WorldWideScience

Sample records for audio power amplifiers

  1. Audio power amplifier design handbook

    CERN Document Server

    Self, Douglas

    2013-01-01

    This book is essential for audio power amplifier designers and engineers for one simple reason...it enables you as a professional to develop reliable, high-performance circuits. The Author Douglas Self covers the major issues of distortion and linearity, power supplies, overload, DC-protection and reactive loading. He also tackles unusual forms of compensation and distortion produced by capacitors and fuses. This completely updated fifth edition includes four NEW chapters including one on The XD Principle, invented by the author, and used by Cambridge Audio. Cro

  2. Switching-mode Audio Power Amplifiers with Direct Energy Conversion

    DEFF Research Database (Denmark)

    Ljusev, Petar; Andersen, Michael Andreas E.

    2005-01-01

    This paper presents a new class of switching-mode audio power amplifiers, which are capable of direct energy conversion from the AC mains to the audio output. They represent an ultimate integration of a switching-mode power supply and a Class D audio power amplifier, where the intermediate DC bus...... component count, volume and cost....

  3. Current-Driven Switch-Mode Audio Power Amplifiers

    DEFF Research Database (Denmark)

    Knott, Arnold; Buhl, Niels Christian; Andersen, Michael A. E.

    2012-01-01

    The conversion of electrical energy into sound waves by electromechanical transducers is proportional to the current through the coil of the transducer. However virtually all audio power amplifiers provide a controlled voltage through the interface to the transducer. This paper is presenting a...... switch-mode audio power amplifier not only providing controlled current but also being supplied by current. This results in an output filter size reduction by a factor of 6. The implemented prototype shows decent audio performance with THD + N below 0.1 %....

  4. Multi Carrier Modulator for Switch-Mode Audio Power Amplifiers

    DEFF Research Database (Denmark)

    Knott, Arnold; Pfaffinger, Gerhard; Andersen, Michael Andreas E.

    2008-01-01

    While switch-mode audio power amplifiers allow compact implementations and high output power levels due to their high power efficiency, they are very well known for creating electromagnetic interference (EMI) with other electronic equipment, in particular radio receivers. Lowering the EMI of switch......-mode audio power amplifiers while keeping the performance measures to excellent levels is therefore of high general interest. A modulator utilizing multiple carrier signals to generate a two level pulse train will be shown in this paper. The performance of the modulator will be compared in simulation to...... existing modulation topologies. The lower EMI as well as the preserved audio performance will be shown in simulation as well as in measurement results on a prototype....

  5. Direct-conversion switching-mode audio power amplifier with active capacitive voltage clamp

    OpenAIRE

    Ljusev, Petar; Andersen, Michael Andreas E.

    2005-01-01

    This paper discusses the advantages and problems when implementing direct energy conversion switching-mode audio power amplifiers. It is shown that the total integration of the power supply and Class D audio power amplifier into one compact direct converter can simplify the design, increase efficiency, reduce the product volume and lower its cost. As an example, the principle of operation and the measurements made on a direct-conversion switching-mode audio power amplifier with active capacit...

  6. Multi Carrier Modulation Audio Power Amplifier with Programmable Logic

    DEFF Research Database (Denmark)

    Christiansen, Theis; Andersen, Toke Meyer; Knott, Arnold;

    2009-01-01

    amplifiers while keeping the performance measures to excellent levels is therefore of high interest. In this paper a class D audio amplifier utilising Multi Carrier Modulation (MCM) will be analysed, and a prototype Master-Slave Multi Carrier Modulated (MS MCM) amplifier has been constructed and measured for...... performance and out of band spectral amplitudes. The basic principle in MCM is to use programmable logic to combine two or more Pulse Width Modulated (PWM) audio signals at different switching frequencies. In this way the out of band spectrum will be lowered compared with conventional class D amplifiers...

  7. Debugging of Class-D Audio Power Amplifiers

    DEFF Research Database (Denmark)

    Crone, Lasse; Pedersen, Jeppe Arnsdorf; Mønster, Jakob Døllner;

    2012-01-01

    Determining and optimizing the performance of a Class-D audio power amplier can be very dicult without knowledge of the use of audio performance measuring equipment and of how the various noise and distortion sources in uence the audio performance. This paper gives an introduction on how to measure...

  8. Direct-conversion switching-mode audio power amplifier with active capacitive voltage clamp

    DEFF Research Database (Denmark)

    Ljusev, Petar; Andersen, Michael Andreas E.

    2005-01-01

    This paper discusses the advantages and problems when implementing direct energy conversion switching-mode audio power amplifiers. It is shown that the total integration of the power supply and Class D audio power amplifier into one compact direct converter can simplify the design, increase effic...... efficiency, reduce the product volume and lower its cost. As an example, the principle of operation and the measurements made on a direct-conversion switching-mode audio power amplifier with active capacitive voltage clamp are presented.......This paper discusses the advantages and problems when implementing direct energy conversion switching-mode audio power amplifiers. It is shown that the total integration of the power supply and Class D audio power amplifier into one compact direct converter can simplify the design, increase...

  9. Self-oscillating modulators for direct energy conversion audio power amplifiers

    DEFF Research Database (Denmark)

    Ljusev, Petar; Andersen, Michael Andreas E.

    2005-01-01

    Direct energy conversion audio power amplifier represents total integration of switching-mode power supply and Class D audio power amplifier into one compact stage, achieving high efficiency, high level of integration, low component count and eventually low cost. This paper presents how self......-oscillating modulators can be used with the direct switching-mode audio power amplifier to improve its performance by providing fast hysteretic control with high power supply rejection ratio, open-loop stability and high bandwidth. Its operation is thoroughly analyzed and experimental results from prototype amplifier...

  10. Direct-conversion switching-mode audio power amplifier with active capacitive voltage clamp

    Energy Technology Data Exchange (ETDEWEB)

    Ljusev, P.; Andersen, Michael A.E.

    2005-07-01

    This paper discusses the advantages and problems when implementing direct energy conversion switching-mode audio power amplifiers. It is shown that the total integration of the power supply and Class D audio power amplifier into one compact direct converter can simplify design, increase efficiency and integration level, reduce product volume and lower its cost. As an example, the principle of operation and the measurements made on a direct-conversion switching-mode audio power amplifier with active capacitive voltage clamp are presented. (au)

  11. A New Principle for a High Efficiency Power Audio Amplifier for Use with a Digital Preamplifier

    DEFF Research Database (Denmark)

    Jensen, Jørgen Arendt

    1986-01-01

    The use of class-B and class-D amlifiers for converting digital audio signals to analog signals is discussed. It is shown that the class-D amplifier is unsuitable due to distortion. Therefore, a new principle involving a switch-mode power supply and a class-B amplifier is suggested. By regulating...... the supply voltage to the amplifier according to the amplitude of the audio signal, a higher efficiency than can be obtained by the current principles is achieved. The regulation can be done very efficiently by generating the control signal to the power supply in advance of the audio signal, made...

  12. Approaches to building single-stage AC/AC conversion switch-mode audio power amplifiers

    Energy Technology Data Exchange (ETDEWEB)

    Ljusev, P.; Andersen, Michael A.E.

    2005-07-01

    This paper discusses the possible topologies and promising approaches towards direct single-phase AC-AC conversion of the mains voltage for audio applications. When compared to standard Class-D switching audio power amplifiers with a separate power supply, it is expected that direct conversion will provide better efficiency and higher level of integration, leading to lower component count, volume and cost, but at the expense of a minor performance deterioration. (au)

  13. Approaches to building single-stage AC/AC conversion switch-mode audio power amplifiers

    DEFF Research Database (Denmark)

    Ljusev, Petar; Andersen, Michael Andreas E.

    2004-01-01

    This paper discusses the possible topologies and promising approaches towards direct single-phase AC-AC conversion of the mains voltage for audio applications. When compared to standard Class-D switching audio power amplifiers with a separate power supply, it is expected that direct conversion...... will provide better efficiency and higher level of integration, leading to lower component count, volume and cost, but at the expense of a minor performance deterioration....

  14. A high efficiency PWM CMOS class-D audio power amplifier

    International Nuclear Information System (INIS)

    Based on the difference close-loop feedback technique and the difference pre-amp, a high efficiency PWM CMOS class-D audio power amplifier is proposed. A rail-to-rail PWM comparator with window function has been embedded in the class-D audio power amplifier. Design results based on the CSMC 0.5 μm CMOS process show that the max efficiency is 90%, the PSRR is -75 dB, the power supply voltage range is 2.5-5.5 V, the THD+N in 1 kHz input frequency is less than 0.20%, the quiescent current in no load is 2.8 mA, and the shutdown current is 0.5 μA. The active area of the class-D audio power amplifier is about 1.47 x 1.52 mm2. With the good performance, the class-D audio power amplifier can be applied to several audio power systems.

  15. A high efficiency PWM CMOS class-D audio power amplifier

    Science.gov (United States)

    Zhangming, Zhu; Lianxi, Liu; Yintang, Yang; Han, Lei

    2009-02-01

    Based on the difference close-loop feedback technique and the difference pre-amp, a high efficiency PWM CMOS class-D audio power amplifier is proposed. A rail-to-rail PWM comparator with window function has been embedded in the class-D audio power amplifier. Design results based on the CSMC 0.5 μm CMOS process show that the max efficiency is 90%, the PSRR is -75 dB, the power supply voltage range is 2.5-5.5 V, the THD+N in 1 kHz input frequency is less than 0.20%, the quiescent current in no load is 2.8 mA, and the shutdown current is 0.5 μA. The active area of the class-D audio power amplifier is about 1.47 × 1.52 mm2. With the good performance, the class-D audio power amplifier can be applied to several audio power systems.

  16. Frequency dependent loss analysis and minimization of system losses in switchmode audio power amplifiers

    DEFF Research Database (Denmark)

    Yamauchi, Akira; Knott, Arnold; Jørgensen, Ivan Harald Holger;

    2014-01-01

    In this paper, frequency dependent losses in switch-mode audio power amplifiers are analyzed and a loss model is improved by taking the voltage dependence of the parasitic capacitance of MOSFETs into account. The estimated power losses are compared to the measurement and great accuracy is achieved....... By choosing the optimal switching frequency based on the proposed analysis, the experimental results show that system power losses of the reference design are minimized and an efficiency improvement of 8 % in maximum is achieved without compromising audio performances....

  17. Comparison of Power Supply Pumping of Switch-Mode Audio Power Amplifiers with Resistive Loads and Loudspeakers as Loads

    DEFF Research Database (Denmark)

    Knott, Arnold; Petersen, Lars Press

    2013-01-01

    Power supply pumping is generated by switch-mode audio power amplifiers in half-bridge configuration, when they are driving energy back into their source. This leads in most designs to a rising rail voltage and can be destructive for either the decoupling capacitors, the rectifier diodes in the...... power supply or the power stage of the amplifier. Therefore precautions are taken by the amplifier and power supply designer to avoid those effects. Existing power supply pumping models are based on an ohmic load attached to the amplifier. This paper shows the analytical derivation of the resulting...

  18. A new principle for a high-efficiency power audio amplifier for use with a digital preamplifier

    DEFF Research Database (Denmark)

    Jensen, Jørgen Arendt

    1987-01-01

    The use of class-B and class-D amplifiers for converting digital audio signals to analog signals is discussed. It is shown that the class-D amplifier is unsuitable due to distortion. Therefore a new principle involving a switch-mode power supply and a class-B amplifier is suggested. By regulating...... the supply voltage to the amplifier according to the amplitude of the audio signal, a higher efficiency than can be obtained by the usual principles is achieved. The regulation can be done very efficiently by generating the control signal to the power supply in advance of the audio signal, made...

  19. Comparison of Power Supply Pumping of Switch-Mode Audio Power Amplifiers with Resistive Loads and Loudspeakers as Loads

    DEFF Research Database (Denmark)

    Knott, Arnold; Petersen, Lars Press

    2013-01-01

    Power supply pumping is generated by switch-mode audio power amplifiers in half-bridge configuration, when they are driving energy back into their source. This leads in most designs to a rising rail voltage and can be destructive for either the decoupling capacitors, the rectifier diodes in the...

  20. High efficiency class-Ⅰ audio power amplifier using a single adaptive supply

    Institute of Scientific and Technical Information of China (English)

    Peng Zhenfei; Yang Shanshan; Feng Yong; Liu Yang; Hong Zhiliang

    2012-01-01

    A high efficiency class-Ⅰ linear audio power amplifier (PA) with an adaptive supply is presented.Its efficiency is improved by a dynamic supply to reduce the power transistors' voltage drop.A gain compression technique is adopted to make the amplifier accommodate a single positive supply.Circuit complicity and chip area are reduced because no charge pump is necessary for the negative supply.A common shared mode voltage and a symmetric layout pattern are used to minimize the non-linearity.A peak efficiency of 80% is reached at peak output power.The measured THD+N before and after the supply switching point are 0.01% and 0.05%,respectively.The maximum output power is 410 mW for an 8 Ω speaker load.Unlike switching amplifiers,the class-Ⅰ amplifier operates as a linear amplifier and hence has a low EMI.The advantage of a high efficiency and low EMI makes the class-Ⅰ amplifier suitable for portable and RF sensitive applications.

  1. An audio FIR-DAC in a BCD process for high power Class-D amplifiers

    OpenAIRE

    Doorn, T.S.; Tuijl, van, B.A.J.; Schinkel, D.; Annema, A.J.; Berkhout, M.; Nauta, B.

    2005-01-01

    A 322 coefficient semi-digital FIR-DAC using a 1-bit PWM input signal was designed and implemented in a high voltage, audio power bipolar CMOS DMOS (BCD) process. This facilitates digital input signals for an analog class-D amplifier in BCD. The FIR-DAC performance depends on the ISI-resistant nature of this PWM-signal. An impulse response with only positive coefficients was chosen, because of its resistance to deadzone and mismatch. With a DAC current of 0.5 mA, the dynamic range is 111 dB (...

  2. A dual mode charge pump with adaptive output used in a class G audio power amplifier

    International Nuclear Information System (INIS)

    A dual mode charge pump to produce an adaptive power supply for a class G audio power amplifier is presented. According to the amplitude of the input signals, the charge pump has two level output voltage rails available to save power. It operates both in current mode at high output load and in pulse frequency modulation (PFM) at light load to reduce the power dissipation. Also, dynamic adjustment of the power stage transistor size based on load current at the PFM mode is introduced to reduce the output voltage ripple and prevent the switching frequency from audio range. The prototype is implemented in 0.18 μm 3.3 V CMOS technology. Experimental results show that the maximum power efficiency of the charge pump is 79.5% - 0.5x mode and 83.6% - 1x mode. The output voltage ripple is less than 15 mV while providing 120 mA of the load current at PFM control and less than 18 mV while providing 300 mA of the load current at current mode control. An analytical model for ripple voltage and efficiency calculation of the proposed PFM control demonstrates reasonable agreement with measured results. (semiconductor integrated circuits)

  3. A dual mode charge pump with adaptive output used in a class G audio power amplifier

    Science.gov (United States)

    Yong, Feng; Zhenfei, Peng; Shanshan, Yang; Zhiliang, Hong; Yang, Liu

    2011-04-01

    A dual mode charge pump to produce an adaptive power supply for a class G audio power amplifier is presented. According to the amplitude of the input signals, the charge pump has two level output voltage rails available to save power. It operates both in current mode at high output load and in pulse frequency modulation (PFM) at light load to reduce the power dissipation. Also, dynamic adjustment of the power stage transistor size based on load current at the PFM mode is introduced to reduce the output voltage ripple and prevent the switching frequency from audio range. The prototype is implemented in 0.18 μm 3.3 V CMOS technology. Experimental results show that the maximum power efficiency of the charge pump is 79.5% @ 0.5x mode and 83.6% @ 1x mode. The output voltage ripple is less than 15 mV while providing 120 mA of the load current at PFM control and less than 18 mV while providing 300 mA of the load current at current mode control. An analytical model for ripple voltage and efficiency calculation of the proposed PFM control demonstrates reasonable agreement with measured results.

  4. Practical considerations for integrating switch mode audio amplifiers and loudspeakers for a higher power efficiency

    DEFF Research Database (Denmark)

    Poulsen, Søren; Andersen, Michael Andreas E.

    2004-01-01

    An integration of electrodynamic loudspeakers and switch mode amplifiers has earlier been proposed in [1]. The work presented in this paper is related to the practical aspects of integration of switch mode audio amplifiers and electro dynamic loudspeakers, using the speaker’s voice coil as output...

  5. Investigation of Energy Consumption and Sound Quality for Class-D Audio Amplifiers using Tracking Power Supplies

    DEFF Research Database (Denmark)

    Yamauchi, Akira; Schneider, Henrik; Knott, Arnold;

    2015-01-01

    The main advantage of Class-D audio amplifiers is high efficiency which is often stated to be more than 90 % but at idle or low power levels the efficiency is much lower. The waste energy is an environmental concern, a concern in mobile applications where long battery operation is required and a...

  6. A high performance switching audio amplifier using sliding mode control

    OpenAIRE

    Pillonnet, Gael; Cellier, Rémy; Abouchi, Nacer; Chiollaz, Monique

    2008-01-01

    International audience The switching audio amplifiers are widely used in various portable and consumer electronics due to their high efficiency, but suffers from low audio performances due to inherent nonlinearity. This paper presents an integrated class D audio amplifier with low consumption and high audio performances. It includes a power stage and an efficient control based on sliding mode technique. This monolithic class D amplifier is capable of delivering up to 1W into 8Ω load at les...

  7. Predistortion of a Bidirectional Cuk Audio Amplifier

    DEFF Research Database (Denmark)

    Birch, Thomas Hagen; Nielsen, Dennis; Knott, Arnold;

    2014-01-01

    using predistortion. This paper suggests linearizing a nonlinear bidirectional Cuk audio amplifier using an analog predistortion approach. A prototype power stage was built and results show that a voltage gain of up to 9 dB and reduction in THD from 6% down to 3% was obtainable using this approach....

  8. Audio power amplifier techniques with energy efficient power conversion. Vol. 1

    Energy Technology Data Exchange (ETDEWEB)

    Nielsen, Karsten

    1998-04-01

    A fundamental study of both analog and digital pulse modulation methods is carried out. A novel class of multi-level pulse modulation methods - Phase Shifted Carrier Pulse Width Modulation (PSCPWM) - is introduced and show to have several advantageous features, primarily caused by the much improved synthesis of the modulating signal. Enhanced digital pulse modulation methods for digital Pulse Modulation Amplifier (PMA) systems are investigated, and a simple methodology for digital PWM modulator synthesis is devised. It is concluded, that the modulator performance is not a limitation in the system, regardless of the domain of modulator implementation. Power conversion in PMA systems is adressed from the perspective of both linearity and efficienty optimization. Based on detailed studies of the distortion mechanisms in the power conversion stage it is concluded, that this is the fundamental limitation on system performance due to several physical limitations. The analysis of general power stage efficiency concludes that dramatic improvements in energy efficiency are possible with PMA systems that are optimized for efficiency. A control system design methodology is devised as a platform for synthesis of robust control systems. Investigations of three fundamental control structures show that even simple control systems offer a remarkable value, although the considered topologies also have their limitations which is verified by practical evaluation in hardware. A novel control method is introduced - Multivariable Enhanced Cascade Control (MECC). MECC provides flexible control over all essential system parameters and is furthermore simple in realization. Practical evaluation of a MECC based PMA shows state-of-the-art performance. The application of non-linear control methods is investigated with the introduction of an enhanced non-linear control/modulator topology. Although the non-linear controller is theoretically interesting, the method proves to suffer from various

  9. Active Electromagnetic Interference Cancelation for Automotive Switch-Mode Audio Power Amplifiers

    DEFF Research Database (Denmark)

    Knott, Arnold; Pfaffinger, Gerhard; Andersen, Michael A. E.

    2009-01-01

    Recent trends in the automotive audio industry have shown the importance of active noise cancelation (ANC) for major improvements in mobile entertainment environments. These approaches target the acoustical noise in the cabin and superimpose an inverse noise signal to cancel disturbances. Electro......Recent trends in the automotive audio industry have shown the importance of active noise cancelation (ANC) for major improvements in mobile entertainment environments. These approaches target the acoustical noise in the cabin and superimpose an inverse noise signal to cancel disturbances...

  10. Efficiency Optimization in Class-D Audio Amplifiers

    DEFF Research Database (Denmark)

    Yamauchi, Akira; Knott, Arnold; Jørgensen, Ivan Harald Holger;

    2015-01-01

    This paper presents a new power efficiency optimization routine for designing Class-D audio amplifiers. The proposed optimization procedure finds design parameters for the power stage and the output filter, and the optimum switching frequency such that the weighted power losses are minimized under...... the given constraints. The optimization routine is applied to minimize the power losses in a 130 W class-D audio amplifier based on consumer behavior investigations, where the amplifier operates at idle and low power levels most of the time. Experimental results demonstrate that the optimization...... method can lead to around 30 % of efficiency improvement at 1.3 W output power without significant effects on both audio performance and the efficiency at high power levels....

  11. Investigation of crosstalk in self oscillating switch mode audio power amplifier

    DEFF Research Database (Denmark)

    Birch, Thomas Haagen; Ploug, Rasmus Overgaard; Iversen, Niels Elkjær;

    2012-01-01

    Self oscillating switch mode power ampliers are known to be susceptible to interchannel disturbances also known as crosstalk. This phenomenon has a signicant impact on the performance of an amplier of this type. The goal of this paper is to investigate the presence and origins of crosstalk in a two...... channel self oscillating switch mode power amplier (class D). A step by step reduction of elements in an amplier built for this task, is used for methodically determining the actual presence and origins of crosstalk. The investigation shows that the crosstalk is caused by couplings in the self oscillating...... pulse width modulation circuits, but also that the output lter has a major impact on the level of crosstalk....

  12. Four-quadrant flyback converter for direct audio power amplification

    DEFF Research Database (Denmark)

    Ljusev, Petar; Andersen, Michael Andreas E.

    2005-01-01

    This paper presents a bidirectional, four-quadrant flyback converter for use in direct audio power amplification. When compared to the standard Class-D switching audio power amplifier with a separate power supply, the proposed four-quadrant flyback converter provides simple solution with better...

  13. Efficient audio power amplification - challenges

    Energy Technology Data Exchange (ETDEWEB)

    Andersen, Michael A.E.

    2005-07-01

    For more than a decade efficient audio power amplification has evolved and today switch-mode audio power amplification in various forms are the state-of-the-art. The technical steps that lead to this evolution are described and in addition many of the challenges still to be faced and where extensive research and development are needed is covered. (au)

  14. Efficient Audio Power Amplification - Challenges

    DEFF Research Database (Denmark)

    Andersen, Michael Andreas E.

    2005-01-01

    For more than a decade efficient audio power amplification has evolved and today switch-mode audio power amplification in various forms are the state-of-the-art. The technical steps that lead to this evolution are described and in addition many of the challenges still to be faced and where...

  15. Multilevel inverter based class D audio amplifier for capacitive transducers

    DEFF Research Database (Denmark)

    Nielsen, Dennis; Knott, Arnold; Andersen, Michael A. E.

    2014-01-01

    The reduced semiconductor voltage stress makes the multilevel inverters especially interesting, when driving capacitive transducers for audio applications. A ± 300 V flying capacitor class D audio amplifier driving a 100 nF load in the midrange region of 0.1-3.5 kHz with Total Harmonic Distortion...

  16. Class-D audio amplifiers with negative feedback

    OpenAIRE

    Cox, Stephen M.; Candy, B. H.

    2006-01-01

    There are many different designs for audio amplifiers. Class-D, or switching, amplifiers generate their output signal in the form of a high-frequency square wave of variable duty cycle (ratio of on time to off time). The square-wave nature of the output allows a particularly efficient output stage, with minimal losses. The output is ultimately filtered to remove components of the spectrum above the audio range. Mathematical models are derived here for a variety of related class-D amplifier d...

  17. RF Power Amplifier Analysis

    OpenAIRE

    M. Lokay; K. Pelikan

    1993-01-01

    The special program is presented for the demonstration of RF power transistor amplifiers for the purposes of the high-school education in courses of radio transmitters. The program is written in Turbo Pascal 6. 0 and enables to study the waveforms in selected points of the amplifier and to draw the trajectories of the working point in a plot of output transistor characteristics.

  18. RF Power Amplifier Analysis

    Directory of Open Access Journals (Sweden)

    M. Lokay

    1993-04-01

    Full Text Available The special program is presented for the demonstration of RF power transistor amplifiers for the purposes of the high-school education in courses of radio transmitters. The program is written in Turbo Pascal 6. 0 and enables to study the waveforms in selected points of the amplifier and to draw the trajectories of the working point in a plot of output transistor characteristics.

  19. A digital input class-D audio amplifier with sixth-order PWM

    International Nuclear Information System (INIS)

    A digital input class-D audio amplifier with a sixth-order pulse-width modulation (PWM) modulator is presented. This modulator moves the PWM generator into the closed sigma—delta modulator loop. The noise and distortions generated at the PWM generator module are suppressed by the high gain of the forward loop of the sigma—delta modulator. Therefore, at the output of the modulator, a very clean PWM signal is acquired for driving the power stage of the class-D amplifier. A sixth-order modulator is designed to balance the performance and the system clock speed. Fabricated in standard 0.18 μm CMOS technology, this class-D amplifier achieves 110 dB dynamic range, 100 dB signal-to-noise rate, and 0.0056% total harmonic distortion plus noise. (semiconductor integrated circuits)

  20. A 240W Monolithic Class-D Audio Amplifier Output Stage

    DEFF Research Database (Denmark)

    Nyboe, Flemming; Kaya, Cetin; Risbo, Lars;

    2006-01-01

    A single-channel class-D audio amplifier output stage outputs 240W undipped into 4Omega 0.1% open-loop THD+N allows using the device in a fully-digital audio signal path with no feedback. The output current capability is plusmn18A and the part is fabricated in a 0.4mum/1.8mum high-voltage Bi...

  1. Class D audio amplifiers for high voltage capacitive transducers

    DEFF Research Database (Denmark)

    Nielsen, Dennis

    implications of driving the non-linear transducer of the DEAP. 2-level modulated high voltage amplifiers driving the capacitive load of the DEAP transducer are addressed in chapter 4. An amplifier with fourth order output filter and full-state self-oscillating hysteresis based control loop is proposed...... on a silicone film. As a consequence a capacitive transducer emerges, which can be shaped into the loudspeaker membrane itself, rolled up into a transducer driving a membrane or being part of an active suspension system for the membrane. In order to document the full potential of the DEAP transducer, suitable....... Due to the similarities between the electrostatic loudspeaker and the DEAP transducer, the state-of-the-art has a special focus on amplifiers for electrostatic loudspeakers. Amplifiers for other type of capacitive transducers like piezoelectric ones are also considered. Finally the current state...

  2. Analisys of Current-Bidirectional Buck-Boost Based Automotive Switch-Mode Audio Amplifier

    DEFF Research Database (Denmark)

    Bolten Maizonave, Gert; Andersen, Michael A. E.; Kjærgaard, Claus;

    2011-01-01

    The following study was carried out in order to assess quantitatively the performance of the buck-boost converter when used as switch-mode audio amplifier. It comprises of, to begin with, the delimitation of design criteria based on the state-ofthe- art solution, which is based in a differential ...

  3. Carrier Distortion in Hysteretic Self-Oscillating Class-D Audio Power

    DEFF Research Database (Denmark)

    Høyerby, Mikkel Christian Kofod; Andersen, Michael A. E.

    2009-01-01

    and output is required, such as in audio power amplifiers or xDSL drivers. From an average-mode point of view, carrier distortion is shown to be caused by nonlinear variation of the hysteretic comparator input average voltage with the output average voltage. This easily causes total harmonic distortion......An important distortion mechanism in hysteretic self-oscillating (SO) class-D (switch mode) power amplifiers-–carrier distortion-–is analyzed and an optimization method is proposed. This mechanism is an issue in any power amplifier application where a high degree of proportionality between input...... figures in excess of 0.1–0.2%, inadequate for high-quality audio applications. Carrier distortion is shown to be minimized when the feedback system is designed to provide a triangular carrier (sliding) signal at the input of a hysteretic comparator. The proposed optimization method is experimentally...

  4. Single conversion audio amplifier and DC-AC converters with high performance and low complexity control scheme

    DEFF Research Database (Denmark)

    Poulsen, Søren; Andersen, Michael Andreas E.

    2004-01-01

    This paper proposes a novel control topology for a mains isolated single conversion audio amplifier and DC-AC converters. The topology is made for use in audio applications, and differs from prior art in terms of significantly reduced distortion as well as lower system complexity. The topology ca...

  5. High power RF solid state power amplifier system

    Science.gov (United States)

    Sims, III, William Herbert (Inventor); Chavers, Donald Gregory (Inventor); Richeson, James J. (Inventor)

    2011-01-01

    A high power, high frequency, solid state power amplifier system includes a plurality of input multiple port splitters for receiving a high-frequency input and for dividing the input into a plurality of outputs and a plurality of solid state amplifier units. Each amplifier unit includes a plurality of amplifiers, and each amplifier is individually connected to one of the outputs of multiport splitters and produces a corresponding amplified output. A plurality of multiport combiners combine the amplified outputs of the amplifiers of each of the amplifier units to a combined output. Automatic level control protection circuitry protects the amplifiers and maintains a substantial constant amplifier power output.

  6. NASA developments in solid state power amplifiers

    Science.gov (United States)

    Leonard, Regis F.

    1990-01-01

    Over the last ten years, NASA has undertaken an extensive program aimed at development of solid state power amplifiers for space applications. Historically, the program may be divided into three phases. The first efforts were carried out in support of the advanced communications technology satellite (ACTS) program, which is developing an experimental version of a Ka-band commercial communications system. These first amplifiers attempted to use hybrid technology. The second phase was still targeted at ACTS frequencies, but concentrated on monolithic implementations, while the current, third phase, is a monolithic effort that focusses on frequencies appropriate for other NASA programs and stresses amplifier efficiency. The topics covered include: (1) 20 GHz hybrid amplifiers; (2) 20 GHz monolithic MESFET power amplifiers; (3) Texas Instruments' (TI) 20 GHz variable power amplifier; (4) TI 20 GHz high power amplifier; (5) high efficiency monolithic power amplifiers; (6) GHz high efficiency variable power amplifier; (7) TI 32 GHz monolithic power amplifier performance; (8) design goals for Hughes' 32 GHz variable power amplifier; and (9) performance goals for Hughes' pseudomorphic 60 GHz power amplifier.

  7. Solid state, S-band, power amplifier

    Science.gov (United States)

    Digrindakis, M.

    1973-01-01

    The final design and specifications for a solid state, S-band, power amplifier is reported. Modifications from a previously proposed design were incorporated to improve efficiency and meet input overdrive and noise floor requirements. Reports on the system design, driver amplifier, power amplifier, and voltage and current limiter are included along with a discussion of the testing program.

  8. low pump power photonic crystal fibre amplifiers

    DEFF Research Database (Denmark)

    Hougaard, Kristian G.; Broeng, Jes; Bjarklev, Anders Overgaard

    2003-01-01

    Designs of low pump power optical amplifiers, based on photonic crystal fibres are presented. The potential of these fibre amplifiers is investigated, and it is demonstrated that such amplifiers may deliver gains of more than 15 dB at 1550 nm with less than 1 mW of optical pump power....

  9. Class D audio amplifier with 4th order output filter and self-oscillating full-state hysteresis based feedback driving capacitive transducers

    DEFF Research Database (Denmark)

    Nielsen, Dennis; Knott, Arnold; Andersen, Michael A. E.

    2014-01-01

    A practical solution is presented for the design of a non-isolated high voltage DC/AC power converter. The converter is intended to be used as a class D audio amplifier for a Dielectric Electro Active Polymer (DEAP) transducer. A simple and effective hysteretic control scheme for the converter (b...... (buck with fourth- order output filter) is developed and analyzed. The proposed design is verified experimentally by a 125 VAR prototype amplifier, capable of delivering a peak output voltage of 240 V within the frequency range of 100 Hz – 3.5 kHz. A peak efficiency of 87 % is reported....

  10. HIGH AVERAGE POWER OPTICAL FEL AMPLIFIERS

    International Nuclear Information System (INIS)

    Historically, the first demonstration of the optical FEL was in an amplifier configuration at Stanford University [l]. There were other notable instances of amplifying a seed laser, such as the LLNL PALADIN amplifier [2] and the BNL ATF High-Gain Harmonic Generation FEL [3]. However, for the most part FELs are operated as oscillators or self amplified spontaneous emission devices. Yet, in wavelength regimes where a conventional laser seed can be used, the FEL can be used as an amplifier. One promising application is for very high average power generation, for instance FEL's with average power of 100 kW or more. The high electron beam power, high brightness and high efficiency that can be achieved with photoinjectors and superconducting Energy Recovery Linacs (ERL) combine well with the high-gain FEL amplifier to produce unprecedented average power FELs. This combination has a number of advantages. In particular, we show that for a given FEL power, an FEL amplifier can introduce lower energy spread in the beam as compared to a traditional oscillator. This properly gives the ERL based FEL amplifier a great wall-plug to optical power efficiency advantage. The optics for an amplifier is simple and compact. In addition to the general features of the high average power FEL amplifier, we will look at a 100 kW class FEL amplifier is being designed to operate on the 0.5 ampere Energy Recovery Linac which is under construction at Brookhaven National Laboratory's Collider-Accelerator Department

  11. Linearisation of RF Power Amplifiers

    DEFF Research Database (Denmark)

    Nielsen, Per Asbeck

    2001-01-01

    linearisation systems with focus on polar modulation feedback, and a chip oriented part focusing on integrating of separate building blocks of the system on a chip. The system oriented part of this thesis deals with analog feedback linearisation systems. The Polar modulation feedback system is compared with the...... more traditional Cartesian modulation feedback system in terms of loop settlement and dependencies between the feedback signals. A method to calculate the distortion functions of the linearisation system (AM/AM and AM/PM)based on the distortion functions of the power amplifier is presented. Also the...... polar loop architecture and it’s suitability to modern digital transmitters is discussed. A proposal of an architecture that is suitable for digital transmitters, which means that it has an interface to the digital back-end, defined by low-pass signals in polar form, is presented. Simulation guidelines...

  12. Safe-commutation principle for direct single-phase AC-AC converters for use in audio power amplification

    DEFF Research Database (Denmark)

    Ljusev, Petar; Andersen, Michael Andreas E.

    2004-01-01

    This paper presents an alternative safe commutation principle for a single phase bidirectional bridge, for use in the new generation of direct single-stage AC-AC audio power amplifiers. As compared with the bridge commutation with load current or source voltage sensing, in this approach it is not...

  13. High-efficiency solid state power amplifier

    Science.gov (United States)

    Wallis, Robert E. (Inventor); Cheng, Sheng (Inventor)

    2005-01-01

    A high-efficiency solid state power amplifier (SSPA) for specific use in a spacecraft is provided. The SSPA has a mass of less than 850 g and includes two different X-band power amplifier sections, i.e., a lumped power amplifier with a single 11-W output and a distributed power amplifier with eight 2.75-W outputs. These two amplifier sections provide output power that is scalable from 11 to 15 watts without major design changes. Five different hybrid microcircuits, including high-efficiency Heterostructure Field Effect Transistor (HFET) amplifiers and Monolithic Microwave Integrated Circuit (MMIC) phase shifters have been developed for use within the SSPA. A highly efficient packaging approach enables the integration of a large number of hybrid circuits into the SSPA.

  14. Differential Passive Circuit Modelling with Pentapole Impedance Matrices Application to an Integrated Audio Switching Amplifier for Portable Devices

    OpenAIRE

    Mrad, Roberto; Morel, Florent; Pillonnet, Gael; Vollaire, Christian; Labrousse, Denis

    2011-01-01

    In this paper a novel method to model the passive parts of differential output system is presented. This approach, based on impedance matrices, models conducted EMI and takes into account component non-idealities. It is not only able to deal with common mode but also differential mode and with conversion between the two modes. This method is experimentally applied to the passive output part of an audio differential switching amplifier dedicated to mobile phone applications. Using a simple imp...

  15. Cathode-follower power amplifier

    International Nuclear Information System (INIS)

    In circular accelerators and particularly in storage rings it is essential that the total impedance, as seen by the beam, be kept below some critical value. A model of the accelerating system was built using a single-ended cathode-follower amplifier driving a ferrite-loaded cavity. The system operated at 234.5 kHz with a peak output voltage of +-10 kV on the gap. The dynamic output impedance, as measured on the gap, was < 15 ohms

  16. V-band IMPATT power amplifier

    Science.gov (United States)

    Schell, S. W.

    1985-09-01

    This program is the result of the continuing demand and future requirement for a high data rate 60-GHz communications link. A reliable solid-state transmitter which delivers the necessary power over a wide bandwidth using the present IMPATT diode technology required the development of combining techniques. The development of a 60-GHz IMPATT power combiner amplifier is detailed. The results form a basis from which future wideband, high-power IMPATT amplifiers may be developed. As a result, several state-of-the-art advancements in millimeter-wave components technology were achieved. Specific achievements for the amplifier integration were: development of a nonresonant divider/combiner circuit; reproducible multiple junction circulator assemblies; and reliable high power 60-GHz IMPATT diodes. The various design approaches and tradeoffs which lead to the final amplifier configuration are discussed. A detailed circuit design is presented for the various amplifier components, and the conical line combiner, radial line combiner, and circulator development are discussed. The performance of the amplifier, the overall achievement of the program, the implications of the results, and an assessment of future development needs and recommendations are examined.

  17. The 60 GHz solid state power amplifier

    Science.gov (United States)

    Mcclymonds, J.

    1991-01-01

    A new amplifier architecture was developed during this contract that is superior to any other solid state approach. The amplifier produced 6 watts with 4 percent efficiency over a 2 GHz band at 61.5 GHz. The unit was 7 x 9 x 3 inches in size, 5.5 pounds in weight, and the conduction cooling through the baseplate is suitable for use in space. The amplifier used high efficiency GaAs IMPATT diodes which were mounted in 1-diode circuits, called modules. Eighteen modules were used in the design, and power combining was accomplished with a proprietary passive component called a combiner plate.

  18. Laser Cooled High-Power Fiber Amplifier

    OpenAIRE

    Nemova, Galina

    2009-01-01

    A theoretical model for laser cooled continuous-wave fiber amplifier is presented. The amplification process takes place in the Tm3+-doped core of the fluoride ZBLAN (ZrF4-BaF2-LaF3-AlF3-NaF) glass fiber. The cooling process takes place in the Yb3+:ZBLAN fiber cladding. It is shown that for each value of the pump power and the amplified signal there is a distribution of the concentration of the Tm3+ along the length of the fiber amplifier, which provides its athermal operation. The influence ...

  19. Safe-commutation principle for direct single-phase AC-AC converters for use in audio power amplification

    Energy Technology Data Exchange (ETDEWEB)

    Ljusev, P.; Andersen, Michael A.E.

    2005-07-01

    This paper presents an alternative safe commutation principle for a single phase bidirectional bridge, for use in the new generation of direct single-stage AC-AC audio power amplifiers. As compared with the bridge commutation with load current or source voltage sensing, in this approach it is not required to do any measurements, thus making it more reliable. Initial testing made on the prototype prove the feasibility of the approach. (au)

  20. Pulsed ti: sapphire laser power amplifier

    International Nuclear Information System (INIS)

    We have demonstrated an all solid state Ti:Sapphire laser system consisting of a power oscillator and single pass amplifier. The electrical-to-optical efficiency far exceeds that of the current CW systems. The pump lasers have lower capital and operating costs than the Argon-ion laser. In the future, we plan to scale the output power to higher levels by adding a fourth pump laser and improving the output power of the current pump lasers. Modeling results suggest that a large increase in efficiency can be realized by improving the beam quality of the pump lasers, even at the cost of reduced output power. We will explore this option by adding apertures to the cavity and/or reducing the rod diameter along with optimizing the resonator design. Other improvements in efficiency which will be investigated include double passing the amplifier for better extraction. To complete this work, the laser system will be converted into a two-stage amplifier. A narrow band, lower power oscillator currently under development will be injected in to the amplifier to study the extraction and efficiency characteristics of the amplifier throughout the tuning range of Ti:Sapphire. Detailed beam quality measurements will also be made. Other work will include doubling the narrow band output for materials processing applications

  1. High power single-frequency Innoslab amplifier.

    Science.gov (United States)

    Han, Ke-Zhen; Ning, Jian; Zhang, Bai-Tao; Wang, Yi-Ran; Zhang, Hai-Kun; Nie, Hong-Kun; Sun, Xiao-Li; He, Jing-Liang

    2016-07-10

    A laser diode array (LDA) end-pumped continuous-wave single-frequency Innoslab amplifier has been demonstrated. The Gaussian ray bundle method was used to model the light propagation in the Innoslab amplifier for the first time to the best of our knowledge. With discrete reflectors, the maximum output of 60 W with a linewidth of 44 MHz was achieved under the pump power of 245 W, corresponding to the optical-optical efficiency of 24.5%. The beam quality factor M2 at the output power of 51 W in the horizontal and vertical direction was measured to be 1.4 and 1.3, respectively. The long-term power instability in 2 h was less than 0.25%. PMID:27409308

  2. Mixed-Signal Architectures for High-Efficiency and Low-Distortion Digital Audio Processing and Power Amplification

    Directory of Open Access Journals (Sweden)

    Pierangelo Terreni

    2010-01-01

    Full Text Available The paper addresses the algorithmic and architectural design of digital input power audio amplifiers. A modelling platform, based on a meet-in-the-middle approach between top-down and bottom-up design strategies, allows a fast but still accurate exploration of the mixed-signal design space. Different amplifier architectures are configured and compared to find optimal trade-offs among different cost-functions: low distortion, high efficiency, low circuit complexity and low sensitivity to parameter changes. A novel amplifier architecture is derived; its prototype implements digital processing IP macrocells (oversampler, interpolating filter, PWM cross-point deriver, noise shaper, multilevel PWM modulator, dead time compensator on a single low-complexity FPGA while off-chip components are used only for the power output stage (LC filter and power MOS bridge; no heatsink is required. The resulting digital input amplifier features a power efficiency higher than 90% and a total harmonic distortion down to 0.13% at power levels of tens of Watts. Discussions towards the full-silicon integration of the mixed-signal amplifier in embedded devices, using BCD technology and targeting power levels of few Watts, are also reported.

  3. High Power 35GHz Gyroklystron Amplifiers

    Science.gov (United States)

    Choi, Jin; McCurdy, A.; Wood, F.; Kyser, R.; Danly, B.; Levush, B.; Parker, R.

    1997-05-01

    High power coherent radiation sources at 35GHz are attractive for next generation high gradient particle accelerators. A multi-cavity gyroklystron amplifier is considered a promising candidate for high power millimeter wave generation. Experiments on two-cavity and three cavity gyroklystron amplifiers are underway to demonstrate a 140kW, 35GHz coherent radiation amplification. Though this power is low compared with that needed for colliders, many of the issues associated with the bandwidth of such devices can be addressed in the present experiments. High bandwidth is important to permit the rapid phase shifts required for RF pulse compression schemes presently under investigation. Large signal calculations (P.E. Latham, W. Lawson, V. Irwin, IEEE Trans. Plasma Sci., Vol. 22, No. 5, pp. 804-817, 1994.) predict that the two-cavity gyroklystron produces a peak power of 140kW, corresponding to 33% efficiency. Calculations also show that a stagger tuned three cavity circuit increases a bandwidth to more than 0.7%. Experimental results of the amplifier will be presented and compared with the theory.

  4. Integration of 31.6 MHz, 1 KW solid state RF power amplifier in the booster RF system

    International Nuclear Information System (INIS)

    Like the conventional high power RF amplifier of early age, RF amplifier for injector Booster Synchrotron of Indus complex was tetrode tube based high power RF power amplifier. A 1 kW RF power Amplifier based on the solid state technology has been designed developed, tested and commissioned in Booster RF system. In addition to traditional advantage of solid state amplifier over tube based MOSFET RF devices have rare chance of thermal runway and secondary break down.1 kW 31.613 MHz Solid state RF amplifier system was developed with 45% efficiency and -30dB second harmonic level. The basic building block is 250 watts RF power module combined together using Wilkinson type power combiner to get the 1 kW RF power. The installation of solid state RF power Amplifier has not only improved the efficiency and eliminated the high voltage problems but has also brought down the audio noise which was there in earlier air cooled tetrode tube based RF power amplifier. 1 kW RF Amplifier has been successfully installed and integrated in the Booster Synchrotron to energise RF cavity with Amplitude control loop (ACL), Phase Control Loop (PCL) and frequency tuner loop in place. With new solid state RF amplifier in Booster, Indus-1 and Indus-2 Storage rings are being regularly operated at 120 mA at the rate 450 MeV and 100 mA. at the rate 2 GeV respectively. (author)

  5. CMOS RF Power Amplifiers for Wireless Communications

    OpenAIRE

    Fritzin, Jonas

    2011-01-01

    The wireless market has experienced a remarkable development and growth since the introduction of the first modern mobile phone systems, with a steady increase in the number of subscribers, new application areas, and higher data rates. As mobile phones and wireless connectivity have become consumer mass markets, the prime goal of the IC manufacturers is to provide low-cost solutions. The power amplifier (PA) is a key building block in all RF transmitters. To lower the costs and allow full int...

  6. Audio-visual synchrony and feature-selective attention co-amplify early visual processing.

    Science.gov (United States)

    Keitel, Christian; Müller, Matthias M

    2016-05-01

    Our brain relies on neural mechanisms of selective attention and converging sensory processing to efficiently cope with rich and unceasing multisensory inputs. One prominent assumption holds that audio-visual synchrony can act as a strong attractor for spatial attention. Here, we tested for a similar effect of audio-visual synchrony on feature-selective attention. We presented two superimposed Gabor patches that differed in colour and orientation. On each trial, participants were cued to selectively attend to one of the two patches. Over time, spatial frequencies of both patches varied sinusoidally at distinct rates (3.14 and 3.63 Hz), giving rise to pulse-like percepts. A simultaneously presented pure tone carried a frequency modulation at the pulse rate of one of the two visual stimuli to introduce audio-visual synchrony. Pulsed stimulation elicited distinct time-locked oscillatory electrophysiological brain responses. These steady-state responses were quantified in the spectral domain to examine individual stimulus processing under conditions of synchronous versus asynchronous tone presentation and when respective stimuli were attended versus unattended. We found that both, attending to the colour of a stimulus and its synchrony with the tone, enhanced its processing. Moreover, both gain effects combined linearly for attended in-sync stimuli. Our results suggest that audio-visual synchrony can attract attention to specific stimulus features when stimuli overlap in space. PMID:26226930

  7. Development of 3 kW at 325 MHz solid-state RF power amplifier using four power amplifier modules

    Science.gov (United States)

    Ramarao, B. V.; Sonal, S.; Mishra, J. K.; Pande, M.; Singh, P.; Kumar, G.; Mukherjee, J.

    2014-01-01

    A high power solid-state RF power amplifier of 3 kW at 325 MHz has been developed using only four RF power amplifier modules of 850 W power output each. The design and characterization of RF power modules have been presented. A four way Wilkinson power combiner adds the output of four power amplifier modules with a total transmission loss of less than 6%. The combined power amplifier has a power gain of 20.2 dB at 1-dB compression point, and the corresponding output power is 2.8 kW at 325 MHz. The drain efficiency of the power amplifier is 65.3% at 3 kW. All the harmonics of this amplifier are below -40 dBc. The amplifier has better characteristics like fewer numbers of active devices per kilo watt, high efficiency, high gain, and ruggedness etc for RF accelerator applications.

  8. Comparative Study of Si and SiC MOSFETs for High Voltage Class D Audio Amplifiers

    DEFF Research Database (Denmark)

    Nielsen, Dennis; Knott, Arnold; Andersen, Michael A. E.

    2014-01-01

    MOSFETs of class D amplifiers, and significantly reduces the selection of suitable MOSFETs. As a consequence it is investigated, if Silicon-Carbide (SiC) MOSFETs could represent a valid alternative. The theory of pulse timing errors are revisited for the application of high voltage and capactive loaded...... class D amplifiers. It is shown, that SiC MOSFETs can compete with Si MSOFETs in terms of THD. Validation is done using simulations and a 500 V amplifier driving a 100 nF load. THD+N below 0.3 % is reported...

  9. Envelope tracking power amplifiers for wireless communications

    CERN Document Server

    Wang, Zhancang

    2014-01-01

    Envelope tracking technology is seen as the most promising efficiency enhancement technology for RF power amplifiers for 4G and beyond wireless communications. More and more organizations are investing and researching on this topic with huge potential in academic and commercial areas.This is the first book on the market to offer complete introduction, theory, and design considerations on envelope tracking for wireless communications. This resource presents you with a full introduction to the subject and covers underlying theory and practical design considerations.

  10. High Power Wideband Class-E Power Amplifier

    OpenAIRE

    Ortega González, Francisco Javier

    2010-01-01

    This letter shows a high-power, high-efficiency, wideband Class-E RF power amplifier designed upon the load admittance synthesis concept and built using an uncomplicated low-loss load network with a low loss wideband admittance transformer as the main component. It uses a power Silicon LDMOS transistor to provide up to 145 W at 28 V peak power, up to 86% drain efficiency over 35% fractional bandwidth (from 85 to 120 MHz) and 15.6 dB gain at peak power without any adjustments. These are clear ...

  11. Development of 3 kW at 325 MHz solid-state RF power amplifier using four power amplifier modules

    International Nuclear Information System (INIS)

    A high power solid-state RF power amplifier of 3 kW at 325 MHz has been developed using only four RF power amplifier modules of 850 W power output each. The design and characterization of RF power modules have been presented. A four way Wilkinson power combiner adds the output of four power amplifier modules with a total transmission loss of less than 6%. The combined power amplifier has a power gain of 20.2 dB at 1-dB compression point, and the corresponding output power is 2.8 kW at 325 MHz. The drain efficiency of the power amplifier is 65.3% at 3 kW. All the harmonics of this amplifier are below −40 dBc. The amplifier has better characteristics like fewer numbers of active devices per kilo watt, high efficiency, high gain, and ruggedness etc for RF accelerator applications. -- Highlights: • High gain power amplifier, power gain at 20 dB. • High efficiency amplifier, efficiency >65%. • Minimum number of modules per kilo watt power output. • Heat sink with modules on both side, high density

  12. Design of Class-E Radio Frequency Power Amplifier

    OpenAIRE

    Al-Shahrani, Saad Mohammed

    2000-01-01

    Power amplifiers (PA) are typically the most power-consuming building blocks of RF transceivers. Therefore, the design of a high-efficiency radio frequency power amplifier is the most obvious solution to overcoming the battery lifetime limitation in the portable communication systems. A power amplifierà ­s classes (A, AB, B, C, F, E, etc), and design techniques (Load-pull and large-signal S-parameters techniques) are presented. The design accuracy of class-A power amplifier based on the s...

