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Sample records for assisted molecular beam

  1. Beam assisted molecular rearrangement observed by TDPAD for fluorine complexes in diamond

    Science.gov (United States)

    Sideras-Haddad, E.; Connell, S. H.; Sellschop, J. P. F.; Bharuth-Ram, K.; Stemmet, M. C.; Naidoo, S.; Appel, H.

    1992-02-01

    Time dependent perturbed angular distribution (TDPAD) measurements have consistently revealed two unique sites for recoil implanted 19F in different types of natural diamonds. These correspond to quadrupole coupling constants of 63(2) and 56(2) MHz. The first corresponds to the formation of a C-F bond at an intrabond site and the second is interpreted as a distorted substitutional site. A third resolved coupling constant of 33(3) MHz is associated with a broadly distributed site with random electric field gradient orientation which might be indicative of local amorphous conditions and is interpreted as arising from the formation of H-F molecular complexes. A strong dependence on the incident proton dose of this fraction has been observed for all types of natural diamonds. A model proposed for such an effect involves a beam-assisted mechanism which accounts for disruption of existing hydrogenic molecular complexes and rearrangement of ions under the influence of intense electronic excitation caused by the incident proton beam. Such results give new insights on 19F as a TDPAD probe. Its small size and chemical affinity render it particularly appropriate for studies of molecular complexes with TDPAD.

  2. Si Incorporation in InP Nanowires Grown by Au-Assisted Molecular Beam Epitaxy

    Directory of Open Access Journals (Sweden)

    Lorenzo Rigutti

    2009-01-01

    Full Text Available We report on the growth, structural characterization, and conductivity studies of Si-doped InP nanowires grown by Au-assisted molecular beam epitaxy. It is shown that Si doping reduces the mean diffusion length of adatoms on the lateral nanowire surface and consequently reduces the nanowire growth rate and promotes lateral growth. A resistivity as low as 5.1±0.3×10−5 Ω⋅cm is measured for highly doped nanowires. Two dopant incorporation mechanisms are discussed: incorporation via catalyst particle and direct incorporation on the nanowire sidewalls. The first mechanism is shown to be less efficient than the second one, resulting in inhomogeneous radial dopant distribution.

  3. Plasma-assisted molecular beam epitaxy growth of ZnSnN2

    Science.gov (United States)

    Feldberg, Nathaniel; Aldous, James; Yao, Yuan; Tanveer, Imtiaz; Keen, Benjamin; Linhart, Wojciech; Veal, Tim; Song, Young-Wook; Reeves, Roger; Durbin, Steve

    2012-02-01

    The Zn-IV-nitrides are a promising series of ``earth abundant element'' semiconductors with a predicted band gap range of 0.6 eV to 5.4 eV, which, like the (Al,Ga,In)N family, spans the entire visible solar spectrum. Considering this alternative family has a number of advantages, including the avoidance of indium, the price of which has varied almost an order of magnitude over the past decade, and surface electron accumulation which is present in the In-rich alloys. Not all members of this family have yet been synthesized, in particular ZnSnN2, the most important member for PV with its predicted band gap of approximately 2 eV. We have successfully grown a series of these films using plasma-assisted molecular beam epitaxy using elemental Zn and Sn sources. In this report, we discuss the relationship between process parameters and microstructure, as well as stoichiometry as determined by Rutherford backscattering spectrometry. Additionally, we provide preliminary estimates for its bandgap energy based on photoluminescence and optical absorption.

  4. Growth of epitaxial ZnO films on sapphire substrates by plasma assisted molecular beam epitaxy

    Science.gov (United States)

    Hyndman, Adam R.; Allen, Martin W.; Reeves, Roger J.

    2014-03-01

    Epitaxial layers of ZnO have been grown on c-plane, (0001) sapphire substrates by plasma assisted molecular beam epitaxy. The oxygen:zinc flux ratio was found to be crucial in obtaining a film with a smooth surface and good crystallinity. When increasing film thickness from ~80 to 220 nm we observed an increase in the streakiness of RHEED images, and XRD revealed a reduction in crystal strain and increase in crystal alignment. A film with surface roughness of 0.5 nm and a XRD rocking curve FWHM of 0.1 for the main ZnO peak (0002) was achieved by depositing a low temperature ZnO buffer layer at 450 °C and then growing for 120 minutes at 700 °C with a Zn-cell temperature of 320 °C and an oxygen partial pressure of 7e-7 Torr. We found novel structures on two samples grown outside of our ideal oxygen:zinc flux ratio. SEM images of a sample believed to have been grown in a Zn-rich environment showed flower like structures up to 150 um in diameter which appear to have formed during growth. Another sample believed to have been deposited in a Zn-deficient environment had rings approximately 1.5 um in diameter scattered on its surface.

  5. Palladium assisted hetroepitaxial growth of an InAs nanowire by molecular beam epitaxy

    International Nuclear Information System (INIS)

    The palladium (Pd) assisted epitaxial growth of technologically important InAs nanowires grown on GaAs{111}B substrates using molecular beam epitaxy is reported. The grown free-standing InAs nanowires adapted a vapor–liquid–solid growth mechanism. The impacts of the catalyst particle density, growth temperature and input V/III precursor ratio have been investigated to identify better growth conditions for getting high-density non-<111>-orientated InAs nanowires. We assert here that two kind of nanowires are observed, one having a pure zinc-blende crystalline structure free of stacking faults, and the other with a defect-free wurtzite crystalline structure. However, few of them have defect imperfections too. The L- and Y-shaped nanowires confirm similar surface free energies for possible <110> growth directions. These unusual growth directions are attributed to the effect of the catalyst material as well as the surface-induced strain at the interface between the grown nanowires with substrates. The structural features of the grown nanowires are studied by employing scanning and transmission electron microscopic techniques. The obtained TEM results confirm that the nanowire catalyst interface is not a straightforward zinc-blende structured nanowire. Energy dispersive x-ray (EDX) analysis reveals that the tip of the grown nanowires with the chemical composition of Pd and In have a nearly 50:50 ratio, while the nanowire body did not have any catalyst traces other than the composition of InAs for both type of nanowires. The obtained high angle annular dark field (HAADF) TEM image for both types of nanowires along with the intensity profile provided evidence for cubic as well as hexagonal facets. (paper)

  6. Photoluminescence from GaAs nanodisks fabricated by using combination of neutral beam etching and atomic hydrogen-assisted molecular beam epitaxy regrowth

    Energy Technology Data Exchange (ETDEWEB)

    Kaizu, Toshiyuki; Okada, Yoshitaka [Research Center for Advanced Science and Technology, The University of Tokyo, 4-6-1 Komaba, Meguro-ku, Tokyo 153-8904 (Japan); Japan Science and Technology Agency, CREST, 5 Sanbancho, Chiyoda-ku, Tokyo 102-0075 (Japan); Tamura, Yosuke; Igarashi, Makoto; Hu, Weiguo; Tsukamoto, Rikako [Japan Science and Technology Agency, CREST, 5 Sanbancho, Chiyoda-ku, Tokyo 102-0075 (Japan); Institute of Fluid Science, Tohoku University, 2-1-1 Katahira, Aoba-ku, Sendai 980-8577 (Japan); Yamashita, Ichiro [Japan Science and Technology Agency, CREST, 5 Sanbancho, Chiyoda-ku, Tokyo 102-0075 (Japan); Graduate School of Materials Science, Nara Institute of Science and Technology, 8916-5 Takayama, Ikoma, Nara 630-0192 (Japan); Samukawa, Seiji [Japan Science and Technology Agency, CREST, 5 Sanbancho, Chiyoda-ku, Tokyo 102-0075 (Japan); Institute of Fluid Science, Tohoku University, 2-1-1 Katahira, Aoba-ku, Sendai 980-8577 (Japan); WPI Advanced Institute for Materials Research, Tohoku University, 2-1-1 Katahira, Aoba-ku, Sendai 980-8577 (Japan)

    2012-09-10

    We have fabricated GaAs nanodisk (ND) structures by using a combination of neutral beam etching process and atomic hydrogen-assisted molecular beam epitaxy regrowth. We have observed clear photoluminescence (PL) emissions from GaAs NDs. The peak energy showed a blueshift due to the quantum confinement in three spatial dimensions, and it agreed with the theoretically estimated transition energy. The PL results also showed that the cap-layer disks act as radiative recombination centers. We have confirmed that the PL emission originates from the GaAs NDs, and our approach is effective for the fabrication of high quality ND structures.

  7. Growth of Gold-assisted Gallium Arsenide Nanowires on Silicon Substrates via Molecular Beam Epitaxy

    Directory of Open Access Journals (Sweden)

    Ramon M. delos Santos

    2008-06-01

    Full Text Available Gallium arsenide nanowires were grown on silicon (100 substrates by what is called the vapor-liquid-solid (VLS growth mechanism using a molecular beam epitaxy (MBE system. Good quality nanowires with surface density of approximately 108 nanowires per square centimeter were produced by utilizing gold nanoparticles, with density of 1011 nanoparticles per square centimeter, as catalysts for nanowire growth. X-ray diffraction measurements, scanning electron microscopy, transmission electron microscopy and Raman spectroscopy revealed that the nanowires are epitaxially grown on the silicon substrates, are oriented along the [111] direction and have cubic zincblende structure.

  8. Photoelectron photoion molecular beam spectroscopy

    International Nuclear Information System (INIS)

    The use of supersonic molecular beams in photoionization mass spectroscopy and photoelectron spectroscopy to assist in the understanding of photoexcitation in the vacuum ultraviolet is described. Rotational relaxation and condensation due to supersonic expansion were shown to offer new possibilities for molecular photoionization studies. Molecular beam photoionization mass spectroscopy has been extended above 21 eV photon energy by the use of Stanford Synchrotron Radiation Laboratory (SSRL) facilities. Design considerations are discussed that have advanced the state-of-the-art in high resolution vuv photoelectron spectroscopy. To extend gas-phase studies to 160 eV photon energy, a windowless vuv-xuv beam line design is proposed

  9. Plasma-assisted molecular beam epitaxy of (11-22)-oriented 3-nitrides

    International Nuclear Information System (INIS)

    This work reports on the molecular-beam epitaxial growth of (1122)-oriented semi-polar nitride semiconductors using m-sapphire substrates. The (1122) crystallographic orientation is predefined by AlN deposition on m-sapphire under N excess. On top of this AlN buffer layer, undoped or Si-doped two-dimensional GaN(1122) films are formed under Ga-rich conditions, with a stabilized Ga-excess ad-layer of about 1.05±0.10 ML. In contrast, Mg tends to segregate on the GaN surface, inhibiting the self-regulated Ga excess film. Nevertheless, uniform Mg incorporation can be obtained, and p-type conductivity was achieved. GaN/AlN quantum wells are synthesized by deposition of the binary compounds under the above-described conditions. In the case of GaN/AlN quantum dots, the three-dimensional transition is induced by a growth interruption under vacuum. The reduction of the internal electric field in GaN/AlN nano-structures is confirmed by the blue shift of the photoluminescence spectrum and by the short photoluminescence decay times measured at low temperature. These results are consistent with theoretical calculations of the electronic structure. (author)

  10. NO-assisted molecular-beam epitaxial growth of nitrogen substituted EuO

    Science.gov (United States)

    Wicks, R.; Altendorf, S. G.; Caspers, C.; Kierspel, H.; Sutarto, R.; Tjeng, L. H.; Damascelli, A.

    2012-04-01

    We have investigated a method for substituting oxygen with nitrogen in EuO thin films, which is based on molecular beam epitaxy distillation with NO gas as the oxidizer. By varying the NO gas pressure, we produce crystalline, epitaxial EuO1 -xNx films with good control over the films' nitrogen concentration. In situ x-ray photoemission spectroscopy reveals that nitrogen substitution is connected to the formation Eu3+4f6 and a corresponding decrease in the number of Eu2+4f7, indicating that nitrogen is being incorporated in its 3- oxidation state. While small amounts of Eu3+ in over-oxidized Eu1-δO thin films lead to a drastic suppression of the ferromagnetism, the formation of Eu3+ in EuO1-xNx still allows the ferromagnetic phase to exist with an unaffected Tc, thus providing an ideal model system to study the interplay between the magnetic f7 (J = 7/2) and the non-magnetic f6 (J = 0) states close to the Fermi level.

  11. Direct growth of graphene on in situ epitaxial hexagonal boron nitride flakes by plasma-assisted molecular beam epitaxy

    International Nuclear Information System (INIS)

    Hexagonal boron nitride (h-BN) single-crystal domains were grown on cobalt (Co) substrates at a substrate temperature of 850–900 °C using plasma-assisted molecular beam epitaxy. Three-point star shape h-BN domains were observed by scanning electron microscopy, and confirmed by Raman and X-ray photoelectron spectroscopy. The h-BN on Co template was used for in situ growth of multilayer graphene, leading to an h-BN/graphene heterostructure. Carbon atoms preferentially nucleate on Co substrate and edges of h-BN and then grow laterally to form continuous graphene. Further introduction of carbon atoms results in layer-by-layer growth of graphene on graphene and lateral growth of graphene on h-BN until it may cover entire h-BN flakes

  12. Room temperature Ultraviolet B emission from InAlGaN films synthesized by plasma-assisted molecular beam epitaxy

    Energy Technology Data Exchange (ETDEWEB)

    Kong, W., E-mail: wei.kong@duke.edu; Jiao, W. Y.; Kim, T. H.; Brown, A. S. [Department of Electrical and Computer Engineering, Duke University, Durham, North Carolina 27708 (United States); Roberts, A. T. [Charles Bowden Laboratory, Army Aviation and Missile RD& E Center, Redstone Arsenal, Alabama 35898 (United States); Fournelle, J. [Department of Geoscience, University of Wisconsin, Madison, Wisconsin 53706 (United States); Losurdo, M. [CNR-NANOTEC, Istituto di Nanotecnologia, via Orabona, 4-70126 Bari (Italy); Everitt, H. O. [Charles Bowden Laboratory, Army Aviation and Missile RD& E Center, Redstone Arsenal, Alabama 35898 (United States); Department of Physics, Duke University, Durham, North Carolina 27708 (United States)

    2015-09-28

    Thin films of the wide bandgap quaternary semiconductor In{sub x}Al{sub y}Ga{sub (1−x−y)}N with low In (x = 0.01–0.05) and high Al composition (y = 0.40–0.49) were synthesized on GaN templates by plasma-assisted molecular beam epitaxy. High-resolution X-ray diffraction was used to correlate the strain accommodation of the films to composition. Room temperature ultraviolet B (280 nm–320 nm) photoluminescence intensity increased with increasing In composition, while the Stokes shift remained relatively constant. The data suggest a competition between radiative and non-radiative recombination occurs for carriers, respectively, localized at centers produced by In incorporation and at dislocations produced by strain relaxation.

  13. Catalyst-free highly vertically aligned ZnO nanoneedle arrays grown by plasma-assisted molecular beam epitaxy

    Energy Technology Data Exchange (ETDEWEB)

    Wang, J.S.; Chiu, K.C. [Chung Yuan Christian University, Department of Physics, Chung-Li (China); Chung Yuan Christian University, Center for Nano-Technology, Chung-Li (China); Yang, C.S. [Tatung University, Graduate Institute of Electro-Optical Engineering, Taipei (China); Chen, P.I.; Su, C.F.; Chen, W.J. [Chung Yuan Christian University, Department of Physics, Chung-Li (China); Chou, W.C. [National Chiao Tung University, Department of Electrophysics, Hsin-Chu (China)

    2009-11-15

    This work describes the growth of highly vertically aligned ZnO nanoneedle arrays on wafer-scale catalyst-free c-plane sapphire substrates by plasma-assisted molecular beam epitaxy under high Zn flux conditions. The photoluminescence spectrum of the as-grown samples reveals strong free exciton emissions and donor-bound exciton emissions with an excellent full width at half maximum (FWHM) of 1.4 meV. The field emission of highly vertically aligned ZnO nanoneedle arrays closely follows the Fowler-Nordheim theory. The turn-on electric field was about 5.9 V/{mu}m with a field enhancement factor {beta} of around 793. (orig.)

  14. Catalyst-free highly vertically aligned ZnO nanoneedle arrays grown by plasma-assisted molecular beam epitaxy

    Science.gov (United States)

    Wang, J. S.; Yang, C. S.; Chen, P. I.; Su, C. F.; Chen, W. J.; Chiu, K. C.; Chou, W. C.

    2009-11-01

    This work describes the growth of highly vertically aligned ZnO nanoneedle arrays on wafer-scale catalyst-free c-plane sapphire substrates by plasma-assisted molecular beam epitaxy under high Zn flux conditions. The photoluminescence spectrum of the as-grown samples reveals strong free exciton emissions and donor-bound exciton emissions with an excellent full width at half maximum (FWHM) of 1.4 meV. The field emission of highly vertically aligned ZnO nanoneedle arrays closely follows the Fowler-Nordheim theory. The turn-on electric field was about 5.9 V/µm with a field enhancement factor β of around 793.

  15. GaN Schottky diodes with single-crystal aluminum barriers grown by plasma-assisted molecular beam epitaxy

    Science.gov (United States)

    Tseng, H. Y.; Yang, W. C.; Lee, P. Y.; Lin, C. W.; Cheng, Kai-Yuan; Hsieh, K. C.; Cheng, K. Y.; Hsu, C.-H.

    2016-08-01

    GaN-based Schottky barrier diodes (SBDs) with single-crystal Al barriers grown by plasma-assisted molecular beam epitaxy are fabricated. Examined using in-situ reflection high-energy electron diffractions, ex-situ high-resolution x-ray diffractions, and high-resolution transmission electron microscopy, it is determined that epitaxial Al grows with its [111] axis coincident with the [0001] axis of the GaN substrate without rotation. In fabricated SBDs, a 0.2 V barrier height enhancement and 2 orders of magnitude reduction in leakage current are observed in single crystal Al/GaN SBDs compared to conventional thermal deposited Al/GaN SBDs. The strain induced piezoelectric field is determined to be the major source of the observed device performance enhancements.

  16. Direct growth of graphene on in situ epitaxial hexagonal boron nitride flakes by plasma-assisted molecular beam epitaxy

    Energy Technology Data Exchange (ETDEWEB)

    Xu, Zhongguang; Zheng, Renjing; Khanaki, Alireza; Zuo, Zheng; Liu, Jianlin, E-mail: jianlin@ece.ucr.edu [Quantum Structures Laboratory, Department of Electrical and Computer Engineering, University of California, Riverside, California 92521 (United States)

    2015-11-23

    Hexagonal boron nitride (h-BN) single-crystal domains were grown on cobalt (Co) substrates at a substrate temperature of 850–900 °C using plasma-assisted molecular beam epitaxy. Three-point star shape h-BN domains were observed by scanning electron microscopy, and confirmed by Raman and X-ray photoelectron spectroscopy. The h-BN on Co template was used for in situ growth of multilayer graphene, leading to an h-BN/graphene heterostructure. Carbon atoms preferentially nucleate on Co substrate and edges of h-BN and then grow laterally to form continuous graphene. Further introduction of carbon atoms results in layer-by-layer growth of graphene on graphene and lateral growth of graphene on h-BN until it may cover entire h-BN flakes.

  17. Effect of growth temperature on defects in epitaxial GaN film grown by plasma assisted molecular beam epitaxy

    Directory of Open Access Journals (Sweden)

    S. S. Kushvaha

    2014-02-01

    Full Text Available We report the effect of growth temperature on defect states of GaN epitaxial layers grown on 3.5 μm thick GaN epi-layer on sapphire (0001 substrates using plasma assisted molecular beam epitaxy. The GaN samples grown at three different substrate temperatures at 730, 740 and 750 °C were characterized using atomic force microscopy and photoluminescence spectroscopy. The atomic force microscopy images of these samples show the presence of small surface and large hexagonal pits on the GaN film surfaces. The surface defect density of high temperature grown sample is smaller (4.0 × 108 cm−2 at 750 °C than that of the low temperature grown sample (1.1 × 109 cm−2 at 730 °C. A correlation between growth temperature and concentration of deep centre defect states from photoluminescence spectra is also presented. The GaN film grown at 750 °C exhibits the lowest defect concentration which confirms that the growth temperature strongly influences the surface morphology and affects the optical properties of the GaN epitaxial films.

  18. Direct growth of hexagonal boron nitride/graphene heterostructures on cobalt foil substrates by plasma-assisted molecular beam epitaxy

    Science.gov (United States)

    Xu, Zhongguang; Khanaki, Alireza; Tian, Hao; Zheng, Renjing; Suja, Mohammad; Zheng, Jian-Guo; Liu, Jianlin

    2016-07-01

    Graphene/hexagonal boron nitride (G/h-BN) heterostructures have attracted a great deal of attention because of their exceptional properties and wide variety of potential applications in nanoelectronics. However, direct growth of large-area, high-quality, and stacked structures in a controllable and scalable way remains challenging. In this work, we demonstrate the synthesis of h-BN/graphene (h-BN/G) heterostructures on cobalt (Co) foil by sequential deposition of graphene and h-BN layers using plasma-assisted molecular beam epitaxy. It is found that the coverage of h-BN layers can be readily controlled on the epitaxial graphene by growth time. Large-area, uniform-quality, and multi-layer h-BN films on thin graphite layers were achieved. Based on an h-BN (5-6 nm)/G (26-27 nm) heterostructure, capacitor devices with Co(foil)/G/h-BN/Co(contact) configuration were fabricated to evaluate the dielectric properties of h-BN. The measured breakdown electric field showed a high value of ˜2.5-3.2 MV/cm. Both I-V and C-V characteristics indicate that the epitaxial h-BN film has good insulating characteristics.

  19. InN nanorods prepared with CrN nanoislands by plasma-assisted molecular beam epitaxy

    Directory of Open Access Journals (Sweden)

    Young Sheng-Joue

    2011-01-01

    Full Text Available Abstract The authors report the influence of CrN nanoisland inserted on growth of baseball-bat InN nanorods by plasma-assisted molecular beam epitaxy under In-rich conditions. By inserting CrN nanoislands between AlN nucleation layer and the Si (111 substrate, it was found that we could reduce strain form Si by inserting CrN nanoisland, FWHM of the x-ray rocking curve measured from InN nanorods from 3,299 reduced to 2,115 arcsec. It is due to the larger strain from lattice miss-match of the film-like InN structure; however, the strain from lattice miss-match was obvious reduced owing to CrN nanoisland inserted. The TEM images confirmed the CrN structures and In droplets dissociation from InN, by these results, we can speculate the growth mechanism of baseball-bat-like InN nanorods.

  20. Hybrid ZnO/GaN distributed Bragg reflectors grown by plasma-assisted molecular beam epitaxy

    Directory of Open Access Journals (Sweden)

    David Adolph

    2016-08-01

    Full Text Available We demonstrate crack-free ZnO/GaN distributed Bragg reflectors (DBRs grown by hybrid plasma-assisted molecular beam epitaxy using the same growth chamber for continuous growth of both ZnO and GaN without exposure to air. This is the first time these ZnO/GaN DBRs have been demonstrated. The Bragg reflectors consisted up to 20 periods as shown with cross-sectional transmission electron microscopy. The maximum achieved reflectance was 77% with a 32 nm wide stopband centered at 500 nm. Growth along both (0001 and (000 1 ̄ directions was investigated. Low-temperature growth as well as two-step low/high-temperature deposition was carried out where the latter method improved the DBR reflectance. Samples grown along the (0001 direction yielded a better surface morphology as revealed by scanning electron microscopy and atomic force microscopy. Reciprocal space maps showed that ZnO(000 1 ̄ /GaN reflectors are relaxed whereas the ZnO(0001/GaN DBRs are strained. The ability to n-type dope ZnO and GaN makes the ZnO(0001/GaN DBRs interesting for various optoelectronic cavity structures.

  1. Effects of AIN nucleation layer thickness on crystal quality of AIN grown by plasma-assisted molecular beam epitaxy

    Institute of Scientific and Technical Information of China (English)

    Ren Fan; Hao Zhi-Biao; Hu Jian-Nan; Zhang Chen; Luo Yi

    2010-01-01

    In this paper,the effects of thickness of AIN nucleation layer grown at high temperature on AIN epi-layer crystalline quality are investigated.Crack-free AIN samples with various nucleation thicknesses are grown on sapphire substrates by plasma-assisted molecular beam epitaxy.The AIN crystalline quality is analysed by transmission electron microscope and x-ray diffraction(XRD)rocking curves in both(002)and(102)planes.The surface profiles of nucleation layer with different thicknesses after in-situ annealing are also analysed by atomic force microscope.A critical nucleation thickness for realising high quality AIN films is found.When the nucleation thickness is above a certain value,the(102)XRD full width at half maximum(FWHM)of AIN bulk increases with nucleation thickness increasing,whereas the(002)XRD FWHM shows an opposite trend.These phenomena can be attributed to the characteristics of nucleation islands and the evolution of crystal grains during AIN main layer growth.

  2. Hybrid ZnO/GaN distributed Bragg reflectors grown by plasma-assisted molecular beam epitaxy

    Science.gov (United States)

    Adolph, David; Zamani, Reza R.; Dick, Kimberly A.; Ive, Tommy

    2016-08-01

    We demonstrate crack-free ZnO/GaN distributed Bragg reflectors (DBRs) grown by hybrid plasma-assisted molecular beam epitaxy using the same growth chamber for continuous growth of both ZnO and GaN without exposure to air. This is the first time these ZnO/GaN DBRs have been demonstrated. The Bragg reflectors consisted up to 20 periods as shown with cross-sectional transmission electron microscopy. The maximum achieved reflectance was 77% with a 32 nm wide stopband centered at 500 nm. Growth along both (0001) and (000 1 ¯ ) directions was investigated. Low-temperature growth as well as two-step low/high-temperature deposition was carried out where the latter method improved the DBR reflectance. Samples grown along the (0001) direction yielded a better surface morphology as revealed by scanning electron microscopy and atomic force microscopy. Reciprocal space maps showed that ZnO(000 1 ¯ )/GaN reflectors are relaxed whereas the ZnO(0001)/GaN DBRs are strained. The ability to n-type dope ZnO and GaN makes the ZnO(0001)/GaN DBRs interesting for various optoelectronic cavity structures.

  3. Ion beam assisted film growth

    CERN Document Server

    Itoh, T

    2012-01-01

    This volume provides up to date information on the experimental, theoretical and technological aspects of film growth assisted by ion beams.Ion beam assisted film growth is one of the most effective techniques in aiding the growth of high-quality thin solid films in a controlled way. Moreover, ion beams play a dominant role in the reduction of the growth temperature of thin films of high melting point materials. In this way, ion beams make a considerable and complex contribution to film growth. The volume will be essential reading for scientists, engineers and students working in thi

  4. Carbon doping of GaN with CBr4 in radio-frequency plasma-assisted molecular beam epitaxy

    OpenAIRE

    Green, D S; Mishra, U. K.; Speck, J.S.

    2004-01-01

    Carbon tetrabromide (CBr4) was studied as an intentional dopant during rf plasma molecular beam epitaxy of GaN. Secondary ion mass spectroscopy was used to quantify incorporation behavior. Carbon was found to readily incorporate under Ga-rich and N-rich growth conditions with no detectable bromine incorporation. The carbon incorporation [C] was found to be linearly related to the incident CBr4 flux. Reflection high-energy electron diffraction, atomic force microscopy and x-ray diffraction wer...

  5. Molecular beam epitaxy

    CERN Document Server

    Pamplin, Brian R

    1980-01-01

    Molecular Beam Epitaxy introduces the reader to the use of molecular beam epitaxy (MBE) in the generation of III-V and IV-VI compounds and alloys and describes the semiconductor and integrated optics reasons for using the technique. Topics covered include semiconductor superlattices by MBE; design considerations for MBE systems; periodic doping structure in gallium arsenide (GaAs); nonstoichiometry and carrier concentration control in MBE of compound semiconductors; and MBE techniques for IV-VI optoelectronic devices. The use of MBE to fabricate integrated optical devices and to study semicond

  6. The study of in situ scanning tunnelling microscope characterization on GaN thin film grown by plasma assisted molecular beam epitaxy

    International Nuclear Information System (INIS)

    The epitaxial growth of GaN by Plasma Assisted Molecular Beam Epitaxy was investigated by Scanning Tunnelling Microscope (STM). The GaN film was grown on initial GaN (0001) and monitored by in situ Reflection High Energy Electron Diffraction and STM during the growth. The STM characterization was carried out on different sub-films with increased thickness. The growth of GaN was achieved in 3D mode, and the hexagonal edge of GaN layers and growth gradient were observed. The final GaN was of Ga polarity and kept as (0001) orientation, without excess Ga adlayers or droplets formed on the surface.

  7. Structural, Optical and Electrical Properties of n-type GaN on Si (111) Grown by RF-plasma assisted Molecular Beam Epitaxy

    International Nuclear Information System (INIS)

    In this paper, we present the study of the structural, optical and electrical of n-type GaN grown on silicon (111) by RF plasma-assisted molecular beam epitaxy (RF-MBE). X-ray diffraction (XRD) measurement reveals that the GaN was epitaxially grown on silicon. For the photoluminescence (PL) measurement, a sharp and intense peak at 364.5 nm indicates that the sample is of high optical quality. Hall effect measurement shows that the film has a carrier concentration of 3.28x1019 cm-3. The surface of the n-type GaN was smooth and no any cracks and pits

  8. Analysis of Mg content of Zn1-xMgxO film grown on sapphire substrates by plasma-assisted molecular beam epitaxy

    Institute of Scientific and Technical Information of China (English)

    YAN Fengping; JIAN Shuisheng; K. Ogata; K. Koike; S. Sasa; M. Inoue; M. Yano

    2004-01-01

    The Mg content of Zn1-xMgxO film grown on A-sapphire substrates by plasma-assisted molecular beam epitaxy is measured by inductively coupled plasma (ICP)and electronic probe microanalysis (EPMA). A theoretical model for analyzing the difference in the Mg content between Zn-rich and Zn-deficient conditions in the growth process is established, and the mathematical relation between Mg content and the temperature of the Mg cell is formulated under Zn-rich condition. The formula derived is proven to be correct by experiments.

  9. Molecular beam epitaxy of GaAs nanowires and their sustainability for optoelectronic applications. Comparing Au- and self-assisted growth methods

    Energy Technology Data Exchange (ETDEWEB)

    Breuer, Steffen

    2011-09-28

    In this work the synthesis of GaAs nanowires by molecular beam epitaxy (MBE) using the vapour-liquid-solid (VLS) mechanism is investigated. A comparison between Au- and self-assisted VLS growth is at the centre of this thesis. While the Au-assisted method is established as a versatile tool for nanowire growth, the recently developed self-assisted variation results from the exchange of Au by Ga droplets and thus eliminates any possibility of Au incorporation. By both methods, we achieve nanowires with epitaxial alignment to the Si(111) substrates. Caused by differences during nanowire nucleation, a parasitic planar layer grows between the nanowires by the Au-assisted method, but can be avoided by the self-assisted method. Au-assisted nanowires grow predominantly in the metastable wurtzite crystal structure, while their self-assisted counterparts have the zincblende structure. All GaAs nanowires are fully relaxed and the strain arising from the lattice mismatch between GaAs and Si of 4.1 % is accommodated by misfit dislocations at the interface. Self-assisted GaAs nanowires are generally found to have vertical and non-polar side facets, while tilted and polar nanofacets were described for Au-assisted GaAs nanowires. We employ VLS nucleation theory to understand the effect of the droplet material on the lateral facets. Optoelectronic applications require long minority carrier lifetimes at room temperature. We fabricate GaAs/(Al,Ga)As core-shell nanowires and analyse them by transient photoluminescence (PL) spectroscopy. The results are 2.5 ns for the self-assisted nanowires as well as 9 ps for the Au-assisted nanowires. By temperature-dependent PL measurements we find a characteristic activation energy of 77 meV that is present only in the Au-assisted nanowires. We conclude that most likely Au is incorporated from the droplets into the GaAs nanowires and acts as a deep, non-radiative recombination centre.

  10. Molecular-beam scattering

    Science.gov (United States)

    Vernon, M. F.

    1983-07-01

    The molecular-beam technique has been used in three different experimental arrangements to study a wide range of inter-atomic and molecular forces. Chapter 1 reports results of a low-energy (0.2 kcal/mole) elastic-scattering study of the He-Ar pair potential. The purpose of the study was to accurately characterize the shape of the potential in the well region, by scattering slow He atoms produced by expanding a mixture of He in N2 from a cooled nozzle. Chapter 2 contains measurements of the vibrational predissociation spectra and product translational energy for clusters of water, benzene, and ammonia. The experiments show that most of the product energy remains in the internal molecular motions. Chapter 3 presents measurements of the reaction Na + HC1 (FEMALE) NAC1 + H at collision energies of 5.38 and 19.4 kcal/mole. This is the first study to resolve both scattering angle and velocity for the reaction of a short lived (16 nsec) electronic excited state. Descriptions are given of computer programs written to analyze molecular-beam expansions to extract information characterizing their velocity distributions, and to calculate accurate laboratory elastic-scattering differential cross sections accounting for the finite apparatus resolution. Experimental results which attempted to determine the efficiency of optically pumping the Li(2(2)P/sub 3/2/) and Na(3(2)P/sub 3/2) excited states are given. A simple three-level model for predicting the steady-state fraction of atoms in the excited state is included.

  11. Molecular-beam scattering

    Energy Technology Data Exchange (ETDEWEB)

    Vernon, M.F.

    1983-07-01

    The molecular-beam technique has been used in three different experimental arrangements to study a wide range of inter-atomic and molecular forces. Chapter 1 reports results of a low-energy (0.2 kcal/mole) elastic-scattering study of the He-Ar pair potential. The purpose of the study was to accurately characterize the shape of the potential in the well region, by scattering slow He atoms produced by expanding a mixture of He in N/sub 2/ from a cooled nozzle. Chapter 2 contains measurements of the vibrational predissociation spectra and product translational energy for clusters of water, benzene, and ammonia. The experiments show that most of the product energy remains in the internal molecular motions. Chapter 3 presents measurements of the reaction Na + HCl ..-->.. NaCl + H at collision energies of 5.38 and 19.4 kcal/mole. This is the first study to resolve both scattering angle and velocity for the reaction of a short lived (16 nsec) electronic excited state. Descriptions are given of computer programs written to analyze molecular-beam expansions to extract information characterizing their velocity distributions, and to calculate accurate laboratory elastic-scattering differential cross sections accounting for the finite apparatus resolution. Experimental results which attempted to determine the efficiency of optically pumping the Li(2/sup 2/P/sub 3/2/) and Na(3/sup 2/P/sub 3/2/) excited states are given. A simple three-level model for predicting the steady-state fraction of atoms in the excited state is included.

  12. Molecular-beam scattering

    International Nuclear Information System (INIS)

    The molecular-beam technique has been used in three different experimental arrangements to study a wide range of inter-atomic and molecular forces. Chapter 1 reports results of a low-energy (0.2 kcal/mole) elastic-scattering study of the He-Ar pair potential. The purpose of the study was to accurately characterize the shape of the potential in the well region, by scattering slow He atoms produced by expanding a mixture of He in N2 from a cooled nozzle. Chapter 2 contains measurements of the vibrational predissociation spectra and product translational energy for clusters of water, benzene, and ammonia. The experiments show that most of the product energy remains in the internal molecular motions. Chapter 3 presents measurements of the reaction Na + HCl → NaCl + H at collision energies of 5.38 and 19.4 kcal/mole. This is the first study to resolve both scattering angle and velocity for the reaction of a short lived (16 nsec) electronic excited state. Descriptions are given of computer programs written to analyze molecular-beam expansions to extract information characterizing their velocity distributions, and to calculate accurate laboratory elastic-scattering differential cross sections accounting for the finite apparatus resolution. Experimental results which attempted to determine the efficiency of optically pumping the Li(22P/sub 3/2/) and Na(32P/sub 3/2/) excited states are given. A simple three-level model for predicting the steady-state fraction of atoms in the excited state is included

  13. Effects of Rapid Thermal Annealing on Optical Properties of GaInNAs/GaAs Single Quantum Well Grown by Plasma-Assisted Molecular Beam Epitaxy

    Institute of Scientific and Technical Information of China (English)

    2000-01-01

    The effects of Rapid Thermal Annealing (RTA) on the optical properties of GaInNAs/GaAs Single Quantum Well (SQW) grown by plasma-assisted molecular beam epitaxy are investigated. Ion removal magnets were applied to reduce the ion damage during the growth process and the optical properties of GaInNAs/GaAs SQW are remarkably improved.RTA was carried out at 650℃ and its effect was studied by the comparising the roomtemperature PhotoLuminescence (PL) spectra for the non ion-removed (grown without magnets) sample with for the ion-removed (grown with magnets) one. The more significant improvement of PL characteristics for non ion-removed GaInNAs/GaAs SQW after annealing (compared with those for ion-removed) indicates that the nonradiative centers removed by RTA at 650℃ are mainly originated from ion damage. After annealing the PL blue shift for non ionremoved GaInNAs/GaAs SQW is much larger than those for InGaAs/GaAs and ion-removed GaInNAs/GaAs SQW. It is found that the larger PL blue shift of GaInNAs/GaAs SQW is due to the defect-assisted In-Ga interdiffusion rather than defect-assisted N-As interdiffusion.

  14. Structural properties of InN films grown on O-face ZnO(0001) by plasma-assisted molecular beam epitaxy

    Energy Technology Data Exchange (ETDEWEB)

    Cho, Yong Jin; Brandt, Oliver; Kaganer, Vladimir M.; Ramsteiner, Manfred; Riechert, Henning [Paul-Drude-Institut fuer Festkoerperelektronik, Hausvogteiplatz 5-7, 10117 Berlin (Germany); Korytov, Maxim; Albrecht, Martin [Leibniz-Institut fuer Kristallzuechtung, Max-Born-Str. 2, 12489 Berlin (Germany)

    2012-04-09

    We study the impact of substrate temperature and layer thickness on the morphological and structural properties of InN films directly grown on O-face ZnO(0001) substrates by plasma-assisted molecular beam epitaxy. With increasing substrate temperature, an interfacial reaction between InN and ZnO takes place that eventually results in the formation of cubic In{sub 2}O{sub 3} and voids. The properties of the InN films, however, are found to be unaffected by this reaction for substrate temperatures less than 550 deg. C. In fact, both the morphological and the structural quality of InN improve with increasing substrate temperature in the range from 350 to 500 deg. C. High quality films with low threading dislocation densities are demonstrated.

  15. Epitaxial growth of M-plane GaN on ZnO micro-rods by plasma-assisted molecular beam epitaxy

    Directory of Open Access Journals (Sweden)

    Shuo-Ting You

    2015-12-01

    Full Text Available We have studied the GaN grown on ZnO micro-rods by plasma-assisted molecular beam epitaxy. From the analyses of GaN microstructure grown on non-polar M-plane ZnO surface ( 10 1 ̄ 0 by scanning transmission electron microscope, we found that the ZnGa2O4 compound was formed at the M-plane hetero-interface, which was confirmed by polarization-dependent photoluminescence. We demonstrated that the M-plane ZnO micro-rod surface can be used as an alternative substrate to grow high quality M-plane GaN epi-layers.

  16. Formation behavior of Be{sub x}Zn{sub 1-x}O alloys grown by plasma-assisted molecular beam epitaxy

    Energy Technology Data Exchange (ETDEWEB)

    Chen, Mingming; Zhu, Yuan; Su, Longxing; Zhang, Quanlin; Chen, Anqi; Ji, Xu; Xiang, Rong; Gui, Xuchun; Wu, Tianzhun [State Key Laboratory of Optoelectronic Materials and Technologies, School of Physics and Engineering, Sun Yat-sen University, Guangzhou 510275 (China); Pan, Bicai [Department of Physics and Hefei National Laboratory for Physical Sciences at Microscale, University of Science and Technology of China, Hefei, Anhui 230026 (China); Tang, Zikang [State Key Laboratory of Optoelectronic Materials and Technologies, School of Physics and Engineering, Sun Yat-sen University, Guangzhou 510275 (China); Department of Physics, Hong Kong University of Science and Technology, Clear Water Bay, Kowloon, Hong Kong (China)

    2013-05-20

    We report the phase formation behavior of Be{sub x}Zn{sub 1-x}O alloys grown by plasma-assisted molecular beam epitaxy. We find the alloy with low- and high-Be contents could be obtained by alloying BeO into ZnO films. X-ray diffraction measurements shows the c lattice constant value shrinks, and room temperature absorption shows the energy band-gap widens after Be incorporated. However, the alloy with intermediate Be composition are unstable and segregated into low- and high-Be contents BeZnO alloys. We demonstrate the phase segregation of Be{sub x}Zn{sub 1-x}O alloys with intermediate Be composition resulted from large internal strain induced by large lattice mismatch between BeO and ZnO.

  17. Self-assembled flower-like nanostructures of InN and GaN grown by plasma-assisted molecular beam epitaxy

    Indian Academy of Sciences (India)

    Mahesh Kumar; T N Bhat; M K Rajpalke; B Roul; P Misra; L M Kukreja; Neeraj Sinha; A T Kalghatgi; S B Krupanidhi

    2010-06-01

    Nanosized hexagonal InN flower-like structures were fabricated by droplet epitaxy on GaN/Si(111) and GaN flower-like nanostructure fabricated directly on Si(111) substrate using radio frequency plasma-assisted molecular beam epitaxy. Powder X-ray diffraction (XRD) and scanning electron microscopy (SEM) were used to study the crystallinity and morphology of the nanostructures. Moreover, X-ray photoelectron spectroscopy (XPS) and photoluminescence (PL) were used to investigate the chemical compositions and optical properties of nano-flowers, respectively. Activation energy of free exciton transitions in GaN nano-flowers was derived to be ∼ 28.5 meV from the temperature dependent PL studies. The formation process of nanoflowers is investigated and a qualitative mechanism is proposed.

  18. Surface composition of BaTiO{sub 3}/SrTiO{sub 3}(001) films grown by atomic oxygen plasma assisted molecular beam epitaxy

    Energy Technology Data Exchange (ETDEWEB)

    Barbier, A.; Stanescu, D.; Jegou, P.; Magnan, H. [CEA, IRAMIS, SPCSI, F-91191 Gif-sur-Yvette (France); Mocuta, C. [Synchrotron SOLEIL, L' Orme des Merisiers Saint-Aubin, BP 48, F-91192 Gif-sur-Yvette Cedex (France); Jedrecy, N. [Institut des Nano Sciences de Paris, UPMC-Sorbonne Universites, CNRS-UMR7588, 75005 Paris (France)

    2012-12-01

    We have investigated the growth of BaTiO{sub 3} thin films deposited on pure and 1% Nb-doped SrTiO{sub 3}(001) single crystals using atomic oxygen assisted molecular beam epitaxy and dedicated Ba and Ti Knudsen cells. Thicknesses up to 30 nm were investigated for various layer compositions. We demonstrate 2D growth and epitaxial single crystalline BaTiO{sub 3} layers up to 10 nm before additional 3D features appear; lattice parameter relaxation occurs during the first few nanometers and is completed at {approx}10 nm. The presence of a Ba oxide rich top layer that probably favors 2D growth is evidenced for well crystallized layers. We show that the Ba oxide rich top layer can be removed by chemical etching. The present work stresses the importance of stoichiometry and surface composition of BaTiO{sub 3} layers, especially in view of their integration in devices.

  19. Effects of Ga ion irradiation on growth of GaN on SiN substrates by electron cyclotron resonance-assisted molecular beam epitaxy

    Energy Technology Data Exchange (ETDEWEB)

    Yanagisawa, J. [Graduate School of Engineering Science, Osaka University, 1-3 Machikaneyama-cho, Toyonaka, Osaka 560-8531 (Japan) and Center for Quantum Science and Technology under Extreme Conditions, Osaka University, 1-3 Machikaneyama-cho, Toyonaka, Osaka 560-8531 (Japan) and CREST-JST, Kawaguchi Center Building, 4-1-8, Honcho, Kawaguchi, Saitama 332-0012 (Japan)]. E-mail: yanagisawa@ee.es.osaka-u.ac.jp; Matsumoto, H. [Graduate School of Engineering Science, Osaka University, 1-3 Machikaneyama-cho, Toyonaka, Osaka 560-8531 (Japan); Fukuyama, T. [Department of Electronics, Information and Communication Engineering, Osaka Institute of Technology, 5-16-1 Omiya, Asahi-ku, Osaka 535-8585 (Japan); Shiraishi, Y. [Department of Electronics, Information and Communication Engineering, Osaka Institute of Technology, 5-16-1 Omiya, Asahi-ku, Osaka 535-8585 (Japan); Yodo, T. [Department of Electronics, Information and Communication Engineering, Osaka Institute of Technology, 5-16-1 Omiya, Asahi-ku, Osaka 535-8585 (Japan); Akasaka, Y. [Graduate School of Engineering Science, Osaka University, 1-3 Machikaneyama-cho, Toyonaka, Osaka 560-8531 (Japan)

    2007-04-15

    The possibility of forming GaN layers on Ga-implanted SiN surfaces was investigated using electron cyclotron resonance-assisted molecular beam epitaxy (MBE). It is found that the GaN layer initially formed on the SiN surface by Ga implantation at room temperature was amorphous-like, but become to polycrystalline after annealing at 650 deg. C for 3 min in vacuum. After the MBE growth of GaN, a grain structure of h-GaN was observed on the Ga-implanted SiN surface. The crystallinity of the GaN grown was, however, decreased upon increasing the Ga ion fluence on the SiN surface, which might be due, at least partly, to the formation of Ga clusters by the excess Ga implanted. The present results indicate the possibility of forming patterned GaN layers on SiN by selective Ga implantation on the SiN substrate, using a focused ion beam.

  20. Growth of ZnO(0001) on GaN(0001)/4H-SiC buffer layers by plasma-assisted hybrid molecular beam epitaxy

    Science.gov (United States)

    Adolph, David; Tingberg, Tobias; Ive, Tommy

    2015-09-01

    Plasma-assisted molecular beam epitaxy was used to grow ZnO(0001) layers on GaN(0001)/4H-SiC buffer layers deposited in the same growth chamber equipped with both N- and O-plasma sources. The GaN buffer layers were grown immediately before initiating the growth of ZnO. Using a substrate temperature of 445 °C and an O2 flow rate of 2.5 standard cubic centimeters per minute, we obtained ZnO layers with statistically smooth surfaces having a root-mean-square roughness of 0.3 nm and a peak-to-valley distance of 3 nm as revealed by atomic force microscopy. The full-width-at-half-maximum for x-ray rocking curves obtained across the ZnO(0002) and ZnO(10 1 bar 5) reflections was 198 and 948 arcsec, respectively. These values indicated that the mosaicity of the ZnO layer was comparable to the corresponding values of the underlying GaN buffer layer. Reciprocal space maps showed that the in-plane relaxation of the GaN and ZnO layers was 82% and 73%, respectively, and that the relaxation occurred abruptly during the growth. Room-temperature Hall-effect measurements revealed that the layers were inherently n-type and had an electron concentration of 1×1019 cm-3 and a Hall mobility of 51 cm2/V s.

  1. Blue and Green light InGaN/GaN Multiquantum-Well grown by plasma-assisted molecular beam epitaxy

    Science.gov (United States)

    Hu, Chia-Hsuan; Lo, Ikai; Shih, Cheng-Hung; Pang, Wen-Yuan; Tsai, Cheng-Da; Lin, Yu-Chiao

    2013-03-01

    High-efficiency red, green and blue light-emitting diodes (LEDs) can be used in the construction of full color display. We have grown green and blue light InGaN/GaN multiquantum-well (MQW) thin film on sapphire substrate with GaN buffer by using plasma-assisted molecular beam epitaxy. The optical properties of the samples were analyzed by photoluminescence measurement in room temperature. Under constant nitrogen flux condition, we obtained the blue and green emitting bands from different samples by modified the Indium and Gallium flux ratio in MQW. In high nitrogen flux condition, the wavelength shifts to 560nm, which provides an effective way to reach high Indium incorporation LED. In order to improve the quality, we can control the growth temperature and InGaN/GaN thickness. There are more than five order satellite peaks in Double Crystal X-ray Diffraction data. Smooth surface morphology has been verified in our samples by scanning electron microscope. This project is supported by National science council of Taiwan (NSC 101-2112-M-110-006-MY3).

  2. Comparison of the growth kinetics of In2O3 and Ga2O3 and their suboxide desorption during plasma-assisted molecular beam epitaxy

    Science.gov (United States)

    Vogt, Patrick; Bierwagen, Oliver

    2016-08-01

    We present a comprehensive study of the In2O3 growth kinetics during plasma-assisted molecular beam epitaxy and compare it to that of the related oxide Ga2O3 [P. Vogt and O. Bierwagen, Appl. Phys. Lett. 108, 072101 (2016)]. The growth rate and desorbing fluxes were measured during growth in-situ by a laser reflectometry set-up and line-of-sight quadrupole mass spectrometer, respectively. We extracted the In incorporation as a function of the provided In flux, different growth temperatures TG, and In-to-O flux ratios r. The data are discussed in terms of the competing formation of In2O3 and desorption of the suboxide In2O and O. The same three growth regimes as in the case of Ga2O3 can be distinguished: (i) In-transport limited, O-rich (ii) In2O-desorption limited, O-rich, and (iii) O-transport limited, In-rich. In regime (iii), In droplets are formed on the growth surface at low TG. The growth kinetics follows qualitatively that of Ga2O3 in agreement with their common oxide and suboxide stoichiometry. The quantitative differences are mainly rationalized by the difference in In2O and Ga2O desorption rates and vapor pressures. For the In2O, Ga2O, and O desorption, we extracted the activation energies and frequency factors by means of Arrhenius-plots.

  3. Lattice parameter accommodation between GaAs(111) nanowires and Si(111) substrate after growth via Au-assisted molecular beam epitaxy

    Science.gov (United States)

    Davydok, Anton; Breuer, Steffen; Biermanns, Andreas; Geelhaar, Lutz; Pietsch, Ullrich

    2012-02-01

    Using out-of-plane and in-plane X-ray diffraction techniques, we have investigated the structure at the interface between GaAs nanowires [NWs] grown by Au-assisted molecular beam epitaxy and the underlying Si(111) substrate. Comparing the diffraction pattern measured at samples grown for 5, 60, and 1,800 s, we find a plastic strain release of about 75% close to the NW-to-substrate interface even at the initial state of growth, probably caused by the formation of a dislocation network at the Si-to-GaAs interface. In detail, we deduce that during the initial stage, zinc-blende structure GaAs islands grow with a gradually increasing lattice parameter over a transition region of several 10 nm in the growth direction. In contrast, accommodation of the in-plane lattice parameter takes place within a thickness of about 10 nm. As a consequence, the ratio between out-of-plane and in-plane lattice parameters is smaller than the unity in the initial state of growth. Finally the wurtzite-type NWs grow on top of the islands and are free of strain.

  4. Strain relaxation in GaN/AlxGa1-xN superlattices grown by plasma-assisted molecular-beam epitaxy

    International Nuclear Information System (INIS)

    We have investigated the misfit relaxation process in GaN/AlxGa1-xN (x = 0.1, 0.3, 0.44) superlattices (SL) deposited by plasma-assisted molecular beam epitaxy. The SLs under consideration were designed to achieve intersubband absorption in the mid-infrared spectral range. We have considered the case of growth on GaN (tensile stress) and on AlGaN (compressive stress) buffer layers, both deposited on GaN-on-sapphire templates. Using GaN buffer layers, the SL remains almost pseudomorphic for x = 0.1, 0.3, with edge-type threading dislocation densities below 9 x 108 cm-2 to 2 x 109 cm-2. Increasing the Al mole fraction to 0.44, we observe an enhancement of misfit relaxation resulting in dislocation densities above 1010 cm-2. In the case of growth on AlGaN, strain relaxation is systematically stronger, with the corresponding increase in the dislocation density. In addition to the average relaxation trend of the SL, in situ measurements indicate a periodic fluctuation of the in-plane lattice parameter, which is explained by the different elastic response of the GaN and AlGaN surfaces to the Ga excess at the growth front. The results are compared with GaN/AlN SLs designed for near-infrared intersubband absorption.

  5. Photoluminescence of Ga-doped ZnO film grown on c-Al2O3 (0001) by plasma-assisted molecular beam epitaxy

    International Nuclear Information System (INIS)

    High quality gallium doped ZnO (Ga:ZnO) thin films were grown on c-Al2O3(1000) by plasma-assisted molecular beam epitaxy, and Ga concentration NGa was controlled in the range of 1x1018-2.5x1020/cm3 by adjusting/changing the Ga cell temperature. From the low-temperature photoluminescence at 10 K, the donor bound exciton I8 related to Ga impurity was clearly observed and confirmed by comparing the calculated activation energy of 16.8 meV of the emission peak intensity with the known localization energy, 16.1 meV. Observed asymmetric broadening with a long tail on the lower energy side in the photoluminescence (PL) emission line shape could be fitted by the Stark effect and the compensation ratio was approximately 14-17% at NGa≥1x1020/cm3. The measured broadening of photoluminescence PL emission is in good agreement with the total thermal broadening and potential fluctuations caused by random distribution of impurity at NGa lower than the Mott critical density

  6. Growth diagram of N-face GaN (0001{sup ¯}) grown at high rate by plasma-assisted molecular beam epitaxy

    Energy Technology Data Exchange (ETDEWEB)

    Okumura, Hironori, E-mail: okumura@engineering.ucsb.edu; McSkimming, Brian M.; Speck, James S. [Materials Department, University of California, Santa Barbara, California 93106 (United States); Huault, Thomas; Chaix, Catherine [RIBER S.A., 3a Rue Casimir Perier, BP 70083, 95873 Bezons Cedex (France)

    2014-01-06

    N-face GaN was grown on free-standing GaN (0001{sup ¯}) substrates at a growth rate of 1.5 μm/h using plasma-assisted molecular beam epitaxy. Difference in growth rate between (0001{sup ¯}) and (0001) oriented GaN depends on nitrogen plasma power, and the (0001{sup ¯}) oriented GaN had only 70% of the growth rate of the (0001) oriented GaN at 300 W. Unintentional impurity concentrations of silicon, carbon, and oxygen were 2 × 10{sup 15}, 2 × 10{sup 16}, and 7 × 10{sup 16} cm{sup −3}, respectively. A growth diagram was constructed that shows the dependence of the growth modes on the difference in the Ga and active nitrogen flux, Φ{sub Ga} − Φ{sub N*}, and the growth temperature. At high Φ{sub Ga} − Φ{sub N*} (Φ{sub Ga} ≫ Φ{sub N*}), two-dimensional (step-flow and layer-by-layer) growth modes were realized. High growth temperature (780 °C) expanded the growth window of the two-dimensional growth modes, achieving a surface with rms roughness of 0.48 nm without Ga droplets.

  7. Properties of InSbN grown on GaAs by radio frequency nitrogen plasma-assisted molecular beam epitaxy

    International Nuclear Information System (INIS)

    We report the growth of InSbN on a lattice-mismatched GaAs substrate using radio frequency nitrogen plasma-assisted molecular beam epitaxy. The effects of a two-step thin InSb buffer layer grown at 330 and 380 deg. C and substrate temperature (270-380 deg. C) on the properties of the InSbN are studied. The crystalline quality of the InSbN is significantly improved by the two-step buffer layer due to defect suppression. The shifting in the absorption edge of the InSbN from ∼5 to 8 μm following an increase in the substrate temperature is correlated with the reduction in free carrier concentration from ∼1018 to 1016 cm-3 and increase in concentration of N substituting Sb from ∼0.2 to 1%. These results will be beneficial to those working on the pseudo-monolithic integration of InSbN detectors on a GaAs platform.

  8. Effects of growth temperature on high-quality In0.2Ga0.8N layers by plasma-assisted molecular beam epitaxy

    Institute of Scientific and Technical Information of China (English)

    Zhang Dongyan; Zheng Xinhe; Li Xuefei; Wu Yuanyuan; Wang Jianfeng; Yang Hui

    2012-01-01

    High-quality In0.2Ga0.8N epilayers were grown on a GaN template at temperatures of 520 and 580 ℃ via plasma-assisted molecular beam epitaxy.The X-ray rocking curve full widths at half maximum (FWHM) of (10.2)reflections is 936 arcsec for the 50-nm-thick InGaN layers at the lower temperature.When the growth temperature increases to 580 ℃,the FWHM of (00.2) reflections for these samples is very narrow and keeps similar,while significant improvement of(10.2) reflections with an FWHM value of 612 arcsec has been observed.This improved quality in InGaN layers grown at 580 ℃ is also reflected by the much larger size of the crystalline column from the AFM results,stronger emission intensity as well as a decreased FWHM of room temperature PL from 136 to 93.9 meV.

  9. Effects of RF plasma parameters on the growth of InGaN/GaN heterostructures using plasma-assisted molecular beam epitaxy

    CERN Document Server

    Shim Kyu Ha; Kim, K H; Hong, S U; Cho, K I; Lee, H G; Kim, J

    1999-01-01

    The effects of rf plasma power on the structural/optical properties of GaN-based nitride epilayers grown by plasma-assisted molecular beam epitaxy have been investigated. Atomic force microscopy and high-resolution x-ray diffraction analyses revealed that the sharp interface of In sub 0 sub . sub 2 Ga sub 0 sub . sub 8 N/GaN heterostructures could be obtained by suppressing the surface roughening at high rf power. photoluminescence data suggest that the formation of damaged subsurface due to energetic particles was alleviated in the InGaN growth in comparison with the GaN growth. In our experimental set-up, the rf power of 400 W appeared to properly suppress the 3D island formation without causing defects at the subsurface of In sub 0 sub . sub 2 Ga sub 0 sub . sub 8 N. The phenomena associated with the indium incorporation could be explained by an inequality with two kinetic processes of the surface diffusion and the plasma stimulated desorption.

  10. Reaction kinetics and growth window for plasma-assisted molecular beam epitaxy of Ga2O3: Incorporation of Ga vs. Ga2O desorption

    Science.gov (United States)

    Vogt, Patrick; Bierwagen, Oliver

    2016-02-01

    A detailed study of the reaction kinetics of the plasma-assisted molecular beam epitaxy (MBE) growth of the n-type semiconducting oxide Ga2O3 is presented. The growth rate as a function of gallium flux is measured in situ by laser reflectometry at different growth temperatures (TG) and gallium-to-oxygen ratios (rGa). The flux of the suboxide Ga2O desorbed off the growth surface is identified in situ by line-of-sight quadrupole mass spectroscopy. The measurements reveal the influence of TG and rGa on the competing formation of Ga2O3 and desorption of Ga2O resulting in three different growth regimes: (i) Ga transport limited, (ii) Ga2O desorption limited, and (iii) O transport limited. As a result, we present a growth diagram of gallium oxide. This diagram illustrates the regimes of complete, partial, and no Ga incorporation as a function of TG and rGa, and thus provides guidance for the MBE growth of Ga2O3.

  11. Nitridation effects of Si(1 1 1) substrate surface on InN nanorods grown by plasma-assisted molecular beam epitaxy

    Energy Technology Data Exchange (ETDEWEB)

    Feng, Shan [Faculty of Materials Science and Chemistry, China University of Geosciences, Wuhan 430074 (China); Tan, Jin, E-mail: jintan_cug@163.com [Faculty of Materials Science and Chemistry, China University of Geosciences, Wuhan 430074 (China); Engineering Research Center of Nano-Geomaterials of Ministry of Education, China University of Geosciences, Wuhan 430074 (China); Li, Bin; Song, Hao; Wu, Zhengbo; Chen, Xin [Faculty of Materials Science and Chemistry, China University of Geosciences, Wuhan 430074 (China)

    2015-02-05

    Graphical abstract: The morphology evolution of InN nanorods in samples (g)–(i). The alignment of InN nanorods is improved and the deviation angle distribution narrows down with increase in nitriding time. It suggests that extending the nitriding time can enhance the vertical orientation of InN nanorods. - Highlights: • InN nanorods were grown on surface nitrided Si(1 1 1) substrate using PAMBE system. • Nitridation of substrate surface has a strong effect on morphology of InN nanorods. • InN nanorods cannot be formed with 1 min nitridation of Si(1 1 1) substrate. • Increasing nitriding time will increase optimum growth temperature of InN nanorods. • Increasing nitriding time can enhance vertical orientation of InN nanorods. - Abstract: The InN nanorods were grown on Si(1 1 1) substrate by plasma-assisted molecular beam epitaxy (PAMBE) system, with a substrate nitridation process. The effect of nitriding time of Si(1 1 1) substrate on morphology, orientation and growth temperature of InN nanorods was characterized via scanning electron microscopy (SEM) and X-ray diffraction (XRD). The deviation angle of InN nanorods was measured to evaluate the alignment of arrays. The results showed that InN nanorods could not be formed with 1 min nitridation of Si(1 1 1) substrate, but they could be obtained again when the nitriding time was increased to more than 10 min. In order to get aligned InN nanorods, the growth temperature needed to increase with longer nitriding time. The vertical orientation of InN nanorods could be enhanced with increase in nitriding time. The influence of the substrate nitridation on the photoluminescence (PL) spectra of InN nanorods has been investigated.

  12. Plasma-assisted molecular beam epitaxy of strain-compensated a-plane InGaN/AlGaN superlattices

    International Nuclear Information System (INIS)

    Strain-compensated InGaN/AlGaN structures can enable the growth of thick layers of InGaN epitaxial films far beyond the critical thickness for InGaN grown pseudomorphically to GaN. In this paper, we demonstrate the epitaxial growth of high-quality strain-compensated a-plane In0.12Ga0.88N/Al0.19Ga0.81N superlattices up to 5 times thicker than the critical thickness on free-standing a-plane GaN substrates by plasma-assisted molecular beam epitaxy (PA-MBE). The superlattices consist of 50 to 200 periods of 10 nm thick In0.12Ga0.88N and 6 nm thick Al0.19Ga0.81N layers. The structures are characterized using a double crystal X-ray diffractometer, asymmetric reciprocal space mapping, and atomic force microscopy. We use X-ray diffraction to determine the strain, composition, degree of relaxation, and superlattice period of our samples. The structural characteristics of periodic structures containing from 50 to 200 periods are compared to single layer, uncompensated In0.12Ga0.88N films. A 100 period structure exhibited only 15% relaxation compared to 69% relaxation for the bulk In0.12Ga0.88N film grown with the same total InGaN thickness but without strain-compensating layers. (copyright 2015 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  13. Bandgap measurements and the peculiar splitting of E2H phonon modes of InxAl1-xN nanowires grown by plasma assisted molecular beam epitaxy

    KAUST Repository

    Tangi, Malleswararao

    2016-07-26

    The dislocation free Inx Al 1-xN nanowires (NWs) are grown on Si(111) by nitrogen plasma assisted molecular beam epitaxy in the temperature regime of 490 °C–610 °C yielding In composition ranges over 0.50 ≤ x ≤ 0.17. We study the optical properties of these NWs by spectroscopic ellipsometry (SE), photoluminescence, and Raman spectroscopies since they possesses minimal strain with reduced defects comparative to the planar films. The optical bandgap measurements of Inx Al 1-xN NWs are demonstrated by SE where the absorption edges of the NW samples are evaluated irrespective of substrate transparency. A systematic Stoke shift of 0.04–0.27 eV with increasing x was observed when comparing the micro-photoluminescence spectra with the Tauc plot derived from SE. The micro-Raman spectra in the NWs with x = 0.5 showed two-mode behavior for A1(LO) phonons and single mode behavior for E2 H phonons. As for x = 0.17, i.e., high Al content, we observed a peculiar E2 H phonon mode splitting. Further, we observe composition dependent frequency shifts. The 77 to 600 K micro-Raman spectroscopy measurements show that both AlN- and InN-like modes of A1(LO) and E2 H phonons in Inx Al 1-xN NWs are redshifted with increasing temperature, similar to that of the binary III group nitride semiconductors. These studies of the optical properties of the technologically important Inx Al 1-xN nanowires will path the way towards lasers and light-emitting diodes in the wavelength of the ultra-violet and visible range.

  14. Effects of gallium doping on properties of a-plane ZnO films on r-plane sapphire substrates by plasma-assisted molecular beam epitaxy

    International Nuclear Information System (INIS)

    The authors report on the structural, optical, and electrical properties of Ga-doped a-plane (1120) ZnO films grown by plasma-assisted molecular beam epitaxy. Ga doping level was controlled by changing the Ga cell temperatures from 350 to 470 deg. C with an interval of 30 deg. C. With up to Ga cell temperatures of 440 deg. C, single crystalline Ga-doped a-plane ZnO films were grown; however, the sample with a Ga cell temperature of 470 deg. C showed polycrystalline features. The typical striated surface morphology normally observed from undoped ZnO films disappeared with Ga doping. ZnO films doped with Ga cell temperatures up to 440 deg. C did not show a significant change in full width at half maximum (FWHM) values of (1120) x-ray rocking curves by doping. The smallest FWHM values were 0.433 deg. (φ=90 deg.) and 0.522 deg. (φ=0 deg. ) for the sample with a Ga cell temperature of 350 deg. C. The polycrystalline ZnO film with excessive Ga doping at the Ga cell temperature of 470 deg. C showed significantly increased FWHM values. Hall measurements at room temperature (RT) revealed that electron concentration began to be saturated at the Ga cell temperature of 440 deg. C and electron mobility was drastically reduced at the Ga cell temperature of 470 deg. C. The carrier concentration of Ga-doped ZnO films were controlled from 7.2x1018 to 3.6x1020 cm-3. Anisotropic electrical properties (carrier concentration and Hall mobility) were observed in measurements by the van der Pauw method depending on the direction (c- or m-direction) for the undoped sample but not observed for the doped samples. RT photoluminescence (PL) spectra from the Ga-doped single crystalline ZnO films showed dominant near band edge (NBE) emissions with negligibly deep level emission. The NBE intensity in PL spectra increases with Ga doping.

  15. Growth and characterization of lattice-matched InAlN/GaN Bragg reflectors grown by plasma-assisted Molecular Beam Epitaxy

    OpenAIRE

    Gacevic, Zarko; Fernández-Garrido, Sergio; Calleja Pardo, Enrique; Luna García de la Infanta, Esperanza; Trampert, Achim

    2009-01-01

    We demonstrate six to ten period lattice-matched In(0.18) Al(0.82) N/GaN distributed Bragg reflectors with peak reflectivity centred around 400 nm, grown by molecular beam epitaxy. Thanks to the well-tuned ternary alloy composition crack-free layers have been obtained as confirmed by both optical and scanning electron microscopy. In addition, crosssectional analysis by high resolution transmission electron microscopy reveals highly periodic structure with abrupt interfaces. When the number of...

  16. Photoionization studies with molecular beams

    International Nuclear Information System (INIS)

    A molecular beam photoionization apparatus which combines the advantages of both the molecular beam method with photoionization mass spectrometry has been designed and constructed for carrying out some unique photoionization experiments. Rotational cooling during the supersonic expansion has resulted in high resolution photoionization efficiency curves for NO, ICl, C2H2 and CH3I. The analysis of these spectra has yielded ionization potentials for these molecules to an accuracy of +- 3 MeV. Detailed autoionization structures were also resolved. This allows the investigation of the selection rules for autoionization, and the identification of the Rydberg series which converge to the excited states of the molecular ions. The degree of relaxation for thermally populated excited states has been examined using NO and ICl as examples. As a result of adiabatic cooling, a small percentage of dimers is also formed during the expansion. The photoionization efficiency curves for (NO)2, ArICl, Ar2, Kr2 and Xe2 have been obtained near the thresholds. Using the known dissociation energies of the (NO)2, Ar2, Kr2 and Xe2 van der Waals molecules, the corresponding dissociation energies for NO-NO+, Ar2+, Kr2+, and Xe2+ have been determined. The ionization mechanisms for this class of molecules are examined and discussed

  17. Photodissociation processes in molecular beams

    International Nuclear Information System (INIS)

    A description is presented of a study of the photodissociation dynamics of molecules in a molecular beam. Photo-fragmentation translational spectroscopy has been utilized to observe the photodissociation dynamics of ozone. Using a supersonic molecular beam and a 10 nanosecond pulsed laser at lambda = 266 nm, the velocities of the fragment products are measured by the method of time of flight. The resolution of the time of flight spectrum of ozone is sufficiently high that the electronic and vibrational states are clearly resolved and identified. Above the threshold (lambda 1D) has been estimated in the past to be unity for the process O3 (1A1) + hν)lambda 3(1B2) → O2(1Δ/sub g/) + O(1D). However a small production of O2 (3Σ/sub g/-) + O(3P) has been observed in this study. The O2(1Δ/sub g/) product yields four vibrational states (v = 0, 1, 2, 3) which yields a vibrational temperature of 27000K along with narrow energy distributions of rotational levels. These energy distributions are compared with photodissociation models along with the polarization dependence of the dissociative process which was also measured. 143 references

  18. AlN/GaN double-barrier resonant tunneling diodes grown by rf-plasma-assisted molecular-beam epitaxy

    International Nuclear Information System (INIS)

    AlN/GaN double-barrier resonant tunneling diodes (DB-RTDs) were fabricated on (0001) Al2O3 substrates by molecular-beam epitaxy, using a rf-plasma nitrogen source. The AlN/GaN DB-RTDs were designed to have a 3-ML-thick GaN quantum well and 4-ML-thick AlN barrier layers sandwiched by Si-doped n-type GaN contact layers. The current-voltage characteristics of mesa diode samples showed clear negative differential resistance (NDR) at room temperature. The NDR was observed at 2.4 V with a peak current of 2.9 mA, which corresponds to 180 A/cm2. A peak-to-valley current ratio as high as 32 was obtained

  19. 14th international symposium on molecular beams

    Energy Technology Data Exchange (ETDEWEB)

    1992-01-01

    This report discusses research being conducted with molecular beams. The general topic areas are as follows: Clusters I; reaction dynamics; atomic and molecular spectroscopy; clusters II; new techniques; photodissociation dynamics; and surfaces.

