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Sample records for assisted molecular beam

  1. Molecular beams

    International Nuclear Information System (INIS)

    This book is a timeless and rather complete theoretical and experimental treatment of electric and magnetic resonance molecular-beam experiments for studying the radio frequency spectra of atoms and molecules. The theory of interactions of the nucleus with atomic and molecular fields is extensively presented. Measurements of atomic and nuclear magnetic moments, electric multipole moments, and atomic fine and hyperfine structure are detailed. Useful but somewhat outdated chapters on gas kinetics, molecular beam design, and experimental techniques are also included

  2. Beam assisted molecular rearrangement observed by TDPAD for fluorine complexes in diamond

    Science.gov (United States)

    Sideras-Haddad, E.; Connell, S. H.; Sellschop, J. P. F.; Bharuth-Ram, K.; Stemmet, M. C.; Naidoo, S.; Appel, H.

    1992-02-01

    Time dependent perturbed angular distribution (TDPAD) measurements have consistently revealed two unique sites for recoil implanted 19F in different types of natural diamonds. These correspond to quadrupole coupling constants of 63(2) and 56(2) MHz. The first corresponds to the formation of a C-F bond at an intrabond site and the second is interpreted as a distorted substitutional site. A third resolved coupling constant of 33(3) MHz is associated with a broadly distributed site with random electric field gradient orientation which might be indicative of local amorphous conditions and is interpreted as arising from the formation of H-F molecular complexes. A strong dependence on the incident proton dose of this fraction has been observed for all types of natural diamonds. A model proposed for such an effect involves a beam-assisted mechanism which accounts for disruption of existing hydrogenic molecular complexes and rearrangement of ions under the influence of intense electronic excitation caused by the incident proton beam. Such results give new insights on 19F as a TDPAD probe. Its small size and chemical affinity render it particularly appropriate for studies of molecular complexes with TDPAD.

  3. Controlling crystal phases in GaAs nanowires grown by Au-assisted molecular beam epitaxy

    International Nuclear Information System (INIS)

    Control of the crystal phases of GaAs nanowires (NWs) is essential to eliminate the formation of stacking faults which deteriorate the optical and electronic properties of the NWs. In addition, the ability to control the crystal phase of NWs provides an opportunity to engineer the band gap without changing the crystal material. We show that the crystal phase of GaAs NWs grown on GaAs(111)B substrates by molecular beam epitaxy using the Au-assisted vapor–liquid–solid growth mechanism can be tuned between wurtzite (WZ) and zinc blende (ZB) by changing the V/III flux ratio. As an example we demonstrate the realization of WZ GaAs NWs with a ZB GaAs insert that has been grown without changing the substrate temperature. (paper)

  4. Si Incorporation in InP Nanowires Grown by Au-Assisted Molecular Beam Epitaxy

    Directory of Open Access Journals (Sweden)

    Lorenzo Rigutti

    2009-01-01

    Full Text Available We report on the growth, structural characterization, and conductivity studies of Si-doped InP nanowires grown by Au-assisted molecular beam epitaxy. It is shown that Si doping reduces the mean diffusion length of adatoms on the lateral nanowire surface and consequently reduces the nanowire growth rate and promotes lateral growth. A resistivity as low as 5.1±0.3×10−5 Ω⋅cm is measured for highly doped nanowires. Two dopant incorporation mechanisms are discussed: incorporation via catalyst particle and direct incorporation on the nanowire sidewalls. The first mechanism is shown to be less efficient than the second one, resulting in inhomogeneous radial dopant distribution.

  5. Nitride-based laser diodes grown by plasma-assisted molecular beam epitaxy

    International Nuclear Information System (INIS)

    The progress in the growth of nitride-based laser diodes (LDs) made by plasma-assisted molecular beam epitaxy (PAMBE) is reviewed. In this work we describe the GaN and InGaN growth peculiarities, p-type doping efficiency, and the properties of InGaN quantum wells (QWs) grown by PAMBE. We demonstrate continuous wave (cw) LDs operating in the range from 410 to 482 nm. These LDs were grown on low dislocation (0 0 0 1) c-plane bulk GaN substrate, which allow one to fabricate cw LDs with a lifetime exceeding 2000 h. Also, the ultraviolet LDs at 388 nm grown on (2 0 −2 1) semipolar substrates are discussed. The use of high active nitrogen fluxes up to 2 µm/h during the InGaN growth was essential for pushing the lasing wavelengths of PAMBE LDs above 460 nm. Recent advancement of InGaN growth by PAMBE allows one to demonstrate high-quality quantum QWs and excellent morphology for thick layers. We discuss the influence of LDs design on their parameters such as lasing threshold current and laser beam quality. (topical review)

  6. Growth of epitaxial ZnO films on sapphire substrates by plasma assisted molecular beam epitaxy

    Science.gov (United States)

    Hyndman, Adam R.; Allen, Martin W.; Reeves, Roger J.

    2014-03-01

    Epitaxial layers of ZnO have been grown on c-plane, (0001) sapphire substrates by plasma assisted molecular beam epitaxy. The oxygen:zinc flux ratio was found to be crucial in obtaining a film with a smooth surface and good crystallinity. When increasing film thickness from ~80 to 220 nm we observed an increase in the streakiness of RHEED images, and XRD revealed a reduction in crystal strain and increase in crystal alignment. A film with surface roughness of 0.5 nm and a XRD rocking curve FWHM of 0.1 for the main ZnO peak (0002) was achieved by depositing a low temperature ZnO buffer layer at 450 °C and then growing for 120 minutes at 700 °C with a Zn-cell temperature of 320 °C and an oxygen partial pressure of 7e-7 Torr. We found novel structures on two samples grown outside of our ideal oxygen:zinc flux ratio. SEM images of a sample believed to have been grown in a Zn-rich environment showed flower like structures up to 150 um in diameter which appear to have formed during growth. Another sample believed to have been deposited in a Zn-deficient environment had rings approximately 1.5 um in diameter scattered on its surface.

  7. Palladium assisted hetroepitaxial growth of an InAs nanowire by molecular beam epitaxy

    International Nuclear Information System (INIS)

    The palladium (Pd) assisted epitaxial growth of technologically important InAs nanowires grown on GaAs{111}B substrates using molecular beam epitaxy is reported. The grown free-standing InAs nanowires adapted a vapor–liquid–solid growth mechanism. The impacts of the catalyst particle density, growth temperature and input V/III precursor ratio have been investigated to identify better growth conditions for getting high-density non-<111>-orientated InAs nanowires. We assert here that two kind of nanowires are observed, one having a pure zinc-blende crystalline structure free of stacking faults, and the other with a defect-free wurtzite crystalline structure. However, few of them have defect imperfections too. The L- and Y-shaped nanowires confirm similar surface free energies for possible <110> growth directions. These unusual growth directions are attributed to the effect of the catalyst material as well as the surface-induced strain at the interface between the grown nanowires with substrates. The structural features of the grown nanowires are studied by employing scanning and transmission electron microscopic techniques. The obtained TEM results confirm that the nanowire catalyst interface is not a straightforward zinc-blende structured nanowire. Energy dispersive x-ray (EDX) analysis reveals that the tip of the grown nanowires with the chemical composition of Pd and In have a nearly 50:50 ratio, while the nanowire body did not have any catalyst traces other than the composition of InAs for both type of nanowires. The obtained high angle annular dark field (HAADF) TEM image for both types of nanowires along with the intensity profile provided evidence for cubic as well as hexagonal facets. (paper)

  8. Effect of growth temperature on defects in epitaxial GaN film grown by plasma assisted molecular beam epitaxy

    OpenAIRE

    S. S. Kushvaha; P.Pal; Shukla, A. K.; Joshi, Amish G; Govind Gupta; M. Kumar; Singh, S.; Bipin K. Gupta; Haranath, D.

    2014-01-01

    We report the effect of growth temperature on defect states of GaN epitaxial layers grown on 3.5 μm thick GaN epi-layer on sapphire (0001) substrates using plasma assisted molecular beam epitaxy. The GaN samples grown at three different substrate temperatures at 730, 740 and 750 °C were characterized using atomic force microscopy and photoluminescence spectroscopy. The atomic force microscopy images of these samples show the presence of small surface and large hexagonal pits on the GaN film s...

  9. InN nanorods prepared with CrN nanoislands by plasma-assisted molecular beam epitaxy

    OpenAIRE

    Young Sheng-Joue; Wu Ya-Ling; Chen Yue-Zhang; Hung Hung; Wang Shih-Ming; Chen Kuan-Jen; Liu Kuang-Wei; Chang Shoou-Jinn; Hsueh Tao-Hung; Mai Yu-Chun

    2011-01-01

    Abstract The authors report the influence of CrN nanoisland inserted on growth of baseball-bat InN nanorods by plasma-assisted molecular beam epitaxy under In-rich conditions. By inserting CrN nanoislands between AlN nucleation layer and the Si (111) substrate, it was found that we could reduce strain form Si by inserting CrN nanoisland, FWHM of the x-ray rocking curve measured from InN nanorods from 3,299 reduced to 2,115 arcsec. It is due to the larger strain from lattice miss-match of the ...

  10. Growth of Gold-assisted Gallium Arsenide Nanowires on Silicon Substrates via Molecular Beam Epitaxy

    Directory of Open Access Journals (Sweden)

    Ramon M. delos Santos

    2008-06-01

    Full Text Available Gallium arsenide nanowires were grown on silicon (100 substrates by what is called the vapor-liquid-solid (VLS growth mechanism using a molecular beam epitaxy (MBE system. Good quality nanowires with surface density of approximately 108 nanowires per square centimeter were produced by utilizing gold nanoparticles, with density of 1011 nanoparticles per square centimeter, as catalysts for nanowire growth. X-ray diffraction measurements, scanning electron microscopy, transmission electron microscopy and Raman spectroscopy revealed that the nanowires are epitaxially grown on the silicon substrates, are oriented along the [111] direction and have cubic zincblende structure.

  11. Vacancy-type defects in Si-doped InN grown by plasma-assisted molecular-beam epitaxy probed using monoenergetic positron beams

    International Nuclear Information System (INIS)

    High-quality InN layers grown on sapphire substrates by plasma-assisted molecular-beam epitaxy were characterized using monoenergetic positron beams. The carrier concentrations of the films were controlled by Si doping (2.1x1018 to 1.4x1019 cm-3), and the highest obtained Hall mobility was 1300 cm2 V-1 s-1. The Doppler broadening spectra of the annihilation radiation and the lifetime spectra of positrons were measured as a function of the incident positron energy for undoped and Si-doped InN films. The line-shape parameter S increased with increasing carrier concentration, suggesting the introduction of vacancy-type defects by a Fermi-level effect. The major defect species were varied with carrier concentration, and its species were identified as In vacancies (VIn) or their related defects

  12. Plasma-assisted molecular beam epitaxy of (11-22)-oriented 3-nitrides

    International Nuclear Information System (INIS)

    This work reports on the molecular-beam epitaxial growth of (1122)-oriented semi-polar nitride semiconductors using m-sapphire substrates. The (1122) crystallographic orientation is predefined by AlN deposition on m-sapphire under N excess. On top of this AlN buffer layer, undoped or Si-doped two-dimensional GaN(1122) films are formed under Ga-rich conditions, with a stabilized Ga-excess ad-layer of about 1.05±0.10 ML. In contrast, Mg tends to segregate on the GaN surface, inhibiting the self-regulated Ga excess film. Nevertheless, uniform Mg incorporation can be obtained, and p-type conductivity was achieved. GaN/AlN quantum wells are synthesized by deposition of the binary compounds under the above-described conditions. In the case of GaN/AlN quantum dots, the three-dimensional transition is induced by a growth interruption under vacuum. The reduction of the internal electric field in GaN/AlN nano-structures is confirmed by the blue shift of the photoluminescence spectrum and by the short photoluminescence decay times measured at low temperature. These results are consistent with theoretical calculations of the electronic structure. (author)

  13. Photoelectron photoion molecular beam spectroscopy

    International Nuclear Information System (INIS)

    The use of supersonic molecular beams in photoionization mass spectroscopy and photoelectron spectroscopy to assist in the understanding of photoexcitation in the vacuum ultraviolet is described. Rotational relaxation and condensation due to supersonic expansion were shown to offer new possibilities for molecular photoionization studies. Molecular beam photoionization mass spectroscopy has been extended above 21 eV photon energy by the use of Stanford Synchrotron Radiation Laboratory (SSRL) facilities. Design considerations are discussed that have advanced the state-of-the-art in high resolution vuv photoelectron spectroscopy. To extend gas-phase studies to 160 eV photon energy, a windowless vuv-xuv beam line design is proposed

  14. Room temperature Ultraviolet B emission from InAlGaN films synthesized by plasma-assisted molecular beam epitaxy

    Energy Technology Data Exchange (ETDEWEB)

    Kong, W., E-mail: wei.kong@duke.edu; Jiao, W. Y.; Kim, T. H.; Brown, A. S. [Department of Electrical and Computer Engineering, Duke University, Durham, North Carolina 27708 (United States); Roberts, A. T. [Charles Bowden Laboratory, Army Aviation and Missile RD& E Center, Redstone Arsenal, Alabama 35898 (United States); Fournelle, J. [Department of Geoscience, University of Wisconsin, Madison, Wisconsin 53706 (United States); Losurdo, M. [CNR-NANOTEC, Istituto di Nanotecnologia, via Orabona, 4-70126 Bari (Italy); Everitt, H. O. [Charles Bowden Laboratory, Army Aviation and Missile RD& E Center, Redstone Arsenal, Alabama 35898 (United States); Department of Physics, Duke University, Durham, North Carolina 27708 (United States)

    2015-09-28

    Thin films of the wide bandgap quaternary semiconductor In{sub x}Al{sub y}Ga{sub (1−x−y)}N with low In (x = 0.01–0.05) and high Al composition (y = 0.40–0.49) were synthesized on GaN templates by plasma-assisted molecular beam epitaxy. High-resolution X-ray diffraction was used to correlate the strain accommodation of the films to composition. Room temperature ultraviolet B (280 nm–320 nm) photoluminescence intensity increased with increasing In composition, while the Stokes shift remained relatively constant. The data suggest a competition between radiative and non-radiative recombination occurs for carriers, respectively, localized at centers produced by In incorporation and at dislocations produced by strain relaxation.

  15. The growth of III-V nitrides heterostructure on Si substrate by plasma-assisted molecular beam epitaxy

    International Nuclear Information System (INIS)

    This paper reports the growth of InGaN/GaN/AlN epitaxial layer on Si(1 1 1) substrate by utilizing plasma-assisted molecular beam epitaxy (PA-MBE) system. The as-grown film was characterized using high-resolution X-ray diffraction (HR-XRD) and photoluminescence (PL). High work function metals, iridium and gold were deposited on the film as metal contacts and their electrical characteristics at pre- and post-annealing were studied. The structural quality of this film is comparative to the values reported in the literature, and the indium molar fraction is 0.57 by employing Vegard's law. The relatively low yellow band emission signifies the grown film is of high quality. For metal contact studies it was found that the post-annealed sample for 5 min shows good conductivity as compared to the other samples.

  16. Direct growth of graphene on in situ epitaxial hexagonal boron nitride flakes by plasma-assisted molecular beam epitaxy

    Energy Technology Data Exchange (ETDEWEB)

    Xu, Zhongguang; Zheng, Renjing; Khanaki, Alireza; Zuo, Zheng; Liu, Jianlin, E-mail: jianlin@ece.ucr.edu [Quantum Structures Laboratory, Department of Electrical and Computer Engineering, University of California, Riverside, California 92521 (United States)

    2015-11-23

    Hexagonal boron nitride (h-BN) single-crystal domains were grown on cobalt (Co) substrates at a substrate temperature of 850–900 °C using plasma-assisted molecular beam epitaxy. Three-point star shape h-BN domains were observed by scanning electron microscopy, and confirmed by Raman and X-ray photoelectron spectroscopy. The h-BN on Co template was used for in situ growth of multilayer graphene, leading to an h-BN/graphene heterostructure. Carbon atoms preferentially nucleate on Co substrate and edges of h-BN and then grow laterally to form continuous graphene. Further introduction of carbon atoms results in layer-by-layer growth of graphene on graphene and lateral growth of graphene on h-BN until it may cover entire h-BN flakes.

  17. Direct growth of graphene on in situ epitaxial hexagonal boron nitride flakes by plasma-assisted molecular beam epitaxy

    International Nuclear Information System (INIS)

    Hexagonal boron nitride (h-BN) single-crystal domains were grown on cobalt (Co) substrates at a substrate temperature of 850–900 °C using plasma-assisted molecular beam epitaxy. Three-point star shape h-BN domains were observed by scanning electron microscopy, and confirmed by Raman and X-ray photoelectron spectroscopy. The h-BN on Co template was used for in situ growth of multilayer graphene, leading to an h-BN/graphene heterostructure. Carbon atoms preferentially nucleate on Co substrate and edges of h-BN and then grow laterally to form continuous graphene. Further introduction of carbon atoms results in layer-by-layer growth of graphene on graphene and lateral growth of graphene on h-BN until it may cover entire h-BN flakes

  18. Mg incorporation in GaN grown by plasma-assisted molecular beam epitaxy at high temperatures

    Science.gov (United States)

    Yang, W. C.; Lee, P. Y.; Tseng, H. Y.; Lin, C. W.; Tseng, Y. T.; Cheng, K. Y.

    2016-04-01

    The influence of growth conditions on the incorporation and activation of Mg in GaN grown by plasma-assisted molecular beam epitaxy at high growth temperature (>700 °C) is presented. It is found that the highest Mg incorporation with optimized electrical properties is highly sensitive both to the Mg/Ga flux ratio and III/V flux ratio. A maximum Mg activation of ~5% can be achieved at a growth temperature of 750 °C. The lowest resistivity achieved is 0.56 Ω-cm which is associated with a high hole mobility of 6.42 cm2/V-s and a moderately high hole concentration of 1.7×1018 cm-3. Although the highest hole concentration achieved in a sample grown under a low III/V flux ratio and a high Mg/Ga flux ratio reaches 7.5×1018 cm-3, the mobility is suffered due to the formation of defects by the excess Mg. In addition, we show that modulated beam growth methods do not enhance Mg incorporation at high growth temperature in contrast to those grown at a low temperature of 500 °C (Appl. Phys. Lett. 93, 172112, Namkoong et al., 2008 [19]).

  19. Epitaxial growth of M-plane GaN on ZnO micro-rods by plasma-assisted molecular beam epitaxy

    OpenAIRE

    Shuo-Ting You; Ikai Lo; Jenn-Kai Tsai; Cheng-Hung Shih

    2015-01-01

    We have studied the GaN grown on ZnO micro-rods by plasma-assisted molecular beam epitaxy. From the analyses of GaN microstructure grown on non-polar M-plane ZnO surface ( 10 1 ̄ 0 ) by scanning transmission electron microscope, we found t...

  20. Semipolar and nonpolar GaN epi-films grown on m-sapphire by plasma assisted molecular beam epitaxy

    International Nuclear Information System (INIS)

    We hereby report the development of non-polar epi-GaN films of usable quality, on an m-plane sapphire. Generally, it is difficult to obtain high-quality nonpolar material due to the planar anisotropic nature of the growth mode. However, we could achieve good quality epi-GaN films by involving controlled steps of nitridation. GaN epilayers were grown on m-plane (10-10) sapphire substrates using plasma assisted molecular beam epitaxy. The films grown on the nitridated surface resulted in a nonpolar (10-10) orientation while without nitridation caused a semipolar (11-22) orientation. Room temperature photoluminescence study showed that nonpolar GaN films have higher value of compressive strain as compared to semipolar GaN films, which was further confirmed by room temperature Raman spectroscopy. The room temperature UV photodetection of both films was investigated by measuring the I-V characteristics under UV light illumination. UV photodetectors fabricated on nonpolar GaN showed better characteristics, including higher external quantum efficiency, compared to photodetectors fabricated on semipolar GaN. X-ray rocking curves confirmed better crystallinity of semipolar as compared to nonpolar GaN which resulted in faster transit response of the device

  1. Direct growth of hexagonal boron nitride/graphene heterostructures on cobalt foil substrates by plasma-assisted molecular beam epitaxy

    Science.gov (United States)

    Xu, Zhongguang; Khanaki, Alireza; Tian, Hao; Zheng, Renjing; Suja, Mohammad; Zheng, Jian-Guo; Liu, Jianlin

    2016-07-01

    Graphene/hexagonal boron nitride (G/h-BN) heterostructures have attracted a great deal of attention because of their exceptional properties and wide variety of potential applications in nanoelectronics. However, direct growth of large-area, high-quality, and stacked structures in a controllable and scalable way remains challenging. In this work, we demonstrate the synthesis of h-BN/graphene (h-BN/G) heterostructures on cobalt (Co) foil by sequential deposition of graphene and h-BN layers using plasma-assisted molecular beam epitaxy. It is found that the coverage of h-BN layers can be readily controlled on the epitaxial graphene by growth time. Large-area, uniform-quality, and multi-layer h-BN films on thin graphite layers were achieved. Based on an h-BN (5-6 nm)/G (26-27 nm) heterostructure, capacitor devices with Co(foil)/G/h-BN/Co(contact) configuration were fabricated to evaluate the dielectric properties of h-BN. The measured breakdown electric field showed a high value of ˜2.5-3.2 MV/cm. Both I-V and C-V characteristics indicate that the epitaxial h-BN film has good insulating characteristics.

