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Sample records for auf inp basierenden

  1. Studies on semiconductors based on InP with sub-ps response times; Untersuchungen an auf InP basierenden Halbleitern mit sub-ps Responsezeiten

    Biermann, K.

    2007-06-28

    The present work describes investigation of new material concepts accomplished using molecular-beam-epitaxy (MBE) growth for application in ultra-fast photonic components. Nominally undoped and Be doped GaInAs/AlInAs multiple-quantumwell structures (MQW) were grown by MBE at growth temperatures down to 100 C (LT-MBE) on semi-insulating InP substrates. Crystalline, electric and optical properties of as-grown and annealed structures were investigated. Energy states near the conduction band of GaInAs determine the electrical and optical properties of LT-MQWs. The dynamics of charge carrier relaxation was studied by means of pump and probe experiments. Measurements of the differential transmission when excited by an additional cw laser and measurements utilizing two closely sequenced pump pulses support the capability of Be doped as-grown (annealed) LT GaInAs/AlInAs MQW structures for use in optical switches at switching frequencies in the 1 Tbit/s (250 Gbit/s) range. The voltage-induced change of interband transmission of InP based quantumcascade-lasers (QCL) during pulsed mode operation was analyzed by means of 8 band k.p calculations. The impacts of varying charge carrier distributions and of electrically heated samples can be neglected compared to the dominating effect of the electrical field on the interband transmission. The impact of MBE growth parameters on the interface quality of AlAsSb/ GaInAs heterostructures were determined by means of Hall measurements, temperature- and intensity-dependent PL measurements and spectral measurements of the interband- and intersubband-absorption. The impact of In segregation and Sb diffusion on the intersubband absorption was analyzed on the basis of bandstructure calculations. Intersubband transitions at wavelengths of about 1.8 {mu}m (1.55 {mu}m) were successfully achieved in MQW (coupled QW) structures. (orig.)

  2. Entwicklung und Evaluierung eines auf dem Stellungsfeldermodell basierenden syntaktischen Annotationsverfahrens für Lernerkorpora innerhalb einer Mehrebenen-Architektur mit Schwerpunkt auf schriftlichen Texten fortgeschrittener Deutschlerner

    Doolittle, Seanna

    2008-01-01

    Die Arbeit zeigt exemplarisch die Möglichkeiten, die die Mehrebenen-Korpusarchitektur bei der Annotation von „standard-“ und „nicht standardsprachlichen“ Äußerungen in einem gemeinsamen Korpus bieten. // Konkret beschäftigt sie sich mit der Entwicklung und Evaluierung eines auf dem Stellungsfeldermodell basierenden syntaktischen Annotationsverfahrens für Lernerkorpora, bestehend aus schriftlichen Texten fortgeschrittener Deutschlerner, innerhalb einer Mehrebenen-Architektur. Die Felderannotat...

  3. The AREVA integrated and sustainable concept of fatigue design, monitoring and re-assessment; AREVA FATIGUE CONCEPT - ein geschlossenes Konzept zur Verfolgung und Optimierung der auf Ermuedung basierenden Schaedigungseffekte von thermisch und mechanisch beanspruchten Kraftwerksbauteilen

    Begholz, Steffen; Rudolph, Juergen [AREVA NP GmbH, Erlangen (Germany)

    2008-07-01

    Prevention of fatigue damage of components is an important topic with respect to safety and availability of a nuclear power plant. The issue of fatigue monitoring should be of primary interest throughout service life. Based on the changing general framework, i.e. planning of new plants with a projected lifetime of 60 years and the lifetime extension of existing plants AREVA is focussing R and D activities on improved detection methods. Primary objective is the realistic determination of the actual usage level of reactor components. The fatigue monitoring is supposed to enhance cost optimization and minimize inspection frequency. Fatigue monitoring should be implemented at the beginning of start-up period since the high loads during this phase introduce a significant contribution to the usage level. AREVA recommends the use of the FAMOS (fatigue monitoring system) for the assessment of the realistic transient loads and the data processing with respect to fatigue evaluation. Every 10 years the actual usage levels should be evaluated in detail according to the standards, based on measured load data. The fatigue evaluation is usually performed using finite element analyses taking into account the transient temperature loads at the component, dependent on the component demands based on elastic or elasto-plastic material behaviour. Potential problematic areas can be identified reliably. Direct measurement of fatigue damage, refined analysis concepts (short crack fracture mechanics, and ratcheting simulation) are supposed to support the concept. [German] Die Vermeidung von Ermuedungsschaeden an Komponenten der nuklearen Kraftwerkstechnik ist ein wichtiges Thema in Hinblick auf die Aufrechterhaltung der Anlagensicherheit sowie auf die Erhoehung der Verfuegbarkeit. Das Thema Ermuedungsueberwachung sollte somit waehrend der gesamten Laufzeit eines Kraftwerkes mit hoher Aufmerksamkeit verfolgt werden. Vor diesem Hintergrund und den sich aendernden Rahmenbedingungen, wie z

  4. When is an INP not an INP?

    Simpson, Emma; Connolly, Paul; McFiggans, Gordon

    2016-04-01

    Processes such as precipitation and radiation depend on the concentration and size of different hydrometeors within clouds therefore it is important to accurately predict them in weather and climate models. A large fraction of clouds present in our atmosphere are mixed phase; contain both liquid and ice particles. The number of drops and ice crystals present in mixed phase clouds strongly depends on the size distribution of aerosols. Cloud condensation nuclei (CCN), a subset of atmospheric aerosol particles, are required for liquid drops to form in the atmosphere. These particles are ubiquitous in the atmosphere. To nucleate ice particles in mixed phase clouds ice nucleating particles (INP) are required. These particles are rarer than CCN. Here we investigate the case where CCN and INPs are in direct competition with each other for water vapour within a cloud. Focusing on the immersion and condensation modes of freezing (where an INP must be immersed within a liquid drop before it can freeze) we show that the presence of CCN can suppress the formation of ice. CCN are more hydrophilic than IN and as such are better able to compete for water vapour than, typically insoluble, INPs. Therefore water is more likely to condense onto a CCN than INP, leaving the INP without enough condensed water on it to be able to freeze in the immersion or condensation mode. The magnitude of this suppression effect strongly depends on a currently unconstrained quantity. Here we refer to this quantity as the critical mass of condensed water required for freezing, Mwc. Mwc is the threshold amount of water that must be condensed onto a INP before it can freeze in the immersion or condensation mode. Using the detailed cloud parcel model, Aerosol-Cloud-Precipiation-Interaction Model (ACPIM), developed at the University of Manchester we show that if only a small amount of water is required for freezing there is little suppression effect and if a large amount of water is required there is a

  5. Metallcluster auf dielektrischen Substraten

    Faber, Bernhard

    2011-01-01

    Es wird die Deposition von kleinen Natriumclustern auf einer Ar(001)-Schicht, die auf einer Metallunterlage aufliegt, simuliert. Dabei wird ein hierarchisches Modell aus zeitabhängiger DFT und Molekulardynamik verwendet. Die Valenzelektronen der Natriumatome werden im Kohn-Sham Schema mit Selbstwechselwirkungskorrektur behandelt. Die Wechselwirkung zwischen den Edelgasteilchen und den Natriumionen wird durch Atom-Atom-Potentiale beschrieben und die Ankopplung an die quantenmechanischen Elektr...

  6. Biologische Angriffe auf Mauerwerke

    Schober, G.; Kort, H.S.M.; Balen, van K.; Bronswijk, van J.E.M.H.

    1995-01-01

    Zusammenfassung: Biologische Angriffe durch Mauerwerkbewuchs führen zu Schadensbildern, die durch Festigkeitsverlust, Formveränderungen oder Farbveränderungen auf den Oberflächen charakterisiert sind. Allerdings sind nur einige spezialisierte Pflanzen an die extremen Bedingungen dieser Lebensräume

  7. Ein Recht auf Medienkompetenz?

    Christine Trültzsch-Wijnen

    2017-03-01

    Full Text Available In diesem Beitrag wird ausgehend von der Allgemeinen Erklärung der Menschenrechte bzw. der Universal Declaration of Human Rights (UDHR sowie der UN-Kinderrechtskonvention bzw. der United Nations Convention on the Rights of the Child (UNCRC die Frage nach einem Recht auf Medienkompetenz gestellt. Besonderer Fokus liegt dabei auf der UN-Kinderrechtskonvention, welche die Menschenrechte nicht nur auf die Bedürfnisse Heranwachsender herunterbricht, sondern diesen darüber hinausgehend auch besondere Schutz- und Beteiligungsrechte sowie Rechte auf Entwicklung und Förderung einräumt. Based on the Universal Declaration of Human Rights (UDHR as well as the United Nations Convention on the Rights of the Child (UNCRC this paper questions whether media literacy could be defined as a childrens' right per se. This analysis is particularly focussed on the UNCRC as they transfer the UDHR to the needs of children and adolescents and beyond that acknowledge their special rights of protection, participation and provision.

  8. Ionospheric research at INPE

    Abdu, M.A.

    1984-01-01

    Ionosphere investigations at INPE are mainly concerned with the problems of equatorial and tropical ionospheres and their electrodynamic coupling with the high latitude ionosphere. Present research objectives include investigations in the following specific areas: equatorial ionospheric plasma dynamics; plasma irregularity generation and morphology, and effects on space borne radar operations; ionospheric response to disturbance dynamo and magnetospheric electric fields; aeronomic effcts of charged particle precipitation in the magnetic anomaly, etc. These problems are being investigated using experimental datacollected from ionospheric diagnostic instruments being operated at different locations in Brazil. These instruments are: ionosondes, VHF electronic polarimeters, L-band scintillation receivers, airglow photometers, riometers and VLF receivers. A brief summary of the research activities and some recnet results will be presented. (Author) [pt

  9. Upper atmosphere research at INPE

    Clemesha, B.R.

    1984-01-01

    Upper atmosphere research at INPE is mainly concerned with the chemistry and dynamics of the stratosphere, upper mesosphere and lower thermosphere, and the middle thermosphere. Experimental work includes lidar observations of the stratospheric aerosol, measurements of stratospheric ozone by Dobson spectrophotometers and by balloon and rocket-borne sondes, lidar measurements of atmospheric sodium, and photometric observations of O, O 2 , OH and Na emissions, including interferrometric measurements of the OI6300 emission for the purpose of determing thermospheric winds and temperature. The airglow observations also include measurements of a number of emissions produced by the precipitation of energetic neutral particles generated by charge exchange in the ring current. Some recent results of INPE's upper atmosphere program are presented. (Author) [pt

  10. Views on information literacy / Sichten auf Informationskompetenz

    Hapke, Thomas

    2017-01-01

    Poster (in English and German language) illustrating different views on information literacy. Poster in deutscher und englischer Sprache zur Veranschaulichung verschiedener Sichten auf Informationskompetenz.

  11. Heteroepitaxially grown InP solar cells

    Weinberg, I.; Swartz, C.K.; Brinker, D.J.; Wilt, D.M.

    1990-01-01

    Although they are significantly more radiation resistant than either Si or GaAs solar cells, their high wafer cost presents a barrier to the widespread use of InP solar cells in space. For this reason, the authors have initiated a program aimed at producing high efficiency, radiation resistant solar cells processed from InP heteroepitaxially grown on cheaper substrates. The authors' objective is to present the most recent results emanating from this program together with the results of their initial proton irradiations on these cells. This paper reports that InP cells were processed from a 4 micron layer of InP, grown by OMCVD on a silicon substrate, with a 0.5 micron buffer layer between the InP directly grown on a GaAs substrate. Initial feasibility studies, in a Lewis sponsored program at the Spire corporation, resulted in air mass zero efficiencies of 7.1% for the former cells and 9.1% for the latter. These initial low efficiencies are attributed to the high dislocation densities caused by lattice mismatch. The authors' preirradiation analysis indicates extremely low minority carrier diffusion lengths, in both cell base and emitter, and high values of both the diffusion and recombination components of the diode reverse saturation currents. Irradiation by 10 MeV protons, to a fluence of 10 13 cm -2 , resulted in relatively low degradation in cell efficiency, short circuit current and open circuit voltage

  12. Modeling of a completely on renewable energy based power generation in 2050 in autonomous, decentralized structures; Modellierung einer vollstaendig auf erneuerbaren Energien basierenden Stromerzeugung im Jahr 2050 in autarken, dezentralen Strukturen

    Peter, Stefan

    2013-09-15

    The German Federal Environmental Agency (Umweltbundesamt, UBA) has developed three radically different scenarios of a future electricity supply entirely based on renewable sources in Germany by 2050. This study investigates the technical and ecological feasibility for one of these scenarios, the ''Local Energy Autarky'' scenario, by means of computer based simulation with a high spatial and temporal resolution. The scope of this scenario is restricted to small-scale decentralized energy systems which satisfy their own power demand without being connected with each other or with outside suppliers, i.e. without electricity imports. Relying only on locally available renewable energy sources to cover the electricity demand, makes electricity storage a necessity within the simulation model. The model itself consists of different modules representing electricity demand (e.g. for households, commerce and industry), power generation of different renewable technologies, and meteorological data, such as solar irradiation, wind speed, and outside temperatures. Various basic assumptions were made with regard to future developments such as energy efficiency. The simulations were applied exemplarily to a rural community with a low population density and a town district (high population and building density), each with and without trade/industry and each at a location in northern and in southern Germany, which are representative of the different meteorological conditions affecting the power generation from renewable sources such as wind and solar. Several variations were applied to the system, e.g. with regard to the share of electricity powered private vehicles or the installed generation capacities per technology. The simulation results show that the electricity demand of private households plus the demand for a complete shift to (private) e-mobility can be covered by the assumed locally available potentials for photovoltaics and wind energy, but only for the rural community and with an immense amount of storage required. If compared to the northern location the location in south Germany requires additional effort concerning the installed capacity for both electricity generation as well as storage. With the given assumptions for this study, however, it is not possible at all to establish a self-sufficient electricity supply for the town district. This is also true for the rural community if the electricity demand for commerce and industry statistically corresponding to the number of inhabitants is taken into account. With respect to these results it can be concluded that besides a local renewable generation the national electricity transport network is an important component for achieving a 100 percent renewable energy supply in Germany. On the one hand the large-scale balancing between fluctuating renewable energy feed-in and load can be beneficial. On the other hand potentials will have to be tapped where they exist. Regions with ''excess potential'' such as north Germany with its high wind potentials will have to cater to regions with a ''shortfall'' such as the industrial centers of electricity consumption in southern and western Germany. Thus, the concept sketched in the ''Local Energy Autarky'' scenario may be a feasible option in particular cases under favorable circumstances. According to the findings in this study, however, it presents no viable alternative for a 100% renewables-based electricity supply, at least not for the whole of Germany. Nevertheless, local generation can contribute a substantial share to a power supply entirely based on renewable energy sources as shown in the UBA ''Regions Network'' scenario.

  13. Budker INP in the LHC Machine (2)

    2001-01-01

    The main BINP contributions to the LHC machine are magnets for transfer lines (26 MCHF) and bus- bar sets (23 MCHF). Budker INP is also responsible for construction of some other LHC magnets and vacuum parts. In total, the contribution to the LHC machine will reach about 90 MCHF.

  14. Thermal diffusion in nanostructured porous InP

    Srinivasan, R.; Ramachandran, K.

    2008-01-01

    Nanostructured porous InP samples were prepared by electrochemical anodic dissolution of InP for various current densities and etching periods. The samples were characterized by SEM and photoluminescence (PL) where a blue shift was observed in PL. Thermal properties studies by photoacoustic (PA) spectroscopy revealed one order decrease in thermal conductivity of porous InP compared to the bulk. Further it is shown that the thermal conductivity of porous InP decreases with decrease in size of the particles. (author)

  15. High resistivity in InP by helium bombardment

    Focht, M.W.; Macrander, A.T.; Schwartz, B.; Feldman, L.C.

    1984-01-01

    Helium implants over a fluence range from 10 11 to 10 16 ions/cm 2 , reproducibly form high resistivity regions in both p- and n-type InP. Average resistivities of greater than 10 9 Ω cm for p-type InP and of 10 3 Ω cm for n-type InP are reported. Results are presented of a Monte Carlo simulation of helium bombardment into the compound target InP that yields the mean projected range and the range straggling

  16. InP Solar Cells and their Flight Experiments

    TAKAHASHI, Keiji; YAMAGUCHI, Masafumi; TAKAMOTO, Tatsuya; IKEGAMI, Shingo; OHNISHI, Akira; HAYASHI, Tomonao; USHIROKAWA, Akio; KOHBATA, Masahiko; ARAI, Hidetoshi; HASHIMOTO, Katsumasa; ORH, Takeshi; OKAZAKI, Hitoshi; TAKAMURA, Hideto; URA, Mitsuru; OHMORI, Masamichi

    1992-01-01

    We have developed high-efficiency homojunction 1 cm × 2 cm InP space solar cells by diffusing In_2S_3 into p type InP substrates and investigated their fundamental characteristics such as electrical and mechnical characteristics and thermal properties. On the radiation resistant mechanism of InP cells, we have studied InP cells fabricated at NTT Laboratories and found superior properties such as room temperture annealing and minority carrier injection enhanced annealing phenomena for radiatio...

  17. Globalisierung der Wirtschaft : Auswirkungen auf lokale Unternehmen

    Greve, Rolf

    2000-01-01

    Inhalt: 1 Globalisierung der Wirtschaft; 1.1 Die Globalisierung als Prozeß; 1.2 Gründe für die fortschreitende Globalisierung; 1.3 Eine wirtschaftswissenschaftliche Interpretation der Globalisierung; 2 Auswirkungen der Globalisierung auf lokale Unternehmen; 2.1 Betroffenheit des Mittelstandes; 2.2 Erfahrungen mit der Globalisierung – Zwei Beispiele; 3 Strategien für den Mittelstand als Antwort auf die Globalisierung; 3.1 Strategie der Hidden Champions; 3.2 Strategie der Kooperation

  18. Indium phosphide (InP) for optical interconnects

    Lebby, M.; Ristic, S.; Calabretta, N.; Stabile, R.; Tekin, T.; Pitwon, R.; Håkansson, A.; Pleros, N.

    2016-01-01

    We present InP as the incumbent technology for data center transceiver and switching optics. We review the most popular InP monolithic integration approaches in light of photonic integration being recognized as an increasingly important technology for data center optics. We present Multi-Guide

  19. Peptides for functionalization of InP semiconductors.

    Estephan, Elias; Saab, Marie-belle; Larroque, Christian; Martin, Marta; Olsson, Fredrik; Lourdudoss, Sebastian; Gergely, Csilla

    2009-09-15

    The challenge is to achieve high specificity in molecular sensing by proper functionalization of micro/nano-structured semiconductors by peptides that reveal specific recognition for these structures. Here we report on surface modification of the InP semiconductors by adhesion peptides produced by the phage display technique. An M13 bacteriophage library has been used to screen 10(10) different peptides against the InP(001) and the InP(111) surfaces to finally isolate specific peptides for each orientation of the InP. MALDI-TOF/TOF mass spectrometry has been employed to study real affinity of the peptide towards the InP surfaces. The peptides serve for controlled placement of biotin onto InP to bind then streptavidin. Our Atomic Force Microscopy study revealed a total surface coverage of molecules when the InP surface was functionalized by its specific biotinylated peptide (YAIKGPSHFRPS). Finally, fluorescence microscopy has been employed to demonstrate the preferential attachment of the peptide onto a micro-patterned InP surface. Use of substrate specific peptides could present an alternative solution for the problems encountered in the actually existing sensing methods and molecular self-assembly due to the unwanted unspecific interactions.

  20. Thermal diffusion in nanostructured porous InP

    Nanostructured porous InP samples were prepared by electrochemical anodic dissolution of InP for various current densities and etching periods. The samples were characterized by SEM and photoluminescence (PL) where a blue shift was observed in PL. Thermal properties studied by photoacoustic (PA) spectroscopy ...

  1. Epitaxial growth of InP on SI by MOCVD

    Konushi, F.; Seki, A.; Kudo, J.; Sato, H.; Kakimoto, S.; Fukushima, T.; Kubota, Y.; Koba, M.

    1988-01-01

    The authors have studied the heteroepitaxial growth of InP on large diameter Si substrates using MOCVD. A new MOCVD system with four inch wafer size capability was utilized in the growth. Single domain InP films have been successfully grown on four inch Si substrates by using a new heterostructure with a thin GaAs intermediate layer. In this paper, the authors describe the crystalline quality and residual stress of InP epilayers, estimated by etch pit density and x-ray diffraction, respectively. The authors also reports on the reduction of EPD by post-growth annealing

  2. Historismus in der Erwachsenenbildung und auf Reisen

    Glaubitz, Gerald

    2008-01-01

    Historismus in der Erwachsenenbildung und auf Reisen This article deals with the area of adult education in connection with educational trips, a topic painfully neglected by the didactics of history so far. After outlining the latest developments in research and the relevance of the object of research, the dimension of the concept of 'histourism' will be examined more closely. A short but clear distinction from other academic disciplines such as tourism research or pedagogy of travelling w...

  3. Progress in InP solar cell research

    Weinberg, I.; Brinker, D.J.

    1988-01-01

    Progress, in the past year, in InP solar cell research is reviewed. Small area cells with AMO, total area efficiencies of 18.8 percent were produced by OMCVD and Ion Implantation. Larger area cells (2 and 4 sq cm) were processed on a production basis. One thousand of the 2 sq cm cells will be used to supply power to a small piggyback lunar orbiter scheduled for launch in February 1990. Laboratory tests of ITO/InP cells, under 10 MeV proton irradiation, indicate radiation resistance comparable to InP n/p homojunction cells. Computer modeling studies indicate that, for identical geometries and dopant concentrations, InP solar cells are significantly more radiation resistant than GaAs under 1 MeV electron irradiation. Additional computer modeling calculations were used to produce rectangular and circular InP concentrator cell designs for both the low concentration SLATS and higher concentration Cassegrainian Concentrators

  4. InP nanopore arrays for photoelectrochemical hydrogen generation.

    Li, Qiang; Zheng, Maojun; Zhang, Bin; Zhu, Changqing; Wang, Faze; Song, Jingnan; Zhong, Miao; Ma, Li; Shen, Wenzhong

    2016-02-19

    We report a facile and large-scale fabrication of highly ordered one-dimensional (1D) indium phosphide (InP) nanopore arrays (NPs) and their application as photoelectrodes for photoelectrochemical (PEC) hydrogen production. These InP NPs exhibit superior PEC performance due to their excellent light-trapping characteristics, high-quality 1D conducting channels and large surface areas. The photocurrent density of optimized InP NPs is 8.9 times higher than that of planar counterpart at an applied potential of +0.3 V versus RHE under AM 1.5G illumination (100 mW cm(-2)). In addition, the onset potential of InP NPs exhibits 105 mV of cathodic shift relative to planar control. The superior performance of the nanoporous samples is further explained by Mott-Schottky and electrochemical impedance spectroscopy ananlysis.

  5. InP Heterojunction Bipolar Transistor Amplifiers to 255 GHz

    Radisic, Vesna; Sawdai, Donald; Scott, Dennis; Deal, William; Dang, Linh; Li, Danny; Cavus, Abdullah; To, Richard; Lai, Richard

    2009-01-01

    Two single-stage InP heterojunction bipolar transistor (HBT) amplifiers operate at 184 and 255 GHz, using Northrop Grumman Corporation s InP HBT MMIC (monolithic microwave integrated circuit) technology. At the time of this reporting, these are reported to be the highest HBT amplifiers ever created. The purpose of the amplifier design is to evaluate the technology capability for high-frequency designs and verify the model for future development work.

  6. Effects of the electron beam on InP(100)

    Bouslama, M.; Jardin, C.; Ghamnia, M.

    1996-01-01

    Auger Electron Spectroscopy (AES) is performed to monitor the InP(100) surface evolution while it is irradiated by an electron beam of 5 KeV energy and 10 -3 A.cm -2 current density. A charge phenomenon appears during the irradiation of sputter-cleaned InP(100) by Ar + at low energy (500 eV). The deposition of phosphorus or antimony at room temperature on cleaned InP(100) is a good way of preventing this charging problem. This is also achieved by the growth of stoichiometric indium phosphide on InP(100) substrate, from an injection of phosphine and indium trimethyl whose ratio V/III is of 50, in a MOCVD (Metal Organic Chemical Vapor Deposition) reactor. The electron beam even acts to stimulate oxidation of the stoichiometric InP(100) surface involving on the top layers, into a well defined oxide such as InPO 4 or a contamination layer composed of carbon and oxygen. The partial pressure in the spectrometer is about 10 -9 Torr. The incident electrons produce breaking of (In-P) chemical bonds so that the resulting indium takes part in the oxidation process. The phosphorus is thought to be desorbed from the surface. (author)

  7. Macht auf das Tor! - Opens the gate!

    Claudemir de Quadros

    2011-09-01

    Full Text Available Macht auf das Tor! (Abra o portão foi publicado, possivelmente, na primeira metade do século 20. Editado por Max Dirkschneider, Raimund Heuler e Felix Oberborbeck, apresenta músicas, rimas, piadas, jogos e canções.A edição apresentada nesse espaço é de um livro que pertence à família de Carolina Drebes, estudante do curso de Pedagogia do Centro Universitário Franciscano, Santa Maria/RS.

  8. Auf dem Weg zur Digitalen Bibliothek

    Degkwitz, Andreas; Frank, Nina; Hendrix, Imma; Pfeifenberger, Regina; Tollkühn, Katharina

    2013-01-01

    Nichts hat den Lebensalltag in den vergangenen zwanzig Jahren mehr verändert als das Internet, das uns mit Handys, Laptops, Net- und Notebooks, Smartphones und Tablet-PCs allgegenwärtig begleitet. Das iPhone bietet den permanenten Zugang zu weltweit verfügbarer Information in der Westentasche und hat damit einen völlig neuen Umgang mit Interaktion und Informationsrecherche herbeigeführt. Der tief greifende Wandel hat sich massiv auf die Weiterentwicklung der Serviceprofile wissenschaftl...

  9. Wirksamkeit der Hypnose auf Schmerzen bei Erwachsenen: systematische Literaturreview

    Pfaffen, Céline; Z`Brun-Schnyder, Silvia

    2018-01-01

    Das Ziel dieser systematischen Literaturreview ist es, die Wirksamkeit der Hypnose auf Schmerzen bei Erwachsenen zu überprüfen. Daraus ergibt sich folgende Forschungsfrage: "Wie wird die Wirksamkeit der Hypnose auf Schmerzen bei Erwachsenen in der wissenschaftlichen Literatur beschrieben?"

  10. Heterostructures (CaSrBa)F2 on InP for Optoelectronics

    Pyshkin, Sergei

    1995-01-01

    Temperature-reduced MBE growth of group II-a fluorides onto InP( 100) surface as well as optimal cleaning and passivation procedures for InP wafers have been newly developed taking into account exsisting literature data...

  11. Interfacial reactions between thin films of zinc and (100) InP

    Kaminska, E.; Piotrowska, A.; Barcz, A.; Mizera, E.; Dynowska, E.

    1995-01-01

    The effects of interaction between thin films of Zn and (100)InP were studied with secondary ion mass spectrometry, X-ray diffraction and transmission electron microscopy. Zn was found to penetrate the native oxide on InP surface during deposition and to form an ohmic contact when deposited on highly doped n-type InP. Heat treatment causes the formation of Zn 3 P 2 phase lattice matched to InP. (author)

  12. Long-Term INP Measurements within the BACCHUS project

    Schrod, Jann; Bingemer, Heinz; Curtius, Joachim

    2016-04-01

    The European research project BACCHUS (Impact of Biogenic versus Anthropogenic emissions on Clouds and Climate: towards a Holistic UnderStanding) studies the interactions between aerosols, clouds and the climate system, and tries to reconstruct pre-industrial aerosol and cloud conditions from data collected in pristine environments. The number concentration of Ice Nucleating Particles (INP) is an important, yet scarcely known parameter. As a partner of Work package 1 of BACCHUS we began in September 2014 to operate a globally spanned network of four INP sampling stations, which is the first of its kind. The stations are located at the ATTO observatory in the Brazilian Rainforest, the Caribbean Sea (Martinique), the Zeppelin Observatory at Svalbard in the Arctic, and in central Europe (Germany). Samples are collected routinely every day or every few days by electrostatic precipitation of aerosol particles onto Si substrates. The samples are stored in petri-slides, and shipped to our laboratory in Frankfurt, Germany. The number of ice nucleating particles on the substrate is analyzed in the isothermal static diffusion chamber FRIDGE by growing ice on the INP and photographing and counting the crystals. The measurements in the temperature range from -20°C to -30°C and relative humidities of 100-135% (with respect to ice) address primarily the deposition/condensation nucleation modes. Here we present INP and supporting aerosol data from this novel INP network for the first time.

  13. Effects of impurities on radiation damage in InP

    Yamaguchi, M.; Ando, K.

    1986-01-01

    Strong impurity effects upon introduction and annealing behavior of radiation-induced defects in InP irradiated with 1-MeV electrons have been found. The main defect center of 0.37-eV hole trap H4 in p-InP, which must be due to a point defect, is annealed even at room temperature. Its annealing rate is found to be proportional to the 2/3 power of the preirradiation carrier concentration in InP. Moreover, the density of the hole trap H5 (E/sub v/+0.52 eV) in p-InP, which must be due to a point defect--impurity complex, increases with increase in the InP carrier concentration. These results suggest that the radiation-induced defects in InP must recover through long-range diffusion mediated by impurity atoms. A model is proposed in which point defects diffuse to sinks through impurities so as to disappear or bind impurities so as to form point defect--impurity complexes. In addition to the long-range diffusion mechanism, the possibility of charge-state effects responsible for the thermal annealing of radiation-induced defects in InP is also discussed

  14. Susceptor and proximity rapid thermal annealing of InP

    Katz, A.; Pearton, S.J.; Geva, M.

    1990-01-01

    This paper presents a comparison between the efficiency of InP rapid thermal annealing within two types of SiC-coated graphite susceptors and by using the more conventional proximity approach, in providing degradation-free substrate surface morphology. The superiority of annealing within a susceptor was clearly demonstrated through the evaluation of AuGe contact performance to carbon-implanted InP substrates, which were annealed to activate the implants prior to the metallization. The susceptor annealing provided better protection against edge degradation, slip formation and better surface morphology, due to the elimination of P outdiffusion and pit formation. The two SiC-coated susceptors that were evaluated differ from each other in their geometry. The first type must be charged with the group V species prior to any annealing cycle. Under the optimum charging conditions, effective surface protection was provided only to one anneal (750 degrees C, 10s) of InP before charging was necessary. The second contained reservoirs for provision of the group V element partial pressure, enabled high temperature annealing at the InP without the need for continual recharging of the susceptor. Thus, one has the ability to subsequentially anneal a lot of InP wafers at high temperatures without inducing any surface deterioration

  15. Summary of Workshop on InP: Status and Prospects

    Walters, R. J.; Weinberg, I.

    1994-01-01

    The primary objective of most of the programs in InP solar cells is the development of the most radiation hard solar cell technology. In the workshop, it was generally agreed that the goal is a cell which displays high radiation tolerance in a radiation environment equivalent to a 1 MeV electron fluence of about 10(exp 16)/sq cm. Furthermore, it is desired that the radiation response of the cell be essentially flat out to this fluence - i.e. that the power output of the cell not decrease from its beginning of life (BOL) value in this radiation environment. It was also agreed in the workshop that the manufacturability of InP solar cells needs to be improved. In particular, since InP wafers are relatively dense and brittle, alternative substrates need to be developed. Research on hetero-epitaxial InP cells grown on Si, Ge, and GaAs substrates is currently underway. The ultimate goal is to develop hetero-epitaxial InP solar cells using a cheap, strong, and lightweight substrate.

  16. A study of 1/f noise in InP grown by CBE

    Chen, X.Y.; Leijs, M.R.

    1996-01-01

    The origin of low-frequency noise in InP was studied experimentally by measuring the noise of InP layers grown by chemical beam epitaxy (CBE). Such InP layers are unintentionally doped, but of varying purity and always of n-type conductivity. We performed noise measurements at temperatures from 77

  17. Graphene enhanced field emission from InP nanocrystals.

    Iemmo, L; Di Bartolomeo, A; Giubileo, F; Luongo, G; Passacantando, M; Niu, G; Hatami, F; Skibitzki, O; Schroeder, T

    2017-12-08

    We report the observation of field emission (FE) from InP nanocrystals (NCs) epitaxially grown on an array of p-Si nanotips. We prove that FE can be enhanced by covering the InP NCs with graphene. The measurements are performed inside a scanning electron microscope chamber with a nano-controlled W-thread used as an anode. We analyze the FE by Fowler-Nordheim theory and find that the field enhancement factor increases monotonically with the spacing between the anode and the cathode. We also show that InP/p-Si junction has a rectifying behavior, while graphene on InP creates an ohmic contact. Understanding the fundamentals of such nanojunctions is key for applications in nanoelectronics.

  18. An improved large signal model of InP HEMTs

    Li, Tianhao; Li, Wenjun; Liu, Jun

    2018-05-01

    An improved large signal model for InP HEMTs is proposed in this paper. The channel current and charge model equations are constructed based on the Angelov model equations. Both the equations for channel current and gate charge models were all continuous and high order drivable, and the proposed gate charge model satisfied the charge conservation. For the strong leakage induced barrier reduction effect of InP HEMTs, the Angelov current model equations are improved. The channel current model could fit DC performance of devices. A 2 × 25 μm × 70 nm InP HEMT device is used to demonstrate the extraction and validation of the model, in which the model has predicted the DC I–V, C–V and bias related S parameters accurately. Project supported by the National Natural Science Foundation of China (No. 61331006).

  19. Radiation effects in heteroepitaxial InP solar cells

    Weinberg, I.; Curtis, H. B.; Swartz, C. K.; Brinker, D. J.; Vargas-Aburto, C.

    1993-01-01

    Heteroepitaxial InP solar cells, with GaAs substrates, were irradiated by 0.5 and 3 MeV protons and their performance, temperature dependency, and carrier removal rates determined as a function of fluence. The radiation resistance of the present cells was significantly greater than that of non-heteroepitaxial InP cells at both proton energies. A clear difference in the temperature dependency of V(sub oc), was observed between heteroepitaxial and homoepitaxial InP cells. The analytically predicted dependence of dV(sub oc)/dT on Voc was confirmed by the fluence dependence of these quantities. Carrier removal was observed to increase with decreasing proton energy. The results obtained for performance and temperature dependency were attributed to the high dislocation densities present in the heteroepitaxial cells while the energy dependence of carrier removal was attributed to the energy dependence of proton range.

  20. Synthesis of colloidal InP nanocrystal quantum dots

    Sirbu, L.; Gutul, T.; Todosiciuc, A.; Danila, M.; Muller, R.; Sarua, A.; Webster, R.; Tiginyanu, I.M.; Ursaki, V.

    2013-01-01

    InP nano dots with the diameter of 4-10 nm were synthesized using sol-gel method. The nano dot dimensions were obtained using TEM, and we found the d(111) spacing to be 0.328 nm which agrees within 3% of the literature value. Prepared nanoparticles where characterized then by Raman spectroscopy and Xray diffraction. Performed measurements confirm good crystalline quality of obtained InP particles, which can be used as a basis for THz emitters, LED, and OLED displays. (authors)

  1. Palladium nanoparticles on InP for hydrogen detection

    Zdansky Karel

    2011-01-01

    Full Text Available Abstract Layers of palladium (Pd nanoparticles on indium phosphide (InP were prepared by electrophoretic deposition from the colloid solution of Pd nanoparticles. Layers prepared by an opposite polarity of deposition showed different physical and morphological properties. Particles in solution are separated and, after deposition onto the InP surface, they form small aggregates. The size of the aggregates is dependent on the time of deposition. If the aggregates are small, the layer has no lateral conductance. Forward and reverse I-V characteristics showed a high rectification ratio with a high Schottky barrier height. The response of the structure on the presence of hydrogen was monitored.

  2. Optical phonon modes of wurtzite InP

    Gadret, E. G.; de Lima, M. M.; Madureira, J. R.; Chiaramonte, T.; Cotta, M. A.; Iikawa, F.; Cantarero, A.

    2013-03-01

    Optical vibration modes of InP nanowires in the wurtzite phase were investigated by Raman scattering spectroscopy. The wires were grown along the [0001] axis by the vapor-liquid-solid method. The A1(TO), E2h, and E1(TO) phonon modes of the wurtzite symmetry were identified by using light linearly polarized along different directions in backscattering configuration. Additionally, forbidden longitudinal optical modes have also been observed. Furthermore, by applying an extended 11-parameter rigid-ion model, the complete dispersion relations of InP in the wurtzite phase have been calculated, showing a good agreement with the Raman experimental data.

  3. Comparative modeling of InP solar cell structures

    Jain, R. K.; Weinberg, I.; Flood, D. J.

    1991-01-01

    The comparative modeling of p(+)n and n(+)p indium phosphide solar cell structures is studied using a numerical program PC-1D. The optimal design study has predicted that the p(+)n structure offers improved cell efficiencies as compared to n(+)p structure, due to higher open-circuit voltage. The various cell material and process parameters to achieve the maximum cell efficiencies are reported. The effect of some of the cell parameters on InP cell I-V characteristics was studied. The available radiation resistance data on n(+)p and p(+)p InP solar cells are also critically discussed.

  4. Carrier concentration effects on radiation damage in InP

    Yamaguchi, M.; Ando, K.; Uemura, C.

    1984-01-01

    Minority carrier diffusion length and carrier concentration studies have been made on room-temperature 1-MeV electron irradiated liquid-encapsulated Czochralski grown Zn-doped p-InP. The damage rate for the diffusion length and carrier removal rate due to irradiation have been found to strongly decrease with an increase in the carrier concentration in InP. These phenomena suggest that the induced defects interact with impurities in InP. A preliminary study on the annealing behavior has also been performed

  5. Workshop on Heteroepitaxial InP Solar Cells

    Weinberg, I.; Walters, R. W.

    1993-01-01

    In a generic sense, the justification for any sort of InP solar cell research applies, i.e. to take advantage of the inherently high radiation resistance and efficiency of InP solar cells. To be more specific, the approach is justified by its potential for significant cost reduction and the availability of greatly increased cell area afforded by substrates such as Si and Ge. The use of substrates, such as the latter two, would result in increased ruggedness, ease of handling, and improved manufacturability. The use of more rugged substrates would lead to a greatly increased capability for cell thinning leading to the desirable feature of reduced array weight.

  6. Der Einfluss der Digitalisierung auf die Organisation eines Unternehmens

    Walter, Wolfram M.

    Die Digitalisierung schreitet mit großen Schritten voran. Dies wirkt sich nicht nur auf die Gesellschaft im Grundsatz, sondern auch auf das Verhalten der Kunden aus. Neue Kommunikationswege beschleunigen die Interaktion zwischen Unternehmen und Verbraucher. Im Vergleich mit großen Internetfirmen werden etablierte Dienstleistungsunternehmen - vom Energieversorger bis zu Versicherungen - stark unter Druck gesetzt, sich noch intensiver mit dem Kundenservice auseinanderzusetzen. Dies wird nur möglich sein, wenn sich die Organisationen entsprechend positionieren und sich frühzeitig auf die Veränderungen einstellen. Hieraus ergeben sich mehr Chancen als Risiken, zumal es nicht nur neue Prozesse, sondern auch neue Berufsbilder geben wird.

  7. Proton irradiation induced defects in Cd and Zn doped InP

    Rybicki, G.C.; Williams, W.S.

    1993-01-01

    Proton irradiation induced defects in Zn and Cd doped InP have been studied by deep level transient spectroscopy, (DLTS). After 2 MeV proton irradiation the defects H4 and H5 were observed in lightly Zn doped InP, while the defects H3 and H5 were observed in more heavily Zn and Cd doped InP. The defect properties were not affected by the substitution of Cd for Zn, but the introduction rate of H5 was lower in Cd doped InP. The annealing rate of defects was also higher in Cd doped InP. The use of Cd doped InP may thus result in an InP solar cell with even greater radiation resistance

  8. InP nanowire array solar cell with cleaned sidewalls

    Cui, Y.; Plissard, S.; Wang, J.; Vu, T.T.T.; Smalbrugge, E.; Geluk, E.J.; de Vries, T.; Bolk, J.; Trainor, M.J.; Verheijen, M.A.; Haverkort, J.E.M.; Bakkers, E.P.A.M.

    2013-01-01

    We have fabricated InP nanowire array solar cells with an axial p-n junction. Catalyst gold nanoparticles were first patterned into an array by nanoimprint lithography. The nanowire array was grown in 19 minutes by vapor-liquid-solid growth. The sidewalls were in-situ etched by HCl and ex-situ

  9. Single-electron tunneling in InP nanowires

    Franceschi, De S.; Dam, Van J.A.; Bakkers, E.P.A.M.; Feiner, L.F.; Gurevich, L.; Kouwenhoven, L.P.

    2003-01-01

    A study was performed on single-electron tunneling in InP nanowires. The contact resistances as low as ~10 k¿, with minor temperature dependence were obtained. The Coulomb-blockade behavior was shown with single-electron charging energies of ~1 meV.

  10. Particle detectors based on InP Schottky diodes

    Yatskiv, Roman; Grym, Jan

    2012-01-01

    Roč. 10, č. 7 (2012), C100051-C100055 ISSN 1748-0221 R&D Projects: GA MŠk(CZ) OC10021; GA MŠk LD12014 Institutional support: RVO:67985882 Keywords : Particle detector * High purity InP layer * Schottky diode Subject RIV: JA - Electronics ; Optoelectronics, Electrical Engineering Impact factor: 1.869, year: 2011

  11. Spectroscopic determination of valence band parameters in InP

    Lewis, R.A.; Lough, B.C.C.

    2003-01-01

    Full text: The general form of the Hamiltonian for an electron or hole in a semiconductor has been given by Luttinger. The valence band is characterised by three parameters - γ 1 , γ 2 , γ 3 -now commonly known as the Luttinger parameters. Despite many investigations there is still considerable uncertainty regarding the Luttinger parameters of InP. The situation has been reviewed by Hackenberg et al. These authors themselves sought to determine the Luttinger parameters by hot-electron luminescence and discovered that many Luttinger parameter triplets were consistent with their data. We employ a spectroscopic approach to estimating valence-band parameters in InP. Calculations have been made for both the unperturbed energy levels and the energy levels in a magnetic field of acceptor impurities in semiconductors characterised by different Luttinger parameters. We compare our recent experimental data for the transitions associated with the Zn acceptor impurity in InP in magnetic fields up to 30 T to determine the most appropriate set of valence-band parameters for InP

  12. InP solar cell with window layer

    Jain, Raj K. (Inventor); Landis, Geoffrey A. (Inventor)

    1994-01-01

    The invention features a thin light transmissive layer of the ternary semiconductor indium aluminum arsenide (InAlAs) as a front surface passivation or 'window' layer for p-on-n InP solar cells. The window layers of the invention effectively reduce front surface recombination of the object semiconductors thereby increasing the efficiency of the cells.

  13. Surface Plasmons on Highly Doped InP

    Panah, Mohammad Esmail Aryaee; Ottaviano, Luisa; Semenova, Elizaveta

    2016-01-01

    Silicon doped InP is grown by metal-organic vapor phase epitaxy (MOVPE) using optimized growth parameters to achieve high free carrier concentration. Reflectance of the grown sample in mid-IR range is measured using FTIR and the result is used to retrieve the parameters of the dielectric function...

  14. Switching dynamics in InP photonic-crystal nanocavity

    Yu, Yi; Palushani, Evarist; Heuck, Mikkel

    2016-01-01

    In this paper, we presented switching dynamic investigations on an InP photonic-crystal (PhC) nanocavity structure using homodyne pump-probe measurements. The measurements were compared with simulations based on temporal nonlinear coupled mode theory and carrier rate equations for the dynamics of...

  15. 1990's annual report of INPE's Plasma Associated Laboratory

    1991-06-01

    This is the 1990's annual report of INPE's Plasma Associated Laboratory it contains information on current research developed at the laboratory including quiescent plasma, magnetized plasma, plasma centrifuge, plasma and radiation (gyrotron), ionic propulsion, and toroidal plasma. (A.C.A.S.)

  16. InP membrane on silicon integration technology

    Smit, M.K.

    2013-01-01

    Integration of light sources in silicon photonics is usually done with an active InP-based layer stack on a silicon-based photonic circuit-layer. InP Membrane On Silicon (IMOS) technology integrates all functionality in a single InP-based layer.

  17. Ein Ausblick auf Supply-Chain-Management im Jahr 2016

    Wieland, Andreas

    2016-01-01

    Wie sieht Supply-Chain-Management im Jahr 2016 aus? Was erwartet uns? Vieles deutet darauf hin, dass SCM in Zukunft sogar noch mehr auf den Kunden gerichtet sein könnte als bisher.......Wie sieht Supply-Chain-Management im Jahr 2016 aus? Was erwartet uns? Vieles deutet darauf hin, dass SCM in Zukunft sogar noch mehr auf den Kunden gerichtet sein könnte als bisher....

  18. Porous InP as piezoelectric matrix material in 1-3 magnetoelectric composite sensors

    Gerngross, M.-D.; Leisner, M.; Carstensen, J.; Foell, H.

    2011-01-01

    This work shows the results of the fabrication of semi-insulating piezoelectric porous InP structures by electrochemical etching and subsequent purely chemical post-etching in an isotropic HF, HNO 3 , EtOH and HAc containing electrolyte. The piezoelectric modulus d 14 of porous InP is measured to around |60| pm / V, which larger by a factor of 30 compared to bulk InP.

  19. Radiation defects in electron-irradiated InP crystals

    Brailovskii, E.Yu.; Karapetyan, F.K.; Megela, I.G.; Tartachnik, V.P.

    1982-01-01

    The results are presented of formation and annealing of defects in InP crystals at 1 to 50 MeV electron irradiation. The recovery of electrical properties in the range of 77 to 970 K during annealing processes is studied. Five low temperature annealing states in n-InP and the reverse annealing in p-InP are observed at 77 to 300 K. Four annealing stages at temperatures higher than 300 K are present. When the electron energy is increased more complicated thermostable defects are formed, and at 50 MeV electron energy besides of the point defect clusters are formed, which anneal at temperatures of 800 to 970 K. It is shown that the peculiarities of the Hall mobility at irradiation and annealing are caused by the scattering centres E/sub c/ - 0.2 eV. The 'limiting' position of the Fermi level in electron irradiated InP crystals is discussed. (author)

  20. Optical properties of Sulfur doped InP single crystals

    El-Nahass, M. M.; Youssef, S. B.; Ali, H. A. M.

    2014-05-01

    Optical properties of InP:S single crystals were investigated using spectrophotometric measurements in the spectral range of 200-2500 nm. The absorption coefficient and refractive index were calculated. It was found that InP:S crystals exhibit allowed and forbidden direct transitions with energy gaps of 1.578 and 1.528 eV, respectively. Analysis of the refractive index in the normal dispersion region was discussed in terms of the single oscillator model. Some optical dispersion parameters namely: the dispersion energy (Ed), single oscillator energy (Eo), high frequency dielectric constant (ɛ∞), and lattice dielectric constant (ɛL) were determined. The volume and the surface energy loss functions (VELF & SELF) were estimated. Also, the real and imaginary parts of the complex conductivity were calculated.

  1. Effects of mask imperfections on InP etching profiles

    Huo, D.T.C.; Yan, M.F.; Wynn, J.D.; Wilt, D.P.

    1990-01-01

    The authors have demonstrated that the quality of etch masks has a significant effect on the InP etching profiles. In particular, the authors have shown that mask imperfections can cause defective etching profiles, such as vertical sidewalls and extra mask undercutting in InP. The authors also discovered that the geometry of these defective profiles is determined by the orientation of the substrate relative to the direction of the mask imperfections. Along a left-angle 110 right-angle line mask defect, the downward etching process changes the left-angle 110 right-angle v-grooves to vertical sidewalls without extra undercutting. For v-grooves aligned along the left-angle 110 right-angle direction, defects on the mask give a significant extra undercutting without changing the etching profile

  2. Low temperature synthesis of InP nanocrystals

    Ung Thi Dieu Thuy [Institute of Materials Science (IMS), Vietnamese Academy of Science and Technology (VAST), 18 Hoang Quoc Viet, Cau Giay, Hanoi (Viet Nam); Tran Thi Thuong Huyen [Institute of Materials Science (IMS), Vietnamese Academy of Science and Technology (VAST), 18 Hoang Quoc Viet, Cau Giay, Hanoi (Viet Nam); National University of Thai Nguyen, 2 Luong Ngoc Quyen, Thai Nguyen (Viet Nam); Nguyen Quang Liem [Institute of Materials Science (IMS), Vietnamese Academy of Science and Technology (VAST), 18 Hoang Quoc Viet, Cau Giay, Hanoi (Viet Nam)], E-mail: liemnq@ims.vast.ac.vn; Reiss, Peter [DSM/INAC/SPrAM, UMR 5819 CEA-CNRS-Universite Joseph Fourier/LEMOH, CEA Grenoble, 17 rue des Martyrs, 38054 Grenoble Cedex 9 (France)

    2008-12-20

    We present a simple method for the chemical synthesis of InP nanocrystals, which comprises several advantages: (i) the use of simple reagents, namely InCl{sub 3}.4H{sub 2}O and yellow P as the In and P precursors, respectively, and NaBH{sub 4} as the reducing agent in a mixed solvent of ethanol and toluene; (ii) a short reaction time (1-5 h) and low temperature (<75 deg. C); (iii) a high reaction yield approaching 100%. InP NCs in the zinc-blende structure have been obtained as confirmed by powder X-ray diffraction and Raman scattering measurements. Their mean size of 4 nm has been determined by transmission electron microscopy, Raman scattering and absorption spectroscopy.

  3. Low temperature synthesis of InP nanocrystals

    Ung Thi Dieu Thuy; Tran Thi Thuong Huyen; Nguyen Quang Liem; Reiss, Peter

    2008-01-01

    We present a simple method for the chemical synthesis of InP nanocrystals, which comprises several advantages: (i) the use of simple reagents, namely InCl 3 .4H 2 O and yellow P as the In and P precursors, respectively, and NaBH 4 as the reducing agent in a mixed solvent of ethanol and toluene; (ii) a short reaction time (1-5 h) and low temperature (<75 deg. C); (iii) a high reaction yield approaching 100%. InP NCs in the zinc-blende structure have been obtained as confirmed by powder X-ray diffraction and Raman scattering measurements. Their mean size of 4 nm has been determined by transmission electron microscopy, Raman scattering and absorption spectroscopy

  4. Anodic oxidation of InP in pure water

    Robach, Y.; Joseph, J.; Bergignat, E.; Hollinger, G.

    1989-01-01

    It is shown that thin InP native oxide films can be grown by anodization of InP in pure water. An interfacial phosphorus-rich In(PO 3 ) 3 -like condensed phosphate is obtained this way. This condensed phosphate has good passivating properties and can be used in electronic device technology. The chemical composition of these native oxides was found similar to that of an anodic oxide grown in an anodization in glycol and water (AGW) electrolyte. From the similarity between the two depth profiles observed in pure water and AGW electrolyte, they can conclude that dissolution phenomena do not seem to play a major role. The oxide growth seems to be controlled by the drift of ionic species under the electric field

  5. Antireflection coating on InP for semiconductor detectors

    Hantehzadeh, M.R. [Plasma Physics Research Center, Science and Research Campus of Islamic Azad University, Tehran (Iran, Islamic Republic of)]. E-mail: hanteh@sr.iau.ac.ir; Ghoranneviss, M. [Plasma Physics Research Center, Science and Research Campus of Islamic Azad University, Tehran (Iran, Islamic Republic of); Sari, A.H. [Plasma Physics Research Center, Science and Research Campus of Islamic Azad University, Tehran (Iran, Islamic Republic of); Sahlani, F. [Plasma Physics Research Center, Science and Research Campus of Islamic Azad University, Tehran (Iran, Islamic Republic of); Shokuhi, A. [Plasma Physics Research Center, Science and Research Campus of Islamic Azad University, Tehran (Iran, Islamic Republic of); Shariati, M. [Plasma Physics Research Center, Science and Research Campus of Islamic Azad University, Tehran (Iran, Islamic Republic of)

    2006-10-25

    Aluminum nitride thin film by RF magnetron sputtering is used to produce antireflection coating on InP. The index of refection variation of aluminum nitride for different thickness at different wavelength in the range of 400 to 1500 nm is investigated using reflection spectroscopy. Subsequent Ar+ ion implantation at 30 keV with different doses on these coated layers has been performed. The morphology of aluminum nitride after ion implantation is characterized using atomic force microscopy AFM.

  6. Antireflection coating on InP for semiconductor detectors

    Hantehzadeh, M.R.; Ghoranneviss, M.; Sari, A.H.; Sahlani, F.; Shokuhi, A.; Shariati, M.

    2006-01-01

    Aluminum nitride thin film by RF magnetron sputtering is used to produce antireflection coating on InP. The index of refection variation of aluminum nitride for different thickness at different wavelength in the range of 400 to 1500 nm is investigated using reflection spectroscopy. Subsequent Ar+ ion implantation at 30 keV with different doses on these coated layers has been performed. The morphology of aluminum nitride after ion implantation is characterized using atomic force microscopy AFM

  7. Study of discharge in quiescent plasma machine of the INPE

    Ferreira, J.G.; Ferreira, J.L.; Ludwig, G.O.; Maciel, H.S.

    1988-12-01

    Measurements of principal plasma parameters produced by quiescent plasma machine of the Instituto de Pesquisas Espaciais (INPE) for current of 500 mA and several values of pressure and discharge power are presented. A qualitative interpretation for obtained results is done and a simple model for plasma density is compared with experimental values. The conditions of cathode operation are also investigated. (M.C.K.)

  8. Chemical etching and polishing of InP

    Kurth, E.; Reif, A.; Gottschalch, V.; Finster, J.; Butter, E.

    1988-01-01

    This paper describes possibilities of several chemical preparations for the selective cleaning of InP surfaces. The investigations of the surface states after the chemical treatment were carried out by means of XPS measurements. A pre-etching with (NH 4 ) 2 S 2 O 8 :H 2 SO 4 :H 2 O and a polishing with 1% bromine in methanol produce optically smooth (100)-and (111) P surfaces free of oxides. (author)

  9. Diameter Dependence of Planar Defects in InP Nanowires.

    Wang, Fengyun; Wang, Chao; Wang, Yiqian; Zhang, Minghuan; Han, Zhenlian; Yip, SenPo; Shen, Lifan; Han, Ning; Pun, Edwin Y B; Ho, Johnny C

    2016-09-12

    In this work, extensive characterization and complementary theoretical analysis have been carried out on Au-catalyzed InP nanowires in order to understand the planar defect formation as a function of nanowire diameter. From the detailed transmission electron microscopic measurements, the density of stacking faults and twin defects are found to monotonically decrease as the nanowire diameter is decreased to 10 nm, and the chemical analysis clearly indicates the drastic impact of In catalytic supersaturation in Au nanoparticles on the minimized planar defect formation in miniaturized nanowires. Specifically, during the chemical vapor deposition of InP nanowires, a significant amount of planar defects is created when the catalyst seed sizes are increased with the lower degree of In supersaturation as dictated by the Gibbs-Thomson effect, and an insufficient In diffusion (or Au-rich enhancement) would lead to a reduced and non-uniform In precipitation at the NW growing interface. The results presented here provide an insight into the fabrication of "bottom-up" InP NWs with minimized defect concentration which are suitable for various device applications.

  10. Die Energiesicherheit Europas in Bezug auf Erdgas und die Auswirkungen einer Kartellbildung im Gassektor

    Krämer, Luis-Martín

    2011-01-01

    Die Dissertation untersucht die aktuelle Sicherheit der europaeischen Erdgasversorgung. Sie beruecksichtigt zudem die moeglichen Auswirkungen einer Kartellbildung auf die europaeische Gasversorgungssicherheit. Die Arbeit besteht aus einer detaillierten empirischen Studie und darauf aufbauender Szenarioanalyse. Hierzu wird auf den Interdependenzansatz von Robert O. Keohane und Joseph Nye zurueckgegriffen. Zur Darstellung des komplexen Themenbereichs wird auf die Darstellungspraxis der Dichten ...

  11. TP53inp1 Gene Is Implicated in Early Radiation Response in Human Fibroblast Cells

    Nikolett Sándor

    2015-10-01

    Full Text Available Tumor protein 53-induced nuclear protein-1 (TP53inp1 is expressed by activation via p53 and p73. The purpose of our study was to investigate the role of TP53inp1 in response of fibroblasts to ionizing radiation. γ-Ray radiation dose-dependently induces the expression of TP53inp1 in human immortalized fibroblast (F11hT cells. Stable silencing of TP53inp1 was done via lentiviral transfection of shRNA in F11hT cells. After irradiation the clonogenic survival of TP53inp1 knockdown (F11hT-shTP cells was compared to cells transfected with non-targeting (NT shRNA. Radiation-induced senescence was measured by SA-β-Gal staining and autophagy was detected by Acridine Orange dye and microtubule-associated protein-1 light chain 3 (LC3B immunostaining. The expression of TP53inp1, GDF-15, and CDKN1A and alterations in radiation induced mitochondrial DNA deletions were evaluated by qPCR. TP53inp1 was required for radiation (IR induced maximal elevation of CDKN1A and GDF-15 expressions. Mitochondrial DNA deletions were increased and autophagy was deregulated following irradiation in the absence of TP53inp1. Finally, we showed that silencing of TP53inp1 enhances the radiation sensitivity of fibroblast cells. These data suggest functional roles for TP53inp1 in radiation-induced autophagy and survival. Taken together, we suppose that silencing of TP53inp1 leads radiation induced autophagy impairment and induces accumulation of damaged mitochondria in primary human fibroblasts.

  12. Tumor protein 53-induced nuclear protein 1 (TP53INP1 enhances p53 function and represses tumorigenesis

    Jeyran eShahbazi

    2013-05-01

    Full Text Available Tumor protein 53-induced nuclear protein 1 (TP53INP1 is a stress-induced p53 target gene whose expression is modulated by transcription factors such as p53, p73 and E2F1. TP53INP1 gene encodes two isoforms of TP53INP1 proteins, TP53INP1α and TP53INP1β, both of which appear to be key elements in p53 function. When associated with homeodomain-interacting protein kinase-2 (HIPK2, TP53INP1 phosphorylates p53 protein at Serine 46, enhances p53 protein stability and its transcriptional activity, leading to transcriptional activation of p53 target genes such as p21, PIG-3 and MDM2, cell growth arrest and apoptosis upon DNA damage stress. The anti-proliferative and pro-apoptotic activities of TP53INP1 indicate that TP53INP1 has an important role in cellular homeostasis and DNA damage response. Deficiency in TP53INP1 expression results in increased tumorigenesis; while TP53INP1 expression is repressed during early stages of cancer by factors such as miR-155. This review aims to summarize the roles of TP53INP1 in blocking tumor progression through p53-dependant and p53-independent pathways, as well as the elements which repress TP53INP1 expression, hence highlighting its potential as a therapeutic target in cancer treatment.

  13. Efficiency enhancement of InP nanowire solar cells by surface cleaning

    Cui, Y.; Wang, J.; Plissard, S.R.; Cavalli, A.; Vu, T.T.T.; Veldhoven, van P.J.; Gao, L.; Trainor, M.J.; Verheijen, M.A.; Haverkort, J.E.M.; Bakkers, E.P.A.M.

    2013-01-01

    We demonstrate an efficiency enhancement of an InP nanowire (NW) axial p–n junction solar cell by cleaning the NW surface. NW arrays were grown with in situ HCl etching on an InP substrate patterned by nanoimprint lithography, and the NWs surfaces were cleaned after growth by piranha etching. We

  14. The temperature dependence of 1/f noise in InP

    Chen, X.Y.; Hooge, F.N.; Leijs, M.R.

    1997-01-01

    Noise spectra were measured on CBE grown InP samples in the frequency range from 1 Hz to 104 kHz at temperatures from 77 to 500 K. The experimental results show that llfnoise stems from the lattice scattering. The 1/f noise in InP is well characterised by a parameter CtL~,, in this temperature

  15. InP HEMT Integrated Circuits for Submillimeter Wave Radiometers in Earth Remote Sensing

    Deal, William R.; Chattopadhyay, Goutam

    2012-01-01

    The operating frequency of InP integrated circuits has pushed well into the Submillimeter Wave frequency band, with amplification reported as high as 670 GHz. This paper provides an overview of current performance and potential application of InP HEMT to Submillimeter Wave radiometers for earth remote sensing.

  16. Silicon doped InP as an alternative plasmonic material for mid-infrared

    Panah, Mohammad Esmail Aryaee; Han, Li; Christensen, Dennis Valbjørn

    2016-01-01

    Silicon-doped InP is grown on top of semiinsulating iron-doped and sulfur-doped InP substrates by metalorganic vapor phase epitaxy (MOVPE), and the growth parameters are adjusted to obtain various free carrier concentrations from 1.05×1019 cm-3 up to 3.28×1019 cm-3. Midinfrared (IR) reflection...

  17. Photoacoustic investigation of doped InP using open cell configuration

    George, S.D.; Vallabhan, C.P.G.; Heck, M.J.R.; Radhakrishnan, P.; Nampoori, V.P.N.

