High conversion efficiency and high radiation resistance InP solar cells

International Nuclear Information System (INIS)

Yamamoto, Akio; Itoh, Yoshio; Yamaguchi, Masafumi

1987-01-01

The fabrication of homojunction InP solar cells has been studied using impurity thermal diffusion, organometallic vapor phase epitaxy (OMVPE) and liquid phase epitaxy (LPE), and is discussed in this paper. Conversion efficiencies exceeding 20 % (AM1.5) are attained. These are the most efficient results ever reported for InP cells, and are comparable to those for GaAs cells. Electron and γ-ray irradiation studies have also been conducted for fabricated InP cells. The InP cells were found to have higher radiation resistance than GaAs cells. Through these studies, it has been demonstrated that the InP cells have excellent potential for space application. (author)

Interfacial reactions between thin films of zinc and (100) InP

International Nuclear Information System (INIS)

Kaminska, E.; Piotrowska, A.; Barcz, A.; Mizera, E.; Dynowska, E.

1995-01-01

The effects of interaction between thin films of Zn and (100)InP were studied with secondary ion mass spectrometry, X-ray diffraction and transmission electron microscopy. Zn was found to penetrate the native oxide on InP surface during deposition and to form an ohmic contact when deposited on highly doped n-type InP. Heat treatment causes the formation of Zn 3 P 2 phase lattice matched to InP. (author)

Summary of Workshop on InP: Status and Prospects

Science.gov (United States)

Walters, R. J.; Weinberg, I.

1994-01-01

The primary objective of most of the programs in InP solar cells is the development of the most radiation hard solar cell technology. In the workshop, it was generally agreed that the goal is a cell which displays high radiation tolerance in a radiation environment equivalent to a 1 MeV electron fluence of about 10(exp 16)/sq cm. Furthermore, it is desired that the radiation response of the cell be essentially flat out to this fluence - i.e. that the power output of the cell not decrease from its beginning of life (BOL) value in this radiation environment. It was also agreed in the workshop that the manufacturability of InP solar cells needs to be improved. In particular, since InP wafers are relatively dense and brittle, alternative substrates need to be developed. Research on hetero-epitaxial InP cells grown on Si, Ge, and GaAs substrates is currently underway. The ultimate goal is to develop hetero-epitaxial InP solar cells using a cheap, strong, and lightweight substrate.

Study by AES, EELS Spectroscopy of electron Irradiation on InP and InPO4/InP in comparison with Monte Carlo simulation

International Nuclear Information System (INIS)

Lounis, Z; Bouslama, M; Hamaida, K; Abdellaoui, A; Ouerdane, A; Ghaffour, M; Berrouachedi, N; Jardin, C

2012-01-01

We give the great interest to characterise the InP and InPO 4 /InP submitted to electron beam irradiation owing to the Auger Electron Spectroscopy (AES) associated to both methods Electron Energy Loss Spectroscopy (EELS). The incident electron produces breaking of (In-P) chemical bonds. The electron beam even acts to stimulate oxidation of InP surface involving on the top layers. Other, the oxide InPO 4 developed on InP does appear very sensitive to the irradiation due to electron beam shown by the monitoring of EELS spectra recorded versus the irradiated times of the surface. There appears a new oxide thought to be In 2 O 3 . We give the simulation methods Casino (Carlo simulation of electron trajectory in solids) for determination with accuracy the loss energy of backscattered electrons and compared with reports results have been obtained with EELS Spectroscopy. These techniques of spectroscopy alone do not be able to verify the affected depth during interaction process. So, using this simulation method, we determine the interaction of electrons in the matter.

Young's Modulus of Wurtzite and Zinc Blende InP Nanowires.

Science.gov (United States)

Dunaevskiy, Mikhail; Geydt, Pavel; Lähderanta, Erkki; Alekseev, Prokhor; Haggrén, Tuomas; Kakko, Joona-Pekko; Jiang, Hua; Lipsanen, Harri

2017-06-14

The Young's modulus of thin conical InP nanowires with either wurtzite or mixed "zinc blende/wurtzite" structures was measured. It has been shown that the value of Young's modulus obtained for wurtzite InP nanowires (E [0001] = 130 ± 30 GPa) was similar to the theoretically predicted value for the wurtzite InP material (E [0001] = 120 ± 10 GPa). The Young's modulus of mixed "zinc blende/wurtzite" InP nanowires (E [111] = 65 ± 10 GPa) appeared to be 40% less than the theoretically predicted value for the zinc blende InP material (E [111] = 110 GPa). An advanced method for measuring the Young's modulus of thin and flexible nanostructures is proposed. It consists of measuring the flexibility (the inverse of stiffness) profiles 1/k(x) by the scanning probe microscopy with precise control of loading force in nanonewton range followed by simulations.

An ellipsometric measurement of optical properties for InP surfaces

International Nuclear Information System (INIS)

Liu, X.; Irene, E.A.; Hattangady, S.; Fountain, G.

1990-01-01

Several chemical cleaning procedures for InP surfaces have been studied using ellipsometry. The strong influence of cleaning on the optical properties of InP surfaces suggests that the measurements involved the formation of surface films. In order to determine the complex index of refraction for InP, a novel method which employs ellipsometry measurements of a thin nonabsorbing film on a substrate rather than measurements of a bare surface has been explored. From the knowledge of the refractive index for a series of thicknesses of films on a substrate, the complex refractive index value for the substrate can be determined. Plasma enhanced chemical vapor deposition (PECVD) SiO 2 and Si 3 N 4 films on InP have been used for this experiment, and the complex refractive index for InP has been determined to be 3.521 + i0.300 at the wavelength of 632.8 nm

P/N InP solar cells on Ge wafers

Science.gov (United States)

Wojtczuk, Steven; Vernon, Stanley; Burke, Edward A.

1994-01-01

Indium phosphide (InP) P-on-N one-sun solar cells were epitaxially grown using a metalorganic chemical vapor deposition process on germanium (Ge) wafers. The motivation for this work is to replace expensive InP wafers, which are fragile and must be thick and therefore heavy, with less expensive Ge wafers, which are stronger, allowing use of thinner, lighter weight wafers. An intermediate InxGs1-xP grading layer starting as In(0.49)Ga(0.51) at the GaAs-coated Ge wafer surface and ending as InP at the top of the grading layer (backside of the InP cell) was used to attempt to bend some of the threading dislocations generated by lattice-mismatch between the Ge wafer and InP cell so they would be harmlessly confined in this grading layer. The best InP/Ge cell was independently measured by NASA-Lewis with a one-sun 25 C AMO efficiently measured by NASA-Lewis with a one-circuit photocurrent 22.6 mA/sq cm. We believe this is the first published report of an InP cell grown on a Ge wafer. Why get excited over a 9 percent InP/Ge cell? If we look at the cell weight and efficiency, a 9 percent InP cell on an 8 mil Ge wafer has about the same cell power density, 118 W/kg (BOL), as the best InP cell ever made, a 19 percent InP cell on an 18 mil InP wafer, because of the lighter Ge wafer weight. As cell panel materials become lighter, the cell weight becomes more important, and the advantage of lightweight cells to the panel power density becomes more important. In addition, although InP/Ge cells have a low beginning-of-life (BOL) efficiency due to dislocation defects, the InP/Ge cells are very radiation hard (end-of-life power similar to beginning-of-life). We have irradiated an InP/Ge cell with alpha particles to an equivalent fluence of 1.6 x 10(exp 16) 1 MeV electrons/sq cm and the efficiency is still 83 percent of its BOL value. At this fluence level, the power output of these InP/Ge cells matches the GaAs/Ge cell data tabulated in the JPL handbook. Data are presented

Characteristics of withstanding radiation damage of InP crystals and devices

International Nuclear Information System (INIS)

Yamaguchi, Masafumi; Ando, Koshi

1988-01-01

Recently, the authors discovered that the characteristics of with standing radiation damage of InP crystals and devices (solar cells) are superior to those of Si and GaAs crystals and devices. Also the restoration phenomena at room temperature of radiation deterioration and the accelerated anneal phenomena by light irradiation and the injection of other minority, carriers in InP system devices were found. Such excellent characteristics suggested that InP devices are promising for the use in space. In this paper, taking an example of solar cells, the radiation resistance characteristics and their mechanism of InP crystals and devices are reported, based on the results of analysis by deep level transient spectroscopy and others. In InP solar cells, the high efficiency of photoelectric conversion was maintained even in the high dose irradiation of 1 MeV electron beam. As the carrier concentration in InP crystals is higher, they are stronger against radiation. With the increase of carrier concentration, the rate of anneal of radiation deterioration at room temperature increased. The accelerated anneal effect by minority carrier injection was remarkable in n + -p junction cells. The excellent characteristics of InP crystals are due to the formation of Frenkel defects of P and their instability. (K.I.)

Effects of impurities on radiation damage in InP

International Nuclear Information System (INIS)

Yamaguchi, M.; Ando, K.

1986-01-01

Strong impurity effects upon introduction and annealing behavior of radiation-induced defects in InP irradiated with 1-MeV electrons have been found. The main defect center of 0.37-eV hole trap H4 in p-InP, which must be due to a point defect, is annealed even at room temperature. Its annealing rate is found to be proportional to the 2/3 power of the preirradiation carrier concentration in InP. Moreover, the density of the hole trap H5 (E/sub v/+0.52 eV) in p-InP, which must be due to a point defect--impurity complex, increases with increase in the InP carrier concentration. These results suggest that the radiation-induced defects in InP must recover through long-range diffusion mediated by impurity atoms. A model is proposed in which point defects diffuse to sinks through impurities so as to disappear or bind impurities so as to form point defect--impurity complexes. In addition to the long-range diffusion mechanism, the possibility of charge-state effects responsible for the thermal annealing of radiation-induced defects in InP is also discussed

Wurtzite InP nanowire arrays grown by selective area MOCVD

International Nuclear Information System (INIS)

Chu, Hyung-Joon; Stewart, Lawrence; Yeh, Ting-Wei; Dapkus, P.D.

2010-01-01

InP nanowires are a unique material phase because this normally zincblende material forms in the wurtzite crystal structure below a critical diameter owing to the contribution of sidewalls to the total formation energy. This may allow control of the carrier transport and optical properties of InP nanowires for applications such as nano scale transistors, lasers and detectors. In this work, we describe the fabrication of InP nanowire arrays by selective area growth using MOCVD in the diameter range where the wurtzite structure is formed. The spatial growth rate in selective area growth is modeled by a diffusion model for the precursors. The proposed model achieves an average error of 9%. Electron microscopy shows that the grown InP nanowires are in the wurtzite crystal phase with many stacking faults. The threshold diameter of the crystal phase transition of InP nanowires is larger than the thermodynamic estimation. In order to explain this tendency, we propose a surface kinetics model based on a 2 x 2 reconstruction. This model can explain the increased tendency for wurtzite nanowire formation on InP (111)A substrates and the preferred growth direction of binary III-V compound semiconductor nanowires. (copyright 2010 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

Tunable absorption resonances in the ultraviolet for InP nanowire arrays.

Science.gov (United States)

Aghaeipour, Mahtab; Anttu, Nicklas; Nylund, Gustav; Samuelson, Lars; Lehmann, Sebastian; Pistol, Mats-Erik

2014-11-17

The ability to tune the photon absorptance spectrum is an attracting way of tailoring the response of devices like photodetectors and solar cells. Here, we measure the reflectance spectra of InP substrates patterned with arrays of vertically standing InP nanowires. Using the reflectance spectra, we calculate and analyze the corresponding absorptance spectra of the nanowires. We show that we can tune absorption resonances for the nanowire arrays into the ultraviolet by decreasing the diameter of the nanowires. When we compare our measurements with electromagnetic modeling, we generally find good agreement. Interestingly, the remaining differences between modeled and measured spectra are attributed to a crystal-phase dependence in the refractive index of InP. Specifically, we find indication of significant differences in the refractive index between the modeled zinc-blende InP nanowires and the measured wurtzite InP nanowires in the ultraviolet. We believe that such crystal-phase dependent differences in the refractive index affect the possibility to excite optical resonances in the large wavelength range of 345 InP nanowire-based solar cells and photodetectors.

Graphene enhanced field emission from InP nanocrystals.

Science.gov (United States)

Iemmo, L; Di Bartolomeo, A; Giubileo, F; Luongo, G; Passacantando, M; Niu, G; Hatami, F; Skibitzki, O; Schroeder, T

2017-12-08

We report the observation of field emission (FE) from InP nanocrystals (NCs) epitaxially grown on an array of p-Si nanotips. We prove that FE can be enhanced by covering the InP NCs with graphene. The measurements are performed inside a scanning electron microscope chamber with a nano-controlled W-thread used as an anode. We analyze the FE by Fowler-Nordheim theory and find that the field enhancement factor increases monotonically with the spacing between the anode and the cathode. We also show that InP/p-Si junction has a rectifying behavior, while graphene on InP creates an ohmic contact. Understanding the fundamentals of such nanojunctions is key for applications in nanoelectronics.

High Efficiency InP Solar Cells from Low Toxicity Tertiarybutylphosphine

Science.gov (United States)

Hoffman, Richard W., Jr.; Fatemi, Navid S.; Wilt, David M.; Jenkins, Phillip P.; Brinker, David J.; Scheiman, David A.

1994-01-01

Large scale manufacture of phosphide based semiconductor devices by organo-metallic vapor phase epitaxy (OMVPE) typically requires the use of highly toxic phosphine. Advancements in phosphine substitutes have identified tertiarybutylphosphine (TBP) as an excellent precursor for OMVPE of InP. High quality undoped and doped InP films were grown using TBP and trimethylindium. Impurity doped InP films were achieved utilizing diethylzinc and silane for p and n type respectively. 16 percent efficient solar cells under air mass zero, one sun intensity were demonstrated with Voc of 871 mV and fill factor of 82.6 percent. It was shown that TBP could replace phosphine, without adversely affecting device quality, in OMVPE deposition of InP thus significantly reducing toxic gas exposure risk.

Long-Term INP Measurements within the BACCHUS project

Science.gov (United States)

Schrod, Jann; Bingemer, Heinz; Curtius, Joachim

2016-04-01

The European research project BACCHUS (Impact of Biogenic versus Anthropogenic emissions on Clouds and Climate: towards a Holistic UnderStanding) studies the interactions between aerosols, clouds and the climate system, and tries to reconstruct pre-industrial aerosol and cloud conditions from data collected in pristine environments. The number concentration of Ice Nucleating Particles (INP) is an important, yet scarcely known parameter. As a partner of Work package 1 of BACCHUS we began in September 2014 to operate a globally spanned network of four INP sampling stations, which is the first of its kind. The stations are located at the ATTO observatory in the Brazilian Rainforest, the Caribbean Sea (Martinique), the Zeppelin Observatory at Svalbard in the Arctic, and in central Europe (Germany). Samples are collected routinely every day or every few days by electrostatic precipitation of aerosol particles onto Si substrates. The samples are stored in petri-slides, and shipped to our laboratory in Frankfurt, Germany. The number of ice nucleating particles on the substrate is analyzed in the isothermal static diffusion chamber FRIDGE by growing ice on the INP and photographing and counting the crystals. The measurements in the temperature range from -20°C to -30°C and relative humidities of 100-135% (with respect to ice) address primarily the deposition/condensation nucleation modes. Here we present INP and supporting aerosol data from this novel INP network for the first time.

Epitaxial growth of InP on SI by MOCVD

International Nuclear Information System (INIS)

Konushi, F.; Seki, A.; Kudo, J.; Sato, H.; Kakimoto, S.; Fukushima, T.; Kubota, Y.; Koba, M.

1988-01-01

The authors have studied the heteroepitaxial growth of InP on large diameter Si substrates using MOCVD. A new MOCVD system with four inch wafer size capability was utilized in the growth. Single domain InP films have been successfully grown on four inch Si substrates by using a new heterostructure with a thin GaAs intermediate layer. In this paper, the authors describe the crystalline quality and residual stress of InP epilayers, estimated by etch pit density and x-ray diffraction, respectively. The authors also reports on the reduction of EPD by post-growth annealing

Susceptor and proximity rapid thermal annealing of InP

International Nuclear Information System (INIS)

Katz, A.; Pearton, S.J.; Geva, M.

1990-01-01

This paper presents a comparison between the efficiency of InP rapid thermal annealing within two types of SiC-coated graphite susceptors and by using the more conventional proximity approach, in providing degradation-free substrate surface morphology. The superiority of annealing within a susceptor was clearly demonstrated through the evaluation of AuGe contact performance to carbon-implanted InP substrates, which were annealed to activate the implants prior to the metallization. The susceptor annealing provided better protection against edge degradation, slip formation and better surface morphology, due to the elimination of P outdiffusion and pit formation. The two SiC-coated susceptors that were evaluated differ from each other in their geometry. The first type must be charged with the group V species prior to any annealing cycle. Under the optimum charging conditions, effective surface protection was provided only to one anneal (750 degrees C, 10s) of InP before charging was necessary. The second contained reservoirs for provision of the group V element partial pressure, enabled high temperature annealing at the InP without the need for continual recharging of the susceptor. Thus, one has the ability to subsequentially anneal a lot of InP wafers at high temperatures without inducing any surface deterioration

A study of 1/f noise in InP grown by CBE

NARCIS (Netherlands)

Chen, X.Y.; Leijs, M.R.

1996-01-01

The origin of low-frequency noise in InP was studied experimentally by measuring the noise of InP layers grown by chemical beam epitaxy (CBE). Such InP layers are unintentionally doped, but of varying purity and always of n-type conductivity. We performed noise measurements at temperatures from 77

Damage formation and annealing in InP due to swift heavy ions

International Nuclear Information System (INIS)

Kamarou, A.; Wesch, W.; Wendler, E.; Klaumuenzer, S.

2004-01-01

Virgin and pre-damaged InP samples were irradiated at room temperature (RT) and at liquid nitrogen temperature (LNT) with different fluences of 140 MeV Kr, 390 MeV Xe and 600 MeV Au ions. The pre-damaging was performed with 600 keV Ge ions at LNT to obtain different damage levels. The samples were analysed by means of Rutherford backscattering spectrometry (RBS) in random and channelling geometry. A relatively weak damage accumulation in virgin InP and a very significant defect annealing in pre-damaged InP occurs due to 140 MeV Kr irradiation. The damaging of virgin InP with 390 MeV Xe and 600 MeV Au is much more efficient in comparison with that of 140 MeV Kr. Further, annealing of the pre-damaged InP due to 390 MeV Xe irradiation is hardly visible. At LNT InP appears to be much more radiation-resistant to swift heavy ion (SHI) irradiation than at RT. Our results show that during SHI irradiation of InP both damage formation and damage annealing occur simultaneously. Whether the first or the second one plays a more important role depends on the SHI mass and energy

Upper atmosphere research at INPE

International Nuclear Information System (INIS)

Clemesha, B.R.

1984-01-01

Upper atmosphere research at INPE is mainly concerned with the chemistry and dynamics of the stratosphere, upper mesosphere and lower thermosphere, and the middle thermosphere. Experimental work includes lidar observations of the stratospheric aerosol, measurements of stratospheric ozone by Dobson spectrophotometers and by balloon and rocket-borne sondes, lidar measurements of atmospheric sodium, and photometric observations of O, O 2 , OH and Na emissions, including interferrometric measurements of the OI6300 emission for the purpose of determing thermospheric winds and temperature. The airglow observations also include measurements of a number of emissions produced by the precipitation of energetic neutral particles generated by charge exchange in the ring current. Some recent results of INPE's upper atmosphere program are presented. (Author) [pt

Nonepitaxial Thin-Film InP for Scalable and Efficient Photocathodes.

Science.gov (United States)

Hettick, Mark; Zheng, Maxwell; Lin, Yongjing; Sutter-Fella, Carolin M; Ager, Joel W; Javey, Ali

2015-06-18

To date, some of the highest performance photocathodes of a photoelectrochemical (PEC) cell have been shown with single-crystalline p-type InP wafers, exhibiting half-cell solar-to-hydrogen conversion efficiencies of over 14%. However, the high cost of single-crystalline InP wafers may present a challenge for future large-scale industrial deployment. Analogous to solar cells, a thin-film approach could address the cost challenges by utilizing the benefits of the InP material while decreasing the use of expensive materials and processes. Here, we demonstrate this approach, using the newly developed thin-film vapor-liquid-solid (TF-VLS) nonepitaxial growth method combined with an atomic-layer deposition protection process to create thin-film InP photocathodes with large grain size and high performance, in the first reported solar device configuration generated by materials grown with this technique. Current-voltage measurements show a photocurrent (29.4 mA/cm(2)) and onset potential (630 mV) approaching single-crystalline wafers and an overall power conversion efficiency of 11.6%, making TF-VLS InP a promising photocathode for scalable and efficient solar hydrogen generation.

Surface photovoltage study of InP and Zn3P2

International Nuclear Information System (INIS)

Thurgate, S.M.; Lacuesta, T.D.; Huck, N.R.

1989-01-01

The surface photovoltage spectra of InP and Zn 3 P 2 were measured using a Kelvin probe to determine the contact potential difference between the sample and the probe as a function of the wavelength of illuminating light. The features in the resulting spectra were found to be sensitive to ion bombardment. The photovoltage spectra obtained from the InP differed from previously reported SPC spectra in that it showed clear evidence of surface states (or interfacial states) at 0.86 eV and 0.68 eV above VBM. It was found that the features in the spectrum of Zn 3 P 2 were reduced by ion bombardment, but not removed completely, whereas the features in the InP spectra were completely removed. Exposure of the ion bombarded urface to air restored the features of Zn 3 P 2 but only produced a small change in the spectrum of the InP. The loss of features in the InP spectra can be attributed to damage in the substrate caused by the ion bombardment even though the oxide layer was not removed before the damage occurred. Zn 3 P 2 was not as sensitive to ion damage as InP. (orig.)

Spectroscopic determination of valence band parameters in InP

International Nuclear Information System (INIS)

Lewis, R.A.; Lough, B.C.C.

2003-01-01

Full text: The general form of the Hamiltonian for an electron or hole in a semiconductor has been given by Luttinger. The valence band is characterised by three parameters - γ 1 , γ 2 , γ 3 -now commonly known as the Luttinger parameters. Despite many investigations there is still considerable uncertainty regarding the Luttinger parameters of InP. The situation has been reviewed by Hackenberg et al. These authors themselves sought to determine the Luttinger parameters by hot-electron luminescence and discovered that many Luttinger parameter triplets were consistent with their data. We employ a spectroscopic approach to estimating valence-band parameters in InP. Calculations have been made for both the unperturbed energy levels and the energy levels in a magnetic field of acceptor impurities in semiconductors characterised by different Luttinger parameters. We compare our recent experimental data for the transitions associated with the Zn acceptor impurity in InP in magnetic fields up to 30 T to determine the most appropriate set of valence-band parameters for InP

Wafer-scale self-organized InP nanopillars with controlled orientation for photovoltaic devices.

Science.gov (United States)

Sanatinia, Reza; Berrier, Audrey; Dhaka, Veer; Perros, Alexander P; Huhtio, Teppo; Lipsanen, Harri; Anand, Srinivasan

2015-10-16

A unique wafer-scale self-organization process for generation of InP nanopillars is demonstrated, which is based on maskless ion-beam etching (IBE) of InP developed to obtain the nanopillars, where the height, shape, and orientation of the nanopillars can be varied by controlling the processing parameters. The fabricated InP nanopillars exhibit broadband suppression of the reflectance, 'black InP,' a property useful for solar cells. The realization of a conformal p-n junction for carrier collection, in the fabricated solar cells, is achieved by a metalorganic vapor phase epitaxy (MOVPE) overgrowth step on the fabricated pillars. The conformal overgrowth retains the broadband anti-reflection property of the InP nanopillars, indicating the feasibility of this technology for solar cells. Surface passivation of the formed InP nanopillars using sulfur-oleylamine solution resulted in improved solar-cell characteristics. An open-circuit voltage of 0.71 V and an increase of 0.13 V compared to the unpassivated device were achieved.

Carrier thermalization dynamics in single zincblende and wurtzite InP Nanowires.

Science.gov (United States)

Wang, Yuda; Jackson, Howard E; Smith, Leigh M; Burgess, Tim; Paiman, Suriati; Gao, Qiang; Tan, Hark Hoe; Jagadish, Chennupati

2014-12-10

Using transient Rayleigh scattering (TRS) measurements, we obtain photoexcited carrier thermalization dynamics for both zincblende (ZB) and wurtzite (WZ) InP single nanowires (NW) with picosecond resolution. A phenomenological fitting model based on direct band-to-band transition theory is developed to extract the electron-hole-plasma density and temperature as a function of time from TRS measurements of single nanowires, which have complex valence band structures. We find that the thermalization dynamics of hot carriers depends strongly on material (GaAs NW vs InP NW) and less strongly on crystal structure (ZB vs WZ). The thermalization dynamics of ZB and WZ InP NWs are similar. But a comparison of the thermalization dynamics in ZB and WZ InP NWs with ZB GaAs NWs reveals more than an order of magnitude slower relaxation for the InP NWs. We interpret these results as reflecting their distinctive phonon band structures that lead to different hot phonon effects. Knowledge of hot carrier thermalization dynamics is an essential component for effective incorporation of nanowire materials into electronic devices.

Ultrathin film, high specific power InP solar cells on flexible plastic substrates

International Nuclear Information System (INIS)

Shiu, K.-T.; Zimmerman, Jeramy; Wang Hongyu; Forrest, Stephen R.

2009-01-01

We demonstrate ultrathin-film, single-crystal InP Schottky-type solar cells mounted on flexible plastic substrates. The lightly p-doped InP cell is grown epitaxially on an InP substrate via gas source molecular beam epitaxy. The InP substrate is removed via selective chemical wet-etching after the epitaxial layers are cold-welded to a 25 μm thick Kapton sheet, followed by the deposition of an indium tin oxide top contact that forms the Schottky barrier with InP. The power conversion efficiency under 1 sun is 10.2±1.0%, and its specific power is 2.0±0.2 kW/kg. The ultrathin-film solar cells can tolerate both tensile and compressive stress by bending over a <1 cm radius without damage.

TP53inp1 Gene Is Implicated in Early Radiation Response in Human Fibroblast Cells

Directory of Open Access Journals (Sweden)

Nikolett Sándor

2015-10-01

Full Text Available Tumor protein 53-induced nuclear protein-1 (TP53inp1 is expressed by activation via p53 and p73. The purpose of our study was to investigate the role of TP53inp1 in response of fibroblasts to ionizing radiation. γ-Ray radiation dose-dependently induces the expression of TP53inp1 in human immortalized fibroblast (F11hT cells. Stable silencing of TP53inp1 was done via lentiviral transfection of shRNA in F11hT cells. After irradiation the clonogenic survival of TP53inp1 knockdown (F11hT-shTP cells was compared to cells transfected with non-targeting (NT shRNA. Radiation-induced senescence was measured by SA-β-Gal staining and autophagy was detected by Acridine Orange dye and microtubule-associated protein-1 light chain 3 (LC3B immunostaining. The expression of TP53inp1, GDF-15, and CDKN1A and alterations in radiation induced mitochondrial DNA deletions were evaluated by qPCR. TP53inp1 was required for radiation (IR induced maximal elevation of CDKN1A and GDF-15 expressions. Mitochondrial DNA deletions were increased and autophagy was deregulated following irradiation in the absence of TP53inp1. Finally, we showed that silencing of TP53inp1 enhances the radiation sensitivity of fibroblast cells. These data suggest functional roles for TP53inp1 in radiation-induced autophagy and survival. Taken together, we suppose that silencing of TP53inp1 leads radiation induced autophagy impairment and induces accumulation of damaged mitochondria in primary human fibroblasts.

Ultralow surface recombination velocity in InP nanowires probed by terahertz spectroscopy.

Science.gov (United States)

Joyce, Hannah J; Wong-Leung, Jennifer; Yong, Chaw-Keong; Docherty, Callum J; Paiman, Suriati; Gao, Qiang; Tan, H Hoe; Jagadish, Chennupati; Lloyd-Hughes, James; Herz, Laura M; Johnston, Michael B

2012-10-10

Using transient terahertz photoconductivity measurements, we have made noncontact, room temperature measurements of the ultrafast charge carrier dynamics in InP nanowires. InP nanowires exhibited a very long photoconductivity lifetime of over 1 ns, and carrier lifetimes were remarkably insensitive to surface states despite the large nanowire surface area-to-volume ratio. An exceptionally low surface recombination velocity (170 cm/s) was recorded at room temperature. These results suggest that InP nanowires are prime candidates for optoelectronic devices, particularly photovoltaic devices, without the need for surface passivation. We found that the carrier mobility is not limited by nanowire diameter but is strongly limited by the presence of planar crystallographic defects such as stacking faults in these predominantly wurtzite nanowires. These findings show the great potential of very narrow InP nanowires for electronic devices but indicate that improvements in the crystallographic uniformity of InP nanowires will be critical for future nanowire device engineering.

Heterostructures (CaSrBa)F2 on InP for Optoelectronics

National Research Council Canada - National Science Library

Pyshkin, Sergei

1995-01-01

Temperature-reduced MBE growth of group II-a fluorides onto InP( 100) surface as well as optimal cleaning and passivation procedures for InP wafers have been newly developed taking into account exsisting literature data...

All-optical signal processing using InP photonic-crystal nanocavity switches

DEFF Research Database (Denmark)

Yu, Yi; Vukovic, Dragana; Heuck, Mikkel

2014-01-01

In this paper, we present recent progress in experimental characterization of InP photonic-crystal nanocavity switches. Pump-probe measurements on an InP PhC H0 cavity show large-contrast ultrafast switching at low pulse energy. At large pulse energies, a large resonance shift passing across...... for the joint effects of fast carrier diffusion, slow surface and bulk recombination. Utilizin g the simple InP PhC nanocavity structure, we successfully dem onstrate 10-Gb/s RZ- OOK all-optical modulation with low energy consumption....

Unit cell parameters of wurtzite InP nanowires determined by x-ray diffraction.

Science.gov (United States)

Kriegner, D; Wintersberger, E; Kawaguchi, K; Wallentin, J; Borgström, M T; Stangl, J

2011-10-21

High resolution x-ray diffraction is used to study the structural properties of the wurtzite polytype of InP nanowires. Wurtzite InP nanowires are grown by metal-organic vapor phase epitaxy using S-doping. From the evaluation of the Bragg peak position we determine the lattice parameters of the wurtzite InP nanowires. The unit cell dimensions are found to differ from the ones expected from geometric conversion of the cubic bulk InP lattice constant. The atomic distances along the c direction are increased whereas the atomic spacing in the a direction is reduced in comparison to the corresponding distances in the zinc-blende phase. Using core/shell nanowires with a thin core and thick nominally intrinsic shells we are able to determine the lattice parameters of wurtzite InP with a negligible influence of the S-doping due to the much larger volume in the shell. The determined material properties will enable the ab initio calculation of electronic and optical properties of wurtzite InP nanowires.

Radiation effects in heteroepitaxial InP solar cells

Science.gov (United States)

Weinberg, I.; Curtis, H. B.; Swartz, C. K.; Brinker, D. J.; Vargas-Aburto, C.

1993-01-01

Heteroepitaxial InP solar cells, with GaAs substrates, were irradiated by 0.5 and 3 MeV protons and their performance, temperature dependency, and carrier removal rates determined as a function of fluence. The radiation resistance of the present cells was significantly greater than that of non-heteroepitaxial InP cells at both proton energies. A clear difference in the temperature dependency of V(sub oc), was observed between heteroepitaxial and homoepitaxial InP cells. The analytically predicted dependence of dV(sub oc)/dT on Voc was confirmed by the fluence dependence of these quantities. Carrier removal was observed to increase with decreasing proton energy. The results obtained for performance and temperature dependency were attributed to the high dislocation densities present in the heteroepitaxial cells while the energy dependence of carrier removal was attributed to the energy dependence of proton range.

Different growth regimes in InP nanowire growth mediated by Ag nanoparticles.

Science.gov (United States)

Oliveira, D S; Zavarize, M; Tizei, L H G; Walls, M; Ospina, C A; Iikawa, F; Ugarte, D; Cotta, M A

2017-12-15

We report on the existence of two different regimes in one-step Ag-seeded InP nanowire growth. The vapor-liquid-solid-mechanism is present at larger In precursor flows and temperatures, ∼500 °C, yielding high aspect ratio and pure wurtzite InP nanowires with a semi-spherical metal particle at the thin apex. Periodic diameter oscillations can be achieved under extreme In supersaturations at this temperature range, showing the presence of a liquid catalyst. However, under lower temperatures and In precursor flows, large diameter InP nanowires with mixed wurtzite/zincblende segments are obtained, similarly to In-assisted growth. Chemical composition analysis suggest that In-rich droplet formation is catalyzed at the substrate surface via Ag nanoparticles; this process might be facilitated by the sulfur contamination detected in these nanoparticles. Furthermore, part of the original Ag nanoparticle remains solid and is embedded inside the actual catalyst, providing an in situ method to switch growth mechanisms upon changing In precursor flow. Nevertheless, our Ag-seeded InP nanowires exhibit overall optical emission spectra consistent with the observed structural properties and similar to Au-catalyzed InP nanowires. We thus show that Ag nanoparticles may be a suitable replacement for Au in InP nanowire growth.

Photoacoustic investigation of doped InP using open cell configuration

NARCIS (Netherlands)

George, S.D.; Vallabhan, C.P.G.; Heck, M.J.R.; Radhakrishnan, P.; Nampoori, V.P.N.

2002-01-01

An open cell photoacoustic (PA) configuration was employed to evaluate the thermal diffusivity of intrinsic InP as well as InP doped with tin and iron. Thermal diffusivity data were evaluated from variation of phase of PA signal as a function of modulation frequency. In doped samples, we observe a

Control of persistent photoconductivity in nanostructured InP through morphology design

International Nuclear Information System (INIS)

Monaico, Ed; Postolache, V; Borodin, E; Lupan, O; Tiginyanu, I M; Ursaki, V V; Adelung, R; Nielsch, K

2015-01-01

In this paper, we show that long-duration-photoconductivity decay (LDPCD) and persistent photoconductivity (PPC) in porous InP structures fabricated by anodic etching of bulk substrates can be controlled through the modification of the sample morphology. Particularly, the PPC inherent at low temperatures to porous InP layers with the thickness of skeleton walls comparable with pore diameters is quenched in structures consisting of ultrathin walls produced at high anodization voltages. The relaxation of photoconductivity in bulk InP substrates, porous layers, and utrathin membranes is investigated as a function of temperature and excitation power density. The obtained results suggest that PPC in porous InP layers is due to porosity induced potential barriers which hinder the recombination of photoexcited carriers, while the photoconductivity relaxation processes in ultrathin membranes are governed by surface states. (paper)

Optical phonon modes of wurtzite InP

Science.gov (United States)

Gadret, E. G.; de Lima, M. M.; Madureira, J. R.; Chiaramonte, T.; Cotta, M. A.; Iikawa, F.; Cantarero, A.

2013-03-01

Optical vibration modes of InP nanowires in the wurtzite phase were investigated by Raman scattering spectroscopy. The wires were grown along the [0001] axis by the vapor-liquid-solid method. The A1(TO), E2h, and E1(TO) phonon modes of the wurtzite symmetry were identified by using light linearly polarized along different directions in backscattering configuration. Additionally, forbidden longitudinal optical modes have also been observed. Furthermore, by applying an extended 11-parameter rigid-ion model, the complete dispersion relations of InP in the wurtzite phase have been calculated, showing a good agreement with the Raman experimental data.

The AREVA integrated and sustainable concept of fatigue design, monitoring and re-assessment; AREVA FATIGUE CONCEPT - ein geschlossenes Konzept zur Verfolgung und Optimierung der auf Ermuedung basierenden Schaedigungseffekte von thermisch und mechanisch beanspruchten Kraftwerksbauteilen

Energy Technology Data Exchange (ETDEWEB)

Begholz, Steffen; Rudolph, Juergen [AREVA NP GmbH, Erlangen (Germany)

2008-07-01

Prevention of fatigue damage of components is an important topic with respect to safety and availability of a nuclear power plant. The issue of fatigue monitoring should be of primary interest throughout service life. Based on the changing general framework, i.e. planning of new plants with a projected lifetime of 60 years and the lifetime extension of existing plants AREVA is focussing R and D activities on improved detection methods. Primary objective is the realistic determination of the actual usage level of reactor components. The fatigue monitoring is supposed to enhance cost optimization and minimize inspection frequency. Fatigue monitoring should be implemented at the beginning of start-up period since the high loads during this phase introduce a significant contribution to the usage level. AREVA recommends the use of the FAMOS (fatigue monitoring system) for the assessment of the realistic transient loads and the data processing with respect to fatigue evaluation. Every 10 years the actual usage levels should be evaluated in detail according to the standards, based on measured load data. The fatigue evaluation is usually performed using finite element analyses taking into account the transient temperature loads at the component, dependent on the component demands based on elastic or elasto-plastic material behaviour. Potential problematic areas can be identified reliably. Direct measurement of fatigue damage, refined analysis concepts (short crack fracture mechanics, and ratcheting simulation) are supposed to support the concept. [German] Die Vermeidung von Ermuedungsschaeden an Komponenten der nuklearen Kraftwerkstechnik ist ein wichtiges Thema in Hinblick auf die Aufrechterhaltung der Anlagensicherheit sowie auf die Erhoehung der Verfuegbarkeit. Das Thema Ermuedungsueberwachung sollte somit waehrend der gesamten Laufzeit eines Kraftwerkes mit hoher Aufmerksamkeit verfolgt werden. Vor diesem Hintergrund und den sich aendernden Rahmenbedingungen, wie z

Synthesis of colloidal InP nanocrystal quantum dots

International Nuclear Information System (INIS)

Sirbu, L.; Gutul, T.; Todosiciuc, A.; Danila, M.; Muller, R.; Sarua, A.; Webster, R.; Tiginyanu, I.M.; Ursaki, V.

2013-01-01

InP nano dots with the diameter of 4-10 nm were synthesized using sol-gel method. The nano dot dimensions were obtained using TEM, and we found the d(111) spacing to be 0.328 nm which agrees within 3% of the literature value. Prepared nanoparticles where characterized then by Raman spectroscopy and Xray diffraction. Performed measurements confirm good crystalline quality of obtained InP particles, which can be used as a basis for THz emitters, LED, and OLED displays. (authors)

Influence of combustion air guidance on solid matter burnout and on pollutant emissions in grid incinerators; Einfluss der Verbrennungsluftfuehrung auf den Feststoffabbrand und auf das Schadstoffverhalten bei der Hausmuellverbrennung auf dem Rost

Energy Technology Data Exchange (ETDEWEB)

Hunsinger, H.; Seifert, H. [Forschungszentrum Karlsruhe GmbH Technik und Umwelt (Germany). Inst. fuer Technische Chemie

2003-07-01

The contribution investigates the influence of combustion air guidance strategies on process optimisation. In particular, it is investigated if efficient burnout correlates with low pollutant emissions and if the effects are similar or contrary for the different process goals. (orig.) [German] Der Einfluss von Brennstoffqualitaeten, der Ofengeometrie sowie von Feuerungsbetriebsparametern auf die Bildungsraten von Schadstoffen wie PCDD/F und NO{sub x} und auf die Transferraten von Schwermetallen, Chlor- und Schwefelverbindungen aus dem Brennstoffbett ins Rauchgas ist zur Zeit nur ungenuegend bekannt. Besonders die Frage, wie die primaere Forderung nach moeglichst vollstaendigem Ausbrand von Rauchgas und Rostasche mit weiteren Zielen wie niedrige Bildungsraten von Schadstoffen und Inertisierung der Rostasche korreliert, zeigt den Bedarf umfassender systematischer Untersuchungen auf. Im Rahmen dieses Beitrags soll als Beispiel fuer Modifikationen des Verbrennungsprozesses der Einfluss unterschiedlicher Verbrennungsluftfuehrungen auf die aufgefuehrten Optimierungsziele vorgestellt werden. Insbesondere soll der Frage nachgegangen werden, ob ein effizienter Ausbrand mit niedrigen Schadstoffbildungsraten korreliert und ob zwischen den Zielgroessen gleiche oder kontraere Wirkungen auftreten. (orig.)

InP quantum dots embedded in GaP: Optical properties and carrier dynamics

International Nuclear Information System (INIS)

Hatami, F.; Masselink, W.T.; Schrottke, L.; Tomm, J.W.; Talalaev, V.; Kristukat, C.; Goni, A.R.

2003-01-01

The optical emission and dynamics of carriers in Stranski-Krastanow self-organized InP quantum dots embedded in a GaP matrix are studied. InP deposited on GaP (001) using gas-source molecular-beam epitaxy forms quantum dots for InP coverage greater than 1.8 monolayers. Strong photoluminescence from the quantum dots is observed up to room temperature at about 2 eV; photoluminescence from the two-dimensional InP wetting layer is measured at about 2.2 eV. Modeling based on the 'model-solid theory' indicates that the band alignment for the InP quantum dots is direct and type I. Furthermore, low-temperature time-resolved photoluminescence measurements indicate that the carrier lifetime in the quantum dots is about 2 ns, typical for type-I quantum dots. Pressure-dependent photoluminescence measurements provide further evidence for a type-I band alignment for InP/GaP quantum dots at normal pressure with the GaP X states lying about 30 meV higher than the Γ states in the InP quantum dots, but indicate that they become type II under hydrostatic pressures of about 1.2 GPa

1.0 MeV irradiation of OHMIC, MS, MIS contacts to InP

International Nuclear Information System (INIS)

Warren, C.E.; Wagner, B.F.; Anderson, W.A.

1986-01-01

The radiation effects of 1.0 MeV electrons with a dose of 10/sup 15/cm/sup -2/ to MS and MIS Schottky diodes on InP have been compared to the radiation effects of MIS diodes on GaAs and Si. The radiation effects to ohmic contacts were also investigated. The metal for the diodes on the InP was gold. Au/Ti/Al was used for the GaAs diodes and Cr for the silicon diodes. Oxide layers on InP were grown by anodization in 0.1 N KOH. Oxides to GaAs and Si were grown thermally. Ohmic contacts to InP were formed using AuGe/Ni and AuSn alloys, followed by annealing in N/sub 2//H/sub 2/ (85%/15%). Metal Semiconductor diodes on InP were found to be at least sensitive to the irradiation. The InP MS and MIS diodes showed only small changes in the current voltage (I-V) characteristic, whereas the GaAs and Si devices showed a decrease in reverse current after irradiation. The ohmic contact resistance was increased by a factor of 2 to 5 after irradiation

Single n+-i-n+ InP nanowires for highly sensitive terahertz detection.

Science.gov (United States)

Peng, Kun; Parkinson, Patrick; Gao, Qian; Boland, Jessica L; Li, Ziyuan; Wang, Fan; Mokkapati, Sudha; Fu, Lan; Johnston, Michael B; Tan, Hark Hoe; Jagadish, Chennupati

2017-03-24

Developing single-nanowire terahertz (THz) electronics and employing them as sub-wavelength components for highly-integrated THz time-domain spectroscopy (THz-TDS) applications is a promising approach to achieve future low-cost, highly integrable and high-resolution THz tools, which are desirable in many areas spanning from security, industry, environmental monitoring and medical diagnostics to fundamental science. In this work, we present the design and growth of n + -i-n + InP nanowires. The axial doping profile of the n + -i-n + InP nanowires has been calibrated and characterized using combined optical and electrical approaches to achieve nanowire devices with low contact resistances, on which the highly-sensitive InP single-nanowire photoconductive THz detectors have been demonstrated. While the n + -i-n + InP nanowire detector has a only pA-level response current, it has a 2.5 times improved signal-to-noise ratio compared with the undoped InP nanowire detector and is comparable to traditional bulk THz detectors. This performance indicates a promising path to nanowire-based THz electronics for future commercial applications.

InP Heterojunction Bipolar Transistor Amplifiers to 255 GHz

Science.gov (United States)

Radisic, Vesna; Sawdai, Donald; Scott, Dennis; Deal, William; Dang, Linh; Li, Danny; Cavus, Abdullah; To, Richard; Lai, Richard

2009-01-01

Two single-stage InP heterojunction bipolar transistor (HBT) amplifiers operate at 184 and 255 GHz, using Northrop Grumman Corporation s InP HBT MMIC (monolithic microwave integrated circuit) technology. At the time of this reporting, these are reported to be the highest HBT amplifiers ever created. The purpose of the amplifier design is to evaluate the technology capability for high-frequency designs and verify the model for future development work.

Porous InP as piezoelectric matrix material in 1-3 magnetoelectric composite sensors

International Nuclear Information System (INIS)

Gerngross, M.-D.; Leisner, M.; Carstensen, J.; Foell, H.

2011-01-01

This work shows the results of the fabrication of semi-insulating piezoelectric porous InP structures by electrochemical etching and subsequent purely chemical post-etching in an isotropic HF, HNO 3 , EtOH and HAc containing electrolyte. The piezoelectric modulus d 14 of porous InP is measured to around |60| pm / V, which larger by a factor of 30 compared to bulk InP.

The temperature dependence of 1/f noise in InP

NARCIS (Netherlands)

Chen, X.Y.; Hooge, F.N.; Leijs, M.R.

1997-01-01

Noise spectra were measured on CBE grown InP samples in the frequency range from 1 Hz to 104 kHz at temperatures from 77 to 500 K. The experimental results show that llfnoise stems from the lattice scattering. The 1/f noise in InP is well characterised by a parameter CtL~,, in this temperature

Electrochemical formation of InP porous nanostructures and its application to amperometric chemical sensors

International Nuclear Information System (INIS)

Sato, Taketomo; Mizohata, Akinori; Fujino, Toshiyuki; Hashizume, Tamotsu

2008-01-01

In this paper, we report the electrochemical formation of the InP porous nanostructures and their feasibility for the application to the amperometric chemical sensors. Our two step electrochemical process consists of the pore formation on a (001) n-type InP substrate and the subsequent etching of pore walls caused by changing the polarity of the InP electrode in a HCl-based electrolyte. By applying the anodic bias to the InP electrode, the high-density array of uniform nanopores was formed on the surface. Next, the cathodic bias was applied to the porous sample to reduce the wall thickness by cathodic decomposition of InP, where the thickness of InP nanowall decreased uniformly along the entire depth of the porous layer. From the amperometric measurements of the porous electrode, it was found that the electrocatalytic activity was much higher than that of the planar electrode. Furthermore, the current sensitivity for the H 2 O 2 detection was much enhanced after the cathodic decomposition process. The InP porous nanostructure formed by the present process is one of the promising structures for the application to the semiconductor-based bio/chemical sensors. (copyright 2008 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

An improved large signal model of InP HEMTs

Science.gov (United States)

Li, Tianhao; Li, Wenjun; Liu, Jun

2018-05-01

An improved large signal model for InP HEMTs is proposed in this paper. The channel current and charge model equations are constructed based on the Angelov model equations. Both the equations for channel current and gate charge models were all continuous and high order drivable, and the proposed gate charge model satisfied the charge conservation. For the strong leakage induced barrier reduction effect of InP HEMTs, the Angelov current model equations are improved. The channel current model could fit DC performance of devices. A 2 × 25 μm × 70 nm InP HEMT device is used to demonstrate the extraction and validation of the model, in which the model has predicted the DC I–V, C–V and bias related S parameters accurately. Project supported by the National Natural Science Foundation of China (No. 61331006).

Workshop on Heteroepitaxial InP Solar Cells

Science.gov (United States)

Weinberg, I.; Walters, R. W.

1993-01-01

In a generic sense, the justification for any sort of InP solar cell research applies, i.e. to take advantage of the inherently high radiation resistance and efficiency of InP solar cells. To be more specific, the approach is justified by its potential for significant cost reduction and the availability of greatly increased cell area afforded by substrates such as Si and Ge. The use of substrates, such as the latter two, would result in increased ruggedness, ease of handling, and improved manufacturability. The use of more rugged substrates would lead to a greatly increased capability for cell thinning leading to the desirable feature of reduced array weight.

Wafer-scale self-organized InP nanopillars with controlled orientation for photovoltaic devices

International Nuclear Information System (INIS)

Sanatinia, Reza; Berrier, Audrey; Anand, Srinivasan; Dhaka, Veer; Perros, Alexander P; Huhtio, Teppo; Lipsanen, Harri

2015-01-01

A unique wafer-scale self-organization process for generation of InP nanopillars is demonstrated, which is based on maskless ion-beam etching (IBE) of InP developed to obtain the nanopillars, where the height, shape, and orientation of the nanopillars can be varied by controlling the processing parameters. The fabricated InP nanopillars exhibit broadband suppression of the reflectance, ‘black InP,’ a property useful for solar cells. The realization of a conformal p–n junction for carrier collection, in the fabricated solar cells, is achieved by a metalorganic vapor phase epitaxy (MOVPE) overgrowth step on the fabricated pillars. The conformal overgrowth retains the broadband anti-reflection property of the InP nanopillars, indicating the feasibility of this technology for solar cells. Surface passivation of the formed InP nanopillars using sulfur-oleylamine solution resulted in improved solar-cell characteristics. An open-circuit voltage of 0.71 V and an increase of 0.13 V compared to the unpassivated device were achieved. (paper)

Wurtzite-Phased InP Micropillars Grown on Silicon with Low Surface Recombination Velocity.

Science.gov (United States)

Li, Kun; Ng, Kar Wei; Tran, Thai-Truong D; Sun, Hao; Lu, Fanglu; Chang-Hasnain, Connie J

2015-11-11

The direct growth of III-V nanostructures on silicon has shown great promise in the integration of optoelectronics with silicon-based technologies. Our previous work showed that scaling up nanostructures to microsize while maintaining high quality heterogeneous integration opens a pathway toward a complete photonic integrated circuit and high-efficiency cost-effective solar cells. In this paper, we present a thorough material study of novel metastable InP micropillars monolithically grown on silicon, focusing on two enabling aspects of this technology-the stress relaxation mechanism at the heterogeneous interface and the microstructure surface quality. Aberration-corrected transmission electron microscopy studies show that InP grows directly on silicon without any amorphous layer in between. A set of periodic dislocations was found at the heterointerface, relaxing the 8% lattice mismatch between InP and Si. Single crystalline InP therefore can grow on top of the fully relaxed template, yielding high-quality micropillars with diameters expanding beyond 1 μm. An interesting power-dependence trend of carrier recombination lifetimes was captured for these InP micropillars at room temperature, for the first time for micro/nanostructures. By simply combining internal quantum efficiency with carrier lifetime, we revealed the recombination dynamics of nonradiative and radiative portions separately. A very low surface recombination velocity of 1.1 × 10(3) cm/sec was obtained. In addition, we experimentally estimated the radiative recombination B coefficient of 2.0 × 10(-10) cm(3)/sec for pure wurtzite-phased InP. These values are comparable with those obtained from InP bulk. Exceeding the limits of conventional nanowires, our InP micropillars combine the strengths of both nanostructures and bulk materials and will provide an avenue in heterogeneous integration of III-V semiconductor materials onto silicon platforms.

Oxidation of InP nanowires: a first principles molecular dynamics study.

Science.gov (United States)

Berwanger, Mailing; Schoenhalz, Aline L; Dos Santos, Cláudia L; Piquini, Paulo

2016-11-16

InP nanowires are candidates for optoelectronic applications, and as protective capping layers of III-V core-shell nanowires. Their surfaces are oxidized under ambient conditions which affects the nanowire physical properties. The majority of theoretical studies of InP nanowires, however, do not take into account the oxide layer at their surfaces. In this work we use first principles molecular dynamics electronic structure calculations to study the first steps in the oxidation process of a non-saturated InP nanowire surface as well as the properties of an already oxidized surface of an InP nanowire. Our calculations show that the O 2 molecules dissociate through several mechanisms, resulting in incorporation of O atoms into the surface layers. The results confirm the experimental observation that the oxidized layers become amorphous but the non-oxidized core layers remain crystalline. Oxygen related bonds at the oxidized layers introduce defective levels at the band gap region, with greater contributions from defects involving In-O and P-O bonds.

Einfluss verschiedener Traubenmost-Konzentrierungsverfahren auf die Weinqualität

OpenAIRE

Weber, Dirk

2006-01-01

Auf internationaler Ebene wurden seit längerer Zeit Bedeutung und Konsequenzen einer Zulassung „neuer önologischer Verfahren“ erörtert. Seit 1998 führte man diese Diskussion auch in Deutschland. Diese neuen Verfahren setzten internationale Wettbewerber zum Teil bereits erfolgreich ein. Um auf dem internationalen Markt mit diesen Weinen konkurrieren zu können und im Rahmen der Chancen-Gleichheit, kam in der deutschen Weinbranche der Wunsch auf, diese Verfahren auch hier zuzulassen. Eines diese...

A high-coverage nanoparticle monolayer for the fabrication of a subwavelength structure on InP substrates.

Science.gov (United States)

Kim, Dae-Seon; Park, Min-Su; Jang, Jae-Hyung

2011-08-01

Subwavelength structures (SWSs) were fabricated on the Indium Phosphide (InP) substrate by utilizing the confined convective self-assembly (CCSA) method followed by reactive ion etching (RIE). The surface condition of the InP substrate was changed by depositing a 30-nm-thick SiO2 layer and subsequently treating the surface with O2 plasma to achieve better surface coverage. The surface coverage of nanoparticle monolayer reached 90% by using O2 plasma-treated SiO2/InP substrate among three kinds of starting substrates such as the bare InP, SiO2/InP and O2 plasma-treated SiO2/InP substrate. A nanoparticle monolayer consisting of polystyrene spheres with diameter of 300 nm was used as an etch mask for transferring a two-dimensional periodic pattern onto the InP substrate. The fabricated conical SWS with an aspect ratio of 1.25 on the O2 plasma-treated SiO2/InP substrate exhibited the lowest reflectance. The average reflectance of the conical SWS was 5.84% in a spectral range between 200 and 900 nm under the normal incident angle.

Tumor protein 53-induced nuclear protein 1 (TP53INP1 enhances p53 function and represses tumorigenesis

Directory of Open Access Journals (Sweden)

Jeyran eShahbazi

2013-05-01

Full Text Available Tumor protein 53-induced nuclear protein 1 (TP53INP1 is a stress-induced p53 target gene whose expression is modulated by transcription factors such as p53, p73 and E2F1. TP53INP1 gene encodes two isoforms of TP53INP1 proteins, TP53INP1α and TP53INP1β, both of which appear to be key elements in p53 function. When associated with homeodomain-interacting protein kinase-2 (HIPK2, TP53INP1 phosphorylates p53 protein at Serine 46, enhances p53 protein stability and its transcriptional activity, leading to transcriptional activation of p53 target genes such as p21, PIG-3 and MDM2, cell growth arrest and apoptosis upon DNA damage stress. The anti-proliferative and pro-apoptotic activities of TP53INP1 indicate that TP53INP1 has an important role in cellular homeostasis and DNA damage response. Deficiency in TP53INP1 expression results in increased tumorigenesis; while TP53INP1 expression is repressed during early stages of cancer by factors such as miR-155. This review aims to summarize the roles of TP53INP1 in blocking tumor progression through p53-dependant and p53-independent pathways, as well as the elements which repress TP53INP1 expression, hence highlighting its potential as a therapeutic target in cancer treatment.

Amorphization and recrystallization in MeV ion implanted InP crystals

International Nuclear Information System (INIS)

Xiong, F.; Nieh, C.W.; Jamieson, D.N.; Vreeland, T. Jr.; Tombrello, T.A.

1988-01-01

A comprehensive study of MeV- 15 N-ion-implanted InP by a variety of analytical techniques has revealed the physical processes involved in MeV ion implantation into III-V compound semiconductors as well as the influence of post-implantation annealing. It provides a coherent picture of implant distribution, structural transition, crystalline damage, and lattice strain in InP crystals induced by ion implantation and thermal annealing. The experimental results from the different measurements are summarized in this report. Mechanisms of amorphization by implantation and recrystallization through annealing in MeV-ion-implanted InP are proposed and discussed in light of the results obtained

Systems and methods for advanced ultra-high-performance InP solar cells

Science.gov (United States)

Wanlass, Mark

2017-03-07

Systems and Methods for Advanced Ultra-High-Performance InP Solar Cells are provided. In one embodiment, an InP photovoltaic device comprises: a p-n junction absorber layer comprising at least one InP layer; a front surface confinement layer; and a back surface confinement layer; wherein either the front surface confinement layer or the back surface confinement layer forms part of a High-Low (HL) doping architecture; and wherein either the front surface confinement layer or the back surface confinement layer forms part of a heterointerface system architecture.

Channeling study of laser-induced defect generation in InP and InAs

International Nuclear Information System (INIS)

Burdel', K.K.; Kashkarov, P.K.; Timoshenko, V.Yu.; Chechenin, N.G.

1992-01-01

Damage production in InP and InAs single crystals induced by a ruby-laser pulse irradiation with τ p =20 ms in the energy density region W=0.05-1.0 J/cm 2 is studied by the channeling and Rutherford backscattering techniques. The defect generation threshold was determined to be equal to 0.2 J/cm 2 and 0.55 J/cm 2 for InP and InAs crystals, respectively. Stoichiometric defects in InP crystals were observed at W>=0.5 J/cm 2 . The temperature fields in InP and InAs under laser irradiation were calculated. The experimental observations are considered as a result of a selective evaporation of the components from the melt

Enhanced light output from the nano-patterned InP semiconductor substrate through the nanoporous alumina mask.

Science.gov (United States)

Jung, Mi; Kim, Jae Hun; Lee, Seok; Jang, Byung Jin; Lee, Woo Young; Oh, Yoo-Mi; Park, Sun-Woo; Woo, Deokha

2012-07-01

A significant enhancement in the light output from nano-patterned InP substrate covered with a nanoporous alumina mask was observed. A uniform nanohole array on an InP semiconductor substrate was fabricated by inductively coupled plasma reactive ion etching (ICP-RIE), using the nanoporous alumina mask as a shadow mask. The light output property of the semiconductor substrate was investigated via photoluminescence (PL) intensity measurement. The InP substrate with a nanohole array showed a more enhanced PL intensity compared with the raw InP substrate without a nanohole structure. After ICP-RIE etching, the light output from the nanoporous InP substrate covered with a nanoporous alumina mask showed fourfold enhanced PL intensity compared with the raw InP substrate. These results can be used as a prospective method for increasing the light output efficiency of optoelectronic devices.

Low temperature synthesis of InP nanocrystals

International Nuclear Information System (INIS)

Ung Thi Dieu Thuy; Tran Thi Thuong Huyen; Nguyen Quang Liem; Reiss, Peter

2008-01-01

We present a simple method for the chemical synthesis of InP nanocrystals, which comprises several advantages: (i) the use of simple reagents, namely InCl 3 .4H 2 O and yellow P as the In and P precursors, respectively, and NaBH 4 as the reducing agent in a mixed solvent of ethanol and toluene; (ii) a short reaction time (1-5 h) and low temperature (<75 deg. C); (iii) a high reaction yield approaching 100%. InP NCs in the zinc-blende structure have been obtained as confirmed by powder X-ray diffraction and Raman scattering measurements. Their mean size of 4 nm has been determined by transmission electron microscopy, Raman scattering and absorption spectroscopy

Efficiency enhancement of InP nanowire solar cells by surface cleaning

NARCIS (Netherlands)

Cui, Y.; Wang, J.; Plissard, S.R.; Cavalli, A.; Vu, T.T.T.; Veldhoven, van P.J.; Gao, L.; Trainor, M.J.; Verheijen, M.A.; Haverkort, J.E.M.; Bakkers, E.P.A.M.

2013-01-01

We demonstrate an efficiency enhancement of an InP nanowire (NW) axial p–n junction solar cell by cleaning the NW surface. NW arrays were grown with in situ HCl etching on an InP substrate patterned by nanoimprint lithography, and the NWs surfaces were cleaned after growth by piranha etching. We

Low energy Ar ion bombardment damage of Si, GaAs, and InP surfaces

International Nuclear Information System (INIS)

Williams, R.S.

1982-01-01

Argon bombardment damage to (100) surfaces of Si, GaAs, and InP for sputter ion-gun potentials of 1, 2, and 3 kilovolts was studied using Rutherford backscattering. Initial damage rates and saturation damage levels were determined. Bombardment damage sensitivity increased for the sequence Si, GaAs, and InP. Saturation damage levels for Si and GaAs correspond reasonably to LSS projected range plus standard deviation estimates; damage to InP exceeded this level significantly. For an ion-gun potential of 3 keV, the initial sputter yield of P from an InP surface exceeded the sputter yield of In by four atoms per incident Ar projectile. (author)

Carrier concentration effects on radiation damage in InP

International Nuclear Information System (INIS)

Yamaguchi, M.; Ando, K.; Uemura, C.

1984-01-01

Minority carrier diffusion length and carrier concentration studies have been made on room-temperature 1-MeV electron irradiated liquid-encapsulated Czochralski grown Zn-doped p-InP. The damage rate for the diffusion length and carrier removal rate due to irradiation have been found to strongly decrease with an increase in the carrier concentration in InP. These phenomena suggest that the induced defects interact with impurities in InP. A preliminary study on the annealing behavior has also been performed

Comparative modeling of InP solar cell structures

Science.gov (United States)

Jain, R. K.; Weinberg, I.; Flood, D. J.

1991-01-01

The comparative modeling of p(+)n and n(+)p indium phosphide solar cell structures is studied using a numerical program PC-1D. The optimal design study has predicted that the p(+)n structure offers improved cell efficiencies as compared to n(+)p structure, due to higher open-circuit voltage. The various cell material and process parameters to achieve the maximum cell efficiencies are reported. The effect of some of the cell parameters on InP cell I-V characteristics was studied. The available radiation resistance data on n(+)p and p(+)p InP solar cells are also critically discussed.

Wirksamkeit der Hypnose auf Schmerzen bei Erwachsenen: systematische Literaturreview

OpenAIRE

Pfaffen, Céline; Z`Brun-Schnyder, Silvia

2018-01-01

Das Ziel dieser systematischen Literaturreview ist es, die Wirksamkeit der Hypnose auf Schmerzen bei Erwachsenen zu überprüfen. Daraus ergibt sich folgende Forschungsfrage: "Wie wird die Wirksamkeit der Hypnose auf Schmerzen bei Erwachsenen in der wissenschaftlichen Literatur beschrieben?"