  2. Effect of growth temperature on defects in epitaxial GaN film grown by plasma assisted molecular beam epitaxy

    Directory of Open Access Journals (Sweden)

    S. S. Kushvaha

    2014-02-01

    Full Text Available We report the effect of growth temperature on defect states of GaN epitaxial layers grown on 3.5 μm thick GaN epi-layer on sapphire (0001 substrates using plasma assisted molecular beam epitaxy. The GaN samples grown at three different substrate temperatures at 730, 740 and 750 °C were characterized using atomic force microscopy and photoluminescence spectroscopy. The atomic force microscopy images of these samples show the presence of small surface and large hexagonal pits on the GaN film surfaces. The surface defect density of high temperature grown sample is smaller (4.0 × 108 cm−2 at 750 °C than that of the low temperature grown sample (1.1 × 109 cm−2 at 730 °C. A correlation between growth temperature and concentration of deep centre defect states from photoluminescence spectra is also presented. The GaN film grown at 750 °C exhibits the lowest defect concentration which confirms that the growth temperature strongly influences the surface morphology and affects the optical properties of the GaN epitaxial films.

  3. Structural and magnetic characterization of Sm-doped GaN grown by plasma-assisted molecular beam epitaxy

    Science.gov (United States)

    Dehara, Kentaro; Miyazaki, Yuta; Hasegawa, Shigehiko

    2016-05-01

    We have investigated structural, optical and magnetic properties of Sm-doped GaN thin films grown by plasma-assisted molecular beam epitaxy. Reflection high-energy electron diffraction and X-ray diffraction reveal that Ga1- x Sm x N films with a SmN mole fraction of ˜8% or below are grown on GaN templates without segregation of any secondary phases. With increasing SmN mole fraction, the c-axis lattice parameter of the GaSmN films linearly increases. GaSmN films with low Sm concentrations exhibit inner-4f transitions of Sm3+ in photoluminescence spectra. The present findings show that Sm atoms are substituted for some Ga atoms as trivalent ions (Sm3+). The Ga1- x Sm x N films display hysteresis loops in magnetization versus external magnetic field (M-H) curves even at 300 K. We will discuss the origin of these features together with the corresponding temperature dependences of magnetization.

  4. InN nanorods prepared with CrN nanoislands by plasma-assisted molecular beam epitaxy

    Directory of Open Access Journals (Sweden)

    Young Sheng-Joue

    2011-01-01

    Full Text Available Abstract The authors report the influence of CrN nanoisland inserted on growth of baseball-bat InN nanorods by plasma-assisted molecular beam epitaxy under In-rich conditions. By inserting CrN nanoislands between AlN nucleation layer and the Si (111 substrate, it was found that we could reduce strain form Si by inserting CrN nanoisland, FWHM of the x-ray rocking curve measured from InN nanorods from 3,299 reduced to 2,115 arcsec. It is due to the larger strain from lattice miss-match of the film-like InN structure; however, the strain from lattice miss-match was obvious reduced owing to CrN nanoisland inserted. The TEM images confirmed the CrN structures and In droplets dissociation from InN, by these results, we can speculate the growth mechanism of baseball-bat-like InN nanorods.

  5. Ion beam assisted film growth

    CERN Document Server

    Itoh, T

    2012-01-01

    This volume provides up to date information on the experimental, theoretical and technological aspects of film growth assisted by ion beams.Ion beam assisted film growth is one of the most effective techniques in aiding the growth of high-quality thin solid films in a controlled way. Moreover, ion beams play a dominant role in the reduction of the growth temperature of thin films of high melting point materials. In this way, ion beams make a considerable and complex contribution to film growth. The volume will be essential reading for scientists, engineers and students working in thi

  6. Carbon doping of GaN with CBr4 in radio-frequency plasma-assisted molecular beam epitaxy

    OpenAIRE

    Green, D S; Mishra, U. K.; Speck, J.S.

    2004-01-01

    Carbon tetrabromide (CBr4) was studied as an intentional dopant during rf plasma molecular beam epitaxy of GaN. Secondary ion mass spectroscopy was used to quantify incorporation behavior. Carbon was found to readily incorporate under Ga-rich and N-rich growth conditions with no detectable bromine incorporation. The carbon incorporation [C] was found to be linearly related to the incident CBr4 flux. Reflection high-energy electron diffraction, atomic force microscopy and x-ray diffraction wer...

  7. Molecular beam epitaxy

    CERN Document Server

    Pamplin, Brian R

    1980-01-01

    Molecular Beam Epitaxy introduces the reader to the use of molecular beam epitaxy (MBE) in the generation of III-V and IV-VI compounds and alloys and describes the semiconductor and integrated optics reasons for using the technique. Topics covered include semiconductor superlattices by MBE; design considerations for MBE systems; periodic doping structure in gallium arsenide (GaAs); nonstoichiometry and carrier concentration control in MBE of compound semiconductors; and MBE techniques for IV-VI optoelectronic devices. The use of MBE to fabricate integrated optical devices and to study semicond

  8. The study of in situ scanning tunnelling microscope characterization on GaN thin film grown by plasma assisted molecular beam epitaxy

    International Nuclear Information System (INIS)

    The epitaxial growth of GaN by Plasma Assisted Molecular Beam Epitaxy was investigated by Scanning Tunnelling Microscope (STM). The GaN film was grown on initial GaN (0001) and monitored by in situ Reflection High Energy Electron Diffraction and STM during the growth. The STM characterization was carried out on different sub-films with increased thickness. The growth of GaN was achieved in 3D mode, and the hexagonal edge of GaN layers and growth gradient were observed. The final GaN was of Ga polarity and kept as (0001) orientation, without excess Ga adlayers or droplets formed on the surface.

  9. Analysis of Mg content of Zn1-xMgxO film grown on sapphire substrates by plasma-assisted molecular beam epitaxy

    Institute of Scientific and Technical Information of China (English)

    YAN Fengping; JIAN Shuisheng; K. Ogata; K. Koike; S. Sasa; M. Inoue; M. Yano

    2004-01-01

    The Mg content of Zn1-xMgxO film grown on A-sapphire substrates by plasma-assisted molecular beam epitaxy is measured by inductively coupled plasma (ICP)and electronic probe microanalysis (EPMA). A theoretical model for analyzing the difference in the Mg content between Zn-rich and Zn-deficient conditions in the growth process is established, and the mathematical relation between Mg content and the temperature of the Mg cell is formulated under Zn-rich condition. The formula derived is proven to be correct by experiments.

  10. Structural, Optical and Electrical Properties of n-type GaN on Si (111) Grown by RF-plasma assisted Molecular Beam Epitaxy

    International Nuclear Information System (INIS)

    In this paper, we present the study of the structural, optical and electrical of n-type GaN grown on silicon (111) by RF plasma-assisted molecular beam epitaxy (RF-MBE). X-ray diffraction (XRD) measurement reveals that the GaN was epitaxially grown on silicon. For the photoluminescence (PL) measurement, a sharp and intense peak at 364.5 nm indicates that the sample is of high optical quality. Hall effect measurement shows that the film has a carrier concentration of 3.28x1019 cm-3. The surface of the n-type GaN was smooth and no any cracks and pits

  11. Molecular beam epitaxy of GaAs nanowires and their sustainability for optoelectronic applications. Comparing Au- and self-assisted growth methods

    Energy Technology Data Exchange (ETDEWEB)

    Breuer, Steffen

    2011-09-28

    In this work the synthesis of GaAs nanowires by molecular beam epitaxy (MBE) using the vapour-liquid-solid (VLS) mechanism is investigated. A comparison between Au- and self-assisted VLS growth is at the centre of this thesis. While the Au-assisted method is established as a versatile tool for nanowire growth, the recently developed self-assisted variation results from the exchange of Au by Ga droplets and thus eliminates any possibility of Au incorporation. By both methods, we achieve nanowires with epitaxial alignment to the Si(111) substrates. Caused by differences during nanowire nucleation, a parasitic planar layer grows between the nanowires by the Au-assisted method, but can be avoided by the self-assisted method. Au-assisted nanowires grow predominantly in the metastable wurtzite crystal structure, while their self-assisted counterparts have the zincblende structure. All GaAs nanowires are fully relaxed and the strain arising from the lattice mismatch between GaAs and Si of 4.1 % is accommodated by misfit dislocations at the interface. Self-assisted GaAs nanowires are generally found to have vertical and non-polar side facets, while tilted and polar nanofacets were described for Au-assisted GaAs nanowires. We employ VLS nucleation theory to understand the effect of the droplet material on the lateral facets. Optoelectronic applications require long minority carrier lifetimes at room temperature. We fabricate GaAs/(Al,Ga)As core-shell nanowires and analyse them by transient photoluminescence (PL) spectroscopy. The results are 2.5 ns for the self-assisted nanowires as well as 9 ps for the Au-assisted nanowires. By temperature-dependent PL measurements we find a characteristic activation energy of 77 meV that is present only in the Au-assisted nanowires. We conclude that most likely Au is incorporated from the droplets into the GaAs nanowires and acts as a deep, non-radiative recombination centre.

  12. Molecular-beam scattering

    Energy Technology Data Exchange (ETDEWEB)

    Vernon, M.F.

    1983-07-01

    The molecular-beam technique has been used in three different experimental arrangements to study a wide range of inter-atomic and molecular forces. Chapter 1 reports results of a low-energy (0.2 kcal/mole) elastic-scattering study of the He-Ar pair potential. The purpose of the study was to accurately characterize the shape of the potential in the well region, by scattering slow He atoms produced by expanding a mixture of He in N/sub 2/ from a cooled nozzle. Chapter 2 contains measurements of the vibrational predissociation spectra and product translational energy for clusters of water, benzene, and ammonia. The experiments show that most of the product energy remains in the internal molecular motions. Chapter 3 presents measurements of the reaction Na + HCl ..-->.. NaCl + H at collision energies of 5.38 and 19.4 kcal/mole. This is the first study to resolve both scattering angle and velocity for the reaction of a short lived (16 nsec) electronic excited state. Descriptions are given of computer programs written to analyze molecular-beam expansions to extract information characterizing their velocity distributions, and to calculate accurate laboratory elastic-scattering differential cross sections accounting for the finite apparatus resolution. Experimental results which attempted to determine the efficiency of optically pumping the Li(2/sup 2/P/sub 3/2/) and Na(3/sup 2/P/sub 3/2/) excited states are given. A simple three-level model for predicting the steady-state fraction of atoms in the excited state is included.

  13. Molecular-beam scattering

    International Nuclear Information System (INIS)

    The molecular-beam technique has been used in three different experimental arrangements to study a wide range of inter-atomic and molecular forces. Chapter 1 reports results of a low-energy (0.2 kcal/mole) elastic-scattering study of the He-Ar pair potential. The purpose of the study was to accurately characterize the shape of the potential in the well region, by scattering slow He atoms produced by expanding a mixture of He in N2 from a cooled nozzle. Chapter 2 contains measurements of the vibrational predissociation spectra and product translational energy for clusters of water, benzene, and ammonia. The experiments show that most of the product energy remains in the internal molecular motions. Chapter 3 presents measurements of the reaction Na + HCl → NaCl + H at collision energies of 5.38 and 19.4 kcal/mole. This is the first study to resolve both scattering angle and velocity for the reaction of a short lived (16 nsec) electronic excited state. Descriptions are given of computer programs written to analyze molecular-beam expansions to extract information characterizing their velocity distributions, and to calculate accurate laboratory elastic-scattering differential cross sections accounting for the finite apparatus resolution. Experimental results which attempted to determine the efficiency of optically pumping the Li(22P/sub 3/2/) and Na(32P/sub 3/2/) excited states are given. A simple three-level model for predicting the steady-state fraction of atoms in the excited state is included

  14. Effects of Rapid Thermal Annealing on Optical Properties of GaInNAs/GaAs Single Quantum Well Grown by Plasma-Assisted Molecular Beam Epitaxy

    Institute of Scientific and Technical Information of China (English)

    2000-01-01

    The effects of Rapid Thermal Annealing (RTA) on the optical properties of GaInNAs/GaAs Single Quantum Well (SQW) grown by plasma-assisted molecular beam epitaxy are investigated. Ion removal magnets were applied to reduce the ion damage during the growth process and the optical properties of GaInNAs/GaAs SQW are remarkably improved.RTA was carried out at 650℃ and its effect was studied by the comparising the roomtemperature PhotoLuminescence (PL) spectra for the non ion-removed (grown without magnets) sample with for the ion-removed (grown with magnets) one. The more significant improvement of PL characteristics for non ion-removed GaInNAs/GaAs SQW after annealing (compared with those for ion-removed) indicates that the nonradiative centers removed by RTA at 650℃ are mainly originated from ion damage. After annealing the PL blue shift for non ionremoved GaInNAs/GaAs SQW is much larger than those for InGaAs/GaAs and ion-removed GaInNAs/GaAs SQW. It is found that the larger PL blue shift of GaInNAs/GaAs SQW is due to the defect-assisted In-Ga interdiffusion rather than defect-assisted N-As interdiffusion.

  15. Structural properties of InN films grown on O-face ZnO(0001) by plasma-assisted molecular beam epitaxy

    Energy Technology Data Exchange (ETDEWEB)

    Cho, Yong Jin; Brandt, Oliver; Kaganer, Vladimir M.; Ramsteiner, Manfred; Riechert, Henning [Paul-Drude-Institut fuer Festkoerperelektronik, Hausvogteiplatz 5-7, 10117 Berlin (Germany); Korytov, Maxim; Albrecht, Martin [Leibniz-Institut fuer Kristallzuechtung, Max-Born-Str. 2, 12489 Berlin (Germany)

    2012-04-09

    We study the impact of substrate temperature and layer thickness on the morphological and structural properties of InN films directly grown on O-face ZnO(0001) substrates by plasma-assisted molecular beam epitaxy. With increasing substrate temperature, an interfacial reaction between InN and ZnO takes place that eventually results in the formation of cubic In{sub 2}O{sub 3} and voids. The properties of the InN films, however, are found to be unaffected by this reaction for substrate temperatures less than 550 deg. C. In fact, both the morphological and the structural quality of InN improve with increasing substrate temperature in the range from 350 to 500 deg. C. High quality films with low threading dislocation densities are demonstrated.

  16. Self-assembled flower-like nanostructures of InN and GaN grown by plasma-assisted molecular beam epitaxy

    Indian Academy of Sciences (India)

    Mahesh Kumar; T N Bhat; M K Rajpalke; B Roul; P Misra; L M Kukreja; Neeraj Sinha; A T Kalghatgi; S B Krupanidhi

    2010-06-01

    Nanosized hexagonal InN flower-like structures were fabricated by droplet epitaxy on GaN/Si(111) and GaN flower-like nanostructure fabricated directly on Si(111) substrate using radio frequency plasma-assisted molecular beam epitaxy. Powder X-ray diffraction (XRD) and scanning electron microscopy (SEM) were used to study the crystallinity and morphology of the nanostructures. Moreover, X-ray photoelectron spectroscopy (XPS) and photoluminescence (PL) were used to investigate the chemical compositions and optical properties of nano-flowers, respectively. Activation energy of free exciton transitions in GaN nano-flowers was derived to be ∼ 28.5 meV from the temperature dependent PL studies. The formation process of nanoflowers is investigated and a qualitative mechanism is proposed.

  17. Epitaxial growth of M-plane GaN on ZnO micro-rods by plasma-assisted molecular beam epitaxy

    Directory of Open Access Journals (Sweden)

    Shuo-Ting You

    2015-12-01

    Full Text Available We have studied the GaN grown on ZnO micro-rods by plasma-assisted molecular beam epitaxy. From the analyses of GaN microstructure grown on non-polar M-plane ZnO surface ( 10 1 ̄ 0 by scanning transmission electron microscope, we found that the ZnGa2O4 compound was formed at the M-plane hetero-interface, which was confirmed by polarization-dependent photoluminescence. We demonstrated that the M-plane ZnO micro-rod surface can be used as an alternative substrate to grow high quality M-plane GaN epi-layers.

  18. Growth and stuctural characterization of InGaN layers with controlled In content prepared by plasma-assisted molecular beam epitaxy

    International Nuclear Information System (INIS)

    InGaN layers with controlled In composition up to 30 at.% are grown on c-plane sapphire substrates by plasma-assisted molecular beam epitaxy. By considering the growth rate differences in GaN and InN caused by different vapor pressure and sticking coefficient, factors of the Ga and In source fluxes for the targeted In composition are determined. By applying the factors, InGaN layers with the almost same In compositions are grown. Before the growth the substrates were nitrided by rf-nitrogen plasma, which resulted in the formation of epitaxial AlN layer. The growth of thin GaN on this AlN surface shows strong streaky reflection high energy electron diffraction pattern with a specular spot, however, InGaN layers on the GaN layer show spotty patterns. Surface morphology of the InGaN layers shows island-like granules and the granule-like morphology is getting clear as the In composition and roughness are increased, too. The InGaN layers with In composition up to 30 at.% do not show formation of InN and only InGaN peaks are detected from the X-ray diffraction. Crystal quality of the InGaN layer with In composition of 15 at.% is worse than that of 30 at.%-In layer as addressed by larger broadening of X-ray rocking curves. - Highlights: ► Growth of InGaN epilayers by molecular beam epitaxy ► InGaN epilayers with In content up to 30 at.% without secondary phase formation. ► Controlled In content to the targeted content from the experimental set-up. ► Nitridation process of sapphire substrate to formed epitaxial AlN layer. ► Growth mode and structural characterization of InGaN layers

  19. Growth of ZnO(0001) on GaN(0001)/4H-SiC buffer layers by plasma-assisted hybrid molecular beam epitaxy

    Science.gov (United States)

    Adolph, David; Tingberg, Tobias; Ive, Tommy

    2015-09-01

    Plasma-assisted molecular beam epitaxy was used to grow ZnO(0001) layers on GaN(0001)/4H-SiC buffer layers deposited in the same growth chamber equipped with both N- and O-plasma sources. The GaN buffer layers were grown immediately before initiating the growth of ZnO. Using a substrate temperature of 445 °C and an O2 flow rate of 2.5 standard cubic centimeters per minute, we obtained ZnO layers with statistically smooth surfaces having a root-mean-square roughness of 0.3 nm and a peak-to-valley distance of 3 nm as revealed by atomic force microscopy. The full-width-at-half-maximum for x-ray rocking curves obtained across the ZnO(0002) and ZnO(10 1 bar 5) reflections was 198 and 948 arcsec, respectively. These values indicated that the mosaicity of the ZnO layer was comparable to the corresponding values of the underlying GaN buffer layer. Reciprocal space maps showed that the in-plane relaxation of the GaN and ZnO layers was 82% and 73%, respectively, and that the relaxation occurred abruptly during the growth. Room-temperature Hall-effect measurements revealed that the layers were inherently n-type and had an electron concentration of 1×1019 cm-3 and a Hall mobility of 51 cm2/V s.

  20. Effects of RF plasma parameters on the growth of InGaN/GaN heterostructures using plasma-assisted molecular beam epitaxy

    CERN Document Server

    Shim Kyu Ha; Kim, K H; Hong, S U; Cho, K I; Lee, H G; Kim, J

    1999-01-01

    The effects of rf plasma power on the structural/optical properties of GaN-based nitride epilayers grown by plasma-assisted molecular beam epitaxy have been investigated. Atomic force microscopy and high-resolution x-ray diffraction analyses revealed that the sharp interface of In sub 0 sub . sub 2 Ga sub 0 sub . sub 8 N/GaN heterostructures could be obtained by suppressing the surface roughening at high rf power. photoluminescence data suggest that the formation of damaged subsurface due to energetic particles was alleviated in the InGaN growth in comparison with the GaN growth. In our experimental set-up, the rf power of 400 W appeared to properly suppress the 3D island formation without causing defects at the subsurface of In sub 0 sub . sub 2 Ga sub 0 sub . sub 8 N. The phenomena associated with the indium incorporation could be explained by an inequality with two kinetic processes of the surface diffusion and the plasma stimulated desorption.