    2002-01-01

    An open cell photoacoustic (PA) configuration was employed to evaluate the thermal diffusivity of intrinsic InP as well as InP doped with tin and iron. Thermal diffusivity data were evaluated from variation of phase of PA signal as a function of modulation frequency. In doped samples, we observe a

  18. Der Effekt von Hohlraumströmung auf den Druckausgleich

    Bentum, van C.A.; Suma, A.B.; Kalkman, I.M.; Koster, T.; Geurts, C.P.W.; Ruscheweyh, xx

    2011-01-01

    KURZFASSUNG. Hinterlüftete Fassaden sind ein häufig verwendetes System der Verkleidung. Auf der Vorderseite eines Hohlraums wird eine durchlässige äußere Schichtangebracht. Über den Raum selbst wird ein Druckausgleich zwischen der Außenseite und der Innenseite des Hohlraums erzielt. Dieser Effekt

  19. Ultrathin film, high specific power InP solar cells on flexible plastic substrates

    Shiu, K.-T.; Zimmerman, Jeramy; Wang Hongyu; Forrest, Stephen R.

    2009-01-01

    We demonstrate ultrathin-film, single-crystal InP Schottky-type solar cells mounted on flexible plastic substrates. The lightly p-doped InP cell is grown epitaxially on an InP substrate via gas source molecular beam epitaxy. The InP substrate is removed via selective chemical wet-etching after the epitaxial layers are cold-welded to a 25 μm thick Kapton sheet, followed by the deposition of an indium tin oxide top contact that forms the Schottky barrier with InP. The power conversion efficiency under 1 sun is 10.2±1.0%, and its specific power is 2.0±0.2 kW/kg. The ultrathin-film solar cells can tolerate both tensile and compressive stress by bending over a <1 cm radius without damage.

  20. High conversion efficiency and high radiation resistance InP solar cells

    Yamamoto, Akio; Itoh, Yoshio; Yamaguchi, Masafumi

    1987-01-01

    The fabrication of homojunction InP solar cells has been studied using impurity thermal diffusion, organometallic vapor phase epitaxy (OMVPE) and liquid phase epitaxy (LPE), and is discussed in this paper. Conversion efficiencies exceeding 20 % (AM1.5) are attained. These are the most efficient results ever reported for InP cells, and are comparable to those for GaAs cells. Electron and γ-ray irradiation studies have also been conducted for fabricated InP cells. The InP cells were found to have higher radiation resistance than GaAs cells. Through these studies, it has been demonstrated that the InP cells have excellent potential for space application. (author)

  1. Young's Modulus of Wurtzite and Zinc Blende InP Nanowires.

    Dunaevskiy, Mikhail; Geydt, Pavel; Lähderanta, Erkki; Alekseev, Prokhor; Haggrén, Tuomas; Kakko, Joona-Pekko; Jiang, Hua; Lipsanen, Harri

    2017-06-14

    The Young's modulus of thin conical InP nanowires with either wurtzite or mixed "zinc blende/wurtzite" structures was measured. It has been shown that the value of Young's modulus obtained for wurtzite InP nanowires (E [0001] = 130 ± 30 GPa) was similar to the theoretically predicted value for the wurtzite InP material (E [0001] = 120 ± 10 GPa). The Young's modulus of mixed "zinc blende/wurtzite" InP nanowires (E [111] = 65 ± 10 GPa) appeared to be 40% less than the theoretically predicted value for the zinc blende InP material (E [111] = 110 GPa). An advanced method for measuring the Young's modulus of thin and flexible nanostructures is proposed. It consists of measuring the flexibility (the inverse of stiffness) profiles 1/k(x) by the scanning probe microscopy with precise control of loading force in nanonewton range followed by simulations.

  2. Ultralow surface recombination velocity in InP nanowires probed by terahertz spectroscopy.

    Joyce, Hannah J; Wong-Leung, Jennifer; Yong, Chaw-Keong; Docherty, Callum J; Paiman, Suriati; Gao, Qiang; Tan, H Hoe; Jagadish, Chennupati; Lloyd-Hughes, James; Herz, Laura M; Johnston, Michael B

    2012-10-10

    Using transient terahertz photoconductivity measurements, we have made noncontact, room temperature measurements of the ultrafast charge carrier dynamics in InP nanowires. InP nanowires exhibited a very long photoconductivity lifetime of over 1 ns, and carrier lifetimes were remarkably insensitive to surface states despite the large nanowire surface area-to-volume ratio. An exceptionally low surface recombination velocity (170 cm/s) was recorded at room temperature. These results suggest that InP nanowires are prime candidates for optoelectronic devices, particularly photovoltaic devices, without the need for surface passivation. We found that the carrier mobility is not limited by nanowire diameter but is strongly limited by the presence of planar crystallographic defects such as stacking faults in these predominantly wurtzite nanowires. These findings show the great potential of very narrow InP nanowires for electronic devices but indicate that improvements in the crystallographic uniformity of InP nanowires will be critical for future nanowire device engineering.

  3. An ellipsometric measurement of optical properties for InP surfaces

    Liu, X.; Irene, E.A.; Hattangady, S.; Fountain, G.

    1990-01-01

    Several chemical cleaning procedures for InP surfaces have been studied using ellipsometry. The strong influence of cleaning on the optical properties of InP surfaces suggests that the measurements involved the formation of surface films. In order to determine the complex index of refraction for InP, a novel method which employs ellipsometry measurements of a thin nonabsorbing film on a substrate rather than measurements of a bare surface has been explored. From the knowledge of the refractive index for a series of thicknesses of films on a substrate, the complex refractive index value for the substrate can be determined. Plasma enhanced chemical vapor deposition (PECVD) SiO 2 and Si 3 N 4 films on InP have been used for this experiment, and the complex refractive index for InP has been determined to be 3.521 + i0.300 at the wavelength of 632.8 nm

  4. Scenarios of diversified power supply in OPEC states, illustrated by the example of Iran. Strategies for conversion to climate-friendly energy sources; Szenarien eines diversifizierten Energieangebots in OPEC-Staaten am Beispiel Irans. Strategien eines auf klimaschonenden Energietraegern basierenden Umstiegs

    Supersberger, Nikolaus

    2007-07-02

    Iran is one of the world's biggest petroleum exporting countries and a dominant actor in the Gulf region but in spite of this, the Iran government is faced with the same problems that developing states - and the Gulf states in particular - normally have. Problems on a national scale result mostly from the fact that most of the domestic petroleum production is also produced domestically, so there is less petroleum for exports. Iran's partnership in the international climate regime is particularly interesting as renewable energy is readily available on Iran terrain. This will motivate the country to establish a sustainable energy supply regime. (orig.)

  5. Assessment of clinical image quality in feline chest radiography with a needle-image plate (NIP) storage phosphor system. An approach to the evaluation of image quality in neonatal radiography; Untersuchungen zur Qualitaet von Thoraxaufnahmen bei Katzen mit einem auf einer Nadelstruktur basierenden Speicherfoliensystem. Modelluntersuchungen zur Bewertung der Bildqualitaet bei Neugeborenen

    Ludewig, E.; Bosch, B.; Gaebler, K.; Succow, D.; Werrmann, A. [Klinik fuer Kleintiere, Univ. Leipzig (Germany); Hirsch, W.; Sorge, I. [Abt. Paediatrische Radiologie, Univ. Leipzig (Germany); Gosch, D. [Klinik und Poliklinik fuer Diagnostische und Interventionelle Radiologie, Univ. Leipzig (Germany)

    2010-02-15

    Purpose: Is the image quality of thoracic radiographs of cats obtained with a needle-based storage phosphor (NIP) system superior to conventional (PIP) storage phosphor radiography? Is it possible to decrease the mAs by 50% with the NIP system without significant loss of information? Materials and Methods: From each of the 20 animals, three lateral radiographs were acquired. The assessment of the exposure level was based on the generated IgM-values. Images were acquired 1. with the NIP system and exposure settings equivalent to an IgM of 1.9, 2. with the PIP system and identical settings, and 3. with the NIP system and 50% of the mAs. Six blinded readers used a 5-step scale to assess the reproducibility of five anatomical structures and image noise sensation. Data were analysed using Visual Grading Characteristics Analysis (VGC). Results: While applying identical exposure values the NIP system for all features revealed superior ratings to those of the PIP system (AUC{sub VGC} values ranged from 0.81 for ''cardiac silhouette'' to 0.92 for ''trachea''). Even when reducing mAs by 50% in the NIP images all features were rated better compared with the PIP images and original settings (AUC{sub VGC} values ranged from 0.60 for ''cardiac silhouette'' to 0.74 for ''trachea'' and ''caudal thoracic field''). Conclusion: The NIP system demonstrates clearly better image quality compared to the reference PIP system. A dose reduction of 50% seems to be possible without relevant detraction from image quality. The results obtained in the animal model are valid for simulating conditions in neonatal radiological practise. (orig.)

  6. Hopping conductivity via deep impurity states in InP

    Kuznetsov, V.P.; Messerer, M.A.; Omel'yanovskij, Eh.M.

    1984-01-01

    Hopping (epsilon 3 ) and Mott conductivities via deep impurity compounds with localization radius below 10 A have been studied using as an example Mn in InP. It is shown, that the existing theory of hopping conductivity in low-alloyed semiconductors with Na 3 << 1 can be Used for the case of deep centres as successfully as for the case of insignificant hydrogen-like impurities. Fundamental parameters of the theory: localization radius of wave function of deep impurities, state density near the Fermi level, mean hop length, are determined

  7. Radiation defects in electron-irradiated InP crystals

    Brailovskii, E.Yu.; Karapetyan, F.K.; Megela, I.G.; Tartachnik, V.P. (AN Ukrainskoj SSR, Kiev. Inst. Yadernykh Issledovanij)

    1982-06-16

    The results are presented of formation and annealing of defects in InP crystals at 1 to 50 MeV electron irradiation. The recovery of electrical properties in the range of 77 to 970 K during annealing processes is studied. Five low temperature annealing states in n-InP and the reverse annealing in p-InP are observed at 77 to 300 K. Four annealing stages at temperatures higher than 300 K are present. When the electron energy is increased more complicated thermostable defects are formed, and at 50 MeV electron energy besides of the point defect clusters are formed, which anneal at temperatures of 800 to 970 K. It is shown that the peculiarities of the Hall mobility at irradiation and annealing are caused by the scattering centres E/sub c/ - 0.2 eV. The 'limiting' position of the Fermi level in electron irradiated InP crystals is discussed.

  8. InP Devices For Millimeter-Wave Monolithic Circuits

    Binari, S. C.; Neidert, R. E.; Dietrich, H. B.

    1989-11-01

    High efficiency, mm-wave operation has been obtained from lateral transferred-electron devices (TEDs) designed with a high resistivity region located near the cathode contact. At 29.9 GHz, a CW power output of 29.1 mW with a conversion efficiency of 6.7% has been achieved with cavity-tuned discrete devices. This result represents the highest power output and efficiency of a lateral TED in this frequency range. The lateral devices also had a CW power output of 0.4 mW at 98.5 GHz and 0.9 mW at 75.2 GHz. In addition, a monolithic oscillator incorporating the lateral TED has been demonstrated at 79.9 GHz. InP Schottky-barrier diodes have been fabricated using selective MeV ion implantation into semi-insulating InP substrates. Using Si implantation with energies of up to 6.0 MeV, n+ layers as deep as 3 μm with peak carrier concentrations of 2 x 1018 cm-3 have been obtained. These devices have been evaluated as mixers and detectors at 94 GHz and have demonstrated a conversion loss of 7.6 dB and a zero-bias detector sensitivity as high as 400 mV/mW.

  9. Segregation of antimony in InP in MOVPE

    Weeke, Stefan

    2008-07-01

    In this work the segregation of antimony in indium phosphide in metal organic vapour phase epitaxy (MOVPE)was systematically investigated. Therefore phosphine stabilized InP surfaces were treated with tri-methyl-antimony (TMSb) in MOVPE. An antimony rich Sb/InP surface was established, showing a typical spectra for the antimonides observed in reflectance anisotropy spectroscopy (RAS).Adsorption and desorption of antimony are investigated, as well as the incorporation of Sb during overgrowth of the Sb/InP surface with InP. Therefore the growth parameters temperature, TMSb partial pressure and treatment time are varied and their influence investigated. The experiments are monitored in-situ with RAS, the achieved data is correlated with ex-situ characterisation such as X-ray diffraction (XRD) and secondary ion mass spectroscopy (SIMS). It is shown that under treatment with TMSb a stable Sb/InP surface is formed within seconds, which does not change under further TMSb treatment. This process is rarely influenced by the TMSb partial pressure. On the contrary, the desorption of Sb is a very slow process. Two main processes can be distinguished: The desorption of excess Sb from the surface and the formation of the MOVPE prepared InP (2 x 1) surface. The reaction velocity of adsorption and desorption increases with temperature. Above a critical value the increase of TMSb partial pressure has no influence on the time for desorption. During overgrowth of the Sb/InP surface the opposite temperature dependence is observed: with increasing growth temperature the typical spectra for antimonides is observed longer. An analysis of the grown samples with XRD and SIMS showed the formation of an InPSb double quantum well. One layer is formed at the interface, the second one 50 nm-120 nm deep in the InP. The location of the 2nd InPSb layer can be correlated with the vanishing of the Sb signature in RAS. The distance between the quantum wells increases with growth temperature, until it

  10. Segregation of antimony in InP in MOVPE

    Weeke, Stefan

    2008-01-01

    In this work the segregation of antimony in indium phosphide in metal organic vapour phase epitaxy (MOVPE)was systematically investigated. Therefore phosphine stabilized InP surfaces were treated with tri-methyl-antimony (TMSb) in MOVPE. An antimony rich Sb/InP surface was established, showing a typical spectra for the antimonides observed in reflectance anisotropy spectroscopy (RAS).Adsorption and desorption of antimony are investigated, as well as the incorporation of Sb during overgrowth of the Sb/InP surface with InP. Therefore the growth parameters temperature, TMSb partial pressure and treatment time are varied and their influence investigated. The experiments are monitored in-situ with RAS, the achieved data is correlated with ex-situ characterisation such as X-ray diffraction (XRD) and secondary ion mass spectroscopy (SIMS). It is shown that under treatment with TMSb a stable Sb/InP surface is formed within seconds, which does not change under further TMSb treatment. This process is rarely influenced by the TMSb partial pressure. On the contrary, the desorption of Sb is a very slow process. Two main processes can be distinguished: The desorption of excess Sb from the surface and the formation of the MOVPE prepared InP (2 x 1) surface. The reaction velocity of adsorption and desorption increases with temperature. Above a critical value the increase of TMSb partial pressure has no influence on the time for desorption. During overgrowth of the Sb/InP surface the opposite temperature dependence is observed: with increasing growth temperature the typical spectra for antimonides is observed longer. An analysis of the grown samples with XRD and SIMS showed the formation of an InPSb double quantum well. One layer is formed at the interface, the second one 50 nm-120 nm deep in the InP. The location of the 2nd InPSb layer can be correlated with the vanishing of the Sb signature in RAS. The distance between the quantum wells increases with growth temperature, until it

  11. Electrochemical formation of InP porous nanostructures and its application to amperometric chemical sensors

    Sato, Taketomo; Mizohata, Akinori; Fujino, Toshiyuki; Hashizume, Tamotsu

    2008-01-01

    In this paper, we report the electrochemical formation of the InP porous nanostructures and their feasibility for the application to the amperometric chemical sensors. Our two step electrochemical process consists of the pore formation on a (001) n-type InP substrate and the subsequent etching of pore walls caused by changing the polarity of the InP electrode in a HCl-based electrolyte. By applying the anodic bias to the InP electrode, the high-density array of uniform nanopores was formed on the surface. Next, the cathodic bias was applied to the porous sample to reduce the wall thickness by cathodic decomposition of InP, where the thickness of InP nanowall decreased uniformly along the entire depth of the porous layer. From the amperometric measurements of the porous electrode, it was found that the electrocatalytic activity was much higher than that of the planar electrode. Furthermore, the current sensitivity for the H 2 O 2 detection was much enhanced after the cathodic decomposition process. The InP porous nanostructure formed by the present process is one of the promising structures for the application to the semiconductor-based bio/chemical sensors. (copyright 2008 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  12. Characteristics of withstanding radiation damage of InP crystals and devices

    Yamaguchi, Masafumi; Ando, Koshi

    1988-01-01

    Recently, the authors discovered that the characteristics of with standing radiation damage of InP crystals and devices (solar cells) are superior to those of Si and GaAs crystals and devices. Also the restoration phenomena at room temperature of radiation deterioration and the accelerated anneal phenomena by light irradiation and the injection of other minority, carriers in InP system devices were found. Such excellent characteristics suggested that InP devices are promising for the use in space. In this paper, taking an example of solar cells, the radiation resistance characteristics and their mechanism of InP crystals and devices are reported, based on the results of analysis by deep level transient spectroscopy and others. In InP solar cells, the high efficiency of photoelectric conversion was maintained even in the high dose irradiation of 1 MeV electron beam. As the carrier concentration in InP crystals is higher, they are stronger against radiation. With the increase of carrier concentration, the rate of anneal of radiation deterioration at room temperature increased. The accelerated anneal effect by minority carrier injection was remarkable in n + -p junction cells. The excellent characteristics of InP crystals are due to the formation of Frenkel defects of P and their instability. (K.I.)

  13. Damage formation and annealing in InP due to swift heavy ions

    Kamarou, A.; Wesch, W.; Wendler, E.; Klaumuenzer, S.

    2004-01-01

    Virgin and pre-damaged InP samples were irradiated at room temperature (RT) and at liquid nitrogen temperature (LNT) with different fluences of 140 MeV Kr, 390 MeV Xe and 600 MeV Au ions. The pre-damaging was performed with 600 keV Ge ions at LNT to obtain different damage levels. The samples were analysed by means of Rutherford backscattering spectrometry (RBS) in random and channelling geometry. A relatively weak damage accumulation in virgin InP and a very significant defect annealing in pre-damaged InP occurs due to 140 MeV Kr irradiation. The damaging of virgin InP with 390 MeV Xe and 600 MeV Au is much more efficient in comparison with that of 140 MeV Kr. Further, annealing of the pre-damaged InP due to 390 MeV Xe irradiation is hardly visible. At LNT InP appears to be much more radiation-resistant to swift heavy ion (SHI) irradiation than at RT. Our results show that during SHI irradiation of InP both damage formation and damage annealing occur simultaneously. Whether the first or the second one plays a more important role depends on the SHI mass and energy

  14. [Managment system in safety and health at work organization. An Italian example in public sector: Inps].

    Di Loreto, G; Felicioli, G

    2010-01-01

    The Istituto Nazionale della Previdenza Sociale (Inps) is one of the biggest Public Sector organizations in Italy; about 30.000 people work in his structures. Fifteen years ago, Inps launched a long term project with the objective to create a complex and efficient safety and health at work organization. Italian law contemplates a specific kind of physician working on safety and health at work, called "Medico competente", and 85 Inps's physicians work also as "Medico competente". This work describes how IT improved coordination and efficiency in this occupational health's management system.

  15. All-optical signal processing using InP photonic-crystal nanocavity switches

    Yu, Yi; Vukovic, Dragana; Heuck, Mikkel

    2014-01-01

    In this paper, we present recent progress in experimental characterization of InP photonic-crystal nanocavity switches. Pump-probe measurements on an InP PhC H0 cavity show large-contrast ultrafast switching at low pulse energy. At large pulse energies, a large resonance shift passing across...... for the joint effects of fast carrier diffusion, slow surface and bulk recombination. Utilizin g the simple InP PhC nanocavity structure, we successfully dem onstrate 10-Gb/s RZ- OOK all-optical modulation with low energy consumption....

  16. Systems and methods for advanced ultra-high-performance InP solar cells

    Wanlass, Mark

    2017-03-07

    Systems and Methods for Advanced Ultra-High-Performance InP Solar Cells are provided. In one embodiment, an InP photovoltaic device comprises: a p-n junction absorber layer comprising at least one InP layer; a front surface confinement layer; and a back surface confinement layer; wherein either the front surface confinement layer or the back surface confinement layer forms part of a High-Low (HL) doping architecture; and wherein either the front surface confinement layer or the back surface confinement layer forms part of a heterointerface system architecture.

  17. Zur Wirkung hoher Temperaturen auf vorratsschädliche Insekten

    Adler, Cornel

    2008-01-01

    Vorratsschädliche Insekten sind Spezialisten, die in der Lage sind, trockene pflanzliche Materialien aufzuspüren, zu besiedeln und damit über die Befeuchtung durch Respiration dem Abbau durch weitere Organismen (Pilze, Milben, Bakterien) zuzuführen. Auf diese Weise sind sie die Auslöser eines Kompostierungsprozesses. Durch ihr hervorragendes Orientierungsvermögen entlang eines Duftstoffgradienten finden sie sich regelmäßig in Vorratslagern und Gebäuden der Lebens- und Futtermittelverarbeitung...

  18. Produktherkunft und Preis als Einflussfaktoren auf die Kaufentscheidung

    Leitow, Detmar

    2005-01-01

    Vor dem Hintergrund gesättigter und informationsüberlasteter Märkte wird die Bedeutung der regionalen Herkunft von Lebensmitteln für das Konsumentenverhalten diskutiert. Obwohl diesem Produktattribut in wissenschaftlichen Befragungen eine marketingrelevante Bedeutung bescheinigt wird, spiegelt sich die geäußerte Präferenz und Mehrpreisbereitschaft aus Sicht des Einzelhandels häufig nicht im Kaufverhalten wider. Dies deutet auf eine Diskrepanz zwischen der Einstellung und dem Verhalten hin. Zi...

  19. Zahlen und Rechenvorgänge auf unterschiedlichen Abstraktionsniveaus

    Rödler, Klaus

    "Das Verständnis geht langsam vor sich!" Diesen wichtigen Satz hörte ich bei einem Vortrag von Martin Lowsky. Auf die hier behandelte Fragestellung übertragen heißt das: Was eine Zahl ist und wie ich sie im Rechenvorgang einsetzen und interpretieren kann, das erschließt sich erst allmählich. Die Zahl des Rechenanfängers ist nicht dieselbe wie die des kompetenten Rechners und es ist nicht die Zahl des Lehrers oder der Lehrerin. Die Zahlen sind nur auf der Oberfläche der Worte und Zeichen gleich. Im Innern, im Verständnis, sind sie völlig verschieden! Ich glaube, dass die Missachtung dieser Divergenz dazu führt, dass manche Kinder in für den Lehrer und Lehrerin nicht nachvollziehbaren Routinen stecken bleiben, einfachste Informationen nicht wirklich integrieren. Die auf beiden Seiten wachsende Verunsicherung durch die nicht erkannte und daher nicht kommunizierbare Diskrepanz im inneren Zahlkonzept stört den allmählichen Aufbau strukturierter Zahlvorstellungen.

  20. Study by AES, EELS Spectroscopy of electron Irradiation on InP and InPO4/InP in comparison with Monte Carlo simulation

    Lounis, Z; Bouslama, M; Hamaida, K; Abdellaoui, A; Ouerdane, A; Ghaffour, M; Berrouachedi, N; Jardin, C

    2012-01-01

    We give the great interest to characterise the InP and InPO 4 /InP submitted to electron beam irradiation owing to the Auger Electron Spectroscopy (AES) associated to both methods Electron Energy Loss Spectroscopy (EELS). The incident electron produces breaking of (In-P) chemical bonds. The electron beam even acts to stimulate oxidation of InP surface involving on the top layers. Other, the oxide InPO 4 developed on InP does appear very sensitive to the irradiation due to electron beam shown by the monitoring of EELS spectra recorded versus the irradiated times of the surface. There appears a new oxide thought to be In 2 O 3 . We give the simulation methods Casino (Carlo simulation of electron trajectory in solids) for determination with accuracy the loss energy of backscattered electrons and compared with reports results have been obtained with EELS Spectroscopy. These techniques of spectroscopy alone do not be able to verify the affected depth during interaction process. So, using this simulation method, we determine the interaction of electrons in the matter.

  1. INP studies for a Tau-Charm Factory

    Skrinsky, A.

    1994-01-01

    This paper presents the results of studies undertaken at INP of options for a Tau Charm Factory. Three different beam options have been studied. First is a 'round beam option', allowing axially symmetric beams which yield high tau-pair productivity. The second option involves monochromatic beams, which enhances productivity for narrow c bar c states, gives good tau pair productions in a clean manner, and has a good resonant-to-nonresonant ratio. The third option allows longitudinal polarization, should it prove to be interesting. It is an easy option to implement because it only involves polarized electrons. Work on some of these options is described in terms of experiments on the VEPP-2 device

  2. InAs nanowire formation on InP(001)

    Parry, H. J.; Ashwin, M. J.; Jones, T. S.

    2006-01-01

    The heteroepitaxial growth of InAs on InP(001) by solid source molecular beam epitaxy has been studied for a range of different growth temperatures and annealing procedures. Atomic force microscopy images show that nanowires are formed for deposition in the temperature range of 400-480 deg. C, and also following high temperature annealing (480 deg. C) after deposition at 400 deg. C. The wires show preferential orientation along and often exhibit pronounced serpentine behavior due to the presence of kinks, an effect that is reduced at increasing growth temperature. The results suggest that the serpentine behavior is related to the degree of initial surface order. Kinks in the wires appear to act as nucleation centers for In adatoms migrating along the wires during annealing, leading to the coexistence of large three-dimensional islands

  3. Sulfur as a surface passivation for InP

    Iyer, R.; Chang, R. R.; Lile, D. L.

    1988-01-01

    The use of liquid and gas phase sulfur pretreatment of the surface of InP as a way to form a near-ideal passivated surface prior to chemical vapor deposition of SiO2 was investigated. Results of high-frequency and quasi-static capacitance-voltage measurements, as well as enhancement mode insulated gate field-effect transistor (FET) transductance and drain current stability studies, all support the efficacy of this approach for metal-insulator-semiconductor application of this semiconductor. In particular, surface state values in the range of 10 to the 10th to a few 10 to the 11th/sq cm per eV and enhancement mode FET drain current drifts of less than 5 percent over a 12 h test period were measured.

  4. Experimental studies on the surface confined quiescent plasma at INPE

    Ferreira, J.L.; Ferreira, J.G.; Sandonato, G.M.; Alves, M.V.; Ludwig, G.O.; Montes, A.

    1988-06-01

    Quiescent plasma machines are being used in several experiments at the Associated Plasma Laboratory in INPE. The research activities comprises particle simulation studies on ion acoustic double Layers, and studies on the plasma production and loss in surface confined magnetic multidipole thermionic discharges. Recent results from these studies have shown a non-maxwellian plasma formed in most of the discharge conditions. The plasma leakage through the multidipole fields shows an anomalous diffusion process driven by ion acoustic turbulence in the magnetic sheath. The information derived from these studies are being used in the construction and characterization of ion sources for shallow ion implantation in semiconductors, in ion thruster for space propulsion and in the development of powerful ion sources for future use in neutral beam injection systems. (author) [pt

  5. Experimental studies on the surface confined quiescent plasma at INPE

    Ferreira, J.L.; Ferreira, J.G.; Sandonato, G.M.; Alves, M.V.; Ludwig, G.O.; Montes, A.

    1988-01-01

    The quiescent plasma machines used in several experiments at the Associated Plasma Laboratory in INPE are presented. The research activities comprise particle simulation studies on ion acoustic double layers, and studies on the plasma production and loss in surface confined magnetic multidipole thermionic discharges. Recent results from these studies have shown a non-maxwellian plasma formed in most of the discharge conditions. The plasma leakage through the multidipole fields shows an anomalous diffusion process driven by ion acoustic turbulence in the magnetic sheath. The information derived from these studies are being used in the construction and characterization of ion sources for shallow ion implantation in semiconductors, in ion thruster for space propulsion and in the development of powerful ion sources for future use in neutral beam injection systems. (author) [pt

  6. Bulk and interface defects in electron irradiated InP

    Peng Chen; Sun Heng-hui

    1989-01-01

    Systematic studies on the structure of defects in InP caused by electron irradiation are conducted based on experimental measurements and theoretical calculations. The rates of introduction and annealing-out temperatures of In and P vancancies are estimated using proper theoretical models. These calculations reveal that after room temperature irradiation only complexes may exist. It is also supported by our experimental data that the sum of introducing rates of three detected levels are less than the theoretical value calculated for single vacancies. According to our equation on the relation between interface states and DLTS signal and from the results of computer calculation we believe that the broad peak appearing in the DLTS diagram before irradiation is related to interface states. Its disappearance after electron irradiation suggests the reduction of interface states; this is further confirmed by the reduction of surface recombination rate derived from the results of surface photovoltage measurement

  7. Fabrication and characterization of InP fresnel microlenses

    Diadiuk, V.; Walpole, J.N.; Liau, Z.L.

    1987-01-01

    Since diode lasers typically have a beam divergence of a few tens of degrees, collimating the laser outputs leads to greatly far-field patterns, which, in turn translates into more power in the main lobe of the combined output. Achieving this collimation in the case of a diode laser array, with its small device-to-device distance, requires an array of similarly spaced microlenses with very short focal length, small diameter and small F number. In this paper, the authors describe the fabrication and performance of a Fresnel microlens array etched directly in InP wafers; these microlenses have been used successfully to collimate the output of GainAsP/InP buried-heterostructure (BH) diode lasers

  8. Low energy Ar ion bombardment damage of Si, GaAs, and InP surfaces

    Williams, R.S.

    1982-01-01

    Argon bombardment damage to (100) surfaces of Si, GaAs, and InP for sputter ion-gun potentials of 1, 2, and 3 kilovolts was studied using Rutherford backscattering. Initial damage rates and saturation damage levels were determined. Bombardment damage sensitivity increased for the sequence Si, GaAs, and InP. Saturation damage levels for Si and GaAs correspond reasonably to LSS projected range plus standard deviation estimates; damage to InP exceeded this level significantly. For an ion-gun potential of 3 keV, the initial sputter yield of P from an InP surface exceeded the sputter yield of In by four atoms per incident Ar projectile. (author)

  9. Channeling study of laser-induced defect generation in InP and InAs

    Burdel', K.K.; Kashkarov, P.K.; Timoshenko, V.Yu.; Chechenin, N.G.

    1992-01-01

    Damage production in InP and InAs single crystals induced by a ruby-laser pulse irradiation with τ p =20 ms in the energy density region W=0.05-1.0 J/cm 2 is studied by the channeling and Rutherford backscattering techniques. The defect generation threshold was determined to be equal to 0.2 J/cm 2 and 0.55 J/cm 2 for InP and InAs crystals, respectively. Stoichiometric defects in InP crystals were observed at W>=0.5 J/cm 2 . The temperature fields in InP and InAs under laser irradiation were calculated. The experimental observations are considered as a result of a selective evaporation of the components from the melt

  10. Control of persistent photoconductivity in nanostructured InP through morphology design

    Monaico, Ed; Postolache, V; Borodin, E; Lupan, O; Tiginyanu, I M; Ursaki, V V; Adelung, R; Nielsch, K

    2015-01-01

    In this paper, we show that long-duration-photoconductivity decay (LDPCD) and persistent photoconductivity (PPC) in porous InP structures fabricated by anodic etching of bulk substrates can be controlled through the modification of the sample morphology. Particularly, the PPC inherent at low temperatures to porous InP layers with the thickness of skeleton walls comparable with pore diameters is quenched in structures consisting of ultrathin walls produced at high anodization voltages. The relaxation of photoconductivity in bulk InP substrates, porous layers, and utrathin membranes is investigated as a function of temperature and excitation power density. The obtained results suggest that PPC in porous InP layers is due to porosity induced potential barriers which hinder the recombination of photoexcited carriers, while the photoconductivity relaxation processes in ultrathin membranes are governed by surface states. (paper)

  11. Electronic and magnetic properties of digitally Ti doped InP: A first principles study

    Rahman, Gul; Cho, Sunglae; Hong, Soon Cheol

    2008-01-01

    Using the full-potential linearized augmented plane wave method within the generalized gradient approximation, we study the electronic and the magnetic properties of digitally Ti doped InP. It is quite interesting that digitally Ti-doped InP system shows half metallic ferromagnetism even though both bulk zinc blende TiP and InP are paramagnetic. We also investigate the electronic and the magnetic properties as a function of spacer layer thickness. Their properties such as exchange coupling constant and atomic projected density of states are more or less independent of the InP thickness. Spin density contour maps indicate that the spin-polarization is confined within the TiP plane. The system may show a highly anisotropic property in spin-polarized transport. (copyright 2008 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  12. High Efficiency InP Solar Cells from Low Toxicity Tertiarybutylphosphine

    Hoffman, Richard W., Jr.; Fatemi, Navid S.; Wilt, David M.; Jenkins, Phillip P.; Brinker, David J.; Scheiman, David A.

    1994-01-01

    Large scale manufacture of phosphide based semiconductor devices by organo-metallic vapor phase epitaxy (OMVPE) typically requires the use of highly toxic phosphine. Advancements in phosphine substitutes have identified tertiarybutylphosphine (TBP) as an excellent precursor for OMVPE of InP. High quality undoped and doped InP films were grown using TBP and trimethylindium. Impurity doped InP films were achieved utilizing diethylzinc and silane for p and n type respectively. 16 percent efficient solar cells under air mass zero, one sun intensity were demonstrated with Voc of 871 mV and fill factor of 82.6 percent. It was shown that TBP could replace phosphine, without adversely affecting device quality, in OMVPE deposition of InP thus significantly reducing toxic gas exposure risk.

  13. Roadmap for integration of InP based photonics and silicon electronics

    Williams, K.A.

    2015-01-01

    We identify the synergies and a roadmap for the intimate integration of InP photonic integrated circuits and Silicon electronic ICs using wafer-scale processes. Advantages are foreseen in terms of bandwidth, energy savings and package simplification.

  14. Structural analysis of erbium {delta}-doped InP by OMVPE with RBS-channeling

    Yuhara, Junji; Takeda, Hitoshi; Matsubara, Naoki; Tabuchi, Masao; Fujiwara, Yasufumi; Morita, Kenji; Takeda, Yoshikazu [Nagoya Univ. (Japan). School of Engineering

    1997-03-01

    We have determined the lattice location of Er in InP {delta}-doped by OMVPE with RBS-channeling. Er concentrations along the <001> and <011> directions are same as random yields, while a significant flux peaking effect is seen for the <111> direction. These data suggest that Er atoms occupy the site equivalent to the hexahedral site in InP lattice. (author)

  15. Wurtzite-Phased InP Micropillars Grown on Silicon with Low Surface Recombination Velocity.

    Li, Kun; Ng, Kar Wei; Tran, Thai-Truong D; Sun, Hao; Lu, Fanglu; Chang-Hasnain, Connie J

    2015-11-11

    The direct growth of III-V nanostructures on silicon has shown great promise in the integration of optoelectronics with silicon-based technologies. Our previous work showed that scaling up nanostructures to microsize while maintaining high quality heterogeneous integration opens a pathway toward a complete photonic integrated circuit and high-efficiency cost-effective solar cells. In this paper, we present a thorough material study of novel metastable InP micropillars monolithically grown on silicon, focusing on two enabling aspects of this technology-the stress relaxation mechanism at the heterogeneous interface and the microstructure surface quality. Aberration-corrected transmission electron microscopy studies show that InP grows directly on silicon without any amorphous layer in between. A set of periodic dislocations was found at the heterointerface, relaxing the 8% lattice mismatch between InP and Si. Single crystalline InP therefore can grow on top of the fully relaxed template, yielding high-quality micropillars with diameters expanding beyond 1 μm. An interesting power-dependence trend of carrier recombination lifetimes was captured for these InP micropillars at room temperature, for the first time for micro/nanostructures. By simply combining internal quantum efficiency with carrier lifetime, we revealed the recombination dynamics of nonradiative and radiative portions separately. A very low surface recombination velocity of 1.1 × 10(3) cm/sec was obtained. In addition, we experimentally estimated the radiative recombination B coefficient of 2.0 × 10(-10) cm(3)/sec for pure wurtzite-phased InP. These values are comparable with those obtained from InP bulk. Exceeding the limits of conventional nanowires, our InP micropillars combine the strengths of both nanostructures and bulk materials and will provide an avenue in heterogeneous integration of III-V semiconductor materials onto silicon platforms.

  16. Ultra-Fast Low Energy Switching Using an InP Photonic Crystal H0 Nanocavity

    Yu, Yi; Palushani, Evarist; Heuck, Mikkel

    2013-01-01

    Pump-probe measurements on InP photonic crystal H0 nanocavities show large-contrast ultrafast switching at low pulse energy. For large pulse energies, high-frequency carrier density oscillations are induced, leading to pulsesplitting.......Pump-probe measurements on InP photonic crystal H0 nanocavities show large-contrast ultrafast switching at low pulse energy. For large pulse energies, high-frequency carrier density oscillations are induced, leading to pulsesplitting....

  17. InAs quantum wires on InP substrate for VCSEL applications

    Lamy , Jean-Michel; Paranthoën , Cyril; Levallois , Christophe; Nakkar , Abdulhadi; Folliot , Hervé; Dehaese , Olivier; Le Corre , Alain; Loualiche , Slimane; Castany , Olivier; Dupont , Laurent

    2008-01-01

    International audience; Quantum dash based vertical cavity surface emitting lasers (VCSEL) on InP substrate are presented. Single and close stacking layers were successfully grown with molecular beam epitaxy. Optimized quantum dash layers exhibit a strong polarized 1.55 µm photoluminescence along the [1-10] crystallographic axis. Continuous wave laser emission is demonstrated at room temperature for the first time on a quantum dash VCSEL structure on InP susbtrate. The quantum dash VCSEL lase...

  18. Tunable absorption resonances in the ultraviolet for InP nanowire arrays.

    Aghaeipour, Mahtab; Anttu, Nicklas; Nylund, Gustav; Samuelson, Lars; Lehmann, Sebastian; Pistol, Mats-Erik

    2014-11-17

    The ability to tune the photon absorptance spectrum is an attracting way of tailoring the response of devices like photodetectors and solar cells. Here, we measure the reflectance spectra of InP substrates patterned with arrays of vertically standing InP nanowires. Using the reflectance spectra, we calculate and analyze the corresponding absorptance spectra of the nanowires. We show that we can tune absorption resonances for the nanowire arrays into the ultraviolet by decreasing the diameter of the nanowires. When we compare our measurements with electromagnetic modeling, we generally find good agreement. Interestingly, the remaining differences between modeled and measured spectra are attributed to a crystal-phase dependence in the refractive index of InP. Specifically, we find indication of significant differences in the refractive index between the modeled zinc-blende InP nanowires and the measured wurtzite InP nanowires in the ultraviolet. We believe that such crystal-phase dependent differences in the refractive index affect the possibility to excite optical resonances in the large wavelength range of 345 InP nanowire-based solar cells and photodetectors.

  19. Wurtzite InP nanowire arrays grown by selective area MOCVD

    Chu, Hyung-Joon; Stewart, Lawrence; Yeh, Ting-Wei; Dapkus, P.D.

    2010-01-01

    InP nanowires are a unique material phase because this normally zincblende material forms in the wurtzite crystal structure below a critical diameter owing to the contribution of sidewalls to the total formation energy. This may allow control of the carrier transport and optical properties of InP nanowires for applications such as nano scale transistors, lasers and detectors. In this work, we describe the fabrication of InP nanowire arrays by selective area growth using MOCVD in the diameter range where the wurtzite structure is formed. The spatial growth rate in selective area growth is modeled by a diffusion model for the precursors. The proposed model achieves an average error of 9%. Electron microscopy shows that the grown InP nanowires are in the wurtzite crystal phase with many stacking faults. The threshold diameter of the crystal phase transition of InP nanowires is larger than the thermodynamic estimation. In order to explain this tendency, we propose a surface kinetics model based on a 2 x 2 reconstruction. This model can explain the increased tendency for wurtzite nanowire formation on InP (111)A substrates and the preferred growth direction of binary III-V compound semiconductor nanowires. (copyright 2010 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  20. Wafer-scale self-organized InP nanopillars with controlled orientation for photovoltaic devices.

    Sanatinia, Reza; Berrier, Audrey; Dhaka, Veer; Perros, Alexander P; Huhtio, Teppo; Lipsanen, Harri; Anand, Srinivasan

    2015-10-16

    A unique wafer-scale self-organization process for generation of InP nanopillars is demonstrated, which is based on maskless ion-beam etching (IBE) of InP developed to obtain the nanopillars, where the height, shape, and orientation of the nanopillars can be varied by controlling the processing parameters. The fabricated InP nanopillars exhibit broadband suppression of the reflectance, 'black InP,' a property useful for solar cells. The realization of a conformal p-n junction for carrier collection, in the fabricated solar cells, is achieved by a metalorganic vapor phase epitaxy (MOVPE) overgrowth step on the fabricated pillars. The conformal overgrowth retains the broadband anti-reflection property of the InP nanopillars, indicating the feasibility of this technology for solar cells. Surface passivation of the formed InP nanopillars using sulfur-oleylamine solution resulted in improved solar-cell characteristics. An open-circuit voltage of 0.71 V and an increase of 0.13 V compared to the unpassivated device were achieved.

  1. Different growth regimes in InP nanowire growth mediated by Ag nanoparticles.

    Oliveira, D S; Zavarize, M; Tizei, L H G; Walls, M; Ospina, C A; Iikawa, F; Ugarte, D; Cotta, M A

    2017-12-15

    We report on the existence of two different regimes in one-step Ag-seeded InP nanowire growth. The vapor-liquid-solid-mechanism is present at larger In precursor flows and temperatures, ∼500 °C, yielding high aspect ratio and pure wurtzite InP nanowires with a semi-spherical metal particle at the thin apex. Periodic diameter oscillations can be achieved under extreme In supersaturations at this temperature range, showing the presence of a liquid catalyst. However, under lower temperatures and In precursor flows, large diameter InP nanowires with mixed wurtzite/zincblende segments are obtained, similarly to In-assisted growth. Chemical composition analysis suggest that In-rich droplet formation is catalyzed at the substrate surface via Ag nanoparticles; this process might be facilitated by the sulfur contamination detected in these nanoparticles. Furthermore, part of the original Ag nanoparticle remains solid and is embedded inside the actual catalyst, providing an in situ method to switch growth mechanisms upon changing In precursor flow. Nevertheless, our Ag-seeded InP nanowires exhibit overall optical emission spectra consistent with the observed structural properties and similar to Au-catalyzed InP nanowires. We thus show that Ag nanoparticles may be a suitable replacement for Au in InP nanowire growth.

  2. Unit cell parameters of wurtzite InP nanowires determined by x-ray diffraction.

    Kriegner, D; Wintersberger, E; Kawaguchi, K; Wallentin, J; Borgström, M T; Stangl, J

    2011-10-21

    High resolution x-ray diffraction is used to study the structural properties of the wurtzite polytype of InP nanowires. Wurtzite InP nanowires are grown by metal-organic vapor phase epitaxy using S-doping. From the evaluation of the Bragg peak position we determine the lattice parameters of the wurtzite InP nanowires. The unit cell dimensions are found to differ from the ones expected from geometric conversion of the cubic bulk InP lattice constant. The atomic distances along the c direction are increased whereas the atomic spacing in the a direction is reduced in comparison to the corresponding distances in the zinc-blende phase. Using core/shell nanowires with a thin core and thick nominally intrinsic shells we are able to determine the lattice parameters of wurtzite InP with a negligible influence of the S-doping due to the much larger volume in the shell. The determined material properties will enable the ab initio calculation of electronic and optical properties of wurtzite InP nanowires.

  3. Growth of semi-insulating InP through nuclear doping

    Aliyev, M.I; Rashidova, Sh.Sh; Huseynli, M.A.

    2012-01-01

    Full text : Semi-insulating semiconductors are widely used in so-called dielectronics. Dielectric devices have quick response, good frequency characteristics, a low noise level, low sensitivity to temperature changes, etc. One of the most promising semiconductor materials is InP. At present annealing and doping are commonly used techniques to grow semi-insulating InP. The aim of this work was to grow semi-insulating InP through nuclear doping (by irradiation with gamma-quanta). InP single crystals were obtained by Czochralski method. Specimens were irradiated with doses of 10kGr at room temperature. Electrical conductivity and Hall effect were measured before and after irradiation in the temperature range 77 to 320K. After irradiation reduction in electrical conductivity was observed. This fact can be associated with formation of M-centers in positively threefold charged states of vacancy and antisite defects. Under irradiation first Ini interstitial atoms and phosphorus vacancies form. Further, the Ini atoms occupy the phosphorus vacancies. As a result there appear InP antiste defects, which along with indium vacancies form V I nI n p + In p + + complexes of the acceptor type. These complexes turn out to be traps for charge carriers and electrical conductivity of irradiated InP are sharply reduced to semi-insulating specimens

  4. 1.0 MeV irradiation of OHMIC, MS, MIS contacts to InP

    Warren, C.E.; Wagner, B.F.; Anderson, W.A.

    1986-01-01

    The radiation effects of 1.0 MeV electrons with a dose of 10/sup 15/cm/sup -2/ to MS and MIS Schottky diodes on InP have been compared to the radiation effects of MIS diodes on GaAs and Si. The radiation effects to ohmic contacts were also investigated. The metal for the diodes on the InP was gold. Au/Ti/Al was used for the GaAs diodes and Cr for the silicon diodes. Oxide layers on InP were grown by anodization in 0.1 N KOH. Oxides to GaAs and Si were grown thermally. Ohmic contacts to InP were formed using AuGe/Ni and AuSn alloys, followed by annealing in N/sub 2//H/sub 2/ (85%/15%). Metal Semiconductor diodes on InP were found to be at least sensitive to the irradiation. The InP MS and MIS diodes showed only small changes in the current voltage (I-V) characteristic, whereas the GaAs and Si devices showed a decrease in reverse current after irradiation. The ohmic contact resistance was increased by a factor of 2 to 5 after irradiation

  5. Surface photovoltage study of InP and Zn3P2

    Thurgate, S.M.; Lacuesta, T.D.; Huck, N.R.

    1989-01-01

    The surface photovoltage spectra of InP and Zn 3 P 2 were measured using a Kelvin probe to determine the contact potential difference between the sample and the probe as a function of the wavelength of illuminating light. The features in the resulting spectra were found to be sensitive to ion bombardment. The photovoltage spectra obtained from the InP differed from previously reported SPC spectra in that it showed clear evidence of surface states (or interfacial states) at 0.86 eV and 0.68 eV above VBM. It was found that the features in the spectrum of Zn 3 P 2 were reduced by ion bombardment, but not removed completely, whereas the features in the InP spectra were completely removed. Exposure of the ion bombarded urface to air restored the features of Zn 3 P 2 but only produced a small change in the spectrum of the InP. The loss of features in the InP spectra can be attributed to damage in the substrate caused by the ion bombardment even though the oxide layer was not removed before the damage occurred. Zn 3 P 2 was not as sensitive to ion damage as InP. (orig.)

  6. InP quantum dots embedded in GaP: Optical properties and carrier dynamics

    Hatami, F.; Masselink, W.T.; Schrottke, L.; Tomm, J.W.; Talalaev, V.; Kristukat, C.; Goni, A.R.

    2003-01-01

    The optical emission and dynamics of carriers in Stranski-Krastanow self-organized InP quantum dots embedded in a GaP matrix are studied. InP deposited on GaP (001) using gas-source molecular-beam epitaxy forms quantum dots for InP coverage greater than 1.8 monolayers. Strong photoluminescence from the quantum dots is observed up to room temperature at about 2 eV; photoluminescence from the two-dimensional InP wetting layer is measured at about 2.2 eV. Modeling based on the 'model-solid theory' indicates that the band alignment for the InP quantum dots is direct and type I. Furthermore, low-temperature time-resolved photoluminescence measurements indicate that the carrier lifetime in the quantum dots is about 2 ns, typical for type-I quantum dots. Pressure-dependent photoluminescence measurements provide further evidence for a type-I band alignment for InP/GaP quantum dots at normal pressure with the GaP X states lying about 30 meV higher than the Γ states in the InP quantum dots, but indicate that they become type II under hydrostatic pressures of about 1.2 GPa

  7. Enhanced light output from the nano-patterned InP semiconductor substrate through the nanoporous alumina mask.

    Jung, Mi; Kim, Jae Hun; Lee, Seok; Jang, Byung Jin; Lee, Woo Young; Oh, Yoo-Mi; Park, Sun-Woo; Woo, Deokha

    2012-07-01

    A significant enhancement in the light output from nano-patterned InP substrate covered with a nanoporous alumina mask was observed. A uniform nanohole array on an InP semiconductor substrate was fabricated by inductively coupled plasma reactive ion etching (ICP-RIE), using the nanoporous alumina mask as a shadow mask. The light output property of the semiconductor substrate was investigated via photoluminescence (PL) intensity measurement. The InP substrate with a nanohole array showed a more enhanced PL intensity compared with the raw InP substrate without a nanohole structure. After ICP-RIE etching, the light output from the nanoporous InP substrate covered with a nanoporous alumina mask showed fourfold enhanced PL intensity compared with the raw InP substrate. These results can be used as a prospective method for increasing the light output efficiency of optoelectronic devices.

  8. Nährwertkennzeichnung und ihr Einfluss auf das Verbraucherverhalten

    Grunert, Klaus G.; Storcksdieck, Stefan

    2009-01-01

    Nährwertkennzeichnung soll zu einem gesünderen Ernährungsverhalten der Verbraucher beitragen. Um dieses Ziel erreichen zu können, ist es notwendig, dass solche Informationen von den Verbrauchern wahrgenommen, verstanden und in ihren Kaufentscheidungen auch tatsächlich angewendet werden, und dass......, die an prominenter Stelle auf der Vorderseite der Verpackung angebracht werden. Neuere Forschung zeigt, dass die meisten Verbraucher in der Lage sind, solche Informationen korrekt zu verarbeiten, dass aber nur eine Minderheit der Verbraucher dies im Geschäft auch tut. Die entscheidende Frage der...

  9. P/N InP solar cells on Ge wafers

    Wojtczuk, Steven; Vernon, Stanley; Burke, Edward A.

    1994-01-01

    Indium phosphide (InP) P-on-N one-sun solar cells were epitaxially grown using a metalorganic chemical vapor deposition process on germanium (Ge) wafers. The motivation for this work is to replace expensive InP wafers, which are fragile and must be thick and therefore heavy, with less expensive Ge wafers, which are stronger, allowing use of thinner, lighter weight wafers. An intermediate InxGs1-xP grading layer starting as In(0.49)Ga(0.51) at the GaAs-coated Ge wafer surface and ending as InP at the top of the grading layer (backside of the InP cell) was used to attempt to bend some of the threading dislocations generated by lattice-mismatch between the Ge wafer and InP cell so they would be harmlessly confined in this grading layer. The best InP/Ge cell was independently measured by NASA-Lewis with a one-sun 25 C AMO efficiently measured by NASA-Lewis with a one-circuit photocurrent 22.6 mA/sq cm. We believe this is the first published report of an InP cell grown on a Ge wafer. Why get excited over a 9 percent InP/Ge cell? If we look at the cell weight and efficiency, a 9 percent InP cell on an 8 mil Ge wafer has about the same cell power density, 118 W/kg (BOL), as the best InP cell ever made, a 19 percent InP cell on an 18 mil InP wafer, because of the lighter Ge wafer weight. As cell panel materials become lighter, the cell weight becomes more important, and the advantage of lightweight cells to the panel power density becomes more important. In addition, although InP/Ge cells have a low beginning-of-life (BOL) efficiency due to dislocation defects, the InP/Ge cells are very radiation hard (end-of-life power similar to beginning-of-life). We have irradiated an InP/Ge cell with alpha particles to an equivalent fluence of 1.6 x 10(exp 16) 1 MeV electrons/sq cm and the efficiency is still 83 percent of its BOL value. At this fluence level, the power output of these InP/Ge cells matches the GaAs/Ge cell data tabulated in the JPL handbook. Data are presented

  10. High-efficiency, deep-junction, epitaxial InP solar cells on (100) and (111)B InP substrates

    Venkatasubramanian, R.; Timmons, M. L.; Hutchby, J. A.; Walters, Robert J.; Summers, Geoffrey P.

    1994-01-01

    We report on the development and performance of deep-junction (approximately 0.25 micron), graded-emitter-doped, n(sup +)-p InP solar cells grown by metallorganic chemical vapor deposition (MOCVD). A novel, diffusion-transport process for obtaining lightly-doped p-type base regions of the solar cell is described. The I-V data and external quantum-efficiency response of these cells are presented. The best active-area AMO efficiency for these deep-junction cells on (100)-oriented InP substrates is 16.8 percent, with a J(sub SC) of 31.8 mA/sq cm, a V(sub OC) of 0.843 V, and a fill-factor of 0.85. By comparison, the best cell efficiency on the (111)B-oriented InP substrates was 15.0 percent. These efficiency values for deep-junction cells are encouraging and compare favorably with performance of thin-emitter (0.03 micron) epitaxial cells as well as that of deep-emitter diffused cells. The cell performance and breakdown voltage characteristics of a batch of 20 cells on each of the orientations are presented, indicating the superior breakdown voltage properties and other characteristics of InP cells on the (111)B orientation. Spectral response, dark I-V data, and photoluminescence (PL) measurements on the InP cells are presented with an analysis on the variation in J(sub SC) and V(sub OC) of the cells. It is observed, under open-circuit conditions, that lower-V(sub OC) cells exhibit higher band-edge PL intensity for both the (100) and (111)B orientations. This anomalous behavior suggests that radiative recombination in the heavily-doped n(sup +)-InP emitter may be detrimental to achieving higher V(sub OC) in n(sup +)-p InP solar cells.

  11. Surface processes during purification of InP quantum dots

    Natalia Mordvinova

    2014-08-01

    Full Text Available Recently, a new simple and fast method for the synthesis of InP quantum dots by using phosphine as phosphorous precursor and myristic acid as surface stabilizer was reported. Purification after synthesis is necessary to obtain samples with good optical properties. Two methods of purification were compared and the surface processes which occur during purification were studied. Traditional precipitation with acetone is accompanied by a small increase in photoluminescence. It occurs that during the purification the hydrolysis of the indium precursor takes place, which leads to a better surface passivation. The electrophoretic purification technique does not increase luminescence efficiency but yields very pure quantum dots in only a few minutes. Additionally, the formation of In(OH3 during the low temperature synthesis was explained. Purification of quantum dots is a very significant part of postsynthetical treatment that determines the properties of the material. But this subject is not sufficiently discussed in the literature. The paper is devoted to the processes that occur at the surface of quantum dots during purification. A new method of purification, electrophoresis, is investigated and described in particular.

  12. Photoluminescence study of as-grown vertically standing wurtzite InP nanowire ensembles.

    Iqbal, Azhar; Beech, Jason P; Anttu, Nicklas; Pistol, Mats-Erik; Samuelson, Lars; Borgström, Magnus T; Yartsev, Arkady

    2013-03-22

    We demonstrate a method that enables the study of photoluminescence of as-grown nanowires on a native substrate by non-destructively suppressing the contribution of substrate photoluminescence. This is achieved by using polarized photo-excitation and photoluminescence and by making an appropriate choice of incident angle of both excitation beam and photoluminescence collection direction. Using TE-polarized excitation at a wavelength of 488 nm at an incident angle of ∼70° we suppress the InP substrate photoluminescence relative to that of the InP nanowires by about 80 times. Consequently, the photoluminescence originating from the nanowires becomes comparable to and easily distinguishable from the substrate photoluminescence. The measured photoluminescence, which peaks at photon energies of ∼1.35 eV and ∼1.49 eV, corresponds to the InP substrate with zinc-blende crystal structure and to the InP nanowires with wurtzite crystal structure, respectively. The photoluminescence quantum yield of the nanowires was found to be ∼20 times lower than that of the InP substrate. The nanowires, grown vertically in a random ensemble, neither exhibit substantial emission polarization selectivity to the axis of the nanowires nor follow excitation polarization preferences observed previously for a single nanowire.

  13. Carrier thermalization dynamics in single zincblende and wurtzite InP Nanowires.

    Wang, Yuda; Jackson, Howard E; Smith, Leigh M; Burgess, Tim; Paiman, Suriati; Gao, Qiang; Tan, Hark Hoe; Jagadish, Chennupati

    2014-12-10

    Using transient Rayleigh scattering (TRS) measurements, we obtain photoexcited carrier thermalization dynamics for both zincblende (ZB) and wurtzite (WZ) InP single nanowires (NW) with picosecond resolution. A phenomenological fitting model based on direct band-to-band transition theory is developed to extract the electron-hole-plasma density and temperature as a function of time from TRS measurements of single nanowires, which have complex valence band structures. We find that the thermalization dynamics of hot carriers depends strongly on material (GaAs NW vs InP NW) and less strongly on crystal structure (ZB vs WZ). The thermalization dynamics of ZB and WZ InP NWs are similar. But a comparison of the thermalization dynamics in ZB and WZ InP NWs with ZB GaAs NWs reveals more than an order of magnitude slower relaxation for the InP NWs. We interpret these results as reflecting their distinctive phonon band structures that lead to different hot phonon effects. Knowledge of hot carrier thermalization dynamics is an essential component for effective incorporation of nanowire materials into electronic devices.

  14. Single n+-i-n+ InP nanowires for highly sensitive terahertz detection.

    Peng, Kun; Parkinson, Patrick; Gao, Qian; Boland, Jessica L; Li, Ziyuan; Wang, Fan; Mokkapati, Sudha; Fu, Lan; Johnston, Michael B; Tan, Hark Hoe; Jagadish, Chennupati

    2017-03-24

    Developing single-nanowire terahertz (THz) electronics and employing them as sub-wavelength components for highly-integrated THz time-domain spectroscopy (THz-TDS) applications is a promising approach to achieve future low-cost, highly integrable and high-resolution THz tools, which are desirable in many areas spanning from security, industry, environmental monitoring and medical diagnostics to fundamental science. In this work, we present the design and growth of n + -i-n + InP nanowires. The axial doping profile of the n + -i-n + InP nanowires has been calibrated and characterized using combined optical and electrical approaches to achieve nanowire devices with low contact resistances, on which the highly-sensitive InP single-nanowire photoconductive THz detectors have been demonstrated. While the n + -i-n + InP nanowire detector has a only pA-level response current, it has a 2.5 times improved signal-to-noise ratio compared with the undoped InP nanowire detector and is comparable to traditional bulk THz detectors. This performance indicates a promising path to nanowire-based THz electronics for future commercial applications.

  15. Nonepitaxial Thin-Film InP for Scalable and Efficient Photocathodes.

    Hettick, Mark; Zheng, Maxwell; Lin, Yongjing; Sutter-Fella, Carolin M; Ager, Joel W; Javey, Ali

    2015-06-18

    To date, some of the highest performance photocathodes of a photoelectrochemical (PEC) cell have been shown with single-crystalline p-type InP wafers, exhibiting half-cell solar-to-hydrogen conversion efficiencies of over 14%. However, the high cost of single-crystalline InP wafers may present a challenge for future large-scale industrial deployment. Analogous to solar cells, a thin-film approach could address the cost challenges by utilizing the benefits of the InP material while decreasing the use of expensive materials and processes. Here, we demonstrate this approach, using the newly developed thin-film vapor-liquid-solid (TF-VLS) nonepitaxial growth method combined with an atomic-layer deposition protection process to create thin-film InP photocathodes with large grain size and high performance, in the first reported solar device configuration generated by materials grown with this technique. Current-voltage measurements show a photocurrent (29.4 mA/cm(2)) and onset potential (630 mV) approaching single-crystalline wafers and an overall power conversion efficiency of 11.6%, making TF-VLS InP a promising photocathode for scalable and efficient solar hydrogen generation.

  16. Tailoring the optical characteristics of microsized InP nanoneedles directly grown on silicon.

    Li, Kun; Sun, Hao; Ren, Fan; Ng, Kar Wei; Tran, Thai-Truong D; Chen, Roger; Chang-Hasnain, Connie J

    2014-01-08

    Nanoscale self-assembly offers a pathway to realize heterogeneous integration of III-V materials on silicon. However, for III-V nanowires directly grown on silicon, dislocation-free single-crystal quality could only be attained below certain critical dimensions. We recently reported a new approach that overcomes this size constraint, demonstrating the growth of single-crystal InGaAs/GaAs and InP nanoneedles with the base diameters exceeding 1 μm. Here, we report distinct optical characteristics of InP nanoneedles which are varied from mostly zincblende, zincblende/wurtzite-mixed, to pure wurtzite crystalline phase. We achieved, for the first time, pure single-crystal wurtzite-phase InP nanoneedles grown on silicon with bandgaps of 80 meV larger than that of zincblende-phase InP. Being able to attain excellent material quality while scaling up in size promises outstanding device performance of these nanoneedles. At room temperature, a high internal quantum efficiency of 25% and optically pumped lasing are demonstrated for single nanoneedle as-grown on silicon substrate. Recombination dynamics proves the excellent surface quality of the InP nanoneedles, which paves the way toward achieving multijunction photovoltaic cells, long-wavelength heterostructure lasers, and advanced photonic integrated circuits.