Photoluminescence study of as-grown vertically standing wurtzite InP nanowire ensembles.

Science.gov (United States)

Iqbal, Azhar; Beech, Jason P; Anttu, Nicklas; Pistol, Mats-Erik; Samuelson, Lars; Borgström, Magnus T; Yartsev, Arkady

2013-03-22

We demonstrate a method that enables the study of photoluminescence of as-grown nanowires on a native substrate by non-destructively suppressing the contribution of substrate photoluminescence. This is achieved by using polarized photo-excitation and photoluminescence and by making an appropriate choice of incident angle of both excitation beam and photoluminescence collection direction. Using TE-polarized excitation at a wavelength of 488 nm at an incident angle of ∼70° we suppress the InP substrate photoluminescence relative to that of the InP nanowires by about 80 times. Consequently, the photoluminescence originating from the nanowires becomes comparable to and easily distinguishable from the substrate photoluminescence. The measured photoluminescence, which peaks at photon energies of ∼1.35 eV and ∼1.49 eV, corresponds to the InP substrate with zinc-blende crystal structure and to the InP nanowires with wurtzite crystal structure, respectively. The photoluminescence quantum yield of the nanowires was found to be ∼20 times lower than that of the InP substrate. The nanowires, grown vertically in a random ensemble, neither exhibit substantial emission polarization selectivity to the axis of the nanowires nor follow excitation polarization preferences observed previously for a single nanowire.

Die drei Vorführungen eines geheimen Dokumentarfilms. Eine kritische Revision von Theresienstadt

Directory of Open Access Journals (Sweden)

Natascha Drubek

2017-04-01

Full Text Available Dieser Artikel liefert auf der Grundlage einer gründlichen Lektüre von tschechischen, deutschen und französischen Quellen eine neue Perspektive auf das Filmmaterial, das im Ghetto von Theresienstadt gedreht wurde und unter den Titeln Ghetto Theresienstadt, Theresienstadt 1942 und Theresienstadt. Ein Dokumentarfilm aus dem jüdischen Siedlungsgebiet bzw. auch als Der Führer schenkt den Juden eine Stadt bekannt ist.  In einer Revision des allgemeinen Konsensus der letzten zwei Jahrzehnte argumentiert der Artikel, dass die verschiedenen Filmaufnahmen zwischen 1942 und 1945 ein zusammenhängendes Filmprojekt bilden. Die Autorin schlägt Korrekturen der filmographischen Daten vor, wie etwa die Einbindung des letzten „Jewish Elder“ des Ghettos, Benjamin Murmelstein, als Ko-Autor des Scripts. Eine Rekonstruktion des Datums, des Zeitpunkts und des Orts der ersten offiziellen Vorführung des Films für Delegierte des Komitees des Internationalen Roten Kreuzes wird durch eine komparative Untersuchung von verschiedenen Quellen und auf Textanalyse basierenden Ausschlussverfahren möglich. Bisherige Auffassungen des beabsichtigten Effekts und der Zielgruppe des Films revidierend, lenkt der Artikel die Aufmerksamkeit auf den Fakt, dass der Film vom Reichssicherheitshauptamt (RSHA 1942 initiiert und zum Kriegsende drei sorgfältig ausgewählten Gruppen vorgeführt wurde. Eine Untersuchung des Publikums der Premiere am 6. April 1945 lässt eine Neubewertung der Frage zu, ob der Film als Propagandafilm eingestuft werden kann oder eher als Strategem des deutschen Geheimdienstes.

Globalisierung der Wirtschaft : Auswirkungen auf lokale Unternehmen

OpenAIRE

Greve, Rolf

2000-01-01

Inhalt: 1 Globalisierung der Wirtschaft; 1.1 Die Globalisierung als Prozeß; 1.2 Gründe für die fortschreitende Globalisierung; 1.3 Eine wirtschaftswissenschaftliche Interpretation der Globalisierung; 2 Auswirkungen der Globalisierung auf lokale Unternehmen; 2.1 Betroffenheit des Mittelstandes; 2.2 Erfahrungen mit der Globalisierung – Zwei Beispiele; 3 Strategien für den Mittelstand als Antwort auf die Globalisierung; 3.1 Strategie der Hidden Champions; 3.2 Strategie der Kooperation

Biologische Angriffe auf Mauerwerke

NARCIS (Netherlands)

Schober, G.; Kort, H.S.M.; Balen, van K.; Bronswijk, van J.E.M.H.

1995-01-01

Zusammenfassung: Biologische Angriffe durch Mauerwerkbewuchs führen zu Schadensbildern, die durch Festigkeitsverlust, Formveränderungen oder Farbveränderungen auf den Oberflächen charakterisiert sind. Allerdings sind nur einige spezialisierte Pflanzen an die extremen Bedingungen dieser Lebensräume

Low temperature synthesis of InP nanocrystals

Energy Technology Data Exchange (ETDEWEB)

Ung Thi Dieu Thuy [Institute of Materials Science (IMS), Vietnamese Academy of Science and Technology (VAST), 18 Hoang Quoc Viet, Cau Giay, Hanoi (Viet Nam); Tran Thi Thuong Huyen [Institute of Materials Science (IMS), Vietnamese Academy of Science and Technology (VAST), 18 Hoang Quoc Viet, Cau Giay, Hanoi (Viet Nam); National University of Thai Nguyen, 2 Luong Ngoc Quyen, Thai Nguyen (Viet Nam); Nguyen Quang Liem [Institute of Materials Science (IMS), Vietnamese Academy of Science and Technology (VAST), 18 Hoang Quoc Viet, Cau Giay, Hanoi (Viet Nam)], E-mail: liemnq@ims.vast.ac.vn; Reiss, Peter [DSM/INAC/SPrAM, UMR 5819 CEA-CNRS-Universite Joseph Fourier/LEMOH, CEA Grenoble, 17 rue des Martyrs, 38054 Grenoble Cedex 9 (France)

2008-12-20

We present a simple method for the chemical synthesis of InP nanocrystals, which comprises several advantages: (i) the use of simple reagents, namely InCl{sub 3}.4H{sub 2}O and yellow P as the In and P precursors, respectively, and NaBH{sub 4} as the reducing agent in a mixed solvent of ethanol and toluene; (ii) a short reaction time (1-5 h) and low temperature (<75 deg. C); (iii) a high reaction yield approaching 100%. InP NCs in the zinc-blende structure have been obtained as confirmed by powder X-ray diffraction and Raman scattering measurements. Their mean size of 4 nm has been determined by transmission electron microscopy, Raman scattering and absorption spectroscopy.

Palladium nanoparticles on InP for hydrogen detection

Directory of Open Access Journals (Sweden)

Zdansky Karel

2011-01-01

Full Text Available Abstract Layers of palladium (Pd nanoparticles on indium phosphide (InP were prepared by electrophoretic deposition from the colloid solution of Pd nanoparticles. Layers prepared by an opposite polarity of deposition showed different physical and morphological properties. Particles in solution are separated and, after deposition onto the InP surface, they form small aggregates. The size of the aggregates is dependent on the time of deposition. If the aggregates are small, the layer has no lateral conductance. Forward and reverse I-V characteristics showed a high rectification ratio with a high Schottky barrier height. The response of the structure on the presence of hydrogen was monitored.

Aqueous bromine etching of InP: a specific surface chemistry

Energy Technology Data Exchange (ETDEWEB)

Causier, A.; Bouttemy, M.; Gerard, I.; Aureau, D.; Vigneron, J.; Etcheberry, A. [Institut Lavoisier de Versailles, Versailles-Saint-Quentin University, UMR CNRS 8180, 45 Av. des Etats-Unis, 78035 Versailles (France)

2012-06-15

The n -InP behaviour in HBr (0.1-1.0 M)/Br{sub 2} (1.25 x 10{sup -2}M) aqueous solutions is studied by AAS, XPS and SEM-FEG. Indium AAS-titrations of the HBr/Br{sub 2} solutions demonstrate that InP undergoes an etching mechanism whatever the HBr/Br{sub 2} formulation. The etching process is always linear with time but its rate depends on the HBr concentration. XPS analyses permit to link the apparent slow-down of the dissolution process when decreasing the HBr molarity from 1.0 M to 0.1 M to the presence of a mixed (In,P){sub ox} oxide layer on the surface. Therefore, the dissolution process of InP in HBr/Br{sub 2} solution appears to be ruled by the surface chemical state (copyright 2012 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

Diameter Dependence of Planar Defects in InP Nanowires.

Science.gov (United States)

Wang, Fengyun; Wang, Chao; Wang, Yiqian; Zhang, Minghuan; Han, Zhenlian; Yip, SenPo; Shen, Lifan; Han, Ning; Pun, Edwin Y B; Ho, Johnny C

2016-09-12

In this work, extensive characterization and complementary theoretical analysis have been carried out on Au-catalyzed InP nanowires in order to understand the planar defect formation as a function of nanowire diameter. From the detailed transmission electron microscopic measurements, the density of stacking faults and twin defects are found to monotonically decrease as the nanowire diameter is decreased to 10 nm, and the chemical analysis clearly indicates the drastic impact of In catalytic supersaturation in Au nanoparticles on the minimized planar defect formation in miniaturized nanowires. Specifically, during the chemical vapor deposition of InP nanowires, a significant amount of planar defects is created when the catalyst seed sizes are increased with the lower degree of In supersaturation as dictated by the Gibbs-Thomson effect, and an insufficient In diffusion (or Au-rich enhancement) would lead to a reduced and non-uniform In precipitation at the NW growing interface. The results presented here provide an insight into the fabrication of "bottom-up" InP NWs with minimized defect concentration which are suitable for various device applications.

Der Einfluss der Digitalisierung auf die Organisation eines Unternehmens

Science.gov (United States)

Walter, Wolfram M.

Die Digitalisierung schreitet mit großen Schritten voran. Dies wirkt sich nicht nur auf die Gesellschaft im Grundsatz, sondern auch auf das Verhalten der Kunden aus. Neue Kommunikationswege beschleunigen die Interaktion zwischen Unternehmen und Verbraucher. Im Vergleich mit großen Internetfirmen werden etablierte Dienstleistungsunternehmen - vom Energieversorger bis zu Versicherungen - stark unter Druck gesetzt, sich noch intensiver mit dem Kundenservice auseinanderzusetzen. Dies wird nur möglich sein, wenn sich die Organisationen entsprechend positionieren und sich frühzeitig auf die Veränderungen einstellen. Hieraus ergeben sich mehr Chancen als Risiken, zumal es nicht nur neue Prozesse, sondern auch neue Berufsbilder geben wird.

Silicon doped InP as an alternative plasmonic material for mid-infrared

DEFF Research Database (Denmark)

Panah, Mohammad Esmail Aryaee; Han, Li; Christensen, Dennis Valbjørn

2016-01-01

Silicon-doped InP is grown on top of semiinsulating iron-doped and sulfur-doped InP substrates by metalorganic vapor phase epitaxy (MOVPE), and the growth parameters are adjusted to obtain various free carrier concentrations from 1.05×1019 cm-3 up to 3.28×1019 cm-3. Midinfrared (IR) reflection...

ESCA and electron diffraction studies of InP surface heated under As molecular beam exposure

International Nuclear Information System (INIS)

Sugiura, Hideo; Yamaguchi, Masafumi; Shibukawa, Atsushi

1983-01-01

Chemical composition of InP substrate surface heattreated under As molecular beam exposure in an ultrahigh vacuum chamber was studied with ESCA, and surface reconstruction of the substrate was examined by in-situ electron diffraction. The InP substrate heated under the exposure of As molecular beam has mirror surface up to 590 0 C while the surface of InP heated above 400 0 C in vacuum is roughened. The ESCA study shows that thin InAs layer (thickness 0 C under the exposure of As. The electron diffraction study indicates that the InP is cleaned at about 500 0 C in As pressures of 10 -7 - 10 -5 Torr. The InP surface is prevented from thermally decomposing by the coverage of the InAs layer, which may be formed through the following process: 2InPO 4 + As 4 → 2InAs + P 2 O 5 + As 2 O 3 . (author)

Electrical properties of bulk InP synthesized by modified horizontal Bridgman method

International Nuclear Information System (INIS)

Pak, K.; Matsui, M.; Fukuhara, H.; Nishinaga, T.; Nakamura, T.; Yasuda, Y.

1986-01-01

High purity polycrystalline InP has been required for preparation of starting materials in LEC pulling. Usually, these materials are synthesized by the horizontal Bridgman (HB) or gradient freeze (GF) method. The major problem for InP synthesis has been attributed to silicon contamination during the growth, as shown by several workers. In a previous paper, the authors proposed a model in which the silicon contamination would occur due to the transport of SiO and In/sub 2/O gas species from the In-P melt to the phosphorus region by the reaction of the melt with the quartz boat in the HB growth system and suggested that the Si concentration in the In-P melt would have an intimate correlation with the temperature in the phosphorus region. However, the effect of the temperature in the phosphorus region on the electrical properties has not been studied in details as of yet. In this note, a modified horizontal Bridgman (MHB) method was developed to reduce the residual donor impurities, and the reduction mechanism is discussed

Fabrication and magnetic properties of granular Co/porous InP nanocomposite materials

Directory of Open Access Journals (Sweden)

Ma Li

2011-01-01

Full Text Available Abstract A novel Co/InP magnetic semiconductor nanocomposite was fabricated by electrodeposition magnetic Co nanoparticles into n-type porous InP templates in ethanol solution of cobalt chloride. The content or particle size of Co particles embedded in porous InP increased with increasing deposition time. Co particles had uniform distribution over pore sidewall surface of InP template, which was different from that of ceramic template and may open up new branch of fabrication of nanocomposites. The magnetism of such Co/InP nanocomposites can be gradually tuned from diamagnetism to ferromagnetism by increasing the deposition time of Co. Magnetic anisotropy of this Co/InP nanocomposite with magnetization easy axis along the axis of InP square channel was well realized by the competition between shape anisotropy and magnetocrystalline anisotropy. Such Co/InP nanocomposites with adjustable magnetism may have potential applications in future in the field of spin electronics. PACS: 61.46. +w · 72.80.Tm · 81.05.Rm · 75.75. +a · 82.45.Aa

Fabrication and magnetic properties of granular Co/porous InP nanocomposite materials.

Science.gov (United States)

Zhou, Tao; Cheng, Dandan; Zheng, Maojun; Ma, Li; Shen, Wenzhong

2011-03-31

A novel Co/InP magnetic semiconductor nanocomposite was fabricated by electrodeposition magnetic Co nanoparticles into n-type porous InP templates in ethanol solution of cobalt chloride. The content or particle size of Co particles embedded in porous InP increased with increasing deposition time. Co particles had uniform distribution over pore sidewall surface of InP template, which was different from that of ceramic template and may open up new branch of fabrication of nanocomposites. The magnetism of such Co/InP nanocomposites can be gradually tuned from diamagnetism to ferromagnetism by increasing the deposition time of Co. Magnetic anisotropy of this Co/InP nanocomposite with magnetization easy axis along the axis of InP square channel was well realized by the competition between shape anisotropy and magnetocrystalline anisotropy. Such Co/InP nanocomposites with adjustable magnetism may have potential applications in future in the field of spin electronics.PACS: 61.46. +w · 72.80.Tm · 81.05.Rm · 75.75. +a · 82.45.Aa.

Tailoring the optical characteristics of microsized InP nanoneedles directly grown on silicon.

Science.gov (United States)

Li, Kun; Sun, Hao; Ren, Fan; Ng, Kar Wei; Tran, Thai-Truong D; Chen, Roger; Chang-Hasnain, Connie J

2014-01-08

Nanoscale self-assembly offers a pathway to realize heterogeneous integration of III-V materials on silicon. However, for III-V nanowires directly grown on silicon, dislocation-free single-crystal quality could only be attained below certain critical dimensions. We recently reported a new approach that overcomes this size constraint, demonstrating the growth of single-crystal InGaAs/GaAs and InP nanoneedles with the base diameters exceeding 1 μm. Here, we report distinct optical characteristics of InP nanoneedles which are varied from mostly zincblende, zincblende/wurtzite-mixed, to pure wurtzite crystalline phase. We achieved, for the first time, pure single-crystal wurtzite-phase InP nanoneedles grown on silicon with bandgaps of 80 meV larger than that of zincblende-phase InP. Being able to attain excellent material quality while scaling up in size promises outstanding device performance of these nanoneedles. At room temperature, a high internal quantum efficiency of 25% and optically pumped lasing are demonstrated for single nanoneedle as-grown on silicon substrate. Recombination dynamics proves the excellent surface quality of the InP nanoneedles, which paves the way toward achieving multijunction photovoltaic cells, long-wavelength heterostructure lasers, and advanced photonic integrated circuits.

Room-temperature annealing of Si implantation damage in InP

International Nuclear Information System (INIS)

Akano, U.G.; Mitchell, I.V.

1991-01-01

Spontaneous recovery at 295 K of Si implant damage in InP is reported. InP(Zn) and InP(S) wafers of (100) orientation have been implanted at room temperature with 600 keV Si + ions to doses ranging from 3.6x10 11 to 2x10 14 cm -2 . Room-temperature annealing of the resultant damage has been monitored by the Rutherford backscattering/channeling technique. For Si doses ≤4x10 13 cm -2 , up to 70% of the initial damage (displaced atoms) annealed out over a period of ∼85 days. The degree of recovery was found to depend on the initial level of damage. Recovery is characterized by at least two time constants t 1 2 ∼100 days. Anneal rates observed between 295 and 375 K are consistent with an activation energy of 1.2 eV, suggesting that the migration of implant-induced vacancies is associated with the reordering of the InP lattice

Selective-area vapour-liquid-solid growth of InP nanowires

International Nuclear Information System (INIS)

Dalacu, Dan; Kam, Alicia; Guy Austing, D; Wu Xiaohua; Lapointe, Jean; Aers, Geof C; Poole, Philip J

2009-01-01

A comparison is made between the conventional non-selective vapour-liquid-solid growth of InP nanowires and a novel selective-area growth process where the Au-seeded InP nanowires grow exclusively in the openings of a SiO 2 mask on an InP substrate. This new process allows the precise positioning and diameter control of the nanowires required for future advanced device fabrication. The growth temperature range is found to be extended for the selective-area growth technique due to removal of the competition between material incorporation at the Au/nanowire interface and the substrate. A model describing the growth mechanism is presented which successfully accounts for the nanoparticle size-dependent and time-dependent growth rate. The dominant indium collection process is found to be the scattering of the group III source material from the SiO 2 mask and subsequent capture by the nanowire, a process that had previously been ignored for selective-area growth by chemical beam epitaxy.

Selective-area vapour-liquid-solid growth of InP nanowires

Energy Technology Data Exchange (ETDEWEB)

Dalacu, Dan; Kam, Alicia; Guy Austing, D; Wu Xiaohua; Lapointe, Jean; Aers, Geof C; Poole, Philip J, E-mail: dan.dalacu@nrc-cnrc.gc.c [Institute for Microstructural Sciences, National Research Council of Canada, Ottawa, K1A 0R6 (Canada)

2009-09-30

A comparison is made between the conventional non-selective vapour-liquid-solid growth of InP nanowires and a novel selective-area growth process where the Au-seeded InP nanowires grow exclusively in the openings of a SiO{sub 2} mask on an InP substrate. This new process allows the precise positioning and diameter control of the nanowires required for future advanced device fabrication. The growth temperature range is found to be extended for the selective-area growth technique due to removal of the competition between material incorporation at the Au/nanowire interface and the substrate. A model describing the growth mechanism is presented which successfully accounts for the nanoparticle size-dependent and time-dependent growth rate. The dominant indium collection process is found to be the scattering of the group III source material from the SiO{sub 2} mask and subsequent capture by the nanowire, a process that had previously been ignored for selective-area growth by chemical beam epitaxy.

Reverse Current Characteristics of InP Gunn Diodes for W-Band Waveguide Applications.

Science.gov (United States)

Kim, Hyun-Seok; Heo, Jun-Woo; Chol, Seok-Gyu; Ko, Dong-Sik; Rhee, Jin-Koo

2015-07-01

InP is considered as the most promising material for millimeter-wave laser-diode applications owing to its superior noise performance and wide operating frequency range of 75-110 GHz. In this study, we demonstrate the fabrication of InP Gunn diodes with a current-limiting structure using rapid thermal annealing to modulate the potential height formed between an n-type InP active layer and a cathode contact. We also explore the reverse current characteristics of the InP Gunn diodes. Experimental results indicate a maximum anode current and an oscillation frequency of 200 mA and 93.53 GHz, respectively. The current-voltage characteristics are modeled by considering the Schottky and ohmic contacts, work function variations, negative differential resistance (NDR), and tunneling effect. Although no direct indication of the NDR is observed, the simulation results match the measured data well. The modeling results show that the NDR effect is always present but is masked because of electron emission across the shallow Schottky barrier.

InP HEMT Integrated Circuits for Submillimeter Wave Radiometers in Earth Remote Sensing

Science.gov (United States)

Deal, William R.; Chattopadhyay, Goutam

2012-01-01

The operating frequency of InP integrated circuits has pushed well into the Submillimeter Wave frequency band, with amplification reported as high as 670 GHz. This paper provides an overview of current performance and potential application of InP HEMT to Submillimeter Wave radiometers for earth remote sensing.

Electronic and magnetic properties of digitally Ti doped InP: A first principles study

International Nuclear Information System (INIS)

Rahman, Gul; Cho, Sunglae; Hong, Soon Cheol

2008-01-01

Using the full-potential linearized augmented plane wave method within the generalized gradient approximation, we study the electronic and the magnetic properties of digitally Ti doped InP. It is quite interesting that digitally Ti-doped InP system shows half metallic ferromagnetism even though both bulk zinc blende TiP and InP are paramagnetic. We also investigate the electronic and the magnetic properties as a function of spacer layer thickness. Their properties such as exchange coupling constant and atomic projected density of states are more or less independent of the InP thickness. Spin density contour maps indicate that the spin-polarization is confined within the TiP plane. The system may show a highly anisotropic property in spin-polarized transport. (copyright 2008 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

Twin and grain boundary in InP: A synchrotron radiation study

International Nuclear Information System (INIS)

Han, Y.; Liu, X.; Jiao, J.; Lin, L.; Jiang, J.; Wang, Z.; Tian, Y.

1998-01-01

Experimentally observed X-ray reflectivity curves show bi-crystal(twin) characteristics. The study revealed that there was defect segregation at the twin boundary. Stress was relaxed at the edge of the boundary. Relaxation of the stress resulted in formation of twin and other defects. As a result of formation of such defects, a defect-free and stress-free zone or low defect density and small stress zone is created around the defects. So a twin model was proposed to explain the experimental results. Stress(mainly thermal stress), chemical stoichiometry deviation and impurities nonhomogeneous distributions are the key factors that cause twins in LEC InP crystal growth. Twins on (111) face in LEC InP crystal were studied. Experimental evidence of above mentioned twin model and suggestions on how to get twin-free LEC InP single crystals will be discussed

InP on SOI devices for optical communication and optical network on chip

Science.gov (United States)

Fedeli, J.-M.; Ben Bakir, B.; Olivier, N.; Grosse, Ph.; Grenouillet, L.; Augendre, E.; Phillippe, P.; Gilbert, K.; Bordel, D.; Harduin, J.

2011-01-01

For about ten years, we have been developing InP on Si devices under different projects focusing first on μlasers then on semicompact lasers. For aiming the integration on a CMOS circuit and for thermal issue, we relied on SiO2 direct bonding of InP unpatterned materials. After the chemical removal of the InP substrate, the heterostructures lie on top of silicon waveguides of an SOI wafer with a separation of about 100nm. Different lasers or photodetectors have been achieved for off-chip optical communication and for intra-chip optical communication within an optical network. For high performance computing with high speed communication between cores, we developed InP microdisk lasers that are coupled to silicon waveguide and produced 100μW of optical power and that can be directly modulated up to 5G at different wavelengths. The optical network is based on wavelength selective circuits with ring resonators. InGaAs photodetectors are evanescently coupled to the silicon waveguide with an efficiency of 0.8A/W. The fabrication has been demonstrated at 200mm wafer scale in a microelectronics clean room for CMOS compatibility. For off-chip communication, silicon on InP evanescent laser have been realized with an innovative design where the cavity is defined in silicon and the gain localized in the QW of bonded InP hererostructure. The investigated devices operate at continuous wave regime with room temperature threshold current below 100 mA, the side mode suppression ratio is as high as 20dB, and the fibercoupled output power is {7mW. Direct modulation can be achieved with already 6G operation.

InAs quantum wires on InP substrate for VCSEL applications

OpenAIRE

Lamy , Jean-Michel; Paranthoën , Cyril; Levallois , Christophe; Nakkar , Abdulhadi; Folliot , Hervé; Dehaese , Olivier; Le Corre , Alain; Loualiche , Slimane; Castany , Olivier; Dupont , Laurent

2008-01-01

International audience; Quantum dash based vertical cavity surface emitting lasers (VCSEL) on InP substrate are presented. Single and close stacking layers were successfully grown with molecular beam epitaxy. Optimized quantum dash layers exhibit a strong polarized 1.55 µm photoluminescence along the [1-10] crystallographic axis. Continuous wave laser emission is demonstrated at room temperature for the first time on a quantum dash VCSEL structure on InP susbtrate. The quantum dash VCSEL lase...

Magnetic circular dichroism study of electron-irradiation induced defects in InP

International Nuclear Information System (INIS)

Gislason, H.P.

1989-01-01

A strong magnetic circular dichroism (MCD) absorption band centered at 1.07 eV in electron irradiated InP is reported. Temperature and magnetic field dependence of the signal reveal that the centre giving rise to this band is a spin triplet. By simulating neutral and reverse bias conditions of junction measurements through a careful choice of irradiation dose and starting material, the MCD band is shown to have an annealing behaviour closely resembling that of the majority carrier traps which control the Fermi level position in n- and p-type InP. The 1.07 eV MCD band represents the first magneto-optical signal connected with this family of complex irradiation-induced defects in InP. (author) 19 refs., 5 figs., 1 tab

Anodic oxidation of InP in pure water

International Nuclear Information System (INIS)

Robach, Y.; Joseph, J.; Bergignat, E.; Hollinger, G.

1989-01-01

It is shown that thin InP native oxide films can be grown by anodization of InP in pure water. An interfacial phosphorus-rich In(PO 3 ) 3 -like condensed phosphate is obtained this way. This condensed phosphate has good passivating properties and can be used in electronic device technology. The chemical composition of these native oxides was found similar to that of an anodic oxide grown in an anodization in glycol and water (AGW) electrolyte. From the similarity between the two depth profiles observed in pure water and AGW electrolyte, they can conclude that dissolution phenomena do not seem to play a major role. The oxide growth seems to be controlled by the drift of ionic species under the electric field

Vapor-phase etching of InP using anhydrous HCl and PH/sub 3/ gas

International Nuclear Information System (INIS)

Pak, K.; Koide, Y.; Imai, K.; Yoshida, A.; Nakamura, T.; Yasuda, Y.; Nishinaga, T.

1986-01-01

In situ etching of the substrate surface for vapor-phase epitaxy is a useful technique for obtaining a smooth and damage-free surface prior to the growth. Previous work showed that the incorporation of in situ etching of InP substrate with anhydrous HCl gas resulted in a significant improvement in the surface morphologies for MOVPE-grown InGaAs/InP and InP epitaxial layers. However, the experiment on the HCl etching of the InP substrate for a wide temperature range has not been performed as yet. In this note, the authors describe the effect of the substrate temperature on the etching morphology of InP substrate by using the anhydrous HCl and PH/sub 3/ gases. In the experiment, they used a standard MOVPE horizontal system. A quartz reactor tube in a 60 mm ID, 60 cm long, was employed

High resolution resonant Raman scattering in InP and GaAs

International Nuclear Information System (INIS)

Kernohan, E.T.M.

1996-04-01

Previous studies of III-V semiconductors using resonant Raman scattering have concentrated on measuring the variations in scattering intensity under different excitation conditions. The shape of the Raman line also contains important information, but this has usually been lost because the low signal strengths mean that resolution has been sacrificed for sensitivity. It might therefore be expected that further insights into the processes involved in Raman scattering could be obtained by using high resolution methods. In this thesis I have measured single- and multiple- phonon scattering from bulk GaAs and InP with a spectral resolution better than the intrinsic widths of the Raman lines. For scattering in the region of one longitudinal optic (LO) phonon energy, it is found that in InP the scattering in the allowed and forbidden configurations occur at different Raman shifts, above and below the zone-centre phonon energy respectively. These shifts are used to determine the scattering processes involved, and how they differ between InP and GaAs. The lineshapes obtained in multiple-phonon scattering are found to depend strongly on the excitation energy used, providing evidence for the presence of intermediate resonances. The measured spectra are used to provide information about the phonon dispersion of InP, whose dispersion it is difficult to measure in any other way, and the first evidence is found for an upward dispersion of the LO mode. Raman lineshapes are measured for InP in a magnetic field. The field alters the electronic bandstructure, leading to a series of strong resonances in the Raman efficiency due to interband magneto-optical transitions between Landau levels. This allows multiphonon processes up to sixth-order to be investigated. (author)

Epitaxial growth and processing of InP films in a ``novel`` remote plasma-MOCVD apparatus

Energy Technology Data Exchange (ETDEWEB)

Bruno, G. [Bari Univ. (Italy). Centro di Studio per la Chimica; Losurdo, M. [Bari Univ. (Italy). Centro di Studio per la Chimica; Capezzuto, P. [Bari Univ. (Italy). Centro di Studio per la Chimica; Capozzi, V. [Bari Univ. (Italy). Ist. di Fisica; Lorusso, F.G. [Bari Univ. (Italy). Ist. di Fisica; Minafra, A. [Bari Univ. (Italy). Ist. di Fisica

1996-06-01

A new remote plasma MOCVD apparatus for the treatment and deposition of III-V materials and, specifically, of indium phosphide, has been developed. The plasma source is used to produce hydrogen atoms and to predissociate phosphine for, respectively, the reduction of native oxide on InP substrate surface and the InP deposition. In situ diagnostics by optical emission spectroscopy, mass spectrometry, and spectroscopic ellipsometry are used to fingerprint the gas phase and the growth surface. The plasma cleaning process effectively reduce the InP oxide layer without surface damage. Indium phosphide epilayers deposited from trimethylindium and plasma activated PH{sub 3} show singular photoluminescence spectra with signal intensity higher than that of the best InP film deposited under conventional MOCVD condition (without PH{sub 3} plasma preactivation). (orig.)

Single-electron tunneling in InP nanowires

NARCIS (Netherlands)

Franceschi, De S.; Dam, Van J.A.; Bakkers, E.P.A.M.; Feiner, L.F.; Gurevich, L.; Kouwenhoven, L.P.

2003-01-01

A study was performed on single-electron tunneling in InP nanowires. The contact resistances as low as ~10 k¿, with minor temperature dependence were obtained. The Coulomb-blockade behavior was shown with single-electron charging energies of ~1 meV.

InP membrane on silicon integration technology

NARCIS (Netherlands)

Smit, M.K.

2013-01-01

Integration of light sources in silicon photonics is usually done with an active InP-based layer stack on a silicon-based photonic circuit-layer. InP Membrane On Silicon (IMOS) technology integrates all functionality in a single InP-based layer.

Growth of InP directly on Si by corrugated epitaxial lateral overgrowth

International Nuclear Information System (INIS)

Metaferia, Wondwosen; Kataria, Himanshu; Sun, Yan-Ting; Lourdudoss, Sebastian

2015-01-01

In an attempt to achieve an InP–Si heterointerface, a new and generic method, the corrugated epitaxial lateral overgrowth (CELOG) technique in a hydride vapor phase epitaxy reactor, was studied. An InP seed layer on Si (0 0 1) was patterned into closely spaced etched mesa stripes, revealing the Si surface in between them. The surface with the mesa stripes resembles a corrugated surface. The top and sidewalls of the mesa stripes were then covered by a SiO 2 mask after which the line openings on top of the mesa stripes were patterned. Growth of InP was performed on this corrugated surface. It is shown that growth of InP emerges selectively from the openings and not on the exposed silicon surface, but gradually spreads laterally to create a direct interface with the silicon, hence the name CELOG. We study the growth behavior using growth parameters. The lateral growth is bounded by high index boundary planes of {3 3 1} and {2 1 1}. The atomic arrangement of these planes, crystallographic orientation dependent dopant incorporation and gas phase supersaturation are shown to affect the extent of lateral growth. A lateral to vertical growth rate ratio as large as 3.6 is achieved. X-ray diffraction studies confirm substantial crystalline quality improvement of the CELOG InP compared to the InP seed layer. Transmission electron microscopy studies reveal the formation of a direct InP–Si heterointerface by CELOG without threading dislocations. While CELOG is shown to avoid dislocations that could arise due to the large lattice mismatch (8%) between InP and Si, staking faults could be seen in the layer. These are probably created by the surface roughness of the Si surface or SiO 2 mask which in turn would have been a consequence of the initial process treatments. The direct InP–Si heterointerface can find applications in high efficiency and cost-effective Si based III–V semiconductor multijunction solar cells and optoelectronics integration. (paper)

Assembly of phosphide nanocrystals into porous networks: formation of InP gels and aerogels.

Science.gov (United States)

Hitihami-Mudiyanselage, Asha; Senevirathne, Keerthi; Brock, Stephanie L

2013-02-26

The applicability of sol-gel nanoparticle assembly routes, previously employed for metal chalcogenides, to phosphides is reported for the case of InP. Two different sizes (3.5 and 6.0 nm) of InP nanoparticles were synthesized by solution-phase arrested precipitation, capped with thiolate ligands, and oxidized with H₂O₂ or O₂/light to induce gel formation. The gels were aged, solvent-exchanged, and then supercritically dried to obtain aerogels with both meso- (2-50 nm) and macropores (>50 nm) and accessible surface areas of ∼200 m²/g. Aerogels showed higher band gap values relative to precursor nanoparticles, suggesting that during the process of assembling nanoparticles into 3D architectures, particle size reduction may have taken place. In contrast to metal chalcogenide gelation, InP gels did not form using tetranitromethane, a non-oxygen-transferring oxidant. The requirement of an oxygen-transferring oxidant, combined with X-ray photoelectron spectroscopy data showing oxidized phosphorus, suggests gelation is occurring due to condensation of phosphorus oxoanionic moieties generated at the interfaces. The ability to link discrete InP nanoparticles into a 3D porous network while maintaining quantum confinement is expected to facilitate exploitation of nanostructured InP in solid-state devices.

High microwave performance ion-implanted GaAs MESFETs on InP substrates

International Nuclear Information System (INIS)

Wada, M.; Kato, K.

1990-01-01

Ion implantation was employed, for the first time, in fabricating GaAs MESFETs in undoped 2 μm thick GaAs epitaxial layers directly grown on InP substrates by low-pressure MOVPE. The Si-ion-implanted GaAs layer on InP substrates showed excellent electrical characteristics: a mobility of 4300 cm 2 /Vs with a carrier density of 2 x 10 17 cm -3 at room temperature. The MESFET (0.8 μm gate length) exhibited a current-gain cutoff frequency of 25 GHz and a maximum frequency of oscillation of 53 GHz, the highest values yet reported to GaAs MESFETs on InP substrates. These results demonstrate the high potential of ion-implanted MESFETs as electronic devices for high-speed InP-based OEICs. (author)

Electrical properties of InP irradiated by fast neutrons of a nuclear reactor

International Nuclear Information System (INIS)

Kolin, N.G.; Merkurisov, D.I.; Solov'ev, S.P.

2000-01-01

Electrophysical properties of InP single crystalline samples with different initial concentration of charge carriers have been studied in relation to irradiation conditions with fast neutrons of a nuclear reactor and subsequent heat treatments within the temperature range of 20-900 deg C. It has been shown that changes of the properties depend on the initial doping level. The annealing in the temperature range mentioned above results in the elimination of radiation defects. This makes possible to use the nuclear doping method for InP samples. In this respect the contribution of intermediate neutron reactions to the whole effect of the InP nuclear doping is estimated to be ∼ 10% [ru

Surface protection during plasma hydrogenation for acceptor passivation in InP

International Nuclear Information System (INIS)

Lopata, J.; Dautremont-Smith, W.C.; Pearton, S.J.; Lee, J.W.; Ha, N.T.; Luftman, H.S.

1990-01-01

Various dielectric and metallic films were examined as H-permeable surface protection layers on InP during H 2 or D 2 plasma exposure for passivation of acceptors in the InP. Plasma deposited SiN x , SiO 2 , and a-Si(H) films ranging in thickness from 85 to 225 angstrom were used to protect p-InP during d 2 plasma exposure at 250 degrees C. Optimum protective layer thicknesses were determined by a trade-off between the effectiveness of the layer to prevent P loss from the wafer surface and the ability to diffuse atomic H or D at a rate greater than or equal to that in the underlying InP. SIMS and capacitance-voltage depth profiling were used to determine the extent of D in-diffusion and acceptor passivation respectively. Sputter deposited W and e-beam evaporated Ti films ∼100 Angstrom thick were also evaluated. The W coated sample yielded similar results to those with dielectric films in that acceptors in p-InP were passivated to a similar depth for the same plasma exposure. The 100 Angstrom Ti film, however, did not allow the D to diffuse into the InP substrate. It is surmised that the Ti film trapped the D, thus preventing diffusion into the substrate

Ein Ausblick auf Supply-Chain-Management im Jahr 2016

DEFF Research Database (Denmark)

Wieland, Andreas

2016-01-01

Wie sieht Supply-Chain-Management im Jahr 2016 aus? Was erwartet uns? Vieles deutet darauf hin, dass SCM in Zukunft sogar noch mehr auf den Kunden gerichtet sein könnte als bisher.......Wie sieht Supply-Chain-Management im Jahr 2016 aus? Was erwartet uns? Vieles deutet darauf hin, dass SCM in Zukunft sogar noch mehr auf den Kunden gerichtet sein könnte als bisher....

Thermal stability of atom configurations around Er atoms doped in InP by OMVPE

International Nuclear Information System (INIS)

Ofuchi, Hironori; Ito, Takashi; Kawamoto, Takeshi; Tabuchi, Masao; Fujiwara, Yasufumi; Takeda, Yoshikazu

1999-01-01

It has been found that there is a threshold growth temperature between 550 deg C and 580 deg C for the change of local structure around Er atoms in InP doped Er atoms grown by organometallic vapor phase epitaxy (OMVPE). To understand whether the structure change is induced at the growing surface or during the growth as an in situ annealing, the thermal stability of the local structures around the Er atoms doped in InP by the OMVPE at 530 deg C has been investigated by the extended X-ray absorption fine structure (EXAFS). The EXAFS analysis revealed that the local structure around the Er atoms, which existed substitutionally on In sites in the InP lattice, was stable against the post-growth annealing even for 1 h at 650 deg C. Therefore, it is concluded that the local structures are formed on the growth front, and not in the volume of InP by thermal annealing during or after the growth. (author)

Hydrogen passivation of n+p and p+n heteroepitaxial InP solar cell structures

Science.gov (United States)

Chatterjee, B.; Ringel, S. A.; Hoffman, R., Jr.

1995-01-01

High-efficiency, heteroepitaxial (HE) InP solar cells, grown on GaAs, Si or Ge substrates, are desirable for their mechanically strong, light-weight and radiation-hard properties. However, dislocations, caused by lattice mismatch, currently limit the performance of the HE cells. This occurs through shunting paths across the active photovoltaic junction and by the formation of deep levels. In previous work we have demonstrated that plasma hydrogenation is an effective and stable means to passivate the electrical activity of dislocations in specially designed HE InP test structures. In this work, we present the first report of successful hydrogen passivation in actual InP cell structures grown on GaAs substrates by metalorganic chemical vapor deposition (MOCVD). We have found that a 2 hour exposure to a 13.56 MHz hydrogen plasma at 275 C reduces the deep level concentration in HE n+n InP cell structures from as-grown values of approximately 10(exp 15)/cm(exp -3), down to 1-2 x 10(exp 13)/cm(exp -3). The deep levels in the p-type base region of the cell structure match those of our earlier p-type test structures, which were attributed to dislocations or related point defect complexes. All dopants were successfully reactivated by a 400 C, 5 minute anneal with no detectable activation of deep levels. I-V analysis indicated a subsequent approximately 10 fold decrease in reverse leakage current at -1 volt reverse bias, and no change in the forward biased series resistance of the cell structure which indicates complete reactivation of the n+ emitter. Furthermore, electrochemical C-V profiling indicates greatly enhanced passivation depth, and hence hydrogen diffusion, for heteroepitaxial structures when compared with identically processed homoepitaxial n+p InP structures. An analysis of hydrogen diffusion in dislocated InP will be discussed, along with comparisons of passivation effectiveness for n+p versus p+n heteroepitaxial cell configurations. Preliminary hydrogen

Zahlen und Rechenvorgänge auf unterschiedlichen Abstraktionsniveaus

Science.gov (United States)

Rödler, Klaus

"Das Verständnis geht langsam vor sich!" Diesen wichtigen Satz hörte ich bei einem Vortrag von Martin Lowsky. Auf die hier behandelte Fragestellung übertragen heißt das: Was eine Zahl ist und wie ich sie im Rechenvorgang einsetzen und interpretieren kann, das erschließt sich erst allmählich. Die Zahl des Rechenanfängers ist nicht dieselbe wie die des kompetenten Rechners und es ist nicht die Zahl des Lehrers oder der Lehrerin. Die Zahlen sind nur auf der Oberfläche der Worte und Zeichen gleich. Im Innern, im Verständnis, sind sie völlig verschieden! Ich glaube, dass die Missachtung dieser Divergenz dazu führt, dass manche Kinder in für den Lehrer und Lehrerin nicht nachvollziehbaren Routinen stecken bleiben, einfachste Informationen nicht wirklich integrieren. Die auf beiden Seiten wachsende Verunsicherung durch die nicht erkannte und daher nicht kommunizierbare Diskrepanz im inneren Zahlkonzept stört den allmählichen Aufbau strukturierter Zahlvorstellungen.

Composition and structure of ion-bombardment-induced growth cones on InP

International Nuclear Information System (INIS)

Malherbe, J.B.; Lakner, H.; Gries, W.H.

1991-01-01

The previously reported effect of low-energy (several keV) ion bombardment on the surface topography of InP was investigated by scanning transmission electron microscopy. Convergent beam electron diffraction patterns of the surface growth 'cones' induced by argon ion bombardment of (100) InP between 7 and 10 keV proved the cones to consist of crystalline InP (and not metallic indium, as has sometimes been claimed). The investigation showed that the irradiated surface region is not rendered completely amorphous but that it recrystallizes from the crystalline/amorphous interface in a columnar growth pattern, often terminating in growth cones protruding above the surface. Weak beam investigations revealed that the overwhelming majority of the cones have the orientation of the substrate. These phenomena were observed at all dose densities from 7 x 10 15 to 2 x 10 17 cm -2 . (author)

Structural analysis of erbium {delta}-doped InP by OMVPE with RBS-channeling

Energy Technology Data Exchange (ETDEWEB)

Yuhara, Junji; Takeda, Hitoshi; Matsubara, Naoki; Tabuchi, Masao; Fujiwara, Yasufumi; Morita, Kenji; Takeda, Yoshikazu [Nagoya Univ. (Japan). School of Engineering

1997-03-01

We have determined the lattice location of Er in InP {delta}-doped by OMVPE with RBS-channeling. Er concentrations along the <001> and <011> directions are same as random yields, while a significant flux peaking effect is seen for the <111> direction. These data suggest that Er atoms occupy the site equivalent to the hexahedral site in InP lattice. (author)

Saturation broadening effect in an InP photonic-crystal nanocavity switch

DEFF Research Database (Denmark)

Yu, Yi; Palushani, Evarist; Heuck, Mikkel

2014-01-01

Pump-probe measurements on InP photonic-crystal nanocavities show large-contrast fast switching at low pulse energy. For large pulse energies, large resonance shifts passing across the probe lead to switching contrast saturation and switching time-window broadening. © 2014 OSA.......Pump-probe measurements on InP photonic-crystal nanocavities show large-contrast fast switching at low pulse energy. For large pulse energies, large resonance shifts passing across the probe lead to switching contrast saturation and switching time-window broadening. © 2014 OSA....

Metastability of the phosphorus antisite defect in low-temperature InP

International Nuclear Information System (INIS)

Mikucki, J.; Baj, M.; Wasik, D.; Walukiewicz, W.; Bi, W. G.; Tu, C. W.

2000-01-01

We report on the transport properties of low-temperature (LT) InP/In x Ga 1-x As/InP heterostructures and LT InP thin films. Hall effect measurements performed at hydrostatic pressure up to 1.5 GPa and temperatures ranging from 4.2 K to 250 K on both types of samples as well as Shubnikov-de Haas experiments made on heterostructures clearly reveal the metastable character of phosphorus antisite defects present in LT InP layers. (c) 2000 The American Physical Society

Performance, defect behavior and carrier enhancement in low energy, proton irradiated p+nn+ InP solar cells

Science.gov (United States)

Weinberg, I.; Rybicki, G. C.; Vargas-Aburto, C.; Jain, R. K.; Scheiman, D.

1994-01-01

The highest AMO efficiency (19.1 percent) InP solar cell consisted of an n+pp+ structure epitaxially grown on a p+ InP substrate. However, the high cost and relative fragility of InP served as motivation for research efforts directed at heteroepitaxial growth of InP on more viable substrates. The highest AMO efficiency (13.7 percent) for this type of cell was achieved using a GaAs substrate. Considering only cost and fracture toughness, Si would be the preferred substrate. The fact that Si is a donor in InP introduces complexities which are necessary in order to avoid the formation of an efficiency limiting counterdiode. One method used to overcome this problem lies in employing an n+p+ tunnel junction in contact with the cell's p region. A simpler method consists of using an n+ substrate and processing the cell in the p+ nn+ configuration. This eliminates the need for a tunnel junction. Unfortunately, the p/n configuration has received relatively little attention the best cell with this geometry having achieved an efficiency of 17 percent. Irradiation of these homoepitaxial cells, with 1 Mev electrons, showed that they were slightly more radiation resistant than diffused junction n/p cells. Additional p/n InP cells have been processed by some activity aimed at diffusion. Currently, there has been some activity aimed at producing heteroepitaxial p+nn+ InP cells using n+ Ge substrates. Since, like Si, Ge is an n-dopant in InP, use of this configuration obviates the need for a tunnel junction. Obviously, before attempting to process heteroepitaxial cells, one must produce a reasonably good homoepitaxial cell. In the present case we focus our attention on homoepitaxially on an n+ Ge substrate.

Synthese von analogen Filtern auf einer rekonfigurierbaren Hardware-Architektur mittels eines Genetischen Algorithmus

Directory of Open Access Journals (Sweden)

S. Trendelenburg

2008-05-01

Full Text Available Rekonfigurierbare Analog-Arrays (FPAAs sind der Versuch, die Vorteile der aus der digitalen Welt bekannten FPGAs (Flexibilität, Entwurfsgeschwindigkeit auch für analoge Anwendungen verfügbar zu machen. Aufgrund der Vielfalt der analogen Schaltungstechnik ist die Abbildung von vorgegebenen Schaltungskonzepten auf eine FPAA-Architektur nicht immer einfach lösbar.

Diese Arbeit stellt einen neuen Ansatz für die Synthese von Filtern auf einer FPAA-Architektur für zeitkontinuierliche Analogfilter mittels eines Genetischen Algorithmus (GA vor. Anhand eines Matlab-Modells des FPAA, das eine gute übereinstimmung mit Simulationen des FPAA auf Transistorebene aufweist, wurde gezeigt, dass eine große Vielzahl verschiedener Filterstrukturen auf dieser Architektur dargestellt werden kann. Daraufhin wurde ein Genetischer Algorithmus entwickelt, der es erlaubt, aus einer gegebenen Filterspezifikation Konfigurationsdatensätze zu synthetisieren, die den gewünschten Filter auf die FPAA-Architektur abbilden.

Budker INP in the LHC Machine (2)

CERN Multimedia

2001-01-01

The main BINP contributions to the LHC machine are magnets for transfer lines (26 MCHF) and bus- bar sets (23 MCHF). Budker INP is also responsible for construction of some other LHC magnets and vacuum parts. In total, the contribution to the LHC machine will reach about 90 MCHF.

Surface Plasmons on Highly Doped InP

DEFF Research Database (Denmark)

Panah, Mohammad Esmail Aryaee; Ottaviano, Luisa; Semenova, Elizaveta

2016-01-01

Silicon doped InP is grown by metal-organic vapor phase epitaxy (MOVPE) using optimized growth parameters to achieve high free carrier concentration. Reflectance of the grown sample in mid-IR range is measured using FTIR and the result is used to retrieve the parameters of the dielectric function...

Influence of the cone angle and crystal shape on the formation of twins in InP crystals

International Nuclear Information System (INIS)

Li, Xiaolan; Yang, Ruixia; Yang, Fan; Sun, Tongnian; Sun, Niefeng

2012-01-01

We present the investigation of twinning phenomena of LEC InP crystal growth which has been carried out in our laboratory in recent years. It is observed that the yield of twin-free single crystal InP can be grown by control the cone angle and crystal shape of a gradually increased diameter. Twin formation has been correlated to many growth factors. The influence of ingot shape on the formation of twins can be looked as the conical angle dependent twin probability of InP crystals. Twin-free InP crystals can be grown by large cone angle over 75 to 90 . (copyright 2012 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

Views on information literacy / Sichten auf Informationskompetenz

OpenAIRE

Hapke, Thomas

2017-01-01

Poster (in English and German language) illustrating different views on information literacy. Poster in deutscher und englischer Sprache zur Veranschaulichung verschiedener Sichten auf Informationskompetenz.

Temperature Dependence of Interband Transitions in Wurtzite InP Nanowires.

Science.gov (United States)

Zilli, Attilio; De Luca, Marta; Tedeschi, Davide; Fonseka, H Aruni; Miriametro, Antonio; Tan, Hark Hoe; Jagadish, Chennupati; Capizzi, Mario; Polimeni, Antonio

2015-04-28

Semiconductor nanowires (NWs) formed by non-nitride III-V compounds grow preferentially with wurtzite (WZ) lattice. This is contrary to bulk and two-dimensional layers of the same compounds, where only zincblende (ZB) is observed. The absorption spectrum of WZ materials differs largely from their ZB counterparts and shows three transitions, referred to as A, B, and C in order of increasing energy, involving the minimum of the conduction band and different critical points of the valence band. In this work, we determine the temperature dependence (T = 10-310 K) of the energy of transitions A, B, and C in ensembles of WZ InP NWs by photoluminescence (PL) and PL excitation (PLE) spectroscopy. For the whole temperature and energy ranges investigated, the PL and PLE spectra are quantitatively reproduced by a theoretical model taking into account contribution from both exciton and continuum states. WZ InP is found to behave very similarly to wide band gap III-nitrides and II-VI compounds, where the energy of A, B, and C displays the same temperature dependence. This finding unveils a general feature of the thermal properties of WZ materials that holds regardless of the bond polarity and energy gap of the crystal. Furthermore, no differences are observed in the temperature dependence of the fundamental band gap energy in WZ InP NWs and ZB InP (both NWs and bulk). This result points to a negligible role played by the WZ/ZB differences in determining the deformation potentials and the extent of the electron-phonon interaction that is a direct consequence of the similar nearest neighbor arrangement in the two lattices.

Hydrogen Passivation of N(+)P and P(+)N Heteroepitaxial InP Solar Cell Structures

Science.gov (United States)

Chatterjee, B.; Davis, W. C.; Ringel, S. A.; Hoffman, R., Jr.

1995-01-01

Dislocations and related point defect complexes caused by lattice mismatch currently limit the performance of heteroepitaxial InP cells by introducing shunting paths across the active junction and by the formation of deep traps within the base region. We have previously demonstrated that plasma hydrogenation is an effective and stable means to passivate the electrical activity of such defects in specially designed heteroepitaxial InP test structures to probe hydrogen passivation at typical base depths within a cell structure. In this work, we present our results on the hydrogen passivation of actual heteroepitaxial n(+)p and p(+)n InP cell structures grown on GaAs substrates by metalorganic chemical vapor deposition (MOCVD). We have found that a 2 hour exposure to a 13.56 MHz hydrogen plasma at 275 C reduces the deep level concentration in the base regions of both n(+)p and p(+)n heteroepitaxial InP cell structures from as-grown values of 5 - 7 x 10(exp 14)/cc, down to 3 - 5 x 10(exp 12)/cc. All dopants were successfully reactivated by a 400 C, 5 minute anneal With no detectable activation of deep levels. I-V analysis indicated a subsequent approx. 100 fold decrease In reverse leakage current at -1 volt reverse bias, and an improved built in voltage for the p(+)n structures. ln addition to being passivated,dislocations are also shown to participate in secondary interactions during hydrogenation. We find that the presence of dislocations enhances hydrogen diffusion into the cell structure, and lowers the apparent dissociation energy of Zn-H complexes from 1.19 eV for homoepitaxial Zn-doped InP to 1.12 eV for heteroepitaxial Zn-doped InP. This is explained by additional hydrogen trapping at dislocations subsequent to the reactivation of Zn dopants after hydrogenation.

Hydrogen passivation of N(+)-P and P(+)-N heteroepitaxial InP solar cell structures

Science.gov (United States)

Chatterjee, Basab; Davis, William C.; Ringel, Steve A.; Hoffman, Richard, Jr.

1996-01-01

Dislocations and related point defect complexes caused by lattice mismatch currently limit the performance of heteroepitaxial InP cells by introducing shunting paths across the active junction and by the formation of deep traps within the base region. We have previously demonstrated that plasma hydrogenation is an effective and stable means to passivate the electrical activity of such defects in specially designed heteroepitaxial InP test structures to probe hydrogen passivation at typical base depths within a cell structure. In this work, we present our results on the hydrogen passivation of actual heteroepitaxial n-p and p-n InP cell structures grown on GaAs substrates by metalorganic chemical vapor deposition (MOCVD). We have found that a 2 hour exposure to a 13.56 MHz hydrogen plasma at 275 C reduces the deep level concentration in the base regions of both n(+)-p and p(+)-n heteroepitaxial InP cell structures from as-grown values of 5-7 x 10(exp 14) cm(exp -3), down to 3-5 x 10(exp 12) cm(exp -3). All dopants were successfully reactivated by a 400 C, 5 minute anneal with no detectable activation of deep levels. One to five analysis indicated a subsequent approximately 100 fold decrease in reverse leakage current at -1 volt reverse bias, and an improved built in voltage for the p(+)-n structures. In addition to being passivated, dislocations are also shown to participate in secondary interactions during hydrogenation. We find that the presence of dislocations enhances hydrogen diffusion into the cell structure, and lowers the apparent dissociation energy of Zn-H complexes from 1.19 eV for homoepitaxial Zn-doped InP to 1.12 eV for heteroepitaxial Zn-doped InP. This is explained by additional hydrogen trapping at dislocations subsequent to the reactivation of Zn dopants after hydrogenation.

Ultrafast recombination in H+ bombarded InP and GaAs: Consequences for the carrier distribution functions

International Nuclear Information System (INIS)

Lamprecht, K.F.; Juen, S.; Hoepfel, R.A.; Palmetshofer, L.

1992-01-01

The authors studied the lifetimes and the luminescence spectra of photoexcited carriers in H + bombarded InP and GaAs for different damage doses by means of femtosecond luminescence spectroscopy. For InP the lifetime decreases down to 95 fs for the highest dose, whereas for GaAs no shorter lifetime than 650 fs could be observed. With decreasing lifetime they observe an increase of the high energy tail of the time-integrated luminescence spectrum which is even inverted for the 95 fs InP sample

InP and InAs nanowires hetero- and homojunctions: energetic stability and electronic properties.

Science.gov (United States)

Dionízio Moreira, M; Venezuela, P; Miwa, R H

2010-07-16

We performed an ab initio total energy investigation, within the density functional theory, of the energetic stability and the electronic properties of hydrogenated InAs/InP nanowire (NW) heterojunctions, as well as InAs and InP homojunctions composed of different structural arrangements, zinc-blend (zb) and wurtzite (w). For InAs/InP NW heterojunctions our results indicate that w and zb NW heterojunctions are quite similar, energetically, for thin NWs. We also examined the robustness of the abrupt interface through an atomic swap at the InAs/InP interface. Our results support the formation of abrupt (non-abrupt) interfaces in w (zb) InAs/InP heterojunctions. Concerning InAs/InP NW-SLs, our results indicate a type-I band alignment, with the energy barrier at the InP layers, in accordance with experimental works. For InAs or InP zb/w homojunctions, we also found a type-I band alignment for thin NWs, however, on increasing the NW diameter both InAs and InP homojunctions exhibit a type-II band alignment.

InP and InAs nanowires hetero- and homojunctions: energetic stability and electronic properties

International Nuclear Information System (INIS)

Dionizio Moreira, M; Venezuela, P; Miwa, R H

2010-01-01

We performed an ab initio total energy investigation, within the density functional theory, of the energetic stability and the electronic properties of hydrogenated InAs/InP nanowire (NW) heterojunctions, as well as InAs and InP homojunctions composed of different structural arrangements, zinc-blend (zb) and wurtzite (w). For InAs/InP NW heterojunctions our results indicate that w and zb NW heterojunctions are quite similar, energetically, for thin NWs. We also examined the robustness of the abrupt interface through an atomic As↔P swap at the InAs/InP interface. Our results support the formation of abrupt (non-abrupt) interfaces in w (zb) InAs/InP heterojunctions. Concerning InAs/InP NW-SLs, our results indicate a type-I band alignment, with the energy barrier at the InP layers, in accordance with experimental works. For InAs or InP zb/w homojunctions, we also found a type-I band alignment for thin NWs, however, on increasing the NW diameter both InAs and InP homojunctions exhibit a type-II band alignment.

Optical properties of Sulfur doped InP single crystals

Science.gov (United States)

El-Nahass, M. M.; Youssef, S. B.; Ali, H. A. M.

2014-05-01

Optical properties of InP:S single crystals were investigated using spectrophotometric measurements in the spectral range of 200-2500 nm. The absorption coefficient and refractive index were calculated. It was found that InP:S crystals exhibit allowed and forbidden direct transitions with energy gaps of 1.578 and 1.528 eV, respectively. Analysis of the refractive index in the normal dispersion region was discussed in terms of the single oscillator model. Some optical dispersion parameters namely: the dispersion energy (Ed), single oscillator energy (Eo), high frequency dielectric constant (ɛ∞), and lattice dielectric constant (ɛL) were determined. The volume and the surface energy loss functions (VELF & SELF) were estimated. Also, the real and imaginary parts of the complex conductivity were calculated.

Effects of mask imperfections on InP etching profiles

International Nuclear Information System (INIS)

Huo, D.T.C.; Yan, M.F.; Wynn, J.D.; Wilt, D.P.

1990-01-01

The authors have demonstrated that the quality of etch masks has a significant effect on the InP etching profiles. In particular, the authors have shown that mask imperfections can cause defective etching profiles, such as vertical sidewalls and extra mask undercutting in InP. The authors also discovered that the geometry of these defective profiles is determined by the orientation of the substrate relative to the direction of the mask imperfections. Along a left-angle 110 right-angle line mask defect, the downward etching process changes the left-angle 110 right-angle v-grooves to vertical sidewalls without extra undercutting. For v-grooves aligned along the left-angle 110 right-angle direction, defects on the mask give a significant extra undercutting without changing the etching profile

Enhanced monolayer MoS2/InP heterostructure solar cells by graphene quantum dots

Science.gov (United States)

Wang, Peng; Lin, Shisheng; Ding, Guqiao; Li, Xiaoqiang; Wu, Zhiqian; Zhang, Shengjiao; Xu, Zhijuan; Xu, Sen; Lu, Yanghua; Xu, Wenli; Zheng, Zheyang

2016-04-01

We demonstrate significantly improved photovoltaic response of monolayer molybdenum disulfide (MoS2)/indium phosphide (InP) van der Waals heterostructure induced by graphene quantum dots (GQDs). Raman and photoluminescence measurements indicate that effective charge transfer takes place between GQDs and MoS2, which results in n-type doping of MoS2. The doping effect increases the barrier height at the MoS2/InP heterojunction, thus the averaged power conversion efficiency of MoS2/InP solar cells is improved from 2.1% to 4.1%. The light induced doping by GQD provides a feasible way for developing more efficient MoS2 based heterostructure solar cells.

Band gap and band offset of (GaIn)(PSb) lattice matched to InP

Science.gov (United States)

Köhler, F.; Böhm, G.; Meyer, R.; Amann, M.-C.

2005-07-01

Metastable (GaxIn1-x)(PySb1-y) layers were grown on (001) InP substrates by gas source molecular beam epitaxy. Low-temperature photoluminescence spectroscopy was applied to these heterostructures and revealed spatially indirect band-to-band recombination of electrons localized in the InP with holes in the (GaxIn1-x)(PySb1-y). In addition, samples with layer thicknesses larger than 100nm showed direct PL across the band gap of (GaxIn1-x)(PySb1-y). Band-gap energies and band offset energies of (GaxIn1-x)(PySb1-y) relative to InP were derived from these PL data. A strong bowing parameter was observed.

Dielectric properties of semi-insulating Fe-doped InP in the terahertz spectral region.

Science.gov (United States)

Alyabyeva, L N; Zhukova, E S; Belkin, M A; Gorshunov, B P

2017-08-04

We report the values and the spectral dependence of the real and imaginary parts of the dielectric permittivity of semi-insulating Fe-doped InP crystalline wafers in the 2-700 cm -1 (0.06-21 THz) spectral region at room temperature. The data shows a number of absorption bands that are assigned to one- and two-phonon and impurity-related absorption processes. Unlike the previous studies of undoped or low-doped InP material, our data unveil the dielectric properties of InP that are not screened by strong free-carrier absorption and will be useful for designing a wide variety of InP-based electronic and photonic devices operating in the terahertz spectral range.

