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Sample records for atomic mott insulator

  1. Compressibility of a fermionic mott insulator of ultracold atoms.

    Science.gov (United States)

    Duarte, Pedro M; Hart, Russell A; Yang, Tsung-Lin; Liu, Xinxing; Paiva, Thereza; Khatami, Ehsan; Scalettar, Richard T; Trivedi, Nandini; Hulet, Randall G

    2015-02-20

    We characterize the Mott insulating regime of a repulsively interacting Fermi gas of ultracold atoms in a three-dimensional optical lattice. We use in situ imaging to extract the central density of the gas and to determine its local compressibility. For intermediate to strong interactions, we observe the emergence of a plateau in the density as a function of atom number, and a reduction of the compressibility at a density of one atom per site, indicating the formation of a Mott insulator. Comparisons to state-of-the-art numerical simulations of the Hubbard model over a wide range of interactions reveal that the temperature of the gas is of the order of, or below, the tunneling energy scale. Our results hold great promise for the exploration of many-body phenomena with ultracold atoms, where the local compressibility can be a useful tool to detect signatures of different phases or phase boundaries at specific values of the filling.

  2. Single-spin addressing in an atomic Mott insulator

    DEFF Research Database (Denmark)

    Weitenberg, Christof; Endres, Manuel; Sherson, Jacob

    2011-01-01

    and quantum spin dynamics. Here we demonstrate how such control can be implemented at the most fundamental level of a single spin at a specific site of an optical lattice. Using a tightly focused laser beam together with a microwave field, we were able to flip the spin of individual atoms in a Mott insulator......, the implementation of novel cooling schemes, and the engineering of quantum many-body phases and various quantum information processing applications....

  3. Imaging the Mott Insulator Shells using Atomic Clock Shifts

    OpenAIRE

    Campbell, Gretchen K.; Mun, Jongchul; Boyd, Micah; Medley, Patrick; Leanhardt, Aaron E.; Marcassa, Luis; Pritchard, David E.; Ketterle, Wolfgang

    2006-01-01

    Microwave spectroscopy was used to probe the superfluid-Mott Insulator transition of a Bose-Einstein condensate in a 3D optical lattice. Using density dependent transition frequency shifts we were able to spectroscopically distinguish sites with different occupation numbers, and to directly image sites with occupation number n=1 to n=5 revealing the shell structure of the Mott Insulator phase. We use this spectroscopy to determine the onsite interaction and lifetime for individual shells.

  4. Single-atom-resolved fluorescence imaging of an atomic Mott insulator

    DEFF Research Database (Denmark)

    Sherson, Jacob; Weitenberg, Christof; Andres, Manuel

    2010-01-01

    in situ images of a quantum fluid in which each underlying quantum particle is detected. Here we report fluorescence imaging of strongly interacting bosonic Mott insulators in an optical lattice with single-atom and single-site resolution. From our images, we fully reconstruct the atom distribution......The reliable detection of single quantum particles has revolutionized the field of quantum optics and quantum information processing. For several years, researchers have aspired to extend such detection possibilities to larger-scale, strongly correlated quantum systems 1 , 2 in order to record...

  5. On Effective Holographic Mott Insulators

    CERN Document Server

    Baggioli, Matteo

    2016-01-01

    We present a class of holographic models that behave effectively as prototypes of Mott insulators, materials where electron-electron interactions dominate transport phenomena. The main ingredient in the gravity dual is that the gauge-field dynamics contains self-interactions by way of a particular type of non-linear electrodynamics. The electrical response in these models exhibits typical features of Mott-like states: i) the low-temperature DC conductivity is unboundedly low; ii) metal-insulator transitions appear by varying various parameters; iii) for large enough self-interaction strength, the conductivity can even decrease with increasing doping (density of carriers), which appears as a sharp manifestation of `traffic-jam'-like behaviour; iv) the insulating state becomes very unstable towards superconductivity at large enough doping. We exhibit some of the properties of the resulting insulator-superconductor transition, which is sensitive to the amount of disorder in a specific way. These models imply a c...

  6. Holographic Mott-like insulator

    CERN Document Server

    Ling, Yi; Wu, Jian-Pin

    2015-01-01

    In this paper we show that a gravity dual model with Q-lattice structure can provide a holographic description of a Mott-like insulator, which is an extension of our previous work in arXiv:1507.02514. We construct the bulk geometry with two gauge fields and introduce a coupling between the lattice and the Maxwell field. It turns out that an insulating ground state with hard gap as well as vanishing DC conductivity can be achieved in the zero temperature limit, which can be viewed as a substantial progress towards the holographic construction of Mott-like insulator. The non-Drude behavior in optical conductivity is also discussed.

  7. On effective holographic Mott insulators

    Science.gov (United States)

    Baggioli, Matteo; Pujolàs, Oriol

    2016-12-01

    We present a class of holographic models that behave effectively as prototypes of Mott insulators — materials where electron-electron interactions dominate transport phenomena. The main ingredient in the gravity dual is that the gauge-field dynamics contains self-interactions by way of a particular type of non-linear electrodynamics. The electrical response in these models exhibits typical features of Mott-like states: i) the low-temperature DC conductivity is unboundedly low; ii) metal-insulator transitions appear by varying various parameters; iii) for large enough self-interaction strength, the conductivity can even decrease with increasing doping (density of carriers) — which appears as a sharp manifestation of `traffic-jam'-like behaviour; iv) the insulating state becomes very unstable towards superconductivity at large enough doping. We exhibit some of the properties of the resulting insulator-superconductor transition, which is sensitive to the momentum dissipation rate in a specific way. These models imply a clear and generic correlation between Mott behaviour and significant effects in the nonlinear electrical response. We compute the nonlinear current-voltage curve in our model and find that indeed at large voltage the conductivity is largely reduced.

  8. Excitation Spectrum of Spin-1 Bosonic Atoms in Mott Insulating Phase

    Institute of Scientific and Technical Information of China (English)

    HOU Jing-Min; TIAN Li-Jun

    2006-01-01

    The effective action for spin-1 bosonic atom in an optical lattice is derived. The quasiparticle and quasihole dispersions are calculated for different cases by using a functional integral formalism. For all cases, the excitation spectra are analyzed. All the quasiparticle and quasihole excitations start with a gap.

  9. Interfaces in coexisting metals and Mott insulators

    Science.gov (United States)

    Lee, Juho; Yee, Chuck-Hou

    2017-05-01

    Motivated by the direct observation of electronic phase separation in first-order Mott transitions, we model the interface between thermodynamically coexisting metals and Mott insulators. We show how to model the required slab geometry and extract the electronic spectra. We construct an effective Landau free energy and compute the variation of its parameters across the phase diagram. Finally, using a linear mixture of the density and double occupancy, we identify a natural Ising order parameter which unifies the treatment of the bandwidth and filling controlled Mott transitions.

  10. Expansion of Bose-Hubbard Mott insulators in optical lattices

    Energy Technology Data Exchange (ETDEWEB)

    Jreissaty, Mark; Carrasquilla, Juan; Rigol, Marcos [Department of Physics, Georgetown University, Washington DC 20057 (United States); Wolf, F. Alexander [Department of Physics, Georgetown University, Washington DC 20057 (United States); Theoretical Physics III, Center for Electronic Correlations and Magnetism, Institute of Physics, Augsburg University, D-86135 Augsburg (Germany)

    2011-10-15

    We study the expansion of bosonic Mott insulators in the presence of an optical lattice after switching off a confining potential. We use the Gutzwiller mean-field approximation and consider two different setups. In the first one, the expansion is restricted to one direction. We show that this leads to the emergence of two condensates with well-defined momenta, and argue that such a construct can be used to create atom lasers in optical lattices. In the second setup, we study Mott insulators that are allowed to expand in all directions in the lattice. In this case, a simple condensate is seen to develop within the mean-field approximation. However, its constituent bosons are found to populate many nonzero momentum modes. An analytic understanding of both phenomena in terms of the exact dispersion relation in the hard-core limit is presented.

  11. Ferroelectric control of a Mott insulator.

    Science.gov (United States)

    Yamada, Hiroyuki; Marinova, Maya; Altuntas, Philippe; Crassous, Arnaud; Bégon-Lours, Laura; Fusil, Stéphane; Jacquet, Eric; Garcia, Vincent; Bouzehouane, Karim; Gloter, Alexandre; Villegas, Javier E; Barthélémy, Agnès; Bibes, Manuel

    2013-10-03

    The electric field control of functional properties is an important goal in oxide-based electronics. To endow devices with memory, ferroelectric gating is interesting, but usually weak compared to volatile electrolyte gating. Here, we report a very large ferroelectric field-effect in perovskite heterostructures combining the Mott insulator CaMnO3 and the ferroelectric BiFeO3 in its "supertetragonal" phase. Upon polarization reversal of the BiFeO3 gate, the CaMnO3 channel resistance shows a fourfold variation around room temperature, and a tenfold change at ~200 K. This is accompanied by a carrier density modulation exceeding one order of magnitude. We have analyzed the results for various CaMnO3 thicknesses and explain them by the electrostatic doping of the CaMnO3 layer and the presence of a fixed dipole at the CaMnO3/BiFeO3 interface. Our results suggest the relevance of ferroelectric gates to control orbital- or spin-ordered phases, ubiquitous in Mott systems, and pave the way toward efficient Mott-tronics devices.

  12. Quench from Mott Insulator to Superfluid

    Energy Technology Data Exchange (ETDEWEB)

    Zurek, Wojciech H. [Los Alamos National Laboratory; Dziarmaga, Jacek [Instytut Fizyki Uniwersytetu Jagiello´nskiego; Tylutki, Marek [Instytut Fizyki Uniwersytetu Jagiello´nskiego

    2012-06-01

    We study a linear ramp of the nearest-neighbor tunneling rate in the Bose-Hubbard model driving the system from the Mott insulator state into the superfluid phase. We employ the truncated Wigner approximation to simulate linear quenches of a uniform system in 1...3 dimensions, and in a harmonic trap in 3 dimensions. In all these setups the excitation energy decays like one over third root of the quench time. The -1/3 scaling is explained by an impulse-adiabatic approximation - a variant of the Kibble-Zurek mechanism - describing a crossover from non-adiabatic to adiabatic evolution when the system begins to keep pace with the increasing tunneling rate.

  13. Gossamer superconductivity near antiferromagnetic Mott insulator in layered organic conductors.

    Science.gov (United States)

    Gan, J Y; Chen, Yan; Su, Z B; Zhang, F C

    2005-02-18

    Layered organic superconductors are on the verge of the Mott insulator. We use the Gutzwiller variational method to study a two-dimensional Hubbard model including a spin exchange coupling term as a minimal model for the compounds. The ground state is found to be a Gossamer superconductor at small on-site Coulomb repulsion U and an antiferromagnetic Mott insulator at large U, separated by a first order phase transition. Our theory is qualitatively consistent with major experiments reported in organic superconductors.

  14. Josephson physics mediated by the Mott insulating phase

    OpenAIRE

    Vishveshwara, Smitha; Lannert, Courtney

    2008-01-01

    We investigate the static and dynamic properties of bosonic lattice systems in which condensed and Mott insulating phases co-exist due to the presence of a spatially-varying potential. We formulate a description of these inhomogeneous systems and calculate the bulk energy at and near equilibrium. We derive the explicit form of the Josephson coupling between disjoint superfluid regions separated by Mott insulating regions. We obtain detailed estimates for the experimentally-realized case of al...

  15. Thermally assisted ordering in Mott insulators

    Science.gov (United States)

    Sims, Hunter; Pavarini, Eva; Koch, Erik

    2017-08-01

    Landau theory describes phase transitions as the competition between energy and entropy: The ordered phase has lower energy, while the disordered phase has larger entropy. When heating the system, ordering is reduced entropically until it vanishes at the critical temperature. This picture implicitly assumes that the energy difference between the ordered and disordered phases does not change with temperature. We show that for orbital ordering in the Mott insulator KCuF3, this assumption fails qualitatively: entropy plays a negligible role, while thermal expansion energetically stabilizes the orbitally ordered phase to such an extent that no phase transition is observed. To understand this strong dependence on the lattice constant, we need to take into account the Born-Mayer repulsion between the ions. It is the latter, and not the Jahn-Teller elastic energy, which determines the magnitude of the distortion. This effect will be seen in all materials where the distortion expected from the Jahn-Teller mechanism is so large that the ions would touch. Our mechanism explains not only the absence of a phase transition in KCuF3, but even suggests the possibility of an inverted transition in closed-shell systems, where the ordered phase emerges only at high temperatures.

  16. A Mott insulator continuously connected to iron pnictide superconductors

    Science.gov (United States)

    Song, Yu; Yamani, Zahra; Cao, Chongde; Li, Yu; Zhang, Chenglin; Chen, Justin S.; Huang, Qingzhen; Wu, Hui; Tao, Jing; Zhu, Yimei; Tian, Wei; Chi, Songxue; Cao, Huibo; Huang, Yao-Bo; Dantz, Marcus; Schmitt, Thorsten; Yu, Rong; Nevidomskyy, Andriy H.; Morosan, Emilia; Si, Qimiao; Dai, Pengcheng

    2016-12-01

    Iron-based superconductivity develops near an antiferromagnetic order and out of a bad-metal normal state, which has been interpreted as originating from a proximate Mott transition. Whether an actual Mott insulator can be realized in the phase diagram of the iron pnictides remains an open question. Here we use transport, transmission electron microscopy, X-ray absorption spectroscopy, resonant inelastic X-ray scattering and neutron scattering to demonstrate that NaFe1-xCuxAs near x~0.5 exhibits real space Fe and Cu ordering, and are antiferromagnetic insulators with the insulating behaviour persisting above the Néel temperature, indicative of a Mott insulator. On decreasing x from 0.5, the antiferromagnetic-ordered moment continuously decreases, yielding to superconductivity ~x=0.05. Our discovery of a Mott-insulating state in NaFe1-xCuxAs thus makes it the only known Fe-based material, in which superconductivity can be smoothly connected to the Mott-insulating state, highlighting the important role of electron correlations in the high-Tc superconductivity.

  17. A Mott insulator continuously connected to iron pnictide superconductors.

    Science.gov (United States)

    Song, Yu; Yamani, Zahra; Cao, Chongde; Li, Yu; Zhang, Chenglin; Chen, Justin S; Huang, Qingzhen; Wu, Hui; Tao, Jing; Zhu, Yimei; Tian, Wei; Chi, Songxue; Cao, Huibo; Huang, Yao-Bo; Dantz, Marcus; Schmitt, Thorsten; Yu, Rong; Nevidomskyy, Andriy H; Morosan, Emilia; Si, Qimiao; Dai, Pengcheng

    2016-12-19

    Iron-based superconductivity develops near an antiferromagnetic order and out of a bad-metal normal state, which has been interpreted as originating from a proximate Mott transition. Whether an actual Mott insulator can be realized in the phase diagram of the iron pnictides remains an open question. Here we use transport, transmission electron microscopy, X-ray absorption spectroscopy, resonant inelastic X-ray scattering and neutron scattering to demonstrate that NaFe1-xCuxAs near x≈0.5 exhibits real space Fe and Cu ordering, and are antiferromagnetic insulators with the insulating behaviour persisting above the Néel temperature, indicative of a Mott insulator. On decreasing x from 0.5, the antiferromagnetic-ordered moment continuously decreases, yielding to superconductivity ∼x=0.05. Our discovery of a Mott-insulating state in NaFe1-xCuxAs thus makes it the only known Fe-based material, in which superconductivity can be smoothly connected to the Mott-insulating state, highlighting the important role of electron correlations in the high-Tc superconductivity.

  18. Geometry-induced phase transition from a bosonic superfluid to a Mott insulator

    Science.gov (United States)

    Barter, Thomas; Thomas, Claire; Leung, Tsz Him; Okano, Masayuki; Stamper-Kurn, Dan

    2016-05-01

    We describe a preliminary characterization of the superfluid and Mott insulating phases of ultracold Rb 87 bosonic atoms in a two-dimensional optical superlattice with tunable lattice geometry. By smoothly changing the lattice structure from the triangular to kagome geometries while maintaining near-constant tunneling and interaction energies, we observe a geometry-induced phase transition from the superfluid to the Mott-insulating state. We characterize the superfluid by measurements of the coherent population fraction in time of flight, and find that the superfluid is less robust in the kagome geometry than in the triangular lattice, owing to the lower its lower coordination number.

  19. Metal-insulator transition: the Mott criterion and coherence length

    CERN Document Server

    Pergament, A

    2003-01-01

    On the basis of the Mott criterion for metal-insulator transition (MIT), an expression for the correlation length, identical to that for the coherence length in the theory of superconductivity, is obtained. This correlation length characterizes the size of an electron-hole pair (in an excitonic insulator) or the effective Bohr radius (as, e.g., in doped semiconductors). The relation obtained is used for calculation of the coherence length in vanadium dioxide. The presence of two characteristic coherence lengths (xi sub 1 approx 20 A and xi sub 2 approx 2 A) is found. This is associated with the specific features of the transition mechanism in VO sub 2 : this mechanism represents a combination of the purely electronic Mott-Hubbard contribution and the structural (Peierls-like) one. It is shown, however, that the driving force of the MIT in VO sub 2 is the electron-correlation Mott-Hubbard transition.

  20. Insulating phases of vanadium dioxide are Mott-Hubbard insulators

    Science.gov (United States)

    Huffman, T. J.; Hendriks, C.; Walter, E. J.; Yoon, Joonseok; Ju, Honglyoul; Smith, R.; Carr, G. L.; Krakauer, H.; Qazilbash, M. M.

    2017-02-01

    We present comprehensive broadband optical spectroscopy data on two insulating phases of vanadium dioxide (V O2 ): monoclinic M2 and triclinic. The main result of our work is that the energy gap and the electronic structure are essentially unaltered by the first-order structural phase transition between the M2 and triclinic phases. Moreover, the optical interband features in the M2 and triclinic phases are remarkably similar to those observed in the well-studied monoclinic M1 insulating phase of V O2 . As the energy gap is insensitive to the different lattice structures of the three insulating phases, we rule out vanadium-vanadium pairing (the Peierls component) as the dominant contributor to the opening of the gap. Rather, the energy gap arises primarily from intra-atomic Coulomb correlations.

  1. Multi-band spectroscopy of inhomogeneous Mott-insulator states of ultracold bosons

    Energy Technology Data Exchange (ETDEWEB)

    Clement, D; Fabbri, N; Fallani, L; Fort, C; Inguscio, M [LENS, Dipartimento di Fisica, Universita di Firenze and INFM-CNR, via Nello Carrara 1, I-50019 Sesto Fiorentino (Finland) (Italy)], E-mail: clement@lens.unifi.it

    2009-10-15

    In this work, we use inelastic scattering of light to study the response of inhomogeneous Mott-insulator gases to external excitations. The experimental setup and procedure to probe the atomic Mott states are presented in detail. We discuss the link between the energy absorbed by the gases and accessible experimental parameters as well as the linearity of the response to the scattering of light. We investigate the excitations of the system in multiple energy bands and a band-mapping technique allows us to identify band and momentum of the excited atoms. In addition, the momentum distribution in the Mott states that is spread over the entire first Brillouin zone enables us to reconstruct the dispersion relation in the high energy bands using a single Bragg excitation with a fixed momentum transfer.

  2. Nonlocal Parity Order in the Two-Dimensional Mott Insulator

    Science.gov (United States)

    Fazzini, Serena; Becca, Federico; Montorsi, Arianna

    2017-04-01

    The Mott insulator is characterized by having small deviations around the (integer) average particle density n , with pairs with n -1 and n +1 particles forming bound states. In one dimension, the effect is captured by a nonzero value of a nonlocal "string" of parities, which instead vanishes in the superfluid phase where density fluctuations are large. Here, we investigate the interaction induced transition from the superfluid to the Mott insulator, in the paradigmatic Bose Hubbard model at n =1 . By means of quantum Monte Carlo simulations and finite size scaling analysis on L ×M ladders, we explore the behavior of "brane" parity operators from one dimension (i.e., M =1 and L →∞ ) to two dimensions (i.e., M →∞ and L →∞ ). We confirm the conjecture that, adopting a standard definition, their average value decays to zero in two dimensions also in the insulating phase, evaluating the scaling factor of the "perimeter law" [S. P. Rath et al., Ann. Phys. (Berlin) 334, 256 (2013), 10.1016/j.aop.2013.04.006]. Upon introducing a further phase in the brane parity, we show that its expectation value becomes nonzero in the insulator, while still vanishing at the transition to the superfluid phase. These quantities are directly accessible to experimental measures, thus providing an insightful signature of the Mott insulator.

  3. Mott-Kondo insulator behavior in the iron oxychalcogenides

    Science.gov (United States)

    Freelon, B.; Liu, Yu Hao; Chen, Jeng-Lung; Craco, L.; Laad, M. S.; Leoni, S.; Chen, Jiaqi; Tao, Li; Wang, Hangdong; Flauca, R.; Yamani, Z.; Fang, Minghu; Chang, Chinglin; Guo, J.-H.; Hussain, Z.

    2015-10-01

    We perform a combined experimental-theoretical study of the Fe-oxychalcogenides (FeO C h ) series La2O2Fe2O M2 (M =S , Se), which are among the latest Fe-based materials with the potential to show unconventional high-Tc superconductivity (HTSC). A combination of incoherent Hubbard features in x-ray absorption and resonant inelastic x-ray scattering spectra, as well as resistivity data, reveal that the parent FeO C h are correlation-driven insulators. To uncover microscopics underlying these findings, we perform local density approximation-plus-dynamical mean field theory (LDA+DMFT) calculations that reveal a novel Mott-Kondo insulating state. Based upon good agreement between theory and a range of data, we propose that FeO C h may constitute an ideal testing ground to explore HTSC arising from a strange metal proximate to a novel selective-Mott quantum criticality.

  4. Chiral Mott insulators, Meissner effect, and Laughlin states in quantum ladders

    Science.gov (United States)

    Petrescu, Alexandru; Le Hur, Karyn

    2015-02-01

    We introduce generic bosonic models exemplifying that chiral Meissner currents can persist in insulating phases of matter. We first consider interacting bosons on a two-leg ladder. The total density sector can be gapped in a bosonic Mott insulator at odd-integer filling, while the relative density sector remains superfluid due to interchain hopping. Coupling the relative density to gauge fields yields a pseudospin Meissner effect. We show that the same phase arises if the bosons are replaced by spinful fermions confined in Cooper pairs, and find a dual fermionic Mott insulator with spinon currents. We prove that, by tuning the mean density, the Mott insulator with Meissner currents turns into a low-dimensional bosonic ν =1/2 Laughlin state for strong enough repulsive interactions across the ladder rungs. We finally discuss extensions to multileg ladders and bilayers in which spinon superfluids with Meissner currents become possible. We propose two experimental realizations, one with ultracold atoms in the setup of Atala et al. [Nat. Phys. 10, 588 (2014), 10.1038/nphys2998] and another with Josephson junction arrays. We also address a Bose-Fermi mixture subject to a magnetic field in connection with the pseudogap phase of high-Tc cuprates.

  5. Charge dynamics of the antiferromagnetically ordered Mott insulator

    Science.gov (United States)

    Han, Xing-Jie; Liu, Yu; Liu, Zhi-Yuan; Li, Xin; Chen, Jing; Liao, Hai-Jun; Xie, Zhi-Yuan; Normand, B.; Xiang, Tao

    2016-10-01

    We introduce a slave-fermion formulation in which to study the charge dynamics of the half-filled Hubbard model on the square lattice. In this description, the charge degrees of freedom are represented by fermionic holons and doublons and the Mott-insulating characteristics of the ground state are the consequence of holon-doublon bound-state formation. The bosonic spin degrees of freedom are described by the antiferromagnetic Heisenberg model, yielding long-ranged (Néel) magnetic order at zero temperature. Within this framework and in the self-consistent Born approximation, we perform systematic calculations of the average double occupancy, the electronic density of states, the spectral function and the optical conductivity. Qualitatively, our method reproduces the lower and upper Hubbard bands, the spectral-weight transfer into a coherent quasiparticle band at their lower edges and the renormalisation of the Mott gap, which is associated with holon-doublon binding, due to the interactions of both quasiparticle species with the magnons. The zeros of the Green function at the chemical potential give the Luttinger volume, the poles of the self-energy reflect the underlying quasiparticle dispersion with a spin-renormalised hopping parameter and the optical gap is directly related to the Mott gap. Quantitatively, the square-lattice Hubbard model is one of the best-characterised problems in correlated condensed matter and many numerical calculations, all with different strengths and weaknesses, exist with which to benchmark our approach. From the semi-quantitative accuracy of our results for all but the weakest interaction strengths, we conclude that a self-consistent treatment of the spin-fluctuation effects on the charge degrees of freedom captures all the essential physics of the antiferromagnetic Mott-Hubbard insulator. We remark in addition that an analytical approximation with these properties serves a vital function in developing a full understanding of the

  6. Rigorous mean-field dynamics of lattice bosons: quenches from the Mott insulator

    NARCIS (Netherlands)

    M. Snoek

    2011-01-01

    We provide a rigorous derivation of Gutzwiller mean-field dynamics for lattice bosons, showing that it is exact on fully connected lattices. We apply this formalism to quenches in the interaction parameter from the Mott insulator to the superfluid state. Although within mean-field the Mott insulator

  7. Möbius molecules and fragile Mott insulators

    Science.gov (United States)

    Muechler, Lukas; Maciejko, Joseph; Neupert, Titus; Car, Roberto

    2015-03-01

    Motivated by the concept of Möbius aromatics in organic chemistry, we extend the recently introduced concept of fragile Mott insulators (FMI) to ring-shaped molecules with repulsive Hubbard interactions threaded by a half-quantum of magnetic flux (hc / 2 e). In this context, a FMI is the insulating ground state of a finite-size molecule that cannot be adiabatically connected to a single Slater determinant, i.e., to a band insulator, provided that time-reversal and lattice translation symmetries are preserved. Based on exact numerical diagonalization for finite Hubbard interaction strength U and existing Bethe-ansatz studies of the one-dimensional Hubbard model in the large- U limit, we establish a duality between Hubbard molecules with 4 n and 4 n + 2 sites, with n integer. A molecule with 4 n sites is an FMI in the absence of flux but becomes a band insulator in the presence of a half-quantum of flux, while a molecule with 4 n + 2 sites is a band insulator in the absence of flux but becomes an FMI in the presence of a half-quantum of flux. Including next-nearest-neighbor-hoppings gives rise to new FMI states that belong to multidimensional irreducible representations of the molecular point group, giving rise to a rich phase diagram. Reference: arXiv:1409.6732

  8. Phase coexistence and Mott metal-insulator transition in the doped Hubbard-Holstein model

    Science.gov (United States)

    Moradi Kurdestany, Jamshid; Satpathy, Sashi

    2015-03-01

    Motivated by recent progress in the understanding of the Mott insulators away from half filling [?], often observed in the oxide materials, we study the role of the electron-lattice interaction vis-à-vis the electron correlations by studying the one-band Hubbard-Holstein model using the Gutzwiller variational method. Our theory predicts phase separation for sufficiently strong electron-lattice interaction, which however is frustrated in the solid due to the long-range Coulomb interaction of the dopant atoms, resulting in puddles of metallic phases embedded in the insulating matrix. Metallic state occurs when the volume fraction of the metallic phase exceeds the percolation threshold, as the dopant concentration is increased. Connection is made with the experimentally observed metal-insulator transition in the complex oxides.

  9. Explicit Analysis of Creating Maximally Entangled State in the Mott Insulator State

    Institute of Scientific and Technical Information of China (English)

    LI Min-Si; TIAN Li-Jun; ZHANG Hong-Biao

    2004-01-01

    @@ We clarify the essence of the method proposed by You (Phys. Rev. Lett. 90 (2004) 030402) to create the maximally entangled atomic N-GHZ state in the Mott insulator state. Based on the time-independent perturbation theory,we find that the validity of the method can be summarized as that the Hamiltonian governing the evolution is approximately equivalent to the type aJ2x + bJx, which is the well known form used to create the maximally entangled state.

  10. Inhomogeneous field induced magnetoelectric effect in Mott insulators

    Energy Technology Data Exchange (ETDEWEB)

    Boulaevskii, Lev N [Los Alamos National Laboratory; Batista, Cristian D [Los Alamos National Laboratory

    2008-01-01

    We consider a Mott insulator like HoMnO{sub 3} whose magnetic lattice is geometrically frustrated and comprises a 3D array of triangular layers with magnetic moments ordered in a 120{sup o} structure. We show that the effect of a uniform magnetic field gradient, {gradient}H, is to redistribute the electronic charge of the magnetically ordered phase leading to a unfirom electric field gradient. The resulting voltage difference between the crystal edges is proportional to the square of the crystal thickness, or inter-edge distance, L. It can reach values of several volts for |{gradient}H| {approx} 0.01 T/cm and L {approx_equal} 1mm, as long as the crystal is free of antiferromagnetic domain walls.

  11. Cluster Mott insulators and two Curie-Weiss regimes on an anisotropic kagome lattice

    Science.gov (United States)

    Chen, Gang; Kee, Hae-Young; Kim, Yong Baek

    2016-06-01

    Motivated by recent experiments on the quantum-spin-liquid candidate material LiZn2Mo3O8 , we study a single-band extended Hubbard model on an anisotropic kagome lattice with the 1/6 electron filling. Due to the partial filling of the lattice, the intersite repulsive interaction is necessary to generate Mott insulators, where electrons are localized in clusters rather than at lattice sites. It is shown that these cluster Mott insulators are generally U(1) quantum spin liquids with spinon Fermi surfaces. The nature of charge excitations in cluster Mott insulators can be quite different from conventional Mott insulator and we show that there exists a cluster Mott insulator where charge fluctuations around the hexagonal cluster induce a plaquette charge order (PCO). The spinon excitation spectrum in this spin-liquid cluster Mott insulator is reconstructed due to the PCO so that only 1/3 of the total spinon excitations are magnetically active. Based on these results, we propose that the two Curie-Weiss regimes of the spin susceptibility in LiZn2Mo3O8 may be explained by finite-temperature properties of the cluster Mott insulator with the PCO as well as fractionalized spinon excitations. Existing and possible future experiments on LiZn2Mo3O8 , and other Mo-based cluster magnets are discussed in light of these theoretical predictions.

  12. Magnetic Behavior of a Mott-Insulator YVO3

    Science.gov (United States)

    Kawano, Hazuki; Yoshizawa, Hideki; Ueda, Yutaka

    1994-08-01

    As one of the members of the ABO3-type pseudoperovskite oxide family, Y1-xCaxVO3 exhibits an insulator-metal transition upon a change in the dopant calcium ion concentration x. We have reinvestigated the magnetic structure of the parent compound YVO3 with use of the neutron scattering technique. YVO3 orders at T N1=118 K with the so-called C-type antiferromagnetic structure, but changes to the G-type antiferromagnetic structure at T N2˜77 K through a first order transition with lattice distortion. These spin structures differ from those of an early study by Zubkov et al. (Sov. Phys.-JETP 39 (1974) 896). The static moment which contributes to the magnetic long range order is extrapolated to be less than 1.6 µ B at T=0 K. This value of the static moment is more than 20% smaller than 2.0 µ B expected for a localized spin system with S=1, indicating the existence of spin fluctuations in a Mott insulator YVO3.

  13. Local density of states study of a spin-orbit-coupling induced Mott insulator Sr2IrO4

    Science.gov (United States)

    Dai, Jixia; Calleja, Eduardo; Cao, Gang; McElroy, Kyle

    2014-07-01

    We present scanning tunneling microscopy and spectroscopy experiments on the novel Jeff=1/2 Mott insulator Sr2IrO4. Local density of states (LDOS) measurements show an intrinsic insulating gap of 620 meV that is asymmetric about the Fermi level and is larger than previously reported values. The size of this gap suggests that Sr2IrO4 is likely a Mott rather than Slater insulator. In addition, we found a small number of native defects which create in-gap spectral weight. Atomically resolved LDOS measurements on and off the defects show that this energy gap is quite fragile. Together the extended nature of the 5d electrons and poor screening of defects help explain the elusive nature of this gap.

  14. Fermi surface topology in the proximity to the Mott insulator

    Science.gov (United States)

    Yamaji, Youhei; Imada, Masatoshi

    2010-03-01

    Since the discovery of cuprate superconductors, how its low energy electronic excitations evolve with doping has attracted much attention. The normal metallic state offers a typical example of strongly correlated metallic state. Recent experiments suggest the existence of the k-dependent renormalized quasiparticle [1], or more drastic reconstruction of the Fermi surface [2]. Numerical theories on the two-dimensional Hubbard model also predict the reconstruction of the Fermi surface [3]. We propose a scenario for the Fermi surface reconstruction in the proximity to the Mott insulator based on the simple slave-boson mean-field theory [4] including charge fluctuations [5]. The key idea is the emergence of new fermionic excitations consisting of charge bosons and low energy coherent electrons, and occurrence of topological changes in the Fermi surface. We also discuss relation between the topological changes and superconductivities. [1] As a review, A. Damascelli, Z. Hussain, and Z.-X. Shen, Rev. Mod. Phys. 75, 473 (2003). [2] J. Meng, et al., arXiv: 0906.2682v1. [3] For example, T. D. Stanescu and G. Kotliar, Phys. Rev. B 74, 125110 (2006). [4] G. Kotliar, and A. E. Ruckenstein: Phys. Rev. Lett. 57, 1362 (1987). [5] R. Raimondi, and C. Castellani; Phys. Rev. B 48, 11453 (1993).

  15. Photo-doped carrier dynamics in Mott insulatoring systems

    Science.gov (United States)

    Iyoda, Eiki; Ishihara, Sumio

    2013-03-01

    Electron/hole doping in Mott insulators, for example two-dimensional cuprates, has been well investigated in relation to high-Tc superconductivity. Especially related to photo-doping, many experiments on photo-induced phase transition in strongly correlated systems have been made. In the usual photo-doping setup, the system is excited with fs-laser pulse and generated electron-hole pairs affect properties of materials. Recently, another type of photo-doped experiment with heterostructure has been made, and hole or electron carriers are dynamically injected through the heterostructure. In this theoretical study, we examine photo-doped carrier dynamics in the t-J model with dynamically doped holes. We formulate dynamics of the carriers by non-equilibrium Green functions. We take an initial state of holes and decompose the non-equilibrium Green's function into a series of equilibrium Green's functions by using Wick's theorem. The effect of the initial distribution appears from the higher terms in the series. We treat magnons with the self-consistent Born approximation. The non-equilibrium Green function derived in this way shows double time dependence. We will present physical quantities in transient process, for example, one-particle excitation spectra for holes.

  16. Mott insulators and the doping-induced Mott transition within DMFT: exact results for the one-band Hubbard model

    Science.gov (United States)

    Logan, David E.; Galpin, Martin R.

    2016-01-01

    The paramagnetic phase of the one-band Hubbard model is studied at zero-temperature, within the framework of dynamical mean-field theory, and for general particle-hole asymmetry where a doping-induced Mott transition occurs. Our primary focus is the Mott insulator (MI) phase, and our main aim to establish what can be shown exactly about it. To handle the locally doubly-degenerate MI requires two distinct self-energies, which reflect the broken symmetry nature of the phase and together determine the standard single self-energy. Exact results are obtained for the local charge, local magnetic moment and associated spin susceptibilities, the interaction-renormalised levels, and the low-energy behaviour of the self-energy in the MI phase. The metallic phase is also considered briefly, and shown to acquire an emergent particle-hole symmetry as the Mott transition is approached. Throughout the metal, Luttinger’s theorem is reflected in the vanishing of the Luttinger integral; for the generic MI by contrast this is shown to be non-vanishing, but again to have a universal magnitude. Numerical results are also obtained using NRG, for the metal/MI phase boundary, the scaling behaviour of the charge as the Mott transition is aproached from the metal, and associated universal scaling of single-particle dynamics as the low-energy Kondo scale vanishes.

  17. Characterizing featureless Mott insulating state by quasiparticle interference: A dynamical mean field theory view

    Science.gov (United States)

    Mukherjee, Shantanu; Lee, Wei-Cheng

    2015-12-01

    The quasiparticle interferences (QPIs) of the featureless Mott insulators are investigated by a T -matrix formalism implemented with the dynamical mean field theory (T -DMFT). In the Mott insulating state, due to the singularity at zero frequency in the real part of the electron self-energy [Re Σ (ω )˜η /ω ] predicted by DMFT, where η can be considered as the "order parameter" for the Mott insulating state, QPIs are completely washed out at small bias voltages. However, a further analysis shows that Re Σ (ω ) serves as an energy-dependent chemical potential shift. As a result, the effective bias voltage seen by the system is e V'=e V -Re Σ (e V ) , which leads to a critical bias voltage e Vc˜√{η } satisfying e V'=0 if and only if η is nonzero. Consequently, the same QPI patterns produced by the noninteracting Fermi surfaces appear at this critical bias voltage e Vc in the Mott insulating state. We propose that this reentry of noninteracting QPI patterns at e Vc could serve as an experimental signature of the Mott insulating state, and the order parameter can be experimentally measured as η ˜(eVc) 2 .

  18. Electron-hole doping asymmetry of Fermi surface reconstructed in a simple Mott insulator.

    Science.gov (United States)

    Kawasugi, Yoshitaka; Seki, Kazuhiro; Edagawa, Yusuke; Sato, Yoshiaki; Pu, Jiang; Takenobu, Taishi; Yunoki, Seiji; Yamamoto, Hiroshi M; Kato, Reizo

    2016-08-05

    It is widely recognized that the effect of doping into a Mott insulator is complicated and unpredictable, as can be seen by examining the Hall coefficient in high Tc cuprates. The doping effect, including the electron-hole doping asymmetry, may be more straightforward in doped organic Mott insulators owing to their simple electronic structures. Here we investigate the doping asymmetry of an organic Mott insulator by carrying out electric-double-layer transistor measurements and using cluster perturbation theory. The calculations predict that strongly anisotropic suppression of the spectral weight results in the Fermi arc state under hole doping, while a relatively uniform spectral weight results in the emergence of a non-interacting-like Fermi surface (FS) in the electron-doped state. In accordance with the calculations, the experimentally observed Hall coefficients and resistivity anisotropy correspond to the pocket formed by the Fermi arcs under hole doping and to the non-interacting FS under electron doping.

  19. Device Performance of the Mott InsulatorDevice Performance of the Mott Insulator LaVO3 as a Photovoltaic Material

    KAUST Repository

    Wang, Lingfei

    2015-06-22

    Searching for solar-absorbing materials containing earth-abundant elements with chemical stability is of critical importance for advancing photovoltaic technologies. Mott insulators have been theoretically proposed as potential photovoltaic materials. In this paper, we evaluate their performance in solar cells by exploring the photovoltaic properties of Mott insulator LaVO3 (LVO). LVO films show an indirect band gap of 1.08 eV as well as strong light absorption over a wide wavelength range in the solar spectrum. First-principles calculations on the band structure of LVO further reveal that the d−d transitions within the upper and lower Mott-Hubbard bands and p−d transitions between the O 2p and V 3d band contribute to the absorption in visible and ultraviolet ranges, respectively. Transport measurements indicate strong carrier trapping and the formation of polarons in LVO. To utilize the strong light absorption of LVO and to overcome its poor carrier transport, we incorporate it as a light absorber in solar cells in conjunction with carrier transporters and evaluate its device performance. Our complementary experimental and theoretical results on such prototypical solar cells made of Mott-Hubbard transition-metal oxides pave the road for developing light-absorbing materials and photovoltaic devices based on strongly correlated electrons.

  20. Strongly correlated superconductivity and pseudogap phase near a multiband Mott insulator.

    Science.gov (United States)

    Capone, Massimo; Fabrizio, Michele; Castellani, Claudio; Tosatti, Erio

    2004-07-23

    Near a Mott transition, strong electron correlations may enhance Cooper pairing. This is demonstrated in the dynamical mean field theory solution of a twofold-orbital degenerate Hubbard model with an inverted on-site Hund rule exchange, favoring local spin-singlet configurations. Close to the Mott insulator (which here is a local version of a valence bond insulator) a pseudogap non-Fermi-liquid metal, a superconductor, and a normal metal appear, in striking similarity with the physics of cuprates. The strongly correlated s-wave superconducting state has a larger Drude weight than the corresponding normal state. The role of the impurity Kondo problem is underscored.

  1. Influence of Doping on the Mott Metal—Insulator Transition in Infinite Dimensions

    Institute of Scientific and Technical Information of China (English)

    TONGNing-Hua

    2002-01-01

    We have studied the effect of hole-doping on the established scenerio of the first-order Mott metal-insulator transition (MIT) at half-filling using dynamical mean-field theory and exact diagonalization technique.The mott insulator state is changed into metallic state immediately as holes are doped into the system.The latter is expected to be Fermi liquid.The previously found unanalytical structure of MIT no longer exists for doping as small as 2 percent.We compare our results with that obtained from Gutzwiller approximation.

  2. Influence of Doping on the Mott Metal-Insulator Transition in Infinite Dimensions

    Institute of Scientific and Technical Information of China (English)

    TONG Ning-Hua

    2002-01-01

    We have studied the effect of hole-doping on the established scenerio of the first-order Mott metal-insulatortransition (MIT) at half-filling using dynamical mean-Seld theory and exact diagonalization technique. The Mott insu-lator state is changed into metallic state immediately as holes are doped into the system. The latter is expected to beFermi liquid. The previously found unanalytical structure of MIT no longer exists for doping as small as 2 percent. Wecompare our results with that obtained from Gutzwiller approximation.

  3. New class of planar ferroelectric Mott insulators via first-principles design

    Energy Technology Data Exchange (ETDEWEB)

    Kim, Chanul; Park, Hyowon; Marianetti, Chris A.

    2015-12-11

    which is not common in known materials. Here we use first-principles calculations to design layered double perovskite oxides AABBO6 which achieve the aforementioned properties in the context of Mott insulators. In our design rules, the gap is dictated by B/B electronegativity difference in a Mott state, while the polarization is obtained via nominal d0 filling on the B-site, A-type cations bearing lone-pair electrons, and A = A size mismatch. Successful execution is demonstrated in BaBiCuVO6, BaBiNiVO6, BaLaCuVO6, and PbLaCuVO6.

  4. Resolving the VO2 controversy: Mott mechanism dominates the insulator-to-metal transition

    Science.gov (United States)

    Nájera, O.; Civelli, M.; Dobrosavljević, V.; Rozenberg, M. J.

    2017-01-01

    We consider a minimal model to investigate the metal-insulator transition in VO2. We adopt a Hubbard model with two orbitals per unit cell, which captures the competition between Mott and singlet-dimer localization. We solve the model within dynamical mean-field theory, characterizing in detail the metal-insulator transition and finding new features in the electronic states. We compare our results with available experimental data, obtaining good agreement in the relevant model parameter range. Crucially, we can account for puzzling optical conductivity data obtained within the hysteresis region, which we associate with a metallic state characterized by a split heavy quasiparticle band. Our results show that the thermal-driven insulator-to-metal transition in VO2 is compatible with a Mott electronic mechanism, providing fresh insight to a long-standing "chicken-and-egg" debate and calling for further research of "Mottronics" applications of this system.

  5. Electronic structure study of strongly correlated Mott-insulators

    Science.gov (United States)

    Yin, Quan

    Strongly correlated electronic systems have presented the most challenging problems to condensed matter theorists for many years and this continues to be the case. They are complicated materials with active d or f orbitals, whose valence electrons are in the intermediate region between itinerant (band-like) and highly localized (atomic-like) limits, which demand genuine many-body treatment. Although dealing with strongly correlated systems is a notorious problem, they have drawn broad interests of both theoretical and experimental condensed matter physicists, with intensive studies carried out in the past and present. This is due to the most exotic properties associated with strongly correlated materials, such as high-temperature superconductivity, metal-insulator transition, volume collapse, Kondo effect, colossal magnetoresistance, and many others. Although density functional theory (DFT) within local density approximation (LDA) is very successful in describing a wide range of materials, it encounters difficulty in predicting strongly correlated systems. Traditionally, they have been studied by model Hamiltonians with empirical parameters. The development of dynamical mean field theory (DMFT) and its marriage to DFT have brought new hope for first-principle study of strongly correlated systems. In this work, electronic structures of select strongly correlated systems are studied using LDA+DMFT. As theoretical backgrounds, reviews of DFT and DMFT are given in the first few chapters, where we also introduce the philosophy and workflow of LDA+DMFT. In the following chapters, applications to transition metal oxides, undoped high-temperature superconductors and actinide oxides are presented, where electronic structures of these materials and other properties derived from electronic structures are calculated and compared with experiments where available. Generally good agreements have been found between theory and experiments.

  6. How Cooper pairs vanish approaching the Mott insulator in Bi2Sr2CaCu2O8+delta.

    Science.gov (United States)

    Kohsaka, Y; Taylor, C; Wahl, P; Schmidt, A; Lee, Jhinhwan; Fujita, K; Alldredge, J W; McElroy, K; Lee, Jinho; Eisaki, H; Uchida, S; Lee, D-H; Davis, J C

    2008-08-28

    The antiferromagnetic ground state of copper oxide Mott insulators is achieved by localizing an electron at each copper atom in real space (r-space). Removing a small fraction of these electrons (hole doping) transforms this system into a superconducting fluid of delocalized Cooper pairs in momentum space (k-space). During this transformation, two distinctive classes of electronic excitations appear. At high energies, the mysterious 'pseudogap' excitations are found, whereas, at lower energies, Bogoliubov quasi-particles-the excitations resulting from the breaking of Cooper pairs-should exist. To explore this transformation, and to identify the two excitation types, we have imaged the electronic structure of Bi(2)Sr(2)CaCu(2)O(8+delta) in r-space and k-space simultaneously. We find that although the low-energy excitations are indeed Bogoliubov quasi-particles, they occupy only a restricted region of k-space that shrinks rapidly with diminishing hole density. Concomitantly, spectral weight is transferred to higher energy r-space states that lack the characteristics of excitations from delocalized Cooper pairs. Instead, these states break translational and rotational symmetries locally at the atomic scale in an energy-independent way. We demonstrate that these unusual r-space excitations are, in fact, the pseudogap states. Thus, as the Mott insulating state is approached by decreasing the hole density, the delocalized Cooper pairs vanish from k-space, to be replaced by locally translational- and rotational-symmetry-breaking pseudogap states in r-space.

  7. Mott metal-insulator transition in the doped Hubbard-Holstein model

    Science.gov (United States)

    Kurdestany, Jamshid Moradi; Satpathy, S.

    2017-08-01

    Motivated by the current interest in the understanding of the Mott insulators away from half-filling, observed in many perovskite oxides, we study the Mott metal-insulator transition in the doped Hubbard-Holstein model using the Hartree-Fock mean field theory. The Hubbard-Holstein model is the simplest model containing both the Coulomb and the electron-lattice interactions, which are important ingredients in the physics of the perovskite oxides. In contrast to the half-filled Hubbard model, which always results in a single phase (either metallic or insulating), our results show that away from half-filling, a mixed phase of metallic and insulating regions occurs. As the dopant concentration is increased, the metallic part progressively grows in volume, until it exceeds the percolation threshold, leading to percolative conduction. This happens above a critical dopant concentration δc, which, depending on the strength of the electron-lattice interaction, can be a significant fraction of unity. This means that the material could be insulating even for a substantial amount of doping, in contrast to the expectation that doped holes would destroy the insulating behavior of the half-filled Hubbard model. While effects of fluctuation beyond the mean field remain an open question, our results provide a starting point for the understanding of the density-driven metal-insulator transition observed in many complex oxides.

  8. Li2RhO3: A spin-glassy relativistic Mott insulator

    Science.gov (United States)

    Luo, Yongkang; Cao, Chao; Si, Bingqi; Li, Yuke; Bao, Jinke; Guo, Hanjie; Yang, Xiaojun; Shen, Chenyi; Feng, Chunmu; Dai, Jianhui; Cao, Guanghan; Xu, Zhu-an

    2013-04-01

    Motivated by the rich interplay among electronic correlation, spin-orbit coupling (SOC), crystal-field splitting, and geometric frustrations in the honeycomblike lattice, we systematically investigated the electronic and magnetic properties of Li2RhO3. The material is semiconducting with a narrow band gap of Δ˜78 meV, and its temperature dependence of resistivity conforms to a three-dimensional variable range hopping mechanism. No long-range magnetic ordering was found down to 0.5 K, due to the geometric frustrations. Instead, single atomic spin-glass behavior below the spin-freezing temperature (˜6 K) was observed and its spin dynamics obeys the universal critical slowing down scaling law. A first-principles calculation suggested it to be a relativistic Mott insulator mediated by both electronic correlation and SOC. With moderate strength of electronic correlation and SOC, our results shed light on the research of the Heisenberg-Kitaev model in realistic materials.

  9. Volume-wise destruction of the antiferromagnetic Mott insulating state through quantum tuning

    Science.gov (United States)

    Frandsen, Benjamin A.; Liu, Lian; Cheung, Sky C.; Guguchia, Zurab; Khasanov, Rustem; Morenzoni, Elvezio; Munsie, Timothy J. S.; Hallas, Alannah M.; Wilson, Murray N.; Cai, Yipeng; Luke, Graeme M.; Chen, Bijuan; Li, Wenmin; Jin, Changqing; Ding, Cui; Guo, Shengli; Ning, Fanlong; Ito, Takashi U.; Higemoto, Wataru; Billinge, Simon J. L.; Sakamoto, Shoya; Fujimori, Atsushi; Murakami, Taito; Kageyama, Hiroshi; Alonso, Jose Antonio; Kotliar, Gabriel; Imada, Masatoshi; Uemura, Yasutomo J.

    2016-08-01

    RENiO3 (RE=rare-earth element) and V2O3 are archetypal Mott insulator systems. When tuned by chemical substitution (RENiO3) or pressure (V2O3), they exhibit a quantum phase transition (QPT) between an antiferromagnetic Mott insulating state and a paramagnetic metallic state. Because novel physics often appears near a Mott QPT, the details of this transition, such as whether it is first or second order, are important. Here, we demonstrate through muon spin relaxation/rotation (μSR) experiments that the QPT in RENiO3 and V2O3 is first order: the magnetically ordered volume fraction decreases to zero at the QPT, resulting in a broad region of intrinsic phase separation, while the ordered magnetic moment retains its full value until it is suddenly destroyed at the QPT. These findings bring to light a surprising universality of the pressure-driven Mott transition, revealing the importance of phase separation and calling for further investigation into the nature of quantum fluctuations underlying the transition.

  10. Theoretical description of photo-doping in Mott and charge-transfer insulators

    Science.gov (United States)

    Eckstein, Martin

    2012-02-01

    Many aspects of photo-excited insulator-to-metal transitions in Mott and charge-transfer systems are theoretically not well understood: How is the photo-doped state related to a chemically doped state? On what timescale do we expect the formation of quasiparticles? To describe the electronic dynamics of Mott insulators, we have used nonequilibrium dynamical mean-field theory (DMFT) in combination with Quantum Monte Carlo and various weak and strong-coupling [1] techniques. In the talk, I will briefly present the current status of this approach and of related cluster approaches for nonequilibrium. I will then discuss results for the photo-doping in the Hubbard model, and in a in a p-d model for charge-transfer insulators. When the onsite Coulomb repulsion U is much larger than the hopping, rapid thermalization of the pump-excited Mott insulator is inhibited by the energetic stabilization of doublon-hole pairs [2], and various types of non-thermal states can arise. Immediately after the excitation process, the system of doublons and holes is too hot to form quasiparticle states, but coupling to a heat-bath of phonons can drive the system into a metallic state with well developed doublon and hole bands. Close to the metal-insulator transition, on the other hand, when U is of the order as the hopping, doublons and holes rapidly thermalize due to the electron-electron interaction, which makes the system a bad metal rather than a Fermi liquid. [4pt] [1] M. Eckstein and Ph. Werner, Phys. Rev. B 82, 115115 (2010).[0pt] [2] M. Eckstein and Ph. Werner, Phys. Rev. B 84, 035122 (2011).

  11. Effects of higher-order energy bands and temperature on the bosonic Mott insulator in a periodically modulated lattice

    Science.gov (United States)

    Sajna, A. S.

    2016-10-01

    We show that a certain class of higher-order excitations in ultracold atoms experiments can be described by straightforward extension of the standard strong coupling approach in the coherent state path integral formalism. It is achieved by theoretical analysis of energy absorption spectroscopy in the three-dimensional system of strongly correlated bosons described by the Bose-Hubbard model. In particular, for unit filling, an explicit form of the single-particle Mott insulator Green function at finite temperatures is derived which goes beyond the standard Hubbard bands description. Moreover, for relevant densities, we calculated the energy absorption rate and performed thermometry on rubidium atomic cloud gas by using previously obtained experimental data. Within the local density approximation, we explain that in such systems the nature of absorption spectrum depends significantly on local chemical potential: (a) the crossover region between lobes is characterized by different types of particle-hole excitations from neighboring Mott lobes and (b) origin of higher-order energy excitations changes from hole type to particle type for higher bosonic densities.

  12. Realizing topological Mott insulators from the RKKY interaction

    Science.gov (United States)

    Liu, Tianhan; Douçot, Benoît; Le Hur, Karyn

    2016-05-01

    We engineer topological insulating phases in a fermion-fermion mixture on the honeycomb lattice, without resorting to artificial gauge fields or spin-orbit couplings and considering only local interactions. Essentially, upon integrating out the fast component (characterized by a larger hopping amplitude) in a finite region of dopings, we obtain an effective interaction between the slow fermions at half-filling, which acquires a Haldane mass with opposite parity in the two valleys of the Dirac cones, thus triggering a quantum anomalous Hall effect. We carefully analyze the competition between the induced Semenoff-type mass (producing charge density wave orders in real space) versus the Haldane mass (quantum anomalous Hall phase), as a function of the chemical potential of the fast fermions. If the second species involves spin-1/2 particles, this interaction may induce a quantum spin Hall phase. Such fermion-fermion mixtures can be realized in optical lattices or in graphene heterostructures.

  13. Wannier permanent wave functions for featureless bosonic mott insulators on the 1/3-filled kagome lattice.

    Science.gov (United States)

    Parameswaran, S A; Kimchi, Itamar; Turner, Ari M; Stamper-Kurn, D M; Vishwanath, Ashvin

    2013-03-22

    We study Bose-Hubbard models on tight-binding, non-Bravais lattices, with a filling of one boson per unit cell--and thus fractional site filling. We discuss situations where no classical bosonic insulator, which is a product state of particles on independent sites, is admitted. Nevertheless, we show that it is possible to construct a quantum Mott insulator of bosons if a trivial band insulator of fermions is possible at the same filling. The ground state wave function is simply a permanent of exponentially localized Wannier orbitals. Such a Wannier permanent wave function is featureless in that it respects all lattice symmetries and is the unique ground state of a parent Hamiltonian that we construct. Motivated by the recent experimental demonstration of a kagome optical lattice of bosons, we study this lattice at 1/3 site filling. Previous approaches to this problem have invariably produced either broken-symmetry states or topological order. Surprisingly, we demonstrate that a featureless insulator is a possible alternative and is the exact ground state of a local Hamiltonian. We briefly comment on the experimental relevance of our results to ultracold atoms as well as to 1/3 magnetization plateaus for kagome spin models in an applied field.

  14. Large Fermi Surface of Heavy Electrons at the Border of Mott Insulating State in NiS2

    Science.gov (United States)

    Friedemann, S.; Chang, H.; Gamża, M. B.; Reiss, P.; Chen, X.; Alireza, P.; Coniglio, W. A.; Graf, D.; Tozer, S.; Grosche, F. M.

    2016-01-01

    One early triumph of quantum physics is the explanation why some materials are metallic whereas others are insulating. While a treatment based on single electron states is correct for most materials this approach can fail spectacularly, when the electrostatic repulsion between electrons causes strong correlations. Not only can these favor new and subtle forms of matter, such as magnetism or superconductivity, they can even cause the electrons in a half-filled energy band to lock into position, producing a correlated, or Mott insulator. The transition into the Mott insulating state raises important fundamental questions. Foremost among these is the fate of the electronic Fermi surface and the associated charge carrier mass, as the Mott transition is approached. We report the first direct observation of the Fermi surface on the metallic side of a Mott insulating transition by high pressure quantum oscillatory measurements in NiS2. Our results point at a large Fermi surface consistent with Luttinger’s theorem and a strongly enhanced quasiparticle effective mass. These two findings are in line with central tenets of the Brinkman-Rice picture of the correlated metal near the Mott insulating state and rule out alternative scenarios in which the carrier concentration vanishes continuously at the metal-insulator transition. PMID:27174799

  15. Large Fermi Surface of Heavy Electrons at the Border of Mott Insulating State in NiS2.

    Science.gov (United States)

    Friedemann, S; Chang, H; Gamża, M B; Reiss, P; Chen, X; Alireza, P; Coniglio, W A; Graf, D; Tozer, S; Grosche, F M

    2016-05-12

    One early triumph of quantum physics is the explanation why some materials are metallic whereas others are insulating. While a treatment based on single electron states is correct for most materials this approach can fail spectacularly, when the electrostatic repulsion between electrons causes strong correlations. Not only can these favor new and subtle forms of matter, such as magnetism or superconductivity, they can even cause the electrons in a half-filled energy band to lock into position, producing a correlated, or Mott insulator. The transition into the Mott insulating state raises important fundamental questions. Foremost among these is the fate of the electronic Fermi surface and the associated charge carrier mass, as the Mott transition is approached. We report the first direct observation of the Fermi surface on the metallic side of a Mott insulating transition by high pressure quantum oscillatory measurements in NiS2. Our results point at a large Fermi surface consistent with Luttinger's theorem and a strongly enhanced quasiparticle effective mass. These two findings are in line with central tenets of the Brinkman-Rice picture of the correlated metal near the Mott insulating state and rule out alternative scenarios in which the carrier concentration vanishes continuously at the metal-insulator transition.

  16. Antiferromagnetic resonance in the Mott insulator fcc-Cs3C60.

    Science.gov (United States)

    Suzuki, Yuta; Shibasaki, Seiji; Kubozono, Yoshihiro; Kambe, Takashi

    2013-09-11

    The magnetic ground state of the fcc phase of the Mott insulator Cs3C60 was studied using a low-temperature electron spin resonance technique, and antiferromagnetic resonance (AFMR) below 1.57 K was directly observed at ambient pressure. The AFMR modes for the fcc phase of Cs3C60 were investigated using a conventional two-sublattice model with uniaxial anisotropy, and the spin-flop field was determined to be 4.7 kOe at 1.57 K. The static magnetic exchange interactions and anisotropy field for fcc-Cs3C60 were also estimated.

  17. Mott-Insulator to Liquid Transition and Population Trapping in Ultracold Fermi Gases by Non-Equilibrium Modulation of the Optical Lattice

    CERN Document Server

    Frank, Regine

    2011-01-01

    An ultracold gas of interacting fermionic atoms in a three dimensional optical lattice is considered, where the lattice potential strength is periodically modulated. This non-equilibrium system is nonperturbatively described by means of a Keldysh-Floquet-Green's function approach employing a generalized dynamical mean field theory (DMFT). Strong repulsive interactions between different atoms lead to a Mott-Insulator state for the equilibrium system, but the additional external driving yields a non-equilibrium density of Floquet-states and a transition to a liquid or conducting state.

  18. Prospect of quantum anomalous Hall and quantum spin Hall effect in doped kagome lattice Mott insulators

    Science.gov (United States)

    Guterding, Daniel; Jeschke, Harald O.; Valentí, Roser

    2016-05-01

    Electronic states with non-trivial topology host a number of novel phenomena with potential for revolutionizing information technology. The quantum anomalous Hall effect provides spin-polarized dissipation-free transport of electrons, while the quantum spin Hall effect in combination with superconductivity has been proposed as the basis for realizing decoherence-free quantum computing. We introduce a new strategy for realizing these effects, namely by hole and electron doping kagome lattice Mott insulators through, for instance, chemical substitution. As an example, we apply this new approach to the natural mineral herbertsmithite. We prove the feasibility of the proposed modifications by performing ab-initio density functional theory calculations and demonstrate the occurrence of the predicted effects using realistic models. Our results herald a new family of quantum anomalous Hall and quantum spin Hall insulators at affordable energy/temperature scales based on kagome lattices of transition metal ions.

  19. Prospect of quantum anomalous Hall and quantum spin Hall effect in doped kagome lattice Mott insulators.

    Science.gov (United States)

    Guterding, Daniel; Jeschke, Harald O; Valentí, Roser

    2016-05-17

    Electronic states with non-trivial topology host a number of novel phenomena with potential for revolutionizing information technology. The quantum anomalous Hall effect provides spin-polarized dissipation-free transport of electrons, while the quantum spin Hall effect in combination with superconductivity has been proposed as the basis for realizing decoherence-free quantum computing. We introduce a new strategy for realizing these effects, namely by hole and electron doping kagome lattice Mott insulators through, for instance, chemical substitution. As an example, we apply this new approach to the natural mineral herbertsmithite. We prove the feasibility of the proposed modifications by performing ab-initio density functional theory calculations and demonstrate the occurrence of the predicted effects using realistic models. Our results herald a new family of quantum anomalous Hall and quantum spin Hall insulators at affordable energy/temperature scales based on kagome lattices of transition metal ions.

  20. Prospect of quantum anomalous Hall and quantum spin Hall effect in doped kagome lattice Mott insulators

    Science.gov (United States)

    Guterding, Daniel; Jeschke, Harald O.; Valentí, Roser

    2016-01-01

    Electronic states with non-trivial topology host a number of novel phenomena with potential for revolutionizing information technology. The quantum anomalous Hall effect provides spin-polarized dissipation-free transport of electrons, while the quantum spin Hall effect in combination with superconductivity has been proposed as the basis for realizing decoherence-free quantum computing. We introduce a new strategy for realizing these effects, namely by hole and electron doping kagome lattice Mott insulators through, for instance, chemical substitution. As an example, we apply this new approach to the natural mineral herbertsmithite. We prove the feasibility of the proposed modifications by performing ab-initio density functional theory calculations and demonstrate the occurrence of the predicted effects using realistic models. Our results herald a new family of quantum anomalous Hall and quantum spin Hall insulators at affordable energy/temperature scales based on kagome lattices of transition metal ions. PMID:27185665

  1. Mott insulating states and quantum phase transitions of correlated SU(2 N ) Dirac fermions

    Science.gov (United States)

    Zhou, Zhichao; Wang, Da; Meng, Zi Yang; Wang, Yu; Wu, Congjun

    2016-06-01

    The interplay between charge and spin degrees of freedom in strongly correlated fermionic systems, in particular of Dirac fermions, is a long-standing problem in condensed matter physics. We investigate the competing orders in the half-filled SU (2 N ) Hubbard model on a honeycomb lattice, which can be accurately realized in optical lattices with ultracold large-spin alkaline-earth fermions. Employing large-scale projector determinant quantum Monte Carlo simulations, we have explored quantum phase transitions from the gapless Dirac semimetals to the gapped Mott insulating phases in the SU(4) and SU(6) cases. Both of these Mott insulating states are found to be columnar valence bond solid (cVBS) and to be absent of the antiferromagnetic Néel ordering and the loop current ordering. Inside the cVBS phases, the dimer ordering is enhanced by increasing fermion components and behaves nonmonotonically as the interaction strength increases. Although the transitions generally should be of first order due to a cubic invariance possessed by the cVBS order, the coupling to gapless Dirac fermions can soften the transitions to second order through a nonanalytic term in the free energy. Our simulations provide important guidance for the experimental explorations of novel states of matter with ultracold alkaline-earth fermions.

  2. Superconductor to Mott insulator transition in YBa2Cu3O7/LaCaMnO3 heterostructures

    Science.gov (United States)

    Gray, B. A.; Middey, S.; Conti, G.; Gray, A. X.; Kuo, C.-T.; Kaiser, A. M.; Ueda, S.; Kobayashi, K.; Meyers, D.; Kareev, M.; Tung, I. C.; Liu, Jian; Fadley, C. S.; Chakhalian, J.; Freeland, J. W.

    2016-09-01

    The superconductor-to-insulator transition (SIT) induced by means such as external magnetic fields, disorder or spatial confinement is a vivid illustration of a quantum phase transition dramatically affecting the superconducting order parameter. In pursuit of a new realization of the SIT by interfacial charge transfer, we developed extremely thin superlattices composed of high Tc superconductor YBa2Cu3O7 (YBCO) and colossal magnetoresistance ferromagnet La0.67Ca0.33MnO3 (LCMO). By using linearly polarized resonant X-ray absorption spectroscopy and magnetic circular dichroism, combined with hard X-ray photoelectron spectroscopy, we derived a complete picture of the interfacial carrier doping in cuprate and manganite atomic layers, leading to the transition from superconducting to an unusual Mott insulating state emerging with the increase of LCMO layer thickness. In addition, contrary to the common perception that only transition metal ions may respond to the charge transfer process, we found that charge is also actively compensated by rare-earth and alkaline-earth metal ions of the interface. Such deterministic control of Tc by pure electronic doping without any hindering effects of chemical substitution is another promising route to disentangle the role of disorder on the pseudo-gap and charge density wave phases of underdoped cuprates.