  17. ESCA and electron diffraction studies of InP surface heated under As molecular beam exposure

    Sugiura, Hideo; Yamaguchi, Masafumi; Shibukawa, Atsushi

    1983-01-01

    Chemical composition of InP substrate surface heattreated under As molecular beam exposure in an ultrahigh vacuum chamber was studied with ESCA, and surface reconstruction of the substrate was examined by in-situ electron diffraction. The InP substrate heated under the exposure of As molecular beam has mirror surface up to 590 0 C while the surface of InP heated above 400 0 C in vacuum is roughened. The ESCA study shows that thin InAs layer (thickness 0 C under the exposure of As. The electron diffraction study indicates that the InP is cleaned at about 500 0 C in As pressures of 10 -7 - 10 -5 Torr. The InP surface is prevented from thermally decomposing by the coverage of the InAs layer, which may be formed through the following process: 2InPO 4 + As 4 → 2InAs + P 2 O 5 + As 2 O 3 . (author)

  18. Wafer-scale self-organized InP nanopillars with controlled orientation for photovoltaic devices

    Sanatinia, Reza; Berrier, Audrey; Anand, Srinivasan; Dhaka, Veer; Perros, Alexander P; Huhtio, Teppo; Lipsanen, Harri

    2015-01-01

    A unique wafer-scale self-organization process for generation of InP nanopillars is demonstrated, which is based on maskless ion-beam etching (IBE) of InP developed to obtain the nanopillars, where the height, shape, and orientation of the nanopillars can be varied by controlling the processing parameters. The fabricated InP nanopillars exhibit broadband suppression of the reflectance, ‘black InP,’ a property useful for solar cells. The realization of a conformal p–n junction for carrier collection, in the fabricated solar cells, is achieved by a metalorganic vapor phase epitaxy (MOVPE) overgrowth step on the fabricated pillars. The conformal overgrowth retains the broadband anti-reflection property of the InP nanopillars, indicating the feasibility of this technology for solar cells. Surface passivation of the formed InP nanopillars using sulfur-oleylamine solution resulted in improved solar-cell characteristics. An open-circuit voltage of 0.71 V and an increase of 0.13 V compared to the unpassivated device were achieved. (paper)

  19. Assembly of phosphide nanocrystals into porous networks: formation of InP gels and aerogels.

    Hitihami-Mudiyanselage, Asha; Senevirathne, Keerthi; Brock, Stephanie L

    2013-02-26

    The applicability of sol-gel nanoparticle assembly routes, previously employed for metal chalcogenides, to phosphides is reported for the case of InP. Two different sizes (3.5 and 6.0 nm) of InP nanoparticles were synthesized by solution-phase arrested precipitation, capped with thiolate ligands, and oxidized with H₂O₂ or O₂/light to induce gel formation. The gels were aged, solvent-exchanged, and then supercritically dried to obtain aerogels with both meso- (2-50 nm) and macropores (>50 nm) and accessible surface areas of ∼200 m²/g. Aerogels showed higher band gap values relative to precursor nanoparticles, suggesting that during the process of assembling nanoparticles into 3D architectures, particle size reduction may have taken place. In contrast to metal chalcogenide gelation, InP gels did not form using tetranitromethane, a non-oxygen-transferring oxidant. The requirement of an oxygen-transferring oxidant, combined with X-ray photoelectron spectroscopy data showing oxidized phosphorus, suggests gelation is occurring due to condensation of phosphorus oxoanionic moieties generated at the interfaces. The ability to link discrete InP nanoparticles into a 3D porous network while maintaining quantum confinement is expected to facilitate exploitation of nanostructured InP in solid-state devices.

  20. The electrochemistry of InP in Br2/HBr solutions and its relevance to etching behaviour

    Notten, P.H.L.; Damen, A.A.J.M.

    1987-01-01

    Etch rate-potential curves of p-InP in HBr and Br2/HBr solutions in the dark and under illumination were correlated with current-potential curves. It was found that InP is etched via a "chemical" mechanism both by HBr and Br2. In aqueous HBr solutions InP is only etched at a significant rate at

  1. A high-coverage nanoparticle monolayer for the fabrication of a subwavelength structure on InP substrates.

    Kim, Dae-Seon; Park, Min-Su; Jang, Jae-Hyung

    2011-08-01

    Subwavelength structures (SWSs) were fabricated on the Indium Phosphide (InP) substrate by utilizing the confined convective self-assembly (CCSA) method followed by reactive ion etching (RIE). The surface condition of the InP substrate was changed by depositing a 30-nm-thick SiO2 layer and subsequently treating the surface with O2 plasma to achieve better surface coverage. The surface coverage of nanoparticle monolayer reached 90% by using O2 plasma-treated SiO2/InP substrate among three kinds of starting substrates such as the bare InP, SiO2/InP and O2 plasma-treated SiO2/InP substrate. A nanoparticle monolayer consisting of polystyrene spheres with diameter of 300 nm was used as an etch mask for transferring a two-dimensional periodic pattern onto the InP substrate. The fabricated conical SWS with an aspect ratio of 1.25 on the O2 plasma-treated SiO2/InP substrate exhibited the lowest reflectance. The average reflectance of the conical SWS was 5.84% in a spectral range between 200 and 900 nm under the normal incident angle.

  2. Enhanced monolayer MoS2/InP heterostructure solar cells by graphene quantum dots

    Wang, Peng; Lin, Shisheng; Ding, Guqiao; Li, Xiaoqiang; Wu, Zhiqian; Zhang, Shengjiao; Xu, Zhijuan; Xu, Sen; Lu, Yanghua; Xu, Wenli; Zheng, Zheyang

    2016-04-01

    We demonstrate significantly improved photovoltaic response of monolayer molybdenum disulfide (MoS2)/indium phosphide (InP) van der Waals heterostructure induced by graphene quantum dots (GQDs). Raman and photoluminescence measurements indicate that effective charge transfer takes place between GQDs and MoS2, which results in n-type doping of MoS2. The doping effect increases the barrier height at the MoS2/InP heterojunction, thus the averaged power conversion efficiency of MoS2/InP solar cells is improved from 2.1% to 4.1%. The light induced doping by GQD provides a feasible way for developing more efficient MoS2 based heterostructure solar cells.

  3. Twin and grain boundary in InP: A synchrotron radiation study

    Han, Y.; Liu, X.; Jiao, J.; Lin, L.; Jiang, J.; Wang, Z.; Tian, Y.

    1998-01-01

    Experimentally observed X-ray reflectivity curves show bi-crystal(twin) characteristics. The study revealed that there was defect segregation at the twin boundary. Stress was relaxed at the edge of the boundary. Relaxation of the stress resulted in formation of twin and other defects. As a result of formation of such defects, a defect-free and stress-free zone or low defect density and small stress zone is created around the defects. So a twin model was proposed to explain the experimental results. Stress(mainly thermal stress), chemical stoichiometry deviation and impurities nonhomogeneous distributions are the key factors that cause twins in LEC InP crystal growth. Twins on (111) face in LEC InP crystal were studied. Experimental evidence of above mentioned twin model and suggestions on how to get twin-free LEC InP single crystals will be discussed

  4. Electrical properties of InP irradiated by fast neutrons of a nuclear reactor

    Kolin, N.G.; Merkurisov, D.I.; Solov'ev, S.P.

    2000-01-01

    Electrophysical properties of InP single crystalline samples with different initial concentration of charge carriers have been studied in relation to irradiation conditions with fast neutrons of a nuclear reactor and subsequent heat treatments within the temperature range of 20-900 deg C. It has been shown that changes of the properties depend on the initial doping level. The annealing in the temperature range mentioned above results in the elimination of radiation defects. This makes possible to use the nuclear doping method for InP samples. In this respect the contribution of intermediate neutron reactions to the whole effect of the InP nuclear doping is estimated to be ∼ 10% [ru

  5. Magnetic circular dichroism study of electron-irradiation induced defects in InP

    Gislason, H.P.

    1989-01-01

    A strong magnetic circular dichroism (MCD) absorption band centered at 1.07 eV in electron irradiated InP is reported. Temperature and magnetic field dependence of the signal reveal that the centre giving rise to this band is a spin triplet. By simulating neutral and reverse bias conditions of junction measurements through a careful choice of irradiation dose and starting material, the MCD band is shown to have an annealing behaviour closely resembling that of the majority carrier traps which control the Fermi level position in n- and p-type InP. The 1.07 eV MCD band represents the first magneto-optical signal connected with this family of complex irradiation-induced defects in InP. (author) 19 refs., 5 figs., 1 tab

  6. Amorphization and recrystallization in MeV ion implanted InP crystals

    Xiong, F.; Nieh, C.W.; Jamieson, D.N.; Vreeland, T. Jr.; Tombrello, T.A.

    1988-01-01

    A comprehensive study of MeV- 15 N-ion-implanted InP by a variety of analytical techniques has revealed the physical processes involved in MeV ion implantation into III-V compound semiconductors as well as the influence of post-implantation annealing. It provides a coherent picture of implant distribution, structural transition, crystalline damage, and lattice strain in InP crystals induced by ion implantation and thermal annealing. The experimental results from the different measurements are summarized in this report. Mechanisms of amorphization by implantation and recrystallization through annealing in MeV-ion-implanted InP are proposed and discussed in light of the results obtained

  7. High microwave performance ion-implanted GaAs MESFETs on InP substrates

    Wada, M.; Kato, K.

    1990-01-01

    Ion implantation was employed, for the first time, in fabricating GaAs MESFETs in undoped 2 μm thick GaAs epitaxial layers directly grown on InP substrates by low-pressure MOVPE. The Si-ion-implanted GaAs layer on InP substrates showed excellent electrical characteristics: a mobility of 4300 cm 2 /Vs with a carrier density of 2 x 10 17 cm -3 at room temperature. The MESFET (0.8 μm gate length) exhibited a current-gain cutoff frequency of 25 GHz and a maximum frequency of oscillation of 53 GHz, the highest values yet reported to GaAs MESFETs on InP substrates. These results demonstrate the high potential of ion-implanted MESFETs as electronic devices for high-speed InP-based OEICs. (author)

  8. Post deposition annealing effect on the properties of Al2O3/InP interface

    Kim, Hogyoung; Kim, Dong Ha; Choi, Byung Joon

    2018-02-01

    Post deposition in-situ annealing effect on the interfacial and electrical properties of Au/Al2O3/n-InP junctions were investigated. With increasing the annealing time, both the barrier height and ideality factor changed slightly but the series resistance decreased significantly. Photoluminescence (PL) measurements showed that the intensities of both the near band edge (NBE) emission from InP and defect-related bands (DBs) from Al2O3 decreased with 30 min annealing. With increasing the annealing time, the diffusion of oxygen (indium) atoms into Al2O3/InP interface (into Al2O3 layer) occurred more significantly, giving rise to the increase of the interface state density. Therefore, the out-diffusion of oxygen atoms from Al2O3 during the annealing process should be controlled carefully to optimize the Al2O3/InP based devices.

  9. Composition and structure of ion-bombardment-induced growth cones on InP

    Malherbe, J.B.; Lakner, H.; Gries, W.H.

    1991-01-01

    The previously reported effect of low-energy (several keV) ion bombardment on the surface topography of InP was investigated by scanning transmission electron microscopy. Convergent beam electron diffraction patterns of the surface growth 'cones' induced by argon ion bombardment of (100) InP between 7 and 10 keV proved the cones to consist of crystalline InP (and not metallic indium, as has sometimes been claimed). The investigation showed that the irradiated surface region is not rendered completely amorphous but that it recrystallizes from the crystalline/amorphous interface in a columnar growth pattern, often terminating in growth cones protruding above the surface. Weak beam investigations revealed that the overwhelming majority of the cones have the orientation of the substrate. These phenomena were observed at all dose densities from 7 x 10 15 to 2 x 10 17 cm -2 . (author)

  10. Inverse metal-assisted chemical etching produces smooth high aspect ratio InP nanostructures.

    Kim, Seung Hyun; Mohseni, Parsian K; Song, Yi; Ishihara, Tatsumi; Li, Xiuling

    2015-01-14

    Creating high aspect ratio (AR) nanostructures by top-down fabrication without surface damage remains challenging for III-V semiconductors. Here, we demonstrate uniform, array-based InP nanostructures with lateral dimensions as small as sub-20 nm and AR > 35 using inverse metal-assisted chemical etching (I-MacEtch) in hydrogen peroxide (H2O2) and sulfuric acid (H2SO4), a purely solution-based yet anisotropic etching method. The mechanism of I-MacEtch, in contrast to regular MacEtch, is explored through surface characterization. Unique to I-MacEtch, the sidewall etching profile is remarkably smooth, independent of metal pattern edge roughness. The capability of this simple method to create various InP nanostructures, including high AR fins, can potentially enable the aggressive scaling of InP based transistors and optoelectronic devices with better performance and at lower cost than conventional etching methods.

  11. Band gap and band offset of (GaIn)(PSb) lattice matched to InP

    Köhler, F.; Böhm, G.; Meyer, R.; Amann, M.-C.

    2005-07-01

    Metastable (GaxIn1-x)(PySb1-y) layers were grown on (001) InP substrates by gas source molecular beam epitaxy. Low-temperature photoluminescence spectroscopy was applied to these heterostructures and revealed spatially indirect band-to-band recombination of electrons localized in the InP with holes in the (GaxIn1-x)(PySb1-y). In addition, samples with layer thicknesses larger than 100nm showed direct PL across the band gap of (GaxIn1-x)(PySb1-y). Band-gap energies and band offset energies of (GaxIn1-x)(PySb1-y) relative to InP were derived from these PL data. A strong bowing parameter was observed.

  12. Formation of nanogaps in InAs nanowires by selectively etching embedded InP segments.

    Schukfeh, M I; Storm, K; Hansen, A; Thelander, C; Hinze, P; Beyer, A; Weimann, T; Samuelson, L; Tornow, M

    2014-11-21

    We present a method to fabricate nanometer scale gaps within InAs nanowires by selectively etching InAs/InP heterostructure nanowires. We used vapor-liquid-solid grown InAs nanowires with embedded InP segments of 10-60 nm length and developed an etching recipe to selectively remove the InP segment. A photo-assisted wet etching process in a mixture of acetic acid and hydrobromic acid gave high selectivity, with accurate removal of InP segments down to 20 nm, leaving the InAs wire largely unattacked, as verified using scanning electron and transmission electron microscopy. The obtained nanogaps in InAs wires have potential as semiconducting electrodes to investigate electronic transport in nanoscale objects. We demonstrate this functionality by dielectrophoretically trapping 30 nm diameter gold nanoparticles into the gap.

  13. Formation of nanogaps in InAs nanowires by selectively etching embedded InP segments

    Schukfeh, M I; Hansen, A; Tornow, M; Storm, K; Thelander, C; Samuelson, L; Hinze, P; Weimann, T; Beyer, A

    2014-01-01

    We present a method to fabricate nanometer scale gaps within InAs nanowires by selectively etching InAs/InP heterostructure nanowires. We used vapor–liquid–solid grown InAs nanowires with embedded InP segments of 10–60 nm length and developed an etching recipe to selectively remove the InP segment. A photo-assisted wet etching process in a mixture of acetic acid and hydrobromic acid gave high selectivity, with accurate removal of InP segments down to 20 nm, leaving the InAs wire largely unattacked, as verified using scanning electron and transmission electron microscopy. The obtained nanogaps in InAs wires have potential as semiconducting electrodes to investigate electronic transport in nanoscale objects. We demonstrate this functionality by dielectrophoretically trapping 30 nm diameter gold nanoparticles into the gap. (paper)

  14. Pharmakobotanische Untersuchungen von Lavendelsorten auf dem Plattensee- Plateau

    Tóth, Frida

    2014-09-01

    Full Text Available Auf dem Hof Dörgicsei Levendula Major GmbH wurden 9 Lavendelsorten (6 Sorten von Lavandula angustifolia und 3 Sorten von Lavandula x intermedia untersucht. Neben den morphologischen und Wachstumseigenschaften wurden auch Frisch- und Trockengewichte bewertet. Quantitative und qualitative Untersuchungen von den Blüten- und Ätherischöldrogen wurden auch durchgeführt. Die statistische Analyse zeigte signifikant höhere Erträge bei den Sorten L. angustifolia ’Essence Purple’ und L. x intermedia ’Edelweiss’. Gehalt und Zusammensetzung von ätherischem Öl war eindeutig bei der Sorte L. angustifolia ’Ellagance Purple’ am günstigsten.

  15. Differential InP HEMT MMIC Amplifiers Embedded in Waveguides

    Kangaslahti, Pekka; Schlecht, Erich; Samoska, Lorene

    2009-01-01

    Monolithic microwave integrated-circuit (MMIC) amplifiers of a type now being developed for operation at frequencies of hundreds of gigahertz contain InP high-electron-mobility transistors (HEMTs) in a differential configuration. The differential configuration makes it possible to obtain gains greater than those of amplifiers having the single-ended configuration. To reduce losses associated with packaging, the MMIC chips are designed integrally with, and embedded in, waveguide packages, with the additional benefit that the packages are compact enough to fit into phased transmitting and/or receiving antenna arrays. Differential configurations (which are inherently balanced) have been used to extend the upper limits of operating frequencies of complementary metal oxide/semiconductor (CMOS) amplifiers to the microwave range but, until now, have not been applied in millimeter- wave amplifier circuits. Baluns have traditionally been used to transform from single-ended to balanced configurations, but baluns tend to be lossy. Instead of baluns, finlines are used to effect this transformation in the present line of development. Finlines have been used extensively to drive millimeter- wave mixers in balanced configurations. In the present extension of the finline balancing concept, finline transitions are integrated onto the affected MMICs (see figure). The differential configuration creates a virtual ground within each pair of InP HEMT gate fingers, eliminating the need for inductive vias to ground. Elimination of these vias greatly reduces parasitic components of current and the associated losses within an amplifier, thereby enabling more nearly complete utilization of the full performance of each transistor. The differential configuration offers the additional benefit of multiplying (relative to the single-ended configuration) the input and output impedances of each transistor by a factor of four, so that it is possible to use large transistors that would otherwise have

  16. InP on SOI devices for optical communication and optical network on chip

    Fedeli, J.-M.; Ben Bakir, B.; Olivier, N.; Grosse, Ph.; Grenouillet, L.; Augendre, E.; Phillippe, P.; Gilbert, K.; Bordel, D.; Harduin, J.

    2011-01-01

    For about ten years, we have been developing InP on Si devices under different projects focusing first on μlasers then on semicompact lasers. For aiming the integration on a CMOS circuit and for thermal issue, we relied on SiO2 direct bonding of InP unpatterned materials. After the chemical removal of the InP substrate, the heterostructures lie on top of silicon waveguides of an SOI wafer with a separation of about 100nm. Different lasers or photodetectors have been achieved for off-chip optical communication and for intra-chip optical communication within an optical network. For high performance computing with high speed communication between cores, we developed InP microdisk lasers that are coupled to silicon waveguide and produced 100μW of optical power and that can be directly modulated up to 5G at different wavelengths. The optical network is based on wavelength selective circuits with ring resonators. InGaAs photodetectors are evanescently coupled to the silicon waveguide with an efficiency of 0.8A/W. The fabrication has been demonstrated at 200mm wafer scale in a microelectronics clean room for CMOS compatibility. For off-chip communication, silicon on InP evanescent laser have been realized with an innovative design where the cavity is defined in silicon and the gain localized in the QW of bonded InP hererostructure. The investigated devices operate at continuous wave regime with room temperature threshold current below 100 mA, the side mode suppression ratio is as high as 20dB, and the fibercoupled output power is {7mW. Direct modulation can be achieved with already 6G operation.

  17. Der Einfluss des mikrovaskulären Systems auf das Überleben eines Hauttransplantats

    Motsch, Benjamin

    2017-01-01

    Transplantierte Organe benötigen eine zuverlässige Versorgung über das Gefäßsystem. Daher richtet diese Studie ihr Augenmerk darauf, ob eine Hemmung von Thrombozyten, sowohl allein als auch in Kombination mit einem mTOR-Hemmer, einen positiven Effekt auf die Ausprägung der mikrovaskulären Struktur in Hauttransplantaten bei einem allogenen Mausmodell hat. Für die Hauttransplantation wurde die Haut von C57BL6 (H-2b) als Spendertiere auf CBA/J(H-2k) Mäuse übertragen. Auf diese Weise wurde eine v...

  18. Einfluss verschiedener Traubenmost-Konzentrierungsverfahren auf die Weinqualität

    Weber, Dirk

    2006-01-01

    Auf internationaler Ebene wurden seit längerer Zeit Bedeutung und Konsequenzen einer Zulassung „neuer önologischer Verfahren“ erörtert. Seit 1998 führte man diese Diskussion auch in Deutschland. Diese neuen Verfahren setzten internationale Wettbewerber zum Teil bereits erfolgreich ein. Um auf dem internationalen Markt mit diesen Weinen konkurrieren zu können und im Rahmen der Chancen-Gleichheit, kam in der deutschen Weinbranche der Wunsch auf, diese Verfahren auch hier zuzulassen. Eines diese...

  19. Modeling of High-Speed InP DHBTs using Electromagnetic Simulation Based De-embedding

    Johansen, Tom Keinicke; Krozer, Viktor; Konczykowska, Agnieszka

    2006-01-01

    In this paper an approach for high-speed InP DHBT modeling valid to 110 GHz is reported. Electromagnetic (EM) simulation is applied to predict the embedded network model caused by pad parasitics. The form of the parasitic network calls for a 4-step de-embedding approach. Applying direct parameter...... extraction on the de-embedded device response leads to accurate small-signal model description of the InP DHBT. An parameter extraction approach is described for the Agilent HBT model, which assures consistency between large-signal and bias-dependent smallsignal modeling....

  20. Saturation broadening effect in an InP photonic-crystal nanocavity switch

    Yu, Yi; Palushani, Evarist; Heuck, Mikkel

    2014-01-01

    Pump-probe measurements on InP photonic-crystal nanocavities show large-contrast fast switching at low pulse energy. For large pulse energies, large resonance shifts passing across the probe lead to switching contrast saturation and switching time-window broadening. © 2014 OSA.......Pump-probe measurements on InP photonic-crystal nanocavities show large-contrast fast switching at low pulse energy. For large pulse energies, large resonance shifts passing across the probe lead to switching contrast saturation and switching time-window broadening. © 2014 OSA....

  1. Metastability of the phosphorus antisite defect in low-temperature InP

    Mikucki, J.; Baj, M.; Wasik, D.; Walukiewicz, W.; Bi, W. G.; Tu, C. W.

    2000-01-01

    We report on the transport properties of low-temperature (LT) InP/In x Ga 1-x As/InP heterostructures and LT InP thin films. Hall effect measurements performed at hydrostatic pressure up to 1.5 GPa and temperatures ranging from 4.2 K to 250 K on both types of samples as well as Shubnikov-de Haas experiments made on heterostructures clearly reveal the metastable character of phosphorus antisite defects present in LT InP layers. (c) 2000 The American Physical Society

  2. Design and modeling of InP DHBT power amplifiers at millimeter-wave frequencies

    Yan, Lei; Johansen, Tom K.

    2012-01-01

    In this paper, the design and modeling of InP DHBT based millimeter-wave(mm-wave) power amplifiers is described. This includes the modeling of InP DHBT devices and layout parasitics. An EM-circuit co-simulation approach is described to allow all parasitics to be modeled for accurate circuit...... demonstrates a power gain of 4.5dB with a saturated output power of 14.2dBm at 69.2GHz. © 2012 European Microwave Assoc....

  3. Lifetime measurements by open circuit voltage decay in GaAs and InP diodes

    Bhimnathwala, H.G.; Tyagi, S.D.; Bothra, S.; Ghandhi, S.K.; Borrego, J.M.

    1990-01-01

    Minority carrier lifetimes in the base of solar cells made in GaAs and InP are measured by open circuit voltage decay method. This paper describes the measurement technique and the conditions under which the minority carrier lifetimes can be measured. Minority carrier lifetimes ranging from 1.6 to 34 ns in InP of different doping concentrations are measured. A minority carrier lifetime of 6 ns was measured in n-type GaAs which agrees well with the lifetime of 5.7 ns measured by transient microwave reflection

  4. Carrier removal and defect behavior in p-type InP

    Weinberg, I.; Swartz, C. K.; Drevinsky, P. J.

    1992-01-01

    A simple expression, obtained from the rate equation for defect production, was used to relate carrier removal to defect production and hole trapping rates in p-type InP after irradiation by 1-MeV electrons. Specific contributions to carrier removal from defect levels H3, H4, and H5 were determined from combined deep-level transient spectroscopy (DLTS) and measured carrier concentrations. An additional contribution was attributed to one or more defects not observed by the present DLTS measurements. The high trapping rate observed for H5 suggests that this defect, if present in relatively high concentration, could be dominant in p-type InP.

  5. Label swapper device for spectral amplitude coded optical packet networks monolithically integrated on InP.

    Muñoz, P; García-Olcina, R; Habib, C; Chen, L R; Leijtens, X J M; de Vries, T; Robbins, D; Capmany, J

    2011-07-04

    In this paper the design, fabrication and experimental characterization of an spectral amplitude coded (SAC) optical label swapper monolithically integrated on Indium Phosphide (InP) is presented. The device has a footprint of 4.8x1.5 mm2 and is able to perform label swapping operations required in SAC at a speed of 155 Mbps. The device was manufactured in InP using a multiple purpose generic integration scheme. Compared to previous SAC label swapper demonstrations, using discrete component assembly, this label swapper chip operates two order of magnitudes faster.

  6. Use of halide transport in epitaxial growth of InP and related compounds

    Somogyi, K. [Hungarian Academy of Sciences, Budapest (Hungary). Research Inst. for Technical Physics

    1996-12-31

    In this paper methods and results in the InP (and related) growth practice are reviewed, classified and summarized on the basis of the recent literature. The aim is to show the present place and role of the halogen transport in the epitaxial growth. In the case of InP the importance of the classical hydride method is still high. Though MOVPE technique dominates in the case of growth of the compounds with In content, atomic layer epitaxy and selective area growth are successful with auxiliary application of the halogen transport. Chlorine assisted MOVPE has an increasing role.

  7. AFM observation of OMVPE-grown ErP on InP substrates using a new organometal tris(ethylcyclopentadienyl)erbium (Er(EtCp)3)

    Akane, T.; Jinno, S.; Yang, Y.; Kuno, T.; Hirata, T.; Isogai, Y.; Watanabe, N.; Fujiwara, Y.; Nakamura, A.; Takeda, Y.

    2003-01-01

    ErP has been grown on InP(0 0 1) substrates by organometallic vapor phase epitaxy (OMVPE) using a new liquid organic Er source: tris(ethylcyclopentadienyl)erbium (Er(EtCp) 3 ). Morphological change of an ErP layer on InP(0 0 1) is investigated together with that of an overgrown capping InP layer. Optimum growth condition of InP causes islanding on over-monolayer-ErP. A relatively low overgrowth temperature of InP is a key factor for attaining complete capping coverage on ErP

  8. Market analysis offshore wind energy; Marktanalyse Windenergie auf See

    NONE

    2015-07-01

    will implement against the background of high Investment volumes and technical challenges each but usually only a manageable number of projects in Europe per year. The various legal requirements in the area of offshore wind energy, and in particular planning, Licensing and network side should be further coordinated and more interlinked. Considerations are also European regulations and the support systems of our European neighbors. [German] Der Nordsee kommt im Vergleich zur Ostsee aufgrund des verfuegbaren Flaechenangebots ein deutlich groesseres Potenzial zu. Im Vergleich zur Nordsee liegen die erschliessbaren Potenziale der Ostsee allerdings deutlich kuestennaeher, was nicht nur beim Netzanschluss sondern auch beim Bau und Betrieb der Anlagen Effizienzvorteile haben kann. Noch ist unklar, ob die verfuegbaren Flaechen im Kuestenmeer der Ostsee in relevanten Groessenordnung erweitert werden koennen. Der entsprechende Raumplanungsprozess wurde im Jahr 2014 durch Mecklenburg-Vorpommern angestossen. Die Analyse der im Bundesfachplan Offshore festgelegten Cluster, die der Offshore-Netzentwicklungsplan in Zonen fuer die Nord- und Ostsee (1-5) strukturiert, zeigt, dass zumindest in der Ausbauphase bis 2025, ggf. auch bis 2030 die kuestennaeheren Zonen 1 und 2 in Nord- und Ostsee ein ausreichendes Flaechenpotential bieten und zugleich im Hinblick auf einen effizienten und strukturierten Netzausbau erschlossen werden sollten. Der Ausbaupfad bis 2020 ermoeglicht die von der Industrie in Aussicht gestellten Kostendegressionen in Hoehe von ueber 30 Prozent. Die bereits heute erkennbaren Kostensenkungen muessen insofern im Rahmen der Erarbeitung des Ausschreibungsdesigns beruecksichtigt werden. Dies gilt auch fuer die Frage eines optimalen Park- und Anlagendesigns aus energiewirtschaftlicher Sicht. Neben jeweils projektinternen Schwierigkeiten auf Netz- wie auf Windparkseite liegen erhebliche Schnittstellenprobleme zwischen Windpark und Netzanschluss. Dies liegt u.a. an den

  9. Reaktionen auf das Stigma psychischer Erkrankung : Sozialpsychologische Modelle und empirische Befunde

    Rüsch, N

    2010-01-01

    Zusammenfassung. In der jüngeren Forschung zu Stigma und Diskriminierung gewinnt die Frage an Bedeutung, wie Angehörige einer stigmatisierten Minderheit ihre eigene Stigmatisierung wahrnehmen und auf sie reagieren. Aus der sozialpsychologischen Literatur zu anderen Gruppen, etwa ethnischen Minderheiten, liegen gut belegte Modelle zu diesem Thema vor, die bisher jedoch noch kaum auf Menschen mit psychischen Erkrankungen angewandt wurden. Dazu zählen (1) ein Stress-Coping-Modell von St...

  10. Effekte von Xenohormonen auf die limnischen Invertebraten Gammarus fossarum (Crustacea, Amphipoda) und Marisa cornuarietis (Mollusca, Prosobranchia)

    Schirling, Martin

    2005-01-01

    In dieser Arbeit werden Effekte von Xenohormonen auf Gammarus fossarum und Marisa cornuarietis anhand verschiedener Parameter, auf unterschiedlichen biologischen Ebenen dargestellt. In einem Laborexperiment mit G. fossarum, das Grundlage für weitere Untersuchungen im Rahmen dieser Arbeit war, konnte gezeigt werden, dass sich die Stressproteine hsp90 und hsp70 im Laufe der Oocytenreifung gegenläufig verhalten. Sowohl in einem Freilandversuch, bei dem der Einfluss von Kläranlageneinleitern ...

  11. Influence of combustion air guidance on solid matter burnout and on pollutant emissions in grid incinerators; Einfluss der Verbrennungsluftfuehrung auf den Feststoffabbrand und auf das Schadstoffverhalten bei der Hausmuellverbrennung auf dem Rost

    Hunsinger, H.; Seifert, H. [Forschungszentrum Karlsruhe GmbH Technik und Umwelt (Germany). Inst. fuer Technische Chemie

    2003-07-01

    The contribution investigates the influence of combustion air guidance strategies on process optimisation. In particular, it is investigated if efficient burnout correlates with low pollutant emissions and if the effects are similar or contrary for the different process goals. (orig.) [German] Der Einfluss von Brennstoffqualitaeten, der Ofengeometrie sowie von Feuerungsbetriebsparametern auf die Bildungsraten von Schadstoffen wie PCDD/F und NO{sub x} und auf die Transferraten von Schwermetallen, Chlor- und Schwefelverbindungen aus dem Brennstoffbett ins Rauchgas ist zur Zeit nur ungenuegend bekannt. Besonders die Frage, wie die primaere Forderung nach moeglichst vollstaendigem Ausbrand von Rauchgas und Rostasche mit weiteren Zielen wie niedrige Bildungsraten von Schadstoffen und Inertisierung der Rostasche korreliert, zeigt den Bedarf umfassender systematischer Untersuchungen auf. Im Rahmen dieses Beitrags soll als Beispiel fuer Modifikationen des Verbrennungsprozesses der Einfluss unterschiedlicher Verbrennungsluftfuehrungen auf die aufgefuehrten Optimierungsziele vorgestellt werden. Insbesondere soll der Frage nachgegangen werden, ob ein effizienter Ausbrand mit niedrigen Schadstoffbildungsraten korreliert und ob zwischen den Zielgroessen gleiche oder kontraere Wirkungen auftreten. (orig.)

  12. Fabrication and magnetic properties of granular Co/porous InP nanocomposite materials

    Ma Li

    2011-01-01

    Full Text Available Abstract A novel Co/InP magnetic semiconductor nanocomposite was fabricated by electrodeposition magnetic Co nanoparticles into n-type porous InP templates in ethanol solution of cobalt chloride. The content or particle size of Co particles embedded in porous InP increased with increasing deposition time. Co particles had uniform distribution over pore sidewall surface of InP template, which was different from that of ceramic template and may open up new branch of fabrication of nanocomposites. The magnetism of such Co/InP nanocomposites can be gradually tuned from diamagnetism to ferromagnetism by increasing the deposition time of Co. Magnetic anisotropy of this Co/InP nanocomposite with magnetization easy axis along the axis of InP square channel was well realized by the competition between shape anisotropy and magnetocrystalline anisotropy. Such Co/InP nanocomposites with adjustable magnetism may have potential applications in future in the field of spin electronics. PACS: 61.46. +w · 72.80.Tm · 81.05.Rm · 75.75. +a · 82.45.Aa

  13. Thermal crosstalk investigation in an integrated InP multiwavelength laser

    Gilardi, G.; Wale, M.J.; Smit, M.K.

    2012-01-01

    We numerically investigate the thermal crosstalk effects in an integrated InP multiwavelength laser. The multiwavelength laser under investigation consists of a number of Distributed Bragg Reflector lasers and an Arrayed Waveguide Grating. Each laser generates a fixed wavelength and the Arrayed

  14. Electrical properties of bulk InP synthesized by modified horizontal Bridgman method

    Pak, K.; Matsui, M.; Fukuhara, H.; Nishinaga, T.; Nakamura, T.; Yasuda, Y.

    1986-01-01

    High purity polycrystalline InP has been required for preparation of starting materials in LEC pulling. Usually, these materials are synthesized by the horizontal Bridgman (HB) or gradient freeze (GF) method. The major problem for InP synthesis has been attributed to silicon contamination during the growth, as shown by several workers. In a previous paper, the authors proposed a model in which the silicon contamination would occur due to the transport of SiO and In/sub 2/O gas species from the In-P melt to the phosphorus region by the reaction of the melt with the quartz boat in the HB growth system and suggested that the Si concentration in the In-P melt would have an intimate correlation with the temperature in the phosphorus region. However, the effect of the temperature in the phosphorus region on the electrical properties has not been studied in details as of yet. In this note, a modified horizontal Bridgman (MHB) method was developed to reduce the residual donor impurities, and the reduction mechanism is discussed

  15. The etching of InP in HCl solutions : a chemical mechanism

    Notten, P.H.L.

    1984-01-01

    The etch rate of InP in solutions of high HCl concentration was shown to be independent of the applied potential ina wide potential range negative with respect to the flatband value. Dissolution of the solid led to the formation of PH3.The etch rate, which was not mass-transport controlled, was

  16. X-ray diffraction analysis of multilayer porous InP(001) structure

    Lomov, A. A.; Punegov, V. I.; Vasil'ev, A. L.; Nohavica, Dušan; Gladkov, Petar; Kartsev, A. A.; Novikov, D. V.

    2010-01-01

    Roč. 55, č. 2 (2010), s. 182-190 ISSN 1063-7745 Institutional research plan: CEZ:AV0Z20670512 Keywords : silicon layers * INP Subject RIV: JA - Electronics ; Optoelectronics, Electrical Engineering Impact factor: 0.644, year: 2010

  17. Surface protection during plasma hydrogenation for acceptor passivation in InP

    Lopata, J.; Dautremont-Smith, W.C.; Pearton, S.J.; Lee, J.W.; Ha, N.T.; Luftman, H.S.

    1990-01-01

    Various dielectric and metallic films were examined as H-permeable surface protection layers on InP during H 2 or D 2 plasma exposure for passivation of acceptors in the InP. Plasma deposited SiN x , SiO 2 , and a-Si(H) films ranging in thickness from 85 to 225 angstrom were used to protect p-InP during d 2 plasma exposure at 250 degrees C. Optimum protective layer thicknesses were determined by a trade-off between the effectiveness of the layer to prevent P loss from the wafer surface and the ability to diffuse atomic H or D at a rate greater than or equal to that in the underlying InP. SIMS and capacitance-voltage depth profiling were used to determine the extent of D in-diffusion and acceptor passivation respectively. Sputter deposited W and e-beam evaporated Ti films ∼100 Angstrom thick were also evaluated. The W coated sample yielded similar results to those with dielectric films in that acceptors in p-InP were passivated to a similar depth for the same plasma exposure. The 100 Angstrom Ti film, however, did not allow the D to diffuse into the InP substrate. It is surmised that the Ti film trapped the D, thus preventing diffusion into the substrate

  18. Switching characteristics of an InP photonic crystal nanocavity: Experiment and theory

    Yu, Yi; Palushani, Evarist; Heuck, Mikkel

    2013-01-01

    The dynamical properties of an InP photonic crystal nanocavity are experimentally investigated using pump-probe techniques and compared to simulations based on coupled-mode theory. Excellent agreement between experimental results and simulations is obtained when employing a rate equation model...

  19. InP and InAs nanowires hetero- and homojunctions: energetic stability and electronic properties.

    Dionízio Moreira, M; Venezuela, P; Miwa, R H

    2010-07-16

    We performed an ab initio total energy investigation, within the density functional theory, of the energetic stability and the electronic properties of hydrogenated InAs/InP nanowire (NW) heterojunctions, as well as InAs and InP homojunctions composed of different structural arrangements, zinc-blend (zb) and wurtzite (w). For InAs/InP NW heterojunctions our results indicate that w and zb NW heterojunctions are quite similar, energetically, for thin NWs. We also examined the robustness of the abrupt interface through an atomic swap at the InAs/InP interface. Our results support the formation of abrupt (non-abrupt) interfaces in w (zb) InAs/InP heterojunctions. Concerning InAs/InP NW-SLs, our results indicate a type-I band alignment, with the energy barrier at the InP layers, in accordance with experimental works. For InAs or InP zb/w homojunctions, we also found a type-I band alignment for thin NWs, however, on increasing the NW diameter both InAs and InP homojunctions exhibit a type-II band alignment.

  20. Effect of Zinc Incorporation on the Performance of Red Light Emitting InP Core Nanocrystals.

    Xi, Lifei; Cho, Deok-Yong; Besmehn, Astrid; Duchamp, Martial; Grützmacher, Detlev; Lam, Yeng Ming; Kardynał, Beata E

    2016-09-06

    This report presents a systematic study on the effect of zinc (Zn) carboxylate precursor on the structural and optical properties of red light emitting InP nanocrystals (NCs). NC cores were assessed using X-ray photoelectron spectroscopy (XPS), X-ray absorption spectroscopy (XAS), energy-dispersive X-ray spectroscopy (EDX), and high-resolution transmission electron microscopy (HRTEM). When moderate Zn:In ratios in the reaction pot were used, the incorporation of Zn in InP was insufficient to change the crystal structure or band gap of the NCs, but photoluminescence quantum yield (PLQY) increased dramatically compared with pure InP NCs. Zn was found to incorporate mostly in the phosphate layer on the NCs. PL, PLQY, and time-resolved PL (TRPL) show that Zn carboxylates added to the precursors during NC cores facilitate the synthesis of high-quality InP NCs by suppressing nonradiative and sub-band-gap recombination, and the effect is visible also after a ZnS shell is grown on the cores.

  1. Reverse Current Characteristics of InP Gunn Diodes for W-Band Waveguide Applications.

    Kim, Hyun-Seok; Heo, Jun-Woo; Chol, Seok-Gyu; Ko, Dong-Sik; Rhee, Jin-Koo

    2015-07-01

    InP is considered as the most promising material for millimeter-wave laser-diode applications owing to its superior noise performance and wide operating frequency range of 75-110 GHz. In this study, we demonstrate the fabrication of InP Gunn diodes with a current-limiting structure using rapid thermal annealing to modulate the potential height formed between an n-type InP active layer and a cathode contact. We also explore the reverse current characteristics of the InP Gunn diodes. Experimental results indicate a maximum anode current and an oscillation frequency of 200 mA and 93.53 GHz, respectively. The current-voltage characteristics are modeled by considering the Schottky and ohmic contacts, work function variations, negative differential resistance (NDR), and tunneling effect. Although no direct indication of the NDR is observed, the simulation results match the measured data well. The modeling results show that the NDR effect is always present but is masked because of electron emission across the shallow Schottky barrier.

  2. Low-frequency photocurrent oscillations in InP in magnetic field

    Slobodchikov, S.V.; Salikhov, Kh.M.; Kovalevskaya, G.G.

    1994-01-01

    Results of investigations of magnetic field effect on the oscillating photocurrent in InP crytals are presented. It is shown that the magnetic field plays the part of an additional source of photocarrier injection in the sample bulk. 3 refs., 2 figs

  3. InP DHBT MMICs for millimeter-wave front-ends

    Johansen, Tom Keinicke; Hadziabdic, Dzenan; Krozer, Viktor

    2009-01-01

    In this paper, we show advanced MMIC's using InP DHBT technology. In particular, we demonstrate front-end circuits covering a broad frequency range from Q-band to E-band. Realizations of power amplifiers, quadrature VCOs, and sub-harmonic mixers, are presented and experimental results are discussed....

  4. InP integrated photonics : state of the art and future directions

    Williams, Kevin

    2017-01-01

    InP integrated circuits enable transceiver technologies with more than 200Gb/s per wavelength and 2Tb/s per fiber. Advances in monolithic integration are poised to reduce energy. remove assembly complexity, and sustain future year-on-year performance increases.

  5. Thermal stability of atom configurations around Er atoms doped in InP by OMVPE

    Ofuchi, Hironori; Ito, Takashi; Kawamoto, Takeshi; Tabuchi, Masao; Fujiwara, Yasufumi; Takeda, Yoshikazu

    1999-01-01

    It has been found that there is a threshold growth temperature between 550 deg C and 580 deg C for the change of local structure around Er atoms in InP doped Er atoms grown by organometallic vapor phase epitaxy (OMVPE). To understand whether the structure change is induced at the growing surface or during the growth as an in situ annealing, the thermal stability of the local structures around the Er atoms doped in InP by the OMVPE at 530 deg C has been investigated by the extended X-ray absorption fine structure (EXAFS). The EXAFS analysis revealed that the local structure around the Er atoms, which existed substitutionally on In sites in the InP lattice, was stable against the post-growth annealing even for 1 h at 650 deg C. Therefore, it is concluded that the local structures are formed on the growth front, and not in the volume of InP by thermal annealing during or after the growth. (author)

  6. Fabrication and magnetic properties of granular Co/porous InP nanocomposite materials.

    Zhou, Tao; Cheng, Dandan; Zheng, Maojun; Ma, Li; Shen, Wenzhong

    2011-03-31

    A novel Co/InP magnetic semiconductor nanocomposite was fabricated by electrodeposition magnetic Co nanoparticles into n-type porous InP templates in ethanol solution of cobalt chloride. The content or particle size of Co particles embedded in porous InP increased with increasing deposition time. Co particles had uniform distribution over pore sidewall surface of InP template, which was different from that of ceramic template and may open up new branch of fabrication of nanocomposites. The magnetism of such Co/InP nanocomposites can be gradually tuned from diamagnetism to ferromagnetism by increasing the deposition time of Co. Magnetic anisotropy of this Co/InP nanocomposite with magnetization easy axis along the axis of InP square channel was well realized by the competition between shape anisotropy and magnetocrystalline anisotropy. Such Co/InP nanocomposites with adjustable magnetism may have potential applications in future in the field of spin electronics.PACS: 61.46. +w · 72.80.Tm · 81.05.Rm · 75.75. +a · 82.45.Aa.

  7. Oxidation of InP nanowires: a first principles molecular dynamics study.

    Berwanger, Mailing; Schoenhalz, Aline L; Dos Santos, Cláudia L; Piquini, Paulo

    2016-11-16

    InP nanowires are candidates for optoelectronic applications, and as protective capping layers of III-V core-shell nanowires. Their surfaces are oxidized under ambient conditions which affects the nanowire physical properties. The majority of theoretical studies of InP nanowires, however, do not take into account the oxide layer at their surfaces. In this work we use first principles molecular dynamics electronic structure calculations to study the first steps in the oxidation process of a non-saturated InP nanowire surface as well as the properties of an already oxidized surface of an InP nanowire. Our calculations show that the O 2 molecules dissociate through several mechanisms, resulting in incorporation of O atoms into the surface layers. The results confirm the experimental observation that the oxidized layers become amorphous but the non-oxidized core layers remain crystalline. Oxygen related bonds at the oxidized layers introduce defective levels at the band gap region, with greater contributions from defects involving In-O and P-O bonds.

  8. Small- and large-signal modeling of InP HBTs in transferred-substrate technology

    Johansen, Tom Keinicke; Rudolph, Matthias; Jensen, Thomas

    2014-01-01

    In this paper, the small- and large-signal modeling of InP heterojunction bipolar transistors (HBTs) in transferred substrate (TS) technology is investigated. The small-signal equivalent circuit parameters for TS-HBTs in two-terminal and three-terminal configurations are determined by employing...

  9. Application of MSM InP detectors to the measurement of pulsed X-ray radiation

    Ryc, L.; Dobrzanski, L.; Dubecký, L.; Kaczmarczyk, J.; Pfeifer, Miroslav; Riesz, F.; Slysz, W.; Surma, B.

    2008-01-01

    Roč. 163, 4-6 (2008), 559-567 ISSN 1042-0150 R&D Projects: GA MŠk(CZ) LC528 Institutional research plan: CEZ:AV0Z10100523 Keywords : InP detector * X-ray detector * picosecond detector * laser plasma Subject RIV: BH - Optics, Masers, Lasers Impact factor: 0.415, year: 2008

  10. InP and InAs nanowires hetero- and homojunctions: energetic stability and electronic properties

    Dionizio Moreira, M; Venezuela, P; Miwa, R H

    2010-01-01

    We performed an ab initio total energy investigation, within the density functional theory, of the energetic stability and the electronic properties of hydrogenated InAs/InP nanowire (NW) heterojunctions, as well as InAs and InP homojunctions composed of different structural arrangements, zinc-blend (zb) and wurtzite (w). For InAs/InP NW heterojunctions our results indicate that w and zb NW heterojunctions are quite similar, energetically, for thin NWs. We also examined the robustness of the abrupt interface through an atomic As↔P swap at the InAs/InP interface. Our results support the formation of abrupt (non-abrupt) interfaces in w (zb) InAs/InP heterojunctions. Concerning InAs/InP NW-SLs, our results indicate a type-I band alignment, with the energy barrier at the InP layers, in accordance with experimental works. For InAs or InP zb/w homojunctions, we also found a type-I band alignment for thin NWs, however, on increasing the NW diameter both InAs and InP homojunctions exhibit a type-II band alignment.

  11. New connecting elements for cascade photoelectric converters based on InP

    Marichev, A. E.; Pushnyi, B. V.; Levin, R. V.; Lebedeva, N. M.; Prasolov, N. D.; Kontrosh, E. V.

    2018-03-01

    In this paper, we report on the initial studies of connecting elements for cascade photodetectors. The heterostructures used in this work are based on InP. As a connecting element, it is proposed to use nanocrystalline inclusions instead of the tunnel junction. GaP nanocrystals are most suitable for this purpose because this material does not cause absorption of the incident radiation.

  12. X-ray structure amplitudes for GaAs and InP

    Pietsch, U.

    1985-01-01

    The structure amplitudes of GaAs and InP are calculated taking into account the nonspherical parts of the valence electron density by means of a static bond charge model. The best known temperature factors and dispersion coefficients are employed. The calculated structure amplitudes should help determining exactly the shape of X-ray diffraction patterns. (author)

  13. InP based lasers and optical amplifiers with wire-/dot-like active regions

    Reithmaier, J. P.; Somers, A.; Deubert, S.

    2005-01-01

    Long wavelength lasers and semiconductor optical amplifiers based on InAs quantum wire/dot-like active regions were developed on InP substrates dedicated to cover the extended telecommunication wavelength range between 1.4 - 1.65 mm. In a brief overview different technological approaches will be ...

  14. An InP HBT sub-harmonic mixer for E-band wireless communication

    Johansen, Tom Keinicke; Krozer, Viktor

    2010-01-01

    This paper reports on a novel balanced HBT subharmonic mixer (SHM) for E-band wireless communication. An LO spiral type Marchand balun is integrated with the SHM. The SHM has been fabricated in a InP double heterojunction bipolar transistor (DHBT) circuit-oriented technology with fT /fmax = 180GHz...

  15. Design of mm-wave InP DHBT power amplifiers

    Johansen, Tom Keinicke; Yan, Lei

    2011-01-01

    In this paper suitable topologies for mm-wave integrated power amplifiers using InP DHBT technology is investigated. Among the standard topologies for mm-wave power cells: common-emitter, common-base, and cascode configuration, the cascode configuration proves the most promising in terms of output...

  16. Modeling of InP HBTs in Transferred-Substrate Technology for Millimeter-Wave Applications

    Johansen, Tom Keinicke; Rudolph, Matthias; Jensen, Thomas

    2013-01-01

    In this paper, the modeling of InP heterojunction bipolar transistors (HBTs) in transferred substrate (TS) technology is investigated. At first, a direct parameter extraction methodology dedicated to III-V based HBTs is employed to determine the small-signal equivalent circuit parameters from...

  17. EM simulation assisted parameter extraction for the modeling of transferred-substrate InP HBTs

    Johansen, Tom Keinicke; Weimann, Nils; Doerner, Ralf

    2017-01-01

    In this paper an electromagnetic (EM) simulation assisted parameters extraction procedure is demonstrated for accurate modeling of down-scaled transferred-substrate InP HBTs. The external parasitic network associated with via transitions and device electrodes is carefully extracted from calibrate...

  18. Electrical and thermal characterization of single and multi-finger InP DHBTs

    Midili, Virginio; Nodjiadjim, V.; Johansen, Tom Keinicke

    2015-01-01

    This paper presents the characterization of single and multi-finger Indium Phosphide Double Heterojunction Bipolar transistors (InP DHBTs). It is used as the starting point for technology optimization. Safe Operating Area (SOA) and small signal AC parameters are investigated along with thermal ch...

  19. Design procedure for millimeter-wave InP DHBT stacked power amplifiers

    Squartecchia, Michele; Johansen, Tom Keinicke; Midili, Virginio

    2015-01-01

    The stacked-transistor concept for power amplifiers (PA) has been investigated in this work. Specifically, this architecture has been applied in the design of millimeter-wave monolithic microwave integrated circuits (MMICs) using indium phosphide (InP) double heterojunction bipolar transistors...

  20. Defect formation in n-type InP at elevated temperatures of irradiation

    Kozlovskij, V.V.; Kol'chenko, T.I.; Lomako, V.M.; Moroz, S.E.

    1990-01-01

    Effect of irradiation temperature within 25-250 deg C traps in InP. Rate of most deep level introduction, as well as, rate of charge carrier removing at the increase of irradiation temperature are shown to decrease and it is explained by defect annealing occuring simultaneously with irradiation

  1. Passive InP regenerator integrated on SOI for the support of broadband silicon modulators

    Tassaert, M.; Dorren, H.J.S.; Roelkens, G.; Raz, O.

    2012-01-01

    Passive signal regeneration based on the Membrane InP Switch (MIPS) is demonstrated. Because of the high confinement of light in the active region of the MIPS, the device acts as a saturable absorber with a highly non-linear response. Using this effect, the extinction ratio (ER) of low-ER signals

  2. Label swapper device for spectral amplitude coded optical packet networks monolithically integrated on InP

    Muñoz, P.; García-Olcina, R.; Habib, C.; Chen, L.R.; Leijtens, X.J.M.; Vries, de T.; Robbins, D.J.; Capmany, J.

    2011-01-01

    In this paper the design, fabrication and experimental characterization of an spectral amplitude coded (SAC) optical label swapper monolithically integrated on Indium Phosphide (InP) is presented. The device has a footprint of 4.8x1.5 mm2 and is able to perform label swapping operations required in

  3. Mid-IR optical properties of silicon doped InP

    Panah, Mohammad Esmail Aryaee; Han, Li; Norrman, Kion

    2017-01-01

    of growth conditions on the optical and electrical properties of silicon doped InP (InP:Si) in the wavelength range from 3 to 40 μm was studied. The carrier concentration of up to 3.9 × 1019 cm-3 is achieved by optimizing the growth conditions. The dielectric function, effective mass of electrons and plasma...

  4. InP monolithically integrated label swapper device for spectral amplitude coded optical packet networks

    Muñoz, P.; García-Olcina, R.; Doménech, J.D.; Rius, M.; Sancho, J.C.; Capmany, J.; Chen, L.R.; Habib, C.; Leijtens, X.J.M.; Vries, de T.; Heck, M.J.R.; Augustin, L.M.; Nötzel, R.; Robbins, D.J.

    2010-01-01

    In this paper a label swapping device, for spectral amplitude coded optical packet networks, fully integrated using InP technology is presented. Compared to previous demonstrations using discrete component assembly, the device footprint is reduced by a factor of 105 and the operation speed is

  5. Ultrafast recombination in H+ bombarded InP and GaAs: Consequences for the carrier distribution functions

    Lamprecht, K.F.; Juen, S.; Hoepfel, R.A.; Palmetshofer, L.

    1992-01-01

    The authors studied the lifetimes and the luminescence spectra of photoexcited carriers in H + bombarded InP and GaAs for different damage doses by means of femtosecond luminescence spectroscopy. For InP the lifetime decreases down to 95 fs for the highest dose, whereas for GaAs no shorter lifetime than 650 fs could be observed. With decreasing lifetime they observe an increase of the high energy tail of the time-integrated luminescence spectrum which is even inverted for the 95 fs InP sample

  6. Determination of the spin orbit coupling and crystal field splitting in wurtzite InP by polarization resolved photoluminescence

    Chauvin, Nicolas; Mavel, Amaury; Jaffal, Ali; Patriarche, Gilles; Gendry, Michel

    2018-02-01

    Excitation photoluminescence spectroscopy is usually used to extract the crystal field splitting (ΔCR) and spin orbit coupling (ΔSO) parameters of wurtzite (Wz) InP nanowires (NWs). However, the equations expressing the valence band splitting are symmetric with respect to these two parameters, and a choice ΔCR > ΔSO or ΔCR InP NWs grown on silicon. The experimental results combined with a theoretical model and finite difference time domain calculations allow us to conclude that ΔCR > ΔSO in Wz InP.

  7. Time-of-flight neutron diffraction investigation of temperature factors in the Zn blende semiconductor InP

    Ferrari, C.; Bocchi, C.; Fornari, R.; Moze, O.; Wilson, C.C.

    1992-01-01

    A structural investigation of the Zn blende structure semiconductor InP has been carried out using the single crystal diffractometer SXD at the pulsed neutron facility ISIS. The ability to measure structure factors accurately at large Q values even with highly absorbing materials such as InP is demonstrated. Measurements were performed on a single crystal of InP at 293, 100 and 50 K with the crystallographic axis mounted perpendicular to the scattering plane. This enabled collection of (hhl) reflections up to a maximum with Miller indices (10, 10, 8). (orig.)

  8. High resolution resonant Raman scattering in InP and GaAs

    Kernohan, E.T.M.

    1996-04-01

    Previous studies of III-V semiconductors using resonant Raman scattering have concentrated on measuring the variations in scattering intensity under different excitation conditions. The shape of the Raman line also contains important information, but this has usually been lost because the low signal strengths mean that resolution has been sacrificed for sensitivity. It might therefore be expected that further insights into the processes involved in Raman scattering could be obtained by using high resolution methods. In this thesis I have measured single- and multiple- phonon scattering from bulk GaAs and InP with a spectral resolution better than the intrinsic widths of the Raman lines. For scattering in the region of one longitudinal optic (LO) phonon energy, it is found that in InP the scattering in the allowed and forbidden configurations occur at different Raman shifts, above and below the zone-centre phonon energy respectively. These shifts are used to determine the scattering processes involved, and how they differ between InP and GaAs. The lineshapes obtained in multiple-phonon scattering are found to depend strongly on the excitation energy used, providing evidence for the presence of intermediate resonances. The measured spectra are used to provide information about the phonon dispersion of InP, whose dispersion it is difficult to measure in any other way, and the first evidence is found for an upward dispersion of the LO mode. Raman lineshapes are measured for InP in a magnetic field. The field alters the electronic bandstructure, leading to a series of strong resonances in the Raman efficiency due to interband magneto-optical transitions between Landau levels. This allows multiphonon processes up to sixth-order to be investigated. (author)

  9. Lattice location of diffused Zn atoms in GaAs and InP single crystals

    Chan, L.Y.; Yu, K.M.; Ben-Tzur, M.; Haller, E.E.; Jaklevic, J.M.; Walukiewicz, W.; Hanson, C.M.

    1991-01-01

    We have investigated the saturation phenomenon of the free carrier concentration in p-type GaAs and InP single crystals doped by zinc diffusion. The free hole saturation occurs at 10 20 cm -3 for GaAs, but the maximum concentration for InP appears at mid 10 18 cm -3 . The difference in the saturation hole concentrations for these materials is investigated by studying the incorporation and the lattice location of the impurity zinc, an acceptor when located on a group III atom site. Zinc is diffused into the III-V wafers in a sealed quartz ampoule. Particle-induced x-ray emission with ion-channeling techniques are employed to determine the exact lattice location of the zinc atoms. We have found that over 90% of all zinc atoms occupy Ga sites in the diffused GaAs samples, while for the InP case, the zinc substitutionality is dependent on the cooling rate of the sample after high-temperature diffusion. For the slowly cooled sample, a large fraction (∼90%) of the zinc atoms form random precipitates of Zn 3 P 2 and elemental Zn. However, when rapidly cooled only 60% of the zinc forms such precipitates while the rest occupies specific sites in the InP. We analyze our results in terms of the amphoteric native defect model. We show that the difference in the electrical activity of the Zn atoms in GaAs and InP is a consequence of the different location of the Fermi level stabilization energy in these two materials

  10. Nagelbefall kann bei Patienten mit Psoriasis auf eine Enthesiopathie hinweisen.

    Castellanos-González, Maria; Joven, Beatriz Esther; Sánchez, Julio; Andrés-Esteban, Eva María; Vanaclocha-Sebastián, Francisco; Romero, Pablo Ortiz; Díaz, Raquel Rivera

    2016-11-01

    Obwohl subklinische Enthesiopathie ein gut etabliertes diagnostisches Merkmal der Psoriasisarthritis (PsA) ist, wird sie häufig übersehen, da viele Patienten asymptomatisch sind. Gäbe es klinische Hinweise auf das Vorliegen einer Enthesiopathie, würde dies den Klinikern die Möglichkeit eröffnen, eine PsA frühzeitig zu diagnostizieren. Es wurde eine monozentrische prospektive Studie mit insgesamt 90 Psoriasis-Patienten durchgeführt, um mittels Ultraschall das Vorliegen von Enthesenanomalien zu untersuchen und eine Korrelation mit dem Befall der Nägel festzustellen. Enthesenanomalien wurden bei 23 Patienten (25,5 %) gefunden, von denen 19 (82,6 %) Nagelbefall aufwiesen. Bei 4 Patienten waren die Nägel nicht betroffen. Enthesiopathie lag bei 31,1 % (19/61) der Patienten mit Onychopathie vor, von den Patienten ohne Nagelbefall litten nur 13,8 % (4/29) an Enthesiopathie (p = 0,07). Zwischen dem Target-NAPSI-Score und dem Vorliegen einer Enthesiopathie bestand eine signifikante Korrelation. Eine signifikante Korrelation bestand darüber hinaus auch zwischen dem Vorliegen einer Enthesiopathie und der Anzahl der betroffenen Nägel (p = 0,035). Klinische Belege für eine Onychopathie können der Schlüssel für die frühe Diagnose einer Enthesiopathie bei Psoriasis-Patienten sein. © 2016 Deutsche Dermatologische Gesellschaft (DDG). Published by John Wiley & Sons Ltd.

  11. Die Etablierung massenspektrometrischer quantitativer Studien des Herzproteoms während der embryonalen Entwicklung und der Alterung

    Konzer, Anne

    2012-01-01

    Neue Erkenntnisse über die physiologischen, molekularen und pathologischen Prozesse im Herzen konnten im letzten Jahrzehnt anhand von Modellorganismen gewonnen werden. Die Entwicklung neuer Techniken ermöglichte außerdem die Etablierung umfangreicher und eindrucksvoller Studien basierend auf den neusten Mikroskopieverfahren, auf globalen Genexpressionsanalysen (Microarray) sowie auf modernen Massenspektrometrie (MS)- basierenden Proteinanalysen anhand von hochauflösenden Tandem-Massenspektrom...

