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Sample records for atlas pixel sensors

  1. The ATLAS Silicon Pixel Sensors

    CERN Document Server

    Alam, M S; Einsweiler, K F; Emes, J; Gilchriese, M G D; Joshi, A; Kleinfelder, S A; Marchesini, R; McCormack, F; Milgrome, O; Palaio, N; Pengg, F; Richardson, J; Zizka, G; Ackers, M; Andreazza, A; Comes, G; Fischer, P; Keil, M; Klasen, V; Kühl, T; Meuser, S; Ockenfels, W; Raith, B; Treis, J; Wermes, N; Gössling, C; Hügging, F G; Wüstenfeld, J; Wunstorf, R; Barberis, D; Beccherle, R; Darbo, G; Gagliardi, G; Gemme, C; Morettini, P; Musico, P; Osculati, B; Parodi, F; Rossi, L; Blanquart, L; Breugnon, P; Calvet, D; Clemens, J-C; Delpierre, P A; Hallewell, G D; Laugier, D; Mouthuy, T; Rozanov, A; Valin, I; Aleppo, M; Caccia, M; Ragusa, F; Troncon, C; Lutz, Gerhard; Richter, R H; Rohe, T; Brandl, A; Gorfine, G; Hoeferkamp, M; Seidel, SC; Boyd, GR; Skubic, P L; Sícho, P; Tomasek, L; Vrba, V; Holder, M; Ziolkowski, M; D'Auria, S; del Papa, C; Charles, E; Fasching, D; Becks, K H; Lenzen, G; Linder, C

    2001-01-01

    Prototype sensors for the ATLAS silicon pixel detector have been developed. The design of the sensors is guided by the need to operate them in the severe LHC radiation environment at up to several hundred volts while maintaining a good signal-to-noise ratio, small cell size, and minimal multiple scattering. The ability to be operated under full bias for electrical characterization prior to the attachment of the readout integrated circuit electronics is also desired.

  2. Planar pixel sensors for the ATLAS upgrade: beam tests results

    International Nuclear Information System (INIS)

    The performance of planar silicon pixel sensors, in development for the ATLAS Insertable B-Layer and High Luminosity LHC (HL-LHC) upgrades, has been examined in a series of beam tests at the CERN SPS facilities since 2009. Salient results are reported on the key parameters, including the spatial resolution, the charge collection and the charge sharing between adjacent cells, for different bulk materials and sensor geometries. Measurements are presented for n+-in-n pixel sensors irradiated with a range of fluences and for p-type silicon sensors with various layouts from different vendors. All tested sensors were connected via bump-bonding to the ATLAS Pixel read-out chip. The tests reveal that both n-type and p-type planar sensors are able to collect significant charge even after the lifetime fluence expected at the HL-LHC.

  3. High-voltage pixel sensors for ATLAS upgrade

    Science.gov (United States)

    Perić, I.; Kreidl, C.; Fischer, P.; Bompard, F.; Breugnon, P.; Clemens, J.-C.; Fougeron, D.; Liu, J.; Pangaud, P.; Rozanov, A.; Barbero, M.; Feigl, S.; Capeans, M.; Ferrere, D.; Pernegger, H.; Ristic, B.; Muenstermann, D.; Gonzalez Sevilla, S.; La Rosa, A.; Miucci, A.; Nessi, M.; Iacobucci, G.; Backhaus, M.; Hügging, Fabian; Krüger, H.; Hemperek, T.; Obermann, T.; Wermes, N.; Garcia-Sciveres, M.; Quadt, A.; Weingarten, J.; George, M.; Grosse-Knetter, J.; Rieger, J.; Bates, R.; Blue, A.; Buttar, C.; Hynds, D.

    2014-11-01

    The high-voltage (HV-) CMOS pixel sensors offer several good properties: a fast charge collection by drift, the possibility to implement relatively complex CMOS in-pixel electronics and the compatibility with commercial processes. The sensor element is a deep n-well diode in a p-type substrate. The n-well contains CMOS pixel electronics. The main charge collection mechanism is drift in a shallow, high field region, which leads to a fast charge collection and a high radiation tolerance. We are currently evaluating the use of the high-voltage detectors implemented in 180 nm HV-CMOS technology for the high-luminosity ATLAS upgrade. Our approach is replacing the existing pixel and strip sensors with the CMOS sensors while keeping the presently used readout ASICs. By intelligence we mean the ability of the sensor to recognize a particle hit and generate the address information. In this way we could benefit from the advantages of the HV sensor technology such as lower cost, lower mass, lower operating voltage, smaller pitch, smaller clusters at high incidence angles. Additionally we expect to achieve a radiation hardness necessary for ATLAS upgrade. In order to test the concept, we have designed two HV-CMOS prototypes that can be readout in two ways: using pixel and strip readout chips. In the case of the pixel readout, the connection between HV-CMOS sensor and the readout ASIC can be established capacitively.

  4. Quality control on planar n-in-n pixel sensors — Recent progress of ATLAS planar pixel sensors

    International Nuclear Information System (INIS)

    To extend the physics reach of the Large Hadron Collider (LHC), upgrades to the accelerator are planned which will increase the peak luminosity by a factor 5–10. To cope with the increased occupancy and radiation damage, the ATLAS experiment plans to introduce an all-silicon inner tracker with the high luminosity upgrade (HL-LHC). To investigate the suitability of pixel sensors using the proven planar technology for the upgraded tracker, the ATLAS Upgrade Planar Pixel Sensor (PPS) R and D Project was established. Main areas of research are the performance of planar pixel sensors at highest fluences, the exploration of possibilities for cost reduction to enable the instrumentation of large areas, the achievement of slim or active edges to provide low geometric inefficiencies without the need for shingling of modules and the investigation of the operation of highly irradiated sensors at low thresholds to increase the efficiency. The Insertable b-layer (IBL) is the first upgrade project within the ATLAS experiment and will employ a new detector layer consisting of silicon pixel sensors, which were improved and prototyped in the framework of the planar pixel sensor R and D project. A special focus of this paper is the status of the development and testing of planar n-in-n pixel sensors including the quality control of the on-going series production and postprocessing of sensor wafers. A high yield of produced planar sensor wafers and FE-I4 double chip sensors after first steps of post-processing including under bump metallization and dicing is observed. -- Highlights: ► Prototypes of irradiated planar n-in-n sensors have been successfully tested under laboratory conditions. ► A quality assurance programme on the series production of planar sensors for the IBL has started. ► A high yield of double chip sensors during the series production is observed which are compatible to the specifications to this detector component.

  5. Radiation Damage of the ATLAS Pixel Sensors Using Leakage Current Measurement System

    CERN Document Server

    Gorelov, I; The ATLAS collaboration

    2013-01-01

    The current measurement system measures directly the leakage current in pixel sensors. The system is integrated with the ATLAS Pixel high voltage delivery system. The system runs as a monitor of a radiation damage of the pixel sensors. The leakage current data collected for the completed data taking period are analyzed. The recent status of the sensor's radiation damage and a comparison with the theoretical predictions are presented.

  6. Simulations of 3D-Si sensors for the innermost layer of the ATLAS pixel upgrade

    CERN Document Server

    Baselga, Marta; Quirion, David

    2016-01-01

    The LHC is expected to reach luminosities up to 3000fb-1 and the innermost layer of the ATLAS upgrade plans to cope with higher occupancy and to decrease the pixel size. 3D-Si sensors are a good candidate for the innermost layer of the ATLAS pixel upgrade since they exhibit good performance under high fluences and the new designs will have smaller pixel size to fulfill the electronics expectations. This paper reports TCAD simulations of the 3D-Si sensors designed at IMB-CNM with non passing-through columns that are being fabricated for the next innermost layer of the ATLAS pixel upgrade, shows the charge collection response before and after irradiation, and the response of 3D-Si sensors located at large $\\eta$ angles.

  7. Sensor studies of n+-in-n planar pixel sensors for the ATLAS upgrades

    International Nuclear Information System (INIS)

    The ATLAS experiment at the LHC is planning upgrades of its pixel detector to cope with the luminosity increase foreseen in the coming years within the transition from LHC to Super-LHC (SLHC/HL-LHC). Associated with an increase in instantaneous luminosity is a rise of the target integrated luminosity from 730 fb-1 to about 3000 fb-1 which directly translates into significantly higher radiation damage. These upgrades consist of the installation of a 4th pixel layer, the insertable b-layer IBL, with a mean sensor radius of only 32 mm from the beam axis, before 2016/17. In addition, the complete pixel detector will be exchanged before 2020/21. Being very close to the beam, the radiation damage of the IBL sensors might be as high as 5.1015neqcm-2 at their end-of-life. The total fluence of the innermost pixel layer after the SLHC upgrade might even reach 2.1016neqcm-2. We have performed systematic measurements of planar pixel detectors based on the current ATLAS readout chip FE-I3 and obtained first experience with the new IBL readout chip FE-I4. First results will be presented.

  8. Test Beam Results of 3D Silicon Pixel Sensors for the ATLAS upgrade

    CERN Document Server

    Grenier, P; Barbero, M; Bates, R; Bolle, E; Borri, M; Boscardin, M; Buttar, C; Capua, M; Cavalli-Sforza, M; Cobal, M; Cristofoli, A; Dalla Betta, G F; Darbo, G; Da Via, C; Devetak, E; DeWilde, B; Di Girolamo, B; Dobos, D; Einsweiler, K; Esseni, D; Fazio, S; Fleta, C; Freestone, J; Gallrapp, C; Garcia-Sciveres, M; Gariano, G; Gemme, C; Giordani, M P; Gjersdal, H; Grinstein, S; Hansen, T; Hansen, T E; Hansson, P; Hasi, J; Helle, K; Hoeferkamp, M; Hugging, F; Jackson, P; Jakobs, K; Kalliopuska, J; Karagounis, M; Kenney, C; Köhler, M; Kocian, M; Kok, A; Kolya, S; Korokolov, I; Kostyukhin, V; Krüger, H; La Rosa, A; Lai, C H; Lietaer, N; Lozano, M; Mastroberardino, A; Micelli, A; Nellist, C; Oja, A; Oshea, V; Padilla, C; Palestri, P; Parker, S; Parzefall, U; Pater, J; Pellegrini, G; Pernegger, H; Piemonte, C; Pospisil, S; Povoli, M; Roe, S; Rohne, O; Ronchin, S; Rovani, A; Ruscino, E; Sandaker, H; Seidel, S; Selmi, L; Silverstein, D; Sjøbaek, K; Slavicek, T; Stapnes, S; Stugu, B; Stupak, J; Su, D; Susinno, G; Thompson, R; Tsung, J W; Tsybychev, D; Watts, S J; Wermes, N; Young, C; Zorzi, N

    2011-01-01

    Results on beam tests of 3D silicon pixel sensors aimed at the ATLAS Insertable-B-Layer and High Luminosity LHC (HL-LHC)) upgrades are presented. Measurements include charge collection, tracking efficiency and charge sharing between pixel cells, as a function of track incident angle, and were performed with and without a 1.6 T magnetic field oriented as the ATLAS Inner Detector solenoid field. Sensors were bump bonded to the front-end chip currently used in the ATLAS pixel detector. Full 3D sensors, with electrodes penetrating through the entire wafer thickness and active edge, and double-sided 3D sensors with partially overlapping bias and read-out electrodes were tested and showed comparable performance.

  9. Test beam results of 3D silicon pixel sensors for the ATLAS upgrade

    International Nuclear Information System (INIS)

    Results on beam tests of 3D silicon pixel sensors aimed at the ATLAS Insertable B-Layer and High Luminosity LHC (HL-LHC) upgrades are presented. Measurements include charge collection, tracking efficiency and charge sharing between pixel cells, as a function of track incident angle, and were performed with and without a 1.6 T magnetic field oriented as the ATLAS inner detector solenoid field. Sensors were bump-bonded to the front-end chip currently used in the ATLAS pixel detector. Full 3D sensors, with electrodes penetrating through the entire wafer thickness and active edge, and double-sided 3D sensors with partially overlapping bias and read-out electrodes were tested and showed comparable performance.

  10. Achievements of the ATLAS Upgrade Planar Pixel Sensors R&D Project

    CERN Document Server

    Nellist, C

    2015-01-01

    In the framework of the HL-LHC upgrade, the ATLAS experiment plans to introduce an all-silicon inner tracker to cope with the elevated occupancy. To investigate the suitability of pixel sensors using the proven planar technology for the upgraded tracker, the ATLAS Planar Pixel Sensor R&D Project (PPS) was established comprising 19 institutes and more than 90 scientists. The paper provides an overview of the research and development project and highlights accomplishments, among them: beam test results with planar sensors up to innermost layer fluences (> 10^16 n_eq cm^2); measurements obtained with irradiated thin edgeless n-in-p pixel assemblies; recent studies of the SCP technique to obtain almost active edges by postprocessing already existing sensors based on scribing, cleaving and edge passivation; an update on prototyping efforts for large areas: sensor design improvements and concepts for low-cost hybridisation; comparison between Secondary Ion Mass Spectrometry results and TCAD simulations. Togethe...

  11. Study of planar pixel sensors hardener to radiations for the upgrade of the ATLAS vertex detector

    International Nuclear Information System (INIS)

    In this work, we present a study, using TCAD (Technology Computer-Assisted Design) simulation, of the possible methods of designing planar pixel sensors by reducing their inactive area and improving their radiation hardness for use in the Insertable B-Layer (IBL) project and for SLHC upgrade phase for the ATLAS experiment. Different physical models available have been studied to develop a coherent model of radiation damage in silicon that can be used to predict silicon pixel sensor behavior after exposure to radiation. The Multi-Guard Ring Structure, a protection structure used in pixel sensor design was studied to obtain guidelines for the reduction of inactive edges detrimental to detector operation while keeping a good sensor behavior through its lifetime in the ATLAS detector. A campaign of measurement of the sensor process parameters and electrical behavior to validate and calibrate the TCAD simulation models and results are also presented. A model for diode charge collection in highly irradiated environment was developed to explain the high charge collection observed in highly irradiated devices. A simple planar pixel sensor digitization model to be used in test beam and full detector system is detailed. It allows for easy comparison between experimental data and prediction by the various radiation damage models available. The digitizer has been validated using test beam data for unirradiated sensors and can be used to produce the first full scale simulation of the ATLAS detector with the IBL that include sensor effects such as slim edge and thinning of the sensor. (author)

  12. Testbeam Measurements with Pixel Sensors for the ATLAS Insertable b-Layer Project

    CERN Document Server

    George, Matthias; Quadt, Arnulf

    During the current long machine shutdown of the Large Hadron Collider (LHC) at CERN (Geneva), the innermost part of the ATLAS experiment, the pixel detector, is upgraded. The existing ATLAS pixel system is equipped with silicon sensors, organized in three barrel layers and three end cap disks on either side. To cope with the higher instantaneous luminosity in the future and for compensation of radiation damages due to past and near future running time of the experiment, a new fourth pixel detector layer is inserted into the existing system. This additional pixel layer is called “Insertable b-Layer” (IBL). The IBL is a detector system, based on silicon pixel sensors. Due to the smaller radius, compared to all other detectors of the ATLAS experiment, it has to be more radiation tolerant, than e.g. the current pixel layers. Furthermore, a reduced pixel size is necessary to cope with the expected higher particle flux. During the planning phase for the IBL upgrade, three different sensor technologies were comp...

  13. Simulations of planar pixel sensors for the ATLAS high luminosity upgrade

    OpenAIRE

    Calderini, G.; Benoit, M; Dinu, N.; Lounis, A.; Marchiori, G.

    2011-01-01

    A physics-based device simulation was used to study the charge carrier distribution and the electric field configuration inside simplified two-dimensional models for pixel layouts based on the ATLAS pixel sensor. In order to study the behavior of such detectors under different levels of irradiation, a three-level defect model was implemented into the simulation. Using these models, the number of guard rings, the dead edge width and the detector thickness were modified to investigate their inf...

  14. Novel silicon n-in-p pixel sensors for the future ATLAS upgrades

    International Nuclear Information System (INIS)

    In view of the LHC upgrade phases towards HL-LHC the ATLAS experiment plans to upgrade the inner detector with an all silicon system. The n-in-p silicon technology is a promising candidate for the pixel upgrade thanks to its radiation hardness and cost effectiveness that allow for enlarging the area instrumented with pixel detectors. We present the characterization and performance of novel n-in-p planar pixel sensors produced by CiS (Germany) connected by bump bonding to the ATLAS readout chip FE-I3. These results are obtained before and after irradiation up to a fluence of 10161-MeV neqcm−2, and prove the operability of this kind of sensors in the harsh radiation environment foreseen for the pixel system at HL-LHC. We also present an overview of the new pixel production, which is on-going at CiS for sensors compatible with the new ATLAS readout chip FE-I4

  15. Novel Silicon n-in-p Pixel Sensors for the future ATLAS Upgrades

    CERN Document Server

    La Rosa, A; Macchiolo, A; Nisius, R; Pernegger, H; Richter,R H; Weigell, P

    2013-01-01

    In view of the LHC upgrade phases towards HL-LHC the ATLAS experiment plans to upgrade the Inner Detector with an all silicon system. The n-in-p silicon technology is a promising candidate for the pixel upgrade thanks to its radiation hardness and cost eectiveness, that allow for enlarging the area instrumented with pixel detectors. We present the characterization and performance of novel n-in-p planar pixel sensors produced by CiS (Germany) connected by bump bonding to the ATLAS readout chip FE-I3. These results are obtained before and after irradiation up to a fluence of 1016 1-MeV $n_{eq}cm^{-2}$, and prove the operability of this kind of sensors in the harsh radiation environment foreseen for the pixel system at HL-LHC. We also present an overview of the new pixel production, which is on-going at CiS for sensors compatible with the new ATLAS readout chip FE-I4.

  16. Novel silicon n-in-p pixel sensors for the future ATLAS upgrades

    Science.gov (United States)

    La Rosa, A.; Gallrapp, C.; Macchiolo, A.; Nisius, R.; Pernegger, H.; Richter, R. H.; Weigell, P.

    2013-08-01

    In view of the LHC upgrade phases towards HL-LHC the ATLAS experiment plans to upgrade the inner detector with an all silicon system. The n-in-p silicon technology is a promising candidate for the pixel upgrade thanks to its radiation hardness and cost effectiveness that allow for enlarging the area instrumented with pixel detectors. We present the characterization and performance of novel n-in-p planar pixel sensors produced by CiS (Germany) connected by bump bonding to the ATLAS readout chip FE-I3. These results are obtained before and after irradiation up to a fluence of 10161-MeV neq cm-2, and prove the operability of this kind of sensors in the harsh radiation environment foreseen for the pixel system at HL-LHC. We also present an overview of the new pixel production, which is on-going at CiS for sensors compatible with the new ATLAS readout chip FE-I4.

  17. Slim edge studies, design and quality control of planar ATLAS IBL pixel sensors

    International Nuclear Information System (INIS)

    One of the four large experiments at the LHC at CERN is the ATLAS detector, a multi purpose detector. Its pixel detector, composed of three layers, is the innermost part of the tracker. As it is closest to the interaction point, it represents a basic part of the track reconstruction. Besides the requested high resolution one main requirement is the radiation hardness. In the coming years the radiation damage will cause deteriorations of the detector performance. With the planned increase of the luminosity, especially after the upgrade to the High Luminosity LHC, this radiation damage will be even intensified. This circumstance necessitates a new pixel detector featuring improved radiation hard sensors and read-out chips. The present shutdown of the LHC is already utilized to insert an additional b-layer (IBL) into the existing ATLAS pixel detector. The current n-in-n pixel sensor design had to be adapted to the new read-out chip and the module specifications. The new stave geometry requests a reduction of the inactive sensor edge. In a prototype wafer production all modifications have been implemented. The sensor quality control was supervised which led to the decision of the final sensor thickness. In order to evaluate the performance of the sensor chip assemblies with an innovative slim edge design, they have been operated in test beam setups before and after irradiation. Furthermore, the quality control of the planar IBL sensor wafer production was supervised from the stage of wafer delivery to that before the flip chip process to ensure a sufficient amount of functional sensors for the module production.

  18. Slim edge studies, design and quality control of planar ATLAS IBL pixel sensors

    Energy Technology Data Exchange (ETDEWEB)

    Wittig, Tobias

    2013-05-08

    One of the four large experiments at the LHC at CERN is the ATLAS detector, a multi purpose detector. Its pixel detector, composed of three layers, is the innermost part of the tracker. As it is closest to the interaction point, it represents a basic part of the track reconstruction. Besides the requested high resolution one main requirement is the radiation hardness. In the coming years the radiation damage will cause deteriorations of the detector performance. With the planned increase of the luminosity, especially after the upgrade to the High Luminosity LHC, this radiation damage will be even intensified. This circumstance necessitates a new pixel detector featuring improved radiation hard sensors and read-out chips. The present shutdown of the LHC is already utilized to insert an additional b-layer (IBL) into the existing ATLAS pixel detector. The current n-in-n pixel sensor design had to be adapted to the new read-out chip and the module specifications. The new stave geometry requests a reduction of the inactive sensor edge. In a prototype wafer production all modifications have been implemented. The sensor quality control was supervised which led to the decision of the final sensor thickness. In order to evaluate the performance of the sensor chip assemblies with an innovative slim edge design, they have been operated in test beam setups before and after irradiation. Furthermore, the quality control of the planar IBL sensor wafer production was supervised from the stage of wafer delivery to that before the flip chip process to ensure a sufficient amount of functional sensors for the module production.

  19. Evaluation of the breakdown behaviour of ATLAS silicon pixel sensors after partial guard-ring removal

    International Nuclear Information System (INIS)

    To avoid geometrical inefficiencies in the ATLAS pixel detector, the concept of shingling is used up to now in the barrel section. For the upgrades of ATLAS, it is desired to avoid this as it increases the volume and material budget of the pixel layers and complicates the cooling. A direct planar edge-to-edge arrangement of pixel modules has not been possible in the past due to about 1100μm of inactive edge composed of approximately 600μm of guard rings and 500μm of safety margin. In this work, the safety margin and guard rings of ATLAS SingleChip sensors were cut at different positions using a standard diamond dicing saw and irradiated afterwards to explore the breakdown behaviour and the leakage current development. It is found that the inactive edge can be reduced to about 400μm of guard rings with almost no reduction in pre-irradiation testability and leakage current performance. This is in particular important for the insertable b-layer upgrade of ATLAS (IBL) where inactive edges of less than 450μm width are required.

  20. Evaluation of the breakdown behaviour of ATLAS silicon pixel sensors after partial guard-ring removal

    Science.gov (United States)

    Goessling, C.; Klingenberg, R.; Muenstermann, D.; Wittig, T.

    2010-12-01

    To avoid geometrical inefficiencies in the ATLAS pixel detector, the concept of shingling is used up to now in the barrel section. For the upgrades of ATLAS, it is desired to avoid this as it increases the volume and material budget of the pixel layers and complicates the cooling. A direct planar edge-to-edge arrangement of pixel modules has not been possible in the past due to about 1100 μm of inactive edge composed of approximately 600 μm of guard rings and 500 μm of safety margin. In this work, the safety margin and guard rings of ATLAS SingleChip sensors were cut at different positions using a standard diamond dicing saw and irradiated afterwards to explore the breakdown behaviour and the leakage current development. It is found that the inactive edge can be reduced to about 400 μm of guard rings with almost no reduction in pre-irradiation testability and leakage current performance. This is in particular important for the insertable b-layer upgrade of ATLAS (IBL) where inactive edges of less than 450 μm width are required.

  1. Evaluation of the breakdown behaviour of ATLAS silicon pixel sensors after partial guard-ring removal

    Energy Technology Data Exchange (ETDEWEB)

    Goessling, C.; Klingenberg, R. [Lehrstuhl fuer Experimentelle Physik IV, TU Dortmund, 44221 Dortmund (Germany); Muenstermann, D., E-mail: Daniel.Muenstermann@TU-Dortmund.d [Lehrstuhl fuer Experimentelle Physik IV, TU Dortmund, 44221 Dortmund (Germany); Wittig, T. [Lehrstuhl fuer Experimentelle Physik IV, TU Dortmund, 44221 Dortmund (Germany)

    2010-12-11

    To avoid geometrical inefficiencies in the ATLAS pixel detector, the concept of shingling is used up to now in the barrel section. For the upgrades of ATLAS, it is desired to avoid this as it increases the volume and material budget of the pixel layers and complicates the cooling. A direct planar edge-to-edge arrangement of pixel modules has not been possible in the past due to about 1100{mu}m of inactive edge composed of approximately 600{mu}m of guard rings and 500{mu}m of safety margin. In this work, the safety margin and guard rings of ATLAS SingleChip sensors were cut at different positions using a standard diamond dicing saw and irradiated afterwards to explore the breakdown behaviour and the leakage current development. It is found that the inactive edge can be reduced to about 400{mu}m of guard rings with almost no reduction in pre-irradiation testability and leakage current performance. This is in particular important for the insertable b-layer upgrade of ATLAS (IBL) where inactive edges of less than 450{mu}m width are required.

  2. Recent results of the ATLAS upgrade planar pixel sensors R&D project

    Science.gov (United States)

    Weigell, Philipp

    2013-12-01

    To extend the physics reach of the LHC experiments, several upgrades to the accelerator complex are planned, culminating in the HL-LHC, which eventually leads to an increase of the peak luminosity by a factor of five to ten compared to the LHC design value. To cope with the higher occupancy and radiation damage also the LHC experiments will be upgraded. The ATLAS Planar Pixel Sensor R&D Project is an international collaboration of 17 institutions and more than 80 scientists, exploring the feasibility of employing planar pixel sensors for this scenario. Depending on the radius, different pixel concepts are investigated using laboratory and beam test measurements. At small radii the extreme radiation environment and strong space constraints are addressed with very thin pixel sensors active thickness in the range of (75-150) μm, and the development of slim as well as active edges. At larger radii the main challenge is the cost reduction to allow for instrumenting the large area of (7-10) m2. To reach this goal the pixel productions are being transferred to 6 in production lines and more cost-efficient and industrialised interconnection techniques are investigated. Additionally, the n-in-p technology is employed, which requires less production steps since it relies on a single-sided process. An overview of the recent accomplishments obtained within the ATLAS Planar Pixel Sensor R&D Project is given. The performance in terms of charge collection and tracking efficiency, obtained with radioactive sources in the laboratory and at beam tests, is presented for devices built from sensors of different vendors connected to either the present ATLAS read-out chip FE-I3 or the new Insertable B-Layer read-out chip FE-I4. The devices, with a thickness varying between 75 μm and 300 μm, were irradiated to several fluences up to 2×1016 neq/cm2. Finally, the different approaches followed inside the collaboration to achieve slim or active edges for planar pixel sensors are presented.

  3. Recent Results of the ATLAS Upgrade Planar Pixel Sensors R&D Project

    CERN Document Server

    Weigell, Philipp

    2013-01-01

    To cope with the higher occupancy and radiation damage at the HL-LHC also the LHC experiments will be upgraded. The ATLAS Planar Pixel Sensor R&D Project (PPS) is an international collaboration of 17 institutions and more than 80 scientists, exploring the feasibility of employing planar pixel sensors for this scenario. Depending on the radius, different pixel concepts are investigated using laboratory and beam test measurements. At small radii the extreme radiation environment and strong space constraints are addressed with very thin pixel sensors active thickness in the range of (75-150) mum, and the development of slim as well as active edges. At larger radii the main challenge is the cost reduction to allow for instrumenting the large area of (7-10) m^2. To reach this goal the pixel productions are being transferred to 6 inch production lines. Additionally, investigated are more cost-efficient and industrialised interconnection techniques as well as the n-in-p technology, which, being a single-sided pr...

  4. Simulations of planar pixel sensors for the ATLAS high luminosity upgrade

    CERN Document Server

    Calderini, G; Dinu, N; Lounis, A; Marchiori, G

    2011-01-01

    A physics-based device simulation was used to study the charge carrier distribution and the electric field configuration inside simplified two-dimensional models for pixel layouts based on the ATLAS pixel sensor. In order to study the behavior of such detectors under different levels of irradiation, a three-level defect model was implemented into the simulation. Using these models, the number of guard rings, the dead edge width and the detector thickness were modified to investigate their influence on the detector depletion at the edge and on its internal electric field distribution in order to optimize the layout parameters. Simulations indicate that the number of guard rings can be reduced by a few hundred microns with respect to the layout used for the present ATLAS sensors, with a corresponding extension of the active area of the sensors. A study of the inter-pixel capacitance and of the capacitance between the implants and the high-voltage contact as a function of several parameters affecting the geometr...

  5. Analysis methods of testbeam data of irradiated ATLAS Planar Pixel Sensors

    International Nuclear Information System (INIS)

    The ATLAS Pixel detector is the innermost subdetector of the ATLAS-Experiment at CERN. The development of new sensor technologies is going on as detector-upgrades are foreseen to cope with higher fluences and more pile-up-events after accelerator upgrades (SLHC). For testing properties of sensors, testbeams are used. Beam-telescopes such as the EUDET-Telescope have been used for measuring the exact position of beam-tracks to determine the properties of different sensor technologies. Several sensors with different designs (e.g. slim edges) were read-out in testbeam after irradiation at differing fluences (up to 2.1016 neqcm-2) and voltages (up to 1500 V) to observe the performance of the sensors under conditions up to the end-lifetime of the ATLAS detector. The reconstruction chain of the so called Eutelescope framework including adaptions and the evaluation of the reconstructed data are presented. Typical results including hit- and charge-efficiency plots are shown and interpreted.

  6. Thin n-in-p planar pixel sensors and active edge sensors for the ATLAS upgrade at HL-LHC

    OpenAIRE

    Terzo, S.; Macchiolo, A; Nisius, R.; Paschen, B.

    2014-01-01

    Silicon pixel modules employing n-in-p planar sensors with an active thickness of 200 $\\mu$m, produced at CiS, and 100-200 $\\mu$m thin active/slim edge sensor devices, produced at VTT in Finland have been interconnected to ATLAS FE-I3 and FE-I4 read-out chips. The thin sensors are designed for high energy physics collider experiments to ensure radiation hardness at high fluences. Moreover, the active edge technology of the VTT production maximizes the sensitive region of the assembly, allowin...

  7. Thin n-in-p planar pixel sensors and active edge sensors for the ATLAS upgrade at HL-LHC

    Science.gov (United States)

    Terzo, S.; Macchiolo, A.; Nisius, R.; Paschen, B.

    2014-12-01

    Silicon pixel modules employing n-in-p planar sensors with an active thickness of 200 μm, produced at CiS, and 100-200 μm thin active/slim edge sensor devices, produced at VTT in Finland have been interconnected to ATLAS FE-I3 and FE-I4 read-out chips. The thin sensors are designed for high energy physics collider experiments to ensure radiation hardness at high fluences. Moreover, the active edge technology of the VTT production maximizes the sensitive region of the assembly, allowing for a reduced overlap of the modules in the pixel layer close to the beam pipe. The CiS production includes also four chip sensors according to the module geometry planned for the outer layers of the upgraded ATLAS pixel detector to be operated at the HL-LHC. The modules have been characterized using radioactive sources in the laboratory and with high precision measurements at beam tests to investigate the hit efficiency and charge collection properties at different bias voltages and particle incidence angles. The performance of the different sensor thicknesses and edge designs are compared before and after irradiation up to a fluence of 1.4 × 1016 neq/cm2.

  8. Thin n-in-p planar pixel sensors and active edge sensors for the ATLAS upgrade at HL-LHC

    International Nuclear Information System (INIS)

    Silicon pixel modules employing n-in-p planar sensors with an active thickness of 200 μm, produced at CiS, and 100-200 μm thin active/slim edge sensor devices, produced at VTT in Finland have been interconnected to ATLAS FE-I3 and FE-I4 read-out chips. The thin sensors are designed for high energy physics collider experiments to ensure radiation hardness at high fluences. Moreover, the active edge technology of the VTT production maximizes the sensitive region of the assembly, allowing for a reduced overlap of the modules in the pixel layer close to the beam pipe. The CiS production includes also four chip sensors according to the module geometry planned for the outer layers of the upgraded ATLAS pixel detector to be operated at the HL-LHC. The modules have been characterized using radioactive sources in the laboratory and with high precision measurements at beam tests to investigate the hit efficiency and charge collection properties at different bias voltages and particle incidence angles. The performance of the different sensor thicknesses and edge designs are compared before and after irradiation up to a fluence of 1.4 × 1016 neq/cm2

  9. Thin n-in-p planar pixel sensors and active edge sensors for the ATLAS upgrade at HL-LHC

    CERN Document Server

    Terzo, S; Nisius, R; Paschen, B

    2014-01-01

    Silicon pixel modules employing n-in-p planar sensors with an active thickness of 200 $\\mu$m, produced at CiS, and 100-200 $\\mu$m thin active/slim edge sensor devices, produced at VTT in Finland have been interconnected to ATLAS FE-I3 and FE-I4 read-out chips. The thin sensors are designed for high energy physics collider experiments to ensure radiation hardness at high fluences. Moreover, the active edge technology of the VTT production maximizes the sensitive region of the assembly, allowing for a reduced overlap of the modules in the pixel layer close to the beam pipe. The CiS production includes also four chip sensors according to the module geometry planned for the outer layers of the upgraded ATLAS pixel detector to be operated at the HL-LHC. The modules have been characterized using radioactive sources in the laboratory and with high precision measurements at beam tests to investigate the hit efficiency and charge collection properties at different bias voltages and particle incidence angles. The perfo...

  10. Beam test studies of 3D pixel sensors irradiated non-uniformly for the ATLAS forward physics detector

    International Nuclear Information System (INIS)

    Pixel detectors with cylindrical electrodes that penetrate the silicon substrate (so called 3D detectors) offer advantages over standard planar sensors in terms of radiation hardness, since the electrode distance is decoupled from the bulk thickness. In recent years significant progress has been made in the development of 3D sensors, which culminated in the sensor production for the ATLAS Insertable B-Layer (IBL) upgrade carried out at CNM (Barcelona, Spain) and FBK (Trento, Italy). Based on this success, the ATLAS Forward Physics (AFP) experiment has selected the 3D pixel sensor technology for the tracking detector. The AFP project presents a new challenge due to the need for a reduced dead area with respect to IBL, and the in-homogeneous nature of the radiation dose distribution in the sensor. Electrical characterization of the first AFP prototypes and beam test studies of 3D pixel devices irradiated non-uniformly are presented in this paper

  11. Beam test studies of 3D pixel sensors irradiated non-uniformly for the ATLAS forward physics detector

    Energy Technology Data Exchange (ETDEWEB)

    Grinstein, S., E-mail: sgrinstein@ifae.es [ICREA and Institut de Física d' Altes Energies (IFAE), Barcelona (Spain); Baselga, M. [Centro Nacional de Microelectronica, CNM-IMB (CSIC), Barcelona (Spain); Boscardin, M. [Fondazione Bruno Kessler, FBK-CMM, Trento (Italy); Christophersen, M. [U.S. Naval Research Laboratory, Washington (United States); Da Via, C. [School of Physics and Astronomy, University of Manchester, Manchester (United Kingdom); Dalla Betta, G.-F. [Universita degli Studi di Trento and INFN, Trento (Italy); Darbo, G. [INFN Sezione di Genova, Genova (Italy); Fadeyev, V. [Santa Cruz Institute for Particle Physics, University of California, Santa Cruz (United States); Fleta, C. [Centro Nacional de Microelectronica, CNM-IMB (CSIC), Barcelona (Spain); Gemme, C. [Universita degli Studi di Trento and INFN, Trento (Italy); Grenier, P. [SLAC National Accelerator Laboratory, Menlo Park (United States); Jimenez, A.; Lopez, I.; Micelli, A. [ICREA and Institut de Física d' Altes Energies (IFAE), Barcelona (Spain); Nelist, C. [INFN Sezione di Genova, Genova (Italy); Parker, S. [University of Hawaii, c/o Lawrence Berkeley Laboratory, Berkeley (United States); Pellegrini, G. [Centro Nacional de Microelectronica, CNM-IMB (CSIC), Barcelona (Spain); Phlips, B. [U.S. Naval Research Laboratory, Washington (United States); Pohl, D.-L. [University of Bonn, Bonn (Germany); Sadrozinski, H.F.-W. [Santa Cruz Institute for Particle Physics, University of California, Santa Cruz (United States); and others

    2013-12-01

    Pixel detectors with cylindrical electrodes that penetrate the silicon substrate (so called 3D detectors) offer advantages over standard planar sensors in terms of radiation hardness, since the electrode distance is decoupled from the bulk thickness. In recent years significant progress has been made in the development of 3D sensors, which culminated in the sensor production for the ATLAS Insertable B-Layer (IBL) upgrade carried out at CNM (Barcelona, Spain) and FBK (Trento, Italy). Based on this success, the ATLAS Forward Physics (AFP) experiment has selected the 3D pixel sensor technology for the tracking detector. The AFP project presents a new challenge due to the need for a reduced dead area with respect to IBL, and the in-homogeneous nature of the radiation dose distribution in the sensor. Electrical characterization of the first AFP prototypes and beam test studies of 3D pixel devices irradiated non-uniformly are presented in this paper.

  12. Beam Test Studies of 3D Pixel Sensors Irradiated Non-Uniformly for the ATLAS Forward Physics Detector

    CERN Document Server

    Grinstein, S; Boscardin, M; Christophersen, M; Da Via, C; Betta, G -F Dalla; Darbo, G; Fadeyev, V; Fleta, C; Gemme, C; Grenier, P; Jimenez, A; Lopez, I; Micelli, A; Nelist, C; Parker, S; Pellegrini, G; Phlips, B; Pohl, D L; Sadrozinski, H F -W; Sicho, P; Tsiskaridze, S

    2013-01-01

    Pixel detectors with cylindrical electrodes that penetrate the silicon substrate (so called 3D detectors) offer advantages over standard planar sensors in terms of radiation hardness, since the electrode distance is decoupled from the bulk thickness. In recent years significant progress has been made in the development of 3D sensors, which culminated in the sensor production for the ATLAS Insertable B-Layer (IBL) upgrade carried out at CNM (Barcelona, Spain) and FBK (Trento, Italy). Based on this success, the ATLAS Forward Physics (AFP) experiment has selected the 3D pixel sensor technology for the tracking detector. The AFP project presents a new challenge due to the need for a reduced dead area with respect to IBL, and the in-homogeneous nature of the radiation dose distribution in the sensor. Electrical characterization of the first AFP prototypes and beam test studies of 3D pixel devices irradiated non-uniformly are presented in this paper.

  13. Status of the ATLAS pixel detector

    CERN Document Server

    Saavedra Aldo, F

    2005-01-01

    The ATLAS pixel detector is currently being constructed and will be installed in 2006 to be ready for commissioning at the Large Hadron Collider. The complete pixel detector is composed of three concentric barrels and six disks that are populated by 1744 ATLAS Pixel modules. The main components of the pixel module are the readout electronics and the silicon sensor whose active region is instrumented with rectangular pixels. The module has been designed to be able to survive 10 years of operation within the ATLAS detector. A brief description of the pixel detector will be presented with results and problems encountered during the production stage.

  14. The ATLAS pixel detector

    OpenAIRE

    Cristinziani, M.

    2007-01-01

    After a ten years planning and construction phase, the ATLAS pixel detector is nearing its completion and is scheduled to be integrated into the ATLAS detector to take data with the first LHC collisions in 2007. An overview of the construction is presented with particular emphasis on some of the major and most recent problems encountered and solved.

  15. Development of Edgeless n-on-p Planar Pixel Sensors for future ATLAS Upgrades

    CERN Document Server

    Bomben, M; Boscardin, M; Bosisio, L; Calderini, G; Chauveau, J; Giacomini, G; La Rosa, A; Marchori, G; Zorzi, N

    2012-01-01

    The development of n-on-p "edgeless" planar pixel sensors being fabricated at FBK (Trento, Italy), aimed at the upgrade of the ATLAS Inner Detector for the High Luminosity phase of the Large Hadron Collider (HL-LHC), is reported. A characterizing feature of the devices is the reduced dead area at the edge, achieved by adopting the "active edge" technology, based on a deep etched trench, suitably doped to make an ohmic contact to the substrate. The project is presented, along with the active edge process, the sensor design for this first n-on-p production and a selection of simulation results, including the expected charge collection efficiency after radiation fluence of $1 \\times 10^{15} {\\rm n_{eq}}/{\\rm cm}^2$ comparable to those expected at HL-LHC (about ten years of running, with an integrated luminosity of 3000 fb$^{-1}$) for the outer pixel layers. We show that, after irradiation, more than 50% of the signal should be collected in the edge region; this confirms the validity of the active edge approach.

  16. Development of Edgeless n-on-p Planar Pixel Sensors for future ATLAS Upgrades

    CERN Document Server

    Bomben, M

    2013-01-01

    The development of n-on-p “edgeless” planar pixel sensors being fabricated at FBK (Trento, Italy), aimed at the upgrade of the ATLAS Inner Detector for the High Luminosity phase of the Large Hadron Collider (HL-LHC), is reported. A characterizing feature of the devices is the reduced dead area at the edge, achieved by adopting the “active edge” technology, based on a deep etched trench, suitably doped to make an ohmic contact to the substrate. The project is presented, along with the active edge process, the sensor design for this first n-on-p production and a selection of simulation results, including the expected charge collection efficiency after radiation fluence of View the MathML source1×1015neq/cm2 comparable to those expected at HL-LHC (about ten years of running, with an integrated luminosity of 3000 fb−1) for the outer pixel layers. We show that, after irradiation and at a bias voltage of 500 V, more than 50% of the signal should be collected in the edge region; this confirms the validity...

  17. Development of edgeless n-on-p planar pixel sensors for future ATLAS upgrades

    Science.gov (United States)

    Bomben, Marco; Bagolini, Alvise; Boscardin, Maurizio; Bosisio, Luciano; Calderini, Giovanni; Chauveau, Jacques; Giacomini, Gabriele; La Rosa, Alessandro; Marchiori, Giovanni; Zorzi, Nicola

    2013-06-01

    The development of n-on-p "edgeless" planar pixel sensors being fabricated at FBK (Trento, Italy), aimed at the upgrade of the ATLAS Inner Detector for the High Luminosity phase of the Large Hadron Collider (HL-LHC), is reported. A characterizing feature of the devices is the reduced dead area at the edge, achieved by adopting the "active edge" technology, based on a deep etched trench, suitably doped to make an ohmic contact to the substrate. The project is presented, along with the active edge process, the sensor design for this first n-on-p production and a selection of simulation results, including the expected charge collection efficiency after radiation fluence of 1×1015 neq/cm2 comparable to those expected at HL-LHC (about ten years of running, with an integrated luminosity of 3000 fb-1) for the outer pixel layers. We show that, after irradiation and at a bias voltage of 500 V, more than 50% of the signal should be collected in the edge region; this confirms the validity of the active edge approach.

  18. Active Pixel Sensors in ams H18/H35 HV-CMOS Technology for the ATLAS HL-LHC Upgrade

    CERN Document Server

    Ristic, Branislav

    2016-01-01

    Deep sub micron HV-CMOS processes offer the opportunity for sensors built by industry standard techniques while being HV tolerant, making them good candidates for drift-based, fast collecting, thus radiation-hard pixel detectors. For the upgrade of the ATLAS Pixel Detector towards the HL-LHC requirements, active pixel sensors in HV-CMOS technology were investigated. These implement amplifier and discriminator stages directly in insulating deep n-wells, which also act as collecting electrodes. The deep n-wells allow for bias voltages up to 150V leading to a depletion depth of several 10um. Prototype sensors in the ams H18 180nm and H35 350nm HV-CMOS processes have been manufactured, acting as a potential drop-in replacement for the current ATLAS Pixel sensors, thus leaving higher level processing such as trigger handling to dedicated read-out chips. Sensors were thoroughly tested in lab measurements as well as in testbeam experiments. Irradiation with X-rays and protons revealed a tolerance to ionizing doses o...

  19. 3D silicon sensors: Design, large area production and quality assurance for the ATLAS IBL pixel detector upgrade

    International Nuclear Information System (INIS)

    3D silicon sensors, where electrodes penetrate the silicon substrate fully or partially, have successfully been fabricated in different processing facilities in Europe and USA. The key to 3D fabrication is the use of plasma micro-machining to etch narrow deep vertical openings allowing dopants to be diffused in and form electrodes of pin junctions. Similar openings can be used at the sensor's edge to reduce the perimeter's dead volume to as low as ∼4 μm. Since 2009 four industrial partners of the 3D ATLAS R and D Collaboration started a joint effort aimed at one common design and compatible processing strategy for the production of 3D sensors for the LHC Upgrade and in particular for the ATLAS pixel Insertable B-Layer (IBL). In this project, aimed for installation in 2013, a new layer will be inserted as close as 3.4 cm from the proton beams inside the existing pixel layers of the ATLAS experiment. The detector proximity to the interaction point will therefore require new radiation hard technologies for both sensors and front end electronics. The latter, called FE-I4, is processed at IBM and is the biggest front end of this kind ever designed with a surface of ∼4 cm2. The performance of 3D devices from several wafers was evaluated before and after bump-bonding. Key design aspects, device fabrication plans and quality assurance tests during the 3D sensors prototyping phase are discussed in this paper.

  20. Development of thin sensors and a novel interconnection technology for the upgrade of the ATLAS pixel system

    Energy Technology Data Exchange (ETDEWEB)

    Beimforde, Michael

    2010-07-19

    To extend the discovery potential of the experiments at the LHC accelerator a two phase luminosity upgrade towards the super LHC (sLHC) with a maximum instantaneous luminosity of 10{sup 35}/cm{sup 2}s{sup 1} is planned. Retaining the reconstruction efficiency and spatial resolution of the ATLAS tracking detector at the sLHC, new pixel modules have to be developed that have a higher granularity, can be placed closer to the interaction point, and allow for a cost-efficient coverage of a larger pixel detector volume compared to the present one. The reduced distance to the interaction point calls for more compact modules that have to be radiation hard to supply a sufficient charge collection efficiency up to an integrated particle fluence equivalent to that of (1-2).10{sup 16} 1-MeV-neutrons per square centimeter (n{sub eq}/cm{sup 2}). Within this thesis a new module concept was partially realised and evaluated for the operation within an ATLAS pixel detector at the sLHC. This module concept utilizes a novel thin sensor production process for thin n-in-p silicon sensors which potentially allow for a higher radiation hardness at a reduced cost. Furthermore, the new 3D-integration technology ICV-SLID is explored which will allow for increasing the active area of the modules from 71% to about 90% and hence, for employing the modules in the innermost layer of the upgraded ATLAS pixel detector. A semiconductor simulation and measurements of irradiated test sensors are used to optimize the implantation parameters for the inter-pixel isolation of the thin sensors. These reduce the crosstalk between the pixel channels and should allow for operating the sensors during the whole runtime of the experiment without causing junction breakdowns. The characterization of the first production of sensors with active thicknesses of 75 {mu}m and 150 {mu}m proved that thin pixel sensors can be successfully produced with the new process technology. Thin pad sensors with a reduced inactive

  1. Development of thin sensors and a novel interconnection technology for the upgrade of the ATLAS pixel system

    International Nuclear Information System (INIS)

    To extend the discovery potential of the experiments at the LHC accelerator a two phase luminosity upgrade towards the super LHC (sLHC) with a maximum instantaneous luminosity of 1035/cm2s1 is planned. Retaining the reconstruction efficiency and spatial resolution of the ATLAS tracking detector at the sLHC, new pixel modules have to be developed that have a higher granularity, can be placed closer to the interaction point, and allow for a cost-efficient coverage of a larger pixel detector volume compared to the present one. The reduced distance to the interaction point calls for more compact modules that have to be radiation hard to supply a sufficient charge collection efficiency up to an integrated particle fluence equivalent to that of (1-2).1016 1-MeV-neutrons per square centimeter (neq/cm2). Within this thesis a new module concept was partially realised and evaluated for the operation within an ATLAS pixel detector at the sLHC. This module concept utilizes a novel thin sensor production process for thin n-in-p silicon sensors which potentially allow for a higher radiation hardness at a reduced cost. Furthermore, the new 3D-integration technology ICV-SLID is explored which will allow for increasing the active area of the modules from 71% to about 90% and hence, for employing the modules in the innermost layer of the upgraded ATLAS pixel detector. A semiconductor simulation and measurements of irradiated test sensors are used to optimize the implantation parameters for the inter-pixel isolation of the thin sensors. These reduce the crosstalk between the pixel channels and should allow for operating the sensors during the whole runtime of the experiment without causing junction breakdowns. The characterization of the first production of sensors with active thicknesses of 75 μm and 150 μm proved that thin pixel sensors can be successfully produced with the new process technology. Thin pad sensors with a reduced inactive edge demonstrate that the active sensor

  2. Performance of Edgeless Silicon Pixel Sensors on p-type substrate for the ATLAS High-Luminosity Upgrade

    CERN Document Server

    Bomben, Marco; Boscardin, Maurizio; Bosisio, Luciano; Calderini, Giovanni; Chauveau, Jacques; Ducourthial, Audrey; Giacomini, Gabriele; Marchiori, Giovanni; Zorzi, Nicola

    2016-01-01

    In view of the LHC upgrade phases towards the High Luminosity LHC (HL-LHC), the ATLAS experiment plans to upgrade the Inner Detector with an all-silicon system. The n-on-p silicon technology is a promising candidate to achieve a large area instrumented with pixel sensors, since it is radiation hard and cost effective. The paper reports on the performance of novel n-on-p edgeless planar pixel sensors produced by FBK-CMM, making use of the active trench for the reduction of the dead area at the periphery of the device. After discussing the sensor technology an overview of the first beam test results will be given.

  3. Development of Edgeless Silicon Pixel Sensors on p-type substrate for the ATLAS High-Luminosity Upgrade

    CERN Document Server

    Calderini, G; Bomben, M; Boscardin, M; Bosisio, L; Chauveau, J; Giacomini, G; La Rosa, A; Marchiori, G; Zorzi, N

    2014-01-01

    In view of the LHC upgrade for the high luminosity phase (HL-LHC), the ATLAS experiment is planning to replace the inner detector with an all-silicon system. The n-in-p bulk technology represents a valid solution for the modules of most of the layers, given the significant radiation hardness of this option and the reduced cost. The large area necessary to instrument the outer layers will demand to tile the sensors, a solution for which the inefficient region at the border of each sensor needs to be reduced to the minimum size. This paper reports on a joint R&D project by the ATLAS LPNHE Paris group and FBK Trento on a novel n-in-p edgeless planar pixel design, based on the deep-trench process available at FBK.

  4. Development of thin sensors and a novel interconnection technology for the upgrade of the ATLAS pixel system

    International Nuclear Information System (INIS)

    A new pixel module concept is presented utilizing thin sensors and a novel vertical integration technique for the ATLAS pixel detector in view of the foreseen LHC luminosity upgrades. A first set of pixel sensors with active thicknesses of 75 and 150μm has been produced from wafers of standard thickness using a thinning process developed at the Max-Planck-Institut Halbleiterlabor (HLL) and the Max-Planck-Institut fuer Physik (MPP). Pre-irradiation characterizations of these sensors show a very good device yield and high break down voltage. First proton irradiations up to a fluence of 1015 neq cm-2 have been carried out and their impact on the electrical properties of thin sensors has been studied. The novel ICV-SLID vertical integration technology will allow for routing signals vertically to the back side of the readout chips. With this, four-side buttable detector devices with an increased active area fraction are made possible. A first production of SLID test structures was performed and showed a high connection efficiency for different pad sizes and a mild sensitivity to disturbances of the surface planarity.

  5. Development of a Standardised Readout System for Active Pixel Sensors in HV/HR-CMOS Technologies for ATLAS Inner Detector Upgrades

    International Nuclear Information System (INIS)

    The LHC Phase-II Upgrade results in new challenges for tracking detectors for example in terms of cost effectiveness, resolution and radiation hardness. Active Pixel Sensors in HV/HR-CMOS technologies show promising results coping with these challenges. In order to demonstrate the feasibility of hybrid modules with active CMOS sensors and readout chips for the future ATLAS Inner Tracker, ATLAS R and D activities have started. After introducing the basic concepts and the demonstrator program, the development of an ATLAS compatible readout system will be presented as well as tuning procedures and measurements with demonstrator modules to test the readout system

  6. ATLAS Pixel Detector Operational Experience

    CERN Document Server

    Di Girolamo, B; The ATLAS collaboration

    2011-01-01

    The ATLAS Pixel Detector is the innermost detector of the ATLAS experiment at the Large Hadron Collider at CERN, providing high-resolution measurements of charged particle tracks in the high radiation environment close to the collision region. This capability is vital for the identification and measurement of proper decay times of long-lived particles such as b-hadrons, and thus vital for the ATLAS physics program. The detector provides hermetic coverage with three cylindrical layers and three layers of forward and backward pixel detectors. It consists of approximately 80 million pixels that are individually read out via chips bump-bonded to 1744 n-in-n silicon substrates. In this talk, results from the successful operation of the Pixel Detector at the LHC will be presented, including monitoring, calibration procedures, timing optimization and detector performance. The detector performance is excellent: 96.9% of the pixels are operational, noise occupancy and hit efficiency exceed the design specification, an...

  7. What's A Pixel Particle Sensor Chip?

    CERN Multimedia

    2008-01-01

    ATLAS particle physics experiment aided with collaboration ON Semiconductor was recently honored by the European Council for Nuclear Research (CERN), with an Industrial Award recognizing the company's contribution in supplying complex "Pixel Particle Sensor" chips for use in CERN's ATLAS particle physics experiment.

  8. Evaluation of novel KEK/HPK n-in-p pixel sensors for ATLAS upgrade with testbeam

    International Nuclear Information System (INIS)

    A new type of n-in-p planar pixel sensors have been developed at KEK/HPK in order to cope with the maximum particle fluence of 1–3×1016 1 MeV equivalent neutrons per square centimeter (neq/cm2) in the upcoming LHC upgrades. Four n-in-p devices were connected by bump-bonding to the new ATLAS Pixel front-end chip (FE-I4A) and characterized before and after the irradiation to 2×1015neq/cm2. These planar sensors are 150μm thick, using biasing structures made out of polysilicon or punch-through dot and isolation structures of common or individual p-stop. Results of measurements with radioactive 90Sr source and with a 120 GeV/c momentum pion beam at the CERN Super Proton Synchrotron (SPS) are presented. The common p-stop isolation structure shows a better performance than the individual p-stop design, after the irradiation. The flat distribution of the collected charge in the depth direction after the irradiation implies that the effect of charge trapping is small, at the fluence, with the bias voltage well above the full depletion voltage.

  9. Initial Measurements on Pixel Detector Modules for the ATLAS Upgrades

    CERN Document Server

    Gallrapp, C; The ATLAS collaboration

    2011-01-01

    Delicate conditions in terms of peak and integrated luminosity in the Large Hadron Collider (LHC) will raise the ATLAS Pixel Detector to its performance limits. Silicon planar, silicon 3D and diamond pixel sensors are three possible sensor technologies which could be implemented in the upcoming Pixel Detector upgrades of the ATLAS experiment. Measurements of the IV-behavior and measurements with radioactive Americium-241 and Strontium-90 are used to characterize the sensor properties and to understand the interaction between the ATLAS FE-I4 front-end chip and the sensor. Comparisons of results from before and after irradiation for silicon planar and 3D pixel sensors, which give a first impression on the charge collection properties of the different sensor technologies, are presented.

  10. Initial Measurements On Pixel Detector Modules For The ATLAS Upgrades

    CERN Document Server

    Gallrapp, C; The ATLAS collaboration

    2011-01-01

    Sophisticated conditions in terms of peak and integrated luminosity in the Large Hadron Collider (LHC) will raise the ATLAS Pixel detector to its performance limits. Silicon planar, silicon 3D and diamond pixel sensors are three possible sensor technologies which could be implemented in the upcoming pixel detector upgrades of the ATLAS experiment. Measurements of the IV-behavior and measurements with radioactive Americium-241 and Strontium-90 are used to characterize the sensor properties and to understand the interaction between the ATLAS FE-I4 front-end chip and the sensor. Comparisons of results from before and after irradiation, which give a first impression on the charge collection properties of the different sensor technologies are presented.

  11. ATLAS rewards two pixel detector suppliers

    CERN Multimedia

    2007-01-01

    Peter Jenni, ATLAS spokesperson, presented the ATLAS supplier award to Herbert Reichl, IZM director, and to Simonetta Di Gioia, from the SELEX company.Two of ATLAS’ suppliers were awarded prizes at a ceremony on Wednesday 13 June attended by representatives of the experiment’s management and of CERN. The prizes went to the Fraunhofer Institut für Zuverlässigkeit und Mikrointegration (IZM) in Berlin and the company SELEX Sistemi Integrati in Rome for the manufacture of modules for the ATLAS pixel detector. SELEX supplied 1500 of the modules for the tracker, while IZM produced a further 1300. The modules, each made up of 46080 channels, form the active part of the ATLAS pixel detector. IZM and SELEX received the awards for the excellent quality of their work: the average number of faulty channels per module was less than 2.10-3. They also stayed within budget and on schedule. The difficulty they faced was designing modules based on electronic components and sensor...

  12. Spectrally tunable pixel sensors

    Science.gov (United States)

    Langfelder, G.; Buffa, C.; Longoni, A. F.; Zaraga, F.

    2013-01-01

    They are here reported the developments and experimental results of fully operating matrices of spectrally tunable pixels based on the Transverse Field Detector (TFD). Unlike several digital imaging sensors based on color filter arrays or layered junctions, the TFD has the peculiar feature of having electrically tunable spectral sensitivities. In this way the sensor color space is not fixed a priori but can be real-time adjusted, e.g. for a better adaptation to the scene content or for multispectral capture. These advantages come at the cost of an increased complexity both for the photosensitive elements and for the readout electronics. The challenges in the realization of a matrix of TFD pixels are analyzed in this work. First experimental results on an 8x8 (x 3 colors) and on a 64x64 (x 3 colors) matrix will be presented and analyzed in terms of colorimetric and noise performance, and compared to simulation predictions.

  13. Electrical Characteristics of Silicon Pixel Sensors

    CERN Document Server

    Gorelov, I; Hoeferkamp, M; Mata-Bruni, V; Santistevan, G; Seidel, S C; Ciocio, A; Einsweiler, K F; Emes, J; Gilchriese, M G D; Joshi, A; Kleinfelder, S A; Marchesini, R; McCormack, F; Milgrome, O; Palaio, N; Pengg, F; Richardson, J; Zizka, G; Ackers, M; Comes, G; Fischer, P; Keil, M; Klasen, V; Kühl, T; Meuser, S; Ockenfels, W; Raith, B; Treis, J; Wermes, N; Gössling, C; Hügging, F G; Klaiber Lodewigs, Jonas M; Krasel, O; Wüstenfeld, J; Wunstorf, R; Barberis, D; Beccherle, R; Caso, Carlo; Cervetto, M; Darbo, G; Gagliardi, G; Gemme, C; Morettini, P; Netchaeva, P; Osculati, B; Rossi, L; Charles, E; Fasching, D; Blanquart, L; Breugnon, P; Calvet, D; Clemens, J-C; Delpierre, P A; Hallewell, G D; Laugier, D; Mouthuy, T; Rozanov, A; Valin, I; Andreazza, A; Caccia, M; Citterio, M; Lari, T; Meroni, C; Ragusa, F; Troncon, C; Vegni, G; Lutz, Gerhard; Richter, R H; Rohe, T; Boyd, GR; Skubic, P L; Sícho, P; Tomasek, L; Vrba, V; Holder, M; Ziolkowski, M; Cauz, D; Cobal-Grassmann, M; D'Auria, S; De Lotto, B; del Papa, C; Grassmann, H; Santi, L; Becks, K H; Lenzen, G; Linder, C

    2001-01-01

    Prototype sensors for the ATLAS silicon pixel detector have been electrically characterized. The current and voltage characteristics, charge collection efficiencies, and resolutions have been examined. Devices were fabricated on oxygenated and standard detector-grade silicon wafers. Results from prototypes which examine p-stop and standard and moderated p-spray isolation are presented for a variety of geometrical options. Some of the comparisons relate unirradiated sensors with those that have received fluences relevant to LHC operation.

  14. Thin n-in-p pixel sensors and the SLID-ICV vertical integration technology for the ATLAS upgrade at the HL-LHC

    CERN Document Server

    Macchiolo, A

    2013-01-01

    The R&D activity presented is focused on the development of new modules for the upgrade of the ATLAS pixel system at the High Luminosity LHC (HL-LHC). The performance after irradiation of n-in-p pixel sensors of different active thicknesses is studied, together with an investigation of a novel interconnection technique offered by the Fraunhofer Institute EMFT in Munich, the Solid-Liquid-InterDiffusion (SLID), which is an alternative to the standard solder bump-bonding. The pixel modules are based on thin n-in-p sensors, with an active thickness of 75 um or 150 um, produced at the MPI Semiconductor Laboratory (MPI HLL) and on 100 um thick sensors with active edges, fabricated at VTT, Finland. Hit efficiencies are derived from beam test data for thin devices irradiated up to a fluence of 4e15 neq/cm^2. For the active edge devices, the charge collection properties of the edge pixels before irradiation is discussed in detail, with respect to the inner ones, using measurements with radioactive sources. Beyond ...

  15. Selected results from the static characterization of edgeless n-on-p planar pixel sensors for ATLAS upgrades

    CERN Document Server

    Giacomini, Gabriele; Bomben, Marco; Boscardin, Maurizio; Bosisio, Luciano; Calderini, Giovanni; Chauveau, Jacques; La Rosa, Alessandro; Marchiori, Giovanni; Zorzi, Nicola

    2014-01-01

    In view of the LHC upgrade for the High Luminosity Phase (HL-LHC), the ATLAS experiment is planning to replace the Inner Detector with an all-Silicon system. The n-on-p technology represents a valid solution for the modules of most of the layers, given the significant radiation hardness of this option and the reduced cost. There is also the demand to reduce the inactive areas to a minimum. The ATLAS LPNHE Paris group and FBK Trento started a collaboration for the development on a novel n-on-p edgeless planar pixel design, based on the deep-trench process which can cope with all these requirements. This paper reports selected results from the electrical characterization, both before and after irradiation, of test structures from the first production batch.

  16. Thin n-in-p pixel sensors and the SLID-ICV vertical integration technology for the ATLAS upgrade at the HL-LHC

    Science.gov (United States)

    Macchiolo, A.; Andricek, L.; Ellenburg, M.; Moser, H. G.; Nisius, R.; Richter, R. H.; Terzo, S.; Weigell, P.

    2013-12-01

    This R&D activity is focused on the development of new modules for the upgrade of the ATLAS pixel system at the High Luminosity LHC (HL-LHC). The performance after irradiation of n-in-p pixel sensors of different active thicknesses is studied, together with an investigation of a novel interconnection technique offered by the Fraunhofer Institute EMFT in Munich, the Solid-Liquid-InterDiffusion (SLID), which is an alternative to the standard solder bump-bonding. The pixel modules are based on thin n-in-p sensors, with an active thickness of 75 μm or 150 μm, produced at the MPI Semiconductor Laboratory (MPI HLL) and on 100 μm thick sensors with active edges, fabricated at VTT, Finland. Hit efficiencies are derived from beam test data for thin devices irradiated up to a fluence of 4×1015 neq/cm2. For the active edge devices, the charge collection properties of the edge pixels before irradiation are discussed in detail, with respect to the inner ones, using measurements with radioactive sources. Beyond the active edge sensors, an additional ingredient needed to design four side buttable modules is the possibility of moving the wire bonding area from the chip surface facing the sensor to the backside, avoiding the implementation of the cantilever extruding beyond the sensor area. The feasibility of this process is under investigation with the FE-I3 SLID modules, where Inter Chip Vias are etched, employing an EMFT technology, with a cross section of 3 μm×10 μm, at the positions of the original wire bonding pads.

  17. Commissioning of the ATLAS pixel detector

    Energy Technology Data Exchange (ETDEWEB)

    ATLAS Collaboration; Golling, Tobias

    2008-09-01

    The ATLAS pixel detector is a high precision silicon tracking device located closest to the LHC interaction point. It belongs to the first generation of its kind in a hadron collider experiment. It will provide crucial pattern recognition information and will largely determine the ability of ATLAS to precisely track particle trajectories and find secondary vertices. It was the last detector to be installed in ATLAS in June 2007, has been fully connected and tested in-situ during spring and summer 2008, and is ready for the imminent LHC turn-on. The highlights of the past and future commissioning activities of the ATLAS pixel system are presented.

  18. Operational experience of the ATLAS Pixel Detector

    CERN Document Server

    Marcisovsky, M; The ATLAS collaboration

    2011-01-01

    The ATLAS Pixel Detector is the innermost detector of the ATLAS experiment at the Large Hadron Collider at CERN, providing high-resolution measurements of charged particle tracks in the high radiation environment close to the collision region. This capability is vital for the identification and measurement of proper decay times of long-lived particles such as b-hadrons, and thus vital for the ATLAS physics program. The detector provides hermetic coverage with three cylindrical layers and three layers of forward and backward pixel detectors. It consists of approximately 80 million pixels that are individually read out via chips bump-bonded to 1744 n-in-n silicon substrates. In this talk, results from the successful operation of the Pixel Detector at the LHC will be presented, including monitoring, calibration procedures, timing optimization and detector performance. The detector performance is excellent: 97,5% of the pixels are operational, noise occupancy and hit efficiency exceed the design specification, an...

  19. Operational experience of the ATLAS Pixel detector

    CERN Document Server

    Hirschbuehl, D; The ATLAS collaboration

    2011-01-01

    The ATLAS Pixel Detector is the innermost detector of the ATLAS experiment at the Large Hadron Collider at CERN, providing high-resolution measurements of charged particle tracks in the high radiation environment close to the collision region. This capability is vital for the identification and measurement of proper decay times of long-lived particles such as b-hadrons, and thus vital for the ATLAS physics program. The detector provides hermetic coverage with three cylindrical layers and three layers of forward and backward pixel detectors. It consists of approximately 80 million pixels that are individually read out via chips bump-bonded to 1744 n-in-n silicon substrates. In this talk, results from the successful operation of the Pixel Detector at the LHC will be presented, including monitoring, calibration procedures, timing optimization and detector performance. The detector performance is excellent: 97,5% of the pixels are operational, noise occupancy and hit efficiency exceed the design specification, an...

  20. Operational experience with the ATLAS Pixel Detector

    CERN Document Server

    Ince, T; The ATLAS collaboration

    2012-01-01

    The ATLAS Pixel Detector is the innermost element of the ATLAS experiment at the Large Hadron Collider at CERN, providing high-resolution measurements of charged particle tracks in the high radiation environment close to the collision region. This capability is vital for the identification and measurement of proper decay times of long-lived particles such as b-hadrons, and thus vital for the ATLAS physics program. The detector provides hermetic coverage with three cylindrical layers and three layers of forward and backward pixel detectors. It consists of approximately 80 million pixels that are individually read out via chips bump-bonded to 1744 n-in-n silicon substrates. In this paper, results from the successful operation of the Pixel Detector at the LHC will be presented, including monitoring, calibration procedures, timing optimization and detector performance. The detector performance is excellent: 96.2% of the pixels are operational, noise occupancy and hit efficiency exceed the design specification, an...

  1. Pixel electronics for the ATLAS experiment

    CERN Document Server

    Fischer, P

    2001-01-01

    The ATLAS experiment at LHC will use 3 barrel layers and 2*5 disks of silicon pixel detectors as the innermost elements of the semiconductor tracker. The basic building blocks are pixel modules with an active area of 16.4 mm*60.8 mm which include an n/sup +/ on n-type silicon sensor and 16 VLSI front-end (FE) chips. Every FE chip contains a low power, high speed charge sensitive preamplifier, a fast discriminator, and a readout system which operates at the 40 MHz rate of LHC. The addresses of hit pixels (as well as a low resolution pulse height information) are stored on the FE chips until arrival of a level 1 trigger signal. Hits are then transferred to a module controller chip (MCC) which collects the data of all 16 FE chips, builds complete events and sends the data through two optical links to the data acquisition system. The MCC receives clock and data through an additional optical link and provides timing and configuration information for the FE chips. Two additional chips are used to amplify and decode...

  2. Commissioning of the ATLAS Pixel Detector

    OpenAIRE

    Golling, Tobias; ATLAS Collaboration

    2008-01-01

    The ATLAS pixel detector is a high precision silicon tracking device located closest to the LHC interaction point. It belongs to the first generation of its kind in a hadron collider experiment. It will provide crucial pattern recognition information and will largely determine the ability of ATLAS to precisely track particle trajectories and find secondary vertices. It was the last detector to be installed in ATLAS in June 2007, has been fully connected and tested in-situ during spring and su...

  3. Planar pixel sensors in commercial CMOS technologies

    International Nuclear Information System (INIS)

    For the upgrade of the ATLAS experiment at the high luminosity LHC, an all-silicon tracker is foreseen to cope with the increased rate and radiation levels. Pixel and strip detectors will have to cover an area of up to 200m2. To produce modules in high number at reduced costs, new sensor and bonding technologies have to be investigated. Commercial CMOS technologies on high resistive substrates can provide significant advantages in this direction. They offer cost effective, large volume sensor production. In addition to this, production is done on 8'' wafers allowing wafer-to-wafer bonding to the electronics, an interconnection technology substantially cheaper than the bump bonding process used for hybrid pixel detectors at the LHC. Both active and passive n-in-p pixel sensor prototypes have been submitted in a 150 nm CMOS technology on a 2kΩ cm substrate. The passive sensor design will be used to characterize sensor properties and to investigate wafer-to-wafer bonding technologies. This first prototype is made of a matrix of 36 x 16 pixels of size compatible with the FE-I4 readout chip (i.e. 50 μm x 250 μm). Results from lab characterization of this first submission are shown together with TCAD simulations. Work towards a full size FE-I4 sensor for wafer-to-wafer bonding is discussed.

  4. Vertex measurement at a hadron collider. The ATLAS pixel detector

    International Nuclear Information System (INIS)

    The ATLAS Pixel Detector is the innermost layer of the ATLAS tracking system and will contribute significantly to the ATLAS track and vertex reconstruction. The detector consists of identical sensor-chip-hybrid modules, arranged in three barrels in the centre and three disks on either side for the forward region. The position of the Pixel Detector near the interaction point requires excellent radiation hardness, fast read-out, mechanical and thermal robustness, good long-term stability, all combined with a low material budget. The new design concepts used to meet the challenging requirements are discussed with their realisation in the Pixel Detector, followed by a description of a refined and extensive set of measurements to assess the detector performance during and after its construction. (orig.)

  5. Overview of HVCMOS pixel sensors

    International Nuclear Information System (INIS)

    High voltage CMOS (HVCMOS) sensors are presently considered for the use in Mu3e experiment, ATLAS and CLIC. These sensors can be implemented in commercial HVCMOS processes. HVCMOS sensors feature fast charge collection by drift and high radiation tolerance. The sensor element is an n-well/p-type diode. This proceeding-paper gives an overview of HVCMOS projects and the recent results

  6. Measurement of charm and beauty-production in deep inelastic scattering at HERA and test beam studies of ATLAS pixel sensors

    International Nuclear Information System (INIS)

    A measurement of charm and beauty production in Deep Inelastic Scattering at HERA is presented. The analysis is based on the data sample collected by the ZEUS detector in the period from 2003 to 2007 corresponding to an integrated luminosity of 354 pb-1. The kinematic region of the measurement is given by 522 and 0.022 is the photon virtuality and y is the inelasticity. A lifetime technique is used to tag the production of charm and beauty quarks. Secondary vertices due to decays of charm and beauty hadrons are reconstructed, in association with jets. The jet kinematics is defined by EjetT>4.2(5) GeV for charm (beauty) and -1.6jetjetT and ηjet are the transverse energy and pseudorapidity of the jet, respectively. The significance of the decay length and the invariant mass of charged tracks associated with the secondary vertex are used as discriminating variables to distinguish between signal and background. Differential cross sections of jet production in charm and beauty events as a function of Q2, y, EjetT and ηjet are measured. Results are compared to Next-to-Leading Order (NLO) predictions from Quantum Chromodynamics (QCD) in the fixed flavour number scheme. Good agreement between data and theory is observed. Contributions of the charm and beauty production to the inclusive proton structure function, Fcbarc2 and Fbantib2, are determined by extrapolating the double differential cross sections using NLO QCD predictions. Contributions to the test beam program for the Insertable B-Layer upgrade project of the ATLAS pixel detector are discussed. The test beam data analysis software package EUTelescope was extended, which allowed an efficient analysis of ATLAS pixel sensors. The USBPix DAQ system was integrated into the EUDET telescope allowing test beam measurements with the front end chip FE-I4. Planar and 3D ATLAS pixel sensors were studied at the first IBL test beam at the CERN SPS.

  7. Measurement of charm and beauty-production in deep inelastic scattering at HERA and test beam studies of ATLAS pixel sensors

    Energy Technology Data Exchange (ETDEWEB)

    Libov, Vladyslav

    2013-08-15

    A measurement of charm and beauty production in Deep Inelastic Scattering at HERA is presented. The analysis is based on the data sample collected by the ZEUS detector in the period from 2003 to 2007 corresponding to an integrated luminosity of 354 pb{sup -1}. The kinematic region of the measurement is given by 54.2(5) GeV for charm (beauty) and -1.6<{eta}{sup jet}<2.2 for both charm and beauty, where E{sup jet}{sub T} and {eta}{sup jet} are the transverse energy and pseudorapidity of the jet, respectively. The significance of the decay length and the invariant mass of charged tracks associated with the secondary vertex are used as discriminating variables to distinguish between signal and background. Differential cross sections of jet production in charm and beauty events as a function of Q{sup 2}, y, E{sup jet}{sub T} and {eta}{sup jet} are measured. Results are compared to Next-to-Leading Order (NLO) predictions from Quantum Chromodynamics (QCD) in the fixed flavour number scheme. Good agreement between data and theory is observed. Contributions of the charm and beauty production to the inclusive proton structure function, F{sup cbar} {sup c}{sub 2} and F{sup b} {sup anti} {sup b}{sub 2}, are determined by extrapolating the double differential cross sections using NLO QCD predictions. Contributions to the test beam program for the Insertable B-Layer upgrade project of the ATLAS pixel detector are discussed. The test beam data analysis software package EUTelescope was extended, which allowed an efficient analysis of ATLAS pixel sensors. The USBPix DAQ system was integrated into the EUDET telescope allowing test beam

  8. Operational Experience with the ATLAS Pixel Detector

    CERN Document Server

    Lantzsch, Kerstin; The ATLAS collaboration

    2016-01-01

    Run 2 of the LHC is providing new challenges to track and vertex reconstruction with higher energies, denser jets and higher rates. Therefore the ATLAS experiment has constructed the first 4-layer Pixel detector in HEP, installing a new Pixel layer, also called Insertable B-Layer (IBL). In addition the Pixel detector was refurbished with new service quarter panels to recover about 3% of defective modules lost during run 1 and a new optical readout system to readout the data at higher speed while reducing the occupancy when running with increased luminosity. The commissioning, operation and performance of the 4-layer Pixel Detector will be presented.

  9. Radiation damage monitoring of the ATLAS pixel detector

    CERN Document Server

    Seidel, Sally; The ATLAS collaboration

    2015-01-01

    A measurement has been made of the radiation damage incurred by the ATLAS Pixel Detector barrel silicon modules from the beginning of operations through the end of 2012. This translates to hadronic fluence received over the full period of operation at energies up to and including 8 TeV. The measurement is based on a per-module record of the silicon sensor leakage current. The results are presented as a function of integrated luminosity and compared to predictions by the Hamburg Model. This information can be used to predict limits on the lifetime of the Pixel Detector due to current, for various operating scenarios.

  10. Upgrades of the ATLAS Pixel Detector

    CERN Document Server

    Hügging, F; The ATLAS collaboration

    2013-01-01

    The upgrade for the ATLAS detector will undergo different phases towards HL-LHC. The first upgrade for the Pixel Detector (Phase 1) consists in the construction of a new pixel layer, which will be installed during the 1st long shutdown of the LHC machine (LS1) in 2013/14. The new detector, called Insertable B-Layer (IBL), will be inserted between the existing pixel detector and a new (smaller radius) beam-pipe at a radius of about 3.2 cm. The IBL requires the development of several new technologies to cope with the increase of radiation and pixel occupancy as well as to improve the physics performance of the existing pixel detector. The pixel size is reduced and the material budget is minimized by using new lightweight mechanical support materials and a CO2 based cooling system. For Phase 2 upgrade of LHC a complete new 4-layer pixel system is planned as part of a new all silicon Inner Detector. The increase in luminosity to about $5\\cdot 10^{34}$cm$^{-2}$s$^{-1}$ together with a total expected lifetime of ab...

  11. Optical Link of the Atlas Pixel Detector

    OpenAIRE

    Gan, K. K.

    2007-01-01

    The on-detector optical link of the ATLAS pixel detector contains radiation-hard receiver chips to decode bi-phase marked signals received on PIN arrays and data transmitter chips to drive VCSEL arrays. The components are mounted on hybrid boards (opto-boards). We present results from the irradiation studies with 24 GeV protons up to 32 Mrad (1.2 x 10^15 p/cm^2) and the experience from the production.