  1. Growth model investigation for AlN/Al(Ga)InN interface growth by plasma-assisted molecular beam epitaxy for high electron mobility transistor applications

    Energy Technology Data Exchange (ETDEWEB)

    Aidam, Rolf; Diwo, Elke; Godejohann, Birte-Julia; Kirste, Lutz; Quay, Ruediger; Ambacher, Oliver [Fraunhofer-Institute for Applied Solid State Physics, Freiburg (Germany)

    2014-12-01

    Heterostructures with lattice matched Al(Ga)InN barriers have been widely investigated as alternative to standard AlGaN/GaN based high electron mobility transistor structures for high power applications. Mostly these heterostructures comprise a thin AlN based spacer between GaN channel and lattice matched barrier. One key issue for high quality plasma-assisted molecular beam epitaxy (PA-MBE) of these structures is the control of the AlN-Al(Ga)InN interface since optimal growth conditions for high quality AlN differ significantly from those for growth of indium containing material. In this paper, a detailed analysis and a deduced model of the interface growth is presented. The Al/N ratio during AlN spacer growth is likely to influence the subsequent growth of quaternary Al(Ga)InN. Ideal Al/N ratio leads to high performance heterostructures, while slightly Al-rich conditions lead to the formation of Al residues on the substrate surface, which hinder subsequent epitaxial growth. Al/N ratios below unity lead to the deposition of ternary AlGaN instead of binary AlN spacers and to increased alloy scattering. An insertion of a thin GaN layer between spacer and barrier can hinder the formation of Al residues and leads to improved wafer homogeneity. (copyright 2014 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

  2. Blue and Green light InGaN/GaN Multiquantum-Well grown by plasma-assisted molecular beam epitaxy

    Science.gov (United States)

    Hu, Chia-Hsuan; Lo, Ikai; Shih, Cheng-Hung; Pang, Wen-Yuan; Tsai, Cheng-Da; Lin, Yu-Chiao

    2013-03-01

    High-efficiency red, green and blue light-emitting diodes (LEDs) can be used in the construction of full color display. We have grown green and blue light InGaN/GaN multiquantum-well (MQW) thin film on sapphire substrate with GaN buffer by using plasma-assisted molecular beam epitaxy. The optical properties of the samples were analyzed by photoluminescence measurement in room temperature. Under constant nitrogen flux condition, we obtained the blue and green emitting bands from different samples by modified the Indium and Gallium flux ratio in MQW. In high nitrogen flux condition, the wavelength shifts to 560nm, which provides an effective way to reach high Indium incorporation LED. In order to improve the quality, we can control the growth temperature and InGaN/GaN thickness. There are more than five order satellite peaks in Double Crystal X-ray Diffraction data. Smooth surface morphology has been verified in our samples by scanning electron microscope. This project is supported by National science council of Taiwan (NSC 101-2112-M-110-006-MY3).

  3. Properties of InSbN grown on GaAs by radio frequency nitrogen plasma-assisted molecular beam epitaxy

    International Nuclear Information System (INIS)

    We report the growth of InSbN on a lattice-mismatched GaAs substrate using radio frequency nitrogen plasma-assisted molecular beam epitaxy. The effects of a two-step thin InSb buffer layer grown at 330 and 380 deg. C and substrate temperature (270-380 deg. C) on the properties of the InSbN are studied. The crystalline quality of the InSbN is significantly improved by the two-step buffer layer due to defect suppression. The shifting in the absorption edge of the InSbN from ∼5 to 8 μm following an increase in the substrate temperature is correlated with the reduction in free carrier concentration from ∼1018 to 1016 cm-3 and increase in concentration of N substituting Sb from ∼0.2 to 1%. These results will be beneficial to those working on the pseudo-monolithic integration of InSbN detectors on a GaAs platform.

  4. Effects of growth temperature on high-quality In0.2Ga0.8N layers by plasma-assisted molecular beam epitaxy

    Institute of Scientific and Technical Information of China (English)

    Zhang Dongyan; Zheng Xinhe; Li Xuefei; Wu Yuanyuan; Wang Jianfeng; Yang Hui

    2012-01-01

    High-quality In0.2Ga0.8N epilayers were grown on a GaN template at temperatures of 520 and 580 ℃ via plasma-assisted molecular beam epitaxy.The X-ray rocking curve full widths at half maximum (FWHM) of (10.2)reflections is 936 arcsec for the 50-nm-thick InGaN layers at the lower temperature.When the growth temperature increases to 580 ℃,the FWHM of (00.2) reflections for these samples is very narrow and keeps similar,while significant improvement of(10.2) reflections with an FWHM value of 612 arcsec has been observed.This improved quality in InGaN layers grown at 580 ℃ is also reflected by the much larger size of the crystalline column from the AFM results,stronger emission intensity as well as a decreased FWHM of room temperature PL from 136 to 93.9 meV.

  5. Blue-violet InGaN laser diodes grown on bulk GaN substrates by plasma-assisted molecular-beam epitaxy

    International Nuclear Information System (INIS)

    We report on the InGaN multiquantum laser diodes (LDs) made by rf plasma-assisted molecular beam epitaxy (PAMBE). The laser operation at 408 nm is demonstrated at room temperature with pulsed current injections using 50 ns pulses at 0.25% duty cycle. The threshold current density and voltage for the LDs with cleaved uncoated mirrors are 12 kA/cm2 (900 mA) and 9 V, respectively. High output power of 0.83 W is obtained during pulse operation at 3.6 A and 9.6 V bias with the slope efficiency of 0.35 W/A. The laser structures are deposited on the high-pressure-grown low dislocation bulk GaN substrates taking full advantage of the adlayer enhanced lateral diffusion channel for adatoms below the dynamic metallic cover. Our devices compare very favorably to the early laser diodes fabricated using the metalorganic vapor phase epitaxy technique, providing evidence that the relatively low growth temperatures used in this process pose no intrinsic limitations on the quality of the blue optoelectronic components that can be fabricated using PAMBE

  6. High Al-content AlxGa1-xN epilayers grown on Si substrate by plasma-assisted molecular beam epitaxy

    International Nuclear Information System (INIS)

    The microstructure and optical properties of AlxGa1-xN/GaN/AlN films on Si (1 1 1) substrate grown by plasma-assisted molecular beam epitaxy (MBE) have been studied and investigated. Reflection high energy electron diffraction (RHEED), scanning electron microscopy (SEM), high-resolution X-ray diffraction (HR-XRD), energy dispersive X-ray spectroscopy (EDS) line analysis and photoluminescence (PL) were used to investigate a reconstruction pattern, cross-section, mole fraction and crystalline quality of the heterostructure. By applying the Vegard's law, a high Al-mole fraction of AlxGa1-xN sample with value of 0.43 has been obtained and compared with EDS line analysis measurement value. PL spectrum has exhibited a sharp and intense band edge emission of GaN with the absence of yellow emission band, indicating good crystal quality of the AlxGa1-xN has been successfully grown on Si substrate.

  7. Growth of N-polar GaN Using a CrN buffer layer on (0001) Al2O3 via plasma-assisted molecular beam epitaxy

    International Nuclear Information System (INIS)

    The growth of N-polar GaN films on (0001) Al2O3 substrates by plasma-assisted molecular beam epitaxy was demonstrated using a CrN buffer layer. Analysis of reflection high energy electron diffraction (RHEED) patterns and a chemical etching method were used in order to confirm the polarity of GaN on CrN. RHEED patterns show the 3 × 3 pattern characteristic of GaN. Chemical etching significantly changes the GaN surface morphology which implies that the N-polar GaN was grown on the CrN buffer layer. In addition, an improvement in the crystal properties of GaN was achieved using the annealing process for the CrN buffer layers. - Highlights: ► Demonstration of N-polar GaN growth on sapphire using CrN buffer layer. ► Polarity selection model proposed to explain the experimental observations. ► Improvement of N-polar GaN crystallinity with thermal treatment of CrN layers

  8. Photoluminescence of Ga-doped ZnO film grown on c-Al2O3 (0001) by plasma-assisted molecular beam epitaxy

    International Nuclear Information System (INIS)

    High quality gallium doped ZnO (Ga:ZnO) thin films were grown on c-Al2O3(1000) by plasma-assisted molecular beam epitaxy, and Ga concentration NGa was controlled in the range of 1x1018-2.5x1020/cm3 by adjusting/changing the Ga cell temperature. From the low-temperature photoluminescence at 10 K, the donor bound exciton I8 related to Ga impurity was clearly observed and confirmed by comparing the calculated activation energy of 16.8 meV of the emission peak intensity with the known localization energy, 16.1 meV. Observed asymmetric broadening with a long tail on the lower energy side in the photoluminescence (PL) emission line shape could be fitted by the Stark effect and the compensation ratio was approximately 14-17% at NGa≥1x1020/cm3. The measured broadening of photoluminescence PL emission is in good agreement with the total thermal broadening and potential fluctuations caused by random distribution of impurity at NGa lower than the Mott critical density

  9. Growth diagram of N-face GaN (0001{sup ¯}) grown at high rate by plasma-assisted molecular beam epitaxy

    Energy Technology Data Exchange (ETDEWEB)

    Okumura, Hironori, E-mail: okumura@engineering.ucsb.edu; McSkimming, Brian M.; Speck, James S. [Materials Department, University of California, Santa Barbara, California 93106 (United States); Huault, Thomas; Chaix, Catherine [RIBER S.A., 3a Rue Casimir Perier, BP 70083, 95873 Bezons Cedex (France)

    2014-01-06

    N-face GaN was grown on free-standing GaN (0001{sup ¯}) substrates at a growth rate of 1.5 μm/h using plasma-assisted molecular beam epitaxy. Difference in growth rate between (0001{sup ¯}) and (0001) oriented GaN depends on nitrogen plasma power, and the (0001{sup ¯}) oriented GaN had only 70% of the growth rate of the (0001) oriented GaN at 300 W. Unintentional impurity concentrations of silicon, carbon, and oxygen were 2 × 10{sup 15}, 2 × 10{sup 16}, and 7 × 10{sup 16} cm{sup −3}, respectively. A growth diagram was constructed that shows the dependence of the growth modes on the difference in the Ga and active nitrogen flux, Φ{sub Ga} − Φ{sub N*}, and the growth temperature. At high Φ{sub Ga} − Φ{sub N*} (Φ{sub Ga} ≫ Φ{sub N*}), two-dimensional (step-flow and layer-by-layer) growth modes were realized. High growth temperature (780 °C) expanded the growth window of the two-dimensional growth modes, achieving a surface with rms roughness of 0.48 nm without Ga droplets.

  10. Strain relaxation in GaN/AlxGa1-xN superlattices grown by plasma-assisted molecular-beam epitaxy

    International Nuclear Information System (INIS)

    We have investigated the misfit relaxation process in GaN/AlxGa1-xN (x = 0.1, 0.3, 0.44) superlattices (SL) deposited by plasma-assisted molecular beam epitaxy. The SLs under consideration were designed to achieve intersubband absorption in the mid-infrared spectral range. We have considered the case of growth on GaN (tensile stress) and on AlGaN (compressive stress) buffer layers, both deposited on GaN-on-sapphire templates. Using GaN buffer layers, the SL remains almost pseudomorphic for x = 0.1, 0.3, with edge-type threading dislocation densities below 9 x 108 cm-2 to 2 x 109 cm-2. Increasing the Al mole fraction to 0.44, we observe an enhancement of misfit relaxation resulting in dislocation densities above 1010 cm-2. In the case of growth on AlGaN, strain relaxation is systematically stronger, with the corresponding increase in the dislocation density. In addition to the average relaxation trend of the SL, in situ measurements indicate a periodic fluctuation of the in-plane lattice parameter, which is explained by the different elastic response of the GaN and AlGaN surfaces to the Ga excess at the growth front. The results are compared with GaN/AlN SLs designed for near-infrared intersubband absorption.

  11. Reaction kinetics and growth window for plasma-assisted molecular beam epitaxy of Ga2O3: Incorporation of Ga vs. Ga2O desorption

    Science.gov (United States)

    Vogt, Patrick; Bierwagen, Oliver

    2016-02-01

    A detailed study of the reaction kinetics of the plasma-assisted molecular beam epitaxy (MBE) growth of the n-type semiconducting oxide Ga2O3 is presented. The growth rate as a function of gallium flux is measured in situ by laser reflectometry at different growth temperatures (TG) and gallium-to-oxygen ratios (rGa). The flux of the suboxide Ga2O desorbed off the growth surface is identified in situ by line-of-sight quadrupole mass spectroscopy. The measurements reveal the influence of TG and rGa on the competing formation of Ga2O3 and desorption of Ga2O resulting in three different growth regimes: (i) Ga transport limited, (ii) Ga2O desorption limited, and (iii) O transport limited. As a result, we present a growth diagram of gallium oxide. This diagram illustrates the regimes of complete, partial, and no Ga incorporation as a function of TG and rGa, and thus provides guidance for the MBE growth of Ga2O3.

  12. Interface-assisted molecular spintronics

    International Nuclear Information System (INIS)

    Molecular spintronics, a field that utilizes the spin state of organic molecules to develop magneto-electronic devices, has shown an enormous scientific activity for more than a decade. But, in the last couple of years, new insights in understanding the fundamental phenomena of molecular interaction on magnetic surfaces, forming a hybrid interface, are presenting a new pathway for developing the subfield of interface-assisted molecular spintronics. The recent exploration of such hybrid interfaces involving carbon based aromatic molecules shows a significant excitement and promise over the previously studied single molecular magnets. In the above new scenario, hybridization of the molecular orbitals with the spin-polarized bands of the surface creates new interface states with unique electronic and magnetic character. This study opens up a molecular-genome initiative in designing new handles to functionalize the spin dependent electronic properties of the hybrid interface to construct spin-functional tailor-made devices. Through this article, we review this subject by presenting a fundamental understanding of the interface spin-chemistry and spin-physics by taking support of advanced computational and spectroscopy tools to investigate molecular spin responses with demonstration of new interface phenomena. Spin-polarized scanning tunneling spectroscopy is favorably considered to be an important tool to investigate these hybrid interfaces with intra-molecular spatial resolution. Finally, by addressing some of the recent findings, we propose novel device schemes towards building interface tailored molecular spintronic devices for applications in sensor, memory, and quantum computing

  13. Nitridation effects of Si(1 1 1) substrate surface on InN nanorods grown by plasma-assisted molecular beam epitaxy

    Energy Technology Data Exchange (ETDEWEB)

    Feng, Shan [Faculty of Materials Science and Chemistry, China University of Geosciences, Wuhan 430074 (China); Tan, Jin, E-mail: jintan_cug@163.com [Faculty of Materials Science and Chemistry, China University of Geosciences, Wuhan 430074 (China); Engineering Research Center of Nano-Geomaterials of Ministry of Education, China University of Geosciences, Wuhan 430074 (China); Li, Bin; Song, Hao; Wu, Zhengbo; Chen, Xin [Faculty of Materials Science and Chemistry, China University of Geosciences, Wuhan 430074 (China)

    2015-02-05

    Graphical abstract: The morphology evolution of InN nanorods in samples (g)–(i). The alignment of InN nanorods is improved and the deviation angle distribution narrows down with increase in nitriding time. It suggests that extending the nitriding time can enhance the vertical orientation of InN nanorods. - Highlights: • InN nanorods were grown on surface nitrided Si(1 1 1) substrate using PAMBE system. • Nitridation of substrate surface has a strong effect on morphology of InN nanorods. • InN nanorods cannot be formed with 1 min nitridation of Si(1 1 1) substrate. • Increasing nitriding time will increase optimum growth temperature of InN nanorods. • Increasing nitriding time can enhance vertical orientation of InN nanorods. - Abstract: The InN nanorods were grown on Si(1 1 1) substrate by plasma-assisted molecular beam epitaxy (PAMBE) system, with a substrate nitridation process. The effect of nitriding time of Si(1 1 1) substrate on morphology, orientation and growth temperature of InN nanorods was characterized via scanning electron microscopy (SEM) and X-ray diffraction (XRD). The deviation angle of InN nanorods was measured to evaluate the alignment of arrays. The results showed that InN nanorods could not be formed with 1 min nitridation of Si(1 1 1) substrate, but they could be obtained again when the nitriding time was increased to more than 10 min. In order to get aligned InN nanorods, the growth temperature needed to increase with longer nitriding time. The vertical orientation of InN nanorods could be enhanced with increase in nitriding time. The influence of the substrate nitridation on the photoluminescence (PL) spectra of InN nanorods has been investigated.

  14. Plasma-assisted molecular beam epitaxy of strain-compensated a-plane InGaN/AlGaN superlattices

    International Nuclear Information System (INIS)

    Strain-compensated InGaN/AlGaN structures can enable the growth of thick layers of InGaN epitaxial films far beyond the critical thickness for InGaN grown pseudomorphically to GaN. In this paper, we demonstrate the epitaxial growth of high-quality strain-compensated a-plane In0.12Ga0.88N/Al0.19Ga0.81N superlattices up to 5 times thicker than the critical thickness on free-standing a-plane GaN substrates by plasma-assisted molecular beam epitaxy (PA-MBE). The superlattices consist of 50 to 200 periods of 10 nm thick In0.12Ga0.88N and 6 nm thick Al0.19Ga0.81N layers. The structures are characterized using a double crystal X-ray diffractometer, asymmetric reciprocal space mapping, and atomic force microscopy. We use X-ray diffraction to determine the strain, composition, degree of relaxation, and superlattice period of our samples. The structural characteristics of periodic structures containing from 50 to 200 periods are compared to single layer, uncompensated In0.12Ga0.88N films. A 100 period structure exhibited only 15% relaxation compared to 69% relaxation for the bulk In0.12Ga0.88N film grown with the same total InGaN thickness but without strain-compensating layers. (copyright 2015 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  15. Nitridation effects of Si(1 1 1) substrate surface on InN nanorods grown by plasma-assisted molecular beam epitaxy

    International Nuclear Information System (INIS)

    Graphical abstract: The morphology evolution of InN nanorods in samples (g)–(i). The alignment of InN nanorods is improved and the deviation angle distribution narrows down with increase in nitriding time. It suggests that extending the nitriding time can enhance the vertical orientation of InN nanorods. - Highlights: • InN nanorods were grown on surface nitrided Si(1 1 1) substrate using PAMBE system. • Nitridation of substrate surface has a strong effect on morphology of InN nanorods. • InN nanorods cannot be formed with 1 min nitridation of Si(1 1 1) substrate. • Increasing nitriding time will increase optimum growth temperature of InN nanorods. • Increasing nitriding time can enhance vertical orientation of InN nanorods. - Abstract: The InN nanorods were grown on Si(1 1 1) substrate by plasma-assisted molecular beam epitaxy (PAMBE) system, with a substrate nitridation process. The effect of nitriding time of Si(1 1 1) substrate on morphology, orientation and growth temperature of InN nanorods was characterized via scanning electron microscopy (SEM) and X-ray diffraction (XRD). The deviation angle of InN nanorods was measured to evaluate the alignment of arrays. The results showed that InN nanorods could not be formed with 1 min nitridation of Si(1 1 1) substrate, but they could be obtained again when the nitriding time was increased to more than 10 min. In order to get aligned InN nanorods, the growth temperature needed to increase with longer nitriding time. The vertical orientation of InN nanorods could be enhanced with increase in nitriding time. The influence of the substrate nitridation on the photoluminescence (PL) spectra of InN nanorods has been investigated

  16. Bandgap measurements and the peculiar splitting of E2H phonon modes of InxAl1-xN nanowires grown by plasma assisted molecular beam epitaxy

    KAUST Repository

    Tangi, Malleswararao

    2016-07-26

    The dislocation free Inx Al 1-xN nanowires (NWs) are grown on Si(111) by nitrogen plasma assisted molecular beam epitaxy in the temperature regime of 490 °C–610 °C yielding In composition ranges over 0.50 ≤ x ≤ 0.17. We study the optical properties of these NWs by spectroscopic ellipsometry (SE), photoluminescence, and Raman spectroscopies since they possesses minimal strain with reduced defects comparative to the planar films. The optical bandgap measurements of Inx Al 1-xN NWs are demonstrated by SE where the absorption edges of the NW samples are evaluated irrespective of substrate transparency. A systematic Stoke shift of 0.04–0.27 eV with increasing x was observed when comparing the micro-photoluminescence spectra with the Tauc plot derived from SE. The micro-Raman spectra in the NWs with x = 0.5 showed two-mode behavior for A1(LO) phonons and single mode behavior for E2 H phonons. As for x = 0.17, i.e., high Al content, we observed a peculiar E2 H phonon mode splitting. Further, we observe composition dependent frequency shifts. The 77 to 600 K micro-Raman spectroscopy measurements show that both AlN- and InN-like modes of A1(LO) and E2 H phonons in Inx Al 1-xN NWs are redshifted with increasing temperature, similar to that of the binary III group nitride semiconductors. These studies of the optical properties of the technologically important Inx Al 1-xN nanowires will path the way towards lasers and light-emitting diodes in the wavelength of the ultra-violet and visible range.