  12. Coupling between magnetic and optical properties of stable Au-Fe solid solution nanoparticles

    De Julian Fernandez, C; Novak, R L; Bogani, L; Caneschi, A [INSTM RU at the Department of Chemistry of the University of Firenze, via della Lastruccia 3, 50019 Sesto Fiorentino (Italy); Mattei, G; Mazzoldi, P [Department of Physics, CNISM and University of Padova, via Marzolo 8, 35131 Padova (Italy); Paz, E; Palomares, F J [Instituto de Ciencia de Materiales de Madrid (CSIC), Cantoblanco, 28049 Madrid (Spain); Cavigli, L, E-mail: cesar.dejulian@unifi.it [Department of Physics-LENS, University of Florence, via Sansone 1, 50019 Sesto Fiorentino (Italy)

    2010-04-23

    Au-Fe nanoparticles constitute one of the simplest prototypes of a multifunctional nanomaterial that can exhibit both magnetic and optical (plasmonic) properties. This solid solution, not feasible in the bulk phase diagram in thermal equilibrium, can be formed as a nanostructure by out-of-equilibrium processes. Here, the novel magnetic, optical and magneto-optical properties of ion-implanted Au-Fe solid solution nanoparticles dispersed in a SiO{sub 2} matrix are investigated and correlated. The surface plasmon resonance of the Au-Fe nanoparticles with almost equicomposition is strongly damped when compared to pure Au and to Au-rich Au-Fe nanoparticles. In all cases, the Au atoms are magnetically polarized, as measured by x-ray magnetic circular dichroism, and ferromagnetically coupled with Fe atoms. Although the chemical stability of Au-Fe nanoparticles is larger than that of Fe nanoparticles, both the magnetic moment per Fe atom and the order temperature are smaller. These results suggest that electronic and magnetic properties are more influenced by the hybridization of the electronic bands in the Au-Fe solid solution than by size effects. On the other hand, the magneto-optical transitions allowed in the vis-nIR spectral regions are very similar. In addition, we also observe, after studying the properties of thermally treated samples, that the Au-Fe alloy is stabilized, not by surface effects, but by the combination of the out-of-equilibrium nature of the ion implantation technique and by changes in the properties due to size effects.

  13. Coupling between magnetic and optical properties of stable Au-Fe solid solution nanoparticles

    De Julian Fernandez, C; Novak, R L; Bogani, L; Caneschi, A; Mattei, G; Mazzoldi, P; Paz, E; Palomares, F J; Cavigli, L

    2010-01-01

    Au-Fe nanoparticles constitute one of the simplest prototypes of a multifunctional nanomaterial that can exhibit both magnetic and optical (plasmonic) properties. This solid solution, not feasible in the bulk phase diagram in thermal equilibrium, can be formed as a nanostructure by out-of-equilibrium processes. Here, the novel magnetic, optical and magneto-optical properties of ion-implanted Au-Fe solid solution nanoparticles dispersed in a SiO 2 matrix are investigated and correlated. The surface plasmon resonance of the Au-Fe nanoparticles with almost equicomposition is strongly damped when compared to pure Au and to Au-rich Au-Fe nanoparticles. In all cases, the Au atoms are magnetically polarized, as measured by x-ray magnetic circular dichroism, and ferromagnetically coupled with Fe atoms. Although the chemical stability of Au-Fe nanoparticles is larger than that of Fe nanoparticles, both the magnetic moment per Fe atom and the order temperature are smaller. These results suggest that electronic and magnetic properties are more influenced by the hybridization of the electronic bands in the Au-Fe solid solution than by size effects. On the other hand, the magneto-optical transitions allowed in the vis-nIR spectral regions are very similar. In addition, we also observe, after studying the properties of thermally treated samples, that the Au-Fe alloy is stabilized, not by surface effects, but by the combination of the out-of-equilibrium nature of the ion implantation technique and by changes in the properties due to size effects.

  14. Coupling between magnetic and optical properties of stable Au-Fe solid solution nanoparticles

    de Julián Fernández, C.; Mattei, G.; Paz, E.; Novak, R. L.; Cavigli, L.; Bogani, L.; Palomares, F. J.; Mazzoldi, P.; Caneschi, A.

    2010-04-01

    Au-Fe nanoparticles constitute one of the simplest prototypes of a multifunctional nanomaterial that can exhibit both magnetic and optical (plasmonic) properties. This solid solution, not feasible in the bulk phase diagram in thermal equilibrium, can be formed as a nanostructure by out-of-equilibrium processes. Here, the novel magnetic, optical and magneto-optical properties of ion-implanted Au-Fe solid solution nanoparticles dispersed in a SiO2 matrix are investigated and correlated. The surface plasmon resonance of the Au-Fe nanoparticles with almost equicomposition is strongly damped when compared to pure Au and to Au-rich Au-Fe nanoparticles. In all cases, the Au atoms are magnetically polarized, as measured by x-ray magnetic circular dichroism, and ferromagnetically coupled with Fe atoms. Although the chemical stability of Au-Fe nanoparticles is larger than that of Fe nanoparticles, both the magnetic moment per Fe atom and the order temperature are smaller. These results suggest that electronic and magnetic properties are more influenced by the hybridization of the electronic bands in the Au-Fe solid solution than by size effects. On the other hand, the magneto-optical transitions allowed in the vis-nIR spectral regions are very similar. In addition, we also observe, after studying the properties of thermally treated samples, that the Au-Fe alloy is stabilized, not by surface effects, but by the combination of the out-of-equilibrium nature of the ion implantation technique and by changes in the properties due to size effects.

  15. Vapor-phase etching of InP using anhydrous HCl and PH/sub 3/ gas

    Pak, K.; Koide, Y.; Imai, K.; Yoshida, A.; Nakamura, T.; Yasuda, Y.; Nishinaga, T.

    1986-01-01

    In situ etching of the substrate surface for vapor-phase epitaxy is a useful technique for obtaining a smooth and damage-free surface prior to the growth. Previous work showed that the incorporation of in situ etching of InP substrate with anhydrous HCl gas resulted in a significant improvement in the surface morphologies for MOVPE-grown InGaAs/InP and InP epitaxial layers. However, the experiment on the HCl etching of the InP substrate for a wide temperature range has not been performed as yet. In this note, the authors describe the effect of the substrate temperature on the etching morphology of InP substrate by using the anhydrous HCl and PH/sub 3/ gases. In the experiment, they used a standard MOVPE horizontal system. A quartz reactor tube in a 60 mm ID, 60 cm long, was employed

  16. Influence of the cone angle and crystal shape on the formation of twins in InP crystals

    Li, Xiaolan; Yang, Ruixia; Yang, Fan; Sun, Tongnian; Sun, Niefeng

    2012-01-01

    We present the investigation of twinning phenomena of LEC InP crystal growth which has been carried out in our laboratory in recent years. It is observed that the yield of twin-free single crystal InP can be grown by control the cone angle and crystal shape of a gradually increased diameter. Twin formation has been correlated to many growth factors. The influence of ingot shape on the formation of twins can be looked as the conical angle dependent twin probability of InP crystals. Twin-free InP crystals can be grown by large cone angle over 75 to 90 . (copyright 2012 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  17. Epitaxial growth and processing of InP films in a ``novel`` remote plasma-MOCVD apparatus

    Bruno, G. [Bari Univ. (Italy). Centro di Studio per la Chimica; Losurdo, M. [Bari Univ. (Italy). Centro di Studio per la Chimica; Capezzuto, P. [Bari Univ. (Italy). Centro di Studio per la Chimica; Capozzi, V. [Bari Univ. (Italy). Ist. di Fisica; Lorusso, F.G. [Bari Univ. (Italy). Ist. di Fisica; Minafra, A. [Bari Univ. (Italy). Ist. di Fisica

    1996-06-01

    A new remote plasma MOCVD apparatus for the treatment and deposition of III-V materials and, specifically, of indium phosphide, has been developed. The plasma source is used to produce hydrogen atoms and to predissociate phosphine for, respectively, the reduction of native oxide on InP substrate surface and the InP deposition. In situ diagnostics by optical emission spectroscopy, mass spectrometry, and spectroscopic ellipsometry are used to fingerprint the gas phase and the growth surface. The plasma cleaning process effectively reduce the InP oxide layer without surface damage. Indium phosphide epilayers deposited from trimethylindium and plasma activated PH{sub 3} show singular photoluminescence spectra with signal intensity higher than that of the best InP film deposited under conventional MOCVD condition (without PH{sub 3} plasma preactivation). (orig.)

  18. Peculiarities of defect formation in InP single crystals doped with donor (S, Ge) and acceptor (Zn) impurities

    Mikryukova, E.V.; Morozov, A.N.; Berkova, A.V.; Nashel'skij, A.Ya.; Yakobson, S.V.

    1988-01-01

    Peculiarities of dislocation and microdefect formation in InP monocrystals doped with donor (S,Ge) and acceptor (Zn) impurities are investigated by the metallography. Dependence of dislocation density on the concentration of alloying impurity is established. Microdefects leading to the appearance of 5 different types of etch figures are shown to be observed in doped InP monocrystals. The mechanism of microdefect formation is suggested

  19. Performance, defect behavior and carrier enhancement in low energy, proton irradiated p+nn+ InP solar cells

    Weinberg, I.; Rybicki, G. C.; Vargas-Aburto, C.; Jain, R. K.; Scheiman, D.

    1994-01-01

    The highest AMO efficiency (19.1 percent) InP solar cell consisted of an n+pp+ structure epitaxially grown on a p+ InP substrate. However, the high cost and relative fragility of InP served as motivation for research efforts directed at heteroepitaxial growth of InP on more viable substrates. The highest AMO efficiency (13.7 percent) for this type of cell was achieved using a GaAs substrate. Considering only cost and fracture toughness, Si would be the preferred substrate. The fact that Si is a donor in InP introduces complexities which are necessary in order to avoid the formation of an efficiency limiting counterdiode. One method used to overcome this problem lies in employing an n+p+ tunnel junction in contact with the cell's p region. A simpler method consists of using an n+ substrate and processing the cell in the p+ nn+ configuration. This eliminates the need for a tunnel junction. Unfortunately, the p/n configuration has received relatively little attention the best cell with this geometry having achieved an efficiency of 17 percent. Irradiation of these homoepitaxial cells, with 1 Mev electrons, showed that they were slightly more radiation resistant than diffused junction n/p cells. Additional p/n InP cells have been processed by some activity aimed at diffusion. Currently, there has been some activity aimed at producing heteroepitaxial p+nn+ InP cells using n+ Ge substrates. Since, like Si, Ge is an n-dopant in InP, use of this configuration obviates the need for a tunnel junction. Obviously, before attempting to process heteroepitaxial cells, one must produce a reasonably good homoepitaxial cell. In the present case we focus our attention on homoepitaxially on an n+ Ge substrate.

  20. Growth of InP directly on Si by corrugated epitaxial lateral overgrowth

    Metaferia, Wondwosen; Kataria, Himanshu; Sun, Yan-Ting; Lourdudoss, Sebastian

    2015-01-01

    In an attempt to achieve an InP–Si heterointerface, a new and generic method, the corrugated epitaxial lateral overgrowth (CELOG) technique in a hydride vapor phase epitaxy reactor, was studied. An InP seed layer on Si (0 0 1) was patterned into closely spaced etched mesa stripes, revealing the Si surface in between them. The surface with the mesa stripes resembles a corrugated surface. The top and sidewalls of the mesa stripes were then covered by a SiO 2 mask after which the line openings on top of the mesa stripes were patterned. Growth of InP was performed on this corrugated surface. It is shown that growth of InP emerges selectively from the openings and not on the exposed silicon surface, but gradually spreads laterally to create a direct interface with the silicon, hence the name CELOG. We study the growth behavior using growth parameters. The lateral growth is bounded by high index boundary planes of {3 3 1} and {2 1 1}. The atomic arrangement of these planes, crystallographic orientation dependent dopant incorporation and gas phase supersaturation are shown to affect the extent of lateral growth. A lateral to vertical growth rate ratio as large as 3.6 is achieved. X-ray diffraction studies confirm substantial crystalline quality improvement of the CELOG InP compared to the InP seed layer. Transmission electron microscopy studies reveal the formation of a direct InP–Si heterointerface by CELOG without threading dislocations. While CELOG is shown to avoid dislocations that could arise due to the large lattice mismatch (8%) between InP and Si, staking faults could be seen in the layer. These are probably created by the surface roughness of the Si surface or SiO 2 mask which in turn would have been a consequence of the initial process treatments. The direct InP–Si heterointerface can find applications in high efficiency and cost-effective Si based III–V semiconductor multijunction solar cells and optoelectronics integration. (paper)

  1. Synthese von analogen Filtern auf einer rekonfigurierbaren Hardware-Architektur mittels eines Genetischen Algorithmus

    S. Trendelenburg

    2008-05-01

    Full Text Available Rekonfigurierbare Analog-Arrays (FPAAs sind der Versuch, die Vorteile der aus der digitalen Welt bekannten FPGAs (Flexibilität, Entwurfsgeschwindigkeit auch für analoge Anwendungen verfügbar zu machen. Aufgrund der Vielfalt der analogen Schaltungstechnik ist die Abbildung von vorgegebenen Schaltungskonzepten auf eine FPAA-Architektur nicht immer einfach lösbar.

    Diese Arbeit stellt einen neuen Ansatz für die Synthese von Filtern auf einer FPAA-Architektur für zeitkontinuierliche Analogfilter mittels eines Genetischen Algorithmus (GA vor. Anhand eines Matlab-Modells des FPAA, das eine gute übereinstimmung mit Simulationen des FPAA auf Transistorebene aufweist, wurde gezeigt, dass eine große Vielzahl verschiedener Filterstrukturen auf dieser Architektur dargestellt werden kann. Daraufhin wurde ein Genetischer Algorithmus entwickelt, der es erlaubt, aus einer gegebenen Filterspezifikation Konfigurationsdatensätze zu synthetisieren, die den gewünschten Filter auf die FPAA-Architektur abbilden.

  2. Surface passivation of InP solar cells with InAlAs layers

    Jain, Raj K.; Flood, Dennis J.; Landis, Geoffrey A.

    1993-01-01

    The efficiency of indium phosphide solar cells is limited by high values of surface recombination. The effect of a lattice-matched In(0.52)Al(0.48)As window layer material for InP solar cells, using the numerical code PC-1D is investigated. It was found that the use of InAlAs layer significantly enhances the p(+)n cell efficiency, while no appreciable improvement is seen for n(+)p cells. The conduction band energy discontinuity at the heterojunction helps in improving the surface recombination. An optimally designed InP cell efficiency improves from 15.4 percent to 23 percent AMO for a 10 nm thick InAlAs layer. The efficiency improvement reduces with increase in InAlAs layer thickness, due to light absorption in the window layer.

  3. Model of deep centers formation and reactions in electron irradiated InP

    Sibille, A.; Suski, J.; Gilleron, M.

    1986-01-01

    We present a model of the production of deep centers and their reactions following electron irradiations in InP. We propose that the dominant hole traps in p-InP and electron traps in p + n InP junctions are complexes between shallow acceptors and a common intrinsic entity, the phosphorus interstitial or vacancy. The reactions observed below and above room temperature are then due to a local mobility of this entity, which can be obtained as well by thermal as by electronic stimulation of the reactions. This model implies the long-range migration (at least down to 16 K) of this entity, and explains the strongly different behavior of n-InP compared to p-InP samples

  4. The effect of phosphorus and sulfur treatment on the surface properties of InP

    Iyer, R.; Chang, R. R.; Dubey, A.; Lile, D. L.

    1988-01-01

    Experimental results are presented for InP surfaces treated by using red phosphorus as a source to create an excess overpressure of phosphorus during annealing and prior to silicon dioxide deposition. The surface has been probed by in situ photoluminescence, noncontacting remote gate C-V, and conventional high-frequency and quasi-static C-V methods. A study has also been made of the surface of sulfurized InP following heating in aqueous (NH4)2S(x). MISFETs fabricated using the benefits of these surface treatments show high transconductances and stabilities approaching those of thermal SiO2/Si with less than 5-percent variation in drain current over a 12-hr period.

  5. Effect of reactor neutron radiation and temperature on the structure of InP single crystals

    Bojko, V.M.; Kolin, N.G.; Merkurisov, D.I.; Bublik, V.T.; Voronova, M.I.; Shcherbachev, K.D.

    2006-01-01

    The structural characteristics of InP single crystals have been investigated depending on the radiation effects produced by fast and full spectrum neutrons and subsequent heat treatment. A lattice period in InP single crystals decreases under neutron irradiation. Fast neutrons make the main contribution into the change of the lattice period. Availability of the thermal neutrons initiates the formation of Sn atoms, but does not make a significant influence on the change of the lattice period. Heat treatment of the irradiated samples up to 600 deg C causes the annealing of radiation defects and recovery of the lattice period. With increasing neutron fluences a lattice period becomes even higher than before irradiation [ru

  6. The lower yield point of InP and GaAs

    Siethoff, H.

    1987-01-01

    A study of the strain-rate and temperature dependence of the lower yield stress (τ ly ) in undoped InP and of the strain-rate dependence of τ ly in undoped and Zn-doped GaAs is reported. The deformation along (123) orientation was carried out in compression at constant strain rates ranging from 10 -5 to 10 -2 s -1 . The temperature range extended from 540 to 780 0 C. The activation energy and stress exponent of the dislocation velocity were calculated. Experiments have shown that τ ly of InP depends on temperature and strain rate in a manner similar to other semiconductors like Si and InSb, whereas τ ly of GaAs shows an unusual strain-rate dependence

  7. Effect of uniaxial stress on free and bismuth-bound excitons in InP

    Weber, G.; Ruehle, W.

    1979-01-01

    The reduction of the shear deformation potentials of holes bound to the isoelectronic impurity Bi in InP is determined by piezoluminescence. It is compared with the corresponding reduction for holes bound to the Coulomb-type acceptors C and Zn. The theory for an effective mass acceptor describes well the cases of C and Zn. However, additional effects as local strain and Stark fields must be involved in the case of Bi leading to an extremely large reduction of the deformation potentials. No change in binding energy with applied stress as well as no exchange splitting of the Bi-bound exciton can be detected within experimental accuracy. The stress dependence of the free exciton reflectance reveals values for the band deformation potentials and a value of 0.07 meV for the exchange splitting of the free exciton in InP. (author)

  8. Effects of Be doping on InP nanowire growth mechanisms

    Yee, R. J.; Gibson, S. J.; LaPierre, R. R. [Department of Engineering Physics, Centre for Emerging Device Technologies, McMaster University, Hamilton, Ontario L8S 4L7 (Canada); Dubrovskii, V. G. [St. Petersburg Academic University, Khlopina 8/3, 194021 St. Petersburg (Russian Federation); Ioffe Physical Technical Institute RAS, Politekhnicheskaya 26, 194021 St. Petersburg (Russian Federation)

    2012-12-24

    Be-doped InP nanowires were grown by the gold-assisted vapour-liquid-solid mechanism in a gas source molecular beam epitaxy system. The InP nanowire length versus diameter [L(D)] dependence revealed an unexpected transition with increasing Be dopant concentration. At Be dopant concentration below {approx}10{sup 18} cm{sup -3}, nanowires exhibited the usual inverse L(D) relationship, indicating a diffusion-limited growth regime. However, as dopant concentration increased, the nanowire growth rate was suppressed for small diameters, resulting in an unusual L(D) dependence that increased before saturating in height at about 400 nm. The cause of this may be a change in the droplet chemical potential, introducing a barrier to island nucleation. We propose a model accounting for the limitations of diffusion length and monolayer nucleation to explain this behaviour.

  9. Growth of semiconductor alloy InGaPBi on InP by molecular beam epitaxy

    Wang, K; Wang, P; Pan, W W; Wu, X Y; Yue, L; Gong, Q; Wang, S M

    2015-01-01

    We report the first successful growth of InGaPBi single crystals on InP substrate with Bi concentration far beyond the doping level by gas source molecular beam epitaxy. The InGaPBi thin films reveal excellent surface and structural qualities, making it a promising new III–V compound family member for heterostructures. The strain can be tuned between tensile and compressive by adjusting Ga and Bi compositions. The maximum achieved Bi concentration is 2.2 ± 0.4% confirmed by Rutherford backscattering spectroscopy. Room temperature photoluminescence shows strong and broad light emission at energy levels much smaller than the InP bandgap. (paper)

  10. Transient behavior of interface state continuum at InP insulator-semiconductor interface

    Hasegawa, H.; Masuda, H.; He, L.; Luo, J.K.; Sawada, T.; Ohno, H.

    1987-01-01

    To clarify the drain current drift mechanism in InP MISFETs, an isothermal capacitance transient spectroscopy (ICTS) study of the interface state continuum is made on the anodic Al 2 O 3 /native oxide/ InP MIS system. Capture behavior is temperature-independent, non-exponential and extremely slow, whereas emission behavior is temperature- and bias- dependent, and is much faster. The observed behavior is explained quantitatively by the disorder induced gap state (DIGS) model, where states are distributed both in energy and in space. By comparing the transient behavior of interface states with the observed drift behavior of MISFETs, it is concluded that the electron capture by the DIGS continuum is responsible for the drain current drift of MISFETs. This led to a complete computer simulation of the observed current drift behavior

  11. Structural and electronic properties of zigzag InP nanoribbons with Stone–Wales type defects

    Longo, R C; Carrete, J; Varela, L M; Gallego, L J

    2016-01-01

    By means of density-functional-theoretic calculations, we investigate the structural and electronic properties of a hexagonal InP sheet and of hydrogen-passivated zigzag InP nanoribbons (ZInPNRs) with Stone–Wales (SW)-type defects. Our results show that the influence of this kind of defect is not limited to the defected region but it leads to the formation of ripples that extend across the systems, in keeping with the results obtained recently for graphene and silicene sheets. The presence of SW defects in ZInPNRs causes an appreciable broadening of the band gap and transforms the indirect-bandgap perfect ZInPNR into a direct-bandgap semiconductor. An external transverse electric field, regardless of its direction, reduces the gap in both the perfect and defective ZInPNRs. (paper)

  12. Minority-carrier lifetime in InP as a function of light bias

    Yater, Jane A.; Weinberg, I.; Jenkins, Phillip P.; Landis, Geoffrey A.

    1995-01-01

    Minority-carrier lifetime in InP is studied as a function of doping level and laser intensity using time-resolved photoluminescence. A continuous wave diode laser illuminates bulk InP and acts as a light bias, injecting a steady-state concentration of carriers. A 200 ps laser pulse produces a small transient signal on top of the steady-state luminescence, allowing lifetime to be measured directly as a function of incident intensity. For p-InP, lifetime increases with light bias up to a maximum value. Bulk recombination centers are presumably filled to saturation, allowing minority carriers to live longer. The saturation bias scales with dopant concentration for a particular dopant species. As light bias is increased for n-InP, minority-carrier lifetime increases slightly but then decreases, suggesting radiative recombination as a dominant decay mechanism.

  13. Highly doped InP as a low loss plasmonic material for mid-IR region

    Panah, Mohammad Esmail Aryaee; Takayama, Osamu; Morozov, S. V.

    2016-01-01

    by fitting the calculated infrared reflectance spectra to the measured ones. The retrieved permittivity was then used to simulate surface plasmon polaritons (SPPs) propagation on flat and structured surfaces, and the simulation results were verified in direct experiments. SPPs at the top and bottom......We study plasmonic properties of highly doped InP in the mid-infrared (IR) range. InP was grown by metal-organic vapor phase epitaxy (MOVPE) with the growth conditions optimized to achieve high free electron concentrations by doping with silicon. The permittivity of the grown material was found...... interfaces of the grown epilayer were excited by the prism coupling. A high-index Ge hemispherical prism provides efficient coupling conditions of SPPs on flat surfaces and facilitates acquiring their dispersion diagrams. We observed diffraction into symmetry-prohibited diffraction orders stimulated...

  14. Formation of quantum wires and dots on InP(001) by As/P exchange

    Yang, Haeyeon; Ballet, P.; Salamo, G. J.

    2001-01-01

    We report on the use of in situ scanning tunneling microscopy to study As/P exchange on InP(001) surfaces by molecular beam epitaxy. Results demonstrate that the exchange process can be controlled to selectively produce either quantum wires or quantum dots. 15 nm wide self-assembled nanowires are observed, and they are elongated along the dimer row direction of the InP(001)-2x4 surface with a length of over 1 μm and flat top 2x4 surfaces. In addition, when the nanowires are annealed with no arsenic overpressure, the surface reconstruction transforms from 2x4 to 4x2 and the nanowires transform into dots with a rectangular base and flat top. [copyright] 2001 American Institute of Physics

  15. Formation and characterization of Ni nanostructures in porous InP - from crystallites to wires

    Gerngross, M.-D.; Hrkac, V.; Kienle, L.; Carstensen, J.; Foell, H.

    2013-01-01

    In this work the galvanic formation of Ni crystallites and Ni nanowires with very high aspect ratios (>1000:1) in porous InP is presented. By depositing a dielectric interlayer on the InP pore walls it is possible to produce very high aspect ratio Ni nanowires. The coercivity of these nanowires is about 100 Oe (in-plane) and 240 Oe (out-of-plane), while the coercivity of the crystallites lies in between these values. The in-plane remanence squareness of the Ni nanowires is very low (S ∼ 0.08), out-of-plane it is 0.36. For the Ni crystallites the remanence squareness lies in between the range given for the Ni nanowires. (author)

  16. Overcoming doping limits in MOVPE grown n-doped InP for plasmonic applications

    Panah, Mohammad Esmail Aryaee; Xiao, Sanshui; Lavrinenko, Andrei

    2015-01-01

    Effect of the growth parameters on carrier concentration in MOVPE grown silicon-doped InP is studied. The dopant flow, V/III ratio and substrate temperature are optimized by considering the origin of the doping limits. In addition, two different group V precursors, namely PH3 and TBP, are compare......×1019cm-3 is achieved. Optical properties of the samples are investigated by Fourier transform infrared reflection (FTIR) spectroscopy and are fitted by a Drude-Lorentz function....

  17. Integrated cloud infrastructure of the LIT JINR, PE "NULITS" and INP's Astana branch

    Mazhitova, Yelena; Balashov, Nikita; Baranov, Aleksandr; Kutovskiy, Nikolay; Semenov, Roman

    2018-04-01

    The article describes the distributed cloud infrastructure deployed on the basis of the resources of the Laboratory of Information Technologies of the Joint Institute for Nuclear Research (LIT JINR) and some JINR Member State organizations. It explains a motivation of that work, an approach it is based on, lists of its participants among which there are private entity "Nazarbayev University Library and IT services" (PE "NULITS") Autonomous Education Organization "Nazarbayev University" (AO NU) and The Institute of Nuclear Physics' (INP's) Astana branch.

  18. Temperature Dependence of Interband Transitions in Wurtzite InP Nanowires.

    Zilli, Attilio; De Luca, Marta; Tedeschi, Davide; Fonseka, H Aruni; Miriametro, Antonio; Tan, Hark Hoe; Jagadish, Chennupati; Capizzi, Mario; Polimeni, Antonio

    2015-04-28

    Semiconductor nanowires (NWs) formed by non-nitride III-V compounds grow preferentially with wurtzite (WZ) lattice. This is contrary to bulk and two-dimensional layers of the same compounds, where only zincblende (ZB) is observed. The absorption spectrum of WZ materials differs largely from their ZB counterparts and shows three transitions, referred to as A, B, and C in order of increasing energy, involving the minimum of the conduction band and different critical points of the valence band. In this work, we determine the temperature dependence (T = 10-310 K) of the energy of transitions A, B, and C in ensembles of WZ InP NWs by photoluminescence (PL) and PL excitation (PLE) spectroscopy. For the whole temperature and energy ranges investigated, the PL and PLE spectra are quantitatively reproduced by a theoretical model taking into account contribution from both exciton and continuum states. WZ InP is found to behave very similarly to wide band gap III-nitrides and II-VI compounds, where the energy of A, B, and C displays the same temperature dependence. This finding unveils a general feature of the thermal properties of WZ materials that holds regardless of the bond polarity and energy gap of the crystal. Furthermore, no differences are observed in the temperature dependence of the fundamental band gap energy in WZ InP NWs and ZB InP (both NWs and bulk). This result points to a negligible role played by the WZ/ZB differences in determining the deformation potentials and the extent of the electron-phonon interaction that is a direct consequence of the similar nearest neighbor arrangement in the two lattices.

  19. W-Band InP Wideband MMIC LNA with 30K Noise Temperature

    Weinreb, S.; Lai, R.; Erickson, N.; Gaier, T.; Wielgus, J.

    2000-01-01

    This paper describe a millimeter wave low noise amplifier with extraordinary low noise, low consumption, and wide frequency range. These results are achieved utilizing state-of-the-art InP HEMT transistors coupled with CPW circuit design. The paper describes the transistor models, modeled and measured on-wafer and in-module results at both 300K am 24K operating temperatures for many samples of the device.

  20. New applications of elemental analysis methods using X-rays at the INPE Cyclotron

    Constantinescu, B.; Constantin, F.; Dima, S.; Plostinaru, D.; Popa-Simil, L.

    1990-01-01

    Some results in various samples elemental analysis using PIXE(Particle Induced X-ray Emission) method at INPE U-120 Cyclotron are presented. The main purpose of the research was the determination of metal concentration (Ca,Cr,Mn,Fe,Ni,Cu,Zn) in drug industry materials and products, some tree seeds as environmental pollution indicator, mineral oil and gasoline used in mechanical engineering, cooling water for oil industry equipment. (Author)

  1. Low conversion loss 94 GHz and 188 GHz doublers in InP DHBT technology

    Zhurbenko, Vitaliy; Johansen, Tom Keinicke; Squartecchia, Michele

    2017-01-01

    An Indium Phosphide (InP) Double Heterojunction Bipolar Transistor (DHBT) process has been utilized to design two doublers to cover the 94 GHz and 188 GHz bands. The 94 GHz doubler employs 4-finger DHBTs and provides conversion loss of 2 dB. A maximum output power of nearly 3 dBm is measured whil...... operate over a broad bandwidth. The total circuit area of each chip is 1.41 mm2....

  2. Changes of surface electron states of InP under soft X-rays irradiation

    Yang Zhian; Yang Zushen; Jin Tao; Qui Rexi; Cui Mingqi; Liu Fengqin

    1999-01-01

    Changes of surface electronic states of InP under 1 keV X-ray irradiation is studied by X-ray photoelectron spectroscopy (XPS) and ultraviolet ray energy spectroscopy (UPS). The results show that the soft X-ray irradiation has little effect on In atoms but much on P atoms. The authors analysed the mechanism of irradiation and explained the major effect

  3. Raman spectroscopy for characterization of annealing of ion-implanted InP

    Myers, D.R.; Gourley, P.L.; Vaidyanathan, K.V.; Dunlap, H.L.

    1983-01-01

    Raman spectroscopy has been used as a noncontacting, nondestructive tool to evaluate the properties of Si + - and Be + implanted InP samples annealed at temperatures ranging from 600 to 750C using phospho-silicate glass (PSG) as the encapsulant. Carrier activation, carrier mobility and recovery of damage as a function of anneal temperature obtained from analysis of Raman data agree very well with independent electrical measurements. (author)

  4. InP and GaAs characterization with variable stoichiometry obtained by molecular spray

    Massies, J.; Linh, N. T.; Olivier, J.; Faulconnier, P.; Poirier, R.

    1979-01-01

    Both InP and GaAs surfaces were studied in parallel. A molecular spray technique was used to obtain two semiconductor surfaces with different superficial compositions. The structures of these surfaces were examined by electron diffraction. Electron energy loss was measured spectroscopically in order to determine surface electrical characteristics. The results are used to support conclusions relative to the role of surface composition in establishing a Schottky barrier effect in semiconductor devices.

  5. Aqueous bromine etching of InP: a specific surface chemistry

    Causier, A.; Bouttemy, M.; Gerard, I.; Aureau, D.; Vigneron, J.; Etcheberry, A. [Institut Lavoisier de Versailles, Versailles-Saint-Quentin University, UMR CNRS 8180, 45 Av. des Etats-Unis, 78035 Versailles (France)

    2012-06-15

    The n -InP behaviour in HBr (0.1-1.0 M)/Br{sub 2} (1.25 x 10{sup -2}M) aqueous solutions is studied by AAS, XPS and SEM-FEG. Indium AAS-titrations of the HBr/Br{sub 2} solutions demonstrate that InP undergoes an etching mechanism whatever the HBr/Br{sub 2} formulation. The etching process is always linear with time but its rate depends on the HBr concentration. XPS analyses permit to link the apparent slow-down of the dissolution process when decreasing the HBr molarity from 1.0 M to 0.1 M to the presence of a mixed (In,P){sub ox} oxide layer on the surface. Therefore, the dissolution process of InP in HBr/Br{sub 2} solution appears to be ruled by the surface chemical state (copyright 2012 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  6. Highly doped InP as a low loss plasmonic material for mid-IR region.

    Panah, M E Aryaee; Takayama, O; Morozov, S V; Kudryavtsev, K E; Semenova, E S; Lavrinenko, A V

    2016-12-12

    We study plasmonic properties of highly doped InP in the mid-infrared (IR) range. InP was grown by metal-organic vapor phase epitaxy (MOVPE) with the growth conditions optimized to achieve high free electron concentrations by doping with silicon. The permittivity of the grown material was found by fitting the calculated infrared reflectance spectra to the measured ones. The retrieved permittivity was then used to simulate surface plasmon polaritons (SPPs) propagation on flat and structured surfaces, and the simulation results were verified in direct experiments. SPPs at the top and bottom interfaces of the grown epilayer were excited by the prism coupling. A high-index Ge hemispherical prism provides efficient coupling conditions of SPPs on flat surfaces and facilitates acquiring their dispersion diagrams. We observed diffraction into symmetry-prohibited diffraction orders stimulated by the excitation of surface plasmon-polaritons in a periodically structured epilayer. Characterization shows good agreement between the theory and experimental results and confirms that highly doped InP is an effective plasmonic material aiming it for applications in the mid-IR wavelength range.

  7. Formation mechanisms for the dominant kinks with different angles in InP nanowires.

    Zhang, Minghuan; Wang, Fengyun; Wang, Chao; Wang, Yiqian; Yip, SenPo; Ho, Johnny C

    2014-01-01

    The morphologies and microstructures of kinked InP nanowires (NWs) prepared by solid-source chemical vapor deposition method were examined using scanning electron microscopy (SEM) and high-resolution transmission electron microscopy (HRTEM). Statistical analysis and structural characterization reveal that four different kinds of kinks are dominant in the grown InP NWs with a bending angle of approximately 70°, 90°, 110°, and 170°, respectively. The formation mechanisms of these kinks are discussed. Specifically, the existence of kinks with bending angles of approximately 70° and 110° are mainly attributed to the occurrence of stacking faults and nanotwins in the NWs, which could easily form by the glide of {111} planes, while approximately 90° kinks result from the local amorphorization of InP NWs. Also, approximately 170° kinks are mainly caused by small-angle boundaries, where the insertion of extra atomic planes could make the NWs slightly bent. In addition, multiple kinks with various angles are also observed. Importantly, all these results are beneficial to understand the formation mechanisms of kinks in compound semiconductor NWs, which could guide the design of nanostructured materials, morphologies, microstructures, and/or enhanced mechanical properties.

  8. Unique Three-Dimensional InP Nanopore Arrays for Improved Photoelectrochemical Hydrogen Production.

    Li, Qiang; Zheng, Maojun; Ma, Liguo; Zhong, Miao; Zhu, Changqing; Zhang, Bin; Wang, Faze; Song, Jingnan; Ma, Li; Shen, Wenzhong

    2016-08-31

    Ordered three-dimensional (3D) nanostructure arrays hold promise for high-performance energy harvesting and storage devices. Here, we report the fabrication of InP nanopore arrays (NPs) in unique 3D architectures with excellent light trapping characteristic and large surface areas for use as highly active photoelectrodes in photoelectrochemical (PEC) hydrogen evolution devices. The ordered 3D NPs were scalably synthesized by a facile two-step etching process of (1) anodic etching of InP in neutral 3 M NaCl electrolytes to realize nanoporous structures and (2) wet chemical etching in HCl/H3PO4 (volume ratio of 1:3) solutions for removing the remaining top irregular layer. Importantly, we demonstrated that the use of neutral electrolyte of NaCl instead of other solutions, such as HCl, in anodic etching of InP can significantly passivate the surface states of 3D NPs. As a result, the maximum photoconversion efficiency obtained with ∼15.7 μm thick 3D NPs was 0.95%, which was 7.3 and 1.4 times higher than that of planar and 2D NPs. Electrochemical impedance spectroscopy and photoluminescence analyses further clarified that the improved PEC performance was attributed to the enhanced charge transfer across 3D NPs/electrolyte interfaces, the improved charge separation at 3D NPs/electrolyte junction, and the increased PEC active surface areas with our unique 3D NP arrays.

  9. Photoreflection investigations of the dopant activation in InP doped with beryllium ions

    Avakyants, L.P.; Bokov, P.Yu.; Chervyakov, A.V.

    2005-01-01

    The processes of the dopant activation in the InP crystals implanted with Be + ions (energy 100 keV, dose 10 13 cm -2 and subsequent thermal annealing during 10 s) have been studied by means of photoreflection spectroscopy. Spectral lines of the crystal InP were absent in the photoreflection spectra of the samples annealed at temperatures less then 400 Deg C. This fact is connected with the disordering of the crystal structure due to the ion implantation. In the temperature range 400-700 Deg C the lines from InP band gap (1.34 eV) and conductance band-spin-orbit splitting valence subband (1.44 eV) have been observed due to the recovery of the crystal structure. In the photoreflectance spectra of a 800 Deg C annealed sample the Franz-Keldysh oscillations have been observed, which can be an evidence in favour of the dopant activation. Carrier concentration calculated from the period of Franz-Keldysh oscillations was equal to 2.2 x 10 16 cm -3 [ru

  10. Room-temperature annealing of Si implantation damage in InP

    Akano, U.G.; Mitchell, I.V.

    1991-01-01

    Spontaneous recovery at 295 K of Si implant damage in InP is reported. InP(Zn) and InP(S) wafers of (100) orientation have been implanted at room temperature with 600 keV Si + ions to doses ranging from 3.6x10 11 to 2x10 14 cm -2 . Room-temperature annealing of the resultant damage has been monitored by the Rutherford backscattering/channeling technique. For Si doses ≤4x10 13 cm -2 , up to 70% of the initial damage (displaced atoms) annealed out over a period of ∼85 days. The degree of recovery was found to depend on the initial level of damage. Recovery is characterized by at least two time constants t 1 2 ∼100 days. Anneal rates observed between 295 and 375 K are consistent with an activation energy of 1.2 eV, suggesting that the migration of implant-induced vacancies is associated with the reordering of the InP lattice

  11. Bandgap Engineering of InP QDs Through Shell Thickness and Composition

    Dennis, Allison M. [Los Alamos National Laboratory; Mangum, Benjamin D. [Los Alamos National Laboratory; Piryatinski, Andrei [Los Alamos National Laboratory; Park, Young-Shin [Los Alamos National Laboratory; Htoon, Han [Los Alamos National Laboratory; Hollingsworth, Jennifer A. [Los Alamos National Laboratory

    2012-06-21

    Fields as diverse as biological imaging and telecommunications utilize the unique photophysical and electronic properties of nanocrystal quantum dots (NQDs). The development of new NQD compositions promises material properties optimized for specific applications, while addressing material toxicity. Indium phosphide (InP) offers a 'green' alternative to the traditional cadmium-based NQDs, but suffers from extreme susceptibility to oxidation. Coating InP cores with more stable shell materials significantly improves nanocrystal resistance to oxidation and photostability. We have investigated several new InP-based core-shell compositions, correlating our results with theoretical predictions of their optical and electronic properties. Specifically, we can tailor the InP core-shell QDs to a type-I, quasi-type-II, or type-II bandgap structure with emission wavelengths ranging from 500-1300 nm depending on the shell material used (ZnS, ZnSe, CdS, or CdSe) and the thickness of the shell. Single molecule microscopy assessments of photobleaching and blinking are used to correlate NQD properties with shell thickness.

  12. Amorphization of Ge and InP studied using nuclear hyperfine methods

    Byrne, A.P.; Bezakova, E.; Glover, C.J.; Ridgway, M.C.

    1999-01-01

    The ion beam amorphization of InP and Ge has been studied using the Perturbed Angular Correlation (PAC) technique. Semiconductor samples were preimplanted with the radioisotope 111 In using a direct production-recoil implantation method and beams from the ANU Heavy-ion Facility. Following annealing samples were amorphized using Ge beams with doses between 2 x 10 12 ion/cm 2 and 5000 x 10 12 ion/cm 2 . For InP the PAC spectra identified three distinct regimes, crystalline, disordered and amorphous environments, with a smooth transition observed as a function of dose. The dose dependence of the relative fractions of the individual probe environments has been determined. A direct amorphization process consistent with the overlap model was quantified and evidence for a second amorphization process via the overlap of disordered regions was observed. The PAC method compares favorably with other methods used in its ability to differentiate changes at high dose. The results for InP will be compared with those in Ge. The implantation method will be discussed, as will developments in the establishment of a dedicated facility for the implantation of radioisotopes

  13. Optical reflectance studies of highly specular anisotropic nanoporous (111) InP membrane

    Steele, J A; Lewis, R A; Sirbu, L; Enachi, M; Tiginyanu, I M; Skuratov, V A

    2015-01-01

    High-precision optical angular reflectance measurements are reported for a specular anisotropic nanoporous (111) InP membrane prepared by doping-assisted wet-electrochemical etching. The membrane surface morphology was investigated using scanning electron microscope imaging and revealed a quasi-uniform and self-organized nanoporous network consisting of semiconductor ‘islands’ in the sub-wavelength regime. The optical response of the nanoporous InP surface was studied at 405 nm (740 THz; UV), 633 nm (474 THz; VIS) and 1064 nm (282 THz; NIR), and exhibited a retention of basic macro-dielectric properties. Refractive index determinations demonstrate an optical anisotropy for the membrane which is strongly dependent on the wavelength of incident light, and exhibits an interesting inversion (positive anisotropy to negative) between 405 and 633 nm. The inversion of optical anisotropy is attributed to a strongly reduced ‘metallic’ behaviour in the membrane when subject to above-bandgap illumination. For the simplest case of sub-bandgap incident irradiation, the optical properties of the nanoporous InP sample are analysed in terms of an effective refractive index n eff and compared to effective media approximations. (invited article)

  14. Selective-area vapour-liquid-solid growth of InP nanowires

    Dalacu, Dan; Kam, Alicia; Guy Austing, D; Wu Xiaohua; Lapointe, Jean; Aers, Geof C; Poole, Philip J

    2009-01-01

    A comparison is made between the conventional non-selective vapour-liquid-solid growth of InP nanowires and a novel selective-area growth process where the Au-seeded InP nanowires grow exclusively in the openings of a SiO 2 mask on an InP substrate. This new process allows the precise positioning and diameter control of the nanowires required for future advanced device fabrication. The growth temperature range is found to be extended for the selective-area growth technique due to removal of the competition between material incorporation at the Au/nanowire interface and the substrate. A model describing the growth mechanism is presented which successfully accounts for the nanoparticle size-dependent and time-dependent growth rate. The dominant indium collection process is found to be the scattering of the group III source material from the SiO 2 mask and subsequent capture by the nanowire, a process that had previously been ignored for selective-area growth by chemical beam epitaxy.

  15. Selective-area vapour-liquid-solid growth of InP nanowires

    Dalacu, Dan; Kam, Alicia; Guy Austing, D; Wu Xiaohua; Lapointe, Jean; Aers, Geof C; Poole, Philip J, E-mail: dan.dalacu@nrc-cnrc.gc.c [Institute for Microstructural Sciences, National Research Council of Canada, Ottawa, K1A 0R6 (Canada)

    2009-09-30

    A comparison is made between the conventional non-selective vapour-liquid-solid growth of InP nanowires and a novel selective-area growth process where the Au-seeded InP nanowires grow exclusively in the openings of a SiO{sub 2} mask on an InP substrate. This new process allows the precise positioning and diameter control of the nanowires required for future advanced device fabrication. The growth temperature range is found to be extended for the selective-area growth technique due to removal of the competition between material incorporation at the Au/nanowire interface and the substrate. A model describing the growth mechanism is presented which successfully accounts for the nanoparticle size-dependent and time-dependent growth rate. The dominant indium collection process is found to be the scattering of the group III source material from the SiO{sub 2} mask and subsequent capture by the nanowire, a process that had previously been ignored for selective-area growth by chemical beam epitaxy.

  16. Astragal und eiförmige motive auf Stuckdekor der Wandmalerei Sirmiums

    Rogić Dragana

    2011-01-01

    Full Text Available Im Laufe archäologischer Ausgrabungen 1977 kamen in Sremska Mitrovica, auf der Fundstelle Nr. 56, in einem Gebäude, dessen Grundriss und Typ nicht festgestellt werden konnten, neben anderen Funden auch mehrere Fragmente an Stuckdekoration zutage. In dieser Studie werden ihre Elemente parallel zu ähnlichen Motiven, die auf anderen in Sirmium gefundenen Wandmalereien auftreten, betrachtet. [Projekat Ministarstva nauke Republike Srbije, br. 47018: Viminacium, die römische Stadt und Militärlager - Forschung der materialen und geistigen Hinterlassenschaft mit der Verwendung moderner Technologien: Ferndetektion, Geophysik, GIS Digitalisation und 3D Visualisation

  17. Positive Effekte des Mindestlohns auf Arbeitsplatzqualität und Arbeitszufriedenheit

    Pusch, Toralf; Rehm, Miriam

    2017-01-01

    Über den Zusammenhang zwischen Mindestlöhnen und Änderungen bei der Arbeitsplatzqualität ist bisher wenig bekannt. Nach der Mindestlohneinführung in Deutschland stieg die Arbeitsplatzzufriedenheit insgesamt. Neben höheren Stunden- und Bruttolöhnen und verringerten Arbeitszeiten gibt es als möglichen Grund auch eine arbeitsorganisatorische Aufwertung der Arbeitsplätze. Bei bestehenden Beschäftigungsverhältnissen konnten Hinweise auf Verbesserungen beim Betriebsklima und einer mehr auf Mitarbei...

  18. A contribution to the investigation of the properties of the Au-Fe system

    Vano, M.; Sitek, J.; Cirak, J.

    1976-01-01

    Moessbauer spectroscopy, an electronic microanalyzer and X-ray diffractometry were used to study the properties of an Au-Fe solid solution during its preparation by installing Fe atoms into the Au matrix by diffusion heating at a temperature from 550 to 850 degC. On the basis of such measurements, the suitable heating temperature was determined at 850 degC; the Debye-Waller factor for Au-Fe is f=0.604+-0.040 and two configurations of Fe atoms in the Au crystal lattice were found. (author)

  19. Gasgenerator-Treibstoff auf der Basis von Ammoniumdinitramid (ADN) und Verfahren zu seiner Herstellung

    Krause, Horst; Schlechtriem, Stefan; Weiser, Volker; Schaller, Uwe; Hürttlen, Jürgen

    2016-01-01

    Es wird ein Gasgenerator-Treibstoff vorgeschlagen, welcher einen monergolen Treibstoff auf der Basis von Ammoniumdinitramid (ADN) und wenigstens ein Lösungsmittel enthält, wobei der Gasgenerator-Treibstoff wenigstens 65 Mass.-% ADN und höchstens 5 Mass.-% Wasser, jeweils bezogen auf die Mischung aus ADN und Lösungsmittel, enthält, und wobei wenigstens ein Lösungsmittel von Ammoniak (NH3) gebildet ist. Der Gasgenerator-Treibstoff ist vorzugsweise im Wesentlichen wasserfrei und enthält keine we...

  20. InP tunnel junction for InGaAs/InP tandem solar cells

    Vilela, M. F.; Freundlich, A.; Bensaoula, A.; Medelci, N.; Renaud, P.

    1995-01-01

    Chemical beam epitaxy (CBE) has been shown to allow the growth of high quality materials with reproducible complex compositional and doping profiles. The main advantage of CBE compared to metalorganic chemical vapor deposition (MOCVD), the most popular technique for InP-based photovoltaic device fabrication, is the ability to grow high purity epilayers at much lower temperatures (450-530 C). We have previously shown that CBE is perfectly suited toward the fabrication of complex photovoltaic devices such as InP/InGaAs monolithically integrated tandem solar cells, because its low process temperature preserves the electrical characteristics of the InGaAs tunnel junction commonly used as an ohmic interconnect. In this work using CBE for the fabrication of optically transparent (with respect to the bottom cell) InP tunnel diodes is demonstrated. Epitaxial growth were performed in a Riber CBE 32 system using PH3 and TMIn as III and V precursors. Solid Be (p-type) and Si (n-type) have been used as doping sources, allowing doping levels up to 2 x 10(exp -19)/cu cm and 1 x 10(exp -19)/cu cm for n and p type respectively. The InP tunnel junction characteristics and the influence of the growth's conditions (temperature, growth rate) over its performance have been carefully investigated. InP p(++)/n(++) tunnel junction with peak current densities up to 1600 A/sq cm and maximum specific resistivities (V(sub p)/I(sub p) - peak voltage to peak current ratio) in the range of 10(exp -4) Omega-sq cm were obtained. The obtained peak current densities exceed the highest results previously reported for their lattice matched counterparts, In(0.53)Ga( 0.47)As and should allow the realization of improved minimal absorption losses in the interconnect InP/InGaAs tandem devices for Space applications. Owing to the low process temperature required for the top cell, these devices exhibit almost no degradation of its characteristics after the growth of subsequent thick InP layer suggesting

  1. Defects in mitophagy promote redox-driven metabolic syndrome in the absence of TP53INP1.

    Seillier, Marion; Pouyet, Laurent; N'Guessan, Prudence; Nollet, Marie; Capo, Florence; Guillaumond, Fabienne; Peyta, Laure; Dumas, Jean-François; Varrault, Annie; Bertrand, Gyslaine; Bonnafous, Stéphanie; Tran, Albert; Meur, Gargi; Marchetti, Piero; Ravier, Magalie A; Dalle, Stéphane; Gual, Philippe; Muller, Dany; Rutter, Guy A; Servais, Stéphane; Iovanna, Juan L; Carrier, Alice

    2015-06-01

    The metabolic syndrome covers metabolic abnormalities including obesity and type 2 diabetes (T2D). T2D is characterized by insulin resistance resulting from both environmental and genetic factors. A genome-wide association study (GWAS) published in 2010 identified TP53INP1 as a new T2D susceptibility locus, but a pathological mechanism was not identified. In this work, we show that mice lacking TP53INP1 are prone to redox-driven obesity and insulin resistance. Furthermore, we demonstrate that the reactive oxygen species increase in TP53INP1-deficient cells results from accumulation of defective mitochondria associated with impaired PINK/PARKIN mitophagy. This chronic oxidative stress also favors accumulation of lipid droplets. Taken together, our data provide evidence that the GWAS-identified TP53INP1 gene prevents metabolic syndrome, through a mechanism involving prevention of oxidative stress by mitochondrial homeostasis regulation. In conclusion, this study highlights TP53INP1 as a molecular regulator of redox-driven metabolic syndrome and provides a new preclinical mouse model for metabolic syndrome clinical research. © 2015 The Authors. Published under the terms of the CC BY 4.0 license.

  2. [Heinz von zur Mühlen. Auf den Spuren einiger revlaer Firmen und Familien] / Paul Kaegbein

    Kaegbein, Paul

    2007-01-01

    Arvustus: Heinz von zur Mühlen. Auf den Spuren einiger revlaer Firmen und Familien. In : Buch und Bildung im Baltikum. Münster : LIT, 2005, lk. 527-541. Pika tänava majade omanikest alates 17. sajandist - perekonnad Koch, Meyer, Kluge, Ströhm, Wassermann, Glehn, Eggers, Koppelson, Weiss. Nii loob autor pildi Tallinna "firmade ajaloost"

  3. Verbesserung bei Patienten durch den Community Reinforcement Approach: Effekte auf Zufriedenheit und psychiatrische Symptome

    Roozen, H.G.; Greeven, P.G.J.; Dijkstra, B.A.G.; Bischof, G.

    2013-01-01

    Patienten mit Suchterkrankungen weisen ein eingeschränktes Wohlbefinden auf. Eine Querschnittsstudie mit einem Prä-Post-Behandlungsdesign wurde durchgeführt, um Behandlungs­effekte des Community Reinforcement Approach (CRA) hinsichtlich Zufriedenheit und psychia­trischer Symptome zu erfassen. Die

  4. Auswirkungen der Zugänglichkeit independenten und interdependenten Selbstwissens auf den Selbstwert

    Birkner, Norbert

    2003-01-01

    In drei Studien werden Befunde vorgelegt, die dafür sprechen, dass der Selbstwert von Personen mit independentem Selbstkonzept anders generiert wird als von Personen mit interdependentem Selbstkonzept, genauer sich aus unterschiedlichen Quellen speist. Innerhalb der drei Untersuchungsstichproben erfolgte die Klassifizierung der differenzierten Selbstkonstruktionen, die idealtypisch in individualistischen und kollektivistischen Kulturen entwickelt werden (Markus & Kitayama, 1991), auf Grundlag...

  5. Treibhausgasemissionen unter Bewässerung und unterschiedlicher Stickstoffdüngungsintensität auf einem Sandboden in Nord-Ost-Deutschland

    Trost, Benjamin

    2015-01-01

    Ziel der Arbeit ist die Gesamtbilanzierung der Treibhausgasemissionen eines Anbausystems unter Bewässerung auf einem Sandboden. Die dazu aufgestellte Treibhausgasbilanz basiert auf langjährigen Datenreihen zu Erträgen und Corg-Vorräten eines Dauerfeldversuchs sowie auf zweijährigen im Feldversuch durchgeführten N2O-Messungen. Die durchgeführten Untersuchungen zum Einfluss der Bewässerung auf die Corg-Vorräte zeigen, dass der Einsatz von mineralischem Stickstoffdünger und Bewässerung auf einem...

  6. Semiclassical Monte Carlo simulation studies of spin dephasing in InP and InSb nanowires

    Ashish Kumar

    2012-03-01

    Full Text Available We use semiclassical Monte Carlo approach to investigate spin polarized transport in InP and InSb nanowires. D’yakonov-Perel (DP relaxation and Elliott-Yafet (EY relaxation are the two main relaxation mechanisms for spin dephasing in III-V channels. The DP relaxation occurs because of bulk inversion asymmetry (Dresselhaus spin-orbit interaction and structural inversion asymmetry (Rashba spin-orbit interaction. The injection polarization direction studied is that along the length of the channel. The dephasing rate is found to be very strong for InSb as compared to InP which has larger spin dephasing lengths. The ensemble averaged spin components vary differently for both InP and InSb nanowires. The steady state spin distribution also shows a difference between the two III-V nanowires.

  7. Dielectric properties of semi-insulating Fe-doped InP in the terahertz spectral region.

    Alyabyeva, L N; Zhukova, E S; Belkin, M A; Gorshunov, B P

    2017-08-04

    We report the values and the spectral dependence of the real and imaginary parts of the dielectric permittivity of semi-insulating Fe-doped InP crystalline wafers in the 2-700 cm -1 (0.06-21 THz) spectral region at room temperature. The data shows a number of absorption bands that are assigned to one- and two-phonon and impurity-related absorption processes. Unlike the previous studies of undoped or low-doped InP material, our data unveil the dielectric properties of InP that are not screened by strong free-carrier absorption and will be useful for designing a wide variety of InP-based electronic and photonic devices operating in the terahertz spectral range.

  8. Molecular beam epitaxy of InxGa1-xAs on InP (100) substrates

    Dvoryankina, G.G.; Dvoryankin, V.F.; Petrov, A.G.; Kudryashov, A.A.; Khusid, L.B.

    1991-01-01

    Heteroepitaxy layers of In x Ga 1-x As in the wide field of compositions (x=0.2-0.8) of 0.2-2.0 μm thick on (100) InP substrates were grown using the methods of epitaxy from molecular beams. Structure, surface morphology and electric properties of layers in relation to their thick and composition were investigated. It was shown that the quality of In x Ga 1-x As layers on (100) InP was more sensitive to tensile strain than compressive strain. Different mechanisms of scattering of free electrons in layers of In x Ga 1-x As(x∼=0.53) on (101) InP were considered

  9. 19.2% Efficient InP Heterojunction Solar Cell with Electron-Selective TiO2 Contact.

    Yin, Xingtian; Battaglia, Corsin; Lin, Yongjing; Chen, Kevin; Hettick, Mark; Zheng, Maxwell; Chen, Cheng-Ying; Kiriya, Daisuke; Javey, Ali

    2014-12-17

    We demonstrate an InP heterojunction solar cell employing an ultrathin layer (∼10 nm) of amorphous TiO 2 deposited at 120 °C by atomic layer deposition as the transparent electron-selective contact. The TiO 2 film selectively extracts minority electrons from the conduction band of p-type InP while blocking the majority holes due to the large valence band offset, enabling a high maximum open-circuit voltage of 785 mV. A hydrogen plasma treatment of the InP surface drastically improves the long-wavelength response of the device, resulting in a high short-circuit current density of 30.5 mA/cm 2 and a high power conversion efficiency of 19.2%.

  10. Effect of Fe inter-diffusion on properties of InP layers grown with addition of RE elements

    Prochazkova, O.; Zavadil, J.; Zdansky, K.

    2005-01-01

    This contribution reports the redistribution behaviour of Fe during the growth of InP layers from liquid phase with addition of some rare earth elements on semi-insulating InP:Fe substrates. We have studied the influence of different rare earths on the Fe diffusion into InP layer and compared it with the phenomenon of an extraction of iron from Fe doped materials into adjacent layers doped by Zn, Cd and Be, reported recently. In the case of Tm addition a conversion of electrical conductivity of InP layer to semi-insulating as a consequence of Fe diffusion has been observed while no significant Fe inter-diffusion has been confirmed in the presence of other investigated rare earth additions. (copyright 2005 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  11. Peculiarities of defect formation in InP single crystals doped with donor (S, Ge) and acceptor (Zn) impurities

    Morozov, A.N.; Mikryukova, E.V.; Bublik, V.T.; Berkova, A.V.; Nashel'skij, A.Ya.; Yakobson, S.V.

    1988-01-01

    Effect of alloying with donor (S,Ge) and acceptor (Zn) impurities on the concentration of proper point defects in monocrystals InP grown up from equiatomic (relative to In and P) melts by the Czochralski method under flux layer is investigated. Changes in boundary positions of the InP homogeneity region caused by alloying are analysed on the basis of experimental results according to the precision measurement of the lattice parameter and crystal density, as well as measurements of the Hall concentration of charge carriers and their mobility. The concentrations of Frenkel nonequilibrium (V in -In i ) defects formed in the initial stage of indium solid solution decomposition in InP are estimated

  12. Control of morphology and crystal purity of InP nanowires by variation of phosphine flux during selective area MOMBE

    Kelrich, A.; Dubrovskii, V. G.; Calahorra, Y.; Cohen, S.; Ritter, D.

    2015-02-01

    We present experimental results showing how the growth rate, morphology and crystal structure of Au-catalyzed InP nanowires (NWs) fabricated by selective area metal organic molecular beam epitaxy can be tuned by the growth parameters: temperature and phosphine flux. The InP NWs with 20-65 nm diameters are grown at temperatures of 420 and 480 °C with the PH3 flow varying from 1 to 9 sccm. The NW tapering is suppressed at a higher temperature, while pure wurtzite crystal structure is preferred at higher phosphine flows. Therefore, by combining high temperature and high phosphine flux, we are able to fabricate non-tapered and stacking fault-free InP NWs with the quality that other methods rarely achieve. We also develop a model for NW growth and crystal structure which explains fairly well the observed experimental tendencies.

  13. Fabrication of InP-pentacene inorganic-organic hybrid heterojunction using MOCVD grown InP for photodetector application

    Sarkar, Kalyan Jyoti; Pal, B.; Banerji, P.

    2018-04-01

    We fabricated inorganic-organic hybrid heterojunction between indium phosphide (InP) and pentacene for photodetector application. InP layer was grown on n-Si substrate by atmospheric pressure metal organic chemical vapour deposition (MOCVD) technique. Morphological properties of InP and pentacene thin film were characterized by atomic force microscopy (AFM). Current-voltage characteristics were investigated in dark and under illumination condition at room temperature. During illumination, different wavelengths of visible and infrared light source were employed to perform the electrical measurement. Enhancement of photocurrent was observed with decreasing in wavelength of incident photo radiation. Ideality factor was found to be 1.92. High rectification ratio of 225 was found at ± 3 V in presence of infrared light source. This study provides new insights of inorganic-organic hybrid heterojunction for broadband photoresponse in visible to near infrared (IR) region under low reverse bias condition.

  14. Band Offsets and Interfacial Properties of HfAlO Gate Dielectric Grown on InP by Atomic Layer Deposition.

    Yang, Lifeng; Wang, Tao; Zou, Ying; Lu, Hong-Liang

    2017-12-01

    X-ray photoelectron spectroscopy and high-resolution transmission electron microscopy have been used to determine interfacial properties of HfO 2 and HfAlO gate dielectrics grown on InP by atomic layer deposition. An undesirable interfacial InP x O y layer is easily formed at the HfO 2 /InP interface, which can severely degrade the electrical performance. However, an abrupt interface can be achieved when the growth of the HfAlO dielectric on InP starts with an ultrathin Al 2 O 3 layer. The valence and conduction band offsets for HfAlO/InP heterojunctions have been determined to be 1.87 ± 0.1 and 2.83 ± 0.1 eV, respectively. These advantages make HfAlO a potential dielectric for InP MOSFETs.