  20. 14th international symposium on molecular beams

    Energy Technology Data Exchange (ETDEWEB)

    1992-09-01

    This report discusses research being conducted with molecular beams. The general topic areas are as follows: Clusters I; reaction dynamics; atomic and molecular spectroscopy; clusters II; new techniques; photodissociation & dynamics; and surfaces.

  1. 14th international symposium on molecular beams

    International Nuclear Information System (INIS)

    This report discusses research being conducted with molecular beams. The general topic areas are as follows: Clusters I; reaction dynamics; atomic and molecular spectroscopy; clusters II; new techniques; photodissociation ampersand dynamics; and surfaces

  2. Metal assisted focused-ion beam nanopatterning

    Science.gov (United States)

    Kannegulla, Akash; Cheng, Li-Jing

    2016-09-01

    Focused-ion beam milling is a versatile technique for maskless nanofabrication. However, the nonuniform ion beam profile and material redeposition tend to disfigure the surface morphology near the milling areas and degrade the fidelity of nanoscale pattern transfer, limiting the applicability of the technique. The ion-beam induced damage can deteriorate the performance of photonic devices and hinders the precision of template fabrication for nanoimprint lithography. To solve the issue, we present a metal assisted focused-ion beam (MAFIB) process in which a removable sacrificial aluminum layer is utilized to protect the working material. The new technique ensures smooth surfaces and fine milling edges; in addition, it permits direct formation of v-shaped grooves with tunable angles on dielectric substrates or metal films, silver for instance, which are rarely achieved by using traditional nanolithography followed by anisotropic etching processes. MAFIB was successfully demonstrated to directly create nanopatterns on different types of substrates with high fidelity and reproducibility. The technique provides the capability and flexibility necessary to fabricate nanophotonic devices and nanoimprint templates.

  3. Metal assisted focused-ion beam nanopatterning.

    Science.gov (United States)

    Kannegulla, Akash; Cheng, Li-Jing

    2016-09-01

    Focused-ion beam milling is a versatile technique for maskless nanofabrication. However, the nonuniform ion beam profile and material redeposition tend to disfigure the surface morphology near the milling areas and degrade the fidelity of nanoscale pattern transfer, limiting the applicability of the technique. The ion-beam induced damage can deteriorate the performance of photonic devices and hinders the precision of template fabrication for nanoimprint lithography. To solve the issue, we present a metal assisted focused-ion beam (MAFIB) process in which a removable sacrificial aluminum layer is utilized to protect the working material. The new technique ensures smooth surfaces and fine milling edges; in addition, it permits direct formation of v-shaped grooves with tunable angles on dielectric substrates or metal films, silver for instance, which are rarely achieved by using traditional nanolithography followed by anisotropic etching processes. MAFIB was successfully demonstrated to directly create nanopatterns on different types of substrates with high fidelity and reproducibility. The technique provides the capability and flexibility necessary to fabricate nanophotonic devices and nanoimprint templates. PMID:27479713

  4. Lifetime obtained by ion beam assisted deposition

    International Nuclear Information System (INIS)

    We have fabricated green organic light-emitting diodes based on tris-(8-hydroxyquinoline)aluminium (Alq3) thin films. In order to favor the charge carriers transport from the anode, we have deposited a N,N'-diphenyl-N,N'-bis (3-methylphenyl)-1,1'-diphenyl-4,4'-diamine (TPD) layer (hole transport layer) on a ITO anode. Cathode is obtained with a calcium layer covered with a silver layer. This silver layer is used to protect the other layers against oxygen during the OLED use. All the depositions are performed under vacuum and the devices are not exposed to air during their realisation. In order to improve the silver layer characteristics, we have realized this layer with the ion beam assisted deposition process. The aim of this process is to densify the layer and then reduce the permeation of H2O and O2. We have used argon ions to assist the silver deposition. All the OLEDs optoelectronic characterizations (I = f(V), L = f(V)) are performed in the ambient air. We compare the results obtained with the assisted layer with those obtained with a classical cathode realized by thermal unassisted evaporation. We have realized lifetime measurements in the ambient air and we discuss about the assisted layer influence on the OLEDs performances

  5. High-Temperature Characteristics of GaInNAs/GaAs Single-Quantum-Well Lasers Grown by Plasma-Assisted Molecular Beam Epitaxy

    Institute of Scientific and Technical Information of China (English)

    PAN Zhong; LI Lian-He; DU Yun; LIN Yao-Wang; WU Rong-Han

    2001-01-01

    GaInNAs/GaAs single-quantum-well (SQW) lasers have been grown by solid-source molecular beam epitaxy. N is introduced by a home-made dc-active plasma source. Incorporation of N into InGaAs decreases the bandgap significantly. The highest N concentration of 2.6% in a GalnNAs/GaAs QW is obtained, corresponding to the photoluminescence (PL) peak wavelength of 1.57μm at 10 K. The PL peak intensity decreases rapidly and the PL full width at half maximum increases with the increasing N concentrations. Rapid thermal annealing at 850°C could significantly improve the crystal quality of the QWs. An optimum annealing time of 5s at 850°C was obtained. The GaInNAs/GaAs SQW laser emitting at 1.2μm exhibits a high characteristic temperature of 115 K in the temperature range of 20° C- 75° C.

  6. Elimination of columnar microstructure in N-face InAlN, lattice-matched to GaN, grown by plasma-assisted molecular beam epitaxy in the N-rich regime

    Energy Technology Data Exchange (ETDEWEB)

    Ahmadi, Elaheh; Wienecke, Steven; Keller, Stacia; Mishra, Umesh K. [Department of Electrical and Computer Engineering, University of California, Santa Barbara, California 93106 (United States); Shivaraman, Ravi; Wu, Feng; Kaun, Stephen W.; Speck, James S. [Materials Department, University of California, Santa Barbara, California 93106 (United States)

    2014-02-17

    The microstructure of N-face InAlN layers, lattice-matched to GaN, was investigated by scanning transmission electron microscopy and atom probe tomography. These layers were grown by plasma-assisted molecular beam epitaxy (PAMBE) in the N-rich regime. Microstructural analysis shows an absence of the lateral composition modulation that was previously observed in InAlN films grown by PAMBE. A room temperature two-dimensional electron gas (2DEG) mobility of 1100 cm{sup 2}/V s and 2DEG sheet charge density of 1.9 × 10{sup 13} cm{sup −2} was measured for N-face GaN/AlN/GaN/InAlN high-electron-mobility transistors with lattice-matched InAlN back barriers.

  7. Cold and Slow Molecular Beam

    OpenAIRE

    Rasmussen, Julia; Patterson, Dave; Lu, Hsin-I; Wright, Matthew; Doyle, John M.

    2011-01-01

    Employing a two-stage cryogenic buffer gas cell, we produce a cold, hydrodynamically extracted beam of calcium monohydride molecules with a near effusive velocity distribution. Beam dynamics, thermalization and slowing are studied using laser spectroscopy. The key to this hybrid, effusive-like beam source is a “slowing cell” placed immediately after a hydrodynamic, cryogenic source [Patterson et al., J. Chem. Phys., 2007, 126, 154307]. The resulting CaH beams are created in two regimes. In on...

  8. Cold and Slow Molecular Beam

    CERN Document Server

    Lu, Hsin-I; Wright, Matthew J; Patterson, Dave; Doyle, John M

    2011-01-01

    Employing a two-stage cryogenic buffer gas cell, we produce a cold, hydrodynamically extracted beam of calcium monohydride molecules with a near effusive velocity distribution. Beam dynamics, thermalization and slowing are studied using laser spectroscopy. The key to this hybrid, effusive-like beam source is a "slowing cell" placed immediately after a hydrodynamic, cryogenic source [Patterson et al., J. Chem. Phys., 2007, 126, 154307]. The resulting CaH beams are created in two regimes. One modestly boosted beam has a forward velocity of vf = 65 m/s, a narrow velocity spread, and a flux of 10^9 molecules per pulse. The other has the slowest forward velocity of vf = 40 m/s, a longitudinal temperature of 3.6 K, and a flux of 5x10^8 molecules per pulse.

  9. Molecular beam epitaxy a short history

    CERN Document Server

    Orton, J W

    2015-01-01

    This volume describes the development of molecular beam epitaxy from its origins in the 1960s through to the present day. It begins with a short historical account of other methods of crystal growth, both bulk and epitaxial, to set the subject in context, emphasising the wide range of semiconductor materials employed. This is followed by an introduction to molecular beams and their use in the Stern-Gerlach experiment and the development of the microwave MASER.

  10. Effects of growth temperature on the structural and the optical properties of ZnO thin films on porous silicon grown by using plasma-assisted molecular beam epitaxy

    Energy Technology Data Exchange (ETDEWEB)

    Kim, Min Su; Kim, Soa Ram; Yim, Kwang Gug; Leem, Jae Young; Nam, Gi Woong [Inje University, Gimhae (Korea, Republic of); Kim, Do Yeob [Clemson University, Clemson, South Carolina (United States); Lee, Dong Yul [Samsung Electronics Co. Ltd., Yongin (Korea, Republic of); Kim, Jin Soo [Chonbuk National University, Jeonju (Korea, Republic of); Kim, Jong Su [Yeungnam University, Gyeongsan (Korea, Republic of); Son, Jeong Sik [Kyungwoon University, Gumi (Korea, Republic of)

    2012-05-15

    Zinc oxide (ZnO) thin films were grown on Si and porous silicon (PS) at different growth temperatures in the range from 150 to 550 .deg. C by using plasma-assisted molecular beam epitaxy (PA-MBE). The effects of PS and growth temperature on the structural and the optical properties of the ZnO thin films were investigated by using atomic force microscopy (AFM), scanning electron microscopy (SEM), X-ray diffraction (XRD), and photoluminescence (PL). A higher intensity and a narrower full width at half maximum (FWHM) of the ZnO (002) diffraction peak were observed from the ZnO thin films grown on PS, indicating improved crystal quality. For the ZnO thin films grown on Si, the optical properties were gradually enhanced as the growth temperature was increased. However, the structural and the optical properties of the ZnO thin films grown on PS exhibited the largest improvement at a growth temperature of 350 .deg. C. The structural and the optical properties of the ZnO thin films, compared with the ZnO thin films grown on Si, were improved by introducing PS, and the optimum growth temperature was decreased.

  11. Growth of c-plane ZnO on γ-LiAlO{sub 2} (1 0 0) substrate with a GaN buffer layer by plasma assisted molecular beam epitaxy

    Energy Technology Data Exchange (ETDEWEB)

    Yan, T. [Department of Materials and Optoelectronic Science/Center for Nanoscience and Nanotechnology, National Sun Yat-Sen University, Kaohsiung 80424, Taiwan, ROC (China); Key Laboratory of Optoelectronic Materials Chemistry and Physics, Fujian Institute of Research on the Structure of Matter, Chinese Academy of Sciences, Fuzhou, Fujian, 350002 (China); Lu, C.-Y.J. [Department of Materials and Optoelectronic Science/Center for Nanoscience and Nanotechnology, National Sun Yat-Sen University, Kaohsiung 80424, Taiwan, ROC (China); Schuber, R. [Institute of Applied Physics/DFG-Center for Functional Nanostructures (CFN), Karlsruhe Institute of Technology, DE-76131 Karlsruhe (Germany); Chang, L., E-mail: lwchang@mail.nsysu.edu.tw [Department of Materials and Optoelectronic Science/Center for Nanoscience and Nanotechnology, National Sun Yat-Sen University, Kaohsiung 80424, Taiwan, ROC (China); Schaadt, D.M. [Institute of Applied Physics/DFG-Center for Functional Nanostructures (CFN), Karlsruhe Institute of Technology, DE-76131 Karlsruhe (Germany); Institute of Energy Research and Phyiscal Technologies, Clausthal Technical University, Am Stollen 19B, D-38640 Goslar (Germany); Chou, M.M.C.; Ploog, K.H. [Department of Materials and Optoelectronic Science/Center for Nanoscience and Nanotechnology, National Sun Yat-Sen University, Kaohsiung 80424, Taiwan, ROC (China); Chiang, C.-M. [Department of Chemistry, National Sun Yat-Sen University, Kaohsiung 80424, Taiwan, ROC (China)

    2015-10-01

    Highlights: • ZnO epilayers were grown on LiAlO{sub 2} (1 0 0) substrate with a GaN buffer layer by MBE. • A high Zn/O flux ratio is beneficial for reducing the density of screw dislocations. • Reciprocal space maps demonstrate that the misfit strain in ZnO has been relaxed. • No interfacial layer is formed at ZnO/GaN interface using a Zn pre-exposure strategy. - Abstract: C-plane ZnO epilayers were grown on LiAlO{sub 2} (1 0 0) substrate with a GaN buffer layer by plasma assisted molecular beam epitaxy. Both the X-ray rocking curves and the transmission electron microscopy analyses indicate that the ZnO epilayers exhibit a lower threading dislocation density (∼1 × 10{sup 10} cm{sup −2}) as compared to those grown on LiAlO{sub 2} substrate without the buffer layer. A high Zn/O flux ratio is beneficial for reducing the density of screw-type dislocations. Reciprocal space maps demonstrate that the misfit strain has been relaxed. No interfacial layer is formed at the ZnO/GaN interface by using a Zn pre-exposure strategy. The ZnO epilayers exhibit a strong near band edge emission at 3.28 eV at room temperature with a negligible green band emission.

  12. Plasma assisted molecular beam epitaxy growth and effect of varying buffer thickness on the formation of ultra-thin In0.17Al0.83N/GaN heterostructure on Si(111)

    International Nuclear Information System (INIS)

    This work reports on the detailed plasma-assisted molecular beam epitaxy (PAMBE) growth of ultra-thin In0.17Al0.83N/GaN heterostructures on Si(111) substrate with three different buffer thickness (600 nm, 400 nm, and 200 nm). Growth through critical optimization of growth conditions is followed by the investigation of impact of varying buffer thickness on the formation of ultra-thin 1.5 nm, In0.17Al0.83N–1.25 nm, GaN–1.5 nm, In0.17Al0.83N heterostructure, in terms of threading dislocation (TD) density. Analysis reveals a drastic reduction of TD density from the order 1010 cm−2 to 108 cm−2 with increasing buffer thickness resulting smooth ultra-thin active region for thick buffer structure. Increasing strain with decreasing buffer thickness is studied through reciprocal space mapping analysis. Surface morphology through atomic force microscopy analysis also supports our study by observing an increase of pits and root mean square value (0.89 nm, 1.2 nm, and 1.45 nm) with decreasing buffer thickness which are resulted due to the internal strain and TDs

  13. Growth of c-plane ZnO on γ-LiAlO2 (1 0 0) substrate with a GaN buffer layer by plasma assisted molecular beam epitaxy

    International Nuclear Information System (INIS)

    Highlights: • ZnO epilayers were grown on LiAlO2 (1 0 0) substrate with a GaN buffer layer by MBE. • A high Zn/O flux ratio is beneficial for reducing the density of screw dislocations. • Reciprocal space maps demonstrate that the misfit strain in ZnO has been relaxed. • No interfacial layer is formed at ZnO/GaN interface using a Zn pre-exposure strategy. - Abstract: C-plane ZnO epilayers were grown on LiAlO2 (1 0 0) substrate with a GaN buffer layer by plasma assisted molecular beam epitaxy. Both the X-ray rocking curves and the transmission electron microscopy analyses indicate that the ZnO epilayers exhibit a lower threading dislocation density (∼1 × 1010 cm−2) as compared to those grown on LiAlO2 substrate without the buffer layer. A high Zn/O flux ratio is beneficial for reducing the density of screw-type dislocations. Reciprocal space maps demonstrate that the misfit strain has been relaxed. No interfacial layer is formed at the ZnO/GaN interface by using a Zn pre-exposure strategy. The ZnO epilayers exhibit a strong near band edge emission at 3.28 eV at room temperature with a negligible green band emission

  14. Influences of residual oxygen impurities, cubic indium oxide grains and indium oxy-nitride alloy grains in hexagonal InN crystalline films grown on Si(111) substrates by electron cyclotron resonance plasma-assisted molecular beam epitaxy

    Energy Technology Data Exchange (ETDEWEB)

    Yodo, T.; Nakamura, T.; Kouyama, T. [Department of Electronics, Information and Communication Engineering, Osaka Institute of Technology, 5-16-1 Asahi-ku, Ohmiya, Osaka 535-8585 (Japan); Harada, Y. [Applied Physics, Osaka Institute of Technology, 5-16-1, Asahi-ku, Ohmiya, Osaka 535-8585 (Japan)

    2005-05-01

    We investigated the influences of residual oxygen (O) impurities, cubic indium oxide ({beta}-In{sub 2}O{sub 3}) grains and indium oxy-nitride (InON) alloy grains in 200 nm-thick hexagonal ({alpha})-InN crystalline films grown on Si(111) substrates by electron cyclotron resonance plasma-assisted molecular beam epitaxy. Although {beta}-In{sub 2}O{sub 3} grains with wide band-gap energy were formed in In film by N{sub 2} annealing, they were not easily formed in N{sub 2}-annealed InN films. Even if they were not detected in N{sub 2}-annealed InN films, the as-grown films still contained residual O impurities with concentrations of less than 0.5% ([O]{<=}0.5%). Although [O]{proportional_to}1% could be estimated by investigating In{sub 2}O{sub 3} grains formed in N{sub 2}-annealed InN films, [O]{<=}0.5% could not be measured by it. However, we found that they can be qualitatively measured by investigating In{sub 2}O{sub 3} grains formed by H{sub 2} annealing with higher reactivity with InN and O{sub 2}, using X-ray diffraction and PL spectroscopy. In this paper, we discuss the formation mechanism of InON alloy grains in InN films. (copyright 2005 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  15. Control of ion content and nitrogen species using a mixed chemistry plasma for GaN grown at extremely high growth rates >9 μm/h by plasma-assisted molecular beam epitaxy

    Energy Technology Data Exchange (ETDEWEB)

    Gunning, Brendan P.; Clinton, Evan A.; Merola, Joseph J.; Doolittle, W. Alan, E-mail: alan.doolittle@ece.gatech.edu [Georgia Institute of Technology, Atlanta, Georgia 30332 (United States); Bresnahan, Rich C. [Veeco Instruments, St. Paul, Minnesota 55127 (United States)

    2015-10-21

    Utilizing a modified nitrogen plasma source, plasma assisted molecular beam epitaxy (PAMBE) has been used to achieve higher growth rates in GaN. A higher conductance aperture plate, combined with higher nitrogen flow and added pumping capacity, resulted in dramatically increased growth rates up to 8.4 μm/h using 34 sccm of N{sub 2} while still maintaining acceptably low operating pressure. It was further discovered that argon could be added to the plasma gas to enhance growth rates up to 9.8 μm/h, which was achieved using 20 sccm of N{sub 2} and 7.7 sccm Ar flows at 600 W radio frequency power, for which the standard deviation of thickness was just 2% over a full 2 in. diameter wafer. A remote Langmuir style probe employing the flux gauge was used to indirectly measure the relative ion content in the plasma. The use of argon dilution at low plasma pressures resulted in a dramatic reduction of the plasma ion current by more than half, while high plasma pressures suppressed ion content regardless of plasma gas chemistry. Moreover, different trends are apparent for the molecular and atomic nitrogen species generated by varying pressure and nitrogen composition in the plasma. Argon dilution resulted in nearly an order of magnitude achievable growth rate range from 1 μm/h to nearly 10 μm/h. Even for films grown at more than 6 μm/h, the surface morphology remained smooth showing clear atomic steps with root mean square roughness less than 1 nm. Due to the low vapor pressure of Si, Ge was explored as an alternative n-type dopant for high growth rate applications. Electron concentrations from 2.2 × 10{sup 16} to 3.8 × 10{sup 19} cm{sup −3} were achieved in GaN using Ge doping, and unintentionally doped GaN films exhibited low background electron concentrations of just 1–2 × 10{sup 15} cm{sup −3}. The highest growth rates resulted in macroscopic surface features due to Ga cell spitting, which is an engineering challenge still to be

  16. Control of ion content and nitrogen species using a mixed chemistry plasma for GaN grown at extremely high growth rates >9 μm/h by plasma-assisted molecular beam epitaxy

    International Nuclear Information System (INIS)

    Utilizing a modified nitrogen plasma source, plasma assisted molecular beam epitaxy (PAMBE) has been used to achieve higher growth rates in GaN. A higher conductance aperture plate, combined with higher nitrogen flow and added pumping capacity, resulted in dramatically increased growth rates up to 8.4 μm/h using 34 sccm of N2 while still maintaining acceptably low operating pressure. It was further discovered that argon could be added to the plasma gas to enhance growth rates up to 9.8 μm/h, which was achieved using 20 sccm of N2 and 7.7 sccm Ar flows at 600 W radio frequency power, for which the standard deviation of thickness was just 2% over a full 2 in. diameter wafer. A remote Langmuir style probe employing the flux gauge was used to indirectly measure the relative ion content in the plasma. The use of argon dilution at low plasma pressures resulted in a dramatic reduction of the plasma ion current by more than half, while high plasma pressures suppressed ion content regardless of plasma gas chemistry. Moreover, different trends are apparent for the molecular and atomic nitrogen species generated by varying pressure and nitrogen composition in the plasma. Argon dilution resulted in nearly an order of magnitude achievable growth rate range from 1 μm/h to nearly 10 μm/h. Even for films grown at more than 6 μm/h, the surface morphology remained smooth showing clear atomic steps with root mean square roughness less than 1 nm. Due to the low vapor pressure of Si, Ge was explored as an alternative n-type dopant for high growth rate applications. Electron concentrations from 2.2 × 1016 to 3.8 × 1019 cm−3 were achieved in GaN using Ge doping, and unintentionally doped GaN films exhibited low background electron concentrations of just 1–2 × 1015 cm−3. The highest growth rates resulted in macroscopic surface features due to Ga cell spitting, which is an engineering challenge still to be addressed. Nonetheless, the dramatically

  17. Dual ion beam assisted deposition of biaxially textured template layers

    Energy Technology Data Exchange (ETDEWEB)

    Groves, James R.; Arendt, Paul N.; Hammond, Robert H.

    2005-05-31

    The present invention is directed towards a process and apparatus for epitaxial deposition of a material, e.g., a layer of MgO, onto a substrate such as a flexible metal substrate, using dual ion beams for the ion beam assisted deposition whereby thick layers can be deposited without degradation of the desired properties by the material. The ability to deposit thicker layers without loss of properties provides a significantly broader deposition window for the process.

  18. NAOMI: nanoparticle assisted optical molecular imaging

    Science.gov (United States)

    Faber, Dirk J.; van Velthoven, Mirjam E. J.; de Bruin, Martijn; Aalders, Maurice C. G.; Verbraak, Frank D.; Graf, Christina; van Leeuwen, Ton G.

    2006-02-01

    Our first steps towards nanoparticle assisted, optical molecular imaging (NAOMI) using OCT as the imaging modality are presented. We derive an expression to estimate the sensitivity of this technique. We propose to use nanoparticles based on biodegradable polymers, loaded with suitable dyes as contrast agent, and outline a method for establishing their desired optical properties prior to synthesis. This report presents preliminary results of our investigation on the use of nanoshells to serve as contrast agents We injected nanoshells with specific contrast features in the 800 nm wavelength region in excised porcine eyes. The nanoshells showed up as bright reflecting structures in the OCT images, which confirm their potential as contrast agents.

  19. NAOMI: nanoparticle-assisted optical molecular imaging

    Science.gov (United States)

    Faber, Dirk J.; de Bruin, Martijn; Aalders, Maurice C. G.; Verbraak, Frank D.; van Leeuwen, Ton G.

    2007-02-01

    We present our first steps towards nanoparticle assisted, optical molecular imaging (NAOMI) using biodegradable nanoparticles. Our focus is on using optical coherence tomography(OCT) as the imaging modality. We propose to use nanoparticles based on biodegradable polymers, loaded with carefully selected dyes as contrast agent, and outline a method for establishing their desired optical properties prior to synthesis. Moreover, we perform a qualitative pilot study using these biodegradable nanoparticles, measuring their optical properties which are found to be in line with theoretical predictions.

  20. Silicon/Germanium Molecular Beam Epitaxy

    OpenAIRE

    Ericsson, Leif

    2006-01-01

    Molecular Beam Epitaxy (MBE) is a well-established method to grow low-dimensional structures for research applications. MBE has given many contributions to the rapid expanding research-area of nano-technology and will probably continuing doing so. The MBE equipment, dedicated for Silicon/Germanium (Si/Ge) systems, at Karlstads University (Kau) has been studied and started for the first time. In the work of starting the system, all the built in interlocks has been surveyed and connected, and t...

  1. Perspective: Oxide molecular-beam epitaxy rocks!

    Directory of Open Access Journals (Sweden)

    Darrell G. Schlom

    2015-06-01

    Full Text Available Molecular-beam epitaxy (MBE is the “gold standard” synthesis technique for preparing semiconductor heterostructures with high purity, high mobility, and exquisite control of layer thickness at the atomic-layer level. Its use for the growth of multicomponent oxides got off to a rocky start 30 yr ago, but in the ensuing decades, it has become the definitive method for the preparation of oxide heterostructures too, particularly when it is desired to explore their intrinsic properties. Examples illustrating the unparalleled achievements of oxide MBE are given; these motivate its expanding use for exploring the potentially revolutionary states of matter possessed by oxide systems.

  2. Perspective: Oxide molecular-beam epitaxy rocks!

    Energy Technology Data Exchange (ETDEWEB)

    Schlom, Darrell G., E-mail: schlom@cornell.edu [Department of Materials Science and Engineering, Cornell University, Ithaca, New York 14853, USA and Kavli Institute at Cornell for Nanoscale Science, Ithaca, New York 14853 (United States)

    2015-06-01

    Molecular-beam epitaxy (MBE) is the “gold standard” synthesis technique for preparing semiconductor heterostructures with high purity, high mobility, and exquisite control of layer thickness at the atomic-layer level. Its use for the growth of multicomponent oxides got off to a rocky start 30 yr ago, but in the ensuing decades, it has become the definitive method for the preparation of oxide heterostructures too, particularly when it is desired to explore their intrinsic properties. Examples illustrating the unparalleled achievements of oxide MBE are given; these motivate its expanding use for exploring the potentially revolutionary states of matter possessed by oxide systems.

  3. Molecular beam depletion: a new approach

    CERN Document Server

    Dorado, Manuel

    2014-01-01

    During the last years some interesting experimental results have been reported for experiments in N20, N0 , N0 dimer , H2 , Toluene and BaFCH3 cluster. The main result consists in the observation of molecular beam depletion when the molecules of a pulsed beam interact with a static electric or magnetic field and an oscillating field (RF). In these cases, and as a main difference, instead of using four fields as in the original technique developed by I.I. Rabi and others, only two fields, those which configure the resonant unit, are used. That is, without using the nonhomogeneous magnetic fields. The depletion explanation for I.I. Rabi and others is based in the interaction between the molecular electric or magnetic dipole moment and the non-homogeneous fields. But, obviously, the change in the molecules trajectories observed on these new experiments has to be explained without considering the force provided by the field gradient because it happens without using non-homogeneous fields. In this paper a theoreti...

  4. Electron beam assisted field evaporation of insulating nanowires/tubes

    Energy Technology Data Exchange (ETDEWEB)

    Blanchard, N. P., E-mail: nicholas.blanchard@univ-lyon1.fr; Niguès, A.; Choueib, M.; Perisanu, S.; Ayari, A.; Poncharal, P.; Purcell, S. T.; Siria, A.; Vincent, P. [Institut Lumière Matière, UMR5306 Université Lyon 1-CNRS, Université de Lyon, 69622 Villeurbanne Cedex (France)

    2015-05-11

    We demonstrate field evaporation of insulating materials, specifically BN nanotubes and undoped Si nanowires, assisted by a convergent electron beam. Electron irradiation leads to positive charging at the nano-object's apex and to an important increase of the local electric field thus inducing field evaporation. Experiments performed both in a transmission electron microscope and in a scanning electron microscope are presented. This technique permits the selective evaporation of individual nanowires in complex materials. Electron assisted field evaporation could be an interesting alternative or complementary to laser induced field desorption used in atom probe tomography of insulating materials.

  5. High Density Pulsed Molecular Beam for Cold Ion Chemistry

    OpenAIRE

    Kokish, M. G.; V.Rajagopal; Marler, J. P.; Odom, B. C.

    2014-01-01

    A recent expansion of cold and ultracold molecule applications has led to renewed focus on molecular species preparation under ultrahigh vacuum conditions. Meanwhile, molecular beams have been used to study gas phase chemical reactions for decades. In this manuscript, we describe an apparatus that uses pulsed molecular beam technology to achieve high local gas densities, leading to faster reaction rates with cold trapped ions. We characterize the beam's spatial profile using the trapped ions ...

  6. Hemocompatibility of DLC coatings synthesized by ion beam assisted deposition

    Institute of Scientific and Technical Information of China (English)

    2001-01-01

    Ion beam-assisted diamond-like carbon (DLC) coatings have beenused for growing the human platelet, fibrinogen, and albumin in the control environment in order to assess their hemocompatibility. The hard carbon films were prepared on polymethylmethacrylate (PMMA) at room temperature using ion beam assisted deposition (IBAD). Raman spectroscopic analysis proved that the carbon films on PMMA are diamond-like with a higher fraction of sp\\+3 bonds in the structure of mixed sp\\+2+sp\\+3 bonding. The blood protein adsorption tests showed that DLC coatings can adsorb more albumin and are slightly more fibrinogen than the PMMA chosen as a control sample. The platelets adhered on DLC coatings were reduced significantly in number. These results indicate good hemocompatibility of DLC coatings.

  7. Electron-beam-assisted Scanning Tunneling Microscopy Of Insulating Surfaces

    CERN Document Server

    Bullock, E T

    2000-01-01

    Insulating materials are widely used in electronic devices. Bulk insulators and insulating films pose unique challenges for high resolution study since most commonly used charged particle surface analysis techniques are incompatible with insulating surfaces and materials. A, method of performing scanning tunneling microscopy (STM) on insulating surfaces has been investigated. The method is referred to as electron-beam assisted scanning tunneling microscopy (e-BASTM). It is proposed that by coupling the STM and the scanning electron microscopy (SEM) as one integrated device, that insulating materials may be studied, obtaining both high spatial resolution, and topographic and electronic resolution. The premise of the technique is based on two physical consequences of the interaction of an energetic electron beam (PE) with a material. First, when an electron beam is incident upon a material, low level material electrons are excited into conduction band states. For insulators, with very high secondary electron yi...

  8. Twenty years of molecular beam epitaxy

    Science.gov (United States)

    Cho, A. Y.

    1995-05-01

    The term "molecular beam epitaxy" (MBE) was first used in one of our crystal growth papers in 1970, after having conducted extensive surface physics studies in the late 1960's of the interaction of atomic and molecular beams with solid surfaces. The unique feature of MBE is the ability to prepare single crystal layers with atomic dimensional precision. MBE sets the standard for epitaxial growth and has made possible semiconductor structures that could not be fabricated with either naturally existing materials or by other crystal growth techniques. MBE led the crystal growth technologies when it prepared the first semiconductor quantum well and superlattice structures that gave unexpected and exciting electrical and optical properties. For example, the discovery of the fractional quantized Hall effect. It brought experimental quantum physics to the classroom, and practically all major universities throughout the world are now equipped with MBE systems. The fundamental principles demonstrated by the MBE growth of III-V compound semiconductors have also been applied to the growth of group IV, II-VI, metal, and insulating materials. For manufacturing, the most important criteria are uniformity, precise control of the device structure, and reproducibility. MBE has produced more lasers (3 to 5 million per month for compact disc application) than any other crystal growth technique in the world. New directions for MBE are to incorporate in-situ, real-time monitoring capabilities so that complex structures can be precisely "engineered". In the future, as environmental concerns increase, the use of toxic arsine and phosphine may be limited. Successful use of valved cracker cells for solid arsenic and phosphorus has already produced InP based injection lasers.

  9. Merged-Beams for Slow Molecular Collision Experiments

    CERN Document Server

    Wei, Qi; Herschbach, Dudley

    2012-01-01

    Molecular collisions can be studied at very low relative kinetic energies, in the milliKelvin range, by merging codirectional beams with much higher translational energies, extending even to the kiloKelvin range, provided that the beam speeds can be closely matched. This technique provides far more intensity and wider chemical scope than methods that require slowing both collision partners. Previously, at far higher energies, merged beams have been widely used with ions and/or neutrals formed by charge transfer. Here we assess for neutral, thermal molecular beams the range and resolution of collision energy that now appears attainable, determined chiefly by velocity spreads within the merged beams. Our treatment deals both with velocity distributions familiar for molecular beams formed by effusion or supersonic expansion, and an unorthodox variant produced by a rotating supersonic source capable of scanning the lab beam velocity over a wide range.

  10. Note: High density pulsed molecular beam for cold ion chemistry

    International Nuclear Information System (INIS)

    A recent expansion of cold and ultracold molecule applications has led to renewed focus on molecular species preparation under ultrahigh vacuum conditions. Meanwhile, molecular beams have been used to study gas phase chemical reactions for decades. In this paper, we describe an apparatus that uses pulsed molecular beam technology to achieve high local gas densities, leading to faster reaction rates with cold trapped ions. We characterize the beam's spatial profile using the trapped ions themselves. This apparatus could be used for preparation of molecular species by reactions requiring excitation of trapped ion precursors to states with short lifetimes or for obtaining a high reaction rate with minimal increase of background chamber pressure

  11. A source of translationally cold molecular beams

    Science.gov (United States)

    Sarkozy, Laszlo C.

    Currently the fields studying or using molecules with low kinetic energies are experiencing an unprecedented growth. Astronomers and chemists are interested in chemical reactions taking place at temperatures below or around 20 K, spectroscopists could make very precise measurements on slow molecules and molecular physicists could chart the potential energy surfaces more accurately. And the list continues. All of these experiments need slow molecules, with kinetic energies from around 10 cm-1 down to 0. Several designs of cold sources have already been made. The most interesting ones are presented. This work describes the design and the testing of a cold source based on the collisional cooling technique: the molecules of interest are cooled well below their freezing point by a precooled buffer gas. This way condensation is avoided. The source is a copper cell cooled to 4.2 K by an external liquid helium bath. The cell is filled with cold buffer gas (helium). The molecules of choice (ammonia) are injected through a narrow tube in the middle of the cell. The cold molecules leave the cell through a 1 millimeter hole. Two versions of pulsing techniques have been employed: a shutter blade which covers the source hole and opens it only for short moments, and a chopper that modulates the beam further downstream. Both produced pulse lengths around 1 millisecond. The source is tested in an experiment in which the emerging molecules are focused and detected. Time of flight technique is used to measure the kinetic energies. Two detectors have been employed: a microwave cavity to analyze the state of the molecules in the beam, and a mass spectrometer to measure the number density of the particles. The molecules coming out of the source hole are formed into a beam by an electrostatic quadrupole state selector. The quantum mechanical aspects and the elements of electrodynamics involved in the focusing are described. A computer simulation program is presented, which helped

  12. Molecular beam studies of reaction dynamics

    Energy Technology Data Exchange (ETDEWEB)

    Lee, Y.T. [Lawrence Berkeley Laboratory, CA (United States)

    1993-12-01

    The major thrust of this research project is to elucidate detailed dynamics of simple elementary reactions that are theoretically important and to unravel the mechanism of complex chemical reactions or photochemical processes that play important roles in many macroscopic processes. Molecular beams of reactants are used to study individual reactive encounters between molecules or to monitor photodissociation events in a collision-free environment. Most of the information is derived from measurement of the product fragment energy, angular, and state distributions. Recent activities are centered on the mechanisms of elementary chemical reactions involving oxygen atoms with unsaturated hydrocarbons, the dynamics of endothermic substitution reactions, the dependence of the chemical reactivity of electronically excited atoms on the alignment of excited orbitals, the primary photochemical processes of polyatomic molecules, intramolecular energy transfer of chemically activated and locally excited molecules, the energetics of free radicals that are important to combustion processes, the infrared-absorption spectra of carbonium ions and hydrated hydronium ions, and bond-selective photodissociation through electric excitation.

  13. Molecular simulation of polymer assisted protein refolding

    Science.gov (United States)

    Lu, Diannan; Liu, Zheng

    2005-10-01

    Protein refolding in vitro, the formation of the tertiary structure that enables the protein to display its biological function, can be significantly enhanced by adding a polymer of an appropriate hydrophobicity and concentration into the refolding buffer. A molecular simulation of the refolding of a two-dimensional simple lattice protein was presented. A protein folding map recording the occurrence frequency of specified conformations was derived, from which the refolding thermodynamics and kinetics were interpreted. It is shown that, in the absence of polymer, the protein falls into the "energy trapped" conformations characterized by a high intramolecular hydrophobic interaction, denoted as HH contact, and a high magnitude of the structure overlap function, χ. This makes it difficult for the protein to fold to the native state. The polymer with a suitable chain length, concentration, and hydrophobicity has formed complex with partially folded protein and created diversified intermediates with low χ. This gives more pathways for the protein to fold to the native state. At a given hydrophobicity, the short chain polymer has a broader concentration range where it assists protein folding than those of long chains. The above simulation agrees well with the experimental results reported elsewhere [Cleland et al., J. Biol. Chem. 267, 13327 (1992); ibid., Bio/Technology 10, 1013 (1992); Chen et al., Enzyme Microb. Technol. 32, 120 (2003); Lu et al., Biochem. Eng. J. 24, 55 (2005); ibid., J. Chem. Phys. 122, 134902 (2005); ibid., Biochem. Eng. J. (to be published)] and is of fundamental importance for the design and application of polymers for protein refolding.

  14. Fabrication of Superconducting Mo/Cu Bilayers Using Ion-Beam-Assisted e-Beam Evaporation

    Science.gov (United States)

    Jaeckel, Felix T.; Kripps, Kari L.; Morgan, Kelsey M.; Zhang, Shuo; McCammon, Dan

    2016-08-01

    Superconducting/normal metal bilayers with tunable transition temperature are a critical ingredient to the fabrication of high-performance transition edge sensors. Popular material choices include Mo/Au and Mo/Cu, which exhibit good environmental stability and provide low resistivity films to achieve adequate thermal conductivity. The deposition of high-quality Mo films requires sufficient adatom mobility, which can be provided by energetic ions in sputter deposition or by heating the substrate in an e-beam evaporation process. The bilayer T_c depends sensitively on the exact deposition conditions of the Mo layer and the superconducting/normal metal interface. Because the individual contributions (strain, crystalline structure, contamination) are difficult to disentangle and control, reproducibility remains a challenge. Recently, we have demonstrated that low-energy ion-beam-assisted e-beam evaporation offers an alternative route to reliably produce high-quality Mo films without the use of substrate heating. The energy and momentum delivered by the ion beam provides an additional control knob to tune film properties such as resistivity and stress. In this report we describe modifications made to the commercial end-Hall ion source to avoid iron contamination allowing us to produce superconducting Mo films. We show that the ion beam is effective at enhancing the bilayer interface transparency and that bilayers can be further tuned towards reduced T_c and higher conductivity by vacuum annealing.

  15. Surface chemical reactions induced by well-controlled molecular beams: translational energy and molecular orientation control

    Energy Technology Data Exchange (ETDEWEB)

    Okada, Michio, E-mail: okada@chem.sci.osaka-u.ac.j, E-mail: mokada@cw.osaka-u.ac.j [Renovation Center of Instruments for Science Education and Technology, Osaka University, Mihogaoka 8-1, Ibaraki, Osaka 567-0047 and 1-2 Machikaneyama-cho, Toyonaka, Osaka 560-0043 (Japan)

    2010-07-07

    I review our recent studies of chemical reactions on single-crystalline Cu and Si surfaces induced by hyperthermal oxygen molecular beams and by oriented molecular beams, respectively. Studies of oxide formation on Cu induced by hyperthermal molecular beams suggest that the translational energy of the incident molecules plays a significant role. The use of hyperthermal molecular beams enables us to open up new chemical reaction paths, and to develop new methods for the fabrication of thin films. Oriented molecular beams also demonstrate the possibility for controlling surface chemical reactions by varying the orientation of the incident molecules. The steric effects found on Si surfaces hint at new ways of achieving material fabrication on Si surfaces. Controlling the initial conditions of incoming molecules is a powerful tool for creating new materials on surfaces with well-controlled chemical reactions. (topical review)

  16. Kinetics of self-induced nucleation and optical properties of GaN nanowires grown by plasma-assisted molecular beam epitaxy on amorphous Al{sub x}O{sub y}

    Energy Technology Data Exchange (ETDEWEB)

    Sobanska, M., E-mail: sobanska@ifpan.edu.pl; Zytkiewicz, Z. R.; Klosek, K.; Tchutchulashvili, G. [Institute of Physics, Polish Academy of Sciences, Al. Lotnikow 32/46, 02-668 Warsaw (Poland); Korona, K. P. [Faculty of Physics, University of Warsaw, Pasteura 5, 02-093 Warsaw (Poland)

    2015-11-14

    Nucleation kinetics of GaN nanowires (NWs) by molecular beam epitaxy on amorphous Al{sub x}O{sub y} buffers deposited at low temperature by atomic layer deposition is analyzed. We found that the growth processes on a-Al{sub x}O{sub y} are very similar to those observed on standard Si(111) substrates, although the presence of the buffer significantly enhances nucleation rate of GaN NWs, which we attribute to a microstructure of the buffer. The nucleation rate was studied vs. the growth temperature in the range of 720–790 °C, which allowed determination of nucleation energy of the NWs on a-Al{sub x}O{sub y} equal to 6 eV. This value is smaller than 10.2 eV we found under the same conditions on nitridized Si(111) substrates. Optical properties of GaN NWs on a-Al{sub x}O{sub y} are analyzed as a function of the growth temperature and compared with those on Si(111) substrates. A significant increase of photoluminescence intensity and much longer PL decay times, close to those on silicon substrates, are found for NWs grown at the highest temperature proving their high quality. The samples grown at high temperature have very narrow PL lines. This allowed observation that positions of donor-bound exciton PL line in the NWs grown on a-Al{sub x}O{sub y} are regularly lower than in samples grown directly on silicon suggesting that oxygen, instead of silicon, is the dominant donor. Moreover, PL spectra suggest that total concentration of donors in GaN NWs grown on a-Al{sub x}O{sub y} is lower than in those grown under similar conditions on bare Si. This shows that the a-Al{sub x}O{sub y} buffer efficiently acts as a barrier preventing uptake of silicon from the substrate to GaN.

  17. Reactive Collisions in Crossed Molecular Beams

    Science.gov (United States)

    Herschbach, D. R.

    1962-02-01

    The distribution of velocity vectors of reaction products is discussed with emphasis on the restrictions imposed by the conservation laws. The recoil velocity that carries the products away from the center of mass shows how the energy of reaction is divided between internal excitation and translation. Similarly, the angular distributions, as viewed from the center of mass, reflect the partitioning of the total angular momentum between angular momenta of individual molecules and orbital angular momentum associated with their relative motion. Crossed-beam studies of several reactions of the type M + RI yields R + MI are described, where M = K, Rb, Cs, and R = CH{sub 3}, C{sub 3}H{sub 5}, etc. The results show that most of the energy of reaction goes into internal excitation of the products and that the angular distribution is quite anisotropic, with most of the MI recoiling backward (and R forward) with respect to the incoming K beam. (auth)

  18. Intense Atomic and Molecular Beams via Neon Buffer Gas Cooling

    CERN Document Server

    Patterson, David; Doyle, John M

    2008-01-01

    We realize a continuous guided beam of cold deuterated ammonia with a flux of 3e11 ND3 molecules/s and a continuous free-space beam of cold potassium with a flux of 1e16 K atoms/s. A novel feature of the buffer gas source used to produce these beams is cold neon, which, due to intermediate Knudsen number beam dynamics, produces a forward velocity and low-energy tail that is comparable to much colder helium-based sources. We expect this source to be trivially generalizable to a very wide range of atomic and molecular species with significant vapor pressure below 1000 K. This source has properties that make it a good starting point for laser cooling of molecules or atoms, cold collision studies, trapping, or nonlinear optics in buffer-gas-cooled atomic or molecular gases.

  19. Molecule-surface scattering with velocity-controlled molecular beams

    International Nuclear Information System (INIS)

    The production of cold molecular beams with a tunable velocity by means of pulsed electric fields, known as Stark deceleration, is now mature and convenient. At the same time, molecular beam experiments that use traditional ways of velocity manipulation have been commonly used to study different aspects of molecule-surface interactions in the regime of high kinetic energy. We present a new generation of molecule-surface scattering machine, which brings the advantages of Stark decelerated molecular beams to the field of surface physics. Using this machine, CO molecules will be scattered at surfaces, quantum-state selective with respect to both impacting and scattered molecules, while providing a tunable velocity in the range of 1000 to 20 m/s with an exceptional translational energy resolution.

  20. An Introduction to the Supersonic Molecular Beam Injection

    Institute of Scientific and Technical Information of China (English)

    2001-01-01

    Recently a new fuelling method with supersonic molecular beam injection (MBI) has been developed and used in the tokamaks experiments successfully. It is economical to develop and maintain. The advantages of supersonic MBI compared with the conventional of gas-puffing method are as follows: deep deposition of fuel, better fuelling efficiency, reduced recycling and pure plasma. Particle and energy confinement can be improved and density limit extended. This review described the Laval nozzle molecular beam and a simple collective model for the injection of a supersonic MBI into the tokamak plasma.

  1. Quantum Molecular Dynamics Simulations of Nanotube Tip Assisted Reactions

    Science.gov (United States)

    Menon, Madhu

    1998-01-01

    In this report we detail the development and application of an efficient quantum molecular dynamics computational algorithm and its application to the nanotube-tip assisted reactions on silicon and diamond surfaces. The calculations shed interesting insights into the microscopic picture of tip surface interactions.

  2. Pulsed rotating supersonic source for merged molecular beams

    Science.gov (United States)

    Sheffield, Les; Hickey, Mark; Krasovitskiy, Vitaliy; Rathnayaka, Daya; Lyuksyutov, Igor; Herschbach, Dudley

    2012-10-01

    We continue the characterization of a pulsed rotating supersonic beam source. The original device was described by M. Gupta and D. Herschbach, J. Phys. Chem. A 105, 1626 (2001). The beam emerges from a nozzle near the tip of a hollow rotor which can be spun at high-speed to shift the molecular velocity distribution downward or upward over a wide range. Here we consider mostly the slowing mode. Introducing a pulsed gas inlet system, and a shutter gate eliminate the main handicap of the original device in which continuous gas flow imposed high background pressure. The new version provides intense pulses, of duration 0.1--0.6 ms (depending on rotor speed) and containing ˜10^12 molecules at lab speeds as low as 35 m/s and ˜10^15 molecules at 400 m/s. Beams of any molecule available as a gas can be slowed (or speeded); e.g., we have produced slow and fast beams of rare gases, O2, NO2, NH3, and SF6. For collision experiments, the ability to scan the beam speed by merely adjusting the rotor is especially advantageous when using two merged beams. By closely matching the beam speeds, very low relative collision energies can be attained without making either beam very slow.

  3. Molecular Beam Epitaxy of LiMnAs

    OpenAIRE

    Novak, V.; Cukr, M.; Soban, Z.; Jungwirth, T.; Marti, X; Holy, V.; Horodyska, P.; Nemec, P.

    2010-01-01

    We report on the molecular beam epitaxy (MBE) growth of high crystalline quality LiMnAs. The introduction of a group-I alkali metal element Li with flux comparable to fluxes of Mn and As has not caused any apparent damage to the MBE system after as many as fifteen growth cycles performed on the system to date.

  4. InAs nanowire growth modes on Si (111) by gas source molecular beam epitaxy

    Science.gov (United States)

    Robson, M. T.; LaPierre, R. R.

    2016-02-01

    InAs nanowires (NWs) were grown on silicon substrates by gas source molecular beam epitaxy using five different growth modes: (1) Au-assisted growth, (2) positioned (patterned) Au-assisted growth, (3) Au-free growth, (4) positioned Au-assisted growth using a patterned oxide mask, and (5) Au-free selective-area epitaxy (SAE) using a patterned oxide mask. Optimal growth conditions (temperature, V/III flux ratio) were identified for each growth mode for control of NW morphology and vertical NW yield. The highest yield (72%) was achieved with the SAE method at a growth temperature of 440 °C and a V/III flux ratio of 4. Growth mechanisms are discussed for each of the growth modes.

  5. Pulsed rotating supersonic source used with merged molecular beams

    OpenAIRE

    Sheffield, L.; Hickey, M.; Krasovitskiy, V.; Rathnayaka, K. D. D.; Lyuksyutov, I. F.; Herschbach, D. R.

    2012-01-01

    We describe a pulsed rotating supersonic beam source, evolved from an ancestral device [M. Gupta and D. Herschbach, J. Phys. Chem. A 105, 1626 (2001)]. The beam emerges from a nozzle near the tip of a hollow rotor which can be spun at high-speed to shift the molecular velocity distribution downward or upward over a wide range. Here we consider mostly the slowing mode. Introducing a pulsed gas inlet system, cryocooling, and a shutter gate eliminated the main handicap of the original device, in...

  6. Molecular beam sampling system with very high beam-to-background ratio: The rotating skimmer concept

    International Nuclear Information System (INIS)

    A novel method of reducing the background pressure in a vacuum system used for sampling a molecular beam from a high pressure region is presented. A triple differential pumping stage is constructed with a chopper with rotating skimmer within the first pumping stage, which serves effectively as a valve separating periodically the vacuum system from the ambient environment. The mass spectrometry measurement of the species in the molecular beam show an excellent beam-to-background ratio of 14 and a detection limit below 1 ppm. The potential of this method for detection of low density reactive species in atmospheric pressure plasmas is demonstrated for the detection of oxygen atoms generated in an atmospheric pressure microplasma source.

  7. Molecular beam epitaxy growth and optical properties of single crystal Zn3N2 films

    Science.gov (United States)

    Wu, Peng; Tiedje, T.; Alimohammadi, H.; Bahrami-Yekta, V.; Masnadi-Shirazi, M.; Wang, Cong

    2016-10-01

    Single crystal Zn3N2 films with (100) orientation have been grown by plasma-assisted molecular beam epitaxy on MgO and A-plane sapphire substrates with in situ optical reflectance monitoring of the growth. The optical bandgap was found to be 1.25-1.28 eV and an electron Hall mobility as high as 395 cm2 V-1 s-1 was measured. The films were n-type with carrier concentrations in the 1018-1019 cm-3 range.

  8. Molecular beam brightening by shock-wave suppression

    CERN Document Server

    Segev, Yair; Akerman, Nitzan; Shagam, Yuval; Luski, Alon; Karpov, Michael; Narevicius, Julia; Narevicius, Edvardas

    2016-01-01

    Supersonic beams are a prevalent source of cold molecules utilized in the study of chemical reactions, atom interferometry, gas-surface interactions, precision spectroscopy, molecular cooling and more. The triumph of this method emanates from the high densities produced in relation to other methods, however beam density remains fundamentally limited by interference with shock waves reflected from collimating surfaces. Here we show experimentally that this shock interaction can be reduced or even eliminated by cryo-cooling the interacting surface. An increase in beam density of nearly an order of magnitude was measured at the lowest surface temperature, with no further fundamental limitation reached. Visualization of the shock waves by plasma discharge and reproduction with direct simulation Monte Carlo calculations both indicate that the suppression of the shock structure is partially caused by lowering the momentum flux of reflected particles, and significantly enhanced by the adsorption of particles to the ...

  9. Atmospheric processes on ice nanoparticles in molecular beams

    OpenAIRE

    Michal eFárník; Viktoriya ePoterya

    2014-01-01

    This review summarizes some recent experiments with ice nanoparticles (large water clusters) in molecular beams and outlines their atmospheric relevance: (1) Investigation of mixed water–nitric acid particles by means of the electron ionization and sodium doping combined with photoionization revealed the prominent role of HNO3 molecule as the condensation nuclei. (2) The uptake of atmospheric molecules by water ice nanoparticles has been studied, and the pickup cross sections for some molecul...

  10. Induced base transistor fabricated by molecular beam epitaxy

    Science.gov (United States)

    Chang, C.-Y.; Liu, W. C.; Jame, M. S.; Wang, Y. H.; Luryi, S.

    1986-09-01

    A novel three-terminal hot-electron device, the induced base transistor (IBT), has been fabricated by molecular beam epitaxy. Two-dimensional electron gas induced by the applied collector field in an undoped GaAs quantum well is used as the base of the IBT. The common-base current gain alpha has been achieved as high as 0.96 under a collector bias of 2.5 V and an emitter current of 3 mA.

  11. A Bright, Guided Molecular Beam With Hydrodynamic Enhancement

    OpenAIRE

    Patterson, David; Doyle, John M.

    2007-01-01

    We realize a novel high flux source of cold atoms and molecules employing hydrodynamic enhancement of an effusive aperture at cryogenic temperatures. Molecular oxygen from the source is coupled to a magnetic guide, delivering a cold, continuous, guided flux of 3e12 oxygen molecules per second, with a molecule temperature of a few kelvin. The dynamics of the source are studied by creating and spectroscopically analyzing high-flux beams of atomic ytterbium.

  12. Electron beam-assisted healing of nanopores in magnesium alloys

    Science.gov (United States)

    Zheng, He; Liu, Yu; Cao, Fan; Wu, Shujing; Jia, Shuangfeng; Cao, Ajing; Zhao, Dongshan; Wang, Jianbo

    2013-01-01

    Nanopore-based sensing has emerged as a promising candidate for affordable and powerful DNA sequencing technologies. Herein, we demonstrate that nanopores can be successfully fabricated in Mg alloys via focused electron beam (e-beam) technology. Employing in situ high-resolution transmission electron microscopy techniques, we obtained unambiguous evidence that layer-by-layer growth of atomic planes at the nanopore periphery occurs when the e-beam is spread out, leading to the shrinkage and eventual disappearance of nanopores. The proposed healing process was attributed to the e-beam-induced anisotropic diffusion of Mg atoms in the vicinity of nanopore edges. A plausible diffusion mechanism that describes the observed phenomena is discussed. Our results constitute the first experimental investigation of nanopores in Mg alloys. Direct evidence of the healing process has advanced our fundamental understanding of surface science, which is of great practical importance for many technological applications, including thin film deposition and surface nanopatterning. PMID:23719630

  13. Gravity Assist and Scattering off AGB Stars off Molecular Clouds

    Directory of Open Access Journals (Sweden)

    Ahmad H. Abdelhadi

    2009-01-01

    Full Text Available The scattering of stellar orbits by galactic molecular clouds is studied in hope of explaining isotopic peculiarities of presolar grains from Asymptotic Giant Branch (AGB stars. Silicon isotopic anomalies found in the mainstream Silicon Carbide (SiC grains are observed to have heavy isotopes enriched. To explain the isotopic heaviness I propose that AGB stars that formed in the interior region of the galaxy, with metallicity higher than solar, change their orbits during close encounters with molecular clouds. The AGB stars give up their SiC grains in winds deposited in the solar neighborhood prior to the birth of the Sun. I model the dynamics by superposing on a standard axisymmetric galactic potential the discrete potentials of thousands of molecular clouds moving in constant circular orbits. Gravity assist occurs when a star scattered into a crossing orbit by one cloud experiences forward scattering from a second cloud.

  14. Pulsed rotating supersonic source used with merged molecular beams

    CERN Document Server

    Sheffield, L; Krasovitskiy, V; Rathnayaka, K D D; Lyuksyutov, I F; Herschbach, D R

    2012-01-01

    We describe a pulsed rotating supersonic beam source, evolved from an ancestral device [M. Gupta and D. Herschbach, J. Phys. Chem. A 105, 1626 (2001)]. The beam emerges from a nozzle near the tip of a hollow rotor which can be spun at high-speed to shift the molecular velocity distribution downward or upward over a wide range. Here we consider mostly the slowing mode. Introducing a pulsed gas inlet system, cryocooling, and a shutter gate eliminated the main handicap of the original device, in which continuous gas flow imposed high background pressure. The new version provides intense pulses, of duration 0.1-0.6 ms (depending on rotor speed) and containing ~10^12 molecules at lab speeds as low as 35 m/s and ~ 10^15 molecules at 400 m/s. Beams of any molecule available as a gas can be slowed (or speeded); e.g., we have produced slow and fast beams of rare gases, O2, Cl2, NO2, NH3, and SF6. For collision experiments, the ability to scan the beam speed by merely adjusting the rotor is especially advantageous when...

  15. Molecular beam studies with a time-of-flight machine

    International Nuclear Information System (INIS)

    The study concerns the development of the time-of-flight method for the velocity analysis of molecular beams and its application to the measurement of the velocity dependence of the total cross-section of the noble gases. It reviews the elastic scattering theory, both in the framework of classical mechanics and in the quantum mechanical description. Attention is paid to the semiclassical correspondence of classical particle trajectories with the partial waves of the quantum mechanical solution. The total cross-section and the small angle differential cross-section are discussed with special emphasis on their relation. The results of this chapter are used later to derive the correction on the measured total cross-section due to the finite angular resolution of the apparatus. Reviewed also is the available information on the intermolecular potential of the Ar-Ar system. Then a discussion of the measurement of total cross-sections with the molecular beam method and the time-of-flight method is compared to other methods used. It is shown that the single burst time-of-flight method can be developed into a reliable and well-calibrated method for the analysis of the velocity distribution of molecular beams. A comparison of the single burst time-of-flight method with the cross-correlation time-of-flight method shows that the two methods are complementary and that the specific experimental circumstances determine which method is to be preferred. Molecular beam sources are discussed. The peaking factor formalism is introduced and helps to compare the performance of different types of sources. The effusive and the supersonic source are treated and recent experimental results are given. The multichannel source is treated in more detail. For the opaque mode, an experimental investigation of the velocity distribution and the angular distribution of the flow pattern is presented. Comparison of these results with Monte Carlo calculations for free molecular flow in a cylindrical

  16. Ion assistance effects on electron beam deposited MgF sub 2 films

    CERN Document Server

    Alvisi, M; Della Patria, A; Di Giulio, M; Masetti, E; Perrone, M R; Protopapa, M L; Tepore, A

    2002-01-01

    Thin films of MgF sub 2 have been deposited by the ion-assisted electron-beam evaporation technique in order to find out the ion beam parameters leading to films of high laser damage threshold whose optical properties are stable under uncontrolled atmosphere conditions. It has been found that the ion-assisted electron-beam evaporation technique allows getting films with optical properties (refraction index and extinction coefficient) of high environmental stability by properly choosing the ion-source voltage and current. But, the laser damage fluence at 308 nm was quite dependent on the assisting ion beam parameters. Larger laser damage fluences have been found for the films deposited by using assisting ion beams delivered at lower anode voltage and current values. It has also been found that the films deposited without ion assistance were characterized by the highest laser damage fluence (5.9 J/cm sup 2) and the lowest environmental stability. The scanning electron microscopy analysis of the irradiated areas...

  17. Titania-assisted electron-beam and synchrotron lithography

    Science.gov (United States)

    Skorb, Ekaterina V.; Grützmacher, Detlev; Dais, Christian; Guzenko, Vitaliy A.; Sokolov, Valeriy G.; Gaevskaya, Tatjana V.; Sviridov, Dmitry V.

    2010-08-01

    Novel imaging layer technology for electron-beam and extreme-ultraviolet lithographic processes based upon generation of Pd nanoparticles in the Pd2 + -loaded TiO2 films was developed. The electroless metallization of the patterned TiO2:Pd2 + films yields both negative and positive nickel images with resolution down to ~ 100 nm.

  18. Experimental demonstration of a controllable electrostatic molecular beam splitter.

    Science.gov (United States)

    Deng, Lianzhong; Liang, Yan; Gu, Zhenxing; Hou, Shunyong; Li, Shengqiang; Xia, Yong; Yin, Jianping

    2011-04-01

    We experimentally demonstrate a controllable electrostatic beam splitter for guided ND3 molecules with a single Y-shaped charged wire and a homogeneous bias field generated by a charged metallic parallel-plate capacitor. We study the dependences of the splitting ratio R of the guided ND3 beam and its relative guiding efficiency η on the voltage difference between two output arms of the splitter. The influences of the molecular velocity v and the cutting position L on the splitting ratio R are investigated as well, and the guiding and splitting dynamic processes of cold molecules are simulated. Our study shows that the splitting ratio R of our splitter can be conveniently adjusted from 10% to 90% by changing ΔU from -6  kV to +6  kV, and the simulated results are consistent with our experimental ones.

  19. Crossed molecular beam studies of unimolecular reaction dynamics

    International Nuclear Information System (INIS)

    The study of seven radical-molecule reactions using the crossed molecular beam technique with supersonic nozzle beams is reported. Product angular and velocity distributions were obtained and compared with statistical calculations in order to identify dynamical features of the reactions. In the reaction of chlorine and fluorine atoms with vinyl bromide, the product energy distributions are found to deviate from predictions of the statistical model. A similar effect is observed in the reaction of chlorine atoms with 1, 2 and 3-bromopropene. The reaction of oxygen atoms with ICl and CF3I has been used to obtain an improved value of the IO bond energy, 55.0 +- 2.0 kcal mol-1. In all reactions studied, the product energy and angular distributions are found to be coupled, and this is attributed to a kinematic effect of the conservation of angular momentum

  20. Titania-assisted electron-beam and synchrotron lithography

    Energy Technology Data Exchange (ETDEWEB)

    Skorb, Ekaterina V; Sviridov, Dmitry V [Chemistry Department, Belarusian State University, Leningradskaya 14, 22030 Minsk (Belarus); Gruetzmacher, Detlev; Dais, Christian [Laboratory for Micro- and Nanotechnology, Paul Scherrer Institut, CH-5232 Villigen (Switzerland); Guzenko, Vitaliy A [Department of Bio- and Nanosystems, Research Center Juelich, D-52425 Juelich (Germany); Sokolov, Valeriy G; Gaevskaya, Tatjana V, E-mail: skorb@mpikg.mpg.de [Institute for Physico-Chemical Problems, Belarusian State University, Leningradskaya 14, 22030 Minsk (Belarus)

    2010-08-06

    Novel imaging layer technology for electron-beam and extreme-ultraviolet lithographic processes based upon generation of Pd nanoparticles in the Pd{sup 2+}-loaded TiO{sub 2} films was developed. The electroless metallization of the patterned TiO{sub 2}:Pd{sup 2+} films yields both negative and positive nickel images with resolution down to {approx} 100 nm.

  1. A molecular beam epitaxy facility for in situ neutron scattering

    International Nuclear Information System (INIS)

    A molecular beam epitaxy (MBE) facility has been built to enable in situ neutron scattering measurements during growth of epitaxial layers. While retaining the full capabilities of a research MBE chamber, this facility has been optimized for polarized neutron reflectometry measurements. Optimization includes a compact lightweight portable design, a neutron window, controllable magnetic field, deposition across a large 76 mm diameter sample with exceptional flux uniformity, and sample temperatures continuously controllable from 38 to 1375 K. A load lock chamber allows for sample insertion, storage of up to 4 samples, and docking with other facilities. The design and performance of this chamber are described here.

  2. Kinetic roughening in models of molecular-beam epitaxy growth

    International Nuclear Information System (INIS)

    A brief survey of recent progress in understanding the kinetic roughening in growth models with surface diffusion, which are relevant for growth by molecular-beam epitaxy, in given. The main emphasis is on results of computer simulations. Properties of several different models are described and compared. In particular, results for two models, the Wolf-Villain model (and its modifications) and the full diffusion model, in 1+1, 2+1 and also in higher dimensions are presented. The asymptotic behaviour of the Wolf-Villain model is of an Edwards-Wilkinson type. Both models show an unusual scaling behaviour of the height-height correlation function

  3. Ion-beam assisted laser fabrication of sensing plasmonic nanostructures

    CERN Document Server

    Kuchmizhak, Aleksandr; Vitrik, Oleg; Kulchin, Yuri; Milichko, Valentin; Makarov, Sergey; Kudryashov, Sergey

    2015-01-01

    Simple high-performance two-stage hybrid technique was developed for fabrication of different plasmonic nanostructures, including nanorods, nanorings, as well as more complex structures on glass substrates. In this technique a thin noble metal film on a dielectric substrate is irradiated by a tightly focused single nanosecond laser pulse and then the modified region is slowly polished by an accelerated argon ion (Ar+) beam. As a result, each nanosecond laser pulse locally modifies the initial metal film through initiation of fast melting and subsequent hydrodynamic processes, while the following Ar+-ion polishing removes the rest of the film, revealing the hidden topography features and fabricating separate plasmonic structures on the glass substrate. We demonstrate that the shape and lateral size of the resulting functional plasmonic nanostructures depends on the laser pulse energy and metal film thickness, while subsequent Ar+-ion polishing enables to vary height of the resulting nanostructures. The plasmon...

  4. Deceleration of a continuous-wave(CW)molecular beam with a single quasi-CW semi-Gaussian laser beam

    Institute of Scientific and Technical Information of China (English)

    Yin Ya-Ling; Xia Yong; Yin Jian-Ping

    2008-01-01

    We propose a promising scheme to decelerate a CW molecular beam by using a red-detuned quasi-cw semi-Gaussian laser beam(SGB).We study the dynamical process of the deceleration for a CW deuterated ammonia(ND3)molecular beam by Monte-Carlo simulation method.Our study shows that we can obtain a ND3 molecular beam with a relative average kinetic energy loss of about 10% and a relative output molecular number of more than 90% by using a single quasi-cw SGB with a power of 1.5kW and a maximum optical well depth of 7.33mK.

  5. Bessel beams in tunable acoustic gradient index lenses and optical trap assisted nanolithography

    Science.gov (United States)

    McLeod, Euan

    2009-12-01

    Bessel beams are laser beams whose shape gives them nondiffracting and self-healing properties. They find use in applications requiring a narrow laser beam with a high depth of field. The first part of this thesis presents the study of a new adaptive optical element capable of generating rapidly tunable Bessel beams: the tunable acoustic gradient index (TAG) lens. This device uses piezoelectrically-generated acoustic waves to modulate a fluid's density and refractive index, leading to electrically controllable lensing behavior. Both modeling and experiment are used to explain the observed multiscale Bessel beams. Because the TAG lens operates at frequencies of hundreds of kilohertz, the effective Bessel beam cone angle continuously varies at timescales on the order of microseconds or smaller-orders of magnitude faster than other existing technologies. In addition, the TAG lens may be driven with a Fourier superposition of multiple frequencies, which could enable the generation of arbitrary patterns. The second part of this thesis presents the application of Bessel beams in a new probe-based direct-write optical nanolithography method called optical trap assisted nanolithography (OTAN). When compared to alternative techniques, OTAN makes probe placement and parallelization easier. The method uses Bessel beam optical tweezers to trap dielectric microspheres in close proximity to a surface. These microspheres are then illuminated with pulses from a second laser beam, whose fluence is enhanced directly below the microsphere by focusing and near-field effects to a level great enough to modify the substrate. This technique is used to produce 100 nm features, which are less than lambda/3, and whose sizes agree well with finite-difference time-domain models of the experiment. A demonstration is given of how the technique can be parallelized by trapping multiple microspheres with multiple beams and exposing all spheres in unison with a single pulsed beam. Finally, modeling

  6. Structural and ferroelectric properties of BaTiO 3/YBa 2Cu 3O 7 heterostructures prepared by laser molecular beam epitaxy

    Science.gov (United States)

    Wang, H. S.; Liu, Y. W.; Ma, K.; Peng, Z. Q.; Cui, D. F.; Lu, H. B.; Zhou, Y. L.; Chen, Z. H.; Li, L.; Yang, G. Z.