  3. Superconductor to Mott insulator transition in YBa2Cu3O7/LaCaMnO3 heterostructures.

    Science.gov (United States)

    Gray, B A; Middey, S; Conti, G; Gray, A X; Kuo, C-T; Kaiser, A M; Ueda, S; Kobayashi, K; Meyers, D; Kareev, M; Tung, I C; Liu, Jian; Fadley, C S; Chakhalian, J; Freeland, J W

    2016-01-01

    The superconductor-to-insulator transition (SIT) induced by means such as external magnetic fields, disorder or spatial confinement is a vivid illustration of a quantum phase transition dramatically affecting the superconducting order parameter. In pursuit of a new realization of the SIT by interfacial charge transfer, we developed extremely thin superlattices composed of high Tc superconductor YBa2Cu3O7 (YBCO) and colossal magnetoresistance ferromagnet La0.67Ca0.33MnO3 (LCMO). By using linearly polarized resonant X-ray absorption spectroscopy and magnetic circular dichroism, combined with hard X-ray photoelectron spectroscopy, we derived a complete picture of the interfacial carrier doping in cuprate and manganite atomic layers, leading to the transition from superconducting to an unusual Mott insulating state emerging with the increase of LCMO layer thickness. In addition, contrary to the common perception that only transition metal ions may respond to the charge transfer process, we found that charge is also actively compensated by rare-earth and alkaline-earth metal ions of the interface. Such deterministic control of Tc by pure electronic doping without any hindering effects of chemical substitution is another promising route to disentangle the role of disorder on the pseudo-gap and charge density wave phases of underdoped cuprates.

  4. Mott-insulator phases of spin-3/2 fermions in the presence of quadratic Zeeman coupling

    NARCIS (Netherlands)

    Rodriguez, K.; Argueelles, A.; Colome-Tatche, M.; Vekua, T.; Santos, L.

    2010-01-01

    We study the influence of the quadratic Zeeman effect on the Mott-insulator phases of hard-core 1D spin-3/2 fermions. We show that, contrary to spinor bosons, the quadratic Zeeman coupling preserves an SU(2) circle times SU(2) symmetry, leading for large-enough quadratic Zeeman coupling to an isotro

  5. Wigner-Mott insulator-to-insulator transition at pressure in charge-ordered Fe2OBO3

    Science.gov (United States)

    Diguet, G.; Hearne, G. R.; Sibanda, W. N.; Carleschi, E.; Musyimi, P.; Pischedda, V.; Attfield, J. P.

    2014-01-01

    Magnetic-electronic studies of mixed-valence Fe2OBO3 have shown that ionic charge order (CO) is disrupted at ˜16 GPa. The pertinent minority-spin carrier exhibits persistent intersite electron exchange Fe2+ ⇔ Fe3+ to well beyond this pressure. Temperature-dependent electrical transport measurements over an extended pressure range presented here demonstrate that the electronic structure remains gapped to well beyond 16 GPa. Extrapolation of data to higher pressure suggests that metallization will only prevail at P>50 GPa. Both the persistent gapped electronic state across the CO instability and signature of carrier confinement to Fe-Fe dimers in the Fe2+ ⇔ Fe3+ electron exchange are rationalized as crossover from a Wigner crystal (site centered) insulator to a dimer Mott (bond centered type) insulator—"Wigner-Mott transition" at ˜16 GPa. The dimer insulating state is a consequence of modulation of the relevant hopping parameter t in quasi-low-dimensional features in the structure (ribbons and chains). Complementary structural studies suggest that the a axis is appreciably more compressible than other crystallographic directions of the original monoclinic unit cell. Therefore, such a modulation in t may arise from Peierls type distortions along the a axis or else stems from intrinsic modulation in the c axis direction of the unit cell. This is aided by a monoclinic (P21/c) → orthorhombic (Pmcn) structural adjustment that is concurrent across the electronic transition. Pressure tuning of relative values of on-site U/t and intersite V/t Coulomb interaction parameters of the quasi-low-dimensional features evolve the system from site-centered to dimer-centered electron localization.

  6. Chiral spin liquid and emergent anyons in a Kagome lattice Mott insulator.

    Science.gov (United States)

    Bauer, B; Cincio, L; Keller, B P; Dolfi, M; Vidal, G; Trebst, S; Ludwig, A W W

    2014-10-10

    Topological phases in frustrated quantum spin systems have fascinated researchers for decades. One of the earliest proposals for such a phase was the chiral spin liquid, a bosonic analogue of the fractional quantum Hall effect, put forward by Kalmeyer and Laughlin in 1987. Elusive for many years, recent times have finally seen this phase realized in various models, which, however, remain somewhat artificial. Here we take an important step towards the goal of finding a chiral spin liquid in nature by examining a physically motivated model for a Mott insulator on the Kagome lattice with broken time-reversal symmetry. We discuss the emergent phase from a network model perspective and present an unambiguous numerical identification and characterization of its universal topological properties, including ground-state degeneracy, edge physics and anyonic bulk excitations, by using a variety of powerful numerical probes, including the entanglement spectrum and modular transformations.

  7. Chiral Spin Liquids in Triangular-Lattice SU (N ) Fermionic Mott Insulators with Artificial Gauge Fields

    Science.gov (United States)

    Nataf, Pierre; Lajkó, Miklós; Wietek, Alexander; Penc, Karlo; Mila, Frédéric; Läuchli, Andreas M.

    2016-10-01

    We show that, in the presence of a π /2 artificial gauge field per plaquette, Mott insulating phases of ultracold fermions with SU (N ) symmetry and one particle per site generically possess an extended chiral phase with intrinsic topological order characterized by an approximate ground space of N low-lying singlets for periodic boundary conditions, and by chiral edge states described by the SU(N ) 1 Wess-Zumino-Novikov-Witten conformal field theory for open boundary conditions. This has been achieved by extensive exact diagonalizations for N between 3 and 9, and by a parton construction based on a set of N Gutzwiller projected fermionic wave functions with flux π /N per triangular plaquette. Experimental implications are briefly discussed.

  8. Mott metal-insulator transition in a metallic liquid - Gutzwiller molecular dynamics simulations

    Science.gov (United States)

    Barros, Kipton; Chern, Gia-Wei; Batista, Cristian D.; Kress, Joel D.; Kotliar, Gabriel

    2015-03-01

    Molecular dynamics (MD) simulations are crucial to modern computational physics, chemistry, and materials science, especially when combined with potentials derived from density-functional theory. However, even in state of the art MD codes, the on-site Coulomb repulsion is only treated at the self-consistent Hartree-Fock level. This standard approximation may miss important effects due to electron correlations. The Gutzwiller variational method captures essential correlated-electron physics yet is much faster than, e.g., the dynamical-mean field theory approach. We present our efficient Gutzwiller-MD implementation. With it, we investigate the Mott metal-insulator transition in a metallic fluid and uncover several surprising static and dynamic properties of this system.

  9. Superfluid-Mott-Insulator Phase Transition and Collective Fluctuations in both Phases of Bosons in an Optical Lattice

    Institute of Scientific and Technical Information of China (English)

    ZHU Rui

    2007-01-01

    The Bose Hubbard model describing interacting bosons in an optical lattice is reduced to a simple spin-1 XY model with single-ion anisotropy in the vicinity of the Mott phase. In the strong coupling Mott insulating regime,we propose a mean field theory based on a constraint SU(3) pseudo-boson representation on the effective model and discuss the excitation spectra and the phase transition to the superfluid state. Further to the superfluid phase, we use the coherent-state approach to derive the collective excitation modes. It is found that the Mott phase has two degenerate gapped quadratic excitation spectra which graduate into two degenerate gapless linear ones at the transition point, and one gapless linear mode with one gapped quadratic mode in the superfluid phase.

  10. Electronic reconstruction at the interface between the Mott insulator LaVO{sub 3} and the band insulator SrTiO{sub 3}

    Energy Technology Data Exchange (ETDEWEB)

    Stuebinger, Martin; Gabel, Judith; Gagel, Philipp; Sing, Michael; Claessen, Ralph [Universitaet Wuerzburg, Physikalisches Institut and Roentgen Center for Complex Material Systems (RCCM), 97074 Wuerzburg (Germany)

    2016-07-01

    Akin to the well known oxide heterostructure LaAlO{sub 3}/SrTiO{sub 3} (LAO/STO) the formation of a conducting interface is found between the strongly correlated, polar Mott insulator LaV{sup 3+}O{sub 3} (LVO) and the non-polar band insulator STO. Since LaV{sup 3+}O{sub 3} tends to overoxidize to the thermodynamically more favourable LaV{sup 5+}O{sub 4} phase when exposed to air, a suitable passivation is required. Therefore, we have employed pulsed laser deposition thin film growth of LVO films with a crystalline LAO capping layer. In situ photoemission measurements of samples before and after being exposed to air show that the V oxidation state can indeed be stabilized by the LAO capping layer. By transport measurements, we identify an insulator-to-metal transition at a combined LAO/LVO overlayer thickness of 4 to 5 unit cells. With LVO being a Mott insulator, passivation by the LAO capping opens the opportunity to study a band-filling controlled Mott insulator to metal transition induced by a purely electrostatic mechanism without interfering overoxidation of the LVO film.

  11. Visualizing the gap closure by Rh dopant in SOC induced Mott insulator Sr2IrO4 with Scanning Tunneling Microscopy

    Science.gov (United States)

    Dai, Jixia; Calleja, Eduardo; McElroy, Kyle; Qi, Tongfei; Cao, Gang

    2013-03-01

    Sr2IrO4 is a novel Jeff = 1/2 Mott insulator with characteristics of 5d electrons. The strong spin orbit coupling (SOC) in the 5d orbitals of iridium plays an important role in the insulating nature of the parent compound, while replacing Ir4+ with the isoelectronic Rh4+ is able to drive the system to a metallic regime. We use variable temperature Scanning Tunneling Microscope to study both the insulating parent compound and the Rh doped Sr2Ir1-xRhxO4, with x =0.04, 0.11. By doing differential conductance measurement, we were able to observe an insulating gap both in the parent compound and the low doping areas of the x =0.04 and 0.11 samples. We also observed that in the doped samples, local gaps varies largely at the atomic length scale. By correlating the locations of Rh dopant and the size of local gaps, we found that Rh doping will decrease the insulating gap size which is in accordance with the metallic behavior observed by transport measurements.

  12. Dynamical cluster approximation plus semiclassical approximation study for a Mott insulator and d-wave pairing

    Science.gov (United States)

    Kim, SungKun; Lee, Hunpyo

    2017-06-01

    Via a dynamical cluster approximation with N c = 4 in combination with a semiclassical approximation (DCA+SCA), we study the doped two-dimensional Hubbard model. We obtain a plaquette antiferromagnetic (AF) Mott insulator, a plaquette AF ordered metal, a pseudogap (or d-wave superconductor) and a paramagnetic metal by tuning the doping concentration. These features are similar to the behaviors observed in copper-oxide superconductors and are in qualitative agreement with the results calculated by the cluster dynamical mean field theory with the continuous-time quantum Monte Carlo (CDMFT+CTQMC) approach. The results of our DCA+SCA differ from those of the CDMFT+CTQMC approach in that the d-wave superconducting order parameters are shown even in the high doped region, unlike the results of the CDMFT+CTQMC approach. We think that the strong plaquette AF orderings in the dynamical cluster approximation (DCA) with N c = 4 suppress superconducting states with increasing doping up to strongly doped region, because frozen dynamical fluctuations in a semiclassical approximation (SCA) approach are unable to destroy those orderings. Our calculation with short-range spatial fluctuations is initial research, because the SCA can manage long-range spatial fluctuations in feasible computational times beyond the CDMFT+CTQMC tool. We believe that our future DCA+SCA calculations should supply information on the fully momentum-resolved physical properties, which could be compared with the results measured by angle-resolved photoemission spectroscopy experiments.

  13. On the possibility of many-body localization in a doped Mott insulator

    Science.gov (United States)

    He, Rong-Qiang; Weng, Zheng-Yu

    2016-01-01

    Many-body localization (MBL) is currently a hot issue of interacting systems, in which quantum mechanics overcomes thermalization of statistical mechanics. Like Anderson localization of non-interacting electrons, disorders are usually crucial in engineering the quantum interference in MBL. For translation invariant systems, however, the breakdown of eigenstate thermalization hypothesis due to a pure many-body quantum effect is still unclear. Here we demonstrate a possible MBL phenomenon without disorder, which emerges in a lightly doped Hubbard model with very strong interaction. By means of density matrix renormalization group numerical calculation on a two-leg ladder, we show that whereas a single hole can induce a very heavy Nagaoka polaron, two or more holes will form bound pair/droplets which are all localized excitations with flat bands at low energy densities. Consequently, MBL eigenstates of finite energy density can be constructed as composed of these localized droplets spatially separated. We further identify the underlying mechanism for this MBL as due to a novel ‘Berry phase’ of the doped Mott insulator, and show that by turning off this Berry phase either by increasing the anisotropy of the model or by hand, an eigenstate transition from the MBL to a conventional quasiparticle phase can be realized. PMID:27752064

  14. An Angle Resolved Photoemission Study of a Mott Insulator and Its Evolution to a High Temperature Superconductor

    Energy Technology Data Exchange (ETDEWEB)

    Ronning, Filip

    2002-03-19

    One of the most remarkable facts about the high temperature superconductors is their close proximity to an antiferromagnetically ordered Mott insulating phase. This fact suggests that to understand superconductivity in the cuprates we must first understand the insulating regime. Due to material properties the technique of angle resolved photoemission is ideally suited to study the electronic structure in the cuprates. Thus, a natural starting place to unlocking the secrets of high Tc would appears to be with a photoemission investigation of insulating cuprates. This dissertation presents the results of precisely such a study. In particular, we have focused on the compound Ca{sub 2-x}Na{sub x}CuO{sub 2}Cl{sub 2}. With increasing Na content this system goes from an antiferromagnetic Mott insulator with a Neel transition of 256K to a superconductor with an optimal transition temperature of 28K. At half filling we have found an asymmetry in the integrated spectral weight, which can be related to the occupation probability, n(k). This has led us to identify a d-wave-like dispersion in the insulator, which in turn implies that the high energy pseudogap as seen by photoemission is a remnant property of the insulator. These results are robust features of the insulator which we found in many different compounds and experimental conditions. By adding Na we were able to study the evolution of the electronic structure across the insulator to metal transition. We found that the chemical potential shifts as holes are doped into the system. This picture is in sharp contrast to the case of La{sub 2-x}Sr{sub x}CuO{sub 4} where the chemical potential remains fixed and states are created inside the gap. Furthermore, the low energy excitations (ie the Fermi surface) in metallic Ca{sub 1.9}Na{sub 0.1}CuO{sub 2}Cl{sub 2} is most well described as a Fermi arc, although the high binding energy features reveal the presence of shadow bands. Thus, the results in this dissertation provide a

  15. Mott insulator to high Tc superconductor via pressure: resonating valence bond theory and prediction of new systems.

    Science.gov (United States)

    Baskaran, G

    2003-05-16

    Mott insulator superconductor transition, via pressure and no external doping, is studied in orbitally nondegenerate spin-1 / 2 systems. It is presented as another resonating valence bond route to high T(c) superconductivity. We propose a "strong coupling" hypothesis that views long range Coulomb force driven first order Mott transition as a self-doping process that also preserves superexchange on the metal side. We present a two-species t-J model where conserved N0 doubly occupied (e(-)) sites and N0 empty sites (e(+)) hop in the background of N-2N(0) singly occupied (neutral) sites in a lattice of N sites. An equivalence to the regular t-J model is made. Some old and new systems are predicted to be candidates for pressure-induced high T(c) superconductivity.

  16. Strong interactions, narrow bands, and dominant spin-orbit coupling in Mott insulating quadruple perovskite CaCo3V4O12

    Science.gov (United States)

    Rhee, H. B.; Pickett, W. E.

    2014-11-01

    We investigate the electronic and magnetic structures and the character and direction of spin and orbital moments of the recently synthesized quadruple perovskite compound CaCo3V4O12 using a selection of methods from density functional theory. Implementing the generalized gradient approximation and the Hubbard U correction (GGA+U ), ferromagnetic spin alignment leads to half-metallicity rather than the observed narrow gap insulating behavior. Including spin-orbit coupling (SOC) leaves a Mott insulating spectrum but with a negligible gap. SOC is crucial for the Mott insulating character of the V d1 ion, breaking the dm =±1 degeneracy and also giving a substantial orbital moment. Evidence is obtained of the large orbital moments on Co that have been inferred from the measured susceptibility. Switching to the orbital polarization (OP) functional, GGA+OP+SOC also displays clear tendencies toward very large orbital moments but in its own distinctive manner. In both approaches, application of SOC, which requires specification of the direction of the spin, introduces large differences in the orbital moments of the three Co ions in the primitive cell. We study a fictitious but simpler cousin compound Ca3CoV4O12 (Ca replacing two of the Co atoms) to probe in a more transparent fashion the interplay of spin and orbital degrees of freedom with the local environment of the planar CoO4 units. The observation is made that the underlying mechanisms seem to be local to a CoO4 plaquette, and that there is very strong coupling of the size of the orbital moment to the spin direction. These facts strongly suggest noncollinear spins, not only on Co but on the V sublattice as well.

  17. Nonlinear quantum critical transport and the Schwinger mechanism for a superfluid-mott-insulator transition of bosons.

    Science.gov (United States)

    Green, A G; Sondhi, S L

    2005-12-31

    Scaling arguments imply that quantum-critical points exhibit universal nonlinear responses to external probes. We investigate the origins of such nonlinearities in transport, which is especially problematic since the system is necessarily driven far from equilibrium. We argue that for a wide class of systems the new ingredient that enters is the Schwinger mechanism--the production of carriers from the vacuum by the applied field--which is then balanced against a scattering rate that is itself set by the field. We show by explicit computation how this works for the case of the symmetric superfluid-Mott insulator transition of bosons.

  18. Ambipolar transport and magneto-resistance crossover in a Mott insulator, Sr2IrO4

    Science.gov (United States)

    Ravichandran, J.; Serrao, C. R.; Efetov, D. K.; Yi, D.; Oh, Y. S.; Cheong, S.-W.; Ramesh, R.; Kim, P.

    2016-12-01

    Electric field effect (EFE) controlled magnetoelectric transport in thin films of undoped and La-doped Sr2IrO4 (SIO) is investigated using ionic liquid gating. The temperature dependent resistance measurements exhibit insulating behavior in chemically and EFE doped samples with the band filling up to 10%. The ambipolar transport across the Mott gap is demonstrated by EFE tuning of the channel resistance and chemical doping. We observe a crossover from high temperature negative to low temperature positive magnetoresistance around  ˜80-90 K, irrespective of the filling. This temperature and magnetic field dependent crossover is discussed in the light of conduction mechanisms of SIO, especially variable range hopping (VRH), and its relevance to the insulating ground state of SIO.

  19. Magnetism, structure, and charge correlation at a pressure-induced Mott-Hubbard insulator-metal transition

    Energy Technology Data Exchange (ETDEWEB)

    Feng, Y.; Jaramillo, R.; Banerjee, A.; Honig, J. M.; Rosenbaum, T. F. (X-Ray Science Division); (Univ. of Chicago); (Harvard Univ.); (Purdue Univ.)

    2011-01-01

    We use synchrotron x-ray diffraction and electrical transport under pressure to probe both the magnetism and the structure of single-crystal NiS{sub 2} across its Mott-Hubbard transition. In the insulator, the low-temperature antiferromagnetic order results from superexchange among correlated electrons and couples to a (1/2, 1/2, 1/2) superlattice distortion. Applying pressure suppresses the insulating state, but enhances the magnetism as the superexchange increases with decreasing lattice constant. By comparing our results under pressure to previous studies of doped crystals, we show that this dependence of the magnetism on the lattice constant is consistent for both band broadening and band filling. In the high-pressure metallic phase the lattice symmetry is reduced from cubic to monoclinic, pointing to the primary influence of charge correlations at the transition. There exists a wide regime of phase separation that may be a general characteristic of correlated quantum matter.

  20. Slater to Mott Crossover in the Metal to Insulator Transition of Nd2Ir2O7

    Science.gov (United States)

    Nakayama, M.; Kondo, Takeshi; Tian, Z.; Ishikawa, J. J.; Halim, M.; Bareille, C.; Malaeb, W.; Kuroda, K.; Tomita, T.; Ideta, S.; Tanaka, K.; Matsunami, M.; Kimura, S.; Inami, N.; Ono, K.; Kumigashira, H.; Balents, L.; Nakatsuji, S.; Shin, S.

    2016-07-01

    We present an angle-resolved photoemission study of the electronic structure of the three-dimensional pyrochlore iridate Nd2Ir2O7 through its magnetic metal-insulator transition. Our data reveal that metallic Nd2Ir2O7 has a quadratic band, touching the Fermi level at the Γ point, similar to that of Pr2Ir2O7 . The Fermi node state is, therefore, a common feature of the metallic phase of the pyrochlore iridates. Upon cooling below the transition temperature, this compound exhibits a gap opening with an energy shift of quasiparticle peaks like a band gap insulator. The quasiparticle peaks are strongly suppressed, however, with further decrease of temperature, and eventually vanish at the lowest temperature, leaving a nondispersive flat band lacking long-lived electrons. We thereby identify a remarkable crossover from Slater to Mott insulators with decreasing temperature. These observations explain the puzzling absence of Weyl points in this material, despite its proximity to the zero temperature metal-insulator transition.

  1. Analytical slave-spin mean-field approach to orbital selective Mott insulators

    Science.gov (United States)

    Komijani, Yashar; Kotliar, Gabriel

    2017-09-01

    We use the slave-spin mean-field approach to study particle-hole symmetric one- and two-band Hubbard models in the presence of Hund's coupling interaction. By analytical analysis of the Hamiltonian, we show that the locking of the two orbitals vs orbital selective Mott transition can be formulated within a Landau-Ginzburg framework. By applying the slave-spin mean field to impurity problems, we are able to make a correspondence between impurity and lattice. We also consider the stability of the orbital selective Mott phase to the hybridization between the orbitals and study the limitations of the slave-spin method for treating interorbital tunnelings in the case of multiorbital Bethe lattices with particle-hole symmetry.

  2. Electron and hole doping in the relativistic Mott insulator Sr2IrO4 : A first-principles study using band unfolding technique

    Science.gov (United States)

    Liu, Peitao; Reticcioli, Michele; Kim, Bongjae; Continenza, Alessandra; Kresse, Georg; Sarma, D. D.; Chen, Xing-Qiu; Franchini, Cesare

    2016-11-01

    We study the effects of dilute La and Rh substitutional doping on the electronic structure of the relativistic Mott insulator Sr2IrO4 using fully relativistic and magnetically noncollinear density functional theory with the inclusion of an on-site Hubbard U . To model doping effects, we have adopted the supercell approach, that allows for a realistic treatment of structural relaxations and electronic effects beyond a purely rigid band approach. By means of the band unfolding technique we have computed the spectral function and constructed the effective band structure and Fermi surface (FS) in the primitive cell, which are readily comparable with available experimental data. Our calculations clearly indicate that La and Rh doping can be interpreted as effective electron and (fractional) hole doping, respectively. We found that both electron and hole doping induce an insulating-to-metal transition (IMT) but with different characteristics. In Sr2 -xLaxIrO4 the IMT is accompanied by a moderate renormalization of the electronic correlation substantiated by a reduction of the effective on-site Coulomb repulsion U -J from 1.6 eV (x =0 ) to 1.4 eV (metallic regime of x =12.5 % ). The progressive closing of the relativistic Mott gap leads to the emergence of connected elliptical electron pockets at (π /2 ,π /2 ) and less intense features at X on the Fermi surface. The average ordered magnetic moment is slightly reduced upon doping, but the canted antiferromagnetic state is perturbed on the Ir-O planes located near the La atoms. The substitution of Ir with the nominally isovalent Rh is accompanied by a substantial hole transfer from the Rh site to the nearest-neighbor Ir sites. This shifts down the chemical potential, creates almost circular disconnected hole pockets in the FS, and establishes the emergence of a two-dimensional metallic state formed by conducting Rh planes intercalated by insulating Ir planes. Finally, our data indicate that hole doping causes a flipping

  3. Optical conductivity measurements of GaTa4Se8 under high pressure: evidence of a bandwidth-controlled insulator-to-metal Mott transition.

    Science.gov (United States)

    Ta Phuoc, V; Vaju, C; Corraze, B; Sopracase, R; Perucchi, A; Marini, C; Postorino, P; Chligui, M; Lupi, S; Janod, E; Cario, L

    2013-01-18

    The optical properties of a GaTa(4)Se(8) single crystal are investigated under high pressure. At ambient pressure, the optical conductivity exhibits a charge gap of ≈0.12 eV and a broad midinfrared band at ≈0.55 eV. As pressure is increased, the low energy spectral weight is strongly enhanced and the optical gap is rapidly filled, pointing to an insulator to metal transition around 6 GPa. The overall evolution of the optical conductivity demonstrates that GaTa(4)Se(8) is a Mott insulator which undergoes a bandwidth-controlled Mott metal-insulator transition under pressure, in remarkably good agreement with theory. With the use of our optical data and ab initio band structure calculations, our results were successfully compared to the (U/D, T/D) phase diagram predicted by dynamical mean field theory for strongly correlated systems.

  4. The Mott metal-insulator transition in half-filled two-dimensional Hubbard models

    Directory of Open Access Journals (Sweden)

    Peyman Sahebsara

    2008-06-01

    Full Text Available We study the Mott transition in the two dimensional Hubbard model by using the variational cluster approximation. The transition potential obtained is roughly Uc ≈ 2 and 6 for square and triangular lattices, respectively. A comparison between results of this approximation and other quantum cluster methods is presented. Our zero-temperature calculation at strong coupling show that the transition on the triangular and square lattices occur at lower values of compared with other numerical techniques such as DMFT, CDMFT, and DCA. We also study the thermodynamic limit by an extrapolation to infinite size.

  5. Magnetism and the low-energy electronic structure of Mott insulators K{sub 2}CoF{sub 4} and SrMnO{sub 3} perovskites

    Energy Technology Data Exchange (ETDEWEB)

    Nalecz, D.M., E-mail: sfnalecz@cyf-kr.edu.pl [Institute of Physics, Pedagogical University, 30-084, Krakow (Poland); Radwanski, R.J. [Institute of Physics, Pedagogical University, 30-084, Krakow (Poland); Center of Solid State Physics, S" n" t Filip 5, 31-150, Krakow (Poland); Ropka, Z. [Center of Solid State Physics, S" n" t Filip 5, 31-150, Krakow (Poland)

    2016-09-01

    For Mott insulators, K{sub 2}CoF{sub 4} and SrMnO{sub 3}, we have calculated, in the purely ionic model, the low-energy electronic structure both in the paramagnetic and magnetic state as well as zero-temperature magnetic moment, its direction and its temperature dependence. We have calculated the octahedral crystal-field strength 10Dq to be 0.98 and 2.25 eV. We claim that for an adequate theoretical description of magnetic properties even small local distortions and the intra-atomic relativistic spin-orbit coupling have to be taken into account. Our studies have revealed a strong interplay of the magnetism, the orbital moment in particular, with the local crystallographic structure. The calculated orbital moment in K{sub 2}CoF{sub 4} is very large, 1.06 μ{sub B}, giving 30% contribution to the total moment - this result points the necessity to “unquench” the orbital magnetism in 3d compounds. We consistently described magnetic and some optical properties of these compounds, containing atoms with incomplete 3d shell, in agreement with their insulating ground state. - Highlights: • The octahedral crystal-field 10Dq amounts to 0.98 and 2.25 eV in K{sub 2}CoF{sub 4} and SrMnO{sub 3}. • The low-energy electronic structures in the magnetic state is displayed. • There is a strong interplay of the magnetism and the local crystal structure. • Temperature dependence of the Mn{sup 4+}- ion magnetic moment has been described. • Relativistic spin-orbit coupling is indispensable for description of 3d magnetism.

  6. Fingerprints of Mott Superconductivity

    Institute of Scientific and Technical Information of China (English)

    王强华

    2003-01-01

    We improve a previous theory of doped Mott insulators with duality between pairing and magnetism by a further duality transform. As the result we obtained a quantum Ginzburg-Landau theory describing the Cooper pair condensate and the dual of spin condensate. We address the superconductivity by doping a Mott insulator,which we call the Mott superconductivity. Some fingerprints of such novelty in cuprates are the scaling between neutron resonance energy and superfluid density, and the induced quantized spin moment by vortices or Zn impurity (together with circulating charge super-current to be checked by experiments).

  7. Two-dimensional superconductivity at a Mott insulator/band insulator interface LaTiO3/SrTiO3.

    Science.gov (United States)

    Biscaras, J; Bergeal, N; Kushwaha, A; Wolf, T; Rastogi, A; Budhani, R C; Lesueur, J

    2010-10-05

    Transition metal oxides show a great variety of quantum electronic behaviours where correlations often have an important role. The achievement of high-quality epitaxial interfaces involving such materials gives a unique opportunity to engineer artificial structures where new electronic orders take place. One of the most striking result in this area is the recent observation of a two-dimensional electron gas at the interface between a strongly correlated Mott insulator LaTiO(3) and a band insulator SrTiO(3). The mechanism responsible for such a behaviour is still under debate. In particular, the influence of the nature of the insulator has to be clarified. In this article, we show that despite the expected electronic correlations, LaTiO(3)/SrTiO(3) heterostructures undergo a superconducting transition at a critical temperature T(c)(onset)~300 mK. We have found that the superconducting electron gas is confined over a typical thickness of 12 nm and is located mostly on the SrTiO(3) substrate.

  8. Mott physics and collective modes: An atomic approximation of the four-particle irreducible functional

    Science.gov (United States)

    Ayral, Thomas; Parcollet, Olivier

    2016-08-01

    We discuss a generalization of the dynamical mean field theory (DMFT) for strongly correlated systems close to a Mott transition based on a systematic approximation of the fully irreducible four-point vertex. It is an atomic-limit approximation of a functional of the one- and two-particle Green functions, built with the second Legendre transform of the free energy with respect to the two-particle Green function. This functional is represented diagrammatically by four-particle irreducible (4PI) diagrams. Like the dynamical vertex approximation (D Γ A ), the fully irreducible vertex is computed from a quantum impurity model whose bath is self-consistently determined by solving the parquet equations. However, in contrast with D Γ A and DMFT, the interaction term of the impurity model is also self-consistently determined. The method interpolates between the parquet approximation at weak coupling and the atomic limit, where it is exact. It is applicable to systems with short-range and long-range interactions.

  9. Resistivity investigations on the X-ray irradiated Mott insulator {kappa}-(ET){sub 2}Cu[N(CN){sub 2}]Cl

    Energy Technology Data Exchange (ETDEWEB)

    Naji, Ammar; Tutsch, Ulrich; Lang, Michael [Physikalisches Institut, Goethe-Universitaet Frankfurt (M), SFB/TRR49, D-60438 Frankfurt am Main (Germany); Sasaki, Takahiko [Institute for Material Research, Tohoku University, 2-1-1 Katahira, Aoba-ku, Sendai, Miyagi 980-8577 (Japan)

    2009-07-01

    The compound {kappa}-(ET){sub 2}Cu[N(CN){sub 2}]Cl is a two- dimensionally structured organic material with a rich pressure vs. temperature phase diagram including paramagnetic and antiferromagnetic Mott-insulating states as well as metallic, semiconducting and superconducting phases, see e.g. We used X-ray irradiation to induce defects in the material and by this change the charge distribution between anion- and ET-layers. The smaller resistivity of the irradiated samples compared to non-irradiated ones supports this idea. As a consequence, X-ray irradiation may provide a means for doping the Mott-insulator away from half-filling. We present resistivity data for the temperature range 5 K{<=}T{<=}60 K and pressures up to 50 MPa from which the p-T-phase diagram of X-ray irradiated {kappa}-(ET){sub 2}Cu[N(CN){sub 2}]Cl is extracted.

  10. Scaling at the Mott-Hubbard metal-insulator transition in yttrium hydride

    CERN Document Server

    Hoekstra, A F T; Rosenbaum, T F

    2003-01-01

    A single yttrium hydride thin film is conveniently driven through the T 0 metal-insulator transition by fine-tuning the charge carrier density n via persistent photoconductivity at low temperature. Simultaneously, electrical conductivity and Hall measurements are performed for temperatures T down to 350 mK and magnetic fields up to 14 T. A scaling analysis is applied and critical exponents, resolved separately on the metallic and insulating sides of the critical region, are determined consistently. We introduce corrections to scaling to invoke collapse of the data onto a single master curve over an extended region of the (n, T) phase diagram.

  11. Wave Permanent Functions for Featureless Bosonic Mott Insulators on the 1/3-Filled Kagome Lattice

    NARCIS (Netherlands)

    Parameswaran, S.A.; Kimchi, I.; Turner, A.M.; Stamper-Kurn, D.M.; Vishwanath, A.

    2013-01-01

    We study Bose-Hubbard models on tight-binding, non-Bravais lattices, with a filling of one boson per unit cell—and thus fractional site filling. We discuss situations where no classical bosonic insulator, which is a product state of particles on independent sites, is admitted. Nevertheless, we show

  12. Direct probe of Mott-Hubbard to charge-transfer insulator transition and electronic structure evolution in transition-metal systems

    Energy Technology Data Exchange (ETDEWEB)

    Olalde-Velasco, P; Jimenez-Mier, J; Denlinger, JD; Hussain, Z; Yang, WL

    2011-07-11

    We report the most direct experimental verification of Mott-Hubbard and charge-transfer insulators through x-ray emission spectroscopy in transition-metal (TM) fluorides. The p-d hybridization features in the spectra allow a straightforward energy alignment of the anion-2p and metal-3d valence states, which visually shows the difference between the two types of insulators. Furthermore, in parallel with the theoretical Zaanen-Sawatzky-Allen diagram, a complete experimental systematics of the 3d Coulomb interaction and the 2p-3d charge-transfer energy is reported and could serve as a universal experimental trend for other TM systems including oxides.

  13. Antagonistic effects of nearest-neighbor repulsion on the superconducting pairing dynamics in the doped Mott insulator regime

    Science.gov (United States)

    Reymbaut, A.; Charlebois, M.; Asiani, M. Fellous; Fratino, L.; Sémon, P.; Sordi, G.; Tremblay, A.-M. S.

    2016-10-01

    The nearest-neighbor superexchange-mediated mechanism for dx2-y2 superconductivity in the one-band Hubbard model faces the challenge that nearest-neighbor Coulomb repulsion can be larger than superexchange. To answer this question, we use cellular dynamical mean-field theory (CDMFT) with a continuous-time quantum Monte Carlo solver to determine the superconducting phase diagram as a function of temperature and doping for on-site repulsion U =9 t and nearest-neighbor repulsion V =0 ,2 t ,4 t . In the underdoped regime, V increases the CDMFT superconducting transition temperature Tcd even though it decreases the superconducting order parameter at low temperature for all dopings. However, in the overdoped regime V decreases Tcd. We gain insight into these paradoxical results through a detailed study of the frequency dependence of the anomalous spectral function, extracted at finite temperature via the MaxEntAux method for analytic continuation. A systematic study of dynamical positive and negative contributions to pairing reveals that even though V has a high-frequency depairing contribution, it also has a low frequency pairing contribution since it can reinforce superexchange through J =4 t2/(U -V ) . Retardation is thus crucial to understanding pairing in doped Mott insulators, as suggested by previous zero-temperature studies. We also comment on the tendency to charge order for large V and on the persistence of d -wave superconductivity over extended-s or s +d wave.

  14. Low-energy magnon dynamics and magneto-optics of the skyrmionic Mott insulator Cu2OSeO3

    Science.gov (United States)

    Laurita, N. J.; Marcus, G. G.; Trump, B. A.; Kindervater, J.; Stone, M. B.; McQueen, T. M.; Broholm, C. L.; Armitage, N. P.

    2017-06-01

    In this paper, we present a comprehensive study of the low-energy optical magnetic response of the skyrmionic Mott insulator Cu2OSeO3 via high resolution time-domain THz spectroscopy. In zero field, a new magnetic excitation (f0=2.03 THz ) which has not been predicted by spin-wave theory is observed and shown, with accompanying time-of-flight neutron scattering experiments, to be a zone folded magnon from the R to Γ points of the Brillouin zone. Highly sensitive polarimetry experiments performed in weak magnetic fields, μ0H 5 T , we observe the magnetically active uniform mode of the ferrimagnetic field polarized phase whose dynamics as a function of field and temperature are studied. In addition to extracting a geff=2.08 ±0.03 , we observe the uniform mode to decay through a non-Gilbert damping mechanism and to possess a finite spontaneous decay rate, Γ0≈25 GHz , in the zero temperature limit. Our observations are attributed to Dzyaloshinkii-Moriya interactions, which have been proposed to be exceptionally strong in Cu2OSeO3 and are expected to impact the low-energy magnetic response of such chiral magnets.

  15. Magnetic properties in the Mott-insulating iron oxychalcogenides La2 O 2 Fe 2 OSe 2

    Science.gov (United States)

    Zhu, Jian-Xin; Yu, Rong; Si, Qimiao

    2011-03-01

    The role of electron correlation and magnetism in high-temperature superconductivity of the iron pnictides has been a topic of discussion. It has also motivated interest to compare related compounds with the iron pnictides and chalcogenides. Recently both electronic structure calculations and experimental measurements have indicated that the iron oxychalcogenides La 2 O2 Fe 2 OSe 2 , which contains an Fe square lattice with an enlarged unit cell, has a larger U/t and is a Mott insulator. We focus here on the understanding of the magnetism of this system. Within the density functional theory, we consider the magnetic phase diagram. Using an effective frustrating spin-exchange model in a doubled checker-board lattice, we study the magnetic excitation spectrum. Our theoretical results are compared with the emerging elastic and inelastic neutron scattering data in this compound. This work was supported by the NNSA of the U.S. DOE at LANL under Contract No. DE-AC52-06NA25396 (J.X.Z), the NSF Grant No. DMR-0706625, the Robert A. Welch Foundation Grant No. C-1411, and the W. M. Keck Foundation (R.Y. and Q.S.).

  16. Impurity-induced transition to a Mott insulator in Sr3 Ru2 O7

    Science.gov (United States)

    Mathieu, R.; Asamitsu, A.; Kaneko, Y.; He, J. P.; Yu, X. Z.; Kumai, R.; Onose, Y.; Takeshita, N.; Arima, T.; Takagi, H.; Tokura, Y.

    2005-09-01

    The electrical, magnetic, and structural properties of Sr3(Ru1-xMnx)2O7(0⩽x⩽0.2) are investigated. The parent compound Sr3Ru2O7 is a paramagnetic metal, critically close to magnetic order. We have found that, with a Ru-site doping by only a few percent of Mn, the ground state is switched from a paramagnetic metal to an antiferromagnetic insulator. Optical conductivity measurements show the opening of a gap as large as 0.1 eV, indicating that the metal-to-insulator transition is driven by the electron correlation. The complex low-temperature antiferromagnetic spin arrangement, reminiscent of those observed in some nickelates and manganites, suggests a long-range orbital order.

  17. Size and symmetry of the superconducting gap in the f.c.c. Cs3C60 polymorph close to the metal-Mott insulator boundary.

    Science.gov (United States)

    Potočnik, Anton; Krajnc, Andraž; Jeglič, Peter; Takabayashi, Yasuhiro; Ganin, Alexey Y; Prassides, Kosmas; Rosseinsky, Matthew J; Arčon, Denis

    2014-03-03

    The alkali fullerides, A(3)C(60) (A = alkali metal) are molecular superconductors that undergo a transition to a magnetic Mott-insulating state at large lattice parameters. However, although the size and the symmetry of the superconducting gap, Δ, are both crucial for the understanding of the pairing mechanism, they are currently unknown for superconducting fullerides close to the correlation-driven magnetic insulator. Here we report a comprehensive nuclear magnetic resonance (NMR) study of face-centred-cubic (f.c.c.) Cs(3)C(60) polymorph, which can be tuned continuously through the bandwidth-controlled Mott insulator-metal/superconductor transition by pressure. When superconductivity emerges from the insulating state at large interfullerene separations upon compression, we observe an isotropic (s-wave) Δ with a large gap-to-superconducting transition temperature ratio, 2Δ0/k(B)T(c) = 5.3(2) [Δ0 = Δ(0 K)]. 2Δ0/k(B)T(c) decreases continuously upon pressurization until it approaches a value of ~3.5, characteristic of weak-coupling BCS theory of superconductivity despite the dome-shaped dependence of Tc on interfullerene separation. The results indicate the importance of the electronic correlations for the pairing interaction as the metal/superconductor-insulator boundary is approached.

  18. Electrostatic doping of a Mott insulator in an oxide heterostructure: the case of LaVO{sub 3}/SrTiO{sub 3}

    Energy Technology Data Exchange (ETDEWEB)

    Mueller, Andreas; Pfaff, Florian; Sing, Michael; Claessen, Ralph [Physikalisches Insititut and Roentgen Research Center for Complex Material Systems, Universitaet Wuerzburg, D-97074 Wuerzburg (Germany); Boschker, Hans; Kamp, Martin; Koster, Gertjan; Rijnders, Guus [Faculty of Science and Technology and MESA-plus Institute for Nanotechnology, University of Twente, 7500 AE Enschede (Netherlands)

    2012-07-01

    The discovery of a quasi-two-dimensional electron system at the interface between the two band insulators LaAlO{sub 3} and SrTiO{sub 3} has triggered intense investigations of oxide heterostructures with other material combinations. The hope is that by combining a polar overlayer with a non-polar substrate electronic reconstruction will lead to highly mobile interface charge carriers with special properties. The formation of a conducting interface layer in epitaxial LaVO{sub 3}/SrTiO{sub 3}, where LaVO{sub 3} is a Mott insulator, is studied by transport measurements and hard X-ray photoelectron spectroscopy. We identify an insulator-to-metal transition above a critical LaVO{sub 3} thickness with transport properties similar to those recently reported for LaAlO{sub 3}/SrTiO{sub 3} interfaces. Interestingly, our photoemission measurements give evidence that electronic charge is transferred exclusively to the LaVO{sub 3}-side of the interface caused by an electronic reconstruction within the film itself. This opens the opportunity to study a band-filling controlled Mott transition induced by a purely electrostatic mechanism.

  19. Disappearance of Mott oscillations in sub-barrier elastic scattering of identical nuclei and atomic ions

    CERN Document Server

    Hussein, M S; Donangelo, R; Mittig, W

    2015-01-01

    The scattering of identical nuclei at low energies exhibits conspicuous Mott oscillations which can be used to investigate the presence of components in the predominantly Coulomb interaction arising from several physical effects. It is found that at a certain critical value of the Sommerfeld parameter the Mott oscillations disappear and the cross section becomes quite flat. We call this effect Transverse Isotropy (TI). The critical value of the Sommerfeld parameter at which TI sets in is found to be $\\eta_{c} = \\sqrt{3s +2}$, where $s$ is the spin of the nuclei participating in the scattering. No TI is found in the Mott scattering of identical Fermionic nuclei. The critical center of mass energy corresponding to $\\eta_c$ is found to be $E_c$ = 0.40 MeV for $\\alpha + \\alpha$ (s = 0) , 1.2 MeV for $^{6}$Li + $^{6}$LI (s = 1) and 7.1 MeV for $^{10}$B + $^{10}$B (s = 3). We further found that the inclusion of the nuclear interaction induces a significant modification in the TI. We suggest measurements at these su...

  20. Ultrafast energy and momentum resolved dynamics of magnetic correlations in photo-doped Mott insulator Sr2IrO4

    Energy Technology Data Exchange (ETDEWEB)

    Dean, M. P. M.; Cao, Yue; Liu, X.; Wall, S.; Zhu, D.; Mankowsky, R.; Thampy, V.; Chen, X. M.; Vale, J. G.; Casa, D.; Kim, Jungho; Said, A. H.; Juhas, P.; Alonso-Mori, R.; Glownia, J. M.; Robert, A.; Robinson, J.; Sikorski, M.; Song, S.; Kozina, M.; Lemke, H.; Patthey, L; Owada, S.; Katayama, T.; Yabashi, M.; Tanaka, Yoshikazu; Togashi, T.; Liu, Jian; Rayan-Serrao, C.; Kim, B. J.; Huber, L.; Chang, C. -L; McMorrow, D. F.; Forst, M.; Hill, J. P.

    2016-06-01

    Measuring how the magnetic correlations throughout the Brillouin zone evolve in a Mott insulator as charges are introduced dramatically improved our understanding of the pseudogap, non-Fermi liquids and high TC superconductivity. Recently, photoexcitation has been used to induce similarly exotic states transiently. However, understanding how these states emerge has been limited because of a lack of available probes of magnetic correlations in the time domain, which hinders further investigation of how light can be used to control the properties of solids. Here we implement magnetic resonant inelastic X-ray scattering at a free electron laser, and directly determine the magnetization dynamics after photo-doping the Mott insulator Sr2IrO4. We find that the non-equilibrium state 2~ps after the excitation has strongly suppressed long-range magnetic order, but hosts photo-carriers that induce strong, non-thermal magnetic correlations. The magnetism recovers its two-dimensional (2D) in-plane N\\'eel correlations on a timescale of a few ps, while the three-dimensional (3D) long-range magnetic order restores over a far longer, fluence-dependent timescale of a few hundred ps. The dramatic difference in these two timescales, implies that characterizing the dimensionality of magnetic correlations will be vital in our efforts to understand ultrafast magnetic dynamics.

  1. Ultrafast energy- and momentum-resolved dynamics of magnetic correlations in the photo-doped Mott insulator Sr2IrO4.

    Science.gov (United States)

    Dean, M P M; Cao, Y; Liu, X; Wall, S; Zhu, D; Mankowsky, R; Thampy, V; Chen, X M; Vale, J G; Casa, D; Kim, Jungho; Said, A H; Juhas, P; Alonso-Mori, R; Glownia, J M; Robert, A; Robinson, J; Sikorski, M; Song, S; Kozina, M; Lemke, H; Patthey, L; Owada, S; Katayama, T; Yabashi, M; Tanaka, Yoshikazu; Togashi, T; Liu, J; Rayan Serrao, C; Kim, B J; Huber, L; Chang, C-L; McMorrow, D F; Först, M; Hill, J P

    2016-06-01

    Measuring how the magnetic correlations evolve in doped Mott insulators has greatly improved our understanding of the pseudogap, non-Fermi liquids and high-temperature superconductivity. Recently, photo-excitation has been used to induce similarly exotic states transiently. However, the lack of available probes of magnetic correlations in the time domain hinders our understanding of these photo-induced states and how they could be controlled. Here, we implement magnetic resonant inelastic X-ray scattering at a free-electron laser to directly determine the magnetic dynamics after photo-doping the Mott insulator Sr2IrO4. We find that the non-equilibrium state, 2 ps after the excitation, exhibits strongly suppressed long-range magnetic order, but hosts photo-carriers that induce strong, non-thermal magnetic correlations. These two-dimensional (2D) in-plane Néel correlations recover within a few picoseconds, whereas the three-dimensional (3D) long-range magnetic order restores on a fluence-dependent timescale of a few hundred picoseconds. The marked difference in these two timescales implies that the dimensionality of magnetic correlations is vital for our understanding of ultrafast magnetic dynamics.

  2. Ultrafast energy- and momentum-resolved dynamics of magnetic correlations in the photo-doped Mott insulator Sr2IrO4

    Science.gov (United States)

    Dean, M. P. M.; Cao, Y.; Liu, X.; Wall, S.; Zhu, D.; Mankowsky, R.; Thampy, V.; Chen, X. M.; Vale, J. G.; Casa, D.; Kim, Jungho; Said, A. H.; Juhas, P.; Alonso-Mori, R.; Glownia, J. M.; Robert, A.; Robinson, J.; Sikorski, M.; Song, S.; Kozina, M.; Lemke, H.; Patthey, L.; Owada, S.; Katayama, T.; Yabashi, M.; Tanaka, Yoshikazu; Togashi, T.; Liu, J.; Rayan Serrao, C.; Kim, B. J.; Huber, L.; Chang, C.-L.; McMorrow, D. F.; Först, M.; Hill, J. P.

    2016-06-01

    Measuring how the magnetic correlations evolve in doped Mott insulators has greatly improved our understanding of the pseudogap, non-Fermi liquids and high-temperature superconductivity. Recently, photo-excitation has been used to induce similarly exotic states transiently. However, the lack of available probes of magnetic correlations in the time domain hinders our understanding of these photo-induced states and how they could be controlled. Here, we implement magnetic resonant inelastic X-ray scattering at a free-electron laser to directly determine the magnetic dynamics after photo-doping the Mott insulator Sr2IrO4. We find that the non-equilibrium state, 2 ps after the excitation, exhibits strongly suppressed long-range magnetic order, but hosts photo-carriers that induce strong, non-thermal magnetic correlations. These two-dimensional (2D) in-plane Néel correlations recover within a few picoseconds, whereas the three-dimensional (3D) long-range magnetic order restores on a fluence-dependent timescale of a few hundred picoseconds. The marked difference in these two timescales implies that the dimensionality of magnetic correlations is vital for our understanding of ultrafast magnetic dynamics.

  3. Angle Resolved Photoemission Spectroscopy Studies of the Mott Insulator to Superconductor Evolution in Ca2-xNaxCuO2Cl2

    Energy Technology Data Exchange (ETDEWEB)

    Shen, Kyle Michael

    2005-09-02

    It is widely believed that many of the exotic physical properties of the high-T{sub c} cuprate superconductors arise from the proximity of these materials to the strongly correlated, antiferromagnetic Mott insulating state. Therefore, one of the fundamental questions in the field of high-temperature superconductivity is to understand the insulator-to-superconductor transition and precisely how the electronic structure of Mott insulator evolves as the first holes are doped into the system. This dissertation presents high-resolution, doping dependent angle-resolved photoemission (ARPES) studies of the cuprate superconductor Ca{sub 2-x}Na{sub x}CuO{sub 2}Cl{sub 2}, spanning from the undoped parent Mott insulator to a high-temperature superconductor with a T{sub c} of 22 K. A phenomenological model is proposed to explain how the spectral lineshape, the quasiparticle band dispersion, and the chemical potential all progress with doping in a logical and self-consistent framework. This model is based on Franck-Condon broadening observed in polaronic systems where strong electron-boson interactions cause the quasiparticle residue, Z, to be vanishingly small. Comparisons of the low-lying states to different electronic states in the valence band strongly suggest that the coupling of the photohole to the lattice (i.e. lattice polaron formation) is the dominant broadening mechanism for the lower Hubbard band states. Combining this polaronic framework with high-resolution ARPES measurements finally provides a resolution to the long-standing controversy over the behavior of the chemical potential in the high-T{sub c} cuprates. This scenario arises from replacing the conventional Fermi liquid quasiparticle interpretation of the features in the Mott insulator by a Franck-Condon model, allowing the reassignment of the position of the quasiparticle pole. As a function of hole doping, the chemical potential shifts smoothly into the valence band while spectral weight is transferred

  4. Transition from Mott insulator to superconductor in GaNb4Se8 and GaTa4Se8 under high pressure.

    Science.gov (United States)

    Abd-Elmeguid, M M; Ni, B; Khomskii, D I; Pocha, R; Johrendt, D; Wang, X; Syassen, K

    2004-09-17

    Electronic conduction in GaM4Se8 (M=Nb,Ta) compounds with the fcc GaMo4S8-type structure originates from hopping of localized unpaired electrons (S=1 / 2) among widely separated tetrahedral M4 metal clusters. We show that under pressure these systems transform from Mott insulators to a metallic and superconducting state with T(C)=2.9 and 5.8 K at 13 and 11.5 GPa for GaNb4Se8 and GaTa4Se8, respectively. The occurrence of superconductivity is shown to be connected with a pressure-induced decrease of the MSe6 octahedral distortion and simultaneous softening of the phonon associated with M-Se bonds.

  5. Electric-field-induced intradimer charge disproportionation in the dimer-Mott insulator β'-(BEDT-TTF ) 2IC l2

    Science.gov (United States)

    Hattori, Yuma; Iguchi, Satoshi; Sasaki, Takahiko; Iwai, Shinichiro; Taniguchi, Hiromi; Kishida, Hideo

    2017-02-01

    Raman scattering spectra of the dimer-Mott insulator β'-(BEDT-TTF ) 2IC l2 [BEDT-TTF = bis(ethylenedithio)tetrathiafulvalene] under a static electric field are investigated. The application of the electric field induces two additional Raman peaks on both sides of the original peak position of the charge-sensitive Raman mode (ν2) in the spectra. At 10 kV/cm, the original peak almost disappears and only the newly emerging peaks are observed. The emergence of these peaks indicates the field-induced charge disproportionation within the dimer. The temporal change of the Raman signals with the inversion of the electric field suggests a macroscopic domain formation of the charge-disproportionate dimers. This picture is reinforced by the direct measurement of the polarization.

  6. Spectral properties of the Mott Hubbard insulator (Cr{sub 0.011}V{sub 0.989}){sub 2}O{sub 3} calculated by LDA+DMFT

    Energy Technology Data Exchange (ETDEWEB)

    Toschi, A; Hansmann, P; Sangiovanni, G; Held, K [Institut fuer Festkoerperphysik, Technische Universitaet Wien, Vienna (Austria); Saha-Dasgupta, T [S.N.Bose National Centre for Basic Sciences, Salt Lake, Kolkata (India); Andersen, O K, E-mail: toschi@ifp.tuwien.ac.a [Max-Planck-Institut fuer Festkoerperforschung, Stuttgart (Germany)

    2010-01-15

    Significant progress in the theoretical description of Mott-Hubbard metal-to-insulator transitions has been made in the last years, especially thanks to the LDA+DMFT approach (local density approximation + dynamical mean field theory). Obviously the main attention has been focused on the transition itself, as, for example, in the textbook case of the Cr-doped V{sub 2}O{sub 3}. As we discuss here, however, also the study of the insulating phase, characterized by the opening of a visible Mott-Hubbard gap in the spectral functions is far from being trivial: Strong-correlation effects make this phase strongly sensitive to small changes of external parameters, much more than one would expect for an insulator. In this situation, requiring a full consistency of the theoretical calculations with data from different spectroscopies may provide the most precise estimate for the local Coulomb interaction U in the LDA+DMFT approach.

  7. Deciphering Adsorption Structure on Insulators at the Atomic Scale

    Energy Technology Data Exchange (ETDEWEB)

    Thurmer, Konrad [Sandia National Lab. (SNL-CA), Livermore, CA (United States). Materials Physics; Feibelman, Peter J. [Sandia National Lab. (SNL-CA), Livermore, CA (United States). Integrated Nanotechnologies

    2014-09-01

    We applied Scanning Probe Microscopy and Density Functional Theory (DFT) to discover the basics of how adsorbates wet insulating substrates, addressing a key question in geochemistry. To allow experiments on insulating samples we added Atomic Force Microscopy (AFM) capability to our existing UHV Scanning Tunneling Microscope (STM). This was accomplished by integrating and debugging a commercial qPlus AFM upgrade. Examining up-to-40-nm-thick water films grown in vacuum we found that the exact nature of the growth spirals forming around dislocations determines what structure of ice, cubic or hexagonal, is formed at low temperature. DFT revealed that wetting of mica is controlled by how exactly a water layer wraps around (hydrates) the K+ ions that protrude from the mica surface. DFT also sheds light on the experimentally observed extreme sensitivity of the mica surface to preparation conditions: K atoms can easily be rinsed off by water flowing past the mica surface.

  8. Vector chirality for effective total momentum Jeff in a nonfrustrated Mott insulator: Effects of strong spin-orbit coupling and broken inversion symmetry

    Science.gov (United States)

    Arakawa, Naoya

    2016-11-01

    I propose the emergence of the spin-orbital-coupled vector chirality in a nonfrustrated Mott insulator with the strong spin-orbit coupling due to a b -plane's inversion-symmetry (IS) breaking. I derive the superexchange interactions for a t2 g-orbital Hubbard model on a square lattice with the strong spin-orbit coupling and the IS-breaking-induced hopping integrals, and explain the microscopic origins of the Dzyaloshinsky-Moriya (DM) -type and the Kitaev-type interactions. Then, by adopting the mean-field approximation to a minimal model including only the Heisenberg-type and the DM-type nearest-neighbor interactions, I show that the IS breaking causes the spin-orbital-coupled chirality as a result of stabilizing the screw state. I also highlight the limit of the hard-pseudospin approximation in discussing the stability of the screw states in the presence of both the DM-type and the Kitaev-type interactions, and discuss its meaning. I finally discuss the effects of tetragonal crystal field and Jeff=3/2 states, and the application to the iridates near the [001 ] surface of Sr2IrO4 and the interface between Sr2IrO4 and Sr3Ir2O7 .

  9. Large Fermi Surface of Heavy Electrons at the Border of Mott Insulating State in NiS2

    OpenAIRE

    S. Friedemann; Chang, H; Gamza, M; Reiss, P.; Chen, X; Alireza, P.; Coniglio, WA; Graf, D.; Tozer, S; Grosche, FM

    2016-01-01

    This is the author accepted manuscript. It is currently under an indefinite embargo pending publication by Nature Publishing Group. One early triumph of quantum physics is the explanation why some materials are metallic whereas others are insulating. While a treatment based on single electron states is correct for most materials this approach can fail spectacularly, when the electrostatic repulsion between electrons causes strong correlations. Not only can these favor new and subtle forms ...

  10. Magnetic correlations and quantum criticality in the insulating antiferromagnetic, insulating spin liquid, renormalized Fermi liquid, and metallic antiferromagnetic phases of the Mott system V2O3

    Science.gov (United States)

    Bao, Wei; Broholm, C.; Aeppli, G.; Carter, S. A.; Dai, P.; Rosenbaum, T. F.; Honig, J. M.; Metcalf, P.; Trevino, S. F.

    1998-11-01

    Magnetic correlations in all four phases of pure and doped vanadium sesquioxide (V2O3) have been examined by magnetic thermal-neutron scattering. Specifically, we have studied the antiferromagnetic and paramagnetic phases of metallic V2-yO3, the antiferromagnetic insulating and paramagnetic metallic phases of stoichiometric V2O3, and the antiferromagnetic and paramagnetic phases of insulating V1.944Cr0.056O3. While the antiferromagnetic insulator can be accounted for by a localized Heisenberg spin model, the long-range order in the antiferromagnetic metal is an incommensurate spin-density wave, resulting from a Fermi surface nesting instability. Spin dynamics in the strongly correlated metal are dominated by spin fluctuations with a ``single lobe'' spectrum in the Stoner electron-hole continuum. Furthermore, our results in metallic V2O3 represent an unprecedentedly complete characterization of the spin fluctuations near a metallic quantum critical point, and provide quantitative support for the self-consistent renormalization theory for itinerant antiferromagnets in the small moment limit. Dynamic magnetic correlations for ħωinsulator carry substantial magnetic spectral weight. However, they are extremely short-ranged, extending only to the nearest neighbors. The phase transition to the antiferromagnetic insulator, from the paramagnetic metal and the paramagnetic insulator, introduces a sudden switching of magnetic correlations to a different spatial periodicity which indicates a sudden change in the underlying spin Hamiltonian. To describe this phase transition and also the unusual short-range order in the paramagnetic state, it seems necessary to take into account the orbital degrees of freedom associated with the degenerate d orbitals at the Fermi level in V2O3.

  11. Mott transitions in the periodic Anderson model

    Science.gov (United States)

    Logan, David E.; Galpin, Martin R.; Mannouch, Jonathan

    2016-11-01

    The periodic Anderson model (PAM) is studied within the framework of dynamical mean-field theory, with particular emphasis on the interaction-driven Mott transition it contains, and on resultant Mott insulators of both Mott-Hubbard and charge-transfer type. The form of the PAM phase diagram is first deduced on general grounds using two exact results, over the full range of model parameters and including metallic, Mott, Kondo and band insulator phases. The effective low-energy model which describes the PAM in the vicinity of a Mott transition is then shown to be a one-band Hubbard model, with effective hoppings that are not in general solely nearest neighbour, but decay exponentially with distance. This mapping is shown to have a range of implications for the physics of the problem, from phase boundaries to single-particle dynamics; all of which are confirmed and supplemented by NRG calculations. Finally we consider the locally degenerate, non-Fermi liquid Mott insulator, to describe which requires a two-self-energy description. This is shown to yield a number of exact results for the associated local moment, charge, and interaction-renormalised levels, together with a generalisation of Luttinger’s theorem to the Mott insulator.

  12. B a2NiOs O6 : A Dirac-Mott insulator with ferromagnetism near 100 K

    Science.gov (United States)

    Feng, Hai L.; Calder, Stuart; Ghimire, Madhav Prasad; Yuan, Ya-Hua; Shirako, Yuichi; Tsujimoto, Yoshihiro; Matsushita, Yoshitaka; Hu, Zhiwei; Kuo, Chang-Yang; Tjeng, Liu Hao; Pi, Tun-Wen; Soo, Yun-Liang; He, Jianfeng; Tanaka, Masahiko; Katsuya, Yoshio; Richter, Manuel; Yamaura, Kazunari

    2016-12-01

    The ferromagnetic semiconductor B a2NiOs O6 (Tmag˜100 K ) was synthesized at 6 GPa and 1500 °C. It crystallizes into a double perovskite structure [F m -3 m ; a =8.0428 (1 )Å ], where the N i2 + and O s6 + ions are perfectly ordered at the perovskite B site. We show that the spin-orbit coupling of O s6 + plays an essential role in opening the charge gap. The magnetic state was investigated by density functional theory calculations and powder neutron diffraction. The latter revealed a collinear ferromagnetic order in a >21 kOe magnetic field at 5 K. The ferromagnetic gapped state is fundamentally different from that of known dilute magnetic semiconductors such as (Ga,Mn)As and (Cd,Mn)Te (Tmagsemiconductor M n2CoAl (Tmag˜720 K ), and the ferromagnetic insulators EuO (Tmag˜70 K ) and B i3C r3O11 (Tmag˜220 K ). It is also qualitatively different from known ferrimagnetic insulators and semiconductors, which are characterized by an antiparallel spin arrangement. Our finding of the ferromagnetic semiconductivity of B a2NiOs O6 should increase interest in the platinum group oxides, because this alternative class of materials should be useful in the development of spintronic, quantum magnetic, and related devices.

  13. Single atom anisotropic magnetoresistance on a topological insulator surface

    KAUST Repository

    Narayan, Awadhesh

    2015-03-12

    © 2015 IOP Publishing Ltd and Deutsche Physikalische Gesellschaft. We demonstrate single atom anisotropic magnetoresistance on the surface of a topological insulator, arising from the interplay between the helical spin-momentum-locked surface electronic structure and the hybridization of the magnetic adatom states. Our first-principles quantum transport calculations based on density functional theory for Mn on Bi2Se3 elucidate the underlying mechanism. We complement our findings with a two dimensional model valid for both single adatoms and magnetic clusters, which leads to a proposed device setup for experimental realization. Our results provide an explanation for the conflicting scattering experiments on magnetic adatoms on topological insulator surfaces, and reveal the real space spin texture around the magnetic impurity.

  14. Photonic Floquet Topological Insulator in an Atomic Ensemble

    CERN Document Server

    Zhang, Yiqi; Belić, Milivoj R; Zheng, Huaibin; Wang, Zhiguo; Xiao, Min; Zhang, Yanpeng

    2014-01-01

    We demonstrate the photonic Floquet topological insulator (PFTI) in an atomic vapor with nonlinear susceptibilities. The interference of three coupling fields splits the energy levels periodically to form a periodic refractive index structure with honeycomb symmetry that can be adjusted by the choice of frequency detunings and intensities of the coupling fields, which all affect the appearance of Dirac cones in the momentum space. When the honeycomb lattice sites are helically ordered along the propagation direction, we obtain a PFTI in the atomic vapor in which an obliquely incident beam moves along the zigzag edge without scattering energy into the PFTI, due to the confinement of the edge states. The appearance of Dirac cones and the formation of PFTI is strongly affected by the nonlinear susceptibilities; i.e. the PFTI can be shut off by the third-order nonlinear susceptibility and re-opened up by the fifth-order one.