  15. Optimized efficiency in InP nanowire solar cells with accurate 1D analysis

    Chen, Yang; Kivisaari, Pyry; Pistol, Mats-Erik; Anttu, Nicklas

    2018-01-01

    Semiconductor nanowire arrays are a promising candidate for next generation solar cells due to enhanced absorption and reduced material consumption. However, to optimize their performance, time consuming three-dimensional (3D) opto-electronics modeling is usually performed. Here, we develop an accurate one-dimensional (1D) modeling method for the analysis. The 1D modeling is about 400 times faster than 3D modeling and allows direct application of concepts from planar pn-junctions on the analysis of nanowire solar cells. We show that the superposition principle can break down in InP nanowires due to strong surface recombination in the depletion region, giving rise to an IV-behavior similar to that with low shunt resistance. Importantly, we find that the open-circuit voltage of nanowire solar cells is typically limited by contact leakage. Therefore, to increase the efficiency, we have investigated the effect of high-bandgap GaP carrier-selective contact segments at the top and bottom of the InP nanowire and we find that GaP contact segments improve the solar cell efficiency. Next, we discuss the merit of p-i-n and p-n junction concepts in nanowire solar cells. With GaP carrier selective top and bottom contact segments in the InP nanowire array, we find that a p-n junction design is superior to a p-i-n junction design. We predict a best efficiency of 25% for a surface recombination velocity of 4500 cm s-1, corresponding to a non-radiative lifetime of 1 ns in p-n junction cells. The developed 1D model can be used for general modeling of axial p-n and p-i-n junctions in semiconductor nanowires. This includes also LED applications and we expect faster progress in device modeling using our method.

  16. Understanding InP Nanowire Array Solar Cell Performance by Nanoprobe-Enabled Single Nanowire Measurements.

    Otnes, Gaute; Barrigón, Enrique; Sundvall, Christian; Svensson, K Erik; Heurlin, Magnus; Siefer, Gerald; Samuelson, Lars; Åberg, Ingvar; Borgström, Magnus T

    2018-05-09

    III-V solar cells in the nanowire geometry might hold significant synthesis-cost and device-design advantages as compared to thin films and have shown impressive performance improvements in recent years. To continue this development there is a need for characterization techniques giving quick and reliable feedback for growth development. Further, characterization techniques which can improve understanding of the link between nanowire growth conditions, subsequent processing, and solar cell performance are desired. Here, we present the use of a nanoprobe system inside a scanning electron microscope to efficiently contact single nanowires and characterize them in terms of key parameters for solar cell performance. Specifically, we study single as-grown InP nanowires and use electron beam induced current characterization to understand the charge carrier collection properties, and dark current-voltage characteristics to understand the diode recombination characteristics. By correlating the single nanowire measurements to performance of fully processed nanowire array solar cells, we identify how the performance limiting parameters are related to growth and/or processing conditions. We use this understanding to achieve a more than 7-fold improvement in efficiency of our InP nanowire solar cells, grown from a different seed particle pattern than previously reported from our group. The best cell shows a certified efficiency of 15.0%; the highest reported value for a bottom-up synthesized InP nanowire solar cell. We believe the presented approach have significant potential to speed-up the development of nanowire solar cells, as well as other nanowire-based electronic/optoelectronic devices.

  17. Unraveling aminophosphine redox mechanisms for glovebox-free InP quantum dot syntheses.

    Laufersky, Geoffry; Bradley, Siobhan; Frécaut, Elian; Lein, Matthias; Nann, Thomas

    2018-05-10

    The synthesis of colloidal indium phosphide quantum dots (InP QDs) has always been plagued by difficulties arising from limited P3- sources. Being effectively restricted to the highly pyrophoric tris(trimethylsilyl) phosphine (TMS3P) creates complications for the average chemist and presents a significant risk for industrially scaled reactions. The adaptation of tris(dialkylamino) phosphines for these syntheses has garnered attention, as these new phosphines are much safer and can generate nanoparticles with competitive photoluminescence properties to those from (TMS)3P routes. Until now, the reaction mechanics of this precursor were elusive due to many experimental optimizations, such as the inclusion of a high concentration of zinc salts, being atypical of previous InP syntheses. Herein, we utilize density functional theory calculations to outline a logical reaction mechanism. The aminophosphine precursor is found to require activation by a zinc halide before undergoing a disproportionation reaction to self-reduce this P(iii) material to a P(-iii) source. We use this understanding to adapt this precursor for a two-pot nanoparticle synthesis in a noncoordinating solvent outside of glovebox conditions. This allowed us to generate spherical InP/ZnS nanoparticles possessing fluorescence quantum yields >55% and lifetimes as fast as 48 ns, with tunable emission according to varying zinc halide acidity. The development of high quality and efficient InP QDs with this safer aminophosphine in simple Schlenk environments will enable a broader range of researchers to synthesize these nontoxic materials for a variety of high-value applications.

  18. Value and Anisotropy of the Electron and Hole Mass in Pure Wurtzite InP Nanowires.

    Tedeschi, D; De Luca, M; Granados Del Águila, A; Gao, Q; Ambrosio, G; Capizzi, M; Tan, H H; Christianen, P C M; Jagadish, C; Polimeni, A

    2016-10-12

    The effective mass of electrons and holes in semiconductors is pivotal in determining the dynamics of carriers and their confinement energy in nanostructured materials. Surprisingly, this quantity is still unknown in wurtzite (WZ) nanowires (NWs) made of III-V compounds (e.g., GaAs, InAs, GaP, InP), where the WZ phase has no bulk counterpart. Here, we investigate the magneto-optical properties of InP WZ NWs grown by selective-area epitaxy that provides perfectly ordered NWs featuring high-crystalline quality. The combined analysis of the energy of free exciton states and impurity levels under magnetic field (B up to 29 T) allows us to disentangle the dynamics of oppositely charged carriers from the Coulomb interaction and thus to determine the values of the electron and hole effective mass. By application of B⃗ along different crystallographic directions, we also assess the dependence of the transport properties with respect to the NW growth axis (namely, the WZ ĉ axis). The effective mass of electrons along ĉ is m e ∥ = (0.078 ± 0.002) m 0 (m 0 is the electron mass in vacuum) and perpendicular to ĉ is m e ⊥ = (0.093 ± 0.001) m 0 , resulting in a 20% mass anisotropy. Holes exhibit a much larger (∼320%) and opposite mass anisotropy with their effective mass along and perpendicular to ĉ equal to m h ∥ = (0.81 ± 0.18) m 0 and m h ⊥ = (0.250 ± 0.016) m 0 , respectively. While no full consensus is found with current theoretical results on WZ InP, our findings show trends remarkably similar to the experimental data available in WZ bulk materials, such as InN, GaN, and ZnO.

  19. Synthesis and properties of ultra-long InP nanowires on glass.

    Dhaka, Veer; Pale, Ville; Khayrudinov, Vladislav; Kakko, Joona-Pekko; Haggren, Tuomas; Jiang, Hua; Kauppinen, Esko; Lipsanen, Harri

    2016-12-16

    We report on the synthesis of Au-catalyzed InP nanowires (NWs) on low-cost glass substrates. Ultra-dense and ultra-long (up to ∼250 μm) InP NWs, with an exceptionally high growth rate of ∼25 μm min -1 , were grown directly on glass using metal organic vapor phase epitaxy (MOVPE). Structural properties of InP NWs grown on glass were similar to the ones grown typically on Si substrates showing many structural twin faults but the NWs on glass always exhibited a stronger photoluminescence (PL) intensity at room temperature. The PL measurements of NWs grown on glass reveal two additional prominent impurity related emission peaks at low temperature (10 K). In particular, the strongest unusual emission peak with an activation energy of 23.8 ± 2 meV was observed at 928 nm. Different possibilities including the role of native defects (phosphorus and/or indium vacancies) are discussed but most likely the origin of this PL peak is related to the impurity incorporation from the glass substrate. Furthermore, despite the presence of suspected impurities, the NWs on glass show outstanding light absorption in a wide spectral range (60%-95% for λ = 300-1600 nm). The optical properties and the NW growth mechanism on glass is discussed qualitatively. We attribute the exceptionally high growth rate mostly to the atmospheric pressure growth conditions of our MOVPE reactor and stronger PL intensity on glass due to the impurity doping. Overall, the III-V NWs grown on glass are similar to the ones grown on semiconductor substrates but offer additional advantages such as low-cost and light transparency.

  20. Hydrogen Passivation of N(+)P and P(+)N Heteroepitaxial InP Solar Cell Structures

    Chatterjee, B.; Davis, W. C.; Ringel, S. A.; Hoffman, R., Jr.

    1995-01-01

    Dislocations and related point defect complexes caused by lattice mismatch currently limit the performance of heteroepitaxial InP cells by introducing shunting paths across the active junction and by the formation of deep traps within the base region. We have previously demonstrated that plasma hydrogenation is an effective and stable means to passivate the electrical activity of such defects in specially designed heteroepitaxial InP test structures to probe hydrogen passivation at typical base depths within a cell structure. In this work, we present our results on the hydrogen passivation of actual heteroepitaxial n(+)p and p(+)n InP cell structures grown on GaAs substrates by metalorganic chemical vapor deposition (MOCVD). We have found that a 2 hour exposure to a 13.56 MHz hydrogen plasma at 275 C reduces the deep level concentration in the base regions of both n(+)p and p(+)n heteroepitaxial InP cell structures from as-grown values of 5 - 7 x 10(exp 14)/cc, down to 3 - 5 x 10(exp 12)/cc. All dopants were successfully reactivated by a 400 C, 5 minute anneal With no detectable activation of deep levels. I-V analysis indicated a subsequent approx. 100 fold decrease In reverse leakage current at -1 volt reverse bias, and an improved built in voltage for the p(+)n structures. ln addition to being passivated,dislocations are also shown to participate in secondary interactions during hydrogenation. We find that the presence of dislocations enhances hydrogen diffusion into the cell structure, and lowers the apparent dissociation energy of Zn-H complexes from 1.19 eV for homoepitaxial Zn-doped InP to 1.12 eV for heteroepitaxial Zn-doped InP. This is explained by additional hydrogen trapping at dislocations subsequent to the reactivation of Zn dopants after hydrogenation.

  1. Hydrogen passivation of N(+)-P and P(+)-N heteroepitaxial InP solar cell structures

    Chatterjee, Basab; Davis, William C.; Ringel, Steve A.; Hoffman, Richard, Jr.

    1996-01-01

    Dislocations and related point defect complexes caused by lattice mismatch currently limit the performance of heteroepitaxial InP cells by introducing shunting paths across the active junction and by the formation of deep traps within the base region. We have previously demonstrated that plasma hydrogenation is an effective and stable means to passivate the electrical activity of such defects in specially designed heteroepitaxial InP test structures to probe hydrogen passivation at typical base depths within a cell structure. In this work, we present our results on the hydrogen passivation of actual heteroepitaxial n-p and p-n InP cell structures grown on GaAs substrates by metalorganic chemical vapor deposition (MOCVD). We have found that a 2 hour exposure to a 13.56 MHz hydrogen plasma at 275 C reduces the deep level concentration in the base regions of both n(+)-p and p(+)-n heteroepitaxial InP cell structures from as-grown values of 5-7 x 10(exp 14) cm(exp -3), down to 3-5 x 10(exp 12) cm(exp -3). All dopants were successfully reactivated by a 400 C, 5 minute anneal with no detectable activation of deep levels. One to five analysis indicated a subsequent approximately 100 fold decrease in reverse leakage current at -1 volt reverse bias, and an improved built in voltage for the p(+)-n structures. In addition to being passivated, dislocations are also shown to participate in secondary interactions during hydrogenation. We find that the presence of dislocations enhances hydrogen diffusion into the cell structure, and lowers the apparent dissociation energy of Zn-H complexes from 1.19 eV for homoepitaxial Zn-doped InP to 1.12 eV for heteroepitaxial Zn-doped InP. This is explained by additional hydrogen trapping at dislocations subsequent to the reactivation of Zn dopants after hydrogenation.

  2. Development of scientific and technological basis for the fabrication of thin film solar cells on the basis of a-Si:H and {mu}c-Si:H using the 'hot-wire' deposition technique. Final report; Entwicklung wissenschaftlicher und technischer Grundlagen fuer die Herstellung von Duennschichtsolarzellen auf der Basis des a-Si:H und {mu}c-Si:H mit der 'Hot-Wire'-Depositionstechnik. Abschlussbericht

    Schroeder, B.

    2002-01-22

    - and p-type emitters have been fabricated. After a very short development time conversion efficiencies have been obtained ({eta}{sub max} = 15.2%) which are reported for PECVD emitters. (orig.) [German] Zwei neue Anlagen zur vollstaendigen bzw. grossflaechigen Abscheidung von a-Si:H basierenden Solarzellen mit der sog. 'Hot-Wire (HW)' CVD wurden aufgebaut. Die Abscheidebedingungen fuer geeignete n- und p-dotierte a-Si:H- bzw. {mu}c-Si:H-Schichten wurden ermittelt. Weltweit wurde erstmals eine a-Si:H-pin-Zelle vollstaendig mit der HWCVD-Methode hergestellt, ein Anfangswirkungsgrad von {eta}{sub initial} = 8,9% wurde erreicht. Nach Entwicklung eines p/n-Tunnel- bzw. Rekombinationsueberganges ist es weltweit ebenfalls erstmals gelungen, pin-pin-Tandemstrukturen mit a-Si:H-Absorbern vollstaendig mit der HWCVD-Methode abzuscheiden. Nach Teilalterung wurden noch Wirkungsgrade von {eta}{approx}7% ermittelt. Generell ist die Stabilitaet der all-HWCVD-Zellen noch unbedriedigend, was auf strukturell instabile p-Schichten zurueckgefuehrt werden konnte. Erste nip-Solarzellen auf Edelstahlsubstraten wurden ebenfalls vollstaendig mit der HWCVD praepariert ({eta}{sub initial}>6%). Der Einbau von {mu}c-Si:H-Absorberschichten die mit HWCVD bzw. ECWR-PECVD hergestellt wurden, in pin-Solarzellen war bisher wenig erfolgreich. In einer Anlage zur grossflaechigen HWCVD-Abscheidung wurden a-Si:H-Schichten mit guter Qualitaet und einer Schichtdickenuniformitaet von {delta}d = {+-}2,5% hergestellt. Fuer sog. 'Huepfzellen', nur die i-Schicht wurde in der Anlage abgeschieden, wurden auch sehr uniforme Anfangswirkungsgrade {eta}{sub initial}=6,1{+-}0,2% fuer kleinflaechige Zellen auf einer Flaeche von 20 x 20 cm{sup 2} erreicht. Diese Ergebnisse koennen als 'proof of concept' fuer die grossflaechige HWCVD-Abscheidung fuer a-Si:H-basierende Solarzellen betrachtet werden. Erstmals wurde die HWCVD zur Abscheidung von Emitter-Schichten fuer Hetero-Solarzellen auf c

  3. 75 GHz InP DHBT power amplifier based on two-stacked transistors

    Squartecchia, Michele; Midili, Virginio; Johansen, Tom Keinicke

    2017-01-01

    In this paper we present the design and measurements of a two-stage 75-GHz InP Double Heterojunction Bipolar Transistor (DHBT) power amplifier (PA). An optimized two-stacked transistor power cell has been designed, which represents the building block in the power stage as well as in the driver st......, the power amplifier exhibits a small signal gain of G = 12.6 dB, output power at 1-dB compression of Pout, 1dB = 18.6 dBm and a saturated output power of Psat > 21.4 dBm....

  4. Topography of InP surface bombarded by O2+ ion beam

    Sun Zhaoqi

    1997-01-01

    The topography of InP surface bombarded by O 2 + ion beam was investigated. Rippled topographies were observed for bombarded samples, and the data show that the ripple formation starts from a sputtering depth of about 0.4 μm. The wavelength and the disorder of the ripples both increase as the sputtering depth increases. The wavelength of the ripples appears to be sputtering depth dependent rather than sputtering rate dependent. It is confirmed that the ion-beam-induced surface rippling can be effectively suppressed by sample rotation during bombardment

  5. Defect reactions on the phosphorus sublattice in low-temperature electron-irradiated InP

    Sibille, A.; Suski, J.

    1985-01-01

    This Rapid Communication describes several thermally or electronically stimulated defect reactions involving the dominant deep centers in low-temperature (25--300 K) electron-irradiated InP. Some of these reactions result in an increased concentration of the centers, thereby revealing the existence of a secondary production mechanism of the related defects. Low-energy irradiations allows one to select the type of the ejected atom (P) and gives direct evidence that only a phosphorus species, interstitial or vacancy, is involved in the creation-reaction-annealing events

  6. Origin of the main deep electron trap in electron irradiated InP

    Sibille, A.

    1986-01-01

    The electrical activity and annealing behavior of the main electron trap in electron irradiated InP p + n junctions has been investigated. A very marked depth dependence of the annealing rate has been found. Moreover, this center apparently acts as if it were a deep donor, leading to an increase of carrier concentration on the n side. All these results are coherently interpreted with a model in terms of radiation defect D(P) (phosphorus interstitial or vacancy), residual shallow acceptor complexing, the final annealing resulting from a dissociation of the complex followed by a diffusion and either recapture or annihilation of D(P)

  7. Characterization of an anion antisite defect as a deep double donor in InP

    Ando, K.; Katsui, A.; Jeon, D.Y.; Watkins, G.D.; Gislason, H.P.

    1989-01-01

    A study of optically detected magnetic resonance (ODMR) on the anion antisite defect in electron irradiated InP has been made by monitoring the magnetic circular dichroism (MCD), combined with DLTS experiment. Comparison of the ODMR and DLTS results reveals that the intrinsic anion antisite defect acts as a deep double-donor in the gap. The first ionization (D o /D 1+ ) process occurs both in thermal and optical excitation as a mid-gap electron trap, detected by DLTS and DLOS experiment. (author) 12 refs., 6 figs

  8. Mechanical properties of pure and doped InP single crystals under concentrated loading

    Boyarskaya, Yu.S.; Grabko, D.Z.; Medinskaya, M.I.; Palistrant, N.A.

    1997-01-01

    The mechanical properties of pure and doped (Fe, Zn, Sn) InP single crystals were investigated in the temperature interval from 293 to 600 K. It was shown that impurity hardening (the microhardness increase) was more pronounced at elevated temperatures than at 293 K. This is conditioned by braking of the moving dislocations with impurities which is more observed in the the high temperature region. The obvious anisotropy of the scratch hardness was revealed at room temperature for the (001) face of crystals under investigation. This anisotropy decreased sharply in increasing the temperature from 293 to 600 K

  9. InP tunnel junctions for InP/InGaAs tandem solar cells

    Vilela, Mauro F.; Freundlich, Alex; Renaud, P.; Medelci, N.; Bensaoula, A.

    1996-01-01

    We report, for the first time, an epitaxially grown InP p(+)/n(++) tunnel junction. A diode with peak current densities up to 1600 A/cm and maximum specific resistivities (Vp/Ip - peak voltage to peak current ratio) in the range of 10(exp -4)Omega cm(exp 2) is obtained. This peak current density is comparable to the highest results previously reported for lattice matched In(0.53)Ga(0.47)As tunnel junctions. Both results were obtained using chemical beam epitaxy (CBE). In this paper we discuss the electrical characteristics of these tunnel diodes and how the growth conditions influence them.

  10. Polarization dependence of two-photon absorption coefficient and nonlinear susceptibility tensor in InP

    Matsusue, Toshio; Bando, Hiroyuki; Fujita, Shoichi; Takayama, Yusuke

    2011-01-01

    Two-photon absorption (TPA) effect in (001) InP is investigated using fs laser. Its dependences on wavelength and polarization are clarified by single and double beam methods with linearly polarized lights. Characteristic features are revealed and discussed with scaling law, crystal bonding and mutual relation of polarizations for double beams. The results are successfully analyzed on the basis of the third-order susceptibility tensor for comprehensive understanding of TPA effect at any polarization geometry. (copyright 2011 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  11. Monte Carlo investigation of minority electron transport in InP

    Osman, M.A.; Grubin, H.L.

    1989-01-01

    This paper discusses the investigation of the transport of minority electrons in p-type InP for acceptor doping level of 10 18 cm 3 using Monte Carlo procedures. It is found that the velocity of minority electrons are significantly lower than that of majority electrons for fields below 15 kV/cm and slightly higher at higher fields. The study shows that the interaction between the electrons and majority holes leads to reducing the mobility of electrons from 2000 cm 2 /Vs to 1500 cm 2 /Vs

  12. Growth of Self-Catalyzed InP Nanowires by Metalorganic Chemical Vapour Deposition

    Lv Xiao-Long; Zhang Xia; Yan Xin; Liu Xiao-Long; Cui Jian-Gong; Li Jun-Shuai; Huang Yong-Qing; Ren Xiao-Min

    2012-01-01

    The fabrication of self-catalyzed InP nanowires (NWs) is investigated under different growth conditions. Indium droplets induced by surface reconstruction act as nucleation sites for NW growth. Vertical standing NWs with uniform cross sections are obtained under optimized conditions. It is confirmed that the growth rate of NWs is strongly affected by the surface diffusion adatoms while contributions from the direct impingement of vapor species onto the In droplets can be negligible. The results indicate that the droplet acts as an adatom collector rather than a catalyst. Moreover, the diffusion flow rate of adatoms increases with time at the beginning of growth and stabilizes as the growth proceeds

  13. Millimeter‐wave INP DHBT power amplifier based on power‐optimized cascode configuration

    Johansen, Tom K.; Yan, Lei; Dupuy, Jean‐Yves

    2013-01-01

    This letter describes the use of a power‐optimized cascode configuration for obtaining maximum output power at millimeter‐wave (mm‐wave) frequencies for a two‐way combined power amplifier (PA). The PA has been fabricated in a high‐speed InP double heterojunction bipolar transistor technology and ...... configuration at mm‐wave frequencies are confirmed by both simulations and experimental results. © 2013 Wiley Periodicals, Inc. Microwave Opt Technol Lett 55:1178–1182, 2013; View this article online at wileyonlinelibrary.com. DOI 10.1002/mop.27477...

  14. Nuclear geophysics in space and atmospheric reserch at INPE/BRAZIl

    Nordemann, D.J.R.; Pereira, E.B.; Marinho, E.V.A.; Sircilli Neto, F.

    1986-05-01

    During the last years, INPE's research in Nuclear Geophysics has developed in fields of interest to the Institute, the scientific community and the society in general. In the space research field it may be considered as a contribution to the history of meteorite falls in our planet or possible collision with big meteorites which may have been the cause of important effects such as biological extinction and extraterrestrial matter gathering. In the atmospheric research field, spatial and temporal variations of radon measurements in the lower atmosphere allow correlations from micrometeorology to worlwide scale through mesoscale, in the interpretation of phenomena which deal with the dynamics of air masses. (Author) [pt

  15. Integrated cloud infrastructure of the LIT JINR, PE “NULITS” and INP's Astana branch

    Mazhitova Yelena

    2018-01-01

    Full Text Available The article describes the distributed cloud infrastructure deployed on the basis of the resources of the Laboratory of Information Technologies of the Joint Institute for Nuclear Research (LIT JINR and some JINR Member State organizations. It explains a motivation of that work, an approach it is based on, lists of its participants among which there are private entity “Nazarbayev University Library and IT services” (PE “NULITS” Autonomous Education Organization “Nazarbayev University” (AO NU and The Institute of Nuclear Physics’ (INP's Astana branch.

  16. All-Optical 9.35 Gb/s Wavelength Conversion in an InP Photonic Crystal Nanocavity

    Vukovic, Dragana; Yu, Yi; Heuck, Mikkel

    2013-01-01

    Wavelength conversion of a 9.35 Gb/s RZ signal is demonstrated using an InP photonic crystal H0 nanocavity. A clear eye is observed for the converted signal showing a pre-FEC bit error ratio down to 10-3.......Wavelength conversion of a 9.35 Gb/s RZ signal is demonstrated using an InP photonic crystal H0 nanocavity. A clear eye is observed for the converted signal showing a pre-FEC bit error ratio down to 10-3....

  17. Präbiotikasupplementation Schwangerer und ihre Wirkung auf die mütterliche und kindliche Darmflora sowie auf ausgewählte fetale Immunparameter - eine randomisierte, doppelblinde, placebo-kontrollierte Pilotstudie

    Shadid, Rania

    2007-01-01

    Diese Studie ist die erste, randomisierte, doppel-blinde, placebo-kontrollierte Langzeitpilotstudie, welche die Wirkung der Präbiotika-Supplementation während der Schwangerschaft auf die Zusammensetzung der mütterlichen und kindlichen Darmmikroflora untersucht. Die Präbiotika-Supplementation im letzten Trimenon der Schwangerschaft zeigte eine gute Verträglichkeit und einen bifidogenen Effekt auf die Darmflora Schwangerer. Im Gegensatz dazu, hatte die Präbiotika-Supplementation keinen signifik...

  18. [Auf Wache für die Nation : Erinnerungen der Weltkriegsagent Juozas Gabrys berichtet (1911-1918)] / Mart Kuldkepp

    Kuldkepp, Mart, 1983-

    2015-01-01

    Arvustus: Auf Wache für die Nation : Erinnerungen der Weltkriegsagent Juozas Gabrys berichtet (1911-1918). Hrsg. von Eberhard Demm und Christina Nikolajew. Verlag Peter Land. Frankfurt am Main u.a. 2013

  19. Insulated InP (100) semiconductor by nano nucleus generation in pure water

    Ghorab, Farzaneh; Es'haghi, Zarrin

    2018-01-01

    Preparation of specified designs on optoelectronic devices such as Light-Emitting Diodes (LEDs) and Laser Diodes (LDs) by using insulated thin films is very important. InP as one of those semiconductors which is used as optoelectronic devices, have two different kinds of charge carriers as n-InP and p-InP in the microelectronic industry. The surface preparation of this kind of semiconductor can be accomplished with individually chemical, mechanical, chemo - mechanical and electrochemical methods. But electrochemical method can be suitably replaced instead of the other methods, like CMP (Chemical Mechanical Polishing), because of the simplicity. In this way, electrochemically formation of insulated thin films by nano nucleus generation on semiconductor (using constant current density of 0.07 mA /cm2) studied in this research. Insulated nano nucleus generation and their growth up to thin film formation on semiconductor single crystal (100), n-InP, inpure water (0.08 µs/cm,25°c) characterized by Atomic Force Microscopy (AFM), Scanning Electron Microscopy (SEM), Four-point probe and Styloprofilometer techniques. The SEM images show active and passive regions on the n-InP surface and not uniform area on p-InP surface by passing through the passive condition. So the passive regions were nonuniform, and only the active regions were uniform and clean. The various semiconducting behavior in electrochemical condition, studied and compared with structural specification of InP type group (III-V).

  20. Multiple growths of epitaxial lift-off solar cells from a single InP substrate

    Lee, Kyusang; Shiu, Kuen-Ting; Zimmerman, Jeramy D.; Forrest, Stephen R.; Renshaw, Christopher K.

    2010-01-01

    We demonstrate multiple growths of flexible, thin-film indium tin oxide-InP Schottky-barrier solar cells on a single InP wafer via epitaxial lift-off (ELO). Layers that protect the InP parent wafer surface during the ELO process are subsequently removed by selective wet-chemical etching, with the active solar cell layers transferred to a thin, flexible plastic host substrate by cold welding at room temperature. The first- and second-growth solar cells exhibit no performance degradation under simulated Atmospheric Mass 1.5 Global (AM 1.5G) illumination, and have a power conversion efficiency of η p =14.4±0.4% and η p =14.8±0.2%, respectively. The current-voltage characteristics for the solar cells and atomic force microscope images of the substrate indicate that the parent wafer is undamaged, and is suitable for reuse after ELO and the protection-layer removal processes. X-ray photoelectron spectroscopy, reflection high-energy electron diffraction observation, and three-dimensional surface profiling show a surface that is comparable or improved to the original epiready wafer following ELO. Wafer reuse over multiple cycles suggests that high-efficiency; single-crystal thin-film solar cells may provide a practical path to low-cost solar-to-electrical energy conversion.

  1. Ab initio electronic band structure calculation of InP in the wurtzite phase

    Dacal, Luis C. O.; Cantarero, Andrés

    2011-05-01

    We present ab initio calculations of the InP band structure in the wurtzite phase and compare it with that of the zincblende phase. In both calculations, we use the full potential linearized augmented plane wave method as implemented in the WIEN2k code and the modified Becke-Johnson exchange potential, which provides an improved value of the bandgap. The structural optimization of the wurtizte InP gives a=0.4150 nm, c=0.6912 nm, and an internal parameter u=0.371, showing the existence of a spontaneous polarization along the growth axis. As compared to the ideal wurtzite structure (that with the lattice parameter derived from the zincblende structure calculations), the actual wurtzite structure is compressed (-1.3%) in plane and expanded (0.7%) along the c-direction. The value of the calculated band gaps agrees well with recent optical experiments. The calculations are also consistent with the optical transitions found using polarized light.

  2. Pressure-Dependent Photoluminescence Study of Wurtzite InP Nanowires.

    Chauvin, Nicolas; Mavel, Amaury; Patriarche, Gilles; Masenelli, Bruno; Gendry, Michel; Machon, Denis

    2016-05-11

    The elastic properties of InP nanowires are investigated by photoluminescence measurements under hydrostatic pressure at room temperature and experimentally deduced values of the linear pressure coefficients are obtained. The pressure-induced energy shift of the A and B transitions yields a linear pressure coefficient of αA = 88.2 ± 0.5 meV/GPa and αB = 89.3 ± 0.5 meV/GPa with a small sublinear term of βA = βB = -2.7 ± 0.2 meV/GPa(2). Effective hydrostatic deformation potentials of -6.12 ± 0.04 and -6.2 ± 0.04 eV are derived from the results for the A and B transitions, respectively. A decrease of the integrated intensity is observed above 0.5 GPa and is interpreted as a carrier transfer from the first to the second conduction band of the wurtzite InP.

  3. High-efficiency red electroluminescent device based on multishelled InP quantum dots.

    Jo, Jung-Ho; Kim, Jong-Hoon; Lee, Ki-Heon; Han, Chang-Yeol; Jang, Eun-Pyo; Do, Young Rag; Yang, Heesun

    2016-09-01

    We report on the synthesis of highly fluorescent red-emitting InP quantum dots (QDs) and their application to the fabrication of a high-efficiency QD-light-emitting diode (QLED). The core/shell heterostructure of the QDs is elaborately tailored toward a multishelled structure with a composition-gradient ZnSeS intermediate shell and an outer ZnS shell. Using the resulting InP/ZnSeS/ZnS QDs as an emitting layer, all-solution-processible red InP QLEDs are fabricated with a hybrid multilayered device structure having an organic hole transport layer (HTL) and an inorganic ZnO nanoparticle electron transport layer. Two HTLs of poly(9-vinlycarbazole) or poly[(9,9-dioctylfluorenyl-2,7-diyl)-co-(4,4'-(N-(4-sec-butylphenyl))diphenyl-amine), whose hole mobilities are different by at least three orders of magnitude, are individually applied for QLED fabrication and such HTL-dependent device performances are compared. Our best red device displays exceptional figures of merit such as a maximum luminance of 2849  cd/m2, a current efficiency of 4.2  cd/A, and an external quantum efficiency of 2.5%.

  4. Triple and Quadruple Junctions Thermophotovoltaic Devices Lattice Matched to InP

    Bhusal, L.; Freundlich, A.

    2007-01-01

    Thermophotovoltaic (TPV) conversion of IR radiation emanating from a radioisotope heat source is under consideration for deep space exploration. Ideally, for radiator temperatures of interest, the TPV cell must convert efficiently photons in the 0.4-0.7 eV spectral range. Best experimental data for single junction cells are obtained for lattice-mismatched 0.55 eV InGaAs based devices. It was suggested, that a tandem InGaAs based TPV cell made by monolithically combining two or more lattice mismatched InGaAs subcells on InP would result in a sizeable efficiency improvement. However, from a practical standpoint the implementation of more than two subcells with lattice mismatch systems will require extremely thick graded layers (defect filtering systems) to accommodate the lattice mismatch between the sub-cells and could detrimentally affect the recycling of the unused IR energy to the emitter. A buffer structure, consisting of various InPAs layers, is incorporated to accommodate the lattice mismatch between the high and low bandgap subcells. There are evidences that the presence of the buffer structure may generate defects, which could extend down to the underlying InGaAs layer. The unusual large band gap lowering observed in GaAs(1-x)N(x) with low nitrogen fraction [1] has sparked a new interest in the development of dilute nitrogen containing III-V semiconductors for long-wavelength optoelectronic devices (e.g. IR lasers, detector, solar cells) [2-7]. Lattice matched Ga1-yInyNxAs1-x on InP has recently been investigated for the potential use in the mid-infrared device applications [8], and it could be a strong candidate for the applications in TPV devices. This novel quaternary alloy allows the tuning of the band gap from 1.42 eV to below 1 eV on GaAs and band gap as low as 0.6eV when strained to InP, but it has its own limitations. To achieve such a low band gap using the quaternary Ga1-yInyNxAs1-x, either it needs to be strained on InP, which creates further

  5. Dopant-free twinning superlattice formation in InSb and InP nanowires

    Yuan, Xiaoming; Guo, Yanan; Caroff, Philippe; Tan, Hark Hoe; Jagadish, Chennupati; He, Jun

    2017-01-01

    Periodic arrangement of twin planes creates a controllable polytype that can affect both the electronic and optical properties of nanowires. The approach that is most used for inducing twinning superlattice (TSL) formation in III-V nanowires is introducing impurity dopants during growth. Here, we demonstrate that controlling the growth parameters is sufficient to produce regular twinning planes in Au-catalysed InSb and InP nanowires. Our results show that TSL formation in InSb nanowires only exists in a very narrow growth window. We suggest that growth conditions induce a high concentration of In (or Sb) in the Au droplet, which plays a similar role to that of surfactant impurities such as Zn, and increases the droplet wetting angle to yield a geometry that is favorable for TSL formation. The demonstration of TSL structure in InSb and InP nanowires by controlling the input of In (or Sb) further enhances fundamental understanding of TSL formation in III-V nanowires and allows us to tune the properties of these nanowires by crystal phase engineering. (copyright 2017 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

  6. Phosphine synthetic route features and postsynthetic treatment of InP quantum dots

    Mordvinova, Natalia; Vinokurov, Alexander; Dorofeev, Sergey; Kuznetsova, Tatiana; Znamenkov, Konstantin

    2014-01-01

    Highlights: • Quantum dots with average diameter of 3–5 nm were synthesized. • PH 3 was used as novel phosphorous precursor. • Electrophoresis was demonstrated to be an effective method of purification of QDs. • Photoeching leads to quantum yields about 20%. • The concentration and time dependencies for photoetching of QDs were obtained. -- Abstract: In this paper we report on the development of synthesis of InP quantum dots with a gaseous phosphine PH 3 as a source of phosphorus and myristic acid and TOP/TOPO as stabilizers. Samples synthesized using myristic acid as stabilizer at relatively low temperatures were found to contain admixture of In(OH) 3 . We studied the influence of HF concentration and duration of illumination on luminescence properties of InP quantum dots during photoetching process. Quantum yields of photoetched samples reached about 20%. Additionally, electrophoresis as a new technique of purification and size-depended separation of synthesized quantum dots was developed

  7. The design and manufacture of a notch structure for a planar InP Gunn diode

    Bai Yang; Jia Rui; Wu De-Qi; Jin Zhi; Liu Xin-Yu

    2013-01-01

    A planar InP-based Gunn diode with a notch doping structure is designed and fabricated for integration into millimeter-wave and terahertz integrated circuits. We design two kinds of InP-based Gunn diodes. One has a fixed diameter of cathode area, but has variable spacing between anode and cathode; the other has fixed spacing, but a varying diameter. The threshold voltage and saturated current exhibit their strong dependences on the spacing (10 μm–20 μm) and diameter (40 μm–60 μm) of the InP Gunn diode. The threshold voltage is approximately 4.5 V and the saturated current is in a range of 293 mA–397 mA. In this work, the diameter of the diode and the space between anode and cathode are optimized. The devices are fabricated using a wet etching technique and show excellent performances. The results strongly suggest that low-cost and reliable InP planar Gunn diodes can be used as single chip terahertz sources. (condensed matter: electronic structure, electrical, magnetic, and optical properties)

  8. An Efficient and Effective Design of InP Nanowires for Maximal Solar Energy Harvesting.

    Wu, Dan; Tang, Xiaohong; Wang, Kai; He, Zhubing; Li, Xianqiang

    2017-11-25

    Solar cells based on subwavelength-dimensions semiconductor nanowire (NW) arrays promise a comparable or better performance than their planar counterparts by taking the advantages of strong light coupling and light trapping. In this paper, we present an accurate and time-saving analytical design for optimal geometrical parameters of vertically aligned InP NWs for maximal solar energy absorption. Short-circuit current densities are calculated for each NW array with different geometrical dimensions under solar illumination. Optimal geometrical dimensions are quantitatively presented for single, double, and multiple diameters of the NW arrays arranged both squarely and hexagonal achieving the maximal short-circuit current density of 33.13 mA/cm 2 . At the same time, intensive finite-difference time-domain numerical simulations are performed to investigate the same NW arrays for the highest light absorption. Compared with time-consuming simulations and experimental results, the predicted maximal short-circuit current densities have tolerances of below 2.2% for all cases. These results unambiguously demonstrate that this analytical method provides a fast and accurate route to guide high performance InP NW-based solar cell design.

  9. Phosphorus-hydrogen complexes in LEC-grown InP

    Ulrici, W.; Kwasniewski, A.; Czupalla, M.; Neubert, M.

    2005-01-01

    In LEC-grown InP, about 30 sharp vibrational absorption lines are measured in the frequency region 2200 to 2350 cm -1 . All these lines are due to phosphorus-hydrogen stretching modes. Experiments on InP containing both hydrogen and deuterium finally proved that the line at 2202.4 cm -1 is due to a single hydrogen atom bonded to P in an indium vacancy (V In ) and that the line at 2315.6 cm -1 is due to the complex of four P-H bonds in an V In . In InP:H:D, this V In H 4 complex gives rise to six vibrational lines in the region of P-H modes and six lines in the region of P-D modes because of the five different types of V In H n D m complexes. The measured frequencies of these 12 lines are in excellent agreement with those obtained from ab initio calculations reported in the literature. Additional P-H complexes are discussed. (copyright 2005 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  10. Phosphorus-hydrogen complexes in LEC-grown InP

    Ulrici, W. [Paul-Drude-Institut fuer Festkoerperelektronik, Hausvogteiplatz 5-7, 10117 Berlin (Germany); Kwasniewski, A.; Czupalla, M.; Neubert, M. [Institut fuer Kristallzuechtung, Max-Born-Str. 2, 12489 Berlin (Germany)

    2005-03-01

    In LEC-grown InP, about 30 sharp vibrational absorption lines are measured in the frequency region 2200 to 2350 cm{sup -1}. All these lines are due to phosphorus-hydrogen stretching modes. Experiments on InP containing both hydrogen and deuterium finally proved that the line at 2202.4 cm{sup -1} is due to a single hydrogen atom bonded to P in an indium vacancy (V{sub In}) and that the line at 2315.6 cm{sup -1} is due to the complex of four P-H bonds in an V{sub In}. In InP:H:D, this V{sub In}H{sub 4} complex gives rise to six vibrational lines in the region of P-H modes and six lines in the region of P-D modes because of the five different types of V{sub In}H{sub n}D{sub m} complexes. The measured frequencies of these 12 lines are in excellent agreement with those obtained from ab initio calculations reported in the literature. Additional P-H complexes are discussed. (copyright 2005 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  11. The analytical center of INP - experience of becoming prospect of development

    Kadyrzhanov, K.K.; Kozhakhmetov, S.K.

    2004-01-01

    Full text: In 2001 in INP NNC RK the Analytical center has been organized as separate structural division. The primary goal of the Analytical center is all-round use of the scientific and technical potential, which has been saved up in INP NNC RK for the organization and carrying out of researches, actual for, first of all for the domestic companies, scientific institutes and the foreign companies working in Kazakhstan. In the report data on the equipment with which the Analytical center for performance of works is equipped are resulted. For these purposes the grants of the international organizations and funds are involved. For example, about two years it is maintained universal X-ray diffractometer Brucker D8 Advance got with support of U.S. CRDF (the project *KR2-993). Under the project *KAR2-1036-AL-03 the same fund in current of 2005 delivery of the specialized equipment for test of corrosion resistance of materials will be made. The site on preparation of materials in created and equipped with the specialized equipment. In the report results, both fundamental works, and data on the applied works executed with various partners - National Atomic Company 'KazAtomProm', Ulba Metallurgical Plant, 'Tengizchevroil' Oil Company, Pharmacological Company named 'B-clay' are discussed, etc. In the report the basic directions of the further development of works and expansions of geography of cooperation are formulated

  12. Dopant-free twinning superlattice formation in InSb and InP nanowires

    Yuan, Xiaoming [School of Physics and Electronics, Hunan Key Laboratory for Supermicrostructure and Ultrafast Process, Central South University, Changsha, Hunan (China); Department of Electronic Materials Engineering, Research School of Physics and Engineering, The Australian National University, Canberra, ACT (Australia); Guo, Yanan; Caroff, Philippe; Tan, Hark Hoe; Jagadish, Chennupati [Department of Electronic Materials Engineering, Research School of Physics and Engineering, The Australian National University, Canberra, ACT (Australia); He, Jun [School of Physics and Electronics, Hunan Key Laboratory for Supermicrostructure and Ultrafast Process, Central South University, Changsha, Hunan (China)

    2017-11-15

    Periodic arrangement of twin planes creates a controllable polytype that can affect both the electronic and optical properties of nanowires. The approach that is most used for inducing twinning superlattice (TSL) formation in III-V nanowires is introducing impurity dopants during growth. Here, we demonstrate that controlling the growth parameters is sufficient to produce regular twinning planes in Au-catalysed InSb and InP nanowires. Our results show that TSL formation in InSb nanowires only exists in a very narrow growth window. We suggest that growth conditions induce a high concentration of In (or Sb) in the Au droplet, which plays a similar role to that of surfactant impurities such as Zn, and increases the droplet wetting angle to yield a geometry that is favorable for TSL formation. The demonstration of TSL structure in InSb and InP nanowires by controlling the input of In (or Sb) further enhances fundamental understanding of TSL formation in III-V nanowires and allows us to tune the properties of these nanowires by crystal phase engineering. (copyright 2017 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

  13. Der Einfluss von sozialer Ungleichheit und kulturellen Unterschieden auf die Wahrnehmung von finanziellen und Arbeitsplatzrisiken: Überlegungen zur Risikogesellschaft

    Abbott, David; Quilgars, Deborah; Jones, Anwen

    2006-01-01

    Der vorliegende Artikel beruht auf Daten einer Studie, die sich mit der Frage beschäftigt, wie verschiedene soziale und kulturelle Gruppen die Risiken von Einkommens- und Arbeitsplatzverlust wahrnehmen und darauf reagieren. Autoren wie LASH, DOUGLAS und LUPTON betonten die Bedeutung von Gruppenzugehörigkeit und sozialen Kategorien für die Strukturierung der Reaktionsweisen auf verschiedene Risikoarten. Sie sprechen daher lieber von Risikokulturen als von der Risikogesellschaft. Trotzdem erken...

  14. Objektverfolgung durch Fusion von Radar- und Monokameradaten auf Merkmalsebene für zukünftige Fahrerassistenzsysteme

    Liu, Feng

    2010-01-01

    Die vorliegende Arbeit beschreibt eine neuartige Objektverfolgung durch Fusion von Radar- und Monokameradaten auf Merkmalsebene. Dabei werden zuerst die statistischen Fehlermodelle der Sensoren analysiert. Anschließend wird ein neues Assoziationsverfahren auf Basis der PDA-Methodik untersucht. Der Schwerpunkt dieser Arbeit ist die Behandlung der Objektdynmaik mit Hilfe eines adaptiven IMM-Filters. Schließlich wird die Thematik Objektklassifikation sowie Gassenbreiteschätzung beleuchtet.

  15. Einfluss von Thujonen und Omeprazol auf die Aktivität der glatten Muskelzelle im Ileum der Ratte

    Huhnstock, Stefan

    2010-01-01

    Untersucht wurde der Einfluss von Thujonen (α Thujon, αβThujon, natürliches Mischthujon) und Omeprazol auf die Ruheaktivität, den Basaltonus, die pharmakologisch vorstimulierte glatte Muskulatur ,sowie die elektrisch induzierte Kontraktionen und die elektrisch induzierte Relaxation unter nicht-adrenergen nicht-cholinergen Bedingungen an der glatten Muskelzelle im Ileum von Ratten. Auf die Ruheaktivität und den Basaltonus hatten die Substanzen keinen Einfluss. Thujone hatten einen signifikante...

  16. Wirkung mineralischer N-Düngung auf Blatterträge und Scopolamingehalte von Duboisia sp.

    Oster, Sabine

    2014-09-01

    Full Text Available Duboisia wird als Rohstofflieferant für Scopolamin verwendet. Dieses Tropanalkaloid wird aus dem Blattmaterial von Duboisia Arthybriden gewonnen und dient als Wirkstoff zur Therapie der Reisekrankheit sowie als Ausgangsstoff für partialsynthetische Anticholinergika. Für die effiziente Produktion sind hohe Erträge an Biomasse bei möglichst hohem Wirkstoffgehalt wünschenswert. Eine der abiotischen Einflussgrößen ist die Stickstoffernährung. Der hier beschriebene Freilandversuch stellt den Einfluss von vier unterschiedlich hohen N-Düngungsgaben (0 kg N/ha, 100 kg N/ha, 200 kg N/ha, 100+100 kg N/ha mit Kalkammonsalpeter (KAS auf drei Genotypen dar. Die N-Düngung zeigte keinen Einfluss auf den Scopolamingehalt, jedoch stieg mit erhöhter N-Menge die Biomasse signifikant an.

  17. Exchange bias effect in Au-Fe3O4 nanocomposites

    Chandra, Sayan; Frey Huls, N A; Phan, M H; Srinath, S; Srikanth, H; Garcia, M A; Lee, Youngmin; Wang, Chao; Sun, Shouheng; 2UB, Universitat de Barcelona, Avenida Diagonal 647, E-08028 Barcelona (Spain))" data-affiliation=" (Departament de Física Fonamental and Institut de Nanociència i Nanotecnologia IN2UB, Universitat de Barcelona, Avenida Diagonal 647, E-08028 Barcelona (Spain))" >Iglesias, Òscar

    2014-01-01

    We report exchange bias (EB) effect in the Au-Fe 3 O 4 composite nanoparticle system, where one or more Fe 3 O 4 nanoparticles are attached to an Au seed particle forming ‘dimer’ and ‘cluster’ morphologies, with the clusters showing much stronger EB in comparison with the dimers. The EB effect develops due to the presence of stress at the Au-Fe 3 O 4 interface which leads to the generation of highly disordered, anisotropic surface spins in the Fe 3 O 4 particle. The EB effect is lost with the removal of the interfacial stress. Our atomistic Monte Carlo studies are in excellent agreement with the experimental results. These results show a new path towards tuning EB in nanostructures, namely controllably creating interfacial stress, and opens up the possibility of tuning the anisotropic properties of biocompatible nanoparticles via a controllable exchange coupling mechanism. (paper)

  18. Spin glass transition in canonical AuFe alloys: A numerical study

    Zhang, Kai-Cheng; Li, Yong-Feng; Liu, Gui-Bin; Zhu, Yan

    2012-01-01

    Although spin glass transitions have long been observed in diluted magnetic alloys, e.g. AuFe and CuMn alloys, previous numerical studies are not completely consistent with the experiment results. The abnormal critical exponents of the alloys remain still puzzling. By employing parallel tempering algorithm with finite-size scaling analysis, we investigated the phase transitions in canonical AuFe alloys. Our results strongly support that spin glass transitions occur at finite temperatures in the alloys. The calculated critical exponents agree well with those obtained from experiments. -- Highlights: ► By simulation we investigated the abnormal critical exponents observed in canonical SG alloys. ► The critical exponents obtained from our simulations agree well with those measured from experiments. ► Our results strongly support that RKKY interactions lead to SG transitions at finite temperatures.

  19. Controllable growth and optical properties of InP and InP/InAs nanostructures on the sidewalls of GaAs nanowires

    Yan, Xin; Zhang, Xia; Li, Junshuai; Cui, Jiangong; Ren, Xiaomin

    2014-01-01

    The growth and optical properties of InP and InP/InAs nanostructures on GaAs nanowires are investigated. InP quantum well and quantum dots (QDs) are formed on the sidewalls of GaAs nanowires successively with increasing the deposition time of InP. The GaAs/InP nanowire heterostructure exhibits a type-II band alignment. The wavelength of the InP quantum well is in the range of 857–892 nm at 77 K, which means that the quantum well is nearly fully strained. The InP quantum dot, which has a bow-shaped cross section, exhibits dislocation-free pure zinc blende structure. Stranski-Krastanow InAs quantum dots are subsequently formed on the GaAs/InP nanowire core-shell structure. The InAs quantum dots are distributed over the middle part of the nanowire, indicating that the In atoms contributing to the quantum dots mainly come from the vapor rather than the substrate. The longest emission wavelength obtained from the InAs QDs is 1039 nm at 77 K. The linewidth is as narrow as 46.3 meV, which is much narrower than those on planar InP substrates and wurtzite InP nanowires, suggesting high-crystal-quality, phase-purity, and size-uniformity of quantum dots

  20. Electron capture cross-section of Au-Fe complex in silicon

    Ali, Akbar; Shafi, M; Majid, Abdul

    2006-01-01

    A deep level transient spectroscopy technique is applied to study the capture cross-section of an iron-gold complex. The thermal ionization energy obtained from emission rate data is found to be E c -0.36 eV. The Au-Fe complex is a single defect having a capture cross-section of 2.48x10 -16 cm 2 for electrons which is independent of temperature

  1. Physikalische Grundlagen von chemischen Raman-Sensoren mit Schwerpunkt auf faseroptischen SERS-Sonden

    Viets, Carmen

    2001-01-01

    Faseroptische SERS-Sensoren wurden durch die Beschichtung der Endflächen von optischen Fasern mit rauhen Metallfilmen erzeugt. Zu den verschiedenen Präparationstechniken, die angewendet und verglichen wurden, gehörten das langsame Aufdampfen von Metall-Inselfilmen und das Bedampfen von Nanopartikeln, aufgerauhten oder elektronenlithographisch strukturierten Oberflächen mit Metallfilmen. Der Einfluß der Laserleistung auf die Messungen mit SERS-Sensoren wurde untersucht, und es wurden maximale ...

  2. DIE RECHTSPOSITION DER EHRLICHEN UND UNEHRLICHEN BESITZER IN BEZUG AUF EIGENTÜMER

    Jadranko Jug

    2017-01-01

    Full Text Available Diese Arbeit beschäftigt sich mit den Problemen, die mit der rechtlichen Stellung ehrlicher und unehrlicher Besitzer im Verhältnis zum Eigentümer verbunden sind, d.h. sie analysiert die Rechte des Besitzers und die Forderungen, welche der Besitzer vom Eigentümer verlangen kann, damit der Besitzer sein Besitz abgibt. Im Gegensatz dazu werden die Rechte und Anforderungen des Eigentümers in Bezug auf ehrliche und unehrliche Besitzer analysiert. In der Praxis entstehen Dilemmas, wie die wesentlichen und vorteilhaften Ausgaben des ehrlichen Besitzers bestimmt werden, welche Voraussetzungen es sind und bis zu welchen Zeitpunkt das Zurückbehaltungsrecht für die Vergütung dieser Ausgaben ausgeübt werden kann, wann die Verjährungsfrist anfängt und von welcher Bedeutung die Bestimmungen des Zivilverfahrensgesetzes in Bezug auf die ungerechte Anreicherung, die Geschäftsführung ohne Anordnung oder das Zurückbehaltungsrecht sind und welche Bestimmungen diese und ähnliche Fragen regeln. Die Antworten auf einige von diesen Dilemmas sind in der Rechtsprechung vorgelegt, weshalb die Analyse und Forschung der Rechtsprechung, insbesondere Entscheidungen des Obersten Gerichtshofs der Republik Kroatien, die grundlegende Methode dieser Arbeit ist. In der Einführung bietet diese Artikel die grundlegenden Merkmale des Begriffs des Besitzens und des Eigentumsbesitzes und die Art und Qualität des Besitzes an, um eine Grundlage für die anschließende Analyse der Rechtsposition des Eigentumsbesitzers in Bezug auf den Eigentümer zu schaffen.

  3. Effects of Au/Fe and Fe nanoparticles on Serratia bacterial growth and production of biosurfactant

    Liu, Jia; Vipulanandan, Cumaraswamy

    2013-01-01

    The overall objective of this study was to compare the effects of Au/Fe and Fe nanoparticles on the growth and performance of Serratia Jl0300. The nanoparticle effect was quantified not only by the bacterial growth on agar plate after 1 hour interaction with the nanoparticles, but also by its production of a biosurfactant from used vegetable oil. The nanoparticles were prepared using the foam method. The concentrations of the nanoparticles used for the bacterial interaction study were varied from 1 mg/L to 1 g/L. The test results showed that the effect of nanoparticles on the bacterial growth and biosurfactant production varied with nanoparticle type, concentrations, and interaction time with the bacteria. Au/Fe nanoparticles didn't show toxicity to Serratia after short time (1 h) exposure, while during 8 days fermentation Au/Fe nanoparticles inhibited the growth of Serratia as well as the biosurfactant production when the concentration of the nanoparticles was higher than 10 mg/L. Fe nanoparticles showed inhibition effects to bacterial growth both after short time and long time interaction with Serratia, as well as to biosurfactant production when its concentration was higher than 100 mg/L. Based on the trends observed in this study, analytical models have been developed to predict the bacterial growth and biosurfactant production with varying concentrations of nanoparticles. - Highlights: • Modeled the effect of nanoparticles on the bacterial growth and biosurfactant production. • Effects of Au/Fe nonoparticles on Serratia Bacterial Growth and Production of Biosurfactant. • Scanning Electron Micrograph of bacteria-nanoparticles interaction

  4. Hoffen auf den guten Willen – von der unverbindlichen Institutionalisierung feministischer Forderungen

    Maike Bußmann

    2008-11-01

    Full Text Available Nachdem die Protagonistinnen der ersten Frauenbewegung prinzipiell den Zugang in die Institutionen erstritten hatten, wurde seit den 1968ern der Marsch durch die Institutionen angetreten. Diesen untersucht Stefanie Ehmsen für die Vereinigten Staaten und die Bundesrepublik, wobei sie die Unterschiede als Resultat der jeweiligen politischen Traditionen interpretiert. Zwar wartet sie mit gut recherchierten und lesenswerten Fallbeispielen auf, doch das Potential der Analyse wird leider nicht ausgeschöpft.

  5. Der Einfluss von Mixed Emotions auf die Werbewirkung : eine experimentelle Studie

    Bauer, Hans H.; Donnevert, Tobias; Exler, Stefanie; Hobusch, Sonja

    2007-01-01

    Emotionale Appelle haben heutzutage einen festen Platz in der Werbung. Neben rein positiven sowie rein negativen Emotionen werden auch Mixed Emotions verstärkt eingesetzt. Die Erforschung der konsumentenverhaltensrelevanten Wirkungen von Mixed Emotions, die das gleichzeitige oder sequentielle Erleben gegensätzlicher Emotionen bezeichnen, steckt jedoch noch in den Kinderschuhen. In der vorliegenden Studie wird daher der Einfluss von Mixed Emotions auf zentrale psychographische Werbewirku...

  6. Generative Fertigung im Maschinenbau - industrieller 3D-Druck auf dem Weg in die Serienproduktion

    Müller, Bernhard

    2014-01-01

    3D-Druck ist aktuell medial omnipräsent, sein Potential für echte industrielle Anwendungen, v. a. im Maschinenbauumfeld, wird kontrovers diskutiert. Der Vortrag gibt einen fundierten Einblick in den Stand der Technik zum industriellen 3D-Druck (Generative Fertigung , Additive Manufacturing) und zeigt spezifische Potentiale mit industrieller Relevanz auf. Dabei werden ebenso Praxisbeispiele aus heutiger Anwendung in der Industrie gezeigt als auch Zukunftsszenarien für potentielle Anwendungen e...

  7. Electron capture cross-section of Au-Fe complex in silicon

    Ali, Akbar; Shafi, M; Majid, Abdul [Advance Materials Physics Laboratory, Department of Physics, Quaid-i-Azam University, Islamabad (Pakistan)

    2006-10-15

    A deep level transient spectroscopy technique is applied to study the capture cross-section of an iron-gold complex. The thermal ionization energy obtained from emission rate data is found to be E{sub c} -0.36 eV. The Au-Fe complex is a single defect having a capture cross-section of 2.48x10{sup -16} cm{sup 2} for electrons which is independent of temperature.

  8. Kamera-basierte Erkennung von Geschwindigkeitsbeschränkungen auf deutschen Straen

    Nienhüser, Dennis; Ziegenmeyer, Marco; Gumpp, Thomas; Scholl, Kay-Ulrich; Zöllner, J. Marius; Dillmann, Rüdiger

    An Fahrerassistenzsysteme im industriellen Einsatz werden hohe Anforderungen bezüglich Zuverlässigkeit und Robustheit gestellt. In dieser Arbeit wird die Kombination robuster Verfahren wie der Hough-Transformation und Support-Vektor-Maschinen zu einem Gesamtsystem zur Erkennung von Geschwindigkeitsbeschränkungen beschrieben. Es setzt eine Farbvideokamera als Sensorik ein. Die Evaluation auf Testdaten bestätigt durch die ermittelte hohe Korrektklassifikationsrate bei gleichzeitig geringer Zahl Fehlalarme die Zuverlässigkeit des Systems.

  9. Einfluss von Hypothyreose und Mukoviszidose auf das Ruhe- und Belastungs-EKG

    Gerlach, Julia

    2009-01-01

    Bei Menschen, die an cystischer Fibrose oder auch an einer Hypothyreose erkrankt sind, ist die Beteiligung des Herz-Kreislauf-Systems eine bekannte Komplikation. Ziel dieser Arbeit war, möglicherweise bislang unbekannte Auswirkungen dieser Erkrankungen auf das Belastungs-EKG von Kindern und Jugendlichen zu identifizieren und ggf. zu deuten. Dadurch sollte die Beurteilbarkeit des Belastungs-EKGs bei der Untersuchung der genannten Patientengruppen verbessert werden. Es wurden insgesamt 64 Patie...

  10. Die Auswirkungen von Corporate Social Responsibility und Organisationsstolz auf Mitarbeiter im Kundenkontakt

    Rhein, Miriam Katharina

    2012-01-01

    Corporate Social Responsibility (CSR) leistet nicht nur einen Beitrag zum Wohle verschiedener Stakeholdergruppen, sondern kann sich über die Wahrnehmungen der Mitarbeiter positiv auf den Unternehmenserfolg auswirken. Es kann angenommen werden, dass eine von den Mitarbeitern als glaubwürdig wahrgenommene CSR das Potenzial besitzt, kurzfristige, äußerst intensive positive emotionale sowie längerfristig anhaltende einstellungsbezogene Reaktionen hervorzurufen und dadurch relevante Verhaltensweis...

  11. Effects of Au/Fe and Fe nanoparticles on Serratia bacterial growth and production of biosurfactant

    Liu, Jia; Vipulanandan, Cumaraswamy, E-mail: cvipulanandan@uh.edu

    2013-10-15

    The overall objective of this study was to compare the effects of Au/Fe and Fe nanoparticles on the growth and performance of Serratia Jl0300. The nanoparticle effect was quantified not only by the bacterial growth on agar plate after 1 hour interaction with the nanoparticles, but also by its production of a biosurfactant from used vegetable oil. The nanoparticles were prepared using the foam method. The concentrations of the nanoparticles used for the bacterial interaction study were varied from 1 mg/L to 1 g/L. The test results showed that the effect of nanoparticles on the bacterial growth and biosurfactant production varied with nanoparticle type, concentrations, and interaction time with the bacteria. Au/Fe nanoparticles didn't show toxicity to Serratia after short time (1 h) exposure, while during 8 days fermentation Au/Fe nanoparticles inhibited the growth of Serratia as well as the biosurfactant production when the concentration of the nanoparticles was higher than 10 mg/L. Fe nanoparticles showed inhibition effects to bacterial growth both after short time and long time interaction with Serratia, as well as to biosurfactant production when its concentration was higher than 100 mg/L. Based on the trends observed in this study, analytical models have been developed to predict the bacterial growth and biosurfactant production with varying concentrations of nanoparticles. - Highlights: • Modeled the effect of nanoparticles on the bacterial growth and biosurfactant production. • Effects of Au/Fe nonoparticles on Serratia Bacterial Growth and Production of Biosurfactant. • Scanning Electron Micrograph of bacteria-nanoparticles interaction.

  12. Effective surface passivation of InP nanowires by atomic-layer-deposited Al2O3 with POx interlayer

    Black, L.E.; Cavalli, A.; Verheijen, M.A.; Haverkort, J.E.M.; Bakkers, E.P.A.M.; Kessels, W.M.M.

