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Sample records for atlas pixel chip

  1. Pixel readout chip for the ATLAS experiment

    CERN Document Server

    Ackers, M; Blanquart, L; Bonzom, V; Comes, G; Fischer, P; Keil, M; Kühl, T; Meuser, S; Delpierre, P A; Treis, J; Raith, B A; Wermes, N

    1999-01-01

    Pixel detectors with a high granularity and a very large number of sensitive elements (cells) are a very recent development used for high precision particle detection. At the Large Hadron Collider LHC at CERN (Geneva) a pixel detector with 1.4*10/sup 8/ individual pixel cells is developed for the ATLAS detector. The concept is a hybrid detector. Consisting of a pixel sensor connected to a pixel electronics chip by bump and flip chip technology in one-to-one cell correspondence. The development and prototype results of the pixel front end chip are presented together with the physical and technical requirements to be met at LHC. Lab measurements are reported. (6 refs).

  2. Dynamic Efficiency Measurements for Irradiated ATLAS Pixel Single Chip Modules

    CERN Document Server

    Pfaff, Mike; Grosse-Knetter, Jorn

    2011-01-01

    The ATLAS pixel detector is the innermost subdetector of the ATLAS experiment. Due to this, the pixel detector has to be particularly radiation hard. In this diploma thesis effects on the sensor and the electronics which are caused by irradiation are examined. It is shown how the behaviour changes between an unirradiated sample and a irradiated sample, which was treated with the same radiation dose that is expected at the end of the lifetime of ATLAS. For this study a laser system, which is used for dynamic efficiency measurements was constructed. Furthermore, the behaviour of the noise during the detection of a particle was evaluated studied.

  3. SEU tolerant memory design for the ATLAS pixel readout chip

    CERN Document Server

    Menouni, M; Backhaus, M; Barbero, M; Beccherle, R; Breugnon, P; Caminada, L; Dube, S; Darbo, G; Fleury, J; Fougeron, D; Garcia-Sciveres, M; Gensolen, F; Gnani, D; Gonella, L; Gromov, V; Hemperek, T; Jensen, F; karagounis, M; Kluit, R; Krüger, G; Kruth, A; Lu, Y; Mekkaoui, A; Rozanov, A; Schipper, J.D; Zivkovic, V

    2013-01-01

    The FE-I4 chip for the B-layer upgrade is designed in a 130 nm CMOS process. For this design, configuration memories are based on the DICE latches where layout considerations are followed to improve the tolerance to SEU. Tests have shown that DICE latches for which layout approaches are adopted are 30 times more tolerant to SEU than the standard DICE latches. To prepare for the new pixel readout chip planned for the future upgrades, a prototype chip containing 512 pixels has been designed in a 65 nm CMOS process and a new approach is adopted for SEU tolerant latches. Results in terms of SEU and TID tolerance are presented.

  4. FE-I4, the New ATLAS Pixel Chip for Upgraded LHC Luminosities

    CERN Document Server

    "Barbero, M; The ATLAS collaboration

    2009-01-01

    The new ATLAS pixel chip FE-I4 is being developed for use in upgraded luminosity environments, in the framework of the Insertable B-Layer (IBL) project but also for the outer pixel layers of Super-LHC. FE-I4 is designed in a 130 nm technology and is based on an array of 80 by 336 pixels, each 50×250 μm2 and consisting of analog and digital sections. The analog pixel section is designed for low power consumption and compatibility to several sensor candidates. The digital architecture is based on a 4 pixel unit called region, which allows for a power-efficient, low recording inefficiency design, and provides an elegant solution to the problem of timewalk. The chip periphery contains a control block, powering blocks, a data reformatting unit, an asynchronous storage FIFO, an 8b10b coder and a clock multiplier unit, which handles data transmission up to 160 Mb/s for the IBL.

  5. Total Ionising Dose effects in the FE-I4 front-end chip of the ATLAS Pixel IBL detector

    CERN Document Server

    AUTHOR|(INSPIRE)INSPIRE-00439451

    2016-01-01

    The ATLAS Pixel Insertable B-Layer (IBL) detector was installed into the ATLAS experiment in 2014 and has been in operation since 2015. During the first year of data taking, an increase of the LV current, produced by the FE-I4 chip, was observed. This increase was traced back to radiation damage in the chip. The dependence of the current from the Total Ionizing Dose (TID) and temperature has been tested with X-ray irradiations. This report presents the measurement results and gives a parameterisation of the leakage current and detector operation guidelines.

  6. ATLAS ITk Pixel detector

    CERN Document Server

    Gemme, Claudia; The ATLAS collaboration

    2016-01-01

    The high luminosity upgrade of the LHC (HL-LHC) in 2026 will provide new challenge to the ATLAS tracker. The current inner detector will be replaced with a whole silicon tracker which will consist of a five barrel layer Pixel detector surrounded by a four barrel layer Strip detector. The expected high radiation level are requiring the development of upgraded silicon sensors as well as new a front-end chip. The dense tracking environment will require finer granularity detectors. The data rates will require new technologies for high bandwidth data transmission and handling. The current status of the HL-LHC ATLA Pixel detector developments as well as the various layout options will be reviewed.

  7. Pixel detector readout chip

    CERN Multimedia

    1991-01-01

    Close-up of a pixel detector readout chip. The photograph shows an aera of 1 mm x 2 mm containing 12 separate readout channels. The entire chip contains 1000 readout channels (around 80 000 transistors) covering a sensitive area of 8 mm x 5 mm. The chip has been mounted on a silicon detector to detect high energy particles.

  8. What's A Pixel Particle Sensor Chip?

    CERN Multimedia

    2008-01-01

    ATLAS particle physics experiment aided with collaboration ON Semiconductor was recently honored by the European Council for Nuclear Research (CERN), with an Industrial Award recognizing the company's contribution in supplying complex "Pixel Particle Sensor" chips for use in CERN's ATLAS particle physics experiment.

  9. Chip development in 65 nm CMOS technology for the high luminosity upgrade of the ATLAS pixel detector

    Energy Technology Data Exchange (ETDEWEB)

    Germic, Leonard; Hemperek, Tomasz; Kishishita, Tetsuichi; Krueger, Hans; Rymaszewski, Piotr; Wermes, Norbert [University of Bonn, Bonn (Germany)

    2016-07-01

    The LHC High Luminosity upgrade will result in a significant change of environment in which particle detectors are going to operate, especially for devices very close to the interaction point like pixel detector electronics. Challenges arising from the increased hit rate will have to be solved by designing faster and more complex readout electronics that will also have to withstand unprecedented radiation doses. Developing such integrated circuit requires a significant R and D effort and resources, therefore a joint development project between several institutes (including ours) was started. This collaboration, named RD53, aims to develop a pixel readout chip suitable for ATLAS' and CMS' upgrades using a 65nm CMOS technology. During this presentation motivations and benefits of using this very deep-submicron technology are discussed. Most of the talk is allocated to presenting some of the circuits designed by our group (focusing on developments connected to RD53 collaboration), along with their performance measurement results.

  10. ATLAS Pixel Opto-Electronics

    CERN Document Server

    Arms, K E; Gan, K K; Holder, M; Jackson, P; Johnson, M; Kagan, H; Kass, R; Rahimi, A M; Roggenbuck, A; Rush, C; Schade, P; Smith, S; Ter-Antonian, R; Ziolkowski, M; Zoeller, M M

    2005-01-01

    We have developed two radiation-hard ASICs for optical data transmission in the ATLAS pixel detector at the LHC at CERN: a driver chip for a Vertical Cavity Surface Emitting Laser (VCSEL) diode for 80 Mbit/s data transmission from the detector, and a Bi-Phase Mark decoder chip to recover the control data and 40 MHz clock received optically by a PIN diode. We have successfully implemented both ASICs in 0.25 micron CMOS technology using enclosed layout transistors and guard rings for increased radiation hardness. We present results of the performance of these chips, including irradiation with 24 GeV protons up to 61 Mrad (2.3 x 10e15 p/cm^2).

  11. Optical Link of the Atlas Pixel Detector

    CERN Document Server

    Gan, K.K.; Jackson, P.D.; Johnson, M.; Kagan, H.; Buchholz, P.; Holder, M.; Roggenbuck, A.; Schade, P.

    2007-01-01

    The on-detector optical link of the ATLAS pixel detector contains radiation-hard receiver chips to decode bi-phase marked signals received on PIN arrays and data transmitter chips to drive VCSEL arrays. The components are mounted on hybrid boards (opto-boards). We present results from the irradiation studies with 24 GeV protons up to 32 Mrad (1.2 x 10^15 p/cm^2) and the experience from the production.

  12. FE-I2 a front-end readout chip designed in a commercial 025- mu m process for the ATLAS pixel detector at LHC

    CERN Document Server

    Blanquart, L; Einsweiler, Kevin F; Fischer, P; Mandelli, E; Meddeler, G; Peric, I

    2004-01-01

    A new front-end chip (FE-I2) has been developed for the ATLAS pixel detector at the future Large Hadron Collider (LHC) accelerator facility of the European Laboratory for Particle Physics (CERN). This chip has been submitted in a commercial 0.25- mu m CMOS process using special layout techniques for radiation tolerance. It comprises 2880 pixels arranged into 18 columns of 160 channels. Each pixel element of dimension 50 mu m * 400 mu m is composed of a charge- sensitive amplifier followed by a fast discriminator with a detection threshold adjustable within a range of 0-6000 electrons and slow control logic incorporating a wired-hit-Or, preamplifier-kill, readout mask, and automatic threshold tuning circuitry. There are two single-event- upset (SEU)-tolerant DACs for reducing threshold (7-b) and recovery- time (3-b) mismatches from pixel to pixel along with digital hit emulation and a differential readout circuit aimed at transporting time-stamped data from each pixel to buffers at the bottom of the chip. In c...

  13. The ATLAS Pixel nSQP Readout Chain

    CERN Document Server

    Welch, S; The ATLAS collaboration

    2012-01-01

    The ATLAS Pixel New Service Quarter Panel (nSQP) project aims to deliver replacements for all on-detector services of the ATLAS Pixel Detector. The nSQPs will have replacements for the electro-optical converters. The replacement devices are LVDS transceiver boards (E-Boards) and they communicate with the existing ATLAS Pixel MCC chips over the original type 0 cables. In the other direction the E-Boards communicate over a 6.6 meter long transmission line with the VCSEL driver chips in the new electro-optical converters. These converters have been relocated to a region that is much more accessible.

  14. Pixel electronics for the ATLAS experiment

    CERN Document Server

    Fischer, P

    2001-01-01

    The ATLAS experiment at LHC will use 3 barrel layers and 2*5 disks of silicon pixel detectors as the innermost elements of the semiconductor tracker. The basic building blocks are pixel modules with an active area of 16.4 mm*60.8 mm which include an n/sup +/ on n-type silicon sensor and 16 VLSI front-end (FE) chips. Every FE chip contains a low power, high speed charge sensitive preamplifier, a fast discriminator, and a readout system which operates at the 40 MHz rate of LHC. The addresses of hit pixels (as well as a low resolution pulse height information) are stored on the FE chips until arrival of a level 1 trigger signal. Hits are then transferred to a module controller chip (MCC) which collects the data of all 16 FE chips, builds complete events and sends the data through two optical links to the data acquisition system. The MCC receives clock and data through an additional optical link and provides timing and configuration information for the FE chips. Two additional chips are used to amplify and decode...

  15. Test results of the first 3D-IC prototype chip developed in the framework of HL-LHC/ATLAS hybrid pixel upgrade

    CERN Document Server

    Pangaud, P; Barbero, M; Bompard, F; Breugnon, P; Clemens, J C; Fougeron, D; Garcia-Sciveres, M; Godiot, S; Hemperek, T; Krüger, H; Obermann, T; Rozanov, S; Wermes, N

    2014-01-01

    The ATLAS pixel detector needs to handle this new challenging environment. As a consequence, 3D integrated technologies are pursued with the target of offering higher spatial resolution, very good signal to noise ratio and unprecedented radiation hardness. We present here the test results of the first 3D prototype chip developed in the GlobalFoundries 130 nm technology processed by the Tezzaron Company, submitted within the 3D-IC consortium for which a qualification program was developed. Reliability and influence on the behavior of the integrated devices due to the presence of the Bond Interface (BI) and of the Through Silicon Via (TSV) connections, ...

  16. Upgrade of ATLAS ITk Pixel Detector

    CERN Document Server

    Huegging, Fabian; The ATLAS collaboration

    2017-01-01

    The high luminosity upgrade of the LHC (HL-LHC) in 2026 will provide new challenges to the ATLAS tracker. The current inner detector will be replaced with an entirely-silicon inner tracker (ITk) which will consist of a five barrel layer Pixel detector surrounded by a four barrel layer Strip detector. The expected high radiation levels are requiring the development of upgraded silicon sensors as well as new a front-end chip. The dense tracking environment will require finer granularity detectors and low mass global and local support structures. The data rates will require new technologies for high bandwidth data transmission and handling. The current status of the ITk ATLAS Pixel detector developments as well as different layout options will be reviewed.

  17. New results on diamond pixel sensors using ATLAS frontend electronics

    CERN Document Server

    Keil, Markus; Berdermann, E; Bergonzo, P; de Boer, Wim; Bogani, F; Borchi, E; Brambilla, A; Bruzzi, Mara; Colledani, C; Conway, J; D'Angelo, P; Dabrowski, W; Delpierre, P A; Dulinski, W

    2003-01-01

    Diamond is a promising sensor material for future collider experiments due to its radiation hardness. Diamond pixel sensors have been bump bonded to an ATLAS pixel readout chip using PbSn solder bumps. Single chip devices have been characterised by lab measurements and in a high-energy pion beam at CERN. Results on charge collection, spatial resolution, efficiency and the charge carrier lifetime are presented.

  18. Status and new layout of the ATLAS pixel detector

    CERN Document Server

    Netchaeva, P

    2002-01-01

    The ATLAS pixel detector is based on a set of radiation-hard electronics chips able to resist a dose of 500 kGy. The implementation of these chips in the DMILL technology did not give the expected results. Re-design of the radiation-hard chips in Deep SubMicron technology is ongoing, but has implied a one and a half year delay in an already tight schedule. Major layout changes have therefore been necessary to allow installation of the ATLAS pixel detector at LHC start-up. This paper illustrates the status of the ATLAS pixel project, die motivations for the new layout, the way this should be implemented and the prototype fabrication and testing. (4 refs).

  19. ATLAS Pixel Detector System Test

    CERN Document Server

    Triplett, N

    2007-01-01

    On June 25th of 2007 the ATLAS collaboration lowered the pixel detector into place, however before this the detector had to be qualified through a series of tests. Prior to assembly, each individual piece of the detector and services chain passed a set of quality controls. This was followed by the construction and test of the whole pixel detector. This test of the full chain of services -including the voltage supplies, opto-boards, cooling, temperature monitoring, control software, and the pixel modules themselves- is referred to as the Pixel System Test. The System Test took place in an above-ground laboratory setting at CERN and consisted of two main parts. The first half of the test focused on one of the pixel detector’s endcaps. This endcap consists of 144 modules, making up roughly 10% of the total pixel detector. For the pixel endcap test, most of the 144 modules were operated simultaneously which required that the pixel endcap’s cooling system be functioning as well[1]. Additionally, four scintilla...

  20. Serial powering for the upgrades of the ATLAS pixel detector

    Energy Technology Data Exchange (ETDEWEB)

    Barbero, Marlon; Gonella, Laura; Huegging, Fabian; Krueger, Hans; Wermes, Norbert [Physikalisches Institut, Univ. Bonn, Nussallee 12, 53115 Bonn (Germany)

    2012-07-01

    A serial powering scheme is proposed for the upgrades of the ATLAS pixel detector at the High Luminosity (HL-)LHC, to provide an efficient and low material power distribution. The main regulation element is the Shunt-LDO regulator, a new regulator concept designed to meet the requirements of serially powered detector systems. The Shunt-LDO working principle was successfully demonstrated with two prototypes, and two Shunt-LDO regulators are integrated in the new ATLAS pixel FE (Front-End) chip, the FE-I4. Results of the characterization of the regulators in FE-I4 are shown, and the chip performance is compared for different powering options, with and without regulators. At the same time a serial powering demonstrator is being developed. This will include a chain of four 2-chips pixel modules, AC-coupled data transmission, dedicated HV distribution scheme, and possibly a stave protection chip. Results on the stave demonstrator are presented as well.

  1. Readout of TPC Tracking Chambers with GEMs and Pixel Chip

    Energy Technology Data Exchange (ETDEWEB)

    Kadyk, John; Kim, T.; Freytsis, M.; Button-Shafer, J.; Kadyk, J.; Vahsen, S.E.; Wenzel, W.A.

    2007-12-21

    Two layers of GEMs and the ATLAS Pixel Chip, FEI3, have been combined and tested as a prototype for Time Projection Chamber (TPC) readout at the International Linear Collider (ILC). The double-layer GEM system amplifies charge with gain sufficient to detect all track ionization. The suitability of three gas mixtures for this application was investigated, and gain measurements are presented. A large sample of cosmic ray tracks was reconstructed in 3D by using the simultaneous timing and 2D spatial information from the pixel chip. The chip provides pixel charge measurement as well as timing. These results demonstrate that a double GEM and pixel combination, with a suitably modified pixel ASIC, could meet the stringent readout requirements of the ILC.

  2. Chip development in 65 nm CMOS technology for the high luminosity upgrade of the ATLAS pixel detector

    Energy Technology Data Exchange (ETDEWEB)

    Germic, Leonard; Hemperek, Tomasz; Kishishita, Testsuichi; Krueger, Hans; Rymaszewski, Piotr; Wermes, Norbert [University of Bonn, Bonn (Germany); Havranek, Miroslav [University of Bonn, Bonn (Germany); Institute of Physics of the Academy of Sciences, Prague (Czech Republic)

    2015-07-01

    The LHC High Luminosity upgrade will result in a significant change of environment in which particle detectors are going to operate, especially for devices very close to the interaction point like pixel detector electronics. Challenges coming from the higher hit rate will have to be solved by designing faster and more complex circuits, while at the same time keeping in mind very high radiation hardness requirements. Therefore matching the specification set by the high luminosity upgrade requires a large R and D effort. Our group is participating in such a joint development * namely the RD53 collaboration * which goal is to design a new pixel chip using an advanced 65 nm CMOS technology. During this presentation motivations and benefits of using this very deep-submicron technology will be shown together with a comparison with older technologies (130 nm, 250 nm). Most of the talk is allocated to presenting some of the circuits designed by our group, along with their performance measurement results.

  3. The ATLAS Silicon Pixel Sensors

    CERN Document Server

    Alam, M S; Einsweiler, K F; Emes, J; Gilchriese, M G D; Joshi, A; Kleinfelder, S A; Marchesini, R; McCormack, F; Milgrome, O; Palaio, N; Pengg, F; Richardson, J; Zizka, G; Ackers, M; Andreazza, A; Comes, G; Fischer, P; Keil, M; Klasen, V; Kühl, T; Meuser, S; Ockenfels, W; Raith, B; Treis, J; Wermes, N; Gössling, C; Hügging, F G; Wüstenfeld, J; Wunstorf, R; Barberis, D; Beccherle, R; Darbo, G; Gagliardi, G; Gemme, C; Morettini, P; Musico, P; Osculati, B; Parodi, F; Rossi, L; Blanquart, L; Breugnon, P; Calvet, D; Clemens, J-C; Delpierre, P A; Hallewell, G D; Laugier, D; Mouthuy, T; Rozanov, A; Valin, I; Aleppo, M; Caccia, M; Ragusa, F; Troncon, C; Lutz, Gerhard; Richter, R H; Rohe, T; Brandl, A; Gorfine, G; Hoeferkamp, M; Seidel, SC; Boyd, GR; Skubic, P L; Sícho, P; Tomasek, L; Vrba, V; Holder, M; Ziolkowski, M; D'Auria, S; del Papa, C; Charles, E; Fasching, D; Becks, K H; Lenzen, G; Linder, C

    2001-01-01

    Prototype sensors for the ATLAS silicon pixel detector have been developed. The design of the sensors is guided by the need to operate them in the severe LHC radiation environment at up to several hundred volts while maintaining a good signal-to-noise ratio, small cell size, and minimal multiple scattering. The ability to be operated under full bias for electrical characterization prior to the attachment of the readout integrated circuit electronics is also desired.

  4. Status of the ATLAS pixel detector

    CERN Document Server

    Saavedra Aldo, F

    2005-01-01

    The ATLAS pixel detector is currently being constructed and will be installed in 2006 to be ready for commissioning at the Large Hadron Collider. The complete pixel detector is composed of three concentric barrels and six disks that are populated by 1744 ATLAS Pixel modules. The main components of the pixel module are the readout electronics and the silicon sensor whose active region is instrumented with rectangular pixels. The module has been designed to be able to survive 10 years of operation within the ATLAS detector. A brief description of the pixel detector will be presented with results and problems encountered during the production stage.

  5. Operational Experience with the ATLAS Pixel Detector

    CERN Document Server

    Djama, Fares; The ATLAS collaboration

    2017-01-01

    Run 2 of the LHC collider sets new challenges to track and vertex reconstruction because of its higher energy, pileup and luminosity. The ATLAS tracking performance relies critically on the Pixel Detector. Therefore, in view of Run 2, the ATLAS collaboration has constructed the first 4-layer pixel detector in Particle Physics by installing a new pixel layer, called Insertable B-Layer (IBL). Operational experience and performance of the 4-layer Pixel Detector during Run 2 are presented.

  6. Initial Measurements on Pixel Detector Modules for the ATLAS Upgrades

    CERN Document Server

    Gallrapp, C; The ATLAS collaboration

    2011-01-01

    Delicate conditions in terms of peak and integrated luminosity in the Large Hadron Collider (LHC) will raise the ATLAS Pixel Detector to its performance limits. Silicon planar, silicon 3D and diamond pixel sensors are three possible sensor technologies which could be implemented in the upcoming Pixel Detector upgrades of the ATLAS experiment. Measurements of the IV-behavior and measurements with radioactive Americium-241 and Strontium-90 are used to characterize the sensor properties and to understand the interaction between the ATLAS FE-I4 front-end chip and the sensor. Comparisons of results from before and after irradiation for silicon planar and 3D pixel sensors, which give a first impression on the charge collection properties of the different sensor technologies, are presented.

  7. Digital Power Consumption Estimations for CHIPIX65 Pixel Readout Chip

    CERN Document Server

    Marcotulli, Andrea

    2016-01-01

    New hybrid pixel detectors with improved resolution capable of dealing with hit rates up to 3 GHz/cm2 will be required for future High Energy Physics experiments in the Large Hadron Collider (LHC) at CERN. Given this, the RD53 collaboration works on the design of the next generation pixel readout chip needed for both the ATLAS and CMS detector phase 2 pixel upgrades. For the RD53 demonstrator chip in 65nm CMOS technology, different architectures are considered. In particular the purpose of this work is estimating the power consumption of the digital architecture of the readout ASIC developed by CHIPIX65 project of the INFN National Scientific Committee. This has been done with modern chip design tools integrated with the VEPIX53 simulation framework that has been developed within the RD53 collaboration in order to assess the performance of the system in very high rate, high energy physics experiments.

  8. Initial Measurements On Pixel Detector Modules For The ATLAS Upgrades

    CERN Document Server

    Gallrapp, C; The ATLAS collaboration

    2011-01-01

    Sophisticated conditions in terms of peak and integrated luminosity in the Large Hadron Collider (LHC) will raise the ATLAS Pixel detector to its performance limits. Silicon planar, silicon 3D and diamond pixel sensors are three possible sensor technologies which could be implemented in the upcoming pixel detector upgrades of the ATLAS experiment. Measurements of the IV-behavior and measurements with radioactive Americium-241 and Strontium-90 are used to characterize the sensor properties and to understand the interaction between the ATLAS FE-I4 front-end chip and the sensor. Comparisons of results from before and after irradiation, which give a first impression on the charge collection properties of the different sensor technologies are presented.

  9. ATLAS pixel detector electronics and sensors

    Energy Technology Data Exchange (ETDEWEB)

    Aad, G; Bernardet, K [CPPM, Aix-Marseille Universite, CNRS/IN2P3, Marseille (France); Ackers, M; Barbero, M B [Physikalisches Institut der Universitaet Bonn, Nussallee 12, D - 53115 Bonn (Germany); Alberti, F A; Aleppo, M; Alimonti, G; Andreani, A; Andreazza, A [INFN Milano, via Celoria 16, IT - 20133 Milano (Italy); Alonso, J; Anderssen, E C; Arguin, J-F; Beringer, J [Lawrence Berkeley National Laboratory and University of California, Physics Division MS50B-6227, 1 Cyclotron Road, Berkeley, CA 94720, United States of America (United States); Arms, K E [Ohio State University, 191 West Woodruff Ave, Columbus, OH 43210-1117, United States of America (United States); Barberis, D; Beccherle, R B [INFN Genova, via Dodecaneso 33, IT - 16146 Genova (Italy); Bazalova, M [Institute of Physics, Academy of Sciences of the Czech Republic Na Slovance 2, CZ - 18221 Praha 8 (Czech Republic); Becks, K H; Bellina, F [Bergische Universitaet, Fachbereich C, Physik Postfach 100127, Gauss-Strasse 20, D- 42097 Wuppertal (Germany); Behera, P K [203 VAN ALLEN HALL, IOWA CITY IA 52242-1479, United States of America (United States)], E-mail: MGGilchriese@lbl.gov (and others)

    2008-07-15

    The silicon pixel tracking system for the ATLAS experiment at the Large Hadron Collider is described and the performance requirements are summarized. Detailed descriptions of the pixel detector electronics and the silicon sensors are given. The design, fabrication, assembly and performance of the pixel detector modules are presented. Data obtained from test beams as well as studies using cosmic rays are also discussed.

  10. A via last TSV process applied to ATLAS pixel detector modules: proof of principle demonstration

    CERN Document Server

    Barbero, M; Gonella, L; Hügging, F; Krüger, H; Rothermund, M; Wermes, N

    2012-01-01

    Via last Through Silicon Vias (TSVs) can be exploited to build low material modules for the upgrades of the ATLAS pixel detector at the High Luminosity LHC. To prove this concept a via last TSV process is demonstrated on ATLAS pixel readout wafers. Demonstrator modules featuring 90 mm thin readout chips with TSVs are operated using the connection from the back side of the chip. This paper illustrates the via formation process and the results from the characterization of modules with TSVs.

  11. Overview of the ATLAS Insertable B-Layer Pixel Detector

    CERN Document Server

    Pernegger, H; The ATLAS collaboration

    2011-01-01

    ATLAS currently develops a new pixel detector for the first upgrade of its tracking system: The ATLAS Insertable B-Layer Pixel detector (IBL). The new layer will be inserted between the inner most layer of the current pixel detector and a new beam pipe. The sensors are placed at a radius of 3.4cm. The expected high radiation levels and high hit occupancy require new developments for front-end chip and the sensor which can stand radiation levels beyond 5E15 neq/cm2. ATLAS has developed the new FEI4 and new silicon sensors to be used as pixel modules. Furthermore a new lightweight support and cooling structure was developed, which minimizes the overall radiation and allows detector cooling with CO2 at -40C coolant temperature. Currently the overall integration and installation procedure is being developed and test ready for installation in ATLAS in 2013. The presentation summarizes the current state of development of IBL modules, first preliminary test results of the new chip with new sensors, the construction ...

  12. Commissioning of the ATLAS pixel detector

    Energy Technology Data Exchange (ETDEWEB)

    ATLAS Collaboration; Golling, Tobias

    2008-09-01

    The ATLAS pixel detector is a high precision silicon tracking device located closest to the LHC interaction point. It belongs to the first generation of its kind in a hadron collider experiment. It will provide crucial pattern recognition information and will largely determine the ability of ATLAS to precisely track particle trajectories and find secondary vertices. It was the last detector to be installed in ATLAS in June 2007, has been fully connected and tested in-situ during spring and summer 2008, and is ready for the imminent LHC turn-on. The highlights of the past and future commissioning activities of the ATLAS pixel system are presented.

  13. Characterisation of the ATLAS ITK strips front-end chip and development of EUDAQ 2.0 for the EUDET-style pixel telescopes

    Energy Technology Data Exchange (ETDEWEB)

    Peschke, Richard

    2017-03-15

    As part of the ATLAS phase-II upgrade a new, all-silicon tracker will be built. The new tracker will consist of silicon pixel sensors and silicon microstrip sensors. For the readout of the microstrip sensor a new readout chip was designed; the so called ATLAS Binary Converter 130 (ABC130) which is based on a 130 nm CMOS technology. The chip consists of an analog Front End built up of 256 channels, each with a preamplifier and a discriminator for converting the analog sensor readout into a binary response. The preamplifier of the ABC130 was designed to have a gain of 90-95 (mV)/(fC). First laboratory measurements with the built-in control circuits have shown a gain of <75 (mV)/(fC). In the course of this thesis a test beam campaign was undertaken to measure the gain in an unbiased system under realistic conditions. The obtained gain varied from ∼90 (mV)/(fC) to ∼100 (mV)/(fC). With this, the values obtained by the test beam campaign are within the specifications. In order to perform the test beam campaign with optimal efficiency, a complete overhaul of the data acquisition framework used for the EUDET type test beam telescopes was necessary. The new version is called EUDAQ 2.0. It is designed to accommodate devices with different integration times such as LHC-type devices with an integration time of only 25 ns, and devices with long integration times such as the MIMOSA26 with an integration time of 114.5 μs. To accomplish this a new synchronization algorithm has been developed. It gives the user full flexibility on the means of synchronizing their own data stream with the system. Beyond this, EUDAQ 2.0 also allows user specific encoding and decoding of data packets. This enables the user to minimize the data overhead and to shift more computation time to the offline stage. To reduce the network overhead EUDAQ 2.0 allows the user to store data locally. The merging is then postponed to the offline stage.

  14. Planar Pixel Sensors for the ATLAS Upgrade: Beam Tests results

    CERN Document Server

    Weingarten, J

    2012-01-01

    The performance of planar silicon pixel sensors, in development for the ATLAS Insertable B-Layer and High Luminosity LHC (HL-LHC) upgrades, has been examined in a series of beam tests at the CERN SPS facilities since 2009. Salient results are reported on the key parameters, including the spatial resolution, the charge collection and the charge sharing between adjacent cells, for different bulk materials and sensor geometries. Measurements are presented for n+-in-n pixel sensors irradiated with a range of fluences and for p-type silicon sensors with various layouts from different vendors. All tested sensors were connected via bump-bonding to the ATLAS Pixel read-out chip. The tests reveal that both n-type and p-type planar sensors are able to collect significant charge even after the lifetime fluence expected at the HL-LHC.

  15. The Phase-2 ATLAS ITk Pixel Upgrade

    CERN Document Server

    Rossi, Leonardo Paolo; The ATLAS collaboration

    2018-01-01

    The upgrade of the ATLAS experiment for the operation at the High Luminosity Large Hadron Collider requires a new and more performant inner tracker, the ITk. The innermost part of this tracker will be built using silicon pixel detectors. This paper describes the ITk pixel project, which, after few years of design and test e ort, is now defined in detail.

  16. Total Ionization Dose effects in the FE-I4 front-end chip of the ATLAS Pixel IBL detector

    CERN Document Server

    ATLAS Pixel Collaboration; The ATLAS collaboration

    2016-01-01

    During the first year of operation, a drift of the IBL calibration parameters (Threshold and ToT) and a low voltage current increase was observed. It was assumed that both observations were related to radiation damage effects depending on the Total Ionizing Dose (TID) in the NMOS transistors of which each Front End chip holds around 80 million. The effect of radiation on those transistors was investigated in lab measurements and the results will be presented in this talk.

  17. The ATLAS tracker Pixel detector for HL-LHC

    CERN Document Server

    AUTHOR|(INSPIRE)INSPIRE-00214676; The ATLAS collaboration

    2017-01-01

    The high luminosity upgrade of the LHC (HL-LHC) in 2026 will provide new challenges to the ATLAS tracker. The current Inner Detector will be replaced with an all-silicon tracker which will consist of a five barrel layer Pixel detector surrounded by a four barrel layer Strip detector. The expected dense tracking environment and high radiation levels require the development of higher granularity radiation hard silicon sensors and a new front-end readout chip. The data rates require new technologies for high bandwidth data transmission and handling. The current status of the HL-LHC ATLAS Pixel detector developments as well as the various layout options are presented in this paper.

  18. Module and Electronics Developments for the ATLAS ITK Pixel System

    CERN Document Server

    Nellist, Clara; The ATLAS collaboration

    2016-01-01

    ATLAS is preparing for an extensive modification of its detector in the course of the planned HL-LHC accelerator upgrade around 2025 which includes a replacement of the entire tracking system by an all-silicon detector (Inner Tracker, ITk). The five innermost layers of ITk will comprise of a pixel detector built of new sensor and readout electronics technologies to improve the tracking performance and cope with the severe HL-LHC environment in terms of occupancy and radiation. The total area of the new pixel system could measure up to 14 m$^{2}$, depending on the final layout choice that is expected to take place in early 2017. An intense R\\&D activity is taking place in the field of planar, 3D, CMOS sensors to identify the optimal technology for the different pixel layers. In parallel various sensor-chip interconnection options are explored to identify reliable technologies when employing 100-150~$\\mu$m thin chips. While the new read-out chip is being developed by the RD53 Collaboration, the pixel off de...

  19. Module and Electronics Developments for the ATLAS ITK Pixel System

    CERN Document Server

    Rummler, Andr{e}; The ATLAS collaboration

    2016-01-01

    The entire tracking system of the ATLAS experiment will be replaced during the LHC Phase II shutdown around 2025 by an all-silicon detector (Inner Tracker, ITk). The pixel detector will be composed by the five innermost layers, instrumented with new sensor and readout electronics technologies to improve the tracking performance and cope with the severe HL-LHC environment in terms of occupancy and radiation. The total area of the new pixel system could measure up to 14 m^2, depending on the final layout choice that is expected to take place in early 2017. Different designs of planar, 3D, CMOS sensors are being investigated to identify the optimal technology for the different pixel layers. In parallel sensor-chip interconnection options are evaluated in collaboration with industrial partners to identify reliable technologies when employing 100-150 μm thin chips. While the new read-out chip is being developed by the RD53 Collaboration, the pixel off detector read-out electronics will be implemented in the frame...

  20. Commissioning Perspectives for the ATLAS Pixel Detector

    CERN Document Server

    AUTHOR|(CDS)2067982; Klingenberg, Reiner

    2007-01-01

    The ATLAS Pixel Detector, the innermost sub-detector of the ATLAS experiment at the Large Hadron Collider, CERN, is an 80 million channel silicon pixel tracking detector designed for high-precision charged particle tracking and secondary vertex reconstruction. It was installed in the ATLAS experiment and commissioning for the first proton-proton collision data taking in 2008 has begun. Due to the complex layout and limited accessibility, quality assurance measurements were continuously performed during production and assembly to ensure that no problematic components are integrated. The assembly of the detector at CERN and related quality assurance measurement results, including comparison to previous production measurements, will be presented. In order to verify that the integrated detector, its data acquisition readout chain, the ancillary services and cooling system as well as the detector control and data acquisition software perform together as expected approximately 8% of the detector system was progress...

  1. Module and electronics developments for the ATLAS ITK pixel system

    CERN Document Server

    Munoz Sanchez, Francisca Javiela; The ATLAS collaboration

    2017-01-01

    ATLAS is preparing for an extensive modification of its detector in the course of the planned HL-LHC accelerator upgrade around 2025 which includes a replacement of the entire tracking system by an all-silicon detector (Inner Tracker, ITk). The five innermost layers of ITk will comprise of a pixel detector built of new sensor and readout electronics technologies to improve the tracking performance and cope with the severe HL-LHC environment in terms of occupancy and radiation. The total area of the new pixel system could measure up to 14 m2, depending on the final layout choice that is expected to take place in 2017. A new on-detector readout chip is designed in the context of the RD53 collaboration in 65 nm CMOS technology. This paper will present the on-going R&D within the ATLAS ITK project towards the new pixel modules and the off-detector electronics. Planar and 3D sensors are being re-designed with cell sizes of 50x50 or 25x100 μm2, compatible with the RD53 chip. A sensor thickness equal or less th...

  2. ATLAS Tracker and Pixel Operational Experience

    CERN Document Server

    AUTHOR|(INSPIRE)INSPIRE-00222525; The ATLAS collaboration

    2016-01-01

    The tracking performance of the ATLAS detector relies critically on the silicon and gaseous tracking subsystems that form the ATLAS Inner Detector. Those subsystems have undergone significant hardware and software upgrades to meet the challenges imposed by the higher collision energy, pile-up and luminosity that are being delivered by the LHC during Run2. The key status and performance metrics of the Pixel Detector and the Semi Conductor Tracker, are summarised, and the operational experience and requirements to ensure optimum data quality and data taking efficiency are described.

  3. Upgrades of the ATLAS Pixel Detector

    CERN Document Server

    Hügging, F; The ATLAS collaboration

    2013-01-01

    The upgrade for the ATLAS detector will undergo different phases towards HL-LHC. The first upgrade for the Pixel Detector (Phase 1) consists in the construction of a new pixel layer, which will be installed during the 1st long shutdown of the LHC machine (LS1) in 2013/14. The new detector, called Insertable B-Layer (IBL), will be inserted between the existing pixel detector and a new (smaller radius) beam-pipe at a radius of about 3.2 cm. The IBL requires the development of several new technologies to cope with the increase of radiation and pixel occupancy as well as to improve the physics performance of the existing pixel detector. The pixel size is reduced and the material budget is minimized by using new lightweight mechanical support materials and a CO2 based cooling system. For Phase 2 upgrade of LHC a complete new 4-layer pixel system is planned as part of a new all silicon Inner Detector. The increase in luminosity to about $5\\cdot 10^{34}$cm$^{-2}$s$^{-1}$ together with a total expected lifetime of ab...

  4. ATLAS ITk and new pixel sensors technologies

    CERN Document Server

    Gaudiello, A

    2016-01-01

    During the 2023–2024 shutdown, the Large Hadron Collider (LHC) will be upgraded to reach an instantaneous luminosity up to 7×10$^{34}$ cm$^{−2}$s$^{−1}$. This upgrade of the accelerator is called High-Luminosity LHC (HL-LHC). The ATLAS detector will be changed to meet the challenges of HL-LHC: an average of 200 pile-up events in every bunch crossing, and an integrated luminosity of 3000 fb $^{−1}$ over ten years. The HL-LHC luminosity conditions are too extreme for the current silicon (pixel and strip) detectors and straw tube transition radiation tracker (TRT) of the current ATLAS tracking system. Therefore the ATLAS inner tracker is being completely rebuilt for data-taking and the new system is called Inner Tracker (ITk). During this upgrade the TRT will be removed in favor of an all-new all-silicon tracker composed only by strip and pixel detectors. An overview of new layouts in study will be reported and the new pixel sensor technologies in development will be explained.

  5. ATLAS rewards two pixel detector suppliers

    CERN Multimedia

    2007-01-01

    Peter Jenni, ATLAS spokesperson, presented the ATLAS supplier award to Herbert Reichl, IZM director, and to Simonetta Di Gioia, from the SELEX company.Two of ATLAS’ suppliers were awarded prizes at a ceremony on Wednesday 13 June attended by representatives of the experiment’s management and of CERN. The prizes went to the Fraunhofer Institut für Zuverlässigkeit und Mikrointegration (IZM) in Berlin and the company SELEX Sistemi Integrati in Rome for the manufacture of modules for the ATLAS pixel detector. SELEX supplied 1500 of the modules for the tracker, while IZM produced a further 1300. The modules, each made up of 46080 channels, form the active part of the ATLAS pixel detector. IZM and SELEX received the awards for the excellent quality of their work: the average number of faulty channels per module was less than 2.10-3. They also stayed within budget and on schedule. The difficulty they faced was designing modules based on electronic components and sensor...

  6. Readout Architecture for Hybrid Pixel Readout Chips

    CERN Document Server

    AUTHOR|(SzGeCERN)694170; Westerlund, Tomi; Wyllie, Ken

    The original contribution of this thesis to knowledge are novel digital readout architectures for hybrid pixel readout chips. The thesis presents asynchronous bus-based architecture, a data-node based column architecture and a network-based pixel matrix architecture for data transportation. It is shown that the data-node architecture achieves readout efficiency 99 % with half the output rate as a bus-based system. The network-based solution avoids ``broken'' columns due to some manufacturing errors, and it distributes internal data traffic more evenly across the pixel matrix than column-based architectures. An improvement of $>$ 10 % to the efficiency is achieved with uniform and non-uniform hit occupancies. Architectural design has been done using transaction level modeling ($TLM$) and sequential high-level design techniques for reducing the design and simulation time. It has been possible to simulate tens of column and full chip architectures using the high-level techniques. A decrease of $>$ 10 in run-time...

  7. Module and electronics developments for the ATLAS ITK pixel system

    CERN Document Server

    Nellist, Clara; The ATLAS collaboration

    2016-01-01

    Summary ATLAS is preparing for an extensive modification of its detector in the course of the planned HL‐ LHC accelerator upgrade around 2025 which includes a replacement of the entire tracking system by an all‐silicon detector (Inner Tracker, ITk). A revised trigger and data taking system is foreseen with triggers expected at lowest level at an average rate of 1 MHz. The five innermost layers of ITk will comprise of a pixel detector built of new sensor and readout electronics technologies to improve the tracking performance and cope with the severe HL‐LHC environment in terms of occupancy and radiation. The total area of the new pixel system could measure up to 14 m2, depending on the final layout choice that is expected to take place in early 2017. A new on‐detector readout chip is designed in the context of the RD53 collaboration in 65 nm CMOS technology. This paper will present the on‐going R&D within the ATLAS ITK project towards the new pixel modules and the off‐detector electronics. Pla...

  8. Studies for the detector control system of the ATLAS pixel at the HL-LHC

    CERN Document Server

    Püllen, L; Boek, J; Kersten, S; Kind, P; Mättig, P; Zeitnitz, C

    2012-01-01

    experiment will be replaced completely. As part of this redesign there will also be a new pixel detector. This new pixel detector requires a control system which meets the strict space requirements for electronics in the ATLAS experiment. To accomplish this goal we propose a DCS (Detector Control System) network with the smallest form factor currently available. This network consists of a DCS chip located in close proximity to the interaction point and a DCS controller located in the outer regions of the ATLAS detector. These two types of chips form a star shaped network with several DCS chips being controlled by one DCS controller. Both chips are manufactured in deep sub-micron technology. We present prototypes with emphasis on studies concerning single event upsets.

  9. Status of the ATLAS Pixel Detector and its performance after three years of operation

    CERN Document Server

    Favareto, A; The ATLAS collaboration

    2012-01-01

    The ATLAS Pixel Detector is the innermost detector of the ATLAS experiment at the Large Hadron Collider at CERN, providing high-resolution measurements of charged particle tracks in the high radiation environment close to the collision region. This capability is very important for the identification and measurement of proper decay times of long-lived particles such as b-hadrons, and thus vital for the ATLAS physics program. The detector provides hermetic coverage with three cylindrical layers and three layers of forward and backward pixel detectors. It consists of approximately 80 million pixels that are individually read out via chips bump-bonded to 1744 n-in-n silicon substrates. The detector performance is excellent: ~96 % of the pixels are operational, noise occupancy and hit efficiency exceed the design specification, and a good alignment allows high quality track resolution

  10. Radiation-Hard Opto-Link for the Atlas Pixel Detector

    CERN Document Server

    INSPIRE-00083439; Arms, Kregg E.; Johnson, M.; Kagan, H.; Kass, R.; Rush, C.; Smith, S.; Ter-Antonian, R.; Zoeller, M.M.; Buchholz, P.; Holder, M.; Roggenbuck, A.; Schade, P.; Ziolkowski, M.

    2004-01-01

    The on-detector optical link of the ATLAS pixel detector contains radiation-hard receiver chips to decode bi-phase marked signals received on PIN arrays and data transmitter chips to drive VCSEL arrays. The components are mounted on hybrid boards (opto-boards). We present results from the opto-boards and from irradiation studies with 24 GeV protons up to 33 Mrad (1.2 x 10^15 p/cm^2).

  11. The Phase-II ATLAS ITk pixel upgrade

    Science.gov (United States)

    Terzo, S.

    2017-07-01

    The entire tracking system of the ATLAS experiment will be replaced during the LHC Phase-II shutdown (foreseen to take place around 2025) by an all-silicon detector called the ``ITk'' (Inner Tracker). The innermost portion of ITk will consist of a pixel detector with five layers in the barrel region and ring-shaped supports in the end-cap regions. It will be instrumented with new sensor and readout electronics technologies to improve the tracking performance and cope with the HL-LHC environment, which will be severe in terms of occupancy and radiation levels. The new pixel system could include up to 14 m2 of silicon, depending on the final layout, which is expected to be decided in 2017. Several layout options are being investigated at the moment, including some with novel inclined support structures in the barrel end-cap overlap region and others with very long innermost barrel layers. Forward coverage could be as high as |eta| chip. The pixel off-detector readout electronics will be implemented in the framework of the general ATLAS trigger and DAQ system. A readout speed of up to 5 Gb/s per data link will be needed in the innermost layers going down to 640 Mb/s for the outermost. Because of the very high radiation level inside the detector, the first part of the transmission has to be implemented electrically, with signals converted for optical transmission at larger radii. Extensive tests are being carried out to prove the feasibility of implementing serial powering, which has been chosen as the baseline for the ITk pixel system due to the reduced material in the servicing cables foreseen for this option.

  12. Bier and Pastis, a pixel readout prototype chip for LHC

    CERN Document Server

    Berg, C; Bonzom, V; Delpierre, P A; Desch, Klaus; Fischer, P; Keil, M; Meuser, S; Raith, B A; Wermes, N

    2000-01-01

    The 12*63 pixel readout prototype chip Bieu&Pastis, designed to cope with the environment imposed on a pixel detector by high-energy proton-proton collisions as expected at the Large Hadron Collider (LHC), is described. The chip contains the full pixel cell functionality, but not yet the full peripheral architecture for data transfer and readout with LHC speed. Design considerations and lab tests to characterize the performance as well as some test beam results are described. (7 refs).

  13. Application of a new interconnection technology for the ATLAS pixel upgrade at SLHC

    CERN Document Server

    Macchiolo, A; Beimforde, M; Moser, H G; Nisius, R; Richter, R H

    2009-01-01

    We present an R&D activity aiming towards a new detector concept in the framework of the ATLAS pixel detector upgrade exploiting a vertical integration technology developed at the Fraunhofer Institute IZMMunich. The Solid-Liquid InterDiffusion (SLID) technique is investigated as an alternative to the bump-bonding process. We also investigate the extraction of the signals from the back of the read-out chip through Inter-Chip-Vias to achieve a higher fraction of active area with respect to the present ATLAS pixel module. We will present the layout and the first results obtained with a production of test-structures designed to investigate the SLID interconnection efficiency as a function of different parameters, i.e. the pixel size and pitch, as well as the planarity of the underlying layers.

  14. Characterization of new hybrid pixel module concepts for the ATLAS Insertable B-Layer upgrade

    CERN Document Server

    Backhaus, M; The ATLAS collaboration

    2011-01-01

    For the ATLAS pixel detector, a fourth hybrid pixel detector layer known as Insertable B-Layer (IBL) is developed, which will be slid into the present pixel detector. Due to the very small distance to the interaction point of about 3.4 cm, the IBL will improve the track reconstruction and vertexing of the pixel detector. In order to handle the extreme particle flux and radiation damage close to the interaction point, new sensor concepts as well as a new readout chip, FE-I4, are currently developed. To reduce the pixel occupancy, the pixel size in FE-I4 is reduced from the 50 x 400 µm² of the readout chip of the current ATLAS pixel detector (FE-I3) to 50 x 250 µm². The FE-I4 active area will cover ~ 2 x 1.7 cm², resulting in 26.880, a nearly ten fold increase in pixel number with respect to FE-I3. This translates into an increased active over inactive area ratio of less than 75% in FE-I3 to 90% in FE-I4. This enables a better, more integrated module concept, with a smaller amount of periphery to achieve a...

  15. Characterisation of new hybrid pixel module concepts for the ATLAS Insertable B-Layer upgrade

    CERN Document Server

    Backhaus, M; The ATLAS collaboration

    2011-01-01

    For the ATLAS pixel detector, a fourth hybrid pixel detector layer known as Insertable B-Layer (IBL) is developed, which will be slid into the present pixel detector. Due to the very small distance to the interaction point of about 3.4 cm, the IBL will improve the track reconstruction and vertexing of the pixel detector. In order to handle the extreme particle flux and radiation damage close to the interaction point, new sensor concepts as well as a new readout chip, FE-I4, are currently developed. To reduce the pixel occupancy, the pixel size in FE-I4 is reduced from the 50 x 400 µm² of the readout chip of the current ATLAS pixel detector (FE-I3) to 50 x 250 µm². The FE-I4 active area will cover ~ 2 x 1.7 cm², resulting in 26.880, a nearly ten fold increase in pixel number with respect to FE-I3. This translates into an increased active over inactive area ratio of less than 75% in FE-I3 to 90% in FE-I4. This enables a better, more integrated module concept, with a smaller amount of periphery to achieve a...

  16. Experience in fabrication of multichip-modules for the ATLAS pixel detector

    Science.gov (United States)

    Fritzsch, T.; Jordan, R.; Töpper, M.; Röder, J.; Kuna, I.; Lutz, M.; Defo Kamga, F.; Wolf, J.; Ehrmann, O.; Oppermann, H.; Reichl, H.

    2006-09-01

    About 1100 ATLAS bare modules will be assembled at Fraunhofer IZM. The bumping and assembly technology of these multichip-modules is described in this paper. Pixel contacts and lead-tin interconnection bumps are deposited by electroplating. A high yield manufacturing technology requires electrical test and optical inspection on wafer level as well as on chip level. In this paper, the result of optical inspection of more than 7600 readout chips is presented. Handling mistakes are the main reason for rejection of chips before flip chip assembly. A reliable process technology, the assembly of electrical Known Good Die (KGD), optical inspection after bumping and the development of a single chip repair technology result in 98% of good modules after flip chip assembly. The reliability of the bump interconnections was even checked by thermal cycling and accelerated thermal aging.

  17. The Phase II ATLAS ITk Pixel Upgrade

    CERN Document Server

    Terzo, Stefano; The ATLAS collaboration

    2017-01-01

    The entire tracking system of the ATLAS experiment will be replaced during the LHC Phase II shutdown (foreseen to take place around 2025) by an all-silicon detector called the "ITk" (Inner Tracker). The innermost portion of ITk will consist of a pixel detector with five layers in the barrel region and and ring-shaped supports in the endcap regions. It will be instrumented with new sensor and readout electronics technologies to improve the tracking performance and cope with the HL-LHC environment, which will be severe in terms of occupancy and radiation. The total surface area of silicon in the new pixel system could measure up to 14 m$^2$ , depending on the final layout choice, which is expected to take place in early 2017. Several layout options are being investigated at the moment, including some with novel inclined support structures in the barrel-endcap overlap region and others with very long innermost barrel layers. Forward coverage could be as high as $|\\eta| < 4$. Supporting structures will be ...

  18. The Phase-2 ATLAS ITk Pixel Upgrade

    CERN Document Server

    Flick, Tobias; The ATLAS collaboration

    2016-01-01

    The entire tracking system of the ATLAS experiment will be replaced during the LHC Phase II shutdown (foreseen to take place around 2025) by an all-silicon detector called the “ITk” (Inner Tracker). The pixel detector will comprise the five innermost layers, and will be instrumented with new sensor and readout electronics technologies to improve the tracking performance and cope with the HL-LHC environment, which will be severe in terms of occupancy and radiation. The total surface area of silicon in the new pixel system could measure up to 14 m2, depending on the final layout choice, which is expected to take place in early 2017. Four layout options are being investigated at the moment, two with forward coverage to |eta| < 3.2 and two to |eta| < 4. For each coverage option, a layout with long barrel staves and a layout with novel inclined support structures in the barrel-endcap overlap region are considered. All potential layouts include modules mounted on ring-shaped supports in the endcap regions...

  19. FPIX2, the BTeV pixel readout chip

    CERN Document Server

    Christian, D C; Chiodini, G; Hoff, J; Kwan, S; Mekkaoui, A; Yarema, R; 10.1016/j.nima.2005.04.046

    2005-01-01

    A radiation tolerant pixel readout chip, FPIX2, has been developed at Fermilab for use by BTeV. Some of the requirements of the BTeV pixel readout chip are reviewed and contrasted with requirements for similar devices in LHC experiments. A description of the FPIX2 is given, and results of initial tests of its performance are presented, as is a summary of measurements planned for the coming year.

  20. SLID-ICV Vertical Integration Technology for the ATLAS Pixel Upgrades

    CERN Document Server

    Macchiolo, A; Moser, H G; Nisius, R; Richter, R H; Weigell, P

    2012-01-01

    We present the results of the characterization of pixel modules composed of 75 μm thick n-in-p sensors and ATLAS FE-I3 chips, interconnected with the SLID (Solid Liquid Inter-Diffusion) technology. This technique, developed at Fraunhofer-EMFT, is explored as an alternative to the bump-bonding process. These modules have been designed to demonstrate the feasibility of a very compact detector to be employed in the future ATLAS pixel upgrades, making use of vertical integration technologies. This module concept also envisages Inter-Chip-Vias (ICV) to extract the signals from the backside of the chips, thereby achieving a higher fraction of active area with respect to the present pixel module design. In the case of the demonstrator module, ICVs are etched over the original wire bonding pads of the FE-I3 chip. In the modules with ICVs the FE-I3 chips will be thinned down to 50 um. The status of the ICV preparation is presented.

  1. Multi-chip module development for the ATLAS pixel detector. Analysis of the front-end chip electronics in radiation hard 0.25-{mu}m technology as well as development and realization of a serial power concept; Multi-Chip-Modul-Entwicklung fuer den ATLAS-Pixeldetektor. Analyse der Front-End-Chip-Elektronik in strahlenharter0,25-{mu}m-Technologie sowie Entwicklung und Realisierung eines Serial-Powering-Konzeptes

    Energy Technology Data Exchange (ETDEWEB)

    Stockmanns, T.

    2004-08-01

    The innermost layer of the ATLAS tracking system is a silicon pixel detector. The use of radiation tolerant components is mandatory due to the harsh radiation environment. The smallest independent component of the pixel detector is a hybride pixel module consisting of a large oxygen enriched silicon sensor and 16 specifically developed ASICs. To achieve the necessary radiation tolerance the ASICs are produced in a 0.25 {mu}m technology in combination with special design techniques. The measurements of the readout electronics during all stages of production of a full module are presented and the performance of the modules is compared with the strict requirements of the ATLAS pixel detector. Furthermore a new powering scheme for pixel detectors is presented, aiming at reducing the total power consumption, the material for the electrical services and the amount of power cables. The advantages and disadvantages of this concept are discussed on the example of the ATLAS pixel detector with pixel modules modified accounting to the new powering scheme. The performance of six of those modules operating at the same time in a small system test is compared to that of normal ATLAS pixel modules. (orig.)

  2. Commissioning of the upgraded ATLAS Pixel Detector for Run2 at LHC

    CERN Document Server

    AUTHOR|(INSPIRE)INSPIRE-00016406

    2016-01-01

    The Pixel Detector of the ATLAS experiment has shown excellent performance during the whole Run-1 of LHC. Taking advantage of the long showdown, the detector was extracted from the experiment and brought to surface, to equip it with new service quarter panels, to repair modules and to ease installation of the Insertable B-Layer (IBL), a fourth layer of pixel detectors, installed in May 2014 between the existing Pixel Detector and a new smaller radius beam-pipe at a radius of 3.3 cm. To cope with the high radiation and pixel occupancy due to the proximity to the interaction point, a new read-out chip and two different silicon sensor technologies (planar and 3D) have been developed. An overview of the refurbishing of the Pixel Detector and of the IBL project as well as early performance tests using cosmic rays and beam data will be presented.