  17. Effects of gallium doping on properties of a-plane ZnO films on r-plane sapphire substrates by plasma-assisted molecular beam epitaxy

    International Nuclear Information System (INIS)

    The authors report on the structural, optical, and electrical properties of Ga-doped a-plane (1120) ZnO films grown by plasma-assisted molecular beam epitaxy. Ga doping level was controlled by changing the Ga cell temperatures from 350 to 470 deg. C with an interval of 30 deg. C. With up to Ga cell temperatures of 440 deg. C, single crystalline Ga-doped a-plane ZnO films were grown; however, the sample with a Ga cell temperature of 470 deg. C showed polycrystalline features. The typical striated surface morphology normally observed from undoped ZnO films disappeared with Ga doping. ZnO films doped with Ga cell temperatures up to 440 deg. C did not show a significant change in full width at half maximum (FWHM) values of (1120) x-ray rocking curves by doping. The smallest FWHM values were 0.433 deg. (φ=90 deg.) and 0.522 deg. (φ=0 deg. ) for the sample with a Ga cell temperature of 350 deg. C. The polycrystalline ZnO film with excessive Ga doping at the Ga cell temperature of 470 deg. C showed significantly increased FWHM values. Hall measurements at room temperature (RT) revealed that electron concentration began to be saturated at the Ga cell temperature of 440 deg. C and electron mobility was drastically reduced at the Ga cell temperature of 470 deg. C. The carrier concentration of Ga-doped ZnO films were controlled from 7.2x1018 to 3.6x1020 cm-3. Anisotropic electrical properties (carrier concentration and Hall mobility) were observed in measurements by the van der Pauw method depending on the direction (c- or m-direction) for the undoped sample but not observed for the doped samples. RT photoluminescence (PL) spectra from the Ga-doped single crystalline ZnO films showed dominant near band edge (NBE) emissions with negligibly deep level emission. The NBE intensity in PL spectra increases with Ga doping.

  18. Growth and characterization of lattice-matched InAlN/GaN Bragg reflectors grown by plasma-assisted Molecular Beam Epitaxy

    OpenAIRE

    Gacevic, Zarko; Fernández-Garrido, Sergio; Calleja Pardo, Enrique; Luna García de la Infanta, Esperanza; Trampert, Achim

    2009-01-01

    We demonstrate six to ten period lattice-matched In(0.18) Al(0.82) N/GaN distributed Bragg reflectors with peak reflectivity centred around 400 nm, grown by molecular beam epitaxy. Thanks to the well-tuned ternary alloy composition crack-free layers have been obtained as confirmed by both optical and scanning electron microscopy. In addition, crosssectional analysis by high resolution transmission electron microscopy reveals highly periodic structure with abrupt interfaces. When the number of...

  19. Tool steel ion beam assisted nitrocarburization

    Energy Technology Data Exchange (ETDEWEB)

    Zagonel, L.F. [Instituto de Fisica ' Gleb Wataghin' , Universidade Estadual de Campinas, Unicamp, 13083-970 Campinas, Sao Paulo (Brazil)], E-mail: zagonel@ifi.unicamp.br; Alvarez, F. [Instituto de Fisica ' Gleb Wataghin' , Universidade Estadual de Campinas, Unicamp, 13083-970 Campinas, Sao Paulo (Brazil)

    2007-09-15

    The nitrocarburization of the AISI-H13 tool steel by ion beam assisted deposition is reported. In this technique, a carbon film is continuously deposited over the sample by the ion beam sputtering of a carbon target while a second ion source is used to bombard the sample with low energy nitrogen ions. The results show that the presence of carbon has an important impact on the crystalline and microstructural properties of the material without modification of the case depth.

  20. Tool steel ion beam assisted nitrocarburization

    International Nuclear Information System (INIS)

    The nitrocarburization of the AISI-H13 tool steel by ion beam assisted deposition is reported. In this technique, a carbon film is continuously deposited over the sample by the ion beam sputtering of a carbon target while a second ion source is used to bombard the sample with low energy nitrogen ions. The results show that the presence of carbon has an important impact on the crystalline and microstructural properties of the material without modification of the case depth

  1. Incorporation model of N into GaInNAs alloys grown by radio-frequency plasma-assisted molecular beam epitaxy

    International Nuclear Information System (INIS)

    We present a Maxwell-Boltzmann electron energy distribution based model for the incorporation rate of nitrogen into GaInNAs grown by molecular beam epitaxy (MBE) using a radio frequency plasma source. Nitrogen concentration is predicted as a function of radio-frequency system primary resistance, N flow, and RF power, and group III growth rate. The semi-empirical model is shown to be repeatable with a maximum error of 6%. The model was validated for two different MBE systems by growing GaInNAs on GaAs(100) with variable nitrogen composition of 0%–6%

  2. Photoionization studies with molecular beams

    International Nuclear Information System (INIS)

    A molecular beam photoionization apparatus which combines the advantages of both the molecular beam method with photoionization mass spectrometry has been designed and constructed for carrying out some unique photoionization experiments. Rotational cooling during the supersonic expansion has resulted in high resolution photoionization efficiency curves for NO, ICl, C2H2 and CH3I. The analysis of these spectra has yielded ionization potentials for these molecules to an accuracy of +- 3 MeV. Detailed autoionization structures were also resolved. This allows the investigation of the selection rules for autoionization, and the identification of the Rydberg series which converge to the excited states of the molecular ions. The degree of relaxation for thermally populated excited states has been examined using NO and ICl as examples. As a result of adiabatic cooling, a small percentage of dimers is also formed during the expansion. The photoionization efficiency curves for (NO)2, ArICl, Ar2, Kr2 and Xe2 have been obtained near the thresholds. Using the known dissociation energies of the (NO)2, Ar2, Kr2 and Xe2 van der Waals molecules, the corresponding dissociation energies for NO-NO+, Ar2+, Kr2+, and Xe2+ have been determined. The ionization mechanisms for this class of molecules are examined and discussed

  3. AlN/GaN double-barrier resonant tunneling diodes grown by rf-plasma-assisted molecular-beam epitaxy

    International Nuclear Information System (INIS)

    AlN/GaN double-barrier resonant tunneling diodes (DB-RTDs) were fabricated on (0001) Al2O3 substrates by molecular-beam epitaxy, using a rf-plasma nitrogen source. The AlN/GaN DB-RTDs were designed to have a 3-ML-thick GaN quantum well and 4-ML-thick AlN barrier layers sandwiched by Si-doped n-type GaN contact layers. The current-voltage characteristics of mesa diode samples showed clear negative differential resistance (NDR) at room temperature. The NDR was observed at 2.4 V with a peak current of 2.9 mA, which corresponds to 180 A/cm2. A peak-to-valley current ratio as high as 32 was obtained

  4. Photodissociation processes in molecular beams

    International Nuclear Information System (INIS)

    A description is presented of a study of the photodissociation dynamics of molecules in a molecular beam. Photo-fragmentation translational spectroscopy has been utilized to observe the photodissociation dynamics of ozone. Using a supersonic molecular beam and a 10 nanosecond pulsed laser at lambda = 266 nm, the velocities of the fragment products are measured by the method of time of flight. The resolution of the time of flight spectrum of ozone is sufficiently high that the electronic and vibrational states are clearly resolved and identified. Above the threshold (lambda 1D) has been estimated in the past to be unity for the process O3 (1A1) + hν)lambda 3(1B2) → O2(1Δ/sub g/) + O(1D). However a small production of O2 (3Σ/sub g/-) + O(3P) has been observed in this study. The O2(1Δ/sub g/) product yields four vibrational states (v = 0, 1, 2, 3) which yields a vibrational temperature of 27000K along with narrow energy distributions of rotational levels. These energy distributions are compared with photodissociation models along with the polarization dependence of the dissociative process which was also measured. 143 references

  5. 14th international symposium on molecular beams

    Energy Technology Data Exchange (ETDEWEB)

    1992-01-01

    This report discusses research being conducted with molecular beams. The general topic areas are as follows: Clusters I; reaction dynamics; atomic and molecular spectroscopy; clusters II; new techniques; photodissociation dynamics; and surfaces.

  6. 14th international symposium on molecular beams

    Energy Technology Data Exchange (ETDEWEB)

    1992-09-01

    This report discusses research being conducted with molecular beams. The general topic areas are as follows: Clusters I; reaction dynamics; atomic and molecular spectroscopy; clusters II; new techniques; photodissociation & dynamics; and surfaces.

  7. 14th international symposium on molecular beams

    International Nuclear Information System (INIS)

    This report discusses research being conducted with molecular beams. The general topic areas are as follows: Clusters I; reaction dynamics; atomic and molecular spectroscopy; clusters II; new techniques; photodissociation ampersand dynamics; and surfaces

  8. Lifetime obtained by ion beam assisted deposition

    International Nuclear Information System (INIS)

    We have fabricated green organic light-emitting diodes based on tris-(8-hydroxyquinoline)aluminium (Alq3) thin films. In order to favor the charge carriers transport from the anode, we have deposited a N,N'-diphenyl-N,N'-bis (3-methylphenyl)-1,1'-diphenyl-4,4'-diamine (TPD) layer (hole transport layer) on a ITO anode. Cathode is obtained with a calcium layer covered with a silver layer. This silver layer is used to protect the other layers against oxygen during the OLED use. All the depositions are performed under vacuum and the devices are not exposed to air during their realisation. In order to improve the silver layer characteristics, we have realized this layer with the ion beam assisted deposition process. The aim of this process is to densify the layer and then reduce the permeation of H2O and O2. We have used argon ions to assist the silver deposition. All the OLEDs optoelectronic characterizations (I = f(V), L = f(V)) are performed in the ambient air. We compare the results obtained with the assisted layer with those obtained with a classical cathode realized by thermal unassisted evaporation. We have realized lifetime measurements in the ambient air and we discuss about the assisted layer influence on the OLEDs performances

  9. Atomic and molecular beams production and collimation

    CERN Document Server

    Lucas, Cyril Bernard

    2013-01-01

    Atomic and molecular beams are employed in physics and chemistry experiments and, to a lesser extent, in the biological sciences. These beams enable atoms to be studied under collision-free conditions and allow the study of their interaction with other atoms, charged particles, radiation, and surfaces. Atomic and Molecular Beams: Production and Collimation explores the latest techniques for producing a beam from any substance as well as from the dissociation of hydrogen, oxygen, nitrogen, and the halogens.The book not only provides the basic expressions essential to beam design but also offers

  10. Elimination of columnar microstructure in N-face InAlN, lattice-matched to GaN, grown by plasma-assisted molecular beam epitaxy in the N-rich regime

    Energy Technology Data Exchange (ETDEWEB)

    Ahmadi, Elaheh; Wienecke, Steven; Keller, Stacia; Mishra, Umesh K. [Department of Electrical and Computer Engineering, University of California, Santa Barbara, California 93106 (United States); Shivaraman, Ravi; Wu, Feng; Kaun, Stephen W.; Speck, James S. [Materials Department, University of California, Santa Barbara, California 93106 (United States)

    2014-02-17

    The microstructure of N-face InAlN layers, lattice-matched to GaN, was investigated by scanning transmission electron microscopy and atom probe tomography. These layers were grown by plasma-assisted molecular beam epitaxy (PAMBE) in the N-rich regime. Microstructural analysis shows an absence of the lateral composition modulation that was previously observed in InAlN films grown by PAMBE. A room temperature two-dimensional electron gas (2DEG) mobility of 1100 cm{sup 2}/V s and 2DEG sheet charge density of 1.9 × 10{sup 13} cm{sup −2} was measured for N-face GaN/AlN/GaN/InAlN high-electron-mobility transistors with lattice-matched InAlN back barriers.

  11. Effect of high temperature thermal treatment of (100) γ-LiAlO2 substrate on epitaxial growth of ZnO films by plasma-assisted molecular beam epitaxy

    International Nuclear Information System (INIS)

    Non-polar ZnO thin films were fabricated on (100) γ-LiAlO2 substrates by plasma-assisted molecular beam epitaxy. The effect of high temperature thermal treatment of substrate on the crystalline orientation and quality of ZnO thin film was investigated. The film grown on (100) γ-LiAlO2 substrate without high temperature thermal treatment consists of domains of both polar and non-polar orientations as identified by the X-ray diffraction pattern. Using high temperature thermal treatment of substrate, the growth of polar ZnO has been suppressed effectively. Besides, high temperature thermal treatment of substrate improves the crystalline quality of epitaxial ZnO thin film, which exhibits a smaller full width at half maximum value of ZnO (101−0) diffraction peak and a weaker deep level emission of photoluminescence. The suppression of polar ZnO growth and the quality improvement of the epitaxial ZnO films are due to the improvement of surface morphology and roughness of the substrate upon high temperature treatment. - Highlights: • ZnO films are grown on (100) γ-LiAlO2 by plasma-assisted molecular beam epitaxy. • ZnO film grown on (100) γ-LiAlO2 without high temperature treatment is dual-oriented. • ZnO film grown on γ-LiAlO2 thermally-treated at 900 °C for 1 h is almost (101−0) oriented. • High-temperature thermal treatment of substrate improves ZnO crystalline quality

  12. Cold and Slow Molecular Beam

    OpenAIRE

    Rasmussen, Julia; Patterson, Dave; Lu, Hsin-I; Wright, Matthew; Doyle, John M.

    2011-01-01

    Employing a two-stage cryogenic buffer gas cell, we produce a cold, hydrodynamically extracted beam of calcium monohydride molecules with a near effusive velocity distribution. Beam dynamics, thermalization and slowing are studied using laser spectroscopy. The key to this hybrid, effusive-like beam source is a “slowing cell” placed immediately after a hydrodynamic, cryogenic source [Patterson et al., J. Chem. Phys., 2007, 126, 154307]. The resulting CaH beams are created in two regimes. In on...

  13. Molecular beam epitaxy a short history

    CERN Document Server

    Orton, J W

    2015-01-01

    This volume describes the development of molecular beam epitaxy from its origins in the 1960s through to the present day. It begins with a short historical account of other methods of crystal growth, both bulk and epitaxial, to set the subject in context, emphasising the wide range of semiconductor materials employed. This is followed by an introduction to molecular beams and their use in the Stern-Gerlach experiment and the development of the microwave MASER.

  14. III-V semiconducting nanowires by molecular beam epitaxy

    OpenAIRE

    Jabeen, Fauzia

    2009-01-01

    This thesis is devoted to the study of the growth of III-V nanowires (NWs) by catalyst assisted and catalyst free molecular beam epitaxy (MBE). The nanostructures have been routinely characterized by scanning electron microscopy (SEM) and, to a minor extent by transmission electron microscopy (TEM). X-ray photoemission spectroscopy (XPS), scanning photoemission microscopy (SPEM), extended X-ray absrorption fi ne structure analysis (EXAFS), photoluminescence (PL) and trans- port me...

  15. Infrared laser spectroscopy of molecular beams

    International Nuclear Information System (INIS)

    Presents the first successful observation of the infrared spectrum of a single, collimated (3.6 x 10-4 steradians) beam of carbon monoxide molecules sampled from a supersonic free jet expansion. The principle of the technique is to detect directly the power absorbed from a tunable infrared laser beam by the molecules of a molecular beam, using a microcalorimeter (a cyrogenic bolometer) placed a short distance downstream from the intersection of the two beams. Since infrared fluorescent lifetimes are long, the absorbed power is transferred by the molecules to the bolometer where it is detected as a change in resistance. (Auth.)

  16. Plasma assisted molecular beam epitaxy growth and effect of varying buffer thickness on the formation of ultra-thin In0.17Al0.83N/GaN heterostructure on Si(111)

    International Nuclear Information System (INIS)

    This work reports on the detailed plasma-assisted molecular beam epitaxy (PAMBE) growth of ultra-thin In0.17Al0.83N/GaN heterostructures on Si(111) substrate with three different buffer thickness (600 nm, 400 nm, and 200 nm). Growth through critical optimization of growth conditions is followed by the investigation of impact of varying buffer thickness on the formation of ultra-thin 1.5 nm, In0.17Al0.83N–1.25 nm, GaN–1.5 nm, In0.17Al0.83N heterostructure, in terms of threading dislocation (TD) density. Analysis reveals a drastic reduction of TD density from the order 1010 cm−2 to 108 cm−2 with increasing buffer thickness resulting smooth ultra-thin active region for thick buffer structure. Increasing strain with decreasing buffer thickness is studied through reciprocal space mapping analysis. Surface morphology through atomic force microscopy analysis also supports our study by observing an increase of pits and root mean square value (0.89 nm, 1.2 nm, and 1.45 nm) with decreasing buffer thickness which are resulted due to the internal strain and TDs

  17. Growth of c-plane ZnO on γ-LiAlO2 (1 0 0) substrate with a GaN buffer layer by plasma assisted molecular beam epitaxy

    International Nuclear Information System (INIS)

    Highlights: • ZnO epilayers were grown on LiAlO2 (1 0 0) substrate with a GaN buffer layer by MBE. • A high Zn/O flux ratio is beneficial for reducing the density of screw dislocations. • Reciprocal space maps demonstrate that the misfit strain in ZnO has been relaxed. • No interfacial layer is formed at ZnO/GaN interface using a Zn pre-exposure strategy. - Abstract: C-plane ZnO epilayers were grown on LiAlO2 (1 0 0) substrate with a GaN buffer layer by plasma assisted molecular beam epitaxy. Both the X-ray rocking curves and the transmission electron microscopy analyses indicate that the ZnO epilayers exhibit a lower threading dislocation density (∼1 × 1010 cm−2) as compared to those grown on LiAlO2 substrate without the buffer layer. A high Zn/O flux ratio is beneficial for reducing the density of screw-type dislocations. Reciprocal space maps demonstrate that the misfit strain has been relaxed. No interfacial layer is formed at the ZnO/GaN interface by using a Zn pre-exposure strategy. The ZnO epilayers exhibit a strong near band edge emission at 3.28 eV at room temperature with a negligible green band emission

  18. Effect of Al mole fraction on structural and electrical properties of AlxGa1-xN/GaN heterostructures grown by plasma-assisted molecular beam epitaxy

    International Nuclear Information System (INIS)

    The effect of Al mole fractions on the structural and electrical properties of AlxGa1-xN/GaN thin films grown by plasma-assisted molecular beam epitaxy (PA-MBE) on Si (1 1 1) substrates has been investigated by X-ray diffraction (XRD), scanning electron microscopy (SEM), atomic force microscopy (AFM), and current-voltage (I-V) measurements. X-ray results revealed that the AlGaN/GaN/AlN was epitaxially grown on Si substrate. By applying Vegard's law, the Al mole fractions of AlxGa1-xN samples were found to be 0.11, 0.24, 0.30 and 0.43, respectively. The structural and morphology results indicated that there is a relatively larger tensile strain for the sample with the smallest Al mole fraction; while a smaller compressive strain and larger grain size appear with Al mole fraction equal to 0.30. The strain gets relaxed with the highest Al mole fraction sample. Finally, the linear relationship between the barrier height and Al mole fraction was obtained.

  19. Effects of growth temperature on the structural and the optical properties of ZnO thin films on porous silicon grown by using plasma-assisted molecular beam epitaxy

    Energy Technology Data Exchange (ETDEWEB)

    Kim, Min Su; Kim, Soa Ram; Yim, Kwang Gug; Leem, Jae Young; Nam, Gi Woong [Inje University, Gimhae (Korea, Republic of); Kim, Do Yeob [Clemson University, Clemson, South Carolina (United States); Lee, Dong Yul [Samsung Electronics Co. Ltd., Yongin (Korea, Republic of); Kim, Jin Soo [Chonbuk National University, Jeonju (Korea, Republic of); Kim, Jong Su [Yeungnam University, Gyeongsan (Korea, Republic of); Son, Jeong Sik [Kyungwoon University, Gumi (Korea, Republic of)

    2012-05-15

    Zinc oxide (ZnO) thin films were grown on Si and porous silicon (PS) at different growth temperatures in the range from 150 to 550 .deg. C by using plasma-assisted molecular beam epitaxy (PA-MBE). The effects of PS and growth temperature on the structural and the optical properties of the ZnO thin films were investigated by using atomic force microscopy (AFM), scanning electron microscopy (SEM), X-ray diffraction (XRD), and photoluminescence (PL). A higher intensity and a narrower full width at half maximum (FWHM) of the ZnO (002) diffraction peak were observed from the ZnO thin films grown on PS, indicating improved crystal quality. For the ZnO thin films grown on Si, the optical properties were gradually enhanced as the growth temperature was increased. However, the structural and the optical properties of the ZnO thin films grown on PS exhibited the largest improvement at a growth temperature of 350 .deg. C. The structural and the optical properties of the ZnO thin films, compared with the ZnO thin films grown on Si, were improved by introducing PS, and the optimum growth temperature was decreased.