    2017-01-01

    III/V semiconductor nanostructures have significant potential in device applications, but effective surface passivation is critical due to their large surface-to-volume ratio. For InP such passivation has proven particularly difficult, with substantial depassivation generally observed following

  13. Enhancement of radiation tolerance in GaAs/AlGaAs core–shell and InP nanowires

    Li, Fajun; Xie, Xiaolong; Gao, Qian; Tan, Liying; Zhou, Yanping; Yang, Qingbo; Ma, Jing; Fu, Lan; Tan, Hark Hoe; Jagadish, Chennupati

    2018-06-01

    Radiation effects on semiconductor nanowires (NWs) have attracted the attention of the research community due to their potential applications in space and atomic fields. The effective implementation of NW devices in a radiation environment is a matter of concern. Here, the photoluminescence (PL) and time-resolved PL (TRPL) measurements were performed on both GaAs and InP NWs at room temperature before and after 1 MeV H+ irradiation with fluences ranging from 1 × 1011 to 5 × 1013 p cm‑2. It is found that the degradation of lifetime is size-dependent, and typically the minority carrier lifetime damage coefficient is closely correlated with the material and NW diameter. Compared to GaAs and InP bulk material counterparts, the lifetime damage coefficient of NWs decreases by a factor of about one order of magnitude. After irradiation, GaAs NWs with a smaller diameter show a much lower lifetime damage coefficient while InP NWs show an increase in carrier radiative lifetime. The increased size-dependent radiation hardness is mainly attributed to the defect sink effect and/or the improvement of a room temperature dynamic annealing mechanism of the NWs. The InP NWs also showed higher radiation tolerance than GaAs NWs.

  14. XRD Investigation of the relaxation of InAsP layers grown by CBE on (100) InP

    Marschner, T.H.; Leijs, M.R.; Vonk, H.; Wolter, J.H.

    1998-01-01

    We present X-ray diffraction (XRD) investigations of the influence of the substrate off-orientation on the relaxation of InAsP layers grown on InP by chemical beam epitaxy (CBE). Our measurements show that with beginning relaxation the As-concentration increases drastically and stays constant if the

  15. On-chip patch antenna on InP substrate for short-range wireless communication at 140 GHz

    Dong, Yunfeng; Johansen, Tom Keinicke; Zhurbenko, Vitaliy

    2017-01-01

    This paper presents the design of an on-chip patch antenna on indium phosphide (InP) substrate for short-range wireless communication at 140 GHz. The antenna shows a simulated gain of 5.3 dBi with 23% bandwidth at 140 GHz and it can be used for either direct chip-to-chip communication or chip...

  16. Ultrafast carrier dynamics in Br.sup.+./sup.-bombarded InP studied by time-resolved terahertz spectroscopy

    Němec, Hynek; Fekete, Ladislav; Kadlec, Filip; Kužel, Petr

    2008-01-01

    Roč. 78, č. 23 (2008), 235206/1-235206/7 ISSN 1098-0121 R&D Projects: GA MŠk LC512 Institutional research plan: CEZ:AV0Z10100520 Keywords : InP * carrier lifetime * carrier mobility * ultrafast * ion-bombardment * terahertz Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 3.322, year: 2008

  17. High detection performance of particle detectors based on SI InP doped with Ti and Zn

    Gorodynskyy, Vladyslav; Yatskiv, Roman; Žďánský, Karel; Pekárek, Ladislav

    2008-01-01

    Roč. 55, č. 5 (2008), s. 2785-2788 ISSN 0018-9499 R&D Projects: GA AV ČR KAN400670651 Institutional research plan: CEZ:AV0Z10100520; CEZ:AV0Z20670512 Keywords : radiation detection * InP * crystal growth Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 1.518, year: 2008

  18. 3D thermal simulations and modeling of multi-finger InP DHBTs for millimeter-wave power amplifiers

    Midili, Virginio; Nodjiadjim, V.; Johansen, Tom Keinicke

    2017-01-01

    This paper presents the comparison between the simulated and measured thermal resistance of InP Double Heterojunction Bipolar Transistors (DHBT). 3D thermal simulations were carried out in order to compute the temperature distribution across the full structure due to a constant power excitation...

  19. Enhancement of radiation tolerance in GaAs/AlGaAs core-shell and InP nanowires.

    Li, Fajun; Xie, Xiaolong; Gao, Qian; Tan, Liying; Zhou, Yanping; Yang, Qingbo; Ma, Jing; Fu, Lan; Tan, Hark Hoe; Jagadish, Chennupati

    2018-06-01

    Radiation effects on semiconductor nanowires (NWs) have attracted the attention of the research community due to their potential applications in space and atomic fields. The effective implementation of NW devices in a radiation environment is a matter of concern. Here, the photoluminescence (PL) and time-resolved PL (TRPL) measurements were performed on both GaAs and InP NWs at room temperature before and after 1 MeV H + irradiation with fluences ranging from 1 × 10 11 to 5 × 10 13 p cm -2 . It is found that the degradation of lifetime is size-dependent, and typically the minority carrier lifetime damage coefficient is closely correlated with the material and NW diameter. Compared to GaAs and InP bulk material counterparts, the lifetime damage coefficient of NWs decreases by a factor of about one order of magnitude. After irradiation, GaAs NWs with a smaller diameter show a much lower lifetime damage coefficient while InP NWs show an increase in carrier radiative lifetime. The increased size-dependent radiation hardness is mainly attributed to the defect sink effect and/or the improvement of a room temperature dynamic annealing mechanism of the NWs. The InP NWs also showed higher radiation tolerance than GaAs NWs.

  20. Facile synthesis of uniform large-sized InP nanocrystal quantum dots using tris(tert-butyldimethylsilyl)phosphine

    2012-01-01

    Colloidal III-V semiconductor nanocrystal quantum dots [NQDs] have attracted interest because they have reduced toxicity compared with II-VI compounds. However, the study and application of III-V semiconductor nanocrystals are limited by difficulties in their synthesis. In particular, it is difficult to control nucleation because the molecular bonds in III-V semiconductors are highly covalent. A synthetic approach of InP NQDs was presented using newly synthesized organometallic phosphorus [P] precursors with different functional moieties while preserving the P-Si bond. Introducing bulky side chains in our study improved the stability while facilitating InP formation with strong confinement at a readily low temperature regime (210°C to 300°C). Further shell coating with ZnS resulted in highly luminescent core-shell materials. The design and synthesis of P precursors for high-quality InP NQDs were conducted for the first time, and we were able to control the nucleation by varying the reactivity of P precursors, therefore achieving uniform large-sized InP NQDs. This opens the way for the large-scale production of high-quality Cd-free nanocrystal quantum dots. PMID:22289352

  1. Radiation resistance and comparative performance of ITO/InP and n/p InP homojunction solar cells

    Weinberg, I.; Swartz, C.K.; Hart, R.E. Jr.; Coutts, T.J.

    1988-09-01

    The radiation resistance of ITO/InP cells processed by DC magnetron sputtering is compared to that of standard n/p InP and GaAs homojunction cells. After 20 MeV proton irradiations, it is found that the radiation resistance of the present ITO/InP cell is comparable to that of the n/p homojunction InP cell and that both InP cell types have radiation resistance significantly greater than GaAs. The relatively lower radiation resistance, observed at higher fluence, for the InP cell with the deepest junction depth, is attributed to losses in the cells emitter region. Diode parameters obtained from I sub sc - V sub oc plots, data from surface Raman spectroscopy, and determinations of surface conductivity types are used to investigate the configuration of the ITO/InP cells. It is concluded that thesee latter cells are n/p homojunctions, the n-region consisting of a disordered layer at the oxide semiconductor

  2. Crystallinity, Surface Morphology, and Photoelectrochemical Effects in Conical InP and InN Nanowires Grown on Silicon.

    Parameshwaran, Vijay; Xu, Xiaoqing; Clemens, Bruce

    2016-08-24

    The growth conditions of two types of indium-based III-V nanowires, InP and InN, are tailored such that instead of yielding conventional wire-type morphologies, single-crystal conical structures are formed with an enlarged diameter either near the base or near the tip. By using indium droplets as a growth catalyst, combined with an excess indium supply during growth, "ice cream cone" type structures are formed with a nanowire "cone" and an indium-based "ice cream" droplet on top for both InP and InN. Surface polycrystallinity and annihilation of the catalyst tip of the conical InP nanowires are observed when the indium supply is turned off during the growth process. This growth design technique is extended to create single-crystal InN nanowires with the same morphology. Conical InN nanowires with an enlarged base are obtained through the use of an excess combined Au-In growth catalyst. Electrochemical studies of the InP nanowires on silicon demonstrate a reduction photocurrent as a proof of photovolatic behavior and provide insight as to how the observed surface polycrystallinity and the resulting interface affect these device-level properties. Additionally, a photovoltage is induced in both types of conical InN nanowires on silicon, which is not replicated in epitaxial InN thin films.

  3. Solvothermal synthesis of InP quantum dots and their enhanced luminescent efficiency by post-synthetic treatments.

    Byun, Ho-June; Lee, Ju Chul; Yang, Heesun

    2011-03-01

    InP quantum dots (QDs) were solvothermally synthesized by using a greener phosphorus source of P(N(CH(3))(2))(3) instead of highly toxic P(TMS)(3) widely used, and subsequently subjected to a size-sorting processing. While as-grown QDs showed an undetectably low emission intensity, post-synthetic treatments such as photo-etching, photo-radiation, and photo-assisted ZnS shell coating gave rise to a substantial increase in emission efficiency due to the effective removal and passivation of surface states. The emission efficiency of the photo-etched QDs was further enhanced by a consecutive UV photo-radiation, attributable to the photo-oxidation at QD surface. Furthermore, a relatively thick ZnS shell on the surface of InP QDs that were surface-modified with hydrophilic ligands beforehand was photochemically generated in an aqueous solution at room temperature. The resulting InP/ZnS core/shell QDs, emitting from blue to red wavelengths, were more efficient than the above photo-treated InP QDs, and their luminescent properties (emission bandwidth and quantum yield) were comparable to those of InP QDs synthesized with P(TMS)(3). Structural, size, and compositional analyses on InP/ZnS QDs were also conducted to elucidate their core/shell structure. Copyright © 2010 Elsevier Inc. All rights reserved.

  4. Electronic properties of pure and p-type doped hexagonal sheets and zigzag nanoribbons of InP

    Longo, R C; Carrete, J; Alemany, M M G; Gallego, L J

    2013-01-01

    Unlike graphene, a hexagonal InP sheet (HInPS) cannot be obtained by mechanical exfoliation from the native bulk InP, which crystallizes in the zinc blende structure under ambient conditions. However, by ab initio density functional theory calculations we found that a slightly buckled HInPS is stable both in pristine form and when doped with Zn atoms; the same occurred for hydrogen-passivated zigzag InP nanoribbons (ZInPNRs), quasi-one-dimensional versions of the quasi-two-dimensional material. We investigated the electronic properties of both nanostructures, in the latter case also in the presence of an external transverse electric field, and the results are compared with those of hypothetical planar HInPS and ZInPNRs. The band gaps of planar ZInPNRs were found to be tunable by the choice of strength of this field, and to show an asymmetric behavior under weak electric fields, by which the gap can either be increased or decreased depending on their direction; however, this effect is absent from slightly buckled ZInPNRs. The binding energies of the acceptor impurity states of Zn-doped HInPS and ZInPNRs were found to be similar and much larger than that of Zn-doped bulk InP. These latter findings show that the reduction of the dimensionality of these materials limits the presence of free carriers. (paper)

  5. Integrated 1 GHz 4-channel InP phasar based WDM-receiver with Si bipolar frontend array

    Steenbergen, C.A.M.; Vreede, de L.C.N.; Dam, van C.; Scholtes, T.L.M.; Smit, M.K.; Tauritz, J.L.; Pedersen, J.W.; Moerman, I.; Verbeek, B.H.; Baets, R.G.F.

    1995-01-01

    An integrated 4-channel WDM-receiver frontend with 1 GHz channel bandwidth is described. The receiver consists of an integrated wavelength demultiplexer with photodiodes in InP technology connected through bond wires with a 4 channel Si bipolar transimpedance amplifier mounted on an epoxy board. The

  6. Balanced G-band Gm-boosted frequency doublers in transferred substrate InP HBT technology

    Johansen, Tom Keinicke; Thualfiqar, Al-Sawaf; Weimann, Nils

    2016-01-01

    In this paper, balanced G-band Gm-boosted frequency doublers in transferred substrate (TS) InP HBT technology are reported for the first time. The Gm-boosted frequency doublers consist of a phase compensated Marchand balun, Gm-boosted doubler stage, and an optional cascode gain stage at the outpu...

  7. A high conversion-gain Q-band InP DHBT subharmonic mixer using LO frequency doubler

    Johansen, Tom Keinicke; Vidkjær, Jens; Krozer, Viktor

    2008-01-01

    The paper presents analysis and design of a Q-band subharmonic mixer (SHM) with high conversion gain. The SHM consists of a local oscillator (LO) frequency doubler, RF pre-amplifier, and single-ended mixer. The SHM has been fabricated in a high-speed InP double heterojunction bipolar transistor (...

  8. Submicron InP DHBT technology for high-speed high-swing mixed-signal ICs

    Godin, Jean; Nodjiadjim, V.; Riet, Muriel

    2008-01-01

    We report on the development of a submicron InP DHBT technology, optimized for the fabrication of 50-GHz-clock mixed signal ICs. In-depth study of device geometry and structure has allowed to get the needed performances and yield. Special attention has been paid to critical thermal behavior. Vari...... applications of interest....

  9. Multi-wavelength laser based on an arrayed waveguide grating and Sagnac loop reflectors monolithically integrated on InP

    Muñoz, P.; García-Olcina, R.; Doménech, J.D.; Rius, M.; Capmany, J.; Chen, L.R.; Habib, C.; Leijtens, X.J.M.; Vries, de T.; Heck, M.J.R.; Augustin, L.M.; Nötzel, R.; Robbins, D.J.

    2010-01-01

    In this paper, a multi-wavelength laser monolithically integrated on InP is presented. A linear laser cavity is built between two integrated Sagnac loop reflectors, with an Arrayed Waveguide Grating (AWG) as frequency selective device, and Semiconductor Optical Amplifiers (SOA) as gain sections. The

  10. Hydrogen passivation of n+p and p+n heteroepitaxial InP solar cell structures

    Chatterjee, B.; Ringel, S. A.; Hoffman, R., Jr.

    1995-01-01

    High-efficiency, heteroepitaxial (HE) InP solar cells, grown on GaAs, Si or Ge substrates, are desirable for their mechanically strong, light-weight and radiation-hard properties. However, dislocations, caused by lattice mismatch, currently limit the performance of the HE cells. This occurs through shunting paths across the active photovoltaic junction and by the formation of deep levels. In previous work we have demonstrated that plasma hydrogenation is an effective and stable means to passivate the electrical activity of dislocations in specially designed HE InP test structures. In this work, we present the first report of successful hydrogen passivation in actual InP cell structures grown on GaAs substrates by metalorganic chemical vapor deposition (MOCVD). We have found that a 2 hour exposure to a 13.56 MHz hydrogen plasma at 275 C reduces the deep level concentration in HE n+n InP cell structures from as-grown values of approximately 10(exp 15)/cm(exp -3), down to 1-2 x 10(exp 13)/cm(exp -3). The deep levels in the p-type base region of the cell structure match those of our earlier p-type test structures, which were attributed to dislocations or related point defect complexes. All dopants were successfully reactivated by a 400 C, 5 minute anneal with no detectable activation of deep levels. I-V analysis indicated a subsequent approximately 10 fold decrease in reverse leakage current at -1 volt reverse bias, and no change in the forward biased series resistance of the cell structure which indicates complete reactivation of the n+ emitter. Furthermore, electrochemical C-V profiling indicates greatly enhanced passivation depth, and hence hydrogen diffusion, for heteroepitaxial structures when compared with identically processed homoepitaxial n+p InP structures. An analysis of hydrogen diffusion in dislocated InP will be discussed, along with comparisons of passivation effectiveness for n+p versus p+n heteroepitaxial cell configurations. Preliminary hydrogen

  11. AES, EELS and TRIM simulation method study of InP(100 subjected to Ar+, He+ and H+ ions bombardment.

    Abidri B.

    2012-06-01

    Full Text Available Auger Electron Spectroscopy (AES and Electron Energy Loss Spectroscopy (EELS have been performed in order to investigate the InP(100 surface subjected to ions bombardment. The InP(100 surface is always contaminated by carbon and oxygen revealed by C-KLL and O-KLL AES spectra recorded just after introduction of the sample in the UHV spectrometer chamber. The usually cleaning process of the surface is the bombardment by argon ions. However, even at low energy of ions beam (300 eV indium clusters and phosphorus vacancies are usually formed on the surface. The aim of our study is to compare the behaviour of the surface when submitted to He+ or H+ ions bombardment. The helium ions accelerated at 500V voltage and for 45 mn allow removing contaminants but induces damaged and no stoichiometric surface. The proton ions were accelerated at low energy of 500 eV to bombard the InP surface at room temperature. The proton ions broke the In-P chemical bonds to induce the formation of In metal islands. Such a chemical reactivity between hydrogen and phosphorus led to form chemical species such as PH and PH3, which desorbed from the surface. The chemical susceptibly and the small size of H+ advantaged their diffusion into bulk. Since the experimental methods alone were not able to give us with accuracy the disturbed depth of the target by these ions. We associate to the AES and EELS spectroscopies, the TRIM (Transport and Range of Ions in Matter simulation method in order to show the mechanism of interaction between Ar+, He+ or H+ ions and InP and determine the disturbed depth of the target by argon, helium or proton ions.

  12. High brightness InP micropillars grown on silicon with Fermi level splitting larger than 1 eV.

    Tran, Thai-Truong D; Sun, Hao; Ng, Kar Wei; Ren, Fan; Li, Kun; Lu, Fanglu; Yablonovitch, Eli; Chang-Hasnain, Constance J

    2014-06-11

    The growth of III-V nanowires on silicon is a promising approach for low-cost, large-scale III-V photovoltaics. However, performances of III-V nanowire solar cells have not yet been as good as their bulk counterparts, as nanostructured light absorbers are fundamentally challenged by enhanced minority carriers surface recombination rates. The resulting nonradiative losses lead to significant reductions in the external spontaneous emission quantum yield, which, in turn, manifest as penalties in the open-circuit voltage. In this work, calibrated photoluminescence measurements are utilized to construct equivalent voltage-current characteristics relating illumination intensities to Fermi level splitting ΔF inside InP microillars. Under 1 sun, we show that splitting can exceed ΔF ∼ 0.90 eV in undoped pillars. This value can be increased to values of ΔF ∼ 0.95 eV by cleaning pillar surfaces in acidic etchants. Pillars with nanotextured surfaces can yield splitting of ΔF ∼ 0.90 eV, even though they exhibit high densities of stacking faults. Finally, by introducing n-dopants, ΔF of 1.07 eV can be achieved due to a wider bandgap energy in n-doped wurzite InP, the higher brightness of doped materials, and the extraordinarily low surface recombination velocity of InP. This is the highest reported value for InP materials grown on a silicon substrate. These results provide further evidence that InP micropillars on silicon could be a promising material for low-cost, large-scale solar cells with high efficiency.

  13. X-ray photoelectron spectroscopy/Ar+ ion profile study of thin oxide layers on InP

    Thurgate, S.M.; Erickson, N.E.

    1990-01-01

    The effect of incremental ion bombardment on the surface layers of an aqua regia etched InP sample was studied by monitoring the components of the In 3d 5/2 and O 1s x-ray photoelectron spectroscopy (XPS) lines as the sample was bombarded with low energy (1 keV) Ar + ions. The changes in the stoichiometry of the surface produced large shifts in the position of the In 3d and O 1s lines that were not paralleled by shifts in the P 2p line. Analysis of these shifts indicated that the surface was covered with a mixture of indium hydroxide and indium phosphate, with the phosphate closer to the InP substrate. It is proposed that this layer structure is due to differences in the dissolution rates of the oxidation products in the acid etch and the effect of the distilled water rinse. It may be possible to alter the composition of such oxides by carefully tailoring the etch conditions to optimize the kinetics for the particular oxide phase required. The analysis of the XPS lines also showed that the InP substrate was damaged at very low ion doses, and finally decomposed by the ion beam. When the ion ''cleaned'' sample was exposed to oxygen, a different oxide system was produced which consisted largely of In 2 O 3 and InPO 4 [or In(PO 3 ) x ]. This model of the oxidized surface of InP is consistent with other measurements and we conclude that ion milling together with XPS and careful curve fitting can be used to find the nature of the thin oxides on InP

  14. Einfluss einer vierstündigen Hypoxieexposition (12,5% O 2) auf die Expression von hypoxie-und stressinduzierbaren Proteinen in Zusammenhang mit Antioxidantien

    Höchst, Katrin

    2009-01-01

    Eine adäquate Sauerstoffversorgung des menschlichen Organismus ist eine essentielle Grundvoraussetzung für die Funktion aller Organe und Körpersysteme. In dieser Arbeit beschäftigen wir uns mit der Auswirkung von Hypoxie auf das Immunsystem, was auch im Sport in Bezug auf Höhentraining von Bedeutung ist. Wir untersuchten den Effekt moderater Hypoxie auf die Regulation von verschiedenen Stressantworten des Immunsystems (oxidativer Burst, Phagozytose, Expression der Hitzschockproteine HSP ...

  15. InP MMIC Chip Set for Power Sources Covering 80-170 GHz

    Ngo, Catherine

    2001-01-01

    We will present a Monolithic Millimeter-wave Integrated Circuit (MMIC) chip set which provides high output-power sources for driving diode frequency multipliers into the terahertz range. The chip set was fabricated at HRL Laboratories using a 0.1-micrometer gate-length InAlAs/InGaAs/InP high electron mobility transistor (HEMT) process, and features transistors with an f(sub max) above 600 GHz. The HRL InP HEMT process has already demonstrated amplifiers in the 60-200 GHz range. In this paper, these high frequency HEMTs form the basis for power sources up to 170 GHz. A number of state-of-the-art InP HEMT MMICs will be presented. These include voltage-controlled and fixed-tuned oscillators, power amplifiers, and an active doubler. We will first discuss an 80 GHz voltage-controlled oscillator with 5 GHz of tunability and at least 17 mW of output power, as well as a 120 GHz oscillator providing 7 mW of output power. In addition, we will present results of a power amplifier which covers the full WRIO waveguide band (75-110 GHz), and provides 40-50 mW of output power. Furthermore, we will present an active doubler at 164 GHz providing 8% bandwidth, 3 mW of output power, and an unprecedented 2 dB of conversion loss for an InP HEMT MMIC at this frequency. Finally, we will demonstrate a power amplifier to cover 140-170 GHz with 15-25 mW of output power and 8 dB gain. These components can form a power source in the 155-165 GHz range by cascading the 80 GHz oscillator, W-band power amplifier, 164 GHz active doubler and final 140-170 GHz power amplifier for a stable, compact local oscillator subsystem, which could be used for atmospheric science or astrophysics radiometers.

  16. Spatial modulation of above-the-gap cathodoluminescence in InP nanowires

    Tizei, L H G; Zagonel, L F; Ugarte, D; Cotta, M A; Tencé, M; Stéphan, O; Kociak, M; Chiaramonte, T

    2013-01-01

    We report the observation of light emission on wurtzite InP nanowires excited by fast electrons. The experiments were performed in a scanning transmission electron microscope using an in-house-built cathodoluminescence detector. Besides the exciton emission, at 850 nm, emission above the band gap from 400 to 800 nm was observed. In particular, this broad emission presented systematic periodic modulations indicating variations in the local excitation probability. The physical origin of the detected emission is not clear. Measurements of the spatial variation of the above-the-gap emission points to the formation of leaky cavity modes of a plasmonic nature along the nanowire length, indicating the wave nature of the excitation. We propose a phenomenological model, which fits closely the observed spatial variations. (paper)

  17. Spatial modulation of above-the-gap cathodoluminescence in InP nanowires

    Tizei, L. H. G.; Zagonel, L. F.; Tencé, M.; Stéphan, O.; Kociak, M.; Chiaramonte, T.; Ugarte, D.; Cotta, M. A.

    2013-12-01

    We report the observation of light emission on wurtzite InP nanowires excited by fast electrons. The experiments were performed in a scanning transmission electron microscope using an in-house-built cathodoluminescence detector. Besides the exciton emission, at 850 nm, emission above the band gap from 400 to 800 nm was observed. In particular, this broad emission presented systematic periodic modulations indicating variations in the local excitation probability. The physical origin of the detected emission is not clear. Measurements of the spatial variation of the above-the-gap emission points to the formation of leaky cavity modes of a plasmonic nature along the nanowire length, indicating the wave nature of the excitation. We propose a phenomenological model, which fits closely the observed spatial variations.

  18. Energy and orientation dependence of electron-irradiation-induced defects in InP

    Sibille, A.; Suski, J.; LeRoux, G.

    1984-01-01

    The concentration of several electron-irradiation-induced deep defect levels in InP has been measured by deep-level transient spectroscopy (DLTS) as a function of electron energy. The dominant centers exhibit a threshold at about 100 keV, which clearly points to a primary production event by electron--phosphorus-atom collision. This unambiguous determination allowed a test of the recently proposed orientation dependence technique to find the nature of the sublattice involved in the collision process for III-V compounds. A good quantitative agreement is obtained with a hard-sphere model for secondary collisions if disorientation of the beam in the sample is taken into account. Other traps exhibit higher thresholds which correspond either to indium-atom displacements or to the involvement of secondary collisions in the production event

  19. Phosphorous vacancy nearest neighbor hopping induced instabilities in InP capacitors II. Computer simulation

    Juang, M.T.; Wager, J.F.; Van Vechten, J.A.

    1988-01-01

    Drain current drift in InP metal insulator semiconductor devices display distinct activation energies and pre-exponential factors. The authors have given evidence that these result from two physical mechanisms: thermionic tunneling of electrons into native oxide traps and phosphorous vacancy nearest neighbor hopping (PVNNH). They here present a computer simulation of the effect of the PVNHH mechanism on flatband voltage shift vs. bias stress time measurements. The simulation is based on an analysis of the kinetics of the PVNNH defect reaction sequence in which the electron concentration in the channel is related to the applied bias by a solution of the Poisson equation. The simulation demonstrates quantitatively that the temperature dependence of the flatband shift is associated with PVNNH for temperatures above room temperature

  20. Wide bandgap, strain-balanced quantum well tunnel junctions on InP substrates

    Lumb, M. P.; Yakes, M. K.; Schmieder, K. J.; Affouda, C. A.; Walters, R. J.; González, M.; Bennett, M. F.; Herrera, M.; Delgado, F. J.; Molina, S. I.

    2016-01-01

    In this work, the electrical performance of strain-balanced quantum well tunnel junctions with varying designs is presented. Strain-balanced quantum well tunnel junctions comprising compressively strained InAlAs wells and tensile-strained InAlAs barriers were grown on InP substrates using solid-source molecular beam epitaxy. The use of InAlAs enables InP-based tunnel junction devices to be produced using wide bandgap layers, enabling high electrical performance with low absorption. The impact of well and barrier thickness on the electrical performance was investigated, in addition to the impact of Si and Be doping concentration. Finally, the impact of an InGaAs quantum well at the junction interface is presented, enabling a peak tunnel current density of 47.6 A/cm 2 to be realized.

  1. Si Incorporation in InP Nanowires Grown by Au-Assisted Molecular Beam Epitaxy

    Lorenzo Rigutti

    2009-01-01

    Full Text Available We report on the growth, structural characterization, and conductivity studies of Si-doped InP nanowires grown by Au-assisted molecular beam epitaxy. It is shown that Si doping reduces the mean diffusion length of adatoms on the lateral nanowire surface and consequently reduces the nanowire growth rate and promotes lateral growth. A resistivity as low as 5.1±0.3×10−5 Ω⋅cm is measured for highly doped nanowires. Two dopant incorporation mechanisms are discussed: incorporation via catalyst particle and direct incorporation on the nanowire sidewalls. The first mechanism is shown to be less efficient than the second one, resulting in inhomogeneous radial dopant distribution.

  2. The Achievement of Near-Theoretical-Minimum Contact Resistance to InP

    Fatemi, Navid S.; Weizer, Victor G.

    1993-01-01

    We have investigated the electrical and metallurgical behavior of the InP/Au/Ni contact system. We show that when a layer of Au, 100 A or more in thickness, is introduced between n-InP and Ni contact metallization, specific contact resistivity R, values in the low 10(exp -8) Omega cm(exp 2) range are achieved after sintering. It is suggested that these ultralow values of R(sub c) are due to the presence, at the metal-InP interface, of a Ni3P layer combined with a stoichiometry change in the InP surface. We show, in addition, that it is possible to achieve very low R(sub c) values with this system without incurring device destroying sinter-induced metallurgical interdiffusion.

  3. Identification of defects in undoped semi-insulating InP by positron lifetime

    Mao Weidong; Wang Shaojie; Wang Zhu

    2001-01-01

    Positron lifetime measurements, carried out over the temperature range of 10-300 K, have been used to investigate defects in two undoped semi-insulating InP samples. The positron lifetime spectra were analysed by both PATFIT and MELT techniques. The results at room temperature reveal a positron lifetime of around 273 ps, which is associated with indium vacancies V In or V In -hydrogen complexes. The positron average lifetime is temperature dependent and decreases with increasing temperature at the beginning (≤ 80 K and ≤ 120 K), and then remains unchanged, which is attributed to the influence of negative vacancies and detrapping of the positron from those negative ions of Mg, Zn, Ag and Ca with ionization level (1-)

  4. ODMR of shallow donors in Zn-doped LEC-grown InP

    Trombetta, J.M.; Kennedy, T.A.

    1990-01-01

    ODMR spectra observed while monitoring the shallow donor-shallow acceptor pair emission in Zn-doped LEC-grown InP display strong features in the region near the conduction electron value of g = 1.20. In addition to a previously observed narrow line, the authors observe a much broader resonance which dominates at low photoexcitation intensity. This broader line is interpreted as the unresolved exchange split resonances of electrons bound to residual shallow donors. The exchange broadening arises from interaction with nearby paramagnetic centers. Both resonances result in a decrease in the shallow-donor-to shallow-acceptor radiative recombination and give evidence for pair recombination processes which compete with this emission

  5. Stability investigation for InP DHBT mm‐wave power amplifier

    Yan, Lei; Johansen, Tom Keinicke; Kammersgaard, Jacob

    2013-01-01

    microwave integrated circuit power amplifier. Experimental results from a redesigned power amplifier with improved stability are presented to confirm that the previously detected oscillation loop is removed using odd‐mode stabilization resistors with the correct choice of values and locations. © 2012 Wiley......In this article, we discuss stability issues for mm‐wave monolithic integrated power amplifiers using InP double heterojunction bipolar transistor (DHBT) technology targeting E‐band applications at 71–76 GHz and 81–86 GHz. Different stability detection methods based on the classical two‐port K......‐Δs pair, linear three‐port graphical analysis, system identifications, circuit modal analysis, and normalized determinant function are all reviewed. The corresponding techniques are employed to predict the occurrence of instability at 15 GHz observed during measurements on a fabricated monolithic...

  6. Study of carrier concentration in single InP nanowires by luminescence and Hall measurements

    Lindgren, David; Hultin, Olof; Heurlin, Magnus; Storm, Kristian; Borgström, Magnus T; Samuelson, Lars; Gustafsson, Anders

    2015-01-01

    The free electron carrier concentrations in single InP core–shell nanowires are determined by micro-photoluminescence, cathodoluminescence (CL) and Hall effect measurements. The results from luminescence measurements were obtained by solving the Fermi–Dirac integral, as well as by analyzing the peak full width at half maximum (FWHM). Furthermore, the platform used for Hall effect measurements, combined with spot mode CL spectroscopy, is used to determine the carrier concentrations at specific positions along single nanowires. The results obtained via luminescence measurements provide an accurate and rapid feedback technique for the epitaxial development of doping incorporation in nanowires. The technique has been employed on several series of samples in which growth parameters, such as V/III-ratio, temperature and dopant flows, were investigated in an optimization procedure. The correlation between the Hall effect and luminescence measurements for extracting the carrier concentration of different samples were in excellent agreement. (paper)

  7. Radiation hardening of InP solar cells for space applications

    Vilela, M. F.; Freundlich, A.; Monier, C.; Newman, F.; Aguilar, L.

    1998-01-01

    The aim of this work is to develop a radiation resistant thin InP-based solar cells for space applications on more mechanically resistant, lighter, and cheaper substrates. In this paper, we present the development of a p + /nn + InP-based solar cell structures with very thin emitter and base layers. A thin emitter helps to increase the collection of carriers generated by high energy incident photons from the solar spectrum. The use of a thin n base structure should improve the radiation resistance of this already radiation resistant technology. A remarkable improvement of high energy photons response is shown for InP solar cells with emitters 400 A thick

  8. Photovoltaic characteristics of n(+)pp(+) InP solar cells grown by OMVPE

    Tyagi, S.; Singh, K.; Bhimnathwala, H.; Ghandhi, S. K.; Borrego, J. M.

    1990-01-01

    The photovoltaic characteristics of n(+)/p/p(+) homojunction InP solar cells fabricated by organometallic vapor-phase epitaxy (OMVPE) are described. The cells are characterized by I-V, C-V and quantum efficiency measurements, and simulations are used to obtain various device and material parameters. The I-V characteristics show a high recombination rate in the depletion region; this is shown to be independent of the impurity used. It is shown that cadmium is easier to use as an acceptor for the p base and p(+) buffer and is therefore beneficial. The high quantum efficiency of 98 percent at long wavelengths measured in these cells indicates a very good collection efficiency in the base. The short-wavelength quantum efficiency is poor, indicating a high surface recombination.

  9. Scientific and technical progress in high-energy astrophysics at INPE

    Bui-Van, N.A.; Jayanthi, U.B.; Jardim, J.O.D.; Braga, J.; Santo, C.M.E.

    1984-01-01

    The recent advances in high-energy Astrophysics pertains to the study of compact objects in galactic nuclei, binary systems and pulsars. These aspects are best understood by the study of the emissions in X- and gamma rays of these objects through the temporal variation in flux and spectrum. The Southern Hemisphere offers some of the unique objects for investigations such as galactic center, the Vela pulsar etc. For high temporal and spectra resolution studies two telescopes 'GeLi' and 'Pulsar' were designed and constructed. To support these scientific activities, a program in balloon launching and data acquisition facilities has been developed since 1971. The 'Balloon Launching Center' of INPE has capacity to launch balloons of -850,000 m 3 with payloads weighting about 1,000 Kg. Taking advantage of these facilities, project 'Bantar', with the goal to measure the atmospheric gamma-ray radiation in the Antartic Region, is under progress. (Author) [pt

  10. Locally measuring the adhesion of InP directly bonded on sub-100 nm patterned Si

    Pantzas, K; Patriarche, G; Beaudoin, G; Itawi, A; Sagnes, I; Talneau, A; Bourhis, E Le; Troadec, D

    2016-01-01

    A nano-scale analogue to the double cantilever experiment that combines instrumented nano-indentation and atomic force microscopy is used to precisely and locally measure the adhesion of InP bonded on sub-100 nm patterned Si using oxide-free or oxide-mediated bonding. Surface-bonding energies of 0.548 and 0.628 J m"−"2, respectively, are reported. These energies correspond in turn to 51% and 57% of the surface bonding energy measured in unpatterned regions on the same samples, i.e. the proportion of unetched Si surface in the patterned areas. The results show that bonding on patterned surfaces can be as robust as on unpatterned surfaces, provided care is taken with the post-patterning surface preparation process and, therefore, open the path towards innovative designs that include patterns embedded in the Si guiding layer of hybrid III-V/Si photonic integrated circuits. (paper)

  11. Wide bandgap, strain-balanced quantum well tunnel junctions on InP substrates

    Lumb, M. P. [The George Washington University, Washington, DC 20037 (United States); US Naval Research Laboratory, Washington, DC 20375 (United States); Yakes, M. K.; Schmieder, K. J.; Affouda, C. A.; Walters, R. J. [US Naval Research Laboratory, Washington, DC 20375 (United States); González, M.; Bennett, M. F. [Sotera Defense Solutions, Annapolis Junction, Maryland 20701 (United States); US Naval Research Laboratory, Washington, DC 20375 (United States); Herrera, M.; Delgado, F. J.; Molina, S. I. [University of Cádiz, 11510, Puerto Real, Cádiz (Spain)

    2016-05-21

    In this work, the electrical performance of strain-balanced quantum well tunnel junctions with varying designs is presented. Strain-balanced quantum well tunnel junctions comprising compressively strained InAlAs wells and tensile-strained InAlAs barriers were grown on InP substrates using solid-source molecular beam epitaxy. The use of InAlAs enables InP-based tunnel junction devices to be produced using wide bandgap layers, enabling high electrical performance with low absorption. The impact of well and barrier thickness on the electrical performance was investigated, in addition to the impact of Si and Be doping concentration. Finally, the impact of an InGaAs quantum well at the junction interface is presented, enabling a peak tunnel current density of 47.6 A/cm{sup 2} to be realized.

  12. Radiation-hard, high efficiency InP solar cell and panel development

    Keavney, C.J.; Vernon, S.M.; Haven, V.E.; Nowlan, M.J.; Walters, R.J.; Slatter, R.L.; Summers, G.P.

    1991-01-01

    Indium phosphide solar cells with efficiencies over 19% (Air mass zero, 25 degrees C) and area of 4 cm 2 have been made and incorporated into prototype panels. The panels will be tested in space to confirm the high radiation resistance expected from InP solar cells, which makes the material attractive for space use, particularly in high-radiation orbits. Laboratory testing indicated an end-of-life efficiency of 15.5% after 10 15 1 MeV electrons, and 12% after 10 16 . These cells are made by metalorganic chemical vapor deposition, and have a shallow homojunction structure. The manufacturing process is amendable to scale-up to larger volumes; more than 200 cells were produced in the laboratory operation. Cell performance, radiation degradation, annealing behavior, and results of deep level transient spectroscopy studies are presented in this paper

  13. High uniformity of self-organized InAs quantum wires on InAlAs buffers grown on misoriented InP(001)

    Wang Yuanli; Jin, P.; Ye, X.L.; Zhang, C.L.; Shi, G.X.; Li, R.Y.; Chen, Y.H.; Wang, Z.G.

    2006-01-01

    Highly uniform InAs quantum wires (QWRs) have been obtained on the In 0.5 Al 0.5 As buffer layer grown on the InP substrate 8 (convolutionsign) off (001) towards (111) by molecular-beam epitaxy. The quasi-periodic composition modulation was spontaneously formed in the In 0.5 Al 0.5 As buffer layer on this misoriented InP (001). The width and period of the In-rich bands are about 10 and 40 nm, respectively. The periodic In-rich bands play a major role in the sequent InAs QWRs growth and the InAs QWRs are well positioned atop In-rich bands. The photoluminescence (PL) measurements showed a significant reduction in full width at half maximum and enhanced PL efficiency for InAs QWRs on misoriented InP(001) as compared to that on normal InP(001)

  14. Lattice defects in LPE InP-InGaAsP-InGaAs structure epitaxial layers on InP substrates

    Ishida, K.; Matsumoto, Y.; Taguchi, K.

    1982-01-01

    Lattice defects generated during LPE growth of InP-InGaAsP-InGaAs structure epitaxial layers on InP substrates are studied. Two different kinds of dislocations are observed at the two interfaces of the epitaxial layers; at the InP-InGaAsP interface, misfit dislocations are generated in the InP layer by carry over of InGaAsP melt into the InP one and at the InGaAs-InP interface, V-shaped dislocations are generated in the InGaAs layer. It is shown that the critical amount of lattice mismatch to suppress generation of misfit dislocations in InP is about two times smaller than that of other III-V compound semiconductors. Conditions to suppress the generation of these dislocations are clarified. (author)

  15. Three-Stage InP Submillimeter-Wave MMIC Amplifier

    Pukala, David; Samoska, Lorene; Man, King; Gaier, Todd; Deal, William; Lai, Richard; Mei, Gerry; Makishi, Stella

    2008-01-01

    A submillimeter-wave monolithic integrated- circuit (S-MMIC) amplifier has been designed and fabricated using an indium phosphide (InP) 35-nm gate-length high electron mobility transistor (HEMT) device, developed at Northrop Grumman Corporation. The HEMT device employs two fingers each 15 micrometers wide. The HEMT wafers are grown by molecular beam epitaxy (MBE) and make use of a pseudomorphic In0.75Ga0.25As channel, a silicon delta-doping layer as the electron supply, an In0.52Al0.48As buffer layer, and an InP substrate. The three-stage design uses coplanar waveguide topology with a very narrow ground-to-ground spacing of 14 micrometers. Quarter-wave matching transmission lines, on-chip metal-insulator-metal shunt capacitors, series thin-film resistors, and matching stubs were used in the design. Series resistors in the shunt branch arm provide the basic circuit stabilization. The S-MMIC amplifier was measured for S-parameters and found to be centered at 320 GHz with 13-15-dB gain from 300-345 GHz. This chip was developed as part of the DARPA Submillimeter Wave Imaging Focal Plane Technology (SWIFT) program (see figure). Submillimeter-wave amplifiers could enable more sensitive receivers for earth science, planetary remote sensing, and astrophysics telescopes, particularly in radio astronomy, both from the ground and in space. A small atmospheric window at 340 GHz exists and could enable ground-based observations. However, the submillimeter-wave regime (above 300 GHz) is best used for space telescopes as Earth s atmosphere attenuates most of the signal through water and oxygen absorption. Future radio telescopes could make use of S-MMIC amplifiers for wideband, low noise, instantaneous frequency coverage, particularly in the case of heterodyne array receivers.

  16. Studies on semiconductors based on InP with sub-ps response times

    Biermann, K.

    2007-01-01

    The present work describes investigation of new material concepts accomplished using molecular-beam-epitaxy (MBE) growth for application in ultra-fast photonic components. Nominally undoped and Be doped GaInAs/AlInAs multiple-quantumwell structures (MQW) were grown by MBE at growth temperatures down to 100 C (LT-MBE) on semi-insulating InP substrates. Crystalline, electric and optical properties of as-grown and annealed structures were investigated. Energy states near the conduction band of GaInAs determine the electrical and optical properties of LT-MQWs. The dynamics of charge carrier relaxation was studied by means of pump and probe experiments. Measurements of the differential transmission when excited by an additional cw laser and measurements utilizing two closely sequenced pump pulses support the capability of Be doped as-grown (annealed) LT GaInAs/AlInAs MQW structures for use in optical switches at switching frequencies in the 1 Tbit/s (250 Gbit/s) range. The voltage-induced change of interband transmission of InP based quantumcascade-lasers (QCL) during pulsed mode operation was analyzed by means of 8 band k.p calculations. The impacts of varying charge carrier distributions and of electrically heated samples can be neglected compared to the dominating effect of the electrical field on the interband transmission. The impact of MBE growth parameters on the interface quality of AlAsSb/ GaInAs heterostructures were determined by means of Hall measurements, temperature- and intensity-dependent PL measurements and spectral measurements of the interband- and intersubband-absorption. The impact of In segregation and Sb diffusion on the intersubband absorption was analyzed on the basis of bandstructure calculations. Intersubband transitions at wavelengths of about 1.8 μm (1.55 μm) were successfully achieved in MQW (coupled QW) structures. (orig.)

  17. Effects of nitrogen incorporation in HfO(2) grown on InP by atomic layer deposition: an evolution in structural, chemical, and electrical characteristics.

    Kang, Yu-Seon; Kim, Dae-Kyoung; Kang, Hang-Kyu; Jeong, Kwang-Sik; Cho, Mann-Ho; Ko, Dae-Hong; Kim, Hyoungsub; Seo, Jung-Hye; Kim, Dong-Chan

    2014-03-26

    We investigated the effects of postnitridation on the structural characteristics and interfacial reactions of HfO2 thin films grown on InP by atomic layer deposition (ALD) as a function of film thickness. By postdeposition annealing under NH3 vapor (PDN) at 600 °C, an InN layer formed at the HfO2/InP interface, and ionized NHx was incorporated in the HfO2 film. We demonstrate that structural changes resulting from nitridation of HfO2/InP depend on the film thickness (i.e., a single-crystal interfacial layer of h-InN formed at thin (2 nm) HfO2/InP interfaces, whereas an amorphous InN layer formed at thick (>6 nm) HfO2/InP interfaces). Consequently, the tetragonal structure of HfO2 transformed into a mixture structure of tetragonal and monoclinic because the interfacial InN layer relieved interfacial strain between HfO2 and InP. During postdeposition annealing (PDA) in HfO2/InP at 600 °C, large numbers of oxidation states were generated as a result of interfacial reactions between interdiffused oxygen impurities and out-diffused InP substrate elements. However, in the case of the PDN of HfO2/InP structures at 600 °C, nitrogen incorporation in the HfO2 film effectively blocked the out-diffusion of atomic In and P, thus suppressing the formation of oxidation states. Accordingly, the number of interfacial defect states (Dit) within the band gap of InP was significantly reduced, which was also supported by DFT calculations. Interfacial InN in HfO2/InP increased the electron-barrier height to ∼0.6 eV, which led to low-leakage-current density in the gate voltage region over 2 V.

  18. Farbe bekennen – Grüne Bibliotheken auf die Tagesordnung! Vortrag auf dem 103. Deutschen Bibliothekartag, Bremen, 5. Juni 2014

    Petra Hauke

    2014-12-01

    Full Text Available Was in vielen Ländern bereits im Alltag der Bibliotheken verankert ist, beginnt in Deutschland erst sehr zaghaft: Das Verantwortungsbewusstsein von Bibliotheken für die ökologische Bildung der Gesellschaft und die Konsequenzen daraus für die Bibliothekspraxis. Es ist höchste Zeit, in der deutschen Bibliothekslandschaft publik zu machen, was eine „Grüne Bibliothek“ sein kann – bezogen auf das Gebäude, die Ausstattung, das Management, die Services für die Nutzer. Anhand einer Checkliste wird gezeigt, wie Bibliotheken mit einem „grünen“ Konzept nicht nur selbst etwas für die ökologische Nachhaltigkeit tun können, sondern auch wie sie als Multiplikatoren in den Kommunen, Hochschulen und bei anderen Trägern Einfluss auf das ökologische Verhalten nehmen und damit einen wichtigen Beitrag für unsere Gesellschaft leisten. Bringing environmental awareness to libraries does not necessarily imply huge financial efforts or a big budget. Ecological sustainability is an undervalued aspect of the marketing strategy for libraries which has more impact on clients and on stakeholders than one would expect. Small steps in going green can make a big impact for the library’s image. Little financial input can produce an important marketing outcome. Activities in this field can be developed in cooperation with unpaid partners like non-governmental organisations (NGOs, Friends of the Library groups, library suppliers and, last but not least, the library users. A checklist on how to go green gives an overview of important aspects in planning, construction, and library operations in order to introduce the first “green footsteps”.

  19. Electronic properties of wurtzite-phase InP nanowires determined by optical and magneto-optical spectroscopy

    De Luca, Marta; Polimeni, Antonio

    2017-12-01

    Thanks to their peculiar shape and dimensions, semiconductor nanowires (NWs) are emerging as building components of novel devices. The presence of wurtzite (WZ) phase in the lattice structure of non-nitride III-V NWs is one of the most surprising findings in these nanostructures: this phase, indeed, cannot be found in the same materials in the bulk form, where the zincblende (ZB) structure is ubiquitous, and therefore the WZ properties are poorly known. This review focuses on WZ InP NWs, because growth techniques have reached a high degree of control on the structural properties of this material, and optical studies performed on high-quality samples have allowed determining the most useful electronic properties, which are reviewed here. After an introduction summarizing the reasons for the interest in WZ InP nanowires (Sec. I), we give an overview on growth process and structural and optical properties of WZ InP NWs (Sec. II). In Sec. III, a complete picture of the energy and symmetry of the lowest-energy conduction and valence bands, as assessed by polarization-resolved photoluminescence (PL) and photoluminescence-excitation (PLE) studies is drawn and compared to all the available theoretical information. The elastic properties of WZ InP (determined by PL under hydrostatic pressure) and the radiative recombination dynamics of spatially direct and indirect (namely, occurring across the WZ/ZB interfaces) transitions are also discussed. Section IV, focuses on the magneto-optical studies of WZ InP NWs. The diagram of the energy levels of excitons in WZ materials—with and without magnetic field—is first provided. Then, all theoretical and experimental information available about the changes in the transport properties (i.e., carrier effective mass) caused by the ZB→WZ phase variation are reviewed. Different NW/magnetic field geometrical configurations, sensitive to polarization selection rules, highlight anisotropies in the diamagnetic shifts, Zeeman splitting

  20. Effective Surface Passivation of InP Nanowires by Atomic-Layer-Deposited Al2O3 with POx Interlayer.

    Black, L E; Cavalli, A; Verheijen, M A; Haverkort, J E M; Bakkers, E P A M; Kessels, W M M

    2017-10-11

    III/V semiconductor nanostructures have significant potential in device applications, but effective surface passivation is critical due to their large surface-to-volume ratio. For InP such passivation has proven particularly difficult, with substantial depassivation generally observed following dielectric deposition on InP surfaces. We present a novel approach based on passivation with a phosphorus-rich interfacial oxide deposited using a low-temperature process, which is critical to avoid P-desorption. For this purpose we have chosen a PO x layer deposited in a plasma-assisted atomic layer deposition (ALD) system at room temperature. Since PO x is known to be hygroscopic and therefore unstable in atmosphere, we encapsulate this layer with a thin ALD Al 2 O 3 capping layer to form a PO x /Al 2 O 3 stack. This passivation scheme is capable of improving the photoluminescence (PL) efficiency of our state-of-the-art wurtzite (WZ) InP nanowires by a factor of ∼20 at low excitation. If we apply the rate equation analysis advocated by some authors, we derive a PL internal quantum efficiency (IQE) of 75% for our passivated wires at high excitation. Our results indicate that it is more reliable to calculate the IQE as the ratio of the integrated PL intensity at room temperature to that at 10 K. By this means we derive an IQE of 27% for the passivated wires at high excitation (>10 kW cm -2 ), which constitutes an unprecedented level of performance for undoped InP nanowires. This conclusion is supported by time-resolved PL decay lifetimes, which are also shown to be significantly higher than previously reported for similar wires. The passivation scheme displays excellent long-term stability (>7 months) and is additionally shown to substantially improve the thermal stability of InP surfaces (>300 °C), significantly expanding the temperature window for device processing. Such effective surface passivation is a key enabling technology for InP nanowire devices such as

  1. Crystal Structure of the N-Terminal RNA Recognition Motif of mRNA Decay Regulator AUF1

    Young Jun Choi

    2016-01-01

    Full Text Available AU-rich element binding/degradation factor 1 (AUF1 plays a role in destabilizing mRNAs by forming complexes with AU-rich elements (ARE in the 3′-untranslated regions. Multiple AUF1-ARE complexes regulate the translation of encoded products related to the cell cycle, apoptosis, and inflammation. AUF1 contains two tandem RNA recognition motifs (RRM and a Gln- (Q- rich domain in their C-terminal region. To observe how the two RRMs are involved in recognizing ARE, we obtained the AUF1-p37 protein covering the two RRMs. However, only N-terminal RRM (RRM1 was crystallized and its structure was determined at 1.7 Å resolution. It appears that the RRM1 and RRM2 separated before crystallization. To demonstrate which factors affect the separate RRM1-2, we performed limited proteolysis using trypsin. The results indicated that the intact proteins were cleaved by unknown proteases that were associated with them prior to crystallization. In comparison with each of the monomers, the conformations of the β2-β3 loops were highly variable. Furthermore, a comparison with the RRM1-2 structures of HuR and hnRNP A1 revealed that a dimer of RRM1 could be one of the possible conformations of RRM1-2. Our data may provide a guidance for further structural investigations of AUF1 tandem RRM repeat and its mode of ARE binding.

  2. Nitrogen emissions during pyrolysis and combustion; Einfluesse auf die Stickstofffreisetzung bei der Pyrolyse und Verbrennung

    Koepsel, R F; Friebel, J; Halang, S [Technische Univ. Bergakademie Freiberg (Germany). Inst. IEC

    1998-09-01

    Reduction of nitric oxide emissions during brown coal combustion is an important contribution to clean utilisation of this very important domestic primary energy source. In modern processes, the nitrogen contained in the fuels is the main source of oxides. The distribution of this nitrogen in the products can be influenced by modifying the degassing parameters especially in the first phase of combustion, i.e. pyrolysis. The heat-up rate, pressure, as well as the genesis and mineral content of the coal were found to be the main influencing paramters. Depending on the fuel characteristics (degree of coalification, concentration of volatile matter, ash composition), the nitrogen released during pyrolysis and the nitrogen retained in the solid residue contribute to the total emissions of nitric oxides in different degrees. (orig.) [Deutsch] Die Verminderung der Stickoxidemission bei der Verbrennung von Braunkohle stellt einen wichtigen Beitrag zur sauberen Verwertung dieses bedeutendsten einheimischen Primaerenergietraegers dar. In modernen Prozessen bildet dabei der im Brennstoff gebundene Stickstoff die Hauptquelle der Oxide. Insbesondere durch Einflussnahme auf die Entgasungsbedingungen waehrend der ersten Phase der Verbrennung - der Pyrolyse - kann die Verteilung dieses Stickstoffes auf die Produkte beeinflusst werden. Als wesentliche Einflussgroessen auf die Einbindung in den verbleibenden Koks und die Freisetzung fluechtiger N-haltiger Gase (HCN, NH{sub 3}) wurden die Aufheizgeschwindigkeit, der Druck und die Mineralsubstanz der Kohle gefunden. Eine wesentliche Einflussgroesse stellt daneben auch die Herkunft der Kohlen dar. In Abhaengigkeit von den Brennstoffeigenschaften (Inkohlungsgrad, Gehalt an fluechtigen Bestandteilen, Aschezusammensetzung) tragen der waehrend der Pyrolyse freigesetzte und der im festen Rueckstand verbleibende Stickstoff in unterschiedlichem Masse zur Gesamtemission an Stickoxiden bei. (orig.)

  3. Einfluss von abiotischen Faktoren auf Wuchs und Scopolamin-Biosynthese in Duboisia myoporoides.

    Ullrich, Sophie Friederike

    2014-09-01

    Full Text Available Duboisia ist eine in Australien beheimatete Pflanze aus der Familie der Nachtschattengewächse, die Tropanalkaloide als sekundäre Pflanzeninhaltsstoffe enthält, deren quantitativ und ökonomisch bedeutsamstes Scopolamin ist. Um neue Erkenntnisse hinsichtlich des Einflusses abiotischer Faktoren auf Wuchs und Scopolamin-Biosynthese zu gewinnen, wurden Pflanzen der Art Duboisia myoporoides in Hydrokultur in Klimakammern unter streng kontrollierten Bedingungen angebaut (kalibrierte Einstellungen für Beleuchtungsdauer, Lichtintensität und Temperatur. Wichtige Messgrößen stellten dabei Biomasse und Alkaloidgehalt dar, letzterer gemessen mittels UHPLC und LC-MS.

  4. Zwei Briefe auf Guaraní in Alexander von Humboldts Handschrift

    Manfred Ringmacher

    2014-12-01

    Full Text Available Gegenstand des Aufsatzes von Manfred Ringmacher sind zwei Briefe auf Guaraní in Alexander von Humboldts Handschrift. Die Originale der Abschriften wurden im Jahr 1800 in der ehemals jesuitisch betreuten Indianersiedlung Santa María la Mayor am Río Uruguay geschrieben und an den Vizekönig des spanischen Vizekönigreichs La Plata gesandt. Sie sind mit einer zeitgenössischen spanischen Übersetzung versehen; außerdem hat Alexander von Humboldt in französischer Sprache noch einige Erläuterungen gegeben.

  5. Öffentliche Wohnraumförderung — auf dem richtigen Weg?

    van Suntum, Ulrich; Gedaschko, Axel; Voigtländer, Michael; Schrooten, Mechthild; Theurl, Theresia

    2016-01-01

    Die hohen Flüchtlingszahlen und die wachsende Nachfrage nach Wohnungen in den Ballungsräumen haben die Politik veranlasst, die lange vernachlässigte öffentliche Wohnraumförderung wieder in den Blick zu nehmen. Um rasch neuen Wohnraum anzubieten, schlagen die Autoren unterschiedliche Maßnahmen vor. Dabei kommt es darauf an, sie effizient auf die Zielgruppe zuzuschneiden. Welche Gewichtung die Objekt- und die Subjektförderung dabei haben sollte, wird unterschiedlich bewertet. Genossenschaften s...

  6. Untersuchungen zum Einfluss einer Air-Liquid-Interphase auf die Differenzierung von Alveolarepithelzellen Typ II

    Sinis, Nektarios

    2003-01-01

    Die Dedifferenzierung der Alveolarepithelzellen Typ II stellt in vitro ein großes Problem dar. Zellen, die länger als 48 Stunden in vitro kultiviert werden tendieren zu einer Dedifferenzierung. Die vorliegende Arbeit stellt ein Air-Liquid-Interphasesystem zur Kultivierung von TypII-Zellen vor. Hierdurch ist es uns gelungen TypII-Zellen über einen Zeitraum von bis zu 14 Tagen in vitro auf einem hohen Grad der Differenzierung zu konservieren. Zellen die nicht so kultiviert wurden zeigten fr...

  7. Beeinflussung des Angebots im Lebensmitteleinzelhandel durch Konsumenteninformationen: Eine Anwendung auf Basis der Theory of Planned Behavior

    Mecking, Rebecca-Ariane

    2015-01-01

    Von Informationen, die Konsumenten z. B. über Kundenkarten dem Lebensmitteleinzelhandel (LEH) mitteilen, können auch sie selber profitieren, indem das Angebot besser an ihre Bedürfnisse angepasst wird. Basierend auf der Theory of Planned Behavior untersucht diese Arbeit, welche Faktoren entscheidend dafür sind, ob ein Konsument dem LEH zum Zwecke der Einflussnahme Informationen mitteilen möchte. Wichtig sind das Bewusstsein um diese Chance und ihre positiven Folgen. Sorgen um die Privatsphäre...

  8. Eröffnung des „Hauses der Astronomie“ auf dem Königsstuhl

    Pössel, Markus; Tschira, Klaus

    2012-01-01

    Mit dem „Haus der Astronomie“ (HdA) auf dem Königsstuhl ist ein neues Zentrum für astronomische Bildungs- und Öffentlichkeitsarbeit in Heidelberg eröffnet. Das Haus der Astronomie ist eine gemeinsame Einrichtung der Max-Planck-Gesellschaft (MPG) und der Klaus Tschira Stiftung unter Beteiligung der Stadt Heidelberg und der Ruperto Carola, deren Zentrum für Astronomie eng mit dem HdA zusammenarbeitet. Ziel des HdA ist es, astronomische Forschung einer breiten Öffentlichkeit in verständlicher Fo...

  9. Emotionalitätsmarker in Kommentaren auf der PEGIDA-Facebook-Seite

    Hintze, Sonja

    2015-01-01

    Das Thema Zuwanderung löst in der Bevölkerung eine Reihe von unterschiedlichen Emotionen aus. Eine politische Bewegung, die unter anderem aufgrund ihrer ablehnenden Haltung gegenüber Zuwanderung in den Medien sehr präsent ist, ist PEGIDA (Patriotischen Europäer gegen die Islamisierung des Abendlandes). PEGIDA ist wie aus dem Nichts im Oktober 2014 in Dresden auf der politischen Bildfläche erschienen und gewann schnell an Zuwachs. Nach einem kurzen Einbruch der Anhängerzahlen nimmt die Zahl de...

  10. Einfluss der Etch-and-Rinse-Technik auf Adper Easy Bond

    Kunstmann, Thorsten

    2011-01-01

    Ziel der vorliegenden Studie war es die Auswirkungen der Etch-and-Rinse-Technik auf die Randqualität von Kompositfüllungen bei Anwendung des selbstätzenden Bondingsystems Adper Easy Bond zu untersuchen. An 64 extrahierten menschlichen Molaren wurden tiefe Klasse-II-Kavitäten präpariert, deren approximale Begrenzung unterhalb der Schmelz-Zement-Grenze lag. Diese wurden in acht Gruppen aufgeteilt, jeweils mit 8 Zähnen pro Gruppe, und mittels verschiedener Bonding-Techniken mit Kompositfüllungen...

  11. Randzonenveränderung beim Bohren und ihre Auswirkung auf Folgebearbeitungsverfahren

    Schmier, Marcus

    2004-01-01

    In der Praxis kommt es bei der spanenden Bearbeitung immer wieder zu großen Standwegunterschieden identischer Werkzeuge bei vordergründig identischen Bearbeitungsrandbedingungen. Insbesondere bei Fertigungsschritten, die das Bohren als Vorbearbeitung erfordern, kommt es gelegentlich zu atypischen Verschleißerscheinungen, die auf das Entstehen einer Neuhärtezone an der Werkstückoberfläche beim Bohren zurückgeführt werden. Grundsätzlich sind Randzonenveränderungen eine Folge der mechanischen un...

  12. Einfluss repetitiver postprandialer Hyperglykämien auf den kardialen Ischämie- und Reperfusionsschaden

    Elbing, Inka Lena

    2008-01-01

    Die vorliegende Arbeit befasste sich daher mit dem Effekt von Acarbose auf die durch Ischämie und Reperfusion verursachten myokardialen Schäden nach Saccharosebelastung bei gesunden Mäusen in vivo. Aus den Ergebnissen dieser Arbeit lässt sich ableiten, dass eine wiederholte postprandiale Hyperglykämie bei nicht - diabetischen Tieren ausreicht, um die durch Ischämie und Reperfusion verursachten Myokardschäden signifikant zu erhöhen. Dies kann durch eine Behandlung mit dem a - Glucosidase - Hem...