  3. DAQ Hardware and software development for the ATLAS Pixel Detector

    CERN Document Server

    Stramaglia, Maria Elena; The ATLAS collaboration

    2015-01-01

    In 2014, the Pixel Detector of the ATLAS experiment was extended by about 12 million pixels with the installation of the Insertable B-Layer (IBL). Data-taking and tuning procedures have been implemented by employing newly designed read-out hardware, which supports the full detector bandwidth even for calibration. The hardware is supported by an embedded software stack running on the read-out boards. The same boards will be used to upgrade the read-out bandwidth for the two outermost layers of the ATLAS Pixel Barrel (54 million pixels). We present the IBL read-out hardware and the supporting software architecture used to calibrate and operate the 4-layer ATLAS Pixel detector. We discuss the technical implementations and status for data taking, validation of the DAQ system in recent cosmic ray data taking, in-situ calibrations, and results from additional tests in preparation for Run 2 at the LHC.

  4. DAQ hardware and software development for the ATLAS Pixel Detector

    CERN Document Server

    AUTHOR|(INSPIRE)INSPIRE-00372086; The ATLAS collaboration

    2016-01-01

    In 2014, the Pixel Detector of the ATLAS experiment has been extended by about 12 million pixels thanks to the installation of the Insertable B-Layer (IBL). Data-taking and tuning procedures have been implemented along with newly designed read-out hardware to support high bandwidth for data readout and calibration. The hardware is supported by an embedded software stack running on the read-out boards. The same boards will be used to upgrade the read-out bandwidth for the two outermost layers of the ATLAS Pixel Barrel (54 million pixels). We present the IBL read-out hardware and the supporting software architecture used to calibrate and operate the 4-layer ATLAS Pixel detector. We discuss the technical implementations and status for data taking, validation of the DAQ system in recent cosmic ray data taking, in-situ calibrations, and results from additional tests in preparation for Run 2 at the LHC.

  5. FE-I4 pixel chip characterization with USBpix3 test system

    Energy Technology Data Exchange (ETDEWEB)

    Filimonov, Viacheslav; Gonella, Laura; Hemperek, Tomasz; Huegging, Fabian; Janssen, Jens; Krueger, Hans; Pohl, David-Leon; Wermes, Norbert [University of Bonn, Bonn (Germany)

    2015-07-01

    The USBpix readout system is a small and light weighting test system for the ATLAS pixel readout chips. It is widely used to operate and characterize FE-I4 pixel modules in lab and test beam environments. For multi-chip modules the resources on the Multi-IO board, that is the central control unit of the readout system, are coming to their limits, which makes the simultaneous readout of more than one chip at a time challenging. Therefore an upgrade of the current USBpix system has been developed. The upgraded system is called USBpix3 - the main focus of the talk. Characterization of single chip FE-I4 modules was performed with USBpix3 prototype (digital, analog, threshold and source scans; tuning). PyBAR (Bonn ATLAS Readout in Python scripting language) was used as readout software. PyBAR consists of FEI4 DAQ and Data Analysis Libraries in Python. The presentation describes the USBpix3 system, results of FE-I4 modules characterization and preparation for the multi-chip module and multi-module readout with USBpix3.

  6. The Phase-2 ATLAS ITk Pixel Upgrade

    CERN Document Server

    Rossi, Leonardo Paolo; The ATLAS collaboration

    2018-01-01

    The entire tracking system of the ATLAS experiment will be replaced in 2025 during the LHC Phase-II shutdown by an all-silicon detector called the “ITk” (Inner Tracker). The innermost part of ITk will be a pixel detector containing about 12.5m2 of sensitive silicon. The silicon modules are arranged on 5 layers of stave-like support structures in the most central region and ring-shaped supports in the endcap regions covering out to |η| < 4; a mid-eta region (~1 < |η| < ~2) will be occupied by novel inclined support structures which keep the angle of incidence of high-momentum tracks more closely normal to the sensitive silicon. All supports will be based on low mass, highly stable and highly thermally-conductive carbon-based materials cooled by evaporative carbon dioxide flowing in thin-walled titanium pipes. An extensive prototyping programme, including thermal, mechanical and electrical studies, is being carried out on all the types of support structures. The HL-LHC is expected to deliver up t...

  7. The Phase-2 ATLAS ITk Pixel Upgrade

    CERN Document Server

    Benoit, Mathieu; The ATLAS collaboration

    2017-01-01

    The entire tracking system of the ATLAS experiment will be replaced during the LHC Phase II shutdown (foreseen to take place around 2025) by an all-silicon detector called the “ITk” (Inner Tracker). The innermost portion of the ITk will consist of a pixel detector with stave-like support structures in the most central region and ring-shaped supports in the endcap regions; there may also be novel inclined support structures in the barrel-endcap overlap regions. The new detector could have as much as 14 m2 of sensitive silicon. Support structures will be based on low mass, highly stable and highly thermally conductive carbon-based materials cooled by evaporative carbon dioxide. The ITk will be instrumented with new sensors and readout electronics to provide improved tracking performance compared to the current detector. All the module components must be performant enough and robust enough to cope with the expected high particle multiplicity and severe radiation background of the High-Luminosity LHC. Readout...

  8. Digital column readout architecture for the ATLAS pixel 025 mum front end IC

    CERN Document Server

    Mandelli, E; Blanquart, L; Comes, G; Denes, P; Einsweiler, Kevin F; Fischer, P; Marchesini, R; Meddeler, G; Peric, I

    2002-01-01

    A fast low noise, limited power, radiation-hard front-end chip was developed for reading out the Atlas Pixel Silicon Detector. As in the past prototypes, every chip is used to digitize and read out charge and time information from hits on each one of its 2880 inputs. The basic column readout architecture idea was adopted and modified to allow a safe transition to quarter micron technology. Each pixel cell, organized in a 160 multiplied by 18 matrix, can be independently enabled and configured in order to optimize the analog signal response and to prevent defective pixels from saturating the readout. The digital readout organizes hit data coming from each column, with respect to time, and output them on a low-level serial interface. A considerable effort was made to design state machines free of undefined states, where single-point defects and charge deposited by heavy ions in the silicon could have led to unpredicted forbidden states. 7 Refs.

  9. Prototypes for components of a control system for the ATLAS pixel detector at the HL-LHC

    CERN Document Server

    Boek, J; Kind, P; Mättig, P; Püllen, L; Zeitnitz, C

    2013-01-01

    inner detector of the ATLAS experiment will be replaced entirely including the pixel detector. This new pixel detector requires a specific control system which complies with the strict requirements in terms of radiation hardness, material budget and space for the electronics in the ATLAS experiment. The University ofWuppertal is developing a concept for a DCS (Detector Control System) network consisting of two kinds of ASICs. The first ASIC is the DCS Chip which is located on the pixel detector, very close to the interaction point. The second ASIC is the DCS Controller which is controlling 4x4 DCS Chips from the outer regions of ATLAS via differential data lines. Both ASICs are manufactured in 130 nm deep sub micron technology. We present results from measurements from new prototypes of components for the DCS network.

  10. Operational performance and status of the ATLAS pixel detector at the LHC

    CERN Document Server

    Ince, T; The ATLAS collaboration

    2013-01-01

    The ATLAS Pixel Detector is the innermost detector of the ATLAS experiment at the Large Hadron Collider at CERN. The detector provides hermetic coverage with three cylindrical layers and three layers of forward and backward pixel detectors. It consists of approximately 80 million pixels that are individually read out via chips bump-bonded to 1744 n-in-n silicon substrates. In this talk, results from the successful operation of the Pixel Detector at the LHC and its status after three years of operation will be presented, including monitoring, calibration procedures, timing optimization and detector performance. The record breaking instantaneous luminosities of 7.7 x 10^33 cm-2 s-1 recently surpassed at the Large Hadron Collider generate a rapidly increasing particle fluence in the ATLAS Pixel Detector. As the radiation dose accumulates, the first effects of radiation damage are now observable in the silicon sensors. A regular monitoring program has been conducted and reveals an increase in the silicon leakage ...

  11. Operational Performance and Status of the ATLAS Pixel Detector at the LHC

    CERN Document Server

    Jentzsch, J; The ATLAS collaboration

    2013-01-01

    The ATLAS Pixel Detector is the innermost detector of the ATLAS experiment at the Large Hadron Collider at CERN. The detector provides hermetic coverage with three cylindrical layers and three layers of forward and backward pixel detectors. It consists of approximately 80 million pixels that are individually read out via chips bump-bonded to 1744 n-in-n silicon substrates. In this talk, results from the successful operation of the Pixel Detector at the LHC and its status after three years of operation will be presented, including monitoring, calibration procedures, timing optimization and detector performance. The record breaking instantaneous luminosities of 7.7 x 10^33 cm-2 s-1 recently surpassed at the Large Hadron Collider generate a rapidly increasing particle fluence in the ATLAS Pixel Detector. As the radiation dose accumulates, the first effects of radiation damage are now observable in the silicon sensors. A regular monitoring program has been conducted and reveals an increase in the silicon leakage ...

  12. Status and future of the ATLAS Pixel Detector at the LHC

    CERN Document Server

    Rozanov, A; The ATLAS collaboration

    2013-01-01

    The ATLAS Pixel Detector is the innermost detector of the ATLAS experiment at the Large Hadron Collider at CERN. The detector provides hermetic coverage with three cylindrical layers and three layers of forward and backward pixel detectors. It consists of approximately 80 million pixels that are individually read out via chips bump-bonded to 1744 n-in-n silicon substrates. In this talk, results from the successful operation of the Pixel Detector at the LHC and its status after three years of operation will be presented, including monitoring, calibration procedures, timing optimization and detector performance. The record breaking instantaneous luminosities of 7.7 x 10^33 cm-2 s-1 recently surpassed at the Large Hadron Collider generate a rapidly increasing particle fluence in the ATLAS Pixel Detector. As the radiation dose accumulates, the first effects of radiation damage are now observable in the silicon sensors. A regular monitoring program has been conducted and reveals an increase in the silicon leakage ...

  13. Operational Performance and Status of the ATLAS Pixel Detector at the LHC

    CERN Document Server

    Jentzsch, J; The ATLAS collaboration

    2014-01-01

    The ATLAS Pixel Detector is the innermost detector of the ATLAS experi- ment at the Large Hadron Collider at CERN. The detector provides hermetic coverage with three cylindrical layers and three layers of forward and backward pixel detectors. It consists of approximately 80 million pixels that are individu- ally read out via chips bump-bonded to 1744 n+-in-n silicon substrates. In this talk, results from the successful operation of the Pixel Detector at the LHC and its status after three years of operation will be presented, including moni- toring, calibration procedures, timing optimization and detector performance. The record breaking instantaneous luminosities of 7.7 · 1033 cm−2s−1 recently surpassed at the Large Hadron Collider generate a rapidly increasing particle fluence in the ATLAS Pixel Detector. As the radiation dose accumulates, the first effects of radiation damage are now observable in the silicon sensors. A regular monitoring program has been conducted and reveals an increase in the silico...

  14. The upgraded Pixel Detector of the ATLAS Experiment for Run2 at the Large Hadron Collider

    CERN Document Server

    AUTHOR|(INSPIRE)INSPIRE-00235789; The ATLAS collaboration

    2016-01-01

    During Run-1 of the Large Hadron Collider (LHC), the ATLAS Pixel Detector has shown excellent performance. The ATLAS collaboration took advantage of the first long shutdown of the LHC during 2013 and 2014 and extracted the ATLAS Pixel Detector from the experiment, brought it to surface and maintained the services. This includes the installation of new service quarter panels, the repair of cables, and the installation of the new Diamond Beam Monitor (DBM). Additionally a completely new innermost pixel detector layer, the Insertable B-Layer (IBL), was constructed and installed in May 2014 between a new smaller beam pipe and the existing Pixel Detector. With a radius of 3.3 cm the IBL is located extremely close to the interaction point. Therefore a new readout chip and two new sensor technologies (planar and 3D) are used in IBL. In order to achieve best possible physics performance the material budget was improved with respect to the existing Pixel Detector. This is realized using lightweight staves for mechanic...

  15. Digital column readout architectures for hybrid pixel detector readout chips

    CERN Document Server

    Poikela, T; Westerlund, T; Buytaert, J; Campbell, M; De Gaspari, M; Llopart, X; Wyllie, K; Gromov, V; Kluit, R; van Beuzekom, M; Zappon, F; Zivkovic, V; Brezina, C; Desch, K; Fu, Y; Kruth, A

    2014-01-01

    In this paper, two digital column architectures suitable for sparse readout of data from a pixel matrix in trigger-less applications are presented. Each architecture reads out a pixel matrix of 256 x 256 pixels with a pixel pitch of 55 µm. The first architecture has been implemented in the Timepix3 chip, and this is presented together with initial measurements. Simulation results and measured data are compared. The second architecture has been designed for Velopix, a readout chip planned for the LHCb VELO upgrade. Unlike Timepix3, this has to be tolerant to radiation-induced single-event effects. Results from post-layout simulations are shown with the circuit architectures.

  16. Thin n-in-p planar pixel modules for the ATLAS upgrade at HL-LHC

    Science.gov (United States)

    Savic, N.; Bergbreiter, L.; Breuer, J.; La Rosa, A.; Macchiolo, A.; Nisius, R.; Terzo, S.

    2017-02-01

    The ATLAS experiment will undergo a major upgrade of the tracker system in view of the high luminosity phase of the LHC (HL-LHC) foreseen to start around 2025. Thin planar pixel modules are promising candidates to instrument the new pixel system, thanks to the reduced contribution to the material budget and their high charge collection efficiency after irradiation. New designs of the pixel cells, with an optimized biasing structure, have been implemented in n-in-p planar pixel productions with sensor thicknesses of 270 μm. Using beam tests, the gain in hit efficiency is investigated as a function of the received irradiation fluence. The outlook for future thin planar pixel sensor productions will be discussed, with a focus on thin sensors with a thickness of 100 and 150 μm and a novel design with the optimized biasing structure and small pixel cells (50×50 and 25×100 μm2). These dimensions are foreseen for the new ATLAS read-out chip in 65 nm CMOS technology and the fine segmentation will represent a challenge for the tracking in the forward region of the pixel system at HL-LHC. To predict the performance of 50×50 μm2 pixels at high η, FE-I4 compatible planar pixel sensors have been studied before and after irradiation in beam tests at high incidence angle with respect to the short pixel direction. Results on cluster shapes, charge collection- and hit efficiency will be shown.

  17. Thin n-in-p planar pixel modules for the ATLAS upgrade at HL-LHC

    Energy Technology Data Exchange (ETDEWEB)

    Savic, N., E-mail: natascha.savic@mpp.mpg.de; Bergbreiter, L.; Breuer, J.; La Rosa, A.; Macchiolo, A.; Nisius, R.; Terzo, S.

    2017-02-11

    The ATLAS experiment will undergo a major upgrade of the tracker system in view of the high luminosity phase of the LHC (HL-LHC) foreseen to start around 2025. Thin planar pixel modules are promising candidates to instrument the new pixel system, thanks to the reduced contribution to the material budget and their high charge collection efficiency after irradiation. New designs of the pixel cells, with an optimized biasing structure, have been implemented in n-in-p planar pixel productions with sensor thicknesses of 270 μm. Using beam tests, the gain in hit efficiency is investigated as a function of the received irradiation fluence. The outlook for future thin planar pixel sensor productions will be discussed, with a focus on thin sensors with a thickness of 100 and 150 μm and a novel design with the optimized biasing structure and small pixel cells (50×50 and 25×100 μm{sup 2}). These dimensions are foreseen for the new ATLAS read-out chip in 65 nm CMOS technology and the fine segmentation will represent a challenge for the tracking in the forward region of the pixel system at HL-LHC. To predict the performance of 50×50 μm{sup 2} pixels at high η, FE-I4 compatible planar pixel sensors have been studied before and after irradiation in beam tests at high incidence angle with respect to the short pixel direction. Results on cluster shapes, charge collection- and hit efficiency will be shown.

  18. Irradiation and beam tests qualification for ATLAS IBL Pixel Modules

    CERN Document Server

    Rubinskiy, Igor

    2013-01-01

    The upgrade for the ATLAS detector will have different steps towards HL-LHC. The first upgrade for the Pixel Detector will consist in the construction of a new pixel layer which will be installed during the first shutdown of the LHC machine (foreseen for 2013-14). The new detector, called Insertable B-Layer (IBL), will be inserted between the existing pixel detector and a new (smaller radius) beam-pipe at a radius of 33 mm. The IBL will require the development of several new technologies to cope with the increase of the radiation damage and the pixel occupancy and also to improve the physics performance, which will be achieved by reduction of the pixel size and of the material budget. Two different promising silicon sensor technologies (Planar n-in-n and 3D) are currently under investigation for the pixel detector. An overview of the sensor technologies’ qualification with particular emphasis on irradiation and beam tests are presented.

  19. Irradiation and beam tests qualification for ATLAS IBL Pixel Modules

    CERN Document Server

    Rubinskiy, I

    2013-01-01

    The upgrade for the ATLAS detector will have different steps towards HL-LHC. The first upgrade for the Pixel Detector will consist in the construction of a new pixel layer which will be installed during the first shutdown of the LHC machine (foreseen for 2013–2014). The new detector, called Insertable B-Layer (IBL), will be inserted between the existing Pixel Detector and a new (smaller radius) beam-pipe at a radius of 33 mm. The IBL will require the development of several new technologies to cope with the increase in the radiation damage and the pixel occupancy and also to improve the physics performance, which will be achieved by reduction of the pixel size and of the material budget. Two different promising silicon sensor technologies (Planar n-in-n and 3D) are currently under investigation for the Pixel Detector. An overview of the sensor technologies' qualification with particular emphasis on irradiation and beam tests is presented.

  20. Operational Experience and Performance with the ATLAS Pixel detector

    CERN Document Server

    Martin, Christopher Blake; The ATLAS collaboration

    2018-01-01

    The tracking performance of the ATLAS detector relies critically on its 4-layer Pixel Detector, that has undergone significant hardware and software upgrades to meet the challenges imposed by the higher collision energy, pileup and luminosity that are being delivered by the Large Hadron Collider, with record breaking instantaneous luminosities of 1.3 x 10^34 cm-2 s-1 recently surpassed. The key status and performance metrics of the ATLAS Pixel Detector are summarised, and the operational experience and requirements to ensure optimum data quality and data taking efficiency are described, with special emphasis to radiation damage experience.

  1. Operational Experience and Performance with the ATLAS Pixel detector

    CERN Document Server

    Martin, Christopher Blake; The ATLAS collaboration

    2018-01-01

    The tracking performance of the ATLAS detector relies critically on its 4-layer Pixel Detector, that has undergone significant hardware and software upgrades to meet the challenges imposed by the higher collision energy, pileup and luminosity that are being delivered by the Large Hadron Collider, with record breaking instantaneous luminosities of $1.3\\times10^{34}\\text{cm}^{{-2}}\\text{s}^{{-1}}$ recently surpassed. The key status and performance metrics of the ATLAS Pixel Detector are summarized, and the operational experience and requirements to ensure optimum data quality and data taking efficiency are described, with special emphasis to radiation damage experience.

  2. ATLAS Inner Detector (Pixel Detector and Silicon Tracker)

    CERN Multimedia

    ATLAS Outreach

    2006-01-01

    To raise awareness of the basic functions of the Pixel Detector and Silicon Tracker in the ATLAS detector on the LHC at CERN. This colorful 3D animation is an excerpt from the film "ATLAS-Episode II, The Particles Strike Back." Shot with a bug's eye view of the inside of the detector. The viewer is taken on a tour of the inner workings of the detector, seeing critical pieces of the detector and hearing short explanations of how each works.

  3. Slim edge studies, design and quality control of planar ATLAS IBL pixel sensors

    Energy Technology Data Exchange (ETDEWEB)

    Wittig, Tobias

    2013-05-08

    One of the four large experiments at the LHC at CERN is the ATLAS detector, a multi purpose detector. Its pixel detector, composed of three layers, is the innermost part of the tracker. As it is closest to the interaction point, it represents a basic part of the track reconstruction. Besides the requested high resolution one main requirement is the radiation hardness. In the coming years the radiation damage will cause deteriorations of the detector performance. With the planned increase of the luminosity, especially after the upgrade to the High Luminosity LHC, this radiation damage will be even intensified. This circumstance necessitates a new pixel detector featuring improved radiation hard sensors and read-out chips. The present shutdown of the LHC is already utilized to insert an additional b-layer (IBL) into the existing ATLAS pixel detector. The current n-in-n pixel sensor design had to be adapted to the new read-out chip and the module specifications. The new stave geometry requests a reduction of the inactive sensor edge. In a prototype wafer production all modifications have been implemented. The sensor quality control was supervised which led to the decision of the final sensor thickness. In order to evaluate the performance of the sensor chip assemblies with an innovative slim edge design, they have been operated in test beam setups before and after irradiation. Furthermore, the quality control of the planar IBL sensor wafer production was supervised from the stage of wafer delivery to that before the flip chip process to ensure a sufficient amount of functional sensors for the module production.

  4. First MCM-D modules for the b-physics layer of the ATLAS Pixel Detector

    CERN Document Server

    Basken, O; Ehrmann, O; Gerlach, P; Grah, C; Gregor, I M; Linder, C; Meuser, S; Richardson, J; Topper, M; Wolf, J

    2000-01-01

    The innermost layer (b-physics layer) of the ATLAS Pixel Detector will consist of modules based on MCM-D technology. Such a module consists of a sensor tile with an active area of 16.4 mm*60.4 mm, 16 read out ICs, each serving 24* 160 pixel unit cells, a module controller chip (MCC), an optical transceiver and the local signal interconnection and power distribution busses. We show a prototype of such a module with additional test pads on both sides. The outer dimensions of the final module will be 21.4 mm*67.8 mm. The extremely high wiring density, which is necessary to interconnect the read-out chips, was achieved using a thin film copper/photo-BCB process on the pixel array. The bumping of the read out chips was done using electroplating PbSn. All dice are then attached by flip-chip assembly to the sensor diodes and the local busses. The focus of this paper is the description of the first results of such MCM-D-type modules. (11 refs).

  5. Characterization of new hybrid pixel module concepts for the ATLAS Insertable B-Layer upgrade

    CERN Document Server

    Backhaus, M

    2012-01-01

    The ATLAS Insertable B-Layer (IBL) collaboration plans to insert a fourth pixel layer inside the present Pixel Detector to recover from eventual failures in the current pixel system, especially the b-layer. Additionally the IBL will ensure excellent tracking, vertexing and b-tagging performance during the LHC phase I and add robustness in tracking with high luminosity pile-up. The expected peak luminosity for IBL is 2 to 3•10^34 cm^−2 s^ −1 and IBL is designed for an integrated luminosity of 700 fb^−1 . This corresponds to an expected fluence of 5 • 10^15 1 MeV n_eqcm^−2 and a total ionizing dose of 250 MRad. In order to cope with these requirements, two new module concepts are under investigation, both based on a new front end IC, called FE-I4. This IC was designed as readout chip for future ATLAS Pixel Detectors and its first application will be the IBL. The planar pixel sensor (PPS) based module concept benefits from its well understood design, which is kept as similar as possible to the design...

  6. Characterization of new hybrid pixel module concepts for the ATLAS Insertable B-Layer upgrade

    CERN Document Server

    Backhaus, Malte

    2012-01-01

    The ATLAS Insertable B-Layer (IBL) collaboration plans to insert a fourth pixel layer inside the present Pixel Detector to recover from eventual failures in the current pixel system, especially the b-layer. Additionally the IBL will ensure excellent tracking, vertexing and b-tagging performance during the LHC phase I and add robustness in tracking with high luminosity pile-up. The expected peak luminosity for IBL is 2 to 3centerdot1034 cm-2s-1 and IBL is designed for an integrated luminosity of 700 fb-1. This corresponds to an expected fluence of 5centerdot1015 1 MeV neqcm-2 and a total ionizing dose of 250 MRad. In order to cope with these requirements, two new module concepts are under investigation, both based on a new front end IC, called FE-I4. This IC was designed as readout chip for future ATLAS Pixel Detectors and its first application will be the IBL. The planar pixel sensor (PPS) based module concept benefits from its well understood design, which is kept as similar as possible to the design of the ...

  7. The Pixel Detector of the ATLAS Experiment for the Run 2 at the Large Hadron Collider

    CERN Document Server

    Mandelli, B; The ATLAS collaboration

    2014-01-01

    The Pixel Detector of the ATLAS experiment has shown excellent performance during the whole Run 1 of LHC. Taking advantage of the long shutdown, the detector was extracted from the experiment and brought to surface, to equip it with new service quarter panels, to repair modules and to ease installation of the Insertable B-Layer (IBL). The IBL is a fourth layer of pixel detectors, and has been installed in May 2014 between the existing Pixel Detector and a new smaller radius beam-pipe. To cope with the high radiation and pixel occupancy due to the proximity to the interaction point, a new read-out chip and two different silicon sensor technologies (planar and 3D) have been developed. Furthermore, the physics performance will be improved through the reduction of pixel size while, targeting for a low material budget, a new mechanical support using lightweight staves and a CO$_2$ based cooling system have been adopted. The IBL construction and installation in the ATLAS Experiment has been completed very successfu...

  8. Operational Experience and Performance with the ATLAS Pixel detector

    CERN Document Server

    Yang, Hongtao; The ATLAS collaboration

    2018-01-01

    In this presentation, I will discuss the operation of ATLAS Pixel Detector during Run 2 proton-proton data-taking at √s=13 TeV in 2017. The topics to be covered include 1) the bandwidth issue and how it is mitigated through readout upgrade and threshold adjustment; 2) the auto-corrective actions; 3) monitoring of radiation effects.

  9. A Novel Optical Package for ATLAS Pixel Detector

    CERN Document Server

    Gan, K K

    2001-01-01

    An optical package of novel design has been developed for the ATLAS pixel detector. The package contains two VCSELs and one PIN diode to transmit and receive optical signals. The design is based on a simple connector-type concept and is made of radiation-hard material. Several packages have been fabricated and show promising results.

  10. Development of n-in-p pixel modules for the ATLAS Upgrade at HL-LHC

    CERN Document Server

    Macchiolo, Anna; Savic, Natascha; Terzo, Stefano

    2016-01-01

    Thin planar pixel modules are promising candidates to instrument the inner layers of the new ATLAS pixel detector for HL-LHC, thanks to the reduced contribution to the material budget and their high charge collection efficiency after irradiation. 100-200 $\\mu$m thick sensors, interconnected to FE-I4 read-out chips, have been characterized with radioactive sources and beam tests at the CERN-SPS and DESY. The results of these measurements are reported for devices before and after irradiation up to a fluence of $14\\times10^{15}$ n$_{eq}$/cm$^2$. The charge collection and tracking efficiency of the different sensor thicknesses are compared. The outlook for future planar pixel sensor production is discussed, with a focus on sensor design with the pixel pitches (50x50 and 25x100 $\\mu$m$^2$) foreseen for the RD53 Collaboration read-out chip in 65 nm CMOS technology. An optimization of the biasing structures in the pixel cells is required to avoid the hit efficiency loss presently observed in the punch-through region...

  11. Module and electronics developments for the ATLAS ITK pixel system

    CERN Document Server

    Munoz Sanchez, Francisca Javiela; The ATLAS collaboration

    2017-01-01

    The ATLAS experiment is preparing for an extensive modification of its detectors in the course of the planned HL-LHC accelerator upgrade around 2025. The ATLAS upgrade includes the replacement of the entire tracking system by an all-silicon detector (Inner Tracker, ITk). The five innermost layers of ITk will be a pixel detector built of new sensor and readout electronics technologies to improve the tracking performance and cope with the severe HL-LHC environment in terms of occupancy and radiation. The total area of the new pixel system could measure up to 14 m2, depending on the final layout choice, which is expected to take place in 2017. In this paper an overview of the ongoing R\\&D activities on modules and electronics for the ATLAS ITk is given including the main developments and achievements in silicon planar and 3D sensor technologies, readout and power challenges.

  12. Results from the Commissioning of the ATLAS Pixel Detector

    CERN Document Server

    Strandberg, S

    2009-01-01

    The ATLAS pixel detector is a high resolution, silicon based, tracking detector with its innermost layer located only 5 cm away from the ATLAS interaction point. It is designed to provide good hit resolution and low noise, both important qualities for pattern recognition and for finding secondary vertices originating from decays of long-lived particles. The pixel detector has 80 million readout channels and is built up of three barrel layers and six disks, three on each side of the barrel. The detector was installed in the center of ATLAS in June 2007 and is currently being calibrated and commissioned. Details from the installation, commissioning and calibration are presented together with the current status.

  13. Modeling Radiation Damage to Pixel Sensors in the ATLAS Detector

    CERN Document Server

    Nachman, Benjamin Philip; The ATLAS collaboration

    2017-01-01

    Silicon Pixel detectors are at the core of the current and planned upgrade of the ATLAS detector. As the detector in closest proximity to the interaction point, these detectors will be subjected to a significant amount of radiation over their lifetime: prior to the HL-LHC, the innermost layers will receive a fluence in excess of $10^{15}$ 1 MeV $n_\\mathrm{eq}/\\mathrm{cm}^2$ and the HL-LHC detector upgrades must cope with an order of magnitude higher fluence integrated over their lifetimes. This talk presents a digitization model that includes radiation damage effects to the ATLAS Pixel sensors for the first time. After a thorough description of the setup, predictions for basic Pixel cluster properties are presented alongside first validation studies with Run 2 collision data.

  14. Online calibrations and performance of the ATLAS Pixel Detector

    CERN Document Server

    Keil, M; The ATLAS collaboration

    2010-01-01

    The ATLAS Pixel Detector is the innermost detector of the ATLAS experiment at the Large Hadron Collider at CERN. It consists of 1744 silicon sensors equipped with approximately 80 M electronic channels, providing typically three measurement points with high resolution for particles emerging from the beam-interaction region, thus allowing measuring particle tracks and secondary vertices with very high precision. The readout system of the Pixel Detector is based on a bi-directional optical data transmission system between the detector and the data acquisition system with an individual link for each of the 1744 modules. Signal conversion components are located on both ends, approximately 80 m apart. The talk will give an overview of the calibration and performance of both the detector and its optical readout. The most basic parameter to be tuned and calibrated for the detector electronics is the readout threshold of the individual pixel channels. These need to be carefully tuned to optimise position resolution a...

  15. Production accompanying testing of the ATLAS Pixel module

    CERN Document Server

    AUTHOR|(CDS)2067982; Klingenberg, R

    2004-01-01

    The ATLAS Pixel detector, innermost sub-detector of the ATLAS experiment at LHC, CERN, can be sensibly tested in its entirety the first time after its installation in 2006. Because of the poor accessibility (probably once per year) of the Pixel detector and tight scheduling the replacement of damaged modules after integration as well as during operation will become a highly exposed business. Therefore and to ensure that no affected parts will be used in following production steps, it is necessary that each production step is accompanied by testing the components before assembly and make sure the operativeness afterwards. Probably 300 of about total 2000 semiconductor hybrid pixel detector modules will be build at the Universität Dortmund. Thus a production test setup has been build up and examined before starting serial production. These tests contain the characterization and inspection of the module components and the module itself under different environmental conditions and diverse operating parameters. O...

  16. Calibration Analysis Software for the ATLAS Pixel Detector

    CERN Document Server

    Stramaglia, Maria Elena; The ATLAS collaboration

    2015-01-01

    The calibration of the Pixel detector fulfills two main purposes: to tune front-end registers for establishing the best operational settings and to measure the tuning performance through a subset of scans. An analysis framework has been set up in order to take actions on the detector given the outcome of a calibration scan (e.g. to create a mask for disabling noisy pixels). The software framework to control all aspects of the Pixel detector scans and analyses is called Calibration Console. The introduction of a new layer, equipped with new Front End-I4 Chips, required an update the Console architecture. It now handles scans and scans analyses applied toghether to chips with dierent characteristics. An overview of the newly developed Calibration Analysis Software will be presented, together with some preliminary result.

  17. The upgraded Pixel Detector of the ATLAS Experiment for Run2 at the Large Hadron Collider

    CERN Document Server

    Backhaus, Malte; The ATLAS collaboration

    2015-01-01

    Run-2 of the LHC will provide new challenges to track and vertex reconstruction with higher energies, denser jets and higher rates. Therefore the ATLAS experiment has constructed the first 4-layer Pixel detector in HEP, installing a new Pixel layer, also called Insertable B-Layer (IBL). IBL is a fourth layer of pixel detectors, and has been installed in May 2014 at a radius of 3.3 cm between the existing Pixel Detector and a new smaller radius beam-pipe. To cope with the high radiation and pixel occupancy due to the proximity to the interaction point, two different silicon sensor technologies (planar and 3D) have been developed as well as a new read-out chip within CMOS 130nm technology and with larger area, smaller pixel size and faster readout capability. The new detector is the first large scale application of of 3D detectors and CMOS 130nm technology. An overview of the lessons learned during the IBL project will be presented, focusing on the challenges and highlighting the issues met during the productio...

  18. The ATLAS Pixel Detector for Run II at the Large Hadron Collider

    CERN Document Server

    Marx, Marilyn; The ATLAS collaboration

    2014-01-01

    The Pixel Detector of the ATLAS experiment has shown excellent performance during the whole Run-1 of LHC. Taking advantage of the long showdown, the detector was extracted from the experiment and brought to surface, to equip it with new service quarter panels, to repair modules and to ease installation of the Insertable B-Layer (IBL). IBL is a fourth layer of pixel detectors, and has been installed in May 2014 between the existing Pixel Detector and a new smaller radius beam-pipe at a radius of 3.3 cm. To cope with the high radiation and pixel occupancy due to the proximity to the interaction point, a new read-out chip and two different silicon sensor technologies (planar and 3D) have been developed. Furthermore, the physics performance will be improved through the reduction of pixel size while, targeting for a low material budget, a new mechanical support using lightweight staves and a CO2 based cooling system have been adopted. An overview of the refurbishing of the Pixel Detector and of the IBL project as ...

  19. Commissioning of the upgraded ATLAS Pixel Detector for Run2 at LHC

    CERN Document Server

    ATLAS Pixel Collaboration; The ATLAS collaboration

    2015-01-01

    The Pixel Detector of the ATLAS experiment has shown excellent performance during the whole Run-1 of LHC. Taking advantage of the long showdown, the detector was extracted from the experiment and brought to surface, to equip it with new service quarter panels, to repair modules and to ease installation of the Insertable B-Layer (IBL). IBL is a fourth layer of pixel detectors, and has been installed in May 2014 between the existing Pixel Detector and a new smaller radius beam-pipe at a radius of 3.3 cm. To cope with the high radiation and pixel occupancy due to the proximity to the interaction point, a new read-out chip and two different silicon sensor technologies (planar and 3D) have been developed. Furthermore, the physics performance will be improved through the reduction of pixel size while, targeting for a low material budget, a new mechanical support using lightweight staves and a CO2 based cooling system have been adopted. An overview of the refurbishing of the Pixel Detector and of the IBL project as ...

  20. The Pixel Detector of the ATLAS experiment for the Run2 at the Large Hadron Collider

    CERN Document Server

    INSPIRE-00237659

    2015-01-01

    The Pixel Detector of the ATLAS experiment has shown excellent performance during the whole Run-1 of LHC. Taking advantage of the long showdown, the detector was extracted from the experiment and brought to surface, to equip it with new service quarter panels, to repair modules and to ease installation of the Insertable B-Layer (IBL). IBL is a fourth layer of pixel detectors, and has been installed in May 2014 between the existing Pixel Detector and a new smaller radius beam-pipe at a radius of 3.3 cm. To cope with the high radiation and pixel occupancy due to the proximity to the interaction point, a new read-out chip and two different silicon sensor technologies (planar and 3D) have been developed. Furthermore, the physics performance will be improved through the reduction of pixel size while, targeting for a low material budget, a new mechanical support using lightweight staves and a CO2 based cooling system have been adopted. An overview of the refurbishing of the Pixel Detect or and of the IBL project as...

  1. The Pixel Detector of the ATLAS Experiment for LHC Run-2

    CERN Document Server

    Pernegger, H; The ATLAS collaboration

    2014-01-01

    The Pixel Detector of the ATLAS experiment has shown excellent performance during the whole Run-1 of LHC. Taking advantage of the long showdown, the detector was extracted from the experiment and brought to surface, to equip it with new service quarter panels, to repair modules and to ease installation of the Insertable B-Layer (IBL). IBL is a fourth layer of pixel detectors, and has been installed in May 2014 between the existing Pixel Detector and a new smaller radius beam-pipe at a radius of 3.3 cm. To cope with the high radiation and pixel occupancy due to the proximity to the interaction point, a new read-out chip and two different silicon sensor technologies (planar and 3D) have been developed. Furthermore, the physics performance will be improved through the reduction of pixel size while, targeting for a low material budget, a new mechanical support using lightweight staves and a CO2 based cooling system have been adopted. An overview of the refurbishing of the Pixel Detector and of the IBL project as ...

  2. The Pixel Detector of the ATLAS experiment for the Run2 at the Large Hadron Collider

    CERN Document Server

    Takubo, Y; The ATLAS collaboration

    2014-01-01

    The Pixel Detector of the ATLAS experiment has shown excellent performance during the whole Run-1 of LHC. Taking advantage of the long shutdown, the detector was extracted from the experiment and brought to surface, to equip it with new service quarter panels, to repair the modules and to ease installation of the Insertable B-Layer (IBL). The IBL is a fourth layer of pixel detectors, and has been installed in May 2014 between the existing Pixel Detector and a new smaller radius beam-pipe at a radius of 3.3 cm. To cope with the high radiation and pixel occupancy due to the proximity to the interaction point, a new read-out chip and two different silicon sensor technologies (planar and 3D) have been developed. Furthermore, the physics performance will be improved through the reduction of pixel size while, targeting for a low material budget, a new mechanical support using light weight staves and CO$_{2}$ based cooling system have been adopted. An overview of the refurbishing of the Pixel Detector and the IBL pr...

  3. KPIX a pixel detector imaging chip

    CERN Document Server

    Cadeddu, S; Caria, M

    2002-01-01

    We present a VLSI custom device, named KPIX, developed in a 0.6 mu m CMOS technology. The circuit is dedicated to readout solid-state detectors covering large areas (on the order of square centimetre) and featuring very small currents. KPIX integrates 1024 channels (current amplifiers) and 8 ADCs on a 15.5x4 mm sup 2 area. Both an analogue and digital readout are allowed, with a 10 bit amplitude resolution. Amplifiers are organized in 8 columns of 128 rows. When choosing the digital or the analogue readout, the complete set of channels can be read out in about 30 ms. The specific design of the amplification cells allows to measure very small input current levels, on the order of fractions of pico-ampere. Power consumption has also been kept at the level of 80 mu W per cell and 150 mW (peak value) in total. The specific chip architecture and geometry allow use of many KPIX circuits together in order to serve a large detector sensitive area. The KPIX structure is presented along with some measurements character...

  4. Robustness of the ATLAS pixel clustering neural network algorithm

    CERN Document Server

    AUTHOR|(INSPIRE)INSPIRE-00407780; The ATLAS collaboration

    2016-01-01

    Proton-proton collisions at the energy frontier puts strong constraints on track reconstruction algorithms. In the ATLAS track reconstruction algorithm, an artificial neural network is utilised to identify and split clusters of neighbouring read-out elements in the ATLAS pixel detector created by multiple charged particles. The robustness of the neural network algorithm is presented, probing its sensitivity to uncertainties in the detector conditions. The robustness is studied by evaluating the stability of the algorithm's performance under a range of variations in the inputs to the neural networks. Within reasonable variation magnitudes, the neural networks prove to be robust to most variation types.

  5. Operational experience of ATLAS SCT and Pixel Detector

    CERN Document Server

    Kocian, Martin; The ATLAS collaboration

    2017-01-01

    The ATLAS Inner Detector based on silicon sensors is consisting of a strip detector (SCT) and a pixel detector. It is the crucial component for vertexing and tracking in the ATLAS experiment. With the excellent performance of the LHC well beyond the original specification the silicon tracking detectors are facing substantial challenges in terms of data acquisition, radiation damage to the sensors, and SEUs in the readout ASICs. The approaches on how the detector systems cope with the demands of high luminosity operation while maintaining excellent performance through hardware upgrades, software and firmware algorithms, and operational settings, are presented.

  6. Online calibration and performance of the ATLAS Pixel Detector

    Energy Technology Data Exchange (ETDEWEB)

    Keil, Markus, E-mail: markus.keil@cern.ch [CERN, 1211 Geneva 23 (Switzerland); II. Physikalisches Institut, Universitaet Goettingen, Friedrich-Hund-Platz 1, 37077 Goettingen (Germany)

    2011-09-11

    The ATLAS Pixel Detector is the innermost detector of the ATLAS experiment at the Large Hadron Collider at CERN. It consists of 1744 silicon sensors equipped with approximately 80 million electronic channels, providing typically three measurement points with high resolution for particles emerging from the beam-interaction region, thus allowing measuring particle tracks and secondary vertices with very high precision. The readout system of the Pixel Detector is based on a bi-directional optical data transmission system between the detector and the data acquisition system with an individual link for each of the 1744 modules. Signal conversion components are located on both ends, approximately 80 m apart. This paper describes the tuning and calibration of the optical links and the detector modules, including measurements of threshold, noise, charge measurement, timing performance and the sensor leakage current.

  7. Online Calibration and Performance of the ATLAS Pixel Detector

    CERN Document Server

    Keil, M

    2011-01-01

    The ATLAS Pixel Detector is the innermost detector of the ATLAS experiment at the Large Hadron Collider at CERN. It consists of 1744 silicon sensors equipped with approximately 80 million electronic channels, providing typically three measurement points with high resolution for particles emerging from the beam-interaction region, thus allowing measuring particle tracks and secondary vertices with very high precision. The readout system of the Pixel Detector is based on a bi-directional optical data transmission system between the detector and the data acquisition system with an individual link for each of the 1744 modules. Signal conversion components are located on both ends, approximately 80 m apart. This paper describes the tuning and calibration of the optical links and the detector modules, including measurements of threshold, noise, charge measurement, timing performance and the sensor leakage current.

  8. Radiation-Hard ASICs for Optical Data Transmission in the ATLAS Pixel Detector

    CERN Document Server

    Gan, K K; Johnson, M; Kagan, H; Kass, R; Rush, C; Smith, S; Ter-Antonian, R; Zöller, M; Ciliox, A; Holderb, M; Ziolkowski, M

    2006-01-01

    We have developed two radiation-hard ASICs for optical data transmission in the ATLAS pixel detector at the LHC at CERN: a driver chip for a Vertical Cavity Surface Emitting Laser (VCSEL) diode for 80 Mbit/s data transmission from the detector, and a Bi-Phase Mark decoder chip to recover the control data and 40 MHz clock received optically by a PIN diode. We have successfully implemented both ASICs in 0.25 mm CMOS technology using enclosed layout transistors and guard rings for increased radiation hardness. We present results from circuits of final design and from irradiation studies with 24 GeV protons up to 80 Mrad (2.6 x 10^15 p/cm^2).

  9. Radiation-hard ASICs for optical data transmission in the ATLAS pixel detector

    CERN Document Server

    INSPIRE-00083439; Arms, Kregg E.; Johnson, M.; Kagan, H.; Kass, R.; Rush, C.; Smith, S.; Ter-Antonian, R.; Zoeller, M.M.; Ciliox, A.; Holder, M.; Ziolkowski, M.

    2005-01-01

    We have developed two radiation-hard ASICs for optical data transmission in the ATLAS pixel detector at the LHC at CERN: a driver chip for a Vertical Cavity Surface Emitting Laser (VCSEL) diode for 80 Mbit/s data transmission from the detector, and a Bi-Phase Mark decoder chip to recover the control data and 40 MHz clock received optically by a PIN diode. We have successfully implemented both ASICs in 0.25 mm CMOS technology using enclosed layout transistors and guard rings for increased radiation hardness. We present results from circuits of final design and from irradiation studies with 24 GeV protons up to 62 Mrad (2.3 x 10^15 p/cm^2).

  10. Radiation-hard ASICs for optical data transmission in the ATLAS pixel detector

    CERN Document Server

    Kass, R; Gan, K K; Johnson, M; Kagan, H; Rush, C J; Rahimi, A; Smith, S; Ter-Antonian, R; Zoeller, M M; Ciliox, A; Holder, M; Nderitu, S; Ziolkowski, M

    2003-01-01

    We have developed two radiation-hard ASICs for optical data transmission in the ATLAS pixel detector at the LHC at CERN: a driver chip for a Vertical Cavity Surface Emitting Laser (VCSEL) diode for 80 Mbit/s data transmission from the detector, and a Bi-Phase Mark decoder chip to recover the control data and 40 MHz clock received optically by a PIN diode. We have successfully implemented both ASICs in 0.25 um CMOS technology using enclosed layout transistors and guard rings for increased radiation hardness. We present results from prototype circuits and from irradiation studies with 24 GeV protons up to 57 Mrad (1.9 x 10e15 p/cm2).

  11. The Pixel Detector of the ATLAS experiment for the Run2 at the Large Hadron Collider

    CERN Document Server

    Oide, H; The ATLAS collaboration

    2014-01-01

    The Pixel Detector of the ATLAS experiment has shown excellent performance during the whole Run-1 of LHC. Taking advantage of the long showdown, the detector was extracted from the experiment and brought to surface, to equip it with new service quarter panels, to repair modules and to ease installation of the Insertable B-Layer (IBL). IBL is a fourth layer of pixel detectors, and will be installed in May 2014 between the existing Pixel Detector and a new smaller radius beam-pipe at a radius of 3.3 cm. To cope with the high radiation and pixel occupancy due to the proximity to the interaction point, a new read-out chip and two different silicon sensor technologies (planar and 3D) have been developed. Furthermore, the physics performance will be improved through the reduction of pixel size while, targeting for a low material budget, a new mechanical support using lightweight staves and a CO2 based cooling system have been adopted. IBL construction is now completed. An overview of the IBL project as well as the ...

  12. The Pixel Detector of the ATLAS experiment for the Run 2 at the Large Hadron Collider

    CERN Document Server

    Oide, H; The ATLAS collaboration

    2014-01-01

    The Pixel Detector of the ATLAS experiment has shown excellent performance during the whole Run 1 of LHC. Taking advantage of the long shutdown, the detector was extracted from the experiment and brought to surface, to equip it with new service quarter panels, to repair modules and to ease installation of the Insertable B-Layer (IBL). The IBL is the fourth layer of the Run 2 Pixel Detector, and it was installed in May 2014 between the existing Pixel Detector and the new smaller-radius beam pipe at a radius of 3.3 cm. To cope with the high radiation and pixel occupancy due to the proximity to the interaction point, a new read-out chip and two different silicon sensor technologies (planar and 3D) have been developed. Furthermore, the physics performance will be improved through the reduction of pixel size while, targeting for a low material budget, a new mechanical support using lightweight staves and a CO2 based cooling system have been adopted. IBL construction is now completed. An overview of the IBL project...

  13. The Pixel Detector of the ATLAS experiment for the Run2 at the Large Hadron Collider

    CERN Document Server

    Mandelli, B; The ATLAS collaboration

    2014-01-01

    The Pixel Detector of the ATLAS experiment has shown excellent performance during the whole Run-1 of LHC. Taking advantage of the long shutdown, the detector was extracted from the experiment and brought to surface, to equip it with new service quarter panels, to repair modules and to ease installation of the Insertable B-Layer (IBL). IBL is a fourth layer of pixel detectors, and will be installed in May 2014 between the existing Pixel Detector and a new smaller radius beam-pipe at a radius of 3.3 cm. To cope with the high radiation and pixel occupancy due to the proximity to the interaction point, a new read-out chip and two different silicon sensor technologies (planar and 3D) have been developed. Furthermore, the physics performance will be improved through the reduction of pixel size while, targeting for a low material budget, a new mechanical support using lightweight staves and a CO2 based cooling system have been adopted. IBL construction is now completed. An overview of the IBL project as well as the ...

  14. The Pixel Detector of the ATLAS Experiment for LHC Run-2

    CERN Document Server

    Pernegger, Heinz; The ATLAS collaboration

    2015-01-01

    The Pixel Detector of the ATLAS experiment has shown excellent performance during the whole Run-1 of LHC. Taking advantage of the long shutdown, the detector was extracted from the experiment and brought to surface, to equip it with new service quarter panels, to repair modules and to ease installation of the Insertable B-Layer (IBL). IBL is a fourth layer of pixel detectors, and has been installed in May 2014 between the existing Pixel Detector and a new smaller radius beam-pipe at a radius of 3.3 cm. To cope with the high radiation and hit occupancy due to the proximity to the interaction point, a new read-out chip and two different silicon sensor technologies (planar and 3D) have been developed. Furthermore, the physics performance will be improved through the reduction of pixel size while, targeting for a low material budget, a new mechanical support using lightweight staves and a CO2 based cooling system have been adopted. An overview of the refurbishing of the Pixel Detector and of the IBL project as we...

  15. The upgraded Pixel Detector of the ATLAS Experiment for Run2 at the Large Hadron Collider

    CERN Document Server

    Mullier, Geoffrey Andre; The ATLAS collaboration

    2015-01-01

    The Pixel Detector of the ATLAS experiment has shown excellent performance during the whole Run-1 of LHC. Taking advantage of the long showdown, the detector was extracted from the experiment and brought to surface, to equip it with new service quarter panels, to repair modules and to ease installation of the Insertable B-Layer (IBL), a fourth layer of pixel detectors, installed in May 2014 between the existing Pixel Detector and a new smaller radius beam-pipe at a radius of 3.3 cm. To cope with the high radiation and increased pixel occupancy due to the proximity to the interaction point, two different silicon sensor technologies (planar and 3D) have been developed. A new readout chip has been developed within CMOS 130nm technology with larger area, smaller pixel size and faster readout capability. Dedicated design features in combination with a new composite material were considered and used in order to reduce the material budget of the support structure while keeping the optimal thermo-mechanical performan...

  16. Monolithic pixel development in TowerJazz 180 nm CMOS for the outer pixel layers in the ATLAS experiment

    Science.gov (United States)

    Berdalovic, I.; Bates, R.; Buttar, C.; Cardella, R.; Egidos Plaja, N.; Hemperek, T.; Hiti, B.; van Hoorne, J. W.; Kugathasan, T.; Mandic, I.; Maneuski, D.; Marin Tobon, C. A.; Moustakas, K.; Musa, L.; Pernegger, H.; Riedler, P.; Riegel, C.; Schaefer, D.; Schioppa, E. J.; Sharma, A.; Snoeys, W.; Solans Sanchez, C.; Wang, T.; Wermes, N.

    2018-01-01

    The upgrade of the ATLAS tracking detector (ITk) for the High-Luminosity Large Hadron Collider at CERN requires the development of novel radiation hard silicon sensor technologies. Latest developments in CMOS sensor processing offer the possibility of combining high-resistivity substrates with on-chip high-voltage biasing to achieve a large depleted active sensor volume. We have characterised depleted monolithic active pixel sensors (DMAPS), which were produced in a novel modified imaging process implemented in the TowerJazz 180 nm CMOS process in the framework of the monolithic sensor development for the ALICE experiment. Sensors fabricated in this modified process feature full depletion of the sensitive layer, a sensor capacitance of only a few fF and radiation tolerance up to 1015 neq/cm2. This paper summarises the measurements of charge collection properties in beam tests and in the laboratory using radioactive sources and edge TCT. The results of these measurements show significantly improved radiation hardness obtained for sensors manufactured using the modified process. This has opened the way to the design of two large scale demonstrators for the ATLAS ITk. To achieve a design compatible with the requirements of the outer pixel layers of the tracker, a charge sensitive front-end taking 500 nA from a 1.8 V supply is combined with a fast digital readout architecture. The low-power front-end with a 25 ns time resolution exploits the low sensor capacitance to reduce noise and analogue power, while the implemented readout architectures minimise power by reducing the digital activity.

  17. Pixel detector modules performance for ATLAS IBL and future pixel detectors

    CERN Document Server

    AUTHOR|(INSPIRE)INSPIRE-00355104; Pernegger, Heinz

    2015-11-06

    The ATLAS Detector is one of the four big particle physics experiments at CERN’s LHC. Its innermost tracking system consisted of the 3-Layer silicon Pixel Detector (~80M readout channels) in the first run (2010-2012). Over the past two years it was refurbished and equipped with new services as well as a new beam monitor. The major upgrade, however, was the Insertable B-Layer (IBL). It adds ~12M readout channels for improved vertexing, tracking robustness and b-tagging performance for the upcoming runs, before the high luminosity upgrade of the LHC will take place. This thesis covers two main aspects of Pixel detector performance studies: The main work was the planning, commissioning and operation of a test bench that meets the requirements of current pixel detector components. Each newly built ATLAS IBL stave was thoroughly tested, following a specifically developed procedure, and initially calibrated in that setup. A variety of production accompanying measurements as well as preliminary results after integ...

  18. Radiation-hard ASICs for optical data transmission in the ATLAS pixel detector

    CERN Document Server

    Ziolkowski, M; Buchholz, P; Ciliox, A; Gan, K K; Holder, M; Johnson, M; Kagan, H; Kass, R; Nderitu, S; Rahimi, A; Rush, C J; Smith, S; Ter-Antonian, R; Zoeller, M M

    2004-01-01

    We have developed two radiation-hard ASICs for optical data transmission in the ATLAS pixel detector at the CERN Large Hadron Collider (LHC). The first circuit is a driver chip for a Vertical Cavity Surface Emitting Laser (VCSEL) diode to be used for 80 Mbit/s data transmission from the detector. The second circuit is a Bi-Phase Mark, decoder chip to recover the control data and 40 MHz clock received optically by a PIN diode on the detector side. During ten years of operation at the LHC, the ATLAS optical link circuitry will be exposed to a maximum total fluence of 10/sup 15/ 1-MeV-equivalent neutrons per cm/sup 2/. We have successfully implemented both ASICs in a commercial 0.25 mu m CMOS technology using standard layout techniques to enhance the radiation tolerance. Both chips are four- channel devices compatible with common cathode PIN and VCSEL arrays. We present results from final prototype circuits and from irradiation studies of both circuits with 24 GeV protons up to a total dose of 57 Mrad. (3 refs).

  19. Towards a new generation of pixel detector readout chips

    CERN Document Server

    Campbell, M; Ballabriga, R.; Frojdh, E.; Heijne, E.; Llopart, X.; Poikela, T.; Tlustos, L.; Valerio, P.; Wong, W.

    2016-01-01

    The Medipix3 Collaboration has broken new ground in spectroscopic X-ray imaging and in single particle detection and tracking. This paper will review briefly the performance and limitations of the present generation of pixel detector readout chips developed by the Collaboration. Through Silicon Via technology has the potential to provide a significant improvement in the tile- ability and more flexibility in the choice of readout architecture. This has been explored in the context of 3 projects with CEA-LETI using Medipix3 and Timepix3 wafers. The next generation of chips will aim to provide improved spectroscopic imaging performance at rates compatible with human CT. It will also aim to provide full spectroscopic images with unprecedented energy and spatial resolution. Some of the opportunities and challenges posed by moving to a more dense CMOS process will be discussed.