Molecular beam epitaxy of InxGa1-xAs on InP (100) substrates

International Nuclear Information System (INIS)

Dvoryankina, G.G.; Dvoryankin, V.F.; Petrov, A.G.; Kudryashov, A.A.; Khusid, L.B.

1991-01-01

Heteroepitaxy layers of In x Ga 1-x As in the wide field of compositions (x=0.2-0.8) of 0.2-2.0 μm thick on (100) InP substrates were grown using the methods of epitaxy from molecular beams. Structure, surface morphology and electric properties of layers in relation to their thick and composition were investigated. It was shown that the quality of In x Ga 1-x As layers on (100) InP was more sensitive to tensile strain than compressive strain. Different mechanisms of scattering of free electrons in layers of In x Ga 1-x As(x∼=0.53) on (101) InP were considered

Carrier removal and defect behavior in p-type InP

Science.gov (United States)

Weinberg, I.; Swartz, C. K.; Drevinsky, P. J.

1992-01-01

A simple expression, obtained from the rate equation for defect production, was used to relate carrier removal to defect production and hole trapping rates in p-type InP after irradiation by 1-MeV electrons. Specific contributions to carrier removal from defect levels H3, H4, and H5 were determined from combined deep-level transient spectroscopy (DLTS) and measured carrier concentrations. An additional contribution was attributed to one or more defects not observed by the present DLTS measurements. The high trapping rate observed for H5 suggests that this defect, if present in relatively high concentration, could be dominant in p-type InP.

Effect of Zinc Incorporation on the Performance of Red Light Emitting InP Core Nanocrystals.

Science.gov (United States)

Xi, Lifei; Cho, Deok-Yong; Besmehn, Astrid; Duchamp, Martial; Grützmacher, Detlev; Lam, Yeng Ming; Kardynał, Beata E

2016-09-06

This report presents a systematic study on the effect of zinc (Zn) carboxylate precursor on the structural and optical properties of red light emitting InP nanocrystals (NCs). NC cores were assessed using X-ray photoelectron spectroscopy (XPS), X-ray absorption spectroscopy (XAS), energy-dispersive X-ray spectroscopy (EDX), and high-resolution transmission electron microscopy (HRTEM). When moderate Zn:In ratios in the reaction pot were used, the incorporation of Zn in InP was insufficient to change the crystal structure or band gap of the NCs, but photoluminescence quantum yield (PLQY) increased dramatically compared with pure InP NCs. Zn was found to incorporate mostly in the phosphate layer on the NCs. PL, PLQY, and time-resolved PL (TRPL) show that Zn carboxylates added to the precursors during NC cores facilitate the synthesis of high-quality InP NCs by suppressing nonradiative and sub-band-gap recombination, and the effect is visible also after a ZnS shell is grown on the cores.

Defects in mitophagy promote redox-driven metabolic syndrome in the absence of TP53INP1.

Science.gov (United States)

Seillier, Marion; Pouyet, Laurent; N'Guessan, Prudence; Nollet, Marie; Capo, Florence; Guillaumond, Fabienne; Peyta, Laure; Dumas, Jean-François; Varrault, Annie; Bertrand, Gyslaine; Bonnafous, Stéphanie; Tran, Albert; Meur, Gargi; Marchetti, Piero; Ravier, Magalie A; Dalle, Stéphane; Gual, Philippe; Muller, Dany; Rutter, Guy A; Servais, Stéphane; Iovanna, Juan L; Carrier, Alice

2015-06-01

The metabolic syndrome covers metabolic abnormalities including obesity and type 2 diabetes (T2D). T2D is characterized by insulin resistance resulting from both environmental and genetic factors. A genome-wide association study (GWAS) published in 2010 identified TP53INP1 as a new T2D susceptibility locus, but a pathological mechanism was not identified. In this work, we show that mice lacking TP53INP1 are prone to redox-driven obesity and insulin resistance. Furthermore, we demonstrate that the reactive oxygen species increase in TP53INP1-deficient cells results from accumulation of defective mitochondria associated with impaired PINK/PARKIN mitophagy. This chronic oxidative stress also favors accumulation of lipid droplets. Taken together, our data provide evidence that the GWAS-identified TP53INP1 gene prevents metabolic syndrome, through a mechanism involving prevention of oxidative stress by mitochondrial homeostasis regulation. In conclusion, this study highlights TP53INP1 as a molecular regulator of redox-driven metabolic syndrome and provides a new preclinical mouse model for metabolic syndrome clinical research. © 2015 The Authors. Published under the terms of the CC BY 4.0 license.

Die Energiesicherheit Europas in Bezug auf Erdgas und die Auswirkungen einer Kartellbildung im Gassektor

OpenAIRE

Krämer, Luis-Martín

2011-01-01

Die Dissertation untersucht die aktuelle Sicherheit der europaeischen Erdgasversorgung. Sie beruecksichtigt zudem die moeglichen Auswirkungen einer Kartellbildung auf die europaeische Gasversorgungssicherheit. Die Arbeit besteht aus einer detaillierten empirischen Studie und darauf aufbauender Szenarioanalyse. Hierzu wird auf den Interdependenzansatz von Robert O. Keohane und Joseph Nye zurueckgegriffen. Zur Darstellung des komplexen Themenbereichs wird auf die Darstellungspraxis der Dichten ...

[Managment system in safety and health at work organization. An Italian example in public sector: Inps].

Science.gov (United States)

Di Loreto, G; Felicioli, G

2010-01-01

The Istituto Nazionale della Previdenza Sociale (Inps) is one of the biggest Public Sector organizations in Italy; about 30.000 people work in his structures. Fifteen years ago, Inps launched a long term project with the objective to create a complex and efficient safety and health at work organization. Italian law contemplates a specific kind of physician working on safety and health at work, called "Medico competente", and 85 Inps's physicians work also as "Medico competente". This work describes how IT improved coordination and efficiency in this occupational health's management system.

Time-of-flight neutron diffraction investigation of temperature factors in the Zn blende semiconductor InP

International Nuclear Information System (INIS)

Ferrari, C.; Bocchi, C.; Fornari, R.; Moze, O.; Wilson, C.C.

1992-01-01

A structural investigation of the Zn blende structure semiconductor InP has been carried out using the single crystal diffractometer SXD at the pulsed neutron facility ISIS. The ability to measure structure factors accurately at large Q values even with highly absorbing materials such as InP is demonstrated. Measurements were performed on a single crystal of InP at 293, 100 and 50 K with the crystallographic axis mounted perpendicular to the scattering plane. This enabled collection of (hhl) reflections up to a maximum with Miller indices (10, 10, 8). (orig.)

AFM observation of OMVPE-grown ErP on InP substrates using a new organometal tris(ethylcyclopentadienyl)erbium (Er(EtCp)3)

International Nuclear Information System (INIS)

Akane, T.; Jinno, S.; Yang, Y.; Kuno, T.; Hirata, T.; Isogai, Y.; Watanabe, N.; Fujiwara, Y.; Nakamura, A.; Takeda, Y.

2003-01-01

ErP has been grown on InP(0 0 1) substrates by organometallic vapor phase epitaxy (OMVPE) using a new liquid organic Er source: tris(ethylcyclopentadienyl)erbium (Er(EtCp) 3 ). Morphological change of an ErP layer on InP(0 0 1) is investigated together with that of an overgrown capping InP layer. Optimum growth condition of InP causes islanding on over-monolayer-ErP. A relatively low overgrowth temperature of InP is a key factor for attaining complete capping coverage on ErP

Bandgap Engineering of InP QDs Through Shell Thickness and Composition

Energy Technology Data Exchange (ETDEWEB)

Dennis, Allison M. [Los Alamos National Laboratory; Mangum, Benjamin D. [Los Alamos National Laboratory; Piryatinski, Andrei [Los Alamos National Laboratory; Park, Young-Shin [Los Alamos National Laboratory; Htoon, Han [Los Alamos National Laboratory; Hollingsworth, Jennifer A. [Los Alamos National Laboratory

2012-06-21

Fields as diverse as biological imaging and telecommunications utilize the unique photophysical and electronic properties of nanocrystal quantum dots (NQDs). The development of new NQD compositions promises material properties optimized for specific applications, while addressing material toxicity. Indium phosphide (InP) offers a 'green' alternative to the traditional cadmium-based NQDs, but suffers from extreme susceptibility to oxidation. Coating InP cores with more stable shell materials significantly improves nanocrystal resistance to oxidation and photostability. We have investigated several new InP-based core-shell compositions, correlating our results with theoretical predictions of their optical and electronic properties. Specifically, we can tailor the InP core-shell QDs to a type-I, quasi-type-II, or type-II bandgap structure with emission wavelengths ranging from 500-1300 nm depending on the shell material used (ZnS, ZnSe, CdS, or CdSe) and the thickness of the shell. Single molecule microscopy assessments of photobleaching and blinking are used to correlate NQD properties with shell thickness.

Coupling between magnetic and optical properties of stable Au-Fe solid solution nanoparticles

Energy Technology Data Exchange (ETDEWEB)

De Julian Fernandez, C; Novak, R L; Bogani, L; Caneschi, A [INSTM RU at the Department of Chemistry of the University of Firenze, via della Lastruccia 3, 50019 Sesto Fiorentino (Italy); Mattei, G; Mazzoldi, P [Department of Physics, CNISM and University of Padova, via Marzolo 8, 35131 Padova (Italy); Paz, E; Palomares, F J [Instituto de Ciencia de Materiales de Madrid (CSIC), Cantoblanco, 28049 Madrid (Spain); Cavigli, L, E-mail: cesar.dejulian@unifi.it [Department of Physics-LENS, University of Florence, via Sansone 1, 50019 Sesto Fiorentino (Italy)

2010-04-23

Au-Fe nanoparticles constitute one of the simplest prototypes of a multifunctional nanomaterial that can exhibit both magnetic and optical (plasmonic) properties. This solid solution, not feasible in the bulk phase diagram in thermal equilibrium, can be formed as a nanostructure by out-of-equilibrium processes. Here, the novel magnetic, optical and magneto-optical properties of ion-implanted Au-Fe solid solution nanoparticles dispersed in a SiO{sub 2} matrix are investigated and correlated. The surface plasmon resonance of the Au-Fe nanoparticles with almost equicomposition is strongly damped when compared to pure Au and to Au-rich Au-Fe nanoparticles. In all cases, the Au atoms are magnetically polarized, as measured by x-ray magnetic circular dichroism, and ferromagnetically coupled with Fe atoms. Although the chemical stability of Au-Fe nanoparticles is larger than that of Fe nanoparticles, both the magnetic moment per Fe atom and the order temperature are smaller. These results suggest that electronic and magnetic properties are more influenced by the hybridization of the electronic bands in the Au-Fe solid solution than by size effects. On the other hand, the magneto-optical transitions allowed in the vis-nIR spectral regions are very similar. In addition, we also observe, after studying the properties of thermally treated samples, that the Au-Fe alloy is stabilized, not by surface effects, but by the combination of the out-of-equilibrium nature of the ion implantation technique and by changes in the properties due to size effects.

Coupling between magnetic and optical properties of stable Au-Fe solid solution nanoparticles

International Nuclear Information System (INIS)

De Julian Fernandez, C; Novak, R L; Bogani, L; Caneschi, A; Mattei, G; Mazzoldi, P; Paz, E; Palomares, F J; Cavigli, L

2010-01-01

Au-Fe nanoparticles constitute one of the simplest prototypes of a multifunctional nanomaterial that can exhibit both magnetic and optical (plasmonic) properties. This solid solution, not feasible in the bulk phase diagram in thermal equilibrium, can be formed as a nanostructure by out-of-equilibrium processes. Here, the novel magnetic, optical and magneto-optical properties of ion-implanted Au-Fe solid solution nanoparticles dispersed in a SiO 2 matrix are investigated and correlated. The surface plasmon resonance of the Au-Fe nanoparticles with almost equicomposition is strongly damped when compared to pure Au and to Au-rich Au-Fe nanoparticles. In all cases, the Au atoms are magnetically polarized, as measured by x-ray magnetic circular dichroism, and ferromagnetically coupled with Fe atoms. Although the chemical stability of Au-Fe nanoparticles is larger than that of Fe nanoparticles, both the magnetic moment per Fe atom and the order temperature are smaller. These results suggest that electronic and magnetic properties are more influenced by the hybridization of the electronic bands in the Au-Fe solid solution than by size effects. On the other hand, the magneto-optical transitions allowed in the vis-nIR spectral regions are very similar. In addition, we also observe, after studying the properties of thermally treated samples, that the Au-Fe alloy is stabilized, not by surface effects, but by the combination of the out-of-equilibrium nature of the ion implantation technique and by changes in the properties due to size effects.

Coupling between magnetic and optical properties of stable Au-Fe solid solution nanoparticles

Science.gov (United States)

de Julián Fernández, C.; Mattei, G.; Paz, E.; Novak, R. L.; Cavigli, L.; Bogani, L.; Palomares, F. J.; Mazzoldi, P.; Caneschi, A.

2010-04-01

Au-Fe nanoparticles constitute one of the simplest prototypes of a multifunctional nanomaterial that can exhibit both magnetic and optical (plasmonic) properties. This solid solution, not feasible in the bulk phase diagram in thermal equilibrium, can be formed as a nanostructure by out-of-equilibrium processes. Here, the novel magnetic, optical and magneto-optical properties of ion-implanted Au-Fe solid solution nanoparticles dispersed in a SiO2 matrix are investigated and correlated. The surface plasmon resonance of the Au-Fe nanoparticles with almost equicomposition is strongly damped when compared to pure Au and to Au-rich Au-Fe nanoparticles. In all cases, the Au atoms are magnetically polarized, as measured by x-ray magnetic circular dichroism, and ferromagnetically coupled with Fe atoms. Although the chemical stability of Au-Fe nanoparticles is larger than that of Fe nanoparticles, both the magnetic moment per Fe atom and the order temperature are smaller. These results suggest that electronic and magnetic properties are more influenced by the hybridization of the electronic bands in the Au-Fe solid solution than by size effects. On the other hand, the magneto-optical transitions allowed in the vis-nIR spectral regions are very similar. In addition, we also observe, after studying the properties of thermally treated samples, that the Au-Fe alloy is stabilized, not by surface effects, but by the combination of the out-of-equilibrium nature of the ion implantation technique and by changes in the properties due to size effects.

Band Offsets and Interfacial Properties of HfAlO Gate Dielectric Grown on InP by Atomic Layer Deposition.

Science.gov (United States)

Yang, Lifeng; Wang, Tao; Zou, Ying; Lu, Hong-Liang

2017-12-01

X-ray photoelectron spectroscopy and high-resolution transmission electron microscopy have been used to determine interfacial properties of HfO 2 and HfAlO gate dielectrics grown on InP by atomic layer deposition. An undesirable interfacial InP x O y layer is easily formed at the HfO 2 /InP interface, which can severely degrade the electrical performance. However, an abrupt interface can be achieved when the growth of the HfAlO dielectric on InP starts with an ultrathin Al 2 O 3 layer. The valence and conduction band offsets for HfAlO/InP heterojunctions have been determined to be 1.87 ± 0.1 and 2.83 ± 0.1 eV, respectively. These advantages make HfAlO a potential dielectric for InP MOSFETs.

Switching dynamics in InP photonic-crystal nanocavity

DEFF Research Database (Denmark)

Yu, Yi; Palushani, Evarist; Heuck, Mikkel

2016-01-01

In this paper, we presented switching dynamic investigations on an InP photonic-crystal (PhC) nanocavity structure using homodyne pump-probe measurements. The measurements were compared with simulations based on temporal nonlinear coupled mode theory and carrier rate equations for the dynamics of...

InP solar cell with window layer

Science.gov (United States)

Jain, Raj K. (Inventor); Landis, Geoffrey A. (Inventor)

1994-01-01

The invention features a thin light transmissive layer of the ternary semiconductor indium aluminum arsenide (InAlAs) as a front surface passivation or 'window' layer for p-on-n InP solar cells. The window layers of the invention effectively reduce front surface recombination of the object semiconductors thereby increasing the efficiency of the cells.

Lattice location of diffused Zn atoms in GaAs and InP single crystals

International Nuclear Information System (INIS)

Chan, L.Y.; Yu, K.M.; Ben-Tzur, M.; Haller, E.E.; Jaklevic, J.M.; Walukiewicz, W.; Hanson, C.M.

1991-01-01

We have investigated the saturation phenomenon of the free carrier concentration in p-type GaAs and InP single crystals doped by zinc diffusion. The free hole saturation occurs at 10 20 cm -3 for GaAs, but the maximum concentration for InP appears at mid 10 18 cm -3 . The difference in the saturation hole concentrations for these materials is investigated by studying the incorporation and the lattice location of the impurity zinc, an acceptor when located on a group III atom site. Zinc is diffused into the III-V wafers in a sealed quartz ampoule. Particle-induced x-ray emission with ion-channeling techniques are employed to determine the exact lattice location of the zinc atoms. We have found that over 90% of all zinc atoms occupy Ga sites in the diffused GaAs samples, while for the InP case, the zinc substitutionality is dependent on the cooling rate of the sample after high-temperature diffusion. For the slowly cooled sample, a large fraction (∼90%) of the zinc atoms form random precipitates of Zn 3 P 2 and elemental Zn. However, when rapidly cooled only 60% of the zinc forms such precipitates while the rest occupies specific sites in the InP. We analyze our results in terms of the amphoteric native defect model. We show that the difference in the electrical activity of the Zn atoms in GaAs and InP is a consequence of the different location of the Fermi level stabilization energy in these two materials

19.2% Efficient InP Heterojunction Solar Cell with Electron-Selective TiO2 Contact.

Science.gov (United States)

Yin, Xingtian; Battaglia, Corsin; Lin, Yongjing; Chen, Kevin; Hettick, Mark; Zheng, Maxwell; Chen, Cheng-Ying; Kiriya, Daisuke; Javey, Ali

2014-12-17

We demonstrate an InP heterojunction solar cell employing an ultrathin layer (∼10 nm) of amorphous TiO 2 deposited at 120 °C by atomic layer deposition as the transparent electron-selective contact. The TiO 2 film selectively extracts minority electrons from the conduction band of p-type InP while blocking the majority holes due to the large valence band offset, enabling a high maximum open-circuit voltage of 785 mV. A hydrogen plasma treatment of the InP surface drastically improves the long-wavelength response of the device, resulting in a high short-circuit current density of 30.5 mA/cm 2 and a high power conversion efficiency of 19.2%.

Radiation defects in electron-irradiated InP crystals

International Nuclear Information System (INIS)

Brailovskii, E.Yu.; Karapetyan, F.K.; Megela, I.G.; Tartachnik, V.P.

1982-01-01

The results are presented of formation and annealing of defects in InP crystals at 1 to 50 MeV electron irradiation. The recovery of electrical properties in the range of 77 to 970 K during annealing processes is studied. Five low temperature annealing states in n-InP and the reverse annealing in p-InP are observed at 77 to 300 K. Four annealing stages at temperatures higher than 300 K are present. When the electron energy is increased more complicated thermostable defects are formed, and at 50 MeV electron energy besides of the point defect clusters are formed, which anneal at temperatures of 800 to 970 K. It is shown that the peculiarities of the Hall mobility at irradiation and annealing are caused by the scattering centres E/sub c/ - 0.2 eV. The 'limiting' position of the Fermi level in electron irradiated InP crystals is discussed. (author)

Radiation defects in electron-irradiated InP crystals

Energy Technology Data Exchange (ETDEWEB)

Brailovskii, E.Yu.; Karapetyan, F.K.; Megela, I.G.; Tartachnik, V.P. (AN Ukrainskoj SSR, Kiev. Inst. Yadernykh Issledovanij)

1982-06-16

The results are presented of formation and annealing of defects in InP crystals at 1 to 50 MeV electron irradiation. The recovery of electrical properties in the range of 77 to 970 K during annealing processes is studied. Five low temperature annealing states in n-InP and the reverse annealing in p-InP are observed at 77 to 300 K. Four annealing stages at temperatures higher than 300 K are present. When the electron energy is increased more complicated thermostable defects are formed, and at 50 MeV electron energy besides of the point defect clusters are formed, which anneal at temperatures of 800 to 970 K. It is shown that the peculiarities of the Hall mobility at irradiation and annealing are caused by the scattering centres E/sub c/ - 0.2 eV. The 'limiting' position of the Fermi level in electron irradiated InP crystals is discussed.

Design and modeling of InP DHBT power amplifiers at millimeter-wave frequencies

DEFF Research Database (Denmark)

Yan, Lei; Johansen, Tom K.

2012-01-01

In this paper, the design and modeling of InP DHBT based millimeter-wave(mm-wave) power amplifiers is described. This includes the modeling of InP DHBT devices and layout parasitics. An EM-circuit co-simulation approach is described to allow all parasitics to be modeled for accurate circuit...... demonstrates a power gain of 4.5dB with a saturated output power of 14.2dBm at 69.2GHz. © 2012 European Microwave Assoc....

Inverse metal-assisted chemical etching produces smooth high aspect ratio InP nanostructures.

Science.gov (United States)

Kim, Seung Hyun; Mohseni, Parsian K; Song, Yi; Ishihara, Tatsumi; Li, Xiuling

2015-01-14

Creating high aspect ratio (AR) nanostructures by top-down fabrication without surface damage remains challenging for III-V semiconductors. Here, we demonstrate uniform, array-based InP nanostructures with lateral dimensions as small as sub-20 nm and AR > 35 using inverse metal-assisted chemical etching (I-MacEtch) in hydrogen peroxide (H2O2) and sulfuric acid (H2SO4), a purely solution-based yet anisotropic etching method. The mechanism of I-MacEtch, in contrast to regular MacEtch, is explored through surface characterization. Unique to I-MacEtch, the sidewall etching profile is remarkably smooth, independent of metal pattern edge roughness. The capability of this simple method to create various InP nanostructures, including high AR fins, can potentially enable the aggressive scaling of InP based transistors and optoelectronic devices with better performance and at lower cost than conventional etching methods.

Formation of nanogaps in InAs nanowires by selectively etching embedded InP segments.

Science.gov (United States)

Schukfeh, M I; Storm, K; Hansen, A; Thelander, C; Hinze, P; Beyer, A; Weimann, T; Samuelson, L; Tornow, M

2014-11-21

We present a method to fabricate nanometer scale gaps within InAs nanowires by selectively etching InAs/InP heterostructure nanowires. We used vapor-liquid-solid grown InAs nanowires with embedded InP segments of 10-60 nm length and developed an etching recipe to selectively remove the InP segment. A photo-assisted wet etching process in a mixture of acetic acid and hydrobromic acid gave high selectivity, with accurate removal of InP segments down to 20 nm, leaving the InAs wire largely unattacked, as verified using scanning electron and transmission electron microscopy. The obtained nanogaps in InAs wires have potential as semiconducting electrodes to investigate electronic transport in nanoscale objects. We demonstrate this functionality by dielectrophoretically trapping 30 nm diameter gold nanoparticles into the gap.

Formation of nanogaps in InAs nanowires by selectively etching embedded InP segments

International Nuclear Information System (INIS)

Schukfeh, M I; Hansen, A; Tornow, M; Storm, K; Thelander, C; Samuelson, L; Hinze, P; Weimann, T; Beyer, A

2014-01-01

We present a method to fabricate nanometer scale gaps within InAs nanowires by selectively etching InAs/InP heterostructure nanowires. We used vapor–liquid–solid grown InAs nanowires with embedded InP segments of 10–60 nm length and developed an etching recipe to selectively remove the InP segment. A photo-assisted wet etching process in a mixture of acetic acid and hydrobromic acid gave high selectivity, with accurate removal of InP segments down to 20 nm, leaving the InAs wire largely unattacked, as verified using scanning electron and transmission electron microscopy. The obtained nanogaps in InAs wires have potential as semiconducting electrodes to investigate electronic transport in nanoscale objects. We demonstrate this functionality by dielectrophoretically trapping 30 nm diameter gold nanoparticles into the gap. (paper)

Segregation of antimony in InP in MOVPE

Energy Technology Data Exchange (ETDEWEB)

Weeke, Stefan

2008-07-01

In this work the segregation of antimony in indium phosphide in metal organic vapour phase epitaxy (MOVPE)was systematically investigated. Therefore phosphine stabilized InP surfaces were treated with tri-methyl-antimony (TMSb) in MOVPE. An antimony rich Sb/InP surface was established, showing a typical spectra for the antimonides observed in reflectance anisotropy spectroscopy (RAS).Adsorption and desorption of antimony are investigated, as well as the incorporation of Sb during overgrowth of the Sb/InP surface with InP. Therefore the growth parameters temperature, TMSb partial pressure and treatment time are varied and their influence investigated. The experiments are monitored in-situ with RAS, the achieved data is correlated with ex-situ characterisation such as X-ray diffraction (XRD) and secondary ion mass spectroscopy (SIMS). It is shown that under treatment with TMSb a stable Sb/InP surface is formed within seconds, which does not change under further TMSb treatment. This process is rarely influenced by the TMSb partial pressure. On the contrary, the desorption of Sb is a very slow process. Two main processes can be distinguished: The desorption of excess Sb from the surface and the formation of the MOVPE prepared InP (2 x 1) surface. The reaction velocity of adsorption and desorption increases with temperature. Above a critical value the increase of TMSb partial pressure has no influence on the time for desorption. During overgrowth of the Sb/InP surface the opposite temperature dependence is observed: with increasing growth temperature the typical spectra for antimonides is observed longer. An analysis of the grown samples with XRD and SIMS showed the formation of an InPSb double quantum well. One layer is formed at the interface, the second one 50 nm-120 nm deep in the InP. The location of the 2nd InPSb layer can be correlated with the vanishing of the Sb signature in RAS. The distance between the quantum wells increases with growth temperature, until it

Segregation of antimony in InP in MOVPE

International Nuclear Information System (INIS)

Weeke, Stefan

2008-01-01

In this work the segregation of antimony in indium phosphide in metal organic vapour phase epitaxy (MOVPE)was systematically investigated. Therefore phosphine stabilized InP surfaces were treated with tri-methyl-antimony (TMSb) in MOVPE. An antimony rich Sb/InP surface was established, showing a typical spectra for the antimonides observed in reflectance anisotropy spectroscopy (RAS).Adsorption and desorption of antimony are investigated, as well as the incorporation of Sb during overgrowth of the Sb/InP surface with InP. Therefore the growth parameters temperature, TMSb partial pressure and treatment time are varied and their influence investigated. The experiments are monitored in-situ with RAS, the achieved data is correlated with ex-situ characterisation such as X-ray diffraction (XRD) and secondary ion mass spectroscopy (SIMS). It is shown that under treatment with TMSb a stable Sb/InP surface is formed within seconds, which does not change under further TMSb treatment. This process is rarely influenced by the TMSb partial pressure. On the contrary, the desorption of Sb is a very slow process. Two main processes can be distinguished: The desorption of excess Sb from the surface and the formation of the MOVPE prepared InP (2 x 1) surface. The reaction velocity of adsorption and desorption increases with temperature. Above a critical value the increase of TMSb partial pressure has no influence on the time for desorption. During overgrowth of the Sb/InP surface the opposite temperature dependence is observed: with increasing growth temperature the typical spectra for antimonides is observed longer. An analysis of the grown samples with XRD and SIMS showed the formation of an InPSb double quantum well. One layer is formed at the interface, the second one 50 nm-120 nm deep in the InP. The location of the 2nd InPSb layer can be correlated with the vanishing of the Sb signature in RAS. The distance between the quantum wells increases with growth temperature, until it

Amorphization of Ge and InP studied using nuclear hyperfine methods

International Nuclear Information System (INIS)

Byrne, A.P.; Bezakova, E.; Glover, C.J.; Ridgway, M.C.

1999-01-01

The ion beam amorphization of InP and Ge has been studied using the Perturbed Angular Correlation (PAC) technique. Semiconductor samples were preimplanted with the radioisotope 111 In using a direct production-recoil implantation method and beams from the ANU Heavy-ion Facility. Following annealing samples were amorphized using Ge beams with doses between 2 x 10 12 ion/cm 2 and 5000 x 10 12 ion/cm 2 . For InP the PAC spectra identified three distinct regimes, crystalline, disordered and amorphous environments, with a smooth transition observed as a function of dose. The dose dependence of the relative fractions of the individual probe environments has been determined. A direct amorphization process consistent with the overlap model was quantified and evidence for a second amorphization process via the overlap of disordered regions was observed. The PAC method compares favorably with other methods used in its ability to differentiate changes at high dose. The results for InP will be compared with those in Ge. The implantation method will be discussed, as will developments in the establishment of a dedicated facility for the implantation of radioisotopes

Ultra-Fast Low Energy Switching Using an InP Photonic Crystal H0 Nanocavity

DEFF Research Database (Denmark)

Yu, Yi; Palushani, Evarist; Heuck, Mikkel

2013-01-01

Pump-probe measurements on InP photonic crystal H0 nanocavities show large-contrast ultrafast switching at low pulse energy. For large pulse energies, high-frequency carrier density oscillations are induced, leading to pulsesplitting.......Pump-probe measurements on InP photonic crystal H0 nanocavities show large-contrast ultrafast switching at low pulse energy. For large pulse energies, high-frequency carrier density oscillations are induced, leading to pulsesplitting....

The lower yield point of InP and GaAs

International Nuclear Information System (INIS)

Siethoff, H.

1987-01-01

A study of the strain-rate and temperature dependence of the lower yield stress (τ ly ) in undoped InP and of the strain-rate dependence of τ ly in undoped and Zn-doped GaAs is reported. The deformation along (123) orientation was carried out in compression at constant strain rates ranging from 10 -5 to 10 -2 s -1 . The temperature range extended from 540 to 780 0 C. The activation energy and stress exponent of the dislocation velocity were calculated. Experiments have shown that τ ly of InP depends on temperature and strain rate in a manner similar to other semiconductors like Si and InSb, whereas τ ly of GaAs shows an unusual strain-rate dependence

[The Detection of Ultra-Broadband Terahertz Spectroscopy of InP Wafer by Using Coherent Heterodyne Time-Domain Spectrometer].

Science.gov (United States)

Zhang, Liang-liang; Zhang, Rui; Xu, Xiao-yan; Zhang, Cun-lin

2016-02-01

Indium Phosphide (InP) has attracted great physical interest because of its unique characteristics and is indispensable to both optical and electronic devices. However, the optical property of InP in the terahertz range (0. 110 THz) has not yet been fully characterized and systematically studied. The former researches about the properties of InP concentrated on the terahertz frequency between 0.1 and 4 THz. The terahertz optical properties of the InP in the range of 4-10 THz are still missing. It is fairly necessary to fully understand its properties in the entire terahertz range, which results in a better utilization as efficient terahertz devices. In this paper, we study the optical properties of undoped (100) InP wafer in the ultra-broad terahertz frequency range (0.5-18 THz) by using air-biased-coherent-detection (ABCD) system, enabling the coherent detection of terahertz wave in gases, which leads to a significant improvement on the dynamic range and sensitivity of the system. The advantage of this method is broad frequency bandwidth from 0.2 up to 18 THz which is only mainly limited by laser pulse duration since it uses ionized air as terahertz emitter and detector instead of using an electric optical crystal or photoconductive antenna. The terahertz pulse passing through the InP wafer is delayed regarding to the reference pulse and has much lower amplitude. In addition, the frequency spectrum amplitude of the terahertz sample signal drops to the noise floor level from 6.7 to 12.1 THz. At the same time InP wafer is opaque at the frequencies spanning from 6.7 to 12.1 THz. In the frequency regions of 0.8-6.7 and 12.1-18 THz it has relativemy low absorption coefficient. Meanwhile, the refractive index increases monotonously in the 0.8-6.7 THz region and 12.1-18 THz region. These findings will contribute to the design of InP based on nonlinear terahertz devices.

Der Einfluss des mikrovaskulären Systems auf das Überleben eines Hauttransplantats

OpenAIRE

Motsch, Benjamin

2017-01-01

Transplantierte Organe benötigen eine zuverlässige Versorgung über das Gefäßsystem. Daher richtet diese Studie ihr Augenmerk darauf, ob eine Hemmung von Thrombozyten, sowohl allein als auch in Kombination mit einem mTOR-Hemmer, einen positiven Effekt auf die Ausprägung der mikrovaskulären Struktur in Hauttransplantaten bei einem allogenen Mausmodell hat. Für die Hauttransplantation wurde die Haut von C57BL6 (H-2b) als Spendertiere auf CBA/J(H-2k) Mäuse übertragen. Auf diese Weise wurde eine v...

Positive Effekte des Mindestlohns auf Arbeitsplatzqualität und Arbeitszufriedenheit

OpenAIRE

Pusch, Toralf; Rehm, Miriam

2017-01-01

Über den Zusammenhang zwischen Mindestlöhnen und Änderungen bei der Arbeitsplatzqualität ist bisher wenig bekannt. Nach der Mindestlohneinführung in Deutschland stieg die Arbeitsplatzzufriedenheit insgesamt. Neben höheren Stunden- und Bruttolöhnen und verringerten Arbeitszeiten gibt es als möglichen Grund auch eine arbeitsorganisatorische Aufwertung der Arbeitsplätze. Bei bestehenden Beschäftigungsverhältnissen konnten Hinweise auf Verbesserungen beim Betriebsklima und einer mehr auf Mitarbei...

Determination of the spin orbit coupling and crystal field splitting in wurtzite InP by polarization resolved photoluminescence

Science.gov (United States)

Chauvin, Nicolas; Mavel, Amaury; Jaffal, Ali; Patriarche, Gilles; Gendry, Michel

2018-02-01

Excitation photoluminescence spectroscopy is usually used to extract the crystal field splitting (ΔCR) and spin orbit coupling (ΔSO) parameters of wurtzite (Wz) InP nanowires (NWs). However, the equations expressing the valence band splitting are symmetric with respect to these two parameters, and a choice ΔCR > ΔSO or ΔCR InP NWs grown on silicon. The experimental results combined with a theoretical model and finite difference time domain calculations allow us to conclude that ΔCR > ΔSO in Wz InP.

1990's annual report of INPE's Plasma Associated Laboratory

International Nuclear Information System (INIS)

1991-06-01

This is the 1990's annual report of INPE's Plasma Associated Laboratory it contains information on current research developed at the laboratory including quiescent plasma, magnetized plasma, plasma centrifuge, plasma and radiation (gyrotron), ionic propulsion, and toroidal plasma. (A.C.A.S.)

Pressure-Dependent Photoluminescence Study of Wurtzite InP Nanowires.

Science.gov (United States)

Chauvin, Nicolas; Mavel, Amaury; Patriarche, Gilles; Masenelli, Bruno; Gendry, Michel; Machon, Denis

2016-05-11

The elastic properties of InP nanowires are investigated by photoluminescence measurements under hydrostatic pressure at room temperature and experimentally deduced values of the linear pressure coefficients are obtained. The pressure-induced energy shift of the A and B transitions yields a linear pressure coefficient of αA = 88.2 ± 0.5 meV/GPa and αB = 89.3 ± 0.5 meV/GPa with a small sublinear term of βA = βB = -2.7 ± 0.2 meV/GPa(2). Effective hydrostatic deformation potentials of -6.12 ± 0.04 and -6.2 ± 0.04 eV are derived from the results for the A and B transitions, respectively. A decrease of the integrated intensity is observed above 0.5 GPa and is interpreted as a carrier transfer from the first to the second conduction band of the wurtzite InP.

Effects of nitrogen incorporation in HfO(2) grown on InP by atomic layer deposition: an evolution in structural, chemical, and electrical characteristics.

Science.gov (United States)

Kang, Yu-Seon; Kim, Dae-Kyoung; Kang, Hang-Kyu; Jeong, Kwang-Sik; Cho, Mann-Ho; Ko, Dae-Hong; Kim, Hyoungsub; Seo, Jung-Hye; Kim, Dong-Chan

2014-03-26

We investigated the effects of postnitridation on the structural characteristics and interfacial reactions of HfO2 thin films grown on InP by atomic layer deposition (ALD) as a function of film thickness. By postdeposition annealing under NH3 vapor (PDN) at 600 °C, an InN layer formed at the HfO2/InP interface, and ionized NHx was incorporated in the HfO2 film. We demonstrate that structural changes resulting from nitridation of HfO2/InP depend on the film thickness (i.e., a single-crystal interfacial layer of h-InN formed at thin (2 nm) HfO2/InP interfaces, whereas an amorphous InN layer formed at thick (>6 nm) HfO2/InP interfaces). Consequently, the tetragonal structure of HfO2 transformed into a mixture structure of tetragonal and monoclinic because the interfacial InN layer relieved interfacial strain between HfO2 and InP. During postdeposition annealing (PDA) in HfO2/InP at 600 °C, large numbers of oxidation states were generated as a result of interfacial reactions between interdiffused oxygen impurities and out-diffused InP substrate elements. However, in the case of the PDN of HfO2/InP structures at 600 °C, nitrogen incorporation in the HfO2 film effectively blocked the out-diffusion of atomic In and P, thus suppressing the formation of oxidation states. Accordingly, the number of interfacial defect states (Dit) within the band gap of InP was significantly reduced, which was also supported by DFT calculations. Interfacial InN in HfO2/InP increased the electron-barrier height to ∼0.6 eV, which led to low-leakage-current density in the gate voltage region over 2 V.

Radiation resistance and comparative performance of ITO/InP and n/p InP homojunction solar cells

International Nuclear Information System (INIS)

Weinberg, I.; Swartz, C.K.; Hart, R.E. Jr.; Coutts, T.J.

1988-09-01

The radiation resistance of ITO/InP cells processed by DC magnetron sputtering is compared to that of standard n/p InP and GaAs homojunction cells. After 20 MeV proton irradiations, it is found that the radiation resistance of the present ITO/InP cell is comparable to that of the n/p homojunction InP cell and that both InP cell types have radiation resistance significantly greater than GaAs. The relatively lower radiation resistance, observed at higher fluence, for the InP cell with the deepest junction depth, is attributed to losses in the cells emitter region. Diode parameters obtained from I sub sc - V sub oc plots, data from surface Raman spectroscopy, and determinations of surface conductivity types are used to investigate the configuration of the ITO/InP cells. It is concluded that thesee latter cells are n/p homojunctions, the n-region consisting of a disordered layer at the oxide semiconductor

Impacto da utilização de previsões "defasadas" no sistema de previsão de tempo por conjunto do CPTEC/INPE The impact of using lagged forecasts on the CPTEC/INPE ensemble prediction system

Directory of Open Access Journals (Sweden)

Lúcia Helena Ribas Machado

2010-03-01

Full Text Available Neste trabalho é descrita a aplicação da técnica de previsões defasadas no sistema de previsão de tempo por conjuntos do Centro de Previsão de Tempo e Estudos Climáticos (EPS-CPTEC/INPE. Os dados do CPTEC/INPE consistem em uma amostra de dois meses com previsões de 15 dias para as variáveis: altura geopotencial em 500 hPa, temperatura do ar no nível de 850 hPa, e pressão atmosférica ao nível médio do mar. O estudo consiste em investigar: 1 o desempenho do EPS-CPTEC/INPE utilizando a técnica de previsões defasadas comparado àquele do conjunto operacional; 2 a relação entre o espalhamento e o desempenho da previsão, a fim de avaliar o uso da dispersão como preditor do desempenho. Os resultados indicam que a utilização de previsões defasadas em 12h, melhora o desempenho do conjunto operacional, contribuindo para aumentar o espalhamento do conjunto e, conseqüentemente, reduzir a sub-dispersão do sistema. Também foi observado que o conjunto defasado tem desempenho comparável àquele do conjunto operacional e que há uma tendência de desempenho alto quando o espalhamento é baixo, para os prazos de 5 e 7 dias de previsão. Estes resultados servem como base para a implementação operacional desta técnica, que apresenta baixo custo computacional, e contribui para a utilização mais eficiente das previsões por conjunto do CPTEC/INPE.In this work we report the application of the lagged average forecasting technique to CPTEC/INPE ensemble forecast. The CPTEC/INPE data consist of two months samples of 15 days forecast for the variables: geopotential height at 500 hPa, air temperature at 850 hPa and mean sea level atmospheric pressure. We focus on the following: 1 Does the lagged averaged ensemble forecast improve forecast skill compared to the CPTEC/INPE operational ensemble? 2 Is the dispersion of the ensemble useful in predicting forecast skill? The results indicate that the utilization of 12h-lagged average forecasts

Controllable growth and optical properties of InP and InP/InAs nanostructures on the sidewalls of GaAs nanowires

International Nuclear Information System (INIS)

Yan, Xin; Zhang, Xia; Li, Junshuai; Cui, Jiangong; Ren, Xiaomin

2014-01-01

The growth and optical properties of InP and InP/InAs nanostructures on GaAs nanowires are investigated. InP quantum well and quantum dots (QDs) are formed on the sidewalls of GaAs nanowires successively with increasing the deposition time of InP. The GaAs/InP nanowire heterostructure exhibits a type-II band alignment. The wavelength of the InP quantum well is in the range of 857–892 nm at 77 K, which means that the quantum well is nearly fully strained. The InP quantum dot, which has a bow-shaped cross section, exhibits dislocation-free pure zinc blende structure. Stranski-Krastanow InAs quantum dots are subsequently formed on the GaAs/InP nanowire core-shell structure. The InAs quantum dots are distributed over the middle part of the nanowire, indicating that the In atoms contributing to the quantum dots mainly come from the vapor rather than the substrate. The longest emission wavelength obtained from the InAs QDs is 1039 nm at 77 K. The linewidth is as narrow as 46.3 meV, which is much narrower than those on planar InP substrates and wurtzite InP nanowires, suggesting high-crystal-quality, phase-purity, and size-uniformity of quantum dots

The electrochemistry of InP in Br2/HBr solutions and its relevance to etching behaviour

NARCIS (Netherlands)

Notten, P.H.L.; Damen, A.A.J.M.

1987-01-01

Etch rate-potential curves of p-InP in HBr and Br2/HBr solutions in the dark and under illumination were correlated with current-potential curves. It was found that InP is etched via a "chemical" mechanism both by HBr and Br2. In aqueous HBr solutions InP is only etched at a significant rate at

Semiclassical Monte Carlo simulation studies of spin dephasing in InP and InSb nanowires

Directory of Open Access Journals (Sweden)

Ashish Kumar

2012-03-01

Full Text Available We use semiclassical Monte Carlo approach to investigate spin polarized transport in InP and InSb nanowires. D’yakonov-Perel (DP relaxation and Elliott-Yafet (EY relaxation are the two main relaxation mechanisms for spin dephasing in III-V channels. The DP relaxation occurs because of bulk inversion asymmetry (Dresselhaus spin-orbit interaction and structural inversion asymmetry (Rashba spin-orbit interaction. The injection polarization direction studied is that along the length of the channel. The dephasing rate is found to be very strong for InSb as compared to InP which has larger spin dephasing lengths. The ensemble averaged spin components vary differently for both InP and InSb nanowires. The steady state spin distribution also shows a difference between the two III-V nanowires.

Particle detectors based on InP Schottky diodes

Czech Academy of Sciences Publication Activity Database

Yatskiv, Roman; Grym, Jan

2012-01-01

Roč. 10, č. 7 (2012), C100051-C100055 ISSN 1748-0221 R&D Projects: GA MŠk(CZ) OC10021; GA MŠk LD12014 Institutional support: RVO:67985882 Keywords : Particle detector * High purity InP layer * Schottky diode Subject RIV: JA - Electronics ; Optoelectronics, Electrical Engineering Impact factor: 1.869, year: 2011

Design of mm-wave InP DHBT power amplifiers

DEFF Research Database (Denmark)

Johansen, Tom Keinicke; Yan, Lei

2011-01-01

In this paper suitable topologies for mm-wave integrated power amplifiers using InP DHBT technology is investigated. Among the standard topologies for mm-wave power cells: common-emitter, common-base, and cascode configuration, the cascode configuration proves the most promising in terms of output...

Phosphorus-hydrogen complexes in LEC-grown InP

International Nuclear Information System (INIS)

Ulrici, W.; Kwasniewski, A.; Czupalla, M.; Neubert, M.

2005-01-01

In LEC-grown InP, about 30 sharp vibrational absorption lines are measured in the frequency region 2200 to 2350 cm -1 . All these lines are due to phosphorus-hydrogen stretching modes. Experiments on InP containing both hydrogen and deuterium finally proved that the line at 2202.4 cm -1 is due to a single hydrogen atom bonded to P in an indium vacancy (V In ) and that the line at 2315.6 cm -1 is due to the complex of four P-H bonds in an V In . In InP:H:D, this V In H 4 complex gives rise to six vibrational lines in the region of P-H modes and six lines in the region of P-D modes because of the five different types of V In H n D m complexes. The measured frequencies of these 12 lines are in excellent agreement with those obtained from ab initio calculations reported in the literature. Additional P-H complexes are discussed. (copyright 2005 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

Modeling of High-Speed InP DHBTs using Electromagnetic Simulation Based De-embedding

DEFF Research Database (Denmark)

Johansen, Tom Keinicke; Krozer, Viktor; Konczykowska, Agnieszka

2006-01-01

In this paper an approach for high-speed InP DHBT modeling valid to 110 GHz is reported. Electromagnetic (EM) simulation is applied to predict the embedded network model caused by pad parasitics. The form of the parasitic network calls for a 4-step de-embedding approach. Applying direct parameter...... extraction on the de-embedded device response leads to accurate small-signal model description of the InP DHBT. An parameter extraction approach is described for the Agilent HBT model, which assures consistency between large-signal and bias-dependent smallsignal modeling....

Treibhausgasemissionen unter Bewässerung und unterschiedlicher Stickstoffdüngungsintensität auf einem Sandboden in Nord-Ost-Deutschland

OpenAIRE

Trost, Benjamin

2015-01-01

Ziel der Arbeit ist die Gesamtbilanzierung der Treibhausgasemissionen eines Anbausystems unter Bewässerung auf einem Sandboden. Die dazu aufgestellte Treibhausgasbilanz basiert auf langjährigen Datenreihen zu Erträgen und Corg-Vorräten eines Dauerfeldversuchs sowie auf zweijährigen im Feldversuch durchgeführten N2O-Messungen. Die durchgeführten Untersuchungen zum Einfluss der Bewässerung auf die Corg-Vorräte zeigen, dass der Einsatz von mineralischem Stickstoffdünger und Bewässerung auf einem...

Terahertz-radiation generation in low-temperature InGaAs epitaxial films on (100) and (411) InP substrates

Energy Technology Data Exchange (ETDEWEB)

Galiev, G. B., E-mail: galiev-galib@mail.ru [Russian Academy of Sciences, Institute of Ultra-High Frequency Semiconductor Electronics (Russian Federation); Grekhov, M. M. [National Research Nuclear University “MEPhI” (Russian Federation); Kitaeva, G. Kh. [Moscow State University, Faculty of Physics (Russian Federation); Klimov, E. A.; Klochkov, A. N. [Russian Academy of Sciences, Institute of Ultra-High Frequency Semiconductor Electronics (Russian Federation); Kolentsova, O. S. [National Research Nuclear University “MEPhI” (Russian Federation); Kornienko, V. V.; Kuznetsov, K. A. [Moscow State University, Faculty of Physics (Russian Federation); Maltsev, P. P.; Pushkarev, S. S. [Russian Academy of Sciences, Institute of Ultra-High Frequency Semiconductor Electronics (Russian Federation)

2017-03-15

The spectrum and waveforms of broadband terahertz-radiation pulses generated by low-temperature In{sub 0.53}Ga{sub 0.47}As epitaxial films under femtosecond laser pumping are investigated by terahertz time-resolved spectroscopy. The In{sub 0.53}Ga{sub 0.47}As films are fabricated by molecular-beam epitaxy at a temperature of 200°C under different arsenic pressures on (100)-oriented InP substrates and, for the first time, on (411)A InP substrates. The surface morphology of the samples is studied by atomic-force microscopy and the structural quality is established by high-resolution X-ray diffraction analysis. It is found that the amplitude of terahertz radiation from the LT-InGaAs layers on the (411)A InP substrates exceeds that from similar layers formed on the (100) InP substrates by a factor of 3–5.

Reaktionen auf das Stigma psychischer Erkrankung : Sozialpsychologische Modelle und empirische Befunde

OpenAIRE

Rüsch, N

2010-01-01

Zusammenfassung. In der jüngeren Forschung zu Stigma und Diskriminierung gewinnt die Frage an Bedeutung, wie Angehörige einer stigmatisierten Minderheit ihre eigene Stigmatisierung wahrnehmen und auf sie reagieren. Aus der sozialpsychologischen Literatur zu anderen Gruppen, etwa ethnischen Minderheiten, liegen gut belegte Modelle zu diesem Thema vor, die bisher jedoch noch kaum auf Menschen mit psychischen Erkrankungen angewandt wurden. Dazu zählen (1) ein Stress-Coping-Modell von St...

Optical reflectance studies of highly specular anisotropic nanoporous (111) InP membrane

International Nuclear Information System (INIS)

Steele, J A; Lewis, R A; Sirbu, L; Enachi, M; Tiginyanu, I M; Skuratov, V A

2015-01-01

High-precision optical angular reflectance measurements are reported for a specular anisotropic nanoporous (111) InP membrane prepared by doping-assisted wet-electrochemical etching. The membrane surface morphology was investigated using scanning electron microscope imaging and revealed a quasi-uniform and self-organized nanoporous network consisting of semiconductor ‘islands’ in the sub-wavelength regime. The optical response of the nanoporous InP surface was studied at 405 nm (740 THz; UV), 633 nm (474 THz; VIS) and 1064 nm (282 THz; NIR), and exhibited a retention of basic macro-dielectric properties. Refractive index determinations demonstrate an optical anisotropy for the membrane which is strongly dependent on the wavelength of incident light, and exhibits an interesting inversion (positive anisotropy to negative) between 405 and 633 nm. The inversion of optical anisotropy is attributed to a strongly reduced ‘metallic’ behaviour in the membrane when subject to above-bandgap illumination. For the simplest case of sub-bandgap incident irradiation, the optical properties of the nanoporous InP sample are analysed in terms of an effective refractive index n eff and compared to effective media approximations. (invited article)

InP DHBT MMICs for millimeter-wave front-ends

DEFF Research Database (Denmark)

Johansen, Tom Keinicke; Hadziabdic, Dzenan; Krozer, Viktor

2009-01-01

In this paper, we show advanced MMIC's using InP DHBT technology. In particular, we demonstrate front-end circuits covering a broad frequency range from Q-band to E-band. Realizations of power amplifiers, quadrature VCOs, and sub-harmonic mixers, are presented and experimental results are discussed....

X-ray photoelectron spectroscopy/Ar+ ion profile study of thin oxide layers on InP

International Nuclear Information System (INIS)

Thurgate, S.M.; Erickson, N.E.

1990-01-01

The effect of incremental ion bombardment on the surface layers of an aqua regia etched InP sample was studied by monitoring the components of the In 3d 5/2 and O 1s x-ray photoelectron spectroscopy (XPS) lines as the sample was bombarded with low energy (1 keV) Ar + ions. The changes in the stoichiometry of the surface produced large shifts in the position of the In 3d and O 1s lines that were not paralleled by shifts in the P 2p line. Analysis of these shifts indicated that the surface was covered with a mixture of indium hydroxide and indium phosphate, with the phosphate closer to the InP substrate. It is proposed that this layer structure is due to differences in the dissolution rates of the oxidation products in the acid etch and the effect of the distilled water rinse. It may be possible to alter the composition of such oxides by carefully tailoring the etch conditions to optimize the kinetics for the particular oxide phase required. The analysis of the XPS lines also showed that the InP substrate was damaged at very low ion doses, and finally decomposed by the ion beam. When the ion ''cleaned'' sample was exposed to oxygen, a different oxide system was produced which consisted largely of In 2 O 3 and InPO 4 [or In(PO 3 ) x ]. This model of the oxidized surface of InP is consistent with other measurements and we conclude that ion milling together with XPS and careful curve fitting can be used to find the nature of the thin oxides on InP

Photoreflection investigations of the dopant activation in InP doped with beryllium ions

International Nuclear Information System (INIS)

Avakyants, L.P.; Bokov, P.Yu.; Chervyakov, A.V.

2005-01-01

The processes of the dopant activation in the InP crystals implanted with Be + ions (energy 100 keV, dose 10 13 cm -2 and subsequent thermal annealing during 10 s) have been studied by means of photoreflection spectroscopy. Spectral lines of the crystal InP were absent in the photoreflection spectra of the samples annealed at temperatures less then 400 Deg C. This fact is connected with the disordering of the crystal structure due to the ion implantation. In the temperature range 400-700 Deg C the lines from InP band gap (1.34 eV) and conductance band-spin-orbit splitting valence subband (1.44 eV) have been observed due to the recovery of the crystal structure. In the photoreflectance spectra of a 800 Deg C annealed sample the Franz-Keldysh oscillations have been observed, which can be an evidence in favour of the dopant activation. Carrier concentration calculated from the period of Franz-Keldysh oscillations was equal to 2.2 x 10 16 cm -3 [ru

Thermal conductivity of InAs quantum dot stacks using AlAs strain compensating layers on InP substrate

International Nuclear Information System (INIS)

Salman, S.; Folliot, H.; Le Pouliquen, J.; Chevalier, N.; Rohel, T.; Paranthoën, C.; Bertru, N.; Labbé, C.; Letoublon, A.; Le Corre, A.

2012-01-01

Highlights: ► The thermal conductivity of InAs on InP (1 1 3)B quantum dots stacks is measured. ► The growth of a close stack of 100 layers of InAs using AlAs strain compensating layers is presented. ► New data on the thermal conductivity of InP n-doped susbtrate are given. - Abstract: The growth and thermal conductivity of InAs quantum dot (QD) stacks embedded in GaInAs matrix with AlAs compensating layers deposited on (1 1 3)B InP substrate are presented. The effect of the strain compensating AlAs layer is demonstrated through Atomic Force Microscopy (AFM) and X-ray diffraction structural analysis. The thermal conductivity (2.7 W/m K at 300 K) measured by the 3ω method reveals to be clearly reduced in comparison with a bulk InGaAs layer (5 W/m K). In addition, the thermal conductivity measurements of S doped InP substrates and the SiN insulating layer used in the 3ω method in the 20–200 °C range are also presented. An empirical law is proposed for the S doped InP substrate, which slightly differs from previously presented results.

Effects of Be doping on InP nanowire growth mechanisms

Energy Technology Data Exchange (ETDEWEB)

Yee, R. J.; Gibson, S. J.; LaPierre, R. R. [Department of Engineering Physics, Centre for Emerging Device Technologies, McMaster University, Hamilton, Ontario L8S 4L7 (Canada); Dubrovskii, V. G. [St. Petersburg Academic University, Khlopina 8/3, 194021 St. Petersburg (Russian Federation); Ioffe Physical Technical Institute RAS, Politekhnicheskaya 26, 194021 St. Petersburg (Russian Federation)

2012-12-24

Be-doped InP nanowires were grown by the gold-assisted vapour-liquid-solid mechanism in a gas source molecular beam epitaxy system. The InP nanowire length versus diameter [L(D)] dependence revealed an unexpected transition with increasing Be dopant concentration. At Be dopant concentration below {approx}10{sup 18} cm{sup -3}, nanowires exhibited the usual inverse L(D) relationship, indicating a diffusion-limited growth regime. However, as dopant concentration increased, the nanowire growth rate was suppressed for small diameters, resulting in an unusual L(D) dependence that increased before saturating in height at about 400 nm. The cause of this may be a change in the droplet chemical potential, introducing a barrier to island nucleation. We propose a model accounting for the limitations of diffusion length and monolayer nucleation to explain this behaviour.

Ionospheric research at INPE

International Nuclear Information System (INIS)

Abdu, M.A.

1984-01-01

Ionosphere investigations at INPE are mainly concerned with the problems of equatorial and tropical ionospheres and their electrodynamic coupling with the high latitude ionosphere. Present research objectives include investigations in the following specific areas: equatorial ionospheric plasma dynamics; plasma irregularity generation and morphology, and effects on space borne radar operations; ionospheric response to disturbance dynamo and magnetospheric electric fields; aeronomic effcts of charged particle precipitation in the magnetic anomaly, etc. These problems are being investigated using experimental datacollected from ionospheric diagnostic instruments being operated at different locations in Brazil. These instruments are: ionosondes, VHF electronic polarimeters, L-band scintillation receivers, airglow photometers, riometers and VLF receivers. A brief summary of the research activities and some recnet results will be presented. (Author) [pt

Facile synthesis of uniform large-sized InP nanocrystal quantum dots using tris(tert-butyldimethylsilyl)phosphine

Science.gov (United States)

2012-01-01

Colloidal III-V semiconductor nanocrystal quantum dots [NQDs] have attracted interest because they have reduced toxicity compared with II-VI compounds. However, the study and application of III-V semiconductor nanocrystals are limited by difficulties in their synthesis. In particular, it is difficult to control nucleation because the molecular bonds in III-V semiconductors are highly covalent. A synthetic approach of InP NQDs was presented using newly synthesized organometallic phosphorus [P] precursors with different functional moieties while preserving the P-Si bond. Introducing bulky side chains in our study improved the stability while facilitating InP formation with strong confinement at a readily low temperature regime (210°C to 300°C). Further shell coating with ZnS resulted in highly luminescent core-shell materials. The design and synthesis of P precursors for high-quality InP NQDs were conducted for the first time, and we were able to control the nucleation by varying the reactivity of P precursors, therefore achieving uniform large-sized InP NQDs. This opens the way for the large-scale production of high-quality Cd-free nanocrystal quantum dots. PMID:22289352

Triple and Quadruple Junctions Thermophotovoltaic Devices Lattice Matched to InP

Science.gov (United States)

Bhusal, L.; Freundlich, A.

2007-01-01

Thermophotovoltaic (TPV) conversion of IR radiation emanating from a radioisotope heat source is under consideration for deep space exploration. Ideally, for radiator temperatures of interest, the TPV cell must convert efficiently photons in the 0.4-0.7 eV spectral range. Best experimental data for single junction cells are obtained for lattice-mismatched 0.55 eV InGaAs based devices. It was suggested, that a tandem InGaAs based TPV cell made by monolithically combining two or more lattice mismatched InGaAs subcells on InP would result in a sizeable efficiency improvement. However, from a practical standpoint the implementation of more than two subcells with lattice mismatch systems will require extremely thick graded layers (defect filtering systems) to accommodate the lattice mismatch between the sub-cells and could detrimentally affect the recycling of the unused IR energy to the emitter. A buffer structure, consisting of various InPAs layers, is incorporated to accommodate the lattice mismatch between the high and low bandgap subcells. There are evidences that the presence of the buffer structure may generate defects, which could extend down to the underlying InGaAs layer. The unusual large band gap lowering observed in GaAs(1-x)N(x) with low nitrogen fraction [1] has sparked a new interest in the development of dilute nitrogen containing III-V semiconductors for long-wavelength optoelectronic devices (e.g. IR lasers, detector, solar cells) [2-7]. Lattice matched Ga1-yInyNxAs1-x on InP has recently been investigated for the potential use in the mid-infrared device applications [8], and it could be a strong candidate for the applications in TPV devices. This novel quaternary alloy allows the tuning of the band gap from 1.42 eV to below 1 eV on GaAs and band gap as low as 0.6eV when strained to InP, but it has its own limitations. To achieve such a low band gap using the quaternary Ga1-yInyNxAs1-x, either it needs to be strained on InP, which creates further

Präbiotikasupplementation Schwangerer und ihre Wirkung auf die mütterliche und kindliche Darmflora sowie auf ausgewählte fetale Immunparameter - eine randomisierte, doppelblinde, placebo-kontrollierte Pilotstudie

OpenAIRE

Shadid, Rania

2007-01-01

Diese Studie ist die erste, randomisierte, doppel-blinde, placebo-kontrollierte Langzeitpilotstudie, welche die Wirkung der Präbiotika-Supplementation während der Schwangerschaft auf die Zusammensetzung der mütterlichen und kindlichen Darmmikroflora untersucht. Die Präbiotika-Supplementation im letzten Trimenon der Schwangerschaft zeigte eine gute Verträglichkeit und einen bifidogenen Effekt auf die Darmflora Schwangerer. Im Gegensatz dazu, hatte die Präbiotika-Supplementation keinen signifik...

Use of halide transport in epitaxial growth of InP and related compounds

Energy Technology Data Exchange (ETDEWEB)

Somogyi, K. [Hungarian Academy of Sciences, Budapest (Hungary). Research Inst. for Technical Physics

1996-12-31

In this paper methods and results in the InP (and related) growth practice are reviewed, classified and summarized on the basis of the recent literature. The aim is to show the present place and role of the halogen transport in the epitaxial growth. In the case of InP the importance of the classical hydride method is still high. Though MOVPE technique dominates in the case of growth of the compounds with In content, atomic layer epitaxy and selective area growth are successful with auxiliary application of the halogen transport. Chlorine assisted MOVPE has an increasing role.

Chemical etching and polishing of InP

International Nuclear Information System (INIS)

Kurth, E.; Reif, A.; Gottschalch, V.; Finster, J.; Butter, E.

1988-01-01

This paper describes possibilities of several chemical preparations for the selective cleaning of InP surfaces. The investigations of the surface states after the chemical treatment were carried out by means of XPS measurements. A pre-etching with (NH 4 ) 2 S 2 O 8 :H 2 SO 4 :H 2 O and a polishing with 1% bromine in methanol produce optically smooth (100)-and (111) P surfaces free of oxides. (author)

InP nanowire array solar cell with cleaned sidewalls

NARCIS (Netherlands)

Cui, Y.; Plissard, S.; Wang, J.; Vu, T.T.T.; Smalbrugge, E.; Geluk, E.J.; de Vries, T.; Bolk, J.; Trainor, M.J.; Verheijen, M.A.; Haverkort, J.E.M.; Bakkers, E.P.A.M.

2013-01-01

We have fabricated InP nanowire array solar cells with an axial p-n junction. Catalyst gold nanoparticles were first patterned into an array by nanoimprint lithography. The nanowire array was grown in 19 minutes by vapor-liquid-solid growth. The sidewalls were in-situ etched by HCl and ex-situ

Lattice defects in LPE InP-InGaAsP-InGaAs structure epitaxial layers on InP substrates

International Nuclear Information System (INIS)

Ishida, K.; Matsumoto, Y.; Taguchi, K.