  20. Structural and optical properties of nonpolar (1 1 -2 0) a-plane GaN grown on (1 -1 0 2) r-plane sapphire substrate by plasma-assisted molecular beam epitaxy

    International Nuclear Information System (INIS)

    Highlights: → Structural and optical study of a-plane GaN film grown on r-sapphire by PAMBE. → HRXRD was used to determine the epitaxial relation of a-plane GaN with r-sapphire. → The plane-view TEM reveals the formation of basal stacking faults in a-plane GaN. → Low temperature PL emission was found to be dominated by basal stacking faults. → Raman spectroscopy study shows that a-GaN film is compressively strained. -- We report the structural and optical properties of a-plane GaN film grown on r-plane sapphire substrate by plasma-assisted molecular beam epitaxy. High resolution X-ray diffraction was used to determine the out-of-plane and in-plane epitaxial relation of a-plane GaN to r-plane sapphire. Low-temperature photoluminescence emission was found to be dominated by basal stacking faults along with near-band emission. Raman spectroscopy shows that the a-GaN film is of reasonably good quality and compressively strained.

  1. Growth of c-plane ZnO on γ-LiAlO{sub 2} (1 0 0) substrate with a GaN buffer layer by plasma assisted molecular beam epitaxy

    Energy Technology Data Exchange (ETDEWEB)

    Yan, T. [Department of Materials and Optoelectronic Science/Center for Nanoscience and Nanotechnology, National Sun Yat-Sen University, Kaohsiung 80424, Taiwan, ROC (China); Key Laboratory of Optoelectronic Materials Chemistry and Physics, Fujian Institute of Research on the Structure of Matter, Chinese Academy of Sciences, Fuzhou, Fujian, 350002 (China); Lu, C.-Y.J. [Department of Materials and Optoelectronic Science/Center for Nanoscience and Nanotechnology, National Sun Yat-Sen University, Kaohsiung 80424, Taiwan, ROC (China); Schuber, R. [Institute of Applied Physics/DFG-Center for Functional Nanostructures (CFN), Karlsruhe Institute of Technology, DE-76131 Karlsruhe (Germany); Chang, L., E-mail: lwchang@mail.nsysu.edu.tw [Department of Materials and Optoelectronic Science/Center for Nanoscience and Nanotechnology, National Sun Yat-Sen University, Kaohsiung 80424, Taiwan, ROC (China); Schaadt, D.M. [Institute of Applied Physics/DFG-Center for Functional Nanostructures (CFN), Karlsruhe Institute of Technology, DE-76131 Karlsruhe (Germany); Institute of Energy Research and Phyiscal Technologies, Clausthal Technical University, Am Stollen 19B, D-38640 Goslar (Germany); Chou, M.M.C.; Ploog, K.H. [Department of Materials and Optoelectronic Science/Center for Nanoscience and Nanotechnology, National Sun Yat-Sen University, Kaohsiung 80424, Taiwan, ROC (China); Chiang, C.-M. [Department of Chemistry, National Sun Yat-Sen University, Kaohsiung 80424, Taiwan, ROC (China)

    2015-10-01

    Highlights: • ZnO epilayers were grown on LiAlO{sub 2} (1 0 0) substrate with a GaN buffer layer by MBE. • A high Zn/O flux ratio is beneficial for reducing the density of screw dislocations. • Reciprocal space maps demonstrate that the misfit strain in ZnO has been relaxed. • No interfacial layer is formed at ZnO/GaN interface using a Zn pre-exposure strategy. - Abstract: C-plane ZnO epilayers were grown on LiAlO{sub 2} (1 0 0) substrate with a GaN buffer layer by plasma assisted molecular beam epitaxy. Both the X-ray rocking curves and the transmission electron microscopy analyses indicate that the ZnO epilayers exhibit a lower threading dislocation density (∼1 × 10{sup 10} cm{sup −2}) as compared to those grown on LiAlO{sub 2} substrate without the buffer layer. A high Zn/O flux ratio is beneficial for reducing the density of screw-type dislocations. Reciprocal space maps demonstrate that the misfit strain has been relaxed. No interfacial layer is formed at the ZnO/GaN interface by using a Zn pre-exposure strategy. The ZnO epilayers exhibit a strong near band edge emission at 3.28 eV at room temperature with a negligible green band emission.

  2. Molecular-beam spectroscopy of interhalogen molecules

    International Nuclear Information System (INIS)

    A molecular-beam electric-resonance spectrometer employing a supersonic nozzle source has been used to obtain hyperfine spectra of 79Br35Cl. Analyses of these spectra and of microwave spectra published by other authors have yielded new values for the electric dipole moment and for the nuclear quadrupole coupling constants in this molecule. The new constants are significantly different from the currently accepted values. Van der Waals clusters containing chlorine monofluoride have been studied under various expansion conditions by the molecular-beam electric-deflection method. The structural possibilities indicated by the results are discussed, and cluster geometries are proposed

  3. Plasma-assisted molecular beam epitaxy of Al(Ga)N layers and quantum well structures for optically pumped mid-UV lasers on c-Al2O3

    International Nuclear Information System (INIS)

    This paper reports on novel approaches developed for plasma-assisted molecular beam epitaxy of Al-rich AlGaN epilayers and quantum well heterostructures on c-sapphire, which allowed us to fabricate low-threshold optically-pumped separate confinement heterostructure lasers emitting in the mid-UV spectral range (258–290 nm) with the threshold power density below 600 kW cm−2. The optimum buffer structure has been developed which provides lowering the near-surface threading dislocation density down to 1.5 × 108 and 3 × 109 cm−2 for screw and edge types, respectively, and improving the surface morphology (rms < 0.7 nm at the area of 3 × 3 μm−2). It comprises the high-temperature (780 °C) migration enhanced epitaxy growth of a (30–70) nm thick AlN nucleation layer on c-Al2O3, followed by a 2 μm thick AlN buffer grown under the metal-rich conditions in the Al-flux modulation mode and containing several (up to 6) ultra-thin (∼3 nm) GaN interlayers grown at N-rich conditions. Proper strain engineering in AlGaN single quantum well heterostructure grown atop of the AlN buffer layer enables one to preserve dominant TE polarization of both spontaneous and stimulated emission even at shortest obtained wavelength (258 nm). The threshold power density of stimulated emission as low as 150 kW cm−2 at 289 nm for a single quantum well laser structure has been demonstrated. (invited article)

  4. Control of ion content and nitrogen species using a mixed chemistry plasma for GaN grown at extremely high growth rates >9 μm/h by plasma-assisted molecular beam epitaxy

    Energy Technology Data Exchange (ETDEWEB)

    Gunning, Brendan P.; Clinton, Evan A.; Merola, Joseph J.; Doolittle, W. Alan, E-mail: alan.doolittle@ece.gatech.edu [Georgia Institute of Technology, Atlanta, Georgia 30332 (United States); Bresnahan, Rich C. [Veeco Instruments, St. Paul, Minnesota 55127 (United States)

    2015-10-21

    Utilizing a modified nitrogen plasma source, plasma assisted molecular beam epitaxy (PAMBE) has been used to achieve higher growth rates in GaN. A higher conductance aperture plate, combined with higher nitrogen flow and added pumping capacity, resulted in dramatically increased growth rates up to 8.4 μm/h using 34 sccm of N{sub 2} while still maintaining acceptably low operating pressure. It was further discovered that argon could be added to the plasma gas to enhance growth rates up to 9.8 μm/h, which was achieved using 20 sccm of N{sub 2} and 7.7 sccm Ar flows at 600 W radio frequency power, for which the standard deviation of thickness was just 2% over a full 2 in. diameter wafer. A remote Langmuir style probe employing the flux gauge was used to indirectly measure the relative ion content in the plasma. The use of argon dilution at low plasma pressures resulted in a dramatic reduction of the plasma ion current by more than half, while high plasma pressures suppressed ion content regardless of plasma gas chemistry. Moreover, different trends are apparent for the molecular and atomic nitrogen species generated by varying pressure and nitrogen composition in the plasma. Argon dilution resulted in nearly an order of magnitude achievable growth rate range from 1 μm/h to nearly 10 μm/h. Even for films grown at more than 6 μm/h, the surface morphology remained smooth showing clear atomic steps with root mean square roughness less than 1 nm. Due to the low vapor pressure of Si, Ge was explored as an alternative n-type dopant for high growth rate applications. Electron concentrations from 2.2 × 10{sup 16} to 3.8 × 10{sup 19} cm{sup −3} were achieved in GaN using Ge doping, and unintentionally doped GaN films exhibited low background electron concentrations of just 1–2 × 10{sup 15} cm{sup −3}. The highest growth rates resulted in macroscopic surface features due to Ga cell spitting, which is an engineering challenge still to be

  5. Control of ion content and nitrogen species using a mixed chemistry plasma for GaN grown at extremely high growth rates >9 μm/h by plasma-assisted molecular beam epitaxy

    International Nuclear Information System (INIS)

    Utilizing a modified nitrogen plasma source, plasma assisted molecular beam epitaxy (PAMBE) has been used to achieve higher growth rates in GaN. A higher conductance aperture plate, combined with higher nitrogen flow and added pumping capacity, resulted in dramatically increased growth rates up to 8.4 μm/h using 34 sccm of N2 while still maintaining acceptably low operating pressure. It was further discovered that argon could be added to the plasma gas to enhance growth rates up to 9.8 μm/h, which was achieved using 20 sccm of N2 and 7.7 sccm Ar flows at 600 W radio frequency power, for which the standard deviation of thickness was just 2% over a full 2 in. diameter wafer. A remote Langmuir style probe employing the flux gauge was used to indirectly measure the relative ion content in the plasma. The use of argon dilution at low plasma pressures resulted in a dramatic reduction of the plasma ion current by more than half, while high plasma pressures suppressed ion content regardless of plasma gas chemistry. Moreover, different trends are apparent for the molecular and atomic nitrogen species generated by varying pressure and nitrogen composition in the plasma. Argon dilution resulted in nearly an order of magnitude achievable growth rate range from 1 μm/h to nearly 10 μm/h. Even for films grown at more than 6 μm/h, the surface morphology remained smooth showing clear atomic steps with root mean square roughness less than 1 nm. Due to the low vapor pressure of Si, Ge was explored as an alternative n-type dopant for high growth rate applications. Electron concentrations from 2.2 × 1016 to 3.8 × 1019 cm−3 were achieved in GaN using Ge doping, and unintentionally doped GaN films exhibited low background electron concentrations of just 1–2 × 1015 cm−3. The highest growth rates resulted in macroscopic surface features due to Ga cell spitting, which is an engineering challenge still to be addressed. Nonetheless, the dramatically

  6. Silicon nitride layers on tool steel produced by ion beam mixing and ion beam assisted deposition

    International Nuclear Information System (INIS)

    Silicon nitride layers on tool steel are produced both, by Kr+ implantation into reactively sputtered Si3N4 on steel (ion beam mixing) and N2+ implantation into evaporated Si on steel (ion beam assisted deposition). Atomic concentration profiles of Fe and Si measured by RBS and XPS show interface mixing. After ion beam assisted deposition complete Si-N compound formation takes place as shown by XPS. Ion beam mixing of Si3N4/steel decreases the etch rate in hydrochloric acid by 50% with respect to uncovered steel. After flash lamp annealing the ion irradiated silicon nitride layer becomes stable against the aggressive acid used. (author)

  7. Dual ion beam assisted deposition of biaxially textured template layers

    Energy Technology Data Exchange (ETDEWEB)

    Groves, James R.; Arendt, Paul N.; Hammond, Robert H.

    2005-05-31

    The present invention is directed towards a process and apparatus for epitaxial deposition of a material, e.g., a layer of MgO, onto a substrate such as a flexible metal substrate, using dual ion beams for the ion beam assisted deposition whereby thick layers can be deposited without degradation of the desired properties by the material. The ability to deposit thicker layers without loss of properties provides a significantly broader deposition window for the process.

  8. Silicon/Germanium Molecular Beam Epitaxy

    OpenAIRE

    Ericsson, Leif

    2006-01-01

    Molecular Beam Epitaxy (MBE) is a well-established method to grow low-dimensional structures for research applications. MBE has given many contributions to the rapid expanding research-area of nano-technology and will probably continuing doing so. The MBE equipment, dedicated for Silicon/Germanium (Si/Ge) systems, at Karlstads University (Kau) has been studied and started for the first time. In the work of starting the system, all the built in interlocks has been surveyed and connected, and t...

  9. Perspective: Oxide molecular-beam epitaxy rocks!

    Directory of Open Access Journals (Sweden)

    Darrell G. Schlom

    2015-06-01

    Full Text Available Molecular-beam epitaxy (MBE is the “gold standard” synthesis technique for preparing semiconductor heterostructures with high purity, high mobility, and exquisite control of layer thickness at the atomic-layer level. Its use for the growth of multicomponent oxides got off to a rocky start 30 yr ago, but in the ensuing decades, it has become the definitive method for the preparation of oxide heterostructures too, particularly when it is desired to explore their intrinsic properties. Examples illustrating the unparalleled achievements of oxide MBE are given; these motivate its expanding use for exploring the potentially revolutionary states of matter possessed by oxide systems.

  10. Perspective: Oxide molecular-beam epitaxy rocks!

    Energy Technology Data Exchange (ETDEWEB)

    Schlom, Darrell G., E-mail: schlom@cornell.edu [Department of Materials Science and Engineering, Cornell University, Ithaca, New York 14853, USA and Kavli Institute at Cornell for Nanoscale Science, Ithaca, New York 14853 (United States)

    2015-06-01

    Molecular-beam epitaxy (MBE) is the “gold standard” synthesis technique for preparing semiconductor heterostructures with high purity, high mobility, and exquisite control of layer thickness at the atomic-layer level. Its use for the growth of multicomponent oxides got off to a rocky start 30 yr ago, but in the ensuing decades, it has become the definitive method for the preparation of oxide heterostructures too, particularly when it is desired to explore their intrinsic properties. Examples illustrating the unparalleled achievements of oxide MBE are given; these motivate its expanding use for exploring the potentially revolutionary states of matter possessed by oxide systems.

  11. Molecular beam studies of reaction dynamics

    Energy Technology Data Exchange (ETDEWEB)

    Lee, Y.T.

    1987-03-01

    Purpose of this research project is two-fold: (1) to elucidate detailed dynamics of simple elementary reactions which are theoretically important and to unravel the mechanism of complex chemical reactions or photo chemical processes which play an important role in many macroscopic processes and (2) to determine the energetics of polyatomic free radicals using microscopic experimental methods. Most of the information is derived from measurement of the product fragment translational energy and angular distributions using unique molecular beam apparati designed for these purposes.

  12. Molecular beam depletion: a new approach

    CERN Document Server

    Dorado, Manuel

    2014-01-01

    During the last years some interesting experimental results have been reported for experiments in N20, N0 , N0 dimer , H2 , Toluene and BaFCH3 cluster. The main result consists in the observation of molecular beam depletion when the molecules of a pulsed beam interact with a static electric or magnetic field and an oscillating field (RF). In these cases, and as a main difference, instead of using four fields as in the original technique developed by I.I. Rabi and others, only two fields, those which configure the resonant unit, are used. That is, without using the nonhomogeneous magnetic fields. The depletion explanation for I.I. Rabi and others is based in the interaction between the molecular electric or magnetic dipole moment and the non-homogeneous fields. But, obviously, the change in the molecules trajectories observed on these new experiments has to be explained without considering the force provided by the field gradient because it happens without using non-homogeneous fields. In this paper a theoreti...

  13. Chemically assisted ion beam etching of polycrystalline and (100)tungsten

    Science.gov (United States)

    Garner, Charles

    1987-01-01

    A chemically assisted ion-beam etching technique is described which employs an ion beam from an electron-bombardment ion source and a directed flux of ClF3 neutrals. This technique enables the etching of tungsten foils and films in excess of 40 microns thick with good anisotropy and pattern definition over areas of 30 sq mm, and with a high degree of selectivity. (100) tungsten foils etched with this process exhibit preferred-orientation etching, while polycrystalline tungsten films exhibit high etch rates. This technique can be used to pattern the dispenser cathode surfaces serving as electron emitters in traveling-wave tubes to a controlled porosity.

  14. High Density Pulsed Molecular Beam for Cold Ion Chemistry

    OpenAIRE

    Kokish, M. G.; V.Rajagopal; Marler, J. P.; Odom, B. C.

    2014-01-01

    A recent expansion of cold and ultracold molecule applications has led to renewed focus on molecular species preparation under ultrahigh vacuum conditions. Meanwhile, molecular beams have been used to study gas phase chemical reactions for decades. In this manuscript, we describe an apparatus that uses pulsed molecular beam technology to achieve high local gas densities, leading to faster reaction rates with cold trapped ions. We characterize the beam's spatial profile using the trapped ions ...

  15. Hemocompatibility of DLC coatings synthesized by ion beam assisted deposition

    Institute of Scientific and Technical Information of China (English)

    2001-01-01

    Ion beam-assisted diamond-like carbon (DLC) coatings have beenused for growing the human platelet, fibrinogen, and albumin in the control environment in order to assess their hemocompatibility. The hard carbon films were prepared on polymethylmethacrylate (PMMA) at room temperature using ion beam assisted deposition (IBAD). Raman spectroscopic analysis proved that the carbon films on PMMA are diamond-like with a higher fraction of sp\\+3 bonds in the structure of mixed sp\\+2+sp\\+3 bonding. The blood protein adsorption tests showed that DLC coatings can adsorb more albumin and are slightly more fibrinogen than the PMMA chosen as a control sample. The platelets adhered on DLC coatings were reduced significantly in number. These results indicate good hemocompatibility of DLC coatings.

  16. Angular momentum alignment in molecular beam scattering

    International Nuclear Information System (INIS)

    It is shown how the angular momentum alignment in a molecular beam can be determined using laser-induced fluorescence in combination with precession of the angular momenta in a magnetic field. After a general analysis of the method, some results are presented to illustrate the possibilities of the method. Experimental data are presented on the alignment production for Na2 molecules that made a collision induced angular momentum transition. Magnitude as well as direction of the alignment have been determined for scattering with several scattering partners and for a large number of scattering angles and transitions. The last chapter deals with the total alignment production in a final J-state, i.e. without state selection of the initial rotational state. (orig.)

  17. Twenty years of molecular beam epitaxy

    Science.gov (United States)

    Cho, A. Y.

    1995-05-01

    The term "molecular beam epitaxy" (MBE) was first used in one of our crystal growth papers in 1970, after having conducted extensive surface physics studies in the late 1960's of the interaction of atomic and molecular beams with solid surfaces. The unique feature of MBE is the ability to prepare single crystal layers with atomic dimensional precision. MBE sets the standard for epitaxial growth and has made possible semiconductor structures that could not be fabricated with either naturally existing materials or by other crystal growth techniques. MBE led the crystal growth technologies when it prepared the first semiconductor quantum well and superlattice structures that gave unexpected and exciting electrical and optical properties. For example, the discovery of the fractional quantized Hall effect. It brought experimental quantum physics to the classroom, and practically all major universities throughout the world are now equipped with MBE systems. The fundamental principles demonstrated by the MBE growth of III-V compound semiconductors have also been applied to the growth of group IV, II-VI, metal, and insulating materials. For manufacturing, the most important criteria are uniformity, precise control of the device structure, and reproducibility. MBE has produced more lasers (3 to 5 million per month for compact disc application) than any other crystal growth technique in the world. New directions for MBE are to incorporate in-situ, real-time monitoring capabilities so that complex structures can be precisely "engineered". In the future, as environmental concerns increase, the use of toxic arsine and phosphine may be limited. Successful use of valved cracker cells for solid arsenic and phosphorus has already produced InP based injection lasers.

  18. Supersonic molecular beam fuelling at ASDEX upgrade

    International Nuclear Information System (INIS)

    The supersonic molecular beam injection (SBMI), is a fuelling technique that has been developed at Tore-Supra. This technique is based on the fast expansion of a small volume of deuterium at high pressure (typically 2-5 bars) through a nozzle into the plasma chamber. Results obtained in limiter configuration look promising: enhanced fuelling efficiency (defined as the increase in plasma particle content divided by the number of injected particles) compared to gas puff, in the range 30-50% range, have been observed. Recently one SBMI has been implemented in the divertor tokamak ASDEX upgrade in order to assess the fuelling potential of the technique. The comparison of these results with those obtained in Tore-Supra with the same hardware leads to the following conclusion: the impact of the SBMI on the plasma is much weaker. The main reason comes from the difference in the amount of particle involved per pulse that is in fact limited for technical reasons. The fuelling efficiency reaches 30% in L-mode and low density H-mode plasmas and is reduced to less than 15% in high density H-mode discharges. The amount of particle per pulse was about 10-15% of the plasma content leading to a small edge perturbation, smaller than a typical type-I ELM. A significant increase in the beam flux could improve the beam penetration and consequently the fuelling efficiency by a stronger edge cooling but the impact of such a perturbation on the confinement is still to assess. (A.C.)