  13. A highly linear power amplifier for WLAN

    Science.gov (United States)

    Jie, Jin; Jia, Shi; Baoli, Ai; Xuguang, Zhang

    2016-02-01

    A three-stage power amplifier (PA) for WLAN application in 2.4-2.5 GHz is presented. The proposed PA employs an adaptive bias circuit to adjust the operating point of the PA to improve the linearity of the PA. Two methods to short the 2nd harmonic circuit are compared in the area of efficiency and gain of the PA. The PA is taped out in the process of 2 μm InGaP/GaAs HBT and is tested by the evaluation board. The measured results show that 31.5 dB power gain and 29.3 dBm P1dB with an associated 40.4% power added efficiency (PAE) under the single tone stimulus. Up to 26.5 dBm output power can be achieved with an error vector magnitude (EVM) of lower than 3% under the 64QAM/OFDM WLAN stimulus. Project supported by the National Natural Science Foundation of China (No. 61201244) and the Natural Science Fund of SUES (No. E1-0501-14-0168).

  14. Systematic design of output filters for audio class-D amplifiers via Simplified Real Frequency Technique

    Science.gov (United States)

    Hintzen, E.; Vennemann, T.; Mathis, W.

    2014-11-01

    In this paper a new filter design concept is proposed and implemented which takes into account the complex loudspeaker impedance. By means of techniques of broadband matching, that has been successfully applied in radio technology, we are able to optimize the reconstruction filter to achieve an overall linear frequency response. Here, a passive filter network is inserted between source and load that matches the complex load impedance to the complex source impedance within a desired frequency range. The design and calculation of the filter is usually done using numerical approximation methods which are known as Real Frequency Techniques (RFT). A first approach to systematic design of reconstruction filters for class-D amplifiers is proposed, using the Simplified Real Frequency Technique (SRFT). Some fundamental considerations are introduced as well as the benefits and challenges of impedance matching between class-D amplifiers and loudspeakers. Current simulation data using MATLAB is presented and supports some first conclusions.

  15. Solid state ku-band power amplifier

    Science.gov (United States)

    Bowers, H. C.; Lockyear, W. H.

    1972-01-01

    The design, fabrication, and testing of two types of IMPATT diode reflection amplifiers and a transmission amplifier are given. The Ku-band IMPATT diode development is discussed. Circuitry and electrical performance of the final version of the Ku-band amplifier is described. Construction details and an outline and mounting drawing are presented.

  16. Modeling and design techniques for RF power amplifiers

    CERN Document Server

    Raghavan, Arvind; Laskar, Joy

    2008-01-01

    The book covers RF power amplifier design, from device and modeling considerations to advanced circuit design architectures and techniques. It focuses on recent developments and advanced topics in this area, including numerous practical designs to back the theoretical considerations. It presents the challenges in designing power amplifiers in silicon and helps the reader improve the efficiency of linear power amplifiers, and design more accurate compact device models, with faster extraction routines, to create cost effective and reliable circuits.

  17. X-Band, 17-Watt Solid-State Power Amplifier

    Science.gov (United States)

    Mittskus, Anthony; Stone, Ernest; Boger, William; Burgess, David; Honda, Richard; Nuckolls, Carl

    2005-01-01

    An advanced solid-state power amplifier that can generate an output power of as much as 17 W at a design operating frequency of 8.4 GHz has been designed and constructed as a smaller, lighter, less expensive alternative to traveling-wave-tube X-band amplifiers and to prior solid-state X-band power amplifiers of equivalent output power. This amplifier comprises a monolithic microwave integrated circuit (MMIC) amplifier module and a power-converter module integrated into a compact package (see Figure 1). The amplifier module contains an input variable-gain amplifier (VGA), an intermediate driver stage, a final power stage, and input and output power monitors (see Figure 2). The VGA and the driver amplifier are 0.5-m GaAs-based metal semiconductor field-effect transistors (MESFETs). The final power stage contains four parallel high-efficiency, GaAs-based pseudomorphic high-electron-mobility transistors (PHEMTs). The gain of the VGA is voltage-variable over a range of 10 to 24 dB. To provide for temperature compensation of the overall amplifier gain, the gain-control voltage is generated by an operational-amplifier circuit that includes a resistor/thermistor temperature-sensing network. The driver amplifier provides a gain of 14 dB to an output power of 27 dBm to drive the four parallel output PHEMTs, each of which is nominally capable of putting out as much as 5 W. The driver output is sent to the input terminals of the four parallel PHEMTs through microstrip power dividers; the outputs of these PHEMTs are combined by microstrip power combiners (which are similar to the microstrip power dividers) to obtain the final output power of 17 W.

  18. Solid-State Power Amplifier For 61.5 GHz

    Science.gov (United States)

    Powers, Michael K.; Mcclymonds, James; Vye, David; Arthur, Thomas

    1992-01-01

    Power amplifiers based on impact-avalanche-transit-time (IMPATT) diodes developed for operation in communication systems at frequencies near 60 GHz. Built in seven modular stages, power transferred through sections of waveguide and isolator/circulator assemblies. Intended as replacements for bulkier and heavier traveling-wave-tube amplifiers.

  19. Experimental demonstration of high power millimeter wave gyro-amplifiers

    Science.gov (United States)

    Blank, M.; Garven, M.; Calame, J. P.; Choi, J. J.; Danly, B. G.; Levush, B.; Nguyen, K.; Pershing, D. E.

    1999-05-01

    The Naval Research Laboratory is currently investigating gyro-amplifiers as high power, broadband sources for millimeter wave radars. A three-cavity Ka-band gyroklystron achieved 225 kW peak output power with 0.82% bandwidth. At W-band, several multi-cavity gyro-amplifiers have been experimentally demonstrated. A four-cavity gyroklystron amplifier has achieved 84 kW peak output power at 34% efficiency with 370 MHz bandwidth. A five-cavity gyroklystron demonstrated 72 kW peak output power with 410 MHz bandwidth and 50 dB saturated gain. For applications requiring greater bandwidth, gyrotwystron amplifiers are also under study. A four section W-band gyrotwystron demonstrated 50 kW peak output power at 925 MHz bandwidth. The results of recent Ka-band and W-band gyro-amplifier experiments and comparisons of measured data with predictions of theory are presented.

  20. Power Amplifier Design for E-band Wireless System Communications

    DEFF Research Database (Denmark)

    Hadziabdic, Dzenan; Krozer, Viktor; Johansen, Tom Keinicke

    2008-01-01

    E-band wireless communications will become important as the microwave backhaul for high-speed data transmission. One of the most critical components is the front-end power amplifier in this system. The paper analyzes different technologies with potential in the E-band frequency range and present a...... power amplifier design satisfying the E-band system specifications. The designed power amplifier achieves a maximum output power of ges 20 dBm with a state-of-the-art power-added efficiency of 15%. The power is realized using InP DHBT technology. To the best of our knowledge it is the highest output...... power and efficiency reported for an InP HBT power amplifier in this frequency range. The predicted power-added efficiency is higher than that of power amplifiers based on SiGe HBT and GaAs pHEMT technologies. The design shows the capabilities of InP DHBT for power amplifier applications as an...

  1. Status of solid-state power amplifiers development in BARC

    International Nuclear Information System (INIS)

    Various solid-state power amplifiers have been developed to meet the requirements of accelerator needs for BARC and its collaboration projects. These are mainly 352 and 325 MHz RF power amplifiers. The 352 MHz, RF power amplifier have been developed to feed the buncher cavity of the Low Energy High Intensity Proton Accelerator (LEHIPA). Whereas 325 MHz 3 kW and 7 kW solid- state power amplifiers have been designed under the IIFC-Fermilab collaboration. The same technologies will also be used for 200 MeV superconducting accelerator of ADS program. The paper present the technology details of the power amplifier modules, power combiners, dividers and sensors etc. The developed SSPAs are of 3 kW, 325 MHz and 10 kW 352 MHz. Both the power amplifiers have been tested on a 50 ohm load. The 3 kW SSPA has the drain efficiency of 65.3%. The four modules have the power output of 850 W each. This SSPA has the figure of merit of SSPAs (number of modules per kW) is 1.2. The 10 kW SSPA is mainly required to feed the buncher cavity of the LEHIPA. It is combination of 16 power modules of 800 W each at 352 MHz. (author)

  2. Cryogenic cooling for high power laser amplifiers

    OpenAIRE

    Perin J.P.; Millet F.; Divoky M.; Rus B.

    2013-01-01

    Using DPSSL (Diode Pumped Solid State Lasers) as pumping technology, PW-class lasers with enhanced repetition rates are developed. Each of the Yb YAG amplifiers will be diode-pumped at a wavelength of 940 nm. This is a prerequisite for achieving high repetition rates (light amplification duration 1 millisecond and repetition rate 10 Hz). The efficiency of DPSSL is inversely proportional to the temperature, for this reason the slab amplifier have to be cooled at a temperature in the range of 1...

  3. A 12 GHz solid state power amplifier, phase 1B

    Science.gov (United States)

    Bestwick, P. R.

    1986-05-01

    Attempts to develop a balanced amplifier developing 4 W power output at 12.6 GHz, with a gain of 3.5 dB are summarized. Calculation of the device large-signal conjugate match points, measurement of the points, design and tuning of single-ended amplifier, modules, and a bias insertion network are described. A Lange coupler and a termination for it are presented. The performance of the balanced amplifier, and that of a competing Fujitsu amplifier, are analyzed. The differences in device structure between the PRCL 4820 device and the Fujitsu device are assessed. The amplifier developed gives (at 1 dB gain compression) a gain of 2.4 dB and a power output of 3.2 dB. Difficulties stem from the use of the double-cell 4820 device, and of the Lange type quadrature couplers.

  4. 1.55 Micron High Peak Power Fiber Amplifier Project

    Data.gov (United States)

    National Aeronautics and Space Administration — In this proposal, we propose to demonstrate and build a 1.55 micron single frequency high energy and high peak power fiber amplifier by developing an innovative...

  5. Efficient development of highly linear MMIC power amplifiers

    OpenAIRE

    Bignamini, M.; Favre, G.; Meazza, A.; Pagani, M.; Palomba, F.; Sivverini, G.

    2001-01-01

    Highly linear power amplifiers are key components of high capacity radio transmitters. This paper describes the complete procedure we established to develop a family of new MMIC power amplifiers aimed at achieving state-of-the-art performance as needed for a new M-QAM microwave radio. A cost effective approach dedicated to volume production has been addressed. The most important experimental characteristics for each of the developed MMIC PAs are also reported in order to demostrate the effect...

  6. HFSS Simulation of Vacuum Tube RF Power Amplifiers

    CERN Document Server

    Zviagintsev, Vladimir

    2005-01-01

    Development and upgrade of rf power amplifiers require comprehensive calculations to predict and optimize various parameters of the system before hardware modifications are applied. ANSOFT HFSS code provides a powerful tool for 3D EM simulation of the amplifier output resonator comprising a vacuum tube as a passive element. Two examples of this kind of simulation applied for upgrade of the TRIUMF Cyclotron rf system are presented in this paper.

  7. A high-power compact regenerative amplifier FEL

    International Nuclear Information System (INIS)

    The Regenerative Amplifier FEL (RAFEL) is a new FEL approach aimed at achieving the highest optical power from a compact rf-linac FEL. The key idea is to feed back a small fraction (5 in single pass) wiggler to enable the FEL to reach saturation in a few passes. This paper summarizes the design of a high-power compact regenerative amplifier FEL and describes the first experimental demonstration of the RAFEL concept

  8. Behavioral modeling and linearization of RF power amplifiers

    CERN Document Server

    Wood, John

    2014-01-01

    Wireless voice and data communications have made great improvements, with connectivity now virtually ubiquitous. Users are demanding essentially perfect transmission and reception of voice and data. The infrastructure that supports this wide connectivity and nearly error-free delivery of information is complex, costly, and continually being improved.This resource describes the mathematical methods and practical implementations of linearization techniques for RF power amplifiers for mobile communications. This includes a review of RF power amplifier design for high efficiency operation. Readers

  9. Introduction to RF power amplifier design and simulation

    CERN Document Server

    Eroglu, Abdullah

    2015-01-01

    Introduction to RF Power Amplifier Design and Simulation fills a gap in the existing literature by providing step-by-step guidance for the design of radio frequency (RF) power amplifiers, from analytical formulation to simulation, implementation, and measurement. Featuring numerous illustrations and examples of real-world engineering applications, this book:Gives an overview of intermodulation and elaborates on the difference between linear and nonlinear amplifiersDescribes the high-frequency model and transient characteristics of metal-oxide-semiconductor field-effect transistorsDetails activ

  10. Cryogenic cooling for high power laser amplifiers

    International Nuclear Information System (INIS)

    Using DPSSL (Diode Pumped Solid State Lasers) as pumping technology, PW-class lasers with enhanced repetition rates are developed. Each of the Yb YAG amplifiers will be diode-pumped at a wavelength of 940 nm. This is a prerequisite for achieving high repetition rates (light amplification duration 1 millisecond and repetition rate 10 Hz). The efficiency of DPSSL is inversely proportional to the temperature, for this reason the slab amplifier have to be cooled at a temperature in the range of 100 K-170 K with a heat flux of 1 MW*m-2. This paper describes the thermo-mechanical analysis for the design of the amplification laser head, presents a preliminary proposal for the required cryogenic cooling system and finally outlines the gain of cryogenic operation for the efficiency of high pulsed laser. (authors)

  11. Cryogenic cooling for high power laser amplifiers

    Science.gov (United States)

    Perin, J. P.; Millet, F.; Divoky, M.; Rus, B.

    2013-11-01

    Using DPSSL (Diode Pumped Solid State Lasers) as pumping technology, PW-class lasers with enhanced repetition rates are developed. Each of the Yb YAG amplifiers will be diode-pumped at a wavelength of 940 nm. This is a prerequisite for achieving high repetition rates (light amplification duration 1 millisecond and repetition rate 10 Hz). The efficiency of DPSSL is inversely proportional to the temperature, for this reason the slab amplifier have to be cooled at a temperature in the range of 100 K-170 K with a heat flux of 1 MW*m-2. This paper describes the thermo-mechanical analysis for the design of the amplification laser head, presents a preliminary proposal for the required cryogenic cooling system and finally outlines the gain of cryogenic operation for the efficiency of high pulsed laser.

  12. Cryogenic cooling for high power laser amplifiers

    Directory of Open Access Journals (Sweden)

    Perin J.P.

    2013-11-01

    Full Text Available Using DPSSL (Diode Pumped Solid State Lasers as pumping technology, PW-class lasers with enhanced repetition rates are developed. Each of the Yb YAG amplifiers will be diode-pumped at a wavelength of 940 nm. This is a prerequisite for achieving high repetition rates (light amplification duration 1 millisecond and repetition rate 10 Hz. The efficiency of DPSSL is inversely proportional to the temperature, for this reason the slab amplifier have to be cooled at a temperature in the range of 100 K–170 K with a heat flux of 1 MW*m−2. This paper describes the thermo-mechanical analysis for the design of the amplification laser head, presents a preliminary proposal for the required cryogenic cooling system and finally outlines the gain of cryogenic operation for the efficiency of high pulsed laser.

  13. A heterogeneous multiprocessor architecture for low-power audio signal processing applications

    DEFF Research Database (Denmark)

    Paker, Ozgun; Sparsø, Jens; Haandbæk, Niels;

    2001-01-01

    This paper describes a low-power programmable DSP architecture that targets audio signal processing. The architecture can be characterized as a heterogeneous multiprocessor consisting of small and simple instruction set processors called mini-cores that communicate using message passing...

  14. The Gain Dependence of the Power Transient in Raman Amplifier

    Institute of Scientific and Technical Information of China (English)

    2003-01-01

    It is observed that the amplitude of the power transient overshoot depends on the gain of the amplifier when the input signal powers are the same. The other system parameters, such as the input pump power and fiber length, have no effects on it.

  15. High Power Performance of Rod Fiber Amplifiers

    DEFF Research Database (Denmark)

    Johansen, Mette Marie; Michieletto, Mattia; Kristensen, Torben;

    2015-01-01

    An improved version of the DMF rod fiber is tested in a high power setup delivering 360W of stable signal power. Multiple testing degrades the fiber and transverse modal instability threshold from >360W to ~290W.......An improved version of the DMF rod fiber is tested in a high power setup delivering 360W of stable signal power. Multiple testing degrades the fiber and transverse modal instability threshold from >360W to ~290W....

  16. Development of High Power Microwave and Millimeter Wave Gyroklystron Amplifiers

    Science.gov (United States)

    Han, W. K.; Baik, S. W.; Lee, S. H.; Choi, J. J.; Park, D. M.; Oh, J. H.; Yang, J. G.; Hwang, S. M.; Temkin, R.

    1999-11-01

    A design study of a 28GHz gyroklystron amplifier for application of ECR plasma heating at Hanbit has been completed. Numerical simulation codes predict that a stable amplifier radiation of 200kW is produced with a 54dB saturated gain and an electronic efficiency of 35 percent from a 70kV and 8.2A high power electron beam. Major experimental equipments including a high power modulator, a 2 Tesla superconducting magnet, and a double-anode magnetro-injection-gun have been procured and are expected to set up in laboratory by this fall. Fabrication of tube components is currently underway. Cold-tests of the rf components are presented. In addition, experiments on a 10GHz gyroklystron amplifier which is a scale-down version of 28GHz gyroklystron amplifier are planned in the near future.

  17. Improvement of out-of-band Behaviour in Switch-Mode Amplifiers and Power Supplies by their Modulation Topology

    DEFF Research Database (Denmark)

    Knott, Arnold

    2010-01-01

    Switch-mode power electronics is disturbing other electronic circuits by emission of electromagnetic waves and signals. To allow transmission of information, a set of regulatory rules (electromagnetic compatibility (EMC)) were created to limit this disturbance. To fulfill those rules in power...... electronics, shielding and filtering is required, which is limiting the size reduction. The motivation for this project was to find alternative ways to avoid trouble with interference of switch-mode power electronics and transmission and receiver circuits. An especial focus is given to audio power amplifiers...... will be put into perspective and self-oscillating amplifiers will be compared with external synchronized topologies. After that, solutions to the problem, which are widespread in industry will be given and explained (chapter 3). The challenges and advantages will be described. The improvement of the...

  18. Gas cooled disk amplifier approach to solid state average power

    International Nuclear Information System (INIS)

    Disk amplifiers have been used on almost all solid state laser systems of high energy, and, in principle, one simply has to cool the device to operate it at average power. To achieve the desired waste heat removal, gas is flowed across the disk surface. The authors show the basic gas flow geometry. They computationally and experimentally characterize the flow and its optical implications over regimes which far exceed the envisioned operating requirements of a working amplifier

  19. S-band class-F power amplifier with integrated switched mode power supply

    NARCIS (Netherlands)

    Bent, G. van der; Hek, A.P. de; Geurts, S.; Brouzes, H.; Vliet, F.E. van

    2012-01-01

    An S-band radar transmitter MMIC is reported containing a class-F power amplifier and a switched mode power supply. The integration of the power supply offers the possibility to optimize the power amplifier bias voltage for each individual device in a AESA antenna. This has several advantages such a

  20. Cryogenic cooling for high power laser amplifiers

    International Nuclear Information System (INIS)

    The Extreme Light Infrastructure (ELI) will be a new scientific European infrastructure devoted to scientific research in lasers field, dedicated to the investigation and applications of laser-matter interaction at the highest intensity level (more than 6 orders of magnitude higher than today’s laser intensity). The ELI project, a collaboration of 13 European countries, will comprise three branches: Ultra High Field Science that will explore laser-matter interaction, attosecond Laser Science designed to conduct temporal investigation of electron dynamics in atoms, molecules, plasmas and solids at attosecond scale, High Energy Beam Science devoted to the development and usage o f dedicated beam lines with ultra short pulses of high energy radiation. Using DPSSL (Diode Pumped Solid State Lasers) as pumping technology, PW-cIass lasers with enhanced repetition rates are developed. Each of the Yb YaG amplifiers will be diode-pumped at a wavelength of 940 nm. This is a prerequisite for achieving high repetition rates (light amplification duration 1 millisecond and repetition rate 10 Hz), The efficiency of DPSSL is inversely proportional to the temperature, for this reason the slab amplifier have to be cooled at a temperature in the range of 100K-170K with a heat flux of 1 MW*m-2. This paper describes the thermo-mechanical analysis for the design of the amplification laser head, presents a preliminary proposal for the required cryogenic cooling system and finally outlines the gain of cryogenic operation for the efficiency of high pulsed laser. (author)

  1. Cryogenic cooling for high power laser amplifiers

    International Nuclear Information System (INIS)

    The Extreme Light Infrastructure (ELI) will be a new scientific European infrastructure devoted to scientific research in lasers field, dedicated to the investigation and applications of laser-matter interaction at the highest intensity level (more than 6 orders of magnitude higher than today's laser intensity). The ELI project, a collaboration of 13 European countries, will comprise three branches: Ultra High Field Science that will explore laser-matter interaction, atto-second Laser Science designed to conduct temporal investigation of electron dynamics in atoms, molecules, plasmas and solids at atto-second scale, High Energy Beam Science devoted to the development and usage of dedicated beam lines with ultra short pulses of high energy radiation. Using DPSSL (Diode Pumped Solid State Lasers) as pumping technology, PW-class lasers with enhanced repetition rates are developed. Each of the Yb YaG amplifiers will be diode-pumped at a wavelength of 940 nm. This is a prerequisite for achieving high repetition rates (light amplification duration 1 millisecond and repetition rate 10 Hz). The efficiency of DPSSL is inversely proportional to the temperature, for this reason the slab amplifier have to be cooled at a temperature in the range of 100 K-170 K with a heat flux of 1 MW.m-2. This paper describes the thermo-mechanical analysis for the design of the amplification laser head, presents a preliminary proposal for the required cryogenic cooling system and finally outlines the gain of cryogenic operation for the efficiency of high pulsed laser. (authors)

  2. Embedded control system for high power RF amplifiers

    International Nuclear Information System (INIS)

    RF power devices are usually very sensitive to overheat and reflected RF power; hence a protective interlock system is required to be embedded with high power solid state RF amplifiers. The solid state RF amplifiers have salient features of graceful degradation and very low mean time to repair (MTTR). In order to exploit these features in favour of lowest system downtime, a real-time control system is embedded with high power RF amplifiers. The control system is developed with the features of monitoring, measurement and network publishing of various parameters, historical data logging, alarm generation, displaying data to the operator and tripping the system in case of any interlock failure. This paper discusses the design philosophy, features, functions and implementation details of the embedded control system. (author)

  3. High-power phase locking of a fiber amplifier array

    Science.gov (United States)

    Shay, T. M.; Baker, J. T.; Sanchez, A. D.; Robin, C. A.; Vergien, C. L.; Zeringue, C.; Gallant, D.; Lu, Chunte A.; Pulford, Benjamin; Bronder, T. J.; Lucero, Arthur

    2009-02-01

    We report high power phase locked fiber amplifier array using the Self-Synchronous Locking of Optical Coherence by Single-detector Electronic-frequency Tagging technique. We report the first experimental results for a five element amplifier array with a total locked power of more than 725-W. We will report on experimental measurements of the phase fluctuations versus time when the control loop is closed. The rms phase error was measured to be λ/60. Recent results will be reported. To the best of the authors' knowledge this is the highest fiber laser power to be coherently combined.

  4. Amplified spontaneous emission pulses for high-power supercontinuum generation

    Directory of Open Access Journals (Sweden)

    Huan Huan Liu

    2016-03-01

    Full Text Available The authors demonstrate an incoherent light source based on a reflective semiconductor optical amplifier as pump for high-power supercontinuum generation for the first time. The obtained power level is about 160 mW and 20 dB spectral bandwidth is around 170 nm.

  5. Optical Amplifier Based Space Solar Power

    Science.gov (United States)

    Fork, Richard L.

    2001-01-01

    The objective was to design a safe optical power beaming system for use in space. Research was focused on identification of strategies and structures that would enable achievement near diffraction limited optical beam quality, highly efficient electrical to optical conversion, and high average power in combination in a single system. Efforts centered on producing high efficiency, low mass of the overall system, low operating temperature, precision pointing and tracking capability, compatibility with useful satellite orbits, component and system reliability, and long component and system life in space. A system based on increasing the power handled by each individual module to an optimum and the number of modules in the complete structure was planned. We were concerned with identifying the most economical and rapid path to commercially viable safe space solar power.

  6. Experiments of High Power 35GHz Gyro-Klystron Amplifiers

    Science.gov (United States)

    Choi, Jin; McCurdy, A.; Wood, F.; Kyser, R.; Danly, B.; Levush, B.; Calame, J.; Parker, R.

    1997-11-01

    Experiments on a two-cavity gyroklystron amplifier operating at 35GHz were successfully carried out. The amplifier produced a saturated radiation power of 210kW which corresponds to an efficiency of 37% and a gain of 23.6dB. The experimental results are in good agreement with predicted performance from non-linear gyroklystron codes, MAGYKL and MAGY. Experiments on a staggered tuned three-cavity gyroklystron amplifier is currently underway to demonstrate a high gain and wideband rf amplification. Simulations on the three-cavity gyroklystron circuit predict an instantaneous bandwidth of 0.9% and a gain of 35dB. Experimental results of the amplifiers will be presented.

  7. 5 Watt GaN HEMT Power Amplifier for LTE

    OpenAIRE

    Niotaki, K.; Collado, A.; Georgiadis, A.; Vardakas, J.

    2014-01-01

    This work presents the design and implementation of a stand-alone linear power amplifier at 2.4 GHz with high output power. A GaN HEMT transistor is selected for the design and implementation of the power amplifier. The device exhibits a gain of 11.7 dB and a drain efficiency of 39% for an output power of 36.7 dBm at 2.4 GHz for an input power of 25dBm. The carrier to intermodulation ratio is better than 25 dB for a two tone input signal of 25 dBm of total power and a spacing of 5 MHz. The fa...

  8. Solid-state microwave high-power amplifiers

    CERN Document Server

    Sechi, Franco

    2009-01-01

    This practical resource offers expert guidance on the most critical aspects of microwave power amplifier design. This comprehensive book provides descriptions of all the major active devices, discusses large signal characterization, explains all the key circuit design procedures. Moreover you gain keen insight on the link between design parameters and technological implementation, helping you achieve optimal solutions with the most efficient utilization of available technologies. The book covers a broad range of essential topics, from requirements for high-power amplifiers, device models, phas

  9. PHEMT Distributed Power Amplifier Adopting Broadband Impedance Transformer

    DEFF Research Database (Denmark)

    Narendra, K.; Limiti, E.; Paoloni, C.; Zhurbenko, Vitaliy

    2013-01-01

    A non-uniform drain line distributed power amplifier (DPA) employing a broadband impedance transformer is presented. The DPA is based on GaAs PHEMT technology. The impedance transformer employs asymmetric coupled lines and transforms a low output impedance of the amplifier to a standard 50 Ω...... transmission line. The output power of approximately 600 mW, with an associated gain of 9 dB and PAE greater than 30 percent, is demonstrated in the frequency range from 10 to 1800 MHz....

  10. Solid-state RF power amplifiers development at BARC

    International Nuclear Information System (INIS)

    The paper presents the recent developments on solid- RF power amplifiers (SSRFPA) at Bhabha Atomic Research Centre (BARC). Recent developments on solid-state RF power amplifier modules using LDMOS devices higher power output (>800) per module, high power gain (∼20 dB), and moderate DC to RF conversion efficiency (>65%). RF power combiners at various outputs (1-10 kW) at arbitrary input ports have developed. Integral power amplifiers at 325 and 352 MHz have been designed for 1, 3, 5 and 7 kW output. It also includes the 270 W, 352 MHz driver of 1 MW klystron based high power RF system. This SSRFPA has power gain of 22 dB and drain efficiency of 63%. Another RF generator of 300 W, 100 MHz has been specifically developed for RF ion-source of 14 MeV generator. The RF generator has 71 % efficiency. The paper presents details and test results of all the SSRFPA developments. (author)

  11. Biasing Circuits for Voltage Controlled GSM Power Amplifiers

    OpenAIRE

    van Bezooijen, André; Prikhodko, Dima; Van Roermund, A.H.M.

    2003-01-01

    In GSM phones voltage controlled power amplifiers are used to vary the output power.Inaccuracies in output power levels are predominantly caused by drift in PA gain over temperature and input power.In this paper we present biasing circuits that implement an inherently accurate gain control curve.These circuits are based on temperature stabilised V/I-converters and current mirrors.Applying current driven biasing of the first RF-stage reduces the input power dependency of the gain.Measurements ...

  12. Quantum dot amplifiers with high output power and low noise

    DEFF Research Database (Denmark)

    Berg, Tommy Winther; Mørk, Jesper

    2003-01-01

    Quantum dot semiconductor optical amplifiers have been theoretically investigated and are predicted to achieve high saturated output power, large gain, and low noise figure. We discuss the device dynamics and, in particular, show that the presence of highly inverted barrier states does not limit...

  13. High Power Combiner/Divider Design for Dual Band RF Power Amplifiers

    OpenAIRE

    Flattery, Kyle; Amin, Shoaib; Rönnow, Daniel; Mahamat, Yaya; Eroglu, Abdullah

    2015-01-01

    Design of low loss with an enhanced thermal profile power divider/combiner for high power dual-band Radio Frequency (RF) power amplifier applications is given. The practical implementation, low loss and substrate characteristics make this type of combiner ideal for high power microwave applications.  The combiner operational frequencies are chosen to operate at 900 MHz and 2.14 GHz, which are common frequencies for concurrent dual band RF power amplifiers. The analytical results are verified ...

  14. A low power and low distortion rail-to-rail input/output amplifier using constant current technique

    International Nuclear Information System (INIS)

    A rail-to-rail amplifier with constant transconductance, intended for audio processing, is presented. The constant transconductance is obtained by a constant current technique based on the input differential pairs operating in the weak inversion region. MOSFETs working in the weak inversion region have the advantages of low power and low distortion. The proposed rail-to-rail amplifier, fabricated in a standard 0.35 μm CMOS process, occupies a core die area of 75 x 183 μm2. Measured results show that the maximum power consumption is 85.37 μW with a supply voltage of 3.3 V and the total harmonic distortion level is 1.2% at 2 kHz. (semiconductor integrated circuits)

  15. A low power and low distortion rail-to-rail input/output amplifier using constant current technique

    Science.gov (United States)

    Yan, Liu; Yiqiang, Zhao; Shilin, Zhang; Hongliang, Zhao

    2011-04-01

    A rail-to-rail amplifier with constant transconductance, intended for audio processing, is presented. The constant transconductance is obtained by a constant current technique based on the input differential pairs operating in the weak inversion region. MOSFETs working in the weak inversion region have the advantages of low power and low distortion. The proposed rail-to-rail amplifier, fabricated in a standard 0.35 μm CMOS process, occupies a core die area of 75 × 183 μm2. Measured results show that the maximum power consumption is 85.37 μW with a supply voltage of 3.3 V and the total harmonic distortion level is 1.2% at 2 kHz.

  16. A High Power Amplifier for a Single Mode 1064 Laser

    Science.gov (United States)

    Stites, R. W.; O'Hara, K. M.

    2011-05-01

    We report on the construction of a high power amplifier system for a single mode 1064 nm laser. At the heart of this device is a 0.27% neodymium doped yttrium orthovanadate crystal that is double end pumped by two 30 Watt broadband diode arrays at 808 nm. For a 50 Watt TEM00 single freqency seed laser, we have observed an amplified power output in excess of 60 Watts for single pass configuration. A further increase in output power can be attained by retroreflecting the beam back through the crystal a second time. Such a device has direct application in the construction of optical lattices where high power single frequency lasers are required.

  17. A InGaP/GaAs HBT WLAN Power Amplifier with Power Detector

    OpenAIRE

    Lee, Kyung Ai; Lee, Dong Ho; Park, Hyun-Min; Cheon, Sang-Hoon; Park, Jae-Woo; Yoo, Hyung-mo; Hong, Songcheol

    2004-01-01

    A two-stage InGaP/GaAs heterojunction bipolar transistor (HBT) power amplifier is developed for WLAN 802.11b application. This is integrated with power detector that senses input power of power stage in order to decrease output power loss of detecting. The power amplifier delivers up to 26dBm output power with the maximum power-added efficiency (PAE) of 31% including consumption of the power detector under the supply voltage of 3.3V

  18. A novel power amplifier structure for RFID tag applications

    International Nuclear Information System (INIS)

    A novel matching method between the power amplifier (PA) and antenna of an active or semi-active RFID tag is presented. A PCB dipole antenna is used as the resonance inductor of a differential power amplifier. The total PA chip area is reduced greatly to only 240 × 70 μm2 in a 0.18 μm CMOS process due to saving two on-chip integrated inductors. Operating in class AB with a 1.8 V supply voltage and 2.45 GHz input signal, the PA shows a measured output power of 8 dBm at the 1 dB compression point. (semiconductor integrated circuits)

  19. On-Chip Buck-Boost Power Supply for Power Amplifiers

    OpenAIRE

    Oroug, Ole

    2006-01-01

    The increasing use of low voltage portable devices and growing requirements of functionalities embedded into such devices, efficient power management techniques are needed for longer battery life. The efficiency of battery-operated portable applications can be improved by increasing the efficiency of power amplifiers. By dynamically changing the supply voltage from the fixed battery supply using a DC-DC converter, the power amplifier can be operated with high efficiency during power back-off....

  20. Investigation of 7 GHz high power pulsed magnicon amplifier

    International Nuclear Information System (INIS)

    The magnicon is a microwave amplifier in which the beam is modulated by means of its circular deflection. Presented in this reports is a frequency doubling amplifier developed as a prototype of the microwave energy source for linear colliders. The magnicon is driven by a beam with a power of up to 100 MW and a microperveance of 0.83, the source of which is a thermionic electron gun with a very high convergence (up to 2000:1 in area). During the investigation the following results were obtained: a power of 30 MW, an efficiency of 35%, and a gain of 55 dB. This paper presents the tube design, problems faced and overcome during the investigation, and possible methods of further improving the device

  1. Investigation on Satellite-borne High-power Solid-state Power Amplifier Technology and Experiment

    OpenAIRE

    Wu Xiao-po; Zhao Hai-yang; Xi Song-tao

    2014-01-01

    Based on the research and development efforts of satellite-borne lumped solid-state transmitters, the design of a satellite-borne high-power microwave amplifier module is introduced. Focusing on satellite-borne applications, aspects of the high-power density thermal design, multipactor proof design, EMC design and so on, which are critical technologies for a solid-state power amplifier, are discussed. Subsequently, experiments are used to verify the concept.

  2. Investigation on Satellite-borne High-power Solid-state Power Amplifier Technology and Experiment

    Directory of Open Access Journals (Sweden)

    Wu Xiao-po

    2014-06-01

    Full Text Available Based on the research and development efforts of satellite-borne lumped solid-state transmitters, the design of a satellite-borne high-power microwave amplifier module is introduced. Focusing on satellite-borne applications, aspects of the high-power density thermal design, multipactor proof design, EMC design and so on, which are critical technologies for a solid-state power amplifier, are discussed. Subsequently, experiments are used to verify the concept.

  3. Numerical calculation of vacuum tube power amplifier mode of operation

    International Nuclear Information System (INIS)

    As result of INR RF system upgrade new vacuum tubes GI-71A and GI-57A were installed in the final and driver stages instead of GI-54A and GI-51A, manufacture of which had been stopped 20 years ago. New tubes are distinguished from former ones and a problem of optimization of the power amplifier mode of operation became the main one. This is connected not only with new type of the vacuum tubes, but also with the necessity of using, as much as possible, the former power amplifier basic hardware. The paper consists of two parts. In the first one a way of the PA vacuum tube load (equivalent resistance) calculation is considered. In the second one the model for determination of vacuum tube mode of operation is presented. By means of the model the vacuum tube specified in parameters, such as plate voltage, grid-cathode automatic bias, anode load etc, allow right now determining output parameters and efficiency of the power amplifier.

  4. Audio-frequency noise emissions from high-voltage overhead power lines

    International Nuclear Information System (INIS)

    This article discusses the noise-emissions caused by high-voltage overhead power lines that can occur under certain atmospheric conditions. These emissions, caused by electric discharges around the conductors, can achieve disturbing values, depending on the conditions prevailing at the time in question. The causes of the discharges are examined and the ionisation processes involved are looked at. The parameters influencing the discharges are discussed and measures that can be taken to reduce such audio-frequency emissions are looked at. The authors note that a reduction of peripheral field strengths can reduce emissions and that hydrophilic coatings can lead to faster reduction of such effects after rainfall

  5. Characterization of a high-power tapered semiconductor amplifier system

    CERN Document Server

    Voigt, D; Spreeuw, R J C; Van Linden van den Heuvell, H B

    2001-01-01

    We have characterized a semiconductor amplifier laser system which provides up to 200mW output after a single-mode optical fiber at 780nm wavelength. The system is based on a tapered semiconductor gain element, which amplifies the output of a narrow-linewidth diode laser. Gain and saturation are discussed as a function of operating temperature and injection current. The spectral properties of the amplifier are investigated with a grating spectrometer. Amplified spontaneous emission (ASE) causes a spectral background with a width of 4nm FWHM. The ASE background was suppressed to below our detection limit by a proper choice of operating current and temperature, and by sending the light through a single-mode optical fiber. The final ASE spectral density was less than 0.1nW/MHz, i.e. less than 0.2 % of the optical power. Related to an optical transition linewidth of $\\Gamma/2\\pi=6$ MHz for rubidium, this gives a background suppression of better than -82dB. An indication of the beam quality is provided by the fibe...

  6. Linear CMOS RF power amplifiers a complete design workflow

    CERN Document Server

    Ruiz, Hector Solar

    2013-01-01

    The work establishes the design flow for the optimization of linear CMOS power amplifiers from the first steps of the design to the final IC implementation and tests. The authors also focuses on design guidelines of the inductor's geometrical characteristics for power applications and covers their measurement and characterization. Additionally, a model is proposed which would facilitate designs in terms of transistor sizing, required inductor quality factors or minimum supply voltage. The model considers limitations that CMOS processes can impose on implementation. The book also provides diffe

  7. ACKA 500 WATT POWER AMPLIFIER FOR A 144 MHZ CHANNEL BASED ON A VHF PUSH-PULL POWER MOS TRANSISTOR

    OpenAIRE

    Agus Harjoko; Tri Wahyu Supardi

    2013-01-01

    In a wireless communication, a signal power amplifier is needed to carry signals over a long distance. Many signal amplifiers are made of tube as the amplifying component and as such they suffer low efficiency. This study presents results of the research on designing and implementing solid state 144MHz signal amplifier employing MOSFET BLF278 as the active component of the amplifier. The amplifier has an automatic activation switch, an input terminal, a 50 ohm impedance output terminal and a ...

  8. Power Efficiency Improvements through Peak-to-Average Power Ratio Reduction and Power Amplifier Linearization

    Directory of Open Access Journals (Sweden)

    Zhou G Tong

    2007-01-01

    Full Text Available Many modern communication signal formats, such as orthogonal frequency-division multiplexing (OFDM and code-division multiple access (CDMA, have high peak-to-average power ratios (PARs. A signal with a high PAR not only is vulnerable in the presence of nonlinear components such as power amplifiers (PAs, but also leads to low transmission power efficiency. Selected mapping (SLM and clipping are well-known PAR reduction techniques. We propose to combine SLM with threshold clipping and digital baseband predistortion to improve the overall efficiency of the transmission system. Testbed experiments demonstrate the effectiveness of the proposed approach.

  9. PULSE MODULATION POWER AMPLIFIER WITH ENHANCED CASCADE CONTROL METHOD

    DEFF Research Database (Denmark)

    1998-01-01

    A digital switching power amplifier with Multivariable Enhanced Cascade Controlled (MECC) includes a modulator, a switching power stage and a low pass filter. In the first preferred embodiment an enhanced cascade control structure local to the switching power stage is added, characterised by having...... a single local feedback path A (7) with a lowpass characteristic and local forward blocks B¿1? or B (3, 4). The leads to a much improved system with a very low sensitivity to errors in the switching power stage. In the second preferred embodiment of the invention the control structure is extended...... by adding/removing simple local (3) or global (1) forward path blocks. A third embodiment of the invention is a controlled self-oscillating pulse modulator, characterised by first a non-hysteresis comparator as modulator and second by a higher order oscillating loop realised in both forward path B1...

  10. Power Amplifier Linearization Techniques for 3rd Generation Handsets

    DEFF Research Database (Denmark)

    Nielsen, Troels Studsgaard

    Linearization is a systematic method for reducing an amplifier’s distortion. By distortion reduction, the linearizer allows the amplifier to produce more output power and thereby to operate at a higher level of efficiency for a given level of distortion. There exist a number of different Power...... put on the study, design, and implementation of a 5th order polynomial workfunction predistorter. To facilitate a realistic predistorter system study, an accurate PA behavioral model is developed from pulsed large signal S-parameters measurements of a real 3G-PP W-CDMA device. At the nominal 0d...... blocks: An RF variable gain amplifier, an envelope detector, and a polynomial workfunction. In a 3G-PP W-CDMA application with a real PA device, the linearizer is able to improve PA adjacent channel power ratio by 9.3dB and 1st alternate channel power ratio by 5.3dB. This immediate reduction in spectral...

  11. Thermal effects in high average power optical parametric amplifiers.

    Science.gov (United States)

    Rothhardt, Jan; Demmler, Stefan; Hädrich, Steffen; Peschel, Thomas; Limpert, Jens; Tünnermann, Andreas

    2013-03-01

    Optical parametric amplifiers (OPAs) have the reputation of being average power scalable due to the instantaneous nature of the parametric process (zero quantum defect). This Letter reveals serious challenges originating from thermal load in the nonlinear crystal caused by absorption. We investigate these thermal effects in high average power OPAs based on beta barium borate. Absorption of both pump and idler waves is identified to contribute significantly to heating of the nonlinear crystal. A temperature increase of up to 148 K with respect to the environment is observed and mechanical tensile stress up to 40 MPa is found, indicating a high risk of crystal fracture under such conditions. By restricting the idler to a wavelength range far from absorption bands and removing the crystal coating we reduce the peak temperature and the resulting temperature gradient significantly. Guidelines for further power scaling of OPAs and other nonlinear devices are given. PMID:23455291

  12. High-Efficiency and High-Power CMOS Power Amplifiers for Millimeter-Wave Applications /

    OpenAIRE

    Agah, Amir

    2013-01-01

    This research focuses on the analysis and design of stacked-FET power amplifiers for millimeter-wave applications. We analyze the loss mechanisms in the stacked-FET PA circuit to develop the fundamental bounds on PAE and output power. Two-stack power amplifiers are designed and implemented at 45 and 90GHz achieving 19 and 15.8dbm output power with 34% and 11% PAE, respectively. The gate resistance of the stacked-FET PA is demonstrated to be a dominant source of loss at high frequency. To over...

  13. Development of copper bromide laser master oscillator power amplifier system

    Indian Academy of Sciences (India)

    G N Tiwari; R K Mishra; R Khare; S V Nakhe

    2014-02-01

    Development of master oscillator power amplifier (MOPA) system of copper bromide laser (CBL) operating at 110 W average power is reported. The spectral distribution of power at green (510.6 nm) and yellow (578.2 nm) components in the output of a copper bromide laser is studied as a function of operating parameters. The electrical input power was varied from 2.6 to 4.3 kW, the pulse repetition frequency (PRF) was changed from 16 to 19 kHz, and the pressure of the buffer gas (neon) was kept fixed at 20 mbar. When the electrical input power was increased to 4.3 kW from 2.6 kW, the tube-wall temperature also increased to 488°C from 426°C but the ratio of the green to yellow power decreased to 1.53 from 3.73. The ratio of green to yellow power decreased to 1.53 from 1.63 when the PRF of the laser was increased to 19 kHz from 16 kHz. These observations are explained in terms of electron temperature, energy levels of transitions, and voltage and current waveforms across the laser head.

  14. Analysis and design of ΣΔ Modulators for Radio Frequency Switchmode Power Amplifiers

    OpenAIRE

    Podsiadlik, Tomasz

    2013-01-01

    Power amplifiers are an integral part of every basestation, macrocell, microcell and mobile phone, enabling data to be sent over the distances needed to reach the receiver’s antenna. While linear operation is needed for transmitting WCDMA and OFDM signals, linear operation of a power amplifier is characterized by low power efficiency, and contributes to unwanted power dissipation in a transmitter. Recently, a switchmode power amplifier operation was considered for reducing powe...

  15. Mismatch Calibration in LINC Power Amplifiers Using Modified Gradient Algorithm

    Directory of Open Access Journals (Sweden)

    Hosein Miar-Naimi

    2013-09-01

    Full Text Available One of the power amplifiers linearization technique is linear amplification with nonlinear components (LINC.The effects of phase and gain imbalances between two signal branches in LINC transmitters have been analyzed in this paper. Then a feedback path has been added to compensate this mismatches, using two complex gain in each path.This complex gains are controlled in a way to calibrate any gain and phase mismatches between two path using Modified Gradient Algorithm (MGA adaptively. The main advantages of this algorithm over other algorithms are zero residual error and fast convergence time. In the proposedarchitecture power amplifiers in each path are modeled as a complex gain which its phase and amplitude depend on input signal level. Many simulations have been performed to validate the proposed self calibrating LINC transmitter. Simulation results have confirmed the analyticalpredictions. According to simulation results the proposed structure has around 40 dB/Hz improvement in the first adjacent channel of the output signal spectrum.

  16. A 15 MHz bandwidth, 60 Vpp, low distortion power amplifier for driving high power piezoelectric transducers

    International Nuclear Information System (INIS)

    This paper presents the design and the realization of a linear power amplifier with large bandwidth (15 MHz) capable of driving low impedance ultrasonic transducers. The output current driving capability (up to 5 A) and low distortion makes it suitable for new research applications using high power ultrasound in the medical and industrial fields. The electronic design approach is modular so that the characteristics can be scaled according to specific applications and implementation details for the circuit layout are reported. Finally the characterization of the power amplifier module is presented

  17. Single conversion stage amplifier - SICAM

    Energy Technology Data Exchange (ETDEWEB)

    Ljusev, P.

    2005-12-15

    This Ph.D. thesis presents a thorough analysis of the so called SICAM - SIngle Converter stage AMplifier approach to building direct energy conversion audio power amplifiers. The mainstream approach for building isolated audio power amplifiers today consists of isolated DC power supply and Class D amplifier, which essentially represents a two stage solution, where each of the components can be viewed as separate and independent part. The proposed SICAM solution strives for direct energy conversion from the mains to the audio output, by dedicating the operation of the components one to another and integrating their functions, so that the final audio power amplifier represents a single-stage topology with higher efficiency, lower volume, less board space, lower component count and subsequently lower cost. The SICAM approach is both applicable to non-isolated and isolated audio power amplifiers, but the problems encountered in these two cases are different. Non-isolated SICAM solutions are intended for both AC mains-connected and battery-powered devices. In non-isolated mains-connected SICAMs the main idea is to simplify the power supply or even provide integrated power factor correction (PFC) functions, while still maintaining low component stress and good audio performance by generally decreasing the input voltage level to the Class D audio power amplifier. On the other hand, non-isolated battery-powered SICAMs have to cope with the ever changing battery voltage and provide output voltage levels which are both lower and higher than the battery voltage, while still being simple and single-stage energy conversion solutions. In isolated SICAMs the isolation transformer adjusts the voltage level on the secondary side to the desired level, so the main challenges here are decreasing the size of the magnetic core and reducing the number and size of bulky reactive components as much as possible. The main focus of this thesis is directed towards the isolated SICAMs and

  18. L-band AlGaN/GaN Power Amplifier with Protection Against Load Mismatch

    OpenAIRE

    Heijningen , M. van; Bent, G. van der; Houwen, E.H. van de; A Chowdhary; Vliet, F.E. van

    2013-01-01

    Solid-state power amplifiers need protection at the output to handle high reflections due to mismatch. Normally this is implemented by using a ferrite-based isolator. These are however large and bulky components. This paper presents a Gallium-Nitride power amplifier module with automatic protection against large reflections based on fold-back protection, by sensing the reflected power. Measurements have been performed on a 100 W L-band power amplifier module at full reflection (short at the o...

  19. EXPERIMENTAL STUDIES FOR DEVELOPMENT HIGH-POWER AUDIO SPEAKER DEVICES PERFORMANCE USING PERMANENT NdFeB MAGNETS SPECIAL TECHNOLOGY

    Directory of Open Access Journals (Sweden)

    Constantin D. STĂNESCU

    2013-05-01

    Full Text Available In this paper the authors shows the research made for improving high-power audio speaker devices performance using permanent NdFeB magnets special technology. Magnetic losses inside these audio devices are due to mechanical system frictions and to thermal effect of Joules eddy currents. In this regard, by special technology, were made conical surfaces at top plate and center pin. Analysing results obtained by modelling the magnetic circuit finite element method using electronic software package,was measured increase efficiency by over 10 %, from 1,136T to13T.

  20. RF power amplifier: pushing the boundaries of performance versus cost

    Science.gov (United States)

    De Souza, M. M.; Chevaux, N.; Rasheduzzaman, M.

    2012-10-01

    The Radio Frequency Power Amplifier lies at the heart of all modern day communication systems ranging from the cellular infrastructure market to broadcast, radar, medical, automotive and military to name a few. Transmission systems not only require substantial power at high frequencies, but they are also one of the most demanding of semiconductor applications on account of their requirements for efficiency and linearity, which inherently introduces a tradeoff during design. Three types of device technologies have been in typical use for RF power amplification: the VDMOS (at frequencies upto 1 GHz), the LDMOS (at frequencies upto 3.5 GHz), and more recently the Gallium Nitride HEMT, which extends the frequency range upto 5-7 GHz. As an emerging technology, GaN has huge potential, but its widespread use is still currently limited by the level of experience, absence of reliable device models and prices which are roughly (6-10 times that of silicon). This overview highlights the distinct features of the RF Power devices and touches upon the performance metrics of the above technologies (in silicon and GaN).

  1. Cascade Structure of Digital Predistorter for Power Amplifier Linearization

    Directory of Open Access Journals (Sweden)

    E. B. Solovyeva

    2015-12-01

    Full Text Available In this paper, a cascade structure of nonlinear digital predistorter (DPD synthesized by the direct learning adaptive algorithm is represented. DPD is used for linearization of power amplifier (PA characteristic, namely for compensation of PA nonlinear distortion. Blocks of the cascade DPD are described by different models: the functional link artificial neural network (FLANN, the polynomial perceptron network (PPN and the radially pruned Volterra model (RPVM. At synthesis of the cascade DPD there is possibility to overcome the ill conditionality problem due to reducing the dimension of DPD nonlinear operator approximation. Results of compensating nonlinear distortion in Wiener–Hammerstein model of PA at the GSM–signal with four carriers are shown. The highest accuracy of PA linearization is produced by the cascade DPD containing PPN and RPVM.

  2. SiGe HBTs Optimization for Wireless Power Amplifier Applications

    Directory of Open Access Journals (Sweden)

    Pierre-Marie Mans

    2010-01-01

    Full Text Available This paper deals with SiGe HBTs optimization for power amplifier applications dedicated to wireless communications. In this work, we investigate the fT-BVCEO tradeoff by various collector optimization schemes such as epilayer thickness and dopant concentration, and SIC and CAP characteristics. Furthermore, a new trapezoidal base Germanium (Ge profile is proposed. Thanks to this profile, precise control of Ge content at the metallurgical emitter-base junction is obtained. Gain stability is obtained for a wide range of temperatures through tuning the emitter-base junction Ge percent. Finally, a comprehensive investigation of Ge introduction into the collector (backside Ge profile is conducted in order to improve the fT values at high injection levels.