  15. Photoinduced switching to metallic states in the two-dimensional organic Mott insulator dimethylphenazine-tetrafluorotetracyanoquinodimethane with anisotropic molecular stacks

    Science.gov (United States)

    Matsuzaki, Hiroyuki; Ohkura, Masa-aki; Ishige, Yu; Nogami, Yoshio; Okamoto, Hiroshi

    2015-06-01

    A photoinduced phase transition was investigated in an organic charge-transfer (CT) complex M2P -TCNQ F4 , [M2P : 5,10-dihydro-5,10-dimethylphenazine, donor (D) molecule; TCNQ F4 : 2,3,5,6-tetrafluoro-7,7,8,8-tetracyanoquinodimethane, acceptor (A) molecule] by means of femtosecond pump-probe reflection spectroscopy. This is an ionic compound and has a peculiar two-dimensional (2D) molecular arrangement; the same A (or D) molecules arrange along the [100] direction, and A and D molecules alternately arrange along the [111] direction. It results in a strongly anisotropic two-dimensional electronic structure. This compound shows a structural and magnetic phase transition at 122 K below which the two neighboring molecules are dimerized along both the [100] and [111] directions. We demonstrate that two kinds of photoinduced phase transitions occur by irradiation of a femtosecond laser pulse; in the high-temperature lattice-uniform phase, a quasi-one-dimensional (1D) metallic state along the AA(DD) stack is generated, and in the low-temperature lattice-dimerized phase, a quasi-2D metallic state is initially produced and molecular dimerizations are subsequently released. Mixed-stack CT compounds consisting of DA stacks are generally insulators or semiconductors in the ground state. Here, such a dynamical metallization in the DA stack is demonstrated. The release of the dimerizations drives several kinds of coherent oscillations which play an important role in the stabilization of the lattice-dimerized phase. The mechanisms of those photoinduced phase transitions are discussed in terms of the magnitudes of the anisotropic bandwidths and molecular dimerizations along two different directions of the molecular stacks.

  16. Direct observation of the M2 phase with its Mott transition in a VO2 film

    Science.gov (United States)

    Kim, Hoon; Slusar, Tetiana V.; Wulferding, Dirk; Yang, Ilkyu; Cho, Jin-Cheol; Lee, Minkyung; Choi, Hee Cheul; Jeong, Yoon Hee; Kim, Hyun-Tak; Kim, Jeehoon

    2016-12-01

    In VO2, the explicit origin of the insulator-to-metal transition is still disputable between Peierls and Mott insulators. Along with the controversy, its second monoclinic (M2) phase has received considerable attention due to the presence of electron correlation in undimerized vanadium ions. However, the origin of the M2 phase is still obscure. Here, we study a granular VO2 film using conductive atomic force microscopy and Raman scattering. Upon the structural transition from monoclinic to rutile, we observe directly an intermediate state showing the coexistence of monoclinic M1 and M2 phases. The conductivity near the grain boundary in this regime is six times larger than that of the grain core, producing a donut-like landscape. Our results reveal an intra-grain percolation process, indicating that VO2 with the M2 phase is a Mott insulator.

  17. Unveiling the Origin of the Basal-plane Antiferromagnetism in the Jeff = 1 / 2 Mott Insulator Ba2IrO4: A Density Functional and Model Hamiltonian Study

    Science.gov (United States)

    Hou, Yusheng; Xiang, Hongjun; Gong, Xingao; Key Laboratory of Computational Physical Sciences (Ministry of Education) Collaboration

    Based on the density functional theory and our new model Hamiltonian, we have studied the basal-plane antiferromagnetism in the novel Jeff = 1/2 Mott insulator Ba2IrO4. By comparing the magnetic properties of the bulk Ba2IrO4 with those of the single-layer Ba2IrO4, we demonstrate unambiguously that the basal-plane antiferromagnetism is caused by the intralyer magnetic interactions rather than by the previously proposed interlayer ones. In order to reveal the origin of the basal-plane antiferromagnetism, we propose a new model Hamiltonian by adding the single ion anisotropy and pseudo-quadrupole interactions into the general bilinear pseudo-spin Hamiltonian. The obtained magnetic interaction parameters indicate that the single ion anisotropy and pseudo-quadrupole interactions are unexpectedly strong. Systematical Monte Carlo simulations demonstrate that the basal-plane antiferromagnetism is caused by the isotropic Heisenberg, bond-dependent Kitaev and pseudo-quadrupole interactions. Our results show for the first time that the single ion anisotropy and pseudo-quadrupole interaction can play significant roles in establishing the exotic magnetism in the Jeff = 1/2 Mott insulator.

  18. Ultrafast optical spectroscopy of the lowest energy excitations in the Mott insulator compound YVO3 : Evidence for Hubbard-type excitons

    NARCIS (Netherlands)

    Novelli, Fabio; Fausti, Daniele; Reul, Julia; Cilento, Federico; van Loosdrecht, Paul H. M.; Nugroho, Agung A.; Palstra, Thomas T. M.; Grueninger, Markus; Parmigiani, Fulvio

    2012-01-01

    Revealing the nature of charge excitations in strongly correlated electron systems is crucial to understanding their exotic properties. Here we use broadband ultrafast pump-probe spectroscopy in the visible range to study low-energy transitions across the Mott-Hubbard gap in the orbitally ordered in

  19. Probing the Mott physics in κ-(BEDT-TTF)₂X salts via thermal expansion.

    Science.gov (United States)

    de Souza, Mariano; Bartosch, Lorenz

    2015-02-11

    In the field of interacting electron systems the Mott metal-to-insulator (MI) transition represents one of the pivotal issues. The role played by lattice degrees of freedom for the Mott MI transition and the Mott criticality in a variety of materials are current topics under debate. In this context, molecular conductors of the κ-(BEDT-TTF)2X type constitute a class of materials for unraveling several aspects of the Mott physics. In this review, we present a synopsis of literature results with focus on recent expansivity measurements probing the Mott MI transition in this class of materials. Progress in the description of the Mott critical behavior is also addressed.

  20. Building a doped Mott system by holography

    CERN Document Server

    Ling, Yi; Niu, Chao; Wu, Jian-Pin

    2015-01-01

    We construct a holographic model in the framework of Q-lattices whose dual exhibits metal-insulator transitions. By introducing an interacting term between the Q-lattice and the electromagnetic field in bulk geometry, we find such kind of transition can be Mott-like. The evidences are presented as follows. i) The transition from a metallic phase to an insulating phase occurs when the lattice constant becomes larger. ii) A hard gap in the insulating phase can be manifestly observed in the optical conductivity. Nevertheless, in the zero temperature limit this model exhibits novel metallic behavior, featured by a gap as well as a zero-frequency mode with tiny spectral weight. It implies that our model is dual to a doped Mott system in one dimension where umklapp scattering is frozen at zero temperature. The similarity between this model and some organic linear chain conductors is briefly discussed.

  1. Holography and Mottness: A Discrete Marriage

    Science.gov (United States)

    Phillips, Philip

    2012-02-01

    Gauge-gravity duality has allowed us to solve the physics of certain strongly coupled quantum mechanical systems using gravity. I will show how a space-time consisting of a charged black hole and a bulk Pauli coupling corresponds to a boundary theory with a dynamically generated gap (with no obvious symmetry breaking) and a massive rearrangement of the spectral weight as in classic Mott systems such as VO2. In this holographic set-up, the gap opens only when discrete scale invariance is present. This raises the possibility that the elusive symmetry that might be broken in Mott insulators, in general, might pertain to scale invariance. The relevance of this claim to recent theories of Mott systems that possess massless charged bosons is explored.

  2. Mott transitions in three-component Falicov-Kimball model

    Science.gov (United States)

    Nguyen, Duong-Bo; Tran, Minh-Tien

    2013-01-01

    Metal-insulator transitions are studied within a three-component Falicov-Kimball model, which mimics a mixture of one-component and two-component fermionic particles with local repulsive interactions in optical lattices. Within the model, the two-component fermionic particles are able to hop in the lattice, while the one-component fermionic particles are localized. The model is studied by using the dynamical mean-field theory with exact diagonalization. Its homogeneous solutions establish Mott transitions for both commensurate and incommensurate fillings between one-third and two-thirds. At commensurate one-third and two-thirds fillings, the Mott transition occurs for any density of hopping particles, while at incommensurate fillings, the Mott transition can occur only for density one-half of hopping particles. At half-filling, depending on the repulsive interactions, the reentrant effect of the Mott insulator is observed. As increasing local interaction of hopping particles, the first insulator-metal transition is continuous, whereas the second metal-insulator transition is discontinuous. The second metal-insulator transition crosses a finite region where both metallic and insulating phase coexist. At third-filling, the Mott transition is established only for strong repulsive interactions. A phase separation occurs together with the phase transition.

  3. Insulator

    Energy Technology Data Exchange (ETDEWEB)

    Nakajima, Isao; Ikami, Toshiichi.

    1990-09-17

    The insulating properties of transmission line insulators are reduced when the insulator becomes contaminated. Such contamination is promoted by the adherence of rainwater including dusts and/or absorbing of dusts and gas when the insulated surface is wetted with rainwater. It is known to treat insulators with water repellent compounds to avoid this problem, but known treatments have certain disadvantages such as loss of water repellency in a short time. An object of this invention is to overcome these disadvantages and to provide an insulator having a high usefulness and excellent water repellency which can be easily treated and maintained over a long period of time. It has been found that if a glass layer itself forming the surface of the insulator has water repellent properties, the water repellency of the insulator surface is not lost. According to the invention, the glassy surface is treated with silane or silazane to provide a surface layer of the proper water repellency. The insulator surface may be preferably treated in such a manner that the insulator is immersed in a bath of silane or silazane. Experiments are described to illustrate the performance of insulators treated according to the invention in comparison to non-treated insulators. 1 fig., 1 tab.

  4. Nonequilibrium gap collapse near a first-order Mott transition

    Science.gov (United States)

    Sandri, Matteo; Fabrizio, Michele

    2015-03-01

    We study the nonequilibrium dynamics of a simple model for V2O3 that consists of a quarter-filled Hubbard model for two orbitals that are split by a weak crystal field. Peculiarities of this model are (1) a Mott insulator whose gap corresponds to transferring an electron from the occupied lower orbital to the empty upper one, rather than from the lower to the upper Hubbard subbands; (2) a Mott transition generically of first order even at zero temperature. We simulate by means of time-dependent Gutzwiller approximation the evolution within the insulating phase of an initial state endowed by a nonequilibrium population of electrons in the upper orbital and holes in the lower one. We find that the excess population may lead, above a threshold, to a gap collapse and drive the insulator into the metastable metallic phase within the coexistence region around the Mott transition. This result foresees a nonthermal pathway to revert a Mott insulator into a metal. Even though this physical scenario is uncovered in a very specific toy model, we argue it might apply to other Mott insulating materials that share similar features.

  5. Unveiling the origin of the basal-plane antiferromagnetism in the spin-orbit Mott insulator Ba2IrO4: a density functional and model Hamiltonian study

    Science.gov (United States)

    Hou, Y. S.; Xiang, H. J.; Gong, X. G.

    2016-04-01

    Based on the density functional theory and model Hamiltonian, we studied the basal-plane antiferromagnetism in the spin-orbit Mott insulator Ba2IrO4. By comparing the magnetic properties of the bulk Ba2IrO4 with those of the single-layer Ba2IrO4, we demonstrate unambiguously that the basal-plane antiferromagnetism is caused by the intralyer magnetic interactions rather than by the previously proposed interlayer ones. Aiming at revealing the origin of the basal-plane antiferromagnetism, we add the single ion anisotropy and pseudo-quadrupole interactions into the general bilinear pseudo-spin Hamiltonian. The obtained magnetic interaction parameters indicate that the single ion anisotropy and pseudo-quadrupole interactions are unexpectedly strong. Systematical Monte Carlo simulations demonstrate that the basal-plane antiferromagnetism is caused by isotropic Heisenberg, bond-dependent Kitaev and pseudo-quadrupole interactions. On the basis of this study the single ion anisotropy and pseudo-quadrupole interactions could play a role in explaining magnetic interactions in other iridates.

  6. Metallization of solid molecular hydrogen in two dimensions: Mott-Hubbard-type transition

    Science.gov (United States)

    Biborski, Andrzej; Kådzielawa, Andrzej P.; Spałek, Józef

    2017-08-01

    We analyze the pressure-induced metal-insulator transition in a two-dimensional vertical stack of H2 molecules in (x-y) plane, and show that it represents a striking example of the Mott-Hubbard-type transition. Our combined exact diagonalization approach, formulated and solved in the second quantization formalism, includes also simultaneous ab initio readjustment of the single-particle wave functions, contained in the model microscopic parameters. The system is studied as a function of applied side force (generalized pressure), both in the H2-molecular and H-quasiatomic states. Extended Hubbard model is taken at the start, together with longer-range electron-electron interactions incorporated into the scheme. The stacked molecular plane transforms discontinuously into a (quasi)atomic state under the applied force via a two-step transition: the first between molecular insulating phases and the second from the molecular to the quasiatomic metallic phase. No quasiatomic insulating phase occurs. All the transitions are accompanied by abrupt changes of the bond length and the intermolecular distance (lattice parameter), as well as by discontinuous changes of the principal electronic properties, which are characteristic of the Mott-Hubbard transition here associated with the jumps of the predetermined equilibrium lattice parameter and the effective bond length. The phase transition can be interpreted in terms of the solid hydrogen metallization under pressure exerted by, e.g., the substrate covered with a monomolecular H2 film of the vertically stacked molecules. Both the Mott and Hubbard criteria at the insulator to metal transition are discussed.

  7. Edge Transport in 2D Cold Atom Optical Lattices

    OpenAIRE

    V. W. Scarola; Sarma, S. Das

    2006-01-01

    We theoretically study the observable response of edge currents in two dimensional cold atom optical lattices. As an example we use Gutzwiller mean-field theory to relate persistent edge currents surrounding a Mott insulator in a slowly rotating trapped Bose-Hubbard system to time of flight measurements. We briefly discuss an application, the detection of Chern number using edge currents of a topologically ordered optical lattice insulator.

  8. Electrolyte-gated charge transport in molecularly linked gold nanoparticle films: The transition from a Mott insulator to an exotic metal with strong electron-electron interactions

    Science.gov (United States)

    Tie, M.; Dhirani, A.-A.

    2016-09-01

    Strong electron-electron interactions experienced by electrons as they delocalize are widely believed to play a key role in a range of remarkable phenomena such as high Tc superconductivity, colossal magnetoresistance, and others. Strongly correlated electrons are often described by the Hubbard model, which is the simplest description of a correlated system and captures important gross features of phase diagrams of strongly correlated materials. However, open challenges in this field include experimentally mapping correlated electron phenomena beyond those captured by the Hubbard model, and extending the model accordingly. Here we use electrolyte gating to study a metal-insulator transition (MIT) in a new class of strongly correlated material, namely, nanostructured materials, using 1,4-butanedithiol-linked Au nanoparticle films (NPFs) as an example. Electrolyte gating provides a means for tuning the chemical potential of the materials over a wide range, without significantly modifying film morphology. On the insulating side of the transition, we observe Efros-Shklovskii variable range hopping and a soft Coulomb gap, evidencing the importance of Coulomb barriers. On the metallic side of the transition, we observe signatures of strong disorder mediated electron-electron correlations. Gating films near MIT also reveal a zero-bias conductance peak, which we attribute to a resonance at the Fermi level predicted by the Hubbard and Anderson impurity models when electrons delocalize and experience strong Coulomb electron-electron interactions. This study shows that by enabling large changes in carrier density, electrolyte gating of Au NPFs is a powerful means for tuning through the Hubbard MIT in NPFs. By revealing the range of behaviours that strongly correlated electrons can exhibit, this platform can guide the development of an improved understanding of correlated materials.

  9. Atomically flattening of Si surface of silicon on insulator and isolation-patterned wafers

    Science.gov (United States)

    Goto, Tetsuya; Kuroda, Rihito; Akagawa, Naoya; Suwa, Tomoyuki; Teramoto, Akinobu; Li, Xiang; Obara, Toshiki; Kimoto, Daiki; Sugawa, Shigetoshi; Ohmi, Tadahiro; Kamata, Yutaka; Kumagai, Yuki; Shibusawa, Katsuhiko

    2015-04-01

    By introducing high-purity and low-temperature Ar annealing at 850 °C, atomically flat Si surfaces of silicon-on-insulator (SOI) and shallow-trench-isolation (STI)-patterned wafers were obtained. In the case of the STI-patterned wafer, this low-temperature annealing and subsequent radical oxidation to form a gate oxide film were introduced into the complementary metal oxide semiconductor (CMOS) process with 0.22 µm technology. As a result, a test array circuit for evaluating the electrical characteristics of a very large number (>260,000) of metal oxide semiconductor field effect transistors (MOSFETs) having an atomically flat gate insulator/Si interface was successfully fabricated on a 200-mm-diameter wafer. By evaluating 262,144 nMOSFETs, it was found that not only the gate oxide reliability was improved, but also the noise amplitude of the gate-source voltage related to the random telegraph noise (RTN) was reduced owing to the introduction of the atomically flat gate insulator/Si interface.

  10. Bandgap modulation in photoexcited topological insulator Bi2Te3 via atomic displacements

    Science.gov (United States)

    Hada, Masaki; Norimatsu, Katsura; Tanaka, Sei'ichi; Keskin, Sercan; Tsuruta, Tetsuya; Igarashi, Kyushiro; Ishikawa, Tadahiko; Kayanuma, Yosuke; Miller, R. J. Dwayne; Onda, Ken; Sasagawa, Takao; Koshihara, Shin-ya; Nakamura, Kazutaka G.

    2016-07-01

    The atomic and electronic dynamics in the topological insulator (TI) Bi2Te3 under strong photoexcitation were characterized with time-resolved electron diffraction and time-resolved mid-infrared spectroscopy. Three-dimensional TIs characterized as bulk insulators with an electronic conduction surface band have shown a variety of exotic responses in terms of electronic transport when observed under conditions of applied pressure, magnetic field, or circularly polarized light. However, the atomic motions and their correlation between electronic systems in TIs under strong photoexcitation have not been explored. The artificial and transient modification of the electronic structures in TIs via photoinduced atomic motions represents a novel mechanism for providing a comparable level of bandgap control. The results of time-domain crystallography indicate that photoexcitation induces two-step atomic motions: first bismuth and then tellurium center-symmetric displacements. These atomic motions in Bi2Te3 trigger 10% bulk bandgap narrowing, which is consistent with the time-resolved mid-infrared spectroscopy results.

  11. On the nature of the Mott transition in multiorbital systems

    Science.gov (United States)

    Facio, Jorge I.; Vildosola, V.; García, D. J.; Cornaglia, Pablo S.

    2017-02-01

    We analyze the nature of a Mott metal-insulator transition in multiorbital systems using dynamical mean-field theory. The auxiliary multiorbital quantum impurity problem is solved using continuous-time quantum Monte Carlo and the rotationally invariant slave-boson (RISB) mean-field approximation. We focus our analysis on the Kanamori Hamiltonian and find that there are two markedly different regimes determined by the nature of the lowest-energy excitations of the atomic Hamiltonian. The RISB results at T →0 suggest the following rule of thumb for the order of the transition at zero temperature: a second-order transition is to be expected if the lowest-lying excitations of the atomic Hamiltonian are charge excitations, while the transition tends to be first order if the lowest-lying excitations are in the same charge sector as the atomic ground state. At finite temperatures, the transition is first order and its strength, as measured, e.g., by the jump in the quasiparticle weight at the transition, is stronger in the parameter regime where the RISB method predicts a first-order transition at zero temperature. Interestingly, these results seem to apply to a wide variety of models and parameter regimes.

  12. Magnetic order and Mott transition on the checkerboard lattice

    Science.gov (United States)

    Swain, Nyayabanta; Majumdar, Pinaki

    2017-03-01

    The checkerboard lattice, with alternating ‘crossed’ plaquettes, serves as the two dimensional analog of the pyrochlore lattice. The corner sharing plaquette structure leads to a hugely degenerate ground state, and no magnetic order, for classical spins with short range antiferromagnetic interaction. For the half-filled Hubbard model on this structure, however, we find that the Mott insulating phase involves virtual electronic processes that generate longer range and multispin couplings. These couplings lift the degeneracy, selecting a ‘flux like’ state in the Mott insulator. Increasing temperature leads, strangely, to a sharp crossover from this state to a ‘120 degree’ correlated state and then a paramagnet. Decrease in the Hubbard repulsion drives the system towards an insulator-metal transition—the moments reduce, and a spin disordered state wins over the flux state. Near the insulator-metal transition the electron system displays a pseudogap extending over a large temperature window.

  13. Pseudogap and superconductivity in two-dimensional doped charge-transfer insulators

    Science.gov (United States)

    Fratino, L.; Sémon, P.; Sordi, G.; Tremblay, A.-M. S.

    2016-06-01

    High-temperature superconductivity emerges upon doping a state of matter that is insulating because of interactions. A widely studied model considers one orbital per CuO2 unit cell on a square lattice with a strong intraorbital repulsion that leads to a so-called Mott-Hubbard insulator. Here we solve a model that takes into account, within each unit cell, two oxygen orbitals where there is no electron-electron repulsion and a copper orbital with strong electron-electron repulsion. The insulating phase is a so-called charge-transfer insulator, not a Mott-Hubbard insulator. Using cluster dynamical mean-field theory with continuous-time quantum Monte Carlo as an impurity solver and 12 atoms per cluster, we report the normal and superconducting phase diagram of this model as a function of doping, interaction strength, and temperature. As expected, the three-orbital model is consistent with the experimental observation that doped holes are located predominantly on oxygens, a result that goes beyond the one-orbital model. Nevertheless, the phase boundary between pseudogap and correlated metal, the Widom line, and the origin of the pairing energy (kinetic vs potential) are similar to the one-orbital model, demonstrating that these are emergent phenomena characteristic of doped Mott insulators, independently of many microscopic details. Broader implications are discussed.

  14. Superfluid and Insulating Phases of Fermion Mixtures in Optical Lattices

    Science.gov (United States)

    Iskin, M.; de Melo, C. A. R. Sá

    2007-08-01

    The ground state phase diagram of fermion mixtures in optical lattices is analyzed as a function of interaction strength, fermion filling factor, and tunneling parameters. In addition to standard superfluid, phase-separated or coexisting superfluid excess-fermion phases found in homogeneous or harmonically trapped systems, fermions in optical lattices have several insulating phases, including a molecular Bose-Mott insulator (BMI), a Fermi-Pauli (band) insulator (FPI), a phase-separated BMI-FPI mixture or a Bose-Fermi checkerboard (BFC). The molecular BMI phase is the fermion mixture counterpart of the atomic BMI found in atomic Bose systems, the BFC or BMI-FPI phases exist in Bose-Fermi mixtures, and lastly the FPI phase is particular to the Fermi nature of the constituent atoms of the mixture.

  15. Laser spectroscopic probing of coexisting superfluid and insulating states of an atomic Bose-Hubbard system

    Science.gov (United States)

    Kato, Shinya; Inaba, Kensuke; Sugawa, Seiji; Shibata, Kosuke; Yamamoto, Ryuta; Yamashita, Makoto; Takahashi, Yoshiro

    2016-04-01

    A system of ultracold atoms in an optical lattice has been regarded as an ideal quantum simulator for a Hubbard model with extremely high controllability of the system parameters. While making use of the controllability, a comprehensive measurement across the weakly to strongly interacting regimes in the Hubbard model to discuss the quantum many-body state is still limited. Here we observe a great change in the excitation energy spectra across the two regimes in an atomic Bose-Hubbard system by using a spectroscopic technique, which can resolve the site occupancy in the lattice. By quantitatively comparing the observed spectra and numerical simulations based on sum rule relations and a binary fluid treatment under a finite temperature Gutzwiller approximation, we show that the spectra reflect the coexistence of a delocalized superfluid state and a localized insulating state across the two regimes.

  16. Comparison of kinetic models for atom recombination on high-temperature reusable surface insulation

    Science.gov (United States)

    Willey, Ronald J.

    1993-01-01

    Five kinetic models are compared for their ability to predict recombination coefficients for oxygen and nitrogen atoms over high-temperature reusable surface insulation (HRSI). Four of the models are derived using Rideal-Eley or Langmuir-Hinshelwood catalytic mechanisms to describe the reaction sequence. The fifth model is an empirical expression that offers certain features unattainable through mechanistic description. The results showed that a four-parameter model, with temperature as the only variable, works best with data currently available. The model describes recombination coefficients for oxygen and nitrogen atoms for temperatures from 300 to 1800 K. Kinetic models, with atom concentrations, demonstrate the influence of atom concentration on recombination coefficients. These models can be used for the prediction of heating rates due to catalytic recombination during re-entry or aerobraking maneuvers. The work further demonstrates a requirement for more recombination experiments in the temperature ranges of 300-1000 K, and 1500-1850 K, with deliberate concentration variation to verify model requirements.

  17. Extrapolation procedures in Mott electron polarimetry

    Science.gov (United States)

    Gay, T. J.; Khakoo, M. A.; Brand, J. A.; Furst, J. E.; Wijayaratna, W. M. K. P.; Meyer, W. V.; Dunning, F. B.

    1992-01-01

    In standard Mott electron polarimetry using thin gold film targets, extrapolation procedures must be used to reduce the experimentally measured asymmetries A to the values they would have for scattering from single atoms. These extrapolations involve the dependent of A on either the gold film thickness or the maximum detected electron energy loss in the target. A concentric cylindrical-electrode Mott polarimeter, has been used to study and compare these two types of extrapolations over the electron energy range 20-100 keV. The potential systematic errors which can result from such procedures are analyzed in detail, particularly with regard to the use of various fitting functions in thickness extrapolations, and the failure of perfect energy-loss discrimination to yield accurate polarizations when thick foils are used.

  18. He atom-surface scattering: Surface dynamics of insulators, overlayers and crystal growth

    Energy Technology Data Exchange (ETDEWEB)

    1992-01-01

    Investigations in this laboratory have focused on the surface structure and dynamics of ionic insulators and on epitaxial growth onto alkali halide crystals. In the later the homoepitaxial growth of NaCl/NaCl(001) and the heteroepitaxial growth of KBr/NaCl(001), NaCl/KBr(001) and KBr/RbCl(001) have been studied by monitoring the specular He scattering as a function of the coverage and by measuring the angular and energy distributions of the scattered He atoms. These data provide information on the surface structure, defect densities, island sizes and surface strain during the layer-by-layer growth. The temperature dependence of these measurements also provides information on the mobilities of the admolecules. He atom scattering is unique among surface probes because the low-energy, inert atoms are sensitive only to the electronic structure of the topmost surface layer and are equally applicable to all crystalline materials. It is proposed for the next year to exploit further the variety of combinations possible with the alkali halides in order to carry out a definitive study of epitaxial growth in the ionic insulators. The work completed so far, including measurements of the Bragg diffraction and surface dispersion at various stages of growth, appears to be exceptionally rich in detail, which is particularly promising for theoretical modeling. In addition, because epitaxial growth conditions over a wide range of lattice mismatches is possible with these materials, size effects in growth processes can be explored in great depth. Further, as some of the alkali halides have the CsCl structure instead of the NaCl structure, we can investigate the effects of the heteroepitaxy with materials having different lattice preferences. Finally, by using co-deposition of different alkali halides, one can investigate the formation and stability of alloys and even alkali halide superlattices.

  19. Mottness at finite doping and charge instabilities in cuprates

    Science.gov (United States)

    Peli, S.; Conte, S. Dal; Comin, R.; Nembrini, N.; Ronchi, A.; Abrami, P.; Banfi, F.; Ferrini, G.; Brida, D.; Lupi, S.; Fabrizio, M.; Damascelli, A.; Capone, M.; Cerullo, G.; Giannetti, C.

    2017-08-01

    The influence of Mott physics on the doping-temperature phase diagram of copper oxides represents a major issue that is the subject of intense theoretical and experimental efforts. Here, we investigate the ultrafast electron dynamics in prototypical single-layer Bi-based cuprates at the energy scale of the O-2p --> Cu-3d charge-transfer (CT) process. We demonstrate a clear evolution of the CT excitations from incoherent and localized, as in a Mott insulator, to coherent and delocalized, as in a conventional metal. This reorganization of the high-energy degrees of freedom occurs at the critical doping pcr ~ 0.16 irrespective of the temperature, and it can be well described by dynamical mean-field theory calculations. We argue that the onset of low-temperature charge instabilities is the low-energy manifestation of the underlying Mottness that characterizes the p low-temperature phases in underdoped copper oxides.

  20. Superconducting fluctuations in organic molecular metals enhanced by Mott criticality.

    Science.gov (United States)

    Nam, Moon-Sun; Mézière, Cécile; Batail, Patrick; Zorina, Leokadiya; Simonov, Sergey; Ardavan, Arzhang

    2013-12-02

    Unconventional superconductivity typically occurs in materials in which a small change of a parameter such as bandwidth or doping leads to antiferromagnetic or Mott insulating phases. As such competing phases are approached, the properties of the superconductor often become increasingly exotic. For example, in organic superconductors and underdoped high-T(c) cuprate superconductors a fluctuating superconducting state persists to temperatures significantly above T(c). By studying alloys of quasi-two-dimensional organic molecular metals in the κ-(BEDT-TTF)₂X family, we reveal how the Nernst effect, a sensitive probe of superconducting phase fluctuations, evolves in the regime of extreme Mott criticality. We find strong evidence that, as the phase diagram is traversed through superconductivity towards the Mott state, the temperature scale for superconducting fluctuations increases dramatically, eventually approaching the temperature at which quasiparticles become identifiable at all.

  1. Ultrathin Topological Insulator Bi 2 Se 3 Nanoribbons Exfoliated by Atomic Force Microscopy

    KAUST Repository

    Hong, Seung Sae

    2010-08-11

    Ultrathin topological insulator nanostructures, in which coupling between top and bottom surface states takes place, are of great intellectual and practical importance. Due to the weak van der Waals interaction between adjacent quintuple layers (QLs), the layered bismuth selenide (Bi2Se 3), a single Dirac-cone topological insulator with a large bulk gap, can be exfoliated down to a few QLs. In this paper, we report the first controlled mechanical exfoliation of Bi2Se3 nanoribbons (>50 QLs) by an atomic force microscope (AFM) tip down to a single QL. Microwave impedance microscopy is employed to map out the local conductivity of such ultrathin nanoribbons, showing drastic difference in sheet resistance between 1-2 QLs and 4-5 QLs. Transport measurement carried out on an exfoliated (>5 QLs) Bi2Se3 device shows nonmetallic temperature dependence of resistance, in sharp contrast to the metallic behavior seen in thick (>50 QLs) ribbons. These AFM-exfoliated thin nanoribbons afford interesting candidates for studying the transition from quantum spin Hall surface to edge states. © 2010 American Chemical Society.

  2. He atom surface spectroscopy: Surface lattice dynamics of insulators, metals and metal overlayers

    Energy Technology Data Exchange (ETDEWEB)

    1990-01-01

    During the first three years of this grant (1985--1988) the effort was devoted to the construction of a state-of-the-art He atom scattering (HAS) instrument which would be capable of determining the structure and dynamics of metallic, semiconductor or insulator crystal surfaces. The second three year grant period (1988--1991) has been dedicated to measurements. The construction of the instrument went better than proposed; it was within budget, finished in the proposed time and of better sensitivity and resolution than originally planned. The same success has been carried over to the measurement phase where the concentration has been on studies of insulator surfaces, as discussed in this paper. The experiments of the past three years have focused primarily on the alkali halides with a more recent shift to metal oxide crystal surfaces. Both elastic and inelastic scattering experiments were carried out on LiF, NaI, NaCl, RbCl, KBr, RbBr, RbI, CsF, CsI and with some preliminary work on NiO and MgO.

  3. Pressure-induced Mott transition in an organic superconductor with a finite doping level.

    Science.gov (United States)

    Oike, H; Miyagawa, K; Taniguchi, H; Kanoda, K

    2015-02-13

    We report the pressure study of a doped organic superconductor with a Hall coefficient and conductivity measurements. We find that maximally enhanced superconductivity and a marginal-Fermi liquid appear around a certain pressure where mobile carriers increase critically, suggesting a possible quantum phase transition between strongly and weakly correlated regimes. This observation points to the presence of a criticality in Mottness for a doped Mott insulator with tunable correlation.

  4. Tunneling Hamiltonian description of the atomic-scale 0-{pi} transition in superconductor/ferromagnetic-insulator junctions

    Energy Technology Data Exchange (ETDEWEB)

    Kawabata, S., E-mail: s-kawabata@aist.go.jp [Nanosystem Research Institute (NRI), National Institute of Advanced Industrial Science and Technology (AIST), Tsukuba, Ibaraki 305-8568 (Japan)] [CREST, Japan Science and Technology Corporation (JST), Kawaguchi, Saitama 332-0012 (Japan); Tanaka, Y. [Department of Applied Physics, Nagoya University, Nagoya 464-8603 (Japan); Golubov, A.A. [Faculty of Science and Technology, University of Twente, P.O. Box 217, 7500 AE Enschede (Netherlands); Vasenko, A.S. [Institut Laue-Langevin, 6 rue Jules Horowitz, BP 156, 38042 Grenoble (France); Kashiwaya, S. [Nanoelectronics Research Institute (NeRI), AIST, Tsukuba, Ibaraki 305-8568 (Japan); Asano, Y. [Department of Applied Physics, Hokkaido University, Sapporo 060-8628 (Japan)

    2011-11-15

    Josephson transport in a superconductor/ferromagnetic-insulator(FI)/superconductor junction is investigated analytically. By using the tunneling Hamiltonian method, we found that the spin-dependent {pi}-phase shift of the electron wave function in a FI layer gives the atomic scale 0-{pi} transition. This observation is consistent with previous numerical results. We show a perturbation theory of the Josephson transport through ferromagnetic insulators (FIs). Recently we have found that the appearance of the atomic scale 0-{pi} transition in such junctions based on numerical calculations. In order to explore the mechanism of this anomalous transition, we have analytically calculated the Josephson current using the tunneling Hamiltonian theory and found that the spin dependent {pi}-phase shift in the FI barrier gives the atomic scale 0-{pi} transition.

  5. Nevill Mott reminiscences and appreciations

    CERN Document Server

    Davis, E A

    1998-01-01

    Sir Nevill Mott was Britain''s last Winner of the Nobel Prize for Physics. This is a tribute to the life and work of Nobel Laureate Nevill Mott, a hugely admired and appreciated man, and one of this countries greatest ever scientists. It includes contributions from over 80 of his friends, family and colleagues, full of anecdotes and appreciations for this collossus of modern physics.

  6. Correlated hopping of bosonic atoms induced by optical lattices

    Energy Technology Data Exchange (ETDEWEB)

    Eckholt, Maria [Max-Planck-Institut fuer Quantenoptik, Hans-Kopfermann-Strasse 1, Garching, D-85478 (Germany); Garcia-Ripoll, Juan Jose [Instituto de Fisica Fundamental, CSIC, c/Serrano 113b, Madrid E-28006 (Spain)], E-mail: maria.eckholt@mpq.mpg.de

    2009-09-15

    In this work, we analyze a particular setup with ultracold atoms trapped in state-dependent lattices. We show that any asymmetry in the contact interaction translates into one of two classes of correlated hopping. After deriving the effective lattice Hamiltonian for the atoms, we obtain analytically and numerically the different phases and quantum phase transitions. We find for weak correlated hopping both Mott insulators and charge density waves, while for stronger correlated hopping the system transitions into a pair superfluid. We demonstrate that this phase exists for a wide range of interaction asymmetries and has interesting correlation properties that differentiate it from an ordinary atomic Bose-Einstein condensate.

  7. Luino apartments, Motte, Italy

    Energy Technology Data Exchange (ETDEWEB)

    Scudo, G. [DPPPE, Milano (Italy)

    1999-07-01

    These low-energy-consumption buildings are well insulated and incorporate a direct-gain solar air system, a greenhouse and a solar air system. The last of these is an open-loop system comprised of a backpass air collector, a concrete ceiling for storage and heat distribution and a new type of facade-integrated handling unit for ventilation and regulation. The system has annual savings of 40% compared to a traditional building. (author)

  8. Detecting atoms trapped in an optical lattice using a tapered optical nanofiber.

    Science.gov (United States)

    Hennessy, T; Busch, Th

    2014-12-29

    Optical detection of structures with dimensions smaller than an optical wavelength requires devices that work on scales beyond the diffraction limit. Here we present the possibility of using a tapered optical nanofiber as a detector to resolve individual atoms trapped in an optical lattice in the Mott insulator phase. We show that the small size of the fiber combined with an enhanced photon collection rate can allow for the attainment of large and reliable measurement signals.

  9. Detecting correlation functions of ultracold atoms through fourier sampling of time-of-flight images.

    Science.gov (United States)

    Duan, L-M

    2006-03-17

    We propose a detection method for ultracold atoms which allows reconstruction of the full one-particle and two-particle correlation functions from the measurements. The method is based on Fourier sampling of the time-of-flight images through two consecutive impulsive Raman pulses. For applications of this method, we discuss a few examples, including detection of phase separation between superfluid and Mott insulators, various types of spin or superfluid orders, entanglement, exotic or fluctuating orders.

  10. Sir Nevill F. Mott Lecture Award

    NARCIS (Netherlands)

    Schropp, R.E.I.

    2010-01-01

    The Mott Lecture is awarded to scientists working in the tradition of Nobel laureate Sir Nevill F. Mott, with exceptional contributions to the fields important to the ICANS conference. The ICANS23 Mott Lecture was awarded to Prof. Dr. Sigurd Wagner of Princeton University. He is recognized for his g

  11. Mott Quantum Criticality in the Anisotropic 2D Hubbard Model

    Science.gov (United States)

    Lenz, Benjamin; Manmana, Salvatore R.; Pruschke, Thomas; Assaad, Fakher F.; Raczkowski, Marcin

    2016-02-01

    We present evidence for Mott quantum criticality in an anisotropic two-dimensional system of coupled Hubbard chains at half-filling. In this scenario emerging from variational cluster approximation and cluster dynamical mean-field theory, the interchain hopping t⊥ acts as a control parameter driving the second-order critical end point Tc of the metal-insulator transition down to zero at t⊥c/t ≃0.2 . Below t⊥c, the volume of the hole and electron Fermi pockets of a compensated metal vanishes continuously at the Mott transition. Above t⊥c, the volume reduction of the pockets is cut off by a first-order transition. We discuss the relevance of our findings to a putative quantum critical point in layered organic conductors, whose location remains elusive so far.

  12. Collective modes of a strongly interacting Bose gas: Probing the Mott transition

    NARCIS (Netherlands)

    M. Snoek

    2012-01-01

    We analyze the collective modes of a harmonically trapped, strongly interacting Bose gas in an optical lattice in the vicinity of the Mott-insulator transition. For that aim we employ the dynamical Gutzwiller mean-field method, by performing real-time evolution and by solving the equations in linear

  13. Energy spectrum of fermionized bosonic atoms in optical lattices

    Institute of Scientific and Technical Information of China (English)

    Jiurong Han; Haichao Zhang; Yuzhu Wang

    2005-01-01

    We investigate the energy spectrum of fermionized bosonic atoms, which behave very much like spinless noninteracting fermions, in optical lattices by means of the perturbation expansion and the retarded Green's function method. The results show that the energy spectrum splits into two energy bands with single-occupation; the fermionized bosonic atom occupies nonvanishing energy state and left hole has a vanishing energy at any given momentum, and the system is in Mott-insulating state with a energy gap.Using the characteristic of energy spectra we obtained a criterion with which one can judge whether the Tonks-Girardeau (TG) gas is achieved or not.

  14. Mott criticality and pseudogap in Bose-Fermi mixtures.

    Science.gov (United States)

    Altman, Ehud; Demler, Eugene; Rosch, Achim

    2012-12-07

    We study the Mott transition of a mixed Bose-Fermi system of ultracold atoms in an optical lattice, where the number of (spinless) fermions and bosons adds up to one atom per lattice, n(F)+n(B)=1. For weak interactions, a Fermi surface coexists with a Bose-Einstein condensate while for strong interaction the system is incompressible but still characterized by a Fermi surface of composite fermions. At the critical point, the spectral function of the fermions A(k,ω) exhibits a pseudogapped behavior, rising as |ω| at the Fermi momentum, while in the Mott phase it is fully gapped. Taking into account the interaction between the critical modes leads at very low temperatures either to p-wave pairing or the transition is driven weakly first order. The same mechanism should also be important in antiferromagnetic metals with a small Fermi surface.

  15. Pressure-Induced Confined Metal from the Mott Insulator Sr3Ir2O7

    Energy Technology Data Exchange (ETDEWEB)

    Ding, Yang; Yang, Liuxiang; Chen, Cheng-Chien; Kim, Heung-Sik; Han, Myung Joon; Luo, Wei; Feng, Zhenxing; Upton, Mary; Casa, Diego; Kim, Jungho; Gog, Thomas; Zeng, Zhidan; Cao, Gang; Mao, Ho-kwang; van Veenendaal, Michel

    2016-05-24

    The spin-orbit Mott insulator Sr3Ir2O7 provides a fascinating playground to explore insulator-metal transition driven by intertwined charge, spin, and lattice degrees of freedom. Here, we report high-pressure electric resistance and resonant inelastic x-ray scattering measurements on single-crystal Sr3Ir2O7 up to 63-65 GPa at 300 K. The material becomes a confined metal at 59.5 GPa, showing metallicity in the ab plane but an insulating behavior along the c axis. Such an unusual phenomenon resembles the strange metal phase in cuprate superconductors. Since there is no sign of the collapse of spin-orbit or Coulomb interactions in x-ray measurements, this novel insulator-metal transition is potentially driven by a first-order structural change at nearby pressures. Our discovery points to a new approach for synthesizing functional materials.

  16. Concept of a multichannel spin-resolving electron analyzer based on Mott scattering

    Energy Technology Data Exchange (ETDEWEB)

    Strocov, Vladimir N., E-mail: vladimir.strocov@psi.ch [Paul Scherrer Institute, CH-5232 Villigen-PSI (Switzerland); Petrov, Vladimir N. [St Petersburg Polytechnical University, Polytechnicheskaya Str. 29, St Petersburg RU-195251 (Russian Federation); Dil, J. Hugo [Paul Scherrer Institute, CH-5232 Villigen-PSI (Switzerland); École Polytechnique Fédérale de Lausanne, CH-1015 Lausanne (Switzerland)

    2015-04-10

    The concept of a two-dimensional multichannel electron spin detector based on Mott scattering and imaging-type electron optics is presented. The efficiency increase of about four orders of magnitude opens new scientific fields including buried magnetic interfaces. The concept of a multichannel electron spin detector based on optical imaging principles and Mott scattering (iMott) is presented. A multichannel electron image produced by a standard angle-resolving (photo) electron analyzer or microscope is re-imaged by an electrostatic lens at an accelerating voltage of 40 kV onto the Au target. Quasi-elastic electrons bearing spin asymmetry of the Mott scattering are imaged by magnetic lenses onto position-sensitive electron CCDs whose differential signals yield the multichannel spin asymmetry image. Fundamental advantages of this concept include acceptance of inherently divergent electron sources from the electron analyzer or microscope focal plane as well as small aberrations achieved by virtue of high accelerating voltages, as demonstrated by extensive ray-tracing analysis. The efficiency gain compared with the single-channel Mott detector can be a factor of more than 10{sup 4} which opens new prospects of spin-resolved spectroscopies in application not only to standard bulk and surface systems (Rashba effect, topological insulators, etc.) but also to buried heterostructures. The simultaneous spin detection combined with fast CCD readout enables efficient use of the iMott detectors at X-ray free-electron laser facilities.

  17. Magnet Lab Highlight: Upper critical field reaches 90 tesla near the Mott transition in fulleride superconductors

    Energy Technology Data Exchange (ETDEWEB)

    Mcdonald, Ross David [Los Alamos National Lab. (LANL), Los Alamos, NM (United States)

    2017-06-05

    The alkali-doped fullerides provide the first example of a transition from a three-dimensional Mott insulator to a superconductor, enabling the effects of both dimensionality and electron correlation on superconductivity to be explored. Chemically the alkali species tunes the superconductivity in the vicinity of the the Mott transition via sample volume. Measuring the relationship between the superconducting transition temperature and upper critical field reveals a crossover from weak- to strong-coupling associated with the dynamical Jahn–Teller effect as the Mott transition is approached. The use of pulsed magnets is required because the upper critical field is enhanced in the vicinity of the Mott insulating phase, reaching 90 T for RbxCs3-xC60 — the highest among cubic crystals. This required close collaboration between Prof Kasahara’s group and the Mag Lab to design rf-measurements compatible with sample encapsulation in an inert atmosphere. The concomitant increase of pairing strength with lattice volume near the Mott transition suggest that the cooperative interplay between molecular electronic structure and strong electron correlations plays a key role in realizing robust superconductivity (with high-TC and high-HC2).

  18. Mott Quantum Criticality in the Anisotropic 2D Hubbard Model

    OpenAIRE

    Lenz, Benjamin; Manmana, Salvatore R.; Pruschke, Thomas; Assaad, Fakher F.; Raczkowski, Marcin

    2015-01-01

    We present evidence for Mott quantum criticality in an anisotropic two-dimensional system of coupled Hubbard chains at half-filling. In this scenario emerging from variational cluster approximation and cluster dynamical mean-field theory, the interchain hopping $t_{\\perp}$ acts as a control parameter driving the second-order critical end point $T_c$ of the metal-insulator transition down to zero at $t_{\\perp}^{c}/t\\simeq 0.2$. Below $t_{\\perp}^{c}$, the volume of the hole and electron Fermi p...

  19. Evolution of spin-dependent atomic wave packets in a harmonic potential

    Institute of Scientific and Technical Information of China (English)

    Wen Ling-Hua; Liu Min; Kong Ling-Bo; Chen Ai-Xi; Zhan Ming-Sheng

    2005-01-01

    We have investigated theoretically the evolution of spin-dependent atomic wave packets in a harmonic magnetic trapping potential. For a Bose-condensed gas, which undergoes a Mott insulator transition and a spin-dependent transport, the atomic wavefunction can be described by an entangled single-atom state. Due to the confinement of the -harmonic potential, the density distributions exhibit periodic decay and revival, which is different from the case of free expansion after switching off the combined harmonic and optical lattice potential.

  20. Mottness at finite doping and charge-instabilities in cuprates.

    Science.gov (United States)

    Peli, S; Dal Conte, S; Comin, R; Nembrini, N; Ronchi, A; Abrami, P; Banfi, F; Ferrini, G; Brida, D; Lupi, S; Fabrizio, M; Damascelli, A; Capone, M; Cerullo, G; Giannetti, C

    2017-08-01

    The influence of the Mott physics on the doping-temperature phase diagram of copper oxides represents a major issue that is subject of intense theoretical and experimental effort. Here, we investigate the ultrafast electron dynamics in prototypical single-layer Bi-based cuprates at the energy scale of the O-2p→Cu-3d charge-transfer (CT) process. We demonstrate a clear evolution of the CT excitations from incoherent and localized, as in a Mott insulator, to coherent and delocalized, as in a conventional metal. This reorganization of the high-energy degrees of freedom occurs at the critical doping pcr ≈0.16 irrespective of the temperature, and it can be well described by dynamical mean field theory calculations. We argue that the onset of the low-temperature charge instabilities is the low-energy manifestation of the underlying Mottness that characterizes the p < pcr region of the phase diagram. This discovery sets a new framework for theories of charge order and low-temperature phases in underdoped copper oxides.

  1. Hubbard-I approach to the Mott transition

    Energy Technology Data Exchange (ETDEWEB)

    Grzybowski, Przemyslaw R.; Chhajlany, Ravindra W. [Faculty of Physics, Adam Mickiewicz University, Umultowska 85, 61-614 Poznan (Poland)

    2012-11-15

    We expose the relevance of double occupancy conservation symmetry in application of the Hubbard-I approach to strongly correlated electron systems. We propose the utility of a composite method, viz. the Hubbard-I method in conjunction with strong coupling perturbation expansion, for studying systems violating the afore-mentioned symmetry. We support this novel approach by presenting a first successful Hubbard-I type calculation for the description of the metal-insulator paramagnetic Mott transition in a strongly correlated electron system with conserved double occupancies, which is a constrained Hubbard Hamiltonian equivalent to the Hubbard bond charge Hamiltonian at a symmetry point X = t. In particular, we obtain the phase diagram of this system for arbitrary fillings, as well as new, universal critical indices of the Mott transition at half-filling in 1,2, and 3 dimensions. We also compare the Hubbard-I band-splitting Mott transition description with results obtained using the standard Gutzwiller Approximation (GA), and show that the two approximate approaches lead to qualitatively different results. In contrast to the GA applied to the system studied here, the Hubbard-I approach compares favorably with known exact results for the d = 1 dimensional chain. (Copyright copyright 2012 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

  2. Upper critical field reaches 90 tesla near the Mott transition in fulleride superconductors.

    Science.gov (United States)

    Kasahara, Y; Takeuchi, Y; Zadik, R H; Takabayashi, Y; Colman, R H; McDonald, R D; Rosseinsky, M J; Prassides, K; Iwasa, Y

    2017-02-17

    Controlled access to the border of the Mott insulating state by variation of control parameters offers exotic electronic states such as anomalous and possibly high-transition-temperature (Tc) superconductivity. The alkali-doped fullerides show a transition from a Mott insulator to a superconductor for the first time in three-dimensional materials, but the impact of dimensionality and electron correlation on superconducting properties has remained unclear. Here we show that, near the Mott insulating phase, the upper critical field Hc2 of the fulleride superconductors reaches values as high as ∼90 T-the highest among cubic crystals. This is accompanied by a crossover from weak- to strong-coupling superconductivity and appears upon entering the metallic state with the dynamical Jahn-Teller effect as the Mott transition is approached. These results suggest that the cooperative interplay between molecular electronic structure and strong electron correlations plays a key role in realizing robust superconductivity with high-Tc and high-Hc2.

  3. Upper critical field reaches 90 tesla near the Mott transition in fulleride superconductors

    Science.gov (United States)

    Kasahara, Y.; Takeuchi, Y.; Zadik, R. H.; Takabayashi, Y.; Colman, R. H.; McDonald, R. D.; Rosseinsky, M. J.; Prassides, K.; Iwasa, Y.

    2017-02-01

    Controlled access to the border of the Mott insulating state by variation of control parameters offers exotic electronic states such as anomalous and possibly high-transition-temperature (Tc) superconductivity. The alkali-doped fullerides show a transition from a Mott insulator to a superconductor for the first time in three-dimensional materials, but the impact of dimensionality and electron correlation on superconducting properties has remained unclear. Here we show that, near the Mott insulating phase, the upper critical field Hc2 of the fulleride superconductors reaches values as high as ~90 T--the highest among cubic crystals. This is accompanied by a crossover from weak- to strong-coupling superconductivity and appears upon entering the metallic state with the dynamical Jahn-Teller effect as the Mott transition is approached. These results suggest that the cooperative interplay between molecular electronic structure and strong electron correlations plays a key role in realizing robust superconductivity with high-Tc and high-Hc2.

  4. Upper critical field reaches 90 tesla near the Mott transition in fulleride superconductors

    Science.gov (United States)

    Kasahara, Y.; Takeuchi, Y.; Zadik, R. H.; Takabayashi, Y.; Colman, R. H.; McDonald, R. D.; Rosseinsky, M. J.; Prassides, K.; Iwasa, Y.

    2017-01-01

    Controlled access to the border of the Mott insulating state by variation of control parameters offers exotic electronic states such as anomalous and possibly high-transition-temperature (Tc) superconductivity. The alkali-doped fullerides show a transition from a Mott insulator to a superconductor for the first time in three-dimensional materials, but the impact of dimensionality and electron correlation on superconducting properties has remained unclear. Here we show that, near the Mott insulating phase, the upper critical field Hc2 of the fulleride superconductors reaches values as high as ∼90 T—the highest among cubic crystals. This is accompanied by a crossover from weak- to strong-coupling superconductivity and appears upon entering the metallic state with the dynamical Jahn–Teller effect as the Mott transition is approached. These results suggest that the cooperative interplay between molecular electronic structure and strong electron correlations plays a key role in realizing robust superconductivity with high-Tc and high-Hc2. PMID:28211544

  5. A scalable neuristor built with Mott memristors

    Science.gov (United States)

    Pickett, Matthew D.; Medeiros-Ribeiro, Gilberto; Williams, R. Stanley

    2013-02-01

    The Hodgkin-Huxley model for action potential generation in biological axons is central for understanding the computational capability of the nervous system and emulating its functionality. Owing to the historical success of silicon complementary metal-oxide-semiconductors, spike-based computing is primarily confined to software simulations and specialized analogue metal-oxide-semiconductor field-effect transistor circuits. However, there is interest in constructing physical systems that emulate biological functionality more directly, with the goal of improving efficiency and scale. The neuristor was proposed as an electronic device with properties similar to the Hodgkin-Huxley axon, but previous implementations were not scalable. Here we demonstrate a neuristor built using two nanoscale Mott memristors, dynamical devices that exhibit transient memory and negative differential resistance arising from an insulating-to-conducting phase transition driven by Joule heating. This neuristor exhibits the important neural functions of all-or-nothing spiking with signal gain and diverse periodic spiking, using materials and structures that are amenable to extremely high-density integration with or without silicon transistors.

  6. Spectral evolution with doping of an antiferromagnetic Mott state

    Science.gov (United States)

    Wu, Huan-Kuang; Lee, Ting-Kuo

    2017-01-01

    Since the discovery of half-filled cuprate to be a Mott insulator, the excitation spectra above the chemical potential for the unoccupied states has attracted much research attention. There were many theoretical works using different numerical techniques to study this problem, but many have reached different conclusions. One of the reasons is the lack of very detailed high-resolution experimental results for the theories to be compared with. Recently, the scanning tunneling spectroscopy [P. Cai et al., Nat. Phys. 12, 1047 (2016), 10.1038/nphys3840; C. Ye et al., Nat. Commun. 4, 1365 (2013), 10.1038/ncomms2369] on lightly doped Mott insulator with an antiferromagnetic order found the presence of in-gap states with energy of order half an eV above the chemical potential. The measured spectral properties with doping are not quite consistent with earlier theoretical works. Although the experiment has disorder and localization effect, but for the energy scale we will study here, a model without disorder is sufficed to illustrate the underlying physics. We perform a diagonalization method on top of the variational Monte Carlo calculation to study the evolution of antiferromagnetic Mott state with doped hole concentration in the Hubbard model. Our results found in-gap states that behave similarly with ones reported by STS. These in-gap states acquire a substantial amount of dynamical spectral weight transferred from the upper Hubbard band. The in-gap states move toward chemical potential with increasing spectral weight as doping increases. Our result also provides information about the energy scale of these in-gap states in relation with the Coulomb coupling strength U .

  7. Mott transition and magnetism on the anisotropic triangular lattice

    Science.gov (United States)

    Acheche, S.; Reymbaut, A.; Charlebois, M.; Sénéchal, D.; Tremblay, A.-M. S.

    2016-12-01

    Spin-liquid behavior was recently suggested experimentally in the moderately one-dimensional organic compound κ -H3 (Cat-EDT-TTF)2. This compound can be modeled by the one-band Hubbard model on the anisotropic triangular lattice with t'/t ≃1.5 , where t' is the minority hopping. It thus becomes important to extend previous studies, that were performed in the range 0 ≤t'/t ≤1.2 , to find out whether there is a regime where Mott insulating behavior can be found without long-range magnetic order. To this end, we study the above model in the range 1.2 ≤t'/t ≤2 using cluster dynamical mean-field theory (CDMFT). We argue that it is important to choose a symmetry-preserving cluster rather than a quasi-one-dimensional cluster. We find that, upon increasing t'/t beyond t'/t ≈1.3 , the Mott transition at zero temperature is replaced by a first-order transition separating a metallic state from a collinear magnetic insulating state excluding the possibility to find a quantum spin liquid for the physically relevant value t'/t ≃1.5 . The phase diagram obtained in this study can provide a working basis for moderately one-dimensional compounds on the anisotropic triangular lattice.

  8. Topological insulators in cold-atom gases with non-Abelian gauge fields: the role of interactions

    Energy Technology Data Exchange (ETDEWEB)

    Orth, Peter Philipp [Institut fuer Theorie der Kondensierten Materie, Karlsruher Institut fuer Technologie, 76128 Karlsruhe (Germany); Cocks, Daniel; Buchhold, Michael; Hofstetter, Walter [Institut fuer Theoretische Physik, Goethe Universitaet, 60438 Frankfurt am Main (Germany); Rachel, Stephan [Department of Physics, Yale University, New Haven, Connecticut 06520 (United States); Le Hur, Karyn [Department of Physics, Yale University, New Haven, Connecticut 06520 (United States); Center for Theoretical Physics, Ecole Polytechnique, 91128 Palaiseau Cedex (France)

    2012-07-01

    With the recent technological advance of creating (non)-Abelian gauge fields for ultracold atoms in optical lattices, it becomes possible to study the interplay of topological phases and interactions in these systems. Specifically, we consider a spinful and time-reversal invariant version of the Hofstadter problem. In addition, we allow for a hopping term which does not preserve S{sub z} spin symmetry and a staggered sublattice potential. Without interactions, the parameters can be tuned such that the system is a topological insulator. Using a combination of analytical techniques and the powerful real-space dynamical mean-field (R-DMFT) method, we discuss the effect of interactions and determine the interacting phase diagram.

  9. A Difference in Using Atomic Layer Deposition or Physical Vapour Deposition TiN as Electrode Material in Metal-Insulator-Metal and Metal-Insulator-Silicon Capacitors

    NARCIS (Netherlands)

    Groenland, A.W.; Wolters, R.A.M.; Kovalgin, A.Y.; Schmitz, J.

    2011-01-01

    In this work, metal-insulator-metal (MIM) and metal-insulator-silicon (MIS) capacitors are studied using titanium nitride (TiN) as the electrode material. The effect of structural defects on the electrical properties on MIS and MIM capacitors is studied for various electrode configurations. In the M

  10. Concept of a multichannel spin-resolving electron analyzer based on Mott scattering

    Science.gov (United States)

    Strocov, Vladimir N.; Petrov, Vladimir N.; Dil, J. Hugo

    2015-01-01

    The concept of a multichannel electron spin detector based on optical imaging principles and Mott scattering (iMott) is presented. A multichannel electron image produced by a standard angle-resolving (photo) electron analyzer or microscope is re-imaged by an electrostatic lens at an accelerating voltage of 40 kV onto the Au target. Quasi-elastic electrons bearing spin asymmetry of the Mott scattering are imaged by magnetic lenses onto position-sensitive electron CCDs whose differential signals yield the multichannel spin asymmetry image. Fundamental advantages of this concept include acceptance of inherently divergent electron sources from the electron analyzer or microscope focal plane as well as small aberrations achieved by virtue of high accelerating voltages, as demonstrated by extensive ray-tracing analysis. The efficiency gain compared with the single-channel Mott detector can be a factor of more than 104 which opens new prospects of spin-resolved spectroscopies in application not only to standard bulk and surface systems (Rashba effect, topological insulators, etc.) but also to buried heterostructures. The simultaneous spin detection combined with fast CCD readout enables efficient use of the iMott detectors at X-ray free-electron laser facilities. PMID:25931087

  11. Atomically Thin Mica Flakes and Their Application as Ultrathin Insulating Substrates for Graphene

    NARCIS (Netherlands)

    Castellanos-Gomez, Andres; Wojtaszek, Magdalena; Tombros, Nikolaos; Agrait, Nicolas; van Wees, Bart J.; Rubio-Bollinger, Gabino; Agraït, Nicolás

    2011-01-01

    By mechanical exfoliation, it is possible to deposit atomically thin mica flakes down to single-monolayer thickness on SiO(2)/Si wafers. The optical contrast of these mica flakes on top of a SiO(2)/Si substrate depends on their thickness, the illumination wavelength, and the SiO(2) substrate thickne

  12. Nonperturbative landscape of the Mott-Hubbard transition: Multiple divergence lines around the critical endpoint

    Science.gov (United States)

    Schäfer, T.; Ciuchi, S.; Wallerberger, M.; Thunström, P.; Gunnarsson, O.; Sangiovanni, G.; Rohringer, G.; Toschi, A.

    2016-12-01

    We analyze the highly nonperturbative regime surrounding the Mott-Hubbard metal-to-insulator transition (MIT) by means of dynamical mean field theory (DMFT) calculations at the two-particle level. By extending the results of Schäfer et al. [Phys. Rev. Lett. 110, 246405 (2013), 10.1103/PhysRevLett.110.246405] we show the existence of infinitely many lines in the phase diagram of the Hubbard model where the local Bethe-Salpeter equations, and the related irreducible vertex functions, become singular in the charge as well as the particle-particle channel. By comparing our numerical data for the Hubbard model with analytical calculations for exactly solvable systems of increasing complexity [disordered binary mixture (BM), Falicov-Kimball (FK), and atomic limit (AL)], we have (i) identified two different kinds of divergence lines; (ii) classified them in terms of the frequency structure of the associated singular eigenvectors; and (iii) investigated their relation to the emergence of multiple branches in the Luttinger-Ward functional. In this way, we could distinguish the situations where the multiple divergences simply reflect the emergence of an underlying, single energy scale ν* below which perturbation theory is no longer applicable, from those where the breakdown of perturbation theory affects, not trivially, different energy regimes. Finally, we discuss the implications of our results on the theoretical understanding of the nonperturbative physics around the MIT and for future developments of many-body algorithms applicable in this regime.

  13. Direct Probing of the Mott Crossover in the SU(N Fermi-Hubbard Model

    Directory of Open Access Journals (Sweden)

    Christian Hofrichter

    2016-06-01

    Full Text Available We report on a detailed experimental investigation of the equation of state (EoS of the three-dimensional Fermi-Hubbard model (FHM in its generalized SU(N-symmetric form, using a degenerate ytterbium gas in an optical lattice. In its more common spin-1/2 form, the FHM is a central model of condensed-matter physics. The generalization to N>2 was first used to describe multi-orbital materials and is expected to exhibit novel many-body phases in a complex phase diagram. By realizing and locally probing the SU(N FHM with ultracold atoms, we obtain model-free access to thermodynamic quantities. The measurement of the EoS and the local compressibility allows us to characterize the crossover from a compressible metal to an incompressible Mott insulator. We reach specific entropies above Néel order but below that of uncorrelated spins. Having access to the EoS of such a system represents an important step towards probing predicted novel SU(N phases.

  14. Mott transition in a two-leg Bose-Hubbard ladder under an artificial magnetic field

    Science.gov (United States)

    Keleş, Ahmet; Oktel, M. Ö.

    2015-01-01

    We consider the Bose-Hubbard model on a two-leg ladder under an artificial magnetic field and investigate the superfluid-to-Mott insulator transition in this setting. Recently, this system has been experimentally realized [M. Atala et al., Nature Phys. 10, 588 (2014), 10.1038/nphys2998], albeit in a parameter regime that is far from the Mott transition boundary. Depending on the strength of the magnetic field, the single-particle spectrum has either a single ground state or two degenerate ground states. The transition between these two phases is reflected in the many-particle properties. We first investigate these phases through the Bogoliubov approximation in the superfluid regime and calculate the transition boundary for weak interactions. For stronger interactions the system is expected to form a Mott insulator. We calculate the Mott transition boundary as a function of the magnetic field and interleg coupling with mean-field theory, strong-coupling expansion, and density matrix renormalization group (DMRG). Finally, using the DMRG, we investigate the particle-hole excitation gaps of this system at different filling factors and find peaks at simple fractions, indicating the possibility of correlated phases.

  15. Inhomogeneous atomic Bose-Fermi mixtures in cubic lattices.

    Science.gov (United States)

    Cramer, M; Eisert, J; Illuminati, F

    2004-11-05

    We determine the ground state properties of inhomogeneous mixtures of bosons and fermions in cubic lattices and parabolic confining potentials. For finite hopping we determine the domain boundaries between Mott-insulator plateaux and hopping-dominated regions for lattices of arbitrary dimension within mean-field and perturbation theory. The results are compared with a new numerical method that is based on a Gutzwiller variational approach for the bosons and an exact treatment for the fermions. The findings can be applied as a guideline for future experiments with trapped atomic Bose-Fermi mixtures in optical lattices.

  16. Turning reduced density matrix theory into a practical tool for studying the Mott transition

    Science.gov (United States)

    Pernal, Katarzyna

    2015-11-01

    Strongly correlated systems pose a challenge for theoretical methods based on an independent electron approximation. Such methods struggle to predict a nonzero gap in Mott insulators or to capture the correct physics of the insulator-to-metal phase transition in strongly correlated materials. In a recent paper by Shinohara et al (2015 New J. Phys. 17 093038) it is shown that strongly correlated materials and correct descriptions of their phase transitions are within the reach of reduced density matrix functional theory (RDMFT) approximations. For a doping-induced phase transition, not only is a satisfactory agreement with experimental spectra found for NiO but it is also shown that the physical picture of the observed Mott transition stays in line with more computationally demanding many-body theories. This is an important step toward providing an RDMFT-based computation tool for studying strongly correlated materials.