  13. Changes in structure of the short-range order of the InP melt when heated

    Glazov, V.M.; Dovletov, K.; Nashel'skij, A.Ya.; Mamedov, M.M.

    1977-01-01

    An investigation of the temperature dependence of the InP viscosity has indicated an ''after-melting'' effect similar to that observed in other A 3 V 5 compounds having a sphalerite structure. The termodynamic parameters of the viscous flow of indium phosphide melt have been calculated, and a suggestion has been made on the loosening of the short-range order structure of the melt during the period preceding solidification. With the similarity in the behaviour of InP and of A 3 Sb compound melts as a basis, a suggestion has been put forward that the influence of the thermal dissociation upon the character of the changes in the short-range order structure directly after transition from the solid to the liquid phase is negligible

  14. Seeded growth of InP and InAs quantum rods using indium acetate and myristic acid

    Shweky, Itzhak; Aharoni, Assaf; Mokari, Taleb; Rothenberg, Eli; Nadler, Moshe; Popov, Inna; Banin, Uri

    2006-01-01

    A synthesis of soluble III-V semiconductor quantum rods using gold nanoparticles to direct and catalyze one-dimensional growth is developed. The growth takes place via the solution-liquid-solid (SLS) mechanism where proper precursors are injected into a coordinating solvent. We report the synthesis of InP nanorods using indium acetate and myristic acid with gold nanoparticles as the catalysts in the SLS growth mode. A similar route was successfully developed for the growth of InAs nanorods. We find that the amount of Au catalyst in the reaction is an important parameter to achieve shape control. Transmission electron microscope (TEM) images of InP and InAs nanocrystals revealed that the crystals are mostly rod-shaped, and provide strong evidence for Au presence in one edge. The rods were characterized structurally using X-ray diffraction and high-resolution TEM and optically by absorption and photoluminescence

  15. Regrowth of InP by MOVPE on dry-etched heterostructures of InP-GaInAsP

    Catana, A. (IBM Research Div., Zurich Research Lab., Rueschlikon (Switzerland)); Broom, R.F. (IBM Research Div., Zurich Research Lab., Rueschlikon (Switzerland)); Germann, R. (IBM Research Div., Zurich Research Lab., Rueschlikon (Switzerland)); Roentgen, P. (IBM Research Div., Zurich Research Lab., Rueschlikon (Switzerland))

    1993-04-01

    The MOVPE growth behavior of InP on masked and dry-etched ridges in InP/InGaAsP heterostructures grown on (001)-oriented InP substrates has been studied by scanning electron and transmission electron microscopy. It is found that the orientation of the ridges is critical for obtaining good planarization. For ridges oriented along the 100 direction, the growth is uniform and defect-free, leasing to a plane surface. In the orthogonal 110 direction 60 twins are nucleated adjacent to the walls of the ridge. The resultant high density of (111)/(001) facets enhances the growth rate in these regions, leading to projecting walls at the sides of the ridge. (orig.)

  16. Valence-band splitting energies in wurtzite InP nanowires: Photoluminescence spectroscopy and ab initio calculations

    Gadret, E. G.; Dias, G. O.; Dacal, L. C. O.; de Lima, M. M., Jr.; Ruffo, C. V. R. S.; Iikawa, F.; Brasil, M. J. S. P.; Chiaramonte, T.; Cotta, M. A.; Tizei, L. H. G.; Ugarte, D.; Cantarero, A.

    2010-09-01

    We investigated experimentally and theoretically the valence-band structure of wurtzite InP nanowires. The wurtzite phase, which usually is not stable for III-V phosphide compounds, has been observed in InP nanowires. We present results on the electronic properties of these nanowires using the photoluminescence excitation technique. Spectra from an ensemble of nanowires show three clear absorption edges separated by 44 meV and 143 meV, respectively. The band edges are attributed to excitonic absorptions involving three distinct valence-bands labeled: A, B, and C. Theoretical results based on “ab initio” calculation gives corresponding valence-band energy separations of 50 meV and 200 meV, respectively, which are in good agreement with the experimental results.

  17. Role of electrode metallization in the performance of bulk semi-insulating InP radiation detectors

    Zatko, B.; Dubecky, F.; Prochazkova, O.; Necas, V.

    2007-01-01

    This work deals with the study of three different electrode metallizations with the aim to form a Schottky barrier contact. Electrode geometry corresponds to the requirements of digital radiography systems. As substrates bulk Liquid Encapsulated Czochralski (LEC) SI InP wafers doped with Fe and Fe+Zn are used. Results of this study show that no one of the used metallization performs as a blocking contact. However, detectors with Ti/Pt/Au metallization attained a relatively good energy resolution of 7.0 keV in full-width at half-maximum (FWHM) and the charge collection efficiency (CCE) higher than 83% for 122 keV γ-photons at 255 K. The development of SI InP radiation detectors and in particular their electrode technology is discussed in the light of observed results

  18. Optical properties of ion-implanted InP and GaAs: Selectivity-excited photoluminescence spectra

    Makita, Yunosuke; Yamada, Akimasa; Kimura, Shinji; Niki, Shigeru; Yoshinaga, Hiroshi; Matsumori, Tokue; Iida, Tsutomu; Uekusa, Ichiro

    1993-01-01

    Implantation of Mg+ ions was carried out into high purity InP grown by liquid encapsulated Czochralski method. Mg+ ion-implanted InP presented the formation of plural novel emissions with increasing Mg concentration, [Mg] in the low temperature photoluminescence spectra. Selectively-excited photoluminescence (SPL) measurements were made to examine the features of two-hole replicas pertinent to the emissions of excitons bound to neutral Mg and residual Zn acceptors. Systematic variation of the emission intensities from the two types of two-hole replicas was found to be utilized for the evaluation of ion-implanted materials. The significant discrepancy of emission spectra between PL and SPL was attributed to the difference of the depth examined by using the excitation light with high and low absorption coefficient. The results revealed that the diffusion of ion-implanted Mg is extremely enhanced when [Mg] exceeds 1x10 17 cm -3

  19. Molecular beam epitaxial growth and characterization of zinc-blende ZnMgSe on InP (001)

    Sohel, Mohammad; Munoz, Martin; Tamargo, Maria C.

    2004-01-01

    High crystalline quality zinc-blende structure Zn (1-x) Mg x Se epitaxial layers were grown on InP (001) substrates by molecular beam epitaxy. Their band gap energies were determined as a function of Mg concentration and a linear dependence was observed. The band gap of the Zn (1-x) Mg x Se closely lattice matched to InP was found to be 3.59 eV at 77 K and the extrapolated value for zinc-blende MgSe was determined to be 3.74 eV. Quantum wells of Zn (1-x) Cd x Se with Zn (1-x) Mg x Se as the barrier layer were grown which exhibit near ultraviolet emission

  20. Wavelength tuning of InAs quantum dots grown on InP (100) by chemical-beam epitaxy

    Gong, Q.; Noetzel, R.; Veldhoven, P.J. van; Eijkemans, T.J.; Wolter, J.H.

    2004-01-01

    We report on an effective way to continuously tune the emission wavelength of InAs quantum dots (QDs) grown on InP (100) by chemical-beam epitaxy. The InAs QD layer is embedded in a GaInAsP layer lattice matched to InP. With an ultrathin GaAs layer inserted between the InAs QD layer and the GaInAsP buffer, the peak wavelength from the InAs QDs can be continuously tuned from above 1.6 μm down to 1.5 μm at room temperature. The major role of the thin GaAs layer is to greatly suppress the As/P exchange during the deposition of InAs and subsequent growth interruption under arsenic flux, as well as to consume the segregated surface In layer floating on the GaInAsP buffer layer

  1. Nondestructive evaluation of differently doped InP wafers by time-resolved four-wave mixing technique

    Kadys, A.; Sudzius, M.; Jarasiunas, K.; Mao Luhong; Sun Niefeng

    2006-01-01

    Photoelectric properties of semi-insulating, differently doped, and undoped indium phosphide wafers, grown by the liquid encapsulation Czochralski method, have been investigated by time-resolved picosecond four-wave mixing technique. Deep defect related carrier generation, recombination, and transport properties were investigated experimentally by measuring four-wave mixing kinetics and exposure characteristics. The presence of deep donor states in undoped InP was confirmed by a pronounced effect of a space charge electric field to carrier transport. On the other hand, the recharging dynamics of electrically active residual impurities was observed in undoped and Fe-doped InP through the process of efficient trapping of excess carriers. The bipolar diffusion coefficients and mobilities were determined for the all wafers

  2. Optimum third harmonic generation efficiency in the far infrared in Si, GaAs and InP

    Brazis, R.; Raguotis, R.; Siegrist, M.R.

    1997-12-01

    We investigate by means of a Monte Carlo technique the nonlinear drift response of electrons to high power electromagnetic waves in Si, GaAs and InP. The first and third harmonic drift velocity amplitudes and phases are presented as function of the pumping wave frequency in the range of 200 to 500 GHz. The third harmonic generation efficiency is found to reach a maximum at a pumping wave amplitude of 10-25 kV/cm depending on the material and the lattice temperature. Cooling down to liquid nitrogen temperature results in an improvement of the efficiency by a factor of 2 to 10, depending on the material and the pumping wave amplitude. Cooled GaAs and InP are both an order of magnitude more efficient than Si at ambient temperature, for which to date the best measured performance has been reported. (author) 2 figs., 5 refs

  3. Ein Märtyrer auf der Zugspitze? Glühbirnenkreuze, Bildpropaganda und andere Medialisierungen des Totenkults um Albert Leo Schlageter in der Weimarer Republik und im Nationalsozialismus

    Fuhrmeister, Christian

    2004-01-01

    Der Beitrag vergleicht die Grundzüge des Totenkults um Albert Leo Schlageter in der Weimarer Republik und im Nationalsozialismus. Der Fokus der Untersuchung liegt auf dem Medieneinsatz, der den nationalsozialistischen Märtyrerkult vom Totengedenken in der Weimarer Republik unterscheidet. Die verschiedenen Ebenen der Medialisierung werden abschließend an einem konkreten Fallbeispiel, dem Schlageter-Gedenken auf der Zugspitze, demonstriert.

  4. Characterization of ion-irradiation-induced nanodot structures on InP surfaces by atom probe tomography.

    Gnaser, Hubert; Radny, Tobias

    2015-12-01

    Surfaces of InP were bombarded by 1.9 keV Ar(+) ions under normal incidence. The total accumulated ion fluence the samples were exposed to was varied from 1 × 10(17) cm(-2) to 3 × 10(18)cm(-2) and ion flux densities f of (0.4-2) × 10(14) cm(-2) s(-1) were used. Nanodot structures were found to evolve on the surface from these ion irradiations, their dimensions however, depend on the specific bombardment conditions. The resulting surface morphology was examined by atomic force microscopy (AFM). As a function of ion fluence, the mean radius, height, and spacing of the dots can be fitted by power-law dependences. In order to determine possible local compositional changes in these nanostructures induced by ion impact, selected samples were prepared for atom probe tomography (APT). The results indicate that by APT the composition of individual InP nanodots evolving under ion bombardment could be examined with atomic spatial resolution. At the InP surface, the values of the In/P concentration ratio are distinctly higher over a distance of ~1 nm and amount to 1.3-1.8. However, several aspects critical for the analyses were identified: (i) because of the small dimensions of these nanostructures a successful tip preparation proved very challenging. (ii) The elemental compositions obtained from APT were found to be influenced pronouncedly by the laser pulse energy; typically, low energies result in the correct stoichiometry whereas high ones lead to an inhomogeneous evaporation from the tips and deviations from the nominal composition. (iii) Depending again on the laser energy, a prolific emission of Pn cluster ions was observed, with n ≤ 11. Copyright © 2015. Published by Elsevier B.V.

  5. Influence of Yb AND Yb2O3 addition on the properties of InP layers

    Procházková, Olga; Grym, Jan; Zavadil, Jiří; Žďánský, Karel; Lorinčík, Jan

    2008-01-01

    Roč. 10, č. 12 (2008), s. 3261-3264 ISSN 1454-4164 R&D Projects: GA ČR GA102/06/0153; GA ČR(CZ) GP102/08/P617 Institutional research plan: CEZ:AV0Z20670512 Keywords : semiconductor technology * rare earth elements * InP Subject RIV: JA - Electronics ; Optoelectronics, Electrical Engineering Impact factor: 0.577, year: 2008

  6. Growth of thermal oxide layers on GaAs and InP in the presence of ammonium heptamolybdate

    Mittova, I.Ya.; Lavrushina, S.S.; Afonchikova, A.V.

    2004-01-01

    Processes of thermal oxidation of GaAs and InP in the presence of ammonium heptamolybdate were studied using the methods of X-ray fluorescence analysis and IR spectroscopy at temperatures 480-580 Deg C. It was ascertained that introduction of the activator into the system results in accelerated growth of layers on semiconductors due to participation of anionic component of the chemostimulator in oxidation processes. The activator is integrated into the salts formed [ru

  7. Experimental works in plasma developed in INPE (Brazil). 1. Double plasma machine for longitudinal wave study. 2. Plasma centrifuge

    Ferreira, J.L.; Ludwig, G.O.; Del Bosco, E.

    1982-01-01

    This work describes some experiments done at the Plasma Physics Laboratory at INPE. In the first part, the double plasma machine used for the study of ion acoustic wave propagation is described, and the results obtained so far are shown. The second part consists in the description of a plasma centrifuge project. It contains some basic parameters of our apparatus used for isotope separation, throuth electromagtnetic rotation of the plasma. (Author) [pt

  8. Correlations for damage in diffused-junction InP solar cells induced by electron and proton irradiation

    Yamaguchi, M.; Takamoto, T.; Taylor, S.J.; Walters, R.J.; Summers, G.P.; Flood, D.J.; Ohmori, M.

    1997-01-01

    The damage to diffused-junction n + -p InP solar cells induced by electron and proton irradiations over a wide range of energy from 0.5 to 3 MeV and 0.015 to 20 MeV, respectively, has been examined. The experimental electron and proton damage coefficients have been analyzed in terms of displacement damage dose, which is the product of the particle fluence and the calculated nonionizing energy loss [G. P. Summers, E. A. Burke, R. Shapiro, S. R. Messenger, and R. J. Walters, IEEE Trans. Nucl. Sci. 40, 1300 (1993).] Degradation of InP cells due to irradiation with electrons and protons with energies of more than 0.5 MeV show a single curve as a function of displacement damage dose. Based on the deep-level transient spectroscopy analysis, damage equivalence between electron and proton irradiation is discussed. InP solar cells are confirmed to be substantially more radiation resistant than Si and GaAs-on-Ge cells. copyright 1997 American Institute of Physics

  9. Photoluminescence properties of ZnO films grown on InP by thermally oxidizing metallic Zn films

    Chen, S J; Zhang, J Y; Lu, Y M; Shen, D Z; Fan, X W

    2003-01-01

    Photoluminescence (PL) properties of ZnO films grown on (001) InP substrates by thermal oxidization of metallic Zn films, in which oxygen vacancies and interstitial Zn ions are compensated by P ions diffusing from (001) InP substrates, are investigated. X-ray diffraction spectra indicate that P ions have diffused into the Zn films and chemically combined with Zn ions to form Zn sub 3 P sub 2. Intense free exciton emission dominates the PL spectra of ZnO films with very weak deep-level emission. Low-temperature PL spectra at 79 K are dominated by neutral-donor bound exciton emission at 3.299 eV (I sub 4) with a linewidth of 17.3 meV and neutral-acceptor bound exciton emission at 3.264 eV. The free exciton emission increases with increasing temperature and eventually dominates the emission spectrum for temperature higher than 170 K. Furthermore, the visible emission around 2.3 eV correlated with oxygen deficiencies and interstitial Zn defects was quenched to a remarkable degree by P diffusing from InP substrate...

  10. Effect of sulphur-doping on the formation of deep centers in n-type InP under irradiation

    Kol'chenko, T.I.; Lomako, V.M.; Moroz, S.E.

    1988-01-01

    Effect of sulfur-doping on the efficiency of electron trap formation in InP under irradiation was studied using deep level capacity nonstationary spectroscopy method (DLCNS). Structures with Schottky barrier based on epitaxial InP films with ∼10μm thickness (n 0 =8x10 14 -6x10 17 cm -3 ) were irradiated with 60 Co γ-quanta at 40 deg C; the particle flux intensity made up ∼10 12 cm -2 xs -1 . Experimental results presented allow one to conclude that InP doping with sulfur up to n 0 =6x10 17 cm -3 in contrast to the case of silicon doping does not produce a notable effect on the electron trap formation efficiency under irradiation. The observed reduction of configuration-bistable M-center introduction rate in samples with n 0 >10 16 cm -3 is explained by the change of filling of E c -0.12 eV level belonging to unknown X defect

  11. Selective Epitaxy of InP on Si and Rectification in Graphene/InP/Si Hybrid Structure.

    Niu, Gang; Capellini, Giovanni; Hatami, Fariba; Di Bartolomeo, Antonio; Niermann, Tore; Hussein, Emad Hameed; Schubert, Markus Andreas; Krause, Hans-Michael; Zaumseil, Peter; Skibitzki, Oliver; Lupina, Grzegorz; Masselink, William Ted; Lehmann, Michael; Xie, Ya-Hong; Schroeder, Thomas

    2016-10-12

    The epitaxial integration of highly heterogeneous material systems with silicon (Si) is a central topic in (opto-)electronics owing to device applications. InP could open new avenues for the realization of novel devices such as high-mobility transistors in next-generation CMOS or efficient lasers in Si photonics circuitry. However, the InP/Si heteroepitaxy is highly challenging due to the lattice (∼8%), thermal expansion mismatch (∼84%), and the different lattice symmetries. Here, we demonstrate the growth of InP nanocrystals showing high structural quality and excellent optoelectronic properties on Si. Our CMOS-compatible innovative approach exploits the selective epitaxy of InP nanocrystals on Si nanometric seeds obtained by the opening of lattice-arranged Si nanotips embedded in a SiO 2 matrix. A graphene/InP/Si-tip heterostructure was realized on obtained materials, revealing rectifying behavior and promising photodetection. This work presents a significant advance toward the monolithic integration of graphene/III-V based hybrid devices onto the mainstream Si technology platform.

  12. Photoluminescence properties of ZnO films grown on InP by thermally oxidizing metallic Zn films

    Chen, S J; Liu, Y C; Zhang, J Y; Lu, Y M; Shen, D Z; Fan, X W

    2003-01-01

    Photoluminescence (PL) properties of ZnO films grown on (001) InP substrates by thermal oxidization of metallic Zn films, in which oxygen vacancies and interstitial Zn ions are compensated by P ions diffusing from (001) InP substrates, are investigated. X-ray diffraction spectra indicate that P ions have diffused into the Zn films and chemically combined with Zn ions to form Zn 3 P 2 . Intense free exciton emission dominates the PL spectra of ZnO films with very weak deep-level emission. Low-temperature PL spectra at 79 K are dominated by neutral-donor bound exciton emission at 3.299 eV (I 4 ) with a linewidth of 17.3 meV and neutral-acceptor bound exciton emission at 3.264 eV. The free exciton emission increases with increasing temperature and eventually dominates the emission spectrum for temperature higher than 170 K. Furthermore, the visible emission around 2.3 eV correlated with oxygen deficiencies and interstitial Zn defects was quenched to a remarkable degree by P diffusing from InP substrates

  13. Electronic properties of GaAs, InAs and InP nanowires studied by terahertz spectroscopy

    Joyce, Hannah J; Docherty, Callum J; Lloyd-Hughes, James; Herz, Laura M; Johnston, Michael B; Gao Qiang; Tan, H Hoe; Jagadish, Chennupati

    2013-01-01

    We have performed a comparative study of ultrafast charge carrier dynamics in a range of III–V nanowires using optical pump–terahertz probe spectroscopy. This versatile technique allows measurement of important parameters for device applications, including carrier lifetimes, surface recombination velocities, carrier mobilities and donor doping levels. GaAs, InAs and InP nanowires of varying diameters were measured. For all samples, the electronic response was dominated by a pronounced surface plasmon mode. Of the three nanowire materials, InAs nanowires exhibited the highest electron mobilities of 6000 cm 2 V −1 s −1 , which highlights their potential for high mobility applications, such as field effect transistors. InP nanowires exhibited the longest carrier lifetimes and the lowest surface recombination velocity of 170 cm s −1 . This very low surface recombination velocity makes InP nanowires suitable for applications where carrier lifetime is crucial, such as in photovoltaics. In contrast, the carrier lifetimes in GaAs nanowires were extremely short, of the order of picoseconds, due to the high surface recombination velocity, which was measured as 5.4 × 10 5   cm s −1 . These findings will assist in the choice of nanowires for different applications, and identify the challenges in producing nanowires suitable for future electronic and optoelectronic devices. (paper)

  14. A positron annihilation study of compensation defects responsible for conduction-type conversions in LEC-grown InP

    Shan, Y.Y.; Ling, C.C.; Fung, S.; Beling, C.D.; Zhao, Y.W.

    2001-01-01

    Positron annihilation techniques have been employed to investigate the formation of vacancy type of compensation defects in undoped LEC-grown InP. N-type InP becomes p-type semiconducting by short time annealing at 700 C, and then turns to be n-type again after further annealing but with a much higher resistivity. Positron lifetime measurements show that the positron average lifetime τ av increases to a high value of 247ps for the first n-type to p-type conversion and decreases to 240ps for the following p-type to n-type conversion. τ av increases slightly and saturates at 242ps upon further annealing. The results of positron annihilation Doppler-broadening measurements are consistent with the positron lifetime measurements. The correlation between the characteristics of positron annihilation and the conversions of conduction type indicates that the formation of vacancy type defects and the progressive variation of their concentrations during annealing are critical to the electrical properties of the bulk InP material. (orig.)

  15. Velocity auto-correlation and hot-electron diffusion constant in GaAs and InP

    Deb Roy, M.

    1982-01-01

    Auto-correlation functions of the fluctuations in the electron velocities transverse and parallel to the applied electric field are calculated by the Monte Carlo method for GaAs and InP at three different values of field strength which are around three times the threshold field for negative differential mobility in each case. From these the frequency-dependent diffusion coefficients transverse and parallel to the applied field and the figure of merit for noise performance when used in a microwave amplifying device are determined. The results indicate that the transverse auto-correlation function Csub(t)(s) falls nearly exponentially to zero with increasing interval s while the parallel function Csub(p)(s) falls sharply, attains a minimum and then rises towards zero. In each case a higher field gives a higher rate of fall and makes the correlation functions zero within a shorter interval. The transverses diffusion coefficient falls monotonically with the frequency but the parallel diffusion coefficient generally starts with a low value at low frequencies, rises to a maximum and then falls. InP, with a larger separation between the central and the satellite valleys, has a higher value of the low frequency transverse diffusion coefficient and a lower value of its parallel counterpart. The noise performance of microwave semiconductor amplifying devices depends mainly on the low frequency parallel diffusion constant and consequently devices made out of materials like InP with a large separation between valleys are likely to have better noise characteristics. (orig.)

  16. Medien und Berufsvorstellungen von Kindern: eine experimentelle Studie zum Einfluss von Kinderbüchern auf das Berufsspektrum von Kindergartenkindern

    Brüggemann, Tim; Gehrau, Volker; Handrup, Jutta

    2015-01-01

    "Der Beitrag thematisiert zunächst den Stand der beruflichen Orientierung von Jugendlichen sowie die pädagogischen Bemühungen beim Übergang Schule-Beruf, insbesondere im Hinblick auf eine Erweiterung des häufig engen Spektrums von Berufen, die bei der Berufswahl berücksichtig werden. Dabei richten sich die Bestrebungen, diesem Problem entgegenzuwirken, bislang vor allem auf Jugendliche. Anschließend wird anhand vorliegender Ergebnisse aus der Medienforschung diskutiert, in welcher Weise Masse...

  17. Impacts from electric railway operation on the power supply system characteristic; Einfluss des elektrischen Bahnbetriebs auf das Tagesbelastungsdiagramm der Energieversorgung

    Bogdanov, C. [Militaerhochschule fuer Verkehr ``Todor Kableshkov``, Sofia (Bulgaria)

    1995-12-31

    Some characteristic figures are derived from daily load diagrams of electric railways, analized and compared with those of public power supply load diagram, especially with regard to sharing in base - medium - peak load and in day - night times, and optimizations are proposed. (orig.) [Deutsch] Fuer die Tagesbelastungsdiagramme elektrischer Bahnen werden einige Kennziffern gebildet, analysiert und mit denen des Tagesbelastungsdiagramms der Landesenergieversorgung verglichen, insbesondere hinsichtlich der Verteilung des Bahnenergiebedarfs auf Grund-, Mittel- und Spitzenlast sowie auf die verschiedenen Tages- und Nachtzeitzonen. Daraus werden Optimierungsvorschlaege abgeleitet. (orig.)

  18. Review: Eine Replik auf: Schmitt, Rudolf (2011. Review Essay: Rekonstruktive und andere Metaphernanalysen

    Jan Kruse

    2012-03-01

    Full Text Available udolf SCHMITT ist unbestreitbar ein fundierter Experte im deutschsprachigen Raum im Hinblick auf eine umfassende und fokussierte Metaphernanalyse als ein spezifisches Verfahren der Analyse qualitativer Daten. Mit seiner in FQS erschienenen Rezension zu unserem Buch "Metaphernanalyse. Ein rekonstruktiver Ansatz" wird dies abermals deutlich. SCHMITT ordnet unser Verfahren zur rekonstruktiven Metaphernanalyse in andere sozialwissenschaftliche Metaphernanalysen ein und versucht auf dieser Grundlage, Vor- und Nachteile unseres metaphernanalytischen Zugangs hervorzuheben. Ausgehend von diesem Vergleichshorizont gelingt ihm die Besprechung eines grundlegenden Buches zur Einführung in die sozialwissenschaftliche Metaphernanalyse – welches unser Buch aber weder ist noch vorgibt zu sein. Wir begrüßen seine breit gefächerte Auswahl sozialwissenschaftlicher metaphernanalytischer Zugänge, glauben aber, dass die Zielsetzungen unseres Ansatzes (und unseres Buches in seinem Review-Essay zu sehr in den Hintergrund treten. Wir haben uns daher zu dieser Replik entschlossen, um die "sozialwissenschaftliche Metaphernanalyse" weiter in einem diskursiven Prozess zu halten. URN: http://nbn-resolving.de/urn:nbn:de:0114-fqs1202102

  19. Actively controlled current collector; Aktiv geregelter Stromabnehmer. Innovation fuer den schnellen Verkehr auf konventionellen Strecken

    Mueller, C.

    2003-07-01

    Deutsche Bahn is presently endeavouring to further improve the interaction between the overhead wire and the current collectors on its locomotives and trainsets. The major factors behind this initiative are cost, quality and noise prevention. The outcome is the development of a completely new type of current collector for high-speed operation even on conventional track. Prototypes have meanwhile undergone practical trials on the 200 km/h line from Augsburg to Donauwoerth. The new current collector is a single-arm pantograph jointly developed by DB and Bombardier Transportation. (orig.) [German] Die Deutsche Bahn versucht derzeit, das Zusammenspiel von Oberleitung und den Stromabnehmern ihrer Lokomotiven und Triebzuege weiter zu verbessern. Kosten, Qualitaet und Laermschutz sind dabei die wesentlichen Gruende. Sie haben zur Entwicklung eines voellig neuen Stromabnehmer-Typus speziell fuer den Hochgeschwindigkeitsverkehr auch auf konventionellen Strecken gefuehrt. Auf der Tempo-200-Strecke von Augsburg nach Donauwoerth absolvierten jetzt Prototypen erste Praxis-Tests. Es handelt sich um aktiv geregelte, akustisch optimierte Einholmstromabnehmer, gemeinsam entwickelt von DB und Bombardier Transportation. (orig.)

  20. Der Einfluss von rechtsgerichtetem Autoritarismus und sozialer Dominanzorientierung auf homophobe Einstellungen

    Sarah Andrejewski

    2016-06-01

    Full Text Available Das Thema Homophobie geriet seit 2012 verstärkt in das Interesse der Medien. Ursachen waren u.a. die Erlassung homophober Gesetze in Russland, Outings von prominenten Persönlichkeiten wie Fußballspieler und Politiker oder die in Frankreich auftretenden Massendemonstrationen zur Verhinderung der gleichgeschlechtlichen Ehe. Durch das kürzlich stattfindende Attentat in einem beliebten Club der LGBT-Community in Orlando ist das Thema präsenter denn je. Neben Untersuchungen, die aufdecken, welchen Vorurteilen Menschen mit einer homosexuellen Ausrichtung ausgesetzt sind und wie sich diese im Alltag der Betroffenen niederschlagen, suchen vermehrt Studien nach den Gründen dieser Vorurteile. Die vorliegende Arbeit bedient sich dazu etablierter Konzepte aus der Vorurteilsforschung, um diese in einen Zusammenhang mit homophoben Einstellungen und Verhaltensweisen zu bringen. Mithilfe einer Online-Befragung von 249 heterosexuellen Teilnehmern wurde der Einfluss von rechtsgerichteten Autoritarismus (RWA, sozialer Dominanzorientierung (SDO und sozialer Identität (SI auf homophobe Einstellungen ermittelt. Es konnte nachgewiesen werden, dass die untersuchten Variablen negativ auf die Einstellungen der Untersuchungsteilnehmer gegenüber Schwulen und Lesben wirken. Gleichzeitig wurde die Mediatorrolle der sozialen Identität als Identifikation mit der eigenen heterosexuellen Orientierung getestet und nachgewiesen, dass diese als Mediator zwischen RWA, SDO und homophoben Einstellungen fungiert.

  1. Applications of cerebral MRI in neonatology; MRT bei Neugeborenen mit Verdacht auf zerebrale Stoerung

    Prayer, D. [Universitaetsklinik fuer Radiodiagnostik, Wien (Austria). Abt. fuer Neuroradiologie; Kuhle, S. [Universitaetsklinik fuer Kinder- und Jugendheilkunde, Wien (Austria). Abt. fuer Neonatologie, angeborene Stoerungen und Intensivmedizin; Blaicher, W. [Abt. fuer Frauenheilkunde und Praenatale Diagnostik, Wien (Germany)

    2000-01-01

    Magnetic resonance tomography (MRT) has become the most important method in the workup of infantile cerebral complications after primary sonography. Cerebral MR examination and image interpretation during the infantile period require extensive knowledge of morphological manifestations, their pathophysiological background, and frequency. The choice of imaging parameters and image interpretation is demonstrated in infarctions and hemorrhages of the mature and immature brain. A review of the main differential diagnoses is also given. The relevance of MR spectroscopy and fetal MRI is discussed. (orig.) [German] Zur Abklaerung zerebraler Veraenderungen bei Neugeborenen hat sich die Magnetresonanztomographie (MRT) als wichtigste weiterfuehrende Methode nach der Sonographie entwickelt. Die Durchfuehrung und Auswertung der MR-Untersuchungen erfordern jedoch eine genaue Kenntnis der morphologischen Manifestation, des pathophysiologischen Hintergrunds und der Haeufigkeit bestimmter zerebraler Komplikationen in diesem Lebensalter. Resuemee: Ausgehend von zerebrovaskulaeren Erkrankungen werden diese Fragen behandelt, wobei sowohl auf die Auswahl der adaequaten Untersuchungsparameter als auch auf die Bildinterpretation und die wichtigsten Differentialdiagnosen eingegangen wird. Die Bedeutung von MR-Spektroskopie und fetaler MRT wird diskutiert. (orig.)

  2. Pediatric radiological diagnostics in suspected child abuse; Kinderradiologische Diagnostik bei Verdacht auf Kindesmisshandlung

    Erfurt, C.; Schmidt, U. [Technische Universitaet Dresden, Institut fuer Rechtsmedizin, Medizinische Fakultaet, Dresden (Germany); Hahn, G. [Universitaetsklinikum Carl Gustav Carus, Dresden, Abteilung Kinderradiologie, Institut und Poliklinik fuer Radiologische Diagnostik, Dresden (Germany); Roesner, D. [Universitaetsklinikum Carl Gustav Carus, Dresden, Klinik und Poliklinik fuer Kinderchirurgie, Dresden (Germany)

    2009-10-15

    Advanced and specialized radiological diagnostics are essential in the case of clinical suspicion of pediatric injuries to the head, thorax, abdomen, and extremities when there is no case history or when ''battered child syndrome'' is assumed on the basis of inadequate trauma. In particular, the aim of this sophisticated diagnostic procedure is the detection of lesions of the central nervous system (CNS) in order to initiate prompt medical treatment. If diagnostic imaging shows typical findings of child abuse, accurate documented evidence of the diagnostic results is required to prevent further endangerment of the child's welfare. (orig.) [German] Klinisch diagnostizierte Verletzungen an Kopf, Thorax, Abdomen oder Extremitaeten eines Kindes bei scheinbar leerer Anamnese oder Angabe eines inadaequaten Traumas erfordern beim Verdacht auf ein Battered-Child-Syndrom eine erweiterte und spezialisierte radiologische Diagnostik. Diese soll insbesondere im Bereich des ZNS Verletzungsfolgen erfassen, um therapeutische Massnahmen einleiten zu koennen. Bei typischen, auf eine Misshandlung hinweisenden radiologischen Befunden ist eine praezise beweissichere Befunddokumentation erforderlich, um eine weitere Kindeswohlgefaehrdung zu vermeiden. (orig.)

  3. A 311-GHz Fundamental Oscillator Using InP HBT Technology

    Gaier, Todd; Fung, King Man; Samoska, Lorene; Radisic, Vesna; Sawdai, Donald; Scott, Dennis; Deal, W.R.

    2010-01-01

    This oscillator uses a single-emitter 0.3- m InP heterojunction bipolar transistor (HBT) device with maximum frequency of oscillation (fmax) greater than 500 GHz. Due to high conductor and substrate losses at submillimeterwave frequencies, a primary challenge is to efficiently use the intrinsic device gain. This was done by using a suitable transmission-line media and circuit topology. The passive components of the oscillator are realized in a twometal process with benzocyclobutene (BCB) used as the primary transmission line dielectric. The circuit was designed using microstrip transmission lines. The oscillator is implemented in a common-base topology due to its inherent instability, and the design includes an on-chip resonator, outputmatching circuitry, and an injection-locking port, the port being used to demonstrate the injection-locking prin ciple. A free-running frequency of 311.6 GHz has been measured by down-converting the signal. Ad di tionally, injection locking has been successfully demonstrated with up to 17.8 dB of injection-locking gain. The injection-locking reference signal is generated using a 2 20 GHz frequency synthesizer, followed by a doubler, active tripler, a W-band amplifier, and then a passive tripler. Therefore, the source frequency is multiplied 18 times to obtain a signal above 300 GHz that can be used to injection lock the oscillator. Measurement shows that injection locking has improved the phase noise of the oscillator and can be also used for synchronizing a series of oscillators. A signal conductor is implemented near the BCP -InP interface and the topside of the BCB layer is fully metallized as a signal ground. Because the fields are primarily constrained in the lower permittivity BCB region, this type of transmission line is referred to as an inverted microstrip. In addition, both common-emitter and commonbase circuits were investigated to determine optimum topology for oscillator design. The common -base topology required smaller

  4. Study of dielectric relaxation and AC conductivity of InP:S single crystal

    El-Nahass, M. M.; Ali, H. A. M.; El-Shazly, E. A.

    2012-07-01

    The dielectric relaxation and AC conductivity of InP:S single crystal were studied in the frequency range from 100 to 5.25 × 105 Hz and in the temperature range from 296 to 455 K. The dependence of the dielectric constant (ɛ1) and the dielectric loss (ɛ2) on both frequency and temperature was investigated. Since no peak was observed on the dielectric loss, we used a method based on the electric modulus to evaluate the activation energy of the dielectric relaxation. Scaling of the electric modulus spectra showed that the charge transport dynamics is independent of temperature. The AC conductivity (σAC) was found to obey the power law: Aωs. Analysis of the AC conductivity data and the frequency exponent showed that the correlated barrier hopping (CBH) model is the dominant mechanism for the AC conduction. The variation of AC conductivity with temperature at different frequencies showed that σAC is a thermally activated process.

  5. The InP - SiO2 interface: Electron tunneling into oxide traps

    Prasad, S.J.; Owen, S.J.T.

    1985-01-01

    Indium Phosphide is an attractive material for high-speed devices. Though many successful devices have been built and demonstrated, InP MISFET's still suffer from drain current drift. From the data current drift measurements, the shift in the threshold voltage ΔV was computed for different times. It was found that a linear relationship exists between √ΔV and log(t). When a positive bias-stress was applied to the gate of an MIS capacitor for a time t, the C-V cure shifted by an amount ΔV and again, a linear relationship was observed between √ΔV and log(t). This was verified on four different gate insulators: pyrolytic SiO 2 at 320 0 C and 360 0 C, plasma oxide at 300 0 C and photo CVD oxide at 225 0 C. These results can only be explained by a model in which electrons tunnel from the substrate into oxide traps

  6. An ab initio study of the polytypism in InP

    Dacal, Luis C. O.; Cantarero, A.

    2016-09-01

    The existence of polytypism in semiconductor nanostructures gives rise to the appearance of stacking faults which many times can be treated as quantum wells. In some cases, despite of a careful growth, the polytypism can be hardly avoided. In this work, we perform an ab initio study of zincblende stacking faults in a wurtzite InP system, using the supercell approach and taking the limit of low density of narrow stacking faults regions. Our results confirm the type II band alignment between the phases, producing a reliable qualitative description of the band gap evolution along the growth axis. These results show an spacial asymmetry in the zincblende quantum wells, that is expected due to the fact that the wurtzite stacking sequence (ABAB) is part of the zincblende one (ABCABC), but with an unexpected asymmetry between the valence and the conduction bands. We also present results for the complex dielectric function, clearly showing the influence of the stacking on the homostructure values and surprisingly proving that the correspondent bulk results can be used to reproduce the polytypism even in the limit we considered.

  7. Photophysics of size-selected InP nanocrystals: Exciton recombination kinetics

    Kim, S.; Wolters, R.H.; Heath, J.R.

    1996-01-01

    We report here on the size-dependent kinetics of exciton recombination in a III endash V quantum dot system, InP. The measurements reported include various frequency dependent quantum yields as a function of temperature, frequency dependent luminescence decay curves, and time-gated emission spectra. This data is fit to a three-state quantum model which has been previously utilized to explain photophysical phenomena in II endash VI quantum dots. The initial photoexcitation is assumed to place an electron in a (delocalized) bulk conduction band state. Activation barriers for trapping and detrapping of the electron to surface states, as well as activation barriers for surface-state radiationless relaxation processes are measured as a function of particle size. The energy barrier to detrapping is found to be the major factor limiting room temperature band-edge luminescence. This barrier increases with decreasing particle size. For 30 A particles, this barrier is found to be greater than 6 kJ/mol emdash a barrier which is more than an order of magnitude larger than that previously found for 32 A CdS nanocrystals. copyright 1996 American Institute of Physics

  8. Direct observation of microtwin formation at crack tips in InP

    Vanderschaeve, G.; Caillard, D.; Peyrade, J.P.

    1992-01-01

    This paper reports that in brittle materials which contain cracks, stress concentrations arise at crack tips. At low temperatures, when the load is increased, brittle fracture happens for a critical stress intensity factor, which is an intrinsic material property, depending on the loading mode and on the cleavage plane. At higher temperatures dislocations may be emitted at the crack tip: a plastic zone is formed, which releases the stresses and increases the critical load for crack propagation. It is generally accepted that the brittle-to ductile transition is controlled directly or indirectly by dislocation mobility. During the course of an in situ transmission electron microscopy, study of dislocation mobility in the III-V compound InP, we have observed the nucleation at a crack tip and the propagation of partial dislocations of same Burgers vectors, resulting in a microtwinning of the crystal. Such an observation provides information on both the way stress relaxation occurs and the relative mobilities of the partial dislocations in this material. In spite of the importance of twin formation on the quality of the material used as substrate in semiconducting devices, this last point is rather poorly documented

  9. Phosphazene like film formation on InP in liquid ammonia (223 K)

    Gonçalves, A.-M., E-mail: goncalves@chimie.uvsq.fr; Njel, C.; Mathieu, C.; Aureau, D.; Etcheberry, A.

    2013-07-01

    An anodic photo-galvanostatic treatment at low current density (1 μA·cm{sup −2}) is carried out on n-InP semiconductor in liquid ammonia (223 K). The gradual chemical evolution of the surface is studied as a function of the anodic charge. Proof and reproducibility of the chemical transformation of the surface are clearly evidenced by X-ray photoelectron spectroscopy (XPS) analyses. Like by cyclic voltammetry, the perfect coverage of the InP surface by a thin phosphazene like film is also revealed by XPS data. However, a low anodic charge (≈ 0.5 mC·cm{sup −2}) is required by photo-galvanostatic treatment while a higher anodic charge (≈ 7 mC·cm{sup −2}) is involved by cyclic voltammetry. The excess of charge could be related to ammonia oxidation during the formation of the passivating film. This result proves the electrochemical oxidation of the solvent as a determinant step of the mechanism film formation. - Highlights: ► Cyclic voltammetry and galvanostatic modes on n-InP in liquid ammonia (223 K). ► A thin film growth is reached by photo-anodic polarization. ► The same phosphazene like film is evidenced by X-ray photoelectron spectroscopy. ► An excess of charge is observed by cyclic voltammetry. ► An electrochemical oxidation step of the solvent is assumed.

  10. Integrated InP frequency discriminator for Phase-modulated microwave photonic links.

    Fandiño, J S; Doménech, J D; Muñoz, P; Capmany, J

    2013-02-11

    We report the design, fabrication and characterization of an integrated frequency discriminator on InP technology for microwave photonic phase modulated links. The optical chip is, to the best of our knowledge, the first reported in an active platform and the first to include the optical detectors. The discriminator, designed as a linear filter in intensity, features preliminary SFDR values the range between 67 and 79 dB.Hz(2/3) for signal frequencies in the range of 5-9 GHz limited, in principle, by the high value of the optical losses arising from the use of several free space coupling devices in our experimental setup. As discussed, these losses can be readily reduced by the use of integrated spot-size converters improving the SFDR by 17.3 dB (84-96 dB.Hz(2/3)). Further increase up to a range of (104-116 dB.Hz(2/3)) is possible by reducing the system noise eliminating the EDFA employed in the setup and using a commercially available laser source providing higher output power and lower relative intensity noise. Other paths for improvement requiring a filter redesign to be linear in the optical field are also discussed.

  11. Der Einfluss von Tests auf Studienleistung und Leistung [The Effects of Tests on Study Behavior and Performance

    Dirkx, Kim; Kester, Liesbeth; Kirschner, Paul A.

    2012-01-01

    Dirkx, K. J. H., Kester, L., & Kirschner, P. A. (2012, 24 September). Der Einfluss von Tests auf Studienverhalten und Leistung [The Effects of Study Behavior and Performance]. Presentation at the Leibniz Institute for Pedagogies in Sciences and Mathematics (IPN), Kiel, Germany.

  12. Policy Challenges Related to Biofuel Development in Tanzania Politische Herausforderungen in Bezug auf Biokraftstoffe in Tansania

    Hussein Sosovele

    2010-01-01

    Full Text Available Biofuels have recently emerged as a major issue in energy policy, agricultural development and natural resource management. The growing demand for biofuels is being driven by high oil prices, energy security concerns and global climate change. In Tanzania there is growing interest on the part of foreign private investors in establishing biofuel projects, although globally there are concerns related to biofuel investments. Tanzania has approved a number of such projects, but the biofuel subsector faces several policy challenges that could clearly hamper its development. These include the lack of a holistic and comprehensive energy policy that addresses the broad spectrum of energy options and issues, and weak or absent institutional and legal frameworks. This article highlights some key policy issues critical to the development of biofuels and argues that if these challenges are not addressed at the national policy level, biofuel development may not result in the expected benefits to Tanzania and the majority of its local communities. Biokraftstoffe sind in jüngster Zeit in den Bereichen Energiepolitik, Landwirtschaftsentwicklung und nationales Ressourcenmanagement zu einem wichtigen Thema geworden. Die wachsende Nachfrage nach Biokraftstoffen wird durch die hohen Ölpreise, Befürchtungen in Bezug auf Energiesicherheit und den globalen Klimawandel vorangetrieben. In Tansania ist wachsendes Interesse ausländischer Privatinvestoren an Biokraftstoffprojekten zu beobachten, obwohl es weltweit Bedenken gegenüber solchen Investitionen gibt. Die tansanische Regierung hat einer ganzen Reihe entsprechender Projekte zugestimmt, doch mit dem Biokraftstoffsektor sind politische Herausforderungen verbunden, die diese Entwicklung behindern könnten. Dazu gehören das Fehlen einer ganzheitlichen und umfassenden Energiepolitik, die das ganze Spektrum energiepolitischer Fragestellungen und Optionen einschließt, wie auch schwache oder fehlende institutionelle

  13. Models for settlement prediction of structures in opencast dumps; Modelle zur Setzungsprognose von Bauwerken auf Tagebaukippen

    Birle, E.; Vogt, S. [Technische Univ. Muenchen (Germany). Zentrum Geotechnik

    2016-05-01

    For construction projects at opencast dumps e.g. for planning of traffic routes or individual buildings a prognosis of dump subsicence after the establishment of the structures is required. It should be noted that on dump surfaces time-dependent subsidence are observed which can change by construction activities at the dump surface. As tools for describing the dump subsidence phenomenological models that have been developed based on the evaluation of dump characteristic subsidence and allow a one-dimensional analysis of creep deformation and visco-elastoplastic material models within the finite element method for analyzing complex geometric boundary conditions. [German] Fuer Baumassnahmen auf Tagebaukippen beispielsweise zur Planung von Verkehrswegen oder einzelnen Bauwerken ist eine Prognose der Kippensetzungen nach Errichtung der Bauwerke erforderlich. Dabei ist zu beachten, dass auf Kippenoberflaechen ausgepraegte zeitabhaengige Setzungen beobachtet werden, die sich durch Baumassnahmen an der Kippenoberflaeche aendern koennen. Als Werkzeuge zur Beschreibung der Kippensetzungen stehen prinzipiell phaenomenologische Modelle, die auf Basis der Auswertung von Kippeneigensetzungen entwickelt wurden und die eine ein-dimensionale Analyse der Kriechverformungen zulassen sowie visko-elastoplastische Stoffmodelle im Rahmen der FiniteElemente- Methode zur Analyse komplexer geometrischer Randbedingungen zur Verfuegung. In Abhaengigkeit vom Randwertproblem ist zu entscheiden, welches der Modelle zur Beschreibung der Kippensetzungen heranzuziehen ist. Mit phaenomenologischen Kriechmodellen und einer ein-dimensionalen Analyse der Verformungen koennen die sich nach Ende der Verkippung einstellenden Kippensetzungen in der Regel genuegend genau beschrieben werden, sofern an der Kippenoberflaeche keine signifikanten Spannungsaenderungen infolge von Baumassnahmen eingetragen werden. Kommt es dagegen zu Spannungsaenderungen, beispielsweise durch die Errichtung eines hohen

  14. Investigation of the open-circuit voltage in wide-bandgap InGaP-host InP quantum dot intermediate-band solar cells

    Aihara, Taketo; Tayagaki, Takeshi; Nagato, Yuki; Okano, Yoshinobu; Sugaya, Takeyoshi

    2018-04-01

    To analyze the open-circuit voltage (V oc) in intermediate-band solar cells, we investigated the current-voltage characteristics in wide-bandgap InGaP-based InP quantum dot (QD) solar cells. From the temperature dependence of the current-voltage curves, we show that the V oc in InP QD solar cells increases with decreasing temperature. We use a simple diode model to extract V oc at the zero-temperature limit, V 0, and the temperature coefficient C of the solar cells. Our results show that, while the C of InP QD solar cells is slightly larger than that of the reference InGaP solar cells, V 0 significantly decreases and coincides with the bandgap energy of the InP QDs rather than that of the InGaP host. This V 0 indicates that the V oc reduction in the InP QD solar cells is primarily caused by the breaking of the Fermi energy separation between the QDs and the host semiconductor in intermediate-band solar cells, rather than by enhanced carrier recombination.

  15. Impact of P/In flux ratio and epilayer thickness on faceting for nanoscale selective area growth of InP by molecular beam epitaxy.

    Fahed, M; Desplanque, L; Coinon, C; Troadec, D; Wallart, X

    2015-07-24

    The impact of the P/In flux ratio and the deposited thickness on the faceting of InP nanostructures selectively grown by molecular beam epitaxy (MBE) is reported. Homoepitaxial growth of InP is performed inside 200 nm wide stripe openings oriented either along a [110] or [1-10] azimuth in a 10 nm thick SiO2 film deposited on an InP(001) substrate. When varying the P/In flux ratio, no major shape differences are observed for [1-10]-oriented apertures. On the other hand, the InP nanostructure cross sections strongly evolve for [110]-oriented apertures for which (111)B facets are more prominent and (001) ones shrink for large P/In flux ratio values. These results show that the growth conditions allow tailoring the nanocrystal shape. They are discussed in the framework of the equilibrium crystal shape model using existing theoretical calculations of the surface energies of different low-index InP surfaces as a function of the phosphorus chemical potential, directly related to the P/In ratio. Experimental observations strongly suggest that the relative (111)A surface energy is probably smaller than the calculated value. We also discuss the evolution of the nanostructure shape with the InP-deposited thickness.

  16. Self-Catalyzed Growth and Characterization of In(As)P Nanowires on InP(111)B Using Metal-Organic Chemical Vapor Deposition.

    Park, Jeung Hun; Pozuelo, Marta; Setiawan, Bunga P D; Chung, Choong-Heui

    2016-12-01

    We report the growth of vertical -oriented InAs x P1-x (0.11 ≤ x ≤ 0.27) nanowires via metal-organic chemical vapor deposition in the presence of indium droplets as catalysts on InP(111)B substrates at 375 °C. Trimethylindium, tertiarybutylphosphine, and tertiarybutylarsine are used as the precursors, corresponding to P/In and As/In molar ratios of 29 and 0.01, respectively. The as-grown nanowire growth morphologies, crystallinity, composition, and optical characteristics are determined using a combination of scanning and transmission electron microscopies, electron diffraction, and X-ray photoelectron, energy dispersive X-ray, and Raman spectroscopies. We find that the InAs x P1-x nanowires are tapered with narrow tops, wider bases, and In-rich In-As alloy tips, characteristic of vapor-liquid-solid process. The wires exhibit a mixture of zinc blende and wurtzite crystal structures and a high density of structural defects such as stacking faults and twins. Our results suggest that the incorporation of As into InP wires decreases with increasing substrate temperature. The Raman spectra obtained from the In(As)P nanowires reveal a red-shift and lower intensity of longitudinal optical mode relative to both InP nanowires and InP(111)B bulk, due to the incorporation of As into the InP matrix.

  17. Thermal conductivity of InAs quantum dot stacks using AlAs strain compensating layers on InP substrate

    Salman, S.; Folliot, H.; Le Pouliquen, J.; Chevalier, N.; Rohel, T.; Paranthoën, C.; Bertru, N.; Labbé, C.; Letoublon, A.; Le Corre, A.

    2012-01-01

    Highlights: ► The thermal conductivity of InAs on InP (1 1 3)B quantum dots stacks is measured. ► The growth of a close stack of 100 layers of InAs using AlAs strain compensating layers is presented. ► New data on the thermal conductivity of InP n-doped susbtrate are given. - Abstract: The growth and thermal conductivity of InAs quantum dot (QD) stacks embedded in GaInAs matrix with AlAs compensating layers deposited on (1 1 3)B InP substrate are presented. The effect of the strain compensating AlAs layer is demonstrated through Atomic Force Microscopy (AFM) and X-ray diffraction structural analysis. The thermal conductivity (2.7 W/m K at 300 K) measured by the 3ω method reveals to be clearly reduced in comparison with a bulk InGaAs layer (5 W/m K). In addition, the thermal conductivity measurements of S doped InP substrates and the SiN insulating layer used in the 3ω method in the 20–200 °C range are also presented. An empirical law is proposed for the S doped InP substrate, which slightly differs from previously presented results.

  18. The influence of pressure on the birefringence in semiconductor compounds ZnS, CuGaS2, and InPS4

    Lavrentyev, A.A.; Gabrelian, B.V.; Kulagin, B.B.; Nikiforov, I.Ya.; Sobolev, V.V.

    2007-01-01

    Using the modified method of augmented plane waves and the code WIEN2k the calculations of the electron band structure, densities of electron states, and imaginary part of dielectric response function were carried out for different polarization of the vector of electrical field ε xx and ε zz for the semiconductor compounds ZnS, CuGaS 2 , and InPS 4 . The calculations were performed both for undisturbed crystals and for distorted crystals due to the applied pressure. The compounds studied have the similar crystallographic structures: ZnS - sphalerite, CuGaS 2 - chalcopyrite, and InPS 4 - twice defective chalcopyrite. It is known, that in cubic ZnS there is no birefringence, whereas in CuGaS 2 and InPS 4 there is one. But CuGaS 2 has so called isotropic point (where ε xx =ε zz ) in the visible optical range, and InPS 4 has no such point. Our calculations of ε xx and ε zz have shown that in ZnS under the pressure the isotropic points arise, but in InPS 4 they do not exist. (copyright 2007 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  19. Evolution of ordered one-dimensional and two-dimensional InAs/InP quantum dot arrays on patterned InP (1 0 0) and (3 1 1)B substrates by self-organized anisotropic strain engineering

    Sritirawisarn, N.; Wera, J.L.E.; Otten, van F.W.M.; Nötzel, R.

    2010-01-01

    The formation of ordered InAs/InP quantum dot (QD) arrays is demonstrated on patterned InP (1 0 0) and (3 1 1)B substrates by the concept of self-organized anisotropic strain engineering in chemical beam epitaxy (CBE). On shallow- and deep stripe-patterned InP (1 0 0) substrates, depending on the

  20. Quantenphysik und Kommunikationswissenschaft auf dem Weg zu einer allgemeinen Theorie der Kommunikation

    Hamberger, Erich

    2015-01-01

    Der Quantenphysiker Herbert Pietschmann beschäftigt sich seit Jahrzehnten mit dem Phänomen Kommunikation. Der Kommunikationswissenschaftler Erich Hamberger setzt sich seit langem mit der Frage der Adaptierung erkenntnistheoretischer Einsichten der Quantentheorie für die Geistes- und Biowissenschaften auseinander. 2003 begegnen sich die beiden - und staunen über die „verschränkten Erkenntnisinteressen“. 2006 bestreiten sie eine erste gemeinsame universitäre Lehrveranstaltung. 2011 folgt Das Phänomen Kommunikation transdisziplinär betrachtet. Aus ihrer Zusammenarbeit ist dieses Buch entstanden. Naturwissenschaft arbeitet auf der Grundlage des mechanistischen Denkrahmens. Die bisher einzige Ausnahme ist die Quantenphysik. Weder Leben noch Kommunikation ist mittels des mechanistischen Denkrahmens zu verstehen. Auch der Denkrahmen der Quantenphysik reicht dazu nicht aus. Der Bedarf nach adäquatem Denken im Bereich der Kommunikation kann durch quantenphysikalisches Denken NICHT befriedigt werden, jedoc...

  1. Driver's glance behaviour and secondary tasks; Einfluss von Nebenaufgaben auf das Fahrerblickverhalten

    Schweigert, M. [BMW Group Forschung und Technik, Muenchen (Germany); Bubb, H. [TU Muenchen, Garching (Germany). Lehrstuhl fuer Ergonomie

    2003-07-01

    This paper contains a proposal for the evaluation of drivers' glance behavior, focussing on the influence of secondary tasks during driving. In general, an evaluation can only be achieved by regarding the quality of a task completion, which can be calculated by a comparison of a measured, actual value or behavior and a defined target value or behavior. Due to this definition, a target glance behavior is defined by so called continous and situational visual tasks. As opposed to continuous visual tasks, situational visual tasks contain a concrete description for a target glance behavior. A field trial (N=30) showed, that the subjects' glance behavior fulfilled most of the defined visual tasks when driving without a secondary task. Driving with secondary tasks leads to an increasing subjects' reliance on the correct driving of the other road users, shown by decreasing visual monitoring. (orig.) [German] Die vorliegende Untersuchung behandelt die Bewertung des Blickverhaltens von Fahrzeugfuehrern, wobei das Hauptaugenmerk auf dem Einfluss von Zusatzaufgaben liegt, die waehrend der Fahrt zu bearbeiten sind. Eine Bewertung ist immer eng mit dem Begriff der Qualitaet verknuepft, wobei ein Ist-Wert mit einem vorgegebenen Soll-Wert zu vergleichen ist. Nur wenn die Abweichung zwischen Soll und Ist gering ist, ist die Qualitaet hoch und die Bewertung somit positiv. Bei der Definition eines Soll-Blickverhaltens wird hier zwischen kontinuierlichen und situativen visuellen Aufgaben unterschieden. Letztere beinhalten konkrete Forderungen an das Fahrerblickverhalten in bestimmten Situationen, waehrend sich die Vorgabe eines Soll-Werts fuer kontinuierliche Aufgaben einer genauen Quantifizierung weitestgehend entzieht. Im Feldversuch (N=30) konnte gezeigt werden, dass bei den Fahrten ohne Zusatzaufgabenbearbeitung (Referenzbedingung) die definierten visuellen Aufgaben zum Grossteil erfuellt werden. Ist der Fahrer jedoch durch Zusatzaufgaben beansprucht, verlaesst er

  2. Effects of surface states on device and interconnect isolation in GaAs MESFET and InP MISFET integrated circuits

    Hasegawa, H.; Kitagawa, T.; Masuda, H.; Yano, H.; Ohno, H.

    1985-01-01

    Surface electrical breakdown and side-gating which cause failure of device and interconnect isolation are investigated for GaAs MESFET and InP MISFET integrated circuit structures. Striking differences in behavior are observed between GaAs and InP as regards to the surface conduction, surface breakdown and side-gating. These differences are shown to be related to the surface state properties of the insulator-semiconductor interface. In GaAs, high density of surface states rather than bulk trap states control the surface I-V characteristics and side-gating, causing serious premature avalanche breakdown and triggering side-gating at a low nominal field intensity of 1-3 kV/cm. On the other hand, InP MISFET integrated circuits are virtually free from these premature breakdown and side-gating effect under normal dark operating condition because of very low surface state density

  3. Optical properties of InxGa1-xP/InP grown at high fluence Ga+ implantation on InP using focused ion beam

    Fang, Hsin-Chiao; Liu, Chuan-Pu; Dhara, Sandip

    2011-01-01

    Single-crystalline InP(1 0 0) substrate was implanted by 30 keV Ga + ions with fluences of 1 x 10 16 -1.5 x 10 17 cm -2 followed by post-annealing treatment at 750 o C to recover implantation-induced structural defects and activate dopants into the lattices. The optical property, composition, and microstructure of the Ga + -implanted InP were studied by Raman spectroscopy and transmission electron microscopy (TEM). Raman spectra show that the In x Ga 1-x P phase is formed at a critical fluence of 7 x 10 16 cm -2 . The newly grown phase was identified with the appearance of Ga rich TO InP and In rich TO GaP modes of a random alloy in the 1 bond-2 phonon mode configuration along with TEM structural identification.

  4. Electronic band structure calculations for GaxIn1−xASyP1−y alloys lattice matched to InP

    Bechiri, A; Benmakhlouf, F; Allouache, H; Bacha, S; Bouarissa, N

    2012-01-01

    A pseudopotential formalism coupled with the virtual crystal approximation are applied to study the effect of compositional disorder upon electronic band structure of cubic Ga x In 1−x As y P 1−y quarternary alloys lattice matched to InP. The effects of compositional variations are properly included in the calculations. Very good agreement is obtained between the calculated values and the available experimental data for the lattice–matched alloy to InP. The absorption at the fundamental optical gaps is found to be direct within a whole range of the y composition whatever the lattice-matching to the substrate of interest. The alloy system Ga x In 1−x As y P 1−y lattice matched to InP is suggested to be suitable for an efficient light emitting device (ELED) material.

  5. Growth and anisotropic transport properties of self-assembled InAs nanostructures in InP

    Bierwagen, O.

    2007-01-01

    Self-assembled InAs nanostructures in InP, comprising quantum wells, quantum wires, and quantum dots, are studied in terms of their formation and properties. In particular, the structural, optical, and anisotropic transport properties of the nanostructures are investigated. The focus is a comprehending exploration of the anisotropic in-plane transport in large ensembles of laterally coupled InAs nanostructures. The self-assembled Stranski-Krastanov growth of InAs nanostructures is studied by gas-source molecular beam epitaxy on both nominally oriented and vicinal InP(001). Optical polarization of the interband transitions arising from the nanostructure type is demonstrated by photoluminescence and transmission spectroscopy. The experimentally convenient four-contact van der Pauw Hall measurement of rectangularly shaped semiconductors, usually applied to isotropic systems, is extended to yield the anisotropic transport properties. Temperature dependent transport measurements are performed in large ensembles of laterally closely spaced nanostructures. The transport of quantum wire-, quantum dash- and quantum dot containing samples is highly anisotropic with the principal axes of conductivity aligned to the directions. The direction of higher mobility is [ anti 110], which is parallel to the direction of the quantum wires. In extreme cases, the anisotropies exceed 30 for electrons, and 100 for holes. The extreme anisotropy for holes is due to diffusive transport through extended states in the [ anti 110], and hopping transport through laterally localized states in the [110] direction, within the same sample. A novel 5-terminal electronic switching device based on gate-controlled transport anisotropy is proposed. The gate-control of the transport anisotropy in modulation-doped, self-organized InAs quantum wires embedded in InP is demonstrated. (orig.)