  12. Monitoring Radiation Damage in the ATLAS Pixel Detector

    CERN Document Server

    Schorlemmer, André Lukas; Große-Knetter, Jörn; Rembser, Christoph; Di Girolamo, Beniamino

    2014-11-05

    Radiation hardness is one of the most important features of the ATLAS pixel detector in order to ensure a good performance and a long lifetime. Monitoring of radiation damage is crucial in order to assess and predict the expected performance of the detector. Key values for the assessment of radiation damage in silicon, such as the depletion voltage and depletion depth in the sensors, are measured on a regular basis during operations. This thesis summarises the monitoring program that is conducted in order to assess the impact of radiation damage and compares it to model predictions. In addition, the physics performance of the ATLAS detector highly depends on the amount of disabled modules in the ATLAS pixel detector. A worrying amount of module failures was observed during run I. Thus it was decided to recover repairable modules during the long shutdown (LS1) by extracting the pixel detector. The impact of the module repairs and module failures on the detector performance is analysed in this thesis.

  13. Development and characterization of diamond and 3D-silicon pixel detectors with ATLAS-pixel readout electronics

    International Nuclear Information System (INIS)

    Hybrid pixel detectors are used for particle tracking in the innermost layers of current high energy experiments like ATLAS. After the proposed luminosity upgrade of the LHC, they will have to survive very high radiation fluences of up to 1016 particles per cm2 per life time. New sensor concepts and materials are required, which promise to be more radiation tolerant than the currently used planar silicon sensors. Most prominent candidates are so-called 3D-silicon and single crystal or poly-crystalline diamond sensors. Using the ATLAS pixel electronics different detector prototypes with a pixel geometry of 400 x 50 μm2 have been built. In particular three devices have been studied in detail: a 3D-silicon and a single crystal diamond detector with an active area of about 1 cm2 and a poly-crystalline diamond detector of the same size as a current ATLAS pixel detector module (2 x 6 cm2). To characterize the devices regarding their particle detection efficiency and spatial resolution, the charge collection inside a pixel cell as well as the charge sharing between adjacent pixels was studied using a high energy particle beam. (orig.)

  14. Development and characterization of diamond and 3D-silicon pixel detectors with ATLAS-pixel readout electronics

    Energy Technology Data Exchange (ETDEWEB)

    Mathes, Markus

    2008-12-15

    Hybrid pixel detectors are used for particle tracking in the innermost layers of current high energy experiments like ATLAS. After the proposed luminosity upgrade of the LHC, they will have to survive very high radiation fluences of up to 10{sup 16} particles per cm{sup 2} per life time. New sensor concepts and materials are required, which promise to be more radiation tolerant than the currently used planar silicon sensors. Most prominent candidates are so-called 3D-silicon and single crystal or poly-crystalline diamond sensors. Using the ATLAS pixel electronics different detector prototypes with a pixel geometry of 400 x 50 {mu}m{sup 2} have been built. In particular three devices have been studied in detail: a 3D-silicon and a single crystal diamond detector with an active area of about 1 cm{sup 2} and a poly-crystalline diamond detector of the same size as a current ATLAS pixel detector module (2 x 6 cm{sup 2}). To characterize the devices regarding their particle detection efficiency and spatial resolution, the charge collection inside a pixel cell as well as the charge sharing between adjacent pixels was studied using a high energy particle beam. (orig.)

  15. Survey of the ATLAS Pixel Detector Components

    International Nuclear Information System (INIS)

    This document provides a description of the survey performed on different components of the ATLAS Pixel Detector at different stages of its assembly. During the production of the ATLAS pixel detector great care was put in the geometrical survey of the location of the sensitive area of modules. This had a double purpose: (1) to provide a check of the quality of the assembly procedure and assure tolerances in the geometrical assembly were met; and (2) to provide an initial point for the alignment (the so called 'as-built detector'), better than the ideal geometry. Since direct access to the sensitive area becomes more and more difficult with the progress of the assembly, the survey needed to be performed at different stages: after module loading on the local supports (sectors and staves) and after assembly of the local supports in disks or halfshells. Different techniques were used, including both optical 2D and 3D surveys and mechanical survey. This document summarizes the survey procedures, the analysis done on the collected data and how survey data are stored in case they will need to be accessed in the future

  16. Optical links for the ATLAS Pixel detector

    CERN Document Server

    Stucci, Stefania Antonia; The ATLAS collaboration

    2015-01-01

    Optical links are necessary to satisfy the high speed readout over long distances for advanced silicon detector systems. We report on the optical readout used in the newly installed central pixel layer (IBL) in the ATLAS experiment. The off detector readout employs commercial optical to analog converters, which were extensively tested for this application. Performance measurements during installation and commissioning will be shown. With the increasing instantaneous luminosity in the next years, the next layers outwards of IBL of the ATLAS Pixel detector (Layer 1 and Layer 2) will reach their bandwidth limits. A plan to increase the bandwidth by upgrading the off detector readout chain is put in place. The plan also involves new optical readout components, in particular the optical receivers, for which commercial units cannot be used and a new design has been made. The latter allows for a wider operational range in term of data frequency and light input power to match the on-detector sending units on the pres...

  17. optical links for the atlas pixel detector

    CERN Document Server

    Stucci, Stefania Antonia; The ATLAS collaboration

    2015-01-01

    Optical links are necessary to satisfy the high speed readout over long distances for advanced silicon detector systems. We report on the optical readout used in the newly installed central pixel layer (IBL) in the ATLAS experiment. The off detector readout employs commercial optical to analog converters, which were extensively tested for this application. Performance measurements during installation and commissioning will be shown. With the increasing instantaneous luminosity in the next years, the next layers outwards of IBL of the ATLAS Pixel detector (Layer 1 and Layer 2) will reach their bandwidth limits. A plan to increase the bandwidth by upgrading the off detector readout chain is put in place. The plan also involves new optical readout components, in particular the optical receivers, for which commercial units cannot be used and a new design has been made. The latter allows for a wider operational range in term of data frequency and light input power to match the on-detector sending units on the pres...

  18. Results on 0.7% X0 thick pixel modules for the ATLAS detector

    CERN Document Server

    Netchaeva, P; Darbo, G; Einsweiler, Kevin F; Gagliardi, G; Gemme, C; Gilchriese, M G D; Oppizzi, P; Richardson, J; Rossi, L; Ruscino, E; Vernocchi, F; Znizka, G

    2001-01-01

    Modules are the basic building blocks of the ATLAS pixel detector system, they are made of a silicon sensor tile containing ~46000 pixel cells of 50 mu m*400 mu m, 16 front-end chips connected to the sensor through bump bonding, a kapton flex circuit and the module controller chip. The pixel detector is the first to encounter particles emerging from LHC interactions, minimization of radiation length of pixel modules is therefore very important. We report here on the construction techniques and on the operation of the first ATLAS pixel modules of 0.7% radiation length thickness. We have operated these modules with threshold of 3700*10+or-300*10, mean noise value of 225*10 and 0.3% dead channels. (3 refs).

  19. Results on 0.7% X0 thick pixel modules for the ATLAS detector

    International Nuclear Information System (INIS)

    Modules are the basic building blocks of the ATLAS pixel detector system, they are made of a silicon sensor tile containing ∼46 000 pixel cells of 50 μmx400 μm, 16 front-end chips connected to the sensor through bump bonding, a kapton flex circuit and the module controller chip. The Pixel detector is the first to encounter particles emerging from LHC interactions, minimization of radiation length of pixel modules is therefore very important. We report here on the construction techniques and on the operation of the first ATLAS pixel modules of 0.7% radiation length thickness. We have operated these modules with threshold of 3700x10±300x10, mean noise value of 225x10 and 0.3% dead channels

  20. Status and future of the ATLAS Pixel Detector at the LHC

    International Nuclear Information System (INIS)

    The ATLAS Pixel Detector is the innermost detector of the ATLAS experiment at the Large Hadron Collider at CERN. The detector provides hermetic coverage with three cylindrical layers and three layers of disks in each forward end-cap. It consists of approximately 80 million pixels that are individually read out via chips bump-bonded to 1744 n-on-n silicon substrates. Intensive calibration, tuning, timing optimization and monitoring resulted in the successful five years of operation with good detector performance. The record breaking instantaneous luminosities of 7.7×1033cm−2s−1 recently surpassed at the LHC generated a rapidly increasing particle fluence in the ATLAS Pixel Detector. As the radiation dose accumulated, the first effects of radiation damage became observable in the silicon sensors as an increase in the silicon leakage current and the change of the voltage required to fully deplete the sensor. A fourth pixel layer at a radius of 3.3 cm will be added during the long shutdown (2013–2014) together with the replacement of pixel services. A letter of intent was submitted for a completely new Pixel Detector after 2023, capable to take data with extremely high leveled luminosities of 5×1034cm−2s−1 at the high luminosity LHC. -- Highlights: •The ATLAS Pixel Detector provides hermetic coverage with three layers with 80 million pixels. •Calibration, tuning, timing optimization and monitoring resulted in the successful five years of operation with good detector performance. •First effects of radiation damage became observable in the silicon sensors. •A fourth pixel layer at a radius of 3.3 cm will be added during the long shutdown (2013–2014). •Replacement of pixel services in 2013–2014. •A letter of intent was submitted for new Pixel Detector after 2023 for high luminosity LHC

  1. Development and Characterization of Diamond and 3D-Silicon Pixel Detectors with ATLAS-Pixel Readout Electronics

    CERN Document Server

    Mathes, Markus

    2008-01-01

    Abstract: Hybrid pixel detectors are used for particle tracking in the innermost layers of current high energy experiments like ATLAS. After the proposed luminosity upgrade of the LHC, they will have to survive very high radiation fluences of up to 10^16 particles per cm^2 per life time. New sensor concepts and materials are required, which promise to be more radiation tolerant than the currently used planar silicon sensors. Most prominent candidates are so-called 3D-silicon and single crystal or poly-crystalline diamond sensors. Using the ATLAS pixel electronics different detector prototypes with a pixel geometry of 400 × 50 um^2 have been built. In particular three devices have been studied in detail: a 3D-silicon and a single crystal diamond detector with an active area of about 1 cm^2 and a poly-crystalline diamond detector of the same size as a current ATLAS pixel detector module (2 × 6 cm^2). To characterize the devices regarding their particle detection efficiency and spatial resolution, the charge c...

  2. ATLAS Pixel Detector Design For HL-LHC

    CERN Document Server

    Smart, Ben; The ATLAS collaboration

    2016-01-01

    The ATLAS Inner Detector will be replaced for the High-Luminosity LHC (HL-LHC) running in 2026. The new Inner Detector will be called the Inner Tracker (ITk). The ITk will cover an extended eta-range: at least to |eta|<3.2, and likely up to |eta|<4.0. The ITk will be an all-Silicon based detector, consisting of a Silicon strip detector outside of a radius of 362mm, and a Silicon pixel detector inside of this radius. Several novel designs are being considered for the ITk pixel detector, to cope with high-eta charged particle tracks. These designs are grouped into 'extended' and 'inclined' design-types. Extended designs have long pixel staves with sensors parallel to the beamline. High-eta particles will therefore hit these sensors at shallow angles, leaving elongated charge clusters. The length of such a charge cluster can be used to estimate the angle of the passing particle. This information can then be used in track reconstruction to improve tracking efficiency and reduce fake rates. Inclined designs ...

  3. Advanced pixel architectures for scientific image sensors

    CERN Document Server

    Coath, R; Godbeer, A; Wilson, M; Turchetta, R

    2009-01-01

    We present recent developments from two projects targeting advanced pixel architectures for scientific applications. Results are reported from FORTIS, a sensor demonstrating variants on a 4T pixel architecture. The variants include differences in pixel and diode size, the in-pixel source follower transistor size and the capacitance of the readout node to optimise for low noise and sensitivity to small amounts of charge. Results are also reported from TPAC, a complex pixel architecture with ~160 transistors per pixel. Both sensors were manufactured in the 0.18μm INMAPS process, which includes a special deep p-well layer and fabrication on a high resistivity epitaxial layer for improved charge collection efficiency.

  4. TFA pixel sensor technology for vertex detectors

    OpenAIRE

    Jarron, P.; Moraes, D.; Despeisse, M.; Dissertori, G.; Dunand, S.; Kaplon. J.; Miazza, C.; Shah, Arvind; Viertel, G M.; Wyrsch, Nicolas

    2008-01-01

    Pixel microvertex detectors at the SLHC and a future linear collider face very challenging issues: extreme radiation hardness, cooling design, interconnections density and fabrication cost. As an alternative approach we present a novel pixel detector based on the deposition of a Hydrogenated Amorphous Silicon (a-Si:H) film on top of a readout ASIC. The Thin-Film on ASIC (TFA) technology is inspired by an emerging microelectronic technology envisaged for visible light Active Pixel Sensor (APS)...

  5. Operational experience with the ATLAS Pixel Detector at the LHC

    Science.gov (United States)

    Lapoire, C.; Atlas Collaboration

    2013-01-01

    The ATLAS Pixel Detector is the innermost detector of the ATLAS experiment at the Large Hadron Collider at CERN, providing high-resolution measurements of charged particle tracks in the high radiation environment close to the collision region. This capability is vital for the identification and measurement of proper decay times of long-lived particles such as B-hadrons, and thus vital for the ATLAS physics program. The detector provides hermetic coverage with three cylindrical layers and three layers of forward and backward pixel detectors. It consists of approximately 80 million pixels that are individually read out via chips bump-bonded to 1744 n-in-n silicon substrates. In this paper, results from the successful operation of the Pixel Detector at the LHC will be presented, including monitoring, calibration procedures and detector performance. The detector performance is excellent: 96.2% of the pixels are operational, noise occupancy is sufficiently low and hit efficiency exceed the design specification.

  6. Operational experience with the ATLAS Pixel Detector at the LHC

    CERN Document Server

    Hirschbuehl, D; The ATLAS collaboration

    2011-01-01

    The ATLAS Pixel Detector is the innermost detector of the ATLAS experiment at the Large Hadron Collider at CERN, providing high-resolution measurements of charged particle tracks in the high radiation environment close to the collision region. This capability is vital for the identification and measurement of proper decay times of long-lived particles such as b-hadrons, and thus vital for the ATLAS physics program. The detector provides hermetic coverage with three cylindrical layers and three layers of forward and backward pixel detectors. It consists of approximately 80 million pixels that are individually read out via chips bump-bonded to 1744 n-in-n silicon substrates. In this paper results from the successful operation of the Pixel Detector at the LHC will be presented, including monitoring, calibration procedures, timing optimization and detector performance. The detector performance is excellent: 96.7% of the pixels are operational, noise occupancy and hit efficiency exceed the design specification, an...

  7. Operational Experience with the ATLAS Pixel Detector at the LHC

    CERN Document Server

    Keil, M; The ATLAS collaboration

    2011-01-01

    The ATLAS Pixel Detector is the innermost detector of the ATLAS experiment at the Large Hadron Collider at CERN, providing high-resolution measurements of charged particle tracks in the high radiation environment close to the collision region. This capability is vital for the identification and measurement of proper decay times of long-lived particles such as b-hadrons, and thus vital for the ATLAS physics program. The detector provides hermetic coverage with three cylindrical layers and three layers of forward and backward pixel detectors. It consists of approximately 80 million pixels that are individually read out via chips bump-bonded to 1744 n-in-n silicon substrates. In this talk, results from the successful operation of the Pixel Detector at the LHC will be presented, including monitoring, calibration procedures, timing optimization and detector performance. The detector performance is excellent: 97,5% of the pixels are operational, noise occupancy and hit efficiency exceed the design specification, an...

  8. Operational experience with the ATLAS Pixel detector at the LHC

    CERN Document Server

    Deluca, C; The ATLAS collaboration

    2011-01-01

    The ATLAS Pixel Detector is the innermost detector of the ATLAS experiment at the Large Hadron Collider at CERN, providing high-resolution measurements of charged particle tracks in the high radiation environment close to the collision region. This capability is vital for the identification and measurement of proper decay times of long-lived particles such as b-hadrons, and thus vital for the ATLAS physics program. The detector provides hermetic coverage with three cylindrical layers and three layers of forward and backward pixel detectors. It consists of approximately 80 million pixels that are individually read out via chips bump-bonded to 1744 n-in-n silicon substrates. In this paper, results from the successful operation of the Pixel Detector at the LHC will be presented, including monitoring, calibration procedures, timing optimization and detector performance. The detector performance is excellent: 97,5\\% of the pixels are operational, noise occupancy and hit efficiency exceed the design specification, ...

  9. Operational experience with the ATLAS Pixel Detector at the LHC

    CERN Document Server

    Ince, T; The ATLAS collaboration

    2011-01-01

    The ATLAS Pixel Detector is the innermost detector of the ATLAS experiment at the Large Hadron Collider at CERN, providing high-resolution measurements of charged particle tracks in the high radiation environment close to the collision region. This capability is vital for the identification and measurement of proper decay times of long-lived particles such as b-hadrons, and thus vital for the ATLAS physics program. The detector provides hermetic coverage with three cylindrical layers and three layers of forward and backward pixel detectors. It consists of approximately 80 million pixels that are individually read out via chips bump-bonded to 1744 n-in-n silicon substrates. In this talk, results from the successful operation of the Pixel Detector at the LHC will be presented, including monitoring, calibration procedures, timing optimization and detector performance. The detector performance is excellent: 96.8% of the pixels are operational, noise occupancy and hit efficiency exceed the design specification, an...

  10. Operational experience with the ATLAS Pixel Detector at the LHC

    CERN Document Server

    Lapoire, C; The ATLAS collaboration

    2011-01-01

    The ATLAS Pixel Detector is the innermost detector of the ATLAS experiment at the Large Hadron Collider at CERN, providing high-resolution measurements of charged particle tracks in the high radiation environment close to the collision region. This capability is vital for the identification and measurement of proper decay times of long-lived particles such as b-hadrons, and thus vital for the ATLAS physics program. The detector provides hermetic coverage with three cylindrical layers and three layers of forward and backward pixel detectors. It consists of approximately 80 million pixels that are individually read out via chips bump-bonded to 1744 n-in-n silicon substrates. In this talk, results from the successful operation of the Pixel Detector at the LHC will be presented, including monitoring, calibration procedures, timing optimization and detector performance. The detector performance is excellent: 97,5% of the pixels are operational, noise occupancy and hit efficiency exceed the design specification, an...

  11. Operational Experience with the ATLAS Pixel Detector at the LHC

    CERN Document Server

    Lapoire, C; The ATLAS collaboration

    2012-01-01

    The ATLAS Pixel Detector is the innermost detector of the ATLAS experiment at the Large Hadron Collider at CERN, providing high-resolution measurements of charged particle tracks in the high radiation environment close to the collision region. This capability is vital for the identification and measurement of proper decay times of long-lived particles such as B-hadrons, and thus vital for the ATLAS physics program. The detector provides hermetic coverage with three cylindrical layers and three layers of forward and backward pixel detectors. It consists of approximately 80 million pixels that are individually read out via chips bump-bonded to 1744 n-in-n silicon substrates. In this paper, results from the successful operation of the Pixel Detector at the LHC will be presented, including monitoring, calibration procedures and detector performance. The detector performance is excellent: 96.2% of the pixels are operational, noise occupancy and hit efficiency exceed the design specification.

  12. Operational Experience with the ATLAS Pixel Detector at the LHC

    CERN Document Server

    Lange, C; The ATLAS collaboration

    2011-01-01

    The ATLAS Pixel Detector is the innermost detector of the ATLAS experiment at the Large Hadron Collider at CERN, providing high-resolution measurements of charged particle tracks in the high radiation environment close to the collision region. This capability is vital for the identification and measurement of proper decay times of long-lived particles such as b-hadrons, and thus vital for the ATLAS physics program. The detector provides hermetic coverage with three cylindrical layers and three layers of forward and backward pixel detectors. It consists of approximately 80 million pixels that are individually read out via chips bump- bonded to 1744 n-in-n silicon substrates. In this talk, results from the successful operation of the Pixel Detector at the LHC will be presented, including monitoring, calibration procedures, timing optimization and detector performance. The detector performance is excellent: 97,5% of the pixels are operational, noise occupancy and hit efficiency exceed the design specification, a...

  13. Operational experience with the ATLAS Pixel detector at the LHC

    CERN Document Server

    Deluca, C; The ATLAS collaboration

    2011-01-01

    The ATLAS Pixel Detector is the innermost detector of the ATLAS experiment at the Large Hadron Collider at CERN, providing high-resolution measurements of charged particle tracks in the high radiation environment close to the collision region. This capability is vital for the identification and measurement of proper decay times of long-lived particles such as b-hadrons, and thus vital for the ATLAS physics program. The detector provides hermetic coverage with three cylindrical layers and three layers of forward and backward pixel detectors. It consists of approximately 80 million pixels that are individually read out via chips bump-bonded to 1744 n-in-n silicon substrates. In this talk, results from the successful operation of the Pixel Detector at the LHC will be presented, including monitoring, calibration procedures, timing optimization and detector performance. The detector performance is excellent: 97,5% of the pixels are operational, noise occupancy and hit efficiency exceed the design specification, an...

  14. DAQ Hardware and software development for the ATLAS Pixel Detector

    CERN Document Server

    Stramaglia, Maria Elena; The ATLAS collaboration

    2015-01-01

    In 2014, the Pixel Detector of the ATLAS experiment was extended by about 12 million pixels with the installation of the Insertable B-Layer (IBL). Data-taking and tuning procedures have been implemented by employing newly designed read-out hardware, which supports the full detector bandwidth even for calibration. The hardware is supported by an embedded software stack running on the read-out boards. The same boards will be used to upgrade the read-out bandwidth for the two outermost layers of the ATLAS Pixel Barrel (54 million pixels). We present the IBL read-out hardware and the supporting software architecture used to calibrate and operate the 4-layer ATLAS Pixel detector. We discuss the technical implementations and status for data taking, validation of the DAQ system in recent cosmic ray data taking, in-situ calibrations, and results from additional tests in preparation for Run 2 at the LHC.

  15. DAQ hardware and software development for the ATLAS Pixel Detector

    CERN Document Server

    Stramaglia, Maria Elena; The ATLAS collaboration

    2015-01-01

    In 2014, the Pixel Detector of the ATLAS experiment has been extended by about 12 million pixels thanks to the installation of the Insertable B-Layer (IBL). Data-taking and tuning procedures have been implemented along with newly designed read-out hardware to support high bandwidth for data readout and calibration. The hardware is supported by an embedded software stack running on the read-out boards. The same boards will be used to upgrade the read-out bandwidth for the two outermost layers of the ATLAS Pixel Barrel (54 million pixels). We present the IBL read-out hardware and the supporting software architecture used to calibrate and operate the 4-layer ATLAS Pixel detector. We discuss the technical implementations and status for data taking, validation of the DAQ system in recent cosmic ray data taking, in-situ calibrations, and results from additional tests in preparation for Run 2 at the LHC.

  16. DAQ hardware and software development for the ATLAS Pixel Detector

    Science.gov (United States)

    Stramaglia, Maria Elena

    2016-07-01

    In 2014, the Pixel Detector of the ATLAS experiment has been extended by about 12 million pixels thanks to the installation of the Insertable B-Layer (IBL). Data-taking and tuning procedures have been implemented along with newly designed readout hardware to support high bandwidth for data readout and calibration. The hardware is supported by an embedded software stack running on the readout boards. The same boards will be used to upgrade the readout bandwidth for the two outermost barrel layers of the ATLAS Pixel Detector. We present the IBL readout hardware and the supporting software architecture used to calibrate and operate the 4-layer ATLAS Pixel Detector. We discuss the technical implementations and status for data taking, validation of the DAQ system in recent cosmic ray data taking, in-situ calibrations, and results from additional tests in preparation for Run 2 at the LHC.

  17. ATLAS pixel IBL modules construction experience and developments for future upgrade

    International Nuclear Information System (INIS)

    The first upgrade of the ATLAS Pixel Detector is the Insertable B-Layer (IBL), installed in May 2014 in the core of ATLAS. Two different silicon sensor technologies, planar n-in-n and 3D, are used. Sensors are connected with the new generation 130 nm IBM CMOS FE-I4 read-out chip via solder bump-bonds. Production quality control tests were set up to verify and rate the performance of the modules before integration into staves. An overview of module design and construction, the quality control results and production yield will be discussed, as well as future developments foreseen for future detector upgrades

  18. ATLAS pixel IBL modules construction experience and developments for future upgrade

    Energy Technology Data Exchange (ETDEWEB)

    Gaudiello, A.

    2015-10-01

    The first upgrade of the ATLAS Pixel Detector is the Insertable B-Layer (IBL), installed in May 2014 in the core of ATLAS. Two different silicon sensor technologies, planar n-in-n and 3D, are used. Sensors are connected with the new generation 130 nm IBM CMOS FE-I4 read-out chip via solder bump-bonds. Production quality control tests were set up to verify and rate the performance of the modules before integration into staves. An overview of module design and construction, the quality control results and production yield will be discussed, as well as future developments foreseen for future detector upgrades.

  19. Advanced monolithic pixel sensors using SOI technology

    Science.gov (United States)

    Miyoshi, Toshinobu; Arai, Yasuo; Asano, Mari; Fujita, Yowichi; Hamasaki, Ryutaro; Hara, Kazuhiko; Honda, Shunsuke; Ikegami, Yoichi; Kurachi, Ikuo; Mitsui, Shingo; Nishimura, Ryutaro; Tauchi, Kazuya; Tobita, Naoshi; Tsuboyama, Toru; Yamada, Miho

    2016-07-01

    We are developing advanced pixel sensors using silicon-on-insulator (SOI) technology. A SOI wafer is used; top silicon is used for electric circuit and bottom silicon is used as a sensor. Target applications are high-energy physics, X-ray astronomy, material science, non-destructive inspection, medical application and so on. We have developed two integration-type pixel sensors, FPIXb and INTPIX7. These sensors were processed on single SOI wafers with various substrates in n- or p-type and double SOI wafers. The development status of double SOI sensors and some up-to-date test results of n-type and p-type SOI sensors are shown.

  20. Thin n-in-p planar pixel modules for the ATLAS upgrade at HL-LHC

    CERN Document Server

    Savic, N; Breuer, J; La Rosa, A; Macchiolo, A; Nisius, R; Terzo, S

    2016-01-01

    The ATLAS experiment will undergo a major upgrade of the tracker system in view of the high luminosity phase of the LHC (HL-LHC) foreseen to start around 2025. Thin planar pixel modules are promising candidates to instrument the new pixel system, thanks to the reduced contribution to the material budget and their high charge collection efficiency after irradiation. New designs of the pixel cells, with an optimized biasing structure, have been implemented in n-in-p planar pixel productions with sensor thicknesses of 270 um. Using beam tests, the gain in hit efficiency is investigated as a function of the received irradiation fluence. The outlook for future thin planar pixel sensor productions will be discussed, with a focus on thin sensors with a thickness of 100 and 150 um and a novel design with the optimized biasing structure and small pixel cells (50 um x 50 um and 25 um x 100 um). These dimensions are foreseen for the new ATLAS read-out chip in 65 nm CMOS technology and the fine segmentation will represen...

  1. ATLAS Inner Detector (Pixel Detector and Silicon Tracker)

    CERN Multimedia

    ATLAS Outreach

    2006-01-01

    To raise awareness of the basic functions of the Pixel Detector and Silicon Tracker in the ATLAS detector on the LHC at CERN. This colorful 3D animation is an excerpt from the film "ATLAS-Episode II, The Particles Strike Back." Shot with a bug's eye view of the inside of the detector. The viewer is taken on a tour of the inner workings of the detector, seeing critical pieces of the detector and hearing short explanations of how each works.

  2. Studio di un algoritmo lineare di ricostruzione analogica della posizione per il rivelatore a pixel di ATLAS

    CERN Document Server

    Arelli-Maffioli, A; Troncon, C; Lari, T

    2007-01-01

    A detailed study of spatial resolution of Atlas pixel sensors prototypes was performed. Charge interpolation was used and allowed for a significant improvement with respect to digital resolution. A simplified algorithm for charge interpolation was developed. Its application to both unirradiated and irradiated sensors is presented and discussed.

  3. Commissioning of the upgraded ATLAS Pixel Detector for Run2 at LHC

    CERN Document Server

    Dobos, Daniel; The ATLAS collaboration

    2015-01-01

    The Pixel Detector of the ATLAS experiment has shown excellent performance during the whole Run-1 of LHC. Taking advantage of the long showdown, the detector was extracted from the experiment and brought to surface, to equip it with new service quarter panels, to repair modules and to ease installation of the Insertable B-Layer (IBL), a fourth layer of pixel detectors, installed in May 2014 between the existing Pixel Detector and a new smaller radius beam-pipe at a radius of 3.3 cm. To cope with the high radiation and pixel occupancy due to the proximity to the interaction point, a new read-out chip and two different silicon sensor technologies (planar and 3D) have been developed. An overview of the refurbishing of the Pixel Detector and of the IBL project as well as early performance tests using cosmic rays and beam data will be presented.

  4. TFA pixel sensor technology for vertex detectors

    Energy Technology Data Exchange (ETDEWEB)

    Jarron, P. [CERN, CH-1211 Geneva 23 (Switzerland)]. E-mail: Pierre.Jarron@cern.ch; Moraes, D. [CERN, CH-1211 Geneva 23 (Switzerland)]. E-mail: Danielle.Moraes@cern.ch; Despeisse, M. [CERN, CH-1211 Geneva 23 (Switzerland); Dissertori, G. [ETH-Zurich, CH-8093 Zurich (Switzerland); Dunand, S. [IMT, Rue A.-L. Breguet 2, CH-2000 Neuchatel (Switzerland); Kaplon, J. [CERN, CH-1211 Geneva 23 (Switzerland); Miazza, C. [IMT, Rue A.-L. Breguet 2, CH-2000 Neuchatel (Switzerland); Shah, A. [IMT, Rue A.-L. Breguet 2, CH-2000 Neuchatel (Switzerland); Viertel, G.M. [ETH-Zurich, CH-8093 Zurich (Switzerland); Wyrsch, N. [IMT, Rue A.-L. Breguet 2, CH-2000 Neuchatel (Switzerland)

    2006-05-01

    Pixel microvertex detectors at the SLHC and a future linear collider face very challenging issues: extreme radiation hardness, cooling design, interconnections density and fabrication cost. As an alternative approach we present a novel pixel detector based on the deposition of a Hydrogenated Amorphous Silicon (a-Si:H) film on top of a readout ASIC. The Thin-Film on ASIC (TFA) technology is inspired by an emerging microelectronic technology envisaged for visible light Active Pixel Sensor (APS) devices. We present results obtained with a-Si:H sensor films deposited on a glass substrate and on ASIC, including the radiation hardness of this material up to a fluence of 3.5x10{sup 15} p/cm{sup 2}.

  5. TFA pixel sensor technology for vertex detectors

    International Nuclear Information System (INIS)

    Pixel microvertex detectors at the SLHC and a future linear collider face very challenging issues: extreme radiation hardness, cooling design, interconnections density and fabrication cost. As an alternative approach we present a novel pixel detector based on the deposition of a Hydrogenated Amorphous Silicon (a-Si:H) film on top of a readout ASIC. The Thin-Film on ASIC (TFA) technology is inspired by an emerging microelectronic technology envisaged for visible light Active Pixel Sensor (APS) devices. We present results obtained with a-Si:H sensor films deposited on a glass substrate and on ASIC, including the radiation hardness of this material up to a fluence of 3.5x1015 p/cm2

  6. Experience on 3D Silicon Sensors for ATLAS IBL

    CERN Document Server

    Darbo, Giovanni

    2015-01-01

    3D silicon sensors, where plasma micro-machining is used to etch deep narrow apertures in the silicon substrate to form electrodes of PIN junctions, represent possible solutions for inner pixel layers of the tracking detectors in high energy physics experiments. This type of sensors has been developed for the Insertable B-Layer (IBL), an additional pixel layer that has been installed in ATLAS during the present shutdown of the LHC collider at CERN. It is presented here the experience in designing, testing and qualifying sensors and detector modules that have been used to equip part of the IBL. Based on the gained experience with 3D silicon sensors for the ATLAS IBL, we discuss possible new developments for the upgrade of ATLAS and CMS at the high-luminosity LHC (HL-LHC).

  7. Experience on 3D silicon sensors for ATLAS IBL

    International Nuclear Information System (INIS)

    3D silicon sensors, where plasma micro-machining is used to etch deep narrow apertures in the silicon substrate to form electrodes of PIN junctions, represent possible solutions for inner pixel layers of the tracking detectors in high energy physics experiments. This type of sensors has been developed for the Insertable B-Layer (IBL), an additional pixel layer that has been installed in ATLAS during the present shutdown of the LHC collider at CERN. It is presented here the experience in designing, testing and qualifying sensors and detector modules that have been used to equip part of the IBL. Based on the gained experience with 3D silicon sensors for the ATLAS IBL, we discuss possible new developments for the upgrade of ATLAS and CMS at the high-luminosity LHC (HL-LHC)

  8. Experience on 3D silicon sensors for ATLAS IBL

    Science.gov (United States)

    Darbo, G.

    2015-05-01

    3D silicon sensors, where plasma micro-machining is used to etch deep narrow apertures in the silicon substrate to form electrodes of PIN junctions, represent possible solutions for inner pixel layers of the tracking detectors in high energy physics experiments. This type of sensors has been developed for the Insertable B-Layer (IBL), an additional pixel layer that has been installed in ATLAS during the present shutdown of the LHC collider at CERN. It is presented here the experience in designing, testing and qualifying sensors and detector modules that have been used to equip part of the IBL. Based on the gained experience with 3D silicon sensors for the ATLAS IBL, we discuss possible new developments for the upgrade of ATLAS and CMS at the high-luminosity LHC (HL-LHC).

  9. Development of radiation hard CMOS active pixel sensors for HL-LHC

    Science.gov (United States)

    Pernegger, Heinz

    2016-07-01

    New pixel detectors, based on commercial high voltage and/or high resistivity full CMOS processes, hold promise as next-generation active pixel sensors for inner and intermediate layers of the upgraded ATLAS tracker. The use of commercial CMOS processes allow cost-effective detector construction and simpler hybridisation techniques. The paper gives an overview of the results obtained on AMS-produced CMOS sensors coupled to the ATLAS Pixel FE-I4 readout chips. The SOI (silicon-on-insulator) produced sensors by XFAB hold great promise as radiation hard SOI-CMOS sensors due to their combination of partially depleted SOI transistors reducing back-gate effects. The test results include pre-/post-irradiation comparison, measurements of charge collection regions as well as test beam results.

  10. Front-End electronics and integration of ATLAS pixel modules

    Science.gov (United States)

    Hügging, F.; ATLAS Pixel Collaboration

    2005-09-01

    For the ATLAS Pixel Detector fast readout electronics has been successfully developed and tested. Main attention was given to the ability to detect small charges in the order of 5,000 e - within 25 ns in the harsh radiation environment of LHC together with the challenge to cope with the huge amount of data generated by the 80 million channels of the Pixel detector. For the integration of the 50 μm pitch hybrid pixel detector, reliable bump bonding techniques using either lead-tin or indium bumps has been developed and has been successfully tested for large-scale production.

  11. Front-End electronics and integration of ATLAS pixel modules

    CERN Document Server

    Hügging, F G

    2005-01-01

    For the ATLAS Pixel Detector fast readout electronics has been successfully developed and tested. Main attention was given to the ability to detect small charges in the order of 5,000 electrons within 25 ns in the harsh radiation environment of LHC together with the challenge to cope with the huge amount of data generated by the 80 millions channels of the Pixel detector. For the integration of the 50 micron pitch hybrid pixel detector reliable bump bonding techniques using either lead-tin or indium bumps has been developed and has been successfully tested for large scale production.

  12. The ATLAS pixel stave emulator for serial powering

    International Nuclear Information System (INIS)

    A serial powering scheme is being developed for the upgrade of the ATLAS pixel detector in view of sLHC. It offers in fact significant advantages over the presently used parallel powering scheme, namely reduced material budget in active area and power losses on cables, smaller number of power supplies, and no need for external, distant regulation of voltages. The development of this powering scheme requires not only the design of custom-developed voltage regulators, the basic elements of serial powering, but also the early study of system aspects connected to it, for instance the safety of the powering chain and AC-coupled data transmission. To this aim a test system emulating an ATLAS pixel stave is being developed. It will provide a realistic environment to test both concepts and sub-components. Due to its flexibility, it will offer the possibility to study not only serial powering concepts, but more generally system aspects related to the ATLAS pixel detector. In particular alternative powering schemes, data coding schemes, physical layer data transmission, and Detector Control System concepts will also be evaluated with this test system. The description and development of the ATLAS pixel stave emulator are presented and first results are discussed

  13. FE-I4 Chip Development for Upgraded ATLAS Pixel Detector at LHC

    CERN Document Server

    Barbero, M; The ATLAS collaboration

    2010-01-01

    A new ATLAS pixel chip FE-I4 has been developed for use in upgraded LHC luminosity environments, including the near-term Insertable B-Layer upgrade. FE-I4 is designed in a 130 nm CMOS technology, presenting advantages in terms of radiation tolerance and digital logic density compared to the 0.25 μm CMOS technology used for the current ATLAS pixel IC, FE-I3. FE-I4 architecture is based on an array of 80×336 pixels, each 50×250 μm2, consisting of analog and digital sections. The analog pixel section is designed for low power consumption and compatibility to several sensor candidates. It is based on a two-stage architecture with a pre-amp AC-coupled to a second stage of amplification. It features leakage current compensation circuitry, local 4-bit pre-amp feedback tuning and a discriminator locally adjusted through 5 configuration bits. The digital architecture is based on a 4-pixel unit called Pixel Digital Region (PDR) allowing for local storage of hits in 5-deep data buffers at pixel level for the duratio...

  14. ATLAS Pixel IBL Modules Construction Experience and Developments for Future Upgrade

    CERN Document Server

    Gaudiello, Andrea; The ATLAS collaboration

    2015-01-01

    The first upgrade of the ATLAS Pixel Detector is the Insertable B-Layer (IBL), just installed in May 2014 in the core of ATLAS. Two different silicon sensor technologies, planar n-in-n and 3D, were used, connected with the new generation 130nm IBM CMOS FE-I4 readout chip via solder bump-bonds. Production quality control tests were set up to verify and rate the performance of the modules before integration into staves. An overview of module design and construction, the quality control results and production yield will be discussed, as well as future developments foreseen for future detector upgrades.

  15. ATLAS Pixel IBL modules construction experience and developments for future upgrade

    CERN Document Server

    Gaudiello, A; The ATLAS collaboration

    2014-01-01

    The first upgrade of the ATLAS Pixel Detector is the Insertable B-Layer (IBL), just installed in May 2014 in the core of ATLAS. Two different silicon sensor technologies, planar n-in-n and 3D, were used, connected with the new generation 130nm IBM CMOS FE-I4 readout chip via solder bump-bonds. Production quality control tests were set up to verify and rate the performance of the modules before integration into staves. An overview of module design and construction, the quality control results and production yield will be discussed, as well as future developments foreseen for future detector upgrades.

  16. Studies on irradiated pixel detectors for the ATLAS IBL and HL-LHC upgrade

    International Nuclear Information System (INIS)

    The constant demand for higher luminosity in high energy physics is the reason for the continuous effort to adapt the accelerators and the experiments. The upgrade program for the experiments and the accelerators at CERN already includes several expansion stages of the Large Hadron Collider (LHC) which will increase the luminosity and the energy of the accelerator. Simultaneously the LHC experiments prepare the individual sub-detectors for the increasing demands in the coming years. Especially the tracking detectors have to cope with fluence levels unprecedented for high energy physics experiments. Correspondingly to the fluence increases the impact of the radiation damage which reduces the life time of the detectors by decreasing the detector performance and efficiency. To cope with this effect new and more radiation hard detector concepts become necessary to extend the life time. This work concentrates on the impact of radiation damage on the pixel sensor technologies to be used in the next upgrade of the ATLAS Pixel Detector as well as for applications in the ATLAS Experiment at HL-LHC conditions. The sensors considered in this work include various designs based on silicon and diamond as sensor material. The investigated designs include a planar silicon pixel design currently used in the ATLAS Experiment as well as a 3D pixel design which uses electrodes penetrating the entire sensor material. The diamond designs implement electrodes similar to the design used by the planar technology with diamond sensors made out of single- and poly-crystalline material. To investigate the sensor properties characterization tests are performed before and after irradiation with protons or neutrons. The measurements are used to determine the interaction between the read-out electronics and the sensors to ensure the signal transfer after irradiation. Further tests focus on the sensor performance itself which includes the analysis of the leakage current behavior and the charge

  17. The upgraded Pixel Detector of the ATLAS Experiment for Run2 at the Large Hadron Collider

    CERN Document Server

    Backhaus, Malte; The ATLAS collaboration

    2015-01-01

    During Run-1 of the Large Hadron Collider (LHC), the ATLAS Pixel Detector has shown excellent performance. The ATLAS collaboration took advantage of the first long shutdown of the LHC during 2013 and 2014 and extracted the ATLAS Pixel Detector from the experiment, brought it to surface and maintained the services. This includes the installation of new service quarter panels, the repair of cables, and the installation of the new Diamond Beam Monitor (DBM). Additionally a completely new innermost pixel detector layer, the Insertable B-Layer (IBL), was constructed and installed in May 2014 between a new smaller beam pipe and the existing Pixel Detector. With a radius of 3.3 cm the IBL is located extremely close to the interaction point. Therefore a new readout chip and two new sensor technologies (planar and 3D) are used in IBL. In order to achieve best possible physics performance the material budget was improved with respect to the existing Pixel Detector. This is realized using lightweight staves for mechanic...

  18. TCAD Simulations of ATLAS Pixel Guard Ring and Edge Structure for SLHC Upgrade

    CERN Document Server

    Lounis, A; The ATLAS collaboration; Calderini, G; Marchiori, G; Benoit, M; Dinu, N

    2010-01-01

    In this work, the magnitude of the electric field and the depletion inside a simplified two dimensional model of the ATLAS planar pixel sensor for the insertable b-layer and the super-LHC upgrade have been studied. The parameters influencing the breakdown behavior were studied using a finite-element method to solve the drift-diffusion equations coupled to Poisson's equation. Using these models, the number of guard rings, dead edge width and sensor's thickness were modified with respect to the ATLAS actual pixel sensor to investigate their influence on the sensor's depletion at the edge and on its internal electrical field distribution. The goal of the simulation is to establish a model to discriminate between different designs and to select the most optimized to fit the needs in radiation hardness and low material budget of ATLAS inner detector during super-LHC operation. A three defects level model has been implemented in the simulations to study the behavior of such sensors under different level of irradiat...

  19. A Leakage Current-based Measurement of the Radiation Damage in the ATLAS Pixel Detector

    CERN Document Server

    Gorelov, Igor; The ATLAS collaboration

    2015-01-01

    A measurement has been made of the radiation damage incurred by the ATLAS Pixel Detector barrel silicon modules from the beginning of operations through the end of 2012. This translates to hadronic fluence received over the full period of operation at energies up to and including 8 TeV. The measurement is based on a per-module measurement of the silicon sensor leakage current. The results are presented as a function of integrated luminosity and compared to predictions by the Hamburg Model. This information can be used to predict limits on the lifetime of the Pixel Detector due to current, for various operating scenarios.

  20. Simulation of guard ring influence on the performance of ATLAS pixel detectors for inner layer replacement

    Energy Technology Data Exchange (ETDEWEB)

    Benoit, M; Lounis, A; Dinu, N [Laboratoire de l' accelerateur lineaire, Orsay (France)], E-mail: Benoit@lal.in2p3.fr

    2009-03-15

    Electric field magnitude and depletion in the bulk of silicon pixel detectors, which influence its breakdown behaviour, was studied using finite-element method to solve the drift-diffusion equation coupled to Poisson's equation in a simplified two dimensional model of the ATLAS pixel sensor. Based on this model, the number of guard rings and dead edges width were modified to investigate their influence on the detector's depletion at the edge and on its internal electrical field distribution. Finally, the 3 level model was implemented into the simulation to study the behaviour of such detector under different level of irradiation.

  1. Noise in a CMOS digital pixel sensor

    Institute of Scientific and Technical Information of China (English)

    Zhang Chi; Yao Suying; Xu Jiangtao

    2011-01-01

    Based on the study of noise performance in CMOS digital pixel sensor (DPS),a mathematical model of noise is established with the pulse-width-modulation (PWM) principle.Compared with traditional CMOS image sensors,the integration time is different and A/D conversion is implemented in each PWM DPS pixel.Then,the quantitative calculating formula of system noise is derived.It is found that dark current shot noise is the dominant noise source in low light region while photodiode shot noise becomes significantly important in the bright region.In this model,photodiode shot noise does not vary with luminance,but dark current shot noise does.According to increasing photodiode capacitance and the comparator's reference voltage or optimizing the mismatch in the comparator,the total noise can be reduced.These results serve as a guideline for the design of PWM DPS.

  2. Noise in a CMOS digital pixel sensor

    International Nuclear Information System (INIS)

    Based on the study of noise performance in CMOS digital pixel sensor (DPS), a mathematical model of noise is established with the pulse-width-modulation (PWM) principle. Compared with traditional CMOS image sensors, the integration time is different and A/D conversion is implemented in each PWM DPS pixel. Then, the quantitative calculating formula of system noise is derived. It is found that dark current shot noise is the dominant noise source in low light region while photodiode shot noise becomes significantly important in the bright region. In this model, photodiode shot noise does not vary with luminance, but dark current shot noise does. According to increasing photodiode capacitance and the comparator's reference voltage or optimizing the mismatch in the comparator, the total noise can be reduced. These results serve as a guideline for the design of PWM DPS. (semiconductor integrated circuits)

  3. Heavily irradiated N-in-p thin planar pixel sensors with and without active edges

    Science.gov (United States)

    Terzo, S.; Andricek, L.; Macchiolo, A.; Moser, H. G.; Nisius, R.; Richter, R. H.; Weigell, P.

    2014-05-01

    We present the results of the characterization of silicon pixel modules employing n-in-p planar sensors with an active thickness of 150 μm, produced at MPP/HLL, and 100-200 μm thin active edge sensor devices, produced at VTT in Finland. These thin sensors are designed as candidates for the ATLAS pixel detector upgrade to be operated at the HL-LHC, as they ensure radiation hardness at high fluences. They are interconnected to the ATLAS FE-I3 and FE-I4 read-out chips. Moreover, the n-in-p technology only requires a single side processing and thereby it is a cost-effective alternative to the n-in-n pixel technology presently employed in the LHC experiments. High precision beam test measurements of the hit efficiency have been performed on these devices both at the CERN SpS and at DESY, Hamburg. We studied the behavior of these sensors at different bias voltages and different beam incident angles up to the maximum one expected for the new Insertable B-Layer of ATLAS and for HL-LHC detectors. Results obtained with 150 μm thin sensors, assembled with the new ATLAS FE-I4 chip and irradiated up to a fluence of 4 × 1015 neq/cm2, show that they are excellent candidates for larger radii of the silicon pixel tracker in the upgrade of the ATLAS detector at HL-LHC. In addition, the active edge technology of the VTT devices maximizes the active area of the sensor and reduces the material budget to suit the requirements for the innermost layers. The edge pixel performance of VTT modules has been investigated at beam test experiments and the analysis after irradiation up to a fluence of 5 × 1015 neq/cm2 has been performed using radioactive sources in the laboratory.

  4. ATLAS Pixel Group - Photo Gallery from Irradiation

    CERN Multimedia

    2001-01-01

    Photos 1,2,3,4,5,6,7 - Photos taken before irradiation of Pixel Test Analog Chip and Pmbars (April 2000) Photos 8,9,10,11 - Irradiation of VDC chips (May 2000) Photos 12, 13 - Irradiation of Passive Components (June 2000) Photos 14,15, 16 - Irradiation of Marebo Chip (November 1999)

  5. Robustness of the ATLAS pixel clustering neural network algorithm

    CERN Document Server

    Sidebo, Per Edvin; The ATLAS collaboration

    2016-01-01

    Proton-proton collisions at the energy frontier puts strong constraints on track reconstruction algorithms. In the ATLAS track reconstruction algorithm, an artificial neural network is utilised to identify and split clusters of neighbouring read-out elements in the ATLAS pixel detector created by multiple charged particles. The robustness of the neural network algorithm is presented, probing its sensitivity to uncertainties in the detector conditions. The robustness is studied by evaluating the stability of the algorithm's performance under a range of variations in the inputs to the neural networks. Within reasonable variation magnitudes, the neural networks prove to be robust to most variation types.

  6. Development of n-in-p pixel modules for the ATLAS Upgrade at HL-LHC

    CERN Document Server

    Macchiolo, Anna; Savic, Natascha; Terzo, Stefano

    2016-01-01

    Thin planar pixel modules are promising candidates to instrument the inner layers of the new ATLAS pixel detector for HL-LHC, thanks to the reduced contribution to the material budget and their high charge collection efficiency after irradiation. 100-200 $\\mu$m thick sensors, interconnected to FE-I4 read-out chips, have been characterized with radioactive sources and beam tests at the CERN-SPS and DESY. The results of these measurements are reported for devices before and after irradiation up to a fluence of $14\\times10^{15}$ n$_{eq}$/cm$^2$. The charge collection and tracking efficiency of the different sensor thicknesses are compared. The outlook for future planar pixel sensor production is discussed, with a focus on sensor design with the pixel pitches (50x50 and 25x100 $\\mu$m$^2$) foreseen for the RD53 Collaboration read-out chip in 65 nm CMOS technology. An optimization of the biasing structures in the pixel cells is required to avoid the hit efficiency loss presently observed in the punch-through region...

  7. Development of n-in-p pixel modules for the ATLAS upgrade at HL-LHC

    CERN Document Server

    Macchiolo, A.; Savic, N.; Terzo, S.

    2016-01-01

    Thin planar pixel modules are promising candidates to instrument the inner layers of the new ATLAS pixel detector for HL-LHC, thanks to the reduced contribution to the material budget and their high charge collection efficiency after irradiation. 100–200 μm thick sensors, interconnected to FE-I4 read-out chips, have been characterized with radioactive sources and beam tests at the CERN-SPS and DESY. The results of these measurements are reported for devices before and after irradiation up to a fluence of 14×1015 neq/cm2. The charge collection and tracking efficiency of the different sensor thicknesses are compared. The outlook for future planar pixel sensor production is discussed, with a focus on sensor design with the pixel pitches (50×50 and 25×100 μm2) foreseen for the RD53 Collaboration read-out chip in 65 nm CMOS technology. An optimization of the biasing structures in the pixel cells is required to avoid the hit efficiency loss presently observed in the punch-through region after irradiation. F...

  8. Optical Links for the ATLAS Pixel Detector

    CERN Document Server

    Gregor, Ingrid-Maria

    In der vorliegenden Dissertation wird eine strahlentolerante optische Datenstrecke mit hoher Datenrate für den Einsatz in dem Hochenergiephysikexperiment Atlas am Lhc Beschleuniger entwickelt. Da die Lhc-Experimente extremen Strahlenbelastungen ausgesetzt sind, müssen die Komponenten spezielle Ansprüche hinsichtlich der Strahlentoleranz erfüllen. Die Qualifikation der einzelnen Bauteile wurde im Rahmen dieser Arbeit durchgeführt. Die zu erwartenden Fluenzen im Atlas Inner Detector für Silizium und Gallium Arsenid (GaAs) wurden berechnet. Siliziumbauteile werden einer Fluenz von bis zu 1.1.1015neq /cm2 in 1 MeV äquivalenten Neutronen ausgesetzt sein, wohingegen GaAs Bauteile bis zu 7.8.1015neq /cm2 ausgesetzt sein werden. Die Strahlentoleranz der einzelnen benötigten Komponenten wie z.B. der Laserdioden sowie der jeweiligen Treiberchips wurde untersucht. Sowohl die Photo- als auch die Laserdioden haben sich als strahlentolerant für die Fluenzen an dem vorgesehenen Radius erwiesen. Aus de...

  9. Radiation effects on active pixel sensors (APS)

    International Nuclear Information System (INIS)

    Active pixel sensor (APS) is a new generation of image sensors which presents several advantages relatively to charge coupled devices (CCDs) particularly for space applications (APS requires only 1 voltage to operate which reduces considerably current consumption). Irradiation was performed using 60Co gamma radiation at room temperature and at a dose rate of 150 Gy(Si)/h. 2 types of APS have been tested: photodiode-APS and photoMOS-APS. The results show that photoMOS-APS is more sensitive to radiation effects than photodiode-APS. Important parameters of image sensors like dark currents increase sharply with dose levels. Nevertheless photodiode-APS sensitivity is one hundred time lower than photoMOS-APS sensitivity

  10. The Pixel Detector of the ATLAS Experiment for the Run 2 at the Large Hadron Collider

    CERN Document Server

    Mandelli, B; The ATLAS collaboration

    2014-01-01

    The Pixel Detector of the ATLAS experiment has shown excellent performance during the whole Run 1 of LHC. Taking advantage of the long shutdown, the detector was extracted from the experiment and brought to surface, to equip it with new service quarter panels, to repair modules and to ease installation of the Insertable B-Layer (IBL). The IBL is a fourth layer of pixel detectors, and has been installed in May 2014 between the existing Pixel Detector and a new smaller radius beam-pipe. To cope with the high radiation and pixel occupancy due to the proximity to the interaction point, a new read-out chip and two different silicon sensor technologies (planar and 3D) have been developed. Furthermore, the physics performance will be improved through the reduction of pixel size while, targeting for a low material budget, a new mechanical support using lightweight staves and a CO$_2$ based cooling system have been adopted. The IBL construction and installation in the ATLAS Experiment has been completed very successfu...

  11. Neural network based cluster reconstruction in the ATLAS silicon Pixel Detector

    International Nuclear Information System (INIS)

    The hit signals read out from pixels on planar semi-conductor sensors are grouped into clusters, to reconstruct the location where a charged particle passed through. The spatial resolution of the pixel detector can be improved significantly using the information from the cluster of adjacent pixels. Such analogue cluster creation techniques have been used by the ATLAS experiment for many years giving an excellent performance. However, in dense environments, such as those inside high-energy jets, it is likely that the charge deposited by two or more close-by tracks merges into one single cluster. A clusterization algorithm based on neural network methods has been developed for the ATLAS Pixel Detector. This can identify the shared clusters, split them if necessary, and estimate the positions of all particles traversing the cluster. The algorithm significantly reduces ambiguities in the assignment of pixel detector measurements to tracks within jets, and improves the positional accuracy with respect to standard interpolation techniques, by the use of the 2-dimensional charge distribution information. The reconstruction using the neural network reduces strongly the number of hits shared by more than one track and improves the resolution of the impact parameter by about 15%.

  12. The upgraded Pixel Detector of the ATLAS experiment for Run-2 at the Large Hadron Collider

    International Nuclear Information System (INIS)

    The Pixel Detector of the ATLAS experiment has shown excellent performance during the whole Run-1 of the Large Hadron Collider (LHC) . Taking advantage of Long Shutdown 1 (LS1) during 2014/2015, the Pixel Detector was brought to surface to equip it with new service panels and to repair modules. The Insertable B-Layer (IBL), a fourth layer of pixel sensors, was installed in-between the existing Pixel Detector and a new beam-pipe at a radius of 3.3 cm. To cope with the high radiation and increased pixel occupancy due to the proximity to the interaction point, two different silicon sensor technologies (planar and 3D) were used and a new readout chip has been designed with CMOS 130 nm technology with larger area, smaller pixel size and faster readout capability. Dedicated design features in combination with a new composite material were considered and used in order to reduce the material budget of the support structure while keeping the optimal thermo-mechanical performance. An overview of the lessons learned during the IBL project is presented, focusing on the challenges and highlighting the issues met during the production, integration, installation and commissioning phases of the detector. Early performance tests using cosmic and beam data are also presented

  13. 3D silicon pixel detectors for the ATLAS Forward Physics experiment

    CERN Document Server

    Lange, Jörn; Grinstein, Sebastian; Paz, Ivan Lopez

    2015-01-01

    The ATLAS Forward Physics (AFP) project plans to install 3D silicon pixel detectors about 210 m away from the interaction point and very close to the beamline (2-3 mm). This implies the need of slim edges of about 100-200 $\\mu$m width for the sensor side facing the beam to minimise the dead area. Another challenge is an expected non-uniform irradiation of the pixel sensors. It is studied if these requirements can be met using slightly-modified FE-I4 3D pixel sensors from the ATLAS Insertable B-Layer production. AFP-compatible slim edges are obtained with a simple diamond-saw cut. Electrical characterisations and beam tests are carried out and no detrimental impact on the leakage current and hit efficiency is observed. For devices without a 3D guard ring a remaining insensitive edge of less than 15 $\\mu$m width is found. Moreover, 3D detectors are non-uniformly irradiated up to fluences of several 10$^{15}$ n$_{eq}$/cm$^2$ with either a focussed 23 GeV proton beam or a 23 MeV proton beam through holes in Al ma...

  14. Calibration analysis software for the ATLAS Pixel Detector

    Science.gov (United States)

    Stramaglia, Maria Elena

    2016-07-01

    The calibration of the ATLAS Pixel Detector at LHC fulfils two main purposes: to tune the front-end configuration parameters for establishing the best operational settings and to measure the tuning performance through a subset of scans. An analysis framework has been set up in order to take actions on the detector given the outcome of a calibration scan (e.g. to create a mask for disabling noisy pixels). The software framework to control all aspects of the Pixel Detector scans and analyses is called calibration console. The introduction of a new layer, equipped with new FE-I4 chips, required an update of the console architecture. It now handles scans and scan analyses applied together to chips with different characteristics. An overview of the newly developed calibration analysis software will be presented, together with some preliminary results.

  15. Calibration Analysis Software for the ATLAS Pixel Detector

    CERN Document Server

    Stramaglia, Maria Elena; The ATLAS collaboration

    2015-01-01

    The calibration of the ATLAS Pixel detector at LHC fulfils two main purposes: to tune the front-end configuration parameters for establishing the best operational settings and to measure the tuning performance through a subset of scans. An analysis framework has been set up in order to take actions on the detector given the outcome of a calibration scan (e.g. to create a mask for disabling noisy pixels). The software framework to control all aspects of the Pixel detector scans and analyses is called Calibration Console. The introduction of a new layer, equipped with new Front End-I4 Chips, required an update the Console architecture. It now handles scans and scans analyses applied together to chips with different characteristics. An overview of the newly developed Calibration Analysis Software will be presented, together with some preliminary result.

  16. Development of hybrid pixel detectors for proton-proton collisions in the ATLAS experiment at the Large Hadron Collider at CERN

    International Nuclear Information System (INIS)

    The ATLAS experiment at the future large hadron collider at CERN uses a silicon pixel detector as the innermost tracking device. The detector is built using ∼2000 modules which consist of a silicon sensor and 16 bump bonded VLSI electronic readout chips with ∼3000 channels per chip. The requirements for the sensor and the 1.4 x 108 preamplifier channels are discussed. The architectures of several existing readout chips are described. Detailed laboratory measurements have been performed on all chips and the results are compared to the requirements of ATLAS. The performance of a first ATLAS compatible pixel detector assembly in a test beam at CERN is presented. (orig.)

  17. Design and tests of offset-compensated in-pixel amplifiers for CMOS pixel sensors

    International Nuclear Information System (INIS)

    This paper presents novel in-pixel amplifiers for CMOS pixel sensors. Two kinds of offset-compensated amplifiers allow the sensors to achieve a high signal-to-noise ratio. Based on theoretical analysis, the gain of the input offset-compensated amplifier is less sensitive to threshold voltage variation than the output offset-compensated amplifier. A 12μm pitch CMOS pixel sensor with the input offset-compensated amplifier was therefore designed and fabricated in a 0.13μm CMOS technology. Measurements indicate that the implementation of this amplifier can result in a high signal-to-noise ratio for a CMOS pixel sensor.

  18. Planar pixel detector module development for the HL-LHC ATLAS pixel system

    Energy Technology Data Exchange (ETDEWEB)

    Bates, Richard L., E-mail: richard.bates@glasgow.ac.uk [SUPA School of Physics and Astronomy, University of Glasgow, Glasgow G12 8QQ (United Kingdom); Buttar, C.; Stewart, A.; Blue, A.; Doonan, K.; Ashby, J. [SUPA School of Physics and Astronomy, University of Glasgow, Glasgow G12 8QQ (United Kingdom); Casse, G.; Dervan, P.; Forshaw, D.; Tsurin, I. [The University of Liverpool, Liverpool (United Kingdom); Brown, S.; Pater, J. [The Univiersty of Manchester, Manchester (United Kingdom)

    2013-12-11

    The ATLAS pixel detector for the HL-LHC requires the development of large area pixel modules that can withstand doses up to 10{sup 16} 1 MeV n{sub eq} cm{sup −2}. The area of the pixel detector system will be over 5 m{sup 2} and as such low cost, large area modules are required. The development of a quad module based on 4 FE-I4 readout integrated chips (ROIC) will be discussed. The FE-I4 ROIC is a large area chip and the yield of the flip-chip process to form an assembly is discussed for single chip assemblies. The readout of the quad module for laboratory tests will be reported.

  19. Planar pixel detector module development for the HL-LHC ATLAS pixel system

    Science.gov (United States)

    Bates, Richard L.; Buttar, C.; Stewart, A.; Blue, A.; Doonan, K.; Ashby, J.; Casse, G.; Dervan, P.; Forshaw, D.; Tsurin, I.; Brown, S.; Pater, J.

    2013-12-01

    The ATLAS pixel detector for the HL-LHC requires the development of large area pixel modules that can withstand doses up to 1016 1 MeV neq cm-2. The area of the pixel detector system will be over 5 m2 and as such low cost, large area modules are required. The development of a quad module based on 4 FE-I4 readout integrated chips (ROIC) will be discussed. The FE-I4 ROIC is a large area chip and the yield of the flip-chip process to form an assembly is discussed for single chip assemblies. The readout of the quad module for laboratory tests will be reported.

  20. Planar pixel detector module development for the HL-LHC ATLAS pixel system

    International Nuclear Information System (INIS)

    The ATLAS pixel detector for the HL-LHC requires the development of large area pixel modules that can withstand doses up to 1016 1 MeV neq cm−2. The area of the pixel detector system will be over 5 m2 and as such low cost, large area modules are required. The development of a quad module based on 4 FE-I4 readout integrated chips (ROIC) will be discussed. The FE-I4 ROIC is a large area chip and the yield of the flip-chip process to form an assembly is discussed for single chip assemblies. The readout of the quad module for laboratory tests will be reported

  1. Experiences with module-production and system tests for the ATLAS Pixel Detector

    Science.gov (United States)

    Grosse-Knetter, Jörn; Hügging, Fabian; Mättig, Peter; Reeves, Kendall; Schultes, Joachim; Weingarten, Jens; Wermes, Norbert

    2006-09-01

    The ATLAS pixel detector is built from 1744 modules which are organized in three barrel layers and three disk layers in forward direction. The modules consist of an oxygen-enriched silicon sensor with an active area of 60.8×16.4 mm2. Its 46 080 pixels are read out by 16 frontend chips, bump bonded to the sensor using a state-of-the-art hybridization technique. After extensive characterization of the single modules they are mounted on support structures, made from a carbon-carbon composite material, which make up the barrel or the disc layers. The first of these assemblies are used to study the behavior of the modules outside the lab environment.

  2. Pixel detector modules performance for ATLAS IBL and future pixel detectors

    CERN Document Server

    AUTHOR|(INSPIRE)INSPIRE-00355104; Pernegger, Heinz

    2015-11-06

    The ATLAS Detector is one of the four big particle physics experiments at CERN’s LHC. Its innermost tracking system consisted of the 3-Layer silicon Pixel Detector (~80M readout channels) in the first run (2010-2012). Over the past two years it was refurbished and equipped with new services as well as a new beam monitor. The major upgrade, however, was the Insertable B-Layer (IBL). It adds ~12M readout channels for improved vertexing, tracking robustness and b-tagging performance for the upcoming runs, before the high luminosity upgrade of the LHC will take place. This thesis covers two main aspects of Pixel detector performance studies: The main work was the planning, commissioning and operation of a test bench that meets the requirements of current pixel detector components. Each newly built ATLAS IBL stave was thoroughly tested, following a specifically developed procedure, and initially calibrated in that setup. A variety of production accompanying measurements as well as preliminary results after integ...

  3. The Pixel Detector of the ATLAS Experiment for LHC Run-2

    CERN Document Server

    Pernegger, H; The ATLAS collaboration

    2014-01-01

    The Pixel Detector of the ATLAS experiment has shown excellent performance during the whole Run-1 of LHC. Taking advantage of the long showdown, the detector was extracted from the experiment and brought to surface, to equip it with new service quarter panels, to repair modules and to ease installation of the Insertable B-Layer (IBL). IBL is a fourth layer of pixel detectors, and has been installed in May 2014 between the existing Pixel Detector and a new smaller radius beam-pipe at a radius of 3.3 cm. To cope with the high radiation and pixel occupancy due to the proximity to the interaction point, a new read-out chip and two different silicon sensor technologies (planar and 3D) have been developed. Furthermore, the physics performance will be improved through the reduction of pixel size while, targeting for a low material budget, a new mechanical support using lightweight staves and a CO2 based cooling system have been adopted. An overview of the refurbishing of the Pixel Detector and of the IBL project as ...

  4. The Pixel Detector of the ATLAS experiment for the Run2 at the Large Hadron Collider

    CERN Document Server

    Takubo, Yosuke

    2015-01-01

    The Pixel Detector of the ATLAS experiment has shown excellent performance during the whole Run-1 of LHC. Taking advantage of the long showdown, the detector was extracted from the experiment and brought to surface, to equip it with new service quarter panels, to repair modules and to ease installation of the Insertable B-Layer (IBL). IBL is a fourth layer of pixel detectors, and has been installed in May 2014 between the existing Pixel Detector and a new smaller radius beam-pipe at a radius of 3.3 cm. To cope with the high radiation and pixel occupancy due to the proximity to the interaction point, a new read-out chip and two different silicon sensor technologies (planar and 3D) have been developed. Furthermore, the physics performance will be improved through the reduction of pixel size while, targeting for a low material budget, a new mechanical support using lightweight staves and a CO2 based cooling system have been adopted. An overview of the refurbishing of the Pixel Detect or and of the IBL project as...

  5. The ATLAS Pixel Detector for Run II at the Large Hadron Collider

    CERN Document Server

    Marx, Marilyn; The ATLAS collaboration

    2014-01-01

    The Pixel Detector of the ATLAS experiment has shown excellent performance during the whole Run-1 of LHC. Taking advantage of the long showdown, the detector was extracted from the experiment and brought to surface, to equip it with new service quarter panels, to repair modules and to ease installation of the Insertable B-Layer (IBL). IBL is a fourth layer of pixel detectors, and has been installed in May 2014 between the existing Pixel Detector and a new smaller radius beam-pipe at a radius of 3.3 cm. To cope with the high radiation and pixel occupancy due to the proximity to the interaction point, a new read-out chip and two different silicon sensor technologies (planar and 3D) have been developed. Furthermore, the physics performance will be improved through the reduction of pixel size while, targeting for a low material budget, a new mechanical support using lightweight staves and a CO2 based cooling system have been adopted. An overview of the refurbishing of the Pixel Detector and of the IBL project as ...

  6. The upgraded Pixel Detector of the ATLAS Experiment for Run2 at the Large Hadron Collider

    CERN Document Server

    Backhaus, Malte; The ATLAS collaboration

    2015-01-01

    Run-2 of the LHC will provide new challenges to track and vertex reconstruction with higher energies, denser jets and higher rates. Therefore the ATLAS experiment has constructed the first 4-layer Pixel detector in HEP, installing a new Pixel layer, also called Insertable B-Layer (IBL). IBL is a fourth layer of pixel detectors, and has been installed in May 2014 at a radius of 3.3 cm between the existing Pixel Detector and a new smaller radius beam-pipe. To cope with the high radiation and pixel occupancy due to the proximity to the interaction point, two different silicon sensor technologies (planar and 3D) have been developed as well as a new read-out chip within CMOS 130nm technology and with larger area, smaller pixel size and faster readout capability. The new detector is the first large scale application of of 3D detectors and CMOS 130nm technology. An overview of the lessons learned during the IBL project will be presented, focusing on the challenges and highlighting the issues met during the productio...

  7. The Pixel Detector of the ATLAS experiment for the Run2 at the Large Hadron Collider

    CERN Document Server

    Takubo, Y; The ATLAS collaboration

    2014-01-01

    The Pixel Detector of the ATLAS experiment has shown excellent performance during the whole Run-1 of LHC. Taking advantage of the long shutdown, the detector was extracted from the experiment and brought to surface, to equip it with new service quarter panels, to repair the modules and to ease installation of the Insertable B-Layer (IBL). The IBL is a fourth layer of pixel detectors, and has been installed in May 2014 between the existing Pixel Detector and a new smaller radius beam-pipe at a radius of 3.3 cm. To cope with the high radiation and pixel occupancy due to the proximity to the interaction point, a new read-out chip and two different silicon sensor technologies (planar and 3D) have been developed. Furthermore, the physics performance will be improved through the reduction of pixel size while, targeting for a low material budget, a new mechanical support using light weight staves and CO$_{2}$ based cooling system have been adopted. An overview of the refurbishing of the Pixel Detector and the IBL pr...

  8. Commissioning of the upgraded ATLAS Pixel Detector for Run2 at LHC

    CERN Document Server

    ATLAS Pixel Collaboration; The ATLAS collaboration

    2015-01-01

    The Pixel Detector of the ATLAS experiment has shown excellent performance during the whole Run-1 of LHC. Taking advantage of the long showdown, the detector was extracted from the experiment and brought to surface, to equip it with new service quarter panels, to repair modules and to ease installation of the Insertable B-Layer (IBL). IBL is a fourth layer of pixel detectors, and has been installed in May 2014 between the existing Pixel Detector and a new smaller radius beam-pipe at a radius of 3.3 cm. To cope with the high radiation and pixel occupancy due to the proximity to the interaction point, a new read-out chip and two different silicon sensor technologies (planar and 3D) have been developed. Furthermore, the physics performance will be improved through the reduction of pixel size while, targeting for a low material budget, a new mechanical support using lightweight staves and a CO2 based cooling system have been adopted. An overview of the refurbishing of the Pixel Detector and of the IBL project as ...

  9. Development of a Micro Pixel Chamber for the ATLAS Upgrade

    CERN Document Server

    Ochi, Atsuhiko; Komai, Hidetoshi; Edo, Yuki; Yamaguchi, Takahiro

    2012-01-01

    The Micro Pixel Chamber (μ-PIC) is being developed a sacandidate for the muon system of the ATLAS detector for upgrading in LHC experiments. The μ-PIC is a micro-pattern gaseous detector that doesn’t have floating structure such as wires, mesh, or foil. This detector can be made by printed-circuit-board (PCB) technology, which is commercially available and suited for mass production. Operation tests have been performed under high flux neutrons under similar conditions to the ATLAS cavern. Spark rates are measured using several gas mixtures under 7 MeV neutron irradiation, and good properties were observed using neon, ethane, and CF4 mixture of gases.Using resistive materials as electrodes, we are also developing a new μ-PIC, which is not expected to damage the electrodes in the case of discharge sparks.

  10. Radiation Tolerance of CMOS Monolithic Active Pixel Sensors with Self-Biased Pixels

    CERN Document Server

    Deveaux, M; Besson, A; Claus, G; Colledani, C; Dorokhov, M; Dritsa, C; Dulinski, W; Fröhlich, I; Goffe, M; Grandjean, D; Heini, S; Himmi, A; Hu, C; Jaaskelainen, K; Müntz, C; Shabetai, A; Stroth, J; Szelezniak, M; Valin, I; Winter, M

    2009-01-01

    CMOS Monolithic Active Pixel Sensors (MAPS) are proposed as a technology for various vertex detectors in nuclear and particle physics. We discuss the mechanisms of ionizing radiation damage on MAPS hosting the the dead time free, so-called self bias pixel. Moreover, we discuss radiation hardened sensor designs which allow operating detectors after exposing them to irradiation doses above 1 Mrad

  11. Robustness of the ATLAS pixel clustering neural network algorithm

    CERN Document Server

    Sidebo, Per Edvin; The ATLAS collaboration

    2016-01-01

    Proton-proton collisions at the energy frontier puts strong constraints on track reconstruction algorithms. The algorithms depend heavily on accurate estimation of the position of particles as they traverse the inner detector elements. An artificial neural network algorithm is utilised to identify and split clusters of neighbouring read-out elements in the ATLAS pixel detector created by multiple charged particles. The method recovers otherwise lost tracks in dense environments where particles are separated by distances comparable to the size of the detector read-out elements. Such environments are highly relevant for LHC run 2, e.g. in searches for heavy resonances. Within the scope of run 2 track reconstruction performance and upgrades, the robustness of the neural network algorithm will be presented. The robustness has been studied by evaluating the stability of the algorithm’s performance under a range of variations in the pixel detector conditions.

  12. Test su fascio di prototipi del rivelatore a pixel per l'esperimento ATLAS

    CERN Document Server

    Matera, Andrea; Andreazza, A

    2005-01-01

    Silicon pixel detectors, developed to meet LHC requirements, were tested within the ATLAS collaboration in the H8 beam at CERN. Different sensor designs were studied using various versions of front end electronics developed during the R&D process. In this thesis a detailed experimental study of the overall performance of both irradiated and unirradiated detectors is presented, with special enphasis on efficiency, charge collection and spatial resolution. For the first time their dependence on timewalk is carefully investigated. Possible solutions to avoid spatial resolution deterioration due to timewalk are presented and discussed.

  13. Heavily Irradiated N-in-p Thin Planar Pixel Sensors with and without Active Edges

    CERN Document Server

    Terzo, S; Macchiolo, A; Moser, H G; Nisius, R; Richter, R H; Weigell, P

    2014-01-01

    We present the results of the characterization of silicon pixel modules employing n-in-p planar sensors with an active thickness of 150 $\\mathrm{\\mu}$m, produced at MPP/HLL, and 100-200 $\\mathrm{\\mu}$m thin active edge sensor devices, produced at VTT in Finland. These thin sensors are designed as candidates for the ATLAS pixel detector upgrade to be operated at the HL-LHC, as they ensure radiation hardness at high fluences. They are interconnected to the ATLAS FE-I3 and FE-I4 read-out chips. Moreover, the n-in-p technology only requires a single side processing and thereby it is a cost-effective alternative to the n-in-n pixel technology presently employed in the LHC experiments. High precision beam test measurements of the hit efficiency have been performed on these devices both at the CERN SpS and at DESY, Hamburg. We studied the behavior of these sensors at different bias voltages and different beam incident angles up to the maximum one expected for the new Insertable B-Layer of ATLAS and for HL-LHC detect...

  14. Characterization of active CMOS sensors for capacitively coupled pixel detectors

    Energy Technology Data Exchange (ETDEWEB)

    Hirono, Toko; Gonella, Laura; Janssen, Jens; Hemperek, Tomasz; Huegging, Fabian; Krueger, Hans; Wermes, Norbert [Institute of Physics, University of Bonn (Germany); Peric, Ivan [Institut fuer Prozessdatenverarbeitung und Elektronik, Karlsruher Institut fuer Technologie, Karlsruhe (Germany)

    2015-07-01

    Active CMOS pixel sensor is one of the most attractive candidates for detectors of upcoming particle physics experiments. In contrast to conventional sensors of hybrid detectors, signal processing circuit can be integrated in the active CMOS sensor. The characterization and optimization of the pixel circuit are indispensable to obtain a good performance from the sensors. The prototype chips of the active CMOS sensor were fabricated in the AMS 180nm and L-Foundry 150 nm CMOS processes, respectively a high voltage and high resistivity technology. Both chips have a charge sensitive amplifier and a comparator in each pixel. The chips are designed to be glued to the FEI4 pixel readout chip. The signals from 3 pixels of the prototype chips are capacitively coupled to the FEI4 input pads. We have performed lab tests and test beams to characterize the prototypes. In this presentation, the measurement results of the active CMOS prototype sensors are shown.

  15. Active pixel sensors with substantially planarized color filtering elements

    Science.gov (United States)

    Fossum, Eric R. (Inventor); Kemeny, Sabrina E. (Inventor)

    1999-01-01

    A semiconductor imaging system preferably having an active pixel sensor array compatible with a CMOS fabrication process. Color-filtering elements such as polymer filters and wavelength-converting phosphors can be integrated with the image sensor.