  19. Merged-Beams for Slow Molecular Collision Experiments

    CERN Document Server

    Wei, Qi; Herschbach, Dudley

    2012-01-01

    Molecular collisions can be studied at very low relative kinetic energies, in the milliKelvin range, by merging codirectional beams with much higher translational energies, extending even to the kiloKelvin range, provided that the beam speeds can be closely matched. This technique provides far more intensity and wider chemical scope than methods that require slowing both collision partners. Previously, at far higher energies, merged beams have been widely used with ions and/or neutrals formed by charge transfer. Here we assess for neutral, thermal molecular beams the range and resolution of collision energy that now appears attainable, determined chiefly by velocity spreads within the merged beams. Our treatment deals both with velocity distributions familiar for molecular beams formed by effusion or supersonic expansion, and an unorthodox variant produced by a rotating supersonic source capable of scanning the lab beam velocity over a wide range.

  20. Note: High density pulsed molecular beam for cold ion chemistry

    International Nuclear Information System (INIS)

    A recent expansion of cold and ultracold molecule applications has led to renewed focus on molecular species preparation under ultrahigh vacuum conditions. Meanwhile, molecular beams have been used to study gas phase chemical reactions for decades. In this paper, we describe an apparatus that uses pulsed molecular beam technology to achieve high local gas densities, leading to faster reaction rates with cold trapped ions. We characterize the beam's spatial profile using the trapped ions themselves. This apparatus could be used for preparation of molecular species by reactions requiring excitation of trapped ion precursors to states with short lifetimes or for obtaining a high reaction rate with minimal increase of background chamber pressure

  1. A source of translationally cold molecular beams

    Science.gov (United States)

    Sarkozy, Laszlo C.

    Currently the fields studying or using molecules with low kinetic energies are experiencing an unprecedented growth. Astronomers and chemists are interested in chemical reactions taking place at temperatures below or around 20 K, spectroscopists could make very precise measurements on slow molecules and molecular physicists could chart the potential energy surfaces more accurately. And the list continues. All of these experiments need slow molecules, with kinetic energies from around 10 cm-1 down to 0. Several designs of cold sources have already been made. The most interesting ones are presented. This work describes the design and the testing of a cold source based on the collisional cooling technique: the molecules of interest are cooled well below their freezing point by a precooled buffer gas. This way condensation is avoided. The source is a copper cell cooled to 4.2 K by an external liquid helium bath. The cell is filled with cold buffer gas (helium). The molecules of choice (ammonia) are injected through a narrow tube in the middle of the cell. The cold molecules leave the cell through a 1 millimeter hole. Two versions of pulsing techniques have been employed: a shutter blade which covers the source hole and opens it only for short moments, and a chopper that modulates the beam further downstream. Both produced pulse lengths around 1 millisecond. The source is tested in an experiment in which the emerging molecules are focused and detected. Time of flight technique is used to measure the kinetic energies. Two detectors have been employed: a microwave cavity to analyze the state of the molecules in the beam, and a mass spectrometer to measure the number density of the particles. The molecules coming out of the source hole are formed into a beam by an electrostatic quadrupole state selector. The quantum mechanical aspects and the elements of electrodynamics involved in the focusing are described. A computer simulation program is presented, which helped

  2. Molecular beam studies of reaction dynamics

    Energy Technology Data Exchange (ETDEWEB)

    Lee, Y.T. [Lawrence Berkeley Laboratory, CA (United States)

    1993-12-01

    The major thrust of this research project is to elucidate detailed dynamics of simple elementary reactions that are theoretically important and to unravel the mechanism of complex chemical reactions or photochemical processes that play important roles in many macroscopic processes. Molecular beams of reactants are used to study individual reactive encounters between molecules or to monitor photodissociation events in a collision-free environment. Most of the information is derived from measurement of the product fragment energy, angular, and state distributions. Recent activities are centered on the mechanisms of elementary chemical reactions involving oxygen atoms with unsaturated hydrocarbons, the dynamics of endothermic substitution reactions, the dependence of the chemical reactivity of electronically excited atoms on the alignment of excited orbitals, the primary photochemical processes of polyatomic molecules, intramolecular energy transfer of chemically activated and locally excited molecules, the energetics of free radicals that are important to combustion processes, the infrared-absorption spectra of carbonium ions and hydrated hydronium ions, and bond-selective photodissociation through electric excitation.

  3. Quantum Molecular Dynamics Simulations of Nanotube Tip Assisted Reactions

    Science.gov (United States)

    Menon, Madhu

    1998-01-01

    In this report we detail the development and application of an efficient quantum molecular dynamics computational algorithm and its application to the nanotube-tip assisted reactions on silicon and diamond surfaces. The calculations shed interesting insights into the microscopic picture of tip surface interactions.

  4. Kinetics of self-induced nucleation and optical properties of GaN nanowires grown by plasma-assisted molecular beam epitaxy on amorphous Al{sub x}O{sub y}

    Energy Technology Data Exchange (ETDEWEB)

    Sobanska, M., E-mail: sobanska@ifpan.edu.pl; Zytkiewicz, Z. R.; Klosek, K.; Tchutchulashvili, G. [Institute of Physics, Polish Academy of Sciences, Al. Lotnikow 32/46, 02-668 Warsaw (Poland); Korona, K. P. [Faculty of Physics, University of Warsaw, Pasteura 5, 02-093 Warsaw (Poland)

    2015-11-14

    Nucleation kinetics of GaN nanowires (NWs) by molecular beam epitaxy on amorphous Al{sub x}O{sub y} buffers deposited at low temperature by atomic layer deposition is analyzed. We found that the growth processes on a-Al{sub x}O{sub y} are very similar to those observed on standard Si(111) substrates, although the presence of the buffer significantly enhances nucleation rate of GaN NWs, which we attribute to a microstructure of the buffer. The nucleation rate was studied vs. the growth temperature in the range of 720–790 °C, which allowed determination of nucleation energy of the NWs on a-Al{sub x}O{sub y} equal to 6 eV. This value is smaller than 10.2 eV we found under the same conditions on nitridized Si(111) substrates. Optical properties of GaN NWs on a-Al{sub x}O{sub y} are analyzed as a function of the growth temperature and compared with those on Si(111) substrates. A significant increase of photoluminescence intensity and much longer PL decay times, close to those on silicon substrates, are found for NWs grown at the highest temperature proving their high quality. The samples grown at high temperature have very narrow PL lines. This allowed observation that positions of donor-bound exciton PL line in the NWs grown on a-Al{sub x}O{sub y} are regularly lower than in samples grown directly on silicon suggesting that oxygen, instead of silicon, is the dominant donor. Moreover, PL spectra suggest that total concentration of donors in GaN NWs grown on a-Al{sub x}O{sub y} is lower than in those grown under similar conditions on bare Si. This shows that the a-Al{sub x}O{sub y} buffer efficiently acts as a barrier preventing uptake of silicon from the substrate to GaN.

  5. Reactive Collisions in Crossed Molecular Beams

    Science.gov (United States)

    Herschbach, D. R.

    1962-02-01

    The distribution of velocity vectors of reaction products is discussed with emphasis on the restrictions imposed by the conservation laws. The recoil velocity that carries the products away from the center of mass shows how the energy of reaction is divided between internal excitation and translation. Similarly, the angular distributions, as viewed from the center of mass, reflect the partitioning of the total angular momentum between angular momenta of individual molecules and orbital angular momentum associated with their relative motion. Crossed-beam studies of several reactions of the type M + RI yields R + MI are described, where M = K, Rb, Cs, and R = CH{sub 3}, C{sub 3}H{sub 5}, etc. The results show that most of the energy of reaction goes into internal excitation of the products and that the angular distribution is quite anisotropic, with most of the MI recoiling backward (and R forward) with respect to the incoming K beam. (auth)

  6. Molecule-surface scattering with velocity-controlled molecular beams

    International Nuclear Information System (INIS)

    The production of cold molecular beams with a tunable velocity by means of pulsed electric fields, known as Stark deceleration, is now mature and convenient. At the same time, molecular beam experiments that use traditional ways of velocity manipulation have been commonly used to study different aspects of molecule-surface interactions in the regime of high kinetic energy. We present a new generation of molecule-surface scattering machine, which brings the advantages of Stark decelerated molecular beams to the field of surface physics. Using this machine, CO molecules will be scattered at surfaces, quantum-state selective with respect to both impacting and scattered molecules, while providing a tunable velocity in the range of 1000 to 20 m/s with an exceptional translational energy resolution.

  7. Molecular beam sampling of a hollow cathode arc

    International Nuclear Information System (INIS)

    This thesis deals with the description of the process of molecular beam sampling of a Hollow Cathode Arc. The aim of the study is twofold, i.e. investigation of the applicability of molecular beam sampling as a plasma diagnostic and the use of a Hollow Cathode Arc as a high intensity beam source for ground state atoms and metastable state atoms in the superthermal energy range. Suitable models are introduced, describing the process of molecular beam sampling of both ground state atoms and metastable state atoms. Fast ground state atoms produced by ion-atom collisions. The experimental facilities, i.e. the Hollow Cathode Arc, the time-of-flight machine and the dye laser system are described. And an alternative detection scheme for ground state atoms is presented and experimental results on the molecular beam sampling of a low density plasma (densities 1019-1020 m-3) in the long arc configuration are reported. The results on the short arc configuration (densities 1021-1022 m-3) are discussed. (Auth.)

  8. An Introduction to the Supersonic Molecular Beam Injection

    Institute of Scientific and Technical Information of China (English)

    2001-01-01

    Recently a new fuelling method with supersonic molecular beam injection (MBI) has been developed and used in the tokamaks experiments successfully. It is economical to develop and maintain. The advantages of supersonic MBI compared with the conventional of gas-puffing method are as follows: deep deposition of fuel, better fuelling efficiency, reduced recycling and pure plasma. Particle and energy confinement can be improved and density limit extended. This review described the Laval nozzle molecular beam and a simple collective model for the injection of a supersonic MBI into the tokamak plasma.

  9. Molecular characterization of microbial mutations induced by ion beam irradiation

    Energy Technology Data Exchange (ETDEWEB)

    Ichida, Hiroyuki [Graduate School of Science and Technology, Chiba University, Matsudo, Chiba 271-8510 (Japan); Accelerator Applications Research Group, Nishina Center for Accelerator-Based Science, RIKEN, Wako, Saitama 351-0198 (Japan)], E-mail: ichida@riken.jp; Matsuyama, Tomoki [Cellular Biochemistry Laboratory, Discovery Research Institute, RIKEN, Wako, Saitama 351-0198 (Japan); Ryuto, Hiromichi [Accelerator Operation Group, Nishina Center for Accelerator-Based Science, RIKEN, Wako, Saitama 351-0198 (Japan); Hayashi, Yoriko [Accelerator Applications Research Group, Nishina Center for Accelerator-Based Science, RIKEN, Wako, Saitama 351-0198 (Japan); Fukunishi, Nobuhisa [Accelerator Operation Group, Nishina Center for Accelerator-Based Science, RIKEN, Wako, Saitama 351-0198 (Japan); Abe, Tomoko [Accelerator Applications Research Group, Nishina Center for Accelerator-Based Science, RIKEN, Wako, Saitama 351-0198 (Japan); Koba, Takato [Graduate School of Science and Technology, Chiba University, Matsudo, Chiba 271-8510 (Japan)

    2008-03-01

    A positive selection system for gene disruption using a sucrose-sensitive transgenic rhizobium was established and used for the molecular characterization of mutations induced by ion beam irradiations. Single nucleotide substitutions, insertions, and deletions were found to occur in the sucrose sensitivity gene, sacB, when the reporter line was irradiated with highly accelerated carbon and iron ion beams. In all of the insertion lines, fragments of essentially the same sequence and of approximately 1188 bp in size were identified in the sacB regions. In the deletion lines, iron ions showed a tendency to induce larger deletions than carbon ions, suggesting that higher LET beams cause larger deletions. We found also that ion beams, particularly 'heavier' ion beams, can produce single gene disruptions and may present an effective alternative to transgenic approaches.

  10. Pulsed rotating supersonic source for merged molecular beams

    Science.gov (United States)

    Sheffield, Les; Hickey, Mark; Krasovitskiy, Vitaliy; Rathnayaka, Daya; Lyuksyutov, Igor; Herschbach, Dudley

    2012-10-01

    We continue the characterization of a pulsed rotating supersonic beam source. The original device was described by M. Gupta and D. Herschbach, J. Phys. Chem. A 105, 1626 (2001). The beam emerges from a nozzle near the tip of a hollow rotor which can be spun at high-speed to shift the molecular velocity distribution downward or upward over a wide range. Here we consider mostly the slowing mode. Introducing a pulsed gas inlet system, and a shutter gate eliminate the main handicap of the original device in which continuous gas flow imposed high background pressure. The new version provides intense pulses, of duration 0.1--0.6 ms (depending on rotor speed) and containing ˜10^12 molecules at lab speeds as low as 35 m/s and ˜10^15 molecules at 400 m/s. Beams of any molecule available as a gas can be slowed (or speeded); e.g., we have produced slow and fast beams of rare gases, O2, NO2, NH3, and SF6. For collision experiments, the ability to scan the beam speed by merely adjusting the rotor is especially advantageous when using two merged beams. By closely matching the beam speeds, very low relative collision energies can be attained without making either beam very slow.

  11. Atmospheric processes on ice nanoparticles in molecular beams

    Czech Academy of Sciences Publication Activity Database

    Fárník, Michal; Poterya, Viktoriya

    2014-01-01

    Roč. 2, č. 2014 (2014), s. 4. ISSN 2296-2646 R&D Projects: GA ČR GA203/09/0422; GA ČR GAP208/11/0161 Institutional support: RVO:61388955 Keywords : molecular beams * photodissociation * water clusters Subject RIV: BL - Plasma and Gas Discharge Physics

  12. Molecular Beam Epitaxy of LiMnAs

    OpenAIRE

    Novak, V.; Cukr, M.; Soban, Z.; Jungwirth, T.; Marti, X.; Holy, V.; Horodyska, P.; Nemec, P.

    2010-01-01

    We report on the molecular beam epitaxy (MBE) growth of high crystalline quality LiMnAs. The introduction of a group-I alkali metal element Li with flux comparable to fluxes of Mn and As has not caused any apparent damage to the MBE system after as many as fifteen growth cycles performed on the system to date.

  13. Gravity Assist and Scattering off AGB Stars off Molecular Clouds

    Directory of Open Access Journals (Sweden)

    Ahmad H. Abdelhadi

    2009-01-01

    Full Text Available The scattering of stellar orbits by galactic molecular clouds is studied in hope of explaining isotopic peculiarities of presolar grains from Asymptotic Giant Branch (AGB stars. Silicon isotopic anomalies found in the mainstream Silicon Carbide (SiC grains are observed to have heavy isotopes enriched. To explain the isotopic heaviness I propose that AGB stars that formed in the interior region of the galaxy, with metallicity higher than solar, change their orbits during close encounters with molecular clouds. The AGB stars give up their SiC grains in winds deposited in the solar neighborhood prior to the birth of the Sun. I model the dynamics by superposing on a standard axisymmetric galactic potential the discrete potentials of thousands of molecular clouds moving in constant circular orbits. Gravity assist occurs when a star scattered into a crossing orbit by one cloud experiences forward scattering from a second cloud.

  14. Pulsed rotating supersonic source used with merged molecular beams

    OpenAIRE

    Sheffield, L.; Hickey, M.; Krasovitskiy, V.; Rathnayaka, K. D. D.; Lyuksyutov, I. F.; Herschbach, D. R.

    2012-01-01

    We describe a pulsed rotating supersonic beam source, evolved from an ancestral device [M. Gupta and D. Herschbach, J. Phys. Chem. A 105, 1626 (2001)]. The beam emerges from a nozzle near the tip of a hollow rotor which can be spun at high-speed to shift the molecular velocity distribution downward or upward over a wide range. Here we consider mostly the slowing mode. Introducing a pulsed gas inlet system, cryocooling, and a shutter gate eliminated the main handicap of the original device, in...

  15. Molecular beam sampling system with very high beam-to-background ratio: The rotating skimmer concept

    International Nuclear Information System (INIS)

    A novel method of reducing the background pressure in a vacuum system used for sampling a molecular beam from a high pressure region is presented. A triple differential pumping stage is constructed with a chopper with rotating skimmer within the first pumping stage, which serves effectively as a valve separating periodically the vacuum system from the ambient environment. The mass spectrometry measurement of the species in the molecular beam show an excellent beam-to-background ratio of 14 and a detection limit below 1 ppm. The potential of this method for detection of low density reactive species in atmospheric pressure plasmas is demonstrated for the detection of oxygen atoms generated in an atmospheric pressure microplasma source.

  16. Atmospheric pressure plasma analysis by modulated molecular beam mass spectrometry

    International Nuclear Information System (INIS)

    Fractional number density measurements for a rf plasma 'needle' operating at atmospheric pressure have been obtained using a molecular beam mass spectrometer (MBMS) system designed for diagnostics of atmospheric plasmas. The MBMS system comprises three differentially pumped stages and a mass/energy analyzer and includes an automated beam-to-background measurement facility in the form of a software-controlled chopper mechanism. The automation of the beam modulation allows the neutral components in the plasma to be rapidly and accurately measured using the mass spectrometer by threshold ionization techniques. Data are reported for plasma generated by a needle plasma source operated using a helium/air mixture. In particular, data for the conversion of atmospheric oxygen and nitrogen into nitric oxide are discussed with reference to its significance for medical applications such as disinfecting wounds and dental cavities and for microsurgery

  17. Molecular beam brightening by shock-wave suppression

    CERN Document Server

    Segev, Yair; Akerman, Nitzan; Shagam, Yuval; Luski, Alon; Karpov, Michael; Narevicius, Julia; Narevicius, Edvardas

    2016-01-01

    Supersonic beams are a prevalent source of cold molecules utilized in the study of chemical reactions, atom interferometry, gas-surface interactions, precision spectroscopy, molecular cooling and more. The triumph of this method emanates from the high densities produced in relation to other methods, however beam density remains fundamentally limited by interference with shock waves reflected from collimating surfaces. Here we show experimentally that this shock interaction can be reduced or even eliminated by cryo-cooling the interacting surface. An increase in beam density of nearly an order of magnitude was measured at the lowest surface temperature, with no further fundamental limitation reached. Visualization of the shock waves by plasma discharge and reproduction with direct simulation Monte Carlo calculations both indicate that the suppression of the shock structure is partially caused by lowering the momentum flux of reflected particles, and significantly enhanced by the adsorption of particles to the ...

  18. Atmospheric processes on ice nanoparticles in molecular beams

    OpenAIRE

    Michal eFárník; Viktoriya ePoterya

    2014-01-01

    This review summarizes some recent experiments with ice nanoparticles (large water clusters) in molecular beams and outlines their atmospheric relevance: (1) Investigation of mixed water–nitric acid particles by means of the electron ionization and sodium doping combined with photoionization revealed the prominent role of HNO3 molecule as the condensation nuclei. (2) The uptake of atmospheric molecules by water ice nanoparticles has been studied, and the pickup cross sections for some molecul...

  19. Induced base transistor fabricated by molecular beam epitaxy

    Science.gov (United States)

    Chang, C.-Y.; Liu, W. C.; Jame, M. S.; Wang, Y. H.; Luryi, S.

    1986-09-01

    A novel three-terminal hot-electron device, the induced base transistor (IBT), has been fabricated by molecular beam epitaxy. Two-dimensional electron gas induced by the applied collector field in an undoped GaAs quantum well is used as the base of the IBT. The common-base current gain alpha has been achieved as high as 0.96 under a collector bias of 2.5 V and an emitter current of 3 mA.

  20. A Bright, Guided Molecular Beam With Hydrodynamic Enhancement

    OpenAIRE

    Patterson, David; Doyle, John M.

    2007-01-01

    We realize a novel high flux source of cold atoms and molecules employing hydrodynamic enhancement of an effusive aperture at cryogenic temperatures. Molecular oxygen from the source is coupled to a magnetic guide, delivering a cold, continuous, guided flux of 3e12 oxygen molecules per second, with a molecule temperature of a few kelvin. The dynamics of the source are studied by creating and spectroscopically analyzing high-flux beams of atomic ytterbium.