  3. NASA satellite communications application research. Phase 2: Efficient high power, solid state amplifier for EFH communications

    Science.gov (United States)

    Benet, James

    1993-01-01

    The final report describes the work performed from 9 Jun. 1992 to 31 Jul. 1993 on the NASA Satellite Communications Application Research (SCAR) Phase 2 program, Efficient High Power, Solid State Amplifier for EHF Communications. The purpose of the program was to demonstrate the feasibility of high-efficiency, high-power, EHF solid state amplifiers that are smaller, lighter, more efficient, and less costly than existing traveling wave tube (TWT) amplifiers by combining the output power from up to several hundred solid state amplifiers using a unique orthomode spatial power combiner (OSPC).

  4. Power scaling of supercontinuum seeded megahertz-repetition rate optical parametric chirped pulse amplifiers.

    Science.gov (United States)

    Riedel, R; Stephanides, A; Prandolini, M J; Gronloh, B; Jungbluth, B; Mans, T; Tavella, F

    2014-03-15

    Optical parametric chirped-pulse amplifiers with high average power are possible with novel high-power Yb:YAG amplifiers with kW-level output powers. We demonstrate a compact wavelength-tunable sub-30-fs amplifier with 11.4 W average power with 20.7% pump-to-signal conversion efficiency. For parametric amplification, a beta-barium borate crystal is pumped by a 140 W, 1 ps Yb:YAG InnoSlab amplifier at 3.25 MHz repetition rate. The broadband seed is generated via supercontinuum generation in a YAG crystal. PMID:24690803

  5. Full Band Millimeter-Wave Power-Combining Amplifier Using a Lossy Power-Combining Network

    Science.gov (United States)

    Xie, Xiaoqiang; Yang, Guiting; Zhang, Yunhua; Zhao, Xuan; She, Yuchen

    2016-04-01

    This paper presents a millimeter-wave broadband power-combining amplifier using a novel lossy waveguide-based power combiner. The lossy combiner has a performance of broadband low-loss combining symmetrically and has properties of good match and high isolation at and between ports, because lossy planar lines are embedded in the lossy combiner and even-mode excitations are weakened. The measured results show that the lossy combiners has a loss of about 0.14 dB and achieves reflection and isolation of about—15 dB in 26.5-40 GHz. And then, using the lossy combiner, a compact lossy waveguide-based four-way-combining network is fabricated. The lossy network has a measured loss of about 0.25 dB and achieves good improvements of match and isolation in the full Ka-band. The improvements can enhance stability of amplifying units when the lossy combining network used in multi-way power-combining amplifier. Using the lossy combining network, a solid-state power-combining amplifier is developed, and corresponding experimental results show that output power is more than 30 dBm and combining efficiency is more than 80 % in the full Ka-band.

  6. Linearization and efficiency enhancement of power amplifiers using digital predistortion

    Energy Technology Data Exchange (ETDEWEB)

    Safari, Nima

    2008-07-01

    Today, demand of higher spectral efficiency forces wireless communication systems to employ non-constant envelope modulation schemes such as Quadrature Amplitude Modulations (QAM), Code Division Multiple Access (CDMA) and Orthogonal Frequency-Division Multiplexing (OFDM) schemes. These modulation techniques generate signals with wide range of envelope fluctuation. This property makes these schemes sensitive to nonlinear amplifications. Nonlinearities introduced by Power Amplifiers (PA) cause both a distortion of the signal and an increased out of band output spectrum, which leads to a rise in adjacent channel interference. Thus, in order to ensure a high spectral efficiency and to avoid spectral regrowth, a linearization technique is required. Among all the linearization techniques, basedband Digital Predistortion (DPD) is one of the commonly used linearization techniques, which is characterized by robust operation, low implementation cost and high accuracy. In the first chapter of this thesis, an introduction on the motivation and necessity of using PA linearization techniques is presented. Digital Predistortion as a popular linearization technique aims to improve the efficiency and linearity of RF power amplifiers. The scope of the thesis, the goals to be achieved and the contributions are also discussed in chapter one. Chapter two, mainly discusses sample-by-sample updating algorithm in Digital Predistorters to adaptively linearize the PA memoryless nonlinearities. Look-up Table (LUT) and polynomial approaches are studied and implemented in Hardware using a test-bed provided by Nera Research. The experimental results together with a discussion are then given. A new DPD algorithm based on block estimation is proposed in chapter three to avoid realtime signal processing, reduce the complexity and also avoid the bad performance during the slow adaptation of adaptive the Adjacent Channel Power Ratio (ACPR) and the Error Vector Magnitude (EVM) requirements. In

  7. The solid-state Ku-band power amplifier

    Science.gov (United States)

    Geller, B. D.

    1975-01-01

    A survey of IMPATT diodes and negative resistance amplifiers is presented. The first phase of the amplifier effort is discussed in which a single diode reflection amplifier delivering 0.5 watt at 15 GHz with 10-dB gain over a 1-GHz band was developed. The design of a dominant mode resonant combiner is described along with the characterization of the IMPATT diodes. Results are given on the complete amplifier and on the thermal and graceful failure characteristics of the unit.

  8. Audio 2008: Audio Fixation

    Science.gov (United States)

    Kaye, Alan L.

    2008-01-01

    Take a look around the bus or subway and see just how many people are bumping along to an iPod or an MP3 player. What they are listening to is their secret, but the many signature earbuds in sight should give one a real sense of just how pervasive digital audio has become. This article describes how that popularity is mirrored in library audio…

  9. Repeated Evolution of Power-Amplified Predatory Strikes in Trap-Jaw Spiders.

    OpenAIRE

    Wood, HM; Parkinson, DY; Griswold, CE; Gillespie, RG; Elias, DO

    2016-01-01

    Small animals possess intriguing morphological and behavioral traits that allow them to capture prey, including innovative structural mechanisms that produce ballistic movements by amplifying power [1-6]. Power amplification occurs when an organism produces a relatively high power output by releasing slowly stored energy almost instantaneously, resulting in movements that surpass the maximal power output of muscles [7]. For example, trap-jaw, power-amplified mechanisms have been described for...

  10. High power amplifier pre-distorter based on neural-fuzzy systems for OFDM signals

    OpenAIRE

    Gil-Jiménez, Víctor P.; jabrane, younes; García-Armada, Ana; Ait Es Said, Brahim; Ait Ouahman, Abdellah

    2011-01-01

    In this paper, a novel High Power Amplifier (HPA) pre-distorter based on Adaptive Networks - Fuzzy Inference Systems (ANFIS) for Orthogonal Frequency Division Multiplexing (OFDM) signals is proposed and analyzed. Models of Traveling Wave Tube Amplifiers (TWTA) and Solid State Power Amplifiers (SSPA), both memoryless and with memory, have been used for evaluation of the proposed technique. After training, the ANFIS linearizes the HPA response and thus, the obtained signal is extremely similar ...

  11. DESIGN OF 2.4 GHz CMOS POWER AMPLIFIER FOR WIRELESS COMMUNICATION

    Directory of Open Access Journals (Sweden)

    Atul V. Jiwtode,

    2014-04-01

    Full Text Available This paper gives the information about designing the 2.4GHz CMOS power amplifier for wireless communication using 130nm technology. Previously work present different approaches for designing the CMOS power amplifier for different class with different technology. This paper proposed class-B power amplifier using 130 nm technology for gain more than 15dB.The class-B power amplifier is design and to meet the frequency response for 2.4 GHz with gain of 67.321dB, the proposed power supply work with the voltage from 1.3 to 3V, which means that we can used these design for battery aided hand held electronic moving or electronic mobile communication equipment .The proposed power amplifier is designed using ADS tool.

  12. TEDS Base Station Power Amplifier using Low-Noise Envelope Tracking Power Supply

    DEFF Research Database (Denmark)

    Høyerby, Mikkel Christian Wendelboe; Andersen, Michael A. E.

    2009-01-01

    This paper demonstrates a highly linear and efficient TETRA enhanced data service (TEDS) base-station RF power amplifier (RFPA). Based on the well-known combination of an envelope tracking (ET) power supply and a linear class-A/B RFPA, adequate adjacent channel power ratio (ACPR) and wideband noise...... performance is shown to be enabled only by further incorporating high-bandwidth Cartesian feedback (CFB) and using a low-noise ET power supply. It is demonstrated that CFB loop bandwidth is limited by modulator/demodulator/RF path group delay to around 2 MHz in the considered setup, and that there exists a...

  13. Digitally Controlled Envelope Tracking Power Supply for an RF Power Amplifier

    DEFF Research Database (Denmark)

    Jakobsen, Lars Tønnes; Andersen, Michael Andreas E.

    2007-01-01

    due to clock frequency quantization. An envelope tracking power supply for an RF Power Amplifier (RFPA) can help improve system efficiency by reducing the power consumption of the RFPA. To show the advantage of the DiSOM over traditional counter based Digital PWM modulators two designs were compared...... in both simulation and by experiment. The results shows that the DiSOM could give an increase in open loop bandwidth by more than a factor of two and an reduce the closed loop output impedance of the power supply by a factor of 5 at the output filter resonance frequency....

  14. A low power low noise amplifier for a 128 channel detector read-out integrated circuit

    International Nuclear Information System (INIS)

    This paper describes the design of a low power, low noise CMOS amplifier. The amplifier was designed using the folded cascade configuration and was implemented on a 3μm double polysilicon process. The amplifier is part of a 128 channel charge amplifier array chip for use in the read-out of radiation detectors with many channels. Aspects of the amplifier design such as band-width, pulse response, and noise are discussed and the effects of individual transistors are shown thereby relating circuit performance to process parameters; circuit test results are presented and radiation test results are included. (author)

  15. Low-power, enhanced-gain adaptive-biasing-based Operational Transconductance Amplifiers

    DEFF Research Database (Denmark)

    Moradi, Farshad

    A symmetrical PMOS OTA (Operational Transconductance Amplifier) is used to build an advanced rail-to-rail amplifier with improved DC-gain and reduced power consumption. By using the adaptive biasing circuit for two differential inputs, a low stand-by current can be achieved, reducing power consum...

  16. CMOS instrumentation amplifier with offset cancellation circuitry and high PSRR for low power application

    International Nuclear Information System (INIS)

    This paper presents the design and development of a CMOS instrumentation amplifier for biomedical application. The instrumentation amplifier possesses a very high power-supply rejection ratio (PSRR) and is able to operate at single supply voltage for low power application with improved performance compared to existing work. It also has a full CMOS implementation of offset cancellation circuitry. (author)

  17. A 90-W peak power GaN outphasing amplifier with optimum input signal conditioning

    NARCIS (Netherlands)

    Qureshi, J.H.; Pelk, M.J.; Marchetti, M.; Neo, W.C.E.; Gajadharsing, J.R.; Van der heijden, M.P.; De Vreede, L.C.N.

    2009-01-01

    A 90-W peak-power 2.14-GHz improved GaN outphasing amplifier with 50.5% average efficiency for wideband code division multiple access (W-CDMA) signals is presented. Independent control of the branch amplifiers by two in-phase/quadrature modulators enables optimum outphasing and input power leveling,

  18. On the power amplifier nonlinearity in MIMO transmit beamforming systems

    KAUST Repository

    Qi, Jian

    2012-03-01

    In this paper, single-carrier multiple-input multiple-output (MIMO) transmit beamforming (TB) systems in the presence of high-power amplifier (HPA) nonlinearity are investigated. Specifically, due to the suboptimality of the conventional maximal ratio transmission/maximal ratio combining (MRT/MRC) under HPA nonlinearity, we propose the optimal TB scheme with the optimal beamforming weight vector and combining vector, for MIMO systems with nonlinear HPAs. Moreover, an alternative suboptimal but much simpler TB scheme, namely, quantized equal gain transmission (QEGT), is proposed. The latter profits from the property that the elements of the beamforming weight vector have the same constant modulus. The performance of the proposed optimal TB scheme and QEGT/MRC technique in the presence of the HPA nonlinearity is evaluated in terms of the average symbol error probability and mutual information with the Gaussian input, considering the transmission over uncorrelated quasi-static frequency-flat Rayleigh fading channels. Numerical results are provided and show the effects on the performance of several system parameters, namely, the HPA parameters, numbers of antennas, quadrature amplitude modulation modulation order, number of pilot symbols, and cardinality of the beamforming weight vector codebook for QEGT. © 2012 IEEE.

  19. NONLINEAR CHARACTERIZATION OF CONCURRENT DUAL-BAND RF POWER AMPLIFIERS

    Institute of Scientific and Technical Information of China (English)

    Hui Ming; Liu Taijun; Ye Yan; Zhang Haili; Shen Dongya; Li Liang

    2012-01-01

    In this paper,the synchronous concurrent dual-band RF signal is used to drive the RF Power Amplifier (PA).The nonlinear characterization of a concurrent dual-band RF PA is discussed while two band signals in the dual-band are modulated by CDMA2000 and WCDMA signals.When the two band signals in the dual-band of the PA are modulated with the same signals,it is found that the nonlinearity of the PA can be expressed by any of the two corresponding baseband data.On the other hand,when the two band signals in the dual-band of the PA are modulated with two different signals,the PA nonlinearity cannot be characterized by any of the two corresponding baseband data.In this case,its nonlinearity has to be denoted by a composite signals consisting of the two baseband signals.Consequently,the requirements for the speed of the A/D converter can be largely reduced.The experimental results with CDMA2000 and WCDMA signals demonstrate the speed of the A/D converter required is only 30 M Sample Per Second (SaPS),but it will be at least 70 M SaPS for the conventional method.

  20. Impacts of seed power on amplification performance in pulsed double-clad fiber amplifier

    Institute of Scientific and Technical Information of China (English)

    Fangpei Zhang; Jianqiang Zhu; Zhijiang Wang; Qihong Lou; Jun Zhou; Hongming Zhao; Songtao Du; Jingxing Dong; Yunrong Wei; Bing He; Jinyan Li

    2008-01-01

    A pulsed master-oscillator fiber power amplifier system with near diffraction-limited output by use of China-made large-mode-area fiber and a (2 + 1) × 1 multimode combiner is reported. The effect of the seed power on the amplification performance is found. For the seed power, there exists a range within which the pulsed fiber amplifier can operate safely and reliably at a certain pump power. With the seed average power of 70 mW, the amplification performances of the fiber amplifier are investigated.

  1. Microwave dynamic large signal waveform characterization of advanced InGaP HBT for power amplifiers

    Energy Technology Data Exchange (ETDEWEB)

    Zhao Lixin; Jin Zhi; Liu Xinyu, E-mail: zhaolixin@ime.ac.c [Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029 (China)

    2009-12-15

    In wireless mobile communications and wireless local area networks (WLAN), advanced InGaP HBT with power amplifiers are key components. In this paper, the microwave large signal dynamic waveform characteristics of an advanced InGaP HBT are investigated experimentally for 5.8 GHz power amplifier applications. The microwave large signal waveform distortions at various input power levels, especially at large signal level, are investigated and the reasons are analyzed. The output power saturation is also explained. These analyses will be useful for power amplifier designs. (semiconductor devices)

  2. Microwave dynamic large signal waveform characterization of advanced InGaP HBT for power amplifiers

    International Nuclear Information System (INIS)

    In wireless mobile communications and wireless local area networks (WLAN), advanced InGaP HBT with power amplifiers are key components. In this paper, the microwave large signal dynamic waveform characteristics of an advanced InGaP HBT are investigated experimentally for 5.8 GHz power amplifier applications. The microwave large signal waveform distortions at various input power levels, especially at large signal level, are investigated and the reasons are analyzed. The output power saturation is also explained. These analyses will be useful for power amplifier designs. (semiconductor devices)

  3. W-band Solid State Power Amplifier for Remote Sensing Radars Project

    Data.gov (United States)

    National Aeronautics and Space Administration — High power, compact, reliable and affordable power amplifiers operating in the W-band (94 GHz region) are critical to realizing transmitters for many NASA missions...

  4. MMIC for High-Efficiency Ka-BAnd GaN Power Amplifiers (2007043) Project

    Data.gov (United States)

    National Aeronautics and Space Administration — This proposal addresses the need for high-efficiency, high-output power amplifiers operating in the Ka-band frequencies. For space communications, the power...

  5. Low Cost RF Amplifier for Community TV

    Science.gov (United States)

    Ch, Syafaruddin; Sasongko, Sudi Mariyanto Al; Made Budi Suksmadana, I.; Mustiko Okta Muvianto, Cahyo; Ariessaputra, Suthami

    2016-01-01

    he capability of television to deliver audio video makes this media become the most effective method to spread information. This paper presents an experiment of RF amplifier design having low-cost design and providing sufficient RF power particularly for community television. The RF amplifier consists of two stages of amplifier. The first stage amplifier was used to leverage output of TV modulator from 11dBm to enable to drive next stage amplifier. CAD simulation and fabrication were run to reach optimum RF amplifier design circuit. The associated circuit was made by determining stability circle, stability gain, and matching impedance. Hence, the average power of first stage RF amplifier was 24.68dBm achieved. The second stage used RF modules which was ready match to 50 ohm for both input and output port. The experiment results show that the RF amplifier may operate at frequency ranging from 174 to 230MHz. The average output power of the 2nd stage amplifier was 33.38 Watt with the overall gain of 20.54dB. The proposed RF amplifier is a cheap way to have a stable RF amplifier for community TV. The total budget for the designed RF amplifier is only a 1/5 compared to local design of final TV amplifier.

  6. Diode-Pumped High Energy and High Average Power All-Solid-State Picosecond Amplifier Systems

    OpenAIRE

    Jiaxing Liu; Wei Wang; Zhaohua Wang; Zhiguo Lv; Zhiyuan Zhang; Zhiyi Wei

    2015-01-01

    We present our research on the high energy picosecond laser operating at a repetition rate of 1 kHz and the high average power picosecond laser running at 100 kHz based on bulk Nd-doped crystals. With diode-pumped solid state (DPSS) hybrid amplifiers consisting of a picosecond oscillator, a regenerative amplifier, end-pumped single-pass amplifiers, and a side-pumped amplifier, an output energy of 64.8 mJ at a repetition rate of 1 kHz was achieved. An average power of 37.5 W at a repetition ra...

  7. Design and development of power supplies for high power IOT based RF amplifier

    International Nuclear Information System (INIS)

    Design, development, circuit topology, function of system components and key system specifications of different power supplies for biasing electrodes of Thales Inductive Output Tube (IOT) based high power RF amplifier are presented in this paper. A high voltage power supply (-30 kV, 3.2A dc) with fast (∼microsecond) crowbar protection circuit is designed, developed and commissioned at VECC for testing the complete setup. Other power supplies for biasing grid electrode (300V, 0.5A dc) and Ion Pump (3 kV, 0.1mA dc) of IOT are also designed, developed and tested with actual load. A HV Deck (60kV Isolation) is specially designed in house to place these power supplies which are floating at 30 kV. All these power supplies are powered by an Isolation Transformer (5 kVA, 60 kV isolation) designed and developed in VECC. (author)

  8. High-power arrays of quantum cascade laser master-oscillator power-amplifiers.

    Science.gov (United States)

    Rauter, Patrick; Menzel, Stefan; Goyal, Anish K; Wang, Christine A; Sanchez, Antonio; Turner, George; Capasso, Federico

    2013-02-25

    We report on multi-wavelength arrays of master-oscillator power-amplifier quantum cascade lasers operating at wavelengths between 9.2 and 9.8 μm. All elements of the high-performance array feature longitudinal (spectral) as well as transverse single-mode emission at peak powers between 2.7 and 10 W at room temperature. The performance of two arrays that are based on different seed-section designs is thoroughly studied and compared. High output power and excellent beam quality render the arrays highly suitable for stand-off spectroscopy applications. PMID:23481985

  9. Linear and nonlinear analysis of high-power rf amplifiers

    International Nuclear Information System (INIS)

    After a survey of the state variable analysis method the final amplifier for the CBA is analyzed taking into account the real beam waveshape. An empirical method for checking the stability of a non-linear system is also considered

  10. Diode-Pumped High Energy and High Average Power All-Solid-State Picosecond Amplifier Systems

    Directory of Open Access Journals (Sweden)

    Jiaxing Liu

    2015-12-01

    Full Text Available We present our research on the high energy picosecond laser operating at a repetition rate of 1 kHz and the high average power picosecond laser running at 100 kHz based on bulk Nd-doped crystals. With diode-pumped solid state (DPSS hybrid amplifiers consisting of a picosecond oscillator, a regenerative amplifier, end-pumped single-pass amplifiers, and a side-pumped amplifier, an output energy of 64.8 mJ at a repetition rate of 1 kHz was achieved. An average power of 37.5 W at a repetition rate of 100 kHz pumped by continuous wave laser diodes was obtained. Compact, stable and high power DPSS laser amplifier systems with good beam qualities are excellent picosecond sources for high power optical parametric chirped pulse amplification (OPCPA and high-efficiency laser processing.

  11. A high efficiency C-band internally-matched harmonic tuning GaN power amplifier

    Science.gov (United States)

    Lu, Y.; Zhao, B. C.; Zheng, J. X.; Zhang, H. S.; Zheng, X. F.; Ma, X. H.; Hao, Y.; Ma, P. J.

    2016-09-01

    In this paper, a high efficiency C-band gallium nitride (GaN) internally-matched power amplifier (PA) is presented. This amplifier consists of 2-chips of self-developed GaN high-electron mobility transistors (HEMTs) with 16 mm total gate width on SiC substrate. New harmonic manipulation circuits are induced both in the input and output matching networks for high efficiency matching at fundamental and 2nd-harmonic frequency, respectively. The developed amplifier has achieved 72.1% power added efficiency (PAE) with 107.4 W output power at 5 GHz. To the best of our knowledge, this amplifier exhibits the highest PAE in C-band GaN HEMT amplifiers with over 100 W output power. Additionally, 1000 hours' aging test reveals high reliability for practical applications.

  12. Empirical multichannel power consumption model for erbium-doped fiber amplifiers

    DEFF Research Database (Denmark)

    Saldaña Cercos, Silvia; de Paiva, Getulio E. R.; Argentato, Marcio Colazza;

    2015-01-01

    In this paper we report on the first experimental power consumption analysis and model of single and multi-stage booster erbium-doped fiber amplifiers (EDFAs) with automatic gain control (AGC), accounting for channel number dependency. Results show that the amount of channels being amplified...... simultaneously contributes significantly, up to 48%, to the total power consumption due to the circuitry used for controlling the EDFA. As the number of simultaneous amplified WDM channels in high capacity long and medium reach transmission links reflects closely traffic patterns generated by end-users, it is...... relevant to study channel number dependent power consumption for devising EDFA power efficient control and design....

  13. The Simulation Analysis of Nonlinear for a Power Amplifier with Memory Effects

    Directory of Open Access Journals (Sweden)

    Lv. Jinqiu

    2014-09-01

    Full Text Available For the nonlinear distortion problem of current power amplifiers (PAs with memory effects, we use goal programming to present a memoryless predistorter matrix model based on limiting baseband predistortion technique, and the normalized mean squared error (NMSE is limited in a satisfactory range while the output power is maximum. Then we propose a nonlinear power amplifier with memory effects based on back propagation neural network (BPNN with three tapped delay nodes and six single hidden layer nodes, which is single input - dual output. Simulation results show that the method proposed in this paper makes the experimental precision higher. Further, the linearization effect of power amplifiers becomes better.

  14. ACKA 500 WATT POWER AMPLIFIER FOR A 144 MHZ CHANNEL BASED ON A VHF PUSH-PULL POWER MOS TRANSISTOR

    Directory of Open Access Journals (Sweden)

    Agus Harjoko

    2013-01-01

    Full Text Available In a wireless communication, a signal power amplifier is needed to carry signals over a long distance. Many signal amplifiers are made of tube as the amplifying component and as such they suffer low efficiency. This study presents results of the research on designing and implementing solid state 144MHz signal amplifier employing MOSFET BLF278 as the active component of the amplifier. The amplifier has an automatic activation switch, an input terminal, a 50 ohm impedance output terminal and a bypass system for two way communication. This amplifier has been tested on frequencies between 144.00 MHz to 146.90 MHz in 100 KHz steps without adjusting the tuning. It is found that the signal amplifier delivers RF powers up to 500 watt at the working voltage of 48 volt with the efficiency of 77%. The amplifier has a Standing Wave Ratio (SWR of 1:1 when amplifying and 1.1:1.0 when in bypass mode. The signal amplifier has been tested successfully for radio communication between Sukoharjo in Central Jawa and Surabaya in East Jawa.

  15. 2.4GHZ Class AB power Amplifier For Healthcare Application

    OpenAIRE

    Cai, Wei; Huang, Liang; Wen, WuJie

    2016-01-01

    The objective of this research was to design a 2.4 GHz class AB Power Amplifier, with 0.18 um SMIC CMOS technology by using Cadence software, for health care applications. The ultimate goal for such application is to minimize the trade-offs between performance and cost, and between performance and low power consumption design. The performance of the power amplifier meets the specification requirements of the desired.

  16. Repeated Evolution of Power-Amplified Predatory Strikes in Trap-Jaw Spiders.

    Science.gov (United States)

    Wood, Hannah M; Parkinson, Dilworth Y; Griswold, Charles E; Gillespie, Rosemary G; Elias, Damian O

    2016-04-25

    Small animals possess intriguing morphological and behavioral traits that allow them to capture prey, including innovative structural mechanisms that produce ballistic movements by amplifying power [1-6]. Power amplification occurs when an organism produces a relatively high power output by releasing slowly stored energy almost instantaneously, resulting in movements that surpass the maximal power output of muscles [7]. For example, trap-jaw, power-amplified mechanisms have been described for several ant genera [5, 8], which have evolved some of the fastest known movements in the animal kingdom [6]. However, power-amplified predatory strikes were not previously known in one of the largest animal classes, the arachnids. Mecysmaucheniidae spiders, which occur only in New Zealand and southern South America, are tiny, cryptic, ground-dwelling spiders that rely on hunting rather than web-building to capture prey [9]. Analysis of high-speed video revealed that power-amplified mechanisms occur in some mecysmaucheniid species, with the fastest species being two orders of magnitude faster than the slowest species. Molecular phylogenetic analysis revealed that power-amplified cheliceral strikes have evolved four times independently within the family. Furthermore, we identified morphological innovations that directly relate to cheliceral function: a highly modified carapace in which the cheliceral muscles are oriented horizontally; modification of a cheliceral sclerite to have muscle attachments; and, in the power-amplified species, a thicker clypeus and clypeal apodemes. These structural innovations may have set the stage for the parallel evolution of ballistic predatory strikes. PMID:27068421

  17. Peak power tunable mid-infrared oscillator pumped by a high power picosecond pulsed fiber amplifier with bunch output

    Science.gov (United States)

    Wei, Kaihua; Guo, Yan; Lai, Xiaomin; Fan, Shanhui

    2016-07-01

    A high power mid-infrared optical parametric oscillator (OPO) with picosecond pulse bunch output is experimentally demonstrated. The pump source was a high power master oscillation power amplifier (MOPA) picosecond pulsed fiber amplifier. The seed of the MOPA was a gain-switched distributed Bragg reflector (DBR) laser diode (LD) with picosecond pulse operation at a high repetition rate. The seed laser was amplified to 50 W by two-stage pre-amplifiers and a large mode area (LMA) Yb fiber based power-amplifier. A fiber-pigtailed acousto-optic modulator with the first order diffraction transmission was inserted into the second pre-amplifier to form a picosecond pulse bunch train and to change the peak power simultaneously. The power-amplified pulse bunches were focused to pump a wavelength-tunable OPO for emitting high power mid-infrared laser. By adjusting the OPO cavity length, the maximum average idler powers obtained at 3.1, 3.3 and 3.5 μm were 7, 6.6 and 6.4 W respectively.

  18. 75 FR 3985 - Trade Regulation Rule Relating to Power Output Claims for Amplifiers Utilized in Home...

    Science.gov (United States)

    2010-01-26

    ...The Federal Trade Commission (``FTC'' or ``Commission'') has completed its regulatory review of its Trade Regulation Rule Relating to Power Output Claims for Amplifiers Utilized in Home Entertainment Products (``Amplifier Rule'' or ``Rule''), as part of the Commission's systematic review of all current Commission regulations and guides, and has determined to retain the Rule in its current......

  19. High power pulse amplification of ytterbium-doped double-clad fiber amplifier

    Institute of Scientific and Technical Information of China (English)

    Liping Chang; Wei Fan; Jialin Chen; Li Wang; Bai Chen; Zunqi Lin

    2007-01-01

    By solving a set of time-dependent equations, the characteristics of the ytterbium-doped double-clad fiber amplifier are presented. Besides the steady state in the fiber of the upper-state population, pump power and amplified spontaneous emission without the input signal, the dynamic characteristics of the high power Gaussian pulse amplification like the evolution of pulse waveform distortion, upper-state population distribution and stored energy and pulse energy of the amplifier under the forward and backward pump,are simulated. The relations between the output pulse energy of the amplifier and the different input pulse peak power or pump power are also discussed. The models and results can provide important guide for the design and optimization of the high power pulse amplification.

  20. A compact 500 MHz 4 kW Solid-State Power Amplifier for accelerator applications

    Science.gov (United States)

    Gaspar, M.; Pedrozzi, M.; Ferreira, L. F. R.; Garvey, T.

    2011-05-01

    We present the development of a compact narrow-band Solid-State Power Amplifier (SSPA). We foresee a promising application of solid-state amplifiers specifically in accelerators for new generation synchrotron light sources. Such a new technology has reached a competitive price/performance ratio and expected lifetime in comparison with klystron and IOT amplifiers. The increasing number of synchrotron light sources using 500 MHz as base frequency justifies the effort in the development of the proposed amplifier. Two different techniques are also proposed to improve the control and performance of these new distributed amplification systems which we call, respectively, complete distributed system and forced compression.

  1. A compact 500 MHz 4 kW Solid-State Power Amplifier for accelerator applications

    International Nuclear Information System (INIS)

    We present the development of a compact narrow-band Solid-State Power Amplifier (SSPA). We foresee a promising application of solid-state amplifiers specifically in accelerators for new generation synchrotron light sources. Such a new technology has reached a competitive price/performance ratio and expected lifetime in comparison with klystron and IOT amplifiers. The increasing number of synchrotron light sources using 500 MHz as base frequency justifies the effort in the development of the proposed amplifier. Two different techniques are also proposed to improve the control and performance of these new distributed amplification systems which we call, respectively, complete distributed system and forced compression.

  2. A compact high efficiency 8 kW 325 MHz power amplifier for accelerator applications

    Science.gov (United States)

    Mishra, Jitendra Kumar; Ramarao, B. V.; Pande, Manjiri M.; Singh, P.

    2014-11-01

    A solid state RF power amplifier (SSRFPA) has been designed and developed for 8 kW RF power at 325 MHz. The work was carried out to achieve high efficiency (over 70% efficiency), high gain and compact size for the amplifier module. The sub-components of this amplifier like a 1 kW amplifier module at 325 MHz, an 8-way RF power combiner rated for 8 kW RF power and a micro-strip based power divider have been designed and developed in-house. The size of the amplifier is miniaturized by incorporating innovative design techniques and proper selection of the substrate material in the input/output matching networks. Measured power gain and conversion efficiency of the solid state RF power amplifier module at 1.06 kW output is 21.7 dB and 73.2%, respectively. A coaxial line based 8-way Wilkinson power combiner has been designed and developed. Return loss of the combiner at the output (combined) port is 26.4 dB at 325 MHz. Transmission parameters of the combiner from each input (splitting) port to output port are 9.1 dB±0.15 dB. This amplifier uses a pre-driver of 20 W and a driver amplifier of 150 W. Total power gain and efficiency of 8 kW SSRFPA have been 92.3 dB (including the driver stages) and 68.3%, respectively. The harmonic content in the RF output is less than -50 dBc for all the harmonics. Main features of this development are high power density (kW/cm3), large value for kW/module, high efficiency (68.3%) for 8 kW SSRFPA at 325 MHz and rugged operation.

  3. A compact high efficiency 8 kW 325 MHz power amplifier for accelerator applications

    International Nuclear Information System (INIS)

    A solid state RF power amplifier (SSRFPA) has been designed and developed for 8 kW RF power at 325 MHz. The work was carried out to achieve high efficiency (over 70% efficiency), high gain and compact size for the amplifier module. The sub-components of this amplifier like a 1 kW amplifier module at 325 MHz, an 8-way RF power combiner rated for 8 kW RF power and a micro-strip based power divider have been designed and developed in-house. The size of the amplifier is miniaturized by incorporating innovative design techniques and proper selection of the substrate material in the input/output matching networks. Measured power gain and conversion efficiency of the solid state RF power amplifier module at 1.06 kW output is 21.7 dB and 73.2%, respectively. A coaxial line based 8-way Wilkinson power combiner has been designed and developed. Return loss of the combiner at the output (combined) port is 26.4 dB at 325 MHz. Transmission parameters of the combiner from each input (splitting) port to output port are 9.1 dB±0.15 dB. This amplifier uses a pre-driver of 20 W and a driver amplifier of 150 W. Total power gain and efficiency of 8 kW SSRFPA have been 92.3 dB (including the driver stages) and 68.3%, respectively. The harmonic content in the RF output is less than −50 dBc for all the harmonics. Main features of this development are high power density (kW/cm3), large value for kW/module, high efficiency (68.3%) for 8 kW SSRFPA at 325 MHz and rugged operation

  4. High peak power picosecond hybrid fiber and solid-state amplifier system

    International Nuclear Information System (INIS)

    We report the high peak power picosecond hybrid fiber and solid-state laser amplifier system. The passively mode-locked solid-state seed source produced an average power of 1.8 W with pulse width of 14 ps and repetition rate of 86 MHz. It was directly coupled into the first Yb-doped polarized photonic crystal fiber amplifier stage. To avoid the nonlinear effects in fiber, the output power from the first stage was merely amplified to 24 W with the narrow spectra broadening of 0.21 nm. For the improvement of the peak power, the dual-end pumped composite Nd:YVO4 amplifier system has been chosen at the second stage. To reduce the serious thermal effect, the thermally bonded composite YVO4 – Nd:YVO4 – YVO4 rod crystal was used as the gain medium. The 53 W TEM00 mode with the peak power of 40 kW, beam quality of M2 < 1.15, corresponding to the optical-optical efficiency of 42.4% was obtained at the hybrid amplifier laser system. The system allows using a low power seed source and demonstrates an increase in the peak power beyond a fiber master oscillator power amplifier's (MOPA's) limit

  5. An X-band four-way combined GaN solid-state power amplifier

    International Nuclear Information System (INIS)

    An X-band four-way combined GaN solid-state power amplifier module is fabricated based on a self-developed AlGaN/GaN HEMT with 2.5-mm gate width technology on SiC substrate. The module consists of an AlGaN/GaN HEMT, Wilkinson power hybrids, a DC-bias circuit and microstrip matching circuits. For the stability of the amplifier module, special RC networks at the input and output, a resistor between the DC power supply and a transistor gate at the input and 3λ/4 Wilkinson power hybrids are used for the cancellation of low frequency self-oscillation and crosstalk of each amplifier. Under Vds = 27 V, Vgs = -4.0 V, CW operating conditions at 8 GHz, the amplifier module exhibits a line gain of 5 dB with a power added efficiency of 17.9%, and an output power of 42.93 dBm; the power gain compression is 2 dB. For a four-way combined solid-state amplifier, the power combining efficiency is 67.5%. It is concluded that the reduction in combining efficiency results from the non-identical GaN HMET, the loss of the hybrid coupler and the circuit fabricating errors of each one-way amplifier. (semiconductor integrated circuits)

  6. Investigations on high power solid state RF and microwave amplifiers for superconducting structures

    International Nuclear Information System (INIS)

    The radio frequency (RF) and microwave power amplifiers are key systems for many strategic applications. In recent years, the cutting-edge technology of solid-state RF amplifier has outshined as compared to vacuum tube counterparts, due to its numerous advantages offered for particle accelerator's systems. Major constituent blocks of a typical high power solid-state RF amplifier are power amplifier modules, power combiners, dividers and directional couplers. In this thesis, investigations of newer and improved design techniques and topologies, suitable for high power and efficient operation of these blocks, followed by their experimental verification has been carried out. Most of the reported designs for the solid-state amplifier aims for low-power output. At high RF power (> 500 W), such designs and the desired wave-shaping, governed by operating class, of the transistor's terminal voltage do not meet the calculated requisites. The calculated optimum values of the terminal voltage/current often exceed the maximum voltage rating of the transistor. Hence, newer methodology using continuous harmonic-tuned design-space, with the inclusion of the nonlinear output (drain) capacitor of the LDMOS transistor, solves this problem. In this thesis, the traditional and newer continuous harmonic tuned operating modes for amplifier modules, at high power, were suitably investigated

  7. Wideband 220 GHz solid state power amplifier MMIC within minimal die size

    Science.gov (United States)

    Cheron, Jerome; Grossman, Erich N.

    2014-05-01

    A wideband and compact solid state power amplifier MMIC is simulated around 220 GHz. It utilizes 6 μm emitter length common base HBTs from a 250 nm InP HBT technology. Specific power cells and power combiners are simulated in order to minimize the width of the die, which must not exceed 300 μm to avoid multimode propagation in the substrate. Four stages are implemented over a total area of the (275x1840) μm2. Simulations of this power amplifier indicate a minimum output power of 14 dBm associated with 16 dB of power gain from 213 GHz to 240 GHz.

  8. Multi-mode multi-band power amplifier module with high low-power efficiency

    Science.gov (United States)

    Xuguang, Zhang; Jie, Jin

    2015-10-01

    Increasingly, mobile communications standards require high power efficiency and low currents in the low power mode. This paper proposes a fully-integrated multi-mode and multi-band power amplifier module (PAM) to meet these requirements. A dual-path PAM is designed for high-power mode (HPM), medium-power mode (MPM), and low-power mode (LPM) operations without any series switches for different mode selection. Good performance and significant current saving can be achieved by using an optimized load impedance design for each power mode. The PAM is tapeout with the InGaP/GaAs heterojunction bipolar transistor (HBT) process and the 0.18-μm complementary metal-oxide semiconductor (CMOS) process. The test results show that the PAM achieves a very low quiescent current of 3 mA in LPM. Meanwhile, across the 1.7-2.0 GHz frequency, the PAM performs well. In HPM, the output power is 28 dBm with at least 39.4% PAE and -40 dBc adjacent channel leakage ratio 1 (ACLR1). In MPM, the output power is 17 dBm, with at least 21.3% PAE and -43 dBc ACLR1. In LPM, the output power is 8 dBm, with at least 18.2% PAE and -40 dBc ACLR1. Project supported by the National Natural Science Foundation of China (No. 61201244).

  9. High Efficiency Ka-Band Solid State Power Amplifier Waveguide Power Combiner

    Science.gov (United States)

    Wintucky, Edwin G.; Simons, Rainee N.; Chevalier, Christine T.; Freeman, Jon C.

    2010-01-01

    A novel Ka-band high efficiency asymmetric waveguide four-port combiner for coherent combining of two Monolithic Microwave Integrated Circuit (MMIC) Solid State Power Amplifiers (SSPAs) having unequal outputs has been successfully designed, fabricated and characterized over the NASA deep space frequency band from 31.8 to 32.3 GHz. The measured combiner efficiency is greater than 90 percent, the return loss greater than 18 dB and input port isolation greater than 22 dB. The manufactured combiner was designed for an input power ratio of 2:1 but can be custom designed for any arbitrary power ratio. Applications considered are NASA s space communications systems needing 6 to 10 W of radio frequency (RF) power. This Technical Memorandum (TM) is an expanded version of the article recently published in Institute of Engineering and Technology (IET) Electronics Letters.

  10. A SILICON LDMOS BASED RF POWER AMPLIFIER FOR WIRELESS BASE STATION APPLICATIONS

    Directory of Open Access Journals (Sweden)

    Thiyagarajan Krishnan

    2013-10-01

    Full Text Available Radio Frequency Power amplifier is one of the essential module in the transmission chain of wireless Base stations. There is always a trade-off exists between power efficiency and linearity of the power amplifier. The design of power amplifier using LDMOS based active devices will give cost-effective solution. This work presents the design of a Class A power amplifier for unlicensed ISM band wireless Base station requirements. The design is carried out using Si-LDMOS (Silicon - Laterally Diffused Metal Oxide Semiconductor technology and is built on Epoxy-FR4 (Flame Retardant, woven glass reinforced epoxy resin board with a dielectric constant of 4.6 and substrate thickness of 1.6 mm. The amplifier design uses Free scale Si-LDMOS MW6S004NT1 transistor model in Agilent’s Advanced Design System (ADS 2011. The simulation was carried out to analyze the behaviour of power amplifier in the 2.4GHz ISM band. The simulated results has shown an acceptable behaviour with a gain of 16.558 dB, power added efficiency of 61.897% at 2.4 GHz, which allow the use of the device in the wireless base station application requirements.

  11. Low-timing-jitter high-power mode-locked 1063 nm Nd:GdVO₄ master oscillator power amplifier.

    Science.gov (United States)

    Wang, Zhi-min; Zhang, Feng-feng; Zuo, Jun-wei; Yang, Jing; Yuan, Lei; Peng, Qin-jun; Cui, Da-fu; Xu, Zu-yan

    2015-10-01

    A low-timing-jitter high-power semiconductor saturable absorber mirror mode-locked picosecond (ps) 1063 nm Nd:GdVO4 master oscillator power amplifier is presented. Using a single-pass Nd:GdVO4 amplifier, an amplified laser with 21.5 W output power and 8.3 ps pulsewidth was achieved at 250 MHz repetition rate. Employing a servo control, an average RMS timing jitter of ∼222  fs was realized. This laser can be used as a drive laser for photocathode injectors in free-electron lasers. PMID:26479619

  12. High average power picoseconds fiber amplifier with 20 μm core YDF

    International Nuclear Information System (INIS)

    In this letter we report a simple single-stage amplifier realized as high as 62 W average power output at 1064 nm wavelength, 40 picoseconds pulse width and 80 MHz repetition from 0.7 W seed laser based on backward pumped master-oscillator fiber power amplifier (MOPA) system. It is can stable operation in 57.6 W output for hours. We applied a semiconductor saturable absorber mirror (SESAM) passive mode-lock Nd:YVO4 oscillator as seed source and 6m long 20 μm core double-cladding Yb-doped fiber (YDF) as gain medium. To the best of our knowledge, 62 W average power is the highest output of single-stage ps-pulse amplifier with 20 μm-core fiber. None amplified spontaneous emission (ASE) and stimulated Raman scattering (SRS) nonlinear phenomenon was observed in 57.6 W high average power output

  13. High Power Narrow Linewidth 1.26 Micron Ho-Doped Fiber Amplifier Project

    Data.gov (United States)

    National Aeronautics and Space Administration — This proposal is for the development of an innovative, high power, and extremely reliable 1.26-micron Ho-doped fluoride fiber amplifier. The proposed fiber...

  14. Optimized Pump Power Ratio on 2nd Order Pumping Discrete Raman Amplifier

    Institute of Scientific and Technical Information of China (English)

    Renxiang Huang; Youichi Akasaka; David L. Harris; James Pan

    2003-01-01

    By optimizing pump power ratio between 1st order backward pump and 2nd order forward pump on discrete Raman amplifier, we demonstrated over 2dB noise figure improvement without excessive non-linearity degradation.

  15. Heterojunction Bipolar Transistor Power Amplifiers for Long-Range X-band Communications Project

    Data.gov (United States)

    National Aeronautics and Space Administration — In this SBIR Phase I project, Vega Wave Systems, Inc. will develop and demonstrate a novel InGaP-GaAs heterojunction bipolar transistor power amplifier for...

  16. High Performance Ka Band Power Amplifiers for Future EVA Radio Applications Project

    Data.gov (United States)

    National Aeronautics and Space Administration — In this proposal, AlphaSense, Inc. and the University of Washington detail the development of a novel, high performance Ka band power amplifier for EVA radio...

  17. Design and initial development of 1 KW pulsed S-band solid state power amplifier

    International Nuclear Information System (INIS)

    We present design and initial developmental work for 1kW S-Band pulsed amplifier. This amplifier will be used for driving high power klystrons to be used in proposed accelerator test stand at RRCAT. The design is based on Class C pulsed power transistors to achieve higher efficiency. Proposed amplifier will provide ∼ 1kW of pulsed power with 10 us pulsed width and 300 Hz repetition rate. To achieve 1kW of output power, four 300W Class C transistors are combined using Wilkinson Power divider and combiners. Microstrip based Wilkinson power divider and combiners have been developed and tested, high power transistors have been ordered and are expected to arrive soon. (author)

  18. Development of high sensitivity transimpedance amplifier module for self powered neutron detectors

    International Nuclear Information System (INIS)

    This paper describes design and development of a Transimpedance Amplifier for amplification of very low current from in core Self Powered Neutron Detectors (SPND). Measurement of neutron flux is very important for operation, control and protection of Nuclear Power Plant (NPP). SPND is used to measure Reactor incore flux/power. Based on sensitivity of emitter material used in SPND, pitch length and neutron flux (power level); the current output from SPND varies from few pA to few μA. The described amplifier is suitable to use for this current range. The amplifier provides a very high gain using a resistive T network feedback topology. The amplifier is designed in two stages using ultra low bias current FET OPAMPs. Design of Transimpedance amplifier is carefully done to include ultra low input bias current, low offset voltage and noise. The amplifier has in built test facility for calibration and on line test facility for measurement of insulation resistance (IR). The amplifier module has on board isolated DC-DC converter circuit complying MIL/STD/461C/D which generate isolated +/-15V and +12V supply to provide parameter to parameter ground isolation and independence among each module/signal.The output from the amplifier is 0V to 6V for 0 to 150%FP. The design is simulated in computer and amplifier used at TAPS-3 was modified as per new design and has been tested at TAPS-3 site. The amplifier performed satisfactorily. The results showed that the IR measurement technique adopted in the design can tolerate lower IR of SPND in existing design. (author)

  19. Design of a high power, 10 GHz auto-resonant peniotron amplifier

    International Nuclear Information System (INIS)

    The autoresonant peniotron amplifier is a suitable source of high power RF radiation because of its high gain, high power, high frequency and high efficiency operation features. In this report we present our simulation results of a 10 GHz, 2.2 GW autoresonant peniotron amplifier with an electron energy conversion efficiency of 72.5 % and a gain of about 58 dB. (author)

  20. Augmented Twin-Nonlinear Two-Box Behavioral Models for Multicarrier LTE Power Amplifiers

    OpenAIRE

    Oualid Hammi

    2014-01-01

    A novel class of behavioral models is proposed for LTE-driven Doherty power amplifiers with strong memory effects. The proposed models, labeled augmented twin-nonlinear two-box models, are built by cascading a highly nonlinear memoryless function with a mildly nonlinear memory polynomial with cross terms. Experimental validation on gallium nitride based Doherty power amplifiers illustrates the accuracy enhancement and complexity reduction achieved by the proposed models. When strong memory ef...

  1. Small sized high-gain PHEMT high-power amplifiers for X-BAND applications

    OpenAIRE

    Hek, A.P. de; Hunneman, P.A.H.

    2000-01-01

    The development of two small sized broadband X-band high-power amplifiers is discussed. The amplifiers are realised with the help of the pseudomorphic HEMT technology of the Fraunhofer Institute for Applied Solid State Physics (FhG-IAF). With the help of this technology the feasibility of integrating a driver and high-power amplifier on a single, small sized, chip is demonstrated. This integration will reduce the number of chips necessary in a Transmit/Receive (T/R) module used in e.g. a phas...

  2. An X-band GaN combined solid-state power amplifier

    International Nuclear Information System (INIS)

    Based on a self-developed AlGaN/GaN HEMT with 2.5 mm gate width technology on a SiC substrate, an X-band GaN combined solid-state power amplifier module is fabricated. The module consists of an AlGaN/GaN HEMT, Wilkinson power couplers, DC-bias circuit and microstrip line. For each amplifier, we use a bipolar DC power source. Special RC networks at the input and output and a resistor between the DC power source and the gate of the transistor at the input are used for cancellation of self-oscillation and crosstalk of low-frequency of each amplifier. At the same time, branches of length 3λ/4 for Wilkinson power couplers are designed for the elimination of self-oscillation of the two amplifiers. Microstrip stub lines are used for input matching and output matching. Under Vds = 27 V, Vgs = -4.0 V, CW operating conditions at 8 GHz, the amplifier module exhibits a line gain of 5.6 dB with power added efficiency of 23.4%, and output power of 41.46 dBm (14 W), and the power gain compression is 3 dB. Between 8 and 8.5 GHz, the variation of output power is less than 1.5 dB.

  3. A 30 KW RF power amplifier for the RFQ accelerator (Paper No. CP 27)

    International Nuclear Information System (INIS)

    A radio frequency quadrupole (RFQ) accelerator, to accelerate deuterons to an energy of 150 keV with beam current of 20 mA, has been designed and is under construction. This accelerator needs approximately 30 kW of RF power to generate the desired voltage of 55 kV on the electrodes, at a frequency of 45 MHz. The power amplifier is designed with four stages of RF amplification using vacuum tubes. The first two stages are built with the tubes 6146 and BEL 250 CX, to deliver about 100 watts power to the grid circuit of the pre driver. The pre driver (EIMAC 5 CX 1500 A) and the driver (BEL 4000 CX) give an output power of about 5kW, at the grid of the high power amplifier. All the four tubes operate in class A/AB mode. The high power amplifier has been designed and is being built around the BEL power tetrode tube CQK-50-2. The output from the high power amplifier is fed to the RFQ, via a matching network to tranform the plate impedance to 50 ohm loop impedeance at the RFQ. The paper presents the design aspects of the high power amplifier, matching network and the results obtained for the earlier stages. (author). 3 refs., 3 tabs., 2 figs

  4. Power amplifiers for the S-, C-, X- and Ku-bands an EDA perspective

    CERN Document Server

    Božanić, Mladen

    2016-01-01

    This book provides a detailed review of power amplifiers, including classes and topologies rarely covered in books, and supplies sufficient information to allow the reader to design an entire amplifier system, and not just the power amplification stage. A central aim is to furnish readers with ideas on how to simplify the design process for a preferred power amplifier stage by introducing software-based routines in a programming language of their choice. The book is in two parts, the first focusing on power amplifier theory and the second on EDA concepts. Readers will gain enough knowledge of RF and microwave transmission theory, principles of active and passive device design and manufacturing, and power amplifier design concepts to allow them to quickly create their own programs, which will help to accelerate the transceiver design process. All circuit designers facing the challenge of designing an RF or microwave power amplifier for frequencies from 2 to 18 GHz will find this book to be a valuable asset.

  5. Audio Twister

    DEFF Research Database (Denmark)

    Cermak, Daniel; Moreno Garcia, Rodrigo; Monastiridis, Stefanos

    2015-01-01

    Daniel Cermak-Sassenrath, Rodrigo Moreno Garcia, Stefanos Monastiridis. Audio Twister. Installation. P-Hack Copenhagen 2015, Copenhagen, DK, Apr 24, 2015.......Daniel Cermak-Sassenrath, Rodrigo Moreno Garcia, Stefanos Monastiridis. Audio Twister. Installation. P-Hack Copenhagen 2015, Copenhagen, DK, Apr 24, 2015....