1982-01-01

Lattice defects generated during LPE growth of InP-InGaAsP-InGaAs structure epitaxial layers on InP substrates are studied. Two different kinds of dislocations are observed at the two interfaces of the epitaxial layers; at the InP-InGaAsP interface, misfit dislocations are generated in the InP layer by carry over of InGaAsP melt into the InP one and at the InGaAs-InP interface, V-shaped dislocations are generated in the InGaAs layer. It is shown that the critical amount of lattice mismatch to suppress generation of misfit dislocations in InP is about two times smaller than that of other III-V compound semiconductors. Conditions to suppress the generation of these dislocations are clarified. (author)

Post deposition annealing effect on the properties of Al2O3/InP interface

Science.gov (United States)

Kim, Hogyoung; Kim, Dong Ha; Choi, Byung Joon

2018-02-01

Post deposition in-situ annealing effect on the interfacial and electrical properties of Au/Al2O3/n-InP junctions were investigated. With increasing the annealing time, both the barrier height and ideality factor changed slightly but the series resistance decreased significantly. Photoluminescence (PL) measurements showed that the intensities of both the near band edge (NBE) emission from InP and defect-related bands (DBs) from Al2O3 decreased with 30 min annealing. With increasing the annealing time, the diffusion of oxygen (indium) atoms into Al2O3/InP interface (into Al2O3 layer) occurred more significantly, giving rise to the increase of the interface state density. Therefore, the out-diffusion of oxygen atoms from Al2O3 during the annealing process should be controlled carefully to optimize the Al2O3/InP based devices.

Model of deep centers formation and reactions in electron irradiated InP

International Nuclear Information System (INIS)

Sibille, A.; Suski, J.; Gilleron, M.

1986-01-01

We present a model of the production of deep centers and their reactions following electron irradiations in InP. We propose that the dominant hole traps in p-InP and electron traps in p + n InP junctions are complexes between shallow acceptors and a common intrinsic entity, the phosphorus interstitial or vacancy. The reactions observed below and above room temperature are then due to a local mobility of this entity, which can be obtained as well by thermal as by electronic stimulation of the reactions. This model implies the long-range migration (at least down to 16 K) of this entity, and explains the strongly different behavior of n-InP compared to p-InP samples

Thermal crosstalk investigation in an integrated InP multiwavelength laser

NARCIS (Netherlands)

Gilardi, G.; Wale, M.J.; Smit, M.K.

2012-01-01

We numerically investigate the thermal crosstalk effects in an integrated InP multiwavelength laser. The multiwavelength laser under investigation consists of a number of Distributed Bragg Reflector lasers and an Arrayed Waveguide Grating. Each laser generates a fixed wavelength and the Arrayed

Low-frequency photocurrent oscillations in InP in magnetic field

International Nuclear Information System (INIS)

Slobodchikov, S.V.; Salikhov, Kh.M.; Kovalevskaya, G.G.

1994-01-01

Results of investigations of magnetic field effect on the oscillating photocurrent in InP crytals are presented. It is shown that the magnetic field plays the part of an additional source of photocarrier injection in the sample bulk. 3 refs., 2 figs

Lifetime measurements by open circuit voltage decay in GaAs and InP diodes

International Nuclear Information System (INIS)

Bhimnathwala, H.G.; Tyagi, S.D.; Bothra, S.; Ghandhi, S.K.; Borrego, J.M.

1990-01-01

Minority carrier lifetimes in the base of solar cells made in GaAs and InP are measured by open circuit voltage decay method. This paper describes the measurement technique and the conditions under which the minority carrier lifetimes can be measured. Minority carrier lifetimes ranging from 1.6 to 34 ns in InP of different doping concentrations are measured. A minority carrier lifetime of 6 ns was measured in n-type GaAs which agrees well with the lifetime of 5.7 ns measured by transient microwave reflection

Phosphorus-hydrogen complexes in LEC-grown InP

Energy Technology Data Exchange (ETDEWEB)

Ulrici, W. [Paul-Drude-Institut fuer Festkoerperelektronik, Hausvogteiplatz 5-7, 10117 Berlin (Germany); Kwasniewski, A.; Czupalla, M.; Neubert, M. [Institut fuer Kristallzuechtung, Max-Born-Str. 2, 12489 Berlin (Germany)

2005-03-01

In LEC-grown InP, about 30 sharp vibrational absorption lines are measured in the frequency region 2200 to 2350 cm{sup -1}. All these lines are due to phosphorus-hydrogen stretching modes. Experiments on InP containing both hydrogen and deuterium finally proved that the line at 2202.4 cm{sup -1} is due to a single hydrogen atom bonded to P in an indium vacancy (V{sub In}) and that the line at 2315.6 cm{sup -1} is due to the complex of four P-H bonds in an V{sub In}. In InP:H:D, this V{sub In}H{sub 4} complex gives rise to six vibrational lines in the region of P-H modes and six lines in the region of P-D modes because of the five different types of V{sub In}H{sub n}D{sub m} complexes. The measured frequencies of these 12 lines are in excellent agreement with those obtained from ab initio calculations reported in the literature. Additional P-H complexes are discussed. (copyright 2005 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

InP tunnel junction for InGaAs/InP tandem solar cells

Science.gov (United States)

Vilela, M. F.; Freundlich, A.; Bensaoula, A.; Medelci, N.; Renaud, P.

1995-01-01

Chemical beam epitaxy (CBE) has been shown to allow the growth of high quality materials with reproducible complex compositional and doping profiles. The main advantage of CBE compared to metalorganic chemical vapor deposition (MOCVD), the most popular technique for InP-based photovoltaic device fabrication, is the ability to grow high purity epilayers at much lower temperatures (450-530 C). We have previously shown that CBE is perfectly suited toward the fabrication of complex photovoltaic devices such as InP/InGaAs monolithically integrated tandem solar cells, because its low process temperature preserves the electrical characteristics of the InGaAs tunnel junction commonly used as an ohmic interconnect. In this work using CBE for the fabrication of optically transparent (with respect to the bottom cell) InP tunnel diodes is demonstrated. Epitaxial growth were performed in a Riber CBE 32 system using PH3 and TMIn as III and V precursors. Solid Be (p-type) and Si (n-type) have been used as doping sources, allowing doping levels up to 2 x 10(exp -19)/cu cm and 1 x 10(exp -19)/cu cm for n and p type respectively. The InP tunnel junction characteristics and the influence of the growth's conditions (temperature, growth rate) over its performance have been carefully investigated. InP p(++)/n(++) tunnel junction with peak current densities up to 1600 A/sq cm and maximum specific resistivities (V(sub p)/I(sub p) - peak voltage to peak current ratio) in the range of 10(exp -4) Omega-sq cm were obtained. The obtained peak current densities exceed the highest results previously reported for their lattice matched counterparts, In(0.53)Ga( 0.47)As and should allow the realization of improved minimal absorption losses in the interconnect InP/InGaAs tandem devices for Space applications. Owing to the low process temperature required for the top cell, these devices exhibit almost no degradation of its characteristics after the growth of subsequent thick InP layer suggesting

The influence of pressure on the birefringence in semiconductor compounds ZnS, CuGaS2, and InPS4

International Nuclear Information System (INIS)

Lavrentyev, A.A.; Gabrelian, B.V.; Kulagin, B.B.; Nikiforov, I.Ya.; Sobolev, V.V.

2007-01-01

Using the modified method of augmented plane waves and the code WIEN2k the calculations of the electron band structure, densities of electron states, and imaginary part of dielectric response function were carried out for different polarization of the vector of electrical field ε xx and ε zz for the semiconductor compounds ZnS, CuGaS 2 , and InPS 4 . The calculations were performed both for undisturbed crystals and for distorted crystals due to the applied pressure. The compounds studied have the similar crystallographic structures: ZnS - sphalerite, CuGaS 2 - chalcopyrite, and InPS 4 - twice defective chalcopyrite. It is known, that in cubic ZnS there is no birefringence, whereas in CuGaS 2 and InPS 4 there is one. But CuGaS 2 has so called isotropic point (where ε xx =ε zz ) in the visible optical range, and InPS 4 has no such point. Our calculations of ε xx and ε zz have shown that in ZnS under the pressure the isotropic points arise, but in InPS 4 they do not exist. (copyright 2007 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

Investigation of the open-circuit voltage in wide-bandgap InGaP-host InP quantum dot intermediate-band solar cells

Science.gov (United States)

Aihara, Taketo; Tayagaki, Takeshi; Nagato, Yuki; Okano, Yoshinobu; Sugaya, Takeyoshi

2018-04-01

To analyze the open-circuit voltage (V oc) in intermediate-band solar cells, we investigated the current-voltage characteristics in wide-bandgap InGaP-based InP quantum dot (QD) solar cells. From the temperature dependence of the current-voltage curves, we show that the V oc in InP QD solar cells increases with decreasing temperature. We use a simple diode model to extract V oc at the zero-temperature limit, V 0, and the temperature coefficient C of the solar cells. Our results show that, while the C of InP QD solar cells is slightly larger than that of the reference InGaP solar cells, V 0 significantly decreases and coincides with the bandgap energy of the InP QDs rather than that of the InGaP host. This V 0 indicates that the V oc reduction in the InP QD solar cells is primarily caused by the breaking of the Fermi energy separation between the QDs and the host semiconductor in intermediate-band solar cells, rather than by enhanced carrier recombination.

High uniformity of self-organized InAs quantum wires on InAlAs buffers grown on misoriented InP(001)

International Nuclear Information System (INIS)

Wang Yuanli; Jin, P.; Ye, X.L.; Zhang, C.L.; Shi, G.X.; Li, R.Y.; Chen, Y.H.; Wang, Z.G.

2006-01-01

Highly uniform InAs quantum wires (QWRs) have been obtained on the In 0.5 Al 0.5 As buffer layer grown on the InP substrate 8 (convolutionsign) off (001) towards (111) by molecular-beam epitaxy. The quasi-periodic composition modulation was spontaneously formed in the In 0.5 Al 0.5 As buffer layer on this misoriented InP (001). The width and period of the In-rich bands are about 10 and 40 nm, respectively. The periodic In-rich bands play a major role in the sequent InAs QWRs growth and the InAs QWRs are well positioned atop In-rich bands. The photoluminescence (PL) measurements showed a significant reduction in full width at half maximum and enhanced PL efficiency for InAs QWRs on misoriented InP(001) as compared to that on normal InP(001)

All-Optical 9.35 Gb/s Wavelength Conversion in an InP Photonic Crystal Nanocavity

DEFF Research Database (Denmark)

Vukovic, Dragana; Yu, Yi; Heuck, Mikkel

2013-01-01

Wavelength conversion of a 9.35 Gb/s RZ signal is demonstrated using an InP photonic crystal H0 nanocavity. A clear eye is observed for the converted signal showing a pre-FEC bit error ratio down to 10-3.......Wavelength conversion of a 9.35 Gb/s RZ signal is demonstrated using an InP photonic crystal H0 nanocavity. A clear eye is observed for the converted signal showing a pre-FEC bit error ratio down to 10-3....

Formation mechanisms for the dominant kinks with different angles in InP nanowires.

Science.gov (United States)

Zhang, Minghuan; Wang, Fengyun; Wang, Chao; Wang, Yiqian; Yip, SenPo; Ho, Johnny C

2014-01-01

The morphologies and microstructures of kinked InP nanowires (NWs) prepared by solid-source chemical vapor deposition method were examined using scanning electron microscopy (SEM) and high-resolution transmission electron microscopy (HRTEM). Statistical analysis and structural characterization reveal that four different kinds of kinks are dominant in the grown InP NWs with a bending angle of approximately 70°, 90°, 110°, and 170°, respectively. The formation mechanisms of these kinks are discussed. Specifically, the existence of kinks with bending angles of approximately 70° and 110° are mainly attributed to the occurrence of stacking faults and nanotwins in the NWs, which could easily form by the glide of {111} planes, while approximately 90° kinks result from the local amorphorization of InP NWs. Also, approximately 170° kinks are mainly caused by small-angle boundaries, where the insertion of extra atomic planes could make the NWs slightly bent. In addition, multiple kinks with various angles are also observed. Importantly, all these results are beneficial to understand the formation mechanisms of kinks in compound semiconductor NWs, which could guide the design of nanostructured materials, morphologies, microstructures, and/or enhanced mechanical properties.

Enhancement of radiation tolerance in GaAs/AlGaAs core–shell and InP nanowires

Science.gov (United States)

Li, Fajun; Xie, Xiaolong; Gao, Qian; Tan, Liying; Zhou, Yanping; Yang, Qingbo; Ma, Jing; Fu, Lan; Tan, Hark Hoe; Jagadish, Chennupati

2018-06-01

Radiation effects on semiconductor nanowires (NWs) have attracted the attention of the research community due to their potential applications in space and atomic fields. The effective implementation of NW devices in a radiation environment is a matter of concern. Here, the photoluminescence (PL) and time-resolved PL (TRPL) measurements were performed on both GaAs and InP NWs at room temperature before and after 1 MeV H+ irradiation with fluences ranging from 1 × 1011 to 5 × 1013 p cm‑2. It is found that the degradation of lifetime is size-dependent, and typically the minority carrier lifetime damage coefficient is closely correlated with the material and NW diameter. Compared to GaAs and InP bulk material counterparts, the lifetime damage coefficient of NWs decreases by a factor of about one order of magnitude. After irradiation, GaAs NWs with a smaller diameter show a much lower lifetime damage coefficient while InP NWs show an increase in carrier radiative lifetime. The increased size-dependent radiation hardness is mainly attributed to the defect sink effect and/or the improvement of a room temperature dynamic annealing mechanism of the NWs. The InP NWs also showed higher radiation tolerance than GaAs NWs.

Enhancement of radiation tolerance in GaAs/AlGaAs core-shell and InP nanowires.

Science.gov (United States)

Li, Fajun; Xie, Xiaolong; Gao, Qian; Tan, Liying; Zhou, Yanping; Yang, Qingbo; Ma, Jing; Fu, Lan; Tan, Hark Hoe; Jagadish, Chennupati

2018-06-01

Radiation effects on semiconductor nanowires (NWs) have attracted the attention of the research community due to their potential applications in space and atomic fields. The effective implementation of NW devices in a radiation environment is a matter of concern. Here, the photoluminescence (PL) and time-resolved PL (TRPL) measurements were performed on both GaAs and InP NWs at room temperature before and after 1 MeV H + irradiation with fluences ranging from 1 × 10 11 to 5 × 10 13 p cm -2 . It is found that the degradation of lifetime is size-dependent, and typically the minority carrier lifetime damage coefficient is closely correlated with the material and NW diameter. Compared to GaAs and InP bulk material counterparts, the lifetime damage coefficient of NWs decreases by a factor of about one order of magnitude. After irradiation, GaAs NWs with a smaller diameter show a much lower lifetime damage coefficient while InP NWs show an increase in carrier radiative lifetime. The increased size-dependent radiation hardness is mainly attributed to the defect sink effect and/or the improvement of a room temperature dynamic annealing mechanism of the NWs. The InP NWs also showed higher radiation tolerance than GaAs NWs.

Investigation of semi-insulating InP co-doped with Ti and various acceptors for use in X-ray detection

International Nuclear Information System (INIS)

Zdansky, K.; Gorodynskyy, V.; Kozak, H.; Pekarek, L.

2005-01-01

Semi-insulating InP single crystals co-doped with Zn and Ti and co-doped with Ti and Mn were grown by Czochralski technique. Wafers of these crystals were annealed for a long time at a high temperature and cooled slowly. The samples were characterized by temperature dependent resistivity and Hall coefficient measurements. The binding energies of Ti in semi-insulating InP co-doped with Ti and Zn and co-doped with Ti and Mn were found to differ which shows that Ti may occupy different sites in InP. The curves of Hall coefficient vs. reciprocal temperature deviate from straight lines at low temperatures due to electron and hole mixed conductance. The value of resistivity of the annealed semi-insulating InP co-doped with Ti and Mn reaches high resistivity at a reduced temperature easily achievable by thermo-electric devices which could make this material useable in X-ray detection. (copyright 2005 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

Highly doped InP as a low loss plasmonic material for mid-IR region.

Science.gov (United States)

Panah, M E Aryaee; Takayama, O; Morozov, S V; Kudryavtsev, K E; Semenova, E S; Lavrinenko, A V

2016-12-12

We study plasmonic properties of highly doped InP in the mid-infrared (IR) range. InP was grown by metal-organic vapor phase epitaxy (MOVPE) with the growth conditions optimized to achieve high free electron concentrations by doping with silicon. The permittivity of the grown material was found by fitting the calculated infrared reflectance spectra to the measured ones. The retrieved permittivity was then used to simulate surface plasmon polaritons (SPPs) propagation on flat and structured surfaces, and the simulation results were verified in direct experiments. SPPs at the top and bottom interfaces of the grown epilayer were excited by the prism coupling. A high-index Ge hemispherical prism provides efficient coupling conditions of SPPs on flat surfaces and facilitates acquiring their dispersion diagrams. We observed diffraction into symmetry-prohibited diffraction orders stimulated by the excitation of surface plasmon-polaritons in a periodically structured epilayer. Characterization shows good agreement between the theory and experimental results and confirms that highly doped InP is an effective plasmonic material aiming it for applications in the mid-IR wavelength range.

X-ray diffraction analysis of multilayer porous InP(001) structure

Czech Academy of Sciences Publication Activity Database

Lomov, A. A.; Punegov, V. I.; Vasil'ev, A. L.; Nohavica, Dušan; Gladkov, Petar; Kartsev, A. A.; Novikov, D. V.

2010-01-01

Roč. 55, č. 2 (2010), s. 182-190 ISSN 1063-7745 Institutional research plan: CEZ:AV0Z20670512 Keywords : silicon layers * INP Subject RIV: JA - Electronics ; Optoelectronics, Electrical Engineering Impact factor: 0.644, year: 2010

Roadmap for integration of InP based photonics and silicon electronics

NARCIS (Netherlands)

Williams, K.A.

2015-01-01

We identify the synergies and a roadmap for the intimate integration of InP photonic integrated circuits and Silicon electronic ICs using wafer-scale processes. Advantages are foreseen in terms of bandwidth, energy savings and package simplification.

Peculiarities of defect formation in InP single crystals doped with donor (S, Ge) and acceptor (Zn) impurities

International Nuclear Information System (INIS)

Morozov, A.N.; Mikryukova, E.V.; Bublik, V.T.; Berkova, A.V.; Nashel'skij, A.Ya.; Yakobson, S.V.

1988-01-01

Effect of alloying with donor (S,Ge) and acceptor (Zn) impurities on the concentration of proper point defects in monocrystals InP grown up from equiatomic (relative to In and P) melts by the Czochralski method under flux layer is investigated. Changes in boundary positions of the InP homogeneity region caused by alloying are analysed on the basis of experimental results according to the precision measurement of the lattice parameter and crystal density, as well as measurements of the Hall concentration of charge carriers and their mobility. The concentrations of Frenkel nonequilibrium (V in -In i ) defects formed in the initial stage of indium solid solution decomposition in InP are estimated

High brightness InP micropillars grown on silicon with Fermi level splitting larger than 1 eV.

Science.gov (United States)

Tran, Thai-Truong D; Sun, Hao; Ng, Kar Wei; Ren, Fan; Li, Kun; Lu, Fanglu; Yablonovitch, Eli; Chang-Hasnain, Constance J

2014-06-11

The growth of III-V nanowires on silicon is a promising approach for low-cost, large-scale III-V photovoltaics. However, performances of III-V nanowire solar cells have not yet been as good as their bulk counterparts, as nanostructured light absorbers are fundamentally challenged by enhanced minority carriers surface recombination rates. The resulting nonradiative losses lead to significant reductions in the external spontaneous emission quantum yield, which, in turn, manifest as penalties in the open-circuit voltage. In this work, calibrated photoluminescence measurements are utilized to construct equivalent voltage-current characteristics relating illumination intensities to Fermi level splitting ΔF inside InP microillars. Under 1 sun, we show that splitting can exceed ΔF ∼ 0.90 eV in undoped pillars. This value can be increased to values of ΔF ∼ 0.95 eV by cleaning pillar surfaces in acidic etchants. Pillars with nanotextured surfaces can yield splitting of ΔF ∼ 0.90 eV, even though they exhibit high densities of stacking faults. Finally, by introducing n-dopants, ΔF of 1.07 eV can be achieved due to a wider bandgap energy in n-doped wurzite InP, the higher brightness of doped materials, and the extraordinarily low surface recombination velocity of InP. This is the highest reported value for InP materials grown on a silicon substrate. These results provide further evidence that InP micropillars on silicon could be a promising material for low-cost, large-scale solar cells with high efficiency.

Mid-IR optical properties of silicon doped InP

DEFF Research Database (Denmark)

Panah, Mohammad Esmail Aryaee; Han, Li; Norrman, Kion

2017-01-01

of growth conditions on the optical and electrical properties of silicon doped InP (InP:Si) in the wavelength range from 3 to 40 μm was studied. The carrier concentration of up to 3.9 × 1019 cm-3 is achieved by optimizing the growth conditions. The dielectric function, effective mass of electrons and plasma...

Effect of Fe inter-diffusion on properties of InP layers grown with addition of RE elements

International Nuclear Information System (INIS)

Prochazkova, O.; Zavadil, J.; Zdansky, K.

2005-01-01

This contribution reports the redistribution behaviour of Fe during the growth of InP layers from liquid phase with addition of some rare earth elements on semi-insulating InP:Fe substrates. We have studied the influence of different rare earths on the Fe diffusion into InP layer and compared it with the phenomenon of an extraction of iron from Fe doped materials into adjacent layers doped by Zn, Cd and Be, reported recently. In the case of Tm addition a conversion of electrical conductivity of InP layer to semi-insulating as a consequence of Fe diffusion has been observed while no significant Fe inter-diffusion has been confirmed in the presence of other investigated rare earth additions. (copyright 2005 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

Electronic properties of wurtzite-phase InP nanowires determined by optical and magneto-optical spectroscopy

Science.gov (United States)

De Luca, Marta; Polimeni, Antonio

2017-12-01

Thanks to their peculiar shape and dimensions, semiconductor nanowires (NWs) are emerging as building components of novel devices. The presence of wurtzite (WZ) phase in the lattice structure of non-nitride III-V NWs is one of the most surprising findings in these nanostructures: this phase, indeed, cannot be found in the same materials in the bulk form, where the zincblende (ZB) structure is ubiquitous, and therefore the WZ properties are poorly known. This review focuses on WZ InP NWs, because growth techniques have reached a high degree of control on the structural properties of this material, and optical studies performed on high-quality samples have allowed determining the most useful electronic properties, which are reviewed here. After an introduction summarizing the reasons for the interest in WZ InP nanowires (Sec. I), we give an overview on growth process and structural and optical properties of WZ InP NWs (Sec. II). In Sec. III, a complete picture of the energy and symmetry of the lowest-energy conduction and valence bands, as assessed by polarization-resolved photoluminescence (PL) and photoluminescence-excitation (PLE) studies is drawn and compared to all the available theoretical information. The elastic properties of WZ InP (determined by PL under hydrostatic pressure) and the radiative recombination dynamics of spatially direct and indirect (namely, occurring across the WZ/ZB interfaces) transitions are also discussed. Section IV, focuses on the magneto-optical studies of WZ InP NWs. The diagram of the energy levels of excitons in WZ materials—with and without magnetic field—is first provided. Then, all theoretical and experimental information available about the changes in the transport properties (i.e., carrier effective mass) caused by the ZB→WZ phase variation are reviewed. Different NW/magnetic field geometrical configurations, sensitive to polarization selection rules, highlight anisotropies in the diamagnetic shifts, Zeeman splitting

Design procedure for millimeter-wave InP DHBT stacked power amplifiers

DEFF Research Database (Denmark)

Squartecchia, Michele; Johansen, Tom Keinicke; Midili, Virginio

2015-01-01

The stacked-transistor concept for power amplifiers (PA) has been investigated in this work. Specifically, this architecture has been applied in the design of millimeter-wave monolithic microwave integrated circuits (MMICs) using indium phosphide (InP) double heterojunction bipolar transistors...

InP integrated photonics : state of the art and future directions

NARCIS (Netherlands)

Williams, Kevin

2017-01-01

InP integrated circuits enable transceiver technologies with more than 200Gb/s per wavelength and 2Tb/s per fiber. Advances in monolithic integration are poised to reduce energy. remove assembly complexity, and sustain future year-on-year performance increases.

Label swapper device for spectral amplitude coded optical packet networks monolithically integrated on InP.

Science.gov (United States)

Muñoz, P; García-Olcina, R; Habib, C; Chen, L R; Leijtens, X J M; de Vries, T; Robbins, D; Capmany, J

2011-07-04

In this paper the design, fabrication and experimental characterization of an spectral amplitude coded (SAC) optical label swapper monolithically integrated on Indium Phosphide (InP) is presented. The device has a footprint of 4.8x1.5 mm2 and is able to perform label swapping operations required in SAC at a speed of 155 Mbps. The device was manufactured in InP using a multiple purpose generic integration scheme. Compared to previous SAC label swapper demonstrations, using discrete component assembly, this label swapper chip operates two order of magnitudes faster.

InP Devices For Millimeter-Wave Monolithic Circuits

Science.gov (United States)

Binari, S. C.; Neidert, R. E.; Dietrich, H. B.

1989-11-01

High efficiency, mm-wave operation has been obtained from lateral transferred-electron devices (TEDs) designed with a high resistivity region located near the cathode contact. At 29.9 GHz, a CW power output of 29.1 mW with a conversion efficiency of 6.7% has been achieved with cavity-tuned discrete devices. This result represents the highest power output and efficiency of a lateral TED in this frequency range. The lateral devices also had a CW power output of 0.4 mW at 98.5 GHz and 0.9 mW at 75.2 GHz. In addition, a monolithic oscillator incorporating the lateral TED has been demonstrated at 79.9 GHz. InP Schottky-barrier diodes have been fabricated using selective MeV ion implantation into semi-insulating InP substrates. Using Si implantation with energies of up to 6.0 MeV, n+ layers as deep as 3 μm with peak carrier concentrations of 2 x 1018 cm-3 have been obtained. These devices have been evaluated as mixers and detectors at 94 GHz and have demonstrated a conversion loss of 7.6 dB and a zero-bias detector sensitivity as high as 400 mV/mW.

Solvothermal synthesis of InP quantum dots and their enhanced luminescent efficiency by post-synthetic treatments.

Science.gov (United States)

Byun, Ho-June; Lee, Ju Chul; Yang, Heesun

2011-03-01

InP quantum dots (QDs) were solvothermally synthesized by using a greener phosphorus source of P(N(CH(3))(2))(3) instead of highly toxic P(TMS)(3) widely used, and subsequently subjected to a size-sorting processing. While as-grown QDs showed an undetectably low emission intensity, post-synthetic treatments such as photo-etching, photo-radiation, and photo-assisted ZnS shell coating gave rise to a substantial increase in emission efficiency due to the effective removal and passivation of surface states. The emission efficiency of the photo-etched QDs was further enhanced by a consecutive UV photo-radiation, attributable to the photo-oxidation at QD surface. Furthermore, a relatively thick ZnS shell on the surface of InP QDs that were surface-modified with hydrophilic ligands beforehand was photochemically generated in an aqueous solution at room temperature. The resulting InP/ZnS core/shell QDs, emitting from blue to red wavelengths, were more efficient than the above photo-treated InP QDs, and their luminescent properties (emission bandwidth and quantum yield) were comparable to those of InP QDs synthesized with P(TMS)(3). Structural, size, and compositional analyses on InP/ZnS QDs were also conducted to elucidate their core/shell structure. Copyright © 2010 Elsevier Inc. All rights reserved.

Electronic properties of pure and p-type doped hexagonal sheets and zigzag nanoribbons of InP

International Nuclear Information System (INIS)

Longo, R C; Carrete, J; Alemany, M M G; Gallego, L J

2013-01-01

Unlike graphene, a hexagonal InP sheet (HInPS) cannot be obtained by mechanical exfoliation from the native bulk InP, which crystallizes in the zinc blende structure under ambient conditions. However, by ab initio density functional theory calculations we found that a slightly buckled HInPS is stable both in pristine form and when doped with Zn atoms; the same occurred for hydrogen-passivated zigzag InP nanoribbons (ZInPNRs), quasi-one-dimensional versions of the quasi-two-dimensional material. We investigated the electronic properties of both nanostructures, in the latter case also in the presence of an external transverse electric field, and the results are compared with those of hypothetical planar HInPS and ZInPNRs. The band gaps of planar ZInPNRs were found to be tunable by the choice of strength of this field, and to show an asymmetric behavior under weak electric fields, by which the gap can either be increased or decreased depending on their direction; however, this effect is absent from slightly buckled ZInPNRs. The binding energies of the acceptor impurity states of Zn-doped HInPS and ZInPNRs were found to be similar and much larger than that of Zn-doped bulk InP. These latter findings show that the reduction of the dimensionality of these materials limits the presence of free carriers. (paper)

Surface passivation of InP solar cells with InAlAs layers

Science.gov (United States)

Jain, Raj K.; Flood, Dennis J.; Landis, Geoffrey A.

1993-01-01

The efficiency of indium phosphide solar cells is limited by high values of surface recombination. The effect of a lattice-matched In(0.52)Al(0.48)As window layer material for InP solar cells, using the numerical code PC-1D is investigated. It was found that the use of InAlAs layer significantly enhances the p(+)n cell efficiency, while no appreciable improvement is seen for n(+)p cells. The conduction band energy discontinuity at the heterojunction helps in improving the surface recombination. An optimally designed InP cell efficiency improves from 15.4 percent to 23 percent AMO for a 10 nm thick InAlAs layer. The efficiency improvement reduces with increase in InAlAs layer thickness, due to light absorption in the window layer.

Transient behavior of interface state continuum at InP insulator-semiconductor interface

International Nuclear Information System (INIS)

Hasegawa, H.; Masuda, H.; He, L.; Luo, J.K.; Sawada, T.; Ohno, H.

1987-01-01

To clarify the drain current drift mechanism in InP MISFETs, an isothermal capacitance transient spectroscopy (ICTS) study of the interface state continuum is made on the anodic Al 2 O 3 /native oxide/ InP MIS system. Capture behavior is temperature-independent, non-exponential and extremely slow, whereas emission behavior is temperature- and bias- dependent, and is much faster. The observed behavior is explained quantitatively by the disorder induced gap state (DIGS) model, where states are distributed both in energy and in space. By comparing the transient behavior of interface states with the observed drift behavior of MISFETs, it is concluded that the electron capture by the DIGS continuum is responsible for the drain current drift of MISFETs. This led to a complete computer simulation of the observed current drift behavior

Astragal und eiförmige motive auf Stuckdekor der Wandmalerei Sirmiums

Directory of Open Access Journals (Sweden)

Rogić Dragana

2011-01-01

Full Text Available Im Laufe archäologischer Ausgrabungen 1977 kamen in Sremska Mitrovica, auf der Fundstelle Nr. 56, in einem Gebäude, dessen Grundriss und Typ nicht festgestellt werden konnten, neben anderen Funden auch mehrere Fragmente an Stuckdekoration zutage. In dieser Studie werden ihre Elemente parallel zu ähnlichen Motiven, die auf anderen in Sirmium gefundenen Wandmalereien auftreten, betrachtet. [Projekat Ministarstva nauke Republike Srbije, br. 47018: Viminacium, die römische Stadt und Militärlager - Forschung der materialen und geistigen Hinterlassenschaft mit der Verwendung moderner Technologien: Ferndetektion, Geophysik, GIS Digitalisation und 3D Visualisation

Peculiarities of defect formation in InP single crystals doped with donor (S, Ge) and acceptor (Zn) impurities

International Nuclear Information System (INIS)

Mikryukova, E.V.; Morozov, A.N.; Berkova, A.V.; Nashel'skij, A.Ya.; Yakobson, S.V.

1988-01-01

Peculiarities of dislocation and microdefect formation in InP monocrystals doped with donor (S,Ge) and acceptor (Zn) impurities are investigated by the metallography. Dependence of dislocation density on the concentration of alloying impurity is established. Microdefects leading to the appearance of 5 different types of etch figures are shown to be observed in doped InP monocrystals. The mechanism of microdefect formation is suggested

Growth of semiconductor alloy InGaPBi on InP by molecular beam epitaxy

International Nuclear Information System (INIS)

Wang, K; Wang, P; Pan, W W; Wu, X Y; Yue, L; Gong, Q; Wang, S M

2015-01-01

We report the first successful growth of InGaPBi single crystals on InP substrate with Bi concentration far beyond the doping level by gas source molecular beam epitaxy. The InGaPBi thin films reveal excellent surface and structural qualities, making it a promising new III–V compound family member for heterostructures. The strain can be tuned between tensile and compressive by adjusting Ga and Bi compositions. The maximum achieved Bi concentration is 2.2 ± 0.4% confirmed by Rutherford backscattering spectroscopy. Room temperature photoluminescence shows strong and broad light emission at energy levels much smaller than the InP bandgap. (paper)

Effective Surface Passivation of InP Nanowires by Atomic-Layer-Deposited Al2O3 with POx Interlayer.

Science.gov (United States)

Black, L E; Cavalli, A; Verheijen, M A; Haverkort, J E M; Bakkers, E P A M; Kessels, W M M

2017-10-11

III/V semiconductor nanostructures have significant potential in device applications, but effective surface passivation is critical due to their large surface-to-volume ratio. For InP such passivation has proven particularly difficult, with substantial depassivation generally observed following dielectric deposition on InP surfaces. We present a novel approach based on passivation with a phosphorus-rich interfacial oxide deposited using a low-temperature process, which is critical to avoid P-desorption. For this purpose we have chosen a PO x layer deposited in a plasma-assisted atomic layer deposition (ALD) system at room temperature. Since PO x is known to be hygroscopic and therefore unstable in atmosphere, we encapsulate this layer with a thin ALD Al 2 O 3 capping layer to form a PO x /Al 2 O 3 stack. This passivation scheme is capable of improving the photoluminescence (PL) efficiency of our state-of-the-art wurtzite (WZ) InP nanowires by a factor of ∼20 at low excitation. If we apply the rate equation analysis advocated by some authors, we derive a PL internal quantum efficiency (IQE) of 75% for our passivated wires at high excitation. Our results indicate that it is more reliable to calculate the IQE as the ratio of the integrated PL intensity at room temperature to that at 10 K. By this means we derive an IQE of 27% for the passivated wires at high excitation (>10 kW cm -2 ), which constitutes an unprecedented level of performance for undoped InP nanowires. This conclusion is supported by time-resolved PL decay lifetimes, which are also shown to be significantly higher than previously reported for similar wires. The passivation scheme displays excellent long-term stability (>7 months) and is additionally shown to substantially improve the thermal stability of InP surfaces (>300 °C), significantly expanding the temperature window for device processing. Such effective surface passivation is a key enabling technology for InP nanowire devices such as

Antireflection coating on InP for semiconductor detectors

International Nuclear Information System (INIS)

Hantehzadeh, M.R.; Ghoranneviss, M.; Sari, A.H.; Sahlani, F.; Shokuhi, A.; Shariati, M.

2006-01-01

Aluminum nitride thin film by RF magnetron sputtering is used to produce antireflection coating on InP. The index of refection variation of aluminum nitride for different thickness at different wavelength in the range of 400 to 1500 nm is investigated using reflection spectroscopy. Subsequent Ar+ ion implantation at 30 keV with different doses on these coated layers has been performed. The morphology of aluminum nitride after ion implantation is characterized using atomic force microscopy AFM

Antireflection coating on InP for semiconductor detectors

Energy Technology Data Exchange (ETDEWEB)

Hantehzadeh, M.R. [Plasma Physics Research Center, Science and Research Campus of Islamic Azad University, Tehran (Iran, Islamic Republic of)]. E-mail: hanteh@sr.iau.ac.ir; Ghoranneviss, M. [Plasma Physics Research Center, Science and Research Campus of Islamic Azad University, Tehran (Iran, Islamic Republic of); Sari, A.H. [Plasma Physics Research Center, Science and Research Campus of Islamic Azad University, Tehran (Iran, Islamic Republic of); Sahlani, F. [Plasma Physics Research Center, Science and Research Campus of Islamic Azad University, Tehran (Iran, Islamic Republic of); Shokuhi, A. [Plasma Physics Research Center, Science and Research Campus of Islamic Azad University, Tehran (Iran, Islamic Republic of); Shariati, M. [Plasma Physics Research Center, Science and Research Campus of Islamic Azad University, Tehran (Iran, Islamic Republic of)

2006-10-25

Aluminum nitride thin film by RF magnetron sputtering is used to produce antireflection coating on InP. The index of refection variation of aluminum nitride for different thickness at different wavelength in the range of 400 to 1500 nm is investigated using reflection spectroscopy. Subsequent Ar+ ion implantation at 30 keV with different doses on these coated layers has been performed. The morphology of aluminum nitride after ion implantation is characterized using atomic force microscopy AFM.

Fabrication of InP-pentacene inorganic-organic hybrid heterojunction using MOCVD grown InP for photodetector application

Science.gov (United States)

Sarkar, Kalyan Jyoti; Pal, B.; Banerji, P.

2018-04-01

We fabricated inorganic-organic hybrid heterojunction between indium phosphide (InP) and pentacene for photodetector application. InP layer was grown on n-Si substrate by atmospheric pressure metal organic chemical vapour deposition (MOCVD) technique. Morphological properties of InP and pentacene thin film were characterized by atomic force microscopy (AFM). Current-voltage characteristics were investigated in dark and under illumination condition at room temperature. During illumination, different wavelengths of visible and infrared light source were employed to perform the electrical measurement. Enhancement of photocurrent was observed with decreasing in wavelength of incident photo radiation. Ideality factor was found to be 1.92. High rectification ratio of 225 was found at ± 3 V in presence of infrared light source. This study provides new insights of inorganic-organic hybrid heterojunction for broadband photoresponse in visible to near infrared (IR) region under low reverse bias condition.

Unique Three-Dimensional InP Nanopore Arrays for Improved Photoelectrochemical Hydrogen Production.

Science.gov (United States)

Li, Qiang; Zheng, Maojun; Ma, Liguo; Zhong, Miao; Zhu, Changqing; Zhang, Bin; Wang, Faze; Song, Jingnan; Ma, Li; Shen, Wenzhong

2016-08-31

Ordered three-dimensional (3D) nanostructure arrays hold promise for high-performance energy harvesting and storage devices. Here, we report the fabrication of InP nanopore arrays (NPs) in unique 3D architectures with excellent light trapping characteristic and large surface areas for use as highly active photoelectrodes in photoelectrochemical (PEC) hydrogen evolution devices. The ordered 3D NPs were scalably synthesized by a facile two-step etching process of (1) anodic etching of InP in neutral 3 M NaCl electrolytes to realize nanoporous structures and (2) wet chemical etching in HCl/H3PO4 (volume ratio of 1:3) solutions for removing the remaining top irregular layer. Importantly, we demonstrated that the use of neutral electrolyte of NaCl instead of other solutions, such as HCl, in anodic etching of InP can significantly passivate the surface states of 3D NPs. As a result, the maximum photoconversion efficiency obtained with ∼15.7 μm thick 3D NPs was 0.95%, which was 7.3 and 1.4 times higher than that of planar and 2D NPs. Electrochemical impedance spectroscopy and photoluminescence analyses further clarified that the improved PEC performance was attributed to the enhanced charge transfer across 3D NPs/electrolyte interfaces, the improved charge separation at 3D NPs/electrolyte junction, and the increased PEC active surface areas with our unique 3D NP arrays.

Gasgenerator-Treibstoff auf der Basis von Ammoniumdinitramid (ADN) und Verfahren zu seiner Herstellung

OpenAIRE

Krause, Horst; Schlechtriem, Stefan; Weiser, Volker; Schaller, Uwe; Hürttlen, Jürgen

2016-01-01

Es wird ein Gasgenerator-Treibstoff vorgeschlagen, welcher einen monergolen Treibstoff auf der Basis von Ammoniumdinitramid (ADN) und wenigstens ein Lösungsmittel enthält, wobei der Gasgenerator-Treibstoff wenigstens 65 Mass.-% ADN und höchstens 5 Mass.-% Wasser, jeweils bezogen auf die Mischung aus ADN und Lösungsmittel, enthält, und wobei wenigstens ein Lösungsmittel von Ammoniak (NH3) gebildet ist. Der Gasgenerator-Treibstoff ist vorzugsweise im Wesentlichen wasserfrei und enthält keine we...

Minority-carrier lifetime in InP as a function of light bias

Science.gov (United States)

Yater, Jane A.; Weinberg, I.; Jenkins, Phillip P.; Landis, Geoffrey A.

1995-01-01

Minority-carrier lifetime in InP is studied as a function of doping level and laser intensity using time-resolved photoluminescence. A continuous wave diode laser illuminates bulk InP and acts as a light bias, injecting a steady-state concentration of carriers. A 200 ps laser pulse produces a small transient signal on top of the steady-state luminescence, allowing lifetime to be measured directly as a function of incident intensity. For p-InP, lifetime increases with light bias up to a maximum value. Bulk recombination centers are presumably filled to saturation, allowing minority carriers to live longer. The saturation bias scales with dopant concentration for a particular dopant species. As light bias is increased for n-InP, minority-carrier lifetime increases slightly but then decreases, suggesting radiative recombination as a dominant decay mechanism.

Exploring the effective photon management by InP nanoparticles: Broadband light absorption enhancement of InP/In0.53Ga0.47As/InP thin-film photodetectors

International Nuclear Information System (INIS)

Fu, Dong; Zhu, Xi; Li, Jian; Xu, Yun; Song, Guofeng; Wei, Xin; Liu, Jietao

2015-01-01

High-index dielectric and semiconductor nanoparticles with the characteristics of low absorption loss and strong scattering have attracted more and more attention for improving performance of thin-film photovoltaic devices. In this paper, we focus our attention on InP nanoparticles and study the influence of the substrate and the geometrical configurations on their scattering properties. We demonstrate that, compared with the InP sphere, the InP cylinder has higher coupling efficiency due to the stronger interactions between the optical mode in the nanoparticle and its induced mirror image in the substrate. Moreover, we propose novel thin-film InGaAs photodetectors integrated with the periodically arranged InP nanoparticles on the substrate. Broadband light absorption enhancement is achieved over the wavelength range between 1.0 μm and 1.7 μm. The highest average absorption enhancement of 59.7% is realized for the photodetector with the optimized cylinder InP nanoparticles. These outstanding characteristics attribute to the preferentially forward scattering of single InP nanoparticle along with the effective coupling of incident light into the guided modes through the collective diffraction effect of InP nanoparticles array

Crystallinity, Surface Morphology, and Photoelectrochemical Effects in Conical InP and InN Nanowires Grown on Silicon.

Science.gov (United States)

Parameshwaran, Vijay; Xu, Xiaoqing; Clemens, Bruce

2016-08-24

The growth conditions of two types of indium-based III-V nanowires, InP and InN, are tailored such that instead of yielding conventional wire-type morphologies, single-crystal conical structures are formed with an enlarged diameter either near the base or near the tip. By using indium droplets as a growth catalyst, combined with an excess indium supply during growth, "ice cream cone" type structures are formed with a nanowire "cone" and an indium-based "ice cream" droplet on top for both InP and InN. Surface polycrystallinity and annihilation of the catalyst tip of the conical InP nanowires are observed when the indium supply is turned off during the growth process. This growth design technique is extended to create single-crystal InN nanowires with the same morphology. Conical InN nanowires with an enlarged base are obtained through the use of an excess combined Au-In growth catalyst. Electrochemical studies of the InP nanowires on silicon demonstrate a reduction photocurrent as a proof of photovolatic behavior and provide insight as to how the observed surface polycrystallinity and the resulting interface affect these device-level properties. Additionally, a photovoltage is induced in both types of conical InN nanowires on silicon, which is not replicated in epitaxial InN thin films.

X-ray structure amplitudes for GaAs and InP

International Nuclear Information System (INIS)

Pietsch, U.

1985-01-01

The structure amplitudes of GaAs and InP are calculated taking into account the nonspherical parts of the valence electron density by means of a static bond charge model. The best known temperature factors and dispersion coefficients are employed. The calculated structure amplitudes should help determining exactly the shape of X-ray diffraction patterns. (author)

Auf dem Weg zur Digitalen Bibliothek

OpenAIRE

Degkwitz, Andreas; Frank, Nina; Hendrix, Imma; Pfeifenberger, Regina; Tollkühn, Katharina

2013-01-01

Nichts hat den Lebensalltag in den vergangenen zwanzig Jahren mehr verändert als das Internet, das uns mit Handys, Laptops, Net- und Notebooks, Smartphones und Tablet-PCs allgegenwärtig begleitet. Das iPhone bietet den permanenten Zugang zu weltweit verfügbarer Information in der Westentasche und hat damit einen völlig neuen Umgang mit Interaktion und Informationsrecherche herbeigeführt. Der tief greifende Wandel hat sich massiv auf die Weiterentwicklung der Serviceprofile wissenschaftl...

Switching characteristics of an InP photonic crystal nanocavity: Experiment and theory

DEFF Research Database (Denmark)

Yu, Yi; Palushani, Evarist; Heuck, Mikkel

2013-01-01

The dynamical properties of an InP photonic crystal nanocavity are experimentally investigated using pump-probe techniques and compared to simulations based on coupled-mode theory. Excellent agreement between experimental results and simulations is obtained when employing a rate equation model...

The effect of phosphorus and sulfur treatment on the surface properties of InP

Science.gov (United States)

Iyer, R.; Chang, R. R.; Dubey, A.; Lile, D. L.

1988-01-01

Experimental results are presented for InP surfaces treated by using red phosphorus as a source to create an excess overpressure of phosphorus during annealing and prior to silicon dioxide deposition. The surface has been probed by in situ photoluminescence, noncontacting remote gate C-V, and conventional high-frequency and quasi-static C-V methods. A study has also been made of the surface of sulfurized InP following heating in aqueous (NH4)2S(x). MISFETs fabricated using the benefits of these surface treatments show high transconductances and stabilities approaching those of thermal SiO2/Si with less than 5-percent variation in drain current over a 12-hr period.

Formation and characterization of Ni nanostructures in porous InP - from crystallites to wires

International Nuclear Information System (INIS)

Gerngross, M.-D.; Hrkac, V.; Kienle, L.; Carstensen, J.; Foell, H.

2013-01-01

In this work the galvanic formation of Ni crystallites and Ni nanowires with very high aspect ratios (>1000:1) in porous InP is presented. By depositing a dielectric interlayer on the InP pore walls it is possible to produce very high aspect ratio Ni nanowires. The coercivity of these nanowires is about 100 Oe (in-plane) and 240 Oe (out-of-plane), while the coercivity of the crystallites lies in between these values. The in-plane remanence squareness of the Ni nanowires is very low (S ∼ 0.08), out-of-plane it is 0.36. For the Ni crystallites the remanence squareness lies in between the range given for the Ni nanowires. (author)

Synthesis and properties of ultra-long InP nanowires on glass.

Science.gov (United States)

Dhaka, Veer; Pale, Ville; Khayrudinov, Vladislav; Kakko, Joona-Pekko; Haggren, Tuomas; Jiang, Hua; Kauppinen, Esko; Lipsanen, Harri

2016-12-16

We report on the synthesis of Au-catalyzed InP nanowires (NWs) on low-cost glass substrates. Ultra-dense and ultra-long (up to ∼250 μm) InP NWs, with an exceptionally high growth rate of ∼25 μm min -1 , were grown directly on glass using metal organic vapor phase epitaxy (MOVPE). Structural properties of InP NWs grown on glass were similar to the ones grown typically on Si substrates showing many structural twin faults but the NWs on glass always exhibited a stronger photoluminescence (PL) intensity at room temperature. The PL measurements of NWs grown on glass reveal two additional prominent impurity related emission peaks at low temperature (10 K). In particular, the strongest unusual emission peak with an activation energy of 23.8 ± 2 meV was observed at 928 nm. Different possibilities including the role of native defects (phosphorus and/or indium vacancies) are discussed but most likely the origin of this PL peak is related to the impurity incorporation from the glass substrate. Furthermore, despite the presence of suspected impurities, the NWs on glass show outstanding light absorption in a wide spectral range (60%-95% for λ = 300-1600 nm). The optical properties and the NW growth mechanism on glass is discussed qualitatively. We attribute the exceptionally high growth rate mostly to the atmospheric pressure growth conditions of our MOVPE reactor and stronger PL intensity on glass due to the impurity doping. Overall, the III-V NWs grown on glass are similar to the ones grown on semiconductor substrates but offer additional advantages such as low-cost and light transparency.

A positron annihilation study of compensation defects responsible for conduction-type conversions in LEC-grown InP

International Nuclear Information System (INIS)

Shan, Y.Y.; Ling, C.C.; Fung, S.; Beling, C.D.; Zhao, Y.W.

2001-01-01

Positron annihilation techniques have been employed to investigate the formation of vacancy type of compensation defects in undoped LEC-grown InP. N-type InP becomes p-type semiconducting by short time annealing at 700 C, and then turns to be n-type again after further annealing but with a much higher resistivity. Positron lifetime measurements show that the positron average lifetime τ av increases to a high value of 247ps for the first n-type to p-type conversion and decreases to 240ps for the following p-type to n-type conversion. τ av increases slightly and saturates at 242ps upon further annealing. The results of positron annihilation Doppler-broadening measurements are consistent with the positron lifetime measurements. The correlation between the characteristics of positron annihilation and the conversions of conduction type indicates that the formation of vacancy type defects and the progressive variation of their concentrations during annealing are critical to the electrical properties of the bulk InP material. (orig.)

Effect of sulphur-doping on the formation of deep centers in n-type InP under irradiation

International Nuclear Information System (INIS)

Kol'chenko, T.I.; Lomako, V.M.; Moroz, S.E.

1988-01-01

Effect of sulfur-doping on the efficiency of electron trap formation in InP under irradiation was studied using deep level capacity nonstationary spectroscopy method (DLCNS). Structures with Schottky barrier based on epitaxial InP films with ∼10μm thickness (n 0 =8x10 14 -6x10 17 cm -3 ) were irradiated with 60 Co γ-quanta at 40 deg C; the particle flux intensity made up ∼10 12 cm -2 xs -1 . Experimental results presented allow one to conclude that InP doping with sulfur up to n 0 =6x10 17 cm -3 in contrast to the case of silicon doping does not produce a notable effect on the electron trap formation efficiency under irradiation. The observed reduction of configuration-bistable M-center introduction rate in samples with n 0 >10 16 cm -3 is explained by the change of filling of E c -0.12 eV level belonging to unknown X defect

DIE RECHTSPOSITION DER EHRLICHEN UND UNEHRLICHEN BESITZER IN BEZUG AUF EIGENTÜMER

Directory of Open Access Journals (Sweden)

Jadranko Jug

2017-01-01

Full Text Available Diese Arbeit beschäftigt sich mit den Problemen, die mit der rechtlichen Stellung ehrlicher und unehrlicher Besitzer im Verhältnis zum Eigentümer verbunden sind, d.h. sie analysiert die Rechte des Besitzers und die Forderungen, welche der Besitzer vom Eigentümer verlangen kann, damit der Besitzer sein Besitz abgibt. Im Gegensatz dazu werden die Rechte und Anforderungen des Eigentümers in Bezug auf ehrliche und unehrliche Besitzer analysiert. In der Praxis entstehen Dilemmas, wie die wesentlichen und vorteilhaften Ausgaben des ehrlichen Besitzers bestimmt werden, welche Voraussetzungen es sind und bis zu welchen Zeitpunkt das Zurückbehaltungsrecht für die Vergütung dieser Ausgaben ausgeübt werden kann, wann die Verjährungsfrist anfängt und von welcher Bedeutung die Bestimmungen des Zivilverfahrensgesetzes in Bezug auf die ungerechte Anreicherung, die Geschäftsführung ohne Anordnung oder das Zurückbehaltungsrecht sind und welche Bestimmungen diese und ähnliche Fragen regeln. Die Antworten auf einige von diesen Dilemmas sind in der Rechtsprechung vorgelegt, weshalb die Analyse und Forschung der Rechtsprechung, insbesondere Entscheidungen des Obersten Gerichtshofs der Republik Kroatien, die grundlegende Methode dieser Arbeit ist. In der Einführung bietet diese Artikel die grundlegenden Merkmale des Begriffs des Besitzens und des Eigentumsbesitzes und die Art und Qualität des Besitzes an, um eine Grundlage für die anschließende Analyse der Rechtsposition des Eigentumsbesitzers in Bezug auf den Eigentümer zu schaffen.

Self-Catalyzed Growth and Characterization of In(As)P Nanowires on InP(111)B Using Metal-Organic Chemical Vapor Deposition.

Science.gov (United States)

Park, Jeung Hun; Pozuelo, Marta; Setiawan, Bunga P D; Chung, Choong-Heui

2016-12-01

We report the growth of vertical -oriented InAs x P1-x (0.11 ≤ x ≤ 0.27) nanowires via metal-organic chemical vapor deposition in the presence of indium droplets as catalysts on InP(111)B substrates at 375 °C. Trimethylindium, tertiarybutylphosphine, and tertiarybutylarsine are used as the precursors, corresponding to P/In and As/In molar ratios of 29 and 0.01, respectively. The as-grown nanowire growth morphologies, crystallinity, composition, and optical characteristics are determined using a combination of scanning and transmission electron microscopies, electron diffraction, and X-ray photoelectron, energy dispersive X-ray, and Raman spectroscopies. We find that the InAs x P1-x nanowires are tapered with narrow tops, wider bases, and In-rich In-As alloy tips, characteristic of vapor-liquid-solid process. The wires exhibit a mixture of zinc blende and wurtzite crystal structures and a high density of structural defects such as stacking faults and twins. Our results suggest that the incorporation of As into InP wires decreases with increasing substrate temperature. The Raman spectra obtained from the In(As)P nanowires reveal a red-shift and lower intensity of longitudinal optical mode relative to both InP nanowires and InP(111)B bulk, due to the incorporation of As into the InP matrix.

Photoluminescence properties of ZnO films grown on InP by thermally oxidizing metallic Zn films

CERN Document Server

Chen, S J; Zhang, J Y; Lu, Y M; Shen, D Z; Fan, X W

2003-01-01

Photoluminescence (PL) properties of ZnO films grown on (001) InP substrates by thermal oxidization of metallic Zn films, in which oxygen vacancies and interstitial Zn ions are compensated by P ions diffusing from (001) InP substrates, are investigated. X-ray diffraction spectra indicate that P ions have diffused into the Zn films and chemically combined with Zn ions to form Zn sub 3 P sub 2. Intense free exciton emission dominates the PL spectra of ZnO films with very weak deep-level emission. Low-temperature PL spectra at 79 K are dominated by neutral-donor bound exciton emission at 3.299 eV (I sub 4) with a linewidth of 17.3 meV and neutral-acceptor bound exciton emission at 3.264 eV. The free exciton emission increases with increasing temperature and eventually dominates the emission spectrum for temperature higher than 170 K. Furthermore, the visible emission around 2.3 eV correlated with oxygen deficiencies and interstitial Zn defects was quenched to a remarkable degree by P diffusing from InP substrate...

Correlations for damage in diffused-junction InP solar cells induced by electron and proton irradiation

International Nuclear Information System (INIS)

Yamaguchi, M.; Takamoto, T.; Taylor, S.J.; Walters, R.J.; Summers, G.P.; Flood, D.J.; Ohmori, M.

1997-01-01

The damage to diffused-junction n + -p InP solar cells induced by electron and proton irradiations over a wide range of energy from 0.5 to 3 MeV and 0.015 to 20 MeV, respectively, has been examined. The experimental electron and proton damage coefficients have been analyzed in terms of displacement damage dose, which is the product of the particle fluence and the calculated nonionizing energy loss [G. P. Summers, E. A. Burke, R. Shapiro, S. R. Messenger, and R. J. Walters, IEEE Trans. Nucl. Sci. 40, 1300 (1993).] Degradation of InP cells due to irradiation with electrons and protons with energies of more than 0.5 MeV show a single curve as a function of displacement damage dose. Based on the deep-level transient spectroscopy analysis, damage equivalence between electron and proton irradiation is discussed. InP solar cells are confirmed to be substantially more radiation resistant than Si and GaAs-on-Ge cells. copyright 1997 American Institute of Physics

Selective Epitaxy of InP on Si and Rectification in Graphene/InP/Si Hybrid Structure.

Science.gov (United States)

Niu, Gang; Capellini, Giovanni; Hatami, Fariba; Di Bartolomeo, Antonio; Niermann, Tore; Hussein, Emad Hameed; Schubert, Markus Andreas; Krause, Hans-Michael; Zaumseil, Peter; Skibitzki, Oliver; Lupina, Grzegorz; Masselink, William Ted; Lehmann, Michael; Xie, Ya-Hong; Schroeder, Thomas

2016-10-12

The epitaxial integration of highly heterogeneous material systems with silicon (Si) is a central topic in (opto-)electronics owing to device applications. InP could open new avenues for the realization of novel devices such as high-mobility transistors in next-generation CMOS or efficient lasers in Si photonics circuitry. However, the InP/Si heteroepitaxy is highly challenging due to the lattice (∼8%), thermal expansion mismatch (∼84%), and the different lattice symmetries. Here, we demonstrate the growth of InP nanocrystals showing high structural quality and excellent optoelectronic properties on Si. Our CMOS-compatible innovative approach exploits the selective epitaxy of InP nanocrystals on Si nanometric seeds obtained by the opening of lattice-arranged Si nanotips embedded in a SiO 2 matrix. A graphene/InP/Si-tip heterostructure was realized on obtained materials, revealing rectifying behavior and promising photodetection. This work presents a significant advance toward the monolithic integration of graphene/III-V based hybrid devices onto the mainstream Si technology platform.

Photoluminescence properties of ZnO films grown on InP by thermally oxidizing metallic Zn films

International Nuclear Information System (INIS)

Chen, S J; Liu, Y C; Zhang, J Y; Lu, Y M; Shen, D Z; Fan, X W

2003-01-01

Photoluminescence (PL) properties of ZnO films grown on (001) InP substrates by thermal oxidization of metallic Zn films, in which oxygen vacancies and interstitial Zn ions are compensated by P ions diffusing from (001) InP substrates, are investigated. X-ray diffraction spectra indicate that P ions have diffused into the Zn films and chemically combined with Zn ions to form Zn 3 P 2 . Intense free exciton emission dominates the PL spectra of ZnO films with very weak deep-level emission. Low-temperature PL spectra at 79 K are dominated by neutral-donor bound exciton emission at 3.299 eV (I 4 ) with a linewidth of 17.3 meV and neutral-acceptor bound exciton emission at 3.264 eV. The free exciton emission increases with increasing temperature and eventually dominates the emission spectrum for temperature higher than 170 K. Furthermore, the visible emission around 2.3 eV correlated with oxygen deficiencies and interstitial Zn defects was quenched to a remarkable degree by P diffusing from InP substrates

A contribution to the investigation of the properties of the Au-Fe system

International Nuclear Information System (INIS)

Vano, M.; Sitek, J.; Cirak, J.

1976-01-01

Moessbauer spectroscopy, an electronic microanalyzer and X-ray diffractometry were used to study the properties of an Au-Fe solid solution during its preparation by installing Fe atoms into the Au matrix by diffusion heating at a temperature from 550 to 850 degC. On the basis of such measurements, the suitable heating temperature was determined at 850 degC; the Debye-Waller factor for Au-Fe is f=0.604+-0.040 and two configurations of Fe atoms in the Au crystal lattice were found. (author)

Unraveling aminophosphine redox mechanisms for glovebox-free InP quantum dot syntheses.

Science.gov (United States)

Laufersky, Geoffry; Bradley, Siobhan; Frécaut, Elian; Lein, Matthias; Nann, Thomas

2018-05-10

The synthesis of colloidal indium phosphide quantum dots (InP QDs) has always been plagued by difficulties arising from limited P3- sources. Being effectively restricted to the highly pyrophoric tris(trimethylsilyl) phosphine (TMS3P) creates complications for the average chemist and presents a significant risk for industrially scaled reactions. The adaptation of tris(dialkylamino) phosphines for these syntheses has garnered attention, as these new phosphines are much safer and can generate nanoparticles with competitive photoluminescence properties to those from (TMS)3P routes. Until now, the reaction mechanics of this precursor were elusive due to many experimental optimizations, such as the inclusion of a high concentration of zinc salts, being atypical of previous InP syntheses. Herein, we utilize density functional theory calculations to outline a logical reaction mechanism. The aminophosphine precursor is found to require activation by a zinc halide before undergoing a disproportionation reaction to self-reduce this P(iii) material to a P(-iii) source. We use this understanding to adapt this precursor for a two-pot nanoparticle synthesis in a noncoordinating solvent outside of glovebox conditions. This allowed us to generate spherical InP/ZnS nanoparticles possessing fluorescence quantum yields >55% and lifetimes as fast as 48 ns, with tunable emission according to varying zinc halide acidity. The development of high quality and efficient InP QDs with this safer aminophosphine in simple Schlenk environments will enable a broader range of researchers to synthesize these nontoxic materials for a variety of high-value applications.

The etching of InP in HCl solutions : a chemical mechanism

NARCIS (Netherlands)

Notten, P.H.L.

1984-01-01

The etch rate of InP in solutions of high HCl concentration was shown to be independent of the applied potential ina wide potential range negative with respect to the flatband value. Dissolution of the solid led to the formation of PH3.The etch rate, which was not mass-transport controlled, was

Electrical and thermal characterization of single and multi-finger InP DHBTs

DEFF Research Database (Denmark)

Midili, Virginio; Nodjiadjim, V.; Johansen, Tom Keinicke

2015-01-01

This paper presents the characterization of single and multi-finger Indium Phosphide Double Heterojunction Bipolar transistors (InP DHBTs). It is used as the starting point for technology optimization. Safe Operating Area (SOA) and small signal AC parameters are investigated along with thermal ch...

Formation of quantum wires and dots on InP(001) by As/P exchange

International Nuclear Information System (INIS)

Yang, Haeyeon; Ballet, P.; Salamo, G. J.