  17. Properties of atomic-vapor and atomic-layer deposited Sr, Ti, and Nb doped Ta{sub 2}O{sub 5} Metal-Insulator-Metal capacitors

    Energy Technology Data Exchange (ETDEWEB)

    Lukosius, M., E-mail: lukosius@ihp-microelectronics.com [IHP, Im Technologiepark 25, 15236 Frankfurt Oder (Germany); Kaynak, C. Baristiran; Kubotsch, S. [IHP, Im Technologiepark 25, 15236 Frankfurt Oder (Germany); Blomberg, T. [ASM Microchemistry Ltd., Vaeinoe Auerin katu 12 A, 00560 Helsinki (Finland); Ruhl, G. [Infineon Technologies AG, Wernerwerkstr. 2, 93049 Regensburg (Germany); Wenger, Ch. [IHP, Im Technologiepark 25, 15236 Frankfurt Oder (Germany)

    2012-05-01

    Atomic Vapor Deposition and Atomic Layer Deposition techniques were applied for the depositions of Ta{sub 2}O{sub 5}, Ti-Ta-O, Sr-Ta-O and Nb-Ta-O oxide films for Metal-Insulator-Metal (MIM) capacitors used in back-end of line for Radio Frequency applications. Structural and electrical properties were studied. Films, deposited on the TiN bottom electrodes, in the temperature range of 225-400 Degree-Sign C, were amorphous, whereas the post deposition annealing at 600 Degree-Sign C resulted in the crystallization of Nb-Ta-O films. Electrical properties of MIM structures, investigated after sputtering Au top electrodes, revealed that the main characteristics were different for each oxide. On one hand, Ti-Ta-O based MIM capacitors possessed the highest dielectric constant (50), but the leakages currents were also the highest ({approx} 10{sup -5} A/cm{sup 2} at - 2 V). On the other hand, Sr-Ta-O showed the lowest leakage current densities ({approx} 10{sup -9} A/cm{sup 2} at - 2 V) as well as the smallest capacitance-voltage nonlinearity coefficients (40 ppm/V{sup 2}), but the dielectric constant was the smallest (20). The highest nonlinearity coefficients (290 ppm/V{sup 2}) were observed for Nb-Ta-O based MIM capacitors, although relatively high dielectric constant (40) and low leakage currents ({approx} 10{sup -7} A/cm{sup 2} at - 2 V) were measured. Temperature dependent leakage-voltage measurements revealed that only Sr-Ta-O showed no dependence of leakage current as a function of the measurement temperature.

  18. Intrinsic electron traps in atomic-layer deposited HfO{sub 2} insulators

    Energy Technology Data Exchange (ETDEWEB)

    Cerbu, F.; Madia, O.; Afanas' ev, V. V.; Houssa, M.; Stesmans, A. [Laboratory of Semiconductor Physics, Department of Physics and Astronomy, University of Leuven, 3001 Leuven (Belgium); Andreev, D. V. [Laboratory of Semiconductor Physics, Department of Physics and Astronomy, University of Leuven, 3001 Leuven (Belgium); Bauman Moscow State Technical University—Kaluga Branch, 248000 Kaluga, Moscow obl. (Russian Federation); Fadida, S.; Eizenberg, M. [Department of Materials Science and Engineering, Technion-Israel Institute of Technology, 32000 Haifa (Israel); Breuil, L. [imec, 3001 Leuven (Belgium); Lisoni, J. G. [imec, 3001 Leuven (Belgium); Institute of Physics and Mathematics, Faculty of Science, Universidad Austral de Chile, Valdivia (Chile); Kittl, J. A. [Laboratory of Semiconductor Physics, Department of Physics and Astronomy, University of Leuven, 3001 Leuven (Belgium); Advanced Logic Lab, Samsung Semiconductor, Inc., Austin, 78754 Texas (United States); Strand, J.; Shluger, A. L. [Department of Physics and Astronomy, University College London, London WC1E 6BT (United Kingdom)

    2016-05-30

    Analysis of photodepopulation of electron traps in HfO{sub 2} films grown by atomic layer deposition is shown to provide the trap energy distribution across the entire oxide bandgap. The presence is revealed of two kinds of deep electron traps energetically distributed at around E{sub t} ≈ 2.0 eV and E{sub t} ≈ 3.0 eV below the oxide conduction band. Comparison of the trapped electron energy distributions in HfO{sub 2} layers prepared using different precursors or subjected to thermal treatment suggests that these centers are intrinsic in origin. However, the common assumption that these would implicate O vacancies cannot explain the charging behavior of HfO{sub 2}, suggesting that alternative defect models should be considered.

  19. Delocalization of Electrons in Strong Insulators at High Dynamic Pressures

    Directory of Open Access Journals (Sweden)

    William J. Nellis

    2011-06-01

    Full Text Available Systematics of material responses to shock flows at high dynamic pressures are discussed. Dissipation in shock flows drives structural and electronic transitions or crossovers, such as used to synthesize metallic liquid hydrogen and most probably Al2O3 metallic glass. The term “metal” here means electrical conduction in a degenerate system, which occurs by band overlap in degenerate condensed matter, rather than by thermal ionization in a non-degenerate plasma. Since H2 and probably disordered Al2O3 become poor metals with minimum metallic conductivity (MMC virtually all insulators with intermediate strengths do so as well under dynamic compression. That is, the magnitude of strength determines the split between thermal energy and disorder, which determines material response. These crossovers occur via a transition from insulators with electrons localized in chemical bonds to poor metals with electron energy bands. For example, radial extents of outermost electrons of Al and O atoms are 7 a0 and 4 a0, respectively, much greater than 1.7 a0 needed for onset of hybridization at 300 GPa. All such insulators are Mott insulators, provided the term “correlated electrons” includes chemical bonds.

  20. Counting atoms using interaction blockade in an optical superlattice.

    Science.gov (United States)

    Cheinet, P; Trotzky, S; Feld, M; Schnorrberger, U; Moreno-Cardoner, M; Fölling, S; Bloch, I

    2008-08-29

    We report on the observation of an interaction blockade effect for ultracold atoms in optical lattices, analogous to the Coulomb blockade observed in mesoscopic solid state systems. When the lattice sites are converted into biased double wells, we detect a discrete set of steps in the well population for increasing bias potentials. These correspond to tunneling resonances where the atom number on each side of the barrier changes one by one. This allows us to count and control the number of atoms within a given well. By evaluating the amplitude of the different plateaus, we can fully determine the number distribution of the atoms in the lattice, which we demonstrate for the case of a superfluid and Mott insulating regime of 87Rb.

  1. High-stroke silicon-on-insulator MEMS nanopositioner: Control design for non-raster scan atomic force microscopy

    Energy Technology Data Exchange (ETDEWEB)

    Maroufi, Mohammad, E-mail: Mohammad.Maroufi@uon.edu.au; Fowler, Anthony G., E-mail: Anthony.Fowler@uon.edu.au; Bazaei, Ali, E-mail: Ali.Bazaei@newcastle.edu.au; Moheimani, S. O. Reza, E-mail: Reza.Moheimani@newcastle.edu.au [School of Electrical Engineering and Computer Science, University of Newcastle, Callaghan NSW 2308 (Australia)

    2015-02-15

    A 2-degree of freedom microelectromechanical systems nanopositioner designed for on-chip atomic force microscopy (AFM) is presented. The device is fabricated using a silicon-on-insulator-based process and is designed as a parallel kinematic mechanism. It contains a central scan table and two sets of electrostatic comb actuators along each orthogonal axis, which provides displacement ranges greater than ±10 μm. The first in-plane resonance modes are located at 1274 Hz and 1286 Hz for the X and Y axes, respectively. To measure lateral displacements of the stage, electrothermal position sensors are incorporated in the design. To facilitate high-speed scans, the highly resonant dynamics of the system are controlled using damping loops in conjunction with internal model controllers that enable accurate tracking of fast sinusoidal set-points. To cancel the effect of sensor drift on controlled displacements, washout controllers are used in the damping loops. The feedback controlled nanopositioner is successfully used to perform several AFM scans in contact mode via a Lissajous scan method with a large scan area of 20 μm × 20 μm. The maximum scan rate demonstrated is 1 kHz.

  2. Temperature and electric field induced metal-insulator transition in atomic layer deposited VO2 thin films

    Science.gov (United States)

    Tadjer, Marko J.; Wheeler, Virginia D.; Downey, Brian P.; Robinson, Zachary R.; Meyer, David J.; Eddy, Charles R.; Kub, Fritz J.

    2017-10-01

    Amorphous vanadium oxide (VO2) films deposited by atomic layer deposition (ALD) were crystallized with an ex situ anneal at 660-670 °C for 1-2 h under a low oxygen pressure (10-4 to 10-5 Torr). Under these conditions the crystalline VO2 phase was maintained, while formation of the V2O5 phase was suppressed. Electrical transition from the insulator to the metallic phase was observed in the 37-60 °C range, with an ROFF/RON ratio of up to about 750 and ΔTC ≅ 7-10 °C. Lateral electric field applied across two-terminal device structures induced a reversible phase change, with a room temperature transition field of about 25 kV/cm in the VO2 sample processed with the 2 h long O2 anneal. Both the width and slope of the field induced MIT I-V hysteresis were dependent upon the VO2 crystalline quality.

  3. High-stroke silicon-on-insulator MEMS nanopositioner: control design for non-raster scan atomic force microscopy.

    Science.gov (United States)

    Maroufi, Mohammad; Fowler, Anthony G; Bazaei, Ali; Moheimani, S O Reza

    2015-02-01

    A 2-degree of freedom microelectromechanical systems nanopositioner designed for on-chip atomic force microscopy (AFM) is presented. The device is fabricated using a silicon-on-insulator-based process and is designed as a parallel kinematic mechanism. It contains a central scan table and two sets of electrostatic comb actuators along each orthogonal axis, which provides displacement ranges greater than ±10 μm. The first in-plane resonance modes are located at 1274 Hz and 1286 Hz for the X and Y axes, respectively. To measure lateral displacements of the stage, electrothermal position sensors are incorporated in the design. To facilitate high-speed scans, the highly resonant dynamics of the system are controlled using damping loops in conjunction with internal model controllers that enable accurate tracking of fast sinusoidal set-points. To cancel the effect of sensor drift on controlled displacements, washout controllers are used in the damping loops. The feedback controlled nanopositioner is successfully used to perform several AFM scans in contact mode via a Lissajous scan method with a large scan area of 20 μm × 20 μm. The maximum scan rate demonstrated is 1 kHz.

  4. Pseudogap temperature as a Widom line in doped Mott insulators.

    Science.gov (United States)

    Sordi, G; Sémon, P; Haule, K; Tremblay, A-M S

    2012-01-01

    The pseudogap refers to an enigmatic state of matter with unusual physical properties found below a characteristic temperature T* in hole-doped high-temperature superconductors. Determining T* is critical for understanding this state. Here we study the simplest model of correlated electron systems, the Hubbard model, with cluster dynamical mean-field theory to find out whether the pseudogap can occur solely because of strong coupling physics and short nonlocal correlations. We find that the pseudogap characteristic temperature T* is a sharp crossover between different dynamical regimes along a line of thermodynamic anomalies that appears above a first-order phase transition, the Widom line. The Widom line emanating from the critical endpoint of a first-order transition is thus the organizing principle for the pseudogap phase diagram of the cuprates. No additional broken symmetry is necessary to explain the phenomenon. Broken symmetry states appear in the pseudogap and not the other way around.

  5. The Mott localization and magnetic properties in condensed fermions systems; Lokalizacja Motta i wlasnosci magnetyczne skondensowanych ukladow fermionowych

    Energy Technology Data Exchange (ETDEWEB)

    Wojcik, W. [Politechnika Krakowska, Cracow (Poland)

    1995-12-31

    In the present thesis the Mott localization and magnetic properties in condensed fermions system are considered. The Hubbard model has been used to strongly correlated electron systems and the Skyrme potential to a dense neutron matter with small concentration of protons. A variational approach to the metal-insulator transition is proposed which combines the Mott and Gutzwiller-Brinkman-Rice aspects of the localization. Magnetic properties of strongly correlated electrons are analyzed within the modified spin-rotation-invariant approach in the slow-boson representation. The theoretical prediction for considered systems are presented. 112 refs, 39 figs.

  6. Pulsed-voltage atom probe tomography of low conductivity and insulator materials by application of ultrathin metallic coating on nanoscale specimen geometry.

    Science.gov (United States)

    Adineh, Vahid R; Marceau, Ross K W; Chen, Yu; Si, Kae J; Velkov, Tony; Cheng, Wenlong; Li, Jian; Fu, Jing

    2017-10-01

    We present a novel approach for analysis of low-conductivity and insulating materials with conventional pulsed-voltage atom probe tomography (APT), by incorporating an ultrathin metallic coating on focused ion beam prepared needle-shaped specimens. Finite element electrostatic simulations of coated atom probe specimens were performed, which suggest remarkable improvement in uniform voltage distribution and subsequent field evaporation of the insulated samples with a metallic coating of approximately 10nm thickness. Using design of experiment technique, an experimental investigation was performed to study physical vapor deposition coating of needle specimens with end tip radii less than 100nm. The final geometries of the coated APT specimens were characterized with high-resolution scanning electron microscopy and transmission electron microscopy, and an empirical model was proposed to determine the optimal coating thickness for a given specimen size. The optimal coating strategy was applied to APT specimens of resin embedded Au nanospheres. Results demonstrate that the optimal coating strategy allows unique pulsed-voltage atom probe analysis and 3D imaging of biological and insulated samples. Copyright © 2017 Elsevier B.V. All rights reserved.

  7. Atomically flat interface between a single-terminated LaAlO3 substrate and SrTiO3 thin film is insulating

    Directory of Open Access Journals (Sweden)

    Z. Q. Liu

    2012-03-01

    Full Text Available The surface termination of (100-oriented LaAlO3 (LAO single crystals was examined by atomic force microscopy and optimized to produce a single-terminated atomically flat surface by annealing. Then the atomically flat STO film was achieved on a single-terminated LAO substrate, which is expected to be similar to the n-type interface of two-dimensional electron gas (2DEG, i.e., (LaO-(TiO2. Particularly, that can serve as a mirror structure for the typical 2DEG heterostructure to further clarify the origin of 2DEG. This newly developed interface was determined to be highly insulating. Additionally, this study demonstrates an approach to achieve atomically flat film growth based on LAO substrates.

  8. Orbital-selective Mott phase of Cu-substituted iron-based superconductors

    Science.gov (United States)

    Liu, Yang; Zhao, Yang-Yang; Song, Yun

    2016-07-01

    We study the phase transition in Cu-substituted iron-based superconductors with a new developed real-space Green’s function method. We find that Cu substitution has strong effect on the orbital-selective Mott transition introduced by the Hund’s rule coupling. The redistribution of the orbital occupancy which is caused by the increase of the Hund’s rule coupling, gives rise to the Mott-Hubbard metal-insulator transition in the half-filled d xy orbital. We also find that more and more electronic states appear inside that Mott gap of the d xy orbital with the increase of Cu substitution, and the in-gap states around the Fermi level are strongly localized at some specific lattice sites. Further, a distinctive phase diagram, obtained for the Cu-substituted Fe-based superconductors, displays an orbital-selective insulating phase, as a result of the cooperative effect of the Hund’s rule coupling and the impurity-induced disorder.

  9. Superconductivity, Mott-Hubbard states, and molecular orbital order in intercalated fullerides

    CERN Document Server

    Iwasa, Y

    2003-01-01

    This article reviews the current status of chemically doped fullerene superconductors and related compounds, with particular focus on Mott-Hubbard states and the role of molecular orbital degeneracy. Alkaline-earth metal fullerides produce superconductors of several kinds, all of which have states with higher valence than (C sub 6 sub 0) sup 6 sup - , where the second lowest unoccupied molecular orbital (the LUMO + 1 state) is filled. Alkali-metal-doped fullerides, on the other hand, afford superconductors only at the stoichiometry A sub 3 C sub 6 sub 0 (A denotes alkali metal) and in basically fcc structures. The metallicity and superconductivity of A sub 3 C sub 6 sub 0 compounds are destroyed either by reduction of the crystal symmetry or by change in the valence of C sub 6 sub 0. This difference is attributed to the narrower bandwidth in the A sub 3 C sub 6 sub 0 system, causing electronic instability in Jahn-Teller insulators and Mott-Hubbard insulators. The latter metal-insulator transition is driven by...

  10. Quantum and thermal phase transitions in a bosonic atom-molecule mixture in a two-dimensional optical lattice

    Science.gov (United States)

    de Forges de Parny, L.; Rousseau, V. G.

    2017-01-01

    We study the ground state and the thermal phase diagram of a two-species Bose-Hubbard model, with U(1 ) ×Z2 symmetry, describing atoms and molecules on a two-dimensional optical lattice interacting via a Feshbach resonance. Using quantum Monte Carlo simulations and mean-field theory, we show that the conversion between the two species, coherently coupling the atomic and molecular states, has a crucial impact on the Mott-superfluid transition and stabilizes an insulating phase with a gap controlled by the conversion term—the Feshbach insulator—instead of a standard Mott-insulating phase. Depending on the detuning between atoms and molecules, this model exhibits three phases: the Feshbach insulator, a molecular condensate coexisting with noncondensed atoms, and a mixed atomic-molecular condensate. Employing finite-size scaling analysis, we observe three-dimensional (3D) X Y (3D Ising) transition when U(1 ) (Z2) symmetry is broken, whereas the transition is first order when both U(1 ) and Z2 symmetries are spontaneously broken. The finite-temperature phase diagram is also discussed. The thermal disappearance of the molecular superfluid leads to a Berezinskii-Kosterlitz-Thouless transition with unusual universal jump in the superfluid density. The loss of the quasi-long-range coherence of the mixed atomic and molecular superfluid is more subtle since only atoms exhibit conventional Berezinskii-Kosterlitz-Thouless criticality. We also observe a signal compatible with a classical first-order transition between the mixed superfluid and the normal Bose liquid at low temperature.

  11. Atoms

    Institute of Scientific and Technical Information of China (English)

    刘洪毓

    2007-01-01

    Atoms(原子)are all around us.They are something like the bricks (砖块)of which everything is made. The size of an atom is very,very small.In just one grain of salt are held millions of atoms. Atoms are very important.The way one object acts depends on what

  12. Tracking the insulator-to-metal phase transition in VO2 with few-femtosecond extreme UV transient absorption spectroscopy.

    Science.gov (United States)

    Jager, Marieke F; Ott, Christian; Kraus, Peter M; Kaplan, Christopher J; Pouse, Winston; Marvel, Robert E; Haglund, Richard F; Neumark, Daniel M; Leone, Stephen R

    2017-09-05

    Coulomb correlations can manifest in exotic properties in solids, but how these properties can be accessed and ultimately manipulated in real time is not well understood. The insulator-to-metal phase transition in vanadium dioxide (VO2) is a canonical example of such correlations. Here, few-femtosecond extreme UV transient absorption spectroscopy (FXTAS) at the vanadium M2,3 edge is used to track the insulator-to-metal phase transition in VO2 This technique allows observation of the bulk material in real time, follows the photoexcitation process in both the insulating and metallic phases, probes the subsequent relaxation in the metallic phase, and measures the phase-transition dynamics in the insulating phase. An understanding of the VO2 absorption spectrum in the extreme UV is developed using atomic cluster model calculations, revealing V(3+)/d(2) character of the vanadium center. We find that the insulator-to-metal phase transition occurs on a timescale of 26 ± 6 fs and leaves the system in a long-lived excited state of the metallic phase, driven by a change in orbital occupation. Potential interpretations based on electronic screening effects and lattice dynamics are discussed. A Mott-Hubbard-type mechanism is favored, as the observed timescales and d(2) nature of the vanadium metal centers are inconsistent with a Peierls driving force. The findings provide a combined experimental and theoretical roadmap for using time-resolved extreme UV spectroscopy to investigate nonequilibrium dynamics in strongly correlated materials.

  13. He atom-surface scattering: Surface dynamics of insulators, overlayers and crystal growth. Progress report, May 1, 1991--April 30, 1992

    Energy Technology Data Exchange (ETDEWEB)

    1992-05-01

    Investigations in this laboratory have focused on the surface structure and dynamics of ionic insulators and on epitaxial growth onto alkali halide crystals. In the later the homoepitaxial growth of NaCl/NaCl(001) and the heteroepitaxial growth of KBr/NaCl(001), NaCl/KBr(001) and KBr/RbCl(001) have been studied by monitoring the specular He scattering as a function of the coverage and by measuring the angular and energy distributions of the scattered He atoms. These data provide information on the surface structure, defect densities, island sizes and surface strain during the layer-by-layer growth. The temperature dependence of these measurements also provides information on the mobilities of the admolecules. He atom scattering is unique among surface probes because the low-energy, inert atoms are sensitive only to the electronic structure of the topmost surface layer and are equally applicable to all crystalline materials. It is proposed for the next year to exploit further the variety of combinations possible with the alkali halides in order to carry out a definitive study of epitaxial growth in the ionic insulators. The work completed so far, including measurements of the Bragg diffraction and surface dispersion at various stages of growth, appears to be exceptionally rich in detail, which is particularly promising for theoretical modeling. In addition, because epitaxial growth conditions over a wide range of lattice mismatches is possible with these materials, size effects in growth processes can be explored in great depth. Further, as some of the alkali halides have the CsCl structure instead of the NaCl structure, we can investigate the effects of the heteroepitaxy with materials having different lattice preferences. Finally, by using co-deposition of different alkali halides, one can investigate the formation and stability of alloys and even alkali halide superlattices.

  14. Electronic Correlations, Jahn-Teller Distortions and Mott Transition to Superconductivity in Alkali-C60 Compounds

    Directory of Open Access Journals (Sweden)

    Alloul H.

    2012-03-01

    Full Text Available The discovery in 1991 of high temperature superconductivity (SC in A3C60 compounds, where A is an alkali ion, has been rapidly ascribed to a BCS mechanism, in which the pairing is mediated by on ball optical phonon modes. While this has lead to consider that electronic correlations were not important in these compounds, further studies of various AnC60 with n=1, 2, 4 allowed to evidence that their electronic properties cannot be explained by a simple progressive band filling of the C60 six-fold degenerate t1u molecular level. This could only be ascribed to the simultaneous influence of electron correlations and Jahn-Teller Distortions (JTD of the C60 ball, which energetically favour evenly charged C60 molecules. This is underlined by the recent discovery of two expanded fulleride Cs3C60 isomeric phases which are Mott insulators at ambient pressure. Both phases undergo a pressure induced first order Mott transition to SC with a (p, T phase diagram displaying a dome shaped SC, a common situation encountered nowadays in correlated electron systems. NMR experiments allowed us to study the magnetic properties of the Mott phases and to evidence clear deviations from BCS expectations near the Mott transition. So, although SC involves an electron-phonon mechanism, the incidence of electron correlations has an importance on the electronic properties, as had been anticipated from DMFT calculations.

  15. Insulating phase of potassium clusters arrayed in low-silica-type zeolite FAU

    Science.gov (United States)

    Ikemoto, Y.; Nakano, T.; Kuno, M.; Nozue, Y.; Ikeda, T.

    2001-05-01

    Mutually interacting potassium clusters stabilized in supercages of aluminosilicate zeolite FAU (Si/Al=1), the so-called low-silica X, are investigated in terms of optical and magnetic properties. FAU is ion-exchanged to K, and denoted by K-FAU(1), hereafter. When metal K is adsorbed at the average loading density of 0.7±0.3 atom per supercage of FAU, the observed infrared absorption is more than one order weaker than that in similarly K-loaded samples of K-FAU(1.25) which is called X commonly. The Weiss temperature in K-loaded K-FAU(1) is -33±3 K. This value is several times larger than that in K-loaded K-FAU(1.25). The Mott insulator phase in K clusters in FAU(1), is thought to be realized differently from the metallic phase of K-FAU(1.25).

  16. Investigating compositional effects of atomic layer deposition ternary dielectric Ti-Al-O on metal-insulator-semiconductor heterojunction capacitor structure for gate insulation of InAlN/GaN and AlGaN/GaN

    Energy Technology Data Exchange (ETDEWEB)

    Colon, Albert; Stan, Liliana; Divan, Ralu; Shi, Junxia

    2016-11-01

    Gate insulation/surface passivation in AlGaN/GaN and InAlN/GaN heterojunction field-effect transistors is a major concern for passivation of surface traps and reduction of gate leakage current. However, finding the most appropriate gate dielectric materials is challenging and often involves a compromise of the required properties such as dielectric constant, conduction/valence band-offsets, or thermal stability. Creating a ternary compound such as Ti-Al-O and tailoring its composition may result in a reasonably good gate material in terms of the said properties. To date, there is limited knowledge of the performance of ternary dielectric compounds on AlGaN/GaN and even less on InAlN/GaN. To approach this problem, the authors fabricated metal-insulator-semiconductor heterojunction (MISH) capacitors with ternary dielectrics Ti-Al-O of various compositions, deposited by atomic layer deposition (ALD). The film deposition was achieved by alternating cycles of TiO2 and Al2O3 using different ratios of ALD cycles. TiO2 was also deposited as a reference sample. The electrical characterization of the MISH capacitors shows an overall better performance of ternary compounds compared to the pure TiO2. The gate leakage current density decreases with increasing Al content, being similar to 2-3 orders of magnitude lower for a TiO2:Al2O3 cycle ratio of 2:1. Although the dielectric constant has the highest value of 79 for TiO2 and decreases with increasing the number of Al2O3 cycles, it is maintaining a relatively high value compared to an Al2O3 film. Capacitance voltage sweeps were also measured in order to characterize the interface trap density. A decreasing trend in the interface trap density was found while increasing Al content in the film. In conclusion, our study reveals that the desired high-kappa properties of TiO2 can be adequately maintained while improving other insulator performance factors. The ternary compounds may be an excellent choice as a gate material for both

  17. Stochastic methods for light propagation and recurrent scattering in saturated and nonsaturated atomic ensembles

    Science.gov (United States)

    Lee, Mark D.; Jenkins, Stewart D.; Ruostekoski, Janne

    2016-06-01

    We derive equations for the strongly coupled system of light and dense atomic ensembles. The formalism includes an arbitrary internal-level structure for the atoms and is not restricted to weak excitation of atoms by light. In the low-light-intensity limit for atoms with a single electronic ground state, the full quantum field-theoretical representation of the model can be solved exactly by means of classical stochastic electrodynamics simulations for stationary atoms that represent cold atomic ensembles. Simulations for the optical response of atoms in a quantum degenerate regime require one to synthesize a stochastic ensemble of atomic positions that generates the corresponding quantum statistical position correlations between the atoms. In the case of multiple ground levels or at light intensities where saturation becomes important, the classical simulations require approximations that neglect quantum fluctuations between the levels. We show how the model is extended to incorporate corrections due to quantum fluctuations that result from virtual scattering processes. In the low-light-intensity limit, we illustrate the simulations in a system of atoms in a Mott-insulator state in a two-dimensional optical lattice, where recurrent scattering of light induces strong interatomic correlations. These correlations result in collective many-atom subradiant and superradiant states and a strong dependence of the response on the spatial confinement within the lattice sites.

  18. UV light induced insulator-metal transition in ultra-thin ZnO/TiOx stacked layer grown by atomic layer deposition

    Science.gov (United States)

    Saha, D.; Misra, P.; Joshi, M. P.; Kukreja, L. M.

    2016-08-01

    In the present study, atomic layer deposition has been used to grow a series of Ti incorporated ZnO thin films by vertically stacking different numbers (n = 1-7) of ZnO/TiOx layers on (0001) sapphire substrates. The effects of defect states mediated chemisorption of O2 and/OH groups on the electrical properties of these films have been investigated by illuminating the samples under UV light inside a high vacuum optical cryostat. The ultra-thin film having one stacked layer (n = 1) did not show any change in its electrical resistance upon UV light exposure. On the contrary, marginal drop in the electrical resistivity was measured for the samples with n ≥ 3. Most surprisingly, the sample with n = 2 (thickness ˜ 12 nm) showed an insulator to metal transition upon UV light exposure. The temperature dependent electrical resistivity measurement on the as grown film (n = 2) showed insulating behaviour, i.e., diverging resistivity on extrapolation to T→ 0 K. However, upon UV light exposure, it transformed to a metallic state, i.e., finite resistivity at T → 0 K. Such an insulator-metal transition plausibly arises due to the de-trapping of conduction electrons from the surface defect sites which resulted in an upward shift of the Fermi level above the mobility edge. The low-temperature electron transport properties on the insulating film (n = 2) were investigated by a combined study of zero field electrical resistivity ρ(T) and magnetoresistance (MR) measurements. The observed negative MR was found to be in good agreement with the magnetic field induced suppression of quantum interference between forward-going paths of tunnelling electrons. Both ρ(T) and MR measurements provided strong evidence for the Efros-Shklovskii type variable range hopping conduction in the low-temperature (≤40 K) regime. Such studies on electron transport in ultra-thin n-type doped ZnO films are crucial to achieve optimum functionality with long term reliability of ZnO based transparent

  19. Metal-insulator transition and lattice instability of paramagnetic V{sub 2}O{sub 3}

    Energy Technology Data Exchange (ETDEWEB)

    Leonov, I.; Vollhardt, D. [Theoretical Physics III, Center for Electronic Correlations and Magnetism, University of Augsburg (Germany); Anisimov, V.I. [Institute of Metal Physics, Yekaterinburg (Russian Federation); Ural Federal University, Yekaterinburg (Russian Federation)

    2015-07-01

    We determine the electronic structure and phase stability of paramagnetic V{sub 2}O{sub 3} at the Mott-Hubbard metal-insulator phase transition, by employing a combination of ab initio methods for calculating band structures with dynamical mean-field theory. To explore structural transformations as a function of pressure, we use the experimentally determined atomic positions for the metallic and insulating phases, respectively, and calculate the total energy as a function of volume. We find that the structural stability depends very sensitively on changes of the lattice volume. The structural transformation associated with the metal-insulator transition is found to occur upon a slight expansion of the lattice volume by ∝ 1.5 %, in agreement with experiment. Our results show that the structural change precedes the metal-insulator transition, implying a complex interplay between electronic and lattice degrees of freedom at the transition. Electronic correlations and full charge self-consistency are found to be crucial for a correct description of the properties of V{sub 2}O{sub 3}.

  20. Gate-tuned Superconductor-Insulator transition in (Li,Fe)OHFeSe

    OpenAIRE

    Lei, B; Xiang, Z. J.; Lu, X. F.; Wang, N. Z.; Chang, J. R.; Shang, C.; Luo, X. G.; Wu, T.; Z. Sun; Chen, X. H.

    2015-01-01

    The antiferromagnetic(AFM) insulator-superconductor transition has been always a center of interest in the underlying physics of unconventional superconductors. The quantum phase transition between Mott insulator with AFM and superconductor can be induced by doping charge carriers in high-Tc cuprate superconductors. For the best characterized organic superconductors of k-(BEDT-TTF)2X (X=anion), a first order transition between AFM insulator and superconductor can be tuned by applied external ...

  1. Mott-Anderson Transition in Molecular Conductors: Influence of Randomness on Strongly Correlated Electrons in the κ-(BEDT-TTF2X System

    Directory of Open Access Journals (Sweden)

    Takahiko Sasaki

    2012-05-01

    Full Text Available The Mott-Anderson transition has been known as a metal-insulator (MI transition due to both strong electron-electron interaction and randomness of the electrons. For example, the MI transition in doped semiconductors and transition metal oxides has been investigated up to now as a typical example of the Mott-Anderson transition for changing electron correlations by carrier number control in concurrence with inevitable randomness. On the other hand, molecular conductors have been known as typical strongly correlated electron systems with bandwidth controlled Mott transition. In this paper, we demonstrate our recent studies on the randomness effect of the strongly correlated electrons of the BEDT-TTF molecule based organic conductors. X-ray irradiation on the crystals introduces molecular defects in the insulating anion layer, which cause random potential modulation of the correlated electrons in the conductive BEDT-TTF layer. In combination with hydrostatic pressure, we are able to control the parameters for randomness and correlations for electrons approaching the Mott-Anderson transition.

  2. Processing of n+/p-/p+ strip detectors with atomic layer deposition (ALD) grown Al2O3 field insulator on magnetic Czochralski silicon (MCz-si) substrates

    Science.gov (United States)

    Härkönen, J.; Tuovinen, E.; Luukka, P.; Gädda, A.; Mäenpää, T.; Tuominen, E.; Arsenovich, T.; Junkes, A.; Wu, X.; Li, Z.

    2016-08-01

    Detectors manufactured on p-type silicon material are known to have significant advantages in very harsh radiation environment over n-type detectors, traditionally used in High Energy Physics experiments for particle tracking. In p-type (n+ segmentation on p substrate) position-sensitive strip detectors, however, the fixed oxide charge in the silicon dioxide is positive and, thus, causes electron accumulation at the Si/SiO2 interface. As a result, unless appropriate interstrip isolation is applied, the n-type strips are short-circuited. Widely adopted methods to terminate surface electron accumulation are segmented p-stop or p-spray field implantations. A different approach to overcome the near-surface electron accumulation at the interface of silicon dioxide and p-type silicon is to deposit a thin film field insulator with negative oxide charge. We have processed silicon strip detectors on p-type Magnetic Czochralski silicon (MCz-Si) substrates with aluminum oxide (Al2O3) thin film insulator, grown with Atomic Layer Deposition (ALD) method. The electrical characterization by current-voltage and capacitance-voltage measurement shows reliable performance of the aluminum oxide. The final proof of concept was obtained at the test beam with 200 GeV/c muons. For the non-irradiated detector the charge collection efficiency (CCE) was nearly 100% with a signal-to-noise ratio (S/N) of about 40, whereas for the 2×1015 neq/cm2 proton irradiated detector the CCE was 35%, when the sensor was biased at 500 V. These results are comparable with the results from p-type detectors with the p-spray and p-stop interstrip isolation techniques. In addition, interestingly, when the aluminum oxide was irradiated with Co-60 gamma-rays, an accumulation of negative fixed oxide charge in the oxide was observed.

  3. Correlations in a Band Insulator

    Science.gov (United States)

    Sentef, Michael; Kunes, Jan; Kampf, Arno P.; Werner, Philipp

    2010-03-01

    Using DMFT we find a discontinuous band-to-Mott insulator transition upon an increase in the local Coulomb repulsion in a covalent band insulator [1,2], defined as a band insulator with partially filled local orbitals. The corresponding band gap is a hybridization gap arising from a particular pattern of hopping integrals. Similar characteristics apply to materials such as FeSi, FeSb2 or CoTiSb [3], some of which exhibit temperature dependent magnetic and transport properties reminiscent of Kondo insulators. Both charge and spin gaps in the covalent band insulator shrink with increasing Coulomb repulsion. At moderate interaction strengths the gap renormalization is well described by a renormalization factor analogous to the quasiparticle weight in a Fermi liquid. [4pt] [1] M. Sentef, J. Kunes, P. Werner, and A.P. Kampf, Phys. Rev. B 80, 155116 (2009) [0pt] [2] A.P. Kampf, M. Kollar, J. Kunes, M. Sentef, and D. Vollhardt, arXiv:0910.5126

  4. Quantum phases and dynamics of bosonic atoms trapped in a single-mode optical cavity

    Science.gov (United States)

    Sundar, Bhuvanesh; Mueller, Erich

    2016-05-01

    Motivated by experiments performed by R. Landig et al. (arXiv:1511.00007), we theoretically explore the behavior of bosonic atoms trapped in a single-mode cavity in the presence of a two-dimensional optical lattice. As explained by arXiv:1511.00007, Rayleigh scattering of light from the lattice-inducing beams into the cavity produces infinite-range cavity-mediated interactions between the atoms, leading to competition between superfluid, supersolid, Mott insulating and charge density wave phases. We calculate the phase diagram for a uniform trap using a variation of the Gutzwiller Ansatz. We also calculate the spatial distribution of the different phases in the gas in the presence of a harmonic trap. We explore hysteretic behavior when parameters of the system are changed.

  5. Note: A silicon-on-insulator microelectromechanical systems probe scanner for on-chip atomic force microscopy

    Energy Technology Data Exchange (ETDEWEB)

    Fowler, Anthony G.; Maroufi, Mohammad; Moheimani, S. O. Reza, E-mail: Reza.Moheimani@newcastle.edu.au [School of Electrical Engineering and Computer Science, University of Newcastle, Callaghan, NSW 2308 (Australia)

    2015-04-15

    A new microelectromechanical systems-based 2-degree-of-freedom (DoF) scanner with an integrated cantilever for on-chip atomic force microscopy (AFM) is presented. The silicon cantilever features a layer of piezoelectric material to facilitate its use for tapping mode AFM and enable simultaneous deflection sensing. Electrostatic actuators and electrothermal sensors are used to accurately position the cantilever within the x-y plane. Experimental testing shows that the cantilever is able to be scanned over a 10 μm × 10 μm window and that the cantilever achieves a peak-to-peak deflection greater than 400 nm when excited at its resonance frequency of approximately 62 kHz.

  6. Note: A silicon-on-insulator microelectromechanical systems probe scanner for on-chip atomic force microscopy.

    Science.gov (United States)

    Fowler, Anthony G; Maroufi, Mohammad; Moheimani, S O Reza

    2015-04-01

    A new microelectromechanical systems-based 2-degree-of-freedom (DoF) scanner with an integrated cantilever for on-chip atomic force microscopy (AFM) is presented. The silicon cantilever features a layer of piezoelectric material to facilitate its use for tapping mode AFM and enable simultaneous deflection sensing. Electrostatic actuators and electrothermal sensors are used to accurately position the cantilever within the x-y plane. Experimental testing shows that the cantilever is able to be scanned over a 10 μm × 10 μm window and that the cantilever achieves a peak-to-peak deflection greater than 400 nm when excited at its resonance frequency of approximately 62 kHz.

  7. Chaotic dynamics in nanoscale NbO2 Mott memristors for analogue computing

    Science.gov (United States)

    Kumar, Suhas; Strachan, John Paul; Williams, R. Stanley

    2017-08-01

    At present, machine learning systems use simplified neuron models that lack the rich nonlinear phenomena observed in biological systems, which display spatio-temporal cooperative dynamics. There is evidence that neurons operate in a regime called the edge of chaos that may be central to complexity, learning efficiency, adaptability and analogue (non-Boolean) computation in brains. Neural networks have exhibited enhanced computational complexity when operated at the edge of chaos, and networks of chaotic elements have been proposed for solving combinatorial or global optimization problems. Thus, a source of controllable chaotic behaviour that can be incorporated into a neural-inspired circuit may be an essential component of future computational systems. Such chaotic elements have been simulated using elaborate transistor circuits that simulate known equations of chaos, but an experimental realization of chaotic dynamics from a single scalable electronic device has been lacking. Here we describe niobium dioxide (NbO2) Mott memristors each less than 100 nanometres across that exhibit both a nonlinear-transport-driven current-controlled negative differential resistance and a Mott-transition-driven temperature-controlled negative differential resistance. Mott materials have a temperature-dependent metal-insulator transition that acts as an electronic switch, which introduces a history-dependent resistance into the device. We incorporate these memristors into a relaxation oscillator and observe a tunable range of periodic and chaotic self-oscillations. We show that the nonlinear current transport coupled with thermal fluctuations at the nanoscale generates chaotic oscillations. Such memristors could be useful in certain types of neural-inspired computation by introducing a pseudo-random signal that prevents global synchronization and could also assist in finding a global minimum during a constrained search. We specifically demonstrate that incorporating such

  8. Proximity effects in cold atom artificial graphene

    Science.gov (United States)

    Graß, Tobias; Chhajlany, Ravindra W.; Tarruell, Leticia; Pellegrini, Vittorio; Lewenstein, Maciej

    2017-03-01

    Cold atoms in an optical lattice with brick-wall geometry have been used to mimic graphene, a two-dimensional material with characteristic Dirac excitations. Here we propose to bring such artificial graphene into the proximity of a second atomic layer with a square lattice geometry. For non-interacting fermions, we find that such bilayer system undergoes a phase transition from a graphene-like semi-metal phase, characterized by a band structure with Dirac points, to a gapped band insulator phase. In the presence of attractive interactions between fermions with pseudospin-1/2 degree of freedom, a competition between semi-metal and superfluid behavior is found at the mean-field level. Using the quantum Monte Carlo method, we also investigate the case of strong repulsive interactions. In the Mott phase, each layer exhibits a different amount of long-range magnetic order. Upon coupling both layers, a valence-bond crystal is formed at a critical coupling strength. Finally, we discuss how these bilayer systems could be realized in existing cold atom experiments.

  9. Atomic-layer-deposited Al{sub 2}O{sub 3}-HfO{sub 2} laminated and sandwiched dielectrics for metal-insulator-metal capacitors

    Energy Technology Data Exchange (ETDEWEB)

    Ding Shijin; Zhang, D W; Wang, Likang [State Key Laboratory of ASIC and System, School of Microelectronics, Fudan University, Shanghai 200433 (China)

    2007-02-21

    Metal-insulator-metal (MIM) capacitors with atomic-layer-deposited Al{sub 2}O{sub 3}-HfO{sub 2} laminated and sandwiched dielectrics have been fabricated and electrically compared for analog circuit applications. The experimental results indicate that the laminated dielectrics exhibit much better leakage and breakdown characteristics than the sandwiched ones while maintaining higher capacitance densities and acceptable voltage linearity. In respect of the 1 nm Al{sub 2}O{sub 3} and 10 nm HfO{sub 2} laminated dielectric, the resulting capacitor offers an extremely low leakage current of 2.4 x 10{sup -9} A cm{sup -2} at 8 V and a breakdown electric field of {approx}3.3 MV cm{sup -1} at 125 deg. C together with a capacitance density of {approx}3.1 fF {mu}m{sup -2} and voltage coefficients of capacitance of 100 ppm V{sup -2} and -80 ppm V{sup -1} at 100 kHz. The superiority of the laminated dielectrics correlates with inhibition of HfO{sub 2} crystallization, discontinuity of the grain boundary channels from the top to the bottom and changes of the dielectric electronic properties due to the bonding and polarization effects at the multi-interfaces.

  10. Electrical Characterization of Metal-Insulator-Metal Capacitors with Atomic-Layer-Deposited HfO2 Dielectrics for Radio Frequency Integrated Circuit Application

    Institute of Scientific and Technical Information of China (English)

    HUANG Yu-Jian; HUANG Yue; DING Shi-Jin; ZHANG Wei; LIU Ran

    2007-01-01

    Metal-insulator-metal (MIM) capacitors with atomic-layer-deposited HfO2 dielectric and TaN electrodes are investigated for rf integrated circuit applications. For 12nm HfO2, the fabricated capacitor exhibits a high capacitance density of 15.5fF/μm2 at 100kHz, a small leakage current density of 6.4 × 10-9 A/cm2 at 1.8 V and 125℃, a breakdown electric field of 2.6 MV/cm as well as voltage coefficients of capacitance (VCCs) of 2110ppm/V2 and -824 ppm/V at 100kHz. Further, it is deduced that the conduction mechanism in the high field range is dominated by the Poole-Frenkel emission, and the conduction mechanism in the low field range is possibly related to trap-assisted tunnelling. Finally, comparison of various HfO2 MIM capacitors is present,suggesting that the present MIM capacitor is a promising candidate for future rf integrated circuit application.

  11. Initial Processes of Atomic Layer Deposition of Al2O3 on InGaAs: Interface Formation Mechanisms and Impact on Metal-Insulator-Semiconductor Device Performance

    Directory of Open Access Journals (Sweden)

    Shinichi Takagi

    2012-03-01

    Full Text Available Interface-formation processes in atomic layer deposition (ALD of Al2O3 on InGaAs surfaces were investigated using on-line Auger electron spectroscopy. Al2O3 ALD was carried out by repeating a cycle of Al(CH33 (trimethylaluminum, TMA adsorption and oxidation by H2O. The first two ALD cycles increased the Al KLL signal, whereas they did not increase the O KLL signal. Al2O3 bulk-film growth started from the third cycle. These observations indicated that the Al2O3/InGaAs interface was formed by reduction of the surface oxides with TMA. In order to investigate the effect of surface-oxide reduction on metal-insulator-semiconductor (MIS properties, capacitors and field-effect transistors (FETs were fabricated by changing the TMA dosage during the interface formation stage. The frequency dispersion of the capacitance-voltage characteristics was reduced by employing a high TMA dosage. The high TMA dosage, however, induced fixed negative charges at the MIS interface and degraded channel mobility.

  12. Mott-superfluid transition of q-deformed bosons

    Energy Technology Data Exchange (ETDEWEB)

    Kopeć, T.K., E-mail: kopec@int.pan.wroc.pl

    2015-10-16

    The effect of q-deformation of the bosonic algebra on the Mott-superfluid transition for interacting lattice bosons described by the Bose–Hubbard model is studied using mean-filed theory. It has been shown that the Mott state proliferates and the initial periodicity of the Mott lobes as a function of the chemical potential disappears as the q-deformation increases. The ground state phase diagram as a function of the q-parameter exhibits superfluid order, which intervenes in narrow regions between Mott lobes, demonstrating the new concept of statistically induced quantum phase transition. - Highlights: • We study the effect of q-deformed bosons on superfluid transition. • A mean-field theory is employed. • Bosons can change statistics due to deformation of the commutation rules. • Statistically induced quantum phase transition is found.

  13. Unified understanding of superconductivity and Mott transition in alkali-doped fullerides from first principles.

    Science.gov (United States)

    Nomura, Yusuke; Sakai, Shiro; Capone, Massimo; Arita, Ryotaro

    2015-08-01

    Alkali-doped fullerides A 3C60 (A = K, Rb, Cs) are surprising materials where conventional phonon-mediated superconductivity and unconventional Mott physics meet, leading to a remarkable phase diagram as a function of volume per C60 molecule. We address these materials with a state-of-the-art calculation, where we construct a realistic low-energy model from first principles without using a priori information other than the crystal structure and solve it with an accurate many-body theory. Remarkably, our scheme comprehensively reproduces the experimental phase diagram including the low-spin Mott-insulating phase next to the superconducting phase. More remarkably, the critical temperatures T c's calculated from first principles quantitatively reproduce the experimental values. The driving force behind the surprising phase diagram of A 3C60 is a subtle competition between Hund's coupling and Jahn-Teller phonons, which leads to an effectively inverted Hund's coupling. Our results establish that the fullerides are the first members of a novel class of molecular superconductors in which the multiorbital electronic correlations and phonons cooperate to reach high T c s-wave superconductivity.

  14. Filling- and interaction-driven Mott transition. Quantum cluster calculations within self-energy-functional theory; Fuellungs- und wechselwirkungsabhaengiger Mott-Uebergang. Quanten-Cluster-Rechnungen im Rahmen der Selbstenergiefunktional-Theorie

    Energy Technology Data Exchange (ETDEWEB)

    Balzer, Matthias

    2008-07-01

    The central goal of this thesis is the examination of strongly correlated electron systems on the basis of the two-dimensional Hubbard model. We analyze how the properties of the Mott insulator change upon doping and with interaction strength. The numerical evaluation is done using quantum cluster approximations, which allow for a thermodynamically consistent description of the ground state properties. The framework of self-energy-functional theory offers great flexibility for the construction of cluster approximations. A detailed analysis sheds light on the quality and the convergence properties of different cluster approximations within the self-energy-functional theory. We use the one-dimensional Hubbard model for these examinations and compare our results with the exact solution. In two dimensions the ground state of the particle-hole symmetric model at half-filling is an antiferromagnetic insulator, independent of the interaction strength. The inclusion of short-range spatial correlations by our cluster approach leads to a considerable improvement of the antiferromagnetic order parameter as compared to dynamical mean-field theory. In the paramagnetic phase we furthermore observe a metal-insulator transition as a function of the interaction strength, which qualitatively differs from the pure mean-field scenario. Starting from the antiferromagnetic Mott insulator a filling-controlled metal-insulator transition in a paramagnetic metallic phase can be observed. Depending on the cluster approximation used an antiferromagnetic metallic phase may occur at first. In addition to long-range antiferromagnetic order, we also considered superconductivity in our calculations. The superconducting order parameter as a function of doping is in good agreement with other numerical methods, as well as with experimental results. (orig.)

  15. Davisson-Germer Prize Talk: Many-Body Physics with Atomic Fermions

    Science.gov (United States)

    Hulet, Randall

    2016-05-01

    Ultracold atomic gases confined to optical lattices have proven to be highly versatile and tunable systems for realizing novel quantum states of matter. We are using Fermi gases of 6 Li atoms in our laboratory to explore several goals related to the strong correlations that arise in these systems. We have realized the Hubbard model, which has long been suspected of containing the essential ingredients of high temperature superconductivity. We measured the compressibility of the Mott insulating phase that occurs near half filling (1 atom/site), thus demonstrating the excitation gap of the Mott insulator. Progress in this field, however, has been hampered by an inability to cool to low enough temperatures to achieve the most ambitious goals. To address this problem, we have developed the compensated optical lattice method to enable evaporative cooling in the lattice. With this method, we have cooled the Mott insulator sufficiently far to observe short-range antiferromagnetic correlations using Bragg scattering of light. We are currently exploring new methods for entropy storage and redistribution to achieve even lower entropy in the antiferromagnetic phase. Motivated by the enhancement of quantum correlations in low dimensions, we are also exploring Fermi gases in quasi-one-dimension (1D). A deep 2D optical lattice produces an array of 1D tubes which can be weakly coupled by reducing the lattice depth, thus increasing the lattice hopping t between them. We observe a crossover from 1D-like to 3D-like behavior in the phase separation of a spin-imbalanced Fermi gas with increasing t. While this crossover occurs at a value of t that depends on interaction, we find that the crossover location is universally dependent upon the scaled hopping t /ɛb , where ɛb is the pair binding energy. Finally, I will also report progress on measuring the speed of sound of the charge and spin modes in a 1D Fermi gas. Work supported by an ARO MURI, NSF, and the Robert A Welch Foundation.

  16. Mott transition in the multi-band Hubbard model in infinite dimensions

    Energy Technology Data Exchange (ETDEWEB)

    Ono, Yoshiaki; Bulla, Ralf; Potthoff, Michael

    2003-05-01

    The Mott metal-insulator transition in the multi-band Hubbard model in infinite dimensions is studied by using the linearized dynamical mean-field theory. The critical interaction U{sub c} is obtained analytically. For the symmetric case and for orbital degeneracy M we find U{sub c}=(4M+2){radical}L{sub 2} where L{sub 2} is the second moment of the non-interacting density of states. We also derive an analytical expression for the discontinuity of the chemical potential {mu}(n) at the filling n=M for U>U{sub c}. The findings are in good agreement with numerical results obtained from the exact diagonalization method.

  17. Surface Effects on the Mott-Hubbard Transition in Archetypal V{2}O{3}.

    Science.gov (United States)

    Lantz, G; Hajlaoui, M; Papalazarou, E; Jacques, V L R; Mazzotti, A; Marsi, M; Lupi, S; Amati, M; Gregoratti, L; Si, L; Zhong, Z; Held, K

    2015-12-04

    We present an experimental and theoretical study exploring surface effects on the evolution of the metal-insulator transition in the model Mott-Hubbard compound Cr-doped V{2}O{3}. We find a microscopic domain formation that is clearly affected by the surface crystallographic orientation. Using scanning photoelectron microscopy and x-ray diffraction, we find that surface defects act as nucleation centers for the formation of domains at the temperature-induced isostructural transition and favor the formation of microscopic metallic regions. A density-functional theory plus dynamical mean-field theory study of different surface terminations shows that the surface reconstruction with excess vanadyl cations leads to doped, and hence more metallic, surface states, which explains our experimental observations.

  18. Experimental studies of ions and atoms interaction with insulating surface; Etude experimentale de l'interaction rasante d'atomes et d'ions sur des surfaces isolantes

    Energy Technology Data Exchange (ETDEWEB)

    Villette, J

    2000-10-15

    Grazing collisions (<3 deg.) of keV ions and atoms: H{sup +}, Ne{sup +}, Ne{sup 0}, Na{sup +} on LiF (001) single crystal, an ionic insulator, are investigated by a time of flight technique. The incident beam is chopped and the scattered particles are collected on a position sensitive detector providing differential cross section while the time of flight gives the energy loss. Deflection plates allow the charge state analysis. Secondary electrons are detected in coincidence allowing direct measurements of electron emission yield, angular and energetic distribution through time of flight measurements. The target electronic structure characterized by a large band gap, governs the collisional processes: charge exchange, electronic excitations and electron emission. In particular, these studies show that the population of local target excitations surface excitons is the major contribution to the kinetic energy transfer (stopping power). Auger neutralization of Ne{sup +} and He{sup +} ions reveals the population of quasi-molecular excitons, an exciton bound on two holes. Referenced in the literature as trion. A direct energy balance determines the binding energy associated with these excited states of the surface. Besides these electronic energy loss processes, two nuclear energy loss mechanisms are characterized. These processes imply momentum transfer to individual target atoms during close binary collisions or, if the projectile is charged, to collective mode of optical phonons induced by the projectile coulomb field. The effect of the temperature on the scattering profile, the contribution of topological surface defects to the energy loss profile and to skipping motion on the surface are analyzed in view of classical trajectory simulations. (author)

  19. Proximity effects in cold atom artificial graphene

    CERN Document Server

    Grass, Tobias; Tarruell, Leticia; Pellegrini, Vittorio; Lewenstein, Maciej

    2016-01-01

    Cold atoms in an optical lattice with brick-wall geometry have been used to mimic graphene, a two-dimensional material with characteristic Dirac excitations. Here we propose to bring such artificial graphene into the proximity of a second atomic layer with a square lattice geometry. For non-interacting fermions, we find that such bilayer system undergoes a phase transition from a graphene-like semi-metal phase, characterized by a band structure with Dirac points, to a gapped band insulator phase. In the presence of attractive interactions between fermions with pseudospin-1/2 degree of freedom, a competition between semi-metal and superfluid behavior is found at the mean-field level. Upon tuning the coupling between the layers, the system exhibits re-entrant superfluid phases. Using the quantum Monte Carlo method, we also investigate the case of strong repulsive interactions. In the Mott phase, each layer exhibits a different amount of long-range magnetic order. Upon coupling both layers, a valence-bond crysta...

  20. Coexistence and competition of on-site and intersite Coulomb interactions in Mott-molecular-dimers

    Science.gov (United States)

    Juliano, R. C.; de Arruda, A. S.; Craco, L.

    2016-02-01

    We reveal the interplay between on-site (U) and intersite (V) Coulomb interactions in the extended two-site Hubbard model. Due to its atomic-like form quantum correlations intrinsic to Mott-molecular-dimers are exactly computed. Our results for physical quantities such as double occupancy and specific heat are consistent with those obtained for the one-band Hubbard model, suggesting that a two-site dimer model is able to capture the essential thermodynamic properties of strongly interacting electron systems. It is noted that intersite Coulomb interactions promote the formation of doublons, which compete with the spin-singlet state induced by the on-site Coulomb repulsion. Our results are expected to be relevant for understanding electronic and thermodynamical properties of interacting electrons in systems with strongly coupled magnetic atoms.

  1. Photoinduced Coherent Spin Fluctuation in Primary Dynamics of Insulator to Metal Transition in Perovskite Cobalt Oxide

    Directory of Open Access Journals (Sweden)

    Arima T.

    2013-03-01

    Full Text Available Coherent spin fluctuation was detected in the photoinduced Mott insulator-metal transition in perovskite cobalt oxide by using 3 optical-cycle infrared pulse. Such coherent spin fluctuation is driven by the perovskite distortion changing orbital gap.

  2. Superconductor-insulator transition in the d-p model

    CERN Document Server

    Arimoto, T; Tsuruta, A; Kobayashi, A; Kuroda, Y

    2003-01-01

    We investigate a transition between the superconducting phase and the Mott insulator phase in the d-p model by using the slave-boson method and the 1/N-expansion theory, where the pairing interaction is given by the superexchange interaction J sub s. We show that the competition between the pairing interaction and the Fermi energy induces the transition at finite doping rate. (author)

  3. Quantum critical transport at a continuous metal-insulator transition

    OpenAIRE

    Haldar, P.; Laad, M. S.; Hassan, S. R.

    2016-01-01

    In contrast to the first-order correlation-driven Mott metal-insulator transition (MIT), contin- uous disorder-driven transitions are intrinsically quantum critical. Here, we investigate transport quantum criticality in the Falicov-Kimball model, a representative of the latter class in the "strong disorder" category. Employing cluster-dynamical mean-field theory (CDMFT), we find clear and anomalous quantum critical scaling behavior manifesting as perfect mirror symmetry of scaling curves on b...

  4. Thermal insulator

    Energy Technology Data Exchange (ETDEWEB)

    Yamamoto, R.; Asada, Y.; Matsuo, Y.; Mikoda, M.

    1985-07-16

    A thermal insulator comprises an expanded resin body having embedded therein an evacuated powder insulation portion which consists of fine powder and a container of film-like plastics or a film-like composite of plastics and metal for enclosing the powder. The resin body has been expanded by a Freon gas as a blowing agent. Since a Freon gas has a larger molecular diameter than the constituent gases of air, it is less likely to permeate through the container than air. Thus present invention provides a novel composite insulator which fully utilizes the benefits of vacuum insulation without necessitating a strong and costly material for a vacuum container.

  5. Cellulose Insulation

    Science.gov (United States)

    1980-01-01

    Fire retardant cellulose insulation is produced by shredding old newspapers and treating them with a combination of chemicals. Insulating material is blown into walls and attics to form a fiber layer which blocks the flow of air. All-Weather Insulation's founders asked NASA/UK-TAP to help. They wanted to know what chemicals added to newspaper would produce an insulating material capable of meeting federal specifications. TAP researched the query and furnished extensive information. The information contributed to successful development of the product and helped launch a small business enterprise which is now growing rapidly.

  6. AlGaN/GaN Metal-Insulator-Semiconductor High Electron-Mobility Transistor Using a NbAlO/Al2O3 Laminated Dielectric by Atomic Laver Deposition

    Institute of Scientific and Technical Information of China (English)

    BI Zhi-Wei; YANG Lin-An; MEI Nan; CHANG Yong-Ming; HAO Yue; FENG Qian; GAO Zhi-Yuan; ZHANG Jin-Cheng; MAO Wei; ZHANG Kai; MA Xiao-Hua; LIU Hong-Xia

    2012-01-01

    We investigate the characteristics of AlGaN/GaN metal-insulator-semiconductor high-electron-mobility transistors (MIS-HEMTs) with a NbAlO/Al2O3 lamination dielectric deposited by atomic layer deposition (ALD) as the gate insulator.A large gate voltage swing (GVS) of 3.96 V and a high breakdown voltage of-150 V for the MIS-HEMT were obtained.We present the gate leakage current mechanisms and analyze the reason for the reduction of the leakage current.Compared with traditional HEMTs,the maximum drain current is improved to 960mA/mm,indicating that NbAlO layers could reduce the surface-related depletion of the channel layer and increase the sheet carrier concentration.In addition,the maximum oscillation frequency of 38.8 GHz shows that the NbAlO high-k dielectric can be considered as a potential gate oxide comparable with other dielectric insulators.%We investigate the characteristics of AlGaN/GaN metal-insulator-semiconductor high-electron-mobility transistors (MIS-HEMTs) with a NbAlO/AI2O3 lamination dielectric deposited by atomic layer deposition (ALD) as the gate insulator. A large gate voltage swing (GVS) of 3.96 V and a high breakdown voltage of -150V for the MIS-HEMT were obtained. We present the gate leakage current mechanisms and analyze the reason for the reduction of the leakage current. Compared with traditional HEMTs, the maximum drain current is improved to 960mA/mm, indicating that NbAlO layers could reduce the surface-related depletion of the channel layer and increase the sheet carrier concentration. In addition, the maximum oscillation frequency of 38.8 GHz shows that the NbAlO high-k dielectric can be considered as a potential gate oxide comparable with other dielectric insulators.

  7. Observation of the Mott effect in heavy ion collisions

    Energy Technology Data Exchange (ETDEWEB)

    Gudima, K.; Ploszajczak, M.; Bozek, P.; Danielewicz, P.

    1997-10-01

    The possibility of the observation of the Mott momentum in the distribution of the deuterons produced in the process p + n - d + {gamma} in the first stage of the nuclear collision is presented. The correlation of the hard photon with the deuteron allows to select deuterons produced at the beginning of the collision. (authors).

  8. Foundations of heavy-fermion superconductivity: lattice Kondo effect and Mott physics

    Science.gov (United States)

    Steglich, Frank; Wirth, Steffen

    2016-08-01

    This article overviews the development of heavy-fermion superconductivity, notably in such rare-earth-based intermetallic compounds which behave as Kondo-lattice systems. Heavy-fermion superconductivity is of unconventional nature in the sense that it is not mediated by electron-phonon coupling. Rather, in most cases the attractive interaction between charge carriers is apparently magnetic in origin. Fluctuations associated with an antiferromagnetic (AF) quantum critical point (QCP) play a major role. The first heavy-fermion superconductor CeCu2Si2 turned out to be the prototype of a larger group of materials for which the underlying, often pressure-induced, AF QCP is likely to be of a three-dimensional (3D) spin-density-wave (SDW) variety. For UBe13, the second heavy-fermion superconductor, a magnetic-field-induced 3D SDW QCP inside the superconducting phase can be conjectured. Such a ‘conventional’, itinerant QCP can be well understood within Landau’s paradigm of order-parameter fluctuations. In contrast, the low-temperature normal-state properties of a few heavy-fermion superconductors are at odds with the Landau framework. They are characterized by an ‘unconventional’, local QCP which may be considered a zero-temperature 4 f-orbital selective Mott transition. Here, as concluded for YbRh2Si2, the breakdown of the Kondo effect concurring with the AF instability gives rise to an abrupt change of the Fermi surface. Very recently, superconductivity was discovered for this compound at ultra-low temperatures. Therefore, YbRh2Si2 along with CeRhIn5 under pressure provide a natural link between the large group of about fifty low-temperature heavy-fermion superconductors and other families of unconventional superconductors with substantially higher T c, e.g. the doped Mott insulators of the perovskite-type cuprates and the organic charge-transfer salts.

  9. Foundations of heavy-fermion superconductivity: lattice Kondo effect and Mott physics.

    Science.gov (United States)

    Steglich, Frank; Wirth, Steffen

    2016-08-01

    This article overviews the development of heavy-fermion superconductivity, notably in such rare-earth-based intermetallic compounds which behave as Kondo-lattice systems. Heavy-fermion superconductivity is of unconventional nature in the sense that it is not mediated by electron-phonon coupling. Rather, in most cases the attractive interaction between charge carriers is apparently magnetic in origin. Fluctuations associated with an antiferromagnetic (AF) quantum critical point (QCP) play a major role. The first heavy-fermion superconductor CeCu2Si2 turned out to be the prototype of a larger group of materials for which the underlying, often pressure-induced, AF QCP is likely to be of a three-dimensional (3D) spin-density-wave (SDW) variety. For UBe13, the second heavy-fermion superconductor, a magnetic-field-induced 3D SDW QCP inside the superconducting phase can be conjectured. Such a 'conventional', itinerant QCP can be well understood within Landau's paradigm of order-parameter fluctuations. In contrast, the low-temperature normal-state properties of a few heavy-fermion superconductors are at odds with the Landau framework. They are characterized by an 'unconventional', local QCP which may be considered a zero-temperature 4 f-orbital selective Mott transition. Here, as concluded for YbRh2Si2, the breakdown of the Kondo effect concurring with the AF instability gives rise to an abrupt change of the Fermi surface. Very recently, superconductivity was discovered for this compound at ultra-low temperatures. Therefore, YbRh2Si2 along with CeRhIn5 under pressure provide a natural link between the large group of about fifty low-temperature heavy-fermion superconductors and other families of unconventional superconductors with substantially higher T c, e.g. the doped Mott insulators of the perovskite-type cuprates and the organic charge-transfer salts.

  10. Imaging Dirac-mass disorder from magnetic dopant atoms in the ferromagnetic topological insulator Crx(Bi0.1Sb0.9)2-xTe3.

    Science.gov (United States)

    Lee, Inhee; Kim, Chung Koo; Lee, Jinho; Billinge, Simon J L; Zhong, Ruidan; Schneeloch, John A; Liu, Tiansheng; Valla, Tonica; Tranquada, John M; Gu, Genda; Davis, J C Séamus

    2015-02-03

    To achieve and use the most exotic electronic phenomena predicted for the surface states of 3D topological insulators (TIs), it is necessary to open a "Dirac-mass gap" in their spectrum by breaking time-reversal symmetry. Use of magnetic dopant atoms to generate a ferromagnetic state is the most widely applied approach. However, it is unknown how the spatial arrangements of the magnetic dopant atoms influence the Dirac-mass gap at the atomic scale or, conversely, whether the ferromagnetic interactions between dopant atoms are influenced by the topological surface states. Here we image the locations of the magnetic (Cr) dopant atoms in the ferromagnetic TI Cr0.08(Bi0.1Sb0.9)1.92Te3. Simultaneous visualization of the Dirac-mass gap Δ(r) reveals its intense disorder, which we demonstrate is directly related to fluctuations in n(r), the Cr atom areal density in the termination layer. We find the relationship of surface-state Fermi wavevectors to the anisotropic structure of Δ(r) not inconsistent with predictions for surface ferromagnetism mediated by those states. Moreover, despite the intense Dirac-mass disorder, the anticipated relationship [Formula: see text] is confirmed throughout and exhibits an electron-dopant interaction energy J* = 145 meV·nm(2). These observations reveal how magnetic dopant atoms actually generate the TI mass gap locally and that, to achieve the novel physics expected of time-reversal symmetry breaking TI materials, control of the resulting Dirac-mass gap disorder will be essential.