  6. CMOS 60-GHz and E-band power amplifiers and transmitters

    CERN Document Server

    Zhao, Dixian

    2015-01-01

    This book focuses on the development of design techniques and methodologies for 60-GHz and E-band power amplifiers and transmitters at device, circuit and layout levels. The authors show the recent development of millimeter-wave design techniques, especially of power amplifiers and transmitters, and presents novel design concepts, such as “power transistor layout” and “4-way parallel-series power combiner”, that can enhance the output power and efficiency of power amplifiers in a compact silicon area. Five state-of-the-art 60-GHz and E-band designs with measured results are demonstrated to prove the effectiveness of the design concepts and hands-on methodologies presented. This book serves as a valuable reference for circuit designers to develop millimeter-wave building blocks for future 5G applications.

  7. Power Scaling of Laser Oscillators and Amplifiers Based on Nd:YVO4

    OpenAIRE

    Yarrow, Michael James

    2006-01-01

    This thesis presents a strategy for power and brightness scaling in diode-end-pumped, master-oscillator-power-amplifier laser systems, based on Nd:YVOIssues relating to further power and brightness scaling are discussed as well as the potential applications of these laser sources as pump sources for frequency conversion in optical parametric devices.

  8. A describing function approach to bipolar RF-power amplifier simulation

    DEFF Research Database (Denmark)

    Vidkjær, Jens

    1981-01-01

    A method for fast and accurate computations of the primary performance parameters such as gain, efficiency, output power, and bandwidth in class-C biased RF-power amplifier stages is presented. The method is based on a describing function characterization of the RF-power transistor where the term...

  9. The Use of a Solid State Analog Television Transmitter as a Superconducting Electron Gun Power Amplifier

    Energy Technology Data Exchange (ETDEWEB)

    J.G. Kulpin, K.J. Kleman, R.A. Legg

    2012-07-01

    A solid state analog television transmitter designed for 200 MHz operation is being commissioned as a radio frequency power amplifier on the Wisconsin superconducting electron gun cavity. The amplifier consists of three separate radio frequency power combiner cabinets and one monitor and control cabinet. The transmitter employs rugged field effect transistors built into one kilowatt drawers that are individually hot swappable at maximum continuous power output. The total combined power of the transmitter system is 33 kW at 200 MHz, output through a standard coaxial transmission line. A low level radio frequency system is employed to digitally synthesize the 200 MHz signal and precisely control amplitude and phase.

  10. CERN-group conceptual design of a fast neutron operated high power energy amplifier

    International Nuclear Information System (INIS)

    The practical feasibility of an Energy Amplifier (EA) with power and power density which are comparable to the ones of the present generation of large PWR is discussed in this paper. This is only possible with fast neutrons. Schemes are described which offer a high gain, a large maximum power density and an extended burn-up, well in excess of 100 GW x d/t corresponding to about five years at full power operation with no intervention on the fuel core. The following topics are discussed: physics considerations and parameter definition, the accelerator complex, the energy amplifier unit, computer simulated operation, and fuel cycle closing

  11. Yb:YAG single crystal fiber power amplifier for femtosecond sources.

    Science.gov (United States)

    Délen, Xavier; Zaouter, Yoann; Martial, Igor; Aubry, Nicolas; Didierjean, Julien; Hönninger, Clemens; Mottay, Eric; Balembois, François; Georges, Patrick

    2013-01-15

    We demonstrate a versatile femtosecond power amplifier using a Yb:YAG single crystal fiber operating from 10 kHz to 10 MHz. For a total pump power of 75 W, up to 30 W is generated from the double-pass power amplifier. At a repetition rate of 10 kHz, an output energy of 1 mJ is obtained after recompression. In this configuration, the pulse duration is 380 fs, corresponding to a peak power of 2.2 GW. The M2 beam quality factor is better than 1.1 for investigated parameters. PMID:23454931

  12. Yb:YAG single crystal fiber power amplifier for femtosecond sources

    OpenAIRE

    Délen, Xavier; Zaouter, Yoann; Martial, Igor; Aubry, Nicolas; Didierjean, Julien; Hönninger, Clemens; Mottay, Eric; Balembois, François; Georges, Patrick

    2013-01-01

    We demonstrate a versatile femtosecond power amplifier using a Yb:YAG single crystal fiber operating from 10 kHz to 10 MHz. For a total pump power of 75 W, up to 30 W is generated from the double-pass power amplifier. At a repetition rate of 10 kHz, an output energy of 1 mJ is obtained after recompression. In this configuration, the pulse duration is 380 fs, corresponding to a peak power of 2.2 GW. The M2 beam quality factor is better than 1.1 for investigated parameters.

  13. A high average power single-stage picosecond double-clad fiber amplifier

    International Nuclear Information System (INIS)

    In this paper, we report 38.8 W average power output through a single-stage fiber amplifier, with emission of 1064 nm wavelength with 80 MHz repetition and 35 ps pulse width amplified from a 2.15 W SESAM passively mode-locked Nd:YVO4 laser oscillator. The high power fiber amplification is through a coupled 60.8 W 976 nm backward unidirectional pump power into a 2 m long 30/250 μm Yb-doped inner cladding. No obvious nonlinear effects arise in the high power output. To our knowledge this is the highest average power output with 2 m 30/250 μm Yb-doped double-clad fiber in a single-stage picosecond fiber amplifier. (paper)

  14. Hybrid ultra-short Yb:YAG ceramic master-oscillator high-power fiber amplifier.

    Science.gov (United States)

    Zhou, Hui; Li, Wenxue; Yang, Kangwen; Lin, Niannian; Jiang, Benxue; Pan, Yubai; Zeng, Heping

    2012-07-01

    We demonstrated a hybrid ceramic master-oscillator high-power fiber amplifier with a diode-pumped Yb:YAG ceramic laser as the seeding oscillator, which was passively mode-locked at 103.29 MHz repetition rate around 1031 nm by using a semiconductor saturable absorption mirror, and a two-stage double-clad photonic crystal fiber amplifier, which power-scaled the ceramic laser oscillator up to an average power of 303 W. The amplified pulses were further compressed to 237 and 418 fs at 50 and 150 W output powers, respectively. The compressed pulses exhibited about 0.05% deviation from the Gaussian fit, implying that the high-power fiber amplification induced neither observable temporal and spectral distortion nor significant nonlinear de-chirping of the chirped pulses. PMID:22828617

  15. ICC Experiment Performance Improvement through Advanced Feedback Controllers for High-Power Low-Cost Switching Power Amplifiers

    International Nuclear Information System (INIS)

    Limited resources force most smaller fusion energy research experiments to have little or no feedback control of their operational parameters, preventing achievement of their full operational potential. Recent breakthroughs in high-power switching technologies have greatly reduced feedback-controlled power supply costs, primarily those classified as switching power amplifiers. However, inexpensive and flexible controllers for these power supplies have not been developed. A uClinux-based micro-controller (Analog Devices Blackfin BF537) was identified as having the capabilities to form the base of a digital control system for switching power amplifiers. A control algorithm was created, and a Linux character device driver was written to realize the algorithm. The software and algorithm were successfully tested on a switching power amplifier and magnetic field coil using University of Washington (subcontractor) resources

  16. Wideband Power Amplifier Modeling Incorporating Carrier Frequency Dependent AM/AM and AM/PM Characteristics

    Science.gov (United States)

    Tkacenko, A.

    2013-05-01

    In this article, we present a complex baseband model for a wideband power amplifier that incorporates carrier frequency dependent amplitude modulation (AM) and phase modulation (PM) (i.e., AM/AM and AM/PM) characteristics in the design process. The structure used to implement the amplifier model is a Wiener system which accounts for memory effects caused by the frequency selective nature of the amplifier, in addition to the nonlinearities caused by gain compression and saturation. By utilizing piecewise polynomial nonlinearities in the structure, it is shown how to construct the Wiener model to exactly accommodate all given AM/AM and AM/PM measurement constraints. Simulation results using data from a 50 W 32-way Ka-band solid-state power amplifier (SSPA) are provided, highlighting the differences in degradation incurred for a wideband input signal as compared with a narrowband input.

  17. Design and testing of fast, low-power, low-noise amplifier-comparator VLSI circuits

    International Nuclear Information System (INIS)

    We have designed and fabricated through MOSIS two amplifier-comparator chips using BICMOS technology for use with silicon strip detectors. The chips use BJT, JFET, MOSFET, and capacitor devices. BJT-MOS and BJT-JFET based amplifiers and comparators are implemented in various configurations. The resulting amplifiers provide good performance at less than 1 mW power per channel and illustrate the potential for such performance of circuits using BJT active devices with active loads of CMOS of JFET transistors. (orig.)

  18. Pulsed operation of a high average power Yb:YAG thin-disk multipass amplifier.

    Science.gov (United States)

    Schulz, M; Riedel, R; Willner, A; Düsterer, S; Prandolini, M J; Feldhaus, J; Faatz, B; Rossbach, J; Drescher, M; Tavella, F

    2012-02-27

    An Yb:YAG thin-disk multipass laser amplifier system was developed operating in a 10 Hz burst operation mode with 800 µs burst duration and 100 kHz intra-burst repetition rate. Methods for the suppression of parasitic amplified spontaneous emission are presented. The average output pulse energy is up to 44.5 mJ and 820 fs compressed pulse duration. The average power of 4.45 kW during the burst is the highest reported for this type of amplifier. PMID:22418308

  19. High-power Yb:YAG single-crystal fiber amplifiers for femtosecond lasers

    Science.gov (United States)

    Lesparre, Fabien; Martial, Igor; Didierjean, Julien; Gomes, Jean Thomas; Pallmann, Wolfgang; Resan, Bojan; Loescher, André; Negel, Jan-Phillipp; Graf, Thomas; Abdou Ahmed, Marwan; Balembois, François; Georges, Patrick

    2015-02-01

    We describe a multi-stages single crystal fiber (SCF) amplifier for the amplification of femtosecond pulses with radial or azimuthal polarization in view of high speed material processing (surface structuring, drilling). We demonstrate a three stages diode-pumped Yb:YAG single crystal fiber amplifier to achieve femtosecond pulses at an average power of 85W at 20 MHz in radial and azimuthal polarization.

  20. High power Yb:YAG single-crystal fiber amplifiers for femtosecond lasers

    OpenAIRE

    Lesparre, Fabien; Martial, Igor; GOMES, Jean Thomas; Didierjean, Julien; Pallmann, Wolfgang; Resan, Bojan; Loescher, André; Negel, Jan-Philipp; Graf, Thomas; Abdou Ahmed, Marwan; Balembois, François; Georges, Patrick

    2014-01-01

    We describe a multi-stages single crystal fiber (SCF) amplifier for the amplification of femtosecond pulses with radial or azimuthal polarization in view of high speed material processing (surface structuring, drilling). We demonstrate a three stages diode-pumped Yb:YAG single crystal fiber amplifier to achieve femtosecond pulses at an average power of 85W at 20 MHz in radial and azimuthal polarization.

  1. Hybrid master oscillator power amplifier high-power narrow-linewidth nanosecond laser source at 257 nm

    OpenAIRE

    Délen, Xavier; Deyra, Loïc; Benoit, Aurélien; Hanna, Marc; Balembois, François; Cocquelin, Benjamin; Sangla, Damien; Salin, François; Didierjean, Julien; Georges, Patrick

    2013-01-01

    We report on a high-power narrow-linewidth pulsed laser source emitting at a wavelength of 257 nm. The system is based on a master oscillator power amplifier architecture, with Yb-doped fiber preamplifiers, a Yb:YAG single crystal fiber power amplifier used to overcome the Brillouin limitation in glass fiber and nonlinear frequency conversion stages. This particularly versatile architecture allows the generation of Fourier transform-limited 15 ns pulses at 1030 nm with 22 W of average power a...

  2. The Paralleling of High Power High Frequency Amplifier Based on Synchronous and Asynchronous Control

    Institute of Scientific and Technical Information of China (English)

    程荣仓; 刘正之

    2004-01-01

    The vertical position of plasma in the HT-7U Tokamak is inherently unstable. In order to realize active stabilization, the response rate of the high-power high-frequency amplifier feeding the active control coils must be fast enough. This paper analyzes the paralleling scheme of the power amplifier through two kinds of control mode. One is the synchronous control; the other is the asynchronous control. Via the comparison of the two kinds of control mode, both of their characteristics are given in the text. At last, the analyzed result is verified by a small power experiment.

  3. A novel technique for electronic phasing of high power fiber amplifier arrays

    Science.gov (United States)

    Shay, T. M.; Baker, J. T.; Sanchez, Anthony D.; Robin, C. A.; Vergien, C. L.; Zeringue, C.; Gallant, D.; Lu, Chunte A.; Pulford, Benjamin; Bronder, T. J.; Lucero, Arthur

    2009-06-01

    We report high power phase locked fiber amplifier array using the Self-Synchronous Locking of Optical Coherence by Single-detector Electronic-frequency Tagging technique. We report the first experimental results for a five element amplifier array with a total locked power of more than 725-W. We will report on experimental measurements of the phase fluctuations versus time when the control loop is closed. The rms phase error was measured to be λ/60. Recent results will be reported. To the best of the authors' knowledge this is the highest fiber laser power to be coherently combined.

  4. Design of an Adaptive Predistorter for Solid State Power Amplifier in Wireless OFDM Systems

    OpenAIRE

    de Figueiredo, Rui J. P.; Lin Fang; Byung Moo Lee

    2009-01-01

    Orthogonal frequency division multiplexing (OFDM) is a powerful modulation choice for wideband wireless communication systems. However, its high peak-to-average power ratio greatly limits the high power amplifier (HPA) power efficiency. Here, we present the design of an adaptive predistorter to compensate the distortion caused by the HPA. Specifically, we deal with the implementation issue of the proposed predistorter in Lee and de Figueiredo's work (2006). The performance improvement by pred...

  5. Design of CMOS Power Amplifier for Millimeter Wave Systems at 70 GHz

    Directory of Open Access Journals (Sweden)

    Rashid A. Saeed

    2013-02-01

    Full Text Available In this paper, a new CMOS power amplifier that can operate at 70 GHz is designed and developed. The advantages of using 70 GHz at millimeter wave (mmW band is the huge amount of bandwidth available for various purposes whether they are in the cellular industry or manufacture devices such as high bandwidth wireless LAN and low attenuation of bandwidth frequencies around 70 GHz bands comparing with 60 GHz. Design power amplifiers at 70 GHz are quite challenges task. The complication such as the stability of the amplifier is difficult and hard to be achieved. In this paper, we design power amplifier with 3 single ended, common source stages biased in class A. The proposed circuit resulted in a stable power amplifier capable of working at 70 GHz frequency. The purpose of using three stages is not only to maximize gain but also to increase isolation against reflections. We found that this configuration has many advantages in terms of lower power supply required, leading to higher efficiencyand good linearity. The first stage is biased at a peak Fmax biased of 0.2 mA/μm to maximize the gain to 10.58 dB. The second and third stages are biased at optimum linearity current density of 0.28 mA/μm.

  6. 1 GHz GaAs Buck Converter for High Power Amplifier Modulation Applications

    NARCIS (Netherlands)

    Busking, E.B.; Hek, A.P. de; Vliet, F.E. van

    2012-01-01

    A fully integrated 1 GHz buck converter output stage, including on-chip inductor and DC output filtering has been realized, in a standard high-voltage breakdown GaAs MMIC technology. This is a significant step forward in designing highspeed power control of supply-modulated HPAs (high power amplifie

  7. High-voltage class-D power amplifiers: design and optimization

    NARCIS (Netherlands)

    Ma, Haifeng

    2015-01-01

    The main objective of this thesis is to further enhance high-voltage class-D amplifier power efficiency compared to existing class-D designs. To gain insight in class D power efficiency, detailed analysis of high-voltage class-D dissipation sources is performed and a dissipation model is developed.

  8. Satellite Power Systems (SPS) Concept Definition Study (Exhibit D). Solid-State Amplifier Investigation

    Science.gov (United States)

    Hanley, G. M.

    1981-01-01

    Data resulting from a continuing effort to provide system/subsystem definition data to aid in the evaluation of the SPS program concept is presented. The specific data described relate to the proposed use of solid state devices as microwave power amplifiers in the satellite microwave power transmission subsystem.

  9. Design Methodology of High Power Distributed Amplifier Employing Broadband Impedance Transformer

    DEFF Research Database (Denmark)

    Narendra, Kumar; Zhurbenko, Vitaliy; Collantes, Juan Mari; BoonPing, Koh

    A novel topology of a high power distributed amplifier (DA) in combination with a broadband impedance transformer is presented. The advantages of the proposed topology are explored analytically and verified by a full-wave 3D simulations. Stability of the high power DA is verified with the pole...

  10. A 1-Watt Ku-Band Power Amplifier MMIC Using Cost-Effective Organic SMD Package

    NARCIS (Netherlands)

    Bessemoulin, A.; Parisot, M.; Quentin, P.; Saboureau, C.; Heijningen, M. van; Priday, J.

    2004-01-01

    This paper presents the design and performance of a compact 1-Watt Ku-band power amplifier MMIC implemented in a novel microwave organic power package, compatible with SMD assembly lines. Due to the use of simple materials, like RO4003 substrate and copper, it allows significant cost reduction for R

  11. 50 Watt S-band Power Amplifier in 0.25 um GaN Technology

    NARCIS (Netherlands)

    Bent, G. van der; Hek, P. de; Graaf, M. van der; Vliet, F.E. van

    2014-01-01

    A 50 W S-band High Power Amplifier in the UMS GH25-10 technology is presented. In order to increase the output power per area the size of the transistors is increased beyond the maximum size modelled by the foundry. For this reason the design procedure included the measurements of a transistor and t

  12. Power Amplifier Module with 734-mW Continuous Wave Output Power

    Science.gov (United States)

    Fung, King Man; Samoska, Lorene A.; Kangaslahti, Pekka P.; Lamgrigtsen, Bjorn H.; Goldsmith, Paul F.; Lin, Robert H.; Soria, Mary M.; Cooperrider, Joelle T.; Micovic, Moroslav; Kurdoghlian, Ara

    2010-01-01

    Research findings were reported from an investigation of new gallium nitride (GaN) monolithic millimeter-wave integrated circuit (MMIC) power amplifiers (PAs) targeting the highest output power and the highest efficiency for class-A operation in W-band (75-110 GHz). W-band PAs are a major component of many frequency multiplied submillimeter-wave LO signal sources. For spectrometer arrays, substantial W-band power is required due to the passive lossy frequency multipliers-to generate higher frequency signals in nonlinear Schottky diode-based LO sources. By advancing PA technology, the LO system performance can be increased with possible cost reductions compared to current GaAs PAs. High-power, high-efficiency GaN PAs are cross-cutting and can enable more efficient local oscillator distribution systems for new astrophysics and planetary receivers and heterodyne array instruments. It can also allow for a new, electronically scannable solid-state array technology for future Earth science radar instruments and communications platforms.

  13. Design of a new VHF RF power amplifier system for LANSCE

    International Nuclear Information System (INIS)

    A major upgrade is replacing much of the 40 year-old proton drift tube linac RF system with new components at the Los Alamos Neutron Science Center (LANSCE). When installed, the new system will reduce the total number of electron power tubes from twenty-four to eight in the RF powerplant. A new 200 MHz high power cavity amplifier has being developed at LANSCE. This 3.2 MW final power amplifier (FPA) uses a Thales TH628 Diacrode(regsign), a state-of-the-art tetrode that eliminates the large anode modulator of the triode-based FPA that has been in use for four decades. Drive power for the FPA is provided by a new tetrode intermediate power amplifier (and a solid-state driver stage). The new system has sufficient duty-factor capability to allow LANSCE to return to 1 MW beam operation. Prototype RF power amplifiers have been designed, fabricated, and assembled, and are being tested. High voltage DC power became available through innovative re-engineering of an installed system. Details of the electrical and mechanical design of the FPA and ancillary systems are discussed.

  14. Design of a new VHF RF power amplifier system for LANSCE

    Energy Technology Data Exchange (ETDEWEB)

    Lyles, John T M [Los Alamos National Laboratory

    2010-01-01

    A major upgrade is replacing much of the 40 year-old proton drift tube linac RF system with new components at the Los Alamos Neutron Science Center (LANSCE). When installed, the new system will reduce the total number of electron power tubes from twenty-four to eight in the RF powerplant. A new 200 MHz high power cavity amplifier has being developed at LANSCE. This 3.2 MW final power amplifier (FPA) uses a Thales TH628 Diacrode{reg_sign}, a state-of-the-art tetrode that eliminates the large anode modulator of the triode-based FPA that has been in use for four decades. Drive power for the FPA is provided by a new tetrode intermediate power amplifier (and a solid-state driver stage). The new system has sufficient duty-factor capability to allow LANSCE to return to 1 MW beam operation. Prototype RF power amplifiers have been designed, fabricated, and assembled, and are being tested. High voltage DC power became available through innovative re-engineering of an installed system. Details of the electrical and mechanical design of the FPA and ancillary systems are discussed.

  15. Technology development of solid state RF power amplifier for superconducting cavities

    International Nuclear Information System (INIS)

    Super conducting RF accelerators utilizes special kind of cavities which are operated in the temperatures of 2-4 K. Due to high quality factor of these cavities, low RF power is needed to generate same accelerating gradient. Solid state RFPAs are best suited for these kinds of applications where RF power requirement is of the order of tens of kW. MOSFET based RFPA module has been designed and developed to deliver 1.0 kW of RF power at 325 MHz. These RFPAs have been tested with feature like power gain of 21.6 dB, efficiency of 70%, harmonic content of < -45 dBc and compact size (power output per unit volume). Wilkinson type power combiner and dividers have been designed and developed for combining of these RFPAs modules. High power RF output has been delivered by combing 8 nos. of RFPA modules and these Power divider and combiners. 8 kW output RF power have been extracted from this amplifier with 1.0 dB compression power at 7.3 kW. Overall amplifier efficiency has been 68% at 8 kW and 66% at 7.3 kW of output power. Harmonic content of this amplifier is <-50 dBc. (author)

  16. High Power Uplink Amplifier for Deep Space Communications Project

    Data.gov (United States)

    National Aeronautics and Space Administration — Critical to the success of delivering on the promise of deep space optical communications is the creation of a stable and reliable high power multichannel optical...

  17. Status of the high power, solid-state RF amplifier development at laboratori nazionali di legnaro

    CERN Document Server

    Scarpa, F; Facco, A

    The development of high power, unconditionally stable solid-state amplifiers for superconducting low-beta cavities, performed at Laboratori Nazionali di Legnaro in the framework of the EURISOL Design Study and in collaboration with Synchrotron Soleil [1], has led to the construction and testing of two newly designed 10 kW units that can be used both individually or coupled together to obtain a 20 kW source. This family of amplifiers, based on parallel assemblies of 300 W modules equipped with mosfets and individual circulators, gives the possibility of operating in any matching conditions and also, at a reduced power, in case of failure of one mosfet. Characteristics of amplifiers and high power combiner will be described, and their performance and test results will be reported.

  18. Medium Power 352 MHZ solid state pulsed RF amplifiers for the CERN LINAC4 Project

    CERN Document Server

    Broere, J; Gómez Martínez, Y; Rossi, M

    2011-01-01

    Economic, modular and highly linear pulsed RF amplifiers have recently been developed to be used for the three buncher cavities in the CERN Linac4. The amplifiers are water-cooled and can provide up to 33 kW pulsed RF Power, 1.5 ms pulse length and 50 Hz repetition rate. Furthermore a 60 kW unit is under construction to provide the required RF Power for the debuncher cavity. The concept is based on 1.2 kW RF power modules using the latest 6th generation LDMOS technology. For integration into the CERN control environment the amplifiers have an internal industrial controller, which will provide easy control and extended diagnostic functions. This paper describes the construction, performance, including linearity, phase stability and EMC compliance tests

  19. The power stability of a fiber amplifier based on a multifunction card and PID control program

    Science.gov (United States)

    Zhang, Linjie; Yang, Wenguang; Zhang, Hao; Zhao, JianMing; Jia, Suotang

    2016-06-01

    The power stability of a fiber amplifier was significantly improved by means of simultaneously controlling the current of a fiber amplifier and the diffraction efficiency of an acousto-optical modulator. The real-time fluctuation of laser power was recorded by a multifunction card and processed by a proportional–integral–derivative (PID) control program. The feedback loop voltage was introduced to the fiber laser amplifier and acoustic-optic modulator through the analog output of the multifunction card. The control method based on a multifunction card and PID program has good scalability, flexibility and reliability for the complex system on the condition in which the frequency and power of the laser need to be precisely stabilized.

  20. Design considerations for a high power, ultrabroadband optical parametric chirped-pulse amplifier.

    Science.gov (United States)

    Prandolini, M J; Riedel, R; Schulz, M; Hage, A; Höppner, H; Tavella, F

    2014-01-27

    A conceptual design of a high power, ultrabroadband optical parametric chirped-pulse amplifier (OPCPA) was carried out comparing nonlinear crystals (LBO and BBO) for 810 nm centered, sub-7.0 fs pulses with energies above 1 mJ. These amplifiers are only possible with a parallel development of kilowatt-level OPCPA-pump amplifiers. It is therefore important to know good strategies to use the available OPCPA-pump energy efficiently. Numerical simulations, including self- and cross-phase modulation, were used to investigate the critical parameters to achieve sufficient spectral and spatial quality. At high output powers, thermal absorption in the nonlinear crystals starts to degrade the output beam quality. Strategies to minimize thermal effects and limits to the maximum average power are discussed. PMID:24515165

  1. LOW VOLTAGE, LOW POWER CMOS OPERATIONAL AMPLIFIER INPUT STAGE

    OpenAIRE

    GUEN-BOUAZZA, A.; B. BOUAZZA; B. OMARI; CHABANE-SARI, N. E.; C. GONTRAND

    2003-01-01

    The lowering of the power supply and voltage has an enormous impact on the signal to noise ratio (SNR) of analog circuits. The SNR decreases because of the lower allowable signal voltages and also because of higher noise voltages due to low supply currents. To maximise SNR, we have to make the signal as large as possible ideally from rail to rail. Nowedays trend howards low voltage and low power design are mainly driven by the technological limitations of high pe...

  2. A high power picosecond Nd:YVO4 master oscillator power amplifier system pumped by 880 nm diodes

    International Nuclear Information System (INIS)

    We present a high power 880 nm diode-pumped passively mode-locked Nd:YVO4 oscillator, followed by an 880 nm diode-pumped Nd:YVO4 amplifier. In the oscillator, a maximum power of 8.7 W was obtained with a repetition rate of 63 MHz and pulse duration of 32 ps, corresponding to an optical efficiency of 36%. The beam quality factors M2 were measured to be Mx2=1.2 and My2=1.1 9, respectively. The amplifier generated up to 19.1 W output power with the pulse width and repetition rate remaining unaltered after amplification. (paper)

  3. Operation of Indus-2 with the support of high power solid state RF amplifiers

    International Nuclear Information System (INIS)

    Indus Accelerator complex at RRCAT houses two storage rings: Indus-1 and lndus-2. Booster synchrotron serves as common injector for these storage rings. Three major RF systems namely booster RF system, Indus-1 RF system and Indus-2 RF system have been developed and deployed for these accelerators. Booster and Indus-1 RF systems operating at 31.6 MHz are conventional Tetrode tube based systems. Indus-2 RF system was designed using Klystron tubes, operating at 505.8 MHz with maximum output power of 64 kW. During Indus-2 operation, some of the klystrons developed faults and only two klystrons which were bare minimum required for operating Indus-2 at 2 GeV, 100 mA were available. As the availability of the klystrons from foreign sources was uncertain and existing two klystrons were in operation for a long period, it was decided to expedite the indigenous development of solid state high power amplifiers as replacement of Klystrons. It was also decided to deploy the solid state amplifiers in phased manner so that operational life of the existing klystrons may be extended and in case of failure of another klystron Indus-2 machine could be run at 2 GeV with the support of the solid state amplifiers. In the first phase, 15 kW solid state RF amplifier was developed and integrated with RF cavity No.1. With the support of this 15 kW Solid State RF amplifier, Indus-2 beam energy could be increased up to 2.2 GeV at 100 mA. After successful operation of Indus-2 with the solid sate RF amplifier, another 15 kW RF amplifier was built and installed with RF cavity No.3. With addition of these two solid state amplifiers and optimization of RF system operating parameters, beam energy could be increased up to 2.3 GeV at 100 mA. With the confidence gained in this development and the technological expertise generated in RFSD at RRCAT, development work to replace all four 505.8 MHz Klystron based RF power stations with solid state RF amplifiers has been taken up. The paper describes the

  4. High-power, 1-ps, all-Yb:YAG thin-disk regenerative amplifier.

    Science.gov (United States)

    Fattahi, Hanieh; Alismail, Ayman; Wang, Haochuan; Brons, Jonathan; Pronin, Oleg; Buberl, Theresa; Vámos, Lénárd; Arisholm, Gunnar; Azzeer, Abdallah M; Krausz, Ferenc

    2016-03-15

    We report a 100 W, 20 mJ, 1-ps, all-Yb:YAG thin-disk regenerative amplifier seeded by a microjoule-level Yb:YAG thin-disk Kerr-lens mode-locked oscillator. The regenerative amplifier is implemented in a chirped pulse amplification system and operates at an ambient temperature in air, delivering ultrastable output pulses at a 5 kHz repetition rate and with a root mean square power noise value of less than 0.5%. Second harmonic generation of the amplifier's output in a 1.5 mm-thick BBO crystal results in more than 70 W at 515 nm, making the system an attractive source for pumping optical parametric chirped pulse amplifiers in the visible and near-infrared spectral ranges. PMID:26977650

  5. An electron injector based on a high power X-band TWT amplifier

    International Nuclear Information System (INIS)

    Theoretical investigation of the interaction of electrons with an electromagnetic wave in a microwave amplifier indicates that nearly 50% of the electrons are in fact accelerated in the amplification process. These fast electrons are phase correlated at the output of an amplifier and they can be further accelerated. For a beam pulse of 100 nsec and an X-band amplifier, a train of about 1000 bunches can be achieved. Several schemes were considered. Here we present a uniform amplifier, a drift tube (were the slow electrons are dumped) and an accelerator section. With an initial current of 1200 A, and an input power of 20 kW we calculated electrons with energies of 6 MeV in buckets of 20 degree corresponding to about 1x1010 particles per bunch and an instantaneous current of more than 270 A; the total system length was 1.1 m

  6. Studies on Nd∶YAG Single-pass Amplifiers for High-power Q-switched Laser System

    Institute of Scientific and Technical Information of China (English)

    CAO Sansong(曹三松); ZHANG Xiangyang(张向阳); HUANG Yanlin(黄燕琳); LI Guangrong(李光荣); SU Xinzhi(苏心智)

    2002-01-01

    The output of Nd∶YAG single-pass laser amplifiers is studied analytically and experimentally. Methods of analysis for single-pass Nd∶YAG laser amplifier are presented. A flashlamp-pumped Q-switched Nd∶YAG oscillator/amplifier laser system has been developed with the average output power of 121.5 W.

  7. Solid State Power Amplifier for 805 MegaHertz at the Los Alamos Neutron Science Center

    International Nuclear Information System (INIS)

    Particle accelerators for protons, electrons, and other ion species often use high-power vacuum tubes for RF amplification, due to the high RF power requirements to accelerate these particles with high beam currents. The final power amplifier stages driving large accelerators are unable to be converted to solid-state devices with the present technology. In some instances, radiation levels preclude the use of transistors near beamlines. Work is being done worldwide to replace the RF power stages under about ten kilowatts CW with transistor amplifiers, due to the lower maintenance costs and obsolescence of power tubes in these ranges. This is especially practical where the stages drive fifty Ohm impedance and are not located in high radiation zones. The authors are doing this at the Los Alamos Neutron Science Center (LANSCE) proton linear accelerator (linac) in New Mexico. They replaced a physically-large air-cooled UHF power amplifier using a tetrode electron tube with a compact water-cooled unit based on modular amplifier pallets developed at LANSCE. Each module uses eight push-pull bipolar power transistor pairs operated in class AB. Four pallets can easily provide up to 2,800 watts of continuous RF at 805 MHz. A radial splitter and combiner parallels the modules. This amplifier has proven to be completely reliable after over 10,000 hours of operation without failure. A second unit was constructed and installed for redundancy, and the old tetrode system was removed in 1998. The compact packaging for cooling, DC power, impedance matching, RF interconnection, and power combining met the electrical and mechanical requirements. CRT display of individual collector currents and RF levels is made possible with built-in samplers and a VXI data acquisition unit

  8. Selection of an efficient power supply and heat dissipation of multi-channel power amplifiers in APAA

    OpenAIRE

    Chukhmanov, V. V.

    2015-01-01

    When increasing a range of radar with an active phased antenna array (APAA) it is needed to generate pulses of increased power. To solve this problem, we use the multi-channel power amplifiers (MCPA) with extreme power levels under certain restrictions. Their practical implementation in radar is determined by an appropriate selection of efficient power supply and heat dissipation of the output transistors. From a variety of component units and products, as well as from constructive and techno...

  9. A 2.4-GHz SiGe HBT power amplifier with bias current controlling circuit

    Institute of Scientific and Technical Information of China (English)

    Peng Yanjun; Song Jiayou; Wang Zhigong; Tsang K F

    2009-01-01

    A 2.4-GHz SiGe HBT power amplifier (PA) with a novel bias current controlling circuit has been realized in IBM 0.35-μm SiGe BiCMOS technology, BiCMOS5PAe. The bias circuit switches the quiescent current to make the PA operate in a high or low power mode. Under a single supply voltage of 3.5 V, the two-stage mode-switchable power amplifier provides a PAE improvement up to 56.7% and 19.2% at an output power of 0 and 20 dBm, respectively, with a reduced quiescent current in the low power mode as compared to only operating the PA in the high power mode. The die size is only 1.32 × 1.37 mm2.

  10. A Novel Power Amplifier Behavior Modeling Based on RBF Neural Network with Chaos Particle Swarm Optimization Algorithm

    OpenAIRE

    Mingming Gao; Jingchang Nan; Surina Wang

    2014-01-01

    In order to design and optimize high-linearity power amplifier (PA), which with nonlinear and memory effect, it is very important to build power amplifier behavior modeling accurately. This paper proposes a power amplifier behavior modeling based on RBF neural network with improved chaos particle swarm optimization algorithm. To make the particles evenly distribute in the problem search space, a novel Chaos Particle Swarm Optimization (CPSO) is proposed based on the analysis of the ergodicity...

  11. A Low-Power 9-bit Pipelined CMOS ADC with Amplifier and Comparator Sharing Technique

    OpenAIRE

    Bocharov, Yuri; Butuzov, Vladimir; Osipov, Dmitry

    2012-01-01

    This paper describes a pipelined analog-to-digital converter (ADC) employing a power and area efficient architecture. The adjacent stages of a pipeline share operational amplifiers. In order to keep accuracy of the amplifiers in the first stages, they use a partially sharing technique. The feature of the proposed scheme is that it also shares the comparators. The capacitors of the first stages of a pipeline are scaled down along a pipeline for a further reducing the chip area and its power co...

  12. Linearization and efficiency enhancement techniques for silicon power amplifiers from RF to mmW

    CERN Document Server

    Kerhervé, Eric

    2015-01-01

    This book provides an overview of current efficiency enhancement and linearization techniques for silicon power amplifier designs. It examines the latest state of the art technologies and design techniques to address challenges for RF cellular mobile, base stations, and RF and mmW WLAN applications. Coverage includes material on current silicon (CMOS, SiGe) RF and mmW power amplifier designs, focusing on advantages and disadvantages compared with traditional GaAs implementations. With this book you will learn: The principles of linearization and efficiency improvement techniquesThe arch

  13. A 1-Watt Ku-band Power Amplifier MMIC using Cost-effective Organic SMD Package

    OpenAIRE

    Saboureau, C.; Heijningen, M. van; Priday, J.; Besselmoulin, A.; Parisot, M.; Quentin, P.

    2004-01-01

    This paper presents the design and performance of a compact 1-Watt Ku-band power amplifier MMIC implemented in a novel microwave organic power package, compatible with SMD assembly lines. Due to the use of simple materials, like RO4003 substrate and copper, it allows significant cost reduction for RF module assembly. The packaged amplifier MMIC demonstrates as well, very high-gain, as high as 32 dB at Ku-band, under very stable conditions, and more than 1.25-Watt continuous-wave o...

  14. 1 GHz GaAs Buck Converter for High Power Amplifier Modulation Applications

    OpenAIRE

    Busking, E.B.; Hek, A.P. de; Vliet, F.E. van

    2012-01-01

    A fully integrated 1 GHz buck converter output stage, including on-chip inductor and DC output filtering has been realized, in a standard high-voltage breakdown GaAs MMIC technology. This is a significant step forward in designing highspeed power control of supply-modulated HPAs (high power amplifiers). Agile power controlled HPAs are intended to find application in high-efficiency transmitters for both radio communication and radar applications, especially in which phased array transmit chai...

  15. High-Performance Solid-State W-Band Power Amplifiers

    Science.gov (United States)

    Gaier, Todd; Samoska, Lorene; Wells, Mary; Ferber, Robert; Pearson, John; Campbell, April; Peralta, Alejandro; Swift, Gerald; Yocum, Paul; Chung, Yun

    2003-01-01

    The figure shows one of four solid-state power amplifiers, each capable of generating an output power greater than or equal to 240 mW over one of four overlapping frequency bands from 71 to 106 GHz. (The bands are 71 to 84, 80 to 92, 88 to 99, and 89 to 106 GHz.) The amplifiers are designed for optimum performance at a temperature of 130 K. These amplifiers were developed specifically for incorporation into frequency-multiplier chains in local oscillators in a low-noise, far-infrared receiving instrument to be launched into outer space to make astrophysical observations. The designs of these amplifiers may also be of interest to designers and manufacturers of terrestrial W-band communication and radar systems. Each amplifier includes a set of six high-electron-mobility transistor (HEMT) GaAs monolithic microwave integrated-circuit (MMIC) chips, microstrip cavities, and other components packaged in a housing made from A-40 silicon-aluminum alloy. This alloy was chosen because, for the original intended spacecraft application, it offers an acceptable compromise among the partially competing requirements for high thermal conductivity, low mass, and low thermal expansion. Problems that were solved in designing the amplifiers included designing connectors and packages to fit the available space; designing microstrip signal-power splitters and combiners; matching of impedances across the frequency bands; matching of the electrical characteristics of those chips installed in parallel power-combining arms; control and levelling of output power across the bands; and designing the MMICs, microstrips, and microstrip cavities to suppress tendencies toward oscillation in several modes, both inside and outside the desired frequency bands.

  16. Broadband Fiber Raman Power-Amplifier for Narrow Linewidth Tunable Seed Lasers Used in Spectroscopic Sensing Project

    Data.gov (United States)

    National Aeronautics and Space Administration — We propose an energy and space efficient high power continuous wave (cw) narrow linewidth broadband fiber Raman amplifier (FRA) with spectrally tunable...

  17. Femtosecond Innoslab amplifier with 300W average power and pulse energies in the mJ-regime

    Science.gov (United States)

    Mans, T.; Graf, R.; Dolkemeyer, J.; Schnitzler, C.

    2014-02-01

    We demonstrate a femtosecond Yb:YAG InnoSlab laser amplifier producing powers High energy and high average power could be obtained with the use of chirped pulse amplification on the power amplifier end. The laser setup consists of a seed laser with 10mW average power at pulse repetition rates of 100kHz to 1MHz, a pre-amplifier stage, a highpower InnoSlab-amplifier stage and a grating based pulse compressor. This laser source is suited for pumping of OPCPA setups und parallelisation of applications in materials processing.

  18. Demonstration of a 10 kW average power 94 GHz gyroklystron amplifier

    Science.gov (United States)

    Blank, M.; Danly, B. G.; Levush, B.; Calame, J. P.; Nguyen, K.; Pershing, D.; Petillo, J.; Hargreaves, T. A.; True, R. B.; Theiss, A. J.; Good, G. R.; Felch, K.; James, B. G.; Borchard, P.; Cahalan, P.; Chu, T. S.; Jory, H.; Lawson, W. G.; Antonsen, T. M.

    1999-12-01

    The experimental demonstration of a high average power W-band (75-110 GHz) gyroklystron amplifier is reported. The gyroklystron has produced 118 AW peak output power and 29.5% electronic efficiency in the TE011 mode using a 66.7 kV, 6 A electron beam at 0.2% rf duty factor. At this operating point, the instantaneous full width at half-maximum (FWHM) bandwidth is 600 MHz. At 11% rf duty factor, the gyroklystron has produced up to 10.1 kW average power at 33% electronic efficiency with a 66 kV, 4.15 A electron beam. This represents world record performance for an amplifier at this frequency. At the 10.1 kW average power operating point, the FWHM bandwidth is 420 MHz. At higher magnetic fields and lower beam voltages, larger bandwidths can be achieved at the expense of peak and average output power.

  19. Development of High Power Amplifiers for Space and Ground-based Applications

    DEFF Research Database (Denmark)

    Hernández, Carlos Cilla

    Circuit GaN technology is discussed. The design will be used as a baseline for future developments of the next generation of the Sentinel satellite remote sensing radar T/R modules. The twostage design features a 6730 X 3750 µm2 compact footprint. The overlapping between simulated intrinsic drain current...... technology is the alternative to the tube-based amplifiers. Recently, there has been a renewed interest in this research field thanks, to a large extent, to the development of GaN semiconductor technology, that is already having an important impact on the wireless and radar market. The scope of this Ph......D dissertation lies in the development of nonlinear design methodologies, manufacturing, and efficient testing of Solid State High Power Amplifier modules, with special focus on GaN state of the art technology. It is possible to identify two types of GaN Solid State High Power Amplifiers: the Hybrids and the...

  20. Compressed sensing based joint-compensation of power amplifier's distortions in OFDMA cognitive radio systems

    KAUST Repository

    Ali, Anum Z.

    2013-12-01

    Linearization of user equipment power amplifiers driven by orthogonal frequency division multiplexing signals is addressed in this paper. Particular attention is paid to the power efficient operation of an orthogonal frequency division multiple access cognitive radio system and realization of such a system using compressed sensing. Specifically, precompensated overdriven amplifiers are employed at the mobile terminal. Over-driven amplifiers result in in-band distortions and out of band interference. Out of band interference mostly occupies the spectrum of inactive users, whereas the in-band distortions are mitigated using compressed sensing at the receiver. It is also shown that the performance of the proposed scheme can be further enhanced using multiple measurements of the distortion signal in single-input multi-output systems. Numerical results verify the ability of the proposed setup to improve error vector magnitude, bit error rate, outage capacity and mean squared error. © 2011 IEEE.

  1. Mode control in a high gain relativistic klystron amplifier with 3 GW output power

    International Nuclear Information System (INIS)

    Higher mode excitation is very serious in the relativistic klystron amplifier, especially for the high gain relativistic amplifier working at tens of kilo-amperes. The mechanism of higher mode excitation is explored in the PIC simulation and it is shown that insufficient separation of adjacent cavities is the main cause of higher mode excitation. So RF lossy material mounted on the drift tube wall is adopted to suppress higher mode excitation. A high gain S-band relativistic klystron amplifier is designed for the beam current of 13 kA and the voltage of 1 MV. PIC simulation shows that the output power is 3.2 GW when the input power is only 2.8 kW. (authors)

  2. Thermo-optical effects in high-power Ytterbium-doped fiber amplifiers

    DEFF Research Database (Denmark)

    Hansen, Kristian Rymann; Alkeskjold, Thomas Tanggaard; Broeng, Jes;

    2011-01-01

    We investigate the effect of temperature gradients in high-power Yb-doped fiber amplifiers by a numerical beam propagation model, which takes thermal effects into account in a self-consistent way. The thermally induced change in the refractive index of the fiber leads to a thermal lensing effect...

  3. Impact of Nonlinear Power Amplifier on Link Adaptation Algorithm of OFDM Systems

    DEFF Research Database (Denmark)

    Das, Suvra S.; Tariq, Faisal; Rahman, Muhammad Imadur; Frederiksen, Flemming Bjerge; De Carvalho, Elisabeth; Prasad, Ramjee

    2007-01-01

    The impact of non linear distortion due to High Power Amplifier (HPA) on the performance of Link Adaptation (LA) - Orthogonal Frequency Division Multiplexing (OFDM) based wireless system is analyzed. The performance of both Forward Error Control Coding (FEC) en-coded and uncoded system is evaluated...

  4. Bondwire array modeling for the design of hybrid high power amplifiers above C-band

    DEFF Research Database (Denmark)

    Hernández, Carlos Cilla; Jónasson, Sævar Þór; Hanberg, Jesper

    2012-01-01

    simulate the large bondwire arrays that are used in long multi-transistor power bars. The usefulness of an accurate 3D EM model during the amplifier's matching network design process is highlighted using a practical example, and the effect of the insertion loss variations along the different bondwires...

  5. LD pumped Yb:YAG regenerative amplifier for high average power short-pulse generation

    International Nuclear Information System (INIS)

    A diode pumped Yb:YAG regenerative amplifier has been developed for short pulse generation. High gain and efficient cooling characteristics were achieved in the laser gain module using a thin square-rod laser structure. Average output power of 10 W was realized at a pulse repetition rate of 100 kHz with 6.2 ps pulse width

  6. Development of 325 MHz 1.8 kW pulse RF power amplifier

    International Nuclear Information System (INIS)

    With the advancement in the RF MOSFET fabrication technologies newer and newer devices are available with improved performance. This progress is guiding the path to develop solid state power amplifiers (SSPA) for medium to high power RF applications. Researchers and developers around the world, are now developing high power solid state RF sources, in place of old tube based (Klystron or Tetrodes like) sources. The advantages of solid state are extreme modularity, high reliability, graceful degradation, indigenous development, better signal quality, safe operation, minimum time to repair and high life span. In this view, a pulsed RF power amplifier has been developed which works at 325 MHz frequency and can deliver peak power up to 1.8 kW. It utilizes two push-pull RF MOSFETs each about 1 kW of power ratting. The frequency and pulse parameters have been decided on the basis of its targeted application in upcoming H- Linac and SNS projects. A number of such amplifiers (in hundreds of numbers) will be built and utilized in the development of final solid state RF power source. (author)

  7. High power, continuous-wave, single frequency fiber amplifier at 1091 nm and frequency doubling to 545.5 nm

    OpenAIRE

    Stappel, M.; Steinborn, R.; Kolbe, D.; Walz, J

    2012-01-01

    We present a high power single-frequency ytterbium fiber amplifier system with an output power of 30 W at 1091 nm. The amplifier system consists of two stages, a preamplifier stage in which amplified spontaneous emission is efficiently suppressed (>40 dB) and a high power amplifier with an efficiency of 52 %. Two different approaches of frequency doubling are compared. We achieve 8.6 W at 545.5 nm by single-pass frequency doubling in a MgO-doped periodically poled stoichiometric LiTaO3 and up...

  8. Design and development of HV power supply with crowbar protection for screen electrode of RF amplifier

    International Nuclear Information System (INIS)

    K-130 room temperature Cyclotron is being renovated at VECC. Radio frequency system is most vital part of cyclotron which is also under modification. The screen biasing plays most critical role in tetrode power amplifiers. A high voltage power supply (1.5 kV and 1.0 A) with fast crowbar protection is required for screen electrode biasing of rf amplifier tube. This power supply is facilitated with primary variac control regulation loop. The EIMAC 4CW2000 tube is connected in shunt for closed loop ripple rejection of load. This active ripple rejecter reduces capacitor filter size as well as stored energy. Crowbar protection is incorporated by using thyristers. Crowbar protection scheme is designed in such a way, it divert the energy from screen electrode, in case any unfavourable condition occurring with tube. This paper presents detailed design, development and testing results of HV power supply for screen electrodes with fast crowbar protection. (author)

  9. Small signal audio design

    CERN Document Server

    Self, Douglas

    2014-01-01

    Learn to use inexpensive and readily available parts to obtain state-of-the-art performance in all the vital parameters of noise, distortion, crosstalk and so on. With ample coverage of preamplifiers and mixers and a new chapter on headphone amplifiers, this practical handbook provides an extensive repertoire of circuits that can be put together to make almost any type of audio system.A resource packed full of valuable information, with virtually every page revealing nuggets of specialized knowledge not found elsewhere. Essential points of theory that bear on practical performance are lucidly

  10. Hybrid master oscillator power amplifier high-power narrow-linewidth nanosecond laser source at 257 nm.

    Science.gov (United States)

    Délen, Xavier; Deyra, Loïc; Benoit, Aurélien; Hanna, Marc; Balembois, François; Cocquelin, Benjamin; Sangla, Damien; Salin, François; Didierjean, Julien; Georges, Patrick

    2013-03-15

    We report on a high-power narrow-linewidth pulsed laser source emitting at a wavelength of 257 nm. The system is based on a master oscillator power amplifier architecture, with Yb-doped fiber preamplifiers, a Yb:YAG single crystal fiber power amplifier used to overcome the Brillouin limitation in glass fiber and nonlinear frequency conversion stages. This particularly versatile architecture allows the generation of Fourier transform-limited 15 ns pulses at 1030 nm with 22 W of average power and a diffraction-limited beam (M(2)<1.1). At a repetition rate of 30 kHz, 106 μJ UV pulses are generated corresponding to an average power of 3.2 W. PMID:23503285

  11. Recent Advances in High Power Millimeter Wave Gyroklystron Amplifiers at NRL

    Science.gov (United States)

    Danly, B. G.

    1998-04-01

    Amplifiers based on the electron cyclotron resonance maser or gyrotron interaction are capable of producing both high peak and high average powers in the millimeter wave band. These devices are of interest for a variety of applications including use in millimeter wave radars and as drivers for high frequency RF accelerators. Recent progress on 35 GHz and 93 GHz gyroklystron and gyrotwystron amplifiers in the Vacuum Electronics Branch of the Naval Research Laboratory will be described. At 35 GHz, a two-cavity device has produced up to 210 kW peak power at 37% efficiency with limited bandwidth( J.J. Choi, A.H. McCurdy, F. Wood, R.H. Kyser, J. Calame, K. Nguyen, B.G. Danly, T.M. Antonsen Jr., B. Levush, and R.K. Parker, Experimental Investigation of a High Power, Two-Cavity, 35 GHz Gyroklystron Amplifier IEEE Trans.Plasma Sci., To Be Published, 1998.), and a three-cavity device has produced up to 225 kW peak power with 0.6% bandwidth. At 93 GHz, successive experimental four-cavity gyroklystrons have produced up to 67 kW with 460 MHz bandwidth and 60 kW with 640 MHz bandwidth(M. Blank, B.G. Danly, B. Levush, P.E. Latham, and D. Pershing, Experimental Demonstration of a W-Band Gyroklystron Amplifier Phys.Rev.Lett., vol. 79, pp. 4485-4488, 1997.). These amplifiers have had gains in the 27 - 30 dB range. The experimental results are in excellent agreement with theoretical predictions. Recent progress will be detailed, and opportunities for higher power and bandwidth will be discussed.