  20. Modeling radiation damage to pixel sensors in the ATLAS detector

    CERN Document Server

    Ducourthial, Audrey; The ATLAS collaboration

    2017-01-01

    Silicon pixel detectors are at the core of the current and planned upgrade of the ATLAS detector at the Large Hadron Collider (LHC). As the closest detector component to the interaction point, these detectors will be subjected to a significant amount of radiation over their lifetime: prior to the High-Luminosity LHC (HL-LHC), the innermost layers will receive a fluence in excess of $10^{15}n_{eq}/cm^2$ and the HL-HLC detector upgrades must cope with an order of magnitude higher fluence integrated over their lifetimes. Simulating radiation damage is critical in order to make accurate predictions for current future detector performance that will enable searches for new particles and forces as well as precision measurements of Standard Model particles such as the Higgs boson. We present a digitization model that includes radiation damage effects to the ATLAS pixel sensors for the first time. In addition to thoroughly describing the setup, we present first predictions for basic pixel cluster properties alongside ...

  1. Modeling Radiation Damage to Pixel Sensors in the ATLAS Detector

    CERN Document Server

    Ducourthial, Audrey; The ATLAS collaboration

    2017-01-01

    Silicon pixel detectors are at the core of the current and planned upgrade of the ATLAS detector at the Large Hadron Collider (LHC). As the closest detector component to the interaction point, these detectors will be subjected to a significant amount of radiation over their lifetime: prior to the High-Luminosity LHC (HL-LHC), the innermost layers will receive a fluence in excess of $10^{15} n_{eq}/cm^2$ and the HL-HLC detector upgrades must cope with an order of magnitude higher fluence integrated over their lifetimes. Simulating radiation damage is critical in order to make accurate predictions for current future detector performance that will enable searches for new particles and forces as well as precision measurements of Standard Model particles such as the Higgs boson. We present a digitization model that includes radiation damage effects to the ATLAS pixel sensors for the first time. In addition to thoroughly describing the setup, we present first predictions for basic pixel cluster properties alongside...

  2. Status of the ATLAS Pixel Detector at the LHC and its performance after three years of operation.

    CERN Document Server

    Lantzsch, K; The ATLAS collaboration

    2013-01-01

    The ATLAS Pixel Detector is the innermost detector of the ATLAS experiment at the Large Hadron Collider at CERN. The detector provides hermetic coverage with three cylindrical layers and three layers of forward and backward pixel detectors. It consists of approximately 80 million pixels that are individually read out via chips bump-bonded to 1744 n-in-n silicon substrates. In this talk, results from the successful operation of the Pixel Detector at the LHC and its status after three years of operation will be presented, including monitoring, calibration procedures, timing optimization and detector performance. The record breaking instantaneous luminosities of 7.7 x 10^33 cm-2 s-1 recently surpassed at the Large Hadron Collider generate a rapidly increasing particle fluence in the ATLAS Pixel Detector. As the radiation dose accumulates, the first effects of radiation damage are now observable in the silicon sensors. A regular monitoring program has been conducted and reveals an increase in the silicon leakage ...

  3. Development of a Micro Pixel Chamber for the ATLAS Upgrade

    CERN Document Server

    Ochi, Atsuhiko; Komai, Hidetoshi; Edo, Yuki; Yamaguchi, Takahiro

    2012-01-01

    The Micro Pixel Chamber (μ-PIC) is being developed a sacandidate for the muon system of the ATLAS detector for upgrading in LHC experiments. The μ-PIC is a micro-pattern gaseous detector that doesn’t have floating structure such as wires, mesh, or foil. This detector can be made by printed-circuit-board (PCB) technology, which is commercially available and suited for mass production. Operation tests have been performed under high flux neutrons under similar conditions to the ATLAS cavern. Spark rates are measured using several gas mixtures under 7 MeV neutron irradiation, and good properties were observed using neon, ethane, and CF4 mixture of gases.Using resistive materials as electrodes, we are also developing a new μ-PIC, which is not expected to damage the electrodes in the case of discharge sparks.

  4. ATLAS Phase-II Upgrade Pixel Data Transmission Development

    CERN Document Server

    Nielsen, Jason; The ATLAS collaboration

    2017-01-01

    The current tracking system of the ATLAS experiment will be replaced by an all-silicon detector (ITk) in the course of the planned HL-LHC accelerator upgrade around 2025. The readout of the ITk pixel system will be most challenging in terms of data rate and readout speed. Simulation of the on-detector electronics indicates that the planned trigger rate of 1 MHz will require readout speeds up to 5.12 Gb/s per data link. The high-radiation environment precludes optical data transmission, so the first part of the data transmission has to be implemented electrically, over a 6-m distance between the pixel modules and the optical transceivers. Several high-speed electrical data transmission solutions involving small-gauge wire cables or flexible circuits have been prototyped and characterized. A combination of carefully-selected physical layers and aggressive signal conditioning are required to achieve the proposed specifications.

  5. ATLAS Phase-II Upgrade Pixel Data Transmission Development

    CERN Document Server

    Nielsen, Jason; The ATLAS collaboration

    2017-01-01

    The ATLAS tracking system will be replaced by an all-silicon detector (ITk) in the course of the planned HL-LHC accelerator upgrade around 2025. The readout of the ITk pixel system will be most challenging in terms of data rate and readout speed. Simulation of the on-detector electronics based on the currently foreseen trigger rate of 1 MHz indicate that a readout speed of up to 5 Gbps per data link is necessary. Due to radiation levels, the first part of transmission has to be implemented electrically. System simulation and test results of cable candidates will be presented.

  6. Transfer Function and Fluorescence Measurements on New CMOS Pixel Sensor for ATLAS

    CERN Document Server

    Kaemingk, Michael

    2017-01-01

    A new generation of pixel sensors is being designed for the phase II upgrade of the ATLAS Inner Tracker (ITk). These pixel sensors are being tested to ensure that they meet the demands of the ATLAS detector. As a summer student, I was involved in some of the measurements taken for this purpose.

  7. Pixel-Cluster Counting Luminosity Measurement In ATLAS

    CERN Document Server

    AUTHOR|(SzGeCERN)782710; The ATLAS collaboration

    2016-01-01

    A precision measurement of the delivered luminosity is a key component of the ATLAS physics program at the Large Hadron Collider (LHC). A fundamental ingredient of the strategy to control the systematic uncertainties affecting the absolute luminosity has been to compare the measure- ments of several luminometers, most of which use more than one counting technique. The level of consistency across the various methods provides valuable cross-checks as well as an estimate of the detector-related systematic uncertainties. This poster describes the development of a luminosity algorithm based on pixel-cluster counting in the recently installed ATLAS inner b-layer (IBL), using data recorded during the 2015 pp run at the LHC. The noise and background contamination of the luminosity-associated cluster count is minimized by a multi-component fit to the measured cluster-size distribution in the forward pixel modules of the IBL. The linearity, long-term stability and statistical precision of the cluster- counting method a...

  8. Modeling Radiation Damage to Pixel Sensors in the ATLAS Detector

    CERN Document Server

    Rossini, Lorenzo; The ATLAS collaboration

    2018-01-01

    Silicon pixel detectors are at the core of the current and planned upgrade of the ATLAS detector at the Large Hadron Collider (LHC). As the closest detector component to the interaction point, these detectors will be subjected to a significant amount of radiation over their lifetime: prior to the High-Luminosity LHC (HL-LHC), the innermost layers will receive a fluence in excess of 10^15 neq/cm^2 and the HL-HLC detector upgrades must cope with an order of magnitude higher fluence integrated over their lifetimes. Simulating radiation damage is critical in order to make accurate predictions for current and future detector performance that will enable searches for new particles and forces as well as precision measurements of Standard Model particles such as the Higgs boson. We present a digitization model that includes radiation damage effects to the ATLAS pixel sensors for the first time and considers both planar and 3D sensor designs. In addition to thoroughly describing the setup, we compare predictions for b...

  9. Pixel-Cluster Counting Luminosity Measurement in ATLAS

    CERN Document Server

    McCormack, William Patrick; The ATLAS collaboration

    2016-01-01

    A precision measurement of the delivered luminosity is a key component of the ATLAS physics program at the Large Hadron Collider (LHC). A fundamental ingredient of the strategy to control the systematic uncertainties affecting the absolute luminosity has been to compare the measurements of several luminometers, most of which use more than one counting technique. The level of consistency across the various methods provides valuable cross-checks as well as an estimate of the detector-related systematic uncertainties. This poster describes the development of a luminosity algorithm based on pixel-cluster counting in the recently installed ATLAS inner b-layer (IBL), using data recorded during the 2015 pp run at the LHC. The noise and background contamination of the luminosity-associated cluster count is minimized by a multi-component fit to the measured cluster-size distribution in the forward pixel modules of the IBL. The linearity, long-term stability and statistical precision of the cluster-counting method are ...

  10. Results from the commissioning of the ATLAS Pixel detector

    CERN Document Server

    Biesiada, J

    2010-01-01

    The ATLAS Pixel detector is a high-resolution, low-noise silicon-based device designed to provide tracking and vertexing information within a distance of 12 cm from the LHC beam axis. It consists of approximately 80 million pixel channels with radiation-hard front-end electronics connected through optical fibers to a custom-controlled DAQ system away from the detector. Following the successful installation of the detector in June 2007, an intense commissioning period was conducted in the year 2008 and more than 400,000 cosmic-ray tracks were recorded in conjunction with other ATLAS sub-detectors. By the end of the year, 96% of the detector was tuned, calibrated, and taking data at 99.8% tracking hit efficiency and with noise occupancy at the 10^-10 level. We present here the results of the commissioning, calibration, and data-taking as well as the outlook for future performance with LHC collision-based data.

  11. Radiation induced effects in the \\\\ATLAS Insertable B-Layer readout chip

    CERN Document Server

    The ATLAS collaboration

    2017-01-01

    The ATLAS Insertable B-Layer is the innermost pixel barrel layer of the ATLAS detector installed in 2014. During the first year of $pp$ collisions at $\\sqrt{s} = 13~{\\rm TeV}$ in 2015, an unusual increase was observed in the low voltage currents of the readout chips. This increase was found to be due to radiation damage to the chips. The dependence of the current on the total ionising dose and temperature has been studied using X-ray and proton beam sources, and will be presented in this note together with its possible parametrisation and operation guidelines for the detector.

  12. Characterization and Performance of Silicon n-in-p Pixel Detectors for the ATLAS Upgrades

    CERN Document Server

    Weigell, Philipp; Gallrapp, Christian; La Rosa, Alessandro; Macchiolo, Anna; Nisius, Richard; Pernegger, Heinz; Richter, Rainer

    2011-01-01

    The existing ATLAS Tracker will be at its functional limit for particle fluences of 10^15 neq/cm^2 (LHC). Thus for the upgrades at smaller radii like in the case of the planned Insertable B-Layer (IBL) and for increased LHC luminosities (super LHC) the development of new structures and materials which can cope with the resulting particle fluences is needed. N-in-p silicon devices are a promising candidate for tracking detectors to achieve these goals, since they are radiation hard, cost efficient and are not type inverted after irradiation. A n-in-p pixel production based on a MPP/HLL design and performed by CiS (Erfurt, Germany) on 300 \\mu m thick Float-Zone material is characterised and the electrical properties of sensors and single chip modules (SCM) are presented, including noise, charge collection efficiencies, and measurements with MIPs as well as an 241Am source. The SCMs are built with sensors connected to the current the ATLAS read-out chip FE-I3. The characterisation has been performed with the ATL...

  13. Serial powering optimization for CMS and ATLAS pixel detectors within RD53 collaboration for HL-LHC: System Level Simulations and Testing

    CERN Document Server

    Orfanelli, Stella; Hamer, Matthias; Hinterkeuser, F; Karagounis, M; Pradas Luengo, Alvaro; Marconi, Sara; Ruini, Daniele

    2017-01-01

    Serial powering is the baseline choice for low mass power distribution for the CMS and ATLAS HL-LHC pixel detectors. For this scheme, two 2.0\\,A Shunt-LDO (SLDO) regulators are integrated in the RD53 prototype chip (65\\,nm) and are used to provide constant supply voltages to its power domains from a constant input current. System level simulation studies will be presented, in which a detailed regulator design in a serially powered topology is used to evaluate and optimize system parameters for different operational scenarios of HL-LHC pixel detectors. Performance results from testing prototype SLDO chips will be shown, including x-ray irradiation.

  14. ATLAS Pixel Detector Design For HL-LHC

    CERN Document Server

    Smart, Ben; The ATLAS collaboration

    2016-01-01

    The ATLAS Inner Detector will be replaced for the High-Luminosity LHC (HL-LHC) running in 2026. The new Inner Detector will be called the Inner Tracker (ITk). The ITk will cover an extended eta-range: at least to |eta|<3.2, and likely up to |eta|<4.0. The ITk will be an all-Silicon based detector, consisting of a Silicon strip detector outside of a radius of 362mm, and a Silicon pixel detector inside of this radius. Several novel designs are being considered for the ITk pixel detector, to cope with high-eta charged particle tracks. These designs are grouped into 'extended' and 'inclined' design-types. Extended designs have long pixel staves with sensors parallel to the beamline. High-eta particles will therefore hit these sensors at shallow angles, leaving elongated charge clusters. The length of such a charge cluster can be used to estimate the angle of the passing particle. This information can then be used in track reconstruction to improve tracking efficiency and reduce fake rates. Inclined designs ...

  15. ATLAS Pixel Detector Design For HL-LHC

    CERN Document Server

    AUTHOR|(INSPIRE)INSPIRE-00237541; The ATLAS collaboration

    2016-01-01

    The ATLAS Inner Detector will be replaced for the High-Luminosity LHC (HL-LHC) running in 2026. The new Inner Detector will be called the Inner Tracker (ITk). The ITk will cover an extended eta-range: at least to |eta|<3.2, and likely up to |eta|<4.0. The ITk will be an all-Silicon based detector, consisting of a Silicon strip detector outside of a radius of 362 mm, and a Silicon pixel detector inside of this radius. Several novel designs are being considered for the ITk pixel detector, to cope with high-eta charged particle tracks. These designs are grouped into 'extended' and 'inclined' design-types. Extended designs have long pixel staves with sensors parallel to the beamline, while inclined designs have sensors angled such that they point towards the interaction point. The relative advantages and challenges of these two classes of designs will be examined in this paper, along with the mechanical solutions being considered. Thermal management, radiation-length mapping, and electrical services will al...

  16. A counting pixel chip and sensor system for X-ray imaging

    Energy Technology Data Exchange (ETDEWEB)

    Fischer, P.; Hausmann, J.; Helmich, A.; Lindner, M.; Wermes, N. [Universitaet Bonn (Germany). Physikalisches Institut; Blanquart, L. [CNRS, Marseille (France). Centre de Physique des Particules

    1999-08-01

    Results obtained with a (photon) counting pixel imaging chip connected to a silicon pixel sensor using the bump and flip-chip technology are presented. The performance of the chip electronics is characterized by an average equivalent noise charge (ENC) below 135 e and a threshold spread of less than 35 e after individual threshold adjust, both measured with a sensor attached. First results on the imaging performance are also reported.

  17. Prototype ATLAS IBL Modules using the FE-I4A Front-End Readout Chip

    CERN Document Server

    Albert, J; Alimonti, Gianluca; Allport, Phil; Altenheiner, Silke; Ancu, Lucian; Andreazza, Attilio; Arguin, Jean-Francois; Arutinov, David; Backhaus, Malte; Bagolini, Alvise; Ballansat, Jacques; Barbero, Marlon; Barbier, Gérard; Bates, Richard; Battistin, Michele; Baudin, Patrick; Beau, Tristan; Beccherle, Roberto; Beck, Hans Peter; Benoit, Mathieu; Bensinger, Jim; Bomben, Marco; Borri, Marcello; Boscardin, Maurizio; Botelho Direito, Jose Antonio; Bousson, Nicolas; Boyd, George Russell Jr; Breugnon, Patrick; Bruni, Graziano; Bruschi, Marco; Buchholz, Peter; Buttar, Craig; Cadoux, Franck; Calderini, Giovanni; Caminada, Leah; Capeans, Mar; Casse, Gianluigi; Catinaccio, Andrea; Cavalli-Sforza, Matteo; Chauveau, Jacques; Chu, Ming-Lee; Ciapetti, Marco; Cindro, Vladimir; Citterio, Mauro; Clark, Allan; Cobal, Marina; Coelli, Simone; Colijn, Auke-Pieter; Colin, Daly; Collot, Johann; Crespo-Lopez, Olivier; Dalla Betta, Gian-Franco; Darbo, Giovanni; DaVia, Cinzia; David, Pierre-Yves; Debieux, Stéphane; Delebecque, Pierre; Devetak, Erik; DeWilde, Burton; Di Girolamo, Beniamino; Dinu, Nicoleta; Dittus, Fridolin; Diyakov, Denis; Djama, Fares; Dobos, Daniel Adam; Doonan, Kate; Dopke, Jens; Dorholt, Ole; Dube, Sourabh; Dushkin, Andrey; Dzahini, Daniel; Egorov, Kirill; Ehrmann, Oswin; Elldge, David; Elles, Sabine; Elsing, Markus; Eraud, Ludovic; Ereditato, Antonio; Eyring, Andreas; Falchieri, Davide; Falou, Aboud; Fang, Xiaochao; Fausten, Camille; Favre, Yannick; Ferrere, Didier; Fleta, Celeste; Fleury, Julien; Flick, Tobias; Forshaw, Dean; Fougeron, Denis; Fritzsch, Thomas; Gabrielli, Alessandro; Gaglione, Renaud; Gallrapp, Christian; Gan, K; Garcia-Sciveres, Maurice; Gariano, Giuseppe; Gastaldi, Thibaut; Gemme, Claudia; Gensolen, Fabrice; George, Matthias; Ghislain, Patrick; Giacomini, Gabriele; Gibson, Stephen; Giordani, Mario Paolo; Giugni, Danilo; Gjersdal, Håvard; Glitza, Karl Walter; Gnani, Dario; Godlewski, Jan; Gonella, Laura; Gorelov, Igor; Gorišek, Andrej; Gössling, Claus; Grancagnolo, Sergio; Gray, Heather; Gregor, Ingrid-Maria; Grenier, Philippe; Grinstein, Sebastian; Gromov, Vladimir; Grondin, Denis; Grosse-Knetter, Jörn; Hansen, Thor-Erik; Hansson, Per; Harb, Ali; Hartman, Neal; Hasi, Jasmine; Hegner, Franziska; Heim, Timon; Heinemann, Beate; Hemperek, Tomasz; Hessey, Nigel; Hetmánek, Martin; Hoeferkamp, Martin; Hostachy, Jean-Yves; Hügging, Fabian; Husi, Coralie; Iacobucci, Giuseppe; Idarraga, John; Ikegami, Yoichi; Janoška, Zdenko; Jansen, Jens; Jansen, Luc; Jensen, Frank; Jentzsch, Jennifer; Joseph, John; Kagan, Harris; Karagounis, Michael; Kass, Richard; Kenney, Christopher J; Kersten, Susanne; Kind, Peter; Klingenberg, Reiner; Kluit, Ruud; Kocian, Martin; Koffeman, Els; Kok, Angela; Korchak, Oleksandr; Korolkov, Ilya; Kostyukhin, Vadim; Krieger, Nina; Krüger, Hans; Kruth, Andre; Kugel, Andreas; Kuykendall, William; La Rosa, Alessandro; Lai, Chung-Hang; Lantzsch, Kerstin; Laporte, Didier; Lapsien, Tobias; Lounis, abdenour; Lozano, Manuel; Lu, Yunpeng; Lubatti, Henry; Macchiolo, Anna; Mallik, Usha; Mandić, Igor; Marchand, Denis; Marchiori, Giovanni; Massol, Nicolas; Matthias, Wittgen; Mättig, Peter; Mekkaoui, Abderrazak; Menouni, Mohsine; Menu, Johann; Meroni, Chiara; Mesa, Javier; Micelli, Andrea; Michal, Sébastien; Miglioranzi, Silvia; Mikuž, Marko; Mitsui, Shingo; Monti, Mauro; Moore, J; Morettini, Paolo; Muenstermann, Daniel; Murray, Peyton; Nellist, Clara; Nelson, David J; Nessi, Marzio; Neumann, Manuel; Nisius, Richard; Nordberg, Markus; Nuiry, Francois-Xavier; Oppermann, Hermann; Oriunno, Marco; Padilla, Cristobal; Parker, Sherwood; Pellegrini, Giulio; Pelleriti, Gabriel; Pernegger, Heinz; Piacquadio, Nicola Giacinto; Picazio, Attilio; Pohl, David; Polini, Alessandro; Popule, Jiří; Portell Bueso, Xavier; Povoli, Marco; Puldon, David; Pylypchenko, Yuriy; Quadt, Arnulf; Quirion, David; Ragusa, Francesco; Rambure, Thibaut; Richards, Erik; Ristic, Branislav; Røhne, Ole; Rothermund, Mario; Rovani, Alessandro; Rozanov, Alexandre; Rubinskiy, Igor; Rudolph, Matthew Scott; Rummler, André; Ruscino, Ettore; Salek, David; Salzburger, Andreas; Sandaker, Heidi; Schipper, Jan-David; Schneider, Basil; Schorlemmer, Andre; Schroer, Nicolai; Schwemling, Philippe; Seidel, Sally; Seiden, Abraham; Šícho, Petr; Skubic, Patrick; Sloboda, Michal; Smith, D; Sood, Alex; Spencer, Edwin; Strang, Michael; Stugu, Bjarne; Stupak, John; Su, Dong; Takubo, Yosuke; Tassan, Jean; Teng, Ping-Kun; Terada, Susumu; Todorov, Theodore; Tomášek, Michal; Toms, Konstantin; Travaglini, Riccardo; Trischuk, William; Troncon, Clara; Troska, Georg; Tsiskaridze, Shota; Tsurin, Ilya; Tsybychev, Dmitri; Unno, Yoshinobu; Vacavant, Laurent; Verlaat, Bart; Vianello, Elisa; Vigeolas, Eric; von Kleist, Stephan; Vrba, Václav; Vuillermet, Raphaël; Wang, Rui; Watts, Stephen; Weber, Michele; Weber, Marteen; Weigell, Philipp; Weingarten, Jens; Welch, Steven David; Wenig, Siegfried; Wermes, Norbert; Wiese, Andreas; Wittig, Tobias; Yildizkaya, Tamer; Zeitnitz, Christian; Ziolkowski, Michal; Zivkovic, Vladimir; Zoccoli, Antonio; Zorzi, Nicola; Zwalinski, Lukasz

    2012-01-01

    The ATLAS Collaboration will upgrade its semiconductor pixel tracking detector with a new Insertable B-layer (IBL) between the existing pixel detector and the vacuum pipe of the Large Hadron Collider. The extreme operating conditions at this location have necessitated the development of new radiation hard pixel sensor technologies and a new front-end readout chip, called the FE-I4. Planar pixel sensors and 3D pixel sensors have been investigated to equip this new pixel layer, and prototype modules using the FE-I4A have been fabricated and characterized using 120 GeV pions at the CERN SPS and 4 GeV positrons at DESY, before and after module irradiation. Beam test results are presented, including charge collection efficiency, tracking efficiency and charge sharing.

  18. Development and characterization of diamond and 3D-silicon pixel detectors with ATLAS-pixel readout electronics

    Energy Technology Data Exchange (ETDEWEB)

    Mathes, Markus

    2008-12-15

    Hybrid pixel detectors are used for particle tracking in the innermost layers of current high energy experiments like ATLAS. After the proposed luminosity upgrade of the LHC, they will have to survive very high radiation fluences of up to 10{sup 16} particles per cm{sup 2} per life time. New sensor concepts and materials are required, which promise to be more radiation tolerant than the currently used planar silicon sensors. Most prominent candidates are so-called 3D-silicon and single crystal or poly-crystalline diamond sensors. Using the ATLAS pixel electronics different detector prototypes with a pixel geometry of 400 x 50 {mu}m{sup 2} have been built. In particular three devices have been studied in detail: a 3D-silicon and a single crystal diamond detector with an active area of about 1 cm{sup 2} and a poly-crystalline diamond detector of the same size as a current ATLAS pixel detector module (2 x 6 cm{sup 2}). To characterize the devices regarding their particle detection efficiency and spatial resolution, the charge collection inside a pixel cell as well as the charge sharing between adjacent pixels was studied using a high energy particle beam. (orig.)

  19. Thin n-in-p planar pixel sensors and active edge sensors for the ATLAS upgrade at HL-LHC

    CERN Document Server

    Terzo, Stefano; Nisius, R.; Paschen, B.

    2014-01-01

    Silicon pixel modules employing n-in-p planar sensors with an active thickness of 200 $\\mu$m, produced at CiS, and 100-200 $\\mu$m thin active/slim edge sensor devices, produced at VTT in Finland have been interconnected to ATLAS FE-I3 and FE-I4 read-out chips. The thin sensors are designed for high energy physics collider experiments to ensure radiation hardness at high fluences. Moreover, the active edge technology of the VTT production maximizes the sensitive region of the assembly, allowing for a reduced overlap of the modules in the pixel layer close to the beam pipe. The CiS production includes also four chip sensors according to the module geometry planned for the outer layers of the upgraded ATLAS pixel detector to be operated at the HL-LHC. The modules have been characterized using radioactive sources in the laboratory and with high precision measurements at beam tests to investigate the hit efficiency and charge collection properties at different bias voltages and particle incidence angles. The perfo...

  20. The Pixel Detector of the ATLAS experiment for the Run2 at the Large Hadron Collider -- Plot Approval (Pixel, IBL) : This is a submission of plot approval request for Pixel+IBL, facing on a talk at ICHEP 2014 conference

    CERN Document Server

    Mandelli, B; The ATLAS collaboration

    2014-01-01

    The Pixel Detector of the ATLAS experiment has shown excellent performance during the whole Run-1 of LHC. Taking advantage of the long showdown, the detector was extracted from the experiment and brought to surface, to equip it with new service quarter panels, to repair modules and to ease installation of the Insertable B-Layer (IBL). IBL is a fourth layer of pixel detectors, and will be installed in May 2014 between the existing Pixel Detector and a new smaller radius beam-pipe at a radius of 3.3 cm. To cope with the high radiation and pixel occupancy due to the proximity to the interaction point, a new read-out chip and two different silicon sensor technologies (planar and 3D) have been developed. Furthermore, the physics performance will be improved through the reduction of pixel size while, targeting for a low material budget, a new mechanical support using lightweight staves and a CO2 based cooling system have been adopted. IBL construction is now completed. An overview of the IBL project as well as the ...

  1. The Phase II ATLAS Pixel Upgrade: The Inner Tracker (ITk)

    CERN Document Server

    Flick, Tobias; The ATLAS collaboration

    2016-01-01

    The entire tracking system of the ATLAS experiment will be replaced during the LHC Phase II shutdown (foreseen to take place around 2025) by an all-silicon detector called the ITk (Inner Tracker). The pixel detector will comprise the five innermost layers, and will be instrumented with new sensor and readout electronics technologies to improve the tracking performance and cope with the HL-LHC environment, which will be severe in terms of occupancy and radiation. The total surface area of silicon in the new pixel system could measure up to 14 m^2, depending on the final layout choice, which is expected to take place in early 2017. Four layout options are being investigated at the moment, two with forward coverage to eta < 3.2 and two to eta < 4. For each coverage option, a layout with long barrel staves and a layout with novel inclined support structures in the barrel-endcap overlap region are considered. All potential layouts include modules mounted on ring-shaped supports in the endcap regions. Support...

  2. The Phase-II ATLAS ITk Pixel Upgrade

    CERN Document Server

    AUTHOR|(INSPIRE)INSPIRE-00349918; The ATLAS collaboration

    2017-01-01

    The entire tracking system of the ATLAS experiment will be replaced during the LHC Phase~2 shutdown (foreseen to take place around 2025) by an all-silicon detector called the ``ITk'' (Inner Tracker). The innermost portion of ITk will consist of a pixel detector with five layers in the barrel region and ring-shaped supports in the end-cap regions. It will be instrumented with new sensor and readout electronics technologies to improve the tracking performance and cope with the HL-LHC environment, which will be severe in terms of occupancy and radiation levels. The new pixel system could include up to 14 $\\mathrm{m^2}$ of silicon, depending on the final layout, which is expected to be decided in 2017. Several layout options are being investigated at the moment, including some with novel inclined support structures in the barrel end-cap overlap region and others with very long innermost barrel layers. Forward coverage could be as high as |eta| $<4$. Supporting structures will be based on low mass, highly stabl...

  3. ATLAS Pixel-Optoboard Production and Simulation Studies

    CERN Document Server

    Nderitu, Simon

    At CERN, a Large collider will collide protons at high energies. There are four experiments being built to study the particle properties from the collision. The ATLAS experiment is the largest. It has many sub detectors among which is the Pixel detector which is the innermost part. The Pixel detector has eighty million channels that have to be read out. An optical link is utilized for the read out. It has optical to electronic interfaces both on the detector and off the detector at the counting room. The component on the detector in called the opto-board. This work discusses the production testing of the opto-boards to be installed on the detector. A total of 300 opto-boards including spares have been produced. The production was done in three laboratories among which is the laboratory at the University of Wuppertal which had the responsibility of Post production testing of all the one third of the total opto-boards. The results are discussed in this work. The analysis of the results from the total productio...

  4. Active Pixel Sensors in ams H18/H35 HV-CMOS Technology for the ATLAS HL-LHC Upgrade

    CERN Document Server

    Ristic, Branislav

    2016-09-21

    Deep sub micron HV-CMOS processes offer the opportunity for sensors built by industry standard techniques while being HV tolerant, making them good candidates for drift-based, fast collecting, thus radiation-hard pixel detectors. For the upgrade of the ATLAS Pixel Detector towards the HL-LHC requirements, active pixel sensors in HV-CMOS technology were investigated. These implement amplifier and discriminator stages directly in insulating deep n-wells, which also act as collecting electrodes. The deep n-wells allow for bias voltages up to 150V leading to a depletion depth of several 10um. Prototype sensors in the ams H18 180nm and H35 350nm HV-CMOS processes have been manufactured, acting as a potential drop-in replacement for the current ATLAS Pixel sensors, thus leaving higher level processing such as trigger handling to dedicated read-out chips. Sensors were thoroughly tested in lab measurements as well as in testbeam experiments. Irradiation with X-rays and protons revealed a tolerance to ionizing doses o...

  5. YARR - A PCIe based Readout Concept for Current and Future ATLAS Pixel Modules

    Science.gov (United States)

    Heim, Timon

    2017-10-01

    The Yet Another Rapid Readout (YARR) system is a DAQ system designed for the readout of current generation ATLAS Pixel FE-I4 and next generation chips. It utilises a commercial-off-the-shelf PCIe FPGA card as a reconfigurable I/O interface, which acts as a simple gateway to pipe all data from the Pixel modules via the high speed PCIe connection into the host system’s memory. Relying on modern CPU architectures, which enables the usage of parallelised processing in threads and commercial high speed interfaces in everyday computers, it is possible to perform all processing on a software level in the host CPU. Although FPGAs are very powerful at parallel signal processing their firmware is hard to maintain and constrained by their connected hardware. Software, on the other hand, is very portable and upgraded frequently with new features coming at no cost. A DAQ concept which does not rely on the underlying hardware for acceleration also eases the transition from prototyping in the laboratory to the full scale implementation in the experiment. The overall concept and data flow will be outlined, as well as the challenges and possible bottlenecks which can be encountered when moving the processing from hardware to software.

  6. Development and Characterization of Diamond and 3D-Silicon Pixel Detectors with ATLAS-Pixel Readout Electronics

    CERN Document Server

    Mathes, Markus

    2008-01-01

    Hybrid pixel detectors are used for particle tracking in the innermost layers of current high energy experiments like ATLAS. After the proposed luminosity upgrade of the LHC, they will have to survive very high radiation fluences of up to 10^16 particles per cm^2 per life time. New sensor concepts and materials are required, which promise to be more radiation tolerant than the currently used planar silicon sensors. Most prominent candidates are so-called 3D-silicon and single crystal or poly-crystalline diamond sensors. Using the ATLAS pixel electronics different detector prototypes with a pixel geometry of 400 × 50 um^2 have been built. In particular three devices have been studied in detail: a 3D-silicon and a single crystal diamond detector with an active area of about 1 cm^2 and a poly-crystalline diamond detector of the same size as a current ATLAS pixel detector module (2 × 6 cm^2). To characterize the devices regarding their particle detection efficiency and spatial resolution, the charge collection ...

  7. Development of pixel readout integrated circuits for extreme rate and radiation

    CERN Document Server

    Garcia-Sciveres, M; CERN. Geneva. The LHC experiments Committee; LHCC

    2013-01-01

    Letter of Intent for RD Collaboration Proposal focused on development of a next generation pixel readout integrated circuits needed for high luminosity LHC detector upgrades. Brings together ATLAS and CMS pixel chip design communities.

  8. Achievements of the ATLAS upgrade planar pixel sensors R and D project

    Energy Technology Data Exchange (ETDEWEB)

    Calderini, G. [Laboratoire de Physique Nucléaire et des Hautes Energies (LPNHE), Paris (France); Dipartimento di Fisica E. Fermi, Universitá di Pisa, Pisa (Italy)

    2014-11-21

    This paper reports on recent accomplishments and ongoing work of the ATLAS Planar Pixel Sensors R and D project. Special attention is given in particular to new testbeam results obtained with highly irradiated sensors, developments in the field of slim and active edges and first step towards prototypes of future pixel modules.

  9. The upgraded Pixel Detector of the ATLAS Experiment for Run-II at the Large Hadron Collider

    CERN Document Server

    AUTHOR|(INSPIRE)INSPIRE-00407702

    2016-01-01

    The Pixel Detector of the ATLAS experiment has shown excellent performance during the whole Run-1 of the LHC. Taking advantage of the detector development period 2013 – 2014, the detector was extracted from the experiment and brought to surface to equip it with new service panels and to repair modules furthermore this helped with the installation of the Insertable B-Layer (IBL), fourth layer of pixel, installed in between the existing Pixel Detector and a new beam-pipe at a radius of 3.3 cm. To cope with the high radiation and increased pixel occupancy due to the proximity to the interaction point, two different silicon sensor technologies (planar and 3D) have been used. A new readout chip has been designed with CMOS 130nm technology with larger area, smaller pixel size and faster readout capability. Dedicated design features in combination with a new composite material were considered and used in order to reduce the material budget of the support structure while keeping the optimal thermo-mechanical perfor...

  10. ATLAS calibration delay chip study

    CERN Document Server

    Massol, N

    2003-01-01

    The delay chip is an ASIC developed to precisely adjust signals within the range of 0-24ns in steps of 1ns. In this note, we report the study of the characteristics of this chip like the linearity and the jitter. We describe the influence of temperature and supply voltage on its behavior. Finally, we study its dependency due to the variations in process on a whole production.

  11. Simulations of 3D-Si sensors for the innermost layer of the ATLAS pixel upgrade

    Energy Technology Data Exchange (ETDEWEB)

    Baselga, M.; Pellegrini, G., E-mail: giulio.pellegrini@imb-cnm.csic.es; Quirion, D.

    2017-03-01

    The LHC is expected to reach luminosities up to 3000 fb{sup −1} and the innermost layer of the ATLAS upgrade plans to cope with higher occupancy and to decrease the pixel size. 3D-Si sensors are a good candidate for the innermost layer of the ATLAS pixel upgrade since they exhibit good performance under high fluences and the new designs will have smaller pixel size to fulfill the electronics expectations. This paper reports TCAD simulations of the 3D-Si sensors designed at IMB-CNM with non-passing-through columns that are being fabricated for the next innermost layer of the ATLAS pixel upgrade. It shows the charge collection response before and after irradiation, and the response of 3D-Si sensors located at large η angles.

  12. Performance of n-in-p pixel detectors irradiated at fluences up to $5x10^{15} n_{eq}/cm^{2}$ for the future ATLAS upgrades

    CERN Document Server

    INSPIRE-00219560; La Rosa, A.; Nisius, R.; Pernegger, H.; Richter, R.H.; Weigell, P.

    We present the results of the characterization of novel n-in-p planar pixel detectors, designed for the future upgrades of the ATLAS pixel system. N-in-p silicon devices are a promising candidate to replace the n-in-n sensors thanks to their radiation hardness and cost effectiveness, that allow for enlarging the area instrumented with pixel detectors. The n-in-p modules presented here are composed of pixel sensors produced by CiS connected by bump-bonding to the ATLAS readout chip FE-I3. The characterization of these devices has been performed with the ATLAS pixel read-out systems, TurboDAQ and USBPIX, before and after irradiation with 25 MeV protons and neutrons up to a fluence of 5x10**15 neq /cm2. The charge collection measurements carried out with radioactive sources have proven the feasibility of employing this kind of detectors up to these particle fluences. The collected charge has been measured to be for any fluence in excess of twice the value of the FE-I3 threshold, tuned to 3200 e. The first result...

  13. Pixel readout electronics for LHC and biomedical applications

    CERN Document Server

    Blanquart, L; Comes, G; Delpierre, P A; Fischer, P; Hausmann, J C; Keil, M; Lindner, Manfred; Meuser, S; Wermes, N

    2000-01-01

    The demanding requirements for pixel readout electronics for high- energy physics experiments and biomedical applications are reviewed. Some examples of the measured analog performance of prototype chips are given. The readout architectures of the PIxel readout for the ATlas experiment (PIRATE) chip suited for LHC experiments and of the multi-picture element counter (MPEC) counting chip targeted for biomedical applications are presented. First results with complete chip-sensor assemblies are also shown. (12 refs).

  14. Studies for an upgrade of ALICE Inner Tracking System: Pixel chip characterization

    Directory of Open Access Journals (Sweden)

    Park Jonghan

    2017-01-01

    Full Text Available Inner Tracking System (ITS of ALICE is used for vertex determination and tracking. Future heavy-ion program at the LHC aims to run with high luminosity. To address this challenge, upgrade program of ITS is underway, which aims at better position resolution (factor of 3, high detection efficiency (>99%, high-rate readout capabilities (100 kHz for Pb-Pb and moderate radiation hardness (> 700 krad. The new ITS will be composed with 7 layers of silicon pixel chip based on Monolithic Active Pixel Sensor (MAPS technology. The characterization test of various version of prototype chips at different phases of development has been performed. This contribution will provide the main characterization results obtained from the measurements performed at laboratories and using test beam for finalizing the pixel chip specification.

  15. Testbeam Measurements with Pixel Sensors for the ATLAS Insertable b-Layer Project

    CERN Document Server

    George, Matthias; Quadt, Arnulf

    During the current long machine shutdown of the Large Hadron Collider (LHC) at CERN (Geneva), the innermost part of the ATLAS experiment, the pixel detector, is upgraded. The existing ATLAS pixel system is equipped with silicon sensors, organized in three barrel layers and three end cap disks on either side. To cope with the higher instantaneous luminosity in the future and for compensation of radiation damages due to past and near future running time of the experiment, a new fourth pixel detector layer is inserted into the existing system. This additional pixel layer is called “Insertable b-Layer” (IBL). The IBL is a detector system, based on silicon pixel sensors. Due to the smaller radius, compared to all other detectors of the ATLAS experiment, it has to be more radiation tolerant, than e.g. the current pixel layers. Furthermore, a reduced pixel size is necessary to cope with the expected higher particle flux. During the planning phase for the IBL upgrade, three different sensor technologies were comp...

  16. Overview of Silicon Pixel Sensor Development for the ATLAS Insertable B-Layer (IBL)

    CERN Document Server

    Grinstein, S; The ATLAS collaboration

    2011-01-01

    The ATLAS Pixel Detector is the innermost part of the ATLAS tracking system and is critical for track and vertex reconstruction. In order to preserve the tracking performance notwithstanding the increasing instantaneous luminosity delivered by the LHC, ATLAS plans to introduce a new pixel layer (IBL) mounted directly on a reduced diameter beam pipe. The IBL will have to sustain an estimated radiation dose, including safety factors, of $5 imes 10^{15}$~n$_{eq}$/cm$^2$. Two sensor technologies are currently being considered for the IBL, planar n-on-n slim edge and 3D double sided designs. Results of the characterization, irradiation and beam test studies of IBL pixel devices are presented.

  17. Probing and irradiation tests of ALICE pixel chip wafers and sensors

    CERN Document Server

    Cinausero, M; Antinori, F; Chochula, P; Dinapoli, R; Dima, R; Fabris, D; Galet, G; Lunardon, M; Manea, C; Marchini, S; Martini, S; Moretto, S; Pepato, Adriano; Prete, G; Riedler, P; Scarlassara, F; Segato, G F; Soramel, F; Stefanini, G; Turrisi, R; Vannucci, L; Viesti, G

    2004-01-01

    In the framework of the ALICE Silicon Pixel Detector (SPD) project a system dedicated to the tests of the ALICE1LHCb chip wafers has been assembled and is now in use for the selection of pixel chips to be bump-bonded to sensor ladders. In parallel, radiation hardness tests of the SPD silicon sensors have been carried out using the 27 MeV proton beam delivered by the XTU TANDEM accelerator at the SIRAD facility in LNL. In this paper we describe the wafer probing and irradiation set-ups and we report the obtained results. (6 refs).

  18. Single event effects in the pixel readout chip for BTeV

    Energy Technology Data Exchange (ETDEWEB)

    Gabriele Chiodini et al.

    2001-12-07

    In future experiments the readout electronics for pixel detectors is required to be resistant to a very high radiation level. In this paper we report on irradiation tests performed on several preFPIX2 prototype pixel readout chips for the BTeV experiment exposed to a 200 MeV proton beam. The prototype chips have been implemented in commercial 0.25 {micro}m CMOS processes following radiation tolerant design rules. The results show that this ASIC design tolerates a large total radiation dose, and that radiation induced Single Event Effects occur at a manageable level.

  19. Design and Characterization of 64K Pixels Chips Working in Single Photon Processing Mode

    CERN Document Server

    Llopart Cudie, Xavier; Campbell, M

    2007-01-01

    Progress in CMOS technology and in fine pitch bump bonding has made possible the development of high granularity single photon counting detectors for X-ray imaging. This thesis studies the design and characterization of three pulse processing chips with 65536 square pixels of 55 µm x 55 µm designed in a commercial 0.25 µm 6-metal CMOS technology. The 3 chips share the same architecture and dimensions and are named Medipix2, Mpix2MXR20 and Timepix. The Medipix2 chip is a pixel detector readout chip consisting of 256 x 256 identical elements, each working in single photon counting mode for positive or negative input charge signals. The preamplifier feedback provides compensation for detector leakage current on a pixel by pixel basis. Two identical pulse height discriminators are used to define an energy window. Every event falling inside the energy window is counted with a 13 bit pseudo-random counter. The counter logic, based in a shift register, also behaves as the input/output register for the pixel. Each...

  20. Cost effective flip chip assembly and interconnection technologies for large area pixel sensor applications

    Science.gov (United States)

    Fritzsch, T.; Jordan, R.; Oppermann, H.; Ehrmann, O.; Töpper, M.; Baumgartner, T.; Lang, K.-D.

    2011-09-01

    Much of the cost of manufacturing pixel detectors is due to bumping and flip chip assembly of the readout chips onto sensor tiles, even if it is done on wafer level. To address this issue, Fraunhofer IZM investigated two new technological approaches, namely screen printing using dry film resist and chip-to-wafer assembly. In the first approach, solder bumps with diameters of 80 and 25 μm in pitches of 110 and 60 μm, respectively, were produced by screen-printing solder paste using a photo-structured dry film resist. Results indicated that the technology is a viable high yield and low cost bumping process. The second approach was developed to decrease the number of manual handling steps in pixel module manufacturing, which is critical for reducing processing time and cost. Here, chip designs on 200 mm readout chip (ROC) wafers and 150 mm sensor wafers were especially adapted for chip-to-wafer assembly and to ensure that the interconnection yield and reliability could be tested. After bumping and dicing of the readout chip wafer and UBM plating on the sensor wafer, individual dice were flip chip mounted on the pre-diced sensor wafer. This paper describes the technological steps, key processing parameters and first results for both technologies.

  1. Charge Pump Clock Generation PLL for the Data Output Block of the Upgraded ATLAS Pixel Front-End in 130 nm CMOS

    CERN Document Server

    Kruth, A; Arutinov, D; Barbero, M; Gronewald, M; Hemperek, T; Karagounis, M; Krueger, H; Wermes, N; Fougeron, D; Menouni, M; Beccherle, R; Dube, S; Ellege, D; Garcia-Sciveres, M; Gnani, D; Mekkaoui, A; Gromov, V; Kluit, R; Schipper, J

    2009-01-01

    FE-I4 is the 130 nm ATLAS pixel IC currently under development for upgraded Large Hadron Collider (LHC) luminosities. FE-I4 is based on a low-power analog pixel array and digital architecture concepts tuned to higher hit rates [1]. An integrated Phase Locked Loop (PLL) has been developed that locally generates a clock signal for the 160 Mbit/s output data stream from the 40 MHz bunch crossing reference clock. This block is designed for low power, low area consumption and recovers quickly from loss of lock related to single-event transients in the high radiation environment of the ATLAS pixel detector. After a general introduction to the new FE-I4 pixel front-end chip, this work focuses on the FE-I4 output blocks and on a first PLL prototype test chip submitted in early 2009. The PLL is nominally operated from a 1.2V supply and consumes 3.84mW of DC power. Under nominal operating conditions, the control voltage settles to within 2% of its nominal value in less than 700 ns. The nominal operating frequency for t...

  2. CMOS pixel development for the ATLAS experiment at HL-LHC

    CERN Document Server

    Rimoldi, Marco; The ATLAS collaboration

    2017-01-01

    To cope with the rate and radiation environment expected at the HL-LHC new approaches are being developed on CMOS pixel detectors, providing charge collection in a depleted layer. They are based on: HV enabling technologies that allow to use high depletion voltages, high resistivity wafers for large depletion depths; radiation hard processed with multiple nested wells to allow CMOS electronics embedded with sufficient shielding into the sensor substrate and backside processing and thinning for material minimization and backside voltage application. Since 2014, members of more than 20 groups in the ATLAS experiment are actively pursuing CMOS pixel R$\\&$D in an ATLAS Demonstrator program pursuing sensor design and characterizations. The goal of this program is to demonstrate that depleted CMOS pixels are suited for high rate, fast timing and high radiation operation at LHC. For this a number of technologies have been explored and characterized. In this presentation the challenges for the usage of CMOS pixel...

  3. Performance of silicon pixel detectors at small track incidence angles for the ATLAS Inner Tracker Upgrade

    CERN Document Server

    AUTHOR|(INSPIRE)INSPIRE-00232885; The ATLAS collaboration; Banerjee, Swagato; Brandt, Gerhard; Carney, Rebecca; Garcia-Sciveres, Maurice; Hard, Andrew; Kaplan, Laser Seymour; Kashif, Lashkar; Pranko, Aliaksandr; Rieger, Julia; Wolf, Julian Choate; Wu, Sau Lan; Yang, Hongtao

    2015-01-01

    In order to enable the ATLAS experiment to successfully track charged particles produced in high-energy collisions at the High-Luminosity Large Hadron Collider, the current ATLAS Inner Detector will be replaced by the Inner Tracker (ITk), entirely composed of silicon pixel and strip detectors. An extension of the tracking coverage of the ITk to very forward pseudorapidity values is proposed, using pixel modules placed in a long cylindrical layer around the beam pipe. The measurement of long pixel clusters, detected when charged particles cross the silicon sensor at small incidence angles, has potential to significantly improve the tracking efficiency, fake track rejection, and resolution of the ITk in the very forward region. The performance of state-of-the-art pixel modules at small track incidence angles is studied using test beam data collected at SLAC and CERN.

  4. Development of a detector control system for the serially powered ATLAS pixel detector at the HL-LHC

    Energy Technology Data Exchange (ETDEWEB)

    Puellen, Lukas

    2015-02-10

    In the years around 2020 the LHC will be upgraded to the HL-LHC. In terms of this upgrade, the ATLAS detector will also be upgraded. This also includes the pixel detector, the innermost of the sub-detectors in ATLAS. Thereby the powering concept of the pixel detector will be changed to reduce the material budget of the detector. From individual powering of each detector module, the concept changes to serial powering, where all modules of a powering group are connected in series. This change makes the development of a new detector control system (DCS) mandatory. Therefore, a new concept for the ATLAS pixel DCS is being developed at the University of Wuppertal. This concept is split into three paths: a safety path, a control path, and a diagnostics path. The safety path is a hard wired interlock system. The concept of this system will not differ significantly, compared to the interlock system of the current detector. The diagnostics path is embedded into the optical data read-out of the detector and will be used for detector tuning with high precision and granularity. The control path supervises the detector and provides a user interface to the hardware components. A concept for this path, including a prototype and proof-of-principle studies, has been developed in terms of this thesis. The control path consists of the DCS network, a read-out and controlling topology created by two types of ASICs: the DCS controller and the DCS chip. These ASICs measure and control all values, necessary for a safe detector operation in situ. This reduces the number of required cables and hence the material budget of the system. For the communication between these ASICs, two very fault tolerant bus protocols have been chosen: CAN bus carries data from the DCS computers, outside of the detector, to the DCS controllers at the edge of the pixel detector. For the communication between the DCS controller and the DCS chip, which is located close to each detector module, an enhanced I2C

  5. Modeling Radiation Damage Effects in 3D Pixel Digitization for the ATLAS Detector

    CERN Document Server

    Giugliarelli, Gilberto; The ATLAS collaboration

    2017-01-01

    Silicon Pixel detectors are at the core of the current and planned upgrade of the ATLAS detector. As the detector in closest proximity to the interaction point, these detectors will be subjected to a significant amount of radiation over their lifetime: prior to the HL-LHC, the innermost layers will receive a fluence in excess of 10^15 neq/cm2 and the HL-LHC detector upgrades must cope with an order of magnitude higher fluence integrated over their lifetimes. This poster presents the details of a new digitization model that includes radiation damage effects to the 3D Pixel sensors for the ATLAS Detector.

  6. Modeling Radiation Damage Effects in 3D Pixel Digitization for the ATLAS Detector

    CERN Document Server

    Wallangen, Veronica; The ATLAS collaboration

    2017-01-01

    Silicon Pixel detectors are at the core of the current and planned upgrade of the ATLAS detector. As the detector in closest proximity to the interaction point, these detectors will be subjected to a significant amount of radiation over their lifetime: prior to the HL-LHC, the innermost layers will receive a fluence in excess of 10$^{15}$ n$_\\mathrm{eq}$/cm$^2$ and the HL-LHC detector upgrades must cope with an order of magnitude higher fluence integrated over their lifetimes. This work presents the details of a new digitization model that includes radiation damage effects to the 3D Pixel sensors for the ATLAS detector.

  7. Operational Experience and Performance with the ATLAS Pixel detector with emphasis on radiation damage

    CERN Document Server

    Garcia Pascual, Juan Antonio; The ATLAS collaboration

    2017-01-01

    The tracking performance of the ATLAS detector relies critically on its 4-layer Pixel Detector, that has undergone significant hardware and software upgrades to meet the challenges imposed by the higher collision energy, pileup and luminosity that are being delivered by the Large Hadron Collider, with record breaking instantaneous luminosities of 1.3 x 10$^{34}$ cm$^{-2}$ s$^{-1}$ recently surpassed. The key status and performance metrics of the ATLAS Pixel Detector are summarised, and the operational experience and requirements to ensure optimum data quality and data taking efficiency are described, with special emphasis to radiation damage experience.

  8. Radiation Damage Modeling for 3D Pixel Sensors in the ATLAS Detector

    CERN Document Server

    Wallangen, Veronica; The ATLAS collaboration

    2017-01-01

    Silicon Pixel detectors are at the core of the current and planned upgrade of the ATLAS detector. As the detector in closest proximity to the interaction point, these detectors will be subjected to a significant amount of radiation over their lifetime: prior to the HL-LHC, the innermost layers will receive a fluence in excess of 10^15 neq/cm2 and the HL-LHC detector upgrades must cope with an order of magnitude higher fluence integrated over their lifetimes. This poster presents the details of a new digitization model that includes radiation damage effects to the 3D Pixel sensors for the ATLAS Detector.

  9. Operational Experience and Performance with the ATLAS Pixel detector with emphasis on radiation damage

    CERN Document Server

    Butti, Pierfrancesco; The ATLAS collaboration

    2017-01-01

    The tracking performance of the ATLAS detector relies critically on its 4-layer Pixel Detector, that has undergone significant hardware and software upgrades to meet the challenges imposed by the higher collision energy, pileup and luminosity that are being delivered by the Large Hadron Collider, with record breaking instantaneous luminosities of 1.3 x 10^34 cm-2 s-1 recently surpassed. The key status and performance metrics of the ATLAS Pixel Detector are summarised, and the operational experience and requirements to ensure optimum data quality and data taking efficiency are described, with special emphasis to radiation damage experience.

  10. Recent results of the ATLAS Upgrade Planar Pixel Sensors R&D Project

    CERN Document Server

    AUTHOR|(CDS)2073610

    2011-01-01

    The ATLAS detector has to undergo significant updates at the end of the current decade, in order to withstand the increased occupancy and radiation damage that will be produced by the high-luminosity upgrade of the Large Hadron Collider. In this presentation we give an overview of the recent accomplishments of the R&D activity on the planar pixel sensors for the ATLAS Inner Detector upgrade.

  11. Measurement of Radiation Damage to 130nm Hybrid Pixel Detector Readout Chips

    CERN Document Server

    Plackett, R; Ballabriga, R; Campbell, M; Tlustos, L; Wong, W

    2009-01-01

    We present the first measurements of the performance of the Medipix3 hybrid pixel readout chip after exposure to significant x-ray flux. Specifically the changes in performance of the mixed mode pixel architecture, the digital periphery, digital to analogue converters and the e-fuse technology were characterised. A high intensity, calibrated x- ray source was used to incrementally irradiate the separate regions of the detector whilst it was powered. This is the first total ionizing dose study of a large area pixel detector fabricated using the 130nm CMOS technology.

  12. CMOS active pixel sensor type imaging system on a chip

    Science.gov (United States)

    Fossum, Eric R. (Inventor); Nixon, Robert (Inventor)

    2011-01-01

    A single chip camera which includes an .[.intergrated.]. .Iadd.integrated .Iaddend.image acquisition portion and control portion and which has double sampling/noise reduction capabilities thereon. Part of the .[.intergrated.]. .Iadd.integrated .Iaddend.structure reduces the noise that is picked up during imaging.

  13. GridPix: An integrated readout system for gaseous detectors with a pixel chip as anode

    Energy Technology Data Exchange (ETDEWEB)

    Graaf, Harry van der [NIKHEF, Kruislaan 409, 1098 SJ Amsterdam (Netherlands)], E-mail: vdgraaf@nikhef.nl

    2007-10-01

    GridPix is a gas-filled detector in which a Micro Pattern Gas Detector is combined with a CMOS pixel chip. In a next step, a procedure to construct a grid onto a Si wafer, using chip production technology ('wafer post-processing'), has been developed. Protection against discharges are under study, and an ageing test of a Micromegas chamber has been carried out, after verifying the chamber's proportionality at a very high dose rate. The GridPix detector can be applied as X-ray imaging device. With a drift gap of only 1 mm, GridPix could be well applied as radiation hard, low power, (and therefore) low-mass vertex (track) detector. New developments in CMOS pixel chips, forming the core of the detector, are presented.

  14. GridPix: An integrated readout system for gaseous detectors with a pixel chip as anode

    Science.gov (United States)

    van der Graaf, Harry

    2007-10-01

    GridPix is a gas-filled detector in which a Micro Pattern Gas Detector is combined with a CMOS pixel chip. In a next step, a procedure to construct a grid onto a Si wafer, using chip production technology ('wafer post-processing'), has been developed. Protection against discharges are under study, and an ageing test of a Micromegas chamber has been carried out, after verifying the chamber's proportionality at a very high dose rate. The GridPix detector can be applied as X-ray imaging device. With a drift gap of only 1 mm, GridPix could be well applied as radiation hard, low power, (and therefore) low-mass vertex (track) detector. New developments in CMOS pixel chips, forming the core of the detector, are presented.