  6. Thin-Film Solar Cells with InP Absorber Layers Directly Grown on Nonepitaxial Metal Substrates

    Zheng, Maxwell

    2015-08-25

    The design and performance of solar cells based on InP grown by the nonepitaxial thin-film vapor-liquid-solid (TF-VLS) growth technique is investigated. The cell structure consists of a Mo back contact, p-InP absorber layer, n-TiO2 electron selective contact, and indium tin oxide transparent top electrode. An ex situ p-doping process for TF-VLS grown InP is introduced. Properties of the cells such as optoelectronic uniformity and electrical behavior of grain boundaries are examined. The power conversion efficiency of first generation cells reaches 12.1% under simulated 1 sun illumination with open-circuit voltage (VOC) of 692 mV, short-circuit current (JSC) of 26.9 mA cm-2, and fill factor (FF) of 65%. The FF of the cell is limited by the series resistances in the device, including the top contact, which can be mitigated in the future through device optimization. The highest measured VOC under 1 sun is 692 mV, which approaches the optically implied VOC of ≈795 mV extracted from the luminescence yield of p-InP. The design and performance of solar cells based on indium phosphide (InP) grown by the nonepitaxial thin-film vapor-liquid-solid growth technique is investigated. The cell structure consists of a Mo back contact, p-InP absorber layer, n-TiO2 electron selective contact, and an indium tin oxide transparent top electrode. The highest measured open circuit voltage (VOC) under 1 sun is 692 mV, which approaches the optically implied VOC of ≈795 mV extracted from the luminescence yield of p-InP.

  7. Performance, Defect Behavior and Carrier Enhancement in Low Energy, Proton Irradiated p(+)nn(+) InP Solar Cells

    Weinberg, I.; Rybicki, G. C.; Vargas-Aburto, C.; Jain, R. K.; Scheiman, D.

    1994-01-01

    InP p(+)nn(+) cells, processed by MOCVD, were irradiated by 0.2 MeV protons and their performance and defect behavior observed to a maximum fluence of 10(exp 13)/sq cm. Their radiation induced degradation, over this fluence range, was considerably+less than observed for similarly irradiated, diffused junction n p InP cells. Significant degradation occurred in both the cell's emitter and base regions the least degradation occurring in the depletion region. A significant increase in series resistance occurs at the highest fluenc.e. Two majority carrier defect levels, E7 and E10, are observed by DLTS with activation energies at (E(sub C) - 0.39)eV and (E(sub C) - 0.74)eV respectively. The relative concentration of these defects differs considerably from that observed after 1 MeV electron irradiation. An increased carrier concentration in the cell's n-region was observed at the highest proton fluence, the change in carrier concentration being insignificant at the lower fluences. In agreement with previous results, for 1 and 1.5 MeV electron irradiated InP p(+)n junctions, the defect level E10 is attributed to a complex between zinc, diffused into the n-region from the zinc doped emitter, and a radiation induced defect. The latter is assumed to be either a phosphorus vacancy or interstitial. The increased, or enhanced carrier concentration is attributed to this complex acting as a donor.

  8. Growth and anisotropic transport properties of self-assembled InAs nanostructures in InP

    Bierwagen, O.

    2007-12-20

    Self-assembled InAs nanostructures in InP, comprising quantum wells, quantum wires, and quantum dots, are studied in terms of their formation and properties. In particular, the structural, optical, and anisotropic transport properties of the nanostructures are investigated. The focus is a comprehending exploration of the anisotropic in-plane transport in large ensembles of laterally coupled InAs nanostructures. The self-assembled Stranski-Krastanov growth of InAs nanostructures is studied by gas-source molecular beam epitaxy on both nominally oriented and vicinal InP(001). Optical polarization of the interband transitions arising from the nanostructure type is demonstrated by photoluminescence and transmission spectroscopy. The experimentally convenient four-contact van der Pauw Hall measurement of rectangularly shaped semiconductors, usually applied to isotropic systems, is extended to yield the anisotropic transport properties. Temperature dependent transport measurements are performed in large ensembles of laterally closely spaced nanostructures. The transport of quantum wire-, quantum dash- and quantum dot containing samples is highly anisotropic with the principal axes of conductivity aligned to the <110> directions. The direction of higher mobility is [ anti 110], which is parallel to the direction of the quantum wires. In extreme cases, the anisotropies exceed 30 for electrons, and 100 for holes. The extreme anisotropy for holes is due to diffusive transport through extended states in the [ anti 110], and hopping transport through laterally localized states in the [110] direction, within the same sample. A novel 5-terminal electronic switching device based on gate-controlled transport anisotropy is proposed. The gate-control of the transport anisotropy in modulation-doped, self-organized InAs quantum wires embedded in InP is demonstrated. (orig.)

  9. Large-signal modeling of multi-finger InP DHBT devices at millimeter-wave frequencies

    Johansen, Tom Keinicke; Midili, Virginio; Squartecchia, Michele

    2017-01-01

    A large-signal modeling approach has been developed for multi-finger devices fabricated in an Indium Phosphide (InP) Double Heterojunction Bipolar Transistor (DHBT) process. The approach utilizes unit-finger device models embedded in a multi-port parasitic network. The unit-finger model is based...... on an improved UCSD HBT model formulation avoiding an erroneous RciCbci transit-time contribution from the intrinsic collector region as found in other III-V based HBT models. The mutual heating between fingers is modeled by a thermal coupling network with parameters extracted from electro-thermal simulations...

  10. GaAs FETs and novel heteroepitaxial quaternary lasers grown on InP substrates by organometallic chemical vapor deposition

    Lo, Y.H.; Bhat, R.; Chang-Hasnain, C.; Caneau, C.; Zah, C.E.; Lee, T.P.

    1988-01-01

    This paper reports the GaAs MESFETs and 1.3μm buried hetero-structure lasers with AlGaAs/GaAs lateral confinement layers simultaneously grown by OMCVD and fabricated on InP structures. The 1μm recessed gate MESFET has a transconductance of 220 mS/mm and the novel structured laser has a CW threshold current of 45 mA. The heteroepitaxy technology and devices show great promises for long wavelength opto-electronic integrated circuits

  11. Morphological evolution of InP nano-dots and surface modifications after keV irradiation

    Paramanik, Dipak; Sahu, S N; Varma, Shikha

    2008-01-01

    Evolution and coarsening behaviour of self-assembled nano-dots fabricated on an InP surface by 3 keV Ar ion sputtering have been studied in conjunction with the structural modifications at the surface. The dots have been produced in off-normal geometry but in the absence of rotation. For small sputtering durations, the dots coarsen and agglomerate, up to a critical time t c , while the surface roughens and experiences a tensile stress. A relaxation in this stress is observed after the surface becomes amorphized at t c , beyond which an inverse coarsening, fragmentation of dots and a smoothened surface are observed

  12. Development of III-Sb metamorphic DBR membranes on InP for vertical cavity laser applications

    Addamane, S. J.; Mansoori, A.; Renteria, E. J.; Dawson, N.; Shima, D. M.; Rotter, T. J.; Hains, C. P.; Dawson, L. R.; Balakrishnan, G.

    2016-04-01

    Sb-based metamorphic DBR membranes are developed for InP-based vertical cavity laser applications. The reflectivity of the metamorphic DBR membrane is compared to the reflectivity of a lattice-matched DBR to characterize the optical quality of the DBR membrane. The metamorphic interface between InP and the III-antimonides is found to degrade the reflectivity of the DBR. Therefore, the growth temperature for the metamorphic DBR is optimized in order to obtain highly reflective (>99.8%) III-Sb thin-film membranes.

  13. The effect of nanoscratching direction on the plastic deformation and surface morphology of InP crystals

    Huang, J. Y.; Ponce, F. A. [Department of Physics, Arizona State University, Tempe, Arizona 85287-1504 (United States); Caldas, P. G.; Prioli, R. [Departamento de Física, Pontificia Universidade Católica do Rio de Janeiro, Marques de São Vicente 225, Rio de Janeiro, 22453-900 Rio de Janeiro (Brazil); Almeida, C. M. [Divisão de Metrologia de Materiais, Instituto Nacional de Metrologia, Qualidade e Technología (INMETRO), Duque de Caxias, Rio de Janeiro 25250-020 (Brazil)

    2013-11-28

    The microstructure of (001) InP crystals scratched with a sharp diamond tip depends strongly on the scratching direction. The scratch surface is found to conform to the radius of curvature of the tip (∼60 nm) by the formation of atomic crystal steps produced by dislocation glide along (111) planes. 〈110〉 scratches lead to coherent local crystal lattice movement and rotation causing deep dislocation propagation into the crystal and irregular pileups at the sides of the scratch surface. 〈100〉 scratches lead to incoherent lattice movement causing dislocation locking that inhibits their propagation and results in regular pileups.

  14. Effect of rapid thermal annealing on InP1−xBix grown by molecular beam epitaxy

    Wu, X Y; Wang, K; Pan, W W; Wang, P; Li, Y Y; Song, Y X; Gu, Y; Yue, L; Xu, H; Zhang, Z P; Cui, J; Gong, Q; Wang, S M

    2015-01-01

    The effect of post-growth rapid thermal annealing on structural and optical properties of InP 1−x Bi x thin films was investigated. InPBi shows good thermal stability up to 500 °C and a modest improvement in photoluminescence (PL) intensity with an unchanged PL spectral feature. Bismuth outdiffusion from InPBi and strain relaxation are observed at about 600 °C. The InPBi sample annealed at 800 °C shows an unexpected PL spectrum with different energy transitions. (paper)

  15. Ex-Situ and In-Situ Ellipsometric Studies of the Thermal Oxide on InP

    1990-12-06

    ion---- Distribution/ Availabilit ? Codes£v l llt Codes Avail and/or Dist| Special Abstract The thermally grown InP oxide as etched by an aqueous...aqueous NH4OH/NH4F, and Law(17) has reported observations of orientational ordering of water and organic solvents on pyrex surfaces by in-situ...minutes, followed by a sequence of acetone, deionized water (d. i. water ) rinse. After being dipped in a concentrated aqueous HF solution for 15 seconds

  16. MIMIC-compatible GaAs and InP field effect controlled transferred electron (FECTED) oscillators

    Scheiber, Helmut; Luebke, Kurt; Diskus, Christian G.; Thim, Hartwig W.; Gruetzmacher, D.

    1989-12-01

    A MIMIC-(millimeter and microwave integrated circuit) compatible transferred electron oscillator is investigated which utilizes the frequency-independent negative resistance of the stationary charge dipole domain that forms in the channel of a MESFET. The device structure, analysis, and simulation are described. Devices fabricated from GaAs and InP exhibit very high power levels of 56 mW at 29 GHz and 55 mW at 34 GHz, respectively. Continuous wave power levels are somewhat lower (30 mW).

  17. The Horizontal Ice Nucleation Chamber (HINC): INP measurements at conditions relevant for mixed-phase clouds at the High Altitude Research Station Jungfraujoch

    Lacher, Larissa; Lohmann, Ulrike; Boose, Yvonne; Zipori, Assaf; Herrmann, Erik; Bukowiecki, Nicolas; Steinbacher, Martin; Kanji, Zamin A.

    2017-12-01

    In this work we describe the Horizontal Ice Nucleation Chamber (HINC) as a new instrument to measure ambient ice-nucleating particle (INP) concentrations for conditions relevant to mixed-phase clouds. Laboratory verification and validation experiments confirm the accuracy of the thermodynamic conditions of temperature (T) and relative humidity (RH) in HINC with uncertainties in T of ±0.4 K and in RH with respect to water (RHw) of ±1.5 %, which translates into an uncertainty in RH with respect to ice (RHi) of ±3.0 % at T > 235 K. For further validation of HINC as a field instrument, two measurement campaigns were conducted in winters 2015 and 2016 at the High Altitude Research Station Jungfraujoch (JFJ; Switzerland, 3580 m a. s. l. ) to sample ambient INPs. During winters 2015 and 2016 the site encountered free-tropospheric conditions 92 and 79 % of the time, respectively. We measured INP concentrations at 242 K at water-subsaturated conditions (RHw = 94 %), relevant for the formation of ice clouds, and in the water-supersaturated regime (RHw = 104 %) to represent ice formation occurring under mixed-phase cloud conditions. In winters 2015 and 2016 the median INP concentrations at RHw = 94 % was below the minimum detectable concentration. At RHw = 104 %, INP concentrations were an order of magnitude higher, with median concentrations in winter 2015 of 2.8 per standard liter (std L-1; normalized to standard T of 273 K and pressure, p, of 1013 hPa) and 4.7 std L-1 in winter 2016. The measurements are in agreement with previous winter measurements obtained with the Portable Ice Nucleation Chamber (PINC) of 2.2 std L-1 at the same location. During winter 2015, two events caused the INP concentrations at RHw = 104 % to significantly increase above the campaign average. First, an increase to 72.1 std L-1 was measured during an event influenced by marine air, arriving at the JFJ from the North Sea and the Norwegian Sea. The contribution from anthropogenic or other

  18. Measurement of third-order nonlinear susceptibility tensor in InP using extended Z-scan technique with elliptical polarization

    Oishi, Masaki; Shinozaki, Tomohisa; Hara, Hikaru; Yamamoto, Kazunuki; Matsusue, Toshio; Bando, Hiroyuki

    2018-05-01

    The elliptical polarization dependence of the two-photon absorption coefficient β in InP has been measured by the extended Z-scan technique for thick materials in the wavelength range from 1640 to 1800 nm. The analytical formula of the Z-scan technique has been extended with consideration of multiple reflections. The Z-scan results have been fitted very well by the formula and β has been evaluated accurately. The three independent elements of the third-order nonlinear susceptibility tensor in InP have also been determined accurately from the elliptical polarization dependence of β.

  19. [The Detection of Ultra-Broadband Terahertz Spectroscopy of InP Wafer by Using Coherent Heterodyne Time-Domain Spectrometer].

    Zhang, Liang-liang; Zhang, Rui; Xu, Xiao-yan; Zhang, Cun-lin

    2016-02-01

    Indium Phosphide (InP) has attracted great physical interest because of its unique characteristics and is indispensable to both optical and electronic devices. However, the optical property of InP in the terahertz range (0. 110 THz) has not yet been fully characterized and systematically studied. The former researches about the properties of InP concentrated on the terahertz frequency between 0.1 and 4 THz. The terahertz optical properties of the InP in the range of 4-10 THz are still missing. It is fairly necessary to fully understand its properties in the entire terahertz range, which results in a better utilization as efficient terahertz devices. In this paper, we study the optical properties of undoped (100) InP wafer in the ultra-broad terahertz frequency range (0.5-18 THz) by using air-biased-coherent-detection (ABCD) system, enabling the coherent detection of terahertz wave in gases, which leads to a significant improvement on the dynamic range and sensitivity of the system. The advantage of this method is broad frequency bandwidth from 0.2 up to 18 THz which is only mainly limited by laser pulse duration since it uses ionized air as terahertz emitter and detector instead of using an electric optical crystal or photoconductive antenna. The terahertz pulse passing through the InP wafer is delayed regarding to the reference pulse and has much lower amplitude. In addition, the frequency spectrum amplitude of the terahertz sample signal drops to the noise floor level from 6.7 to 12.1 THz. At the same time InP wafer is opaque at the frequencies spanning from 6.7 to 12.1 THz. In the frequency regions of 0.8-6.7 and 12.1-18 THz it has relativemy low absorption coefficient. Meanwhile, the refractive index increases monotonously in the 0.8-6.7 THz region and 12.1-18 THz region. These findings will contribute to the design of InP based on nonlinear terahertz devices.

  20. Effekte des oxidativen Stresses auf die Expression der Scavenger-Rezeptoren CD36 und SR-BI und des Transkriptionsfaktors PPARγ in Makrophagen

    Westendorf, Thomas

    2006-01-01

    Ziel dieser Dissertationsschrift war es, die Effekte des oxidativen Stresses in Form von oxLDL auf die Expression der atherogenen Scavenger-Rezeptoren CD36, SR-BI, des Transkriptionsfaktors PPARγ und pro-inflammatorischer Zytokine zu untersuchen. Die durchgeführten Untersuchungen beruhen auf der Annahme, dass modifizierte LDL durch Induktion der genannten Scavenger-Rezeptoren und nachfolgende unregulierte Aufnahme in Makrophagen mit Bildung von Schaumzellen entscheidend zur Entwicklung einer ...

  1. Investigations on the effect of creep stress on the thermal properties of metallic materials; Untersuchungen zum Einfluss der Zeitstandbeanspruchung auf die thermischen Eigenschaften metallischer Werkstoffe

    Radtke, U [Univ. Dortmund (Germany); Crostack, H A [Univ. Dortmund (Germany); Winschuh, E [Siemens KWU, Offenbach (Germany)

    1996-12-31

    Using thermal wave analysis with front side infrared detection on sample material damaged by creep, one examines whether the creep stress has an effect on the thermal material properties and to what effect this can be used to estimate the remaining service life. (orig.) [Deutsch] Unter Anwendung der Waermewellenanalyse mit frontseitiger Infrarotdetektion auf zeitstandgeschaedigtes Probenmaterial wird untersucht, ob die Zeitstandbeanspruchung einen Einfluss auf die thermischen Werkstoffeigenschaften hat und inwieweit dieser zur Abschaetzung der Restlebensdauer genutzt werden kann. (orig.)

  2. Hydrogen Passivation of Interstitial Zn Defects in Heteroepitaxial InP Cell Structures and Influence on Device Characteristics

    Ringel, S. A.; Chatterjee, B.

    2004-01-01

    Hydrogen passivation of heteroepitaxial InP solar cells is of recent interest for deactivation of dislocations and other defects caused by the cell/substrate lattice mismatch that currently limit the photovoltaic performance of these devices. In this paper we present strong evidence that, in addition to direct hydrogen-dislocation interactions, hydrogen forms complexes with the high concentration of interstitial Zn defects present within the p(+) Zn-doped emitter of MOCVD-grown heteroepitaxial InP devices, resulting in a dramatic increase of the forward bias turn-on voltage by as much as 280 mV, from 680 mV to 960 mV. This shift is reproducible and thermally reversible and no such effect is observed for either n(+)p structures or homoepitaxial p(+)n structures grown under identical conditions. A combination of photoluminescence (PL), electrochemical C-V dopant profiling, SIMS and I-V measurements were performed on a set of samples having undergone a matrix of hydrogenation and post-hydrogenation annealing conditions to investigate the source of this voltage enhancement and confirm the expected role of interstitial Zn and hydrogen. A precise correlation between all measurements is demonstrated which indicates that Zn interstitials within the p(+) emitter and their interaction with hydrogen are indeed responsible for this device behavior.

  3. In situ monitoring of the surface reconstructions on InP(001) prepared by molecular beam epitaxy

    Ozanyan, K. B.; Parbrook, P. J.; Hopkinson, M.; Whitehouse, C. R.; Sobiesierski, Z.; Westwood, D. I.

    1997-07-01

    Reflection anisotropy spectroscopy (RAS) and reflection high-energy electron diffraction (RHEED) were applied to study clean InP(001) surfaces prepared by molecular beam epitaxy (MBE). At phosphorus beam equivalent pressures (BEPs) between 3.5×10-7 and 3.5×10-6 mbar and substrate temperature (Ts) falling from 590 to 150 °C, (2×4), (2×1), (2×2), and c(4×4) RHEED patterns are observed. The main RAS features, observed at 1.7-1.9 and 2.6-2.9 eV are assigned to In and P dimers, respectively. The above reconstruction sequence is associated closely with transformations identified in RAS signatures that are induced by progressively increasing the P surface coverage. The RAS results also imply the existence of (2×4)α and (2×4)β phases. A surface-phase diagram for MBE-grown (001) InP, in the whole range of Ts and phosphorus BEPs is proposed.

  4. An investigation of the DC and RF performance of InP DHBTs transferred to RF CMOS wafer substrate

    Ren, Kun; Zheng, Jiachen; Lu, Haiyan; Liu, Jun; Wu, Lishu; Zhou, Wenyong; Cheng, Wei

    2018-05-01

    This paper investigated the DC and RF performance of the InP double heterojunction bipolar transistors (DHBTs) transferred to RF CMOS wafer substrate. The measurement results show that the maximum values of the DC current gain of a substrate transferred device had one emitter finger, of 0.8 μm in width and 5 μm in length, are changed unobviously, while the cut-off frequency and the maximum oscillation frequency are decreased from 220 to 171 GHz and from 204 to 154 GHz, respectively. In order to have a detailed insight on the degradation of the RF performance, small-signal models for the InP DHBT before and after substrate transferred are presented and comparably extracted. The extracted results show that the degradation of the RF performance of the device transferred to RF CMOS wafer substrate are mainly caused by the additional introduced substrate parasitics and the increase of the capacitive parasitics induced by the substrate transfer process itself. Project supported by the National Natural Science Foundation of China (No. 61331006) and the Natural Science Foundation of Zhejiang Province (No. Y14F010017).

  5. Selective formation of porous layer on n-type InP by anodic etching combined with scratching

    Seo, Masahiro; Yamaya, Tadafumi

    2005-01-01

    The selective formation of porous layer on n-type InP (001) surface was investigated by using scratching with a diamond scriber followed by anodic etching in deaerated 0.5M HCl. Since the InP specimen was highly doped, the anodic etching proceeded in the dark. The potentiodynamic polarization showed the anodic current shoulder in the potential region between 0.8 and 1.3V (SHE) for the scratched area in addition to the anodic current peak at 1.7V (SHE) for the intact area. The selective formation of porous layer on the scratched are was brought by the anodic etching at a constant potential between 1.0 and 1.2V (SHE) for a certain time. The nucleation and growth of etch pits on intact area, however, took place when the time passed the critical value. The cross section of porous layer on the scratched area perpendicular to the [1-bar 10] or [110] scratching direction had a V-shape, while the cross section of porous layer on the scratched area parallel to the [1-bar 10] or [110] scratching direction had a band structure with stripes oriented to the [1-bar 11] or [11-bar 1] direction. Moreover, nano-scratching at a constant normal force in the micro-Newton range followed by anodic etching showed the possibility for selective formation of porous wire with a nano-meter width

  6. Modulation of electrical properties in Cu/n-type InP Schottky junctions using oxygen plasma treatment

    Kim, Hogyoung; Jung, Chan Yeong; Hyun Kim, Se; Cho, Yunae; Kim, Dong-Wook

    2015-01-01

    Using current–voltage (I–V) measurements, we investigated the effect of oxygen plasma treatment on the temperature-dependent electrical properties of Cu/n-type indium phosphide (InP) Schottky contacts at temperatures in the range 100–300 K. Changes in the electrical parameters were evident below 180 K for the low-plasma-power sample (100 W), which is indicative of the presence of a wider distribution of regions of low barrier height. Modified Richardson plots were used to obtain Richardson constants, which were similar to the theoretical value of 9.4 A cm −2 K −2 for n-type InP. This suggests that, for all the samples, a thermionic emission model including a spatially inhomogeneous Schottky barrier can be used to describe the charge transport phenomena at the metal/semiconductor interface. The voltage dependence of the reverse-bias current revealed that Schottky emission was dominant for the untreated and high-plasma-power (250 W) samples. For the low-plasma-power sample, Poole–Frenkel emission was dominant at low voltages, whereas Schottky emission dominated at higher voltages. Defect states and nonuniformity of the interfacial layer appear to be significant in the reverse-bias charge transport properties of the low-plasma-power sample. (paper)

  7. Comparative study of porosification in InAs, InP, ZnSe and ZnCdS

    Monaico, Eduard; Tiginyanu, Ion; Nielsch, Kornelius; Ursaki, Veaceslav; Colibaba, Gleb; Nedeoglo, Dmitrii; Cojocaru, Ala; Foell Helmut

    2013-01-01

    We report on a comparative study of the pore growth during anodization of a narrow-bandgap III-V compound (InAs), a medium-bandgap III-V one (InP) and wide-bandgap II-VI semiconductors (ZnSe and Zn 0,4 Cd 0,6 S). According to the obtained results, the morphology of the porous layers can be controlled by the composition of the electrolyte and the applied electrochemical parameters. It was evidenced that in the narrow bandgap semiconductor InAs it is difficult to control the mechanism of pore growth. Both current line oriented pores and crystallographically oriented pores were produced in the medium-bandgap material InP. The electrochemical nanostructuring of wide-bandgap semiconductors realized in single crystalline high conductivity samples evidenced only current-line oriented pores. This behavior is explained in terms of difference in the values of electronegativity of the constituent atoms and the degree of ionicity. (authors)

  8. Selective formation of porous layer on n-type InP by anodic etching combined with scratching

    Seo, Masahiro [Graduate School of Engineering, Hokkaido University, Kita-13 Jo, Nishi-8 Chome, Kita-ku, Sapporo 060-8628 (Japan)]. E-mail: seo@elechem1-mc.eng.hokudai.ac.jp; Yamaya, Tadafumi [Graduate School of Engineering, Hokkaido University, Kita-13 Jo, Nishi-8 Chome, Kita-ku, Sapporo 060-8628 (Japan)

    2005-11-10

    The selective formation of porous layer on n-type InP (001) surface was investigated by using scratching with a diamond scriber followed by anodic etching in deaerated 0.5M HCl. Since the InP specimen was highly doped, the anodic etching proceeded in the dark. The potentiodynamic polarization showed the anodic current shoulder in the potential region between 0.8 and 1.3V (SHE) for the scratched area in addition to the anodic current peak at 1.7V (SHE) for the intact area. The selective formation of porous layer on the scratched are was brought by the anodic etching at a constant potential between 1.0 and 1.2V (SHE) for a certain time. The nucleation and growth of etch pits on intact area, however, took place when the time passed the critical value. The cross section of porous layer on the scratched area perpendicular to the [1-bar 10] or [110] scratching direction had a V-shape, while the cross section of porous layer on the scratched area parallel to the [1-bar 10] or [110] scratching direction had a band structure with stripes oriented to the [1-bar 11] or [11-bar 1] direction. Moreover, nano-scratching at a constant normal force in the micro-Newton range followed by anodic etching showed the possibility for selective formation of porous wire with a nano-meter width.

  9. Review: Anja Weiß (2001). Rassismus wider Willen. Ein anderer Blick auf eine Struktur sozialer Ungleichheit

    Bremer, Helmut

    2002-01-01

    Die Arbeit liefert einen Beitrag zur Debatte um Rassismus und Interkulturalität sowie zur Anwendung qualitativer Forschungsverfahren im Rahmen der Theorie BOURDIEUs. Rassismus und Anti-Rassismus werden nicht isoliert betrachtet, sondern als eine Dimension sozialer Ungleichheit, die in eine umfassende Theorie sozialer Ungleichheit eingebunden werden muss. Vorgeschlagen wird BOURDIEUs Konzept von Habitus, Feld und Kapital. Das ermöglicht einen anderen Blick auf das Phänomen. Rassismus reproduzi...

  10. Nationale und transnationale Vernetzung polnischer Städte und Regionen: Auf dem Weg zu einer nachhaltigen Stadt- und Regionalentwicklung

    Dorsch, Pamela

    2003-01-01

    "Die Studie 'Nationale und transnationale Vernetzung polnischer Städte und Regionen - Bedeutung für eine nachhaltige Stadt- und Regionalentwicklung' liefert einen Überblick über die Einbindung polnischer Kommunen und Wojewodschaften in allgemeine und politikfeldspezifische Netzwerke auf nationaler und transnationaler Ebene. Besondere Berücksichtigung findet hierbei die Vernetzung in Fragen von Nachhaltigkeit und des Umweltschutzes. Einführend zeigt die Studie den Prozess zunehmender Dezentral...

  11. Freiwillige Selbstverpflichtung von Unternehmen in Antikorruptionsinitiativen: Der Einfluss des nationalen Kontextes auf internationales Engagement am Beispiel chinesischer und indischer Unternehmen

    Bargstädt, Dorothee

    2017-01-01

    Die Länder China und Indien stehen für den Beginn des "Asian Century". Da den Ländern und ihren nationalen Unternehmen ein starker Einfluss auf wirtschaftliche Entscheidungen der Zukunft bescheinigt wird, rücken Themen wie die gesellschaftliche Verantwortung von Unternehmen in den Fokus. Die vorliegende Arbeit untersucht, ob sich das Engagement von chinesischen und indischen Unternehmen in internationalen Antikorruptionsinitiativen unterscheidet. Dazu werden die CSR-Reports der 30 größten chi...

  12. Entwicklung von Extraktions- und Absorptionssystemen auf Basis ionischer Flüssigkeiten für die Entschwefelung von Kohlenwasserstoffen

    Kuhlmann, Esther

    2008-01-01

    Da die Anforderungen an den Schwefelgehalt der fossilen Brennstoffe - nicht zuletzt durch gesetzliche Richtlinien bezüglich der Schadstoffemissionen - im Laufe der Zeit ständig gestiegen sind, sind effektive Entschwefelungsverfahren für fossile Brennstoffe von hohem Interesse. Die derzeitige Entschwefelungstechnologie basiert auf dem HDS-Verfahren, alternative Verfahren sind aber wünschenswert, insbesondere wenn Anwendungen einen Schwefelgehalt von weit unter 10 ppm erforderlich machen. Daher...

  13. Development of solar selective absorber layers on aluminium. Final report; Entwicklung solarselektiver Absorberschichten auf Aluminium fuer Solarkollektoren. Abschlussbericht

    Hoenicke, D.; Moeller, T.; Schwarz, T.

    1998-01-31

    A new electrolytic process was developed to form solar selective layers on aluminium. In the developed process, both the formation of the alumina layer and the deposition of metals into the layer takes place in only one treatment step using a single electrolysis bath. The main step of the so called ISOC-method (impulse structured oxide ceramic) is the anodic oxidation of aluminium which was carried out by using a pulse technique at different voltages. During the anodic polarisation a thin alumina ceramic layer was formed, while the cathodic led to the metal deposition as copper and nickel. The conditions of the electrolysis were varied in order to estimate optimal parameters achieving solar selective layers with high selectivity. Furthermore, a scale-up of the lab scale apparatus to a mini plant was carried out. Finally, the corrosion resistance of the absorber layers was improved by the formation of a thin hydrophobic overlayer using a sol-gel treatment. (orig.) [Deutsch] Ein neuartiges Behandlungsverfahren zur Erzeugung von solarselektiven Absorberschichten auf Aluminium wurde entwickelt. Bei dieser elektrochemischen Behandlung wird in einem Einstufenprozess mit einem Elektrolyten durch eine Kombination von anodischer Oxidation und bipolarer Pulsbehandlung auf der Oberflaeche des Aluminiums eine impulsstrukturierte Oxidkeramik (ISOK) erzeugt. Dabei entsteht durch eine anodische Oxidation eine strukturierte Aluminiumoxidschicht. Bei der bipolaren Pulsbehandlung erfolgt dann eine Abscheidung der im ISOK-Elektrolyten befindlichen Metalle Cu und Ni auf oder in die Aluminiumoxidoberflaeche. Die ISOK-Behandlung wurde vom Labormassstab zu einem ISOK-Verfahren im Miniplant-Massstab entwickelt. Der Einfluss der elektrischen Parameter und der chemischen Zusammensetzung der ISOK-Elektrolyte wurde untersucht. Durch eine auf das ISOK-Verfahren abgestimmte Nachbehandlung, ein Tauchverfahren in einer Sol-Gel-Loesung, entsteht ein Schichtsystem mit hoher Solarselektivitaet

  14. Auswirkungen eines Intensivtherapie-Programms für verhaltensgestörte Geistigbehinderte auf ihre Bezugspersonen im Heim

    Elbing, Ulrich; Rohmann, Ulrich H.

    1994-01-01

    Die vorliegende Studie dokumentiert die Auswirkungen eines Intensivtherapie-Programms für Geistigbehinderte mit schweren Verhaltensstörungen oder autistischen Verhaltensweisen auf ihre in das Programm mit einbezogenen Betreuer hinsichtlich ihrer fachlichen Kompetenz, ihrer Interaktionsqualität mit den Klienten, ihrer Teamkultur und ihrer Arbeitszufriedenheit. In einem quasiexperimentellen Design schätzten sich die Betreuer vor und nach dem Intensivtherapie-Programm mit einer Ratingskala im Hi...

  15. Der Einfluss von personeller Einkommensverteilung auf die „Great Depression“ und die „Great Recession“

    Stefan Trappl

    2015-12-01

    Full Text Available Der Einfluss gestiegener Einkommensungleichheit auf die „Great Depression“ und die „Great Recession“ wurde mehrfach postuliert (Galbraith 1954/2009; Eccles 1951; Rajan 2010; Stiglitz 2012; Piketty 2014. Konkrete empirische Arbeiten zum Zusammenhang zwischen Einkommensverteilung und dem Entstehen von Wirtschaftskrisen gibt es aber bislang wenige. Kumhof/Ranciere (2010 überprüften die von Rajan (2010 aufgestellte Hypothese, die einen entsprechenden Zusammenhang postuliert, mittels Modellrechnung. Bordo/Meissner (2012 und darauf aufbauend Gu/Huang (2014 verwendeten unterschiedliche Regressionsmodelle in Bezug auf einen entsprechenden Zusammenhang, ohne jedoch eindeutige Ergebnisse zu liefern. Die vorliegende Arbeit schließt an diese Arbeiten an, beschränkt die Untersuchung allerdings auf Staaten, für die Daten für die letzten hundert Jahre verfügbar sind, und untersucht zudem explizit die Zeiträume um die beiden größten Krisen der letzten hundert Jahre, die „Great Depression“ und die „Great Recession“. Die Auswertungen zeigen, dass die personelle Einkommensverteilung ein guter Prädiktor für die Kriseneintrittswahrscheinlichkeit ist.

  16. Effects of coating molecules on the magnetic heating properties of Au-Fe3O4 heterodimer nanoparticles

    Yamamoto, Y.; Ogasawara, J.; Himukai, H.; Itoh, T.

    2016-10-01

    In this paper, we report the heating properties of gold-magnetite (Au-Fe3O4) heterodimer nanoparticles (NPs) subjected to an alternating magnetic field. The Au-Fe3O4 NPs coated with oleic acid and oleylamine (OA) were synthesized through a method that combines seed mediation and high-temperature decomposition. The coating was replaced with dimercaptosuccinic acid (DMSA) by the ligand-exchange method. The specific absorption rates (SARs) for the OA- and DMSA-coated Au-Fe3O4 NPs coated with OA and DMSA at room temperature were determined through the calorimetric and magnetometric methods. SAR depended on the square of the magnetic field H up to an H value of 4 kA/m. The absolute value of the SAR for DMSA-coated NPs is about fivefold higher than that of the OA-coated NPs. The AC magnetic hysteresis measurements showed the recovery of the magnetic volume and the decrease in the magnetic anisotropy of the DMSA-coated NPs relative to those of the OA-coated NPs. These results suggest that the protective agent influences the magnetic properties of magnetite NPs via gold NPs.

  17. Exploring the effective photon management by InP nanoparticles: Broadband light absorption enhancement of InP/In0.53Ga0.47As/InP thin-film photodetectors

    Fu, Dong; Zhu, Xi; Li, Jian; Xu, Yun; Song, Guofeng; Wei, Xin; Liu, Jietao

    2015-01-01

    High-index dielectric and semiconductor nanoparticles with the characteristics of low absorption loss and strong scattering have attracted more and more attention for improving performance of thin-film photovoltaic devices. In this paper, we focus our attention on InP nanoparticles and study the influence of the substrate and the geometrical configurations on their scattering properties. We demonstrate that, compared with the InP sphere, the InP cylinder has higher coupling efficiency due to the stronger interactions between the optical mode in the nanoparticle and its induced mirror image in the substrate. Moreover, we propose novel thin-film InGaAs photodetectors integrated with the periodically arranged InP nanoparticles on the substrate. Broadband light absorption enhancement is achieved over the wavelength range between 1.0 μm and 1.7 μm. The highest average absorption enhancement of 59.7% is realized for the photodetector with the optimized cylinder InP nanoparticles. These outstanding characteristics attribute to the preferentially forward scattering of single InP nanoparticle along with the effective coupling of incident light into the guided modes through the collective diffraction effect of InP nanoparticles array

  18. Bottom-up substitution assembly of AuF4-n0,-+nPO3 (n = 1-4): a theoretical study of novel oxyfluoride hyperhalogen molecules and anions AuF4-n(PO3)n0,-

    Yang, Yi-fan; Cui, Zhong-hua; Ding, Yi-hong

    2014-06-01

    Compounds with high electron affinity, i.e. superhalogens, have continued to attract chemists' attention, due to their potential importance in fundamental chemistry and materials science. It has now proven very effective to build up novel superhalogens with multi-positively charged centres, which are usually called 'hyperhalogens'. Herein, using AuF4- and PO3 as the model building blocks, we made the first attempt to design the Au,P-based hyperhalogen anions AuF4-n(PO3)n- (n = 1-4) at the B3LYP/6-311+G(d)&SDD and CCSD(T)/6-311+G(d)&SDD (single-point) levels (6-311+G(d) for O, F, P and SDD for Au). Notably, for all the considered Au,P systems, the ground state bears a dioxo-bonded structure with n ≤ 3, which is significantly more stable than the usually presumed mono-oxo-bonded one. Moreover, the clustering of the -PO3 moieties becomes energetically favoured for n ≥ 3. The ground states of AuP4O120,- are the first reported cage-like oxide hyperhalogens. Thus, the -PO3 moiety cannot be retained during the 'bottom-up' assembly. The vertical detachment energy (VDE) value of the most stable AuF4-n(PO3)n- (n = 1-4) ranges from 7.16 to 8.20 eV, higher than the VDE values of the corresponding building blocks AuF4- (7.08 eV) and PO3- (4.69 eV). The adiabatic detachment energy values of these four hyperhalogens exceed 6.00 eV. Possible generation routes for AuF4-n(PO3)n- (n = 1-4) were discussed. The presently designed oxyfluorides not only enriches the family of hyperhalogens, but also demonstrates the great importance of considering the structural transformation during the superhalogen → hyperhalogen design such as for the present Au-P based systems.

  19. Wavelength Conversion of a 9.35-Gb/s RZ OOK Signal in an InP Photonic Crystal Nanocavity

    Vukovic, Dragana; Yu, Yi; Heuck, Mikkel

    2014-01-01

    Wavelength conversion of a 10-Gb/s (9.35 Gb/s net rate) return-to-zero ON-OFF keying signal is demonstrated using a simple InP photonic crystal H0 nanocavity with Lorentzian line shape. The shifting of the resonance induced by the generation of free-carriers enables the pump intensity modulation...

  20. Room-temperature particle detectors with guard rings based on semi-insulating InP co-doped with Ti and Zn

    Yatskiv, Roman; Žďánský, Karel; Pekárek, Ladislav

    2009-01-01

    Roč. 598, č. 3 (2009), s. 759-763 ISSN 0168-9002 R&D Projects: GA AV ČR KAN400670651 Institutional research plan: CEZ:AV0Z20670512 Keywords : radiation detector * InP * crystal growth Subject RIV: JA - Electronics ; Optoelectronics, Electrical Engineering Impact factor: 1.317, year: 2009

  1. Investigation of semi-insulating InP co-doped with Ti and various acceptors for use in X-ray detection

    Zdansky, K.; Gorodynskyy, V.; Kozak, H.; Pekarek, L.

    2005-01-01

    Semi-insulating InP single crystals co-doped with Zn and Ti and co-doped with Ti and Mn were grown by Czochralski technique. Wafers of these crystals were annealed for a long time at a high temperature and cooled slowly. The samples were characterized by temperature dependent resistivity and Hall coefficient measurements. The binding energies of Ti in semi-insulating InP co-doped with Ti and Zn and co-doped with Ti and Mn were found to differ which shows that Ti may occupy different sites in InP. The curves of Hall coefficient vs. reciprocal temperature deviate from straight lines at low temperatures due to electron and hole mixed conductance. The value of resistivity of the annealed semi-insulating InP co-doped with Ti and Mn reaches high resistivity at a reduced temperature easily achievable by thermo-electric devices which could make this material useable in X-ray detection. (copyright 2005 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  2. Fe-contacts on InAs(100) and InP(100) characterised by conversion electron Mössbauer spectroscopy

    Damsgaard, Christian Danvad; Gunnlaugsson, H.P; Weyer, G.

    2005-01-01

    We have grown 4 nm thin films of Fe-57 on InAs(100) and InP(100) surfaces by use of MBE and studied the samples by Fe-57 conversion electron Mossbauer spectroscopy. In the case of InAs, the Mossbauer spectrum showed a sextet due to alpha-Fe and a further magnetically split component with slightly...

  3. Information technology as a tool for the Italian Institute of Social Security (INPS) in the management of social security and civil disability: Pro and cons.

    Sammicheli, Michele; Scaglione, Marcella

    2018-01-01

    We examine, from a medical-legal perspective, the pro and cons of the information technology procedures that the Italian Institute of Social Security (INPS) has implemented to manage the provision of social disability assistance, meaning that separate from the payment of pension contributions, being welfare, anchored to an administrative requirement by way of the compulsory payment of a minimum social security contribution.

  4. Epitaxial growth of quantum dots on InP for device applications operating at the 1.55 μm wavelength range

    Semenova, Elizaveta; Kulkova, Irina; Kadkhodazadeh, Shima

    2014-01-01

    . In order to extract the QD benefits for the longer telecommunication wavelength range the technology of QD fabrication should be developed for InP based materials. In our work, we take advantage of both QD fabrication methods Stranski-Krastanow (SK) and selective area growth (SAG) employing block copolymer...

  5. Design of integrated optics all-optical label swappers for spectral amplitude code label swapping optical packet networks on active/passive InP technology

    Habib, C.; Munoz, P.; Leijtens, X.J.M.; Chen, Lawrence; Smit, M.K.; Capmany, J.

    2009-01-01

    In this paper the designs of optical label swapper devices, for spectral amplitude coded labels, monolithically integrated on InP active/passive technology are pre sented. The devices are based on cross-gain modulation in a semiconductor optical amplifier. Multi-wavelength operation is enabled by

  6. Terahertz-radiation generation in low-temperature InGaAs epitaxial films on (100) and (411) InP substrates

    Galiev, G. B., E-mail: galiev-galib@mail.ru [Russian Academy of Sciences, Institute of Ultra-High Frequency Semiconductor Electronics (Russian Federation); Grekhov, M. M. [National Research Nuclear University “MEPhI” (Russian Federation); Kitaeva, G. Kh. [Moscow State University, Faculty of Physics (Russian Federation); Klimov, E. A.; Klochkov, A. N. [Russian Academy of Sciences, Institute of Ultra-High Frequency Semiconductor Electronics (Russian Federation); Kolentsova, O. S. [National Research Nuclear University “MEPhI” (Russian Federation); Kornienko, V. V.; Kuznetsov, K. A. [Moscow State University, Faculty of Physics (Russian Federation); Maltsev, P. P.; Pushkarev, S. S. [Russian Academy of Sciences, Institute of Ultra-High Frequency Semiconductor Electronics (Russian Federation)

    2017-03-15

    The spectrum and waveforms of broadband terahertz-radiation pulses generated by low-temperature In{sub 0.53}Ga{sub 0.47}As epitaxial films under femtosecond laser pumping are investigated by terahertz time-resolved spectroscopy. The In{sub 0.53}Ga{sub 0.47}As films are fabricated by molecular-beam epitaxy at a temperature of 200°C under different arsenic pressures on (100)-oriented InP substrates and, for the first time, on (411)A InP substrates. The surface morphology of the samples is studied by atomic-force microscopy and the structural quality is established by high-resolution X-ray diffraction analysis. It is found that the amplitude of terahertz radiation from the LT-InGaAs layers on the (411)A InP substrates exceeds that from similar layers formed on the (100) InP substrates by a factor of 3–5.

  7. Annealing-induced recovery of indents in thin Au(Fe bilayer films

    Anna Kosinova

    2016-12-01

    Full Text Available We employed depth-sensing nanoindentation to produce ordered arrays of indents on the surface of 50 nm-thick Au(Fe films deposited on sapphire substrates. The maximum depth of the indents was approximately one-half of the film thickness. The indented films were annealed at a temperature of 700 °C in a forming gas atmosphere. While the onset of solid-state dewetting was observed in the unperturbed regions of the film, no holes to the substrate were observed in the indented regions. Instead, the film annealing resulted in the formation of hillocks at the indent locations, followed by their dissipation and the formation of shallow depressions nearby after subsequent annealing treatments. This annealing-induced evolution of nanoindents was interpreted in terms of annihilation of dislocation loops generated during indentation, accompanied by the formation of nanopores at the grain boundaries and their subsequent dissolution. The application of the processes uncovered in this work show great potential for the patterning of thin films.

  8. Photoelectron spectroscopy study of Fe-diluted Au-Fe alloys

    Nahm, T U; Choi, B; Park, J S; Oh, S J; Cho, E J

    2003-01-01

    The electronic structure of Fe-diluted Au-Fe alloys has been studied by taking core-level and valence-band spectra using x-ray photoemission spectroscopy and synchrotron radiation. From the core-level spectroscopy, we found that the Fe 2p spectrum is composed of d sup 6 and d sup 7 multiplets from Fe impurity atoms. This behaviour is qualitatively discussed within the context of electron-electron interaction. In order to explore the electron-correlation effects in the valence band, we obtained Fe 3d partial spectral weights by taking advantage of the Cooper-minimum phenomenon of an Au 5d photoionization cross section. It was found that the spin-down states have an appreciable amount of spectral weights throughout the host Au 5d band, contrary to previous one-electron calculations predicting two-peak structure of the Fe 3d states. We suggest that this discrepancy results from the correlation effect of the Fe 3d electrons.

  9. ÜBERBLICK AUF DIE SCHRIFTLICHE UND ELEKTRONISCHE PRESSE IN DER TURKEI

    Güven BÜYÜKBAYKAL

    2013-01-01

    Full Text Available Das Thema dieser Arbeit ist die Entwicklungen der schriftlichen Presse und der elektronischen Presse in der Türkei. Auberdem wurden die Veranderungen, die die Technologie gebracht hat, zu den Wirkungen in der schriftlichen und elektronischen Presse berührt. Der Import von teurer und verschwenderischer Technologie, die Tatsache, dass die Erhöhung der Eingabepreise den Vertriebspreisen von Zeitungen nicht entgegenkommen konnte, und der sich mit den 80'igern beschleunigende Werbe-Promotionswettbewerb erhöhten die Gestehungskosten im Pressesektor und brachten das Monopol mit sich. Die Neigung zum Monopol wirkte negativ auf die Nachrichtenproduktion, -Verteilung und die Gedankenfreiheit; die Arbeitsbedingungen und die Beschaffenheitsrechte der Pressearbeiter wurden eingeschrankt. Werbungen und unser Magazintage sind der Schwerpunkt der türkischen Presse. Exklusive - reiche Massen, Prominente, die man als 'Gesellschaftssahne' bezeichnet, Sanger und Sangerinnen die in Fernsehprogrammen berühmt wurden, und das private Leben von Entertainern haben einen groBen Platz in der Presse. Nachrichten, die die Gesellschaft oder die Zukunft des Landes interessieren, können bewusst auBer Acht gelassen werden und die Tagung besteht meistens aus Gerüchten mit vielen Bildern und groBen Buchstaben, die überhaupt keinen Nachrichtenwert haben. Letztendlich sollte man Zeitungen zum lesen und nicht zum anschauen drucken. Eine Zeitung sollte nicht mit dem Fernsehen oder dem Internet konkurrieren sondern in ihrer eigenen Rennstrecke bleiben.

  10. Ein statistisches Modell zum Einfluß der thermischen Bewegung auf NMR-Festkörperspektren

    Ploss, W.; Freude, D.; Pfeifer, H.; Schmiedel, H.

    Es wird ein statistisches Modell zum Einfluß der thermischen Bewegung auf die NMR-Linienform vorgestellt, das die Verschmälerung von Festkörper-Spektren bei wachsender Temperatur beschreibt. Das Modell geht von der Annahme aus, daß nach einer Ortsveränderung eines Kerns infolge thermischer Bewegung jede beliebige Kernresonanzfrequenz mit der durch das Festkörperspektrum vorgegebenen Wahrscheinlichkeit angenommen werden kann. Am Beispiel der Festkörper-Gaußlinie wird der Unterschied zu dem bekannten Modell von ANDERSON und WEISS verdeutlicht.Translated AbstractA Statistical Model for the Influence of Thermal Motion on N. M. R. Spectra in SolidsA theory is proposed which allows to describe the narrowing of n. m. r.-line width in the presence of thermal motions of the spins. The model is based on the assumption, that the local resonance frequency of a given spin immediately after the jump is distributed according to the n. m. r.-line shape of the rigid lattice. The difference to the well-known ANDERSON-WEISS-model of spectral narrowing is demonstrated for a gaussian line shape.

  11. Familienfreundliche Betriebe nehmen auf Vaterschaft Rücksicht! Family-Friendly Businesses Show Consideration for Fatherhood!

    Martin R. Textor

    2004-11-01

    Full Text Available Das Handbuch VäterArbeit zeigt auf, wie wichtig es ist, das Thema „Vatersein“ in Unternehmen und Organisationen zu diskutieren und betriebliche Maßnahmen zur Unterstützung einer kindgerechten Ausübung von Vaterschaft zu initiieren und umzusetzen. Die Politik muss dafür die entsprechenden gesetzlichen Rahmenbedingungen schaffen. Väter sollten ihre Rollen hinterfragen und die schon gegebenen Spielräume hinsichtlich einer verbesserten Vereinbarkeit von Familie und Beruf nutzen.Handbuch VaterArbeit (The CareerFather Handbook illustrates how important it is to discuss the subject of “being a father” in businesses and organizations and to initiate and apply company measures to promote a practice of fatherhood that is equitable to the child. Policy must establish the corresponding legal framework and conditions for this. Fathers should question their roles and utilize the latitude already present that promotes an improved agreement between family and job.

  12. Waste incineration on its way to the power plants; Muellverbrennung auf dem Weg zum Kraftwerk

    Reich, J. [STEAG encotec GmbH, Essen (Germany); Neukirchen, B. [STEAG AG, Essen (Germany)

    2004-07-01

    Looking at the year 2005 and the end of disposal of untreated domestic waste the politic hopes that the prognosticated lack of waste treatment capacity is remedied by coal-fired power plants. The classical municipal waste incinerators by contrast want to get recognition as energetic recycler in comparison with power stations. The decision of the European Court of Justice concerning recycling and disposal of domestic waste by incineration has started the discussion and competition on fuel-rich commercial waste. Are municipal waste incineration plants power stations or must power plants be regarded as incinerators? These questions are still open. (orig.) [German] Mit Blick auf das Jahr 2005 und das Ende der Ablagerung von unbehandeltem Siedlungsabfall hofft die Politik, dass der prognostizierte Mangel an Vorbehandlungskapazitaeten von den Kohlekraftwerken behoben wird. Die klassischen Muellverbrennungsanlagen wollen dagegen mit dem Kraftwerksvergleich die Anerkennung als energetische Verwerter erreichen. Das EuGH-Urteil zur Verwertung oder Beseitigung von Siedlungsabfall durch Verbrennen hat in diesem Jahr die Diskussion und den Kampf um den heizwertreichen Gewerbeabfall angeheizt. Die Frage, wie weit in Zukunft die Muellverbrennungsanlagen als Kraftwerke, aber auch die Kraftwerke als Muellverbrennungsanlagen angesehen werden muessen, ist noch offen. (orig.)

  13. Recent developments in the electricity generation market in 2014; Aktuelle Entwicklungen auf dem Stromerzeugungsmarkt im Jahr 2014

    Hofmann, Holger [Oppenhoff und Partner Rechtsanwaelte Steuerberater mbB, Koeln (Germany)

    2015-02-16

    Following up the report on the developments in the Electricity market from last year to this case this article shall give an overview of the current developments in 2014. The year 2014 was marked by the energy sector Program of the coalition agreement, which, under the three objectives of security of supply Affordability and environmental impact which has made clear Specifications for the production side in particular with regard to the final Nuclear Phase-out phase, the announced amendment of the EEG, system stability and also Fracking. The predominant theme in 2014 this was certainly the reform of the EEG and around it rambling topics on European level. Too much uncertainty with plant operators, investors and companies in German power generation market, has led in addition to the mentioned legislative package the revision of the EU environmental and energy aid guidelines, State aid procedure of the European Commission regarding the German promotion of electricity from renewable Energy and the process in the case of Aaland Vindkraft before the ECJ. The dynamics on the generation side, inter alia through the increased connection of decentralized generation plants, result in an increasing regulation in power generation. Finally a first bill for Fracking is published at the end of 2014. [German] Anknuepfend an den Bericht ueber die Entwicklungen auf dem Stromerzeugungsmarkt aus dem letzten Jahr soll dieser Beitrag einen Ueberblick ueber die aktuellen Entwicklungen in 2014 geben. Das Jahr 2014 war gepraegt von dem energiewirtschaftlichen Programm des Koalitionsvertrags, das unter dem Zieldreieck aus Versorgungssicherheit, Preisguenstigkeit und Umweltvertraeglichkeit klare Vorgaben fuer die Erzeugerseite vor allem mit Blick auf den endgueltigen Atomausstieg, die angekuendigte Novellierung des EEG, Systemstabilitaet und auch Fracking gemacht hat. Das vorherrschende Thema im Jahr 2014 war hierbei sicherlich die Reform des EEG sowie die sich darum rankenden Themen auf

  14. Biological constraints limit the use of rapamycin-inducible FKBP12-Inp54p for depleting PIP2 in dorsal root ganglia neurons.

    Coutinho-Budd, Jaeda C; Snider, Samuel B; Fitzpatrick, Brendan J; Rittiner, Joseph E; Zylka, Mark J

    2013-09-08

    Rapamycin-induced translocation systems can be used to manipulate biological processes with precise temporal control. These systems are based on rapamycin-induced dimerization of FK506 Binding Protein 12 (FKBP12) with the FKBP Rapamycin Binding (FRB) domain of mammalian target of rapamycin (mTOR). Here, we sought to adapt a rapamycin-inducible phosphatidylinositol 4,5-bisphosphate (PIP2)-specific phosphatase (Inp54p) system to deplete PIP2 in nociceptive dorsal root ganglia (DRG) neurons. We genetically targeted membrane-tethered CFP-FRBPLF (a destabilized FRB mutant) to the ubiquitously expressed Rosa26 locus, generating a Rosa26-FRBPLF knockin mouse. In a second knockin mouse line, we targeted Venus-FKBP12-Inp54p to the Calcitonin gene-related peptide-alpha (CGRPα) locus. We hypothesized that after intercrossing these mice, rapamycin treatment would induce translocation of Venus-FKBP12-Inp54p to the plasma membrane in CGRP+ DRG neurons. In control experiments with cell lines, rapamycin induced translocation of Venus-FKBP12-Inp54p to the plasma membrane, and subsequent depletion of PIP2, as measured with a PIP2 biosensor. However, rapamycin did not induce translocation of Venus-FKBP12-Inp54p to the plasma membrane in FRBPLF-expressing DRG neurons (in vitro or in vivo). Moreover, rapamycin treatment did not alter PIP2-dependent thermosensation in vivo. Instead, rapamycin treatment stabilized FRBPLF in cultured DRG neurons, suggesting that rapamycin promoted dimerization of FRBPLF with endogenous FKBP12. Taken together, our data indicate that these knockin mice cannot be used to inducibly deplete PIP2 in DRG neurons. Moreover, our data suggest that high levels of endogenous FKBP12 could compete for binding to FRBPLF, hence limiting the use of rapamycin-inducible systems to cells with low levels of endogenous FKBP12.

  15. Lattice dynamics and vibration modes frequencies for substitutional impurities in InP, GaP and ZnS

    Vandevyver, Michel; Plumelle, Pierre.

    1977-01-01

    The model used is a rigid-ion model with an effective ionic charge including general interactions for nearest and next nearest neighbours and long range Coulomb interactions. It provides a good fit with available neutron data and with infrared absorption results for InP. In this model, no hypothesis is made a priori on the interatomic forces and the eleven parameters given by the model are used. A mathematical model which employs a Green's function technique in the mass defect and the nearest neighbour force constant defect approximation is used to calculate the lattice dynamics of the imperfect crystal. The frequencies of the local modes, the gap modes and the band modes, are given for isolated substitutional impurities. The same calculation is achieved for GaP and ZnS and the results are compared with infrared data [fr

  16. Growth of anodic films on compound semiconductor electrodes: InP in aqueous (NH sub 4) sub 2 S

    Buckley, D N

    2002-01-01

    Film formation on compound semiconductors under anodic conditions is discussed. The surface properties of InP electrodes were examined following anodization in a (NH sub 4) sub 2 S electrolyte. The observation of a current peak in the cyclic voltammetric curve was attributed to selective etching of the substrate and a film formation process. AFM images of samples anodized in the sulfide solution revealed surface pitting. Thicker films formed at higher potentials exhibited extensive cracking as observed by optical and electron microscopy, and this was explicitly demonstrated to occur ex situ rather than during the electrochemical treatment. The composition of the thick film was identified as In sub 2 S sub 3 by EDX and XPS. The measured film thickness varies linearly with the charge passed, and comparison between experimental thickness measurements and theoretical estimates for the thickness indicate a porosity of over 70 %. Cracking is attributed to shrinkage during drying of the highly porous film and does n...

  17. PIXE channeling for concentration and location measurements of Zn- and Cd-dopants in InP single crystals

    Vogt, J.; Krause, H.; Flagmeyer, R.; Otto, G.; Lux, M.

    1993-01-01

    We present results of the determination of Cd- and Zn-dopants in InP single crystals using the PIXE and RBS spectrometry at our 2 MeV Van de Graaff accelerator. The (100) oriented crystals were doped by thermodiffusion of Cd and Zn atoms. For concentration and localization measurements we used the ion-channeling technique and energy dispersive spectrometry of proton induced X-ray emission (PIXE). Angular scans of the K-lines of In, Cd and Zn were obtained. The strong In X-rays were attenuated by a rhodium foil in front of the low energy Ge detector. The PIXE-channeling results were compared with SIMS and Hall-effect measurements. (orig.)

  18. Optical characterization of InAs quantum wells and dots grown radially on wurtzite InP nanowires

    Lindgren, David; Kawaguchi, Kenichi; Heurlin, Magnus; Borgström, Magnus T; Pistol, Mats-Erik; Samuelson, Lars; Gustafsson, Anders

    2013-01-01

    Correlated micro-photoluminescence (μPL) and cathodoluminescence (CL) measurements are reported for single core–shell InP–InAs wurtzite nanowires grown using metal–organic vapor phase epitaxy. Samples covering a radial InAs shell thickness of 1–12 ML were investigated. The effective masses for the wurtzite material were determined from the transition energy dependence of the InAs shell thickness, using a model based on linear deformation potential theory. InP cores with segments of mixed zincblende and wurtzite, on which quantum dots nucleated selectively, were also investigated. Narrow peaks were observed by μPL and the spatial origin of the emission was identified with CL imaging. (paper)

  19. W-band push—push monolithic frequency doubler in 1-μm InP DHBT technology

    Yao Hongfei; Wang Xiantai; Wu Danyu; Su Yongbo; Cao Yuxiong; Ge Ji; Ning Xiaoxi; Jin Zhi

    2013-01-01

    A W-band frequency doubler MMIC is designed and fabricated using 1-μm InP DHBT technology. Active balun is employed to transform the single-ended signal into differential output. Push—push configuration loaded with harmonic resonant network is utilized to acquire the second harmonic frequency. A multi-stage differential structure improves the conversion gain and suppresses the fundamental frequency. The MMIC occupies an area of 0.55 × 0.5 mm 2 with 18 DHBTs integrated. Measurements show that the output power is above 5.8 dBm with the suppression of fundamental frequency below −16 dBc and the conversion gain above 4.7 dB over 75–80 GHz. (semiconductor integrated circuits)

  20. Magnetoresistance measurements of different geometries on epitaxial InP and GaInAs/InP layers

    Somogyi, K. [Hungarian Academy of Sciences, Budapest (Hungary). Research Inst. for Technical Physics

    1996-12-31

    Hall effect measurement is the main method of the determination of the charge carrier mobility in semiconductors. Magnetoresistance measurements are much less used for the same purpose, perhaps because of the influence of the sample geometry or of the scattering factor differing from the Hall factor. On the other hand, in the case of the epitaxial layers, all these measurements require semi-insulating substrate. In this work two aspects of the magnetoresistance measurements and use of them is demonstrated. First classical geometrical magnetoresistance measurements on InP are studied. On the other hand, a method is presented and applied to sandwich structures in order to measure the geometrical magnetoresistance on epitaxial layers grown on conducting substrates. Resistance of structures metal-epitaxial layer-substrate-metal is measured in the dependence on the angle between the current and magnetic field vectors.