2001-01-01

We report on the use of in situ scanning tunneling microscopy to study As/P exchange on InP(001) surfaces by molecular beam epitaxy. Results demonstrate that the exchange process can be controlled to selectively produce either quantum wires or quantum dots. 15 nm wide self-assembled nanowires are observed, and they are elongated along the dimer row direction of the InP(001)-2x4 surface with a length of over 1 μm and flat top 2x4 surfaces. In addition, when the nanowires are annealed with no arsenic overpressure, the surface reconstruction transforms from 2x4 to 4x2 and the nanowires transform into dots with a rectangular base and flat top. [copyright] 2001 American Institute of Physics

Control of morphology and crystal purity of InP nanowires by variation of phosphine flux during selective area MOMBE

Science.gov (United States)

Kelrich, A.; Dubrovskii, V. G.; Calahorra, Y.; Cohen, S.; Ritter, D.

2015-02-01

We present experimental results showing how the growth rate, morphology and crystal structure of Au-catalyzed InP nanowires (NWs) fabricated by selective area metal organic molecular beam epitaxy can be tuned by the growth parameters: temperature and phosphine flux. The InP NWs with 20-65 nm diameters are grown at temperatures of 420 and 480 °C with the PH3 flow varying from 1 to 9 sccm. The NW tapering is suppressed at a higher temperature, while pure wurtzite crystal structure is preferred at higher phosphine flows. Therefore, by combining high temperature and high phosphine flux, we are able to fabricate non-tapered and stacking fault-free InP NWs with the quality that other methods rarely achieve. We also develop a model for NW growth and crystal structure which explains fairly well the observed experimental tendencies.

Effects of surface states on device and interconnect isolation in GaAs MESFET and InP MISFET integrated circuits

International Nuclear Information System (INIS)

Hasegawa, H.; Kitagawa, T.; Masuda, H.; Yano, H.; Ohno, H.

1985-01-01

Surface electrical breakdown and side-gating which cause failure of device and interconnect isolation are investigated for GaAs MESFET and InP MISFET integrated circuit structures. Striking differences in behavior are observed between GaAs and InP as regards to the surface conduction, surface breakdown and side-gating. These differences are shown to be related to the surface state properties of the insulator-semiconductor interface. In GaAs, high density of surface states rather than bulk trap states control the surface I-V characteristics and side-gating, causing serious premature avalanche breakdown and triggering side-gating at a low nominal field intensity of 1-3 kV/cm. On the other hand, InP MISFET integrated circuits are virtually free from these premature breakdown and side-gating effect under normal dark operating condition because of very low surface state density

The Horizontal Ice Nucleation Chamber (HINC): INP measurements at conditions relevant for mixed-phase clouds at the High Altitude Research Station Jungfraujoch

Science.gov (United States)

Lacher, Larissa; Lohmann, Ulrike; Boose, Yvonne; Zipori, Assaf; Herrmann, Erik; Bukowiecki, Nicolas; Steinbacher, Martin; Kanji, Zamin A.

2017-12-01

In this work we describe the Horizontal Ice Nucleation Chamber (HINC) as a new instrument to measure ambient ice-nucleating particle (INP) concentrations for conditions relevant to mixed-phase clouds. Laboratory verification and validation experiments confirm the accuracy of the thermodynamic conditions of temperature (T) and relative humidity (RH) in HINC with uncertainties in T of ±0.4 K and in RH with respect to water (RHw) of ±1.5 %, which translates into an uncertainty in RH with respect to ice (RHi) of ±3.0 % at T > 235 K. For further validation of HINC as a field instrument, two measurement campaigns were conducted in winters 2015 and 2016 at the High Altitude Research Station Jungfraujoch (JFJ; Switzerland, 3580 m a. s. l. ) to sample ambient INPs. During winters 2015 and 2016 the site encountered free-tropospheric conditions 92 and 79 % of the time, respectively. We measured INP concentrations at 242 K at water-subsaturated conditions (RHw = 94 %), relevant for the formation of ice clouds, and in the water-supersaturated regime (RHw = 104 %) to represent ice formation occurring under mixed-phase cloud conditions. In winters 2015 and 2016 the median INP concentrations at RHw = 94 % was below the minimum detectable concentration. At RHw = 104 %, INP concentrations were an order of magnitude higher, with median concentrations in winter 2015 of 2.8 per standard liter (std L-1; normalized to standard T of 273 K and pressure, p, of 1013 hPa) and 4.7 std L-1 in winter 2016. The measurements are in agreement with previous winter measurements obtained with the Portable Ice Nucleation Chamber (PINC) of 2.2 std L-1 at the same location. During winter 2015, two events caused the INP concentrations at RHw = 104 % to significantly increase above the campaign average. First, an increase to 72.1 std L-1 was measured during an event influenced by marine air, arriving at the JFJ from the North Sea and the Norwegian Sea. The contribution from anthropogenic or other

Characterization of ion-irradiation-induced nanodot structures on InP surfaces by atom probe tomography.

Science.gov (United States)

Gnaser, Hubert; Radny, Tobias

2015-12-01

Surfaces of InP were bombarded by 1.9 keV Ar(+) ions under normal incidence. The total accumulated ion fluence the samples were exposed to was varied from 1 × 10(17) cm(-2) to 3 × 10(18)cm(-2) and ion flux densities f of (0.4-2) × 10(14) cm(-2) s(-1) were used. Nanodot structures were found to evolve on the surface from these ion irradiations, their dimensions however, depend on the specific bombardment conditions. The resulting surface morphology was examined by atomic force microscopy (AFM). As a function of ion fluence, the mean radius, height, and spacing of the dots can be fitted by power-law dependences. In order to determine possible local compositional changes in these nanostructures induced by ion impact, selected samples were prepared for atom probe tomography (APT). The results indicate that by APT the composition of individual InP nanodots evolving under ion bombardment could be examined with atomic spatial resolution. At the InP surface, the values of the In/P concentration ratio are distinctly higher over a distance of ~1 nm and amount to 1.3-1.8. However, several aspects critical for the analyses were identified: (i) because of the small dimensions of these nanostructures a successful tip preparation proved very challenging. (ii) The elemental compositions obtained from APT were found to be influenced pronouncedly by the laser pulse energy; typically, low energies result in the correct stoichiometry whereas high ones lead to an inhomogeneous evaporation from the tips and deviations from the nominal composition. (iii) Depending again on the laser energy, a prolific emission of Pn cluster ions was observed, with n ≤ 11. Copyright © 2015. Published by Elsevier B.V.

Effect of uniaxial stress on free and bismuth-bound excitons in InP

International Nuclear Information System (INIS)

Weber, G.; Ruehle, W.

1979-01-01

The reduction of the shear deformation potentials of holes bound to the isoelectronic impurity Bi in InP is determined by piezoluminescence. It is compared with the corresponding reduction for holes bound to the Coulomb-type acceptors C and Zn. The theory for an effective mass acceptor describes well the cases of C and Zn. However, additional effects as local strain and Stark fields must be involved in the case of Bi leading to an extremely large reduction of the deformation potentials. No change in binding energy with applied stress as well as no exchange splitting of the Bi-bound exciton can be detected within experimental accuracy. The stress dependence of the free exciton reflectance reveals values for the band deformation potentials and a value of 0.07 meV for the exchange splitting of the free exciton in InP. (author)

Crystal Structure of the N-Terminal RNA Recognition Motif of mRNA Decay Regulator AUF1

Directory of Open Access Journals (Sweden)

Young Jun Choi

2016-01-01

Full Text Available AU-rich element binding/degradation factor 1 (AUF1 plays a role in destabilizing mRNAs by forming complexes with AU-rich elements (ARE in the 3′-untranslated regions. Multiple AUF1-ARE complexes regulate the translation of encoded products related to the cell cycle, apoptosis, and inflammation. AUF1 contains two tandem RNA recognition motifs (RRM and a Gln- (Q- rich domain in their C-terminal region. To observe how the two RRMs are involved in recognizing ARE, we obtained the AUF1-p37 protein covering the two RRMs. However, only N-terminal RRM (RRM1 was crystallized and its structure was determined at 1.7 Å resolution. It appears that the RRM1 and RRM2 separated before crystallization. To demonstrate which factors affect the separate RRM1-2, we performed limited proteolysis using trypsin. The results indicated that the intact proteins were cleaved by unknown proteases that were associated with them prior to crystallization. In comparison with each of the monomers, the conformations of the β2-β3 loops were highly variable. Furthermore, a comparison with the RRM1-2 structures of HuR and hnRNP A1 revealed that a dimer of RRM1 could be one of the possible conformations of RRM1-2. Our data may provide a guidance for further structural investigations of AUF1 tandem RRM repeat and its mode of ARE binding.

Impact of P/In flux ratio and epilayer thickness on faceting for nanoscale selective area growth of InP by molecular beam epitaxy.

Science.gov (United States)

Fahed, M; Desplanque, L; Coinon, C; Troadec, D; Wallart, X

2015-07-24

The impact of the P/In flux ratio and the deposited thickness on the faceting of InP nanostructures selectively grown by molecular beam epitaxy (MBE) is reported. Homoepitaxial growth of InP is performed inside 200 nm wide stripe openings oriented either along a [110] or [1-10] azimuth in a 10 nm thick SiO2 film deposited on an InP(001) substrate. When varying the P/In flux ratio, no major shape differences are observed for [1-10]-oriented apertures. On the other hand, the InP nanostructure cross sections strongly evolve for [110]-oriented apertures for which (111)B facets are more prominent and (001) ones shrink for large P/In flux ratio values. These results show that the growth conditions allow tailoring the nanocrystal shape. They are discussed in the framework of the equilibrium crystal shape model using existing theoretical calculations of the surface energies of different low-index InP surfaces as a function of the phosphorus chemical potential, directly related to the P/In ratio. Experimental observations strongly suggest that the relative (111)A surface energy is probably smaller than the calculated value. We also discuss the evolution of the nanostructure shape with the InP-deposited thickness.

Study of discharge in quiescent plasma machine of the INPE

International Nuclear Information System (INIS)

Ferreira, J.G.; Ferreira, J.L.; Ludwig, G.O.; Maciel, H.S.

1988-12-01

Measurements of principal plasma parameters produced by quiescent plasma machine of the Instituto de Pesquisas Espaciais (INPE) for current of 500 mA and several values of pressure and discharge power are presented. A qualitative interpretation for obtained results is done and a simple model for plasma density is compared with experimental values. The conditions of cathode operation are also investigated. (M.C.K.)

Phosphine synthetic route features and postsynthetic treatment of InP quantum dots

International Nuclear Information System (INIS)

Mordvinova, Natalia; Vinokurov, Alexander; Dorofeev, Sergey; Kuznetsova, Tatiana; Znamenkov, Konstantin

2014-01-01

Highlights: • Quantum dots with average diameter of 3–5 nm were synthesized. • PH 3 was used as novel phosphorous precursor. • Electrophoresis was demonstrated to be an effective method of purification of QDs. • Photoeching leads to quantum yields about 20%. • The concentration and time dependencies for photoetching of QDs were obtained. -- Abstract: In this paper we report on the development of synthesis of InP quantum dots with a gaseous phosphine PH 3 as a source of phosphorus and myristic acid and TOP/TOPO as stabilizers. Samples synthesized using myristic acid as stabilizer at relatively low temperatures were found to contain admixture of In(OH) 3 . We studied the influence of HF concentration and duration of illumination on luminescence properties of InP quantum dots during photoetching process. Quantum yields of photoetched samples reached about 20%. Additionally, electrophoresis as a new technique of purification and size-depended separation of synthesized quantum dots was developed

Health and Environmental Risk Communication in Thailand: An Analysis of Agency Staff’s Perspectives on Risk Communication With External Stakeholders

Directory of Open Access Journals (Sweden)

Seth Tuler

2012-01-01

Full Text Available Health and environmental agencies are routinely called upon to provide risk-related information to the public-at-large and to more narrowly defined audiences, such as children, pregnant women, or labourers. While a large body of guidance is available, it is often general and transferability to new contexts is not well understood. In particular, the relevance of this guidance for South-East Asia is not clear. This paper reports the results of a study, using Q method, that aimed to develop a better understanding of officers’ and staff’s perspectives on health and environmental risk communication within a single regulatory agency in Thailand, the Pollution Control Department. The results demon- strate that there are multiple perspectives, and they are unrelated to roles or experience. This study contributes to a deeper understanding of the ways that officers and staff within a national agency with important responsibilities for health and environmental risk communication in Thailand think about these responsibilities and how to achieve them. ----- Gesundheits- und Umweltbehörden erfüllen üblicherweise die Rolle der allgemeinen Öffentlichkeit, aber auch speziellen Zielgruppen wie Kindern, Schwangeren oder ArbeiterInnen, risikobasierte Infor- mationen zur Verfügung zu stellen. Trotz vorhandener Beratung ist diese oft sehr allgemein gehalten und eine Übertragbarkeit auf neue Kontexte ist schwierig. Besonders die Relevanz der Beratung in Bezug auf Südostasien ist oft unklar. Dieser Artikel berichtet über die Ergebnisse einer auf der Q-Methode basierenden Studie, die versucht, ein besseres Verständnis über die Perspektiven von Führungskräften und MitarbeiterInnen in Bezug auf Gesundheits- und Umweltrisikokommunikation innerhalb der thailändischen Behörde für Umweltschutz zu gewinnen. Die Ergebnisse zeigen, dass es, unabhängig von den Rollen und Erfahrungen der Befragten, sehr unterschiedliche Perspektiven über Verantwortlichkeiten

Effect of reactor neutron radiation and temperature on the structure of InP single crystals

International Nuclear Information System (INIS)

Bojko, V.M.; Kolin, N.G.; Merkurisov, D.I.; Bublik, V.T.; Voronova, M.I.; Shcherbachev, K.D.

2006-01-01

The structural characteristics of InP single crystals have been investigated depending on the radiation effects produced by fast and full spectrum neutrons and subsequent heat treatment. A lattice period in InP single crystals decreases under neutron irradiation. Fast neutrons make the main contribution into the change of the lattice period. Availability of the thermal neutrons initiates the formation of Sn atoms, but does not make a significant influence on the change of the lattice period. Heat treatment of the irradiated samples up to 600 deg C causes the annealing of radiation defects and recovery of the lattice period. With increasing neutron fluences a lattice period becomes even higher than before irradiation [ru

Nondestructive evaluation of differently doped InP wafers by time-resolved four-wave mixing technique

International Nuclear Information System (INIS)

Kadys, A.; Sudzius, M.; Jarasiunas, K.; Mao Luhong; Sun Niefeng

2006-01-01

Photoelectric properties of semi-insulating, differently doped, and undoped indium phosphide wafers, grown by the liquid encapsulation Czochralski method, have been investigated by time-resolved picosecond four-wave mixing technique. Deep defect related carrier generation, recombination, and transport properties were investigated experimentally by measuring four-wave mixing kinetics and exposure characteristics. The presence of deep donor states in undoped InP was confirmed by a pronounced effect of a space charge electric field to carrier transport. On the other hand, the recharging dynamics of electrically active residual impurities was observed in undoped and Fe-doped InP through the process of efficient trapping of excess carriers. The bipolar diffusion coefficients and mobilities were determined for the all wafers

Experimental investigations on inlet flow of ducted turbines. A contribution to turbine intake optimization; Experimentelle Untersuchungen zur Anstroemung von Rohrturbinen. Ein Beitrag zur Optimierung des Turbineneinlaufes

Energy Technology Data Exchange (ETDEWEB)

Godde, D. [Technische Univ. Muenchen, Obernach (Germany). Versuchsanstalt fuer Wasserbau und Wasserwirtschaft (Oskar-von-Miller-Institut)

1994-12-31

In the borderline region between hydraulic engineering and turbine technology, a wide range of conjectures on cause-effect relationships in connection with turbine inflow have existed for quite some time. It is remarkable that these conjectures, which are partly based on observations and `a feeling for hydraulics`, have not as yeet been subject to scientific scrutiny. This is more the remarkable when one considers the requirements specified by turbine manufacturers concerning the quality of the intake flow based upon such uncertain conjectures. However, extensive contructional measures are sometimes necessary to satisfy these requirements, which are also formulated in general terms in numerous publications. Within the scope of this treatise the new investigations in this field - at a model and a turbine test rig - concentrate on the separating pier, the trash rack and the adjoining convergence channel in the intake region of bulb turbines. The experimental results serve to clarify a number of relationships, partly negate or confirm previous assumptions and relativize some of the requirements. Although the results must be assessed in the light of model-specific restrictions and the characteristics of the turbines tested, they are nevertheless generally applicable to a certain degree owing to the wide scope of the investigations. (AKF) [Deutsch] Im Grenzbereich zwischen Wasserbau und Turbinentechnologie besteht seit geraumer Zeit zu Fragen der Turbinenanstroemung eine Reihe von Vermutungen ueber Ursache-Wirkung-Zusammenhaenge. Es ist bemerkenswert, dass diese zum Teil auf Beobachtungen und `hydraulischem Gefuehl` basierenden Deutungen bisher keiner wissenschaftlichen Ueberpruefung unterzogen wurden. Das ist um so bemerkenswerter, als auf der Grundlage solcher unsicheren Vermutungen seitens der Turbinenhersteller nun Anforderungen an die Stroemungsqualitaet im Einlaufbereich erhoben werden. Es erfordert aber mitunter grossen baulichen Aufwand, diese Forderungen zu

Defect formation in n-type InP at elevated temperatures of irradiation

International Nuclear Information System (INIS)

Kozlovskij, V.V.; Kol'chenko, T.I.; Lomako, V.M.; Moroz, S.E.

1990-01-01

Effect of irradiation temperature within 25-250 deg C traps in InP. Rate of most deep level introduction, as well as, rate of charge carrier removing at the increase of irradiation temperature are shown to decrease and it is explained by defect annealing occuring simultaneously with irradiation

Der Effekt von Hohlraumströmung auf den Druckausgleich

NARCIS (Netherlands)

Bentum, van C.A.; Suma, A.B.; Kalkman, I.M.; Koster, T.; Geurts, C.P.W.; Ruscheweyh, xx

2011-01-01

KURZFASSUNG. Hinterlüftete Fassaden sind ein häufig verwendetes System der Verkleidung. Auf der Vorderseite eines Hohlraums wird eine durchlässige äußere Schichtangebracht. Über den Raum selbst wird ein Druckausgleich zwischen der Außenseite und der Innenseite des Hohlraums erzielt. Dieser Effekt

AES, EELS and TRIM simulation method study of InP(100 subjected to Ar+, He+ and H+ ions bombardment.

Directory of Open Access Journals (Sweden)

Abidri B.

2012-06-01

Full Text Available Auger Electron Spectroscopy (AES and Electron Energy Loss Spectroscopy (EELS have been performed in order to investigate the InP(100 surface subjected to ions bombardment. The InP(100 surface is always contaminated by carbon and oxygen revealed by C-KLL and O-KLL AES spectra recorded just after introduction of the sample in the UHV spectrometer chamber. The usually cleaning process of the surface is the bombardment by argon ions. However, even at low energy of ions beam (300 eV indium clusters and phosphorus vacancies are usually formed on the surface. The aim of our study is to compare the behaviour of the surface when submitted to He+ or H+ ions bombardment. The helium ions accelerated at 500V voltage and for 45 mn allow removing contaminants but induces damaged and no stoichiometric surface. The proton ions were accelerated at low energy of 500 eV to bombard the InP surface at room temperature. The proton ions broke the In-P chemical bonds to induce the formation of In metal islands. Such a chemical reactivity between hydrogen and phosphorus led to form chemical species such as PH and PH3, which desorbed from the surface. The chemical susceptibly and the small size of H+ advantaged their diffusion into bulk. Since the experimental methods alone were not able to give us with accuracy the disturbed depth of the target by these ions. We associate to the AES and EELS spectroscopies, the TRIM (Transport and Range of Ions in Matter simulation method in order to show the mechanism of interaction between Ar+, He+ or H+ ions and InP and determine the disturbed depth of the target by argon, helium or proton ions.

Structural and electronic properties of zigzag InP nanoribbons with Stone–Wales type defects

International Nuclear Information System (INIS)

Longo, R C; Carrete, J; Varela, L M; Gallego, L J

2016-01-01

By means of density-functional-theoretic calculations, we investigate the structural and electronic properties of a hexagonal InP sheet and of hydrogen-passivated zigzag InP nanoribbons (ZInPNRs) with Stone–Wales (SW)-type defects. Our results show that the influence of this kind of defect is not limited to the defected region but it leads to the formation of ripples that extend across the systems, in keeping with the results obtained recently for graphene and silicene sheets. The presence of SW defects in ZInPNRs causes an appreciable broadening of the band gap and transforms the indirect-bandgap perfect ZInPNR into a direct-bandgap semiconductor. An external transverse electric field, regardless of its direction, reduces the gap in both the perfect and defective ZInPNRs. (paper)

Highly doped InP as a low loss plasmonic material for mid-IR region

DEFF Research Database (Denmark)

Panah, Mohammad Esmail Aryaee; Takayama, Osamu; Morozov, S. V.

2016-01-01

by fitting the calculated infrared reflectance spectra to the measured ones. The retrieved permittivity was then used to simulate surface plasmon polaritons (SPPs) propagation on flat and structured surfaces, and the simulation results were verified in direct experiments. SPPs at the top and bottom......We study plasmonic properties of highly doped InP in the mid-infrared (IR) range. InP was grown by metal-organic vapor phase epitaxy (MOVPE) with the growth conditions optimized to achieve high free electron concentrations by doping with silicon. The permittivity of the grown material was found...... interfaces of the grown epilayer were excited by the prism coupling. A high-index Ge hemispherical prism provides efficient coupling conditions of SPPs on flat surfaces and facilitates acquiring their dispersion diagrams. We observed diffraction into symmetry-prohibited diffraction orders stimulated...

Modeling of InP HBTs in Transferred-Substrate Technology for Millimeter-Wave Applications

DEFF Research Database (Denmark)

Johansen, Tom Keinicke; Rudolph, Matthias; Jensen, Thomas

2013-01-01

In this paper, the modeling of InP heterojunction bipolar transistors (HBTs) in transferred substrate (TS) technology is investigated. At first, a direct parameter extraction methodology dedicated to III-V based HBTs is employed to determine the small-signal equivalent circuit parameters from...

Small- and large-signal modeling of InP HBTs in transferred-substrate technology

DEFF Research Database (Denmark)

Johansen, Tom Keinicke; Rudolph, Matthias; Jensen, Thomas

2014-01-01

In this paper, the small- and large-signal modeling of InP heterojunction bipolar transistors (HBTs) in transferred substrate (TS) technology is investigated. The small-signal equivalent circuit parameters for TS-HBTs in two-terminal and three-terminal configurations are determined by employing...

An InP HBT sub-harmonic mixer for E-band wireless communication

DEFF Research Database (Denmark)

Johansen, Tom Keinicke; Krozer, Viktor

2010-01-01

This paper reports on a novel balanced HBT subharmonic mixer (SHM) for E-band wireless communication. An LO spiral type Marchand balun is integrated with the SHM. The SHM has been fabricated in a InP double heterojunction bipolar transistor (DHBT) circuit-oriented technology with fT /fmax = 180GHz...

Objektverfolgung durch Fusion von Radar- und Monokameradaten auf Merkmalsebene für zukünftige Fahrerassistenzsysteme

OpenAIRE

Liu, Feng

2010-01-01

Die vorliegende Arbeit beschreibt eine neuartige Objektverfolgung durch Fusion von Radar- und Monokameradaten auf Merkmalsebene. Dabei werden zuerst die statistischen Fehlermodelle der Sensoren analysiert. Anschließend wird ein neues Assoziationsverfahren auf Basis der PDA-Methodik untersucht. Der Schwerpunkt dieser Arbeit ist die Behandlung der Objektdynmaik mit Hilfe eines adaptiven IMM-Filters. Schließlich wird die Thematik Objektklassifikation sowie Gassenbreiteschätzung beleuchtet.

Historismus in der Erwachsenenbildung und auf Reisen

OpenAIRE

Glaubitz, Gerald

2008-01-01

Historismus in der Erwachsenenbildung und auf Reisen This article deals with the area of adult education in connection with educational trips, a topic painfully neglected by the didactics of history so far. After outlining the latest developments in research and the relevance of the object of research, the dimension of the concept of 'histourism' will be examined more closely. A short but clear distinction from other academic disciplines such as tourism research or pedagogy of travelling w...

Macht auf das Tor! - Opens the gate!

Directory of Open Access Journals (Sweden)

Claudemir de Quadros

2011-09-01

Full Text Available Macht auf das Tor! (Abra o portão foi publicado, possivelmente, na primeira metade do século 20. Editado por Max Dirkschneider, Raimund Heuler e Felix Oberborbeck, apresenta músicas, rimas, piadas, jogos e canções.A edição apresentada nesse espaço é de um livro que pertence à família de Carolina Drebes, estudante do curso de Pedagogia do Centro Universitário Franciscano, Santa Maria/RS.

Exchange bias effect in Au-Fe3O4 nanocomposites

International Nuclear Information System (INIS)

Chandra, Sayan; Frey Huls, N A; Phan, M H; Srinath, S; Srikanth, H; Garcia, M A; Lee, Youngmin; Wang, Chao; Sun, Shouheng; 2UB, Universitat de Barcelona, Avenida Diagonal 647, E-08028 Barcelona (Spain))" data-affiliation=" (Departament de Física Fonamental and Institut de Nanociència i Nanotecnologia IN2UB, Universitat de Barcelona, Avenida Diagonal 647, E-08028 Barcelona (Spain))" >Iglesias, Òscar

2014-01-01

We report exchange bias (EB) effect in the Au-Fe 3 O 4 composite nanoparticle system, where one or more Fe 3 O 4 nanoparticles are attached to an Au seed particle forming ‘dimer’ and ‘cluster’ morphologies, with the clusters showing much stronger EB in comparison with the dimers. The EB effect develops due to the presence of stress at the Au-Fe 3 O 4 interface which leads to the generation of highly disordered, anisotropic surface spins in the Fe 3 O 4 particle. The EB effect is lost with the removal of the interfacial stress. Our atomistic Monte Carlo studies are in excellent agreement with the experimental results. These results show a new path towards tuning EB in nanostructures, namely controllably creating interfacial stress, and opens up the possibility of tuning the anisotropic properties of biocompatible nanoparticles via a controllable exchange coupling mechanism. (paper)

Measurement of third-order nonlinear susceptibility tensor in InP using extended Z-scan technique with elliptical polarization

Science.gov (United States)

Oishi, Masaki; Shinozaki, Tomohisa; Hara, Hikaru; Yamamoto, Kazunuki; Matsusue, Toshio; Bando, Hiroyuki

2018-05-01

The elliptical polarization dependence of the two-photon absorption coefficient β in InP has been measured by the extended Z-scan technique for thick materials in the wavelength range from 1640 to 1800 nm. The analytical formula of the Z-scan technique has been extended with consideration of multiple reflections. The Z-scan results have been fitted very well by the formula and β has been evaluated accurately. The three independent elements of the third-order nonlinear susceptibility tensor in InP have also been determined accurately from the elliptical polarization dependence of β.

The Horizontal Ice Nucleation Chamber (HINC: INP measurements at conditions relevant for mixed-phase clouds at the High Altitude Research Station Jungfraujoch

Directory of Open Access Journals (Sweden)

L. Lacher

2017-12-01

Full Text Available In this work we describe the Horizontal Ice Nucleation Chamber (HINC as a new instrument to measure ambient ice-nucleating particle (INP concentrations for conditions relevant to mixed-phase clouds. Laboratory verification and validation experiments confirm the accuracy of the thermodynamic conditions of temperature (T and relative humidity (RH in HINC with uncertainties in T of ±0.4 K and in RH with respect to water (RHw of ±1.5 %, which translates into an uncertainty in RH with respect to ice (RHi of ±3.0 % at T > 235 K. For further validation of HINC as a field instrument, two measurement campaigns were conducted in winters 2015 and 2016 at the High Altitude Research Station Jungfraujoch (JFJ; Switzerland, 3580 m a. s. l.  to sample ambient INPs. During winters 2015 and 2016 the site encountered free-tropospheric conditions 92 and 79 % of the time, respectively. We measured INP concentrations at 242 K at water-subsaturated conditions (RHw = 94 %, relevant for the formation of ice clouds, and in the water-supersaturated regime (RHw = 104 % to represent ice formation occurring under mixed-phase cloud conditions. In winters 2015 and 2016 the median INP concentrations at RHw = 94 % was below the minimum detectable concentration. At RHw = 104 %, INP concentrations were an order of magnitude higher, with median concentrations in winter 2015 of 2.8 per standard liter (std L−1; normalized to standard T of 273 K and pressure, p, of 1013 hPa and 4.7 std L−1 in winter 2016. The measurements are in agreement with previous winter measurements obtained with the Portable Ice Nucleation Chamber (PINC of 2.2 std L−1 at the same location. During winter 2015, two events caused the INP concentrations at RHw = 104 % to significantly increase above the campaign average. First, an increase to 72.1 std L−1 was measured during an event influenced by marine air, arriving at the JFJ

Spin glass transition in canonical AuFe alloys: A numerical study

International Nuclear Information System (INIS)

Zhang, Kai-Cheng; Li, Yong-Feng; Liu, Gui-Bin; Zhu, Yan

2012-01-01

Although spin glass transitions have long been observed in diluted magnetic alloys, e.g. AuFe and CuMn alloys, previous numerical studies are not completely consistent with the experiment results. The abnormal critical exponents of the alloys remain still puzzling. By employing parallel tempering algorithm with finite-size scaling analysis, we investigated the phase transitions in canonical AuFe alloys. Our results strongly support that spin glass transitions occur at finite temperatures in the alloys. The calculated critical exponents agree well with those obtained from experiments. -- Highlights: ► By simulation we investigated the abnormal critical exponents observed in canonical SG alloys. ► The critical exponents obtained from our simulations agree well with those measured from experiments. ► Our results strongly support that RKKY interactions lead to SG transitions at finite temperatures.

Changes in structure of the short-range order of the InP melt when heated

International Nuclear Information System (INIS)

Glazov, V.M.; Dovletov, K.; Nashel'skij, A.Ya.; Mamedov, M.M.

1977-01-01

An investigation of the temperature dependence of the InP viscosity has indicated an ''after-melting'' effect similar to that observed in other A 3 V 5 compounds having a sphalerite structure. The termodynamic parameters of the viscous flow of indium phosphide melt have been calculated, and a suggestion has been made on the loosening of the short-range order structure of the melt during the period preceding solidification. With the similarity in the behaviour of InP and of A 3 Sb compound melts as a basis, a suggestion has been put forward that the influence of the thermal dissociation upon the character of the changes in the short-range order structure directly after transition from the solid to the liquid phase is negligible

Valence-band splitting energies in wurtzite InP nanowires: Photoluminescence spectroscopy and ab initio calculations

Science.gov (United States)

Gadret, E. G.; Dias, G. O.; Dacal, L. C. O.; de Lima, M. M., Jr.; Ruffo, C. V. R. S.; Iikawa, F.; Brasil, M. J. S. P.; Chiaramonte, T.; Cotta, M. A.; Tizei, L. H. G.; Ugarte, D.; Cantarero, A.

2010-09-01

We investigated experimentally and theoretically the valence-band structure of wurtzite InP nanowires. The wurtzite phase, which usually is not stable for III-V phosphide compounds, has been observed in InP nanowires. We present results on the electronic properties of these nanowires using the photoluminescence excitation technique. Spectra from an ensemble of nanowires show three clear absorption edges separated by 44 meV and 143 meV, respectively. The band edges are attributed to excitonic absorptions involving three distinct valence-bands labeled: A, B, and C. Theoretical results based on “ab initio” calculation gives corresponding valence-band energy separations of 50 meV and 200 meV, respectively, which are in good agreement with the experimental results.

New connecting elements for cascade photoelectric converters based on InP

Science.gov (United States)

Marichev, A. E.; Pushnyi, B. V.; Levin, R. V.; Lebedeva, N. M.; Prasolov, N. D.; Kontrosh, E. V.

2018-03-01

In this paper, we report on the initial studies of connecting elements for cascade photodetectors. The heterostructures used in this work are based on InP. As a connecting element, it is proposed to use nanocrystalline inclusions instead of the tunnel junction. GaP nanocrystals are most suitable for this purpose because this material does not cause absorption of the incident radiation.

Velocity auto-correlation and hot-electron diffusion constant in GaAs and InP

International Nuclear Information System (INIS)

Deb Roy, M.

1982-01-01

Auto-correlation functions of the fluctuations in the electron velocities transverse and parallel to the applied electric field are calculated by the Monte Carlo method for GaAs and InP at three different values of field strength which are around three times the threshold field for negative differential mobility in each case. From these the frequency-dependent diffusion coefficients transverse and parallel to the applied field and the figure of merit for noise performance when used in a microwave amplifying device are determined. The results indicate that the transverse auto-correlation function Csub(t)(s) falls nearly exponentially to zero with increasing interval s while the parallel function Csub(p)(s) falls sharply, attains a minimum and then rises towards zero. In each case a higher field gives a higher rate of fall and makes the correlation functions zero within a shorter interval. The transverses diffusion coefficient falls monotonically with the frequency but the parallel diffusion coefficient generally starts with a low value at low frequencies, rises to a maximum and then falls. InP, with a larger separation between the central and the satellite valleys, has a higher value of the low frequency transverse diffusion coefficient and a lower value of its parallel counterpart. The noise performance of microwave semiconductor amplifying devices depends mainly on the low frequency parallel diffusion constant and consequently devices made out of materials like InP with a large separation between valleys are likely to have better noise characteristics. (orig.)

Effekte von Xenohormonen auf die limnischen Invertebraten Gammarus fossarum (Crustacea, Amphipoda) und Marisa cornuarietis (Mollusca, Prosobranchia)

OpenAIRE

Schirling, Martin

2005-01-01

In dieser Arbeit werden Effekte von Xenohormonen auf Gammarus fossarum und Marisa cornuarietis anhand verschiedener Parameter, auf unterschiedlichen biologischen Ebenen dargestellt. In einem Laborexperiment mit G. fossarum, das Grundlage für weitere Untersuchungen im Rahmen dieser Arbeit war, konnte gezeigt werden, dass sich die Stressproteine hsp90 und hsp70 im Laufe der Oocytenreifung gegenläufig verhalten. Sowohl in einem Freilandversuch, bei dem der Einfluss von Kläranlageneinleitern ...

Molecular beam epitaxial growth and characterization of zinc-blende ZnMgSe on InP (001)

International Nuclear Information System (INIS)

Sohel, Mohammad; Munoz, Martin; Tamargo, Maria C.

2004-01-01

High crystalline quality zinc-blende structure Zn (1-x) Mg x Se epitaxial layers were grown on InP (001) substrates by molecular beam epitaxy. Their band gap energies were determined as a function of Mg concentration and a linear dependence was observed. The band gap of the Zn (1-x) Mg x Se closely lattice matched to InP was found to be 3.59 eV at 77 K and the extrapolated value for zinc-blende MgSe was determined to be 3.74 eV. Quantum wells of Zn (1-x) Cd x Se with Zn (1-x) Mg x Se as the barrier layer were grown which exhibit near ultraviolet emission

Electronic properties of GaAs, InAs and InP nanowires studied by terahertz spectroscopy

International Nuclear Information System (INIS)

Joyce, Hannah J; Docherty, Callum J; Lloyd-Hughes, James; Herz, Laura M; Johnston, Michael B; Gao Qiang; Tan, H Hoe; Jagadish, Chennupati

2013-01-01

We have performed a comparative study of ultrafast charge carrier dynamics in a range of III–V nanowires using optical pump–terahertz probe spectroscopy. This versatile technique allows measurement of important parameters for device applications, including carrier lifetimes, surface recombination velocities, carrier mobilities and donor doping levels. GaAs, InAs and InP nanowires of varying diameters were measured. For all samples, the electronic response was dominated by a pronounced surface plasmon mode. Of the three nanowire materials, InAs nanowires exhibited the highest electron mobilities of 6000 cm 2 V −1 s −1 , which highlights their potential for high mobility applications, such as field effect transistors. InP nanowires exhibited the longest carrier lifetimes and the lowest surface recombination velocity of 170 cm s −1 . This very low surface recombination velocity makes InP nanowires suitable for applications where carrier lifetime is crucial, such as in photovoltaics. In contrast, the carrier lifetimes in GaAs nanowires were extremely short, of the order of picoseconds, due to the high surface recombination velocity, which was measured as 5.4 × 10 5   cm s −1 . These findings will assist in the choice of nanowires for different applications, and identify the challenges in producing nanowires suitable for future electronic and optoelectronic devices. (paper)

INP studies for a Tau-Charm Factory

International Nuclear Information System (INIS)

Skrinsky, A.

1994-01-01

This paper presents the results of studies undertaken at INP of options for a Tau Charm Factory. Three different beam options have been studied. First is a 'round beam option', allowing axially symmetric beams which yield high tau-pair productivity. The second option involves monochromatic beams, which enhances productivity for narrow c bar c states, gives good tau pair productions in a clean manner, and has a good resonant-to-nonresonant ratio. The third option allows longitudinal polarization, should it prove to be interesting. It is an easy option to implement because it only involves polarized electrons. Work on some of these options is described in terms of experiments on the VEPP-2 device

InP based lasers and optical amplifiers with wire-/dot-like active regions

DEFF Research Database (Denmark)

Reithmaier, J. P.; Somers, A.; Deubert, S.

2005-01-01

Long wavelength lasers and semiconductor optical amplifiers based on InAs quantum wire/dot-like active regions were developed on InP substrates dedicated to cover the extended telecommunication wavelength range between 1.4 - 1.65 mm. In a brief overview different technological approaches will be ...

InP MMIC Chip Set for Power Sources Covering 80-170 GHz

Science.gov (United States)

Ngo, Catherine

2001-01-01

We will present a Monolithic Millimeter-wave Integrated Circuit (MMIC) chip set which provides high output-power sources for driving diode frequency multipliers into the terahertz range. The chip set was fabricated at HRL Laboratories using a 0.1-micrometer gate-length InAlAs/InGaAs/InP high electron mobility transistor (HEMT) process, and features transistors with an f(sub max) above 600 GHz. The HRL InP HEMT process has already demonstrated amplifiers in the 60-200 GHz range. In this paper, these high frequency HEMTs form the basis for power sources up to 170 GHz. A number of state-of-the-art InP HEMT MMICs will be presented. These include voltage-controlled and fixed-tuned oscillators, power amplifiers, and an active doubler. We will first discuss an 80 GHz voltage-controlled oscillator with 5 GHz of tunability and at least 17 mW of output power, as well as a 120 GHz oscillator providing 7 mW of output power. In addition, we will present results of a power amplifier which covers the full WRIO waveguide band (75-110 GHz), and provides 40-50 mW of output power. Furthermore, we will present an active doubler at 164 GHz providing 8% bandwidth, 3 mW of output power, and an unprecedented 2 dB of conversion loss for an InP HEMT MMIC at this frequency. Finally, we will demonstrate a power amplifier to cover 140-170 GHz with 15-25 mW of output power and 8 dB gain. These components can form a power source in the 155-165 GHz range by cascading the 80 GHz oscillator, W-band power amplifier, 164 GHz active doubler and final 140-170 GHz power amplifier for a stable, compact local oscillator subsystem, which could be used for atmospheric science or astrophysics radiometers.

Ab initio electronic band structure calculation of InP in the wurtzite phase

Science.gov (United States)

Dacal, Luis C. O.; Cantarero, Andrés

2011-05-01

We present ab initio calculations of the InP band structure in the wurtzite phase and compare it with that of the zincblende phase. In both calculations, we use the full potential linearized augmented plane wave method as implemented in the WIEN2k code and the modified Becke-Johnson exchange potential, which provides an improved value of the bandgap. The structural optimization of the wurtizte InP gives a=0.4150 nm, c=0.6912 nm, and an internal parameter u=0.371, showing the existence of a spontaneous polarization along the growth axis. As compared to the ideal wurtzite structure (that with the lattice parameter derived from the zincblende structure calculations), the actual wurtzite structure is compressed (-1.3%) in plane and expanded (0.7%) along the c-direction. The value of the calculated band gaps agrees well with recent optical experiments. The calculations are also consistent with the optical transitions found using polarized light.

EM simulation assisted parameter extraction for the modeling of transferred-substrate InP HBTs

DEFF Research Database (Denmark)

Johansen, Tom Keinicke; Weimann, Nils; Doerner, Ralf

2017-01-01

In this paper an electromagnetic (EM) simulation assisted parameters extraction procedure is demonstrated for accurate modeling of down-scaled transferred-substrate InP HBTs. The external parasitic network associated with via transitions and device electrodes is carefully extracted from calibrate...

Raman spectroscopy for characterization of annealing of ion-implanted InP

International Nuclear Information System (INIS)

Myers, D.R.; Gourley, P.L.; Vaidyanathan, K.V.; Dunlap, H.L.

1983-01-01

Raman spectroscopy has been used as a noncontacting, nondestructive tool to evaluate the properties of Si + - and Be + implanted InP samples annealed at temperatures ranging from 600 to 750C using phospho-silicate glass (PSG) as the encapsulant. Carrier activation, carrier mobility and recovery of damage as a function of anneal temperature obtained from analysis of Raman data agree very well with independent electrical measurements. (author)

Einfluss einer vierstündigen Hypoxieexposition (12,5% O 2) auf die Expression von hypoxie-und stressinduzierbaren Proteinen in Zusammenhang mit Antioxidantien

OpenAIRE

Höchst, Katrin

2009-01-01

Eine adäquate Sauerstoffversorgung des menschlichen Organismus ist eine essentielle Grundvoraussetzung für die Funktion aller Organe und Körpersysteme. In dieser Arbeit beschäftigen wir uns mit der Auswirkung von Hypoxie auf das Immunsystem, was auch im Sport in Bezug auf Höhentraining von Bedeutung ist. Wir untersuchten den Effekt moderater Hypoxie auf die Regulation von verschiedenen Stressantworten des Immunsystems (oxidativer Burst, Phagozytose, Expression der Hitzschockproteine HSP ...

Electronic band structure calculations for GaxIn1−xASyP1−y alloys lattice matched to InP

International Nuclear Information System (INIS)

Bechiri, A; Benmakhlouf, F; Allouache, H; Bacha, S; Bouarissa, N

2012-01-01

A pseudopotential formalism coupled with the virtual crystal approximation are applied to study the effect of compositional disorder upon electronic band structure of cubic Ga x In 1−x As y P 1−y quarternary alloys lattice matched to InP. The effects of compositional variations are properly included in the calculations. Very good agreement is obtained between the calculated values and the available experimental data for the lattice–matched alloy to InP. The absorption at the fundamental optical gaps is found to be direct within a whole range of the y composition whatever the lattice-matching to the substrate of interest. The alloy system Ga x In 1−x As y P 1−y lattice matched to InP is suggested to be suitable for an efficient light emitting device (ELED) material.

Role of electrode metallization in the performance of bulk semi-insulating InP radiation detectors

International Nuclear Information System (INIS)

Zatko, B.; Dubecky, F.; Prochazkova, O.; Necas, V.

2007-01-01

This work deals with the study of three different electrode metallizations with the aim to form a Schottky barrier contact. Electrode geometry corresponds to the requirements of digital radiography systems. As substrates bulk Liquid Encapsulated Czochralski (LEC) SI InP wafers doped with Fe and Fe+Zn are used. Results of this study show that no one of the used metallization performs as a blocking contact. However, detectors with Ti/Pt/Au metallization attained a relatively good energy resolution of 7.0 keV in full-width at half-maximum (FWHM) and the charge collection efficiency (CCE) higher than 83% for 122 keV γ-photons at 255 K. The development of SI InP radiation detectors and in particular their electrode technology is discussed in the light of observed results

Hopping conductivity via deep impurity states in InP

International Nuclear Information System (INIS)

Kuznetsov, V.P.; Messerer, M.A.; Omel'yanovskij, Eh.M.

1984-01-01

Hopping (epsilon 3 ) and Mott conductivities via deep impurity compounds with localization radius below 10 A have been studied using as an example Mn in InP. It is shown, that the existing theory of hopping conductivity in low-alloyed semiconductors with Na 3 << 1 can be Used for the case of deep centres as successfully as for the case of insignificant hydrogen-like impurities. Fundamental parameters of the theory: localization radius of wave function of deep impurities, state density near the Fermi level, mean hop length, are determined

Bottom-up substitution assembly of AuF4-n0,-+nPO3 (n = 1-4): a theoretical study of novel oxyfluoride hyperhalogen molecules and anions AuF4-n(PO3)n0,-

Science.gov (United States)

Yang, Yi-fan; Cui, Zhong-hua; Ding, Yi-hong

2014-06-01

Compounds with high electron affinity, i.e. superhalogens, have continued to attract chemists' attention, due to their potential importance in fundamental chemistry and materials science. It has now proven very effective to build up novel superhalogens with multi-positively charged centres, which are usually called 'hyperhalogens'. Herein, using AuF4- and PO3 as the model building blocks, we made the first attempt to design the Au,P-based hyperhalogen anions AuF4-n(PO3)n- (n = 1-4) at the B3LYP/6-311+G(d)&SDD and CCSD(T)/6-311+G(d)&SDD (single-point) levels (6-311+G(d) for O, F, P and SDD for Au). Notably, for all the considered Au,P systems, the ground state bears a dioxo-bonded structure with n ≤ 3, which is significantly more stable than the usually presumed mono-oxo-bonded one. Moreover, the clustering of the -PO3 moieties becomes energetically favoured for n ≥ 3. The ground states of AuP4O120,- are the first reported cage-like oxide hyperhalogens. Thus, the -PO3 moiety cannot be retained during the 'bottom-up' assembly. The vertical detachment energy (VDE) value of the most stable AuF4-n(PO3)n- (n = 1-4) ranges from 7.16 to 8.20 eV, higher than the VDE values of the corresponding building blocks AuF4- (7.08 eV) and PO3- (4.69 eV). The adiabatic detachment energy values of these four hyperhalogens exceed 6.00 eV. Possible generation routes for AuF4-n(PO3)n- (n = 1-4) were discussed. The presently designed oxyfluorides not only enriches the family of hyperhalogens, but also demonstrates the great importance of considering the structural transformation during the superhalogen → hyperhalogen design such as for the present Au-P based systems.

Optical properties of ion-implanted InP and GaAs: Selectivity-excited photoluminescence spectra

International Nuclear Information System (INIS)

Makita, Yunosuke; Yamada, Akimasa; Kimura, Shinji; Niki, Shigeru; Yoshinaga, Hiroshi; Matsumori, Tokue; Iida, Tsutomu; Uekusa, Ichiro

1993-01-01

Implantation of Mg+ ions was carried out into high purity InP grown by liquid encapsulated Czochralski method. Mg+ ion-implanted InP presented the formation of plural novel emissions with increasing Mg concentration, [Mg] in the low temperature photoluminescence spectra. Selectively-excited photoluminescence (SPL) measurements were made to examine the features of two-hole replicas pertinent to the emissions of excitons bound to neutral Mg and residual Zn acceptors. Systematic variation of the emission intensities from the two types of two-hole replicas was found to be utilized for the evaluation of ion-implanted materials. The significant discrepancy of emission spectra between PL and SPL was attributed to the difference of the depth examined by using the excitation light with high and low absorption coefficient. The results revealed that the diffusion of ion-implanted Mg is extremely enhanced when [Mg] exceeds 1x10 17 cm -3

Produktherkunft und Preis als Einflussfaktoren auf die Kaufentscheidung

OpenAIRE

Leitow, Detmar

2005-01-01

Vor dem Hintergrund gesättigter und informationsüberlasteter Märkte wird die Bedeutung der regionalen Herkunft von Lebensmitteln für das Konsumentenverhalten diskutiert. Obwohl diesem Produktattribut in wissenschaftlichen Befragungen eine marketingrelevante Bedeutung bescheinigt wird, spiegelt sich die geäußerte Präferenz und Mehrpreisbereitschaft aus Sicht des Einzelhandels häufig nicht im Kaufverhalten wider. Dies deutet auf eine Diskrepanz zwischen der Einstellung und dem Verhalten hin. Zi...

Understanding InP Nanowire Array Solar Cell Performance by Nanoprobe-Enabled Single Nanowire Measurements.

Science.gov (United States)

Otnes, Gaute; Barrigón, Enrique; Sundvall, Christian; Svensson, K Erik; Heurlin, Magnus; Siefer, Gerald; Samuelson, Lars; Åberg, Ingvar; Borgström, Magnus T

2018-05-09

III-V solar cells in the nanowire geometry might hold significant synthesis-cost and device-design advantages as compared to thin films and have shown impressive performance improvements in recent years. To continue this development there is a need for characterization techniques giving quick and reliable feedback for growth development. Further, characterization techniques which can improve understanding of the link between nanowire growth conditions, subsequent processing, and solar cell performance are desired. Here, we present the use of a nanoprobe system inside a scanning electron microscope to efficiently contact single nanowires and characterize them in terms of key parameters for solar cell performance. Specifically, we study single as-grown InP nanowires and use electron beam induced current characterization to understand the charge carrier collection properties, and dark current-voltage characteristics to understand the diode recombination characteristics. By correlating the single nanowire measurements to performance of fully processed nanowire array solar cells, we identify how the performance limiting parameters are related to growth and/or processing conditions. We use this understanding to achieve a more than 7-fold improvement in efficiency of our InP nanowire solar cells, grown from a different seed particle pattern than previously reported from our group. The best cell shows a certified efficiency of 15.0%; the highest reported value for a bottom-up synthesized InP nanowire solar cell. We believe the presented approach have significant potential to speed-up the development of nanowire solar cells, as well as other nanowire-based electronic/optoelectronic devices.

Einfluss von Thujonen und Omeprazol auf die Aktivität der glatten Muskelzelle im Ileum der Ratte

OpenAIRE

Huhnstock, Stefan

2010-01-01

Untersucht wurde der Einfluss von Thujonen (α Thujon, αβThujon, natürliches Mischthujon) und Omeprazol auf die Ruheaktivität, den Basaltonus, die pharmakologisch vorstimulierte glatte Muskulatur ,sowie die elektrisch induzierte Kontraktionen und die elektrisch induzierte Relaxation unter nicht-adrenergen nicht-cholinergen Bedingungen an der glatten Muskelzelle im Ileum von Ratten. Auf die Ruheaktivität und den Basaltonus hatten die Substanzen keinen Einfluss. Thujone hatten einen signifikante...

InP monolithically integrated label swapper device for spectral amplitude coded optical packet networks

NARCIS (Netherlands)

Muñoz, P.; García-Olcina, R.; Doménech, J.D.; Rius, M.; Sancho, J.C.; Capmany, J.; Chen, L.R.; Habib, C.; Leijtens, X.J.M.; Vries, de T.; Heck, M.J.R.; Augustin, L.M.; Nötzel, R.; Robbins, D.J.

2010-01-01

In this paper a label swapping device, for spectral amplitude coded optical packet networks, fully integrated using InP technology is presented. Compared to previous demonstrations using discrete component assembly, the device footprint is reduced by a factor of 105 and the operation speed is

Regrowth of InP by MOVPE on dry-etched heterostructures of InP-GaInAsP

Energy Technology Data Exchange (ETDEWEB)

Catana, A. (IBM Research Div., Zurich Research Lab., Rueschlikon (Switzerland)); Broom, R.F. (IBM Research Div., Zurich Research Lab., Rueschlikon (Switzerland)); Germann, R. (IBM Research Div., Zurich Research Lab., Rueschlikon (Switzerland)); Roentgen, P. (IBM Research Div., Zurich Research Lab., Rueschlikon (Switzerland))

1993-04-01

The MOVPE growth behavior of InP on masked and dry-etched ridges in InP/InGaAsP heterostructures grown on (001)-oriented InP substrates has been studied by scanning electron and transmission electron microscopy. It is found that the orientation of the ridges is critical for obtaining good planarization. For ridges oriented along the 100 direction, the growth is uniform and defect-free, leasing to a plane surface. In the orthogonal 110 direction 60 twins are nucleated adjacent to the walls of the ridge. The resultant high density of (111)/(001) facets enhances the growth rate in these regions, leading to projecting walls at the sides of the ridge. (orig.)

Submicron InP DHBT technology for high-speed high-swing mixed-signal ICs

DEFF Research Database (Denmark)

Godin, Jean; Nodjiadjim, V.; Riet, Muriel

2008-01-01

We report on the development of a submicron InP DHBT technology, optimized for the fabrication of 50-GHz-clock mixed signal ICs. In-depth study of device geometry and structure has allowed to get the needed performances and yield. Special attention has been paid to critical thermal behavior. Vari...... applications of interest....

Der Einfluss von personeller Einkommensverteilung auf die „Great Depression“ und die „Great Recession“

Directory of Open Access Journals (Sweden)

Stefan Trappl

2015-12-01

Full Text Available Der Einfluss gestiegener Einkommensungleichheit auf die „Great Depression“ und die „Great Recession“ wurde mehrfach postuliert (Galbraith 1954/2009; Eccles 1951; Rajan 2010; Stiglitz 2012; Piketty 2014. Konkrete empirische Arbeiten zum Zusammenhang zwischen Einkommensverteilung und dem Entstehen von Wirtschaftskrisen gibt es aber bislang wenige. Kumhof/Ranciere (2010 überprüften die von Rajan (2010 aufgestellte Hypothese, die einen entsprechenden Zusammenhang postuliert, mittels Modellrechnung. Bordo/Meissner (2012 und darauf aufbauend Gu/Huang (2014 verwendeten unterschiedliche Regressionsmodelle in Bezug auf einen entsprechenden Zusammenhang, ohne jedoch eindeutige Ergebnisse zu liefern. Die vorliegende Arbeit schließt an diese Arbeiten an, beschränkt die Untersuchung allerdings auf Staaten, für die Daten für die letzten hundert Jahre verfügbar sind, und untersucht zudem explizit die Zeiträume um die beiden größten Krisen der letzten hundert Jahre, die „Great Depression“ und die „Great Recession“. Die Auswertungen zeigen, dass die personelle Einkommensverteilung ein guter Prädiktor für die Kriseneintrittswahrscheinlichkeit ist.

Molecular beam epitaxy of InP single junction and InP/In0.53Ga0.47As monolithically integrated tandem solar cells using solid phosphorous source material

International Nuclear Information System (INIS)

Delaney, A.; Chin, K.; Street, S.; Newman, F.; Aguilar, L.; Ignatiev, A.; Monier, C.; Velela, M.; Freundlich, A.

1998-01-01

This work reports the first InP solar cells, InP/In 0.53 Ga 0.47 As tandem solar cells and InP tunnel junctions to be grown using a solid phosphorous source cracker cell in a molecular beam epitaxy system. High p-type doping achieved with this system allowed for the development of InP tunnel junctions. These junctions which allow for improved current matching in subsequent monolithically integrated tandem devices also do not absorb photons which can be utilized in the InGaAs structure. Photocurrent spectral responses compared favorably to devices previously grown in a chemical beam epitaxy system. High resolution x-ray scans demonstrated good lattice matching between constituent parts of the tandem cell. AM0 efficiencies of both InP and InP/InGaAs tandem cells are reported

Optimized efficiency in InP nanowire solar cells with accurate 1D analysis

Science.gov (United States)

Chen, Yang; Kivisaari, Pyry; Pistol, Mats-Erik; Anttu, Nicklas

2018-01-01

Semiconductor nanowire arrays are a promising candidate for next generation solar cells due to enhanced absorption and reduced material consumption. However, to optimize their performance, time consuming three-dimensional (3D) opto-electronics modeling is usually performed. Here, we develop an accurate one-dimensional (1D) modeling method for the analysis. The 1D modeling is about 400 times faster than 3D modeling and allows direct application of concepts from planar pn-junctions on the analysis of nanowire solar cells. We show that the superposition principle can break down in InP nanowires due to strong surface recombination in the depletion region, giving rise to an IV-behavior similar to that with low shunt resistance. Importantly, we find that the open-circuit voltage of nanowire solar cells is typically limited by contact leakage. Therefore, to increase the efficiency, we have investigated the effect of high-bandgap GaP carrier-selective contact segments at the top and bottom of the InP nanowire and we find that GaP contact segments improve the solar cell efficiency. Next, we discuss the merit of p-i-n and p-n junction concepts in nanowire solar cells. With GaP carrier selective top and bottom contact segments in the InP nanowire array, we find that a p-n junction design is superior to a p-i-n junction design. We predict a best efficiency of 25% for a surface recombination velocity of 4500 cm s-1, corresponding to a non-radiative lifetime of 1 ns in p-n junction cells. The developed 1D model can be used for general modeling of axial p-n and p-i-n junctions in semiconductor nanowires. This includes also LED applications and we expect faster progress in device modeling using our method.

Dopant-free twinning superlattice formation in InSb and InP nanowires

Energy Technology Data Exchange (ETDEWEB)

Yuan, Xiaoming [School of Physics and Electronics, Hunan Key Laboratory for Supermicrostructure and Ultrafast Process, Central South University, Changsha, Hunan (China); Department of Electronic Materials Engineering, Research School of Physics and Engineering, The Australian National University, Canberra, ACT (Australia); Guo, Yanan; Caroff, Philippe; Tan, Hark Hoe; Jagadish, Chennupati [Department of Electronic Materials Engineering, Research School of Physics and Engineering, The Australian National University, Canberra, ACT (Australia); He, Jun [School of Physics and Electronics, Hunan Key Laboratory for Supermicrostructure and Ultrafast Process, Central South University, Changsha, Hunan (China)

2017-11-15

Periodic arrangement of twin planes creates a controllable polytype that can affect both the electronic and optical properties of nanowires. The approach that is most used for inducing twinning superlattice (TSL) formation in III-V nanowires is introducing impurity dopants during growth. Here, we demonstrate that controlling the growth parameters is sufficient to produce regular twinning planes in Au-catalysed InSb and InP nanowires. Our results show that TSL formation in InSb nanowires only exists in a very narrow growth window. We suggest that growth conditions induce a high concentration of In (or Sb) in the Au droplet, which plays a similar role to that of surfactant impurities such as Zn, and increases the droplet wetting angle to yield a geometry that is favorable for TSL formation. The demonstration of TSL structure in InSb and InP nanowires by controlling the input of In (or Sb) further enhances fundamental understanding of TSL formation in III-V nanowires and allows us to tune the properties of these nanowires by crystal phase engineering. (copyright 2017 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

High-efficiency red electroluminescent device based on multishelled InP quantum dots.

Science.gov (United States)

Jo, Jung-Ho; Kim, Jong-Hoon; Lee, Ki-Heon; Han, Chang-Yeol; Jang, Eun-Pyo; Do, Young Rag; Yang, Heesun

2016-09-01

We report on the synthesis of highly fluorescent red-emitting InP quantum dots (QDs) and their application to the fabrication of a high-efficiency QD-light-emitting diode (QLED). The core/shell heterostructure of the QDs is elaborately tailored toward a multishelled structure with a composition-gradient ZnSeS intermediate shell and an outer ZnS shell. Using the resulting InP/ZnSeS/ZnS QDs as an emitting layer, all-solution-processible red InP QLEDs are fabricated with a hybrid multilayered device structure having an organic hole transport layer (HTL) and an inorganic ZnO nanoparticle electron transport layer. Two HTLs of poly(9-vinlycarbazole) or poly[(9,9-dioctylfluorenyl-2,7-diyl)-co-(4,4'-(N-(4-sec-butylphenyl))diphenyl-amine), whose hole mobilities are different by at least three orders of magnitude, are individually applied for QLED fabrication and such HTL-dependent device performances are compared. Our best red device displays exceptional figures of merit such as a maximum luminance of 2849  cd/m2, a current efficiency of 4.2  cd/A, and an external quantum efficiency of 2.5%.

Dopant-free twinning superlattice formation in InSb and InP nanowires

International Nuclear Information System (INIS)

Yuan, Xiaoming; Guo, Yanan; Caroff, Philippe; Tan, Hark Hoe; Jagadish, Chennupati; He, Jun

2017-01-01

Periodic arrangement of twin planes creates a controllable polytype that can affect both the electronic and optical properties of nanowires. The approach that is most used for inducing twinning superlattice (TSL) formation in III-V nanowires is introducing impurity dopants during growth. Here, we demonstrate that controlling the growth parameters is sufficient to produce regular twinning planes in Au-catalysed InSb and InP nanowires. Our results show that TSL formation in InSb nanowires only exists in a very narrow growth window. We suggest that growth conditions induce a high concentration of In (or Sb) in the Au droplet, which plays a similar role to that of surfactant impurities such as Zn, and increases the droplet wetting angle to yield a geometry that is favorable for TSL formation. The demonstration of TSL structure in InSb and InP nanowires by controlling the input of In (or Sb) further enhances fundamental understanding of TSL formation in III-V nanowires and allows us to tune the properties of these nanowires by crystal phase engineering. (copyright 2017 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

Effects of Au/Fe and Fe nanoparticles on Serratia bacterial growth and production of biosurfactant

International Nuclear Information System (INIS)

Liu, Jia; Vipulanandan, Cumaraswamy

2013-01-01

The overall objective of this study was to compare the effects of Au/Fe and Fe nanoparticles on the growth and performance of Serratia Jl0300. The nanoparticle effect was quantified not only by the bacterial growth on agar plate after 1 hour interaction with the nanoparticles, but also by its production of a biosurfactant from used vegetable oil. The nanoparticles were prepared using the foam method. The concentrations of the nanoparticles used for the bacterial interaction study were varied from 1 mg/L to 1 g/L. The test results showed that the effect of nanoparticles on the bacterial growth and biosurfactant production varied with nanoparticle type, concentrations, and interaction time with the bacteria. Au/Fe nanoparticles didn't show toxicity to Serratia after short time (1 h) exposure, while during 8 days fermentation Au/Fe nanoparticles inhibited the growth of Serratia as well as the biosurfactant production when the concentration of the nanoparticles was higher than 10 mg/L. Fe nanoparticles showed inhibition effects to bacterial growth both after short time and long time interaction with Serratia, as well as to biosurfactant production when its concentration was higher than 100 mg/L. Based on the trends observed in this study, analytical models have been developed to predict the bacterial growth and biosurfactant production with varying concentrations of nanoparticles. - Highlights: • Modeled the effect of nanoparticles on the bacterial growth and biosurfactant production. • Effects of Au/Fe nonoparticles on Serratia Bacterial Growth and Production of Biosurfactant. • Scanning Electron Micrograph of bacteria-nanoparticles interaction

Effects of Au/Fe and Fe nanoparticles on Serratia bacterial growth and production of biosurfactant

Energy Technology Data Exchange (ETDEWEB)

Liu, Jia; Vipulanandan, Cumaraswamy, E-mail: cvipulanandan@uh.edu

2013-10-15

The overall objective of this study was to compare the effects of Au/Fe and Fe nanoparticles on the growth and performance of Serratia Jl0300. The nanoparticle effect was quantified not only by the bacterial growth on agar plate after 1 hour interaction with the nanoparticles, but also by its production of a biosurfactant from used vegetable oil. The nanoparticles were prepared using the foam method. The concentrations of the nanoparticles used for the bacterial interaction study were varied from 1 mg/L to 1 g/L. The test results showed that the effect of nanoparticles on the bacterial growth and biosurfactant production varied with nanoparticle type, concentrations, and interaction time with the bacteria. Au/Fe nanoparticles didn't show toxicity to Serratia after short time (1 h) exposure, while during 8 days fermentation Au/Fe nanoparticles inhibited the growth of Serratia as well as the biosurfactant production when the concentration of the nanoparticles was higher than 10 mg/L. Fe nanoparticles showed inhibition effects to bacterial growth both after short time and long time interaction with Serratia, as well as to biosurfactant production when its concentration was higher than 100 mg/L. Based on the trends observed in this study, analytical models have been developed to predict the bacterial growth and biosurfactant production with varying concentrations of nanoparticles. - Highlights: • Modeled the effect of nanoparticles on the bacterial growth and biosurfactant production. • Effects of Au/Fe nonoparticles on Serratia Bacterial Growth and Production of Biosurfactant. • Scanning Electron Micrograph of bacteria-nanoparticles interaction.