  16. Development of active edge pixel sensors and four-side buttable modules using vertical integration technologies

    CERN Document Server

    Macchiolo, A; Moser, H-G; Nisius, R; Richter, R H; Terzo, S; Weigell, P

    2014-01-01

    We present an R&D activity focused on the development of novel modules for the upgrade of the ATLAS pixel system at the High Luminosity LHC (HL-LHC). The modules consist of n-in-p pixel sensors, 100 or 200 $\\mu$m thick, produced at VTT (Finland) with an active edge technology, which considerably reduces the dead area at the periphery of the device. The sensors are interconnected with solder bump-bonding to the ATLAS FE-I3 and FE-I4 read-out chips, and characterized with radioactive sources and beam tests at the CERN-SPS and DESY. The results of these measurements will be discussed for devices before and after irradiation up to a fluence of $5\\times 10^{15}$ \

  17. SOI Pixel Sensor for Gamma-Ray Imaging

    CERN Document Server

    Shimazoe, Kenji; Yoshihara, Yuri; Koyama, Akihiko; Takahashi, Hiroyuki; Orita, Tadashi; Kamada, Kei; Takeda, Ayaki; Tsuru, Takeshi; Arai, Yasuo

    2015-01-01

    SOI (Silicon-On-Insulator) pixel sensor is promising technology for developing the high position resolution detector by integrating the small pixels and circuits in the monolithic way. The event driven (trigger mode) SOI based pixel sensor has also been developed for the application of X-ray astronomy with the purpose of reducing the noise using anti-coincidence event. This trigger mode SOI pixel sensor working with in the rate of kilo Hz is also a promising scatter detector for advanced Compton imaging to track the Compton recoiled electrons.

  18. CMOS monolithic pixel sensors research and development at LBNL

    Indian Academy of Sciences (India)

    D Contarato; J-M Bussat; P Denes; L Griender; T Kim; T Stezeberger; H Weiman; M Battaglia; B Hooberman; L Tompkins

    2007-12-01

    This paper summarizes the recent progress in the design and characterization of CMOS pixel sensors at LBNL. Results of lab tests, beam tests and radiation hardness tests carried out at LBNL on a test structure with pixels of various sizes are reported. The first results of the characterization of back-thinned CMOS pixel sensors are also reported, and future plans and activities are discussed.

  19. CMOS Active Pixel Sensor Star Tracker with Regional Electronic Shutter

    Science.gov (United States)

    Yadid-Pecht, Orly; Pain, Bedabrata; Staller, Craig; Clark, Christopher; Fossum, Eric

    1996-01-01

    The guidance system in a spacecraft determines spacecraft attitude by matching an observed star field to a star catalog....An APS(active pixel sensor)-based system can reduce mass and power consumption and radiation effects compared to a CCD(charge-coupled device)-based system...This paper reports an APS (active pixel sensor) with locally variable times, achieved through individual pixel reset (IPR).

  20. Spectroscopic measurements with the ATLAS FE-I4 pixel readout chip

    Energy Technology Data Exchange (ETDEWEB)

    Pohl, David-Leon; Janssen, Jens; Hemperek, Tomasz; Huegging, Fabian; Wermes, Norbert [Physikalisches Institut der Univeristaet Bonn (Germany)

    2015-07-01

    The ATLAS FE-I4 pixel readout chip is a large (2 x 2 cm{sup 2}) state of the art ASIC used in high energy physics experiments as well as for research and development purposes. While the FE-I4 is optimized for high hit rates it provides very limited charge resolution. Therefore two methods were developed to obtain high resolution single pixel charge spectra with the ATLAS FE-I4. The first method relies on the ability to change the detection threshold in small steps while counting hits from a particle source and has a resolution limited by electronic noise only. The other method uses a FPGA based time-to-digital-converter to digitize the analog charge signal with high precision. The feasibility, performance and challenges of these methods are discussed. First results of sensor characterizations from radioactive sources and test beams with the ATLAS FE-I4 in view of the charge collection efficiency after irradiation are presented.

  1. The Pixel Detector of the ATLAS experiment for the Run2 at the Large Hadron Collider

    CERN Document Server

    Mandelli, B; The ATLAS collaboration

    2014-01-01

    The Pixel Detector of the ATLAS experiment has shown excellent performance during the whole Run-1 of LHC. Taking advantage of the long shutdown, the detector was extracted from the experiment and brought to surface, to equip it with new service quarter panels, to repair modules and to ease installation of the Insertable B-Layer (IBL). IBL is a fourth layer of pixel detectors, and will be installed in May 2014 between the existing Pixel Detector and a new smaller radius beam-pipe at a radius of 3.3 cm. To cope with the high radiation and pixel occupancy due to the proximity to the interaction point, a new read-out chip and two different silicon sensor technologies (planar and 3D) have been developed. Furthermore, the physics performance will be improved through the reduction of pixel size while, targeting for a low material budget, a new mechanical support using lightweight staves and a CO2 based cooling system have been adopted. IBL construction is now completed. An overview of the IBL project as well as the ...

  2. The Pixel Detector of the ATLAS experiment for the Run2 at the Large Hadron Collider

    CERN Document Server

    Oide, H; The ATLAS collaboration

    2014-01-01

    The Pixel Detector of the ATLAS experiment has shown excellent performance during the whole Run-1 of LHC. Taking advantage of the long showdown, the detector was extracted from the experiment and brought to surface, to equip it with new service quarter panels, to repair modules and to ease installation of the Insertable B-Layer (IBL). IBL is a fourth layer of pixel detectors, and will be installed in May 2014 between the existing Pixel Detector and a new smaller radius beam-pipe at a radius of 3.3 cm. To cope with the high radiation and pixel occupancy due to the proximity to the interaction point, a new read-out chip and two different silicon sensor technologies (planar and 3D) have been developed. Furthermore, the physics performance will be improved through the reduction of pixel size while, targeting for a low material budget, a new mechanical support using lightweight staves and a CO2 based cooling system have been adopted. IBL construction is now completed. An overview of the IBL project as well as the ...

  3. The Pixel Detector of the ATLAS experiment for the Run 2 at the Large Hadron Collider

    CERN Document Server

    Oide, H; The ATLAS collaboration

    2014-01-01

    The Pixel Detector of the ATLAS experiment has shown excellent performance during the whole Run 1 of LHC. Taking advantage of the long shutdown, the detector was extracted from the experiment and brought to surface, to equip it with new service quarter panels, to repair modules and to ease installation of the Insertable B-Layer (IBL). The IBL is the fourth layer of the Run 2 Pixel Detector, and it was installed in May 2014 between the existing Pixel Detector and the new smaller-radius beam pipe at a radius of 3.3 cm. To cope with the high radiation and pixel occupancy due to the proximity to the interaction point, a new read-out chip and two different silicon sensor technologies (planar and 3D) have been developed. Furthermore, the physics performance will be improved through the reduction of pixel size while, targeting for a low material budget, a new mechanical support using lightweight staves and a CO2 based cooling system have been adopted. IBL construction is now completed. An overview of the IBL project...

  4. The Pixel Detector of the ATLAS Experiment for LHC Run-2

    CERN Document Server

    Pernegger, Heinz; The ATLAS collaboration

    2015-01-01

    The Pixel Detector of the ATLAS experiment has shown excellent performance during the whole Run-1 of LHC. Taking advantage of the long shutdown, the detector was extracted from the experiment and brought to surface, to equip it with new service quarter panels, to repair modules and to ease installation of the Insertable B-Layer (IBL). IBL is a fourth layer of pixel detectors, and has been installed in May 2014 between the existing Pixel Detector and a new smaller radius beam-pipe at a radius of 3.3 cm. To cope with the high radiation and hit occupancy due to the proximity to the interaction point, a new read-out chip and two different silicon sensor technologies (planar and 3D) have been developed. Furthermore, the physics performance will be improved through the reduction of pixel size while, targeting for a low material budget, a new mechanical support using lightweight staves and a CO2 based cooling system have been adopted. An overview of the refurbishing of the Pixel Detector and of the IBL project as we...

  5. The upgraded Pixel Detector of the ATLAS Experiment for Run2 at the Large Hadron Collider

    CERN Document Server

    Mullier, Geoffrey Andre; The ATLAS collaboration

    2015-01-01

    The Pixel Detector of the ATLAS experiment has shown excellent performance during the whole Run-1 of LHC. Taking advantage of the long showdown, the detector was extracted from the experiment and brought to surface, to equip it with new service quarter panels, to repair modules and to ease installation of the Insertable B-Layer (IBL), a fourth layer of pixel detectors, installed in May 2014 between the existing Pixel Detector and a new smaller radius beam-pipe at a radius of 3.3 cm. To cope with the high radiation and increased pixel occupancy due to the proximity to the interaction point, two different silicon sensor technologies (planar and 3D) have been developed. A new readout chip has been developed within CMOS 130nm technology with larger area, smaller pixel size and faster readout capability. Dedicated design features in combination with a new composite material were considered and used in order to reduce the material budget of the support structure while keeping the optimal thermo-mechanical performan...

  6. Development of active edge pixel sensors and four-side buttable modules using vertical integration technologies

    Science.gov (United States)

    Macchiolo, A.; Andricek, L.; Moser, H.-G.; Nisius, R.; Richter, R. H.; Terzo, S.; Weigell, P.

    2014-11-01

    We present an R&D activity focused on the development of novel modules for the upgrade of the ATLAS pixel system at the High Luminosity LHC (HL-LHC). The modules consist of n-in-p pixel sensors, 100 or 200 μm thick, produced at VTT (Finland) with an active edge technology, which considerably reduces the dead area at the periphery of the device. The sensors are interconnected with solder bump-bonding to the ATLAS FE-I3 and FE-I4 read-out chips, and characterised with radioactive sources and beam tests at the CERN-SPS and DESY. The results of these measurements will be discussed for devices before and after irradiation up to a fluence of 5 ×1015neq /cm2. We will also report on the R&D activity to obtain Inter Chip Vias (ICVs) on the ATLAS read-out chip in collaboration with the Fraunhofer Institute EMFT. This step is meant to prove the feasibility of the signal transport to the newly created readout pads on the backside of the chips allowing for four side buttable devices without the presently used cantilever for wire bonding. The read-out chips with ICVs will be interconnected to thin pixel sensors, 75 μm and 150 μm thick, with the Solid Liquid Interdiffusion (SLID) technology, which is an alternative to the standard solder bump-bonding.

  7. Development of active edge pixel sensors and four-side buttable modules using vertical integration technologies

    Energy Technology Data Exchange (ETDEWEB)

    Macchiolo, A., E-mail: Anna.Macchiolo@mpp.mpg.de [Max-Planck-Institut for Physics, Föhringer Ring 6, D-80805 Munich (Germany); Andricek, L. [Semiconductor Laboratory of the Max-Planck-Society, Otto Hahn Ring 6, D-81739 Munich (Germany); Moser, H.-G.; Nisius, R. [Max-Planck-Institut for Physics, Föhringer Ring 6, D-80805 Munich (Germany); Richter, R.H. [Semiconductor Laboratory of the Max-Planck-Society, Otto Hahn Ring 6, D-81739 Munich (Germany); Terzo, S.; Weigell, P. [Max-Planck-Institut for Physics, Föhringer Ring 6, D-80805 Munich (Germany)

    2014-11-21

    We present an R and D activity focused on the development of novel modules for the upgrade of the ATLAS pixel system at the High Luminosity LHC (HL-LHC). The modules consist of n-in-p pixel sensors, 100 or 200 μm thick, produced at VTT (Finland) with an active edge technology, which considerably reduces the dead area at the periphery of the device. The sensors are interconnected with solder bump-bonding to the ATLAS FE-I3 and FE-I4 read-out chips, and characterised with radioactive sources and beam tests at the CERN-SPS and DESY. The results of these measurements will be discussed for devices before and after irradiation up to a fluence of 5×10{sub 15}n{sub eq}/cm{sup 2}. We will also report on the R and D activity to obtain Inter Chip Vias (ICVs) on the ATLAS read-out chip in collaboration with the Fraunhofer Institute EMFT. This step is meant to prove the feasibility of the signal transport to the newly created readout pads on the backside of the chips allowing for four side buttable devices without the presently used cantilever for wire bonding. The read-out chips with ICVs will be interconnected to thin pixel sensors, 75 μm and 150 μm thick, with the Solid Liquid Interdiffusion (SLID) technology, which is an alternative to the standard solder bump-bonding.

  8. Development of active edge pixel sensors and four-side buttable modules using vertical integration technologies

    International Nuclear Information System (INIS)

    We present an R and D activity focused on the development of novel modules for the upgrade of the ATLAS pixel system at the High Luminosity LHC (HL-LHC). The modules consist of n-in-p pixel sensors, 100 or 200 μm thick, produced at VTT (Finland) with an active edge technology, which considerably reduces the dead area at the periphery of the device. The sensors are interconnected with solder bump-bonding to the ATLAS FE-I3 and FE-I4 read-out chips, and characterised with radioactive sources and beam tests at the CERN-SPS and DESY. The results of these measurements will be discussed for devices before and after irradiation up to a fluence of 5×1015neq/cm2. We will also report on the R and D activity to obtain Inter Chip Vias (ICVs) on the ATLAS read-out chip in collaboration with the Fraunhofer Institute EMFT. This step is meant to prove the feasibility of the signal transport to the newly created readout pads on the backside of the chips allowing for four side buttable devices without the presently used cantilever for wire bonding. The read-out chips with ICVs will be interconnected to thin pixel sensors, 75 μm and 150 μm thick, with the Solid Liquid Interdiffusion (SLID) technology, which is an alternative to the standard solder bump-bonding

  9. Mapping Electrical Crosstalk in Pixelated Sensor Arrays

    Science.gov (United States)

    Seshadri, Suresh (Inventor); Cole, David (Inventor); Smith, Roger M (Inventor); Hancock, Bruce R. (Inventor)

    2013-01-01

    The effects of inter pixel capacitance in a pixilated array may be measured by first resetting all pixels in the array to a first voltage, where a first image is read out, followed by resetting only a subset of pixels in the array to a second voltage, where a second image is read out, where the difference in the first and second images provide information about the inter pixel capacitance. Other embodiments are described and claimed.

  10. High bandwidth pixel detector modules for the ATLAS Insertable B-Layer

    International Nuclear Information System (INIS)

    The investigation of the nature of the recently discovered electro-weak symmetry breaking mechanism of the standard model of particle physics as well as the search for physics beyond the standard model with the LHC require to collect even more data. To achieve this goal, the luminosity of the LHC will be increased in two steps. The increased luminosity results in serious challenges for the inner tracking systems of the experiments at the LHC. The ATLAS pixel detector will also be upgraded in a two stage program. During the shutdown in 2013 and 2014 a fourth hybrid pixel detector layer, the socalled Insertable B-Layer (IBL) is inserted inside the existing pixel detector. This thesis focuses on the characterization, performance measurement, and production quality assurance of the central sensitive elements of the IBL, the modules. This includes a full characterization of the readout chip (FE-I4) and of the assembled modules. A completely new inner tracking system is mandatory in ATLAS after the second luminosity increase in the shutdown of 2022 and 2023. The final chapter of this thesis introduces a new module concept that uses an industrial high voltage CMOS technology as sensor layer, which is capacitively coupled to the FE-I4 readout chip.

  11. High bandwidth pixel detector modules for the ATLAS Insertable B-Layer

    Energy Technology Data Exchange (ETDEWEB)

    Backhaus, Malte

    2014-01-15

    The investigation of the nature of the recently discovered electro-weak symmetry breaking mechanism of the standard model of particle physics as well as the search for physics beyond the standard model with the LHC require to collect even more data. To achieve this goal, the luminosity of the LHC will be increased in two steps. The increased luminosity results in serious challenges for the inner tracking systems of the experiments at the LHC. The ATLAS pixel detector will also be upgraded in a two stage program. During the shutdown in 2013 and 2014 a fourth hybrid pixel detector layer, the socalled Insertable B-Layer (IBL) is inserted inside the existing pixel detector. This thesis focuses on the characterization, performance measurement, and production quality assurance of the central sensitive elements of the IBL, the modules. This includes a full characterization of the readout chip (FE-I4) and of the assembled modules. A completely new inner tracking system is mandatory in ATLAS after the second luminosity increase in the shutdown of 2022 and 2023. The final chapter of this thesis introduces a new module concept that uses an industrial high voltage CMOS technology as sensor layer, which is capacitively coupled to the FE-I4 readout chip.

  12. Active-Pixel Image Sensors With Programmable Resolution

    Science.gov (United States)

    Kemeny, Sabrina E.; Fossum, Eric R.; Pain, Bedabrata; Nakamura, Junichi; Matthies, Larry H.

    1996-01-01

    Active-pixel image sensors with programmable resolution proposed for use in applications in which speed and efficiency of processing of image data enhanced by providing those data at varying resolutions. Such applications include modeling of biological vision, stereoscopic range-finding, recognition of patterns, tracking targets, and progressive transmission of compressed images. In target-tracking application, sensor initially forms low-resolution image from which area of interest identified, then sensor set at high resolution for examination of identified area. Outputs of contiguous pixels combined. Sensor of this type made to act as though it comprised fewer and larger pixels.

  13. 3D silicon pixel detectors for the ATLAS Forward Physics experiment

    International Nuclear Information System (INIS)

    The ATLAS Forward Physics (AFP) project plans to install 3D silicon pixel detectors about 210 m away from the interaction point and very close to the beamline (2–3 mm). This implies the need of slim edges of about 100–200 μm width for the sensor side facing the beam to minimise the dead area. Another challenge is an expected non-uniform irradiation of the pixel sensors. It is studied if these requirements can be met using slightly-modified FE-I4 3D pixel sensors from the ATLAS Insertable B-Layer production. AFP-compatible slim edges are obtained with a simple diamond-saw cut. Electrical characterisations and beam tests are carried out and no detrimental impact on the leakage current and hit efficiency is observed. For devices without a 3D guard ring a remaining insensitive edge of less than 15 μm width is found. Moreover, 3D detectors are non-uniformly irradiated up to fluences of several 1015 neq/cm2 with either a focussed 23 GeV proton beam or a 23 MeV proton beam through holes in Al masks. The efficiency in the irradiated region is found to be similar to the one in the non-irradiated region and exceeds 97% in case of favourable chip-parameter settings. Only in a narrow transition area at the edge of the hole in the Al mask, a significantly lower efficiency is seen. A follow-up study of this effect using arrays of small pad diodes for position-resolved dosimetry via the leakage current is carried out

  14. Optimization of radiation hardness and charge collection of edgeless silicon pixel sensors for photon science

    CERN Document Server

    Zhang, Jiaguo; Pennicard, David; Sarajlic, Milija; Graafsma, Heinz

    2014-01-01

    Recent progress in active-edge technology of silicon sensors enables the development of large-area tiled silicon pixel detectors with small dead space between modules by utilizing edgeless sensors. Such technology has been proven in successful productions of ATLAS and Medipix-based silicon pixel sensors by a few foundries. However, the drawbacks of edgeless sensors are poor radiation hardness for ionizing radiation and non-uniform charge collection by edge pixels. In this work, the radiation hardness of edgeless sensors with different polarities has been investigated using Synopsys TCAD with X-ray radiation-damage parameters implemented. Results show that if no conventional guard ring is present, none of the current designs are able to achieve a high breakdown voltage (typically < 30 V) after irradiation to a dose of ~10 MGy. In addition, a charge-collection model has been developed and was used to calculate the charges collected by the edge pixels of edgeless sensors when illuminated with X-rays. The mode...

  15. Optimization of radiation hardness and charge collection of edgeless silicon pixel sensors for photon science

    International Nuclear Information System (INIS)

    Recent progress in active-edge technology of silicon sensors enables the development of large-area tiled silicon pixel detectors with small dead space between modules by utilizing edgeless sensors. Such technology has been proven in successful productions of ATLAS and Medipix-based silicon pixel sensors by a few foundries. However, the drawbacks of edgeless sensors are poor radiation hardness for ionizing radiation and non-uniform charge collection by edge pixels. In this work, the radiation hardness of edgeless sensors with different polarities has been investigated using Synopsys TCAD with X-ray radiation-damage parameters implemented. Results show that if no conventional guard ring is present, none of the current designs are able to achieve a high breakdown voltage (typically < 30 V) after irradiation to a dose of ∼ 10 MGy. In addition, a charge-collection model has been developed and was used to calculate the charges collected by the edge pixels of edgeless sensors when illuminated with X-rays. The model takes into account the electric field distribution inside the pixel sensor, the absorption of X-rays, drift and diffusion of electrons and holes, charge sharing effects, and threshold settings in ASICs. It is found that the non-uniform charge collection of edge pixels is caused by the strong bending of the electric field and the non-uniformity depends on bias voltage, sensor thickness and distance from active edge to the last pixel (''edge space). In particular, the last few pixels close to the active edge of the sensor are not sensitive to low-energy X-rays ( < 10 keV), especially for sensors with thicker Si and smaller edge space. The results from the model calculation have been compared to measurements and good agreement was obtained. The model can be used to optimize the edge design. From the edge optimization, it is found that in order to guarantee the sensitivity of the last few pixels to low-energy X-rays, the edge space should be kept at

  16. ATLAS pixel detector timing optimisation with the back of crate card of the optical pixel readout system

    Energy Technology Data Exchange (ETDEWEB)

    Flick, T; Gerlach, P; Reeves, K; Maettig, P [Department of Physics, Bergische Universitaet Wuppertal (Germany)

    2007-04-15

    As with all detector systems at the Large Hadron Collider (LHC), the assignment of data to the correct bunch crossing, where bunch crossings will be separated in time by 25 ns, is one of the challenges for the ATLAS pixel detector. This document explains how the detector system will accomplish this by describing the general strategy, its implementation, the optimisation of the parameters, and the results obtained during a combined testbeam of all ATLAS subdetectors.

  17. Characterization of a Depleted Monolithic Active Pixel Sensor (DMAPS) prototype

    International Nuclear Information System (INIS)

    New monolithic pixel detectors integrating CMOS electronics and sensor on the same silicon substrate are currently explored for particle tracking in future HEP experiments, most notably at the LHC . The innovative concept of Depleted Monolithic Active Pixel Sensors (DMAPS) is based on high resistive silicon bulk material enabling full substrate depletion and the application of an electrical drift field for fast charge collection, while retaining full CMOS capability for the electronics. The technology (150 nm) used offers quadruple wells and allows to implement the pixel electronics with independently isolated N- and PMOS transistors. Results of initial studies on the charge collection and sensor performance are presented

  18. Characterization of a Depleted Monolithic Active Pixel Sensor (DMAPS) prototype

    Science.gov (United States)

    Obermann, T.; Havranek, M.; Hemperek, T.; Hügging, F.; Kishishita, T.; Krüger, H.; Marinas, C.; Wermes, N.

    2015-03-01

    New monolithic pixel detectors integrating CMOS electronics and sensor on the same silicon substrate are currently explored for particle tracking in future HEP experiments, most notably at the LHC . The innovative concept of Depleted Monolithic Active Pixel Sensors (DMAPS) is based on high resistive silicon bulk material enabling full substrate depletion and the application of an electrical drift field for fast charge collection, while retaining full CMOS capability for the electronics. The technology (150 nm) used offers quadruple wells and allows to implement the pixel electronics with independently isolated N- and PMOS transistors. Results of initial studies on the charge collection and sensor performance are presented.

  19. ATLAS SemiConductor Tracker and Pixel Detector: Status and Performance

    CERN Document Server

    Reeves, K; The ATLAS collaboration

    2012-01-01

    The Semi-Conductor Tracker (SCT) and the Pixel Detector are the key precision tracking devices in the Inner Detector of the ATLAS experiment at CERN LHC. The SCT is a silicon strip detector and is constructed of 4088 silicon detector modules for a total of 6.3 million strips. Each module is designed, constructed and tested to operate as a stand-alone unit, mechanically, electrically, optically and thermally. The SCT silicon micro-strip sensors are processed in the planar p-in-n technology. The signals from the strips are processed in the front-end ASICS ABCD3TA, working in the binary readout mode. The Pixel Detector consists of approximately 80 million pixels that are individually read out via chips bump-bonded to 1744 n-in-n silicon substrates. In the talk the current status of the SCT and Pixel Detector will be reviewed. We will report on the operation of the detectors including an overview of the issues we encountered and the observation of significant increases in leakage currents (as expected) from bulk ...

  20. The Pixel Detector of the ATLAS Experiment for the Run-2 at the Large Hadron Collider

    CERN Document Server

    Guescini, F; The ATLAS collaboration

    2014-01-01

    The Pixel Detector of the ATLAS experiment has shown excellent performance during the whole Run-1 of LHC. Taking advantage of the long showdown, the detector was extracted from the experiment and brought to surface, to equip it with new service quarter panels, to repair modules and to ease installation of the Insertable B-Layer (IBL). IBL is a fourth layer of pixel detectors, and has been installed in May 2014 between the existing Pixel Detector and a new smaller radius beam-pipe at a radial distance of 3.3 cm from the beam axis. The realization of the IBL required the development of several new technologies and solutions in order to overcome the challenges introduced by the extreme environment and working conditions, such as the high radiation levels, the high pixel occupancy and the need of an exceptionally low material budget. Two silicon sensor technologies have been adopted for the IBL modules: planar n-in-n and 3D. Both of these are connected via bump bonding to the new generation 130 nm IBM CMOS FE-I4 ...

  1. Development of radiation hardened pixel sensors for charged particle detection

    CERN Document Server

    Koziel, Michal

    2014-01-01

    CMOS Pixel Sensors are being developed since a few years to equip vertex detectors for future high-energy physics experiments with the crucial advantages of a low material budget and low production costs. The features simultaneously required are a short readout time, high granularity and high tolerance to radiation. This thesis mainly focuses on the radiation tolerance studies. To achieve the targeted readout time (tens of microseconds), the sensor pixel readout was organized in parallel columns restricting in addition the readout to pixels that had collected the signal charge. The pixels became then more complex, and consequently more sensitive to radiation. Different in-pixel architectures were studied and it was concluded that the tolerance to ionizing radiation was limited to 300 krad with the 0.35- m fabrication process currently used, while the targeted value was several Mrad. Improving this situation calls for implementation of the sensors in processes with a smaller feature size which naturally imp...

  2. Mapping Capacitive Coupling Among Pixels in a Sensor Array

    Science.gov (United States)

    Seshadri, Suresh; Cole, David M.; Smith, Roger M.

    2010-01-01

    An improved method of mapping the capacitive contribution to cross-talk among pixels in an imaging array of sensors (typically, an imaging photodetector array) has been devised for use in calibrating and/or characterizing such an array. The method involves a sequence of resets of subarrays of pixels to specified voltages and measurement of the voltage responses of neighboring non-reset pixels.

  3. ATLAS Pixel-Optoboard Production and Simulation Studies

    CERN Document Server

    Nderitu, Simon

    At CERN, a Large collider will collide protons at high energies. There are four experiments being built to study the particle properties from the collision. The ATLAS experiment is the largest. It has many sub detectors among which is the Pixel detector which is the innermost part. The Pixel detector has eighty million channels that have to be read out. An optical link is utilized for the read out. It has optical to electronic interfaces both on the detector and off the detector at the counting room. The component on the detector in called the opto-board. This work discusses the production testing of the opto-boards to be installed on the detector. A total of 300 opto-boards including spares have been produced. The production was done in three laboratories among which is the laboratory at the University of Wuppertal which had the responsibility of Post production testing of all the one third of the total opto-boards. The results are discussed in this work. The analysis of the results from the total productio...

  4. 3D-FBK pixel sensors with CMS readout: First test results

    Energy Technology Data Exchange (ETDEWEB)

    Obertino, M., E-mail: margherita.obertino@cern.ch [Università del Piemonte Orientale, Novara, and INFN, Torino (Italy); Solano, A. [Università di Torino and INFN, Torino (Italy); Vilela Pereira, A. [INFN, Torino (Italy); Alagoz, E. [Physics Department, Purdue University, West Lafayette, IN (United States); Andresen, J. [Colorado University, Colorado (United States); Arndt, K.; Bolla, G.; Bortoletto, D. [Physics Department, Purdue University, West Lafayette, IN (United States); Boscardin, M. [Centro per i Materiali e i Microsistemi Fondazione Bruno Kessler (FBK), Povo di Trento (Italy); Brosius, R. [SUNY, Buffalo (United States); Bubna, M. [Physics Department, Purdue University, West Lafayette, IN (United States); Dalla Betta, G.-F. [INFN Padova (Gruppo Collegato di Trento) and Università di Trento, Povo di Trento (Italy); Jensen, F. [Colorado University, Colorado (United States); Krzywda, A. [Physics Department, Purdue University, West Lafayette, IN (United States); Kumar, A. [SUNY, Buffalo (United States); Kwan, S. [Università di Milano Bicocca and INFN, Milano (Italy); Lei, C.M. [Colorado University, Colorado (United States); Menasce, D.; Moroni, L. [INFN Milano Bicocca, Milano (Italy); Ngadiuba, J. [Università di Milano Bicocca and INFN, Milano (Italy); and others

    2013-08-01

    Silicon 3D detectors consist of an array of columnar electrodes of both doping types which penetrate entirely in the detector bulk, perpendicularly to the surface. They are emerging as one of the most promising technologies for innermost layers of tracking devices for the foreseen upgrades of the LHC. Until recently, properties of 3D sensors have been investigated mostly with ATLAS readout electronics. 3D pixel sensors compatible with the CMS readout were first fabricated at SINTEF (Oslo, Norway), and more recently at FBK (Trento, Italy) and CNM (Barcelona, Spain). Several sensors with different electrode configurations, bump-bonded with the CMS pixel PSI46 readout chip, were characterized in laboratory and tested at Fermilab with a proton beam of 120 GeV/c. Preliminary results of the data analysis are presented.

  5. Study of Silicon Pixel Sensors for Synchrotron Radiation Detection

    CERN Document Server

    Li, Zhen-Jie; Hu, Ling-Fei; Liu, Peng; Yin, Hua-Xiang

    2015-01-01

    Hybrid pixel single-photon-counting detectors have been successfully employed and widely used in Synchrotron radiation X-ray detection. In this paper, the silicon pixel sensors for single X-ray photon detection, which operate in full-depletion mode have been studied. The pixel sensors were fabricated on 4-inch, N type, 320{\\mu}m thick, high-resistivity silicon wafers. The pixel sensors has a p+-in-n structure with varies of pixel size and gap size including guard-ring structures. Later, the pixel sensor was wire bonded to the ASIC circuits and tested for the performance of X-ray response in the synchrotron beam line (BSRF, 1W2B). From the S-curve scan, we could get the energy resolution and the linear properties between input energy and the equivalent generator amplitude. The pixel sensors we fabricated have a good energy linear and high count rate depending on the ASIC readout circuit. We get the 20% energy resolution above 10 keV photon energy via wire bonding. The energy resolution would get better if we b...

  6. Small pitch pixel sensors\\\\ for the CMS Phase II upgrade

    CERN Document Server

    Steinbrueck, Georg

    2015-01-01

    The CMS collaboration has undertaken two sensor R\\&D programs on thin n-in-p planar and 3D silicon sensor technologies. To cope with the increase in instantaneous luminosity, the pixel area has to be reduced to approximately 2500 $\\mu$m$^{2}$ to keep the occupancy at the percent level. Suggested pixel cell geometries to match this requirement are {50$\\times$50 }$\\mu$...

  7. Edge pixel response studies of edgeless silicon sensor technology for pixellated imaging detectors

    Science.gov (United States)

    Maneuski, D.; Bates, R.; Blue, A.; Buttar, C.; Doonan, K.; Eklund, L.; Gimenez, E. N.; Hynds, D.; Kachkanov, S.; Kalliopuska, J.; McMullen, T.; O'Shea, V.; Tartoni, N.; Plackett, R.; Vahanen, S.; Wraight, K.

    2015-03-01

    Silicon sensor technologies with reduced dead area at the sensor's perimeter are under development at a number of institutes. Several fabrication methods for sensors which are sensitive close to the physical edge of the device are under investigation utilising techniques such as active-edges, passivated edges and current-terminating rings. Such technologies offer the goal of a seamlessly tiled detection surface with minimum dead space between the individual modules. In order to quantify the performance of different geometries and different bulk and implant types, characterisation of several sensors fabricated using active-edge technology were performed at the B16 beam line of the Diamond Light Source. The sensors were fabricated by VTT and bump-bonded to Timepix ROICs. They were 100 and 200 μ m thick sensors, with the last pixel-to-edge distance of either 50 or 100 μ m. The sensors were fabricated as either n-on-n or n-on-p type devices. Using 15 keV monochromatic X-rays with a beam spot of 2.5 μ m, the performance at the outer edge and corners pixels of the sensors was evaluated at three bias voltages. The results indicate a significant change in the charge collection properties between the edge and 5th (up to 275 μ m) from edge pixel for the 200 μ m thick n-on-n sensor. The edge pixel performance of the 100 μ m thick n-on-p sensors is affected only for the last two pixels (up to 110 μ m) subject to biasing conditions. Imaging characteristics of all sensor types investigated are stable over time and the non-uniformities can be minimised by flat-field corrections. The results from the synchrotron tests combined with lab measurements are presented along with an explanation of the observed effects.

  8. Module concepts with ultra thin FE chips and Through Silicon Vias for the upgrades of the ATLAS pixel detector

    International Nuclear Information System (INIS)

    The development of trackers for High Energy Physics experiments at high luminosity poses strict requirements on the material budget to allow good vertexing and b-tagging performance. State-of-the-art silicon technologies offer a variety of processes that can be used to achieve light modules design. Together with IZM Berlin we investigated the thinning of FE (Front-End) chips down to 90 μm, and developed a dedicated flip chip process to assure a reliable mechanical and electrical connection between thin FE chips and sensor. The selected flip chip method is currently used for the production of modules for the IBL (Insertable B-Layer) project, the first ATLAS pixel detector upgrade. Results from the characterization of IBL modules with 100 and 150 μm thin FE chip are shown. For future upgrades of the ATLAS pixel detector we propose more advanced module concepts with Through Silicon Vias (TSVs). IZM offers two via last TSV processes, Straight Side Wall TSVs and Tapered Side Wall TSVs. Both processes were successfully demonstrated with ATLAS pixel readout electronics (FE-I2/3). Results from prototype modules with planar sensor and 90 μm thin FE-I2 with Tapered TSV and back side redistribution layer are shown.

  9. Design and realisation of integrated circuits for the readout of pixel sensors in high-energy physics and biomedical imaging

    International Nuclear Information System (INIS)

    Radiation tolerant pixel-readout chip for the ATLAS pixel detector has been designed, implemented in a deep-submicron CMOS technology and successfully tested. The chip contains readout-channels with complex analog and digital circuits. Chip for steering of the DEPFET active-pixel matrix has been implemented in a high-voltage CMOS technology. The chip contains channels which generate fast sequences of high-voltage signals. Detector containing this chip has been successfully tested. Pixel-readout test chip for an X-ray imaging pixel sensor has been designed, implemented in a CMOS technology and tested. Pixel-readout channels are able to simultaneously count the signals generated by passage of individual photons and to sum the total charge generated during exposure time. (orig.)

  10. Design and realisation of integrated circuits for the readout of pixel sensors in high-energy physics and biomedical imaging

    Energy Technology Data Exchange (ETDEWEB)

    Peric, I.

    2004-08-01

    Radiation tolerant pixel-readout chip for the ATLAS pixel detector has been designed, implemented in a deep-submicron CMOS technology and successfully tested. The chip contains readout-channels with complex analog and digital circuits. Chip for steering of the DEPFET active-pixel matrix has been implemented in a high-voltage CMOS technology. The chip contains channels which generate fast sequences of high-voltage signals. Detector containing this chip has been successfully tested. Pixel-readout test chip for an X-ray imaging pixel sensor has been designed, implemented in a CMOS technology and tested. Pixel-readout channels are able to simultaneously count the signals generated by passage of individual photons and to sum the total charge generated during exposure time. (orig.)

  11. Development of CMOS Pixel Sensors with digital pixel dedicated to future particle physics experiments

    Science.gov (United States)

    Zhao, W.; Wang, T.; Pham, H.; Hu-Guo, C.; Dorokhov, A.; Hu, Y.

    2014-02-01

    Two prototypes of CMOS pixel sensor with in-pixel analog to digital conversion have been developed in a 0.18 μm CIS process. The first design integrates a discriminator into each pixel within an area of 22 × 33 μm2 in order to meet the requirements of the ALICE inner tracking system (ALICE-ITS) upgrade. The second design features 3-bit charge encoding inside a 35 × 35 μm2 pixel which is motivated by the specifications of the outer layers of the ILD vertex detector (ILD-VXD). This work aims to validate the concept of in-pixel digitization which offers higher readout speed, lower power consumption and less dead zone compared with the column-level charge encoding.

  12. Charged Particle Detection using a CMOS Active Pixel Sensor

    OpenAIRE

    Matis, H. S.; Bieser, F.; Kleinfelder, S.; Rai, G.; Retiere, F.; H.G. Ritter; Singh, K.; Wurzel, S. E.; Wieman, H.; Yamamoto, E.

    2002-01-01

    Active Pixel Sensor (APS) technology has shown promise for next-generation vertex detectors. This paper discusses the design and testing of two generations of APS chips. Both are arrays of 128 by 128 pixels, each 20 by 20 micro-m. Each array is divided into sub-arrays in which different sensor structures (4 in the first version and 16 in the second) and/or readout circuits are employed. Measurements of several of these structures under Fe55 exposure are reported. The sensors have also been ir...

  13. Testbeam and Laboratory Characterization of CMS 3D Pixel Sensors

    CERN Document Server

    Bubna, M; Krzywda, A; Koybasi, O; Arndt, K; Bortoletto, D; Shipsey, I; Bolla, G; Kok, A; Hansen, T -E; Hansen, T A; Jensen, G U; Brom, J M; Boscardin, M; Chramowicz, J; Cumalat, J; Betta, G F Dalla; Dinardo, M; Godshalk, A; Jones, M; Krohn, M D; Kumar, A; Lei, C M; Moroni, L; Perera, L; Povoli, M; Prosser, A; Rivera, R; Solano, A; Obertino, M M; Kwan, S; Uplegger, L; Via, C D; Vigani, L; Wagner, S

    2014-01-01

    The pixel detector is the innermost tracking device in CMS, reconstructing interaction vertices and charged particle trajectories. The sensors located in the innermost layers of the pixel detector must be upgraded for the ten-fold increase in luminosity expected with the High- Luminosity LHC (HL-LHC) phase. As a possible replacement for planar sensors, 3D silicon technology is under consideration due to its good performance after high radiation fluence. In this paper, we report on pre- and post- irradiation measurements for CMS 3D pixel sensors with different electrode configurations. The effects of irradiation on electrical properties, charge collection efficiency, and position resolution of 3D sensors are discussed. Measurements of various test structures for monitoring the fabrication process and studying the bulk and surface properties, such as MOS capacitors, planar and gate-controlled diodes are also presented.

  14. Design and test of pixel sensors for the CMS experiment

    Science.gov (United States)

    Bolla, G.; Bortoletto, D.; Rott, C.; Roy, A.; Kwan, S.; Chien, C. Y.; Cho, H.; Gobbi, B.; Horisberger, R.; Kaufmann, R.

    2001-04-01

    The Compact Muon Solenoid (CMS) experiment at the Large Hadron Collider (LHC) will have a silicon pixel detector as its innermost tracking device. The pixel system will be exposed to the harsh radiation environment of the LHC. Prototype sensors have been designed to meet the specifications of the CMS experiment. The sensors are n +-n devices to allow partial depletion operation after bulk type inversion. The isolation of the n + pixels is provided through a novel double open p-ring design that allows sensors testing before bump bonding and flip chipping. The prototype wafers contain a variety of p-stop designs and are fabricated by two vendors on different bulk substrates including oxygenated silicon. A study of the static measurement of the prototype sensors before irradiation is presented.

  15. Design and test of pixel sensors for the CMS experiment

    CERN Document Server

    Bölla, G; Rott, C; Roy, A; Kwan, S; Chien, C Y; Cho, H; Gobbi, B; Horisberger, R P; Kaufmann, R

    2001-01-01

    The Compact Muon Solenoid (CMS) experiment at the Large Hadron Collider (LHC) will have a silicon pixel detector as its innermost tracking device. The pixel system will be exposed to the harsh radiation environment of the LHC. Prototype sensors have been designed to meet the specifications of the CMS experiment. The sensors are n/sup +/-n devices to allow partial depletion operation after bulk type inversion. The isolation of the n/sup +/ pixels is provided through a novel double open p-ring design that allows sensor testing before bump bonding and flip chipping. The prototype wafers contain a variety of p-stop designs and are fabricated by two vendors on different bulk substrates including oxygenated silicon. A study of the static measurement of the prototype sensors before irradiation is presented. (2 refs).

  16. 3D sensors for the Insertable B-Layer of the ATLAS experiment at the CERN LHC

    CERN Document Server

    Micelli, Andrea; Gemme, Claudia

    The work is centered on the 3D Silicon sensors proposed for the Pixel Detector upgrade of the ATLAS experimen at the ATLAS LHC. After an introduction about the ugrade project, the first laboratory measurement results for the characterization of the sensors performance with the read-out electronics are presented. This, together with the beam tests described in the last part, has represented an important step in the study of the sensor performance

  17. Simulation of gas mixture drift properties for GasPixel detector for modernization of ATLAS

    International Nuclear Information System (INIS)

    Results of simulation of gas mixture drift properties for GasPixel detector are presented. The properties of gaseous mixtures for the GasPixel detector have been studied in view of its use in high luminosity tracking applications for the ATLAS Inner Detector in a future super-LHC collider

  18. ATLAS Pixel Detector ROD card from IBL towards Layers 2 and 1

    Science.gov (United States)

    Balbi, G.; Falchieri, D.; Gabrielli, A.; Lama, L.; Giangiacomi, N.; Travaglini, R.

    2016-01-01

    The incoming and future upgrades of LHC will require better performance by the data acquisition system, especially in terms of throughput due to the higher luminosity that is expected. For this reason, during the first shutdown of the LHC collider in 2013/14, the ATLAS Pixel Detector has been equipped with a fourth layer— the Insertable B-Layer or IBL—located at a radius smaller than the present three layers. To read out the new layer of pixels, with a smaller pixel size with respect to the other outer layers, a front end ASIC (FE-I4) was designed as well as a new off-detector read-out chain. The latter, accordingly to the structure of the other layers of pixels, is composed mainly of two 9U-VME read-out off-detector cards called the Back-Of-Crate (BOC) and Read-Out Driver (ROD). The ROD is used for data and event formatting and for configuration and control of the overall read-out electronics. After some prototyping samples were completed, a pre-production batch of 5 ROD cards was delivered with the final layout. Another production of 15 ROD cards was done in Fall 2013, and commissioning was completed in 2014. Altogether 14 cards are necessary for the 14 staves of the IBL detector, one additional card is required by the Diamond Beam Monitor (DBM), and additional spare ROD cards were produced for a total initial batch of 20 boards. This paper describes some integration tests that were performed and our plan to install the new DAQ chain for the layer 2, which is the outermost, and layer 1, which is external to the B-layer. This latter is the only layer that will not be upgraded to a higher readout speed. Rather, it will be switched off in the near future as it has too many damaged sensors that were not possible to rework. To do that, slices of the IBL read-out chain have been instrumented, and ROD performance is verified on a test bench mimicking a small-sized final setup. Thus, this contribution reports also how the adoption of the IBL ROD for ATLAS Pixel

  19. Image Restoration After Pixel Binning in Image Sensors

    Institute of Scientific and Technical Information of China (English)

    LI Hao; ZHANG Hui; GUO Xiaolian; HU Guangshu

    2009-01-01

    A method was developed to restore degraded images to some extent after the pixel binning pro-cess in image sensors to improve the resolution. A pixel binning model was used to approximate the original un-binned image. Then, the least squares error criterion was used as a constraint to reconstruct the re-stored pixel values from the binning model. The technique achieves about a one-decibel increase in the peak signal-to-noise ratio compared with the odginal estimated image. The technique has good detail pre-servation performance as well as low computation load. Thus, this restoration technique provides valuable improvements in practical, real time image processing.

  20. Scaling and Pixel Crosstalk Considerations for CMOS Image Sensor

    Institute of Scientific and Technical Information of China (English)

    JIN Xiang-liang; CHEN Jie(member,IEEE); QIU Yu-lin

    2003-01-01

    With the scaling development of the minimum lithographic size,the scaling trend of CMOS imager pixel size and fill factor has been computed according to the Moore rule.When the CMOS minimum lithographic feature scales down to 0.35 μm,the CCD image pixel size is not so easy to be reduced and but the CMOS image pixel size benefits from the scaling minimum lithographic feature. However, when the CMOS technology is downscaled to or under 0.35 μm,the fabrication of CMOS image sensors will be limited by the standard CMOS process in both ways of shallow trench isolation and source/drain junction,which results in pixel crosstalk.The impact of the crosstalk on the active pixel CMOS image sensor is analyzed based on the technology scaling.Some suppressed crosstalk methods have been reviewed.The best way is that combining the advantages of CMOS and SOI technology to fabricate the image sensors will reduce the pixel crosstalk.

  1. Edge pixel response studies of edgeless silicon sensor technology for pixellated imaging detectors

    International Nuclear Information System (INIS)

    Silicon sensor technologies with reduced dead area at the sensor's perimeter are under development at a number of institutes. Several fabrication methods for sensors which are sensitive close to the physical edge of the device are under investigation utilising techniques such as active-edges, passivated edges and current-terminating rings. Such technologies offer the goal of a seamlessly tiled detection surface with minimum dead space between the individual modules. In order to quantify the performance of different geometries and different bulk and implant types, characterisation of several sensors fabricated using active-edge technology were performed at the B16 beam line of the Diamond Light Source. The sensors were fabricated by VTT and bump-bonded to Timepix ROICs. They were 100 and 200 μ m thick sensors, with the last pixel-to-edge distance of either 50 or 100 μ m. The sensors were fabricated as either n-on-n or n-on-p type devices. Using 15 keV monochromatic X-rays with a beam spot of 2.5 μ m, the performance at the outer edge and corners pixels of the sensors was evaluated at three bias voltages. The results indicate a significant change in the charge collection properties between the edge and 5th (up to 275 μ m) from edge pixel for the 200 μ m thick n-on-n sensor. The edge pixel performance of the 100 μ m thick n-on-p sensors is affected only for the last two pixels (up to 110 μ m) subject to biasing conditions. Imaging characteristics of all sensor types investigated are stable over time and the non-uniformities can be minimised by flat-field corrections. The results from the synchrotron tests combined with lab measurements are presented along with an explanation of the observed effects

  2. 3D-FBK Pixel sensors: recent beam tests results with irradiated devices

    CERN Document Server

    Micelli, A; Sandaker, H; Stugu, B; Barbero, M; Hugging, F; Karagounis, M; Kostyukhin, V; Kruger, H; Tsung, J W; Wermes, N; Capua, M; Fazio, S; Mastroberardino, A; Susinno, G; Gallrapp, C; Di Girolamo, B; Dobos, D; La Rosa, A; Pernegger, H; Roe, S; Slavicek, T; Pospisil, S; Jakobs, K; Kohler, M; Parzefall, U; Darbo, G; Gariano, G; Gemme, C; Rovani, A; Ruscino, E; Butter, C; Bates, R; Oshea, V; Parker, S; Cavalli-Sforza, M; Grinstein, S; Korokolov, I; Pradilla, C; Einsweiler, K; Garcia-Sciveres, M; Borri, M; Da Via, C; Freestone, J; Kolya, S; Lai, C H; Nellist, C; Pater, J; Thompson, R; Watts, S J; Hoeferkamp, M; Seidel, S; Bolle, E; Gjersdal, H; Sjobaek, K N; Stapnes, S; Rohne, O; Su, D; Young, C; Hansson, P; Grenier, P; Hasi, J; Kenney, C; Kocian, M; Jackson, P; Silverstein, D; Davetak, H; DeWilde, B; Tsybychev, D; Dalla Betta, G F; Gabos, P; Povoli, M; Cobal, M; Giordani, M P; Selmi, L; Cristofoli, A; Esseni, D; Palestri, P; Fleta, C; Lozano, M; Pellegrini, G; Boscardin, M; Bagolini, A; Piemonte, C; Ronchin, S; Zorzi, N; Hansen, T E; Hansen, T; Kok, A; Lietaer, N; Kalliopuska, J; Oja, A

    2011-01-01

    The Pixel detector is the innermost part of the ATLAS experiment tracking device at the Large Hadron Collider (LHC), and plays a key role in the reconstruction of the primary and secondary vertices of short-lived particles. To cope with the high level of radiation produced during the collider operation, it is planned to add to the present three layers of silicon pixel sensors which constitute the Pixel Detector, an additional layer (Insertable B-Layer, or IBL) of sensors. 3D silicon sensors are one of the technologies which are under study for the IBL. 3D silicon technology is an innovative combination of very-large-scale integration (VLSI) and Micro-Electro-Mechanical-Systems (MEMS) where electrodes are fabricated inside the silicon bulk instead of being implanted on the wafer surfaces. 3D sensors, with electrodes fully or partially penetrating the silicon substrate, are currently fabricated at different processing facilities in Europe and USA. This paper reports on the 2010 June beam test results for irradi...

  3. E-Beam Effects on CMOS Active Pixel Sensors

    International Nuclear Information System (INIS)

    Three different CMOS active pixel structures manufactured in a deep submicron process have been evaluated with electron beam. The devices were exposed to 1 MeV electron beam up to 5kGy. Dark current increased after E-beam irradiation differently at each pixel structure. Dark current change is dependent on CMOS pixel structures. CMOS image sensors are now good candidates in demanding applications such as medical image sensor, particle detection and space remote sensing. In these situations, CISs are exposed to high doses of radiation. In fact radiation is known to generate trapped charge in CMOS oxides. It can lead to threshold voltage shifts and current leakages in MOSFETs and dark current increase in photodiodes. We studied ionizing effects in three types of CMOS APSs fabricated by 0.25 CMOS process. The devices were irradiated by a Co60 source up to 50kGy. All irradiation took place at room temperature. The dark current in the three different pixels exhibits increase with electron beam exposure. From the above figure, the change of dark current is dependent on the pixel structure. Double junction structure has shown relatively small increase of dark current after electron beam irradiation. The dark current in the three different pixels exhibits increase with electron beam exposure. The contribution of the total ionizing dose to the dark current increase is small here, since the devices were left unbiased during the electron beam irradiation. Radiation hardness in dependent on the pixel structures. Pixel2 is relatively vulnerable to radiation exposure. Pixel3 has radiation hardened structure

  4. Design and test of pixel sensors for operation in severe radiation environments

    Science.gov (United States)

    Hügging, F.; Lutz, G.; Richter, R. H.; Rohe, T.; Wunstorf, R.; Wüstenfeld, J.

    2000-01-01

    The inner detectors of LHC experiments will contain pixel detectors covering an area of several square meters. In addition they are facing the harsh radiation environment of the LHC. A first prototype sensor has been designed according to the requirements of the ATLAS experiment, produced and successfully tested with static measurements. Irradiation tests have also been performed with excellent results. The sensor is an n + n-device in order to allow partial depleted operation after bulk inversion and a guard ring scheme keeping the entire detector surface close to the electronic chip on ground potential. Further, a bias structure is introduced providing testability of the sensors prior to bump bonding and flip chipping.

  5. Design and test of pixel sensors for operation in severe radiation environments

    CERN Document Server

    Hügging, F G; Richter, R H; Rohe, T; Wunstorf, R; Wüstenfeld, J

    2000-01-01

    The inner detectors of LHC experiments will contain pixel detectors covering an area of several square meters. In addition they are facing the harsh radiation environment of the LHC. A first prototype sensor has been designed according to the requirements of the ATLAS experiment, produced and successfully tested with static measurements. Irradiation tests have also been performed with excellent results. The sensor is an n/sup +/n-device in order to allow partial depleted operation after bulk inversion and a guard ring scheme keeping the entire detector surface close to the electronic chip on ground potential. Further, a bias structure is introduced providing testability of the sensors prior to bump bonding and flip chipping. (13 refs).

  6. Characterization and performance studies of high-voltage CMOS based pixel sensors

    CERN Document Server

    Smaranda, Dumitru Dan

    2015-01-01

    The high luminosity upgrade of the LHC will push the limits for detectors, specially the silicon trackers which are closest to the interaction point. The ATLAS CMOS Sensor R&D efort is investigating a new technology using high-voltage CMOS processes for producing pixel and strip sensors. In contrast to the currently used technology these devices implement active electronics on the sensor itself, offering a multitude of tuning parameters for achieving the best performance. My summer project revolved around characterising existing samples along with assembling and debugging hardware required for their improvement and functionality. Other tasks involved writing communication protocols using pyBAR to remotely control injection circuitry on a GPAC card, and helping various members of the group with data collection and analysis. Through the summer student programme I have had the opportunity to be part of a vibrant scientic community at the forefront of research, to create bonds with fellow students from univ...

  7. Intrinsic Pixel Size Variation in an LSST Prototype Sensor

    CERN Document Server

    Baumer, Michael

    2015-01-01

    The ambitious science goals of the Large Synoptic Survey Telescope (LSST) have motivated a search for new and unexpected sources of systematic error in the LSST camera. Flat-field images are a rich source of data on sensor anomalies, although such effects are typically dwarfed by shot noise in a single flat field. After combining many ($\\sim 500$) such images into `ultraflats' to reduce the impact of shot noise, we perform photon transfer analysis on a pixel-by-pixel basis and observe no spatial structure in pixel linearity or gain at light levels of 100 ke$^-$ and below. At 125 ke$^-$, a columnar structure is observed in the gain map--we attribute this to a flux-dependent charge transfer inefficiency. We also probe small-scale variations in effective pixel size by analyzing pixel-neighbor correlations in ultraflat images, where we observe clear evidence of intrinsic variation in effective pixel size in an LSST prototype sensor near the $\\sim .3\\%$ level.

  8. Intrinsic pixel size variation in an LSST prototype sensor

    International Nuclear Information System (INIS)

    The ambitious science goals of the Large Synoptic Survey Telescope (LSST) have motivated a search for new and unexpected sources of systematic error in the LSST camera. Flat field images are a rich source of data on sensor anomalies, although such effects are typically dwarfed by shot noise in a single flat field. After combining many (0∼50) such images into 'ultraflats' to reduce the impact of shot noise, we perform photon transfer analysis on a pixel-by-pixel basis and observe no spatial structure in pixel linearity or gain at light levels of 100 ke− and below. At 125 ke−, a columnar structure is observed in the gain map—we attribute this to a flux-dependent charge-transfer inefficiency. We also probe small-scale variations in effective pixel size by analyzing pixel-neighbor correlations in ultraflat images, where we observe clear evidence of intrinsic variation in effective pixel size in an LSST prototype sensor near the ∼ .3% level

  9. Digital Pixel Sensor Array with Logarithmic Delta-Sigma Architecture

    Directory of Open Access Journals (Sweden)

    Jing Li

    2013-08-01

    Full Text Available Like the human eye, logarithmic image sensors achieve wide dynamic range easily at video rates, but, unlike the human eye, they suffer from low peak signal-to-noise-and-distortion ratios (PSNDRs. To improve the PSNDR, we propose integrating a delta-sigma analog-to-digital converter (ADC in each pixel. An image sensor employing this architecture is designed, built and tested in 0.18 micron complementary metal-oxide-semiconductor (CMOS technology. It achieves a PSNDR better than state-of-the-art logarithmic sensors and comparable to the human eye. As the approach concerns an array of many ADCs, we use a small-area low-power delta-sigma design. For scalability, each pixel has its own decimator. The prototype is compared to a variety of other image sensors, linear and nonlinear, from industry and academia.

  10. Digital pixel sensor array with logarithmic delta-sigma architecture.

    Science.gov (United States)

    Mahmoodi, Alireza; Li, Jing; Joseph, Dileepan

    2013-01-01

    Like the human eye, logarithmic image sensors achieve wide dynamic range easily at video rates, but, unlike the human eye, they suffer from low peak signal-to-noise-and-distortion ratios (PSNDRs). To improve the PSNDR, we propose integrating a delta-sigma analog-to-digital converter (ADC) in each pixel. An image sensor employing this architecture is designed, built and tested in 0.18 micron complementary metal-oxide-semiconductor (CMOS) technology. It achieves a PSNDR better than state-of-the-art logarithmic sensors and comparable to the human eye. As the approach concerns an array of many ADCs, we use a small-area low-power delta-sigma design. For scalability, each pixel has its own decimator. The prototype is compared to a variety of other image sensors, linear and nonlinear, from industry and academia. PMID:23959239

  11. Studio di Rivelatori a Pixel di nuova generazione per il Sistema di Tracciamento di ATLAS.

    CERN Document Server

    Gaudiello, Andrea; Schiavi, Carlo

    In 2013 the LHC will undergo a long shutdown (Phase 0) in preparation for a an energy and luminosity upgrade. During this period the ATLAS Pixel Detector (that is the tracking detector closest to the beamline) will be upgraded. The new detector, called Insertable B-Layer (IBL), will be installed between the existing pixel detector and a new beam-pipe of smaller radius in order to ensure and maintain excellent performance of tracking, vertexing and jet flavor tagging. To satisfy the new requirements a new electronic front- end (FE-I4) and 2 sensor technologies have been developed: Planar and 3D. Genova is one of two sites dedicated to the assembly of the modules of IBL. The work is then carried out in two parallel directions: on one hand the production and its optimization; on the other the comparison and testing of these new technologies. Chapter 1 gives an overview of the theoretical framework needed to understand the importance and the goals of the experiments operating at the Large Hadron Collider (LHC), w...

  12. The Pixel Detector of the ATLAS experiment for the Run2 at the Large Hadron Collider -- Plot Approval (Pixel, IBL) : This is a submission of plot approval request for Pixel+IBL, facing on a talk at ICHEP 2014 conference

    CERN Document Server

    Mandelli, B; The ATLAS collaboration

    2014-01-01

    The Pixel Detector of the ATLAS experiment has shown excellent performance during the whole Run-1 of LHC. Taking advantage of the long showdown, the detector was extracted from the experiment and brought to surface, to equip it with new service quarter panels, to repair modules and to ease installation of the Insertable B-Layer (IBL). IBL is a fourth layer of pixel detectors, and will be installed in May 2014 between the existing Pixel Detector and a new smaller radius beam-pipe at a radius of 3.3 cm. To cope with the high radiation and pixel occupancy due to the proximity to the interaction point, a new read-out chip and two different silicon sensor technologies (planar and 3D) have been developed. Furthermore, the physics performance will be improved through the reduction of pixel size while, targeting for a low material budget, a new mechanical support using lightweight staves and a CO2 based cooling system have been adopted. IBL construction is now completed. An overview of the IBL project as well as the ...

  13. Monolithic active pixel sensors (MAPS) in a VLSI CMOS technology

    CERN Document Server

    Turchetta, R; Manolopoulos, S; Tyndel, M; Allport, P P; Bates, R; O'Shea, V; Hall, G; Raymond, M

    2003-01-01

    Monolithic Active Pixel Sensors (MAPS) designed in a standard VLSI CMOS technology have recently been proposed as a compact pixel detector for the detection of high-energy charged particle in vertex/tracking applications. MAPS, also named CMOS sensors, are already extensively used in visible light applications. With respect to other competing imaging technologies, CMOS sensors have several potential advantages in terms of low cost, low power, lower noise at higher speed, random access of pixels which allows windowing of region of interest, ability to integrate several functions on the same chip. This brings altogether to the concept of 'camera-on-a-chip'. In this paper, we review the use of CMOS sensors for particle physics and we analyse their performances in term of the efficiency (fill factor), signal generation, noise, readout speed and sensor area. In most of high-energy physics applications, data reduction is needed in the sensor at an early stage of the data processing before transfer of the data to ta...

  14. CMOS Monolithic Active Pixel Sensors (MAPS): developments and future outlook

    NARCIS (Netherlands)

    R. Turchetta; A. Fant; P. Gasiorek; C. Esbrand; J.A. Griffiths; M.G. Metaxas; G.J. Royle; R. Speller; C. Venanzi; P.F. van der Stelt; H.G.C. Verheij; G. Li; S. Theodoridis; H. Georgiou; D. Cavouras; G. Hall; M. Noy; J. Jones; J. Leaver; D. Machin; S. Greenwood; M. Khaleeq; H. Schulerud; J.M. Østby; F. Triantis; A. Asimidis; D. Bolanakis; N. Manthos; R. Longo; A. Bergamaschi

    2007-01-01

    Re-invented in the early 1990s, on both sides of the Atlantic, Monolithic Active Pixel Sensors (MAPS) in a CMOS technology are today the most sold solid-state imaging devices, overtaking the traditional technology of Charge-Coupled Devices (CCD). The slow uptake of CMOS MAPS started with low-end app

  15. CMOS Monolithic Active Pixel Sensors (MAPS): developments and future outlook

    NARCIS (Netherlands)

    R. Turchetta; A. Fant; P. Gasiorek; C. Esbrand; J.A. Griffiths; M.G. Metaxas; G.J. Royle; R. Speller; C. Venanzi; P.F. van der Stelt; H.G.C. Verheij; G. Li; S. Theodoridis; H. Georgiou; D. Cavouras; G. Hall; M. Noy; J. Jones; J. Leaver; D. Machin; S. Greenwood; M. Khaleeq; H. Schulerud; J.M. Østby; F. Triantis; A. Asimidis; D. Bolanakis; N. Manthos; R. Longo; A. Bergamaschi

    2006-01-01

    Re-invented in the early 1990s, on both sides of the Atlantic, Monolithic Active Pixel Sensors (MAPS) in a CMOS technology are today the most sold solid-state imaging devices, overtaking the traditional technology of Charge-Coupled Devices (CCD). The slow uptake of CMOS MAPS started with low-end app

  16. A New Pixel Layer for ATLAS: The IBL

    CERN Document Server

    Kehal, Asma

    2013-01-01

    This report represents the main work in our intership at CERN we investegated the quality assurance of some staves by analyzed data . In this work, we briefly review the ATLAS detector, then we taken about IBL wish play an important role at ATLAS upgrade. And finally we analyzed data with Root to check the validity of the staves .

  17. Improving Charge-Collection Efficiency of Kyoto's SOI Pixel Sensors

    CERN Document Server

    Matsumura, Hideaki; Tanaka, Takaaki; Takeda, Ayaki; Ito, Makoto; Ohmura, Syunichi; Arai, Yasuo; Mori, Koji; Nishioka, Yusuke; Takenaka, Ryota; Kohmura, Takayoshi

    2015-01-01

    We have been developing X-ray SOIPIXs for next-generation satellites for X-ray astronomy. Their high time resolution ($\\sim10~\\mu$s) and event-trigger-output function enable us to read out without pile-ups and to use anti-coincidence systems. Their performance in imaging spectroscopy is comparable to that in the CCDs. A problem in our previous model was degradation of charge-collection efficiency (CCE) at pixel borders. We measured the response in the sub-pixel scale, using finely collimated X-ray beams at $10~\\mu$m\\Phi$ at SPring-8, and investigated the non-uniformity of the CCE within a pixel. We found that the X-ray detection efficiency and CCE degrade in the sensor region under the pixel circuitry placed outside the buried p-wells (BPW). A 2D simulation of the electric fields shows that the isolated pixel-circuitry outside the BPW creates local minimums in the electric potentials at the interface between the sensor and buried oxide layers. Thus, a part of signal charge is trapped there and is not collecte...

  18. From vertex detectors to inner trackers with CMOS pixel sensors

    OpenAIRE

    Besson, A.; Pérez, A. Pérez; Spiriti, E.; Baudot, J.; Claus, G; Goffe, M.; de Winter, M.

    2016-01-01

    The use of CMOS Pixel Sensors (CPS) for high resolution and low material vertex detectors has been validated with the 2014 and 2015 physics runs of the STAR-PXL detector at RHIC/BNL. This opens the door to the use of CPS for inner tracking devices, with 10-100 times larger sensitive area, which require therefore a sensor design privileging power saving, response uniformity and robustness. The 350 nm CMOS technology used for the STAR-PXL sensors was considered as too poorly suited to upcoming ...

  19. Measurements with a CMOS pixel sensor in magnetic fields

    Energy Technology Data Exchange (ETDEWEB)

    Boer, W. de; Bartsch, V.; Bol, J.; Dierlamm, A.; Grigoriev, E.; Hauler, F.; Herz, O.; Jungermann, L. E-mail: levin.jungermann@cern.ch; Koppenhoefer, M.; Sopczak, A.; Schneider, Th

    2002-07-11

    CMOS technique, which is the standard process used by most of the semiconductor factories worldwide, allows the production of both cheap and highly integrated sensors. The prototypes MIMOSA -I and MIMOSA-II were designed by the IReS-LEPSI collaboration in order to investigate the potential of this new technique for charged particle tracking (Design and Testing of Monolithic Active Pixel Sensors for Charged Particle Tracking, LEPSI, IN2P3, Strasbourg, France). For this purpose it is necessary to study the effects of magnetic fields as they appear in high-energy physics on these sensors.

  20. Development of Active Pixel Photodiode Sensors for Gamma Camera Application

    CERN Document Server

    Salahuddin, Nur Sultan; Heruseto, Brahmantyo; Parmentier, Michel

    2011-01-01

    We designed new photodiodes sensors including current mirror amplifiers. These photodiodes have been fabricated using a CMOS 0.6 micrometers process from Austria Micro System (AMS). The Photodiode areas are respectiveley 1mm x 1mm and 0.4mm x 0.4mm with fill factor 98 % and total chip area is 2 square millimetres. The sensor pixels show a logarithmic response in illumination and are capable of detecting very low blue light (less than 0.5 lux) . These results allow to use our sensor in new Gamma Camera solid-state concept.

  1. CMOS active pixel sensor for fault tolerance and background illumination subtraction

    OpenAIRE

    Cheung, Yu Hin (Desmond)

    2005-01-01

    As the CMOS active pixel sensor evolves, its weaknesses are being overcome and its strengths start to surpass that of the charge-coupled device. This thesis discusses two novel APS designs. The first novel APS design was a Fault Tolerance Active Pixel Sensor (FTAPS) to increase a pixel's tolerance to defects. By dividing a regular APS pixel into two halves, the reliability of the pixel is increased, resulting in higher fabrication yield, longer pixel life time, and reduction in cost. Photodio...

  2. Development of n-in-p silicon planar pixel sensors and flip-chip modules for very high radiation environments

    Science.gov (United States)

    Unno, Y.; Ikegami, Y.; Terada, S.; Mitsui, S.; Jinnouchi, O.; Kamada, S.; Yamamura, K.; Ishida, A.; Ishihara, M.; Inuzuka, T.; Hanagaki, K.; Hara, K.; Kondo, T.; Kimura, N.; Nakano, I.; Nagai, K.; Takashima, R.; Tojo, J.; Yorita, K.

    2011-09-01

    In this paper we present R&D of n-in-p pixel sensors, aiming for a very high radiation environment up to a fluence of 10 16 n eq/cm 2. To fabricate these sensors, two batches with different mask sets were employed: the first resulted in pixel sensors compatible with the ATLAS pixel readout frontend chip called FE-I3, and the second in FE-I3 and a new frontend chip, FE-I4, compatible sensors; small diodes were employed to investigate the width from the active diode to the dicing edge and the guard rings. Tests involving the diodes showed that the strong increase of leakage current was attributed to the edge current when the lateral depletion zone reaches the dicing edge and the lateral depletion along the silicon surface was correlated with the 'field' width. The onset was observed at a voltage of 1000 V when the width was equal to ˜400 μm. The pixel sensors that were diced at a width of 450 μm could successfully maintain a bias voltage of 1000 V. Hybrid flip-chip pixel modules with dummy and real chips were also fabricated. Lead (PbSn) solder bump bonding proved to be successful. However, lead-free (SnAg) solder bump bonding requires further optimization.

  3. Application-specific architectures of CMOS monolithic active pixel sensors

    Science.gov (United States)

    Szelezniak, Michal; Besson, Auguste; Claus, Gilles; Colledani, Claude; Degerli, Yavuz; Deptuch, Grzegorz; Deveaux, Michael; Dorokhov, Andrei; Dulinski, Wojciech; Fourches, Nicolas; Goffe, Mathieu; Grandjean, Damien; Guilloux, Fabrice; Heini, Sebastien; Himmi, Abdelkader; Hu, Christine; Jaaskelainen, Kimmo; Li, Yan; Lutz, Pierre; Orsini, Fabienne; Pellicioli, Michel; Shabetai, Alexandre; Valin, Isabelle; Winter, Marc

    2006-11-01

    Several development directions intended to adapt and optimize monolithic active pixel sensors for specific applications are presented in this work. The first example, compatible with the STAR microvertex upgrade, is based on a simple two-transistor pixel circuitry. It is suited for a long integration time, room-temperature operation and minimum power dissipation. In another approach for this application, a specific readout method is proposed, allowing optimization of the integration time independently of the full frame-readout time. The circuit consists of an in-pixel front-end voltage amplifier, with a gain on the order of five, followed by two analog memory cells. The extended version of this scheme, based on the implementation of more memory cells per pixel, is the solution considered for the outer layers of a microvertex detector at the international linear collider. For the two innermost layers, a circuit allowing fast frame scans together with on-line, on-chip data sparsification is proposed. The first results of this prototype demonstrate that the fixed pattern dispersion is reduced below a noise level of 15 e -, allowing the use of a single comparator or a low-resolution ADC per pixel column. A common element for most of the mentioned readout schemes is a low-noise, low power consumption, layout efficient in-pixel amplifier. A review of possible solutions for this element together with some experimental results is presented.

  4. New Active Digital Pixel Circuit for CMOS Image Sensor

    Institute of Scientific and Technical Information of China (English)

    2001-01-01

    A new active digital pixel circuit for CMOS image sensor is designed consisting of four components: a photo-transducer, a preamplifier, a sample & hold (S & H) circuit and an A/D converter with an inverter. It is optimized by simulation and adjustment based on 2μm standard CMOS process. Each circuit of the components is designed with specific parameters. The simulation results of the whole pixel circuits show that the circuit has such advantages as low distortion, low power consumption, and improvement of the output performances by using an inverter.

  5. The upgraded Pixel Detector of the ATLAS Experiment for Run-II at the Large Hadron Collider

    CERN Document Server

    Mullier, Geoffrey; The ATLAS collaboration

    2015-01-01

    The Pixel Detector of the ATLAS experiment has shown excellent performance during the whole Run-1 of the LHC. Taking advantage of the detector development period 2013 – 2014, the detector was extracted from the experiment and brought to surface to equip it with new service panels and to repair modules furthermore this helped with the installation of the Insertable B-Layer (IBL), fourth layer of pixel, installed in between the existing Pixel Detector and a new beam-pipe at a radius of 3.3 cm. To cope with the high radiation and increased pixel occupancy due to the proximity to the interaction point, two different silicon sensor technologies (planar and 3D) have been used. A new readout chip has been designed with CMOS 130nm technology with larger area, smaller pixel size and faster readout capability. Dedicated design features in combination with a new composite material were considered and used in order to reduce the material budget of the support structure while keeping the optimal thermo-mechanical perfor...

  6. CMOS Monolithic Active Pixel Sensors (MAPS): Developments and future outlook

    Energy Technology Data Exchange (ETDEWEB)

    Turchetta, R. [Rutherford Appleton Laboratory, Chilton, Didcot, Oxon OX11 0QX (United Kingdom)], E-mail: r.turchetta@rl.ac.uk; Fant, A.; Gasiorek, P. [Rutherford Appleton Laboratory, Chilton, Didcot, Oxon OX11 0QX (United Kingdom); Esbrand, C.; Griffiths, J.A.; Metaxas, M.G.; Royle, G.J.; Speller, R.; Venanzi, C. [Department of Medical Physics and Bioengineering, University College London (United Kingdom); Stelt, P.F. van der; Verheij, H.; Li, G. [Academic Centre for Dentistry, Vrije Universiteit and University of Amsterdam (Netherlands); Theodoridis, S.; Georgiou, H. [Department of Informatics and Telecommunications, University of Athens (Greece); Cavouras, D. [Medical Image and Signal Processing Laboratory, Department of Medical Instrument Technology, Technological Education Institution of Athens (Greece); Hall, G.; Noy, M.; Jones, J.; Leaver, J.; Machin, D. [High Energy Physics Group, Department of Physics, Imperial College, London (United Kingdom)] (and others)

    2007-12-01

    Re-invented in the early 1990s, on both sides of the Atlantic, Monolithic Active Pixel Sensors (MAPS) in a CMOS technology are today the most sold solid-state imaging devices, overtaking the traditional technology of Charge-Coupled Devices (CCD). The slow uptake of CMOS MAPS started with low-end applications, for example web-cams, and is slowly pervading the high-end applications, for example in prosumer digital cameras. Higher specifications are required for scientific applications: very low noise, high speed, high dynamic range, large format and radiation hardness are some of these requirements. This paper will present a brief overview of the CMOS Image Sensor technology and of the requirements for scientific applications. As an example, a sensor for X-ray imaging will be presented. This sensor was developed within a European FP6 Consortium, intelligent imaging sensors (I-ImaS)

  7. CMOS Monolithic Active Pixel Sensors (MAPS): Developments and future outlook

    International Nuclear Information System (INIS)

    Re-invented in the early 1990s, on both sides of the Atlantic, Monolithic Active Pixel Sensors (MAPS) in a CMOS technology are today the most sold solid-state imaging devices, overtaking the traditional technology of Charge-Coupled Devices (CCD). The slow uptake of CMOS MAPS started with low-end applications, for example web-cams, and is slowly pervading the high-end applications, for example in prosumer digital cameras. Higher specifications are required for scientific applications: very low noise, high speed, high dynamic range, large format and radiation hardness are some of these requirements. This paper will present a brief overview of the CMOS Image Sensor technology and of the requirements for scientific applications. As an example, a sensor for X-ray imaging will be presented. This sensor was developed within a European FP6 Consortium, intelligent imaging sensors (I-ImaS)

  8. Characterization of a three side abuttable CMOS pixel sensor with digital pixel and data compression for charged particle tracking

    Science.gov (United States)

    Guilloux, F.; Değerli, Y.; Flouzat, C.; Lachkar, M.; Monmarthe, E.; Orsini, F.; Venault, P.

    2016-02-01

    CMOS monolithic pixel sensor technology has been chosen to equip the new ALICE trackers for HL-LHC . PIXAM is the final prototype from an R&D program specific to the Muon Forward Tracker which intends to push significantly forward the performances of the mature rolling shutter architecture. By implementing a digital pixel allowing to readout of a group of rows in parallel, the PIXAM sensor increases the rolling shutter readout speed while keeping the same power consumption as that of analogue pixel sensors. This paper will describe shortly the ASIC architecture and will focus on the analogue and digital performances of the sensor, obtained from laboratory measurements.

  9. Characterization of a three side abuttable CMOS pixel sensor with digital pixel and data compression for charged particle tracking

    International Nuclear Information System (INIS)

    CMOS monolithic pixel sensor technology has been chosen to equip the new ALICE trackers for HL-LHC . PIXAM is the final prototype from an R and D program specific to the Muon Forward Tracker which intends to push significantly forward the performances of the mature rolling shutter architecture. By implementing a digital pixel allowing to readout of a group of rows in parallel, the PIXAM sensor increases the rolling shutter readout speed while keeping the same power consumption as that of analogue pixel sensors. This paper will describe shortly the ASIC architecture and will focus on the analogue and digital performances of the sensor, obtained from laboratory measurements

  10. Silicon sensors for the upgrades of the CMS pixel detector

    Energy Technology Data Exchange (ETDEWEB)

    Centis Vignali, Matteo

    2015-12-15

    The Compact Muon Solenoid (CMS) is a general purpose detector at the Large Hadron Collider (LHC). The LHC luminosity is constantly increased through upgrades of the accelerator and its injection chain. Two major upgrades will take place in the next years. The first upgrade involves the LHC injector chain and allows the collider to achieve a luminosity of about 2.10{sup 34} cm{sup -2}s{sup -1}. A further upgrade of the LHC foreseen for 2025 will boost its luminosity to 5.10{sup 34} cm{sup -2}s{sup -1}. As a consequence of the increased luminosity, the detectors need to be upgraded. In particular, the CMS pixel detector will undergo two upgrades in the next years. The first upgrade (phase I) consists in the substitution of the current pixel detector in winter 2016/2017. The upgraded pixel detector will implement new readout electronics that allow efficient data taking up to a luminosity of 2.10{sup 34} cm{sup -2}s{sup -1}, twice as much as the LHC design luminosity. The modules that will constitute the upgraded detector are being produced at different institutes. Hamburg (University and DESY) is responsible for the production of 350 pixel modules. The second upgrade (phase II) of the pixel detector is foreseen for 2025. The innermost pixel layer of the upgraded detector will accumulate a radiation damage corresponding to an equivalent fluence of Φ{sub eq}=2.10{sup 16} cm{sup -2} and a dose of ∼10 MGy after an integrated luminosity of 3000 fb{sup -1}. Several groups are investigating sensor designs and configurations able to withstand such high doses and fluences. This work is divided into two parts related to important aspects of the upgrades of the CMS pixel detector. For the phase I upgrade, a setup has been developed to provide an absolute energy calibration of the pixel modules that will constitute the detector. The calibration is obtained using monochromatic X-rays. The same setup is used to test the buffering capabilities of the modules' readout chip

  11. Silicon sensors for the upgrades of the CMS pixel detector

    International Nuclear Information System (INIS)

    The Compact Muon Solenoid (CMS) is a general purpose detector at the Large Hadron Collider (LHC). The LHC luminosity is constantly increased through upgrades of the accelerator and its injection chain. Two major upgrades will take place in the next years. The first upgrade involves the LHC injector chain and allows the collider to achieve a luminosity of about 2.1034 cm-2s-1. A further upgrade of the LHC foreseen for 2025 will boost its luminosity to 5.1034 cm-2s-1. As a consequence of the increased luminosity, the detectors need to be upgraded. In particular, the CMS pixel detector will undergo two upgrades in the next years. The first upgrade (phase I) consists in the substitution of the current pixel detector in winter 2016/2017. The upgraded pixel detector will implement new readout electronics that allow efficient data taking up to a luminosity of 2.1034 cm-2s-1, twice as much as the LHC design luminosity. The modules that will constitute the upgraded detector are being produced at different institutes. Hamburg (University and DESY) is responsible for the production of 350 pixel modules. The second upgrade (phase II) of the pixel detector is foreseen for 2025. The innermost pixel layer of the upgraded detector will accumulate a radiation damage corresponding to an equivalent fluence of Φeq=2.1016 cm-2 and a dose of ∼10 MGy after an integrated luminosity of 3000 fb-1. Several groups are investigating sensor designs and configurations able to withstand such high doses and fluences. This work is divided into two parts related to important aspects of the upgrades of the CMS pixel detector. For the phase I upgrade, a setup has been developed to provide an absolute energy calibration of the pixel modules that will constitute the detector. The calibration is obtained using monochromatic X-rays. The same setup is used to test the buffering capabilities of the modules' readout chip. The maximum rate experienced by the modules produced in Hamburg will be 120 MHz

  12. Commissioning and Operation of the ATLAS Pixel Detector at the CERN LHC Collider

    CERN Document Server

    Djama, F; The ATLAS collaboration

    2010-01-01

    Physics program at the CERN LHC collider started in autumn 2009. Since then, LHC daily delivers collisions between its two proton beams. This talk was devoted to the commissioning and early operation of the ATLAS Pixel Detector. The Pixel Detector is working nicely and all the required performances like efficiency, resolution and low noise were met. The fraction of working modules is as high as 97.4 %. The Pixel Detector fully participates in the reconstruction of charged particles trajectories, and is a key element in finding primary and secondary verticies and in tagging of short-lived particles.