  11. Mott Electrons in an Artificial Graphenelike Crystal of Rare-Earth Nickelate S.

    Energy Technology Data Exchange (ETDEWEB)

    Middey, Srimanta; Meyers, Derek J.; Doennig, D.; Kareev, M; Liu, Xiaoran; Cao, Yanwei; Yang, Zhenzhong; Shi, Jinan; Gu, Lin; Ryan, Philip J.; Freeland, J. W.; Pentcheva, R.; Chakhalian, J.

    2016-02-05

    Deterministic control over the periodic geometrical arrangement of the constituent atoms is the backbone of the material properties, which, along with the interactions, define the electronic and magnetic ground state. Following this notion, a bilayer of a prototypical rare-earth nickelate, NdNiO3, combined with a dielectric spacer, LaAlO3, has been layered along the pseudocubic [111] direction. The resulting artificial graphenelike Mott crystal with magnetic 3d electrons has antiferromagnetic correlations. In addition, a combination of resonant X-ray linear dichroism measurements and ab initio calculations reveal the presence of an ordered orbital pattern, which is unattainable in either bulk nickelates or nickelate based heterostructures grown along the [001] direction. These findings highlight another promising venue towards designing new quantum many-body states by virtue of geometrical engineering.

  12. Hartee Fock Symmetry Breaking Effects in La2CuO4: Hints for connecting the Mott and Slater Pictures and Pseudogap Prediction

    Directory of Open Access Journals (Sweden)

    Alejandro Cabo Montes de Oca

    2010-03-01

    Full Text Available This work expands the results and derivations presented in a recent letter. It is argued that symmetry breaking Hartree-Fock (HF solutions of a simple model of the Cu-O planes in La2CuO4, are able to describe the insulator and antiferromagnetic characters of this material. Then, this classical primer of a Mott insulator is alternatively obtained here as an exact Slater insulator within the simplest of the first principles schemes. Moreover, pseudogap HF states are also predicted. The maximal energy gap of 100 meV over the Fermi surface of this wavefunction, reasonably well matches the ARPES upper pseudogap measurements for La2CuO4 in the zero doping limit. These surprising results followed after eliminating spin and crystal symmetry constraints usually imposed on the HF orbitals. The discussion helps to clarify the role of the antiferromagnetism and pseudogaps in the physics of the HTSC materials and indicates a promising way to start conciliating the Mott and Slater pictures for the description of the transition metal oxides.

  13. Imaging Dirac-Mass Disorder from Magnetic Dopant-Atoms in the Ferromagnetic Topological Insulator Crx(Bi0.1Sb0.9)2-x Te3 - Part I

    Science.gov (United States)

    Kim, Chung Koo; Lee, Inhee; Lee, Jinho; Billinge, Simon; Zhong, Ruidan; Schneeloch, John; Liu, Tiansheng; Tranquada, John; Gu, Genda; Davis, J. C. Seamus

    2015-03-01

    Topological insulators (TI) have a gapless surface state of Dirac fermions protected by the time reversal symmetry (TRS). However, TRS can be broken in the ferromagnetic state induced by magnetic doping. This leads to the opening of ``mass gap'' at the Dirac point. Such a gap is predicted to involve many exotic phenomena for which understanding the microscopic role of magnetic dopants is critical. But it is unknown how the spatial arrangements of the magnetic dopant atoms influence the Dirac-mass gap at the atomic scale. Here we image the locations of the magnetic (Cr) dopant atoms in the ferromagnetic TI Cr0.08(Bi0.1Sb0.9)1.92 Te3. Simultaneous visualization of the Dirac-mass gap Δ(r) reveals its intense disorder, which we demonstrate directly is related to fluctuations in n(r), the areal Cr atom density at the surface. The relationship of the surface-state Fermi wavevectors to both the correlation length and anisotropic structure of Δ(r) are found consistent with predictions for ferromagnetism mediated by the surface states.

  14. Superfluid-insulator transition in a disordered two-dimensional quantum rotor model with random on-site interactions

    Science.gov (United States)

    An, Taeyang; Cha, Min-Chul

    2013-03-01

    We study the superfluid-insulator quantum phase transition in a disordered two-dimensional quantum rotor model with random on-site interactions in the presence of particle-hole symmetry. Via worm-algorithm Monte Carlo calculations of superfluid density and compressibility, we find the dynamical critical exponent z ~ 1 . 13 (2) and the correlation length critical exponent 1 / ν ~ 1 . 1 (1) . These exponents suggest that the insulating phase is a incompressible Mott glass rather than a Bose glass.

  15. Band to Mott transition in the infinite dimensional Holstein model

    CERN Document Server

    Hague, J P

    2001-01-01

    down at intermediate couplings in the limit of low phonon frequency where it is supposed to be most applicable. By examining the effective hopping and renormalized phonon frequency, I suggest an intuitive explanation for the breakdown of Migdal-Eliashberg theory. For completeness, a description of the breakdown of Migdal's theorem in the limit of high phonon frequency is considered via the Lang-Firsov canonical transformation. The Holstein model can be seen as providing an interpolation scheme between Hubbard-like and Falicov-Kimball like behaviour and it may therefore help elucidate the nature of the transition between band and Mott states. I describe a number of approximations to the self-energy. By comparing these with results from the exact solution in various limits, I find that a second order iterated perturbation scheme may be capable of describing the intermediate behaviour. Application of this method reveals a strongly renormalized hybrid behaviour between band and miniature-Mott states, with unusual...

  16. Mott scattering of polarized electrons in a strong laser field

    CERN Document Server

    Manaut, B; Attaourti, Y

    2004-01-01

    We present analytical and numerical results of the relativistic calculation of the transition matrix element $S_{fi}$ and differential cross section for Mott scattering of initially polarized Dirac particles (electrons) in the presence of strong laser field with linear polarization. We use exact Dirac-Volkov wave functions to describe the dressed electrons and the collision process is treated in the first Born approximation. The influence of the laser field on the degree of polarization of the scattered electron is reported.

  17. Tuning bad metal and non-Fermi liquid behavior in a Mott material: Rare-earth nickelate thin films.

    Science.gov (United States)

    Mikheev, Evgeny; Hauser, Adam J; Himmetoglu, Burak; Moreno, Nelson E; Janotti, Anderson; Van de Walle, Chris G; Stemmer, Susanne

    2015-11-01

    Resistances that exceed the Mott-Ioffe-Regel limit (known as bad metal behavior) and non-Fermi liquid behavior are ubiquitous features of the normal state of many strongly correlated materials. We establish the conditions that lead to bad metal and non-Fermi liquid phases in NdNiO3, which exhibits a prototype bandwidth-controlled metal-insulator transition. We show that resistance saturation is determined by the magnitude of Ni eg orbital splitting, which can be tuned by strain in epitaxial films, causing the appearance of bad metal behavior under certain conditions. The results shed light on the nature of a crossover to a non-Fermi liquid metal phase and provide a predictive criterion for Anderson localization. They elucidate a seemingly complex phase behavior as a function of film strain and confinement and provide guidelines for orbital engineering and novel devices.

  18. Large epitaxial bi-axial strain induces a Mott-like phase transition in VO{sub 2}

    Energy Technology Data Exchange (ETDEWEB)

    Kittiwatanakul, Salinporn [Department of Physics, University of Virginia, Charlottesville, Virginia 22904 (United States); Wolf, Stuart A. [Department of Physics, University of Virginia, Charlottesville, Virginia 22904 (United States); Department of Materials Science and Engineering, University of Virginia, Charlottesville, Virginia 22904 (United States); Lu, Jiwei, E-mail: jl5tk@virginia.edu [Department of Materials Science and Engineering, University of Virginia, Charlottesville, Virginia 22904 (United States)

    2014-08-18

    The metal insulator transition (MIT) in vanadium dioxide (VO{sub 2}) has been an important topic for recent years. It has been generally agreed upon that the mechanism of the MIT in bulk VO{sub 2} is considered to be a collaborative Mott-Peierls transition, however, the effect of strain on the phase transition is much more complicated. In this study, the effect of the large strain on the properties of VO{sub 2} films was investigated. One remarkable result is that highly strained epitaxial VO{sub 2} thin films were rutile in the insulating state as well as in the metallic state. These highly strained VO{sub 2} films underwent an electronic phase transition without the concomitant Peierls transition. Our results also show that a very large tensile strain along the c-axis of rutile VO{sub 2} resulted in a phase transition temperature of ∼433 K, much higher than in any previous report. Our findings elicit that the metal insulator transition in VO{sub 2} can be driven by an electronic transition alone, rather the typical coupled electronic-structural transition.

  19. Wool insulation

    Energy Technology Data Exchange (ETDEWEB)

    O`Shea, Angus

    1995-05-01

    Wool insulation usually comes in two forms, as loose fill or batts. The reliability of loose fill as an insulator, the thickness of batts and the wool`s vulnerability to insect and moth attack are considered to be problems. The purpose of this research was to create a commercial wool insulation product to overcome these limitations, at the same time withstanding the Australian and international standards for fire resistance. The project also considered the market potential of such a product with a view to commercialization. The loft or thickness problem was resolved by covering the wool with an oven baked adhesive. A fire retardant and anti-insect treatment was incorporated into the spray process to produce a viable product.

  20. Radiation Insulation

    Science.gov (United States)

    1995-01-01

    The Apollo and subsequent spacecraft have had highly effective radiation barriers; made of aluminized polymer film, they bar or let in heat to maintain consistent temperatures inside. Tech 2000, formerly Quantum International Corporation used the NASA technology in its insulating materials, Super "Q" Radiant Barrier, for home, industry and mobile applications. The insulation combines industrial aluminum foil overlaid around a core of another material, usually propylene or mylar. The outer layer reflects up to 97 percent of heat; the central layer creates a thermal break in the structure and thus allows low radiant energy emission. The Quantum Cool Wall, used in cars and trucks, takes up little space while providing superior insulation, thus reducing spoilage and costs. The panels can also dampen sound and engine, exhaust and solar heat.

  1. Phase fluctuation in overdoped cuprates? Superconducting dome due to Mott-ness of the tightly bound preformed pairs

    Science.gov (United States)

    Ku, Wei; Yang, Fan

    2015-03-01

    In contrast to the current lore, we demonstrate that even the overdoped cuprates suffer from superconducting phase fluctuation in the strong binding limit. Specifically, the Mott-ness of the underlying doped holes dictates naturally a generic optimal doping around 15% and nearly complete loss of phase coherence around 25%, giving rise to a dome shape of superconducting transition temperature in excellent agreement with experimental observations of the cuprates. We verify this effect with a simple estimation using Gutzwiller approximation of the preformed pairs, obtained through variational Monte Carlo calculation. This realization suggests strongly the interesting possibility that the high-temperature superconductivity in the cuprates might be mostly described by Bose-Einstein condensation, without crossing over to amplitude fluctuating Cooper pairs. Supported by Department of Energy, Office of Basic Energy Science DE-AC02-98CH10886.

  2. James C. McGroddy Prize for New Materials Talk: What is new in multiferroicity?: Mott ferroelectrics!

    Science.gov (United States)

    Cheong, Sang-Wook

    2010-03-01

    Multiferroicity is an old topic. For example, linear magnetoelectric effect in materials such as Cr2O3 with broken time reversal and space inversion symmetry has been known since 1960's. However, giant cross-coupling effects such as flipping polarization or enormous change of dielectric constant by applied magnetic fields have been recently observed in systems such as Tb(Dy)MnO3 and Tb(Dy)Mn2O5 [1-3]. The important ingredient for these giant magnetoelectric effects turns out to be associated with the presence of non-zero d electrons and their mutual interactions, leading to the Mott-insulator-type charge gap, magnetism, and collective phase transitions. Particularly, the collective nature of simultaneous magnetic-ferroelectric phase transitions results in the giant magnetoelectric effects. In addition, fascinating charge transport properties such as a switchable photovoltaic effect and characteristic conduction properties at domain walls stem from the (carrier-doped) Mott insulating nature of compounds such as BiFeO3 and hexagonal YMnO3 [4,5]. [4pt] [1] Kimura, T. et al. Magnetic control of ferroelectric polarization. Nature 426, 55--58 (2003).[0pt] [2] Hur, N. et al. Electric polarization reversal and memory in a multiferroic material induced by magnetic fields. Nature 429, 392--395 (2004).[0pt] [3] Cheong, S.-W. & Mostovoy, M. Multiferroics: a magnetic twist for ferroelectricity. Nature Mater. 6, 13--20 (2007).[0pt] [4] Seidel, J. et al. Conduction at domain walls in oxide multiferroics. Nature Mater. 8, 229--234 (2009).[0pt] [5] Choi, T., Lee, S., Choi, Y.J., Kiryukhin, V. & Cheong, S.-W. Switchable ferroelectric diode and photovoltaic effect in BiFeO3. Science 324, 63--66 (2009)

  3. Topological insulators

    CERN Document Server

    Franz, Marcel

    2013-01-01

    Topological Insulators, volume six in the Contemporary Concepts of Condensed Matter Series, describes the recent revolution in condensed matter physics that occurred in our understanding of crystalline solids. The book chronicles the work done worldwide that led to these discoveries and provides the reader with a comprehensive overview of the field. Starting in 2004, theorists began to explore the effect of topology on the physics of band insulators, a field previously considered well understood. However, the inclusion of topology brings key new elements into this old field. Whereas it was

  4. Ambient organic molecular passivation of Si yields near-ideal, Schottky-Mott limited, junctions

    Directory of Open Access Journals (Sweden)

    Rotem Har-Lavan

    2012-03-01

    Full Text Available We report near-perfect transfer of the electrical properties of oxide-free Si surface, modified by a molecular monolayer, to the interface of a junction made with that modified Si surface. Such behavior is highly unusual for a covalent, narrow bandgap semiconductor, such as Si. Short, ambient atmosphere, room temperature treatment of oxide-free Si(100 in hydroquinone (HQ/alkyl alcohol solutions, fully passivates the Si surface, while allowing controlled change of the resulting surface potential. The junctions formed, upon contacting such surfaces with Hg, a metal that does not chemically interact with Si, follow the Schottky-Mott model for metal-semiconductor junctions closer than ever for Si-based junctions. Two examples of such ideal behavior are demonstrated: a Tuning the molecular surface dipole over 400 mV, with only negligible band bending, by changing the alkyl chain length. Because of the excellent passivation this yields junctions with Hg with barrier heights that follow the change in the Si effective electron affinity nearly ideally. b HQ/ methanol passivation of Si is accompanied by a large surface dipole, which suffices, as interface dipole, to drive the Si into strong inversion as shown experimentally via its photovoltaic effect. With only ∼0.3 nm molecular interlayer between the metal and the Si, our results proves that it is passivation and prevention of metal-semiconductor interactions that allow ideal metal-semiconductor junction behavior, rather than an insulating transport barrier.

  5. Bosonic analogs of the fractional quantum Hall state in the vicinity of Mott states

    Science.gov (United States)

    Kuno, Yoshihito; Shimizu, Keita; Ichinose, Ikuo

    2017-01-01

    In this paper, the Bose-Hubbard model (BHM) with the nearest-neighbor (NN) repulsions is studied from the viewpoint of possible bosonic analogs of the fractional quantum Hall (FQH) state in the vicinity of the Mott insulator (MI). First, by means of the Gutzwiller approximation, we obtain the phase diagram of the BHM in a magnetic field. Then, we introduce an effective Hamiltonian describing excess particles on a MI and calculate the vortex density, momentum distribution, and the energy gap. These calculations indicate that the vortex solid forms for small NN repulsions, but a homogeneous featureless "Bose metal" takes the place of it as the NN repulsion increases. We consider particular filling factors at which the bosonic FQH state is expected to form. Chern-Simons (CS) gauge theory to the excess particle is introduced, and a modified Gutzwiller wave function, which describes bosons with attached flux quanta, is introduced. The energy of the excess particles in the bosonic FQH state is calculated using that wave function, and it is compared with the energy of the vortex solid and Bose metal. We found that the energy of the bosonic FQH state is lower than that of the Bose metal and comparable with the vortex solid. Finally, we clarify the condition that the composite fermion appears by using CS theory on the lattice that we previously proposed for studying the electron FQH effect.

  6. Anisotropic Harper-Hofstadter-Mott model: Competition between condensation and magnetic fields

    Science.gov (United States)

    Hügel, Dario; Strand, Hugo U. R.; Werner, Philipp; Pollet, Lode

    2017-08-01

    We derive the reciprocal cluster mean-field method to study the strongly interacting bosonic Harper-Hofstadter-Mott model. The system exhibits a rich phase diagram featuring band insulating, striped superfluid, and supersolid phases. Furthermore, for finite hopping anisotropy, we observe gapless uncondensed liquid phases at integer fillings, which are analyzed by exact diagonalization. The liquid phases at fillings ν =1 ,3 exhibit the same band fillings as the fermionic integer quantum Hall effect, while the phase at ν =2 is C T -symmetric with zero charge response. We discuss how these phases become gapped on a quasi-one-dimensional cylinder, leading to a quantized Hall response, which we characterize by introducing a suitable measure for nontrivial many-body topological properties. Incompressible metastable states at fractional filling are also observed, indicating competing fractional quantum Hall phases. The combination of reciprocal cluster mean-field and exact diagonalization yields a promising method to analyze the properties of bosonic lattice systems with nontrivial unit cells in the thermodynamic limit.

  7. Mott transition in CaFe2O4 at around 50 GPa

    Science.gov (United States)

    Greenberg, Eran; Rozenberg, Gregory Kh.; Xu, Weiming; Pasternak, Moshe P.; McCammon, Catherine; Glazyrin, Konstantin; Dubrovinsky, Leonid S.

    2013-12-01

    Electrical transport and magnetic properties of CaFe2O4 have been studied at pressures up to 70 GPa using Fe57 Mössbauer spectroscopy (MS), Raman spectroscopy, and electrical resistance measurements. These studies have shown the onset of the Mott transition (MT) at a pressure of around 50 GPa, leading to the collapse of Fe3+ magnetic moments and to the insulator-metal (IM) transition. The observed onset of the MT corroborates with the recently reported isostructural transition accompanied by a 12% decrease in the Fe polyhedral volume. An analysis of the alterations of the electrical transport, magnetic, and structural properties with pressure increase and at the transition range suggests that the coinciding IM transition, magnetic moment, and volume collapse at around 50 GPa are caused by the closure of the Hubbard gap driven by the high-spin to low-spin (HS-LS) transition. At that, since MS did not reveal any evidence of a preceding LS state, it could be inferred that the HS-LS transition immediately leads to an IM transition and complete collapse of magnetism.

  8. Tuning the Dirac cone of the topological insulator Bi{sub 2}Te{sub 3} thin films by substitutional nonmagnetic atoms

    Energy Technology Data Exchange (ETDEWEB)

    Liu, Wenliang; Zhang, Zhen [Hunan Key Laboratory of Micro-Nano Energy Materials and Devices, Xiangtan University, Xiangtan 411105, Hunan (China); Laboratory for Quantum Engineering and Micro-Nano Energy Technology and Faculty of Materials and Optoelectronic Physics, Xiangtan University, Xiangtan 411105, Hunan (China); Peng, Xiangyang, E-mail: xiangyang_peng@xtu.edu.cn [Hunan Key Laboratory of Micro-Nano Energy Materials and Devices, Xiangtan University, Xiangtan 411105, Hunan (China); Laboratory for Quantum Engineering and Micro-Nano Energy Technology and Faculty of Materials and Optoelectronic Physics, Xiangtan University, Xiangtan 411105, Hunan (China); Zhong, Jianxin, E-mail: jxzhong@xtu.edu.cn [Hunan Key Laboratory of Micro-Nano Energy Materials and Devices, Xiangtan University, Xiangtan 411105, Hunan (China); Laboratory for Quantum Engineering and Micro-Nano Energy Technology and Faculty of Materials and Optoelectronic Physics, Xiangtan University, Xiangtan 411105, Hunan (China)

    2015-01-01

    Based on first‐principles calculations, it is found that the Dirac cone of Bi{sub 2}Te{sub 3} film, which is buried in the bulk valence bands, can be tuned by the substitutional nonmagnetic atoms. It is found that substituting the Bi layer at the two ends of Bi{sub 2}Te{sub 3} films with group III atoms Al, Ga, In and Tl, which have lower electronegativity than Bi atoms, can lead to an isolated Dirac cone with the Dirac point shifted into the bulk band gap and located on the Fermi level. Substituting the more electronegative Se, S and O atoms for Te atoms at the top and bottom layers of Bi{sub 2}Te{sub 3} film, only the most electronegative O atoms give rise to a nearly ideal Dirac cone. The charge distribution of the resulting isolated Dirac point state is concentrated at the Te layers facing the van der Waals layers and vanishes in the middle of the quintuple layers.

  9. Ab initio study of the adsorption, diffusion, and intercalation of alkali metal atoms on the (0001) surface of the topological insulator Bi{sub 2}Se{sub 3}

    Energy Technology Data Exchange (ETDEWEB)

    Ryabishchenkova, A. G., E-mail: ryaange@gmail.com; Otrokov, M. M.; Kuznetsov, V. M.; Chulkov, E. V. [Tomsk State University (Russian Federation)

    2015-09-15

    Ab initio study of the adsorption, diffusion, and intercalation of alkali metal adatoms on the (0001) step surface of the topological insulator Bi{sub 2}Se{sub 3} has been performed for the case of low coverage. The calculations of the activation energies of diffusion of adatoms on the surface and in van der Waals gaps near steps, as well as the estimate of diffusion lengths, have shown that efficient intercalation through steps is possible only for Li and Na. Data obtained for K, Rb, and Cs atoms indicate that their thermal desorption at high temperatures can occur before intercalation. The results have been discussed in the context of existing experimental data.

  10. Translucent Insulation

    DEFF Research Database (Denmark)

    Rahbek, Jens Eg

    1998-01-01

    Two new types of translucent materials are presented. One is translucent fiber insulation and the other type is a new type of hony-comb made of Celulose-acetat. Data for the materials and calculations of energy savings when using the materials in building envelopes are presented....

  11. Novel Transitions in Doped Mott-Insulator KxCoO2

    Institute of Scientific and Technical Information of China (English)

    杨海朋; 鲁希锋; 闻海虎

    2003-01-01

    By measuring the temperature dependence of the magnetic susceptibility, two distinct transitions have been observed in potassium doped cobalt oxide KxCoO2 (x = 0.2-1.0). The transition around 125 K corresponds to a phase transition between a weak ferromagnetic plus a strong superparamagnetic phase (below 125 K) and a superparamagnetic phase (above 125K). The susceptibility above the Curie point Tc cannot be described by the Curie-Weise law, being consistent with the superparamagnetism. Magnetization-hysteresis-loops have been measured in different temperature regions to uncover the underlying physics. The second transition near 30.8K shows a strong novelty.

  12. Evolution of Bond-Order-Wave Phase in One-Dimensional Mott Insulators

    Institute of Scientific and Technical Information of China (English)

    HUANG Xiao-Xuan; PAN Zheng-Quan; XU Zhao-Xin; DAI Jian-Hui; YING He-Ping

    2006-01-01

    In this paper, by using the level spectroscopy method and bosonization theory, we discuss the evolution of the bond-order-wave (BOW) phase in a one-dimensional half-filled extended Hubbard model with the on-site Coulomb repulsion U as well as the inter-site Coulomb repulsion V and antiferromagnetic exchange J. After clarifying the generic phase diagrams in three limiting cases with one of the parameters being fixed at zero individually, we find that the BOW phase in the U-V phase diagram is initially enlarged as J increases from zero but is eventually suppressed as J increases further in the strong-coupling regime. A three-dimensional phase diagram is suggested where the BOW phase exists in an extended region separated from the spin-density-wave and charge-density-wave phases.

  13. Mott-Hubbard and Anderson metal-insulator transitions in correlated lattice fermions with binary disorder

    OpenAIRE

    Semmler, Denis; Byczuk, Krzysztof; Hofstetter, Walter

    2009-01-01

    Strongly correlated fermions in a crystal or in an optical lattice in the presence of binary alloy disorder are investigated. We employ the statistical dynamical mean-field theory, which incorporates both, local fluctuations due to disorder and local correlations due to interaction, to solve the Anderson-Hubbard model. Localization due to disorder is studied by means of the probability distribution function of the local density of states. We obtain a complete paramagnetic ground state phase d...

  14. Magnetism and local symmetry breaking in a Mott insulator with strong spin orbit interactions

    Science.gov (United States)

    Lu, L.; Song, M.; Liu, W.; Reyes, A. P.; Kuhns, P.; Lee, H. O.; Fisher, I. R.; Mitrović, V. F.

    2017-01-01

    Study of the combined effects of strong electronic correlations with spin-orbit coupling (SOC) represents a central issue in quantum materials research. Predicting emergent properties represents a huge theoretical problem since the presence of SOC implies that the spin is not a good quantum number. Existing theories propose the emergence of a multitude of exotic quantum phases, distinguishable by either local point symmetry breaking or local spin expectation values, even in materials with simple cubic crystal structure such as Ba2NaOsO6. Experimental tests of these theories by local probes are highly sought for. Our local measurements designed to concurrently probe spin and orbital/lattice degrees of freedom of Ba2NaOsO6 provide such tests. Here we show that a canted ferromagnetic phase which is preceded by local point symmetry breaking is stabilized at low temperatures, as predicted by quantum theories involving multipolar spin interactions. PMID:28181502

  15. Mott transitions in a three-component Falicov-Kimball model: A slave boson mean-field study

    Science.gov (United States)

    Le, Duc-Anh; Tran, Minh-Tien

    2015-05-01

    Metal-insulator transitions in a three-component Falicov-Kimball model are investigated within the Kotliar-Ruckenstein slave boson mean-field approach. The model describes a mixture of two interacting fermion atom species loaded into an optical lattice at ultralow temperature. One species is two-component atoms, which can hop in the optical lattice, and the other is single-component atoms, which are localized. Different correlation-driven metal-insulator transitions are observed depending on the atom filling conditions and local interactions. These metal-insulator transitions are classified by the band renormalization factors and the double occupancies of the atom species. The filling conditions and the critical value of the local interactions for these metal-insulator transitions are also analytically established. The obtained results not only are in good agreement with the dynamical mean-field theory for the three-component Falicov-Kimball model but also clarify the nature and properties of the metal-insulator transitions in a simple physics picture.

  16. Critical behavior in the hydrogen insulator-metal transition

    Science.gov (United States)

    Hemley, R. J.; Mao, H. K.

    1990-01-01

    The vibrational Raman spectrum of solid hydrogen has been measured from 77 to 295 K in the vicinity of the recently observed insulator-metal transition and low-temperature phase transition at 150 gigapascals. The measurements provide evidence for a critical point in the pressure-temperature phase boundary of the low-temperature transition. The result suggests that below the critical temperature the insulator-metal transition changes from continuous to discontinuous, consistent with the general criteria originally proposed by Mott (1949) for metallization by band-gap closure. The effect of temperature on hydrogen metallization closely resembles that of the lower-pressure insulator-metal transitions in doped V2O3 alloys.

  17. Disorder-Driven Metal-Insulator Transitions in Deformable Lattices

    Science.gov (United States)

    Di Sante, Domenico; Fratini, Simone; Dobrosavljević, Vladimir; Ciuchi, Sergio

    2017-01-01

    We show that, in the presence of a deformable lattice potential, the nature of the disorder-driven metal-insulator transition is fundamentally changed with respect to the noninteracting (Anderson) scenario. For strong disorder, even a modest electron-phonon interaction is found to dramatically renormalize the random potential, opening a mobility gap at the Fermi energy. This process, which reflects disorder-enhanced polaron formation, is here given a microscopic basis by treating the lattice deformations and Anderson localization effects on the same footing. We identify an intermediate "bad insulator" transport regime which displays resistivity values exceeding the Mott-Ioffe-Regel limit and with a negative temperature coefficient, as often observed in strongly disordered metals. Our calculations reveal that this behavior originates from significant temperature-induced rearrangements of electronic states due to enhanced interaction effects close to the disorder-driven metal-insulator transition.

  18. Field effect transistor with HfO2/Parylene-C bilayer hybrid gate insulator

    Science.gov (United States)

    Kumar, Neeraj; Kito, Ai; Inoue, Isao

    2015-03-01

    We have investigated the electric field control of the carrier density and the mobility at the surface of SrTiO3, a well known transition-metal oxide, in a field effect transistor (FET) geometry. We have used a Parylene-C (8 nm)/HfO2 (20 nm) double-layer gate insulator (GI), which can be a potential candidate for a solid state GI for the future Mott FETs. So far, only examples of the Mott FET used liquid electrolyte or ferroelectric oxides for the GI. However, possible electrochemical reaction at the interface causes damage to the surface of the Mott insulator. Thus, an alternative GI has been highly desired. We observed that even an ultra thin Parylene-C layer is effective for keeping the channel surface clean and free from oxygen vacancies. The 8 nm Parylene-C film has a relatively low resistance and consequentially its capacitance does not dominate the total capacitance of the Parylene-C/HfO2 GI. The breakdown gate voltage at 300 K is usually more than 10 V (~ 3.4 MV/cm). At gate voltage of 3 V the carrier density measured by the Hall effect is about 3 ×1013 cm-2, competent to cause the Mott transition. Moreover, the field effect mobility reaches in the range of 10 cm2/Vs indicating the Parylene-C passivated surface is actually very clean.

  19. Uma historiadora militante: Maria Lúcia Mott (1948-2011)

    OpenAIRE

    Martins,Ana Paula Vosne

    2013-01-01

    Este artigo é uma homenagem à memória de Maria Lúcia Mott, historiadora que tem seu nome e sua produção acadêmica ligados à história das mulheres e, particularmente, à história do parto, das parteiras, das instituições de saúde e da filantropia. Partindo da trajetória acadêmica da historiadora colocamos em relevo os temas de seus estudos e as principais publicações que a destacaram como uma pesquisadora incansável, criativa e comprometida com a investigação histórica.

  20. Metal-insulator transitions in LaTiO3 / CaTiO3 superlattices

    Science.gov (United States)

    Seo, Sung Seok A.; Lee, Ho Nyung

    2010-03-01

    Strongly correlated electrons at an interface of complex oxide heterostructures often show interesting behaviors that require an introduction of new physical concepts. For example, the metallic transport behavior found in the superlattices of a Mott insulator LaTiO3 and a band insulator SrTiO3 (STO) has established the concept of interfacial electronic reconstruction. In this work, we have studied the transport property of a new type of Mott/band insulator LaTiO3/CaTiO3 (LTO/CTO) superlattices grown by pulsed laser deposition (PLD). In order to rule out concerns about the PLD plume-triggered oxygen vacancies generated in STO substrates, which might influence transport measurement, and to investigate the effect of epitaxial strain, we have used insulating NdGaO3 substrates. While both LTO and CTO single films are highly insulating, we have observed intriguing metal-insulator transitions (MIT) in the LTO/CTO superlattices depending on the global LTO/CTO thickness ratio and temperature. (Note that LTO/STO superlattices are metallic at all temperatures (2-300 K)). In this talk, we will discuss the origin of the MIT in the scheme of self compensation mechanism of d-electrons at the hetero-interface between LTO and CTO.

  1. Mott dissociation of pions and kaons in hot quark matter

    CERN Document Server

    Dubinin, A; Blaschke, D; Wergieluk, A

    2016-01-01

    We describe the Mott dissociation of pions and kaons within a Beth-Uhlenbeck approach based on the PNJL model, which allows for a unified description of bound, resonant and scattering states. Within this model we evaluate the temperature and chemical potential dependent modification of the phase shifts both in the pseudoscalar and scalar isovector meson channels for $N_f=2+1$ quark flavors. We show that the character change of the pseudoscalar bound states to resonances in the continuum at the Mott transition temperature is signaled by a jump of the phase shift at the threshold from $\\pi$ to zero, in accordance with the Levinson theorem. In particular, we demonstrate the importance of accounting for the scattering continuum states, which ensures that the total phase shift in each of the meson channels vanishes at high energies, thus eliminating mesonic correlations from the thermodynamics at high temperatures. In this way, we prove that the present approach provides a unified description of the transition fro...

  2. Mott glass phase in a diluted bilayer Heisenberg quantum antiferromagnet

    Science.gov (United States)

    Ma, Nv-Sen; Sandvik, Anders W.; Yao, Dao-Xin

    2015-09-01

    We use quantum Monte Carlo simulations to study a dimer-diluted S = 1/2 Heisenberg model on a bilayer square lattice with intralayer interaction J1 and interlayer interaction J2. Below the classical percolation threshold pc, the system has three phases reachable by tuning the interaction ratio g = J2/J1: a Néel ordered phase, a gapless quantum glass phase, and a gapped quantum paramagnetic phase. We present the ground-state phase diagram in the plane of dilution p and interaction ratio g. The quantum glass phase is certified to be of the gapless Mott glass type, having a uniform susceptibility vanishing at zero temperature T and following a stretched exponential form at T > 0; χu exp(-b/Tα) with α < 1. At the phase transition point from Neel ordered to Mott glass, we find that the critical exponents are different from those of the clean system described by the standard O(3) universality class in 2+1 dimensions.

  3. Metal-Insulator Transition in the Organic Metal \\(TTM-TTP\\)I3 with a One-Dimensional Half-Filled Band

    Science.gov (United States)

    Mori, T.; Kawamoto, T.; Yamaura, J.; Enoki, T.; Misaki, Y.; Yamabe, T.; Mori, H.; Tanaka, S.

    1997-09-01

    The title 1:1 composition organic conductor, with a highly one-dimensional half-filled energy band, exhibits metallic conductivity down to TMI~160 K, but the spin susceptibility follows the one-dimensional Heisenberg model from room temperature to 2 K, without any anomaly at TMI. The insulating state is regarded as a Mott insulator. The small U, related to the extended molecular structure, gives rise to the small charge gap and the high-temperature metallic conduction.

  4. Processing of n{sup +}/p{sup −}/p{sup +} strip detectors with atomic layer deposition (ALD) grown Al{sub 2}O{sub 3} field insulator on magnetic Czochralski silicon (MCz-si) substrates

    Energy Technology Data Exchange (ETDEWEB)

    Härkönen, J., E-mail: jaakko.harkonen@helsinki.fi [Helsinki Institute of Physics (Finland); Tuovinen, E. [Helsinki Institute of Physics (Finland); VTT Technical Research Centre of Finland, Microsystems and Nanoelectronics (Finland); Luukka, P.; Gädda, A.; Mäenpää, T.; Tuominen, E.; Arsenovich, T. [Helsinki Institute of Physics (Finland); Junkes, A. [Institute for Experimental Physics, University of Hamburg (Germany); Wu, X. [VTT Technical Research Centre of Finland, Microsystems and Nanoelectronics (Finland); Picosun Oy, Tietotie 3, FI-02150 Espoo Finland (Finland); Li, Z. [School of Materials Science and Engineering, Xiangtan University, Xiangtan, Hunan 411105 (China)

    2016-08-21

    Detectors manufactured on p-type silicon material are known to have significant advantages in very harsh radiation environment over n-type detectors, traditionally used in High Energy Physics experiments for particle tracking. In p-type (n{sup +} segmentation on p substrate) position-sensitive strip detectors, however, the fixed oxide charge in the silicon dioxide is positive and, thus, causes electron accumulation at the Si/SiO{sub 2} interface. As a result, unless appropriate interstrip isolation is applied, the n-type strips are short-circuited. Widely adopted methods to terminate surface electron accumulation are segmented p-stop or p-spray field implantations. A different approach to overcome the near-surface electron accumulation at the interface of silicon dioxide and p-type silicon is to deposit a thin film field insulator with negative oxide charge. We have processed silicon strip detectors on p-type Magnetic Czochralski silicon (MCz-Si) substrates with aluminum oxide (Al{sub 2}O{sub 3}) thin film insulator, grown with Atomic Layer Deposition (ALD) method. The electrical characterization by current–voltage and capacitance−voltage measurement shows reliable performance of the aluminum oxide. The final proof of concept was obtained at the test beam with 200 GeV/c muons. For the non-irradiated detector the charge collection efficiency (CCE) was nearly 100% with a signal-to-noise ratio (S/N) of about 40, whereas for the 2×10{sup 15} n{sub eq}/cm{sup 2} proton irradiated detector the CCE was 35%, when the sensor was biased at 500 V. These results are comparable with the results from p-type detectors with the p-spray and p-stop interstrip isolation techniques. In addition, interestingly, when the aluminum oxide was irradiated with Co-60 gamma-rays, an accumulation of negative fixed oxide charge in the oxide was observed.

  5. Mott transition in Ga-doped Mg{sub x}Zn{sub 1-x}O: A direct observation

    Energy Technology Data Exchange (ETDEWEB)

    Wei Wei; Nori, Sudhakar [Department of Materials Science and Engineering, North Carolina State University, Raleigh, NC (United States); Jin Chunming [Department of Biomedical Engineering, University of North Carolina and North Carolina State University, Campus Box 7115, Raleigh, NC 27695-7115 (United States); Narayan, Jagdish [Department of Materials Science and Engineering, North Carolina State University, Raleigh, NC (United States); Narayan, Roger J., E-mail: roger_narayan@unc.edu [Department of Biomedical Engineering, University of North Carolina and North Carolina State University, Campus Box 7115, Raleigh, NC 27695-7115 (United States); Ponarin, Dmtri; Smirnov, Alex [Department of Chemistry, North Carolina State University, Raleigh, NC (United States)

    2010-07-25

    This paper reports the direct evidence for Mott transition in Ga-doped Mg{sub x}Zn{sub 1-x}O thin films. Highly transparent Ga-doped Mg{sub x}Zn{sub 1-x}O thin films were grown on c-plane sapphire substrates using pulsed laser deposition. 0.1 at.%, 0.5 at.% and 1 at.% Ga-doped Mg{sub 0.1}Zn{sub 0.9}O films were selected for resistivity measurements in the temperature range from 250 K to 40 mK. The 0.1 at.% Ga-doped Mg{sub 0.1}Zn{sub 0.9}O thin film showed typical insulator-like behavior and the 1 at.% Ga-doped Mg{sub 0.1}Zn{sub 0.9}O thin film showed typical metal-like behavior. The 0.5 at.% Ga-doped Mg{sub 0.1}Zn{sub 0.9}O film showed increasing resistivity with decreasing temperature; resistivity was saturated with a value of 1.15 x 10{sup -2} {Omega} cm at 40 mK, which is characteristic of the metal-insulator transition region. Temperature-dependent conductivity {sigma}(T) in the low temperature range revealed that the electron-electron scattering is the dominant dephasing mechanism. The inelastic scattering time is found to vary as T{sup -3/2}.

  6. Doping driven metal-insulator transitions and charge orderings in the extended Hubbard model

    CERN Document Server

    Kapcia, K J; Capone, M; Amaricci, A

    2016-01-01

    We perform a thorough study of an extended Hubbard model featuring local and nearest-neighbor Coulomb repulsion. Using dynamical mean-field theory we investigated the zero temperature phase-diagram of this model as a function of the chemical doping. The interplay between local and non-local interaction drives a variety of phase-transitions connecting two distinct charge-ordered insulators, i.e., half-filled and quarter-filled, a charge-ordered metal and a Mott insulating phase. We characterize these transitions and the relative stability of the solutions and we show that the two interactions conspire to stabilize the quarter-filled charge ordered phase.

  7. Sizable band gap in organometallic topological insulator

    Science.gov (United States)

    Derakhshan, V.; Ketabi, S. A.

    2017-01-01

    Based on first principle calculation when Ceperley-Alder and Perdew-Burke-Ernzerh type exchange-correlation energy functional were adopted to LSDA and GGA calculation, electronic properties of organometallic honeycomb lattice as a two-dimensional topological insulator was calculated. In the presence of spin-orbit interaction bulk band gap of organometallic lattice with heavy metals such as Au, Hg, Pt and Tl atoms were investigated. Our results show that the organometallic topological insulator which is made of Mercury atom shows the wide bulk band gap of about ∼120 meV. Moreover, by fitting the conduction and valence bands to the band-structure which are produced by Density Functional Theory, spin-orbit interaction parameters were extracted. Based on calculated parameters, gapless edge states within bulk insulating gap are indeed found for finite width strip of two-dimensional organometallic topological insulators.

  8. Slowdown of the Electronic Relaxation Close to the Mott Transition

    Science.gov (United States)

    Sayyad, Sharareh; Eckstein, Martin

    2016-08-01

    We investigate the time-dependent reformation of the quasiparticle peak in a correlated metal near the Mott transition, after the system is quenched into a hot electron state and equilibrates with an environment which is colder than the Fermi-liquid crossover temperature. Close to the transition, we identify a purely electronic bottleneck time scale, which depends on the spectral weight around the Fermi energy in the bad metallic phase in a nonlinear way. This time scale can be orders of magnitude larger than the bare and renormalized electronic hopping time, so that a separation of electronic and lattice time scales may break down. The results are obtained using nonequilibrium dynamical mean-field theory and a slave-rotor representation of the Anderson impurity model.

  9. Mott-hadron resonance gas and lattice QCD thermodynamics

    CERN Document Server

    Blaschke, D; Turko, L

    2016-01-01

    We present an effective model for the generic behaviour of hadron masses and phase shifts at finite temperature which shares basic features with recent developments within the PNJL model for correlations in quark matter. On this basis we obtain the transition between a hadron resonance gas phase and the quark gluon plasma in the spirit of the generalized Beth-Uhlenbeck approach where the Mott dissociation of hadrons is encoded in the hadronic phase shifts. We find that the restriction to low-lying hadronic channels is justified by the rather low chiral transition temperature found in recent lattice QCD thermodynamics results. While we work in thermodynamic equilibrium, albeit including the contribution of unstable states, the possible contribution of massive components of the hadron resonance gas may become an aspect of strong nonequilibrium in the evolution of a hadronic fireball.

  10. Thermophysical investigations of nanotechnological insulation materials

    Science.gov (United States)

    Lakatos, Ákos

    2017-07-01

    Nowadays, to sufficiently reduce the heat loss through the wall structures with the so-called traditional insulations (polystyrene and fibrous slabs), huge thicknesses (20 - 25 cm) must be applied. In some cases there is no place for their applications e.g.: historical or heritage builfings, since the use of nano-insulation materials (aerogel, vacuum ceramic paints) takes place. They are said to be much more efficient insulations than the above mentioned ones, since they should be used in thinner forms. In this article the thermal insulating capability of solid brick wall covered with a silica-aerogel slab with 1.3 cm, moreover with a vacuum ceramic hollow contained paint with 2 mm thick are investigated. As well as a literature review about the thermal conductivity of nano-technological insulation materials will be given. Comparison of the atomic and thermal diffusion will be also presented.

  11. Polymorphism control of superconductivity and magnetism in Cs(3)C(60) close to the Mott transition.

    Science.gov (United States)

    Ganin, Alexey Y; Takabayashi, Yasuhiro; Jeglic, Peter; Arcon, Denis; Potocnik, Anton; Baker, Peter J; Ohishi, Yasuo; McDonald, Martin T; Tzirakis, Manolis D; McLennan, Alec; Darling, George R; Takata, Masaki; Rosseinsky, Matthew J; Prassides, Kosmas

    2010-07-08

    The crystal structure of a solid controls the interactions between the electronically active units and thus its electronic properties. In the high-temperature superconducting copper oxides, only one spatial arrangement of the electronically active Cu(2+) units-a two-dimensional square lattice-is available to study the competition between the cooperative electronic states of magnetic order and superconductivity. Crystals of the spherical molecular C(60)(3-) anion support both superconductivity and magnetism but can consist of fundamentally distinct three-dimensional arrangements of the anions. Superconductivity in the A(3)C(60) (A = alkali metal) fullerides has been exclusively associated with face-centred cubic (f.c.c.) packing of C(60)(3-) (refs 2, 3), but recently the most expanded (and thus having the highest superconducting transition temperature, T(c); ref. 4) composition Cs(3)C(60) has been isolated as a body-centred cubic (b.c.c.) packing, which supports both superconductivity and magnetic order. Here we isolate the f.c.c. polymorph of Cs(3)C(60) to show how the spatial arrangement of the electronically active units controls the competing superconducting and magnetic electronic ground states. Unlike all the other f.c.c. A(3)C(60) fullerides, f.c.c. Cs(3)C(60) is not a superconductor but a magnetic insulator at ambient pressure, and becomes superconducting under pressure. The magnetic ordering occurs at an order of magnitude lower temperature in the geometrically frustrated f.c.c. polymorph (Néel temperature T(N) = 2.2 K) than in the b.c.c.-based packing (T(N) = 46 K). The different lattice packings of C(60)(3-) change T(c) from 38 K in b.c.c. Cs(3)C(60) to 35 K in f.c.c. Cs(3)C(60) (the highest found in the f.c.c. A(3)C(60) family). The existence of two superconducting packings of the same electronically active unit reveals that T(c) scales universally in a structure-independent dome-like relationship with proximity to the Mott metal-insulator transition

  12. Anomalous structural disorder and distortion in metal-to-insulator-transition Ti{sub 2}O{sub 3}

    Energy Technology Data Exchange (ETDEWEB)

    Hwang, In-Hui; Jin, Zhenlan; Park, Chang-In; Han, Sang-Wook, E-mail: shan@jbnu.ac.kr [Department of Physics Education and Institute of Fusion Science, Jeonbuk(Chonbuk) National University, Jeonju 561-756 (Korea, Republic of); Jiang, Bingzhi [Department of Physics, Yanbian University, Yanji 133002 (China)

    2016-01-07

    Mott proposed that impurity bands in corundum-symmetry Ti{sub 2}O{sub 3} at high temperatures caused a collapse in the bandgap. However, the origin of the impurity bands has not yet been clarified. We examine the local structural properties of metal-to-insulator-transition Ti{sub 2}O{sub 3} using in-situ x-ray absorption fine structure (XAFS) measurements at the Ti K edge in the temperature range from 288 to 739 K. The Ti{sub 2}O{sub 3} powder is synthesized by using a chemical reaction method. X-ray diffraction (XRD) measurements from Ti{sub 2}O{sub 3} with a Rietveld refinement demonstrate a single-phased R-3c symmetry without additional distortion. Extended-XAFS combined with XRD reveals a zigzag patterned Ti position and an anomalous structural disorder in Ti-Ti pairs, accompanied by a bond length expansion of the Ti-Ti pairs along the c-axis for T > 450 K. The local structural distortion and disorder of the Ti atoms would induce impurity levels in the band gap between the Ti 3d a{sub 1g} and e{sub g}{sup π} bands, resulting in a collapse of the band gap for T > 450 K.

  13. Improvement of electron mobility in La:BaSnO3 thin films by insertion of an atomically flat insulating (Sr,BaSnO3 buffer layer

    Directory of Open Access Journals (Sweden)

    Junichi Shiogai

    2016-06-01

    Full Text Available One perovskite oxide, ASnO3 (A = Sr, Ba, is a candidate for use as a transparent conductive oxide with high electron mobility in single crystalline form. However, the electron mobility of films grown on SrTiO3 substrates does not reach the bulk value, probably because of dislocation scattering that originates from the large lattice mismatch. This study investigates the effect of insertion of bilayer BaSnO3 / (Sr,BaSnO3 for buffering this large lattice mismatch between La:BaSnO3 and SrTiO3 substrate. The insertion of 200-nm-thick BaSnO3 on (Sr,BaSnO3 bilayer buffer structures reduces the number of dislocations and improves surface smoothness of the films after annealing as proved respectively by scanning transmission electron microscopy and atomic force microscopy. A systematic investigation of BaSnO3 buffer layer thickness dependence on Hall mobility of the electron transport in La:BaSnO3 shows that the highest obtained value of mobility is 78 cm2V−1s−1 because of its fewer dislocations. High electron mobility films based on perovskite BaSnO3 can provide a good platform for transparent-conducting-oxide electronic devices and for creation of fascinating perovskite heterostructures.

  14. Excitons in topological Kondo insulators: Theory of thermodynamic and transport anomalies in SmB_{6}.

    Science.gov (United States)

    Knolle, Johannes; Cooper, Nigel R

    2017-03-03

    Kondo insulating materials lie outside the usual dichotomy of weakly versus correlated-band versus Mott-insulators. They are metallic at high temperatures but resemble band insulators at low temperatures because of the opening of an interaction-induced band gap. The first discovered Kondo insulator (KI) SmB_{6} has been predicted to form a topological KI (TKI). However, since its discovery thermodynamic and transport anomalies have been observed that have defied a theoretical explanation. Enigmatic signatures of collective modes inside the charge gap are seen in specific heat, thermal transport, and quantum oscillation experiments in strong magnetic fields. Here, we show that TKIs are susceptible to the formation of excitons and magnetoexcitons. These charge neutral composite particles can account for long-standing anomalies in SmB_{6}.

  15. Metal-insulator transition in films of doped semiconductor nanocrystals.

    Science.gov (United States)

    Chen, Ting; Reich, K V; Kramer, Nicolaas J; Fu, Han; Kortshagen, Uwe R; Shklovskii, B I

    2016-03-01

    To fully deploy the potential of semiconductor nanocrystal films as low-cost electronic materials, a better understanding of the amount of dopants required to make their conductivity metallic is needed. In bulk semiconductors, the critical concentration of electrons at the metal-insulator transition is described by the Mott criterion. Here, we theoretically derive the critical concentration nc for films of heavily doped nanocrystals devoid of ligands at their surface and in direct contact with each other. In the accompanying experiments, we investigate the conduction mechanism in films of phosphorus-doped, ligand-free silicon nanocrystals. At the largest electron concentration achieved in our samples, which is half the predicted nc, we find that the localization length of hopping electrons is close to three times the nanocrystals diameter, indicating that the film approaches the metal-insulator transition.

  16. Topological Insulator Nanowires and Nanoribbons

    KAUST Repository

    Kong, Desheng

    2010-01-13

    Recent theoretical calculations and photoemission spectroscopy measurements on the bulk Bi2Se3 material show that it is a three-dimensional topological insulator possessing conductive surface states with nondegenerate spins, attractive for dissipationless electronics and spintronics applications. Nanoscale topological insulator materials have a large surface-to-volume ratio that can manifest the conductive surface states and are promising candidates for devices. Here we report the synthesis and characterization of high quality single crystalline Bi2Se5 nanomaterials with a variety of morphologies. The synthesis of Bi 2Se5 nanowires and nanoribbons employs Au-catalyzed vapor-liquid-solid (VLS) mechanism. Nanowires, which exhibit rough surfaces, are formed by stacking nanoplatelets along the axial direction of the wires. Nanoribbons are grown along [1120] direction with a rectangular cross-section and have diverse morphologies, including quasi-one-dimensional, sheetlike, zigzag and sawtooth shapes. Scanning tunneling microscopy (STM) studies on nanoribbons show atomically smooth surfaces with ∼ 1 nm step edges, indicating single Se-Bi-Se-Bi-Se quintuple layers. STM measurements reveal a honeycomb atomic lattice, suggesting that the STM tip couples not only to the top Se atomic layer, but also to the Bi atomic layer underneath, which opens up the possibility to investigate the contribution of different atomic orbitais to the topological surface states. Transport measurements of a single nanoribbon device (four terminal resistance and Hall resistance) show great promise for nanoribbons as candidates to study topological surface states. © 2010 American Chemical Society.

  17. Atomic scale visualization of novel magnetic phase transitions in Fe-based superconductor Sr4V2O6Fe2As2

    Science.gov (United States)

    Choi, Seokhwan; Jang, Won-Jun; Ok, Jong Mok; Choi, Hyun Woo; Lee, Hyun Jung; Jung, Jin Oh; Son, Dong Hyun; Suh, Hwan Soo; Kim, Jun Sung; Semertzidis, Yannis K.; Lee, Jhinhwan

    Sr4V2O6Fe2As2 consists of superconducting FeAs layers and Mott insulating Sr2VO3 layers, and exhibits superconductivity with Tc near 30 K despite being a parent compound material. Unlike normal Fe-based superconductors, the magnetism of Sr4V2O6Fe2As2 has complexity due to the presence of two magnetic atomic layers of V and Fe; therefore, the issue of magnetism has been actively debated. In this work, we studied the orbital and magnetic phase transitions in the range of 4 K to 180 K using spin-polarized scanning tunneling microscope. We directly observed the changes of charge density waves of V atomic layer related to the nematicity at 150 K, and spin density waves of V atomic layer resulting from spin ordering of underlying Fe atomic layer below 50 K. Moreover, controlling the sample bias voltage, the hysteresis of magnetic domain is observed at 4 K. Our results show key clues to solve controversy about the magnetism of Sr4V2O6Fe2As2.

  18. Exploring the doping dependence of the Mott transition on X-ray irradiated crystals of {kappa}-(ET){sub 2}Cu[N(CN){sub 2}]Cl

    Energy Technology Data Exchange (ETDEWEB)

    Tutsch, Ulrich; Naji, Ammar; Lang, Michael [Physikalisches Institut, Goethe-Universitaet Frankfurt (M), SFB/TRR49, D-60438 Frankfurt (Germany); Sasaki, Takahiko [Institute for Materials Research, Tohoku University, 2-1-1 Katahira, Aoba-ku, Sendai, Miyagi 980-8577 (Japan)

    2010-07-01

    The quasi two-dimensional organic charge-transfer salt {kappa}-(ET){sub 2}Cu[N(CN){sub 2}]Cl has a Mott-insulating ground state at ambient pressure, which can be transformed into a superconducting ground state (T{sub c}{approx}13 K) by applying moderate pressures of {proportional_to}30 MPa (300 bar). Our objective is to study how the first-order Mott-transition line and its second-order critical end point change on doping the material away from half filling. We use X-ray irradiation in order to introduce charge carriers in this material and take the shifts in the room-temperature resistivity as a measure of the amount of doping. We will present resistivity data for the temperature range 5 K {<=}T{<=}60 K and for pressures up to 50 MPa for a {kappa}-(ET){sub 2}Cu[N(CN){sub 2}]Cl crystal at various doping levels and discuss the accompanied changes in the p-T-phase diagram.

  19. The happy marriage between electron-phonon superconductivity and Mott physics in Cs3C60: A first-principle phase diagram

    Science.gov (United States)

    Capone, Massimo; Nomura, Yusuke; Sakai, Shiro; Giovannetti, Gianluca; Arita, Ryotaro

    The phase diagram of doped fullerides like Cs3C60 as a function of the spacing between fullerene molecules is characterized by a first-order transition between a Mott insulator and an s-wave superconductor with a dome-shaped behavior of the critical temperature. By means of an ab-initio modeling of the bandstructure, the electron-phonon interaction and the interaction parameter and a Dynamical Mean-Field Theory solution, we reproduce the phase diagram and demonstrate that phonon superconductivity benefits from strong correlations confirming earlier model predictions. The role of correlations is manifest also in infrared measurements carried out by L. Baldassarre. The superconducting phase shares many similarities with ''exotic'' superconductors with electronic pairing, suggesting that the anomalies in the ''normal'' state, rather than the pairing glue, can be the real common element unifying a wide family of strongly correlated superconductors including cuprates and iron superconductors

  20. Mottness collapse and T-linear resistivity in cuprate superconductors.

    Science.gov (United States)

    Phillips, Philip

    2011-04-28

    Central to the normal state of cuprate high-temperature superconductors is the collapse of the pseudo-gap, briefly reviewed here, at a critical point and the subsequent onset of the strange metal characterized by a resistivity that scales linearly with temperature. A possible clue to the resolution of this problem is the inter-relation between two facts: (i) a robust theory of T-linear resistivity resulting from quantum criticality requires an additional length scale outside the standard one-parameter scaling scenario and (ii) breaking the Landau correspondence between the Fermi gas and an interacting system with short-range repulsions requires non-fermionic degrees. We show that a low-energy theory of the Hubbard model that correctly incorporates dynamical spectral weight transfer has the extra degrees of freedom needed to describe this physics. The degrees of freedom that mix into the lower band as a result of dynamical spectral weight transfer are shown to either decouple beyond a critical doping, thereby signalling Mottness collapse, or unbind above a critical temperature, yielding strange metal behaviour characterized by T-linear resistivity.

  1. Hund's coupling and the metal-insulator transition in the two-band Hubbard model

    Science.gov (United States)

    Pruschke, Th.; Bulla, R.

    2005-03-01

    The Mott-Hubbard metal-insulator transition is investigated in a two-band Hubbard model within dynamical mean-field theory. To this end, we use a suitable extension of Wilson’s numerical renormalization group for the solution of the effective two-band single-impurity Anderson model. This method is non-perturbative and, in particular, allows to take into account the full exchange part of the Hund’s rule coupling between the two orbitals. We discuss in detail the influence of the various Coulomb interactions on thermodynamic and dynamic properties, for both the impurity and the lattice model. The exchange part of the Hund’s rule coupling turns out to play an important role for the physics of the two-band Hubbard model and for the nature of the Mott-transition.

  2. Orbital selective Mott transition in 3D and 5F materials

    Science.gov (United States)

    Toropova, Antonina

    We study two types of strongly correlated electron systems in the example of the transition oxide CrO2 and actinide series. We found that the physics of both types of materials can be interpreted and discussed using concept of orbital selective Mott transition (OSMT). The theory of OSMT is discussed in framework of the multiorbital Hubbard model applied to the description of t2g orbitals of Cr atoms in chromium dioxide as well as in the framework of a more generalized model for 5f materials containing both Hubbard-like and Anderson-like contributions. The electronic structure, transport, and magnetic properties of selected compounds are investigated by means of Ab Initio calculations. The many body techniques such as LDA+U and dynamical mean field theory (DMFT) have been used in addition to density functional based local density approximation (LDA) method. The half-metallic ferromagnet CrO2 has been shown to demonstrate effectively weakly correlated behavior in ordered state due to big exchange splitting within t2g orbitals. The detailed DMFT study with Quantum Monte Carlo (QMC) impurity solver revealed that in the paramagnetic state this compound was on the edge of a quantum transition. In the case of the actinide series we first demonstrated the choice of basis which optimum for DMFT based calculations. By means of detailed one-electron band structure analysis we showed that hybridization term of 5f-orbitals with conduction electrons must be included in the actinide Hamiltonian due to permanent presence of uncorrelated states at Fermi level. We conclude study of 5f-materials presenting tight-binding parametrization and exploring magnetic characteristics.

  3. Insulated Fiber Brush.

    Science.gov (United States)

    An insulated-strand fiber brush is provided for a DC motor /generator. The brush is comprised of a plurality of fiber segments which are insulated from one another near the contact surface of a rotor bar. In one embodiment, insulating spacers are fixed to a brush assembly and wear with the fibers, and in another embodiment insulation is provided by a separate shell. (Author)

  4. Electronics: Mott Transistor: Fundamental Studies and Device Operation Mechanisms

    Science.gov (United States)

    2016-03-21

    hopping transport . It is well known that localized states exist in the forbidden gap of doped semiconductors /disordered insulators. For a semiconductor , σ... semiconductors and their response to electric fields. This is relevant to their eventual use as advanced semiconductors in microwave devices or high speed...transistors where collective effects are exploited to design switches.The report presents our progress in studying electron transport mechanisms in

  5. Extended Bose-Hubbard model and atomic quantum simulation of U(1) gauge-Higgs model in (1 + 1) dimensions

    CERN Document Server

    Kuno, Yoshihito; Sakane, Shinya; Kasamatsu, Kenichi; Ichinose, Ikuo; Matsui, Tetsuo

    2016-01-01

    In this paper, we study atomic quantum simulations of $(1+1)$-dimensional($(1+1)$D) U(1) gauge-Higgs models (GHMs) defined on a lattice. We explain how U(1) lattice GHMs appear from an extended Bose-Hubbard model (EBHM) describing ultra-cold atoms with a nearest neighbor repulsion in a 1D optical lattice. We first study a phase diagram of the 1D EBHM at low fillings by means of a quantum Monte-Carlo(MC) simulation. Next, we study the EBHM at large fillings and also GHMs by the MC simulations in the path-integral formalism and show that there are four phases, i.e., the Higgs phase(superfluid), the confinement phase (Mott insulator), and phases corresponding to the density wave and the supersolid. With the obtained phase diagrams, we investigate the relationship between the two models. Finally, we study real-time dynamic of an electric flux in the GHMs by the Gross-Pitaevskii equations and the truncated Wigner approximation.

  6. Insulating phase in Sr2IrO4: An investigation using critical analysis and magnetocaloric effect

    Science.gov (United States)

    Bhatti, Imtiaz Noor; Pramanik, A. K.

    2017-01-01

    The nature of insulating phase in 5d based Sr2IrO4 is quite debated as the theoretical as well as experimental investigations have put forward evidences in favor of both magnetically driven Slater-type and interaction driven Mott-type insulator. To understand this insulating behavior, we have investigated the nature of magnetic state in Sr2IrO4 through studying critical exponents, low temperature thermal demagnetization and magnetocaloric effect. The estimated critical exponents do not exactly match with any universality class, however, the values obey the scaling behavior. The exponent values suggest that spin interaction in present material is close to mean-field model. The analysis of low temperature thermal demagnetization data, however, shows dual presence of localized- and itinerant-type of magnetic interaction. Moreover, field dependent change in magnetic entropy indicates magnetic interaction is close to mean-field type. While this material shows an insulating behavior across the magnetic transition, yet a distinct change in slope in resistivity is observed around Tc. We infer that though the insulating phase in Sr2IrO4 is more close to be Slater-type but the simultaneous presence of both Slater- and Mott-type is the likely scenario for this material.

  7. Magnetic fluctuations driven insulator-to-metal transition in Ca(Ir1-xRux)O3

    Science.gov (United States)

    Gunasekera, J.; Harriger, L.; Dahal, A.; Heitmann, T.; Vignale, G.; Singh, D. K.

    2015-12-01

    Magnetic fluctuations in transition metal oxides are a subject of intensive research because of the key role they are expected to play in the transition from the Mott insulator to the unconventional metallic phase of these materials, and also as drivers of superconductivity. Despite much effort, a clear link between magnetic fluctuations and the insulator-to-metal transition has not yet been established. Here we report the discovery of a compelling link between magnetic fluctuations and the insulator-to-metal transition in Ca(Ir1-xRux)O3 perovskites as a function of the substitution coefficient x. We show that when the material turns from insulator to metal, at a critical value of x ~ 0.3, magnetic fluctuations tend to change their character from antiferromagnetic, a Mott insulator phase, to ferromagnetic, an itinerant electron state with Hund’s orbital coupling. These results are expected to have wide-ranging implications for our understanding of the unconventional properties of strongly correlated electrons systems.

  8. Magnetic fluctuations driven insulator-to-metal transition in Ca(Ir1−xRux)O3

    Science.gov (United States)

    Gunasekera, J.; Harriger, L.; Dahal, A.; Heitmann, T.; Vignale, G.; Singh, D. K.

    2015-01-01

    Magnetic fluctuations in transition metal oxides are a subject of intensive research because of the key role they are expected to play in the transition from the Mott insulator to the unconventional metallic phase of these materials, and also as drivers of superconductivity. Despite much effort, a clear link between magnetic fluctuations and the insulator-to-metal transition has not yet been established. Here we report the discovery of a compelling link between magnetic fluctuations and the insulator-to-metal transition in Ca(Ir1−xRux)O3 perovskites as a function of the substitution coefficient x. We show that when the material turns from insulator to metal, at a critical value of x ~ 0.3, magnetic fluctuations tend to change their character from antiferromagnetic, a Mott insulator phase, to ferromagnetic, an itinerant electron state with Hund’s orbital coupling. These results are expected to have wide-ranging implications for our understanding of the unconventional properties of strongly correlated electrons systems. PMID:26647965

  9. Percolative Metal-Insulator transition in the doped Hubbard-Holstein model with the Gutzwiller Approach

    Science.gov (United States)

    Moradi Kurdestany, Jamshid; Satpathy, Sashi

    Motivated by the recent progress in understanding of Mott insulators away from half filling, observed in many perovskite oxides, we study the metal-insulator transition in the Hubbard-Holstein model, which contains both the Coulomb and the electron-lattice (Jahn Teller) interactions by using the Gutzwiller variational method. We find that strong electron-lattice Interaction leads to phase separation, which however can be frustrated due to the long-range Coulomb interaction, resulting in a mixed phase consisting of puddles of metallic phases embedded in an insulating matrix. When the dopant concentration exceeds a threshold value xc , the metallic part forms a percolating network leading to metallic conduction. Depending on the strength of the electron-lattice interaction, xc can be of the order of 0.05 - 0.20 or so, which is the typical value observed in the perovskites.