    1997-08-01

    Heteroepitaxial BaTiO 3(BTO)/YBa 2Cu 3O 7(YBCO) thin films were grown on (100) SrTiO 3(STO) substrates by ozone assistant laser molecular beam epitaxy (L sbnd MBE). The results show that by using this technique, high quality ferroelectric/superconductor heterostructures with high crystalline quality and desirable device performance can be obtained.

  7. Indium-tin-oxide thin film deposited by a dual ion beam assisted e-beam evaporation system

    International Nuclear Information System (INIS)

    Indium-tin-oxide (ITO) thin films were deposited on polycarbonate (PC) substrates at low temperatures (<90 deg. C) by a dual ion beam assisted e-beam evaporation system, where one gun (gun 1) is facing ITO flux and the other gun (gun 2) is facing the substrate. In this experiment, effects of rf power and oxygen flow rate of ion gun 2 on the electrical and optical properties of depositing ITO thin films were investigated. At optimal deposition conditions, ITO thin films deposited on the PC substrates larger than 20 cmx20 cm showed the sheet resistance of less than 40 Ω/sq., the optical transmittance of above 90%, and the uniformity of about 5%

  8. Atmospheric processes on ice nanoparticles in molecular beams

    Directory of Open Access Journals (Sweden)

    Michal eFárník

    2014-02-01

    Full Text Available This review summarizes some recent experiments with ice nanoparticles (large water clusters in molecular beams and outlines their atmospheric relevance: (1 Investigation of mixed water–nitric acid particles by means of the electron ionization and sodium doping combined with photoionization revealed the prominent role of HNO3 molecule as the condensation nuclei. (2 The uptake of atmospheric molecules by water ice nanoparticles has been studied, and the pickup cross sections for some molecules exceed significantly the geometrical sizes of the ice nanoparticles. (3 Photodissociation of hydrogen halides on water ice particles has been shown to proceed via excitation of acidically dissociated ion pair and subsequent biradical generation and H3O dissociation. The photodissociation of CF2Cl2 molecule in clusters is also mentioned. Possible atmospheric consequences of all these results are briefly discussed.

  9. A hydrogen ion beam method of molecular density measurement inside a 4.2-K beam tube

    International Nuclear Information System (INIS)

    In our first experiments on synchrotron radiation-induced photodesorption in a 4.2-K beam tube, the moleculm density was measured by room temperature ion gauges and RGAs outside the beam tube. The molecular density inside the 4.2-K beam tube was therefore unknown, since the mean molecular speed of photodesorbed molecules had not been measured. To determine the density inside the 4.2-K beam tube we have developed a direct method of measurement utilizing the neutralization of H+ beams, which are proportional to gas density. The hydrogen ion beams (up to 20 keV, ∼1 μA) are extracted from an rf ion source and guided into the cold beam tube by a bending magnet. The H0 and H- produced in the beam tube are magnetically separated from H- and detected with secondary electron multipliers (SEMs). Small superconducting dipole magnets located near the center of the beam tube allow a ∼20-cm segment of the injected ion beam to be offset a few mm from the injection axis; detection of H0 and H- produced along this offset segment provides a localized density measurement. If necessary, detector background due to synchrotron radiation photons can be discriminated against by gating the detector on between the bursts of synchrotron radiation. The experimental setup and initial data will be presented

  10. A hydrogen ion beam method of molecular density measurement inside a 4.2-K beam tube

    Energy Technology Data Exchange (ETDEWEB)

    Alinovsky, N.; Anashin, V.; Beschasny, P. [Budker Inst. of Nuclear Physics, Novosibirsk (Russian Federation)] [and others

    1994-06-01

    In our first experiments on synchrotron radiation-induced photodesorption in a 4.2-K beam tube, the moleculm density was measured by room temperature ion gauges and RGAs outside the beam tube. The molecular density inside the 4.2-K beam tube was therefore unknown, since the mean molecular speed of photodesorbed molecules had not been measured. To determine the density inside the 4.2-K beam tube we have developed a direct method of measurement utilizing the neutralization of H{sup +} beams, which are proportional to gas density. The hydrogen ion beams (up to 20 keV, {approximately}1 {mu}A) are extracted from an rf ion source and guided into the cold beam tube by a bending magnet. The H{sup 0} and H{sup {minus}} produced in the beam tube are magnetically separated from H{sup {minus}} and detected with secondary electron multipliers (SEMs). Small superconducting dipole magnets located near the center of the beam tube allow a {approximately}20-cm segment of the injected ion beam to be offset a few mm from the injection axis; detection of H{sup 0} and H{sup {minus}} produced along this offset segment provides a localized density measurement. If necessary, detector background due to synchrotron radiation photons can be discriminated against by gating the detector on between the bursts of synchrotron radiation. The experimental setup and initial data will be presented.

  11. Molecular beam photoionization and gas-surface scattering

    International Nuclear Information System (INIS)

    The energetics of the ethylene ion-molecule reactions was investigated in more detail than previously possible in two body collision experiments by photoionization of the neutral van der Waals ethylene dimer. The stability of the (C2H4)+C2H4 ion-molecule collision complex has been determined to be 18.2 +- 0.5 kcal. The highest potential barriers along the reaction coordinate for decomposition of this collision complex into C4H7+ + H and C3H5+ + CH3 have been determined to be 0 +- 1.5 and 8.7 +- 1.5 kcal. In a similar manner, the energetics of the solvated ethylene dimer ion was investigated by the photoionization of the ethylene trimer. The absolute proton affinity of NH3 (203.6 +- 1.3 kcal/mole) and the proton solvation energies by more than one NH3 have been determined by molecular beam photoionization. In addition, the NH3+-NH3 interaction energy (0.79 +- 0.05 eV) was measured by photoionization of the neutral van der Waals dimer. These experiments have shown that photoionization of van der Waals clusters is a very powerful method of determining the energetics of gas phase proton solvation. The scattering of helium atomic beams from a high Miller index platinum surface that exhibits ordered, periodic steps on the atomic scale to probe the effect of atomic steps on the scattering distribution is explored. Rainbow scattering is observed when the step edges are perpendicular to the incident helium atoms. The design, construction and operation of a beam-surface scattering apparatus are described. The first data obtained in this apparatus are presented and the interesting dynamical aspects of the oxidation of D, D2 and CO are discussed. 75 references

  12. Hexagonal Boron Nitride Tunnel Barriers Grown on Graphite by High Temperature Molecular Beam Epitaxy

    Science.gov (United States)

    Cho, Yong-Jin; Summerfield, Alex; Davies, Andrew; Cheng, Tin S.; Smith, Emily F.; Mellor, Christopher J.; Khlobystov, Andrei N.; Foxon, C. Thomas; Eaves, Laurence; Beton, Peter H.; Novikov, Sergei V.

    2016-01-01

    We demonstrate direct epitaxial growth of high-quality hexagonal boron nitride (hBN) layers on graphite using high-temperature plasma-assisted molecular beam epitaxy. Atomic force microscopy reveals mono- and few-layer island growth, while conducting atomic force microscopy shows that the grown hBN has a resistance which increases exponentially with the number of layers, and has electrical properties comparable to exfoliated hBN. X-ray photoelectron spectroscopy, Raman microscopy and spectroscopic ellipsometry measurements on hBN confirm the formation of sp2-bonded hBN and a band gap of 5.9 ± 0.1 eV with no chemical intermixing with graphite. We also observe hexagonal moiré patterns with a period of 15 nm, consistent with the alignment of the hBN lattice and the graphite substrate. PMID:27681943

  13. Composition control of quinary GaInNAsSb alloy grown by molecular beam epitaxy

    Energy Technology Data Exchange (ETDEWEB)

    Miyashita, Naoya; Ahsan, Nazmul; Okada, Yoshitaka [Research Center for Advanced Science and Technology (RCAST), The University of Tokyo, 4-6-1 Komaba, Meguro-ku, Tokyo 153-8904 (Japan); Islam, Muhammad Monirul [Institute of Applied Physics, University of Tsukuba, 1-1-1 Tennodai, Tsukuba, Ibaraki 305-8573 (Japan)

    2013-11-15

    In order to precisely control the composition of quinary GaInNAsSb alloy, we investigated the incorporation behavior of constituent atoms during atomic hydrogen-assisted molecular beam epitaxial growth. The nitrogen (N) composition, in comparison of GaNAs and GaNAsSb, increased by the supply of antimony (Sb). However, addition of indium (In) decreases the N composition during Sb mediated growth of GaInNAsSb, which enables obtaining the same N composition when an adequate In composition is chosen. It was revealed that Sb incorporation was increased when (i) In composition decreased, (ii) Sb flux increased, (iii) growth temperature decreased, and (iv) growth rate increased. These results are thought to be related to the effect of competitive role among strain, coverage, desorption, and segregation. (copyright 2013 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  14. Thermal stability of CdZnO thin films grown by molecular-beam epitaxy

    International Nuclear Information System (INIS)

    CdZnO thin films with near-band-edge (NBE) photoluminescence (PL) emission from 2.39 eV to 2.74 eV were grown by plasma-assisted molecular-beam epitaxy on c-plane sapphire substrates with 800 deg. C in situ annealing. CdZnO thin films evolve from pure wurtzite (wz) structure, to mixture of wz and rock-salt (rs) structures confirmed by X-ray diffraction studies. Rapid-thermo-annealing (RTA) was performed on in situ annealed CdZnO samples. Pure wz CdZnO shows insignificant NBE PL peak shift after RTA, while mixture structure CdZnO shows evident blue shifts due to phase change after annealing, indicating the rs phase CdZnO changes to wz phase CdZnO during RTA process.

  15. Microstructure of InxGa1−xN nanorods grown by molecular beam epitaxy

    International Nuclear Information System (INIS)

    Transmission electron microscopy is used to examine the structure and composition of InxGa1−xN nanorods grown by plasma-assisted molecular beam epitaxy. The results confirm a core–shell structure with an In-rich core and In-poor shell resulting from axial and lateral growth sectors respectively. Atomic resolution mapping by energy-dispersive x-ray microanalysis and high angle annular dark field imaging show that both the core and the shell are decomposed into Ga-rich and In-rich platelets parallel to their respective growth surfaces. It is argued that platelet formation occurs at the surfaces, through the lateral expansion of surface steps. Studies of nanorods with graded composition show that decomposition ceases for x ≥ 0.8 and the ratio of growth rates, shell:core, decreases with increasing In concentration. (paper)

  16. Characterisation of molecular thin films grown by organic molecular beam deposition

    CERN Document Server

    Bayliss, S M

    2000-01-01

    This work concerns the growth and characterisation of molecular thin films in an ultra high vacuum regime by organic molecular beam deposition (OMBD). Films of three different molecular materials are grown, namely free base phthalocyanine (H sub 2 Pc), perylene 3,4,9,10-tetracarboxylic dianhydride (PTCDA) and aluminium tris-8-hydroxyquinoline (Alq sub 3). The relationship between the growth parameters such as film thickness, growth rate, and substrate temperature during and after growth, and the structural, optical and morphological properties of the film are investigated. These investigations are carried out using various ex-situ techniques. X-ray diffraction, Raman spectroscopy and electronic absorption spectroscopy are used to probe the bulk film characteristics, whilst Nomarski microscopy and atomic force microscopy are used to study the surface morphology. Three different levels of influence of the growth parameters on the film properties are observed. In the case of H sub 2 Pc, two crystal phases are fo...

  17. Ion beam assisted deposition of organic molecules: a physical way to realize OLED structures

    Science.gov (United States)

    Moliton, André; Antony, Rémi; Troadec, David; Ratier, Bernard

    2000-05-01

    We demonstrate how the quantum efficiency of an organic light-emitting diode can be improved by a physical way based on the ion beam assisted deposition: the recombination current can be increased by an enhancement of the minority carrier injection while the total current can be decreased by generation of electron traps which reduced the majority current. The quantum efficiency of fluorescence can be also improved by a layer densification with a limitation of the nonradiative centers. As a result, the quantum efficiency of the structure ITO/Helium assisted Alq3/unassisted Alq3/Ca/Al is improved (by around a factor 10) in relation with a virgin structure.

  18. Development of Ultra Small Shock Tube for High Energy Molecular Beam Source

    Science.gov (United States)

    Miyoshi, Nobuya; Nagata, Shuhei; Kinefuchi, Ikuya; Shimizu, Kazuya; Takagi, Shu; Matsumoto, Yoichiro

    2008-12-01

    A molecular beam source exploiting a small shock tube is described for potential generation of high energy beam in a range of 1-5 eV without any undesirable impurities. The performance of a non-diaphragm type shock tube with an inner diameter of 2 mm was evaluated by measuring the acceleration and attenuation process of shock waves. With this shock tube installed in a molecular beam source, we measured the time-of-flight distributions of shock-heated beams, which demonstrated the ability of controlling the beam energy with the initial pressure ratio of the shock tube.

  19. Photoionization mass spectrometric studies of selected compounds in a molecular beam

    Energy Technology Data Exchange (ETDEWEB)

    Trott, W.M.

    1979-03-01

    Photoionization efficiency curves have been measured at moderate to high resolution for several species produced in supersonic molecular beams of acetone, acetone-d/sub 6/ and CS/sub 2/. The molecular beam photoionization mass spectrometer which has been assembled for this work is described. The performance of this instrument has been characterized by a number of experiments and calculations.

  20. Hardness and stress of amorphous carbon film deposited by glow discharge and ion beam assisting deposition

    CERN Document Server

    Marques, F C

    2000-01-01

    The hardness and stress of amorphous carbon films prepared by glow discharge and by ion beam assisting deposition are investigated. Relatively hard and almost stress free amorphous carbon films were deposited by the glow discharge technique. On the other hand, by using the ion beam assisting deposition, hard films were also obtained with a stress of the same order of those found in tetrahedral amorphous carbon films. A structural analysis indicates that all films are composed of a sp sup 2 -rich network. These results contradict the currently accepted concept that both stress and hardness are only related to the concentration of sp sup 3 sites. Furthermore, the same results also indicate that the sp sup 2 sites may also contribute to the hardness of the films.

  1. Photon-assisted Beam Probes for Low Temperature Plasmas and Installation of Neutral Beam Probe in Helimak

    Science.gov (United States)

    Garcia de Gorordo, Alvaro; Hallock, Gary A.; Kandadai, Nirmala

    2008-11-01

    The Heavy Ion Beam Probe (HIBP) diagnostic has successfully measured the electric potential in a number of major plasma devices in the fusion community. In contrast to a Langmuir probe, the HIBP measures the exact electric potential rather than the floating potential. It is also has the advantage of being a very nonperturbing diagnostic. We propose a new photon-assisted beam probe technique that would extend the HIBP type of diagnostics into the low temperature plasma regime. We expect this method to probe plasmas colder than 10 eV. The novelty of the proposed diagnostic is a VUV laser that ionizes the probing particle. Excimer lasers produce the pulsed VUV radiation needed. The lasers on the market don't have a short enough wavelength too ionize any ion directly and so we calculate the population density of excited states in a NLTE plasma. These new photo-ionization techniques can take an instantaneous one-dimensional potential measurement of a plasma and are ideal for nonmagnitized plasmas where continuous time resolution is not required. Also the status of the Neutral Beam Probe installation on the Helimak experiment will be presented.

  2. Stress in ion-beam assisted silicon dioxide and tantalum pentoxide thin films

    CERN Document Server

    Sirotkina, N

    2003-01-01

    Ta sub 2 O sub 5 and SiO sub 2 thin films, deposited at room temperature by ion-beam sputtering (IBS) and dual ion-beam sputtering (DIBS), and SiO sub 2 films, deposited by reactive e-beam evaporation and ion-assisted deposition, were studied. The energy (150-600 eV) and ion-to-atom arrival ratio (0.27-2.0) of assisting argon and oxygen ions were varied. Influence of deposition conditions (deposition system geometry, nature and amount of gas in the chamber, substrate cleaning and ion-assistance parameters) on films properties (stress, composition, refractive index n sub 5 sub 0 sub 0 sub n sub m and extinction coefficient k sub 5 sub 0 sub 0 sub n sub m) was investigated. A scanning method, based on substrate curvature measurements by laser reflection and stress calculation using the Stoney equation, was employed. RBS showed that stoichiometric Ta sub 2 O sub 5 films contain impurities of Ar, Fe and Mo. Stoichiometric SiO sub 2 films also contain Ta impurity. Argon content increases with ion bombardment and, ...

  3. Laser assisted decay spectroscopy at the CRIS beam line at ISOLDE

    International Nuclear Information System (INIS)

    The new collinear resonant ionization spectroscopy (Cris) experiment at Isolde, Cern uses laser radiation to stepwise excite and ionize an atomic beam for the purpose of ultra-sensitive detection of rare isotopes and hyperfine structure measurements. The technique also offers the ability to purify an ion beam that is contaminated with radioactive isobars, including the ground state of an isotope from its isomer. A new program using the Cris technique to select only nuclear isomeric states for decay spectroscopy commenced last year. The isomeric ion beam is selected using a resonance within its hyperfine structure and subsequently deflected to a decay spectroscopy station. This consists of a rotating wheel implantation system for alpha and beta decay spectroscopy, and up to three high purity germanium detectors for gamma-ray detection. This paper gives an introduction to the Cris technique, the current status of the laser assisted decay spectroscopy set-up and recent results from the experiment in November 2011.

  4. Observation of strong leakage reduction in crystal assisted collimation of the SPS beam

    Energy Technology Data Exchange (ETDEWEB)

    Scandale, W. [CERN, European Organization for Nuclear Research, CH-1211 Geneva 23 (Switzerland); Laboratoire de l' Accelerateur Lineaire (LAL), Universite Paris Sud Orsay, Orsay (France); INFN Sezione di Roma, Piazzale Aldo Moro 2, 00185 Rome (Italy); Arduini, G.; Butcher, M.; Cerutti, F.; Garattini, M.; Gilardoni, S.; Lechner, A.; Losito, R.; Masi, A.; Mereghetti, A.; Metral, E. [CERN, European Organization for Nuclear Research, CH-1211 Geneva 23 (Switzerland); Mirarchi, D. [CERN, European Organization for Nuclear Research, CH-1211 Geneva 23 (Switzerland); Imperial College, London (United Kingdom); Montesano, S.; Redaelli, S. [CERN, European Organization for Nuclear Research, CH-1211 Geneva 23 (Switzerland); Rossi, R. [CERN, European Organization for Nuclear Research, CH-1211 Geneva 23 (Switzerland); INFN Sezione di Roma, Piazzale Aldo Moro 2, 00185 Rome (Italy); Schoofs, P.; Smirnov, G. [CERN, European Organization for Nuclear Research, CH-1211 Geneva 23 (Switzerland); Bagli, E.; Bandiera, L.; Baricordi, S. [INFN Sezione di Ferrara, Dipartimento di Fisica, Università di Ferrara, Ferrara (Italy); and others

    2015-09-02

    In ideal two-stage collimation systems, the secondary collimator–absorber should have its length sufficient to exclude practically the exit of halo particles with large impact parameters. In the UA9 experiments on the crystal assisted collimation of the SPS beam a 60 cm long tungsten bar is used as a secondary collimator–absorber which is insufficient for the full absorption of the halo protons. Multi-turn simulation studies of the collimation allowed to select the position for the beam loss monitor downstream the collimation area where the contribution of particles deflected by the crystal in channeling regime but emerging from the secondary collimator–absorber is considerably reduced. This allowed observation of a strong leakage reduction of halo protons from the SPS beam collimation area, thereby approaching the case with an ideal absorber.

  5. Observation of strong leakage reduction in crystal assisted collimation of the SPS beam

    Directory of Open Access Journals (Sweden)

    W. Scandale

    2015-09-01

    Full Text Available In ideal two-stage collimation systems, the secondary collimator–absorber should have its length sufficient to exclude practically the exit of halo particles with large impact parameters. In the UA9 experiments on the crystal assisted collimation of the SPS beam a 60 cm long tungsten bar is used as a secondary collimator–absorber which is insufficient for the full absorption of the halo protons. Multi-turn simulation studies of the collimation allowed to select the position for the beam loss monitor downstream the collimation area where the contribution of particles deflected by the crystal in channeling regime but emerging from the secondary collimator–absorber is considerably reduced. This allowed observation of a strong leakage reduction of halo protons from the SPS beam collimation area, thereby approaching the case with an ideal absorber.

  6. Observation of strong leakage reduction in crystal assisted collimation of the SPS beam

    Science.gov (United States)

    Scandale, W.; Arduini, G.; Butcher, M.; Cerutti, F.; Garattini, M.; Gilardoni, S.; Lechner, A.; Losito, R.; Masi, A.; Mereghetti, A.; Metral, E.; Mirarchi, D.; Montesano, S.; Redaelli, S.; Rossi, R.; Schoofs, P.; Smirnov, G.; Bagli, E.; Bandiera, L.; Baricordi, S.; Dalpiaz, P.; Germogli, G.; Guidi, V.; Mazzolari, A.; Vincenzi, D.; Claps, G.; Dabagov, S.; Hampai, D.; Murtas, F.; Cavoto, G.; Iacoangeli, F.; Ludovici, L.; Santacesaria, R.; Valente, P.; Galluccio, F.; Afonin, A. G.; Chesnokov, Yu. A.; Durum, A. A.; Maisheev, V. A.; Sandomirskiy, Yu. E.; Yanovich, A. A.; Kovalenko, A. D.; Taratin, A. M.; Gavrikov, Yu. A.; Ivanov, Yu. M.; Lapina, L. P.; Fulcher, J.; Hall, G.; Pesaresi, M.; Raymond, M.

    2015-09-01

    In ideal two-stage collimation systems, the secondary collimator-absorber should have its length sufficient to exclude practically the exit of halo particles with large impact parameters. In the UA9 experiments on the crystal assisted collimation of the SPS beam a 60 cm long tungsten bar is used as a secondary collimator-absorber which is insufficient for the full absorption of the halo protons. Multi-turn simulation studies of the collimation allowed to select the position for the beam loss monitor downstream the collimation area where the contribution of particles deflected by the crystal in channeling regime but emerging from the secondary collimator-absorber is considerably reduced. This allowed observation of a strong leakage reduction of halo protons from the SPS beam collimation area, thereby approaching the case with an ideal absorber.

  7. Enhanced adhesion of Cu-W thin films by ion beam assisting bombardment implanting

    Institute of Scientific and Technical Information of China (English)

    ZHOU Ling-ping; WANG Ming-pu; WANG Rui; LI Zhou; ZHU Jia-jun; PENG Kun; LI De-yi; LI Shao-lu

    2008-01-01

    Cu-W thin film with high W content was deposited by dual-target DC-magnetron co-sputtering technology. Effects of the substrates surface treating technique on the adhesive strength of Cu-W thin films were studied. It is found that the technique of ion beam assisting bombardment implanting of W particles can remarkably improve the adhesive property of Cu-W thin films. Indentation and scratching test show that, the critical load is doubled over than the sample only sputter-cleaned by ion beam. The enhancing mechanism of ion beam assisting bombardment implanting of Cu-W thin films was analyzed. With the help of mid-energy Ar+ ion beam, W atoms can diffuse into the Fe-substrate surface layer; Fe atoms in the substrate surface layer and W atoms interlace with one another; and microcosmic mechanical meshing and diffusing combination on atom-scale among the Fe and W atoms through the film/substrate interface can be formed. The wettability and thermal expansion properties of the W atoms diffusion zone containing plentiful W atoms are close to those of pure W or W-based Cu-W film.

  8. Molecular beam photoionization and gas-surface scattering

    Energy Technology Data Exchange (ETDEWEB)

    Ceyer, S.T.

    1979-09-01

    The energetics of the ethylene ion-molecule reactions was investigated in more detail than previously possible in two body collision experiments by photoionization of the neutral van der Waals ethylene dimer. The stability of the (C/sub 2/H/sub 4/)/sup +/C/sub 2/H/sub 4/ ion-molecule collision complex has been determined to be 18.2 +- 0.5 kcal. The highest potential barriers along the reaction coordinate for decomposition of this collision complex into C/sub 4/H/sub 7//sup +/ + H and C/sub 3/H/sub 5//sup +/ + CH/sub 3/ have been determined to be 0 +- 1.5 and 8.7 +- 1.5 kcal. In a similar manner, the energetics of the solvated ethylene dimer ion was investigated by the photoionization of the ethylene trimer. The absolute proton affinity of NH/sub 3/ (203.6 +- 1.3 kcal/mole) and the proton solvation energies by more than one NH/sub 3/ have been determined by molecular beam photoionization. In addition, the NH/sub 3//sup +/-NH/sub 3/ interaction energy (0.79 +- 0.05 eV) was measured by photoionization of the neutral van der Waals dimer. These experiments have shown that photoionization of van der Waals clusters is a very powerful method of determining the energetics of gas phase proton solvation. The scattering of helium atomic beams from a high Miller index platinum surface that exhibits ordered, periodic steps on the atomic scale to probe the effect of atomic steps on the scattering distribution is explored. Rainbow scattering is observed when the step edges are perpendicular to the incident helium atoms. The design, construction and operation of a beam-surface scattering apparatus are described. The first data obtained in this apparatus are presented and the interesting dynamical aspects of the oxidation of D, D/sub 2/ and CO are discussed. 75 references.

  9. On the Growth of Complex Oxides by Molecular Beam Epitaxy

    Science.gov (United States)

    Fong, Dillon

    Functional materials based on complex oxides in thin film form offer new and exciting strategies for meeting many of our outstanding energy challenges through systematic control of layer sequencing, strain, etc. However, the synthesis of such oxide films can be a major challenge even when utilizing reactive molecular-beam epitaxy (MBE), a powerful deposition technique that allows the construction of materials atomic plane by atomic plane. To understand the fundamental physics of oxide growth by reactive MBE, we present in situ surface x-ray diffraction results on the growth of SrTiO3 and SrO-SrTiO3 thin films on (001)-oriented SrTiO3 substrates. For homoepitaxy, we compare sequential deposition (alternating Sr and Ti monolayer doses) with that of co-deposition of Sr and Ti, both in a background of oxygen pressure, and observe drastically different growth pathways due to the presence of a TiO2 double layer. For heteroepitaxial growth of Ruddlesden-Popper SrO-SrTiO3 films, we find that layers rearrange dynamically, resulting in layer sequences distinct from the shutter sequence. In general, the starting surface structure and composition, in combination with local thermodynamic considerations, strongly influence our ability to atomically construct new complex oxides.

  10. Creating Ruddlesden-Popper phases by hybrid molecular beam epitaxy

    Science.gov (United States)

    Haislmaier, Ryan C.; Stone, Greg; Alem, Nasim; Engel-Herbert, Roman

    2016-07-01

    The synthesis of a 50 unit cell thick n = 4 Srn+1TinO3n+1 (Sr5Ti4O13) Ruddlesden-Popper (RP) phase film is demonstrated by sequentially depositing SrO and TiO2 layers in an alternating fashion using hybrid molecular beam epitaxy (MBE), where Ti was supplied using titanium tetraisopropoxide (TTIP). A detailed calibration procedure is outlined for determining the shuttering times to deposit SrO and TiO2 layers with precise monolayer doses using in-situ reflection high energy electron diffraction (RHEED) as feedback. Using optimized Sr and TTIP shuttering times, a fully automated growth of the n = 4 RP phase was carried out over a period of >4.5 h. Very stable RHEED intensity oscillations were observed over the entire growth period. The structural characterization by X-ray diffraction and high resolution transmission electron microscopy revealed that a constant periodicity of four SrTiO3 perovskite unit cell blocks separating the double SrO rocksalt layer was maintained throughout the entire film thickness with a very little amount of planar faults oriented perpendicular to the growth front direction. These results illustrate that hybrid MBE is capable of layer-by-layer growth with atomic level precision and excellent flux stability.

  11. Perspective: Rapid synthesis of complex oxides by combinatorial molecular beam epitaxy

    Science.gov (United States)

    Bollinger, A. T.; Wu, J.; Božović, I.

    2016-05-01

    The molecular beam epitaxy (MBE) technique is well known for producing atomically smooth thin films as well as impeccable interfaces in multilayers of many different materials. In particular, molecular beam epitaxy is well suited to the growth of complex oxides, materials that hold promise for many applications. Rapid synthesis and high throughput characterization techniques are needed to tap into that potential most efficiently. We discuss our approach to doing that, leaving behind the traditional one-growth-one-compound scheme and instead implementing combinatorial oxide molecular beam epitaxy in a custom built system.

  12. Formation of slow molecules in chemical reactions in crossed molecular beams

    Science.gov (United States)

    Tscherbul, T. V.; Barinovs, Ğ.; Kłos, J.; Krems, R. V.

    2008-08-01

    We demonstrate that chemical reactions in collisions of molecular beams can generally produce low-velocity molecules in the laboratory-fixed frame. Our analysis shows that collisions of beams may simultaneously yield slow reactant molecules and slow products. The reaction products are formed in selected rovibrational states and scattered in a specific direction, which can be controlled by tuning the kinetic energies of the incident beams and the angle between the beams. Our calculations indicate that chemical reactions of polar alkali-metal dimers are barrierless and we suggest that chemical reactions involving alkali-metal dimers may be particularly suitable for producing slow molecules in crossed beams.

  13. Metallic impurities in gallium nitride grown by molecular beam epitaxy

    Energy Technology Data Exchange (ETDEWEB)

    McHugo, S.A.; Krueger, J.; Kisielowski, C. [Lawrence Berkeley National Lab., CA (United States)] [and others

    1997-04-01

    Transition metals are often encountered in trace amounts in semiconductors. They have been extensively studied in most elemental and compound systems, since they form deep donor and/or acceptor levels which usually degrade the electronic and optical material properties. Only very little is known about transition metals in recent III-V semiconducting materials, such as GaN, AlN and InN. These few studies have been done exclusively on Metal-Organic Chemical Vapor Deposition (MOCVD) or Hybrid Vapor Phase Epitaxy HVPE-grown GaN. Preliminary x-ray fluorescence studies at the Advanced Light Source, beamline 10.3.1, Lawrence Berkeley National Laboratory have revealed that GaN materials grown by Molecular Beam Epitaxy (MBE) have Fe, Ni and Cr as the dominant transition metal contaminants. This finding is commensurate with the extremely high concentrations of hydrogen, carbon and oxygen (up to 10{sup 20} cm{sup {minus}3}) measured by Secondary Ion Mass Spectroscopy (SIMS). Preliminary work using the mapping capabilities of the x-ray fluorescence microprobe revealed the metal impurities were inhomogeneously distributed over the film. Future work of this collaboration will be to find a correlation between the existence of transition metals in MBE films, as revealed by x-ray fluorescence, and Photoluminescence (PL) spectra taken in the infrared region. Also, the authors will make use of the 1 {mu}m spatial resolution of x-ray microprobe to locate the contaminants in relation to structural defects in the GaN films. Because of the large strain caused by the lattice mismatch between the GaN films and the substrates, the films grow in a columnar order with high densities of grain boundaries and dislocations. These structural defects offer preferential sites for metal precipitation or agglomeration which could degrade the optical properties of this material more so than if the impurities were left dissolved in the GaN.

  14. Measurement of the density profile of pure and seeded molecular beams by femtosecond ion imaging.

    Science.gov (United States)

    Meng, Congsen; Janssen, Maurice H M

    2015-02-01

    Here, we report on femtosecond ion imaging experiments to measure the density profile of a pulsed supersonic molecular beam. Ion images are measured for both a molecular beam and bulk gas under identical experimental conditions via femtosecond multiphoton ionization of Xe atoms. We report the density profile of the molecular beam, and the measured absolute density is compared with theoretical calculations of the centre line beam density. Subsequently, we discuss reasons accounting for the differences between measurements and calculations and propose that strong skimmer interference is the most probable cause for the differences. Furthermore, we report on experiments measuring the centre line density of seeded supersonic beams. The femtosecond ion images show that seeding the heavy Xe atom at low relative seed fractions (1%-10%) in a light carrier gas like Ne results in strong relative enhancements of up to two orders of magnitude. PMID:25725826

  15. Irradiation-Assisted Stress-Corrosion Cracking of Nitinol During eBeam Sterilization

    Science.gov (United States)

    Smith, Stuart A.; Gause, Brock; Plumley, David; Drexel, Masao J.

    2012-12-01

    Medical device fractures during gamma and electron beam (eBeam) sterilization have been reported. Two common factors in these device fractures were a constraining force and the presence of fluorinated ethylene propylene (FEP). This study investigated the effects of eBeam sterilization on constrained light-oxide nitinol wires in FEP. The goal was to recreate these fractures and determine their root cause. Superelastic nitinol wires were placed inside FEP tubes and constrained with nominal outer fiber strains of 10, 15, and 20%. These samples were then subjected to a range of eBeam sterilization doses up to 400 kGy and compared with unconstrained wires also subjected to sterilization. Fractures were observed at doses of >100 kGy. Analysis of the fracture surfaces indicated that the samples failed due to irradiation-assisted stress-corrosion cracking (IASCC). This same effect was also observed to occur with PTFE at 400 kGy. These results suggest that nitinol is susceptible to IASCC when in the presence of a constraining stress, fluorinated polymers, and irradiation.

  16. Electron beam assisted synthesis of silver nanoparticle in chitosan stabilizer: Preparation, stability and inhibition of building fungi studies

    International Nuclear Information System (INIS)

    Silver nanoparticles (AgNPs) in chitosan (CS) stabilizer were successfully synthesized using electron beam irradiation. The effects of irradiation dose, molecular weight (MW) of CS stabilizer, concentration of AgNO3 precursor and addition of tert-butanol on AgNPs production were studied. The stability of the AgNPs under different temperatures and storage times were also investigated. The AgNPs formation in CS was observed using UV–vis, FT-IR and XRD. The characteristic surface plasmon resonance (SPR) of the obtained AgNPs was around 418 nm. The CS stabilizer and its MW, AgNO3 precursor and irradiation doses are important parameters for the synthesis of AgNPs. The optimum addition of 20% v/v tert-butanol could assist the formation of AgNPs. The AgNPs in CS stabilizer were stable over a period of one year when the samples were kept at 5 °C. The AgNPs observed from TEM images were spherical with an average particle size in the range of 5–20 nm depending on the irradiation doses. The AgNPs in CS solution effectively inhibited the growth of several fungi, i.e., Curvularia lunata, Trichoderma sp., Penicillium sp. and Aspergillus niger, which commonly found on the building surface. - Highlights: • Electron beam efficiently assists the synthesis of AgNPs. • AgNPs are spherical with the size of 5–20 nm. • AgNPs formation can be controlled by dose, chitosan, Ag+ content and t-BuOH • AgNPs in chitosan are stable at 5 °C over a year. • AgNPs in chitosan inhibit the growth of building fungi

  17. Microanalyses of the hydroxyl-poly-calcium sodium phosphate coatings produced by ion beam assisted deposition

    Institute of Scientific and Technical Information of China (English)

    2002-01-01

    Thin calcium phosphate coatings on titanium alloy substrates wereprepared by Ar+ ion beam assisted deposition (IBAD) from hydroxyl-poly-calciumsodium phosphate (HPPA) target. The coatings were analyzed by XRD, FTIR, XPS.These analyses revealed that the as-deposited films were amorphous or no apparentcrystallinity. No distinct absorption band of the hydroxyl group was observed in FTIRspectra of the coatings but new absorption bands were presented for CO3-2. Thecalcium to phosphorous ratio of these coatings in different IBAD conditions variedfrom 0.46 to 3.36.

  18. Microanalyses of the hydroxyl—poly—calcium sodium phosphate coatings produced by ion beam assisted deposition

    Institute of Scientific and Technical Information of China (English)

    LIUZhong-Yang; WANGChang-Xing; 等

    2002-01-01

    Thin calcium phosphate catings on titanium alloy substrates were prepared by Ar+ ion beam assisted deposition(IBAD) from hydroxyl-poly-calcium sodium phosphate(HPPA) target.The coatings were analyzed by XRD,FTIR,XPS,These analyses revealed that the as-deposited films were amorphous or no apparent crystallinity.No distinct absorption band of the hydroxyl group was observed in FTIR spectra of the coatings but new absorption bands were presented for CO3-2,The calcium to phosphorous ratio of these catings in different IBAD conditions varied from 0.46 to 3.36.

  19. Ion and electron beam assisted fabrication of nanostructures integrated in microfluidic chips

    International Nuclear Information System (INIS)

    In present work we have designed and fabricated microfluidic chips (MFC) with integrated nets of nanochannels and whisker nanostructures in microchannels for investigation of biological samples in their native environment. We have designed a number of MFC topologies: (a) hydrodynamic traps with nanoscale channels which link microchannels; (b) a structure with regular vertical nanorod (nanowhisker) array, which could be used as a sensitive element. These topologies were created by means of ion and electron beam assisted techniques. These MFCs allow to investigate biological objects by means of high resolution microscopy. Fabricated MFCs were investigated with emulator of biological objects in different buffer solutions.

  20. An orientation competition in yttria-stabilized zirconia thin films fabricated by ion beam assisted sputtering deposition

    International Nuclear Information System (INIS)

    A previously found orientation competition in ion beam sputtered yttria-stabilized zirconia thin films was studied in detail. The effects of sputtering energy and deposition angle were analyzed in ion sputtered films without assisting ions bombardment. It is found that for normally deposited films, (001) and (011) orientations are favored at low and high sputtering energy respectively. For inclined substrate deposited films, as deposition angle increases, (001), (011) and (111) orientations are advantaged in turn. The results can be attributed to the in-plane energy exchange of deposition atom and adatoms. In ion beam assisting deposited YSZ films of low assisting ions energy and current, a (001) oriented biaxial texture is gradually induced as ion energy increased. In the case of ion beam assisted inclined deposition of 45°, (001) orientation is enhanced and two preferential in-plane orientations are found coexist.

  1. Internal Energy Dependence of Molecular Condensation Coefficients Determined from Molecular Beam Surface Scattering Experiments

    Science.gov (United States)

    Sibener, S. J.; Lee, Y. T.

    1978-05-01

    An experiment was performed which confirms the existence of an internal mode dependence of molecular sticking probabilities for collisions of molecules with a cold surface. The scattering of a velocity selected effusive beam of CCl{sub 4} from a 90 K CC1{sub 4} ice surface has been studied at five translational velocities and for two different internal temperatures. At a surface temperature of 90 K (approx. 99% sticking probability) a four fold increase in reflected intensity was observed for the internally excited (560 K) CC1{sub 4} relative to the room temperature (298 K) CC1{sub 4} at a translational velocity of 2.5 X 10{sup 4} cm/sec. For a surface temperature of 90 K all angular distributions were found to peak 15{sup 0} superspecularly independent of incident velocity.

  2. Internal energy dependence of molecular condensation coefficients determined from molecular beam surface scattering experiments

    International Nuclear Information System (INIS)

    An experiment was performed which confirms the existence of an internal mode dependence of molecular sticking probabilities for collisions of molecules with a cold surface. The scattering of a velocity selected effusive beam of CCl4 from a 90 K CC14 ice surface has been studied at five translational velocities and for two different internal temperatures. At a surface temperature of 90 K (approx. 99% sticking probability) a four fold increase in reflected intensity was observed for the internally excited (560 K) CC14 relative to the room temperature (298 K) CC14 at a translational velocity of 2.5 X 104 cm/sec. For a surface temperature of 90 K all angular distributions were found to peak 150 superspecularly independent of incident velocity. 9 references

  3. Manipulation and analysis of atomic and molecular beams using transmission gratings and Fresnel zone plates

    Energy Technology Data Exchange (ETDEWEB)

    Grisenti, R.E.

    2000-06-01

    In this thesis experimental results on the diffraction of rare gas atoms (He, Ne, Ar, Kr) and molecular (D{sub 2}) beams by a 100 nm period transmission grating and on the focusing of a helium atom beam through a Fresnel zone plate have been reported. (orig.)

  4. Crossed molecular beam studies of atmospheric chemical reaction dynamics

    Energy Technology Data Exchange (ETDEWEB)

    Zhang, Jingsong

    1993-04-01

    The dynamics of several elementary chemical reactions that are important in atmospheric chemistry are investigated. The reactive scattering of ground state chlorine or bromine atoms with ozone molecules and ground state chlorine atoms with nitrogen dioxide molecules is studied using a crossed molecular beams apparatus with a rotatable mass spectrometer detector. The Cl + O{sub 3} {yields} ClO + O{sub 2} reaction has been studied at four collision energies ranging from 6 kcal/mole to 32 kcal/mole. The derived product center-of-mass angular and translational energy distributions show that the reaction has a direct reaction mechanism and that there is a strong repulsion on the exit channel. The ClO product is sideways and forward scattered with respect to the Cl atom, and the translational energy release is large. The Cl atom is most likely to attack the terminal oxygen atom of the ozone molecule. The Br + O{sub 3} {yields} ClO + O{sub 2} reaction has been studied at five collision energies ranging from 5 kcal/mole to 26 kcal/mole. The derived product center-of-mass angular and translational energy distributions are quite similar to those in the Cl + O{sub 3} reaction. The Br + O{sub 3} reaction has a direct reaction mechanism similar to that of the Cl + O{sub 3} reaction. The electronic structure of the ozone molecule seems to play the central role in determining the reaction mechanism in atomic radical reactions with the ozone molecule. The Cl + NO{sub 2} {yields} ClO + NO reaction has been studied at three collision energies ranging from 10.6 kcal/mole to 22.4 kcal/mole. The center-of-mass angular distribution has some forward-backward symmetry, and the product translational energy release is quite large. The reaction proceeds through a short-lived complex whose lifetime is less than one rotational period. The experimental results seem to show that the Cl atom mainly attacks the oxygen atom instead of the nitrogen atom of the NO{sub 2} molecule.

  5. Recent advances in biological effect and molecular mechanism of arabidopsis thaliana irradiated by ion beams

    International Nuclear Information System (INIS)

    Newly research progresses were summarized in effect of ion beams on seed surface, biological effect, growth, development, gravitropism and so on. Furthermore, mutation molecular mechanism of Arabidopsis thaliana was discussed, for example, alteration of DNA bases, DNA damage, chromosomal recombination, characteristics of mutant transmissibility, etc. Meanwhile, the achievements of transfer- ring extraneous gene to Arabidopsis thaliana by ion beams were reviewed in the paper. At last, the future prospective are also discussed here in mutation molecular mechanism and the potential application of biological effect of heavy ion beams. (authors)

  6. Shaping of intensive secondary pulsed molecular beam and production of accelerated molecules and radicals in it

    CERN Document Server

    Makarov, G N

    2001-01-01

    The method is described for shaping the intensive secondary pulsed molecular beam, wherein the molecules kinetic energy may be controlled through the powerful IR laser radiation by means of the molecules oscillatory excitation in the source itself. The thickening jump (the shock wave), which is formed by interaction of the intensive pulsed supersonic molecular beam (or flux) with a solid surface, is used as the secondary beam source. The intensive (>= 10 sup 2 sup 0 molecules/stere. s) beams of the SF sub 6 and CF sub 3 I molecules with the kinetic energy correspondingly equal to approximately 1.5 eV and 1.2 eV without gas-carrier and molecular SF sub 6 beams with kinetic energy approx = 2.5 eV are obtained. The spectral and energy characteristics of the SF sub 6 molecules acceleration in the secondary beam are studied. The possibility of obtaining the accelerated radicals in the secondary molecular beam is indicated

  7. Transport properties of modulation-doped structures grown by molecular beam epitaxy after focused ion beam implantation

    International Nuclear Information System (INIS)

    Modulation-doped structures are grown by molecular beam epitaxy after focused ion beam writing. The growth and implantation chambers are connected in a high vacuum to minimize the effect of growth interruption. The electron channel is drastically depleted by the buried Be+ implanted region, but only slightly depleted by the buried Au+ and Au2+ implanted regions. This is because Be+ implantation forms a p-type material, while Au+ or Au2+ implantation leaves damage only in the n-type material. Be+ implantation is therefore used to fabricate 0.1 μm-wide wires with electron mobility of 2.1x105 cm2/Vs. (author)

  8. Dynamics of infrared multiphonon dissociation of SF6 by molecular beam method

    International Nuclear Information System (INIS)

    A crossed molecular beam apparatus has been adapted to study the dynamics of excitation and dissociation of polyatomic molecules in intense IR laser fields. Initial experiments have involved the study of the dissociation of SF6 by CO2 laser radiation at 10.6 μm. A molecular beam of SF6 was formed by supersonic expansion using three stages of differential pumping. A grating tuned pulsed CO2 TEA laser was used as the excitation source. The laser beam was focused by a 25 cm focal length ZnSe lens, and crossed the molecular beam near its focal point. The fragments produced by multiphonon dissociation of SF6 within the small interaction region were detected as a function of recoil angle and velocity. (Auth.)

  9. Molecular beam epitaxy of InN dots on nitrided sapphire

    Energy Technology Data Exchange (ETDEWEB)

    Romanyuk, Yaroslav E.; Dengel, Radu-Gabriel; Stebounova, LarissaV.; Leone, Stephen R.

    2007-04-20

    A series of self-assembled InN dots are grown by radio frequency (RF) plasma-assisted molecular beam epitaxy (MBE) directly on nitrided sapphire. Initial nitridation of the sapphire substrates at 900 C results in the formation of a rough AlN surface layer, which acts as a very thin buffer layer and facilitates the nucleation of the InN dots according to the Stranski-Krastanow growth mode, with a wetting layer of {approx}0.9 nm. Atomic force microscopy (AFM) reveals that well-confined InN nanoislands with the greatest height/width at half-height ratio of 0.64 can be grown at 460 C. Lower substrate temperatures result in a reduced aspect ratio due to a lower diffusion rate of the In adatoms, whereas the thermal decomposition of InN truncates the growth at T>500 C. The densities of separated dots vary between 1.0 x 10{sup 10} cm{sup -2} and 2.5 x 10{sup 10} cm{sup -2} depending on the growth time. Optical response of the InN dots under laser excitation is studied with apertureless near-field scanning optical microscopy and photoluminescence spectroscopy, although no photoluminescence is observed from these samples. In view of the desirable implementation of InN nanostructures into photonic devices, the results indicate that nitrided sapphire is a suitable substrate for growing self-assembled InN nanodots.

  10. Semiconductor-ferromagnet core-shell nanowires grown by molecular beam epitaxy

    Energy Technology Data Exchange (ETDEWEB)

    Hilse, Maria; Takagaki, Yukihiko; Herfort, Jens; Herrmann, Claudia; Ramsteiner, Manfred; Breuer, Steffen; Geelhaar, Lutz; Riechert, Henning [Paul-Drude-Institut fuer Festkoerperelektronik, Berlin (Germany)

    2010-07-01

    The special geometry of nanowires (NWs) offers the possibility to elastically absorb lattice mismatch strain. Thus, axial and radial NW heterostructures consisting of dissimilar materials can be grown with high quality. In addition, spin dependent functionalities are introduced to NW devices when a ferromagnet is incorporated into these heterostructures. MnAs is one of the attractive materials as it is ferromagnetic at room temperature (the Curie temperature is about 40 C). In this work, we combine GaAs and MnAs in a NW core-shell geometry by means of molecular beam epitaxy (MBE). The GaAs NWs were grown using the Au-assisted vapor-liquid-solid mechanism on GaAs(111)B substrates. The MnAs growth took place under the typical conditions for planar growth on GaAs. A curving of the NWs is observed if the sample stage is not rotated during MnAs overgrowth, evidencing the diffusion length of Mn being less than the perimeter of the NWs. By analyzing the planar film and NW shell thicknesses, we demonstrate the MnAs growth to take place by direct deposition on the NW sidewalls. NWs exhibit a hexagonal cross section indicating the c-axis, i.e., the magnetic hard axis of MnAs to be parallel to the NW axis. This orientation is confirmed by magnetization measurements and magnetic-force microscopy.

  11. The competing oxide and sub-oxide formation in metal-oxide molecular beam epitaxy

    Energy Technology Data Exchange (ETDEWEB)

    Vogt, Patrick; Bierwagen, Oliver [Paul-Drude-Institut für Festkörperelektronik, Hausvogteiplatz 5-7, D-10117 Berlin (Germany)

    2015-02-23

    The hetero-epitaxial growth of the n-type semiconducting oxides β-Ga{sub 2}O{sub 3}, In{sub 2}O{sub 3}, and SnO{sub 2} on c- and r-plane sapphire was performed by plasma-assisted molecular beam epitaxy. The growth-rate and desorbing flux from the substrate were measured in-situ under various oxygen to metal ratios by laser reflectometry and quadrupole mass spectrometry, respectively. These measurements clarified the role of volatile sub-oxide formation (Ga{sub 2}O, In{sub 2}O, and SnO) during growth, the sub-oxide stoichiometry, and the efficiency of oxide formation for the three oxides. As a result, the formation of the sub-oxides decreased the growth-rate under metal-rich growth conditions and resulted in etching of the oxide film by supplying only metal flux. The flux ratio for the exclusive formation of the sub-oxide (e.g., the p-type semiconductor SnO) was determined, and the efficiency of oxide formation was found to be the highest for SnO{sub 2}, somewhat lower for In{sub 2}O{sub 3}, and the lowest for Ga{sub 2}O{sub 3}. Our findings can be generalized to further oxides that possess related sub-oxides.

  12. Infrared and ion beam analysis of SI/sub x/N/sub 1-x/ alloys grown by ion beam assisted deposition

    International Nuclear Information System (INIS)

    Thin films of amorphous Si/sub x/N/sub 1-x/ alloys were produced by nitrogen ion beam assisted deposition of electron beam evaporated silicon. Infrared reflection spectra were measured in the range 600 to 10000 cm/sup -1/. Fringes were observed due to interference between light multiply-reflected from the front surface and film-substrate (single crystal silicon) interface. Similar measurements were performed on films crystallized by post-deposition furnace anneals. Analyses of the reflection spectra were used to obtain refractive index profiles. Profiles were correlated with nitrogen content as measured by Rutherford Backscattering Spectometry (RBS) and Auger Electron Spectroscopy (AES). Film adhesion, density, and purity were found to be improved for depositions assisted by nitrogen ion beams (1000 to 25,000 eV) relative to unassisted evaporation, and the index of refraction decreases monotonically with increasing nitrogen content

  13. Production of radioactive molecular beams for CERN-ISOLDE

    CERN Document Server

    AUTHOR|(SzGeCERN)703149; Kröll, Thorsten

    SOLDE, the Isotope Separation On-Line facility, at CERN is a leading facility for the production of beams of exotic radioactive isotopes. Currently over 1000 different isotopes with half lives down to milliseconds can be extracted with beam intensities of up to 10^11 ions per second. However, due to the reactive target environment not all isotopes are extractable in sufficient amounts. In this work the extraction of short lived carbon and boron isotopes is investigated. Therefore a variety of experimental and computanional techniques have been used.

  14. Production of radioactive molecular beams for CERN-ISOLDE

    Energy Technology Data Exchange (ETDEWEB)

    Seiffert, Christoph

    2015-06-15

    ISOLDE, the Isotope Separation On-Line facility, at CERN is a leading facility for the production of beams of exotic radioactive isotopes. Currently over 1000 different isotopes with half lives down to milliseconds can be extracted with beam intensities of up to 10{sup 11} ions per second. However, due to the reactive target environment not all isotopes are extractable in sufficient amounts. In this work the extraction of short lived carbon and boron isotopes is investigated. Therefore a variety of experimental and computational techniques have been used.

  15. Production of radioactive molecular beams for CERN-ISOLDE

    International Nuclear Information System (INIS)

    ISOLDE, the Isotope Separation On-Line facility, at CERN is a leading facility for the production of beams of exotic radioactive isotopes. Currently over 1000 different isotopes with half lives down to milliseconds can be extracted with beam intensities of up to 1011 ions per second. However, due to the reactive target environment not all isotopes are extractable in sufficient amounts. In this work the extraction of short lived carbon and boron isotopes is investigated. Therefore a variety of experimental and computational techniques have been used.

  16. Methods for assisting recovery of damaged brain and spinal cord using arrays of X-ray microplanar beams

    Energy Technology Data Exchange (ETDEWEB)

    Dilmanian, F. Avraham; McDonald, III, John W.

    2007-01-02

    A method of assisting recovery of an injury site of brain or spinal cord injury includes providing a therapeutic dose of X-ray radiation to the injury site through an array of parallel microplanar beams. The dose at least temporarily removes regeneration inhibitors from the irradiated regions. Substantially unirradiated cells surviving between the microplanar beams migrate to the in-beam irradiated portion and assist in recovery. The dose may be administered in dose fractions over several sessions, separated in time, using angle-variable intersecting microbeam arrays (AVIMA). Additional doses may be administered by varying the orientation of the microplanar beams. The method may be enhanced by injecting stem cells into the injury site.

  17. Methods for assisting recovery of damaged brain and spinal cord using arrays of X-Ray microplanar beams

    Science.gov (United States)

    Dilmanian, F. Avraham; McDonald, III, John W.

    2007-12-04

    A method of assisting recovery of an injury site of brain or spinal cord injury includes providing a therapeutic dose of X-ray radiation to the injury site through an array of parallel microplanar beams. The dose at least temporarily removes regeneration inhibitors from the irradiated regions. Substantially unirradiated cells surviving between the microplanar beams migrate to the in-beam irradiated portion and assist in recovery. The dose may be administered in dose fractions over several sessions, separated in time, using angle-variable intersecting microbeam arrays (AVIMA). Additional doses may be administered by varying the orientation of the microplanar beams. The method may be enhanced by injecting stem cells into the injury site.

  18. Growth of GaNAs/GaAs multiple quantum well by molecular beam epitaxy using modulated N radical beam source

    International Nuclear Information System (INIS)

    GaNAs/GaAs multiple quantum well (MQW) structures have been grown on GaAs(001) substrates by molecular beam epitaxy (MBE) using modulated N radical beam source under optimized conditions, wherein the amount of N2 gas flow, RF-power and shutter sequence are systematically controlled. Clear and flat GaNAs/GaAs interfaces were observed in the cross-sectional transmission electron microscopy (TEM) measurements. Fine MQW structures originating from the precise control of the modulated N radical beam have been demonstrated as clear satellite peaks from the X-ray diffraction (XRD) measurements and sharp photoluminescence (PL) peaks. The step-like behaviors in the absorption spectra which reflect the density of state in two-dimensional systems, were clearly observed for all MQW samples. (authors)

  19. Continuous electropolishing of Hastelloy substrates for ion-beam assisted deposition of MgO

    Energy Technology Data Exchange (ETDEWEB)

    Kreiskott, Sascha; Arendt, Paul N; Bronisz, Lawrence E; Foltyn, Steve R; Matias, Vladimir [Superconductivity Technology Center, Los Alamos National Laboratory, Los Alamos, NM 87545 (United States)

    2003-05-01

    We demonstrate the applicability of continuous electropolishing for the preparation of metal tapes for ion-beam assisted deposition of MgO for the fabrication of in-plane textured template layers. These templates are used for the fabrication of second generation high temperature superconducting wires utilizing YBa{sub 2}Cu{sub 3}O{sub 7-{delta}} coatings on metallic substrates. Surface roughness values below 1 nm and local slopes of less than 1 deg. could be achieved with the electropolishing process. Mean surface roughness values are lower with the use of electropolishing and slopes of surface roughness inclines are significantly reduced compared to the best results of mechanical polishing (3.5 nm and 5 deg., respectively). The cost-effective process of electropolishing shows great promise for the fabrication of second generation high temperature superconducting wire.

  20. Continuous electropolishing of Hastelloy substrates for ion-beam assisted deposition of MgO

    International Nuclear Information System (INIS)

    We demonstrate the applicability of continuous electropolishing for the preparation of metal tapes for ion-beam assisted deposition of MgO for the fabrication of in-plane textured template layers. These templates are used for the fabrication of second generation high temperature superconducting wires utilizing YBa2Cu3O7-δ coatings on metallic substrates. Surface roughness values below 1 nm and local slopes of less than 1 deg. could be achieved with the electropolishing process. Mean surface roughness values are lower with the use of electropolishing and slopes of surface roughness inclines are significantly reduced compared to the best results of mechanical polishing (3.5 nm and 5 deg., respectively). The cost-effective process of electropolishing shows great promise for the fabrication of second generation high temperature superconducting wire

  1. Optimization of Energy Scope for Titanium Nitride Films Grown by Ion Beam-Assisted Deposition

    Institute of Scientific and Technical Information of China (English)

    LI Wei; MA Zhong-Quan; WANG Ye; WANG De-Ming

    2006-01-01

    The deposited energy during film growth with ion bombardment, correlated to the atomic displacement on the surface monolayer and the underlying bulk, has been calculated by a simplified ion-solid interaction model under binary collision approximation. The separated damage energies caused by Ar ion, different for the surface and the bulk, have been determined under the standard collision cross section and a well-defined surface and bulk atom displacement threshold energy of titanium nitride (TiN). The optimum energy scope shows that the incident energy of Ar+ around 110eV for TiN (111) and 80eV for TiN (200) effectively enhances the mobility of adatom on surface but excludes the damage in underlying bulk. The theoretical prediction and the experimental result are in good agreement in low energy ion beam-assisted deposition.

  2. Texture development of CeO2 thin films deposited by ion beam assisted deposition

    International Nuclear Information System (INIS)

    CeO2 thin films were prepared on amorphous quartz glass substrates by the ion beam assisted deposition (IBAD) technique at room temperature. In order to control both the in-plane and out-of-plane texture of the films, a special geometrical arrangement of the ion sources, the target, and the substrate was used. A new concept, considering the role of reflected particles from the target, which we call self-IBAD, was introduced. The structural properties of the CeO2 films were investigated by x-ray diffraction. Good biaxially textured films were obtained with out-of-plane mosaic spreads of 3.0 deg. and in-plane alignment of 10.8 deg. C

  3. Ion beam assisted deposition of Ti–Si–C thin films

    Directory of Open Access Journals (Sweden)

    A. Twardowska

    2009-11-01

    Full Text Available Purpose: Deposition of hard thin multilayer coatings is a common practice in improving the performance of tools for many different applications. From this aspect Ti3SiC2, due to its lamellar structure and unique combination of properties is a potential interlayer material candidate for thermo-mechanical application.Design/methodology/approach: Multiphase Ti–Si–C thin films were deposited by the ion beam assisted deposition (IBAD technique from a single Ti3SiC2 compound target on an AISI 316L steel substrate. To optimize the deposition process, Monte Carlo simulations were performed; the range of the deposition parameters was determined and then experimentally verified. Scanning and transmission electron microscopies were used to examine the microstructure and quality of the deposited films. Mechanical properties were determined by nanoindentation tests.Findings: The deposited film was flat, smooth and dense with small crystalline particles. The hardness HIT of coated substrates was in the range 2.7 to 5.3 GPa. The average calculated value reduced elastic modulus EIT for coated substrates was 160 GPa. The hardness and reduced elastic modulus for uncoated substrates were HIT = 4.4 GPa and EIT = 250 GPa, respectively.Practical implications: PVD techniques enable low substrate temperature deposition, preferred due to the thermal limitations of the metallic substrates commonly used in industrial applications. The aim of this work is low temperature deposition of Ti-Si-C film, from a single Ti3SiC2 compound target, on 316L steel substrate, using the IBAD technique, known for excellent film connection to the substrate.Originality/value: Ion beam assisted deposition parameters were calculated and experimentally verified.

  4. Absolute density-profile tomography of molecular beams using multiphoton ionization

    International Nuclear Information System (INIS)

    We describe an approach for the absolute density measurement of rotationally symmetric molecular beams via multiphoton ionization. This simple single-projection tomographic technique requires only knowledge of the spatial intensity profile and ionization characteristics of the focused laser beam that probes the pulsed molecular jet. Multiphoton ionization (MPI) of a xenon beam allowed tomographic reconstruction of a two-dimensional density profile with a peak density of (4.2±0.4)x1018 m-3, which was compared with the theoretical predictions of the sudden freeze model. An analytic solution to the Abel transform is derived for Gaussian projected density profiles which greatly simplifies the reconstruction of the absolute radial density. MPI is sufficiently general that this technique can be readily applied to atomic beams with a broad range of chemistries.

  5. Biaxial Texture Evolution in MgO Films Fabricated Using Ion Beam-Assisted Deposition

    Science.gov (United States)

    Xue, Yan; Zhang, Ya-Hui; Zhao, Rui-Peng; Zhang, Fei; Lu, Yu-Ming; Cai, Chuan-Bing; Xiong, Jie; Tao, Bo-Wan

    2016-07-01

    The growth of multifunctional thin films on flexible substrates is important technologically, because flexible electronics require such a platform. In this study, we examined the evolution of biaxial texture in MgO films prepared using ion beam-assisted deposition (IBAD) on a Hastelloy substrate. Texture and microstructure developments were characterized through in situ reflection high-energy electron diffraction monitoring, x-ray diffraction, and atomic force microscopy, which demonstrated that biaxial texture was developed during the nucleation stage (~2.2 nm). The best biaxial texture was obtained with a thickness of approximately 12 nm. As MgO continued to grow, the influence of surface energy was reduced, and film growth was driven by the attempt to minimize volume free-energy density. Thus the MgO grains were subsequently rotated at the (002) direction toward the ion beam. In addition, an approach was developed for accelerating in-plane texture evolution by pre-depositing an amorphous MgO layer before IBAD.

  6. Tilting of carbon encapsulated metallic nanocolumns in carbon-nickel nanocomposite films by ion beam assisted deposition

    Energy Technology Data Exchange (ETDEWEB)

    Krause, Matthias [Helmholtz-Zentrum Dresden-Rossendorf, PF-510119, 01314 Dresden (Germany); Technische Universitaet Dresden, D-01062 Dresden (Germany); Muecklich, Arndt; Zschornak, Matthias; Wintz, Sebastian; Gemming, Sibylle; Abrasonis, Gintautas [Helmholtz-Zentrum Dresden-Rossendorf, PF-510119, 01314 Dresden (Germany); Oates, Thomas W. H. [Leibniz-Institut fuer Analytische Wissenschaft, ISAS e.V., Albert-Einstein-Str. 9, 12489 Berlin (Germany); Luis Endrino, Jose [Surfaces and Coatings Department, Instituto de Ciencia de Materiales de Madrid, c/Sor Juana Ines de la Cruz 3, Cantoblanco, 28049 Madrid (Spain); Baehtz, Carsten; Shalimov, Artem [Helmholtz-Zentrum Dresden-Rossendorf, PF-510119, 01314 Dresden (Germany); Rossendorf Beamline, European Synchrotron Radiation Facility, F-38043 Grenoble (France)

    2012-07-30

    The influence of assisting low-energy ({approx}50-100 eV) ion irradiation effects on the morphology of C:Ni ({approx}15 at. %) nanocomposite films during ion beam assisted deposition (IBAD) is investigated. It is shown that IBAD promotes the columnar growth of carbon encapsulated metallic nanoparticles. The momentum transfer from assisting ions results in tilting of the columns in relation to the growing film surface. Complex secondary structures are obtained, in which a significant part of the columns grows under local epitaxy via the junction of sequentially deposited thin film fractions. The influence of such anisotropic film morphology on the optical properties is highlighted.

  7. Quantum state specific reactant preparation in a molecular beam by rapid adiabatic passage

    Energy Technology Data Exchange (ETDEWEB)

    Chadwick, Helen, E-mail: helen.chadwick@epfl.ch; Hundt, P. Morten; Reijzen, Maarten E. van; Yoder, Bruce L.; Beck, Rainer D. [Laboratoire de Chimie Physique Moléculaire, Ecole Polytechnique Fédérale de Lausanne, Lausanne (Switzerland)

    2014-01-21

    Highly efficient preparation of molecules in a specific rovibrationally excited state for gas/surface reactivity measurements is achieved in a molecular beam using tunable infrared (IR) radiation from a single mode continuous wave optical parametric oscillator (cw-OPO). We demonstrate that with appropriate focusing of the IR radiation, molecules in the molecular beam crossing the fixed frequency IR field experience a Doppler tuning that can be adjusted to achieve complete population inversion of a two-level system by rapid adiabatic passage (RAP). A room temperature pyroelectric detector is used to monitor the excited fraction in the molecular beam and the population inversion is detected and quantified using IR bleaching by a second IR-OPO. The second OPO is also used for complete population transfer to an overtone or combination vibration via double resonance excitation using two spatially separated RAP processes.

  8. TEM investigations of Ni-Cu thin film coatings, obtained by multilayer technique, coevaporation, and ion beam assisted deposition

    International Nuclear Information System (INIS)

    The microstructural aspects of three different thin film coatings of NiCu at the equiatomic concentration are studied by TEM investigations. Those coatings are: multilayered samples, coevaporated samples, and ion beam assisted codeposited samples. In all cases, under certain experimental conditions of irradiation and annealing, an unexpected L10 ordered phase precipitates in the solid solution matrix of NiCu. (author)

  9. Peculiarities of fullerenes condensation from molecular beam in vacuum

    Directory of Open Access Journals (Sweden)

    Neluba P. L.

    2011-12-01

    Full Text Available There was investigated С60 fullerenes condensation in vacuum on unheated Si, GaAs, isinglass stone substrates. There were used atomic-force microscopy, Raman scattering and measurement of mechanical stresses in films. It is established that the С60 molecule can decay on the substrates with the formation of other carbon structures in the condensate without supplementary physical effects on the sublimated beam in «evaporator — substrate» space. The possibility was found to increase the grain size and reduce the mechanical stresses in the condensate.

  10. Molecular Beam Studies of Hot Atom Chemical Reactions: Reactive Scattering of Energetic Deuterium Atoms

    Science.gov (United States)

    Continetti, R. E.; Balko, B. A.; Lee, Y. T.

    1989-02-01

    A brief review of the application of the crossed molecular beams technique to the study of hot atom chemical reactions in the last twenty years is given. Specific emphasis is placed on recent advances in the use of photolytically produced energetic deuterium atoms in the study of the fundamental elementary reactions D + H{sub 2} -> DH + H and the substitution reaction D + C{sub 2}H{sub 2} -> C{sub 2}HD + H. Recent advances in uv laser and pulsed molecular beam techniques have made the detailed study of hydrogen atom reactions under single collision conditions possible.

  11. Photoluminescence Characterization of Boron-doped Si Layers Grown by Molecular Beam Epitaxy

    Institute of Scientific and Technical Information of China (English)

    LI Cheng; LAI Hong-kai; CHEN Song-yan

    2005-01-01

    Photoluminescence spectra were used to characterize the boron-doped Si layers grown by molecular beam epitaxy using HBO2 as the doping source. The influence of boron doping concentration on the dislocation-related photoluminescence spectra of molecular beam epitaxy Si layers annealed at 900 ℃ was studied with different doping concentrations and growth temperature. The broad photoluminescence band(from 0.75 eV to 0.90 eV) including D1 and D2 bands was associated with high boron doping concentration in the samples, while D3 and D4 bands might be related to oxygen precipitates.

  12. High temperature and high resolution uv photoelectron spectroscopy using supersonic molecular beams

    International Nuclear Information System (INIS)

    A high temperature molecular beam source with electron bombardment heating has been built for high resolution photoelectron spectroscopic studies of high temperature species and clusters. This source has the advantages of: producing an intense, continuous, seeded molecular beam, eliminating the interference of the heating mechanism from the photoelectron measurement. Coupling the source with our hemispherical electron energy analyzer, we can obtain very high resolution HeIα (584 angstrom) photoelectron spectra of high temperature species. Vibrationally-resolved photoelectron spectra of PbSe, As2, As4, and ZnCl2 are shown to demonstrate the performance of the new source. 25 refs., 8 figs., 1 tab

  13. Design of a molecular beam surface scattering apparatus for velocity and angular distribution measurements

    Energy Technology Data Exchange (ETDEWEB)

    Ceyer, S.T.; Siekhaus, W.J.; Somorjai, G.A.