Balanced G-band Gm-boosted frequency doublers in transferred substrate InP HBT technology

DEFF Research Database (Denmark)

Johansen, Tom Keinicke; Thualfiqar, Al-Sawaf; Weimann, Nils

2016-01-01

In this paper, balanced G-band Gm-boosted frequency doublers in transferred substrate (TS) InP HBT technology are reported for the first time. The Gm-boosted frequency doublers consist of a phase compensated Marchand balun, Gm-boosted doubler stage, and an optional cascode gain stage at the outpu...

W-Band InP Wideband MMIC LNA with 30K Noise Temperature

Science.gov (United States)

Weinreb, S.; Lai, R.; Erickson, N.; Gaier, T.; Wielgus, J.

2000-01-01

This paper describe a millimeter wave low noise amplifier with extraordinary low noise, low consumption, and wide frequency range. These results are achieved utilizing state-of-the-art InP HEMT transistors coupled with CPW circuit design. The paper describes the transistor models, modeled and measured on-wafer and in-module results at both 300K am 24K operating temperatures for many samples of the device.

Three-Stage InP Submillimeter-Wave MMIC Amplifier

Science.gov (United States)

Pukala, David; Samoska, Lorene; Man, King; Gaier, Todd; Deal, William; Lai, Richard; Mei, Gerry; Makishi, Stella

2008-01-01

A submillimeter-wave monolithic integrated- circuit (S-MMIC) amplifier has been designed and fabricated using an indium phosphide (InP) 35-nm gate-length high electron mobility transistor (HEMT) device, developed at Northrop Grumman Corporation. The HEMT device employs two fingers each 15 micrometers wide. The HEMT wafers are grown by molecular beam epitaxy (MBE) and make use of a pseudomorphic In0.75Ga0.25As channel, a silicon delta-doping layer as the electron supply, an In0.52Al0.48As buffer layer, and an InP substrate. The three-stage design uses coplanar waveguide topology with a very narrow ground-to-ground spacing of 14 micrometers. Quarter-wave matching transmission lines, on-chip metal-insulator-metal shunt capacitors, series thin-film resistors, and matching stubs were used in the design. Series resistors in the shunt branch arm provide the basic circuit stabilization. The S-MMIC amplifier was measured for S-parameters and found to be centered at 320 GHz with 13-15-dB gain from 300-345 GHz. This chip was developed as part of the DARPA Submillimeter Wave Imaging Focal Plane Technology (SWIFT) program (see figure). Submillimeter-wave amplifiers could enable more sensitive receivers for earth science, planetary remote sensing, and astrophysics telescopes, particularly in radio astronomy, both from the ground and in space. A small atmospheric window at 340 GHz exists and could enable ground-based observations. However, the submillimeter-wave regime (above 300 GHz) is best used for space telescopes as Earth s atmosphere attenuates most of the signal through water and oxygen absorption. Future radio telescopes could make use of S-MMIC amplifiers for wideband, low noise, instantaneous frequency coverage, particularly in the case of heterodyne array receivers.

Growth and anisotropic transport properties of self-assembled InAs nanostructures in InP

International Nuclear Information System (INIS)

Bierwagen, O.

2007-01-01

Self-assembled InAs nanostructures in InP, comprising quantum wells, quantum wires, and quantum dots, are studied in terms of their formation and properties. In particular, the structural, optical, and anisotropic transport properties of the nanostructures are investigated. The focus is a comprehending exploration of the anisotropic in-plane transport in large ensembles of laterally coupled InAs nanostructures. The self-assembled Stranski-Krastanov growth of InAs nanostructures is studied by gas-source molecular beam epitaxy on both nominally oriented and vicinal InP(001). Optical polarization of the interband transitions arising from the nanostructure type is demonstrated by photoluminescence and transmission spectroscopy. The experimentally convenient four-contact van der Pauw Hall measurement of rectangularly shaped semiconductors, usually applied to isotropic systems, is extended to yield the anisotropic transport properties. Temperature dependent transport measurements are performed in large ensembles of laterally closely spaced nanostructures. The transport of quantum wire-, quantum dash- and quantum dot containing samples is highly anisotropic with the principal axes of conductivity aligned to the directions. The direction of higher mobility is [ anti 110], which is parallel to the direction of the quantum wires. In extreme cases, the anisotropies exceed 30 for electrons, and 100 for holes. The extreme anisotropy for holes is due to diffusive transport through extended states in the [ anti 110], and hopping transport through laterally localized states in the [110] direction, within the same sample. A novel 5-terminal electronic switching device based on gate-controlled transport anisotropy is proposed. The gate-control of the transport anisotropy in modulation-doped, self-organized InAs quantum wires embedded in InP is demonstrated. (orig.)

Growth and anisotropic transport properties of self-assembled InAs nanostructures in InP

Energy Technology Data Exchange (ETDEWEB)

Bierwagen, O.

2007-12-20

Self-assembled InAs nanostructures in InP, comprising quantum wells, quantum wires, and quantum dots, are studied in terms of their formation and properties. In particular, the structural, optical, and anisotropic transport properties of the nanostructures are investigated. The focus is a comprehending exploration of the anisotropic in-plane transport in large ensembles of laterally coupled InAs nanostructures. The self-assembled Stranski-Krastanov growth of InAs nanostructures is studied by gas-source molecular beam epitaxy on both nominally oriented and vicinal InP(001). Optical polarization of the interband transitions arising from the nanostructure type is demonstrated by photoluminescence and transmission spectroscopy. The experimentally convenient four-contact van der Pauw Hall measurement of rectangularly shaped semiconductors, usually applied to isotropic systems, is extended to yield the anisotropic transport properties. Temperature dependent transport measurements are performed in large ensembles of laterally closely spaced nanostructures. The transport of quantum wire-, quantum dash- and quantum dot containing samples is highly anisotropic with the principal axes of conductivity aligned to the <110> directions. The direction of higher mobility is [ anti 110], which is parallel to the direction of the quantum wires. In extreme cases, the anisotropies exceed 30 for electrons, and 100 for holes. The extreme anisotropy for holes is due to diffusive transport through extended states in the [ anti 110], and hopping transport through laterally localized states in the [110] direction, within the same sample. A novel 5-terminal electronic switching device based on gate-controlled transport anisotropy is proposed. The gate-control of the transport anisotropy in modulation-doped, self-organized InAs quantum wires embedded in InP is demonstrated. (orig.)

Biological constraints limit the use of rapamycin-inducible FKBP12-Inp54p for depleting PIP2 in dorsal root ganglia neurons.

Science.gov (United States)

Coutinho-Budd, Jaeda C; Snider, Samuel B; Fitzpatrick, Brendan J; Rittiner, Joseph E; Zylka, Mark J

2013-09-08

Rapamycin-induced translocation systems can be used to manipulate biological processes with precise temporal control. These systems are based on rapamycin-induced dimerization of FK506 Binding Protein 12 (FKBP12) with the FKBP Rapamycin Binding (FRB) domain of mammalian target of rapamycin (mTOR). Here, we sought to adapt a rapamycin-inducible phosphatidylinositol 4,5-bisphosphate (PIP2)-specific phosphatase (Inp54p) system to deplete PIP2 in nociceptive dorsal root ganglia (DRG) neurons. We genetically targeted membrane-tethered CFP-FRBPLF (a destabilized FRB mutant) to the ubiquitously expressed Rosa26 locus, generating a Rosa26-FRBPLF knockin mouse. In a second knockin mouse line, we targeted Venus-FKBP12-Inp54p to the Calcitonin gene-related peptide-alpha (CGRPα) locus. We hypothesized that after intercrossing these mice, rapamycin treatment would induce translocation of Venus-FKBP12-Inp54p to the plasma membrane in CGRP+ DRG neurons. In control experiments with cell lines, rapamycin induced translocation of Venus-FKBP12-Inp54p to the plasma membrane, and subsequent depletion of PIP2, as measured with a PIP2 biosensor. However, rapamycin did not induce translocation of Venus-FKBP12-Inp54p to the plasma membrane in FRBPLF-expressing DRG neurons (in vitro or in vivo). Moreover, rapamycin treatment did not alter PIP2-dependent thermosensation in vivo. Instead, rapamycin treatment stabilized FRBPLF in cultured DRG neurons, suggesting that rapamycin promoted dimerization of FRBPLF with endogenous FKBP12. Taken together, our data indicate that these knockin mice cannot be used to inducibly deplete PIP2 in DRG neurons. Moreover, our data suggest that high levels of endogenous FKBP12 could compete for binding to FRBPLF, hence limiting the use of rapamycin-inducible systems to cells with low levels of endogenous FKBP12.

Fabrication and characterization of InP fresnel microlenses

International Nuclear Information System (INIS)

Diadiuk, V.; Walpole, J.N.; Liau, Z.L.

1987-01-01

Since diode lasers typically have a beam divergence of a few tens of degrees, collimating the laser outputs leads to greatly far-field patterns, which, in turn translates into more power in the main lobe of the combined output. Achieving this collimation in the case of a diode laser array, with its small device-to-device distance, requires an array of similarly spaced microlenses with very short focal length, small diameter and small F number. In this paper, the authors describe the fabrication and performance of a Fresnel microlens array etched directly in InP wafers; these microlenses have been used successfully to collimate the output of GainAsP/InP buried-heterostructure (BH) diode lasers

Von kleinen Stupsern und großen Schubsern – Politik und Ethik des Libertären Paternalismus auf dem Prüfstand

Directory of Open Access Journals (Sweden)

Drerup Johannes

2016-07-01

Full Text Available Das von Cass Sunstein und Richard Thaler ausgearbeitete Projekt eines Libertären Paternalismus stellt fraglos einen der zurzeit meistdiskutierten neopaternalistischen Theorieentwürfe dar. Als hybride Mischung zwischen Theorieprogramm, politischer Bewegung und praxis- und anwendungsorientiertem Policy-Manual, das zuweilen Züge eines populären philosophischen Lebensratgebers trägt, hat Libertärer Paternalismus viel Zuspruch, aber auch heftige Kritik auf sich gezogen, die in diesem Aufsatz auf ihre Plausibilität geprüft werden. Zu diesem Zweck geben die Autoren zunächst einen kurzen Überblick über Ausgangspunkte, Leitorientierungen und Problemvorgaben des Theorie- und Politikprogramms des Libertären Paternalismus. In einem zweiten Schritt werden zentrale (metaphorische Konzepte und Unterscheidungen des libertär paternalistischen Rationales vorgestellt und problematisiert. Daran anschließend werden drei der prominentesten Kritikpunkte an Libertärem Paternalismus auf den Prüfstand gestellt. Hierzu gehören der Manipulationseinwand, Kritiken, die sich auf grundlegende Rechtfertigungsprobleme des Libertären Paternalismus beziehen, und Einwände, die auf langfristige negative Folgen des Nudging verweisen („Slippery-Slope-Argumente“.

Optical properties of InxGa1-xP/InP grown at high fluence Ga+ implantation on InP using focused ion beam

International Nuclear Information System (INIS)

Fang, Hsin-Chiao; Liu, Chuan-Pu; Dhara, Sandip

2011-01-01

Single-crystalline InP(1 0 0) substrate was implanted by 30 keV Ga + ions with fluences of 1 x 10 16 -1.5 x 10 17 cm -2 followed by post-annealing treatment at 750 o C to recover implantation-induced structural defects and activate dopants into the lattices. The optical property, composition, and microstructure of the Ga + -implanted InP were studied by Raman spectroscopy and transmission electron microscopy (TEM). Raman spectra show that the In x Ga 1-x P phase is formed at a critical fluence of 7 x 10 16 cm -2 . The newly grown phase was identified with the appearance of Ga rich TO InP and In rich TO GaP modes of a random alloy in the 1 bond-2 phonon mode configuration along with TEM structural identification.

Passive InP regenerator integrated on SOI for the support of broadband silicon modulators

NARCIS (Netherlands)

Tassaert, M.; Dorren, H.J.S.; Roelkens, G.; Raz, O.

2012-01-01

Passive signal regeneration based on the Membrane InP Switch (MIPS) is demonstrated. Because of the high confinement of light in the active region of the MIPS, the device acts as a saturable absorber with a highly non-linear response. Using this effect, the extinction ratio (ER) of low-ER signals

Application of MSM InP detectors to the measurement of pulsed X-ray radiation

Czech Academy of Sciences Publication Activity Database

Ryc, L.; Dobrzanski, L.; Dubecký, L.; Kaczmarczyk, J.; Pfeifer, Miroslav; Riesz, F.; Slysz, W.; Surma, B.

2008-01-01

Roč. 163, 4-6 (2008), 559-567 ISSN 1042-0150 R&D Projects: GA MŠk(CZ) LC528 Institutional research plan: CEZ:AV0Z10100523 Keywords : InP detector * X-ray detector * picosecond detector * laser plasma Subject RIV: BH - Optics, Masers, Lasers Impact factor: 0.415, year: 2008

High quality InAsSb grown on InP substrates using AlSb/AlAsSb buffer layers

International Nuclear Information System (INIS)

Wu, B.-R.; Liao, C.; Cheng, K. Y.

2008-01-01

High quality InAsSb grown on semi-insulating InP substrates by molecular beam epitaxy was achieved using AlSb/AlAsSb structure as the buffer layer. A 1000 A InAsSb layer grown on top of 1 μm AlSb/AlAsSb buffer layer showed a room temperature electron mobility of ∼12 000 cm 2 /V s. High structural quality and low misfit defect density were also demonstrated in the InAsSb layer. This novel AlSb/AlAsSb buffer layer structure with the AlAsSb layer lattice matched to InP substrates could enhance the performance of optoelectronic devices utilizing 6.1 A family of compound semiconductor alloys

CargoMover - the driverless 'truck on rails'; CargoMover - der fahrerlose 'Lkw auf Schienen'

Energy Technology Data Exchange (ETDEWEB)

Mairhofer, F. [Siemens AG, Erlangen (Germany). Transportation Systems, Cargo Logistics; Janssen, G. [DB Netz AG, NL West, Duisburg (Germany)

2003-07-01

Year after year, more and more freight is transported in Europe. Most of it is transported by road, because users currently see the truck as the fastest, most flexible and most economic solution. But road haulage is already leading to a lot of congestion, so that is it becoming more and more important to shift traffic onto the railways. The high-availability CargoMover {sup registered} system complements existing rail freight transport services. It combines the strategic advantages of truck and rail transport and offers flexible driverless rail freight transport to individual destinations - including at regional and local level, and for short-term requirements or small loads. (orig.) [German] Jahr fuer Jahr werden in Europa mehr Gueter bewegt. Der Grossteil dieser Transporte erfolgt auf der Strasse, weil der LKW von vielen Nutzern momentan als die schnellste, flexibelste und wirtschaftlichste Loesung angesehen wird. Schon heute fuehrt der Lkw-Verkehr aber zu vielen Staus, so dass es immer wichtiger wird, mehr Transportvolumen auf die Schiene zu bringen. Der CargoMover {sup registered} komplettiert als hochverfuegbares System das Gueterverkehrsangebot auf der Schiene. Er verbindet die strategischen Vorteile des Lkw mit denen des Bahnsystems und ermoeglicht fahrerlosen, zielreinen und flexiblen Gueterverkehr auf der Schiene - auch im Regional- und Nahverkehr, bei kurzfristigem Bedarf oder kleineren Losgroessen. (orig.)

Monte Carlo investigation of minority electron transport in InP

International Nuclear Information System (INIS)

Osman, M.A.; Grubin, H.L.

1989-01-01

This paper discusses the investigation of the transport of minority electrons in p-type InP for acceptor doping level of 10 18 cm 3 using Monte Carlo procedures. It is found that the velocity of minority electrons are significantly lower than that of majority electrons for fields below 15 kV/cm and slightly higher at higher fields. The study shows that the interaction between the electrons and majority holes leads to reducing the mobility of electrons from 2000 cm 2 /Vs to 1500 cm 2 /Vs

Wavelength tuning of InAs quantum dots grown on InP (100) by chemical-beam epitaxy

International Nuclear Information System (INIS)

Gong, Q.; Noetzel, R.; Veldhoven, P.J. van; Eijkemans, T.J.; Wolter, J.H.

2004-01-01

We report on an effective way to continuously tune the emission wavelength of InAs quantum dots (QDs) grown on InP (100) by chemical-beam epitaxy. The InAs QD layer is embedded in a GaInAsP layer lattice matched to InP. With an ultrathin GaAs layer inserted between the InAs QD layer and the GaInAsP buffer, the peak wavelength from the InAs QDs can be continuously tuned from above 1.6 μm down to 1.5 μm at room temperature. The major role of the thin GaAs layer is to greatly suppress the As/P exchange during the deposition of InAs and subsequent growth interruption under arsenic flux, as well as to consume the segregated surface In layer floating on the GaInAsP buffer layer

Changes of surface electron states of InP under soft X-rays irradiation

International Nuclear Information System (INIS)

Yang Zhian; Yang Zushen; Jin Tao; Qui Rexi; Cui Mingqi; Liu Fengqin

1999-01-01

Changes of surface electronic states of InP under 1 keV X-ray irradiation is studied by X-ray photoelectron spectroscopy (XPS) and ultraviolet ray energy spectroscopy (UPS). The results show that the soft X-ray irradiation has little effect on In atoms but much on P atoms. The authors analysed the mechanism of irradiation and explained the major effect

Zur Wirkung hoher Temperaturen auf vorratsschädliche Insekten

OpenAIRE

Adler, Cornel

2008-01-01

Vorratsschädliche Insekten sind Spezialisten, die in der Lage sind, trockene pflanzliche Materialien aufzuspüren, zu besiedeln und damit über die Befeuchtung durch Respiration dem Abbau durch weitere Organismen (Pilze, Milben, Bakterien) zuzuführen. Auf diese Weise sind sie die Auslöser eines Kompostierungsprozesses. Durch ihr hervorragendes Orientierungsvermögen entlang eines Duftstoffgradienten finden sie sich regelmäßig in Vorratslagern und Gebäuden der Lebens- und Futtermittelverarbeitung...

Comparative study of porosification in InAs, InP, ZnSe and ZnCdS

International Nuclear Information System (INIS)

Monaico, Eduard; Tiginyanu, Ion; Nielsch, Kornelius; Ursaki, Veaceslav; Colibaba, Gleb; Nedeoglo, Dmitrii; Cojocaru, Ala; Foell Helmut

2013-01-01

We report on a comparative study of the pore growth during anodization of a narrow-bandgap III-V compound (InAs), a medium-bandgap III-V one (InP) and wide-bandgap II-VI semiconductors (ZnSe and Zn 0,4 Cd 0,6 S). According to the obtained results, the morphology of the porous layers can be controlled by the composition of the electrolyte and the applied electrochemical parameters. It was evidenced that in the narrow bandgap semiconductor InAs it is difficult to control the mechanism of pore growth. Both current line oriented pores and crystallographically oriented pores were produced in the medium-bandgap material InP. The electrochemical nanostructuring of wide-bandgap semiconductors realized in single crystalline high conductivity samples evidenced only current-line oriented pores. This behavior is explained in terms of difference in the values of electronegativity of the constituent atoms and the degree of ionicity. (authors)

Sulfur as a surface passivation for InP

Science.gov (United States)

Iyer, R.; Chang, R. R.; Lile, D. L.

1988-01-01

The use of liquid and gas phase sulfur pretreatment of the surface of InP as a way to form a near-ideal passivated surface prior to chemical vapor deposition of SiO2 was investigated. Results of high-frequency and quasi-static capacitance-voltage measurements, as well as enhancement mode insulated gate field-effect transistor (FET) transductance and drain current stability studies, all support the efficacy of this approach for metal-insulator-semiconductor application of this semiconductor. In particular, surface state values in the range of 10 to the 10th to a few 10 to the 11th/sq cm per eV and enhancement mode FET drain current drifts of less than 5 percent over a 12 h test period were measured.

A high conversion-gain Q-band InP DHBT subharmonic mixer using LO frequency doubler

DEFF Research Database (Denmark)

Johansen, Tom Keinicke; Vidkjær, Jens; Krozer, Viktor

2008-01-01

The paper presents analysis and design of a Q-band subharmonic mixer (SHM) with high conversion gain. The SHM consists of a local oscillator (LO) frequency doubler, RF pre-amplifier, and single-ended mixer. The SHM has been fabricated in a high-speed InP double heterojunction bipolar transistor (...

Nährwertkennzeichnung und ihr Einfluss auf das Verbraucherverhalten

DEFF Research Database (Denmark)

Grunert, Klaus G.; Storcksdieck, Stefan

2009-01-01

Nährwertkennzeichnung soll zu einem gesünderen Ernährungsverhalten der Verbraucher beitragen. Um dieses Ziel erreichen zu können, ist es notwendig, dass solche Informationen von den Verbrauchern wahrgenommen, verstanden und in ihren Kaufentscheidungen auch tatsächlich angewendet werden, und dass......, die an prominenter Stelle auf der Vorderseite der Verpackung angebracht werden. Neuere Forschung zeigt, dass die meisten Verbraucher in der Lage sind, solche Informationen korrekt zu verarbeiten, dass aber nur eine Minderheit der Verbraucher dies im Geschäft auch tut. Die entscheidende Frage der...

Der Einfluss von sozialer Ungleichheit und kulturellen Unterschieden auf die Wahrnehmung von finanziellen und Arbeitsplatzrisiken: Überlegungen zur Risikogesellschaft

OpenAIRE

Abbott, David; Quilgars, Deborah; Jones, Anwen

2006-01-01

Der vorliegende Artikel beruht auf Daten einer Studie, die sich mit der Frage beschäftigt, wie verschiedene soziale und kulturelle Gruppen die Risiken von Einkommens- und Arbeitsplatzverlust wahrnehmen und darauf reagieren. Autoren wie LASH, DOUGLAS und LUPTON betonten die Bedeutung von Gruppenzugehörigkeit und sozialen Kategorien für die Strukturierung der Reaktionsweisen auf verschiedene Risikoarten. Sie sprechen daher lieber von Risikokulturen als von der Risikogesellschaft. Trotzdem erken...

Electron capture cross-section of Au-Fe complex in silicon

International Nuclear Information System (INIS)

Ali, Akbar; Shafi, M; Majid, Abdul

2006-01-01

A deep level transient spectroscopy technique is applied to study the capture cross-section of an iron-gold complex. The thermal ionization energy obtained from emission rate data is found to be E c -0.36 eV. The Au-Fe complex is a single defect having a capture cross-section of 2.48x10 -16 cm 2 for electrons which is independent of temperature

Thin-Film Solar Cells with InP Absorber Layers Directly Grown on Nonepitaxial Metal Substrates

KAUST Repository

Zheng, Maxwell

2015-08-25

The design and performance of solar cells based on InP grown by the nonepitaxial thin-film vapor-liquid-solid (TF-VLS) growth technique is investigated. The cell structure consists of a Mo back contact, p-InP absorber layer, n-TiO2 electron selective contact, and indium tin oxide transparent top electrode. An ex situ p-doping process for TF-VLS grown InP is introduced. Properties of the cells such as optoelectronic uniformity and electrical behavior of grain boundaries are examined. The power conversion efficiency of first generation cells reaches 12.1% under simulated 1 sun illumination with open-circuit voltage (VOC) of 692 mV, short-circuit current (JSC) of 26.9 mA cm-2, and fill factor (FF) of 65%. The FF of the cell is limited by the series resistances in the device, including the top contact, which can be mitigated in the future through device optimization. The highest measured VOC under 1 sun is 692 mV, which approaches the optically implied VOC of ≈795 mV extracted from the luminescence yield of p-InP. The design and performance of solar cells based on indium phosphide (InP) grown by the nonepitaxial thin-film vapor-liquid-solid growth technique is investigated. The cell structure consists of a Mo back contact, p-InP absorber layer, n-TiO2 electron selective contact, and an indium tin oxide transparent top electrode. The highest measured open circuit voltage (VOC) under 1 sun is 692 mV, which approaches the optically implied VOC of ≈795 mV extracted from the luminescence yield of p-InP.

Seeded growth of InP and InAs quantum rods using indium acetate and myristic acid

International Nuclear Information System (INIS)

Shweky, Itzhak; Aharoni, Assaf; Mokari, Taleb; Rothenberg, Eli; Nadler, Moshe; Popov, Inna; Banin, Uri

2006-01-01

A synthesis of soluble III-V semiconductor quantum rods using gold nanoparticles to direct and catalyze one-dimensional growth is developed. The growth takes place via the solution-liquid-solid (SLS) mechanism where proper precursors are injected into a coordinating solvent. We report the synthesis of InP nanorods using indium acetate and myristic acid with gold nanoparticles as the catalysts in the SLS growth mode. A similar route was successfully developed for the growth of InAs nanorods. We find that the amount of Au catalyst in the reaction is an important parameter to achieve shape control. Transmission electron microscope (TEM) images of InP and InAs nanocrystals revealed that the crystals are mostly rod-shaped, and provide strong evidence for Au presence in one edge. The rods were characterized structurally using X-ray diffraction and high-resolution TEM and optically by absorption and photoluminescence

Optimum third harmonic generation efficiency in the far infrared in Si, GaAs and InP

International Nuclear Information System (INIS)

Brazis, R.; Raguotis, R.; Siegrist, M.R.

1997-12-01

We investigate by means of a Monte Carlo technique the nonlinear drift response of electrons to high power electromagnetic waves in Si, GaAs and InP. The first and third harmonic drift velocity amplitudes and phases are presented as function of the pumping wave frequency in the range of 200 to 500 GHz. The third harmonic generation efficiency is found to reach a maximum at a pumping wave amplitude of 10-25 kV/cm depending on the material and the lattice temperature. Cooling down to liquid nitrogen temperature results in an improvement of the efficiency by a factor of 2 to 10, depending on the material and the pumping wave amplitude. Cooled GaAs and InP are both an order of magnitude more efficient than Si at ambient temperature, for which to date the best measured performance has been reported. (author) 2 figs., 5 refs

Label swapper device for spectral amplitude coded optical packet networks monolithically integrated on InP

NARCIS (Netherlands)

Muñoz, P.; García-Olcina, R.; Habib, C.; Chen, L.R.; Leijtens, X.J.M.; Vries, de T.; Robbins, D.J.; Capmany, J.

2011-01-01

In this paper the design, fabrication and experimental characterization of an spectral amplitude coded (SAC) optical label swapper monolithically integrated on Indium Phosphide (InP) is presented. The device has a footprint of 4.8x1.5 mm2 and is able to perform label swapping operations required in

Performance, Defect Behavior and Carrier Enhancement in Low Energy, Proton Irradiated p(+)nn(+) InP Solar Cells

Science.gov (United States)

Weinberg, I.; Rybicki, G. C.; Vargas-Aburto, C.; Jain, R. K.; Scheiman, D.

1994-01-01

InP p(+)nn(+) cells, processed by MOCVD, were irradiated by 0.2 MeV protons and their performance and defect behavior observed to a maximum fluence of 10(exp 13)/sq cm. Their radiation induced degradation, over this fluence range, was considerably+less than observed for similarly irradiated, diffused junction n p InP cells. Significant degradation occurred in both the cell's emitter and base regions the least degradation occurring in the depletion region. A significant increase in series resistance occurs at the highest fluenc.e. Two majority carrier defect levels, E7 and E10, are observed by DLTS with activation energies at (E(sub C) - 0.39)eV and (E(sub C) - 0.74)eV respectively. The relative concentration of these defects differs considerably from that observed after 1 MeV electron irradiation. An increased carrier concentration in the cell's n-region was observed at the highest proton fluence, the change in carrier concentration being insignificant at the lower fluences. In agreement with previous results, for 1 and 1.5 MeV electron irradiated InP p(+)n junctions, the defect level E10 is attributed to a complex between zinc, diffused into the n-region from the zinc doped emitter, and a radiation induced defect. The latter is assumed to be either a phosphorus vacancy or interstitial. The increased, or enhanced carrier concentration is attributed to this complex acting as a donor.

Electron capture cross-section of Au-Fe complex in silicon

Energy Technology Data Exchange (ETDEWEB)

Ali, Akbar; Shafi, M; Majid, Abdul [Advance Materials Physics Laboratory, Department of Physics, Quaid-i-Azam University, Islamabad (Pakistan)

2006-10-15

A deep level transient spectroscopy technique is applied to study the capture cross-section of an iron-gold complex. The thermal ionization energy obtained from emission rate data is found to be E{sub c} -0.36 eV. The Au-Fe complex is a single defect having a capture cross-section of 2.48x10{sup -16} cm{sup 2} for electrons which is independent of temperature.

The analytical center of INP - experience of becoming prospect of development

International Nuclear Information System (INIS)

Kadyrzhanov, K.K.; Kozhakhmetov, S.K.

2004-01-01

Full text: In 2001 in INP NNC RK the Analytical center has been organized as separate structural division. The primary goal of the Analytical center is all-round use of the scientific and technical potential, which has been saved up in INP NNC RK for the organization and carrying out of researches, actual for, first of all for the domestic companies, scientific institutes and the foreign companies working in Kazakhstan. In the report data on the equipment with which the Analytical center for performance of works is equipped are resulted. For these purposes the grants of the international organizations and funds are involved. For example, about two years it is maintained universal X-ray diffractometer Brucker D8 Advance got with support of U.S. CRDF (the project *KR2-993). Under the project *KAR2-1036-AL-03 the same fund in current of 2005 delivery of the specialized equipment for test of corrosion resistance of materials will be made. The site on preparation of materials in created and equipped with the specialized equipment. In the report results, both fundamental works, and data on the applied works executed with various partners - National Atomic Company 'KazAtomProm', Ulba Metallurgical Plant, 'Tengizchevroil' Oil Company, Pharmacological Company named 'B-clay' are discussed, etc. In the report the basic directions of the further development of works and expansions of geography of cooperation are formulated

Wirkung mineralischer N-Düngung auf Blatterträge und Scopolamingehalte von Duboisia sp.

Directory of Open Access Journals (Sweden)

Oster, Sabine

2014-09-01

Full Text Available Duboisia wird als Rohstofflieferant für Scopolamin verwendet. Dieses Tropanalkaloid wird aus dem Blattmaterial von Duboisia Arthybriden gewonnen und dient als Wirkstoff zur Therapie der Reisekrankheit sowie als Ausgangsstoff für partialsynthetische Anticholinergika. Für die effiziente Produktion sind hohe Erträge an Biomasse bei möglichst hohem Wirkstoffgehalt wünschenswert. Eine der abiotischen Einflussgrößen ist die Stickstoffernährung. Der hier beschriebene Freilandversuch stellt den Einfluss von vier unterschiedlich hohen N-Düngungsgaben (0 kg N/ha, 100 kg N/ha, 200 kg N/ha, 100+100 kg N/ha mit Kalkammonsalpeter (KAS auf drei Genotypen dar. Die N-Düngung zeigte keinen Einfluss auf den Scopolamingehalt, jedoch stieg mit erhöhter N-Menge die Biomasse signifikant an.

Integrated 1 GHz 4-channel InP phasar based WDM-receiver with Si bipolar frontend array

NARCIS (Netherlands)

Steenbergen, C.A.M.; Vreede, de L.C.N.; Dam, van C.; Scholtes, T.L.M.; Smit, M.K.; Tauritz, J.L.; Pedersen, J.W.; Moerman, I.; Verbeek, B.H.; Baets, R.G.F.

1995-01-01

An integrated 4-channel WDM-receiver frontend with 1 GHz channel bandwidth is described. The receiver consists of an integrated wavelength demultiplexer with photodiodes in InP technology connected through bond wires with a 4 channel Si bipolar transimpedance amplifier mounted on an epoxy board. The

New applications of elemental analysis methods using X-rays at the INPE Cyclotron

International Nuclear Information System (INIS)

Constantinescu, B.; Constantin, F.; Dima, S.; Plostinaru, D.; Popa-Simil, L.

1990-01-01

Some results in various samples elemental analysis using PIXE(Particle Induced X-ray Emission) method at INPE U-120 Cyclotron are presented. The main purpose of the research was the determination of metal concentration (Ca,Cr,Mn,Fe,Ni,Cu,Zn) in drug industry materials and products, some tree seeds as environmental pollution indicator, mineral oil and gasoline used in mechanical engineering, cooling water for oil industry equipment. (Author)

In situ monitoring of the surface reconstructions on InP(001) prepared by molecular beam epitaxy

Science.gov (United States)

Ozanyan, K. B.; Parbrook, P. J.; Hopkinson, M.; Whitehouse, C. R.; Sobiesierski, Z.; Westwood, D. I.

1997-07-01

Reflection anisotropy spectroscopy (RAS) and reflection high-energy electron diffraction (RHEED) were applied to study clean InP(001) surfaces prepared by molecular beam epitaxy (MBE). At phosphorus beam equivalent pressures (BEPs) between 3.5×10-7 and 3.5×10-6 mbar and substrate temperature (Ts) falling from 590 to 150 °C, (2×4), (2×1), (2×2), and c(4×4) RHEED patterns are observed. The main RAS features, observed at 1.7-1.9 and 2.6-2.9 eV are assigned to In and P dimers, respectively. The above reconstruction sequence is associated closely with transformations identified in RAS signatures that are induced by progressively increasing the P surface coverage. The RAS results also imply the existence of (2×4)α and (2×4)β phases. A surface-phase diagram for MBE-grown (001) InP, in the whole range of Ts and phosphorus BEPs is proposed.

InAs nanowire formation on InP(001)

International Nuclear Information System (INIS)

Parry, H. J.; Ashwin, M. J.; Jones, T. S.

2006-01-01

The heteroepitaxial growth of InAs on InP(001) by solid source molecular beam epitaxy has been studied for a range of different growth temperatures and annealing procedures. Atomic force microscopy images show that nanowires are formed for deposition in the temperature range of 400-480 deg. C, and also following high temperature annealing (480 deg. C) after deposition at 400 deg. C. The wires show preferential orientation along and often exhibit pronounced serpentine behavior due to the presence of kinks, an effect that is reduced at increasing growth temperature. The results suggest that the serpentine behavior is related to the degree of initial surface order. Kinks in the wires appear to act as nucleation centers for In adatoms migrating along the wires during annealing, leading to the coexistence of large three-dimensional islands

Medien und Berufsvorstellungen von Kindern: eine experimentelle Studie zum Einfluss von Kinderbüchern auf das Berufsspektrum von Kindergartenkindern

OpenAIRE

Brüggemann, Tim; Gehrau, Volker; Handrup, Jutta

2015-01-01

"Der Beitrag thematisiert zunächst den Stand der beruflichen Orientierung von Jugendlichen sowie die pädagogischen Bemühungen beim Übergang Schule-Beruf, insbesondere im Hinblick auf eine Erweiterung des häufig engen Spektrums von Berufen, die bei der Berufswahl berücksichtig werden. Dabei richten sich die Bestrebungen, diesem Problem entgegenzuwirken, bislang vor allem auf Jugendliche. Anschließend wird anhand vorliegender Ergebnisse aus der Medienforschung diskutiert, in welcher Weise Masse...

Topography of InP surface bombarded by O2+ ion beam

International Nuclear Information System (INIS)

Sun Zhaoqi

1997-01-01

The topography of InP surface bombarded by O 2 + ion beam was investigated. Rippled topographies were observed for bombarded samples, and the data show that the ripple formation starts from a sputtering depth of about 0.4 μm. The wavelength and the disorder of the ripples both increase as the sputtering depth increases. The wavelength of the ripples appears to be sputtering depth dependent rather than sputtering rate dependent. It is confirmed that the ion-beam-induced surface rippling can be effectively suppressed by sample rotation during bombardment

Al2O3 Passivation Effect in HfO2·Al2O3 Laminate Structures Grown on InP Substrates.

Science.gov (United States)

Kang, Hang-Kyu; Kang, Yu-Seon; Kim, Dae-Kyoung; Baik, Min; Song, Jin-Dong; An, Youngseo; Kim, Hyoungsub; Cho, Mann-Ho

2017-05-24

The passivation effect of an Al 2 O 3 layer on the electrical properties was investigated in HfO 2 -Al 2 O 3 laminate structures grown on indium phosphide (InP) substrate by atomic-layer deposition. The chemical state obtained using high-resolution X-ray photoelectron spectroscopy showed that interfacial reactions were dependent on the presence of the Al 2 O 3 passivation layer and its sequence in the HfO 2 -Al 2 O 3 laminate structures. Because of the interfacial reaction, the Al 2 O 3 /HfO 2 /Al 2 O 3 structure showed the best electrical characteristics. The top Al 2 O 3 layer suppressed the interdiffusion of oxidizing species into the HfO 2 films, whereas the bottom Al 2 O 3 layer blocked the outdiffusion of In and P atoms. As a result, the formation of In-O bonds was more effectively suppressed in the Al 2 O 3 /HfO 2 /Al 2 O 3 /InP structure than that in the HfO 2 -on-InP system. Moreover, conductance data revealed that the Al 2 O 3 layer on InP reduces the midgap traps to 2.6 × 10 12 eV -1 cm -2 (compared to that of HfO 2 /InP, that is, 5.4 × 10 12 eV -1 cm -2 ). The suppression of gap states caused by the outdiffusion of In atoms significantly controls the degradation of capacitors caused by leakage current through the stacked oxide layers.

Value and Anisotropy of the Electron and Hole Mass in Pure Wurtzite InP Nanowires.

Science.gov (United States)

Tedeschi, D; De Luca, M; Granados Del Águila, A; Gao, Q; Ambrosio, G; Capizzi, M; Tan, H H; Christianen, P C M; Jagadish, C; Polimeni, A

2016-10-12

The effective mass of electrons and holes in semiconductors is pivotal in determining the dynamics of carriers and their confinement energy in nanostructured materials. Surprisingly, this quantity is still unknown in wurtzite (WZ) nanowires (NWs) made of III-V compounds (e.g., GaAs, InAs, GaP, InP), where the WZ phase has no bulk counterpart. Here, we investigate the magneto-optical properties of InP WZ NWs grown by selective-area epitaxy that provides perfectly ordered NWs featuring high-crystalline quality. The combined analysis of the energy of free exciton states and impurity levels under magnetic field (B up to 29 T) allows us to disentangle the dynamics of oppositely charged carriers from the Coulomb interaction and thus to determine the values of the electron and hole effective mass. By application of B⃗ along different crystallographic directions, we also assess the dependence of the transport properties with respect to the NW growth axis (namely, the WZ ĉ axis). The effective mass of electrons along ĉ is m e ∥ = (0.078 ± 0.002) m 0 (m 0 is the electron mass in vacuum) and perpendicular to ĉ is m e ⊥ = (0.093 ± 0.001) m 0 , resulting in a 20% mass anisotropy. Holes exhibit a much larger (∼320%) and opposite mass anisotropy with their effective mass along and perpendicular to ĉ equal to m h ∥ = (0.81 ± 0.18) m 0 and m h ⊥ = (0.250 ± 0.016) m 0 , respectively. While no full consensus is found with current theoretical results on WZ InP, our findings show trends remarkably similar to the experimental data available in WZ bulk materials, such as InN, GaN, and ZnO.

Strain-Compensated InGaAsP Superlattices for Defect Reduction of InP Grown on Exact-Oriented (001 Patterned Si Substrates by Metal Organic Chemical Vapor Deposition

Directory of Open Access Journals (Sweden)

Ludovico Megalini

2018-02-01

Full Text Available We report on the use of InGaAsP strain-compensated superlattices (SC-SLs as a technique to reduce the defect density of Indium Phosphide (InP grown on silicon (InP-on-Si by Metal Organic Chemical Vapor Deposition (MOCVD. Initially, a 2 μm thick gallium arsenide (GaAs layer was grown with very high uniformity on exact oriented (001 300 mm Si wafers; which had been patterned in 90 nm V-grooved trenches separated by silicon dioxide (SiO2 stripes and oriented along the [110] direction. Undercut at the Si/SiO2 interface was used to reduce the propagation of defects into the III–V layers. Following wafer dicing; 2.6 μm of indium phosphide (InP was grown on such GaAs-on-Si templates. InGaAsP SC-SLs and thermal annealing were used to achieve a high-quality and smooth InP pseudo-substrate with a reduced defect density. Both the GaAs-on-Si and the subsequently grown InP layers were characterized using a variety of techniques including X-ray diffraction (XRD; atomic force microscopy (AFM; transmission electron microscopy (TEM; and electron channeling contrast imaging (ECCI; which indicate high-quality of the epitaxial films. The threading dislocation density and RMS surface roughness of the final InP layer were 5 × 108/cm2 and 1.2 nm; respectively and 7.8 × 107/cm2 and 10.8 nm for the GaAs-on-Si layer.

The design and manufacture of a notch structure for a planar InP Gunn diode

International Nuclear Information System (INIS)

Bai Yang; Jia Rui; Wu De-Qi; Jin Zhi; Liu Xin-Yu

2013-01-01

A planar InP-based Gunn diode with a notch doping structure is designed and fabricated for integration into millimeter-wave and terahertz integrated circuits. We design two kinds of InP-based Gunn diodes. One has a fixed diameter of cathode area, but has variable spacing between anode and cathode; the other has fixed spacing, but a varying diameter. The threshold voltage and saturated current exhibit their strong dependences on the spacing (10 μm–20 μm) and diameter (40 μm–60 μm) of the InP Gunn diode. The threshold voltage is approximately 4.5 V and the saturated current is in a range of 293 mA–397 mA. In this work, the diameter of the diode and the space between anode and cathode are optimized. The devices are fabricated using a wet etching technique and show excellent performances. The results strongly suggest that low-cost and reliable InP planar Gunn diodes can be used as single chip terahertz sources. (condensed matter: electronic structure, electrical, magnetic, and optical properties)

Investigation on electrical properties of diffusive p-n junctions in InP and solid solutions of InAssub(x)Psub(1-x)

International Nuclear Information System (INIS)

Agaev, Ya.; Atabaev, Kh.; Gazakov, O.

1977-01-01

Diodes from InP and from solid solutions of InAssub(0.6)Psub(0.4), InAssub(0.5)Psub(0.5) were obtained by the diffusion of Zn. The voltage-current characteristic was measured at a direct current in the temperature range from 80 to 300 K. The rectification factor is 10 4 and 2.5 -3.0 x10 2 , respectively, for InP and InAssub(x)Psub(1-x) p-n junctions. The lifetime, the series resistance and resistance of the p-n junction at a zero bias were calculated from an analysis of the voltage-current characteristics

Farbe bekennen – Grüne Bibliotheken auf die Tagesordnung! Vortrag auf dem 103. Deutschen Bibliothekartag, Bremen, 5. Juni 2014

Directory of Open Access Journals (Sweden)

Petra Hauke

2014-12-01

Full Text Available Was in vielen Ländern bereits im Alltag der Bibliotheken verankert ist, beginnt in Deutschland erst sehr zaghaft: Das Verantwortungsbewusstsein von Bibliotheken für die ökologische Bildung der Gesellschaft und die Konsequenzen daraus für die Bibliothekspraxis. Es ist höchste Zeit, in der deutschen Bibliothekslandschaft publik zu machen, was eine „Grüne Bibliothek“ sein kann – bezogen auf das Gebäude, die Ausstattung, das Management, die Services für die Nutzer. Anhand einer Checkliste wird gezeigt, wie Bibliotheken mit einem „grünen“ Konzept nicht nur selbst etwas für die ökologische Nachhaltigkeit tun können, sondern auch wie sie als Multiplikatoren in den Kommunen, Hochschulen und bei anderen Trägern Einfluss auf das ökologische Verhalten nehmen und damit einen wichtigen Beitrag für unsere Gesellschaft leisten. Bringing environmental awareness to libraries does not necessarily imply huge financial efforts or a big budget. Ecological sustainability is an undervalued aspect of the marketing strategy for libraries which has more impact on clients and on stakeholders than one would expect. Small steps in going green can make a big impact for the library’s image. Little financial input can produce an important marketing outcome. Activities in this field can be developed in cooperation with unpaid partners like non-governmental organisations (NGOs, Friends of the Library groups, library suppliers and, last but not least, the library users. A checklist on how to go green gives an overview of important aspects in planning, construction, and library operations in order to introduce the first “green footsteps”.

Kamera-basierte Erkennung von Geschwindigkeitsbeschränkungen auf deutschen Straen

Science.gov (United States)

Nienhüser, Dennis; Ziegenmeyer, Marco; Gumpp, Thomas; Scholl, Kay-Ulrich; Zöllner, J. Marius; Dillmann, Rüdiger

An Fahrerassistenzsysteme im industriellen Einsatz werden hohe Anforderungen bezüglich Zuverlässigkeit und Robustheit gestellt. In dieser Arbeit wird die Kombination robuster Verfahren wie der Hough-Transformation und Support-Vektor-Maschinen zu einem Gesamtsystem zur Erkennung von Geschwindigkeitsbeschränkungen beschrieben. Es setzt eine Farbvideokamera als Sensorik ein. Die Evaluation auf Testdaten bestätigt durch die ermittelte hohe Korrektklassifikationsrate bei gleichzeitig geringer Zahl Fehlalarme die Zuverlässigkeit des Systems.

An Efficient and Effective Design of InP Nanowires for Maximal Solar Energy Harvesting.

Science.gov (United States)

Wu, Dan; Tang, Xiaohong; Wang, Kai; He, Zhubing; Li, Xianqiang

2017-11-25

Solar cells based on subwavelength-dimensions semiconductor nanowire (NW) arrays promise a comparable or better performance than their planar counterparts by taking the advantages of strong light coupling and light trapping. In this paper, we present an accurate and time-saving analytical design for optimal geometrical parameters of vertically aligned InP NWs for maximal solar energy absorption. Short-circuit current densities are calculated for each NW array with different geometrical dimensions under solar illumination. Optimal geometrical dimensions are quantitatively presented for single, double, and multiple diameters of the NW arrays arranged both squarely and hexagonal achieving the maximal short-circuit current density of 33.13 mA/cm 2 . At the same time, intensive finite-difference time-domain numerical simulations are performed to investigate the same NW arrays for the highest light absorption. Compared with time-consuming simulations and experimental results, the predicted maximal short-circuit current densities have tolerances of below 2.2% for all cases. These results unambiguously demonstrate that this analytical method provides a fast and accurate route to guide high performance InP NW-based solar cell design.

Effekte des oxidativen Stresses auf die Expression der Scavenger-Rezeptoren CD36 und SR-BI und des Transkriptionsfaktors PPARγ in Makrophagen

OpenAIRE

Westendorf, Thomas

2006-01-01

Ziel dieser Dissertationsschrift war es, die Effekte des oxidativen Stresses in Form von oxLDL auf die Expression der atherogenen Scavenger-Rezeptoren CD36, SR-BI, des Transkriptionsfaktors PPARγ und pro-inflammatorischer Zytokine zu untersuchen. Die durchgeführten Untersuchungen beruhen auf der Annahme, dass modifizierte LDL durch Induktion der genannten Scavenger-Rezeptoren und nachfolgende unregulierte Aufnahme in Makrophagen mit Bildung von Schaumzellen entscheidend zur Entwicklung einer ...

Market analysis offshore wind energy; Marktanalyse Windenergie auf See

Energy Technology Data Exchange (ETDEWEB)

NONE

2015-07-01

will implement against the background of high Investment volumes and technical challenges each but usually only a manageable number of projects in Europe per year. The various legal requirements in the area of offshore wind energy, and in particular planning, Licensing and network side should be further coordinated and more interlinked. Considerations are also European regulations and the support systems of our European neighbors. [German] Der Nordsee kommt im Vergleich zur Ostsee aufgrund des verfuegbaren Flaechenangebots ein deutlich groesseres Potenzial zu. Im Vergleich zur Nordsee liegen die erschliessbaren Potenziale der Ostsee allerdings deutlich kuestennaeher, was nicht nur beim Netzanschluss sondern auch beim Bau und Betrieb der Anlagen Effizienzvorteile haben kann. Noch ist unklar, ob die verfuegbaren Flaechen im Kuestenmeer der Ostsee in relevanten Groessenordnung erweitert werden koennen. Der entsprechende Raumplanungsprozess wurde im Jahr 2014 durch Mecklenburg-Vorpommern angestossen. Die Analyse der im Bundesfachplan Offshore festgelegten Cluster, die der Offshore-Netzentwicklungsplan in Zonen fuer die Nord- und Ostsee (1-5) strukturiert, zeigt, dass zumindest in der Ausbauphase bis 2025, ggf. auch bis 2030 die kuestennaeheren Zonen 1 und 2 in Nord- und Ostsee ein ausreichendes Flaechenpotential bieten und zugleich im Hinblick auf einen effizienten und strukturierten Netzausbau erschlossen werden sollten. Der Ausbaupfad bis 2020 ermoeglicht die von der Industrie in Aussicht gestellten Kostendegressionen in Hoehe von ueber 30 Prozent. Die bereits heute erkennbaren Kostensenkungen muessen insofern im Rahmen der Erarbeitung des Ausschreibungsdesigns beruecksichtigt werden. Dies gilt auch fuer die Frage eines optimalen Park- und Anlagendesigns aus energiewirtschaftlicher Sicht. Neben jeweils projektinternen Schwierigkeiten auf Netz- wie auf Windparkseite liegen erhebliche Schnittstellenprobleme zwischen Windpark und Netzanschluss. Dies liegt u.a. an den

InP and GaAs characterization with variable stoichiometry obtained by molecular spray

Science.gov (United States)

Massies, J.; Linh, N. T.; Olivier, J.; Faulconnier, P.; Poirier, R.

1979-01-01

Both InP and GaAs surfaces were studied in parallel. A molecular spray technique was used to obtain two semiconductor surfaces with different superficial compositions. The structures of these surfaces were examined by electron diffraction. Electron energy loss was measured spectroscopically in order to determine surface electrical characteristics. The results are used to support conclusions relative to the role of surface composition in establishing a Schottky barrier effect in semiconductor devices.

Radiation hardening of InP solar cells for space applications

International Nuclear Information System (INIS)

Vilela, M. F.; Freundlich, A.; Monier, C.; Newman, F.; Aguilar, L.

1998-01-01

The aim of this work is to develop a radiation resistant thin InP-based solar cells for space applications on more mechanically resistant, lighter, and cheaper substrates. In this paper, we present the development of a p + /nn + InP-based solar cell structures with very thin emitter and base layers. A thin emitter helps to increase the collection of carriers generated by high energy incident photons from the solar spectrum. The use of a thin n base structure should improve the radiation resistance of this already radiation resistant technology. A remarkable improvement of high energy photons response is shown for InP solar cells with emitters 400 A thick

Nuclear geophysics in space and atmospheric reserch at INPE/BRAZIl

International Nuclear Information System (INIS)

Nordemann, D.J.R.; Pereira, E.B.; Marinho, E.V.A.; Sircilli Neto, F.

1986-05-01

During the last years, INPE's research in Nuclear Geophysics has developed in fields of interest to the Institute, the scientific community and the society in general. In the space research field it may be considered as a contribution to the history of meteorite falls in our planet or possible collision with big meteorites which may have been the cause of important effects such as biological extinction and extraterrestrial matter gathering. In the atmospheric research field, spatial and temporal variations of radon measurements in the lower atmosphere allow correlations from micrometeorology to worlwide scale through mesoscale, in the interpretation of phenomena which deal with the dynamics of air masses. (Author) [pt

Characterization of semi-insulating materials by photoinduced current transient spectroscopy: Fe doped INP for micro-optoelectronics and CdZnTe for nuclear detection

International Nuclear Information System (INIS)

Cherkaoui, K.

1998-01-01

The need of semi-insulating materials, of great quality, concerns various application domains. For instance, the very resistive substrates InP and CdZnTe are respectively adapted to the micro-optoelectronic circuits and to nuclear detectors. These two materials have been characterized by the thermal photoinduced current transient spectroscopy. The first part of this thesis is the defects analysis of annealing InP substrates, to understand the compensation process of this material. Two activation energy levels around 0,2 to 0,4 eV resulting from the thermal treatment have been detected. The iron omnipresence in the substrates, even undoped, has been noticed. It is then necessary to take into account the iron presence to understand the compensation process in these InP annealing substrates. the second part presents the study of the CdZnTe material, elaborated by the Bridgman method, to emphasize the defects leading to the decrease of the detector performances. The presence of three deep levels, near the forbidden band middle, is in relation with the detectors performances. (A.L.B.)

3D thermal simulations and modeling of multi-finger InP DHBTs for millimeter-wave power amplifiers

DEFF Research Database (Denmark)

Midili, Virginio; Nodjiadjim, V.; Johansen, Tom Keinicke

2017-01-01

This paper presents the comparison between the simulated and measured thermal resistance of InP Double Heterojunction Bipolar Transistors (DHBT). 3D thermal simulations were carried out in order to compute the temperature distribution across the full structure due to a constant power excitation...

Review: Eine Replik auf: Schmitt, Rudolf (2011. Review Essay: Rekonstruktive und andere Metaphernanalysen

Directory of Open Access Journals (Sweden)

Jan Kruse

2012-03-01

Full Text Available udolf SCHMITT ist unbestreitbar ein fundierter Experte im deutschsprachigen Raum im Hinblick auf eine umfassende und fokussierte Metaphernanalyse als ein spezifisches Verfahren der Analyse qualitativer Daten. Mit seiner in FQS erschienenen Rezension zu unserem Buch "Metaphernanalyse. Ein rekonstruktiver Ansatz" wird dies abermals deutlich. SCHMITT ordnet unser Verfahren zur rekonstruktiven Metaphernanalyse in andere sozialwissenschaftliche Metaphernanalysen ein und versucht auf dieser Grundlage, Vor- und Nachteile unseres metaphernanalytischen Zugangs hervorzuheben. Ausgehend von diesem Vergleichshorizont gelingt ihm die Besprechung eines grundlegenden Buches zur Einführung in die sozialwissenschaftliche Metaphernanalyse – welches unser Buch aber weder ist noch vorgibt zu sein. Wir begrüßen seine breit gefächerte Auswahl sozialwissenschaftlicher metaphernanalytischer Zugänge, glauben aber, dass die Zielsetzungen unseres Ansatzes (und unseres Buches in seinem Review-Essay zu sehr in den Hintergrund treten. Wir haben uns daher zu dieser Replik entschlossen, um die "sozialwissenschaftliche Metaphernanalyse" weiter in einem diskursiven Prozess zu halten. URN: http://nbn-resolving.de/urn:nbn:de:0114-fqs1202102

Der Einfluss von Mixed Emotions auf die Werbewirkung : eine experimentelle Studie

OpenAIRE

Bauer, Hans H.; Donnevert, Tobias; Exler, Stefanie; Hobusch, Sonja

2007-01-01

Emotionale Appelle haben heutzutage einen festen Platz in der Werbung. Neben rein positiven sowie rein negativen Emotionen werden auch Mixed Emotions verstärkt eingesetzt. Die Erforschung der konsumentenverhaltensrelevanten Wirkungen von Mixed Emotions, die das gleichzeitige oder sequentielle Erleben gegensätzlicher Emotionen bezeichnen, steckt jedoch noch in den Kinderschuhen. In der vorliegenden Studie wird daher der Einfluss von Mixed Emotions auf zentrale psychographische Werbewirku...

Self-organizing nanodot structures on InP surfaces evolving under low-energy ion irradiation: analysis of morphology and composition.

Science.gov (United States)

Radny, Tobias; Gnaser, Hubert

2014-01-01

Surfaces of InP were bombarded by 1.9 keV Ar(+) ions under normal incidence. The total accumulated ion fluence Φ the samples were exposed to was varied from 1 × 10(17) cm(-2) to 3 × 10(18) cm(-2), and ion fluxes f of (0.4 - 2) × 10(14) cm(-2) s(-1) were used. The surface morphology resulting from these ion irradiations was examined by atomic force microscopy (AFM). Generally, nanodot structures are formed on the surface; their dimensions (diameter, height and separation), however, were found to depend critically on the specific bombardment conditions. As a function of ion fluence, the mean radius r, height h, and spacing l of the dots can be fitted by power-law dependences: r ∝ Φ(0.40), h ∝ Φ(0.48), and l ∝ Φ(0.19). In terms of ion flux, there appears to exist a distinct threshold: below f ~ (1.3 ± 0.2) × 10(14) cm(-2) s(-1), no ordering of the dots exists and their size is comparatively small; above that value of f, the height and radius of the dots becomes substantially larger (h ~ 40 nm and r ~ 50 nm). This finding possibly indicates that surface diffusion processes could be important. In order to determine possible local compositional changes in these nanostructures induced by ion impact, selected samples were prepared for atom probe tomography (APT). The results indicate that APT can provide analytical information on the composition of individual InP nanodots. By means of 3D APT data, the surface region of such nanodots evolving under ion bombardment could be examined with atomic spatial resolution. At the InP surface, the values of the In/P concentration ratio are distinctly higher over a distance of approximately 1 nm and amount to 1.3 to 1.7.

Effective surface passivation of InP nanowires by atomic-layer-deposited Al2O3 with POx interlayer

NARCIS (Netherlands)

Black, L.E.; Cavalli, A.; Verheijen, M.A.; Haverkort, J.E.M.; Bakkers, E.P.A.M.; Kessels, W.M.M.

2017-01-01

III/V semiconductor nanostructures have significant potential in device applications, but effective surface passivation is critical due to their large surface-to-volume ratio. For InP such passivation has proven particularly difficult, with substantial depassivation generally observed following

Verbesserung bei Patienten durch den Community Reinforcement Approach: Effekte auf Zufriedenheit und psychiatrische Symptome

NARCIS (Netherlands)

Roozen, H.G.; Greeven, P.G.J.; Dijkstra, B.A.G.; Bischof, G.

2013-01-01

Patienten mit Suchterkrankungen weisen ein eingeschränktes Wohlbefinden auf. Eine Querschnittsstudie mit einem Prä-Post-Behandlungsdesign wurde durchgeführt, um Behandlungs­effekte des Community Reinforcement Approach (CRA) hinsichtlich Zufriedenheit und psychia­trischer Symptome zu erfassen. Die

Effects of coating molecules on the magnetic heating properties of Au-Fe3O4 heterodimer nanoparticles

Science.gov (United States)

Yamamoto, Y.; Ogasawara, J.; Himukai, H.; Itoh, T.

2016-10-01

In this paper, we report the heating properties of gold-magnetite (Au-Fe3O4) heterodimer nanoparticles (NPs) subjected to an alternating magnetic field. The Au-Fe3O4 NPs coated with oleic acid and oleylamine (OA) were synthesized through a method that combines seed mediation and high-temperature decomposition. The coating was replaced with dimercaptosuccinic acid (DMSA) by the ligand-exchange method. The specific absorption rates (SARs) for the OA- and DMSA-coated Au-Fe3O4 NPs coated with OA and DMSA at room temperature were determined through the calorimetric and magnetometric methods. SAR depended on the square of the magnetic field H up to an H value of 4 kA/m. The absolute value of the SAR for DMSA-coated NPs is about fivefold higher than that of the OA-coated NPs. The AC magnetic hysteresis measurements showed the recovery of the magnetic volume and the decrease in the magnetic anisotropy of the DMSA-coated NPs relative to those of the OA-coated NPs. These results suggest that the protective agent influences the magnetic properties of magnetite NPs via gold NPs.

Auswirkungen der Zugänglichkeit independenten und interdependenten Selbstwissens auf den Selbstwert

OpenAIRE

Birkner, Norbert

2003-01-01

In drei Studien werden Befunde vorgelegt, die dafür sprechen, dass der Selbstwert von Personen mit independentem Selbstkonzept anders generiert wird als von Personen mit interdependentem Selbstkonzept, genauer sich aus unterschiedlichen Quellen speist. Innerhalb der drei Untersuchungsstichproben erfolgte die Klassifizierung der differenzierten Selbstkonstruktionen, die idealtypisch in individualistischen und kollektivistischen Kulturen entwickelt werden (Markus & Kitayama, 1991), auf Grundlag...

Öffentliche Wohnraumförderung — auf dem richtigen Weg?