  12. Suppression of stimulated Brillouin scattering in high power fibre lasers and amplifiers

    OpenAIRE

    Hernandez-Solis, Vladimir

    2009-01-01

    Fibre sources in high power devices have significant advantages over conventional gas and solid state lasers. However, for applications that require the so-called singlefrequency sources with narrow linewidths, the output power is low mainly because of the problem of the stimulated Brillouin scattering (SBS). A model that accounts for the SBS in dual-clad fibre lasers and amplifiers is presented. This was carried out in order to study the key parameters that affect the Brillouin threshold...

  13. A 32-GHz solid-state power amplifier for deep space communications

    Science.gov (United States)

    Wamhof, P. D.; Rascoe, D. L.; Lee, K. A.; Lansing, F. S.

    1994-01-01

    A 1.5-W solid-state power amplifier (SSPA) has been demonstrated as part of an effort to develop and evaluate state-of-the-art transmitter and receiver components at 32 and 35 GHz for future deep space missions. Output power and efficiency measurements for a monolithic millimeter-wave integrated circuit (MMIC)-based SSPA are reported. Technical design details for the various modules and a thermal analysis are discussed, as well as future plans.

  14. High-speed thyristor power amplifier control for the JT-60 poloidal field

    International Nuclear Information System (INIS)

    In undertaking basic research into a high power thyristor amplifier system for the JT-60, we have developed direct computer control employing modern control theory, and have experimented on a small model system. This paper describes how to attain the required high speed and accuracy and the hardware. To simulate the actual system, a model system composed of a flywheel driven a-c generator, a computer-controlled thyristor amplifier and three coupled magnetic field coils was used. From the experimental results, 0.2% static accuracy, 0.5% dynamic accuracy and 3 msec control delay were obtained. (author)

  15. A Two-Step Identification Approach for Twin-Box Models of RF Power Amplifier

    Directory of Open Access Journals (Sweden)

    You-Jiang Liu

    2011-01-01

    Full Text Available We propose a two-step identification approach for twin-box model (Wiener or Hammerstein of RF power amplifier. The linear filter block and the static nonlinearity block are extracted, respectively, based on least-squares method, by iterative calculation. Simulations show that the method can get quite accurate parameters to model different nonlinear models with memory such as Wiener, Hammerstein, Wiener-Hammerstein (W-H, and memory polynomial models, hence, demonstrating its robustness. Furthermore, experimental results show excellent agreement between measured output and modeled output, where one carrier WCDMA signal is used as the excitation for a wideband RF amplifier.

  16. Efficiency Investigation of Switch Mode Power Amplifier Drving Low Impedance Transducers

    DEFF Research Database (Denmark)

    Iversen, Niels Elkjær; Schneider, Henrik; Knott, Arnold;

    2015-01-01

    the amplifier rail voltage requirement as a function of the voice coil nominal resistance is presented. The method is based on a crest factor analysis of music signals and estimation of the electrical power requirement from a specific target of the sound pressure level. Experimental measurements......The typical nominal resistance span of an electro dynamic transducer is 4 Ω to 8 Ω. This work examines the possibility of driving a transducer with a much lower impedance to enable the amplifier and loudspeaker to be directly driven by a low voltage source such as a battery. A method for estimating...

  17. Dynamic Floating Output Stage for Low Power Buffer Amplifier for LCD Application

    Directory of Open Access Journals (Sweden)

    Hari Shanker Srivastava

    2015-02-01

    Full Text Available This topic proposes low-power buffer means low quiescent current buffer amplifier. A dynamic floating current node is used at the output of two-stage amplifier to increase the charging and discharging of output capacitor as well as settling time of buffer. It is designed for 10 bit digital analog converter to support for LCD column driver it is implemented in 180 nm CMOS technology with the quiescent current of 5 µA for 30 pF capacitance, the settling time calculated as 4.5µs, the slew rate obtained as 5V/µs and area on chip is 30×72µ

  18. Cryogenic Yb:YAG composite-thin-disk for high energy and average power amplifiers

    OpenAIRE

    Zapata, Luis E.; Lin, Hua; Calendron, Anne-Laure; Cankaya, Huseyin; Hemmer, Michael; Reichert, Fabian; Huang, W. Ronny; Granados, Eduardo; Hong, Kyung-Han; Kärtner, Franz X.

    2015-01-01

    A cryogenic composite-thin-disk amplifier with amplified spontaneous emission (ASE) rejection is implemented that overcomes traditional laser system problems in high-energy pulsed laser drivers of high average power. A small signal gain of 8 dB was compared to a 1.5 dB gain for an uncapped thin-disk without ASE mitigation under identical pumping conditions. A strict image relayed 12-pass architecture using an off-axis vacuum telescope and polarization switching extracted 100 mJ at 250 Hz in h...

  19. F-band, High-Efficiency GaN Power Amplifier for the Scanning Microwave Limb Sounder and SOFIA Project

    Data.gov (United States)

    National Aeronautics and Space Administration — QuinStar Technology proposes to develop a 4-watt Solid-State Power Amplifier (SSPA) operating at F-band (106-114 GHz) with a power-added efficiency (PAE) of greater...

  20. Solid-state wideband GaN HEMT power amplifier with a novel negative feedback structure

    Science.gov (United States)

    Zhiqun, Cheng; Minshi, Jia; Ya, Luan; Xinxiang, Lian

    2014-12-01

    The design and fabrication of an ultra-broadband power amplifier based on a GaN HEMT, which operates in the frequency range from 3 to 8 GHz, is presented in this paper. A TGF2023-02 GaN HEMT chip from TriQuint is adopted and modeled. A novel negative feedback structure is applied in the circuit. The measured results show that the amplifier module has a wide range frequency response that is almost consistent with those of simulation at frequencies from 3 to 6.5 GHz. The measured power gain is greater than 7 dB between 3 and 6.5 GHz. The saturated output power is 38.5 dBm under DC bias of Vds = 28 V, Vgs = -3.5 V at the frequency of 5.5 GHz.

  1. Solid-state wideband GaN HEMT power amplifier with a novel negative feedback structure

    International Nuclear Information System (INIS)

    The design and fabrication of an ultra-broadband power amplifier based on a GaN HEMT, which operates in the frequency range from 3 to 8 GHz, is presented in this paper. A TGF2023-02 GaN HEMT chip from TriQuint is adopted and modeled. A novel negative feedback structure is applied in the circuit. The measured results show that the amplifier module has a wide range frequency response that is almost consistent with those of simulation at frequencies from 3 to 6.5 GHz. The measured power gain is greater than 7 dB between 3 and 6.5 GHz. The saturated output power is 38.5 dBm under DC bias of Vds = 28 V, Vgs = −3.5 V at the frequency of 5.5 GHz. (semiconductor integrated circuits)

  2. Cryogenic ultra-low power dissipation operational amplifiers with GaAs JFETs

    Science.gov (United States)

    Hibi, Yasunori; Matsuo, Hiroshi; Ikeda, Hirokazu; Fujiwara, Mikio; Kang, Lin; Chen, Jian; Wu, Peiheng

    2016-01-01

    To realize a multipixel camera for astronomical observation, we developed cryogenic multi-channel readout systems using gallium arsenide junction field-effect transistor (GaAs JFET) integrated circuits (ICs). Based on our experience with these cryogenic ICs, we designed, manufactured, and demonstrated operational amplifiers requiring four power supplies and two voltage sources. The amplifiers operate at 4.2 K with an open-loop gain of 2000. The gain-bandwidth product can expect 400 kHz at a power dissipation of 6 μW. In performance evaluations, the input-referred voltage noise was 4 μVrms/Hz0.5 at 1 Hz and 30 nVrms/Hz0.5 at 10 kHz, respectively. The noise power spectrum density was of type 1/f and extended to 10 kHz.

  3. High power continuous operation of a widely tunable quantum cascade laser with an integrated amplifier

    Energy Technology Data Exchange (ETDEWEB)

    Slivken, S.; Sengupta, S.; Razeghi, M., E-mail: razeghi@eecs.northwestern.edu [Center for Quantum Devices, Department of Electrical Engineering and Computer Science, Northwestern University, Evanston, Illinois 60208 (United States)

    2015-12-21

    Wide electrical tuning and high continuous output power is demonstrated from a single mode quantum cascade laser emitting at a wavelength near 4.8 μm. This is achieved in a space efficient manner by integrating an asymmetric sampled grating distributed feedback tunable laser with an optical amplifier. An initial demonstration of high peak power operation in pulsed mode is demonstrated first, with >5 W output over a 270 nm (113 cm{sup −1}) spectral range. Refinement of the geometry leads to continuous operation with a single mode spectral coverage of 300 nm (120 cm{sup −1}) and a maximum continuous power of 1.25 W. The output beam is shown to be nearly diffraction-limited, even at high amplifier current.

  4. High power continuous operation of a widely tunable quantum cascade laser with an integrated amplifier

    Science.gov (United States)

    Slivken, S.; Sengupta, S.; Razeghi, M.

    2015-12-01

    Wide electrical tuning and high continuous output power is demonstrated from a single mode quantum cascade laser emitting at a wavelength near 4.8 μm. This is achieved in a space efficient manner by integrating an asymmetric sampled grating distributed feedback tunable laser with an optical amplifier. An initial demonstration of high peak power operation in pulsed mode is demonstrated first, with >5 W output over a 270 nm (113 cm-1) spectral range. Refinement of the geometry leads to continuous operation with a single mode spectral coverage of 300 nm (120 cm-1) and a maximum continuous power of 1.25 W. The output beam is shown to be nearly diffraction-limited, even at high amplifier current.

  5. High power continuous operation of a widely tunable quantum cascade laser with an integrated amplifier

    International Nuclear Information System (INIS)

    Wide electrical tuning and high continuous output power is demonstrated from a single mode quantum cascade laser emitting at a wavelength near 4.8 μm. This is achieved in a space efficient manner by integrating an asymmetric sampled grating distributed feedback tunable laser with an optical amplifier. An initial demonstration of high peak power operation in pulsed mode is demonstrated first, with >5 W output over a 270 nm (113 cm−1) spectral range. Refinement of the geometry leads to continuous operation with a single mode spectral coverage of 300 nm (120 cm−1) and a maximum continuous power of 1.25 W. The output beam is shown to be nearly diffraction-limited, even at high amplifier current

  6. High-power linearly-polarized picosecond thulium-doped all-fiber master-oscillator power-amplifier.

    Science.gov (United States)

    Liu, Jiang; Liu, Chen; Shi, Hongxing; Wang, Pu

    2016-06-27

    We demonstrated a linearly-polarized picosecond thulium-doped all-fiber-integrated master-oscillator power-amplifier system, which yielded 240 W of average output power at 127 MHz repetition rate. The seed source is a passively mode-locked polarization-maintaining thulium-doped all-fiber oscillator with a nearly transform-limited pulse duration of 10 ps. In combination with a pre-chirp fiber having a positive group velocity dispersion and a three stage polarization-maintaining thulium-doped all-fiber amplifier, output pulse energies up to 1.89 µJ with 42 kW pulse peak power are obtained without the need of complex free-space stretcher or compressor setups. To the best of our knowledge, this is the highest average output power ever reported for a picosecond all-fiber-integrated laser at 2 µm wavelength region. PMID:27410651

  7. Automatic frequency controller for power amplifiers used in bio-implanted applications: issues and challenges.

    Science.gov (United States)

    Hannan, Mahammad A; Hussein, Hussein A; Mutashar, Saad; Samad, Salina A; Hussain, Aini

    2014-01-01

    With the development of communication technologies, the use of wireless systems in biomedical implanted devices has become very useful. Bio-implantable devices are electronic devices which are used for treatment and monitoring brain implants, pacemakers, cochlear implants, retinal implants and so on. The inductive coupling link is used to transmit power and data between the primary and secondary sides of the biomedical implanted system, in which efficient power amplifier is very much needed to ensure the best data transmission rates and low power losses. However, the efficiency of the implanted devices depends on the circuit design, controller, load variation, changes of radio frequency coil's mutual displacement and coupling coefficients. This paper provides a comprehensive survey on various power amplifier classes and their characteristics, efficiency and controller techniques that have been used in bio-implants. The automatic frequency controller used in biomedical implants such as gate drive switching control, closed loop power control, voltage controlled oscillator, capacitor control and microcontroller frequency control have been explained. Most of these techniques keep the resonance frequency stable in transcutaneous power transfer between the external coil and the coil implanted inside the body. Detailed information including carrier frequency, power efficiency, coils displacement, power consumption, supplied voltage and CMOS chip for the controllers techniques are investigated and summarized in the provided tables. From the rigorous review, it is observed that the existing automatic frequency controller technologies are more or less can capable of performing well in the implant devices; however, the systems are still not up to the mark. Accordingly, current challenges and problems of the typical automatic frequency controller techniques for power amplifiers are illustrated, with a brief suggestions and discussion section concerning the progress of

  8. Automatic Frequency Controller for Power Amplifiers Used in Bio-Implanted Applications: Issues and Challenges

    Directory of Open Access Journals (Sweden)

    Mahammad A. Hannan

    2014-12-01

    Full Text Available With the development of communication technologies, the use of wireless systems in biomedical implanted devices has become very useful. Bio-implantable devices are electronic devices which are used for treatment and monitoring brain implants, pacemakers, cochlear implants, retinal implants and so on. The inductive coupling link is used to transmit power and data between the primary and secondary sides of the biomedical implanted system, in which efficient power amplifier is very much needed to ensure the best data transmission rates and low power losses. However, the efficiency of the implanted devices depends on the circuit design, controller, load variation, changes of radio frequency coil’s mutual displacement and coupling coefficients. This paper provides a comprehensive survey on various power amplifier classes and their characteristics, efficiency and controller techniques that have been used in bio-implants. The automatic frequency controller used in biomedical implants such as gate drive switching control, closed loop power control, voltage controlled oscillator, capacitor control and microcontroller frequency control have been explained. Most of these techniques keep the resonance frequency stable in transcutaneous power transfer between the external coil and the coil implanted inside the body. Detailed information including carrier frequency, power efficiency, coils displacement, power consumption, supplied voltage and CMOS chip for the controllers techniques are investigated and summarized in the provided tables. From the rigorous review, it is observed that the existing automatic frequency controller technologies are more or less can capable of performing well in the implant devices; however, the systems are still not up to the mark. Accordingly, current challenges and problems of the typical automatic frequency controller techniques for power amplifiers are illustrated, with a brief suggestions and discussion section concerning

  9. Design and development of 50 V, 300 A pulse power supply for solid state RF amplifiers

    International Nuclear Information System (INIS)

    A 50 V, 300 A pulse power supply has been designed and developed to bias pulsed RF amplifiers for Spallation Neutron Source (SNS). This power supply has four pulse modules of 50 V, 75 A each, to drive four numbers of pulse RF amplifiers simultaneously. A capacitor bank is charged by a 50 V, 40 A, DC power supply operating in CCCV mode and energy stored in it is utilized for generating output pulses with the help of MOSFET switches employed in pulse modules. An external trigger pulse is used to synchronize the output pulses of all pulse modules within the pulse power supply, and it can also be utilized to synchronize several such pulse power supplies required for high power pulse application. The drive pulses of desired duty cycle and frequency are sent through gate driver circuits to MOSFET switches used in pulse modules. Adequate steps have been taken for minimizing the overshoot and ringing in the output pulse and have been presented in this paper. Efforts have been put to equalize the lengths of the wires used in the power path of each module of this power supply. The ON period of the output pulse can be varied from 500 μS to 2 mS with repetition frequency of 50 Hz. This pulse power supply was first tested on resistive dummy load at various duty cycle points. The rise time and fall time of the pulse was observed to be less than 5μS and pulse droop was observed to be less than 0.5% when each pulse module was tested up to 75 A peak current. The pulse power supply was also tested with solid state RF amplifier and test results are presented in this paper. (author)

  10. A High-Voltage class-D power amplifier with switching frequency regulation for improved high-efficiency output power range

    OpenAIRE

    Ma, Haifeng; Zee, van der, S.E.A.T.M.; Nauta, Bram

    2015-01-01

    This paper describes the power dissipation analysis and the design of an efficiency-improved high-voltage class-D power amplifier. The amplifier adaptively regulates its switching frequency for optimal power efficiency across the full output power range. This is based on detecting the switching output node voltage level at the turn-on transition of the power switches. Implemented in a 0.14 μm SOI BCD process, the amplifier achieves 93% efficiency at 45 W output power, > 80% power efficiency d...

  11. A 168-W high-power single-frequency amplifier in an all-fiber configuration

    International Nuclear Information System (INIS)

    We present a high-power, single-frequency, narrow linewidth fiber amplifier based on master oscillator power amplification chains in an all-fiber configuration. The effect of the delivery fiber on the maximum output power is studied. A home-made 1064-nm seed laser with a 20-kHz linewidth is boosted to 129 W, and limited by stimulated Brillouin scattering (SBS) when the delivery fiber is 1.2 m long. By shortening the delivery fiber length to 0.7 m, the SBS threshold is increased efficiently and the maximum output power rises to 168 W with an 82.9% power conversion efficiency. The experimental results indicate that the output power can be further raised by shortening the delivery fiber length and increasing the pump power. (electromagnetism, optics, acoustics, heat transfer, classical mechanics, and fluid dynamics)

  12. A Dynamic Instrumentation Amplifier for Low-Power and Low-Noise Biopotential Acquisition

    Directory of Open Access Journals (Sweden)

    Jongpal Kim

    2016-03-01

    Full Text Available A low-power and low-noise dynamic instrumentation amplifier (IA for biopotential acquisition is presented. A dynamic IA that can reduce power consumption with a timely piecewise power-gating method, and noise level with an alternating input and chopper stabilization technique is fabricated with a 0.13-μm CMOS. Using the reconfigurable architecture of the IA, various combinations of the low-noise schemes are investigated. The combination of power gating and chopper stabilization shows a lower noise performance than the combination of power gating and alternating input switching scheme. This dynamic IA achieved a power reduction level of 50% from 10 µA to 5 µA and a noise reduction of 90% from 9.1 µVrms to 0.92 µVrms with the combination of the power gating and chopper stabilization scheme.

  13. A Dynamic Instrumentation Amplifier for Low-Power and Low-Noise Biopotential Acquisition

    Science.gov (United States)

    Kim, Jongpal; Ko, Hyoungho

    2016-01-01

    A low-power and low-noise dynamic instrumentation amplifier (IA) for biopotential acquisition is presented. A dynamic IA that can reduce power consumption with a timely piecewise power-gating method, and noise level with an alternating input and chopper stabilization technique is fabricated with a 0.13-μm CMOS. Using the reconfigurable architecture of the IA, various combinations of the low-noise schemes are investigated. The combination of power gating and chopper stabilization shows a lower noise performance than the combination of power gating and alternating input switching scheme. This dynamic IA achieved a power reduction level of 50% from 10 µA to 5 µA and a noise reduction of 90% from 9.1 µVrms to 0.92 µVrms with the combination of the power gating and chopper stabilization scheme.

  14. A 65-nm low-noise low-cost ∑ △ modulator for audio applications

    Institute of Scientific and Technical Information of China (English)

    梁国; 廖璐; 罗豪; 刘晓鹏; 韩晓霞; 韩雁

    2012-01-01

    This paper introduces a low-noise low-cost ∑ △ modulator for digital audio analog-to-digital conversion.By adopting a low-noise large-output swing operation amplifier,not only is the flicker noise greatly inhibited,but also the power consumption is reduced.Also the area cost is relatively small.The modulator was implemented in a SMIC standard 65-nm CMOS process.Measurement results show it can achieve 96 dB peak signal-to-noise plus distortion ratio (SNDR) and 105 dB dynamic range (DR) over the 22.05-kHz audio band and occupies 0.16 mm2.The power consumption of the proposed modulator is 4.9 mW from a 2.5 V power supply,which is suitable for high-performance,low-cost audio codec applications.

  15. 2µm all-fiber dissipative soliton master oscillator power amplifier

    Science.gov (United States)

    Gaponov, D.; Lavoute, L.; Février, S.; Hideur, A.; Ducros, N.

    2016-03-01

    We present an all-fiber integrated master oscillator power amplifier operating at 1940 nm. The source delivers 422-nJ chirped pulses at a repetition rate of 10.18 MHz corresponding to 4.3 W of average power. The pulses were recompressed down to 900 fs yielding 220 kW of peak power. Stretching the pulse to 200 ps allows further energy scaling beyond the microjoule barrier at low repetition rate (Ep = 4 μJ at 92 kHz, Δτp =1.6 ps).

  16. A picosecond thin-rod Yb:YAG regenerative laser amplifier with the high average power of 20 W

    International Nuclear Information System (INIS)

    A high-average-power, laser-diode-pumped, picosecond-pulse regenerative amplifier was developed using the thin-rod Yb:YAG (yttrium aluminum garnet) laser architecture. This architecture has a complete set of favorable properties for the cost-effective, high-average-power, and high-peak-power lasers. These include low amplified spontaneous emission with high gain and high repetition rate. For the amplifier system, an average output power of 20 W was achieved at a pulse repetition rate of 100 kHz, which corresponds to an output pulse energy of 200 μJ with an output pulse width of 2 ps. (letter)

  17. A picosecond thin-rod Yb:YAG regenerative laser amplifier with the high average power of 20 W

    Science.gov (United States)

    Matsubara, S.; Tanaka, M.; Takama, M.; Hitotsuya, H.; Kobayashi, T.; Kawato, S.

    2013-05-01

    A high-average-power, laser-diode-pumped, picosecond-pulse regenerative amplifier was developed using the thin-rod Yb:YAG (yttrium aluminum garnet) laser architecture. This architecture has a complete set of favorable properties for the cost-effective, high-average-power, and high-peak-power lasers. These include low amplified spontaneous emission with high gain and high repetition rate. For the amplifier system, an average output power of 20 W was achieved at a pulse repetition rate of 100 kHz, which corresponds to an output pulse energy of 200 μJ with an output pulse width of 2 ps.

  18. Study of high-power Ka-band second-harmonic gyroklystron amplifier

    Energy Technology Data Exchange (ETDEWEB)

    Zasypkin, E.V.; Moiseev, M.A.; Gachev, I.G.; Antakov, I.I. [Russian Academy of Science, Nizhny Novgorod (Russian Federation). Inst. of Applied Physics

    1996-06-01

    The self-consistent nonlinear theory of two-cavity high-harmonic gyroklystron amplifier has been developed. The efficiency and gain of a second-harmonic gyroklystron were calculated numerically. The results obtained were used to choose the optimal parameters of the experimental second-harmonic tube. The experimental study was carried out to test high-harmonic amplifier concept. Two-cavity 35 GHz second-harmonic gyroklystron with the TE{sub 021} cavity mode has been designed and tested in pulse operation. Output power of about 260 kW with efficiency 18% and 17 dB gain have been produced at 72 kV beam voltage and 20 A beam current. Bandwidth of about 0.1% has been observed. The restriction of the output power, efficiency, and gain was caused by spurious oscillations excited in the second cavity in the TE{sub 011} mode at the fundamental cyclotron frequency.

  19. High Power Amplifiers Chain nonlinearity influence on the accelerating beam stability in free electron laser (FLASH)

    CERN Document Server

    Cichalewski, w

    2010-01-01

    The high power amplifiers transfer characteristics nonlinearities can have a negative influence on the overall system performance. This is also true for the TESLA superconducting cavities accelerating field parameters control systems. This Low Level Radio Frequency control systems uses microwave high power amplifiers (like 10 MW klystrons) as actuators in the mentioned feedback loops. The amplitude compression and phase deviations phenomena introduced to the control signals can reduce the feedback performance and cause electron beam energy instabilities. The transfer characteristics deviations in the Free Electron Laser in Hamburg experiment have been investigated. The outcome of this study together with the description of the developed linearization method based on the digital predistortion approach have been described in this paper. Additionally, the results from the linearization tool performance tests in the FLASH's RF systems have been placed.

  20. Radar Waveform Pulse Analysis Measurement System for High-Power GaN Amplifiers

    Science.gov (United States)

    Thrivikraman, Tushar; Perkovic-Martin, Dragana; Jenabi, Masud; Hoffman, James

    2012-01-01

    This work presents a measurement system to characterize the pulsed response of high-power GaN amplifiers for use in space-based SAR platforms that require very strict amplitude and phase stability. The measurement system is able to record and analyze data on three different time scales: fast, slow, and long, which allows for greater detail of the mechanisms that impact amplitude and phase stability. The system is fully automated through MATLAB, which offers both instrument control capability and in-situ data processing. To validate this system, a high-power GaN HEMT amplifier operated in saturation was characterized. The fast time results show that variations to the amplitude and phase are correlated to DC supply transients, while long time characteristics are correlated to temperature changes.

  1. Wavelet network based predistortion method for wideband RF power amplifiers exhibiting memory effects

    Institute of Scientific and Technical Information of China (English)

    JIN Zhe; SONG Zhi-huan; HE Jia-ming

    2007-01-01

    RF power amplifiers (PAs) are usually considered as memoryless devices in most existing predistortion techniques.Nevertheless, in wideband communication systems, PA memory effects can no longer be ignored and memoryless predistortion cannot linearize PAs effectively. After analyzing PA memory effects, a novel predistortion method based on wavelet networks (WNs) is proposed to linearize wideband RF power amplifiers. A complex wavelet network with tapped delay lines is applied to construct the predistorter and then a complex backpropagation algorithm is developed to train the predistorter parameters. The simulation results show that compared with the previously published feed-forward neural network predistortion method, the proposed method provides faster convergence rate and better performance in reducing out-of-band spectral regrowth.

  2. GaN Power Stage for Switch-mode Audio Amplification

    DEFF Research Database (Denmark)

    Ploug, Rasmus Overgaard; Knott, Arnold; Poulsen, Søren Bang

    2015-01-01

    Gallium Nitride (GaN) based power transistors are gaining more and more attention since the introduction of the enhancement mode eGaN Field Effect Transistor (FET) which makes an adaptation from Metal-Oxide Semiconductor (MOSFET) to eGaN based technology less complex than by using depletion mode Ga...

  3. Stability investigation for InP DHBT mm‐wave power amplifier

    DEFF Research Database (Denmark)

    Yan, Lei; Johansen, Tom Keinicke; Kammersgaard, Jacob

    2013-01-01

    In this article, we discuss stability issues for mm‐wave monolithic integrated power amplifiers using InP double heterojunction bipolar transistor (DHBT) technology targeting E‐band applications at 71–76 GHz and 81–86 GHz. Different stability detection methods based on the classical two‐port K‐Δs...... Periodicals, Inc. Int J RF and Microwave CAE 23: 662–674, 2013....

  4. Impact of nonlinear power amplifier on link adaptation algorithm of OFDM systems

    OpenAIRE

    Das, S. S.; Tariq, F.; Rahman, M. I.; Frederiksen, F. B.; E.D. Carvalho; Prasad, R.

    2007-01-01

    The impact of non linear distortion due to High Power Amplifier (HPA) on the performance of Link Adaptation (LA) - Orthogonal Frequency Division Multiplexing (OFDM) based wireless system is analyzed. The performance of both Forward Error Control Coding (FEC) en-coded and uncoded system is evaluated. LA maximizes the throughput while maintaining a required Block Error Rate (BLER). It is found that when OFDM signal, which has high PAPR, suffers non linear distortion due to non ideal HPA, the...

  5. External-cavity high-power dual-wavelength tapered amplifier with tunable THz frequency difference

    DEFF Research Database (Denmark)

    Chi, Mingjun; Jensen, Ole Bjarlin; Petersen, Paul Michael

    2012-01-01

    achieved with a frequency difference of 0.86 THz, the output power is higher than 1.3 W in the 5.0 THz range of frequency difference, and the amplified spontaneous emission intensity is more than 20 dB suppressed in the range of frequency difference. The beam quality factor M2 is 1.22±0.15 at an output...

  6. High power high beam quality diode-pumped 1319-nm Nd:YAG oscillator-amplifier laser system

    International Nuclear Information System (INIS)

    This paper demonstrated a high power and high beam quality diode-pumped 1319-nm Nd:YAG master oscillator-power amplifier laser system. A thermally near-unstable resonator with four-rod birefringence compensation flat-flat cavity was adopted as the master oscillator. A solid etalon was inserted in the unidirectional ring resonator to compress the laser linewidth. Under a repetition rate of 500 Hz and pulse width of 160 μs, the master oscillator delivers an average output power of 16.8 W at 1319 nm with linear polarisation, beam quality factor M2 = 1.16 and linewidth of 3.2 GHz. A double-pass power amplifier with two amplifier stages was employed for higher power scaling and the output power was amplified to be 25.9 W with M2 = 1.43. (classical areas of phenomenology)

  7. Master-oscillator power-amplifier in the red spectral range for holographic displays

    Science.gov (United States)

    Blume, G.; Pohl, J.; Feise, D.; Wiedmann, J.; Ressel, P.; Eppich, B.; Sahm, A.; Ginolas, A.; Nedow, O.; Jendrzejewski, M.; Johne, P.; Hofmann, J.; Schiemangk, M.; Sumpf, B.; Erbert, G.; Paschke, K.

    2016-03-01

    RGB-light sources with a coherence length of several meters are required for holographic displays. Furthermore, these emitters must feature a high luminance and must be sufficiently small in size, to be employed in today's consumer market products. Therefore, an all-semiconductor based solution is preferred. We developed red-emitting semiconductor lasers at 635 nm and 647 nm with internal distributed Bragg reflectors and suitable amplifiers at these wavelengths to boost the lasers output power. We investigated tapered amplifiers containing a ridge-waveguide section as well as truncated tapered designs in master-oscillator power-amplifier configuration (MOPA). This allowed the generation of diffraction limited single mode emission by the MO-chip and subsequent amplification of the radiation by the PA-chip by more than 10 dB, without significantly degrading the coherence properties. We successfully demonstrated an optical output power of more than 300 mW at 635 nm and 500 mW at 647 nm. The radiation featured a linewidth below 10 MHz, which corresponds to a coherence length of at least several meters, well suited for a holographic system.

  8. Ka-Band Wide-Bandgap Solid-State Power Amplifier: Hardware Validation

    Science.gov (United States)

    Epp, L.; Khan, P.; Silva, A.

    2005-01-01

    Motivated by recent advances in wide-bandgap (WBG) gallium nitride (GaN) semiconductor technology, there is considerable interest in developing efficient solid-state power amplifiers (SSPAs) as an alternative to the traveling-wave tube amplifier (TWTA) for space applications. This article documents proof-of-concept hardware used to validate power-combining technologies that may enable a 120-W, 40 percent power-added efficiency (PAE) SSPA. Results in previous articles [1-3] indicate that architectures based on at least three power combiner designs are likely to enable the target SSPA. Previous architecture performance analyses and estimates indicate that the proposed architectures can power combine 16 to 32 individual monolithic microwave integrated circuits (MMICs) with >80 percent combining efficiency. This combining efficiency would correspond to MMIC requirements of 5- to 10-W output power and >48 percent PAE. In order to validate the performance estimates of the three proposed architectures, measurements of proof-of-concept hardware are reported here.

  9. Performances of MMIC X-band power amplifiers obtained in foundry

    Science.gov (United States)

    Aperce, Gilles

    1990-09-01

    Two class A X band power Monolithic Microwave Integrated Circuits (MMICs) chips designed for phased array applications are described. Both have been consistently manufactured in just one foundry pass. A 10 GHz pulsed output power of 30 dBm saturated with 29 dB associated gain and 13 percent power added efficiency was achieved for the first power amplifier. The accurate small signal modeling of active and passive elements was the key to obtain these very good performances in the first design iteration. A 18 percent power added efficiency with 29 dBm output power at 1 dB compression gain and 24 dB associated gain in CW was obtained for the second amplifier. CW performance over 9 to 11 GHz was accurately predicted using a large signal Field Effect Transistor model (developed with nonlinear characterization tools) and a harmonic balance analysis. Massive DC and RF measurements were performed on the wafers. Good chips were then sorted out with the help of a database. A 58 percent DC and RF yield was obtained.

  10. An Optimized 2.4GHz RF Power Amplifier Performance for WLAN System

    International Nuclear Information System (INIS)

    Recently, the design of RF power amplifiers (PAs) for modern wireless systems are faced with a difficult tradeoff for example, cellphone; battery lifetime is largely determined by the power efficiency of the PA and high spectral efficiency which have ability to transmit data at the highest possible rate for a given channel bandwidth. This paper presents the design a multi stage class AB power Amplifier with high power added efficiency (PAE) and acceptable linearity for the WLAN applications. The open-circuited third harmonic control circuit enhances the efficiency of the PA without deteriorating the linearity of class-AB mode of the PA. The voltage and current waveforms are simulated to evaluate the appropriate operation for the modes. The effectiveness of the proposed controller has been verified by comparing proposed method with another methods using simulation study under a variety of conditions. The proposed circuit operation for a WLAN signals delivers a power-added efficiency (PAE) of 37.6% is measured at 31.6-dBm output power while dissipating 34.61 mA from a 1.8V supply. Finally, the proposed PA is show a good and acceptable result for the WLAN system.

  11. Building valve amplifiers

    CERN Document Server

    Jones, Morgan

    2013-01-01

    Building Valve Amplifiers is a unique hands-on guide for anyone working with tube audio equipment--as an electronics hobbyist, audiophile or audio engineer. This 2nd Edition builds on the success of the first with technology and technique revisions throughout and, significantly, a major new self-build project, worked through step-by-step, which puts into practice the principles and techniques introduced throughout the book. Particular attention has been paid to answering questions commonly asked by newcomers to the world of the valve, whether audio enthusiasts tackling their first build or

  12. 175-W continuous-wave master oscillator power amplifier structure ytterbium-doped all-fiber laser

    Institute of Scientific and Technical Information of China (English)

    Ping Yan; Shupeng Yin; Mali Gong

    2008-01-01

    We report on hundred watts range ytterbium-doped all-fiber laser assembly based on the master oscillator power amplifier structure. It consisted of an oscillator and an amplifier with all-fiber components. And fiber fusion splice made the laser be an integrated fiber system. It generated up to 175.5 W of continuouswave (CW) output power at 1085 nm with more than 75% extraction efficiency in the amplifier when the total coupled pump power into the double clad fiber was 270 W.

  13. High Power and Efficiency Space Traveling-Wave Tube Amplifiers With Reduced Size and Mass for NASA Missions

    Science.gov (United States)

    Simons, Rainee N.; Wilson, Jeffrey D.; Force, Dale A.

    2008-01-01

    Recent advances in high power and efficiency space traveling-wave tube amplifiers (TWTAs) for NASA s space-to-Earth communications are presented in this paper. The RF power and efficiency of a new K-Band amplifier are 40 W and 50 percent and that of a new Ka-Band amplifier are 200 W and 60 percent. An important figure-of-merit, which is defined as the ratio of the RF power output to the mass (W/kg) of a TWT has improved by a factor of ten over the previous generation Ka-Band devices.

  14. Design and analysis of a highly-integrated CMOS power amplifier for RFID readers

    Energy Technology Data Exchange (ETDEWEB)

    Gao Tongqiang [Department of Electronics, Tsinghua University, Beijing 100084 (China); Zhang Chun; Chi Baoyong; Wang Zhihua, E-mail: gtq03@mails.tsinghua.edu.c [Institute of Microelectronics, Tsinghua University, Beijing 100084 (China)

    2009-06-01

    To implement a fully-integrated on-chip CMOS power amplifier (PA) for RFID readers, the resonant frequency of each matching network is derived in detail. The highlight of the design is the adoption of a bonding wire as the output-stage inductor. Compared with the on-chip inductors in a CMOS process, the merit of the bondwire inductor is its high quality factor, leading to a higher output power and efficiency. The disadvantage of the bondwire inductor is that it is hard to control. A highly integrated class-E PA is implemented with 0.18-mum CMOS process. It can provide a maximum output power of 20 dBm and a 1 dB output power of 14.5 dBm. The maximum power-added efficiency (PAE) is 32.1%. Also, the spectral performance of the PA is analyzed for the specified RFID protocol.

  15. Design and analysis of a highly-integrated CMOS power amplifier for RFID readers

    International Nuclear Information System (INIS)

    To implement a fully-integrated on-chip CMOS power amplifier (PA) for RFID readers, the resonant frequency of each matching network is derived in detail. The highlight of the design is the adoption of a bonding wire as the output-stage inductor. Compared with the on-chip inductors in a CMOS process, the merit of the bondwire inductor is its high quality factor, leading to a higher output power and efficiency. The disadvantage of the bondwire inductor is that it is hard to control. A highly integrated class-E PA is implemented with 0.18-μm CMOS process. It can provide a maximum output power of 20 dBm and a 1 dB output power of 14.5 dBm. The maximum power-added efficiency (PAE) is 32.1%. Also, the spectral performance of the PA is analyzed for the specified RFID protocol.

  16. Efficient power allocation for fixed-gain amplify-and-forward relaying in rayleigh fading

    KAUST Repository

    Zafar, Ammar

    2013-06-01

    In this paper, we study power allocation strategies for a fixed-gain amplify-and-forward relay network employing multiple relays. We consider two optimization problems for the relay network: 1) optimal power allocation to maximize the end-to-end signal-to-noise ratio (SNR) and 2) minimizing the total consumed power while maintaining the end-to-end SNR over a threshold value. We assume that the relays have knowledge of only the channel statistics of all the links. We show that the SNR maximization problem is concave and the power minimization problem is convex. Hence, we solve the problems through convex programming. Numerical results show the benefit of allocating power optimally rather than uniformly. © 2013 IEEE.

  17. Design and analysis of a highly-integrated CMOS power amplifier for RFID readers

    Institute of Scientific and Technical Information of China (English)

    Gao Tongqiang; Zhang Chun; Chi Baoyong; Wang Zhihua

    2009-01-01

    To implement a fully-integrated on-chip CMOS power amplifier (PA) for RFID readers, the resonant frequency of each matching network is derived in detail. The highlight of the design is the adoption of a bonding wire as the output-stage inductor. Compared with the on-chip inductors in a CMOS process, the merit of the bondwire inductor is its high quality factor, leading to a higher output power and efficiency. The disadvantage of the bondwire inductor is that it is hard to control. A highly integrated class-E PA is implemented with 0.18-μm CMOS process. It can provide a maximum output power of 20 dBm and a 1 dB output power of 14.5 dBm. The maximum power-added efficiency (PAE) is 32.1%. Also, the spectral performance of the PA is analyzed for the specified RFID protocol.

  18. Experimental study of high-power Ka-band second-harmonic gyroklystron amplifier

    Energy Technology Data Exchange (ETDEWEB)

    Sokolov, E.V.; Gachev, I.G.; Zasypkin, E.V.; Antakov, I.I. [Russian Academy of Science, Nizhny Novgorod (Russian Federation). Inst. of Applied Physics

    1995-11-01

    An experimental study was carried out to test high-harmonic gyroklystron amplifier concept. A two-cavity 35-GHz second-harmonic gyroklystron with the TE{sub 021} cavity mode has been built and tested in pulse operation. Output power of 258 kW with efficiency 18% and 17-dB gain have been produced at 72 kV beam voltage and 20-A beam current. Bandwidth of about 0.3 % have been observed. The restriction of the output power, efficiency and gain was caused by the spurious oscillations excited in the second cavity in the TE{sub 011} mode at the fundamental cyclotron frequency.

  19. High power switch mode linear amplifiers for flexible ac transmission system

    Energy Technology Data Exchange (ETDEWEB)

    Mwinyiwiwa, B.; Wolanski, Z.; Ooi, B.T. [McGill Univ., Montreal, Quebec (Canada). Dept. of Electrical Engineering

    1996-10-01

    The Pulse Width Modulation (PWM) technique has been proposed for the force-commutated Shunt and Series VAR Controllers and Unified Power Flow Controllers in Flexible AC Transmission Systems. The PWM converters can be operated as linear amplifiers of constant gain so that treasure trove of linear control system theory can be brought to bear more easily when applying feedback controls. For example, pole-placement and active filtering have been successfully applied in laboratory models. This paper is written as a tutorial describing the stages of signal processing: modulation, amplification and demodulation, without reference to power electronics since the solid-state switches are modelled as ON-OFF switches.

  20. 50 Watt S-band Power Amplifier in 0.25 um GaN Technology

    OpenAIRE

    Bent, G. van der; Hek, P. de; De Graaf, M.; Vliet, F.E. van

    2014-01-01

    A 50 W S-band High Power Amplifier in the UMS GH25-10 technology is presented. In order to increase the output power per area the size of the transistors is increased beyond the maximum size modelled by the foundry. For this reason the design procedure included the measurements of a transistor and the creation of a scalable Angelov-GaN model with the use of EM simulations. An output matching design approach is adopted which intrinsically optimizes the transistor harmonic load impedance. The r...

  1. Novel low-voltage low-power Gb/s transimpedance amplifier architecture

    Science.gov (United States)

    Guckenberger, Drew; Kornegay, Kevin

    2003-04-01

    A novel current-mode transimpedance amplifier (TIA) architecture is proposed for optical receivers. This new architecture, based around the use of a uniquely biased common-base current buffer stage, allows stable, DC coupled TIAs to be designed in bipolar or CMOS processes operating from extremely low supply voltages and using very low levels of power. Noise performance is comparable to that of higher power designs that operate from higher supply rails. Simulation results have been obtained for a 47GHz fT SiGe BiCMOS process and also 0.25μm CMOS.

  2. Design procedure for millimeter-wave InP DHBT stacked power amplifiers

    DEFF Research Database (Denmark)

    Squartecchia, Michele; Johansen, Tom Keinicke; Midili, Virginio

    2015-01-01

    The stacked-transistor concept for power amplifiers (PA) has been investigated in this work. Specifically, this architecture has been applied in the design of millimeter-wave monolithic microwave integrated circuits (MMICs) using indium phosphide (InP) double heterojunction bipolar transistors...... gives 13.1 dBm of output power, 10.1 dB of gain and 13 % of PAE. To the best of the authors' knowledge, this is the first investigation of multi-level stacked PAs based on InP HBT technology....

  3. Note: Efficient generation of optical sidebands at GHz with a high-power tapered amplifier

    International Nuclear Information System (INIS)

    Two methods using a laser-diode tapered amplifier to produce high-power, high-efficiency optical frequency sidebands over a wide tunable frequency range are studied and compared. For a total output of 500 mW at 811 nm, 20% of the power can be placed in each of the first-order sidebands. Functionality and characterization are presented within the sideband frequency region of 0.8–2.3 GHz, and it is shown that both methods can be applied beyond this frequency range. These methods provide a versatile and effective tool for atomic physics experiments

  4. NASA satellite communications application research, phase 2 addendum. Efficient high power, solid state amplifier for EHF communications

    Science.gov (United States)

    Benet, James

    1994-01-01

    This document is an addendum to the NASA Satellite Communications Application Research (SCAR) Phase 2 Final Report, 'Efficient High Power, Solid State Amplifier for EHF Communications.' This report describes the work performed from 1 August 1993 to 11 March 1994, under contract number NASW-4513. During this reporting period an array of transistor amplifiers was repaired by replacing all MMIC amplifier chips. The amplifier array was then tested using three different feedhorn configurations. Descriptions, procedures, and results of this testing are presented in this report, and conclusions are drawn based on the test results obtained.

  5. A high-average power tapered FEL amplifier at submillimeter frequencies using sheet electron beams and short-period wigglers

    International Nuclear Information System (INIS)

    A high-average-power FEL amplifier operating at submillimeter frequencies is under development at the University of Maryland. Program goals are to produce a CW, ∼1 MW, FEL amplifier source at frequencies between 280 GHz and 560 GHz. To this end, a high-gain, high-efficiency, tapered FEL amplifier using a sheet electron beam and a short-period (superconducting) wiggler has been chosen. Development of this amplifier is progressing in three stages: (1) beam propagation through a long length (∼1 m) of short period (λω = 1 cm) wiggler, (2) demonstration of a proof-of-principle amplifier experiment at 98 GHz, and (3) designs of a superconducting tapered FEL amplifier meeting the ultimate design goal specifications. 17 refs., 1 fig., 1 tab

  6. Wideband LTE power amplifier with integrated novel analog pre-distorter linearizer for mobile wireless communications.

    Science.gov (United States)

    Uthirajoo, Eswaran; Ramiah, Harikrishnan; Kanesan, Jeevan; Reza, Ahmed Wasif

    2014-01-01

    For the first time, a new circuit to extend the linear operation bandwidth of a LTE (Long Term Evolution) power amplifier, while delivering a high efficiency is implemented in less than 1 mm2 chip area. The 950 µm × 900 µm monolithic microwave integrated circuit (MMIC) power amplifier (PA) is fabricated in a 2 µm InGaP/GaAs process. An on-chip analog pre-distorter (APD) is designed to improve the linearity of the PA, up to 20 MHz channel bandwidth. Intended for 1.95 GHz Band 1 LTE application, the PA satisfies adjacent channel leakage ratio (ACLR) and error vector magnitude (EVM) specifications for a wide LTE channel bandwidth of 20 MHz at a linear output power of 28 dBm with corresponding power added efficiency (PAE) of 52.3%. With a respective input and output return loss of 30 dB and 14 dB, the PA's power gain is measured to be 32.5 dB while exhibiting an unconditional stability characteristic from DC up to 5 GHz. The proposed APD technique serves to be a good solution to improve linearity of a PA without sacrificing other critical performance metrics. PMID:25033049

  7. Econophysics of adaptive power markets: When a market does not dampen fluctuations but amplifies them

    Science.gov (United States)

    Krause, Sebastian M.; Börries, Stefan; Bornholdt, Stefan

    2015-07-01

    The average economic agent is often used to model the dynamics of simple markets, based on the assumption that the dynamics of a system of many agents can be averaged over in time and space. A popular idea that is based on this seemingly intuitive notion is to dampen electric power fluctuations from fluctuating sources (as, e.g., wind or solar) via a market mechanism, namely by variable power prices that adapt demand to supply. The standard model of an average economic agent predicts that fluctuations are reduced by such an adaptive pricing mechanism. However, the underlying assumption that the actions of all agents average out on the time axis is not always true in a market of many agents. We numerically study an econophysics agent model of an adaptive power market that does not assume averaging a priori. We find that when agents are exposed to source noise via correlated price fluctuations (as adaptive pricing schemes suggest), the market may amplify those fluctuations. In particular, small price changes may translate to large load fluctuations through catastrophic consumer synchronization. As a result, an adaptive power market may cause the opposite effect than intended: Power demand fluctuations are not dampened but amplified instead.

  8. A flat gain GaN MMIC power amplifier for X band application

    International Nuclear Information System (INIS)

    A flat gain two-stage MMIC power amplifier with a 2.8 GHz bandwidth is successfully developed for X band frequency application based on a fully integrated micro-strip AlGaN/GaN HEMT technology on a semi-insulating SiC substrate. Designed with a binary-cluster matching structure integrated with RC networks and LRC networks, the developed power MMIC gets a very flat small signal gain of 15 dB with a gain ripple of 0.35 dB over 9.1–11.9 GHz at the drain bias of 20 V. These RC networks are very easy to improve the stability of used GaN HEMTs with tolerance to the MMIC technology. Inside the frequency range of 9–11.2 GHz where the measurement system calibrated, the amplifier delivers a pulsed output power of 39 dBm and an associated power added efficiency of about 20% at 28 V without saturation, as the available RF power is limited. (semiconductor integrated circuits)

  9. Amplification of high power picosecond laser pulses in multiatmosphere carbon dioxide amplifier

    International Nuclear Information System (INIS)

    High power ultrashort carbon dioxide laser pulses are useful in the study of molecular vibrations: vibrational relaxation, the exchange of vibrational energy between modes and molecules, etc. However multiatmosphere CO2 lasers are studied less than the other amplifying media. This work is devoted to a systematic theoretical investigation of picosecond pulse amplification by high pressure CO2 amplifier. The new features of this process are connected with the discrete structure of CO2 gain spectrum, phase modulation of input pulses as well as with an electron density wave which follows the powerful IR pulse in gas medium of TE CO2 amplifier. At the linear stage of amplification a short input pulse (τ 20 ps) no pulse formation takes place. A nonsteady-state theory has been developed of electron impact ionization of CO2 laser medium by intense IR picosecond pulses. The electron density wave produced by ionization process follows the laser pulse and can result in pulse envelope distortion and phase modulation. In particular it may cause pulse energy limitation and frequency chirping. The influence of phase modulation on the IR short pulse amplification has also been investigated. It is shown that the input pulse chirp may cause a considerable pulse envelope and frequency oscillatory modulation. It may be used for the generation of pulse trains of terahertz repetition rate which is useful for spectroscopic applications. (author)

  10. Python for audio signal processing

    OpenAIRE

    Glover, John C.; Lazzarini, Victor; Timoney, Joseph

    2011-01-01

    This paper discusses the use of Python for developing audio signal processing applications. Overviews of Python language, NumPy, SciPy and Matplotlib are given, which together form a powerful platform for scientic computing. We then show how SciPy was used to create two audio programming libraries, and describe ways that Python can be integrated with the SndObj library and Pure Data, two existing environments for music composition and signal processing.

  11. Isolation technique for main-amplifier system of high power solid-state laser facility

    International Nuclear Information System (INIS)

    The transmissivity and reflectivity of polarized light through Nd-glass are analyzed based on the Fresnel formula. The influence of the off-axis light in high power solid-laser facility on the isolation performance of main-amplifier system is discussed. The attitude of crystal in the small electro-optical switch is adjusted to compensate the depolarization loss due to beam rotating error, according to the mechanism that the off-axis light through the crystal of the switch will result in depolarization loss. Experimental results indicate that the system selectivity towards polarized light is not influenced by the small angle change of Nd-glass, and the isolation rate of main-amplifier system can be improved more than three times through the attitude adjustment. (authors)

  12. A highly linear fully integrated CMOS power amplifier with an analog predistortion technique

    International Nuclear Information System (INIS)

    A transformer-based CMOS power amplifier (PA) is linearized using an analog predistortion technique for a 2.5-GHz m-WiMAX transmitter. The third harmonic of the power stage and driver stage can be cancelled out in a specific power region. The two-stage PA fabricated in a standard 0.18-μm CMOS process delivers 27.5 dBm with 27% PAE at the 1-dB compression point (P1dB) and offers 21 dB gain. The PA achieves 5.5 % EVM and meets the spectrum mask at 20.5 dBm average power. Another conventional PA with a zero-cross-point of gm3 bias is also fabricated and compared to prove its good linearity and efficiency. (semiconductor devices)

  13. A highly linear fully integrated CMOS power amplifier with an analog predistortion technique

    Energy Technology Data Exchange (ETDEWEB)

    Jin Boshi; Li Lewei; Wu Qun; Yang Guohui; Zhang Kuang, E-mail: boshijin@rdamicro.com [Department of Electronic and Communications Engineering, Harbin Institute of Technology, Harbin 150001 (China)

    2011-05-15

    A transformer-based CMOS power amplifier (PA) is linearized using an analog predistortion technique for a 2.5-GHz m-WiMAX transmitter. The third harmonic of the power stage and driver stage can be cancelled out in a specific power region. The two-stage PA fabricated in a standard 0.18-{mu}m CMOS process delivers 27.5 dBm with 27% PAE at the 1-dB compression point (P{sub 1dB}) and offers 21 dB gain. The PA achieves 5.5 % EVM and meets the spectrum mask at 20.5 dBm average power. Another conventional PA with a zero-cross-point of g{sub m3} bias is also fabricated and compared to prove its good linearity and efficiency. (semiconductor devices)

  14. High-Efficiency, Ka-band Solid-State Power Amplifier Utilizing GaN Technology Project

    Data.gov (United States)

    National Aeronautics and Space Administration — QuinStar Technology proposes to develop an efficient, solid-state power amplifier (SSPA), operating at Ka-band frequencies, for high data rate, long range space...