    1981-09-01

    A molecular beam surface scattering apparatus designed for the study of corrosion and catalytic surface reactions is described. The apparatus incorporates two molecular or atomic beams aimed at a surface characterized by low energy electron diffraction (LEED) and Auger electron spectroscopy (AES), a rotatable, differentially pumped quadrupole mass spectrometer, and a versatile manipulator. Angular distributions and energy distributions as a function of angle and independent of the surface residence time can be measured. Typical data for the oxidation of deuterium to D/sub 2/O on a Pt(111) crystal surface are presented.

  14. DESIGN OF A MOLECULAR BEAM SURFACE SCATTERING APPARATUS FOR VELOCITY AND ANGULAR DISTRIBUTION MEASUREMENTS

    Energy Technology Data Exchange (ETDEWEB)

    Ceyer, S. T.; Siekhaus, W. J.; Somorjai, G. A.

    1980-11-01

    A molecular beam surface scattering apparatus designed for the study of corrosion and catalyticsurfacereactions is described. The apparatus incorporates two molecular or atomic beams aimed at a surface characterized by low energy electron diffraction (LEED) and Auger electron spectroscopy (AES), a rotatable, differentially pumped quadrupole mass spectrometer, and a versatile manipulator. Angular distributions and energy distributions as a funcion of angle and independent of the surface residence time can be measured. Typical data for the oxidation of deuterium to D{sub 2}O on a Pt(lll) crystal surface are presented.

  15. Using Molecular-Assisted Alpha Taxonomy to Better Understand Red Algal Biodiversity in Bermuda

    OpenAIRE

    Elisabeth N. Cianciola; Thea R. Popolizio; Craig W. Schneider; Lane, Christopher E.

    2010-01-01

    Molecular-assisted alpha taxonomy has recently become an effective practice in reassessing biodiversity and floristics for a variety of different organisms. This paper presents a series of examples that have been drawn from biodiversity work being carried out on the marine red algae of Bermuda. Molecular sequencing of DNA from Bermuda samples has already begun to greatly alter the makeup of the flora as it was known just decades ago, and will help set a new database for future comparison as c...

  16. The influence of Laval nozzle throat size on supersonic molecular beam injection

    Institute of Scientific and Technical Information of China (English)

    Xinkui He; Xianfu Feng; Mingmin Zhong; Fujun Gou; Shuiquan Deng; Yong Zhao

    2014-01-01

    In this study, finite element analysis (FEA) has been used to investigate the effects of different Laval nozzle throat sizes on supersonic molecular beam. The simulations indicate the Mach numbers of the molecular stream peak at different positions along the center axis of the beam, which correspond to local minimums of the molecular densities. With the increase of the throat diam-eter, the first peak of the Mach number increases first and then decreases, while that of the molecular number density increases gradually. Moreover, both first peaks shift pro-gressively away from the throat. At the last part, we discuss the possible applications of our FEA approach to solve some crucial problems met in modern transportations.

  17. Molecular beam epitaxy of thick InGaN(0001) films: Effects of substrate temperature on structural and electronic properties

    Science.gov (United States)

    Papadomanolaki, E.; Bazioti, C.; Kazazis, S. A.; Androulidaki, M.; Dimitrakopulos, G. P.; Iliopoulos, E.

    2016-03-01

    Indium gallium nitride films with compositions close to the middle of the miscibility gap and thickness approximately up to 0.5 μm were epitaxially grown on GaN(0001) by plasma-assisted molecular beam epitaxy at growth temperatures spanning a range of 400-590 °C. Epilayers were characterized by X-ray diffraction, transmission electron microscopy and Hall effect measurements. The effect of substrate temperature during growth, on the structural and electronic properties of the films, was studied. Single phase films, with record high electron mobilities were obtained at lower temperatures. Increased growth temperatures led to epilayers with higher defect densities and phase separation. Strain relaxation through sequestration layering and introduction of multiple basal stacking faults was observed at such temperatures.

  18. High quality InAlN single layers lattice-matched to GaN grown by molecular beam epitaxy

    International Nuclear Information System (INIS)

    We report on properties of high quality ∼60 nm thick InAlN layers nearly in-plane lattice-matched to GaN, grown on c-plane GaN-on-sapphire templates by plasma-assisted molecular beam epitaxy. Excellent crystalline quality and low surface roughness are confirmed by X-ray diffraction, transmission electron microscopy, and atomic force microscopy. High annular dark field observations reveal a periodic in-plane indium content variation (8 nm period), whereas optical measurements evidence certain residual absorption below the band-gap. The indium fluctuation is estimated to be ± 1.2% around the nominal 17% indium content via plasmon energy oscillations assessed by electron energy loss spectroscopy with sub-nanometric spatial resolution.

  19. Contactless electroreflectance studies of surface potential barrier for N- and Ga-face epilayers grown by molecular beam epitaxy

    Energy Technology Data Exchange (ETDEWEB)

    Kudrawiec, R.; Janicki, L.; Gladysiewicz, M.; Misiewicz, J. [Institute of Physics, Wroclaw University of Technology, Wybrzeże Wyspiańskiego 27, 50-370 Wrocław (Poland); Cywinski, G.; Boćkowski, M.; Muzioł, G. [Institute of High Pressure Physics, Polish Academy of Sciences, Sokołowska 29/37, 01-142 Warsaw (Poland); Chèze, C. [TopGaN Sp. z o.o., Sokołowska 29/37, 01-142 Warsaw (Poland); Sawicka, M.; Skierbiszewski, C. [Institute of High Pressure Physics, Polish Academy of Sciences, Sokołowska 29/37, 01-142 Warsaw (Poland); TopGaN Sp. z o.o., Sokołowska 29/37, 01-142 Warsaw (Poland)

    2013-07-29

    Two series of N- and Ga-face GaN Van Hoof structures were grown by plasma-assisted molecular beam epitaxy to study the surface potential barrier by contactless electroreflectance (CER). A clear CER resonance followed by strong Franz-Keldysh oscillation of period varying with the thickness of undoped GaN layer was observed for these structures. This period was much shorter for N-polar structures that means smaller surface potential barrier in these structures than in Ga-polar structures. From the analysis of built-in electric field it was determined that the Fermi-level is located 0.27 ± 0.05 and 0.60 ± 0.05 eV below the conduction band for N- and Ga-face GaN surface, respectively.

  20. Electron molecular beam epitaxy: Layer-by-layer growth of complex oxides via pulsed electron-beam deposition

    Energy Technology Data Exchange (ETDEWEB)

    Comes, Ryan; Liu Hongxue; Lu Jiwei [Department of Materials Science and Engineering, University of Virginia, Charlottesville, Virginia 22904 (United States); Gu, Man [Department of Physics, University of Virginia, Charlottesville, Virginia 22904 (United States); Khokhlov, Mikhail; Wolf, Stuart A. [Department of Materials Science and Engineering, University of Virginia, Charlottesville, Virginia 22904 (United States); Guilford College, Greensboro, North Carolina 27410 (United States)

    2013-01-14

    Complex oxide epitaxial film growth is a rich and exciting field, owing to the wide variety of physical properties present in oxides. These properties include ferroelectricity, ferromagnetism, spin-polarization, and a variety of other correlated phenomena. Traditionally, high quality epitaxial oxide films have been grown via oxide molecular beam epitaxy or pulsed laser deposition. Here, we present the growth of high quality epitaxial films using an alternative approach, the pulsed electron-beam deposition technique. We demonstrate all three epitaxial growth modes in different oxide systems: Frank-van der Merwe (layer-by-layer); Stranski-Krastanov (layer-then-island); and Volmer-Weber (island). Analysis of film quality and morphology is presented and techniques to optimize the morphology of films are discussed.

  1. Electron molecular beam epitaxy: Layer-by-layer growth of complex oxides via pulsed electron-beam deposition

    Science.gov (United States)

    Comes, Ryan; Gu, Man; Khokhlov, Mikhail; Liu, Hongxue; Lu, Jiwei; Wolf, Stuart A.

    2013-01-01

    Complex oxide epitaxial film growth is a rich and exciting field, owing to the wide variety of physical properties present in oxides. These properties include ferroelectricity, ferromagnetism, spin-polarization, and a variety of other correlated phenomena. Traditionally, high quality epitaxial oxide films have been grown via oxide molecular beam epitaxy or pulsed laser deposition. Here, we present the growth of high quality epitaxial films using an alternative approach, the pulsed electron-beam deposition technique. We demonstrate all three epitaxial growth modes in different oxide systems: Frank-van der Merwe (layer-by-layer); Stranski-Krastanov (layer-then-island); and Volmer-Weber (island). Analysis of film quality and morphology is presented and techniques to optimize the morphology of films are discussed.

  2. Low-temperature grown graphene films by using molecular beam epitaxy

    Energy Technology Data Exchange (ETDEWEB)

    Lin, Meng-Yu [Institute of Electronics, National Taiwan University, Taipei, Taiwan (China); Research Center for Applied Sciences, Academia Sinica, Nankang, Taipei, Taiwan (China); Guo, Wei-Ching; Wang, Pro-Yao [Institute of Optoelectronic Sciences, National Taiwan Ocean University, Keelung, Taiwan (China); Wu, Meng-Hsun [College of Photonics, National Chiao-Tung University, Tainan, Taiwan (China); Liu, Te-Huan; Chang, Chien-Cheng [Institute of Applied Mechanics, National Taiwan University, Taipei, Taiwan (China); Pao, Chun-Wei; Lin, Shih-Yen [Research Center for Applied Sciences, Academia Sinica, Nankang, Taipei, Taiwan (China); Lee, Si-Chen [Institute of Electronics, National Taiwan University, Taipei, Taiwan (China)

    2012-11-26

    Complete graphene film is prepared by depositing carbon atoms directly on Cu foils in a molecular beam epitaxy chamber at 300 Degree-Sign C. The Raman spectrum of the film has indicated that high-quality few-layer graphene is obtained. With back-gated transistor architecture, the characteristic current modulation of graphene transistors is observed. Following the similar growth procedure, graphitization is observed at room temperature, which is consistent with the molecular dynamics simulations of graphene growth.

  3. Phonon-assisted and magnetic field induced Kondo tunneling in single molecular devices

    Energy Technology Data Exchange (ETDEWEB)

    Kikoin, K [School of Physics and Astronomy, Tel Aviv University, Tel Aviv 69978 (Israel); Kiselev, M N [The Abdus Salam International Centre for Theoretical Physics, Trieste (Italy)

    2007-12-15

    We consider the Kondo tunneling induced by multiphonon emission/absorption processes in magnetic molecular complexes with low-energy singlet-triplet spin gap and show that the number of assisting phonons may be changed by varying the Zeeman splitting of excited triplet state. As a result, the structure of multiphonon Kondo resonances may be scanned by means of magnetic field tuning.

  4. Collision dynamics of methyl radicals and highly vibrationally excited molecules using crossed molecular beams

    Energy Technology Data Exchange (ETDEWEB)

    Chu, P.M.Y.

    1991-10-01

    The vibrational to translational (V{yields}T) energy transfer in collisions between large highly vibrationally excited polyatomics and rare gases was investigated by time-of-flight techniques. Two different methods, UV excitation followed by intemal conversion and infrared multiphoton excitation (IRMPE), were used to form vibrationally excited molecular beams of hexafluorobenzene and sulfur hexafluoride, respectively. The product translational energy was found to be independent of the vibrational excitation. These results indicate that the probability distribution function for V{yields}T energy transfer is peaked at zero. The collisional relaxation of large polyatomic molecules with rare gases most likely occurs through a rotationally mediated process. Photodissociation of nitrobenzene in a molecular beam was studied at 266 nm. Two primary dissociation channels were identified including simple bond rupture to produce nitrogen dioxide and phenyl radical and isomerization to form nitric oxide and phenoxy radical. The time-of-flight spectra indicate that simple bond rupture and isomerization occurs via two different mechanisms. Secondary dissociation of the phenoxy radicals to carbon monoxide and cyclopentadienyl radicals was observed as well as secondary photodissociation of phenyl radical to give H atom and benzyne. A supersonic methyl radical beam source is developed. The beam source configuration and conditions were optimized for CH{sub 3} production from the thermal decomposition of azomethane. Elastic scattering of methyl radical and neon was used to differentiate between the methyl radicals and the residual azomethane in the molecular beam.

  5. Developer molecular size dependence of pattern formation of polymer type electron beam resists with various molecular weights

    Science.gov (United States)

    Takayama, Tomohiro; Asada, Hironori; Kishimura, Yukiko; Ochiai, Shunsuke; Hoshino, Ryoichi; Kawata, Atsushi

    2016-05-01

    The sensitivity and the resolution are affected by not only the nature of the resist such as a chemical structure and a molecular weight but also the developing process such as a developer molecular size. Exposure characteristics of positive-tone polymer resists having various molecular weights (Mw's) ranging from 60 k to 500 k are investigated using different ester solvents as a developer. The line-and-space (L/S) patterns are exposed by the electron beam writing system with an acceleration voltage of 50 kV and the samples are developed by amyl acetate, hexyl acetate and heptyl acetate. The pattern shape becomes better and the surface of the resist also becomes smoother with increasing developer molecular size, though the exposure dose required for the formation of the L/S pattern increases. The dose margin of pattern formation is also wider in all the resists having the different molecular weights. The dissolution in the unexposed portions of the 60k-Mw resist for heptyl acetate is reduced significantly compared with those for amyl acetate and hexyl acetate. The improvement of the pattern shape and the increasing of dose margin are remarkable in the low molecular weight resist. The 3σ of line width roughness tends to be smaller in the higher molecular weight resist and with the larger molecular size developer. Exposure experiment of the 35 nm pitch pattern using the 500k-Mw resist developed at the room temperature is presented.

  6. Ion Flux Measurements in Electron Beam Produced Plasmas in Atomic and Molecular Gases

    Science.gov (United States)

    Walton, S. G.; Leonhardt, D.; Blackwell, D. D.; Murphy, D. P.; Fernsler, R. F.; Meger, R. A.

    2001-10-01

    In this presentation, mass- and time-resolved measurements of ion fluxes sampled from pulsed, electron beam-generated plasmas will be discussed. Previous works have shown that energetic electron beams are efficient at producing high-density plasmas (10^10-10^12 cm-3) with low electron temperatures (Te < 1.0 eV) over the volume of the beam. Outside the beam, the plasma density and electron temperature vary due, in part, to ion-neutral and electron-ion interactions. In molecular gases, electron-ion recombination plays a significant role while in atomic gases, ion-neutral interactions are important. These interactions also determine the temporal variations in the electron temperature and plasma density when the electron beam is pulsed. Temporally resolved ion flux and energy distributions at a grounded electrode surface located adjacent to pulsed plasmas in pure Ar, N_2, O_2, and their mixtures are discussed. Measurements are presented as a function of operating pressure, mixture ratio, and electron beam-electrode separation. The differences in the results for atomic and molecular gases will also be discussed and related to their respective gas-phase kinetics.

  7. Relationship Between Differential Interference Angle and Parameter of Experiment in Molecular Beam

    Institute of Scientific and Technical Information of China (English)

    LI Yong-Qing; LI Jian; MA Feng-Cai

    2006-01-01

    Collisional quantum interference (CQI) was observed in the intramolecular rotational energy transfer in the experiment of the static cell, and the integral interference angles were measured. To observe more precise information, the experiment in the molecular beam should be taken, from which the relationship between the differential interference angle and the scattering angle can be obtained. In this paper, the theoretical model of CQI is described in an atom-diatom system in the condition of the molecular beam, based on the first-Born approximation of time-dependent perturbation theory, taking into accounts the long-range interaction potential. The method of observing and measuring correctly the differential interference angle is presented. The changing tendency of the differential interference angle with the impact parameter and relative velocity is discussed. The changing tendencies of the differential interference angle with the parameter of experiment in the molecular beam, including the impact parameter and the velocity are discussed. This theoretical model is important to understand or perform the experiment in the molecular beam.

  8. Using Pyrolysis Molecular Beam Mass Spectrometry to Characterize Soil Organic Carbon in Native Prairie Soils

    Science.gov (United States)

    The objective of this study was to characterize soil organic carbon (SOC) with pyrolysis molecular beam mass spectrometry (py-MBMS) and then to determine correlations between the mass spectra and associated soil characterization data. Both soil carbon chemistry and the organic forms in which SOC is...

  9. Molecular beam epitaxy growth of InSb1−xBix thin films

    DEFF Research Database (Denmark)

    Song, Yuxin; Wang, Shumin; Saha Roy, Ivy;

    2013-01-01

    Molecular beam epitaxy growth for InSb1−xBix thin films on (100) GaAs substrates is reported. Successful Bi incorporation for 2% is achieved, and up to 70% of the incorporated Bi atoms are at substitutional sites. The effects of growth parameters on Bi incorporation and surface morphology are stu...

  10. Construction and calibration of a fast superconducting bolometer for molecular beams detection

    International Nuclear Information System (INIS)

    A tin bolometer evaporated on an anodized aluminum block is described. The noise equivalent power of the bolometer is of 10-13 watt Hzsup(-1/2) and the time constant is 3μ sec. The bolometer is a suitable fast molecular beam detector

  11. Scanning Tunneling Microscopy Studies of Topological Insulators Grown by Molecular Beam Epitaxy

    Directory of Open Access Journals (Sweden)

    Xue Qikun

    2012-03-01

    Full Text Available We summarize our recent scanning tunneling microscopy (STM study of topological insulator thin films grown by molecular beam epitaxy (MBE, which includes the observation of electron standing waves on topological insulator surface and the Landau quantization of topological surface states. The work has provided valuable information to the understanding of intriguing properties of topological insulators, as predicted by theory.

  12. Electron collisions and internal excitation in stored molecular ion beams

    Energy Technology Data Exchange (ETDEWEB)

    Buhr, H.

    2006-07-26

    In storage ring experiments the role, which the initial internal excitation of a molecular ion can play in electron collisions, and the effect of these collisions on the internal excitation are investigated. Dissociative recombination (DR) and inelastic and super-elastic collisions are studied in the system of He{sup +}{sub 2}. The DR rate coefficient at low energies depends strongly on the initial vibrational excitation in this system. Therefore changes in the DR rate coefficient are a very sensitive probe for changes in the vibrational excitation in He{sup +}{sub 2}, which is used to investigate the effects of collisions with electrons and residual gas species. The low-energy DR of HD{sup +} is rich with resonances from the indirect DR process, when certain initial rotational levels in the molecular ion are coupled to levels in neutral Rydberg states lying below the ion state. Using new procedures for high-resolution electron-ion collision spectroscopy developed here, these resonances in the DR cross section can be measured with high energy sensitivity. This allows a detailed comparison with results of a MQDT calculation in an effort to assign some or all of the resonances to certain intermediate Rydberg levels. (orig.)

  13. Electron collisions and internal excitation in stored molecular ion beams

    International Nuclear Information System (INIS)

    In storage ring experiments the role, which the initial internal excitation of a molecular ion can play in electron collisions, and the effect of these collisions on the internal excitation are investigated. Dissociative recombination (DR) and inelastic and super-elastic collisions are studied in the system of He+2. The DR rate coefficient at low energies depends strongly on the initial vibrational excitation in this system. Therefore changes in the DR rate coefficient are a very sensitive probe for changes in the vibrational excitation in He+2, which is used to investigate the effects of collisions with electrons and residual gas species. The low-energy DR of HD+ is rich with resonances from the indirect DR process, when certain initial rotational levels in the molecular ion are coupled to levels in neutral Rydberg states lying below the ion state. Using new procedures for high-resolution electron-ion collision spectroscopy developed here, these resonances in the DR cross section can be measured with high energy sensitivity. This allows a detailed comparison with results of a MQDT calculation in an effort to assign some or all of the resonances to certain intermediate Rydberg levels. (orig.)

  14. Molecular beam studies of oxide reduction by atomic hydrogen

    International Nuclear Information System (INIS)

    The graphite and oxide internals of a CTR are susceptible to chemical corrosion as well as to physical degradation by high-energy particles. Reactions of thermal atomic hydrogen with oxides are being studied. The hydrogen used is at thermal energy (0.22 eV). Typical data are reported for the H/UO2 system. The reaction probability is plotted as a function of solid temperature at fixed beam intensity and moculation frequency. The reaction probability increases from low temperature to a high-temperature plateau at about 13000C. Here the reaction rate is limited solely by the sticking probability of H on the surface; about one in seven of the incident atoms is chemisorbed by the surface and ultimately returns to the gas phase as water vapor. A reaction model comprising sticking, recombination to H2, solution and diffusion of H in the bulk of the UO2, surface reaction of adsorbed H with lattice oxygen atoms to produce the hydroxyl radical, and production of water is constructed. The rate constants for the elementary steps in the mechanism are tabulated. 2 figures, 2 tables

  15. Molecular Beam Optical Zeeman Spectroscopy of Vanadium Monoxide, VO

    Science.gov (United States)

    Nguyen, Trung; Zhang, Ruohan; Steimle, Timothy

    2016-06-01

    Like almost all astronomical studies, exoplanet investigations are observational endeavors that rely primarily on remote spectroscopic sensing to infer the physical properties of planets. Most exoplanet related information is inferred from to temporal variation of luminosity of the parent star. An effective method of monitoring this variation is via Magnetic Doppler Imaging (MDI), which uses optical polarimetry of paramagnetic molecules or atoms. One promising paramagnetic stellar absorption is the near infrared spectrum of VO. With this in mind, we have begun a project to record and analyze the field-free and Zeeman spectrum of the band. A cold (approx. 20 K) beam of VO was probed with a single frequency laser and detected using laser induced fluorescence. The determined spectral parameters will be discussed and compared to those extracted from the analysis of a hot spectrum. Supported by the National Science Foundation under the Grant No. CHE-1265885. O. Kochukhov, N. Rusomarov, J. A. Valenti, H. C. Stempels, F. Snik, M. Rodenhuis, N. Piskunov, V. Makaganiuk, C. U. Keller and C. M. Johns-Krull, Astron. Astrophys. 574 (Pt. 2), A79/71-A79/12 (2015). S. V. Berdyugina, Astron. Soc. Pac. Conf. Ser. 437 (Solar Polarization 6), 219-235 (2011). S. V. Berdyugina, P. A. Braun, D. M. Fluri and S. K. Solanki, Astron. Astrophys. 444 (3), 947-960 (2005). A. S. C. Cheung, P. G. Hajigeorgiou, G. Huang, S. Z. Huang and A. J. Merer, J. Mol. Spectrosc. 163 (2), 443-458 (1994)

  16. The role of molecular markers and marker assisted selection in breeding for organic agriculture

    DEFF Research Database (Denmark)

    Lammerts van Bueren, E.T.; Backes, G.; de Vriend, H.;

    2010-01-01

    Plant geneticists consider molecular marker assisted selection a useful additional tool in plant breeding programs to make selection more efficient. Standards for organic agriculture do not exclude the use of molecular markers as such, however for the organic sector the appropriateness of molecular...... markers is not self-evident and is often debated. Organic and low-input farming conditions require breeding for robust and flexible varieties, which may be hampered by too much focus on the molecular level. Pros and contras for application of molecular markers in breeding for organic agriculture...... identified, e.g. better knowledge about gene pool of breeding material, more efficient introgression of new resistance genes from wild relatives and testing pyramided genes. There were also common concerns among breeders aiming at breeding for organic and/or conventional agriculture, such as the increasing...

  17. Reflection mass spectrometry technique for monitoring and controlling composition during molecular beam epitaxy

    Science.gov (United States)

    Brennan, Thomas M.; Hammons, B. Eugene; Tsao, Jeffrey Y.

    1992-01-01

    A method for on-line accurate monitoring and precise control of molecular beam epitaxial growth of Groups III-III-V or Groups III-V-V layers in an advanced semiconductor device incorporates reflection mass spectrometry. The reflection mass spectrometry is responsive to intentional perturbations in molecular fluxes incident on a substrate by accurately measuring the molecular fluxes reflected from the substrate. The reflected flux is extremely sensitive to the state of the growing surface and the measurements obtained enable control of newly forming surfaces that are dynamically changing as a result of growth.

  18. A new approach for 3D reconstruction from bright field TEM imaging: Beam precession assisted electron tomography

    International Nuclear Information System (INIS)

    The successful combination of electron beam precession and bright field electron tomography for 3D reconstruction is reported. Beam precession is demonstrated to be a powerful technique to reduce the contrast artifacts due to diffraction and curvature in thin foils. Taking advantage of these benefits, Precession assisted electron tomography has been applied to reconstruct the morphology of Sn precipitates embedded in an Al matrix, from a tilt series acquired in a range from +49o to -61o at intervals of 2o and with a precession angle of 0.6o in bright field mode. The combination of electron tomography and beam precession in conventional TEM mode is proposed as an alternative procedure to obtain 3D reconstructions of nano-objects without a scanning system or a high angle annular dark field detector. -- Highlights: → Electron beam precession reduces spurious diffraction contrast in bright field mode. → Bend contour related contrast depends on precession angle. → Electron beam precession is combined with bright field electron tomography. → Precession assisted BF tomography allowed 3D reconstruction of a Sn precipitate.

  19. Molecular and morphological characterization of hydrochar produced by microwave-assisted hydrothermal carbonization of cellulose

    Directory of Open Access Journals (Sweden)

    Marcela Guiotoku

    2012-05-01

    Full Text Available The objective of this work was to characterize the morphology and molecular composition of the hydrochar produced by microwave-assisted hydrothermal carbonization of cellulose. The produced hydrochar consists mainly of aggregate microspheres with about 2.0 µm in diameter, with aliphatic and aromatic structures and the presence of carbonyl functional groups. The aromatic groups are formed mainly by benzofuran-like structures, being chemically different from common cellulose char. Microwave-assisted hydrothermal carbonization yields a functionalized carbon-rich material similar to that produced by the conventional hydrothermal process.

  20. Molecular Beam Optical Study of Gold Sulfide and Gold Oxide

    Science.gov (United States)

    Zhang, Ruohan; Yu, Yuanqin; Steimle, Timothy

    2016-06-01

    Gold-sulfur and gold-oxygen bonds are key components to numerous established and emerging technologies that have applications as far ranging as medical imaging, catalysis, electronics, and material science. A major theoretical challenge for describing this bonding is correctly accounting for the large relativistic and electron correlation effects. Such effects are best studied in diatomic, AuX, molecules. Recently, the observed AuS electronic state energy ordering was measured and compared to a simple molecular orbital diagram prediction. Here we more thoroughly investigate the nature of the electronic states of both AuS and AuO from the analysis of high-resolution (FWHM\\cong35MHz) optical Zeeman spectroscopy of the (0,0){B}2Σ--{X}2Π3/2 bands. The determined fine and hyperfine parameters for the {B}2Σ- state of AuO differ from those extracted from the analysis of a hot, Doppler-limited, spectrum. It is demonstrated that the nature of the {B}2Σ- states of AuO and AuS are radically different. The magnetic tuning of AuO and AuS indicates that the {B}2Σ- states are heavily contaminated. Supported by the National Science Foundation under Grant No.1265885. D. L. Kokkin, R. Zhang, T. C. Steimle, I. A. Wyse, B. W. Pearlman and T. D. Varberg, J. Phys. Chem. A., 119(48), 4412, 2015. L. C. O'Brien, B. A. Borchert, A. Farquhar, S. Shaji, J. J. O'Brien and R. W. Field, J. Mol. Spectrosc., 252(2), 136, 2008

  1. Optical Properties and Microstructure of Ta2O5 Thin Films Prepared by Ion Assisted Electron Beam Evaporation

    Institute of Scientific and Technical Information of China (English)

    ZHANG Guangyong; XUE Yiyu; GUO Peitao; WANG Hanhua; MA Zhongjie

    2008-01-01

    An effective method for determining the refractive index of weak absorption transparent thin films was presented, which is also applicable to other weak absorption dielectric thin films.The as-deposited Ta2O5 thin films prepared by ion assisted electron beam evaporation showed a maxima transmittance as high as 93% which was close to that of the bare substrate, and exhibited a blue shift when the substrate temperature increased from room temperature to 250 ℃. The refractive index seemed to be immune to the substrate temperature and film thickness with its value about 2.14 at incidence wavelength of 550 nm. The surface morphology measured by atomic force microscopy (AFM) revealed that the microstructures lead to the slim optical difference, which was the interplay of substrate temperature and assisted ion beam.

  2. Laser molecular beam epitaxy of ZnO thin films and heterostructures

    OpenAIRE

    Opel, Matthias; Geprägs, Stephan; Althammer, Matthias; Brenninger, Thomas; Gross, Rudolf

    2013-01-01

    We report on the growth of epitaxial ZnO thin films and ZnO based heterostructures on sapphire substrates by laser molecular beam epitaxy (MBE). We first discuss some recent developments in laser-MBE such as flexible ultra-violet laser beam optics, infrared laser heating systems or the use of atomic oxygen and nitrogen sources, and describe the technical realization of our advanced laser-MBE system. Then we describe the optimization of the deposition parameters for ZnO films such as laser flu...

  3. Amplified spontaneous emission of a molecular nitrogen laser excited by an intense relativistic electron beam

    International Nuclear Information System (INIS)

    Report of a study of the shape and length of the output pulse of a molecular nitrogen laser, excited by an intense relativistic electron beam, is described. The rate equations are computer solved, at first ignoring the spontaneous emission during the excitation process. Afterwards the rate equations are solved taking into account excitation functions of various shapes and lengths, related to electron-beam pulses of a few kA and a few nsec. Laser power output, energy, and peak-time, i.e., the time at which the gain reaches its saturated value, are given and discussed as functions of the intensity and rise time of the excitation functions

  4. The role of molecular markers and marker assisted selection in breeding for organic and low-input agriculture

    NARCIS (Netherlands)

    Lammerts Van Bueren, E.; Ostergard, H.; Vriend, H.; Backes, G.

    2010-01-01

    Plant geneticists consider molecular marker assisted selection a useful additional tool in plant breeding programs to make selection more efficient. Standards for organic agriculture do not exclude the use of molecular markers as such, however for the organic sector the appropriateness of molecular

  5. Principles and design of a Zeeman-Sisyphus decelerator for molecular beams

    CERN Document Server

    Fitch, N J

    2016-01-01

    We explore a technique for decelerating molecules using a static magnetic field and optical pumping. Molecules travel through a spatially varying magnetic field and are repeatedly pumped into a weak-field seeking state as they move towards each strong field region, and into a strong-field seeking state as they move towards weak field. The method is time-independent and so is suitable for decelerating both pulsed and continuous molecular beams. By using guiding magnets at each weak field region, the beam can be simultaneously guided and decelerated. By tapering the magnetic field strength in the strong field regions, and exploiting the Doppler shift, the velocity distribution can be compressed during deceleration. We develop the principles of this deceleration technique, provide a realistic design, use numerical simulations to evaluate its performance for a beam of CaF, and compare this performance to other deceleration methods.

  6. Super-distant molecular hybridization of plant seeds by ion beam-mediated gene cluster

    Institute of Scientific and Technical Information of China (English)

    2001-01-01

    The N beam-mediated distant molecular hybridization between Ginkgo biloba I and watermelon was studied. The results showed that the ester gene of Ginkgo biloba L was successfully expressed in two varieties of watermelon. 3-16 and SR2-14-2, in both of which the ester quantities were measured as 17.0756 μg/g and 45.9998 μg/g respectively. Meanwhile, superoxide dismutase (SOD) activity in leaves of the watennelon expressing ester gene was increased twofold as compared to that of the control, showing that ion beam could mediate distant and/or super-distant donor gene expression in the cells of a receptor. Furthermore, the molecular nechanism of distant hybridization was analyzed.

  7. History of molecular beam research: personal reminiscences of the important evolutionary period 1919--1933

    International Nuclear Information System (INIS)

    Dr. Immanuel Estermann was engaged in writing a book on the History of the Molecular Beam Method when he died in Haifa, Israel on 31 March 1973. The original plan of the manuscript was to cover three distinct historical periods: the first, the years 1911--1933, when the center of research in molecular beams was at the University of Hamburg; the second, from 1933 to the outbreak of World War II, when the most active laboratory working in the field was at Columbia University; and the postwar period, when many laboratories on both sides of the Atlantic became actively engaged in this field. The material in this paper deals primarily with the early historical period and would have formed the essence of the first two chapters of the book. In addition to presenting interesting historical facts on a crucial period in the development of quantum physics, it contains some amusing historical sidelights on the research personalities that dominated that period

  8. Organic molecular beam deposition system and initial studies of organic layer growth

    Energy Technology Data Exchange (ETDEWEB)

    Andreasson, M [Applied Semiconductor Physics, Microtechnology and Nanoscience, Chalmers University of Technology, S-41296 Goeteborg (Sweden); Ilver, L [Department of Experimental Physics, Chalmers University of Technology, S-41296 Goeteborg (Sweden); Kanski, J [Department of Experimental Physics, Chalmers University of Technology, S-41296 Goeteborg (Sweden); Andersson, T G [Applied Semiconductor Physics, Microtechnology and Nanoscience, Chalmers University of Technology, S-41296 Goeteborg (Sweden)

    2006-09-01

    This work describes an organic molecular beam deposition system with substrate entry/exit chamber, buffer chamber and with the possibility to transfer substrate from a III-V molecular beam deposition system. Flux calibrations of organic molecules and the initial growth of organic layers are described. For this purpose, the molecules 3,4,9,10 perylene tetra carboxylic dianhydride and copper phtalocyanine were used. Layers were grown on oxidized and hydrogen passivated Si(100), Indium tin oxide and glass respectively. The growth was investigated with atomic force microscopy, reflection high energy electron diffraction and ultraviolet photoemission spectroscopy. An investigation with x-ray photoelectron and Raman spectroscopy on the effect of atmospheric exposure is also included, showing little effect of surface pollution when the samples were handled carefully. The initial formation (monolayers) of copper phtalocyanine thin films was studied by ultraviolet photoemission spectroscopy.

  9. Measuring the density of a molecular cluster injector via visible emission from an electron beam

    International Nuclear Information System (INIS)

    A method to measure the density distribution of a dense hydrogen gas jet is presented. A Mach 5.5 nozzle is cooled to 80 K to form a flow capable of molecular cluster formation. A 250 V, 10 mA electron beam collides with the jet and produces Hα emission that is viewed by a fast camera. The high density of the jet, several 1016 cm-3, results in substantial electron depletion, which attenuates the Hα emission. The attenuated emission measurement, combined with a simplified electron-molecule collision model, allows us to determine the molecular density profile via a simple iterative calculation.

  10. Gas source molecular beam epitaxy of GaN with hydrazine on spinel substrates

    Science.gov (United States)

    Nikishin, S. A.; Temkin, H.; Antipov, V. G.; Guriev, A. I.; Zubrilov, A. S.; Elyukhin, V. A.; Faleev, N. N.; Kyutt, R. N.; Chin, A. K.

    1998-05-01

    Growth of high quality wurtzite-structure GaN layers on (111) MgAl2O4 by gas source molecular beam epitaxy is described. Hydrazine was used as a source of active nitrogen. In situ reflection high energy electron diffraction was used to monitor the growth mode. Two-dimensional growth was obtained at temperatures above 750 °C on multi-step GaN buffer layers. The resulting GaN films show excellent luminescence properties.

  11. Low phonon energy Nd:LaF3 channel waveguide lasers fabricated by molecular beam epitaxy

    OpenAIRE

    Bhutta, T.; Chardon, A.M.; Shepherd, D. P.; Daran, E.; Serrano, C.; Munoz-Yague, A.

    2001-01-01

    We report the first fabrication and laser operation of channel waveguides based on LaF3 planar thin films grown by molecular beam epitaxy. To our knowledge, this is the lowest phonon energy dielectric material to have shown guided-wave laser operation to date. A full characterization, in terms of spectroscopy, laser results, and propagation losses, is given for the planar thin films upon which the channel waveguides are based. Two channel-fabrication methods are then described, the first invo...

  12. Carrier dynamics in ZnxCd1-xO films grown by molecular beam epitaxy

    Science.gov (United States)

    Cheng, F. J.; Lee, Y. C.; Hu, S. Y.; Lin, Y. C.; Tiong, K. K.; Chou, W. C.

    2016-05-01

    In this work, the carrier dynamics in Zn1-xCdxO thin films with different Cd contents grown by molecular beam epitaxy system have been investigated using photoluminescence and time-resolved photoluminescence measurements. The carrier lifetime can be estimated from the PL decay curve fitted by triple exponential function. The emission energy dependence and temperature dependence of the PL decay time indicate that carrier localization dominate the luminescence mechanism of the ZnCdO alloy semiconductor.

  13. Molecular Beam Epitaxial Growth of GaAs on (631) Oriented Substrates

    International Nuclear Information System (INIS)

    In this work, we report the study of the homoepitaxial growth of GaAs on (631) oriented substrates by molecular beam epitaxy (MBE). We observed the spontaneous formation of a high density of large scale features on the surface. The hilly like features are elongated towards the [-5, 9, 3] direction. We show the dependence of these structures with the growth conditions and we present the possibility of to create quantum wires structures on this surface

  14. Thermometry of Guided Molecular Beams from a Cryogenic Buffer-Gas Cell

    CERN Document Server

    Wu, X; Zeppenfeld, M; Chervenkov, S; Rempe, G

    2016-01-01

    We present a comprehensive characterization of cold molecular beams from a cryogenic buffer-gas cell, providing an insight into the physics of buffer-gas cooling. Cold molecular beams are extracted from a cryogenic cell by electrostatic guiding, which is also used to measure their velocity distribution. Molecules' rotational-state distribution is probed via radio-frequency resonant depletion spectroscopy. With the help of complete trajectory simulations, yielding the guiding efficiency for all of the thermally populated states, we are able to determine both the rotational and the translational temperature of the molecules at the output of the buffer-gas cell. This thermometry method is demonstrated for various regimes of buffer-gas cooling and beam formation as well as for molecular species of different sizes, $\\rm{CH_3F}$ and $\\rm{CF_3CCH}$. Comparison between the rotational and translational temperatures provides evidence of faster rotational thermalization for the $\\rm{CH_3F-He}$ system in the limit of low...

  15. Electron ionization LC-MS with supersonic molecular beams--the new concept, benefits and applications.

    Science.gov (United States)

    Seemann, Boaz; Alon, Tal; Tsizin, Svetlana; Fialkov, Alexander B; Amirav, Aviv

    2015-11-01

    A new type of electron ionization LC-MS with supersonic molecular beams (EI-LC-MS with SMB) is described. This system and its operational methods are based on pneumatic spray formation of the LC liquid flow in a heated spray vaporization chamber, full sample thermal vaporization and subsequent electron ionization of vibrationally cold molecules in supersonic molecular beams. The vaporized sample compounds are transferred into a supersonic nozzle via a flow restrictor capillary. Consequently, while the pneumatic spray is formed and vaporized at above atmospheric pressure the supersonic nozzle backing pressure is about 0.15 Bar for the formation of supersonic molecular beams with vibrationally cold sample molecules without cluster formation with the solvent vapor. The sample compounds are ionized in a fly-though EI ion source as vibrationally cold molecules in the SMB, resulting in 'Cold EI' (EI of vibrationally cold molecules) mass spectra that exhibit the standard EI fragments combined with enhanced molecular ions. We evaluated the EI-LC-MS with SMB system and demonstrated its effectiveness in NIST library sample identification which is complemented with the availability of enhanced molecular ions. The EI-LC-MS with SMB system is characterized by linear response of five orders of magnitude and uniform compound independent response including for non-polar compounds. This feature improves sample quantitation that can be approximated without compound specific calibration. Cold EI, like EI, is free from ion suppression and/or enhancement effects (that plague ESI and/or APCI) which facilitate faster LC separation because full separation is not essential. The absence of ion suppression effects enables the exploration of fast flow injection MS-MS as an alternative to lengthy LC-MS analysis. These features are demonstrated in a few examples, and the analysis of the main ingredients of Cannabis on a few Cannabis flower extracts is demonstrated. Finally, the advantages of

  16. Growth of thin films of low molecular weight proteins by matrix assisted pulsed laser evaporation (MAPLE)

    DEFF Research Database (Denmark)

    Matei, Andreea; Schou, Jørgen; Constantinescu, C.;

    2011-01-01

    Thin films of lysozyme and myoglobin grown by matrix assisted pulsed laser evaporation (MAPLE) from a water ice matrix have been investigated. The deposition rate of these two low molecular weight proteins (lysozyme: 14307 amu and myoglobin: 17083 amu) exhibits a maximum of about 1–2 ng/cm2 per...... pulse at a fluence of 1–2 J/cm2 and decreases slowly with increasing fluence. This rate is presumably determined by the matrix rather by the proteins. A significant fraction of the proteins are intact in the film as determined by MALDI (Matrix assisted laser desorption ionization) spectrometry....... The results for lysozyme demonstrate that the fragmentation rate of the proteins during the MAPLE process is not influenced by the pH of the water solution prior to freezing....

  17. Structural and composition investigations at delayered locations of low k integrated circuit device by gas-assisted focused ion beam

    Energy Technology Data Exchange (ETDEWEB)

    Wang, Dandan, E-mail: dandan.wang@globalfoundries.com; Kee Tan, Pik; Yamin Huang, Maggie; Lam, Jeffrey; Mai, Zhihong [Technology Development Department, GLOBALFOUNDRIES Singapore Pte. Ltd., 60 Woodlands Industrial Park D, Street 2, Singapore 738406 (Singapore)

    2014-05-15

    The authors report a new delayering technique – gas-assisted focused ion beam (FIB) method and its effects on the top layer materials of integrated circuit (IC) device. It demonstrates a highly efficient failure analysis with investigations on the precise location. After removing the dielectric layers under the bombardment of an ion beam, the chemical composition of the top layer was altered with the reduced oxygen content. Further energy-dispersive x-ray spectroscopy and Fourier transform infrared analysis revealed that the oxygen reduction lead to appreciable silicon suboxide formation. Our findings with structural and composition alteration of dielectric layer after FIB delayering open up a new insight avenue for the failure analysis in IC devices.

  18. Intense electron beams from GaAs photocathodes as a tool for molecular and atomic physics

    Energy Technology Data Exchange (ETDEWEB)

    Krantz, Claude

    2009-10-28

    We present cesium-coated GaAs photocathodes as reliable sources of intense, quasi-monoenergetic electron beams in atomic and molecular physics experiments. In long-time operation of the Electron Target of the ion storage ring TSR in Heidelberg, cold electron beams could be realised at steadily improving intensity and reliability. Minimisation of processes degrading the quantum efficiency allowed to increase the extractable current to more than 1mA at usable cathode lifetimes of 24 h or more. The benefits of the cold electron beam with respect to its application to electron cooling and electron-ion recombination experiments are discussed. Benchmark experiments demonstrate the superior cooling force and energy resolution of the photoelectron beam compared to its thermionic counterparts. The long period of operation allowed to study the long-time behaviour of the GaAs samples during multiple usage cycles at the Electron Target and repeated in-vacuum surface cleaning by atomic hydrogen exposure. An electron emission spectroscopy setup has been implemented at the photocathode preparation chamber of the Electron Target. Among others, this new facility opened the way to a novel application of GaAs (Cs) photocathodes as robust, ultraviolet-driven electron emitters. Based on this principle, a prototype of an electron gun, designed for implementation at the HITRAP setup at GSI, has been built and taken into operation successfully. (orig.)

  19. Plasma and Beam Production Experiments with HYBRIS, a Microwave-assisted H- Ion source

    International Nuclear Information System (INIS)

    A two-stage ion source concept had been presented a few years ago, consisting of a proven H- ion source and a 2.45-GHz Electron Cyclotron-Resonance (ECR) type ion source, here used as a plasma cathode. This paper describes the experimental development path pursued at Lawrence Berkeley National Laboratory, from the early concept to a working unit that produces plasma in both stages and creates a negative particle beam. Without cesiation applied to the second stage, the H- fraction of this beam is very low, yielding 75 micro-amperes of extracted ion beam current at best. The apparent limitations of this approach and envisaged improvements are discussed

  20. The impact of treatment density and molecular weight for fractional laser-assisted drug delivery

    DEFF Research Database (Denmark)

    Haak, Christina S; Bhayana, Brijesh; Farinelli, William A;

    2012-01-01

    treatment density (% of skin occupied by channels) and molecular weight (MW) for fractional CO(2) laser-assisted drug delivery. AFXL substantially increased intra- and transcutaneous delivery of polyethylene glycols (PEGs) in a MW range from 240 to 4300 Da (Nuclear Magnetic Resonance, p......Ablative fractional lasers (AFXL) facilitate uptake of topically applied drugs by creating narrow open micro-channels into the skin, but there is limited information on optimal laser settings for delivery of specific molecules. The objective of this study was to investigate the impact of laser...

  1. Molecular beam epitaxial growth of tungsten layers embedded in single crystal gallium arsenide

    Energy Technology Data Exchange (ETDEWEB)

    Harbison, J.P.; Hwang, D.M.; Levkoff, J.; Derkits G.E. Jr.

    1985-12-01

    We have been able to fabricate structures which consist of a thin (approx.10 nm) polycrystalline W film embedded in surrounding single crystalline GaAs by molecular beam epitaxy (MBE) using an electron beam evaporation source to deposit W metal in an ultrahigh vacuum MBE growth chamber. The entire deposition sequence can take place at elevated temperature (625--700 /sup 0/C) due to the nonreactive nature of W with respect to GaAs. Reflective high-energy diffraction and transmission electron microscopy indicate that the single crystal GaAs overgrowth proceeds by seeding from the GaAs layer beneath the W through spontaneously occurring perforations in the W layer.

  2. Free vibration analysis of microtubules based on the molecular mechanics and continuum beam theory.

    Science.gov (United States)

    Zhang, Jin; Wang, Chengyuan

    2016-10-01

    A molecular structural mechanics (MSM) method has been implemented to investigate the free vibration of microtubules (MTs). The emphasis is placed on the effects of the configuration and the imperfect boundaries of MTs. It is shown that the influence of protofilament number on the fundamental frequency is strong, while the effect of helix-start number is almost negligible. The fundamental frequency is also found to decrease as the number of the blocked filaments at boundaries decreases. Subsequently, the Euler-Bernoulli beam theory is employed to reveal the physics behind the simulation results. Fitting the Euler-Bernoulli beam into the MSM data leads to an explicit formula for the fundamental frequency of MTs with various configurations and identifies a possible correlation between the imperfect boundary conditions and the length-dependent bending stiffness of MTs reported in experiments.

  3. A bright, cold, velocity-controlled molecular beam by frequency-chirped laser slowing

    CERN Document Server

    Truppe, S; Hambach, M; Fitch, N; Wall, T E; Hinds, E A; Sauer, B E; Tarbutt, M R

    2016-01-01

    Using frequency-chirped radiation pressure slowing we precisely control the velocity of a pulsed CaF molecular beam down to a few m/s, compressing its velocity spread by a factor of 10 while retaining its high brightness. When the final velocity is 15 m/s the flux, measured 1.3 m from the source, is $8 \\times 10^5$ molecules per cm$^2$ per shot in a single rovibrational state. The beam is suitable for loading a magneto-optical trap of molecules. Our method, when combined with transverse laser cooling, can improve the precision of spectroscopic measurements that test fundamental physics. We compare the frequency-chirped slowing method with slowing using frequency-broadened light.

  4. Photostop: Production of zero-velocity molecules by photodissociation in a molecular beam

    CERN Document Server

    Trottier, Alexandre; Wrede, Eckart

    2011-01-01

    We have demonstrated a new, accessible and economical technique, dubbed photostop, for producing high densities of trappable molecules. Direct measurements are presented of NO molecules produced with a narrow velocity distribution centered at zero in the laboratory frame. NO2, initially cooled in a pulsed molecular beam, is photodissociated such that the recoil velocity of the NO photofragments cancels out the velocity of the beam. NO(X^2Pi_3/2, v=0, J=1.5) molecules are observed up to 10 mircoseconds after the dissociation event in the probe volume at an estimated density of 1E7 cm-3 per quantum state and at a translational temperature of 1.6 K. Through the choice of suitable precursors, photostop has the potential to extend the list atoms and molecules that can be slowed or trapped. It should be possible to accumulate density in a trap through consecutive loading of multiple pulses.

  5. Crossed molecular beam studies of unimolecular reaction dynamics. [Angular and velocity distributions

    Energy Technology Data Exchange (ETDEWEB)

    Buss, R.J.

    1979-04-01

    The study of seven radical-molecule reactions using the crossed molecular beam technique with supersonic nozzle beams is reported. Product angular and velocity distributions were obtained and compared with statistical calculations in order to identify dynamical features of the reactions. In the reaction of chlorine and fluorine atoms with vinyl bromide, the product energy distributions are found to deviate from predictions of the statistical model. A similar effect is observed in the reaction of chlorine atoms with 1, 2 and 3-bromopropene. The reaction of oxygen atoms with ICl and CF/sub 3/I has been used to obtain an improved value of the IO bond energy, 55.0 +- 2.0 kcal mol/sup -1/. In all reactions studied, the product energy and angular distributions are found to be coupled, and this is attributed to a kinematic effect of the conservation of angular momentum.

  6. Residual stress in AlN films grown on sapphire substrates by molecular beam epitaxy

    Science.gov (United States)

    Rong, Xin; Wang, Xinqiang; Chen, Guang; Pan, Jianhai; Wang, Ping; Liu, Huapeng; Xu, Fujun; Tan, Pingheng; Shen, Bo

    2016-05-01

    Residual stress in AlN films grown by molecular beam epitaxy (MBE) has been studied by Raman scattering spectroscopy. A strain-free Raman frequency and a biaxial stress coefficient for E2(high) mode are experimentally determined to be 657.8 ± 0.3 cm-1 and 2.4 ± 0.2 cm-1 / GPa, respectively. By using these parameters, the residual stress of a series of AlN layers grown under different buffer layer conditions has been investigated. The residual compressive stress is found to be obviously decreased by increasing the Al/N beam flux ratio of the buffer layer, indicating the generation of tensile stress due to stronger coalescence of AlN grains, as also confirmed by the in-situ reflection high energy electron diffraction (RHEED) monitoring observation. The stronger coalescence does lead to improved quality of AlN films as expected.

  7. Selective-area growth of GaN nanowires on SiO2-masked Si (111) substrates by molecular beam epitaxy

    Science.gov (United States)

    Kruse, J. E.; Lymperakis, L.; Eftychis, S.; Adikimenakis, A.; Doundoulakis, G.; Tsagaraki, K.; Androulidaki, M.; Olziersky, A.; Dimitrakis, P.; Ioannou-Sougleridis, V.; Normand, P.; Koukoula, T.; Kehagias, Th.; Komninou, Ph.; Konstantinidis, G.; Georgakilas, A.

    2016-06-01

    We analyze a method to selectively grow straight, vertical gallium nitride nanowires by plasma-assisted molecular beam epitaxy (MBE) at sites specified by a silicon oxide mask, which is thermally grown on silicon (111) substrates and patterned by electron-beam lithography and reactive-ion etching. The investigated method requires only one single molecular beam epitaxy MBE growth process, i.e., the SiO2 mask is formed on silicon instead of on a previously grown GaN or AlN buffer layer. We present a systematic and analytical study involving various mask patterns, characterization by scanning electron microscopy, transmission electron microscopy, and photoluminescence spectroscopy, as well as numerical simulations, to evaluate how the dimensions (window diameter and spacing) of the mask affect the distribution of the nanowires, their morphology, and alignment, as well as their photonic properties. Capabilities and limitations for this method of selective-area growth of nanowires have been identified. A window diameter less than 50 nm and a window spacing larger than 500 nm can provide single nanowire nucleation in nearly all mask windows. The results are consistent with a Ga diffusion length on the silicon dioxide surface in the order of approximately 1 μm.

  8. Three-dimensional ordering of cold ion beams in a storage ring: A molecular-dynamics simulation study

    International Nuclear Information System (INIS)

    Three-dimensional (3D) ordering of a charged-particle beams circulating in a storage ring is systematically studied with a molecular-dynamics simulation code. An ion beam can exhibit a 3D ordered configuration at ultralow temperature as a result of powerful 3D laser cooling. Various unique characteristics of the ordered beams, different from those of crystalline beams, are revealed in detail, such as the single-particle motion in the transverse and longitudinal directions, and the dependence of the tune depression and the Coulomb coupling constant on the operating points

  9. Three-dimensional ordering of cold ion beams in a storage ring: A molecular-dynamics simulation study

    Energy Technology Data Exchange (ETDEWEB)

    Yuri, Yosuke, E-mail: yuri.yosuke@jaea.go.jp [Takasaki Advanced Radiation Research Institute, Japan Atomic Energy Agency, 1233 Watanuki-machi Takasaki, Gunma 370-1292 Japan (Japan)

    2015-06-29

    Three-dimensional (3D) ordering of a charged-particle beams circulating in a storage ring is systematically studied with a molecular-dynamics simulation code. An ion beam can exhibit a 3D ordered configuration at ultralow temperature as a result of powerful 3D laser cooling. Various unique characteristics of the ordered beams, different from those of crystalline beams, are revealed in detail, such as the single-particle motion in the transverse and longitudinal directions, and the dependence of the tune depression and the Coulomb coupling constant on the operating points.

  10. A modified time-of-flight method for precise determination of high speed ratios in molecular beams

    Energy Technology Data Exchange (ETDEWEB)

    Salvador Palau, A.; Eder, S. D., E-mail: sabrina.eder@uib.no; Kaltenbacher, T.; Samelin, B.; Holst, B. [Department of Physics and Technology, University of Bergen, Allégaten 55, 5007 Bergen (Norway); Bracco, G. [Department of Physics and Technology, University of Bergen, Allégaten 55, 5007 Bergen (Norway); CNR-IMEM, Department of Physics, University of Genova, V. Dodecaneso 33, 16146 Genova (Italy)

    2016-02-15

    Time-of-flight (TOF) is a standard experimental technique for determining, among others, the speed ratio S (velocity spread) of a molecular beam. The speed ratio is a measure for the monochromaticity of the beam and an accurate determination of S is crucial for various applications, for example, for characterising chromatic aberrations in focussing experiments related to helium microscopy or for precise measurements of surface phonons and surface structures in molecular beam scattering experiments. For both of these applications, it is desirable to have as high a speed ratio as possible. Molecular beam TOF measurements are typically performed by chopping the beam using a rotating chopper with one or more slit openings. The TOF spectra are evaluated using a standard deconvolution method. However, for higher speed ratios, this method is very sensitive to errors related to the determination of the slit width and the beam diameter. The exact sensitivity depends on the beam diameter, the number of slits, the chopper radius, and the chopper rotation frequency. We present a modified method suitable for the evaluation of TOF measurements of high speed ratio beams. The modified method is based on a systematic variation of the chopper convolution parameters so that a set of independent measurements that can be fitted with an appropriate function are obtained. We show that with this modified method, it is possible to reduce the error by typically one order of magnitude compared to the standard method.

  11. Molecular beam mass spectrometry with tunable vacuum ultraviolet (VUV) synchrotron radiation

    Energy Technology Data Exchange (ETDEWEB)

    Golan, Amir; Ahmed, Musahid

    2012-01-01

    Tunable soft ionization coupled to mass spectroscopy is a powerful method to investigate isolated molecules, complexes and clusters and their spectroscopy and dynamics.[1-4] Fundamental studies of photoionization processes of biomolecules provide information about electronic structure of these systems. Furthermore determinations of ionization energies and other properties of biomolecules in the gas phase are not trivial, and these experiments provide a platform to generate these data. We have developed a thermal vaporization technique coupled with supersonic molecular beams that provides a gentle way to transport these species into the gas phase. Judicious combination of source gas and temperature allows for formation of dimers and higher clusters of the DNA bases. The focus of this particular work is on the effects of non-covalent interactions, i.e., hydrogen bonding, stacking, and electrostatic interactions, on the ionization energies and proton transfer of individual biomolecules, their complexes and upon micro-hydration by water.[1, 5-9] We have performed experimental and theoretical characterization of the photoionization dynamics of gas-phase uracil and 1,3-methyluracil dimers using molecular beams coupled with synchrotron radiation at the Chemical Dynamics Beamline[10] located at the Advanced Light Source and the experimental details are visualized here. This allowed us to observe the proton transfer in 1,3-dimethyluracil dimers, a system with pi stacking geometry and with no hydrogen bonds[1]. Molecular beams provide a very convenient and efficient way to isolate the sample of interest from environmental perturbations which in return allows accurate comparison with electronic structure calculations[11, 12]. By tuning the photon energy from the synchrotron, a photoionization efficiency (PIE) curve can be plotted which informs us about the cationic electronic states. These values can then be compared to theoretical models and calculations and in turn, explain

  12. Durable Silver Mirror Coating Via Ion Assisted, Electron Beam Evaporation For Large Aperture Optics Project

    Data.gov (United States)

    National Aeronautics and Space Administration — In the Phase I research, Surface Optics Corporation (SOC) demonstrated a durable silver mirror coating based an ion assisted, thermal evaporation process. The...

  13. Lutetium-doped EuO films grown by molecular-beam epitaxy

    OpenAIRE

    Melville, A; Mairoser, T.; Mannhart, J.; Schlom, D. G.; Schmehl, A.; Shai, D. E.; Monkman, E. J.; Harter, J. W.; Heeg, T.; Holländer, B; Schubert, J; Shen, K. M.

    2012-01-01

    The effect of lutetium doping on the structural, electronic, and magnetic properties of epitaxial EuO thin films grown by reactive molecular-beam epitaxy is experimentally investigated. The behavior of Lu-doped EuO is contrasted with doping by lanthanum and gadolinium. All three dopants are found to behave similarly despite differences in electronic configuration and ionic size. Andreev reflection measurements on Lu-doped EuO reveal a spin-polarization of 96% in the conduction band, despite n...

  14. In situ photoelectron spectroscopy of molecular-beam-epitaxy grown surfaces

    CERN Document Server

    Oshima, M; Okabayashi, J; Ono, K

    2003-01-01

    Two in situ high-resolution synchrotron radiation photoelectron spectroscopy (SRPES) systems combined with a molecular beam epitaxy (MBE) chamber for III-V compound semiconductors and a laser MBE chamber for strongly correlated oxide films, respectively, have been designed and fabricated to analyze intrinsic and surface/interface electronic structures of these unique materials. The importance of the in situ SRPES has been demonstrated by the results of 1) Si surface nanostructures, 2) GaAs surfaces/interfaces and nanostructures, 3) MnAs magnetic nanostructures, and 4) strongly-correlated La sub 1 sub - sub x Sr sub x MnO sub 3 surfaces/interfaces and superstructures.

  15. Epitaxial growth and new phase of single crystal Dy by molecular beam epitaxy

    Energy Technology Data Exchange (ETDEWEB)

    Yang, Kai-Yueh; Homma, Hitoshi; Schuller, I.K.

    1987-09-01

    We have grown two novel epitaxial phases of dysprosium (Dy) on vanadium (V) by molecular beam epitaxy technique. Surface and bulk structures are studied by in-situ reflection high energy electron diffraction (RHEED) and x-ray diffraction techniques. The new hcp phases are approx.4% expanded uniformly in-plane (0001), and approx.9% and approx.4% expanded out of plane along the c-axes for non-interrupted and interrupted deposition case, respectively. We also observed (2 x 2), (3 x 3), and (4 x 4) Dy surface reconstruction patterns and a series of transitions as the Dy film thickness increases. 12 refs., 3 figs.

  16. Epitaxial film growth and metastable phases of single crystal Dy by molecular beam epitaxy

    Energy Technology Data Exchange (ETDEWEB)

    Yang, K.; Homma, H.; Schuller, I.K.

    1988-04-15

    We have grown two novel epitaxial phases of dysprosium (Dy) on vanadium (V) by the molecular beam epitaxy technique. Surface structures are studied by in situ reflection high-energy electron diffraction, and bulk structures are studied by x-ray diffraction after removal from the growth chamber. The new hcp phases are approx.4% expanded uniformly in the (0001) plane and approx.9% and approx.4% expanded out of plane, along the c axes, for noninterrupted and interrupted deposition cases, respectively. We also observed (2 x 2), (3 x 3), and (4 x 4) Dy surface reconstruction patterns and a series of structural changes as the Dy film thickness increases.

  17. Universality and geometry dependence in the class of the nonlinear molecular beam epitaxy equation

    OpenAIRE

    Carrasco, I. S. S.; Oliveira, T. J.

    2016-01-01

    We report extensive numerical simulations of growth models belonging to the nonlinear molecular beam epitaxy (nMBE) class, with flat and curved geometries. In both $d=1+1$ and $2+1$, we find that growth regime height distributions (HDs), spatial and temporal covariances are universal, but geometry-dependent, while the critical exponents are the same for flat and curved interfaces. Therefore the nMBE class does split into subclasses, as also does the Kardar-Parisi-Zhang (KPZ) class. Applying t...

  18. Towards precise defect control in layered oxide structures by using oxide molecular beam epitaxy

    OpenAIRE

    Federico Baiutti; Georg Christiani; Gennady Logvenov

    2014-01-01

    In this paper we present the atomic-layer-by-layer oxide molecular beam epitaxy (ALL-oxide MBE) which has been recently installed in the Max-Planck Institute for Solid State Research and we report on its present status, providing some examples that demonstrate its successful application in the synthesis of different layered oxides, with particular reference to superconducting La2CuO4 and insulator-to-metal La2−xSrxNiO4. We briefly review the ALL-oxide MBE technique and its unique capabilities...

  19. Note: A versatile mass spectrometer chamber for molecular beam and temperature programmed desorption experiments

    Science.gov (United States)

    Tonks, James P.; Galloway, Ewan C.; King, Martin O.; Kerherve, Gwilherm; Watts, John F.

    2016-08-01

    A dual purpose mass spectrometer chamber capable of performing molecular beam scattering (MBS) and temperature programmed desorption (TPD) is detailed. Two simple features of this design allow it to perform these techniques. First, the diameter of entrance aperture to the mass spectrometer can be varied to maximize signal for TPD or to maximize angular resolution for MBS. Second, the mass spectrometer chamber can be radially translated so that it can be positioned close to the sample to maximize signal or far from the sample to maximize angular resolution. The performance of this system is described and compares well with systems designed for only one of these techniques.

  20. Reaction Mechanism of Oxygen Atoms with Unsaturated Hydrocarbons by the Crossed-Molecular-Beams Method

    Science.gov (United States)

    Buss, R. J.; Baseman, R. J.; Guozhong, H.; Lee, Y. T.

    1982-04-01

    From a series of studies of the reaction of oxygen atoms with unsaturated hydrocarbons using the crossed molecular beam method, the dominant reaction mechanisms were found to be the simple substitution reactions with oxygen atoms replacing H, Cl, Br atom or alkyl groups. Complication due to secondary reaction was avoided by carrying out experiments under single collisions and observing primary products directly. Primary products were identified by measuring the angular and velocity distributions of products at all the mass numbers which could be detected by the mass spectrometer, and from comparison of these distributions, applying the requirement of energy and momentum conservation.

  1. Luminescence characterization of CdTe:In grown by molecular beam epitaxy

    Science.gov (United States)

    Bassani, F.; Tatarenko, S.; Saminadayar, K.; Bleuse, J.; Magnea, N.; Pautrat, J. L.

    1991-06-01

    We report on the incorporation of indium as a shallow donor in CdTe by molecular beam epitaxy. Using proper surface stoichiometry conditions, we demonstrate that it is possible to incorporate and activate up to 1018 cm-3 indium impurities. The doped layers have been characterized by secondary-ion mass spectroscopy, capacitance-voltage and Hall-effect measurements. Photoluminescence (PL) and resonant excitation of the PL clearly identify indium as the chemical dopant, acting as an effective mass donor with an energy of 14 meV. Incorrect stoichiometry conditions lead to a poor dopant activity and to complex centers formation.

  2. Perspective: Extremely fine tuning of doping enabled by combinatorial molecular-beam epitaxy

    Directory of Open Access Journals (Sweden)

    J. Wu

    2015-06-01

    Full Text Available Chemical doping provides an effective method to control the electric properties of complex oxides. However, the state-of-art accuracy in controlling doping is limited to about 1%. This hampers elucidation of the precise doping dependences of physical properties and phenomena of interest, such as quantum phase transitions. Using the combinatorial molecular beam epitaxy, we improve the accuracy in tuning the doping level by two orders of magnitude. We illustrate this novel method by two examples: a systematic investigation of the doping dependence of interface superconductivity, and a study of the competing ground states in the vicinity of the insulator-to-superconductor transition.

  3. Thermal stability of epitaxial Fe films grown on Si substrates by molecular beam epitaxy

    International Nuclear Information System (INIS)

    Epitaxial Fe films are grown on Si(0 0 1) and Si(1 1 1) substrates by molecular beam epitaxy at room temperature. Several samples of one Fe/Si structure are subjected to rapid thermal annealing from 100 to 500 °C. The annealing impact on the morphological, magnetic properties and interfacial heterostructures of these samples is examined by atomic force microscopy, vibrating sample magnetometer and transmission electron microscopy, respectively. The results demonstrate that the material system Fe/Si grown at room temperature exhibits an abrupt interface and is thermally stable up to a temperature of 150 °C.

  4. Growth of GaSb1-xBix by molecular beam epitaxy

    DEFF Research Database (Denmark)

    Song, Yuxin; Wang, Shumin; Roy, Ivy Saha;

    2012-01-01

    Molecular beam epitaxy for GaSb1-xBix is investigated in this article. The growth window for incorporation of Bi in GaSb was found. Strategies of avoiding formation of Bi droplets and enhancing Bi incorporation were studied. The Bi incorporation was confirmed by SIMS and RBS measurements. The Bi...... concentration in the samples was found to increase with increasing growth temperature and Bi flux. The position of GaSb1-xBix layer peak in XRD rocking curves is found to be correlated to Bi composition. Surface and structural properties of the samples were also investigated. Samples grown on GaSb and Ga...

  5. Demonstration of molecular beam epitaxy and a semiconducting band structure for I-Mn-V compounds

    International Nuclear Information System (INIS)

    Our ab initio theory calculations predict a semiconducting band structure of I-Mn-V compounds. We demonstrate on LiMnAs that high-quality materials with group-I alkali metals in the crystal structure can be grown by molecular beam epitaxy. Optical measurements on the LiMnAs epilayers are consistent with the theoretical electronic structure. Our calculations also reproduce earlier reports of high antiferromagnetic ordering temperature and predict large, spin-orbit-coupling-induced magnetic anisotropy effects. We propose a strategy for employing antiferromagnetic semiconductors in high-temperature semiconductor spintronics.

  6. Deep electron traps in CdTe:In films grown by molecular beam epitaxy

    Energy Technology Data Exchange (ETDEWEB)

    Zakrzewski, A.K.; Dobaczewski, L.; Karczewski, G.; Wojtowicz, T.; Kossut, J. [Institute of Physics, Polish Academy of Science, Warsaw (Poland)

    1995-12-31

    N-type indium CdTe grown on n{sup +}-GaAs molecular beam epitaxy has been studied by the standard deep level transient spectroscopy and the isothermal Laplace-transform deep level transient spectroscopy. It was found that the Cd/Te flux ratio strongly influences the deep level transient spectroscopy results. The unusual temperature dependence of the electron emission rate in films grown at nearly stoichiometric conditions may point out that the observed defect is resonant with the conduction band. (author). 5 refs, 1 fig.

  7. Defects, strain relaxation, and compositional grading in high indium content InGaN epilayers grown by molecular beam epitaxy

    Energy Technology Data Exchange (ETDEWEB)

    Bazioti, C.; Kehagias, Th.; Pavlidou, E.; Komninou, Ph.; Karakostas, Th.; Dimitrakopulos, G. P., E-mail: gdim@auth.gr [Physics Department, Aristotle University of Thessaloniki, GR 541 24 Thessaloniki (Greece); Papadomanolaki, E.; Iliopoulos, E. [Microelectronics Research Group (MRG), IESL, FORTH, P.O. Box 1385, 71110 Heraklion Crete, Greece and Physics Department, University of Crete, Heraklion Crete (Greece); Walther, T. [Department of Electronic & Electrical Engineering, University of Sheffield, Sheffield S1 3JD (United Kingdom); Smalc-Koziorowska, J. [Institute of High Pressure Physics, Polish Academy of Sciences, Sokolowska 29/37, 01-142 Warsaw (Poland)

    2015-10-21

    We investigate the structural properties of a series of high alloy content InGaN epilayers grown by plasma-assisted molecular beam epitaxy, employing the deposition temperature as variable under invariant element fluxes. Using transmission electron microscopy methods, distinct strain relaxation modes were observed, depending on the indium content attained through temperature adjustment. At lower indium contents, strain relaxation by V-pit formation dominated, with concurrent formation of an indium-rich interfacial zone. With increasing indium content, this mechanism was gradually substituted by the introduction of a self-formed strained interfacial InGaN layer of lower indium content, as well as multiple intrinsic basal stacking faults and threading dislocations in the rest of the film. We show that this interfacial layer is not chemically abrupt and that major plastic strain relaxation through defect introduction commences upon reaching a critical indium concentration as a result of compositional pulling. Upon further increase of the indium content, this relaxation mode was again gradually succeeded by the increase in the density of misfit dislocations at the InGaN/GaN interface, leading eventually to the suppression of the strained InGaN layer and basal stacking faults.