  10. Topological Insulator Nanowires and Nanoribbons

    Energy Technology Data Exchange (ETDEWEB)

    Kong, D.S.

    2010-06-02

    Recent theoretical calculations and photoemission spectroscopy measurements on the bulk Bi{sub 2}Se{sub 3} material show that it is a three-dimensional topological insulator possessing conductive surface states with nondegenerate spins, attractive for dissipationless electronics and spintronics applications. Nanoscale topological insulator materials have a large surface-to-volume ratio that can manifest the conductive surface states and are promising candidates for devices. Here we report the synthesis and characterization of high quality single crystalline Bi{sub 2}Se{sub 3} nanomaterials with a variety of morphologies. The synthesis of Bi{sub 2}Se{sub 3} nanowires and nanoribbons employs Au-catalyzed vapor-liquid-solid (VLS) mechanism. Nanowires, which exhibit rough surfaces, are formed by stacking nanoplatelets along the axial direction of the wires. Nanoribbons are grown along [11-20] direction with a rectangular crosssection and have diverse morphologies, including quasi-one-dimensional, sheetlike, zigzag and sawtooth shapes. Scanning tunneling microscopy (STM) studies on nanoribbons show atomically smooth surfaces with {approx}1 nm step edges, indicating single Se-Bi-Se-Bi-Se quintuple layers. STM measurements reveal a honeycomb atomic lattice, suggesting that the STM tip couples not only to the top Se atomic layer, but also to the Bi atomic layer underneath, which opens up the possibility to investigate the contribution of different atomic orbitals to the topological surface states. Transport measurements of a single nanoribbon device (four terminal resistance and Hall resistance) show great promise for nanoribbons as candidates to study topological surface states.

  11. Pair supersolid with atom-pair hopping on the state-dependent triangular lattice

    Science.gov (United States)

    Zhang, Wanzhou; Yin, Ruoxi; Wang, Yancheng

    2013-11-01

    We systematically study an extended Bose-Hubbard model with atom hopping and atom-pair hopping in the presence of a three-body constraint on the triangular lattice. By means of large-scale quantum Monte Carlo simulations, the ground-state phase diagram is studied. We find a first-order transition between the atomic superfluid phase and the pair superfluid phase when the ratio of the atomic hopping and the atom-pair hopping is adapted. The first-order transition remains unchanged under various conditions. We then focus on the interplay among the atom-pair hopping, the on-site repulsion, and the nearest-neighbor repulsion. With on-site repulsion present, we observe first-order transitions between the Mott insulators and pair superfluid driven by the pair hopping. With the nearest-neighbor repulsion turning on, three typical solid phases with 2/3, 1, and 4/3 filling emerge at small atom-pair hopping region. A stable pair supersolid phase is found at small on-site repulsion. This is due to the three-body constraint and the pair hopping, which essentially make the model a quasihardcore boson system. Thus the pair supersolid state emerges basing on the order-by-disorder mechanism, by which hardcore bosons avoid classical frustration on the triangular lattice. Without on-site repulsion, the transitions between the pair supersolid and the atom superfluid or pair superfluid are first order, except for the particle-hole symmetric point. With weak on-site repulsion and atom hopping turning on, the transition between the pair supersolid and pair superfluid phase becomes continuous. The transition between solid and pair supersolid is three-dimensional XY university, with dynamical exponent z=1 and correlation exponent ν=0.67155. The thermal melting of pair supersolid belongs to the two-dimensional Ising university. We check both energetic and mechanical balance of pair supersolid phase. Lowering the three-body constraint, no pair supersolid is found due to the absence of

  12. Strong Energy-momentum Dispersion of Phonon Dressed Carriers in the Lightly Doped Band Insulator SrTiO3

    Energy Technology Data Exchange (ETDEWEB)

    Meevasana, Warawat

    2010-05-26

    Much progress has been made recently in the study of the effects of electron-phonon (el-ph) coupling in doped insulators using angle resolved photoemission (ARPES), yielding evidence for the dominant role of el-ph interactions in underdoped cuprates. As these studies have been limited to doped Mott insulators, the important question arises how this compares with doped band insulators where similar el-ph couplings should be at work. The archetypical case is the perovskite SrTiO{sub 3} (STO), well known for its giant dielectric constant of 10000 at low temperature, exceeding that of La{sub 2}CuO{sub 4} by a factor of 500. Based on this fact, it has been suggested that doped STO should be the archetypical bipolaron superconductor. Here we report an ARPES study from high-quality surfaces of lightly doped SrTiO{sub 3}. Comparing to lightly doped Mott insulators, we find the signatures of only moderate electron-phonon coupling: a dispersion anomaly associated with the low frequency optical phonon with a {lambda}{prime} {approx} 0.3 and an overall bandwidth renormalization suggesting an overall {lambda}{prime} {approx} 0.7 coming from the higher frequency phonons. Further, we find no clear signatures of the large pseudogap or small polaron phenomena. These findings demonstrate that a large dielectric constant itself is not a good indicator of el-ph coupling and highlight the unusually strong effects of the el-ph coupling in doped Mott insulators.

  13. Disappearance of nodal gap across the insulator-superconductor transition in a copper-oxide superconductor.

    Science.gov (United States)

    Peng, Yingying; Meng, Jianqiao; Mou, Daixiang; He, Junfeng; Zhao, Lin; Wu, Yue; Liu, Guodong; Dong, Xiaoli; He, Shaolong; Zhang, Jun; Wang, Xiaoyang; Peng, Qinjun; Wang, Zhimin; Zhang, Shenjin; Yang, Feng; Chen, Chuangtian; Xu, Zuyan; Lee, T K; Zhou, X J

    2013-01-01

    The parent compound of the copper-oxide high-temperature superconductors is a Mott insulator. Superconductivity is realized by doping an appropriate amount of charge carriers. How a Mott insulator transforms into a superconductor is crucial in understanding the unusual physical properties of high-temperature superconductors and the superconductivity mechanism. Here we report high-resolution angle-resolved photoemission measurement on heavily underdoped Bi₂Sr₂-xLaxCuO(₆+δ) system. The electronic structure of the lightly doped samples exhibit a number of characteristics: existence of an energy gap along the nodal direction, d-wave-like anisotropic energy gap along the underlying Fermi surface, and coexistence of a coherence peak and a broad hump in the photoemission spectra. Our results reveal a clear insulator-superconductor transition at a critical doping level of ~0.10 where the nodal energy gap approaches zero, the three-dimensional antiferromagnetic order disappears, and superconductivity starts to emerge. These observations clearly signal a close connection between the nodal gap, antiferromagnetism and superconductivity.

  14. Computational design of axion insulators based on 5d spinel compounds.

    Science.gov (United States)

    Wan, Xiangang; Vishwanath, Ashvin; Savrasov, Sergey Y

    2012-04-06

    Based on density functional calculation using the local density approximation+U method, we predict that osmium compounds such as CaOs(2)O(4) and SrOs(2)O(4) can be stabilized in the geometrically frustrated spinel crystal structure. They show ferromagnetic order in a reasonable range of the on-site Coulomb correlation U and exotic electronic properties, in particular, a large magnetoelectric coupling characteristic of axion electrodynamics. Depending on U, other electronic phases including a 3D Weyl semimetal and Mott insulator are also shown to occur.

  15. Strongly Correlated Topological Insulators

    Science.gov (United States)

    2016-02-03

    Research Triangle Park , NC 27709-2211 Condensed Matter, Topological Phases of Matter REPORT DOCUMENTATION PAGE 11. SPONSOR/MONITOR’S REPORT NUMBER(S...Strongly Correlated Topological Insulators In the past year, the grant was used for work in the field of topological phases, with emphasis on finding...surface of topological insulators. In the past 3 years, we have started a new direction, that of fractional topological insulators. These are materials

  16. On metal-insulator transition in cubic fullerides

    Science.gov (United States)

    Iwahara, Naoya; Chibotaru, Liviu

    The interplay between degenerate orbital and electron correlation is a key to characterize the electronic phases in, for example, transition metal compounds and alkali-doped fullerides. Besides, the degenerate orbital couples to spin and lattice degrees of freedom ,giving rise to exotic phenomena. Here, we develop the self-consistent Gutzwiller approach for the simultaneous treatment of the Jahn-Teller effect and electron correlation, and apply the methodology to reveal the nature of the ground electronic state of fullerides. For small Coulomb repulsion on site U, the fulleride is quasi degenerate correlated metal. With increase of U, we found the quantum phase transition from the metallic phase to JT split phase. In the latter, the Mott transition (MT) mainly develops in the half-filled subband, whereas the empty and the completely filled subbands are almost uninvolved. Therefore, we can qualify the metal-insulator transition in fullerides as an orbital selective MT induced by JT effect.

  17. Quantum critical transport at a continuous metal-insulator transition

    Science.gov (United States)

    Haldar, P.; Laad, M. S.; Hassan, S. R.

    2016-08-01

    In contrast to the first-order correlation-driven Mott metal-insulator transition, continuous disorder-driven transitions are intrinsically quantum critical. Here, we investigate transport quantum criticality in the Falicov-Kimball model, a representative of the latter class in the strong disorder category. Employing cluster-dynamical mean-field theory, we find clear and anomalous quantum critical scaling behavior manifesting as perfect mirror symmetry of scaling curves on both sides of the MIT. Surprisingly, we find that the beta function β (g ) scales as log(g ) deep into the bad-metallic phase as well, providing a sound unified basis for these findings. We argue that such strong localization quantum criticality may manifest in real three-dimensional systems where disorder effects are more important than electron-electron interactions.

  18. Composite Flexible Blanket Insulation

    Science.gov (United States)

    Kourtides, Demetrius A. (Inventor); Pitts, William C. (Inventor); Goldstein, Howard E. (Inventor); Sawko, Paul M. (Inventor)

    1991-01-01

    Composite flexible multilayer insulation systems (MLI) were evaluated for thermal performance and compared with the currently used fibrous silica (baseline) insulation system. The systems described are multilayer insulations consisting of alternating layers of metal foil and scrim ceramic cloth or vacuum metallized polymeric films quilted together using ceramic thread. A silicon carbide thread for use in the quilting and the method of making it are also described. These systems are useful in providing lightweight insulation for a variety of uses, particularly on the surface of aerospace vehicles subject to very high temperatures during flight.

  19. Plasmonics in Topological Insulators

    Directory of Open Access Journals (Sweden)

    Yi-Ping Lai

    2014-04-01

    Full Text Available With strong spin-orbit coupling, topological insulators have an insulating bulk state, characterized by a band gap, and a conducting surface state, characterized by a Dirac cone. Plasmons in topological insulators show high frequency-tunability in the mid-infrared and terahertz spectral regions with transverse spin oscillations, also called “spin-plasmons”. This paper presents a discussion and review of the developments in this field from the fundamental theory of plasmons in bulk, thin-film, and surface-magnetized topological insulators to the techniques of plasmon excitation and future applications.

  20. Flat-Band Potential of a Semiconductor: Using the Mott-Schottky Equation

    Science.gov (United States)

    Gelderman, K.; L. Lee; Donne, S. W.

    2007-01-01

    An experiment is suitable for fourth-year undergraduate and graduate students in which the nature of the semiconductor materials through determination of flat-band potential using the Mott-Schottky equation is explored. The experiment confirms the soundness of the technique.

  1. Time-dependent Mott transition in the periodic Anderson model with nonlocal hybridization

    Science.gov (United States)

    Hofmann, Felix; Potthoff, Michael

    2016-08-01

    The time-dependent Mott transition in a periodic Anderson model with off-site, nearest-neighbor hybridization is studied within the framework of nonequilibrium self-energy functional theory. Using the two-site dynamical-impurity approximation, we compute the real-time dynamics of the optimal variational parameter and of different observables initiated by sudden quenches of the Hubbard-U and identify the critical interaction. The time-dependent transition is orbital selective, i.e., in the final state, reached in the long-time limit after the quench to the critical interaction, the Mott gap opens in the spectral function of the localized orbitals only. We discuss the dependence of the critical interaction and of the final-state effective temperature on the hybridization strength and point out the various similarities between the nonequilibrium and the equilibrium Mott transition. It is shown that these can also be smoothly connected to each other by increasing the duration of a U-ramp from a sudden quench to a quasi-static process. The physics found for the model with off-site hybridization is compared with the dynamical Mott transition in the single-orbital Hubbard model and with the dynamical crossover found for the real-time dynamics of the conventional Anderson lattice with on-site hybridization.

  2. Concept of multichannel spin-resolving electron analyzer based on Mott scattering

    CERN Document Server

    Strocov, Vladimir N; Dil, J Hugo

    2014-01-01

    Concept of a multichannel electron spin detector based on optical imaging principles and Mott scattering (iMott) is presented. A multichannel electron image produced by standard angle-resolving (photo) electron analyzer or microscope is re-imaged by an electrostatic lens at an accelerating voltage of 40 keV onto the Au target. Quasi-elastic electrons bearing spin asymmetry of the Mott scattering are imaged by magnetic lenses onto position-sensitive electron CCDs whose differential signals yield the multichannel spin asymmetry image. Fundamental advantages of this concept include acceptance of inherently divergent electron sources from the electron analyzer or microscope focal plane as well as small aberrations achieved by virtue of high accelerating voltages, as demonstrated by extensive ray-tracing analysis. The efficiency gain compared to the single-channel Mott detector can be a factor of 1.5e4 and above, opening new prospects of spin-resolved spectroscopies in application not only to standard bulk and sur...

  3. Detecting topological phases in cold atoms.

    Science.gov (United States)

    Liu, Xiong-Jun; Law, K T; Ng, T K; Lee, Patrick A

    2013-09-20

    Chern insulators are band insulators which exhibit a gap in the bulk and gapless excitations in the edge. Detection of Chern insulators is a serious challenge in cold atoms since the Hall transport measurements are technically unrealistic for neutral atoms. By establishing a natural correspondence between the time-reversal invariant topological insulator and the quantum anomalous Hall system, we show for a class of Chern insulators that the topology can be determined by only measuring Bloch eigenstates at highly symmetric points of the Brillouin zone. Furthermore, we introduce two experimental schemes, including the spin-resolved Bloch oscillation, to carry out the measurement. These schemes are highly feasible under realistic experimental conditions. Our results may provide a powerful tool to detect topological phases in cold atoms.

  4. Translucent insulating building envelope

    DEFF Research Database (Denmark)

    Rahbek, Jens Eg

    1997-01-01

    A new type of translucent insulating material has been tested. This material is made of Celulose-Acetat and have a honey-comb structure. The material has a high solar transmittance and is highly insulating. The material is relatively cheap to produce. Danish Title: Translucent isolerende klimaskærm....

  5. Translucent insulating building envelope

    DEFF Research Database (Denmark)

    Rahbek, Jens Eg

    1997-01-01

    A new type of translucent insulating material has been tested. This material is made of Celulose-Acetat and have a honey-comb structure. The material has a high solar transmittance and is highly insulating. The material is relatively cheap to produce. Danish Title: Translucent isolerende klimaskærm....

  6. Specific features of insulator-metal transitions under high pressure in crystals with spin crossovers of 3 d ions in tetrahedral environment

    Science.gov (United States)

    Lobach, K. A.; Ovchinnikov, S. G.; Ovchinnikova, T. M.

    2015-01-01

    For Mott insulators with tetrahedral environment, the effective Hubbard parameter U eff is obtained as a function of pressure. This function is not universal. For crystals with d 5 configuration, the spin crossover suppresses electron correlations, while for d 4 configurations, the parameter U eff increases after a spin crossover. For d 2 and d 7 configurations, U eff increases with pressure in the high-spin (HS) state and is saturated after the spin crossover. Characteristic features of the insulator-metal transition are considered as pressure increases; it is shown that there may exist cascades of several transitions for various configurations.

  7. Growth window and effect of substrate symmetry in hybrid molecular beam epitaxy of a Mott insulating rare earth titanate

    Energy Technology Data Exchange (ETDEWEB)

    Moetakef, Pouya; Zhang, Jack Y.; Raghavan, Santosh; Kajdos, Adam P.; Stemmer, Susanne [Materials Department, University of California, Santa Barbara, California, 93106-5050 (United States)

    2013-07-15

    The conditions for the growth of stoichiometric GdTiO{sub 3} thin films by molecular beam epitaxy (MBE) are investigated. It is shown that relatively high growth temperatures (>750 Degree-Sign C) are required to obtain an MBE growth window in which only the stoichiometric film grows for a range of cation flux ratios. This growth window narrows with increasing film thickness. It is also shown that single-domain films are obtained by the growth on a symmetry-matched substrate. The influence of lattice mismatch strain on the electrical and magnetic characteristics of the GdTiO{sub 3} thin film is investigated.

  8. Sound Insulation between Dwellings

    DEFF Research Database (Denmark)

    Rasmussen, Birgit

    2011-01-01

    Regulatory sound insulation requirements for dwellings exist in more than 30 countries in Europe. In some countries, requirements have existed since the 1950s. Findings from comparative studies show that sound insulation descriptors and requirements represent a high degree of diversity...... and initiate – where needed – improvement of sound insulation of new and existing dwellings in Europe to the benefit of the inhabitants and the society. A European COST Action TU0901 "Integrating and Harmonizing Sound Insulation Aspects in Sustainable Urban Housing Constructions", has been established and runs...... 2009-2013. The main objectives of TU0901 are to prepare proposals for harmonized sound insulation descriptors and for a European sound classification scheme with a number of quality classes for dwellings. Findings from the studies provide input for the discussions in COST TU0901. Data collected from 24...

  9. Sound insulation between dwellings

    DEFF Research Database (Denmark)

    Rasmussen, Birgit

    2011-01-01

    Regulatory sound insulation requirements for dwellings exist in more than 30 countries in Europe. In some countries, requirements have existed since the 1950s. Findings from comparative studies show that sound insulation descriptors and requirements represent a high degree of diversity...... and initiate – where needed – improvement of sound insulation of new and existing dwellings in Europe to the benefit of the inhabitants and the society. A European COST Action TU0901 "Integrating and Harmonizing Sound Insulation Aspects in Sustainable Urban Housing Constructions", has been established and runs...... 2009-2013. The main objectives of TU0901 are to prepare proposals for harmonized sound insulation descriptors and for a European sound classification scheme with a number of quality classes for dwellings. Findings from the studies provide input for the discussions in COST TU0901. Data collected from 24...

  10. Electronic evidence of an insulator-superconductor crossover in single-layer FeSe/SrTiO3 films.

    Science.gov (United States)

    He, Junfeng; Liu, Xu; Zhang, Wenhao; Zhao, Lin; Liu, Defa; He, Shaolong; Mou, Daixiang; Li, Fangsen; Tang, Chenjia; Li, Zhi; Wang, Lili; Peng, Yingying; Liu, Yan; Chen, Chaoyu; Yu, Li; Liu, Guodong; Dong, Xiaoli; Zhang, Jun; Chen, Chuangtian; Xu, Zuyan; Chen, Xi; Ma, Xucun; Xue, Qikun; Zhou, X J

    2014-12-30

    In high-temperature cuprate superconductors, it is now generally agreed that superconductivity is realized by doping an antiferromagnetic Mott (charge transfer) insulator. The doping-induced insulator-to-superconductor transition has been widely observed in cuprates, which provides important information for understanding the superconductivity mechanism. In the iron-based superconductors, however, the parent compound is mostly antiferromagnetic bad metal, raising a debate on whether an appropriate starting point should go with an itinerant picture or a localized picture. No evidence of doping-induced insulator-superconductor transition (or crossover) has been reported in the iron-based compounds so far. Here, we report an electronic evidence of an insulator-superconductor crossover observed in the single-layer FeSe film grown on a SrTiO3 substrate. By taking angle-resolved photoemission measurements on the electronic structure and energy gap, we have identified a clear evolution of an insulator to a superconductor with increasing carrier concentration. In particular, the insulator-superconductor crossover in FeSe/SrTiO3 film exhibits similar behaviors to that observed in the cuprate superconductors. Our results suggest that the observed insulator-superconductor crossover may be associated with the two-dimensionality that enhances electron localization or correlation. The reduced dimensionality and the interfacial effect provide a new pathway in searching for new phenomena and novel superconductors with a high transition temperature.

  11. A Semiconductor Under Insulator Technology in Indium Phosphide

    CERN Document Server

    Mnaymneh, Khaled; Frédérick, Simon; Lapointe, Jean; Poole, Philip J; Williams, Robin L

    2012-01-01

    This Letter introduces a Semiconductor-Under-Insulator (SUI) technology in InP for designing strip waveguides that interface InP photonic crystal membrane structures. Strip waveguides in InP-SUI are supported under an atomic layer deposited insulator layer in contrast to strip waveguides in silicon supported on insulator. We show a substantial improvement in optical transmission when using InP-SUI strip waveguides interfaced with localized photonic crystal membrane structures when compared with extended photonic crystal waveguide membranes. Furthermore, SUI makes available various fiber-coupling techniques used in SOI, such as sub-micron coupling, for planar membrane III-V systems.

  12. Non-local Coulomb correlations in metals close to a charge order insulator transition

    Science.gov (United States)

    Merino, Jaime

    2008-03-01

    Recent extensions of dynamical mean-field theory (DMFT) to clusters either in its real space (CDMFT) or momentum space versions (DCA) have become important tools for the description of electronic properties of low dimensional strongly correlated systems. In contrast to single site DMFT, short range correlation effects on electronic properties of systems close to the Mott transition can be analyzed. We have investigated the charge ordering transition induced by the nearest-neighbor Coulomb repulsion V in the 1/4-filled extended Hubbard model using CDMFT. We find a transition to a strongly renormalized charge ordered Fermi liquid at VCO and a metal-to- insulator transition at VMI>VCO. Short range antiferromagnetism occurs concomitantly with the CO transition. Approaching the charge ordered insulator, V

  13. Microsphere Insulation Panels

    Science.gov (United States)

    Mohling, R.; Allen, M.; Baumgartner, R.

    2006-01-01

    Microsphere insulation panels (MIPs) have been developed as lightweight, longlasting replacements for the foam and vacuum-jacketed systems heretofore used for thermally insulating cryogenic vessels and transfer ducts. The microsphere core material of a typical MIP consists of hollow glass bubbles, which have a combination of advantageous mechanical, chemical, and thermal-insulation properties heretofore available only separately in different materials. In particular, a core filling of glass microspheres has high crush strength and low density, is noncombustible, and performs well in soft vacuum.

  14. Insulation fact sheet

    Energy Technology Data Exchange (ETDEWEB)

    NONE

    1997-08-01

    Electricity bills, oil bills, gas bills - all homeowners pay for one or more of these utilities, and wish they paid less. Often many of us do not really know how to control or reduce our utility bills. We resign ourselves to high bills because we think that is the price we have to pay for a comfortable home. We encourage our children to turn off the lights and appliances, but may not recognize the benefits of insulating the attic. This publication provides facts relative to home insulation. It discusses where to insulate, what products to use, the decision making process, installation options, and sources of additional information.

  15. Metastable Phases and Dynamics of Low-Dimensional Strongly-Correlated Atomic Quantum Gases

    Science.gov (United States)

    Pielawa, Susanne

    In this thesis we theoretically study low-dimensional, strongly correlated systems of cold atoms, which are not in an equilibrium situation. This is motivated by recent experimental progress, which has made it possible to study quantum many-body physics in a controllable and clean setting; and parameters can be changed during the experiment. In Chapter 2 and 3 we study phases and quantum phase transitions of 'tilted' Mott insulator of bosons. We analyze a variety of lattices and tilt directions in two dimensions: square, decorated square, triangular, and kagome. We show that there are rich possibilities for correlated phases with non-trivial entanglement of pseudospin degrees of freedom encoded in the boson density. For certain configurations three-body interactions are necessary to ensure that the energy of the effective resonant subspace is bounded from below. We find quantum phases with Ising density wave order, with superfluidity transverse to the tilt direction, a quantum liquid state with no broken symmetry. We also find cases for which the resonant subspace is described by effective quantum dimer models. In Chapter 4 we study spin 1/2 chains with a Heisenberg interaction which are coupled in a way that would arise if they are taken off graphene at a zig-zag edge. In Chapter 5 we theoretically analyze interference patterns of parametrically driven one-dimensional cold atomic systems. The parametric driving leads to spatial oscillations in the interference patter, which can be analyzed to obtain the sound velocity of the 1d system, and to probe spin-charge separation.

  16. Emergence of classical trajectories in quantum systems: the cloud chamber problem in the analysis of Mott (1929)

    CERN Document Server

    Figari, Rodolfo

    2012-01-01

    We analyze the paper "The wave mechanics of $\\alpha$-ray tracks" (Mott, 1929), published in 1929 by N.F. Mott. In particular, we discuss the theoretical context in which the paper appeared and give a detailed account of the approach used by the author and the main result attained. Moreover, we comment on the relevance of the work not only as far as foundations of Quantum Mechanics are concerned but also as the earliest pioneering contribution in decoherence theory.

  17. Universal Quantum Criticality in the Metal-Insulator Transition of Two-Dimensional Interacting Dirac Electrons

    Science.gov (United States)

    Otsuka, Yuichi; Yunoki, Seiji; Sorella, Sandro

    2016-01-01

    The metal-insulator transition has been a subject of intense research since Mott first proposed that the metallic behavior of interacting electrons could turn to an insulating one as electron correlations increase. Here, we consider electrons with massless Dirac-like dispersion in two spatial dimensions, described by the Hubbard models on two geometrically different lattices, and perform numerically exact calculations on unprecedentedly large systems that, combined with a careful finite-size scaling analysis, allow us to explore the quantum critical behavior in the vicinity of the interaction-driven metal-insulator transition. Thereby, we find that the transition is continuous, and we determine the quantum criticality for the corresponding universality class, which is described in the continuous limit by the Gross-Neveu model, a model extensively studied in quantum field theory. Furthermore, we discuss a fluctuation-driven scenario for the metal-insulator transition in the interacting Dirac electrons: The metal-insulator transition is triggered only by the vanishing of the quasiparticle weight, not by the Dirac Fermi velocity, which instead remains finite near the transition. This important feature cannot be captured by a simple mean-field or Gutzwiller-type approximate picture but is rather consistent with the low-energy behavior of the Gross-Neveu model.

  18. Universal Quantum Criticality in the Metal-Insulator Transition of Two-Dimensional Interacting Dirac Electrons

    Directory of Open Access Journals (Sweden)

    Yuichi Otsuka

    2016-03-01

    Full Text Available The metal-insulator transition has been a subject of intense research since Mott first proposed that the metallic behavior of interacting electrons could turn to an insulating one as electron correlations increase. Here, we consider electrons with massless Dirac-like dispersion in two spatial dimensions, described by the Hubbard models on two geometrically different lattices, and perform numerically exact calculations on unprecedentedly large systems that, combined with a careful finite-size scaling analysis, allow us to explore the quantum critical behavior in the vicinity of the interaction-driven metal-insulator transition. Thereby, we find that the transition is continuous, and we determine the quantum criticality for the corresponding universality class, which is described in the continuous limit by the Gross-Neveu model, a model extensively studied in quantum field theory. Furthermore, we discuss a fluctuation-driven scenario for the metal-insulator transition in the interacting Dirac electrons: The metal-insulator transition is triggered only by the vanishing of the quasiparticle weight, not by the Dirac Fermi velocity, which instead remains finite near the transition. This important feature cannot be captured by a simple mean-field or Gutzwiller-type approximate picture but is rather consistent with the low-energy behavior of the Gross-Neveu model.

  19. Random Walks in Anderson's Garden: A Journey from Cuprates to Cooper Pair Insulators and Beyond

    CERN Document Server

    Baskaran, G

    2016-01-01

    Anderson's Garden is a drawing presented to Philip W. Anderson on the eve of his 60th birthday celebration, in 1983. This cartoon (Fig. 1), whose author is unknown, succinctly depicts some of Anderson's pre-1983 works, as a blooming garden. As an avid reader of Anderson's papers, random walk in Anderson's garden had become a part of my routine since graduate school days. This was of immense help and prepared me for a wonderful collaboration with the gardener himself, on the resonating valence bond (RVB) theory of High Tc cuprates and quantum spin liquids, at Princeton. The result was bountiful - the first (RVB mean field) theory for i) quantum spin liquids, ii) emergent fermi surfaces in Mott insulators and iii) superconductivity in doped Mott insulators. Beyond mean field theory - i) emergent gauge fields, ii) Ginzbuerg Landau theory with RVB gauge fields, iii) prediction of superconducting dome, iv) an early identification and study of a non-fermi liquid normal state of cuprates and so on. Here I narrate th...

  20. Understanding Mott-Schottky Measurements under Illumination in Organic Bulk Heterojunction Solar Cells

    Science.gov (United States)

    Zonno, Irene; Martinez-Otero, Alberto; Hebig, Jan-Christoph; Kirchartz, Thomas

    2017-03-01

    The Mott-Schottky analysis in the dark is a frequently used method to determine the doping concentration of semiconductors from capacitance-voltage measurements, even for such complex systems as polymer:fullerene blends used for organic solar cells. While the analysis of capacitance-voltage measurements in the dark is relatively well established, the analysis of data taken under illumination is currently not fully understood. Here, we present experiments and simulations to show which physical mechanisms affect the Mott-Schottky analysis under illumination. We show that the mobility of the blend has a major influence on the shape of the capacitance-voltage curve and can be obtained from data taken under reverse bias. In addition, we show that the apparent shift of the built-in voltage observed previously can be explained by a shift of the onset of space-charge-limited collection with illumination intensity.

  1. Topological insulators: Engineered heterostructures

    Science.gov (United States)

    Hesjedal, Thorsten; Chen, Yulin

    2017-01-01

    The combination of topological properties and magnetic order can lead to new quantum states and exotic physical phenomena. In particular, the coupling between topological insulators and antiferromagnets enables magnetic and electronic structural engineering.

  2. Gas insulated substations

    CERN Document Server

    2014-01-01

    This book provides an overview on the particular development steps of gas insulated high-voltage switchgear, and is based on the information given with the editor's tutorial. The theory is kept low only as much as it is needed to understand gas insulated technology, with the main focus of the book being on delivering practical application knowledge. It discusses some introductory and advanced aspects in the meaning of applications. The start of the book presents the theory of Gas Insulated Technology, and outlines reliability, design, safety, grounding and bonding, and factors for choosing GIS. The third chapter presents the technology, covering the following in detail: manufacturing, specification, instrument transformers, Gas Insulated Bus, and the assembly process. Next, the book goes into control and monitoring, which covers local control cabinet, bay controller, control schemes, and digital communication. Testing is explained in the middle of the book before installation and energization. Importantly, ...

  3. Repairing ceramic insulating tiles

    Science.gov (United States)

    Dunn, B. R.; Laymance, E. L.

    1980-01-01

    Fused-silica tiles containing large voids or gauges are repaired without adhesives by plug insertion method. Tiles are useful in conduits for high-temperature gases, in furnaces, and in other applications involving heat insulation.

  4. Competing ground states of strongly correlated bosons in the Harper-Hofstadter-Mott model

    Science.gov (United States)

    Natu, Stefan S.; Mueller, Erich J.; Das Sarma, S.

    2016-06-01

    Using an efficient cluster approach, we study the physics of two-dimensional lattice bosons in a strong magnetic field in the regime where the tunneling is much weaker than the on-site interaction strength. We study both the dilute, hard-core bosons at filling factors much smaller than unity occupation per site and the physics in the vicinity of the superfluid-Mott lobes as the density is tuned away from unity. For hard-core bosons, we carry out extensive numerics for a fixed flux per plaquette ϕ =1 /5 and ϕ =1 /3 . At large flux, the lowest-energy state is a strongly correlated superfluid, analogous to He-4, in which the order parameter is dramatically suppressed, but nonzero. At filling factors ν =1 /2 ,1 , we find competing incompressible states which are metastable. These appear to be commensurate density wave states. For small flux, the situation is reversed and the ground state at ν =1 /2 is an incompressible density wave solid. Here, we find a metastable lattice supersolid phase, where superfluidity and density wave order coexist. We then perform careful numerical studies of the physics near the vicinity of the Mott lobes for ϕ =1 /2 and ϕ =1 /4 . At ϕ =1 /2 , the superfluid ground state has commensurate density wave order. At ϕ =1 /4 , incompressible phases appear outside the Mott lobes at densities n =1.125 and n =1.25 , corresponding to filling fractions ν =1 /2 and 1, respectively. These phases, which are absent in single-site mean-field theory, are metastable and have slightly higher energy than the superfluid, but the energy difference between them shrinks rapidly with increasing cluster size, suggestive of an incompressible ground state. We thus explore the interplay between Mott physics, magnetic Landau levels, and superfluidity, finding a rich phase diagram of competing compressible and incompressible states.

  5. Conducting state of GeTe by defect-induced topological insulating order

    Science.gov (United States)

    Kim, Jinwoong; Jhi, Seung-Hoon

    2012-02-01

    Topological insulating order protected by time-reversal symmetry is robust under structural disorder. Interestingly, recent studies on phase change materials like GeSbTe showed that their topological insulating order is sensitive to atomic stacking sequences. It was also shown that their structural phase transition is correlated with topological insulating order. GeTe, a well-known phase change material, is trivial insulator in its equilibrium structure. In this study, we discuss how atomic defects such as Ge tetrahedral defect observed in amorphous GeTe can change its topological insulating order based on first-principles calculations and model Hamiltonian. We also investigated the critical density of such tetrahedral defects to induce topological insulating order in GeTe. Our study will help explore hidden orders in GeTe.

  6. Spontaneous symmetry breaking approach to La{sub 2}CuO{sub 4} properties: Hints for matching the Mott and Slater pictures

    Energy Technology Data Exchange (ETDEWEB)

    Cabo-Bizet, Alejandro [Departamento de Fisica, Centro de Aplicaciones Tecnologicas y Desarrollo, Nuclear (CEADEN), Calle 30, esq. a 5ta, La Habana (Cuba); Cabo Montes de Oca, Alejandro [Grupo de Fisica Teorica, Instituto de Cibernetica Matematematica y Fisica (ICIMAF), Calle E, No. 309, entre 13 y 15, Vedado, La Habana (Cuba)], E-mail: cabo@icmf.inf.cu

    2009-05-04

    Special solutions of the Hartree-Fock (HF) problem for Coulomb interacting electrons described by a simple model of the Cu-O planes in La{sub 2}CuO{sub 4} are presented. One of the mean field states obtained, is able to predict some of the most interesting properties of this material, such as its insulator character and the antiferromagnetic order. The natural appearance of pseudogaps in some states of this material is also indicated by another of the HF states obtained. These surprising results follow after eliminating spin and crystal symmetry restrictions usually imposed on the single particle HF orbitals, by employing the rotational invariant formulation of the HF scheme originally introduced by Dirac. Therefore, it is exemplified here, how up to know considered strong correlation effects, can be described by improving the HF solution of the considered system. In other words, it has been argued, that defining correlation effects as the ones shown by the system and not predicted by the HF best (lowest energy) solution, allows to explain important, up to know considered as strong correlation properties, as simple mean field ones. The discussion also helps to clarify the role of the antiferromagnetism and pseudogaps in the physical properties of the HTSC materials and indicates a promising way to start conciliating the Mott and Slater pictures in the physics of the transition metal oxides and other strongly correlated electron systems.

  7. Exploring the doping dependence of the Mott transition on X-ray irradiated crystals of {kappa}-(ET){sub 2}Cu[N(CN){sub 2}]Cl

    Energy Technology Data Exchange (ETDEWEB)

    Koehler, Sebastian; Tutsch, Ulrich; Naji, Ammar; Lang, Michael [Physikalisches Institut, Goethe-Universitaet Frankfurt (Germany); Sasaki, Takahiko [Institute for Materials Research, Tohoku University, Aoba-ku, Sendai, Miyagi (Japan)

    2011-07-01

    The quasi two-dimensional organic charge-transfer salt {kappa}-(ET){sub 2}Cu[N(CN){sub 2}]Cl exhibits a rich pressure vs. temperature phase diagram, including Mott-insulating and metallic phases separated by a first order transition line. By applying moderate pressures of {proportional_to}30 MPa (300 bar), the ratio of the kinetic energy to the onsite Coulomb repulsion t/U can be changed sufficiently to cross this phase transition line. Our objective is to study the effect of carrier doping and the accompanying changes of the first-order transition line and its second-order critical endpoint. We used X-ray irradiation to introduce charge carriers into the material, doping it away from half filling. We present resistivity data for the temperature range 5 K

  8. Optical investigation of the quasi-two-dimensional Mott system Ca_2-xSr_xRuO4 (0.0<= x<= 2.0)

    Science.gov (United States)

    Lee, J. S.; Noh, T. W.; Lee, Y. S.; Oh, S.-J.; Nakatsuji, S.; Maeno, Y.

    2002-03-01

    The doping and temperature dependent optical conductivity spectra σ (ω ) in the ab-plane of the quasi-two-dimensional system Ca_2-xSr_xRuO4 (0.0= 0.2, the σ (ω ) show features of the Mott-Hubbard system. However, the insulating spectra of x=0.00 and 0.06 show an unusual two-peak structure around 1.0 and 2.0 eV. From the systematic changes with doping, it was found that both excitations have the correlation-induced Ru 4 d characters. Interestingly, for the x=0.06 sample, softening of the streching phonon mode and strong spectral weight redistribution between these two peaks were observed with decreasing temperature. These could be understood by the orbital occupancy changes with the RuO6 octahedral flattening. Possible connections to the critical behaviors of the specific heat and susceptibility at x=0.5 will be also discussed.

  9. Insulation materials. Cellulose fiber and expanded polystyrene insulations

    OpenAIRE

    Viladot Bel, Cèlia

    2017-01-01

    The main role of thermal insulation materials in a building envelope are to prevent heat loss and provide thermal comfort for a building's interior. The factor that characterizes an insulation material's effectiveness is its thermal conductivity λ (measured in W/mK). The lower a material's thermal conductivity, the more effective it is as an insulator. Traditional insulation materials include glass fibre, stone wool, expanded polystyrene, and polyurethane foam. While these materials are effic...

  10. Transcription Independent Insulation at TFIIIC-Dependent Insulators

    OpenAIRE

    Valenzuela, Lourdes; Dhillon, Namrita; Kamakaka, Rohinton T.

    2009-01-01

    Chromatin insulators separate active from repressed chromatin domains. In yeast the RNA pol III transcription machinery bound to tRNA genes function with histone acetylases and chromatin remodelers to restrict the spread of heterochromatin. Our results collectively demonstrate that binding of TFIIIC is necessary for insulation but binding of TFIIIB along with TFIIIC likely improves the probability of complex formation at an insulator. Insulation by this transcription factor occurs in the abse...

  11. Reduction of Z classification of a two-dimensional weak topological insulator: Real-space dynamical mean-field theory study

    Science.gov (United States)

    Yoshida, Tsuneya; Kawakami, Norio

    2017-01-01

    One of the remarkable interaction effects on topological insulators is the reduction of topological classification in free-fermion systems. We address this issue in a bilayer honeycomb lattice model by taking into account temperature effects on the reduction. Our analysis, based on the real-space dynamical mean-field theory, elucidates the following results. (i) Even when the reduction occurs, the winding number defined by the Green's function can take a nontrivial value at zero temperature. (ii) The winding number taking the nontrivial value becomes consistent with the absence of gapless edge modes due to Mott behaviors emerging only at the edges. (iii) Temperature effects can restore the gapless edge modes, provided that the energy scale of interactions is smaller than the bulk gap. In addition, we observe the topological edge Mott behavior only in some finite-temperature region.

  12. Addendum to "Switching effect and the metal-insulator transition in electric field" by A.L. Pergament et al. [J. Phys. Chem. Solids 71 (2010) 874

    Science.gov (United States)

    Pergament, A. L.; Velichko, A. A.; Stefanovich, G. B.

    2015-02-01

    In the paper mentioned above we reported on the switching mechanism in vanadium dioxide which was shown to be based on the electronically-induced Mott insulator-to-metal transition occurring in conditions of the non-equilibrium carrier density excess in the applied electric field, and the proposed model involved the dependence of the carrier density n on electric field (the Poole-Frenkel effect), as well as the dependence of the critical electric field on n. The data on the n(T) dependence were obtained on the assumption of a temperature-independent carrier mobility μ, and the problem of n reduction at lower temperatures was not fully understood. In this Letter we revisit this problem in the light of some recent data on the μ(T) dependence for VO2. It is shown that the adjusted values of n, taking into account this μ(T), correspond to the Mott critical density within an order of magnitude.

  13. Condensation in insulated homes

    Energy Technology Data Exchange (ETDEWEB)

    Wiley, R A

    1978-05-28

    A research proposal on condensation in insulated homes is presented. Information is provided on: justification for condensation control; previous work and present outlook (good vapor barrier, condensation and retrofit insulation, vapor barrier decreases condensation, brick-veneer walls, condensation in stress-skin panels, air-conditioned buildings, retrofitting for conservation, study on mobile homes, high indoor relative humidity, report on various homes); and procedure (after funding has been secured). Measures are briefly described on opening walls, testing measures, and retrofitting procedures. An extensive bibliography and additional informative citations are included. (MCW)

  14. Super insulating aerogel glazing

    DEFF Research Database (Denmark)

    Schultz, Jørgen Munthe; Jensen, Karsten Ingerslev; Kristiansen, Finn Harken

    2004-01-01

    Monolithic silica aerogel offers the possibility of combining super insulation and high solar energy transmittance, which has been the background for a previous and a current EU project on research and development of monolithic silica aerogel as transparent insulation in windows. Generally, windows...... form the weakest part of the thermal envelope with respect to heat loss coefficient, but on the other hand also play an important role for passive solar energy utilisation. For window orientations other than south, the net energy balance will be close to or below zero. However, the properties...

  15. Spin Effects in Collisions of Electrons with Atoms and Molecules

    Institute of Scientific and Technical Information of China (English)

    2000-01-01

    Some recent experimental and theoretical work on spin-dependent electron-atom and electron-molecule collisions is reviewed. The spin is involved in such collisions by explicit spin-dependent interactions such as the spin-orbit interaction of the continuum electron (Mott scattering) but also by exchange, which, in conjunction with the Pauli principle, gives rise to observable spin exchange effects. We present results for Mn and Na atoms and experiments in which electron dichroism with chiral molecules has been studied.

  16. Quantum Monte Carlo study of strange correlator in interacting topological insulators

    Science.gov (United States)

    Wu, Han-Qing; He, Yuan-Yao; You, Yi-Zhuang; Xu, Cenke; Meng, Zi Yang; Lu, Zhong-Yi

    Distinguishing the nontrivial symmetry-protected topological (SPT) phase from the trivial insulator phase in the presence of electron-electron interaction is an urgent question to the study of topological insulators. In this work, we demonstrate that the strange correlator is a sensitive diagnosis to detect SPT states in interacting systems. Employing large-scale quantum Monte Carlo (QMC) simulations, we investigate the interaction-driven quantum phase transition in the Kane-Mele-Hubbard model. The transition from the quantum spin Hall insulator at weak interaction to an antiferromagnetic Mott insulator at strong interaction can be readily detected by the momentum space behavior of the strange correlator in single-particle, spin, and pairing sectors. The interaction e?ects on the symmetry-protected edge states in various sectors are well captured in the QMC measurements of strange correlators. Moreover, we demonstrate that the strange correlator is technically easier to implement in QMC and more robust in performance than other proposed numerical diagnoses for interacting topological states, as only static correlations are needed. The attempt in this work paves the way for using the strange correlator to study interaction-driven topological phase transitions.

  17. Critical behavior near the Mott transition in the half-filled asymmetric Hubbard model

    Energy Technology Data Exchange (ETDEWEB)

    Hoang, Anh-Tuan, E-mail: hatuan@iop.vast.ac.vn [Institute of Physics, Vietnam Academy of Science and Technology, Hanoi (Viet Nam); Le, Duc-Anh [Faculty of Physics, Hanoi National University of Education, Xuan Thuy 136, Cau Giay, Hanoi 10000 (Viet Nam)

    2016-03-15

    We study the half-filled asymmetric Hubbard model within the two-site dynamical mean field theory. At zero temperature, explicit expressions of the critical interaction U{sub c} for the Mott transition and the local self-energy are analytically derived. Critical behavior of the quasiparticle weights and the double occupancy are obtained analytically as functions of the on-site interaction U and the hopping asymmetry r. Our results are in good agreement with the ones obtained by much more sophisticated theory.

  18. Sauter-Schwinger like tunneling in tilted Bose-Hubbard lattices in the Mott phase

    CERN Document Server

    Queisser, Friedemann; Schützhold, Ralf

    2011-01-01

    We study the Mott phase of the Bose-Hubbard model on a tilted lattice. On the (Gutzwiller) mean-field level, the tilt has no effect -- but quantum fluctuations entail particle-hole pair creation via tunneling. For small potential gradients (long-wavelength limit), we derive a quantitative analogy to the Sauter-Schwinger effect, i.e., electron-positron pair creation out of the vacuum by an electric field. For large tilts, we obtain resonant tunneling related to Bloch oscillations.

  19. Insulated ECG electrodes

    Science.gov (United States)

    Portnoy, W. M.; David, R. M.

    1973-01-01

    Insulated, capacitively coupled electrode does not require electrolyte paste for attachment. Other features of electrode include wide range of nontoxic material that may be employed for dielectric because of sputtering technique used. Also, electrode size is reduced because there is no need for external compensating networks with FET operational amplifier.

  20. Transcription independent insulation at TFIIIC-dependent insulators.

    Science.gov (United States)

    Valenzuela, Lourdes; Dhillon, Namrita; Kamakaka, Rohinton T

    2009-09-01

    Chromatin insulators separate active from repressed chromatin domains. In yeast the RNA pol III transcription machinery bound to tRNA genes function with histone acetylases and chromatin remodelers to restrict the spread of heterochromatin. Our results collectively demonstrate that binding of TFIIIC is necessary for insulation but binding of TFIIIB along with TFIIIC likely improves the probability of complex formation at an insulator. Insulation by this transcription factor occurs in the absence of RNA polymerase III or polymerase II but requires specific histone acetylases and chromatin remodelers. This analysis identifies a minimal set of factors required for insulation.

  1. An expression for the Mott cross section of electrons and positrons on nuclei with Z up t0 118

    CERN Document Server

    Boschini, M J; Gervasi, M; Giani, S; Grandi, D; Ivanchenko, V; Nieminem, P; Pensotti, S; Rancoita, P G; Tacconi, M

    2013-01-01

    In the present work, an improved numerical solution for determining the ratio,$\\mathcal{R}^{\\rm Mott}$, of the unscreened Mott differential cross section (MDCS) with respect to Rutherford's formula is proposed for the scattering of electrons and positrons on nuclei with $1\\leq Z \\leq 118$. It accounts for incoming lepton energies between 1\\,keV and 900\\,MeV. For both electrons and positrons, a fitting formula and a set of fitting coefficients for the ratio $\\mathcal{R}^{\\rm Mott}$ on nuclei are also presented. The found average error of the latter practical interpolated expression is typically lower than 1% also at low energy for electrons and lower than 0.05% for positrons for all nuclei over the entire energy range.

  2. Study on the Microscopic Figures of Power Transformer Insulation Paper Under Electrical and Thermal Stresses

    Science.gov (United States)

    Liao, Rui-Jin; Tang, Chao; Yang, Li-Jun

    In this paper, Atomic Force Microscope (AFM) was used to observe the microscopic figure of aged insulation paper in order to analyze the microscopic ageing mechanism of power transformer insulation paper under electrical and thermal stresses. The results indicate that there are obvious concaves and convexes on the surface of aged insulation paper, and the paper samples are punctured because of chain scission and the flow of discharge current, which destroyed the compact cellulose chains structures and the diameter of punctures is about 0.5 nm. In addition, this paper analyzed the influence to the physical chemistry characteristics of insulation paper caused by partial discharge and paper ageing.

  3. Industrial thermal insulation: an assessment

    Energy Technology Data Exchange (ETDEWEB)

    Donnelly, R.G.; Tennery, V.J.; McElroy, D.L.; Godfrey, T.G.; Kolb, J.O.

    1976-03-01

    A large variety of thermal insulation materials is manufactured for application in various temperature ranges and environments. Additional and improved thermal insulation for steam systems is a key area with immediate energy conservation potential in several of the larger energy-consuming industries. Industrial thermal insulation technology was assessed by obtaining input from a variety of sources including insulation manufacturers, system designers, installers, users, consultants, measurement laboratories, open literature, and in-house knowledge. The assessment identified a number of factors relevant to insulation materials and usage that could contribute significantly to improved energy conservation.

  4. Universal transport near a quantum critical Mott transition in two dimensions

    Science.gov (United States)

    Witczak-Krempa, William; Ghaemi, Pouyan; Senthil, T.; Kim, Yong Baek

    2012-12-01

    We discuss the universal-transport signatures near a zero-temperature continuous Mott transition between a Fermi liquid and a quantum spin liquid in two spatial dimensions. The correlation-driven transition occurs at fixed filling and involves fractionalization of the electron: upon entering the spin liquid, a Fermi surface of neutral spinons coupled to an internal gauge field emerges. We present a controlled calculation of the value of the zero-temperature universal resistivity jump predicted to occur at the transition. More generally, the behavior of the universal scaling function that collapses the temperature- and pressure-dependent resistivity is derived, and is shown to bear a strong imprint of the emergent gauge fluctuations. We further predict a universal jump of the thermal conductivity across the Mott transition, which derives from the breaking of conformal invariance by the damped gauge field, and leads to a violation of the Wiedemann-Franz law in the quantum critical region. A connection to the quasitriangular organic salts is made, where such a transition might occur. Finally, we present some transport results for the pure rotor O(N) conformal field theory.

  5. Mott transition of excitons in ZnSe studied by phase resolved reflection

    Energy Technology Data Exchange (ETDEWEB)

    Manzke, Guenter; Henneberger, Klaus; Seemann, Matthias; Stolz, Heinrich [University Rostock (Germany). Institute of Physics

    2009-02-15

    The Mott transition of excitons in a semiconductor with increasing carrier density is in principle well understood as a consequence of screening of the Coulomb interaction between carriers. While the position of the exciton stays widely unchanged the exciton peak disappears due to band gap shrinkage. However, a more quantitative check of applied theoretical models for the screening and of the role of quantum kinetic effects in this process is still open.We demonstrate that the phase-resolved reflection in shallow-confined ZnSSe heterostructures opens the possibility of a detailed study of the Mott transition due to the appearance of pronounced interferences effects of propagating polariton modes. Our theoretical approach for the investigation of the influence of excited carriers on the dielectric susceptibility is based (i) on a quasi-particle approximation for the carrier energies and damping, and (ii) on the semiconductor Bloch equations including dynamical screening and a quantum kinetic treatment of scattering. These manybody effects lead to drastic changes of both amplitude and phase of the reflected light: Jumps of the phase are steepened, show abrupt changes from +{pi} to -{pi} and are smoothed out, and interference peaks in the amplitude decrease and disappear completely with increasing excitation. (copyright 2009 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  6. Tuning a strain-induced orbital selective Mott transition in epitaxial VO2

    Science.gov (United States)

    Mukherjee, Shantanu; Quackenbush, N. F.; Paik, H.; Schlueter, C.; Lee, T.-L.; Schlom, D. G.; Piper, L. F. J.; Lee, Wei-Cheng

    2016-06-01

    We present evidence of strain-induced modulation of electron correlation effects and increased orbital anisotropy in the rutile phase of epitaxial VO2/TiO2 films from hard x-ray photoelectron spectroscopy and soft V L-edge x-ray absorption spectroscopy, respectively. By using the U(1) slave spin formalism, we further argue that the observed anisotropic correlation effects can be understood by a model of orbital selective Mott transition at a filling that is noninteger but close to the half filling. Because the overlaps of wave functions between d orbitals are modified by the strain, orbital-dependent renormalizations of the bandwidths and the onsite energy occur. These renormalizations generally result in different occupation numbers in different orbitals. We find that if the system has a noninteger filling number near the half filling such as for VO2, certain orbitals could reach an occupation number closer to half filling under the strain, resulting in a strong reduction in the quasiparticle weight Zα of that orbital. Our work demonstrates that such an orbital selective Mott transition, defined as the case with Zα=0 in some but not all orbitals, could be accessed by epitaxial-strain engineering of correlated electron systems.

  7. Suppression of Structural Phase Transition in VO2 by Epitaxial Strain in Vicinity of Metal-insulator Transition

    Science.gov (United States)

    Yang, Mengmeng; Yang, Yuanjun; Bin Hong; Wang, Liangxin; Hu, Kai; Dong, Yongqi; Xu, Han; Huang, Haoliang; Zhao, Jiangtao; Chen, Haiping; Song, Li; Ju, Huanxin; Zhu, Junfa; Bao, Jun; Li, Xiaoguang; Gu, Yueliang; Yang, Tieying; Gao, Xingyu; Luo, Zhenlin; Gao, Chen

    2016-03-01

    Mechanism of metal-insulator transition (MIT) in strained VO2 thin films is very complicated and incompletely understood despite three scenarios with potential explanations including electronic correlation (Mott mechanism), structural transformation (Peierls theory) and collaborative Mott-Peierls transition. Herein, we have decoupled coactions of structural and electronic phase transitions across the MIT by implementing epitaxial strain on 13-nm-thick (001)-VO2 films in comparison to thicker films. The structural evolution during MIT characterized by temperature-dependent synchrotron radiation high-resolution X-ray diffraction reciprocal space mapping and Raman spectroscopy suggested that the structural phase transition in the temperature range of vicinity of the MIT is suppressed by epitaxial strain. Furthermore, temperature-dependent Ultraviolet Photoelectron Spectroscopy (UPS) revealed the changes in electron occupancy near the Fermi energy EF of V 3d orbital, implying that the electronic transition triggers the MIT in the strained films. Thus the MIT in the bi-axially strained VO2 thin films should be only driven by electronic transition without assistance of structural phase transition. Density functional theoretical calculations further confirmed that the tetragonal phase across the MIT can be both in insulating and metallic states in the strained (001)-VO2/TiO2 thin films. This work offers a better understanding of the mechanism of MIT in the strained VO2 films.

  8. Doping of Semiconducting Atomic Chains

    Science.gov (United States)

    Toshishige, Yamada; Kutler, Paul (Technical Monitor)

    1997-01-01

    Due to the rapid progress in atom manipulation technology, atomic chain electronics would not be a dream, where foreign atoms are placed on a substrate to form a chain, and its electronic properties are designed by controlling the lattice constant d. It has been shown theoretically that a Si atomic chain is metallic regardless of d and that a Mg atomic chain is semiconducting or insulating with a band gap modified with d. For electronic applications, it is essential to establish a method to dope a semiconducting chain, which is to control the Fermi energy position without altering the original band structure. If we replace some of the chain atoms with dopant atoms randomly, the electrons will see random potential along the chain and will be localized strongly in space (Anderson localization). However, if we replace periodically, although the electrons can spread over the chain, there will generally appear new bands and band gaps reflecting the new periodicity of dopant atoms. This will change the original band structure significantly. In order to overcome this dilemma, we may place a dopant atom beside the chain at every N lattice periods (N > 1). Because of the periodic arrangement of dopant atoms, we can avoid the unwanted Anderson localization. Moreover, since the dopant atoms do not constitute the chain, the overlap interaction between them is minimized, and the band structure modification can be made smallest. Some tight-binding results will be discussed to demonstrate the present idea.

  9. Super insulating aerogel glazing

    DEFF Research Database (Denmark)

    Schultz, Jørgen Munthe; Jensen, Karsten Ingerslev; Kristiansen, Finn Harken

    2004-01-01

    Monolithic silica aerogel offers the possibility of combining super insulation and high solar energy transmittance, which has been the background for a previous and a current EU project on research and development of monolithic silica aerogel as transparent insulation in windows. Generally, windows...... form the weakest part of the thermal envelope with respect to heat loss coefficient, but on the other hand also play an important role for passive solar energy utilisation. For window orientations other than south, the net energy balance will be close to or below zero. However, the properties...... of aerogel glazing will allow for a positive net energy gain even for north facing vertical windows in a Danish climate during the heating season. This means that high quality daylight can be obtained even with additional energy gain. On behalf of the partners of the two EU projects, results related...

  10. Green insulation: hemp fibers

    Energy Technology Data Exchange (ETDEWEB)

    Anon

    2011-09-15

    Indian hemp (Cannabis indica) is known for its psychotropic values and it is banned in most countries. However, industrial hemp (Cannabis sativa) is known for its tough fibers. Several manufactures in Europe including, small niche players, have been marketing hemp insulation products for several years. Hemp is a low environmental impact material. Neither herbicide nor pesticide is used during the growth of hemp. The fibers are extracted in a waste-free and chemical-free mechanical process. Hemp can consume CO2 during its growth. In addition, hemp fiber can be disposed of harmlessly by composting or incineration at the end of its life. Hemp fibers are processed and treated only minimally to resist rot and fungal activity. There is little health risk when producing and installing the insulation, thanks to the absence of toxic additive. Its thermal resistance is comparable to mineral wool. But the development and marketing of hemp fibers may be restricted in North America.

  11. Photonic Floquet Topological Insulators

    CERN Document Server

    Rechtsman, Mikael C; Plotnik, Yonatan; Lumer, Yaakov; Nolte, Stefan; Segev, Mordechai; Szameit, Alexander

    2012-01-01

    The topological insulator is a fundamentally new phase of matter, with the striking property that the conduction of electrons occurs only on its surface, not within the bulk, and that conduction is topologically protected. Topological protection, the total lack of scattering of electron waves by disorder, is perhaps the most fascinating and technologically important aspect of this material: it provides robustness that is otherwise known only for superconductors. However, unlike superconductivity and the quantum Hall effect, which necessitate low temperatures or magnetic fields, the immunity to disorder of topological insulators occurs at room temperature and without any external magnetic field. For this reason, topological protection is predicted to have wide-ranging applications in fault-tolerant quantum computing and spintronics. Recently, a large theoretical effort has been directed towards bringing the concept into the domain of photonics: achieving topological protection of light at optical frequencies. ...

  12. Improved DC Gun Insulator

    Energy Technology Data Exchange (ETDEWEB)

    M.L. Neubauer, K.B. Beard, R. Sah, C. Hernandez-Garcia, G. Neil

    2009-05-01

    Many user facilities such as synchrotron light sources and free electron lasers require accelerating structures that support electric fields of 10-100 MV/m, especially at the start of the accelerator chain where ceramic insulators are used for very high gradient DC guns. These insulators are difficult to manufacture, require long commissioning times, and have poor reliability, in part because energetic electrons bury themselves in the ceramic, creating a buildup of charge and causing eventual puncture. A novel ceramic manufacturing process is proposed. It will incorporate bulk resistivity in the region where it is needed to bleed off accumulated charge caused by highly energetic electrons. This process will be optimized to provide an appropriate gradient in bulk resistivity from the vacuum side to the air side of the HV standoff ceramic cylinder. A computer model will be used to determine the optimum cylinder dimensions and required resistivity gradient for an example RF gun application. A ceramic material example with resistivity gradient appropriate for use as a DC gun insulator will be fabricated by glazing using doping compounds and tested.

  13. Imaging Dirac-Mass Disorder from Magnetic Dopant-Atoms in the Ferromagnetic Topological Insulator Crx(Bi0.1Sb0.9)2-xTe3 - Part II

    Science.gov (United States)

    Lee, Inhee; Kim, Chung Koo; Lee, Jinho; Billinge, Simon; Zhong, Ruidan; Schneeloch, John; Liu, Tiansheng; Tranquada, John; Gu, Genda; Davis, J. C.

    2015-03-01

    We present Part II of the spectroscopic imaging - scanning tunneling microscopy (SI-STM) study of ferromagnetic Crx(Bi0.1Sb0.9)2-xTe3 single crystals measured at 4.5 K. As Part II we show how both spectroscopic analysis in real and momentum space demonstrate the coincident Dirac mass gap identified. Distribution of gap width, gap center, and gap anisotropy will be discussed. The anticipated relationship Δ (r) ~ n (r) is confirmed throughout, and exhibits an electron-dopant interaction energy J* = 145 meV .nm2. These observations reveal how magnetic dopant atoms actually generate the TI mass gap and that, to achieve the novel physics expected of time-reversal-symmetry breaking TI materials, control of the resulting Dirac-mass gap disorder will be essential.

  14. Low Temperature Conductivity in n-Type Noncompensated Silicon below Insulator-Metal Transition

    Directory of Open Access Journals (Sweden)

    A. L. Danilyuk

    2017-01-01

    Full Text Available We investigate the transport properties of n-type noncompensated silicon below the insulator-metal transition by measuring the electrical and magnetoresistances as a function of temperature T for the interval 2–300 K. Experimental data are analyzed taking into account possible simple activation and hopping mechanisms of the conductivity in the presence of two impurity bands, the upper and lower Hubbard bands (UHB and LHB, resp.. We demonstrate that the charge transport develops with decreasing temperature from the band edge activation (110–300 K to the simple activation with much less energy associated with the activation motion in the UHB (28–90 K. Then, the Mott-type variable range hopping (VRH with spin dependent hops occurs (5–20 K. Finally, the VRH in the presence of the hard gap (HG between LHB and UHB (2–4 K takes place. We propose the empiric expression for the low T density of states which involves both the UHB and LHB and takes into account the crossover from the HG regime to the Mott-type VRH with increasing temperature. This allows us to fit the low T experimental data with high accuracy.

  15. Ionization by ion impact at grazing incidence on insulator surface

    CERN Document Server

    Martiarena, M L

    2003-01-01

    We have calculated the energy distribution of electrons produced by ionization of the ionic crystal electrons in grazing fast ion-insulator surface collision. The ionized electrons originate in the 2p F sup - orbital. We observe that the binary peak appears as a double change in the slope of the spectra, in the high energy region. The form of the peak is determined by the initial electron distribution and its position will be affected by the binding energy of the 2p F sup - electron in the crystal. This BEP in insulator surfaces will appear slightly shifted to the low energy side with respect the ion-atom one.

  16. Electron beam assisted field evaporation of insulating nanowires/tubes

    Energy Technology Data Exchange (ETDEWEB)

    Blanchard, N. P., E-mail: nicholas.blanchard@univ-lyon1.fr; Niguès, A.; Choueib, M.; Perisanu, S.; Ayari, A.; Poncharal, P.; Purcell, S. T.; Siria, A.; Vincent, P. [Institut Lumière Matière, UMR5306 Université Lyon 1-CNRS, Université de Lyon, 69622 Villeurbanne Cedex (France)

    2015-05-11

    We demonstrate field evaporation of insulating materials, specifically BN nanotubes and undoped Si nanowires, assisted by a convergent electron beam. Electron irradiation leads to positive charging at the nano-object's apex and to an important increase of the local electric field thus inducing field evaporation. Experiments performed both in a transmission electron microscope and in a scanning electron microscope are presented. This technique permits the selective evaporation of individual nanowires in complex materials. Electron assisted field evaporation could be an interesting alternative or complementary to laser induced field desorption used in atom probe tomography of insulating materials.

  17. High Gradient Multilayer Insulator Technology

    Energy Technology Data Exchange (ETDEWEB)

    Sampayan, S E; Caporaso, G J; Nunnally, W C; Sanders, D M; Watson, J A; Krogh, M L; Anderson, H U

    2004-06-03

    We are investigating a novel insulator concept that involves the use of alternating layers of conductors and insulators with periods less than 1 mm. These structures perform 1.5 to 4 times better than conventional insulators in long pulse, short pulse, and alternating polarity applications. We survey our ongoing studies investigating the performance under long pulse electron beam, short pulse, and full reversing conditions.

  18. Transport Experiments on Topological Insulators

    Science.gov (United States)

    2016-08-16

    UU UU UU 16-08-2016 15-Sep-2011 14-Oct-2014 Final Report: Transport Experiments on Topological Insulators The views, opinions and/or findings contained...Triangle Park, NC 27709-2211 Topological Insulators, Dirac Semimetals, Transport in magnetic field, High mobility REPORT DOCUMENTATION PAGE 11. SPONSOR...ABSTRACT Final Report: Transport Experiments on Topological Insulators Report Title The ARO-supported research focused on uncovering novel materials and

  19. Manifold Insulation for Solar Collectors

    Science.gov (United States)

    1982-01-01

    Results of computer analysis of effects of various manifold insulation detailed in 23-page report show that if fluid is distributed to and gathered from array of solar collectors by external rather than internal manifold, effectiveness of manifold insulation has major influence on efficiency. Report describes required input data and presents equations that govern computer model. Provides graphs comparing collector efficiencies for representative manifold sizes and insulations.