  15. An on-chip temperature compensation circuit for an InGaP/GaAs HBT RF power amplifier

    Institute of Scientific and Technical Information of China (English)

    Li Chengzhan; Chen Zhijian; Huang Jiwei; Wang Yongping; Ma Chuanhui; Yang Hanbing; Liao Yinghao; Zhou Yong; Liu Bin

    2011-01-01

    A new on-chip temperature compensation circuit for a GaAs-based HBT RF amplifier applied to wireless communication is presented.The simple compensation circuit is composed of one GaAs HBT and five resistors with various values,which allow the power amplifier to achieve better thermal characteristics with a little degradation in performance.It effectively compensates for the temperature variation of the gain and the output power of the power amplifier by regulating the base quiescent bias current.The temperature compensation circuit is applied to a 3-stage integrated power amplifier for wireless communication applications,which results in an improvement in the gain variation from 4.0 to 1.1 dB in the temperature range between -20 and +80 ℃.

  16. Theoretical analysis of mode instability in high-power fiber amplifiers

    DEFF Research Database (Denmark)

    Hansen, Kristian Rymann; Alkeskjold, Thomas Tanggaard; Broeng, Jes; Lægsgaard, Jesper

    2013-01-01

    We present a simple theoretical model of transverse mode instability in high-power rare-earth doped fiber amplifiers. The model shows that efficient power transfer between the fundamental and higher-order modes of the fiber can be induced by a nonlinear interaction mediated through the thermo-opt...... is also shown that the presence of a small harmonic amplitude modulation of the signal can lead to generation of higher harmonics in the output intensity when operating near the instability threshold.......We present a simple theoretical model of transverse mode instability in high-power rare-earth doped fiber amplifiers. The model shows that efficient power transfer between the fundamental and higher-order modes of the fiber can be induced by a nonlinear interaction mediated through the thermo......-optic effect, leading to transverse mode instability. The temporal and spectral characteristics of the instability dynamics are investigated, and it is shown that the instability can be seeded by both quantum noise and signal intensity noise, while pure phase noise of the signal does not induce instability. It...

  17. Output Signal Power Analysis in Erbium-Doped Fiber Amplifier with Pump Power and Length Variation Using Various Pumping Techniques

    OpenAIRE

    Semmalar, S.; S. Malarkkan

    2013-01-01

    The scope of this paper is to analyze the output signal power with pump power and length variation in cascaded EDFA simulation model performance. This paper describes the simulation model of Erbium-Doped Fiber Amplifier (EDFA) of variable lengths (10 m, 50 m, and 120 m) with dual pumping techniques (dual forward pumping with two 980 nm wavelengths, dual forward and backward pumping with two 980 nm wavelengths) and Tri-pumping techniques. The simulation models consist of input source and pump ...

  18. Materials physics and device development for improved efficiency of GaN HEMT high power amplifiers.

    Energy Technology Data Exchange (ETDEWEB)

    Kurtz, Steven Ross; Follstaedt, David Martin; Wright, Alan Francis; Baca, Albert G.; Briggs, Ronald D.; Provencio, Paula Polyak; Missert, Nancy A.; Allerman, Andrew Alan; Marsh, Phil F.; Koleske, Daniel David; Lee, Stephen Roger; Shul, Randy John; Seager, Carleton Hoover; Tigges, Christopher P.

    2005-12-01

    GaN-based microwave power amplifiers have been identified as critical components in Sandia's next generation micro-Synthetic-Aperture-Radar (SAR) operating at X-band and Ku-band (10-18 GHz). To miniaturize SAR, GaN-based amplifiers are necessary to replace bulky traveling wave tubes. Specifically, for micro-SAR development, highly reliable GaN high electron mobility transistors (HEMTs), which have delivered a factor of 10 times improvement in power performance compared to GaAs, need to be developed. Despite the great promise of GaN HEMTs, problems associated with nitride materials growth currently limit gain, linearity, power-added-efficiency, reproducibility, and reliability. These material quality issues are primarily due to heteroepitaxial growth of GaN on lattice mismatched substrates. Because SiC provides the best lattice match and thermal conductivity, SiC is currently the substrate of choice for GaN-based microwave amplifiers. Obviously for GaN-based HEMTs to fully realize their tremendous promise, several challenges related to GaN heteroepitaxy on SiC must be solved. For this LDRD, we conducted a concerted effort to resolve materials issues through in-depth research on GaN/AlGaN growth on SiC. Repeatable growth processes were developed which enabled basic studies of these device layers as well as full fabrication of microwave amplifiers. Detailed studies of the GaN and AlGaN growth of SiC were conducted and techniques to measure the structural and electrical properties of the layers were developed. Problems that limit device performance were investigated, including electron traps, dislocations, the quality of semi-insulating GaN, the GaN/AlGaN interface roughness, and surface pinning of the AlGaN gate. Surface charge was reduced by developing silicon nitride passivation. Constant feedback between material properties, physical understanding, and device performance enabled rapid progress which eventually led to the successful fabrication of state of the

  19. Tunable high-power narrow-linewidth semiconductor laser based on an external-cavity tapered amplifier at 670 nm

    DEFF Research Database (Denmark)

    Chi, Mingjun; Jensen, Ole Bjarlin; Erbert, G.;

    2009-01-01

    A narrow-linewidth laser system based on a tapered semiconductor optical amplifier in external cavity is demonstrated. 800 mW output power is obtained, and the laser system is tunable from 655 to 679 nm.......A narrow-linewidth laser system based on a tapered semiconductor optical amplifier in external cavity is demonstrated. 800 mW output power is obtained, and the laser system is tunable from 655 to 679 nm....

  20. 1.38 W tunable high-power narrow-linewidth external-cavity tapered amplifier at 670 nm

    DEFF Research Database (Denmark)

    Chi, Mingjun; Erbert, G.; Sumpf, B.;

    2010-01-01

    A diffraction-limited narrow-linewidth diode laser system based on a tapered amplifier in external cavity is demonstrated. 1.38 W output power is obtained. The laser system is tunable from 659 to 675 nm.......A diffraction-limited narrow-linewidth diode laser system based on a tapered amplifier in external cavity is demonstrated. 1.38 W output power is obtained. The laser system is tunable from 659 to 675 nm....

  1. Note: Ultra-high frequency ultra-low dc power consumption HEMT amplifier for quantum measurements in millikelvin temperature range.

    Science.gov (United States)

    Korolev, A M; Shnyrkov, V I; Shulga, V M

    2011-01-01

    We have presented theory and experimentally demonstrated an efficient method for drastically reducing the power consumption of the rf/microwave amplifiers based on HEMT in unsaturated dc regime. Conceptual one-stage 10 dB-gain amplifier showed submicrowatt level of the power consumption (0.95 μW at frequency of 0.5 GHz) when cooled down to 300 mK. Proposed technique has a great potential to design the readout amplifiers for ultra-deep-cooled cryoelectronic quantum devices. PMID:21280864

  2. Design and development of RF power amplifier for SC QWR's in RIB facility at VECC

    International Nuclear Information System (INIS)

    This paper presents the design and development of a 400 W RF power amplifier at 113.5 MHz for the Super Conducting Quarter Wave Resonator (SC QWR's) in RIB facility at VECC. The RF power amplifier has been designed and developed on the balanced amplifier scheme for its known merits and it comprises of a input 3 dB quadrature hybrid (as splitter), two nos. of MRF 151G based RF power amplifier (with its preamplifier) as building blocks which are operated in push pull class AB mode and an output 3 dB high power quadrature hybrid for power combining so as to give required output power of upto 400 W. A high power circulator (500W) has been incorporated at the output for protection of RF amplifier from high RF reflected power, which is commonly expected when feeding RF power into the SC QWR's having very high loaded Q value (∼ 107 ) and high coupling factors (∼100). The input and output impedance matching in the RF power amplifiers were realized using semi rigid coaxial cables and ferrite cores. The water cooled copper heat sink for the RF power amplifier has been designed and developed to take care of the dissipated power and the max. temperature rise were well within limits. The input and output RF quadrature hybrids were realized using compact Wireline based hybrid. The power amplifier has been tested upto its full power of 400W and the test and measurement results of the power amplifier on various parameters like gain (60 dB typ), efficiency(55% typ.), input return loss (less than 18 dB), 3-dB bandwidth (greater than 5 MHz), gain variation (±1.2 dB), phase variation (0.9 deg/dB), long term power variation (less than 5W), harmonics (less than 35 dBc) etc., are presented. Also the test and measurement results of the input and output quadrature hybrids and circulator are presented in this paper. (author)

  3. Robust Power Allocation for Multi-Carrier Amplify-and-Forward Relaying Systems

    KAUST Repository

    Rao, Anlei

    2012-09-08

    It has been shown that adaptive power allocation can provide a substantial performance gain in wireless communication systems when perfect channel state information (CSI) is available at the transmitter. However when only imperfect CSI is available, the performance may degrade significantly, and as such robust power allocation schemes have been developed to minimize the effects of this degradation. In this paper, we investigate power allocation strategies for multicarrier systems, in which each subcarrier employs single amplify-and-forward (AF) relaying scheme. Optimal power allocation schemes are proposed by maximizing the approximated channel capacity under aggregate power constraint (APC) and separate power constraint (SPC). By comparison with the uniform power allocation scheme and the best channel power allocation scheme, we confirm that both the APC and SPC schemes achieve a performance gain over benchmark schemes. In addition, the impact of channel uncertainty is also considered in this paper by modeling the uncertainty regions as bounded sets, and results show that the uncertainty can degrade the worst- case performance significantly.

  4. S-band 300 W pulsed solid state microwave amplifier development for driving high power klystrons for electron accelerators

    International Nuclear Information System (INIS)

    S-Band Microwave electron accelerators like microtrons and linear accelerators need pulsed microwaves from few megawatts to tens of megawatts to accelerator the electrons to desired energy and intensity. Klystron tube based driver amplifiers were used to drive the high power klystrons, which need microwave power from few tens of watts to 1 kW depending on tube output power and gain. A endeavour was initiated at Centre for Advanced Technology to develop state of art solid state S-band microwave amplifiers indigenously to drive the klystron tubes. A modular design approach was used and individual modules up to 160 W power levels were developed and tested. Finally combining 160 W modules will give up to 300 W output power. Several more modules can be combined to achieve even high power levels. Present paper describes the developmental efforts of 300 W S-band solid-state amplifiers and related microwave technologies. (author)

  5. High Power Er/Yb Codoped Double Clad Fiber Pulsed Amplifier Based on an All-Fiber Configuration

    Institute of Scientific and Technical Information of China (English)

    ZHOU Lei; NING Ji-Ping; CHEN Cheng; HAN Qun; ZHANG Wei-Yi; WANG Jun-Tao

    2009-01-01

    We report an all-fiber two-stage high power pulsed amplifier,seeded with a 1550nm,1 kHz repetition rate rectangular pulse,and based on Er/Yb co-doped double clad fiber.All the characteristics are measured in the experiment.The maxima/slope efficiency is 22.56%,which is the highest we know of at such a low repetition rate,and the maximal output signal power is 1W.The various factors that affect the pulsed amplifier performance are analyzed.A high output power while keeping high power conversion efficiency can be obtained with careful selection of the input power,pump power and repetition rate.The experimental results show that the crucial parameters should be optimized when designing all-fiber pulsed amplifiers.

  6. High Power Er/Yb Codoped Double Clad Fiber Pulsed Amplifier Based on an All-Fiber Configuration

    International Nuclear Information System (INIS)

    We report an all-fiber two-stage high power pulsed amplifier, seeded with a 1550 nm, 1 kHz repetition rate rectangular pulse, and based on Er/Yb co-doped double clad fiber. All the characteristics are measured in the experiment. The maximal slope efficiency is 22.56%, which is the highest we know of at such a low repetition rate, and the maximal output signal power is 1W. The various factors that affect the pulsed amplifier performance are analyzed. A high output power while keeping high power conversion efficiency can be obtained with careful selection of the input power, pump power and repetition rate. The experimental results show that the crucial parameters should be optimized when designing all-fiber pulsed amplifiers. (fundamental areas of phenomenology (including applications))

  7. A fully integrated 3.5 GHz CMOS differential power amplifier driver

    International Nuclear Information System (INIS)

    A fully integrated CMOS differential power amplifier driver (PAD) is proposed for WiMAX applications. In order to fulfill the differential application requirements, a transmission line transformer is used as the output matching network. A differential inductance constitutes an inter-stage matching network. Meanwhile, an on chip balun realizes input matching as well as single-end to differential conversion. The PAD is fabricated in a 0.13 μm RFCMOS process. The chip size is 1.1 × 1.1 mm2 with all of the matching network integrated on chip. The saturated power is around 10 dBm and power gain is about 12 dB. (semiconductor integrated circuits)

  8. A fully integrated 3.5 GHz CMOS differential power amplifier driver

    Science.gov (United States)

    Xiaodong, Xu; Haigang, Yang; Tongqiang, Gao; Hongfeng, Zhang

    2013-07-01

    A fully integrated CMOS differential power amplifier driver (PAD) is proposed for WiMAX applications. In order to fulfill the differential application requirements, a transmission line transformer is used as the output matching network. A differential inductance constitutes an inter-stage matching network. Meanwhile, an on chip balun realizes input matching as well as single-end to differential conversion. The PAD is fabricated in a 0.13 μm RFCMOS process. The chip size is 1.1 × 1.1 mm2 with all of the matching network integrated on chip. The saturated power is around 10 dBm and power gain is about 12 dB.

  9. An ultra-low-power pulse oximeter implemented with an energy-efficient transimpedance amplifier.

    Science.gov (United States)

    Tavakoli, M; Turicchia, L; Sarpeshkar, R

    2010-02-01

    Pulse oximeters are ubiquitous in modern medicine to noninvasively measure the percentage of oxygenated hemoglobin in a patient's blood by comparing the transmission characteristics of red and infrared light-emitting diode light through the patient's finger with a photoreceptor. We present an analog single-chip pulse oximeter with 4.8-mW total power dissipation, which is an order of magnitude below our measurements on commercial implementations. The majority of this power reduction is due to the use of a novel logarithmic transimpedance amplifier with inherent contrast sensitivity, distributed amplification, unilateralization, and automatic loop gain control. The transimpedance amplifier, together with a photodiode current source, form a high-performance photoreceptor with characteristics similar to those found in nature, which allows LED power to be reduced. Therefore, our oximeter is well suited for portable medical applications, such as continuous home-care monitoring for elderly or chronic patients, emergency patient transport, remote soldier monitoring, and wireless medical sensing. Furthermore, our design obviates the need for an A-to-D and digital signal processor and leads to a small single-chip solution. We outline how extensions of our work could lead to submilliwatt oximeters. PMID:23853307

  10. Muscle trade-offs in a power-amplified prey capture system.

    Science.gov (United States)

    Blanco, M Mendoza; Patek, S N

    2014-05-01

    Should animals operating at great speeds and accelerations use fast or slow muscles? The answer hinges on a fundamental trade-off: muscles can be maximally fast or forceful, but not both. Direct lever systems offer a straightforward manifestation of this trade-off, yet the fastest organisms use power amplification, not direct lever action. Power-amplified systems typically use slow, forceful muscles to preload springs, which then rapidly release elastic potential energy to generate high speeds and accelerations. However, a fast response to a stimulus may necessitate fast spring-loading. Across 22 mantis shrimp species (Stomatopoda), this study examined how muscle anatomy correlates with spring mechanics and appendage type. We found that muscle force is maximized through physiological cross-sectional area, but not through sarcomere length. Sit-and-wait predators (spearers) had the shortest sarcomere lengths (fastest contractions) and the slowest strike speeds. The species that crush shells (smashers) had the fastest speeds, most forceful springs, and longest sarcomeres. The origin of the smasher clade yielded dazzlingly high accelerations, perhaps due to the release from fast spring-loading for evasive prey capture. This study offers a new window into the dynamics of force-speed trade-offs in muscles in the biomechanical, comparative evolutionary framework of power-amplified systems. PMID:24475749

  11. Optical Fiber Pumped High Repetition Rate and High Power Nd:YVO4 Picosecond Regenerative Amplifier

    OpenAIRE

    Zhen-Ao Bai; Zhong-Wei Fan; Zhen-Xu Bai; Fu-Qiang Lian; Zhi-Jun Kang; Wei-Ran Lin

    2015-01-01

    We report a stable optical fiber pumped Nd:YVO4 all solid state regenerative amplifier with all fiber picosecond laser as seed source. 888 nm Yb optical fiber lasers was chosen as pump source to reduce quantum defect for improved thermal performance. At the repetition rate of 99.6 kHz, maximum power of 19.63 W with 36 ps pulse duration were achieved when seeded by a 150 mW picosecond oscillator. The wavelength delivered was 1064.07 nm with spectral width of 0.14 nm.

  12. Optical Fiber Pumped High Repetition Rate and High Power Nd:YVO4 Picosecond Regenerative Amplifier

    Directory of Open Access Journals (Sweden)

    Zhen-Ao Bai

    2015-08-01

    Full Text Available We report a stable optical fiber pumped Nd:YVO4 all solid state regenerative amplifier with all fiber picosecond laser as seed source. 888 nm Yb optical fiber lasers was chosen as pump source to reduce quantum defect for improved thermal performance. At the repetition rate of 99.6 kHz, maximum power of 19.63 W with 36 ps pulse duration were achieved when seeded by a 150 mW picosecond oscillator. The wavelength delivered was 1064.07 nm with spectral width of 0.14 nm.

  13. High power, continuous-wave, single frequency fiber amplifier at 1091 nm and frequency doubling to 545.5 nm

    CERN Document Server

    Stappel, M; Kolbe, D; Walz, J

    2012-01-01

    We present a high power single-frequency ytterbium fiber amplifier system with an output power of 30 W at 1091 nm. The amplifier system consists of two stages, a preamplifier stage in which amplified spontaneous emission is efficiently suppressed (>40 dB) and a high power amplifier with an efficiency of 52 %. Two different approaches of frequency doubling are compared. We achieve 8.6 W at 545.5 nm by single-pass frequency doubling in a MgO-doped periodically poled stoichiometric LiTaO3 and up to 19.3 W at 545.5 nm by frequency doubling with a lithium-triborate (LBO) crystal in an external enhancement cavity.

  14. High-peak-power second-harmonic generation of single-stage Yb-doped fiber amplifiers

    Science.gov (United States)

    Horiuchi, Ryusuke; Saiki, Koichi; Adachi, Koji; Tei, Kazuyoku; Yamaguchi, Shigeru

    2008-05-01

    A high-peak-power and high-repetition-rate fiber laser architecture is successfully demonstrated using a single-stage fiber amplifier. Nonlinear optical effects in a fiber amplifier degrade the monochromaticity of amplified laser pulses. In general, it is difficult for a non-monochromatic laser pulse to realize high-order harmonic generation with bulk nonlinear optical crystals. To overcome this problem, a single-stage amplifier architecture and a gain fiber with a high cladding absorption coefficient are employed. Furthermore, single-stage amplification enables the use of a multi-longitudinal mode electro-optically (EO) Q-switched micro seed laser. This architecture can generate a peak power of 100 kW at 50 kHz and an average power of 10 W. A second-harmonic conversion efficiency of 51% is obtained using this architecture and a LiB3O5 (LBO) crystal.

  15. A Ka-Band Wide-Bandgap Solid-State Power Amplifier: Architecture Performance Estimates

    Science.gov (United States)

    Epp, L.; Khan, P.; Silva, A.

    2005-01-01

    Motivated by recent advances in wide-bandgap (WBG) gallium nitride (GaN) semiconductor technology, there is considerable interest in developing efficient solidstate power amplifiers (SSPAs) as an alternative to the traveling-wave tube amplifier (TWTA) for space applications. This article documents the results of a study to investigate power-combining technology and SSPA architectures that can enable a 120-W, 40 percent power-added efficiency (PAE) SSPA. Results of the study indicate that architectures based on at least three power combiner designs are likely to enable the target SSPA. The proposed architectures can power combine 16 to 32 individual monolithic microwave integrated circuits (MMICs) with >80 percent combining efficiency. This corresponds to MMIC requirements of 5- to 10-W output power and >48 percent PAE. For the three proposed architectures [1], detailed analysis and design of the power combiner are presented. The first architecture studied is based on a 16-way septum combiner that offers low loss and high isolation over the design band of 31 to 36 GHz. Analysis of a 2-way prototype septum combiner had an input match >25 dB, output match >30 dB, insertion loss 30 dB over the design band. A 16-way design, based on cascading this combiner in a binary fashion, is documented. The second architecture is based on a 24-way waveguide radial combiner. A prototype 24-way radial base was analyzed to have an input match >30 dB (under equal excitation of all input ports). The match of the mode transducer that forms the output of a radial combiner was found to be >27 dB. The functional bandwidth of the radial base and mode transducer, which together will form a radial combiner/divider, exceeded the design band. The third architecture employs a 32-way, parallel-plate radial combiner. Simulation results indicated an input match >24 dB, output match >22 dB, insertion loss 20 dB over the design band. All three architectures utilize a low-loss MMIC amplifier module

  16. 94 GHz power amplifier MMIC development in state of the art MHEMT and AlGaN/GaN technology

    OpenAIRE

    Heijningen , M. van; Bent, G. van der; Rodenburg, M.; Vliet, F.E. van; Quay, R.; Brückner, P.; Schwantuschke, D.; P. Jukkala; Narhi, T.

    2012-01-01

    Solid-state power amplifiers at W-band (75 - 110 GHz) are attractive for the generation of local-oscillator (LO) power for super-heterodyne receivers operating at sub-millimetre wave frequencies, as needed for example in future space instruments for Earth observation. Apart from space applications there is a growing interest for these devices in for example millimetre wave imaging, communication and radar systems. A power amplifier with an output power of the order of 1W, followed by a chain ...

  17. Power combining scheme for 50 kW pulsed solid state RF power amplifier unit at 325 MHz

    International Nuclear Information System (INIS)

    Development of 50 kW pulsed Solid State RF Power amplifier (SSPA) unit at 325 MHz is under progress at RRCAT for our Spallation Neutron Source (SNS) program. RF Power combining is mandatory requirement for SSPA, as output of solid state RF devices is moderate. As a part of this system, 16-Way radial power combiner, 16-Way radial power divider and 100 kW (pulsed RF : pulse width-2 ms, repetition rate-50 Hz) 2-Way power combiner have been successfully designed, developed and characterized at 325 MHz. 16-Way power combiner have output at 3 1/8' inch rigid coaxial line and 16 inputs at N-type connector while 16-Way Power divider has input and 16 outputs at N- type connector. 100 kW 2-Way power combiner have two inputs and output at 3 1/8 inch rigid coaxial line. It is proposed to achieve 50 kW RF output by combining 32 nos. of previously developed pulsed 1.8 kW solid state RF amplifier modules with the help of two nos. of 16-Way radial power combiners, power dividers and one no. of 100 kW 2-Way RF power combiner. Measured return loss at 325 MHz using Rohde and Schwarz make vector network analyzer for 16-Way power combiners and 16-Way power dividers were found to be better than 23 dB and 20 dB respectively. Amplitude and phase variation of 16 nos. of coupling coefficients between input and output were limited to ± 0.1 dB and ±l1° respectively for both the structures. Return loss for 100 kW pulsed RF 2-Way power combiner at 325 MHz has been measured better than 20 dB and amplitude and phase symmetry of both inputs were better than to ± 0.03 dB and ± 0.50° respectively. (author)

  18. A Low-Power 9-bit Pipelined CMOS ADC with Amplifier and Comparator Sharing Technique

    CERN Document Server

    Bocharov, Yuri; Osipov, Dmitry

    2012-01-01

    This paper describes a pipelined analog-to-digital converter (ADC) employing a power and area efficient architecture. The adjacent stages of a pipeline share operational amplifiers. In order to keep accuracy of the amplifiers in the first stages, they use a partially sharing technique. The feature of the proposed scheme is that it also shares the comparators. The capacitors of the first stages of a pipeline are scaled down along a pipeline for a further reducing the chip area and its power consumption. A 9-bit 20-MSamples/s ADC, intended for use in multi-channel mixed-signal chips, has been fabricated via Europractice in a 180-nm CMOS process from UMC. The prototype ADC shows a spurious-free dynamic range of 58.5 dB at a sample rate of 20 MSamples/s, when a 400 kHz input signal with a swing of 1 dB below full scale is applied. The effective number of bits is 8.0 at the same conditions. ADC occupies an active area of 0.4 mm2 and dissipates 8.6 mW at a 1.8 V supply.

  19. High efficiency fourth-harmonic generation from nanosecond fiber master oscillator power amplifier

    Science.gov (United States)

    Mu, Xiaodong; Steinvurzel, Paul; Rose, Todd S.; Lotshaw, William T.; Beck, Steven M.; Clemmons, James H.

    2016-03-01

    We demonstrate high power, deep ultraviolet (DUV) conversion to 266 nm through frequency quadrupling of a nanosecond pulse width 1064 nm fiber master oscillator power amplifier (MOPA). The MOPA system uses an Yb-doped double-clad polarization-maintaining large mode area tapered fiber as the final gain stage to generate 0.5-mJ, 10 W, 1.7- ns single mode pulses at a repetition rate of 20 kHz with measured spectral bandwidth of 10.6 GHz (40 pm), and beam qualities of Mx 2=1.07 and My 2=1.03, respectively. Using LBO and BBO crystals for the second-harmonic generation (SHG) and fourth-harmonic generation (FHG), we have achieved 375 μJ (7.5 W) and 92.5 μJ (1.85 W) at wavelengths of 532 nm and 266 nm, respectively. To the best of our knowledge these are the highest narrowband infrared, green and UV pulse energies obtained to date from a fully spliced fiber amplifier. We also demonstrate high efficiency SHG and FHG with walk-off compensated (WOC) crystal pairs and tightly focused pump beam. An SHG efficiency of 75%, FHG efficiency of 47%, and an overall efficiency of 35% from 1064 nm to 266 nm are obtained.

  20. Design, development and characterization studies of a large aperture high power Nd : glass rod amplifier stage

    International Nuclear Information System (INIS)

    Laser-plasma interaction studies and experiments related to laser driven shocks as well as laser induced inertially confined thermonuclear fusion have resulted in an ever increasing demand for high brightness lasers capable of producing nanosecond pulse with energy of hundreds of kilo joules. High power Nd-glass laser chains with a master oscillator followed by a number of amplifier stages made up of rods, disks, slabs etc. are in operation in many leading laboratories in the world. This report describes the design, development and characterisation studies of a large aperture Nd:glass laser amplifier which is to be incorporated on line with the existing 40 J, 5 ns high power laser chain built for laser-plasma interaction and laser driven shock wave studies in the Laser and Plasma Technology Division. The development work described in this report discusses the design based on optimum material selection, optimisation of various sub components, ease of maintenance and smooth operation. The necessary operational electronics has also been described. The characterization studies mainly include measurement of spatial gain uniformity, thermally induced depolarization effects, and thermal relaxation studies. (author). 37 refs., 14 figs., 5 tabs

  1. A novel low-voltage operational amplifier for low-power pipelined ADCs

    International Nuclear Information System (INIS)

    A novel low-voltage two-stage operational amplifier employing class-AB architecture is presented. The structure utilizes level-shifters and current mirrors to create the class-AB behavior in the first and second stages. With this structure, the transconductances of the two stages are double compared with the normal configuration without class-AB behaviors with the same current consumption. Thus power can be saved and the operation frequency can be increased. The nested cascode miller compensation and symmetric common-mode feedback circuits are used for large unit-gain bandwidth, good phase margin and stability. Simulation results show that the sample-and-hold of the 12-bit 40-Ms/s pipelined ADC using the proposed amplifier consumes only 5.8 mW from 1.2 V power supply with signal-to-noise-and-distortion ratio 89.5 dB, spurious-free dynamic range 95.7 dB and total harmonic distortion -94.3 dB with Nyquist input signal frequency.

  2. A low-power CMOS trans-impedance amplifier for FM/cw ladar imaging system

    Science.gov (United States)

    Hu, Kai; Zhao, Yi-qiang; Sheng, Yun; Zhao, Hong-liang; Yu, Hai-xia

    2013-09-01

    A scannerless ladar imaging system based on a unique frequency modulation/continuous wave (FM/cw) technique is able to entirely capture the target environment, using a focal plane array to construct a 3D picture of the target. This paper presents a low power trans-impedance amplifier (TIA) designed and implemented by 0.18 μm CMOS technology, which is used in the FM/cw imaging ladar with a 64×64 metal-semiconductor-metal(MSM) self-mixing detector array. The input stage of the operational amplifier (op amp) in TIA is realized with folded cascade structure to achieve large open loop gain and low offset. The simulation and test results of TIA with MSM detectors indicate that the single-end trans-impedance gain is beyond 100 kΩ, and the -3 dB bandwidth of Op Amp is beyond 60 MHz. The input common mode voltage ranges from 0.2 V to 1.5 V, and the power dissipation is reduced to 1.8 mW with a supply voltage of 3.3 V. The performance test results show that the TIA is a candidate for preamplifier of the read-out integrated circuit (ROIC) in the FM/cw scannerless ladar imaging system.

  3. Theoretical and experimental analysis of high-power frequency-stabilized semiconductor master oscillator power-amplifier system.

    Science.gov (United States)

    Ji, Encai; Liu, Qiang; Nie, Mingming; Fu, Xing; Gong, Mali

    2016-04-10

    We present a compact high-power 780 nm frequency-stabilized diode laser with a power of as high as 2.825 W, corresponding to an estimated overall efficiency of 38.5%. The tapered amplifier (TPA) gain was about 24.5 dB, which was basically consistent with the simulation results. The beam quality factor was M2semiconductor TPA system with the matured saturated absorption spectrum technique. The laser frequency was stabilized against mode hops for a period of >4200  s with a frequency fluctuation around 6.7×10-10 within 1 s of the observation period, and the linewidth was no more than 0.95 MHz. The laser performance indicates that the current frequency-stabilized semiconductor laser has great potential in certain conditions that require several watts of output power. PMID:27139853

  4. The analysis of the performance of multi-beamforming in memory nonlinear power amplifier

    Science.gov (United States)

    Li, Huiyong; Li, Xun; Wei, Chen

    2014-12-01

    With the increasingly diverse and complex requirements of radar systems and communication systems, the application of multifunction-phased array radar has become a trend, and the digital multi-beamforming technology plays a crucial role in it. In practice, power amplifier (PA) is an essential component in radar systems and communication systems. Unfortunately, it is always nonlinear to provide a high output power. With the purpose of a high output power and efficiency, it is necessary to study the influence of PA nonlinear characteristics on the digital multi-beamforming. In this paper, a form of the multi-beamforming signal and a nonlinear model with memory for PA are given. The output signal via the PA model has been analyzed subsequently. As the result of analysis, it can be found that the output signal is divided into the original signal and the interferential signal. The power ratio of original signal to interference signal can reflect the influence of PA nonlinear characteristics on the digital multi-beamforming. Finally, according to the ratio, the results of computer simulation show that the memory effect plays a key role for the small power signal, while the nonlinearity plays an important role for the large power signal.

  5. Modeling Nonlinear Power Amplifiers in OFDM Systems from Subsampled Data: A Comparative Study Using Real Measurements

    Directory of Open Access Journals (Sweden)

    Santamaría Ignacio

    2003-01-01

    Full Text Available A comparative study among several nonlinear high-power amplifier (HPA models using real measurements is carried out. The analysis is focused on specific models for wideband OFDM signals, which are known to be very sensitive to nonlinear distortion. Moreover, unlike conventional techniques, which typically use a single-tone test signal and power measurements, in this study the models are fitted using subsampled time-domain data. The in-band and out-of-band (spectral regrowth performances of the following models are evaluated and compared: Saleh's model, envelope polynomial model (EPM, Volterra model, the multilayer perceptron (MLP model, and the smoothed piecewise-linear (SPWL model. The study shows that the SPWL model provides the best in-band characterization of the HPA. On the other hand, the Volterra model provides a good trade-off between model complexity (number of parameters and performance.

  6. Spatial Filter with Volume Gratings for High-peak-power Multistage Laser Amplifiers

    CERN Document Server

    Tan, Yi-zhou; Zheng, Guang-wei; Shen, Ben-jian; Pan, Heng-yue; Li, Liu

    2012-01-01

    The regular spatial filters comprised of lens and pinhole are essential component in high power laser systems, such as lasers for inertial confinement fusion, nonlinear optical technology and directed-energy weapon. On the other hand the pinhole is treated as a bottleneck of high power laser due to harmful plasma created by the focusing beam. In this paper we present a spatial filter based on angular selectivity of Bragg diffraction grating to avoid the harmful focusing effect in the traditional pinhole filter. A spatial filter consisted of volume phase gratings in two-pass amplifier cavity were reported. Two-dimensional filter was proposed by using single Pi-phase-shifted Bragg grating, numerical simulation results shown that its angular spectrum bandwidth can be less than 160urad. The angular selectivity of photo-thermo-refractive glass and RUGATE film filters, construction stability, thermal stability and the effects of misalignments of gratings on the diffraction efficiencies under high-pulse-energy laser...

  7. An Integrated Low-Power Lock-In Amplifier and Its Application to Gas Detection

    Directory of Open Access Journals (Sweden)

    Paulina M. Maya-Hernández

    2014-08-01

    Full Text Available This paper presents a new micropower analog lock-in amplifier (LIA suitable for battery-operated applications thanks to its reduced size and power consumption as well as its operation with single-supply voltage. The proposed LIA was designed in a 0.18 µm CMOS process with a single supply voltage of 1.8 V. Experimental results show a variable DC gain ranging from 24.7 to 42 dB, power consumption of 417 µW and integration area of 0.013 mm2. The LIA performance was demonstrated by measuring carbon monoxide concentrations as low as 1 ppm in dry N2. The experimental results show that the response to CO of the sensing system can be considerably improved by means of the proposed LIA.

  8. An integrated low-power lock-in amplifier and its application to gas detection.

    Science.gov (United States)

    Maya-Hernández, Paulina M; Álvarez-Simón, Luis C; Sanz-Pascual, María Teresa; Calvo-López, Belén

    2014-01-01

    This paper presents a new micropower analog lock-in amplifier (LIA) suitable for battery-operated applications thanks to its reduced size and power consumption as well as its operation with single-supply voltage. The proposed LIA was designed in a 0.18 µm CMOS process with a single supply voltage of 1.8 V. Experimental results show a variable DC gain ranging from 24.7 to 42 dB, power consumption of 417 µW and integration area of 0.013 mm2. The LIA performance was demonstrated by measuring carbon monoxide concentrations as low as 1 ppm in dry N2. The experimental results show that the response to CO of the sensing system can be considerably improved by means of the proposed LIA. PMID:25166501

  9. Study of dopant concentrations on thermally induced mode instability in high-power fiber amplifiers

    Science.gov (United States)

    Tao, Rumao; Ma, Pengfei; Wang, Xiaolin; Zhou, Pu; Liu, Zejin

    2016-06-01

    The dependence of mode instabilities (MIs) on ytterbium dopant concentrations in high-power fiber amplifiers has been investigated. It is theoretically shown that, by only varying the fiber length to maintain the same total small-signal pump absorption, the MI threshold is independent of dopant concentration. MI thresholds of gain fibers with ytterbium dopant concentrations of 5.93  ×  1025 m‑3 and 1.02  ×  1026 m‑3 have been measured which exhibit similar MI thresholds and agree with the theoretical results. The result indicates that heavy doping of active fiber can be adopted to suppress nonlinear effects without decreasing the MI threshold. This provides a method of maximizing the power output of fiber laser, taking into account the stimulated Brillouin scattering, stimulated Raman Scattering, and MI thresholds simultaneously.

  10. Study of dopant concentrations on thermal induced mode instability in high power fiber amplifiers

    CERN Document Server

    Tao, Rumao; Wang, Xiaolin; Zhou, Pu; Liu, Zejin

    2015-01-01

    Dependence of mode instabilities (MI) on ytterbium dopant concentrations in high power fiber amplifiers has been investigated. It is theoretically shown that, by only varying the fiber length to maintain the same total small-signal pump absorption, the MI threshold is independent of dopant concentration. MI thresholds of gain fibers with ytterbium dopant concentration of 5.93X10^25/m3 and 1.02X10^26/m3 have been measured, which exhibit similar thresholds and agree with theoretical results. The result indicates that heavy doping of active fiber can be adopted to suppress nonlinear effects without decreasing MI threshold, which provides a method of maximizing the power output of fiber laser, taking into account the stimulated Brillouin scattering, stimulated Raman Scattering, and MI thresholds simultaneously.

  11. 11 mJ all-fiber-based actively Q-switched fiber master oscillator power amplifier

    International Nuclear Information System (INIS)

    We report a high energy all fiber format nanosecond pulsed laser source at ∼1064 nm in master oscillator power amplifier (MOPA) configuration. The seed source is an acousto-optic Q-switched fiber laser with a varied pulse duration and repetition rate. The output average power of the oscillator is ∼30 mW and two pre-amplifiers were developed to boost the average power to ∼3 W. Pulse energy of >11 mJ for ∼660 ns pulses at 3 kHz was achieved in the final power amplifier using a commercial 50/400 μm (core/cladding diameter) double cladding Yb-doped fiber (DCYF). (letter)

  12. Joint subchannel pairing and power control for cognitive radio networks with amplify-and-forward relaying.

    Science.gov (United States)

    Shen, Yanyan; Wang, Shuqiang; Wei, Zhiming

    2014-01-01

    Dynamic spectrum sharing has drawn intensive attention in cognitive radio networks. The secondary users are allowed to use the available spectrum to transmit data if the interference to the primary users is maintained at a low level. Cooperative transmission for secondary users can reduce the transmission power and thus improve the performance further. We study the joint subchannel pairing and power allocation problem in relay-based cognitive radio networks. The objective is to maximize the sum rate of the secondary user that is helped by an amplify-and-forward relay. The individual power constraints at the source and the relay, the subchannel pairing constraints, and the interference power constraints are considered. The problem under consideration is formulated as a mixed integer programming problem. By the dual decomposition method, a joint optimal subchannel pairing and power allocation algorithm is proposed. To reduce the computational complexity, two suboptimal algorithms are developed. Simulations have been conducted to verify the performance of the proposed algorithms in terms of sum rate and average running time under different conditions. PMID:25045731

  13. RF power upgrade at the superconducting 1.3 GHz CW LINAC "ELBE" with solid state amplifiers

    Science.gov (United States)

    Büttig, Hartmut; Arnold, A.; Büchner, A.; Justus, M.; Kuntsch, M.; Lehnert, U.; Michel, P.; Schurig, R.; Staats, G.; Teichert, J.

    2013-03-01

    The RF power for the superconducting 1.3 GHz CW LINAC "ELBE" has been doubled from less than 10 kW to 20 kW per cavity. In January 2012 the four 10 kW klystrons used to drive the four superconducting cavities of the LINAC have been replaced by pairs of 10 kW solid state power amplifiers (SSPA). ELBE is now worldwide the first 1.3 GHz CW LINAC equipped with solid state RF power amplifiers. This technical note details on this project.

  14. Optimized Envelope Tracking Power Supply for Tetra2 Base Station RF Power Amplifier

    DEFF Research Database (Denmark)

    Høyerby, Mikkel Christian Wendelboe; Andersen, Michael Andreas E.

    An ultra-fast tracking power supply (UFTPS) for envelope tracking in a 50kHz 64-QAM Tetra2 base station power amplification system is demonstrated. A simple method for optimizing the step response of the PID+PD sliding-mode control system is presented and demonstrated, along with a PLL-based scheme...

  15. High power rf amplifiers for accelerator applications: The large orbit gyrotron and the high current, space charge enhanced relativistic klystron

    Energy Technology Data Exchange (ETDEWEB)

    Stringfield, R.M.; Fazio, M.V.; Rickel, D.G.; Kwan, T.J.T.; Peratt, A.L.; Kinross-Wright, J.; Van Haaften, F.W.; Hoeberling, R.F.; Faehl, R.; Carlsten, B.; Destler, W.W.; Warner, L.B.

    1990-01-01

    Los Alamos is investigating a number of high power microwave sources for their potential to power advanced accelerators. Included in this investigation are the large orbit gyrotron amplifier and oscillator (LOG) and the relativistic klystron amplifier (RKA). LOG amplifier development is newly underway. Electron beam power levels of 3 GW, 70 ns duration, are planned, with anticipated conversion efficiencies into RF on the order of 20 percent. Ongoing investigations on this device include experimental improvement of the electron beam optics, and computational studies of resonator design and RF extraction. Recent RKA studies have operated at electron beam powers into the device of 1.35 GW in microsecond duration pulses. The device has yielded modulated electron beam power approaching 300 MW using 3--5 kW of RF input drive. RF powers extracted into waveguide have been up to 70 MW, suggesting that more power is available from the device that we have converted to-date in the extractor. We have examined several aspects of operation, including beam bunching phenomena and RF power extraction techniques. In addition, investigations of the amplifier gain as a function of input drive, electron beam parameters and axial magnetic field strength also have been explored. The effect of ions formed during device operation also has been considered.

  16. 50 Watt S-band power amplifier in 0.25 μm GaN technology

    NARCIS (Netherlands)

    Bent, G. van der; Hek, A.P. de; Graaf, M. van der; Vliet, F.E. van

    2014-01-01

    A 50 W S-band High Power Amplifier in the UMS GH25-10 technology is presented. In order to increase the output power per area the size of the transistors is increased beyond the maximum size modelled by the foundry. For this reason the design procedure included the measurements of a transistor and t

  17. Intelligent audio analysis

    CERN Document Server

    Schuller, Björn W

    2013-01-01

    This book provides the reader with the knowledge necessary for comprehension of the field of Intelligent Audio Analysis. It firstly introduces standard methods and discusses the typical Intelligent Audio Analysis chain going from audio data to audio features to audio recognition.  Further, an introduction to audio source separation, and enhancement and robustness are given. After the introductory parts, the book shows several applications for the three types of audio: speech, music, and general sound. Each task is shortly introduced, followed by a description of the specific data and methods applied, experiments and results, and a conclusion for this specific task. The books provides benchmark results and standardized test-beds for a broader range of audio analysis tasks. The main focus thereby lies on the parallel advancement of realism in audio analysis, as too often today’s results are overly optimistic owing to idealized testing conditions, and it serves to stimulate synergies arising from transfer of ...

  18. Quantum cascade laser in a master oscillator power amplifier configuration with Watt-level optical output power.

    Science.gov (United States)

    Hinkov, Borislav; Beck, Mattias; Gini, Emilio; Faist, Jérôme

    2013-08-12

    We present the design and realization of short-wavelength (λ = 4.53 μm) and buried-heterostructure quantum cascade lasers in a master oscillator power amplifier configuration. Watt-level, singlemode peak optical output power is demonstrated for typical non-tapered 4 μm wide and 5.25 mm long devices. Farfield measurements prove a symmetric, single transverse-mode emission in TM(00)-mode with typical divergences of 25° and 27° in and perpendicular to growth direction, respectively. We demonstrate singlemode tuning over a range of 7.9 cm(-1) for temperatures between 263K and 313K and also singlemode emission for different driving currents. The side mode suppression ratio is measured to be higher than 20 dB. PMID:23938833

  19. Nano watt power rail-to-rail CMOS amplifier with adaptive biasing circuits for ultralow-power analog LSIs

    Science.gov (United States)

    Ozaki, Toshihiro; Hirose, Tetsuya; Tsubaki, Keishi; Kuroki, Nobutaka; Numa, Masahiro

    2015-04-01

    In this paper, we present a rail-to-rail folded-cascode amplifier (AMP) with adaptive biasing circuits (ABCs). The circuit uses a nano ampere current reference circuit to achieve ultralow-power and ABCs to achieve high-speed operation. The ABCs are based on conventional circuits and modified to be suitable for rail-to-rail operation. The measurement results demonstrated that the AMP with the proposed ABCs can operate with an ultralow-power of 384 nA when the input voltage was 0.9 V and achieve high speeds of 0.162 V/µs at the rise time and 0.233 V/µs at the fall time when the input pulse frequency and the amplitude were 10 kHz and 1.5 Vpp, respectively.

  20. A 900 MHz, 21 dBm CMOS linear power amplifier with 35% PAE for RFID readers

    Energy Technology Data Exchange (ETDEWEB)

    Han Kefeng; Cao Shengguo; Tan Xi; Yan Na; Wang Junyu; Tang Zhangwen; Min Hao, E-mail: tanxi@fudan.edu.cn [State Key Laboratory of ASIC and System, Fudan University, Shanghai 201203 (China)

    2010-12-15

    A two-stage differential linear power amplifier (PA) fabricated by 0.18 {mu}m CMOS technology is presented. An output matching and harmonic termination network is exploited to enhance the output power, efficiency and harmonic performance. Measurements show that the designed PA reaches a saturated power of 21.1 dBm and the peak power added efficiency (PAE) is 35.4%, the power gain is 23.3 dB from a power supply of 1.8 V and the harmonics are well controlled. The total area with ESD protected PAD is 1.2 x 0.55 mm{sup 2}. System measurements also show that this power amplifier meets the design specifications and can be applied for RFID reader. (semiconductor integrated circuits)

  1. A 900 MHz, 21 dBm CMOS linear power amplifier with 35% PAE for RFID readers

    International Nuclear Information System (INIS)

    A two-stage differential linear power amplifier (PA) fabricated by 0.18 μm CMOS technology is presented. An output matching and harmonic termination network is exploited to enhance the output power, efficiency and harmonic performance. Measurements show that the designed PA reaches a saturated power of 21.1 dBm and the peak power added efficiency (PAE) is 35.4%, the power gain is 23.3 dB from a power supply of 1.8 V and the harmonics are well controlled. The total area with ESD protected PAD is 1.2 x 0.55 mm2. System measurements also show that this power amplifier meets the design specifications and can be applied for RFID reader. (semiconductor integrated circuits)

  2. Instant audio processing with Web Audio

    CERN Document Server

    Khoo, Chris

    2013-01-01

    Filled with practical, step-by-step instructions and clear explanations for the most important and useful tasks. A concise, recipe-based approach to use Web Audio's automation functionality to produce interesting audio effects such as audio stitching and ducking.This book is designed for developers with some HTML and JavaScript programming experience who are seeking to learn about Web Audio. Experience with AJAX and web server installation/configuration is a plus but is not a necessity in order to follow the content of the book.

  3. Low Power Broadband Low-Noise Amplifiers from 1-300GHz Project

    Data.gov (United States)

    National Aeronautics and Space Administration — A number of low noise amplifier technologies exist at a variety of maturity levels and with a variety of strengths and limitations. The most mature amplifier...

  4. A Ku band internally matched high power GaN HEMT amplifier with over 30%of PAE

    Institute of Scientific and Technical Information of China (English)

    Ge Qin; Chen Xiaoiuan; Luo Weijun; Yuan Tingting; Pu Yan; Liu Xinyu

    2012-01-01

    We report a high power Ku band internally matched power amplifier (IMPA) with high power added efficiency (PAE) using 0.3 μm AlGaN/GaN high electron mobility transistors (HEMTs) on 6H-SiC substrate.The internal matching circuit is designed to achieve high power output for the developed devices with a gate width of 4 mm.To improve the bandwidth of the amplifier,a T type pre-matching network is used at the input and output circuits,respectively.After optimization by a three-dimensional electromagnetic (3D-EM) simulator,the amplifier demonstrates a maximum output power of 42.5 dBm (17.8 W),PAE of 30% to 36.4% and linear gain of 7 to 9.3 dB over 13.8-14.3 GHz under a 10% duty cycle pulse condition when operated at Vds =30 V and Vgs =-4 V.At such a power level and PAE,the amplifier exhibits a power density of 4.45 W/mm.

  5. Development of a 20-W solid-state S-band power amplifier

    Science.gov (United States)

    Vandercapellen, A. G.

    1972-01-01

    As an alternative to the use of traveling wave tube amplifiers in spacecraft with long life mission requirements, a solid state S band amplifier was developed. A solid state amplifier with an output of 20 W at 2295 MHz, a dc/RF efficiency of 38%, and a gain of 27 dB was developed. The physical and electrical performance of the solid state amplifier are described.

  6. Thermal considerations in the use of solid state power amplifiers on the GOES spacecraft

    Science.gov (United States)

    Mallette, L.; Darby, S.; Baatz, M.; Ujihara, K.

    1984-01-01

    The use of solid state power amplifiers (SSPA) in satellites has been quite prevalent in several frequency bands. This trend is evidenced by the use of SSPAs at Hughes in the UHF band (Leasat/Syncom IV), S band (GOES), C band (Telstar), and SHF band. The junction temperature of the transistor is the driving requirement which determines the lifetime of the transistor, SSPA, and the payload. This temperature is determined by the transistor characteristics, use of the device, and mounting temperature of the SSPA. The temperature of the spacecraft in the area of the SSPA can be controlled by active or passive means. The various factors and interrelationships used to calculate and control the temperatures of SSPAs are described. The thermal design and calculation of junction temperatures are exemplified with the Geostationary Operational Environmental Satellite spacecraft.

  7. Design of a single-stage depressed collector for high-power, pulsed gyroklystron amplifiers

    Energy Technology Data Exchange (ETDEWEB)

    Saraph, G.P.; Granatstein, V.L.; Lawson, W. [Univ. of Maryland, College Park, MD (United States). Inst. for Plasma Research

    1998-04-01

    Net efficiency of microwave devices can be enhanced by recovering energy from the spent electron beam. Depressed collectors are commonly used for low to medium voltage (<100 kV), CW microwave tubes to achieve this objective. Designs of single-stage depressed collectors for high-power, high-voltage, pulsed gyroklystron amplifiers are presented here. Theoretical velocity distributions of the spent beams from 17.14 and 35.0 GHz relativistic gyroklystron designs are used as input to the particle trajectory simulations. The entire spent beam is collected at the cylindrical collector held at a depressed potential with respect to the interaction cavities. The magnetic field profile is adjusted to achieve collection of electrons at the maximum depressed value of the collector potential. A significant improvement in the device efficiency is estimated for both designs. A possible implementation scheme for the energy recovery using a double anode electron gun is described in detail.