  13. CMOS Monolithic Active Pixel Sensors (MAPS) for future vertex detectors

    International Nuclear Information System (INIS)

    This paper reviews the development of CMOS Monolithic Active Pixel Sensors (MAPS) for future vertex detectors. MAPS are developed in a standard CMOS technology. In the imaging field, where the technology found its first applications, they are also known as CMOS Image Sensors. The use of MAPS as a detector for particle physics was first proposed at the end of 1999. Since then, their good performance in terms of spatial resolution, efficiency, radiation hardness have been demonstrated and work is now well under way to deliver the first MAPS-based vertex detectors

  14. CMOS Monolithic Active Pixel Sensors (MAPS) for future vertex detectors

    CERN Document Server

    Turchetta, R

    2006-01-01

    This paper reviews the development of CMOS Monolithic Active Pixel Sensors (MAPS) for future vertex detectors. MAPS are developed in a standard CMOS technology. In the imaging field, where the technology found its first applications, they are also known as CMOS Image Sensors. The use of MAPS as a detector for particle physics was first proposed at the end of 1999. Since then, their good performance in terms of spatial resolution, efficiency, radiation hardness have been demonstrated and work is now well under way to deliver the first MAPS-based vertex detectors.

  15. DEPFET Active Pixel Sensors for the Belle II Experiment

    CERN Document Server

    Vazquez, P

    2010-01-01

    DEPleted Field Effect Transistor (DEPFET) active pixel detectors combine a first amplification stage with a fully depleted sensor in one single device, resulting in a very good signal-to-noise ratio even for thin sensors. DEPFET pixels are produced in MOS technology with two metal and two poly-silicon layers and have been developed for the use in Xray imaging and tracking in particle physics experiments. The sensor concept will be presented and all aspects of operation will be detailed with the focus on its application at the upgraded detector Belle II under preparation for the high-luminosity upgrade of the e+e- KEKB collider in Japan. The stringent requirements on excellent spatial resolution can be met by cell sizes as small as 25x25 um2 and minimal material budget. The readout ASICs attached to the sensors will be described as well as the module design and the thinning technology employed to reduced the active sensor thickness to as little as 50 um. DEPFET prototype performance at lab and beam tests will ...

  16. Evaluation of a single-pixel one-transistor active pixel sensor for fingerprint imaging

    Science.gov (United States)

    Xu, Man; Ou, Hai; Chen, Jun; Wang, Kai

    2015-08-01

    Since it first appeared in iPhone 5S in 2013, fingerprint identification (ID) has rapidly gained popularity among consumers. Current fingerprint-enabled smartphones unanimously consists of a discrete sensor to perform fingerprint ID. This architecture not only incurs higher material and manufacturing cost, but also provides only static identification and limited authentication. Hence as the demand for a thinner, lighter, and more secure handset grows, we propose a novel pixel architecture that is a photosensitive device embedded in a display pixel and detects the reflected light from the finger touch for high resolution, high fidelity and dynamic biometrics. To this purpose, an amorphous silicon (a-Si:H) dual-gate photo TFT working in both fingerprint-imaging mode and display-driving mode will be developed.

  17. Study of plasma charging-induced white pixel defect increase in CMOS active pixel sensor

    International Nuclear Information System (INIS)

    Plasma process-induced 'white pixel defect' (WPD) of CMOS active pixel sensor (APS) is studied for Si3N4 spacer etch back process by using a magnetically enhanced reactive ion etching (MERIE) system. WPD preferably takes place at the wafer edge region when the magnetized plasma is applied to Si3N4 etch. Plasma charging analysis reveals that the plasma charge-up characteristic is well matching the edge-intensive WPD generation, rather than the UV radiation. Plasma charging on APS transfer gate might lead to a gate leakage, which could play a role in generation of signal noise or WPD. In this article the WPD generation mechanism will be discussed from plasma charging point of view

  18. Studies for the detector control system of the ATLAS pixel at the HL-LHC

    International Nuclear Information System (INIS)

    In the context of the LHC upgrade to the HL-LHC the inner detector of the ATLAS experiment will be replaced completely. As part of this redesign there will also be a new pixel detector. This new pixel detector requires a control system which meets the strict space requirements for electronics in the ATLAS experiment. To accomplish this goal we propose a DCS (Detector Control System) network with the smallest form factor currently available. This network consists of a DCS chip located in close proximity to the interaction point and a DCS controller located in the outer regions of the ATLAS detector. These two types of chips form a star shaped network with several DCS chips being controlled by one DCS controller. Both chips are manufactured in deep sub-micron technology. We present prototypes with emphasis on studies concerning single event upsets.

  19. Signal processing algorithms for staring single pixel hyperspectral sensors

    Science.gov (United States)

    Manolakis, Dimitris; Rossacci, Michael; O'Donnell, Erin; D'Amico, Francis M.

    2006-08-01

    Remote sensing of chemical warfare agents (CWA) with stand-off hyperspectral sensors has a wide range of civilian and military applications. These sensors exploit the spectral changes in the ambient photon flux produced thermal emission or absorption after passage through a region containing the CWA cloud. In this work we focus on (a) staring single-pixel sensors that sample their field of view at regular intervals of time to produce a time series of spectra and (b) scanning single or multiple pixel sensors that sample their FOV as they scan. The main objective of signal processing algorithms is to determine if and when a CWA enters the FOV of the sensor. We shall first develop and evaluate algorithms for staring sensors following two different approaches. First, we will assume that no threat information is available and we design an adaptive anomaly detection algorithm to detect a statistically-significant change in the observed spectrum. The algorithm processes the observed spectra sequentially-in-time, estimates adaptively the background, and checks whether the next spectrum differs significantly from the background based on the Mahalanobis distance or the distance from the background subspace. In the second approach, we will assume that we know the spectral signature of the CWA and develop sequential-in-time adaptive matched filter detectors. In both cases, we assume that the sensor starts its operation before the release of the CWA; otherwise, staring at a nearby CWA-free area is required for background estimation. Experimental evaluation and comparison of the proposed algorithms is accomplished using data from a long-wave infrared (LWIR) Fourier transform spectrometer.

  20. Calibration Analysis Software for the ATLAS Pixel Detector

    CERN Document Server

    Stramaglia, Maria Elena; The ATLAS collaboration

    2015-01-01

    The calibration of the Pixel detector fulfills two main purposes: to tune front-end registers for establishing the best operational settings and to measure the tuning performance through a subset of scans. An analysis framework has been set up in order to take actions on the detector given the outcome of a calibration scan (e.g. to create a mask for disabling noisy pixels). The software framework to control all aspects of the Pixel detector scans and analyses is called Calibration Console. The introduction of a new layer, equipped with new Front End-I4 Chips, required an update the Console architecture. It now handles scans and scans analyses applied toghether to chips with dierent characteristics. An overview of the newly developed Calibration Analysis Software will be presented, together with some preliminary result.

  1. CMOS VLSI Active-Pixel Sensor for Tracking

    Science.gov (United States)

    Pain, Bedabrata; Sun, Chao; Yang, Guang; Heynssens, Julie

    2004-01-01

    An architecture for a proposed active-pixel sensor (APS) and a design to implement the architecture in a complementary metal oxide semiconductor (CMOS) very-large-scale integrated (VLSI) circuit provide for some advanced features that are expected to be especially desirable for tracking pointlike features of stars. The architecture would also make this APS suitable for robotic- vision and general pointing and tracking applications. CMOS imagers in general are well suited for pointing and tracking because they can be configured for random access to selected pixels and to provide readout from windows of interest within their fields of view. However, until now, the architectures of CMOS imagers have not supported multiwindow operation or low-noise data collection. Moreover, smearing and motion artifacts in collected images have made prior CMOS imagers unsuitable for tracking applications. The proposed CMOS imager (see figure) would include an array of 1,024 by 1,024 pixels containing high-performance photodiode-based APS circuitry. The pixel pitch would be 9 m. The operations of the pixel circuits would be sequenced and otherwise controlled by an on-chip timing and control block, which would enable the collection of image data, during a single frame period, from either the full frame (that is, all 1,024 1,024 pixels) or from within as many as 8 different arbitrarily placed windows as large as 8 by 8 pixels each. A typical prior CMOS APS operates in a row-at-a-time ( grolling-shutter h) readout mode, which gives rise to exposure skew. In contrast, the proposed APS would operate in a sample-first/readlater mode, suppressing rolling-shutter effects. In this mode, the analog readout signals from the pixels corresponding to the windows of the interest (which windows, in the star-tracking application, would presumably contain guide stars) would be sampled rapidly by routing them through a programmable diagonal switch array to an on-chip parallel analog memory array. The

  2. Design and characterization of high precision in-pixel discriminators for rolling shutter CMOS pixel sensors with full CMOS capability

    International Nuclear Information System (INIS)

    In order to exploit the ability to integrate a charge collecting electrode with analog and digital processing circuitry down to the pixel level, a new type of CMOS pixel sensors with full CMOS capability is presented in this paper. The pixel array is read out based on a column-parallel read-out architecture, where each pixel incorporates a diode, a preamplifier with a double sampling circuitry and a discriminator to completely eliminate analog read-out bottlenecks. The sensor featuring a pixel array of 8 rows and 32 columns with a pixel pitch of 80μm×16μm was fabricated in a 0.18μm CMOS process. The behavior of each pixel-level discriminator isolated from the diode and the preamplifier was studied. The experimental results indicate that all in-pixel discriminators which are fully operational can provide significant improvements in the read-out speed and the power consumption of CMOS pixel sensors

  3. Multi-chip module development for the ATLAS pixel detector. Analysis of the front-end chip electronics in radiation hard 0.25-μm technology as well as development and realization of a serial power concept

    International Nuclear Information System (INIS)

    The innermost layer of the ATLAS tracking system is a silicon pixel detector. The use of radiation tolerant components is mandatory due to the harsh radiation environment. The smallest independent component of the pixel detector is a hybride pixel module consisting of a large oxygen enriched silicon sensor and 16 specifically developed ASICs. To achieve the necessary radiation tolerance the ASICs are produced in a 0.25 μm technology in combination with special design techniques. The measurements of the readout electronics during all stages of production of a full module are presented and the performance of the modules is compared with the strict requirements of the ATLAS pixel detector. Furthermore a new powering scheme for pixel detectors is presented, aiming at reducing the total power consumption, the material for the electrical services and the amount of power cables. The advantages and disadvantages of this concept are discussed on the example of the ATLAS pixel detector with pixel modules modified accounting to the new powering scheme. The performance of six of those modules operating at the same time in a small system test is compared to that of normal ATLAS pixel modules. (orig.)

  4. A novel CMOS sensor with in-pixel auto-zeroed discrimination for charged particle tracking

    International Nuclear Information System (INIS)

    With the aim of developing fast and granular Monolithic Active Pixels Sensors (MAPS) as new charged particle tracking detectors for high energy physics experiments, a new rolling shutter binary pixel architecture concept (RSBPix) with in-pixel correlated double sampling, amplification and discrimination is presented. The discriminator features auto-zeroing in order to compensate process-related transistor mismatches. In order to validate the pixel, a first monolithic CMOS sensor prototype, including a pixel array of 96 × 64 pixels, has been designed and fabricated in the Tower-Jazz 0.18 μm CMOS Image Sensor (CIS) process. Results of laboratory tests are presented

  5. A Single-Transistor Active Pixel CMOS Image Sensor Architecture

    International Nuclear Information System (INIS)

    A single-transistor CMOS active pixel image sensor (1 T CMOS APS) architecture is proposed. By switching the photosensing pinned diode, resetting and selecting can be achieved by diode pull-up and capacitive coupling pull-down of the source follower. Thus, the reset and selected transistors can be removed. In addition, the reset and selected signal lines can be shared to reduce the metal signal line, leading to a very high fill factor. The pixel design and operation principles are discussed in detail. The functionality of the proposed 1T CMOS APS architecture has been experimentally verified using a fabricated chip in a standard 0.35 μm CMOS AMIS technology

  6. High-voltage pixel detectors in commercial CMOS technologies for ATLAS, CLIC and Mu3e experiments

    CERN Document Server

    Peric,I et al.

    2013-01-01

    High-voltage particle detectors in commercial CMOS technologies are a detector family that allows implementation of low-cost, thin and radiation-tolerant detectors with a high time resolution. In the R/D phase of the development, a radiation tolerance of 1015 neq=cm2 , nearly 100% detection efficiency and a spatial resolution of about 3 μm were demonstrated. Since 2011 the HV detectors have first applications: the technology is presently the main option for the pixel detector of the planned Mu3e experiment at PSI (Switzerland). Several prototype sensors have been designed in a standard 180 nm HV CMOS process and successfully tested. Thanks to its high radiation tolerance, the HV detectors are also seen at CERN as a promising alternative to the standard options for ATLAS upgrade and CLIC. In order to test the concept, within ATLAS upgrade R/D, we are currently exploring an active pixel detector demonstrator HV2FEI4; also implemented in the 180 nm HV process.

  7. High-voltage pixel detectors in commercial CMOS technologies for ATLAS, CLIC and Mu3e experiments

    CERN Document Server

    Peric, Ivan; Backhaus, Malte; Barbero, Marlon; Benoit, Mathieu; Berger, Niklaus; Bompard, Frederic; Breugnon, Patrick; Clemens, Jean-Claude; Dannheim, Dominik; Dierlamm, Alexander; Feigl, Simon; Fischer, Peter; Fougeron, Denis; Garcia-Sciveres, Maurice; Heim, Timon; Hügging, Fabian; Kiehn, Moritz; Kreidl, Christian; Krüger, Hans; La Rosa, Alessandro; Liu, Jian; Lütticke, Florian; Mariñas, Carlos; Meng, Lingxin; Miucci, Antonio; Münstermann, Daniel; Nguyen, Hong Hanh; Obermann, Theresa; Pangaud, Patrick; Perrevoort, Ann-Kathrin; Rozanov, Alexandre; Schöning, André; Schwenker, Benjamin; Wiedner, Dirk

    2013-01-01

    High-voltage particle detectors in commercial CMOS technologies are a detector family that allows implementation of low-cost, thin and radiation-tolerant detectors with a high time resolution. In the R/D phase of the development, a radiation tolerance of 10 15 n eq = cm 2 , nearly 100% detection ef fi ciency and a spatial resolution of about 3 μ m were demonstrated. Since 2011 the HV detectors have fi rst applications: the technology is presently the main option for the pixel detector of the planned Mu3e experiment at PSI (Switzerland). Several prototype sensors have been designed in a standard 180 nm HV CMOS process and successfully tested. Thanks to its high radiation tolerance, the HV detectors are also seen at CERN as a promising alternative to the standard options for ATLAS upgrade and CLIC. In order to test the concept, within ATLAS upgrade R/D, we are currently exploring an active pixel detector demonstrator HV2FEI4; also implemented in the 180 nm HV process

  8. A module concept for the upgrades of the ATLAS pixel system using the novel SLID-ICV vertical integration technology

    CERN Document Server

    Beimforde, M; Macchiolo, A; Moser, H G; Nisius, R; Richter, R H; Weigell, P; 10.1088/1748-0221/5/12/C12025

    2010-01-01

    The presented R&D activity is focused on the development of a new pixel module concept for the foreseen upgrades of the ATLAS detector towards the Super LHC employing thin n-in-p silicon sensors together with a novel vertical integration technology. A first set of pixel sensors with active thicknesses of 75 μm and 150 μm has been produced using a thinning technique developed at the Max-Planck-Institut für Physik (MPP) and the MPI Semiconductor Laboratory (HLL). Charge Collection Efficiency (CCE) measurements of these sensors irradiated with 26 MeV protons up to a particle fluence of 1016neqcm−2 have been performed, yielding higher values than expected from the present radiation damage models. The novel integration technology, developed by the Fraunhofer Institut EMFT, consists of the Solid-Liquid InterDiffusion (SLID) interconnection, being an alternative to the standard solder bump-bonding, and Inter-Chip Vias (ICVs) for routing signals vertically through electronics. This allows for extracting the ...

  9. The Pixels find their way to the heart of ATLAS

    CERN Multimedia

    Kevin Einsweiler

    Since the last e-news article on the Pixel Detector in December 2006, there has been much progress. At that time, we were just about to receive the Beryllium beampipe, and to integrate the innermost layer of the Pixel Detector around it. This innermost layer is referred to as the B-layer because of the powerful role it plays in finding the secondary vertices that are the key signature for the presence of b-quarks, and with somewhat greater difficulty, c-quarks and tau leptons. The integration of the central 7m long beampipe into the Pixel Detector was completed in December, and the B-layer was successfully integrated around it. In January this year, we had largely completed the central 1.5m long detector, including the three barrel layers and the three disk layers on each end of the barrel. Although this region contains all of the 80 million readout channels, it cannot be integrated into the Inner Detector without additional services and infrastructure. Therefore, the next step was to add the Service Panels...

  10. Development of a novel pixel-level signal processing chain for fast readout 3D integrated CMOS pixel sensors

    Energy Technology Data Exchange (ETDEWEB)

    Fu, Y.; Torheim, O.; Hu-Guo, C. [Institut Pluridisciplinaire Hubert Curien (IPHC), 23 rue du loess, BP 28, 67037 Strasbourg (France); Degerli, Y. [CEA Saclay, IRFU/SEDI, 91191 Gif-sur-Yvette Cedex (France); Hu, Y., E-mail: yann.hu@iphc.cnrs.fr [Institut Pluridisciplinaire Hubert Curien (IPHC), 23 rue du loess, BP 28, 67037 Strasbourg (France)

    2013-03-11

    In order to resolve the inherent readout speed limitation of traditional 2D CMOS pixel sensors, operated in rolling shutter readout, a parallel readout architecture has been developed by taking advantage of 3D integration technologies. Since the rows of the pixel array are zero-suppressed simultaneously instead of sequentially, a frame readout time of a few microseconds is expected for coping with high hit rates foreseen in future collider experiments. In order to demonstrate the pixel readout functionality of such a pixel sensor, a 2D proof-of-concept chip including a novel pixel-level signal processing chain was designed and fabricated in a 0.13μm CMOS technology. The functionalities of this chip have been verified through experimental characterization.

  11. Development of a novel pixel-level signal processing chain for fast readout 3D integrated CMOS pixel sensors

    International Nuclear Information System (INIS)

    In order to resolve the inherent readout speed limitation of traditional 2D CMOS pixel sensors, operated in rolling shutter readout, a parallel readout architecture has been developed by taking advantage of 3D integration technologies. Since the rows of the pixel array are zero-suppressed simultaneously instead of sequentially, a frame readout time of a few microseconds is expected for coping with high hit rates foreseen in future collider experiments. In order to demonstrate the pixel readout functionality of such a pixel sensor, a 2D proof-of-concept chip including a novel pixel-level signal processing chain was designed and fabricated in a 0.13μm CMOS technology. The functionalities of this chip have been verified through experimental characterization

  12. Studies for the detector control system of the ATLAS pixel at the HL-LHC

    CERN Document Server

    Püllen, L; Boek, J; Kersten, S; Kind, P; Mättig, P; Zeitnitz, C

    2012-01-01

    experiment will be replaced completely. As part of this redesign there will also be a new pixel detector. This new pixel detector requires a control system which meets the strict space requirements for electronics in the ATLAS experiment. To accomplish this goal we propose a DCS (Detector Control System) network with the smallest form factor currently available. This network consists of a DCS chip located in close proximity to the interaction point and a DCS controller located in the outer regions of the ATLAS detector. These two types of chips form a star shaped network with several DCS chips being controlled by one DCS controller. Both chips are manufactured in deep sub-micron technology. We present prototypes with emphasis on studies concerning single event upsets.

  13. Physics performance and upgrade for Run II of the ATLAS pixel detector

    International Nuclear Information System (INIS)

    The ATLAS pixel detector is the innermost detector of the ATLAS experiment at the Large Hadron Collider at CERN, providing high-resolution measurements of charged particle trajectories in the high radiation environment close to the collision region. The operation and performance of the pixel detector during the first years of LHC running are described. More than 96% of the detector modules were operational during this period, with an average intrinsic hit efficiency larger than 99%. The alignment of the detector was found to be stable at the few-micron level over long periods of time. Detector material description, tracking performances in Run I and expectations for the upcoming Run II are presented

  14. Electronic dosimetry and neutron metrology by CMOS active pixel sensor

    International Nuclear Information System (INIS)

    This work aims at demonstrating the possibility to use active pixel sensors as operational neutron dosemeters. To do so, the sensor that has been used has to be γ-transparent and to be able to detect neutrons on a wide energy range with a high detection efficiency. The response of the device, made of the CMOS sensor MIMOSA-5 and a converter in front of the sensor (polyethylene for fast neutron detection and 10B for thermal neutron detection), has been compared with Monte Carlo simulations carried out with MCNPX and GEANT4. These codes have been before-hand validated to check they can be used properly for our application. Experiments to characterize the sensor have been performed at IPHC and at IRSN/LMDN (Cadarache). The results of the sensor irradiation to photon sources and mixed field (241AmBe source) show the γ-transparency of the sensor by applying an appropriate threshold on the deposited energy (around 100 keV). The associated detection efficiency is satisfactory with a value of 10-3, in good agreement with MCNPX and GEANT4. Other features of the device have been tested with the same source, like the angular response. The last part of this work deals with the detection of thermal neutrons (eV-neutrons). Assays have been done in Cadarache (IRSN) with a 252Cf source moderated with heavy water (with and without cadmium shell). Results asserted a very high detection efficiency (up to 6*10-3 for a pure 10B converter) in good agreement with GEANT4. (author)

  15. CMOS Monolithic Active Pixel Sensors (MAPS): New 'eyes' for science

    International Nuclear Information System (INIS)

    Re-invented in the early 1990s on both sides of the Atlantic, Monolithic Active Pixel Sensors (MAPS) in a CMOS technology have slowly invaded the world of consumer imaging and are now on the edge of becoming the first technology in this field, previously dominated by Charge-Coupled Devices (CCD). Thanks to the advantages brought by the use of standard CMOS technology, MAPS have great potential in many areas including function integration, leading to the concept of a camera-on-a-chip, pixel size, random access to selected region-of-interest, low power, higher speed and radiation resistance. In many ways, MAPS have introduced a new way of doing imaging. Despite their success in the consumer arena, MAPS are still to make a definitive impact in the world of scientific imaging. This paper first briefly reviews the way radiation is detected by a CMOS sensor, before analysing the main noise source and its relationship with the full well capacity and the dynamic range. This paper will also show first examples of scientific results, obtained in the detection of low-energy electrons

  16. The ATLAS Pixel nSQP Readout Chain

    CERN Document Server

    Welch, S; The ATLAS collaboration

    2012-01-01

    Concerns regarding the failure of off detector optical components caused concern that on detector optical components would begin to fail in the same way. Therefor, replacements for the current Pixel Detector Service Quarter Panels have been designed and are under construction. The design challenges of the nSQP project are discussed and an overview of the changes is given. The nSQP project allows a few other upgrades to the current detector which are described. Finally a description of the design validation and testing on the new components is given.

  17. Study of silicon pixel sensor for synchrotron radiation detection

    Science.gov (United States)

    Li, Zhen-Jie; Jia, Yun-Cong; Hu, Ling-Fei; Liu, Peng; Yin, Hua-Xiang

    2016-03-01

    The silicon pixel sensor (SPS) is one of the key components of hybrid pixel single-photon-counting detectors for synchrotron radiation X-ray detection (SRD). In this paper, the design, fabrication, and characterization of SPSs for single beam X-ray photon detection is reported. The designed pixel sensor is a p+-in-n structure with guard-ring structures operated in full-depletion mode and is fabricated on 4-inch, N type, 320 μm thick, high-resistivity silicon wafers by a general Si planar process. To achieve high energy resolution of X-rays and obtain low dark current and high breakdown voltage as well as appropriate depletion voltage of the SPS, a series of technical optimizations of device structure and fabrication process are explored. With optimized device structure and fabrication process, excellent SPS characteristics with dark current of 2 nA/cm2, full depletion voltage 150 V are achieved. The fabricated SPSs are wire bonded to ASIC circuits and tested for the performance of X-ray response to the 1W2B synchrotron beam line of the Beijing Synchrotron Radiation Facility. The measured S-curves for SRD demonstrate a high discrimination for different energy X-rays. The extracted energy resolution is high (10 keV) and the linear properties between input photo energy and the equivalent generator amplitude are well established. It confirmed that the fabricated SPSs have a good energy linearity and high count rate with the optimized technologies. The technology is expected to have a promising application in the development of a large scale SRD system for the Beijing Advanced Photon Source. Supported by Prefabrication Research of Beijing Advanced Photon Source (R&D for BAPS) and National Natural Science Foundation of China (11335010)

  18. Status of the ATLAS Pixel Detector at the LHC and its performance after three years of operation

    CERN Document Server

    Andreazza, A; The ATLAS collaboration

    2012-01-01

    The ATLAS Pixel Detector is the innermost detector of the ATLAS experiment at the Large Hadron Collider at CERN, providing high-resolution measurements of charged particle tracks in the high radiation environment close to the collision region. This capability is vital for the identification and measurement of proper decay times of long-lived particles such as b-hadrons, and thus vital for the ATLAS physics program. The detector provides hermetic coverage with three cylindrical layers and three layers of forward and backward pixel detectors. It consists of approximately 80 million pixels that are individually read out via chips bump-bonded to 1744 n-in-n silicon substrates. In this talk, results from the successful operation of the Pixel Detector at the LHC and its status after three years of operation will be presented, including monitoring, calibration procedures, timing optimization and detector performance. The detector performance is excellent: ~96 % of the pixels are operational, noise occupancy and hit ...

  19. Radiation-Hard Opto-Link for the Atlas Pixel Detector

    OpenAIRE

    Gan, K. K.

    2004-01-01

    The on-detector optical link of the ATLAS pixel detector contains radiation-hard receiver chips to decode bi-phase marked signals received on PIN arrays and data transmitter chips to drive VCSEL arrays. The components are mounted on hybrid boards (opto-boards). We present results from the opto-boards and from irradiation studies with 24 GeV protons up to 33 Mrad (1.2 x 10^15 p/cm^2).

  20. Design and development of the IBL-BOC firmware for the ATLAS Pixel IBL optical datalink system

    CERN Document Server

    AUTHOR|(INSPIRE)INSPIRE-00356268

    The Insertable $b$-Layer (IBL) is the first upgrade of the ATLAS Pixel detector at the LHC. It will be installed in the Pixel detector in 2013. The IBL will use a new sensor and readout technology, therefore the readout components of the current Pixel detector are redesigned for the readout of the IBL. In this diploma thesis the design and development of the firmware for the new IBL Back-of-Crate card (IBL-BOC) are described. The IBL-BOC is located on the off-detector side of the readout and performs the optical-electrical conversion and vice versa for the optical connection to and from the detector. To process the data transmitted to and received from the detector, the IBL-BOC uses multiple Field Programmable Gate Arrays (FPGA). The transmitted signal is a 40~Mb/s BiPhase Mark (BPM) encoded data stream, providing the timing, trigger and control to the detector. The received signal is a 160~Mb/s 8b10b encoded data stream, containing data from the detector. The IBL-BOC encodes and decodes these data streams. T...

  1. From vertex detectors to inner trackers with CMOS pixel sensors

    CERN Document Server

    Besson, A; Spiriti, E; Baudot, J; Claus, G; Goffe, M; Winter, M

    2016-01-01

    The use of CMOS Pixel Sensors (CPS) for high resolution and low material vertex detectors has been validated with the 2014 and 2015 physics runs of the STAR-PXL detector at RHIC/BNL. This opens the door to the use of CPS for inner tracking devices, with 10-100 times larger sensitive area, which require therefore a sensor design privileging power saving, response uniformity and robustness. The 350 nm CMOS technology used for the STAR-PXL sensors was considered as too poorly suited to upcoming applications like the upgraded ALICE Inner Tracking System (ITS), which requires sensors with one order of magnitude improvement on readout speed and improved radiation tolerance. This triggered the exploration of a deeper sub-micron CMOS technology, Tower-Jazz 180 nm, for the design of a CPS well adapted for the new ALICE-ITS running conditions. This paper reports the R&D results for the conception of a CPS well adapted for the ALICE-ITS.

  2. A Measurement of Lorentz Angle and Spatial Resolution of Radiation Hard Silicon Pixel Sensors

    CERN Document Server

    Gorelov, I; Hoeferkamp, M; Seidel, S C; Ciocio, A; Einsweiler, Kevin F; Gilchriese, M G D; Joshi, A; Kleinfelder, S A; Marchesini, R; Milgrome, O; Palaio, N; Pengg, F X; Richardson, J; Zizka, G; Ackers, M; Fischer, P; Keil, M; Meuser, S; Stockmanns, T; Treis, J; Wermes, N; Gössling, C; Hügging, F G; Wüstenfeld, J; Wunstorf, R; Barberis, D; Beccherle, R; Cervetto, M; Darbo, G; Gagliardi, G; Gemme, C; Morettini, P; Netchaeva, P; Osculati, B; Parodi, F; Rossi, L; Dao, K; Fasching, D; Blanquart, L; Breugnon, P; Calvet, D; Clemens, J C; Delpierre, P A; Hallewell, G D; Laugier, D; Mouthuy, T; Rozanov, A N; Trouilleau, C; Valin, I; Aleppo, M; Andreazza, A; Caccia, M; Lari, T; Meroni, C; Ragusa, F; Troncon, C; Vegni, G; Rohe, T; Boyd, G; Severini, H; Skubic, P L; Snow, J; Sícho, P; Tomasek, L; Vrba, V; Holder, M; Lipka, D; Ziolkowski, M; Cauz, D; D'Auria, S; del Papa, C; Grassman, H; Santi, L; Becks, K H; Gerlach, P; Grah, C; Gregor, I; Harenberg, T; Linder, C

    2002-01-01

    Silicon pixel sensors developed by the ATLAS collaboration to meet LHC requirements and to withstand hadronic irradiation to fluences of up to $10^{15} n_eq/cm^{2}$ have been evaluated using a test beam facility at CERN providing a magnetic field. The Lorentz angle was measured and found to alter from 9.0 deg. before irradiation, when the detectors operated at 150 V bias at B=1.48 T, to 3.1 deg after irradiation and operating at 600 V bias at 1.01 T. In addition to the effect due to magnetic field variation, this change is explained by the variation of the electric field inside the detectors arising from the different bias conditions. The depletion depths of irradiated sensors at various bias voltages were also measured. At 600 V bias 280 micron thick sensors depleted to ~200 micron after irradiation at the design fluence of 1 10^{15} 1 MeV n_eq/cm2 and were almost fully depleted at a fluence of 0.5 * 10^{15} 1 MeV n_eq/cm2. The spatial resolution was measured for angles of incidence between 0 deg and 30 deg....

  3. Robustness of the Artificial Neural Networks Used for Clustering in the ATLAS Pixel Detector

    CERN Document Server

    The ATLAS collaboration

    2015-01-01

    A study of the robustness of the ATLAS pixel neural network clustering algorithm is presented. The sensitivity to variations to its input is evaluated. These variations are motivated by potential discrepancies between data and simulation due to uncertainties in the modelling of pixel clusters in simulation, as well as uncertainties from the detector calibration. Within reasonable variation magnitudes, the neural networks prove to be robust to most variations. The neural network used to identify pixel clusters created by multiple charged particles, is most sensitive to variations affecting the total amount of charge collected in the cluster. Modifying the read-out threshold has the biggest effect on the clustering's ability to estimate the position of the particle's intersection with the detector.

  4. The Layer 1 / Layer 2 readout upgrade for the ATLAS Pixel Detector

    CERN Document Server

    Mullier, Geoffrey; The ATLAS collaboration

    2016-01-01

    The Pixel Detector of the ATLAS experiment has shown excellent performance during the whole Run-1 of the Large Hadron Collider (LHC). The increase of instantaneous luminosity foreseen during the LHC Run 2, will lead to an increased detector occupancy that is expected to saturate the readout links of the outermost layers of the pixel detector: Layers 1 and 2. To ensure a smooth data taking under such conditions, the read out system of the recently installed fourth innermost pixel layer, the Insertable B-Layer, was modified to accomodate the needs of the older detector. The Layer 2 upgrade installation took place during the 2015 winter shutdown, with the Layer 1 installation scheduled for 2016. A report of the successful installation, together with the design of novel dedicated optical to electrical converters and the software and firmware updates will be presented.

  5. The Upgraded Pixel Detector of the ATLAS Experiment for Run-2

    CERN Document Server

    Ferrere, Didier; The ATLAS collaboration

    2016-01-01

    Run-2 of the LHC is providing new challenges to track and vertex reconstruction with higher energies, denser jets and higher rates. Therefore the ATLAS experiment has constructed the first 4-layer Pixel detector in HEP, installing a new Pixel layer, also called Insertable B-Layer (IBL). IBL is a fourth layer of pixel detectors, and has been installed in May 2014 at a radius of 3.3 cm between the existing Pixel Detector and a new smaller radius beam-pipe. The new detector, built to cope with high radiation and expected occupancy, is the first large scale application of 3D detectors and CMOS 130nm technology. In addition the Pixel detector was refurbished with a new service quarter panel to recover about 3% of defective modules lost during run-1 and a new optical readout system to readout the data at higher speed while reducing the occupancy when running with increased luminosity. The commissioning and performance of the 4-layer Pixel Detector, in particular the IBL, will be presented, using collision data.

  6. Study of FPGA and GPU based pixel calibration for ATLAS IBL

    CERN Document Server

    Dopke, J; The ATLAS collaboration; Flick, T; Gabrielli, A; Grosse-Knetter, J; Krieger, N; Kugel, A; Polini, A; Schroer, N

    2010-01-01

    The insertable B-layer (IBL) is a new stage of the ATLAS pixel detector to be installed around 2014. 12 million pixel are attached to new FE-I4 readout ASICs, each controlling 26680 pixel. Compared to the existing FE-I3 based detector the new system features higher readout speed of 160Mbit/s per ASIC and simplified control. For calibration defined charges are applied to all pixels and the resulting time-over-threshold values are evaluated. In the present system multiple sets of two custom VME cards which employ a combination of FPGA and DSP technology are used for I/O interfacing, formatting and processing. The execution time of 51s to perform a threshold scan on a FE-I3 module of 46080 pixel is composed of 8s control, 29s transfer, 7.5s histogramming and 7s analysis. Extrapolating to FE-I4 the times per module of 53760 pixels are 12ms, 5.8s, 9.4s and 8.3s, a total of 23.5s. We present a proposal for a novel approach to the dominant tasks for FE-I4: histogramming and ananlysis. An FPGA-based histogramming uni...

  7. Charge collection properties of a depleted monolithic active pixel sensor using a HV-SOI process

    International Nuclear Information System (INIS)

    New pixel detector concepts, based on commercial high voltage and/or high resistivity CMOS processes, are being investigated as a possible candidate to the inner and outer layers of the ATLAS Inner Tracker in the HL-LHC upgrade. A depleted monolithic active pixel sensor on thick film SOI technology is being extensively investigated for that purpose. This particular technology provides a double well structure, which shields the thin gate oxide transistors from the Buried Oxide (BOX). In addition, the distance between transistors and BOX is one order of magnitude bigger than conventional SOI technologies, making the technology promising against its main limitations, as radiation hardness or back gate effects. Its radiation hardness to Total Ionizing Dose (TID) and the absence of back gate effect up to 700 Mrad has been measured and published [1]. The process allows the use of high voltages (up to 300V) which are used to partially deplete the substrate. The process allows fabrication in higher resistivity, therefore a fully depleted substrate could be achieved after thinning. This article shows the results on charge collection properties of the silicon bulk below the BOX by different techniques, in a laboratory with radioactive sources and by edge Transient Current Technique, for unirradiated and irradiated samples

  8. Charge collection properties of a depleted monolithic active pixel sensor using a HV-SOI process

    Science.gov (United States)

    Fernandez-Perez, S.; Backhaus, M.; Fernandez-Garcia, M.; Gallrapp, C.; Hemperek, T.; Kishishita, T.; Krueger, H.; Moll, M.; Padilla, C.; Pernegger, H.

    2016-01-01

    New pixel detector concepts, based on commercial high voltage and/or high resistivity CMOS processes, are being investigated as a possible candidate to the inner and outer layers of the ATLAS Inner Tracker in the HL-LHC upgrade. A depleted monolithic active pixel sensor on thick film SOI technology is being extensively investigated for that purpose. This particular technology provides a double well structure, which shields the thin gate oxide transistors from the Buried Oxide (BOX). In addition, the distance between transistors and BOX is one order of magnitude bigger than conventional SOI technologies, making the technology promising against its main limitations, as radiation hardness or back gate effects. Its radiation hardness to Total Ionizing Dose (TID) and the absence of back gate effect up to 700 Mrad has been measured and published [1]. The process allows the use of high voltages (up to 300V) which are used to partially deplete the substrate. The process allows fabrication in higher resistivity, therefore a fully depleted substrate could be achieved after thinning. This article shows the results on charge collection properties of the silicon bulk below the BOX by different techniques, in a laboratory with radioactive sources and by edge Transient Current Technique, for unirradiated and irradiated samples.

  9. Design optimization of pixel sensors using device simulations for the phase-II CMS tracker upgrade

    Science.gov (United States)

    Jain, G.; Bhardwaj, A.; Dalal, R.; Eber, R.; Eichorn, T.; Fernandez, M.; Lalwani, K.; Messineo, A.; Palomo, F. R.; Peltola, T.; Printz, M.; Ranjan, K.; Villa, I.; Hidalgo, S.

    2016-07-01

    In order to address the problems caused by the harsh radiation environment during the high luminosity phase of the LHC (HL-LHC), all silicon tracking detectors (pixels and strips) in the CMS experiment will undergo an upgrade. And so to develop radiation hard pixel sensors, simulations have been performed using the 2D TCAD device simulator, SILVACO, to obtain design parameters. The effect of various design parameters like pixel size, pixel depth, implant width, metal overhang, p-stop concentration, p-stop depth and bulk doping density on the leakage current and critical electric field are studied for both non-irradiated as well as irradiated pixel sensors. These 2D simulation results of planar pixels are useful for providing insight into the behaviour of non-irradiated and irradiated silicon pixel sensors and further work on 3D simulation is underway.

  10. High bandwidth pixel detector modules for the ATLAS Insertable B-Layer

    CERN Document Server

    Backhaus, Malte

    2014-02-19

    The investigation of the nature of the recently discovered electro-weak symmetry breaking mechanism of the standard model of particle physics as well as the search for physics beyond the standard model with the LHC require to collect even more data. To achieve this goal, the luminosity of the LHC will be increased in two steps. The increased luminosity results in serious challenges for the inner tracking systems of the experiments at the LHC. The ATLAS pixel detector will also be upgraded in a two stage program. During the shutdown in 2013 and 2014 a fourth hybrid pixel detector layer, the so-called Insertable B-Layer (IBL) is inserted inside the existing pixel detector. This thesis focuses on the characterization, performance measurement, and production quality assurance of the central sensitive elements of the IBL, the modules. This includes a full characterization of the readout chip (FE-I4) and of the assembled modules. A completely new inner tracking system is mandatory in ATLAS after the second luminosi...

  11. Production and characterisation of SLID interconnected n-in-p pixel modules with 75 μm thin silicon sensors

    International Nuclear Information System (INIS)

    The performance of pixel modules built from 75 μm thin silicon sensors and ATLAS read-out chips employing the Solid Liquid InterDiffusion (SLID) interconnection technology is presented. This technology, developed by the Fraunhofer EMFT, is a possible alternative to the standard bump-bonding. It allows for stacking of different interconnected chip and sensor layers without destroying the already formed bonds. In combination with Inter-Chip-Vias (ICVs) this paves the way for vertical integration. Both technologies are combined in a pixel module concept which is the basis for the modules discussed in this paper. Mechanical and electrical parameters of pixel modules employing both SLID interconnections and sensors of 75 μm thickness are covered. The mechanical features discussed include the interconnection efficiency, alignment precision and mechanical strength. The electrical properties comprise the leakage currents, tuning characteristics, charge collection, cluster sizes and hit efficiencies. Targeting at a usage at the high luminosity upgrade of the LHC accelerator called HL-LHC, the results were obtained before and after irradiation up to fluences of 1016neq/cm2

  12. Evaluation of KEK n-in-p planar pixel sensor structures for very high radiation environments with testbeam

    International Nuclear Information System (INIS)

    Various structures for n-in-p planar pixel sensors have been developed at KEK in order to cope with the huge particle fluence in the upcoming LHC upgrades. Performances of the sensors with different structures have been evaluated with testbeam. The n-in-p devices were connected by bump-bonding to the ATLAS Pixel front-end chip (FE-I4A) and characterized before and after the irradiation to 1×1016 1 MeV neq/cm2. Results of measurements with 120 GeV/c momentum pion beam at the CERN Super Proton Synchrotron (SPS) in September 2012 are presented. - Highlights: • Pixel sensors with two biasing and two isolation structures were evaluated. • Overall hit efficiency of 97.6% was confirmed at −1200 V after 1×1016neq/cm2. • Inefficiency regions were observed in non-irradiated samples with P-spray isolation. • Inefficiency regions after high irradiation were observed under bias rail and PolySi. • The potential of the surface structure is thought to affect the charge collection

  13. Monte Carlo Study of the Dosimetry of Small-Photon Beams Using CMOS Active Pixel Sensors

    OpenAIRE

    Jimenez Spang, F.

    2014-01-01

    Stereotactic radiosurgery is an increasingly common treatment modality that uses very small photon fields. This technique imposes high dosimetric standards and complexities that remain unsolved. In this work the dosimetric performance of CMOS active pixel sensors is presented for the measurement of small-photons beams. A novel CMOS active pixel sensor called Vanilla developed for scientific applications was used. The detector is an array of 520 × 520 pixels on a 25 μm pitch which allows up to...