  20. Entanglement Entropy across the Superfluid-Insulator Transition: A Signature of Bosonic Criticality.

    Science.gov (United States)

    Frérot, Irénée; Roscilde, Tommaso

    2016-05-13

    We study the entanglement entropy and entanglement spectrum of the paradigmatic Bose-Hubbard model, describing strongly correlated bosons on a lattice. The use of a controlled approximation-the slave-boson approach-allows us to study entanglement in all regimes of the model (and, most importantly, across its superfluid-Mott-insulator transition) at a minimal cost. We find that the area-law scaling of entanglement-verified in all the phases-exhibits a sharp singularity at the transition. The singularity is greatly enhanced when the transition is crossed at fixed, integer filling, due to a richer entanglement spectrum containing an additional gapless mode, which descends from the amplitude (Higgs) mode of the global excitation spectrum-while this mode remains gapped at the generic (commensurate-incommensurate) transition with variable filling. Hence, the entanglement properties contain a unique signature of the two different forms of bosonic criticality exhibited by the Bose-Hubbard model.

  1. Magnetic states, correlation effects and metal-insulator transition in FCC lattice

    Science.gov (United States)

    Timirgazin, M. A.; Igoshev, P. A.; Arzhnikov, A. K.; Irkhin, V. Yu

    2016-12-01

    The ground-state magnetic phase diagram (including collinear and spiral states) of the single-band Hubbard model for the face-centered cubic lattice and related metal-insulator transition (MIT) are investigated within the slave-boson approach by Kotliar and Ruckenstein. The correlation-induced electron spectrum narrowing and a comparison with a generalized Hartree-Fock approximation allow one to estimate the strength of correlation effects. This, as well as the MIT scenario, depends dramatically on the ratio of the next-nearest and nearest electron hopping integrals {{t}\\prime}/t . In contrast with metallic state, possessing substantial band narrowing, insulator one is only weakly correlated. The magnetic (Slater) scenario of MIT is found to be superior over the Mott one. Unlike simple and body-centered cubic lattices, MIT is the first order transition (discontinuous) for most {{t}\\prime}/t . The insulator state is type-II or type-III antiferromagnet, and the metallic state is spin-spiral, collinear antiferromagnet or paramagnet depending on {{t}\\prime}/t . The picture of magnetic ordering is compared with that in the standard localized-electron (Heisenberg) model.

  2. Percolative metal-insulator transition in LaMnO3

    Science.gov (United States)

    Sherafati, M.; Baldini, M.; Malavasi, L.; Satpathy, S.

    2016-01-01

    We show that the pressure-induced metal-insulator transition (MIT) in LaMnO3 is fundamentally different from the Mott-Hubbard transition and is percolative in nature, with the measured resistivity obeying the percolation scaling laws. Using the Gutzwiller method to treat correlation effects in a model Hamiltonian that includes both Coulomb and Jahn-Teller interactions, we show, one, that the MIT is driven by a competition between electronic correlation and the electron-lattice interaction, an issue that has been long debated, and two, that with compressed volume, the system has a tendency towards phase separation into insulating and metallic regions, consisting, respectively, of Jahn-Teller distorted and undistorted octahedra. This tendency manifests itself in a mixed phase of intermixed insulating and metallic regions in the experiment. Conduction in the mixed phase occurs by percolation and the MIT occurs when the metallic volume fraction, steadily increasing with pressure, exceeds the percolation threshold vc≈0.29 . Measured high-pressure resistivity follows the percolation scaling laws quite well, and the temperature dependence follows the Efros-Shklovskii variable-range hopping behavior for granular materials.

  3. Low Permeability Polyimide Insulation Project

    Data.gov (United States)

    National Aeronautics and Space Administration — Resodyn Technologies proposes a new technology that enables the application of polyimide based cryogenic insulation with low hydrogen permeability. This effort...

  4. External pumping of hybrid nanostructures in microcavity with Frenkel and Wannier-Mott excitons

    Science.gov (United States)

    Dubovskiy, O. A.; Agranovich, V. M.

    2016-09-01

    The exciton-exciton interaction in hybrid nanostructures with resonating Frenkel and Wannier-Mott excitons was investigated in many publications. In microcavity the hybrid nanostructures can be exposed to different types of optical pumping, the most common one being pumping through one of the microcavity side. However, not investigated and thus never been discussed the hybrid excitons generation by pumping of confined quantum wells from the side of empty microcavity without nanostructures in a wave guided configuration. Here, we consider the hybrid excitations in cavity with organic and inorganic quantum wells and with different types of pumping from external source. The frequency dependence for intensity of excitations in hybrid structure is also investigated. The results may be used for search of most effective fluorescence and relaxation processes. The same approach may be used when both quantum wells are organic or inorganic.

  5. Itinerant antiferromagnetism in the Mott compound V1.973O3

    Science.gov (United States)

    Bao, Wei; Broholm, C.; Honig, J. M.; Metcalf, P.; Trevino, S. F.

    1996-08-01

    The doping-induced metallic state of the Mott system V2-yO3 has spin-density-wave order for T

  6. Entropic Origin of Pseudogap Physics and a Mott-Slater Transition in Cuprates

    Science.gov (United States)

    Markiewicz, R. S.; Buda, I. G.; Mistark, P.; Lane, C.; Bansil, A.

    2017-01-01

    We propose a new approach to understand the origin of the pseudogap in the cuprates, in terms of bosonic entropy. The near-simultaneous softening of a large number of different q-bosons yields an extended range of short-range order, wherein the growth of magnetic correlations with decreasing temperature T is anomalously slow. These entropic effects cause the spectral weight associated with the Van Hove singularity (VHS) to shift rapidly and nearly linearly toward half filling at higher T, consistent with a picture of the VHS driving the pseudogap transition at a temperature ~T*. As a byproduct, we develop an order-parameter classification scheme that predicts supertransitions between families of order parameters. As one example, we find that by tuning the hopping parameters, it is possible to drive the cuprates across a transition between Mott and Slater physics, where a spin-frustrated state emerges at the crossover. PMID:28327627

  7. One-step approach to ARPES from strongly correlated solids: A Mott-Hubbard system

    Science.gov (United States)

    Kuzian, R. O.; Krasovskii, E. E.

    2016-09-01

    An expression is derived for angle-resolved photocurrent from a semi-infinite correlated system. Within the sudden approximation, the photocurrent is proportional to the spectral function of a one-particle two-time retarded Green's function G of an operator that creates an electron in a special quantum state χ localized at the surface. For a system described by a many-body single-band model, we present an analytical expression that relates the Green's function G with the Green's function of an infinite crystal Gb ,k(ω ) in Wannier representation. The role of final states and of the crystal surface is analyzed for a model Green's function of the infinite crystal with a three-peak spectral function typical of a Mott-Hubbard metal. The momentum dependences of both the quasiparticle pole position and the spectral weight of the incoherent band manifest themselves in the shape of the photocurrent energy distribution curve.

  8. Oferta de forragem de capim-elefante anão 'Mott' e o rendimento animal

    OpenAIRE

    Almeida Edison Xavier de; Maraschin Gerzy Ernesto; Harthmann Oscar Emilio Ludtke; Ribeiro Filho Henrique Mendonça Nunes; Setelich Elena Apesteguia

    2000-01-01

    A pesquisa foi realizada durante as estações de crescimento de 1994/95 e 1995/96 (out./abr.), na Estação Experimental de Ituporanga/EPAGRI - SC, objetivando determinar o potencial de produção animal e as respostas em termos de taxa de acúmulo de matéria seca (MS) e qualidade de forragem e estrutura do perfil de uma pastagem de capim-elefante anão `Mott' (CEAM) submetida a quatro níveis de oferta de forragem (OF). Os níveis reais de FO foram 3,8; 7,5; 10,2 e 14,0 kg de MS de lâminas verdes (MS...

  9. Super insulating aerogel glazing

    DEFF Research Database (Denmark)

    Schultz, Jørgen Munthe; Jensen, Karsten Ingerslev; Kristiansen, Finn Harken

    2005-01-01

    This paper describes the application results of a previous and current EU-project on super insulating glazing based on monolithic silica aerogel. Prototypes measuring approx. 55´55 cm2 have been made with 15 mm evacuated aerogel between two layers of low-iron glass. Anti-reflective treatment...... of the glass and a heat-treatment of the aerogel increases the visible quality and the solar energy transmittance. A low-conductive rim seal solution with the required vacuum barrier properties has been developed along with a reliable assembly and evacuation process. The prototypes have a centre heat loss...

  10. Corrosion, ion release and Mott-Schottky probe of chromium oxide coatings in saline solution with potential for orthopaedic implant applications

    Science.gov (United States)

    Ogwu, A. A.; Oje, A. M.; Kavanagh, J.

    2016-04-01

    We report our investigation on chromium oxide thin film coatings that show a negligible ion release during electrochemical corrosion testing in saline solution. The chemical constituents of the films prepared by reactive magnetron sputtering were identified to be predominantly Cr2O3 based on Raman spectroscopy anti-symmetric stretching vibration modes for CrIII-O and other peaks and an FTIR spectroscopy E u vibrational mode at 409 cm-1. X-ray photoelectron spectroscopy, multiplet fitting for 2P 3/2 and 2P 1/2 states also confirmed the predominantly Cr2O3 stoichiometry in the films. The prepared chromium oxide coatings showed superior pitting corrosion resistance compared to the native chromium oxide films on bare uncoated stainless steel when tested under open circuit potential, potentiodynamic polarisation and cyclic voltammetry in saline solution. The chromium ion released into solution during the corrosion testing of stainless steel substrates coated with chromium oxide coatings was found to be negligibly small based on atomic absorption spectroscopy measurements. Our Mott-Schottky analysis investigation showed that the negligibly small ion release from the chromium oxide coated steel substrates is most likely due to a much lower defect density on the surface of the deposited coatings compared to the native oxide layer on the uncoated steel substrates. This opens up the opportunity for using chromium oxide surface coatings in hip, knee and other orthopaedic implants where possible metal ion release in vivo still poses a great challenge.

  11. The Electromagnetic Green's Function for Layered Topological Insulators

    CERN Document Server

    Crosse, J A; Buhmann, Stefan Yoshi

    2015-01-01

    The dyadic Green's function of the inhomogeneous vector Helmholtz equation describes the field pattern of a single frequency point source. It appears in the mathematical description of many areas of electromagnetism and optics including both classical and quantum, linear and nonlinear optics, dispersion forces (such as the Casimir and Casimir-Polder forces) and in the dynamics of trapped atoms and molecules. Here, we compute the Green's function for a layered topological insulator. Via the magnetoelectric effect, topological insulators are able to mix the electric, E, and magnetic induction, B, fields and, hence, one finds that the TE and TM polarizations mix on reflection from/transmission through an interface. This leads to novel field patterns close to the surface of a topological insulator.

  12. The influence of insulation materials on corrosion under insulation

    Energy Technology Data Exchange (ETDEWEB)

    Williams, J.; Evans, O. [Aspen Aerogels Inc., Northborough, MA (United States)

    2010-07-01

    This paper discussed the ways in which insulation materials influence corrosion under insulation (CUI) behaviour. Laboratory and field tests of 7 industrial insulation materials and 1 composite system were conducted to identify metrics for improving insulation system designs and determine insulation degradation mechanisms. The tested materials included calcium silicate; expanded perlite; cellular glass; mineral wool; and 2 types of aerogel blanket material. Twelve-week accelerated corrosion tests were conducted to gauge the level of corrosion that occurred beneath the materials on uncoated carbon steel pipe. Drying rate curves for porous materials were also established. A series of aqueous extraction studies was conducted to characterize the durability of various inhibitors on the pipe samples. Results of the study showed that the use of corrosion inhibitors and ensuring the thermal stability of hydrophobing agents will help to prevent CUI. 16 refs., 7 tabs., 17 figs.

  13. A natural topological insulator.

    Science.gov (United States)

    Gehring, P; Benia, H M; Weng, Y; Dinnebier, R; Ast, C R; Burghard, M; Kern, K

    2013-03-13

    The earth's crust and outer space are rich sources of technologically relevant materials which have found application in a wide range of fields. Well-established examples are diamond, one of the hardest known materials, or graphite as a suitable precursor of graphene. The ongoing drive to discover novel materials useful for (opto)electronic applications has recently drawn strong attention to topological insulators. Here, we report that Kawazulite, a mineral with the approximate composition Bi2(Te,Se)2(Se,S), represents a naturally occurring topological insulator whose electronic properties compete well with those of its synthetic counterparts. Kawazulite flakes with a thickness of a few tens of nanometers were prepared by mechanical exfoliation. They exhibit a low intrinsic bulk doping level and correspondingly a sizable mobility of surface state carriers of more than 1000 cm(2)/(V s) at low temperature. Based on these findings, further minerals which due to their minimized defect densities display even better electronic characteristics may be identified in the future.

  14. Electric field sensing near the surface microstructure of an atom chip using cold Rydberg atoms

    CERN Document Server

    Carter, J D; Martin, J D D

    2012-01-01

    The electric fields near the heterogeneous metal/dielectric surface of an atom chip were measured using cold atoms. The atomic sensitivity to electric fields was enhanced by exciting the atoms to Rydberg states that are 10^8 times more polarizable than the ground state. We attribute the measured fields to charging of the insulators between the atom chip wires. Surprisingly, it is observed that these fields may be dramatically lowered with appropriate voltage biasing, suggesting configurations for the future development of hybrid quantum systems.

  15. The birth of topological insulators.

    Science.gov (United States)

    Moore, Joel E

    2010-03-11

    Certain insulators have exotic metallic states on their surfaces. These states are formed by topological effects that also render the electrons travelling on such surfaces insensitive to scattering by impurities. Such topological insulators may provide new routes to generating novel phases and particles, possibly finding uses in technological applications in spintronics and quantum computing.

  16. Electric fields and electrical insulation

    DEFF Research Database (Denmark)

    McAllister, Iain Wilson

    2002-01-01

    The adoption of a field-theoretical approach to problems arising in the framework of electrical insulation is discussed with reference to six main topics, which have been addressed over the last 30 years. These include uniform field electrodes, Green's differential equation, electrode surface......, it is amply demonstrated that such an approach can lead to significant progress in many areas of electrical insulation....

  17. Tailorable Advanced Blanket Insulation (TABI)

    Science.gov (United States)

    Sawko, Paul M.; Goldstein, Howard E.

    1987-01-01

    Single layer and multilayer insulating blankets for high-temperature service fabricated without sewing. TABI woven fabric made of aluminoborosilicate. Triangular-cross-section flutes of core filled with silica batting. Flexible blanket formed into curved shapes, providing high-temperature and high-heat-flux insulation.

  18. Topological Insulators from Electronic Superstructures

    Science.gov (United States)

    Sugita, Yusuke; Motome, Yukitoshi

    2016-07-01

    The possibility of realizing topological insulators by the spontaneous formation of electronic superstructures is theoretically investigated in a minimal two-orbital model including both the spin-orbit coupling and electron correlations on a triangular lattice. Using the mean-field approximation, we show that the model exhibits several different types of charge-ordered insulators, where the charge disproportionation forms a honeycomb or kagome superstructure. We find that the charge-ordered insulators in the presence of strong spin-orbit coupling can be topological insulators showing quantized spin Hall conductivity. Their band gap is dependent on electron correlations as well as the spin-orbit coupling, and even vanishes while showing the massless Dirac dispersion at the transition to a trivial charge-ordered insulator. Our results suggest a new route to realize and control topological states of quantum matter by the interplay between the spin-orbit coupling and electron correlations.

  19. Technology Solutions Case Study: Insulating Concrete Forms

    Energy Technology Data Exchange (ETDEWEB)

    none,

    2012-10-01

    This Pacific Northwest National Laboratory project investigated insulating concrete forms—rigid foam, hollow walls that are filled with concrete for highly insulated, hurricane-resistant construction.

  20. Electric Insulation Detection Method for High-voltage Insulators

    Directory of Open Access Journals (Sweden)

    Wang Jiajun

    2013-07-01

    Full Text Available The principle of partial discharge detection is that through partial bridged discharge under high voltage electric field, it detects the inner air-filled cavity of high-voltage insulators. And it is a nondestructive detection method based on discharge magnitude to judge the insulation quality. The detecting system that adopts the partial discharge detection is more rigorous than testing system for electricity products, which must have small discharge capacity and higher sensitivity. This paper describes the principles of partial discharge detection and analysis insulation detection.

  1. Mott-Hubbard transition in the mass-imbalanced Hubbard model

    Science.gov (United States)

    Philipp, Marie-Therese; Wallerberger, Markus; Gunacker, Patrik; Held, Karsten

    2017-06-01

    The mass-imbalanced Hubbard model represents a continuous evolution from the Hubbard to the Falicov-Kimball model. We employ dynamical mean field theory and study the paramagnetic metal-insulator transition, which has a very different nature for the two limiting models. Our results indicate that the metal-insulator transition rather resembles that of the Hubbard model as soon as a tiny hopping between the more localized fermions is switched on. At low temperatures we observe a first-order metal-insulator transition and a three peak structure. The width of the central peak is the same for the more and less mobile fermions when approaching the phase transition, which agrees with our expectation of a common Kondo temperature and phase transition for the two species.

  2. Chemically gated electronic structure of a superconducting doped topological insulator system

    Science.gov (United States)

    Wray, L. A.; Xu, S.; Neupane, M.; Fedorov, A. V.; Hor, Y. S.; Cava, R. J.; Hasan, M. Z.

    2013-07-01

    Angle resolved photoemission spectroscopy is used to observe changes in the electronic structure of bulk-doped topological insulator CuxBi2Se3 as additional copper atoms are deposited onto the cleaved crystal surface. Carrier density and surface-normal electrical field strength near the crystal surface are estimated to consider the effect of chemical surface gating on atypical superconducting properties associated with topological insulator order, such as the dynamics of theoretically predicted Majorana Fermion vortices.

  3. Homeowners' demand for home insulation

    Energy Technology Data Exchange (ETDEWEB)

    None

    1978-04-01

    The survey was conducted to provide guidance based on the views and experience of a national sample of homeowners about the insulation of their homes. The telephone survey was conducted with 1,012 homeowners between January 12 and 22, 1978 in the East, Midwest, South, and West regions of the U.S. From the survey data were compiled on plans for installing home insulation with emphasis on attic insulation; how many homes now have various types of insulation; recent experiences in obtaining attic insulation--its cost, material used, when installed, whether installed by the homeowner or a contractor; the kinds of insulation thought to be needed--attic insulation, wall insulation, storm doors and windows; whether homeowners planning attic insulation feel that they have the necessary information to do the work themselves or if they feel they know enough to make the necessary arrangements with a contractor; the effect of higher fuel costs on likelihood of installing attic insulation; shortages of insulating materials; what sources of information are relied on when planning attic insulation; attitudes toward having utility companies install insulation to be paid for by means of utility bills; how much trust homeowners have in the advice of government, utility companies, insulation manufacturers, insulation installers, and retail stores about how much insulation is needed; the likely effect of a tax credit on plans to insulate the attic; and the concern about energy shortages.

  4. Complex Materials by Atomic Layer Deposition.

    Science.gov (United States)

    Schwartzberg, Adam M; Olynick, Deirdre

    2015-10-14

    Complex materials are defined as nanostructured materials with combinations of structure and/or composition that lead to performance surpassing the sum of their individual components. There are many methods that can create complex materials; however, atomic layer deposition (ALD) is uniquely suited to control composition and structural parameters at the atomic level. The use of ALD for creating complex insulators, semiconductors, and conductors is discussed, along with its use in novel structural applications.

  5. Insulation. [In the glass industry

    Energy Technology Data Exchange (ETDEWEB)

    Perkins, J.M.; Horsfield, M.; Jackson, J.D.J.; Woodhead, D.

    1990-12-01

    Furnace insulation in the glass industry is becoming increasingly important as fuel prices rise. Refractory materials with a large number of small pores separated from each other by very thin membranes of refractory produce good insulation. Four main types are used to cope efficiently with the range of temperature involved and the different areas of application. Insulation intended for use at very high temperatures is not as efficient as some of the low temperature materials consequently the insulation is built up in several layers to obtain the optimum efficiency. Insulating bricks are available for various temperatures up to 1850{sup 0}C depending on their chemical composition. Castables, produced by mixing high alumina cements and light-weight refractory aggregates, are quick to install and can be formed into any shape or size. Ceramic fibres felted together to form low density, highly porous, blankets, boards, paper and modules can be used up to 1600{sup 0}C. Microporous insulation based on an ultrafine powder of amorphous silica has a limited temperature range, is subject to chemical attack and abrasion, but has the lowest thermal conductivity of any insulation material available. Criteria for the use of materials in different furnace areas and examples of their application are given. (U.K.).

  6. Mott-Hubbard transition in the mass-imbalanced Hubbard model

    OpenAIRE

    Philipp, Marie-Therese; Wallerberger, Markus; Gunacker, Patrik; Held, Karsten

    2016-01-01

    The mass-imbalanced Hubbard model represents a continuous evolution from the Hubbard to the Falicov-Kimball model. We employ dynamical mean field theory and study the paramagnetic metal-insulator transition, which has a very different nature for the two limiting models. Our results indicate that the metal-insulator transition rather resembles that of the Hubbard model as soon as a tiny hopping between the more localized fermions is switched on. At low temperatures we observe a first-order met...

  7. Lar Onsager Prize Talk: An Exactly solvable model for Strontium Copper Borate: Mott Hubbard Physics on an Archimedean Lattices

    Science.gov (United States)

    Shastry, Sriram

    2009-03-01

    An exactly solvable model of spin half particles on a certain 2-dimensional frustrated lattice has been recently realized in the compound SrCu2(BO3)2, and other similar systems have been found more recently. These systems appear to be ideal testing grounds for contemporary theoretical ideas on the role of correlations and frustration in Mott Hubbard systems. In this talk I will summarize the work on these systems emphasizing their role in testing key concepts.

  8. Superfluid-Mott transitions and vortices in the Jaynes-Cummings-Hubbard lattices with time-reversal-symmetry breaking

    Science.gov (United States)

    Hayward, A. L. C.; Martin, A. M.

    2016-02-01

    We investigate the ground-state behavior of Jaynes-Cummings-Hubbard lattices in the presence of a synthetic magnetic field, via a Gutzwiller ansatz. Specifically, we study the superfluid-Mott transition and the formation of vortex lattices in the superfluid regime. We find a suppression of the superfluid fraction due to the frustration induced by the incommensurate magnetic and spacial lattice lengths. We also predict the formation of triangular vortex lattices inside the superfluid regime.

  9. Inhomogeneous electronic state near the insulator-to-metal transition in the correlated oxide VO2

    Science.gov (United States)

    Frenzel, A.; Qazilbash, M. M.; Brehm, M.; Chae, Byung-Gyu; Kim, Bong-Jun; Kim, Hyun-Tak; Balatsky, A. V.; Keilmann, F.; Basov, D. N.

    2009-09-01

    We investigate the percolative insulator-to-metal transition (IMT) in films of the correlated material vanadium dioxide (VO2) . Scattering-type scanning near-field infrared microscopy and atomic force microscopy were used to explore the relationship between the nucleation of metallic regions and the topography in insulating VO2 . We demonstrate that the IMT begins within 10 nm from grain boundaries and crevices by using mean curvature and statistical analysis. We also observe coexistence of insulating and metallic domains in a single crystalline grain that points to intrinsic inhomogeneity in VO2 due to competing electronic phases in the IMT regime.

  10. Non-ohmic behavior of metal-insulator granular thin films in low-field regime (eΔV ≪ kBT)

    Science.gov (United States)

    Boff, M. A. S.; Canto, B.; Mesquita, F.; Hinrichs, R.; Fraga, G. L. F.; Pereira, L. G.

    2016-10-01

    Non-ohmic behavior is not expected in metal-insulator granular systems in a low-field regime. There is no model to explain this behavior, even though it has been reported in several metal-insulator granular thin films (Fe-Al2O3, Co-Al2O3, and Ti-SiO2). In this paper, we show additional experimental results of Fe-SiO2 granular films and propose an explanation for the electrical properties of all above mentioned systems, based on Mott variable range hopping. The experimental results show that the localization length increases and the electrical resistance decreases with the increase of electrical potential or current. The non-ohmic behavior of the resistance and the increase of the localization length with increasing current are explained by the activation of new pathways for electrons in granular thin films that contain variable grain sizes and/or have different distances between grains.

  11. Specific features of insulator-metal transitions under high pressure in crystals with spin crossovers of 3d ions in tetrahedral environment

    Energy Technology Data Exchange (ETDEWEB)

    Lobach, K. A., E-mail: ks-ad@yandex.ru; Ovchinnikov, S. G., E-mail: sgo@iph.krasn.ru [Siberian Federal University (Russian Federation); Ovchinnikova, T. M. [Russian Academy of Sciences, Sukachev Institute of Forest, Siberian Branch (Russian Federation)

    2015-01-15

    For Mott insulators with tetrahedral environment, the effective Hubbard parameter U{sub eff} is obtained as a function of pressure. This function is not universal. For crystals with d{sup 5} configuration, the spin crossover suppresses electron correlations, while for d{sup 4} configurations, the parameter U{sub eff} increases after a spin crossover. For d{sup 2} and d{sup 7} configurations, U{sub eff} increases with pressure in the high-spin (HS) state and is saturated after the spin crossover. Characteristic features of the insulator-metal transition are considered as pressure increases; it is shown that there may exist cascades of several transitions for various configurations.

  12. Hollow-atom probing of surfaces

    NARCIS (Netherlands)

    Limburg, J.

    1997-01-01

    This paper discusses the mechanisms governing the formation and decay of hollow atoms in front of (semi) conducting and insulating surfaces. First, the primary neutralization of the highly charged ions is treated in terms of the classical overbarrier model. Different views are presented. Then the mo

  13. Atomic energy

    CERN Multimedia

    1996-01-01

    Interviews following the 1991 co-operation Agreement between the Department of Atomic Energy (DAE) of the Government of India and the European Organization for Nuclear Research (CERN) concerning the participation in the Large Hadron Collider Project (LHC) . With Chidambaram, R, Chairman, Atomic Energy Commission and Secretary, Department of Atomic Energy, Department of Atomic Energy (DAE) of the Government of India and Professor Llewellyn-Smith, Christopher H, Director-General, CERN.

  14. Atom chips

    CERN Document Server

    Reichel, Jakob

    2010-01-01

    This book provides a stimulating and multifaceted picture of a rapidly developing field. The first part reviews fundamentals of atom chip research in tutorial style, while subsequent parts focus on the topics of atom-surface interaction, coherence on atom chips, and possible future directions of atom chip research. The articles are written by leading researchers in the field in their characteristic and individual styles.

  15. Disorder-induced structural transitions in topological insulating Ge-Sb-Te compounds

    Energy Technology Data Exchange (ETDEWEB)

    Kim, Jeongwoo; Jhi, Seung-Hoon, E-mail: jhish@postech.ac.kr [Department of Physics, Pohang University of Science and Technology, Pohang 790-784 (Korea, Republic of)

    2015-05-21

    The mechanism for the fast switching between amorphous, metastable, and crystalline structures in chalcogenide phase-change materials has been a long-standing puzzle. Based on first-principles calculations, we study the atomic and electronic properties of metastable Ge{sub 2}Sb{sub 2}Te{sub 5} and investigate the atomic disorder to understand the transition between crystalline hexagonal and cubic structures. In addition, we study the topological insulating property embedded in these compounds and its evolution upon structural changes and atomic disorder. We also discuss the role of the surface-like states arising from the topological insulating property in the metal-insulator transition observed in the hexagonal structure.

  16. Topological mirror insulators in one dimension

    Science.gov (United States)

    Lau, Alexander; van den Brink, Jeroen; Ortix, Carmine

    2016-10-01

    We demonstrate the existence of topological insulators in one dimension (1D) protected by mirror and time-reversal symmetries. They are characterized by a nontrivial Z2 topological invariant defined in terms of the "partial" polarizations, which we show to be quantized in the presence of a 1D mirror point. The topological invariant determines the generic presence or absence of integer boundary charges at the mirror-symmetric boundaries of the system. We check our findings against spin-orbit coupled Aubry-André-Harper models that can be realized, e.g., in cold-atomic Fermi gases loaded in one-dimensional optical lattices or in density- and Rashba spin-orbit-modulated semiconductor nanowires. In this setup, in-gap end-mode Kramers doublets appearing in the topologically nontrivial state effectively constitute a double-quantum dot with spin-orbit coupling.

  17. 16 CFR 460.18 - Insulation ads.

    Science.gov (United States)

    2010-01-01

    ... 16 Commercial Practices 1 2010-01-01 2010-01-01 false Insulation ads. 460.18 Section 460.18 Commercial Practices FEDERAL TRADE COMMISSION TRADE REGULATION RULES LABELING AND ADVERTISING OF HOME INSULATION § 460.18 Insulation ads. (a) If your ad gives an R-value, you must give the type of insulation...

  18. Metal-Insulator-Semiconductor Photodetectors

    Directory of Open Access Journals (Sweden)

    Chu-Hsuan Lin

    2010-09-01

    Full Text Available The major radiation of the Sun can be roughly divided into three regions: ultraviolet, visible, and infrared light. Detection in these three regions is important to human beings. The metal-insulator-semiconductor photodetector, with a simpler process than the pn-junction photodetector and a lower dark current than the MSM photodetector, has been developed for light detection in these three regions. Ideal UV photodetectors with high UV-to-visible rejection ratio could be demonstrated with III-V metal-insulator-semiconductor UV photodetectors. The visible-light detection and near-infrared optical communications have been implemented with Si and Ge metal-insulator-semiconductor photodetectors. For mid- and long-wavelength infrared detection, metal-insulator-semiconductor SiGe/Si quantum dot infrared photodetectors have been developed, and the detection spectrum covers atmospheric transmission windows.

  19. Measure Guideline: Basement Insulation Basics

    Energy Technology Data Exchange (ETDEWEB)

    Aldrich, R.; Mantha, P.; Puttagunta, S.

    2012-10-01

    This guideline is intended to describe good practices for insulating basements in new and existing homes, and is intended to be a practical resources for building contractors, designers, and also to homeowners.

  20. Metal-insulator-semiconductor photodetectors.

    Science.gov (United States)

    Lin, Chu-Hsuan; Liu, Chee Wee

    2010-01-01

    The major radiation of the sun can be roughly divided into three regions: ultraviolet, visible, and infrared light. Detection in these three regions is important to human beings. The metal-insulator-semiconductor photodetector, with a simpler process than the pn-junction photodetector and a lower dark current than the MSM photodetector, has been developed for light detection in these three regions. Ideal UV photodetectors with high UV-to-visible rejection ratio could be demonstrated with III-V metal-insulator-semiconductor UV photodetectors. The visible-light detection and near-infrared optical communications have been implemented with Si and Ge metal-insulator-semiconductor photodetectors. For mid- and long-wavelength infrared detection, metal-insulator-semiconductor SiGe/Si quantum dot infrared photodetectors have been developed, and the detection spectrum covers atmospheric transmission windows.

  1. Doping designed half-Heusler insulators

    Science.gov (United States)

    Yu, Yonggang; Zhang, Xiuwen; Yu, Liping; Yan, Feng; Nagaraja, A.; Mason, T. O.; Zunger, Alex

    2015-03-01

    The 18-valence-electron 1:1:1 compounds of the type III-X-V, IV-X-IV, IV-IX-V and V-IX-IV include thermoelectric materials, topological insulators, and recently a high mobility p-type transparent conductor TaIrGe (arXiv:1406.0872), yet their intrinsic doping trends are poorly known or understood. Using the ``modern theory of doping'' that addresses via DFT and HSE the thermodynamic formation energies and the DFT-corrected transition levels in the gap, we find the following interesting trends: (1) High atomic number compounds such as TaIrGe made of metallic elements can surprisingly have a large band gap (direct) of ~ 2.5 eV. (2) Half-Heusler such as A(IV)B(X)C(IV) is naturally n-type if its DFT calculated chemical stability field resides within the A-rich or B-rich domain of the stability triangle, while it is p-type if it resides within the C-rich domain. Such calculations provide a good metric. (3) When the B atom [at (1/4,1/4,1/4)] is as large as Ir or Pt, the compound prefers p-type because the C-on-A antisite [such as Ge Ta (1 -) ] is a shallow acceptor producing holes yet the hole-killer donor of B-interstitial is unfavorable. (4) When B =Ni or Co, the compound favors n-type due to the dominance of B-interstitial defects (e.g. TiCoSb). We will show the calculated leading defect types and the dependence of carrier concentrations on chemical conditions for newly predicted half-Heulser insulators. This study is supported by DOE, Office of Science, Basic Energy Science, MSE division grant to CU Boulder.

  2. Crystal imperfections and Mott parameters of sprayed nanostructure IrO{sub 2} thin films

    Energy Technology Data Exchange (ETDEWEB)

    Hassanien, A.S., E-mail: a.s.hassanien@gmail.com [Engineering Mathematics and Physics Department, Faculty of Engineering (Shoubra), Benha University (Egypt); Physics Department, Faculty of Science in Ad-Dawadmi, Shaqra University, 11911 (Saudi Arabia); Akl, Alaa A. [Physics Department, Faculty of Science in Ad-Dawadmi, Shaqra University, 11911 (Saudi Arabia)

    2015-09-15

    Nano-crystalline iridium oxide thin films were obtained by a spray pyrolysis technique onto preheated glass substrates. X-ray diffraction reveals that IrO{sub 2} thin films were polycrystalline in the rutile structure with primitive tetragonal lattice and its preferential orientation were along the 〈110〉 and 〈101〉 directions. X-ray diffraction line profile analysis (XRDLPA) was used to assign microstructure and crystal imperfections of IrO{sub 2} thin films. Some important parameters such as crystallite size, microstrain, average residual stress, number of crystallite/cm{sup 2} and dislocation density were studied. The effects of deposition temperatures and solution concentrations on the microstructural and crystal defects were discussed. All estimated values were found to be dependent upon the growth parameters. Mott parameters, trapping state energy and potential barrier were investigated and studied for a defined thin film sample. This sample was selected because it has the suitable conditions for electrochromic applications.

  3. Quantum criticality in the 122 iron pnictide superconductors emerging from orbital-selective Mottness

    Science.gov (United States)

    Das, S. D.; Laad, M. S.; Craco, L.; Gillett, J.; Tripathi, V.; Sebastian, S. E.

    2015-10-01

    The twin issues of the nature of the "normal" state and competing order(s) in the iron arsenides are central to understanding their unconventional, high-Tc superconductivity. We use a combination of transport anisotropy measurements on detwinned Sr (Fe1-xCox) 2As2 single crystals and local density approximation plus dynamical mean field theory (LDA + DMFT) calculations to revisit these issues. The peculiar resistivity anisotropy and its evolution with x are naturally interpreted in terms of an underlying orbital-selective Mott transition (OSMT) that gaps out the dx z or dy z states. Further, we use a Landau-Ginzburg approach using LDA + DMFT input to rationalize a wide range of anomalies seen up to optimal doping, providing strong evidence for secondary electronic nematic order. These findings suggest that strong dynamical fluctuations linked to a marginal quantum-critical point associated with this OSMT and a secondary electronic nematic order constitute an intrinsically electronic pairing mechanism for superconductivity in Fe arsenides.

  4. Atomic polarizabilities

    Energy Technology Data Exchange (ETDEWEB)

    Safronova, M. S. [Department of Physics and Astronomy, University of Delaware, Newark, DE 19716 (United States); Mitroy, J. [School of Engineering, Charles Darwin University, Darwin NT 0909 (Australia); Clark, Charles W. [Joint Quantum Institute, National Institute of Standards and Technology and the University of Maryland, Gaithersburg, Maryland 20899-8410 (United States); Kozlov, M. G. [Petersburg Nuclear Physics Institute, Gatchina 188300 (Russian Federation)

    2015-01-22

    The atomic dipole polarizability governs the first-order response of an atom to an applied electric field. Atomic polarization phenomena impinge upon a number of areas and processes in physics and have been the subject of considerable interest and heightened importance in recent years. In this paper, we will summarize some of the recent applications of atomic polarizability studies. A summary of results for polarizabilities of noble gases, monovalent, and divalent atoms is given. The development of the CI+all-order method that combines configuration interaction and linearized coupled-cluster approaches is discussed.

  5. Magnetically insulated opening switch research

    Science.gov (United States)

    McGeoch, M. W.; Kraft, R.

    1987-01-01

    We examine the feasibility of an opening switch concept based on magnetic insulation in a coaxial thermionic diode. It is found that the impedance ratio between closed and open states of the diode is marginal for efficient energy transfer via this type of switch. The open, or insulated state of the diode is characterized by current leakage across the magnetic field which is associated with the presence of plasma waves.

  6. Advances in Microsphere Insulation Systems

    Science.gov (United States)

    Allen, M. S.; Baumgartner, R. G.; Fesmire, J. E.; Augustynowicz, S. D.

    2004-06-01

    Microsphere insulation, typically consisting of hollow glass bubbles, combines in a single material the desirable properties that other insulations only have individually. The material has high crush strength, low density, is noncombustible, and performs well in soft vacuum. Microspheres provide robust, low-maintenance insulation systems for cryogenic transfer lines and dewars. They also do not suffer from compaction problems typical of perlite that result in the necessity to reinsulate dewars because of degraded thermal performance and potential damage to its support system. Since microspheres are load bearing, autonomous insulation panels enveloped with lightweight vacuum-barrier materials can be created. Comprehensive testing performed at the Cryogenics Test Laboratory located at the NASA Kennedy Space Center demonstrated competitive thermal performance with other bulk materials. Test conditions were representative of actual-use conditions and included cold vacuum pressure ranging from high vacuum to no vacuum and compression loads from 0 to 20 psi. While microspheres have been recognized as a legitimate insulation material for decades, actual implementation has not been pursued. Innovative microsphere insulation system configurations and applications are evaluated.

  7. Ultracold atoms on atom chips

    DEFF Research Database (Denmark)

    Krüger, Peter; Hofferberth, S.; Haller, E.

    2005-01-01

    Miniaturized potentials near the surface of atom chips can be used as flexible and versatile tools for the manipulation of ultracold atoms on a microscale. The full scope of possibilities is only accessible if atom-surface distances can be reduced to microns. We discuss experiments in this regime...

  8. Low-temperature study of array of dopant atoms on transport behaviors in silicon junctionless nanowire transistor

    Energy Technology Data Exchange (ETDEWEB)

    Wang, Hao; Han, Weihua, E-mail: weihua@semi.ac.cn; Li, Xiaoming; Zhang, Yanbo; Yang, Fuhua [Engineering Research Center for Semiconductor Integration Technology, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083 (China)

    2014-09-28

    We demonstrate temperature-dependent quantum transport characteristics in silicon junctionless nanowire transistor fabricated on Silicon-on-Insulator substrate by the femtosecond laser lithography. Clear drain-current oscillations originated from dopant-induced quantum dots are observed in the initial stage of the conduction for the silicon nanowire channel at low temperatures. Arrhenius plot of the conductance indicates the transition temperature of 30 K from variable-range hopping to nearest-neighbor hopping, which can be well explained under Mott formalism. The transition of electron hopping behavior is the interplay result between the thermal activation and the Coulomb interaction.

  9. Quantum Magnetic Oscillations of the Surface Tension at a Metal-Insulator Interface

    Science.gov (United States)

    Dubovskii, L. B.

    2016-03-01

    Any metal-insulator transition (MI transition) in a crystalline material must be a transition from a situation in which electronic bands overlap to a situation when they do not (Mott, Metal-insulator, 2nd edn. Taylor@Francis, London, 1990). For this case the self-consistent equations for the two-band conductor are formulated (cf. Dubovskii, JETP Lett. 99(1):22-26, 2014). The description of the MI phase transition is based on two order parameters. The first one is the material density distribution at the MI boundary ρ ({vec {r}}). The second one is a four-component complex vector in spin space Upsilon ({vec {r}}). The value Upsilon ({vec {r}}) determines the electron density in the metallic or semimetallic phase in the presence of an external magnetic field. Two different components of the vector describe possible spin states of electrons and holes inserted in the external magnetic field. The solution gives a singular behavior of the surface tension at the MI interface in the vicinity of the MI phase transition. At low temperature quantum oscillations of the surface tension in the magnetic field take place.

  10. Ab initio study of metal-insulator transition in VO2

    Science.gov (United States)

    Zheng, Huihuo; Wagner, Lucas K.

    2013-03-01

    The structure distortion accompanied metal-insulator transition (MIT) of vanadium dioxide (VO2) at 340K has been a matter of ongoing controversy for near four decades. It is still unclear whether the nature of this transition is due to a Peierls instability, a Mott-Hubbard transition, or other physics. Most density functional theory based methods fail to describe the nature of the electronic state in this system, further complicating theoretical description of VO2. We will report on progress in applying the first principles diffusion quantum Monte Carlo method to the electronic structure of VO2 in the metallic and insulator phases. By examining the energetic properties, one particle reduced density matrix, as well as other static correlations in the two phases of the system, we will comment on which of the two common descriptions is a closer representation of the physical reality of VO2. This work was supported by the Strategic Research Initiatives project at Illinois(HZ) and NSF DMR 12-06242 (LKW).

  11. Investigation of the impact of insulator material on the performance of dissimilar electrode metal-insulator-metal diodes

    Science.gov (United States)

    Alimardani, Nasir; King, Sean W.; French, Benjamin L.; Tan, Cheng; Lampert, Benjamin P.; Conley, John F.

    2014-07-01

    The performance of thin film metal-insulator-metal (MIM) diodes is investigated for a variety of large and small electron affinity insulators using ultrasmooth amorphous metal as the bottom electrode. Nb2O5, Ta2O5, ZrO2, HfO2, Al2O3, and SiO2 amorphous insulators are deposited via atomic layer deposition (ALD). Reflection electron energy loss spectroscopy (REELS) is utilized to measure the band-gap energy (EG) and energy position of intrinsic sub-gap defect states for each insulator. EG of as-deposited ALD insulators are found to be Nb2O5 = 3.8 eV, Ta2O5 = 4.4 eV, ZrO2 = 5.4 eV, HfO2 = 5.6 eV, Al2O3 = 6.4 eV, and SiO2 = 8.8 eV with uncertainty of ±0.2 eV. Current vs. voltage asymmetry, non-linearity, turn-on voltage, and dominant conduction mechanisms are compared. Al2O3 and SiO2 are found to operate based on Fowler-Nordheim tunneling. Al2O3 shows the highest asymmetry. ZrO2, Nb2O5, and Ta2O5 based diodes are found to be dominated by Frenkel-Poole emission at large biases and exhibit lower asymmetry. The electrically estimated trap energy levels for defects that dominate Frenkel-Poole conduction are found to be consistent with the energy levels of surface oxygen vacancy defects observed in REELS measurements. For HfO2, conduction is found to be a mix of trap assisted tunneling and Frenkel-Poole emission. Insulator selection criteria in regards to MIM diodes applications are discussed.

  12. Passive Collecting of Solar Radiation Energy using Transparent Thermal Insulators, Energetic Efficiency of Transparent Thermal Insulators

    Directory of Open Access Journals (Sweden)

    Smajo Sulejmanovic

    2014-11-01

    Full Text Available This paper explains passive collection of solar radiation energy using transparent thermal insulators. Transparent thermal insulators are transparent for sunlight, at the same time those are very good thermal insulators. Transparent thermal insulators can be placed instead of standard conventional thermal insulators and additionally transparent insulators can capture solar radiation, transform it into heat and save heat just as standard insulators. Using transparent insulators would lead to reduce in usage of fossil fuels and would help protection of an environment and reduce effects of global warming, etc.

  13. Dynamic Jahn-Teller effect in the parent insulating state of the molecular superconductor Cs₃C₆₀.

    Science.gov (United States)

    Klupp, Gyöngyi; Matus, Péter; Kamarás, Katalin; Ganin, Alexey Y; McLennan, Alec; Rosseinsky, Matthew J; Takabayashi, Yasuhiro; McDonald, Martin T; Prassides, Kosmas

    2012-06-19

    The 'expanded fulleride' Cs(3)C(60) is an antiferromagnetic insulator in its normal state and becomes a molecular superconductor with T(c) as high as 38 K under pressure. There is mounting evidence that superconductivity is not of the conventional BCS type and electron-electron interactions are essential for its explanation. Here we present evidence for the dynamic Jahn-Teller effect as the source of the dramatic change in electronic structure occurring during the transition from the metallic to the localized state. We apply infrared spectroscopy, which can detect subtle changes in the shape of the C(60)3- ion due to the Jahn-Teller distortion. The temperature dependence of the spectra in the insulating phase can be explained by the gradual transformation from two temperature-dependent solid-state conformers to a single one, typical and unique for Jahn-Teller systems. These results unequivocally establish the relevance of the dynamic Jahn-Teller effect to overcoming Hund's rule and forming a low-spin state, leading to a magnetic Mott-Jahn-Teller insulator.

  14. Dirac Fermions without bulk backscattering in rhombohedral topological insulators

    Science.gov (United States)

    Mera Acosta, Carlos; Lima, Matheus; Seixas, Leandro; da Silva, Antônio; Fazzio, Adalberto

    2015-03-01

    The realization of a spintronic device using topological insulators is not trivial, because there are inherent difficulties in achieving the surface transport regime. The majority of 3D topological insulators materials (3DTI) despite of support helical metallic surface states on an insulating bulk, forming topological Dirac fermions protected by the time-reversal symmetry, exhibit electronic scattering channels due to the presence of residual continuous bulk states near the Dirac-point. From ab initio calculations, we studied the microscopic origin of the continuous bulk states in rhombohedral topological insulators materials with the space group D3d 5 (R 3 m) , showing that it is possible to understand the emergence of residual continuous bulk states near the Dirac-point into a six bands effective model, where the breaking of the R3 symmetry beyond the Γ point has an important role in the hybridization of the px, py and pz atomic orbitals. Within these model, the mechanisms known to eliminate the bulk scattering, for instance: the stacking faults (SF), electric field and alloy, generated the similar effect in the effective states of the 3DTI. Finally, we show how the surface electronic transport is modified by perturbations of bulk with SF. We would like to thank the financial support by Fundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP).

  15. Oferta de forragem de capim-elefante anão 'Mott' e o rendimento animal

    Directory of Open Access Journals (Sweden)

    Almeida Edison Xavier de

    2000-01-01

    Full Text Available A pesquisa foi realizada durante as estações de crescimento de 1994/95 e 1995/96 (out./abr., na Estação Experimental de Ituporanga/EPAGRI - SC, objetivando determinar o potencial de produção animal e as respostas em termos de taxa de acúmulo de matéria seca (MS e qualidade de forragem e estrutura do perfil de uma pastagem de capim-elefante anão `Mott' (CEAM submetida a quatro níveis de oferta de forragem (OF. Os níveis reais de FO foram 3,8; 7,5; 10,2 e 14,0 kg de MS de lâminas verdes (MSLV/100 kg de PV/dia, num delineamento em blocos casualizados completos com duas repetições e três novilhos (8 a 10 meses por potreiro, sob pastejo contínuo e uso da técnica "put-and-take". As OF determinaram resíduos médios de MSLV (RMSLV de 722; 1537; 2332; e 2542 kg/ha, respectivamente. Ofertas de forragem crescentes condicionaram acréscimos na taxa de acúmulo de MSLV/ha/dia e na densidade da forragem. A OF de 11,3 kg de MSLV/100 kg de PV/dia (RMSLV de 2200 kg/ha maximiza o desempenho animal com 1,06 kg/dia de ganho médio diário e assegura ganho/ha de 5,6 kg/dia, em condição de sustentabilidade da pastagem de CEAM, em pastejo contínuo.

  16. Enhanced rectifying response from metal-insulator-insulator-metal junctions

    Science.gov (United States)

    Maraghechi, P.; Foroughi-Abari, A.; Cadien, K.; Elezzabi, A. Y.

    2011-12-01

    We present on a metal-insulator-insulator-metal quantum electronic tunneling devices suitable for high speed rectifiers. Through the introduction of double oxide layer between similar metallic electrodes, a cascaded potential barrier is formed which alters the electron tunneling mechanism at forward versus the reverse bias. The cascaded potential barrier engineering manifests itself in both a highly nonlinear and asymmetric I-V junction characteristic. It is envisioned that high speed rectifiers and mixers having extraordinary nonlinearity can be realized through the incorporation of the cascaded potential barrier architecture and dissimilar metallic electrodes.

  17. EFFECT OF MOLASSES AND CORN AS SILAGE ADDITIVES ON THE CHARACTERISTICS OF MOTT DWARF ELEPHANT GRASS SILAGE AT DIFFERENT FERMENTATION PERIODS

    Directory of Open Access Journals (Sweden)

    M. QAMAR BILAL

    2009-02-01

    Full Text Available The aim of the present study was to determine the best stage of cut and to enhance the quality of mott grass silage by the addition of additives. For this purpose, mott grass was obtained at 45 and 60 days of its re-growth, chopped with an average particle length of ½ inches and filled in plastic boxes by mixing two additives (molasses and corn, @ 0, 1, 3 and 5% of the forage dry matter (DM, with three replicates each. In this way, 72 silos for each stage of cut were prepared and kept at room temperature. Three silos of each treatment were opened at each fermentation period (30, 35 and 40 days for determination of pH and lactic acid contents. The results indicated that mott grass cut at 45 days of its regrowth was the best to harvest maximum nutrients. The addition of molasses @ 3% was found to be the best at 35 days fermentation period. The pH decreased and lactic acid increased with level of additives and fermentation periods. Dry matter and crude protein contents increased to some extent. However, silage without additives showed the highest pH and low lactic acid, indicating the poor quality silage. Similarly, a loss in DM and crude protein was observed in mott grass ensiled without additives. It was concluded that the use of additives such as molasses @ 3% fodder DM is imperative to make quality mott grass silage.

  18. Spinon Fermi surface U (1 ) spin liquid in the spin-orbit-coupled triangular-lattice Mott insulator YbMgGaO4

    Science.gov (United States)

    Li, Yao-Dong; Lu, Yuan-Ming; Chen, Gang

    2017-08-01

    Motivated by the recent progress in the spin-orbit-coupled triangular lattice spin liquid candidate YbMgGaO4, we carry out a systematic projective symmetry group analysis and mean-field study of candidate U (1 ) spin-liquid ground states. Due to the spin-orbital entanglement of the Yb moments, the space-group symmetry operation transforms both the position and the orientation of the local moments, and hence it brings different features for the projective realization of the lattice symmetries from the cases with spin-only moments. Among the eight U (1 ) spin liquids that we find with the fermionic parton construction, only one spin-liquid state, which was proposed and analyzed by Yao Shen et al. [Nature (London) 540, 559 (2016), 10.1038/nature20614] and labeled as U1A00 in the present work, stands out and gives a large spinon Fermi surface and provides a consistent explanation for the spectroscopic results in YbMgGaO4. Further connection of this spinon Fermi surface U (1 ) spin liquid with YbMgGaO4 and the future directions are discussed. Finally, our results may apply to other spin-orbit-coupled triangular lattice spin-liquid candidates, and more broadly, our general approach can be well extended to spin-orbit-coupled spin-liquid candidate materials.

  19. Effect of Zn doping on the magneto-caloric effect and critical constants of Mott insulator MnV2O4

    Directory of Open Access Journals (Sweden)

    Prashant Shahi

    2014-09-01

    Full Text Available X-ray absorption near edge spectra (XANES and magnetization of Zn doped MnV2O4 have been measured and from the magnetic measurement the critical exponents and magnetocaloric effect have been estimated. The XANES study indicates that Zn doping does not change the valence states in Mn and V. It has been shown that the obtained values of critical exponents β, γ and δ do not belong to universal class and the values are in between the 3D Heisenberg model and the mean field interaction model. The magnetization data follow the scaling equation and collapse into two branches indicating that the calculated critical exponents and critical temperature are unambiguous and intrinsic to the system. All the samples show large magneto-caloric effect. The second peak in magneto-caloric curve of Mn0.95Zn0.05V2O4 is due to the strong coupling between orbital and spin degrees of freedom. But 10% Zn doping reduces the residual spins on the V-V pairs resulting the decrease of coupling between orbital and spin degrees of freedom.

  20. Effect of Zn doping on the magneto-caloric effect and critical constants of Mott insulator MnV2O4

    Science.gov (United States)

    Shahi, Prashant; Singh, Harishchandra; Kumar, A.; Shukla, K. K.; Ghosh, A. K.; Yadav, A. K.; Nigam, A. K.; Chatterjee, Sandip

    2014-09-01

    X-ray absorption near edge spectra (XANES) and magnetization of Zn doped MnV2O4 have been measured and from the magnetic measurement the critical exponents and magnetocaloric effect have been estimated. The XANES study indicates that Zn doping does not change the valence states in Mn and V. It has been shown that the obtained values of critical exponents β, γ and δ do not belong to universal class and the values are in between the 3D Heisenberg model and the mean field interaction model. The magnetization data follow the scaling equation and collapse into two branches indicating that the calculated critical exponents and critical temperature are unambiguous and intrinsic to the system. All the samples show large magneto-caloric effect. The second peak in magneto-caloric curve of Mn0.95Zn0.05V2O4 is due to the strong coupling between orbital and spin degrees of freedom. But 10% Zn doping reduces the residual spins on the V-V pairs resulting the decrease of coupling between orbital and spin degrees of freedom.

  1. Effect of Zn doping on the magneto-caloric effect and critical constants of Mott insulator MnV{sub 2}O{sub 4}

    Energy Technology Data Exchange (ETDEWEB)

    Shahi, Prashant; Kumar, A.; Shukla, K. K.; Chatterjee, Sandip, E-mail: schatterji.app@iitbhu.ac.in [Department of Applied Physics, Indian Institute of Technology (Banaras Hindu University), Varanasi-221005 (India); Singh, Harishchandra [Indus Synchrotron Utilization Division, Raja Ramanna Centre for Advanced Technology, Indore - 452013 (India); Ghosh, A. K. [Department of Physics, Banaras Hindu University, Varanasi-221005 (India); Yadav, A. K. [Atomic and Molecular Physics Division, Bhabha Atomic Research Centre, Mumbai – 400 094 (India); Nigam, A. K. [Department of CMP and MS, Tata Institute of Fundamental Research, Mumbai-400005 (India)

    2014-09-15

    X-ray absorption near edge spectra (XANES) and magnetization of Zn doped MnV{sub 2}O{sub 4} have been measured and from the magnetic measurement the critical exponents and magnetocaloric effect have been estimated. The XANES study indicates that Zn doping does not change the valence states in Mn and V. It has been shown that the obtained values of critical exponents β, γ and δ do not belong to universal class and the values are in between the 3D Heisenberg model and the mean field interaction model. The magnetization data follow the scaling equation and collapse into two branches indicating that the calculated critical exponents and critical temperature are unambiguous and intrinsic to the system. All the samples show large magneto-caloric effect. The second peak in magneto-caloric curve of Mn{sub 0.95}Zn{sub 0.05}V{sub 2}O{sub 4} is due to the strong coupling between orbital and spin degrees of freedom. But 10% Zn doping reduces the residual spins on the V-V pairs resulting the decrease of coupling between orbital and spin degrees of freedom.

  2. Topological insulators and topological superconductors

    CERN Document Server

    Bernevig, Andrei B

    2013-01-01

    This graduate-level textbook is the first pedagogical synthesis of the field of topological insulators and superconductors, one of the most exciting areas of research in condensed matter physics. Presenting the latest developments, while providing all the calculations necessary for a self-contained and complete description of the discipline, it is ideal for graduate students and researchers preparing to work in this area, and it will be an essential reference both within and outside the classroom. The book begins with simple concepts such as Berry phases, Dirac fermions, Hall conductance and its link to topology, and the Hofstadter problem of lattice electrons in a magnetic field. It moves on to explain topological phases of matter such as Chern insulators, two- and three-dimensional topological insulators, and Majorana p-wave wires. Additionally, the book covers zero modes on vortices in topological superconductors, time-reversal topological superconductors, and topological responses/field theory and topolo...

  3. Atomic physics

    CERN Document Server

    Born, Max

    1989-01-01

    The Nobel Laureate's brilliant exposition of the kinetic theory of gases, elementary particles, the nuclear atom, wave-corpuscles, atomic structure and spectral lines, electron spin and Pauli's principle, quantum statistics, molecular structure and nuclear physics. Over 40 appendices, a bibliography, numerous figures and graphs.

  4. Atomic Calligraphy

    Science.gov (United States)

    Imboden, Matthias; Pardo, Flavio; Bolle, Cristian; Han, Han; Tareen, Ammar; Chang, Jackson; Christopher, Jason; Corman, Benjamin; Bishop, David

    2013-03-01

    Here we present a MEMS based method to fabricate devices with a small number of atoms. In standard semiconductor fabrication, a large amount of material is deposited, after which etching removes what is not wanted. This technique breaks down for structures that approach the single atom limit, as it is inconceivable to etch away all but one atom. What is needed is a bottom up method with single or near single atom precision. We demonstrate a MEMS device that enables nanometer position controlled deposition of gold atoms. A digitally driven plate is swept as a flux of gold atoms passes through an aperture. Appling voltages on four comb capacitors connected to the central plate by tethers enable nanometer lateral precision in the xy plane over 15x15 sq. microns. Typical MEMS structures have manufacturing resolutions on the order of a micron. Using a FIB it is possible to mill apertures as small as 10 nm in diameter. Assuming a low incident atomic flux, as well as an integrated MEMS based shutter with microsecond response time, it becomes possible to deposit single atoms. Due to their small size and low power consumption, such nano-printers can be mounted directly in a cryogenic system at ultrahigh vacuum to deposit clean quench condensed metallic structures.

  5. Demonstration of Microsphere Insulation in Cryogenic Vessels

    Science.gov (United States)

    Baumgartner, R. G.; Myers, E. A.; Fesmire, J. E.; Morris, D. L.; Sokalski, E. R.

    2006-04-01

    While microspheres have been recognized as a legitimate insulation material for decades, actual use in full-scale cryogenic storage tanks has not been demonstrated until now. The performance and life-cycle-cost advantages previously predicted have now been proven. Most bulk cryogenic storage tanks are insulated with either multilayer insulation (MLI) or perlite. Microsphere insulation, consisting of hollow glass bubbles, combines in a single material the desirable properties that other insulations only have individually. The material has high crush strength, low density, is noncombustible, and performs well in soft vacuum. These properties were proven during recent field testing of two 22,700-L (6,000-gallon) liquid nitrogen tanks, one insulated with microsphere insulation and the other with perlite. Normal evaporation rates (NER) for both tanks were monitored with precision test equipment and insulation levels within the tanks were observed through view ports as an indication of insulation compaction. Specific industrial applications were evaluated based on the test results and beneficial properties of microsphere insulation. Over-the-road trailers previously insulated with perlite will benefit not only from the reduced heat leak, but also the reduced mass of microsphere insulation. Economic assessments for microsphere-insulated cryogenic vessels including life-cycle cost are also presented.

  6. Better and cheaper extra insulation

    DEFF Research Database (Denmark)

    Rudbeck, Claus Christian

    1998-01-01

    of buildings. The thermal performance of the systems is compared to an ideal situation, showing that there is still a potential of further savings by improving the design of the insulation systems.To improve the thermal performance of the systems a number of product developments are proposed.......In the current energy plan, focus in placed on further savings of heat in buildings. If the target of the energy plan should be achieved, there is a need for saving heat both in new and existing buildings.The article investigate and compare the properties of several systems for external insulation...

  7. Better and cheaper extra insulation

    DEFF Research Database (Denmark)

    Rudbeck, Claus Christian

    1998-01-01

    In the current energy plan, focus in placed on further savings of heat in buildings. If the target of the energy plan should be achieved, there is a need for saving heat both in new and existing buildings.The article investigate and compare the properties of several systems for external insulation...... of buildings. The thermal performance of the systems is compared to an ideal situation, showing that there is still a potential of further savings by improving the design of the insulation systems.To improve the thermal performance of the systems a number of product developments are proposed....

  8. Topological insulators fundamentals and perspectives

    CERN Document Server

    Ortmann, Frank; Valenzuela, Sergio O

    2015-01-01

    There are only few discoveries and new technologies in physical sciences that have the potential to dramatically alter and revolutionize our electronic world. Topological insulators are one of them. The present book for the first time provides a full overview and in-depth knowledge about this hot topic in materials science and condensed matter physics. Techniques such as angle-resolved photoemission spectrometry (ARPES), advanced solid-state Nuclear Magnetic Resonance (NMR) or scanning-tunnel microscopy (STM) together with key principles of topological insulators such as spin-locked electronic

  9. Inversion-symmetric topological insulators

    Science.gov (United States)

    Hughes, Taylor L.; Prodan, Emil; Bernevig, B. Andrei

    2011-06-01

    We analyze translationally invariant insulators with inversion symmetry that fall outside the current established classification of topological insulators. These insulators exhibit no edge or surface modes in the energy spectrum and hence they are not edge metals when the Fermi level is in the bulk gap. However, they do exhibit protected modes in the entanglement spectrum localized on the cut between two entangled regions. Their entanglement entropy cannot be made to vanish adiabatically, and hence the insulators can be called topological. There is a direct connection between the inversion eigenvalues of the Hamiltonian band structure and the midgap states in the entanglement spectrum. The classification of protected entanglement levels is given by an integer N, which is the difference between the negative inversion eigenvalues at inversion symmetric points in the Brillouin zone, taken in sets of 2. When the Hamiltonian describes a Chern insulator or a nontrivial time-reversal invariant topological insulator, the entirety of the entanglement spectrum exhibits spectral flow. If the Chern number is zero for the former, or time reversal is broken in the latter, the entanglement spectrum does not have spectral flow, but, depending on the inversion eigenvalues, can still exhibit protected midgap bands similar to impurity bands in normal semiconductors. Although spectral flow is broken (implying the absence of real edge or surface modes in the original Hamiltonian), the midgap entanglement bands cannot be adiabatically removed, and the insulator is “topological.” We analyze the linear response of these insulators and provide proofs and examples of when the inversion eigenvalues determine a nontrivial charge polarization, a quantum Hall effect, an anisotropic three-dimensional (3D) quantum Hall effect, or a magnetoelectric polarization. In one dimension, we establish a link between the product of the inversion eigenvalues of all occupied bands at all inversion

  10. Thermoelectric power of Kondo insulators

    OpenAIRE

    佐宗, 哲郎

    2002-01-01

    Thermoelectric power (TEP) of the Kondo insulators is investigated theoretically within the framework of the dynamical mean field theory. It is found that the temperature dependence of the Seebeck coefficient changes from the ordinary behavior S(T) ∝ T−1 in semiconductors to S ∝ T at low temperatures due to the finite imaginary part of the electron self-energy in the Kondo insulators with strong correlation. Realistic models for YbB12 and FeSi based on the band calculations are also studied....

  11. Unconventional spin texture in a noncentrosymmetric quantum spin Hall insulator

    Science.gov (United States)

    Mera Acosta, C.; Babilonia, O.; Abdalla, L.; Fazzio, A.

    2016-07-01

    We propose that the simultaneous presence of both Rashba and band inversion can lead to a Rashba-like spin splitting formed by two bands with the same in-plane helical spin texture. Because of this unconventional spin texture, the backscattering is forbidden in edge and bulk conductivity channels. We propose a noncentrosymmetric honeycomb-lattice quantum spin Hall (QSH) insulator family formed by the IV, V, and VII elements with this property. The system formed by Bi, Pb, and I atoms is mechanically stable and has both a large Rashba spin splitting of 60 meV and a large nontrivial band gap of 0.14 eV. Since the edge and the bulk states are protected by the time-reversal (TR) symmetry, contrary to what happens in most doped QSH insulators, the bulk states do not contribute to the backscattering in the electronic transport, allowing the construction of a spintronic device with less energy loss.

  12. Partial Model of Insulator/Insulator Contact Charging

    Science.gov (United States)

    Hogue, Michael; Calle, C. I.; Buhler, C. R.; Mucciolo, E. R.

    2005-01-01

    Two papers present a two-phase equilibrium model that partly explains insulator/ insulator contact charging. In this model, a vapor of ions within a gas is in equilibrium with a submonolayer of ions of the same species that have been adsorbed on the surface of an insulator. The surface is modeled as having localized states, each with a certain energy of adsorption for an ion. In an earlier version of the model described in the first paper, the ions do not interact with each other. Using the grand canonical ensemble, the chemical potentials of both vapor and absorbed phases are derived and equated to determine the vapor pressure. If a charge is assigned to the vapor particles (in particular, if single ionization is assumed), then the surface charge density associated with adsorbed ions can be calculated as a function of pressure. In a later version of the model presented in the second paper, the submodel of the vapor phase is extended to include electrostatic interactions between vapor ions and adsorbed ones as well as the screening effect, at a given distance from the surface, of ions closer to the surface. Theoretical values of this model closely match preliminary experimental data on the discharge of insulators as a function of pressure.