  15. Development of thin sensors and a novel interconnection technology for the upgrade of the ATLAS pixel system

    Energy Technology Data Exchange (ETDEWEB)

    Beimforde, Michael

    2010-07-19

    edge demonstrate that the active sensor area fraction can be increased to fulfill the requirements for the detector upgrades. A subset of sensors, irradiated up to the fluence expected at the sLHC demonstrated that thin sensors show a higher charge collection efficiency than expected from current radiation damage models. First thin diodes equipped with the SLID metallization and first test structures that were connected with SLID indicate that this novel interconnection as part of the ICV-SLID technology could be a suitable replacement for the present bump-bonding technology. Finally, a new calibration algorithm for the ATLAS pixel readout chips is presented which is used to lower the discriminator threshold from 4000 electrons to 2000 electrons, to account for the reduction of the signal size due to radiation damage and the reduced sensor thickness. (orig.)

  16. Modeling Radiation Damage Effects in 3D Pixel Digitization for the ATLAS Detector

    CERN Document Server

    Giugliarelli, Gilberto; The ATLAS collaboration

    2018-01-01

    Silicon Pixel detectors are at the core of the current and planned upgrade of the ATLAS experiment. They constitute the part of ATLAS closest to the interaction point and for this reason they will be exposed – over their lifetime – to a significant amount of radiation: prior to the HL-LHC, the innermost layers will receive a fluence of 10^15 neq/cm2 and their HL–LHC upgrades will have to cope with an order of magnitude higher fluence integrated over their lifetimes. This poster presents the details of a new digitization model that includes radiation damage effects to the 3D Pixel sensors for the ATLAS Detector.

  17. CMOS pixel development for the ATLAS experiment at HL-LHC

    CERN Document Server

    Risti{c}, Branislav; The ATLAS collaboration

    2017-01-01

    To cope with the rate and radiation environment expected at the HL-LHC new approaches are being developed on CMOS pixel detectors, providing charge collection in a depleted layer. They are based on: HV enabling technologies that allow to use high depletion voltages (HV-MAPS), high resistivity wafers for large depletion depths (HR-MAPS); radiation hard processed with multiple nested wells to allow CMOS electronics embedded with sufficient shielding into the sensor substrate and backside processing and thinning for material minimization and backside voltage application. Since 2014, members of more than 20 groups in the ATLAS experiment are actively pursuing CMOS pixel R&D in an ATLAS Demonstrator program pursuing sensor design and characterizations. The goal of this program is to demonstrate that depleted CMOS pixels, with monolithic or hybrid designs, are suited for high rate, fast timing and high radiation operation at LHC. For this a number of technologies have been explored and characterized. In this pr...

  18. CMOS Pixel Development for the ATLAS Experiment at HL-LHC

    CERN Document Server

    Gaudiello, Andrea; The ATLAS collaboration

    2017-01-01

    To cope with the rate and radiation environment expected at the HL-LHC new approaches are being developed on CMOS pixel detectors, providing charge collection in a depleted layer. They are based on: HV enabling technologies that allow to use high depletion voltages (HV-MAPS), high resistivity wafers for large depletion depths (HR-MAPS); radiation hard processed with multiple nested wells to allow CMOS electronics embedded with sufficient shielding into the sensor substrate and backside processing and thinning for material minimization and backside voltage application. Since 2014, members of more than 20 groups in the ATLAS experiment are actively pursuing CMOS pixel R&D in an ATLAS Demonstrator program pursuing sensor design and characterizations. The goal of this program is to demonstrate that depleted CMOS pixels, with monolithic or hybrid designs, are suited for high rate, fast timing and high radiation operation at LHC. For this a number of technologies have been explored and characterized. In this pr...

  19. The ALPIDE pixel sensor chip for the upgrade of the ALICE Inner Tracking System

    Energy Technology Data Exchange (ETDEWEB)

    Aglieri Rinella, Gianluca, E-mail: gianluca.aglieri.rinella@cern.ch

    2017-02-11

    The ALPIDE chip is a CMOS Monolithic Active Pixel Sensor being developed for the Upgrade of the ITS of the ALICE experiment at the CERN Large Hadron Collider. The ALPIDE chip is implemented with a 180 nm CMOS Imaging Process and fabricated on substrates with a high-resistivity epitaxial layer. It measures 15 mm×30 mm and contains a matrix of 512×1024 pixels with in-pixel amplification, shaping, discrimination and multi-event buffering. The readout of the sensitive matrix is hit driven. There is no signaling activity over the matrix if there are no hits to read out and power consumption is proportional to the occupancy. The sensor meets the experimental requirements of detection efficiency above 99%, fake-hit probability below 10{sup −5} and a spatial resolution of 5 μm. The capability to read out Pb–Pb interactions at 100 kHz is provided. The power density of the ALPIDE chip is projected to be less than 35 mW/cm{sup 2} for the application in the Inner Barrel Layers and below 20 mW/cm{sup 2} for the Outer Barrel Layers, where the occupancy is lower. This contribution describes the architecture and the main features of the final ALPIDE chip, planned for submission at the beginning of 2016. Early results from the experimental qualification of full scale prototype predecessors are also reported. - Highlights: • The ALPIDE chip, an innovative CMOS pixel particle detector is described. • It achieves excellent detection performance figures and very low power consumption. • The characterization of prototypes confirms the achievement of the specifications.

  20. Effets de rayonnement sur les detecteurs au silicium a pixels du detecteur ATLAS

    CERN Document Server

    Lebel, Celine

    2007-01-01

    Two detection systems are using pixel silicon detectors in the ATLAS detector: the Pixel, which is the subdetector closest to the interaction point, and the MPX network. The activation of the materials present in the Pixel produced by radiation has been measured in two experiments which we performed at CERF (CERN) and NPI-ASCR (Czech Republic). These experimental studies of activation are com- pared with GEANT4 simulations. The results of these comparisons show that the simulation can predict the activities with a precision of an order of magnitude. They also show that GEANT4 fails to produce certain radioisotopes seen in the experimental activation studies. The contribution to background and the resid- ual doses due to the desintegration of the radioisotopes produced by fast neutrons (category in which falls the expected average neutron energy of 1 MeV in ATLAS) are extrapolated to ATLAS conditions. It is found that this background in the AT- LAS Pixel subdetector will be negligible and that the doses are we...

  1. Evaluation of testing strategies for the radiation tolerant ATLAS n **+-in-n pixel sensor

    CERN Document Server

    Klaiber Lodewigs, Jonas M

    2003-01-01

    The development of particle tracker systems for high fluence environments in new high-energy physics experiments raises new challenges for the development, manufacturing and reliable testing of radiation tolerant components. The ATLAS pixel detector for use at the LHC, CERN, is designed to cover an active sensor area of 1.8 m**2 with 1.1 multiplied by 10 **8 read-out channels usable for a particle fluence up to 10 **1**5 cm**-**2 (1 MeV neutron equivalent) and an ionization dose up to 500 kGy of mainly charged hadron radiation. To cope with such a harsh environment the ATLAS Pixel Collaboration has developed a radiation hard n **+-in-n silicon pixel cell design with a standard cell size of 50 multiplied by 400 mum**2. Using this design on an oxygenated silicon substrate, sensor production has started in 2001. This contribution describes results gained during the development of testing procedures of the ATLAS pixel sensor and evaluates quality assurance procedures regarding their relevance for detector operati...

  2. Spatial and vertex resolution studies on the ATLAS Pixel Detector based on Combined Testbeam 2004 data

    CERN Document Server

    Reisinger, Ingo; Klingenberg, Reiner

    2006-01-01

    This diploma thesis deals with spatial and vertex resolution studies on the ATLAS Pixel detector based on real data taken during the Combined Testbeam period 2004 (17th May - 15th November). For the Combined Testbeam a barrel segment of the ATLAS Detector was build up and tested under real experimental conditions. Several data sets, being recorded during that time, are reconstructed by the ATLAS control framework called ATHENA. The input information for the reconstruction of the particle tracks through the Pixel Detector are the so-called spacepoints. Their uncertainty affects the resolution of the reconstructed particle tracks and thus, also the accuracy of the vertex reconstruction. Since traversing particles deposite their charge mostly (but not compellingly) within more than one pixel, all pixels corresponding to one hit have to be grouped together to a cluster. To compute the spacepoint from the cluster information two different strategies can be performed. The first one is a digital clustering, w...

  3. Index of /data/chip-atlas/20161018 [Life Science Database Archive metadata

    Lifescience Database Archive (English)

    Full Text Available Index of /data/chip-atlas/20161018 Name Last modified Size Description Parent Direc...tory - README.html 18-Oct-2016 11:45 18K README_e.html 18-Oct-2016 11:45 17K chip_atlas_analysis_..> 18-Oct-2016 10:56 43K chip..._atlas_antigen_l..> 18-Oct-2016 10:56 135K chip_atlas_celltype_..> 18-Oct-2016 10:56 125K chip..._atlas_experimen..> 18-Oct-2016 10:56 3.7M chip_atlas_file_list..> 18-Oct-2016 10:56 5.1M Index of /data/chip-atlas/20161018 ...

  4. The Pixels find their way to the heart of ATLAS

    CERN Multimedia

    Kevin Einsweiler

    Since the last e-news article on the Pixel Detector in December 2006, there has been much progress. At that time, we were just about to receive the Beryllium beampipe, and to integrate the innermost layer of the Pixel Detector around it. This innermost layer is referred to as the B-layer because of the powerful role it plays in finding the secondary vertices that are the key signature for the presence of b-quarks, and with somewhat greater difficulty, c-quarks and tau leptons. The integration of the central 7m long beampipe into the Pixel Detector was completed in December, and the B-layer was successfully integrated around it. In January this year, we had largely completed the central 1.5m long detector, including the three barrel layers and the three disk layers on each end of the barrel. Although this region contains all of the 80 million readout channels, it cannot be integrated into the Inner Detector without additional services and infrastructure. Therefore, the next step was to add the Service Panels...

  5. Operational Experience of the ATLAS SemiConductor Tracker and Pixel Detector

    CERN Document Server

    Robinson, Dave; The ATLAS collaboration

    2016-01-01

    The tracking performance of the ATLAS detector relies critically on the silicon and gaseous tracking subsystems that form the ATLAS Inner Detector. Those subsystems have undergone significant hardware and software upgrades to meet the challenges imposed by the higher collision energy, pileup and luminosity that are being delivered by the LHC during Run2. The key status and performance metrics of the Pixel Detector and the Semi Conductor Tracker are summarised, and the operational experience and requirements to ensure optimum data quality and data taking efficiency are described.

  6. A Leakage Current-based Measurement of the Radiation Damage in the ATLAS Pixel Detector

    CERN Document Server

    Gorelov, Igor; The ATLAS collaboration

    2015-01-01

    A measurement has been made of the radiation damage incurred by the ATLAS Pixel Detector barrel silicon modules from the beginning of operations through the end of 2012. This translates to hadronic fluence received over the full period of operation at energies up to and including 8 TeV. The measurement is based on a per-module measurement of the silicon sensor leakage current. The results are presented as a function of integrated luminosity and compared to predictions by the Hamburg Model. This information can be used to predict limits on the lifetime of the Pixel Detector due to current, for various operating scenarios.

  7. Simulation of an efficiency measurement of the CMS pixel Read-Out Chip at high rates.

    CERN Document Server

    Delcourt, Martin

    2014-01-01

    My summer student project investigates the effects on the efficiency of out-of-sync events during a beam test at Fermilab on pixel detectors for the phase 1 upgrade of the CMS. While the best results of this project came from direct lab measurements, most of my work was focused on the development of a wider simulation to have a better understanding of the behaviour of the read-out chips during the beam test.

  8. A module concept for the upgrades of the ATLAS pixel system using the novel SLID-ICV vertical integration technology

    CERN Document Server

    Beimforde, M; Macchiolo, A; Moser, H G; Nisius, R; Richter, R H; Weigell, P; 10.1088/1748-0221/5/12/C12025

    2010-01-01

    The presented R&D activity is focused on the development of a new pixel module concept for the foreseen upgrades of the ATLAS detector towards the Super LHC employing thin n-in-p silicon sensors together with a novel vertical integration technology. A first set of pixel sensors with active thicknesses of 75 μm and 150 μm has been produced using a thinning technique developed at the Max-Planck-Institut für Physik (MPP) and the MPI Semiconductor Laboratory (HLL). Charge Collection Efficiency (CCE) measurements of these sensors irradiated with 26 MeV protons up to a particle fluence of 1016neqcm−2 have been performed, yielding higher values than expected from the present radiation damage models. The novel integration technology, developed by the Fraunhofer Institut EMFT, consists of the Solid-Liquid InterDiffusion (SLID) interconnection, being an alternative to the standard solder bump-bonding, and Inter-Chip Vias (ICVs) for routing signals vertically through electronics. This allows for extracting the ...

  9. Estudio de los DAC setting para el chip de pixeles del experimento CMS

    CERN Document Server

    Ttito Guzman, Pedro

    2008-01-01

    A charged particle passing through the pixel detector of the 'Compact Muon Solenoid' (CMS), generated a pulse height that is proportional to the ionized charge collected by the pixel. The pulse height is one of the most important pieces of information used to obtain a good spatial resolution to study the pixel response when a charge is inyected. In particular, we study the effect of some of the 'DACs' (Digital to Analog Converter) as a function of the pulse height (PH) by varing the read-out chip parameters. We study the observed dependence and its effect. This chip has 29 internal parameters called DAC. They control the operation properties of the chip and a good adjustment of them implies an optimal functionality of the detector. Several tests under different experimental conditions were carried out. We changed the detector temperature and the DAC values under study, while the polarization voltage remained fixed. This study was conducted using several scripts, which are programs designed to test the detecto...

  10. The ALPIDE pixel sensor chip for the upgrade of the ALICE Inner Tracking System

    CERN Document Server

    Aglieri Rinella, Gianluca

    2016-01-01

    The ALPIDE chip is a CMOS Monolithic Active Pixel Sensor being developed for the Upgrade of the ITS of the ALICE experiment at the CERN Large Hadron Collider. The ALPIDE chip is implemented with a 180 nm CMOS Imaging Process and fabricated on substrates with a high-resistivity epitaxial layer. It measures 15 mm×30 mm and contains a matrix of 512×1024 pixels with in-pixel amplification, shaping, discrimination and multi-event buffering. The readout of the sensitive matrix is hit driven. There is no signaling activity over the matrix if there are no hits to read out and power consumption is proportional to the occupancy. The sensor meets the experimental requirements of detection efficiency above 99%, fake-hit probability below 10−5 and a spatial resolution of 5 μm. The capability to read out Pb–Pb interactions at 100 kHz is provided. The power density of the ALPIDE chip is projected to be less than 35 mW/cm2 for the application in the Inner Barrel Layers and below 20 mW/cm2 for the Outer Barrel Layers, ...

  11. Dead-time free pixel readout architecture for ATLAS front-end IC

    CERN Document Server

    Einsweiler, Kevin F; Kleinfelder, S A; Luo, L; Marchesini, R; Milgrome, O; Pengg, F X

    1999-01-01

    A low power sparse scan readout architecture has been developed for the ATLAS pixel front-end IC. The architecture supports a dual discriminator and extracts the time over threshold (TOT) information along with a 2-D spatial address $9 of the hits associating them with a unique 7-bit beam crossing number. The IC implements level-1 trigger filtering along with event building (grouping together all hits in a beam crossing) in the end of column (EOC) buffer. The $9 events are transmitted over a 40 MHz serial data link with the protocol supporting buffer overflow handling by appending error flags to events. This mixed-mode full custom IC is implemented in 0.8 mu HP process to meet the $9 requirements for the pixel readout in the ATLAS inner detector. The circuits have been tested and the IC provides dead-time-less ambiguity free readout at 40 MHz data rate.

  12. New Technique for Luminosity Measurement Using 3D Pixel Modules in the ATLAS IBL Detector

    CERN Document Server

    Liu, Peilian; The ATLAS collaboration

    2017-01-01

    The Insertable b-Layer ( IBL ) is the innermost layer of the ATLAS tracking system. It consists of planar pixel modules in the central region and 3D modules at two extremities. We use the cluster length distributions in 3D sensor modules of the IBL to determine the number of primary charged particles per event and suppress backgrounds. This Pixel Cluster Counting ( PCC ) algorithm provides a bunch-by-bunch luminosity measurement. An accurate luminosity measurement is a key component for precision measurements at the Large Hadron Collider and one of the largest uncertainties on the luminosity determination in ATLAS arises from the long-term stability of the measurement technique. The comparison of the PCC algorithm with other existing algorithms provides key insights in assessing and reducing such uncertainty.

  13. Pixel readout chips in deep submicron CMOS for ALICE and LHCb tolerant to 10 Mrad and beyond

    NARCIS (Netherlands)

    Snoeys, W.; Burns, M.; Campbell, M.; Cantatore, E.; Cencelli, V.; Dinapoli, R.; Heijne, E.; Jarron, P.; Lamanna, P.; Minervini, D.; Morel, M.; O'shea, V.; Quiquempoix, V.; San Segundo Bello, D.; van Koningsveld, B.; Wyllie, K.

    The ALICE1LHCB chip is a mixed-mode integrated circuit designed to read out silicon pixel detectors for two different applications: particle tracking in the ALICE Silicon Pixel Detector and particle identification in the LHCb Ring Imaging Cherenkov detector. To satisfy the different needs for these

  14. Study of FPGA and GPU based pixel calibration for ATLAS IBL

    CERN Document Server

    Dopke, J; The ATLAS collaboration; Flick, T; Gabrielli, A; Grosse-Knetter, J; Krieger, N; Kugel, A; Polini, A; Schroer, N

    2010-01-01

    The insertable B-layer (IBL) is a new stage of the ATLAS pixel detector to be installed around 2014. 12 million pixel are attached to new FE-I4 readout ASICs, each controlling 26680 pixel. Compared to the existing FE-I3 based detector the new system features higher readout speed of 160Mbit/s per ASIC and simplified control. For calibration defined charges are applied to all pixels and the resulting time-over-threshold values are evaluated. In the present system multiple sets of two custom VME cards which employ a combination of FPGA and DSP technology are used for I/O interfacing, formatting and processing. The execution time of 51s to perform a threshold scan on a FE-I3 module of 46080 pixel is composed of 8s control, 29s transfer, 7.5s histogramming and 7s analysis. Extrapolating to FE-I4 the times per module of 53760 pixels are 12ms, 5.8s, 9.4s and 8.3s, a total of 23.5s. We present a proposal for a novel approach to the dominant tasks for FE-I4: histogramming and ananlysis. An FPGA-based histogramming uni...

  15. The Upgraded Pixel Detector of the ATLAS Experiment for Run-2 at the LHC

    CERN Document Server

    AUTHOR|(INSPIRE)INSPIRE-00084948; The ATLAS collaboration

    2016-01-01

    Run-2 of the LHC is providing new challenges to track and vertex reconstruction with higher energies, denser jets and higher rates. Therefore the ATLAS experiment has constructed the first 4-layer Pixel detector in HEP, installing a new Pixel layer, also called Insertable B-Layer (IBL). IBL is a fourth layer of pixel detectors, and has been installed in May 2014 at a radius of 3.3 cm between the existing Pixel Detector and a new smaller radius beam-pipe. The new detector, built to cope with high radiation and expected occupancy, is the first large scale application of 3D detectors and CMOS 130 nm technology. In addition the Pixel detector was refurbished with a new service quarter panel to recover about 3% of defective modules lost during run-1 and a new optical readout system to readout the data at higher speed while reducing the occupancy when running with increased luminosity. The commissioning and performance of the 4-layer Pixel Detector, in particular the IBL, will be presented using collision data.

  16. arXiv Characterization and Verification Environment for the RD53A Pixel Readout Chip in 65 nm CMOS

    CERN Document Server

    Vogt, M.; Hemperek, T.; Janssen, J.; Pohl, D.L.; Daas, M.

    The RD53 collaboration is currently designing a large scale prototype pixel readout chip in 65 nm CMOS technology for the phase 2 upgrades at the HL-LHC. The RD53A chip will be available by the end of the year 2017 and will be extensively tested to confirm if the circuit and the architecture make a solid foundation for the final pixel readout chips for the experiments at the HL-LHC. A test and data acquisition system for the RD53A chip is currently under development to perform single-chip and multi-chip module measurements. In addition, the verification of the RD53A design is performed in a dedicated simulation environment. The concept and the implementation of the test and data acquisition system and the simulation environment, which are based on a modular data acquisition and system testing framework, are presented in this work.

  17. CMOS pixel sensor development for the ATLAS experiment at the High Luminosity-LHC

    CERN Document Server

    Rimoldi, Marco; The ATLAS collaboration

    2017-01-01

    The current ATLAS Inner Detector will be replaced with a fully silicon based detector called Inner Tracker (ITk) before the start of the High Luminosity-LHC project (HL-LHC) in 2026. To cope with the harsh environment expected at the HL-LHC, new approaches are being developed for pixel detector based on CMOS pixel techology. Such detectors provide charge collection, analog and digital amplification in the same silicon bulk. The radiation hardness is obtained with multiple nested wells that have embedded the CMOS electronics with sufficient shielding. The goal of this programme is to demonstrate that depleted CMOS pixels are suitable for high rate, fast timing and high radiation operation at the LHC. A number of alternative solutions have been explored and characterised, and are presented in this document.

  18. Novel Silicon n-on-p Edgeless Planar Pixel Sensors for the ATLAS upgrade

    CERN Document Server

    Bomben, M.; Boscardin, M.; Bosisio, L.; Calderini, G.; Chauveau, J.; Giacomini, G.; La Rosa, A.; Marchiori, G.; Zorzi, N.

    2013-01-01

    In view of the LHC upgrade phases towards HL-LHC, the ATLAS experiment plans to upgrade the Inner Detector with an all-silicon system. The n-on-p silicon technology is a promising candidate for the pixel upgrade thanks to its radiation hardness and cost effectiveness, that allow for enlarging the area instrumented with pixel detectors. We report on the development of novel n-in-p edgeless planar pixel sensors fabricated at FBK (Trento, Italy), making use of the 'active edge' concept for the reduction of the dead area at the periphery of the device. After discussing the sensor technology and fabrication process, we present device simulations (pre- and post-irradiation) performed for different sensor configurations. First preliminary results obtained with the test-structures of the production are shown.

  19. Novel Silicon n-on-p Edgeless Planar Pixel Sensors for the ATLAS upgrade

    CERN Document Server

    Bomben, M

    2013-01-01

    In view of the LHC upgrade phases towards HL-LHC, the ATLAS experiment plans to upgrade the inner detector with an all-silicon system. The n-on-p silicon technology is a promising candidate for the pixel upgrade thanks to its radiation hardness and cost effectiveness. The edgeless technology would allow for enlarging the area instrumented with pixel detectors. We report on the development of novel n-on-p edgeless planar pixel sensors fabricated at FBK (Trento, Italy), making use of the active edge concept for the reduction of the dead area at the periphery of the device. After discussing the sensor technology and fabrication process, we present device simulations (pre- and post-irradiation) performed for different sensor configurations. First preliminary results obtained with the test-structures of the production are shown.

  20. Novel silicon n-on-p edgeless planar pixel sensors for the ATLAS upgrade

    Energy Technology Data Exchange (ETDEWEB)

    Bomben, M., E-mail: marco.bomben@cern.ch [Laboratoire de Physique Nucleaire et de Hautes Énergies (LPNHE), Paris (France); Bagolini, A.; Boscardin, M. [Fondazione Bruno Kessler, Centro per i Materiali e i Microsistemi (FBK-CMM) Povo di Trento (Italy); Bosisio, L. [Università di Trieste, Dipartimento di Fisica and INFN, Trieste (Italy); Calderini, G. [Laboratoire de Physique Nucleaire et de Hautes Énergies (LPNHE), Paris (France); Dipartimento di Fisica E. Fermi, Università di Pisa, Pisa (Italy); INFN Sez. di Pisa, Pisa (Italy); Chauveau, J. [Laboratoire de Physique Nucleaire et de Hautes Énergies (LPNHE), Paris (France); Giacomini, G. [Fondazione Bruno Kessler, Centro per i Materiali e i Microsistemi (FBK-CMM) Povo di Trento (Italy); La Rosa, A. [Section de Physique (DPNC), Université de Genève, Genève (Switzerland); Marchiori, G. [Laboratoire de Physique Nucleaire et de Hautes Énergies (LPNHE), Paris (France); Zorzi, N. [Fondazione Bruno Kessler, Centro per i Materiali e i Microsistemi (FBK-CMM) Povo di Trento (Italy)

    2013-12-01

    In view of the LHC upgrade phases towards HL-LHC, the ATLAS experiment plans to upgrade the inner detector with an all-silicon system. The n-on-p silicon technology is a promising candidate for the pixel upgrade thanks to its radiation hardness and cost effectiveness. The edgeless technology would allow for enlarging the area instrumented with pixel detectors. We report on the development of novel n-on-p edgeless planar pixel sensors fabricated at FBK (Trento, Italy), making use of the active edge concept for the reduction of the dead area at the periphery of the device. After discussing the sensor technology and fabrication process, we present device simulations (pre- and post-irradiation) performed for different sensor configurations. First preliminary results obtained with the test-structures of the production are shown.

  1. Flip chip assembly of thinned chips for hybrid pixel detector applications

    CERN Document Server

    Fritzsch, T; Woehrmann, M; Rothermund, M; Huegging, F; Ehrmann, O; Oppermann, H; Lang, K.D

    2014-01-01

    There is a steady trend to ultra-thin microelectronic devices. Especially for future particle detector systems a reduced readout chip thickness is required to limit the loss of tracking precision due to scattering. The reduction of silicon thickness is performed at wafer level in a two-step thinning process. To minimize the risk of wafer breakage the thinned wafer needs to be handled by a carrier during the whole process chain of wafer bumping. Another key process is the flip chip assembly of thinned readout chips onto thin sensor tiles. Besides the prevention of silicon breakage the minimization of chip warpage is one additional task for a high yield and reliable flip chip process. A new technology using glass carrier wafer will be described in detail. The main advantage of this technology is the combination of a carrier support during wafer processing and the chip support during flip chip assembly. For that a glass wafer is glue-bonded onto the backside of the thinned readout chip wafer. After the bump depo...

  2. Irradiation of the ATLAS SCT hybrid equipped with ABCD chips

    CERN Document Server

    Buttar, C M; Dabrowski, W; Dawson, I; Eklund, L; Harper, R; Kaplon, J; Kramberger, G; Kudlaty, G; Lacasta, C; Macina, Daniela; Mandic, I; Mikuz, M; Wolter, M; Zsenei, A

    1999-01-01

    An ATLAS SCT hybrid equipped with 3 ABCD2T chips and 3 ABCD2NT chips has been irradiated with 24 GeV protons from the PS accelerator at CERN. Another hybrid has been irradiated with neutrons from the reactor in Ljubljana. After a total fluence of 3*10^14 p/cm2 at CERN and 2*10^14 n/cm2 from reactor the ABCD2T chips stay fully operational. Their parameters remain within specification and the increased offset spread can be corrected using TrimDacs.

  3. Recent Results of the ATLAS Upgrade Planar Pixel Sensors R&D Project

    CERN Document Server

    Weigell, Philipp

    2013-01-01

    To cope with the higher occupancy and radiation damage at the HL-LHC also the LHC experiments will be upgraded. The ATLAS Planar Pixel Sensor R&D Project (PPS) is an international collaboration of 17 institutions and more than 80 scientists, exploring the feasibility of employing planar pixel sensors for this scenario. Depending on the radius, different pixel concepts are investigated using laboratory and beam test measurements. At small radii the extreme radiation environment and strong space constraints are addressed with very thin pixel sensors active thickness in the range of (75-150) mum, and the development of slim as well as active edges. At larger radii the main challenge is the cost reduction to allow for instrumenting the large area of (7-10) m^2. To reach this goal the pixel productions are being transferred to 6 inch production lines. Additionally, investigated are more cost-efficient and industrialised interconnection techniques as well as the n-in-p technology, which, being a single-sided pr...

  4. Studies on irradiated pixel detectors for the ATLAS IBL and HL-LHC upgrade

    Energy Technology Data Exchange (ETDEWEB)

    Gallrapp, Christian

    2015-07-01

    The constant demand for higher luminosity in high energy physics is the reason for the continuous effort to adapt the accelerators and the experiments. The upgrade program for the experiments and the accelerators at CERN already includes several expansion stages of the Large Hadron Collider (LHC) which will increase the luminosity and the energy of the accelerator. Simultaneously the LHC experiments prepare the individual sub-detectors for the increasing demands in the coming years. Especially the tracking detectors have to cope with fluence levels unprecedented for high energy physics experiments. Correspondingly to the fluence increases the impact of the radiation damage which reduces the life time of the detectors by decreasing the detector performance and efficiency. To cope with this effect new and more radiation hard detector concepts become necessary to extend the life time. This work concentrates on the impact of radiation damage on the pixel sensor technologies to be used in the next upgrade of the ATLAS Pixel Detector as well as for applications in the ATLAS Experiment at HL-LHC conditions. The sensors considered in this work include various designs based on silicon and diamond as sensor material. The investigated designs include a planar silicon pixel design currently used in the ATLAS Experiment as well as a 3D pixel design which uses electrodes penetrating the entire sensor material. The diamond designs implement electrodes similar to the design used by the planar technology with diamond sensors made out of single- and poly-crystalline material. To investigate the sensor properties characterization tests are performed before and after irradiation with protons or neutrons. The measurements are used to determine the interaction between the read-out electronics and the sensors to ensure the signal transfer after irradiation. Further tests focus on the sensor performance itself which includes the analysis of the leakage current behavior and the charge

  5. TCAD Simulations of ATLAS Pixel Guard Ring and Edge Structure for SLHC Upgrade

    CERN Document Server

    Lounis, A; The ATLAS collaboration; Calderini, G; Marchiori, G; Benoit, M; Dinu, N

    2010-01-01

    In this work, the magnitude of the electric field and the depletion inside a simplified two dimensional model of the ATLAS planar pixel sensor for the insertable b-layer and the super-LHC upgrade have been studied. The parameters influencing the breakdown behavior were studied using a finite-element method to solve the drift-diffusion equations coupled to Poisson's equation. Using these models, the number of guard rings, dead edge width and sensor's thickness were modified with respect to the ATLAS actual pixel sensor to investigate their influence on the sensor's depletion at the edge and on its internal electrical field distribution. The goal of the simulation is to establish a model to discriminate between different designs and to select the most optimized to fit the needs in radiation hardness and low material budget of ATLAS inner detector during super-LHC operation. A three defects level model has been implemented in the simulations to study the behavior of such sensors under different level of irradiat...

  6. Recent progress of the ATLAS Planar Pixel Sensor R&D Project

    CERN Document Server

    Bomben, M

    2012-01-01

    The foreseen luminosity upgrade for the LHC (a factor of 5-10 more in peak luminosity by 2021) poses serious constraints on the technology for the ATLAS tracker in this High Luminosity era (HL-LHC). In fact, such luminosity increase leads to increased occupancy and radiation damage of the tracking detectors. To investigate the suitability of pixel sensors using the proven planar technology for the upgraded tracker, the ATLAS Planar Pixel Sensor R&D Project was established comprising 17 institutes and more than 80 scientists. Main areas of research are the performance of planar pixel sensors at highest fluences, the exploration of possibilities for cost reduction to enable the instrumentation of large areas, the achievement of slim or active edge designs to provide low geometric inefficiencies without the need for shingling of modules and the investigation of the operation of highly irradiated sensors at low thresholds to increase the efficiency. In the following I will present results from the group, conc...

  7. 3D silicon pixel detectors for the ATLAS Forward Physics experiment

    CERN Document Server

    INSPIRE-00397348; Cavallaro, E.; Grinstein, S.; López Paz, I.

    2015-01-01

    The ATLAS Forward Physics (AFP) project plans to install 3D silicon pixel detectors about 210 m away from the interaction point and very close to the beamline (2-3 mm). This implies the need of slim edges of about 100-200 $\\mu$m width for the sensor side facing the beam to minimise the dead area. Another challenge is an expected non-uniform irradiation of the pixel sensors. It is studied if these requirements can be met using slightly-modified FE-I4 3D pixel sensors from the ATLAS Insertable B-Layer production. AFP-compatible slim edges are obtained with a simple diamond-saw cut. Electrical characterisations and beam tests are carried out and no detrimental impact on the leakage current and hit efficiency is observed. For devices without a 3D guard ring a remaining insensitive edge of less than 15 $\\mu$m width is found. Moreover, 3D detectors are non-uniformly irradiated up to fluences of several 10$^{15}$ n$_{eq}$/cm$^2$ with either a focussed 23 GeV proton beam or a 23 MeV proton beam through holes in Al ma...

  8. Simulations of planar pixel sensors for the ATLAS high luminosity upgrade

    CERN Document Server

    Calderini, G; Dinu, N; Lounis, A; Marchiori, G

    2011-01-01

    A physics-based device simulation was used to study the charge carrier distribution and the electric field configuration inside simplified two-dimensional models for pixel layouts based on the ATLAS pixel sensor. In order to study the behavior of such detectors under different levels of irradiation, a three-level defect model was implemented into the simulation. Using these models, the number of guard rings, the dead edge width and the detector thickness were modified to investigate their influence on the detector depletion at the edge and on its internal electric field distribution in order to optimize the layout parameters. Simulations indicate that the number of guard rings can be reduced by a few hundred microns with respect to the layout used for the present ATLAS sensors, with a corresponding extension of the active area of the sensors. A study of the inter-pixel capacitance and of the capacitance between the implants and the high-voltage contact as a function of several parameters affecting the geometr...

  9. Laser Soldering and Thermal Cycling Tests of Monolithic Silicon Pixel Chips

    CERN Document Server

    Strand, Frode Sneve

    2015-01-01

    An ALPIDE-1 monolithic silicon pixel sensor prototype has been laser soldered to a flex printed circuit using a novel interconnection technique using lasers. This technique is to be optimised to ensure stable, good quality connections between the sensor chips and the FPCs. To test the long-term stability of the connections, as well as study the effects on hit thresholds and noise in the sensor, it was thermally cycled in a climate chamber 1200 times. The soldered connections showed good qualities like even melting and good adhesion on pad/flex surfaces, and the chip remained in working condition for 1080 cycles. After this, a few connections failed, having cracks in the soldering tin, rendering the chip unusable. Threshold and noise characteristics seemed stable, except for the noise levels of sector 2 in the chip, for 1000 cycles in a temperature interval of "10^{\\circ}" and "50^{\\circ}" C. Still, further testing with wider temperature ranges and more cycles is needed to test the limitations of the chi...