  14. A neural network clustering algorithm for the ATLAS silicon pixel detector

    CERN Document Server

    Aad, Georges; Abdallah, Jalal; Abdel Khalek, Samah; Abdinov, Ovsat; Aben, Rosemarie; Abi, Babak; Abolins, Maris; AbouZeid, Ossama; Abramowicz, Halina; Abreu, Henso; Abreu, Ricardo; Abulaiti, Yiming; Acharya, Bobby Samir; Adamczyk, Leszek; Adams, David; Adelman, Jahred; Adomeit, Stefanie; Adye, Tim; Agatonovic-Jovin, Tatjana; Aguilar-Saavedra, Juan Antonio; Agustoni, Marco; Ahlen, Steven; Ahmadov, Faig; Aielli, Giulio; Akerstedt, Henrik; Åkesson, Torsten Paul Ake; Akimoto, Ginga; Akimov, Andrei; Alberghi, Gian Luigi; Albert, Justin; Albrand, Solveig; Alconada Verzini, Maria Josefina; Aleksa, Martin; Aleksandrov, Igor; Alexa, Calin; Alexander, Gideon; Alexandre, Gauthier; Alexopoulos, Theodoros; Alhroob, Muhammad; Alimonti, Gianluca; Alio, Lion; Alison, John; Allbrooke, Benedict; Allison, Lee John; Allport, Phillip; Almond, John; Aloisio, Alberto; Alonso, Alejandro; Alonso, Francisco; Alpigiani, Cristiano; Altheimer, Andrew David; Alvarez Gonzalez, Barbara; Alviggi, Mariagrazia; Amako, Katsuya; Amaral Coutinho, Yara; Amelung, Christoph; Amidei, Dante; Amor Dos Santos, Susana Patricia; Amorim, Antonio; Amoroso, Simone; Amram, Nir; Amundsen, Glenn; Anastopoulos, Christos; Ancu, Lucian Stefan; Andari, Nansi; Andeen, Timothy; Anders, Christoph Falk; Anders, Gabriel; Anderson, Kelby; Andreazza, Attilio; Andrei, George Victor; Anduaga, Xabier; Angelidakis, Stylianos; Angelozzi, Ivan; Anger, Philipp; Angerami, Aaron; Anghinolfi, Francis; Anisenkov, Alexey; Anjos, Nuno; Annovi, Alberto; Antonaki, Ariadni; Antonelli, Mario; Antonov, Alexey; Antos, Jaroslav; Anulli, Fabio; Aoki, Masato; Aperio Bella, Ludovica; Apolle, Rudi; Arabidze, Giorgi; Aracena, Ignacio; Arai, Yasuo; Araque, Juan Pedro; Arce, Ayana; Arguin, Jean-Francois; Argyropoulos, Spyridon; Arik, Metin; Armbruster, Aaron James; Arnaez, Olivier; Arnal, Vanessa; Arnold, Hannah; Arratia, Miguel; Arslan, Ozan; Artamonov, Andrei; Artoni, Giacomo; Asai, Shoji; Asbah, Nedaa; Ashkenazi, Adi; Åsman, Barbro; Asquith, Lily; Assamagan, Ketevi; Astalos, Robert; Atkinson, Markus; Atlay, Naim Bora; Auerbach, Benjamin; Augsten, Kamil; Aurousseau, Mathieu; Avolio, Giuseppe; Azuelos, Georges; Azuma, Yuya; Baak, Max; Baas, Alessandra; Bacci, Cesare; Bachacou, Henri; Bachas, Konstantinos; Backes, Moritz; Backhaus, Malte; Backus Mayes, John; Badescu, Elisabeta; Bagiacchi, Paolo; Bagnaia, Paolo; Bai, Yu; Bain, Travis; Baines, John; Baker, Oliver Keith; Balek, Petr; Balli, Fabrice; Banas, Elzbieta; Banerjee, Swagato; Bannoura, Arwa A E; Bansal, Vikas; Bansil, Hardeep Singh; Barak, Liron; Baranov, Sergei; Barberio, Elisabetta Luigia; Barberis, Dario; Barbero, Marlon; Barillari, Teresa; Barisonzi, Marcello; Barklow, Timothy; Barlow, Nick; Barnett, Bruce; Barnett, Michael; Barnovska, Zuzana; Baroncelli, Antonio; Barone, Gaetano; Barr, Alan; Barreiro, Fernando; Barreiro Guimarães da Costa, João; Bartoldus, Rainer; Barton, Adam Edward; Bartos, Pavol; Bartsch, Valeria; Bassalat, Ahmed; Basye, Austin; Bates, Richard; Batkova, Lucia; Batley, Richard; Battaglia, Marco; Battistin, Michele; Bauer, Florian; Bawa, Harinder Singh; Beau, Tristan; Beauchemin, Pierre-Hugues; Beccherle, Roberto; Bechtle, Philip; Beck, Hans Peter; Becker, Anne Kathrin; Becker, Sebastian; Beckingham, Matthew; Becot, Cyril; Beddall, Andrew; Beddall, Ayda; Bedikian, Sourpouhi; Bednyakov, Vadim; Bee, Christopher; Beemster, Lars; Beermann, Thomas; Begel, Michael; Behr, Katharina; Belanger-Champagne, Camille; Bell, Paul; Bell, William; Bella, Gideon; Bellagamba, Lorenzo; Bellerive, Alain; Bellomo, Massimiliano; Belotskiy, Konstantin; Beltramello, Olga; Benary, Odette; Benchekroun, Driss; Bendtz, Katarina; Benekos, Nektarios; Benhammou, Yan; Benhar Noccioli, Eleonora; Benitez Garcia, Jorge-Armando; Benjamin, Douglas; Bensinger, James; Benslama, Kamal; Bentvelsen, Stan; Berge, David; Bergeaas Kuutmann, Elin; Berger, Nicolas; Berghaus, Frank; Beringer, Jürg; Bernard, Clare; Bernat, Pauline; Bernius, Catrin; Bernlochner, Florian Urs; Berry, Tracey; Berta, Peter; Bertella, Claudia; Bertoli, Gabriele; Bertolucci, Federico; Bertsche, David; Besana, Maria Ilaria; Besjes, Geert-Jan; Bessidskaia, Olga; Bessner, Martin Florian; Besson, Nathalie; Betancourt, Christopher; Bethke, Siegfried; Bhimji, Wahid; Bianchi, Riccardo-Maria; Bianchini, Louis; Bianco, Michele; Biebel, Otmar; Bieniek, Stephen Paul; Bierwagen, Katharina; Biesiada, Jed; Biglietti, Michela; Bilbao De Mendizabal, Javier; Bilokon, Halina; Bindi, Marcello; Binet, Sebastien; Bingul, Ahmet; Bini, Cesare; Black, Curtis; Black, James; Black, Kevin; Blackburn, Daniel; Blair, Robert; Blanchard, Jean-Baptiste; Blazek, Tomas; Bloch, Ingo; Blocker, Craig; Blum, Walter; Blumenschein, Ulrike; Bobbink, Gerjan; Bobrovnikov, Victor; Bocchetta, Simona Serena; Bocci, Andrea; Bock, Christopher; Boddy, Christopher Richard; Boehler, Michael; Boek, Thorsten Tobias; Bogaerts, Joannes Andreas; Bogdanchikov, Alexander; Bogouch, Andrei; Bohm, Christian; Bohm, Jan; Boisvert, Veronique; Bold, Tomasz; Boldea, Venera; Boldyrev, Alexey; Bomben, Marco; Bona, Marcella; Boonekamp, Maarten; Borisov, Anatoly; Borissov, Guennadi; Borri, Marcello; Borroni, Sara; Bortfeldt, Jonathan; Bortolotto, Valerio; Bos, Kors; Boscherini, Davide; Bosman, Martine; Boterenbrood, Hendrik; Boudreau, Joseph; Bouffard, Julian; Bouhova-Thacker, Evelina Vassileva; Boumediene, Djamel Eddine; Bourdarios, Claire; Bousson, Nicolas; Boutouil, Sara; Boveia, Antonio; Boyd, James; Boyko, Igor; Bracinik, Juraj; Brandt, Andrew; Brandt, Gerhard; Brandt, Oleg; Bratzler, Uwe; Brau, Benjamin; Brau, James; Braun, Helmut; Brazzale, Simone Federico; Brelier, Bertrand; Brendlinger, Kurt; Brennan, Amelia Jean; Brenner, Richard; Bressler, Shikma; Bristow, Kieran; Bristow, Timothy Michael; Britton, Dave; Brochu, Frederic; Brock, Ian; Brock, Raymond; Bromberg, Carl; Bronner, Johanna; Brooijmans, Gustaaf; Brooks, Timothy; Brooks, William; Brosamer, Jacquelyn; Brost, Elizabeth; Brown, Jonathan; Bruckman de Renstrom, Pawel; Bruncko, Dusan; Bruneliere, Renaud; Brunet, Sylvie; Bruni, Alessia; Bruni, Graziano; Bruschi, Marco; Bryngemark, Lene; Buanes, Trygve; Buat, Quentin; Bucci, Francesca; Buchholz, Peter; Buckingham, Ryan; Buckley, Andrew; Buda, Stelian Ioan; Budagov, Ioulian; Buehrer, Felix; Bugge, Lars; Bugge, Magnar Kopangen; Bulekov, Oleg; Bundock, Aaron Colin; Burckhart, Helfried; Burdin, Sergey; Burghgrave, Blake; Burke, Stephen; Burmeister, Ingo; Busato, Emmanuel; Büscher, Daniel; Büscher, Volker; Bussey, Peter; Buszello, Claus-Peter; Butler, Bart; Butler, John; Butt, Aatif Imtiaz; Buttar, Craig; Butterworth, Jonathan; Butti, Pierfrancesco; Buttinger, William; Buzatu, Adrian; Byszewski, Marcin; Cabrera Urbán, Susana; Caforio, Davide; Cakir, Orhan; Calafiura, Paolo; Calandri, Alessandro; Calderini, Giovanni; Calfayan, Philippe; Calkins, Robert; Caloba, Luiz; Calvet, David; Calvet, Samuel; Camacho Toro, Reina; Camarda, Stefano; Cameron, David; Caminada, Lea Michaela; Caminal Armadans, Roger; Campana, Simone; Campanelli, Mario; Campoverde, Angel; Canale, Vincenzo; Canepa, Anadi; Cano Bret, Marc; Cantero, Josu; Cantrill, Robert; Cao, Tingting; Capeans Garrido, Maria Del Mar; Caprini, Irinel; Caprini, Mihai; Capua, Marcella; Caputo, Regina; Cardarelli, Roberto; Carli, Tancredi; Carlino, Gianpaolo; Carminati, Leonardo; Caron, Sascha; Carquin, Edson; Carrillo-Montoya, German D; Carter, Janet; Carvalho, João; Casadei, Diego; Casado, Maria Pilar; Casolino, Mirkoantonio; Castaneda-Miranda, Elizabeth; Castelli, Angelantonio; Castillo Gimenez, Victoria; Castro, Nuno Filipe; Catastini, Pierluigi; Catinaccio, Andrea; Catmore, James; Cattai, Ariella; Cattani, Giordano; Caughron, Seth; Cavaliere, Viviana; Cavalli, Donatella; Cavalli-Sforza, Matteo; Cavasinni, Vincenzo; Ceradini, Filippo; Cerio, Benjamin; Cerny, Karel; Cerqueira, Augusto Santiago; Cerri, Alessandro; Cerrito, Lucio; Cerutti, Fabio; Cerv, Matevz; Cervelli, Alberto; Cetin, Serkant Ali; Chafaq, Aziz; Chakraborty, Dhiman; Chalupkova, Ina; Chang, Philip; Chapleau, Bertrand; Chapman, John Derek; Charfeddine, Driss; Charlton, Dave; Chau, Chav Chhiv; Chavez Barajas, Carlos Alberto; Cheatham, Susan; Chegwidden, Andrew; Chekanov, Sergei; Chekulaev, Sergey; Chelkov, Gueorgui; Chelstowska, Magda Anna; Chen, Chunhui; Chen, Hucheng; Chen, Karen; Chen, Liming; Chen, Shenjian; Chen, Xin; Chen, Yujiao; Cheng, Hok Chuen; Cheng, Yangyang; Cheplakov, Alexander; Cherkaoui El Moursli, Rajaa; Chernyatin, Valeriy; Cheu, Elliott; Chevalier, Laurent; Chiarella, Vitaliano; Chiefari, Giovanni; Childers, John Taylor; Chilingarov, Alexandre; Chiodini, Gabriele; Chisholm, Andrew; Chislett, Rebecca Thalatta; Chitan, Adrian; Chizhov, Mihail; Chouridou, Sofia; Chow, Bonnie Kar Bo; Chromek-Burckhart, Doris; Chu, Ming-Lee; Chudoba, Jiri; Chwastowski, Janusz; Chytka, Ladislav; Ciapetti, Guido; Ciftci, Abbas Kenan; Ciftci, Rena; Cinca, Diane; Cindro, Vladimir; Ciocio, Alessandra; Cirkovic, Predrag; Citron, Zvi Hirsh; Citterio, Mauro; Ciubancan, Mihai; Clark, Allan G; Clark, Philip James; Clarke, Robert; Cleland, Bill; Clemens, Jean-Claude; Clement, Christophe; Coadou, Yann; Cobal, Marina; Coccaro, Andrea; Cochran, James H; Coffey, Laurel; Cogan, Joshua Godfrey; Coggeshall, James; Cole, Brian; Cole, Stephen; Colijn, Auke-Pieter; Collot, Johann; Colombo, Tommaso; Colon, German; Compostella, Gabriele; Conde Muiño, Patricia; Coniavitis, Elias; Conidi, Maria Chiara; Connell, Simon Henry; Connelly, Ian; Consonni, Sofia Maria; Consorti, Valerio; Constantinescu, Serban; Conta, Claudio; Conti, Geraldine; Conventi, Francesco; Cooke, Mark; Cooper, Ben; Cooper-Sarkar, Amanda; Cooper-Smith, Neil; Copic, Katherine; Cornelissen, Thijs; Corradi, Massimo; Corriveau, Francois; Corso-Radu, Alina; Cortes-Gonzalez, Arely; Cortiana, Giorgio; Costa, Giuseppe; Costa, María José; Costanzo, Davide; Côté, David; Cottin, Giovanna; Cowan, Glen; Cox, Brian; Cranmer, Kyle; Cree, Graham; Crépé-Renaudin, Sabine; Crescioli, Francesco; Cribbs, Wayne Allen; Crispin Ortuzar, Mireia; Cristinziani, Markus; Croft, Vince; Crosetti, Giovanni; Cuciuc, Constantin-Mihai; Cuhadar Donszelmann, Tulay; Cummings, Jane; Curatolo, Maria; Cuthbert, Cameron; Czirr, Hendrik; Czodrowski, Patrick; Czyczula, Zofia; D'Auria, Saverio; D'Onofrio, Monica; Da Cunha Sargedas De Sousa, Mario Jose; Da Via, Cinzia; Dabrowski, Wladyslaw; Dafinca, Alexandru; Dai, Tiesheng; Dale, Orjan; Dallaire, Frederick; Dallapiccola, Carlo; Dam, Mogens; Daniells, Andrew Christopher; Dano Hoffmann, Maria; Dao, Valerio; Darbo, Giovanni; Darmora, Smita; Dassoulas, James; Dattagupta, Aparajita; Davey, Will; David, Claire; Davidek, Tomas; Davies, Eleanor; Davies, Merlin; Davignon, Olivier; Davison, Adam; Davison, Peter; Davygora, Yuriy; Dawe, Edmund; Dawson, Ian; Daya-Ishmukhametova, Rozmin; De, Kaushik; de Asmundis, Riccardo; De Castro, Stefano; De Cecco, Sandro; De Groot, Nicolo; de Jong, Paul; De la Torre, Hector; De Lorenzi, Francesco; De Nooij, Lucie; De Pedis, Daniele; De Salvo, Alessandro; De Sanctis, Umberto; De Santo, Antonella; De Vivie De Regie, Jean-Baptiste; Dearnaley, William James; Debbe, Ramiro; Debenedetti, Chiara; Dechenaux, Benjamin; Dedovich, Dmitri; Deigaard, Ingrid; Del Peso, Jose; Del Prete, Tarcisio; Deliot, Frederic; Delitzsch, Chris Malena; Deliyergiyev, Maksym; Dell'Acqua, Andrea; Dell'Asta, Lidia; Dell'Orso, Mauro; Della Pietra, Massimo; della Volpe, Domenico; Delmastro, Marco; Delsart, Pierre-Antoine; Deluca, Carolina; Demers, Sarah; Demichev, Mikhail; Demilly, Aurelien; Denisov, Sergey; Derendarz, Dominik; Derkaoui, Jamal Eddine; Derue, Frederic; Dervan, Paul; Desch, Klaus Kurt; Deterre, Cecile; Deviveiros, Pier-Olivier; Dewhurst, Alastair; Dhaliwal, Saminder; Di Ciaccio, Anna; Di Ciaccio, Lucia; Di Domenico, Antonio; Di Donato, Camilla; Di Girolamo, Alessandro; Di Girolamo, Beniamino; Di Mattia, Alessandro; Di Micco, Biagio; Di Nardo, Roberto; Di Simone, Andrea; Di Sipio, Riccardo; Di Valentino, David; Dias, Flavia; Diaz, Marco Aurelio; Diehl, Edward; Dietrich, Janet; Dietzsch, Thorsten; Diglio, Sara; Dimitrievska, Aleksandra; Dingfelder, Jochen; Dionisi, Carlo; Dita, Petre; Dita, Sanda; Dittus, Fridolin; Djama, Fares; Djobava, Tamar; do Vale, Maria Aline Barros; Do Valle Wemans, André; Doan, Thi Kieu Oanh; Dobos, Daniel; Doglioni, Caterina; Doherty, Tom; Dohmae, Takeshi; Dolejsi, Jiri; Dolezal, Zdenek; Dolgoshein, Boris; Donadelli, Marisilvia; Donati, Simone; Dondero, Paolo; Donini, Julien; Dopke, Jens; Doria, Alessandra; Dova, Maria-Teresa; Doyle, Tony; Dris, Manolis; Dubbert, Jörg; Dube, Sourabh; Dubreuil, Emmanuelle; Duchovni, Ehud; Duckeck, Guenter; Ducu, Otilia Anamaria; Duda, Dominik; Dudarev, Alexey; Dudziak, Fanny; Duflot, Laurent; Duguid, Liam; Dührssen, Michael; Dunford, Monica; Duran Yildiz, Hatice; Düren, Michael; Durglishvili, Archil; Dwuznik, Michal; Dyndal, Mateusz; Ebke, Johannes; Edson, William; Edwards, Nicholas Charles; Ehrenfeld, Wolfgang; Eifert, Till; Eigen, Gerald; Einsweiler, Kevin; Ekelof, Tord; El Kacimi, Mohamed; Ellert, Mattias; Elles, Sabine; Ellinghaus, Frank; Ellis, Nicolas; Elmsheuser, Johannes; Elsing, Markus; Emeliyanov, Dmitry; Enari, Yuji; Endner, Oliver Chris; Endo, Masaki; Engelmann, Roderich; Erdmann, Johannes; Ereditato, Antonio; Eriksson, Daniel; Ernis, Gunar; Ernst, Jesse; Ernst, Michael; Ernwein, Jean; Errede, Deborah; Errede, Steven; Ertel, Eugen; Escalier, Marc; Esch, Hendrik; Escobar, Carlos; Esposito, Bellisario; Etienvre, Anne-Isabelle; Etzion, Erez; Evans, Hal; Ezhilov, Alexey; Fabbri, Laura; Facini, Gabriel; Fakhrutdinov, Rinat; Falciano, Speranza; Falla, Rebecca Jane; Faltova, Jana; Fang, Yaquan; Fanti, Marcello; Farbin, Amir; Farilla, Addolorata; Farooque, Trisha; Farrell, Steven; Farrington, Sinead; Farthouat, Philippe; Fassi, Farida; Fassnacht, Patrick; Fassouliotis, Dimitrios; Favareto, Andrea; Fayard, Louis; Federic, Pavol; Fedin, Oleg; Fedorko, Wojciech; Fehling-Kaschek, Mirjam; Feigl, Simon; Feligioni, Lorenzo; Feng, Cunfeng; Feng, Eric; Feng, Haolu; Fenyuk, Alexander; Fernandez Perez, Sonia; Ferrag, Samir; Ferrando, James; Ferrari, Arnaud; Ferrari, Pamela; Ferrari, Roberto; Ferreira de Lima, Danilo Enoque; Ferrer, Antonio; Ferrere, Didier; Ferretti, Claudio; Ferretto Parodi, Andrea; Fiascaris, Maria; Fiedler, Frank; Filipčič, Andrej; Filipuzzi, Marco; Filthaut, Frank; Fincke-Keeler, Margret; Finelli, Kevin Daniel; Fiolhais, Miguel; Fiorini, Luca; Firan, Ana; Fischer, Adam; Fischer, Julia; Fisher, Wade Cameron; Fitzgerald, Eric Andrew; Flechl, Martin; Fleck, Ivor; Fleischmann, Philipp; Fleischmann, Sebastian; Fletcher, Gareth Thomas; Fletcher, Gregory; Flick, Tobias; Floderus, Anders; Flores Castillo, Luis; Florez Bustos, Andres Carlos; Flowerdew, Michael; Formica, Andrea; Forti, Alessandra; Fortin, Dominique; Fournier, Daniel; Fox, Harald; Fracchia, Silvia; Francavilla, Paolo; Franchini, Matteo; Franchino, Silvia; Francis, David; Franklin, Melissa; Franz, Sebastien; Fraternali, Marco; French, Sky; Friedrich, Conrad; Friedrich, Felix; Froidevaux, Daniel; Frost, James; Fukunaga, Chikara; Fullana Torregrosa, Esteban; Fulsom, Bryan Gregory; Fuster, Juan; Gabaldon, Carolina; Gabizon, Ofir; Gabrielli, Alessandro; Gabrielli, Andrea; Gadatsch, Stefan; Gadomski, Szymon; Gagliardi, Guido; Gagnon, Pauline; Galea, Cristina; Galhardo, Bruno; Gallas, Elizabeth; Gallo, Valentina Santina; Gallop, Bruce; Gallus, Petr; Galster, Gorm Aske Gram Krohn; Gan, KK; Gandrajula, Reddy Pratap; Gao, Jun; Gao, Yongsheng; Garay Walls, Francisca; Garberson, Ford; García, Carmen; García Navarro, José Enrique; Garcia-Sciveres, Maurice; Gardner, Robert; Garelli, Nicoletta; Garonne, Vincent; Gatti, Claudio; Gaudio, Gabriella; Gaur, Bakul; Gauthier, Lea; Gauzzi, Paolo; Gavrilenko, Igor; Gay, Colin; Gaycken, Goetz; Gazis, Evangelos; Ge, Peng; Gecse, Zoltan; Gee, Norman; Geerts, Daniël Alphonsus Adrianus; Geich-Gimbel, Christoph; Gellerstedt, Karl; Gemme, Claudia; Gemmell, Alistair; Genest, Marie-Hélène; Gentile, Simonetta; George, Matthias; George, Simon; Gerbaudo, Davide; Gershon, Avi; Ghazlane, Hamid; Ghodbane, Nabil; Giacobbe, Benedetto; Giagu, Stefano; Giangiobbe, Vincent; Giannetti, Paola; Gianotti, Fabiola; Gibbard, Bruce; Gibson, Stephen; Gilchriese, Murdock; Gillam, Thomas; Gillberg, Dag; Gilles, Geoffrey; Gingrich, Douglas; Giokaris, Nikos; Giordani, MarioPaolo; Giordano, Raffaele; Giorgi, Filippo Maria; Giorgi, Francesco Michelangelo; Giraud, Pierre-Francois; Giugni, Danilo; Giuliani, Claudia; Giulini, Maddalena; Gjelsten, Børge Kile; Gkaitatzis, Stamatios; Gkialas, Ioannis; Gladilin, Leonid; Glasman, Claudia; Glatzer, Julian; Glaysher, Paul; Glazov, Alexandre; Glonti, George; Goblirsch-Kolb, Maximilian; Goddard, Jack Robert; Godfrey, Jennifer; Godlewski, Jan; Goeringer, Christian; Goldfarb, Steven; Golling, Tobias; Golubkov, Dmitry; Gomes, Agostinho; Gomez Fajardo, Luz Stella; Gonçalo, Ricardo; Goncalves Pinto Firmino Da Costa, Joao; Gonella, Laura; González de la Hoz, Santiago; Gonzalez Parra, Garoe; Gonzalez-Sevilla, Sergio; Goossens, Luc; Gorbounov, Petr Andreevich; Gordon, Howard; Gorelov, Igor; Gorini, Benedetto; Gorini, Edoardo; Gorišek, Andrej; Gornicki, Edward; Goshaw, Alfred; Gössling, Claus; Gostkin, Mikhail Ivanovitch; Gouighri, Mohamed; Goujdami, Driss; Goulette, Marc Phillippe; Goussiou, Anna; Goy, Corinne; Gozpinar, Serdar; Grabas, Herve Marie Xavier; Graber, Lars; Grabowska-Bold, Iwona; Grafström, Per; Grahn, Karl-Johan; Gramling, Johanna; Gramstad, Eirik; Grancagnolo, Sergio; Grassi, Valerio; Gratchev, Vadim; Gray, Heather; Graziani, Enrico; Grebenyuk, Oleg; Greenwood, Zeno Dixon; Gregersen, Kristian; Gregor, Ingrid-Maria; Grenier, Philippe; Griffiths, Justin; Grillo, Alexander; Grimm, Kathryn; Grinstein, Sebastian; Gris, Philippe Luc Yves; Grishkevich, Yaroslav; Grivaz, Jean-Francois; Grohs, Johannes Philipp; Grohsjean, Alexander; Gross, Eilam; Grosse-Knetter, Joern; Grossi, Giulio Cornelio; Groth-Jensen, Jacob; Grout, Zara Jane; Guan, Liang; Guescini, Francesco; Guest, Daniel; Gueta, Orel; Guicheney, Christophe; Guido, Elisa; Guillemin, Thibault; Guindon, Stefan; Gul, Umar; Gumpert, Christian; Gunther, Jaroslav; Guo, Jun; Gupta, Shaun; Gutierrez, Phillip; Gutierrez Ortiz, Nicolas Gilberto; Gutschow, Christian; Guttman, Nir; Guyot, Claude; Gwenlan, Claire; Gwilliam, Carl; Haas, Andy; Haber, Carl; Hadavand, Haleh Khani; Haddad, Nacim; Haefner, Petra; Hageböck, Stephan; Hajduk, Zbigniew; Hakobyan, Hrachya; Haleem, Mahsana; Hall, David; Halladjian, Garabed; Hamacher, Klaus; Hamal, Petr; Hamano, Kenji; Hamer, Matthias; Hamilton, Andrew; Hamilton, Samuel; Hamnett, Phillip George; Han, Liang; Hanagaki, Kazunori; Hanawa, Keita; Hance, Michael; Hanke, Paul; Hanna, Remie; Hansen, Jørgen Beck; Hansen, Jorn Dines; Hansen, Peter Henrik; Hara, Kazuhiko; Hard, Andrew; Harenberg, Torsten; Hariri, Faten; Harkusha, Siarhei; Harper, Devin; Harrington, Robert; Harris, Orin; Harrison, Paul Fraser; Hartjes, Fred; Hasegawa, Satoshi; Hasegawa, Yoji; Hasib, A; Hassani, Samira; Haug, Sigve; Hauschild, Michael; Hauser, Reiner; Havranek, Miroslav; Hawkes, Christopher; Hawkings, Richard John; Hawkins, Anthony David; Hayashi, Takayasu; Hayden, Daniel; Hays, Chris; Hayward, Helen; Haywood, Stephen; Head, Simon; Heck, Tobias; Hedberg, Vincent; Heelan, Louise; Heim, Sarah; Heim, Timon; Heinemann, Beate; Heinrich, Lukas; Hejbal, Jiri; Helary, Louis; Heller, Claudio; Heller, Matthieu; Hellman, Sten; Hellmich, Dennis; Helsens, Clement; Henderson, James; Henderson, Robert; Heng, Yang; Hengler, Christopher; Henrichs, Anna; Henriques Correia, Ana Maria; Henrot-Versille, Sophie; Hensel, Carsten; Herbert, Geoffrey Henry; Hernández Jiménez, Yesenia; Herrberg-Schubert, Ruth; Herten, Gregor; Hertenberger, Ralf; Hervas, Luis; Hesketh, Gavin Grant; Hessey, Nigel; Hickling, Robert; Higón-Rodriguez, Emilio; Hill, Ewan; Hill, John; Hiller, Karl Heinz; Hillert, Sonja; Hillier, Stephen; Hinchliffe, Ian; Hines, Elizabeth; Hirose, Minoru; Hirschbuehl, Dominic; Hobbs, John; Hod, Noam; Hodgkinson, Mark; Hodgson, Paul; Hoecker, Andreas; Hoeferkamp, Martin; Hoffman, Julia; Hoffmann, Dirk; Hofmann, Julia Isabell; Hohlfeld, Marc; Holmes, Tova Ray; Hong, Tae Min; Hooft van Huysduynen, Loek; Hostachy, Jean-Yves; Hou, Suen; Hoummada, Abdeslam; Howard, Jacob; Howarth, James; Hrabovsky, Miroslav; Hristova, Ivana; Hrivnac, Julius; Hryn'ova, Tetiana; Hsu, Catherine; Hsu, Pai-hsien Jennifer; Hsu, Shih-Chieh; Hu, Diedi; Hu, Xueye; Huang, Yanping; Hubacek, Zdenek; Hubaut, Fabrice; Huegging, Fabian; Huffman, Todd Brian; Hughes, Emlyn; Hughes, Gareth; Huhtinen, Mika; Hülsing, Tobias Alexander; Hurwitz, Martina; Huseynov, Nazim; Huston, Joey; Huth, John; Iacobucci, Giuseppe; Iakovidis, Georgios; Ibragimov, Iskander; Iconomidou-Fayard, Lydia; Ideal, Emma; Iengo, Paolo; Igonkina, Olga; Iizawa, Tomoya; Ikegami, Yoichi; Ikematsu, Katsumasa; Ikeno, Masahiro; Ilchenko, Iurii; Iliadis, Dimitrios; Ilic, Nikolina; Inamaru, Yuki; Ince, Tayfun; Ioannou, Pavlos; Iodice, Mauro; Iordanidou, Kalliopi; Ippolito, Valerio; Irles Quiles, Adrian; Isaksson, Charlie; Ishino, Masaya; Ishitsuka, Masaki; Ishmukhametov, Renat; Issever, Cigdem; Istin, Serhat; Iturbe Ponce, Julia Mariana; Iuppa, Roberto; Ivarsson, Jenny; Iwanski, Wieslaw; Iwasaki, Hiroyuki; Izen, Joseph; Izzo, Vincenzo; Jackson, Brett; Jackson, Matthew; Jackson, Paul; Jaekel, Martin; Jain, Vivek; Jakobs, Karl; Jakobsen, Sune; Jakoubek, Tomas; Jakubek, Jan; Jamin, David Olivier; Jana, Dilip; Jansen, Eric; Jansen, Hendrik; Janssen, Jens; Janus, Michel; Jarlskog, Göran; Javadov, Namig; Javůrek, Tomáš; Jeanty, Laura; Jejelava, Juansher; Jeng, Geng-yuan; Jennens, David; Jenni, Peter; Jentzsch, Jennifer; Jeske, Carl; Jézéquel, Stéphane; Ji, Haoshuang; Ji, Weina; Jia, Jiangyong; Jiang, Yi; Jimenez Belenguer, Marcos; Jin, Shan; Jinaru, Adam; Jinnouchi, Osamu; Joergensen, Morten Dam; Johansson, Erik; Johansson, Per; Johns, Kenneth; Jon-And, Kerstin; Jones, Graham; Jones, Roger; Jones, Tim; Jongmanns, Jan; Jorge, Pedro; Joshi, Kiran Daniel; Jovicevic, Jelena; Ju, Xiangyang; Jung, Christian; Jungst, Ralph Markus; Jussel, Patrick; Juste Rozas, Aurelio; Kaci, Mohammed; Kaczmarska, Anna; Kado, Marumi; Kagan, Harris; Kagan, Michael; Kajomovitz, Enrique; Kalderon, Charles William; Kama, Sami; Kamenshchikov, Andrey; Kanaya, Naoko; Kaneda, Michiru; Kaneti, Steven; Kantserov, Vadim; Kanzaki, Junichi; Kaplan, Benjamin; Kapliy, Anton; Kar, Deepak; Karakostas, Konstantinos; Karastathis, Nikolaos; Karnevskiy, Mikhail; Karpov, Sergey; Karpova, Zoya; Karthik, Krishnaiyengar; Kartvelishvili, Vakhtang; Karyukhin, Andrey; Kashif, Lashkar; Kasieczka, Gregor; Kass, Richard; Kastanas, Alex; Kataoka, Yousuke; Katre, Akshay; Katzy, Judith; Kaushik, Venkatesh; Kawagoe, Kiyotomo; Kawamoto, Tatsuo; Kawamura, Gen; Kazama, Shingo; Kazanin, Vassili; Kazarinov, Makhail; Keeler, Richard; Kehoe, Robert; Keil, Markus; Keller, John; Kempster, Jacob Julian; Keoshkerian, Houry; Kepka, Oldrich; Kerševan, Borut Paul; Kersten, Susanne; Kessoku, Kohei; Keung, Justin; Khalil-zada, Farkhad; Khandanyan, Hovhannes; Khanov, Alexander; Khodinov, Alexander; Khomich, Andrei; Khoo, Teng Jian; Khoriauli, Gia; Khoroshilov, Andrey; Khovanskiy, Valery; Khramov, Evgeniy; Khubua, Jemal; Kim, Hee Yeun; Kim, Hyeon Jin; Kim, Shinhong; Kimura, Naoki; Kind, Oliver; King, Barry; King, Matthew; King, Robert Steven Beaufoy; King, Samuel Burton; Kirk, Julie; Kiryunin, Andrey; Kishimoto, Tomoe; Kisielewska, Danuta; Kiss, Florian; Kittelmann, Thomas; Kiuchi, Kenji; Kladiva, Eduard; Klein, Max; Klein, Uta; Kleinknecht, Konrad; Klimek, Pawel; Klimentov, Alexei; Klingenberg, Reiner; Klinger, Joel Alexander; Klioutchnikova, Tatiana; Klok, Peter; Kluge, Eike-Erik; Kluit, Peter; Kluth, Stefan; Kneringer, Emmerich; Knoops, Edith; Knue, Andrea; Kobayashi, Dai; Kobayashi, Tomio; Kobel, Michael; Kocian, Martin; Kodys, Peter; Koevesarki, Peter; Koffas, Thomas; Koffeman, Els; Kogan, Lucy Anne; Kohlmann, Simon; Kohout, Zdenek; Kohriki, Takashi; Koi, Tatsumi; Kolanoski, Hermann; Koletsou, Iro; Koll, James; Komar, Aston; Komori, Yuto; Kondo, Takahiko; Kondrashova, Nataliia; Köneke, Karsten; König, Adriaan; König, Sebastian; Kono, Takanori; Konoplich, Rostislav; Konstantinidis, Nikolaos; Kopeliansky, Revital; Koperny, Stefan; Köpke, Lutz; Kopp, Anna Katharina; Korcyl, Krzysztof; Kordas, Kostantinos; Korn, Andreas; Korol, Aleksandr; Korolkov, Ilya; Korolkova, Elena; Korotkov, Vladislav; Kortner, Oliver; Kortner, Sandra; Kostyukhin, Vadim; Kotov, Vladislav; Kotwal, Ashutosh; Kourkoumelis, Christine; Kouskoura, Vasiliki; Koutsman, Alex; Kowalewski, Robert Victor; Kowalski, Tadeusz; Kozanecki, Witold; Kozhin, Anatoly; Kral, Vlastimil; Kramarenko, Viktor; Kramberger, Gregor; Krasnopevtsev, Dimitriy; Krasny, Mieczyslaw Witold; Krasznahorkay, Attila; Kraus, Jana; Kravchenko, Anton; Kreiss, Sven; Kretz, Moritz; Kretzschmar, Jan; Kreutzfeldt, Kristof; Krieger, Peter; Kroeninger, Kevin; Kroha, Hubert; Kroll, Joe; Kroseberg, Juergen; Krstic, Jelena; Kruchonak, Uladzimir; Krüger, Hans; Kruker, Tobias; Krumnack, Nils; Krumshteyn, Zinovii; Kruse, Amanda; Kruse, Mark; Kruskal, Michael; Kubota, Takashi; Kuday, Sinan; Kuehn, Susanne; Kugel, Andreas; Kuhl, Andrew; Kuhl, Thorsten; Kukhtin, Victor; Kulchitsky, Yuri; Kuleshov, Sergey; Kuna, Marine; Kunkle, Joshua; Kupco, Alexander; Kurashige, Hisaya; Kurochkin, Yurii; Kurumida, Rie; Kus, Vlastimil; Kuwertz, Emma Sian; Kuze, Masahiro; Kvita, Jiri; La Rosa, Alessandro; La Rotonda, Laura; Lacasta, Carlos; Lacava, Francesco; Lacey, James; Lacker, Heiko; Lacour, Didier; Lacuesta, Vicente Ramón; Ladygin, Evgueni; Lafaye, Remi; Laforge, Bertrand; Lagouri, Theodota; Lai, Stanley; Laier, Heiko; Lambourne, Luke; Lammers, Sabine; Lampen, Caleb; Lampl, Walter; Lançon, Eric; Landgraf, Ulrich; Landon, Murrough; Lang, Valerie Susanne; Lankford, Andrew; Lanni, Francesco; Lantzsch, Kerstin; Laplace, Sandrine; Lapoire, Cecile; Laporte, Jean-Francois; Lari, Tommaso; Lassnig, Mario; Laurelli, Paolo; Lavrijsen, Wim; Law, Alexander; Laycock, Paul; Le, Bao Tran; Le Dortz, Olivier; Le Guirriec, Emmanuel; Le Menedeu, Eve; LeCompte, Thomas; Ledroit-Guillon, Fabienne Agnes Marie; Lee, Claire, Alexandra; Lee, Hurng-Chun; Lee, Jason; Lee, Shih-Chang; Lee, Lawrence; Lefebvre, Guillaume; Lefebvre, Michel; Legger, Federica; Leggett, Charles; Lehan, Allan; Lehmacher, Marc; Lehmann Miotto, Giovanna; Lei, Xiaowen; Leight, William Axel; Leisos, Antonios; Leister, Andrew Gerard; Leite, Marco Aurelio Lisboa; Leitner, Rupert; Lellouch, Daniel; Lemmer, Boris; Leney, Katharine; Lenz, Tatjana; Lenzen, Georg; Lenzi, Bruno; Leone, Robert; Leone, Sandra; Leonhardt, Kathrin; Leonidopoulos, Christos; Leontsinis, Stefanos; Leroy, Claude; Lester, Christopher; Lester, Christopher Michael; Levchenko, Mikhail; Levêque, Jessica; Levin, Daniel; Levinson, Lorne; Levy, Mark; Lewis, Adrian; Lewis, George; Leyko, Agnieszka; Leyton, Michael; Li, Bing; Li, Bo; Li, Haifeng; Li, Ho Ling; Li, Lei; Li, Liang; Li, Shu; Li, Yichen; Liang, Zhijun; Liao, Hongbo; Liberti, Barbara; Lichard, Peter; Lie, Ki; Liebal, Jessica; Liebig, Wolfgang; Limbach, Christian; Limosani, Antonio; Lin, Simon; Lin, Tai-Hua; Linde, Frank; Lindquist, Brian Edward; Linnemann, James; Lipeles, Elliot; Lipniacka, Anna; Lisovyi, Mykhailo; Liss, Tony; Lissauer, David; Lister, Alison; Litke, Alan; Liu, Bo; Liu, Dong; Liu, Jianbei; Liu, Kun; Liu, Lulu; Liu, Miaoyuan; Liu, Minghui; Liu, Yanwen; Livan, Michele; Livermore, Sarah; Lleres, Annick; Llorente Merino, Javier; Lloyd, Stephen; Lo Sterzo, Francesco; Lobodzinska, Ewelina; Loch, Peter; Lockman, William; Loddenkoetter, Thomas; Loebinger, Fred; Loevschall-Jensen, Ask Emil; Loginov, Andrey; Loh, Chang Wei; Lohse, Thomas; Lohwasser, Kristin; Lokajicek, Milos; Lombardo, Vincenzo Paolo; Long, Brian Alexander; Long, Jonathan; Long, Robin Eamonn; Lopes, Lourenco; Lopez Mateos, David; Lopez Paredes, Brais; Lopez Paz, Ivan; Lorenz, Jeanette; Lorenzo Martinez, Narei; Losada, Marta; Loscutoff, Peter; Lou, XinChou; Lounis, Abdenour; Love, Jeremy; Love, Peter; Lowe, Andrew; Lu, Feng; Lubatti, Henry; Luci, Claudio; Lucotte, Arnaud; Luehring, Frederick; Lukas, Wolfgang; Luminari, Lamberto; Lundberg, Olof; Lund-Jensen, Bengt; Lungwitz, Matthias; Lynn, David; Lysak, Roman; Lytken, Else; Ma, Hong; Ma, Lian Liang; Maccarrone, Giovanni; Macchiolo, Anna; Machado Miguens, Joana; Macina, Daniela; Madaffari, Daniele; Madar, Romain; Maddocks, Harvey Jonathan; Mader, Wolfgang; Madsen, Alexander; Maeno, Mayuko; Maeno, Tadashi; Magradze, Erekle; Mahboubi, Kambiz; Mahlstedt, Joern; Mahmoud, Sara; Maiani, Camilla; Maidantchik, Carmen; Maier, Andreas Alexander; Maio, Amélia; Majewski, Stephanie; Makida, Yasuhiro; Makovec, Nikola; Mal, Prolay; Malaescu, Bogdan; Malecki, Pawel; Maleev, Victor; Malek, Fairouz; Mallik, Usha; Malon, David; Malone, Caitlin; Maltezos, Stavros; Malyshev, Vladimir; Malyukov, Sergei; Mamuzic, Judita; Mandelli, Beatrice; Mandelli, Luciano; Mandić, Igor; Mandrysch, Rocco; Maneira, José; Manfredini, Alessandro; Manhaes de Andrade Filho, Luciano; Manjarres Ramos, Joany Andreina; Mann, Alexander; Manning, Peter; Manousakis-Katsikakis, Arkadios; Mansoulie, Bruno; Mantifel, Rodger; Mapelli, Livio; March, Luis; Marchand, Jean-Francois; Marchiori, Giovanni; Marcisovsky, Michal; Marino, Christopher; Marjanovic, Marija; Marques, Carlos; Marroquim, Fernando; Marsden, Stephen Philip; Marshall, Zach; Marti, Lukas Fritz; Marti-Garcia, Salvador; Martin, Brian; Martin, Brian; Martin, Tim; Martin, Victoria Jane; Martin dit Latour, Bertrand; Martinez, Homero; Martinez, Mario; Martin-Haugh, Stewart; Martyniuk, Alex; Marx, Marilyn; Marzano, Francesco; Marzin, Antoine; Masetti, Lucia; Mashimo, Tetsuro; Mashinistov, Ruslan; Masik, Jiri; Maslennikov, Alexey; Massa, Ignazio; Massol, Nicolas; Mastrandrea, Paolo; Mastroberardino, Anna; Masubuchi, Tatsuya; Mättig, Peter; Mattmann, Johannes; Maurer, Julien; Maxfield, Stephen; Maximov, Dmitriy; Mazini, Rachid; Mazzaferro, Luca; Mc Goldrick, Garrin; Mc Kee, Shawn Patrick; McCarn, Allison; McCarthy, Robert; McCarthy, Tom; McCubbin, Norman; McFarlane, Kenneth; Mcfayden, Josh; Mchedlidze, Gvantsa; McMahon, Steve; McPherson, Robert; Meade, Andrew; Mechnich, Joerg; Medinnis, Michael; Meehan, Samuel; Mehlhase, Sascha; Mehta, Andrew; Meier, Karlheinz; Meineck, Christian; Meirose, Bernhard; Melachrinos, Constantinos; Mellado Garcia, Bruce Rafael; Meloni, Federico; Mengarelli, Alberto; Menke, Sven; Meoni, Evelin; Mercurio, Kevin Michael; Mergelmeyer, Sebastian; Meric, Nicolas; Mermod, Philippe; Merola, Leonardo; Meroni, Chiara; Merritt, Frank; Merritt, Hayes; Messina, Andrea; Metcalfe, Jessica; Mete, Alaettin Serhan; Meyer, Carsten; Meyer, Christopher; Meyer, Jean-Pierre; Meyer, Jochen; Middleton, Robin; Migas, Sylwia; Mijović, Liza; Mikenberg, Giora; Mikestikova, Marcela; Mikuž, Marko; Milic, Adriana; Miller, David; Mills, Corrinne; Milov, Alexander; Milstead, David; Milstein, Dmitry; Minaenko, Andrey; Minashvili, Irakli; Mincer, Allen; Mindur, Bartosz; Mineev, Mikhail; Ming, Yao; Mir, Lluisa-Maria; Mirabelli, Giovanni; Mitani, Takashi; Mitrevski, Jovan; Mitsou, Vasiliki A; Mitsui, Shingo; Miucci, Antonio; Miyagawa, Paul; Mjörnmark, Jan-Ulf; Moa, Torbjoern; Mochizuki, Kazuya; Mohapatra, Soumya; Mohr, Wolfgang; Molander, Simon; Moles-Valls, Regina; Mönig, Klaus; Monini, Caterina; Monk, James; Monnier, Emmanuel; Montejo Berlingen, Javier; Monticelli, Fernando; Monzani, Simone; Moore, Roger; Moraes, Arthur; Morange, Nicolas; Moreno, Deywis; Moreno Llácer, María; Morettini, Paolo; Morgenstern, Marcus; Morii, Masahiro; Moritz, Sebastian; Morley, Anthony Keith; Mornacchi, Giuseppe; Morris, John; Morvaj, Ljiljana; Moser, Hans-Guenther; Mosidze, Maia; Moss, Josh; Motohashi, Kazuki; Mount, Richard; Mountricha, Eleni; Mouraviev, Sergei; Moyse, Edward; Muanza, Steve; Mudd, Richard; Mueller, Felix; Mueller, James; Mueller, Klemens; Mueller, Thibaut; Mueller, Timo; Muenstermann, Daniel; Munwes, Yonathan; Murillo Quijada, Javier Alberto; Murray, Bill; Musheghyan, Haykuhi; Musto, Elisa; Myagkov, Alexey; Myska, Miroslav; Nackenhorst, Olaf; Nadal, Jordi; Nagai, Koichi; Nagai, Ryo; Nagai, Yoshikazu; Nagano, Kunihiro; Nagarkar, Advait; Nagasaka, Yasushi; Nagel, Martin; Nairz, Armin Michael; Nakahama, Yu; Nakamura, Koji; Nakamura, Tomoaki; Nakano, Itsuo; Namasivayam, Harisankar; Nanava, Gizo; Narayan, Rohin; Nattermann, Till; Naumann, Thomas; Navarro, Gabriela; Nayyar, Ruchika; Neal, Homer; Nechaeva, Polina; Neep, Thomas James; Nef, Pascal Daniel; Negri, Andrea; Negri, Guido; Negrini, Matteo; Nektarijevic, Snezana; Nelson, Andrew; Nelson, Timothy Knight; Nemecek, Stanislav; Nemethy, Peter; Nepomuceno, Andre Asevedo; Nessi, Marzio; Neubauer, Mark; Neumann, Manuel; Neves, Ricardo; Nevski, Pavel; Newman, Paul; Nguyen, Duong Hai; Nickerson, Richard; Nicolaidou, Rosy; Nicquevert, Bertrand; Nielsen, Jason; Nikiforou, Nikiforos; Nikiforov, Andriy; Nikolaenko, Vladimir; Nikolic-Audit, Irena; Nikolics, Katalin; Nikolopoulos, Konstantinos; Nilsson, Paul; Ninomiya, Yoichi; Nisati, Aleandro; Nisius, Richard; Nobe, Takuya; Nodulman, Lawrence; Nomachi, Masaharu; Nomidis, Ioannis; Norberg, Scarlet; Nordberg, Markus; Novgorodova, Olga; Nowak, Sebastian; Nozaki, Mitsuaki; Nozka, Libor; Ntekas, Konstantinos; Nunes Hanninger, Guilherme; Nunnemann, Thomas; Nurse, Emily; Nuti, Francesco; O'Brien, Brendan Joseph; O'grady, Fionnbarr; O'Neil, Dugan; O'Shea, Val; Oakham, Gerald; Oberlack, Horst; Obermann, Theresa; Ocariz, Jose; Ochi, Atsuhiko; Ochoa, Ines; Oda, Susumu; Odaka, Shigeru; Ogren, Harold; Oh, Alexander; Oh, Seog; Ohm, Christian; Ohman, Henrik; Ohshima, Takayoshi; Okamura, Wataru; Okawa, Hideki; Okumura, Yasuyuki; Okuyama, Toyonobu; Olariu, Albert; Olchevski, Alexander; Olivares Pino, Sebastian Andres; Oliveira Damazio, Denis; Oliver Garcia, Elena; Olszewski, Andrzej; Olszowska, Jolanta; Onofre, António; Onyisi, Peter; Oram, Christopher; Oreglia, Mark; Oren, Yona; Orestano, Domizia; Orlando, Nicola; Oropeza Barrera, Cristina; Orr, Robert; Osculati, Bianca; Ospanov, Rustem; Otero y Garzon, Gustavo; Otono, Hidetoshi; Ouchrif, Mohamed; Ouellette, Eric; Ould-Saada, Farid; Ouraou, Ahmimed; Oussoren, Koen Pieter; Ouyang, Qun; Ovcharova, Ana; Owen, Mark; Ozcan, Veysi Erkcan; Ozturk, Nurcan; Pachal, Katherine; Pacheco Pages, Andres; Padilla Aranda, Cristobal; Pagáčová, Martina; Pagan Griso, Simone; Paganis, Efstathios; Pahl, Christoph; Paige, Frank; Pais, Preema; Pajchel, Katarina; Palacino, Gabriel; Palestini, Sandro; Palka, Marek; Pallin, Dominique; Palma, Alberto; Palmer, Jody; Pan, Yibin; Panagiotopoulou, Evgenia; Panduro Vazquez, William; Pani, Priscilla; Panikashvili, Natalia; Panitkin, Sergey; Pantea, Dan; Paolozzi, Lorenzo; Papadopoulou, Theodora; Papageorgiou, Konstantinos; Paramonov, Alexander; Paredes Hernandez, Daniela; Parker, Michael Andrew; Parodi, Fabrizio; Parsons, John; Parzefall, Ulrich; Pasqualucci, Enrico; Passaggio, Stefano; Passeri, Antonio; Pastore, Fernanda; Pastore, Francesca; Pásztor, Gabriella; Pataraia, Sophio; Patel, Nikhul; Pater, Joleen; Patricelli, Sergio; Pauly, Thilo; Pearce, James; Pedersen, Maiken; Pedraza Lopez, Sebastian; Pedro, Rute; Peleganchuk, Sergey; Pelikan, Daniel; Peng, Haiping; Penning, Bjoern; Penwell, John; Perepelitsa, Dennis; Perez Codina, Estel; Pérez García-Estañ, María Teresa; Perez Reale, Valeria; Perini, Laura; Pernegger, Heinz; Perrino, Roberto; Peschke, Richard; Peshekhonov, Vladimir; Peters, Krisztian; Peters, Yvonne; Petersen, Brian; Petersen, Troels; Petit, Elisabeth; Petridis, Andreas; Petridou, Chariclia; Petrolo, Emilio; Petrucci, Fabrizio; Pettersson, Nora Emilia; Pezoa, Raquel; Phillips, Peter William; Piacquadio, Giacinto; Pianori, Elisabetta; Picazio, Attilio; Piccaro, Elisa; Piccinini, Maurizio; Piegaia, Ricardo; Pignotti, David; Pilcher, James; Pilkington, Andrew; Pina, João Antonio; Pinamonti, Michele; Pinder, Alex; Pinfold, James; Pingel, Almut; Pinto, Belmiro; Pires, Sylvestre; Pitt, Michael; Pizio, Caterina; Plazak, Lukas; Pleier, Marc-Andre; Pleskot, Vojtech; Plotnikova, Elena; Plucinski, Pawel; Poddar, Sahill; Podlyski, Fabrice; Poettgen, Ruth; Poggioli, Luc; Pohl, David-leon; Pohl, Martin; Polesello, Giacomo; Policicchio, Antonio; Polifka, Richard; Polini, Alessandro; Pollard, Christopher Samuel; Polychronakos, Venetios; Pommès, Kathy; Pontecorvo, Ludovico; Pope, Bernard; Popeneciu, Gabriel Alexandru; Popovic, Dragan; Poppleton, Alan; Portell Bueso, Xavier; Pospisil, Stanislav; Potamianos, Karolos; Potrap, Igor; Potter, Christina; Potter, Christopher; Poulard, Gilbert; Poveda, Joaquin; Pozdnyakov, Valery; Pralavorio, Pascal; Pranko, Aliaksandr; Prasad, Srivas; Pravahan, Rishiraj; Prell, Soeren; Price, Darren; Price, Joe; Price, Lawrence; Prieur, Damien; Primavera, Margherita; Proissl, Manuel; Prokofiev, Kirill; Prokoshin, Fedor; Protopapadaki, Eftychia-sofia; Protopopescu, Serban; Proudfoot, James; Przybycien, Mariusz; Przysiezniak, Helenka; Ptacek, Elizabeth; Puddu, Daniele; Pueschel, Elisa; Puldon, David; Purohit, Milind; Puzo, Patrick; Qian, Jianming; Qin, Gang; Qin, Yang; Quadt, Arnulf; Quarrie, David; Quayle, William; Queitsch-Maitland, Michaela; Quilty, Donnchadha; Qureshi, Anum; Radeka, Veljko; Radescu, Voica; Radhakrishnan, Sooraj Krishnan; Radloff, Peter; Rados, Pere; Ragusa, Francesco; Rahal, Ghita; Rajagopalan, Srinivasan; Rammensee, Michael; Randle-Conde, Aidan Sean; Rangel-Smith, Camila; Rao, Kanury; Rauscher, Felix; Rave, Tobias Christian; Ravenscroft, Thomas; Raymond, Michel; Read, Alexander Lincoln; Readioff, Nathan Peter; Rebuzzi, Daniela; Redelbach, Andreas; Redlinger, George; Reece, Ryan; Reeves, Kendall; Rehnisch, Laura; Reisin, Hernan; Relich, Matthew; Rembser, Christoph; Ren, Huan; Ren, Zhongliang; Renaud, Adrien; Rescigno, Marco; Resconi, Silvia; Rezanova, Olga; Reznicek, Pavel; Rezvani, Reyhaneh; Richter, Robert; Ridel, Melissa; Rieck, Patrick; Rieger, Julia; Rijssenbeek, Michael; Rimoldi, Adele; Rinaldi, Lorenzo; Ritsch, Elmar; Riu, Imma; Rizatdinova, Flera; Rizvi, Eram; Robertson, Steven; Robichaud-Veronneau, Andree; Robinson, Dave; Robinson, James; Robson, Aidan; Roda, Chiara; Rodrigues, Luis; Roe, Shaun; Røhne, Ole; Rolli, Simona; Romaniouk, Anatoli; Romano, Marino; Romero Adam, Elena; Rompotis, Nikolaos; Roos, Lydia; Ros, Eduardo; Rosati, Stefano; Rosbach, Kilian; Rose, Matthew; Rosendahl, Peter Lundgaard; Rosenthal, Oliver; Rossetti, Valerio; Rossi, Elvira; Rossi, Leonardo Paolo; Rosten, Rachel; Rotaru, Marina; Roth, Itamar; Rothberg, Joseph; Rousseau, David; Royon, Christophe; Rozanov, Alexandre; Rozen, Yoram; Ruan, Xifeng; Rubbo, Francesco; Rubinskiy, Igor; Rud, Viacheslav; Rudolph, Christian; Rudolph, Matthew Scott; Rühr, Frederik; Ruiz-Martinez, Aranzazu; Rurikova, Zuzana; Rusakovich, Nikolai; Ruschke, Alexander; Rutherfoord, John; Ruthmann, Nils; Ryabov, Yury; Rybar, Martin; Rybkin, Grigori; Ryder, Nick; Saavedra, Aldo; Sacerdoti, Sabrina; Saddique, Asif; Sadeh, Iftach; Sadrozinski, Hartmut; Sadykov, Renat; Safai Tehrani, Francesco; Sakamoto, Hiroshi; Sakurai, Yuki; Salamanna, Giuseppe; Salamon, Andrea; Saleem, Muhammad; Salek, David; Sales De Bruin, Pedro Henrique; Salihagic, Denis; Salnikov, Andrei; Salt, José; Salvachua Ferrando, Belén; Salvatore, Daniela; Salvatore, Pasquale Fabrizio; Salvucci, Antonio; Salzburger, Andreas; Sampsonidis, Dimitrios; Sanchez, Arturo; Sánchez, Javier; Sanchez Martinez, Victoria; Sandaker, Heidi; Sandbach, Ruth Laura; Sander, Heinz Georg; Sanders, Michiel; Sandhoff, Marisa; Sandoval, Tanya; Sandoval, Carlos; Sandstroem, Rikard; Sankey, Dave; Sansoni, Andrea; Santoni, Claudio; Santonico, Rinaldo; Santos, Helena; Santoyo Castillo, Itzebelt; Sapp, Kevin; Sapronov, Andrey; Saraiva, João; Sarrazin, Bjorn; Sartisohn, Georg; Sasaki, Osamu; Sasaki, Yuichi; Sauvage, Gilles; Sauvan, Emmanuel; Savard, Pierre; Savu, Dan Octavian; Sawyer, Craig; Sawyer, Lee; Saxon, David; Saxon, James; Sbarra, Carla; Sbrizzi, Antonio; Scanlon, Tim; Scannicchio, Diana; Scarcella, Mark; Scarfone, Valerio; Schaarschmidt, Jana; Schacht, Peter; Schaefer, Douglas; Schaefer, Ralph; Schaepe, Steffen; Schaetzel, Sebastian; Schäfer, Uli; Schaffer, Arthur; Schaile, Dorothee; Schamberger, R. Dean; Scharf, Veit; Schegelsky, Valery; Scheirich, Daniel; Schernau, Michael; Scherzer, Max; Schiavi, Carlo; Schieck, Jochen; Schillo, Christian; Schioppa, Marco; Schlenker, Stefan; Schmidt, Evelyn; Schmieden, Kristof; Schmitt, Christian; Schmitt, Christopher; Schmitt, Sebastian; Schneider, Basil; Schnellbach, Yan Jie; Schnoor, Ulrike; Schoeffel, Laurent; Schoening, Andre; Schoenrock, Bradley Daniel; Schorlemmer, Andre Lukas; Schott, Matthias; Schouten, Doug; Schovancova, Jaroslava; Schramm, Steven; Schreyer, Manuel; Schroeder, Christian; Schuh, Natascha; Schultens, Martin Johannes; Schultz-Coulon, Hans-Christian; Schulz, Holger; Schumacher, Markus; Schumm, Bruce; Schune, Philippe; Schwanenberger, Christian; Schwartzman, Ariel; Schwegler, Philipp; Schwemling, Philippe; Schwienhorst, Reinhard; Schwindling, Jerome; Schwindt, Thomas; Schwoerer, Maud; Sciacca, Gianfranco; Scifo, Estelle; Sciolla, Gabriella; Scott, Bill; Scuri, Fabrizio; Scutti, Federico; Searcy, Jacob; Sedov, George; Sedykh, Evgeny; Seidel, Sally; Seiden, Abraham; Seifert, Frank; Seixas, José; Sekhniaidze, Givi; Sekula, Stephen; Selbach, Karoline Elfriede; Seliverstov, Dmitry; Sellers, Graham; Semprini-Cesari, Nicola; Serfon, Cedric; Serin, Laurent; Serkin, Leonid; Serre, Thomas; Seuster, Rolf; Severini, Horst; Sfiligoj, Tina; Sforza, Federico; Sfyrla, Anna; Shabalina, Elizaveta; Shamim, Mansoora; Shan, Lianyou; Shang, Ruo-yu; Shank, James; Shapiro, Marjorie; Shatalov, Pavel; Shaw, Kate; Shehu, Ciwake Yusufu; Sherwood, Peter; Shi, Liaoshan; Shimizu, Shima; Shimmin, Chase Owen; Shimojima, Makoto; Shiyakova, Mariya; Shmeleva, Alevtina; Shochet, Mel; Short, Daniel; Shrestha, Suyog; Shulga, Evgeny; Shupe, Michael; Shushkevich, Stanislav; Sicho, Petr; Sidiropoulou, Ourania; Sidorov, Dmitri; Sidoti, Antonio; Siegert, Frank; Sijacki, Djordje; Silva, José; Silver, Yiftah; Silverstein, Daniel; Silverstein, Samuel; Simak, Vladislav; Simard, Olivier; Simic, Ljiljana; Simion, Stefan; Simioni, Eduard; Simmons, Brinick; Simoniello, Rosa; Simonyan, Margar; Sinervo, Pekka; Sinev, Nikolai; Sipica, Valentin; Siragusa, Giovanni; Sircar, Anirvan; Sisakyan, Alexei; Sivoklokov, Serguei; Sjölin, Jörgen; Sjursen, Therese; Skottowe, Hugh Philip; Skovpen, Kirill; Skubic, Patrick; Slater, Mark; Slavicek, Tomas; Sliwa, Krzysztof; Smakhtin, Vladimir; Smart, Ben; Smestad, Lillian; Smirnov, Sergei; Smirnov, Yury; Smirnova, Lidia; Smirnova, Oxana; Smith, Kenway; Smizanska, Maria; Smolek, Karel; Snesarev, Andrei; Snidero, Giacomo; Snyder, Scott; Sobie, Randall; Socher, Felix; Soffer, Abner; Soh, Dart-yin; Solans, Carlos; Solar, Michael; Solc, Jaroslav; Soldatov, Evgeny; Soldevila, Urmila; Solfaroli Camillocci, Elena; Solodkov, Alexander; Soloshenko, Alexei; Solovyanov, Oleg; Solovyev, Victor; Sommer, Philip; Song, Hong Ye; Soni, Nitesh; Sood, Alexander; Sopczak, Andre; Sopko, Bruno; Sopko, Vit; Sorin, Veronica; Sosebee, Mark; Soualah, Rachik; Soueid, Paul; Soukharev, Andrey; South, David; Spagnolo, Stefania; Spanò, Francesco; Spearman, William Robert; Spettel, Fabian; Spighi, Roberto; Spigo, Giancarlo; Spousta, Martin; Spreitzer, Teresa; Spurlock, Barry; St Denis, Richard Dante; Staerz, Steffen; Stahlman, Jonathan; Stamen, Rainer; Stanecka, Ewa; Stanek, Robert; Stanescu, Cristian; Stanescu-Bellu, Madalina; Stanitzki, Marcel Michael; Stapnes, Steinar; Starchenko, Evgeny; Stark, Jan; Staroba, Pavel; Starovoitov, Pavel; Staszewski, Rafal; Stavina, Pavel; Steinberg, Peter; Stelzer, Bernd; Stelzer, Harald Joerg; Stelzer-Chilton, Oliver; Stenzel, Hasko; Stern, Sebastian; Stewart, Graeme; Stillings, Jan Andre; Stockton, Mark; Stoebe, Michael; Stoicea, Gabriel; Stolte, Philipp; Stonjek, Stefan; Stradling, Alden; Straessner, Arno; Stramaglia, Maria Elena; Strandberg, Jonas; Strandberg, Sara; Strandlie, Are; Strauss, Emanuel; Strauss, Michael; Strizenec, Pavol; Ströhmer, Raimund; Strom, David; Stroynowski, Ryszard; Stucci, Stefania Antonia; Stugu, Bjarne; Styles, Nicholas Adam; Su, Dong; Su, Jun; Subramania, Halasya Siva; Subramaniam, Rajivalochan; Succurro, Antonella; Sugaya, Yorihito; Suhr, Chad; Suk, Michal; Sulin, Vladimir; Sultansoy, Saleh; Sumida, Toshi; Sun, Xiaohu; Sundermann, Jan Erik; Suruliz, Kerim; Susinno, Giancarlo; Sutton, Mark; Suzuki, Yu; Svatos, Michal; Swedish, Stephen; Swiatlowski, Maximilian; Sykora, Ivan; Sykora, Tomas; Ta, Duc; Taccini, Cecilia; Tackmann, Kerstin; Taenzer, Joe; Taffard, Anyes; Tafirout, Reda; Taiblum, Nimrod; Takahashi, Yuta; Takai, Helio; Takashima, Ryuichi; Takeda, Hiroshi; Takeshita, Tohru; Takubo, Yosuke; Talby, Mossadek; Talyshev, Alexey; Tam, Jason; Tan, Kong Guan; Tanaka, Junichi; Tanaka, Reisaburo; Tanaka, Satoshi; Tanaka, Shuji; Tanasijczuk, Andres Jorge; Tannenwald, Benjamin Bordy; Tannoury, Nancy; Tapprogge, Stefan; Tarem, Shlomit; Tarrade, Fabien; Tartarelli, Giuseppe Francesco; Tas, Petr; Tasevsky, Marek; Tashiro, Takuya; Tassi, Enrico; Tavares Delgado, Ademar; Tayalati, Yahya; Taylor, Frank; Taylor, Geoffrey; Taylor, Wendy; Teischinger, Florian Alfred; Teixeira Dias Castanheira, Matilde; Teixeira-Dias, Pedro; Temming, Kim Katrin; Ten Kate, Herman; Teng, Ping-Kun; Teoh, Jia Jian; Terada, Susumu; Terashi, Koji; Terron, Juan; Terzo, Stefano; Testa, Marianna; Teuscher, Richard; Therhaag, Jan; Theveneaux-Pelzer, Timothée; Thomas, Juergen; Thomas-Wilsker, Joshuha; Thompson, Emily; Thompson, Paul; Thompson, Peter; Thompson, Stan; Thomsen, Lotte Ansgaard; Thomson, Evelyn; Thomson, Mark; Thong, Wai Meng; Thun, Rudolf; Tian, Feng; Tibbetts, Mark James; Tikhomirov, Vladimir; Tikhonov, Yury; Timoshenko, Sergey; Tiouchichine, Elodie; Tipton, Paul; Tisserant, Sylvain; Todorov, Theodore; Todorova-Nova, Sharka; Toggerson, Brokk; Tojo, Junji; Tokár, Stanislav; Tokushuku, Katsuo; Tollefson, Kirsten; Tomlinson, Lee; Tomoto, Makoto; Tompkins, Lauren; Toms, Konstantin; Topilin, Nikolai; Torrence, Eric; Torres, Heberth; Torró Pastor, Emma; Toth, Jozsef; Touchard, Francois; Tovey, Daniel; Tran, Huong Lan; Trefzger, Thomas; Tremblet, Louis; Tricoli, Alessandro; Trigger, Isabel Marian; Trincaz-Duvoid, Sophie; Tripiana, Martin; Triplett, Nathan; Trischuk, William; Trocmé, Benjamin; Troncon, Clara; Trottier-McDonald, Michel; Trovatelli, Monica; True, Patrick; Trzebinski, Maciej; Trzupek, Adam; Tsarouchas, Charilaos; Tseng, Jeffrey; Tsiareshka, Pavel; Tsionou, Dimitra; Tsipolitis, Georgios; Tsirintanis, Nikolaos; Tsiskaridze, Shota; Tsiskaridze, Vakhtang; Tskhadadze, Edisher; Tsukerman, Ilya; Tsulaia, Vakhtang; Tsuno, Soshi; Tsybychev, Dmitri; Tudorache, Alexandra; Tudorache, Valentina; Tuna, Alexander Naip; Tupputi, Salvatore; Turchikhin, Semen; Turecek, Daniel; Turk Cakir, Ilkay; Turra, Ruggero; Tuts, Michael; Tykhonov, Andrii; Tylmad, Maja; Tyndel, Mike; Uchida, Kirika; Ueda, Ikuo; Ueno, Ryuichi; Ughetto, Michael; Ugland, Maren; Uhlenbrock, Mathias; Ukegawa, Fumihiko; Unal, Guillaume; Undrus, Alexander; Unel, Gokhan; Ungaro, Francesca; Unno, Yoshinobu; Urbaniec, Dustin; Urquijo, Phillip; Usai, Giulio; Usanova, Anna; Vacavant, Laurent; Vacek, Vaclav; Vachon, Brigitte; Valencic, Nika; Valentinetti, Sara; Valero, Alberto; Valery, Loic; Valkar, Stefan; Valladolid Gallego, Eva; Vallecorsa, Sofia; Valls Ferrer, Juan Antonio; Van Den Wollenberg, Wouter; Van Der Deijl, Pieter; van der Geer, Rogier; van der Graaf, Harry; Van Der Leeuw, Robin; van der Ster, Daniel; van Eldik, Niels; van Gemmeren, Peter; Van Nieuwkoop, Jacobus; van Vulpen, Ivo; van Woerden, Marius Cornelis; Vanadia, Marco; Vandelli, Wainer; Vanguri, Rami; Vaniachine, Alexandre; Vankov, Peter; Vannucci, Francois; Vardanyan, Gagik; Vari, Riccardo; Varnes, Erich; Varol, Tulin; Varouchas, Dimitris; Vartapetian, Armen; Varvell, Kevin; Vazeille, Francois; Vazquez Schroeder, Tamara; Veatch, Jason; Veloso, Filipe; Veneziano, Stefano; Ventura, Andrea; Ventura, Daniel; Venturi, Manuela; Venturi, Nicola; Venturini, Alessio; Vercesi, Valerio; Verducci, Monica; Verkerke, Wouter; Vermeulen, Jos; Vest, Anja; Vetterli, Michel; Viazlo, Oleksandr; Vichou, Irene; Vickey, Trevor; Vickey Boeriu, Oana Elena; Viehhauser, Georg; Viel, Simon; Vigne, Ralph; Villa, Mauro; Villaplana Perez, Miguel; Vilucchi, Elisabetta; Vincter, Manuella; Vinogradov, Vladimir; Virzi, Joseph; Vivarelli, Iacopo; Vives Vaque, Francesc; Vlachos, Sotirios; Vladoiu, Dan; Vlasak, Michal; Vogel, Adrian; Vogel, Marcelo; Vokac, Petr; Volpi, Guido; Volpi, Matteo; von der Schmitt, Hans; von Radziewski, Holger; von Toerne, Eckhard; Vorobel, Vit; Vorobev, Konstantin; Vos, Marcel; Voss, Rudiger; Vossebeld, Joost; Vranjes, Nenad; Vranjes Milosavljevic, Marija; Vrba, Vaclav; Vreeswijk, Marcel; Vu Anh, Tuan; Vuillermet, Raphael; Vukotic, Ilija; Vykydal, Zdenek; Wagner, Peter; Wagner, Wolfgang; Wahlberg, Hernan; Wahrmund, Sebastian; Wakabayashi, Jun; Walder, James; Walker, Rodney; Walkowiak, Wolfgang; Wall, Richard; Waller, Peter; Walsh, Brian; Wang, Chao; Wang, Chiho; Wang, Fuquan; Wang, Haichen; Wang, Hulin; Wang, Jike; Wang, Jin; Wang, Kuhan; Wang, Rui; Wang, Song-Ming; Wang, Tan; Wang, Xiaoxiao; Wanotayaroj, Chaowaroj; Warburton, Andreas; Ward, Patricia; Wardrope, David Robert; Warsinsky, Markus; Washbrook, Andrew; Wasicki, Christoph; Watkins, Peter; Watson, Alan; Watson, Ian; Watson, Miriam; Watts, Gordon; Watts, Stephen; Waugh, Ben; Webb, Samuel; Weber, Michele; Weber, Stefan Wolf; Webster, Jordan S; Weidberg, Anthony; Weigell, Philipp; Weinert, Benjamin; Weingarten, Jens; Weiser, Christian; Weits, Hartger; Wells, Phillippa; Wenaus, Torre; Wendland, Dennis; Weng, Zhili; Wengler, Thorsten; Wenig, Siegfried; Wermes, Norbert; Werner, Matthias; Werner, Per; Wessels, Martin; Wetter, Jeffrey; Whalen, Kathleen; White, Andrew; White, Martin; White, Ryan; White, Sebastian; Whiteson, Daniel; Wicke, Daniel; Wickens, Fred; Wiedenmann, Werner; Wielers, Monika; Wienemann, Peter; Wiglesworth, Craig; Wiik-Fuchs, Liv Antje Mari; Wijeratne, Peter Alexander; Wildauer, Andreas; Wildt, Martin Andre; Wilkens, Henric George; Will, Jonas Zacharias; Williams, Hugh; Williams, Sarah; Willis, Christopher; Willocq, Stephane; Wilson, Alan; Wilson, John; Wingerter-Seez, Isabelle; Winklmeier, Frank; Winter, Benedict Tobias; Wittgen, Matthias; Wittig, Tobias; Wittkowski, Josephine; Wollstadt, Simon Jakob; Wolter, Marcin Wladyslaw; Wolters, Helmut; Wosiek, Barbara; Wotschack, Jorg; Woudstra, Martin; Wozniak, Krzysztof; Wright, Michael; Wu, Mengqing; Wu, Sau Lan; Wu, Xin; Wu, Yusheng; Wulf, Evan; Wyatt, Terry Richard; Wynne, Benjamin; Xella, Stefania; Xiao, Meng; Xu, Da; Xu, Lailin; Yabsley, Bruce; Yacoob, Sahal; Yamada, Miho; Yamaguchi, Hiroshi; Yamaguchi, Yohei; Yamamoto, Akira; Yamamoto, Kyoko; Yamamoto, Shimpei; Yamamura, Taiki; Yamanaka, Takashi; Yamauchi, Katsuya; Yamazaki, Yuji; Yan, Zhen; Yang, Haijun; Yang, Hongtao; Yang, Un-Ki; Yang, Yi; Yanush, Serguei; Yao, Liwen; Yao, Weiming; Yasu, Yoshiji; Yatsenko, Elena; Yau Wong, Kaven Henry; Ye, Jingbo; Ye, Shuwei; Yen, Andy L; Yildirim, Eda; Yilmaz, Metin; Yoosoofmiya, Reza; Yorita, Kohei; Yoshida, Rikutaro; Yoshihara, Keisuke; Young, Charles; Young, Christopher John; Youssef, Saul; Yu, David Ren-Hwa; Yu, Jaehoon; Yu, Jiaming; Yu, Jie; Yuan, Li; Yurkewicz, Adam; Yusuff, Imran; Zabinski, Bartlomiej; Zaidan, Remi; Zaitsev, Alexander; Zaman, Aungshuman; Zambito, Stefano; Zanello, Lucia; Zanzi, Daniele; Zeitnitz, Christian; Zeman, Martin; Zemla, Andrzej; Zengel, Keith; Zenin, Oleg; Ženiš, Tibor; Zerwas, Dirk; Zevi della Porta, Giovanni; Zhang, Dongliang; Zhang, Fangzhou; Zhang, Huaqiao; Zhang, Jinlong; Zhang, Lei; Zhang, Xueyao; Zhang, Zhiqing; Zhao, Zhengguo; Zhemchugov, Alexey; Zhong, Jiahang; Zhou, Bing; Zhou, Lei; Zhou, Ning; Zhu, Cheng Guang; Zhu, Hongbo; Zhu, Junjie; Zhu, Yingchun; Zhuang, Xuai; Zhukov, Konstantin; Zibell, Andre; Zieminska, Daria; Zimine, Nikolai; Zimmermann, Christoph; Zimmermann, Robert; Zimmermann, Simone; Zimmermann, Stephanie; Zinonos, Zinonas; Ziolkowski, Michael; Zobernig, Georg; Zoccoli, Antonio; zur Nedden, Martin; Zurzolo, Giovanni; Zutshi, Vishnu; Zwalinski, Lukasz

    2014-01-01

    A novel technique to identify and split clusters created by multiple charged particles in the ATLAS pixel detector using a set of artificial neural networks is presented. Such merged clusters are a common feature of tracks originating from highly energetic objects, such as jets. Neural networks are trained using Monte Carlo samples produced with a detailed detector simulation. This technique replaces the former clustering approach based on a connected component analysis and charge interpolation. The performance of the neural network splitting technique is quantified using data from proton-proton collisions at the LHC collected by the ATLAS detector in 2011 and from Monte Carlo simulations. This technique reduces the number of clusters shared between tracks in highly energetic jets by up to a factor of three. It also provides more precise position and error estimates of the clusters in both the transverse and longitudinal impact parameter resolution.

  15. Design, production, and reliability of the new ATLAS pixel opto-boards

    International Nuclear Information System (INIS)

    New fiber optical transceivers, opto-boards, were designed and produced to replace the first generation opto-boards installed in the ATLAS pixel detector and for the new pixel layer, the insertable barrel layer (IBL). Each opto-board contains one 12-channel PIN array and two 12-channel VCSEL arrays along with associated receiver and driver ASICs. The new opto-board design benefits from the production and operational experience of the first generation opto-boards and contains several improvements. The new opto-boards have been successfully installed. Additionally, a set of the new opto-boards have been subjected to an accelerated lifetime experiment at 85 C and 85% relative humidity for over 1,000 hours. No failures were observed. We are cautiously optimistic that the new opto-boards will survive until the shutdown for the detector upgrade for the high-luminosity Large Hadron Collider (HL-LHC)

  16. Performance of radiation-hard HV/HR CMOS sensors for the ATLAS inner detector upgrades

    Science.gov (United States)

    Liu, J.; Barbero, M.; Bilbao De Mendizabal, J.; Breugnon, P.; Godiot-Basolo, S.; Pangaud, P.; Rozanov, A.

    2016-03-01

    A major upgrade (Phase II Upgrade) to the Large Hadron Collider (LHC), scheduled for 2022, will be brought to the machine so as to extend its discovery potential. The upgraded LHC, called High-Luminosity LHC (HL-LHC), will run with a nominal leveled instantaneous luminosity of 5×1034 cm-2s-1, more than twice the expected luminosity. This unprecedented luminosity will result in higher occupancy and background radiations, which will request the design of a new Inner Tracker (ITk) which should have higher granularity, reduced material budget and improved radiation tolerance. A new pixel sensor concept based on High Voltage and High Resistivity CMOS (HV/HR CMOS) technology targeting the ATLAS inner detector upgrade is under exploration. With respect to the traditional hybrid pixel detector, the HV/HR CMOS sensor can potentially offer lower material budget, reduced pixel pitch and lower cost. Several prototypes have been designed and characterized within the ATLAS upgrade R&D effort, to investigate the detection and radiation hardness performance of various commercial technologies. An overview of the HV/HR CMOS sensor operation principle is described in this paper. The characterizations of three prototypes with X-ray, proton and neutron irradiation are also given.

  17. Performance of radiation-hard HV/HR CMOS sensors for the ATLAS inner detector upgrades

    International Nuclear Information System (INIS)

    A major upgrade (Phase II Upgrade) to the Large Hadron Collider (LHC), scheduled for 2022, will be brought to the machine so as to extend its discovery potential. The upgraded LHC, called High-Luminosity LHC (HL-LHC), will run with a nominal leveled instantaneous luminosity of 5×1034 cm−2s−1, more than twice the expected luminosity. This unprecedented luminosity will result in higher occupancy and background radiations, which will request the design of a new Inner Tracker (ITk) which should have higher granularity, reduced material budget and improved radiation tolerance. A new pixel sensor concept based on High Voltage and High Resistivity CMOS (HV/HR CMOS) technology targeting the ATLAS inner detector upgrade is under exploration. With respect to the traditional hybrid pixel detector, the HV/HR CMOS sensor can potentially offer lower material budget, reduced pixel pitch and lower cost. Several prototypes have been designed and characterized within the ATLAS upgrade R and D effort, to investigate the detection and radiation hardness performance of various commercial technologies. An overview of the HV/HR CMOS sensor operation principle is described in this paper. The characterizations of three prototypes with X-ray, proton and neutron irradiation are also given

  18. A 128 x 128 CMOS Active Pixel Image Sensor for Highly Integrated Imaging Systems

    Science.gov (United States)

    Mendis, Sunetra K.; Kemeny, Sabrina E.; Fossum, Eric R.

    1993-01-01

    A new CMOS-based image sensor that is intrinsically compatible with on-chip CMOS circuitry is reported. The new CMOS active pixel image sensor achieves low noise, high sensitivity, X-Y addressability, and has simple timing requirements. The image sensor was fabricated using a 2 micrometer p-well CMOS process, and consists of a 128 x 128 array of 40 micrometer x 40 micrometer pixels. The CMOS image sensor technology enables highly integrated smart image sensors, and makes the design, incorporation and fabrication of such sensors widely accessible to the integrated circuit community.

  19. Firmware development and testing of the ATLAS Pixel Detector / IBL ROD card

    Science.gov (United States)

    Gabrielli, A.; Backhaus, M.; Balbi, G.; Bindi, M.; Chen, S. P.; Falchieri, D.; Flick, T.; Hauck, S.; Hsu, S. C.; Kretz, M.; Kugel, A.; Lama, L.; Travaglini, R.; Wensing, M.

    2015-03-01

    The ATLAS Experiment is reworking and upgrading systems during the current LHC shut down. In particular, the Pixel detector has inserted an additional inner layer called the Insertable B-Layer (IBL). The Readout-Driver card (ROD), the Back-of-Crate card (BOC), and the S-Link together form the essential frontend data path of the IBL's off-detector DAQ system. The strategy for IBL ROD firmware development was three-fold: keeping as much of the Pixel ROD datapath firmware logic as possible, employing a complete new scheme of steering and calibration firmware, and designing the overall system to prepare for a future unified code version integrating IBL and Pixel layers. Essential features such as data formatting, frontend-specific error handling, and calibration are added to the ROD data path. An IBL DAQ test bench using a realistic front-end chip model was created to serve as an initial framework for full offline electronic system simulation. In this document, major firmware achievements concerning the IBL ROD data path implementation, test on the test bench and ROD prototypes, will be reported. Recent Pixel collaboration efforts focus on finalizing hardware and firmware tests for the IBL. The plan is to approach a complete IBL DAQ hardware-software installation by the end of 2014.

  20. Firmware development and testing of the ATLAS Pixel Detector / IBL ROD card

    International Nuclear Information System (INIS)

    The ATLAS Experiment is reworking and upgrading systems during the current LHC shut down. In particular, the Pixel detector has inserted an additional inner layer called the Insertable B-Layer (IBL). The Readout-Driver card (ROD), the Back-of-Crate card (BOC), and the S-Link together form the essential frontend data path of the IBL's off-detector DAQ system. The strategy for IBL ROD firmware development was three-fold: keeping as much of the Pixel ROD datapath firmware logic as possible, employing a complete new scheme of steering and calibration firmware, and designing the overall system to prepare for a future unified code version integrating IBL and Pixel layers. Essential features such as data formatting, frontend-specific error handling, and calibration are added to the ROD data path. An IBL DAQ test bench using a realistic front-end chip model was created to serve as an initial framework for full offline electronic system simulation. In this document, major firmware achievements concerning the IBL ROD data path implementation, test on the test bench and ROD prototypes, will be reported. Recent Pixel collaboration efforts focus on finalizing hardware and firmware tests for the IBL. The plan is to approach a complete IBL DAQ hardware-software installation by the end of 2014

  1. Prototypes for components of a control system for the ATLAS pixel detector at the HL-LHC

    CERN Document Server

    Boek, J; Kind, P; Mättig, P; Püllen, L; Zeitnitz, C

    2013-01-01

    inner detector of the ATLAS experiment will be replaced entirely including the pixel detector. This new pixel detector requires a specific control system which complies with the strict requirements in terms of radiation hardness, material budget and space for the electronics in the ATLAS experiment. The University ofWuppertal is developing a concept for a DCS (Detector Control System) network consisting of two kinds of ASICs. The first ASIC is the DCS Chip which is located on the pixel detector, very close to the interaction point. The second ASIC is the DCS Controller which is controlling 4x4 DCS Chips from the outer regions of ATLAS via differential data lines. Both ASICs are manufactured in 130 nm deep sub micron technology. We present results from measurements from new prototypes of components for the DCS network.

  2. Enhancing sensitivity for Active Pixel Sensors with fault tolerance and demosaicing

    OpenAIRE

    La Haye, Michelle Lorraine

    2007-01-01

    A key advantage to the Active Pixel Sensor (APS) over the traditional charge coupled device (CCD) is the ability to integrate electronics on chip. As image sensors become larger the number of defective pixels increases. In this thesis, a fault tolerant APS design is investigated that functions even in the presence of defects typical for image sensors, focusing on its sensitivity and a noise analysis with defects. The design has nearly twice the sensitivity and the signal-to-noise ratio only d...

  3. Error Resilient Image Communication with Chaotic Pixel Interleaving for Wireless Camera Sensors

    OpenAIRE

    Duran-Faundez, Cristian; Lecuire, Vincent

    2008-01-01

    New applications of wireless sensor networks require vision capabilities. Considering the high loss rates found in sensor networks, and the limited hardware resources of current sensor nodes, low-complexity robust image transmission must be implemented, avoiding as much as possible the need for retransmission or redundancy. In this paper we propose a pixel interleaving scheme based in Torus Automorphisms, thus, neighboring pixels are transmitted in different packets. Hence, if packets are los...

  4. Tracking and b-tagging with pixel vertex detector in ATLAS experiment at LHC

    International Nuclear Information System (INIS)

    The capability of the ATLAS detector to tag b-jets is studied, using the impact parameter of charged tracks. High b-tagging performance is needed at LHC, especially during the first years of running, in order to see evidence of the Higgs boson if its mass lies between 80 and 120 GeV/c2. A pattern-recognition algorithm has been developed for this purpose, using a detailed simulation of the ATLAS inner detector. Track-finding starts from the pixel detector layers. A 'hyper-plane' concept allows the use of a simple tracking algorithm though the complex geometry. High track-finding efficiency and reconstruction quality ensure the discrimination of b-jets from other kinds of jets. After full simulation and reconstruction of H → bb-bar, H → gg, H → uu-bar, H → ss-bar and H → cc-bar events (mH = 100 GeV/c2), the mean rejections achieved against non-b-jets for a 50% b-jet tagging efficiency are as follows: Rg=39±5 Ru = 60 ± 9 Rs = 38 ± 5 Rc = 9 ± 1 The analysis of data from the first radiation-hard pixel detector prototypes justifies the potential of these detectors for track-finding and high-precision impact parameter measurement at LHC. (author)

  5. Development of a highly pixelated direct charge sensor, Topmetal-I, for ionizing radiation imaging

    CERN Document Server

    Fan, Yan; Huang, Guangming; Li, Xiaoting; Mei, Yuan; Pei, Hua; Sun, Quan; Sun, Xiangming; Wang, Dong; Wang, Zhen; Xiao, Le; Yang, Ping

    2014-01-01

    Using industrial standard 0.35{\\mu}m CMOS Integrated Circuit process, we realized a highly pixelated sensor that directly collects charge via metal nodes placed on the top of each pixel and forms two dimensional images of charge cloud distribution. The first version, Topmetal-I, features a 64x64 pixel array of 80{\\mu}m pitch size. Direct charge calibration reveals an average capacitance of 210fF per pixel. The charge collection noise is near the thermal noise limit. With the readout, individual pixel channels exhibit a most probable equivalent noise charge of 330e-.

  6. Radiation-hard active CMOS pixel sensors for HL-LHC detector upgrades

    Science.gov (United States)

    Backhaus, Malte

    2015-02-01

    The luminosity of the Large Hadron Collider (LHC) will be increased during the Long Shutdown of 2022 and 2023 (LS3) in order to increase the sensitivity of its experiments. A completely new inner detector for the ATLAS experiment needs to be developed to withstand the extremely harsh environment of the upgraded, so-called High-Luminosity LHC (HL-LHC). High radiation hardness as well as granularity is mandatory to cope with the requirements in terms of radiation damage as well as particle occupancy. A new silicon detector concept that uses commercial high voltage and/or high resistivity full complementary metal-oxide-semiconductor (CMOS) processes as active sensor for pixel and/or strip layers has risen high attention, because it potentially provides high radiation hardness and granularity and at the same time reduced price due to the commercial processing and possibly relaxed requirements for the hybridization technique. Results on the first prototypes characterized in a variety of laboratory as well as test beam environments are presented.

  7. HV/HR-CMOS sensors for the ATLAS upgrade—concepts and test chip results

    International Nuclear Information System (INIS)

    In order to extend its discovery potential, the Large Hadron Collider (LHC) will have a major upgrade (Phase II Upgrade) scheduled for 2022. The LHC after the upgrade, called High-Luminosity LHC (HL-LHC), will operate at a nominal leveled instantaneous luminosity of 5× 1034 cm−2 s−1, more than twice the expected Phase I . The new Inner Tracker needs to cope with this extremely high luminosity. Therefore it requires higher granularity, reduced material budget and increased radiation hardness of all components. A new pixel detector based on High Voltage CMOS (HVCMOS) technology targeting the upgraded ATLAS pixel detector is under study. The main advantages of the HVCMOS technology are its potential for low material budget, use of possible cheaper interconnection technologies, reduced pixel size and lower cost with respect to traditional hybrid pixel detector. Several first prototypes were produced and characterized within ATLAS upgrade R and D effort, to explore the performance and radiation hardness of this technology. In this paper, an overview of the HVCMOS sensor concepts is given. Laboratory tests and irradiation tests of two technologies, HVCMOS AMS and HVCMOS GF, are also given

  8. HV/HR-CMOS sensors for the ATLAS upgrade—concepts and test chip results

    Science.gov (United States)

    Liu, J.; Backhaus, M.; Barbero, M.; Bates, R.; Blue, A.; Bompard, F.; Breugnon, P.; Buttar, C.; Capeans, M.; Clemens, J. C.; Feigl, S.; Ferrere, D.; Fougeron, D.; Garcia-Sciveres, M.; George, M.; Godiot-Basolo, S.; Gonella, L.; Gonzalez-Sevilla, S.; Große-Knetter, J.; Hemperek, T.; Hügging, F.; Hynds, D.; Iacobucci, G.; Kreidl, C.; Krüger, H.; La Rosa, A.; Miucci, A.; Muenstermann, D.; Nessi, M.; Obermann, T.; Pangaud, P.; Perić, I.; Pernegger, H.; Quadt, A.; Rieger, J.; Ristic, B.; Rozanov, A.; Weingarten, J.; Wermes, N.

    2015-03-01

    In order to extend its discovery potential, the Large Hadron Collider (LHC) will have a major upgrade (Phase II Upgrade) scheduled for 2022. The LHC after the upgrade, called High-Luminosity LHC (HL-LHC), will operate at a nominal leveled instantaneous luminosity of 5× 1034 cm-2 s-1, more than twice the expected Phase I . The new Inner Tracker needs to cope with this extremely high luminosity. Therefore it requires higher granularity, reduced material budget and increased radiation hardness of all components. A new pixel detector based on High Voltage CMOS (HVCMOS) technology targeting the upgraded ATLAS pixel detector is under study. The main advantages of the HVCMOS technology are its potential for low material budget, use of possible cheaper interconnection technologies, reduced pixel size and lower cost with respect to traditional hybrid pixel detector. Several first prototypes were produced and characterized within ATLAS upgrade R&D effort, to explore the performance and radiation hardness of this technology. In this paper, an overview of the HVCMOS sensor concepts is given. Laboratory tests and irradiation tests of two technologies, HVCMOS AMS and HVCMOS GF, are also given.

  9. Two ATLAS suppliers honoured

    CERN Document Server

    2007-01-01

    The ATLAS experiment has recognised the outstanding contribution of two firms to the pixel detector. Recipients of the supplier award with Peter Jenni, ATLAS spokesperson, and Maximilian Metzger, CERN Secretary-General.At a ceremony held at CERN on 28 November, the ATLAS collaboration presented awards to two of its suppliers that had produced sensor wafers for the pixel detector. The CiS Institut für Mikrosensorik of Erfurt in Germany has supplied 655 sensor wafers containing a total of 1652 sensor tiles and the firm ON Semiconductor has supplied 515 sensor wafers (1177 sensor tiles) from its foundry at Roznov in the Czech Republic. Both firms have successfully met the very demanding requirements. ATLAS’s huge pixel detector is very complicated, requiring expertise in highly specialised integrated microelectronics and precision mechanics. Pixel detector project leader Kevin Einsweiler admits that when the project was first propo...

  10. Firmware development and testing of the ATLAS Pixel Detector / IBL ROD card

    CERN Document Server

    Gabrielli, Alessandro; The ATLAS collaboration; Balbi, Gabriele; Bindi, Marcello; Chen, Shaw-pin; Falchieri, Davide; Flick, Tobias; Hauck, Scott Alan; Hsu, Shih-Chieh; Kretz, Moritz; Kugel, Andreas; Lama, Luca; Travaglini, Riccardo; Wensing, Marius; ATLAS Pixel Collaboration

    2015-01-01

    The ATLAS Experiment is reworking and upgrading systems during the current LHC shut down. In particular, the Pixel detector has inserted an additional inner layer called Insertable B-Layer (IBL). The Readout-Driver card (ROD), the Back-of-Crate card (BOC), and the S-Link together form the essential frontend data path of the IBL’s off-detector DAQ system. The strategy for IBL ROD firmware development was three-fold: keeping as much of the Pixel ROD datapath firmware logic as possible, employing a complete new scheme of steering and calibration firmware and designing the overall system to prepare for a future unified code version integrating IBL and Pixel layers. Essential features such as data formatting, frontend-specific error handling, and calibration are added to the ROD data path. An IBL DAQ testbench using realistic frontend chip model was created to serve as an initial framework for full offline electronic system simulation. In this document, major firmware achievements concerning the IBL ROD data pat...

  11. Firmware development and testing of the ATLAS Pixel Detector / IBL ROD card

    CERN Document Server

    Balbi, G; The ATLAS collaboration; Gabrielli, A; Lama, L; Travaglini, R; Backhaus, M; Bindi, M; Chen, S-P; Flick, T; Kretz, M; Kugel, A; Wensing, M

    2014-01-01

    The ATLAS Experiment is reworking and upgrading systems during the current LHC shut down. In particular, the Pixel detector has inserted an additional inner layer called Insertable B-Layer (IBL). The Readout-Driver card (ROD), the Back-of-Crate card (BOC), and the S-Link together form the essential frontend data path of the IBL’s off-detector DAQ system. The strategy for IBLROD firmware development was three-fold: keeping as much of the PixelROD datapath firmware logic as possible, employing a complete new scheme of steering and calibration firmware and designing the overall system to prepare for a future unified code version integrating IBL and Pixel layers. Essential features such as data formatting, frontend-specific error handling, and calibration are added to the ROD data path. An IBLDAQ testbench using realistic frontend chip model was created to serve as an initial framework for full offline electronic system simulation. In this document, major firmware achievements concerning the IBLROD data path im...

  12. System test and noise performance studies at the ATLAS pixel detector

    International Nuclear Information System (INIS)

    The central component of the ATLAS Inner Tracker is the pixel detector. It consists of three barrel layers and three disk-layers in the end-caps in both forward directions. The innermost barrel layer is mounted at a distance of about 5 cm from the interaction region. With its very high granularity, truly two-dimensional hit information, and fast readout it is well suited to cope with the high densities of charged tracks, expected this close to the interaction region. The huge number of readout channels necessitates a very complex services infrastructure for powering, readout and safety. After a description of the pixel detector and its services infrastructure, key results from the system test at CERN are presented. Furthermore the noise performance of the pixel detector, crucial for high tracking and vertexing efficiencies, is studied. Measurements of the single-channel random noise are presented together with studies of common mode noise and measurements of the noise occupancy using a random trigger generator. (orig.)

  13. System test and noise performance studies at the ATLAS pixel detector

    Energy Technology Data Exchange (ETDEWEB)

    Weingarten, J.

    2007-09-15

    The central component of the ATLAS Inner Tracker is the pixel detector. It consists of three barrel layers and three disk-layers in the end-caps in both forward directions. The innermost barrel layer is mounted at a distance of about 5 cm from the interaction region. With its very high granularity, truly two-dimensional hit information, and fast readout it is well suited to cope with the high densities of charged tracks, expected this close to the interaction region. The huge number of readout channels necessitates a very complex services infrastructure for powering, readout and safety. After a description of the pixel detector and its services infrastructure, key results from the system test at CERN are presented. Furthermore the noise performance of the pixel detector, crucial for high tracking and vertexing efficiencies, is studied. Measurements of the single-channel random noise are presented together with studies of common mode noise and measurements of the noise occupancy using a random trigger generator. (orig.)

  14. 1T Pixel Using Floating-Body MOSFET for CMOS Image Sensors

    OpenAIRE

    Guo-Neng Lu; Arnaud Tournier; François Roy; Benoît Deschamps

    2009-01-01

    We present a single-transistor pixel for CMOS image sensors (CIS). It is a floating-body MOSFET structure, which is used as photo-sensing device and source-follower transistor, and can be controlled to store and evacuate charges. Our investigation into this 1T pixel structure includes modeling to obtain analytical description of conversion gain. Model validation has been done by comparing theoretical predictions and experimental results. On the other hand, the 1T pixel structure has been impl...

  15. A High-Speed CMOS Image Sensor with Global Electronic Shutter Pixels Using Pinned Diodes

    Science.gov (United States)

    Yasutomi, Keita; Tamura, Toshihiro; Furuta, Masanori; Itoh, Shinya; Kawahito, Shoji

    This paper describes a high-speed CMOS image sensor with a new type of global electronic shutter pixel. A global electronic shutter is necessary for imaging fast-moving objects without motion blur or distortion. The proposed pixel has two potential wells with pinned diode structure for two-stage charge transfer that enables a global electronic shuttering and reset noise canceling. A prototype high-speed image sensor fabricated in 0.18μm standard CMOS image sensor process consists of the proposed pixel array, 12-bit column-parallel cyclic ADC arrays and 192-channel digital outputs. The sensor achieves a good linearity at low-light intensity, demonstrating the perfect charge transfer between two pinned diodes. The input referred noise of the proposed pixel is measured to be 6.3 e-.

  16. Status and perspectives of pixel sensors based on 3D vertical integration

    International Nuclear Information System (INIS)

    This paper reviews the most recent developments of 3D integration in the field of silicon pixel sensors and readout integrated circuits. This technology may address the needs of future high energy physics and photon science experiments by increasing the electronic functional density in small pixel readout cells and by stacking various device layers based on different technologies, each optimized for a different function. Current efforts are aimed at improving the performance of both hybrid pixel detectors and of CMOS sensors. The status of these activities is discussed here, taking into account experimental results on 3D devices developed in the frame of the 3D-IC consortium. The paper also provides an overview of the ideas that are being currently devised for novel 3D vertically integrated pixel sensors. - Highlights: • 3D integration is a promising technology for pixel sensors in high energy physics. • Experimental results on two-layer 3D CMOS pixel sensors are presented. • The outcome of the first run from the 3D-IC consortium is discussed. • The AIDA network is studying via-last 3D integration of heterogeneous layers. • New ideas based on 3D vertically integrated pixels are being developed for HEP

  17. Prototype Active Silicon Sensor in 150 nm HR-CMOS Technology for ATLAS Inner Detector Upgrade

    CERN Document Server

    Rymaszewski, Piotr; Breugnon, Patrick; Godiot, Stépahnie; Gonella, Laura; Hemperek, Tomasz; Hirono, Toko; Hügging, Fabian; Krüger, Hans; Liu, Jian; Pangaud, Patrick; Peric, Ivan; Rozanov, Alexandre; Wang, Anqing; Wermes, Norbert

    2016-01-01

    The LHC Phase-II upgrade will lead to a significant increase in luminosity, which in turn will bring new challenges for the operation of inner tracking detectors. A possible solution is to use active silicon sensors, taking advantage of commercial CMOS technologies. Currently ATLAS R&D programme is qualifying a few commercial technologies in terms of suitability for this task. In this paper a prototype designed in one of them (LFoundry 150 nm process) will be discussed. The chip architecture will be described, including different pixel types incorporated into the design, followed by simulation and measurement results.

  18. Prototype Active Silicon Sensor in 150 nm HR-CMOS technology for ATLAS Inner Detector Upgrade

    Science.gov (United States)

    Rymaszewski, P.; Barbero, M.; Breugnon, P.; Godiot, S.; Gonella, L.; Hemperek, T.; Hirono, T.; Hügging, F.; Krüger, H.; Liu, J.; Pangaud, P.; Peric, I.; Rozanov, A.; Wang, A.; Wermes, N.

    2016-02-01

    The LHC Phase-II upgrade will lead to a significant increase in luminosity, which in turn will bring new challenges for the operation of inner tracking detectors. A possible solution is to use active silicon sensors, taking advantage of commercial CMOS technologies. Currently ATLAS R&D programme is qualifying a few commercial technologies in terms of suitability for this task. In this paper a prototype designed in one of them (LFoundry 150 nm process) will be discussed. The chip architecture will be described, including different pixel types incorporated into the design, followed by simulation and measurement results.

  19. Ongoing studies for the control system of a serially powered ATLAS pixel detector at the HL-LHC

    Science.gov (United States)

    Kersten, S.; Püllen, L.; Zeitnitz, C.

    2016-02-01

    In terms of the phase-2 upgrade of the ATLAS detector, the entire inner tracker (ITk) of ATLAS will be replaced. This includes the pixel detector and the corresponding detector control system (DCS). The current baseline is a serial powering scheme of the detector modules. Therefore a new detector control system is being developed with emphasis on the supervision of serially powered modules. Previous chips had been designed to test the radiation hardness of the technology and the implementation of the modified I2C as well as the implementation of the logic of the CAN protocol. This included tests with triple redundant registers. The described chip is focusing on the implementation in a serial powering scheme. It was designed for laboratory tests, aiming for the proof of principle. The concept of the DCS for ATLAS pixel after the phase-2 upgrade is presented as well as the status of development including tests with the prototype ASIC.

  20. Characterisation of regional variations in a stitched CMOS active pixel sensor

    International Nuclear Information System (INIS)

    Stitched, large area, complementary metal-oxide-semiconductor (CMOS), active pixel sensors (APS) show promises for X-ray imaging applications. In this paper we present an investigation of the effects of stitching on uniformity of sensor response for an experimental APS. The sensor, known as LAS (large area sensor), was made by reticular stitching onto a single silicon wafer of a 5x5 array of regions consisting of 270x270 pixels with 40 μm pixel pitch, to yield 1350x1350 pixels and an imaging area of 54x54 mm. Data acquired from two different sensors of the same type were filtered to remove spiking pixels and electromagnetic interference (EMI). The non-linear compensation (NLC) technique for CMOS sensor analysis was used to determine the variation in gain, read noise, full well capacity and dynamic range between stitched regions. Variations across stitched regions were analysed using profiles, analysis of pixel variations at stitch boundaries and using a measurement of non-uniformity within a stitched region. The results showed that non-uniformity variations were present, which increased with signal (1.5-3.5% at dark signal, rising to 3-8%). However, these were found to be smaller than variations caused by differences in readout electronics, particularly at low signal levels. The results suggest these variations should be correctable using standard calibration methods.

  1. Planar pixel sensors for the ATLAS upgrade: beam tests results

    Czech Academy of Sciences Publication Activity Database

    Weingarten, J.; Altenheiner, S.; Beimforde, M.; Benoit, M.; Bomben, M.; Calderini, G.; Gallrapp, C.; George, M.; Gibson, S.; Grinstein, S.; Janoška, Zdenko; Jentzsch, J.; Jinnouchi, O.; Kishida, T.; La Rosa, A.; Libov, V.; Macchiolo, A.; Marchiori, G.; Muenstermann, D.; Nagai, R.; Piacquadio, G.; Ristic, B.; Rubinskiy, I.; Rummler, A.; Takubo, Y.; Troska, G.; Tsiskaridtze, S.; Tsurin, I.; Unno, Y.; Weigell, P.; Wittig, T.

    2012-01-01

    Roč. 7, Oct (2012), "P10028-1"-"P10028-26". ISSN 1748-0221 Institutional support: RVO:68378271 Keywords : particle tracking detectors * solid state detectors * radiation -hard detectors Subject RIV: BL - Plasma and Gas Discharge Physics Impact factor: 1.869, year: 2011

  2. Multi-chip module development for the ATLAS pixel detector. Analysis of the front-end chip electronics in radiation hard 0.25-{mu}m technology as well as development and realization of a serial power concept; Multi-Chip-Modul-Entwicklung fuer den ATLAS-Pixeldetektor. Analyse der Front-End-Chip-Elektronik in strahlenharter0,25-{mu}m-Technologie sowie Entwicklung und Realisierung eines Serial-Powering-Konzeptes

    Energy Technology Data Exchange (ETDEWEB)

    Stockmanns, T.

    2004-08-01

    The innermost layer of the ATLAS tracking system is a silicon pixel detector. The use of radiation tolerant components is mandatory due to the harsh radiation environment. The smallest independent component of the pixel detector is a hybride pixel module consisting of a large oxygen enriched silicon sensor and 16 specifically developed ASICs. To achieve the necessary radiation tolerance the ASICs are produced in a 0.25 {mu}m technology in combination with special design techniques. The measurements of the readout electronics during all stages of production of a full module are presented and the performance of the modules is compared with the strict requirements of the ATLAS pixel detector. Furthermore a new powering scheme for pixel detectors is presented, aiming at reducing the total power consumption, the material for the electrical services and the amount of power cables. The advantages and disadvantages of this concept are discussed on the example of the ATLAS pixel detector with pixel modules modified accounting to the new powering scheme. The performance of six of those modules operating at the same time in a small system test is compared to that of normal ATLAS pixel modules. (orig.)

  3. Experience in fabrication of multichip-modules for the ATLAS pixel detector

    International Nuclear Information System (INIS)

    About 1100 ATLAS bare modules will be assembled at Fraunhofer IZM. The bumping and assembly technology of these multichip-modules is described in this paper. Pixel contacts and lead-tin interconnection bumps are deposited by electroplating. A high yield manufacturing technology requires electrical test and optical inspection on wafer level as well as on chip level. In this paper, the result of optical inspection of more than 7600 readout chips is presented. Handling mistakes are the main reason for rejection of chips before flip chip assembly. A reliable process technology, the assembly of electrical Known Good Die (KGD), optical inspection after bumping and the development of a single chip repair technology result in 98% of good modules after flip chip assembly. The reliability of the bump interconnections was even checked by thermal cycling and accelerated thermal aging

  4. 1T Pixel Using Floating-Body MOSFET for CMOS Image Sensors.

    Science.gov (United States)

    Lu, Guo-Neng; Tournier, Arnaud; Roy, François; Deschamps, Benoît

    2009-01-01

    We present a single-transistor pixel for CMOS image sensors (CIS). It is a floating-body MOSFET structure, which is used as photo-sensing device and source-follower transistor, and can be controlled to store and evacuate charges. Our investigation into this 1T pixel structure includes modeling to obtain analytical description of conversion gain. Model validation has been done by comparing theoretical predictions and experimental results. On the other hand, the 1T pixel structure has been implemented in different configurations, including rectangular-gate and ring-gate designs, and variations of oxidation parameters for the fabrication process. The pixel characteristics are presented and discussed. PMID:22389592

  5. Rad Tolerant CMOS Image Sensor Based on Hole Collection 4T Pixel Pinned Photodiode

    OpenAIRE

    Place, Sébastien; Carrere, Jean-Pierre; Allegret, Stephane; Magnan, Pierre; Goiffon, Vincent; Roy, François

    2012-01-01

    1.4μm pixel pitch CMOS Image sensors based on hole collection pinned photodiode (HPD) have been irradiated with 60Co source. The HPD sensors exhibit much lower dark current degradation than equivalent commercial sensors using an Electron collection Pinned Photodiode (EPD). This hardness improvement is mainly attributed to carrier accumulation near the interfaces induced by the generated positive charges in dielectrics. The pre-eminence of this image sensor based on hole collection pinned phot...

  6. Improving charge-collection efficiency of SOI pixel sensors for X-ray astronomy

    Science.gov (United States)

    Matsumura, Hideaki; Tsuru, Takeshi Go; Tanaka, Takaaki; Takeda, Ayaki; Arai, Yasuo; Mori, Koji; Nishioka, Yusuke; Takenaka, Ryota; Kohmura, Takayoshi; Nakashima, Shinya; Hatsui, Takaki; Kohmura, Yoshiki; Takei, Dai; Kameshima, Takashi

    2015-09-01

    We have been developing a new type of active pixel sensor, referred to as "XRPIX" for future X-ray astronomy satellites on the basis of silicon-on-insulator CMOS technology. The problem on our previous device, XRPIX1b, was degradation of the charge-collection efficiency (CCE) at pixel borders. In order to investigate the non-uniformity of the CCE within a pixel, we measured sub-pixel response with X-ray beams whose diameters are 10 μmΦ at SPring-8. We found that the X-ray detection efficiency and CCE degrade in the sensor region under the pixel circuitry placed outside the buried p-wells (BPW). A 2D simulation of the electric fields with the semiconductor device simulator HyDeLEOS shows that the isolated pixel circuitry outside the BPW makes local minimums in the electric potentials at the interface between the sensor and buried oxide layers, where a part of charge is trapped and is not collected to the BPW. Based on this result, we modified the placement of the in-pixel circuitry in the next device, XRPIX2b, for the electric fields to be converged toward the BPW, and confirmed that the CCE at pixel borders is successfully improved.