  13. Experimental Realizations of Magnetic Topological Insulator and Topological Crystalline Insulator

    Science.gov (United States)

    Xu, Suyang

    2013-03-01

    Over the past few years the experimental research on three-dimensional topological insulators have emerged as one of the most rapidly developing fields in condensed matter physics. In this talk, we report on two new developments in the field: The first part is on the dynamic interplay between ferromagnetism and the Z2 topological insulator state (leading to a magnetic topological insulator). We present our spin-resolved photoemission and magnetic dichroic experiments on MBE grown films where a hedgehog-like spin texture is revealed on the magnetically ordered surface of Mn-Bi2Se3 revealing a Berry's phase gradient in energy-momentum space of the crystal. A chemically/electrically tunable Berry's phase switch is further demonstrated via the tuning of the spin groundstate in Mn-Bi2Se3 revealed in our data (Nature Physics 8, 616 (2012)). The second part of this talk describes our experimental observation of a new topological phase of matter, namely a topological crystalline insulator where space group symmetries replace the role of time-reversal symmetry in an otherwise Z2 topological insulator predicted in theory. We experimentally investigate the possibility of a mirror symmetry protected topological phase transition in the Pb1-xSnxTe alloy system, which has long been known to contain an even number of band inversions based on band theory. Our experimental results show that at a composition below the theoretically predicted band inversion, the system is fully gapped, whereas in the band-inverted regime, the surface exhibits even number of spin-polarized Dirac cone states revealing mirror-protected topological order (Nature Communications 3, 1192 (2012)) distinct from that observed in Z2 topological insulators. We discuss future experimental possibilities opened up by these new developments in topological insulators research. This work is in collaboration with M. Neupane, C. Liu, N. Alidoust, I. Belopolski, D. Qian, D.M. Zhang, A. Richardella, A. Marcinkova, Q

  14. Insulating method using cataphoretic paint for tungsten tips for electrochemical scanning tunnelling microscopy (ECSTM)

    Science.gov (United States)

    Zhu, L.; Claude-Montigny, B.; Gattrell, M.

    2005-12-01

    A new tip insulating process for active metal tips allowing atomic resolution ECSTM imaging has been developed. This new method using cathodic cataphoretic paint deposition has been tested successfully. The insulating deposited film appears homogeneous under optical microscopy and it has been characterised by infra red and SEM analysis. The depositing layer of the paint is sufficiently dense to effectively resist electrolyte ion penetration and resists corrosion in various acidic, basic aqueous or non-aqueous media. The coating film does not reduce the imaging capability of the ECSTM even to atomic resolution. This new insulating method adds to the approaches available to those preparing tips for ECSTM. This approach would also be of great utility for the preparation of microelectrodes using active metals.

  15. Associating Specific Materials with Topological Insulation Behavior

    Science.gov (United States)

    Zhang, Xiuwen

    2014-03-01

    The first-principles (a) total-energy/stability calculations combined with (b) electronic structure calculations of band inversion, spin-polarization and topological invariants (Z2) has led to the design and prediction of specific materials that are topological insulators in this study. We classify bulk materials into four types of band-inversion behaviors (TI-1, TI-2, BI-3, BI-4), based on the number of band inversions and their distributions on various time reversal invariant k points. Depending on the inversion type in bulk, the corresponding surface states have different protections e.g., protected by time reversal symmetry (in TI-1 materials), spatial symmetry (in TI-2), or not protected (in BI-3, BI-4). Subject 1 Discovery of new TI by screening materials for a Z2 metric: Such high-throughput search in the framework of Inverse Design methodology predicts a few previously undocumented materials that are TI-1 in their ground state crystal structure. We also predict dozens of materials that are TI-1 however in structures that are not ground states (e.g. perovskite structure of II-Bi-O3). Subject 2 Design Principle to increase the gap of TI-1 materials: In HgTe-like cubic topological materials, the insulating gap is zero since the spin-orbit splitting is positive and so a 4-fold half-filled p-like band is near the Fermi level. By design of hybridization of d-orbitals into the p-like bands, one can create negative spin-orbit splitting and so a finite insulating gap. Subject 3 Unconventional spin textures of TI surface states: Despite the fact that one of our predicted TI-1 KBaBi has inversion symmetry in the bulk-a fact that that would preclude bulk spin polarization-we find a Dresselhaus-like spin texture with non-helical spin texture. This originates from the local spin polarization, anchored on the atomic sites with inversion asymmetric point groups, that is compensated due to global inversion symmetry in bulk. In collaboration with: Jun-Wei Luo, Qihang Liu

  16. Entropy production and thermalization in the one-atom maser

    Science.gov (United States)

    Solano-Carrillo, E.

    2016-12-01

    In the configuration in which two-level atoms with an initial thermal distribution of their states are sent in succession to a cavity sustaining a single mode of electromagnetic radiation, one atom leaving the cavity as the next one enters it (as in the one-atom maser), Jaynes and Cummings showed that the steady state of the field, when many atoms have traversed the cavity, is thermal with a temperature different than that of the atoms in the off-resonant situation. Having an interaction between two subsystems which maintains them at different temperatures was then understood as leading to an apparent violation of energy conservation. Here we show, by calculating the quantum entropy production in the system, that this difference of temperatures is consistent with having the subsystems adiabatically insulated from each other as the steady state is approached. At resonance the insulation is removed and equilibration of the temperatures is achieved.

  17. Team for Research on Topological Insulators

    Institute of Scientific and Technical Information of China (English)

    2012-01-01

    The team led by Prof. FANG Zhong at the CAS Institute of Physics (lOP) was awarded for their breakthrough researches in the field of topological insulators. Topological insulator is a new state of quantum matter different from conventional insulators or metals, of which human beings know very little. The team, consisting of theoretical, computational and experimental experts,

  18. Technology sandwich panels with mineral wool insulation

    OpenAIRE

    Tyulenev M.; Burtzeva M.; Mednikova E.

    2016-01-01

    Sandwich panel — self–supporting structure consisting of metal cladding and thermal insulation core. As a heat–insulating core used mineral wool, foamed plastics. Production of sandwich panels with insulation mineral wool performed on modular lines for the production of aggregate or conveyer scheme. Sandwich panels are used as load–bearing elements of the facades, as well as a roof covering.

  19. Magnetically Insulated Opening Switch Research.

    Science.gov (United States)

    1987-01-01

    this research is to investigate the validity of the magneti- cally insulated opening switch concept proposed by Eninger (Ref. 5, Appendix 1). The...1973). 3. Y. Carmel, and J. Nation, Phys, Rev. Lett. 31, 286 (1973). 4. T.J. Orzechowski, and G. Bekefi, Phys. Fluids 19, 43 (1976). U 5. 3. Eninger

  20. Topological Insulators from Group Cohomology

    Science.gov (United States)

    Alexandradinata, A.; Wang, Zhijun; Bernevig, B. Andrei

    2016-04-01

    We classify insulators by generalized symmetries that combine space-time transformations with quasimomentum translations. Our group-cohomological classification generalizes the nonsymmorphic space groups, which extend point groups by real-space translations; i.e., nonsymmorphic symmetries unavoidably translate the spatial origin by a fraction of the lattice period. Here, we further extend nonsymmorphic groups by reciprocal translations, thus placing real and quasimomentum space on equal footing. We propose that group cohomology provides a symmetry-based classification of quasimomentum manifolds, which in turn determines the band topology. In this sense, cohomology underlies band topology. Our claim is exemplified by the first theory of time-reversal-invariant insulators with nonsymmorphic spatial symmetries. These insulators may be described as "piecewise topological," in the sense that subtopologies describe the different high-symmetry submanifolds of the Brillouin zone, and the various subtopologies must be pieced together to form a globally consistent topology. The subtopologies that we discover include a glide-symmetric analog of the quantum spin Hall effect, an hourglass-flow topology (exemplified by our recently proposed KHgSb material class), and quantized non-Abelian polarizations. Our cohomological classification results in an atypical bulk-boundary correspondence for our topological insulators.

  1. Topological Insulators from Group Cohomology

    Directory of Open Access Journals (Sweden)

    A. Alexandradinata

    2016-04-01

    Full Text Available We classify insulators by generalized symmetries that combine space-time transformations with quasimomentum translations. Our group-cohomological classification generalizes the nonsymmorphic space groups, which extend point groups by real-space translations; i.e., nonsymmorphic symmetries unavoidably translate the spatial origin by a fraction of the lattice period. Here, we further extend nonsymmorphic groups by reciprocal translations, thus placing real and quasimomentum space on equal footing. We propose that group cohomology provides a symmetry-based classification of quasimomentum manifolds, which in turn determines the band topology. In this sense, cohomology underlies band topology. Our claim is exemplified by the first theory of time-reversal-invariant insulators with nonsymmorphic spatial symmetries. These insulators may be described as “piecewise topological,” in the sense that subtopologies describe the different high-symmetry submanifolds of the Brillouin zone, and the various subtopologies must be pieced together to form a globally consistent topology. The subtopologies that we discover include a glide-symmetric analog of the quantum spin Hall effect, an hourglass-flow topology (exemplified by our recently proposed KHgSb material class, and quantized non-Abelian polarizations. Our cohomological classification results in an atypical bulk-boundary correspondence for our topological insulators.

  2. Thermal Insulation from Hardwood Residues

    Science.gov (United States)

    Sable, I.; Grinfelds, U.; Vikele, L.; Rozenberga, L.; Zeps, M.; Luguza, S.

    2015-11-01

    Adequate heat is one of the prerequisites for human wellbeing; therefore, building insulation is required in places where the outside temperature is not suitable for living. The climate change, with its rising temperatures and longer dry periods, promotes enlargement of the regions with conditions more convenient for hardwood species than for softwood species. Birch (Betula pendula) is the most common hardwood species in Latvia. The aim of this work was to obtain birch fibres from wood residues of plywood production and to form low-density thermal insulation boards. Board formation and production was done in the presence of water; natural binder, fire retardant and fungicide were added in different concentrations. Board properties such as density, transportability or resistance to particulate loss, thermal conductivity and reaction to fire were investigated. This study included thermal insulation boards with the density of 102-120 kg/m3; a strong correlation between density and the binder amount was found. Transportability also improved with the addition of a binder, and 0.1-0.5% of the binder was the most appropriate amount for this purpose. The measured thermal conductivity was in the range of 0.040-0.043 W/(m·K). Fire resistance increased with adding the fire retardant. We concluded that birch fibres are applicable for thermal insulation board production, and it is possible to diversify board properties, changing the amount of different additives.

  3. Atomic and electronic structure of the (2√(3)×2√(3))R30° strained Sn reconstruction on Ge/Si(1 1 1)

    Energy Technology Data Exchange (ETDEWEB)

    Srour, W. [Université de Lorraine, UMR CNRS 7198, Institut Jean Lamour, BP 70239, F-54506 Vandoeuvre-lès-Nancy (France); Synchrotron SOLEIL, L’Orme des Merisiers, Saint-Aubin, 91192 Gif sur Yvette (France); Tejeda, A., E-mail: antonio.tejeda@u-psud.fr [Laboratoire de Physique des Solides, Université Paris-Sud, CNRS, UMR 8502, F-91405 Orsay (France); Stoffel, M. [Université de Lorraine, UMR CNRS 7198, Institut Jean Lamour, BP 70239, F-54506 Vandoeuvre-lès-Nancy (France); Abuín, M. [Dto. de Física de Materiales, Universidad Complutense de Madrid, 28040 Madrid (Spain); Fagot-Revurat, Y. [Université de Lorraine, UMR CNRS 7198, Institut Jean Lamour, BP 70239, F-54506 Vandoeuvre-lès-Nancy (France); Fèvre, P. Le [Synchrotron SOLEIL, L’Orme des Merisiers, Saint-Aubin, 91192 Gif sur Yvette (France); Taleb-Ibrahimi, A. [UR1 CNRS/Synchrotron SOLEIL, Saint-Aubin, 91192 Gif sur Yvette (France); Malterre, D. [Université de Lorraine, UMR CNRS 7198, Institut Jean Lamour, BP 70239, F-54506 Vandoeuvre-lès-Nancy (France)

    2014-08-15

    Highlights: • We find a new Sn reconstruction on strained Ge/Si(1 1 1). • Its coverage differs from that of Sn/Si(1 1 1) and Sn/Ge(1 1 1) exhibiting Mott phases. • The band structure reveals it is a band insulator. - Abstract: Motivated by the different behaviour of Sn/Si(1 1 1) and Sn/Ge(1 1 1) in their metal-insulator transition, we have explored the possibility of growing Sn on an ultra-thin Ge layer strained on top of a Si(1 1 1) substrate. We have demonstrated by scanning tunneling microscopy and low energy electron diffraction that a (2√(3)×2√(3))R30° reconstruction can be stabilized under adequate growth conditions. The size of the reconstructed domains increases progressively up to a coverage of 1.3 monolayer of Sn, as determined by a combined study of scanning tunneling microscopy and core level spectroscopy. This coverage differs from that of Sn/Si(1 1 1) and Sn/Ge(1 1 1) exhibiting Mott phases. Angle resolved photoemission shows that the highly strained reconstruction is a band insulator, with a surface state dispersing roughly between 1300 and 2300 meV of binding energy.

  4. Kinetic Atom.

    Science.gov (United States)

    Wilson, David B.

    1981-01-01

    Surveys the research of scientists like Joule, Kelvin, Maxwell, Clausius, and Boltzmann as it comments on the basic conceptual issues involved in the development of a more precise kinetic theory and the idea of a kinetic atom. (Author/SK)

  5. Optical Spectroscopy of Strongly Correlated (MOTT-HUBBARD, Heavy-Fermion, Unconventional Superconductor) Materials Tuned Pressure

    Energy Technology Data Exchange (ETDEWEB)

    Goncharov, A; Struzhkin, V V

    2003-11-12

    During the past years, the Co-PI's have been responsible for the development and operation of optical techniques (Raman, IR, fluorescence, absorption and reflectance spectroscopy at ultrahigh pressures and high and low temperatures) which have proven to be extremely powerful for studying low-Z, molecular solids including hydrogen, ice, etc. (see results below). Meanwhile, it has become increasingly clear that optical spectroscopy has an equally extraordinary potential for studying metals and superconductors at ultrahigh pressures, thus the result will have a major impact on material research. However, because of the extreme difference in optical properties of opaque metals and transparent insulating molecular solids, successful accomplishment of the present project will require substantial effort in improving the present equipment and developing new techniques, and funds for this are requested here. Below we provide a short description of the work done and techniques developed during the last years. We also propose to explore new frontiers in compressed materials close to the insulator-metal boundaries, spin-crossover, and other quantum critical points.

  6. Insulation materials for advanced water storages

    DEFF Research Database (Denmark)

    Schultz, Jørgen Munthe

    2005-01-01

    This chapter gives an overview of different insulation materials that may be of interest for insulation of solar storage tanks. In order to understand the special characteristics of the different insulation materials the heat transfer mechanisms involved are shortly described. In the following...... sections different insulation materials are described with respect to material characteristics and some comments on the easiness of application for tank insulation. The material properties listed in this paper are typical values, which gives an idea of the possibilities but in case of a specific design...

  7. Insulation materials for advanced water storages

    DEFF Research Database (Denmark)

    Schultz, Jørgen Munthe

    2005-01-01

    This chapter gives an overview of different insulation materials that may be of interest for insulation of solar storage tanks. In order to understand the special characteristics of the different insulation materials the heat transfer mechanisms involved are shortly described. In the following...... sections different insulation materials are described with respect to material characteristics and some comments on the easiness of application for tank insulation. The material properties listed in this paper are typical values, which gives an idea of the possibilities but in case of a specific design...

  8. Designing in-plane heterostructures of quantum spin Hall insulators from first principles: 1T'-MoS2 with adsorbates

    DEFF Research Database (Denmark)

    Olsen, Thomas

    2016-01-01

    Interfaces between normal and topological insulators are bound to host metallic states that are protected by time-reversal symmetry and are therefore robust against disorder and interface reconstruction. Two-dimensional topological insulators (quantum spin Hall insulators) offer a unique...... opportunity to change the local topology by adsorption of atoms or molecules and thus comprise an ideal platform for designing topological heterostructures. Here we apply first-principles calculations to show that the quantum spin Hall insulator 1T'-MoS2 exhibits a phase transition to a trivial insulator upon...... adsorption of various atoms. It is then demonstrated that one-dimensional metallic states indeed arise at the boundary of regions with and without adsorbed oxygen and that these boundary states generically constitute simple linear connections between valence and conduction bands in reciprocal space...

  9. On beer, brewing and better thermal insulation

    Energy Technology Data Exchange (ETDEWEB)

    Den Herder, P.W.

    1989-01-01

    The art of brewing goes back to very ancient times. Though little has changed in the actual brewing process, the technical equipment has been improved considerably. Cooling the brew, gives also a need for thermal insulation. In the beginning cork has been used as an thermal insulation material, followed by cellular plastic foam and fibrous insulants in the past 30 years. All these materials gradually absorb water, caused by the phenomena that water vapour in the air tends to go into the direction of the cold pipe surface. In practice it appeared to be impossible to make the above insulation materials vapourtight. Water vapour will condensate in the insulation material into water. Water being the greatest enemy of insulation material. Cellular glass insulation, well-known in the petro-chemical industry, has proven to be 100% vapourtight, so an excellent choice for cold piping and equipment. 5 figs.

  10. Doping Scheme in Atomic Chain Electronics

    Science.gov (United States)

    Toshishige, Yamada

    1997-01-01

    Due to the dramatic reduction in MOS size, there appear many unwanted effects. In these small devices, the number of dopant atoms in the channel is not macroscopic and electrons may suffer significantly different scattering from device to device since the spatial distribution of dopant atoms is no longer regarded as continuous. This prohibits integration, while it is impossible to control such dopant positions within atomic scale. A fundamental solution is to create electronics with simple but atomically precise structures, which could be fabricated with recent atom manipulation technology. All the constituent atoms are placed as planned, and then the device characteristics are deviation-free, which is mandatory for integration. Atomic chain electronics belongs to this category. Foreign atom chains or arrays form devices, and they are placed on the atomically flat substrate surface. We can design the band structure and the resultant Fermi energy of these structures by manipulating the lattice constant. Using the tight-binding theory with universal parameters, it has been predicted that isolated Si chains and arrays are metallic, Mg chains are insulating, and Mg arrays have metallic and insulating phases [1]. The transport properties along a metallic chain have been studied, emphasizing the role of the contact to electrodes [2]. For electronic applications, it is essential to establish a method to dope a semiconducting chain, which is to control the Fermi energy position without altering the original band structure. If we replace some of the chain atoms with dopant atoms randomly, the electrons will see random potential along die chain and will be localized strongly in space (Anderson localization). However, if we replace periodically, although the electrons can spread over the chain, there will generally appear new bands and band gaps reflecting the new periodicity of dopant atoms. This will change the original band structure significantly. In order to overcome

  11. Origin of Transitions between Metallic and Insulating States in Simple Metals

    Science.gov (United States)

    Naumov, Ivan I.; Hemley, Russell J.

    2015-04-01

    Unifying principles that underlie recently discovered transitions between metallic and insulating states in elemental solids under pressure are developed. Using group theory arguments and first-principles calculations, we show that the electronic properties of the phases involved in these transitions are controlled by symmetry principles. The valence bands in these systems are described by simple and composite band representations constructed from localized Wannier functions centered on points unoccupied by atoms, and which are not necessarily all symmetrical. The character of the Wannier functions is closely related to the degree of s -p (-d ) hybridization and reflects multicenter chemical bonding in these insulating states. The conditions under which an insulating state is allowed for structures having an integer number of atoms per primitive unit cell as well as reentrant (i.e., metal-insulator-metal) transition sequences are detailed, resulting in predictions of behavior such as phases having band-contact lines. The general principles developed are tested and applied to the alkali and alkaline earth metals, including elements where high-pressure insulating phases have been reported (e.g., Li, Na, and Ca).

  12. A review of magnetic insulation

    Directory of Open Access Journals (Sweden)

    Zósimo Arévalo Velosa

    2010-04-01

    Full Text Available High energy devices are designed to work with extremely high electric and magnetic fields. As a consequence, these devices show non-linear phenomena and behaviour, such as magnetic insulation which alters electron trajectory. A mathematical analysis and review of magnetic insulation were carried out as a consequence of non-linearity to find frontier conditions and solutions to the problem. This paper was aimed at presenting the topic in a way which is easier for that part of the academic community which is unfamiliar with it to understand it. The paper gives a description of the phenomena developed by high electric and magnetic fields in a vacuum plane diode, some equations modelling the phenomenon, proves its existence and finds positive solutions based on upper and lower solutions for boundary limit problems and gives some practical applications.

  13. Magnetically insulated transmission line oscillator

    Energy Technology Data Exchange (ETDEWEB)

    Bacon, Larry D. (Albuquerque, NM); Ballard, William P. (Albuquerque, NM); Clark, M. Collins (Albuquerque, NM); Marder, Barry M. (Albuquerque, NM)

    1988-01-01

    A magnetically insulated transmission line oscillator employs self-generated magnetic fields to generate microwave energy. An anode of the oscillator includes slow-wave structures which are formed of a plurality of thin conductive vanes defining cavities therebetween, and a gap is formed between the anode and a cathode of the oscillator. In response to a pulsed voltage applied to the anode and cathode, self-generated magnetic fields arfe produced in a cross-field orientation with respect to the orientation of the electric field between the anode and the cathode. The cross-field magnetic fields insulate the flow of electrons in the gap and confine the flow of electrons within the gap.

  14. Flexible pile thermal barrier insulator

    Science.gov (United States)

    Anderson, G. E.; Fell, D. M.; Tesinsky, J. S. (Inventor)

    1978-01-01

    A flexible pile thermal barrier insulator included a plurality of upstanding pile yarns. A generally planar backing section supported the upstanding pile yarns. The backing section included a plurality of filler yarns forming a mesh in a first direction. A plurality of warp yarns were looped around said filler yarns and pile yarns in the backing section and formed a mesh in a second direction. A binder prevented separation of the yarns in the backing section.

  15. Interaction-induced insulating state in thick multilayer graphene

    Science.gov (United States)

    Nam, Youngwoo; Ki, Dong-Keun; Koshino, Mikito; McCann, Edward; Morpurgo, Alberto F.

    2016-12-01

    Close to charge neutrality, the low-energy properties of high-quality suspended devices based on atomically thin graphene layers are determined by electron-electron interactions. Bernal-stacked layers, in particular, have shown a remarkable even-odd effect with mono- and tri-layers remaining gapless conductors, and bi- and tetra-layers becoming gapped insulators. These observations—at odds with the established notion that (Bernal) trilayers and thicker multilayers are semi-metals—have resulted in the proposal of a physical scenario leading to a surprising prediction, namely that even-layered graphene multilayers remain insulating irrespective of their thickness. Here, we present data from two devices that conform ideally to this hypothesis, exhibiting the behavior expected for Bernal-stacked hexa- and octa-layer graphene. Despite their large thickness, these multilayers are insulating for carrier density |n| virtually perfect agreement with what is observed in bi- and tetra-layer graphene—and exhibit the expected integer quantum Hall effect. These findings indicate the soundness of our basic insights on the effect of electron interactions in Bernal graphene multilayers, show that graphene multilayers exhibit unusual and interesting physics that remains to be understood, and pose ever more pressing questions as to the microscopic mechanisms behind the semimetallic behavior of bulk graphite.

  16. Atomic theories

    CERN Document Server

    Loring, FH

    2014-01-01

    Summarising the most novel facts and theories which were coming into prominence at the time, particularly those which had not yet been incorporated into standard textbooks, this important work was first published in 1921. The subjects treated cover a wide range of research that was being conducted into the atom, and include Quantum Theory, the Bohr Theory, the Sommerfield extension of Bohr's work, the Octet Theory and Isotopes, as well as Ionisation Potentials and Solar Phenomena. Because much of the material of Atomic Theories lies on the boundary between experimentally verified fact and spec

  17. Applied atomic and collision physics special topics

    CERN Document Server

    Massey, H S W; Bederson, Benjamin

    1982-01-01

    Applied Atomic Collision Physics, Volume 5: Special Topics deals with topics on applications of atomic collisions that were not covered in the first four volumes of the treatise. The book opens with a chapter on ultrasensitive chemical detectors. This is followed by separate chapters on lighting, magnetohydrodynamic electrical power generation, gas breakdown and high voltage insulating gases, thermionic energy converters, and charged particle detectors. Subsequent chapters deal with the operation of multiwire drift and proportional chambers and streamer chambers and their use in high energy p

  18. Topological Insulators at Room Temperature

    Energy Technology Data Exchange (ETDEWEB)

    Zhang, Haijun; /Beijing, Inst. Phys.; Liu, Chao-Xing; /Tsinghua U., Beijing; Qi, Xiao-Liang; /Stanford U., Phys. Dept.; Dai, Xi; Fang, Zhong; /Beijing, Inst. Phys.; Zhang, Shou-Cheng; /Stanford U., Phys. Dept.

    2010-03-25

    Topological insulators are new states of quantum matter with surface states protected by the time-reversal symmetry. In this work, we perform first-principle electronic structure calculations for Sb{sub 2}Te{sub 3}, Sb{sub 2}Se{sub 3}, Bi{sub 2}Te{sub 3} and Bi{sub 2}Se{sub 3} crystals. Our calculations predict that Sb{sub 2}Te{sub 3}, Bi{sub 2}T e{sub 3} and Bi{sub 2}Se{sub 3} are topological insulators, while Sb{sub 2}Se{sub 3} is not. In particular, Bi{sub 2}Se{sub 3} has a topologically non-trivial energy gap of 0.3eV , suitable for room temperature applications. We present a simple and unified continuum model which captures the salient topological features of this class of materials. These topological insulators have robust surface states consisting of a single Dirac cone at the {Lambda} point.

  19. Hole-induced insulator-to-metal transition in La1-xSrxCrO3 epitaxial films

    Energy Technology Data Exchange (ETDEWEB)

    Zhang, Hongliang; Du, Yingge; Sushko, Petr; Bowden, Mark E.; Shutthanandan, V.; Sallis, Shawn; Piper, Louis F. J.; Chambers, Scott A.

    2015-04-01

    We have investigated the evolution of the structural and electronic properties of La1-xSrxCrO3 (0 ≤ x ≤ 1) epitaxial films deposited by molecular beam epitaxy (MBE) using x-ray diffraction, x-ray photoemission spectroscopy, x-ray absorption spectroscopy, electrical transport, and ab initio modeling. LaCrO3 is an antiferromagnetic Mott insulator whereas stoichiometric SrCrO3 is a metal. Substituting Sr2+ for La3+ in LaCrO3 effectively dopes holes into the top of valence band, leading to Cr4+ (3d2) local electron configurations. Core-level and valence-band features monotonically shift to lower binding energy with increasing x, indicating downward movement of the Fermi level toward the valence band maximum. An insulator-to-metal like transition is observed at x ≥ 0. 65 even as the material becomes a p-type semiconductor at lower doping level and eventually becomes degenerately doped. Valence band x-ray photoemission spectroscopy reveals diminution of electronic state density at the top of the valence band while O K-edge x-ray absorption spectroscopy shows the development of a new unoccupied state above the Fermi level as holes are doped into LaCrO3. These results indicate a pronounced redistribution of electronic state density of states upon hole doping, a result that is also obtained by density functional theory with a Hubbard U correction.

  20. Superconductivity from insulating elements under high pressure

    Energy Technology Data Exchange (ETDEWEB)

    Shimizu, Katsuya

    2015-07-15

    Highlights: • Even insulating molecule can become metal and superconductor by pressure with relatively high T{sub c}. • The highest T{sub c} is observed in sulfur with 17 K at 160 GPa. • Hydrogen is the best candidate of the highest T{sub c} element. - Abstract: The insulating and superconducting states would seem to have very different characteristics. Can any insulator become a superconductor? One proven method, doping an insulating material with carriers, can create itinerant states inside the gap between the conduction and valence bands. Another method is to squeeze the structure by applying pressure. Pressure can expand the bandwidth and also narrow the energy band gap. So the first step to turn an insulator into a superconductor is to make it metallic. Here we review our experimental research and results on superconductivity induced by applying pressure to insulating molecular systems such as elemental molecules.

  1. Hydrogen storage in insulated pressure vessels

    Energy Technology Data Exchange (ETDEWEB)

    Aceves, S.M.; Garcia-Villazana, O. [Lawrence Livermore National Lab., CA (United States)

    1998-08-01

    Insulated pressure vessels are cryogenic-capable pressure vessels that can be fueled with liquid hydrogen (LH{sub 2}) or ambient-temperature compressed hydrogen (CH{sub 2}). Insulated pressure vessels offer the advantages of liquid hydrogen tanks (low weight and volume), with reduced disadvantages (lower energy requirement for hydrogen liquefaction and reduced evaporative losses). This paper shows an evaluation of the applicability of the insulated pressure vessels for light-duty vehicles. The paper shows an evaluation of evaporative losses and insulation requirements and a description of the current analysis and experimental plans for testing insulated pressure vessels. The results show significant advantages to the use of insulated pressure vessels for light-duty vehicles.

  2. Unconventional Fermi surface in an insulating state

    Energy Technology Data Exchange (ETDEWEB)

    Harrison, Neil [Los Alamos National Lab. (LANL), Los Alamos, NM (United States); Tan, B. S. [Cambridge Univ., Cambridge (United Kingdom); Hsu, Y. -T. [Cambridge Univ., Cambridge (United Kingdom); Zeng, B. [National High Magnetic Field Lab., Tallahassee, FL (United States); Hatnean, M. Ciomaga [Univ. of Warwick, Coventry (United Kingdom); Zhu, Z. [Los Alamos National Lab. (LANL), Los Alamos, NM (United States); Hartstein, M. [Cambridge Univ., Cambridge (United Kingdom); Kiourlappou, M. [Cambridge Univ., Cambridge (United Kingdom); Srivastava, A. [Cambridge Univ., Cambridge (United Kingdom); Johannes, M. D. [Center for Computational Materials Science, Washington, DC (United States); Murphy, T. P. [National High Magnetic Field Lab., Tallahassee, FL (United States); Park, J. -H. [National High Magnetic Field Lab., Tallahassee, FL (United States); Balicas, L. [National High Magnetic Field Lab., Tallahassee, FL (United States); Lonzarich, G. G. [Cambridge Univ., Cambridge (United Kingdom); Balakrishnan, G. [Univ. of Warwick, Coventry (United Kingdom); Sebastian, Suchitra E. [Cambridge Univ., Cambridge (United Kingdom)

    2015-07-17

    Insulators occur in more than one guise; a recent finding was a class of topological insulators, which host a conducting surface juxtaposed with an insulating bulk. Here, we report the observation of an unusual insulating state with an electrically insulating bulk that simultaneously yields bulk quantum oscillations with characteristics of an unconventional Fermi liquid. We present quantum oscillation measurements of magnetic torque in high-purity single crystals of the Kondo insulator SmB6, which reveal quantum oscillation frequencies characteristic of a large three-dimensional conduction electron Fermi surface similar to the metallic rare earth hexaborides such as PrB6 and LaB6. As a result, the quantum oscillation amplitude strongly increases at low temperatures, appearing strikingly at variance with conventional metallic behavior.

  3. Floating insulated conductors for heating subsurface formations

    Science.gov (United States)

    Burns, David; Goodwin, Charles R.

    2014-07-29

    A heating system for a subsurface formation includes a conduit located in a first opening in the subsurface formation. Three electrical conductors are located in the conduit. A return conductor is located inside the conduit. The return conductor is electrically coupled to the ends of the electrical conductors distal from the surface of the formation. Insulation is located inside the conduit. The insulation electrically insulates the three electrical conductors, the return conductor, and the conduit from each other.

  4. Hopping energy and percolation-type transport in p-GaAs low densities near the 2D metal-insulator transition at zero magnetic field

    Science.gov (United States)

    Dlimi, S.; El kaaouachi, A.; Narjis, A.; Limouny, L.; Sybous, A.; Errai, M.

    2013-10-01

    We investigated the temperature dependence of resistivity of a high mobility two-dimensional holes system grown on the (311) GaAs surface in the absence of the magnetic field near the metal-insulator transition. The Coulomb hopping was found in a wide range of temperature and carrier density. Quantitative analysis of our results suggests that a crossover from Efros-Shklovskii to Mott variable range hopping due to screening phenomenon when the hopping distance increases. We found that using the 2D single particle hopping amplitude CES gives unreasonably high localization lengths. Therefore, we believe that electrical transport is dominated by correlated hopping and the hopping amplitude must be renormalized by a reduction factor A≈1.6. The localization length appears to diverge in a power-law fashion near the transition point. The analysis of the hopping gives results consistent with the prediction of the critical point from a recent study of percolation and other experiences.

  5. Localization-driven metal-insulator transition in epitaxial hole-doped Nd1-x Sr x NiO3 ultrathin films

    Science.gov (United States)

    Wang, Le; Chang, Lei; Yin, Xinmao; Rusydi, Andrivo; You, Lu; Zhou, Yang; Fang, Liang; Wang, Junling

    2017-01-01

    Advances in thin film growth technologies make it possible to obtain ultra-thin perovskite oxide films and open the window for controlling novel electronic phases for use in functional nanoscale electronics, such as switches and sensors. Here, we study the thickness-dependent transport characteristics of high-quality ultrathin Nd0.9Sr0.1NiO3 (Sr-NNO) films, which were grown on LaAlO3 (0 0 1) single-crystal substrates by using pulsed laser deposition method. Thick Sr-NNO films (25 unit cells) exhibit metallic behavior with the electrical resistivity following the T  n (n  system, while a temperature driven metal-insulator transition (MIT) is observed with films of less than 15 unit cells. The transition temperature increases with reducing film thickness, until the insulating characteristic is observed even at room temperature. The emergence of the insulator ground state can be attributed to weak localization driven MIT expected by considering Mott-Ioffe-Regel limit. Furthermore, the magneto-transport study of Sr-NNO ultrathin films also confirms that the observed MIT is due to the disorder-induced localization rather than the electron-electron interactions.

  6. Tuning the metal-insulator transition in NdNiO3 thin films

    Science.gov (United States)

    Shiyani, T.; Shekhada, K. G.; Savaliya, C. R.; Markna, J. H.

    2017-05-01

    The RNiO3 (R is rare earth) perovskites are famous for their metal to insulator transition (MIT). The temperature can be transformed and depends on the nature of the rare earth. The MIT in thin films and heterostructures of RNiO3 propose the chance to control the MIT as a function of thickness via strain using different substrates. We have reported the electrical transport properties of NdNiO3/NdGaO3, and NNO/NGO/STO structures. These structures were fabricated by pulsed laser deposition (PLD) method. The temperature of the MIT changes from 155K to 195 K. The electrical resistivity of the heterostructures undergoes MIT, depending on the thickness and deposition conditions. Thickness and deposition temperature were found to have a great impact on the electrical transport properties. The shift in TMI changes with thickness and it larger for thinner NdNiO3. The MIT of NNO thin films is responsive to strain and its partial relaxation creates an inhomogeneous strain field that broadens the MIT. This study may be potentially applicable to Mott transistor devices.

  7. Aerogel Insulation to Support Cryogenic Technologies Project

    Data.gov (United States)

    National Aeronautics and Space Administration — NASA is seeking a high performance thermal insulation material for cryogenic applications in space launch development. Many of the components in cryogenic...

  8. External insulation with cellular plastic materials

    DEFF Research Database (Denmark)

    Sørensen, Lars Schiøtt; Nielsen, Anker

    2014-01-01

    External thermal insulation composite systems (ETICS) can be used as extra insulation of existing buildings. The system can be made of cellular plastic materials or mineral wool. There is a European Technical guideline, ETAG 004, that describe the tests that shall be conducted on such systems....... This paper gives a comparison of systems with mineral wool and cellular plastic, based on experience from practice and literature. It is important to look at the details in the system and at long time stability of the properties such as thermal insulation, moisture and fire. Investigation of fire properties...... insulation....

  9. Thermal Insulation Strips Conserve Energy

    Science.gov (United States)

    2009-01-01

    Launching the space shuttle involves an interesting paradox: While the temperatures inside the shuttle s main engines climb higher than 6,000 F hot enough to boil iron for fuel, the engines use liquid hydrogen, the second coldest liquid on Earth after liquid helium. Maintained below 20 K (-423 F), the liquid hydrogen is contained in the shuttle s rust-colored external tank. The external tank also contains liquid oxygen (kept below a somewhat less chilly 90 K or -297 F) that combines with the hydrogen to create an explosive mixture that along with the shuttle s two, powdered aluminum-fueled solid rocket boosters allows the shuttle to escape Earth s gravity. The cryogenic temperatures of the main engines liquid fuel can cause ice, frost, or liquefied air to build up on the external tank and other parts of the numerous launch fueling systems, posing a possible debris risk when the ice breaks off during launch and causing difficulties in the transfer and control of these cryogenic liquid propellants. Keeping the fuel at the necessary ultra-cold temperatures while minimizing ice buildup and other safety hazards, as well as reducing the operational maintenance costs, has required NASA to explore innovative ways for providing superior thermal insulation systems. To address the challenge, the Agency turned to an insulating technology so effective that, even though it is mostly air, a thin sheet can prevent a blowtorch from igniting a match. Aerogels were invented in 1931 and demonstrate properties that make them the most extraordinary insulating materials known; a 1-inch-thick piece of aerogel provides the same insulation as layering 15 panes of glass with air pockets in between. Derived from silica, aluminum oxide, or carbon gels using a supercritical drying process - resulting in a composition of almost 99-percent air - aerogels are the world s lightest solid (among 15 other titles they hold in the Guinness World Records), can float indefinitely on water if treated to be

  10. The electron-atom interaction in partially ionized dense plasmas

    Energy Technology Data Exchange (ETDEWEB)

    Omarbakiyeva, Yu A; Ramazanov, T S; Roepke, G [IETP, Al Farabi Kazakh National University, Tole Bi 96a, Almaty 050012 (Kazakhstan)], E-mail: yultuz@physics.kz

    2009-05-29

    The electron-atom interaction is considered in dense partially ionized plasmas. The separable potential is constructed from scattering data using effective radius theory. Parameters of the interaction potential were obtained from phase shifts, scattering length and effective radius. The binding energy of the electron in the H{sup -} ion is determined for the singlet channel on the basis of the reconstructed separable potential. In dense plasmas, the influence of the Pauli exclusion principle on the phase shifts and the binding energy is considered. Due to the Pauli blocking, the binding energy vanishes at the Mott density. At that density the behavior of the phase shifts is drastically changed. This leads to modifications of macroscopic properties such as composition and transport coefficients.

  11. Atomic rivals

    Energy Technology Data Exchange (ETDEWEB)

    Goldschmidt, B.

    1990-01-01

    This book is a memoir of rivalries among the Allies over the bomb, by a participant and observer. Nuclear proliferation began in the uneasy wartime collaboration of the United States, England, Canada, and Free France to produce the atom bomb. Through the changes of history, a young French chemist had a role in almost every act of this international drama. This memoir is based on Goldschmidt's own recollections, interviews with other leading figures, and 3,000 pages of newly declassified documents in Allied archives. From his own start as Marie Curie's lab assistant, Goldschmidt's career was closely intertwined with Frances complicated rise to membership in the nuclear club. As a refugee from the Nazis, he became part of the wartime nuclear energy project in Canada and found himself the only French scientist to work (although briefly) on the American atom bomb project.

  12. Atomic physics

    Energy Technology Data Exchange (ETDEWEB)

    Livingston, A.E.; Kukla, K.; Cheng, S. [Univ. of Toledo, OH (United States)] [and others

    1995-08-01

    In a collaboration with the Atomic Physics group at Argonne and the University of Toledo, the Atomic Physics group at the University of Notre Dame is measuring the fine structure transition energies in highly-charged lithium-like and helium-like ions using beam-foil spectroscopy. Precise measurements of 2s-2p transition energies in simple (few-electron) atomic systems provide stringent tests of several classes of current atomic- structure calculations. Analyses of measurements in helium-like Ar{sup 16+} have been completed, and the results submitted for publication. A current goal is to measure the 1s2s{sup 3}S{sub 1} - 1s2p{sup 3}P{sub 0} transition wavelength in helium-like Ni{sup 26+}. Measurements of the 1s2s{sup 2}S{sub 1/2} - 1s2p{sup 2}P{sub 1/2,3/2} transition wavelengths in lithium-like Kr{sup 33+} is planned. Wavelength and lifetime measurements in copper-like U{sup 63+} are also expected to be initiated. The group is also participating in measurements of forbidden transitions in helium-like ions. A measurement of the lifetime of the 1s2s{sup 3}S{sub 1} state in Kr{sup 34+} was published recently. In a collaboration including P. Mokler of GSI, Darmstadt, measurements have been made of the spectral distribution of the 2E1 decay continuum in helium-like Kr{sup 34+}. Initial results have been reported and further measurements are planned.

  13. Design of Mott and topological phases on buckled 3d-oxide honeycomb lattices

    Science.gov (United States)

    Pentcheva, Rossitza

    The honeycomb lattice, as realized e.g. in graphene, has rendered a robust platform for innovative science and potential applications. A much richer generalization of this lattice arises in (111)-oriented bilayers of perovskites, adding the complexity of the strongly correlated, multiorbital nature of electrons in transition metal oxides. Based on first principles calculations with an on-site Coulomb repulsion, here we provide trends in the evolution of ground states versus band filling in (111)-oriented (La XO3)2 /(LaAlO3)4 superlattices, with X spanning the entire 3d transition metal series. The competition between local quasi-cubic and global triangular symmetry triggers unanticipated broken symmetry phases, with mechanisms ranging from Jahn-Teller distortion, to charge-, spin-, and orbital-ordering. LaMnO3 and LaCoO3 bilayers, where spin-orbit coupling opens a sizable gap in the Dirac-point Fermi surface, emerge as much desired oxide-based Chern insulators, the latter displaying a gap capable of supporting room-temperature applications Further realizations of the honeycomb lattice and geometry patterns beyond the perovskite structure will be addressed. Research supported by the DFG, SFB/TR80.

  14. Superconducting interfaces between insulating oxides.

    Science.gov (United States)

    Reyren, N; Thiel, S; Caviglia, A D; Kourkoutis, L Fitting; Hammerl, G; Richter, C; Schneider, C W; Kopp, T; Rüetschi, A-S; Jaccard, D; Gabay, M; Muller, D A; Triscone, J-M; Mannhart, J

    2007-08-31

    At interfaces between complex oxides, electronic systems with unusual electronic properties can be generated. We report on superconductivity in the electron gas formed at the interface between two insulating dielectric perovskite oxides, LaAlO3 and SrTiO3. The behavior of the electron gas is that of a two-dimensional superconductor, confined to a thin sheet at the interface. The superconducting transition temperature of congruent with 200 millikelvin provides a strict upper limit to the thickness of the superconducting layer of congruent with 10 nanometers.

  15. Characterization of Microporous Insulation, Microsil

    Energy Technology Data Exchange (ETDEWEB)

    Thomas, R. [Lawrence Livermore National Lab. (LLNL), Livermore, CA (United States)

    2017-06-15

    Microsil microporous insulation has been characterized by Lawrence Livermore National Laboratory for possible use in structural and thermal applications in the DPP-1 design. Qualitative test results have provided mechanical behavioral characteristics for DPP-1 design studies and focused on the material behavioral response to being crushed, cyclically loaded, and subjected to vibration for a confined material with an interference fit or a radial gap. Quantitative test results have provided data to support the DPP-1 FEA model analysis and verification and were used to determine mechanical property values for the material under a compression load. The test results are documented within this report.

  16. Probing Matter-Field and Atom-Number Correlations in Optical Lattices by Global Nondestructive Addressing

    CERN Document Server

    Kozlowski, Wojciech; Mekhov, Igor B

    2014-01-01

    We show that light scattering from an ultracold gas reveals not only density correlations, but also matter-field interference at its shortest possible distance in an optical lattice, which defines key properties such as tunneling and matter-field phase gradients. This signal can be enhanced by concentrating probe light between lattice sites rather than at density maxima. As addressing between two single sites is challenging, we focus on global nondestructive scattering, allowing probing order parameters, matter-field quadratures and their squeezing. The scattering angular distribution displays peaks even if classical diffraction is forbidden and we derive generalized Bragg conditions. Light scattering distinguishes all phases in the Mott insulator - superfluid - Bose glass phase transition.

  17. Role of oxidation on surface conductance of the topological insulator Bi2Te2Se

    Science.gov (United States)

    Hwang, Jin Heui; Park, Joonbum; Kwon, Sangku; Kim, Jun Sung; Park, Jeong Young

    2014-12-01

    We investigated the effect of surface oxides on charge transport properties in a topological insulator (Bi2Te2Se) using conductive probe atomic force microscopy in an ultrahigh vacuum environment. Uniform distribution of the measured friction and current were observed over a single quintuple layer terrace after exposure to the ambient environment, which is an indication of uniform surface oxide coverage. An oxide-free topological insulator surface was exposed using tip-induced etching. By comparing surface conduction on a fresh surface versus a surface exposed to air, we observed a minor change in resistance when surface oxide was present. The current density varied with applied load on the oxidized surface, which implies that the topological surface states respond to tip-induced pressure even though surface oxide is present. From these results, we conclude that surface oxidation in air has a negligible effect on surface conductance in topological insulators.

  18. Pulsed laser deposition of high-quality thin films of the insulating ferromagnet EuS

    Energy Technology Data Exchange (ETDEWEB)

    Yang, Qi I., E-mail: qiyang@stanford.edu [Department of Physics, Stanford University, Stanford, California 94305 (United States); Stanford Institute for Materials and Energy Sciences, SLAC National Accelerator Laboratory, 2575 Sand Hill Road, Menlo Park, California 94025 (United States); Geballe Laboratory for Advanced Materials, Stanford University, Stanford, California 94305 (United States); Zhao, Jinfeng; Risbud, Subhash H. [Department of Chemical Engineering and Materials Science, University of California, Davis, California 95616 (United States); Zhang, Li; Dolev, Merav [Geballe Laboratory for Advanced Materials, Stanford University, Stanford, California 94305 (United States); Department of Applied Physics, Stanford University, Stanford, California 94305 (United States); Fried, Alexander D. [Department of Physics, Stanford University, Stanford, California 94305 (United States); Geballe Laboratory for Advanced Materials, Stanford University, Stanford, California 94305 (United States); Marshall, Ann F. [Stanford Nanocharacterization Laboratory, Stanford University, Stanford, California 94305 (United States); Kapitulnik, Aharon [Department of Physics, Stanford University, Stanford, California 94305 (United States); Stanford Institute for Materials and Energy Sciences, SLAC National Accelerator Laboratory, 2575 Sand Hill Road, Menlo Park, California 94025 (United States); Geballe Laboratory for Advanced Materials, Stanford University, Stanford, California 94305 (United States); Department of Applied Physics, Stanford University, Stanford, California 94305 (United States)

    2014-02-24

    High-quality thin films of the ferromagnetic insulator europium(II) sulfide (EuS) were fabricated by pulsed laser deposition on Al{sub 2}O{sub 3} (0001) and Si (100) substrates. A single orientation was obtained with the [100] planes parallel to the substrates, with atomic-scale smoothness indicates a near-ideal surface topography. The films exhibit uniform ferromagnetism below 15.9 K, with a substantial component of the magnetization perpendicular to the plane of the films. Optimization of the growth condition also yielded truly insulating films with immeasurably large resistance. This combination of magnetic and electric properties opens the gate for future devices that require a true ferromagnetic insulator.

  19. The Atomic orbitals of the topological atom

    OpenAIRE

    Ramos-Cordoba, Eloy; Salvador Sedano, Pedro

    2013-01-01

    The effective atomic orbitals have been realized in the framework of Bader's atoms in molecules theory for a general wavefunction. This formalism can be used to retrieve from any type of calculation a proper set of orthonormalized numerical atomic orbitals, with occupation numbers that sum up to the respective Quantum Theory of Atoms in Molecules (QTAIM) atomic populations. Experience shows that only a limited number of effective atomic orbitals exhibit significant occupation numbers. These c...

  20. Möbius Kondo insulators

    Science.gov (United States)

    Chang, Po-Yao; Erten, Onur; Coleman, Piers

    2017-08-01

    Heavy fermion materials have recently attracted attention for their potential to combine topological protection with strongly correlated electron physics. To date, the ideas of topological protection have been restricted to the heavy fermion or `Kondo' insulators with the simplest point-group symmetries. Here we argue that the presence of nonsymmorphic crystal symmetries in many heavy fermion materials opens up a new family of topologically protected heavy electron systems. Re-examination of archival resistivity measurements in the nonsymmorphic heavy fermion insulators Ce3Bi4Pt3 and CeNiSn reveals the presence of a low-temperature conductivity plateau, making them candidate members of the new class of material. We illustrate our ideas with a specific model for CeNiSn, showing how glide symmetries generate surface states with a novel Möbius braiding that can be detected by ARPES or non-local conductivity measurements. One of the interesting effects of strong correlation is the development of partially localization or `Kondo breakdown' on the surfaces, which transforms Möbius surface states into quasi-one-dimensional conductors, with the potential for novel electronic phase transitions.

  1. Thermal insulation properties of walls

    Directory of Open Access Journals (Sweden)

    Zhukov Aleksey Dmitrievich

    2014-05-01

    Full Text Available Heat-protective qualities of building structures are determined by the qualities of the used materials, adequate design solutions and construction and installation work of high quality. This rule refers both to the structures made of materials similar in their structure and nature and mixed, combined by a construction system. The necessity to ecaluate thermal conductivity is important for a product and for a construction. Methods for evaluating the thermal protection of walls are based on the methods of calculation, on full-scale tests in a laboratory or on objects. At the same time there is a reason to believe that even deep and detailed calculation may cause deviation of the values from real data. Using finite difference method can improve accuracy of the results, but it doesn’t solve all problems. The article discusses new approaches to evaluating thermal insulation properties of walls. The authors propose technique of accurate measurement of thermal insulation properties in single blocks and fragments of walls and structures.

  2. Diffraction of fast atoms and molecules during grazing scattering from surfaces

    Science.gov (United States)

    Schüller, A.; Busch, M.; Seifert, J.; Wethekam, S.; Winter, H.

    2009-11-01

    Grazing scattering of light atoms and small molecules with energies up to several keV from atomically clean and flat surfaces along low-indexed directions gives rise to diffraction phenomena. The potential of this new method of Fast Atom Diffraction (FAD) as surface analytical tool is discussed. We show that, despite substantial decoherence due to thermal vibrations, nuclear energy loss, and, especially, excitations of the electronic system, FAD is not limited to insulator or semiconductor surfaces. Detailed studies of the geometric structure of insulator surfaces and superstructures on metal surfaces performed using FAD as an efficient virtually non-destructive method are presented.

  3. The Insulation Properties of Oil-Impregnated Insulation Paper Reinforced with Nano-TiO2

    OpenAIRE

    Ruijin Liao; Cheng Lv; Lijun Yang; Yiyi Zhang; Weiqiang Wu; Chao Tang

    2013-01-01

    Oil-impregnated insulation paper has been widely used in transformers because of its low cost and desirable physical and electrical properties. However, research to improve the insulation properties of oil-impregnated insulation paper is rarely found. In this paper, nano-TiO2 was used to stick to the surface of cellulose which was used to make insulation paper. After oil-impregnated insulation paper reinforced by nano-TiO2 was prepared, the tensile strength, breakdown strength, and dielectric...

  4. Insulation systems for superconducting transmission cables

    DEFF Research Database (Denmark)

    Tønnesen, Ole

    1996-01-01

    the electrical insulation is placed outside both the superconducting tube and the cryostat. The superconducting tube is cooled by liquid nitrogen which is pumped through the hollow part of the tube.2) The cryogenic dielectric design, where the electrical insulation is placed inside the cryostat and thus is kept...

  5. Improved insulator layer for MIS devices

    Science.gov (United States)

    Miller, W. E.

    1980-01-01

    Insulating layer of supersonic conductor such as LaF sub 3 has been shown able to impart improved electrical properties to photoconductive detectors and promises to improve other metal/insulator/semiconductor (MIS) devices, e.g., MOSFET and integrated circuits.

  6. Ceramic fibres for high temperature insulation

    Energy Technology Data Exchange (ETDEWEB)

    Padgett, G.C.

    1986-03-01

    Traditionally, refractory linings for high temperature plant and furnaces have comprised either brick or some form of concrete. In recent years, energy conservation has encouraged the greater use of high temperature insulation which is also available in either brick or a lightweight concrete. As an alternative, insulation can also be achieved using fibrous products or fibres combining low heat transfer with low heat capacity.

  7. Topological insulators: A romance with many dimensions

    Science.gov (United States)

    Manoharan, Hari C.

    2010-07-01

    Electric charges on the boundaries of certain insulators are programmed by topology to keep moving forward when they encounter an obstacle, rather than scattering backwards and increasing the resistance of the system. This is just one reason why topological insulators are one of the hottest topics in physics right now.

  8. Facade insulation with mineral wool. Fassadendaemmung mit Mineralwolle

    Energy Technology Data Exchange (ETDEWEB)

    Anon.

    1992-10-01

    Mineral wool insulations have proved worthwhile in construction engineering as apart from their very good thermal and sound insulating properties and they can be used nearly everywhere in construction as means of fire protection. With the passing of the 3rd Waermeschutzverordnung (regulation about thermal insulation) the requirements on the insulation of buildings have drastically increased. In this article insulation systems for external walls with mineral wool are described which are suited to meet also this new high insulation standard. (orig.)

  9. Triple-glazed insulating unit with improved edge insulation

    Science.gov (United States)

    Goodwin, George B.; Buchanan, Michael J.

    2016-06-07

    An insulating unit includes a first spacer frame between first and second sheets, e.g. glass sheets, and a second spacer frame between the second sheet and a third sheet. A first surface of the first spacer frame is adhered to inner surface of the first sheet, and an opposite second surface of the first spacer frame is adhered to a first surface of the second sheet, by a moisture impervious adhesive layer. A first outer surface of the second spacer frame is adhered to a second surface of the second sheet, and an opposite second outer surface of the second spacer frame is adhered to an inner surface of the third sheet, by the adhesive layer. The first spacer frame and the second spacer frame have an offset of greater than zero.

  10. Triple-glazed insulating unit with improved edge insulation

    Energy Technology Data Exchange (ETDEWEB)

    Goodwin, George B.; Buchanan, Michael J.

    2016-06-07

    An insulating unit includes a first spacer frame between first and second sheets, e.g. glass sheets, and a second spacer frame between the second sheet and a third sheet. A first surface of the first spacer frame is adhered to inner surface of the first sheet, and an opposite second surface of the first spacer frame is adhered to a first surface of the second sheet, by a moisture impervious adhesive layer. A first outer surface of the second spacer frame is adhered to a second surface of the second sheet, and an opposite second outer surface of the second spacer frame is adhered to an inner surface of the third sheet, by the adhesive layer. The first spacer frame and the second spacer frame have an offset of greater than zero.

  11. Insulator Surface Flashover Due to UV Illumination

    Energy Technology Data Exchange (ETDEWEB)

    Javedani, J B; Houck, T L; Lahowe, D A; Vogtlin, G E; Goerz, D A

    2009-07-27

    The surface of an insulator under vacuum and under electrical charge will flashover when illuminated by a critical dose of ultra-violet (UV) radiation - depending on the insulator size and material, insulator cone angle, the applied voltage and insulator shot-history. A testbed comprised of an excimer laser (KrF, 248 nm, {approx}16 MW, 30 ns FWHM,), a vacuum chamber, and a negative polarity dc high voltage power supply ({le} -60 kV) were assembled to test 1.0 cm thick angled insulators for surface-flashover. Several candidate insulator materials, e.g. High Density Polyethylene (HDPE), Rexolite{reg_sign} 1400, Macor{trademark} and Mycalex, of varying cone angles were tested against UV illumination. Commercial energy meters were used to measure the UV fluence of the pulsed laser beam. In-house designed and fabricated capacitive probes (D-dots, >12 GHz bandwidth) were embedded in the anode electrode underneath the insulator to determine the time of UV arrival and time of flashover. Of the tested insulators, the +45 degree Rexolite insulator showed more resistance to UV for surface flashover; at UV fluence level of less than 13 mJ/cm{sup 2}, it was not possible to induce a flashover for up to -60 kV of DC potential across the insulator's surface. The probes also permitted the electrical charge on the insulator before and after flashover to be inferred. Photon to electron conversion efficiency for the surface of Rexolite insulator was determined from charge-balance equation. In order to understand the physical mechanism leading to flashover, we further experimented with the +45 degree Rexolite insulator by masking portions of the UV beam to illuminate only a section of the insulator surface; (1) the half nearest the cathode and subsequently, (2) the half nearest the anode. The critical UV fluence and time to flashover were measured and the results in each case were then compared with the base case of full-beam illumination. It was discovered that the time for the

  12. Electrically Tunable Magnetism in Magnetic Topological Insulators

    Energy Technology Data Exchange (ETDEWEB)

    Wang, Jing; Lian, Biao; Zhang, Shou-Cheng

    2015-07-14

    The external controllability of the magnetic properties in topological insulators would be important both for fundamental and practical interests. Here we predict the electric-field control of ferromagnetism in a thin film of insulating magnetic topological insulators. The decrease of band inversion by the application of electric fields results in a reduction of magnetic susceptibility, and hence in the modification of magnetism. Remarkably, the electric field could even induce the magnetic quantum phase transition from ferromagnetism to paramagnetism. We further propose a transistor device in which the dissipationless charge transport of chiral edge states is controlled by an electric field. In particular, the field-controlled ferromagnetism in a magnetic topological insulator can be used for voltage based writing of magnetic random access memories in magnetic tunnel junctions. The simultaneous electrical control of magnetic order and chiral edge transport in such devices may lead to electronic and spintronic applications for topological insulators.

  13. Topological Insulators Dirac Equation in Condensed Matters

    CERN Document Server

    Shen, Shun-Qing

    2012-01-01

    Topological insulators are insulating in the bulk, but process metallic states around its boundary owing to the topological origin of the band structure. The metallic edge or surface states are immune to weak disorder or impurities, and robust against the deformation of the system geometry. This book, Topological insulators, presents a unified description of topological insulators from one to three dimensions based on the modified Dirac equation. A series of solutions of the bound states near the boundary are derived, and the existing conditions of these solutions are described. Topological invariants and their applications to a variety of systems from one-dimensional polyacetalene, to two-dimensional quantum spin Hall effect and p-wave superconductors, and three-dimensional topological insulators and superconductors or superfluids are introduced, helping readers to better understand this fascinating new field. This book is intended for researchers and graduate students working in the field of topological in...

  14. Atom Skimmers and Atom Lasers Utilizing Them

    Science.gov (United States)

    Hulet, Randall; Tollett, Jeff; Franke, Kurt; Moss, Steve; Sackett, Charles; Gerton, Jordan; Ghaffari, Bita; McAlexander, W.; Strecker, K.; Homan, D.

    2005-01-01

    Atom skimmers are devices that act as low-pass velocity filters for atoms in thermal atomic beams. An atom skimmer operating in conjunction with a suitable thermal atomic-beam source (e.g., an oven in which cesium is heated) can serve as a source of slow atoms for a magneto-optical trap or other apparatus in an atomic-physics experiment. Phenomena that are studied in such apparatuses include Bose-Einstein condensation of atomic gases, spectra of trapped atoms, and collisions of slowly moving atoms. An atom skimmer includes a curved, low-thermal-conduction tube that leads from the outlet of a thermal atomic-beam source to the inlet of a magneto-optical trap or other device in which the selected low-velocity atoms are to be used. Permanent rare-earth magnets are placed around the tube in a yoke of high-magnetic-permeability material to establish a quadrupole or octupole magnetic field leading from the source to the trap. The atoms are attracted to the locus of minimum magnetic-field intensity in the middle of the tube, and the gradient of the magnetic field provides centripetal force that guides the atoms around the curve along the axis of the tube. The threshold velocity for guiding is dictated by the gradient of the magnetic field and the radius of curvature of the tube. Atoms moving at lesser velocities are successfully guided; faster atoms strike the tube wall and are lost from the beam.

  15. The Mott transition in V 2O 3 and NiSe xS 2- x: insights from dynamical mean field theory

    Science.gov (United States)

    Kotliar, G.

    1999-01-01

    We discuss some aspects of the pressure (or interaction) driven Mott transition, in three-dimensional transition metal oxides by means of dynamical mean field theory. We isolate the universal properties of the transition from the aspects which depend more on the detailed chemistry of the compounds. In this light we can understand the main differences and the remarkable similarities between the NiSe xS 2- x and the V 2O 3 system. Both theory and experiment converge on the transfer of spectral weight from low energies to high energies as the universal mechanism underlying the Mott transition, and we comment on the possible relevance of these ideas to other metal to nonmetal transitions.

  16. Interferometric measurement method for Z2 invariants of time-reversal invariant topological insulators

    Science.gov (United States)

    Grusdt, Fabian; Abanin, Dmitry; Demler, Eugene

    2013-05-01

    Recently experiments with ultracold atoms started to explore topological phases in 1D optical lattices. While transport measurements are challenging in these systems, ways to directly measure topological quantum numbers using a combination of Bloch oscillations and Ramsey interferometry have been explored (Atala et al., arXiv:1212.0572). In this talk I will present ways to measure the Z2 topological quantum numbers of two and three dimensional time-reversal invariant (TR) topological insulators. In this case non-Abelian Bloch oscillations can be combined with Ramsey interferometry to map out the topological properties of a given band-structure. Our method is very general and works even in the presence of accidental degeneracies. The applicability of the scheme is discussed for different theoretically proposed implementations of TR topological insulators using ultracold atoms. F. G. is grateful to Harvard University for hospitality and acknowledges financial support from Graduate School Materials Science in Mainz (MAINZ).

  17. Insulator-protected mechanically controlled break junctions for measuring single-molecule conductance in aqueous environments

    Science.gov (United States)

    Muthusubramanian, N.; Galan, E.; Maity, C.; Eelkema, R.; Grozema, F. C.; van der Zant, H. S. J.

    2016-07-01

    We present a method to fabricate insulated gold mechanically controlled break junctions (MCBJ) by coating the metal with a thin layer of aluminum oxide using plasma enhanced atomic layer deposition. The Al2O3 thickness deposited on the MCBJ devices was varied from 2 to 15 nm to test the suppression of leakage currents in deionized water and phosphate buffered saline. Junctions coated with a 15 nm thick oxide layer yielded atomically sharp electrodes and negligible conductance counts in the range of 1 to 10-4 G0 (1 G0 = 77 μS), where single-molecule conductances are commonly observed. The insulated devices were used to measure the conductance of an amphiphilic oligophenylene ethynylene derivative in deionized water.

  18. Field evaporation of insulators and semiconductors: Theoretical insights for ZnO.

    Science.gov (United States)

    Karahka, Markus; Kreuzer, H J

    2015-12-01

    We look at the new challenges associated with Atom Probe Tomography of insulators and semiconductors with regard to local fields inside and on the surface of such materials. The theoretical discovery that in high fields the band gap in these materials is drastically reduced to the point where at the evaporation field strength it vanishes will be crucial in our discussion. To understand Atom Probe results on the field evaporation of insulators and semiconductors we use density functional theory on ZnO clusters to follow the structural and electronic changes during field evaporation and to obtain potential energy curves, HOMO-LUMO gaps, field distributions, desorption pathways and fragments, dielectric constants, and polarizabilities. We also examine the effects of electric field reversal on the evaporation of ZnO and compare the results with Si.

  19. Quantum Capacitance in Topological Insulators

    Science.gov (United States)

    Xiu, Faxian; Meyer, Nicholas; Kou, Xufeng; He, Liang; Lang, Murong; Wang, Yong; Yu, Xinxin; Fedorov, Alexei V.; Zou, Jin; Wang, Kang L.

    2012-01-01

    Topological insulators show unique properties resulting from massless, Dirac-like surface states that are protected by time-reversal symmetry. Theory predicts that the surface states exhibit a quantum spin Hall effect with counter-propagating electrons carrying opposite spins in the absence of an external magnetic field. However, to date, the revelation of these states through conventional transport measurements remains a significant challenge owing to the predominance of bulk carriers. Here, we report on an experimental observation of Shubnikov-de Haas oscillations in quantum capacitance measurements, which originate from topological helical states. Unlike the traditional transport approach, the quantum capacitance measurements are remarkably alleviated from bulk interference at high excitation frequencies, thus enabling a distinction between the surface and bulk. We also demonstrate easy access to the surface states at relatively high temperatures up to 60 K. Our approach may eventually facilitate an exciting exploration of exotic topological properties at room temperature. PMID:22993694

  20. Reconfigurable Microwave Photonic Topological Insulator

    Science.gov (United States)

    Goryachev, Maxim; Tobar, Michael E.

    2016-12-01

    Using full 3D finite-element simulation and underlining Hamiltonian models, we demonstrate reconfigurable photonic analogues of topological insulators on a regular lattice of tunable posts in a reentrant 3D lumped element-type system. The tunability allows a dynamical in situ change of media chirality and other properties via the alteration of the same parameter for all posts, and as a result, great flexibility in the choice of bulk-edge configurations. Additionally, one-way photon transport without an external magnetic field is demonstrated. The ideas are illustrated by using both full finite-element simulation as well as simplified harmonic oscillator models. Dynamical reconfigurability of the proposed systems paves the way to a class of systems that can be employed for random access, topological signal processing, and sensing.