  10. A neural network clustering algorithm for the ATLAS silicon pixel detector

    CERN Document Server

    Aad, Georges; Abdallah, Jalal; Abdel Khalek, Samah; Abdinov, Ovsat; Aben, Rosemarie; Abi, Babak; Abolins, Maris; AbouZeid, Ossama; Abramowicz, Halina; Abreu, Henso; Abreu, Ricardo; Abulaiti, Yiming; Acharya, Bobby Samir; Adamczyk, Leszek; Adams, David; Adelman, Jahred; Adomeit, Stefanie; Adye, Tim; Agatonovic-Jovin, Tatjana; Aguilar-Saavedra, Juan Antonio; Agustoni, Marco; Ahlen, Steven; Ahmadov, Faig; Aielli, Giulio; Akerstedt, Henrik; Åkesson, Torsten Paul Ake; Akimoto, Ginga; Akimov, Andrei; Alberghi, Gian Luigi; Albert, Justin; Albrand, Solveig; Alconada Verzini, Maria Josefina; Aleksa, Martin; Aleksandrov, Igor; Alexa, Calin; Alexander, Gideon; Alexandre, Gauthier; Alexopoulos, Theodoros; Alhroob, Muhammad; Alimonti, Gianluca; Alio, Lion; Alison, John; Allbrooke, Benedict; Allison, Lee John; Allport, Phillip; Almond, John; Aloisio, Alberto; Alonso, Alejandro; Alonso, Francisco; Alpigiani, Cristiano; Altheimer, Andrew David; Alvarez Gonzalez, Barbara; Alviggi, Mariagrazia; Amako, Katsuya; Amaral Coutinho, Yara; Amelung, Christoph; Amidei, Dante; Amor Dos Santos, Susana Patricia; Amorim, Antonio; Amoroso, Simone; Amram, Nir; Amundsen, Glenn; Anastopoulos, Christos; Ancu, Lucian Stefan; Andari, Nansi; Andeen, Timothy; Anders, Christoph Falk; Anders, Gabriel; Anderson, Kelby; Andreazza, Attilio; Andrei, George Victor; Anduaga, Xabier; Angelidakis, Stylianos; Angelozzi, Ivan; Anger, Philipp; Angerami, Aaron; Anghinolfi, Francis; Anisenkov, Alexey; Anjos, Nuno; Annovi, Alberto; Antonaki, Ariadni; Antonelli, Mario; Antonov, Alexey; Antos, Jaroslav; Anulli, Fabio; Aoki, Masato; Aperio Bella, Ludovica; Apolle, Rudi; Arabidze, Giorgi; Aracena, Ignacio; Arai, Yasuo; Araque, Juan Pedro; Arce, Ayana; Arguin, Jean-Francois; Argyropoulos, Spyridon; Arik, Metin; Armbruster, Aaron James; Arnaez, Olivier; Arnal, Vanessa; Arnold, Hannah; Arratia, Miguel; Arslan, Ozan; Artamonov, Andrei; Artoni, Giacomo; Asai, Shoji; Asbah, Nedaa; Ashkenazi, Adi; Åsman, Barbro; Asquith, Lily; Assamagan, Ketevi; Astalos, Robert; Atkinson, Markus; Atlay, Naim Bora; Auerbach, Benjamin; Augsten, Kamil; Aurousseau, Mathieu; Avolio, Giuseppe; Azuelos, Georges; Azuma, Yuya; Baak, Max; Baas, Alessandra; Bacci, Cesare; Bachacou, Henri; Bachas, Konstantinos; Backes, Moritz; Backhaus, Malte; Backus Mayes, John; Badescu, Elisabeta; Bagiacchi, Paolo; Bagnaia, Paolo; Bai, Yu; Bain, Travis; Baines, John; Baker, Oliver Keith; Balek, Petr; Balli, Fabrice; Banas, Elzbieta; Banerjee, Swagato; Bannoura, Arwa A E; Bansal, Vikas; Bansil, Hardeep Singh; Barak, Liron; Baranov, Sergei; Barberio, Elisabetta Luigia; Barberis, Dario; Barbero, Marlon; Barillari, Teresa; Barisonzi, Marcello; Barklow, Timothy; Barlow, Nick; Barnett, Bruce; Barnett, Michael; Barnovska, Zuzana; Baroncelli, Antonio; Barone, Gaetano; Barr, Alan; Barreiro, Fernando; Barreiro Guimarães da Costa, João; Bartoldus, Rainer; Barton, Adam Edward; Bartos, Pavol; Bartsch, Valeria; Bassalat, Ahmed; Basye, Austin; Bates, Richard; Batkova, Lucia; Batley, Richard; Battaglia, Marco; Battistin, Michele; Bauer, Florian; Bawa, Harinder Singh; Beau, Tristan; Beauchemin, Pierre-Hugues; Beccherle, Roberto; Bechtle, Philip; Beck, Hans Peter; Becker, Anne Kathrin; Becker, Sebastian; Beckingham, Matthew; Becot, Cyril; Beddall, Andrew; Beddall, Ayda; Bedikian, Sourpouhi; Bednyakov, Vadim; Bee, Christopher; Beemster, Lars; Beermann, Thomas; Begel, Michael; Behr, Katharina; Belanger-Champagne, Camille; Bell, Paul; Bell, William; Bella, Gideon; Bellagamba, Lorenzo; Bellerive, Alain; Bellomo, Massimiliano; Belotskiy, Konstantin; Beltramello, Olga; Benary, Odette; Benchekroun, Driss; Bendtz, Katarina; Benekos, Nektarios; Benhammou, Yan; Benhar Noccioli, Eleonora; Benitez Garcia, Jorge-Armando; Benjamin, Douglas; Bensinger, James; Benslama, Kamal; Bentvelsen, Stan; Berge, David; Bergeaas Kuutmann, Elin; Berger, Nicolas; Berghaus, Frank; Beringer, Jürg; Bernard, Clare; Bernat, Pauline; Bernius, Catrin; Bernlochner, Florian Urs; Berry, Tracey; Berta, Peter; Bertella, Claudia; Bertoli, Gabriele; Bertolucci, Federico; Bertsche, David; Besana, Maria Ilaria; Besjes, Geert-Jan; Bessidskaia, Olga; Bessner, Martin Florian; Besson, Nathalie; Betancourt, Christopher; Bethke, Siegfried; Bhimji, Wahid; Bianchi, Riccardo-Maria; Bianchini, Louis; Bianco, Michele; Biebel, Otmar; Bieniek, Stephen Paul; Bierwagen, Katharina; Biesiada, Jed; Biglietti, Michela; Bilbao De Mendizabal, Javier; Bilokon, Halina; Bindi, Marcello; Binet, Sebastien; Bingul, Ahmet; Bini, Cesare; Black, Curtis; Black, James; Black, Kevin; Blackburn, Daniel; Blair, Robert; Blanchard, Jean-Baptiste; Blazek, Tomas; Bloch, Ingo; Blocker, Craig; Blum, Walter; Blumenschein, Ulrike; Bobbink, Gerjan; Bobrovnikov, Victor; Bocchetta, Simona Serena; Bocci, Andrea; Bock, Christopher; Boddy, Christopher Richard; Boehler, Michael; Boek, Thorsten Tobias; Bogaerts, Joannes Andreas; Bogdanchikov, Alexander; Bogouch, Andrei; Bohm, Christian; Bohm, Jan; Boisvert, Veronique; Bold, Tomasz; Boldea, Venera; Boldyrev, Alexey; Bomben, Marco; Bona, Marcella; Boonekamp, Maarten; Borisov, Anatoly; Borissov, Guennadi; Borri, Marcello; Borroni, Sara; Bortfeldt, Jonathan; Bortolotto, Valerio; Bos, Kors; Boscherini, Davide; Bosman, Martine; Boterenbrood, Hendrik; Boudreau, Joseph; Bouffard, Julian; Bouhova-Thacker, Evelina Vassileva; Boumediene, Djamel Eddine; Bourdarios, Claire; Bousson, Nicolas; Boutouil, Sara; Boveia, Antonio; Boyd, James; Boyko, Igor; Bracinik, Juraj; Brandt, Andrew; Brandt, Gerhard; Brandt, Oleg; Bratzler, Uwe; Brau, Benjamin; Brau, James; Braun, Helmut; Brazzale, Simone Federico; Brelier, Bertrand; Brendlinger, Kurt; Brennan, Amelia Jean; Brenner, Richard; Bressler, Shikma; Bristow, Kieran; Bristow, Timothy Michael; Britton, Dave; Brochu, Frederic; Brock, Ian; Brock, Raymond; Bromberg, Carl; Bronner, Johanna; Brooijmans, Gustaaf; Brooks, Timothy; Brooks, William; Brosamer, Jacquelyn; Brost, Elizabeth; Brown, Jonathan; Bruckman de Renstrom, Pawel; Bruncko, Dusan; Bruneliere, Renaud; Brunet, Sylvie; Bruni, Alessia; Bruni, Graziano; Bruschi, Marco; Bryngemark, Lene; Buanes, Trygve; Buat, Quentin; Bucci, Francesca; Buchholz, Peter; Buckingham, Ryan; Buckley, Andrew; Buda, Stelian Ioan; Budagov, Ioulian; Buehrer, Felix; Bugge, Lars; Bugge, Magnar Kopangen; Bulekov, Oleg; Bundock, Aaron Colin; Burckhart, Helfried; Burdin, Sergey; Burghgrave, Blake; Burke, Stephen; Burmeister, Ingo; Busato, Emmanuel; Büscher, Daniel; Büscher, Volker; Bussey, Peter; Buszello, Claus-Peter; Butler, Bart; Butler, John; Butt, Aatif Imtiaz; Buttar, Craig; Butterworth, Jonathan; Butti, Pierfrancesco; Buttinger, William; Buzatu, Adrian; Byszewski, Marcin; Cabrera Urbán, Susana; Caforio, Davide; Cakir, Orhan; Calafiura, Paolo; Calandri, Alessandro; Calderini, Giovanni; Calfayan, Philippe; Calkins, Robert; Caloba, Luiz; Calvet, David; Calvet, Samuel; Camacho Toro, Reina; Camarda, Stefano; Cameron, David; Caminada, Lea Michaela; Caminal Armadans, Roger; Campana, Simone; Campanelli, Mario; Campoverde, Angel; Canale, Vincenzo; Canepa, Anadi; Cano Bret, Marc; Cantero, Josu; Cantrill, Robert; Cao, Tingting; Capeans Garrido, Maria Del Mar; Caprini, Irinel; Caprini, Mihai; Capua, Marcella; Caputo, Regina; Cardarelli, Roberto; Carli, Tancredi; Carlino, Gianpaolo; Carminati, Leonardo; Caron, Sascha; Carquin, Edson; Carrillo-Montoya, German D; Carter, Janet; Carvalho, João; Casadei, Diego; Casado, Maria Pilar; Casolino, Mirkoantonio; Castaneda-Miranda, Elizabeth; Castelli, Angelantonio; Castillo Gimenez, Victoria; Castro, Nuno Filipe; Catastini, Pierluigi; Catinaccio, Andrea; Catmore, James; Cattai, Ariella; Cattani, Giordano; Caughron, Seth; Cavaliere, Viviana; Cavalli, Donatella; Cavalli-Sforza, Matteo; Cavasinni, Vincenzo; Ceradini, Filippo; Cerio, Benjamin; Cerny, Karel; Santiago Cerqueira, Augusto; Cerri, Alessandro; Cerrito, Lucio; Cerutti, Fabio; Cerv, Matevz; Cervelli, Alberto; Cetin, Serkant Ali; Chafaq, Aziz; Chakraborty, Dhiman; Chalupkova, Ina; Chang, Philip; Chapleau, Bertrand; Chapman, John Derek; Charfeddine, Driss; Charlton, Dave; Chau, Chav Chhiv; Chavez Barajas, Carlos Alberto; Cheatham, Susan; Chegwidden, Andrew; Chekanov, Sergei; Chekulaev, Sergey; Chelkov, Gueorgui; Chelstowska, Magda Anna; Chen, Chunhui; Chen, Hucheng; Chen, Karen; Chen, Liming; Chen, Shenjian; Chen, Xin; Chen, Yujiao; Cheng, Hok Chuen; Cheng, Yangyang; Cheplakov, Alexander; Cherkaoui El Moursli, Rajaa; Chernyatin, Valeriy; Cheu, Elliott; Chevalier, Laurent; Chiarella, Vitaliano; Chiefari, Giovanni; Childers, John Taylor; Chilingarov, Alexandre; Chiodini, Gabriele; Chisholm, Andrew; Chislett, Rebecca Thalatta; Chitan, Adrian; Chizhov, Mihail; Chouridou, Sofia; Chow, Bonnie Kar Bo; Chromek-Burckhart, Doris; Chu, Ming-Lee; Chudoba, Jiri; Chwastowski, Janusz; Chytka, Ladislav; Ciapetti, Guido; Ciftci, Abbas Kenan; Ciftci, Rena; Cinca, Diane; Cindro, Vladimir; Ciocio, Alessandra; Cirkovic, Predrag; Citron, Zvi Hirsh; Citterio, Mauro; Ciubancan, Mihai; Clark, Allan G; Clark, Philip James; Clarke, Robert; Cleland, Bill; Clemens, Jean-Claude; Clement, Christophe; Coadou, Yann; Cobal, Marina; Coccaro, Andrea; Cochran, James H; Coffey, Laurel; Cogan, Joshua Godfrey; Coggeshall, James; Cole, Brian; Cole, Stephen; Colijn, Auke-Pieter; Collot, Johann; Colombo, Tommaso; Colon, German; Compostella, Gabriele; Conde Muiño, Patricia; Coniavitis, Elias; Conidi, Maria Chiara; Connell, Simon Henry; Connelly, Ian; Consonni, Sofia Maria; Consorti, Valerio; Constantinescu, Serban; Conta, Claudio; Conti, Geraldine; Conventi, Francesco; Cooke, Mark; Cooper, Ben; Cooper-Sarkar, Amanda; Cooper-Smith, Neil; Copic, Katherine; Cornelissen, Thijs; Corradi, Massimo; Corriveau, Francois; Corso-Radu, Alina; Cortes-Gonzalez, Arely; Cortiana, Giorgio; Costa, Giuseppe; Costa, María José; Costanzo, Davide; Côté, David; Cottin, Giovanna; Cowan, Glen; Cox, Brian; Cranmer, Kyle; Cree, Graham; Crépé-Renaudin, Sabine; Crescioli, Francesco; Cribbs, Wayne Allen; Crispin Ortuzar, Mireia; Cristinziani, Markus; Croft, Vince; Crosetti, Giovanni; Cuciuc, Constantin-Mihai; Cuhadar Donszelmann, Tulay; Cummings, Jane; Curatolo, Maria; Cuthbert, Cameron; Czirr, Hendrik; Czodrowski, Patrick; Czyczula, Zofia; D'Auria, Saverio; D'Onofrio, Monica; Da Cunha Sargedas De Sousa, Mario Jose; Da Via, Cinzia; Dabrowski, Wladyslaw; Dafinca, Alexandru; Dai, Tiesheng; Dale, Orjan; Dallaire, Frederick; Dallapiccola, Carlo; Dam, Mogens; Daniells, Andrew Christopher; Dano Hoffmann, Maria; Dao, Valerio; Darbo, Giovanni; Darmora, Smita; Dassoulas, James; Dattagupta, Aparajita; Davey, Will; David, Claire; Davidek, Tomas; Davies, Eleanor; Davies, Merlin; Davignon, Olivier; Davison, Adam; Davison, Peter; Davygora, Yuriy; Dawe, Edmund; Dawson, Ian; Daya-Ishmukhametova, Rozmin; De, Kaushik; de Asmundis, Riccardo; De Castro, Stefano; De Cecco, Sandro; De Groot, Nicolo; de Jong, Paul; De la Torre, Hector; De Lorenzi, Francesco; De Nooij, Lucie; De Pedis, Daniele; De Salvo, Alessandro; De Sanctis, Umberto; De Santo, Antonella; De Vivie De Regie, Jean-Baptiste; Dearnaley, William James; Debbe, Ramiro; Debenedetti, Chiara; Dechenaux, Benjamin; Dedovich, Dmitri; Deigaard, Ingrid; Del Peso, Jose; Del Prete, Tarcisio; Deliot, Frederic; Delitzsch, Chris Malena; Deliyergiyev, Maksym; Dell'Acqua, Andrea; Dell'Asta, Lidia; Dell'Orso, Mauro; Della Pietra, Massimo; della Volpe, Domenico; Delmastro, Marco; Delsart, Pierre-Antoine; Deluca, Carolina; Demers, Sarah; Demichev, Mikhail; Demilly, Aurelien; Denisov, Sergey; Derendarz, Dominik; Derkaoui, Jamal Eddine; Derue, Frederic; Dervan, Paul; Desch, Klaus Kurt; Deterre, Cecile; Deviveiros, Pier-Olivier; Dewhurst, Alastair; Dhaliwal, Saminder; Di Ciaccio, Anna; Di Ciaccio, Lucia; Di Domenico, Antonio; Di Donato, Camilla; Di Girolamo, Alessandro; Di Girolamo, Beniamino; Di Mattia, Alessandro; Di Micco, Biagio; Di Nardo, Roberto; Di Simone, Andrea; Di Sipio, Riccardo; Di Valentino, David; Dias, Flavia; Diaz, Marco Aurelio; Diehl, Edward; Dietrich, Janet; Dietzsch, Thorsten; Diglio, Sara; Dimitrievska, Aleksandra; Dingfelder, Jochen; Dionisi, Carlo; Dita, Petre; Dita, Sanda; Dittus, Fridolin; Djama, Fares; Djobava, Tamar; Barros do Vale, Maria Aline; Do Valle Wemans, André; Doan, Thi Kieu Oanh; Dobos, Daniel; Doglioni, Caterina; Doherty, Tom; Dohmae, Takeshi; Dolejsi, Jiri; Dolezal, Zdenek; Dolgoshein, Boris; Donadelli, Marisilvia; Donati, Simone; Dondero, Paolo; Donini, Julien; Dopke, Jens; Doria, Alessandra; Dova, Maria-Teresa; Doyle, Tony; Dris, Manolis; Dubbert, Jörg; Dube, Sourabh; Dubreuil, Emmanuelle; Duchovni, Ehud; Duckeck, Guenter; Ducu, Otilia Anamaria; Duda, Dominik; Dudarev, Alexey; Dudziak, Fanny; Duflot, Laurent; Duguid, Liam; Dührssen, Michael; Dunford, Monica; Duran Yildiz, Hatice; Düren, Michael; Durglishvili, Archil; Dwuznik, Michal; Dyndal, Mateusz; Ebke, Johannes; Edson, William; Edwards, Nicholas Charles; Ehrenfeld, Wolfgang; Eifert, Till; Eigen, Gerald; Einsweiler, Kevin; Ekelof, Tord; El Kacimi, Mohamed; Ellert, Mattias; Elles, Sabine; Ellinghaus, Frank; Ellis, Nicolas; Elmsheuser, Johannes; Elsing, Markus; Emeliyanov, Dmitry; Enari, Yuji; Endner, Oliver Chris; Endo, Masaki; Engelmann, Roderich; Erdmann, Johannes; Ereditato, Antonio; Eriksson, Daniel; Ernis, Gunar; Ernst, Jesse; Ernst, Michael; Ernwein, Jean; Errede, Deborah; Errede, Steven; Ertel, Eugen; Escalier, Marc; Esch, Hendrik; Escobar, Carlos; Esposito, Bellisario; Etienvre, Anne-Isabelle; Etzion, Erez; Evans, Hal; Ezhilov, Alexey; Fabbri, Laura; Facini, Gabriel; Fakhrutdinov, Rinat; Falciano, Speranza; Falla, Rebecca Jane; Faltova, Jana; Fang, Yaquan; Fanti, Marcello; Farbin, Amir; Farilla, Addolorata; Farooque, Trisha; Farrell, Steven; Farrington, Sinead; Farthouat, Philippe; Fassi, Farida; Fassnacht, Patrick; Fassouliotis, Dimitrios; Favareto, Andrea; Fayard, Louis; Federic, Pavol; Fedin, Oleg; Fedorko, Wojciech; Fehling-Kaschek, Mirjam; Feigl, Simon; Feligioni, Lorenzo; Feng, Cunfeng; Feng, Eric; Feng, Haolu; Fenyuk, Alexander; Fernandez Perez, Sonia; Ferrag, Samir; Ferrando, James; Ferrari, Arnaud; Ferrari, Pamela; Ferrari, Roberto; Ferreira de Lima, Danilo Enoque; Ferrer, Antonio; Ferrere, Didier; Ferretti, Claudio; Ferretto Parodi, Andrea; Fiascaris, Maria; Fiedler, Frank; Filipčič, Andrej; Filipuzzi, Marco; Filthaut, Frank; Fincke-Keeler, Margret; Finelli, Kevin Daniel; Fiolhais, Miguel; Fiorini, Luca; Firan, Ana; Fischer, Adam; Fischer, Julia; Fisher, Wade Cameron; Fitzgerald, Eric Andrew; Flechl, Martin; Fleck, Ivor; Fleischmann, Philipp; Fleischmann, Sebastian; Fletcher, Gareth Thomas; Fletcher, Gregory; Flick, Tobias; Floderus, Anders; Flores Castillo, Luis; Florez Bustos, Andres Carlos; Flowerdew, Michael; Formica, Andrea; Forti, Alessandra; Fortin, Dominique; Fournier, Daniel; Fox, Harald; Fracchia, Silvia; Francavilla, Paolo; Franchini, Matteo; Franchino, Silvia; Francis, David; Franklin, Melissa; Franz, Sebastien; Fraternali, Marco; French, Sky; Friedrich, Conrad; Friedrich, Felix; Froidevaux, Daniel; Frost, James; Fukunaga, Chikara; Fullana Torregrosa, Esteban; Fulsom, Bryan Gregory; Fuster, Juan; Gabaldon, Carolina; Gabizon, Ofir; Gabrielli, Alessandro; Gabrielli, Andrea; Gadatsch, Stefan; Gadomski, Szymon; Gagliardi, Guido; Gagnon, Pauline; Galea, Cristina; Galhardo, Bruno; Gallas, Elizabeth; Gallo, Valentina Santina; Gallop, Bruce; Gallus, Petr; Galster, Gorm Aske Gram Krohn; Gan, KK; Gandrajula, Reddy Pratap; Gao, Jun; Gao, Yongsheng; Garay Walls, Francisca; Garberson, Ford; García, Carmen; García Navarro, José Enrique; Garcia-Sciveres, Maurice; Gardner, Robert; Garelli, Nicoletta; Garonne, Vincent; Gatti, Claudio; Gaudio, Gabriella; Gaur, Bakul; Gauthier, Lea; Gauzzi, Paolo; Gavrilenko, Igor; Gay, Colin; Gaycken, Goetz; Gazis, Evangelos; Ge, Peng; Gecse, Zoltan; Gee, Norman; Geerts, Daniël Alphonsus Adrianus; Geich-Gimbel, Christoph; Gellerstedt, Karl; Gemme, Claudia; Gemmell, Alistair; Genest, Marie-Hélène; Gentile, Simonetta; George, Matthias; George, Simon; Gerbaudo, Davide; Gershon, Avi; Ghazlane, Hamid; Ghodbane, Nabil; Giacobbe, Benedetto; Giagu, Stefano; Giangiobbe, Vincent; Giannetti, Paola; Gianotti, Fabiola; Gibbard, Bruce; Gibson, Stephen; Gilchriese, Murdock; Gillam, Thomas; Gillberg, Dag; Gilles, Geoffrey; Gingrich, Douglas; Giokaris, Nikos; Giordani, MarioPaolo; Giordano, Raffaele; Giorgi, Filippo Maria; Giorgi, Francesco Michelangelo; Giraud, Pierre-Francois; Giugni, Danilo; Giuliani, Claudia; Giulini, Maddalena; Gjelsten, Børge Kile; Gkaitatzis, Stamatios; Gkialas, Ioannis; Gladilin, Leonid; Glasman, Claudia; Glatzer, Julian; Glaysher, Paul; Glazov, Alexandre; Glonti, George; Goblirsch-Kolb, Maximilian; Goddard, Jack Robert; Godfrey, Jennifer; Godlewski, Jan; Goeringer, Christian; Goldfarb, Steven; Golling, Tobias; Golubkov, Dmitry; Gomes, Agostinho; Gomez Fajardo, Luz Stella; Gonçalo, Ricardo; Goncalves Pinto Firmino Da Costa, Joao; Gonella, Laura; González de la Hoz, Santiago; Gonzalez Parra, Garoe; Gonzalez-Sevilla, Sergio; Goossens, Luc; Gorbounov, Petr Andreevich; Gordon, Howard; Gorelov, Igor; Gorini, Benedetto; Gorini, Edoardo; Gorišek, Andrej; Gornicki, Edward; Goshaw, Alfred; Gössling, Claus; Gostkin, Mikhail Ivanovitch; Gouighri, Mohamed; Goujdami, Driss; Goulette, Marc Phillippe; Goussiou, Anna; Goy, Corinne; Gozpinar, Serdar; Grabas, Herve Marie Xavier; Graber, Lars; Grabowska-Bold, Iwona; Grafström, Per; Grahn, Karl-Johan; Gramling, Johanna; Gramstad, Eirik; Grancagnolo, Sergio; Grassi, Valerio; Gratchev, Vadim; Gray, Heather; Graziani, Enrico; Grebenyuk, Oleg; Greenwood, Zeno Dixon; Gregersen, Kristian; Gregor, Ingrid-Maria; Grenier, Philippe; Griffiths, Justin; Grillo, Alexander; Grimm, Kathryn; Grinstein, Sebastian; Gris, Philippe Luc Yves; Grishkevich, Yaroslav; Grivaz, Jean-Francois; Grohs, Johannes Philipp; Grohsjean, Alexander; Gross, Eilam; Grosse-Knetter, Joern; Grossi, Giulio Cornelio; Groth-Jensen, Jacob; Grout, Zara Jane; Guan, Liang; Guescini, Francesco; Guest, Daniel; Gueta, Orel; Guicheney, Christophe; Guido, Elisa; Guillemin, Thibault; Guindon, Stefan; Gul, Umar; Gumpert, Christian; Gunther, Jaroslav; Guo, Jun; Gupta, Shaun; Gutierrez, Phillip; Gutierrez Ortiz, Nicolas Gilberto; Gutschow, Christian; Guttman, Nir; Guyot, Claude; Gwenlan, Claire; Gwilliam, Carl; Haas, Andy; Haber, Carl; Hadavand, Haleh Khani; Haddad, Nacim; Haefner, Petra; Hageböck, Stephan; Hajduk, Zbigniew; Hakobyan, Hrachya; Haleem, Mahsana; Hall, David; Halladjian, Garabed; Hamacher, Klaus; Hamal, Petr; Hamano, Kenji; Hamer, Matthias; Hamilton, Andrew; Hamilton, Samuel; Hamnett, Phillip George; Han, Liang; Hanagaki, Kazunori; Hanawa, Keita; Hance, Michael; Hanke, Paul; Hanna, Remie; Hansen, Jørgen Beck; Hansen, Jorn Dines; Hansen, Peter Henrik; Hara, Kazuhiko; Hard, Andrew; Harenberg, Torsten; Hariri, Faten; Harkusha, Siarhei; Harper, Devin; Harrington, Robert; Harris, Orin; Harrison, Paul Fraser; Hartjes, Fred; Hasegawa, Satoshi; Hasegawa, Yoji; Hasib, A; Hassani, Samira; Haug, Sigve; Hauschild, Michael; Hauser, Reiner; Havranek, Miroslav; Hawkes, Christopher; Hawkings, Richard John; Hawkins, Anthony David; Hayashi, Takayasu; Hayden, Daniel; Hays, Chris; Hayward, Helen; Haywood, Stephen; Head, Simon; Heck, Tobias; Hedberg, Vincent; Heelan, Louise; Heim, Sarah; Heim, Timon; Heinemann, Beate; Heinrich, Lukas; Hejbal, Jiri; Helary, Louis; Heller, Claudio; Heller, Matthieu; Hellman, Sten; Hellmich, Dennis; Helsens, Clement; Henderson, James; Henderson, Robert; Heng, Yang; Hengler, Christopher; Henrichs, Anna; Henriques Correia, Ana Maria; Henrot-Versille, Sophie; Hensel, Carsten; Herbert, Geoffrey Henry; Hernández Jiménez, Yesenia; Herrberg-Schubert, Ruth; Herten, Gregor; Hertenberger, Ralf; Hervas, Luis; Hesketh, Gavin Grant; Hessey, Nigel; Hickling, Robert; Higón-Rodriguez, Emilio; Hill, Ewan; Hill, John; Hiller, Karl Heinz; Hillert, Sonja; Hillier, Stephen; Hinchliffe, Ian; Hines, Elizabeth; Hirose, Minoru; Hirschbuehl, Dominic; Hobbs, John; Hod, Noam; Hodgkinson, Mark; Hodgson, Paul; Hoecker, Andreas; Hoeferkamp, Martin; Hoffman, Julia; Hoffmann, Dirk; Hofmann, Julia Isabell; Hohlfeld, Marc; Holmes, Tova Ray; Hong, Tae Min; Hooft van Huysduynen, Loek; Hostachy, Jean-Yves; Hou, Suen; Hoummada, Abdeslam; Howard, Jacob; Howarth, James; Hrabovsky, Miroslav; Hristova, Ivana; Hrivnac, Julius; Hryn'ova, Tetiana; Hsu, Catherine; Hsu, Pai-hsien Jennifer; Hsu, Shih-Chieh; Hu, Diedi; Hu, Xueye; Huang, Yanping; Hubacek, Zdenek; Hubaut, Fabrice; Huegging, Fabian; Huffman, Todd Brian; Hughes, Emlyn; Hughes, Gareth; Huhtinen, Mika; Hülsing, Tobias Alexander; Hurwitz, Martina; Huseynov, Nazim; Huston, Joey; Huth, John; Iacobucci, Giuseppe; Iakovidis, Georgios; Ibragimov, Iskander; Iconomidou-Fayard, Lydia; Ideal, Emma; Iengo, Paolo; Igonkina, Olga; Iizawa, Tomoya; Ikegami, Yoichi; Ikematsu, Katsumasa; Ikeno, Masahiro; Ilchenko, Iurii; Iliadis, Dimitrios; Ilic, Nikolina; Inamaru, Yuki; Ince, Tayfun; Ioannou, Pavlos; Iodice, Mauro; Iordanidou, Kalliopi; Ippolito, Valerio; Irles Quiles, Adrian; Isaksson, Charlie; Ishino, Masaya; Ishitsuka, Masaki; Ishmukhametov, Renat; Issever, Cigdem; Istin, Serhat; Iturbe Ponce, Julia Mariana; Iuppa, Roberto; Ivarsson, Jenny; Iwanski, Wieslaw; Iwasaki, Hiroyuki; Izen, Joseph; Izzo, Vincenzo; Jackson, Brett; Jackson, Matthew; Jackson, Paul; Jaekel, Martin; Jain, Vivek; Jakobs, Karl; Jakobsen, Sune; Jakoubek, Tomas; Jakubek, Jan; Jamin, David Olivier; Jana, Dilip; Jansen, Eric; Jansen, Hendrik; Janssen, Jens; Janus, Michel; Jarlskog, Göran; Javadov, Namig; Javůrek, Tomáš; Jeanty, Laura; Jejelava, Juansher; Jeng, Geng-yuan; Jennens, David; Jenni, Peter; Jentzsch, Jennifer; Jeske, Carl; Jézéquel, Stéphane; Ji, Haoshuang; Ji, Weina; Jia, Jiangyong; Jiang, Yi; Jimenez Belenguer, Marcos; Jin, Shan; Jinaru, Adam; Jinnouchi, Osamu; Joergensen, Morten Dam; Johansson, Erik; Johansson, Per; Johns, Kenneth; Jon-And, Kerstin; Jones, Graham; Jones, Roger; Jones, Tim; Jongmanns, Jan; Jorge, Pedro; Joshi, Kiran Daniel; Jovicevic, Jelena; Ju, Xiangyang; Jung, Christian; Jungst, Ralph Markus; Jussel, Patrick; Juste Rozas, Aurelio; Kaci, Mohammed; Kaczmarska, Anna; Kado, Marumi; Kagan, Harris; Kagan, Michael; Kajomovitz, Enrique; Kalderon, Charles William; Kama, Sami; Kamenshchikov, Andrey; Kanaya, Naoko; Kaneda, Michiru; Kaneti, Steven; Kantserov, Vadim; Kanzaki, Junichi; Kaplan, Benjamin; Kapliy, Anton; Kar, Deepak; Karakostas, Konstantinos; Karastathis, Nikolaos; Karnevskiy, Mikhail; Karpov, Sergey; Karpova, Zoya; Karthik, Krishnaiyengar; Kartvelishvili, Vakhtang; Karyukhin, Andrey; Kashif, Lashkar; Kasieczka, Gregor; Kass, Richard; Kastanas, Alex; Kataoka, Yousuke; Katre, Akshay; Katzy, Judith; Kaushik, Venkatesh; Kawagoe, Kiyotomo; Kawamoto, Tatsuo; Kawamura, Gen; Kazama, Shingo; Kazanin, Vassili; Kazarinov, Makhail; Keeler, Richard; Kehoe, Robert; Keil, Markus; Keller, John; Kempster, Jacob Julian; Keoshkerian, Houry; Kepka, Oldrich; Kerševan, Borut Paul; Kersten, Susanne; Kessoku, Kohei; Keung, Justin; Khalil-zada, Farkhad; Khandanyan, Hovhannes; Khanov, Alexander; Khodinov, Alexander; Khomich, Andrei; Khoo, Teng Jian; Khoriauli, Gia; Khoroshilov, Andrey; Khovanskiy, Valery; Khramov, Evgeniy; Khubua, Jemal; Kim, Hee Yeun; Kim, Hyeon Jin; Kim, Shinhong; Kimura, Naoki; Kind, Oliver; King, Barry; King, Matthew; King, Robert Steven Beaufoy; King, Samuel Burton; Kirk, Julie; Kiryunin, Andrey; Kishimoto, Tomoe; Kisielewska, Danuta; Kiss, Florian; Kittelmann, Thomas; Kiuchi, Kenji; Kladiva, Eduard; Klein, Max; Klein, Uta; Kleinknecht, Konrad; Klimek, Pawel; Klimentov, Alexei; Klingenberg, Reiner; Klinger, Joel Alexander; Klioutchnikova, Tatiana; Klok, Peter; Kluge, Eike-Erik; Kluit, Peter; Kluth, Stefan; Kneringer, Emmerich; Knoops, Edith; Knue, Andrea; Kobayashi, Dai; Kobayashi, Tomio; Kobel, Michael; Kocian, Martin; Kodys, Peter; Koevesarki, Peter; Koffas, Thomas; Koffeman, Els; Kogan, Lucy Anne; Kohlmann, Simon; Kohout, Zdenek; Kohriki, Takashi; Koi, Tatsumi; Kolanoski, Hermann; Koletsou, Iro; Koll, James; Komar, Aston; Komori, Yuto; Kondo, Takahiko; Kondrashova, Nataliia; Köneke, Karsten; König, Adriaan; König, Sebastian; Kono, Takanori; Konoplich, Rostislav; Konstantinidis, Nikolaos; Kopeliansky, Revital; Koperny, Stefan; Köpke, Lutz; Kopp, Anna Katharina; Korcyl, Krzysztof; Kordas, Kostantinos; Korn, Andreas; Korol, Aleksandr; Korolkov, Ilya; Korolkova, Elena; Korotkov, Vladislav; Kortner, Oliver; Kortner, Sandra; Kostyukhin, Vadim; Kotov, Vladislav; Kotwal, Ashutosh; Kourkoumelis, Christine; Kouskoura, Vasiliki; Koutsman, Alex; Kowalewski, Robert Victor; Kowalski, Tadeusz; Kozanecki, Witold; Kozhin, Anatoly; Kral, Vlastimil; Kramarenko, Viktor; Kramberger, Gregor; Krasnopevtsev, Dimitriy; Krasny, Mieczyslaw Witold; Krasznahorkay, Attila; Kraus, Jana; Kravchenko, Anton; Kreiss, Sven; Kretz, Moritz; Kretzschmar, Jan; Kreutzfeldt, Kristof; Krieger, Peter; Kroeninger, Kevin; Kroha, Hubert; Kroll, Joe; Kroseberg, Juergen; Krstic, Jelena; Kruchonak, Uladzimir; Krüger, Hans; Kruker, Tobias; Krumnack, Nils; Krumshteyn, Zinovii; Kruse, Amanda; Kruse, Mark; Kruskal, Michael; Kubota, Takashi; Kuday, Sinan; Kuehn, Susanne; Kugel, Andreas; Kuhl, Andrew; Kuhl, Thorsten; Kukhtin, Victor; Kulchitsky, Yuri; Kuleshov, Sergey; Kuna, Marine; Kunkle, Joshua; Kupco, Alexander; Kurashige, Hisaya; Kurochkin, Yurii; Kurumida, Rie; Kus, Vlastimil; Kuwertz, Emma Sian; Kuze, Masahiro; Kvita, Jiri; La Rosa, Alessandro; La Rotonda, Laura; Lacasta, Carlos; Lacava, Francesco; Lacey, James; Lacker, Heiko; Lacour, Didier; Lacuesta, Vicente Ramón; Ladygin, Evgueni; Lafaye, Remi; Laforge, Bertrand; Lagouri, Theodota; Lai, Stanley; Laier, Heiko; Lambourne, Luke; Lammers, Sabine; Lampen, Caleb; Lampl, Walter; Lançon, Eric; Landgraf, Ulrich; Landon, Murrough; Lang, Valerie Susanne; Lankford, Andrew; Lanni, Francesco; Lantzsch, Kerstin; Laplace, Sandrine; Lapoire, Cecile; Laporte, Jean-Francois; Lari, Tommaso; Lassnig, Mario; Laurelli, Paolo; Lavrijsen, Wim; Law, Alexander; Laycock, Paul; Le, Bao Tran; Le Dortz, Olivier; Le Guirriec, Emmanuel; Le Menedeu, Eve; LeCompte, Thomas; Ledroit-Guillon, Fabienne Agnes Marie; Lee, Claire Alexandra; Lee, Hurng-Chun; Lee, Jason; Lee, Shih-Chang; Lee, Lawrence; Lefebvre, Guillaume; Lefebvre, Michel; Legger, Federica; Leggett, Charles; Lehan, Allan; Lehmacher, Marc; Lehmann Miotto, Giovanna; Lei, Xiaowen; Leight, William Axel; Leisos, Antonios; Leister, Andrew Gerard; Leite, Marco Aurelio Lisboa; Leitner, Rupert; Lellouch, Daniel; Lemmer, Boris; Leney, Katharine; Lenz, Tatjana; Lenzen, Georg; Lenzi, Bruno; Leone, Robert; Leone, Sandra; Leonhardt, Kathrin; Leonidopoulos, Christos; Leontsinis, Stefanos; Leroy, Claude; Lester, Christopher; Lester, Christopher Michael; Levchenko, Mikhail; Levêque, Jessica; Levin, Daniel; Levinson, Lorne; Levy, Mark; Lewis, Adrian; Lewis, George; Leyko, Agnieszka; Leyton, Michael; Li, Bing; Li, Bo; Li, Haifeng; Li, Ho Ling; Li, Lei; Li, Liang; Li, Shu; Li, Yichen; Liang, Zhijun; Liao, Hongbo; Liberti, Barbara; Lichard, Peter; Lie, Ki; Liebal, Jessica; Liebig, Wolfgang; Limbach, Christian; Limosani, Antonio; Lin, Simon; Lin, Tai-Hua; Linde, Frank; Lindquist, Brian Edward; Linnemann, James; Lipeles, Elliot; Lipniacka, Anna; Lisovyi, Mykhailo; Liss, Tony; Lissauer, David; Lister, Alison; Litke, Alan; Liu, Bo; Liu, Dong; Liu, Jianbei; Liu, Kun; Liu, Lulu; Liu, Miaoyuan; Liu, Minghui; Liu, Yanwen; Livan, Michele; Livermore, Sarah; Lleres, Annick; Llorente Merino, Javier; Lloyd, Stephen; Lo Sterzo, Francesco; Lobodzinska, Ewelina; Loch, Peter; Lockman, William; Loddenkoetter, Thomas; Loebinger, Fred; Loevschall-Jensen, Ask Emil; Loginov, Andrey; Loh, Chang Wei; Lohse, Thomas; Lohwasser, Kristin; Lokajicek, Milos; Lombardo, Vincenzo Paolo; Long, Brian Alexander; Long, Jonathan; Long, Robin Eamonn; Lopes, Lourenco; Lopez Mateos, David; Lopez Paredes, Brais; Lopez Paz, Ivan; Lorenz, Jeanette; Lorenzo Martinez, Narei; Losada, Marta; Loscutoff, Peter; Lou, XinChou; Lounis, Abdenour; Love, Jeremy; Love, Peter; Lowe, Andrew; Lu, Feng; Lubatti, Henry; Luci, Claudio; Lucotte, Arnaud; Luehring, Frederick; Lukas, Wolfgang; Luminari, Lamberto; Lundberg, Olof; Lund-Jensen, Bengt; Lungwitz, Matthias; Lynn, David; Lysak, Roman; Lytken, Else; Ma, Hong; Ma, Lian Liang; Maccarrone, Giovanni; Macchiolo, Anna; Machado Miguens, Joana; Macina, Daniela; Madaffari, Daniele; Madar, Romain; Maddocks, Harvey Jonathan; Mader, Wolfgang; Madsen, Alexander; Maeno, Mayuko; Maeno, Tadashi; Magradze, Erekle; Mahboubi, Kambiz; Mahlstedt, Joern; Mahmoud, Sara; Maiani, Camilla; Maidantchik, Carmen; Maier, Andreas Alexander; Maio, Amélia; Majewski, Stephanie; Makida, Yasuhiro; Makovec, Nikola; Mal, Prolay; Malaescu, Bogdan; Malecki, Pawel; Maleev, Victor; Malek, Fairouz; Mallik, Usha; Malon, David; Malone, Caitlin; Maltezos, Stavros; Malyshev, Vladimir; Malyukov, Sergei; Mamuzic, Judita; Mandelli, Beatrice; Mandelli, Luciano; Mandić, Igor; Mandrysch, Rocco; Maneira, José; Manfredini, Alessandro; Manhaes de Andrade Filho, Luciano; Manjarres Ramos, Joany Andreina; Mann, Alexander; Manning, Peter; Manousakis-Katsikakis, Arkadios; Mansoulie, Bruno; Mantifel, Rodger; Mapelli, Livio; March, Luis; Marchand, Jean-Francois; Marchiori, Giovanni; Marcisovsky, Michal; Marino, Christopher; Marjanovic, Marija; Marques, Carlos; Marroquim, Fernando; Marsden, Stephen Philip; Marshall, Zach; Marti, Lukas Fritz; Marti-Garcia, Salvador; Martin, Brian; Martin, Brian Thomas; Martin, Tim; Martin, Victoria Jane; Martin dit Latour, Bertrand; Martinez, Homero; Martinez, Mario; Martin-Haugh, Stewart; Martyniuk, Alex; Marx, Marilyn; Marzano, Francesco; Marzin, Antoine; Masetti, Lucia; Mashimo, Tetsuro; Mashinistov, Ruslan; Masik, Jiri; Maslennikov, Alexey; Massa, Ignazio; Massol, Nicolas; Mastrandrea, Paolo; Mastroberardino, Anna; Masubuchi, Tatsuya; Mättig, Peter; Mattmann, Johannes; Maurer, Julien; Maxfield, Stephen; Maximov, Dmitriy; Mazini, Rachid; Mazzaferro, Luca; Mc Goldrick, Garrin; Mc Kee, Shawn Patrick; McCarn, Allison; McCarthy, Robert; McCarthy, Tom; McCubbin, Norman; McFarlane, Kenneth; Mcfayden, Josh; Mchedlidze, Gvantsa; McMahon, Steve; McPherson, Robert; Meade, Andrew; Mechnich, Joerg; Medinnis, Michael; Meehan, Samuel; Mehlhase, Sascha; Mehta, Andrew; Meier, Karlheinz; Meineck, Christian; Meirose, Bernhard; Melachrinos, Constantinos; Mellado Garcia, Bruce Rafael; Meloni, Federico; Mengarelli, Alberto; Menke, Sven; Meoni, Evelin; Mercurio, Kevin Michael; Mergelmeyer, Sebastian; Meric, Nicolas; Mermod, Philippe; Merola, Leonardo; Meroni, Chiara; Merritt, Frank; Merritt, Hayes; Messina, Andrea; Metcalfe, Jessica; Mete, Alaettin Serhan; Meyer, Carsten; Meyer, Christopher; Meyer, Jean-Pierre; Meyer, Jochen; Middleton, Robin; Migas, Sylwia; Mijović, Liza; Mikenberg, Giora; Mikestikova, Marcela; Mikuž, Marko; Milic, Adriana; Miller, David; Mills, Corrinne; Milov, Alexander; Milstead, David; Milstein, Dmitry; Minaenko, Andrey; Minashvili, Irakli; Mincer, Allen; Mindur, Bartosz; Mineev, Mikhail; Ming, Yao; Mir, Lluisa-Maria; Mirabelli, Giovanni; Mitani, Takashi; Mitrevski, Jovan; Mitsou, Vasiliki A; Mitsui, Shingo; Miucci, Antonio; Miyagawa, Paul; Mjörnmark, Jan-Ulf; Moa, Torbjoern; Mochizuki, Kazuya; Mohapatra, Soumya; Mohr, Wolfgang; Molander, Simon; Moles-Valls, Regina; Mönig, Klaus; Monini, Caterina; Monk, James; Monnier, Emmanuel; Montejo Berlingen, Javier; Monticelli, Fernando; Monzani, Simone; Moore, Roger; Moraes, Arthur; Morange, Nicolas; Moreno, Deywis; Moreno Llácer, María; Morettini, Paolo; Morgenstern, Marcus; Morii, Masahiro; Moritz, Sebastian; Morley, Anthony Keith; Mornacchi, Giuseppe; Morris, John; Morvaj, Ljiljana; Moser, Hans-Guenther; Mosidze, Maia; Moss, Josh; Motohashi, Kazuki; Mount, Richard; Mountricha, Eleni; Mouraviev, Sergei; Moyse, Edward; Muanza, Steve; Mudd, Richard; Mueller, Felix; Mueller, James; Mueller, Klemens; Mueller, Thibaut; Mueller, Timo; Muenstermann, Daniel; Munwes, Yonathan; Murillo Quijada, Javier Alberto; Murray, Bill; Musheghyan, Haykuhi; Musto, Elisa; Myagkov, Alexey; Myska, Miroslav; Nackenhorst, Olaf; Nadal, Jordi; Nagai, Koichi; Nagai, Ryo; Nagai, Yoshikazu; Nagano, Kunihiro; Nagarkar, Advait; Nagasaka, Yasushi; Nagel, Martin; Nairz, Armin Michael; Nakahama, Yu; Nakamura, Koji; Nakamura, Tomoaki; Nakano, Itsuo; Namasivayam, Harisankar; Nanava, Gizo; Narayan, Rohin; Nattermann, Till; Naumann, Thomas; Navarro, Gabriela; Nayyar, Ruchika; Neal, Homer; Nechaeva, Polina; Neep, Thomas James; Nef, Pascal Daniel; Negri, Andrea; Negri, Guido; Negrini, Matteo; Nektarijevic, Snezana; Nelson, Andrew; Nelson, Timothy Knight; Nemecek, Stanislav; Nemethy, Peter; Nepomuceno, Andre Asevedo; Nessi, Marzio; Neubauer, Mark; Neumann, Manuel; Neves, Ricardo; Nevski, Pavel; Newman, Paul; Nguyen, Duong Hai; Nickerson, Richard; Nicolaidou, Rosy; Nicquevert, Bertrand; Nielsen, Jason; Nikiforou, Nikiforos; Nikiforov, Andriy; Nikolaenko, Vladimir; Nikolic-Audit, Irena; Nikolics, Katalin; Nikolopoulos, Konstantinos; Nilsson, Paul; Ninomiya, Yoichi; Nisati, Aleandro; Nisius, Richard; Nobe, Takuya; Nodulman, Lawrence; Nomachi, Masaharu; Nomidis, Ioannis; Norberg, Scarlet; Nordberg, Markus; Novgorodova, Olga; Nowak, Sebastian; Nozaki, Mitsuaki; Nozka, Libor; Ntekas, Konstantinos; Nunes Hanninger, Guilherme; Nunnemann, Thomas; Nurse, Emily; Nuti, Francesco; O'Brien, Brendan Joseph; O'grady, Fionnbarr; O'Neil, Dugan; O'Shea, Val; Oakham, Gerald; Oberlack, Horst; Obermann, Theresa; Ocariz, Jose; Ochi, Atsuhiko; Ochoa, Ines; Oda, Susumu; Odaka, Shigeru; Ogren, Harold; Oh, Alexander; Oh, Seog; Ohm, Christian; Ohman, Henrik; Ohshima, Takayoshi; Okamura, Wataru; Okawa, Hideki; Okumura, Yasuyuki; Okuyama, Toyonobu; Olariu, Albert; Olchevski, Alexander; Olivares Pino, Sebastian Andres; Oliveira Damazio, Denis; Oliver Garcia, Elena; Olszewski, Andrzej; Olszowska, Jolanta; Onofre, António; Onyisi, Peter; Oram, Christopher; Oreglia, Mark; Oren, Yona; Orestano, Domizia; Orlando, Nicola; Oropeza Barrera, Cristina; Orr, Robert; Osculati, Bianca; Ospanov, Rustem; Otero y Garzon, Gustavo; Otono, Hidetoshi; Ouchrif, Mohamed; Ouellette, Eric; Ould-Saada, Farid; Ouraou, Ahmimed; Oussoren, Koen Pieter; Ouyang, Qun; Ovcharova, Ana; Owen, Mark; Ozcan, Veysi Erkcan; Ozturk, Nurcan; Pachal, Katherine; Pacheco Pages, Andres; Padilla Aranda, Cristobal; Pagáčová, Martina; Pagan Griso, Simone; Paganis, Efstathios; Pahl, Christoph; Paige, Frank; Pais, Preema; Pajchel, Katarina; Palacino, Gabriel; Palestini, Sandro; Palka, Marek; Pallin, Dominique; Palma, Alberto; Palmer, Jody; Pan, Yibin; Panagiotopoulou, Evgenia; Panduro Vazquez, William; Pani, Priscilla; Panikashvili, Natalia; Panitkin, Sergey; Pantea, Dan; Paolozzi, Lorenzo; Papadopoulou, Theodora; Papageorgiou, Konstantinos; Paramonov, Alexander; Paredes Hernandez, Daniela; Parker, Michael Andrew; Parodi, Fabrizio; Parsons, John; Parzefall, Ulrich; Pasqualucci, Enrico; Passaggio, Stefano; Passeri, Antonio; Pastore, Fernanda; Pastore, Francesca; Pásztor, Gabriella; Pataraia, Sophio; Patel, Nikhul; Pater, Joleen; Patricelli, Sergio; Pauly, Thilo; Pearce, James; Pedersen, Maiken; Pedraza Lopez, Sebastian; Pedro, Rute; Peleganchuk, Sergey; Pelikan, Daniel; Peng, Haiping; Penning, Bjoern; Penwell, John; Perepelitsa, Dennis; Perez Codina, Estel; Pérez García-Estañ, María Teresa; Perez Reale, Valeria; Perini, Laura; Pernegger, Heinz; Perrino, Roberto; Peschke, Richard; Peshekhonov, Vladimir; Peters, Krisztian; Peters, Yvonne; Petersen, Brian; Petersen, Troels; Petit, Elisabeth; Petridis, Andreas; Petridou, Chariclia; Petrolo, Emilio; Petrucci, Fabrizio; Pettersson, Nora Emilia; Pezoa, Raquel; Phillips, Peter William; Piacquadio, Giacinto; Pianori, Elisabetta; Picazio, Attilio; Piccaro, Elisa; Piccinini, Maurizio; Piegaia, Ricardo; Pignotti, David; Pilcher, James; Pilkington, Andrew; Pina, João Antonio; Pinamonti, Michele; Pinder, Alex; Pinfold, James; Pingel, Almut; Pinto, Belmiro; Pires, Sylvestre; Pitt, Michael; Pizio, Caterina; Plazak, Lukas; Pleier, Marc-Andre; Pleskot, Vojtech; Plotnikova, Elena; Plucinski, Pawel; Poddar, Sahill; Podlyski, Fabrice; Poettgen, Ruth; Poggioli, Luc; Pohl, David-leon; Pohl, Martin; Polesello, Giacomo; Policicchio, Antonio; Polifka, Richard; Polini, Alessandro; Pollard, Christopher Samuel; Polychronakos, Venetios; Pommès, Kathy; Pontecorvo, Ludovico; Pope, Bernard; Popeneciu, Gabriel Alexandru; Popovic, Dragan; Poppleton, Alan; Portell Bueso, Xavier; Pospisil, Stanislav; Potamianos, Karolos; Potrap, Igor; Potter, Christina; Potter, Christopher; Poulard, Gilbert; Poveda, Joaquin; Pozdnyakov, Valery; Pralavorio, Pascal; Pranko, Aliaksandr; Prasad, Srivas; Pravahan, Rishiraj; Prell, Soeren; Price, Darren; Price, Joe; Price, Lawrence; Prieur, Damien; Primavera, Margherita; Proissl, Manuel; Prokofiev, Kirill; Prokoshin, Fedor; Protopapadaki, Eftychia-sofia; Protopopescu, Serban; Proudfoot, James; Przybycien, Mariusz; Przysiezniak, Helenka; Ptacek, Elizabeth; Puddu, Daniele; Pueschel, Elisa; Puldon, David; Purohit, Milind; Puzo, Patrick; Qian, Jianming; Qin, Gang; Qin, Yang; Quadt, Arnulf; Quarrie, David; Quayle, William; Queitsch-Maitland, Michaela; Quilty, Donnchadha; Qureshi, Anum; Radeka, Veljko; Radescu, Voica; Radhakrishnan, Sooraj Krishnan; Radloff, Peter; Rados, Pere; Ragusa, Francesco; Rahal, Ghita; Rajagopalan, Srinivasan; Rammensee, Michael; Randle-Conde, Aidan Sean; Rangel-Smith, Camila; Rao, Kanury; Rauscher, Felix; Rave, Tobias Christian; Ravenscroft, Thomas; Raymond, Michel; Read, Alexander Lincoln; Readioff, Nathan Peter; Rebuzzi, Daniela; Redelbach, Andreas; Redlinger, George; Reece, Ryan; Reeves, Kendall; Rehnisch, Laura; Reisin, Hernan; Relich, Matthew; Rembser, Christoph; Ren, Huan; Ren, Zhongliang; Renaud, Adrien; Rescigno, Marco; Resconi, Silvia; Rezanova, Olga; Reznicek, Pavel; Rezvani, Reyhaneh; Richter, Robert; Ridel, Melissa; Rieck, Patrick; Rieger, Julia; Rijssenbeek, Michael; Rimoldi, Adele; Rinaldi, Lorenzo; Ritsch, Elmar; Riu, Imma; Rizatdinova, Flera; Rizvi, Eram; Robertson, Steven; Robichaud-Veronneau, Andree; Robinson, Dave; Robinson, James; Robson, Aidan; Roda, Chiara; Rodrigues, Luis; Roe, Shaun; Røhne, Ole; Rolli, Simona; Romaniouk, Anatoli; Romano, Marino; Romero Adam, Elena; Rompotis, Nikolaos; Roos, Lydia; Ros, Eduardo; Rosati, Stefano; Rosbach, Kilian; Rose, Matthew; Rosendahl, Peter Lundgaard; Rosenthal, Oliver; Rossetti, Valerio; Rossi, Elvira; Rossi, Leonardo Paolo; Rosten, Rachel; Rotaru, Marina; Roth, Itamar; Rothberg, Joseph; Rousseau, David; Royon, Christophe; Rozanov, Alexandre; Rozen, Yoram; Ruan, Xifeng; Rubbo, Francesco; Rubinskiy, Igor; Rud, Viacheslav; Rudolph, Christian; Rudolph, Matthew Scott; Rühr, Frederik; Ruiz-Martinez, Aranzazu; Rurikova, Zuzana; Rusakovich, Nikolai; Ruschke, Alexander; Rutherfoord, John; Ruthmann, Nils; Ryabov, Yury; Rybar, Martin; Rybkin, Grigori; Ryder, Nick; Saavedra, Aldo; Sacerdoti, Sabrina; Saddique, Asif; Sadeh, Iftach; Sadrozinski, Hartmut; Sadykov, Renat; Safai Tehrani, Francesco; Sakamoto, Hiroshi; Sakurai, Yuki; Salamanna, Giuseppe; Salamon, Andrea; Saleem, Muhammad; Salek, David; Sales De Bruin, Pedro Henrique; Salihagic, Denis; Salnikov, Andrei; Salt, José; Salvachua Ferrando, Belén; Salvatore, Daniela; Salvatore, Pasquale Fabrizio; Salvucci, Antonio; Salzburger, Andreas; Sampsonidis, Dimitrios; Sanchez, Arturo; Sánchez, Javier; Sanchez Martinez, Victoria; Sandaker, Heidi; Sandbach, Ruth Laura; Sander, Heinz Georg; Sanders, Michiel; Sandhoff, Marisa; Sandoval, Tanya; Sandoval, Carlos; Sandstroem, Rikard; Sankey, Dave; Sansoni, Andrea; Santoni, Claudio; Santonico, Rinaldo; Santos, Helena; Santoyo Castillo, Itzebelt; Sapp, Kevin; Sapronov, Andrey; Saraiva, João; Sarrazin, Bjorn; Sartisohn, Georg; Sasaki, Osamu; Sasaki, Yuichi; Sauvage, Gilles; Sauvan, Emmanuel; Savard, Pierre; Savu, Dan Octavian; Sawyer, Craig; Sawyer, Lee; Saxon, David; Saxon, James; Sbarra, Carla; Sbrizzi, Antonio; Scanlon, Tim; Scannicchio, Diana; Scarcella, Mark; Scarfone, Valerio; Schaarschmidt, Jana; Schacht, Peter; Schaefer, Douglas; Schaefer, Ralph; Schaepe, Steffen; Schaetzel, Sebastian; Schäfer, Uli; Schaffer, Arthur; Schaile, Dorothee; Schamberger, R. Dean; Scharf, Veit; Schegelsky, Valery; Scheirich, Daniel; Schernau, Michael; Scherzer, Max; Schiavi, Carlo; Schieck, Jochen; Schillo, Christian; Schioppa, Marco; Schlenker, Stefan; Schmidt, Evelyn; Schmieden, Kristof; Schmitt, Christian; Schmitt, Christopher; Schmitt, Sebastian; Schneider, Basil; Schnellbach, Yan Jie; Schnoor, Ulrike; Schoeffel, Laurent; Schoening, Andre; Schoenrock, Bradley Daniel; Schorlemmer, Andre Lukas; Schott, Matthias; Schouten, Doug; Schovancova, Jaroslava; Schramm, Steven; Schreyer, Manuel; Schroeder, Christian; Schuh, Natascha; Schultens, Martin Johannes; Schultz-Coulon, Hans-Christian; Schulz, Holger; Schumacher, Markus; Schumm, Bruce; Schune, Philippe; Schwanenberger, Christian; Schwartzman, Ariel; Schwegler, Philipp; Schwemling, Philippe; Schwienhorst, Reinhard; Schwindling, Jerome; Schwindt, Thomas; Schwoerer, Maud; Sciacca, Gianfranco; Scifo, Estelle; Sciolla, Gabriella; Scott, Bill; Scuri, Fabrizio; Scutti, Federico; Searcy, Jacob; Sedov, George; Sedykh, Evgeny; Seidel, Sally; Seiden, Abraham; Seifert, Frank; Seixas, José; Sekhniaidze, Givi; Sekula, Stephen; Selbach, Karoline Elfriede; Seliverstov, Dmitry; Sellers, Graham; Semprini-Cesari, Nicola; Serfon, Cedric; Serin, Laurent; Serkin, Leonid; Serre, Thomas; Seuster, Rolf; Severini, Horst; Sfiligoj, Tina; Sforza, Federico; Sfyrla, Anna; Shabalina, Elizaveta; Shamim, Mansoora; Shan, Lianyou; Shang, Ruo-yu; Shank, James; Shapiro, Marjorie; Shatalov, Pavel; Shaw, Kate; Shehu, Ciwake Yusufu; Sherwood, Peter; Shi, Liaoshan; Shimizu, Shima; Shimmin, Chase Owen; Shimojima, Makoto; Shiyakova, Mariya; Shmeleva, Alevtina; Shochet, Mel; Short, Daniel; Shrestha, Suyog; Shulga, Evgeny; Shupe, Michael; Shushkevich, Stanislav; Sicho, Petr; Sidiropoulou, Ourania; Sidorov, Dmitri; Sidoti, Antonio; Siegert, Frank; Sijacki, Djordje; Silva, José; Silver, Yiftah; Silverstein, Daniel; Silverstein, Samuel; Simak, Vladislav; Simard, Olivier; Simic, Ljiljana; Simion, Stefan; Simioni, Eduard; Simmons, Brinick; Simoniello, Rosa; Simonyan, Margar; Sinervo, Pekka; Sinev, Nikolai; Sipica, Valentin; Siragusa, Giovanni; Sircar, Anirvan; Sisakyan, Alexei; Sivoklokov, Serguei; Sjölin, Jörgen; Sjursen, Therese; Skottowe, Hugh Philip; Skovpen, Kirill; Skubic, Patrick; Slater, Mark; Slavicek, Tomas; Sliwa, Krzysztof; Smakhtin, Vladimir; Smart, Ben; Smestad, Lillian; Smirnov, Sergei; Smirnov, Yury; Smirnova, Lidia; Smirnova, Oxana; Smith, Kenway; Smizanska, Maria; Smolek, Karel; Snesarev, Andrei; Snidero, Giacomo; Snyder, Scott; Sobie, Randall; Socher, Felix; Soffer, Abner; Soh, Dart-yin; Solans, Carlos; Solar, Michael; Solc, Jaroslav; Soldatov, Evgeny; Soldevila, Urmila; Solfaroli Camillocci, Elena; Solodkov, Alexander; Soloshenko, Alexei; Solovyanov, Oleg; Solovyev, Victor; Sommer, Philip; Song, Hong Ye; Soni, Nitesh; Sood, Alexander; Sopczak, Andre; Sopko, Bruno; Sopko, Vit; Sorin, Veronica; Sosebee, Mark; Soualah, Rachik; Soueid, Paul; Soukharev, Andrey; South, David; Spagnolo, Stefania; Spanò, Francesco; Spearman, William Robert; Spettel, Fabian; Spighi, Roberto; Spigo, Giancarlo; Spousta, Martin; Spreitzer, Teresa; Spurlock, Barry; St Denis, Richard Dante; Staerz, Steffen; Stahlman, Jonathan; Stamen, Rainer; Stanecka, Ewa; Stanek, Robert; Stanescu, Cristian; Stanescu-Bellu, Madalina; Stanitzki, Marcel Michael; Stapnes, Steinar; Starchenko, Evgeny; Stark, Jan; Staroba, Pavel; Starovoitov, Pavel; Staszewski, Rafal; Stavina, Pavel; Steinberg, Peter; Stelzer, Bernd; Stelzer, Harald Joerg; Stelzer-Chilton, Oliver; Stenzel, Hasko; Stern, Sebastian; Stewart, Graeme; Stillings, Jan Andre; Stockton, Mark; Stoebe, Michael; Stoicea, Gabriel; Stolte, Philipp; Stonjek, Stefan; Stradling, Alden; Straessner, Arno; Stramaglia, Maria Elena; Strandberg, Jonas; Strandberg, Sara; Strandlie, Are; Strauss, Emanuel; Strauss, Michael; Strizenec, Pavol; Ströhmer, Raimund; Strom, David; Stroynowski, Ryszard; Stucci, Stefania Antonia; Stugu, Bjarne; Styles, Nicholas Adam; Su, Dong; Su, Jun; Subramania, Halasya Siva; Subramaniam, Rajivalochan; Succurro, Antonella; Sugaya, Yorihito; Suhr, Chad; Suk, Michal; Sulin, Vladimir; Sultansoy, Saleh; Sumida, Toshi; Sun, Xiaohu; Sundermann, Jan Erik; Suruliz, Kerim; Susinno, Giancarlo; Sutton, Mark; Suzuki, Yu; Svatos, Michal; Swedish, Stephen; Swiatlowski, Maximilian; Sykora, Ivan; Sykora, Tomas; Ta, Duc; Taccini, Cecilia; Tackmann, Kerstin; Taenzer, Joe; Taffard, Anyes; Tafirout, Reda; Taiblum, Nimrod; Takahashi, Yuta; Takai, Helio; Takashima, Ryuichi; Takeda, Hiroshi; Takeshita, Tohru; Takubo, Yosuke; Talby, Mossadek; Talyshev, Alexey; Tam, Jason; Tan, Kong Guan; Tanaka, Junichi; Tanaka, Reisaburo; Tanaka, Satoshi; Tanaka, Shuji; Tanasijczuk, Andres Jorge; Tannenwald, Benjamin Bordy; Tannoury, Nancy; Tapprogge, Stefan; Tarem, Shlomit; Tarrade, Fabien; Tartarelli, Giuseppe Francesco; Tas, Petr; Tasevsky, Marek; Tashiro, Takuya; Tassi, Enrico; Tavares Delgado, Ademar; Tayalati, Yahya; Taylor, Frank; Taylor, Geoffrey; Taylor, Wendy; Teischinger, Florian Alfred; Teixeira Dias Castanheira, Matilde; Teixeira-Dias, Pedro; Temming, Kim Katrin; Ten Kate, Herman; Teng, Ping-Kun; Teoh, Jia Jian; Terada, Susumu; Terashi, Koji; Terron, Juan; Terzo, Stefano; Testa, Marianna; Teuscher, Richard; Therhaag, Jan; Theveneaux-Pelzer, Timothée; Thomas, Juergen; Thomas-Wilsker, Joshuha; Thompson, Emily; Thompson, Paul; Thompson, Peter; Thompson, Stan; Thomsen, Lotte Ansgaard; Thomson, Evelyn; Thomson, Mark; Thong, Wai Meng; Thun, Rudolf; Tian, Feng; Tibbetts, Mark James; Tikhomirov, Vladimir; Tikhonov, Yury; Timoshenko, Sergey; Tiouchichine, Elodie; Tipton, Paul; Tisserant, Sylvain; Todorov, Theodore; Todorova-Nova, Sharka; Toggerson, Brokk; Tojo, Junji; Tokár, Stanislav; Tokushuku, Katsuo; Tollefson, Kirsten; Tomlinson, Lee; Tomoto, Makoto; Tompkins, Lauren; Toms, Konstantin; Topilin, Nikolai; Torrence, Eric; Torres, Heberth; Torró Pastor, Emma; Toth, Jozsef; Touchard, Francois; Tovey, Daniel; Tran, Huong Lan; Trefzger, Thomas; Tremblet, Louis; Tricoli, Alessandro; Trigger, Isabel Marian; Trincaz-Duvoid, Sophie; Tripiana, Martin; Triplett, Nathan; Trischuk, William; Trocmé, Benjamin; Troncon, Clara; Trottier-McDonald, Michel; Trovatelli, Monica; True, Patrick; Trzebinski, Maciej; Trzupek, Adam; Tsarouchas, Charilaos; Tseng, Jeffrey; Tsiareshka, Pavel; Tsionou, Dimitra; Tsipolitis, Georgios; Tsirintanis, Nikolaos; Tsiskaridze, Shota; Tsiskaridze, Vakhtang; Tskhadadze, Edisher; Tsukerman, Ilya; Tsulaia, Vakhtang; Tsuno, Soshi; Tsybychev, Dmitri; Tudorache, Alexandra; Tudorache, Valentina; Tuna, Alexander Naip; Tupputi, Salvatore; Turchikhin, Semen; Turecek, Daniel; Turk Cakir, Ilkay; Turra, Ruggero; Tuts, Michael; Tykhonov, Andrii; Tylmad, Maja; Tyndel, Mike; Uchida, Kirika; Ueda, Ikuo; Ueno, Ryuichi; Ughetto, Michael; Ugland, Maren; Uhlenbrock, Mathias; Ukegawa, Fumihiko; Unal, Guillaume; Undrus, Alexander; Unel, Gokhan; Ungaro, Francesca; Unno, Yoshinobu; Urbaniec, Dustin; Urquijo, Phillip; Usai, Giulio; Usanova, Anna; Vacavant, Laurent; Vacek, Vaclav; Vachon, Brigitte; Valencic, Nika; Valentinetti, Sara; Valero, Alberto; Valery, Loic; Valkar, Stefan; Valladolid Gallego, Eva; Vallecorsa, Sofia; Valls Ferrer, Juan Antonio; Van Den Wollenberg, Wouter; Van Der Deijl, Pieter; van der Geer, Rogier; van der Graaf, Harry; Van Der Leeuw, Robin; van der Ster, Daniel; van Eldik, Niels; van Gemmeren, Peter; Van Nieuwkoop, Jacobus; van Vulpen, Ivo; van Woerden, Marius Cornelis; Vanadia, Marco; Vandelli, Wainer; Vanguri, Rami; Vaniachine, Alexandre; Vankov, Peter; Vannucci, Francois; Vardanyan, Gagik; Vari, Riccardo; Varnes, Erich; Varol, Tulin; Varouchas, Dimitris; Vartapetian, Armen; Varvell, Kevin; Vazeille, Francois; Vazquez Schroeder, Tamara; Veatch, Jason; Veloso, Filipe; Veneziano, Stefano; Ventura, Andrea; Ventura, Daniel; Venturi, Manuela; Venturi, Nicola; Venturini, Alessio; Vercesi, Valerio; Verducci, Monica; Verkerke, Wouter; Vermeulen, Jos; Vest, Anja; Vetterli, Michel; Viazlo, Oleksandr; Vichou, Irene; Vickey, Trevor; Vickey Boeriu, Oana Elena; Viehhauser, Georg; Viel, Simon; Vigne, Ralph; Villa, Mauro; Villaplana Perez, Miguel; Vilucchi, Elisabetta; Vincter, Manuella; Vinogradov, Vladimir; Virzi, Joseph; Vivarelli, Iacopo; Vives Vaque, Francesc; Vlachos, Sotirios; Vladoiu, Dan; Vlasak, Michal; Vogel, Adrian; Vogel, Marcelo; Vokac, Petr; Volpi, Guido; Volpi, Matteo; von der Schmitt, Hans; von Radziewski, Holger; von Toerne, Eckhard; Vorobel, Vit; Vorobev, Konstantin; Vos, Marcel; Voss, Rudiger; Vossebeld, Joost; Vranjes, Nenad; Vranjes Milosavljevic, Marija; Vrba, Vaclav; Vreeswijk, Marcel; Vu Anh, Tuan; Vuillermet, Raphael; Vukotic, Ilija; Vykydal, Zdenek; Wagner, Peter; Wagner, Wolfgang; Wahlberg, Hernan; Wahrmund, Sebastian; Wakabayashi, Jun; Walder, James; Walker, Rodney; Walkowiak, Wolfgang; Wall, Richard; Waller, Peter; Walsh, Brian; Wang, Chao; Wang, Chiho; Wang, Fuquan; Wang, Haichen; Wang, Hulin; Wang, Jike; Wang, Jin; Wang, Kuhan; Wang, Rui; Wang, Song-Ming; Wang, Tan; Wang, Xiaoxiao; Wanotayaroj, Chaowaroj; Warburton, Andreas; Ward, Patricia; Wardrope, David Robert; Warsinsky, Markus; Washbrook, Andrew; Wasicki, Christoph; Watkins, Peter; Watson, Alan; Watson, Ian; Watson, Miriam; Watts, Gordon; Watts, Stephen; Waugh, Ben; Webb, Samuel; Weber, Michele; Weber, Stefan Wolf; Webster, Jordan S; Weidberg, Anthony; Weigell, Philipp; Weinert, Benjamin; Weingarten, Jens; Weiser, Christian; Weits, Hartger; Wells, Phillippa; Wenaus, Torre; Wendland, Dennis; Weng, Zhili; Wengler, Thorsten; Wenig, Siegfried; Wermes, Norbert; Werner, Matthias; Werner, Per; Wessels, Martin; Wetter, Jeffrey; Whalen, Kathleen; White, Andrew; White, Martin; White, Ryan; White, Sebastian; Whiteson, Daniel; Wicke, Daniel; Wickens, Fred; Wiedenmann, Werner; Wielers, Monika; Wienemann, Peter; Wiglesworth, Craig; Wiik-Fuchs, Liv Antje Mari; Wijeratne, Peter Alexander; Wildauer, Andreas; Wildt, Martin Andre; Wilkens, Henric George; Will, Jonas Zacharias; Williams, Hugh; Williams, Sarah; Willis, Christopher; Willocq, Stephane; Wilson, Alan; Wilson, John; Wingerter-Seez, Isabelle; Winklmeier, Frank; Winter, Benedict Tobias; Wittgen, Matthias; Wittig, Tobias; Wittkowski, Josephine; Wollstadt, Simon Jakob; Wolter, Marcin Wladyslaw; Wolters, Helmut; Wosiek, Barbara; Wotschack, Jorg; Woudstra, Martin; Wozniak, Krzysztof; Wright, Michael; Wu, Mengqing; Wu, Sau Lan; Wu, Xin; Wu, Yusheng; Wulf, Evan; Wyatt, Terry Richard; Wynne, Benjamin; Xella, Stefania; Xiao, Meng; Xu, Da; Xu, Lailin; Yabsley, Bruce; Yacoob, Sahal; Yamada, Miho; Yamaguchi, Hiroshi; Yamaguchi, Yohei; Yamamoto, Akira; Yamamoto, Kyoko; Yamamoto, Shimpei; Yamamura, Taiki; Yamanaka, Takashi; Yamauchi, Katsuya; Yamazaki, Yuji; Yan, Zhen; Yang, Haijun; Yang, Hongtao; Yang, Un-Ki; Yang, Yi; Yanush, Serguei; Yao, Liwen; Yao, Weiming; Yasu, Yoshiji; Yatsenko, Elena; Yau Wong, Kaven Henry; Ye, Jingbo; Ye, Shuwei; Yen, Andy L; Yildirim, Eda; Yilmaz, Metin; Yoosoofmiya, Reza; Yorita, Kohei; Yoshida, Rikutaro; Yoshihara, Keisuke; Young, Charles; Young, Christopher John; Youssef, Saul; Yu, David Ren-Hwa; Yu, Jaehoon; Yu, Jiaming; Yu, Jie; Yuan, Li; Yurkewicz, Adam; Yusuff, Imran; Zabinski, Bartlomiej; Zaidan, Remi; Zaitsev, Alexander; Zaman, Aungshuman; Zambito, Stefano; Zanello, Lucia; Zanzi, Daniele; Zeitnitz, Christian; Zeman, Martin; Zemla, Andrzej; Zengel, Keith; Zenin, Oleg; Ženiš, Tibor; Zerwas, Dirk; Zevi della Porta, Giovanni; Zhang, Dongliang; Zhang, Fangzhou; Zhang, Huaqiao; Zhang, Jinlong; Zhang, Lei; Zhang, Xueyao; Zhang, Zhiqing; Zhao, Zhengguo; Zhemchugov, Alexey; Zhong, Jiahang; Zhou, Bing; Zhou, Lei; Zhou, Ning; Zhu, Cheng Guang; Zhu, Hongbo; Zhu, Junjie; Zhu, Yingchun; Zhuang, Xuai; Zhukov, Konstantin; Zibell, Andre; Zieminska, Daria; Zimine, Nikolai; Zimmermann, Christoph; Zimmermann, Robert; Zimmermann, Simone; Zimmermann, Stephanie; Zinonos, Zinonas; Ziolkowski, Michael; Zobernig, Georg; Zoccoli, Antonio; zur Nedden, Martin; Zurzolo, Giovanni; Zutshi, Vishnu; Zwalinski, Lukasz

    2014-09-15

    A novel technique to identify and split clusters created by multiple charged particles in the ATLAS pixel detector using a set of artificial neural networks is presented. Such merged clusters are a common feature of tracks originating from highly energetic objects, such as jets. Neural networks are trained using Monte Carlo samples produced with a detailed detector simulation. This technique replaces the former clustering approach based on a connected component analysis and charge interpolation. The performance of the neural network splitting technique is quantified using data from proton-proton collisions at the LHC collected by the ATLAS detector in 2011 and from Monte Carlo simulations. This technique reduces the number of clusters shared between tracks in highly energetic jets by up to a factor of three. It also provides more precise position and error estimates of the clusters in both the transverse and longitudinal impact parameter resolution.