  7. Analog front-end cell designed in a commercial 025 mu m process for the ATLAS pixel detector at LHC

    CERN Document Server

    Blanquart, L; Comes, G; Denes, P; Einsweiler, Kevin F; Fischer, P; Mandelli, E; Meddeler, G; Peric, I; Richardson, J

    2002-01-01

    A new analog pixel front-end cell has been developed for the ATLAS detector at the future Large Hadron Collider (LHC) at the European Laboratory for Particle Physics (CERN). This analog cell has been submitted in two commercial 0.25 mu m CMOS processes (in an analog test chip format), using special layout techniques for radiation hardness purposes. It is composed of two cascaded amplifiers followed by a fast discriminator featuring a detection threshold within the range of 1000 to 10000 electrons. The first preamplifier has the principal role of providing a large bandwidth, low input impedance, and fast rise time in order to enhance the time-walk and crosstalk performance, whereas the second fully differential amplifier is aimed at delivering a sufficiently high-voltage gain for optimum comparison. A new do feedback concept renders the cell tolerant of sensor leakage current up to 300 nA and provides monitoring of this current. Two 5-bit digital-to-analog converters tolerant to single- event upset have been i...

  8. A reticle size CMOS pixel sensor dedicated to the STAR HFT

    Science.gov (United States)

    Valin, I.; Hu-Guo, C.; Baudot, J.; Bertolone, G.; Besson, A.; Colledani, C.; Claus, G.; Dorokhov, A.; Dozière, G.; Dulinski, W.; Gelin, M.; Goffe, M.; Himmi, A.; Jaaskelainen, K.; Morel, F.; Pham, H.; Santos, C.; Senyukov, S.; Specht, M.; Voutsinas, G.; Wang, J.; Winter, M.

    2012-01-01

    ULTIMATE is a reticle size CMOS Pixel Sensor (CPS) designed to meet the requirements of the STAR pixel detector (PXL). It includes a pixel array of 928 rows and 960 columns with a 20.7 μm pixel pitch, providing a sensitive area of ~ 3.8 cm2. Based on the sensor designed for the EUDET beam telescope, the device is a binary output sensor with integrated zero suppression circuitry featuring a 320 Mbps data throughput capability. It was fabricated in a 0.35 μm OPTO process early in 2011. The design and preliminary test results, including charged particle detection performances measured at the CERN-SPS, are presented.

  9. A reticle size CMOS pixel sensor dedicated to the STAR HFT

    International Nuclear Information System (INIS)

    ULTIMATE is a reticle size CMOS Pixel Sensor (CPS) designed to meet the requirements of the STAR pixel detector (PXL). It includes a pixel array of 928 rows and 960 columns with a 20.7 μm pixel pitch, providing a sensitive area of ∼ 3.8 cm2. Based on the sensor designed for the EUDET beam telescope, the device is a binary output sensor with integrated zero suppression circuitry featuring a 320 Mbps data throughput capability. It was fabricated in a 0.35 μm OPTO process early in 2011. The design and preliminary test results, including charged particle detection performances measured at the CERN-SPS, are presented.

  10. Status and perspectives of pixel sensors based on 3D vertical integration

    CERN Document Server

    Re, V

    2014-01-01

    This paper reviews the most recent developments of 3D integration in the field of silicon pixel sensors and readout integrated circuits. This technology may address the needs of future high energy physics and photon science experiments by increasing the electronic functional density in small pixel readout cells and by stacking various device layers based on different technologies, each optimized for a different function. Current efforts are aimed at improving the performance of both hybrid pixel detectors and of CMOS sensors. The status of these activities is discussed here, taking into account experimental results on 3D devices developed in the frame of the 3D-IC consortium. The paper also provides an overview of the ideas that are being currently devised for novel 3D vertically integrated pixel sensors.

  11. A low-noise CMOS pixel direct charge sensor, Topmetal-II-

    Science.gov (United States)

    An, Mangmang; Chen, Chufeng; Gao, Chaosong; Han, Mikyung; Ji, Rong; Li, Xiaoting; Mei, Yuan; Sun, Quan; Sun, Xiangming; Wang, Kai; Xiao, Le; Yang, Ping; Zhou, Wei

    2016-02-01

    We report the design and characterization of a CMOS pixel direct charge sensor, Topmetal-II-, fabricated in a standard 0.35 μm CMOS Integrated Circuit process. The sensor utilizes exposed metal patches on top of each pixel to directly collect charge. Each pixel contains a low-noise charge-sensitive preamplifier to establish the analog signal and a discriminator with tunable threshold to generate hits. The analog signal from each pixel is accessible through time-shared multiplexing over the entire array. Hits are read out digitally through a column-based priority logic structure. Tests show that the sensor achieved a advantages in low background and low rate-density experiments.

  12. Development of a versatile readout and test system and characterization of a capacitively coupled active pixel sensor

    Energy Technology Data Exchange (ETDEWEB)

    Janssen, Jens; Gonella, Laura; Hemperek, Tomasz; Hirono, Toko; Huegging, Fabian; Krueger, Hans; Wermes, Norbert [Institute of Physics, University of Bonn, Bonn (Germany); Peric, Ivan [Karlsruher Institut fuer Technologie, Karlsruhe (Germany); Collaboration: ATLAS-Collaboration

    2015-07-01

    With the availability of high voltage and high resistivity CMOS processes, active pixel sensors are becoming increasingly interesting for radiation detection in high energy physics experiments. Although the pixel signal-to-noise ratio and the sensor radiation tolerance were improved, active pixel sensors cannot yet compete with state-of-the-art hybrid pixel detector in a high radiation environment. Hence, active pixel sensors are possible candidates for the outer tracking detector in HEP experiments where production cost plays a role. The investigation of numerous prototyping steps and different technologies is still ongoing and requires a versatile test and readout system, which will be presented in this talk. A capacitively coupled active pixel sensor fabricated in AMS 180 nm high voltage CMOS process is investigated. The sensor is designed to be glued to existing front-end pixel readout chips. Results from the characterization are presented in this talk.

  13. Development of a versatile readout and test system and characterization of a capacitively coupled active pixel sensor

    International Nuclear Information System (INIS)

    With the availability of high voltage and high resistivity CMOS processes, active pixel sensors are becoming increasingly interesting for radiation detection in high energy physics experiments. Although the pixel signal-to-noise ratio and the sensor radiation tolerance were improved, active pixel sensors cannot yet compete with state-of-the-art hybrid pixel detector in a high radiation environment. Hence, active pixel sensors are possible candidates for the outer tracking detector in HEP experiments where production cost plays a role. The investigation of numerous prototyping steps and different technologies is still ongoing and requires a versatile test and readout system, which will be presented in this talk. A capacitively coupled active pixel sensor fabricated in AMS 180 nm high voltage CMOS process is investigated. The sensor is designed to be glued to existing front-end pixel readout chips. Results from the characterization are presented in this talk.

  14. The silicon microstrip sensors of the ATLAS semiconductor tracker

    OpenAIRE

    Spieler, Helmuth G; ATLAS SCT Collaboration

    2008-01-01

    This paper describes the AC-coupled, single-sided, p-in-n silicon microstrip sensors used in the Semiconductor Tracker (SCT) of the ATLAS experiment at the CERN Large Hadron Collider (LHC). The sensor requirements, specifications and designs are discussed, together with the qualification and quality assurance procedures adopted for their production. The measured sensor performance is presented, both initially and after irradiation to the fluence anticipated after 10 years of LHC operation. Th...

  15. Three Generations of FPGA DAQ Development for the ATLAS Pixel Detector

    CERN Document Server

    AUTHOR|(CDS)2091916; Hsu, Shih-Chieh; Hauck, Scott Alan

    The Large Hadron Collider (LHC) at the European Center for Nuclear Research (CERN) tracks a schedule of long physics runs, followed by periods of inactivity known as Long Shutdowns (LS). During these LS phases both the LHC, and the experiments around its ring, undergo maintenance and upgrades. For the LHC these upgrades improve their ability to create data for physicists; the more data the LHC can create the more opportunities there are for rare events to appear that physicists will be interested in. The experiments upgrade so they can record the data and ensure the event won’t be missed. Currently the LHC is in Run 2 having completed the first LS of three. This thesis focuses on the development of Field-Programmable Gate Array (FPGA)-based readout systems that span across three major tasks of the ATLAS Pixel data acquisition (DAQ) system. The evolution of Pixel DAQ’s Readout Driver (ROD) card is presented. Starting from improvements made to the new Insertable B-Layer (IBL) ROD design, which was part of t...

  16. Silvaco ATLAS model of ESA's Gaia satellite e2v CCD91-72 pixels

    CERN Document Server

    Seabroke, G M; Burt, D; Robbins, M S; 10.1117/12.856958

    2010-01-01

    The Gaia satellite is a high-precision astrometry, photometry and spectroscopic ESA cornerstone mission, currently scheduled for launch in 2012. Its primary science drivers are the composition, formation and evolution of the Galaxy. Gaia will achieve its unprecedented accuracy requirements with detailed calibration and correction for CCD radiation damage and CCD geometric distortion. In this paper, the third of the series, we present our 3D Silvaco ATLAS model of the Gaia e2v CCD91-72 pixel. We publish e2v's design model predictions for the capacities of one of Gaia's pixel features, the supplementary buried channel (SBC), for the first time. Kohley et al. (2009) measured the SBC capacities of a Gaia CCD to be an order of magnitude smaller than e2v's design. We have found the SBC doping widths that yield these measured SBC capacities. The widths are systematically 2 {\\mu}m offset to the nominal widths. These offsets appear to be uncalibrated systematic offsets in e2v photolithography, which could either be du...

  17. Low Power Camera-on-a-Chip Using CMOS Active Pixel Sensor Technology

    Science.gov (United States)

    Fossum, E. R.

    1995-01-01

    A second generation image sensor technology has been developed at the NASA Jet Propulsion Laboratory as a result of the continuing need to miniaturize space science imaging instruments. Implemented using standard CMOS, the active pixel sensor (APS) technology permits the integration of the detector array with on-chip timing, control and signal chain electronics, including analog-to-digital conversion.

  18. Development and characterization of the latest X-ray SOI pixel sensor for a future astronomical mission

    International Nuclear Information System (INIS)

    We have been developing active pixel sensors based on silicon-on-insulator technology for future X-ray astronomy missions. Recently we fabricated the new prototype named “XRPIX2”, and investigated its spectroscopic performance. For comparison and evaluation of different chip designs, XRPIX2 consists of 3 pixel types: Small Pixel, Large Pixel 1, and Large Pixel 2. In Small Pixel, we found that the gains of the 68% pixels are within 1.4% of the mean value, and the energy resolution is 656 eV (FWHM) for 8 keV X-rays, which is the best spectroscopic performance in our development. The pixel pitch of Large Pixel 1 and Large Pixel 2 is twice as large as that of Small Pixel. Charge sharing events are successfully reduced for Large Pixel 1. Moreover Large Pixel 2 has multiple nodes for charge collection in a pixel. We confirmed that the multi-nodes structure is effective to increase charge collection efficiency. -- Highlights: •We performed the evaluation of the newly fabricated SOI sensor for X-ray astronomy. •The pixel-to-pixel gain variation is small in the 64 ×144 pixel format. •The energy resolution is improved by the optimization of the pixel design. •The multi charge collection nodes improved the charge collection efficiency

  19. Development and characterization of the latest X-ray SOI pixel sensor for a future astronomical mission

    Energy Technology Data Exchange (ETDEWEB)

    Nakashima, Shinya, E-mail: shinya@cr.scphys.kyoto-u.ac.jp [Department of Physics, Graduate School of Science, Kyoto University, Kitashirakawa Oiwake-cho, Sakyo-ku, Kyoto 606-8502 (Japan); Gando Ryu, Syukyo; Tanaka, Takaaki; Go Tsuru, Takeshi [Department of Physics, Graduate School of Science, Kyoto University, Kitashirakawa Oiwake-cho, Sakyo-ku, Kyoto 606-8502 (Japan); Takeda, Ayaki [Department of Particle and Nuclear Physics, Graduate School of High Energy Accelerator Science, The Graduate University for Advanced Studies (SOKENDAI), High Energy Accelerator Research Organization (KEK), 1-1 Oho, Tsukuba, Ibaraki 305-0801 (Japan); Arai, Yasuo [Institute of Particle and Nuclear Studies, High Energy Accelerator Research Organization (KEK), Tsukuba 305-0801 (Japan); Imamura, Toshifumi; Ohmoto, Takafumi; Iwata, Atsushi [A-R-Tec Corp., Hiroshima Techno Plaza 405, 3-13-26 Kagamiyama, Higashi-Hiroshima 739-0046 (Japan)

    2013-12-11

    We have been developing active pixel sensors based on silicon-on-insulator technology for future X-ray astronomy missions. Recently we fabricated the new prototype named “XRPIX2”, and investigated its spectroscopic performance. For comparison and evaluation of different chip designs, XRPIX2 consists of 3 pixel types: Small Pixel, Large Pixel 1, and Large Pixel 2. In Small Pixel, we found that the gains of the 68% pixels are within 1.4% of the mean value, and the energy resolution is 656 eV (FWHM) for 8 keV X-rays, which is the best spectroscopic performance in our development. The pixel pitch of Large Pixel 1 and Large Pixel 2 is twice as large as that of Small Pixel. Charge sharing events are successfully reduced for Large Pixel 1. Moreover Large Pixel 2 has multiple nodes for charge collection in a pixel. We confirmed that the multi-nodes structure is effective to increase charge collection efficiency. -- Highlights: •We performed the evaluation of the newly fabricated SOI sensor for X-ray astronomy. •The pixel-to-pixel gain variation is small in the 64 ×144 pixel format. •The energy resolution is improved by the optimization of the pixel design. •The multi charge collection nodes improved the charge collection efficiency.

  20. Commissioning of the Atlas pixel detector and search of the Higgs boson in the tt-H, H → bb- channel with the Atlas experiment at the LHC

    International Nuclear Information System (INIS)

    The global fit of Higgs boson quantum contributions to the electroweak experimental observables, computed within the Standard Model, favors a light Higgs boson with a mass of mH = 90-27+36 GeV, on the edge of the 95% Confidence Level region excluded by LEP. Finding a light Higgs boson at LHC is experimentally difficult and several channels with various signatures will be sought for. The associated production of the Higgs boson with a pair of top quarks, with the subsequent decay of the Higgs boson into b-quark pairs (dominant for mH <135 GeV), is one of the channels considered. This channel opens the possibility of measuring the top and b-quark Yukawa couplings. The potential of the ATLAS detector to observe this channel is described. Several ingredients are crucial: the reconstruction of the top-anti-top system with a high-purity, excellent b-tagging capabilities and good knowledge of the tt-bar+jets background. The pixel detector is the most important ATLAS sub-detectors for tagging b -jets. The ATLAS detector was commissioned with cosmic muon rays in autumn 2008. The pixel detector dead channels, calibration constants and slow control informations are described for this period. A detailed study about pixel noise determination and suppression is presented. Finally, the pixel detection efficiency is measured using cosmic muon rays. (author)

  1. High-resolution hybrid pixel sensors for the e+e- Tesla linear collider vertex tracker

    International Nuclear Information System (INIS)

    In order to fully exploit the physics potential of a future high-energy e+e- linear collider, a Vertex Tracker, providing high-resolution track reconstruction, is required. Hybrid silicon pixel sensors are an attractive option, for the sensor technology, due to their read-out speed and radiation hardness, favoured in the high-rate environment of the TESLA e+e- linear collider design, but have been so far limited by the achievable single point space resolution. In this paper, a conceptual design of the TESLA Vertex Tracker, based on a novel layout of hybrid pixel sensors with interleaved cells to improve their spatial resolution, is presented

  2. Front end optimization for the monolithic active pixel sensor of the ALICE Inner Tracking System upgrade

    International Nuclear Information System (INIS)

    ALICE plans to replace its Inner Tracking System during the second long shut down of the LHC in 2019 with a new 10 m2 tracker constructed entirely with monolithic active pixel sensors. The TowerJazz 180 nm CMOS imaging Sensor process has been selected to produce the sensor as it offers a deep pwell allowing full CMOS in-pixel circuitry and different starting materials. First full-scale prototypes have been fabricated and tested. Radiation tolerance has also been verified. In this paper the development of the charge sensitive front end and in particular its optimization for uniformity of charge threshold and time response will be presented

  3. Electron Pattern Recognition using trigger mode SOI pixel sensor for Advanced Compton Imaging

    International Nuclear Information System (INIS)

    Compton imaging is a useful method for localizing sub MeV to a few MeV gamma-rays and widely used for environmental and medical applications. The direction of recoiled electrons in Compton scattering process provides the additional information to limit the Compton cones and increases the sensitivity in the system. The capability of recoiled electron tracking using trigger-mode Silicon-On-Insulator (SOI) sensor is investigated with various radiation sources. The trigger-mode SOI sensor consists of 144 by 144 active pixels with 30 μm cells and the thickness of sensor is 500 μm. The sensor generates the digital output when it is hit by gamma-rays and 25 by 25 pixel pattern of surrounding the triggered pixel is readout to extract the recoiled electron track. The electron track is successfully observed for 60Co and 137Cs sources, which provides useful information for future electron tracking Compton camera

  4. Electron Pattern Recognition using trigger mode SOI pixel sensor for Advanced Compton Imaging

    Science.gov (United States)

    Shimazoe, K.; Yoshihara, Y.; Fairuz, A.; Koyama, A.; Takahashi, H.; Takeda, A.; Tsuru, T.; Arai, Y.

    2016-02-01

    Compton imaging is a useful method for localizing sub MeV to a few MeV gamma-rays and widely used for environmental and medical applications. The direction of recoiled electrons in Compton scattering process provides the additional information to limit the Compton cones and increases the sensitivity in the system. The capability of recoiled electron tracking using trigger-mode Silicon-On-Insulator (SOI) sensor is investigated with various radiation sources. The trigger-mode SOI sensor consists of 144 by 144 active pixels with 30 μm cells and the thickness of sensor is 500 μm. The sensor generates the digital output when it is hit by gamma-rays and 25 by 25 pixel pattern of surrounding the triggered pixel is readout to extract the recoiled electron track. The electron track is successfully observed for 60Co and 137Cs sources, which provides useful information for future electron tracking Compton camera.

  5. 320×240 Pixels CMOS Digital Image Sensor with Wide Dynamic Range

    Institute of Scientific and Technical Information of China (English)

    FANG Jie; WANG Jing-guang; HONG Zhi-liang

    2004-01-01

    A 320×240 CMOS image sensor is demonstrated,which is implemented by a standard 0.6 μm 2P2M CMOS process.For reducing the chip area,each 2×2-pixel block shares a sample/hold circuit,analog-to-digital converter and 1-b memory.The 2×2 pixel pitch has an area of 40 μm×40 μm and the fill factor is about 16%.While operating at a low frame rate,the sensor dissipates a very low power by power-management circuit making pixel-level comparators in an idle state.A digital correlated double sampling,which eliminates fixed pattern noise,improves SNR of the sensor, and multiple sampling operations make the sensor have a wide dynamic range.

  6. The silicon microstrip sensors of the ATLAS semiconductor tracker

    Science.gov (United States)

    Ahmad, A.; Albrechtskirchinger, Z.; Allport, P. P.; Alonso, J.; Andricek, L.; Apsimon, R. J.; Barr, A. J.; Bates, R. L.; Beck, G. A.; Bell, P. J.; Belymam, A.; Benes, J.; Berg, C. M.; Bernabeu, J.; Bethke, S.; Bingefors, N.; Bizzell, J. P.; Bohm, J.; Brenner, R.; Brodbeck, T. J.; Bruckman De Renstrom, P.; Buttar, C. M.; Campbell, D.; Carpentieri, C.; Carter, A. A.; Carter, J. R.; Charlton, D. G.; Casse, G.-L.; Chilingarov, A.; Cindro, V.; Ciocio, A.; Civera, J. V.; Clark, A. G.; Colijn, A.-P.; Costa, M. J.; Dabrowski, W.; Danielsen, K. M.; Dawson, I.; Demirkoz, B.; Dervan, P.; Dolezal, Z.; Dorholt, O.; Duerdoth, I. P.; Dwuznik, M.; Eckert, S.; Ekelöf, T.; Eklund, L.; Escobar, C.; Fasching, D.; Feld, L.; Ferguson, D. P. S.; Ferrere, D.; Fortin, R.; Foster, J. M.; Fox, H.; French, R.; Fromant, B. P.; Fujita, K.; Fuster, J.; Gadomski, S.; Gallop, B. J.; García, C.; García-Navarro, J. E.; Gibson, M. D.; Gonzalez, S.; Gonzalez-Sevilla, S.; Goodrick, M. J.; Gornicki, E.; Green, C.; Greenall, A.; Grigson, C.; Grillo, A. A.; Grosse-Knetter, J.; Haber, C.; Handa, T.; Hara, K.; Harper, R. S.; Hartjes, F. G.; Hashizaki, T.; Hauff, D.; Hessey, N. P.; Hill, J. C.; Hollins, T. I.; Holt, S.; Horazdovsky, T.; Hornung, M.; Hovland, K. M.; Hughes, G.; Huse, T.; Ikegami, Y.; Iwata, Y.; Jackson, J. N.; Jakobs, K.; Jared, R. C.; Johansen, L. G.; Jones, R. W. L.; Jones, T. J.; de Jong, P.; Joseph, J.; Jovanovic, P.; Kaplon, J.; Kato, Y.; Ketterer, C.; Kindervaag, I. M.; Kodys, P.; Koffeman, E.; Kohriki, T.; Kohout, Z.; Kondo, T.; Koperny, S.; van der Kraaij, E.; Kral, V.; Kramberger, G.; Kudlaty, J.; Lacasta, C.; Limper, M.; Linhart, V.; Llosá, G.; Lozano, M.; Ludwig, I.; Ludwig, J.; Lutz, G.; Macpherson, A.; McMahon, S. J.; Macina, D.; Magrath, C. A.; Malecki, P.; Mandić, I.; Martí-García, S.; Matsuo, T.; Meinhardt, J.; Mellado, B.; Mercer, I. J.; Mikestikova, M.; Mikuž, M.; Miñano, M.; Mistry, J.; Mitsou, V.; Modesto, P.; Mohn, B.; Molloy, S. D.; Moorhead, G.; Moraes, A.; Morgan, D.; Morone, M. C.; Morris, J.; Moser, H.-G.; Moszczynski, A.; Muijs, A. J. M.; Nagai, K.; Nakamura, Y.; Nakano, I.; Nicholson, R.; Niinikoski, T.; Nisius, R.; Ohsugi, T.; O'Shea, V.; Oye, O. K.; Parzefall, U.; Pater, J. R.; Pernegger, H.; Phillips, P. W.; Pospisil, S.; Ratoff, P. N.; Reznicek, P.; Richardson, J. D.; Richter, R. H.; Robinson, D.; Roe, S.; Ruggiero, G.; Runge, K.; Sadrozinski, H. F. W.; Sandaker, H.; Schieck, J.; Seiden, A.; Shinma, S.; Siegrist, J.; Sloan, T.; Smith, N. A.; Snow, S. W.; Solar, M.; Solberg, A.; Sopko, B.; Sospedra, L.; Spieler, H.; Stanecka, E.; Stapnes, S.; Stastny, J.; Stelzer, F.; Stradling, A.; Stugu, B.; Takashima, R.; Tanaka, R.; Taylor, G.; Terada, S.; Thompson, R. J.; Titov, M.; Tomeda, Y.; Tovey, D. R.; Turala, M.; Turner, P. R.; Tyndel, M.; Ullán, M.; Unno, Y.; Vickey, T.; Vos, M.; Wallny, R.; Weilhammer, P.; Wells, P. S.; Wilson, J. A.; Wolter, M.; Wormald, M.; Wu, S. L.; Yamashita, T.; Žontar, D.; Zsenei, A.

    2007-07-01

    This paper describes the AC-coupled, single-sided, p-in-n silicon microstrip sensors used in the Semiconductor Tracker (SCT) of the ATLAS experiment at the CERN Large Hadron Collider (LHC). The sensor requirements, specifications and designs are discussed, together with the qualification and quality assurance procedures adopted for their production. The measured sensor performance is presented, both initially and after irradiation to the fluence anticipated after 10 years of LHC operation. The sensors are now successfully assembled within the detecting modules of the SCT, and the SCT tracker is completed and integrated within the ATLAS Inner Detector. Hamamatsu Photonics Ltd. supplied 92.2% of the 15,392 installed sensors, with the remainder supplied by CiS.

  7. Investigation of properties of novel silicon pixel assemblies employing thin n-in-p sensors and 3D-integration

    Energy Technology Data Exchange (ETDEWEB)

    Weigell, Philipp

    2013-01-15

    Until the end of the 2020 decade the LHC programme will be defining the high energy frontier of particle physics. During this time, three upgrade steps of the accelerator are currently planned to further increase the luminosity and energy reach. In the course of these upgrades the specifications of several parts of the current LHC detectors will be exceeded. Especially, the innermost tracking detectors are challenged by the increasing track densities and the radiation damage. This thesis focuses on the implications for the ATLAS experiment. Here, around 2021/2, after having collected an integrated luminosity of around 300 fb{sup -1}, the silicon and gas detector components of the inner tracker will reach the end of their lifetime and will need to be replaced to ensure sufficient performance for continued running - especially if the luminosity is raised to about 5 x 10{sup 35} cm{sup -2}s{sup -1} as currently planned. An all silicon inner detector is foreseen to be installed. This upgrade demands cost effective pixel assemblies with a minimal material budget, a larger active area fraction as compared to the current detectors, and a higher granularity. Furthermore, the assemblies must be able to withstand received fluences up to 2 . 10{sup 16} n{sub eq}/cm{sup 2}. A new pixel assembly concept answering the challenges posed by the high instantaneous luminosities is investigated in this thesis. It employs five novel technologies, namely n-in-p pixel sensors, thin pixel sensors, slim edges with or without implanted sensor sides, and 3D-integration incorporating a new interconnection technology, named Solid Liquid InterDiffusion (SLID) as well as Inter-Chip-Vias (ICVs). n-in-p sensors are cost-effective, since they only need patterned processing on one side. Their performance before and after irradiation is investigated and compared to results obtained with currently used n-in-n sensors. Reducing the thickness of the sensors lowers the amount of multiple scattering

  8. Investigation of properties of novel silicon pixel assemblies employing thin n-in-p sensors and 3D-integration

    International Nuclear Information System (INIS)

    Until the end of the 2020 decade the LHC programme will be defining the high energy frontier of particle physics. During this time, three upgrade steps of the accelerator are currently planned to further increase the luminosity and energy reach. In the course of these upgrades the specifications of several parts of the current LHC detectors will be exceeded. Especially, the innermost tracking detectors are challenged by the increasing track densities and the radiation damage. This thesis focuses on the implications for the ATLAS experiment. Here, around 2021/2, after having collected an integrated luminosity of around 300 fb-1, the silicon and gas detector components of the inner tracker will reach the end of their lifetime and will need to be replaced to ensure sufficient performance for continued running - especially if the luminosity is raised to about 5 x 1035 cm-2s-1 as currently planned. An all silicon inner detector is foreseen to be installed. This upgrade demands cost effective pixel assemblies with a minimal material budget, a larger active area fraction as compared to the current detectors, and a higher granularity. Furthermore, the assemblies must be able to withstand received fluences up to 2 . 1016 neq/cm2. A new pixel assembly concept answering the challenges posed by the high instantaneous luminosities is investigated in this thesis. It employs five novel technologies, namely n-in-p pixel sensors, thin pixel sensors, slim edges with or without implanted sensor sides, and 3D-integration incorporating a new interconnection technology, named Solid Liquid InterDiffusion (SLID) as well as Inter-Chip-Vias (ICVs). n-in-p sensors are cost-effective, since they only need patterned processing on one side. Their performance before and after irradiation is investigated and compared to results obtained with currently used n-in-n sensors. Reducing the thickness of the sensors lowers the amount of multiple scattering within the tracking system and leads to higher

  9. Development of Fast and High Precision CMOS Pixel Sensors for an ILC Vertex Detector

    OpenAIRE

    Hu-Guo, Christine; Collaboration, IPHC; Collaboration, IRFU

    2010-01-01

    The development of CMOS pixel sensors with column parallel read-out and integrated zero-suppression has resulted in a full size, nearly 1 Megapixel, prototype with ~100 \\mu s read-out time. Its performances are quite close to the ILD vertex detector specifications, showing that the sensor architecture can presumably be evolved to meet these specifications exactly. Starting from the existing architecture and achieved performances, the paper will expose the details of how the sensor will be evo...

  10. Fast Contour-Tracing Algorithm Based on a Pixel-Following Method for Image Sensors.

    Science.gov (United States)

    Seo, Jonghoon; Chae, Seungho; Shim, Jinwook; Kim, Dongchul; Cheong, Cheolho; Han, Tack-Don

    2016-01-01

    Contour pixels distinguish objects from the background. Tracing and extracting contour pixels are widely used for smart/wearable image sensor devices, because these are simple and useful for detecting objects. In this paper, we present a novel contour-tracing algorithm for fast and accurate contour following. The proposed algorithm classifies the type of contour pixel, based on its local pattern. Then, it traces the next contour using the previous pixel's type. Therefore, it can classify the type of contour pixels as a straight line, inner corner, outer corner and inner-outer corner, and it can extract pixels of a specific contour type. Moreover, it can trace contour pixels rapidly because it can determine the local minimal path using the contour case. In addition, the proposed algorithm is capable of the compressing data of contour pixels using the representative points and inner-outer corner points, and it can accurately restore the contour image from the data. To compare the performance of the proposed algorithm to that of conventional techniques, we measure their processing time and accuracy. In the experimental results, the proposed algorithm shows better performance compared to the others. Furthermore, it can provide the compressed data of contour pixels and restore them accurately, including the inner-outer corner, which cannot be restored using conventional algorithms. PMID:27005632

  11. Monolithic Active Pixel Sensors (MAPS) in a quadruple well technology for nearly 100% fill factor and full CMOS pixels

    CERN Document Server

    Ballin, J A; Dauncey, P D; Magnan, A -M; Mikami, Y; Miller, O D; Noy, M; Rajovic, V; Stanitzki, M M; Stefanov, K D; Turchetta, R; Tyndel, M; Villani, E G; Watson, N K; Wilson, J A

    2008-01-01

    In this paper we present a novel, quadruple well process developed in a modern 0.18mu CMOS technology called INMAPS. On top of the standard process, we have added a deep P implant that can be used to form a deep P-well and provide screening of N-wells from the P-doped epitaxial layer. This prevents the collection of radiation-induced charge by unrelated N-wells, typically ones where PMOS transistors are integrated. The design of a sensor specifically tailored to a particle physics experiment is presented, where each 50mu pixel has over 150 PMOS and NMOS transistors. The sensor has been fabricated in the INMAPS process and first experimental evidence of the effectiveness of this process on charge collection is presented, showing a significant improvement in efficiency.

  12. Monolithic Active Pixel Sensors (MAPS in a Quadruple Well Technology for Nearly 100% Fill Factor and Full CMOS Pixels

    Directory of Open Access Journals (Sweden)

    John Allan Wilson

    2008-09-01

    Full Text Available In this paper we present a novel, quadruple well process developed in a modern 0.18 mm CMOS technology called INMAPS. On top of the standard process, we have added a deep P implant that can be used to form a deep P-well and provide screening of N-wells from the P-doped epitaxial layer. This prevents the collection of radiation-induced charge by unrelated N-wells, typically ones where PMOS transistors are integrated. The design of a sensor specifically tailored to a particle physics experiment is presented, where each 50 mm pixel has over 150 PMOS and NMOS transistors. The sensor has been fabricated in the INMAPS process and first experimental evidence of the effectiveness of this process on charge collection is presented, showing a significant improvement in efficiency.

  13. Design and implementation of fast and sparsified readout for Monolithic Active Pixel Sensors

    OpenAIRE

    Torheim, Olav

    2010-01-01

    This thesis focuses on the development of smart pixel readout architectures that should ultimately be targeted for the Micro-Vertex Detector (MVD) of the CBM (Compressed Baryonic Matter) experiment. The technical challenge of building a pixel detector for this experiment is to design particle sensors capable of meeting at the same time very strict requirements on both spatial resolution, time resolution and radiation hardness. The MVD is required to obtain data for the open ...

  14. Performance of a Fast Binary Readout CMOS Active Pixel Sensor Chip Designed for Charged Particle Detection

    OpenAIRE

    Degerli, Y.; Besancon, M.; Besson, A.; Claus, G; Deptuch, G; Dulinski, W.; Fourches, N.; Goffe, M.; Himmi, A.; Li, Y.; Li, Y.; Lutz, P.; Orsini, F.; Szelezniak, M.

    2006-01-01

    We report on the performance of the MIMOSA8 (HiMAPS1) chip. The chip is a 128$, times ,$32 pixels array where 24 columns have discriminated binary outputs and eight columns analog test outputs. Offset correction techniques are used extensively in this chip to overcome process related mismatches. The array is divided in four blocks of pixels with different conversion factors and is controlled by a serially programmable sequencer. MIMOSA8 is a representative of the CMOS sensors development opti...

  15. Characterisation of a CMOS Active Pixel Sensor for use in the TEAM Microscope

    OpenAIRE

    Battaglia, Marco; Contarato, Devis; Denes, Peter; Doering, Dionisio; Duden, Thomas; Krieger, Brad; Giubilato, Piero; Gnani, Dario; Radmilovic, Velimir

    2010-01-01

    A 1M- and a 4M-pixel monolithic CMOS active pixel sensor with 9.5x9.5 micron^2 pixels have been developed for direct imaging in transmission electron microscopy as part of the TEAM project. We present the design and a full characterisation of the detector. Data collected with electron beams at various energies of interest in electron microscopy are used to determine the detector response. Data are compared to predictions of simulation. The line spread function measured with 80 keV and 300 keV...

  16. ALPIDE, the Monolithic Active Pixel Sensor for the ALICE ITS upgrade

    Science.gov (United States)

    Mager, M.

    2016-07-01

    A new 10 m2 inner tracking system based on seven concentric layers of Monolithic Active Pixel Sensors will be installed in the ALICE experiment during the second long shutdown of LHC in 2019-2020. The monolithic pixel sensors will be fabricated in the 180 nm CMOS Imaging Sensor process of TowerJazz. The ALPIDE design takes full advantage of a particular process feature, the deep p-well, which allows for full CMOS circuitry within the pixel matrix, while at the same time retaining the full charge collection efficiency. Together with the small feature size and the availability of six metal layers, this allowed a continuously active low-power front-end to be placed into each pixel and an in-matrix sparsification circuit to be used that sends only the addresses of hit pixels to the periphery. This approach led to a power consumption of less than 40 mWcm-2, a spatial resolution of around 5 μm, a peaking time of around 2 μs, while being radiation hard to some 1013 1 MeVneq /cm2, fulfilling or exceeding the ALICE requirements. Over the last years of R & D, several prototype circuits have been used to verify radiation hardness, and to optimize pixel geometry and in-pixel front-end circuitry. The positive results led to a submission of full-scale (3 cm×1.5 cm) sensor prototypes in 2014. They are being characterized in a comprehensive campaign that also involves several irradiation and beam tests. A summary of the results obtained and prospects towards the final sensor to instrument the ALICE Inner Tracking System are given.

  17. Design and characterization of novel monolithic pixel sensors for the ALICE ITS upgrade

    Energy Technology Data Exchange (ETDEWEB)

    Cavicchioli, C., E-mail: costanza.cavicchioli@cern.ch [CERN European Organization for Nuclear Research, CH-1211 Genève 23 (Switzerland); Chalmet, P.L. [MIND, Archamps Technopole, Saint-Julien-en-Genevois, Cedex 74166 (France); Giubilato, P. [Università and INFN, Padova (Italy); Hillemanns, H.; Junique, A.; Kugathasan, T.; Mager, M. [CERN European Organization for Nuclear Research, CH-1211 Genève 23 (Switzerland); Marin Tobon, C.A. [Valencia Polytechnic University, Valencia (Spain); Martinengo, P. [CERN European Organization for Nuclear Research, CH-1211 Genève 23 (Switzerland); Mattiazzo, S. [Università and INFN, Padova (Italy); Mugnier, H. [MIND, Archamps Technopole, Saint-Julien-en-Genevois, Cedex 74166 (France); Musa, L. [CERN European Organization for Nuclear Research, CH-1211 Genève 23 (Switzerland); Pantano, D. [Università and INFN, Padova (Italy); Rousset, J. [MIND, Archamps Technopole, Saint-Julien-en-Genevois, Cedex 74166 (France); Reidt, F. [CERN European Organization for Nuclear Research, CH-1211 Genève 23 (Switzerland); Physikalisches Institut, Ruprecht-Karls-Universitaet Heidelberg, Heidelberg (Germany); Riedler, P.; Snoeys, W. [CERN European Organization for Nuclear Research, CH-1211 Genève 23 (Switzerland); Van Hoorne, J.W. [CERN European Organization for Nuclear Research, CH-1211 Genève 23 (Switzerland); Technische Universitaet Wien, Vienna (Austria); Yang, P. [Central China Normal University CCNU, Wuhan (China)

    2014-11-21

    Within the R and D activities for the upgrade of the ALICE Inner Tracking System (ITS), Monolithic Active Pixel Sensors (MAPS) are being developed and studied, due to their lower material budget (∼0.3%X{sub 0} in total for each inner layer) and higher granularity (∼20μm×20μm pixels) with respect to the present pixel detector. This paper presents the design and characterization results of the Explorer0 chip, manufactured in the TowerJazz 180 nm CMOS Imaging Sensor process, based on a wafer with high-resistivity (ρ>1kΩcm) and 18 μm thick epitaxial layer. The chip is organized in two sub-matrices with different pixel pitches (20 μm and 30 μm), each of them containing several pixel designs. The collection electrode size and shape, as well as the distance between the electrode and the surrounding electronics, are varied; the chip also offers the possibility to decouple the charge integration time from the readout time, and to change the sensor bias. The charge collection properties of the different pixel variants implemented in Explorer0 have been studied using a {sup 55}Fe X-ray source and 1–5 GeV/c electrons and positrons. The sensor capacitance has been estimated, and the effect of the sensor bias has also been examined in detail. A second version of the Explorer0 chip (called Explorer1) has been submitted for production in March 2013, together with a novel circuit with in-pixel discrimination and a sparsified readout. Results from these submissions are also presented.

  18. Design and characterization of novel monolithic pixel sensors for the ALICE ITS upgrade

    International Nuclear Information System (INIS)

    Within the R and D activities for the upgrade of the ALICE Inner Tracking System (ITS), Monolithic Active Pixel Sensors (MAPS) are being developed and studied, due to their lower material budget (∼0.3%X0 in total for each inner layer) and higher granularity (∼20μm×20μm pixels) with respect to the present pixel detector. This paper presents the design and characterization results of the Explorer0 chip, manufactured in the TowerJazz 180 nm CMOS Imaging Sensor process, based on a wafer with high-resistivity (ρ>1kΩcm) and 18 μm thick epitaxial layer. The chip is organized in two sub-matrices with different pixel pitches (20 μm and 30 μm), each of them containing several pixel designs. The collection electrode size and shape, as well as the distance between the electrode and the surrounding electronics, are varied; the chip also offers the possibility to decouple the charge integration time from the readout time, and to change the sensor bias. The charge collection properties of the different pixel variants implemented in Explorer0 have been studied using a 55Fe X-ray source and 1–5 GeV/c electrons and positrons. The sensor capacitance has been estimated, and the effect of the sensor bias has also been examined in detail. A second version of the Explorer0 chip (called Explorer1) has been submitted for production in March 2013, together with a novel circuit with in-pixel discrimination and a sparsified readout. Results from these submissions are also presented

  19. A 128 × 128 Pixel Complementary Metal Oxide Semiconductor Image Sensor with an Improved Pixel Architecture for Detecting Modulated Light Signals

    Science.gov (United States)

    Yamamoto, Koji; Oya, Yu; Kagawa, Keiichiro; Nunoshita, Masahiro; Ohta, Jun; Watanabe, Kunihiro

    A complementary metal oxide semiconductor (CMOS) image sensor for the detection of modulated light under background illumination has been developed. When an object is illuminated by a modulated light source under background illumination the sensor enables the object alone to be captured. This paper describes improvements in pixel architecture for reducing fixed pattern noise (FPN) and improving the sensitivity of the image sensor. The improved 128 × 128 pixel CMOS image sensor with a column parallel analog-to-digital converter (ADC) circuit was fabricated using 0.35-mm CMOS technology. The resulting captured images are shown and the properties of improved pixel architecture are described. The image sensor has FPN of 1/28 that of the previous image sensor and an improved pixel architecture comprising a common in-pixel amp and a correlated double sampling (CDS) circuit. The use of a split photogate increases the sensitivity of the image sensor to 1.3 times that of the previous image sensor.

  20. A Low-Noise CMOS Pixel Direct Charge Sensor, Topmetal-II-

    CERN Document Server

    An, Mangmang; Gao, Chaosong; Han, Mikyung; Ji, Rong; Li, Xiaoting; Mei, Yuan; Sun, Quan; Sun, Xiangming; Wang, Kai; Xiao, Le; Xu, Nu; Yang, Ping; Zhou, Wei

    2016-01-01

    We report the design and characterization of a CMOS pixel direct charge sensor, Topmetal-II-, fabricated in a standard 0.35um CMOS Integrated Circuit process. The sensor utilizes exposed metal patches on top of each pixel to directly collect charge. Each pixel contains a low-noise charge-sensitive preamplifier to establish the analog signal and a discriminator with tunable threshold to generate hits. The analog signal from each pixel is accessible through time-shared multiplexing over the entire array. Hits are read out digitally through a column-based priority logic structure. Tests show that the sensor achieved a <15e- analog noise and a 200e- minimum threshold for digital readout per pixel. The sensor is capable of detecting both electrons and ions drifting in gas. These characteristics enable its use as the charge readout device in future Time Projection Chambers without gaseous gain mechanism, which has unique advantages in low background and low rate-density experiments.

  1. Prototypes for components of a control system for the ATLAS pixel detector at the HL-LHC

    International Nuclear Information System (INIS)

    In the years around 2020 an upgrade of the LHC to the HL-LHC is scheduled, which will increase the accelerator's instantaneous luminosity by a factor of 5 and the integrated luminosity by a factor of 10. In the context of this upgrade, the inner detector (including the pixel detector) of the ATLAS experiment will be replaced. This new pixel detector requires a specific control system which complies with strict requirements in terms of radiation hardness, material budget and space for the electronics in the ATLAS experiment. The University of Wuppertal is developing a concept for a DCS (Detector Control System) network consisting of two kinds of ASICs. The first ASIC is the DCS chip which is located on the pixel detector, very close to the interaction point. The second ASIC is the DCS Controller which is controlling 4×4 DCS chips from the outer regions of ATLAS via differential data lines. Both ASICs are manufactured in 130 nm deep sub-micron technology. We present results from reliability measurements under irradiation from new prototypes of components for the DCS network.

  2. Rigorous Three-dimension Electromagnetic Simulations and Optimization for CMOS Image Sensor pixels

    International Nuclear Information System (INIS)

    The size of pixels in complementary metal-oxide-semiconductor image sensor has steadily decreased during the last decade, which leads to a challenge on maintaining the pixels' optical performance. The diffraction effects result in increased spatial crosstalk and decreased optical efficiency, so rigorous simulation and optimization are important. FDTD method is used to simulate the optical performance and a diffuse-like source is used to reproduce real conditions. A commercial tool from Lumerical Solutions is used to do three-dimension FDTD simulation. The diffuse-like sources are simulated by the uniform sum of several focused beams characterized by a given f-number of the objective len. The typical 1.75μm, 1.45μm and 1.1μm pixels are simulated and analyzed. The results show that the optical efficiency of the pixels decreases dramatically when the pixels size scaling down. Several approaches to produce better device performance for sub-2um pixels are analyzed. Micro-lens optimization, dielectric stack height reduction can decrease the optical power loss and optical confinement realized by an air-gap can reduce the spatial crosstalk. The results show that the optical performances of the optimized 1.1μm pixel are comparable to those of conventional 1.75μm pixel.

  3. Fast Contour-Tracing Algorithm Based on a Pixel-Following Method for Image Sensors

    Directory of Open Access Journals (Sweden)

    Jonghoon Seo

    2016-03-01

    Full Text Available Contour pixels distinguish objects from the background. Tracing and extracting contour pixels are widely used for smart/wearable image sensor devices, because these are simple and useful for detecting objects. In this paper, we present a novel contour-tracing algorithm for fast and accurate contour following. The proposed algorithm classifies the type of contour pixel, based on its local pattern. Then, it traces the next contour using the previous pixel’s type. Therefore, it can classify the type of contour pixels as a straight line, inner corner, outer corner and inner-outer corner, and it can extract pixels of a specific contour type. Moreover, it can trace contour pixels rapidly because it can determine the local minimal path using the contour case. In addition, the proposed algorithm is capable of the compressing data of contour pixels using the representative points and inner-outer corner points, and it can accurately restore the contour image from the data. To compare the performance of the proposed algorithm to that of conventional techniques, we measure their processing time and accuracy. In the experimental results, the proposed algorithm shows better performance compared to the others. Furthermore, it can provide the compressed data of contour pixels and restore them accurately, including the inner-outer corner, which cannot be restored using conventional algorithms.

  4. Giga-Pixel Lensfree Holographic Microscopy and Tomography Using Color Image Sensors

    OpenAIRE

    Isikman, Serhan O.; Greenbaum, Alon; Luo, Wei; Coskun, Ahmet F.; Ozcan, Aydogan

    2012-01-01

    We report Giga-pixel lensfree holographic microscopy and tomography using color sensor-arrays such as CMOS imagers that exhibit Bayer color filter patterns. Without physically removing these color filters coated on the sensor chip, we synthesize pixel super-resolved lensfree holograms, which are then reconstructed to achieve ∼350 nm lateral resolution, corresponding to a numerical aperture of ∼0.8, across a field-of-view of ∼20.5 mm2. This constitutes a digital image with ∼0.7 Billion effecti...

  5. Atlas pixel opto-board production and analysis and optolink simulation studies

    International Nuclear Information System (INIS)

    At CERN, a Large collider will collide protons at high energies. There are four experiments being built to study the particle properties from the collision. The ATLAS experiment is the largest. It has many sub detectors among which is the Pixel detector which is the innermost part. The Pixel detector has eighty million channels that have to be read out. An optical link is utilized for the read out. It has optical to electronic interfaces both on the detector and off the detector at the counting room. The component on the detector in called the opto-board. This work discusses the production testing of the opto-boards to be installed on the detector. A total of 300 opto-boards including spares have been produced. The production was done in three laboratories among which is the laboratory at the University of Wuppertal which had the responsibility of Post production testing of all the one third of the total opto-boards. The results are discussed in this work. The analysis of the results from the total production process has been done in the scope of this work as well. In addition to the production, a study by simulation of the communication links optical signal has been done. This has enabled an assessment of the sufficiency of the optical signal against the transmission attenuation and irradiation degradation. A System Test set up has been put up at Wuppertal to enhance general studies for better understanding of the Pixel read out system. Among other studies is the study of the timing parameters behavior of the System which has been done in this work and enhanced by a simulation. These parameters are namely the mark to space ratio and the fine delay and their relatedness during the optolink tuning. A bit error rate test based on the System has also been done which enabled assessment of the transmission quality utilizing the tools inbuilt in the System Test. These results have been presented in this work. (orig.)

  6. Development of N+ in P pixel sensors for a high-luminosity large hadron collider

    Science.gov (United States)

    Kamada, Shintaro; Yamamura, Kazuhisa; Unno, Yoshinobu; Ikegami, Yoichi

    2014-11-01

    Hamamatsu Photonics K. K. is developing an N+ in a p planar pixel sensor with high radiation tolerance for the high-luminosity large hadron collider (HL-LHC). The N+ in the p planar pixel sensor is a candidate for the HL-LHC and offers the advantages of high radiation tolerance at a reasonable price compared with the N+ in an n planar sensor, the three-dimensional sensor, and the diamond sensor. However, the N+ in the p planar pixel sensor still presents some problems that need to be solved, such as its slim edge and the danger of sparks between the sensor and readout integrated circuit. We are now attempting to solve these problems with wafer-level processes, which is important for mass production. To date, we have obtained a 250-μm edge with an applied bias voltage of 1000 V. To protect against high-voltage sparks from the edge, we suggest some possible designs for the N+ edge.

  7. Development of N+ in P pixel sensors for a high-luminosity large hadron collider

    Energy Technology Data Exchange (ETDEWEB)

    Kamada, Shintaro, E-mail: skamada@ssd.hpk.co.jp [Hamamatsu Photonics, 1126-1 Ichino-cho, Hamamatsu City 435-8558 (Japan); Yamamura, Kazuhisa [Hamamatsu Photonics, 1126-1 Ichino-cho, Hamamatsu City 435-8558 (Japan); Unno, Yoshinobu; Ikegami, Yoichi [Institute of Particle and Nuclear Study, KEK, Oho 1-1, Ibaraki, Tsukuba 305-0801 (Japan)

    2014-11-21

    Hamamatsu Photonics K. K. is developing an N+ in a p planar pixel sensor with high radiation tolerance for the high-luminosity large hadron collider (HL-LHC). The N+ in the p planar pixel sensor is a candidate for the HL-LHC and offers the advantages of high radiation tolerance at a reasonable price compared with the N+ in an n planar sensor, the three-dimensional sensor, and the diamond sensor. However, the N+ in the p planar pixel sensor still presents some problems that need to be solved, such as its slim edge and the danger of sparks between the sensor and readout integrated circuit. We are now attempting to solve these problems with wafer-level processes, which is important for mass production. To date, we have obtained a 250-μm edge with an applied bias voltage of 1000 V. To protect against high-voltage sparks from the edge, we suggest some possible designs for the N+ edge. - Highlights: • We achieved a tolerance of 1000 V with a 250-μm edge by Al2O3 side wall passivation. • Above is a wafer process and suitable for mass production. • For edge-spark protection, we suggest N+ edge with an isolation.

  8. Development of N+ in P pixel sensors for a high-luminosity large hadron collider

    International Nuclear Information System (INIS)

    Hamamatsu Photonics K. K. is developing an N+ in a p planar pixel sensor with high radiation tolerance for the high-luminosity large hadron collider (HL-LHC). The N+ in the p planar pixel sensor is a candidate for the HL-LHC and offers the advantages of high radiation tolerance at a reasonable price compared with the N+ in an n planar sensor, the three-dimensional sensor, and the diamond sensor. However, the N+ in the p planar pixel sensor still presents some problems that need to be solved, such as its slim edge and the danger of sparks between the sensor and readout integrated circuit. We are now attempting to solve these problems with wafer-level processes, which is important for mass production. To date, we have obtained a 250-μm edge with an applied bias voltage of 1000 V. To protect against high-voltage sparks from the edge, we suggest some possible designs for the N+ edge. - Highlights: • We achieved a tolerance of 1000 V with a 250-μm edge by Al2O3 side wall passivation. • Above is a wafer process and suitable for mass production. • For edge-spark protection, we suggest N+ edge with an isolation

  9. Submission of the First Full Scale Prototype Chip for Upgraded ATLAS Pixel Detector at LHC, FE-I4A

    CERN Document Server

    Barbero, M; The ATLAS collaboration; Beccherle, R; Darbo, G; Dube, S; Elledge, D; Fleury, J; Fougeron, D; Garcia-Sciveres, M; Gensolen, F; Gnani, D; Gromov, V; Jensen, F; Hemperek, T; Karagounis, M; Kluit, R; Kruth, A; Mekkaoui, A; Menouni, M; Schipper, JD; Wermes, N; Zivkovic, V

    2010-01-01

    A new ATLAS pixel chip FE-I4 is being developed for use in upgraded LHC luminosity environments, including the near-term Insertable B-Layer (IBL) upgrade. FE-I4 is designed in a 130nm CMOS technology, presenting advantages in terms of radiation tolerance and digital logic density compared to the 250nm CMOS technology used for the current ATLAS pixel IC, FE-I3. The FE-I4 architecture is based on an array of 80x336 pixels, each 50x250um^2, consisting of analog and digital sections. In the summer 2010, a first full scale prototype FE-I4A was submitted for an engineering run. This IC features the full scale pixel array as well as the complex periphery of the future full-size FE-I4. The FE-I4A contains also various extra test features which should prove very useful for the chip characterization, but deviate from the needs for standard operation of the final FE-I4 for IBL. In this paper, focus will be brought to the various features implemented in the FE-I4A submission, while also underlining the main differences b...

  10. High dynamic range CMOS image sensor with pixel level ADC and in-situ image enhancement

    Science.gov (United States)

    Harton, Austin V.; Ahmed, Mohamed I.; Beuhler, Allyson; Castro, Francisco; Dawson, Linda M.; Herold, Barry W.; Kujawa, Gregory; Lee, King F.; Mareachen, Russell D.; Scaminaci, Tony J.

    2005-03-01

    We describe a CMOS image sensor with pixel level analog to digital conversion (ADC) having high dynamic range (>100db) and the capability of performing many image processing functions at the pixel level during image capture. The sensor has a 102x98 pixel array and is implemented in a 0.18um CMOS process technology. Each pixel is 15.5um x15.5um with 15% fill factor and is comprised of a comparator, two 10 bit memory registers and control logic. A digital to analog converter and system processor are located off-chip. The photodetector produces a photocurrent yielding a photo-voltage proportional to the impinging light intensity. Once the photo-voltage is less than a predetermined global reference voltage; a global code value is latched into the pixel data buffer. This process prevents voltage saturation resulting in high dynamic range imaging. Upon completion of image capture, a digital representation of the image exists at the pixel array, thereby, allowing image data to be accessed in a parallel fashion from the focal plane array. It is demonstrated that by appropriate variation of the global reference voltage with time, it is possible to perform, during image capture, thresholding and image enhancement operations, such as, contrast stretching in a parallel manner.

  11. A CMOS Energy Harvesting and Imaging (EHI) Active Pixel Sensor (APS) Imager for Retinal Prosthesis.

    Science.gov (United States)

    Ay, S U

    2011-12-01

    A CMOS image sensor capable of imaging and energy harvesting on same focal plane is presented for retinal prosthesis. The energy harvesting and imaging (EHI) active pixel sensor (APS) imager was designed, fabricated, and tested in a standard 0.5 μm CMOS process. It has 54 × 50 array of 21 × 21 μm(2) EHI pixels, 10-bit supply boosted (SB) SAR ADC, and charge pump circuits consuming only 14.25 μW from 1.2 V and running at 7.4 frames per second. The supply boosting technique (SBT) is used in an analog signal chain of the EHI imager. Harvested solar energy on focal plane is stored on an off-chip capacitor with the help of a charge pump circuit with better than 70% efficiency. Energy harvesting efficiency of the EHI pixel was measured at different light levels. It was 9.4% while producing 0.41 V open circuit voltage. The EHI imager delivers 3.35 μW of power was delivered to a resistive load at maximum power point operation. The measured pixel array figure of merit (FoM) was 1.32 pW/frame/pixel while imager figure of merit (iFoM) including whole chip power consumption was 696 fJ/pixel/code for the EHI imager. PMID:23852551

  12. Experience with 3D integration technologies in the framework of the ATLAS pixel detector upgrade for the HL-LHC

    CERN Document Server

    Aruntinov, D; Gonella, L; Hemperek, T; Hügging, F; Krüger, H; Wermes, N; Breugnon, P; Chantepie, B; Clemens, J.C; Fei, R; Fougeron, D; Godiot, S; Pangaud, P; Rozanov, A; Garcia-Sciveres, M; Mekkaoui, A

    2013-01-01

    3D technologies are investigated for the upgrade of the ATLAS pixel detector at the HL-LHC. R&D focuses on both, IC design in 3D, as well as on post-processing 3D technologies such as Through Silicon Via (TSV). The first one uses a so-called via first technology, featuring the insertion of small aspect ratio TSV at the pixel level. As discussed in the paper, this technology can still present technical challenges for the industrial partners. The second one consists of etching the TSV via last. This technology is investigated to enable 4-side abuttable module concepts, using today's pixel detector technology. Both approaches are presented in this paper and results from first available prototypes are discussed.

  13. Measurements and TCAD simulation of novel ATLAS planar pixel detector structures for the HL-LHC upgrade

    CERN Document Server

    Nellist, C; Gkougkousis, E; Lounis, A

    2015-01-01

    The LHC accelerator complex will be upgraded between 2020-2022, to the High-Luminosity-LHC, to considerably increase statistics for the various physics analyses. To operate under these challenging new conditions, and maintain excellent performance in track reconstruction and vertex location, the ATLAS pixel detector must be substantially upgraded and a full replacement is expected. Processing techniques for novel pixel designs are optimised through characterisation of test structures in a clean room and also through simulations with Technology Computer Aided Design (TCAD). A method to study non-perpendicular tracks through a pixel device is discussed. Comparison of TCAD simulations with Secondary Ion Mass Spectrometry (SIMS) measurements to investigate the doping profile of structures and validate the simulation process is also presented.

  14. Measurements and TCAD simulation of novel ATLAS planar pixel detector structures for the HL-LHC upgrade

    International Nuclear Information System (INIS)

    The LHC accelerator complex will be upgraded between 2020–2022, to the High-Luminosity-LHC, to considerably increase statistics for the various physics analyses. To operate under these challenging new conditions, and maintain excellent performance in track reconstruction and vertex location, the ATLAS pixel detector must be substantially upgraded and a full replacement is expected. Processing techniques for novel pixel designs are optimised through characterisation of test structures in a clean room and also through simulations with Technology Computer Aided Design (TCAD). A method to study non-perpendicular tracks through a pixel device is discussed. Comparison of TCAD simulations with Secondary Ion Mass Spectrometry (SIMS) measurements to investigate the doping profile of structures and validate the simulation process is also presented

  15. Design and characterization of novel monolithic pixel sensors for the ALICE ITS upgrade

    CERN Document Server

    Cavicchioli, C; Giubilato, P; Hillemanns, H; Junique, A; Kugathasan, T; Mager, M; Marin Tobon, C A; Martinengo, P; Mattiazzo, S; Mugnier, H; Musa, L; Pantano, D; Rousset, J; Reidt, F; Riedler, P; Snoeys, W; Van Hoorne, J W; Yang, P

    2014-01-01

    Within the R&D activities for the upgrade of the ALICE Inner Tracking System (ITS), Monolithic Active Pixel Sensors (MAPS) are being developed and studied, due to their lower material budget (~0.3%X0~0.3%X0 in total for each inner layer) and higher granularity (View the MathML source~20μm×20μm pixels) with respect to the present pixel detector. This paper presents the design and characterization results of the Explorer0 chip, manufactured in the TowerJazz 180 nm CMOS Imaging Sensor process, based on a wafer with high-resistivity View the MathML source(ρ>1kΩcm) and 18 μm thick epitaxial layer. The chip is organized in two sub-matrices with different pixel pitches (20 μm and 30 μm), each of them containing several pixel designs. The collection electrode size and shape, as well as the distance between the electrode and the surrounding electronics, are varied; the chip also offers the possibility to decouple the charge integration time from the readout time, and to change the sensor bias. The charge c...

  16. Experience on 3D Silicon Sensors for ATLAS IBL

    CERN Document Server

    Darbo, G; The ATLAS collaboration

    2014-01-01

    To extend the physics reach of the Large Hadron Collider (LHC), upgrades to the accelerator are planned which will increase the peak luminosity by a factor 5-10. To cope with the increased occupancy and radiation damage, the ATLAS experiment plans to introduce an all-silicon inner tracker with the high luminosity upgrade (HL-LHC). The detector proximity to the interaction point will require new radiation hard technologies for both sensors and front end electronics. 3D silicon sensors, where plasma micromachining is used to etch deep narrow apertures in the silicon substrate to form electrodes of PIN junctions, represent possible solutions for inner layers. Based on the gained experience with 3D silicon sensors for the ATLAS IBL project and the on-going developments on light materials, interconnectivity and cooling, we will discuss possible solutions to these requirements as well as key design aspects and device fabrication plans.

  17. R&D for the local support structure and cooling channel for the ATLAS PIXEL Detector Insertable B-Layer (IBL)

    CERN Document Server

    Coelli, S; The ATLAS collaboration

    2010-01-01

    ABSTRACT: The scope of the present R&D is to develop an innovative support, with an integrated cooling and based on carbon composites, for the electronic sensors of the Silicon Pixel Tracker, to be installed into the ATLAS Experiment on the Large Hadron Collider at CERN. The inner layer of the detector is installed immediately outside the Beryllium beam pipe at a distance of 50 mm from the Interaction Point, where the high energy protons collide: the intense radiation field induce a radiation damage on the sensors so that a cooling system is necessary to remove the electrical power dissipated as heat, maintaining the sensor temperature sufficiently low. The task of the support system is to hold the detector modules in positions with high accuracy, minimizing the deformation induced by the cooling; this must be done with the lower possible mass because there are tight requirements in terms of material budget. An evaporative boiling system to remove the power dissipated by the sensors is incorporated in the...

  18. Performance of a novel wafer scale CMOS active pixel sensor for bio-medical imaging

    OpenAIRE

    Esposito, M; Anaxagoras, T; Konstantinidis, AC; Zheng, Y.; Speller, RD; Evans, PM; Allinson, NM; Wells, K.

    2014-01-01

    Recently CMOS Active Pixels Sensors (APSs) have become a valuable alternative to amorphous Silicon and Selenium Flat Panel Imagers (FPIs) in bio-medical imaging applications. CMOS APSs can now be scaled up to the standard 20 cm diameter wafer size by means of a reticle stitching block process. However despite wafer scale CMOS APS being monolithic, sources of non-uniformity of response and regional variations can persist representing a significant challenge for wafer scale sensor response. Non...

  19. A DVP-Based Bridge Architecture to Randomly Access Pixels of High-Speed Image Sensors

    OpenAIRE

    Khan TareqHasan; Wahid KhanA

    2011-01-01

    A design of a novel bridge is proposed to interface digital-video-port (DVP) compatible image sensors with popular microcontrollers. Most commercially available CMOS image sensors send image data at high speed and in a row-by-row fashion. On the other hand, commercial microcontrollers run at relatively slower speed, and many embedded system applications need random access of pixel values. Moreover, commercial microcontrollers may not have sufficient internal memory to store a complete image ...

  20. Characterisation of a Thin Fully-Depleted SOI Pixel Sensor with Soft X-ray Radiation

    CERN Document Server

    Battaglia, Marco; Celestre, Richard; Contarato, Devis; Denes, Peter; Mattiazzo, Serena; Tindall, Craig

    2011-01-01

    This paper presents the results of the characterisation of a back-illuminated pixel sensor manufactured in Silicon-On-Insulator technology on a high-resistivity substrate with soft X-rays. The sensor is thinned and a thin Phosphor layer contact is implanted on the back-plane. The response to X-rays from 2.12 up to 8.6 keV is evaluated with fluorescence radiation at the LBNL Advanced Light Source.

  1. Multi-pixel readout of transition-edge sensors using a multi-input SQUID

    International Nuclear Information System (INIS)

    We propose a new method to read out signals from a TES (superconducting Transition-Edge Sensor) calorimeter array with a single or a small number of SQUIDs. Since phonon noise and Johnson noise of a calorimeter can be made very small in these calorimeters, an increase in noise, thus a degradation of energy resolution by adding signals from plural pixels together at some stage of signal processing may be acceptable for some applications of TES calorimeters. We propose to use a SQUID with multi-input coils which will sense signals from different pixels. The input coils of a SQUID are electrically well-isolated from each other. The pixel that generates a signal can be identified by utilizing additional information, such as the pulse shape. We studied the feasibility of this method with analysis and simulations, and show for example, that a 16x16 pixel array can be read out with 16 SQUIDs

  2. 1T Pixel Using Floating-Body MOSFET for CMOS Image Sensors

    Directory of Open Access Journals (Sweden)

    Guo-Neng Lu

    2009-01-01

    Full Text Available We present a single-transistor pixel for CMOS image sensors (CIS. It is a floating-body MOSFET structure, which is used as photo-sensing device and source-follower transistor, and can be controlled to store and evacuate charges. Our investigation into this 1T pixel structure includes modeling to obtain analytical description of conversion gain. Model validation has been done by comparing theoretical predictions and experimental results. On the other hand, the 1T pixel structure has been implemented in different configurations, including rectangular-gate and ring-gate designs, and variations of oxidation parameters for the fabrication process. The pixel characteristics are presented and discussed.

  3. Studies on irradiated pixel detectors for the ATLAS IBL and HL-LHC upgrade

    CERN Document Server

    AUTHOR|(INSPIRE)INSPIRE-00371978; Gößling, Claus; Pernegger, Heinz

    The constant demand for higher luminosity in high energy physics is the reason for the continuous effort to adapt the accelerators and the experiments. The upgrade program for the experiments and the accelerators at CERN already includes several expansion stages of the Large Hadron Collider (LHC) which will increase the luminosity and the energy of the accelerator. Simultaneously the LHC experiments prepare the individual sub-detectors for the increasing demands in the coming years. Especially the tracking detectors have to cope with fluence levels unprecedented for high energy physics experiments. Correspondingly to the fluence increases the impact of the radiation damage which reduces the life time of the detectors by decreasing the detector performance and efficiency. To cope with this effect new and more radiation hard detector concepts become necessary to extend the life time. This work concentrates on the impact of radiation damage on the pixel sensor technologies to be used in the next upgrade of the ...

  4. Photon small-field measurements with a CMOS active pixel sensor

    International Nuclear Information System (INIS)

    In this work the dosimetric performance of CMOS active pixel sensors for the measurement of small photon beams is presented. The detector used consisted of an array of 520  × 520 pixels on a 25 µm pitch. Dosimetric parameters measured with this sensor were compared with data collected with an ionization chamber, a film detector and GEANT4 Monte Carlo simulations. The sensor performance for beam profiles measurements was evaluated for field sizes of 0.5  × 0.5 cm2. The high spatial resolution achieved with this sensor allowed the accurate measurement of profiles, beam penumbrae and field size under lateral electronic disequilibrium. Field size and penumbrae agreed within 5.4% and 2.2% respectively with film measurements. Agreements with ionization chambers better than 1.0% were obtained when measuring tissue-phantom ratios. Output factor measurements were in good agreement with ionization chamber and Monte Carlo simulation. The data obtained from this imaging sensor can be easily analyzed to extract dosimetric information. The results presented in this work are promising for the development and implementation of CMOS active pixel sensors for dosimetry applications. (paper)

  5. Photon small-field measurements with a CMOS active pixel sensor

    Science.gov (United States)

    Jiménez Spang, F.; Rosenberg, I.; Hedin, E.; Royle, G.

    2015-06-01

    In this work the dosimetric performance of CMOS active pixel sensors for the measurement of small photon beams is presented. The detector used consisted of an array of 520  × 520 pixels on a 25 µm pitch. Dosimetric parameters measured with this sensor were compared with data collected with an ionization chamber, a film detector and GEANT4 Monte Carlo simulations. The sensor performance for beam profiles measurements was evaluated for field sizes of 0.5  × 0.5 cm2. The high spatial resolution achieved with this sensor allowed the accurate measurement of profiles, beam penumbrae and field size under lateral electronic disequilibrium. Field size and penumbrae agreed within 5.4% and 2.2% respectively with film measurements. Agreements with ionization chambers better than 1.0% were obtained when measuring tissue-phantom ratios. Output factor measurements were in good agreement with ionization chamber and Monte Carlo simulation. The data obtained from this imaging sensor can be easily analyzed to extract dosimetric information. The results presented in this work are promising for the development and implementation of CMOS active pixel sensors for dosimetry applications.

  6. A high frame rate, 16 million pixels, radiation hard CMOS sensor

    Science.gov (United States)

    Guerrini, N.; Turchetta, R.; Van Hoften, G.; Henderson, R.; McMullan, G.; Faruqi, A. R.

    2011-03-01

    CMOS sensors provide the possibility of designing detectors for a large variety of applications with all the benefits and flexibility of the widely used CMOS process. In this paper we describe a novel CMOS sensor designed for transmission electron microscopy. The overall design consists of a large 61 × 63 mm2 silicon area containing 16 million pixels arranged in a 4K × 4K array, with radiation hard geometry. All this is combined with a very fast readout, the possibility of region of interest (ROI) readout, pixel binning with consequent frame rate increase and a dynamic range close to 12 bits. The high frame rate has been achieved using 32 parallel analogue outputs each one operating at up to 20 MHz. Binning of pixels can be controlled externally and the flexibility of the design allows several possibilities, such as 2 × 2 or 4 × 4 binning. Other binning configurations where the number of rows and the number of columns are not equal, such as 2 × 1 or 2 × 4, are also possible. Having control of the CMOS design allowed us to optimise the pixel design, in particular with regard to its radiation hardness, and to make optimum choices in the design of other regions of the final sensor. An early prototype was also designed with a variety of geometries in order to optimise the readout structure and these are presented. The sensor was manufactured in a 0.35 μm standard CMOS process.

  7. A 512x512 CMOS Monolithic Active Pixel Sensor with integrated ADCs for space science

    International Nuclear Information System (INIS)

    In the last few years, CMOS sensors have become widely used for consumer applications, but little has been done for scientific instruments. In this paper we present the design and experimental characterisation of a Monolithic Active Pixel Sensor (MAPS) intended for a space science application. The sensor incorporates a 525x525 array of pixels on a 25 μm pitch. Each pixel contains a detector together with three transistors that are used for pixel reset, pixel selection and charge-to-voltage conversion. The detector consists of four n-well/p-substrate diodes combining optimum charge collection and low noise performance. The array readout is column-parallel with adjustable gain column amplifiers and a 10-bit single slope ADC. Data conversion takes place simultaneously for all the 525 pixels in one row. The ADC slope can be adjusted in order to give the best dynamic range for a given brightness of a scene. The digitised data are output on a 10-bit bus at 3 MHz. An on-chip state machine generates all of the control signals needed for the readout. All of the bias currents and voltages are generated on chip by a DAC that is programmable through an I2C compatible interface. The sensor was designed and fabricated on a standard 0.5 μm CMOS technology. The overall die size is 16.7 mmx19.9 mm including the associated readout electronics and bond pads. Preliminary test results show that the full-scale design works well, meeting the Star Tracker requirements with less than 1-bit noise, good linearity and good optical performance

  8. A 512×512 CMOS Monolithic Active Pixel Sensor with integrated ADCs for space science

    Science.gov (United States)

    Prydderch, M. L.; Waltham, N. J.; Turchetta, R.; French, M. J.; Holt, R.; Marshall, A.; Burt, D.; Bell, R.; Pool, P.; Eyles, C.; Mapson-Menard, H.

    2003-10-01

    In the last few years, CMOS sensors have become widely used for consumer applications, but little has been done for scientific instruments. In this paper we present the design and experimental characterisation of a Monolithic Active Pixel Sensor (MAPS) intended for a space science application. The sensor incorporates a 525×525 array of pixels on a 25 μm pitch. Each pixel contains a detector together with three transistors that are used for pixel reset, pixel selection and charge-to-voltage conversion. The detector consists of four n-well/p-substrate diodes combining optimum charge collection and low noise performance. The array readout is column-parallel with adjustable gain column amplifiers and a 10-bit single slope ADC. Data conversion takes place simultaneously for all the 525 pixels in one row. The ADC slope can be adjusted in order to give the best dynamic range for a given brightness of a scene. The digitised data are output on a 10-bit bus at 3 MHz. An on-chip state machine generates all of the control signals needed for the readout. All of the bias currents and voltages are generated on chip by a DAC that is programmable through an I 2C compatible interface. The sensor was designed and fabricated on a standard 0.5 μm CMOS technology. The overall die size is 16.7 mm×19.9 mm including the associated readout electronics and bond pads. Preliminary test results show that the full-scale design works well, meeting the Star Tracker requirements with less than 1-bit noise, good linearity and good optical performance.

  9. Compact SPAD-Based Pixel Architectures for Time-Resolved Image Sensors.

    Science.gov (United States)

    Perenzoni, Matteo; Pancheri, Lucio; Stoppa, David

    2016-01-01

    This paper reviews the state of the art of single-photon avalanche diode (SPAD) image sensors for time-resolved imaging. The focus of the paper is on pixel architectures featuring small pixel size (20%) as a key enabling technology for the successful implementation of high spatial resolution SPAD-based image sensors. A summary of the main CMOS SPAD implementations, their characteristics and integration challenges, is provided from the perspective of targeting large pixel arrays, where one of the key drivers is the spatial uniformity. The main analog techniques aimed at time-gated photon counting and photon timestamping suitable for compact and low-power pixels are critically discussed. The main features of these solutions are the adoption of analog counting techniques and time-to-analog conversion, in NMOS-only pixels. Reliable quantum-limited single-photon counting, self-referenced analog-to-digital conversion, time gating down to 0.75 ns and timestamping with 368 ps jitter are achieved. PMID:27223284

  10. Compact SPAD-Based Pixel Architectures for Time-Resolved Image Sensors

    Directory of Open Access Journals (Sweden)

    Matteo Perenzoni

    2016-05-01

    Full Text Available This paper reviews the state of the art of single-photon avalanche diode (SPAD image sensors for time-resolved imaging. The focus of the paper is on pixel architectures featuring small pixel size (<25 μm and high fill factor (>20% as a key enabling technology for the successful implementation of high spatial resolution SPAD-based image sensors. A summary of the main CMOS SPAD implementations, their characteristics and integration challenges, is provided from the perspective of targeting large pixel arrays, where one of the key drivers is the spatial uniformity. The main analog techniques aimed at time-gated photon counting and photon timestamping suitable for compact and low-power pixels are critically discussed. The main features of these solutions are the adoption of analog counting techniques and time-to-analog conversion, in NMOS-only pixels. Reliable quantum-limited single-photon counting, self-referenced analog-to-digital conversion, time gating down to 0.75 ns and timestamping with 368 ps jitter are achieved.

  11. Development of CMOS Active Pixel Image Sensors for Low Cost Commercial Applications

    Science.gov (United States)

    Gee, R.; Kemeny, S.; Kim, Q.; Mendis, S.; Nakamura, J.; Nixon, R.; Ortiz, M.; Pain, B.; Staller, C.; Zhou, Z; Fossum, E.

    1994-01-01

    JPL, under sponsorship from the NASA Office of Advanced Concepts and Technology, has been developing a second-generation solid-state image sensor technology. Charge-coupled devices (CCD) are a well-established first generation image sensor technology. For both commercial and NASA applications, CCDs have numerous shortcomings. In response, the active pixel sensor (APS) technology has been under research. The major advantages of APS technology are the ability to integrate on-chip timing, control, signal-processing and analog-to-digital converter functions, reduced sensitivity to radiation effects, low power operation, and random access readout.

  12. A Parallel FPGA Implementation for Real-Time 2D Pixel Clustering for the ATLAS Fast TracKer Processor

    CERN Document Server

    Sotiropoulou, C-L; The ATLAS collaboration; Annovi, A; Beretta, M; Kordas, K; Nikolaidis, S; Petridou, C; Volpi, G

    2014-01-01

    The parallel 2D pixel clustering FPGA implementation used for the input system of the ATLAS Fast TracKer (FTK) processor is presented. The input system for the FTK processor will receive data from the Pixel and micro-strip detectors from inner ATLAS read out drivers (RODs) at full rate, for total of 760Gbs, as sent by the RODs after level-1 triggers. Clustering serves two purposes, the first is to reduce the high rate of the received data before further processing, the second is to determine the cluster centroid to obtain the best spatial measurement. For the pixel detectors the clustering is implemented by using a 2D-clustering algorithm that takes advantage of a moving window technique to minimize the logic required for cluster identification. The cluster detection window size can be adjusted for optimizing the cluster identification process. Additionally, the implementation can be parallelized by instantiating multiple cores to identify different clusters independently thus exploiting more FPGA resources. ...

  13. A Parallel FPGA Implementation for Real-Time 2D Pixel Clustering for the ATLAS Fast TracKer Processor

    CERN Document Server

    Sotiropoulou, C-L; The ATLAS collaboration; Annovi, A; Beretta, M; Kordas, K; Nikolaidis, S; Petridou, C; Volpi, G

    2014-01-01

    The parallel 2D pixel clustering FPGA implementation used for the input system of the ATLAS Fast TracKer (FTK) processor is presented. The input system for the FTK processor will receive data from the Pixel and micro-strip detectors from inner ATLAS read out drivers (RODs) at full rate, for total of 760Gbs, as sent by the RODs after level1 triggers. Clustering serves two purposes, the first is to reduce the high rate of the received data before further processing, the second is to determine the cluster centroid to obtain the best spatial measurement. For the pixel detectors the clustering is implemented by using a 2D-clustering algorithm that takes advantage of a moving window technique to minimize the logic required for cluster identification. The cluster detection window size can be adjusted for optimizing the cluster identification process. Additionally, the implementation can be parallelized by instantiating multiple cores to identify different clusters independently thus exploiting more FPGA resources. T...