OpenAIRE

van Suntum, Ulrich; Gedaschko, Axel; Voigtländer, Michael; Schrooten, Mechthild; Theurl, Theresia

2016-01-01

Die hohen Flüchtlingszahlen und die wachsende Nachfrage nach Wohnungen in den Ballungsräumen haben die Politik veranlasst, die lange vernachlässigte öffentliche Wohnraumförderung wieder in den Blick zu nehmen. Um rasch neuen Wohnraum anzubieten, schlagen die Autoren unterschiedliche Maßnahmen vor. Dabei kommt es darauf an, sie effizient auf die Zielgruppe zuzuschneiden. Welche Gewichtung die Objekt- und die Subjektförderung dabei haben sollte, wird unterschiedlich bewertet. Genossenschaften s...

Randzonenveränderung beim Bohren und ihre Auswirkung auf Folgebearbeitungsverfahren

OpenAIRE

Schmier, Marcus

2004-01-01

In der Praxis kommt es bei der spanenden Bearbeitung immer wieder zu großen Standwegunterschieden identischer Werkzeuge bei vordergründig identischen Bearbeitungsrandbedingungen. Insbesondere bei Fertigungsschritten, die das Bohren als Vorbearbeitung erfordern, kommt es gelegentlich zu atypischen Verschleißerscheinungen, die auf das Entstehen einer Neuhärtezone an der Werkstückoberfläche beim Bohren zurückgeführt werden. Grundsätzlich sind Randzonenveränderungen eine Folge der mechanischen un...

Millimeter‐wave INP DHBT power amplifier based on power‐optimized cascode configuration

DEFF Research Database (Denmark)

Johansen, Tom K.; Yan, Lei; Dupuy, Jean‐Yves

2013-01-01

This letter describes the use of a power‐optimized cascode configuration for obtaining maximum output power at millimeter‐wave (mm‐wave) frequencies for a two‐way combined power amplifier (PA). The PA has been fabricated in a high‐speed InP double heterojunction bipolar transistor technology and ...... configuration at mm‐wave frequencies are confirmed by both simulations and experimental results. © 2013 Wiley Periodicals, Inc. Microwave Opt Technol Lett 55:1178–1182, 2013; View this article online at wileyonlinelibrary.com. DOI 10.1002/mop.27477...

Ultrafast carrier dynamics in Br.sup.+./sup.-bombarded InP studied by time-resolved terahertz spectroscopy

Czech Academy of Sciences Publication Activity Database

Němec, Hynek; Fekete, Ladislav; Kadlec, Filip; Kužel, Petr

2008-01-01

Roč. 78, č. 23 (2008), 235206/1-235206/7 ISSN 1098-0121 R&D Projects: GA MŠk LC512 Institutional research plan: CEZ:AV0Z10100520 Keywords : InP * carrier lifetime * carrier mobility * ultrafast * ion-bombardment * terahertz Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 3.322, year: 2008

Evidence for two distinct defects contributing to the H4 deep-level transient spectroscopy peak in electron-irradiated InP

International Nuclear Information System (INIS)

Darwich, R.; Massarani, B.; Kaaka, M.; Awad, F.

2000-01-01

Deep-level transient spectroscopy (DLTS) has been used to study the dominant deep-level H4 produced in InP by electron irradiation. The characteristics of the H4 peak in Zn-doped Inp has been studied as a function of pulse duration (t p ) before and after annealing. The results show that at least two traps contribute to the H4 peak: one is a fast trap (labeled H4 f ) and the other is a show trap (labeled H4 s ). This is show through several results concerning the activation energy, the capture cross section, the full width at half-maximum, and the peak temperature shift. It is shown that both traps are irradiation defects created in P sublattice. (authors)

MOVPE grown InGaAs quantum dots of high optical quality as seed layer for low-density InP quantum dots

International Nuclear Information System (INIS)

Richter, D; Hafenbrak, R; Joens, K D; Schulz, W-M; Eichfelder, M; Rossbach, R; Jetter, M; Michler, P

2010-01-01

To achieve a low density of optically active InP-quantum dots we used InGaAs islands embedded in GaAs as a seed layer. First, the structural InGaAs quantum dot properties and the influence of the annealing technique was investigated by atomic force microscope measurements. High-resolution micro-photoluminescence spectra reveal narrow photoluminescence lines, with linewidths down to 11 μeV and fine structure splittings of 25 μeV. Furthermore, using these InGaAs quantum dots as seed layer reduces the InP quantum dot density of optically active quantum dots drastically. InP quantum dot excitonic photoluminescence emission with a linewidth of 140 μeV has been observed.

Influence on components of EU directives; Einfluss von EG-Richtlinien auf Komponenten. Einfluss der EG-Druckgeraeterichtlinie (97/23/EG) auf die Komponenten eines Kernkraftwerks vom Typ Konvoi

Energy Technology Data Exchange (ETDEWEB)

Kreckel, D. [Siemens AG, Bereich Energieerzeugung (KWU), Offenbach (Germany)

1998-11-01

Convoy-type nuclear power plant maintenance is subject to the specifications contained in the Technical Rules, as dated in the Annex, on the basis of the operating permits issued under Sec. 7 of the German Atomic Energy Act. The introduction of the Single European Market and the adoption of European directives in the field of equipment safety have influenced, and will continue to influence, the national legislative structure. Changes affecting convoy-type nuclear power plants can be found in the applicable laws and directives, such as the Atomic Energy Act, the Industrial Code, and in new regulations, such as the Equipment Safety Act with its associated ordinances, and the applicable engineered safeguards rules, such as KTA, AD, VdTUeV, VDI. Moreover, the generally recognized state of the art as laid down in DIN, SEL, SEW publications is subject to permanent European harmonization and, consequently, comprehensive national reorganization. These boundary conditions can be upheld only if the specifications about the advancing state of the art specified in the operating permits are put into effect painstakingly. The profile of requirements contained in these specifications must be aligned to the new situation in Germany (dominated by Europe) with the licensing authority and the competent expert consultant within the supervisory procedure for operation under the Atomic Energy Act. The situation described here for the modern convoy-type nuclear power plants must be extrapolated also to older nuclear power plants, albeit subject to a supplementary adaptation to the respective licensing situation. (orig.) [Deutsch] Fuer die Instanhaltung der Konvoi-Kernkraftwerke gelten die Spezifikationen mit dem in den Anhaengen datierten Stand der Technischen Regeln gemaess der auf Basis des AtG Paragraph 7 erteilten Betriebsgenehmigungen. Mit der Einfuehrung des Europaeischen Binnenmarktes und Verabschiedung Europaeischer Richtlinien auf dem Sektor der Geraetesicherheit wurde und wird

Pharmakobotanische Untersuchungen von Lavendelsorten auf dem Plattensee- Plateau

Directory of Open Access Journals (Sweden)

Tóth, Frida

2014-09-01

Full Text Available Auf dem Hof Dörgicsei Levendula Major GmbH wurden 9 Lavendelsorten (6 Sorten von Lavandula angustifolia und 3 Sorten von Lavandula x intermedia untersucht. Neben den morphologischen und Wachstumseigenschaften wurden auch Frisch- und Trockengewichte bewertet. Quantitative und qualitative Untersuchungen von den Blüten- und Ätherischöldrogen wurden auch durchgeführt. Die statistische Analyse zeigte signifikant höhere Erträge bei den Sorten L. angustifolia ’Essence Purple’ und L. x intermedia ’Edelweiss’. Gehalt und Zusammensetzung von ätherischem Öl war eindeutig bei der Sorte L. angustifolia ’Ellagance Purple’ am günstigsten.

Overcoming doping limits in MOVPE grown n-doped InP for plasmonic applications

DEFF Research Database (Denmark)

Panah, Mohammad Esmail Aryaee; Xiao, Sanshui; Lavrinenko, Andrei

2015-01-01

Effect of the growth parameters on carrier concentration in MOVPE grown silicon-doped InP is studied. The dopant flow, V/III ratio and substrate temperature are optimized by considering the origin of the doping limits. In addition, two different group V precursors, namely PH3 and TBP, are compare......×1019cm-3 is achieved. Optical properties of the samples are investigated by Fourier transform infrared reflection (FTIR) spectroscopy and are fitted by a Drude-Lorentz function....

Einfluss von Hypothyreose und Mukoviszidose auf das Ruhe- und Belastungs-EKG

OpenAIRE

Gerlach, Julia

2009-01-01

Bei Menschen, die an cystischer Fibrose oder auch an einer Hypothyreose erkrankt sind, ist die Beteiligung des Herz-Kreislauf-Systems eine bekannte Komplikation. Ziel dieser Arbeit war, möglicherweise bislang unbekannte Auswirkungen dieser Erkrankungen auf das Belastungs-EKG von Kindern und Jugendlichen zu identifizieren und ggf. zu deuten. Dadurch sollte die Beurteilbarkeit des Belastungs-EKGs bei der Untersuchung der genannten Patientengruppen verbessert werden. Es wurden insgesamt 64 Patie...

Insulated InP (100) semiconductor by nano nucleus generation in pure water

Science.gov (United States)

Ghorab, Farzaneh; Es'haghi, Zarrin

2018-01-01

Preparation of specified designs on optoelectronic devices such as Light-Emitting Diodes (LEDs) and Laser Diodes (LDs) by using insulated thin films is very important. InP as one of those semiconductors which is used as optoelectronic devices, have two different kinds of charge carriers as n-InP and p-InP in the microelectronic industry. The surface preparation of this kind of semiconductor can be accomplished with individually chemical, mechanical, chemo - mechanical and electrochemical methods. But electrochemical method can be suitably replaced instead of the other methods, like CMP (Chemical Mechanical Polishing), because of the simplicity. In this way, electrochemically formation of insulated thin films by nano nucleus generation on semiconductor (using constant current density of 0.07 mA /cm2) studied in this research. Insulated nano nucleus generation and their growth up to thin film formation on semiconductor single crystal (100), n-InP, inpure water (0.08 µs/cm,25°c) characterized by Atomic Force Microscopy (AFM), Scanning Electron Microscopy (SEM), Four-point probe and Styloprofilometer techniques. The SEM images show active and passive regions on the n-InP surface and not uniform area on p-InP surface by passing through the passive condition. So the passive regions were nonuniform, and only the active regions were uniform and clean. The various semiconducting behavior in electrochemical condition, studied and compared with structural specification of InP type group (III-V).

High detection performance of particle detectors based on SI InP doped with Ti and Zn

Czech Academy of Sciences Publication Activity Database

Gorodynskyy, Vladyslav; Yatskiv, Roman; Žďánský, Karel; Pekárek, Ladislav

2008-01-01

Roč. 55, č. 5 (2008), s. 2785-2788 ISSN 0018-9499 R&D Projects: GA AV ČR KAN400670651 Institutional research plan: CEZ:AV0Z10100520; CEZ:AV0Z20670512 Keywords : radiation detection * InP * crystal growth Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 1.518, year: 2008

XRD Investigation of the relaxation of InAsP layers grown by CBE on (100) InP

NARCIS (Netherlands)

Marschner, T.H.; Leijs, M.R.; Vonk, H.; Wolter, J.H.

1998-01-01

We present X-ray diffraction (XRD) investigations of the influence of the substrate off-orientation on the relaxation of InAsP layers grown on InP by chemical beam epitaxy (CBE). Our measurements show that with beginning relaxation the As-concentration increases drastically and stays constant if the

Einfluss der Etch-and-Rinse-Technik auf Adper Easy Bond

OpenAIRE

Kunstmann, Thorsten

2011-01-01

Ziel der vorliegenden Studie war es die Auswirkungen der Etch-and-Rinse-Technik auf die Randqualität von Kompositfüllungen bei Anwendung des selbstätzenden Bondingsystems Adper Easy Bond zu untersuchen. An 64 extrahierten menschlichen Molaren wurden tiefe Klasse-II-Kavitäten präpariert, deren approximale Begrenzung unterhalb der Schmelz-Zement-Grenze lag. Diese wurden in acht Gruppen aufgeteilt, jeweils mit 8 Zähnen pro Gruppe, und mittels verschiedener Bonding-Techniken mit Kompositfüllungen...

75 GHz InP DHBT power amplifier based on two-stacked transistors

DEFF Research Database (Denmark)

Squartecchia, Michele; Midili, Virginio; Johansen, Tom Keinicke

2017-01-01

In this paper we present the design and measurements of a two-stage 75-GHz InP Double Heterojunction Bipolar Transistor (DHBT) power amplifier (PA). An optimized two-stacked transistor power cell has been designed, which represents the building block in the power stage as well as in the driver st......, the power amplifier exhibits a small signal gain of G = 12.6 dB, output power at 1-dB compression of Pout, 1dB = 18.6 dBm and a saturated output power of Psat > 21.4 dBm....

Multiple growths of epitaxial lift-off solar cells from a single InP substrate

International Nuclear Information System (INIS)

Lee, Kyusang; Shiu, Kuen-Ting; Zimmerman, Jeramy D.; Forrest, Stephen R.; Renshaw, Christopher K.

2010-01-01

We demonstrate multiple growths of flexible, thin-film indium tin oxide-InP Schottky-barrier solar cells on a single InP wafer via epitaxial lift-off (ELO). Layers that protect the InP parent wafer surface during the ELO process are subsequently removed by selective wet-chemical etching, with the active solar cell layers transferred to a thin, flexible plastic host substrate by cold welding at room temperature. The first- and second-growth solar cells exhibit no performance degradation under simulated Atmospheric Mass 1.5 Global (AM 1.5G) illumination, and have a power conversion efficiency of η p =14.4±0.4% and η p =14.8±0.2%, respectively. The current-voltage characteristics for the solar cells and atomic force microscope images of the substrate indicate that the parent wafer is undamaged, and is suitable for reuse after ELO and the protection-layer removal processes. X-ray photoelectron spectroscopy, reflection high-energy electron diffraction observation, and three-dimensional surface profiling show a surface that is comparable or improved to the original epiready wafer following ELO. Wafer reuse over multiple cycles suggests that high-efficiency; single-crystal thin-film solar cells may provide a practical path to low-cost solar-to-electrical energy conversion.

Der Einfluss von rechtsgerichtetem Autoritarismus und sozialer Dominanzorientierung auf homophobe Einstellungen

Directory of Open Access Journals (Sweden)

Sarah Andrejewski

2016-06-01

Full Text Available Das Thema Homophobie geriet seit 2012 verstärkt in das Interesse der Medien. Ursachen waren u.a. die Erlassung homophober Gesetze in Russland, Outings von prominenten Persönlichkeiten wie Fußballspieler und Politiker oder die in Frankreich auftretenden Massendemonstrationen zur Verhinderung der gleichgeschlechtlichen Ehe. Durch das kürzlich stattfindende Attentat in einem beliebten Club der LGBT-Community in Orlando ist das Thema präsenter denn je. Neben Untersuchungen, die aufdecken, welchen Vorurteilen Menschen mit einer homosexuellen Ausrichtung ausgesetzt sind und wie sich diese im Alltag der Betroffenen niederschlagen, suchen vermehrt Studien nach den Gründen dieser Vorurteile. Die vorliegende Arbeit bedient sich dazu etablierter Konzepte aus der Vorurteilsforschung, um diese in einen Zusammenhang mit homophoben Einstellungen und Verhaltensweisen zu bringen. Mithilfe einer Online-Befragung von 249 heterosexuellen Teilnehmern wurde der Einfluss von rechtsgerichteten Autoritarismus (RWA, sozialer Dominanzorientierung (SDO und sozialer Identität (SI auf homophobe Einstellungen ermittelt. Es konnte nachgewiesen werden, dass die untersuchten Variablen negativ auf die Einstellungen der Untersuchungsteilnehmer gegenüber Schwulen und Lesben wirken. Gleichzeitig wurde die Mediatorrolle der sozialen Identität als Identifikation mit der eigenen heterosexuellen Orientierung getestet und nachgewiesen, dass diese als Mediator zwischen RWA, SDO und homophoben Einstellungen fungiert.

On-chip patch antenna on InP substrate for short-range wireless communication at 140 GHz

DEFF Research Database (Denmark)

Dong, Yunfeng; Johansen, Tom Keinicke; Zhurbenko, Vitaliy

2017-01-01

This paper presents the design of an on-chip patch antenna on indium phosphide (InP) substrate for short-range wireless communication at 140 GHz. The antenna shows a simulated gain of 5.3 dBi with 23% bandwidth at 140 GHz and it can be used for either direct chip-to-chip communication or chip...

Extremely improved InP template and GaInAsP system growth on directly-bonded InP/SiO2-Si and InP/glass substrate

International Nuclear Information System (INIS)

Matsumoto, Keiichi; Makino, Tatsunori; Kimura, Katsuya; Shimomura, Kazuhiko

2013-01-01

We have developed an ultrathin InP template with low defect density on SiO 2 -Si and glass substrate by employing wet etching and wafer direct bonding technique. We have demonstrated epitaxial growth on these substrates and GaInAs/InP multiple quantum well layers were grown by low pressure metal-organic vapor-phase epitaxy. Photoluminescence measurements of the layers show that they are optically active and we have obtained almost the same intensity from these substrates compared to the InP substrate. These results may be attributed to improvement of InP template quality and should provide further improvements in device performance realized on SiO 2 -Si and glass substrate. And, these are promising results in terms of integration of InP-based several functional optical devices on SiO 2 -Si and glass substrate. (copyright 2013 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

Multi-wavelength laser based on an arrayed waveguide grating and Sagnac loop reflectors monolithically integrated on InP

NARCIS (Netherlands)

Muñoz, P.; García-Olcina, R.; Doménech, J.D.; Rius, M.; Capmany, J.; Chen, L.R.; Habib, C.; Leijtens, X.J.M.; Vries, de T.; Heck, M.J.R.; Augustin, L.M.; Nötzel, R.; Robbins, D.J.

2010-01-01

In this paper, a multi-wavelength laser monolithically integrated on InP is presented. A linear laser cavity is built between two integrated Sagnac loop reflectors, with an Arrayed Waveguide Grating (AWG) as frequency selective device, and Semiconductor Optical Amplifiers (SOA) as gain sections. The

Integrated cloud infrastructure of the LIT JINR, PE "NULITS" and INP's Astana branch

Science.gov (United States)

Mazhitova, Yelena; Balashov, Nikita; Baranov, Aleksandr; Kutovskiy, Nikolay; Semenov, Roman

2018-04-01

The article describes the distributed cloud infrastructure deployed on the basis of the resources of the Laboratory of Information Technologies of the Joint Institute for Nuclear Research (LIT JINR) and some JINR Member State organizations. It explains a motivation of that work, an approach it is based on, lists of its participants among which there are private entity "Nazarbayev University Library and IT services" (PE "NULITS") Autonomous Education Organization "Nazarbayev University" (AO NU) and The Institute of Nuclear Physics' (INP's) Astana branch.

The role of strain-driven in migration in the growth of self-assembled InAs quantum dots on InP

CERN Document Server

Yoon, S H; Lee, T W; Hwang, H D; Yoon, E J; Kim, Y D

1999-01-01

Self-assembled InAs quantum dots (SAQDs) were grown on InP by metalorganic chemical vapor deposition. The amount of excess InAs and the aspect ratio of the SAQD increased with temperature and V/III ratio. It is explained that the As/P exchange reaction at the surface played an important role in the kinetics of SAQD formation. Insertion of a lattice-matched InGaAs buffer layer suppressed the excess InAs formation, and lowered the aspect ratio. Moreover, the dots formed on InGaAs buffer layers were faceted, whereas those on InP were hemispherical, confirming the effect of the As/P exchange reaction. The shape of InAs quantum dots on InGaAs buffer layers was a truncated pyramid with four [136] facets and base edges parallel to directions.

Electrochemical growth of Co nanowires in ultra-high aspect ratio InP membranes: FFT-impedance spectroscopy of the growth process and magnetic properties.

Science.gov (United States)

Gerngross, Mark-Daniel; Carstensen, Jürgen; Föll, Helmut

2014-01-01

The electrochemical growth of Co nanowires in ultra-high aspect ratio InP membranes has been investigated by fast Fourier transform-impedance spectroscopy (FFT-IS) in the frequency range from 75 Hz to 18.5 kHz. The impedance data could be fitted very well using an electric circuit equivalent model with a series resistance connected in series to a simple resistor-capacitor (RC) element and a Maxwell element. Based on the impedance data, the Co deposition in ultra-high aspect ratio InP membranes can be divided into two different Co deposition processes. The corresponding share of each process on the overall Co deposition can be determined directly from the transfer resistances of the two processes. The impedance data clearly show the beneficial impact of boric acid on the Co deposition and also indicate a diffusion limitation of boric acid in ultra-high aspect ratio InP membranes. The grown Co nanowires are polycrystalline with a very small grain size. They show a narrow hysteresis loop with a preferential orientation of the easy magnetization direction along the long nanowire axis due to the arising shape anisotropy of the Co nanowires.

Impacts from electric railway operation on the power supply system characteristic; Einfluss des elektrischen Bahnbetriebs auf das Tagesbelastungsdiagramm der Energieversorgung

Energy Technology Data Exchange (ETDEWEB)

Bogdanov, C. [Militaerhochschule fuer Verkehr ``Todor Kableshkov``, Sofia (Bulgaria)

1995-12-31

Some characteristic figures are derived from daily load diagrams of electric railways, analized and compared with those of public power supply load diagram, especially with regard to sharing in base - medium - peak load and in day - night times, and optimizations are proposed. (orig.) [Deutsch] Fuer die Tagesbelastungsdiagramme elektrischer Bahnen werden einige Kennziffern gebildet, analysiert und mit denen des Tagesbelastungsdiagramms der Landesenergieversorgung verglichen, insbesondere hinsichtlich der Verteilung des Bahnenergiebedarfs auf Grund-, Mittel- und Spitzenlast sowie auf die verschiedenen Tages- und Nachtzeitzonen. Daraus werden Optimierungsvorschlaege abgeleitet. (orig.)

Low conversion loss 94 GHz and 188 GHz doublers in InP DHBT technology

DEFF Research Database (Denmark)

Zhurbenko, Vitaliy; Johansen, Tom Keinicke; Squartecchia, Michele

2017-01-01

An Indium Phosphide (InP) Double Heterojunction Bipolar Transistor (DHBT) process has been utilized to design two doublers to cover the 94 GHz and 188 GHz bands. The 94 GHz doubler employs 4-finger DHBTs and provides conversion loss of 2 dB. A maximum output power of nearly 3 dBm is measured whil...... operate over a broad bandwidth. The total circuit area of each chip is 1.41 mm2....

LETTER TO THE EDITOR: Surface passivation of (100) InP by organic thiols and polyimide as characterized by steady-state photoluminescence

Science.gov (United States)

Schvartzman, M.; Sidorov, V.; Ritter, D.; Paz, Y.

2001-10-01

A method for the passivation of indium phosphide, based on thiolated organic self-assembled monolayers (SAMs) that form highly ordered, close-packed structures on the semiconductor surface, is presented. It is shown that the intensity of steady-state photoluminescence (PL) of n-type InP wafers covered with the thiolated SAMs increases significantly (as much as 14-fold) upon their covering with the monolayers. The ease with which one can tailor the outer functional groups of the SAMs provides a way to connect this new class of passivators with standard encapsulators, such as polyimide. Indeed, the PL intensity of SAM-coated InP wafers was not altered upon their overcoating with polyimide, despite the high curing temperature of the polymer (200 °C).

Opportunities for co-fermentation of residual products at sewage treatment plant; Moeglichkeiten der Co-Vergaerung von Reststoffen auf Klaeranlagen

Energy Technology Data Exchange (ETDEWEB)

Wolter, C.; Rolin, P. [Weber-Ingenieure (Germany); Grothkopp, H. [Linde-KCA-Dresden GmbH (Germany)

1999-07-01

At the Radeberg sewage treatment plant of the local administration union (AZV) 'Obere Roeder', the first entirely joint co-fermentation facility for sewage sludge, organic waste and organic trade waste to have been erected in all Germany went operative. Expected turnover rates and gas yields of the fermentation plant could be attained subject to the concentrations of materials processed during the start-up phase. The advantages of co-fermentation at sewage treatment plant lie in the perfect matching of sewage treatment and sludge digestion on the one hand with organic waste fermentation on the other hand, so that the respective advantages complement each other while the disadvantages are balanced out by the combination. In terms of environmentally compatible, sustainable processing of organic waste and production residues, co-fermentation at sewage treatment plant represents a convenient and economical solution. (orig.) [German] Auf der Klaeranlage des AZV 'Obere Roeder' in Radeberg ist zum ersten Mal in Deutschland eine vollstaendig gemeinsame Covergaerung von Klaerschlamm, Bioabfaellen und gewerblichen organischen Reststoffen in Betrieb gegangen. Erwartete Umsatzleistungen und Gasausbeuten der Vergaerungsanlage konnten entsprechend der erzielten Stoffkonzentrationen in der Inbetriebnahmephase erreicht werden. Die Vorteile der Covergaerung auf Klaeranlagen liegen in der perfekten Abstimmung zwischen Klaeranlage und Klaerschlammfaulung einerseits und der Vergaerung von Bioabfaellen andererseits, so dass sich die Vorteile der jeweiligen Verfahren ergaenzen, bzw. sich die Nachteile durch die Kombination beider Verfahren aufheben. Im Hinblick auf oekologische, nachhaltige Verwertung organischer Abfaelle und Produktionsreststoffe bietet die Covergaerung auf Klaeranlagen eine sinnvolle, sich auch wirtschaftlich rechnende Loesung. (orig.)

Pediatric radiological diagnostics in suspected child abuse; Kinderradiologische Diagnostik bei Verdacht auf Kindesmisshandlung

Energy Technology Data Exchange (ETDEWEB)

Erfurt, C.; Schmidt, U. [Technische Universitaet Dresden, Institut fuer Rechtsmedizin, Medizinische Fakultaet, Dresden (Germany); Hahn, G. [Universitaetsklinikum Carl Gustav Carus, Dresden, Abteilung Kinderradiologie, Institut und Poliklinik fuer Radiologische Diagnostik, Dresden (Germany); Roesner, D. [Universitaetsklinikum Carl Gustav Carus, Dresden, Klinik und Poliklinik fuer Kinderchirurgie, Dresden (Germany)

2009-10-15

Advanced and specialized radiological diagnostics are essential in the case of clinical suspicion of pediatric injuries to the head, thorax, abdomen, and extremities when there is no case history or when ''battered child syndrome'' is assumed on the basis of inadequate trauma. In particular, the aim of this sophisticated diagnostic procedure is the detection of lesions of the central nervous system (CNS) in order to initiate prompt medical treatment. If diagnostic imaging shows typical findings of child abuse, accurate documented evidence of the diagnostic results is required to prevent further endangerment of the child's welfare. (orig.) [German] Klinisch diagnostizierte Verletzungen an Kopf, Thorax, Abdomen oder Extremitaeten eines Kindes bei scheinbar leerer Anamnese oder Angabe eines inadaequaten Traumas erfordern beim Verdacht auf ein Battered-Child-Syndrom eine erweiterte und spezialisierte radiologische Diagnostik. Diese soll insbesondere im Bereich des ZNS Verletzungsfolgen erfassen, um therapeutische Massnahmen einleiten zu koennen. Bei typischen, auf eine Misshandlung hinweisenden radiologischen Befunden ist eine praezise beweissichere Befunddokumentation erforderlich, um eine weitere Kindeswohlgefaehrdung zu vermeiden. (orig.)

Emotionalitätsmarker in Kommentaren auf der PEGIDA-Facebook-Seite

OpenAIRE

Hintze, Sonja

2015-01-01

Das Thema Zuwanderung löst in der Bevölkerung eine Reihe von unterschiedlichen Emotionen aus. Eine politische Bewegung, die unter anderem aufgrund ihrer ablehnenden Haltung gegenüber Zuwanderung in den Medien sehr präsent ist, ist PEGIDA (Patriotischen Europäer gegen die Islamisierung des Abendlandes). PEGIDA ist wie aus dem Nichts im Oktober 2014 in Dresden auf der politischen Bildfläche erschienen und gewann schnell an Zuwachs. Nach einem kurzen Einbruch der Anhängerzahlen nimmt die Zahl de...

Recent developments in the electricity generation market in 2014; Aktuelle Entwicklungen auf dem Stromerzeugungsmarkt im Jahr 2014

Energy Technology Data Exchange (ETDEWEB)

Hofmann, Holger [Oppenhoff und Partner Rechtsanwaelte Steuerberater mbB, Koeln (Germany)

2015-02-16

Following up the report on the developments in the Electricity market from last year to this case this article shall give an overview of the current developments in 2014. The year 2014 was marked by the energy sector Program of the coalition agreement, which, under the three objectives of security of supply Affordability and environmental impact which has made clear Specifications for the production side in particular with regard to the final Nuclear Phase-out phase, the announced amendment of the EEG, system stability and also Fracking. The predominant theme in 2014 this was certainly the reform of the EEG and around it rambling topics on European level. Too much uncertainty with plant operators, investors and companies in German power generation market, has led in addition to the mentioned legislative package the revision of the EU environmental and energy aid guidelines, State aid procedure of the European Commission regarding the German promotion of electricity from renewable Energy and the process in the case of Aaland Vindkraft before the ECJ. The dynamics on the generation side, inter alia through the increased connection of decentralized generation plants, result in an increasing regulation in power generation. Finally a first bill for Fracking is published at the end of 2014. [German] Anknuepfend an den Bericht ueber die Entwicklungen auf dem Stromerzeugungsmarkt aus dem letzten Jahr soll dieser Beitrag einen Ueberblick ueber die aktuellen Entwicklungen in 2014 geben. Das Jahr 2014 war gepraegt von dem energiewirtschaftlichen Programm des Koalitionsvertrags, das unter dem Zieldreieck aus Versorgungssicherheit, Preisguenstigkeit und Umweltvertraeglichkeit klare Vorgaben fuer die Erzeugerseite vor allem mit Blick auf den endgueltigen Atomausstieg, die angekuendigte Novellierung des EEG, Systemstabilitaet und auch Fracking gemacht hat. Das vorherrschende Thema im Jahr 2014 war hierbei sicherlich die Reform des EEG sowie die sich darum rankenden Themen auf

Die Auswirkungen von Corporate Social Responsibility und Organisationsstolz auf Mitarbeiter im Kundenkontakt

OpenAIRE

Rhein, Miriam Katharina

2012-01-01

Corporate Social Responsibility (CSR) leistet nicht nur einen Beitrag zum Wohle verschiedener Stakeholdergruppen, sondern kann sich über die Wahrnehmungen der Mitarbeiter positiv auf den Unternehmenserfolg auswirken. Es kann angenommen werden, dass eine von den Mitarbeitern als glaubwürdig wahrgenommene CSR das Potenzial besitzt, kurzfristige, äußerst intensive positive emotionale sowie längerfristig anhaltende einstellungsbezogene Reaktionen hervorzurufen und dadurch relevante Verhaltensweis...

ODMR of shallow donors in Zn-doped LEC-grown InP

International Nuclear Information System (INIS)

Trombetta, J.M.; Kennedy, T.A.

1990-01-01

ODMR spectra observed while monitoring the shallow donor-shallow acceptor pair emission in Zn-doped LEC-grown InP display strong features in the region near the conduction electron value of g = 1.20. In addition to a previously observed narrow line, the authors observe a much broader resonance which dominates at low photoexcitation intensity. This broader line is interpreted as the unresolved exchange split resonances of electrons bound to residual shallow donors. The exchange broadening arises from interaction with nearby paramagnetic centers. Both resonances result in a decrease in the shallow-donor-to shallow-acceptor radiative recombination and give evidence for pair recombination processes which compete with this emission

Defect reactions on the phosphorus sublattice in low-temperature electron-irradiated InP

International Nuclear Information System (INIS)

Sibille, A.; Suski, J.

1985-01-01

This Rapid Communication describes several thermally or electronically stimulated defect reactions involving the dominant deep centers in low-temperature (25--300 K) electron-irradiated InP. Some of these reactions result in an increased concentration of the centers, thereby revealing the existence of a secondary production mechanism of the related defects. Low-energy irradiations allows one to select the type of the ejected atom (P) and gives direct evidence that only a phosphorus species, interstitial or vacancy, is involved in the creation-reaction-annealing events

Influence of Yb AND Yb2O3 addition on the properties of InP layers

Czech Academy of Sciences Publication Activity Database

Procházková, Olga; Grym, Jan; Zavadil, Jiří; Žďánský, Karel; Lorinčík, Jan

2008-01-01

Roč. 10, č. 12 (2008), s. 3261-3264 ISSN 1454-4164 R&D Projects: GA ČR GA102/06/0153; GA ČR(CZ) GP102/08/P617 Institutional research plan: CEZ:AV0Z20670512 Keywords : semiconductor technology * rare earth elements * InP Subject RIV: JA - Electronics ; Optoelectronics, Electrical Engineering Impact factor: 0.577, year: 2008

Plasma Deposited SiO2 for Planar Self-Aligned Gate Metal-Insulator-Semiconductor Field Effect Transistors on Semi-Insulating InP

Science.gov (United States)

Tabory, Charles N.; Young, Paul G.; Smith, Edwyn D.; Alterovitz, Samuel A.

1994-01-01

Metal-insulator-semiconductor (MIS) field effect transistors were fabricated on InP substrates using a planar self-aligned gate process. A 700-1000 A gate insulator of Si02 doped with phosphorus was deposited by a direct plasma enhanced chemical vapor deposition at 400 mTorr, 275 C, 5 W, and power density of 8.5 MW/sq cm. High frequency capacitance-voltage measurements were taken on MIS capacitors which have been subjected to a 700 C anneal and an interface state density of lxl0(exp 11)/eV/cq cm was found. Current-voltage measurements of the capacitors show a breakdown voltage of 107 V/cm and a insulator resistivity of 10(exp 14) omega cm. Transistors were fabricated on semi-insulating InP using a standard planar self-aligned gate process in which the gate insulator was subjected to an ion implantation activation anneal of 700 C. MIS field effect transistors gave a maximum extrinsic transconductance of 23 mS/mm for a gate length of 3 microns. The drain current drift saturated at 87.5% of the initial current, while reaching to within 1% of the saturated value after only 1x10(exp 3). This is the first reported viable planar InP self-aligned gate transistor process reported to date.

Ex-Situ and In-Situ Ellipsometric Studies of the Thermal Oxide on InP

Science.gov (United States)

1990-12-06

ion---- Distribution/ Availabilit ? Codes£v l llt Codes Avail and/or Dist| Special Abstract The thermally grown InP oxide as etched by an aqueous...aqueous NH4OH/NH4F, and Law(17) has reported observations of orientational ordering of water and organic solvents on pyrex surfaces by in-situ...minutes, followed by a sequence of acetone, deionized water (d. i. water ) rinse. After being dipped in a concentrated aqueous HF solution for 15 seconds

Zwei Briefe auf Guaraní in Alexander von Humboldts Handschrift

Directory of Open Access Journals (Sweden)

Manfred Ringmacher

2014-12-01

Full Text Available Gegenstand des Aufsatzes von Manfred Ringmacher sind zwei Briefe auf Guaraní in Alexander von Humboldts Handschrift. Die Originale der Abschriften wurden im Jahr 1800 in der ehemals jesuitisch betreuten Indianersiedlung Santa María la Mayor am Río Uruguay geschrieben und an den Vizekönig des spanischen Vizekönigreichs La Plata gesandt. Sie sind mit einer zeitgenössischen spanischen Übersetzung versehen; außerdem hat Alexander von Humboldt in französischer Sprache noch einige Erläuterungen gegeben.

Origin of the main deep electron trap in electron irradiated InP

International Nuclear Information System (INIS)

Sibille, A.

1986-01-01

The electrical activity and annealing behavior of the main electron trap in electron irradiated InP p + n junctions has been investigated. A very marked depth dependence of the annealing rate has been found. Moreover, this center apparently acts as if it were a deep donor, leading to an increase of carrier concentration on the n side. All these results are coherently interpreted with a model in terms of radiation defect D(P) (phosphorus interstitial or vacancy), residual shallow acceptor complexing, the final annealing resulting from a dissociation of the complex followed by a diffusion and either recapture or annihilation of D(P)

Development of solar selective absorber layers on aluminium. Final report; Entwicklung solarselektiver Absorberschichten auf Aluminium fuer Solarkollektoren. Abschlussbericht

Energy Technology Data Exchange (ETDEWEB)

Hoenicke, D.; Moeller, T.; Schwarz, T.

1998-01-31

A new electrolytic process was developed to form solar selective layers on aluminium. In the developed process, both the formation of the alumina layer and the deposition of metals into the layer takes place in only one treatment step using a single electrolysis bath. The main step of the so called ISOC-method (impulse structured oxide ceramic) is the anodic oxidation of aluminium which was carried out by using a pulse technique at different voltages. During the anodic polarisation a thin alumina ceramic layer was formed, while the cathodic led to the metal deposition as copper and nickel. The conditions of the electrolysis were varied in order to estimate optimal parameters achieving solar selective layers with high selectivity. Furthermore, a scale-up of the lab scale apparatus to a mini plant was carried out. Finally, the corrosion resistance of the absorber layers was improved by the formation of a thin hydrophobic overlayer using a sol-gel treatment. (orig.) [Deutsch] Ein neuartiges Behandlungsverfahren zur Erzeugung von solarselektiven Absorberschichten auf Aluminium wurde entwickelt. Bei dieser elektrochemischen Behandlung wird in einem Einstufenprozess mit einem Elektrolyten durch eine Kombination von anodischer Oxidation und bipolarer Pulsbehandlung auf der Oberflaeche des Aluminiums eine impulsstrukturierte Oxidkeramik (ISOK) erzeugt. Dabei entsteht durch eine anodische Oxidation eine strukturierte Aluminiumoxidschicht. Bei der bipolaren Pulsbehandlung erfolgt dann eine Abscheidung der im ISOK-Elektrolyten befindlichen Metalle Cu und Ni auf oder in die Aluminiumoxidoberflaeche. Die ISOK-Behandlung wurde vom Labormassstab zu einem ISOK-Verfahren im Miniplant-Massstab entwickelt. Der Einfluss der elektrischen Parameter und der chemischen Zusammensetzung der ISOK-Elektrolyte wurde untersucht. Durch eine auf das ISOK-Verfahren abgestimmte Nachbehandlung, ein Tauchverfahren in einer Sol-Gel-Loesung, entsteht ein Schichtsystem mit hoher Solarselektivitaet

Physikalische Grundlagen von chemischen Raman-Sensoren mit Schwerpunkt auf faseroptischen SERS-Sonden

OpenAIRE

Viets, Carmen

2001-01-01

Faseroptische SERS-Sensoren wurden durch die Beschichtung der Endflächen von optischen Fasern mit rauhen Metallfilmen erzeugt. Zu den verschiedenen Präparationstechniken, die angewendet und verglichen wurden, gehörten das langsame Aufdampfen von Metall-Inselfilmen und das Bedampfen von Nanopartikeln, aufgerauhten oder elektronenlithographisch strukturierten Oberflächen mit Metallfilmen. Der Einfluß der Laserleistung auf die Messungen mit SERS-Sensoren wurde untersucht, und es wurden maximale ...

Fe-contacts on InAs(100) and InP(100) characterised by conversion electron Mössbauer spectroscopy

DEFF Research Database (Denmark)

Damsgaard, Christian Danvad; Gunnlaugsson, H.P; Weyer, G.

2005-01-01

We have grown 4 nm thin films of Fe-57 on InAs(100) and InP(100) surfaces by use of MBE and studied the samples by Fe-57 conversion electron Mossbauer spectroscopy. In the case of InAs, the Mossbauer spectrum showed a sextet due to alpha-Fe and a further magnetically split component with slightly...

Bi-functional Au/FeS (Au/Co{sub 3}O{sub 4}) composite for in situ SERS monitoring and degradation of organic pollutants

Energy Technology Data Exchange (ETDEWEB)

Ma, Shuzhen; Cai, Qian; Lu, Kailing; Liao, Fan, E-mail: fliao@suda.edu.cn; Shao, Mingwang, E-mail: mwshao@suda.edu.cn [Institute of Functional Nano & Soft Materials (FUNSOM), Jiangsu Key Laboratory for Carbon-Based Functional Materials and Devices & Collaborative Innovation Center of Suzhou Nano Science and Technology, Soochow University (China)

2016-01-15

The bi-functional Au/FeS (Au/Co{sub 3}O{sub 4}) composite was fabricated by in situ reducing Au nanoparticles onto the surface of FeS (Co{sub 3}O{sub 4}). The as-prepared FeS possessed a multi-structure composed of plenty of nanoplates, which were coated by Au nanoparticles with an average size of ∼47.5 nm. While the Co{sub 3}O{sub 4} showed a thin hexagonal sheet containing Au nanoparticles on its surface with an average size of ∼79.0 nm. Both the as-prepared Au/FeS and Au/Co{sub 3}O{sub 4} composites exhibited excellent SERS performance, capable of enhancing the Raman signals of R6G molecules with the enhancement factor up to 1.81 × 10{sup 6} and 7.60 × 10{sup 4}, respectively. Moreover, Au/FeS (Au/Co{sub 3}O{sub 4}) composite also has been verified to have intrinsic peroxidase-like activity, which could decompose H{sub 2}O{sub 2} into hydroxyl radicals and then degrade organic pollutants into small molecules. Therefore, SERS can be used to real-time and in situ monitoring the degradation process of R6G molecules, employing the Au/FeS (Au/Co{sub 3}O{sub 4}) composite both as SERS substrate and catalyst. Graphical abstract: SERS was used to real-time and in situ monitoring the degradation of R6G, employing the Au/FeS and Au/Co{sub 3}O{sub 4} composites both as SERS substrates and catalysts.

[Auf Wache für die Nation : Erinnerungen der Weltkriegsagent Juozas Gabrys berichtet (1911-1918)] / Mart Kuldkepp

Index Scriptorium Estoniae

Kuldkepp, Mart, 1983-

2015-01-01

Arvustus: Auf Wache für die Nation : Erinnerungen der Weltkriegsagent Juozas Gabrys berichtet (1911-1918). Hrsg. von Eberhard Demm und Christina Nikolajew. Verlag Peter Land. Frankfurt am Main u.a. 2013

MIMIC-compatible GaAs and InP field effect controlled transferred electron (FECTED) oscillators

Science.gov (United States)

Scheiber, Helmut; Luebke, Kurt; Diskus, Christian G.; Thim, Hartwig W.; Gruetzmacher, D.

1989-12-01

A MIMIC-(millimeter and microwave integrated circuit) compatible transferred electron oscillator is investigated which utilizes the frequency-independent negative resistance of the stationary charge dipole domain that forms in the channel of a MESFET. The device structure, analysis, and simulation are described. Devices fabricated from GaAs and InP exhibit very high power levels of 56 mW at 29 GHz and 55 mW at 34 GHz, respectively. Continuous wave power levels are somewhat lower (30 mW).

Wavelength Conversion of a 9.35-Gb/s RZ OOK Signal in an InP Photonic Crystal Nanocavity

DEFF Research Database (Denmark)

Vukovic, Dragana; Yu, Yi; Heuck, Mikkel

2014-01-01

Wavelength conversion of a 10-Gb/s (9.35 Gb/s net rate) return-to-zero ON-OFF keying signal is demonstrated using a simple InP photonic crystal H0 nanocavity with Lorentzian line shape. The shifting of the resonance induced by the generation of free-carriers enables the pump intensity modulation...

Lassen Veränderungen des Prostata-spezifischen Antigen- (PSA- Spiegels nach Prostatastanzbiopsie Rückschlüsse auf das pathologische Ergebnis zu?

Directory of Open Access Journals (Sweden)

Volkmer BG

2004-01-01

Full Text Available Einleitung: Die diagnostische Biopsie der Prostata führt bekanntermaßen zum Anstieg des Serum-PSA-Spiegels. Diese prospektive Untersuchung sollte die Frage klären, ob die Änderungen des Serum-PSA-Spiegels nach Stanzbiopsie Rückschlüsse auf das histologische Ergebnis zulassen und so als Entscheidungshilfe bei der Frage der Rebiopsie dienen können. Patienten und Methoden: Insgesamt 79 konsekutive Patienten mit klinischem Verdacht auf das Vorliegen eines Prostatakarzinoms (PCA und einem Gesamt-PSA 50 ng/ml wurden in die Studie eingeschlossen. Ausschlußkriterien waren klinische Hinweise für eine Prostatitis und Prostatabiopsie innerhalb der letzten 3 Monate. Die Serum-PSA-Werte wurden mit einem ultrasensitiven Enzymimmunoassay bestimmt. Die Bestimmung des Gesamt-PSA und des freien PSA im Serum erfolgte unmittelbar vor und 60 Minuten nach der Biopsie. Die Spiegel des Gesamt-PSA und freien PSA, sowie die f/t-PSA-Ratio vor und nach Biopsie wurden in Korrelation zum histologischen Ergebnis gesetzt. Ergebnisse: 86 Biopsieserien wurden bei 79 Patienten durchgeführt. 38 Biopsieserien diagnostizierten ein PCA, 48 eine benigne Prostatahyperplasie (BPH. Die abschließende Histologie nach wiederholter Biopsie war PCA und BPH in je 43 Fällen. Insgesamt fand sich ein Anstieg des durchschnittlichen Gesamt-PSA von 18,39 ng/ml auf 107,8 ng/ml, des durchschnittlichen freien PSA von 3,43 ng/ml auf 33,7 ng/ml und der durchschnittlichen f/t PSA-Ratio von 18,1 % auf 52,0 %. Es fand sich keine Korrelation zwischen dem Anstieg dieser Parameter und der Anzahl der Biopsiezylinder (4–51. Bezüglich des histologischen Befundes ergaben sich statistisch signifikante Unterschiede für das Gesamt-PSA vor und die f/t PSA-Ratio vor und nach Stanzbiopsie. Schlußfolgerung: Die Analyse der PSA-Parameter nach Stanzbiopsie bietet keine zusätzliche Information über die konventionellen PSA-Parameter vor der Biopsie hinaus. Sie korrelieren vor allem nicht mit falsch

Applications of cerebral MRI in neonatology; MRT bei Neugeborenen mit Verdacht auf zerebrale Stoerung

Energy Technology Data Exchange (ETDEWEB)

Prayer, D. [Universitaetsklinik fuer Radiodiagnostik, Wien (Austria). Abt. fuer Neuroradiologie; Kuhle, S. [Universitaetsklinik fuer Kinder- und Jugendheilkunde, Wien (Austria). Abt. fuer Neonatologie, angeborene Stoerungen und Intensivmedizin; Blaicher, W. [Abt. fuer Frauenheilkunde und Praenatale Diagnostik, Wien (Germany)

2000-01-01

Magnetic resonance tomography (MRT) has become the most important method in the workup of infantile cerebral complications after primary sonography. Cerebral MR examination and image interpretation during the infantile period require extensive knowledge of morphological manifestations, their pathophysiological background, and frequency. The choice of imaging parameters and image interpretation is demonstrated in infarctions and hemorrhages of the mature and immature brain. A review of the main differential diagnoses is also given. The relevance of MR spectroscopy and fetal MRI is discussed. (orig.) [German] Zur Abklaerung zerebraler Veraenderungen bei Neugeborenen hat sich die Magnetresonanztomographie (MRT) als wichtigste weiterfuehrende Methode nach der Sonographie entwickelt. Die Durchfuehrung und Auswertung der MR-Untersuchungen erfordern jedoch eine genaue Kenntnis der morphologischen Manifestation, des pathophysiologischen Hintergrunds und der Haeufigkeit bestimmter zerebraler Komplikationen in diesem Lebensalter. Resuemee: Ausgehend von zerebrovaskulaeren Erkrankungen werden diese Fragen behandelt, wobei sowohl auf die Auswahl der adaequaten Untersuchungsparameter als auch auf die Bildinterpretation und die wichtigsten Differentialdiagnosen eingegangen wird. Die Bedeutung von MR-Spektroskopie und fetaler MRT wird diskutiert. (orig.)

Hoffen auf den guten Willen – von der unverbindlichen Institutionalisierung feministischer Forderungen

Directory of Open Access Journals (Sweden)

Maike Bußmann

2008-11-01

Full Text Available Nachdem die Protagonistinnen der ersten Frauenbewegung prinzipiell den Zugang in die Institutionen erstritten hatten, wurde seit den 1968ern der Marsch durch die Institutionen angetreten. Diesen untersucht Stefanie Ehmsen für die Vereinigten Staaten und die Bundesrepublik, wobei sie die Unterschiede als Resultat der jeweiligen politischen Traditionen interpretiert. Zwar wartet sie mit gut recherchierten und lesenswerten Fallbeispielen auf, doch das Potential der Analyse wird leider nicht ausgeschöpft.

Evolution of ordered one-dimensional and two-dimensional InAs/InP quantum dot arrays on patterned InP (1 0 0) and (3 1 1)B substrates by self-organized anisotropic strain engineering

NARCIS (Netherlands)

Sritirawisarn, N.; Wera, J.L.E.; Otten, van F.W.M.; Nötzel, R.

2010-01-01

The formation of ordered InAs/InP quantum dot (QD) arrays is demonstrated on patterned InP (1 0 0) and (3 1 1)B substrates by the concept of self-organized anisotropic strain engineering in chemical beam epitaxy (CBE). On shallow- and deep stripe-patterned InP (1 0 0) substrates, depending on the

Room-temperature particle detectors with guard rings based on semi-insulating InP co-doped with Ti and Zn

Czech Academy of Sciences Publication Activity Database

Yatskiv, Roman; Žďánský, Karel; Pekárek, Ladislav

2009-01-01

Roč. 598, č. 3 (2009), s. 759-763 ISSN 0168-9002 R&D Projects: GA AV ČR KAN400670651 Institutional research plan: CEZ:AV0Z20670512 Keywords : radiation detector * InP * crystal growth Subject RIV: JA - Electronics ; Optoelectronics, Electrical Engineering Impact factor: 1.317, year: 2009

Stability investigation for InP DHBT mm‐wave power amplifier

DEFF Research Database (Denmark)

Yan, Lei; Johansen, Tom Keinicke; Kammersgaard, Jacob

2013-01-01

microwave integrated circuit power amplifier. Experimental results from a redesigned power amplifier with improved stability are presented to confirm that the previously detected oscillation loop is removed using odd‐mode stabilization resistors with the correct choice of values and locations. © 2012 Wiley......In this article, we discuss stability issues for mm‐wave monolithic integrated power amplifiers using InP double heterojunction bipolar transistor (DHBT) technology targeting E‐band applications at 71–76 GHz and 81–86 GHz. Different stability detection methods based on the classical two‐port K......‐Δs pair, linear three‐port graphical analysis, system identifications, circuit modal analysis, and normalized determinant function are all reviewed. The corresponding techniques are employed to predict the occurrence of instability at 15 GHz observed during measurements on a fabricated monolithic...

Experimental studies on the surface confined quiescent plasma at INPE

International Nuclear Information System (INIS)

Ferreira, J.L.; Ferreira, J.G.; Sandonato, G.M.; Alves, M.V.; Ludwig, G.O.; Montes, A.

1988-01-01

The quiescent plasma machines used in several experiments at the Associated Plasma Laboratory in INPE are presented. The research activities comprise particle simulation studies on ion acoustic double layers, and studies on the plasma production and loss in surface confined magnetic multidipole thermionic discharges. Recent results from these studies have shown a non-maxwellian plasma formed in most of the discharge conditions. The plasma leakage through the multidipole fields shows an anomalous diffusion process driven by ion acoustic turbulence in the magnetic sheath. The information derived from these studies are being used in the construction and characterization of ion sources for shallow ion implantation in semiconductors, in ion thruster for space propulsion and in the development of powerful ion sources for future use in neutral beam injection systems. (author) [pt

Experimental studies on the surface confined quiescent plasma at INPE

International Nuclear Information System (INIS)

Ferreira, J.L.; Ferreira, J.G.; Sandonato, G.M.; Alves, M.V.; Ludwig, G.O.; Montes, A.

1988-06-01

Quiescent plasma machines are being used in several experiments at the Associated Plasma Laboratory in INPE. The research activities comprises particle simulation studies on ion acoustic double Layers, and studies on the plasma production and loss in surface confined magnetic multidipole thermionic discharges. Recent results from these studies have shown a non-maxwellian plasma formed in most of the discharge conditions. The plasma leakage through the multidipole fields shows an anomalous diffusion process driven by ion acoustic turbulence in the magnetic sheath. The information derived from these studies are being used in the construction and characterization of ion sources for shallow ion implantation in semiconductors, in ion thruster for space propulsion and in the development of powerful ion sources for future use in neutral beam injection systems. (author) [pt

Raman investigation of lattice defects and stress induced in InP and GaN films by swift heavy ion irradiation

Energy Technology Data Exchange (ETDEWEB)

Hu, P.P. [Institute of Modern Physics, Chinese Academy of Sciences (CAS), Lanzhou 730000 (China); University of Chinese Academy of Sciences (UCAS), Beijing 100049 (China); Liu, J., E-mail: J.Liu@impcas.ac.cn [Institute of Modern Physics, Chinese Academy of Sciences (CAS), Lanzhou 730000 (China); Zhang, S.X. [Institute of Modern Physics, Chinese Academy of Sciences (CAS), Lanzhou 730000 (China); University of Chinese Academy of Sciences (UCAS), Beijing 100049 (China); Maaz, K. [Institute of Modern Physics, Chinese Academy of Sciences (CAS), Lanzhou 730000 (China); Nanomaterials Research Group, Physics Division, PINSTECH, Nilore, 45650 Islamabad (Pakistan); Zeng, J. [Institute of Modern Physics, Chinese Academy of Sciences (CAS), Lanzhou 730000 (China); Guo, H. [Institute of Modern Physics, Chinese Academy of Sciences (CAS), Lanzhou 730000 (China); University of Chinese Academy of Sciences (UCAS), Beijing 100049 (China); Zhai, P.F.; Duan, J.L.; Sun, Y.M.; Hou, M.D. [Institute of Modern Physics, Chinese Academy of Sciences (CAS), Lanzhou 730000 (China)

2016-04-01

InP crystals and GaN films were irradiated by swift heavy ions {sup 86}Kr and {sup 209}Bi with kinetic energies of 25 and 9.5 MeV per nucleon and ion fluence in the range 5 × 10{sup 10} to 3.6 × 10{sup 12} ions/cm{sup 2}. The characteristic optical bands were studied by Raman spectroscopy to reveal the disorder and defects induced in the samples during the irradiation process. The crystallinity of InP and GaN was found to be deteriorated after irradiation by the swift heavy ions and resulted in the amorphous nature of the samples along the ion tracks. The amorphous tracks observed by transmission electron microscopy (TEM) images confirmed the formation of lattice defects. In typical F{sub 2}(LO) mode, in case of InP, the spectra shifted towards the lower wavenumbers with a maximum shift of 7.6 cm{sup −1} induced by 1030 MeV Bi ion irradiation. While in case of GaN, the typical E{sub 2}(high) mode shifted towards the higher wavenumbers, with maximum shift of 5.4 cm{sup −1} induced by 760 MeV Bi ion irradiation at ion fluence of 1 × 10{sup 12} ions/cm{sup 2}. The observed Raman shifts reveal the presence of lattice defects and disorder induced in the samples after irradiation by the swift heavy ions. This irradiation also generated lattice stress in the samples, which has been investigated and discussed in detail in this work.

Nitrogen emissions during pyrolysis and combustion; Einfluesse auf die Stickstofffreisetzung bei der Pyrolyse und Verbrennung

Energy Technology Data Exchange (ETDEWEB)

Koepsel, R F; Friebel, J; Halang, S [Technische Univ. Bergakademie Freiberg (Germany). Inst. IEC

1998-09-01

Reduction of nitric oxide emissions during brown coal combustion is an important contribution to clean utilisation of this very important domestic primary energy source. In modern processes, the nitrogen contained in the fuels is the main source of oxides. The distribution of this nitrogen in the products can be influenced by modifying the degassing parameters especially in the first phase of combustion, i.e. pyrolysis. The heat-up rate, pressure, as well as the genesis and mineral content of the coal were found to be the main influencing paramters. Depending on the fuel characteristics (degree of coalification, concentration of volatile matter, ash composition), the nitrogen released during pyrolysis and the nitrogen retained in the solid residue contribute to the total emissions of nitric oxides in different degrees. (orig.) [Deutsch] Die Verminderung der Stickoxidemission bei der Verbrennung von Braunkohle stellt einen wichtigen Beitrag zur sauberen Verwertung dieses bedeutendsten einheimischen Primaerenergietraegers dar. In modernen Prozessen bildet dabei der im Brennstoff gebundene Stickstoff die Hauptquelle der Oxide. Insbesondere durch Einflussnahme auf die Entgasungsbedingungen waehrend der ersten Phase der Verbrennung - der Pyrolyse - kann die Verteilung dieses Stickstoffes auf die Produkte beeinflusst werden. Als wesentliche Einflussgroessen auf die Einbindung in den verbleibenden Koks und die Freisetzung fluechtiger N-haltiger Gase (HCN, NH{sub 3}) wurden die Aufheizgeschwindigkeit, der Druck und die Mineralsubstanz der Kohle gefunden. Eine wesentliche Einflussgroesse stellt daneben auch die Herkunft der Kohlen dar. In Abhaengigkeit von den Brennstoffeigenschaften (Inkohlungsgrad, Gehalt an fluechtigen Bestandteilen, Aschezusammensetzung) tragen der waehrend der Pyrolyse freigesetzte und der im festen Rueckstand verbleibende Stickstoff in unterschiedlichem Masse zur Gesamtemission an Stickoxiden bei. (orig.)

Bulk and interface defects in electron irradiated InP

International Nuclear Information System (INIS)

Peng Chen; Sun Heng-hui

1989-01-01

Systematic studies on the structure of defects in InP caused by electron irradiation are conducted based on experimental measurements and theoretical calculations. The rates of introduction and annealing-out temperatures of In and P vancancies are estimated using proper theoretical models. These calculations reveal that after room temperature irradiation only complexes may exist. It is also supported by our experimental data that the sum of introducing rates of three detected levels are less than the theoretical value calculated for single vacancies. According to our equation on the relation between interface states and DLTS signal and from the results of computer calculation we believe that the broad peak appearing in the DLTS diagram before irradiation is related to interface states. Its disappearance after electron irradiation suggests the reduction of interface states; this is further confirmed by the reduction of surface recombination rate derived from the results of surface photovoltage measurement

Characterization of an anion antisite defect as a deep double donor in InP

International Nuclear Information System (INIS)

Ando, K.; Katsui, A.; Jeon, D.Y.; Watkins, G.D.; Gislason, H.P.

1989-01-01

A study of optically detected magnetic resonance (ODMR) on the anion antisite defect in electron irradiated InP has been made by monitoring the magnetic circular dichroism (MCD), combined with DLTS experiment. Comparison of the ODMR and DLTS results reveals that the intrinsic anion antisite defect acts as a deep double-donor in the gap. The first ionization (D o /D 1+ ) process occurs both in thermal and optical excitation as a mid-gap electron trap, detected by DLTS and DLOS experiment. (author) 12 refs., 6 figs

Growth of Self-Catalyzed InP Nanowires by Metalorganic Chemical Vapour Deposition

International Nuclear Information System (INIS)

Lv Xiao-Long; Zhang Xia; Yan Xin; Liu Xiao-Long; Cui Jian-Gong; Li Jun-Shuai; Huang Yong-Qing; Ren Xiao-Min

2012-01-01

The fabrication of self-catalyzed InP nanowires (NWs) is investigated under different growth conditions. Indium droplets induced by surface reconstruction act as nucleation sites for NW growth. Vertical standing NWs with uniform cross sections are obtained under optimized conditions. It is confirmed that the growth rate of NWs is strongly affected by the surface diffusion adatoms while contributions from the direct impingement of vapor species onto the In droplets can be negligible. The results indicate that the droplet acts as an adatom collector rather than a catalyst. Moreover, the diffusion flow rate of adatoms increases with time at the beginning of growth and stabilizes as the growth proceeds

A thermodynamic evaluation of the potential for cryptic formation of incidental Au-Fe alloy catalysts during flexible cell experimental studies of abiotic alkanogenesis during serpentinization

Science.gov (United States)

Lazar, C.

2017-12-01

The formation of abiotic alkanes via CO2 reduction during serpentinization is an important process in astrobiology and geochemistry. Aqueous alkane concentrations in natural settings are often non-equilibrated, thus motivating many experimental studies of CO2 reduction kinetics. A well-established result of such studies is the strong catalytic effect of metallic Feo on the conversion rate of CO2 to alkanes. Because alkanogenetic serpentinization experiments often feature Fe-bearing minerals contained in gold vessels, incidental metallic Feo may precipitate during an experiment as Au-Fe alloy. Such alloy may be catalytic, potentially leading to artificially rapid alkanogenesis and an overestimation of the catalytic strength of nominally nonmetallic Fe-bearing minerals, even if isotopically labeled 13C is used. To evaluate this potential for Au-Fe alloying, a thermodynamic analysis of the effect of oxygen fugacity on Au-Fe mixing has been performed at metamorphic grades relevant to experimental alkanogenesis. The results show that even relatively oxidized metal-free mineral assemblages such as the quartz-fayalite-magnetite buffer (QFM) can stably coexist with an Au-Fe alloy containing a few hundred ppm Fe. Given the strong catalytic effect of metallic Fe, any hydrocarbons generated during a hypothetical experiment containing, for example, the QFM assemblage might be catalyzed by trace Fe in an Au-Fe alloy, not by a QFM mineral. The effect is stronger for assemblages more reducing than QFM, which are notably common in serpentinites. This is a source of experimental uncertainty in reusable flexible gold cell apparatus that cannot be assessed by traditional blank experiments, which only demonstrate the effectiveness of post-run acid-cleaning procedures. A more effective approach would be the chemical analysis of a small, recoverable gold chip embedded into the experimental materials. By assuming that the experimental materials interact identically with the Au chip and

Effect of Cl2- and HBr-based inductively coupled plasma etching on InP surface composition analyzed using in situ x-ray photoelectron spectroscopy

International Nuclear Information System (INIS)

Bouchoule, S.; Vallier, L.; Patriarche, G.; Chevolleau, T.; Cardinaud, C.