  8. Effects of growth temperature on nonpolar a-plane InN grown by molecular beam epitaxy

    Energy Technology Data Exchange (ETDEWEB)

    Rajpalke, Mohana K.; Bhat, Thirumaleshwara N.; Krupanidhi, S.B. [Materials Research Centre, Indian Institute of Science, Bangalore-560012 (India); Roul, Basanta [Materials Research Centre, Indian Institute of Science, Bangalore-560012 (India); Central Research Laboratory, Bharat Electronics, Bangalore-560013 (India); Kumar, Mahesh [Materials Research Centre, Indian Institute of Science, Bangalore-560012 (India); Centre of Excellence in Information and Communication Technology, Indian Institute of Technology, Jodhpur-342011 (India); Sinha, Neeraj [Office of Principal Scientific Advisor, Government of India, New Delhi 110011 (India); Department of Materials Science, Gulbarga University, Gulbarga 585 106 (India); Jali, V.M. [Department of Physics, Gulbarga University, Gulbarga 585 106 (India)

    2014-04-15

    Nonpolar a-plane InN films were grown on r-plane sapphire substrate by plasma assisted molecular beam epitaxy with GaN underlayer. Effect of growth temperature on structural, morphological, and optical properties has been studied. The growth of nonpolar a-plane (1 1 -2 0) orientation was confirmed by high resolution X-ray diffraction study. The film grown at 500 C shows better crystallinity with the rocking curve FWHM 0.67 and 0.85 along [0 0 0 1] and [1 -1 0 0] directions, respectively. Scanning electron micrograph shows formation of Indium droplets at higher growth temperature. Room tem-perature absorption spectra show growth temperature dependent band gap variation from 0.74-0.81 eV, consistent with the expected Burstein-Moss effect. The rectifying behaviour of the I-V curve indicates the existence of Schottky barrier at the InN and GaN interface. (copyright 2014 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  9. Impact of growth parameters on the morphology and microstructure of epitaxial GaAs nanowires grown by molecular beam epitaxy

    Energy Technology Data Exchange (ETDEWEB)

    Lu, Z.Y. [National Laboratory for Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, 500 Yu Tian Road, Shanghai 200083 (China); Chen, P.P., E-mail: ppchen@mail.sitp.ac.cn [National Laboratory for Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, 500 Yu Tian Road, Shanghai 200083 (China); Liao, Z.M. [Materials Engineering, University of Queensland, St. Lucia, QLD 4072 (Australia); Shi, S.X.; Sun, Y.; Li, T.X.; Zhang, Y.H. [National Laboratory for Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, 500 Yu Tian Road, Shanghai 200083 (China); Zou, J. [Materials Engineering, University of Queensland, St. Lucia, QLD 4072 (Australia); Center for Microscopy and Microanalysis, University of Queensland, St. Lucia, QLD 4072 (Australia); Lu, W. [National Laboratory for Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, 500 Yu Tian Road, Shanghai 200083 (China)

    2013-12-15

    Highlights: •Defect-free wurtzite GaAs nanowires were obtained by MBE at low growth temperature. •Some GaAs nanowires grown at low temperature show the morphology of two shoulders. •High growth temperature favors the formation of nanowires with uniform diameter. •Low V/III flux ratio causes many kinked GaAs nanowires. •A phase separation of the catalyst is observed under very Ga-rich condition. -- Abstract: The effect of the growth temperature and V/III flux ratio on the morphology and microstructure of GaAs nanowires grown on GaAs (1 1 1){sub B} substrates by Au-assisted molecular beam epitaxy with solid As{sub 4} source was investigated. It has been found that a low growth temperature of 400 °C can result in defect-free wurtzite structured nanowire with syringe-like morphology, while nanowires with more homogeneous diameter can be obtained at high temperatures (500 °C and 550 °C) with many stacking faults. It was also found that, at a low V/III flux ratio, GaAs nanowires had a shrinking neck section, while a high V/III flux ratio may result in disappearance of the shrinking necking section. For the Ga very rich condition, a phase separation of the catalysts can be observed, leaving a small Au–Ga droplet covered by the outer pure Ga droplet.

  10. Fabrication of single TiO2 nanotube devices with Pt interconnections using electron- and ion-beam-assisted deposition

    Science.gov (United States)

    Lee, Mingun; Cha, Dongkyu; Huang, Jie; Ha, Min-Woo; Kim, Jiyoung

    2016-06-01

    Device fabrication using nanostructured materials, such as nanotubes, requires appropriate metal interconnections between nanotubes and electrical probing pads. Here, electron-beam-assisted deposition (EBAD) and ion-beam-assisted deposition (IBAD) techniques for fabrication of Pt interconnections for single TiO2 nanotube devices are investigated. IBAD conditions were optimized to reduce the leakage current as a result of Pt spreading. The resistivity of the IBAD-Pt was about three orders of magnitude less than that of the EBAD-Pt, due to low carbon concentration and Ga doping, as indicated by X-ray photoelectron spectroscopy analysis. The total resistances of single TiO2 nanotube devices with EBAD- or IBAD-Pt interconnections were 3.82 × 1010 and 4.76 × 108 Ω, respectively. When the resistivity of a single nanotube is low, the high series resistance of EBAD-Pt cannot be ignored. IBAD is a suitable method for nanotechnology applications, such as photocatalysis and biosensors.

  11. AMORPHIZATION IN Nb-M (M=Fe, Co, Ni) BINARY METAL SYSTEMS INDUCED BY ION BEAM ASSISTED DEPOSITION (IBAD)

    Institute of Scientific and Technical Information of China (English)

    F. Pan; F. Zeng; B. Zhao

    2002-01-01

    Ion beam assisted deposition technique (IBAD) was utilized to systematically studyamorphization in binary metal systems of Nb-magnetic element, i.e., Nb-M (M=Fe,Co or Ni). The glass forming range terned as Nb fraction of Nb-Fe system was about34at.% to 56at.%, that of Nb-Co system was about 32at.% to 72at.% and that of Nb-Ni about 20at.% to 80at.%. Similar percolation patterns were found in amorphousalloy films. The fractal dimensions of the percolation patterns approach to 2, whichindicates 2-D layer growth for amorphous phases. It is regarded that the assistedAr+ ion beam duringthe deposition process plays important role for the 2-D layergrowth. Some metastable crystalline phases were obtained in these three systems byIBAD, e.g., bcc supersaturated solid solutions in Nb-Fe and Nb-Co systems, fcc andhcp phases in Nb-Co and Nb-Ni systems. The formation and competing between theamorphous and the metastable crystalline phases were determined by both the phases'thermodynamic states in binary metal systems and kinetics during IBAD process.

  12. Measuring the Density of a Molecular Cluster Injector via Visible Emission from an Electron Beam

    Energy Technology Data Exchange (ETDEWEB)

    Lundberg, D. P.; Kaita, R.; Majeski, R. M.; Stotler, D. P.

    2010-06-28

    A method to measure the density distribution of a dense hydrogen gas jet is pre- sented. A Mach 5.5 nozzle is cooled to 80K to form a flow capable of molecular cluster formation. A 250V, 10mA electron beam collides with the jet and produces Hα emission that is viewed by a fast camera. The high density of the jet, several 1016cm-3, results in substantial electron depletion, which attenuates the Hα emission. The attenuated emission measurement, combined with a simplified electron-molecule collision model, allows us to determine the molecular density profile via a simple iterative calculation.

  13. Facility for low-temperature spin-polarized-scanning tunneling microscopy studies of magnetic/spintronic materials prepared in situ by nitride molecular beam epitaxy

    Energy Technology Data Exchange (ETDEWEB)

    Lin, Wenzhi; Foley, Andrew; Alam, Khan; Wang, Kangkang; Liu, Yinghao; Chen, Tianjiao; Pak, Jeongihm; Smith, Arthur R., E-mail: smitha2@ohio.edu [Department of Physics and Astronomy, Nanoscale and Quantum Phenomena Institute, Ohio University, Athens, Ohio 45701 (United States)

    2014-04-15

    Based on the interest in, as well as exciting outlook for, nitride semiconductor based structures with regard to electronic, optoelectronic, and spintronic applications, it is compelling to investigate these systems using the powerful technique of spin-polarized scanning tunneling microscopy (STM), a technique capable of achieving magnetic resolution down to the atomic scale. However, the delicate surfaces of these materials are easily corrupted by in-air transfers, making it unfeasible to study them in stand-alone ultra-high vacuum STM facilities. Therefore, we have carried out the development of a hybrid system including a nitrogen plasma assisted molecular beam epitaxy/pulsed laser epitaxy facility for sample growth combined with a low-temperature, spin-polarized scanning tunneling microscope system. The custom-designed molecular beam epitaxy growth system supports up to eight sources, including up to seven effusion cells plus a radio frequency nitrogen plasma source, for epitaxially growing a variety of materials, such as nitride semiconductors, magnetic materials, and their hetero-structures, and also incorporating in situ reflection high energy electron diffraction. The growth system also enables integration of pulsed laser epitaxy. The STM unit has a modular design, consisting of an upper body and a lower body. The upper body contains the coarse approach mechanism and the scanner unit, while the lower body accepts molecular beam epitaxy grown samples using compression springs and sample skis. The design of the system employs two stages of vibration isolation as well as a layer of acoustic noise isolation in order to reduce noise during STM measurements. This isolation allows the system to effectively acquire STM data in a typical lab space, which during its construction had no special and highly costly elements included, (such as isolated slabs) which would lower the environmental noise. The design further enables tip exchange and tip coating without

  14. Facility for low-temperature spin-polarized-scanning tunneling microscopy studies of magnetic/spintronic materials prepared in situ by nitride molecular beam epitaxy

    International Nuclear Information System (INIS)

    Based on the interest in, as well as exciting outlook for, nitride semiconductor based structures with regard to electronic, optoelectronic, and spintronic applications, it is compelling to investigate these systems using the powerful technique of spin-polarized scanning tunneling microscopy (STM), a technique capable of achieving magnetic resolution down to the atomic scale. However, the delicate surfaces of these materials are easily corrupted by in-air transfers, making it unfeasible to study them in stand-alone ultra-high vacuum STM facilities. Therefore, we have carried out the development of a hybrid system including a nitrogen plasma assisted molecular beam epitaxy/pulsed laser epitaxy facility for sample growth combined with a low-temperature, spin-polarized scanning tunneling microscope system. The custom-designed molecular beam epitaxy growth system supports up to eight sources, including up to seven effusion cells plus a radio frequency nitrogen plasma source, for epitaxially growing a variety of materials, such as nitride semiconductors, magnetic materials, and their hetero-structures, and also incorporating in situ reflection high energy electron diffraction. The growth system also enables integration of pulsed laser epitaxy. The STM unit has a modular design, consisting of an upper body and a lower body. The upper body contains the coarse approach mechanism and the scanner unit, while the lower body accepts molecular beam epitaxy grown samples using compression springs and sample skis. The design of the system employs two stages of vibration isolation as well as a layer of acoustic noise isolation in order to reduce noise during STM measurements. This isolation allows the system to effectively acquire STM data in a typical lab space, which during its construction had no special and highly costly elements included, (such as isolated slabs) which would lower the environmental noise. The design further enables tip exchange and tip coating without

  15. Electron beam pumped III-V nitride vertical cavity surface emitting lasers grown by molecular beam epitaxy

    Science.gov (United States)

    Ng, Hock Min

    The design and fabrication by molecular beam epitaxy of a prototype vertical cavity laser based on the III-V nitrides were investigated in this work. The bottom mirror of the laser consists of distributed Bragg reflectors (DBRs) based on quarterwave AlN (or AlxGa1-xN) and GaN layers. Such DBRs were designed for maximum reflectivity in the spectral region from 390--600 nm. The epitaxial growth of these two binaries on each other revealed that while AlN grows on GaN in a two-dimensional mode (Frank-van der Merwe mode), GaN grows on AlN in a three-dimensional mode (Stranski-Krastanov mode). In spite of that, DBRs with peak reflectance up to 99% and bandwidths of 45nm were fabricated. The measured reflectance spectra were compared with simulations using the transmission matrix method. The mechanical stability of these DBR structures due to non-uniform distribution of strain arising from lattice or thermal mismatch of the various components were also addressed. The active region of the laser consists of InGaN/GaN multiple quantum wells (MQWs). The existence of up to the third order diffraction peaks in the x-ray diffraction spectra suggests that the interfaces between InGaN and GaN are sharp with little interdiffusion at the growth temperature. The photoluminescence and cathodoluminescence spectra were analyzed to determine the optical quality of the MQWs. The best MQWs were shown to have a single emission peak at 397nm with full width half maximum (FWHM) of 11nm. Cathodoluminescence studies showed that there are spatially localized areas of intense light emission. The complete device was formed on (0001) sapphire substrates using the previously described DBRs as bottom mirrors and the MQWs as the active region. The top mirror of the device consists of metallic silver. The device was pumped by an electron beam from the top mirror side and the light output was collected from the sapphire side. Measurements at 100K showed narrowing of the linewidth with increasing pump

  16. Cluster ion beam assisted fabrication of metallic nanostructures for plasmonic applications

    Science.gov (United States)

    Saleem, Iram; Tilakaratne, Buddhi P.; Li, Yang; Bao, Jiming; Wijesundera, Dharshana N.; Chu, Wei-Kan

    2016-08-01

    We report a high-throughput, single-step method for fabricating rippled plasmonic nanostructure arrays via self-assembly induced by oblique angle cluster ion beam irradiation of metal surfaces. This approach does not require lithographic or chemical processes and has the prominent advantage of possible large surface area coverage and applicability to different starting materials. The polarization dependent plasmonic property of the gold nano-ripple is due to their one dimension structure. The localized plasmon resonance frequency of synthesized nano-ripple arrays is tunable by changing nano-ripple dimensions that can be engineered by changing the cluster ion beam irradiation parameters. In this specific case presented, using 30 keV Ar-gas cluster ion beam, we fabricate gold nano-ripple arrays that show localized plasmon resonance in the visible range through near IR range, tunable by varying cluster ion irradiation fluence.

  17. High quality YBCO superconductive thin films fabricated by laser molecular beam epitaxy

    Institute of Scientific and Technical Information of China (English)

    CHEN; Fan

    2001-01-01

    [1]Hirata,K.,Yamamoto,K.,Iijinma,J.et al.,Tunneling measurements on superconductor/insulator/superconductor junctions using single-crystal YBa2Cu3O7-x thin films,Appl.Phys.Lett.,1990,56(7):683-685.[2]Kingston,J.J.,Wellstood,F.C.,Lerch,P.et al.,Multilayer YBa2Cu3Ox-SrTiO3-YBa2Cu3Ox films for insulating crossovers,Appl.Phys.Lett.,1990,56(2):189-191.[3]Grundler,D.,Krumme,J.P.,David,B.et al.,YBa2Cu3O7 ramp-type junctions and superconducting quantum interference devices with an ultra thin barrier of NdGaO3,Appl.Phys.Lett.,1994,65(14):1841-1843.[4]Yang Guozhen,Lu Huibin,Chen Zhenghao et al.,Laser molecular beam epitaxy system and its key technologies,Science in China (in Chinese),Ser.A,1998,28(3):260-265.[5]Wang Ning,Lu Huibin,Chen,W.Z.et al.,Morphology and microstructure of BaTiO3/SrTiO3 superlattices grown on SrTiO3 by laser molecular-beam epitaxy,Appl.Phys.Lett.,1999,75(22):3464-3466.[6]Chen Li-Chyng,Particulates generated by pulsed laser ablation,in Pulsed Laser Deposition of Thin Films (eds.Chrisey,D.B.,Hulber,G.K.),New York:John Wiley & Sons,Inc.,1994,167-198.[7]Wang,H.S.,Dietsche,W.,Eissler,D.et al.,Molecular beam epitaxial growth and structure properties of DyBa2Cu3O7-y,J.Crys.Growth,1993,126:565-577.[8]Kita,R.,Hase,T.,Itti,R.et al.,Synthesis of CuO films using mass-separated,low-energy O+ ion beams,Appl.Phys.Lett.,1992,60(21):2684-2685.[9]Lu Huibin,Zhou Yueliang,Yang Guozhen et al.,Active gas source for thin film preparation,Chinese Patent (in Chinese),1996,No.ZL 96219046.2.[10]Wang Jing,Chen Fan,Zhao Tong et al.,Fabrication of high stable DC-SQUIDS with L-MBE YBCO thin films,Chinese Journal of Low Temperature Physics (in Chinese),1999,21(1):13-16.

  18. In situ surface/interface x-ray diffractometer for oxide molecular beam epitaxy

    Energy Technology Data Exchange (ETDEWEB)

    Lee, J. H. [Advanced Photon Source, Argonne National Laboratory, Argonne, Illinois 60439, USA; Tung, I. C. [Advanced Photon Source, Argonne National Laboratory, Argonne, Illinois 60439, USA; Department of Materials Science and Engineering, Northwestern University, Evanston, Illinois 60208, USA; Chang, S. -H. [Materials Science Division, Argonne National Laboratory, Argonne, Illinois 60439, USA; Bhattacharya, A. [Materials Science Division, Argonne National Laboratory, Argonne, Illinois 60439, USA; Fong, D. D. [Materials Science Division, Argonne National Laboratory, Argonne, Illinois 60439, USA; Freeland, J. W. [Advanced Photon Source, Argonne National Laboratory, Argonne, Illinois 60439, USA; Hong, Hawoong [Advanced Photon Source, Argonne National Laboratory, Argonne, Illinois 60439, USA

    2016-01-01

    In situ studies of oxide molecular beam epitaxy by synchrotron x-ray scattering has been made possible by upgrading an existing UHV/molecular beam epitaxy (MBE) six-circle diffractometer system. For oxide MBE growth, pure ozone delivery to the chamber has been made available, and several new deposition sources have been made available on a new 12 in. CF (ConFlat, a registered trademark of Varian, Inc.) flange. X-ray diffraction has been used as a major probe for film growth and structures for the system. In the original design, electron diffraction was intended for the secondary diagnostics available without the necessity of the x-ray and located at separate positions. Deposition of films was made possible at the two diagnostic positions. And, the aiming of the evaporation sources is fixed to the point between two locations. Ozone can be supplied through two separate nozzles for each location. Also two separate thickness monitors are installed. Additional features of the equipment are also presented together with the data taken during typical oxide film growth to illustrate the depth of information available via in situ x-ray techniques.

  19. Molecular beam deposition and characterization of thin organic films on metals for applications in organic electronics

    Energy Technology Data Exchange (ETDEWEB)

    Witte, G.; Woell, C. [Physikalische Chemie I, Ruhr-Universitaet Bochum, 44780 Bochum (Germany)

    2008-03-15

    The deposition of organic thin films on metal substrates using molecular beam deposition will be reviewed with a special emphasis on molecules which exhibit high charge carrier mobilities and are thus suited to be used as organic semiconductors (OSCs), namely pentacene, rubrene and perylene. Special emphasis will be on aspects of organic molecular beam deposition (OMBD) relevant for the device performance in organic field effect transistors (OFETs), in particular with regard to avoiding or minimizing structural defects at support/OSC interfaces. In addition, another aspect governing - and often limiting - charge injection at electrodes into an OSC, electronic level alignment at molecule/metal interfaces, are discussed in the context of recent accurate ab-initio electronic structure calculations. Finally, we present a novel experimental approach to determine charge transport properties of defect-free, nm-sized OSCs where extrinsic contributions to e.g. charge carrier mobilities can be strictly excluded, thus opening the way towards the determination of true intrinsic OSC properties. (copyright 2008 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  20. In situ surface/interface x-ray diffractometer for oxide molecular beam epitaxy

    Energy Technology Data Exchange (ETDEWEB)

    Lee, J. H.; Freeland, J. W.; Hong, Hawoong, E-mail: hhong@aps.anl.gov [Advanced Photon Source, Argonne National Laboratory, Argonne, Illinois 60439 (United States); Tung, I. C. [Advanced Photon Source, Argonne National Laboratory, Argonne, Illinois 60439 (United States); Department of Materials Science and Engineering, Northwestern University, Evanston, Illinois 60208 (United States); Chang, S.-H.; Bhattacharya, A.; Fong, D. D. [Materials Science Division, Argonne National Laboratory, Argonne, Illinois 60439 (United States)

    2016-01-15

    In situ studies of oxide molecular beam epitaxy by synchrotron x-ray scattering has been made possible by upgrading an existing UHV/molecular beam epitaxy (MBE) six-circle diffractometer system. For oxide MBE growth, pure ozone delivery to the chamber has been made available, and several new deposition sources have been made available on a new 12 in. CF (ConFlat, a registered trademark of Varian, Inc.) flange. X-ray diffraction has been used as a major probe for film growth and structures for the system. In the original design, electron diffraction was intended for the secondary diagnostics available without the necessity of the x-ray and located at separate positions. Deposition of films was made possible at the two diagnostic positions. And, the aiming of the evaporation sources is fixed to the point between two locations. Ozone can be supplied through two separate nozzles for each location. Also two separate thickness monitors are installed. Additional features of the equipment are also presented together with the data taken during typical oxide film growth to illustrate the depth of information available via in situ x-ray techniques.

  1. Investigation of the silicon ion density during molecular beam epitaxy growth

    CERN Document Server

    Eifler, G; Ashurov, K; Morozov, S

    2002-01-01

    Ions impinging on a surface during molecular beam epitaxy influence the growth and the properties of the growing layer, for example, suppression of dopant segregation and the generation of crystal defects. The silicon electron gun in the molecular beam epitaxy (MBE) equipment is used as a source for silicon ions. To use the effect of ion bombardment the mechanism of generation and distribution of ions was investigated. A monitoring system was developed and attached at the substrate position in the MBE growth chamber to measure the ion and electron densities towards the substrate. A negative voltage was applied to the substrate to modify the ion energy and density. Furthermore the current caused by charge carriers impinging on the substrate was measured and compared with the results of the monitoring system. The electron and ion densities were measured by varying the emission current of the e-gun achieving silicon growth rates between 0.07 and 0.45 nm/s and by changing the voltage applied to the substrate betw...

  2. In situ surface/interface x-ray diffractometer for oxide molecular beam epitaxy.

    Science.gov (United States)

    Lee, J H; Tung, I C; Chang, S-H; Bhattacharya, A; Fong, D D; Freeland, J W; Hong, Hawoong

    2016-01-01

    In situ studies of oxide molecular beam epitaxy by synchrotron x-ray scattering has been made possible by upgrading an existing UHV/molecular beam epitaxy (MBE) six-circle diffractometer system. For oxide MBE growth, pure ozone delivery to the chamber has been made available, and several new deposition sources have been made available on a new 12 in. CF (ConFlat, a registered trademark of Varian, Inc.) flange. X-ray diffraction has been used as a major probe for film growth and structures for the system. In the original design, electron diffraction was intended for the secondary diagnostics available without the necessity of the x-ray and located at separate positions. Deposition of films was made possible at the two diagnostic positions. And, the aiming of the evaporation sources is fixed to the point between two locations. Ozone can be supplied through two separate nozzles for each location. Also two separate thickness monitors are installed. Additional features of the equipment are also presented together with the data taken during typical oxide film growth to illustrate the depth of information available via in situ x-ray techniques. PMID:26827327

  3. Investigation of the silicon ion density during molecular beam epitaxy growth

    International Nuclear Information System (INIS)

    Ions impinging on a surface during molecular beam epitaxy influence the growth and the properties of the growing layer, for example, suppression of dopant segregation and the generation of crystal defects. The silicon electron gun in the molecular beam epitaxy (MBE) equipment is used as a source for silicon ions. To use the effect of ion bombardment the mechanism of generation and distribution of ions was investigated. A monitoring system was developed and attached at the substrate position in the MBE growth chamber to measure the ion and electron densities towards the substrate. A negative voltage was applied to the substrate to modify the ion energy and density. Furthermore the current caused by charge carriers impinging on the substrate was measured and compared with the results of the monitoring system. The electron and ion densities were measured by varying the emission current of the e-gun achieving silicon growth rates between 0.07 and 0.45 nm/s and by changing the voltage applied to the substrate between 0 to -1000 V. The dependencies of ion and electron densities were shown and discussed within the framework of a simple model. The charged carrier densities measured with the monitoring system enable to separate the ion part of the substrate current and show its correlation to the generation rate. Comparing the ion density on the whole substrate and in the center gives a hint to the ion beam focusing effect. The maximum ion and electron current densities obtained were 0.40 and 0.61 μA/cm2, respectively

  4. Crystal assisted experiments for multi-disciplinary physics with heavy ion beams at GANIL

    Science.gov (United States)

    Dauvergne, Denis

    2015-07-01

    We present a review of the channeling and blocking experiments that have been performed at GANIL during the 30 years of stable beam operation, with the strong support of the multi-disciplinary CIRIL-CIMAP laboratory. These experiments combine atomic physics, solid state physics and nuclear physics.

  5. Reactions of Laser Ablated Metal Plasma with Molecular Alcohol Beams: Dependence of the Produced Cluster Ion Species on the Beam Condition

    Institute of Scientific and Technical Information of China (English)

    NIU Dong-Mei; LI Hai-Yang; ZHANG Shu-Dong

    2006-01-01

    The gas phase reactions of metal plasma with alcohol clusters were studied by time of flight mass spectrometry(TOFMS) using laser ablation-molecular beam (LAMB) method. The significant dependence of the product cluster ions on the molecular beam conditions was observed. When the plasma acted on the low density parts of the pulsed molecular beam, the metal-alcohol complexes M+An (M=Cu, Al, Mg, Ni and A=C2H5OH, CH3OH) were the dominant products, and the sizes of product ion clusters were smaller. While the plasma acted on the high density part of the beam, however, the main products turned to be protonated alcohol clusters H+An and, as the reactions of plasma with methanol were concerned, the protonated water-methanol complexes H3O+(CH3OH)n with a larger size(n≤ 12 for ethanol and n≤24 for methanol). Similarly, as the pressure of the carrier helium gas was varied from1 × 105 to 5 × 105 Pa, the main products were changed from M+An to H+An and the sizes of the clusters also increased. The changes in the product clusters were attributed to the different formation mechanism of the output ions,that is, the M+An ions came from the reaction of metal ion with alcohol clusters, while H+An mainly from collisional reaction of electron with alcohol clusters.

  6. Methods for assisting recovery of damaged brain and spinal cord and treating various diseases using arrays of x-ray microplanar beams

    Science.gov (United States)

    Dilmanian, F. Avraham; Anchel, David J.; Gaudette, Glenn; Romanelli, Pantaleo; Hainfeld, James

    2010-06-29

    A method of assisting recovery of an injury site of the central nervous system (CNS) or treating a disease includes providing a therapeutic dose of X-ray radiation to a target volume through an array of parallel microplanar beams. The dose to treat CNS injury temporarily removes regeneration inhibitors from the irradiated site. Substantially unirradiated cells surviving between beams migrate to the in-beam portion and assist recovery. The dose may be staggered in fractions over sessions using angle-variable intersecting microbeam arrays (AVIMA). Additional doses are administered by varying the orientation of the beams. The method is enhanced by injecting stem cells into the injury site. One array or the AVIMA method is applied to ablate selected cells in a target volume associated with disease for palliative or curative effect. Atrial fibrillation is treated by irradiating the atrial wall to destroy myocardial cells while continuously rotating the subject.

  7. Effect of ion-beam assisted deposition on the film stresses of TiO2 and SiO2 and stress control

    Institute of Scientific and Technical Information of China (English)

    Yu-Qiong Li; Hua-Qing Wang; Wu-Yu Wang; Zhi-Nong Yu; He-Shan Liu; Gang Jin

    2012-01-01

    Based on Hartmann-Shack sensor technique,an online thin film stress measuring system was introduced to measure the film stresses of TiO2 and SiO2,and comparison was made between the film stresses prepared respectively by the conventional process and the ion-beam assisted deposition.The effect of ion-beam assisted deposition on the film stresses of TiO2 and SiO2 was investigated in details,and the stress control methodologies using on-line adjustment and film doping were put forward.The results show that the film stress value of TiO2 prepared by ion-beam assisted deposition is 40 MPa lower than that prepared by conventional process,and the stress of TiO2 film changes gradually from tensile stress into compressive stress with increasing ion energy; while the film stress of SiO2 is a tensile stress under ion-beam assisted deposition because of the ion-beam sputtering effect,and the film refractive index decreases with increasing ion energy.A dynamic film stress control can be achieved through in-situ adjustment of the processing parameters based on the online film stress measuring technique,and the intrinsic stress of film can be effectively changed through film doping.

  8. Single palladium nanowire growth in place assisted by dielectrophoresis and focused ion beam.

    Science.gov (United States)

    La Ferrara, Vera; Alfano, Brigida; Massera, Ettore; Di Francia, Girolamo

    2009-05-01

    Here we report, for the first time, on the combined use of Focused Ion Beam and Dielectrophoresis techniques for the fabrication of a nanodevice whose operating mechanism relies on a single palladium nanowire. Focused Ion Beam is used to deposit, without photolithographic masks, platinum microelectrodes on a silicon/silicon nitride substrate. Dielectrophoresis is employed for assembling the palladium nanowire, starting from a saturated palladium particles solution, and precisely positioning it between the nanocontacts. The nanodevice works as a hydrogen sensor, confirming the reliability of technology. Its electrical response has been recorded, at room temperature, in a dynamic environment, where different hydrogen concentrations, from 0.1% to 4% in dry air, have been introduced. Its sensitivity, towards 0.1% to 1% gas concentrations in dry air, has been calculated, too.

  9. Effects of Laser Beam Width on the Diameter and Molecular Weight of Laser-Electrospun Polylactide Fiber

    OpenAIRE

    TAKASAKI, Midori; Morie, Kengo; Ohkoshi, Yutaka; Hirai, Toshihiro

    2015-01-01

    Effects of spinning conditions (laser beam width, applied voltage, and laser power) on reduction of molecular weight by thermal degradation, fiber diameter, and its evenness were investigated for the laser‐heated electrospinning process of polylactide fiber webs. Thinner fibers were obtained under the conditions of the narrower laser beam width, the lower applied voltage, and the higher laser power. Moreover, the thinner, the more uniform, and less degraded fiber can be obtained for the narro...

  10. High growth rate metal-organic molecular beam epitaxy for the fabrication of GaAs space solar cells

    Energy Technology Data Exchange (ETDEWEB)

    Freundlich, A.; Newman, F.; Monier, C.; Street, S. [University of Houston, TX (United States). Space Vacuum Epitaxy Center; Dargan, P.; Levy, M. [Riber Inc., Edison, NJ (United States)

    2000-06-01

    In this work, the epitaxial growth of GaAs photovoltaic devices using metalorganic molecular beam epitaxy (MOMBE) and chemical beam epitaxy (CBE) with growth rates in excess of 3 {mu}m/h is undertaken. The performance of these preliminary devices offer encouraging evidence for MOMBE and CBE as possible alternatives to the more common metalorganic chemical vapor deposition (MOCVD) for the production of III-V solar cells. (author)

  11. Fluorophore-assisted carbohydrate electrophoresis for the determination of molecular mass of heparins and low-molecular-weight (LMW) heparins.

    Science.gov (United States)

    Buzzega, Dania; Maccari, Francesca; Volpi, Nicola

    2008-11-01

    We report the use of fluorophore-assisted carbohydrate electrophoresis (FACE) to determine the molecular mass (M) values of heparins (Heps) and low-molecular-weight (LMW)-Hep derivatives. Hep are labeled with 8-aminonaphthalene-1,3,6-trisulfonic acid and FACE is able to resolve each fraction as a discrete band depending on their M. After densitometric acquisition, the migration distance of each Hep standard is acquired and the third-grade polynomial calibration standard curve is determined by plotting the logarithms of the M values as a function of migration ratio. Purified Hep samples having different properties, pharmaceutical Heps and various LMW-Heps were analyzed by both FACE and conventional high-performance size-exclusion liquid chromatography (HPSEC) methods. The molecular weight value on the top of the chromatographic peak (Mp), the number-average Mn, weight-average Mw and polydispersity (Mw/Mn) were examined by both techniques and found to be similar. This approach offers certain advantages over the HPSEC method. The derivatization process with 8-aminonaphthalene-1,3,6-trisulfonic acid is complete after 4 h so that many samples may be analyzed in a day also considering that multiple samples can be run simultaneously and in parallel and that a single FACE analysis requires approx. 15 min. Furthermore, FACE is a very sensitive method as it requires approx. 5-10 microg of Heps, about 10-100-fold lower than samples and standards used in HPSEC evaluation. Finally, the utilization of mini-gels allows the use of very low amounts of reagents with neither expensive equipment nor any complicated procedures having to be applied. This study demonstrates that FACE analysis is a sensitive method for the determination of the M values of Heps and LMW-Heps with possible utilization in virtually any kind of research and development such as quality control laboratories due to its rapid, parallel analysis of multiple samples by means of common and simple largely used

  12. Ion-beam assisted deposition of MgO with in situ RHEED monitoring to control Bi-axial texture

    Energy Technology Data Exchange (ETDEWEB)

    Arendt, P. N. (Paul N.); Foltyn, S. R. (Stephen R.); Jia, Quanxi; DePaula, R. F. (Raymond Felix); Dowden, P. C. (Paul C.); Kung, H. (Harriett); Holesinger, T. G. (Terry G.); Stan, L. (Liliana); Emmert, L. A. (Luke A.); Peterson, E. J. (Eric J.); Groves, J. R. (James R.)

    2001-01-01

    We have studied the growth of magnesium oxide using ion-beam assisted deposition (IBAD) to achieve (100) oriented, bi-axially textured films with low mosaic spread, for film thicknesses of 10 nm on silicon substrates. We have refined the process by using reflected high-energy electron diffraction (RHEED) to monitor the growth of IBAD MgO films and found that the diffracted intensity can be used to determine (and ultimately control) final in-plane texture of the film. Here we present results on our work to develop the use of real-time RHEED monitoring to deposit well-oriented IBAD MgO films. The results have been corroborated with extensive grazing-incidence X-ray diffraction (GID). Results of these analyses have allowed us to deposit films on metallic substrates with in-plane mosaic spread less than 7{sup o}.

  13. Microstructure and photoluminescence of Er-doped SiOx films synthesized by ion beam assisted deposition

    Institute of Scientific and Technical Information of China (English)

    Duan Shu-Qing; Tan Na; Zhang Qing-Yu

    2005-01-01

    Er-doped Sio_ films were synthesized at 500℃ by ion beam assisted deposition technique and annealed at 800 and 1100℃ for 2h in the air atomosphere. The analysis by using energy dispersive x-ray spectroscopy showed that the ratio of Si to O decreased from 3 in the as-deposited films to about 1 in the annealed films. The investigation by using transmission electron microscopy and x-ray diffraction inducated that annealing induces a microstructure change from amorphous to crystlline. The grain sizes in the films were about 10 and 40nm when annealed at 800 and 1100℃, respectively. The films annealed at temperatures of 800 and 1100℃ exhibited a sharp photoluminescence (PL) at 1.533μm from the Er centres when pumped by 980nm laser. The influence of microstructure and grain size on the PL from Er-doped Sio_ films has been studies and discussed.

  14. Ferroelectric polarization and resistive switching characteristics of ion beam assisted sputter deposited BaTiO3 thin films

    Science.gov (United States)

    Silva, J. P. B.; Kamakshi, Koppole; Sekhar, K. C.; Moreira, J. Agostinho; Almeida, A.; Pereira, M.; Gomes, M. J. M.

    2016-05-01

    In this work, 150 nm thick polycrystalline BaTiO3 (BTO) films were deposited on Pt/TiO2/SiO2/Si substrate by ion beam assisted sputter deposition technique. The bias voltage dependent resistive switching (RS) and ferroelectric polarization characteristics of Au/BTO/Pt devices are investigated. The devices display the stable bipolar RS characteristics without an initial electroforming process. Fittings to current-voltage (I-V) curves suggest that low and high resistance states are governed, respectively, by filamentary model and trap controlled space charge limited conduction mechanism, where the oxygen vacancies act as traps. Presence of oxygen vacancies is evidenced from the photoluminescence spectrum. The devices also display P-V loops with remnant polarization (Pr) of 5.7 μC/cm2 and a coercive electric field (Ec) of 173.0 kV/cm. The coupling between the ferroelectric polarization and RS effect in BTO films is demonstrated.

  15. Patterned growth of InGaN/GaN quantum wells on freestanding GaN grating by molecular beam epitaxy

    Directory of Open Access Journals (Sweden)

    Wang Yongjin

    2011-01-01

    Full Text Available Abstract We report here the epitaxial growth of InGaN/GaN quantum wells on freestanding GaN gratings by molecular beam epitaxy (MBE. Various GaN gratings are defined by electron beam lithography and realized on GaN-on-silicon substrate by fast atom beam etching. Silicon substrate beneath GaN grating region is removed from the backside to form freestanding GaN gratings, and the patterned growth is subsequently performed on the prepared GaN template by MBE. The selective growth takes place with the assistance of nanoscale GaN gratings and depends on the grating period P and the grating width W. Importantly, coalescences between two side facets are realized to generate epitaxial gratings with triangular section. Thin epitaxial gratings produce the promising photoluminescence performance. This work provides a feasible way for further GaN-based integrated optics devices by a combination of GaN micromachining and epitaxial growth on a GaN-on-silicon substrate. PACS 81.05.Ea; 81.65.Cf; 81.15.Hi.

  16. Study of structural properties of cubic InN films on GaAs(001) substrates by molecular beam epitaxy and migration enhanced epitaxy

    International Nuclear Information System (INIS)

    InN epitaxial films with cubic phase were grown by rf-plasma-assisted molecular beam epitaxy (RF-MBE) on GaAs(001) substrates employing two methods: migration-enhanced epitaxy (MEE) and conventional MBE technique. The films were synthesized at different growth temperatures ranging from 490 to 550 °C, and different In beam fluxes (BEPIn) ranging from 5.9 × 10−7 to 9.7 × 10−7 Torr. We found the optimum conditions for the nucleation of the cubic phase of the InN using a buffer composed of several thin layers, according to reflection high-energy electron diffraction (RHEED) patterns. Crystallographic analysis by high resolution X-ray diffraction (HR-XRD) and RHEED confirmed the growth of c-InN by the two methods. We achieved with the MEE method a higher crystal quality and higher cubic phase purity. The ratio of cubic to hexagonal components in InN films was estimated from the ratio of the integrated X-ray diffraction intensities of the cubic (002) and hexagonal (1011) planes measured by X-ray reciprocal space mapping (RSM). For MEE samples, the cubic phase of InN increases employing higher In beam fluxes and higher growth temperatures. We have obtained a cubic purity phase of 96.4% for a film grown at 510 °C by MEE.

  17. On the use of a O{sub 2}:SF{sub 6} plasma treatment on GaAs processed surfaces for molecular beam epitaxial regrowth

    Energy Technology Data Exchange (ETDEWEB)

    Desplats, O.; Gallo, P.; Doucet, J.B. [LAAS, CNRS, Universite de Toulouse, 7 avenue du Colonel Roche, F-31077 Toulouse Cedex 4 (France); Monier, G.; Bideux, L. [LASMEA, Universite de Clermont II, Campus des Cezeaux-24, Avenue des Landais, F-63177 AUBIERE Cedex (France); Jalabert, L.; Arnoult, A.; Lacoste, G. [LAAS, CNRS, Universite de Toulouse, 7 avenue du Colonel Roche, F-31077 Toulouse Cedex 4 (France); Armand, C.; Voillot, F. [INSA, Universite de Toulouse, Departement de Genie Physique, 135 avenue de Rangueil, F-31077 Toulouse Cedex 4 (France); Fontaine, C. [LAAS, CNRS, Universite de Toulouse, 7 avenue du Colonel Roche, F-31077 Toulouse Cedex 4 (France)], E-mail: fontaine@laas.fr

    2009-01-01

    Preparation of processed GaAs surface cleaning in view of molecular beam epitaxy regrowth by means of a O{sub 2}SF{sub 6} microwave plasma has been investigated. Photoemission, Auger electron spectroscopy, atomic force microscopy and secondary ion mass spectrometry have been used for characterization. The O{sub 2}SF{sub 6} plasma treatment was found to be very efficient for decontaminating the GaAs surface and leads to the formation of an oxide layer that can be taken off by a thermal or low-temperature H-plasma-assisted deoxidation. The levels of oxygen and carbon contaminants at the regrowth interface were measured to be in the range of a standard homoepitaxial layer-epiready substrate interface. Fluorine was observed to be eliminated upon deoxidation while sulphur is present, particularly in the case of low temperature grown layers. This plasma treatment was found to be efficient for preparation of processed GaAs surfaces for molecular beam epitaxial regrowth.

  18. Towards precise defect control in layered oxide structures by using oxide molecular beam epitaxy

    Directory of Open Access Journals (Sweden)

    Federico Baiutti

    2014-05-01

    Full Text Available In this paper we present the atomic-layer-by-layer oxide molecular beam epitaxy (ALL-oxide MBE which has been recently installed in the Max-Planck Institute for Solid State Research and we report on its present status, providing some examples that demonstrate its successful application in the synthesis of different layered oxides, with particular reference to superconducting La2CuO4 and insulator-to-metal La2−xSrxNiO4. We briefly review the ALL-oxide MBE technique and its unique capabilities in the deposition of atomically smooth single-crystal thin films of various complex oxides, artificial compounds and heterostructures, introducing our goal of pursuing a deep investigation of such systems with particular emphasis on structural defects, with the aim of tailoring their functional properties by precise defects control.

  19. Interfaces in InAs/GaSb Superlattices Grown by Molecular Beam Epitaxy

    Institute of Scientific and Technical Information of China (English)

    GUO Jie; SUN Wei-Guo; PENG Zhen-Yu; ZHOU Zhi-Qiang; XU Ying-Qiang; NIU Zhi-Chuan

    2009-01-01

    @@ Short period InAs(4ML)/GaSb(SML) superlattices (SLs) with InSb- and mixed-like (or Ga1-xInxAs1-ySby-like) interfaces (IFs) are grown by molecular-beam epitaxy (MBE) on (001) GaSh substrates at optimized growth temperature. Raman scattering reveals that two kinds of IFs can be formed by controlling shutter sequences. X-ray diffraction (XRD) and atomic force microscopy (AFM) demonstrate that SLs with mixed-like IFs are more sensitive to growth temperature than that with InSb-like IFs. The photoluminescence (PL) spectra of SLs with mixed-like IFs show a stronger intensity and narrower line width than with InSb-like IFs. It is concluded that InAs/GaSb SLs with mixed-like IFs have better crystalline and optical properties.

  20. ELM mitigation by means of supersonic molecular beam and pellet injection on the EAST superconducting tokamak

    Energy Technology Data Exchange (ETDEWEB)

    Hu, J.S., E-mail: hujs@ipp.ac.cn [Institute of Plasma Physics, Chinese Academy of Sciences, P.O. Box 1126, Hefei 230031 (China); Sun, Z.; Li, C.Z.; Zhen, X.W.; Li, J.G.; Guo, H.Y.; Li, J.H.; Wang, L.; Gan, K.F.; Chen, Y.; Ren, J.; Zuo, G.Z.; Yao, X.J.; Hu, L.Q.; Gong, X.Z.; Wan, B.N. [Institute of Plasma Physics, Chinese Academy of Sciences, P.O. Box 1126, Hefei 230031 (China); Zou, X.L. [CEA, IRFM, F-13108 Saint-Paul-lez-Durance (France); Mansfield, D.K. [Princeton Plasma Physics Laboratory, Princeton, NJ 08543 (United States); Liang, Y.F. [Forschungszentrum Jülich GmbH, Association EURATOM-FZ Jülich (Germany); Vinyar, I. [PELIN LLC, Saint Petersburg (Russian Federation)

    2015-08-15

    In this paper, we will present experimental results from EAST on the mitigation of edge localized modes (ELMs) using recently developed deuterium/lithium pellet injections as well as supersonic molecular beam injections (SMBI). Using a Laval nozzle, ELM mitigation with SMBI has been demonstrated in EAST in quasi-steady state. Using a D{sub 2} pellet injector, a giant ELM appears followed by a burst of high frequency ELMs at ∼300 Hz with duration of a few tens of milliseconds. Furthermore, for the first time, a novel technology using a simple rotating impeller to inject sub-millimeter size lithium (Li) granules at speeds of a few tens of meters per second was successfully used to pace ELMs. These experiments indicate that, on EAST, several technologies can contribute to the database supporting ELMs control in future fusion devices, such as ITER.

  1. GaN grown on (1 1 1) single crystal diamond substrate by molecular beam epitaxy

    Science.gov (United States)

    Dussaigne, A.; Malinverni, M.; Martin, D.; Castiglia, A.; Grandjean, N.

    2009-10-01

    GaN epilayers are grown on (1 1 1) oriented single crystal diamond substrate by ammonia-source molecular beam epitaxy. Each step of the growth is monitored in situ by reflection high energy electron diffraction. It is found that a two-dimensional epitaxial wurtzite GaN film is obtained. The surface morphology is smooth: the rms roughness is as low as 1.3 nm for 2×2 μm 2 scan. Photoluminescence measurements reveal pretty good optical properties. The GaN band edge is centred at 3.469 eV with a linewidth of 5 meV. These results demonstrate that GaN heteroepitaxially grown on diamond opens new rooms for high power electronic applications.

  2. Real-time reflectance-difference spectroscopy of GaAs molecular beam epitaxy homoepitaxial growth

    Energy Technology Data Exchange (ETDEWEB)

    Lastras-Martínez, A., E-mail: alm@cactus.iico.uaslp.mx, E-mail: alastras@gmail.com; Ortega-Gallegos, J.; Guevara-Macías, L. E.; Nuñez-Olvera, O.; Balderas-Navarro, R. E.; Lastras-Martínez, L. F. [Instituto de Investigación en Comunicación Optica, Universidad Autónoma de San Luis Potosí, Alvaro Obregón 64, San Luis Potosí, SLP 78000 (Mexico); Lastras-Montaño, L. A. [IBM T. J. Watson Research Center, Yorktown Heights, New York 10598 (United States); Lastras-Montaño, M. A. [Department of Electrical and Computer Engineering, University of California, Santa Barbara, Santa Barbara, California 93106 (United States)

    2014-03-01

    We report on real time-resolved Reflectance-difference (RD) spectroscopy of GaAs(001) grown by molecular beam epitaxy, with a time-resolution of 500 ms per spectrum within the 2.3–4.0 eV photon energy range. Through the analysis of transient RD spectra we demonstrated that RD line shapes are comprised of two components with different physical origins and determined their evolution during growth. Such components were ascribed to the subsurface strain induced by surface reconstruction and to surface stoichiometry. Results reported in this paper render RD spectroscopy as a powerful tool for the study of fundamental processes during the epitaxial growth of zincblende semiconductors.

  3. Chemical intermediate detection following corona discharge on volatile organic compounds: general method using molecular beam techniques

    Energy Technology Data Exchange (ETDEWEB)

    He Luning; Sulkes, Mark, E-mail: cm06acf@tulane.edu [Chemistry Department, Tulane University, New Orleans, LA 70118 (United States)

    2011-07-13

    Nonthermal plasma (NTP)-based treatments of volatile organic compounds (VOCs) have potential for effective environmental remediation. Theory and experiment that consider the basic science pertaining to discharge events have helped improve NTP remediation outcomes. If direct information on early post-discharge chemical intermediates were also available, it would likely lead to additional improvement in NTP remediation outcomes. To this point, however, experiments yielding direct information on post-NTP VOC intermediates have been limited. An approach using supersonic expansion molecular beam methods offers general promise for detection of post-discharge VOC intermediates. To illustrate the potential utility of these methods, we present mass spectra showing the growth of early products formed when pulsed corona discharges were carried out on toluene in He and then in He with added O{sub 2}. Good general detection of neutral post-discharge species was obtained using 800 nm 150 fs photoionization pulses.

  4. InAs/GaAs(001) molecular beam epitaxial growth in a scanning tunnelling microscope

    International Nuclear Information System (INIS)

    The growth on InAs on GaAs(001) has attracted great interest and investigation over the past few decades primarily due to the opto-electronic properties of the self-assembled quantum dot (QD) arrays formed. Scanning tunnelling microscopy (STM) has been extensively employed to investigate the complicated and spontaneous mechanism of QD growth via molecular beam epitaxy (MBE). Classically, combined MBE-STM requires quenching the sample after growth and transferring it to an arsenic-free high vacuum chamber which houses the STM system. However, without access to the phenomenon as a dynamic process a basic understanding remains elusive. In order to access surface dynamics, MBE and STM must be combined into a single element. The system herein discussed allows the operation of MBE sources in an STM system relating to InAs/GaAs(001) surfaces.

  5. Molecular beam epitaxy growth and magnetic properties of Cr-Co-Ga Heusler alloy films

    International Nuclear Information System (INIS)

    We have re-investigated growth and magnetic properties of Cr2CoGa films using molecular beam epitaxy technique. Phase separation and precipitate formation were observed experimentally again in agreement with observation of multiple phases separation in sputtered Cr2CoGa films by M. Meinert et al. However, significant phase separation could be suppressed by proper control of growth conditions. We showed that Cr2CoGa Heusler phase, rather than Co2CrGa phase, constitutes the majority of the sample grown on GaAs(001) at 450 oC. The measured small spin moment of Cr2CoGa is in agreement with predicted HM-FCF nature; however, its Curie temperature is not as high as expected from the theoretical prediction probably due to the off-stoichiometry of Cr2CoGa and the existence of the disorders and phase separation

  6. Growth of semiconductor alloy InGaPBi on InP by molecular beam epitaxy

    International Nuclear Information System (INIS)

    We report the first successful growth of InGaPBi single crystals on InP substrate with Bi concentration far beyond the doping level by gas source molecular beam epitaxy. The InGaPBi thin films reveal excellent surface and structural qualities, making it a promising new III–V compound family member for heterostructures. The strain can be tuned between tensile and compressive by adjusting Ga and Bi compositions. The maximum achieved Bi concentration is 2.2 ± 0.4% confirmed by Rutherford backscattering spectroscopy. Room temperature photoluminescence shows strong and broad light emission at energy levels much smaller than the InP bandgap. (paper)

  7. Real-time reflectance-difference spectroscopy of GaAs molecular beam epitaxy homoepitaxial growth

    Directory of Open Access Journals (Sweden)

    A. Lastras-Martínez

    2014-03-01

    Full Text Available We report on real time-resolved Reflectance-difference (RD spectroscopy of GaAs(001 grown by molecular beam epitaxy, with a time-resolution of 500 ms per spectrum within the 2.3–4.0 eV photon energy range. Through the analysis of transient RD spectra we demonstrated that RD line shapes are comprised of two components with different physical origins and determined their evolution during growth. Such components were ascribed to the subsurface strain induced by surface reconstruction and to surface stoichiometry. Results reported in this paper render RD spectroscopy as a powerful tool for the study of fundamental processes during the epitaxial growth of zincblende semiconductors.

  8. Antimony segregation in stressed SiGe heterostructures grown by molecular beam epitaxy

    International Nuclear Information System (INIS)

    The effects of the growth temperature, composition, and elastic strains in separate layers on the segregation of antimony are studied experimentally for stressed SiGe structures grown by molecular beam epitaxy. It is established that the growth conditions and parameters of the structures exert an interrelated influence on the segregation of Sb: the degree of the influence of the composition and elastic stresses in the SiGe layers on Sb segregation depends on the growth temperature. It is shown that usage of a method previously proposed by us for the selective doping of silicon structures with consideration for the obtained dependences of Sb segregation on the growth conditions and parameters of the SiGe layers makes it possible to form SiGe structures selectively doped with antimony

  9. Fe-doped InN layers grown by molecular beam epitaxy

    International Nuclear Information System (INIS)

    Iron(Fe)-doped InN (InN:Fe) layers have been grown by molecular beam epitaxy. It is found that Fe-doping leads to drastic increase of residual electron concentration, which is different from the semi-insulating property of Fe-doped GaN. However, this heavy n-type doping cannot be fully explained by doped Fe-concentration ([Fe]). Further analysis shows that more unintentionally doped impurities such as hydrogen and oxygen are incorporated with increasing [Fe] and the surface is degraded with high density pits, which probably are the main reasons for electron generation and mobility reduction. Photoluminescence of InN is gradually quenched by Fe-doping. This work shows that Fe-doping is one of good choices to control electron density in InN.

  10. Design and growth of a P N diode by molecular beam epitaxy

    International Nuclear Information System (INIS)

    In this work, design, growth and characterization of a GaAs p-n contact is presented. The contact growth has been performed by Molecular Beam Epitaxy. The n layer with thickness of 1μm and electron concentration of 6 * 1017 cm-3 has been grown on a p-type GaAs substrate with hole concentration of 1 * 1017cm-3. During growth, in situ monitoring of the layer stoichiometry has been made possible by using Reflection High Energy Electron Diffraction technique. After growth characterization was performed by the use of Hall-effect measurement, the results for the carrier concentration was further confirmed by Electrochemical Capacitance-Voltage profiling technique

  11. Cleaning chemistry of InSb(100) molecular beam epitaxy substrates

    Science.gov (United States)

    Vasquez, R. P.; Lewis, B. F.; Grunthaner, F. J.

    1983-01-01

    InSb has been used as a substrate for molecular beam epitaxy. For good epitaxial growth, a substrate surface which is smooth and clean on an atomic scale is required. Chemical cleaning procedures provide an oxide film to passivate the surface. This film is then desorbed by in situ heating. The material forming the film should, therefore, have a high vapor pressure at some temperature less than the substrate melting temperature. A chloride film appears to satisfy the latter requirement. The present investigation is, therefore, concerned with the formation of a chloride film rather than an oxide film. Carbon contamination has been found to cause problems in chemical cleaning procedures. The level of carbon contamination found in the case of chloride film formation, is therefore compared with the corresponding level observed in procedures using oxide films. It appears that a chloride film grown in connection with a short exposure time to a Cl2 plasma is preferable to other passivation films studied.

  12. Molecular beam epitaxy of SrTiO3 with a growth window

    Science.gov (United States)

    Jalan, Bharat; Moetakef, Pouya; Stemmer, Susanne

    2009-07-01

    Many complex oxides with only nonvolatile constituents do not have a wide growth window in conventional molecular beam epitaxy (MBE) approaches, which makes it difficult to obtain stoichiometric films. Here it is shown that a growth window in which the stoichiometry is self-regulating can be achieved for SrTiO3 films by using a hybrid MBE approach that uses a volatile metal-organic source for Ti, titanium tetra isopropoxide (TTIP). The growth window widens and shifts to higher TTIP/Sr flux ratios with increasing temperature, showing that it is related to the desorption of the volatile TTIP. We demonstrate stoichiometric, highly perfect, insulating SrTiO3 films. The approach can be adapted for the growth of other complex oxides that previously were believed to have no wide MBE growth window.

  13. Deep levels in Ga-doped ZnSe grown by molecular-beam epitaxy

    Science.gov (United States)

    Venkatesan, S.; Pierret, R. F.; Qiu, J.; Kobayashi, M.; Gunshor, R. L.; Kolodziejski, L. A.

    1989-10-01

    Results of a deep-level transient spectroscopy study of Ga-doped ZnSe thin films grown by molecular-beam epitaxy are presented. Two prominent deep levels were observed in all the samples investigated. The concentration of the trap detected at 0.34 eV below the conduction-band edge was essentially independent of the doping concentration and is attributed to native defects arising from Se vacancies in the ZnSe films. The second level with an activation energy of 0.26 eV shows a very strong doping dependence and is tentatively identified as arising from dopant-site (gallium-on-zinc-site) defects complexed with selenium vacancies. Preliminary results also indicate that planar doping of ZnSe significantly reduces the concentration of the Ga-vacancy complex.

  14. Copper-coated laser-fusion targets using molecular-beam levitation

    International Nuclear Information System (INIS)

    A series of diagnostic experiments at the Shiva laser fusion facility required targets of glass microspheres coated with 1.5 to 3.0 μm of copper. Previous batch coating efforts using vibration techniques gave poor results due to microsphere sticking and vacuum welding. Molecular Beam Levitation (MBL) represented a noncontact method to produce a sputtered copper coating on a single glassmicrosphere. The coating specifications that were achieved resulted in a copper layer up to 3 μm thick with the allowance of a maximum variation of 10 nm in surface finish and thickness. These techniques developed with the MBL may be applied to sputter coat many soft metals for fusion target applications

  15. Photoluminescence characteristics of Pb-doped, molecular-beam-epitaxy grown ZnSe crystal layers

    International Nuclear Information System (INIS)

    The characteristic green photoluminescence emission and related phenomena in Pb-doped, molecular-beam-epitaxy (MBE)-grown ZnSe crystal layers were investigated to explore the nature of the center responsible for the green emission. The intensity of the green emission showed a distinct nonlinear dependence on excitation intensity. Pb-diffused polycrystalline ZnSe was similarly examined for comparison. The characteristic green emission has been observed only in MBE-grown ZnSe crystal layers with moderate Pb doping. The results of the investigations on the growth conditions, luminescence, and related properties of the ZnSe crystal layers suggest that the green emission is due to isolated Pb replacing Zn and surrounded with regular ZnSe lattice with a high perfection

  16. Molecular beam mass spectrometric sampling of minor species from coal dust-air flames

    International Nuclear Information System (INIS)

    It has been demonstrated that unaugmented, unconfined, premixed coal dust-air flames can be stabilized on small conical or flat, Meeker type burners. Since these flames are laminar, they can be used to study the kinetics of various processes in coal combustion and related areas such as understanding mechanisms of fireside corrosion and of flame and explosive inhibition. Some of the current work with these flames is directed toward identification and measurement of minor alkali metal and other species responsible for fireside corrosion. In order to make these measurements, molecular beam mass spectrometric sampling techniques have been adpated for use with these heterogeneous flames. In this paper, the equipment and techniques used are reviewed and some preliminary results presented

  17. Surface energies for molecular beam epitaxy growth of HgTe and CdTe

    Science.gov (United States)

    Berding, M. A.; Krishnamurthy, Srinivasan; Sher, A.

    1991-10-01

    We present results for the surface binding energies for HgTe and CdTe that will serve as input for molecular beam epitaxy growth models. We have found that the surface binding energies are surface orientation dependent and are not simply proportional to the number of first-neighbor bonds being made to the underlying layer. Moreover, because of the possibility of charge transfer between cation and anion surface states, one may have large differences between the binding energy for the first and the last atom in a given layer, and these differences will be different for the narrow-gap, less ionic materials than for the wide gap, ionic materials. We also find that the surface states associated with an isolated surface atom or vacancy are extended in materials with small gaps and small effective masses, and thus call into question the modeling of surface binding by simple pair interactions.

  18. Reduction in the crystal defect density of Zn Se layers grown by molecular beam epitaxy

    Energy Technology Data Exchange (ETDEWEB)

    Lopez L, M.; Perez C, A.; Luyo A, J.; Melendez L, M.; Tamura, M. [Departamento de Fisica, Centro de Investigacion y de Estudios Avanzados del instituto politecnico Nacional, A.P. 14-740, 07000 Mexico D.F. (Mexico); Mendez G, V.H.; Vidal, M.A. [Instituto de Investigacion en Comunicacion Optica, Universidad Autonoma de San Luis Potosi, Alvaro Obregon 64, 78000 San Luis Potosi (Mexico)

    2000-07-01

    We present a study of the molecular beam epitaxial (MBE) grown of Zn Se layers on Ga-As and Si substrates. For the growth on GaAs substrates we investigated the effects of introducing buffer layers of Al{sub x}Ga{sub 1-x} As and In{sub x}Ga{sub 1-x} As with x = 0.01. Moreover, an analysis by secondary ion mass spectroscopy revealed that the use of AlGaAs buffer layers effectively suppress the Ga segregation onto the Zn Se layers surface. On the other hand, for the growth of Zn Se on Si substrates, we achieved a significant improvement in the crystal quality of Zn Se by irradiating the Si substrates with plasma of nitrogen prior to the growth. (Author)

  19. Characterisation of multiple carrier transport in indium nitride grown by molecular beam epitaxy

    International Nuclear Information System (INIS)

    Quantitative mobility spectrum analysis (QMSA) was performed on multiple magnetic field Hall effect measurements of indium nitride grown by molecular beam epitaxy. This enables two clearly distinct electron species to be identified, which are attributed to the bulk and a surface accumulation layer. In this material, single magnetic field data corresponds to neither electron species, as both contribute significantly to the total conduction. The bulk electron distribution has an extracted average Hall mobility of 3570 cm2/(Vs) at 300 K with a concentration of 1.5 x 1017 cm-3, while the surface electrons have sheet charge density that is an order of magnitude higher than previously reported surface concentrations. The high quality bulk characteristics revealed emphasise the importance of using multi-carrier analysis when performing transport measurements on InN. (Abstract Copyright [2007], Wiley Periodicals, Inc.)

  20. Reduction in the crystal defect density of Zn Se layers grown by molecular beam epitaxy

    International Nuclear Information System (INIS)

    We present a study of the molecular beam epitaxial (MBE) grown of Zn Se layers on Ga-As and Si substrates. For the growth on GaAs substrates we investigated the effects of introducing buffer layers of AlxGa1-x As and InxGa1-x As with x = 0.01. Moreover, an analysis by secondary ion mass spectroscopy revealed that the use of AlGaAs buffer layers effectively suppress the Ga segregation onto the Zn Se layers surface. On the other hand, for the growth of Zn Se on Si substrates, we achieved a significant improvement in the crystal quality of Zn Se by irradiating the Si substrates with plasma of nitrogen prior to the growth. (Author)

  1. Real-time reflectance-difference spectroscopy of GaAs molecular beam epitaxy homoepitaxial growth

    International Nuclear Information System (INIS)

    We report on real time-resolved Reflectance-difference (RD) spectroscopy of GaAs(001) grown by molecular beam epitaxy, with a time-resolution of 500 ms per spectrum within the 2.3–4.0 eV photon energy range. Through the analysis of transient RD spectra we demonstrated that RD line shapes are comprised of two components with different physical origins and determined their evolution during growth. Such components were ascribed to the subsurface strain induced by surface reconstruction and to surface stoichiometry. Results reported in this paper render RD spectroscopy as a powerful tool for the study of fundamental processes during the epitaxial growth of zincblende semiconductors

  2. Formation of GaP nanostructures on GaAs (100) by droplet molecular beam epitaxy

    Energy Technology Data Exchange (ETDEWEB)

    Prongjit, P.; Pankaow, N.; Thainoi, S.; Panyakeow, S.; Ratanathammaphan, S. [Semiconductor Device Research Laboratory (NanoTec Center of Excellence), Department of Electrical Engineering, Faculty of Engineering, Chulalongkorn University, Bangkok 10330 (Thailand)

    2012-07-15

    In this contribution, we have demonstrated the fabrication of tensile strained GaP nanostructures on GaAs (100) substrates by droplet epitaxy using molecular beam epitaxy. The GaP nanostructures are ring-like structure due to crystallization with low P{sub 2} pressure. The density of GaP ring-like nanostructures varies between 8.92 x 10{sup 8}-2.17 x 10{sup 9} cm{sup -2} and the average of diameter varies between 88.4-133 nm with increasing the Ga amount deposition in the range of 2.4-4.8 ML. The photoluminescence result shows the tensile strain-modified band gap effect of GaP nanostructure in GaAs matrix and it also confirms the high-quality of GaP nanocrystal (copyright 2012 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  3. Molecular-Beam Epitaxially Grown MgB2 Thin Films and Superconducting Tunnel Junctions

    Directory of Open Access Journals (Sweden)

    Jean-Baptiste Laloë

    2011-01-01

    Full Text Available Since the discovery of its superconducting properties in 2001, magnesium diboride has generated terrific scientific and engineering research interest around the world. With a of 39 K and two superconducting gaps, MgB2 has great promise from the fundamental point of view, as well as immediate applications. Several techniques for thin film deposition and heterojunction formation have been established, each with its own advantages and drawbacks. Here, we will present a brief overview of research based on MgB2 thin films grown by molecular beam epitaxy coevaporation of Mg and B. The films are smooth and highly crystalline, and the technique allows for virtually any heterostructure to be formed, including all-MgB2 tunnel junctions. Such devices have been characterized, with both quasiparticle and Josephson tunneling reported. MgB2 remains a material of great potential for a multitude of further characterization and exploration research projects and applications.

  4. High breakdown single-crystal GaN p-n diodes by molecular beam epitaxy

    Energy Technology Data Exchange (ETDEWEB)

    Qi, Meng; Zhao, Yuning; Yan, Xiaodong; Li, Guowang; Verma, Jai; Fay, Patrick [Department of Electrical Engineering, University of Notre Dame, Notre Dame, Indiana 46556 (United States); Nomoto, Kazuki; Zhu, Mingda; Hu, Zongyang; Protasenko, Vladimir; Song, Bo; Xing, Huili Grace; Jena, Debdeep, E-mail: djena@cornell.edu [Department of Electrical Engineering, University of Notre Dame, Notre Dame, Indiana 46556 (United States); Departments of ECE and MSE, Cornell University, Ithaca, New York 14853 (United States); Bader, Samuel [Departments of ECE and MSE, Cornell University, Ithaca, New York 14853 (United States)

    2015-12-07

    Molecular beam epitaxy grown GaN p-n vertical diodes are demonstrated on single-crystal GaN substrates. A low leakage current <3 nA/cm{sup 2} is obtained with reverse bias voltage up to −20 V. With a 400 nm thick n-drift region, an on-resistance of 0.23 mΩ cm{sup 2} is achieved, with a breakdown voltage corresponding to a peak electric field of ∼3.1 MV/cm in GaN. Single-crystal GaN substrates with very low dislocation densities enable the low leakage current and the high breakdown field in the diodes, showing significant potential for MBE growth to attain near-intrinsic performance when the density of dislocations is low.

  5. High-mobility BaSnO{sub 3} grown by oxide molecular beam epitaxy

    Energy Technology Data Exchange (ETDEWEB)

    Raghavan, Santosh; Schumann, Timo; Kim, Honggyu; Zhang, Jack Y.; Cain, Tyler A.; Stemmer, Susanne, E-mail: stemmer@mrl.ucsb.edu [Materials Department, University of California, Santa Barbara, California 93106-5050 (United States)

    2016-01-01

    High-mobility perovskite BaSnO{sub 3} films are of significant interest as new wide bandgap semiconductors for power electronics, transparent conductors, and as high mobility channels for epitaxial integration with functional perovskites. Despite promising results for single crystals, high-mobility BaSnO{sub 3} films have been challenging to grow. Here, we demonstrate a modified oxide molecular beam epitaxy (MBE) approach, which supplies pre-oxidized SnO{sub x}. This technique addresses issues in the MBE of ternary stannates related to volatile SnO formation and enables growth of epitaxial, stoichiometric BaSnO{sub 3}. We demonstrate room temperature electron mobilities of 150 cm{sup 2} V{sup −1} s{sup −1} in films grown on PrScO{sub 3}. The results open up a wide range of opportunities for future electronic devices.

  6. Effects of substrate orientation on the growth of InSb nanostructures by molecular beam epitaxy

    Science.gov (United States)

    Chou, C. Y.; Torfi, A.; Pei, C.; Wang, W. I.

    2016-05-01

    In this work, the effects of substrate orientation on InSb quantum structure growth by molecular beam epitaxy (MBE) are presented. Motivated by the observation that (411) evolves naturally as a stable facet during MBE crystal growth, comparison studies have been carried out to investigate the effects of the crystal orientation of the underlying GaSb substrate on the growth of InSb by MBE. By depositing InSb on a number of different substrate orientations, namely: (100), (311), (411), and (511), a higher nanostructure density was observed on the (411) surface compared with the other orientations. This result suggests that the (411) orientation presents a superior surface in MBE growth to develop a super-flat GaSb buffer surface, naturally favorable for nanostructure growth.