  11. A Neural-Network Clusterisation Algorithm for the ATLAS Silicon Pixel Detector

    CERN Document Server

    Leney, KJC; The ATLAS collaboration

    2014-01-01

    A novel technique using a set of artificial neural networks to identify and split merged measurements created by multiple charged particles in the ATLAS pixel detector is presented. Such merged measurements are a common feature of boosted physics objects such as tau leptons or strongly energetic jets where particles are highly collimated. The neural networks are trained using Monte Carlo samples produced with a detailed detector simulation. The performance of the splitting technique is quantified using LHC data collected by the ATLAS detector and Monte Carlo simulation. The number of shared hits per track is significantly reduced, particularly in boosted systems, which increases the reconstruction efficiency and quality. The improved position and error estimates of the measurements lead to a sizable improvement of the track and vertex resolution.

  12. A Neural-Network Clusterisation Algorithm for the ATLAS Silicon Pixel Detector

    CERN Document Server

    Leney, KJC; The ATLAS collaboration

    2013-01-01

    We present a novel technique using a set of artificial neural networks to identify and split merged measurements created by multiple charged particles in the ATLAS pixel detector. Such merged measurements are a common feature of boosted physics objects such as tau leptons or strongly energetic jets where particles get highly collimated. The neural networks are trained using Monte Carlo samples produced with a detailed detector simulation. The performance of the splitting technique is quantified using LHC data collected by the ATLAS detector in 2011 and Monte Carlo simulation. The number of shared hits per track is significantly reduced, particularly in boosted systems, which increases the reconstruction efficiency and quality. The improved position and error estimates of the measurements lead to a sizable improvement of the track and vertex resolution.

  13. Performance of Irradiated Thin Edgeless N-on-P Planar Pixel Sensors for ATLAS Upgrades

    CERN Document Server

    AUTHOR|(CDS)2081098; Boscardin, M; Bosisio, L; Calderini, G; Chauveau, J; Giacomini, G; La Rosa, A; Marchori, G; Zorzi, N

    2013-01-01

    In view of the LHC upgrade phases towards the High Luminosity LHC (HL-LHC), the ATLAS experiment plans to upgrade the Inner Detector with an all-silicon system. Because of its radiation hardness and cost effectiveness, the n-on-p silicon technology is a promising candidate for a large area pixel detector. The paper reports on the joint development, by LPNHE and FBK of novel n-on-p edgeless planar pixel sensors, making use of the active trench concept for the reduction of the dead area at the periphery of the device. After discussing the sensor technology, a complete overview of the electrical characterization of several irradiated samples will be discussed. Some comments about detector modules being assembled will be made and eventually some plans will be outlined.

  14. Electrical Characterization of a Thin Edgeless N-on-p Planar Pixel Sensors For ATLAS Upgrades

    CERN Document Server

    Bomben, M; Boscardin, M; Bosisio, L; Calderini, G; Chauveau, J; Giacomini, G; La Rosa, A; Marchori, G; Zorzi, N

    2013-01-01

    In view of the LHC upgrade phases towards the High Luminosity LHC (HL-LHC), the ATLAS experiment plans to upgrade the Inner Detector with an all-silicon system. Because of its radiation hardness and cost effectiveness, the n-on-p silicon technology is a promising candidate for a large area pixel detector. The paper reports on the joint development, by LPNHE and FBK of novel n-on-p edgeless planar pixel sensors, making use of the active trench concept for the reduction of the dead area at the periphery of the device. After discussing the sensor technology, and presenting some sensors' simulation results, a complete overview of the electrical characterization of the produced devices will be given.

  15. Electrical characterization of thin edgeless N-on-p planar pixel sensors for ATLAS upgrades

    CERN Document Server

    Bomben, M

    2014-01-01

    In view of the LHC upgrade phases towards the High Luminosity LHC (HL-LHC), the ATLAS experiment plans to upgrade the Inner Detector with an all-silicon system. Because of its radiation hardness and cost effectiveness, the n-on-p silicon technology is a promising candidate for a large area pixel detector. The paper reports on the joint development, by LPNHE and FBK of novel n-on-p edgeless planar pixel sensors, making use of the active trench concept for the reduction of the dead area at the periphery of the device. After discussing the sensor technology, and presenting some sensors' simulation results, a complete overview of the electrical characterization of the produced devices will be given.

  16. Design, production, and reliability of the new ATLAS pixel opto-boards

    Science.gov (United States)

    Gan, K. K.; Buchholz, P.; Che, S.; Ishmukhametov, R.; Kagan, H. P.; Kass, R. D.; Looper, K.; Moore, J. R.; Moss, J.; Smith, D. S.; Yang, Y.; Ziolkowski, M.

    2015-02-01

    New fiber optical transceivers, opto-boards, were designed and produced to replace the first generation opto-boards installed in the ATLAS pixel detector and for the new pixel layer, the insertable barrel layer (IBL). Each opto-board contains one 12-channel PIN array and two 12-channel VCSEL arrays along with associated receiver and driver ASICs. The new opto-board design benefits from the production and operational experience of the first generation opto-boards and contains several improvements. The new opto-boards have been successfully installed. Additionally, a set of the new opto-boards have been subjected to an accelerated lifetime experiment at 85 C and 85% relative humidity for over 1,000 hours. No failures were observed. We are cautiously optimistic that the new opto-boards will survive until the shutdown for the detector upgrade for the high-luminosity Large Hadron Collider (HL-LHC).

  17. The phase-II ATLAS pixel tracker upgrade: layout and mechanics.

    CERN Document Server

    Sharma, Abhishek; The ATLAS collaboration

    2016-01-01

    The ATLAS experiment will upgrade its tracking detector during the Phase-II LHC shutdown, to better take advantage of the increased luminosity of the HL-LHC. The upgraded tracker will consist of silicon-strip modules surrounding a pixel detector, and will likely cover an extended eta range, perhaps as far as |eta|<4.0. A number of layout and supporting-structure options are being considered for the pixel detector, with the final choice expected to be made in early 2017. The proposed supporting structures are based on lightweight, highly-thermally-conductive carbon-based materials and are cooled by evaporative carbon dioxide. The various layouts will be described and a description of the supporting structures will be presented, along with results from testing of prototypes.

  18. Analog front-end cell designed in a commercial 025 mu m process for the ATLAS pixel detector at LHC

    CERN Document Server

    Blanquart, L; Comes, G; Denes, P; Einsweiler, Kevin F; Fischer, P; Mandelli, E; Meddeler, G; Peric, I; Richardson, J

    2002-01-01

    A new analog pixel front-end cell has been developed for the ATLAS detector at the future Large Hadron Collider (LHC) at the European Laboratory for Particle Physics (CERN). This analog cell has been submitted in two commercial 0.25 mu m CMOS processes (in an analog test chip format), using special layout techniques for radiation hardness purposes. It is composed of two cascaded amplifiers followed by a fast discriminator featuring a detection threshold within the range of 1000 to 10000 electrons. The first preamplifier has the principal role of providing a large bandwidth, low input impedance, and fast rise time in order to enhance the time-walk and crosstalk performance, whereas the second fully differential amplifier is aimed at delivering a sufficiently high-voltage gain for optimum comparison. A new do feedback concept renders the cell tolerant of sensor leakage current up to 300 nA and provides monitoring of this current. Two 5-bit digital-to-analog converters tolerant to single- event upset have been i...

  19. Investigation of thin n-in-p planar pixel modules for the ATLAS upgrade

    CERN Document Server

    Savic, Natascha

    2016-01-01

    In view of the High Luminosity upgrade of the Large Hadron Collider (HL-LHC), planned to start around 2023-2025, the ATLAS experiment will undergo a replacement of the Inner Detector. A higher luminosity will imply higher irradiation levels and hence will demand more ra- diation hardness especially in the inner layers of the pixel system. The n-in-p silicon technology is a promising candidate to instrument this region, also thanks to its cost-effectiveness because it only requires a single sided processing in contrast to the n-in-n pixel technology presently employed in the LHC experiments. In addition, thin sensors were found to ensure radiation hardness at high fluences. An overview is given of recent results obtained with not irradiated and irradiated n-in-p planar pixel modules. The focus will be on n-in-p planar pixel sensors with an active thickness of 100 and 150 {\\mu}m recently produced at ADVACAM. To maximize the active area of the sensors, slim and active edges are implemented. The performance of th...

  20. Design and Realisation of Integrated Circuits for the Readout of Pixel Sensors in High Energy Physics and Biomedical Imaging

    CERN Document Server

    Peric, Ivan

    2004-01-01

    Several application specific microchips (ASICs) for the readout of pixel detectors have been designed, tested and described in this thesis. The first chapter gives the detailed description of the pixel-readout chip for the ATLAS pixel detector (FEI). The chip is now in operation as the innermost electronic component of the ATLAS detector. The chip for steering of DEPFET matrix (SWITCHER) is described in the second chapter. The chip is implemented in a high-voltage CMOS technology, it generates fast high voltage signals. Finally, a novel pixel readout chip for a hybrid x-ray pixel detector based on direct conversion is introduced. The chip (CIX) has joint photon counting and integrating capability.

  1. Results of FE65-P2 Pixel Readout Test Chip for High Luminosity LHC Upgrades

    CERN Document Server

    AUTHOR|(SzGeCERN)394193

    2016-01-01

    A pixel readout test chip called FE65-P2 has been fabricated on 65 nm CMOS technology. FE65-P2 contains a matrix of 64 x 64 pixels on 50 micron by 50 micron pitch, designed to read out a bump bonded sensor. The goals of FE65-P2 are to demonstrate excellent analog performance isolated from digital activity well enough to achieve 500 electron stable threshold, be radiation hard to at least 500 Mrad, and prove the novel concept of isolated analog front ends embedded in a flat digital design, dubbed “analog islands in a digital sea”. Experience from FE65-P2 and hybrid assemblies will be applied to the design for a large format readout chip, called RD53A, to be produced in a wafer run in early 2017 by the RD53 collaboration. We review the case for 65 nm technology and report on threshold stability test results for the FE65-P2.

  2. The RD53 Collaboration's SystemVerilog-UVM Simulation Framework and its General Applicability to Design of Advanced Pixel Readout Chips

    CERN Document Server

    Marconi, S.; Placidi, P.; Christiansen, J.; Hemperek, T.

    2014-01-01

    The foreseen Phase 2 pixel upgrades at the LHC have very challenging requirements for the design of hybrid pixel readout chips. A versatile pixel simulation platform is as an essential development tool for the design, verification and optimization of both the system architecture and the pixel chip building blocks (Intellectual Properties, IPs). This work is focused on the implemented simulation and verification environment named VEPIX53, built using the SystemVerilog language and the Universal Verification Methodology (UVM) class library in the framework of the RD53 Collaboration. The environment supports pixel chips at different levels of description: its reusable components feature the generation of different classes of parameterized input hits to the pixel matrix, monitoring of pixel chip inputs and outputs, conformity checks between predicted and actual outputs and collection of statistics on system performance. The environment has been tested performing a study of shared architectures of the trigger late...

  3. The off-detector opto-electronics for the optical links of the ATLAS Semiconductor Tracker and Pixel detector

    CERN Document Server

    Chu, M L; Su, D S; Teng, P K; Goodrick, M; Kundu, N; Weidberg, T; French, M; MacWaters, C P; Matheson, J

    2004-01-01

    The off-detector part of the optical links for the ATLAS SCT and Pixel detectors is described. The VCSELs and p-i-n diodes used and the associated ASICs are described. A novel array packaging technique is explained and an analysis of the performance of the arrays and the overall system performance is given. The proposed procedure for the set-up of the optical links in ATLAS is described.

  4. Index of /data/chip-atlas [Life Science Database Archive metadata

    Lifescience Database Archive (English)

    Full Text Available Index of /data/chip-atlas Name Last modified Size Description Parent Directory - 20...6 14:34 - 20170307/ 07-Mar-2017 17:51 - 20170419/ 19-Apr-2017 18:52 - LATEST/ 19-Apr-2017 18:52 - data/ 01-Aug-2016 14:28 - Index of /data/chip-atlas ...

  5. System test and noise performance studies at the ATLAS pixel detector

    Energy Technology Data Exchange (ETDEWEB)

    Weingarten, J.

    2007-09-15

    The central component of the ATLAS Inner Tracker is the pixel detector. It consists of three barrel layers and three disk-layers in the end-caps in both forward directions. The innermost barrel layer is mounted at a distance of about 5 cm from the interaction region. With its very high granularity, truly two-dimensional hit information, and fast readout it is well suited to cope with the high densities of charged tracks, expected this close to the interaction region. The huge number of readout channels necessitates a very complex services infrastructure for powering, readout and safety. After a description of the pixel detector and its services infrastructure, key results from the system test at CERN are presented. Furthermore the noise performance of the pixel detector, crucial for high tracking and vertexing efficiencies, is studied. Measurements of the single-channel random noise are presented together with studies of common mode noise and measurements of the noise occupancy using a random trigger generator. (orig.)

  6. Silvaco ATLAS model of ESA's Gaia satellite e2v CCD91-72 pixels

    Science.gov (United States)

    Seabroke, George; Holland, Andrew; Burt, David; Robbins, Mark

    2010-07-01

    The Gaia satellite is a high-precision astrometry, photometry and spectroscopic ESA cornerstone mission, currently scheduled for launch in 2012. Its primary science drivers are the composition, formation and evolution of the Galaxy. Gaia will achieve its unprecedented accuracy requirements with detailed calibration and correction for CCD radiation damage and CCD geometric distortion. In this paper, the third of the series, we present our 3D Silvaco ATLAS model of the Gaia e2v CCD91-72 pixel. We publish e2v's design model predictions for the capacities of one of Gaia's pixel features, the supplementary buried channel (SBC), for the first time. Kohley et al. (2009) measured the SBC capacities of a Gaia CCD to be an order of magnitude smaller than e2v's design. We have found the SBC doping widths that yield these measured SBC capacities. The widths are systematically 2 μm offset to the nominal widths. These offsets appear to be uncalibrated systematic offsets in e2v photolithography, which could either be due to systematic stitch alignment offsets or lateral ABD shield doping diffusion. The range of SBC capacities were used to derive the worst-case random stitch error between two pixel features within a stitch block to be +/-0.25 μm, which cannot explain the systematic offsets. It is beyond the scope of our pixel model to provide the manufacturing reason for the range of SBC capacities, so it does not allow us to predict how representative the tested CCD is. This open question has implications for Gaia's radiation damage and geometric calibration models.

  7. Pixel readout chips in deep submicron CMOS for ALICE and LHCb tolerant to 10 mrad and beyond

    CERN Document Server

    Snoeys, W; Campbell, M; Cantatore, E; Cencelli, V; Dinapoli, R; Heijne, Erik H M; Jarron, Pierre; Lamanna, P; Minervini, D; Morel, M; O'Shea, V; Quiquempoix, V; San Segundo-Bello, D; Van Koningsveld, B; Wyllie, Ken H

    2001-01-01

    The ALICE1LHCB chip is a mixed-mode integrated circuit designed to read out silicon pixel detectors for two different applications: particle tracking in the ALICE Silicon Pixel Detector and particle identification in the LHCb Ring Imaging Cherenkov detector. To satisfy the different needs for these two experiments, the chip can be operated in two different modes. In tracking mode all the 50 mu m *425 mu m pixel cells in the 256*32 array are read out individually, whilst in particle identification mode they are combined in groups of 8 to form a 32*32 array of 300 mu m x 425 mu m cells. Radiation tolerance was enhanced through special circuit layout. Sensitivity to coupling of digital signals into the analog front end was minimized. System issues such as testability and uniformity further constrained the design. The circuit is currently being manufactured in a commercial 0.25 mu m CMOS technology. (28 refs).

  8. Pixelized M-pi-n CdTe detector coupled to Medipix2 readout chip

    CERN Document Server

    Kalliopuska, J; Penttila, R; Andersson, H; Nenonen, S; Gadda, A; Pohjonen, H; Vanttajac, I; Laaksoc, P; Likonen, J

    2011-01-01

    We have realized a simple method for patterning an M-pi-n CdTe diode with a deeply diffused pn-junction, such as indium anode on CdTe. The method relies on removing the semiconductor material on the anode-side of the diode until the physical junction has been reached. The pixelization of the p-type CdTe diode with an indium anode has been demonstrated by patterning perpendicular trenches with a high precision diamond blade and pulsed laser. Pixelization or microstrip pattering can be done on both sides of the diode, also on the cathode-side to realize double sided detector configuration. The article compares the patterning quality of the diamond blade process, pulsed pico-second and femto-second lasers processes. Leakage currents and inter-strip resistance have been measured and are used as the basis of the comparison. Secondary ion mass spectrometry (SIMS) characterization has been done for a diode to define the pn-junction depth and to see the effect of the thermal loads of the flip-chip bonding process. Th...

  9. Design and realisation of integrated circuits for the readout of pixel sensors in high-energy physics and biomedical imaging

    Energy Technology Data Exchange (ETDEWEB)

    Peric, I.

    2004-08-01

    Radiation tolerant pixel-readout chip for the ATLAS pixel detector has been designed, implemented in a deep-submicron CMOS technology and successfully tested. The chip contains readout-channels with complex analog and digital circuits. Chip for steering of the DEPFET active-pixel matrix has been implemented in a high-voltage CMOS technology. The chip contains channels which generate fast sequences of high-voltage signals. Detector containing this chip has been successfully tested. Pixel-readout test chip for an X-ray imaging pixel sensor has been designed, implemented in a CMOS technology and tested. Pixel-readout channels are able to simultaneously count the signals generated by passage of individual photons and to sum the total charge generated during exposure time. (orig.)

  10. Beam Test Studies of 3D Pixel Sensors Irradiated Non-Uniformly for the ATLAS Forward Physics Detector

    CERN Document Server

    Grinstein, S; Boscardin, M; Christophersen, M; Da Via, C; Betta, G -F Dalla; Darbo, G; Fadeyev, V; Fleta, C; Gemme, C; Grenier, P; Jimenez, A; Lopez, I; Micelli, A; Nelist, C; Parker, S; Pellegrini, G; Phlips, B; Pohl, D L; Sadrozinski, H F -W; Sicho, P; Tsiskaridze, S

    2013-01-01

    Pixel detectors with cylindrical electrodes that penetrate the silicon substrate (so called 3D detectors) offer advantages over standard planar sensors in terms of radiation hardness, since the electrode distance is decoupled from the bulk thickness. In recent years significant progress has been made in the development of 3D sensors, which culminated in the sensor production for the ATLAS Insertable B-Layer (IBL) upgrade carried out at CNM (Barcelona, Spain) and FBK (Trento, Italy). Based on this success, the ATLAS Forward Physics (AFP) experiment has selected the 3D pixel sensor technology for the tracking detector. The AFP project presents a new challenge due to the need for a reduced dead area with respect to IBL, and the in-homogeneous nature of the radiation dose distribution in the sensor. Electrical characterization of the first AFP prototypes and beam test studies of 3D pixel devices irradiated non-uniformly are presented in this paper.

  11. Full simulation of a testbeam experiment including modeling of the Bonn Atlas Telescope and Atlas 3D pixel silicon sensors

    CERN Document Server

    Sjøbæk, Kyrre Ness; Rohne, O M; Bolle, E

    2010-01-01

    3D silicon pixel sensors are a strong candidate for the sensor component of a new B-layer in the ATLAS detector, and for the ATLAS sLHC tracker, as these sensors can be highly radiation hard, fast, and sensitive to the edge. In order to characterize the sensors before large-scale application, samples are mounted in small fixed-target testbeam experiments. Here the samples are exposed to high-energy charged hadrons, and the response to this radiation is measured. The hit position in the sensor is estimated using a beam telescope, which measures the position of the particle while in flight up- and downstream of the sample. The hit position is then estimated by assuming that particle flies in a straight line between the telescope measurements and the sample. This thesis presents a full Geant4 simulation of the interaction between the beam particles and the material in the testbeam, including but not limited to sensors. The output from the simulation is then used for detailed modeling of the signal formation and ...

  12. Readout board upgrade for the Pixel Detectors: reasons, status and results in ATLAS

    CERN Document Server

    Giangiacomi, Nico; The ATLAS collaboration

    2017-01-01

    The increase of luminosity in the LHC accelerator at CERN constitutes a challenge for the data readout since the rate of data to be transmitted depends on both pileup and trigger frequency. In the ATLAS experiment, the effect of the increased luminosity is most evident in the Pixel Detector, which is the detector closest to the beam pipe. In order to face the difficult experimental challenges, the readout system was upgraded during the last few years. The main purpose of the upgrade was to provide a higher bandwidth by exploiting more recent technologies. The new readout system is composed by two paired electronic boards named Back Of Crate (BOC) and ReadOut Driver (ROD). In this work the main readout limitation related to increased luminosity will be discussed as well as the strategy and the technological solutions adopted in order to cope with the future operational challenges. In addition the general progresses and achievements will be presented.

  13. Alignment of the Pixel and SCT Modules for the 2004 ATLAS Combined Test Beam

    Energy Technology Data Exchange (ETDEWEB)

    ATLAS Collaboration; Ahmad, A.; Andreazza, A.; Atkinson, T.; Baines, J.; Barr, A.J.; Beccherle, R.; Bell, P.J.; Bernabeu, J.; Broklova, Z.; Bruckman de Renstrom, P.A.; Cauz, D.; Chevalier, L.; Chouridou, S.; Citterio, M.; Clark, A.; Cobal, M.; Cornelissen, T.; Correard, S.; Costa, M.J.; Costanzo, D.; Cuneo, S.; Dameri, M.; Darbo, G.; de Vivie, J.B.; Di Girolamo, B.; Dobos, D.; Drasal, Z.; Drohan, J.; Einsweiler, K.; Elsing, M.; Emelyanov, D.; Escobar, C.; Facius, K.; Ferrari, P.; Fergusson, D.; Ferrere, D.; Flick,, T.; Froidevaux, D.; Gagliardi, G.; Gallas, M.; Gallop, B.J.; Gan, K.K.; Garcia, C.; Gavrilenko, I.L.; Gemme, C.; Gerlach, P.; Golling, T.; Gonzalez-Sevilla, S.; Goodrick, M.J.; Gorfine, G.; Gottfert, T.; Grosse-Knetter, J.; Hansen, P.H.; Hara, K.; Hartel, R.; Harvey, A.; Hawkings, R.J.; Heinemann, F.E.W.; Henss, T.; Hill, J.C.; Huegging, F.; Jansen, E.; Joseph, J.; Unel, M. Karagoz; Kataoka, M.; Kersten, S.; Khomich, A.; Klingenberg, R.; Kodys, P.; Koffas, T.; Konstantinidis, N.; Kostyukhin, V.; Lacasta, C.; Lari, T.; Latorre, S.; Lester, C.G.; Liebig, W.; Lipniacka, A.; Lourerio, K.F.; Mangin-Brinet, M.; Marti i Garcia, S.; Mathes, M.; Meroni, C.; Mikulec, B.; Mindur, B.; Moed, S.; Moorhead, G.; Morettini, P.; Moyse, E.W.J.; Nakamura, K.; Nechaeva, P.; Nikolaev, K.; Parodi, F.; Parzhitskiy, S.; Pater, J.; Petti, R.; Phillips, P.W.; Pinto, B.; Poppleton, A.; Reeves, K.; Reisinger, I.; Reznicek, P.; Risso, P.; Robinson, D.; Roe, S.; Rozanov, A.; Salzburger, A.; Sandaker, H.; Santi, L.; Schiavi, C.; Schieck, J.; Schultes, J.; Sfyrla, A.; Shaw, C.; Tegenfeldt, F.; Timmermans, C.J.W.P.; Toczek, B.; Troncon, C.; Tyndel, M.; Vernocchi, F.; Virzi, J.; Anh, T. Vu; Warren, M.; Weber, J.; Weber, M.; Weidberg, A.R.; Weingarten, J.; Wellsf, P.S.; Zhelezkow, A.

    2008-06-02

    A small set of final prototypes of the ATLAS Inner Detector silicon tracking system(Pixel Detector and SemiConductor Tracker), were used to take data during the 2004 Combined Test Beam. Data were collected from runs with beams of different flavour (electrons, pions, muons and photons) with a momentum range of 2 to 180 GeV/c. Four independent methods were used to align the silicon modules. The corrections obtained were validated using the known momenta of the beam particles and were shown to yield consistent results among the different alignment approaches. From the residual distributions, it is concluded that the precision attained in the alignmentof the silicon modules is of the order of 5 mm in their most precise coordinate.

  14. Alignment of the Pixel and SCT Modules for the 2004 ATLAS Combined Test Beam

    Science.gov (United States)

    Ahmad, A.; Andreazza, A.; Atkinson, T.; Baines, J.; Barr, A. J.; Beccherle, R.; Bell, P. J.; Bernabeu, J.; Broklova, Z.; Bruckman de Renstrom, P. A.; Cauz, D.; Chevalier, L.; Chouridou, S.; Citterio, M.; Clark, A.; Cobal, M.; Cornelissen, T.; Correard, S.; Costa, M. J.; Costanzo, D.; Cuneo, S.; Dameri, M.; Darbo, G.; de Vivie, J. B.; Di Girolamo, B.; Dobos, D.; Drasal, Z.; Drohan, J.; Einsweiler, K.; Elsing, M.; Emelyanov, D.; Escobar, C.; Facius, K.; Ferrari, P.; Fergusson, D.; Ferrere, D.; Flick, T.; Froidevaux, D.; Gagliardi, G.; Gallas, M.; Gallop, B. J.; Gan, K. K.; Garcia, C.; Gavrilenko, I. L.; Gemme, C.; Gerlach, P.; Golling, T.; Gonzalez-Sevilla, S.; Goodrick, M. J.; Gorfine, G.; Göttfert, T.; Grosse-Knetter, J.; Hansen, P. H.; Hara, K.; Härtel, R.; Harvey, A.; Hawkings, R. J.; Heinemann, F. E. W.; Henss, T.; Hill, J. C.; Huegging, F.; Jansen, E.; Joseph, J.; Karagöz Ünel, M.; Kataoka, M.; Kersten, S.; Khomich, A.; Klingenberg, R.; Kodys, P.; Koffas, T.; Konstantinidis, N.; Kostyukhin, V.; Lacasta, C.; Lari, T.; Latorre, S.; Lester, C. G.; Liebig, W.; Lipniacka, A.; Lourerio, K. F.; Mangin-Brinet, M.; Garcia, S. Marti i.; Mathes, M.; Meroni, C.; Mikulec, B.; Mindur, B.; Moed, S.; Moorhead, G.; Morettini, P.; Moyse, E. W. J.; Nakamura, K.; Nechaeva, P.; Nikolaev, K.; Parodi, F.; Parzhitskiy, S.; Pater, J.; Petti, R.; Phillips, P. W.; Pinto, B.; Poppleton, A.; Reeves, K.; Reisinger, I.; Reznicek, P.; Risso, P.; Robinson, D.; Roe, S.; Rozanov, A.; Salzburger, A.; Sandaker, H.; Santi, L.; Schiavi, C.; Schieck, J.; Schultes, J.; Sfyrla, A.; Shaw, C.; Tegenfeldt, F.; Timmermans, C. J. W. P.; Toczek, B.; Troncon, C.; Tyndel, M.; Vernocchi, F.; Virzi, J.; Anh, T. Vu; Warren, M.; Weber, J.; Weber, M.; Weidberg, A. R.; Weingarten, J.; Wells, P. S.; Zhelezko, A.

    2008-09-01

    A small set of final prototypes of the ATLAS Inner Detector silicon tracking system (Pixel Detector and SemiConductor Tracker), were used to take data during the 2004 Combined Test Beam. Data were collected from runs with beams of different flavour (electrons, pions, muons and photons) with a momentum range of 2 to 180 GeV/c. Four independent methods were used to align the silicon modules. The corrections obtained were validated using the known momenta of the beam particles and were shown to yield consistent results among the different alignment approaches. From the residual distributions, it is concluded that the precision attained in the alignment of the silicon modules is of the order of 5 μm in their most precise coordinate.

  15. Development of edgeless n-on-p planar pixel sensors for future ATLAS upgrades

    Energy Technology Data Exchange (ETDEWEB)

    Bomben, Marco, E-mail: marco.bomben@cern.ch [Laboratoire de Physique Nucleaire et de Hautes Énergies (LPNHE) Paris (France); Bagolini, Alvise; Boscardin, Maurizio [Fondazione Bruno Kessler, Centro per i Materiali e i Microsistemi (FBK-CMM) Povo di Trento (Italy); Bosisio, Luciano [Università di Trieste, Dipartimento di Fisica and INFN, Trieste (Italy); Calderini, Giovanni [Laboratoire de Physique Nucleaire et de Hautes Énergies (LPNHE) Paris (France); Dipartimento di Fisica E. Fermi, Università di Pisa, and INFN Sez. di Pisa, Pisa (Italy); Chauveau, Jacques [Laboratoire de Physique Nucleaire et de Hautes Énergies (LPNHE) Paris (France); Giacomini, Gabriele [Fondazione Bruno Kessler, Centro per i Materiali e i Microsistemi (FBK-CMM) Povo di Trento (Italy); La Rosa, Alessandro [Section de Physique (DPNC), Université de Genève, Genève (Switzerland); Marchiori, Giovanni [Laboratoire de Physique Nucleaire et de Hautes Énergies (LPNHE) Paris (France); Zorzi, Nicola [Fondazione Bruno Kessler, Centro per i Materiali e i Microsistemi (FBK-CMM) Povo di Trento (Italy)

    2013-06-01

    The development of n-on-p “edgeless” planar pixel sensors being fabricated at FBK (Trento, Italy), aimed at the upgrade of the ATLAS Inner Detector for the High Luminosity phase of the Large Hadron Collider (HL-LHC), is reported. A characterizing feature of the devices is the reduced dead area at the edge, achieved by adopting the “active edge” technology, based on a deep etched trench, suitably doped to make an ohmic contact to the substrate. The project is presented, along with the active edge process, the sensor design for this first n-on-p production and a selection of simulation results, including the expected charge collection efficiency after radiation fluence of 1×10{sup 15}n{sub eq}/cm{sup 2} comparable to those expected at HL-LHC (about ten years of running, with an integrated luminosity of 3000 fb{sup −1}) for the outer pixel layers. We show that, after irradiation and at a bias voltage of 500 V, more than 50% of the signal should be collected in the edge region; this confirms the validity of the active edge approach. -- Highlights: ► We conceive n-on-p edgeless planar silicon sensors. ► These sensors are aimed at the Phase-II of the ATLAS experiment. ► Simulations show sensors can be operated well in overdepletion. ► Simulations show the sensor capability to collect charge at the periphery. ► Simulations prove the above statements to be true even after irradiation.

  16. Characterization of silicon 3D pixel detectors for the ATLAS Forward Physics experiment

    Energy Technology Data Exchange (ETDEWEB)

    Lopez Paz, I.; Cavallaro, E.; Lange, J. [Institut de Fisica d' Altes Energies - IFAE, 08193 Bellaterra, Barcelona (Spain); Grinstein, S. [Institut de Fisica d' Altes Energies - IFAE, 08193 Bellaterra, Barcelona (Spain); Catalan Institution for Research and Advanced Studies - ICREA, Barcelona (Spain)

    2015-07-01

    The ATLAS Forward Physics (AFP) project aims to measure protons scattered under a small angle from the pp collisions in ATLAS. In order to perform such measurements, a new silicon tracker, together with a time-of-flight detector for pile-up removal, are planned to be installed at ∼210 m from the interaction point and at 2-3 mm from the LHC proton beam. To cope with such configuration and maximize the physics outcome, the tracker has to fulfil three main requirements: endure highly non-uniform radiation doses, due to the very inhomogeneous beam profile, have slim and efficient edges to improve the acceptance of the tracker, and provide good position resolution. Recent laboratory and beam test characterization results of AFP prototypes will be presented. Slim-edged 3D pixel detectors down to 100-200 μm were studied and later non-uniformly irradiated (with a peak fluence of several 10{sup 15} n{sub eq}/cm{sup 2}) to determine the fulfilment of the AFP requirements. (authors)

  17. Simulation of the depletion voltage evolution of the ATLAS Pixel Detector

    CERN Document Server

    Beyer, Julien-christopher; The ATLAS collaboration

    2017-01-01

    The ATLAS Pixel detector has been operating since 2010 and consists of hybrid pixel modules where the sensitive elements are planar n-in-n sensors. In order to investigate and predict the evolution of the depletion voltage and of the leakage current in the different layers, a fully analytical implementation of the Hamburg model was derived. The parameters of the model, describing the dependence of the depletion voltage (U_depl) on fluence, temperature and time were tuned with a fit to the available measurements of Udepl in the last years of operation. A particular emphasis is put on the B-Layer, where the highest fluence has been accumulated up to now. A precise input of temperature and radiation dose is generated from the on-module temperature monitoring and the luminosity data. The analysis is then also extended to the Insertable B-Layer (IBL), installed at the end of Run-1, where we expect the fastest evolution of the radiation damage with luminosity, due to its closer position to the interaction point. Di...

  18. Three Generations of FPGA DAQ Development for the ATLAS Pixel Detector

    CERN Document Server

    AUTHOR|(CDS)2091916; Hsu, Shih-Chieh; Hauck, Scott Alan

    The Large Hadron Collider (LHC) at the European Center for Nuclear Research (CERN) tracks a schedule of long physics runs, followed by periods of inactivity known as Long Shutdowns (LS). During these LS phases both the LHC, and the experiments around its ring, undergo maintenance and upgrades. For the LHC these upgrades improve their ability to create data for physicists; the more data the LHC can create the more opportunities there are for rare events to appear that physicists will be interested in. The experiments upgrade so they can record the data and ensure the event won’t be missed. Currently the LHC is in Run 2 having completed the first LS of three. This thesis focuses on the development of Field-Programmable Gate Array (FPGA)-based readout systems that span across three major tasks of the ATLAS Pixel data acquisition (DAQ) system. The evolution of Pixel DAQ’s Readout Driver (ROD) card is presented. Starting from improvements made to the new Insertable B-Layer (IBL) ROD design, which was part of t...

  19. Development of Edgeless n-on-p Planar Pixel Sensors for future ATLAS Upgrades

    CERN Document Server

    Bomben, M

    2013-01-01

    The development of n-on-p “edgeless” planar pixel sensors being fabricated at FBK (Trento, Italy), aimed at the upgrade of the ATLAS Inner Detector for the High Luminosity phase of the Large Hadron Collider (HL-LHC), is reported. A characterizing feature of the devices is the reduced dead area at the edge, achieved by adopting the “active edge” technology, based on a deep etched trench, suitably doped to make an ohmic contact to the substrate. The project is presented, along with the active edge process, the sensor design for this first n-on-p production and a selection of simulation results, including the expected charge collection efficiency after radiation fluence of View the MathML source1×1015neq/cm2 comparable to those expected at HL-LHC (about ten years of running, with an integrated luminosity of 3000 fb−1) for the outer pixel layers. We show that, after irradiation and at a bias voltage of 500 V, more than 50% of the signal should be collected in the edge region; this confirms the validity...

  20. Development of Edgeless n-on-p Planar Pixel Sensors for future ATLAS Upgrades

    CERN Document Server

    INSPIRE-00052711; Boscardin, M.; Bosisio, L.; Calderini, G.; Chauveau, J.; Giacomini, G.; La Rosa, A.; Marchori, G.; Zorzi, N.

    2013-01-01

    The development of n-on-p "edgeless" planar pixel sensors being fabricated at FBK (Trento, Italy), aimed at the upgrade of the ATLAS Inner Detector for the High Luminosity phase of the Large Hadron Collider (HL-LHC), is reported. A characterizing feature of the devices is the reduced dead area at the edge, achieved by adopting the "active edge" technology, based on a deep etched trench, suitably doped to make an ohmic contact to the substrate. The project is presented, along with the active edge process, the sensor design for this first n-on-p production and a selection of simulation results, including the expected charge collection efficiency after radiation fluence of $1 \\times 10^{15} {\\rm n_{eq}}/{\\rm cm}^2$ comparable to those expected at HL-LHC (about ten years of running, with an integrated luminosity of 3000 fb$^{-1}$) for the outer pixel layers. We show that, after irradiation, more than 50% of the signal should be collected in the edge region; this confirms the validity of the active edge approach.

  1. Design of a current based readout chip and development of a DEPFET pixel prototype system for the ILC vertex detector

    Energy Technology Data Exchange (ETDEWEB)

    Trimpl, M.

    2005-12-15

    The future TeV-scale linear collider ILC (International Linear Collider) offers a large variety of precision measurements complementary to the discovery potential of the LHC (Large Hadron Collider). To fully exploit its physics potential, a vertex detector with unprecedented performance is needed. One proposed technology for the ILC vertex detector is the DEPFET active pixel sensor. The DEPFET sensor offers particle detection with in-pixel amplification by incorporating a field effect transistor into a fully depleted high-ohmic silicon substrate. The device provides an excellent signal-to-noise ratio and a good spatial resolution at the same time. To establish a very fast readout of a DEPFET pixel matrix with row rates of 20 MHz and more, the 128 channel CURO II ASIC has been designed and fabricated. The architecture of the chip is completely based on current mode techniques (SI) perfectly adapted to the current signal of the sensor. For the ILC vertex detector a prototype system with a 64 x 128 DEPFET pixel matrix read out by the CURO II chip has been developed. The design issues and the standalone performance of the readout chip as well as first results with the prototype system will be presented. (orig.)

  2. Timepix, a 65k programmable pixel readout chip for arrival time, energy and/or photon counting measurements

    CERN Document Server

    Llopart, X; Campbell, M; Tlustos, L; Wong, W

    2008-01-01

    A novel approach for the readout of a TPC at the future linear collider is to use a CMOS pixel detector combined with some kind of gas gain grid. A first test using the photon counting chip Medipix2 with GEM or Micromegas demonstrated the feasibility of such an approach. Although this experiment demonstrated that single primary electrons could be detected the chip did not provide information on the arrival time of the electron in the sensitive gas volume nor did it give any indication of the quantity of charge detected. The Timepix chip uses an external clock with a frequency of up to 100 MHz as a time reference. Each pixel contains a preamplifier, a discriminator with hysteresis and 4-bit DAC for threshold adjustment, synchronization logic and a 14-bit counter with overflow control. Moreover, each pixel can be independently configured in one of four different modes: masked mode: pixel is off, counting mode: 1-count for each signal over threshold, TOT mode: the counter is incremented continuously as long as t...

  3. ATLAS-TPX: a two-layer pixel detector setup for neutron detection and radiation field characterization

    Science.gov (United States)

    Bergmann, B.; Caicedo, I.; Leroy, C.; Pospisil, S.; Vykydal, Z.

    2016-10-01

    A two-layer pixel detector setup (ATLAS-TPX), designed for thermal and fast neutron detection and radiation field characterization is presented. It consists of two segmented silicon detectors (256 × 256 pixels, pixel pitch 55 μm, thicknesses 300 μm and 500 μm) facing each other. To enhance the neutron detection efficiency a set of converter layers is inserted in between these detectors. The pixelation and the two-layer design allow a discrimination of neutrons against γs by pattern recognition and against charged particles by using the coincidence and anticoincidence information. The neutron conversion and detection efficiencies are measured in a thermal neutron field and fast neutron fields with energies up to 600 MeV. A Geant4 simulation model is presented, which is validated against the measured detector responses. The reliability of the coincidence and anticoincidence technique is demonstrated and possible applications of the detector setup are briefly outlined.

  4. Digital pixel CMOS focal plane array with on-chip multiply accumulate units for low-latency image processing

    Science.gov (United States)

    Little, Jeffrey W.; Tyrrell, Brian M.; D'Onofrio, Richard; Berger, Paul J.; Fernandez-Cull, Christy

    2014-06-01

    A digital pixel CMOS focal plane array has been developed to enable low latency implementations of image processing systems such as centroid trackers, Shack-Hartman wavefront sensors, and Fitts correlation trackers through the use of in-pixel digital signal processing (DSP) and generic parallel pipelined multiply accumulate (MAC) units. Light intensity digitization occurs at the pixel level, enabling in-pixel DSP and noiseless data transfer from the pixel array to the peripheral processing units. The pipelined processing of row and column image data prior to off chip readout reduces the required output bandwidth of the image sensor, thus reducing the latency of computations necessary to implement various image processing systems. Data volume reductions of over 80% lead to sub 10μs latency for completing various tracking and sensor algorithms. This paper details the architecture of the pixel-processing imager (PPI) and presents some initial results from a prototype device fabricated in a standard 65nm CMOS process hybridized to a commercial off-the-shelf short-wave infrared (SWIR) detector array.

  5. Measurement of charm and beauty-production in deep inelastic scattering at HERA and test beam studies of ATLAS pixel sensors

    Energy Technology Data Exchange (ETDEWEB)

    Libov, Vladyslav

    2013-08-15

    measurements with the front end chip FE-I4. Planar and 3D ATLAS pixel sensors were studied at the first IBL test beam at the CERN SPS.

  6. Holographic pixel super-resolution in portable lensless on-chip microscopy using a fiber-optic array.

    Science.gov (United States)

    Bishara, Waheb; Sikora, Uzair; Mudanyali, Onur; Su, Ting-Wei; Yaglidere, Oguzhan; Luckhart, Shirley; Ozcan, Aydogan

    2011-04-07

    We report a portable lensless on-chip microscope that can achieve optic waveguides are butt-coupled to light emitting diodes, which are controlled by a low-cost micro-controller to sequentially illuminate the sample. The resulting lensfree holograms are then captured by a digital sensor-array and are rapidly processed using a pixel super-resolution algorithm to generate much higher resolution holographic images (both phase and amplitude) of the objects. This wide-field and high-resolution on-chip microscope, being compact and light-weight, would be important for global health problems such as diagnosis of infectious diseases in remote locations. Toward this end, we validate the performance of this field-portable microscope by imaging human malaria parasites (Plasmodium falciparum) in thin blood smears. Our results constitute the first-time that a lensfree on-chip microscope has successfully imaged malaria parasites.

  7. Depleted fully monolithic CMOS pixel detectors using acolumn based readout architecture for the ATLAS InnerTracker upgrade

    CERN Document Server

    Wang, Tianyang; Berdalovic, Ivan; Bespin, Christian; Bhat, Siddharth; Breugnon, Patrick; Caicedo, Ivan; Cardella, Roberto; Chen, Zongde; Degerli, Yavuz; Egidos, Nuria; Godiot, Stéphanie; Guilloux, Fabrice; Hemperek, Tomasz; Hirono, Toko; Krüger, Hans; Kugathasan, Thanushan; Hügging, Fabian; Marin Tobon, Cesar Augusto; Moustakas, Konstantinos; Pangaud, Patrick; Schwemling, Philippe; Pernegger, Heinz; Pohl, David-Leon; Rozanov, Alexandre; Rymaszewski, Piotr; Snoeys, Walter; Wermes, Norbert

    2017-01-01

    Depleted monolithic active pixel sensors (DMAPS), which exploit high voltage and/orhigh resistivity add-ons of modern CMOS technologies to achieve substantial depletion in the sens-ing volume, have proven to have high radiation tolerance towards the requirements of ATLAS inthe high-luminosity LHC era. Depleted fully monolithic CMOS pixels with fast readout architec-tures are currently being developed as promising candidates for the outer pixel layers of the futureATLAS Inner Tracker, which will be installed during the phase II upgrade of ATLAS around year2025. In this work, two DMAPS prototype designs, named LF-MonoPix and TJ-MonoPix, arepresented. LF-MonoPix was designed and fabricated in the LFoundry 150 nm CMOS technology,and TJ-MonoPix has been designed in the TowerJazz 180 nm CMOS technology. Both chipsemploy the same readout architecture, i.e. the column drain architecture, whereas different sensorimplementation concepts are pursued. The design of the two prototypes will be described. Firstmeasurement ...

  8. Readout board upgrade for the Pixel Detectors: reasons, status and results in ATLAS

    CERN Document Server

    Giangiacomi, Nico; The ATLAS collaboration

    2017-01-01

    At LHC the design luminosity, 1034 cm -2 s -1 , has already been reached during Summer 2016. LHC is planning, in the short term future, to further enhance the luminosity, resulting in a higher trigger frequency and an increased pileup. These factors constitute a challenge for the data readout since the rate of data to be transmitted depends on both pileup and trigger frequency. In the ATLAS experiment, the effect of the increased luminosity is most evident in the Pixel Detector, which is the detector closest to the beam pipe. In order to face the difficult experimental challenges, the readout system was upgraded during the last few years. The main purpose of the upgrade was to provide a higher bandwidth by exploiting recent technologies. The new readout system is composed by two paired electronic boards, Back Of Crate (BOC) and ReadOut Driver (ROD). In this presentation the main readout limitation related to increased luminosity will be discussed as well as the strategy and the technological solutions adopted...

  9. Experience with 3D integration technologies in the framework of the ATLAS pixel detector upgrade for the HL-LHC

    CERN Document Server

    Aruntinov, D; Gonella, L; Hemperek, T; Hügging, F; Krüger, H; Wermes, N; Breugnon, P; Chantepie, B; Clemens, J.C; Fei, R; Fougeron, D; Godiot, S; Pangaud, P; Rozanov, A; Garcia-Sciveres, M; Mekkaoui, A

    2013-01-01

    3D technologies are investigated for the upgrade of the ATLAS pixel detector at the HL-LHC. R&D focuses on both, IC design in 3D, as well as on post-processing 3D technologies such as Through Silicon Via (TSV). The first one uses a so-called via first technology, featuring the insertion of small aspect ratio TSV at the pixel level. As discussed in the paper, this technology can still present technical challenges for the industrial partners. The second one consists of etching the TSV via last. This technology is investigated to enable 4-side abuttable module concepts, using today's pixel detector technology. Both approaches are presented in this paper and results from first available prototypes are discussed.

  10. Measurements and TCAD simulation of novel ATLAS planar pixel detector structures for the HL-LHC upgrade

    CERN Document Server

    INSPIRE-00304438; Gkougkousis, E.; Lounis, A.

    2015-01-01

    The LHC accelerator complex will be upgraded between 2020-2022, to the High-Luminosity-LHC, to considerably increase statistics for the various physics analyses. To operate under these challenging new conditions, and maintain excellent performance in track reconstruction and vertex location, the ATLAS pixel detector must be substantially upgraded and a full replacement is expected. Processing techniques for novel pixel designs are optimised through characterisation of test structures in a clean room and also through simulations with Technology Computer Aided Design (TCAD). A method to study non-perpendicular tracks through a pixel device is discussed. Comparison of TCAD simulations with Secondary Ion Mass Spectrometry (SIMS) measurements to investigate the doping profile of structures and validate the simulation process is also presented.

  11. Experiment list: SRX122496 [Chip-atlas[Archive

    Lifescience Database Archive (English)

    Full Text Available || chip antibody=Rel || treatment=LPS || time=120 min || chip antibody manufacturer 1=Santa Cruz || chip ant...ibody catalog number 1=sc-71 || chip antibody manufacturer 2=Santa Cruz || chip antibody catalog number 2=sc

  12. The FE-I4 pixel readout system-on-chip resubmission for the insertable B-Layer project

    CERN Document Server

    Zivkovic, V; Garcia-Sciveres, M; Mekkaoui, A; Barbero, M; Darbo, G; Gnani, D; Hemperek, T; Menouni, M; Fougeron, D; Gensolen, F; Jensen, F; Caminada, L; Gromov, V; Kluit, R; Fleury, J; Krüger, H; Backhaus, M; Fang, X; Gonella, L; Rozanove, A; Arutinov, D

    2012-01-01

    The FE-I4 is a new pixel readout integrated circuit designed to meet the requirements of ATLAS experiment upgrades. The first samples of the FE-I4 engineering run (called FE-I4A) delivered promising results in terms of the requested performances. The FE-I4 team envisaged a number of modifications and fine-tuning before the actual exploitation, planned within the Insertable B-Layer (IBL) of ATLAS. As the IBL schedule was pushed significantly forward, a quick and efficient plan had to be devised for the FE-I4 redesign. This article will present the main objectives of the resubmission, together with the major changes that were a driving factor for this redesign. In addition, the top-level verification and test efforts of the FE-I4 will also be addressed.

  13. Performance and description of the upgraded readout with the new back-end electronics for the ATLAS Pixel detector

    CERN Document Server

    Yajima, Kazuki; The ATLAS collaboration

    2017-01-01

    LHC increased drastically its performance during the RUN2 data taking, starting from a peak instantaneous luminosity of up to $5\\times10^{33} \\mathrm{cm}^{-2} \\mathrm{s}^{-1}$ in 2015 to conclude with the record value of $1.4\\times10^{34} \\mathrm{cm}^{-2} \\mathrm{s}^{-1}$ in November 2016. The concurrent increase of the trigger rate and event size forced the ATLAS experiment to exploit its sub-detectors to the maximum, approaching and possibly overcoming the design parameters. The ATLAS Pixel data acquisition system was upgraded to avoid possible bandwidth limitations. Two upgrades of the read-out electronics have been done. The first one during 2015/16 YETS, when the outermost pixel layer (Layer-2) was upgraded and its bandwidth was doubled. This upgrade partly contributed to maintain the data taking efficiency of the Pixel detector at a relatively high level ($\\sim$99%) during the 2016 run. A similar upgrade of the read-out system for the middle layer (Layer-1) is ongoing during 2016/17 EYETS. The details o...

  14. Demosaiced pixel super-resolution in digital holography for multiplexed computational color imaging on-a-chip (Conference Presentation)

    Science.gov (United States)

    Wu, Yichen; Zhang, Yibo; Luo, Wei; Ozcan, Aydogan

    2017-03-01

    Digital holographic on-chip microscopy achieves large space-bandwidth-products (e.g., >1 billion) by making use of pixel super-resolution techniques. To synthesize a digital holographic color image, one can take three sets of holograms representing the red (R), green (G) and blue (B) parts of the spectrum and digitally combine them to synthesize a color image. The data acquisition efficiency of this sequential illumination process can be improved by 3-fold using wavelength-multiplexed R, G and B illumination that simultaneously illuminates the sample, and using a Bayer color image sensor with known or calibrated transmission spectra to digitally demultiplex these three wavelength channels. This demultiplexing step is conventionally used with interpolation-based Bayer demosaicing methods. However, because the pixels of different color channels on a Bayer image sensor chip are not at the same physical location, conventional interpolation-based demosaicing process generates strong color artifacts, especially at rapidly oscillating hologram fringes, which become even more pronounced through digital wave propagation and phase retrieval processes. Here, we demonstrate that by merging the pixel super-resolution framework into the demultiplexing process, such color artifacts can be greatly suppressed. This novel technique, termed demosaiced pixel super-resolution (D-PSR) for digital holographic imaging, achieves very similar color imaging performance compared to conventional sequential R,G,B illumination, with 3-fold improvement in image acquisition time and data-efficiency. We successfully demonstrated the color imaging performance of this approach by imaging stained Pap smears. The D-PSR technique is broadly applicable to high-throughput, high-resolution digital holographic color microscopy techniques that can be used in resource-limited-settings and point-of-care offices.