  1. Wafer curvature in molecular beam epitaxy grown heterostructures

    International Nuclear Information System (INIS)

    Wafer curvature in strained molecular beam epitaxy grown heterostructures has been studied. Theories on semiconductor wafer curvature have been re-examined and errors that have persisted in the literature have been corrected. This paper presents an approach to calculating the wafer curvature for an arbitrary multilayer system using basic physical equations. X-ray diffraction measurements have been performed to measure the radius of curvature of several samples and the results are in good agreement with the theory presented here

  2. Experimental investigation of molecular beam injection in HL-1 tokamak

    International Nuclear Information System (INIS)

    A new method of gas puffing is presented. The molecular beam, formed by high pressure deuterium gas through Larval nozzle and skimmer slit, is injected into the HL-1 vacuum vessel. The deuterium molecular current from the nozzle passing through the skimmer is about 3 x 1020/s. At the line average electron density of 5.2 x 1019 m-3, the beam velocity is about 100 m/s. As the plasma density and temperature increasing, the influxes of deuterium particles attenuate quickly. When the molecular beam injection (MBI) just returned to normal gas puffing, the Dα emission rapidly decreases, meanwhile, the particles move toward plasma center, the electron density is continuously peaking. The line average electron density rising lasts 45 ms. The thermal energy of plasma and confinement time for particles and energy are also increasing. the MBI is a direct and efficient gas fuelling mode, and the injected particles can reach to inside about 8 cm of plasma and q ≅ 2 confinement region. Its efficiency of injection is about 50%. After the MBI, the particle recycling coefficient R on the wall is 0.6 which is 10% lower than that of normal gas puffing

  3. Electron beam-assisted healing of nanopores in magnesium alloys

    Science.gov (United States)

    Zheng, He; Liu, Yu; Cao, Fan; Wu, Shujing; Jia, Shuangfeng; Cao, Ajing; Zhao, Dongshan; Wang, Jianbo

    2013-01-01

    Nanopore-based sensing has emerged as a promising candidate for affordable and powerful DNA sequencing technologies. Herein, we demonstrate that nanopores can be successfully fabricated in Mg alloys via focused electron beam (e-beam) technology. Employing in situ high-resolution transmission electron microscopy techniques, we obtained unambiguous evidence that layer-by-layer growth of atomic planes at the nanopore periphery occurs when the e-beam is spread out, leading to the shrinkage and eventual disappearance of nanopores. The proposed healing process was attributed to the e-beam-induced anisotropic diffusion of Mg atoms in the vicinity of nanopore edges. A plausible diffusion mechanism that describes the observed phenomena is discussed. Our results constitute the first experimental investigation of nanopores in Mg alloys. Direct evidence of the healing process has advanced our fundamental understanding of surface science, which is of great practical importance for many technological applications, including thin film deposition and surface nanopatterning. PMID:23719630

  4. Pulsed rotating supersonic source used with merged molecular beams

    CERN Document Server

    Sheffield, L; Krasovitskiy, V; Rathnayaka, K D D; Lyuksyutov, I F; Herschbach, D R

    2012-01-01

    We describe a pulsed rotating supersonic beam source, evolved from an ancestral device [M. Gupta and D. Herschbach, J. Phys. Chem. A 105, 1626 (2001)]. The beam emerges from a nozzle near the tip of a hollow rotor which can be spun at high-speed to shift the molecular velocity distribution downward or upward over a wide range. Here we consider mostly the slowing mode. Introducing a pulsed gas inlet system, cryocooling, and a shutter gate eliminated the main handicap of the original device, in which continuous gas flow imposed high background pressure. The new version provides intense pulses, of duration 0.1-0.6 ms (depending on rotor speed) and containing ~10^12 molecules at lab speeds as low as 35 m/s and ~ 10^15 molecules at 400 m/s. Beams of any molecule available as a gas can be slowed (or speeded); e.g., we have produced slow and fast beams of rare gases, O2, Cl2, NO2, NH3, and SF6. For collision experiments, the ability to scan the beam speed by merely adjusting the rotor is especially advantageous when...

  5. Molecular beam studies with a time-of-flight machine

    International Nuclear Information System (INIS)

    The study concerns the development of the time-of-flight method for the velocity analysis of molecular beams and its application to the measurement of the velocity dependence of the total cross-section of the noble gases. It reviews the elastic scattering theory, both in the framework of classical mechanics and in the quantum mechanical description. Attention is paid to the semiclassical correspondence of classical particle trajectories with the partial waves of the quantum mechanical solution. The total cross-section and the small angle differential cross-section are discussed with special emphasis on their relation. The results of this chapter are used later to derive the correction on the measured total cross-section due to the finite angular resolution of the apparatus. Reviewed also is the available information on the intermolecular potential of the Ar-Ar system. Then a discussion of the measurement of total cross-sections with the molecular beam method and the time-of-flight method is compared to other methods used. It is shown that the single burst time-of-flight method can be developed into a reliable and well-calibrated method for the analysis of the velocity distribution of molecular beams. A comparison of the single burst time-of-flight method with the cross-correlation time-of-flight method shows that the two methods are complementary and that the specific experimental circumstances determine which method is to be preferred. Molecular beam sources are discussed. The peaking factor formalism is introduced and helps to compare the performance of different types of sources. The effusive and the supersonic source are treated and recent experimental results are given. The multichannel source is treated in more detail. For the opaque mode, an experimental investigation of the velocity distribution and the angular distribution of the flow pattern is presented. Comparison of these results with Monte Carlo calculations for free molecular flow in a cylindrical

  6. Ion assistance effects on electron beam deposited MgF sub 2 films

    CERN Document Server

    Alvisi, M; Della Patria, A; Di Giulio, M; Masetti, E; Perrone, M R; Protopapa, M L; Tepore, A

    2002-01-01

    Thin films of MgF sub 2 have been deposited by the ion-assisted electron-beam evaporation technique in order to find out the ion beam parameters leading to films of high laser damage threshold whose optical properties are stable under uncontrolled atmosphere conditions. It has been found that the ion-assisted electron-beam evaporation technique allows getting films with optical properties (refraction index and extinction coefficient) of high environmental stability by properly choosing the ion-source voltage and current. But, the laser damage fluence at 308 nm was quite dependent on the assisting ion beam parameters. Larger laser damage fluences have been found for the films deposited by using assisting ion beams delivered at lower anode voltage and current values. It has also been found that the films deposited without ion assistance were characterized by the highest laser damage fluence (5.9 J/cm sup 2) and the lowest environmental stability. The scanning electron microscopy analysis of the irradiated areas...

  7. Titania-assisted electron-beam and synchrotron lithography

    Science.gov (United States)

    Skorb, Ekaterina V.; Grützmacher, Detlev; Dais, Christian; Guzenko, Vitaliy A.; Sokolov, Valeriy G.; Gaevskaya, Tatjana V.; Sviridov, Dmitry V.

    2010-08-01

    Novel imaging layer technology for electron-beam and extreme-ultraviolet lithographic processes based upon generation of Pd nanoparticles in the Pd2 + -loaded TiO2 films was developed. The electroless metallization of the patterned TiO2:Pd2 + films yields both negative and positive nickel images with resolution down to ~ 100 nm.

  8. Crossed molecular beam studies of unimolecular reaction dynamics

    International Nuclear Information System (INIS)

    The study of seven radical-molecule reactions using the crossed molecular beam technique with supersonic nozzle beams is reported. Product angular and velocity distributions were obtained and compared with statistical calculations in order to identify dynamical features of the reactions. In the reaction of chlorine and fluorine atoms with vinyl bromide, the product energy distributions are found to deviate from predictions of the statistical model. A similar effect is observed in the reaction of chlorine atoms with 1, 2 and 3-bromopropene. The reaction of oxygen atoms with ICl and CF3I has been used to obtain an improved value of the IO bond energy, 55.0 +- 2.0 kcal mol-1. In all reactions studied, the product energy and angular distributions are found to be coupled, and this is attributed to a kinematic effect of the conservation of angular momentum

  9. Titania-assisted electron-beam and synchrotron lithography

    Energy Technology Data Exchange (ETDEWEB)

    Skorb, Ekaterina V; Sviridov, Dmitry V [Chemistry Department, Belarusian State University, Leningradskaya 14, 22030 Minsk (Belarus); Gruetzmacher, Detlev; Dais, Christian [Laboratory for Micro- and Nanotechnology, Paul Scherrer Institut, CH-5232 Villigen (Switzerland); Guzenko, Vitaliy A [Department of Bio- and Nanosystems, Research Center Juelich, D-52425 Juelich (Germany); Sokolov, Valeriy G; Gaevskaya, Tatjana V, E-mail: skorb@mpikg.mpg.de [Institute for Physico-Chemical Problems, Belarusian State University, Leningradskaya 14, 22030 Minsk (Belarus)

    2010-08-06

    Novel imaging layer technology for electron-beam and extreme-ultraviolet lithographic processes based upon generation of Pd nanoparticles in the Pd{sup 2+}-loaded TiO{sub 2} films was developed. The electroless metallization of the patterned TiO{sub 2}:Pd{sup 2+} films yields both negative and positive nickel images with resolution down to {approx} 100 nm.

  10. Kinetic roughening in models of molecular-beam epitaxy growth

    International Nuclear Information System (INIS)

    A brief survey of recent progress in understanding the kinetic roughening in growth models with surface diffusion, which are relevant for growth by molecular-beam epitaxy, in given. The main emphasis is on results of computer simulations. Properties of several different models are described and compared. In particular, results for two models, the Wolf-Villain model (and its modifications) and the full diffusion model, in 1+1, 2+1 and also in higher dimensions are presented. The asymptotic behaviour of the Wolf-Villain model is of an Edwards-Wilkinson type. Both models show an unusual scaling behaviour of the height-height correlation function

  11. A molecular beam epitaxy facility for in situ neutron scattering

    International Nuclear Information System (INIS)

    A molecular beam epitaxy (MBE) facility has been built to enable in situ neutron scattering measurements during growth of epitaxial layers. While retaining the full capabilities of a research MBE chamber, this facility has been optimized for polarized neutron reflectometry measurements. Optimization includes a compact lightweight portable design, a neutron window, controllable magnetic field, deposition across a large 76 mm diameter sample with exceptional flux uniformity, and sample temperatures continuously controllable from 38 to 1375 K. A load lock chamber allows for sample insertion, storage of up to 4 samples, and docking with other facilities. The design and performance of this chamber are described here.

  12. A prototype of a beam steering assistant tool for accelerator operations

    International Nuclear Information System (INIS)

    The CEBAF accelerator provides nuclear physics experiments at Jefferson Lab with high quality electron beams. Three experimental end stations can simultaneously receive the beams with different energies and intensities. For each operational mode, the accelerator setup procedures are complicated and require very careful checking of beam spot sizes and positions on multiple beam viewers. To simplify these procedures and make them reproducible, a beam steering assistant GUI tool has been created. The tool is implemented as a multi-window control screen. The screen has an interactive graphical object window, which is an overlay on top of a digitized live video image from a beam viewer. It allows a user to easily create and edit any graphical objects consisting of text, ellipses, and lines, right above the live beam viewer image and then save them in a file that is called a beam steering template. The template can show, for example, the area within which the beam must always be on the viewer. Later, this template can be loaded in the interactive graphical object window to help accelerator operators steer the beam to the specified area on the viewer

  13. Automated Geometry assisted PEC for electron beam direct write nanolithography

    Energy Technology Data Exchange (ETDEWEB)

    Ocola, Leonidas E.; Gosztola, David J.; Rosenmann, Daniel; Lopez, Gerald Gabriel

    2015-12-01

    Nanoscale geometry assisted proximity effect correction (NanoPEC) is demonstrated to improve PEC for nanoscale structures over standard PEC, in terms of feature sharpness for sub-100 nm structures. The method was implemented onto an existing commercially available PEC software. Plasmonic arrays of crosses were fabricated using regular PEC and NanoPEC, and optical absorbance was measured. Results confirm that the improved sharpness of the structures leads to increased sharpness in the optical absorbance spectrum features. We also demonstrated that this method of PEC is applicable to arbitrary shaped structures beyond crosses.

  14. Biaxially textured Ag films by grazing ion beam assisted deposition

    International Nuclear Information System (INIS)

    The effect of grazing incidence 4 keV Ar+ ion irradiation on the early stage of Ag thin film growth on amorphous Si was investigated. The double effect of axial and surface channeling resulted in grains oriented along the axis in-plane, while the (111) out-of-plane texture was maintained. A slight average tilt of the (111) out-of-plane texture axis towards the ion beam direction is proposed to result from the difference between terrace and step edge sputtering yield. The observed tilt is consistent with a minimum erosion orientation of the surface profile.

  15. Characteristics of MoSx films deposited by ion beam assistance

    International Nuclear Information System (INIS)

    For MoSx films deposited by ion beam assistance, the effect of bombarded ion species, deposition mode, substrate materials and humidity of store environment etc on the properties of these films has been studied. Experimental results indicated that the effect of these factors on films can not be ignored both in the film's deposition and in uses

  16. Ion-beam assisted laser fabrication of sensing plasmonic nanostructures

    CERN Document Server

    Kuchmizhak, Aleksandr; Vitrik, Oleg; Kulchin, Yuri; Milichko, Valentin; Makarov, Sergey; Kudryashov, Sergey

    2015-01-01

    Simple high-performance two-stage hybrid technique was developed for fabrication of different plasmonic nanostructures, including nanorods, nanorings, as well as more complex structures on glass substrates. In this technique a thin noble metal film on a dielectric substrate is irradiated by a tightly focused single nanosecond laser pulse and then the modified region is slowly polished by an accelerated argon ion (Ar+) beam. As a result, each nanosecond laser pulse locally modifies the initial metal film through initiation of fast melting and subsequent hydrodynamic processes, while the following Ar+-ion polishing removes the rest of the film, revealing the hidden topography features and fabricating separate plasmonic structures on the glass substrate. We demonstrate that the shape and lateral size of the resulting functional plasmonic nanostructures depends on the laser pulse energy and metal film thickness, while subsequent Ar+-ion polishing enables to vary height of the resulting nanostructures. The plasmon...

  17. Neutral Molecular ZnX (X = O, OH, N) Compounds In A Molecular Beam

    Energy Technology Data Exchange (ETDEWEB)

    Cannavo, D.; Knopp, G.; Radi, P.; Beaud, P.; Tulej, M.; Bodek, P.; Gerber, T.; Wokaun, A.

    2005-03-01

    Neutral ZnO and ZnOH molecules could be produced in a molecular beam by expansion of laser ablated zinc together with H{sub 2}O, O{sub 2} or N{sub 2}O seeded in a rare gas (Ar, Ne, He). The abundance of ZnOH produced in our experiments exceeds the one of ZnO and ZnN by orders of magnitude if H{sub 2}O is present in the sys-tem. Small quantities of (ZnO)2H and Zn{sub 2}(OH)3 compounds could also be observed. To our knowledge this is the first evidence for the occurrence of neutral ZnO and ZnOH molecules in a molecular beam. (author)

  18. A molecular beam/quadrupole mass spectrometer system with synchronized beam modulation and digital waveform analysis

    Science.gov (United States)

    Pellett, G. L.; Adams, B. R.

    1983-01-01

    A performance evaluation is conducted for a molecular beam/mass spectrometer (MB/MS) system, as applied to a 1-30 torr microwave-discharge flow reactor (MWFR) used in the formation of the methylperoxy radical and a study of its subsequent destruction in the presence or absence of NO(x). The modulated MB/MS system is four-staged and differentially pumped. The results obtained by the MWFR study is illustrative of overall system performance, including digital waveform analysis; significant improvements over previous designs are noted in attainable S/N ratio, detection limit, and accuracy.

  19. Structural and ferroelectric properties of BaTiO 3/YBa 2Cu 3O 7 heterostructures prepared by laser molecular beam epitaxy

    Science.gov (United States)

    Wang, H. S.; Liu, Y. W.; Ma, K.; Peng, Z. Q.; Cui, D. F.; Lu, H. B.; Zhou, Y. L.; Chen, Z. H.; Li, L.; Yang, G. Z.

    1997-08-01

    Heteroepitaxial BaTiO 3(BTO)/YBa 2Cu 3O 7(YBCO) thin films were grown on (100) SrTiO 3(STO) substrates by ozone assistant laser molecular beam epitaxy (L sbnd MBE). The results show that by using this technique, high quality ferroelectric/superconductor heterostructures with high crystalline quality and desirable device performance can be obtained.

  20. Ion-beam assisted laser fabrication of sensing plasmonic nanostructures

    Science.gov (United States)

    Kuchmizhak, Aleksandr; Gurbatov, Stanislav; Vitrik, Oleg; Kulchin, Yuri; Milichko, Valentin; Makarov, Sergey; Kudryashov, Sergey

    2016-01-01

    Simple high-performance, two-stage hybrid technique was developed for fabrication of different plasmonic nanostructures, including nanorods, nanorings, as well as more complex structures on glass substrates. In this technique, a thin noble-metal film on a dielectric substrate is irradiated by a single tightly focused nanosecond laser pulse and then the modified region is slowly polished by an accelerated argon ion (Ar+) beam. As a result, each nanosecond laser pulse locally modifies the initial metal film through initiation of fast melting and subsequent hydrodynamic processes, while the following Ar+-ion polishing removes the rest of the film, revealing the hidden topography features and fabricating separate plasmonic structures on the glass substrate. We demonstrate that the shape and lateral size of the resulting functional plasmonic nanostructures depend on the laser pulse energy and metal film thickness, while subsequent Ar+-ion polishing enables to vary height of the resulting nanostructures. Plasmonic properties of the fabricated nanostructures were characterized by dark-field micro-spectroscopy, Raman and photoluminescence measurements performed on single nanofeatures, as well as by supporting numerical calculations of the related electromagnetic near-fields and Purcell factors. The developed simple two-stage technique represents a new step towards direct large-scale laser-induced fabrication of highly ordered arrays of complex plasmonic nanostructures.

  1. Atmospheric processes on ice nanoparticles in molecular beams

    Directory of Open Access Journals (Sweden)

    Michal eFárník

    2014-02-01

    Full Text Available This review summarizes some recent experiments with ice nanoparticles (large water clusters in molecular beams and outlines their atmospheric relevance: (1 Investigation of mixed water–nitric acid particles by means of the electron ionization and sodium doping combined with photoionization revealed the prominent role of HNO3 molecule as the condensation nuclei. (2 The uptake of atmospheric molecules by water ice nanoparticles has been studied, and the pickup cross sections for some molecules exceed significantly the geometrical sizes of the ice nanoparticles. (3 Photodissociation of hydrogen halides on water ice particles has been shown to proceed via excitation of acidically dissociated ion pair and subsequent biradical generation and H3O dissociation. The photodissociation of CF2Cl2 molecule in clusters is also mentioned. Possible atmospheric consequences of all these results are briefly discussed.

  2. Molecular beam-thermal hydrogen desorption from palladium

    International Nuclear Information System (INIS)

    Among the most efficient techniques for hydrogen desorption monitoring, thermal desorption mass spectrometry is a very sensitive one, but in certain cases can give rise to uptake misleading results due to residual hydrogen partial pressure background variations. In this work one develops a novel thermal desorption variant based on the effusive molecular beam technique that represents a significant improvement in the accurate determination of hydrogen mass absorbed on a solid sample. The enhancement in the signal-to-noise ratio for trace hydrogen is on the order of 20%, and no previous calibration with a chemical standard is required. The kinetic information obtained from the hydrogen desorption mass spectra (at a constant heating rate of 1 deg. C/min) accounts for the consistency of the technique.

  3. Crossed-molecular-beams reactive scattering of oxygen atoms

    International Nuclear Information System (INIS)

    The reactions of O(3P) with six prototypical unsaturated hydrocarbons, and the reaction of O(1D) with HD, have been studied in high-resolution crossed-molecular-beams scattering experiments with mass-spectrometric detection. The observed laboratory-product angular and velocity distributions unambiguously identify parent-daughter ion pairs, distinguish different neutral sources of the same ion, and have been used to identify the primary products of the reactions. The derived center-of-mass product angular and translational energy distributions have been used to elucidate the detailed reaction dynamics. These results demonstrate that O(3P)-unsaturated hydrocarbon chemistry is dominated by single bond cleavages, leading to radical products exclusively

  4. Characterisation of molecular thin films grown by organic molecular beam deposition

    CERN Document Server

    Bayliss, S M

    2000-01-01

    This work concerns the growth and characterisation of molecular thin films in an ultra high vacuum regime by organic molecular beam deposition (OMBD). Films of three different molecular materials are grown, namely free base phthalocyanine (H sub 2 Pc), perylene 3,4,9,10-tetracarboxylic dianhydride (PTCDA) and aluminium tris-8-hydroxyquinoline (Alq sub 3). The relationship between the growth parameters such as film thickness, growth rate, and substrate temperature during and after growth, and the structural, optical and morphological properties of the film are investigated. These investigations are carried out using various ex-situ techniques. X-ray diffraction, Raman spectroscopy and electronic absorption spectroscopy are used to probe the bulk film characteristics, whilst Nomarski microscopy and atomic force microscopy are used to study the surface morphology. Three different levels of influence of the growth parameters on the film properties are observed. In the case of H sub 2 Pc, two crystal phases are fo...