  7. High quality YBCO superconductive thin films fabricated by laser molecular beam epitaxy

    Institute of Scientific and Technical Information of China (English)

    2001-01-01

    High quality YBa2Cu3O6+x (YBCO) superconductive thin films have been fabricated on the SrTiO3(100) substrate using laser molecular beam epitaxy (laser-MBE).The active oxygen source was used,which made the necessary ambient oxygen pressure be 2-3 orders lower than that in pulsed laser deposition (PLD).Tc0 is 85-87 K,and Jc~1.0×106 A/cm2.Atomic force microscopy (AFM) measurements show that no obvious particulates can be observed and the root mean square roughness is 7.8 nm.High stability DC superconducting quantum interference devices (DC-SQUID) was fabricated using this YBCO thin film.

  8. Fabrication of atomically smooth SrRuO3 thin films by laser molecular beam epitaxy

    Institute of Scientific and Technical Information of China (English)

    2008-01-01

    High-quality SrRuO3 (SRO) thin films and SrTiO3/SRO bilayer were grown epitaxially on SrTiO3 (STO)(001) substrates by laser molecular beam epitaxy. The results of in situ observation of reflection high-energy electron diffraction and ex situ X-ray diffraction θ -2θ scan indicate that the SRO thin films have good crystallinity. The measurements of atomic force microscopy and scan tunneling microscopy reveal that the surface of the SRO thin film is atomically smooth. The resistivity of the SRO thin film is 300 μΩ·cm at room temperature. Furthermore, the transmission electron microscopy study shows that the interfaces of STO/SRO and SRO/STO are very clear and no interfacial reaction layer was observed. The experimental results show that the SRO thin film is an excellent electrode material for devices based on perovskite oxide materials.

  9. Investigation of Localized States in GaAsSb Epilayers Grown by Molecular Beam Epitaxy

    Science.gov (United States)

    Gao, Xian; Wei, Zhipeng; Zhao, Fenghuan; Yang, Yahui; Chen, Rui; Fang, Xuan; Tang, Jilong; Fang, Dan; Wang, Dengkui; Li, Ruixue; Ge, Xiaotian; Ma, Xiaohui; Wang, Xiaohua

    2016-01-01

    We report the carrier dynamics in GaAsSb ternary alloy grown by molecular beam epitaxy through comprehensive spectroscopic characterization over a wide temperature range. A detailed analysis of the experimental data reveals a complex carrier relaxation process involving both localized and delocalized states. At low temperature, the localized degree shows linear relationship with the increase of Sb component. The existence of localized states is also confirmed by the temperature dependence of peak position and band width of the emission. At temperature higher than 60 K, emissions related to localized states are quenched while the band to band transition dominates the whole spectrum. This study indicates that the localized states are related to the Sb component in the GaAsSb alloy, while it leads to the poor crystal quality of the material, and the application of GaAsSb alloy would be limited by this deterioration. PMID:27381641

  10. Growth of Biaxially Textured Yttria-Stabilized Zirconia Thin Films on Si(111) Substrate by Ion Beam Assisted Deposition

    Institute of Scientific and Technical Information of China (English)

    MU Hai-Chuan; REN Cong-Xin; JIANG Bing-Yao; DING Xing-Zhao; YU Yue-Hui; WANG Xi; LIU Xiang-Huai; ZHOU Gui-En; JIA Yun-Bo

    2000-01-01

    The (001) oriented yttria-stabilized zirconia (YSZ) films with in-plane biaxial texture have been deposited on Si(lll ) substrates by ion beam assisted deposition at ambient temperature. The effects of ion/atom arrival rate ratio (R=(Ar+ +O2+)/ZrO2) and incident angle of bombarding ion beam on the film texture development were investigated. It was found that the in-plane biaxial texture of the films was improved gradually with increasing ion/atom arrival rate ratio R up to a critical value 1.9, but it was degraded with the further increase of R. The optimal in-plane biaxial texture, whose full width at half maximum of the (lll) φ-scan spectrum is 14°, can be obtained at R=1.9 and incident angle of 55°. For a fixed R, the optimal crystallinity and in-plane biaxial alignment of the YSZ films did not appear at the same incident angle and showed an opposite variation with the change of the incident angle from 51° to 55°. C-axis lignment (perpendicular to substrate surface) does not show any substantial variation with the change of incident angle within the range of 47° - 56°.

  11. Disorder and defect formation mechanisms in molecular-beam-epitaxy grown silicon epilayers

    Energy Technology Data Exchange (ETDEWEB)

    Akbari-Sharbaf, Arash [Department of Physics and Astronomy, University of Western Ontario, London, ON, Canada N6A 3K7 (Canada); Baribeau, Jean-Marc; Wu, Xiaohua; Lockwood, David J. [Institute for Microstructural Sciences, National Research Council, Ottawa, ON, Canada K1A 0R6 (Canada); Fanchini, Giovanni, E-mail: gfanchin@uwo.ca [Department of Physics and Astronomy, University of Western Ontario, London, ON, Canada N6A 3K7 (Canada); Department of Chemistry, University of Western Ontario, London, ON, Canada N6A 5B7 (Canada)

    2013-01-01

    We investigate the role of disorder, stress and crystallite size in determining the density of defects in disordered and partially ordered silicon thin films deposited at low or moderate temperatures by molecular beam epitaxy. We find that the paramagnetic defect density measured by electron spin resonance (ESR) is strongly dependent on the growth temperature of the films, decreasing from ∼ 2 · 10{sup 19} cm{sup −3} at 98 °C to ∼ 1 · 10{sup 18} cm{sup −3} at 572 °C. The physical nature of the defects is strongly dependent on the range of order in the films: ESR spectra consistent with dangling bonds in an amorphous phase are observed at the lowest temperatures, while the ESR signal gradually becomes more anisotropic as medium-range order improves and the stress level (measured both by X-ray diffraction and Raman spectroscopy) is released in more crystalline films. Anisotropic ESR spectra consistent with paramagnetic defects embedded in an epitaxial phase are observed at the highest growth temperature (572 °C). - Highlights: ► Disordered Si epilayers were grown by molecular beam epitaxy. ► Growth has been carried out at temperatures T = 98 °C–514 °C. ► A correlation between defect density and disorder in the films has been found. ► Lack of medium range order and stress cause the formation of defects at low T. ► At high T, defects are associated to grain boundaries and oriented stacking faults.

  12. Interfacial structure of molecular beam epitaxial grown cubic-GaN films on GaAs(001) probed by x-ray gazing-angle specular reflection

    Institute of Scientific and Technical Information of China (English)

    1999-01-01

    We report on a study of interfacial structure of GaN films grown on GaAs(001) substrates by plasma-assisted molecular beam epitaxy using x-ray grazing-angle specular reflection.We show that interfacial layers with electron densities differing from those of GaN and GaAs were formed upon deposition of GaN.It is also found that the interfacial structure of our systems depends strongly on the course of the initial layer deposition.The phase purity of the GaN films was examined by x-ray reciprocal space mapping.A simple kinetic growth model suggested by our results has been presented.

  13. Layer by layer growth of BaTiO 3 thin films with extremely smooth surfaces by laser molecular beam epitaxy

    Science.gov (United States)

    Wang, H. S.; Ma, K.; Cui, D. F.; Peng, Z. Q.; Zhou, Y. L.; Lu, H. B.; Chen, Z. H.; Li, L.; Yang, G. Z.

    1997-05-01

    Using pure ozone-assisted laser molecular beam epitaxy, we have grown c-axis-oriented single crystal BaTiO 3 thin films on SrTiO 3 substrates at temperatures ( Ts) of 400-750°C and under ambient gas pressures of 5 × 10 -5 to 1 × 10 -1 Pa, respectively. Stripy reflection high-energy electron diffraction (RHEED) patterns and regular RHEED intensity oscillations reveal the smooth surface and layer-by-layer epitaxial growth of the films. Scanning electron microscopy analysis shows that the films are free of pinholes, grain boundaries and outgrowths on the surface. In addition, we found a strong dependence of the film lattice constant c on Ts, which might be related to the strain in the film.

  14. Realization of Cu-Doped p-Type ZnO Thin Films by Molecular Beam Epitaxy.

    Science.gov (United States)

    Suja, Mohammad; Bashar, Sunayna B; Morshed, Muhammad M; Liu, Jianlin

    2015-04-29

    Cu-doped p-type ZnO films are grown on c-sapphire substrates by plasma-assisted molecular beam epitaxy. Photoluminescence (PL) experiments reveal a shallow acceptor state at 0.15 eV above the valence band edge. Hall effect results indicate that a growth condition window is found for the formation of p-type ZnO thin films, and the best conductivity is achieved with a high hole concentration of 1.54 × 10(18) cm(-3), a low resistivity of 0.6 Ω cm, and a moderate mobility of 6.65 cm(2) V(-1) s(-1) at room temperature. Metal oxide semiconductor capacitor devices have been fabricated on the Cu-doped ZnO films, and the characteristics of capacitance-voltage measurements demonstrate that the Cu-doped ZnO thin films under proper growth conditions are p-type. Seebeck measurements on these Cu-doped ZnO samples lead to positive Seebeck coefficients and further confirm the p-type conductivity. Other measurements such as X-ray diffraction, X-ray photoelectron, Raman, and absorption spectroscopies are also performed to elucidate the structural and optical characteristics of the Cu-doped p-type ZnO films. The p-type conductivity is explained to originate from Cu substitution of Zn with a valency of +1 state. However, all p-type samples are converted to n-type over time, which is mostly due to the carrier compensation from extrinsic defects of ZnO. PMID:25835032

  15. Laser assisted modification and chemical metallization of electron-beam deposited ceria thin films

    International Nuclear Information System (INIS)

    Excimer laser processing is applied for tailoring the surface morphology and phase composition of CeO2 ceramic thin films. E-beam evaporation technique is used to deposit samples on stainless steel and silicate glass substrates. The films are then irradiated with ArF* excimer laser pulses under different exposure conditions. Scanning electron microscopy, optical spectrophotometry, X-ray diffractometry and EDS microanalysis are used to characterize the non-irradiated and laser-processed films. Upon UV laser exposure there is large increase of the surface roughness that is accompanied by photo-darkening and ceria reduction. It is shown that the laser induced changes in the CeO2 films facilitate the deposition of metal nano-aggregates in a commercial copper electroless plating bath. The significance of laser modification as a novel approach for the production of CeO2 based thin film catalysts is discussed.

  16. Focused-ion-beam-assisted fabrication of polymer rolled-up microtubes

    Science.gov (United States)

    Luchnikov, V.; Stamm, M.; Akhmadaliev, Ch; Bischoff, L.; Schmidt, B.

    2006-08-01

    A focused ion beam (FIB) has been applied to the fabrication of polymer microtubes via the rolling-up technique from poly(4-vinyl pyridine)/polystyrene bilayer films deposited on the top of a sacrificial aluminum layer covering a silicon wafer. The bending forces in the film arise due to different swelling of the bilayer components in acidic water and lead to rolling of the film. The dimensions and position of the rolled-up tubes can be controlled by FIB milling (sputtering) of geometrically well-adjusted openings in the polymer films. This technique can be applied to the structuring of scrolled films formed from different materials without the use of lithographically patterned photoresists. The geometrical patterning of the tube interior can also be done by FIB irradiation.

  17. Repeatable low-temperature negative-differential resistance from Al0.18Ga0.82N/GaN resonant tunneling diodes grown by molecular-beam epitaxy on free-standing GaN substrates

    Science.gov (United States)

    Li, D.; Tang, L.; Edmunds, C.; Shao, J.; Gardner, G.; Manfra, M. J.; Malis, O.

    2012-06-01

    Low-aluminum composition AlGaN/GaN double-barrier resonant tunneling structures were grown by plasma-assisted molecular-beam-epitaxy on free-standing c-plane GaN substrates grown by hydride-vapor phase epitaxy. Clear, exactly reproducible, negative-differential resistance signatures were observed from 4 × 4 μm2 devices at 1.5 V and 1.7 V at 77 K. The relatively small value of the maximum peak-to-valley ratio (1.03) and the area dependence of the electrical characteristics suggest that charge transport is affected by leakage paths through dislocations. However, the reproducibility of the data indicates that electrical traps play no significant role in the charge transport in resonant tunneling diodes grown by molecular-beam-epitaxy under Ga-rich conditions on free-standing GaN substrates.

  18. Integration of carbon nanotubes with semiconductor technology: fabrication of hybrid devices by III–V molecular beam epitaxy

    DEFF Research Database (Denmark)

    Stobbe, Søren; Lindelof, P. E.; Nygård, J.

    2006-01-01

    on incorporation of singlewall nanotubes in III–V semiconductor heterostructures grown by molecular beam epitaxy (MBE). We demonstrate that singlewall carbon nanotubes can be overgrown using MBE; electrical contacts to the nanotubes are obtained by GaMnAs grown at 250 °C. The resulting devices can exhibit field...

  19. Molecular beam epitaxy growth of InSb1-xBix thin films

    DEFF Research Database (Denmark)

    Yuxin Song; Shumin Wang; Saha Roy, Ivy;

    2013-01-01

    Molecular beam epitaxy growth for InSb1-xBix thin films on (100) GaAs substrates is reported. Successful Bi incorporation for 2% is achieved, and up to 70% of the incorporated Bi atoms are at substitutional sites. The effects of growth parameters on Bi incorporation and surface morphology are stu...

  20. Study on Size-Dependent Young’s Modulus of a Silicon Nano beam by Molecular Dynamics Simulation

    International Nuclear Information System (INIS)

    Young’s modulus of a silicon nano beam with a rectangular cross-section is studied by molecular dynamics method. Dynamic simulations are performed for doubly clamped silicon nano beams with lengths ranging from 4.888 to 12.491 nm and cross-sections ranging from 1.22 nm ×1.22 nm to 3.39 nm × 3.39 nm. The results show that Young’s moduli of such small silicon nano beams are much higher than the value of Young’s modulus for bulk silicon. Moreover, the resonant frequency and Young’s modulus of the Si nano beam are strongly dependent not only on the size of the nano beam but also on surface effects. Young’s modulus increases significantly with the decreasing of the thickness of the silicon nano beam. This result qualitatively agrees with one of the conclusions based on a semi continuum model, in which the surface relaxation and the surface tension were taken into consideration. The impacts of the surface reconstruction with (2 ×1) dimmers on the resonant frequency and Young’s modulus are studied in this paper too. It is shown that the surface reconstruction makes the silicon nano beam stiffer than the one without the surface reconstruction, resulting in a higher resonant frequency and a larger Young’s modulus

  1. Gas-assisted electron-beam-induced nanopatterning of high-quality titanium oxide

    Science.gov (United States)

    Riazanova, A. V.; Costanzi, B. N.; Aristov, A. I.; Rikers, Y. G. M.; Mulders, J. J. L.; Kabashin, A. V.; Dahlberg, E. Dan; Belova, L. M.

    2016-03-01

    Electron-beam-induced deposition of titanium oxide nanopatterns is described. The precursor is titanium tetra-isopropoxide, delivered to the deposition point through a needle and mixed with oxygen at the same point via a flow through a separate needle. The depositions are free of residual carbon and have an EDX determined stoichiometry of TiO2.2. High resolution transmission electron microscopy and Raman spectroscopy studies reveal an amorphous structure of the fabricated titanium oxide. Ellipsometric characterization of the deposited material reveals a refractive index of 2.2-2.4 RIU in the spectral range of 500-1700 nm and a very low extinction coefficient (lower than 10-6 in the range of 400-1700 nm), which is consistent with high quality titanium oxide. The electrical resistivity of the titanium oxide patterned with this new process is in the range of 10-40 GΩ cm and the measured breakdown field is in the range of 10-70 V μm-1. The fabricated nanopatterns are important for a variety of applications, including field-effect transistors, memory devices, MEMS, waveguide structures, bio- and chemical sensors.

  2. Supersonic molecular beam electric resonance spectroscopy and van der Waals molecules

    International Nuclear Information System (INIS)

    A supersonic molecular beam electric resonance (MBER) spectrometer was built to study the radiofrequency spectra of weakly bound gas phase van der Waals molecules. The instrument and its operating characteristics are described in detail. Sample mass spectra of Ar-ClF gas mixtures are also presented as an illustration of the synthesis of van der Waals molecules. The Stark focusing process for linear polar molecules is discussed and computer-simulated using both second order perturbation and variational methods. Experimental refocusing spectra of OCS and ClF are studied and compared with these trajectory calculations. Though quantitative fitting is poor, there are strong qualitative indicators that the central part of a supersonic beam consists of molecules with a significantly greater population in the lowest energy rotational states than generally assumed. Flop in as opposed to flop out resonance signals for OCS are also numerically predicted and observed. The theoretical properties of the MBER spectrum for linear molecules are elaborated upon with special emphasis on line shape considerations. MBER spectra of OCS and ClF under a variety of conditions are presented and discussed in context to these predictions. There is some uncertainty expressed both in our own modeling and in the manner complex MBER spectra have been analyzed in the past. Finally, an electrostatic potential model is used to quantitatively describe the class of van der Waals molecules Ar-MX, where MX is an alkali halide. Energetics and equilibrium geometries are calculated. The validity of using an electrostatic model to predict van der Waals bond properties is critically discussed

  3. An organelle-exclusion envelope assists mitosis and underlies distinct molecular crowding in the spindle region.

    Science.gov (United States)

    Schweizer, Nina; Pawar, Nisha; Weiss, Matthias; Maiato, Helder

    2015-08-31

    The mitotic spindle is a microtubular assembly required for chromosome segregation during mitosis. Additionally, a spindle matrix has long been proposed to assist this process, but its nature has remained elusive. By combining live-cell imaging with laser microsurgery, fluorescence recovery after photobleaching, and fluorescence correlation spectroscopy in Drosophila melanogaster S2 cells, we uncovered a microtubule-independent mechanism that underlies the accumulation of molecules in the spindle region. This mechanism relies on a membranous system surrounding the mitotic spindle that defines an organelle-exclusion zone that is conserved in human cells. Supported by mathematical modeling, we demonstrate that organelle exclusion by a membrane system causes spatio-temporal differences in molecular crowding states that are sufficient to drive accumulation of mitotic regulators, such as Mad2 and Megator/Tpr, as well as soluble tubulin, in the spindle region. This membranous "spindle envelope" confined spindle assembly, and its mechanical disruption compromised faithful chromosome segregation. Thus, cytoplasmic compartmentalization persists during early mitosis to promote spindle assembly and function.

  4. Molecular changes after left ventricular assist device support for heart failure.

    Science.gov (United States)

    Birks, Emma J

    2013-08-30

    Heart failure is associated with remodeling that consists of adverse cellular, structural, and functional changes in the myocardium. Until recently, this was thought to be unidirectional, progressive, and irreversible. However, irreversibility has been shown to be incorrect because complete or partial reversal can occur that can be marked after myocardial unloading with a left ventricular assist device (LVAD). Patients with chronic advanced heart failure can show near-normalization of nearly all structural abnormalities of the myocardium or reverse remodeling after LVAD support. However, reverse remodeling does not always equate with clinical recovery. The molecular changes occurring after LVAD support are reviewed, both those demonstrated with LVAD unloading alone in patients bridged to transplantation and those occurring in the myocardium of patients who have recovered enough myocardial function to have the device removed. Reverse remodeling may be attributable to a reversal of the pathological mechanisms that occur in remodeling or the generation of new pathways. A reduction in cell size occurs after LVAD unloading, which does not necessarily correlate with improved cardiac function. However, some of the changes in both the cardiac myocyte and the matrix after LVAD support are specific to myocardial recovery. In the myocyte, increases in the cytoskeletal proteins and improvements in the Ca²⁺ handling pathway seem to be specifically associated with myocardial recovery. Changes in the matrix are complex, but excessive scarring appears to limit the ability for recovery, and the degree of fibrosis in the myocardium at the time of implantation may predict the ability to recover.

  5. Molecularly imprinted polymers with assistant recognition polymer chains for bovine serum albumin

    Institute of Scientific and Technical Information of China (English)

    2010-01-01

    A new protein molecularly imprinted polymer (MIP) was prepared with grafting polyvinyl alcohol as assistant recognition polymer chains (ARPCs). The ARPCs and acrylamide monomers were interpenetrated and then polymerized on the surface of macroporous acrylate adsorbent spheres. The template BSA was removed by treatment with 2.00 mol L-1 potassium chloride (KCl) solution and the adsorbed proteins were detected with sodium dodecyl sulfate-polyacrylamide gel electrophoresis (SDS-PAGE). 0.150, 0.500, and 2.00 mol L-1 KCl solutions were used as eluent to wash the adsorbed proteins. The SDS-PAGE results show that proteins washed out with 2.00 mol L-1KCl solution were from nonspecific adsorption of macroporous acrylate adsorbent spheres, and proteins washed out with 0.500 mol L-1KC1 solution were specific proteins imprinted by MIP resins. MIP resins with ARPCs had better recognition to the target proteins than that without ARPCs. The adsorption capacity of MIP resins immobilized ARPCs to the template BSA was about 80-100 μg g-1 when it was used for the adsorption of proteins mixture, and the specific adsorption of the target protein was obviously increased.

  6. Copper ion implanted aluminum nitride dilute magnetic semiconductors (DMS) prepared by molecular beam epitaxy

    Energy Technology Data Exchange (ETDEWEB)

    Shah, A., E-mail: attaullah77@yahoo.com [National Institute of Lasers and Optronics (NILOP), PO Nilore, Islamabad (Pakistan); DMME, Pakistan Institute of Engineering and Applied Science (PIEAS), PO Nilore, Islamabad (Pakistan); Ahmad, Jamil [DMME, Pakistan Institute of Engineering and Applied Science (PIEAS), PO Nilore, Islamabad (Pakistan); Ahmad, Ishaq [Experimental Physics Lab, National Center for Physics (NCP), Islamabad (Pakistan); Mehmood, Mazhar [DMME, Pakistan Institute of Engineering and Applied Science (PIEAS), PO Nilore, Islamabad (Pakistan); Mahmood, Arshad [National Institute of Lasers and Optronics (NILOP), PO Nilore, Islamabad (Pakistan); Rasheed, Muhammad Asim [DMME, Pakistan Institute of Engineering and Applied Science (PIEAS), PO Nilore, Islamabad (Pakistan)

    2014-10-30

    Highlights: • AlN:Cu dilute magnetic semiconductors were successfully prepared by molecular beam epitaxy followed by Cu{sup +} implantation. • Room temperature ferromagnetism was observed after annealing the samples at appropriate temperature. • XRD and Raman spectrometry excluded the possibility of formation of any secondary phases. • By doping intrinsically nonmagnetic dopants (Cu), it has been proved experimentally that their precipitates do not contribute to ferromagnetism. • The reason for ferromagnetism in Cu-doped AlN as observed was explained on the basis of p–d hybridization mechanism (Wu et al.). - Abstract: Diluted magnetic semiconductor (DMS) AlN:Cu films were fabricated by implanting Cu{sup +} ions into AlN thin films at various ion fluxes. AlN films were deposited on c-plane sapphire by molecular beam epitaxy followed by Cu{sup +} ion implantation. The structural and magnetic characterization of the samples was performed through Rutherford backscattering and channeling spectrometry (RBS/C), X-ray diffraction (XRD), Raman spectroscopy, vibrating sample magnetometer (VSM) and SQUID. Incorporation of copper into the AlN lattice was confirmed by RBS, while XRD revealed that no new phase was formed as a result of ion implantation. RBS also indicated formation of defects as a result of implantation process and the depth and degree of damage increased with an increase in ion fluence. Raman spectra showed only E{sub 2} (high) and A{sub 1} (LO) modes of wurtzite AlN crystal structure and confirmed that no secondary phases were formed. It was found that both Raman modes shift with Cu{sup +} fluences, indicating that Cu ion may go to interstitial or substitutional sites resulting in distortion or damage of lattice. Although as implanted samples showed no magnetization, annealing of the samples resulted in appearance of room temperature ferromagnetism. The saturation magnetization increased with both the annealing temperature as well as with ion

  7. Production and detection of neutral molecular beams : from single amino acids to biomolecular complexes

    International Nuclear Information System (INIS)

    This thesis presents a laser desorption source for neutral organic molecules and clusters as well as the first exploration of a superconducting single photon detector for the detection of massive neutral particles. Whereas the source can produce beams of biomolecules for various gas-phase applications, the detector can be used to overcome the current post- ionization detection mass limit of neutral molecules. The aim of our work is to produce and detect neutral molecular gas-phase beams, ranging from small amino acids overlarge polypeptides to massive complexes. The purpose of creating these beams is to use them for quantum optics experiments, like near field matter wave interference and its applications in metrology. Standard effusive sources usually lack the ability to cool the evaporated organic molecules fast enough to prevent fragmentation. In contrast to that, the presented laser desorption source cools the initially evaporated molecules by embedding them into a supersonic seed gas beam. The mixing of the seed gas and the desorbed molecules is implemented both in free expansion as well as inside a closed mixing channel. The desorbed neutral molecules are detected by photo-ionization using UV (266 nm) and FUV (157 nm) light followed by time-of-flight mass spectrometry. For the amino acid tryptophan (204amu) and for the antibiotic polypeptide gramicidin (1884amu) the ion yields for both photo-ionization wavelengths are examined and the ionization cross sections for the UV wavelength are measured. In case of tryptophan the ionization yield is comparable for both wavelengths, whereas gramicidin is detected fifteen times more efficiently under VUV ionization than for UV ionization at equal intensity. Desorption of heavier molecules than gramicidin never resulted in a detectable ion yield, which confirms the known inefficiency for the post-ionization of isolated large organic molecules [1-3]. The desorption source is also used for the formation of large neutral

  8. Cavity-induced phase stability to decelerate a fast molecular beam via feedback-controlled time-varying optical pumps

    CERN Document Server

    Lan, Zhihao

    2014-01-01

    We have identified a novel phase stability mechanism from the intracavity field-induced self-organization of a fast-moving molecular beam into travelling molecular packets in the bad cavity regime, which is then used to decelerate the molecular packets by feedback-controlled time-varying laser pumps to the cavity. We first applied the linear stability analysis to derive an expression for this self-organization in the adiabatic limit and show that the self-organization of the beam leads to the formation of travelling molecular packets, which in turn function as a dynamic Bragg grating, thus modulating periodically the intracavity field by superradiant scattering of the pump photons. The modulation encodes the position information of the molecular packets into the output of the intracavity field instantaneously. We then applied time-varying laser pumps that are automatically switched by the output of the intracavity field to slow down the molecular packets via a feedback mechanism and found that most of the mol...

  9. Effect of AlN buffer layer properties on the morphology and polarity of GaN nanowires grown by molecular beam epitaxy

    International Nuclear Information System (INIS)

    Low-temperature AlN buffer layers grown via plasma-assisted molecular beam epitaxy on Si (111) were found to significantly affect the subsequent growth morphology of GaN nanowires. The AlN buffer layers exhibited nanowire-like columnar protrusions, with their size, shape, and tilt determined by the AlN V/III flux ratio. GaN nanowires were frequently observed to adopt the structural characteristics of the underlying AlN columns, including the size and the degree of tilt. Piezoresponse force microscopy and polarity-sensitive etching indicate that the AlN films and the protruding columns have a mixed crystallographic polarity. Convergent beam electron diffraction indicates that GaN nanowires are Ga-polar, suggesting that Al-polar columns are nanowire nucleation sites for Ga-polar nanowires. GaN nanowires of low density could be grown on AlN buffers that were predominantly N-polar with isolated Al-polar columns, indicating a high growth rate for Ga-polar nanowires and suppressed growth of N-polar nanowires under typical growth conditions. AlN buffer layers grown under slightly N-rich conditions (V/III flux ratio = 1.0 to 1.3) were found to provide a favorable growth surface for low-density, coalescence-free nanowires.

  10. Structural anisotropic properties of a-plane GaN epilayers grown on r-plane sapphire by molecular beam epitaxy

    Energy Technology Data Exchange (ETDEWEB)

    Lotsari, A.; Kehagias, Th.; Katsikini, M.; Arvanitidis, J.; Ves, S.; Komninou, Ph.; Dimitrakopulos, G. P., E-mail: gdim@auth.gr [Physics Department, Aristotle University of Thessaloniki, 54124 Thessaloniki (Greece); Tsiakatouras, G.; Tsagaraki, K.; Georgakilas, A. [Department of Physics, Microelectronics Research Group, University of Crete, P.O. Box 2208, GR 71003, Greece and IESL, FORTH, P.O. Box 1385, GR71110 Heraklion (Greece); Christofilos, D. [Physics Division, School of Technology, Aristotle University of Thessaloniki, GR54124 Thessaloniki (Greece)

    2014-06-07

    Heteroepitaxial non-polar III-Nitride layers may exhibit extensive anisotropy in the surface morphology and the epilayer microstructure along distinct in-plane directions. The structural anisotropy, evidenced by the “M”-shape dependence of the (112{sup ¯}0) x-ray rocking curve widths on the beam azimuth angle, was studied by combining transmission electron microscopy observations, Raman spectroscopy, high resolution x-ray diffraction, and atomic force microscopy in a-plane GaN epilayers grown on r-plane sapphire substrates by plasma-assisted molecular beam epitaxy (PAMBE). The structural anisotropic behavior was attributed quantitatively to the high dislocation densities, particularly the Frank-Shockley partial dislocations that delimit the I{sub 1} intrinsic basal stacking faults, and to the concomitant plastic strain relaxation. On the other hand, isotropic samples exhibited lower dislocation densities and a biaxial residual stress state. For PAMBE growth, the anisotropy was correlated to N-rich (or Ga-poor) conditions on the surface during growth, that result in formation of asymmetric a-plane GaN grains elongated along the c-axis. Such conditions enhance the anisotropy of gallium diffusion on the surface and reduce the GaN nucleation rate.

  11. Gaussian Schell Source as Model for Slit-Collimated Atomic and Molecular Beams

    CERN Document Server

    McMorran, Ben

    2008-01-01

    We show how to make a Gaussian Schell-model (GSM) beam. Then we compare the intensity profile, the transverse coherence width and the divergence angle of a GSM beam with those same properties of a beam that is collimated with two hard-edged slits. This work offers an intuitive way to understand various interferometer designs, and we compare our results with data.

  12. Approaching Defect-free Amorphous Silicon Nitride by Plasma-assisted Atomic Beam Deposition for High Performance Gate Dielectric.

    Science.gov (United States)

    Tsai, Shu-Ju; Wang, Chiang-Lun; Lee, Hung-Chun; Lin, Chun-Yeh; Chen, Jhih-Wei; Shiu, Hong-Wei; Chang, Lo-Yueh; Hsueh, Han-Ting; Chen, Hung-Ying; Tsai, Jyun-Yu; Lu, Ying-Hsin; Chang, Ting-Chang; Tu, Li-Wei; Teng, Hsisheng; Chen, Yi-Chun; Chen, Chia-Hao; Wu, Chung-Lin

    2016-01-01

    In the past few decades, gate insulators with a high dielectric constant (high-k dielectric) enabling a physically thick but dielectrically thin insulating layer, have been used to replace traditional SiOx insulator and to ensure continuous downscaling of Si-based transistor technology. However, due to the non-silicon derivative natures of the high-k metal oxides, transport properties in these dielectrics are still limited by various structural defects on the hetero-interfaces and inside the dielectrics. Here, we show that another insulating silicon compound, amorphous silicon nitride (a-Si3N4), is a promising candidate of effective electrical insulator for use as a high-k dielectric. We have examined a-Si3N4 deposited using the plasma-assisted atomic beam deposition (PA-ABD) technique in an ultra-high vacuum (UHV) environment and demonstrated the absence of defect-related luminescence; it was also found that the electronic structure across the a-Si3N4/Si heterojunction approaches the intrinsic limit, which exhibits large band gap energy and valence band offset. We demonstrate that charge transport properties in the metal/a-Si3N4/Si (MNS) structures approach defect-free limits with a large breakdown field and a low leakage current. Using PA-ABD, our results suggest a general strategy to markedly improve the performance of gate dielectric using a nearly defect-free insulator. PMID:27325155

  13. Integration of biaxally aligned conducting oxides with silicon using ion-beam assisted deposited MgO templates

    Energy Technology Data Exchange (ETDEWEB)

    Park, B. H. (Bae Ho); Groves, J. R. (James R.); DePaula, R. F. (Raymond Felix); Jia, Quanxi; Arendt, P. N. (Paul N.); Emmert, L. A. (Luke A.)

    2001-01-01

    Two conducting oxides, La{sub 0.5}Sr{sub 0.5}CoO{sub 3}(LSCO) and SrRuO{sub 3}, were deposited by pulsed laser ablation onto silicon substrates coated with biaxially textured MgO on an amorphous silicon nitride isolation layer. Comparison is made between templates using just 10 nm of ion-beam assisted deposited (IBAD) MgO and substrates with an additional 100 nm of homoepitaxial MgO. Both of these conducting oxide layers exhibited in-plane and out-of-plane texture, on the order of that obtained by the underlying MgO. The SrRuO{sub 3} was c-axis oriented on both substrates, but exhibited a slightly sharper out-of-plane texture when the homoepitaxial MgO layer was included. On the other hand, the LSCO showed only (100) orientation when deposited directly on the IBAD-MgO templates, whereas a significant (110) peak was observed for films on the homoepitaxial MgO. A simple calculation of the distribution of grain boundary angles, assuming a normal distribution of grains, is also presented.

  14. Effect of substrate temperature on the texture of MgO films grown by ion beam assisted deposition

    International Nuclear Information System (INIS)

    In this paper, the role of substrate temperature in the crystalline texture of MgO films grown by ion beam assisted deposition (IBAD) is investigated. This study reveals that the best in-plane alignment for MgO films grown on Y2O3/Si is obtained at ∼25 deg. C. At this temperature, MgO films with an in-plane orientation distribution as low as 3.70 full width at half maximum (FWHM) have been attained. MgO films deposited at temperatures higher than 100 deg. C have broad in-plane alignment. Although the deposition at the lowest temperature (-150 deg. C) did not improve the in-plane texture, the acceptable deviation from the optimum ion to molecule ratio for achieving biaxially textured films was the largest. As a trend, the acceptable ion to molecule deviation decreases with increasing substrate temperature. This study is especially important for continuous IBAD MgO depositions where less restrictive conditions are desired

  15. Effect of substrate temperature on the texture of MgO films grown by ion beam assisted deposition

    Energy Technology Data Exchange (ETDEWEB)

    Stan, Liliana; Arendt, Paul N; DePaula, Raymond F; Usov, Igor O; Groves, James R [Superconductivity Technology Center, Los Alamos National Laboratory, Los Alamos, NM 87545 (United States)

    2006-04-15

    In this paper, the role of substrate temperature in the crystalline texture of MgO films grown by ion beam assisted deposition (IBAD) is investigated. This study reveals that the best in-plane alignment for MgO films grown on Y{sub 2}O{sub 3}/Si is obtained at {approx}25 deg. C. At this temperature, MgO films with an in-plane orientation distribution as low as 3.7{sup 0} full width at half maximum (FWHM) have been attained. MgO films deposited at temperatures higher than 100 deg. C have broad in-plane alignment. Although the deposition at the lowest temperature (-150 deg. C) did not improve the in-plane texture, the acceptable deviation from the optimum ion to molecule ratio for achieving biaxially textured films was the largest. As a trend, the acceptable ion to molecule deviation decreases with increasing substrate temperature. This study is especially important for continuous IBAD MgO depositions where less restrictive conditions are desired.

  16. Approaching Defect-free Amorphous Silicon Nitride by Plasma-assisted Atomic Beam Deposition for High Performance Gate Dielectric

    Science.gov (United States)

    Tsai, Shu-Ju; Wang, Chiang-Lun; Lee, Hung-Chun; Lin, Chun-Yeh; Chen, Jhih-Wei; Shiu, Hong-Wei; Chang, Lo-Yueh; Hsueh, Han-Ting; Chen, Hung-Ying; Tsai, Jyun-Yu; Lu, Ying-Hsin; Chang, Ting-Chang; Tu, Li-Wei; Teng, Hsisheng; Chen, Yi-Chun; Chen, Chia-Hao; Wu, Chung-Lin

    2016-06-01

    In the past few decades, gate insulators with a high dielectric constant (high-k dielectric) enabling a physically thick but dielectrically thin insulating layer, have been used to replace traditional SiOx insulator and to ensure continuous downscaling of Si-based transistor technology. However, due to the non-silicon derivative natures of the high-k metal oxides, transport properties in these dielectrics are still limited by various structural defects on the hetero-interfaces and inside the dielectrics. Here, we show that another insulating silicon compound, amorphous silicon nitride (a-Si3N4), is a promising candidate of effective electrical insulator for use as a high-k dielectric. We have examined a-Si3N4 deposited using the plasma-assisted atomic beam deposition (PA-ABD) technique in an ultra-high vacuum (UHV) environment and demonstrated the absence of defect-related luminescence; it was also found that the electronic structure across the a-Si3N4/Si heterojunction approaches the intrinsic limit, which exhibits large band gap energy and valence band offset. We demonstrate that charge transport properties in the metal/a-Si3N4/Si (MNS) structures approach defect-free limits with a large breakdown field and a low leakage current. Using PA-ABD, our results suggest a general strategy to markedly improve the performance of gate dielectric using a nearly defect-free insulator.

  17. Polarized infrared reflectance study of free standing cubic GaN grown by molecular beam epitaxy

    Energy Technology Data Exchange (ETDEWEB)

    Lee, S.C., E-mail: saicheonglee86@yahoo.com [Nano-Optoelectronics Research Laboratory, School of Physics, Universiti Sains Malaysia, 11800 Penang (Malaysia); Department of Physics, Faculty of Science, University of Malaya, 50603 Kuala Lumpur (Malaysia); Ng, S.S.; Hassan, H. Abu; Hassan, Z.; Zainal, N. [Nano-Optoelectronics Research Laboratory, School of Physics, Universiti Sains Malaysia, 11800 Penang (Malaysia); Novikov, S.V.; Foxon, C.T.; Kent, A.J. [School of Physics and Astronomy, University of Nottingham, Nottingham NG7 2RD (United Kingdom)

    2014-07-01

    Optical properties of free standing cubic gallium nitride grown by molecular beam epitaxy system are investigated by a polarized infrared (IR) reflectance technique. A strong reststrahlen band, which reveals the bulk-like optical phonon frequencies, is observed. Meanwhile, continuous oscillation fringes, which indicate the sample consists of two homogeneous layers with different dielectric constants, are observed in the non-reststrahlen region. By obtaining the first derivative of polarized IR reflectance spectra measured at higher angles of incidence, extra phonon resonances are identified at the edges of the reststrahlen band. The observations are verified with the theoretical results simulated based on a multi-oscillator model. - Highlights: • First time experimental studies of IR optical phonons in bulk like, cubic GaN layer. • Detection of extra phonon modes of cubic GaN by polarized IR reflectance technique. • Revelation of IR multiphonon modes of cubic GaN by first derivative numerical method. • Observation of multiphonon modes requires very high angle of incidence. • Resonance splitting effect induced by third phonon mode is a qualitative indicator.

  18. Growth and properties of GdTiO3 films prepared by hybrid molecular beam epitaxy

    Science.gov (United States)

    Moetakef, Pouya; Ouellette, Daniel G.; Zhang, Jack Y.; Cain, Tyler A.; Allen, S. James; Stemmer, Susanne

    2012-09-01

    The paper reports on the thin film growth of a protoptype Mott insulator, ferrimagnetic GdTiO3, using shuttered molecular beam epitaxy. Substrates were (001) (LaAlO3)0.3(Sr2AlTaO6)0.7 (LSAT), with and without epitaxial SrTiO3 buffer layers, respectively. It was found that on bare LSAT, the starting monolayer was crucial for stabilizing the GdTiO3 perovskite phase. The quality of the films was evaluated using structural, electric, optical and magnetic characterization. Structural characterization showed that the GdTiO3 layers were free of pyrochlore impurity phases and that the lattice parameter was close to what was expected for coherently strained, stoichiometric GdTiO3. The room temperature film resistivity was 7 Ωcm and increased with decreasing temperature, consistent with Mott insulating characteristics. The Curie temperature was 30 K and a small coercivity was observed at 2 K, in good agreement with bulk GdTiO3 properties reported in the literature.

  19. Photoluminescence of localized excitons in ZnCdO thin films grown by molecular beam epitaxy

    Science.gov (United States)

    Wu, T. Y.; Huang, Y. S.; Hu, S. Y.; Lee, Y. C.; Tiong, K. K.; Chang, C. C.; Shen, J. L.; Chou, W. C.

    2016-07-01

    We have investigated the luminescence characteristics of Zn1-xCdxO thin films with different Cd contents grown by molecular beam epitaxy system. The temperature-dependent photoluminescence (PL) and excitation power-dependent PL spectra were measured to clarify the luminescence mechanisms of the Zn1-xCdxO thin films. The peak energy of the Zn1-xCdxO thin films with increasing the Cd concentration is observed as redshift and can be fitted by the quadratic function of alloy content. The broadened full-width at half-maximum (FWHM) estimated from the 15 K PL spectra as a function of Cd content shows a larger deviation between the experimental values and theoretical curve, which indicates that experimental FWHM values are affected not only by alloy compositional disorder but also by localized excitons occupying states in the tail of the density of states. The Urbach energy determined from an analysis of the lineshape of the low-energy side of the PL spectrum and the degree of localization effect estimated from the temperature-induced S-shaped PL peak position described an increasing mean exciton-localization effects in ZnCdO films with increasing the Cd content. In addition, the PL intensity and peak position as a function of excitation power are carried out to clarify the types of radiative recombination and the effects of localized exciton in the ZnCdO films with different Cd contents.

  20. Radical-source molecular beam epitaxy of ZnO-based heterostructures

    Energy Technology Data Exchange (ETDEWEB)

    Sadofiev, Sergey

    2009-10-27

    This work focuses on the development of the novel growth approaches for the fabrication of Group II-oxide materials in the form of epitaxial films and heterostructures. It is shown that molecular-beam epitaxial growth far from thermal equilibrium allows one to overcome the standard solubility limit and to alloy ZnO with MgO or CdO in strict wurtzite phase up to mole fractions of several 10 %. In this way, a band-gap range from 2.2 to 4.4 eV can be covered. A clear layer-by-layer growth mode controlled by oscillations in reflection high-energy electron diffraction makes it possible to fabricate atomically smooth heterointerfaces and well-defined quantum well structures exhibiting prominent band-gap related light emission in the whole composition range. On appropriately designed structures, laser action from the ultraviolet down to green wavelengths and up to room temperature is achieved. The properties and potential of the ''state-of-the-art'' materials are discussed in relation to the advantages for their applications in various optoelectronic devices. (orig.)

  1. Impact of extended defects on recombination in CdTe heterostructures grown by molecular beam epitaxy

    Science.gov (United States)

    Zaunbrecher, Katherine N.; Kuciauskas, Darius; Swartz, Craig H.; Dippo, Pat; Edirisooriya, Madhavie; Ogedengbe, Olanrewaju S.; Sohal, Sandeep; Hancock, Bobby L.; LeBlanc, Elizabeth G.; Jayathilaka, Pathiraja A. R. D.; Barnes, Teresa M.; Myers, Thomas H.

    2016-08-01

    Heterostructures with CdTe and CdTe1-xSex (x ˜ 0.01) absorbers between two wider-band-gap Cd1-xMgxTe barriers (x ˜ 0.25-0.3) were grown by molecular beam epitaxy to study carrier generation and recombination in bulk materials with passivated interfaces. Using a combination of confocal photoluminescence (PL), time-resolved PL, and low-temperature PL emission spectroscopy, two extended defect types were identified and the impact of these defects on charge-carrier recombination was analyzed. The dominant defects identified by confocal PL were dislocations in samples grown on (211)B CdTe substrates and crystallographic twinning-related defects in samples on (100)-oriented InSb substrates. Low-temperature PL shows that twin-related defects have a zero-phonon energy of 1.460 eV and a Huang-Rhys factor of 1.50, while dislocation-dominated samples have a 1.473-eV zero-phonon energy and a Huang-Rhys factor of 1.22. The charge carrier diffusion length near both types of defects is ˜6 μm, suggesting that recombination is limited by diffusion dynamics. For heterostructures with a low concentration of extended defects, the bulk lifetime was determined to be 2.2 μs with an interface recombination velocity of 160 cm/s and an estimated radiative lifetime of 91 μs.

  2. Thin film growth of CaFe2As2 by molecular beam epitaxy

    Science.gov (United States)

    Hatano, T.; Kawaguchi, T.; Fujimoto, R.; Nakamura, I.; Mori, Y.; Harada, S.; Ujihara, T.; Ikuta, H.

    2016-01-01

    Film growth of CaFe2As2 was realized by molecular beam epitaxy on six different substrates that have a wide variation in the lattice mismatch to the target compound. By carefully adjusting the Ca-to-Fe flux ratio, we obtained single-phase thin films for most of the substrates. Interestingly, an expansion of the CaFe2As2 lattice to the out-of-plane direction was observed for all films, even when an opposite strain was expected. A detailed microstructure observation of the thin film grown on MgO by transmission electron microscope revealed that it consists of cube-on-cube and 45°-rotated domains. The latter domains were compressively strained in plane, which caused a stretching along the c-axis direction. Because the domains were well connected across the boundary with no appreciable discontinuity, we think that the out-of-plane expansion in the 45°-rotated domains exerted a tensile stress on the other domains, resulting in the unexpectedly large c-axis lattice parameter, despite the apparently opposite lattice mismatch.

  3. Red vertical-cavity surface-emitting lasers grown by solid-source molecular beam epitaxy

    Science.gov (United States)

    Saarinen, M.; Xiang, N.; Vilokkinen, V.; Melanen, P.; Orsila, S.; Uusimaa, P.; Savolainen, P.; Toivonen, M.; Pessa, M.

    2001-07-01

    Plastic optical fibres, which have a local attenuation minimum at 650 nm, have attracted much interest for low-cost short-haul communication systems. Red vertical-cavity surface-emitting lasers (VCSELs) provide a potential solution as light sources for these systems. The operation of vertical cavity emitters is based on a Fabry-Perot microcavity, which is formed by placing an optically active region inside of two parallel mirrors. These mirrors are usually formed epitaxially. So far, metal organic chemical vapour deposition (MOCVD) has been the major technology used for growing visible VCSELs. Recently, an alternative growth method—solid-source molecular beam epitaxy (SSMBE)—has been introduced to be a viable solution to the fabrication of these structures. The authors present the first MBE-grown visible AlGaInP vertical-cavity surface-emitting lasers. A laser with a 10 μm emitting window has an external quantum efficiency of 6.65% under continuous wave operation and it is still lasing at 45°C. Furthermore, a threshold current less than 1.0 mA is obtained for a device, which has an 8 μm emitting window.

  4. Carbon doping in molecular beam epitaxy of GaAs from a heated graphite filament

    Science.gov (United States)

    Malik, R. J.; Nottenberg, R. N.; Schubert, E. F.; Walker, J. F.; Ryan, R. W.

    1988-01-01

    Carbon doping of GaAs grown by molecular beam epitaxy has been obtained for the first time by use of a heated graphite filament. Controlled carbon acceptor concentrations over the range of 10 to the 17th-10 to the 20th/cu cm were achieved by resistively heating a graphite filament with a direct current power supply. Capacitance-voltage, p/n junction and secondary-ion mass spectrometry measurements indicate that there is negligible diffusion of carbon during growth and with postgrowth rapid thermal annealing. Carbon was used for p-type doping in the base of Npn AlGaAs/GaAs heterojunction bipolar transistors. Current gains greater than 100 and near-ideal emitter heterojunctions were obtained in transistors with a carbon base doping of 1 x 10 to the 19th/cu cm. These preliminary results indicate that carbon doping from a solid graphite source may be an attractive substitute for beryllium, which is known to have a relatively high diffusion coefficient in GaAs.

  5. Current transport in ZnO/Si heterostructure grown by laser molecular beam epitaxy

    Institute of Scientific and Technical Information of China (English)

    Teng Xiao-Yun; Wu Yan-Hua; Yu Wei; Gao Wei; Fu Guang-Sheng

    2012-01-01

    The n-ZnO/p-Si heterojunction was fabricated by depositing high quality single crystalline aluminium-doped n-type ZnO film on p-type Si using the laser molecular beam epitaxy technique. The heterojunction exhibited a good rectifying behavior.The electrical properties of the heterojunction were investigated by means of temperature dependence current density-voltage measurements.The mechanism of the current transport was proposed based on the band structure of the heterojunction.When the applied bias V is lower than 0.15 V,the current follows the Ohmic behavior.When 0.15 V < V < 0.6 V,the transport property is dominated by diffusion or recombination in the junction space charge region,while at higher voltages (V > 0.6 V),the space charge limited effect becomes the main transport mechanism.The current-voltage characteristic under illumination was also investigated.The photovoltage and the short circuit current density of the heterojunction aproached 270 mV and 2.10 mA/cm2,respectively.

  6. Growth of very large InN microcrystals by molecular beam epitaxy using epitaxial lateral overgrowth

    Energy Technology Data Exchange (ETDEWEB)

    Kamimura, J., E-mail: kamimura@pdi-berlin.de [Department of Engineering and Applied Sciences, Sophia University, 7-1 Kioicho, Chiyoda-ku, Tokyo 102-8554 (Japan); Kishino, K.; Kikuchi, A. [Department of Engineering and Applied Sciences, Sophia University, 7-1 Kioicho, Chiyoda-ku, Tokyo 102-8554 (Japan); Sophia Nanotechnology Research Center, Sophia University, 7-1 Kioicho, Chiyoda-ku, Tokyo 102-8554 (Japan)

    2015-02-28

    Very thick InN (∼40 μm) was grown by molecular beam epitaxy using the epitaxial lateral overgrowth (ELO) technique. In some regions, the ELO of InN was observed as expected, indicating an important step toward fabricating quasi-bulk InN substrates. Interestingly, most parts of the sample consist of large flat-topped microcrystals and well-faceted microstructures. This is likely due to local growth condition variations during ELO, which is supported by an experiment where ELO of InN was performed on a substrate with various stripe mask patterns. TEM characterization of a flat top InN microcrystal revealed few stacking faults and only related threading dislocations. Defect-free small faceted microcrystals were also observed. The thick InN crystals show a narrow photoluminescence spectrum with a peak at 0.679 eV and linewidth of 16.8 meV at 4 K.

  7. Molecular-beam epitaxy of CdTe on large area Si(100)

    Science.gov (United States)

    Sporken, R.; Lange, M. D.; Faurie, J. P.; Petruzzello, J.

    1991-10-01

    We have grown CdTe directly on 2- and 5-in. diam Si(100) by molecular-beam epitaxy and characterized the layers by in situ reflection high-energy electron diffraction, double crystal x-ray diffraction, scanning electron microscopy, transmission electron microscopy, and low-temperature photoluminescence. The films are up to 10-μm thick and mirror-like over their entire surface. Even on 5-in. diam wafers, the structural and thickness uniformity is excellent. Two domains, oriented 90° apart, are observed in the CdTe films on oriented Si(100) substrates, whereas single-domain films are grown on Si(100) titled 6° or 8° toward [011]. The layers on misoriented substrates have better morphology than those on oriented Si(100), and the substrate tilt also eliminates twinning in the CdTe layers. First attempts to grow HgCdTe on Si(100 with a CdTe buffer layer have produced up to 10-μm thick layers with cutoff wavelengths between 5 and 10-μm and with an average full width at half-maximum of the double-crystal x-ray diffraction peaks of 200 arc s.

  8. Molecular beam epitaxy growth and magnetic properties of Cr-Co-Ga Heusler alloy films

    Energy Technology Data Exchange (ETDEWEB)

    Feng, Wuwei, E-mail: wfeng@cugb.edu.cn; Wang, Weihua [School of Materials Science and Technology, China University of Geosciences, Beijing 100083 (China); Zhao, Chenglong [Key Laboratory for Renewable Energy, Beijing Key Laboratory for New Energy Materials and Devices, Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190 (China); Van Quang, Nguyen; Cho, Sunglae, E-mail: slcho@ulsan.ac.kr [Department of Physics, University of Ulsan, Ulsan 680-749 (Korea, Republic of); Dung, Dang Duc [Department of General Physics, School of Engineering Physics, Ha Noi University of Science and Technology, 1 Dai Co Viet Road, Ha Noi (Viet Nam)

    2015-11-15

    We have re-investigated growth and magnetic properties of Cr{sub 2}CoGa films using molecular beam epitaxy technique. Phase separation and precipitate formation were observed experimentally again in agreement with observation of multiple phases separation in sputtered Cr{sub 2}CoGa films by M. Meinert et al. However, significant phase separation could be suppressed by proper control of growth conditions. We showed that Cr{sub 2}CoGa Heusler phase, rather than Co{sub 2}CrGa phase, constitutes the majority of the sample grown on GaAs(001) at 450 {sup o}C. The measured small spin moment of Cr{sub 2}CoGa is in agreement with predicted HM-FCF nature; however, its Curie temperature is not as high as expected from the theoretical prediction probably due to the off-stoichiometry of Cr{sub 2}CoGa and the existence of the disorders and phase separation.

  9. Impact of extended defects on recombination in CdTe heterostructures grown by molecular beam epitaxy

    Energy Technology Data Exchange (ETDEWEB)

    Zaunbrecher, Katherine N. [Department of Physics, Colorado State University, Fort Collins, Colorado 80523, USA; National Renewable Energy Laboratory, Golden, Colorado 80401, USA; Kuciauskas, Darius [National Renewable Energy Laboratory, Golden, Colorado 80401, USA; Swartz, Craig H. [Materials Science, Engineering and Commercialization Program, Texas State University, San Marcos, Texas 78666, USA; Dippo, Pat [National Renewable Energy Laboratory, Golden, Colorado 80401, USA; Edirisooriya, Madhavie [Materials Science, Engineering and Commercialization Program, Texas State University, San Marcos, Texas 78666, USA; Ogedengbe, Olanrewaju S. [Materials Science, Engineering and Commercialization Program, Texas State University, San Marcos, Texas 78666, USA; Sohal, Sandeep [Materials Science, Engineering and Commercialization Program, Texas State University, San Marcos, Texas 78666, USA; Hancock, Bobby L. [Materials Science, Engineering and Commercialization Program, Texas State University, San Marcos, Texas 78666, USA; LeBlanc, Elizabeth G. [Materials Science, Engineering and Commercialization Program, Texas State University, San Marcos, Texas 78666, USA; Jayathilaka, Pathiraja A. R. D. [Materials Science, Engineering and Commercialization Program, Texas State University, San Marcos, Texas 78666, USA; Barnes, Teresa M. [National Renewable Energy Laboratory, Golden, Colorado 80401, USA; Myers, Thomas H. [Materials Science, Engineering and Commercialization Program, Texas State University, San Marcos, Texas 78666, USA

    2016-08-29

    Heterostructures with CdTe and CdTe 1-xSex (x ~ 0.01) absorbers between two wider-band-gap Cd1-xMgxTe barriers (x ~ 0.25-0.3) were grown by molecular beam epitaxy to study carrier generation and recombination in bulk materials with passivated interfaces. Using a combination of confocal photoluminescence (PL), time-resolved PL, and low-temperature PL emission spectroscopy, two extended defect types were identified and the impact of these defects on charge-carrier recombination was analyzed. The dominant defects identified by confocal PL were dislocations in samples grown on (211)B CdTe substrates and crystallographic twinning-related defects in samples on (100)-oriented InSb substrates. Low-temperature PL shows that twin-related defects have a zero-phonon energy of 1.460 eV and a Huang-Rhys factor of 1.50, while dislocation-dominated samples have a 1.473-eV zero-phonon energy and a Huang-Rhys factor of 1.22. The charge carrier diffusion length near both types of defects is ~6 um, suggesting that recombination is limited by diffusion dynamics. For heterostructures with a low concentration of extended defects, the bulk lifetime was determined to be 2.2 us with an interface recombination velocity of 160 cm/s and an estimated radiative lifetime of 91 us.

  10. A GaAs/GaInP dual junction solar cell grown by molecular beam epitaxy

    International Nuclear Information System (INIS)

    We report the recent result of GaAs/GaInP dual-junction solar cells grown by all solid-state molecular-beam-epitaxy (MBE). The device structure consists of a GaIn0.48P homojunction grown epitaxially upon a GaAs homojunction, with an interconnected GaAs tunnel junction. A photovoltaic conversion efficiency of 27% under the AM1.5 globe light intensity is realized for a GaAs/GaInP dual-junction solar cell, while the efficiencies of 26% and 16.6% are reached for a GaAs bottom cell and a GaInP top cell, respectively. The energy loss mechanism of our GaAs/GaInP tandem dual-junction solar cells is discussed. It is demonstrated that the MBE-grown phosphide-containing III—V compound semiconductor solar cell is very promising for achieving high energy conversion efficiency. (semiconductor devices)

  11. Mapping growth windows in quaternary perovskite oxide systems by hybrid molecular beam epitaxy

    Science.gov (United States)

    Brahlek, Matthew; Zhang, Lei; Zhang, Hai-Tian; Lapano, Jason; Dedon, Liv R.; Martin, Lane W.; Engel-Herbert, Roman

    2016-09-01

    Requisite to growing stoichiometric perovskite thin films of the solid-solution A'1-xAxBO3 by hybrid molecular beam epitaxy is understanding how the growth conditions interpolate between the end members A'BO3 and ABO3, which can be grown in a self-regulated fashion, but under different conditions. Using the example of La1-xSrxVO3, the two-dimensional growth parameter space that is spanned by the flux of the metal-organic precursor vanadium oxytriisopropoxide and composition, x, was mapped out. The evolution of the adsorption-controlled growth window was obtained using a combination of X-ray diffraction, atomic force microscopy, reflection high-energy electron-diffraction (RHEED), and Rutherford backscattering spectroscopy. It is found that the stoichiometric growth conditions can be mapped out quickly with a single calibration sample using RHEED. Once stoichiometric conditions have been identified, the out-of-plane lattice parameter can be utilized to precisely determine the composition x. This strategy enables the identification of growth conditions that allow the deposition of stoichiometric perovskite oxide films with random A-site cation mixing, which is relevant to a large number of perovskite materials with interesting properties, e.g., high-temperature superconductivity and colossal magnetoresistance, that emerge in solid solution A'1-xAxBO3.

  12. Magnetotransport in MgO-based magnetic tunnel junctions grown by molecular beam epitaxy (invited)

    Energy Technology Data Exchange (ETDEWEB)

    Andrieu, S., E-mail: stephane.andrieu@univ-lorraine.fr; Bonell, F.; Hauet, T.; Montaigne, F. [Institut Jean Lamour, Nancy University/CNRS, Bd des Aiguillettes, BP239, 54506 Vandoeuvre-lès-Nancy (France); Calmels, L.; Snoeck, E. [CEMES, CNRS and Toulouse University, 29 rue Jeanne Marvig, 31055 Toulouse (France); Lefevre, P.; Bertran, F. [Synchrotron SOLEIL-CNRS, L' Orme des Merisiers, Saint-Aubin, BP48, 91192 Gif-sur-Yvette cedex (France)

    2014-05-07

    The strong impact of molecular beam epitaxy growth and Synchrotron Radiation characterization tools in the understanding of fundamental issues in nanomagnetism and spintronics is illustrated through the example of fully epitaxial MgO-based Magnetic Tunnel Junctions (MTJs). If ab initio calculations predict very high tunnel magnetoresistance (TMR) in such devices, some discrepancy between theory and experiments still exists. The influence of imperfections in real systems has thus to be considered like surface contaminations, structural defects, unexpected electronic states, etc. The influence of possible oxygen contamination at the Fe/MgO(001) interface is thus studied, and is shown to be not so detrimental to TMR as predicted by ab initio calculations. On the contrary, the decrease of dislocations density in the MgO barrier of MTJs using Fe{sub 1−x}V{sub x} electrodes is shown to significantly increase TMR. Finally, unexpected transport properties in Fe{sub 1−X}Co{sub x}/MgO/Fe{sub 1−X}Co{sub x} (001) are presented. With the help of spin and symmetry resolved photoemission and ab initio calculation, the TMR decrease for Co content higher than 25% is shown to come from the existence of an interface state and the shift of the empty Δ1 minority spin state towards the Fermi level.

  13. Comparisons between tokamak fueling of gas puffing and supersonic molecular beam injection in 2D simulations

    International Nuclear Information System (INIS)

    Plasma fueling with high efficiency and deep injection is very important to enable fusion power performance requirements. It is a powerful and efficient way to study neutral transport dynamics and find methods of improving the fueling performance by doing large scale simulations. Two basic fueling methods, gas puffing (GP) and supersonic molecular beam injection (SMBI), are simulated and compared in realistic divertor geometry of the HL-2A tokamak with a newly developed module, named trans-neut, within the framework of BOUT++ boundary plasma turbulence code [Z. H. Wang et al., Nucl. Fusion 54, 043019 (2014)]. The physical model includes plasma density, heat and momentum transport equations along with neutral density, and momentum transport equations. Transport dynamics and profile evolutions of both plasma and neutrals are simulated and compared between GP and SMBI in both poloidal and radial directions, which are quite different from one and the other. It finds that the neutrals can penetrate about four centimeters inside the last closed (magnetic) flux surface during SMBI, while they are all deposited outside of the LCF during GP. It is the radial convection and larger inflowing flux which lead to the deeper penetration depth of SMBI and higher fueling efficiency compared to GP

  14. In-situ spectral reflectance for improving molecular beam epitaxy device growth

    Energy Technology Data Exchange (ETDEWEB)

    Breiland, W.G. [Sandia National Labs., Albuquerque, NM (United States). Chemical Processing Sciences Dept.; Hammons, B.E.; Hou, H.Q.; Killeen, K.P.; Klem, J.F.; Reno, J.L.; Sherwin, M.

    1997-05-01

    This report summarizes the development of in situ spectral reflectance as a tool for improving the quality, reproducibility, and yield of device structures grown from compound semiconductors. Although initially targeted at MBE (Molecular Beam Epitaxy) machines, equipment difficulties forced the authors to test most of their ideas on a MOCVD (Metal Organic Chemical Vapor Deposition) reactor. A pre-growth control strategy using in situ reflectance has led to an unprecedented demonstration of process control on one of the most difficult device structures that can be grown with compound semiconductor materials. Hundreds of vertical cavity surface emitting lasers (VCSEL`s) were grown with only {+-} 0.3% deviations in the Fabry-Perot cavity wavelength--a nearly ten-fold improvement over current calibration methods. The success of the ADVISOR (Analysis of Deposition using Virtual Interfaces and Spectroscopic Optical Reflectance) method has led to a great deal of interest from the commercial sector, including use by Hewlett Packard and Honeywell. The algorithms, software and reflectance design are being evaluated for patents and/or license agreements. A small company, Filmetrics, Inc., is incorporating the ADVISOR analysis method in its reflectometer product.

  15. Effects of magnesium contents in ZnMgO ternary alloys grown by molecular beam epitaxy

    Energy Technology Data Exchange (ETDEWEB)

    Hu, Sheng-Yao, E-mail: shenghu2729@yahoo.com [Department of Digital Technology Design, Tungfang Design Institute, Hunei, Kaohsiung 82941, Taiwan (China); Chou, Wu-Ching [Department of Electrophysics, National Chiao Tung University, Hsinchu 30010, Taiwan (China); Weng, Yu-Hsiang [Department of Electrical Engineering, National Taiwan Ocean University, Keelung 20224, Taiwan (China)

    2015-07-05

    Highlights: • ZnMgO alloys with different Mg contents have been produced by MBE. • Optical and structural properties have been measured and investigated. • Stress is tensile and is increased as the increasing of Mg contents. • The asymmetric behavior of the Raman mode was influenced due to the Mg contents. - Abstract: Ternary alloys of ZnMgO samples with different magnesium contents have been grown by molecular beam epitaxy on the sapphire substrates. Room temperature photoluminescence energy of ZnMgO shifted as high as 3.677 eV by increasing Mg contents corresponding to the higher Urbach average localization energy which indicates more randomness in the alloys with higher Mg contents. XRD results are also verified that the c-axis length decreases as the increasing Mg contents linking to the increased tensile stress produced by the Mg atoms. Raman spectra analyzed by the spatial correlation model to describe that the linewidth Γ is decreased but the correlation length L is increased as the increasing of Mg contents.

  16. Hybrid molecular beam epitaxy for the growth of stoichiometric BaSnO{sub 3}

    Energy Technology Data Exchange (ETDEWEB)

    Prakash, Abhinav, E-mail: praka019@umn.edu; Dewey, John; Yun, Hwanhui; Jeong, Jong Seok; Mkhoyan, K. Andre; Jalan, Bharat, E-mail: bjalan@umn.edu [Department of Chemical Engineering and Materials Science, University of Minnesota, Minneapolis, Minnesota 55455 (United States)

    2015-11-15

    Owing to its high room-temperature electron mobility and wide bandgap, BaSnO{sub 3} has recently become of significant interest for potential room-temperature oxide electronics. A hybrid molecular beam epitaxy (MBE) approach for the growth of high-quality BaSnO{sub 3} films is developed in this work. This approach employs hexamethylditin as a chemical precursor for tin, an effusion cell for barium, and a radio frequency plasma source for oxygen. BaSnO{sub 3} films were thus grown on SrTiO{sub 3} (001) and LaAlO{sub 3} (001) substrates. Growth conditions for stoichiometric BaSnO{sub 3} were identified. Reflection high-energy electron diffraction (RHEED) intensity oscillations, characteristic of a layer-by-layer growth mode were observed. A critical thickness of ∼1 nm for strain relaxation was determined for films grown on SrTiO{sub 3} using in situ RHEED. Scanning transmission electron microscopy combined with electron energy-loss spectroscopy and energy dispersive x-ray spectroscopy confirmed the cube-on-cube epitaxy and composition. The importance of precursor chemistry is discussed in the context of the MBE growth of BaSnO{sub 3}.

  17. Formation of Ge-Sn nanodots on Si(100 surfaces by molecular beam epitaxy

    Directory of Open Access Journals (Sweden)

    Yu Ing-Song

    2011-01-01

    Full Text Available Abstract The surface morphology of Ge0.96Sn0.04/Si(100 heterostructures grown at temperatures from 250 to 450°C by atomic force microscopy (AFM and scanning tunnel microscopy (STM ex situ has been studied. The statistical data for the density of Ge0.96Sn0.04 nanodots (ND depending on their lateral size have been obtained. Maximum density of ND (6 × 1011 cm-2 with the average lateral size of 7 nm can be obtained at 250°C. Relying on the reflection of high energy electron diffraction, AFM, and STM, it is concluded that molecular beam growth of Ge1-xSnx heterostructures with the small concentrations of Sn in the range of substrate temperatures from 250 to 450°C follows the Stranski-Krastanow mechanism. Based on the technique of recording diffractometry of high energy electrons during the process of epitaxy, the wetting layer thickness of Ge0.96Sn0.04 films is found to depend on the temperature of the substrate.

  18. Graphene films grown on sapphire substrates via solid source molecular beam epitaxy

    Institute of Scientific and Technical Information of China (English)

    Tang Jun; Kang Chao-Yang; Li Li-Min; Liu Zhong-Liang; Yan Wen-Sheng; Wei Shi-Qiang; Xu Peng-Shou

    2012-01-01

    A method for growing graphene on a sapphire substrate by depositing an SiC buffer layer and then annealing at high temperature in solid source molecular beam epitaxy(SSMBE)equipment was presented.The structural and electronic properties of the samples were characterized by reflection high energy diffraction(RHEED),X-ray diffractionφ scans,Raman spectroscopy,and near edge X-ray absorption fine structure(NEXAFS)spectroscopy.The results of the RHEED and φ scan,as well as the Raman spectra,showed that an epitaxial hexagonal α-SiC layer was grown on the sapphire substrate.The results of the Raman and NEXAFS spectra revealed that the graphene films with the AB Bernal stacking structure were formed on the sapphire substrate after annealing.The layer number of the graphene was between four and five,and the thickness of the unreacted SiC layer was about 1-1.5 mm.