  8. Design of a single-stage depressed collector for high-power, pulsed gyroklystron amplifiers

    International Nuclear Information System (INIS)

    Net efficiency of microwave devices can be enhanced by recovering energy from the spent electron beam. Depressed collectors are commonly used for low to medium voltage (<100 kV), CW microwave tubes to achieve this objective. Designs of single-stage depressed collectors for high-power, high-voltage, pulsed gyroklystron amplifiers are presented here. Theoretical velocity distributions of the spent beams from 17.14 and 35.0 GHz relativistic gyroklystron designs are used as input to the particle trajectory simulations. The entire spent beam is collected at the cylindrical collector held at a depressed potential with respect to the interaction cavities. The magnetic field profile is adjusted to achieve collection of electrons at the maximum depressed value of the collector potential. A significant improvement in the device efficiency is estimated for both designs. A possible implementation scheme for the energy recovery using a double anode electron gun is described in detail

  9. Volterra series based predistortion for broadband RF power amplifiers with memory effects

    Institute of Scientific and Technical Information of China (English)

    Jin Zhe; Song Zhihuan; He Jiaming

    2008-01-01

    RF power amplifiers(PAs)are usually considered as memoryless devices in most existing predistortion techniques.However,in broadband communication systems,such as WCDMA,the PA memory effects are significant,and memoryless predistortion cannot linearize the PAs effectively.After analyzing the PA memory effects,a novel predistortion method based on the simplified Volterra series is proposed to linearize broadband RF PAs with memory effects.The indirect learning architecture is adopted to design the predistortion scheme and the recursive least squares algorithm with forgetting factor is applied to identify the parameters of the predistorter.Simulation results show that the proposed predistortion method can compensate the nonlinear distortion and memory effects of broadband RF PAs effectively.

  10. Modeling and Predistortion of Envelope Tracking Power Amplifiers using a Memory Binomial Model

    DEFF Research Database (Denmark)

    Tafuri, Felice Francesco; Sira, Daniel; Larsen, Torben

    2013-01-01

    Nowadays envelope tracking (ET) is considered one of the most appealing techniques for the efficiency enhancement of RF power amplifiers (PAs), but it also introduces a number of additional challenges for the system simulation and implementation. In this context, this paper aims to provide a new...... behavioral model capable of an improved performance when used for the modeling and predistortion of RF PAs deployed in ET transceivers. The proposed solution consists in a 2D behavioral model having as a dual-input the PA complex baseband envelope and the modulated supply waveform, peculiar of the ET case....... The model definition is based on binomial series, hence the name of memory binomial model (MBM). The MBM is here applied to measured data-sets acquired from an ET measurement set-up. When used as a PA model the MBM showed an NMSE (Normalized Mean Squared Error) as low as −40dB and an ACEPR (Adjacent...

  11. Study on Volterra-Laguerre behavioral model for RF power amplifier

    Institute of Scientific and Technical Information of China (English)

    Nan Jingchang; Liu Yuanan; Tang Bihua

    2007-01-01

    Volterra series behavioral model for radio frequency(RF)power amplifier(PA)has been widely used in system-level simulation,however,high computational complexity makes this kind of model limited to"weak"nonlinearity.In order to reduce the computational complexity and the number of coefficients of Volterra series kernels,a Volterra series improved behavioral model based on Lasuerre orthogonal polynomials function,namely Volterra-Laguerre behavioral model,is proposed.Mathematical expressions of Volterra-Laguerre behavioral model is derived.and accuracy of the model is verified through comparison of measured and simulation output data from a freescale PA using MRF21030 transistor.Mathematical analysis and simulation results show that Volterra-Laguerre behavioral model has a simple structure,much less coefficients and better modeling performance than general Volterra series model.The model can be used more correctly for system-level simulation of RF PA with wideband signal.

  12. Electronically Tunable Impedance-Matching Networks for Intelligent RF Power Amplifiers

    Directory of Open Access Journals (Sweden)

    Liang Li

    2013-11-01

    Full Text Available This paper presents the simulation and optimization design of the electronically tunable impedance-matching networks for intelligent RF power amplifiers in a cognitive radio system. Reconfigurable elements, such as varactors and RF switches are utilized to achieve the dynamic impedance matching both in the input and output matching circuit, providing coarse and fine tuning of the target impedances with low loss and excellent impedance coverage from 500MHz to 800MHz. The topology of varactor model is illustrated to ensure the precision of simulation. In addition, high-precision bias voltage controlling system is designed to improve the nonlinear problem caused by the varactor. The simulation results demonstrate the excellent performance of the tunable networks, satisfying the requirement of the cognitive radio systems.  

  13. Double optimization of Xe(L) amplifier power scaling at λ ∼ 2.9 A

    International Nuclear Information System (INIS)

    The spectral and spatial characteristics of the Xe(L) amplifier at λ ∼ 2.9 A determine an optimum for the scaling of the peak power with channel length. The Xe31+ and Xe32+ (3d → 2p) transition arrays represent two identical spectral optima for amplification, a property stemming from the extremum of spectral components (3245) characteristic of their electron configurations. Adroit matching of the spatial distribution of the intensity characteristic of the propagating 248 nm pulse dynamically generating the self-trapped plasma channel with the intensity required to excite selectively and efficiently the Xe31+ and Xe32+ arrays can also simultaneously maximize the spatial volume of the excitation. The net outcome of this double maximization is an amplifying channel for the optimal transitions that possesses high gain (∼100 cm-1), low losses (-1cm-1) and a diameter of 15-20 μm, a size sufficient to produce an x-ray pulse energy of ∼50-100 mJ from a channel having an average xenon density of ∼1020 cm-3 and a length of 1 cm. Since previous studies have experimentally demonstrated the ability to produce a saturated bandwidth of ∼60 eV, a magnitude sufficient to support a pulse duration of ∼30 as, peak powers Px >> 1 PW are clearly within the scaling limits of the Xe(L) system. The corresponding peak brightness scaling limit is accordingly bounded from below by Px/λ2 ≅ 1030 W cm-2 sr-1. (fast track communication)

  14. High-power master-oscillator power amplifiers based on rare-earth-doped fibres

    OpenAIRE

    Jeong, Y.; Nilsson, J; Dupriez, P.; Codemard, C.; Farrell, C.; Sahu, J. K.; Kim, J; Yoo, S.; Richardson, D.J.; Payne, D. N.

    2006-01-01

    In recent years there have been dramatic advances in fibre lasers. Currently, conventional single-strand cladding-pumped fibre lasers can generate output powers beyond 1 kW with high beam quality. Indeed, this fibre circuitry combined with pump-diode technology provides a unique high-gain environment for robust designs, which is also all-solid state, compact, stable, reliable, and reproducible. Here we review the recent progress in high-power MOPAs based on rare-earth-doped fibres and discuss...

  15. Progress in high-power single frequency master oscillator power amplifier

    OpenAIRE

    Maran, Jean-Noel; Jeong, Yoonchan; Yoo, Seongwoo; Sahu, Jayanta; Nilsson, Johan

    2008-01-01

    In the recent years some tremendous progresses have been made to scale up the output power of fiber laser to the point where fiber laser technology is becoming a serious competitor to the solid-state lasers in most of the industrial applications. Nowadays single mode Ytterbium (Yb) doped fiber lasers with an output power of 2kW[1] are commercially available and some 5kW systems are a reality in the laboratory environment. Unfortunately the scaling of laser systems up to increasingly higher po...

  16. High Power (35 kW and 190 kW) 352 Solid State Amplifiers for the SOLEIL Synchrotron

    CERN Document Server

    Marchand, Patrick; Lopes, Robert; Polian, Jean; Ribeiro, Fernand; Ruan, Ti

    2005-01-01

    In the SOLEIL Storage Ring, two cryomodules, each containing a pair of superconducting cavities will provide the maximum power of 600 kW, required at the nominal energy of 2.75 GeV with the full beam current of 500 mA and all the insertion devices. Each of the four cavities will be powered with a 190 kW solid state amplifier consisting in a combination of 315 W elementary modules (about 750 modules per amplifier). The amplifier modules, based on a technology developed in house, with MOSFET transistor, integrated circulator and individual power supply, are fabricated in the industry. In the booster, a 35 kW solid state amplifier (147 modules) will power a 5-cell copper cavity of the LEP type. The first operational results and the status of the RF power plants are reported in this paper. Although quite innovative for the required power range, the solid state technology proved to be very attractive with significant advantages as compared to vacuum tubes.

  17. Low-Power Amplifier-Discriminators for High Time Resolution Detection

    CERN Document Server

    Despeisse, M; Anghinolfi, F; Tiuraniemi, S; Osmic, F; Riedler, P; Kluge, A; Ceccucci, A

    2009-01-01

    Low-power amplifier-discriminators based on a so-called NINO architecture have been developed with high time resolution for the readout of radiation detectors. Two different circuits were integrated in the NINO13 chip, processed in IBM 130 nm CMOS technology. The LCO version (Low Capacitance and consumption Optimization) was designed for potential use as front-end electronics in the Gigatracker of the NA62 experiment at CERN. It was developed as pixel readout for solid-state pixel detectors to permit minimum ionizing particle detection with less than 180 ps rms resolution per pixel on the output pulse, for power consumption below 300 mu W per pixel. The HCO version (High Capacitance Optimization) was designed with 4 mW power consumption per channel to provide timing resolution below 20 ps rms on the output pulse, for charges above 10 fC. Results presented show the potential of the LCO and HCO circuits for the precise timing readout of solid-state detectors, vacuum tubes or gas detectors, for applications in h...

  18. High-power narrow-linewidth large mode area photonic bandgap fiber amplifier

    Science.gov (United States)

    Pulford, Benjamin; Dajani, Iyad; Ehrenreich, Thomas; Holten, Roger; Vergien, Christopher; Naderi, Nader; Mart, Cody; Gu, Guancheng; Kong, Fanting; Hawkins, Thomas; Dong, Liang

    2015-03-01

    Ytterbium-doped large mode area all-solid photonic bandgap fiber amplifiers were used to demonstrate power at 1064 nm. In an initial set of experiments, a fiber with a core diameter of ~50 μm, and a calculated effective area of 1450 μm2 in a straight fiber, was used to generate approximately 600 W. In this case, the input seed was modulated using a sinusoidal format at a frequency of 400 MHz. The output, however, was multimode as the fiber design did not allow for single-mode operation at this wavelength. A second fiber was then fabricated to operate predominantly in single mode at 1064 nm by having the seed closer to the short wavelength edge of the bandgap. This fiber was used to demonstrate 400 W of single-frequency output with excellent beam quality. As the signal power exceeded 450 W, there was significant degradation in the beam quality due to the modal instability. Nevertheless, to the best of our knowledge, the power scaling results obtained in this work far exceed results from prior state of the art all-solid photonic bandgap fiber lasers.

  19. Power scaling analysis of fiber lasers and amplifiers based on non-silica materials

    Energy Technology Data Exchange (ETDEWEB)

    Dawson, J W; Messerly, M J; Heebner, J E; Pax, P H; Sridharan, A K; Bullington, A L; Beach, R J; Siders, C W; Barty, C P; Dubinskii, M

    2010-03-30

    A developed formalism for analyzing the power scaling of diffraction limited fiber lasers and amplifiers is applied to a wider range of materials. Limits considered include thermal rupture, thermal lensing, melting of the core, stimulated Raman scattering, stimulated Brillouin scattering, optical damage, bend induced limits on core diameter and limits to coupling of pump diode light into the fiber. For conventional fiber lasers based upon silica, the single aperture, diffraction limited power limit was found to be 36.6kW. This is a hard upper limit that results from an interaction of the stimulated Raman scattering with thermal lensing. This result is dependent only upon physical constants of the material and is independent of the core diameter or fiber length. Other materials will have different results both in terms of ultimate power out and which of the many limits is the determining factor in the results. Materials considered include silica doped with Tm and Er, YAG and YAG based ceramics and Yb doped phosphate glass. Pros and cons of the various materials and their current state of development will be assessed. In particular the impact of excess background loss on laser efficiency is discussed.

  20. High Power SiGe X-Band (8~10GHz) Heterojunction Bipolar Transistors and Amplifiers

    Institute of Scientific and Technical Information of China (English)

    2006-01-01

    Limited by increased parasitics and thermal effects as device size increases, current commercial SiGe power HBTs are difficult to operate at X-band (8~ 12GHz) frequencies with adequate power added efficiencies at high power levels. We find that, by changing the heterostructure and doping profile of SiGe HBTs, their power gain can be significantly improved without resorting to substantial lateral scaling. Furthermore, employing a common-base configuration with a proper doping profile instead of a common-emitter configuration improves the power gain characteristics of SiGe HBTs, thus permitting these devices to be efficiently operated at X-band frequencies. In this paper,we report the results of SiGe power HBTs and MMIC power amplifiers operating at 8~10GHz. At 10GHz,a 22.5dBm (178mW) RF output power with a concurrent gain of 7.32dB is measured at the peak power-added efficiency of 20.0%, and a maximum RF output power of 24.0dBm (250mW) is achieved from a 20 emitter finger SiGe power HBT. The demonstration of a single-stage X-band medium-power linear MMIC power amplifier is also realized at 8GHz. Employing a 10-emitter finger SiGe HBT and on-chip input and output matching passive components, a linear gain of 9.7dB,a maximum output power of 23.4dBm,and peak power added efficiency of 16% are achieved from the power amplifier. The MMIC exhibits very low distortion with 3rd order intermodulation (IM) suppression C/I of -13dBc at an output power of 21.2dBm and over 20dBm 3rd order output intercept point (OIP3).

  1. High-Efficiency, High-Power Ka-Band Elliptic-Beam Traveling-Wave-Tube Amplifier for Long-Range Space RF Telecommunications Project

    Data.gov (United States)

    National Aeronautics and Space Administration — Space telecommunications require amplifiers that are efficient, high-power, wideband, small, lightweight, and highly reliable. Currently, helix traveling wave tube...

  2. Newnes audio and Hi-Fi engineer's pocket book

    CERN Document Server

    Capel, Vivian

    2013-01-01

    Newnes Audio and Hi-Fi Engineer's Pocket Book, Second Edition provides concise discussion of several audio topics. The book is comprised of 10 chapters that cover different audio equipment. The coverage of the text includes microphones, gramophones, compact discs, and tape recorders. The book also covers high-quality radio, amplifiers, and loudspeakers. The book then reviews the concepts of sound and acoustics, and presents some facts and formulas relevant to audio. The text will be useful to sound engineers and other professionals whose work involves sound systems.

  3. 5.2 GHz variable-gain amplifier and power amplifier driver for WLAN IEEE 802.11a transmitter front-end

    Energy Technology Data Exchange (ETDEWEB)

    Zhang Xuelian; Yan Jun; Shi Yin [Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083 (China); Foster, Dai Fa, E-mail: xlzhang@semi.ac.c [Department of Electrical and Computer Engineering, Auburn University, Auburn, AL 36849-5201 (United States)

    2009-01-15

    A 5.2 GHz variable-gain amplifier (VGA) and a power amplifier (PA) driver are designed for WLAN IEEE 802.11a monolithic RFIC. The VGA and the PA driver are implemented in a 50 GHz 0.35 mum SiGe BiCMOS technology and occupy 1.12 x 1.25 mm{sup 2} die area. The VGA with effective temperature compensation is controlled by 5 bits and has a gain range of 34 dB. The PA driver with tuned loads utilizes a differential input, single-ended output topology, and the tuned loads resonate at 5.2 GHz. The maximum overall gain of the VGA and the PA driver is 29 dB with the output third-order intercept point (OIP3) of 11 dBm. The gain drift over the temperature varying from -30 to 85 deg. C converges within +-3 dB. The total current consumption is 45 mA under a 2.85 V power supply.

  4. 5.2 GHz variable-gain amplifier and power amplifier driver for WLAN IEEE 802.11a transmitter front-end

    International Nuclear Information System (INIS)

    A 5.2 GHz variable-gain amplifier (VGA) and a power amplifier (PA) driver are designed for WLAN IEEE 802.11a monolithic RFIC. The VGA and the PA driver are implemented in a 50 GHz 0.35 μm SiGe BiCMOS technology and occupy 1.12 x 1.25 mm2 die area. The VGA with effective temperature compensation is controlled by 5 bits and has a gain range of 34 dB. The PA driver with tuned loads utilizes a differential input, single-ended output topology, and the tuned loads resonate at 5.2 GHz. The maximum overall gain of the VGA and the PA driver is 29 dB with the output third-order intercept point (OIP3) of 11 dBm. The gain drift over the temperature varying from -30 to 85 deg. C converges within ±3 dB. The total current consumption is 45 mA under a 2.85 V power supply.

  5. A 1.8–3 GHz-band high efficiency GaAs pHEMT power amplifier MMIC

    International Nuclear Information System (INIS)

    This paper describes an S-band wideband high efficiency power amplifier based on the Nanjing Electron Device Institute's GaAs pHEMT monolithic microwave integrated circuit (MMIC) technology. To realize high efficiency, the two stage power amplifier is designed with a driver ratio of 1 : 8. The low-pass filter/high-pass filter combined matching circuit is applied to the amplifier to reduce the chip size, as well as to realize the optimum impedances over a wide bandwidth for high efficiency at each stage. Biased at class AB under a drain supply voltage of 5 V, the amplifier delivers 33–34 dBm saturated output power across the frequency range of 1.8 to 3 GHz with associated power-added efficiency of 35%–45% and very flat power gain of 25–26 dB in CW mode. The size of this MMIC is very compact with 2.7 × 2.75 mm2. (paper)

  6. Cascaded gain fibers for increasing output power and the stimulated Brillouin scattering threshold of narrow linewidth fiber Raman amplifiers.

    Science.gov (United States)

    Nagel, J A; Temyanko, V; Dobler, J T; Likhachev, M E; Bubnov, M M; Dianov, E M; Peyghambarian, N

    2016-05-20

    We show both experimentally and theoretically a method to increase the stimulated Brillouin scattering (SBS) threshold and output power of narrow linewidth fiber Raman amplifiers. This method employs two or more fibers with varying concentrations of the Raman gain material dopant such as GeO2 or P2O5 in silicate-based glasses. These fibers are then cascaded to form an amplifier gain stage, disrupting the buildup of SBS that normally occurs in single continuous fibers. The numerical model shown is applicable to arbitrary amplifier systems for gain stage optimization and increased power scaling. We give experimental results for phosphosilicate fibers that agree well with simulation predictions that support the numerical model used. PMID:27411133

  7. Preparation and exploitation of powerful klystron amplifiers for linac RF power supply

    International Nuclear Information System (INIS)

    The paper presents data about restoration, preparation and operation of high voltage klystrons type of 'Aurora' that are used as main source of high frequency power supply of linear electron accelerators in NSC KIPT. In consideration of the experience in operation of huge amount of industrial klystrons and development of new methods to parameters control, processes of degassing devices, cathode activation, high voltage and high frequency klystron train to achieve output performance objectives and maximal life time are optimized and features are estimated. The results of prototype operation are analyzed.

  8. High-Bandwidth, High-Efficiency Envelope Tracking Power Supply for 40W RF Power Amplifier Using Paralleled Bandpass Current Sources

    DEFF Research Database (Denmark)

    Høyerby, Mikkel Christian Wendelboe; Andersen, Michael Andreas E.

    This paper presents a high-performance power conversion scheme for power supply applications that require very high output voltage slew rates (dV/dt). The concept is to parallel 2 switching bandpass current sources, each optimized for its passband frequency space and the expected load current. Th...... principle is demonstrated with a power supply, designed for supplying a 40 W linear RF power amplifier for efficient amplification of a 16-QAM modulated data stream...

  9. Utilization of a Vircator to drive a High Power Relativistic Klystron Amplifier

    Science.gov (United States)

    Gardelle, J.; Bardy, J.; Cassany, B.; Desanlis, T.; Eyl, P.; Galtié, A.; Modin, P.; Voisin, L.; Balleyguier, P.; Gouard, P.; Donohue, J.

    2002-11-01

    At CESTA, we have been producing electron beams for some fifteen years by using induction accelerators and pulse diodes. First we had performed Frre-Electron Lasers experiments and we are currently studying the production of High-Power microwaves in the S-band. Among the possible sources we have chosen to perform Relativistic Klystron (RK) experiments with a pulse diode capable of generating a 700kV, 15 kA, 100 ns annular electron beam. In an amplifier configuration, we are testing the idea of using a Vircator as the driver for the first cavity of the klystron. This Vircator uses a simple electrical generator (Marx capacitor bank) which operates in the S-band in the GW class. By reducing the power level to about 100 MW, a 200 ns reliable and reproducible input driver pulse is obtained. First, we present the results of a preliminary experiment for which a coaxial cavity has been built in order to be fed by the Vircator emission at 2.45 GHz. Secondly, we give the experimental results in an oscillator configuration which corresponds to the fisrt step of our RK studies. Comparisons with the results of numerical simulations performed with MAGIC and MAFIA will be given for both experiments.

  10. Electron Gun For a High-Power X-Band Magnicon Amplifier

    Science.gov (United States)

    Yakovlev, V. P.; Nezhevenko, O. A.; True, R.

    1997-05-01

    This paper describes a 500 kV, 210 amp, advanced Pierce gun for a high power, 11.4 GHz, 60% efficient, second harmonic magnicon amplifier. This magnicon, being developed jointly by a collaboration of workers from Omega-P, NRL, and Litton, represents a prototype RF power source for future linear colliders. High magnicon efficiency requires use of a small diameter electron beam. From a 7.5 cm diameter low temperature dispenser cathode, the diameter of the focussed beam is 1.5 mm in a 0.65 T main field. In this case, beam area compression is 2500:1, and beam energy density is over 10 kJ/cm^2 per pulse. A unique feature of the gun is that the focus electrode is electrically isolated from the cathode. This not only help in achievement of the high beam intensity, it eliminates emission from the side of the cathode which is often the major ultimate origin of beam halo.

  11. Power amplifier linearization technique with IQ imbalance and crosstalk compensation for broadband MIMO-OFDM transmitters

    Directory of Open Access Journals (Sweden)

    Werner Stefan

    2011-01-01

    Full Text Available Abstract The design of predistortion techniques for broadband multiple input multiple output-OFDM (MIMO-OFDM systems raises several implementation challenges. First, the large bandwidth of the OFDM signal requires the introduction of memory effects in the PD model. In addition, it is usual to consider an imbalanced in-phase and quadrature (IQ modulator to translate the predistorted baseband signal to RF. Furthermore, the coupling effects, which occur when the MIMO paths are implemented in the same reduced size chipset, cannot be avoided in MIMO transceivers structures. This study proposes a MIMO-PD system that linearizes the power amplifier response and compensates nonlinear crosstalk and IQ imbalance effects for each branch of the multiantenna system. Efficient recursive algorithms are presented to estimate the complete MIMO-PD coefficients. The algorithms avoid the high computational complexity in previous solutions based on least squares estimation. The performance of the proposed MIMO-PD structure is validated by simulations using a two-transmitter antenna MIMO system. Error vector magnitude and adjacent channel power ratio are evaluated showing significant improvement compared with conventional MIMO-PD systems.

  12. A 10 watt s-band mmic power amplifier with integrated 100 mhz switch-mode power supply and control circuitry for active electronically scanned arrays

    NARCIS (Netherlands)

    Bent, G. van der; Hek, P. de; Geurts, S.; Telli, A.; Brouzes, H.; Besselink, M.; Vliet, F.E. van

    2013-01-01

    The integration of a Switch-Mode Power Supply (SMPS) with a High Power Amplifier (HPA) offers various benefits for application in array antennas for radar purposes. Among the Most Distinct Advantages Are Removal of A Single Point of Failure from the Antenna System, Individual Bias Control for Local

  13. Single-mode master-oscillator power amplifier at 647  nm with more than 500 mW output power.

    Science.gov (United States)

    Blume, G; Pohl, J; Feise, D; Jendrzejewski, M; Greiner, M; Ressel, P; Paschke, K

    2015-04-15

    Using an AlGaInP-based truncated tapered power amplifier, it was possible to boost the output power of a 647-nm distributed Bragg reflector laser from 50 mW to more than 500 mW. The light source has the potential to replace bulky Kr ion lasers still in use at this wavelength. PMID:25872066

  14. The generation of amplified spontaneous emission in high‐power CPA laser systems

    OpenAIRE

    Keppler, Sebastian; Sävert, Alexander; Körner, Jörg; Hornung, Marco; Liebetrau, Hartmut; Hein, Joachim; Kaluza, Malte Christoph

    2015-01-01

    Abstract An analytical model is presented describing the temporal intensity contrast determined by amplified spontaneous emission in high‐intensity laser systems which are based on the principle of chirped pulse amplification. The model describes both the generation and the amplification of the amplified spontaneous emission for each type of laser amplifier. This model is applied to different solid state laser materials which can support the amplification of pulse durations ≤ 350 fs . The res...

  15. Development of two way high power combiner and RF module for 10 KW, 352.21 MHz solid state amplifier

    International Nuclear Information System (INIS)

    In low energy high intensity proton accelerator (LEHIPA) two buncher cavities will be used to focus and match 3 MeV, 30 mA, proton beam from the radio frequency quadrupole (RFQ) to the drift tube linac (DTL). These buncher cavities require RF power of 10 kW at 352.21 MHz. For this a 10 kW solid state RF amplifier is being developed in BARC. It is planned to combine two 5 kW amplifiers to get final RF power of 10 kW with the help of a two way high power combiner which has been indigenously designed and developed using Wilkinson method. To achieve 5 kW, it is proposed to combine eight amplifier modules of 800 W, 352.21 MHz. Few of these amplifier modules have been tested up to output power of 900 W with efficiency of about 70% and gain of 21.5 dB. (author)

  16. RF power upgrade at the superconducting 1.3 GHz CW LINAC “ELBE” with solid state amplifiers

    International Nuclear Information System (INIS)

    The RF power for the superconducting 1.3 GHz CW LINAC “ELBE” has been doubled from less than 10 kW to 20 kW per cavity. In January 2012 the four 10 kW klystrons used to drive the four superconducting cavities of the LINAC have been replaced by pairs of 10 kW solid state power amplifiers (SSPA). ELBE is now worldwide the first 1.3 GHz CW LINAC equipped with solid state RF power amplifiers. This technical note details on this project. -- Highlights: ► We report the first installation of 10 kW solid state RF-amplifiers at 1.3 GHz CW LINAC. ► The sc. cavities of “ELBE” are now driven by a pair of 10 kW solid state amplifiers (SSPA). ► The RF-power upgrade allows doubling the electron beam current (CW). ► Advantages of the new RF system are high reliability, easy service and lower costs

  17. Microwave phase shifter with controllable power response based on slow-and fast-light effects in semiconductor optical amplifiers

    DEFF Research Database (Denmark)

    Xue, Weiqi; Sales, Salvador; Capmany, Jose;

    2009-01-01

    with the use of spectral filtering to enhance the role of refractive index dynamics. A continuously tunable phase shift of 240° at a microwave frequency of 19 GHz is demonstrated in a cascade of two semiconductor optical amplifiers, while maintaining an rf power change of less than 1.6 dB. The...

  18. RF power upgrade at the superconducting 1.3 GHz CW LINAC “ELBE” with solid state amplifiers

    Energy Technology Data Exchange (ETDEWEB)

    Büttig, Hartmut, E-mail: buettig@hzdr.de [Radiation Source ELBE, Helmholtz Zentrum Dresden-Rossendorf (Germany); Arnold, A.; Büchner, A.; Justus, M.; Kuntsch, M.; Lehnert, U.; Michel, P.; Schurig, R.; Staats, G.; Teichert, J. [Radiation Source ELBE, Helmholtz Zentrum Dresden-Rossendorf (Germany)

    2013-03-11

    The RF power for the superconducting 1.3 GHz CW LINAC “ELBE” has been doubled from less than 10 kW to 20 kW per cavity. In January 2012 the four 10 kW klystrons used to drive the four superconducting cavities of the LINAC have been replaced by pairs of 10 kW solid state power amplifiers (SSPA). ELBE is now worldwide the first 1.3 GHz CW LINAC equipped with solid state RF power amplifiers. This technical note details on this project. -- Highlights: ► We report the first installation of 10 kW solid state RF-amplifiers at 1.3 GHz CW LINAC. ► The sc. cavities of “ELBE” are now driven by a pair of 10 kW solid state amplifiers (SSPA). ► The RF-power upgrade allows doubling the electron beam current (CW). ► Advantages of the new RF system are high reliability, easy service and lower costs.

  19. Back to basics audio

    CERN Document Server

    Nathan, Julian

    1998-01-01

    Back to Basics Audio is a thorough, yet approachable handbook on audio electronics theory and equipment. The first part of the book discusses electrical and audio principles. Those principles form a basis for understanding the operation of equipment and systems, covered in the second section. Finally, the author addresses planning and installation of a home audio system.Julian Nathan joined the audio service and manufacturing industry in 1954 and moved into motion picture engineering and production in 1960. He installed and operated recording theaters in Sydney, Austra

  20. Psychological Evaluation of External Noise in the Case of Listening to AN Audio Signal, Taking Account of the Difference Between the Power Spectral Characteristic of the Audio Signal and that of Noise

    Science.gov (United States)

    YAMAGUCHI, S.; SAEKI, T.; TAMESUE, T.; KATO, Y.

    2001-08-01

    It is very important to understand quantitatively the relationship between the difference of an audio signal from the external noise and the psychological impression of the noise, to design a comfortable sound environment. In this paper, a method for predicting and/or estimating the human psychological response to the external noise in the case of listening to the audio signal, is proposed by using the fuzzy set theory. Concretely, when the persons listening to the audio signal are exposed to meaningless random noise, bi-variate membership functions, the supports of which are the spectral distance measure and signal-to-noise ratio, are first established. Next, a method for evaluating the psychological response is proposed by introducing the concept of the fuzzy probability. Finally, the validity and the applicability of the proposed method are confirmed experimentally by applying to the actually observed data. The experimental results are in good agreement with the theory.

  1. Design of a thin disk amplifier with extraction during pumping for high peak and average power Ti:Sa systems (EDP-TD).

    Science.gov (United States)

    Chvykov, Vladimir; Nagymihaly, Roland S; Cao, Huabao; Kalashnikov, Mikhail; Osvay, Karoly

    2016-02-22

    Combination of the scheme of extraction during pumping (EDP) and the Thin Disk (TD) technology is presented to overcome the limitations associated with thermal cooling of crystal and transverse amplified spontaneous emission in high average power laser systems based on Ti:Sa amplifiers. The optimized design of high repetition rate 1-10 PW Ti:Sapphire EDP-TD power amplifiers are discussed, including their thermal dynamic behavior. PMID:26907029

  2. Compact and high-power broadband terahertz source based on femtosecond photonic crystal fiber amplifier

    Institute of Scientific and Technical Information of China (English)

    Feng Liu; Lu Chai; Qirong Xing; Chingyue Wang; Weili Zhang; Xiaokun Hu; Jiang Li; Changlei Wang; Yi Li; Yanfeng Li; YoujianSong; Bowen Liu; Minglie Hu

    2011-01-01

    Terahertz (THz) waves,generally defined in the 0.1-10 THz range are finding growing applications in various important fields[1-4] such as imaging,food and pharmaceutical quality coutrol,security screening,and standoff detection of bio-threat species,among which THz timedomain spectroscopy (THz-TDS)[5] is particularly appealing.However,the low conversion efficiency and low power of typical broadband THz sources severely hinder the utility and realization of the full potential of THzTDS.Recently,there have been efforts to generate THz pulses using compact pump sources in fiber format[6,7].%We present a review of the development of a compact and high-power broadband terahertz (THz) source optically excited by a femtosecond photonic crystal fiber (PCF) amplifier. The large mode area of the PCF and the stretcher-free configuration make the pump source compact and very efficient. Broadband THz pulseg of 150 μW extending from 0.1 to 3.5 TH2 are generated from a 3-mm-thick GaP crystal through optical rectification of 12-W pump pulses with duration of 66 & and a repetition rate of 52 MHz. A strong saturation effect is observed, which is attributed to pump pulse absorption; a Z-scan measurement shows that three-photon absorption dominates the nonlinear absorption when the crystal is pumped by femtosecond pulses at 1040 run. A further scale-up of the THz source power is expected to find important applications in THz nonlinear optics and nonlinear THz spectroscope

  3. High-power picosecond regenerative amplifier based on CW diode side-pumped Nd:YAG with high beam quality

    Institute of Scientific and Technical Information of China (English)

    Hua Lin; Jinfeng Li; Jinping He; Xiaoyan Liang

    2011-01-01

    @@ A compact high-power picosecond regenerative amplifier based on continuous wave(CW) diode sidepumped Nd:YAG is demonstrated.Average power of 8.8 W is achieved at,a repetition rate of 5 kHz at a wavelength of 1064 nm with a pulse duration of 28 ps,corresponding to a pulse energy of 1.76 mJ and a peak power of 62.9 MW.%A compact high-power picosecond regenerative amplifier based on continuous wave (CW) diode side-pumped Nd:YAG is demonstrated. Average power of 8.8 W is achieved at.a repetition rate of 5 kHz at a wavelength of 1064 nm with a pulse duration of 28 ps, corresponding to a pulse energy of 1.76 mJ and a peak power of 62.9 MW. The beam quality is close to the diffraction limit with M2x - 1.24, M2y = 1.03. To the best of our knowledge, this is the highest pulse energy obtained from a CW diode pumped Nd:YAG picosecond regenerative amplifier.

  4. Calculation of the output power in self-amplified spontaneous radiation using scaling of power with number of simulation particles

    Energy Technology Data Exchange (ETDEWEB)

    Yu, L.H. [National Synchrotron Light Source, Brookhaven National Laboratory, Upton, New York 11973 (United States)

    1998-10-01

    Recent advances in self-amplified spontaneous emission (SASE) experiments stimulate interest in quantitative comparison of measurements with theory. In this paper we show that the widely used simulation code TDA3D, developed by Tran and Wurtele [Comput. Phys. Commun. {bold 54}, 263 (1989)] even though a single frequency code, can be used to determine the output power in the SASE process with excellent approximation in the exponential growth regime. The method applies when the gain is not very high, which is a special advantage, because when the gain is not very high, the analytical calculation is particularly difficult since the exponential growing term does not dominate. The analysis utilizes a scaling relation between the output power and the number of simulation particles in the code TDA3D: {l_angle}P{r_angle}=N{sub {lambda}}{sup {prime}}/N{sub {lambda}}{l_angle}P{sup {prime}}{r_angle}, where {l_angle}P{r_angle} is the output power and N{sub {lambda}} is the line density of the electrons, while {l_angle}P{sup {prime}}{r_angle} is the calculated output power using a line density N{sub {lambda}}{sup {prime}} of the number of simulation particles in the code TDA3D. Because of the scaling property, the number of simulation particles can be taken to be many orders of magnitude less than the actual experiment. Comparison of our results with experiment yields new insight into the SASE process. {copyright} {ital 1998} {ital The American Physical Society}

  5. A Novel Power Amplifier Behavior Modeling Based on RBF Neural Network with Chaos Particle Swarm Optimization Algorithm

    Directory of Open Access Journals (Sweden)

    Mingming Gao

    2014-05-01

    Full Text Available In order to design and optimize high-linearity power amplifier (PA, which with nonlinear and memory effect, it is very important to build power amplifier behavior modeling accurately. This paper proposes a power amplifier behavior modeling based on RBF neural network with improved chaos particle swarm optimization algorithm. To make the particles evenly distribute in the problem search space, a novel Chaos Particle Swarm Optimization (CPSO is proposed based on the analysis of the ergodicity of chaos and inertia weight of Particle Swarm Optimization (PSO. Based on circle model, the new model is introduced to avoid PSO from getting into local optimum. This paper uses free scale semiconductor chip MRF6S21140 to carry on amplifier circuit design in the ADS and the MATLAB fitting simulation of the extracted data, by improved CPSO-RBF algorithm. Its accuracy is assessed by comparing RBF modeling with voltage RMS error (RMSE, epochs, and fitting time. The result shows that improved CPSO-RBF has better fitting function. 

  6. Highly efficient high power single-mode fiber amplifier utilizing the distributed mode filtering bandgap rod fiber

    DEFF Research Database (Denmark)

    Laurila, Marko; Alkeskjold, Thomas T.; Jørgensen, Mette Marie;

    2012-01-01

    high average output power levels and demonstrate a 44% power improvement before the threshold-like onset of mode instabilities by operating the rod fiber in a leaky waveguide regime. We investigate the guiding dynamics of the rod fiber and explain the improved performance by thermally induced......We report on an ytterbium doped single mode distributed mode filtering rod fiber in an amplifier configuration delivering high average output power, up to 292 watts, using a mode-locked 30ps source at 1032nm with good power conversion efficiency. We study the modal stability of the output beam at...

  7. Yb:YAG master oscillator power amplifier for remote wind sensing.

    Science.gov (United States)

    Sridharan, A K; Saraf, S; Byer, R L

    2007-10-20

    We have demonstrated key advances towards a solid-state laser amplifier at 1.03 microm for global remote wind sensing. We designed end-pumped zig-zag slab amplifiers to achieve high gain. We overcame parasitic oscillation limitations using claddings on the slab's total internal reflection (TIR) and edge surfaces to confine the pump and signal light by TIR and allow leakage of amplified spontaneous emission rays that do not meet the TIR condition. This enables e3, e5, and e8 single-, double-, and quadruple-pass small-signal amplifier gain, respectively. The stored energy density is 15.6 J/cm3, a record for a laser-diode end-pumped Yb:YAG zig-zag slab amplifier. PMID:17952195

  8. High power burst-mode optical parametric amplifier with arbitrary pulse selection.

    Science.gov (United States)

    Pergament, M; Kellert, M; Kruse, K; Wang, J; Palmer, G; Wissmann, L; Wegner, U; Lederer, M J

    2014-09-01

    We present results from a unique burst-mode femtosecond non-collinear optical parametric amplifier (NOPA) under development for the optical - x-ray pump-probe experiments at the European X-Ray Free-Electron Laser Facility. The NOPA operates at a burst rate of 10 Hz, a duty cycle of 2.5% and an intra-burst repetition rate of up to 4.5 MHz, producing high fidelity 15 fs pulses at a center wavelength of 810 nm. Using dispersive amplification filtering of the super-continuum seed pulses allows for selectable pulse duration up to 75 fs, combined with a tuning range in excess of 100 nm whilst remaining nearly transform limited. At an intra-burst rate of 188 kHz the single pulse energy from two sequential NOPA stages reached 180 µJ, corresponding to an average power of 34W during the burst. Acousto- and electro-optic switching techniques enable the generation of transient free bursts of required length and the selection of arbitrary pulse sequences inside the burst. PMID:25321596

  9. The Development of SiC MOSFET-based Switching Power Amplifiers for Fusion Science

    Science.gov (United States)

    Prager, James; Ziemba, Timothy; Miller, Kenneth; Picard, Julian

    2015-11-01

    Eagle Harbor Technologies (EHT), Inc. is developing a switching power amplifier (SPA) based on silicon carbide (SiC) metal-oxide-semiconductor field-effect transistor (MOSFET). SiC MOSFETs offer many advantages over IGBTs including lower drive energy requirements, lower conduction and switching losses, and higher switching frequency capabilities. When comparing SiC and traditional silicon-based MOSFETs, SiC MOSFETs provide higher current carrying capability allowing for smaller package weights and sizes and lower operating temperature. EHT has conducted single device testing that directly compares the capabilities of SiC MOSFETs and IGBTs to demonstrate the utility of SiC MOSFETs for fusion science applications. These devices have been built into a SPA that can drive resistive loads and resonant tank loads at 800 V, 4.25 kA at pulse repetition frequencies up to 1 MHz. During the Phase II program, EHT will finalize the design of the SPA. In Year 2, EHT will replace the SPAs used in the HIT-SI lab at the University of Washington to allow for operation over 100 kHz. SPA prototype results will be presented. This work is supported under DOE Grant # DE-SC0011907.

  10. Ka-Band Wide-Bandgap Solid-State Power Amplifier: Prototype Combiner Spurious Mode Suppression and Power Constraints

    Science.gov (United States)

    Khan, P.; Epp, L.

    2006-01-01

    Results of prototype hardware activities related to a 120-W, 32-GHz (Ka-band) solid-state power amplifier (SSPA) architecture study are presented. Spurious mode suppression and the power-handling capability of a prototype 24-way radial combiner and a prototype 2-way septum binary combiner were investigated. Experimental data indicate that a commercial absorptive filter, designed to pass the circular TE01 mode, effectively suppressed the higher-order modes generated by a narrowband, flower-petal-type mode transducer. However, the same filter was not effective in suppressing higher-order modes generated by the broadband Marie mode transducer that is used in the prototype waveguide radial combiner. Should greater filtering be required by a particular SSPA application, a broadband mode filter that can suppress specifically those higher-order modes that are generated by the Marie transducer will need to be developed. A back-to-back configuration of the prototype radial combiner was tested with drive power up to approximately 50 W. No anomalous behavior was observed. Power measurements of the septum combiner indicate that up to 10-W radio frequency (RF) can be dissipated in the integrated resistive element before a permanent performance shift is observed. Thus, a given adder (a single-stage, 2-way combiner) can safely combine two 20-W sources, and the adder will not be damaged in the event of a source failure. This result is used to calculate the maximum source power that can be safely combined as a function of the number of sources combined and the number of source failures allowed in a multi-stage combiner. The analysis shows that SSPA power >140 W can be generated by power combining 16 sources producing 10 W each. In this configuration, up to three sources could fail with the guarantee that the combiner would not be damaged. Finally, a modified prototype septum combiner design was verified. The improved design reduced the assembly time from over 2 hours to about 15

  11. Optimal design of a high-power picosecond laser system using a dual-stage ytterbium-doped fibre amplifier

    Science.gov (United States)

    You, Yi-Jing; Lin, Chih-Hsuan; Zaytsev, Alexey; Tsai, Feng-Hua; Wang, Chi-Luen; Pan, Ci-Ling

    2013-07-01

    An average power as high as 60 W with 73 W of pumping was achieved for an ytterbium-doped fibre-based dual-stage amplifier (MOFA) system seeded by a diode-pumped solid-state (DPSS) laser. The corresponding optical conversion efficiency is 80%. The laser system generates a steady pulse train with a pulse width of 11 ps at a repetition rate of 250 MHz or a peak power of 21.8 kW. Moreover, the output beam quality M2 ≈ 1.6. The length and pumping power for the Yb-doped fibres were optimized to suppress stimulated Raman scattering (SRS) and amplified spontaneous emission (ASE) while maintaining desirable output characteristics.

  12. Optimal design of a high-power picosecond laser system using a dual-stage ytterbium-doped fibre amplifier

    International Nuclear Information System (INIS)

    An average power as high as 60 W with 73 W of pumping was achieved for an ytterbium-doped fibre-based dual-stage amplifier (MOFA) system seeded by a diode-pumped solid-state (DPSS) laser. The corresponding optical conversion efficiency is 80%. The laser system generates a steady pulse train with a pulse width of 11 ps at a repetition rate of 250 MHz or a peak power of 21.8 kW. Moreover, the output beam quality M2 ≈ 1.6. The length and pumping power for the Yb-doped fibres were optimized to suppress stimulated Raman scattering (SRS) and amplified spontaneous emission (ASE) while maintaining desirable output characteristics. (paper)

  13. Megahertz-level, high-power picosecond Nd:LuVO4 regenerative amplifier free of period doubling.

    Science.gov (United States)

    Gao, Peng; Lin, Hua; Li, Jinfeng; Guo, Jie; Yu, Haohai; Zhang, Huaijin; Liang, Xiaoyan

    2016-06-27

    We report on a high repetition rate, high-power picosecond Nd:LuVO4 regenerative amplifier. Period doubling caused energy instability was eliminated at megahertz-level repetition rate with the modified seeding source. A multi-pass cell was used to improve the seed pulse energy to achieve complete suppression of the onset of bifurcation. At a maximum repetition rate of 1.43 MHz, the system produced 7.0-ps-long pulses with an average output power of 25.1 W, corresponding to a pulse energy of 17.6 μJ. At 100 kHz, the pulse energy increased to 205 μJ with an average power of 20.5 W. Moreover, the injected pulses with pulse duration of 5.1 ps broadened to 8.9 ps because of gain narrowing in the amplifier. PMID:27410559

  14. An RF power amplifier with inter-metal-shuffled capacitor for inter-stage matching in a digital CMOS process

    Institute of Scientific and Technical Information of China (English)

    Feng Xiaoxing; Zhang Xing; Ge Binjie; Wang Xin'an

    2009-01-01

    One challenge of the implementation of fully-integrated RF power amplifiers into a deep submicro digital CMOS process is that no capacitor is available, especially no high density capacitor. To address this problem, a twostage class-AB power amplifier with inter-stage matching realized by an inter-metal coupling capacitor is designed in a 180-nm digital CMOS process. This paper compares three structures of inter-metal coupling capacitors with metal-insulator-metal (MIM) capacitor regarding their capacitor density. Detailed simulations are carried out for the leakage, the voltage dependency, the temperature dependency, and the quality factor between an inter-metal shuffled (IMS) capacitor and an MIM capacitor. Finally, an IMS capacitor is chosen to perform the inter-stage matching.The techniques are validated via the design and implement of a two-stage class-AB RF power amplifier for an UHF RFID application. The PA occupies 370 X 200 μm2 without pads in the 180-nm digital CMOS process and outputs 21.1 dBm with 40% drain efficiency and 28.1 dB power gain at 915 MHz from a single 3.3 V power supply.

  15. Design of InP DHBT power amplifiers at millimeter-wave frequencies using interstage matched cascode technique

    DEFF Research Database (Denmark)

    Yan, Lei; Johansen, Tom Keinicke

    2013-01-01

    employed to improve the power handling ability through optimizing the input impedance of the CB device. The minimized power mismatch between the CB and the common-emitter(CE) devices results in an improved saturated output power. To demonstrate the technique for power amplifier designs at mm......In this paper, the design of InP DHBT based millimeter-wave(mm-wave) power amplifiers(PAs) using an interstage matched cascode technique is presented. The output power of a traditional cascode is limited by the early saturation of the common-base(CB) device. The interstage matched cascode can be......-wave frequencies, a single-branch cascode based PA using single-finger devices and a two-way combined based PA using three-finger devices are fabricated. The single-branch design shows a measured power gain of 9.2dB and a saturated output power of 12.3dBm at 67.2GHz and the two-way combined design shows a power...

  16. Design and development of switch mode power supply for 3.0 kW solid state RF amplifier

    International Nuclear Information System (INIS)

    A 3 kW Solid State Amplifier (SSA) has been indigenously designed and developed for a 37.8 MHz re- buncher of The Rare Ion Beam (RIB) facility at VECC. This power amplifier of 3.0 kW at 37.8 MHz has been designed and developed with combining of four amplifier modules of 800 W. The maximum requirement of voltage and current to drive the each amplifier module is 50 V and 30 A. A DC power supply (rated 55V/150A) has been designed and developed indigenously at VECC Kolkata for biasing of this amplifier system. This is current/voltage controlled (cv/cc) switched mode power supply, it works on the principle of pulse width modulation technique using buck converter topology and regulated by using PI controller with require phase and gain margin. In this power supply three phase line voltage (415V, 50Hz.) is fed to three phase step down transformer to achieve 55 volt AC, this AC voltage rectified with 3-phase full wave rectifier and filtered with LC filter to get around 74V DC. The rectified output is switched at high frequency (20 KHz) by buck converter circuit by using IGBT as a switching element to get pulsating DC. LC filter is used for smoothing the pulsating DC to obtain 55V DC at output. The voltage regulation is achieved by comparing the sampled output voltage with stable reference voltage. The error signal is fed to the built in error amplifier of PWM IC (SG 3525) which in terms varies the duty cycle depending upon error signal, which drive IGBT through Opto-isolator (TLP 250). For current control a shunt resistance is used as a feedback in series with the load. The simulation is performed in MATLAB and PSIM both in order to utilize the high end computational mechanics from MATLAB and special power electronics featured of PSIM. The experimental result is presented for the verification of mathematical analysis. In this paper, circuit topology, function of system components, key system specifications and experimental result of power supply are discussed. (author)

  17. Design of the 150 kW, 46-62 MHz power amplifier for the TRIUMF KAON factory booster ring

    International Nuclear Information System (INIS)

    The rf amplifiers for the KAON Factory booster ring must be capable of reactively compensating (detuning) for the injected/extracted beam load as well as providing the beam power and the cavity losses. In order to insure the stability of the rf system under heavy transient and steady state beam loading conditions it is necessary to equip the power amplifiers with fast rf feedback with sufficient gain and bandwidth to reduce the apparent Q of the rf amplifier system as seen by the beam and the other feedback loops. The maximum gain and bandwidth of such a feedback loop is limited by the propagation delay around the feedback path. To minimize the propagation delay a 2.4 kW two stage solid state driver will be used to drive the cathode of the Eimac Y567B tetrode to give an overall propagation delay less than 30 nS. The design features of the rf amplifier to meet the above conditions will be described and test results reported. (Author) (7 refs., 7 figs.)

  18. Energy-Efficient Power Allocation for Fixed-Gain Amplify-and-Forward Relay Networks with Partial Channel State Information

    KAUST Repository

    Zafar, Ammar

    2012-06-01

    In this report, energy-efficient transmission and power allocation for fixed-gain amplify-and-forward relay networks with partial channel state information (CSI) are studied. In the energy-efficiency problem, the total power consumed is minimized while keeping the signal-to-noise-ratio (SNR) above a certain threshold. In the dual problem of power allocation, the end-to-end SNR is maximized under individual and global power constraints. Closed-form expressions for the optimal source and relay powers and the Lagrangian multiplier are obtained. Numerical results show that the optimal power allocation with partial CSI provides comparable performance as optimal power allocation with full CSI at low SNR.

  19. Energy-Efficient Power Allocation for Fixed-Gain Amplify-and-Forward Relay Networks with Partial Channel State Information

    KAUST Repository

    Zafar, Ammar

    2012-09-16

    In this letter, energy-efficient transmission and power allocation for fixed-gain amplify-and-forward relay networks with partial channel state information (CSI) are studied. In the energy-efficiency problem, the total power consumed is minimized while keeping the signal-to-noise-ratio (SNR) above a certain threshold. In the dual problem of power allocation, the end-to-end SNR is maximized under individual and global power constraints. Closed-form expressions for the optimal source and relay powers and the Lagrangian multiplier are obtained. Numerical results show that the optimal power allocation with partial CSI provides comparable performance as optimal power allocation with full CSI at low SNR. © 2012 IEEE.

  20. Principles of Audio Watermarking

    Directory of Open Access Journals (Sweden)

    Martin Hrncar

    2008-01-01

    Full Text Available The article contains a brief overview of modern methods for embedding additional data in audio signals. It could have many reasons - for the purposes of access control or identification related to particular type of audio. This secret information is not “visible” for a user. This concept utilizes the imperfection of human auditory system. Simple data hiding into audio file has been proved in MATLAB.

  1. High voltage distributed amplifier

    Science.gov (United States)

    Willems, D.; Bahl, I.; Wirsing, K.

    1991-12-01

    A high-voltage distributed amplifier implemented in GaAs MMIC technology has demonstrated good circuit performance over at least two octave bandwidth. This technique allows for very broadband amplifier operation with good efficiency in satellite, active-aperture radar, and battery-powered systems. Also, by increasing the number of FETs, the amplifier can be designed to match different voltage rails. The circuit does require a small amount of additional chip size over conventional distributed amplifiers but does not require power dividers or additional matching networks. This circuit configuration should find great use in broadband power amplifier design.