  14. Sub pixel analysis and processing of sensor data for mobile target intelligence information and verification

    Science.gov (United States)

    Williams, Theresa Allen

    This dissertation introduces a novel process to study and analyze sensor data in order to obtain information pertaining to mobile targets at the sub-pixel level. The process design is modular in nature and utilizes a set of algorithmic tools for change detection, target extraction and analysis, super-pixel processing and target refinement. The scope of this investigation is confined to a staring sensor that records data of sub-pixel vehicles traveling horizontally across the ground. Statistical models of the targets and background are developed with noise and jitter effects. Threshold Change Detection, Duration Change Detection and Fast Adaptive Power Iteration (FAPI) Detection techniques are the three methods used for target detection. The PolyFit and FermiFit are two tools developed and employed for target analysis, which allows for flexible processing. Tunable parameters in the detection methods, along with filters for false alarms, show the adaptability of the procedures. Super-pixel processing tools are designed, and Refinement Through Tracking (RTT) techniques are investigated as post-processing refinement options. The process is tested on simulated datasets, and validated with sensor datasets obtained from RP Flight Systems, Inc.

  15. Depleted Monolithic Active Pixel Sensors (DMAPS) implemented in LF-150 nm CMOS technology

    International Nuclear Information System (INIS)

    We present the recent development of Depleted Monolithic Active Pixel Sensors (DMAPS), implemented with an LFoundry (LF) 150 nm CMOS process. MAPS detectors based on an epi-layer have been matured in recent years and have attractive features in terms of reducing material budget and handling cost compared to conventional hybrid pixel detectors. However, the obtained signal is relatively small (∼1000 e−) due to the thin epi-layer, and charge collection time is relatively slow, e.g., in the order of 100 ns, because charges are mainly collected by diffusion. Modern commercial CMOS technology, however, offers advanced process options to overcome such difficulties and enable truly monolithic devices as an alternative to hybrid pixel sensors and charge coupled devices. Unlike in the case of the standard MAPS technologies with epi-layers, the LF process provides a high-resistivity substrate that enables large signal and fast charge collection by drift in a ∼50 μm thick depleted layer. Since this process also enables the use of deep n- and p-wells to isolate the collection electrode from the thin active device layer, PMOS and NMOS transistors are available for the readout electronics in each pixel cell. In order to evaluate the sensor and transistor characteristics, several collection electrodes variants and readout architectures have been implemented. In this report, we focus on its design aspect of the LF-DMAPS prototype chip

  16. Depleted Monolithic Active Pixel Sensors (DMAPS) implemented in LF-150 nm CMOS technology

    Science.gov (United States)

    Kishishita, T.; Hemperek, T.; Krüger, H.; Wermes, N.

    2015-03-01

    We present the recent development of Depleted Monolithic Active Pixel Sensors (DMAPS), implemented with an LFoundry (LF) 150 nm CMOS process. MAPS detectors based on an epi-layer have been matured in recent years and have attractive features in terms of reducing material budget and handling cost compared to conventional hybrid pixel detectors. However, the obtained signal is relatively small (~1000 e-) due to the thin epi-layer, and charge collection time is relatively slow, e.g., in the order of 100 ns, because charges are mainly collected by diffusion. Modern commercial CMOS technology, however, offers advanced process options to overcome such difficulties and enable truly monolithic devices as an alternative to hybrid pixel sensors and charge coupled devices. Unlike in the case of the standard MAPS technologies with epi-layers, the LF process provides a high-resistivity substrate that enables large signal and fast charge collection by drift in a ~50 μm thick depleted layer. Since this process also enables the use of deep n- and p-wells to isolate the collection electrode from the thin active device layer, PMOS and NMOS transistors are available for the readout electronics in each pixel cell. In order to evaluate the sensor and transistor characteristics, several collection electrodes variants and readout architectures have been implemented. In this report, we focus on its design aspect of the LF-DMAPS prototype chip.

  17. Radiation resistance of double-type double-sided 3D pixel sensors

    CERN Document Server

    Fernandez, M; Lozano, M; Munoz, F.J; Pellegrini, G; Quirion, D; Rohe, T; Vila, I

    2013-01-01

    The proposed high-luminosity upgrade of the Large Hadron Collider is expected to increase the instantaneous luminosity at the experiments' interaction points by a factor of ten. The vertex detector will be the subsystem most affected by the luminosity increase, raising substantially their occupancy and radiation-induced damage. To preserve the vertex physics performance under these new conditions, current pixel technologies have to be improved. Hybrid pixel sensors with double-sided double-type vertical electrodes (3D sensors) are becoming a mature technology for the detector layers closest to the interaction point due to their intrinsic radiation hardness. In addition, the double-sided implementation of the 3D pixel technology provides some additional technical advantages with respect to the single-sided implementation. For this study, 3D pixel sensors manufactured at the Centro Nacional de Microelectrónica of Barcelona (IMB-CNM) have been bonded to the PSI46 readout chip currently used by the Compact Muon ...

  18. Photon Counting Imaging with an Electron-Bombarded Pixel Image Sensor

    Science.gov (United States)

    Hirvonen, Liisa M.; Suhling, Klaus

    2016-01-01

    Electron-bombarded pixel image sensors, where a single photoelectron is accelerated directly into a CCD or CMOS sensor, allow wide-field imaging at extremely low light levels as they are sensitive enough to detect single photons. This technology allows the detection of up to hundreds or thousands of photon events per frame, depending on the sensor size, and photon event centroiding can be employed to recover resolution lost in the detection process. Unlike photon events from electron-multiplying sensors, the photon events from electron-bombarded sensors have a narrow, acceleration-voltage-dependent pulse height distribution. Thus a gain voltage sweep during exposure in an electron-bombarded sensor could allow photon arrival time determination from the pulse height with sub-frame exposure time resolution. We give a brief overview of our work with electron-bombarded pixel image sensor technology and recent developments in this field for single photon counting imaging, and examples of some applications. PMID:27136556

  19. Photon Counting Imaging with an Electron-Bombarded Pixel Image Sensor.

    Science.gov (United States)

    Hirvonen, Liisa M; Suhling, Klaus

    2016-01-01

    Electron-bombarded pixel image sensors, where a single photoelectron is accelerated directly into a CCD or CMOS sensor, allow wide-field imaging at extremely low light levels as they are sensitive enough to detect single photons. This technology allows the detection of up to hundreds or thousands of photon events per frame, depending on the sensor size, and photon event centroiding can be employed to recover resolution lost in the detection process. Unlike photon events from electron-multiplying sensors, the photon events from electron-bombarded sensors have a narrow, acceleration-voltage-dependent pulse height distribution. Thus a gain voltage sweep during exposure in an electron-bombarded sensor could allow photon arrival time determination from the pulse height with sub-frame exposure time resolution. We give a brief overview of our work with electron-bombarded pixel image sensor technology and recent developments in this field for single photon counting imaging, and examples of some applications. PMID:27136556

  20. Photon Counting Imaging with an Electron-Bombarded Pixel Image Sensor

    Directory of Open Access Journals (Sweden)

    Liisa M. Hirvonen

    2016-04-01

    Full Text Available Electron-bombarded pixel image sensors, where a single photoelectron is accelerated directly into a CCD or CMOS sensor, allow wide-field imaging at extremely low light levels as they are sensitive enough to detect single photons. This technology allows the detection of up to hundreds or thousands of photon events per frame, depending on the sensor size, and photon event centroiding can be employed to recover resolution lost in the detection process. Unlike photon events from electron-multiplying sensors, the photon events from electron-bombarded sensors have a narrow, acceleration-voltage-dependent pulse height distribution. Thus a gain voltage sweep during exposure in an electron-bombarded sensor could allow photon arrival time determination from the pulse height with sub-frame exposure time resolution. We give a brief overview of our work with electron-bombarded pixel image sensor technology and recent developments in this field for single photon counting imaging, and examples of some applications.

  1. Simulation of monolithic active pixel sensor with high resistivity epitaxial layer

    International Nuclear Information System (INIS)

    The time and efficiency of charge collection are the key factors of monolithic active pixel sensor devices for minimum ionizing particles tracking detection. In this paper, 3D models of pixels with different resistivity epitaxial layers (epi-layers) are built and simulated using Synopsys-Sentaurus. The basic characteristics of detectors are evaluated, including electric potential, electric field, and depleted region. Results indicate that the high resistivity (HR) epi-layer is a better choice. Further, simulation results show that the key collection performance is significantly improved owing to a wider and stronger electric field in the N type HR epi-layer. (authors)

  2. Performance of the ATLAS Inner Tracker

    CERN Document Server

    Marti-Garcia, S; The ATLAS collaboration

    2011-01-01

    ATLAS is a one of the four multipurpose experiments that records the products of the LHC proton-proton collisions at the LHC. In order to reconstruct the trajectories of charged particles, ATLAS is equipped, among others, with an inner charged particle tracking system built on two different technologies on silicon planar sensors (pixel and microstrips) plus drift-tube based detectors, all embedded in a 2 T solenoidal field. In order to achieve its scientific goals, ATLAS has quite demanding tracking performance requirements. Therefore, ATLAS is equipped, among others, with a charged particle tracking system built on two different technologies: silicon planar sensors and drift-tube based detectors constituting the ATLAS Inner Detector (ID). The ATLAS ID consists of about 6000 modules in its Silicon Tracker combined with several hundred drift tube based detector modules. The silicon modules use both technologies: pixel and microstrip. Pixel modules determine the position of passing particle tracks with an accur...

  3. Development and characterization of the latest X-ray SOI pixel sensor for a future astronomical mission

    Science.gov (United States)

    Nakashima, Shinya; Gando Ryu, Syukyo; Tanaka, Takaaki; Go Tsuru, Takeshi; Takeda, Ayaki; Arai, Yasuo; Imamura, Toshifumi; Ohmoto, Takafumi; Iwata, Atsushi

    2013-12-01

    We have been developing active pixel sensors based on silicon-on-insulator technology for future X-ray astronomy missions. Recently we fabricated the new prototype named “XRPIX2”, and investigated its spectroscopic performance. For comparison and evaluation of different chip designs, XRPIX2 consists of 3 pixel types: Small Pixel, Large Pixel 1, and Large Pixel 2. In Small Pixel, we found that the gains of the 68% pixels are within 1.4% of the mean value, and the energy resolution is 656 eV (FWHM) for 8 keV X-rays, which is the best spectroscopic performance in our development. The pixel pitch of Large Pixel 1 and Large Pixel 2 is twice as large as that of Small Pixel. Charge sharing events are successfully reduced for Large Pixel 1. Moreover Large Pixel 2 has multiple nodes for charge collection in a pixel. We confirmed that the multi-nodes structure is effective to increase charge collection efficiency.

  4. The MOS-type DEPFET pixel sensor for the ILC environment

    Energy Technology Data Exchange (ETDEWEB)

    Andricek, L. [MPI Halbleiterlabor, Otto-Hahn-Ring 6, 81739 Munich (Germany)]|[Max-Planck-Institut fuer Physik, Foehringer Ring 6, 80805 Munich (Germany)]. E-mail: lca@hll.mpg.de; Fischer, P. [Max-Planck-Institut fuer extraterrestrische Physik, Giessenbachstrasse, 85748 Garching (Germany); Heinzinger, K. [MPI Halbleiterlabor, Otto-Hahn-Ring 6, 81739 Munich (Germany)]|[PNSensor GmbH, Roemerstr. 28, 80803 Munich (Germany); Herrmann, S. [Max-Planck-Institut fuer extraterrestrische Physik, Giessenbachstrasse, 85748 Garching (Germany); Herz, D. [Max-Planck-Institut fuer Physik, Foehringer Ring 6, 80805 Munich (Germany)]|[Mannheim University, D-68159 Mannheim (Germany)]|[Bonn Unversity, D-53112 Bonn (Germany); Karagounis, M.; Kohrs, R.; Krueger, H.; Lechner, P.; Reuen, L.; Sandow, C.; Trimpl, M.; Toerne, E.V.; Velthuis, J.; Wermes, N. [PNSensor GmbH, Roemerstr. 28, 80803 Munich (Germany); Lutz, G. [MPI Halbleiterlabor, Otto-Hahn-Ring 6, 81739 Munich (Germany)]|[Max-Planck-Institut fuer Physik, Foehringer Ring 6, 80805 Munich (Germany); Moser, H.-G. [MPI Halbleiterlabor, Otto-Hahn-Ring 6, 81739 Munich (Germany)]|[Max-Planck-Institut fuer Physik, Foehringer Ring 6, 80805 Munich (Germany); Peric, I. [Max-Planck-Institut fuer extraterrestrische Physik, Giessenbachstrasse, 85748 Garching (Germany); Richter, R.H. [MPI Halbleiterlabor, Otto-Hahn-Ring 6, 81739 Munich (Germany)]|[Max-Planck-Institut fuer Physik, Foehringer Ring 6, 80805 Munich (Germany); Schnecke, M. [MPI Halbleiterlabor, Otto-Hahn-Ring 6, 81739 Munich (Germany)]|[Max-Planck-Institut fuer Physik, Foehringer Ring 6, 80805 Munich (Germany); Schopper, F.; Strueder, L.; Treis, J.; Woelfel, S. [MPI Halbleiterlabor, Otto-Hahn-Ring 6, 81739 Munich (Germany)]|[Max-Planck-Institut fuer extraterrestrische Physik, Giessenbachstrasse, 85748 Garching (Germany)

    2006-09-01

    A new generation of MOS-type DEPFET active pixel sensors in double metal/double poly technology with {approx}25 {mu}m pixel size has been developed to meet the requirements of the vertex detector at the International Linear Collider (ILC). The paper presents the design and technology of the new linear MOS-type DEPFET sensors including a module concept and results of a feasibility study on how to build ultra-thin fully depleted sensors. One of the major challenges at the ILC is the dominant e{sup +}e{sup -} pair background from beam-beam interactions. The resulting high occupancy in the first layer of the vertex detector can be reduced by an extremely fast read out of the pixel arrays but the pair-produced electrons will also damage the sensor by ionization. Like all MOS devices, the DEPFET is inherently susceptible to ionizing radiation. The predominant effect of this kind of irradiation is the shift of the threshold voltage to more negative values due to the build up of positive oxide charges. The paper presents the first results of the irradiation of such devices with hard X-rays and gamma rays from a {sup 60}Co source up to 1 Mrad(Si) under various biasing conditions.

  5. Active Pixel Sensors for direct detection of soft X-rays

    International Nuclear Information System (INIS)

    The imaging of soft X-ray images is typically performed with charge coupled devices (CCDs). However, these can have limited readout speed, dynamic range and can also require significant cooling to obtain the required signal to noise ratio. Active pixel sensors (APS) are able to combine faster readout speeds and higher dynamic range with in-pixel intelligence to allow region of interest readout and adaptive gain. To obtain high detection efficiency and 100% pixel fill factor the sensor is back thinned and illuminated from the backside. We report on the characterization of a back-thinned APS (Vanilla); an array of 512 × 512 pixels of size 25 × 25 microns. The sensor has a 12-bit digital output for full frame mode, as well as being able to be readout in a fully programmable Region-Of-Interest (ROI) analogue mode. In full frame, the sensor can operate at a readout rate of more than 100 frames per second. Characterization of the detector was carried out through the analysis of photon transfer curves to yield measurements of the full well capacity, noise levels, gain constants and device linearity. Spectral response measurements were made to show the improvement in detection efficiency using a backthinned sensor. A typical synchrotron experiment was performed at the Diamond Light Source (DLS) using Soft X-rays ( ∼ 700 eV) to produce a diffraction pattern from a permalloy sample. The pattern was imaged at a range of frame rates, up to 20Hz, and a range of temperatures for both a back-thinned Vanilla and a Princeton PIXIS-XO: 2048B CCD. The results of which are compared. The detection efficiency of the APS is shown to be comparable to the CCD for a given frame rate (0.1Hz), with similar noise levels. We suggest that the back-thinned APS are a viable technology choice for the direct detection of soft X-rays for synchrotron applications.

  6. Performance of capacitively coupled active pixel sensors in 180 nm HV-CMOS technology after irradiation to HL-LHC fluences

    Science.gov (United States)

    Feigl, S.

    2014-03-01

    In this ATLAS upgrade R&D project, we explore the concept of using a deep-submicron HV-CMOS process to produce a drop-in replacement for traditional radiation-hard silicon sensors. Such active sensors contain simple circuits, e.g. amplifiers and discriminators, but still require a traditional (pixel or strip) readout chip. This approach yields most advantages of MAPS (improved resolution, reduced cost and material budget, etc.), without the complication of full integration on a single chip. After outlining the basic design of the HV2FEI4 test ASIC, results after irradiation with X-rays to 862 Mrad and neutrons up to 1016(1 MeV neq)/cm2 will be presented. Finally, a brief outlook on further development plans is given.

  7. Performance of capacitively coupled active pixel sensors in 180 nm HV-CMOS technology after irradiation to HL-LHC fluences

    International Nuclear Information System (INIS)

    In this ATLAS upgrade R and D project, we explore the concept of using a deep-submicron HV-CMOS process to produce a drop-in replacement for traditional radiation-hard silicon sensors. Such active sensors contain simple circuits, e.g. amplifiers and discriminators, but still require a traditional (pixel or strip) readout chip. This approach yields most advantages of MAPS (improved resolution, reduced cost and material budget, etc.), without the complication of full integration on a single chip. After outlining the basic design of the HV2FEI4 test ASIC, results after irradiation with X-rays to 862 Mrad and neutrons up to 1016(1 MeV neq)/cm2 will be presented. Finally, a brief outlook on further development plans is given

  8. Development of Kilo-Pixel Arrays of Transition-Edge Sensors for X-Ray Spectroscopy

    Science.gov (United States)

    Adams, J. S.; Bandler, S. R.; Busch, S. E.; Chervenak, J. A.; Chiao, M. P.; Eckart, M. E.; Ewin, A. J.; Finkbeiner, F. M.; Kelley, R. L.; Kelly, D. P.; Kilbourne, C. A.; Leutenegger, M. A.; Porst, J.-P.; Porter, F. S.; Ray, C. A.; Sadleir, J. E.; Smith, S. J.; Wassell, E. J.; Doriese, W. B.; Fowler, J. W.; Hilton, G. C.; Irwin, K. D.; Reintsema, C. D.; Smith, D. R.; Swetz, D. S.

    2012-01-01

    We are developing kilo-pixel arrays of transition-edge sensor (TES) microcalorimeters for future X-ray astronomy observatories or for use in laboratory astrophysics applications. For example, Athena/XMS (currently under study by the european space agency) would require a close-packed 32x32 pixel array on a 250-micron pitch with < 3.0 eV full-width-half-maximum energy resolution at 6 keV and at count-rates of up to 50 counts/pixel/second. We present characterization of 32x32 arrays. These detectors will be readout using state of the art SQUID based time-domain multiplexing (TDM). We will also present the latest results in integrating these detectors and the TDM readout technology into a 16 row x N column field-able instrument.

  9. A parallel FPGA implementation for real-time 2D pixel clustering for the ATLAS Fast Tracker Processor

    Science.gov (United States)

    Sotiropoulou, C. L.; Gkaitatzis, S.; Annovi, A.; Beretta, M.; Kordas, K.; Nikolaidis, S.; Petridou, C.; Volpi, G.

    2014-10-01

    The parallel 2D pixel clustering FPGA implementation used for the input system of the ATLAS Fast TracKer (FTK) processor is presented. The input system for the FTK processor will receive data from the Pixel and micro-strip detectors from inner ATLAS read out drivers (RODs) at full rate, for total of 760Gbs, as sent by the RODs after level-1 triggers. Clustering serves two purposes, the first is to reduce the high rate of the received data before further processing, the second is to determine the cluster centroid to obtain the best spatial measurement. For the pixel detectors the clustering is implemented by using a 2D-clustering algorithm that takes advantage of a moving window technique to minimize the logic required for cluster identification. The cluster detection window size can be adjusted for optimizing the cluster identification process. Additionally, the implementation can be parallelized by instantiating multiple cores to identify different clusters independently thus exploiting more FPGA resources. This flexibility makes the implementation suitable for a variety of demanding image processing applications. The implementation is robust against bit errors in the input data stream and drops all data that cannot be identified. In the unlikely event of missing control words, the implementation will ensure stable data processing by inserting the missing control words in the data stream. The 2D pixel clustering implementation is developed and tested in both single flow and parallel versions. The first parallel version with 16 parallel cluster identification engines is presented. The input data from the RODs are received through S-Links and the processing units that follow the clustering implementation also require a single data stream, therefore data parallelizing (demultiplexing) and serializing (multiplexing) modules are introduced in order to accommodate the parallelized version and restore the data stream afterwards. The results of the first hardware tests of

  10. Low noise, low power front end electronics for pixelized TFA sensors

    CERN Document Server

    Poltorak, K; Dabrowski, W; Despeisse, M; Jarron, P; Kaplon, J; Wyrschb, N

    2009-01-01

    Thin Film on ASIC (TFA) technology combines advantages of two commonly used pixel imaging detectors, namely, Monolithic Active Pixels (MAPs) and Hybrid Pixel detectors. Thanks to direct deposition of a hydrogenated amorphous silicon (a- Si:H) sensor lm on top of the readout ASIC, TFA shows the similarity to MAP imagers, allowing, however, more sophisticated front–end circuitry to extract the signals, like in case of Hybrid Pixel technology. In this paper we present preliminary experimental results of TFA structures, obtained with 10 μm thick hydrogenated amorphous silicon sensors, deposited directly on top of integrated circuit optimized for tracking applications at linear collider experiments. The signal charges delivered by such a-Si:H n-i-p diode are small; about 37 e-/μm for minimum ionizing particles, therefore a low noise, high gain and very low power of the front- end are of primary importance. The developed demonstrator chip, designed in 250 nm CMOS technology, comprises an array of 64 by 64 pi...

  11. LePIX: First results from a novel monolithic pixel sensor

    International Nuclear Information System (INIS)

    We present a monolithic pixel sensor developed in the framework of the LePIX project aimed at tracking/triggering tasks where high granularity, low power consumption, material budget, radiation hardness and production costs are a concern. The detector is built in a 90 nm CMOS process on a substrate of moderate resistivity. This maintains the advantages usually offered by Monolithic Active Pixel Sensors (MAPS), like a low input capacitance, having a single piece detector and using a standard CMOS production line, but offers charge collection by drift from a depleted region and therefore an excellent signal to noise ratio and a radiation tolerance superior to conventional undepleted MAPS. Measurement results obtained with the first prototypes from laser, radioactive source and beam test experiments are described. The excellent signal-to-noise performance is demonstrated by the capability of the device to separate the peaks in the spectrum of a 55Fe source. We will also highlight the interaction between pixel cell design and architecture which points toward a very precise direction in the development of such depleted monolithic pixel devices for high energy physics

  12. A CMOS image sensor using high-speed lock-in pixels for stimulated Raman scattering

    Science.gov (United States)

    Lioe, DeXing; Mars, Kamel; Takasawa, Taishi; Yasutomi, Keita; Kagawa, Keiichiro; Hashimoto, Mamoru; Kawahito, Shoji

    2016-03-01

    A CMOS image sensor using high-speed lock-in pixels for stimulated Raman scattering (SRS) spectroscopy is presented in this paper. The effective SRS signal from the stimulated emission of SRS mechanism is very small in contrast to the offset of a probing laser source, which is in the ratio of 10-4 to 10-5. In order to extract this signal, the common offset component is removed, and the small difference component is sampled using switched-capacitor integrator with a fully differential amplifier. The sampling is performed over many integration cycles to achieve appropriate amplification. The lock-in pixels utilizes high-speed lateral electric field charge modulator (LEFM) to demodulate the SRS signal which is modulated at high-frequency of 20MHz. A prototype chip is implemented using 0.11μm CMOS image sensor technology.

  13. Readout cross-talk for alpha-particle measurements in a pixelated sensor system

    International Nuclear Information System (INIS)

    Simulations in Medici are performed to quantify crosstalk and charge sharing in a hybrid pixelated silicon detector. Crosstalk and charge sharing degrades the spatial and spectral resolution of single photon processing X-ray imaging systems. For typical medical X-ray imaging applications, the process is dominated by charge sharing between the pixels in the sensor. For heavier particles each impact generates a large amount of charge and the simulation seems to over predict the charge collection efficiency. This indicates that some type of non modelled degradation of the charge transport efficiency exists, like the plasma effect where the plasma might shield the generated charges from the electric field and hence distorts the charge transport process. Based on the simulations it can be reasoned that saturation of the amplifiers in the Timepix system might generate crosstalk that increases the charge spread measured from ion impact on the sensor

  14. Two-dimensional pixel image lag simulation and optimization in a 4-T CMOS image sensor

    International Nuclear Information System (INIS)

    Pixel image lag in a 4-T CMOS image sensor is analyzed and simulated in a two-dimensional model. Strategies of reducing image lag are discussed from transfer gate channel threshold voltage doping adjustment, PPD N-type doping dose/implant tilt adjustment and transfer gate operation voltage adjustment for signal electron transfer. With the computer analysis tool ISE-TCAD, simulation results show that minimum image lag can be obtained at a pinned photodiode n-type doping dose of 7.0 x 1012 cm-2, an implant tilt of -20, a transfer gate channel doping dose of 3.0 x 1012 cm-2 and an operation voltage of 3.4 V. The conclusions of this theoretical analysis can be a guideline for pixel design to improve the performance of 4-T CMOS image sensors. (semiconductor devices)

  15. Development of CMOS pixel sensors for tracking and vertexing in high energy physics experiments

    CERN Document Server

    Senyukov, Serhiy; Besson, Auguste; Claus, Giles; Cousin, Loic; Dulinski, Wojciech; Goffe, Mathieu; Hippolyte, Boris; Maria, Robert; Molnar, Levente; Castro, Xitzel Sanchez; Winter, Marc

    2014-01-01

    CMOS pixel sensors (CPS) represent a novel technological approach to building charged particle detectors. CMOS processes allow to integrate a sensing volume and readout electronics in a single silicon die allowing to build sensors with a small pixel pitch ($\\sim 20 \\mu m$) and low material budget ($\\sim 0.2-0.3\\% X_0$) per layer. These characteristics make CPS an attractive option for vertexing and tracking systems of high energy physics experiments. Moreover, thanks to the mass production industrial CMOS processes used for the manufacturing of CPS the fabrication construction cost can be significantly reduced in comparison to more standard semiconductor technologies. However, the attainable performance level of the CPS in terms of radiation hardness and readout speed is mostly determined by the fabrication parameters of the CMOS processes available on the market rather than by the CPS intrinsic potential. The permanent evolution of commercial CMOS processes towards smaller feature sizes and high resistivity ...

  16. Readout cross-talk for alpha-particle measurements in a pixelated sensor system

    Science.gov (United States)

    Norlin, B.; Reza, S.; Krapohl, D.; Fröjdh, E.; Thungström, G.

    2015-05-01

    Simulations in Medici are performed to quantify crosstalk and charge sharing in a hybrid pixelated silicon detector. Crosstalk and charge sharing degrades the spatial and spectral resolution of single photon processing X-ray imaging systems. For typical medical X-ray imaging applications, the process is dominated by charge sharing between the pixels in the sensor. For heavier particles each impact generates a large amount of charge and the simulation seems to over predict the charge collection efficiency. This indicates that some type of non modelled degradation of the charge transport efficiency exists, like the plasma effect where the plasma might shield the generated charges from the electric field and hence distorts the charge transport process. Based on the simulations it can be reasoned that saturation of the amplifiers in the Timepix system might generate crosstalk that increases the charge spread measured from ion impact on the sensor.

  17. The brighter-fatter effect and pixel correlations in CCD sensors

    International Nuclear Information System (INIS)

    We present evidence that spots imaged using astronomical CCDs do not exactly scale with flux: bright spots tend to be broader than faint ones, using the same illumination pattern. We measure that the linear size of spots or stars, of typical size 3 to 4 pixels FWHM, increase linearly with their flux by up to 2 % over the full CCD dynamic range. This brighter-fatter effect affects both deep-depleted and thinned CCD sensors. We propose that this effect is a direct consequence of the distortions of the drift electric field sourced by charges accumulated within the CCD during the exposure and experienced by forthcoming light-induced charges in the same exposure. The pixel boundaries then become slightly dynamical: overfilled pixels become increasingly smaller than their neighbors, so that bright star sizes, measured in number of pixels, appear larger than those of faint stars. This interpretation of the brighter-fatter effect implies that pixels in flat-fields should exhibit statistical correlations, sourced by Poisson fluctuations, that we indeed directly detect. We propose to use the measured correlations in flat-fields to derive how pixel boundaries shift under the influence of a given charge pattern, which allows us in turn to predict how star shapes evolve with flux. We show that, within the precision of our tests, we are able to quantitatively relate the correlations of flat-field pixels and the broadening of stars with flux. This physical model of the brighter-fatter effect also explains the commonly observed phenomenon that the spatial variance of CCD flat-fields increases less rapidly than their average

  18. Design of an ultra low power CMOS pixel sensor for a future neutron personal dosimeter

    Energy Technology Data Exchange (ETDEWEB)

    Zhang, Y.; Hu-Guo, C.; Husson, D.; Hu, Y. [Institut Pluridisplinaire Hubert Curien IPHC, Univ. of Strasbourg, CNRS/IN2P3, 23 Rue du Loess, 67037 Strasbourg (France)

    2011-07-01

    Despite a continuously increasing demand, neutron electronic personal dosimeters (EPDs) are still far from being completely established because their development is a very difficult task. A low-noise, ultra low power consumption CMOS pixel sensor for a future neutron personal dosimeter has been implemented in a 0.35 {mu}m CMOS technology. The prototype is composed of a pixel array for detection of charged particles, and the readout electronics is integrated on the same substrate for signal processing. The excess electrons generated by an impinging particle are collected by the pixel array. The charge collection time and the efficiency are the crucial points of a CMOS detector. The 3-D device simulations using the commercially available Synopsys-SENTAURUS package address the detailed charge collection process. Within a time of 1.9 {mu}s, about 59% electrons created by the impact particle are collected in a cluster of 4 x 4 pixels with the pixel pitch of 80 {mu}m. A charge sensitive preamplifier (CSA) and a shaper are employed in the frond-end readout. The tests with electrical signals indicate that our prototype with a total active area of 2.56 x 2.56 mm{sup 2} performs an equivalent noise charge (ENC) of less than 400 e - and 314 {mu}W power consumption, leading to a promising prototype. (authors)

  19. A Two-Tier Monolithically Stacked CMOS Active Pixel Sensor to Measure Charged Particle Direction

    OpenAIRE

    Passeri, Daniele; Servoli, L.; Meroli, S.; Magalotti, D; Placidi, P; Marras, A.

    2014-01-01

    In this work we present an innovative approach to particle tracking based on CMOSActive Pixel Sensors (APS) layers, monolithically integrated in an all-in-one chip featuring multiple,stacked, fully functional detector layers capable to provide momentum measurement (particledirection) within a single detector by using multiple layer impact point coordinates. The wholesystem will results in a very low material detector, since each layer can be thinned down to tensof micrometres, thus dramatical...

  20. Giga-Pixel Lensfree Holographic Microscopy and Tomography Using Color Image Sensors

    Science.gov (United States)

    Coskun, Ahmet F.; Ozcan, Aydogan

    2012-01-01

    We report Giga-pixel lensfree holographic microscopy and tomography using color sensor-arrays such as CMOS imagers that exhibit Bayer color filter patterns. Without physically removing these color filters coated on the sensor chip, we synthesize pixel super-resolved lensfree holograms, which are then reconstructed to achieve ∼350 nm lateral resolution, corresponding to a numerical aperture of ∼0.8, across a field-of-view of ∼20.5 mm2. This constitutes a digital image with ∼0.7 Billion effective pixels in both amplitude and phase channels (i.e., ∼1.4 Giga-pixels total). Furthermore, by changing the illumination angle (e.g., ±50°) and scanning a partially-coherent light source across two orthogonal axes, super-resolved images of the same specimen from different viewing angles are created, which are then digitally combined to synthesize tomographic images of the object. Using this dual-axis lensfree tomographic imager running on a color sensor-chip, we achieve a 3D spatial resolution of ∼0.35 µm×0.35 µm×∼2 µm, in x, y and z, respectively, creating an effective voxel size of ∼0.03 µm3 across a sample volume of ∼5 mm3, which is equivalent to >150 Billion voxels. We demonstrate the proof-of-concept of this lensfree optical tomographic microscopy platform on a color CMOS image sensor by creating tomograms of micro-particles as well as a wild-type C. elegans nematode. PMID:22984606

  1. Giga-pixel lensfree holographic microscopy and tomography using color image sensors.

    Directory of Open Access Journals (Sweden)

    Serhan O Isikman

    Full Text Available We report Giga-pixel lensfree holographic microscopy and tomography using color sensor-arrays such as CMOS imagers that exhibit Bayer color filter patterns. Without physically removing these color filters coated on the sensor chip, we synthesize pixel super-resolved lensfree holograms, which are then reconstructed to achieve ~350 nm lateral resolution, corresponding to a numerical aperture of ~0.8, across a field-of-view of ~20.5 mm(2. This constitutes a digital image with ~0.7 Billion effective pixels in both amplitude and phase channels (i.e., ~1.4 Giga-pixels total. Furthermore, by changing the illumination angle (e.g., ± 50° and scanning a partially-coherent light source across two orthogonal axes, super-resolved images of the same specimen from different viewing angles are created, which are then digitally combined to synthesize tomographic images of the object. Using this dual-axis lensfree tomographic imager running on a color sensor-chip, we achieve a 3D spatial resolution of ~0.35 µm × 0.35 µm × ~2 µm, in x, y and z, respectively, creating an effective voxel size of ~0.03 µm(3 across a sample volume of ~5 mm(3, which is equivalent to >150 Billion voxels. We demonstrate the proof-of-concept of this lensfree optical tomographic microscopy platform on a color CMOS image sensor by creating tomograms of micro-particles as well as a wild-type C. elegans nematode.

  2. Studies of vertex tracking with SOI pixel sensors for future lepton colliders

    Science.gov (United States)

    Battaglia, Marco; Contarato, Devis; Denes, Peter; Liko, Dietrich; Mattiazzo, Serena; Pantano, Devis

    2012-07-01

    This paper presents a study of vertex tracking with a beam hodoscope consisting of three layers of monolithic pixel sensors in SOI technology on high-resistivity substrate. We study the track extrapolation accuracy, two-track separation and vertex reconstruction accuracy in π- Cu interactions with 150 and 300 GeV/c pions at the CERN SPS. Results are discussed in the context of vertex tracking at future lepton colliders.

  3. Studies of Vertex Tracking with SOI Pixel Sensors for Future Lepton Colliders

    CERN Document Server

    Battaglia, Marco; Denes, Peter; Liko, Dietrich; Mattiazzo, Serena; Pantano, Devis

    2012-01-01

    This paper presents a study of vertex tracking with a beam hodoscope consisting of three layers of monolithic pixel sensors in SOI technology on high-resistivity substrate. We study the track extrapolation accuracy, two-track separation and vertex reconstruction accuracy in pion-Cu interactions with 150 and 300 GeV/c pions at the CERN SPS. Results are discussed in the context of vertex tracking at future lepton colliders.

  4. Giga-pixel lensfree holographic microscopy and tomography using color image sensors.

    Science.gov (United States)

    Isikman, Serhan O; Greenbaum, Alon; Luo, Wei; Coskun, Ahmet F; Ozcan, Aydogan

    2012-01-01

    We report Giga-pixel lensfree holographic microscopy and tomography using color sensor-arrays such as CMOS imagers that exhibit Bayer color filter patterns. Without physically removing these color filters coated on the sensor chip, we synthesize pixel super-resolved lensfree holograms, which are then reconstructed to achieve ~350 nm lateral resolution, corresponding to a numerical aperture of ~0.8, across a field-of-view of ~20.5 mm(2). This constitutes a digital image with ~0.7 Billion effective pixels in both amplitude and phase channels (i.e., ~1.4 Giga-pixels total). Furthermore, by changing the illumination angle (e.g., ± 50°) and scanning a partially-coherent light source across two orthogonal axes, super-resolved images of the same specimen from different viewing angles are created, which are then digitally combined to synthesize tomographic images of the object. Using this dual-axis lensfree tomographic imager running on a color sensor-chip, we achieve a 3D spatial resolution of ~0.35 µm × 0.35 µm × ~2 µm, in x, y and z, respectively, creating an effective voxel size of ~0.03 µm(3) across a sample volume of ~5 mm(3), which is equivalent to >150 Billion voxels. We demonstrate the proof-of-concept of this lensfree optical tomographic microscopy platform on a color CMOS image sensor by creating tomograms of micro-particles as well as a wild-type C. elegans nematode. PMID:22984606

  5. Analysis of noise characteristics for the active pixels in CMOS image sensors for X-ray imaging

    Science.gov (United States)

    Kim, Young Soo; Cho, Gyuseong; Bae, Jun-Hyung

    2006-09-01

    CMOS image sensors have poorer performance compared to conventional charge coupled devices (CCDs). Since CMOS Active Pixel Sensors (APSs) in general have higher temporal noise, higher dark current, smaller full well charge capacitance, and lower spectral response, they cannot provide the same wide dynamic range and superior signal to noise ratio as CCDs. In view of electronic noise, the main source for the CMOS APS is the pixel, along with other signal processing blocks such as row and column decoder, analog signal processor (ASP), analog-to-digital converter (ADC), and timing and control logic circuitry. Therefore, it is important and necessary to characterize noise of the active pixels in CMOS APSs, and we performed experimental measurements and comparisons with theoretical estimations. To derive noise source of the pixels, we designed and fabricated four types of CMOS active pixels, and each pixel is composed of a photodiode and three MOS transistors. The size of these pixels is 100 μm×100 μm. The test chip was fabricated using ETRI 0.8 μm (2P/2M) standard CMOS process. It was found that the dominant noise in CMOS active pixels is shot noise during integration under normal operating conditions. And, it was also seen that epitaxial type pixels have similar noise level compared to non-epitaxial type, and the noise of diffusion type pixel is larger than for a well type pixel on the same substrate type.

  6. Analysis of noise characteristics for the active pixels in CMOS image sensors for X-ray imaging

    International Nuclear Information System (INIS)

    CMOS image sensors have poorer performance compared to conventional charge coupled devices (CCDs). Since CMOS Active Pixel Sensors (APSs) in general have higher temporal noise, higher dark current, smaller full well charge capacitance, and lower spectral response, they cannot provide the same wide dynamic range and superior signal to noise ratio as CCDs. In view of electronic noise, the main source for the CMOS APS is the pixel, along with other signal processing blocks such as row and column decoder, analog signal processor (ASP), analog-to-digital converter (ADC), and timing and control logic circuitry. Therefore, it is important and necessary to characterize noise of the active pixels in CMOS APSs, and we performed experimental measurements and comparisons with theoretical estimations. To derive noise source of the pixels, we designed and fabricated four types of CMOS active pixels, and each pixel is composed of a photodiode and three MOS transistors. The size of these pixels is 100 μmx100 μm. The test chip was fabricated using ETRI 0.8 μm (2P/2M) standard CMOS process. It was found that the dominant noise in CMOS active pixels is shot noise during integration under normal operating conditions. And, it was also seen that epitaxial type pixels have similar noise level compared to non-epitaxial type, and the noise of diffusion type pixel is larger than for a well type pixel on the same substrate type

  7. Development of CMOS Pixel Sensors fully adapted to the ILD Vertex Detector Requirements

    CERN Document Server

    Winter, Marc; Besson, Auguste; Claus, Gilles; Dorokhov, Andrei; Goffe, Mathieu; Hu-Guo, Christine; Morel, Frederic; Valin, Isabelle; Voutsinas, Georgios; Zhang, Liang

    2012-01-01

    CMOS Pixel Sensors are making steady progress towards the specifications of the ILD vertex detector. Recent developments are summarised, which show that these devices are close to comply with all major requirements, in particular the read-out speed needed to cope with the beam related background. This achievement is grounded on the double- sided ladder concept, which allows combining signals generated by a single particle in two different sensors, one devoted to spatial resolution and the other to time stamp, both assembled on the same mechanical support. The status of the development is overviewed as well as the plans to finalise it using an advanced CMOS process.

  8. Design of a radiation hard silicon pixel sensor for X-ray science

    International Nuclear Information System (INIS)

    At DESY Hamburg the European X-ray Free-Electron Laser (EuXFEL) is presently under construction. The EuXFEL has unique properties with respect to X-ray energy, instantaneous intensity, pulse length, coherence and number of pulses/sec. These properties of the EuXFEL pose very demanding requirements for imaging detectors. One of the detector systems which is currently under development to meet these challenges is the Adaptive Gain Integrating Pixel Detector, AGIPD. It is a hybrid pixel-detector system with 1024 x 1024 p+ pixels of dimensions 200 μm x 200 μm, made of 16 p+nn+- silicon sensors, each with 10.52 cm x 2.56 cm sensitive area and 500 μm thickness. The particular requirements for the AGIPD are a separation between noise and single photons down to energies of 5 keV, more than 104 photons per pixel for a pulse duration of less than 100 fs, negligible pile-up at the EuXFEL repetition rate of 4.5 MHz, operation for X-ray doses up to 1 GGy, good efficiency for X-rays with energies between 5 and 20 keV, and minimal inactive regions at the edges. The main challenge in the sensor design is the required radiation tolerance and high operational voltage, which is required to reduce the so-called plasma effect. This requires a specially optimized sensor. The X-ray radiation damage results in a build-up of oxide charges and interface traps which lead to a reduction of the breakdown voltage, increased leakage current, increased interpixel capacitances and charge losses. Extensive TCAD simulations have been performed to understand the impact of X-ray radiation damage on the detector performance and optimize the sensor design. To take radiation damage into account in the simulation, radiation damage parameters have been determined on MOS capacitors and gate-controlled diodes as function of dose. The optimized sensor design was fabricated by SINTEF. Irradiation tests on test structures and sensors show that the sensor design is radiation hard and performs as predicted by

  9. On drift fields in CMOS Monolithic Active Pixel Sensors with point-like collection diodes

    CERN Document Server

    Deveaux, M; Dorokhov, A; Doering, D; Heymes, J; Kachel, M; Koziel, M; Linnik, B; Müntz, C; Stroth, J

    2016-01-01

    CMOS Monolithic Active Pixel Sensors for charged particle tracking are considered as technology for numerous experiments in heavy ion and particle physics. To match the requirements for those applications in terms of tolerance to non-ionizing radiation, it is being tried to deplete the sensitive volume of the, traditionally non-depleted, silicon sensors. We study the feasibility of this approach for the common case that the collection diodes of the pixel are small as compared to the pixel pitch. An analytic equation predicting the thickness of the depletion depth and the capacity of this point-like junction is introduced. We find that the predictions of this equations differs qualitatively from the usual results for flat PN junctions and that $dC/dU$-measurements are not suited to measure the depletion depth of diodes with point-like geometry. The predictions of the equation is compared with measurements on the depletion depth of CMOS sensors, which were carried out with a novel measurement protocol. It is fo...

  10. A digital monolithic active pixel sensor chip in a quadruple-well CIS process

    International Nuclear Information System (INIS)

    A CMOS sensor chip for charged particle detection has been developed and submitted for fabrication in a 0.18 m Quadruple-Well (N and P-Wells, Deep N and P-Wells) CMOS Image Sensor (CIS) process. Improvement of the radiation hardness, the readout speed and the power dissipation of the mainstream CMOS sensors is expected with the exploration of this process. In order to ensure better charge collection and neutron tolerance, wafers with high-resistivity epitaxial layer have been chosen. The chip comprises several sub-chips, and in this paper one of them, a digital CMOS sensor prototype developed in order to validate the key analog blocs (from sensing element to I-bit digital conversion) of a binary MAPS in this process will be presented. The digital sensor prototype comprises four different sub-arrays of 20 μm pitch 64 * 32 pixels, 128 column-level auto-zeroed discriminators, a sequencer and an output digital multiplexer. Laboratory tests results including the charge-to-voltage conversion factor, the charge collection efficiency, the temporal noise and the fixed-pattern noise are presented in details. A 55Fe source is used for calibration of pixels. Some irradiation results will also be given. (authors)

  11. Radiation hardness of a 180 nm SOI monolithic active pixel sensor

    Science.gov (United States)

    Fernandez-Perez, S.; Backhaus, M.; Pernegger, H.; Hemperek, T.; Kishishita, T.; Krüger, H.; Wermes, N.

    2015-10-01

    The use of Silicon-on-Insulator (SOI) technology as a particle detector in a high radiation environment is, at present, limited mostly by radiation effects on the transistor characteristics, back gate effect, and mutual coupling between the Buried Oxide (BOX) and the sensor. We have fabricated and tested a new 0.18 μm SOI CMOS monolithic pixel sensor using the XFAB process. In contrast to the most commonly used SOI technologies, this particular technology uses partially depleted SOI transistors, offering a double well structure, which shields the thin gate oxide transistors from the BOX. In addition, an increased distance between transistors and a thicker BOX than has been previously used offers promising solutions to the performance limitations mentioned above. The process further allows the use of high voltages (up to 200 V), which are used to partially deplete the substrate. Thus, the newly fabricated device in the XFAB process is especially interesting for applications in extremely high radiation environments, such as LHC experiments. A four stage validation programme of the technology and the fabricated monolithic pixel sensor has been performed and its results are shown in this paper. The first targets radiation hardness of the transistor characteristics up to 700 Mrad, the second investigates the existence of the back gate effect, the third one targets the coupling between the BOX and the sensor, and the fourth investigates the characterization of charge collection in the sensor diode below the BOX.

  12. Characterisation of a Thin Fully Depleted SOI Pixel Sensor with High Momentum Charged Particles

    CERN Document Server

    Battaglia, Marco; Contarato, Devis; Denes, Peter; Giubilato, Piero; Mattiazzo, Serena; Pantano, Devis

    2012-01-01

    This paper presents the results of the characterisation of a thin, fully depleted pixel sensor manufactured in SOI technology on high-resistivity substrate with high momentum charged particles. The sensor is thinned to 70 $\\mu$m and a thin phosphor layer contact is implanted on the back-plane. Its response is compared to that of thick sensors of same design in terms of signal and noise, detection efficiency and single point resolution based on data collected with 300 GeV pions at the CERN SPS. We observe that the charge collected and the signal-to-noise ratio scale according to the estimated thickness of the sensitive volume and the efficiency and single point resolution of the thinned chip are comparable to those measured for the thick sensors.

  13. Beam test results of 3D silicon pixel sensors for future upgrades

    Science.gov (United States)

    Nellist, C.; Gligorova, A.; Huse, T.; Pacifico, N.; Sandaker, H.

    2013-12-01

    3D silicon has undergone an intensive beam test programme which has resulted in the successful qualification for the ATLAS Insertable B-Layer (IBL) upgrade project to be installed in 2013-2014. This paper presents selected results from this study with a focus on the final IBL test beam of 2012 where IBL prototype sensors were investigated. 3D devices were studied with 4 GeV positrons at DESY and 120 GeV pions at the SPS at CERN. Measurements include tracking efficiency, charge sharing, time over threshold and cluster size distributions as a function of incident angle for IBL 3D design sensors. Studies of 3D silicon sensors in an anti-proton beam test for the AEgIS experiment are also presented.

  14. High speed data transmission on small gauge cables for the ATLAS Phase-II Pixel detector upgrade

    Science.gov (United States)

    Shahinian, J.; Volk, J.; Fadeyev, V.; Grillo, A. A.; Meimban, B.; Nielsen, J.; Wilder, M.

    2016-03-01

    The High Luminosity LHC will present a number of challenges for the upgraded ATLAS detector. In particular, data transmission requirements for the upgrade of the ATLAS Pixel detector will be difficult to meet. The expected trigger rate and occupancy imply multi-gigabit per second transmission rates will be required but radiation levels at the smallest radius preclude completely optical solutions. Electrical transmission up to distances of 7m will be necessary to move optical components to an area with lower radiation levels. Here, we explore the use of small gauge electrical cables as a high-bandwidth, radiation hard solution with a sufficiently small radiation length. In particular, we present a characterization of various twisted wire pair (TWP) configurations of various material structures, including measurements of their bandwidth, crosstalk, and radiation hardness. We find that a custom ``hybrid'' cable consisting of 1m of a multi-stranded TWP with Poly-Ether-Ether-Ketone (PEEK) insulation and a thin Al shield followed by 6m of a thin twin-axial cable presents a low-mass solution that fulfills bandwidth requirements and is expected to be sufficiently radiation hard. Additionally, we discuss preliminary results of using measured S-parameters to produce a SPICE model for a 1m sample of the custom TWP to be used for the development of new pixel readout chips.

  15. High speed data transmission on small gauge cables for the ATLAS Phase-II Pixel detector upgrade

    International Nuclear Information System (INIS)

    The High Luminosity LHC will present a number of challenges for the upgraded ATLAS detector. In particular, data transmission requirements for the upgrade of the ATLAS Pixel detector will be difficult to meet. The expected trigger rate and occupancy imply multi-gigabit per second transmission rates will be required but radiation levels at the smallest radius preclude completely optical solutions. Electrical transmission up to distances of 7m will be necessary to move optical components to an area with lower radiation levels. Here, we explore the use of small gauge electrical cables as a high-bandwidth, radiation hard solution with a sufficiently small radiation length. In particular, we present a characterization of various twisted wire pair (TWP) configurations of various material structures, including measurements of their bandwidth, crosstalk, and radiation hardness. We find that a custom ''hybrid'' cable consisting of 1m of a multi-stranded TWP with Poly-Ether-Ether-Ketone (PEEK) insulation and a thin Al shield followed by 6m of a thin twin-axial cable presents a low-mass solution that fulfills bandwidth requirements and is expected to be sufficiently radiation hard. Additionally, we discuss preliminary results of using measured S-parameters to produce a SPICE model for a 1m sample of the custom TWP to be used for the development of new pixel readout chips

  16. New generation of monolithic active pixel sensors for charged particle detection

    International Nuclear Information System (INIS)

    Vertex detectors are of great importance in particle physics experiments, as the knowledge of the event flavour is becoming an issue for the physics programme at Future Linear Colliders. Monolithic Active Pixel Sensors (MAPS) based on a novel detector structure have been proposed. Their fabrication is compatible with a standard CMOS process. The sensor is inseparable from the readout electronics, since both of them are integrated on the same, low-resistivity silicon wafer. The basic pixel configuration comprises only three MOS transistors and a diode collecting the charge through thermal diffusion. The charge is generated in the thin non-depleted epitaxial layer underneath the readout electronics. This approach provides, at low cost, a high resolution and thin device with the whole area sensitive to radiation. Device simulations using the ISE-TCAD package have been carried out to study the charge collection mechanism. In order to demonstrate the viability of the technique, four prototype chips have been fabricated using different submicrometer CMOS processes. The pixel gain has been calibrated using a 55Fe source and the Poisson sequence method. The prototypes have been exposed to high-energy particle beams at CERN. The tests proved excellent detection performances expressed in a single-track spatial resolution of 1.5 μm and detection efficiency close to 100%, resulting from a SNR ratio of more than 30. Irradiation tests showed immunity of MAPS to a level of a few times 1012 n/cm2 and a few hundred kRad of ionising radiation. The ideas for future work, including on-pixel signal amplification, double sampling operation and current mode pixel design are present as well. (author)

  17. Research and Development of Monolithic Active Pixel Sensors for the Detection of the Elementary Particles

    International Nuclear Information System (INIS)

    In order to develop high spatial resolution and readout speed vertex detectors for the future International Linear Collider (ILC), fast CMOS Monolithic Active Pixel Sensors (MAPS) are studied on this work. Two prototypes of MAPS, MIMOSA 8 and MIMOSA 16, based on the same micro-electronic architecture were developed in CMOS processes with different thickness of epitaxial layer. The size of pixel matrix is 32 x 128: 8 columns of the pixel array are readout directly with analog outputs and the other 24 columns are connected to the column level auto-zero discriminators. The Correlated Double Sampling (CDS) structures are successfully implemented inside pixel and discriminator. The photo diode type pixels with different diode sizes are used in these prototypes. With a 55Fe X-ray radioactive source, the important parameters, such as Temporal Noise, Fixed Pattern Noise (FPN), Signal-to-Noise Ratio (SNR), Charge-to-Voltage conversion Factor (CVF) and Charge Collection Efficiency (CCE), are studied as function of readout speed and diode size. For MIMOSA 8, the effect of fast neutrons irradiation is also. Two beam tests campaigns were made: at DESY with a 5 GeV electrons beam and at CERN with a 180 GeV pions beam. Detection Efficiency and Spatial Resolution are studied in function of the discriminator threshold. For these two parameters, the influences of diode size and SNR of the central pixel of a cluster are also discussed. In order to improve the spatial resolution of the digital outputs, a very compact (25 μm x 1 mm) and low consumption (300 μW) column level ADC is designed in AMS 0.35 μm OPTO process. Based on successive approximation architecture, the auto-offset cancellation structure is integrated. A new column level auto-zero discriminator using static latch is also designed. (author)

  18. Development of Fast and High Precision CMOS Pixel Sensors for an ILC Vertex Detector

    CERN Document Server

    Hu-Guo, Christine

    2010-01-01

    The development of CMOS pixel sensors with column parallel read-out and integrated zero-suppression has resulted in a full size, nearly 1 Megapixel, prototype with ~100 \\mu s read-out time. Its performances are quite close to the ILD vertex detector specifications, showing that the sensor architecture can presumably be evolved to meet these specifications exactly. Starting from the existing architecture and achieved performances, the paper will expose the details of how the sensor will be evolved in the coming 2-3 years in perspective of the ILD Detector Baseline Document, to be delivered in 2012. Two different devices are foreseen for this objective, one being optimized for the inner layers and their fast read-out requirement, while the other exploits the dimmed background in the outer layers to reduce the power consumption. The sensor evolution relies on a high resistivity epitaxial layer, on the use of an advanced CMOS process and on the combination of column-level ADCs with a pixel array. The paper will p...

  19. High Speed, Radiation Hard CMOS Pixel Sensors for Transmission Electron Microscopy

    Science.gov (United States)

    Contarato, Devis; Denes, Peter; Doering, Dionisio; Joseph, John; Krieger, Brad

    CMOS monolithic active pixel sensors are currently being established as the technology of choice for new generation digital imaging systems in Transmission Electron Microscopy (TEM). A careful sensor design that couples μm-level pixel pitches with high frame rate readout and radiation hardness to very high electron doses enables the fabrication of direct electron detectors that are quickly revolutionizing high-resolution TEM imaging in material science and molecular biology. This paper will review the principal characteristics of this novel technology and its advantages over conventional, optically-coupled cameras, and retrace the sensor development driven by the Transmission Electron Aberration corrected Microscope (TEAM) project at the LBNL National Center for Electron Microscopy (NCEM), illustrating in particular the imaging capabilities enabled by single electron detection at high frame rate. Further, the presentation will report on the translation of the TEAM technology to a finer feature size process, resulting in a sensor with higher spatial resolution and superior radiation tolerance currently serving as the baseline for a commercial camera system.

  20. A CMOS pixel sensor prototype for the outer layers of linear collider vertex detector

    International Nuclear Information System (INIS)

    The International Linear Collider (ILC) expresses a stringent requirement for high precision vertex detectors (VXD). CMOS pixel sensors (CPS) have been considered as an option for the VXD of the International Large Detector (ILD), one of the detector concepts proposed for the ILC. MIMOSA-31 developed at IPHC-Strasbourg is the first CPS integrated with 4-bit column-level ADC for the outer layers of the VXD, adapted to an original concept minimizing the power consumption. It is composed of a matrix of 64 rows and 48 columns. The pixel concept combines in-pixel amplification with a correlated double sampling (CDS) operation in order to reduce the temporal noise and fixed pattern noise (FPN). At the bottom of the pixel array, each column is terminated with a self-triggered analog-to-digital converter (ADC). The ADC design was optimized for power saving at a sampling frequency of 6.25 MS/s. The prototype chip is fabricated in a 0.35 μm CMOS technology. This paper presents the details of the prototype chip and its test results

  1. A CMOS pixel sensor prototype for the outer layers of linear collider vertex detector

    Science.gov (United States)

    Zhang, L.; Morel, F.; Hu-Guo, C.; Himmi, A.; Dorokhov, A.; Hu, Y.

    2015-01-01

    The International Linear Collider (ILC) expresses a stringent requirement for high precision vertex detectors (VXD). CMOS pixel sensors (CPS) have been considered as an option for the VXD of the International Large Detector (ILD), one of the detector concepts proposed for the ILC. MIMOSA-31 developed at IPHC-Strasbourg is the first CPS integrated with 4-bit column-level ADC for the outer layers of the VXD, adapted to an original concept minimizing the power consumption. It is composed of a matrix of 64 rows and 48 columns. The pixel concept combines in-pixel amplification with a correlated double sampling (CDS) operation in order to reduce the temporal noise and fixed pattern noise (FPN). At the bottom of the pixel array, each column is terminated with a self-triggered analog-to-digital converter (ADC). The ADC design was optimized for power saving at a sampling frequency of 6.25 MS/s. The prototype chip is fabricated in a 0.35 μm CMOS technology. This paper presents the details of the prototype chip and its test results.

  2. Characterisation of a CMOS Active Pixel Sensor for use in the TEAM Microscope

    CERN Document Server

    Battaglia, Marco; Denes, Peter; Doering, Dionisio; Duden, Thomas; Krieger, Brad; Giubilato, Piero; Gnani, Dario; Radmilovic, Velimir

    2010-01-01

    A 1M- and a 4M-pixel monolithic CMOS active pixel sensor with 9.5x9.5 micron^2 pixels have been developed for direct imaging in transmission electron microscopy as part of the TEAM project. We present the design and a full characterisation of the detector. Data collected with electron beams at various energies of interest in electron microscopy are used to determine the detector response. Data are compared to predictions of simulation. The line spread function measured with 80 keV and 300 keV electrons is (12.1+/-0.7) micron and (7.4+/-0.6) micron, respectively, in good agreement with our simulation. We measure the detection quantum efficiency to be 0.78+/-0.04 at 80 keV and 0.74+/-0.03 at 300 keV. Using a new imaging technique, based on single electron reconstruction, the line spread function for 80 keV and 300 keV electrons becomes (6.7+/-0.3) micron and (2.4+/-0.2) micron, respectively. The radiation tolerance of the pixels has been tested up to 5 Mrad and the detector is still functional with a decrease o...

  3. Characterisation of a CMOS active pixel sensor for use in the TEAM microscope

    Science.gov (United States)

    Battaglia, Marco; Contarato, Devis; Denes, Peter; Doering, Dionisio; Duden, Thomas; Krieger, Brad; Giubilato, Piero; Gnani, Dario; Radmilovic, Velimir

    2010-10-01

    A 1M- and a 4M-pixel monolithic CMOS active pixel sensor with 9.5×9.5 μm2 pixels have been developed for direct imaging in transmission electron microscopy as part of the TEAM project. We present the design and a full characterisation of the detector. Data collected with electron beams at various energies of interest in electron microscopy are used to determine the detector response. Data are compared to predictions of simulation. The line spread function measured with 80 and 300 keV electrons is (12.1±0.7) and (7.4±0.6) μm, respectively, in good agreement with our simulation. We measure the detection quantum efficiency to be 0.78±0.04 at 80 keV and 0.74±0.03 at 300 keV. Using a new imaging technique, based on single electron reconstruction, the line spread function for 80 and 300 keV electrons becomes (6.7±0.3) and (2.4±0.2) μm, respectively. The radiation tolerance of the pixels has been tested up to 5 Mrad and the detector is still functional with a decrease of dynamic range by ≃30%, corresponding to a reduction in full-well depth from ˜39 to ˜27 primary 300 keV electrons, due to leakage current increase, but identical line spread function performance.

  4. Characterisation of a CMOS active pixel sensor for use in the TEAM microscope

    Energy Technology Data Exchange (ETDEWEB)

    Battaglia, Marco, E-mail: MBattaglia@lbl.go [Lawrence Berkeley National Laboratory, Berkeley, CA 94720 (United States); Santa Cruz Institute of Particle Physics, University of California at Santa Cruz, CA 95064 (United States); Contarato, Devis; Denes, Peter; Doering, Dionisio; Duden, Thomas; Krieger, Brad [Lawrence Berkeley National Laboratory, Berkeley, CA 94720 (United States); Giubilato, Piero [Lawrence Berkeley National Laboratory, Berkeley, CA 94720 (United States); Dipartimento di Fisica, Universita degli Studi, Padova I-35131 (Italy); Gnani, Dario; Radmilovic, Velimir [Lawrence Berkeley National Laboratory, Berkeley, CA 94720 (United States)

    2010-10-21

    A 1M- and a 4M-pixel monolithic CMOS active pixel sensor with 9.5x9.5{mu}m{sup 2} pixels have been developed for direct imaging in transmission electron microscopy as part of the TEAM project. We present the design and a full characterisation of the detector. Data collected with electron beams at various energies of interest in electron microscopy are used to determine the detector response. Data are compared to predictions of simulation. The line spread function measured with 80 and 300 keV electrons is (12.1{+-}0.7) and (7.4{+-}0.6){mu}m, respectively, in good agreement with our simulation. We measure the detection quantum efficiency to be 0.78{+-}0.04 at 80 keV and 0.74{+-}0.03 at 300 keV. Using a new imaging technique, based on single electron reconstruction, the line spread function for 80 and 300 keV electrons becomes (6.7{+-}0.3) and (2.4{+-}0.2){mu}m, respectively. The radiation tolerance of the pixels has been tested up to 5 Mrad and the detector is still functional with a decrease of dynamic range by {approx_equal}30%, corresponding to a reduction in full-well depth from {approx}39 to {approx}27 primary 300 keV electrons, due to leakage current increase, but identical line spread function performance.

  5. A Compact Digital Pixel Sensor (DPS Using 2T-DRAM

    Directory of Open Access Journals (Sweden)

    Xiaoxiao Zhang

    2011-03-01

    Full Text Available In digital pixel sensors (DPS, memory elements typically occupy large silicon area of the pixel, which significantly reduces the pixel’s fill factor while increases its size, power and cost. In this work, we propose to reduce DPS memory’s area and power overhead by reducing the memory requirements with a multi-reset integration scheme, and meanwhile employing a dynamic memory instead of traditionally exploited large 6T-SRAM cell. The operation of the DPS takes advantage from the chronological change of the code, which results in reduced memory needs without affecting the light resolution. In the proposed implementation, a 4-bit in-pixel memory is used to reduce the pixel size, and an 8-bit resolution is achieved with multi-reset scheme. In addition, full complementary metal-oxide-semiconductor (CMOS 2T DRAM and selective refresh scheme are adoptedto implement the memory elements and further increase the area savings. This paper presents the proposed multi-reset integration methodology and its implementation with dedicated memory circuits. Proposed architecture is validated by a prototype chip fabricated using AMS 0.35 μm CMOS technology. Reported experimental results are compared with relative works.

  6. M.i.p. detection performances of a 100 us read-out CMOS pixel sensor with digitised outputs

    CERN Document Server

    Winter, Marc; Besson, Auguste; Colledani, Claude; Degerli, Yavuz; De Masi, Rita; Dorokhov, Andrei; Doziere, Guy; Dulinski, Wojciech; Gelin, Marie; Guilloux, Fabrice; Himmi, Abdelkader; Hu-Guo, Christine; Morel, Frederic; Orsini, Fabienne; Valin, Isabelle; Voutsinas, Georgios

    2009-01-01

    Swift, high resolution CMOS pixel sensors are being developed for the ILC vertex detector, aiming to allow approaching the interaction point very closely. A major issue is the time resolution of the sensors needed to deal with the high occupancy generated by the beam related background. A 128x576 pixel sensor providing digitised outputs at a read-out time of 92.5 us, was fabricated in 2008 within the EU project EUDET, and tested with charged particles at the CERN-SPS. Its prominent performances in terms of noise, detection efficiency versus fake hit rate, spatial resolution and radiation tolerance are overviewed. They validate the sensor architecture.

  7. Performance of a novel wafer scale CMOS active pixel sensor for bio-medical imaging

    International Nuclear Information System (INIS)

    Recently CMOS active pixels sensors (APSs) have become a valuable alternative to amorphous silicon and selenium flat panel imagers (FPIs) in bio-medical imaging applications. CMOS APSs can now be scaled up to the standard 20 cm diameter wafer size by means of a reticle stitching block process. However, despite wafer scale CMOS APS being monolithic, sources of non-uniformity of response and regional variations can persist representing a significant challenge for wafer scale sensor response. Non-uniformity of stitched sensors can arise from a number of factors related to the manufacturing process, including variation of amplification, variation between readout components, wafer defects and process variations across the wafer due to manufacturing processes. This paper reports on an investigation into the spatial non-uniformity and regional variations of a wafer scale stitched CMOS APS. For the first time a per-pixel analysis of the electro-optical performance of a wafer CMOS APS is presented, to address inhomogeneity issues arising from the stitching techniques used to manufacture wafer scale sensors. A complete model of the signal generation in the pixel array has been provided and proved capable of accounting for noise and gain variations across the pixel array. This novel analysis leads to readout noise and conversion gain being evaluated at pixel level, stitching block level and in regions of interest, resulting in a coefficient of variation ⩽1.9%. The uniformity of the image quality performance has been further investigated in a typical x-ray application, i.e. mammography, showing a uniformity in terms of CNR among the highest when compared with mammography detectors commonly used in clinical practice. Finally, in order to compare the detection capability of this novel APS with the technology currently used (i.e. FPIs), theoretical evaluation of the detection quantum efficiency (DQE) at zero-frequency has been performed, resulting in a higher DQE for this

  8. Performance of a novel wafer scale CMOS active pixel sensor for bio-medical imaging.

    Science.gov (United States)

    Esposito, M; Anaxagoras, T; Konstantinidis, A C; Zheng, Y; Speller, R D; Evans, P M; Allinson, N M; Wells, K

    2014-07-01

    Recently CMOS active pixels sensors (APSs) have become a valuable alternative to amorphous silicon and selenium flat panel imagers (FPIs) in bio-medical imaging applications. CMOS APSs can now be scaled up to the standard 20 cm diameter wafer size by means of a reticle stitching block process. However, despite wafer scale CMOS APS being monolithic, sources of non-uniformity of response and regional variations can persist representing a significant challenge for wafer scale sensor response. Non-uniformity of stitched sensors can arise from a number of factors related to the manufacturing process, including variation of amplification, variation between readout components, wafer defects and process variations across the wafer due to manufacturing processes. This paper reports on an investigation into the spatial non-uniformity and regional variations of a wafer scale stitched CMOS APS. For the first time a per-pixel analysis of the electro-optical performance of a wafer CMOS APS is presented, to address inhomogeneity issues arising from the stitching techniques used to manufacture wafer scale sensors. A complete model of the signal generation in the pixel array has been provided and proved capable of accounting for noise and gain variations across the pixel array. This novel analysis leads to readout noise and conversion gain being evaluated at pixel level, stitching block level and in regions of interest, resulting in a coefficient of variation ⩽1.9%. The uniformity of the image quality performance has been further investigated in a typical x-ray application, i.e. mammography, showing a uniformity in terms of CNR among the highest when compared with mammography detectors commonly used in clinical practice. Finally, in order to compare the detection capability of this novel APS with the technology currently used (i.e. FPIs), theoretical evaluation of the detection quantum efficiency (DQE) at zero-frequency has been performed, resulting in a higher DQE for this

  9. Production quality characterisation techniques of sensors and prototypes for the BELLE II Pixel Detector

    International Nuclear Information System (INIS)

    The Belle II detector is a system currently under upgrade at the B-factory SuperKEKB in Tsukuba, Japan. The main novelty is the introduction of an additional position sensitive sub-detector in the vertex detector, between the beam pipe and the strip detector system. The sensor of choice for the Belle II Pixel Detector is the Depleted p-channel Field Effect Transistor (DEPFET) sensor. In this paper the latest production of sensors and prototypes performed at the semiconductor Laboratory of the Max Planck Society, i.e. the PXD9 and the Electrical Multi-Chip Module (EMCM), are described. Wafer-level characterisation methods and techniques for faults in the metal system are also reported

  10. Color filter array patterns for small-pixel image sensors with substantial cross talk.

    Science.gov (United States)

    Anzagira, Leo; Fossum, Eric R

    2015-01-01

    Digital image sensor outputs usually must be transformed to suit the human visual system. This color correction amplifies noise, thus reducing the signal-to-noise ratio (SNR) of the image. In subdiffraction-limit (SDL) pixels, where optical and carrier cross talk can be substantial, this problem can become significant when conventional color filter arrays (CFAs) such as the Bayer patterns (RGB and CMY) are used. We present the design and analysis of new color filter array patterns for improving the color error and SNR deterioration caused by cross talk in these SDL pixels. We demonstrate an improvement in the color reproduction accuracy and SNR in high cross-talk conditions. Finally, we investigate the trade-off between color accuracy and SNR for the different CFA patterns. PMID:26366487

  11. Qualification measurements of the voltage supply system as well as conceptionation of a state machine for the detector control of the ATLAS pixel detector

    International Nuclear Information System (INIS)

    The supply system and the control system of the ATLAS pixel detector represent important building blocks of the pixel detector. Corresponding studies of the supply system, which were performed within a comprehensive test system, the so-called system test, with nearly all final components and the effects on the pixel detector are object of this thesis. A further point of this thesis is the coordination and further development of the detector-control-system software under regardment of the different partial systems. A main topic represents thereby the conceptionation of the required state machine as interface for the users and the connection to the data acquisition system

  12. Detailed study of the column-based priority logic readout of Topmetal-II- CMOS pixel direct charge sensor

    CERN Document Server

    An, Mangmang; Gao, Chaosong; Han, Mikyung; Huang, Guangming; Ji, Rong; Li, Xiaoting; Mei, Yuan; Pei, Hua; Sun, Quan; Sun, Xiangming; Wang, Kai; Xiao, Le; Yang, Ping; Zhang, Wei; Zhou, Wei

    2016-01-01

    We present the detailed study of the digital readout of Topmetal-II- CMOS pixel direct charge sensor. Topmetal-II- is an integrated sensor with an array of 72X72 pixels each capable of directly collecting external charge through exposed metal electrodes in the topmost metal layer. In addition to the time-shared multiplexing readout of the analog output from Charge Sensitive Amplifiers in each pixel, hits are also generated through comparators with individually DAC settable thresholds in each pixel. The hits are read out via a column-based priority logic structure, retaining both hit location and time information. The in-array column-based priority logic is fully combinational hence there is no clock distributed in the pixel array. Sequential logic and clock are placed on the peripheral of the array. We studied the detailed working behavior and performance of this readout, and demonstrated its potential in imaging applications.

  13. Characterization of thin irradiated epitaxial silicon sensors for the CMS phase II pixel 2 upgrade

    International Nuclear Information System (INIS)

    The high-luminosity upgrade of the Large Hadron Collider foreseen around 2023 resulted in the decision to replace the entire tracking system of the CMS experiment. The new pixel detector will be exposed to severe radiation corresponding to 1 MeV neutron equivalent fluence up to φeq ∼ 1016 cm-2 and ionizing dose of ∼ 5 MGy after 3000 fb-1. Thin planar silicon sensors are good candidates to build the pixel detector since the degradation of the signal is less severe than for thicker devices. A study has been carried out in order to characterize highly irradiated planar epitaxial silicon sensors with an active thickness of 100 μm, in addition other silicon materials with a thickness of 200 μm have been studied. The investigation includes pad diodes and strip detectors irradiated up to a fluence of φeq = 1.3 x 1016 cm-2. The diodes have been characterized using laboratory measurements, while measurements have been carried out at the DESY II test beam facility to characterize the charge collection of the strip detectors. In this talk, the results obtained for p-bulk sensors are shown.

  14. A high speed, low power consumption LVDS interface for CMOS pixel sensors

    Energy Technology Data Exchange (ETDEWEB)

    Shi, Zhan, E-mail: sz1134@163.com [Dalian University of Technology, No. 2 Linggong Road, 116024 Dalian (China); Tang, Zhenan, E-mail: tangza@dlut.edu.cn [Dalian University of Technology, No. 2 Linggong Road, 116024 Dalian (China); Tian, Yong [Dalian University of Technology, No. 2 Linggong Road, 116024 Dalian (China); Pham, Hung; Valin, Isabelle; Jaaskelainen, Kimmo [IPHC, 23 rue du Loess 67037 Strasbourg (France); CNRS, UMR7178, 67037 Strasbourg (France)

    2015-01-01

    The use of CMOS Pixel Sensors (CPSs) offers a promising approach to the design of vertex detectors in High Energy Physics (HEP) experiments. As the CPS equipping the upgraded Solenoidal Tracker at RHIC (STAR) pixel detector, ULTIMATE perfectly illustrates the potential of CPSs for HEP applications. However, further development of CPSs with respect to readout speed is required to fulfill the readout time requirement of the next generation HEP detectors, such as the upgrade of A Large Ion Collider Experiment (ALICE) Inner Tracking System (ITS), the International Linear Collider (ILC), and the Compressed Baryonic Matter (CBM) vertex detectors. One actual limitation of CPSs is related to the speed of the Low-Voltage Differential Signaling (LVDS) circuitry implementing the interface between the sensor and the Data Acquisition (DAQ) system. To improve the transmission rate while keeping the power consumption at a low level, a source termination technique and a special current comparator were adopted for the LVDS driver and receiver, respectively. Moreover, hardening techniques are used. The circuitry was designed and submitted for fabrication in a 0.18-µm CMOS Image Sensor (CIS) process at the end of 2011. The test results indicated that the LVDS driver and receiver can operate properly at the data rate of 1.2 Gb/s with power consumption of 19.6 mW.

  15. A high speed, low power consumption LVDS interface for CMOS pixel sensors

    International Nuclear Information System (INIS)

    The use of CMOS Pixel Sensors (CPSs) offers a promising approach to the design of vertex detectors in High Energy Physics (HEP) experiments. As the CPS equipping the upgraded Solenoidal Tracker at RHIC (STAR) pixel detector, ULTIMATE perfectly illustrates the potential of CPSs for HEP applications. However, further development of CPSs with respect to readout speed is required to fulfill the readout time requirement of the next generation HEP detectors, such as the upgrade of A Large Ion Collider Experiment (ALICE) Inner Tracking System (ITS), the International Linear Collider (ILC), and the Compressed Baryonic Matter (CBM) vertex detectors. One actual limitation of CPSs is related to the speed of the Low-Voltage Differential Signaling (LVDS) circuitry implementing the interface between the sensor and the Data Acquisition (DAQ) system. To improve the transmission rate while keeping the power consumption at a low level, a source termination technique and a special current comparator were adopted for the LVDS driver and receiver, respectively. Moreover, hardening techniques are used. The circuitry was designed and submitted for fabrication in a 0.18-µm CMOS Image Sensor (CIS) process at the end of 2011. The test results indicated that the LVDS driver and receiver can operate properly at the data rate of 1.2 Gb/s with power consumption of 19.6 mW

  16. Investigation of the Design Boundaries of a 3,072 X 2,048 Image Sensor Pixel Array

    Science.gov (United States)

    Eid, El-Sayed I.

    2002-09-01

    The practical boundaries surrounding the design of very high resolution image sensors have been studied. The case study used to analyze these practical boundaries is a CMOS photodiode active pixel sensor (APS) image sensor with pixel array format of 3,072 (H) X 2,048 (V). The frame rate of the image sensor is variable up to 30 frames per second (fps), leading to a maximum image data throughput of 180 M pixels per second. The pixel size is 6.0 im, resulting in a pixel fill factor of approximately 48% (implemented in a 0.25 μm CMOS fabrication process) and a 4/3 inch optical format. The resultant die fill factor is approximately 54%. The column-parallel approach, which works well for both the on-chip analog signal processing and analog-to-digital conversion, is adopted. The 10-bit successive approximation ADC was deemed suitable for on-chip integration. The projected total power consumption of the case study image sensor chip is below 200 mW at 3.3-V power supply and below 100 mW at 1.5-V power supply. These power estimates were made for operation at full resolution (6 M pixels per frame) and at maximum frame rate (30 fps), leading to a maximum digital image data throughput of 1.8 G bits per second.

  17. SMARTPIX, a photon-counting pixel detector for synchrotron applications based on Medipix3RX readout chip and active edge pixel sensors

    International Nuclear Information System (INIS)

    Photon-counting pixel detectors are now routinely used on synchrotron beamlines. Many applications benefit from their noiseless mode of operation, single-pixel point spread function and high frame rates. One of their drawbacks is a discontinuous detection area due to the space-consuming wirebonded connections of the readout chips. Moreover, charge sharing limits their efficiency and their energy discrimination capabilities. In order to overcome these issues the ESRF is developing SMARTPIX,a scalable and versatile pixel detector system with minimized dead areas and with energy resolving capabilities based on the MEDIPIX3RX readout chip. SMARTPIX exploits the through-silicon via technology implemented on MEDIPIX3RX, the active edge sensor processing developed in particular at ADVACAM, and the on-chip analog charge summing feature of MEDIPIX3RX. This article reports on system architecture, unit module structure, data acquisition electronics, target characteristics and applications

  18. SMARTPIX, a photon-counting pixel detector for synchrotron applications based on Medipix3RX readout chip and active edge pixel sensors

    Science.gov (United States)

    Ponchut, C.; Collet, E.; Hervé, C.; Le Caer, T.; Cerrai, J.; Siron, L.; Dabin, Y.; Ribois, J. F.