  19. Shock tube coupled to the time-of-flight mass spectrometer via a molecular beam sampling system.

    Science.gov (United States)

    Krizancic, I; Haluk, M; Cho, S H; Trass, O

    1979-07-01

    A method for continuous mass spectrometric analysis of high-temperature reacting gas mixtures is described. The apparatus consists of a unique combination of three devices: the shock tube, the time-of-flight mass spectrometer, and the supersonic molecular beam. The driven section of the shock tube constitutes the reservoir of a supersonic molecular beam by which gas is continuously extracted from the reaction zone and introduced through a two-stage high-capacity vacuum system into the ionization region of the mass spectrometer. The shock tube and the mass spectrometer are coupled at right angles to one another. This configuration avoids excessive pressure buildup in the mass spectrometer system. The apparatus has an estimated mass resolution of 100 amu, a frequency range of 10-100 kHz, and can be operated over a wide range of shock conditions during the complete high-temperature pulse. PMID:18699630

  20. The very slow expansion of an ultracold plasma formed in a seeded supersonic molecular beam of NO

    CERN Document Server

    Morrison, J P; Grant, E R

    2008-01-01

    The double-resonant laser excitation of nitric oxide, cooled to 1 K in a seeded supersonic molecular beam, yields a gas of $\\approx10^{12}$ molecules cm$^{-3}$ in a single selected Ryberg state. This population evolves to produce prompt free electrons and a durable cold plasma of electrons and intact NO$^{+}$ ions. This plasma travels with the molecular beam through a field free region to encounter a grid. The atomic weight of the expansion gas controls the beam velocity and hence the flight time from the interaction region to the grid. Monitoring electron production as the plasma traverses this grid measures its longitudinal width as a function of flight time. Comparing these widths to the width of the laser beam that defines the initial size of the illuminated volume allows us to gauge the rate of expansion of the plasma. We find that the plasma created from the evolution of a Rydberg gas of NO expands at a small but measurable rate, and that this rate of expansion accords with the Vlasov equations for an i...

  1. A molecular-beam study of the dissociative chemisorption of O2 on Ir(110)-(1×2)

    OpenAIRE

    Mullins, C B; Wang, Y.; Weinberg, W. H.

    1989-01-01

    The zero-coverage probability of dissociative chemisorption of O2 on Ir(110)-(1×2) has been measured using molecular-beam techniques for a wide range of incident kinetic energies, incident angles, and surface temperatures. The data indicate that a trapping-mediated mechanism is responsible for dissociative chemisorption at low energies, whereas at high energies a direct mechanism accounts for dissociative adsorption. Total energy scaling approximately describes the dissociative dynamics on th...

  2. Comparison of Morphology Evolution of Ge(001) Homoepitaxial Films Grown by Pulsed Laser Deposition and Molecular Beam Epitaxy

    OpenAIRE

    McCamy, James W.; Shin, Byungha; Leonard, John P.; Aziz, Michael

    2005-01-01

    Using a dual Molecular Beam Epitaxy (MBE)-Pulsed Laser Deposition (PLD) Ultra-High Vacuum chamber, we have conducted the first experiments under identical thermal, background, and surface preparation conditions to compare Ge(001) homoepitaxial growth morphology in PLD and MBE. We find that in PLD with low kinetic energy and in MBE the film morphology evolves in a similar fashion: initially irregularly shaped mounds form, followed by pyramidal mounds with edges of the square-base along direc...

  3. Comparison of Cherenkov excited fluorescence and phosphorescence molecular sensing from tissue with external beam irradiation.

    Science.gov (United States)

    Lin, Huiyun; Zhang, Rongxiao; Gunn, Jason R; Esipova, Tatiana V; Vinogradov, Sergei; Gladstone, David J; Jarvis, Lesley A; Pogue, Brian W

    2016-05-21

    Ionizing radiation delivered by a medical linear accelerator (LINAC) generates Cherenkov emission within the treated tissue. A fraction of this light, in the 600-900 nm wavelength region, propagates through centimeters of tissue and can be used to excite optical probes in vivo, enabling molecular sensing of tissue analytes. The success of isolating the emission signal from this Cherenkov excitation background is dependent on key factors such as: (i) the Stokes shift of the probe spectra; (ii) the excited state lifetime; (iii) the probe concentration; (iv) the depth below the tissue surface; and (v) the radiation dose used. Previous studies have exclusively focused on imaging phosphorescent dyes, rather than fluorescent dyes. However there are only a few biologically important phosphorescent dyes and yet in comparison there are thousands of biologically relevant fluorescent dyes. So in this study the focus was a study of efficacy of Cherenkov-excited luminescence using fluorescent commercial near-infrared probes, IRDye 680RD, IRDye 700DX, and IRDye 800CW, and comparing them to the well characterized phosphorescent probe Oxyphor PtG4, an oxygen sensitive dye. Each probe was excited by Cherenkov light from a 6 MV external radiation beam, and measured in continuous wave or time-gated modes. The detection was performed by spectrally resolving the luminescence signals, and measuring them with spectrometer-based separation on an ICCD detector. The results demonstrate that IRDye 700DX and PtG4 allowed for the maximal signal to noise ratio. In the case of the phosphorescent probe, PtG4, with emission decays on the microsecond (μs) time scale, time-gated acquisition was possible, and it allowed for higher efficacy in terms of the probe concentration and detection depth. Phantoms containing the probe at 5 mm depth could be detected at concentrations down to the nanoMolar range, and at depths into the tissue simulating phantom near 3 cm. In vivo studies showed that 5

  4. Comparison of Cherenkov excited fluorescence and phosphorescence molecular sensing from tissue with external beam irradiation

    Science.gov (United States)

    Lin, Huiyun; Zhang, Rongxiao; Gunn, Jason R.; Esipova, Tatiana V.; Vinogradov, Sergei; Gladstone, David J.; Jarvis, Lesley A.; Pogue, Brian W.

    2016-05-01

    Ionizing radiation delivered by a medical linear accelerator (LINAC) generates Cherenkov emission within the treated tissue. A fraction of this light, in the 600–900 nm wavelength region, propagates through centimeters of tissue and can be used to excite optical probes in vivo, enabling molecular sensing of tissue analytes. The success of isolating the emission signal from this Cherenkov excitation background is dependent on key factors such as: (i) the Stokes shift of the probe spectra; (ii) the excited state lifetime; (iii) the probe concentration; (iv) the depth below the tissue surface; and (v) the radiation dose used. Previous studies have exclusively focused on imaging phosphorescent dyes, rather than fluorescent dyes. However there are only a few biologically important phosphorescent dyes and yet in comparison there are thousands of biologically relevant fluorescent dyes. So in this study the focus was a study of efficacy of Cherenkov-excited luminescence using fluorescent commercial near-infrared probes, IRDye 680RD, IRDye 700DX, and IRDye 800CW, and comparing them to the well characterized phosphorescent probe Oxyphor PtG4, an oxygen sensitive dye. Each probe was excited by Cherenkov light from a 6 MV external radiation beam, and measured in continuous wave or time-gated modes. The detection was performed by spectrally resolving the luminescence signals, and measuring them with spectrometer-based separation on an ICCD detector. The results demonstrate that IRDye 700DX and PtG4 allowed for the maximal signal to noise ratio. In the case of the phosphorescent probe, PtG4, with emission decays on the microsecond (μs) time scale, time-gated acquisition was possible, and it allowed for higher efficacy in terms of the probe concentration and detection depth. Phantoms containing the probe at 5 mm depth could be detected at concentrations down to the nanoMolar range, and at depths into the tissue simulating phantom near 3 cm. In vivo studies showed that 5

  5. Combustion of butanol isomers - A detailed molecular beam mass spectrometry investigation of their flame chemistry

    Energy Technology Data Exchange (ETDEWEB)

    Osswald, Patrick; Gueldenberg, Hanna; Kohse-Hoeinghaus, Katharina [Department of Chemistry, Bielefeld University (Germany); Yang, Bin [National Synchrotron Radiation Laboratory, University of Science and Technology of China, Hefei, Anhui (China); Department of Aerospace and Mechanical Engineering, University of Southern California, Los Angeles, CA (United States); Yuan, Tao; Qi, Fei [National Synchrotron Radiation Laboratory, University of Science and Technology of China, Hefei, Anhui (China)

    2011-01-15

    The combustion chemistry of the four butanol isomers, 1-, 2-, iso- and tert-butanol was studied in flat, premixed, laminar low-pressure (40 mbar) flames of the respective alcohols. Fuel-rich ({phi} = 1.7) butanol-oxygen-(25%)argon flames were investigated using different molecular beam mass spectrometry (MBMS) techniques. Quantitative mole fraction profiles are reported as a function of burner distance. In total, 57 chemical compounds, including radical and isomeric species, have been unambiguously assigned and detected quantitatively in each flame using a combination of vacuum ultraviolet (VUV) photoionization (PI) and electron ionization (EI) MBMS. Synchrotron-based PI-MBMS allowed to separate isomeric combustion intermediates according to their different ionization thresholds. Complementary measurements in the same flames with a high mass-resolution EI-MBMS system provided the exact elementary composition of the involved species. Resulting mole fraction profiles from both instruments are generally in good quantitative agreement. In these flames of the four butanol isomers, temperature, measured by laser-induced fluorescence (LIF) of seeded nitric oxide, and major species profiles are strikingly similar, indicating seemingly analog global combustion behavior. However, significant variations in the intermediate species pool are observed between the fuels and discussed with respect to fuel-specific destruction pathways. As a consequence, different, fuel-specific pollutant emissions may be expected, by both their chemical nature and concentrations. The results reported here are the first of their kind from premixed isomeric butanol flames and are thought to be valuable for improving existing kinetic combustion models. (author)

  6. Isotype InGaN/GaN heterobarrier diodes by ammonia molecular beam epitaxy

    Energy Technology Data Exchange (ETDEWEB)

    Fireman, Micha N.; Browne, David A.; Speck, James S. [Materials Department, University of California, Santa Barbara, California 93106 (United States); Mishra, Umesh K. [Electrical and Computer Engineering Department, University of California, Santa Barbara, California 93106 (United States)

    2016-02-07

    The design of isotype InGaN/GaN heterobarrier diode structures grown by ammonia molecular beam epitaxy is presented. On the (0001) Ga-polar plane, a structure consisting of a surface n{sup +} GaN contact layer, followed by a thin InGaN layer, followed by a thick unintentionally doped (UID) GaN layer, and atop a buried n{sup +} GaN contact layer induces a large conduction band barrier via a depleted UID GaN layer. Suppression of reverse and subthreshold current in such isotype barrier devices under applied bias depends on the quality of this composite layer polarization. Sample series were grown under fixed InGaN growth conditions that varied either the UID GaN NH{sub 3} flow rate or the UID GaN thickness, and under fixed UID GaN growth conditions that varied InGaN growth conditions. Decreases in subthreshold current and reverse bias current were measured for thicker UID GaN layers and increasing InGaN growth rates. Temperature-dependent analysis indicated that although extracted barrier heights were lower than those predicted by 1D Schrödinger Poisson simulations (0.9 eV–1.4 eV for In compositions from 10% to 15%), optimized growth conditions increased the extracted barrier height from ∼11% to nearly 85% of the simulated values. Potential subthreshold mechanisms are discussed, along with those growth factors which might affect their prevalence.

  7. Atom probe tomography characterisation of a laser diode structure grown by molecular beam epitaxy

    Energy Technology Data Exchange (ETDEWEB)

    Bennett, Samantha E.; Humphreys, Colin J.; Oliver, Rachel A. [Department of Materials Science and Metallurgy, University of Cambridge, Pembroke Street, Cambridge, CB2 3QZ (United Kingdom); Smeeton, Tim M.; Hooper, Stewart E.; Heffernan, Jonathan [Sharp Laboratories of Europe Limited, Edmund Halley Road, Oxford Science Park, Oxford, OX4 4GB (United Kingdom); Saxey, David W.; Smith, George D. W. [Department of Materials, University of Oxford, Parks Road, Oxford, OX1 3PH (United Kingdom)

    2012-03-01

    Atom probe tomography (APT) has been used to achieve three-dimensional characterization of a III-nitride laser diode (LD) structure grown by molecular beam epitaxy (MBE). Four APT data sets have been obtained, with fields of view up to 400 nm in depth and 120 nm in diameter. These data sets contain material from the InGaN quantum well (QW) active region, as well as the surrounding p- and n-doped waveguide and cladding layers, enabling comprehensive study of the structure and composition of the LD structure. Two regions of the same sample, with different average indium contents (18% and 16%) in the QW region, were studied. The APT data are shown to provide easy access to the p-type dopant levels, and the composition of a thin AlGaN barrier layer. Next, the distribution of indium within the InGaN QW was analyzed, to assess any possible inhomogeneity of the distribution of indium (''indium clustering''). No evidence for a statistically significant deviation from a random distribution was found, indicating that these MBE-grown InGaN QWs do not require indium clusters for carrier localization. However, the APT data show steps in the QW interfaces, leading to well-width fluctuations, which may act to localize carriers. Additionally, the unexpected presence of a small amount (x = 0.005) of indium in a layer grown intentionally as GaN was revealed. Finally, the same statistical method applied to the QW was used to show that the indium distribution within a thick InGaN waveguide layer in the n-doped region did not show any deviation from randomness.

  8. Protective Sliding Carbon-Based Nanolayers Prepared by Argon or Nitrogen Ion-Beam Assisted Deposition on Ti6Al4V Alloy

    Directory of Open Access Journals (Sweden)

    Petr Vlcak

    2016-01-01

    Full Text Available The microstructure and the surface properties of samples coated by carbon-based nanolayer were investigated in an effort to increase the surface hardness and reduce the coefficient of friction of the Ti6Al4V alloy. Protective carbon-based nanolayers were fabricated by argon or nitrogen ion-beam assisted deposition at ion energy of 700 eV on Ti6Al4V substrates. The Raman spectra indicated that nanolayers had a diamond-like carbon character with sp2 rich bonds. The TiC and TiN compounds formed in the surface area were detected by X-ray diffraction. Nanoscratch tests showed increased adhesion of a carbon-based nanolayer deposited with ion assistance in comparison with a carbon nanolayer deposited without ion assistance. The results showed that argon ion assistance leads to greater nanohardness than a sample coated by a carbon-based nanolayer with nitrogen ion assistance. A more than twofold increase in nanohardness and a more than fivefold decrease in the coefficient of friction were obtained for samples coated by a carbon-based nanolayer with ion assistance, in comparison with the reference sample.

  9. Molecular Assisted Breeding and Adaptability Analysis of Zhongyouza 11 with Super High Oil Content

    Institute of Scientific and Technical Information of China (English)

    2007-01-01

    Using a three-line system of Shaan 2A cytoplasmic male sterility, a hybrid variety rapeseed, Zhongyouza 11, was developed by the combination of traditional methods and a molecular marker-assisted breeding technique. This hybrid variety had high grain yield, high oil content, wide adaptability, and good quality. The oil content of Zhongyouza 11 is steadily above 43% in the three ecological regions along the Yangtze River valley, which is the largest winter oilseed production area in China. The highest oil content of Zhongyouza 11 reached 46.68% in the upper reaches of the Yangtze River valley in 2003-2004, which was the highest among all lines involved in the national regional rapeseed variety trials. In the regional yield trials in Hubei Province, the average yield of Zhongyouza 11 reached 2 853 kg ha-1 (2002-2004), yielding more than the control variety Zhongshuang 6 by 11.34%. In the national trials, the yield of Zhongyouza 11 reached 2 405.7, 2 697.3, and 2 770.2 kg ha-1 in the upper, middle, and lower reaches of the Yangtze River valley, yielding more than the control varieties by 11.52, 12.9, and 14.92%, respectively, in 2003-2005. Both the high oil content and high grain yield contributed to the high oil yield of Zhongyouza 11. The oil yield of Zhongyouza 11 in the national trials reached 1083.3, 1210.2, and 1224.8 kg ha-1, yielding more than the controls by 29.42, 27.65, and 20.98%, respectively, in the upper, middle, and lower reaches of the Yangtze River valley. The highest oil yield reached 1369.65 kg ha-1 in the middle reach of the Yangtze River valley(2003-2004), with an increase of 46.21% compared to the control. The experimental sites distributed widely along the Yangtze River valley, cover most of the Chinese winter rapeseed production areas. Among the 89 experimental location/years, the yield of Zhongyouza 11 surpassed the controls at 77 location/years in the trials, indicating its wide adaptability.Zhongyouza 11 was the only one that passed the

  10. Molecular Beam Epitaxy-Grown InGaN Nanowires and Nanomushrooms for Solid State Lighting

    KAUST Repository

    Gasim, Anwar A.

    2012-05-01

    InGaN is a promising semiconductor for solid state lighting thanks to its bandgap which spans the entire visible regime of the electromagnetic spectrum. InGaN is grown heteroepitaxially due to the absence of a native substrate; however, this results in a strained film and a high dislocation density—two effects that have been associated with efficiency droop, which is the disastrous drop in efficiency of a light-emitting diode (LED) as the input current increases. Heteroepitaxially grown nanowires have recently attracted great interest due to their property of eliminating the detrimental effects of the lattice mismatch and the corollary efficiency droop. In this study, InGaN nanowires were grown on a low-cost Si (111) substrate via molecular beam epitaxy. Unique nanostructures, taking the form of mushrooms, have been observed in localized regions on the samples. These nanomushrooms consist of a nanowire body with a wide cap on top. Photoluminescence characterization revealed that the nanowires emit violet-blue, whilst the nanomushrooms emit a broad yellow-orange-red luminescence. The simultaneous emission from the nanowires and nanomushrooms forms white light. Structural characterization of a single nanomushroom via transmission electron microscopy revealed a simultaneous increase in indium and decrease in gallium at the interface between the body and the cap. Furthermore, the cap itself was found to be indium-rich, confirming it as the source of the longer wavelength yellow-orange-red luminescence. It is believed that the nanomushroom cap formed as a consequence of the saturation of growth on the c-plane of the nanowire. It is proposed that the formation of an indium droplet on the tip of the nanowire saturated growth on the c-plane, forcing the indium and gallium adatoms to incorporate on the sidewall m-planes instead, but only at the nanowire tip. This resulted in the formation of a mushroom-like cap on the tip. How and why the indium droplets formed is not

  11. Application of computer-assisted molecular modeling (CAMM) for immunoassay of low molecular weight food contaminants: A review

    Science.gov (United States)

    Immunoassay for low molecular weight food contaminants, such as pesticides, veterinary drugs, and mycotoxins is now a well-established technique which meets the demands for a rapid, reliable, and cost-effective analytical method. However, due to limited understanding of the fundamental aspects of i...

  12. Effect of surface roughness and size of beam on squeeze-film damping—Molecular dynamics simulation study

    Energy Technology Data Exchange (ETDEWEB)

    Kim, Hojin; Strachan, Alejandro [School of Materials Engineering and Birck Nanotechnology Center, Purdue University, West Lafayette, Indiana 47907 (United States)

    2015-11-28

    We use large-scale molecular dynamics (MD) to characterize fluid damping between a substrate and an approaching beam. We focus on the near contact regime where squeeze film (where fluid gap is comparable to the mean free path of the gas molecules) and many-body effects in the fluid become dominant. The MD simulations provide explicit description of many-body and non-equilibrium processes in the fluid as well as the surface topography. We study how surface roughness and beam width increases the damping coefficient due to their effect on fluid mobility. We find that the explicit simulations are in good agreement with prior direct simulation Monte Carlo results except at near-contact conditions where many-body effects in the compressed fluid lead the increased damping and weaker dependence on beam width. We also show that velocity distributions near the beam edges and for short gaps deviate from the Boltzmann distribution indicating a degree of local non-equilibrium. These results will be useful to parameterize compact models used for microsystem device-level simulations and provide insight into mesoscale simulations of near-contact damping.

  13. Studies on electron-beam irradiation and plastic deformation of medical-grade ultra-high molecular weight polyethylene

    Energy Technology Data Exchange (ETDEWEB)

    Czaja, Krystyna, E-mail: krystyna.czaja@uni.opole.p [Opole University, Faculty of Chemistry, Oleska 48, 45-052 Opole (Poland); SudoL, Marek [Opole University, Faculty of Chemistry, Oleska 48, 45-052 Opole (Poland)

    2011-03-15

    Separated and combined electron-beam irradiation and plastic deformation effects on the structures of ultra-high molecular weight polyethylene (UHMWPE) were studied. It was found that the concentration of carbonyl (ketones, esters and peresters), hydroxyl and vinyl groups increases with the growing dose of adsorbed electrons. It also tends to exhibit a slight increase in the melting point and crystallinity of the samples. A mechanical stress in the polymer was found to accelerate radiation-induced degradation. It was concluded that each of the factors studied (i.e. electron beam sterilization and plastic deformation) had a different impact on the polymer structure. The change in the sequence of action of these factors can dramatically influence the process of UHMWPE destruction. Some effects may be limited or enhanced by the action of other factors. Therefore, the resulting effects of destructive factors depend qualitatively and quantitatively on their intensity and order.

  14. Studies on electron-beam irradiation and plastic deformation of medical-grade ultra-high molecular weight polyethylene

    Science.gov (United States)

    Czaja, Krystyna; SudoŁ, Marek

    2011-03-01

    Separated and combined electron-beam irradiation and plastic deformation effects on the structures of ultra-high molecular weight polyethylene (UHMWPE) were studied. It was found that the concentration of carbonyl (ketones, esters and peresters), hydroxyl and vinyl groups increases with the growing dose of adsorbed electrons. It also tends to exhibit a slight increase in the melting point and crystallinity of the samples. A mechanical stress in the polymer was found to accelerate radiation-induced degradation. It was concluded that each of the factors studied (i.e. electron beam sterilization and plastic deformation) had a different impact on the polymer structure. The change in the sequence of action of these factors can dramatically influence the process of UHMWPE destruction. Some effects may be limited or enhanced by the action of other factors. Therefore, the resulting effects of destructive factors depend qualitatively and quantitatively on their intensity and order.

  15. Ultraviolet light emitting diodes by ammonia molecular beam epitaxy on metamorphic (KAUST Repository

    Young, Erin C.

    2015-09-01

    © 2015. In this paper we demonstrate ultraviolet (UV) light emitting diodes (LEDs) grown on metamorphic AlGaN buffers on freestanding GaN (202-1) substrates by ammonia assisted molecular beam epitaxy (MBE). Misfit and related threading dislocations were confined to the stress relaxed, compositionally graded buffer layers, and single quantum well devices emitting at 355, 310 and 274. nm were grown on top of the graded buffers. The devices showed excellent structural and electrical (I-. V) characteristics.

  16. Computer-Assisted Drug Design: Genetic Algorithms and Structures of Molecular Clusters of Aromatic Hydrocarbons and Actinomycin D-Deoxyguanosine

    Science.gov (United States)

    Xiao, Yong Liang

    Molecular packing, clustering, and docking computations have been performed by empirical intermolecular energy minimization methods. The main focus of this study is finding a robust global search algorithm to solve intermolecular interaction problems, especially to apply an efficient algorithm to large-scale complex molecular systems such as drug-DNA binding or site selectivity which has increasing importance in drug design and drug discovery. Molecular packing in benzene, naphthalene, and anthracene crystals is analyzed in terms of molecular dimer interaction. Intermolecular energies of the gas dimer molecules are calculated for various intermolecular distances and orientations using empirical potential energy functions. The gas dimers are compared to pairs of molecules extracted from the observed crystal structures. Net atomic charges are obtained by the potential-derived method from 6-31G and 6-31G^{**} level ab initio wavefunctions. A new approach using a genetic algorithm is applied to predict structures of benzene, naphthalene, and anthracene molecular clusters. The computer program GAME (genetic algorithm for minimization of energy) has been developed to obtain the global energy minimum of clusters of dimer, trimer, and tetramer molecules. This test model has been further developed to applications of molecular docking. Docking calculations of deoxyguanosine molecules to actinomycin D were performed successfully to identify the binding sites of the drug molecule, which was revealed by actinomycin D-deoxyguanosine complex from the solved x-ray crystal structure. The comparison between the evolutionary computing method and conventional local optimization methods concluded that genetic algorithms are very competitive when it comes to complex, large-scale optimization. Full power of genetic algorithms can be unveiled in computer-assisted drug design only when the difficulties of including optimized molecular conformation in the algorithm are overcome. These

  17. Breeding Rice Restorer Lines with High Resistance to Bacterial Blight by Using Molecular Marker-Assisted Selection

    Institute of Scientific and Technical Information of China (English)

    DENG Qi-ming; WANG Shi-quan; ZHENG Ai-ping; ZHANG Hong-yu; LI Ping

    2006-01-01

    Two bacterial blight (BB) resistance genes, Xa21 and Xa4, from IRBB24 were introduced into hybrid rice restorer line Mianhui 725, which is highly susceptible to BB, by using hybridization and molecular marker-assisted selection technology. Four homologous restorer lines were obtained through testing the R target genes with molecular markers and analyzing parental genetic background. Inoculation of the four lines and their hybrids with the specific strains of Xanthomonas oryzae pv. oryzae, P1, P6 and seven representative strains of Chinese pathotype, C Ⅰ -CⅦ, showed that all of the four lines and their hybrids were highly resistant and presented broad resistance-spectrum to BB. The hybrids of G46A / R207-2 displayed good agronomic characters and high yield potential, and R207-2 was named Shuhui 207.

  18. Molecular beam epitaxy growth of SrO buffer layers on graphite and graphene for the integration of complex oxides

    Science.gov (United States)

    Ahmed, Adam S.; Wen, Hua; Ohta, Taisuke; Pinchuk, Igor V.; Zhu, Tiancong; Beechem, Thomas; Kawakami, Roland K.

    2016-08-01

    We report the successful growth of high-quality SrO films on highly-ordered pyrolytic graphite (HOPG) and single-layer graphene by molecular beam epitaxy. The SrO layers have (001) orientation as confirmed by X-ray diffraction (XRD) while atomic force microscopy measurements show continuous pinhole-free films having rms surface roughness of deposition show a strong dependence between the Dirac point and Sr oxidation. Subsequently, the SrO is leveraged as a buffer layer for more complex oxide integration via the demonstration of (001) oriented SrTiO3 grown atop a SrO/HOPG stack.

  19. InAsP/InGaAsP Strained Microstructures Grown by Gas Source Molecular Beam Epitaxy

    Institute of Scientific and Technical Information of China (English)

    CHEN Yi-Qiao; CHEN Jian-Xin; ZHANG Yong-Gang; LI Ai-Zhen; K. Frbjdh; B. Stotz

    2000-01-01

    Device quality InAsP/InGaAsP strained multiquantum-well (MQW) structures are successfully grown by using gas source molecular beam epitaxy method. The grown MQW and InGaAsP quanternary alloy are characterized by using x-ray diffraction, room temperature photoluminescence measurements, confirming that optimum growth condition and high quality material have been obtained for device application. The grown laser structures are processed into ridge waveguide lasers. A threshold current as low as 16mA at 250C for 300μm long device has been obtained. Temperature-dependent light-current measurement shows a characteristic temperature of75K.

  20. Evolution of self-assembled InAs/Gas(001) quantum dots grown by growth-interrupted molecular beam epitaxy

    OpenAIRE

    Balzarotti, A.

    2008-01-01

    Self-assembled InAs quantum dots (QDs) grown on GaAs(001) surface by molecular beam epitaxy under continuous and growth-interruption modes exhibit two families of QDs, quasi-3D (Q3D) and 3D QDs, whose volume density evolution is quantitatively described by a rate-equation kinetic model. The volume density of small Q3D QDs decreases exponentially with time during the interruption, while the single-dot mean volume of the large QDs increases by Ostwald ripening. The kinetics of growth involves c...

  1. Growth of high-quality SrTiO3 films using a hybrid molecular beam epitaxy

    OpenAIRE

    Jalan, Bharat; Engel-Herbert, Roman; Wright, Nicholas J.; Stemmer, Susanne

    2009-01-01

    A hybrid molecular beam epitaxy approach for atomic-layer controlled growth of high-quality SrTiO3 films with scalable growth rates was developed. The approach uses an effusion cell for Sr, a plasma source for oxygen, and a metal-organic source titanium tetra isopropoxide for Ti. SrTiO3 films were investigated as a function of cation flux ratio on 001 SrTiO3 and LaAlO30.3Sr2AlTaO60.7 LSAT substrates. Growth conditions for stoichiometric insulating films were identified. Persistent 180 oscilla...

  2. The thickness-dependent dynamic magnetic property of Co2FeAl films grown by molecular beam epitaxy

    Science.gov (United States)

    Qiao, Shuang; Nie, Shuaihua; Zhao, Jianhua; Zhang, Xinhui

    2014-10-01

    Co2FeAl films with different thickness were prepared at different temperature by molecular beam epitaxy. Their dynamic magnetic property was studied by the time-resolved magneto-optical Kerr effect measurements. It is observed that the intrinsic damping factor of Co2FeAl for [100] orientation is not related to the film's thickness and magnetic anisotropy as well as temperature at high-field regime, but increases with structural disorder of Co2FeAl. The dominant contribution from the inhomogeneous magnetic anisotropy is revealed to be responsible for the observed extremely nonlinear and drastic field-dependent damping factors at low-field regime.

  3. Molecular beam epitaxy growth of Si/SiGe bound-to-continuum quantum cascade structures for THz emission

    Energy Technology Data Exchange (ETDEWEB)

    Zhao, M. [Department of Physics, Chemistry and Biology, Linkoeping University, SE-581 83 Linkoeping (Sweden)], E-mail: Ming.Zhao@imec.be; Karim, A.; Hansson, G.V. [Department of Physics, Chemistry and Biology, Linkoeping University, SE-581 83 Linkoeping (Sweden); Ni, W.-X. [Department of Physics, Chemistry and Biology, Linkoeping University, SE-581 83 Linkoeping (Sweden); National Nano Device Laboratories, Hsinchu 30078, Taiwan, ROC (China); Townsend, P.; Lynch, S.A.; Paul, D.J. [Cavendish Laboratory, University of Cambridge, Madingley Road, Cambridge, CB3 0HE (United Kingdom)

    2008-11-03

    A Si/SiGe bound-to-continuum quantum cascade design for THz emission was grown using solid-source molecular beam epitaxy on Si{sub 0.8}Ge{sub 0.2} virtual substrates. The growth parameters were carefully studied and several samples with different boron doping concentrations were grown at optimized conditions. Extensive material characterizations revealed a high crystalline quality of the grown structures with an excellent growth control. Layer undulations resulting from a nonuniform strain field, introduced by high doping concentration, were observed. The device characterizations suggested that a modification on the design was needed in order to enhance the THz emission.

  4. Molecular beam epitaxy growth of MgZnSSe/ZnSSe Bragg mirrors controlled by in situ optical reflectometry.

    OpenAIRE

    Hegarty, John

    1995-01-01

    PUBLISHED In situ optical reflectometry at the wavelength of 488 nm was employed to control the growth of MgZnSSe/ZnSSe Bragg mirror stacks for the blue-green spectral region. 10- and 20-period layer structures of MgZnSSe/ZnSSe were grown on GaAs ~100! epilayers by molecular beam epitaxy. A room-temperature peak reflectance of 86% was obtained for the 20-period structure at the central wavelength of 474 nm. The results show that, in general, in situ optical monitoring of growth...

  5. Topological insulator Bi2Se3 thin films grown on double-layer graphene by molecular beam epitaxy

    OpenAIRE

    Song, Can-Li; Wang, Yi-Lin; Jiang, Ye-Ping; Zhang, Yi; Chang, Cui-Zu; Wang, Lili; He, Ke; Chen, Xi; Jia, Jin-Feng; Wang, Yayu; Fang, Zhong; Dai, Xi; Xie, Xin-Cheng; Qi, Xiao-Liang; Zhang, Shou-Cheng

    2010-01-01

    Atomically flat thin films of topological insulator Bi2Se3 have been grown on double-layer graphene formed on 6H-SiC(0001) substrate by molecular beam epitaxy. By a combined study of reflection high energy electron diffraction and scanning tunneling microscopy, we identified the Se-rich condition and temperature criterion for layer-by-layer growth of epitaxial Bi2Se3 films. The as-grown films without doping exhibit a low defect density of 1.0\\pm 0.2x1011/cm2, and become a bulk insulator at a ...

  6. Effect of source chemistry and growth parameters on AlGaAs grown by metalorganic molecular beam epitaxy

    Energy Technology Data Exchange (ETDEWEB)

    Abernathy, C.R.; Pearton, S.J.; Baiocchi, F.A.; Ambrose, T.; Jordan, A.S. (AT and T Bell Labs., Murray Hill, NJ (USA)); Bohling, D.A.; Muhr, G.T. (Air Products and Chemicals, Inc., Allentown, PA (USA))

    1991-03-01

    We have investigated the effect of V/III ratio and substrate temperature on the growth rate, Al composition, crystallinity, and impurity concentration of AlGaAs grown by metalorganic molecular beam epitaxy (MOMBE). The effect of these growth parameters on the deposition rates of both GaAs and AlAs has also been determined. By comparing films grown from various combinations of triethylgallium (TEGa), trimethylgallium (TMGa), triethylaluminium (TEA), and trimethylamine alane (TMAAl), we have been able to further identify the surface reactions which are most important in determining film composition and quality. (orig.).

  7. Enhanced growth of highly lattice-mismatched CdSe on GaAs substrates by molecular beam epitaxy

    Energy Technology Data Exchange (ETDEWEB)

    Wang, Jyh-Shyang, E-mail: jswang@cycu.edu.tw [Department of Physics, Chung Yuan Christian University, Chung-Li 32023, Taiwan (China); Center for Nano-Technology, Chung Yuan Christian University, Chung-Li 32023, Taiwan (China); Tsai, Yu-Hsuan; Wang, Hsiao-Hua; Ke, Han-Xiang; Tong, Shih-Chang [Department of Physics, Chung Yuan Christian University, Chung-Li 32023, Taiwan (China); Yang, Chu-Shou [Graduate institute of Electro-Optical Engineering, Tatung University, Taipei 10452, Taiwan (China); Wu, Chih-Hung [Institute of Nuclear Energy Research, Longtan 32546, Taiwan (China); Shen, Ji-Lin [Department of Physics, Chung Yuan Christian University, Chung-Li 32023, Taiwan (China); Center for Nano-Technology, Chung Yuan Christian University, Chung-Li 32023, Taiwan (China)

    2013-04-01

    This work demonstrates the improvement of the molecular beam epitaxial growth of zinc-blende CdSe on (0 0 1) GaAs substrate with a large lattice mismatch by introducing a small amount of Te atoms. Exposing the growing surface to Te atoms changes the reflection high-energy electron diffraction pattern from spotty to streaky together with (2 × 1) surface reconstruction, and greatly reduces the full width at half maximum of the X-ray rocking curve and increases the integral intensity of room-temperature photoluminescence by a factor of about nine.

  8. Effects of Ga-flux on Optical Properties and Morphology of GaN Grown via Molecular Beam Epitaxy

    Institute of Scientific and Technical Information of China (English)

    YANG Jing-hai; GONG Jie; FAN Hou-gang; YANG Li-li; ZHANG Yong-jun; Zseb(o)k O.; CHEN Gang

    2004-01-01

    A series of GaN layers was grown on sapphire (0001) substrates under various growth conditions by means of the molecular beam epitaxy(MBE) method, the optical characteristics and surface morphologies of the samples were studied. The results show that the line width of the GaN emission gradually decreases and the peak shifts under the Ga-rich condition by increasing the Ga-flux on keeping all other growth conditions unchanged. It has been also found that the resulted morphology is directly related to the Ga-flux.

  9. Transmission electron microscopy study of CdTe(111) grown on GaAs(100) by molecular-beam epitaxy

    Energy Technology Data Exchange (ETDEWEB)

    Reno, J.L.; Carr, M.J.; Gourley, P.L. (Sandia National Laboratory, Albuquerque, New Mexico 87185 (USA))

    1990-05-01

    We have used transmission electron microscopy to investigate CdTe(111) grown on GaAs(100) by molecular-beam epitaxy. The loop structure previously observed by photoluminescence microscopy has been identified as the boundary between twinned microcrystallites that extend from the CdTe/GaAs interface to the CdTe surface. When viewed along the growth axis, these boundaries between the columnar twins appear as loops and segments. Surface roughness of the GaAs substrate contributes to the initial growth of twinned material. This leads to competitive growth between the twins and the creation of the observed columnar twins.

  10. Stimulated emission from a CdTe/HgCdTe separate confinement heterostructure grown by molecular beam epitaxy

    Energy Technology Data Exchange (ETDEWEB)

    Mahavadi, K.K.; Bleuse, J.; Sivananthan, S.; Faurie, J.P. (Microphysics Laboratory, Department of Physics, University of Illinois at Chicago, Chicago, Illinois 60680 (USA))

    1990-05-21

    We present the results of low-temperature photoluminescence and stimulated emission experiments performed on a CdTe/Hg{sub 0.45}Cd{sub 0.55}Te/Hg{sub 0.67}Cd{sub 0.33}Te multiquantum well separate confinement heterostructure grown by molecular beam epitaxy. The photoluminescence results suggest that because of the growth conditions, there is a strong interdiffusion in the multiquantum well region. Pulsed stimulated emission was observed from this structure up to 77 K.

  11. Molecular beam epitaxy and characterization of thin Bi2Se3 films on Al2O3 (110)

    Science.gov (United States)

    Tabor, Phillip; Keenan, Cameron; Urazhdin, Sergei; Lederman, David

    2011-07-01

    The structural and electronic properties of thin Bi2Se3 films grown on Al2O3 (110) by molecular beam epitaxy are investigated. The epitaxial films grow in the Frank-van der Merwe mode and are c-axis oriented. They exhibit the highest crystallinity, the lowest carrier concentration, and optimal stoichiometry at a substrate temperature of 200 °C determined by the balance between surface kinetics and desorption of Se. The crystallinity of the films improves with increasing Se/Bi flux ratio. Our results enable studies of thin topological insulator films on inert, non-conducting substrates that allow optical access to both film surfaces.

  12. (GaMn)As: GaAs-based III?V diluted magnetic semiconductors grown by molecular beam epitaxy

    Science.gov (United States)

    Hayashi, T.; Tanaka, M.; Nishinaga, T.; Shimada, H.; Tsuchiya, H.; Otuka, Y.

    1997-05-01

    We have grown novel III-V diluted magnetic semiconductors, (Ga 1 - xMn x)As, on GaAs substrates by low-temperature molecular beam epitaxy using strong nonequilibrium growth conditions. When the Mn concentration x is relatively low (≲0.08), homogeneous alloy semiconductors, GaMnAs, are grown with zincblende structure and slightly larger lattice constants than that of GaAs, whereas inhomogeneous structures with zincblende GaMnAs (or GaAs) plus hexagonal MnAs are formed when x is relatively high. Magnetization measurements indicate that the homogeneous GaMnAs films have ferromagnetic ordering at low temperature.

  13. Identification of Intermediates in Pyridine Pyrolysis with Molecular-beam Mass Spectrometry and Tunable Synchrotron VUV Photoionization

    Institute of Scientific and Technical Information of China (English)

    Xin Hong; Taichang Zhang; Lidong Zhang; Fei Qi

    2009-01-01

    The pyrolysis of pyridine (5.26% pyridine in argon) was performed with tunable synchrotron vacuum ultraviolet photoionization and molecular-beam mass spectrometry technique at the temperature range of 1255-1765 K at 267 Pa. About 20 products and intermediates, containing major species H2, HCN, C2H2, C5H3N, C4H2, and C3H3N, were identified by near-threshold measurements of photoionization mass spectra and their mole fractions vs.temperatures were estimated. The major reaction pathways are analyzed based on the experimental observations.

  14. Direct growth of hexagonal InN films on 6H-SiC by radio-frequency metal-organic molecular-beam epitaxy

    International Nuclear Information System (INIS)

    Wurtzite InN films were prepared on a 6H-SiC substrate by a self-designed plasma-assisted metal-organic molecular-beam epitaxy system without a buffer layer. In this article, the authors investigate the structural and optical properties of InN films grown on a 6H-SiC substrate. The crystallinity and microstructure of the thin film were further characterized by x-ray diffraction (XRD), field-emission scanning-electron microscopy, and transmission-electron microscopy. Electrical and optical properties were evaluated by Hall and photoluminescence (PL) measurements. XRD results indicate that InN film grown at 500 deg. C is epitaxially grown along the c-axis orientation. The two-dimensional growth mode is clearly shown in scanning-electron microscope images. Room-temperature PL spectra show that the emission peak is located at ∼0.83 eV due to the Burstein-Moss effect. In addition, the crystalline InN samples crack and peel away from the substrate at elevated growth temperature. This phenomenon may be attributed to lattice mismatch and grain coalescence while increasing the growth temperature. The narrow window of the growth temperature plays an important role in engineering the InN epitaxial growth.

  15. Morphological and microstructural stability of N-polar InAlN thin films grown on free-standing GaN substrates by molecular beam epitaxy

    Energy Technology Data Exchange (ETDEWEB)

    Hardy, Matthew T., E-mail: matthew.hardy.ctr@nrl.navy.mil; Storm, David F.; Downey, Brian P.; Katzer, D. Scott; Meyer, David J. [Electronics Science and Technology Division, Naval Research Laboratory, 4555 Overlook Avenue SW, Washington DC 20375 (United States); McConkie, Thomas O.; Smith, David J. [Department of Physics, Arizona State University, Tempe, Arizona 85287-1504 (United States); Nepal, Neeraj [Sotera Defense Solutions, 2200 Defense Hwy Suite 405, Crofton, Maryland 21114 (United States)

    2016-03-15

    The sensitivity of the surface morphology and microstructure of N-polar-oriented InAlN to variations in composition, temperature, and layer thickness for thin films grown by plasma-assisted molecular beam epitaxy (PAMBE) has been investigated. Lateral compositional inhomogeneity is present in N-rich InAlN films grown at low temperature, and phase segregation is exacerbated with increasing InN fraction. A smooth, step-flow surface morphology and elimination of compositional inhomogeneity can be achieved at a growth temperature 50 °C above the onset of In evaporation (650 °C). A GaN/AlN/GaN/200-nm InAlN heterostructure had a sheet charge density of 1.7 × 10{sup 13 }cm{sup −2} and no degradation in mobility (1760 cm{sup 2}/V s) relative to 15-nm-thick InAlN layers. Demonstration of thick-barrier high-electron-mobility transistors with good direct-current characteristics shows that device quality, thick InAlN layers can be successfully grown by PAMBE.

  16. Structure and optical properties of ternary alloy BeZnO and quaternary alloy BeMgZnO films growth by molecular beam epitaxy

    Energy Technology Data Exchange (ETDEWEB)

    Su, Longxing, E-mail: sulx@mail2.sysu.edu.cn [State Key Laboratory of Optoelectronic Materials and Technologies, School of Physics and Engineering, Sun Yet-Sen University, Guangzhou 510275 (China); Zhu, Yuan, E-mail: zhuy9@mail.sysu.edu.cn [State Key Laboratory of Optoelectronic Materials and Technologies, School of Physics and Engineering, Sun Yet-Sen University, Guangzhou 510275 (China); Physics Department, Hong Kong University of Science and Technology, Clear Water Bay, Kowloon (Hong Kong); Zhang, Quanlin; Chen, Mingming; Wu, Tianzhun; Gui, Xuchun [State Key Laboratory of Optoelectronic Materials and Technologies, School of Physics and Engineering, Sun Yet-Sen University, Guangzhou 510275 (China); Pan, Bicai [Department of Physics and Hefei National Laboratory for Physical Sciences at Microscale, University of Science and Technology of China, Hefei, Anhui 230026 (China); Xiang, Rong [State Key Laboratory of Optoelectronic Materials and Technologies, School of Physics and Engineering, Sun Yet-Sen University, Guangzhou 510275 (China); Tang, Zikang, E-mail: phzktang@ust.hk [State Key Laboratory of Optoelectronic Materials and Technologies, School of Physics and Engineering, Sun Yet-Sen University, Guangzhou 510275 (China); Physics Department, Hong Kong University of Science and Technology, Clear Water Bay, Kowloon (Hong Kong)

    2013-06-01

    Ternary alloy BeZnO and quaternary alloy BeMgZnO films were prepared on sapphire (0 0 1) substrate by radio-frequency plasma-assisted molecular beam epitaxy (RF-PAMBE). Based on X-ray diffraction (XRD) analysis, no phase segregation is observed for all the alloys. However, Be{sub x}Zn{sub 1−x}O alloys exhibit a constantly worse crystal quality than Be{sub x}Mg{sub y}Zn{sub 1−x−y}O alloys at the similar incorporation contents (i.e. x in BeZnO approximately equals to x + y in BeMgZnO). Optical transmittance spectra were recorded to determine the energy band gap of the films. BeMgZnO was revealed more effective in widening the band gap. Finally, BeZnO and BeMgZnO based MSM structure UV detectors were fabricated. BeMgZnO alloys with better crystal quality showed a favorable optical response and the cutoff wavelength shifted continuously to deep ultraviolet range, while BeZnO based detectors were found no response. This is the first report on BeMgZnO based UV detector, which is a meaningful step forward to the real application.

  17. Self-catalyzed growth of dilute nitride GaAs/GaAsSbN/GaAs core-shell nanowires by molecular beam epitaxy

    Energy Technology Data Exchange (ETDEWEB)

    Kasanaboina, Pavan Kumar [Department of Electrical and Computer Engineering, North Carolina A& T State University, Greensboro, North Carolina 27411 (United States); Ahmad, Estiak [Nanoengineering, Joint School of Nanoscience and Nanoengineering, NCA& T State University, Greensboro, North Carolina 27401 (United States); Li, Jia; Iyer, Shanthi [Department of Electrical and Computer Engineering, North Carolina A& T State University, Greensboro, North Carolina 27411 (United States); Nanoengineering, Joint School of Nanoscience and Nanoengineering, NCA& T State University, Greensboro, North Carolina 27401 (United States); Reynolds, C. Lewis; Liu, Yang [Department of Materials Science and Engineering, North Carolina State University, Raleigh, North Carolina 27695 (United States)

    2015-09-07

    Bandgap tuning up to 1.3 μm in GaAsSb based nanowires by incorporation of dilute amount of N is reported. Highly vertical GaAs/GaAsSbN/GaAs core-shell configured nanowires were grown for different N contents on Si (111) substrates using plasma assisted molecular beam epitaxy. X-ray diffraction analysis revealed close lattice matching of GaAsSbN with GaAs. Micro-photoluminescence (μ-PL) revealed red shift as well as broadening of the spectra attesting to N incorporation in the nanowires. Replication of the 4K PL spectra for several different single nanowires compared to the corresponding nanowire array suggests good compositional homogeneity amongst the nanowires. A large red shift of the Raman spectrum and associated symmetric line shape in these nanowires have been attributed to phonon localization at point defects. Transmission electron microscopy reveals the dominance of stacking faults and twins in these nanowires. The lower strain present in these dilute nitride nanowires, as opposed to GaAsSb nanowires having the same PL emission wavelength, and the observation of room temperature PL demonstrate the advantage of the dilute nitride system offers in the nanowire configuration, providing a pathway for realizing nanoscale optoelectronic devices in the telecommunication wavelength region.

  18. Visible photoluminescence and room temperature ferromagnetism in high In-content InGaN:Yb nanorods grown by molecular beam epitaxy

    Energy Technology Data Exchange (ETDEWEB)

    Dasari, K.; Palai, R., E-mail: r.palai@upr.edu [Department of Physics, University of Puerto Rico, San Juan, Puerto Rico 00936 (United States); Wang, J.; Jadwisienczak, W. M. [School of Electrical Engineering and Computer Science, Ohio University, Athens, Ohio 45701-2979 (United States); Guinel, M. J.-F. [Department of Physics, University of Puerto Rico, San Juan, Puerto Rico 00936 (United States); Department of Chemistry, University of Puerto Rico, San Juan, Puerto Rico 00936 (United States); Huhtinen, H. [Wihuri Physical Laboratory, Department of Physics and Astronomy, University of Turku, Turku FI-20014 (Finland); Mundle, R.; Pradhan, A. K. [Department of Engineering, Norfolk State University, 700 Park Avenue, Norfolk, Virginia 23504 (United States)

    2015-09-28

    We report the growth of high indium content InGaN:Yb nanorods grown on c-plane sapphire (0001) substrates using plasma assisted molecular beam epitaxy. The in situ reflection high energy electron diffraction patterns recorded during and after the growth revealed crystalline nature of the nanorods. The nanorods were examined using electron microscopy and atomic force microscopy. The photoluminescence studies of the nanorods showed the visible emissions. The In composition was calculated from x-ray diffraction, x-ray photoelectron spectroscopy, and the photoluminescence spectroscopy. The In-concentration was obtained from photoluminescence using modified Vegard's law and found to be around 37% for InGaN and 38% for Yb (5 ± 1%)-doped InGaN with a bowing parameter b = 1.01 eV. The Yb-doped InGaN showed significant enhancement in photoluminescence properties compared to the undoped InGaN. The Yb-doped InGaN nanorods demonstrated the shifting of the photoluminescence band at room temperature, reducing luminescence amplitude temperature dependent fluctuation, and significant narrowing of excitonic emission band as compared to the undoped InGaN. The magnetic properties measured by superconducting quantum interference devices reveals room temperature ferromagnetism, which can be explained by the double exchange mechanism and magnetostriction.

  19. Self-catalyzed growth of dilute nitride GaAs/GaAsSbN/GaAs core-shell nanowires by molecular beam epitaxy

    International Nuclear Information System (INIS)

    Bandgap tuning up to 1.3 μm in GaAsSb based nanowires by incorporation of dilute amount of N is reported. Highly vertical GaAs/GaAsSbN/GaAs core-shell configured nanowires were grown for different N contents on Si (111) substrates using plasma assisted molecular beam epitaxy. X-ray diffraction analysis revealed close lattice matching of GaAsSbN with GaAs. Micro-photoluminescence (μ-PL) revealed red shift as well as broadening of the spectra attesting to N incorporation in the nanowires. Replication of the 4K PL spectra for several different single nanowires compared to the corresponding nanowire array suggests good compositional homogeneity amongst the nanowires. A large red shift of the Raman spectrum and associated symmetric line shape in these nanowires have been attributed to phonon localization at point defects. Transmission electron microscopy reveals the dominance of stacking faults and twins in these nanowires. The lower strain present in these dilute nitride nanowires, as opposed to GaAsSb nanowires having the same PL emission wavelength, and the observation of room temperature PL demonstrate the advantage of the dilute nitride system offers in the nanowire configuration, providing a pathway for realizing nanoscale optoelectronic devices in the telecommunication wavelength region

  20. Transport and optical properties of c-axis oriented wedge shaped GaN nanowall network grown by molecular beam epitaxy

    Science.gov (United States)

    Bhasker, H. P.; Thakur, Varun; Kesaria, Manoj; Shivaprasad, S. M.; Dhar, S.

    2014-02-01

    The transport and optical properties of wedge-shaped nanowall network of GaN grown spontaneously on cplane sapphire substrate by Plasma-Assisted Molecular Beam Epitaxy (PAMBE) show interesting behavior. The electron mobility at room temperature in these samples is found to be orders of magnitude higher than that of a continuous film. Our study reveals a strong correlation between the mobility and the band gap in these nanowall network samples. However, it is seen that when the thickness of the tips of the walls increases to an extent such that more than 70% of the film area is covered, it behaves close to a flat sample. In the sample with lower surface coverage (≈40% and ≈60%), it was observed that the conductivity, mobility as well as the band gap increase with the decrease in the average tip width of the walls. Photoluminescence (PL) experiments show a strong and broad band edge emission with a large (as high as ≈ 90 meV) blue shift, compared to that of a continuous film, suggesting a confinement of carriers on the top edges of the nanowalls. The PL peak width remains wide at all temperatures suggesting the existence of a high density of tail states at the band edge, which is further supported by the photoconductivity result. The high conductivity and mobility observed in these samples is believed to be due to a "dissipation less" transport of carriers, which are localized at the top edges (edge states) of the nanowalls.

  1. Enhanced Etching, Surface Damage Recovery, and Submicron Patterning of Hybrid Perovskites using a Chemically Gas-Assisted Focused-Ion Beam for Subwavelength Grating Photonic Applications.

    Science.gov (United States)

    Alias, Mohd S; Yang, Yang; Ng, Tien K; Dursun, Ibrahim; Shi, Dong; Saidaminov, Makhsud I; Priante, Davide; Bakr, Osman M; Ooi, Boon S

    2016-01-01

    The high optical gain and absorption of organic-inorganic hybrid perovskites have attracted attention for photonic device applications. However, owing to the sensitivity of organic moieties to solvents and temperature, device processing is challenging, particularly for patterning. Here, we report the direct patterning of perovskites using chemically gas-assisted focused-ion beam (GAFIB) etching with XeF2 and I2 precursors. We demonstrate etching enhancement in addition to controllability and marginal surface damage compared to focused-ion beam (FIB) etching without precursors. Utilizing the GAFIB etching, we fabricated a uniform and periodic submicron perovskite subwavelength grating (SWG) absorber with broadband absorption and nanoscale precision. Our results demonstrate the use of FIB as a submicron patterning tool and a means of providing surface treatment (after FIB patterning to minimize optical loss) for perovskite photonic nanostructures. The SWG absorber can be patterned on perovskite solar cells to enhance the device efficiency through increasing light trapping and absorption.

  2. Enhanced Etching, Surface Damage Recovery, and Submicron Patterning of Hybrid Perovskites using a Chemically Gas-Assisted Focused-Ion Beam for Subwavelength Grating Photonic Applications

    KAUST Repository

    Alias, Mohd Sharizal Bin

    2015-12-22

    The high optical gain and absorption of organic–inorganic hybrid perovskites have attracted attention for photonic device applications. However, owing to the sensitivity of organic moieties to solvents and temperature, device processing is challenging, particularly for patterning. Here, we report the direct patterning of perovskites using chemically gas-assisted focused-ion beam (GAFIB) etching with XeF2 and I2 precursors. We demonstrate etching enhancement in addition to controllability and marginal surface damage compared to focused-ion beam (FIB) etching without precursors. Utilizing the GAFIB etching, we fabricated a uniform and periodic submicron perovskite subwavelength grating (SWG) absorber with broadband absorption and nanoscale precision. Our results demonstrate the use of FIB as a submicron patterning tool and a means of providing surface treatment (after FIB patterning to minimize optical loss) for perovskite photonic nanostructures. The SWG absorber can be patterned on perovskite solar cells to enhance the device efficiency through increasing light trapping and absorption.

  3. Electronic transport in fullerene C20 bridge assisted by molecular vibrations.

    Science.gov (United States)

    Yamamoto, Takahiro; Watanabe, Kazuyuki; Watanabe, Satoshi

    2005-08-01

    The effect of molecular vibrations on electronic transport is investigated with the smallest fullerene C20 bridge, utilizing the Keldysh nonequilibrium Green's function techniques combined with the tight-binding molecular-dynamics method. Large discontinuous steps appear in the differential conductance when the applied bias voltage matches particular vibrational energies. The magnitude of the step is found to vary considerably with the vibrational mode and to depend on the local electronic states besides the strength of electron-vibration coupling. On the basis of this finding, a novel way to control the molecular motion by adjusting the gate voltage is proposed.

  4. Structural and Magnetic Phase Transitions in Manganese Arsenide Thin-Films Grown by Molecular Beam Epitaxy

    Science.gov (United States)

    Jaeckel, Felix Till

    Phase transitions play an important role in many fields of physics and engineering, and their study in bulk materials has a long tradition. Many of the experimental techniques involve measurements of thermodynamically extensive parameters. With the increasing technological importance of thin-film technology there is a pressing need to find new ways to study phase transitions at smaller length-scales, where the traditional methods are insufficient. In this regard, the phase transitions observed in thin-films of MnAs present interesting challenges. As a ferromagnetic material that can be grown epitaxially on a variety of technologically important substrates, MnAs is an interesting material for spintronics applications. In the bulk, the first order transition from the low temperature ferromagnetic alpha-phase to the beta-phase occurs at 313 K. The magnetic state of the beta-phase has remained controversial. A second order transition to the paramagnetic gamma-phase takes place at 398 K. In thin-films, the anisotropic strain imposed by the substrate leads to the interesting phenomenon of coexistence of alpha- and beta-phases in a regular array of stripes over an extended temperature range. In this dissertation these phase transitions are studied in films grown by molecular beam epitaxy on GaAs (001). The films are confirmed to be of high structural quality and almost purely in the A0 orientation. A diverse set of experimental techniques, germane to thin-film technology, is used to probe the properties of the film: Temperature-dependent X-ray diffraction and atomic-force microscopy (AFM), as well as magnetotransport give insights into the structural properties, while the anomalous Hall effect is used as a probe of magnetization during the phase transition. In addition, reflectance difference spectroscopy (RDS) is used as a sensitive probe of electronic structure. Inductively coupled plasma etching with BCl3 is demonstrated to be effective for patterning MnAs. We show

  5. Intensities and cross-sections of Ar clusters in a molecular beam, ch. 3

    International Nuclear Information System (INIS)

    Ar-cluster beams were produced by supersonic expansion under various source conditions. The experimental intensities have been scaled such that universal curves are obtained, up to moderate source pressures. The ratio of dimer/monomer cross-sections has been determined. (Auth.)

  6. Ab initio molecular orbital characterization of dimethyl group-III azides as sources for photolytic production of free radical beams

    International Nuclear Information System (INIS)

    Use of a beam of biradicaloid such as dialkyl group-III nitrene produced by the method of photodissociation of energetic compound beams (PDECB) is expected to be advantageous to the low-temperature thin-film growth of stoichiometric group-III nitride. Through the clarification of fundamental processes involved in pyrolysis as well as photolysis of dimethylgallium azide [(CH3)2GaN3], dimethylaluminum azide [(CH3)2AlN3], and dimethylboron azide [(CH3)2BN3] based on post-self-consistent field ab initio molecular orbital methods, we discuss the suitability of these possible source compounds for the production of beams of dimethylgalliumnitrene [(CH3)2GaN], dimethylaluminumnitrene [(CH3)2AlN], and dimethylboronnitrene [(CH3)2BN] by the PDECB method. The theoretical results suggested that (CH3)2GaN3 is a promising PDECB source material in that this molecule possesses the nature of unimolecular metastable dye

  7. STM tip-assisted engineering of molecular nanostructures: PTCDA islands on Ge(001):H surfaces

    OpenAIRE

    Ahmad Zebari, Amir A; Marek Kolmer; Prauzner-Bechcicki, Jakub S.

    2013-01-01

    Islands composed of perylene-3,4,9,10-tetracarboxylic dianhydride (PTCDA) molecules are grown on a hydrogen passivated Ge(001):H surface. The islands are studied with room temperature scanning tunneling microscopy and spectroscopy. The spontaneous and tip-induced formation of the top-most layer of the island is presented. Assistance of the scanning probe seems to be one of the factors that facilitate and speed the process of formation of the top-most layer.

  8. STM tip-assisted engineering of molecular nanostructures: PTCDA islands on Ge(001:H surfaces

    Directory of Open Access Journals (Sweden)

    Amir A. Ahmad Zebari

    2013-12-01

    Full Text Available Islands composed of perylene-3,4,9,10-tetracarboxylic dianhydride (PTCDA molecules are grown on a hydrogen passivated Ge(001:H surface. The islands are studied with room temperature scanning tunneling microscopy and spectroscopy. The spontaneous and tip-induced formation of the top-most layer of the island is presented. Assistance of the scanning probe seems to be one of the factors that facilitate and speed the process of formation of the top-most layer.

  9. STM tip-assisted engineering of molecular nanostructures: PTCDA islands on Ge(001):H surfaces.

    Science.gov (United States)

    Ahmad Zebari, Amir A; Kolmer, Marek; Prauzner-Bechcicki, Jakub S

    2013-01-01

    Islands composed of perylene-3,4,9,10-tetracarboxylic dianhydride (PTCDA) molecules are grown on a hydrogen passivated Ge(001):H surface. The islands are studied with room temperature scanning tunneling microscopy and spectroscopy. The spontaneous and tip-induced formation of the top-most layer of the island is presented. Assistance of the scanning probe seems to be one of the factors that facilitate and speed the process of formation of the top-most layer. PMID:24367762

  10. Very high temperature chemical vapor deposition of new carbon thin films using organic semiconductor molecular beam sources

    Energy Technology Data Exchange (ETDEWEB)

    Noguchi, Takuya [Department of Chemistry, University of Tokyo, 7-3-1 Hongo, Bunkyo-ku, Tokyo, 113-0033 (Japan); Shimada, Toshihiro, E-mail: shimada@chem.s.u-tokyo.ac.j [Department of Chemistry, University of Tokyo, 7-3-1 Hongo, Bunkyo-ku, Tokyo, 113-0033 (Japan); Hanzawa, Akinori; Hasegawa, Tetsuya [Department of Chemistry, University of Tokyo, 7-3-1 Hongo, Bunkyo-ku, Tokyo, 113-0033 (Japan)

    2009-11-30

    We carried out the preparation and characterization of new carbon films deposited using an organic molecular beam deposition apparatus with very high substrate temperature (from room temperature to 2670 K), which we newly developed. When we irradiated molecular beam of organic semiconductor perylene tetracarboxylic acid dianhydride (PTCDA) on Y{sub 0.07}Zr{sub 0.93}O{sub 2} (111) at 2170 K, a new carbon material was formed via decomposition and fusing of the molecules. The films were characterized with an atomic force microscope (AFM), Raman spectroscopy, X-ray diffraction (XRD) and X-ray photoelectron spectroscopy (XPS). Zirconium carbide (ZrC) films were identified beneath the topmost carbon layer by XRD and XPS analyses, which results from chemical reactions of the substrate and the molecules. Partially graphitized aromatic rings of PTCDA were observed from Raman spectroscopy. The present technique - very high temperature chemical vapor deposition using organic semiconductor sources - will be useful to study a vast unexplored field of covalent carbon solids.

  11. Molecular beam studies of unimolecular and bimolecular chemical reaction dynamics using VUV synchrotron radiation as a product probe

    Energy Technology Data Exchange (ETDEWEB)

    Blank, D.A.

    1997-08-01

    This dissertation describes the use of a new molecular beam apparatus designed to use tunable VUV synchrotron radiation for photoionization of the products from scattering experiments. The apparatus was built at the recently constructed Advanced Light Source at Lawrence Berkeley National Laboratory, a third generation 1-2 GeV synchrotron radiation source. The new apparatus is applied to investigations of the dynamics of unimolecular reactions, photodissociation experiments, and bimolecular reactions, crossed molecular beam experiments. The first chapter describes the new apparatus and the VUV radiation used for photoionization. This is followed by a number of examples of the many advantages provided by using VUV photoionization in comparison with the traditional technique of electron bombardment ionization. At the end of the chapter there is a discussion of the data analysis employed in these scattering experiments. The remaining four chapters are complete investigations of the dynamics of four chemical systems using the new apparatus and provide numerous additional examples of the advantages provided by VUV photoionizaiton of the products. Chapters 2-4 are photofragment translational spectroscopy studies of the photodissociation dynamics of dimethyl sulfoxide, acrylonitrile, and vinyl chloride following absorption at 193 mn. All of these systems have multiple dissociation channels and provide good examples of the ability of the new apparatus to unravel the complex UV photodissociation dynamics that can arise in small polyatomic molecules.

  12. Historical Account And Branching To Rarefied Gas Dynamics Of Atomic and Molecular Beams : A Continuing And Fascinating Odyssey Commemorated By Nobel Prizes Awarded To 23 Laureates In Physics And Chemistry

    Science.gov (United States)

    Campargue, Roger

    2005-05-01

    This Historical Account derived in part from D. R. Herschbach was presented as an opening lecture of the Molecular Beam Session organized at the 24th International Symposium on Rarefied Gas Dynamics held in Bari, Italy, in July 2004. The emphasis is on the impressive results due to the molecular beam techniques in the last century. The first section summarizes the historical beam experiments performed by 14 Nobel Prize laureates having used the thermally effusive sources to establish the basic principles of Modern Physics. The second section is on the branching of Molecular Beams to Rarefied Gas Dynamics having permitted to investigate the physics of supersonic free jets and transform the molecular beam techniques. Finally, the last section relates the spectacular molecular beam experiments in helium free jet ultracooling, molecular spectroscopy, chemical reaction dynamics, clustering and modification of low density matter, and biomolecule mass spectrometry, rewarded by nine Nobel Prizes in Chemistry from 1986 to 2002.

  13. Air flow-assisted ionization imaging mass spectrometry method for easy whole-body molecular imaging under ambient conditions.

    Science.gov (United States)

    Luo, Zhigang; He, Jiuming; Chen, Yi; He, Jingjing; Gong, Tao; Tang, Fei; Wang, Xiaohao; Zhang, Ruiping; Huang, Lan; Zhang, Lianfeng; Lv, Haining; Ma, Shuanggang; Fu, Zhaodi; Chen, Xiaoguang; Yu, Shishan; Abliz, Zeper

    2013-03-01

    Whole-body molecular imaging is able to directly map spatial distribution of molecules and monitor its biotransformation in intact biological tissue sections. Imaging mass spectrometry (IMS), a label-free molecular imaging method, can be used to image multiple molecules in a single measurement with high specificity. Herein, a novel easy-to-implement, whole-body IMS method was developed with air flow-assisted ionization in a desorption electrospray ionization mode. The developed IMS method can effectively image molecules in a large whole-body section in open air without sample pretreatment, such as chemical labeling, section division, or matrix deposition. Moreover, the signal levels were improved, and the spatial assignment errors were eliminated; thus, high-quality whole-body images were obtained. With this novel IMS method, in situ mapping analysis of molecules was performed in adult rat sections with picomolar sensitivity under ambient conditions, and the dynamic information of molecule distribution and its biotransformation was provided to uncover molecular events at the whole-animal level. A global view of the differential distribution of an anticancer agent and its metabolites was simultaneously acquired in whole-body rat and model mouse bearing neuroglioma along the administration time. The obtained drug distribution provided rich information for identifying the targeted organs and predicting possible tumor spectrum, pharmacological activity, and potential toxicity of drug candidates.

  14. Photon-assisted electronic and spin transport in a junction containing precessing molecular spin

    Science.gov (United States)

    Filipović, Milena; Belzig, Wolfgang

    2016-02-01

    We study the ac charge and -spin transport through an orbital of a magnetic molecule with spin precessing in a constant magnetic field. We assume that the source and drain contacts have time-dependent chemical potentials. We employ the Keldysh nonequilibrium Green's functions method to calculate the spin and charge currents to linear order in the time-dependent potentials. The molecular and electronic spins are coupled via exchange interaction. The time-dependent molecular spin drives inelastic transitions between the molecular quasienergy levels, resulting in a rich structure in the transport characteristics. The time-dependent voltages allow us to reveal the internal precession time scale (the Larmor frequency) by a dc conductance measurement if the ac frequency matches the Larmor frequency. In the low-ac-frequency limit the junction resembles a classical electric circuit. Furthermore, we show that the setup can be used to generate dc-spin currents, which are controlled by the molecular magnetization direction and the relative phases between the Larmor precession and the ac voltage.

  15. Molecular depth profiling of organic photovoltaic heterojunction layers by ToF-SIMS: comparative evaluation of three sputtering beams.

    Science.gov (United States)

    Mouhib, T; Poleunis, C; Wehbe, N; Michels, J J; Galagan, Y; Houssiau, L; Bertrand, P; Delcorte, A

    2013-11-21

    With the recent developments in secondary ion mass spectrometry (SIMS), it is now possible to obtain molecular depth profiles and 3D molecular images of organic thin films, i.e. SIMS depth profiles where the molecular information of the mass spectrum is retained through the sputtering of the sample. Several approaches have been proposed for "damageless" profiling, including the sputtering with SF5(+) and C60(+) clusters, low energy Cs(+) ions and, more recently, large noble gas clusters (Ar500-5000(+)). In this article, we evaluate the merits of these different approaches for the in depth analysis of organic photovoltaic heterojunctions involving poly(3-hexylthiophene) (P3HT) as the electron donor and [6,6]-phenyl C61 butyric acid methyl ester (PCBM) as the acceptor. It is demonstrated that the use of 30 keV C60(3+) and 500 eV Cs(+) (500 eV per atom) leads to strong artifacts for layers in which the fullerene derivative PCBM is involved, related to crosslinking and topography development. In comparison, the profiles obtained using 10 keV Ar1700(+) (∼6 eV per atom) do not indicate any sign of artifacts and reveal fine compositional details in the blends. However, increasing the energy of the Ar cluster beam beyond that value leads to irreversible damage and failure of the molecular depth profiling. The profile qualities, apparent interface widths and sputtering yields are analyzed in detail. On the grounds of these experiments and recent molecular dynamics simulations, the discussion addresses the issues of damage and crater formation induced by the sputtering and the analysis ions in such radiation-sensitive materials, and their effects on the profile quality and the depth resolution. Solutions are proposed to optimize the depth resolution using either large Ar clusters or low energy cesium projectiles for sputtering and/or analysis.