  15. Experiment list: SRX214086 [Chip-atlas[Archive

    Lifescience Database Archive (English)

    Full Text Available entiated || cell line=KH2 || chip antibody 1=none || chip antibody manufacturer 1=none || chip antibody 2=none || chip antibody manuf...acturer 2=none http://dbarchive.biosciencedbc.jp/kyushu-

  16. Experiment list: SRX122520 [Chip-atlas[Archive

    Lifescience Database Archive (English)

    Full Text Available ntibody=Irf2 || treatment=LPS || time=30 min || chip antibody manufacturer 1=Abcam || chip antibody catalog ...number 1=ab65048 || chip antibody manufacturer 2=Santa Cruz || chip antibody catalog number 2=sc-498 http://

  17. Experiment list: SRX122485 [Chip-atlas[Archive

    Lifescience Database Archive (English)

    Full Text Available antibody=Atf3 || treatment=LPS || time=120 min || chip antibody manufacturer 1=Santa Cruz || chip antibody ...catalog number 1=sc-188 || chip antibody manufacturer 2=Abcam || chip antibody catalog number 2=ab70005-100

  18. Experiment list: SRX122413 [Chip-atlas[Archive

    Lifescience Database Archive (English)

    Full Text Available antibody=Junb || treatment=LPS || time=120 min || chip antibody manufacturer 1=Abcam || chip antibody catalo...g number 1=ab28838 || chip antibody manufacturer 2=Santa Cruz || chip antibody catalog number 2=sc-46 http:/

  19. Experiment list: SRX122412 [Chip-atlas[Archive

    Lifescience Database Archive (English)

    Full Text Available antibody=Junb || treatment=LPS || time=120 min || chip antibody manufacturer 1=Abcam || chip antibody catalo...g number 1=ab28838 || chip antibody manufacturer 2=Santa Cruz || chip antibody catalog number 2=sc-46 http:/

  20. Experiment list: SRX214073 [Chip-atlas[Archive

    Lifescience Database Archive (English)

    Full Text Available ge=Undifferentiated || treatment=Overexpress Sox2KE-V5 tagged || cell line=KH2 || chip antibody 1=none || chip antibody manufacture...r 1=none || chip antibody 2=V5 || chip antibody manufacture

  1. Experiment list: SRX214067 [Chip-atlas[Archive

    Lifescience Database Archive (English)

    Full Text Available fferentiated || cell line=F9 || chip antibody 1=Pou5f1/Oct4 || chip antibody manufacture...r 1=Santa Cruz || chip antibody 2=none || chip antibody manufacturer 2=none http://dbarchive.bioscien

  2. Experiment list: SRX214075 [Chip-atlas[Archive

    Lifescience Database Archive (English)

    Full Text Available age=Undifferentiated || treatment=Overexpress Sox17EK-V5 tagged || cell line=KH2 || chip antibody 1=none || chip antibody manufacture...r 1=none || chip antibody 2=V5 || chip antibody manufacture

  3. Experiment list: SRX214071 [Chip-atlas[Archive

    Lifescience Database Archive (English)

    Full Text Available Undifferentiated || treatment=Overexpress Sox2-V5 tagged || cell line=KH2 || chip antibody 1=none || chip antibody manufacture...r 1=none || chip antibody 2=V5 || chip antibody manufacturer 2=

  4. Experiment list: SRX122523 [Chip-atlas[Archive

    Lifescience Database Archive (English)

    Full Text Available ntibody=Irf2 || treatment=LPS || time=60 min || chip antibody manufacturer 1=Abcam || chip antibody catalog ...number 1=ab65048 || chip antibody manufacturer 2=Santa Cruz || chip antibody catalog number 2=sc-498 http://

  5. Experiment list: SRX214085 [Chip-atlas[Archive

    Lifescience Database Archive (English)

    Full Text Available entiated || cell line=KH2 || chip antibody 1=none || chip antibody manufacturer 1=none || chip antibody 2=none || chip antibody manuf...acturer 2=none http://dbarchive.biosciencedbc.jp/kyushu-

  6. Experiment list: SRX122414 [Chip-atlas[Archive

    Lifescience Database Archive (English)

    Full Text Available ntibody=Junb || treatment=LPS || time=30 min || chip antibody manufacturer 1=Abcam || chip antibody catalog ...number 1=ab28838 || chip antibody manufacturer 2=Santa Cruz || chip antibody catalog number 2=sc-46 http://d

  7. Experiment list: SRX122522 [Chip-atlas[Archive

    Lifescience Database Archive (English)

    Full Text Available ntibody=Irf2 || treatment=LPS || time=60 min || chip antibody manufacturer 1=Abcam || chip antibody catalog ...number 1=ab65048 || chip antibody manufacturer 2=Santa Cruz || chip antibody catalog number 2=sc-498 http://

  8. Experiment list: SRX122416 [Chip-atlas[Archive

    Lifescience Database Archive (English)

    Full Text Available ntibody=Junb || treatment=LPS || time=60 min || chip antibody manufacturer 1=Abcam || chip antibody catalog ...number 1=ab28838 || chip antibody manufacturer 2=Santa Cruz || chip antibody catalog number 2=sc-46 http://d

  9. Experiment list: SRX122417 [Chip-atlas[Archive

    Lifescience Database Archive (English)

    Full Text Available ntibody=Junb || treatment=LPS || time=60 min || chip antibody manufacturer 1=Abcam || chip antibody catalog ...number 1=ab28838 || chip antibody manufacturer 2=Santa Cruz || chip antibody catalog number 2=sc-46 http://d

  10. Experiment list: SRX122406 [Chip-atlas[Archive

    Lifescience Database Archive (English)

    Full Text Available antibody=Irf1 || treatment=LPS || time=0 min || chip antibody manufacturer 1=Abcam || chip antibody catalog... number 1=ab52520 || chip antibody manufacturer 2=Santa Cruz || chip antibody catalog number 2=sc-640 http:/

  11. Experiment list: SRX122521 [Chip-atlas[Archive

    Lifescience Database Archive (English)

    Full Text Available ntibody=Irf2 || treatment=LPS || time=30 min || chip antibody manufacturer 1=Abcam || chip antibody catalog ...number 1=ab65048 || chip antibody manufacturer 2=Santa Cruz || chip antibody catalog number 2=sc-498 http://

  12. Experiment list: SRX122566 [Chip-atlas[Archive

    Lifescience Database Archive (English)

    Full Text Available antibody=Stat2 || treatment=LPS || time=0 min || chip antibody manufacturer 1=Abcam || chip antibody catalog... number 1=ab53149 || chip antibody manufacturer 2=Santa Cruz || chip antibody catalog number 2=sc-839 http:/

  13. Experiment list: SRX122415 [Chip-atlas[Archive

    Lifescience Database Archive (English)

    Full Text Available ntibody=Junb || treatment=LPS || time=30 min || chip antibody manufacturer 1=Abcam || chip antibody catalog ...number 1=ab28838 || chip antibody manufacturer 2=Santa Cruz || chip antibody catalog number 2=sc-46 http://d

  14. Experiment list: SRX214074 [Chip-atlas[Archive

    Lifescience Database Archive (English)

    Full Text Available ge=Undifferentiated || treatment=Overexpress Sox17EK-V5 tagged || cell line=KH2 || chip antibody 1=none || chip antibody manufacture...r 1=none || chip antibody 2=V5 || chip antibody manufacture

  15. Experiment list: SRX214072 [Chip-atlas[Archive

    Lifescience Database Archive (English)

    Full Text Available e=Undifferentiated || treatment=Overexpress Sox2KE-V5 tagged || cell line=KH2 || chip antibody 1=none || chip antibody manufacture...r 1=none || chip antibody 2=V5 || chip antibody manufacture

  16. Experiment list: SRX122565 [Chip-atlas[Archive

    Lifescience Database Archive (English)

    Full Text Available antibody=Stat2 || treatment=LPS || time=0 min || chip antibody manufacturer 1=Abcam || chip antibody catalog... number 1=ab53149 || chip antibody manufacturer 2=Santa Cruz || chip antibody catalog number 2=sc-839 http:/

  17. Experiment list: SRX214070 [Chip-atlas[Archive

    Lifescience Database Archive (English)

    Full Text Available =Undifferentiated || treatment=Overexpress Sox2-V5 tagged || cell line=KH2 || chip antibody 1=none || chip antibody manufacture...r 1=none || chip antibody 2=V5 || chip antibody manufacturer 2

  18. ALICE Silicon Pixel Detector

    CERN Multimedia

    2003-01-01

    The Silicon Pixel Detector (SPD) is part of the Inner Tracking System (ITS) of the ALICE experiment : . SPD Structure . Bump Bonding . Test beam . ALICE1LHCb Readout Chip . Chip Tests . Data from the SPD

  19. A 1,000 Frames/s Programmable Vision Chip with Variable Resolution and Row-Pixel-Mixed Parallel Image Processors.

    Science.gov (United States)

    Lin, Qingyu; Miao, Wei; Zhang, Wancheng; Fu, Qiuyu; Wu, Nanjian

    2009-01-01

    A programmable vision chip with variable resolution and row-pixel-mixed parallel image processors is presented. The chip consists of a CMOS sensor array, with row-parallel 6-bit Algorithmic ADCs, row-parallel gray-scale image processors, pixel-parallel SIMD Processing Element (PE) array, and instruction controller. The resolution of the image in the chip is variable: high resolution for a focused area and low resolution for general view. It implements gray-scale and binary mathematical morphology algorithms in series to carry out low-level and mid-level image processing and sends out features of the image for various applications. It can perform image processing at over 1,000 frames/s (fps). A prototype chip with 64 × 64 pixels resolution and 6-bit gray-scale image is fabricated in 0.18 μm Standard CMOS process. The area size of chip is 1.5 mm × 3.5 mm. Each pixel size is 9.5 μm × 9.5 μm and each processing element size is 23 μm × 29 μm. The experiment results demonstrate that the chip can perform low-level and mid-level image processing and it can be applied in the real-time vision applications, such as high speed target tracking.

  20. Development of edgeless silicon pixel sensors on p-type substrate for the ATLAS high-luminosity upgrade

    Energy Technology Data Exchange (ETDEWEB)

    Calderini, G. [Laboratoire de Physique Nucléaire et des Hautes Energies (LPNHE), Paris (France); Dipartimento di Fisica E. Fermi, Universitá di Pisa, Pisa (Italy); Bagolini, A. [Fondazione Bruno Kessler, Centro per i Materiali e i Microsistemi (FBK-CMM), Povo di Trento (Italy); Bomben, M. [Laboratoire de Physique Nucléaire et des Hautes Energies (LPNHE), Paris (France); Boscardin, M. [Fondazione Bruno Kessler, Centro per i Materiali e i Microsistemi (FBK-CMM), Povo di Trento (Italy); Bosisio, L. [Università degli studi di Trieste and INFN-Trieste (Italy); Chauveau, J. [Laboratoire de Physique Nucléaire et des Hautes Energies (LPNHE), Paris (France); Giacomini, G. [Fondazione Bruno Kessler, Centro per i Materiali e i Microsistemi (FBK-CMM), Povo di Trento (Italy); La Rosa, A. [Section de Physique (DPNC), Universitè de Geneve, Geneve (Switzerland); Marchiori, G. [Laboratoire de Physique Nucléaire et des Hautes Energies (LPNHE), Paris (France); Zorzi, N. [Fondazione Bruno Kessler, Centro per i Materiali e i Microsistemi (FBK-CMM), Povo di Trento (Italy)

    2014-11-21

    In view of the LHC upgrade for the high luminosity phase (HL-LHC), the ATLAS experiment is planning to replace the inner detector with an all-silicon system. The n-in-p bulk technology represents a valid solution for the modules of most of the layers, given the significant radiation hardness of this option and the reduced cost. The large area necessary to instrument the outer layers will demand to tile the sensors, a solution for which the inefficient region at the border of each sensor needs to be reduced to the minimum size. This paper reports on a joint R and D project by the ATLAS LPNHE Paris group and FBK Trento on a novel n-in-p edgeless planar pixel design, based on the deep-trench process available at FBK.

  1. Selected results from the static characterization of edgeless n-on-p planar pixel sensors for ATLAS upgrades

    CERN Document Server

    Giacomini, Gabriele; Bomben, Marco; Boscardin, Maurizio; Bosisio, Luciano; Calderini, Giovanni; Chauveau, Jacques; La Rosa, Alessandro; Marchiori, Giovanni; Zorzi, Nicola

    2014-01-01

    In view of the LHC upgrade for the High Luminosity Phase (HL-LHC), the ATLAS experiment is planning to replace the Inner Detector with an all-Silicon system. The n-on-p technology represents a valid solution for the modules of most of the layers, given the significant radiation hardness of this option and the reduced cost. There is also the demand to reduce the inactive areas to a minimum. The ATLAS LPNHE Paris group and FBK Trento started a collaboration for the development on a novel n-on-p edgeless planar pixel design, based on the deep-trench process which can cope with all these requirements. This paper reports selected results from the electrical characterization, both before and after irradiation, of test structures from the first production batch.

  2. Development of Edgeless Silicon Pixel Sensors on p-type substrate for the ATLAS High-Luminosity Upgrade

    CERN Document Server

    Calderini, G; Bomben, M; Boscardin, M; Bosisio, L; Chauveau, J; Giacomini, G; La Rosa, A; Marchiori, G; Zorzi, N

    2014-01-01

    In view of the LHC upgrade for the high luminosity phase (HL-LHC), the ATLAS experiment is planning to replace the inner detector with an all-silicon system. The n-in-p bulk technology represents a valid solution for the modules of most of the layers, given the significant radiation hardness of this option and the reduced cost. The large area necessary to instrument the outer layers will demand to tile the sensors, a solution for which the inefficient region at the border of each sensor needs to be reduced to the minimum size. This paper reports on a joint R&D project by the ATLAS LPNHE Paris group and FBK Trento on a novel n-in-p edgeless planar pixel design, based on the deep-trench process available at FBK.

  3. Performance of Edgeless Silicon Pixel Sensors on p-type substrate for the ATLAS High-Luminosity Upgrade

    CERN Document Server

    INSPIRE-00052711; Boscardin, Maurizio; Bosisio, Luciano; Calderini, Giovanni; Chauveau, Jacques; Ducourthial, Audrey; Giacomini, Gabriele; Marchiori, Giovanni; Zorzi, Nicola

    2016-01-01

    In view of the LHC upgrade phases towards the High Luminosity LHC (HL-LHC), the ATLAS experiment plans to upgrade the Inner Detector with an all-silicon system. The n-on-p silicon technology is a promising candidate to achieve a large area instrumented with pixel sensors, since it is radiation hard and cost effective. The paper reports on the performance of novel n-on-p edgeless planar pixel sensors produced by FBK-CMM, making use of the active trench for the reduction of the dead area at the periphery of the device. After discussing the sensor technology an overview of the first beam test results will be given.

  4. Development of Edgeless Silicon Pixel Sensors on p-type substrate for the ATLAS High-Luminosity Upgrade

    Energy Technology Data Exchange (ETDEWEB)

    Calderini, G. [Laboratoire de Physique Nucléaire et des Hautes Energies (LPNHE), Paris (France); Dipartimento di Fisica E. Fermi, Universitá di Pisa, Pisa (Italy); Bagolini, A. [Fondazione Bruno Kessler, Centro per i Materiali e i Microsistemi (FBK-CMM), Povo di Trento (Italy); Beccherle, R. [Istituto Nazionale di Fisica Nucleare, Sez. di Pisa (Italy); Bomben, M. [Laboratoire de Physique Nucléaire et des Hautes Energies (LPNHE), Paris (France); Boscardin, M. [Fondazione Bruno Kessler, Centro per i Materiali e i Microsistemi (FBK-CMM), Povo di Trento (Italy); Bosisio, L. [Università degli studi di Trieste (Italy); INFN-Trieste (Italy); Chauveau, J. [Laboratoire de Physique Nucléaire et des Hautes Energies (LPNHE), Paris (France); Giacomini, G. [Fondazione Bruno Kessler, Centro per i Materiali e i Microsistemi (FBK-CMM), Povo di Trento (Italy); La Rosa, A. [Section de Physique (DPNC), Universitè de Geneve, Geneve (Switzerland); Marchiori, G. [Laboratoire de Physique Nucléaire et des Hautes Energies (LPNHE), Paris (France); Zorzi, N. [Fondazione Bruno Kessler, Centro per i Materiali e i Microsistemi (FBK-CMM), Povo di Trento (Italy)

    2016-09-21

    In view of the LHC upgrade phases towards the High Luminosity LHC (HL-LHC), the ATLAS experiment plans to upgrade the Inner Detector with an all-silicon system. The n-on-p silicon technology is a promising candidate to achieve a large area instrumented with pixel sensors, since it is radiation hard and cost effective. The presentation describes the performance of novel n-in-p edgeless planar pixel sensors produced by FBK-CMM, making use of the active trench for the reduction of the dead area at the periphery of the device. After discussing the sensor technology, some feedback from preliminary results of the first beam test will be discussed.

  5. New Generation GridPix: Development and characterisation of pixelated gaseous detectors based on the Timepix3 chip

    CERN Document Server

    AUTHOR|(CDS)2082958; Hessey, Nigel

    Due to the increasing demands of high energy physics experiments there is a need for particle detectors which enable high precision measurements. In this regard, the GridPix detector is a novel detector concept which combines the benefits of a pixel chip with an integrated gas amplification structure. The resulting unit is a detector sensitive to single electrons with a great potential for particle tracking and energy loss measurements. This thesis is focusing on the development of a new generation of GridPix detectors based on the Timepix3 chip, which implements a high resolution Time to Digital Converter (TDC) in each pixel. After an introductory chapter describing the motivation behind GridPix, the manuscript presents the physics of gaseous detectors in chapter 2 along with the gaseous detectors used for particle tracking in chapter 3. Chapters 4 and 5 are focusing on the tracking performance of GridPix detectors. Chapter 4 presents results obtained with a GridPix detector based on a small scale prototy...

  6. Experiment list: SRX122556 [Chip-atlas[Archive

    Lifescience Database Archive (English)

    Full Text Available chip antibody=Stat1 || treatment=LPS || time=120 min || chip antibody manufacturer 1=Santa Cruz || chip anti...body catalog number 1=sc-346 || chip antibody manufacturer 2=Bethyl || chip antibody catalog number 2=A302-7

  7. Experiment list: SRX122465 [Chip-atlas[Archive

    Lifescience Database Archive (English)

    Full Text Available 6 || chip antibody=Relb || treatment=LPS || time=120 min || chip antibody manufacturer 1=Bethyl || chip anti...body catalog number 1=A302-183A || chip antibody manufacturer 2=Santa Cruz || chip antibody catalog number 2

  8. Experiment list: SRX122555 [Chip-atlas[Archive

    Lifescience Database Archive (English)

    Full Text Available chip antibody=Stat1 || treatment=LPS || time=120 min || chip antibody manufacturer 1=Santa Cruz || chip anti...body catalog number 1=sc-346 || chip antibody manufacturer 2=Bethyl || chip antibody catalog number 2=A302-7

  9. High-voltage pixel detectors in commercial CMOS technologies for ATLAS, CLIC and Mu3e experiments

    CERN Document Server

    Peric, Ivan; Backhaus, Malte; Barbero, Marlon; Benoit, Mathieu; Berger, Niklaus; Bompard, Frederic; Breugnon, Patrick; Clemens, Jean-Claude; Dannheim, Dominik; Dierlamm, Alexander; Feigl, Simon; Fischer, Peter; Fougeron, Denis; Garcia-Sciveres, Maurice; Heim, Timon; Hügging, Fabian; Kiehn, Moritz; Kreidl, Christian; Krüger, Hans; La Rosa, Alessandro; Liu, Jian; Lütticke, Florian; Mariñas, Carlos; Meng, Lingxin; Miucci, Antonio; Münstermann, Daniel; Nguyen, Hong Hanh; Obermann, Theresa; Pangaud, Patrick; Perrevoort, Ann-Kathrin; Rozanov, Alexandre; Schöning, André; Schwenker, Benjamin; Wiedner, Dirk

    2013-01-01

    High-voltage particle detectors in commercial CMOS technologies are a detector family that allows implementation of low-cost, thin and radiation-tolerant detectors with a high time resolution. In the R/D phase of the development, a radiation tolerance of 10 15 n eq = cm 2 , nearly 100% detection ef fi ciency and a spatial resolution of about 3 μ m were demonstrated. Since 2011 the HV detectors have fi rst applications: the technology is presently the main option for the pixel detector of the planned Mu3e experiment at PSI (Switzerland). Several prototype sensors have been designed in a standard 180 nm HV CMOS process and successfully tested. Thanks to its high radiation tolerance, the HV detectors are also seen at CERN as a promising alternative to the standard options for ATLAS upgrade and CLIC. In order to test the concept, within ATLAS upgrade R/D, we are currently exploring an active pixel detector demonstrator HV2FEI4; also implemented in the 180 nm HV process

  10. Prototyping of larger structures for the Phase-II upgrade of the pixel detector of the ATLAS experiment

    CERN Document Server

    Alvarez Feito, Diego; The ATLAS collaboration

    2017-01-01

    For the high luminosity era of the Large Hadron Collider (HL-LHC) it is forseen to replace the current inner tracker of the ATLAS experiment with a new detector to cope with the occuring increase in occupancy, bandwidth and radiation damage. It will consist of an inner pixel and outer strip detector aiming to provide tracking coverage up to |η|<4. The layout of the pixel detector is foreseen to consist of five layers of pixel silicon sensor modules in the central region and several ring-shaped layers in the forward region. It results in up to 14 m² of silicon depending on the selected layout. Beside the challenge of radiation hardness and high-rate capable silicon sensors and readout electronics many system aspects have to be considered for a fully functional detector. Both stable and low mass mechanical structures and services are important. Within the collaboration a large effort is started to prototype larger detector structures for both the central and forward region of the detector. The aspect of sy...

  11. Design and development of the IBL-BOC firmware for the ATLAS Pixel IBL optical datalink system

    CERN Document Server

    AUTHOR|(INSPIRE)INSPIRE-00356268

    The Insertable $b$-Layer (IBL) is the first upgrade of the ATLAS Pixel detector at the LHC. It will be installed in the Pixel detector in 2013. The IBL will use a new sensor and readout technology, therefore the readout components of the current Pixel detector are redesigned for the readout of the IBL. In this diploma thesis the design and development of the firmware for the new IBL Back-of-Crate card (IBL-BOC) are described. The IBL-BOC is located on the off-detector side of the readout and performs the optical-electrical conversion and vice versa for the optical connection to and from the detector. To process the data transmitted to and received from the detector, the IBL-BOC uses multiple Field Programmable Gate Arrays (FPGA). The transmitted signal is a 40~Mb/s BiPhase Mark (BPM) encoded data stream, providing the timing, trigger and control to the detector. The received signal is a 160~Mb/s 8b10b encoded data stream, containing data from the detector. The IBL-BOC encodes and decodes these data streams. T...

  12. Experiment list: SRX122557 [Chip-atlas[Archive

    Lifescience Database Archive (English)

    Full Text Available hip antibody=Stat1 || treatment=LPS || time=120 min || chip antibody manufacturer 1=Santa Cruz || chip antib...ody catalog number 1=sc-346 || chip antibody manufacturer 2=Bethyl || chip antibody catalog number 2=A302-75

  13. Experiment list: SRX122567 [Chip-atlas[Archive

    Lifescience Database Archive (English)

    Full Text Available p antibody=Stat2 || treatment=LPS || time=120 min || chip antibody manufacturer 1=Abcam || chip antibody cat...alog number 1=ab53149 || chip antibody manufacturer 2=Santa Cruz || chip antibody catalog number 2=sc-839 ht

  14. Experiment list: SRX122552 [Chip-atlas[Archive

    Lifescience Database Archive (English)

    Full Text Available ip antibody=Stat1 || treatment=LPS || time=120 min || chip antibody manufacturer 1=Santa Cruz || chip antibo...dy catalog number 1=sc-346 || chip antibody manufacturer 2=Bethyl || chip antibody catalog number 2=A302-753

  15. Experiment list: SRX122474 [Chip-atlas[Archive

    Lifescience Database Archive (English)

    Full Text Available p antibody=Runx1 || treatment=LPS || time=60 min || chip antibody manufacturer 1=Abcam || chip antibody cata...log number 1=ab61753 || chip antibody manufacturer 2=Santa Cruz || chip antibody catalog number 2=sc-8564 ht

  16. Experiment list: SRX122573 [Chip-atlas[Archive

    Lifescience Database Archive (English)

    Full Text Available antibody=Stat2 || treatment=LPS || time=60 min || chip antibody manufacturer 1=Abcam || chip antibody catal...og number 1=ab53149 || chip antibody manufacturer 2=Santa Cruz || chip antibody catalog number 2=sc-839 http

  17. Experiment list: SRX122492 [Chip-atlas[Archive

    Lifescience Database Archive (English)

    Full Text Available ntibody=Atf3 || treatment=LPS || time=60 min || chip antibody manufacturer 1=Santa Cruz || chip antibody cat...alog number 1=sc-188 || chip antibody manufacturer 2=Abcam || chip antibody catalog number 2=ab70005-100 htt

  18. Experiment list: SRX122493 [Chip-atlas[Archive

    Lifescience Database Archive (English)

    Full Text Available antibody=Atf4 || treatment=LPS || time=120 min || chip antibody manufacturer 1=Abcam || chip antibody catal...og number 1=ab28830-100 || chip antibody manufacturer 2=Santa Cruz || chip antibody catalog number 2=sc-200

  19. Experiment list: SRX122471 [Chip-atlas[Archive

    Lifescience Database Archive (English)

    Full Text Available ip antibody=Rela || treatment=LPS || time=60 min || chip antibody manufacturer 1=Bethyl || chip antibody cat...alog number 1=A301-824A || chip antibody manufacturer 2=Santa Cruz || chip antibody catalog number 2=sc-372

  20. Experiment list: SRX122518 [Chip-atlas[Archive

    Lifescience Database Archive (English)

    Full Text Available antibody=Irf2 || treatment=LPS || time=120 min || chip antibody manufacturer 1=Abcam || chip antibody catalo...g number 1=ab65048 || chip antibody manufacturer 2=Santa Cruz || chip antibody catalog number 2=sc-498 http:

  1. Experiment list: SRX214082 [Chip-atlas[Archive

    Lifescience Database Archive (English)

    Full Text Available facturer 1=Santa Cruz || chip antibody 2=V5 || chip antibody manufacture...age=Undifferentiated || treatment=Overexpress Sox17EK-V5 tagged || cell line=KH2 || chip antibody 1=Pou5f1/Oct4 || chip antibody manu

  2. Experiment list: SRX122488 [Chip-atlas[Archive

    Lifescience Database Archive (English)

    Full Text Available antibody=Atf3 || treatment=LPS || time=120 min || chip antibody manufacturer 1=Santa Cruz || chip antibody c...atalog number 1=sc-188 || chip antibody manufacturer 2=Abcam || chip antibody catalog number 2=ab70005-100 h

  3. Experiment list: SRX122549 [Chip-atlas[Archive

    Lifescience Database Archive (English)

    Full Text Available ip antibody=Stat1 || treatment=LPS || time=0 min || chip antibody manufacturer 1=Santa Cruz || chip antibody... catalog number 1=sc-346 || chip antibody manufacturer 2=Bethyl || chip antibody catalog number 2=A302-753A

  4. Experiment list: SRX122410 [Chip-atlas[Archive

    Lifescience Database Archive (English)

    Full Text Available ntibody=Junb || treatment=LPS || time=0 min || chip antibody manufacturer 1=Abcam || chip antibody catalog n...umber 1=ab28838 || chip antibody manufacturer 2=Santa Cruz || chip antibody catalog number 2=sc-46 http://db

  5. Experiment list: SRX122554 [Chip-atlas[Archive

    Lifescience Database Archive (English)

    Full Text Available ip antibody=Stat1 || treatment=LPS || time=120 min || chip antibody manufacturer 1=Santa Cruz || chip antibo...dy catalog number 1=sc-346 || chip antibody manufacturer 2=Bethyl || chip antibody catalog number 2=A302-753

  6. Experiment list: SRX214078 [Chip-atlas[Archive

    Lifescience Database Archive (English)

    Full Text Available =Undifferentiated || treatment=Overexpress Sox2-V5 tagged || cell line=KH2 || chip antibody 1=Pou5f1/Oct4 || chip antibody manufactur...er 1=Santa Cruz || chip antibody 2=V5 || chip antibody manufacture

  7. Experiment list: SRX122484 [Chip-atlas[Archive

    Lifescience Database Archive (English)

    Full Text Available ntibody=Atf3 || treatment=LPS || time=0 min || chip antibody manufacturer 1=Santa Cruz || chip antibody cata...log number 1=sc-188 || chip antibody manufacturer 2=Abcam || chip antibody catalog number 2=ab70005-100 http

  8. Experiment list: SRX122544 [Chip-atlas[Archive

    Lifescience Database Archive (English)

    Full Text Available antibody=Stat1 || treatment=LPS || time=0 min || chip antibody manufacturer 1=Santa Cruz || chip antibody c...atalog number 1=sc-346 || chip antibody manufacturer 2=Bethyl || chip antibody catalog number 2=A302-753A ht

  9. Experiment list: SRX122472 [Chip-atlas[Archive

    Lifescience Database Archive (English)

    Full Text Available antibody=Runx1 || treatment=LPS || time=0 min || chip antibody manufacturer 1=Abcam || chip antibody catalo...g number 1=ab61753 || chip antibody manufacturer 2=Santa Cruz || chip antibody catalog number 2=sc-8564 http

  10. Experiment list: SRX122491 [Chip-atlas[Archive

    Lifescience Database Archive (English)

    Full Text Available ntibody=Atf3 || treatment=LPS || time=60 min || chip antibody manufacturer 1=Santa Cruz || chip antibody cat...alog number 1=sc-188 || chip antibody manufacturer 2=Abcam || chip antibody catalog number 2=ab70005-100 htt

  11. Experiment list: SRX122568 [Chip-atlas[Archive

    Lifescience Database Archive (English)

    Full Text Available ip antibody=Stat2 || treatment=LPS || time=120 min || chip antibody manufacturer 1=Abcam || chip antibody ca...talog number 1=ab53149 || chip antibody manufacturer 2=Santa Cruz || chip antibody catalog number 2=sc-839 h

  12. Experiment list: SRX122548 [Chip-atlas[Archive

    Lifescience Database Archive (English)

    Full Text Available ip antibody=Stat1 || treatment=LPS || time=0 min || chip antibody manufacturer 1=Santa Cruz || chip antibody... catalog number 1=sc-346 || chip antibody manufacturer 2=Bethyl || chip antibody catalog number 2=A302-753A

  13. Experiment list: SRX122510 [Chip-atlas[Archive

    Lifescience Database Archive (English)

    Full Text Available antibody=Egr1 || treatment=LPS || time=0 min || chip antibody manufacturer 1=Abcam || chip antibody catalog... number 1=ab54966-100 || chip antibody manufacturer 2=Santa Cruz || chip antibody catalog number 2=sc-110 ht

  14. Experiment list: SRX214083 [Chip-atlas[Archive

    Lifescience Database Archive (English)

    Full Text Available ufacturer 1=Santa Cruz || chip antibody 2=V5 || chip antibody manufacture...tage=Undifferentiated || treatment=Overexpress Sox17EK-V5 tagged || cell line=KH2 || chip antibody 1=Pou5f1/Oct4 || chip antibody man

  15. Experiment list: SRX122545 [Chip-atlas[Archive

    Lifescience Database Archive (English)

    Full Text Available antibody=Stat1 || treatment=LPS || time=0 min || chip antibody manufacturer 1=Santa Cruz || chip antibody c...atalog number 1=sc-346 || chip antibody manufacturer 2=Bethyl || chip antibody catalog number 2=A302-753A ht

  16. Experiment list: SRX122468 [Chip-atlas[Archive

    Lifescience Database Archive (English)

    Full Text Available antibody=Rela || treatment=LPS || time=0 min || chip antibody manufacturer 1=Bethyl || chip antibody catalo...g number 1=A301-824A || chip antibody manufacturer 2=Santa Cruz || chip antibody catalog number 2=sc-372 htt

  17. Experiment list: SRX122470 [Chip-atlas[Archive

    Lifescience Database Archive (English)

    Full Text Available p antibody=Rela || treatment=LPS || time=30 min || chip antibody manufacturer 1=Bethyl || chip antibody cata...log number 1=A301-824A || chip antibody manufacturer 2=Santa Cruz || chip antibody catalog number 2=sc-372 h

  18. Experiment list: SRX122547 [Chip-atlas[Archive

    Lifescience Database Archive (English)

    Full Text Available antibody=Stat1 || treatment=LPS || time=0 min || chip antibody manufacturer 1=Santa Cruz || chip antibody c...atalog number 1=sc-346 || chip antibody manufacturer 2=Bethyl || chip antibody catalog number 2=A302-753A ht

  19. Experiment list: SRX122550 [Chip-atlas[Archive

    Lifescience Database Archive (English)

    Full Text Available antibody=Stat1 || treatment=LPS || time=0 min || chip antibody manufacturer 1=Santa Cruz || chip antibody ca...talog number 1=sc-346 || chip antibody manufacturer 2=Bethyl || chip antibody catalog number 2=A302-753A htt

  20. Experiment list: SRX122511 [Chip-atlas[Archive

    Lifescience Database Archive (English)

    Full Text Available ip antibody=Egr1 || treatment=LPS || time=120 min || chip antibody manufacturer 1=Abcam || chip antibody cat...alog number 1=ab54966-100 || chip antibody manufacturer 2=Santa Cruz || chip antibody catalog number 2=sc-11

  1. Experiment list: SRX122466 [Chip-atlas[Archive

    Lifescience Database Archive (English)

    Full Text Available p antibody=Relb || treatment=LPS || time=30 min || chip antibody manufacturer 1=Bethyl || chip antibody cata...log number 1=A302-183A || chip antibody manufacturer 2=Santa Cruz || chip antibody catalog number 2=sc-226 h

  2. Experiment list: SRX214084 [Chip-atlas[Archive

    Lifescience Database Archive (English)

    Full Text Available turer 1=Santa Cruz || chip antibody 2=V5 || chip antibody manufacture...ge=Undifferentiated || treatment=Overexpress Sox17-V5 tagged || cell line=KH2 || chip antibody 1=Pou5f1/Oct4 || chip antibody manufac

  3. Experiment list: SRX122490 [Chip-atlas[Archive

    Lifescience Database Archive (English)

    Full Text Available ntibody=Atf3 || treatment=LPS || time=30 min || chip antibody manufacturer 1=Santa Cruz || chip antibody cat...alog number 1=sc-188 || chip antibody manufacturer 2=Abcam || chip antibody catalog number 2=ab70005-100 htt

  4. Experiment list: SRX122571 [Chip-atlas[Archive

    Lifescience Database Archive (English)

    Full Text Available antibody=Stat2 || treatment=LPS || time=30 min || chip antibody manufacturer 1=Abcam || chip antibody catal...og number 1=ab53149 || chip antibody manufacturer 2=Santa Cruz || chip antibody catalog number 2=sc-839 http

  5. Experiment list: SRX122517 [Chip-atlas[Archive

    Lifescience Database Archive (English)

    Full Text Available antibody=Irf2 || treatment=LPS || time=120 min || chip antibody manufacturer 1=Abcam || chip antibody catalo...g number 1=ab65048 || chip antibody manufacturer 2=Santa Cruz || chip antibody catalog number 2=sc-498 http:

  6. Experiment list: SRX122546 [Chip-atlas[Archive

    Lifescience Database Archive (English)

    Full Text Available p antibody=Stat1 || treatment=LPS || time=0 min || chip antibody manufacturer 1=Santa Cruz || chip antibody ...catalog number 1=sc-346 || chip antibody manufacturer 2=Bethyl || chip antibody catalog number 2=A302-753A h

  7. Experiment list: SRX122519 [Chip-atlas[Archive

    Lifescience Database Archive (English)

    Full Text Available antibody=Irf2 || treatment=LPS || time=120 min || chip antibody manufacturer 1=Abcam || chip antibody catalo...g number 1=ab65048 || chip antibody manufacturer 2=Santa Cruz || chip antibody catalog number 2=sc-498 http:

  8. Experiment list: SRX122569 [Chip-atlas[Archive

    Lifescience Database Archive (English)

    Full Text Available ip antibody=Stat2 || treatment=LPS || time=120 min || chip antibody manufacturer 1=Abcam || chip antibody ca...talog number 1=ab53149 || chip antibody manufacturer 2=Santa Cruz || chip antibody catalog number 2=sc-839 h

  9. Experiment list: SRX122562 [Chip-atlas[Archive

    Lifescience Database Archive (English)

    Full Text Available antibody=Stat1 || treatment=LPS || time=30 min || chip antibody manufacturer 1=Santa Cruz || chip antibody ...catalog number 1=sc-346 || chip antibody manufacturer 2=Bethyl || chip antibody catalog number 2=A302-753A h

  10. Experiment list: SRX122572 [Chip-atlas[Archive

    Lifescience Database Archive (English)

    Full Text Available antibody=Stat2 || treatment=LPS || time=30 min || chip antibody manufacturer 1=Abcam || chip antibody catal...og number 1=ab53149 || chip antibody manufacturer 2=Santa Cruz || chip antibody catalog number 2=sc-839 http

  11. Experiment list: SRX122469 [Chip-atlas[Archive

    Lifescience Database Archive (English)

    Full Text Available hip antibody=Rela || treatment=LPS || time=120 min || chip antibody manufacturer 1=Bethyl || chip antibody c...atalog number 1=A301-824A || chip antibody manufacturer 2=Santa Cruz || chip antibody catalog number 2=sc-37

  12. Experiment list: SRX214080 [Chip-atlas[Archive

    Lifescience Database Archive (English)

    Full Text Available cturer 1=Santa Cruz || chip antibody 2=V5 || chip antibody manufacture...ge=Undifferentiated || treatment=Overexpress Sox2KE-V5 tagged || cell line=KH2 || chip antibody 1=Pou5f1/Oct4 || chip antibody manufa

  13. Experiment list: SRX214079 [Chip-atlas[Archive

    Lifescience Database Archive (English)

    Full Text Available Undifferentiated || treatment=Overexpress Sox2-V5 tagged || cell line=KH2 || chip antibody 1=Pou5f1/Oct4 || chip antibody manufacture...r 1=Santa Cruz || chip antibody 2=V5 || chip antibody manufacture

  14. Experiment list: SRX122494 [Chip-atlas[Archive

    Lifescience Database Archive (English)

    Full Text Available hip antibody=Atf4 || treatment=LPS || time=120 min || chip antibody manufacturer 1=Abcam || chip antibody ca...talog number 1=ab28830-100 || chip antibody manufacturer 2=Santa Cruz || chip antibody catalog number 2=sc-2

  15. Experiment list: SRX122498 [Chip-atlas[Archive

    Lifescience Database Archive (English)

    Full Text Available antibody=Rel || treatment=LPS || time=60 min || chip antibody manufacturer 1=Santa Cruz || chip antibody cat...alog number 1=sc-71 || chip antibody manufacturer 2=Santa Cruz || chip antibody catalog number 2=sc-70 http:

  16. Experiment list: SRX122570 [Chip-atlas[Archive

    Lifescience Database Archive (English)

    Full Text Available p antibody=Stat2 || treatment=LPS || time=120 min || chip antibody manufacturer 1=Abcam || chip antibody cat...alog number 1=ab53149 || chip antibody manufacturer 2=Santa Cruz || chip antibody catalog number 2=sc-839 ht

  17. Experiment list: SRX186172 [Chip-atlas[Archive

    Lifescience Database Archive (English)

    Full Text Available 1=YY1 || chip antibody manufacturer 1=Abcam || chip antibody 2=YY1 || chip antibody manufacturer 2=Santa Cru...ip-Seq; Mus musculus; ChIP-Seq source_name=Rag1 -/- pro-B cells || chip antibody

  18. Experiment list: SRX122560 [Chip-atlas[Archive

    Lifescience Database Archive (English)

    Full Text Available ip antibody=Stat1 || treatment=LPS || time=120 min || chip antibody manufacturer 1=Santa Cruz || chip antibo...dy catalog number 1=sc-346 || chip antibody manufacturer 2=Bethyl || chip antibody catalog number 2=A302-753

  19. Experiment list: SRX214077 [Chip-atlas[Archive

    Lifescience Database Archive (English)

    Full Text Available erentiated || treatment=Overexpress Sox17_V5 tagged || cell line=KH2 || chip antibody 1=Sox17 || chip antibody manufacture...r 1=R&D || chip antibody 2=V5 || chip antibody manufacturer 2=Invit

  20. Experiment list: SRX214068 [Chip-atlas[Archive

    Lifescience Database Archive (English)

    Full Text Available inoic acid || cell line=F9 || chip antibody 1=Pou5f1/Oct4 || chip antibody manufacturer 1=Santa Cruz || chip... antibody 2=none || chip antibody manufacturer 2=none http://dbarchive.biosciencedbc.jp/kyushu-u/mm9/eachDat

  1. Experiment list: SRX122473 [Chip-atlas[Archive

    Lifescience Database Archive (English)

    Full Text Available ip antibody=Runx1 || treatment=LPS || time=120 min || chip antibody manufacturer 1=Abcam || chip antibody ca...talog number 1=ab61753 || chip antibody manufacturer 2=Santa Cruz || chip antibody catalog number 2=sc-8564

  2. Experiment list: SRX122563 [Chip-atlas[Archive

    Lifescience Database Archive (English)

    Full Text Available antibody=Stat1 || treatment=LPS || time=60 min || chip antibody manufacturer 1=Santa Cruz || chip antibody ...catalog number 1=sc-346 || chip antibody manufacturer 2=Bethyl || chip antibody catalog number 2=A302-753A h

  3. Experiment list: SRX122495 [Chip-atlas[Archive

    Lifescience Database Archive (English)

    Full Text Available ntibody=Rel || treatment=LPS || time=0 min || chip antibody manufacturer 1=Santa Cruz || chip antibody catal...og number 1=sc-71 || chip antibody manufacturer 2=Santa Cruz || chip antibody catalog number 2=sc-70 http://

  4. Experiment list: SRX122514 [Chip-atlas[Archive

    Lifescience Database Archive (English)

    Full Text Available tibody=Irf2 || treatment=LPS || time=0 min || chip antibody manufacturer 1=Abcam || chip antibody catalog nu...mber 1=ab65048 || chip antibody manufacturer 2=Santa Cruz || chip antibody catalog number 2=sc-498 http://db

  5. Experiment list: SRX122464 [Chip-atlas[Archive

    Lifescience Database Archive (English)

    Full Text Available antibody=Relb || treatment=LPS || time=0 min || chip antibody manufacturer 1=Bethyl || chip antibody catalo...g number 1=A302-183A || chip antibody manufacturer 2=Santa Cruz || chip antibody catalog number 2=sc-226 htt

  6. Experiment list: SRX122551 [Chip-atlas[Archive

    Lifescience Database Archive (English)

    Full Text Available antibody=Stat1 || treatment=LPS || time=0 min || chip antibody manufacturer 1=Santa Cruz || chip antibody ca...talog number 1=sc-346 || chip antibody manufacturer 2=Bethyl || chip antibody catalog number 2=A302-753A htt

  7. Experiment list: SRX214081 [Chip-atlas[Archive

    Lifescience Database Archive (English)

    Full Text Available cturer 1=Santa Cruz || chip antibody 2=V5 || chip antibody manufacture...ge=Undifferentiated || treatment=Overexpress Sox2KE-V5 tagged || cell line=KH2 || chip antibody 1=Pou5f1/Oct4 || chip antibody manufa

  8. Experiment list: SRX122409 [Chip-atlas[Archive

    Lifescience Database Archive (English)

    Full Text Available ip antibody=Irf1 || treatment=LPS || time=60 min || chip antibody manufacturer 1=Abcam || chip antibody cata...log number 1=ab52520 || chip antibody manufacturer 2=Santa Cruz || chip antibody catalog number 2=sc-640 htt

  9. Experiment list: SRX122561 [Chip-atlas[Archive

    Lifescience Database Archive (English)

    Full Text Available antibody=Stat1 || treatment=LPS || time=30 min || chip antibody manufacturer 1=Santa Cruz || chip antibody ...catalog number 1=sc-346 || chip antibody manufacturer 2=Bethyl || chip antibody catalog number 2=A302-753A h

  10. Experiment list: SRX122411 [Chip-atlas[Archive

    Lifescience Database Archive (English)

    Full Text Available ntibody=Junb || treatment=LPS || time=0 min || chip antibody manufacturer 1=Abcam || chip antibody catalog n...umber 1=ab28838 || chip antibody manufacturer 2=Santa Cruz || chip antibody catalog number 2=sc-46 http://db

  11. Experiment list: SRX122497 [Chip-atlas[Archive

    Lifescience Database Archive (English)

    Full Text Available antibody=Rel || treatment=LPS || time=30 min || chip antibody manufacturer 1=Santa Cruz || chip antibody cat...alog number 1=sc-71 || chip antibody manufacturer 2=Santa Cruz || chip antibody catalog number 2=sc-70 http:

  12. Experiment list: SRX122558 [Chip-atlas[Archive

    Lifescience Database Archive (English)

    Full Text Available hip antibody=Stat1 || treatment=LPS || time=120 min || chip antibody manufacturer 1=Santa Cruz || chip antib...ody catalog number 1=sc-346 || chip antibody manufacturer 2=Bethyl || chip antibody catalog number 2=A302-75

  13. Experiment list: SRX122564 [Chip-atlas[Archive

    Lifescience Database Archive (English)

    Full Text Available antibody=Stat1 || treatment=LPS || time=60 min || chip antibody manufacturer 1=Santa Cruz || chip antibody ...catalog number 1=sc-346 || chip antibody manufacturer 2=Bethyl || chip antibody catalog number 2=A302-753A h

  14. Experiment list: SRX122516 [Chip-atlas[Archive

    Lifescience Database Archive (English)

    Full Text Available antibody=Irf2 || treatment=LPS || time=120 min || chip antibody manufacturer 1=Abcam || chip antibody catalo...g number 1=ab65048 || chip antibody manufacturer 2=Santa Cruz || chip antibody catalog number 2=sc-498 http:

  15. Experiment list: SRX122487 [Chip-atlas[Archive

    Lifescience Database Archive (English)

    Full Text Available antibody=Atf3 || treatment=LPS || time=120 min || chip antibody manufacturer 1=Santa Cruz || chip antibody c...atalog number 1=sc-188 || chip antibody manufacturer 2=Abcam || chip antibody catalog number 2=ab70005-100 h

  16. Experiment list: SRX122408 [Chip-atlas[Archive

    Lifescience Database Archive (English)

    Full Text Available p antibody=Irf1 || treatment=LPS || time=30 min || chip antibody manufacturer 1=Abcam || chip antibody catal...og number 1=ab52520 || chip antibody manufacturer 2=Santa Cruz || chip antibody catalog number 2=sc-640 http

  17. Experiment list: SRX122513 [Chip-atlas[Archive

    Lifescience Database Archive (English)

    Full Text Available p antibody=Egr1 || treatment=LPS || time=60 min || chip antibody manufacturer 1=Abcam || chip antibody catal...og number 1=ab54966-100 || chip antibody manufacturer 2=Santa Cruz || chip antibody catalog number 2=sc-110

  18. Experiment list: SRX122489 [Chip-atlas[Archive

    Lifescience Database Archive (English)

    Full Text Available ntibody=Atf3 || treatment=LPS || time=30 min || chip antibody manufacturer 1=Santa Cruz || chip antibody cat...alog number 1=sc-188 || chip antibody manufacturer 2=Abcam || chip antibody catalog number 2=ab70005-100 htt

  19. Experiment list: SRX122559 [Chip-atlas[Archive

    Lifescience Database Archive (English)

    Full Text Available ip antibody=Stat1 || treatment=LPS || time=120 min || chip antibody manufacturer 1=Santa Cruz || chip antibo...dy catalog number 1=sc-346 || chip antibody manufacturer 2=Bethyl || chip antibody catalog number 2=A302-753

  20. Experiment list: SRX214076 [Chip-atlas[Archive

    Lifescience Database Archive (English)

    Full Text Available ferentiated || treatment=Overexpress Sox17-V5 tagged || cell line=KH2 || chip antibody 1=Sox17 || chip antibody manufacture...r 1=R&D || chip antibody 2=V5 || chip antibody manufacturer 2=Invi

  1. Experiment list: SRX122467 [Chip-atlas[Archive

    Lifescience Database Archive (English)

    Full Text Available p antibody=Relb || treatment=LPS || time=60 min || chip antibody manufacturer 1=Bethyl || chip antibody cata...log number 1=A302-183A || chip antibody manufacturer 2=Santa Cruz || chip antibody catalog number 2=sc-226 h

  2. Experiment list: SRX122483 [Chip-atlas[Archive

    Lifescience Database Archive (English)

    Full Text Available ntibody=Atf3 || treatment=LPS || time=0 min || chip antibody manufacturer 1=Santa Cruz || chip antibody cata...log number 1=sc-188 || chip antibody manufacturer 2=Abcam || chip antibody catalog number 2=ab70005-100 http

  3. Experiment list: SRX122407 [Chip-atlas[Archive

    Lifescience Database Archive (English)

    Full Text Available ip antibody=Irf1 || treatment=LPS || time=120 min || chip antibody manufacturer 1=Abcam || chip antibody cat...alog number 1=ab52520 || chip antibody manufacturer 2=Santa Cruz || chip antibody catalog number 2=sc-640 ht

  4. Experiment list: SRX122553 [Chip-atlas[Archive

    Lifescience Database Archive (English)

    Full Text Available ip antibody=Stat1 || treatment=LPS || time=120 min || chip antibody manufacturer 1=Santa Cruz || chip antibo...dy catalog number 1=sc-346 || chip antibody manufacturer 2=Bethyl || chip antibody catalog number 2=A302-753

  5. Experiment list: SRX122512 [Chip-atlas[Archive

    Lifescience Database Archive (English)

    Full Text Available p antibody=Egr1 || treatment=LPS || time=30 min || chip antibody manufacturer 1=Abcam || chip antibody catal...og number 1=ab54966-100 || chip antibody manufacturer 2=Santa Cruz || chip antibody catalog number 2=sc-110

  6. Experiment list: SRX122515 [Chip-atlas[Archive

    Lifescience Database Archive (English)

    Full Text Available tibody=Irf2 || treatment=LPS || time=0 min || chip antibody manufacturer 1=Abcam || chip antibody catalog nu...mber 1=ab65048 || chip antibody manufacturer 2=Santa Cruz || chip antibody catalog number 2=sc-498 http://db

  7. Experiment list: SRX122486 [Chip-atlas[Archive

    Lifescience Database Archive (English)

    Full Text Available antibody=Atf3 || treatment=LPS || time=120 min || chip antibody manufacturer 1=Santa Cruz || chip antibody c...atalog number 1=sc-188 || chip antibody manufacturer 2=Abcam || chip antibody catalog number 2=ab70005-100 h

  8. Optimization of transistor size and operating point for the LVDS driver of the ALICE ITS pixel chip

    CERN Document Server

    Froeen, Solveig Marie

    2015-01-01

    The ALICE Inner Tracker System (ITS) will be upgraded during Long Shutdown 2. The tracker layers will be equipped with monolithic pixel sensors chips. A Low Voltage Differential Signalling (LVDS) driver is required for the off chip data transmission. A current mode 1.2 Gb/s LVDS driver based on H-bridge scheme has already been implemented and tested. Although the present driver meets the specifications, a decrease of its power consumption is beneficial for the reduction of the material required for the detector powering and cooling. This report presents the study of a current mode LVDS driver based on H-bridge scheme where the switches are replaced with current sources that can deliver either ON level or OFF level currents. The ON current is the main static power contributor, and its value is set to 4 mA by specifications to have a differential signal of 400 mV over the 100 Ω termination resistor. The second contributor for the static power is the OFF power, which has to be optimized together with the dynami...

  9. Étude des détecteurs planaires pixels durcis aux radiations pour la mise à jour du détecteur de vertex d'ATLAS

    CERN Document Server

    Benoit, Mathieu

    In this work, is presented a study, using TCAD simulation, of the possible methods of designing of a planar pixel sensors by reducing their inactive area and improving their radiation hardness for use in the Insertable B-Layer (IBL) project and for SLHC upgrade phase for the ATLAS experiment. Different physical models available have been studied to develop a coherent model of radiation damage in silicon that can be used to predict silicon pixel sensor behavior after exposure to radiation. The Multi-Guard Ring Structure,a protection structure used in pixel sensor design was studied to obtain guidelines for the reduction of inactive edges detrimental to detector operation while keeping a good sensor behavior through its lifetime in the ATLAS detector. A campaign of measurement of the sensor's process parameters and electrical behavior to validate and calibrate the TCAD simulation models and results are also presented. A model for diode charge collection in highly irradiated environment was developed to explain ...

  10. Direct reading of charge multipliers with a self-triggering CMOS analog chip with 105k pixels at 50 micron pitch

    CERN Document Server

    Bellazzini, R; Minuti, M; Baldini, L; Brez, A; Cavalca, F; Latronico, L; Omodei, N; Massai, M M; Sgro, C; Costa, E; Krummenacher, P S F; De Oliveira, R

    2006-01-01

    We report on a large active area (15x15mm2), high channel density (470 pixels/mm2), self-triggering CMOS analog chip that we have developed as pixelized charge collecting electrode of a Micropattern Gas Detector. This device, which represents a big step forward both in terms of size and performance, is the last version of three generations of custom ASICs of increasing complexity. The CMOS pixel array has the top metal layer patterned in a matrix of 105600 hexagonal pixels at 50 micron pitch. Each pixel is directly connected to the underneath full electronics chain which has been realized in the remaining five metal and two poly-silicon layers of a 0.18 micron VLSI technology. The chip has customizable self-triggering capability and includes a signal pre-processing function for the automatic localization of the event coordinates. In this way it is possible to reduce significantly the readout time and the data volume by limiting the signal output only to those pixels belonging to the region of interest. The ve...

  11. Ultra-light and stable composite structure to support and cool the ATLAS pixel detector barrel electronics modules

    CERN Document Server

    Olcese, M; Castiglioni, G; Cereseto, R; Cuneo, S; Dameri, M; Gemme, C; Glitza, K W; Lenzen, G; Mora, F; Netchaeva, P; Ockenfels, W; Piano, E; Pizzorno, C; Puppo, R; Rebora, A; Rossi, L; Thadome, J; Vernocchi, F; Vigeolas, E; Vinci, A

    2004-01-01

    The design of an ultra light structure, the so-called "stave", to support and cool the sensitive elements of the Barrel Pixel detector, the innermost part of the ATLAS detector to be installed on the new Large Hadron Collider at CERN (Geneva), is presented. Very high- dimensional stability, minimization of the material and ability of operating 10 years in a high radiation environment are the key design requirements. The proposed solution consists of a combination of different carbon-based materials (impregnated carbon-carbon, ultra high modulus carbon fibre composites) coupled to a thin aluminum tube to form a very light support with an integrated cooling channel. Our design has proven to successfully fulfil the requirements. The extensive prototyping and testing program to fully qualify the design and release the production are discussed.

  12. ATLAS IBL Stave QA - In and Around SR1

    CERN Document Server

    Carney, Rebecca

    2013-01-01

    During the Phase-I upgrade the ATLAS Inner tracker will have a whole new layer of pixels inserted between the existing B-layer and a new, smaller, beam pipe. Briefly, there are 14 assemblies of 32 single and double-chip hybrid silicon pixel chips arranged side-by-side on light-weight, thermally conductive carbon-fibre coated carbon foam supports called staves. When the staves arrive at CERN, fully assembled, they undergo a QA procedure, which checks the power characteristics of sensors and read-out chips, and assess the quality of individual pixels.

  13. Experiment list: SRX112178 [Chip-atlas[Archive

    Lifescience Database Archive (English)

    Full Text Available line=OS25 ES cells || chip antibody=8WG16 (MMS-126R, Covance) || chip antibody manufacturer=Covance || chromatin=Fixed || beads=Magn...etic beads http://dbarchive.biosciencedbc.jp/kyushu-u/mm

  14. Experiment list: SRX367330 [Chip-atlas[Archive

    Lifescience Database Archive (English)

    Full Text Available nology) || sirna transfection=siBrd4 http://dbarchive.bi...=HEK293T cell || cell line=Human Embryonic Kidney 293 cells || chip antibody=CDK9 || chip antibody details=2316S (Cell Signaling Tech

  15. Experiment list: SRX367328 [Chip-atlas[Archive

    Lifescience Database Archive (English)

    Full Text Available nology) || sirna transfection=siCTL http://dbarchive.bio...=HEK293T cell || cell line=Human Embryonic Kidney 293 cells || chip antibody=CDK9 || chip antibody details=2316S (Cell Signaling Tech

  16. Experiment list: SRX367329 [Chip-atlas[Archive

    Lifescience Database Archive (English)

    Full Text Available hnology) || sirna transfection=siJMJD6 http://dbarchive....e=HEK293T cell || cell line=Human Embryonic Kidney 293 cells || chip antibody=CDK9 || chip antibody details=2316S (Cell Signaling Tec

  17. Experiment list: SRX190311 [Chip-atlas[Archive

    Lifescience Database Archive (English)

    Full Text Available || treatment=None || treatment description=No special treatment or protocol applies || protocol=v042211.1 || protocol... description=Faster ChIP protocol & AMpure XP size selection for ChIP-s

  18. Experiment list: SRX543048 [Chip-atlas[Archive

    Lifescience Database Archive (English)

    Full Text Available nology http://dbarchive.biosciencedbc.jp/kyushu-u/mm9/ea...CID.adh murine thymic lymphoma || development stage=DN3 || chip antibody=rabbit anti-Miz-1 || chip antibody vendor=Santa Cruz Biotech

  19. Experiment list: SRX143814 [Chip-atlas[Archive

    Lifescience Database Archive (English)

    Full Text Available | lab description=Ren - Ludwig Institue for Cancer Research || datatype=ChipSeq |...M918722: LICR ChipSeq Lung CTCF adult-8wks source_name=Lung || biomaterial_provider=LICR lab || lab=LICR-m |

  20. Experiment list: SRX821820 [Chip-atlas[Archive

    Lifescience Database Archive (English)

    Full Text Available PPARG ChIP-seq || tissue=SQ White Adipose Tissue || chip antibody=anti-PPAR? antibody || chip antibody vendor=Santa Cruz Biotechnolog...ies http://dbarchive.biosciencedbc.jp/kyushu-u/hg19/each

  1. Experiment list: SRX821812 [Chip-atlas[Archive

    Lifescience Database Archive (English)

    Full Text Available =PPARG ChIP-seq || tissue=SQ White Adipose Tissue || chip antibody=anti-PPAR? antibody || chip antibody vendor=Santa Cruz Biotechnolo...gies http://dbarchive.biosciencedbc.jp/kyushu-u/hg19/eac

  2. Experiment list: SRX974676 [Chip-atlas[Archive

    Lifescience Database Archive (English)

    Full Text Available ure || genotype/variation=pcf11-9 mutant || growth temperature=grown at 25C || chip antibody=CMA601 antibody || chip antibody referen...ce=PMID 25252976 http://dbarchive.biosciencedbc.jp/kyush

  3. Experiment list: SRX974682 [Chip-atlas[Archive

    Lifescience Database Archive (English)

    Full Text Available ure || genotype/variation=pcf11-2 mutant || growth temperature=grown at 37C || chip antibody=CMA601 antibody || chip antibody referen...ce=PMID 25252976 http://dbarchive.biosciencedbc.jp/kyush

  4. Experiment list: SRX180159 [Chip-atlas[Archive

    Lifescience Database Archive (English)

    Full Text Available sd || cell type=hemogenic endothelium || chip antibody=CEBPb || chip antibody vendor=santa cruz biotechnol...ogy http://dbarchive.biosciencedbc.jp/kyushu-u/mm9/eachData/bw/SRX180159.bw http://

  5. Experiment list: SRX319551 [Chip-atlas[Archive

    Lifescience Database Archive (English)

    Full Text Available use embryonic stem cells || genotype/variation=expressing Flag-bio tagged Dmap1 || chip beads=Dynabeads MyOn...e Streptavidin T1 || chip beads vendor=Invitrogen http://dbarchive.biosciencedbc.