    2015-01-01

    Photon-counting pixel detectors are now routinely used on synchrotron beamlines. Many applications benefit from their noiseless mode of operation, single-pixel point spread function and high frame rates. One of their drawbacks is a discontinuous detection area due to the space-consuming wirebonded connections of the readout chips. Moreover, charge sharing limits their efficiency and their energy discrimination capabilities. In order to overcome these issues the ESRF is developing SMARTPIX,a scalable and versatile pixel detector system with minimized dead areas and with energy resolving capabilities based on the MEDIPIX3RX readout chip. SMARTPIX exploits the through-silicon via technology implemented on MEDIPIX3RX, the active edge sensor processing developed in particular at ADVACAM, and the on-chip analog charge summing feature of MEDIPIX3RX. This article reports on system architecture, unit module structure, data acquisition electronics, target characteristics and applications.

  19. Electrical characteristics of silicon pixel detectors

    Energy Technology Data Exchange (ETDEWEB)

    Gorelov, I.; Gorfine, G.; Hoeferkamp, M.; Mata-Bruni, V.; Santistevan, G.; Seidel, S.C. E-mail: seidel@dot.phys.unm.edu; Ciocio, A.; Einsweiler, K.; Emes, J.; Gilchriese, M.; Joshi, A.; Kleinfelder, S.; Marchesini, R.; McCormack, F.; Milgrome, O.; Palaio, N.; Pengg, F.; Richardson, J.; Zizka, G.; Ackers, M.; Comes, G.; Fischer, P.; Keil, M.; Martinez, G.; Peric, I.; Runolfsson, O.; Stockmanns, T.; Treis, J.; Wermes, N.; Goessling, C.; Huegging, F.; Klaiber-Lodewigs, J.; Krasel, O.; Wuestenfeld, J.; Wunstorf, R.; Barberis, D.; Beccherle, R.; Caso, C.; Cervetto, M.; Darbo, G.; Gagliardi, G.; Gemme, C.; Morettini, P.; Netchaeva, P.; Osculati, B.; Rossi, L.; Charles, E.; Fasching, D.; Blanquart, L.; Breugnon, P.; Calvet, D.; Clemens, J.-C.; Delpierre, P.; Hallewell, G.; Laugier, D.; Mouthuy, T.; Rozanov, A.; Valin, I.; Andreazza, A.; Caccia, M.; Citterio, M.; Lari, T.; Meroni, C.; Ragusa, F.; Troncon, C.; Vegni, G.; Lutz, G.; Richter, R.H.; Rohe, T.; Boyd, G.R.; Skubic, P.L.; Sicho, P.; Tomasek, L.; Vrba, V.; Holder, M.; Ziolkowski, M.; Cauz, D.; Cobal-Grassmann, M.; D' Auria, S.; De Lotto, B.; Del Papa, C.; Grassmann, H.; Santi, L.; Becks, K.H.; Lenzen, G.; Linder, C

    2002-08-21

    Prototype sensors for the ATLAS silicon pixel detector have been electrically characterized. The current and voltage characteristics, charge-collection efficiencies, and resolutions have been examined. Devices were fabricated on oxygenated and standard detector-grade silicon wafers. Results from prototypes which examine p-stop and standard and moderated p-spray isolation are presented for a variety of geometrical options. Some of the comparisons relate unirradiated sensors with those that have received fluences relevant to LHC operation.

  20. Development of a new electronic personal neutron dosemeter using a CMOS active pixel sensor

    International Nuclear Information System (INIS)

    A CMOS active pixel sensor, originally designed for the tracking of minimum ionising charged particles in high-energy physics, has been recently used for the detection of fast neutrons. Data were taken at the IRSN Cadarache facility with a 241Am-Be ISO source and a polyethylene radiator. A high-intrinsic efficiency (1.2 x 10-3) has been obtained. It is in good agreement with both calculations and a MCNPX Monte Carlo simulation. This experiment paves the way for a fully electronic personal neutron dosemeter. (authors)

  1. Radiation hardness of a large area CMOS active pixel sensor for bio-medical applications

    OpenAIRE

    Esposito, M; Diaz, O; Wells, K.; Anaxagoras, T; Allinson, NM

    2012-01-01

    A wafer scale CMOS Active Pixel Sensor has been designed employing design techniques of transistor enclosed geometry and P+ doped guard rings to offer ionizing radiation tolerance. The detector was irradiated with 160 kVp X-rays up to a total dose of 94 kGy(Si) and remained functional. The radiation damage produced in the device has been studied, resulting in a dark current density increase per decade of 96±5 pA/cm/decade and a damage threshold of 204 Gy(Si). The damage produced in the detect...

  2. Filter-free image sensor pixels comprising silicon nanowires with selective color absorption.

    Science.gov (United States)

    Park, Hyunsung; Dan, Yaping; Seo, Kwanyong; Yu, Young J; Duane, Peter K; Wober, Munib; Crozier, Kenneth B

    2014-01-01

    The organic dye filters of conventional color image sensors achieve the red/green/blue response needed for color imaging, but have disadvantages related to durability, low absorption coefficient, and fabrication complexity. Here, we report a new paradigm for color imaging based on all-silicon nanowire devices and no filters. We fabricate pixels consisting of vertical silicon nanowires with integrated photodetectors, demonstrate that their spectral sensitivities are governed by nanowire radius, and perform color imaging. Our approach is conceptually different from filter-based methods, as absorbed light is converted to photocurrent, ultimately presenting the opportunity for very high photon efficiency. PMID:24588103

  3. A neural network clustering algorithm for the ATLAS silicon pixel detector

    Czech Academy of Sciences Publication Activity Database

    Aad, G.; Abbott, B.; Abdallah, J.; Böhm, Jan; Chudoba, Jiří; Havránek, Miroslav; Hejbal, Jiří; Jakoubek, Tomáš; Kepka, Oldřich; Kupčo, Alexander; Kůs, Vlastimil; Lokajíček, Miloš; Lysák, Roman; Marčišovský, Michal; Mikeštíková, Marcela; Myška, M.; Němeček, Stanislav; Šícho, Petr; Staroba, Pavel; Svatoš, Michal; Taševský, Marek; Vrba, Václav

    2014-01-01

    Roč. 9, Sep (2014), s. 1-38. ISSN 1748-0221 R&D Projects: GA MŠk(CZ) LG13009 Institutional support: RVO:68378271 Keywords : Monte Carlo * resolution * impact parameter * cluster * ATLAS * tracks * charged particle * CERN LHC Coll * longitudinal * transverse * splitting Subject RIV: BF - Elementary Particles and High Energy Physics Impact factor: 1.399, year: 2014

  4. MISTRAL & ASTRAL: two CMOS Pixel Sensor architectures suited to the Inner Tracking System of the ALICE experiment

    Science.gov (United States)

    Morel, F.; Hu-Guo, C.; Bertolone, G.; Claus, G.; Colledani, C.; Dorokhov, A.; Dozière, G.; Dulinski, W.; Fang, X.; Goffe, M.; Himmi, A.; Jaaskelainen, K.; Senyukov, S.; Specht, M.; Szelezniak, M.; Pham, H.; Valin, I.; Wang, T.; Winter, M.

    2014-01-01

    A detector, equipped with 50 μm thin CMOS Pixel Sensors (CPS), is being designed for the upgrade of the Inner Tracking System (ITS) of the ALICE experiment at LHC. Two CPS flavours, MISTRAL and ASTRAL, are being developed at IPHC aiming to meet the requirements of the ITS upgrade. The first is derived from the MIMOSA28 sensor designed for the STAR-PXL detector. The second integrates a discriminator in each pixel to improve the readout speed and power consumption. This paper will describe in details the sensor development and show some preliminary test results.

  5. M.i.p. detection performances of a 100 us read-out CMOS pixel sensor with digitised outputs

    OpenAIRE

    Winter, Marc; Baudot, Jerome; Besson, Auguste; Colledani, Claude; Degerli, Yavuz; De Masi, Rita; Dorokhov, Andrei; Doziere, Guy; Dulinski, Wojciech; Gelin, Marie; Guilloux, Fabrice; Himmi, Abdelkader; Hu-Guo, Christine; Morel, Frederic; Orsini, Fabienne

    2009-01-01

    Swift, high resolution CMOS pixel sensors are being developed for the ILC vertex detector, aiming to allow approaching the interaction point very closely. A major issue is the time resolution of the sensors needed to deal with the high occupancy generated by the beam related background. A 128x576 pixel sensor providing digitised outputs at a read-out time of 92.5 us, was fabricated in 2008 within the EU project EUDET, and tested with charged particles at the CERN-SPS. Its prominent performanc...

  6. High-resolution hybrid pixel sensors for the e sup + e sup - Tesla linear collider vertex tracker

    CERN Document Server

    Battaglia, Marco; Tammi, K; Österberg, K; Kucewicz, W; Zalewska-Bak, A; Caccia, M; Campagnolo, R; Meroni, C; Grabiec, P; Jaroszewicz, B; Marczewski, J

    2000-01-01

    In order to fully exploit the physics potential of a future high-energy e sup + e sup - linear collider, a Vertex Tracker, providing high-resolution track reconstruction, is required. Hybrid silicon pixel sensors are an attractive option, for the sensor technology, due to their read-out speed and radiation hardness, favoured in the high-rate environment of the TESLA e sup + e sup - linear collider design, but have been so far limited by the achievable single point space resolution. In this paper, a conceptual design of the TESLA Vertex Tracker, based on a novel layout of hybrid pixel sensors with interleaved cells to improve their spatial resolution, is presented.

  7. CMOS Active Pixel Sensors as energy-range detectors for proton Computed Tomography

    International Nuclear Information System (INIS)

    Since the first proof of concept in the early 70s, a number of technologies has been proposed to perform proton CT (pCT), as a means of mapping tissue stopping power for accurate treatment planning in proton therapy. Previous prototypes of energy-range detectors for pCT have been mainly based on the use of scintillator-based calorimeters, to measure proton residual energy after passing through the patient. However, such an approach is limited by the need for only a single proton passing through the energy-range detector in a read-out cycle. A novel approach to this problem could be the use of pixelated detectors, where the independent read-out of each pixel allows to measure simultaneously the residual energy of a number of protons in the same read-out cycle, facilitating a faster and more efficient pCT scan. This paper investigates the suitability of CMOS Active Pixel Sensors (APSs) to track individual protons as they go through a number of CMOS layers, forming an energy-range telescope. Measurements performed at the iThemba Laboratories will be presented and analysed in terms of correlation, to confirm capability of proton tracking for CMOS APSs

  8. CMOS Active Pixel Sensors as energy-range detectors for proton Computed Tomography

    Science.gov (United States)

    Esposito, M.; Anaxagoras, T.; Evans, P. M.; Green, S.; Manolopoulos, S.; Nieto-Camero, J.; Parker, D. J.; Poludniowski, G.; Price, T.; Waltham, C.; Allinson, N. M.

    2015-06-01

    Since the first proof of concept in the early 70s, a number of technologies has been proposed to perform proton CT (pCT), as a means of mapping tissue stopping power for accurate treatment planning in proton therapy. Previous prototypes of energy-range detectors for pCT have been mainly based on the use of scintillator-based calorimeters, to measure proton residual energy after passing through the patient. However, such an approach is limited by the need for only a single proton passing through the energy-range detector in a read-out cycle. A novel approach to this problem could be the use of pixelated detectors, where the independent read-out of each pixel allows to measure simultaneously the residual energy of a number of protons in the same read-out cycle, facilitating a faster and more efficient pCT scan. This paper investigates the suitability of CMOS Active Pixel Sensors (APSs) to track individual protons as they go through a number of CMOS layers, forming an energy-range telescope. Measurements performed at the iThemba Laboratories will be presented and analysed in terms of correlation, to confirm capability of proton tracking for CMOS APSs.

  9. Design and testing of monolithic active pixel sensors for charged particle tracking

    CERN Document Server

    Deptuch, G; Claus, G; Colledani, C; Dulinski, W; Gornushkin, Y; Husson, D; Riester, J L; Winter, M

    2002-01-01

    A monolithic active pixel sensor (MAPS) for charged particle tracking based on a novel detector structure has been proposed, simulated, fabricated and tested. This detector is inseparable from the readout electronics, since both of them are integrated on the same, low- resistivity silicon wafer standard for a CMOS process. The individual pixel is comprised of only three MOS transistors and a photodiode collecting the charge created in the thin undepleted epitaxial layer. This approach provides a low cost, high resolution and thin device with the whole detector area sensitive to radiation (100% fill factor). Detailed device simulations using the ISE-TCAD package have been carried out in order to study the charge. collection mechanism and to validate the proposed idea. In order to demonstrate viability of the technique, two prototype chips were successively fabricated using 0.6 mu m and 0.35 mu m CMOS processes. Both chips have been fully characterized. The pixel conversion gain has been calibrated using a /sup...

  10. 128x96 pixel field emitter-array image sensor with HARP target

    Science.gov (United States)

    Yamagishi, Toshio; Nanba, Masakazu; Osada, Katsunori; Takiguchi, Yoshiro; Okazaki, Saburo; Egami, Norifumi; Tanioka, Kenkichi; Tanaka, Mitsuru; Itoh, Shigeo

    2002-04-01

    In pursuit of developing a next-generation pick-up device having high definition and ultrahigh sensitivity features, research continues on a new type of image sensor that combines a HARP target and a field emitter array. A new field emitter array on a small-sized substrate is designed and a unique packaging technique is proposed. The prototype device is sealed in a vacuum package with a thickness of only about 10 mm and has 128 horizontal and 96 vertical pixels. Experimental results show that images could be successfully reproduced for the first time ever in a device of this type. Highly sensitive characteristics and propr resolution were also obtained with the device. The prototype image sensor can operate stably for more than 250 hours, demonstrating its feasibility and potential as a next- generation image pickup device.

  11. High voltage monolithic active pixel sensors for the PANDA luminosity detector

    International Nuclear Information System (INIS)

    The PANDA-Experiment will be part of the new FAIR accelerator center at Darmstadt, Germany. It is a fixed target experiment using a antiproton beam with very high resolution for precision measurements. For a variety of measurements like energy-scans the precise determination of the luminosity is needed. The luminosity detector will determine the luminosity by measuring the angular distribution of elastically scattered antiprotons very close to the beam axis (3-8 mrad). To reconstruct antiproton tracks four layers of thinned silicon sensors with smart pixel readout on chip (HV-MAPS) will be used. Those sensors are currently under development by the Mu3e-collaboration. In the talk the concept of the luminosity measurement is shortly introduced before a summary of the status of HV-MAP prototypes and recent test beam results are presented.

  12. Radiationhard components for the control system of a future ATLAS pixel detector

    CERN Document Server

    Becker, K; Kersten, S; Kind, P; Mättig, P; Püllen, L; Zeitnitz, C

    2015-01-01

    will include a new pixel detector. A completely new detector control system (DCS) for this pixel detector will be required in order to cope with the substantial increase in radiation at the HL-LHC. The DCS has to have a very high reliability and all components installed within the detector volume have to be radiationhard. This will ensure a safe operation of the pixel detector and the experiment. A further design constraint is the minimization of the used material and cables in order to limit the impact on the tracking performance to a minimum. To meet these requirements we propose a DCS network which consists of a DCS chip and a DCS controller. In the following we present the development of the first prototypes for the DCS chip and the DCS controller with a special focus on the communication interface, radiation hardness and robustness against single event upsets.

  13. DMAPS: a fully depleted monolithic active pixel sensor - analog performance characterization

    CERN Document Server

    Havránek, Miroslav; Krüger, Hans; Fu, Yunan; Germic, Leonard; Kishishita, Tetsuichi; Obermann, Theresa; Wermes, Norbert

    2014-01-01

    Monolithic Active Pixel Sensors (MAPS) have been developed since the late 1990s based on silicon substrates with a thin epitaxial layer (thickness of 10-15 $\\mu$m) in which charge is collected on an electrode, albeit by disordered and slow diffusion rather than by drift in a directed electric field. As a consequence, the signal is small ($\\approx$ 1000 e$^-$) and the radiation tolerance is much below the LHC requirements by factors of 100 to 1000. In this paper we present the development of a fully Depleted Monolithic Active Pixel Sensors (DMAPS) based on a high resistivity substrate allowing the creation of a fully depleted detection volume. This concept overcomes the inherent limitations of charge collection by diffusion in the standard MAPS designs. We present results from a test chip EPCB01 designed in a commercial 150 nm CMOS technology. The technology provides a thin (50 $\\mu$m) high resistivity n-type silicon substrate as well as an additional deep p-well which allows to integrate full CMOS circuitry i...

  14. 2PFCTM (two pixels, full color): Image sensor demosaicing and characterization

    Science.gov (United States)

    Tamburrino, Daniel; Speigle, Jon M.; Tweet, Douglas J.; Lee, Jong-Jan

    2010-04-01

    We propose a modification to the standard Bayer color filter array (CFA) and photodiode structure for CMOS image sensors, which we call 2PFC™ (two pixels, full color). The blue and red filters of the Bayer pattern are replaced by a magenta filter. Under each magenta filter are two stacked, pinned photodiodes; the diode nearest the surface absorbs mostly blue light, and the deeper diode absorbs mostly red light. The magenta filter absorbs green light, improving color separation between the blue and red diodes. We first present a frequency-based demosaicing method, which takes advantage of the new 2PFC geometry. Due to the spatial arrangement of red, green, and blue pixels, luminance and chrominance are very well separated in the Fourier space, allowing for computationally inexpensive linear filtering. In comparison with state-of-the-art demosaicing methods for the Bayer CFA, we show that our sensor and demosaicing method outperform the others in terms of color aliasing, peak signal to noise ratio, and zipper effect. As demosaicing alone does not determine image quality, we also analyze the whole system performance in terms of resolution and noise.

  15. Detection of thermal neutrons with a CMOS pixel sensor for a future dosemeter

    Energy Technology Data Exchange (ETDEWEB)

    Vanstalle, M.; Husson, D.; Higueret, S.; Le, T. D.; Nourreddine, A. M. [Institut Pluridisciplinaire Hubert Curien, Univ. of Strasbourg, CNRS, 67037 Strasbourg (France)

    2011-07-01

    The RaMsEs group (Radioprotection et Mesures Environnementales) is developing a new compact device for operational neutron dosimetry. The electronic part of the detector is made of an integrated active pixel sensor, originally designed for tracking in particle physics. This device has useful features for neutrons, such as high detection efficiency for charged particles, good radiation resistance, high readout speed, low power consumption and high rejection of photon background. A good response of the device to fast neutrons has already been demonstrated [1]. In order to test the sensibility of the detector to thermal neutrons, experiments have been carried out with a 512 x 512 pixel CMOS sensor on a californium source moderated with heavy water (Cf.D{sub 2}O) on the Van Gogh irradiator at the LMDN, IRSN, Cadarache (France)). A thin boron converter is used to benefit from the significant cross section of the {sup 10}B (n,{alpha}) {sup 7}Li reaction. Results show a high detection efficiency (around 10{sup -3}) of the device to thermal neutrons. Our measurements are in good agreement with GEANT4 Monte Carlo simulations. (authors)

  16. Novel Logarithmic Active Pixel Sensor with High Dynamic Range and High Output Swing

    Institute of Scientific and Technical Information of China (English)

    FU Xian-song; YAO Su-ying; YUAN Yi-dong; XU Jiang-tao; DING Ke; YAN Kun-shan

    2008-01-01

    The logarithmic response complementary metal oxide semiconductor(CMOS) image sensor provides a wide dynamic range, but its drawback is the lack of simple fixed pattern noise(FPN) cancellation scheme. Designed is a novel logarithmic active pixel sensor(APS) with high dynamic range and high output swing. Firstly, the operation principle of mixed-model APS is introduced. The pixel can work in three operation modes by choosing the proper control signals. Then, FPN sources of logarithmic APS are analyzed, and double-sampled technique is implemented to reduce FPN. Finally, according to the simulation results, layout is designed and has passed design rule check(DRC), electronic rule check(ERC) and layout versus schematic(LVS) verifications, and the post-simulation results are basically in agreement with the simulation results. Dynamic range of the new logarithmic APS can reach about 140 dB; and the output swing is about 750 mV. Results show that by using double sampled technique, most FPN is eliminated and the dynamic range is enhanced.

  17. 12-inch-wafer-scale CMOS active-pixel sensor for digital mammography

    Science.gov (United States)

    Heo, Sung Kyn; Kosonen, Jari; Hwang, Sung Ha; Kim, Tae Woo; Yun, Seungman; Kim, Ho Kyung

    2011-03-01

    This paper describes the development of an active-pixel sensor (APS) panel, which has a field-of-view of 23.1×17.1 cm and features 70-μm-sized pixels arranged in a 3300×2442 array format, for digital mammographic applications. The APS panel was realized on 12-inch wafers based on the standard complementary metal-oxide-semiconductor (CMOS) technology without physical tiling processes of several small-area sensor arrays. Electrical performance of the developed panel is described in terms of dark current, full-well capacity and leakage current map. For mammographic imaging, the optimized CsI:Tl scintillator is experimentally determined by being combined with the developed panel and analyzing im aging characteristics, such as modulation-transfer function, noise-power spectrum, detective quantum efficiency, image l ag, and contrast-detail analysis by using the CDMAM 3.4 phantom. With these results, we suggest that the developed CMOS-based detector can be used for conventional and advanced digital mammographic applications.

  18. Qualification measurements of the voltage supply system as well as conceptionation of a state machine for the detector control of the ATLAS pixel detector; Qualifizierungsmessungen des Spannungsversorgungssystems sowie Konzeptionierung einer Zustandsmaschine fuer die Detektorkontrolle des ATLAS-Pixeldetektors

    Energy Technology Data Exchange (ETDEWEB)

    Schultes, Joachim

    2007-02-15

    The supply system and the control system of the ATLAS pixel detector represent important building blocks of the pixel detector. Corresponding studies of the supply system, which were performed within a comprehensive test system, the so-called system test, with nearly all final components and the effects on the pixel detector are object of this thesis. A further point of this thesis is the coordination and further development of the detector-control-system software under regardment of the different partial systems. A main topic represents thereby the conceptionation of the required state machine as interface for the users and the connection to the data acquisition system.

  19. The Read-Out Driver (ROD) card for the ATLAS experiment: commissioning for the IBL detector and upgrade studies for the Pixel Layers 1 and 2

    CERN Document Server

    Travaglini, R; The ATLAS collaboration; Bindi, M; Falchieri, D; Gabrielli, A; Lama, L; Chen, S P; Hsu, S C; Hauck, S; Kugel, A; Flick, T; Wensing, M

    2013-01-01

    The upgrade of the ATLAS experiment at LHC foresees the insertion of an innermost silicon layer, called Insertable B-layer (IBL). IBL read-out system will be equipped with new electronics. The Readout-Driver card (ROD) is a VME board devoted to data processing, configuration and control. A pre-production batch has been delivered in order to perform tests with instrumented slices of the overall acquisition chain, aiming to finalize strategies for system commissioning. In this contribution both setups and results will be described, as well as preliminary studies on changes in order to adopt the ROD for the ATLAS Pixel Layers 1 and 2.

  20. Effect and suppression of parasitic surface damage in neutron irradiated CMOS Monolithic Active Pixel Sensors

    CERN Document Server

    Deveaux, M; Scharrer, P; Stroth, J

    2016-01-01

    CMOS Monolithic Active Pixel Sensors (MAPS) were chosen as sensor technology for the vertex detectors of STAR, CBM and the upgraded ALICE-ITS. They also constitute a valuable option for tracking devices at future e+e- colliders. Those applications require a substantial tolerance to both, ionizing and non-ionizing radiation. To allow for a focused optimization of the radiation tolerance, prototypes are tested by irradiating the devices either with purely ionizing radiation (e.g. soft X-rays) or the most pure sources of non-ionizing radiation available (e.g. reactor neutrons). In the second case, it is typically assumed that the impact of the parasitic $\\gamma$-rays found in the neutron beams is negligible. We checked this assumption by irradiating MAPS with $\\gamma$-rays and comparing the radiation damage generated with the one in neutron irradiated sensors. We conclude that the parasitic radiation doses may cause non-negligible radiation damage. Based on the results we propose a procedure to recognize and to ...

  1. A DVP-Based Bridge Architecture to Randomly Access Pixels of High-Speed Image Sensors

    Directory of Open Access Journals (Sweden)

    Khan TareqHasan

    2011-01-01

    Full Text Available A design of a novel bridge is proposed to interface digital-video-port (DVP compatible image sensors with popular microcontrollers. Most commercially available CMOS image sensors send image data at high speed and in a row-by-row fashion. On the other hand, commercial microcontrollers run at relatively slower speed, and many embedded system applications need random access of pixel values. Moreover, commercial microcontrollers may not have sufficient internal memory to store a complete image of high resolution. The proposed bridge addresses these problems and provides an easy-to-use and compact way to interface image sensors with microcontrollers. The proposed design is verified in FPGA and later implemented using CMOS 0.18 um Artisan library cells. The design costs 4,735 gates and 0.12 mm2 silicon area. The synthesis results show that the bridge can support a data rate up to 254 megasamples/sec. Its applications may include pattern recognition, robotic vision, tracking system, and medical imaging.

  2. Improved Design of Active Pixel CMOS Sensors for Charged Particle Detection

    International Nuclear Information System (INIS)

    The Department of Energy (DOE) nuclear physics program requires developments in detector instrumentation electronics with improved energy, position and timing resolution, sensitivity, rate capability, stability, dynamic range, and background suppression. The current Phase-I project was focused on analysis of standard-CMOS photogate Active Pixel Sensors (APS) as an efficient solution to this challenge. The advantages of the CMOS APS over traditional hybrid approaches (i.e., separate detection regions bump-bonded to readout circuits) include greatly reduced cost, low power and the potential for vastly larger pixel counts and densities. However, challenges remain in terms of the signal-to-noise ratio (SNR) and readout speed (currently on the order of milliseconds), which is the major problem for this technology. Recent work has shown that the long readout time for photogate APS is due to the presence of (interface) traps at the semiconductor-oxide interface. This Phase-I work yielded useful results in two areas: (a) Advanced three-dimensional (3D) physics-based simulation models and simulation-based analysis of the impact of interface trap density on the transient charge collection characteristics of existing APS structures; and (b) Preliminary analysis of the feasibility of an improved photogate pixel structure (i.e., new APS design) with an induced electric field under the charge collecting electrode to enhance charge collection. Significant effort was dedicated in Phase-I to the critical task of implementing accurate interface trap models in CFDRC's NanoTCAD 3D semiconductor device-physics simulator. This resulted in validation of the new NanoTCAD models and simulation results against experimental (published) data, within the margin of uncertainty associated with obtaining device geometry, material properties, and experimentation details. Analyses of the new, proposed photogate APS design demonstrated several promising trends

  3. The ATLAS IBL CO2 Cooling System

    CERN Document Server

    Verlaat, Bartholomeus; The ATLAS collaboration

    2016-01-01

    The Atlas Pixel detector has been equipped with an extra B-layer in the space obtained by a reduced beam pipe. This new pixel detector called the ATLAS Insertable B-Layer (IBL) is installed in 2014 and is operational in the current ATLAS data taking. The IBL detector is cooled with evaporative CO2 and is the first of its kind in ATLAS. The ATLAS IBL CO2 cooling system is designed for lower temperature operation (<-35⁰C) than the previous developed CO2 cooling systems in High Energy Physics experiments. The cold temperatures are required to protect the pixel sensors for the high expected radiation dose up to 550 fb^-1 integrated luminosity. This paper describes the design, development, construction and commissioning of the IBL CO2 cooling system. It describes the challenges overcome and the important lessons learned for the development of future systems which are now under design for the Phase-II upgrade detectors.

  4. Measurement of performance of the pixel neural network clustering algorithm of the ATLAS experiment at $\\sqrt{s}$ = 13 TeV

    CERN Document Server

    The ATLAS collaboration

    2015-01-01

    The properties of pixel clusters in dense environments are studied with $\\sqrt{s}$ = 13 TeV proton-proton collisions from the LHC, recorded by ATLAS from June to July 2015. A novel method to evaluate the performance of the artificial neural network used for identifying pixel clusters created by multiple particles is presented. Using this method, the results in data and Monte Carlo simulation are compared. The neural network, as part of the track reconstruction, shows the expected response when used on collimated tracks.

  5. A proposed STAR microvertex detector using Active Pixel Sensors with some relevant studies on APS performance

    International Nuclear Information System (INIS)

    A vertex detector that can measure particles with charm or bottom quarks would dramatically expand the physics capability of the STAR detector at RHIC. To accomplish this, we are proposing to build the Heavy Flavor Tracker (HFT) using 2x2 cm Active Pixels Sensors (APS). Ten of these APS chips will be arranged on a ladder (0.28% of a radiation length) at radii of 1.5 and at 5.0 cm. We have examined several properties of APS chips, so that we can characterize the performance of this detector. Using 1.5 GeV/c electrons, we have measured the charge collected and compared it to the expected charge. To achieve high efficiency, we have considered two different cluster finding algorithms and found that the choice of algorithm is dependent on noise level. We have demonstrated that a Scanning Electron Microscope can probe properties of an APS chip. In particular, we studied several position resolution algorithms. Finally, we studied the properties of pixel pitches from 5 to 30 μm

  6. A low noise reference generator in Monolithic Active Pixel Sensors for STAR

    International Nuclear Information System (INIS)

    In order to reduce the number of cables and gain a lower material budget, this paper presents an on-chip reference generator to provide the clamping voltage in monolithic active pixel sensors (MAPS) for the STAR experiment. It is realized by a regulator utilizing a buffer and a serial RC network. The proposed circuits can achieve good stability, low power dissipation and low noise. Moreover, the output voltage is adjustable to compensate the influence of the process. A prototype has been implemented in a 0.35 μm CMOS process. Its die area is 327 μm x 119 μm. The power dissipation is 677 μW. The measured results show that 5.3% of the noise in MAPS is induced by the reference generator.

  7. 3D active edge silicon sensors: Device processing, yield and QA for the ATLAS-IBL production

    International Nuclear Information System (INIS)

    3D silicon sensors, where plasma micromachining is used to etch deep narrow apertures in the silicon substrate to form electrodes of PIN junctions, were successfully manufactured in facilities in Europe and USA. In 2011 the technology underwent a qualification process to establish its maturity for a medium scale production for the construction of a pixel layer for vertex detection, the Insertable B-Layer (IBL) at the CERN-LHC ATLAS experiment. The IBL collaboration, following that recommendation from the review panel, decided to complete the production of planar and 3D sensors and endorsed the proposal to build enough modules for a mixed IBL sensor scenario where 25% of 3D modules populate the forward and backward part of each stave. The production of planar sensors will also allow coverage of 100% of the IBL, in case that option was required. This paper will describe the processing strategy which allowed successful 3D sensor production, some of the Quality Assurance (QA) tests performed during the pre-production phase and the production yield to date.

  8. 3D active edge silicon sensors: Device processing, yield and QA for the ATLAS-IBL production

    Science.gov (United States)

    Da Vià, Cinzia; Boscardil, Maurizio; Dalla Betta, GianFranco; Darbo, Giovanni; Fleta, Celeste; Gemme, Claudia; Giacomini, Gabriele; Grenier, Philippe; Grinstein, Sebastian; Hansen, Thor-Erik; Hasi, Jasmine; Kenney, Christopher; Kok, Angela; La Rosa, Alessandro; Micelli, Andrea; Parker, Sherwood; Pellegrini, Giulio; Pohl, David-Leon; Povoli, Marco; Vianello, Elisa; Zorzi, Nicola; Watts, S. J.

    2013-01-01

    3D silicon sensors, where plasma micromachining is used to etch deep narrow apertures in the silicon substrate to form electrodes of PIN junctions, were successfully manufactured in facilities in Europe and USA. In 2011 the technology underwent a qualification process to establish its maturity for a medium scale production for the construction of a pixel layer for vertex detection, the Insertable B-Layer (IBL) at the CERN-LHC ATLAS experiment. The IBL collaboration, following that recommendation from the review panel, decided to complete the production of planar and 3D sensors and endorsed the proposal to build enough modules for a mixed IBL sensor scenario where 25% of 3D modules populate the forward and backward part of each stave. The production of planar sensors will also allow coverage of 100% of the IBL, in case that option was required. This paper will describe the processing strategy which allowed successful 3D sensor production, some of the Quality Assurance (QA) tests performed during the pre-production phase and the production yield to date.

  9. Power and area efficient 4-bit column-level ADC in a CMOS pixel sensor for the ILD vertex detector

    Science.gov (United States)

    Zhang, L.; Morel, F.; Hu-Guo, Ch; Hu, Y.

    2013-01-01

    A 48 × 64 pixels prototype CMOS pixel sensor (CPS) integrated with 4-bit column-level, self triggered ADCs for the outer layers of the ILD vertex detector (VTX) was developed and fabricated in a 0.35 μm CMOS process with a pixel pitch of 35 μm. The pixel concept combines in-pixel amplification with a correlated double sampling (CDS) operation. The ADCs accommodating the pixel read out in a rolling shutter mode complete the conversion by performing a multi-bit/step approximation. The design was optimised for power saving at sampling frequency. The prototype sensor is currently at the stage of being started testing and evaluation. So what is described is based on post simulation results rather than test data. This 4-bit ADC dissipates, at a 3-V supply and 6.25-MS/s sampling rate, 486 μW in its inactive mode, which is by far the most frequent. This value rises to 714 μW in case of the active mode. Its footprint amounts to 35 × 545 μm2.

  10. Power and area efficient 4-bit column-level ADC in a CMOS pixel sensor for the ILD vertex detector

    International Nuclear Information System (INIS)

    A 48 × 64 pixels prototype CMOS pixel sensor (CPS) integrated with 4-bit column-level, self triggered ADCs for the outer layers of the ILD vertex detector (VTX) was developed and fabricated in a 0.35 μm CMOS process with a pixel pitch of 35 μm. The pixel concept combines in-pixel amplification with a correlated double sampling (CDS) operation. The ADCs accommodating the pixel read out in a rolling shutter mode complete the conversion by performing a multi-bit/step approximation. The design was optimised for power saving at sampling frequency. The prototype sensor is currently at the stage of being started testing and evaluation. So what is described is based on post simulation results rather than test data. This 4-bit ADC dissipates, at a 3-V supply and 6.25-MS/s sampling rate, 486 μW in its inactive mode, which is by far the most frequent. This value rises to 714 μW in case of the active mode. Its footprint amounts to 35 × 545 μm2.

  11. Development of a detector control system for the serially powered ATLAS pixel detector at the HL-LHC

    Energy Technology Data Exchange (ETDEWEB)

    Puellen, Lukas

    2015-02-10

    In the years around 2020 the LHC will be upgraded to the HL-LHC. In terms of this upgrade, the ATLAS detector will also be upgraded. This also includes the pixel detector, the innermost of the sub-detectors in ATLAS. Thereby the powering concept of the pixel detector will be changed to reduce the material budget of the detector. From individual powering of each detector module, the concept changes to serial powering, where all modules of a powering group are connected in series. This change makes the development of a new detector control system (DCS) mandatory. Therefore, a new concept for the ATLAS pixel DCS is being developed at the University of Wuppertal. This concept is split into three paths: a safety path, a control path, and a diagnostics path. The safety path is a hard wired interlock system. The concept of this system will not differ significantly, compared to the interlock system of the current detector. The diagnostics path is embedded into the optical data read-out of the detector and will be used for detector tuning with high precision and granularity. The control path supervises the detector and provides a user interface to the hardware components. A concept for this path, including a prototype and proof-of-principle studies, has been developed in terms of this thesis. The control path consists of the DCS network, a read-out and controlling topology created by two types of ASICs: the DCS controller and the DCS chip. These ASICs measure and control all values, necessary for a safe detector operation in situ. This reduces the number of required cables and hence the material budget of the system. For the communication between these ASICs, two very fault tolerant bus protocols have been chosen: CAN bus carries data from the DCS computers, outside of the detector, to the DCS controllers at the edge of the pixel detector. For the communication between the DCS controller and the DCS chip, which is located close to each detector module, an enhanced I2C

  12. Development of a detector control system for the serially powered ATLAS pixel detector at the HL-LHC

    International Nuclear Information System (INIS)

    In the years around 2020 the LHC will be upgraded to the HL-LHC. In terms of this upgrade, the ATLAS detector will also be upgraded. This also includes the pixel detector, the innermost of the sub-detectors in ATLAS. Thereby the powering concept of the pixel detector will be changed to reduce the material budget of the detector. From individual powering of each detector module, the concept changes to serial powering, where all modules of a powering group are connected in series. This change makes the development of a new detector control system (DCS) mandatory. Therefore, a new concept for the ATLAS pixel DCS is being developed at the University of Wuppertal. This concept is split into three paths: a safety path, a control path, and a diagnostics path. The safety path is a hard wired interlock system. The concept of this system will not differ significantly, compared to the interlock system of the current detector. The diagnostics path is embedded into the optical data read-out of the detector and will be used for detector tuning with high precision and granularity. The control path supervises the detector and provides a user interface to the hardware components. A concept for this path, including a prototype and proof-of-principle studies, has been developed in terms of this thesis. The control path consists of the DCS network, a read-out and controlling topology created by two types of ASICs: the DCS controller and the DCS chip. These ASICs measure and control all values, necessary for a safe detector operation in situ. This reduces the number of required cables and hence the material budget of the system. For the communication between these ASICs, two very fault tolerant bus protocols have been chosen: CAN bus carries data from the DCS computers, outside of the detector, to the DCS controllers at the edge of the pixel detector. For the communication between the DCS controller and the DCS chip, which is located close to each detector module, an enhanced I2C

  13. A 15 × 15 single photon avalanche diode sensor featuring breakdown pixels extraction architecture for efficient data readout

    Science.gov (United States)

    Yang, Xiao; Zhu, Hongbo; Nakura, Toru; Iizuka, Tetsuya; Asada, Kunihiro

    2016-04-01

    This paper proposes a breakdown pixels extraction architecture for single photon avalanche diode (SPAD) based faint light detection systems. The proposed extraction circuit detects the breakdown pixels and only their addresses are readout. Therefore, under the faint light environment, this SPAD-based sensor significantly improves the data readout efficiency. In addition, since the readout sequence is 4× faster than that of the conventional architecture in the dark condition, the proposed system does not need an independent on-chip event detection circuit that consumes additional area and power. A test-of-concept chip with a 15 × 15 SPAD pixels array was fabricated in a 0.18 µm 1P5M standard CMOS process and pinhole diffraction patterns were successfully captured thanks to the high sensitivity of the SPAD sensor. Under the faint light condition, a high-speed readout is verified by measurement and the robustness of the proposed architecture is successfully demonstrated.

  14. First evidence of phase-contrast imaging with laboratory sources and active pixel sensors

    International Nuclear Information System (INIS)

    The aim of the present work is to achieve a first step towards combining the advantages of an innovative X-ray imaging technique-phase-contrast imaging (XPCi)-with those of a new class of sensors, i.e. CMOS-based active pixel sensors (APSs). The advantages of XPCi are well known and include increased image quality and detection of details invisible to conventional techniques, with potential application fields encompassing the medical, biological, industrial and security areas. Vanilla, one of the APSs developed by the MI-3 collaboration (see (http://mi3.shef.ac.uk)), was thoroughly characterised and an appropriate scintillator was selected to provide X-ray sensitivity. During this process, a set of phase-contrast images of different biological samples was acquired by means of the well-established free-space propagation XPCi technique. The obtained results are very encouraging and are in optimum agreement with the predictions of a simulation recently developed by some of the authors thus further supporting its reliability. This paper presents these preliminary results in detail and discusses in brief both the background to this work and its future developments

  15. 50 μm pixel pitch wafer-scale CMOS active pixel sensor x-ray detector for digital breast tomosynthesis

    Science.gov (United States)

    Zhao, C.; Konstantinidis, A. C.; Zheng, Y.; Anaxagoras, T.; Speller, R. D.; Kanicki, J.

    2015-12-01

    Wafer-scale CMOS active pixel sensors (APSs) have been developed recently for x-ray imaging applications. The small pixel pitch and low noise are very promising properties for medical imaging applications such as digital breast tomosynthesis (DBT). In this work, we evaluated experimentally and through modeling the imaging properties of a 50 μm pixel pitch CMOS APS x-ray detector named DynAMITe (Dynamic Range Adjustable for Medical Imaging Technology). A modified cascaded system model was developed for CMOS APS x-ray detectors by taking into account the device nonlinear signal and noise properties. The imaging properties such as modulation transfer function (MTF), noise power spectrum (NPS), and detective quantum efficiency (DQE) were extracted from both measurements and the nonlinear cascaded system analysis. The results show that the DynAMITe x-ray detector achieves a high spatial resolution of 10 mm-1 and a DQE of around 0.5 at spatial frequencies  CMOS APS x-ray detector, image aquisition geometry and image reconstruction techniques should be considered.

  16. Charge Pump Clock Generation PLL for the Data Output Block of the Upgraded ATLAS Pixel Front-End in 130 nm CMOS

    CERN Document Server

    Kruth, A; Arutinov, D; Barbero, M; Gronewald, M; Hemperek, T; Karagounis, M; Krueger, H; Wermes, N; Fougeron, D; Menouni, M; Beccherle, R; Dube, S; Ellege, D; Garcia-Sciveres, M; Gnani, D; Mekkaoui, A; Gromov, V; Kluit, R; Schipper, J

    2009-01-01

    FE-I4 is the 130 nm ATLAS pixel IC currently under development for upgraded Large Hadron Collider (LHC) luminosities. FE-I4 is based on a low-power analog pixel array and digital architecture concepts tuned to higher hit rates [1]. An integrated Phase Locked Loop (PLL) has been developed that locally generates a clock signal for the 160 Mbit/s output data stream from the 40 MHz bunch crossing reference clock. This block is designed for low power, low area consumption and recovers quickly from loss of lock related to single-event transients in the high radiation environment of the ATLAS pixel detector. After a general introduction to the new FE-I4 pixel front-end chip, this work focuses on the FE-I4 output blocks and on a first PLL prototype test chip submitted in early 2009. The PLL is nominally operated from a 1.2V supply and consumes 3.84mW of DC power. Under nominal operating conditions, the control voltage settles to within 2% of its nominal value in less than 700 ns. The nominal operating frequency for t...

  17. ATLAS: A Traffic Load Aware Sensor MAC Design for Collaborative Body Area Sensor Networks

    Directory of Open Access Journals (Sweden)

    Young-Cheol Bang

    2011-12-01

    Full Text Available In collaborative body sensor networks, namely wireless body area networks(WBANs, each of the physical sensor applications is used to collaboratively monitor thehealth status of the human body. The applications of WBANs comprise diverse and dynamictraffic loads such as very low-rate periodic monitoring (i.e., observation data and high-ratetraffic including event-triggered bursts. Therefore, in designing a medium access control(MAC protocol for WBANs, energy conservation should be the primary concern duringlow-traffic periods, whereas a balance between satisfying high-throughput demand andefficient energy usage is necessary during high-traffic times. In this paper, we design atraffic load-aware innovative MAC solution for WBANs, called ATLAS. The design exploitsthe superframe structure of the IEEE 802.15.4 standard, and it adaptively uses the contentionaccess period (CAP, contention free period (CFP and inactive period (IP of the superframebased on estimated traffic load, by applying a dynamic “wh” (whenever which is requiredapproach. Unlike earlier work, the proposed MAC design includes load estimation fornetwork load-status awareness and a multi-hop communication pattern in order to preventenergy loss associated with long range transmission. Finally, ATLAS is evaluated throughextensive simulations in ns-2 and the results demonstrate the effectiveness of the protocol.

  18. ATLAS: a traffic load aware sensor MAC design for collaborative body area sensor networks.

    Science.gov (United States)

    Rahman, Md Obaidur; Hong, Choong Seon; Lee, Sungwon; Bang, Young-Cheol

    2011-01-01

    In collaborative body sensor networks, namely wireless body area networks (WBANs), each of the physical sensor applications is used to collaboratively monitor the health status of the human body. The applications of WBANs comprise diverse and dynamic traffic loads such as very low-rate periodic monitoring (i.e., observation) data and high-rate traffic including event-triggered bursts. Therefore, in designing a medium access control (MAC) protocol for WBANs, energy conservation should be the primary concern during low-traffic periods, whereas a balance between satisfying high-throughput demand and efficient energy usage is necessary during high-traffic times. In this paper, we design a traffic load-aware innovative MAC solution for WBANs, called ATLAS. The design exploits the superframe structure of the IEEE 802.15.4 standard, and it adaptively uses the contention access period (CAP), contention free period (CFP) and inactive period (IP) of the superframe based on estimated traffic load, by applying a dynamic "wh" (whenever which is required) approach. Unlike earlier work, the proposed MAC design includes load estimation for network load-status awareness and a multi-hop communication pattern in order to prevent energy loss associated with long range transmission. Finally, ATLAS is evaluated through extensive simulations in ns-2 and the results demonstrate the effectiveness of the protocol. PMID:22247681

  19. Development of pixel detectors for the IBL and HL-LHC ATLAS experiment upgrade

    CERN Document Server

    Baselga Bacardit, Marta

    2016-03-18

    This thesis presents the development of advanced silicon technology detectors fabricated at CNM-Barcelona for High Energy Physics (HEP) experiments. The pixel size of the tracking silicon detectors for the upgrade of the HL-LHC will have to decrease in size in order to enhance the resolution in position for the measurements and they need to have lower occupancy for the electronics. The future experiments at CERN will cope with fuences up to 2 x 10^^16 neq/cm2, and the smaller 3D silicon detectors will have less trapping of the electron-holes generated in the bulk leading to a better performance under high radiation environment. This thesis studies silicon detectors fabricated at CNM-Barcelona applied to HEP experiments with two different kinds of novel technologies: 3D and Low Gain Avalanche Detectors (LGAD). The 3D detectors make it possible to reduce the size of the depleted region inside the detector and to work at lower voltages, whereas the LGAD detectors have an intrinsic gain which increases the collec...

  20. A Dynamic Range Expansion Technique for CMOS Image Sensors with Dual Charge Storage in a Pixel and Multiple Sampling

    OpenAIRE

    Shinya Itoh; Shoji Kawahito; Suhaidi Shafie

    2008-01-01

    A dynamic range expansion technique for CMOS image sensors with dual charge storage in a pixel and multiple sampling technique is presented. Each pixel contains a photodiode and a storage diode which is connected to the photodiode via a separation gate. The sensitivity of the signal charge in the storage diode can be controlled either by a separation gate which limits the charge to flow into the storage diode or by controlling the accumulation time in the storage diode. The operation of the s...

  1. Evaluation of a SOI pixel sensor with thick depletion layer for future X-ray astronomical missions

    Science.gov (United States)

    Nakashima, Shinya; Ryu, Sykyo Gando; Tsuru, Takeshi Go; Takeda, Ayaki; Arai, Yasuo; Miyoshi, Toshinobu; Ichimiya, Ryo; Ikemoto, Yukiko; Imamura, Toshifumi; Ohmoto, Takafumi; Iwata, Atsushi

    2012-03-01

    We report on the evaluation test of our novel pixel sensor named "XRPIX1-FZ" which is developed for the future X-ray astronomy mission. The mean gain of XRPIX1-FZ is 3.3 µV/e. and the dispersion of the gain among the pixels is 1% in the standard deviation. We confirmed the energy resolution of 260 eV in FWHM at 8 keV. We achieved the full depletion (250 µm) at 30 V back bias voltage.

  2. Flexible Gd2O2S:Tb scintillators pixelated with polyethylene microstructures for digital x-ray image sensors

    International Nuclear Information System (INIS)

    Flexible scintillators for digital x-ray image sensors were designed, fabricated and characterized. In these scintillaotrs, terbium-doped gadolinium oxysulfide (Gd2O2S:Tb) scintillator pixels were embedded into a polyethylene (PE) substrate. To evaluate the difference in the spatial resolution according to the pixel size, we designed three scintillators with pixels of different pitch sizes: 50 µm pitch size (P50), 100 µm pitch size (P100) and 200 µm pitch size (P200). Because of the high flexibility and good formability, polyethylene was used as the substrate of the scintillator. To fabricate nickel micromolds with high-aspect-ratio microstructures, two microfabrication techniques were employed: silicon dry-etching using a deep reactive ion etching (DRIE) process and nickel electroforming. The pixelated PE microstructures were fabricated by a hot embossing process. Because the solution-type Gd2O2S:Tb precursor can be handled at room temperature, Gd2O2S:Tb was used as the scintillator material. The measured sensitivities of the P50 and P100 models were, respectively, about 65% and 97% of that of the P200 model. The lower sensitivity values of the models with a small pitch size were due to two factors, such as the different pixel heights and the different fill factors. Because a scintillator with a small pixel size has a low fill factor, the sensitivity of the scintillator decreases as the pixel size decreases. The fill factors of the P50, P100 and P200 models were 36%, 49% and 56.25%, respectively. On the other hand, the spatial resolution of the scintillator increases as the pixel size decreases. Therefore, P50 gave the best spatial resolution among the designed models. The spatial frequency at 10% of the modulation transfer function (MTF) with P50 was 13.5 mm−1, while that with P200 was 10.0 mm−1. The resolution pattern and the tooth x-ray images obtained from a scintillator with a smaller pixel size was also clearer than that obtained from a scintillator

  3. A Monolithic Active Pixel Sensor for ionizing radiation using a 180 nm HV-SOI process

    International Nuclear Information System (INIS)

    An improved SOI-MAPS (Silicon On Insulator Monolithic Active Pixel Sensor) for ionizing radiation based on thick-film High Voltage SOI technology (HV-SOI) has been developed. Similar to existing Fully Depleted SOI-based (FD-SOI) MAPS, a buried silicon oxide inter-dielectric (BOX) layer is used to separate the CMOS electronics from the handle wafer which is used as a depleted charge collection layer. FD-SOI MAPS suffers from radiation damage such as transistor threshold voltage shifts due to charge traps in the oxide layers and charge states created at the silicon oxide boundaries (back gate effect). The X-FAB 180-nm HV-SOI technology offers an additional isolation by deep non-depleted implant between the BOX layer and the active circuitry which mitigates this problem. Therefore we see in this technology a high potential to implement radiation-tolerant MAPS with fast charge collection property. The design and measurement results from a first prototype are presented including charge collection in neutron irradiated samples

  4. A Monolithic active pixel sensor for ionizing radiation using a 180nm HV-SOI process

    CERN Document Server

    Hemperek, Tomasz; Krüger, Hans; Wermes, Norbert

    2014-01-01

    An improved SOI-MAPS (Silicon On Insulator Monolithic Active Pixel Sensor) for ionizing radiation based on Partially Depleted High Voltage SOI technology (PD-SOI) has been developed. Similar to existing Fully Depleted SOI-based (FD-SOI) MAPS, a buried silicon oxide inter-dielectric (BOX) layer is used to separate the CMOS electronics from the handle wafer which is used as a depleted charge collection layer while FD-SOI MAPS suffer from radiation damage such as transistor threshold voltage shifts due to charge traps in the oxide layers and charge states created at the silicon oxide boundaries (back gate effect). The XFAB 180-nm HV-SOI technology offers an additional isolation by deep non-depleted implant between the BOX layer and the active circuitry witch mitigates this problem. Therefore we see in this technology a high potential to implement radiation-tolerant MAPS with fast charge collection property. The design and measurement results from a first prototype are presented including charge collection in neu...

  5. A Monolithic Active Pixel Sensor for ionizing radiation using a 180 nm HV-SOI process

    Energy Technology Data Exchange (ETDEWEB)

    Hemperek, Tomasz, E-mail: hemperek@uni-bonn.de; Kishishita, Tetsuichi; Krüger, Hans; Wermes, Norbert

    2015-10-01

    An improved SOI-MAPS (Silicon On Insulator Monolithic Active Pixel Sensor) for ionizing radiation based on thick-film High Voltage SOI technology (HV-SOI) has been developed. Similar to existing Fully Depleted SOI-based (FD-SOI) MAPS, a buried silicon oxide inter-dielectric (BOX) layer is used to separate the CMOS electronics from the handle wafer which is used as a depleted charge collection layer. FD-SOI MAPS suffers from radiation damage such as transistor threshold voltage shifts due to charge traps in the oxide layers and charge states created at the silicon oxide boundaries (back gate effect). The X-FAB 180-nm HV-SOI technology offers an additional isolation by deep non-depleted implant between the BOX layer and the active circuitry which mitigates this problem. Therefore we see in this technology a high potential to implement radiation-tolerant MAPS with fast charge collection property. The design and measurement results from a first prototype are presented including charge collection in neutron irradiated samples.

  6. The upgraded Pixel detector and the commissioning of the Inner Detector tracking of the ATLAS experiment for Run-2 at the Large Hadron Collider

    CERN Document Server

    AUTHOR|(INSPIRE)INSPIRE-00019188; The ATLAS collaboration

    2016-01-01

    Run-2 of the Large Hadron Collider (LHC) will provide new challenges to track and vertex reconstruction with higher energies, denser jets and higher rates. Therefore the ATLAS experiment has constructed the first 4-layer Pixel detector in HEP, installing a new Pixel layer, also called Insertable B-Layer (IBL). The IBL is a fourth layer of pixel detectors, and has been installed in May 2014 at a radius of 3.3 cm between the existing Pixel Detector and a new smaller radius beam-pipe. The new detector, built to cope with the high radiation and expected occupancy, is the first large scale application of 3D detectors and CMOS 130~nm technology. In addition, the Pixel detector was refurbished with a new service quarter panel to recover about 3% of defective modules lost during Run-1 and a new optical readout system to readout the data at higher speed while reducing the occupancy when running with increased luminosity. Complementing detector improvements, many improvements to Inner Detector track and vertex reconstr...

  7. Remote sensing of Alaskan boreal forest fires at the pixel and sub-pixel level: multi-sensor approaches and sensitivity analysis

    Science.gov (United States)

    Waigl, C.; Stuefer, M.; Prakash, A.

    2013-12-01

    Wildfire is the main disturbance regime of the boreal forest ecosystem, a region acutely sensitive to climate change. Large fires impact the carbon cycle, permafrost, and air quality on a regional and even hemispheric scale. Because of their significance as a hazard to human health and economic activity, monitoring wildfires is relevant not only to science but also to government agencies. The goal of this study is to develop pathways towards a near real-time assessment of fire characteristics in the boreal zones of Alaska based on satellite remote sensing data. We map the location of active burn areas and derive fire parameters such as fire temperature, intensity, stage (smoldering or flaming), emission injection points, carbon consumed, and energy released. For monitoring wildfires in the sub-arctic region, we benefit from the high temporal resolution of data (as high as 8 images a day) from MODIS on the Aqua and Terra platforms and VIIRS on NPP/Suomi, downlinked and processed to level 1 by the Geographic Information Network of Alaska at the University of Alaska Fairbanks. To transcend the low spatial resolution of these sensors, a sub-pixel analysis is carried out. By applying techniques from Bayesian inverse modeling to Dozier's two-component approach, uncertainties and sensitivity of the retrieved fire temperatures and fractional pixel areas to background temperature and atmospheric factors are assessed. A set of test cases - large fires from the 2004 to 2013 fire seasons complemented by a selection of smaller burns at the lower end of the MODIS detection threshold - is used to evaluate the methodology. While the VIIRS principal fire detection band M13 (centered at 4.05 μm, similar to MODIS bands 21 and 22 at 3.959 μm) does not usually saturate for Alaskan wildfire areas, the thermal IR band M15 (10.763 μm, comparable to MODIS band 31 at 11.03 μm) indeed saturates for a percentage, though not all, of the fire pixels of intense burns. As this limits the

  8. 50 μm pixel pitch wafer-scale CMOS active pixel sensor x-ray detector for digital breast tomosynthesis

    International Nuclear Information System (INIS)

    Wafer-scale CMOS active pixel sensors (APSs) have been developed recently for x-ray imaging applications. The small pixel pitch and low noise are very promising properties for medical imaging applications such as digital breast tomosynthesis (DBT). In this work, we evaluated experimentally and through modeling the imaging properties of a 50 μm pixel pitch CMOS APS x-ray detector named DynAMITe (Dynamic Range Adjustable for Medical Imaging Technology). A modified cascaded system model was developed for CMOS APS x-ray detectors by taking into account the device nonlinear signal and noise properties. The imaging properties such as modulation transfer function (MTF), noise power spectrum (NPS), and detective quantum efficiency (DQE) were extracted from both measurements and the nonlinear cascaded system analysis. The results show that the DynAMITe x-ray detector achieves a high spatial resolution of 10 mm−1 and a DQE of around 0.5 at spatial frequencies  <1 mm−1. In addition, the modeling results were used to calculate the image signal-to-noise ratio (SNRi) of microcalcifications at various mean glandular dose (MGD). For an average breast (5 cm thickness, 50% glandular fraction), 165 μm microcalcifications can be distinguished at a MGD of 27% lower than the clinical value (∼1.3 mGy). To detect 100 μm microcalcifications, further optimizations of the CMOS APS x-ray detector, image aquisition geometry and image reconstruction techniques should be considered. (paper)

  9. Development of novel n{sup +}-in-p Silicon Planar Pixel Sensors for HL-LHC

    Energy Technology Data Exchange (ETDEWEB)

    Unno, Y., E-mail: yoshinobu.unno@kek.jp [Institute of Particle and Nuclear Study, High Energy Accelerator Research Organization (KEK), 1-1 Oho, Tsukuba-shi, Ibaraki-ken 305-0801 (Japan); Gallrapp, C. [European Organization for Nuclear Research (CERN), CH-1211, Geneve 23 (Switzerland); Hori, R. [Institute of Particle and Nuclear Study, High Energy Accelerator Research Organization (KEK), 1-1 Oho, Tsukuba-shi, Ibaraki-ken 305-0801 (Japan); Idarraga, J. [Institut Universitaire de Technologie d' Orsay, Universite de Paris Sud, plateau de Moulon, 91400 Orsay (France); Mitsui, S. [The Graduate University for Advanced Studies (SOKENDAI), 1-1 Oho, Tsukuba-shi, Ibaraki-ken 305-0801 (Japan); Nagai, R.; Kishida, T. [Department of Physics, Tokyo Institute of Technology, 2-12-1 Ookayama, Meguro-ku, Tokyo 152-8550 (Japan); Ishida, A.; Ishihara, M.; Kamada, S.; Inuzuka, T.; Yamamura, K. [Solid-State Division, Hamamatsu Photonics K.K., 1126-1 Ichino-cho, Higashi-ku, Hamamatsu-shi, Shizuoka 435-8558 (Japan); Hara, K. [Institute of Pure and Applied Sciences, University of Tsukuba, 1-1-1 Tennoudai, Tsukuba-shi, Ibaraki 305-8571 (Japan); Ikegami, Y. [Institute of Particle and Nuclear Study, High Energy Accelerator Research Organization (KEK), 1-1 Oho, Tsukuba-shi, Ibaraki-ken 305-0801 (Japan); Jinnouchi, O. [Department of Physics, Tokyo Institute of Technology, 2-12-1 Ookayama, Meguro-ku, Tokyo 152-8550 (Japan); Lounis, A. [Institut Universitaire de Technologie d' Orsay, Universite de Paris Sud, plateau de Moulon, 91400 Orsay (France); Takahashi, Y. [Institute of Pure and Applied Sciences, University of Tsukuba, 1-1-1 Tennoudai, Tsukuba-shi, Ibaraki 305-8571 (Japan); Takubo, Y.; Terada, S. [Institute of Particle and Nuclear Study, High Energy Accelerator Research Organization (KEK), 1-1 Oho, Tsukuba-shi, Ibaraki-ken 305-0801 (Japan); Hanagaki, K. [Department of Physics, Osaka University, Machikaneyama-cho, Toyonaka-shi, Osaka 560-0043 (Japan); and others

    2013-01-21

    We have been developing highly radiation-tolerant n{sup +}-in-p planar pixel sensors for use in the high-luminosity LHC. Novel n{sup +}-in-p structures were made using various combinations of the bias structures (punch-through or polysilicon resistor), isolation structures (p-stop or p-spray), and thicknesses (320μm or 150μm). The 1-chip pixel modules with thin FE-I4 pixel sensors were evaluated using test beams, before and after 2×10{sup 15}n{sub eq}/cm{sup 2} irradiation. The full depletion voltages were estimated to be 44±10 V and 380±70 V, in the non-irradiated and the irradiated modules, respectively. A reduction of efficiency was observed in the vicinity of the four pixel corners and underneath the bias rail after the irradiation. The global efficiencies were >99% and >95% in the non-irradiated and the irradiated modules, respectively. The collected charges were uniform in the depth direction at bias voltages well above the full depletion voltages. The encapsulation of vulnerable edges with adhesive or parylene prevented HV sparking. Bump bonding with the SnAg solder bumps was performed at HPK with 150μm- and 320μm-thick sensors and chips. No disconnection of bumps was observed after 10 thermal cycles between −40 and +50 °C, with a temperature slew rate of >70K/min. -- Highlights: ► Novel n{sup +}-in-p pixel sensors were made of punch-through/poly-Si biasing, p-stop/p-spray isolation, and 320/150μm thickness. ► The thin pixel modules were evaluated in testbeams, before and after 2×10{sup 15}n{sub eq}/cm{sup 2} irradiation. ► A reduction of efficiency was observed in the vicinity of four-corners of pixels and underneath the bias rail after irradiation. ► Encapsulating the vulnerable edges with adhesive or parylene achieved prevention of HV sparking up to 1000 V. ► No disconnection of SnAg bump-bonds was observed in dummy modules after 10 thermal cycles with a slew rate of >70K/min.

  10. Performance of a prototype 32×32 pixel indirect x-ray imager based on a lateral selenium passive pixel sensor

    Science.gov (United States)

    Keshavarzi, Rasoul; Wang, Kai; Yazdandoost, Mohammad Y.; Shin, Kyung-Wook; Chen, Feng; Majid, Shaikh Hasibul; Abbaszadeh, Shiva; Karim, Karim S.

    2012-03-01

    An interface has been developed to capture frames taken by X-ray array imagers up to 64×64 pixels. An application specific integrated circuit (ASIC) designed solely for X-ray flat panel imaging readout circuitry, manufactured by FLIR® called Indigo (also known as ISC9717), was used as part of charge-amplifier block. An Altera Cyclone II FPGA is used to serve three purposes: Create pulses required for gate-driver block, Receive fast-stream data coming from the Indigo chip, and Send data through RS-232 protocol over a serial cable to a personal computer. Initial results for a 32×32 passive pixel sensor (PPS) with lateral amorphous Selenium metal-semiconductor-metal (MSM) photodetector were presented in [1]. This work focuses more on methods used to improve the images obtained from the array. Sharper images produced in sync with the light source are presented. In addition, insight into array readout circuitry and capturing a frame from an array is discussed.

  11. Studies Of Radiation Effects On Pixel Sensors For The Cms Experiment And Design Of Radiation Hard Sensors For Future Upgrades Of Lhc Upgrade

    CERN Document Server

    Roy, A

    2005-01-01

    The CMS experiment which is currently under construction at the Large Hadron Collider (LHC) at CERN (Geneva, Switzerland) will contain a pixel detector that provides in its final configuration three space points per track close to the interaction point of the colliding beams. The readout chip is expected to survive a particle fluence of 6 × 1014 neq/cm2 and therefore all components of the hybrid pixel detector have to perform well up to at least this fluence. This requires the silicon to operate partially depleted after irradiation and therefore “n in n” concept has been chosen. In order to perform IV tests on wafers to certify the quality of sensors and to hold accidentally unconnected pixels close to ground potential a resistive path between the pixels has been implemented by openings in the p -stop implants surrounding every pixel cell. Prototypes of such sensors have been produced by two different companies and their properties have been extensively tested before and after ir...

  12. The Silicon Microstrip Sensors of the ATLAS SemiConductor Tracker

    CERN Document Server

    Ahmad, A; Allport, P P; Alonso, J; Andricek, L; Apsimon, R J; Barr, A J; Bates, R L; Beck, G A; Bell, P J; Belymam, A; Benes, J; Berg, C M; Bernabeu, J; Bethke, S; Bingefors, N; Bizzell, J P; Bohm, J; Brenner, R; Brodbeck, T J; Bruckman De Renstrom, P; Buttar, C M; Campbell, D; Carpentieri, C; Carter, A A; Carter, J R; Charlton, D G; Casse, G-L; Chilingarov, A; Cindro, V; Ciocio, A; Civera, J V; Clark, A G; Colijn, A-P; Costa, M J; Dabrowski, W; Danielsen, K M; Dawson, I; Demirkoz, B; Dervan, P; Dolezal, Z; Dorholt, O; Duerdoth, I P; Dwuznik, M; Eckert, S; Ekelöf, T; Eklund, L; Escobar, C; Fasching, D; Feld, L; Ferguson, D P S; Ferrere, D; Fortin, R; Foster, J M; Fox, H; French, R; Fromant, B P; Fujita, K; Fuster, J; Gadomski, S; Gallop, B J; Garcia, C; Garcia-Navarro, J E; Gibson, M D; Gonzalez, S; Gonzalez-Sevilla, S; Goodrick, M J; Gornicki, E; Green, C; Greenall, A; Grigson, C; Grillo, A A; Grosse-Knetter, J; Haber, C; Handa, T; Hara, K; Harper, R S; Hartjes, F G; Hashizaki, T; Hauff, D; Hessey, N P; Hill, J C; Hollins, T I; Holt, S; Horazdovsky, T; Hornung, M; Hovland, K M; Hughes, G; Huse, T; Ikegami, Y; Iwata, Y; Jackson, J N; Jakobs, K; Jared, R C; Johansen, L G; Jones, R W L; Jones, T J; de Jong, P; Joseph, J; Jovanovic, P; Kaplon, J; Kato, Y; Ketterer, C; Kindervaag, I M; Kodys, P; Koffeman, E; Kohriki, T; Kohout, Z; Kondo, T; Koperny, S; van der Kraaij, E; Kral, V; Kramberger, G; Kudlaty, J; Lacasta, C; Limper, M; Linhart, V; Llosa, G; Lozano, M; Ludwig, I; Ludwig, J; Lutz, G; Macpherson, A; McMahon, S J; Macina, D; Magrath, C A; Malecki, P; Mandic, I; Marti-Garcia, S; Matsuo, T; Meinhardt, J; Mellado, B; Mercer, I J; Mikestikova, M; Mikuz, M; Minano, M; Mistry, J; Mitsou, V; Modesto, P; Mohn, B; Molloy, S D; Moorhead, G; Moraes, A; Morgan, D; Morone, M C; Morris, J; Moser, H-G; Moszczynski, A; Muijs, A J M; Nagai, K; Nakamura, Y; Nakano, I; Nicholson, R; Niinikoski, T; Nisius, R; Ohsugi, T; O'Shea, V; Oye, O K; Parzefall, U; Pater, J R; Pernegger, H; Phillips, P W; Posisil, S; Ratoff, P N; Reznicek, P; Richardson, J D; Richter, R H; Robinson, D; Roe, S; Ruggiero, G; Runge, K; Sadrozinski, H F W; Sandaker, H; Schieck, J; Seiden, A; Shinma, S; Siegrist, J; Sloan, T; Smith, N A; Snow, S W; Solar, M; Solberg, A; Sopko, B; Sospedra, L; Spieler, H; Stanecka, E; Stapnes, S; Stastny, J; Stelzer, F; Stradling, A; Stugu, B; Takashima, R; Tanaka, R; Taylor, G; Terada, S; Thompson, R J; Titov, M; Tomeda, Y; Tovey, D R; Turala, M; Turner, P R; Tyndel, M; Ullan, M; Unno, Y; Vickey, T; Vos, M; Wallny, R; Weilhammer, P; Wells, P S; Wilson, J A; Wolter, M; Wormald, M; Wu, S L; Yamashita, T; Zontar, D; Zsenei, A

    2007-01-01

    This paper describes the AC-coupled, single-sided, p-in-n silicon microstrip sensors used in the SemiConductor Tracker (SCT) of the ATLAS experiment at the CERN Large Hadron Collider (LHC). The sensor requirements, specifications and designs are discussed, together with the qualification and quality assurance procedures adopted for their production. The measured sensor performance is presented, both initially and after irradiation to the fluence anticipated after 10 years of LHC operation. The sensors are now successfully assembled within the detecting modules of the SCT, and the SCT tracker is completed and integrated within the ATLAS Inner Detector. Hamamatsu Photonics Ltd supplied 92.2% of the 15,392 installed sensors, with the remainder supplied by CiS.

  13. A low-power and small-area column-level ADC for high frame-rate CMOS pixel sensor

    Science.gov (United States)

    Zhang, L.; Morel, F.; Hu-Guo, C.; Hu, Y.

    2014-07-01

    CMOS pixel sensors (CPS) have demonstrated performances meeting the specifications of the International Linear Collider (ILC) vertex detector (VTX). This paper presents a low-power and small-area 4-bit column-level analog-to-digital converter (ADC) for CMOS pixel sensors. The ADC employs a self-timed trigger and completes the conversion by performing a multi-bit/step approximation. As in the outer layers of the ILC vertex detector hit density is of the order of a few per thousand, in order to reduce power consumption, the ADC is designed to work in two modes: active mode and idle mode. The ADC is fabricated in a 0.35 μm CMOS process with a pixel pitch of 35 μm. It is implemented with 48 columns in a sensor prototype. Each column ADC covers an area of 35 ×545 μm2. The measured temporal noise and Fixed Pattern Noise (FPN) are 0.96 mV and 0.40 mV, respectively. The power consumption, for a 3 V supply and 6.25 MS/s sampling rate, is 486 μW during idle time, which is by far the most frequently employed one. This value rises to 714 μW in the case of the active mode. The measured differential nonlinearity (DNL) and integral nonlinearity (INL) are 0.49/-0.28 LSB and 0.29/-0.20 LSB, respectively.

  14. K-edge imaging with the XPAD3 hybrid pixel detector, direct comparison of CdTe and Si sensors

    International Nuclear Information System (INIS)

    We investigate the improvement from the use of high-Z CdTe sensors for pre-clinical K-edge imaging with the hybrid pixel detectors XPAD3. We compare XPAD3 chips bump bonded to Si or CdTe sensors in identical experimental conditions. Image performance for narrow energy bin acquisitions and contrast-to-noise ratios of K-edge images are presented and compared. CdTe sensors achieve signal-to-noise ratios at least three times higher than Si sensors within narrow energy bins, thanks to their much higher detection efficiency. Nevertheless Si sensors provide better contrast-to-noise ratios in K-edge imaging when working at equivalent counting statistics, due to their better estimation of the attenuation coefficient of the contrast agent. Results are compared to simulated data in the case of the XPAD3/Si detector. Good agreement is observed when including charge sharing between pixels, which have a strong impact on contrast-to-noise ratios in K-edge images. (paper)

  15. K-edge imaging with the XPAD3 hybrid pixel detector, direct comparison of CdTe and Si sensors

    Science.gov (United States)

    Cassol, F.; Portal, L.; Graber-Bolis, J.; Perez-Ponce, H.; Dupont, M.; Kronland, C.; Boursier, Y.; Blanc, N.; Bompard, F.; Boudet, N.; Buton, C.; Clémens, J. C.; Dawiec, A.; Debarbieux, F.; Delpierre, P.; Hustache, S.; Vigeolas, E.; Morel, C.

    2015-07-01

    We investigate the improvement from the use of high-Z CdTe sensors for pre-clinical K-edge imaging with the hybrid pixel detectors XPAD3. We compare XPAD3 chips bump bonded to Si or CdTe sensors in identical experimental conditions. Image performance for narrow energy bin acquisitions and contrast-to-noise ratios of K-edge images are presented and compared. CdTe sensors achieve signal-to-noise ratios at least three times higher than Si sensors within narrow energy bins, thanks to their much higher detection efficiency. Nevertheless Si sensors provide better contrast-to-noise ratios in K-edge imaging when working at equivalent counting statistics, due to their better estimation of the attenuation coefficient of the contrast agent. Results are compared to simulated data in the case of the XPAD3/Si detector. Good agreement is observed when including charge sharing between pixels, which have a strong impact on contrast-to-noise ratios in K-edge images.

  16. Test results of the first 3D-IC prototype chip developed in the framework of HL-LHC/ATLAS hybrid pixel upgrade

    CERN Document Server

    Pangaud, P; Barbero, M; Bompard, F; Breugnon, P; Clemens, J C; Fougeron, D; Garcia-Sciveres, M; Godiot, S; Hemperek, T; Krüger, H; Obermann, T; Rozanov, S; Wermes, N

    2014-01-01

    The ATLAS pixel detector needs to handle this new challenging environment. As a consequence, 3D integrated technologies are pursued with the target of offering higher spatial resolution, very good signal to noise ratio and unprecedented radiation hardness. We present here the test results of the first 3D prototype chip developed in the GlobalFoundries 130 nm technology processed by the Tezzaron Company, submitted within the 3D-IC consortium for which a qualification program was developed. Reliability and influence on the behavior of the integrated devices due to the presence of the Bond Interface (BI) and of the Through Silicon Via (TSV) connections, ...

  17. Track parameter resolution study of a pixel only detector for LHC geometry and future high rate experiments

    International Nuclear Information System (INIS)

    Recent progress in pixel detector technology in general and in the HV-MAPS technology in particular make it feasible to construct an all-silicon pixel detector for large scale particle experiments like ATLAS or CMS. Previous studies have indicated that six to nine layers of pixel sensors, in comparison to the 14 detector layers planned for Inner Tracker ATLAS upgrade, are sufficient to reliably reconstruct particle trajectories. The performance of an all-pixel detector and the minimum number of required pixel layers is studied based on a full GEANT simulation for high luminosity conditions at the upgraded LHC. Furthermore, the ability of an all-pixel detector to form trigger decisions using a special triplet pixel layer design is studied. Such a design could be used to reconstruct all tracks originating from the proton-proton interaction at the first hardware level at 40 MHz collision frequency.

  18. Track parameter resolution study of a pixel only detector for LHC geometry and future high rate experiments

    Energy Technology Data Exchange (ETDEWEB)

    Blago, Michele Piero; Schoening, Andre [Physikalisches Institut, Heidelberg Univ. (Germany)

    2015-07-01

    Recent progress in pixel detector technology in general and in the HV-MAPS technology in particular make it feasible to construct an all-silicon pixel detector for large scale particle experiments like ATLAS or CMS. Previous studies have indicated that six to nine layers of pixel sensors, in comparison to the 14 detector layers planned for Inner Tracker ATLAS upgrade, are sufficient to reliably reconstruct particle trajectories. The performance of an all-pixel detector and the minimum number of required pixel layers is studied based on a full GEANT simulation for high luminosity conditions at the upgraded LHC. Furthermore, the ability of an all-pixel detector to form trigger decisions using a special triplet pixel layer design is studied. Such a design could be used to reconstruct all tracks originating from the proton-proton interaction at the first hardware level at 40 MHz collision frequency.

  19. The ATLAS Diamond Beam Monitor

    CERN Document Server

    Schaefer, Douglas; The ATLAS collaboration

    2015-01-01

    After the first three years of the LHC running the ATLAS experiment extracted it's pixel detector system to refurbish and re-position the optical readout drivers and install a new barrel layer of pixels. The experiment has also taken advantage of this access to also install a set of beam monitoring telescopes with pixel sensors, four each in the forward and backward regions. These telescopes were assembled based on chemical vapour deposited (CVD) diamond sensors to survive in this high radiation environment without needing extensive cooling. This talk will describe the lessons learned in construction and commissioning of the ATLAS x Diamond Beam Monitor (DBM). We will show results from the construction quality assurance tests, commissioning performance, including results from cosmic ray running in early 2015 and also expected first results from LHC run 2 collisions.

  20. A low-power and small-area column-level ADC for high frame-rate CMOS pixel sensor

    International Nuclear Information System (INIS)

    CMOS pixel sensors (CPS) have demonstrated performances meeting the specifications of the International Linear Collider (ILC) vertex detector (VTX). This paper presents a low-power and small-area 4-bit column-level analog-to-digital converter (ADC) for CMOS pixel sensors. The ADC employs a self-timed trigger and completes the conversion by performing a multi-bit/step approximation. As in the outer layers of the ILC vertex detector hit density is of the order of a few per thousand, in order to reduce power consumption, the ADC is designed to work in two modes: active mode and idle mode. The ADC is fabricated in a 0.35 μm CMOS process with a pixel pitch of 35 μm. It is implemented with 48 columns in a sensor prototype. Each column ADC covers an area of 35 ×545 μm2. The measured temporal noise and Fixed Pattern Noise (FPN) are 0.96 mV and 0.40 mV, respectively. The power consumption, for a 3 V supply and 6.25 MS/s sampling rate, is 486 μW during idle time, which is by far the most frequently employed one. This value rises to 714 μW in the case of the active mode. The measured differential nonlinearity (DNL) and integral nonlinearity (INL) are 0.49/−0.28 LSB and 0.29/−0.20 LSB, respectively. - Highlights: • CMOS sensor integrated with column-level ADC is proposed for ILC VTX outer layers. • A low-power and small-area column-level ADC for high frame-rate CPS is presented. • The test results demonstrate the power and area efficiency. • The architecture is suitable for the outer layer CMOS sensors