  16. Removal of Nitrogen Oxides in Diesel Engine Exhaust by Plasma Assisted Molecular Sieves

    Institute of Scientific and Technical Information of China (English)

    2002-01-01

    This paper reports the studies conducted on removal of oxides of nitrogen (NOx) from diesel engine exhaust using electrical discharge plasma combined with adsorbing materials such as molecular sieves. This study is being reported for the first time. The exhaust is taken from a diesel engine of 6 kW under no load conditions. The characteristic behavior of a pulse energized dielectric barrier discharge reactor in the diesel exhaust treatment is reported. The NOx removal was not significant (36%) when the reactor without any packing was used. However, when the reactor was packed with molecular sieves (MS -3A, -4A & -13X), the NOx removal efficiency was increased to 78% particularly at a temperature of 200 o C. The studies were conducted at different temperatures and the results were discussed.

  17. Anisotropic In-Plane Conductivity and Dichroic Gold Plasmon Resonance in Plasma-Assisted ITO Thin Films e-Beam-Evaporated at Oblique Angles.

    Science.gov (United States)

    Parra-Barranco, Julián; García-García, Francisco J; Rico, Víctor; Borrás, Ana; López-Santos, Carmen; Frutos, Fabián; Barranco, Angel; González-Elipe, Agustín R

    2015-05-27

    ITO thin films have been prepared by electron beam evaporation at oblique angles (OA), directly and while assisting their growth with a downstream plasma. The films microstructure, characterized by scanning electron microscopy, atomic force microscopy, and glancing incidence small-angle X-ray scattering, consisted of tilted and separated nanostructures. In the plasma assisted films, the tilting angle decreased and the nanocolumns became associated in the form of bundles along the direction perpendicular to the flux of evaporated material. The annealed films presented different in-depth and sheet resistivity as confirmed by scanning conductivity measurements taken for the individual nanocolumns. In addition, for the plasma-assisted thin films, two different sheet resistance values were determined by measuring along the nanocolumn bundles or the perpendicular to it. This in-plane anisotropy induces the electrochemical deposition of elongated gold nanostructures. The obtained Au-ITO composite thin films were characterized by anisotropic plasmon resonance absorption and a dichroic behavior when examined with linearly polarized light. PMID:25938593

  18. Reduced Density Matrix Approach to the Laser-Assisted Electron Transport in Molecular Wires

    OpenAIRE

    Welack, Sven

    2006-01-01

    The electron transport through a molecular wire under the influence of an external laser field is studied using a reduced density matrix formalism. The full system is partitioned into the relevant part, i.e. the wire, electron reservoirs and a phonon bath. An earlier second-order perturbation theory approach of Meier and Tannor for bosonic environments which employs a numerical decomposition of the spectral density is used to describe the coupling to the phonon bath and is ex...

  19. Chaperone-Assisted Formation of Cucurbit[8]uril-Based Molecular Porous Materials with One-Dimensional Channel Structure.

    Science.gov (United States)

    Zhu, Wei; Wang, Chen; Lan, Yue; Li, Jian; Wang, Hui; Gao, Ning; Ji, Jingwei; Li, Guangtao

    2016-09-01

    Exploiting "chaperone molecule" to navigate the successful assembly energy landscapes has been extensively used in biological systems, whereas in artifical supramolecular systems the "chaperone-assisted" assembly strategy to be used for the synthesis of materials with novel structures or the structures to be hardly prepared by "conventional" methods are still far from realizing the potential functions. In this work, we present a new example of small organic molecule acting as "chaperone molecule" in the facile formation of organic molecular porous materials. This porous material is composed of pure cucurbit[8]uril (CB[8]) macrocycle and possesses a honeycomb-like structure with an isolated and relatively large one-dimensional (1D) nanochannel. Moreover, it has good chemical and thermal stability, and shows a good adsorption capability for large molecule loading. Importantly, with the assistance of chaperone molecules, pure CB[8] could also be recycled even from a complex aqueous solution, demonstrating a powerful purification method of CB[8] from complex systems. PMID:27539793

  20. Structural and optical properties of self-catalytic GaAs:Mn nanowires grown by molecular beam epitaxy on silicon substrates

    DEFF Research Database (Denmark)

    Gas, Katarzyna; Sadowski, Janusz; Kasama, Takeshi;

    2013-01-01

    Mn-doped GaAs nanowires were grown in the self-catalytic growth mode on the oxidized Si(100) surface by molecular beam epitaxy and characterized by scanning and transmission electron microscopy, Raman scattering, photoluminescence, cathodoluminescence, and electron transport measurements. The tra......Mn-doped GaAs nanowires were grown in the self-catalytic growth mode on the oxidized Si(100) surface by molecular beam epitaxy and characterized by scanning and transmission electron microscopy, Raman scattering, photoluminescence, cathodoluminescence, and electron transport measurements...

  1. Efficient upconversion polymer-inorganic nanocomposite thin film emitters prepared by the double beam matrix assisted pulsed laser evaporation (DB-MAPLE)

    Science.gov (United States)

    Darwish, Abdalla M.; Burkett, Allan; Blackwell, Ashley; Taylor, Keylantra; Walker, Vernell; Sarkisov, Sergey; Koplitz, Brent

    2014-09-01

    We report on fabrication and investigation of optical and morphological properties of highly efficient (a quantum yield of 1%) upconversion polymer-inorganic nanocomposite thin film emitters prepared by the new technique of double beam matrix assisted pulsed laser evaporation (DB-MAPLE). Polymer poly(methyl methacrylate) (PMMA) host was evaporated on a silicon substrate using a 1064-nm pulsed laser beam using a target made of frozen (to the temperature of liquid nitrogen) solution of PMMA in chlorobenzene. Concurrently, the second 532-nm pulsed beam from the same laser was used to impregnate the polymer host with the inorganic nanoparticulate made of the rare earth upconversion compounds NaYF4: Yb3+, Er3+, NaYF4: Yb3+, Ho3+, and NaYF4: Yb3+, Tm3+. The compounds were initially synthesized using the wet process, baked, and compressed in solid pellet targets. The proposed DB-MAPLE method has the advantage of making highly homogeneous nanocomposite films with precise control of the doping rate due to the optimized overlapping of the plumes produced by the ablation of the organic and inorganic target with the infrared and visible laser beams respectively. X-ray diffraction, electron and atomic force microscopy, and optical fluorescence spectroscopy indicated that the inorganic nanoparticulate preserved its crystalline structure and upconversion properties (strong emission in green, red, and blue bands upon illumination with 980-nm laser diode) after being transferred from the target in the polymer nanocomposite film. The produced films can be used in applications varying from the efficiency enhancement of the photovoltaic cells, optical sensors and biomarkers to anti-counterfeit labels.

  2. Edge localized mode characteristics during edge localized mode mitigation by supersonic molecular beam injection in Korea Superconducting Tokamak Advanced Research

    International Nuclear Information System (INIS)

    It has been reported that supersonic molecular beam injection (SMBI) is an effective means of edge localized mode (ELM) mitigation. This paper newly reports the changes in the ELM, plasma profiles, and fluctuation characteristics during ELM mitigation by SMBI in Korea Superconducting Tokamak Advanced Research. During the mitigated ELM phase, the ELM frequency increased by a factor of 2–3 and the ELM size, which was estimated from the Dα amplitude, the fractional changes in the plasma-stored energy and the line-averaged electron density, and divertor heat flux during an ELM burst, decreased by a factor of 0.34–0.43. Reductions in the electron and ion temperatures rather than in the electron density were observed during the mitigated ELM phase. In the natural ELM phase, frequency chirping of the plasma fluctuations was observed before the ELM bursts; however, the ELM bursts occurred without changes in the plasma fluctuation frequency in the mitigated ELM phase

  3. Critical thickness and strain relaxation in molecular beam epitaxy-grown SrTiO3 films

    Science.gov (United States)

    Wang, Tianqi; Ganguly, Koustav; Marshall, Patrick; Xu, Peng; Jalan, Bharat

    2013-11-01

    We report on the study of the critical thickness and the strain relaxation in epitaxial SrTiO3 film grown on (La0.3Sr0.7)(Al0.65Ta0.35)O3 (001) (LSAT) substrate using the hybrid molecular beam epitaxy approach. No change in the film's lattice parameter (both the in-plane and the out-of-plane) was observed up to a film thickness of 180 nm, which is in sharp contrast to the theoretical critical thickness of ˜12 nm calculated using the equilibrium theory of strain relaxation. For film thicknesses greater than 180 nm, the out-of-plane lattice parameter was found to decrease hyperbolically in an excellent agreement with the relaxation via forming misfit dislocations. Possible mechanisms are discussed by which the elastic strain energy can be accommodated prior to forming misfit dislocations leading to such anomalously large critical thickness.

  4. Epitaxial Growth of Si(111)/Er2O3(111) Structure on Si(111) by Molecular Beam Epitaxy

    Institute of Scientific and Technical Information of China (English)

    XU Run; TANG Min-Yan; ZHU Yan-Yan; WANG Lin-Jun

    2011-01-01

    The Si overlayers are grown by molecular beam epitaxy on atomically smllth Er2O3(111) films prepared on Si(111) substrates. Single crystalline Si overlayers are achieved and are evident due to the spot-like reflective high energy electron diffraction(RHEED) patterns and x-ray diffraction patterns. The epitaxial relationship of the Si overlayer along the surface with respect to the orientation of EreO3 and the Si substrate is as follows:overgrown Si(111)//Er2O3(111)//Si(111).The rough surface of Si overlayers, as identified by both RHEED patterns and atomic force microscopy images, indicates a three-dimensional growth mode. The reason for this is based on the interfacial energy argument. Further growth of Er2O3 films on this rough Si overlayer leads to the polycrystalline nature of the topmost Er2O3 layer.

  5. Dielectric and Structural Properties of SrTiO_3 Thin Films Grown by Laser Molecular Beam Epitaxy

    Institute of Scientific and Technical Information of China (English)

    2005-01-01

    Dielectric and Structural Properties of SrTiO_3 Thin Films Grown by Laser Molecular Beam Epitaxy[1]Hao J H,Gao J,Wang Z,et al.Interface structure and phase of epitaxial SrTi O3(110)thin fil ms grown directly on silicon[J].Appl Phys Lett,2005,87:131908. [2]Hao J H,Gao J,Wang HK.SrTi O3(110)thin fil ms grown directly on different oriented silicon substrates[J].Appl Phys A,2005,81:1233. [3]Aki mov I A,Sirenko A A,Clark A M,et al.Electric-field-induced soft-mode hardening in SrTi O3fil ms[J].Phys Rev Lett...

  6. Characteristics of AlN/GaN nanowire Bragg mirror grown on (001) silicon by molecular beam epitaxy

    KAUST Repository

    Heo, Junseok

    2013-10-01

    GaN nanowires containing AlN/GaN distributed Bragg reflector (DBR) heterostructures have been grown on (001) silicon substrate by molecular beam epitaxy. A peak reflectance of 70% with normal incidence at 560 nm is derived from angle resolved reflectance measurements on the as-grown nanowire DBR array. The measured peak reflectance wavelength is significantly blue-shifted from the ideal calculated value. The discrepancy is explained by investigating the reflectance of the nanoscale DBRs with a finite difference time domain technique. Ensemble nanowire microcavities with In0.3Ga 0.7N nanowires clad by AlN/GaN DBRs have also been characterized. Room temperature emission from the microcavity exhibits considerable linewidth narrowing compared to that measured for unclad In0.3Ga0.7N nanowires. The resonant emission is characterized by a peak wavelength and linewidth of 575 nm and 39 nm, respectively. © 2013 AIP Publishing LLC.

  7. Topological insulator Bi2Se3 thin films grown on double-layer graphene by molecular beam epitaxy

    International Nuclear Information System (INIS)

    Atomically flat thin films of topological insulator Bi2Se3 have been grown on double-layer graphene formed on 6H-SiC(0001) substrate by molecular beam epitaxy. By a combined study of reflection high energy electron diffraction and scanning tunneling microscopy, we identified the Se-rich condition and temperature criterion for layer-by-layer growth of epitaxial Bi2Se3 films. The as-grown films without doping exhibit a low defect density of 1.0±0.2x1011/cm2, and become a bulk insulator at a thickness of ten quintuple layers, as revealed by in situ angle resolved photoemission spectroscopy measurement.

  8. Electrical and Optical Studies of Defect Structure of HgCdTe Films Grown by Molecular Beam Epitaxy

    Science.gov (United States)

    Świątek, Z.; Ozga, P.; Izhnin, I. I.; Fitsych, E. I.; Voitsekhovskii, A. V.; Korotaev, A. G.; Mynbaev, K. D.; Varavin, V. S.; Dvoretsky, S. A.; Mikhailov, N. N.; Yakushev, M. V.; Bonchyk, A. Yu.; Savytsky, H. V.

    2016-07-01

    Electrical and optical studies of defect structure of HgCdTe films grown by molecular beam epitaxy (MBE) are performed. It is shown that the peculiarity of these films is the presence of neutral defects formed at the growth stage and inherent to the material grown by MBE. It is assumed that these neutral defects are the Te nanocomplexes. Under ion milling, they are activated by mercury interstitials and form the donor centers with the concentration of 1017 cm-3, which makes it possible to detect such defects by measurements of electrical parameters of the material. Under doping of HgCdTe with arsenic using high temperature cracking, the As2 dimers are present in the arsenic flow and block the neutral Te nanocomplexes to form donor As2Te3 complexes. The results of electrical studies are compared with the results of studies carried out by micro-Raman spectroscopy.

  9. Molecular beam epitaxial growth and characterization of Al(Ga)N nanowire deep ultraviolet light emitting diodes and lasers

    Science.gov (United States)

    Mi, Z.; Zhao, S.; Woo, S. Y.; Bugnet, M.; Djavid, M.; Liu, X.; Kang, J.; Kong, X.; Ji, W.; Guo, H.; Liu, Z.; Botton, G. A.

    2016-09-01

    We report on the detailed molecular beam epitaxial growth and characterization of Al(Ga)N nanowire heterostructures on Si and their applications for deep ultraviolet light emitting diodes and lasers. The nanowires are formed under nitrogen-rich conditions without using any metal catalyst. Compared to conventional epilayers, Mg-dopant incorporation is significantly enhanced in nearly strain- and defect-free Al(Ga)N nanowire structures, leading to efficient p-type conduction. The resulting Al(Ga)N nanowire LEDs exhibit excellent performance, including a turn-on voltage of ∼5.5 V for an AlN nanowire LED operating at 207 nm. The design, fabrication, and performance of an electrically injected AlGaN nanowire laser operating in the UV-B band is also presented.

  10. Correlation of nanochemistry and electrical properties in HfO2 films grown by metalorganic molecular-beam epitaxy

    Science.gov (United States)

    Moon, Tae-Hyoung; Ham, Moon-Ho; Myoung, Jae-Min

    2005-03-01

    We present the annealing effects on nanochemistry and electrical properties in HfO2 dielectrics grown by metalorganic molecular-beam epitaxy. After the postannealing treatment of HfO2 films in the temperature range of 600-800°C, the thicknesses and chemical states of the films were examined by high-resolution transmission electron microscopy and angle-resolved x-ray photoelectron spectroscopy. By comparing the line shapes of core-level spectra for the samples with different annealing temperatures, the concentrations of SiO and Hf-silicate with high dielectric constant are found to be highest for HfO2 film annealed at 700°C. This result supports that the accumulation capacitance of the sample annealed at 700°C is not deteriorated in spite of a steep increase in interfacial layer thickness compared with that of the sample annealed at 600°C.

  11. Molecular beam epitaxial regrowth on diffraction gratings for vertical-cavity, surface-emitting laser-based integrated optoelectronics

    International Nuclear Information System (INIS)

    Epitaxial regrowth techniques, using molecular beam epitaxy, were optimized for the inclusion of submicron diffraction gratings within a vertically resonant structure. Various growth conditions including chemical surface preparation, growth rate, and regrown interfacial structure were studied to determine the quality of the regrown materials and structures. Characteristics such as dislocation density and growth planarity (flatness of the regrown layers) were of particular importance due to the vertical geometry and resonance requirements of the structure. Threading dislocation densities of ≅3x106 cm-2 were measured, by means of transmission electron microscopy, in the regrown structures using optimized regrowth processes. Layer thickness variations, due to growth on nonplanar surfaces (diffraction gratings), were characterized using modeling and optical reflectometry. With these results, inclusion of diffraction gratings has been demonstrated with the accurate control over layer thickness needed for use in vertically oriented devices such as vertical-cavity, surface-emitting lasers, and resonant cavity photodetectors

  12. Growth temperature dependence of the surface segregation of Er atoms in GaAs during molecular beam epitaxy

    International Nuclear Information System (INIS)

    We have quantitatively studied the temperature dependence of the surface segregation of Er atoms in GaAs during molecular beam epitaxy using secondary ion mass spectroscopy. It was found that a significant number of Er atoms segregate to the growing surface at temperatures of 400°C and above and that the segregation decay length is approximately 0.5 µm at 500°C, indicating that the incorporation ratio of Er atoms into GaAs is less than 10-3. In contrast to the growth at higher temperatures, GaAs overlayer growth at a temperature as low as 300°C is effective in suppressing the surface segregation of Er and obtaining δ-doped structures. (author)

  13. Laser Molecular Beam Epitaxy Growth of BaTiO3 in Seven Thousands of Unit-Cell Layers

    Institute of Scientific and Technical Information of China (English)

    HUANG Yan-Hong; YANG Guo-Zhen; HE Meng; ZHAO Kun; TIAN Huan-Fang; L(U) Hui-Bin; JIN Kui-Juan; CHEN Zheng-Hao; ZHOU Yue-Liang; LI Jian-Qi

    2005-01-01

    @@ BaTiO3 thin films in seven thousands of unit-cell layers have been successfully fabricated on SrTiO3 (001)substrates by laser molecular beam epitaxy. The fine streak pattern and the undamping intensity oscillation of reflection high-energy electron diffraction indicate that the BaTiO3 film was layer-by-layer epitaxial growth. The measurements of scanning electron microscopy and atomic force microscopy show that surfaces of the BaTiO3thin film are atomically smooth. The measurements of x-ray diffraction and transmission electron microscopy,as well as selected-area electron diffraction revealthat the BaTiO3 thin film is a c-oriented epitaxial crystalline structure.

  14. Single-crystalline BaTiO3 films grown by gas-source molecular beam epitaxy

    Science.gov (United States)

    Matsubara, Yuya; Takahashi, Kei S.; Tokura, Yoshinori; Kawasaki, Masashi

    2014-12-01

    Thin BaTiO3 films were grown on GdScO3 (110) substrates by metalorganic gas-source molecular beam epitaxy. Titanium tetra-isopropoxide (TTIP) was used as a volatile precursor that provides a wide growth window of the supplied TTIP/Ba ratio for automatic adjustment of the film composition. Within the growth window, compressively strained films can be grown with excellent crystalline quality, whereas films grown outside of the growth window are relaxed with inferior crystallinity. This growth method will provide a way to study the intrinsic properties of ferroelectric BaTiO3 films and their heterostructures by precise control of the stoichiometry, structure, and purity.

  15. Low-relaxation spin waves in laser-molecular-beam epitaxy grown nanosized yttrium iron garnet films

    Science.gov (United States)

    Lutsev, L. V.; Korovin, A. M.; Bursian, V. E.; Gastev, S. V.; Fedorov, V. V.; Suturin, S. M.; Sokolov, N. S.

    2016-05-01

    Synthesis of nanosized yttrium iron garnet (Y3Fe5O12, YIG) films followed by the study of ferromagnetic resonance (FMR) and spin wave propagation in these films is reported. The YIG films were grown on gadolinium gallium garnet substrates by laser molecular beam epitaxy. It has been shown that spin waves propagating in YIG deposited at 700 °C have low damping. At the frequency of 3.29 GHz, the spin-wave damping parameter is less than 3.6 × 10-5. Magnetic inhomogeneities of the YIG films give the main contribution to the FMR linewidth. The contribution of the relaxation processes to the FMR linewidth is as low as 1.2%.

  16. GaAs-based long-wavelength InAs bilayer quantum dots grown by molecular beam epitaxy

    Institute of Scientific and Technical Information of China (English)

    Zhu Yan; Li Mifeng; He Jifang; Yu Ying; Ni Haiqiao; Xu Yingqiang; Wang Juan; He Zhenhong; Niu Zhichuan

    2011-01-01

    Molecular beam epitaxy growth ofa bilayer stacked InAs/GaAs quantum dot structure on a pure GaAs matrix has been systemically investigated.The influence of growth temperature and the InAs deposition of both layers on the optical properties and morphologies of the bilayer quantum dot (BQD) structures is discussed.By optimizing the growth parameters,InAs BQD emission at 1.436μm at room temperature with a narrower FWHM of 27 meV was demonstrated.The density of QDs in the second layer is around 9 × 109 to 1.4 × 1010 cm-2.The BQD structure provides a useful way to extend the emission wavelength of GaAs-based material for quantum functional devices.

  17. Antimony incorporation in InAs quantum dots grown on GaAs substrate by molecular beam epitaxy

    Science.gov (United States)

    Rihani, J.; Sallet, V.; Christophe, H. J.; Oueslati, M.; Chtourou, R.

    2008-01-01

    We have grown InAs(Sb) quantum dots (QDs) on GaAs (0 0 1) substrates by molecular beam epitaxy (MBE) using two different antimony exposures ( ΦSb). Atomic force microscopy (AFM) and photoluminescence (PL) spectroscopy were carried out to investigate the dot size evolution as function of the incorporated antimony content in InAs/GaAs QDs material. Anomalous asymmetric-band feature was observed in room temperature photoluminescence (RTPL) spectra of the investigated QD samples grown at relatively high temperature (490 °C). From the temperature-dependent PL measurements, it was found that the asymmetric-band feature is associated with the ground-states transitions from QDs with bimodal size distribution. The analysis of the pump power dependent PL spectra allows us to suggest a type II band lineup for the InAsSb/GaAs QDs materials system.

  18. Absorption and emission of (In,Ga)N/GaN quantum wells grown by molecular beam epitaxy

    Energy Technology Data Exchange (ETDEWEB)

    Siozade, L.; Disseix, P.; Vasson, A.; Leymarie, J. [CNRS, Aubiere (France). LASMEA; Damilano, B.; Grandjean, N.; Massies, J. [CNRS, Valbonne (France). CRHEA

    2001-01-01

    Thermally detected optical absorption (TDOA) and photoluminescence experiments are carried out on In{sub 0.16}Ga{sub 0.84}N/GaN multi-quantum wells (MQWs) grown by molecular beam epitaxy on (0001) sapphire substrates. A model proposed to adjust the TDOA line shape, allows to deduce the band-edge energies, the absorption coefficients and the broadening parameters of the (In,Ga)N MQWs for different thicknesses. The Fabry-Perot oscillations, which structure the TDOA spectra, are considered in this modelling to accurately account for the experimental data. The emission, which covers the whole visible spectrum at room temperature, is achieved by varying the thickness from 1.5 to 5 nm. A very large Stokes shift between the emission and absorption energies is deduced at low temperature, for the (In,Ga)N MQWs. (orig.)

  19. Structural properties of SrO thin films grown by molecular beam epitaxy on LaAlO3 substrates

    Science.gov (United States)

    Maksimov, O.; Heydemann, V. D.; Fisher, P.; Skowronski, M.; Salvador, P. A.

    2006-12-01

    SrO films were grown on LaAlO3 substrates by molecular beam epitaxy and characterized using reflection high-energy electron diffraction (RHEED) and x-ray diffraction (XRD). The evolution of the RHEED pattern is discussed as a function of film thickness. 500Å thick SrO films were relaxed and exhibited RHEED patterns indicative of an atomically smooth surface having uniform terrace heights. Films had the epitaxial relationship (001)SrO‖(001)LaAlO3; [010]SrO‖[110]LaAlO3. This 45° in-plane rotation minimizes mismatch and leads to films of high crystalline quality, as verified by Kikuchi lines in the RHEED patterns and narrow rocking curves of the (002) XRD peak.

  20. Electrostatic deflection of a molecular beam of massive neutral particles: Fully field-oriented polar molecules within superfluid nanodroplets

    CERN Document Server

    Merthe, Daniel J

    2016-01-01

    Electric deflection measurements on liquid helium nanodroplets doped with individual polar molecules demonstrate that the cold superfluid matrix enables full orientation of the molecular dipole along the external field. This translates into a deflection force which is increased enormously by comparison with typical deflection experiments, and it becomes possible to measurably deflect neutral doped droplets with masses of tens to hundreds of thousands of Daltons. This approach permits preparation and study of continuous fluxes of fully oriented polar molecules and is broadly and generally applicable, including to complex and biological molecules. It is shown that the dipole moments of internally cryogenically cold molecules can be directly determined from a deflection measurement on the doped nanodroplet beam.

  1. Optical characterization of Hg1-xCdxTe/CdTe/GaAs multilayers grown by molecular beam epitaxy

    Science.gov (United States)

    Liu, Weijun; Liu, Pulin; Shi, Guo L.; Zhu, Jing-Bing; He, Li; Xie, Qin X.; Yuan, Shixin

    1991-11-01

    The IR transmission spectra for HgCdTe/CdTe/GaAs multilayers grown by molecular-beam epitaxy were measured in the wavenumber region of 600 cm-1 - 4000 cm-1 at 300 K and 77 K. The transmission spectra were calculated taking the thickness d1 of MCT layer and the thickness d2 of CdTe layer as fitting parameters in the energy range from 600 cm-1 to 300 cm-1 below the energy gap Eg assuming the existence of abrupt interfaces between the neighboring layers. The values of d1 and d2 obtained by fitting the IR transmission spectra are in good agreement with that by transmission electron microscopy (TEM) measurement. The accurate absorption coefficient spectra were obtained and discussed in the energy region equivalent to 0.9 Eg to 4000 cm-1 taking into account the interference effects.

  2. Molecular beam epitaxial growth of ultrathin CdTe-CdMnTe quantum wells and their characterization

    Science.gov (United States)

    Waag, A.; Schmeusser, S.; Bicknell-Tassius, R. N.; Yakovlev, D. R.; Ossau, W.; Landwehr, G.; Uraltsev, I. N.

    1991-12-01

    We report the growth and optical characterization of CdTe/CdMnTe single quantum wells with well thicknesses ranging from 60 down to 6 Å. The single quantum wells were grown by standard molecular beam epitaxy without growth interruption and investigated by reflection, photoluminescence (PL), and excitation PL. All structures including the 6-Å-thick quantum well exhibit extraordinarily narrow photoluminescence lines. From an analysis of linewidth and Stokes shift of the photoluminescence lines informations on the structure of the CdTe/CdMnTe interfaces are derived. The good quality of those structures made it possible to identify for the first time recombination of two-dimensional free exciton magnetic polarons.

  3. Growth morphology of MnAs epilayers on GaAs(1 1 1)-B substrates by molecular beam epitaxy

    Science.gov (United States)

    Etgens, V. H.; Eddrief, M.; Demaille, D.; Zheng, Y. L.; Ouerghi, A.

    2002-04-01

    MnAs epilayers were grown by molecular beam epitaxy on GaAs(1 1 1)B substrates. The morphology of epilayers has been studied by coupling several in situ techniques. Two distinct growth regimes were distinguished as a function of the substrate temperature. For the growth at 320°C, the system shows an intriguing mechanism of relaxation that produces MnAs isolated islands (the so-called "blocks") with constant height. The explanation for this mechanism associates the large mobility of atoms at this temperature with the strain due to the important misfit. At lower temperature (200°C) the surface mobility is greatly reduced which results in a more homogeneous film.

  4. High Growth Rate Metal-Organic Molecular Beam Epitaxy for the Fabrication of GaAs Space Solar Cells

    Science.gov (United States)

    Freundlich, A.; Newman, F.; Monier, C.; Street, S.; Dargan, P.; Levy, M.

    2005-01-01

    In this work it is shown that high quality GaAs photovoltaic devices can be produced by Molecular Beam Epitaxy (MBE) with growth rates comparable to metal-organic chemical vapor deposition (MOCVD) through the subsitution of group III solid sources by metal-organic compounds. The influence the III/V flux-ratio and growth temperatures in maintaining a two dimensional layer by layer growth mode and achieving high growth rates with low residual background impurities is investigated. Finally subsequent to the study of the optimization of n- and p doping of such high growth rate epilayers, results from a preliminary attempt in the fabrication of GaAs photovoltaic devices such as tunnel diodes and solar cells using the proposed high growth rate approach are reported.

  5. Low-temperature growth of GaSb epilayers on GaAs (001) by molecular beam epitaxy

    Science.gov (United States)

    Benyahia, D.; Kubiszyn, Ł.; Michalczewski, K.; Kębłowski, A.; Martyniuk, P.; Piotrowski, J.; Rogalski, A.

    2016-01-01

    Non-intentionally doped GaSb epilayers were grown by molecular beam epitaxy (MBE) on highly mismatched semi-insulating GaAs substrate (001) with 2 offcut towards [110]. The effects of substrate temperature and the Sb/Ga flux ratio on the crystalline quality, surface morphology and electrical properties were investigated by Nomarski optical microscopy, X-ray diffraction (XRD) and Hall measurements, respectively. Besides, differential Hall was used to investigate the hole concentration behaviour along the GaSb epilayer. It is found that the crystal quality, electrical properties and surface morphology are markedly dependent on the growth temperature and the group V/III flux ratio. Under the optimized parameters, we demonstrate a low hole concentration at very low growth temperature. Unfortunately, the layers grown at low temperature are characterized by wide FWHM and low Hall mobility.

  6. Effect of N2 microplasma treatment on initial growth of GaN by metal–organic molecular beam epitaxy

    Science.gov (United States)

    Suzuki, Yohei; Kusakabe, Yasuhiro; Uchiyama, Shota; Maruyama, Takahiro; Naritsuka, Shigeya; Shimizu, Kazuo

    2016-08-01

    N2 atmospheric microplasma was applied to improve the yields and reproducibility of the initial growth of GaN by metal–organic molecular beam epitaxy (MOMBE). The plasma treatment was found to be effective in cleaning the surface, and excellent flat growth was achieved even in the early stage of the growth. The effect of the air exposure after plasma treatment was also studied, and the yield of the growth was found to be largely decreased by the air exposure even after the treatment. Therefore, the oxidation of the substrate is one of main causes of the poor initial growth and the installation of the microplasma equipment in the MBE loading chamber is useful for suppressing the oxidation after the treatment. Atomic force microscopy (AFM) measurement shows that the microplasma treatment is also effective for undoing the surface double steps through etching, which is helpful for a very smooth layer-by-layer growth in the early stage of growth.

  7. CdSe/CdTe type-II superlattices grown on GaSb (001) substrates by molecular beam epitaxy

    International Nuclear Information System (INIS)

    CdSe/CdTe superlattices are grown on GaSb substrates using molecular beam epitaxy. X-ray diffraction measurements and cross-sectional transmission electron microscopy images indicate high crystalline quality. Photoluminescence (PL) measurements show the effective bandgap varies with the superlattice layer thicknesses and confirm the CdSe/CdTe heterostructure has a type-II band edge alignment. The valence band offset between unstrained CdTe and CdSe is determined as 0.63 ± 0.06 eV by fitting the measured PL peak positions using the envelope function approximation and the Kronig-Penney model. These results suggest that CdSe/CdTe superlattices are promising candidates for multi-junction solar cells and other optoelectronic devices based on GaSb substrates.

  8. Formation of strained interfaces in AlSb/InAs multilayers grown by molecular beam epitaxy for quantum cascade lasers

    Energy Technology Data Exchange (ETDEWEB)

    Nicolaï, J.; Warot-Fonrose, B.; Gatel, C., E-mail: christophe.gatel@cemes.fr; Ponchet, A. [CEMES CNRS-UPR 8011, Université de Toulouse, 29 rue Jeanne Marvig, 31055 Toulouse (France); Transpyrenean Associated Laboratory for Electron Microscopy (TALEM), CEMES-INA, CNRS-Universidad de Zaragoza, Toulouse (France); Teissier, R.; Baranov, A. N. [IES CNRS-UMR 5214, 34095 Montpellier (France); Magen, C. [Transpyrenean Associated Laboratory for Electron Microscopy (TALEM), CEMES-INA, CNRS-Universidad de Zaragoza, Toulouse (France); Laboratorio de Microscopías Avanzadas (LMA), Instituto de Nanociencia de Aragón (INA)—ARAID and Departamento de Física de la Materia Condensada, Universidad de Zaragoza, 50018 Zaragoza (Spain)

    2015-07-21

    Structural and chemical properties of InAs/AlSb interfaces have been studied by transmission electron microscopy. InAs/AlSb multilayers were grown by molecular beam epitaxy with different growth sequences at interfaces. The out-of-plane strain, determined using high resolution microscopy and geometrical phase analysis, has been related to the chemical composition of the interfaces analyzed by high angle annular dark field imaging. Considering the local strain and chemistry, we estimated the interface composition and discussed the mechanisms of interface formation for the different growth sequences. In particular, we found that the formation of the tensile AlAs-type interface is spontaneously favored due to its high thermal stability compared to the InSb-type interface. We also showed that the interface composition could be tuned using an appropriate growth sequence.

  9. Formation of GaN quantum dots by molecular beam epitaxy using NH{sub 3} as nitrogen source

    Energy Technology Data Exchange (ETDEWEB)

    Damilano, B., E-mail: bd@crhea.cnrs.fr; Brault, J.; Massies, J. [CRHEA-CNRS, Centre de Recherche sur l' Hétéro-Epitaxie et ses Applications, Centre National de la Recherche Scientifique, Rue B. Grégory, Valbonne 06560 (France)

    2015-07-14

    Self-assembled GaN quantum dots (QDs) in Al{sub x}Ga{sub 1−x}N (0.3 ≤ x ≤ 1) were grown on c-plane sapphire and Si (111) substrates by molecular beam epitaxy using ammonia as nitrogen source. The QD formation temperature was varied from 650 °C to 800 °C. Surprisingly, the density and size of QDs formed in this temperature range are very similar. This has been explained by considering together experimental results obtained from reflection high-energy electron diffraction, atomic force microscopy, and photoluminescence to discuss the interplay between thermodynamics and kinetics in the QD formation mechanisms. Finally, possible ways to better control the QD optical properties are proposed.

  10. Two Types of Mass Abundance Distributions for Anionic Carbon Clusters Investigated by Laser Vaporization and Pulsed Molecular Beam Techniques

    Institute of Scientific and Technical Information of China (English)

    ZHAI Hua-Jin; LIU Bing-Chen; NI Guo-Quan; XUZhi-Zhan

    2000-01-01

    Two types of mass spectra for anionic carbon clusters Cn- have been revealed using laser vaporization and pulsed molecular beam techniques. The less structured mass spectrum characteristic of the magic-numbers at n = 5, 8,11, 15, and 17 is established at the early stage of the cluster formation process, namely, in the laser vaporization process. The more structured one is featured for a regular odd-even alternation and the magic numbers at n =10, 12, 16, 18, 22, and 28, and has been developed only after extensive clustering and qnenching processes, where low-energy electron attachment plays a vital role. Transition between these two types of mass spectra can be realized by controlling either the strength of the pulsed gas flow or the synchronism between the gas flow and the laser vaporization.

  11. Growth of CdTe on Si(100) surface by ionized cluster beam technique: Experimental and molecular dynamics simulation

    Science.gov (United States)

    Araghi, Houshang; Zabihi, Zabiholah; Nayebi, Payman; Ehsani, Mohammad Mahdi

    2016-10-01

    II-VI semiconductor CdTe was grown on the Si(100) substrate surface by the ionized cluster beam (ICB) technique. In the ICB method, when vapors of solid materials such as CdTe were ejected through a nozzle of a heated crucible into a vacuum region, nanoclusters were created by an adiabatic expansion phenomenon. The clusters thus obtained were partially ionized by electron bombardment and then accelerated onto the silicon substrate at 473 K by high potentials. The cluster size was determined using a retarding field energy analyzer. The results of X-ray diffraction measurements indicate the cubic zinc blende (ZB) crystalline structure of the CdTe thin film on the silicon substrate. The CdTe thin film prepared by the ICB method had high crystalline quality. The microscopic processes involved in the ICB deposition technique, such as impact and coalescence processes, have been studied in detail by molecular dynamics (MD) simulation.

  12. Spinel-structured metal oxide on a substrate and method of making same by molecular beam epitaxy

    Science.gov (United States)

    Chambers, Scott A.

    2006-02-21

    A method of making a spinel-structured metal oxide on a substrate by molecular beam epitaxy, comprising the step of supplying activated oxygen, a first metal atom flux, and at least one other metal atom flux to the surface of the substrate, wherein the metal atom fluxes are individually controlled at the substrate so as to grow the spinel-structured metal oxide on the substrate and the metal oxide is substantially in a thermodynamically stable state during the growth of the metal oxide. A particular embodiment of the present invention encompasses a method of making a spinel-structured binary ferrite, including Co ferrite, without the need of a post-growth anneal to obtain the desired equilibrium state.

  13. Molecular beam epitaxy deposition of Gd2O3 thin films on SrTiO3 (100) substrate

    Science.gov (United States)

    Wang, Jinxing; Hao, Jinghua; Zhang, Yangyang; Wei, Hongmei; Mu, Juyi

    2016-06-01

    Gd2O3 thin films are grown on the SrTiO3 (100) substrate by molecular beam epitaxy (MBE) deposition. X-ray diffraction (XRD) analysis, conventional transmission electron microscopy (TEM) and aberration-corrected scanning transmission electron microscopy (STEM) are performed to investigate the microstructure of deposited thin films. It is found that the as-deposited thin film possesses a very uniform thickness of ∼40 nm and is composed of single cubic phase Gd2O3 grains. STEM and TEM observations reveal that Gd2O3 thin film grows epitaxially on the SrTiO3 (100) substrate with (001)Gd2O3//(100)STO and [110]Gd2O3//[001]STO orientations. Furthermore, the Gd atoms are found to diffuse into the SrTiO3 substrate for a depth of one unit cell and substitute for the Sr atoms near the interface.

  14. Growth of ErAs nanodots by molecular beam epitaxy for application to tunneling junctions in multijunction solar cells

    Science.gov (United States)

    Hung, Chao-Yu; Sogabe, Tomah; Miyashita, Naoya; Okada, Yoshitaka

    2016-02-01

    ErAs nanodots (NDs) grown on GaAs(001) substrates by using molecular beam epitaxy (MBE) were investigated. Atomic force microscope images indicate that the size of ErAs NDs increases with deposition time and growth temperature. A calibration was performed to determine the deposition rate of ErAs in order that the size of NDs can be accurately controlled and hence optimized. Local current flow images and surface profiles around ErAs NDs were simultaneously measured to clarify the local conductivity distribution corresponding to a real space profile. Furthermore, we also fabricated and characterized an ErAs-ND-embedded GaAs tunnel junction (TJ), which resulted in a voltage drop of 30 mV for 15 A/cm2 operation current equivalent to 1000 suns concentration, which is less than one-third of that of a conventional heavily doped tunnel junction.

  15. Observation of edge filamentary structure motion during supersonic molecular-beam injection using a fast camera in Heliotron J

    International Nuclear Information System (INIS)

    A perpendicular-view fast video camera has been installed in Heliotron J to observe the behavior of filamentary structures of edge plasma turbulence across the last closed flux surface (LCFS). Supersonic molecular-beam injection (SMBI) can greatly increase the edge Hα emission; hence, we used the high imaging rate and shutter speed of the camera to capture the behavior of the fast propagating filamentary structures. A high-pass fast Fourier transform filter on the time dimension was adopted to extract the fluctuation component from the raw data for each pixel. The motion of the filamentary structures was clearly visible when we applied an amplitude threshold to identify the intense structures. In addition, a time-resolved 2D cross-correlation technique was adopted to estimate the poloidal phase velocity of turbulence. The motion direction was found to be reversed dramatically just after an SMBI pulse. (author)

  16. Structural and Electrical Properties of MoTe2 and MoSe2 Grown by Molecular Beam Epitaxy.

    Science.gov (United States)

    Roy, Anupam; Movva, Hema C P; Satpati, Biswarup; Kim, Kyounghwan; Dey, Rik; Rai, Amritesh; Pramanik, Tanmoy; Guchhait, Samaresh; Tutuc, Emanuel; Banerjee, Sanjay K

    2016-03-23

    We demonstrate the growth of thin films of molybdenum ditelluride and molybdenum diselenide on sapphire substrates by molecular beam epitaxy. In situ structural and chemical analyses reveal stoichiometric layered film growth with atomically smooth surface morphologies. Film growth along the (001) direction is confirmed by X-ray diffraction, and the crystalline nature of growth in the 2H phase is evident from Raman spectroscopy. Transmission electron microscopy is used to confirm the layered film structure and hexagonal arrangement of surface atoms. Temperature-dependent electrical measurements show an insulating behavior that agrees well with a two-dimensional variable-range hopping model, suggesting that transport in these films is dominated by localized charge-carrier states. PMID:26939890

  17. A combined crossed molecular beams and theoretical study of the reaction CN + C{sub 2}H{sub 4}

    Energy Technology Data Exchange (ETDEWEB)

    Balucani, Nadia, E-mail: nadia.balucani@unipg.it [Dipartimento di Chimica, Biologia e Biotecnologie, Università degli Studi di Perugia, Perugia (Italy); Leonori, Francesca; Petrucci, Raffaele [Dipartimento di Chimica, Biologia e Biotecnologie, Università degli Studi di Perugia, Perugia (Italy); Wang, Xingan [Dipartimento di Chimica, Biologia e Biotecnologie, Università degli Studi di Perugia, Perugia (Italy); Department of Chemical Physics, University of Science and Technology of China, Hefei 230026 (China); Casavecchia, Piergiorgio [Dipartimento di Chimica, Biologia e Biotecnologie, Università degli Studi di Perugia, Perugia (Italy); Skouteris, Dimitrios [Scuola Normale Superiore, Pisa (Italy); Albernaz, Alessandra F. [Instituto de Física, Universidade de Brasília, Brasília (Brazil); Gargano, Ricardo [Instituto de Física, Universidade de Brasília, Brasília (Brazil); Departments of Chemistry and Physics, University of Florida, Quantum Theory Project, Gainesville, FL 32611 (United States)

    2015-03-01

    Highlights: • The CN + C{sub 2}H{sub 4} reaction was investigated in crossed beam experiments. • Electronic structure calculations of the potential energy surface were performed. • RRKM estimates qualitatively reproduce the experimental C{sub 2}H{sub 3}NC yield. - Abstract: The CN + C{sub 2}H{sub 4} reaction has been investigated experimentally, in crossed molecular beam (CMB) experiments at the collision energy of 33.4 kJ/mol, and theoretically, by electronic structure calculations of the relevant potential energy surface and Rice–Ramsperger–Kassel–Marcus (RRKM) estimates of the product branching ratio. Differently from previous CMB experiments at lower collision energies, but similarly to a high energy study, we have some indication that a second reaction channel is open at this collision energy, the characteristics of which are consistent with the channel leading to CH{sub 2}CHNC + H. The RRKM estimates using M06L electronic structure calculations qualitatively support the experimental observation of C{sub 2}H{sub 3}NC formation at this and at the higher collision energy of 42.7 kJ/mol of previous experiments.

  18. Molecular-beam epitaxy growth and structural characterization of semiconductor-ferromagnet heterostructures by grazing incidence X-ray diffraction

    Energy Technology Data Exchange (ETDEWEB)

    Satapathy, D.K.

    2005-12-19

    The present work is devoted to the growth of the ferromagnetic metal MnAs on the semiconductor GaAs by molecular-beam epitaxy (MBE). The MnAs thin films are deposited on GaAs by molecular-beam epitaxy (MBE). Grazing incidence diffraction (GID) and reflection high-energy electron diffraction (RHEED) are used in situ to investigate the nucleation, evolution of strain, morphology and interfacial structure during the MBE growth. Four stages of the nucleation process during growth of MnAs on GaAs(001) are revealed by RHEED azimuthal scans. GID shows that further growth of MnAs films proceed via the formation of relaxed islands at a nominal thickness of 2.5 ML which increase in size and finally coalesce to form a continuous film. Early on, an ordered array of misfit dislocations forms at the interface releasing the misfit strain even before complete coalescence occurs. The fascinating complex nucleation process of MnAs on GaAs(0 0 1) contains elements of both Volmer-Weber and Stranski-Krastanov growth. A nonuniform strain amounting to 0.66%, along the [1 -1 0] direction and 0.54%, along the [1 1 0] direction is demonstrated from x-ray line profile analysis. A high correlation between the defects is found along the GaAs[1 1 0] direction. An extremely periodic array of misfit dislocations with a period of 4.95{+-}0.05 nm is formed at the interface along the [1 1 0] direction which releases the 7.5% of misfit. The inhomogeneous strain due to the periodic dislocations is confined at the interface within a layer of 1.6 nm thickness. The misfit along the [1 -1 0] direction is released by the formation of a coincidence site lattice. (orig.)

  19. Fullerene-assisted electron-beam lithography for pattern improvement and loss reduction in InP membrane waveguide devices.

    Science.gov (United States)

    Jiao, Yuqing; Pello, Josselin; Mejia, Alonso Millan; Shen, Longfei; Smalbrugge, Barry; Geluk, Erik Jan; Smit, Meint; van der Tol, Jos

    2014-03-15

    In this Letter, we present a method to prepare a mixed electron-beam resist composed of a positive resist (ZEP520A) and C60 fullerene. The addition of C60 to the ZEP resist changes the material properties under electron beam exposure significantly. An improvement in the thermal resistance of the mixed material has been demonstrated by fabricating multimode interference couplers and coupling regions of microring resonators. The fabrication of distributed Bragg reflector structures has shown improvement in terms of pattern definition accuracy with respect to the same structures fabricated with normal ZEP resist. Straight InP membrane waveguides with different lengths have been fabricated using this mixed resist. A decrease of the propagation loss from 6.6 to 3.3  dB/cm has been demonstrated.

  20. Detailed subsurface damage measurement and efficient damage-free fabrication of fused silica optics assisted by ion beam sputtering.

    Science.gov (United States)

    Liao, Wenlin; Dai, Yifan; Liu, Zongzheng; Xie, Xuhui; Nie, Xuqing; Xu, Mingjin

    2016-02-22

    Formation of subsurface damage has an inseparable relationship with microscopic material behaviors. In this work, our research results indicate that the formation process of subsurface damage often accompanies with the local densification effect of fused silica material, which seriously influences microscopic material properties. Interestingly, we find ion beam sputtering (IBS) is very sensitive to the local densification, and this microscopic phenomenon makes IBS as a promising technique for the detection of nanoscale subsurface damages. Additionally, to control the densification effect and subsurface damage during the fabrication of high-performance optical components, a combined polishing technology integrating chemical-mechanical polishing (CMP) and ion beam figuring (IBF) is proposed. With this combined technology, fused silica without subsurface damage is obtained through the final experimental investigation, which demonstrates the feasibility of our proposed method.

  1. Electron-beam assisted selective growth of graphenic carbon thin films on SiO2/Si and quartz substrates

    OpenAIRE

    Knyazev, Maxim; Sedlovets, Daria; Trofimov, Oleg; Redkin, Arkady

    2015-01-01

    The first selective growth of graphenic carbon thin films on silicon dioxide is reported. A preliminary e-beam exposure of the substrate is found to strongly affect the process of such films growth. The emphasis is placed on the influence of substrate exposure on the rate of carbon deposition. The explanation of this effect is proposed. The data of electrical and optical measurements and the results of atomic force and scanning electron microscopy and Raman spectroscopy studies are reported. ...

  2. Molecular lifting, twisting, and curling during metal-assisted polycyclic hydrocarbon dehydrogenation

    Science.gov (United States)

    Curcio, Davide; Omiciuolo, Luca; Pozzo, Monica; Lacovig, Paolo; Lizzit, Silvano; Jabeen, Naila; Petaccia, Luca; Alfe, Dario; Baraldi, Alessandro

    Through a combined experimental and theoretical approach, we show that coronene molecules adsorbed on Ir(111) undergo major changes in conformation during the dissociation process, which brings the molecules from a flat configuration to graphene, through a series of exotic configurations. The complex reaction path involves the tilting upwards of the molecules, which subsequently experience a rotation with respect to the surface. During the lifting, the C-C strain is initially relieved, while as the dehydrogenation proceeds, the molecules experience a progressive increase in the average interatomic distance, and gradually settle to form peculiar dome shaped nanographenes. This reaction mechanism can provide new insight into the surface assisted break-up mechanism of PAHs, which has been demonstrated to be an effective strategy for the synthesis of low dimensional carbon-based materials. Beside the peculiarity of the reaction pathway, using these processes we envisage the unique possibility of creating new structures with different functionalities by encapsulating single atoms below the carbon dome.

  3. Cluster Effects during High Pressure Supersonic Molecular Beam Injection into Plasma

    Institute of Scientific and Technical Information of China (English)

    YAOLianghua; FENGBeibin; DONGJiafu; LIWenzhong; FENGZhen; HONGWenyu; LIBo

    2001-01-01

    When we speak of clusters, we have in mind entities which have neither the well-defined compositions, geometries, and strong bonds of conventional molecules northe boundary-independent properties of bulk matter. For example, an aggregate of a few atoms held together by Van der Waals forces constitutes a cluster. But clusters need not be weakly bound, several metal atoms bound together also constitute a cluster. Clusters need not be composed of a single kind of chemical entity, either atomic or molecular,

  4. Controlling quantum dynamics regardless of laser beam spatial profile and molecular orientation

    Science.gov (United States)

    Rabitz, Herschel; Turinici, Gabriel

    2007-04-01

    In a typical experiment aiming to control quantum dynamics phenomena, each molecule experiences the same temporal laser field, but with an amplitude that depends on the spatial location and orientation of the molecule in the laser beam. It is proved under commonly arising conditions that at least one optimal laser field exists which will control all molecules in the sample, regardless of their orientation or spatial location. The optimal laser field may consist of a multipolarization control containing up to three orthogonal, independently shaped components. The analysis also includes the prospect of multipartite control where the field couples distinct groupings of states (e.g., multiple vibronic states), but without direct coupling within a group of states. This conclusion shows that achieving quantum control is not a matter of striking a compromise over the sample diversity, but rather a task subject to optimization to reach the highest possible level of control for all molecules in the sample.

  5. Glancing-angle ion enhanced surface diffusion on gaAs(001) during molecular beam epitaxy.

    Science.gov (United States)

    DeLuca, P M; Ruthe, K C; Barnett, S A

    2001-01-01

    We describe the effects of glancing incidence 3-4 keV Ar ion bombardment on homoepitaxial growth on vicinal GaAs(001). The average adatom lifetime on surface terraces, measured during growth using specular ion scattering, decreased monotonically with increasing ion current density. The results indicated that surface diffusivity was increased by the ions. The ion beam also suppressed growth oscillations and decreased the film surface roughness. This indicates a change from two-dimensional island nucleation to step-flow growth due to increased adatom surface diffusivity. A simple model, involving direct momentum transfer from ions to adatoms, is shown to be consistent with the measured enhanced diffusion. PMID:11177806

  6. Kinetics versus thermodynamics of the metal incorporation in molecular beam epitaxy of (InxGa1−x2O3

    Directory of Open Access Journals (Sweden)

    Patrick Vogt

    2016-08-01

    Full Text Available We present a detailed study of the reaction kinetics and thermodynamics of the plasma-assisted oxide molecular beam epitaxy of the ternary compound (InxGa1−x2O3 for 0 ≤ x ≤ 1. We measured the growth rate of the alloy in situ by laser reflectrometry as a function of growth temperature TG for different metal-to-oxygen flux ratios rMe, and nominal In concentrations xnom in the metal flux. We determined ex situ the In and Ga concentrations in the grown film by energy dispersive X-ray spectroscopy. The measured In concentration x shows a strong dependence on the growth parameters TG, rMe, and xnom whereas growth on different co-loaded substrates shows that in the macroscopic regime of ∼μm3 x does neither depend on the detailed layer crystallinity nor on crystal orientation. The data unveil that, in presence of In, Ga incorporation is kinetically limited by Ga2O desorption the same way as during Ga2O 3 growth. In contrast, In incorporation during ternary growth is thermodynamically suppressed by the presence of Ga due to stronger Ga–O bonds. Our experiments revealed that Ga adatoms decompose/etch the In–O bonds whereas In adatoms do not decompose/etch the Ga–O bonds. This result is supported by our thermochemical calculations. In addition we found that a low TG and/or excessively low rMe kinetically enables In incorporation into (InxGa1−x2O3. This study may help growing high-quality ternary compounds (InxGa1−x2O3 allowing band gap engineering over the range of 2.7–4.7 eV.

  7. The formation of hexagonal-shaped InGaN-nanodisk on GaN-nanowire observed in plasma source molecular beam epitaxy

    KAUST Repository

    Ng, Tien Khee

    2014-03-08

    We report on the properties and growth kinetics of defect-free, photoluminescence (PL) efficient mushroom-like nanowires (MNWs) in the form of ~30nm thick hexagonal-shaped InGaN-nanodisk on GaN nanowires, coexisting with the conventional rod-like InGaN-on-GaN nanowires (RNWs) on (111)-silicon-substrate. When characterized using confocal microscopy (CFM) with 458nm laser excitation, while measuring spontaneous-emission at fixed detection wavelengths, the spatial intensity map evolved from having uniform pixelated emission, to having only an emission ring, and then a round emission spot. This corresponds to the PL emission with increasing indium composition; starting from emission mainly from the RNW, and then the 540 nm emission from one MNWs ensemble, followed by the 590 nm emission from a different MNW ensemble, respectively. These hexagonal-shaped InGaN-nano-disks ensembles were obtained during molecular-beam-epitaxy (MBE) growth. On the other hand, the regular rod-like InGaN-on-GaN nanowires (RNWs) were emitting at a shorter peak wavelength of 490 nm. While the formation of InGaN rod-like nanowire is well-understood, the formation of the hexagonal-shaped InGaN-nanodisk-on-GaN-nanowire requires further investigation. It was postulated to arise from the highly sensitive growth kinetics during plasma-assisted MBE of InGaN at low temperature, i.e. when the substrate temperature was reduced from 800 °C (GaN growth) to <600 °C (InGaN growth), during which sparsely populated metal-droplet formation prevails and further accumulated more indium adatoms due to a higher cohesive bond between metallic molecules. © (2014) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.

  8. Effects of calcium phosphate coating to SLA surface implants by the ion-beam-assisted deposition method on self-contained coronal defect healing in dogs

    Energy Technology Data Exchange (ETDEWEB)

    Yoon, Heun-Joo; Song, Ji-Eun; Um, Yoo-Jung; Chae, Gyung Joon; Jung, Ui-Won; Kim, Chang-Sung; Choi, Seong-Ho [Department of Periodontology, Research Institute for Periodontal Regeneration, College of Dentistry, Yonsei University, 134 Shinchon-Dong, Seodaemun-gu, Seoul 120-752 (Korea, Republic of); Chung, Sung-Min [Dentium Co., Seoul (Korea, Republic of); Lee, In-Seop, E-mail: shchoi726@yuhs.a [Institute of Physics and Applied Physics, Atomic-scale Surface Science Research Center, Yonsei University, Seoul (Korea, Republic of)

    2009-08-15

    The aim of this study was to evaluate the healing of self-contained coronal defects on a sand-blasted, large-grit, acid-etched (SLA) surface implant, which had a calcium phosphate (CaP) coating applied by ion-beam-assisted deposition (IBAD). We also evaluated the effect of heating the coating to different temperatures. The CaP-coated SLA implants exhibited a slightly larger bone healing capacity in the self-contained coronal defect than SLA implants, indicating that combining SLA surface implants and a CaP coating by the IBAD method had synergistic effects on bone healing. There was no difference in the healing capacity between 350 deg. C and 450 deg. C heat treatment of the coating layer.

  9. Effects of calcium phosphate coating to SLA surface implants by the ion-beam-assisted deposition method on self-contained coronal defect healing in dogs.

    Science.gov (United States)

    Yoon, Heun-Joo; Song, Ji-Eun; Um, Yoo-Jung; Chae, Gyung Joon; Chung, Sung-Min; Lee, In-Seop; Jung, Ui-Won; Kim, Chang-Sung; Choi, Seong-Ho

    2009-08-01

    The aim of this study was to evaluate the healing of self-contained coronal defects on a sand-blasted, large-grit, acid-etched (SLA) surface implant, which had a calcium phosphate (CaP) coating applied by ion-beam-assisted deposition (IBAD). We also evaluated the effect of heating the coating to different temperatures. The CaP-coated SLA implants exhibited a slightly larger bone healing capacity in the self-contained coronal defect than SLA implants, indicating that combining SLA surface implants and a CaP coating by the IBAD method had synergistic effects on bone healing. There was no difference in the healing capacity between 350 degrees C and 450 degrees C heat treatment of the coating layer.

  10. Effects of calcium phosphate coating to SLA surface implants by the ion-beam-assisted deposition method on self-contained coronal defect healing in dogs

    International Nuclear Information System (INIS)

    The aim of this study was to evaluate the healing of self-contained coronal defects on a sand-blasted, large-grit, acid-etched (SLA) surface implant, which had a calcium phosphate (CaP) coating applied by ion-beam-assisted deposition (IBAD). We also evaluated the effect of heating the coating to different temperatures. The CaP-coated SLA implants exhibited a slightly larger bone healing capacity in the self-contained coronal defect than SLA implants, indicating that combining SLA surface implants and a CaP coating by the IBAD method had synergistic effects on bone healing. There was no difference in the healing capacity between 350 deg. C and 450 deg. C heat treatment of the coating layer.

  11. Sr flux stability against oxidation in oxide-molecular-beam-epitaxy environment: Flux, geometry, and pressure dependence

    International Nuclear Information System (INIS)

    Maintaining stable fluxes for multiple source elements is a challenging task when the source materials have significantly different oxygen affinities in a complex-oxide molecular-beam-epitaxy (MBE) environment. Considering that Sr is one of the most easily oxidized and widely used elements in various complex oxides, we took Sr as a probe to investigate the flux-stability problem in a number of different conditions. Source oxidation was less for higher flux, extended port geometry, and unmelted source shape. The extended port geometry also eliminated the flux transient after opening a source shutter as observed in the standard port. We also found that the source oxidation occurred more easily on the crucible wall than on the surface of the source material. Atomic oxygen, in spite of its stronger oxidation effectiveness, did not make any difference in source oxidation as compared to molecular oxygen in this geometry. Our results may provide a guide for solutions to the source oxidation problem in oxide-MBE system.

  12. A short pulse (7 μs FWHM) and high repetition rate (dc-5kHz) cantilever piezovalve for pulsed atomic and molecular beams

    International Nuclear Information System (INIS)

    In this paper we report on the design and operation of a novel piezovalve for the production of short pulsed atomic or molecular beams. The high speed valve operates on the principle of a cantilever piezo. The only moving part, besides the cantilever piezo itself, is a very small O-ring that forms the vacuum seal. The valve can operate continuous (dc) and in pulsed mode with the same drive electronics. Pulsed operation has been tested at repetition frequencies up to 5 kHz. The static deflection of the cantilever, as mounted in the valve body, was measured as a function of driving field strength with a confocal microscope. The deflection and high speed dynamical response of the cantilever can be easily changed and optimized for a particular nozzle diameter or repetition rate by a simple adjustment of the free cantilever length. Pulsed molecular beams with a full width at half maximum pulse width as low as 7 μs have been measured at a position 10 cm downstream of the nozzle exit. This represents a gas pulse with a length of only 10 mm making it well matched to for instance experiments using laser beams. Such a short pulse with 6 bar backing pressure behind a 150 μm nozzle releases about 1016 particles/pulse and the beam brightness was estimated to be 4x1022 particles/(s str). The short pulses of the cantilever piezovalve result in a much reduced gas load in the vacuum system. We demonstrate operation of the pulsed valve with skimmer in a single vacuum chamber pumped by a 520 l/s turbomolecular pump maintaining a pressure of 5x10-6 Torr, which is an excellent vacuum to have the strong and cold skimmed molecular beam interact with laser beams only 10 cm downstream of the nozzle to do velocity map slice imaging with a microchannel-plate imaging detector in a single chamber. The piezovalve produces cold and narrow (Δv/v=2%-3%) velocity distributions of molecules seeded in helium or neon at modest backing pressures of only 6 bar. The low gas load of the cantilever

  13. Molecular dynamics simulation of ion-beam-amorphization of Si, Ge and GaAs

    CERN Document Server

    Nord, J D; Keinonen, J

    2002-01-01

    We use molecular dynamics simulations to study ion-irradiation-induced amorphization in Si, Ge and GaAs using several different interatomic force models. We find that the coordination number is higher, and the average bond length longer, for the irradiated amorphous structures than for the molten ones in Si and Ge. For amorphous GaAs, we suggest that longer Ga-Ga bonds, also present in pure Ga, are produced during the irradiation. In Si the amorphization is found to proceed via growth of amorphous regions, and low energy recoils are found to induce athermal recrystallization during irradiation.

  14. A short pulse (7 μs FWHM) and high repetition rate (dc-5kHz) cantilever piezovalve for pulsed atomic and molecular beams

    NARCIS (Netherlands)

    Irimia, D.; Dobrikov, D.; Kortekaas, R.; Voet, H.; Ende, D.A. van den; Groen, W.A.; Janssen, M.H.M.

    2009-01-01

    In this paper we report on the design and operation of a novel piezovalve for the production of short pulsed atomic or molecular beams. The high speed valve operates on the principle of a cantilever piezo. The only moving part, besides the cantilever piezo itself, is a very small O-ring that forms t

  15. Soft X-ray-assisted detection method for airborne molecular contaminations (AMCs)

    Energy Technology Data Exchange (ETDEWEB)

    Kim, Changhyuk; Zuo, Zhili [University of Minnesota, Department of Mechanical Engineering (United States); Finger, Hartmut; Haep, Stefan; Asbach, Christof; Fissan, Heinz [Institute of Energy and Environmental Technology (IUTA e. V.) (Germany); Pui, David Y. H., E-mail: dyhpui@umn.edu [University of Minnesota, Department of Mechanical Engineering (United States)

    2015-03-15

    Airborne molecular contaminations (AMCs) represent a wide range of gaseous contaminants in cleanrooms. Due to the unintentional nanoparticle or haze formation as well as doping caused by AMCs, improved monitoring and controlling methods for AMCs are urgent in the semiconductor industry. However, measuring ultra-low concentrations of AMCs in cleanrooms is difficult, especially, behind a gas filter. In this study, a novel detection method for AMCs, which is on-line, economical, and applicable for diverse AMCs, was developed by employing gas-to-particle conversion with soft X-ray, and then measuring the generated nanoparticles. Feasibility study of this method was conducted through the evaluations of granular-activated carbons (GACs), which are widely used AMC filter media. Sulfur dioxide (SO{sub 2}) was used as an AMC for the feasibility study. Using this method, the ultra-low concentrations of SO{sub 2} behind GACs were determined in terms of concentrations of generated sulfuric acid (H{sub 2}SO{sub 4}) nanoparticles. By calculating SO{sub 2} concentrations from the nanoparticle concentrations using empirical correlation equations between them, remarkable sensitivity of this method to SO{sub 2} was shown, down to parts-per-trillions, which are too low to detect using commercial gas sensors. Also, the calculated SO{sub 2} concentrations showed good agreement with those measured simultaneously by a commercial SO{sub 2} monitor at parts-per-billions.

  16. Using Wavelet Analysis To Assist in Identification of Significant Events in Molecular Dynamics Simulations.

    Science.gov (United States)

    Heidari, Zahra; Roe, Daniel R; Galindo-Murillo, Rodrigo; Ghasemi, Jahan B; Cheatham, Thomas E

    2016-07-25

    Long time scale molecular dynamics (MD) simulations of biological systems are becoming increasingly commonplace due to the availability of both large-scale computational resources and significant advances in the underlying simulation methodologies. Therefore, it is useful to investigate and develop data mining and analysis techniques to quickly and efficiently extract the biologically relevant information from the incredible amount of generated data. Wavelet analysis (WA) is a technique that can quickly reveal significant motions during an MD simulation. Here, the application of WA on well-converged long time scale (tens of μs) simulations of a DNA helix is described. We show how WA combined with a simple clustering method can be used to identify both the physical and temporal locations of events with significant motion in MD trajectories. We also show that WA can not only distinguish and quantify the locations and time scales of significant motions, but by changing the maximum time scale of WA a more complete characterization of these motions can be obtained. This allows motions of different time scales to be identified or ignored as desired. PMID:27286268

  17. Reel-to-reel preparation of ion-beam assisted deposition (IBAD)-MgO based coated conductors

    International Nuclear Information System (INIS)

    We report on our efforts in developing and scaling-up the systems for IBAD-MgO based coated conductor fabrication. The overall fabrication process involves a number of different processes including: electropolishing of the substrates; barrier-layer, seed-layer, and IBAD-MgO deposition by e-beam evaporation; and pulsed laser deposition of buffer and YBCO layers. All processes are realized in reel-to-reel processing systems. Latest results have shown that the IBAD-MgO approach yields coated conductor performance comparable to the best results achieved elsewhere to date

  18. Reel-to-reel preparation of ion-beam assisted deposition (IBAD)-MgO based coated conductors

    Energy Technology Data Exchange (ETDEWEB)

    Kreiskott, Sascha; Arendt, Paul N; Coulter, J Yates; Dowden, Paul C; Foltyn, Stephen R; Gibbons, Brady J; Matias, Vladimir; Sheehan, Chris J [Superconductivity Technology Center, Los Alamos National Laboratory, Los Alamos, NM 87545 (United States)

    2004-05-01

    We report on our efforts in developing and scaling-up the systems for IBAD-MgO based coated conductor fabrication. The overall fabrication process involves a number of different processes including: electropolishing of the substrates; barrier-layer, seed-layer, and IBAD-MgO deposition by e-beam evaporation; and pulsed laser deposition of buffer and YBCO layers. All processes are realized in reel-to-reel processing systems. Latest results have shown that the IBAD-MgO approach yields coated conductor performance comparable to the best results achieved elsewhere to date.

  19. Effects of deposition conditions on gas-barrier performance of SiOxNy thin films formed via ion-beam-assisted vapor deposition

    International Nuclear Information System (INIS)

    SiOxNy thin films were synthesized via ion-beam-assisted vapor deposition (IVD) where deposition of SiOx was irradiated by nitrogen ions. Firstly, reasonable-cost evaporation materials showing less splashing for the SiOx films were investigated by selecting appropriate sintering condition regimes of Si and SiO2 mixed powders. The SiOxNy thin films on a polyethylene terephtalate film substrate obtained via IVD showed a low oxygen transmission rate (OTR) of less than 1 cm3/m2 day. Effective nitrogen ion irradiation energy per atom was 8 eV/at. or greater, which is consistent with regimes where densification of thin films is reported to occur. Higher N2 partial pressure yielded a lower OTR and a higher nitrogen atomic ratio of the films obtained. It is suggested that the improvement in gas-barrier performance resulted from densification and chemical change of the films due to energy addition and nitrification produced by nitrogen ion-beam irradiation

  20. Effusive molecular beam-sampled Knudsen flow reactor coupled to vacuum ultraviolet single photon ionization mass spectrometry using an external free radical source

    International Nuclear Information System (INIS)

    A new apparatus using vacuum ultraviolet single photon ionization mass spectrometry (VUV SPIMS) of an effusive molecular beam emanating from a Knudsen flow reactor is described. It was designed to study free radical-molecule kinetics over a significant temperature range (300–630 K). Its salient features are: (1) external free radical source, (2) counterpropagating molecular beam and diffuse VUV photon beam meeting in a crossed-beam ion source of a quadrupole mass spectrometer with perpendicular ion extraction, (3) analog detection of the photocurrent of the free radical molecular cation, and (4) possibility of detecting both free radicals and closed shell species in the same apparatus and under identical reaction conditions owing to the presence of photoelectrons generated by the photoelectric effect of the used VUV-photons. The measured thermal molecular beam-to-background ratio was 6.35 ± 0.39 for Ar and 10.86 ± 1.59 for i-C4H10 at 300 K, a factor of 2.52 and 1.50 smaller, respectively, than predicted from basic gas-dynamic considerations. Operating parameters as well as the performance of key elements of the instrument are presented and discussed. Coupled to an external free radical source a steady-state specific exit flow of 1.6 × 1011 and 5.0 × 1011 molecule s−1 cm−3 of C2H5• (ethyl) and t-C4H9• (t-butyl) free radicals have been detected using VUV SPIMS at their molecular ion m/z 29 and 57, respectively, at 300 K