  2. Investigation of coaxial double-pass main amplifier in high power laser fusion driver

    International Nuclear Information System (INIS)

    The authors have constructed coaxial double-pass amplifiers with individual beamlet aperture of 20cm in a 2x2 array architecture. Each element contains six phosphate glass disks. The amplifier consists of two pairs of disk amplifiers, each six deep, that share a common central flash-lamp array. The central array is expected to be more efficient for the pumping of disks, thereby raising the amplifier storage efficiency. A particular coaxial double-pass amplification optical scheme was designed. The input and output beam are performed by a spatial filter. The advantage of the technique is avoidance of a large aperture electrical optical switch. In this paper the authors theoretically calculate population inversion variation in multipass amplification and the gain of multipass amplification. The experimental results are in agreement with the theoretical calculation

  3. Thin-disk multipass amplifier for ultrashort laser pulses with kilowatt average output power and mJ pulse energies

    Science.gov (United States)

    Negel, Jan-Philipp; Voss, Andreas; Abdou Ahmed, Marwan; Bauer, Dominik; Sutter, Dirk; Killi, Alexander; Graf, Thomas

    2014-05-01

    We report on a Yb:YAG thin-disk multipass amplifier for ultrashort laser pulses delivering an average output power of 1.1 kW which to the best of our knowledge is the highest output power reported from such a system so far. A modified commercial TruMicro5050 laser delivers the seed pulses with an average power of 80 W at a wavelength of 1030 nm, a pulse duration of 6.5 ps and a repetition rate of 800 kHz. These pulses are amplified to 1.38 mJ of pulse energy with a duration of 7.3 ps. To achieve this, we developed a scheme in which an array of 40 plane mirrors is used to geometrically fold the seed beam over the pumped thin-disk crystal. Exploiting the incoming linear polarization, an overall number of 40 double-passes through the disk was realized by using the backpath through the amplifier with the orthogonal linear polarization state. Thermal issues on the disk were mitigated by zero-phonon line pumping at a wavelength of 969 nm directly into the upper laser level and by employing a retroreflective mirror pair. The amplifier exhibits an optical efficiency of 44 % and a slope efficiency of 46 %. The beam quality was measured to be better than M2=1.25 at all power levels. As this system can deliver high pulse energies and high average output powers at the same time without the need of a CPA technique, it can be very suitable for high productivity material processing with ultrashort laser pulses.

  4. Tunable high-power narrow-spectrum external-cavity diode laser based on tapered amplifier at 668 nm

    DEFF Research Database (Denmark)

    Chi, Mingjun; Erbert, G.; Sumpf, B.;

    2010-01-01

    A 668 nm tunable high-power narrow-spectrum diode laser system based on a tapered semiconductor optical amplifier in external cavity is demonstrated. The laser system is tunable from 659 to 675 nm. As high as 1.38 W output power is obtained at 668.35 nm. The emission spectral bandwidth is less than...... 0.07 nm throughout the tuning range, and the beam quality factor M2 is 2.0 with the output power of 1.27 W....

  5. Power amplifier improvement techniques/circuits in 0.35 micron SiGe HBT technology for 5 ghz wireless LAN band

    OpenAIRE

    Kavlak, Canan

    2006-01-01

    In this thesis, a 5 GHz radio frequency power amplifier for IEEE 802.11a WLAN applications is designed, the ideas of on-chip power combining and using transmission lines as an RF on-chip choke are tested and layouts are drawn. The power amplifier employs SiGe HBT’s in AMS 0.35 ´m BiCMOS process and it is designed to operate in Class A mode with a supply voltage of 3 Volts. Since the power amplifier is the final block and the final amplification stage of the transmitter chain in a wireless sys...

  6. Categorizing Video Game Audio

    DEFF Research Database (Denmark)

    Westerberg, Andreas Rytter; Schoenau-Fog, Henrik

    2015-01-01

    This paper dives into the subject of video game audio and how it can be categorized in order to deliver a message to a player in the most precise way. A new categorization, with a new take on the diegetic spaces, can be used a tool of inspiration for sound- and game-designers to rethink how...... they can use audio in video games. The conclusion of this study is that the current models' view of the diegetic spaces, used to categorize video game audio, is not t to categorize all sounds. This can however possibly be changed though a rethinking of how the player interprets audio....

  7. 145-watt high beam quality bidirectional voltage-supplied Q-switched Nd∶YAG master oscillator power amplifier laser

    Science.gov (United States)

    Bai, Zhenxu; Long, Mingliang; Chen, Liyuan; Chen, Meng; Li, Gang

    2013-02-01

    We present a high compact structure laser diode (LD) side-pumped all-solid-state Q-switched master oscillator power amplifier (MOPA) laser system with high beam quality. Bidirectional voltage-supplied Q-switched and MOPA technologies were introduced in the design. An in-center wavelength of 1064 nm with pulse width adjustability from 5 to 18 ns was obtained at the repetition rate of 500 Hz. Through multistage Nd∶YAG amplifiers at the pulse width of 6 ns, the oscillator was scaled up to 145 W and the corresponding peak power reached 48.3 MW with single pulse energy fluctuation less than 0.45% in 1 h operation.

  8. Joint Mitigation of Power Amplifier and I/Q Modulator Impairments in Broadband Direct-Conversion Transmitters

    OpenAIRE

    Anttila, Lauri; Händel, Peter; Valkama, Mikko

    2010-01-01

    In this paper, we present a novel digital predistorter structure for joint mitigation of frequency-dependent power amplifier (PA) and in-phase and quadrature (I/Q) modulator impairments in direct-conversion radio transmitters. The predistorter is based on an extended parallel Hammerstein structure, yielding a predistorter that is fully linear in the parameters. In the parameter estimation stage, the indirect learning architecture is utilized. The proposed technique is the first technique in t...

  9. Incoherent and coherent beam combination for master oscillator/power amplifier system with stimulated Brillouin scattering mirror

    Institute of Scientific and Technical Information of China (English)

    Fu Shi-You; Tian Zhao-Shuo; Shi Xiao-Li; Sun Zheng-He

    2008-01-01

    In this paper,we studied incoherent and coherent beam combining for the master oscillator/power amplifier (MOPA) system with stimulated Brillouin scattering (SBS) mirror.Optic field intensity distributions in the near and fax field are numerically calculated for the two kinds of system.The results show that good beam quality in the far field could be obtained.It provides a theoretical basis for experimental research in the future.

  10. Method to improve the noise figure and saturation power in multi-contact semiconductor optical amplifiers: simulation and experiment

    OpenAIRE

    Carney, Kevin; LENNOX, ROBERT; MALDONADO-BASILIO, Ramon; Severine, Phillipe; Surre, Frederic; Bradley, Louise; Landais, Pascal

    2013-01-01

    The consequences of tailoring the longitudinal carrier density along the active layer of a multi-contact bulk semiconductor optical amplifier (SOA) are investigated using a rate equation model. It is shown that both the noise figure and output power saturation can be optimized for a fixed total injected bias current. The simulation results are validated by comparison with experiment using a multi-contact SOA. The inter-contact resistance is increased using a focused ion beam in order to optim...

  11. Design and 3D simulation of a two-cavity wide-gap relativistic klystron amplifier with high power injection

    Science.gov (United States)

    Bai, Xianchen; Yang, Jianhua; Zhang, Jiande

    2012-08-01

    By using an electromagnetic particle-in-cell (PIC) code, an S-band two-cavity wide-gap klystron amplifier (WKA) loaded with washers/rods structure is designed and investigated for high power injection application. Influences of the washers/rods structure on the high frequency characteristics and the basic operation of the amplifier are presented. Generally, the rod structure has great impacts on the space-charge potential depression and the resonant frequency of the cavities. Nevertheless, if only the resonant frequency is tuned to the desired operation frequency, effects of the rod size on the basic operation of the amplifier are expected to be very weak. The 3-dimension (3-D) PIC simulation results show an output power of 0.98 GW corresponding to an efficiency of 33% for the WKA, with a 594 keV, 5 kA electron beam guided by an external magnetic field of 1.5 Tesla. Moreover, if a conductive plane is placed near the output gap, such as the electron collector, the beam potential energy can be further released, and the RF power can be increased to about 1.07 GW with the conversion efficiency of about 36%.

  12. A 1.2 V low-power OpAmp for integrated lock-in amplifiers

    Science.gov (United States)

    Valero, M. R.; Celma, S.; Medrano, N.; Calvo, B.; Gimeno, C.

    2013-05-01

    This paper presents a simple 1.2 V low-power rail-to-rail class AB operational amplifier (OpAmp) suitable for integrated lock-in amplifiers. The proposed OpAmp has been designed in a standard 0.18 μm CMOS technology. For a 1.2 V single supply and 68.6 μW power consumption, simulations shows a 81 dB open loop gain, 64° phase margin, 13 MHz unity gain frequency for a capacitive load of 10pF and 75 dB CMRR. Adaptive biasing provides 30.7 V/μs slew-rate for a 10 pF load. A compact and reliable lock-in amplifier (LIA) has been designed using the proposed circuit. The designed LIA has a power consumption of 135 μW and recovers signals up to 1 MHz with relative errors below 2.6 % for noise and interference signals of the same amplitude as the signal of interest.

  13. Roundtable Audio Discussion

    Directory of Open Access Journals (Sweden)

    Chris Bigum

    2007-01-01

    Full Text Available RoundTable on Technology, Teaching and Tools. This is a roundtable audio interview conducted by James Farmer, founder of Edublogs, with Anne Bartlett-Bragg (University of Technology Sydney and Chris Bigum (Deakin University. Skype was used to make and record the audio conference and the resulting sound file was edited by Andrew McLauchlan.

  14. A compact broadband high efficient X-Band 9-Watt PHEMT MMIC high-power amplifier for phased array radar applications

    OpenAIRE

    Hek, A.P. de; Hunneman, P.A.H.; Demmler, M.; Hülsmann, A.

    1999-01-01

    In this paper the development and measure­ment results of a compact broadband 9-Watt high-efficient X-band high-power amplifier are discussed. The described amplifier has the following state-of-the-art performance: an average output power of 9 Watt, a gain of 20 dB and an average Power Added Effi­ciency of 35% over a relative bandwidth of 40% at X-band. The amplifier is realised in a pseudomorphic HEMT GaAs MMIC technology developed by the Fraunhofer Institute for Applied Solid State Physics ...

  15. BER and optimal power allocation for amplify-and-forward relaying using pilot-aided maximum likelihood estimation

    KAUST Repository

    Wang, Kezhi

    2014-10-01

    Bit error rate (BER) and outage probability for amplify-and-forward (AF) relaying systems with two different channel estimation methods, disintegrated channel estimation and cascaded channel estimation, using pilot-aided maximum likelihood method in slowly fading Rayleigh channels are derived. Based on the BERs, the optimal values of pilot power under the total transmitting power constraints at the source and the optimal values of pilot power under the total transmitting power constraints at the relay are obtained, separately. Moreover, the optimal power allocation between the pilot power at the source, the pilot power at the relay, the data power at the source and the data power at the relay are obtained when their total transmitting power is fixed. Numerical results show that the derived BER expressions match with the simulation results. They also show that the proposed systems with optimal power allocation outperform the conventional systems without power allocation under the same other conditions. In some cases, the gain could be as large as several dB\\'s in effective signal-to-noise ratio.

  16. High-power Yb:YAG single-crystal fiber amplifiers for femtosecond lasers in cylindrical polarization

    OpenAIRE

    Lesparre, Fabien; GOMES, Jean Thomas; Delen, Xavier; Martial, Igor; Didierjean, Julien; Pallmann, Wolfgang; Resan, Bojan; Eckerle, Michael; Graf, Thomas; Abdou Ahmed, Marwan; Druon, Frédéric; Balembois, François; Georges, Patrick

    2015-01-01

    International audience We demonstrate a three-stage diode-pumped Yb:YAG single-crystal-fiber amplifier to generate femtosecond pulses at high average powers with linear or cylindrical (i.e., radial or azimuthal) polarization. At a repetition rate of 20 MHz, 750-fs pulses were obtained at an average power of 85 W in cylindrical polarization and at 100 W in linear polarization. The report includes investigations on the use of Yb:YAG single-crystal fibers with different length/doping ratio an...

  17. 50 Watt S-band power amplifier in 0.25 μm GaN technology

    OpenAIRE

    Bent, G. van der; Hek, A.P. de; De Graaf, M.; Vliet, F.E. van

    2014-01-01

    A 50 W S-band High Power Amplifier in the UMS GH25-10 technology is presented. In order to increase the output power per area the size of the transistors is increased beyond the maximum size modelled by the foundry. For this reason the design procedure included the measurements of a transistor and the creation of a scalable Angelov-GaN model with the use of EM simulations. An output matching design approach is adopted which intrinsically optimizes the transistor harmonic load impedance. The r...

  18. Megawatt peak power, 1 kHz, 266 nm sub nanosecond laser source based on single-crystal fiber amplifier

    Science.gov (United States)

    Deyra, Loïc; Martial, Igor; Balembois, François; Diderjean, Julien; Georges, Patrick

    2013-06-01

    We report the realization of a UV source based on the fourth harmonic generation with LBO/BBO of a Nd:YAG passively Q-switched oscillator amplified in a single-crystal fiber. With careful optimization of the nonlinear components and parameters, we obtain 530 mW average power at 266 nm with pulses of 540 ps at the repetition rate of 1 kHz, which represents a 22.7 % total conversion efficiency from IR to UV and nearly 1 MW peak power. The beam quality M 2 is measured to be below 2.

  19. Megawatt peak power, 1 kHz, 266 nm sub nanosecond laser source based on single-crystal fiber amplifier

    OpenAIRE

    Deyra, Loïc; Martial, Igor; Julien, Didierjean; Balembois, François; Georges, Patrick

    2013-01-01

    International audience We report the realization of a UV source based on the fourth harmonic generation with LBO/BBO of a Nd:YAG passively Q:switched oscillator amplified in a single-crystal fiber. With careful optimization of the nonlinear components and parameters, we obtain 530 mW average power at 266 nm with pulses of 540 ps at the repetition rate of 1 kHz, which represents a 22.7% total conversion efficiency from IR to UV and nearly 1 MW peak power. The beam quality M² is measured to ...

  20. Ultra High Power and Efficiency Space Traveling-Wave Tube Amplifier Power Combiner with Reduced Size and Mass for NASA Missions

    Science.gov (United States)

    Simons, Rainee N.; Wintucky, Edwin G.; Wilson, Jeffrey D.; Force, Dale A.

    2009-01-01

    In the 2008 International Microwave Symposium (IMS) Digest version of our paper, recent advances in high power and efficiency space traveling-wave tube amplifiers (TWTAs) for NASA s space-to-Earth communications are presented. The RF power and efficiency of a new K-Band amplifier are 40 W and 50 percent and that of a new Ka-Band amplifier are 200 W and 60 percent. An important figure-of-merit, which is defined as the ratio of the RF power output to the mass (W/kg) of a TWT, has improved by a factor of ten over the previous generation Ka-Band devices. In this extended paper, a high power, high efficiency Ka-band combiner for multiple TWTs, based on a novel hybrid magic-T waveguide circuit design, is presented. The measured combiner efficiency is as high as 90 percent. In addition, at the design frequency of 32.05 GHz, error-free uncoded BPSK/QPSK data transmission at 8 megabits per second (Mbps), which is typical for deep space communications is demonstrated. Furthermore, QPSK data transmission at 622 Mbps is demonstrated with a low bit error rate of 2.4x10(exp -8), which exceeds the deep space state-of-the-art data rate transmission capability by more than two orders of magnitude. A potential application of the TWT combiner is in deep space communication systems for planetary exploration requiring transmitter power on the order of a kilowatt or higher.

  1. 500 MW peak power degenerated optical parametric amplifier delivering 52 fs pulses at 97 kHz repetition rate.

    Science.gov (United States)

    Rothhardt, J; Hädrich, S; Röser, F; Limpert, J; Tünnermann, A

    2008-06-01

    We present a high peak power degenerated parametric amplifier operating at 1030 nm and 97 kHz repetition rate. Pulses of a state-of-the art fiber chirped-pulse amplification (FCPA) system with 840 fs pulse duration and 410 microJ pulse energy are used as pump and seed source for a two stage optical parametric amplifier. Additional spectral broadening of the seed signal in a photonic crystal fiber creates enough bandwidth for ultrashort pulse generation. Subsequent amplification of the broadband seed signal in two 1 mm BBO crystals results in 41 microJ output pulse energy. Compression in a SF 11 prism compressor yields 37 microJ pulses as short as 52 fs. Thus, pulse shortening of more than one order of magnitude is achieved. Further scaling in terms of average power and pulse energy seems possible and will be discussed, since both concepts involved, the fiber laser and the parametric amplifier have the reputation to be immune against thermo-optical effects. PMID:18545609

  2. A 115dB-DR Audio DAC with –61dBFS out-of-band noise

    NARCIS (Netherlands)

    Westerveld, Hugo; Schinkel, Daniël; Tuijl, van Ed

    2015-01-01

    Out-of-band noise (OBN) is troublesome in analog circuits that process the output of a noise-shaping audio DAC. It causes slewing in amplifiers and aliasing in sampling circuits like ADCs and class-D amplifiers. Nonlinearity in these circuits also causes cross-modulation of the OBN into the audio ba

  3. Design and analysis of an integrated pulse modulated s-band power amplifier in gallium nitride process

    Energy Technology Data Exchange (ETDEWEB)

    Sedlock, Steve [Kansas State Univ., Manhattan, KS (United States)

    2012-01-01

    The design of power amplifiers in any semi-conductor process is not a trivia exercise and it is often encountered that the simulated solution is qualitatively different than the results obtained. Phenomena such as oscillation occurring either in-band or out of band and sometimes at subharmonic intervals, continuous spectrum noticed in some frequency bands, often referred to as chaos, and jumps and hysteresis effects can all be encountered and render a design useless. All of these problems might have been identified through a more rigorous approach to stability analysis. Designing for stability is probably the one area of amplifier design that receives the least amount of attention but incurs the most catastrophic of effects if it is not performed properly. Other parameters such as gain, power output, frequency response and even matching may suitable mitigation paths. But the lack of stability in an amplifier has no mitigating path. In addition to of loss of the design completely there are the increased production cycle costs, costs involved with investigating and resolving the problem and the costs involved with schedule slips or delays resulting from it. The Linville or Rollett stability criteria that many microwave engineers follow and rely exclusively on is not sufficient by itself to ensure a stable and robust design. It will be shown that the universal belief that unconditional stability is obtained through an analysis of the scattering matrix S to determine if 1 and |{Delta}{sub S}| < 1 is only part of the procedure and other tools must be used to validate the criteria. The research shown contributes to the state of the art by developing a more thorough stability design technique for designing amplifiers of any class, whether that be current mode or switch mode, than is currently undertaken with the goal of obtaining first pass design success.

  4. Power-Efficient, High-Current-Density, Long-Life Thermionic Cathode Developed for Microwave Amplifier Applications

    Science.gov (United States)

    Wintucky, Edwin G.

    2002-01-01

    A power-efficient, miniature, easily manufactured, reservoir-type barium-dispenser thermionic cathode has been developed that offers the significant advantages of simultaneous high electron-emission current density (>2 A/sq cm) and very long life (>100,000 hr of continuous operation) when compared with the commonly used impregnated-type barium-dispenser cathodes. Important applications of this cathode are a wide variety of microwave and millimeter-wave vacuum electronic devices, where high output power and reliability (long life) are essential. We also expect it to enable the practical development of higher purveyance electron guns for lower voltage and more reliable device operation. The low cathode heater power and reduced size and mass are expected to be particularly beneficial in traveling-wave-tube amplifiers (TWTA's) for space communications, where future NASA mission requirements include smaller onboard spacecraft systems, higher data transmission rates (high frequency and output power) and greater electrical efficiency.

  5. UHF power amplifier design in 0.35μm SiGe BiCMOS

    Institute of Scientific and Technical Information of China (English)

    Song Jiayou; Li Zhiqun; Wang Zhigon

    2009-01-01

    A two-stage power amplifier operated at 925 MHz was designed and fabricated in Jazz's 0.35μm SiGe BiCMOS process. It was fully integrated excluding the inductors and the output matching network. Under a single 3.3V supply voltage, the off-chip bonding test results indicated that the circuit has a small signal gain of more than 24dB, the input and output reflectance are less than -24dB and -10dB, respectively, and the maximal output power is 23.5 dBm. At output power of 23.1 dBm, the PAE (power added efficiency) is 30.2%, the IMD2 and IMD3 are less than -32 dBc and -46 dBc, respectively. The chip size is 1.27mm×0.9mm.

  6. Hybrid master oscillator power amplifier system providing 10 mJ, 32 W, and 50 MW pulses for optical parametric chirped-pulse amplification pumping

    International Nuclear Information System (INIS)

    We present a high-energy, high-average-power picosecond laser system based on a hybrid chain in a master oscillator power amplifier configuration. The chain is seeded by a Ti:sapphire oscillator, followed by a Yb doped fiber preamplifier, a Nd:YAG-based regenerate amplifier, and a Nd:YVO4-based single-pass amplifier. The final diode-pumped, solid-state amplifier is detailed and produces pulses with more than 10 mJ energy at 32 W average power with 207 ps duration, corresponding to 50 MW peak power. The picosecond pulse output is seeded and optically synchronized with the sub-5-fs oscillator for optical parametric chirped-pulse amplification pumping. (authors)

  7. Portable Audio Design

    DEFF Research Database (Denmark)

    Groth, Sanne Krogh

    2014-01-01

    The chapter presents a methodological approach to the early process of producing portable audio design. The chapter high lights audio walks and audio guides, but can also be of inspiration when working with graphical and video production for portable devices. The final products can be presented...... within online and physical institutional contexts. The approach focuses especially on the relationship to specific sites, and how an awareness of the relationship between the site and the production can be part of the design process. Such awareness entails several approaches: the necessity of paying...

  8. 250  W average power, 100  kHz repetition rate cryogenic Yb:YAG amplifier for OPCPA pumping

    OpenAIRE

    Zapata, Luis E.; Reichert, Fabian; Hemmer, M.; Kärtner, F. X.

    2016-01-01

    A cryogenically cooled, bulk Yb:YAG, four-pass amplifier delivering up to 250Waverage power at 100 kHz repetition rate is reported. The 2.5 mJ amplified optical pulses show a sub-20 ps duration before temporal compression and a spectrum supporting a transform-limited duration of 3.6 ps. The power instabilities were measured to be

  9. Portable musical instrument amplifier

    Energy Technology Data Exchange (ETDEWEB)

    Christian, David E. (Danbury, CT)

    1990-07-24

    The present invention relates to a musical instrument amplifier which is particularly useful for electric guitars. The amplifier has a rigid body for housing both the electronic system for amplifying and processing signals from the guitar and the system's power supply. An input plug connected to and projecting from the body is electrically coupled to the signal amplifying and processing system. When the plug is inserted into an output jack for an electric guitar, the body is rigidly carried by the guitar, and the guitar is operatively connected to the electrical amplifying and signal processing system without use of a loose interconnection cable. The amplifier is provided with an output jack, into which headphones are plugged to receive amplified signals from the guitar. By eliminating the conventional interconnection cable, the amplifier of the present invention can be used by musicians with increased flexibility and greater freedom of movement.

  10. Femtosecond pulses at 50-W average power from an Yb:YAG planar waveguide amplifier seeded by an Yb:KYW oscillator.

    Science.gov (United States)

    Leburn, Christopher G; Ramírez-Corral, Cristtel Y; Thomson, Ian J; Hall, Denis R; Baker, Howard J; Reid, Derryck T

    2012-07-30

    We report the demonstration of a high-power single-side-pumped Yb:YAG planar waveguide amplifier seeded by an Yb:KYW femtosecond laser. Five passes through the amplifier yielded 700-fs pulses with average powers of 50 W at 1030 nm. A numerical simulation of the amplifier implied values for the laser transition saturation intensity, the small-signal intensity gain coefficient and the gain bandwidth of 10.0 kW cm(-2), 1.6 cm(-1), and 3.7 nm respectively, and identified gain-narrowing as the dominant pulse-shaping mechanism. PMID:23038288

  11. Time-domain simulation of power transients in Raman fibre amplifiers

    Czech Academy of Sciences Publication Activity Database

    Karásek, Miroslav; Kaňka, Jiří; Honzátko, Pavel; Peterka, Pavel

    2004-01-01

    Roč. 17, č. 2 (2004), s. 165-176. ISSN 0894-3370 R&D Projects: GA AV ČR IAA2067202; GA ČR GA102/04/0773 Institutional research plan: CEZ:AV0Z2067918 Keywords : optical communication * optical fibre amplifiers * wavelength division multiplexing Subject RIV: JA - Electronic s ; Optoelectronics, Electrical Engineering Impact factor: 0.455, year: 2004

  12. Space weather radiation effects on geostationary satellite solid-state power amplifiers

    Science.gov (United States)

    Lohmeyer, W. Q.; Cahoy, K.

    2013-08-01

    In order to understand and mitigate the effects of space weather on the performance of geostationary (GEO) communications satellites, we analyze 16 years of archived telemetry data from Inmarsat, the UK-based telecommunications company. We compare 665,112 operational hours of housekeeping telemetry from two generations of satellites, designated as Fleet A and Fleet B. Each generation experienced 13 solid-state power amplifier (SSPA) anomalies for a total of 26 anomalies from 1996 to 2012. We compare telemetry from the Inmarsat anomalies with space weather observations, including data from the OMNI2 database, Geostationary Operational Environmental Satellites, the Advanced Composition Explorer Satellite, and Los Alamos National Laboratory (LANL) GEO observations; the evolution of the sunspot number; and the Kp index. Most SSPA anomalies for Fleet A occur as solar activity declines; Fleet B has not yet experienced a full solar cycle. For both fleets, the average value of Kp remained < 2 over time periods of 2 days, 3 days, and 2 weeks around the time of anomaly, which suggests that the anomalies occurred at times of relatively quiet geomagnetic activity and that they were probably not solely caused by surface charging. From 1996 to 2009, the average of the 1.8-3.5 MeV electron flux was 1.98 #/(cm2 s st keV). Five of the 26 anomalies, unfortunately, do not have corresponding science observations (specifically, electron flux data in the LANL data set), so part of this study focuses on the 21 anomalies when science observations were available. Six out of 21 anomalies experienced a high-energy electron flux greater than 1.5 standard deviations above the mean of the log10 of the flux between 7 and 14 days prior to the anomaly. By contrast, a Monte Carlo simulation finds that on average, only 2.8 out of 21 (13%) of randomly assigned "anomalies" occur between 7 and 14 days after an electron flux greater than 1.5 standard deviations above the mean. Our observations suggest

  13. Simulation of high power broadband cyclotron autoresonance maser amplifier and electron beam experiments

    Science.gov (United States)

    Speirs, D. C.; Phelps, A. D. R.; Konoplev, I. V.; Cross, A. W.; He, W.

    2004-04-01

    The design, simulation, and preliminary experimental implementation of an efficient, broadband cyclotron autoresonance maser (CARM) amplifier operating over the 9-13 GHz frequency band is presented. The amplifier is based on a high current accelerator capable of generating a ˜35 A pencil electron beam at an accelerating voltage of ˜450 kV. A full three-dimensional numerical model of the CARM amplifier has been constructed within the particle-in-cell code KARAT taking into account electron beam parameters derived from simulation and experiment. An electron beam current of 32A at an accelerating voltage of 400 kV was measured. Numerical simulations demonstrate the possibility of obtaining 37 dB gain and an interaction efficiency of 17%. In addition a viable amplification bandwidth of 9-13 GHz is apparent, with a minimum gain and efficiency of 25 dB and 10%, respectively, at the boundaries of the amplification band. The peak modeled efficiency and gain (17%, 37 dB) were obtained at a frequency of 12 GHz. Computational simulations have also revealed correlation between the instantaneous amplification bandwidth and the spectral width of cyclotron superradiant emission within the system.

  14. Simulation of high power broadband cyclotron autoresonance maser amplifier and electron beam experiments

    International Nuclear Information System (INIS)

    The design, simulation, and preliminary experimental implementation of an efficient, broadband cyclotron autoresonance maser (CARM) amplifier operating over the 9-13 GHz frequency band is presented. The amplifier is based on a high current accelerator capable of generating a ∼35 A pencil electron beam at an accelerating voltage of ∼450 kV. A full three-dimensional numerical model of the CARM amplifier has been constructed within the particle-in-cell code KARAT taking into account electron beam parameters derived from simulation and experiment. An electron beam current of 32A at an accelerating voltage of 400 kV was measured. Numerical simulations demonstrate the possibility of obtaining 37 dB gain and an interaction efficiency of 17%. In addition a viable amplification bandwidth of 9-13 GHz is apparent, with a minimum gain and efficiency of 25 dB and 10%, respectively, at the boundaries of the amplification band. The peak modeled efficiency and gain (17%, 37 dB) were obtained at a frequency of 12 GHz. Computational simulations have also revealed correlation between the instantaneous amplification bandwidth and the spectral width of cyclotron superradiant emission within the system

  15. Theoretical and numerical treatment of modal instability in high-power core and cladding-pumped Raman fiber amplifiers.

    Science.gov (United States)

    Naderi, Shadi; Dajani, Iyad; Grosek, Jacob; Madden, Timothy

    2016-07-25

    Raman fiber lasers have been proposed as potential candidates for scaling beyond the power limitations imposed on near diffraction-limited rare-earth doped fiber lasers. One limitation is the modal instability (MI) and we explore the physics of this phenomenon in Raman fiber amplifiers (RFAs). By utilizing the conservation of number of photons and conservation of energy in the absence of loss, the 3 × 3 governing system of nonlinear equations describing the pump and the signal modal content are decoupled and solved analytically for cladding-pumped RFAs. By comparing the extracted signal at MI threshold for the same step index-fiber, it is found that the MI threshold is independent of the length of the amplifier or whether the amplifier is co-pumped or counter-pumped; dictated by the integrated heat load along the length of fiber. We extend our treatment to gain-tailored RFAs and show that this approach is of limited utility in suppressing MI. Finally, we formulate the physics of MI in core-pumped RFAs where both pump and signal interferences participate in writing the time-dependent index of refraction grating. PMID:27464110

  16. Introduction to AVS Audio

    Institute of Scientific and Technical Information of China (English)

    Hao-Jun Ai; Shui-Xian Chen; Rui-Min Hu

    2006-01-01

    This paper describes a general audio coding algorithm which has been recently standardized by AVS, China.The algorithm is based on a perceptual coding technique. The codec delivers near CD-quality audio at 128kb/s. This paper describes the coder structure in detail and discusses the reasons for specific design methods. A summary of the subjective test results are presented for the prototype codec. Comparison Mean Opinion Score (CMOS) test indicates that the quality of the AVS audio coder is comparable with MPEG Layer-3 audio coder. A real-time decoder was used for the characterization test,which is based on a 16-bit fixed-point DSP. The performance of the DSP solution was demonstrated, including computational complexity and storage characteristics.

  17. Forensic audio watermark detection

    Science.gov (United States)

    Steinebach, Martin; Zmudzinski, Sascha; Petrautzki, Dirk

    2012-03-01

    Digital audio watermarking detection is often computational complex and requires at least as much audio information as required to embed a complete watermark. In some applications, especially real-time monitoring, this is an important drawback. The reason for this is the usage of sync sequences at the beginning of the watermark, allowing a decision about the presence only if at least the sync has been found and retrieved. We propose an alternative method for detecting the presence of a watermark. Based on the knowledge of the secret key used for embedding, we create a mark for all potential marking stages and then use a sliding window to test a given audio file on the presence of statistical characteristics caused by embedding. In this way we can detect a watermark in less than 1 second of audio.

  18. Structure Learning in Audio

    OpenAIRE

    Nielsen, Andreas Brinch; Hansen, Lars Kai

    2009-01-01

    By having information about the setting a user is in, a computer is able to make decisions proactively to facilitate tasks for the user. Two approaches are taken in this thesis to achieve more information about an audio environment. One approach is that of classifying audio, and a new approach using pitch dynamics is suggested. The other approach is finding structures between the mixings of multiple sources based on an assumption of statistical independence of the sources. Three different aud...

  19. A look-up-table digital predistortion technique for high-voltage power amplifiers in ultrasonic applications.

    Science.gov (United States)

    Gao, Zheng; Gui, Ping

    2012-07-01

    In this paper, we present a digital predistortion technique to improve the linearity and power efficiency of a high-voltage class-AB power amplifier (PA) for ultrasound transmitters. The system is composed of a digital-to-analog converter (DAC), an analog-to-digital converter (ADC), and a field-programmable gate array (FPGA) in which the digital predistortion (DPD) algorithm is implemented. The DPD algorithm updates the error, which is the difference between the ideal signal and the attenuated distorted output signal, in the look-up table (LUT) memory during each cycle of a sinusoidal signal using the least-mean-square (LMS) algorithm. On the next signal cycle, the error data are used to equalize the signal with negative harmonic components to cancel the amplifier's nonlinear response. The algorithm also includes a linear interpolation method applied to the windowed sinusoidal signals for the B-mode and Doppler modes. The measurement test bench uses an arbitrary function generator as the DAC to generate the input signal, an oscilloscope as the ADC to capture the output waveform, and software to implement the DPD algorithm. The measurement results show that the proposed system is able to reduce the second-order harmonic distortion (HD2) by 20 dB and the third-order harmonic distortion (HD3) by 14.5 dB, while at the same time improving the power efficiency by 18%. PMID:22828849

  20. Multicanonical evaluation of the tails of the probability density function of semiconductor optical amplifier output power fluctuations

    DEFF Research Database (Denmark)

    Tromborg, Bjarne; Reimer, Michael; Yevick, David

    2010-01-01

    This paper presents a multicanonical Monte Carlo method for simulating the tails of a pdf distribution of the filtered output power from a semiconductor optical amplifier down to values of the order of 10−40. The influence of memory effects on the pdf is examined in order to demonstrate the manner...... in which the calculated pdf approaches the true pdf with increasing integration time. The simulated pdf is shown to be in good agreement with a second order analytic expression for the pdf....

  1. DC temperature measurements to characterize the central frequency and 3 dB bandwidth in mmW power amplifiers

    OpenAIRE

    Aragonès Cervera, Xavier; Mateo Peña, Diego; González Jiménez, José Luis; Vidal López, Eva María; Gómez Salinas, Didac; Martineau, B.; Altet Sanahujes, Josep

    2015-01-01

    This letter shows how a temperature sensor and a simple DC voltage multimeter can be used as instruments to determine the central frequency and 3 dB bandwidth of a 60 GHz linear power amplifier (PA). Compared to previous works, the DC temperature monitoring now proposed requires a much simpler and convenient measurement set-up. In this example, the temperature sensor is embedded in the same silicon die as the PA. Being placed in empty layout spaces next to it, it is proposed as a built-in tes...

  2. The design, construction, installation and testing of a boost amplifier for the vertical field power supply of JET

    International Nuclear Information System (INIS)

    The Poloidal Vertical Field Boost Amplifier (PVFB) is designed solely to assist the plasma start-up phase in JET (1-2s)). Its rating of 11kV no load, 6.0kA DC is obtained from four identical modules each consisting of dry-type transformer and air-cooled thyristor rectifiers mounted in high voltage decks. The paper will review the system design of the power supply, the layout of control and protection, the firing generation and monitoring as well as the thyristor failure detection. Finally, the paper will review the factory tests performed on the equipment. (author). 1 ref.; 10 figs

  3. The design, construction, installation and testing of a boost amplifier for the vertical field power supply of Jet

    International Nuclear Information System (INIS)

    The Poloidal Vertical Field Boost Amplifier (PVFB) is designed solely to assist the plasma start-up phase in JET (1-2s). Its rating of 11kV no load, 6.0kA DC is obtained from four identical modules each consisting of dry-type transformer and air-cooled thyristor rectifiers mounted in high voltage decks. The paper will review the system design of the power supply, the layout of control and protection, the firing generation and monitoring as well as the thyristor failure detection. Finally, the paper will review the factory tests performed on the equipment

  4. High-Power Hybrid Mode-Locked External Cavity Semiconductor Laser Using Tapered Amplifier with Large Tunability

    Directory of Open Access Journals (Sweden)

    Andreas Schmitt-Sody

    2008-01-01

    Full Text Available We report on hybrid mode-locked laser operation of a tapered semiconductor amplifier in an external ring cavity, generating pulses as short as 0.5 ps at 88.1 MHz with an average power of 60 mW. The mode locking is achieved through a combination of a multiple quantum well saturable absorber (>10% modulation depth and an RF current modulation. This designed laser has 20 nm tuning bandwidth in continuous wave and 10 nm tuning bandwidth in mode locking around 786 nm center wavelength at constant temperature.

  5. A RF-MEMS Based Tunable Matching Network for 2.45-GHz Discrete-Resizing CMOS Power Amplifiers

    Directory of Open Access Journals (Sweden)

    F. Alimenti

    2014-04-01

    Full Text Available This paper deals with the design and experimental validation of a tunable matching network for discrete-resizing CMOS power amplifiers operating at 2.45 GHz (i.e. in the WiFi frequency band. The network is based on a two stages ladder configuration and exploits high-Q MEMS capacitors to achieve the impedance tuning. Furthermore, since these capacitors can be programmed through a 3-wires serial interface, a fully digital control of the transformed impedance is achieved.

  6. In-situ optical phase distortion measurement of Yb:YAG thin disk in high average power regenerative amplifier

    Science.gov (United States)

    Miura, Taisuke; Chyla, Michal; Smrž, Martin; Nagisetty, Siva Sankar; Severová, Patricie; Novák, Ondřej; Endo, Akira; Mocek, TomáÅ.¡

    2013-02-01

    We are developing one kilohertz picosecond Yb:YAG thin disk regenerative amplifier with 500-W average power for medical and industrial applications. In case of high energy pulse amplification, a large area mode matching in gain media, which is drastically degenerated by the optical phase distortion, is required to avoid optical damage. We designed in-situ thin disk deformation measurement based on the combination of a precise wavefront sensor and a single mode probe beam. In contrast to a conventional interferometric measurement, this measurement is compact, easy-to-align, and is less affected by mechanical vibrations.

  7. 250  W average power, 100  kHz repetition rate cryogenic Yb:YAG amplifier for OPCPA pumping.

    Science.gov (United States)

    Zapata, L E; Reichert, F; Hemmer, M; Kärtner, F X

    2016-02-01

    A cryogenically cooled, bulk Yb:YAG, four-pass amplifier delivering up to 250 W average power at 100 kHz repetition rate is reported. The 2.5 mJ amplified optical pulses show a sub-20 ps duration before temporal compression and a spectrum supporting a transform-limited duration of 3.6 ps. The power instabilities were measured to be <0.5% rms over 30 min at full power, and the spatial intensity profile showed a flat-top distribution and near diffraction-limited beam quality. This compact amplifier is an ideal source for pumping either near-IR or mid-IR optical parametric chirped pulse amplifiers. PMID:26907405

  8. IOT based RF power systems as an alternative to klystron amplifier in Indus-2 at the rate 505.812 MHz

    International Nuclear Information System (INIS)

    Due to non-availability of replacement Klystron tube in Indus-2, an IOT based high power RF amplifier system is realized. It is based on E2V make 80 kW IOTD2130 tube with its circuit assembly IMD2000ST. This amplifier system is easily available commercially due to its application in DTV broadcast. It has inherent advantages over klystron amplifier viz. high efficiency (η), less phase and amplitude sensitivity to HV ripple, higher linearity, compactness and less cooling requirement. This high power IOT amplifier is tested with its required control system, cooling system, electron gun auxiliary supplies, beam supply and focusing supply. The nominal beam voltage for this IOT is -36 kV however amplifier was tested successfully with indigenously developed -32 kV, crowbar less power supply. The optimum load impedance for IOT beam was calculated for this bias voltage ( 32kV). For the required load impedance, coupling coefficient (β) of output coupler to the O/P cavity was estimated and accordingly loop angle was adjusted. The amplifier has been tested up to 50 kW with amplifier efficiency 60% and gain 23 dB at - 32 kV beam voltage. (author)

  9. Application and modeling of GaN FET in 1MHz large signal bandwidth power supply for radio frequency power amplifier

    OpenAIRE

    Cucak, Dejana; Vasic, Miroslav; García Suárez, Oscar; Oliver Ramírez, Jesús Angel; Alou Cervera, Pedro; Cobos Márquez, José Antonio; Tadjer, Marko Jak; Calle Gómez, Fernando; Benkhelifa, F.; R Reiner; Waltereit, P.; Müller, S.

    2013-01-01

    In this paper, implementation and testing of non- commercial GaN HEMT in a simple buck converter for envelope amplifier in ET and EER transmission techn iques has been done. Comparing to the prototypes with commercially available EPC1014 and 1015 GaN HEMTs, experimentally demonstrated power supply provided better thermal management and increased the switching frequency up to 25MHz. 64QAM signal with 1MHz of large signal bandw idth and 10.5dB of Peak to Average Power Ratio was g...

  10. How to gain gain a reference book on triodes in audio pre-amps

    CERN Document Server

    Vogel, Burkhard

    2008-01-01

    This book gives a detailed insight into the most common gain producing and constant current generating possibilities (28) of triodes for audio pre-amplifier purposes. It shows how to calculate first and spend money for expensive components later.

  11. Generation of 130 W narrow-linewidth high-peak-power picosecond pulses directly from a compact Yb-doped single-stage fiber amplifier

    Science.gov (United States)

    Qi, Yaoyao; Yu, Haijuan; Zhang, Jingyuan; Wang, Lei; Zhang, Ling; Lin, Xuechun

    2015-09-01

    We report a compact, 130-W single-stage master oscillator power amplifier with a high peak power of 51.3 kW and a narrow spectral linewidth of 0.1 nm. The seed source is a single-mode, passively mode-locked solid-state laser at 1064 nm with an average power of 2 W. At a repetition rate of 73.5 MHz, the pulse duration is 30 ps. After amplification, it stretches to 34.5 ps. The experiment enables the optical-to-optical conversion efficiency to reach 75%. To the best of our knowledge, this is the first report of such a high-power, narrow spectral linewidth, high peak power picosecond-pulse fiber amplifier based on a continuous-wave, mode-locked solid-state seeding laser. No amplified spontaneous emission and stimulated Raman scattering were observed when the pump was increased.

  12. High-power SiC MESFET using a dual p-buffer layer for an S-band power amplifier

    Institute of Scientific and Technical Information of China (English)

    Deng Xiao-Chuan; Sun He; Rao Cheng-Yuan; Zhang Bo

    2013-01-01

    A silicon carbide (SiC) based metal semiconductor field effect transistor (MESFET) is fabricated by using a standard SiC MESFET structure with the application of a dual p-buffer layer and a multi-recessed gate to the process for an S-band power amplifier.The lower doped upper-buffer layer serves to maintain the channel current,while the higher doped lowerbuffer layer is used to provide excellent electron confinement in the channel layer.A 20-mm gate periphery SiC MESFET biased at a drain voltage of 85 V demonstrates a pulsed wave saturated output power of 94 W,a linear gain of 11.7 dB,and a maximum power added efficiency of 24.3% at 3.4 GHz.These results are improved compared with those of the conventional single p-buffer MESFET fabricated in this work using the same process.A radio-frequency power output greater than 4.7 W/mm is achieved,showing the potential as a high-voltage operation device for high-power solid-state amplifier applications.

  13. High-power SiC MESFET using a dual p-buffer layer for an S-band power amplifier

    Science.gov (United States)

    Deng, Xiao-Chuan; Sun, He; Rao, Cheng-Yuan; Zhang, Bo

    2013-01-01

    A silicon carbide (SiC) based metal semiconductor field effect transistor (MESFET) is fabricated by using a standard SiC MESFET structure with the application of a dual p-buffer layer and a multi-recessed gate to the process for an S-band power amplifier. The lower doped upper-buffer layer serves to maintain the channel current, while the higher doped lower-buffer layer is used to provide excellent electron confinement in the channel layer. A 20-mm gate periphery SiC MESFET biased at a drain voltage of 85 V demonstrates a pulsed wave saturated output power of 94 W, a linear gain of 11.7 dB, and a maximum power added efficiency of 24.3% at 3.4 GHz. These results are improved compared with those of the conventional single p-buffer MESFET fabricated in this work using the same process. A radio-frequency power output greater than 4.7 W/mm is achieved, showing the potential as a high-voltage operation device for high-power solid-state amplifier applications.

  14. High-power SiC MESFET using a dual p-buffer layer for an S-band power amplifier

    International Nuclear Information System (INIS)

    A silicon carbide (SiC) based metal semiconductor field effect transistor (MESFET) is fabricated by using a standard SiC MESFET structure with the application of a dual p-buffer layer and a multi-recessed gate to the process for an S-band power amplifier. The lower doped upper-buffer layer serves to maintain the channel current, while the higher doped lower-buffer layer is used to provide excellent electron confinement in the channel layer. A 20-mm gate periphery SiC MESFET biased at a drain voltage of 85 V demonstrates a pulsed wave saturated output power of 94 W, a linear gain of 11.7 dB, and a maximum power added efficiency of 24.3% at 3.4 GHz. These results are improved compared with those of the conventional single p-buffer MESFET fabricated in this work using the same process. A radio-frequency power output greater than 4.7 W/mm is achieved, showing the potential as a high-voltage operation device for high-power solid-state amplifier applications. (condensed matter: electronic structure, electrical, magnetic, and optical properties)

  15. Nonlinear instabilities induced by the F coil power amplifier at FTU: Modeling and control

    International Nuclear Information System (INIS)

    In this paper we focus on the instabilities caused by the nonlinear behavior of the F coil current amplifier at FTU. This behavior induces closed-loop instability of the horizontal position stabilizing loop whenever the requested current is below the circulating current level. In the paper we first illustrate a modeling phase where nonlinear dynamics are derived and identified to reproduce the open-loop responses measured by the F coil current amplifier. The derived model is shown to successfully reproduce the experimental behavior by direct comparison with experimental data. Based on this dynamic model, we then reproduce the closed-loop scenario of the experiment and show that the proposed nonlinear model successfully reproduces the nonlinear instabilities experienced in the experimental sessions. Given the simulation setup, we next propose a nonlinear control solution to this instability problem. The proposed solution is shown to recover stability in closed-loop simulations. Experimental tests are scheduled for the next experimental campaign after the FTU restart.

  16. High power fiber amplifier with adjustable repetition rate for use in all-fiber supercontinuum light sources

    Science.gov (United States)

    Baselt, T.; Taudt, Ch.; Hartmann, P.

    2014-03-01

    In recent years the use of supercontinuum light sources has encouraged the development of various optical measurement techniques, like microscopy and optical coherence-tomography. Some disadvantages of common supercontinuum solutions, in particular the rather poor stability and the absence of modulation abilities limit the application potential of this technique. We present a directly controllable all-fiber laser source with appropriate parameters in order to generate a broad supercontinuum spectrum with the aid of microstructured fibers. Through the application of a laser seed-diode, which is driven by a custom built controller to generate nanosecond pulses with repetition rates in the MHz range in a reproducible manner, a direct control of the laser system is enabled. The seedsignal is amplified to the appropriate power level in a 2-step amplification stage. Wide supercontinuum is finally generated by launching the amplified laser pulses into different microstructured fibers. The system has been optimized in terms of stability, power-output, spectral width and beam-quality by employing different laser pulse parameters and several different microstructured fibers. Finally, the system as a whole has been characterized in reference to common solid state-laser-based supercontinuum light sources

  17. A compact diode-pumped pulsed Nd:YAG slab laser based on a master oscillator power amplifier configuration

    Science.gov (United States)

    Maleki, A.; Kavosh Tehrani, M.; Saghafifar, H.; Moghtader Dindarlu, M. H.; Ebadian, H.

    2016-02-01

    In this paper, the design and construction of a pulsed Nd:YAG laser is described. The structure of this laser is based on a master oscillator power amplifier system. A master oscillator is an electro-optical Q-switched Nd:YAG rod laser. Face-pumping is used for the excitation of the slab structure, and a double-pass method is designed for the amplification stages. Two Nd:YAG zigzag slabs are utilized as power amplification stages in this laser. The laser diodes are stacked in a compact configuration and are used for rod and slabs pumping. The total pump energy in the amplifier stages is 3200 mJ at 808 nm. The output pulse energy achieved at 1064 nm is about 850 mJ of 10 ns pulse duration corresponding to 26.5% optical-to-optical conversion efficiency. Moreover, this laser can generate pulse energies around 430 mJ at 532 nm. The dependence of the output energy of MOPA and second harmonic generation operations on different pulse repetition rates (PRRs) from 1 to 100 Hz has been investigated. Experimental results show that the maximum fluctuations of the output energies are about 2.5 and 4% for 1064 and 532 nm, respectively.

  18. Megawatt-level peak-power from a passively Q-switched hybrid fiber-bulk amplifier and its applications

    Science.gov (United States)

    Reiser, Axel; Bdzoch, Juraj; Höfer, Sven; Scholz-Riecke, Sina; Seitz, Daniel; Kugler, Nicolas; Genter, Peter

    2016-03-01

    A novel laser system with optical parameters that fill the gap between Q-switched and modelocked lasers has been developed. It consists of a high gain hybrid fiber-bulk amplifier seeded by a low power SESAM Q-switched oscillator. The mW level output power of the seed oscillator is preamplified by a single mode fiber which is limited by SRS effects. The final amplification stage is realized by a longitudinal pumped Nd:YVO4 crystal in a double pass setup. This MOPA configuration delivers sub-300ps pulses at repetition rates up to 1 MHz with an output power exceeding 60W. Nonlinear frequency conversion to 532nm and 355nm is achieved with efficiencies of >75% and >45%, respectively. Due to the high peak power, high repetition rate and high beam quality of this system, applications formerly only addressable at lower pulse repetition frequencies or with complex modelocked laser systems are now possible with high speed and lower cost of ownership. Application results that take benefit from these new laser parameters will be shown. Furthermore, the reduction of the pulse duration to sub-100ps and power scaling to output powers <100W by the use of the Innoslab concept are being presented.

  19. Frequency Response Of Series And Parallel Combination Of Two Single Feedback Class D Amplifier

    OpenAIRE

    R. Sivarajan; K. R. Padmavathy; A.kasthoory; N. Santha; S. Subashri

    2015-01-01

    Amplifier is generally used to increase the amplitude of the signal. Consider the audio signal, if the amplitude of the audio signal is increased, then automatically loudness of the signal is increased. Class D Amplifier (CDA) consists of integrator, PWM modulator and output stage. This system can be defined as a open loop CDA system. The main factor to be considered for any amplifier circuit is the gain which is obtained by frequency response. To improve the gain of the amplifier, ...

  20. Unique mechanization to fault isolate failures of an electron tube Radio Frequency (RF) amplifier and its high voltage power supply

    Science.gov (United States)

    Miller, D. G.

    1986-03-01

    An electronics circuit for improving the fault isolation of failures between an electron tube radio frequency (RF) amplifier and its high voltage power supply is disclosed. High voltage power supplies control their output voltage by comparing a feedback voltage against a reference. This comparison is used to develop an error voltage which, in turn, drives a pulsewidth modulator that corrects the feedback voltage to the reference. The output of a digital-to-analog converter (DAC) is used as the reference voltage. The DAC is driven by a counter which would count to the correct reference voltage represented by a specific count. The final count is determined by a comparator which compares the counter output to the desired final counter and stops the counter when it is reached.