2012-01-01

A Cl 2 -HBr-O 2 /Ar inductively coupled plasma (ICP) etching process has been adapted for the processing of InP-based heterostructures in a 300-mm diameter CMOS etching tool. Smooth and anisotropic InP etching is obtained at moderate etch rate (∼600 nm/min). Ex situ x-ray energy dispersive analysis of the etched sidewalls shows that the etching anisotropy is obtained through a SiO x passivation mechanism. The stoichiometry of the etched surface is analyzed in situ using angle-resolved x-ray photoelectron spectroscopy. It is observed that Cl 2 -based ICP etching results in a significantly P-rich surface. The phosphorous layer identified on the top surface is estimated to be ∼1-1.3-nm thick. On the other hand InP etching in HBr/Ar plasma results in a more stoichiometric surface. In contrast to the etched sidewalls, the etched surface is free from oxides with negligible traces of silicon. Exposure to ambient air of the samples submitted to Cl 2 -based chemistry results in the complete oxidation of the P-rich top layer. It is concluded that a post-etch treatment or a pure HBr plasma step may be necessary after Cl 2 -based ICP etching for the recovery of the InP material.

Development of scientific and technological basis for the fabrication of thin film solar cells on the basis of a-Si:H and {mu}c-Si:H using the 'hot-wire' deposition technique. Final report; Entwicklung wissenschaftlicher und technischer Grundlagen fuer die Herstellung von Duennschichtsolarzellen auf der Basis des a-Si:H und {mu}c-Si:H mit der 'Hot-Wire'-Depositionstechnik. Abschlussbericht

Energy Technology Data Exchange (ETDEWEB)

Schroeder, B.

2002-01-22

- and p-type emitters have been fabricated. After a very short development time conversion efficiencies have been obtained ({eta}{sub max} = 15.2%) which are reported for PECVD emitters. (orig.) [German] Zwei neue Anlagen zur vollstaendigen bzw. grossflaechigen Abscheidung von a-Si:H basierenden Solarzellen mit der sog. 'Hot-Wire (HW)' CVD wurden aufgebaut. Die Abscheidebedingungen fuer geeignete n- und p-dotierte a-Si:H- bzw. {mu}c-Si:H-Schichten wurden ermittelt. Weltweit wurde erstmals eine a-Si:H-pin-Zelle vollstaendig mit der HWCVD-Methode hergestellt, ein Anfangswirkungsgrad von {eta}{sub initial} = 8,9% wurde erreicht. Nach Entwicklung eines p/n-Tunnel- bzw. Rekombinationsueberganges ist es weltweit ebenfalls erstmals gelungen, pin-pin-Tandemstrukturen mit a-Si:H-Absorbern vollstaendig mit der HWCVD-Methode abzuscheiden. Nach Teilalterung wurden noch Wirkungsgrade von {eta}{approx}7% ermittelt. Generell ist die Stabilitaet der all-HWCVD-Zellen noch unbedriedigend, was auf strukturell instabile p-Schichten zurueckgefuehrt werden konnte. Erste nip-Solarzellen auf Edelstahlsubstraten wurden ebenfalls vollstaendig mit der HWCVD praepariert ({eta}{sub initial}>6%). Der Einbau von {mu}c-Si:H-Absorberschichten die mit HWCVD bzw. ECWR-PECVD hergestellt wurden, in pin-Solarzellen war bisher wenig erfolgreich. In einer Anlage zur grossflaechigen HWCVD-Abscheidung wurden a-Si:H-Schichten mit guter Qualitaet und einer Schichtdickenuniformitaet von {delta}d = {+-}2,5% hergestellt. Fuer sog. 'Huepfzellen', nur die i-Schicht wurde in der Anlage abgeschieden, wurden auch sehr uniforme Anfangswirkungsgrade {eta}{sub initial}=6,1{+-}0,2% fuer kleinflaechige Zellen auf einer Flaeche von 20 x 20 cm{sup 2} erreicht. Diese Ergebnisse koennen als 'proof of concept' fuer die grossflaechige HWCVD-Abscheidung fuer a-Si:H-basierende Solarzellen betrachtet werden. Erstmals wurde die HWCVD zur Abscheidung von Emitter-Schichten fuer Hetero-Solarzellen auf c

Azelainsäure 20 % Creme: Auswirkung auf Lebensqualität und Krankheitsaktivität bei erwachsenen Patientinnen mit Acne vulgaris.

Science.gov (United States)

Kainz, Julius Thomas; Berghammer, Gabriele; Auer-Grumbach, Piet; Lackner, Verena; Perl-Convalexius, Sylvia; Popa, Rodica; Wolfesberger, Barbara

2016-12-01

Zur Wirksamkeit von Aknetherapien und deren Auswirkungen auf die Lebensqualität erwachsener Patienten liegen kaum Daten vor. ZIEL: Erhebung der Wirkung von Azelainsäure 20 % Creme (Skinoren ® ) auf Akne-Schweregrad und krankheitsbedingte Lebensqualität. Nichtinterventionelle Studie bei erwachsenen Patientinnen mit leichter bis mittelschwerer Akne. Wirksamkeitsparameter waren DLQI sowie Akne-Schweregrad im Gesicht, am Dekolleté sowie am Rücken im Gesamturteil des Prüfarztes (IGA-Skala: Grad 1 = annähernd reine Haut; 2 = leichte Akne; 3 = mittelschwere Akne). Visiten waren zu Studienbeginn sowie nach 4-8 und zwölf Wochen geplant. Von den 251 eingeschlossenen Patientinnen lag zu Studienbeginn bei 59 %, 31 % bzw. 10 % ein IGA-Grad von 1, 2 bzw. 3 vor; die am häufigsten betroffene Hautpartie war das Gesicht (IGA-Grad 2 oder 3: 79 %). Nach zwölf Behandlungswochen war eine signifikante Besserung der Acne vulgaris im Gesicht (IGA-Grad 0 oder 1: 82 %) sowie auf Dekolleté und Rücken feststellbar. Der mediane DLQI-Wert sank von neun zu Studienbeginn auf fünf nach zwölf Behandlungswochen. Neunzig Prozent der behandelnden Ärzte und Patientinnen beurteilten die Verträglichkeit der Behandlung als sehr gut oder gut. Die Anwendung von 20%iger Azelainsäure-Creme führt bei erwachsenen Frauen zu einer signifikanten Besserung der Acne vulgaris und der krankheitsbedingten Lebensqualität. © 2016 Deutsche Dermatologische Gesellschaft (DDG). Published by John Wiley & Sons Ltd.

Ein Märtyrer auf der Zugspitze? Glühbirnenkreuze, Bildpropaganda und andere Medialisierungen des Totenkults um Albert Leo Schlageter in der Weimarer Republik und im Nationalsozialismus

OpenAIRE

Fuhrmeister, Christian

2004-01-01

Der Beitrag vergleicht die Grundzüge des Totenkults um Albert Leo Schlageter in der Weimarer Republik und im Nationalsozialismus. Der Fokus der Untersuchung liegt auf dem Medieneinsatz, der den nationalsozialistischen Märtyrerkult vom Totengedenken in der Weimarer Republik unterscheidet. Die verschiedenen Ebenen der Medialisierung werden abschließend an einem konkreten Fallbeispiel, dem Schlageter-Gedenken auf der Zugspitze, demonstriert.

Mechanical properties of pure and doped InP single crystals under concentrated loading

International Nuclear Information System (INIS)

Boyarskaya, Yu.S.; Grabko, D.Z.; Medinskaya, M.I.; Palistrant, N.A.

1997-01-01

The mechanical properties of pure and doped (Fe, Zn, Sn) InP single crystals were investigated in the temperature interval from 293 to 600 K. It was shown that impurity hardening (the microhardness increase) was more pronounced at elevated temperatures than at 293 K. This is conditioned by braking of the moving dislocations with impurities which is more observed in the the high temperature region. The obvious anisotropy of the scratch hardness was revealed at room temperature for the (001) face of crystals under investigation. This anisotropy decreased sharply in increasing the temperature from 293 to 600 K

InP tunnel junctions for InP/InGaAs tandem solar cells

Science.gov (United States)

Vilela, Mauro F.; Freundlich, Alex; Renaud, P.; Medelci, N.; Bensaoula, A.

1996-01-01

We report, for the first time, an epitaxially grown InP p(+)/n(++) tunnel junction. A diode with peak current densities up to 1600 A/cm and maximum specific resistivities (Vp/Ip - peak voltage to peak current ratio) in the range of 10(exp -4)Omega cm(exp 2) is obtained. This peak current density is comparable to the highest results previously reported for lattice matched In(0.53)Ga(0.47)As tunnel junctions. Both results were obtained using chemical beam epitaxy (CBE). In this paper we discuss the electrical characteristics of these tunnel diodes and how the growth conditions influence them.

Modulation of electrical properties in Cu/n-type InP Schottky junctions using oxygen plasma treatment

International Nuclear Information System (INIS)

Kim, Hogyoung; Jung, Chan Yeong; Hyun Kim, Se; Cho, Yunae; Kim, Dong-Wook

2015-01-01

Using current–voltage (I–V) measurements, we investigated the effect of oxygen plasma treatment on the temperature-dependent electrical properties of Cu/n-type indium phosphide (InP) Schottky contacts at temperatures in the range 100–300 K. Changes in the electrical parameters were evident below 180 K for the low-plasma-power sample (100 W), which is indicative of the presence of a wider distribution of regions of low barrier height. Modified Richardson plots were used to obtain Richardson constants, which were similar to the theoretical value of 9.4 A cm −2 K −2 for n-type InP. This suggests that, for all the samples, a thermionic emission model including a spatially inhomogeneous Schottky barrier can be used to describe the charge transport phenomena at the metal/semiconductor interface. The voltage dependence of the reverse-bias current revealed that Schottky emission was dominant for the untreated and high-plasma-power (250 W) samples. For the low-plasma-power sample, Poole–Frenkel emission was dominant at low voltages, whereas Schottky emission dominated at higher voltages. Defect states and nonuniformity of the interfacial layer appear to be significant in the reverse-bias charge transport properties of the low-plasma-power sample. (paper)

Spatial modulation of above-the-gap cathodoluminescence in InP nanowires

International Nuclear Information System (INIS)

Tizei, L H G; Zagonel, L F; Ugarte, D; Cotta, M A; Tencé, M; Stéphan, O; Kociak, M; Chiaramonte, T

2013-01-01

We report the observation of light emission on wurtzite InP nanowires excited by fast electrons. The experiments were performed in a scanning transmission electron microscope using an in-house-built cathodoluminescence detector. Besides the exciton emission, at 850 nm, emission above the band gap from 400 to 800 nm was observed. In particular, this broad emission presented systematic periodic modulations indicating variations in the local excitation probability. The physical origin of the detected emission is not clear. Measurements of the spatial variation of the above-the-gap emission points to the formation of leaky cavity modes of a plasmonic nature along the nanowire length, indicating the wave nature of the excitation. We propose a phenomenological model, which fits closely the observed spatial variations. (paper)

Spatial modulation of above-the-gap cathodoluminescence in InP nanowires

Science.gov (United States)

Tizei, L. H. G.; Zagonel, L. F.; Tencé, M.; Stéphan, O.; Kociak, M.; Chiaramonte, T.; Ugarte, D.; Cotta, M. A.

2013-12-01

We report the observation of light emission on wurtzite InP nanowires excited by fast electrons. The experiments were performed in a scanning transmission electron microscope using an in-house-built cathodoluminescence detector. Besides the exciton emission, at 850 nm, emission above the band gap from 400 to 800 nm was observed. In particular, this broad emission presented systematic periodic modulations indicating variations in the local excitation probability. The physical origin of the detected emission is not clear. Measurements of the spatial variation of the above-the-gap emission points to the formation of leaky cavity modes of a plasmonic nature along the nanowire length, indicating the wave nature of the excitation. We propose a phenomenological model, which fits closely the observed spatial variations.

The Achievement of Near-Theoretical-Minimum Contact Resistance to InP

Science.gov (United States)

Fatemi, Navid S.; Weizer, Victor G.

1993-01-01

We have investigated the electrical and metallurgical behavior of the InP/Au/Ni contact system. We show that when a layer of Au, 100 A or more in thickness, is introduced between n-InP and Ni contact metallization, specific contact resistivity R, values in the low 10(exp -8) Omega cm(exp 2) range are achieved after sintering. It is suggested that these ultralow values of R(sub c) are due to the presence, at the metal-InP interface, of a Ni3P layer combined with a stoichiometry change in the InP surface. We show, in addition, that it is possible to achieve very low R(sub c) values with this system without incurring device destroying sinter-induced metallurgical interdiffusion.

Large-signal modeling of multi-finger InP DHBT devices at millimeter-wave frequencies

DEFF Research Database (Denmark)

Johansen, Tom Keinicke; Midili, Virginio; Squartecchia, Michele

2017-01-01

A large-signal modeling approach has been developed for multi-finger devices fabricated in an Indium Phosphide (InP) Double Heterojunction Bipolar Transistor (DHBT) process. The approach utilizes unit-finger device models embedded in a multi-port parasitic network. The unit-finger model is based...... on an improved UCSD HBT model formulation avoiding an erroneous RciCbci transit-time contribution from the intrinsic collector region as found in other III-V based HBT models. The mutual heating between fingers is modeled by a thermal coupling network with parameters extracted from electro-thermal simulations...

Polarization dependence of two-photon absorption coefficient and nonlinear susceptibility tensor in InP

International Nuclear Information System (INIS)

Matsusue, Toshio; Bando, Hiroyuki; Fujita, Shoichi; Takayama, Yusuke

2011-01-01

Two-photon absorption (TPA) effect in (001) InP is investigated using fs laser. Its dependences on wavelength and polarization are clarified by single and double beam methods with linearly polarized lights. Characteristic features are revealed and discussed with scaling law, crystal bonding and mutual relation of polarizations for double beams. The results are successfully analyzed on the basis of the third-order susceptibility tensor for comprehensive understanding of TPA effect at any polarization geometry. (copyright 2011 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

Integrated cloud infrastructure of the LIT JINR, PE “NULITS” and INP's Astana branch

Directory of Open Access Journals (Sweden)

Mazhitova Yelena

2018-01-01

Full Text Available The article describes the distributed cloud infrastructure deployed on the basis of the resources of the Laboratory of Information Technologies of the Joint Institute for Nuclear Research (LIT JINR and some JINR Member State organizations. It explains a motivation of that work, an approach it is based on, lists of its participants among which there are private entity “Nazarbayev University Library and IT services” (PE “NULITS” Autonomous Education Organization “Nazarbayev University” (AO NU and The Institute of Nuclear Physics’ (INP's Astana branch.

Der Einfluss von Tests auf Studienleistung und Leistung [The Effects of Tests on Study Behavior and Performance

NARCIS (Netherlands)

Dirkx, Kim; Kester, Liesbeth; Kirschner, Paul A.

2012-01-01

Dirkx, K. J. H., Kester, L., & Kirschner, P. A. (2012, 24 September). Der Einfluss von Tests auf Studienverhalten und Leistung [The Effects of Study Behavior and Performance]. Presentation at the Leibniz Institute for Pedagogies in Sciences and Mathematics (IPN), Kiel, Germany.

Development of III-Sb metamorphic DBR membranes on InP for vertical cavity laser applications

Science.gov (United States)

Addamane, S. J.; Mansoori, A.; Renteria, E. J.; Dawson, N.; Shima, D. M.; Rotter, T. J.; Hains, C. P.; Dawson, L. R.; Balakrishnan, G.

2016-04-01

Sb-based metamorphic DBR membranes are developed for InP-based vertical cavity laser applications. The reflectivity of the metamorphic DBR membrane is compared to the reflectivity of a lattice-matched DBR to characterize the optical quality of the DBR membrane. The metamorphic interface between InP and the III-antimonides is found to degrade the reflectivity of the DBR. Therefore, the growth temperature for the metamorphic DBR is optimized in order to obtain highly reflective (>99.8%) III-Sb thin-film membranes.

Epitaxial growth of quantum dots on InP for device applications operating at the 1.55 μm wavelength range

DEFF Research Database (Denmark)

Semenova, Elizaveta; Kulkova, Irina; Kadkhodazadeh, Shima

2014-01-01

. In order to extract the QD benefits for the longer telecommunication wavelength range the technology of QD fabrication should be developed for InP based materials. In our work, we take advantage of both QD fabrication methods Stranski-Krastanow (SK) and selective area growth (SAG) employing block copolymer...

Mechanical Stress in InP Structures Etched in an Inductively Coupled Plasma Reactor with Ar/Cl2/CH4 Plasma Chemistry

Science.gov (United States)

Landesman, Jean-Pierre; Cassidy, Daniel T.; Fouchier, Marc; Pargon, Erwine; Levallois, Christophe; Mokhtari, Merwan; Jimenez, Juan; Torres, Alfredo

2018-02-01

We investigated the crystal lattice deformation that can occur during the etching of structures in bulk InP using SiNx hard masks with Ar/Cl2/CH4 chemistries in an inductively coupled plasma reactor. Two techniques were used: degree of polarization (DOP) of the photo-luminescence, which gives information on the state of mechanical stress present in the structures, and spectrally resolved cathodo-luminescence (CL) mapping. This second technique also provides elements on the mechanical stress in the samples through analysis of the spectral shift of the CL intrinsic emission lines. Preliminary DOP mapping experiments have been conducted on the SiNx hard mask patterns without etching the underlying InP. This preliminary study demonstrated the potential of DOP to map mechanical stress quantitatively in the structures. In a second step, InP patterns with various widths between 1 μm and 20 μm, and various depths between 1 μm and 6 μm, were analyzed by the 2 techniques. DOP measurements were made both on the (100) top surface of the samples and on the (110) cleaved cross section. CL measurements were made only from the (100) surface. We observed that inside the etched features, close to the vertical etched walls, there is always some compressive deformation, while it is tensile just outside the etched features. The magnitude of these effects depends on the lateral and depth dimensions of the etched structures, and on the separation between them (the tensile deformation increases between them due to some kind of proximity effect when separation decreases).

[Heinz von zur Mühlen. Auf den Spuren einiger revlaer Firmen und Familien] / Paul Kaegbein

Index Scriptorium Estoniae

Kaegbein, Paul

2007-01-01

Arvustus: Heinz von zur Mühlen. Auf den Spuren einiger revlaer Firmen und Familien. In : Buch und Bildung im Baltikum. Münster : LIT, 2005, lk. 527-541. Pika tänava majade omanikest alates 17. sajandist - perekonnad Koch, Meyer, Kluge, Ströhm, Wassermann, Glehn, Eggers, Koppelson, Weiss. Nii loob autor pildi Tallinna "firmade ajaloost"

Studies on semiconductors based on InP with sub-ps response times

International Nuclear Information System (INIS)

Biermann, K.

2007-01-01

The present work describes investigation of new material concepts accomplished using molecular-beam-epitaxy (MBE) growth for application in ultra-fast photonic components. Nominally undoped and Be doped GaInAs/AlInAs multiple-quantumwell structures (MQW) were grown by MBE at growth temperatures down to 100 C (LT-MBE) on semi-insulating InP substrates. Crystalline, electric and optical properties of as-grown and annealed structures were investigated. Energy states near the conduction band of GaInAs determine the electrical and optical properties of LT-MQWs. The dynamics of charge carrier relaxation was studied by means of pump and probe experiments. Measurements of the differential transmission when excited by an additional cw laser and measurements utilizing two closely sequenced pump pulses support the capability of Be doped as-grown (annealed) LT GaInAs/AlInAs MQW structures for use in optical switches at switching frequencies in the 1 Tbit/s (250 Gbit/s) range. The voltage-induced change of interband transmission of InP based quantumcascade-lasers (QCL) during pulsed mode operation was analyzed by means of 8 band k.p calculations. The impacts of varying charge carrier distributions and of electrically heated samples can be neglected compared to the dominating effect of the electrical field on the interband transmission. The impact of MBE growth parameters on the interface quality of AlAsSb/ GaInAs heterostructures were determined by means of Hall measurements, temperature- and intensity-dependent PL measurements and spectral measurements of the interband- and intersubband-absorption. The impact of In segregation and Sb diffusion on the intersubband absorption was analyzed on the basis of bandstructure calculations. Intersubband transitions at wavelengths of about 1.8 μm (1.55 μm) were successfully achieved in MQW (coupled QW) structures. (orig.)

Actively controlled current collector; Aktiv geregelter Stromabnehmer. Innovation fuer den schnellen Verkehr auf konventionellen Strecken

Energy Technology Data Exchange (ETDEWEB)

Mueller, C.

2003-07-01

Deutsche Bahn is presently endeavouring to further improve the interaction between the overhead wire and the current collectors on its locomotives and trainsets. The major factors behind this initiative are cost, quality and noise prevention. The outcome is the development of a completely new type of current collector for high-speed operation even on conventional track. Prototypes have meanwhile undergone practical trials on the 200 km/h line from Augsburg to Donauwoerth. The new current collector is a single-arm pantograph jointly developed by DB and Bombardier Transportation. (orig.) [German] Die Deutsche Bahn versucht derzeit, das Zusammenspiel von Oberleitung und den Stromabnehmern ihrer Lokomotiven und Triebzuege weiter zu verbessern. Kosten, Qualitaet und Laermschutz sind dabei die wesentlichen Gruende. Sie haben zur Entwicklung eines voellig neuen Stromabnehmer-Typus speziell fuer den Hochgeschwindigkeitsverkehr auch auf konventionellen Strecken gefuehrt. Auf der Tempo-200-Strecke von Augsburg nach Donauwoerth absolvierten jetzt Prototypen erste Praxis-Tests. Es handelt sich um aktiv geregelte, akustisch optimierte Einholmstromabnehmer, gemeinsam entwickelt von DB und Bombardier Transportation. (orig.)

Influencing parameters of water and methanol transport in a big direct methanol fuel cell; Einflussgroessen auf den Wasser- und Methanoltransport einer groesseren Direkt-Methanol Brennstoffzelle

Energy Technology Data Exchange (ETDEWEB)

Schonert, Morten

2008-07-01

. There was no effect of cathode water on the cell voltage. However, the influence of different catalysts could be clearly identified and is a major influencing factor of MEA performance. The stability of the cell voltage, on the other hand, is strongly dependent on the flow distribution structure. For example, with a single meander operation at the low air volume flows required for water autonomy is possible. Methanol permeation can be influenced and minimized via the methanol concentration on the anode as a function of current density. (orig.) [German] In der vorliegenden Arbeit wurden die Einflussgroessen auf den Wasser- und Methanoltransport einer groesseren Direkt-Methanol Brennstoffzelle (Pel > 1 kW) untersucht. Hintergrund ist ein angestrebter wasserautarker Betrieb eines Direkt-Methanol Brennstoffzellensystems. Da bei der elektrochemischen Reaktion auf der Anode Wasser verbraucht wird und auf der Kathode dabei mehr Wasser entsteht, muss diese Differenz ueber die Luft ausgetragen werden. Alles weiter auf der Kathode anfallende Wasser muss kondensiert und der Anode zurueckgefuehrt werden. Mit zunehmender Umgebungstemperatur muss dabei der Luftvolumenstrom reduziert werden, da ansonsten mehr Wasser als erlaubt ausgetragen wuerde. Des Weiteren fuehren niedrigere Luftvolumenstroeme auf der Kathode zu einer instabilen Zellspannung, was auch einem uebermaessigen Anfall von Wasser zugeschrieben wird. Es ist daher von der Seite der Systemtechnik gewollt, die Menge des auf der Kathode anfallenden Wassers zu reduzieren. Es zeigte sich, dass die Wasserpermeation durch die Membran-Elektroden-Einheit (MEA) bei den fuer das Erreichen der Wasserautarkie notwendigen geringen Luftvolumenstroemen vorrangig von der Aufnahmekapazitaet und der Verweilzeit der Luft ueber der Kathode abhaengig ist und weniger von der Art des auf der Kathode verwendeten Materials. Die Wasserpermeation kommt bei einem Ausgleich des Konzentrationsgradienten zum Stillstand. Neben der Wasserpermeation kommt

Durch Athen auf Frankfurt blicken ‚Austerity Urbanism‘, Uneven Development und Alltäglichkeit – Reflektionen aus zwei Workshops

Directory of Open Access Journals (Sweden)

Felix Wiegand

2016-11-01

Full Text Available Aufbauend auf den Erfahrungen zweier Workshops zu (urbaner Austerität in Griechenland und Deutschland diskutiert der Beitrag die (unterschiedliche Geschichte und Geographie der Austerität mit besonderem Blick auf die Regionen Frankfurt/Rhein-Main und Athen. Die Erfahrungen der multiplen Krise seit 2008, die sich in Griechenland vor dem Hintergrund einer austeritätspolitischen ‚Shock Doctrine’ und in der BRD im Kontext eines langfristigen Projekts der ‚scheibchenweisen’ Austerität entwickelten, eröffnen dabei die Möglichkeit, die Debatten um urbane Austerität einem kritischen Blick zu unterziehen. Der Beitrag sieht insbesondere im Bereich der Krisen der (urbanen sozialen Reproduktion sowie der Krisen der (städtischen Politik und Repräsentation weiteren Forschungsbedarf.

A G-band terahertz monolithic integrated amplifier in 0.5-μm InP double heterojunction bipolar transistor technology

International Nuclear Information System (INIS)

Li Ou-Peng; Zhang Yong; Xu Rui-Min; Cheng Wei; Wang Yuan; Niu Bing; Lu Hai-Yan

2016-01-01

Design and characterization of a G-band (140–220 GHz) terahertz monolithic integrated circuit (TMIC) amplifier in eight-stage common-emitter topology are performed based on the 0.5-μm InGaAs/InP double heterojunction bipolar transistor (DHBT). An inverted microstrip line is implemented to avoid a parasitic mode between the ground plane and the InP substrate. The on-wafer measurement results show that peak gains are 20 dB at 140 GHz and more than 15-dB gain at 140–190 GHz respectively. The saturation output powers are −2.688 dBm at 210 GHz and −2.88 dBm at 220 GHz, respectively. It is the first report on an amplifier operating at the G-band based on 0.5-μm InP DHBT technology. Compared with the hybrid integrated circuit of vacuum electronic devices, the monolithic integrated circuit has the advantage of reliability and consistency. This TMIC demonstrates the feasibility of the 0.5-μm InGaAs/InP DHBT amplifier in G-band frequencies applications. (paper)

Identification of defects in undoped semi-insulating InP by positron lifetime

International Nuclear Information System (INIS)

Mao Weidong; Wang Shaojie; Wang Zhu

2001-01-01

Positron lifetime measurements, carried out over the temperature range of 10-300 K, have been used to investigate defects in two undoped semi-insulating InP samples. The positron lifetime spectra were analysed by both PATFIT and MELT techniques. The results at room temperature reveal a positron lifetime of around 273 ps, which is associated with indium vacancies V In or V In -hydrogen complexes. The positron average lifetime is temperature dependent and decreases with increasing temperature at the beginning (≤ 80 K and ≤ 120 K), and then remains unchanged, which is attributed to the influence of negative vacancies and detrapping of the positron from those negative ions of Mg, Zn, Ag and Ca with ionization level (1-)

Improved interface properties of atomic-layer-deposited HfO{sub 2} film on InP using interface sulfur passivation with H{sub 2}S pre-deposition annealing

Energy Technology Data Exchange (ETDEWEB)

Jin, Hyun Soo [Department of Materials Science & Engineering, Hanyang University, Ansan 426-791 (Korea, Republic of); Cho, Young Jin [Inorganic Material Lab., Samsung Advanced Institute of Technology, Suwon 443-803 (Korea, Republic of); Department of Materials Science & Engineering and Inter-university Semiconductor Research Center, Seoul National University, Seoul 151-742 (Korea, Republic of); Seok, Tae Jun; Kim, Dae Hyun; Kim, Dae Woong [Department of Materials Science & Engineering, Hanyang University, Ansan 426-791 (Korea, Republic of); Lee, Sang-Moon [Process Development Team, Semiconductor R& D Center, Samsung Electronics Co. Ltd, Hwasung 445-701 (Korea, Republic of); Park, Jong-Bong; Yun, Dong-Jin [Analytical Engineering Group, Platform Technology Lab., Samsung Advanced Institute of Technology, Suwon 443-803 (Korea, Republic of); Kim, Seong Keun [Center for Electronic Materials, Korea Institute of Science and Technology, Seoul 136-791 (Korea, Republic of); Hwang, Cheol Seong, E-mail: cheolsh@snu.ac.kr [Department of Materials Science & Engineering and Inter-university Semiconductor Research Center, Seoul National University, Seoul 151-742 (Korea, Republic of); Park, Tae Joo, E-mail: tjp@hanyang.ac.kr [Department of Materials Science & Engineering, Hanyang University, Ansan 426-791 (Korea, Republic of)

2015-12-01

Highlights: • ALD HfO{sub 2} films were grown on InP for III–V compound-semiconductor-based devices. • S passivation was performed with (NH{sub 4}){sub 2}S solution and annealing under a H{sub 2}S atmosphere. • The H{sub 2}S annealing provided similar S profiles at the interface without surface damage. • The H{sub 2}S annealing was more effective to suppress interface state density due to thermal energy. - Abstract: Surface sulfur (S) passivation on InP substrate was performed using a dry process – rapid thermal annealing under H{sub 2}S atmosphere for III–V compound-semiconductor-based devices. The electrical properties of metal-oxide-semiconductor capacitor fabricated with atomic-layer-deposited HfO{sub 2} film as a gate insulator were examined, and were compared with the similar devices with S passivation using a wet process – (NH{sub 4}){sub 2}S solution treatment. The H{sub 2}S annealing provided solid S passivation with the strong resistance against oxidation compared with the (NH{sub 4}){sub 2}S solution treatment, although S profiles at the interface of HfO{sub 2}/InP were similar. The decrease in electrical thickness of the gate insulator by S passivation was similar for both methods. However, the H{sub 2}S annealing was more effective to suppress interface state density near the valence band edge, because thermal energy during the annealing resulted in stronger S bonding and InP surface reconstruction. Moreover, the flatband voltage shift by constant voltage stress was lower for the device with H{sub 2}S annealing.

Rezension zu: Elisabeth Tuider, Martin Dannecker: Das Recht auf Vielfalt. Aufgaben und Herausforderungen sexueller Bildung. Göttingen: Wallstein Verlag 2016.

Directory of Open Access Journals (Sweden)

Marcus Felix

2017-06-01

Full Text Available Sexuelle Bildung ist und war schon immer eine umkämpfte Disziplin der Pädagogik. Dabei ist die aktuelle Erregung um diese als Reaktion auf die fortschreitende Pluralisierung von Lebensentwürfen und die Liberalisierung von Normen und Werten zu verstehen, auf die eine diversitätsbewusste Sexualpädagogik in ihren Konzepten Bezug nimmt, die aber von ultrakonservativen, fundamentalistischen und rechtsradikalen Gruppierungen angegriffen werden. Diese Gemengelage nehmen die Autor_innen zum Anlass, um ausgewählte in der Kritik stehende Inhalte einer sexualfreundlichen Bildung zu besprechen und die Argumentationsmuster der Kritiker_innen zu verdeutlichen. Damit trägt der Band zur (Re-Kontextualisierung und Versachlichung einer hochemotionalen Auseinandersetzung über sexuelle Bildung bei.

High-efficiency silicon doping of InP and In0.53Ga0.47As in gas source and metalorganic molecular beam epitaxy using silicon tetrabromide

International Nuclear Information System (INIS)

Jackson, S.L.; Fresina, M.T.; Baker, J.E.; Stillman, G.E.

1994-01-01

Efficient vapor source Si doping of InP and In 0.53 Ga 0.47 As have been demonstrated using SiBr 4 as the Si source for both gas source (GSMBE) and metalorganic molecular beam epitaxy (MOMBE). Net electron concentrations ranging from n=2x10 17 to 6.8x10 19 cm -3 and from 9x10 16 to 3x10 19 cm -3 have been obtained for InP and In 0.53 Ga 0.47 As, respectively. Comparison of these data with those for Si 2 H 6 indicate that the Si incorporation efficiency with SiBr 4 is more than 10 000 times greater than with Si 2 H 6 for substrate temperatures in the range of 475≤T s ≤500 degree C. Specular surface morphologies were obtained, even for the most heavily doped samples. While [Si] as high as 1.8x10 20 cm -3 was obtained in InP, the net electron concentrations and 300 K Hall mobilities decrease with increasing [Si] for [Si]>6.8x10 19 cm -3 . Contact resistances as low as R c =3x10 -8 Ω cm 2 were obtained using a nonalloyed Ti/Pt/Au contact to InP layers doped to n=6.3x10 19 cm -3 . During GSMBE growth, an increased Si background concentration ([Si]∼2x10 17 cm -3 ) was observed after extended use of the SiBr 4 source for these heavy doping concentrations. This increased background was not observed in MOMBE-grown material. Depth profiles of pulse-doped structures indicate the absence of memory effects for structures grown by MOMBE

Development of a model to describe organic films on aerosol particles and cloud droplets. Final report; Entwicklung eines Modells zur Beschreibung organischer Filme auf Aerosolteilchen und Wolkentropfen. Abschlussbericht

Energy Technology Data Exchange (ETDEWEB)

Forkel, R. (ed.); Seidl, W.

2000-12-01

Organic substances with polar groups are enriched on water surfaces and can form monomolecular surface films which can reduce the surface tension. A new model to describe surface films is presented, which describes in detail the film forming properties of fatty acids with up to 22 carbon atoms. The model is applied to measured concentrations of fatty acids (from the literature) in rain water and on aerosol particles and cloud droplets. An investigation of the sources of fatty acids has shown, that abrasion of the wax layer on leaves and needles is the main sources for surface film material in the western USA. Anthropogenic sources in urban areas are meat preparation and cigarette smoke. The agreement between model results and measurements when the model was applied to rain water confirms the original assumption that fatty acids are a main compound of surface films in rain water. For humid aerosol particles the application of the model on measured concentrations of fatty acids only showed strongly diluted films. Only for remote forest areas in western USA concentrated films were found, with the surface tension reduced by 20 to 30%. On cloud droplets the surface films is still more diluted than on aerosol particles. For all investigated cases the films was too much diluted to have an effect on the activation process of cloud droplets. (orig.) [German] Organische Substanzen mit polaren Gruppen reichern sich an der Wasseroberflaeche an und koennen monomolekulare Oberflaechenfilme bilden, die zu einer Verringerung der Oberflaechenspannung fuehren. Es wird ein neues Modell zur Beschreibung eines Oberflaechenfilms beschrieben, das detailliert die filmbildenden Eigenschaften der Fettsaeuren mit bis zu 22 Kohlenstoffatomen erfasst. Dieses Modell ist auf gemessene Konzentrationen von Fettsaeuren (Literaturdaten) in Regenwasser und auf atmosphaerischen Aerosolteilchen und Wolkentropfen angewandt worden. Eine Betrachtung der Quellen der Fettsaeuren zeigte, dass der Abrieb der

An investigation of the DC and RF performance of InP DHBTs transferred to RF CMOS wafer substrate

Science.gov (United States)

Ren, Kun; Zheng, Jiachen; Lu, Haiyan; Liu, Jun; Wu, Lishu; Zhou, Wenyong; Cheng, Wei

2018-05-01

This paper investigated the DC and RF performance of the InP double heterojunction bipolar transistors (DHBTs) transferred to RF CMOS wafer substrate. The measurement results show that the maximum values of the DC current gain of a substrate transferred device had one emitter finger, of 0.8 μm in width and 5 μm in length, are changed unobviously, while the cut-off frequency and the maximum oscillation frequency are decreased from 220 to 171 GHz and from 204 to 154 GHz, respectively. In order to have a detailed insight on the degradation of the RF performance, small-signal models for the InP DHBT before and after substrate transferred are presented and comparably extracted. The extracted results show that the degradation of the RF performance of the device transferred to RF CMOS wafer substrate are mainly caused by the additional introduced substrate parasitics and the increase of the capacitive parasitics induced by the substrate transfer process itself. Project supported by the National Natural Science Foundation of China (No. 61331006) and the Natural Science Foundation of Zhejiang Province (No. Y14F010017).

(Kein Grund zur Homosexualität: Ein Plädoyer zum Verzicht auf psychogenetische Erklärungsversuche von homosexuellen, heterosexuellen und anderen Orientierungen

Directory of Open Access Journals (Sweden)

Ralf Binswanger

2016-07-01

Full Text Available Fritz Morgenthaler steht mit seinem Konzept der «Weichenstellungen » auf dem Boden von Freuds Postulat, wonach homosexuelle und heterosexuelle Orientierungen gleich erklärungsbedürftig sind. Allerdings können die «Weichenstellungen» weniger Hetero- oder Homosexualität per se erklären, sondern eher die verschiedenen Formen von Homo- und Heterosexualität in actu, wie sie in Fantasie und Verhalten gelebt werden. Mit Sexualität per se und Sexualität in actu sind zwei qualitativ verschiedene Gesichtspunkte benannt, unter denen Diskurse über manifeste und organisierte Sexualität sowie Perversionen mit Vorteil geführt werden. Dabei wird der Perversionsbegriff ausschliesslich der Sexualität in actu zugeordnet, welche als dialektische Einheit von sexuellen und nicht-sexuellen Funktionen aufgefasst wird. Pervers ist sexuelle Aktivität dann, wenn innerhalb dieser Einheit eine nicht-sexuelle Funktion die Priorität über die Triebbefriedigung hat. Sexualität per se bezeichnet Homosexualität, Heterosexualität, Fetischismus, Sadomasochismus, Pädophilie usw. als verschiedene erwachsene Sexualorganisationen – als hierarchische Organisation von Partialtrieben – auf «gleichberechtigter», entpathologisierter Ebene. Nachdem begründet wird, weshalb auch Judith Le Soldat den Grund zur Homosexualität per se anscheinend nicht gefunden hat und alle bisherigen psychogenetischen Herleitungen der verschiedenen erwachsenen Sexualorganisationen dieses Ziel verfehlen, empfiehlt sich ein grundsätzlicher Verzicht auf solche Erklärungsversuche – so wie es für die Heterosexualität per se meistens gehandhabt wird. Dagegen kann auf den u. a. von Robert Stoller verwendeten Begriff imprinting oder Prägung zurückgegriffen werden, welchen die Zürcher Analytiker Harold Lincke und Werner Fessler von jeglichem Biologismusverdacht befreit haben. Zum Schluss wird hervorgehoben, wie sehr Morgenthaler und Le Soldat mit ihrer Suche nach dem Grund zur

Investigations on the effect of creep stress on the thermal properties of metallic materials; Untersuchungen zum Einfluss der Zeitstandbeanspruchung auf die thermischen Eigenschaften metallischer Werkstoffe

Energy Technology Data Exchange (ETDEWEB)

Radtke, U [Univ. Dortmund (Germany); Crostack, H A [Univ. Dortmund (Germany); Winschuh, E [Siemens KWU, Offenbach (Germany)

1996-12-31

Using thermal wave analysis with front side infrared detection on sample material damaged by creep, one examines whether the creep stress has an effect on the thermal material properties and to what effect this can be used to estimate the remaining service life. (orig.) [Deutsch] Unter Anwendung der Waermewellenanalyse mit frontseitiger Infrarotdetektion auf zeitstandgeschaedigtes Probenmaterial wird untersucht, ob die Zeitstandbeanspruchung einen Einfluss auf die thermischen Werkstoffeigenschaften hat und inwieweit dieser zur Abschaetzung der Restlebensdauer genutzt werden kann. (orig.)

Ultrathin ZnS and ZnO Interfacial Passivation Layers for Atomic-Layer-Deposited HfO2 Films on InP Substrates.

Science.gov (United States)

Kim, Seung Hyun; Joo, So Yeong; Jin, Hyun Soo; Kim, Woo-Byoung; Park, Tae Joo

2016-08-17

Ultrathin ZnS and ZnO films grown by atomic layer deposition (ALD) were employed as interfacial passivation layers (IPLs) for HfO2 films on InP substrates. The interfacial layer growth during the ALD of the HfO2 film was effectively suppressed by the IPLs, resulting in the decrease of electrical thickness, hysteresis, and interface state density. Compared with the ZnO IPL, the ZnS IPL was more effective in reducing the interface state density near the valence band edge. The leakage current density through the film was considerably lowered by the IPLs because the film crystallization was suppressed. Especially for the film with the ZnS IPL, the leakage current density in the low-voltage region was significantly lower than that observed for the film with the ZnO IPL, because the direct tunneling current was suppressed by the higher conduction band offset of ZnS with the InP substrate.

Eröffnung des „Hauses der Astronomie“ auf dem Königsstuhl

OpenAIRE

Pössel, Markus; Tschira, Klaus

2012-01-01

Mit dem „Haus der Astronomie“ (HdA) auf dem Königsstuhl ist ein neues Zentrum für astronomische Bildungs- und Öffentlichkeitsarbeit in Heidelberg eröffnet. Das Haus der Astronomie ist eine gemeinsame Einrichtung der Max-Planck-Gesellschaft (MPG) und der Klaus Tschira Stiftung unter Beteiligung der Stadt Heidelberg und der Ruperto Carola, deren Zentrum für Astronomie eng mit dem HdA zusammenarbeitet. Ziel des HdA ist es, astronomische Forschung einer breiten Öffentlichkeit in verständlicher Fo...

Hydrogen Passivation of Interstitial Zn Defects in Heteroepitaxial InP Cell Structures and Influence on Device Characteristics

Science.gov (United States)

Ringel, S. A.; Chatterjee, B.

2004-01-01

Hydrogen passivation of heteroepitaxial InP solar cells is of recent interest for deactivation of dislocations and other defects caused by the cell/substrate lattice mismatch that currently limit the photovoltaic performance of these devices. In this paper we present strong evidence that, in addition to direct hydrogen-dislocation interactions, hydrogen forms complexes with the high concentration of interstitial Zn defects present within the p(+) Zn-doped emitter of MOCVD-grown heteroepitaxial InP devices, resulting in a dramatic increase of the forward bias turn-on voltage by as much as 280 mV, from 680 mV to 960 mV. This shift is reproducible and thermally reversible and no such effect is observed for either n(+)p structures or homoepitaxial p(+)n structures grown under identical conditions. A combination of photoluminescence (PL), electrochemical C-V dopant profiling, SIMS and I-V measurements were performed on a set of samples having undergone a matrix of hydrogenation and post-hydrogenation annealing conditions to investigate the source of this voltage enhancement and confirm the expected role of interstitial Zn and hydrogen. A precise correlation between all measurements is demonstrated which indicates that Zn interstitials within the p(+) emitter and their interaction with hydrogen are indeed responsible for this device behavior.

Prediction of phonon thermal transport in thin GaAs, InAs and InP nanowires by molecular dynamics simulations: influence of the interatomic potential

Energy Technology Data Exchange (ETDEWEB)

Carrete, J; Longo, R C; Gallego, L J, E-mail: jesus.carrete@usc.es [Departamento de Fisica de la Materia Condensada, Facultad de Fisica, Universidad de Santiago de Compostela, E-15782 Santiago de Compostela (Spain)

2011-05-06

A number of different potentials are currently being used in molecular dynamics simulations of semiconductor nanostructures. Confusion can arise if an inappropriate potential is used. To illustrate this point, we performed direct molecular dynamics simulations to predict the room temperature lattice thermal conductivity {lambda} of thin GaAs, InAs and InP nanowires. In each case, simulations performed using the classical Harrison potential afforded values of {lambda} about an order of magnitude smaller than those obtained using more elaborate potentials (an Abell-Tersoff, as parameterized by Hammerschmidt et al for GaAs and InAs, and a potential of Vashishta type for InP). These results will be a warning to those wishing to use computer simulations to orient the development of quasi-one-dimensional systems as heat sinks or thermoelectric devices.

Morphological evolution of InP nano-dots and surface modifications after keV irradiation

International Nuclear Information System (INIS)

Paramanik, Dipak; Sahu, S N; Varma, Shikha

2008-01-01

Evolution and coarsening behaviour of self-assembled nano-dots fabricated on an InP surface by 3 keV Ar ion sputtering have been studied in conjunction with the structural modifications at the surface. The dots have been produced in off-normal geometry but in the absence of rotation. For small sputtering durations, the dots coarsen and agglomerate, up to a critical time t c , while the surface roughens and experiences a tensile stress. A relaxation in this stress is observed after the surface becomes amorphized at t c , beyond which an inverse coarsening, fragmentation of dots and a smoothened surface are observed

Growth of thermal oxide layers on GaAs and InP in the presence of ammonium heptamolybdate

International Nuclear Information System (INIS)

Mittova, I.Ya.; Lavrushina, S.S.; Afonchikova, A.V.

2004-01-01

Processes of thermal oxidation of GaAs and InP in the presence of ammonium heptamolybdate were studied using the methods of X-ray fluorescence analysis and IR spectroscopy at temperatures 480-580 Deg C. It was ascertained that introduction of the activator into the system results in accelerated growth of layers on semiconductors due to participation of anionic component of the chemostimulator in oxidation processes. The activator is integrated into the salts formed [ru

Einfluss von abiotischen Faktoren auf Wuchs und Scopolamin-Biosynthese in Duboisia myoporoides.

Directory of Open Access Journals (Sweden)

Ullrich, Sophie Friederike

2014-09-01

Full Text Available Duboisia ist eine in Australien beheimatete Pflanze aus der Familie der Nachtschattengewächse, die Tropanalkaloide als sekundäre Pflanzeninhaltsstoffe enthält, deren quantitativ und ökonomisch bedeutsamstes Scopolamin ist. Um neue Erkenntnisse hinsichtlich des Einflusses abiotischer Faktoren auf Wuchs und Scopolamin-Biosynthese zu gewinnen, wurden Pflanzen der Art Duboisia myoporoides in Hydrokultur in Klimakammern unter streng kontrollierten Bedingungen angebaut (kalibrierte Einstellungen für Beleuchtungsdauer, Lichtintensität und Temperatur. Wichtige Messgrößen stellten dabei Biomasse und Alkaloidgehalt dar, letzterer gemessen mittels UHPLC und LC-MS.

Photovoltaic characteristics of n(+)pp(+) InP solar cells grown by OMVPE

Science.gov (United States)

Tyagi, S.; Singh, K.; Bhimnathwala, H.; Ghandhi, S. K.; Borrego, J. M.

1990-01-01

The photovoltaic characteristics of n(+)/p/p(+) homojunction InP solar cells fabricated by organometallic vapor-phase epitaxy (OMVPE) are described. The cells are characterized by I-V, C-V and quantum efficiency measurements, and simulations are used to obtain various device and material parameters. The I-V characteristics show a high recombination rate in the depletion region; this is shown to be independent of the impurity used. It is shown that cadmium is easier to use as an acceptor for the p base and p(+) buffer and is therefore beneficial. The high quantum efficiency of 98 percent at long wavelengths measured in these cells indicates a very good collection efficiency in the base. The short-wavelength quantum efficiency is poor, indicating a high surface recombination.

A unified calculation of the optical spectral band positions and electron paramagnetic resonance spectral data for Yb3+ in InP semiconductor

International Nuclear Information System (INIS)

Feng Wenlin; Zheng Wenchen; Liu Honggang; Li, X.M.

2011-01-01

Highlights: → We found a energy matrix of 4f 13 ion in cubic crystals and external magnetic field. → Optical and EPR data of Yb 3+ : InP are explained by diagonalizing the energy matrix. → Signs of hyperfine structure constants A( 171 Yb 3+ ) and A( 173 Yb 3+ ) are determined. - Abstract: The complete energy matrix for a 4f 13 ion in cubic crystals and under an external magnetic field is established by means of the irreducible tensor operator and/or equivalent operator methods. By diagonalizing the energy matrix, four optical spectrum band positions and three spin-Hamiltonian parameters [g factor and hyperfine structure constants A( 171 Yb 3+ ) and A( 173 Yb 3+ )] for Yb 3+ in InP semiconductor are calculated together. The calculated results are in good agreement with the experimental values. The signs of hyperfine structure constants A( 171 Yb 3+ ) and A( 173 Yb 3+ ) are determined from the calculations. The results are discussed.

Room-temperature particle detectors with guard rings based on semi-insulating InP co-doped with Ti and Zn

International Nuclear Information System (INIS)

Yatskiv, R.; Zdansky, K.; Pekarek, L.

2009-01-01

Particle detectors made with a guard-ring (GR) electrode, operating at room temperature, have been studied. The detectors were fabricated on a semi-insulating InP crystal co-doped with Ti and Zn, grown using the Liquid-Encapsulated Czochralski technique. The detection performance of the particle detectors was evaluated using alpha particles emitted from a 241 Am source. Good detector performance has been achieved with measured charge-collection efficiencies of 99.9% and 98.2% and FWHM energy resolutions of 0.9% and 2.1%. The measurements were carried out at 230 K for negative and positive bias voltages of the irradiated electrode. The good performance is due to the SI properties of the material which has been achieved by doping with suitable Ti atoms and co-doping with a low concentration of Zn acceptors, sufficient to fully compensate shallow donors. Electron and hole charge-collection efficiencies (CCEs) were measured at various temperatures. At room temperature, unlike at low temperature (T<250 K), the hole CCE was better than the electron CCE, which can be explained by the presence of electron-trapping centres in InP with a temperature-dependent capture rate.

Radiation-hard, high efficiency InP solar cell and panel development

International Nuclear Information System (INIS)

Keavney, C.J.; Vernon, S.M.; Haven, V.E.; Nowlan, M.J.; Walters, R.J.; Slatter, R.L.; Summers, G.P.

1991-01-01

Indium phosphide solar cells with efficiencies over 19% (Air mass zero, 25 degrees C) and area of 4 cm 2 have been made and incorporated into prototype panels. The panels will be tested in space to confirm the high radiation resistance expected from InP solar cells, which makes the material attractive for space use, particularly in high-radiation orbits. Laboratory testing indicated an end-of-life efficiency of 15.5% after 10 15 1 MeV electrons, and 12% after 10 16 . These cells are made by metalorganic chemical vapor deposition, and have a shallow homojunction structure. The manufacturing process is amendable to scale-up to larger volumes; more than 200 cells were produced in the laboratory operation. Cell performance, radiation degradation, annealing behavior, and results of deep level transient spectroscopy studies are presented in this paper

Generative Fertigung im Maschinenbau - industrieller 3D-Druck auf dem Weg in die Serienproduktion

OpenAIRE

Müller, Bernhard

2014-01-01

3D-Druck ist aktuell medial omnipräsent, sein Potential für echte industrielle Anwendungen, v. a. im Maschinenbauumfeld, wird kontrovers diskutiert. Der Vortrag gibt einen fundierten Einblick in den Stand der Technik zum industriellen 3D-Druck (Generative Fertigung , Additive Manufacturing) und zeigt spezifische Potentiale mit industrieller Relevanz auf. Dabei werden ebenso Praxisbeispiele aus heutiger Anwendung in der Industrie gezeigt als auch Zukunftsszenarien für potentielle Anwendungen e...

Scientific and technical progress in high-energy astrophysics at INPE

International Nuclear Information System (INIS)

Bui-Van, N.A.; Jayanthi, U.B.; Jardim, J.O.D.; Braga, J.; Santo, C.M.E.

1984-01-01

The recent advances in high-energy Astrophysics pertains to the study of compact objects in galactic nuclei, binary systems and pulsars. These aspects are best understood by the study of the emissions in X- and gamma rays of these objects through the temporal variation in flux and spectrum. The Southern Hemisphere offers some of the unique objects for investigations such as galactic center, the Vela pulsar etc. For high temporal and spectra resolution studies two telescopes 'GeLi' and 'Pulsar' were designed and constructed. To support these scientific activities, a program in balloon launching and data acquisition facilities has been developed since 1971. The 'Balloon Launching Center' of INPE has capacity to launch balloons of -850,000 m 3 with payloads weighting about 1,000 Kg. Taking advantage of these facilities, project 'Bantar', with the goal to measure the atmospheric gamma-ray radiation in the Antartic Region, is under progress. (Author) [pt

Si Incorporation in InP Nanowires Grown by Au-Assisted Molecular Beam Epitaxy

Directory of Open Access Journals (Sweden)

Lorenzo Rigutti

2009-01-01

Full Text Available We report on the growth, structural characterization, and conductivity studies of Si-doped InP nanowires grown by Au-assisted molecular beam epitaxy. It is shown that Si doping reduces the mean diffusion length of adatoms on the lateral nanowire surface and consequently reduces the nanowire growth rate and promotes lateral growth. A resistivity as low as 5.1±0.3×10−5 Ω⋅cm is measured for highly doped nanowires. Two dopant incorporation mechanisms are discussed: incorporation via catalyst particle and direct incorporation on the nanowire sidewalls. The first mechanism is shown to be less efficient than the second one, resulting in inhomogeneous radial dopant distribution.

Bestimmung des Bodenreibungsbeiwertes und der Oberflächenreibung eisbedeckter Wasserflächen im Meiningenstrom der Darß-Zingster Boddenkette und Anwendung auf vertikal integrierte hydronumerische Modelle

OpenAIRE

Schönfeldt, Hans-Jürgen; Raabe, Armin; Baudler, Henning

2016-01-01

In einem hydronumerischen Modell zur Prognose des Strömungs- und Wasserstandsfeldes flacher Gewässer wird eine auf der Turbulenztheorie basierende Tiefenkorrektur für den Bodenreibungsbeiwertwert eingeführt und auf der Basis von Berechnungen für die DarßZingster Boddenkette überprüft. Für einen ausgewählten Meßpunkt der Darß-Zingster Boddenkette wurde der Reibungsbeiwert sowohl am Boden als auch unter einer Eisschicht experimentell bestimmt. Die Auswirkungen einer Tiefenkorrektur des Reibungs...

Design of integrated optics all-optical label swappers for spectral amplitude code label swapping optical packet networks on active/passive InP technology

NARCIS (Netherlands)

Habib, C.; Munoz, P.; Leijtens, X.J.M.; Chen, Lawrence; Smit, M.K.; Capmany, J.

2009-01-01

In this paper the designs of optical label swapper devices, for spectral amplitude coded labels, monolithically integrated on InP active/passive technology are pre sented. The devices are based on cross-gain modulation in a semiconductor optical amplifier. Multi-wavelength operation is enabled by

Etch Pit Studies of II-VI-Wide Bandgap Semiconductor Materials ZnSe, ZnCdSe, and ZnCdMgSe Grown on InP

National Research Council Canada - National Science Library

Semendy, Fred

1999-01-01

Etch pit density (EPD) determination studies have been conducted on II-VI semiconductor materials ZnSe, ZnCdSe, and ZnCdMgSe grown on InP surfaces for the first time by using various etching solutions under different...

Selective formation of porous layer on n-type InP by anodic etching combined with scratching

International Nuclear Information System (INIS)

Seo, Masahiro; Yamaya, Tadafumi

2005-01-01

The selective formation of porous layer on n-type InP (001) surface was investigated by using scratching with a diamond scriber followed by anodic etching in deaerated 0.5M HCl. Since the InP specimen was highly doped, the anodic etching proceeded in the dark. The potentiodynamic polarization showed the anodic current shoulder in the potential region between 0.8 and 1.3V (SHE) for the scratched area in addition to the anodic current peak at 1.7V (SHE) for the intact area. The selective formation of porous layer on the scratched are was brought by the anodic etching at a constant potential between 1.0 and 1.2V (SHE) for a certain time. The nucleation and growth of etch pits on intact area, however, took place when the time passed the critical value. The cross section of porous layer on the scratched area perpendicular to the [1-bar 10] or [110] scratching direction had a V-shape, while the cross section of porous layer on the scratched area parallel to the [1-bar 10] or [110] scratching direction had a band structure with stripes oriented to the [1-bar 11] or [11-bar 1] direction. Moreover, nano-scratching at a constant normal force in the micro-Newton range followed by anodic etching showed the possibility for selective formation of porous wire with a nano-meter width

Selective formation of porous layer on n-type InP by anodic etching combined with scratching

Energy Technology Data Exchange (ETDEWEB)

Seo, Masahiro [Graduate School of Engineering, Hokkaido University, Kita-13 Jo, Nishi-8 Chome, Kita-ku, Sapporo 060-8628 (Japan)]. E-mail: seo@elechem1-mc.eng.hokudai.ac.jp; Yamaya, Tadafumi [Graduate School of Engineering, Hokkaido University, Kita-13 Jo, Nishi-8 Chome, Kita-ku, Sapporo 060-8628 (Japan)

2005-11-10

The selective formation of porous layer on n-type InP (001) surface was investigated by using scratching with a diamond scriber followed by anodic etching in deaerated 0.5M HCl. Since the InP specimen was highly doped, the anodic etching proceeded in the dark. The potentiodynamic polarization showed the anodic current shoulder in the potential region between 0.8 and 1.3V (SHE) for the scratched area in addition to the anodic current peak at 1.7V (SHE) for the intact area. The selective formation of porous layer on the scratched are was brought by the anodic etching at a constant potential between 1.0 and 1.2V (SHE) for a certain time. The nucleation and growth of etch pits on intact area, however, took place when the time passed the critical value. The cross section of porous layer on the scratched area perpendicular to the [1-bar 10] or [110] scratching direction had a V-shape, while the cross section of porous layer on the scratched area parallel to the [1-bar 10] or [110] scratching direction had a band structure with stripes oriented to the [1-bar 11] or [11-bar 1] direction. Moreover, nano-scratching at a constant normal force in the micro-Newton range followed by anodic etching showed the possibility for selective formation of porous wire with a nano-meter width.

Wide bandgap, strain-balanced quantum well tunnel junctions on InP substrates

International Nuclear Information System (INIS)

Lumb, M. P.; Yakes, M. K.; Schmieder, K. J.; Affouda, C. A.; Walters, R. J.; González, M.; Bennett, M. F.; Herrera, M.; Delgado, F. J.; Molina, S. I.

2016-01-01

In this work, the electrical performance of strain-balanced quantum well tunnel junctions with varying designs is presented. Strain-balanced quantum well tunnel junctions comprising compressively strained InAlAs wells and tensile-strained InAlAs barriers were grown on InP substrates using solid-source molecular beam epitaxy. The use of InAlAs enables InP-based tunnel junction devices to be produced using wide bandgap layers, enabling high electrical performance with low absorption. The impact of well and barrier thickness on the electrical performance was investigated, in addition to the impact of Si and Be doping concentration. Finally, the impact of an InGaAs quantum well at the junction interface is presented, enabling a peak tunnel current density of 47.6 A/cm 2 to be realized.

Energy and orientation dependence of electron-irradiation-induced defects in InP

International Nuclear Information System (INIS)

Sibille, A.; Suski, J.; LeRoux, G.

1984-01-01

The concentration of several electron-irradiation-induced deep defect levels in InP has been measured by deep-level transient spectroscopy (DLTS) as a function of electron energy. The dominant centers exhibit a threshold at about 100 keV, which clearly points to a primary production event by electron--phosphorus-atom collision. This unambiguous determination allowed a test of the recently proposed orientation dependence technique to find the nature of the sublattice involved in the collision process for III-V compounds. A good quantitative agreement is obtained with a hard-sphere model for secondary collisions if disorientation of the beam in the sample is taken into account. Other traps exhibit higher thresholds which correspond either to indium-atom displacements or to the involvement of secondary collisions in the production event

Wide bandgap, strain-balanced quantum well tunnel junctions on InP substrates

Energy Technology Data Exchange (ETDEWEB)

Lumb, M. P. [The George Washington University, Washington, DC 20037 (United States); US Naval Research Laboratory, Washington, DC 20375 (United States); Yakes, M. K.; Schmieder, K. J.; Affouda, C. A.; Walters, R. J. [US Naval Research Laboratory, Washington, DC 20375 (United States); González, M.; Bennett, M. F. [Sotera Defense Solutions, Annapolis Junction, Maryland 20701 (United States); US Naval Research Laboratory, Washington, DC 20375 (United States); Herrera, M.; Delgado, F. J.; Molina, S. I. [University of Cádiz, 11510, Puerto Real, Cádiz (Spain)

2016-05-21

In this work, the electrical performance of strain-balanced quantum well tunnel junctions with varying designs is presented. Strain-balanced quantum well tunnel junctions comprising compressively strained InAlAs wells and tensile-strained InAlAs barriers were grown on InP substrates using solid-source molecular beam epitaxy. The use of InAlAs enables InP-based tunnel junction devices to be produced using wide bandgap layers, enabling high electrical performance with low absorption. The impact of well and barrier thickness on the electrical performance was investigated, in addition to the impact of Si and Be doping concentration. Finally, the impact of an InGaAs quantum well at the junction interface is presented, enabling a peak tunnel current density of 47.6 A/cm{sup 2} to be realized.

A 311-GHz Fundamental Oscillator Using InP HBT Technology

Science.gov (United States)

Gaier, Todd; Fung, King Man; Samoska, Lorene; Radisic, Vesna; Sawdai, Donald; Scott, Dennis; Deal, W.R.

2010-01-01

This oscillator uses a single-emitter 0.3- m InP heterojunction bipolar transistor (HBT) device with maximum frequency of oscillation (fmax) greater than 500 GHz. Due to high conductor and substrate losses at submillimeterwave frequencies, a primary challenge is to efficiently use the intrinsic device gain. This was done by using a suitable transmission-line media and circuit topology. The passive components of the oscillator are realized in a twometal process with benzocyclobutene (BCB) used as the primary transmission line dielectric. The circuit was designed using microstrip transmission lines. The oscillator is implemented in a common-base topology due to its inherent instability, and the design includes an on-chip resonator, outputmatching circuitry, and an injection-locking port, the port being used to demonstrate the injection-locking prin ciple. A free-running frequency of 311.6 GHz has been measured by down-converting the signal. Ad di tionally, injection locking has been successfully demonstrated with up to 17.8 dB of injection-locking gain. The injection-locking reference signal is generated using a 2 20 GHz frequency synthesizer, followed by a doubler, active tripler, a W-band amplifier, and then a passive tripler. Therefore, the source frequency is multiplied 18 times to obtain a signal above 300 GHz that can be used to injection lock the oscillator. Measurement shows that injection locking has improved the phase noise of the oscillator and can be also used for synchronizing a series of oscillators. A signal conductor is implemented near the BCP -InP interface and the topside of the BCB layer is fully metallized as a signal ground. Because the fields are primarily constrained in the lower permittivity BCB region, this type of transmission line is referred to as an inverted microstrip. In addition, both common-emitter and commonbase circuits were investigated to determine optimum topology for oscillator design. The common -base topology required smaller