  6. Experiment list: SRX319556 [Chip-atlas[Archive

    Lifescience Database Archive (English)

    Full Text Available ype=mouse embryonic stem cells || genotype/variation=expressing Flag-bio tagged Dax1 || chip beads=Dynabeads... MyOne Streptavidin T1 || chip beads vendor=Invitrogen http://dbarchive.bioscienc

  7. Experiment list: SRX319553 [Chip-atlas[Archive

    Lifescience Database Archive (English)

    Full Text Available se embryonic stem cells || genotype/variation=expressing Flag-bio tagged Tip60 || chip beads=Dynabeads MyOne... Streptavidin T1 || chip beads vendor=Invitrogen http://dbarchive.biosciencedbc.j

  8. Experiment list: SRX319558 [Chip-atlas[Archive

    Lifescience Database Archive (English)

    Full Text Available | cell type=mouse embryonic stem cells || genotype/variation=expressing control BirA || chip beads=Dynabeads... MyOne Streptavidin T1 || chip beads vendor=Invitrogen http://dbarchive.bioscienc

  9. Experiment list: SRX319555 [Chip-atlas[Archive

    Lifescience Database Archive (English)

    Full Text Available ype=mouse embryonic stem cells || genotype/variation=expressing Flag-bio tagged Dax1 || chip beads=Dynabeads... MyOne Streptavidin T1 || chip beads vendor=Invitrogen http://dbarchive.bioscienc

  10. Experiment list: SRX319557 [Chip-atlas[Archive

    Lifescience Database Archive (English)

    Full Text Available se embryonic stem cells || genotype/variation=expressing Flag-bio tagged Nanog || chip beads=Dynabeads MyOne... Streptavidin T1 || chip beads vendor=Invitrogen http://dbarchive.biosciencedbc.j

  11. Experiment list: SRX821806 [Chip-atlas[Archive

    Lifescience Database Archive (English)

    Full Text Available PPARG ChIP-seq || tissue=SQ White Adipose Tissue || chip antibody=anti-PPAR? antibody || chip antibody vendor=Santa Cruz Biotechnolog...ies http://dbarchive.biosciencedbc.jp/kyushu-u/hg19/each

  12. Experiment list: SRX821809 [Chip-atlas[Archive

    Lifescience Database Archive (English)

    Full Text Available PPARG ChIP-seq || tissue=SQ White Adipose Tissue || chip antibody=anti-PPAR? antibody || chip antibody vendor=Santa Cruz Biotechnolog...ies http://dbarchive.biosciencedbc.jp/kyushu-u/hg19/each

  13. Experiment list: SRX821821 [Chip-atlas[Archive

    Lifescience Database Archive (English)

    Full Text Available PPARG ChIP-seq || tissue=SQ White Adipose Tissue || chip antibody=anti-PPAR? antibody || chip antibody vendor=Santa Cruz Biotechnolog...ies http://dbarchive.biosciencedbc.jp/kyushu-u/hg19/each

  14. Experiment list: SRX821818 [Chip-atlas[Archive

    Lifescience Database Archive (English)

    Full Text Available =PPARG ChIP-seq || tissue=SQ White Adipose Tissue || chip antibody=anti-PPAR? antibody || chip antibody vendor=Santa Cruz Biotechnolo...gies http://dbarchive.biosciencedbc.jp/kyushu-u/hg19/eac

  15. Experiment list: SRX821815 [Chip-atlas[Archive

    Lifescience Database Archive (English)

    Full Text Available PPARG ChIP-seq || tissue=SQ White Adipose Tissue || chip antibody=anti-PPAR? antibody || chip antibody vendor=Santa Cruz Biotechnolog...ies http://dbarchive.biosciencedbc.jp/kyushu-u/hg19/each

  16. Test-beam activities and results for the ATLAS ITk pixel detector

    Science.gov (United States)

    Bisanz, T.

    2017-12-01

    The Phase-II upgrade of the LHC aims at an increase of the instantaneous luminosity up to about 5×1034 cm‑2 s‑1. To cope with the resulting challenges the current Inner Detector will be replaced by an all-silicon Inner Tracker (ITk) system. The Pixel Detector will have to deal with occupancies of about 300 hits/FE/s as well as a fluence of around 2×1016 neq cm‑2. Various sensor layouts are under development, aiming at providing a high performance, cost effective pixel instrumentation to cover an active area of about 10 m2. These range from thin planar silicon, 3D silicon, to active CMOS sensors. After extensive characterization of the sensors in the lab, their charge collection properties and hit efficiency are measured in common testbeam campaigns, which provide valuable feedback for improvements of the layout. Testbeam measurements of the final prototypes will be used for the decision of which sensor types will be installed in ITk. The setups used in the ITk Pixel testbeam campaigns will be presented, including the common track reconstruction and analysis software. Results from the latest measurements will be shown, highlighting some of the developments and challenges for the ITk Pixel sensors.

  17. Experiment list: SRX485210 [Chip-atlas[Archive

    Lifescience Database Archive (English)

    Full Text Available 6551: Deadlock ChIP from deadlock germline knock-down ovaries; Drosophila melanogaster; ChIP-Seq source_name=Deadlock ChIP from deadl...male || tissue=ovary || germline knock-down=deadlock || chip antibody=custom-made...ock germline knock-down ovaries || developmental stage=4-6 days old adult || Sex=fe

  18. Experiment list: SRX485205 [Chip-atlas[Archive

    Lifescience Database Archive (English)

    Full Text Available 46546: Rhino ChIP from deadlock germline knock-down ovaries; Drosophila melanogaster; ChIP-Seq source_name=Rhino ChIP from deadlock...|| tissue=ovary || germline knock-down=deadlock || chip antibody=custom-made rabb...SRX485205 dm3 Unclassified Unclassified Adult Ovary NA 12368792,36.1,45.5,301 GSM13

  19. Experiment list: SRX110782 [Chip-atlas[Archive

    Lifescience Database Archive (English)

    Full Text Available e3 (ab6002, abcam), Pol II (CTD4H8, Millipore) || chip antibody 1 manufacturer=ab...cam || chip antibody 2=Pol II (CTD4H8, Millipore) || chip antibody 2 manufacturer=Millipore http://dbarchive

  20. Experiment list: SRX1322297 [Chip-atlas[Archive

    Lifescience Database Archive (English)

    Full Text Available is=Malignant Lymphoma - Burkitts Type 14267495,88.8,25.4,916 GSM1905007: EBNA1 CHIP-seq in Raji; Homo sapien...s; ChIP-Seq source_name=EBNA1 CHIP-seq in Raji || cell line=Raji || cell type=EBV positive B-cell || chip an

  1. Experiment list: SRX1322301 [Chip-atlas[Archive

    Lifescience Database Archive (English)

    Full Text Available Diagnosis=Malignant Lymphoma - Burkitts Type 11963119,82.9,34.4,607 GSM1905011: IgG CHIP-seq in Raji; Homo s...apiens; ChIP-Seq source_name=IgG CHIP-seq in Raji || cell line=Raji || cell type=EBV positive B-cell || chip

  2. Qualification measurements of the voltage supply system as well as conceptionation of a state machine for the detector control of the ATLAS pixel detector; Qualifizierungsmessungen des Spannungsversorgungssystems sowie Konzeptionierung einer Zustandsmaschine fuer die Detektorkontrolle des ATLAS-Pixeldetektors

    Energy Technology Data Exchange (ETDEWEB)

    Schultes, Joachim

    2007-02-15

    The supply system and the control system of the ATLAS pixel detector represent important building blocks of the pixel detector. Corresponding studies of the supply system, which were performed within a comprehensive test system, the so-called system test, with nearly all final components and the effects on the pixel detector are object of this thesis. A further point of this thesis is the coordination and further development of the detector-control-system software under regardment of the different partial systems. A main topic represents thereby the conceptionation of the required state machine as interface for the users and the connection to the data acquisition system.

  3. An Introduction to ATLAS Pixel Detector DAQ and Calibration Software Based on a Year's Work at CERN for the Upgrade from 8 to 13 TeV

    CERN Document Server

    AUTHOR|(CDS)2094561

    An overview is presented of the ATLAS pixel detector Data Acquisition (DAQ) system obtained by the author during a year-long opportunity to work on calibration software for the 2015-16 Layer‑2 upgrade. It is hoped the document will function more generally as an easy entry point for future work on ATLAS pixel detector calibration systems. To begin with, the overall place of ATLAS pixel DAQ within the CERN Large Hadron Collider (LHC), the purpose of the Layer-2 upgrade and the fundamentals of pixel calibration are outlined. This is followed by a brief look at the high level structure and key features of the calibration software. The paper concludes by discussing some difficulties encountered in the upgrade project and how these led to unforeseen alternative enhancements, such as development of calibration “simulation” software allowing the soundness of the ongoing upgrade work to be verified while not all of the actual readout hardware was available for the most comprehensive testing.

  4. Fluorocarbon evaporative cooling developments for the ATLAS pixel and semiconductor tracking detectors

    CERN Document Server

    Anderssen, E; Berry, S; Bonneau, P; Bosteels, Michel; Bouvier, P; Cragg, D; English, R; Godlewski, J; Górski, B; Grohmann, S; Hallewell, G D; Hayler, T; Ilie, S; Jones, T; Kadlec, J; Lindsay, S; Miller, W; Niinikoski, T O; Olcese, M; Olszowska, J; Payne, B; Pilling, A; Perrin, E; Sandaker, H; Seytre, J F; Thadome, J; Vacek, V

    1999-01-01

    Heat transfer coefficients 2-5.103 Wm-2K-1 have been measured in a 3.6 mm I.D. heated tube dissipating 100 Watts - close to the full equivalent power (~110 W) of a barrel SCT detector "stave" - over a range of power dissipations and mass flows in the above fluids. Aspects of full-scale evaporative cooling circulator design for the ATLAS experiment are discussed, together with plans for future development.

  5. The ATLAS Pixel detector and its use in a Search for Metastable Heavy Charged Particles

    CERN Document Server

    AUTHOR|(INSPIRE)INSPIRE-00399154

    The discovery of the Higgs boson, the missing piece in the Standard Model puzzle, at the electroweak scale in 2012 by the ATLAS and CMS experiments, closed an important season of particle physics and a search lasted 50 years. Even though the discovery of the Higgs boson is a great achievement, the Standard Model is incomplete, since it does not include the gravitational field and can not explain some experimental measurements such as the dark matter observed in galaxy studies and the matter and anti-matter asymmetry observed in the universe. The experiments at LHC have the exciting goal to give answers to the SM open questions and make available the hint or the evidence that may allow to proceed beyond it. An introduction on the Standard Model and the LHC is provided in Chapter 1 where the ATLAS detector is also described. ATLAS is the largest of the detectors placed along the LHC ring and is able to detect products from pp and heavy ion collisions. The detector has a cylindrical geometry around the interac...

  6. Fabrication of a high-density MCM-D for a pixel detector system using a BCB/Cu technology

    CERN Document Server

    Topper, M; Engelmann, G; Fehlberg, S; Gerlach, P; Wolf, J; Ehrmann, O; Becks, K H; Reichl, H

    1999-01-01

    The MCM-D which is described here is a prototype for a pixel detector system for the planned Large Hadron Collider (LHC) at CERN, Geneva. The project is within the ATLAS experiment. The module consists of a sensor tile with an active area of 16.4 mm*60.4 mm, 16 readout chips, each serving 24*160 pixel unit cells, a module controller chip, an optical transceiver and the local signal interconnection and power distribution buses. The extremely high wiring density which is necessary to interconnect the readout chips was achieved using a thin film copper/photo-BCB process above the pixel array. The bumping of the readout chips was done by PbSn electroplating. All dice are then attached by flip-chip assembly to the sensor diodes and the local buses. The focus of this paper is a detailed description of the technologies for the fabrication of this advanced MCM-D. (10 refs).

  7. Study of Charge Diffusion in a Silicon Detector Using an Energy Sensitive Pixel Readout Chip

    CERN Document Server

    Schioppa, E. J.; van Beuzekom, M.; Visser, J.; Koffeman, E.; Heijne, E.; Engel, K. J.; Uher, J.

    2015-01-01

    A 300 μm thick thin p-on-n silicon sensor was connected to an energy sensitive pixel readout ASIC and exposed to a beam of highly energetic charged particles. By exploiting the spectral information and the fine segmentation of the detector, we were able to measure the evolution of the transverse profile of the charge carriers cloud in the sensor as a function of the drift distance from the point of generation. The result does not rely on model assumptions or electric field calculations. The data are also used to validate numerical simulations and to predict the detector spectral response to an X-ray fluorescence spectrum for applications in X-ray imaging.

  8. CMOS Pixel Development for the ATLAS Experiment at HL-LHC

    CERN Document Server

    Ristic, Branislav; The ATLAS collaboration

    2017-01-01

    To cope with the rate and radiation environment expected at the HL-LHC new approaches are being developed on CMOS pixel detectors, providing charge collection in a depleted layer. They are based on technologies that allow to use high depletion voltages (HV-MAPS) and high resistivity wafers (HR-MAPS) for large depletion depths; radiation hard processed with multiple nested wells to allow CMOS electronics to be embedded safely into the sensor substrate. We are investigating depleted CMOS pixels with monolithic or hybrid designs concerning their suitability for high rate, fast timing and high radiation operation at LHC. This paper will discuss recent results on the main candidate technologies and the current development towards a monolithic solution.

  9. Test-beam activities and results for the ATLAS ITk pixel detector

    CERN Document Server

    Bisanz, Tobias; The ATLAS collaboration

    2017-01-01

    The Phase-II upgrade of the LHC will result in an increase of the instantaneous luminosity up to about 5×1034 cm−2s−1. To cope with the challenges the current Inner Detector will be replaced by an all-silicon Inner Tracker (ITk) system. The Pixel Detector will have to deal with occupancies of about 300~hits/FE/s as well as a fluence of 2×1016neqcm−2. Various sensor layouts are under development, aiming at providing a high performance, cost effective pixel instrumentation to cover an active area of about 10~m2. These range from thin planar silicon, over 3D silicon, to active CMOS sensors. After extensive characterization of the sensors in the lab, their charge collection properties and hit efficiency are measured in common testbeam campaigns, which provide valuable feedback for improvements of the layout. Testbeam measurements of the final prototypes will be used for the decision of which sensor types will be installed in ITk. The setups used in the ITk Pixel testbeam campaigns will be presented, inclu...

  10. Zero suppression logic of the ALICE muon forward tracker pixel chip prototype PIXAM and associated readout electronics development

    Science.gov (United States)

    Flouzat, C.; Değerli, Y.; Guilloux, F.; Orsini, F.; Venault, P.

    2015-05-01

    In the framework of the ALICE experiment upgrade at HL-LHC, a new forward tracking detector, the Muon Forward Tracker (MFT), is foreseen to overcome the intrinsic limitations of the present Muon Spectrometer and will perform new measurements of general interest for the whole ALICE physics. To fulfill the new detector requirements, CMOS Monolithic Active Pixel Sensors (MAPS) provide an attractive trade-off between readout speed, spatial resolution, radiation hardness, granularity, power consumption and material budget. This technology has been chosen to equip the Muon Forward Tracker and also the vertex detector: the Inner Tracking System (ITS). Since few years, an intensive R&D program has been performed on the design of MAPS in the 0.18 μ m CMOS Image Sensor (CIS) process. In order to avoid pile up effects in the experiment, the classical rolling shutter readout system of MAPS has been improved to overcome the readout speed limitation. A zero suppression algorithm, based on a 3 by 3 cluster finding (position and data), has been chosen for the MFT. This algorithm allows adequate data compression for the sensor. This paper presents the large size prototype PIXAM, which represents 1/3 of the final chip, and will focus specially on the zero suppression block architecture. This chip is designed and under fabrication in the 0.18 μ m CIS process. Finally, the readout electronics principle to send out the compressed data flow is also presented taking into account the cluster occupancy per MFT plane for a single central Pb-Pb collision.

  11. Design and performance of the ABCD chip for the binary readout of silicon strip detectors in the ATLAS semiconductor tracker

    CERN Document Server

    Dabrowski, W; Buttar, C M; Cindro, V; Clarks, A G; Dawson, I; Dorfan, D; Dubbs, T; Falconer, N; French, M; Greenall, A; Grillo, A A; Happer, R; Jarron, Pierre; Kaplon, J; Kudlaty, J; Kramberger, G; Lacasta, C; La Marra, D; Macina, Daniela; Mandic, I; Mikuz, M; Meddeler, G; Milgrome, O; Niggli, H; Phillips, P W; Roe, S; Smith, A; Spieler, H; Spencer, E; Szczygiel, R; Weilhammer, Peter; Wolter, M; Zsenei, A

    2000-01-01

    The ABCD design is a single chip implementation of the binary readout architecture for silicon strip detectors in the ATLAS semiconductor tracker. The prototype chip has been manufactured successfully in the DMILL process. In the paper we present the design of the chip and the measurement results. The basic analogue performance of the ABCD design has been evaluated using a prototype SCT module equipped with the ABCD chips. The digital performance has been evaluated using a general purpose IC tester. The measurements confirmed that all blocks of the ABCD design are fully functional and the chips meet all basic requirements of the SCT. (7 refs).

  12. A full on-chip, low noise, low power consumption reference generator in monolithic active pixel sensors

    Science.gov (United States)

    Wang, Jia; Gao, Deyuan; Valin, Isabelle; Dorokhov, Andrei; Hu, Yann

    2011-12-01

    The monolithic active pixel sensor (MAPS) is a promising choice to track charged particles in high energy physics experiments, such as the solenoidal tracker at RHIC (STAR). In order to achieve a clean reference voltage and simplify the cable placement, a full on-chip reference generator is presented in this paper. By utilizing a buffer and a series RC network, the proposed circuit can achieve good stability, low power and low noise, without any external components. The output voltage is adjustable to compensate the influence of the fabrication process. The generator has been implemented and fabricated in a standard 0.35 μm CMOS process. Its silicon area is 327 μm×119 μm. The total power dissipation is 677 μW at a supply voltage of 3.3 V. The measured results show that only 5.84% of the total noise in MAPS is induced by the proposed reference generator. The comparison with the other optional circuit based on a current buffer is also presented.

  13. Design, fabrication and characterization of a 64 pixel metallic magnetic calorimeter array with integrated, on-chip microwave SQUID multiplexer

    Science.gov (United States)

    Kempf, S.; Wegner, M.; Deeg, L.; Fleischmann, A.; Gastaldo, L.; Herrmann, F.; Richter, D.; Enss, C.

    2017-06-01

    We report on the design, fabrication and characterization of a 64 pixel metallic magnetic calorimeter array that is read out by an integrated, on-chip microwave SQUID multiplexer. Based on the results of our comprehensive device characterization we refined the state-of-the-art multiplexer model which assumes each associated non-hysteretic rf-SQUID to purely behave as a flux-dependent inductor. In particular, we include the capacitance and the subgap resistance of the Josephson junction as well as screening effects and parasitic mutual couplings between different coils that show up only when a superconducting flux transformer is attached to the SQUID input. Thanks to these modifications, we are able to explain the occurrence of a magnetic flux dependence of the internal quality factor of the microwave resonators as well as to accurately calculate the characteristic multiplexer parameters. When combining the refined multiplexer model with the thermodynamical description of a metallic magnetic calorimeter, we find a reasonable agreement between our measurements and predictions.

  14. Test-beam activities and results for the ATLAS ITk pixel detector

    CERN Document Server

    Bisanz, Tobias; The ATLAS collaboration

    2017-01-01

    The Phase-II upgrade of the LHC will result in an increase of the instantaneous luminosity up to about $5\\times10^{34}~\\text{cm}^{-2}\\text{s}^{-1}$. To cope with the resulting challenges the current Inner Detector will be replaced by an all-silicon Inner Tracker (ITk) system. The Pixel Detector will have to deal with occupancies of about 300~hits/FE/s as well as a fluence of $2\\times10^{16}~\\text{n}_\\text{eq}\\text{cm}^{-2}$. Various sensor layouts are under development, aiming at providing a high performance, cost effective pixel instrumentation to cover an active area of about $10~\\text{m}^2$. These range from thin planar silicon, over 3D silicon, to active CMOS sensors.\\par After extensive characterization of the sensors in the lab, their charge collection properties and hit efficiency are measured in common testbeam campaigns, which provide valuable feedback for improvements of the layout. Testbeam measurements of the final prototypes will be used for the decision of which sensor types will be installed in...

  15. A high resolution, high frame rate detector based on a microchannel plate read out with the Medipix2 counting CMOS pixel chip.

    CERN Document Server

    Mikulec, Bettina; McPhate, J B; Tremsin, A S; Siegmund, O H W; Clark, Allan G; CERN. Geneva

    2005-01-01

    The future of ground-based optical astronomy lies with advancements in adaptive optics (AO) to overcome the limitations that the atmosphere places on high resolution imaging. A key technology for AO systems on future very large telescopes are the wavefront sensors (WFS) which detect the optical phase error and send corrections to deformable mirrors. Telescopes with >30 m diameters will require WFS detectors that have large pixel formats (512x512), low noise (<3 e-/pixel) and very high frame rates (~1 kHz). These requirements have led to the idea of a bare CMOS active pixel device (the Medipix2 chip) functioning in counting mode as an anode with noiseless readout for a microchannel plate (MCP) detector and at 1 kHz continuous frame rate. First measurement results obtained with this novel detector are presented both for UV photons and beta particles.

  16. Experiment list: SRX022861 [Chip-atlas[Archive

    Lifescience Database Archive (English)

    Full Text Available ue Diagnosis=NOS 8318912,26.1,58.4,335 GSM559804: Sin3B MT 5 source_name=C2C12 myotubes || origin=C2C12 cell line || genetic backgrou...nd=C3H || cell type=myotube || chip antibody=Sin3B || chip antibody manufacturer=Sa

  17. Experiment list: SRX022854 [Chip-atlas[Archive

    Lifescience Database Archive (English)

    Full Text Available ue Diagnosis=NOS 9430628,50.8,52.4,296 GSM559797: Sin3A MT 2 source_name=C2C12 myotubes || origin=C2C12 cell line || genetic backgrou...nd=C3H || cell type=myotube || chip antibody=Sin3A || chip antibody manufacturer=Sa

  18. Experiment list: SRX262779 [Chip-atlas[Archive

    Lifescience Database Archive (English)

    Full Text Available y vendor=Santa Cruz Biotechnology http://dbarchive.biosciencedbc.jp/kyushu-u/mm9/...e_name=NIH3T3_SRF_03 || cell line=NIH3T3 fibroblasts || genotype=normal || chip antibody=SRF || chip antibod

  19. Experiment list: SRX262798 [Chip-atlas[Archive

    Lifescience Database Archive (English)

    Full Text Available 3T3_SAP1_15 || cell line=NIH3T3 fibroblasts || genotype=normal || chip antibody=SAP-1a || chip antibody vendor=Santa Cruz Biotechnolo...gy http://dbarchive.biosciencedbc.jp/kyushu-u/mm9/eachDa

  20. Experiment list: SRX262799 [Chip-atlas[Archive

    Lifescience Database Archive (English)

    Full Text Available H3T3_SAP1_LAT || cell line=NIH3T3 fibroblasts || genotype=normal || chip antibody=SAP-1a || chip antibody vendor=Santa Cruz Biotechno...logy http://dbarchive.biosciencedbc.jp/kyushu-u/mm9/each

  1. Experiment list: SRX262782 [Chip-atlas[Archive

    Lifescience Database Archive (English)

    Full Text Available dy vendor=Santa Cruz Biotechnology http://dbarchive.biosciencedbc.jp/kyushu-u/mm9...ce_name=NIH3T3_SRF_15 || cell line=NIH3T3 fibroblasts || genotype=normal || chip antibody=SRF || chip antibo

  2. Experiment list: SRX262786 [Chip-atlas[Archive

    Lifescience Database Archive (English)

    Full Text Available H3T3_MRTFA_15 || cell line=NIH3T3 fibroblasts || genotype=normal || chip antibody=MRTF-A || chip antibody vendor=Santa Cruz Biotechno...logy http://dbarchive.biosciencedbc.jp/kyushu-u/mm9/each

  3. Experiment list: SRX262788 [Chip-atlas[Archive

    Lifescience Database Archive (English)

    Full Text Available IH3T3_MRTFA_UO || cell line=NIH3T3 fibroblasts || genotype=normal || chip antibody=MRTF-A || chip antibody vendor=Santa Cruz Biotechn...ology http://dbarchive.biosciencedbc.jp/kyushu-u/mm9/eac

  4. Experiment list: SRX262780 [Chip-atlas[Archive

    Lifescience Database Archive (English)

    Full Text Available y vendor=Santa Cruz Biotechnology http://dbarchive.biosciencedbc.jp/kyushu-u/mm9/...e_name=NIH3T3_SRF_03 || cell line=NIH3T3 fibroblasts || genotype=normal || chip antibody=SRF || chip antibod

  5. Experiment list: SRX288146 [Chip-atlas[Archive

    Lifescience Database Archive (English)

    Full Text Available cells skewed towards a Th17 subset. || strain=C57BL/6 || genotype=miR-155KO || chip antibody=c-Maf (Santa Cr...uz, M-153) || chip antibody manufacturer=Santa Cruz http://dbarchive.biosciencedb

  6. Experiment list: SRX100266 [Chip-atlas[Archive

    Lifescience Database Archive (English)

    Full Text Available ERa EtOH source_name=H3396 cells || cell line=H3396 cells || treatment=ethanol || comment=Santa Cruz: ERa (...HC20) || chip antibody=ERa || chip antibody manufacturer=Santa Cruz http://dbarchive.biosciencedbc.jp/kyushu

  7. Experiment list: SRX100258 [Chip-atlas[Archive

    Lifescience Database Archive (English)

    Full Text Available : CBP E2 source_name=H3396 cells || cell line=H3396 cells || treatment=estrogen || comment=Santa Cruz: CBP (...A22) || chip antibody=CBP || chip antibody manufacturer=Santa Cruz http://dbarchive.biosciencedbc.jp/kyushu-

  8. Experiment list: SRX212437 [Chip-atlas[Archive

    Lifescience Database Archive (English)

    Full Text Available 4+CD25+CD45RA+ expanded naive regulatory T cells || chip antibody=ETS1 (Santa Cru...z sc-350x) || chip antibody manufacturer=Santa Cruz http://dbarchive.biosciencedbc.jp/kyushu-u/hg19/eachData

  9. Experiment list: SRX100259 [Chip-atlas[Archive

    Lifescience Database Archive (English)

    Full Text Available 050: CBP EtOH source_name=H3396 cells || cell line=H3396 cells || treatment=ethanol || comment=Santa Cruz: C...BP (A22) || chip antibody=CBP || chip antibody manufacturer=Santa Cruz http://dbarchive.biosciencedbc.jp/kyu

  10. Experiment list: SRX200042 [Chip-atlas[Archive

    Lifescience Database Archive (English)

    Full Text Available 1023616: H3K27me3 ChIP, HGPS, p14; Homo sapiens; ChIP-Seq source_name=patient forearm skin biopsy, H3K27me3 ...ChIP || disease status=Hutchinson-Gilford progeria syndrome || tissue=forearm skin biopsy || cell type=fibro

  11. Experiment list: SRX200050 [Chip-atlas[Archive

    Lifescience Database Archive (English)

    Full Text Available GSM1023624: LaminA ChIP, HGPS, p16, rep1; Homo sapiens; ChIP-Seq source_name=patient forearm skin biopsy, l...amin ChIP || disease status=Hutchinson-Gilford progeria syndrome || tissue=forearm skin biopsy || cell type=

  12. Experiment list: SRX200040 [Chip-atlas[Archive

    Lifescience Database Archive (English)

    Full Text Available 14: H3K27me3 ChIP, Age Control, p17; Homo sapiens; ChIP-Seq source_name=normal skin biopsy, H3K27me3 ChIP ||... disease status=normal || tissue=skin biopsy || cell type=fibroblasts || gender=female || cell line=AG08470

  13. Experiment list: SRX200048 [Chip-atlas[Archive

    Lifescience Database Archive (English)

    Full Text Available 7 GSM1023622: LaminA ChIP, Father, p16, rep2; Homo sapiens; ChIP-Seq source_name=normal forearm skin biopsy,... lamin ChIP || disease status=normal || tissue=forearm skin biopsy || cell type=fibroblasts || gender=male |

  14. Experiment list: SRX200038 [Chip-atlas[Archive

    Lifescience Database Archive (English)

    Full Text Available M1023612: H3K27me3 ChIP, Father, p19; Homo sapiens; ChIP-Seq source_name=normal forearm skin biopsy, H3K27me...3 ChIP || disease status=normal || tissue=forearm skin biopsy || cell type=fibroblasts || gender=male || cel

  15. Experiment list: SRX200036 [Chip-atlas[Archive

    Lifescience Database Archive (English)

    Full Text Available 1023610: H3K27me3 ChIP, Father, p14; Homo sapiens; ChIP-Seq source_name=normal forearm skin biopsy, H3K27me3... ChIP || disease status=normal || tissue=forearm skin biopsy || cell type=fibroblasts || gender=male || cell

  16. Experiment list: SRX200046 [Chip-atlas[Archive

    Lifescience Database Archive (English)

    Full Text Available GSM1023620: LaminA ChIP, Father, p16, rep1; Homo sapiens; ChIP-Seq source_name=normal forearm skin biopsy, ...lamin ChIP || disease status=normal || tissue=forearm skin biopsy || cell type=fibroblasts || gender=male ||

  17. Experiment list: SRX200052 [Chip-atlas[Archive

    Lifescience Database Archive (English)

    Full Text Available 4 GSM1023626: LaminA ChIP, HGPS, p16, rep2; Homo sapiens; ChIP-Seq source_name=patient forearm skin biopsy, ...lamin ChIP || disease status=Hutchinson-Gilford progeria syndrome || tissue=forearm skin biopsy || cell type

  18. Experiment list: SRX200044 [Chip-atlas[Archive

    Lifescience Database Archive (English)

    Full Text Available M1023618: H3K27me3 ChIP, HGPS, p17; Homo sapiens; ChIP-Seq source_name=patient forearm skin biopsy, H3K27me3... ChIP || disease status=Hutchinson-Gilford progeria syndrome || tissue=forearm skin biopsy || cell type=fibr

  19. Experiment list: SRX1041182 [Chip-atlas[Archive

    Lifescience Database Archive (English)

    Full Text Available 46: anti-ATF4 (sc-200); Homo sapiens; ChIP-Seq source_name=HAP1, 2 mM histidinol for 24 hours, ATF4 ChIP || ...cell line=HAP1 || treatment=2 mM histidinol, 24 hours || chip antibody=ATF4 (Santa Cruz Biotechnology sc-200

  20. Experiment list: SRX1041184 [Chip-atlas[Archive

    Lifescience Database Archive (English)

    Full Text Available 48: anti-ATF4 (ABE387); Homo sapiens; ChIP-Seq source_name=HAP1, 2 mM histidinol for 24 hours, ATF4 ChIP || ...cell line=HAP1 || treatment=2 mM histidinol, 24 hours || chip antibody=ATF4 (Millipore, ABE387) http://dbarc

  1. Experiment list: SRX1041183 [Chip-atlas[Archive

    Lifescience Database Archive (English)

    Full Text Available 7: anti-ATF4 (D4B8); Homo sapiens; ChIP-Seq source_name=HAP1, 2 mM histidinol for 24 hours, ATF4 ChIP || cel...l line=HAP1 || treatment=2 mM histidinol, 24 hours || chip antibody=ATF4 (Cell Signaling Technology, D4B8, C

  2. Experiment list: SRX047648 [Chip-atlas[Archive

    Lifescience Database Archive (English)

    Full Text Available pe=Fibroblast 15537299,94.1,28.9,714 GSM686978: RXR CHIP-seq 4 hours source_name=Preadipocyte cell line || c...ell line=3T3-L1 preadipocyte cell line || differentiation stage=Early stage || time=4 hours || chip antibody

  3. Experiment list: SRX245510 [Chip-atlas[Archive

    Lifescience Database Archive (English)

    Full Text Available SM1088171: Plasmablast CTCF; Mus musculus; ChIP-Seq source_name=splenic Plasmablasts || chip antibody=CTCF |...| chip antibody manufacturer=Millipore || cell type=splenic Plasmablasts || strain=C57BL/6 || cell surface m

  4. Experiment list: SRX860883 [Chip-atlas[Archive

    Lifescience Database Archive (English)

    Full Text Available 98020: Fetal brain H3K27me3 rep1; Homo sapiens; ChIP-Seq source_name=Fetal_brain_H3K27me3 || developmental stage=12 weeks after gesta...tion || tissue=fetal brain || chip antibody=H3K27me3 || chip antibody vendor=CST ht

  5. Experiment list: SRX860903 [Chip-atlas[Archive

    Lifescience Database Archive (English)

    Full Text Available 040: Fetal liver H3K27me3 rep1; Homo sapiens; ChIP-Seq source_name=Fetal_liver_H3K27me3 || developmental stage=12 weeks after gestati...on || tissue=fetal liver || chip antibody=H3K27me3 || chip antibody vendor=CST http

  6. Experiment list: SRX149659 [Chip-atlas[Archive

    Lifescience Database Archive (English)

    Full Text Available rectal cancer cells, normoxia, CDK8 ChIP || cell line=HCT116 || treatment=normoxia ...sue Diagnosis=Carcinoma 68335557,96.8,15.7,19987 GSM937561: CDK8-ChIP enriched DNA, normoxia; Homo sapiens; ChIP-Seq source_name=colo

  7. Experiment list: SRX271405 [Chip-atlas[Archive

    Lifescience Database Archive (English)

    Full Text Available l Stage=late embryonic stage 80920758,92.3,44.8,0 GSM1128469: Yki S2 ChIP input; Drosophila melanogaster; Ch...chip antibody=no antibody (input control) http://dbarchive.biosciencedbc.jp/kyush

  8. Experiment list: SRX507381 [Chip-atlas[Archive

    Lifescience Database Archive (English)

    Full Text Available + (wildtype) || age of animals=1-5 day old || tissue=Ovaries || chip antibody=Anti-H3K9me3 || chip antibody ...Anti-H3K9me3 - replicate#1; Drosophila melanogaster; ChIP-Seq source_name=WT_WT_Anti-H3K9me3 || strain=piwi/

  9. Experiment list: SRX150540 [Chip-atlas[Archive

    Lifescience Database Archive (English)

    Full Text Available sue Diagnosis=Malignant Lymphoma - Burkitts Type 50523816,44.6,18.1,25603 GSM935461: USC ChipSeq Raji Pol2 UCDavis source_name=Raji...outhern California || datatype=ChipSeq || datatype description=Chromatin IP Sequencing || cell=Raji... || cell organism=human || cell description=B lymphocyte, The Raji line of lymphoblast-lik

  10. Experiment list: SRX150539 [Chip-atlas[Archive

    Lifescience Database Archive (English)

    Full Text Available iagnosis=Malignant Lymphoma - Burkitts Type 29672613,65.0,3.5,743 GSM935460: USC ChipSeq Raji Input UCDavis source_name=Raji... California || datatype=ChipSeq || datatype description=Chromatin IP Sequencing || cell=Raji... || cell organism=human || cell description=B lymphocyte, The Raji line of lymphoblast-like cells

  11. Experiment list: SRX262791 [Chip-atlas[Archive

    Lifescience Database Archive (English)

    Full Text Available IH3T3_MRTFB_LAT || cell line=NIH3T3 fibroblasts || genotype=normal || chip antibody=MRTF-B || chip antibody vendor=Santa Cruz Biotech...nology http://dbarchive.biosciencedbc.jp/kyushu-u/mm9/ea

  12. Experiment list: SRX262797 [Chip-atlas[Archive

    Lifescience Database Archive (English)

    Full Text Available 3T3_SAP1_03 || cell line=NIH3T3 fibroblasts || genotype=normal || chip antibody=SAP-1a || chip antibody vendor=Santa Cruz Biotechnolo...gy http://dbarchive.biosciencedbc.jp/kyushu-u/mm9/eachDa

  13. Experiment list: SRX262792 [Chip-atlas[Archive

    Lifescience Database Archive (English)

    Full Text Available H3T3_MRTFB_UO || cell line=NIH3T3 fibroblasts || genotype=normal || chip antibody=MRTF-B || chip antibody vendor=Santa Cruz Biotechno...logy http://dbarchive.biosciencedbc.jp/kyushu-u/mm9/each

  14. Experiment list: SRX262800 [Chip-atlas[Archive

    Lifescience Database Archive (English)

    Full Text Available 3T3_SAP1_UO || cell line=NIH3T3 fibroblasts || genotype=normal || chip antibody=SAP-1a || chip antibody vendor=Santa Cruz Biotechnolo...gy http://dbarchive.biosciencedbc.jp/kyushu-u/mm9/eachDa

  15. Experiment list: SRX262789 [Chip-atlas[Archive

    Lifescience Database Archive (English)

    Full Text Available H3T3_MRTFB_03 || cell line=NIH3T3 fibroblasts || genotype=normal || chip antibody=MRTF-B || chip antibody vendor=Santa Cruz Biotechno...logy http://dbarchive.biosciencedbc.jp/kyushu-u/mm9/each

  16. Experiment list: SRX144524 [Chip-atlas[Archive

    Lifescience Database Archive (English)

    Full Text Available neage=mesoderm|Description=parental cell type to lymphoblastoid cell lines 4766716,6.2,89.4,0 GSM922969: NRF2 ChIP vehicle... treated pilot; Homo sapiens; ChIP-Seq source_name=NRF2 ChIP vehicle treated || biomaterial_pr

  17. Experiment list: SRX176057 [Chip-atlas[Archive

    Lifescience Database Archive (English)

    Full Text Available nosis=Carcinoma 21582823,90.1,7.3,1074 GSM984389: 22RV1 AR vehicle; Homo sapiens; ChIP-Seq source_name=prost...ate cancer cells || cell line=22RV1 || chip antibody=AR || chip antibody manufacturer=Abcam || treatment=EtOH vehicle

  18. Experiment list: SRX176054 [Chip-atlas[Archive

    Lifescience Database Archive (English)

    Full Text Available nosis=Carcinoma 13338805,91.2,4.9,792 GSM984386: LNCAP AR vehicle; Homo sapiens; ChIP-Seq source_name=prosta...te cancer cells || cell line=LNCaP || chip antibody=AR || chip antibody manufacturer=Abcam || treatment=EtOH vehicle

  19. Experiment list: SRX176063 [Chip-atlas[Archive

    Lifescience Database Archive (English)

    Full Text Available =Carcinoma 11279321,95.5,3.6,13985 GSM984395: LNCAP ACH3 vehicle; Homo sapiens; ChIP-Seq source_name=prostat...e cancer cells || cell line=LNCaP || chip antibody=AcH3 || chip antibody manufacturer=Millipore || treatment=EtOH vehicle

  20. Experiment list: SRX176067 [Chip-atlas[Archive

    Lifescience Database Archive (English)

    Full Text Available sis=Carcinoma 6619400,91.7,7.2,13648 GSM984399: LNCAP H3K4ME3 vehicle; Homo sapiens; ChIP-Seq source_name=pr...ostate cancer cells || cell line=LNCaP || chip antibody=H3K4Me3 || chip antibody manufacturer=Millipore || treatment=EtOH vehicle

  1. Experiment list: SRX1338947 [Chip-atlas[Archive

    Lifescience Database Archive (English)

    Full Text Available ription=Progenitor cells from which all blood cells derive. 38987751,98.2,6.0,267 GSM1909031: Resistant line ChIP input...tion=Resistant || strain=C57BL/6 || chip antibody=none (input) http://dbarchive.b

  2. Experiment list: SRX671992 [Chip-atlas[Archive

    Lifescience Database Archive (English)

    Full Text Available ; Mus musculus; ChIP-Seq source_name=embryonic stem cells, TC11, empty vector, input || strain/background=12...9/Ola || transchromosomic=hsa11 || plasmid=empty vector || chip_or_input=input DNA || chip antibody=none ||

  3. Experiment list: SRX365696 [Chip-atlas[Archive

    Lifescience Database Archive (English)

    Full Text Available e_name=Kc167_CP190_ChIP-seq || cell line=Kc167 || chip antibody=CP190 rabbit || chip antibody reference=PMID:21852534 || input... used=input-b http://dbarchive.biosciencedbc.jp/kyushu-u/dm3/ea

  4. Experiment list: SRX507384 [Chip-atlas[Archive

    Lifescience Database Archive (English)

    Full Text Available + (wildtype) || age of animals=1-5 day old || tissue=Ovaries || chip antibody=Anti-H3K4me2 || chip antibody ... Anti-H3K4me2- replicate#2; Drosophila melanogaster; ChIP-Seq source_name=WT_WT_Anti-H3K4me2 || strain=piwi/

  5. Experiment list: SRX821816 [Chip-atlas[Archive

    Lifescience Database Archive (English)

    Full Text Available e=PPARG ChIP-seq || tissue=SQ White Adipose Tissue || chip antibody=anti-PPAR? antibody || chip antibody vendor=Santa Cruz Biotechnol...ogies http://dbarchive.biosciencedbc.jp/kyushu-u/hg19/ea

  6. Experiment list: SRX821814 [Chip-atlas[Archive

    Lifescience Database Archive (English)

    Full Text Available pe=PPARG ChIP-seq || tissue=SQ White Adipose Tissue || chip antibody=anti-PPAR? antibody || chip antibody vendor=Santa Cruz Biotechno...logies http://dbarchive.biosciencedbc.jp/kyushu-u/hg19/e

  7. Experiment list: SRX821810 [Chip-atlas[Archive

    Lifescience Database Archive (English)

    Full Text Available e=PPARG ChIP-seq || tissue=SQ White Adipose Tissue || chip antibody=anti-PPAR? antibody || chip antibody vendor=Santa Cruz Biotechnol...ogies http://dbarchive.biosciencedbc.jp/kyushu-u/hg19/ea

  8. Experiment list: SRX507380 [Chip-atlas[Archive

    Lifescience Database Archive (English)

    Full Text Available + (wildtype) || age of animals=1-5 day old || tissue=Ovaries || chip antibody=anti-HP1 || chip antibody vend...1770: WT anti-HP1- replicate#2; Drosophila melanogaster; ChIP-Seq source_name=WT_WT_anti-HP1 || strain=piwi/

  9. Experiment list: SRX507383 [Chip-atlas[Archive

    Lifescience Database Archive (English)

    Full Text Available + (wildtype) || age of animals=1-5 day old || tissue=Ovaries || chip antibody=Anti-H3K4me2 || chip antibody ... Anti-H3K4me2- replicate#1; Drosophila melanogaster; ChIP-Seq source_name=WT_WT_Anti-H3K4me2 || strain=piwi/

  10. Experiment list: SRX483598 [Chip-atlas[Archive

    Lifescience Database Archive (English)

    Full Text Available Fibroblast|Lineage=primaryCells|Description=Mouse Embryonic Fibroblast 16016755,91.4,7.6,429 GSM1342501: MEF ChIP input...; Mus musculus; ChIP-Seq source_name=Mouse embryonic fibroblasts || chip antibody=input || treat

  11. Experiment list: SRX708730 [Chip-atlas[Archive

    Lifescience Database Archive (English)

    Full Text Available ell type=ES-derived neural progenitors (ventral) || chip antibody=anti-NKX6.1 || chip antibody info=Cockta...il of DSHB (F55A10, F55A12, F64A6B4, and F65A2), RD Systems (AF5857) and custom (fr

  12. Experiment list: SRX017071 [Chip-atlas[Archive

    Lifescience Database Archive (English)

    Full Text Available 0651,75.9,6.3,19031 GSM515677: PolII Nterm Doxycycline12hr ChIP Seq source_name=ZHBTc4 mES cells || cell typ...e=ZHBTc4 mES cells || shrna=no || small molecule=Doxycycline 12 hour || chip antibody=RNA Pol II (Rpb1 N-ter

  13. Experiment list: SRX017070 [Chip-atlas[Archive

    Lifescience Database Archive (English)

    Full Text Available 5532,69.7,6.7,17631 GSM515676: PolII Nterm Doxycycline0hr ChIP Seq source_name=ZHBTc4 mES cells || cell type...=ZHBTc4 mES cells || shrna=no || small molecule=Doxycycline 0 hour || chip antibody=RNA Pol II (Rpb1 N-termi

  14. Experiment list: SRX017072 [Chip-atlas[Archive

    Lifescience Database Archive (English)

    Full Text Available 5964,74.5,6.1,18022 GSM515678: PolII Nterm Doxycycline24r ChIP Seq source_name=ZHBTc4 mES cells || cell type...=ZHBTc4 mES cells || shrna=no || small molecule=Doxycycline 24 hour || chip antibody=RNA Pol II (Rpb1 N-term

  15. Experiment list: SRX262785 [Chip-atlas[Archive

    Lifescience Database Archive (English)

    Full Text Available H3T3_MRTFA_03 || cell line=NIH3T3 fibroblasts || genotype=normal || chip antibody=MRTF-A || chip antibody vendor=Santa Cruz Biotechno...logy http://dbarchive.biosciencedbc.jp/kyushu-u/mm9/each

  16. Experiment list: SRX262781 [Chip-atlas[Archive

    Lifescience Database Archive (English)

    Full Text Available hnology http://dbarchive.biosciencedbc.jp/kyushu-u/mm9/e..._name=NIH3T3_SRF_15 || cell line=NIH3T3 fibroblasts || genotype=normal || chip antibody=SRF || chip antibody vendor=Santa Cruz Biotec

  17. Experiment list: SRX262787 [Chip-atlas[Archive

    Lifescience Database Archive (English)

    Full Text Available nology http://dbarchive.biosciencedbc.jp/kyushu-u/mm9/ea...IH3T3_MRTFA_LAT || cell line=NIH3T3 fibroblasts || genotype=normal || chip antibody=MRTF-A || chip antibody vendor=Santa Cruz Biotech

  18. Experiment list: SRX262790 [Chip-atlas[Archive

    Lifescience Database Archive (English)

    Full Text Available IH3T3_MRTFB_15 || cell line=NIH3T3 fibroblasts || genotype=normal || chip antibody=MRTF-B || chip antibody vendor=Santa Cruz Biotechn...ology http://dbarchive.biosciencedbc.jp/kyushu-u/mm9/eac

  19. Experiment list: SRX143826 [Chip-atlas[Archive

    Lifescience Database Archive (English)

    Full Text Available lab description=Ren - Ludwig Institue for Cancer Research || datatype=ChipSeq || datatype description=Chrom...34: LICR ChipSeq Thymus CTCF adult-8wks source_name=Thymus || biomaterial_provider=LICR lab || lab=LICR-m ||

  20. Experiment list: SRX150514 [Chip-atlas[Archive

    Lifescience Database Archive (English)

    Full Text Available is=Adenocarcinoma 50607581,77.1,8.7,1126 GSM935435: Harvard ChipSeq HeLa-S3 BRF2 std source_name=HeLa-S3 || ...biomaterial_provider=ATCC || lab=Harvard || lab description=Struhl - Harvard University || datatype=ChipSeq

  1. Experiment list: SRX150495 [Chip-atlas[Archive

    Lifescience Database Archive (English)

    Full Text Available is=Adenocarcinoma 62508352,67.6,8.4,1556 GSM935416: Harvard ChipSeq HeLa-S3 ZZZ3 std source_name=HeLa-S3 || ...biomaterial_provider=ATCC || lab=Harvard || lab description=Struhl - Harvard University || datatype=ChipSeq

  2. Experiment list: SRX150568 [Chip-atlas[Archive

    Lifescience Database Archive (English)

    Full Text Available is=Adenocarcinoma 59265240,72.4,16.4,4779 GSM935489: Harvard ChipSeq HeLa-S3 RPC155 std source_name=HeLa-S3 ...|| biomaterial_provider=ATCC || lab=Harvard || lab description=Struhl - Harvard University || datatype=ChipS

  3. Experiment list: SRX150496 [Chip-atlas[Archive

    Lifescience Database Archive (English)

    Full Text Available ein-Barr Virus 63040797,85.0,19.7,1435 GSM935417: Harvard ChipSeq GM12878 SPT20 std source_name=GM12878 || b...gId=165&q=GM12878 || lab=Harvard || lab description=Struhl - Harvard University || datatype=ChipSeq || datat

  4. Experiment list: SRX150585 [Chip-atlas[Archive

    Lifescience Database Archive (English)

    Full Text Available -Barr Virus 32926476,94.0,12.0,2668 GSM935506: Harvard ChipSeq GM12878 NF-YA IgG-mus source_name=GM12878 || ...PgId=165&q=GM12878 || lab=Harvard || lab description=Struhl - Harvard University || datatype=ChipSeq || data

  5. Experiment list: SRX150661 [Chip-atlas[Archive

    Lifescience Database Archive (English)

    Full Text Available is=Adenocarcinoma 59396606,71.7,11.1,1200 GSM935582: Harvard ChipSeq HeLa-S3 BRF1 std source_name=HeLa-S3 ||... biomaterial_provider=ATCC || lab=Harvard || lab description=Struhl - Harvard University || datatype=ChipSeq

  6. Experiment list: SRX150565 [Chip-atlas[Archive

    Lifescience Database Archive (English)

    Full Text Available =Adenocarcinoma 54953593,74.3,12.2,1703 GSM935486: Harvard ChipSeq HeLa-S3 BDP1 std source_name=HeLa-S3 || b...iomaterial_provider=ATCC || lab=Harvard || lab description=Struhl - Harvard University || datatype=ChipSeq |

  7. Experiment list: SRX037432 [Chip-atlas[Archive

    Lifescience Database Archive (English)

    Full Text Available s from PBMC, normal || gender=male || cell type=aTconv cells || chip antibody=H3K4me1 || chip antibody vendo...=peripheral blood mononuclear cells 14792460,17.0,2.9,5804 GSM648494: aTconv-H3K4me1 source_name=aTconv cell

  8. Experiment list: SRX183788 [Chip-atlas[Archive

    Lifescience Database Archive (English)

    Full Text Available idin ChIP || chip antibody=Strepdavidin http://dbarchive.biosciencedbc.jp/kyushu-u/...us musculus; ChIP-Seq source_name=nTreg cells, Foxo1tagBirA mice || cell type=nTreg, Foxo1tagBirA strepdav

  9. Experiment list: SRX682274 [Chip-atlas[Archive

    Lifescience Database Archive (English)

    Full Text Available IPseq; Mus musculus; ChIP-Seq source_name=CD4+ cells, Foxo1tagBirA mice || strain=C57BL/6 || cell type=CD4+, Foxo1tagBirA strepdavid...in ChIP || chip antibody=Strepdavidin http://dbarchive.bi

  10. Experiment list: SRX248302 [Chip-atlas[Archive

    Lifescience Database Archive (English)

    Full Text Available e, 4th ed) 49253711,21.6,40.8,8706 GSM1089894: Ehf ChIP; Mus musculus; ChIP-Seq source_name=mouse corneal ep...ithelium || strain=C57Bl/6 || genotype/variation=wild type || tissue=corneal epithelium || chip antibody=ESE

  11. Experiment list: SRX507382 [Chip-atlas[Archive

    Lifescience Database Archive (English)

    Full Text Available + (wildtype) || age of animals=1-5 day old || tissue=Ovaries || chip antibody=Anti-H3K9me3 || chip antibody ... Anti-H3K9me3- replicate#2; Drosophila melanogaster; ChIP-Seq source_name=WT_WT_Anti-H3K9me3 || strain=piwi/

  12. Experiment list: SRX170377 [Chip-atlas[Archive

    Lifescience Database Archive (English)

    Full Text Available Diagnosis=Normal 11861200,76.8,8.0,229 GSM971950: HEK293 HP1b ChIPSeq; Homo sapiens; ChIP-Seq source_name=HEK293..., HP1b ChIP || cell line=HEK293 || chip antibody=anti-FLAG M2 affinity gel || antibody vendor=Sigma-Aldr

  13. Experiment list: SRX170374 [Chip-atlas[Archive

    Lifescience Database Archive (English)

    Full Text Available Diagnosis=Normal 12901656,89.7,3.2,445 GSM971947: HEK293 Brd3 ChIPSeq; Homo sapiens; ChIP-Seq source_name=HEK293..., Brd3 ChIP || cell line=HEK293 || chip antibody=anti-FLAG M2 affinity gel || antibody vendor=Sigma-Aldr

  14. Experiment list: SRX170373 [Chip-atlas[Archive

    Lifescience Database Archive (English)

    Full Text Available Diagnosis=Normal 12749066,94.0,7.9,19829 GSM971946: HEK293 Brd2 ChIPSeq; Homo sapiens; ChIP-Seq source_name=HEK293..., Brd2 ChIP || cell line=HEK293 || chip antibody=anti-FLAG M2 affinity gel || antibody vendor=Sigma-Al

  15. Experiment list: SRX170375 [Chip-atlas[Archive

    Lifescience Database Archive (English)

    Full Text Available Diagnosis=Normal 13813513,90.4,3.3,191 GSM971948: HEK293 Brd4 ChIPSeq; Homo sapiens; ChIP-Seq source_name=HEK293..., Brd4 ChIP || cell line=HEK293 || chip antibody=anti-FLAG M2 affinity gel || antibody vendor=Sigma-Aldr

  16. Experiment list: SRX170376 [Chip-atlas[Archive

    Lifescience Database Archive (English)

    Full Text Available Diagnosis=Normal 9474255,92.7,4.5,398 GSM971949: HEK293 HP1a ChIPSeq; Homo sapiens; ChIP-Seq source_name=HEK293..., HP1a ChIP || cell line=HEK293 || chip antibody=anti-FLAG M2 affinity gel || antibody vendor=Sigma-Aldri

  17. Experiment list: SRX1038526 [Chip-atlas[Archive

    Lifescience Database Archive (English)

    Full Text Available 695719: H119 Red1 ChIP biological replicate 2; Saccharomyces cerevisiae; ChIP-Seq source_name=Red1 ChIP of H119 biological...SRX1038526 sacCer3 TFs and others RED1 Yeast strain SK1 NA 6440074,94.5,38.5,0 GSM1

  18. Experiment list: SRX1038538 [Chip-atlas[Archive

    Lifescience Database Archive (English)

    Full Text Available 695731: H7660 Red1 ChIP in rec8 delta biological replicate 2; Saccharomyces cerevisiae; ChIP-Seq source_name...=Red1 ChIP in rec8 delta biological replicate 2 || strain=sk1 || meiotic timepoint=3 hour || genotype=rec8 d

  19. Experiment list: SRX1038532 [Chip-atlas[Archive

    Lifescience Database Archive (English)

    Full Text Available 695725: H4471 Rec8 ChIP biological replicate 2; Saccharomyces cerevisiae; ChIP-Seq source_name=Red1 ChIP of H4471 biological...SRX1038532 sacCer3 TFs and others RED1 Yeast strain SK1 NA 1426016,92.6,26.8,0 GSM1

  20. Experiment list: SRX1038542 [Chip-atlas[Archive

    Lifescience Database Archive (English)

    Full Text Available 1695735: H8083 Red1 ChIP in pREC8-SCC1 biological replicate 2; Saccharomyces cerevisiae; ChIP-Seq source_nam...e=Red1 ChIP in pREC8-SCC1 biological replicate 2 || strain=sk1 || meiotic timepoint=3 hour || genotype=pREC8