  5. Thermal stability of CdZnO thin films grown by molecular-beam epitaxy

    International Nuclear Information System (INIS)

    CdZnO thin films with near-band-edge (NBE) photoluminescence (PL) emission from 2.39 eV to 2.74 eV were grown by plasma-assisted molecular-beam epitaxy on c-plane sapphire substrates with 800 deg. C in situ annealing. CdZnO thin films evolve from pure wurtzite (wz) structure, to mixture of wz and rock-salt (rs) structures confirmed by X-ray diffraction studies. Rapid-thermo-annealing (RTA) was performed on in situ annealed CdZnO samples. Pure wz CdZnO shows insignificant NBE PL peak shift after RTA, while mixture structure CdZnO shows evident blue shifts due to phase change after annealing, indicating the rs phase CdZnO changes to wz phase CdZnO during RTA process.

  6. Microstructure of InxGa1−xN nanorods grown by molecular beam epitaxy

    International Nuclear Information System (INIS)

    Transmission electron microscopy is used to examine the structure and composition of InxGa1−xN nanorods grown by plasma-assisted molecular beam epitaxy. The results confirm a core–shell structure with an In-rich core and In-poor shell resulting from axial and lateral growth sectors respectively. Atomic resolution mapping by energy-dispersive x-ray microanalysis and high angle annular dark field imaging show that both the core and the shell are decomposed into Ga-rich and In-rich platelets parallel to their respective growth surfaces. It is argued that platelet formation occurs at the surfaces, through the lateral expansion of surface steps. Studies of nanorods with graded composition show that decomposition ceases for x ≥ 0.8 and the ratio of growth rates, shell:core, decreases with increasing In concentration. (paper)

  7. Molecular beam photoionization and gas-surface scattering

    International Nuclear Information System (INIS)

    The energetics of the ethylene ion-molecule reactions was investigated in more detail than previously possible in two body collision experiments by photoionization of the neutral van der Waals ethylene dimer. The stability of the (C2H4)+C2H4 ion-molecule collision complex has been determined to be 18.2 +- 0.5 kcal. The highest potential barriers along the reaction coordinate for decomposition of this collision complex into C4H7+ + H and C3H5+ + CH3 have been determined to be 0 +- 1.5 and 8.7 +- 1.5 kcal. In a similar manner, the energetics of the solvated ethylene dimer ion was investigated by the photoionization of the ethylene trimer. The absolute proton affinity of NH3 (203.6 +- 1.3 kcal/mole) and the proton solvation energies by more than one NH3 have been determined by molecular beam photoionization. In addition, the NH3+-NH3 interaction energy (0.79 +- 0.05 eV) was measured by photoionization of the neutral van der Waals dimer. These experiments have shown that photoionization of van der Waals clusters is a very powerful method of determining the energetics of gas phase proton solvation. The scattering of helium atomic beams from a high Miller index platinum surface that exhibits ordered, periodic steps on the atomic scale to probe the effect of atomic steps on the scattering distribution is explored. Rainbow scattering is observed when the step edges are perpendicular to the incident helium atoms. The design, construction and operation of a beam-surface scattering apparatus are described. The first data obtained in this apparatus are presented and the interesting dynamical aspects of the oxidation of D, D2 and CO are discussed. 75 references

  8. Bessel beams in tunable acoustic gradient index lenses and optical trap assisted nanolithography

    Science.gov (United States)

    McLeod, Euan

    2009-12-01

    Bessel beams are laser beams whose shape gives them nondiffracting and self-healing properties. They find use in applications requiring a narrow laser beam with a high depth of field. The first part of this thesis presents the study of a new adaptive optical element capable of generating rapidly tunable Bessel beams: the tunable acoustic gradient index (TAG) lens. This device uses piezoelectrically-generated acoustic waves to modulate a fluid's density and refractive index, leading to electrically controllable lensing behavior. Both modeling and experiment are used to explain the observed multiscale Bessel beams. Because the TAG lens operates at frequencies of hundreds of kilohertz, the effective Bessel beam cone angle continuously varies at timescales on the order of microseconds or smaller-orders of magnitude faster than other existing technologies. In addition, the TAG lens may be driven with a Fourier superposition of multiple frequencies, which could enable the generation of arbitrary patterns. The second part of this thesis presents the application of Bessel beams in a new probe-based direct-write optical nanolithography method called optical trap assisted nanolithography (OTAN). When compared to alternative techniques, OTAN makes probe placement and parallelization easier. The method uses Bessel beam optical tweezers to trap dielectric microspheres in close proximity to a surface. These microspheres are then illuminated with pulses from a second laser beam, whose fluence is enhanced directly below the microsphere by focusing and near-field effects to a level great enough to modify the substrate. This technique is used to produce 100 nm features, which are less than lambda/3, and whose sizes agree well with finite-difference time-domain models of the experiment. A demonstration is given of how the technique can be parallelized by trapping multiple microspheres with multiple beams and exposing all spheres in unison with a single pulsed beam. Finally, modeling

  9. The origin of chiral discrimination: supersonic molecular beam experiments and molecular dynamics simulations of collisional mechanisms

    International Nuclear Information System (INIS)

    The target of the present paper is the study of chirality effects in molecular dynamics from both a theoretical and an experimental point of view under the hypothesis of a molecular dynamics mechanism as the origin of chiral discrimination. This is a fundamental problem per se, and of possible relevance for the problem of the intriguing homochirality in Nature, so far lacking satisfactory explanations. We outline the steps that have been taken so far toward this direction, motivated by various experimental studies of supersonic molecular beams carried out in this laboratory, such as the detection of aligned oxygen in gaseous streams and further evidence on nitrogen, benzene and various hydrocarbons, showing the insurgence of molecular orientation in the dynamics of molecules in flows and in molecular collisions. Chiral effects are theoretically demonstrated to show up in the differential scattering of oriented molecules, also when impinging on surfaces. Focus on possible mechanisms for chiral bio-stereochemistry of oriented reactants may be of pre-biotical interest, for example when flowing in atmospheres of rotating bodies, specifically the planet Earth, as well as in vortex motions of celestial objects. Molecular dynamics simulations and experimental verifications of the hypothesis are reviewed and objectives of future research activity proposed.

  10. The origin of chiral discrimination: supersonic molecular beam experiments and molecular dynamics simulations of collisional mechanisms

    Energy Technology Data Exchange (ETDEWEB)

    Aquilanti, Vincenzo; Grossi, Gaia; Lombardi, Andrea; Maciel, Glauciete S; Palazzetti, Federico [Dipartimento di Chimica, Universita di Perugia, Via Elce di Sotto 8, 06123 Perugia (Italy)], E-mail: abulafia@dyn.unipg.it

    2008-10-15

    The target of the present paper is the study of chirality effects in molecular dynamics from both a theoretical and an experimental point of view under the hypothesis of a molecular dynamics mechanism as the origin of chiral discrimination. This is a fundamental problem per se, and of possible relevance for the problem of the intriguing homochirality in Nature, so far lacking satisfactory explanations. We outline the steps that have been taken so far toward this direction, motivated by various experimental studies of supersonic molecular beams carried out in this laboratory, such as the detection of aligned oxygen in gaseous streams and further evidence on nitrogen, benzene and various hydrocarbons, showing the insurgence of molecular orientation in the dynamics of molecules in flows and in molecular collisions. Chiral effects are theoretically demonstrated to show up in the differential scattering of oriented molecules, also when impinging on surfaces. Focus on possible mechanisms for chiral bio-stereochemistry of oriented reactants may be of pre-biotical interest, for example when flowing in atmospheres of rotating bodies, specifically the planet Earth, as well as in vortex motions of celestial objects. Molecular dynamics simulations and experimental verifications of the hypothesis are reviewed and objectives of future research activity proposed.

  11. Ion beam assisted deposition of nano-structured C:Ni films

    International Nuclear Information System (INIS)

    Nanostructures influence material properties dramatically due to size, shape and interface effects. Thus the control of the structure at the nanoscale is a key issue in nanomaterials science. The interaction of hyperthermal ions with solids is confined to the nanometer scale. Thus, it can be used to control the morphology evolution during multiphase film deposition. Ion-induced displacements occur in a thin surface layer of the growing film where they increase the atomic mobility for the phase separation. Here the growth-structure relationship of C:Ni (15 at.%) nanocomposite films grown by oblique incidence (45 ) ion beam assisted deposition is reported. The influences of the flux of an assisting Ar+ ion beam (0-140 eV) as well as of an elevated substrate temperature have been studied. The formation of elongated nickel nanoparticles is strongly promoted by the ion beam assistance. Moreover, the metal nanocolumns no longer align with the advancing surface, but with the incoming ions. A window of conditions is established within which the ion assistance leads to the formation of regular composition modulations with a well defined periodicity and tilt. As the dominating driving force for the pattern formation is of physical origin, this approach might be applicable to other immiscible systems.

  12. Indium-tin-oxide thin film deposited by a dual ion beam assisted e-beam evaporation system

    International Nuclear Information System (INIS)

    Indium-tin-oxide (ITO) thin films were deposited on polycarbonate (PC) substrates at low temperatures (<90 deg. C) by a dual ion beam assisted e-beam evaporation system, where one gun (gun 1) is facing ITO flux and the other gun (gun 2) is facing the substrate. In this experiment, effects of rf power and oxygen flow rate of ion gun 2 on the electrical and optical properties of depositing ITO thin films were investigated. At optimal deposition conditions, ITO thin films deposited on the PC substrates larger than 20 cmx20 cm showed the sheet resistance of less than 40 Ω/sq., the optical transmittance of above 90%, and the uniformity of about 5%

  13. A hydrogen ion beam method of molecular density measurement inside a 4.2-K beam tube

    International Nuclear Information System (INIS)

    In our first experiments on synchrotron radiation-induced photodesorption in a 4.2-K beam tube, the moleculm density was measured by room temperature ion gauges and RGAs outside the beam tube. The molecular density inside the 4.2-K beam tube was therefore unknown, since the mean molecular speed of photodesorbed molecules had not been measured. To determine the density inside the 4.2-K beam tube we have developed a direct method of measurement utilizing the neutralization of H+ beams, which are proportional to gas density. The hydrogen ion beams (up to 20 keV, ∼1 μA) are extracted from an rf ion source and guided into the cold beam tube by a bending magnet. The H0 and H- produced in the beam tube are magnetically separated from H- and detected with secondary electron multipliers (SEMs). Small superconducting dipole magnets located near the center of the beam tube allow a ∼20-cm segment of the injected ion beam to be offset a few mm from the injection axis; detection of H0 and H- produced along this offset segment provides a localized density measurement. If necessary, detector background due to synchrotron radiation photons can be discriminated against by gating the detector on between the bursts of synchrotron radiation. The experimental setup and initial data will be presented

  14. A hydrogen ion beam method of molecular density measurement inside a 4.2-K beam tube

    Energy Technology Data Exchange (ETDEWEB)

    Alinovsky, N.; Anashin, V.; Beschasny, P. [Budker Inst. of Nuclear Physics, Novosibirsk (Russian Federation)] [and others

    1994-06-01

    In our first experiments on synchrotron radiation-induced photodesorption in a 4.2-K beam tube, the moleculm density was measured by room temperature ion gauges and RGAs outside the beam tube. The molecular density inside the 4.2-K beam tube was therefore unknown, since the mean molecular speed of photodesorbed molecules had not been measured. To determine the density inside the 4.2-K beam tube we have developed a direct method of measurement utilizing the neutralization of H{sup +} beams, which are proportional to gas density. The hydrogen ion beams (up to 20 keV, {approximately}1 {mu}A) are extracted from an rf ion source and guided into the cold beam tube by a bending magnet. The H{sup 0} and H{sup {minus}} produced in the beam tube are magnetically separated from H{sup {minus}} and detected with secondary electron multipliers (SEMs). Small superconducting dipole magnets located near the center of the beam tube allow a {approximately}20-cm segment of the injected ion beam to be offset a few mm from the injection axis; detection of H{sup 0} and H{sup {minus}} produced along this offset segment provides a localized density measurement. If necessary, detector background due to synchrotron radiation photons can be discriminated against by gating the detector on between the bursts of synchrotron radiation. The experimental setup and initial data will be presented.

  15. Maskless formation of tungsten films by ion beam assisted deposition technique

    International Nuclear Information System (INIS)

    W films were deposited on n-GaAs by ion beam assisted deposition technique using low energy H2+ and Ar+, and film properties and residual damage in the substrate were investigated by measuring x-ray photoemission, current-voltage characteristics and deep level transient spectroscopy. Films with a resistivity of 10-5ohm · cm were formed. This paper reports that it was observed that damage can be reduced using the low energy beams and that Schottky contacts with n-factor of almost 1 and barrier height of 0.88 eV were formed

  16. Photoionization mass spectrometric studies of selected compounds in a molecular beam

    Energy Technology Data Exchange (ETDEWEB)

    Trott, W.M.

    1979-03-01

    Photoionization efficiency curves have been measured at moderate to high resolution for several species produced in supersonic molecular beams of acetone, acetone-d/sub 6/ and CS/sub 2/. The molecular beam photoionization mass spectrometer which has been assembled for this work is described. The performance of this instrument has been characterized by a number of experiments and calculations.

  17. Manufacture of high-speed neutral atomic and molecular beam apparatus and its characterization

    International Nuclear Information System (INIS)

    Our research group has been studying chemical reactivity at solid surfaces. For example, the study of O2/Si (001) reaction dynamics has been demonstrated with a hyperthermal molecular beam technique and synchrotron radiation photoemission spectroscopy. By using more reactive atomic and molecular beams with higher kinetic energy than supersonic molecular beams, it is expected that researches on surface chemical reactivity can be progressed. For this reason, we are developing a high-speed neutral atomic and molecular beam generator. This apparatus generates ion beams with a plasma ion source. The control of kinetic energy of neutral beams is performed by accelerating and decelerating the positive ion beams. Desirable ions are selected with a Wien filter: Passing through a gas cell they are neutralized by charge transfer reactions. In this report we describe characteristics of ion beams, which are generated by using oxygen as a sample gas, as well as neutral beams. When acceleration energy was 8 keV and 20 eV, total ion beam current was 52 μA, and 17 μA respectively. Characteristics of the mass separator were good, even when ion beam energy was 20 eV. Ion beam current was 5.5 μA for O+ and 11 μA for O2+, respectively (author)

  18. Development of Ultra Small Shock Tube for High Energy Molecular Beam Source

    Science.gov (United States)

    Miyoshi, Nobuya; Nagata, Shuhei; Kinefuchi, Ikuya; Shimizu, Kazuya; Takagi, Shu; Matsumoto, Yoichiro

    2008-12-01

    A molecular beam source exploiting a small shock tube is described for potential generation of high energy beam in a range of 1-5 eV without any undesirable impurities. The performance of a non-diaphragm type shock tube with an inner diameter of 2 mm was evaluated by measuring the acceleration and attenuation process of shock waves. With this shock tube installed in a molecular beam source, we measured the time-of-flight distributions of shock-heated beams, which demonstrated the ability of controlling the beam energy with the initial pressure ratio of the shock tube.

  19. Stress in ion-beam assisted silicon dioxide and tantalum pentoxide thin films

    CERN Document Server

    Sirotkina, N

    2003-01-01

    Ta sub 2 O sub 5 and SiO sub 2 thin films, deposited at room temperature by ion-beam sputtering (IBS) and dual ion-beam sputtering (DIBS), and SiO sub 2 films, deposited by reactive e-beam evaporation and ion-assisted deposition, were studied. The energy (150-600 eV) and ion-to-atom arrival ratio (0.27-2.0) of assisting argon and oxygen ions were varied. Influence of deposition conditions (deposition system geometry, nature and amount of gas in the chamber, substrate cleaning and ion-assistance parameters) on films properties (stress, composition, refractive index n sub 5 sub 0 sub 0 sub n sub m and extinction coefficient k sub 5 sub 0 sub 0 sub n sub m) was investigated. A scanning method, based on substrate curvature measurements by laser reflection and stress calculation using the Stoney equation, was employed. RBS showed that stoichiometric Ta sub 2 O sub 5 films contain impurities of Ar, Fe and Mo. Stoichiometric SiO sub 2 films also contain Ta impurity. Argon content increases with ion bombardment and, ...

  20. Molecular beam photoionization and gas-surface scattering

    Energy Technology Data Exchange (ETDEWEB)

    Ceyer, S.T.

    1979-09-01

    The energetics of the ethylene ion-molecule reactions was investigated in more detail than previously possible in two body collision experiments by photoionization of the neutral van der Waals ethylene dimer. The stability of the (C/sub 2/H/sub 4/)/sup +/C/sub 2/H/sub 4/ ion-molecule collision complex has been determined to be 18.2 +- 0.5 kcal. The highest potential barriers along the reaction coordinate for decomposition of this collision complex into C/sub 4/H/sub 7//sup +/ + H and C/sub 3/H/sub 5//sup +/ + CH/sub 3/ have been determined to be 0 +- 1.5 and 8.7 +- 1.5 kcal. In a similar manner, the energetics of the solvated ethylene dimer ion was investigated by the photoionization of the ethylene trimer. The absolute proton affinity of NH/sub 3/ (203.6 +- 1.3 kcal/mole) and the proton solvation energies by more than one NH/sub 3/ have been determined by molecular beam photoionization. In addition, the NH/sub 3//sup +/-NH/sub 3/ interaction energy (0.79 +- 0.05 eV) was measured by photoionization of the neutral van der Waals dimer. These experiments have shown that photoionization of van der Waals clusters is a very powerful method of determining the energetics of gas phase proton solvation. The scattering of helium atomic beams from a high Miller index platinum surface that exhibits ordered, periodic steps on the atomic scale to probe the effect of atomic steps on the scattering distribution is explored. Rainbow scattering is observed when the step edges are perpendicular to the incident helium atoms. The design, construction and operation of a beam-surface scattering apparatus are described. The first data obtained in this apparatus are presented and the interesting dynamical aspects of the oxidation of D, D/sub 2/ and CO are discussed. 75 references.

  1. Enhanced adhesion of Cu-W thin films by ion beam assisting bombardment implanting

    Institute of Scientific and Technical Information of China (English)

    ZHOU Ling-ping; WANG Ming-pu; WANG Rui; LI Zhou; ZHU Jia-jun; PENG Kun; LI De-yi; LI Shao-lu

    2008-01-01

    Cu-W thin film with high W content was deposited by dual-target DC-magnetron co-sputtering technology. Effects of the substrates surface treating technique on the adhesive strength of Cu-W thin films were studied. It is found that the technique of ion beam assisting bombardment implanting of W particles can remarkably improve the adhesive property of Cu-W thin films. Indentation and scratching test show that, the critical load is doubled over than the sample only sputter-cleaned by ion beam. The enhancing mechanism of ion beam assisting bombardment implanting of Cu-W thin films was analyzed. With the help of mid-energy Ar+ ion beam, W atoms can diffuse into the Fe-substrate surface layer; Fe atoms in the substrate surface layer and W atoms interlace with one another; and microcosmic mechanical meshing and diffusing combination on atom-scale among the Fe and W atoms through the film/substrate interface can be formed. The wettability and thermal expansion properties of the W atoms diffusion zone containing plentiful W atoms are close to those of pure W or W-based Cu-W film.

  2. Laser assisted decay spectroscopy at the CRIS beam line at ISOLDE

    International Nuclear Information System (INIS)

    A new collinear resonant ionization spectroscopy (CRIS) beam line has recently been installed at ISOLDE, CERN utilising lasers to combine collinear laser spectroscopy and resonant ionization spectroscopy. The combined technique offers the ability to purify an ion beam that is heavily contaminated with radioactive isobars, including the ground state of an isotope from its isomer, allowing sensitive secondary experiments to be performed. A new programme aiming to use the CRIS technique for the separation of nuclear isomeric states for decay spectroscopy will commence in 2011. A decay spectroscopy station, consisting of a rotating wheel implantation system for alpha decay spectroscopy, and three high purity germanium detectors around the implantation site for gamma-ray detection, has been developed for this purpose. This paper will report the current status of the laser assisted decay spectroscopy set-up for the CRIS beam line.

  3. Observation of strong leakage reduction in crystal assisted collimation of the SPS beam

    Directory of Open Access Journals (Sweden)

    W. Scandale

    2015-09-01

    Full Text Available In ideal two-stage collimation systems, the secondary collimator–absorber should have its length sufficient to exclude practically the exit of halo particles with large impact parameters. In the UA9 experiments on the crystal assisted collimation of the SPS beam a 60 cm long tungsten bar is used as a secondary collimator–absorber which is insufficient for the full absorption of the halo protons. Multi-turn simulation studies of the collimation allowed to select the position for the beam loss monitor downstream the collimation area where the contribution of particles deflected by the crystal in channeling regime but emerging from the secondary collimator–absorber is considerably reduced. This allowed observation of a strong leakage reduction of halo protons from the SPS beam collimation area, thereby approaching the case with an ideal absorber.

  4. Observation of strong leakage reduction in crystal assisted collimation of the SPS beam

    International Nuclear Information System (INIS)

    In ideal two-stage collimation systems, the secondary collimator–absorber should have its length sufficient to exclude practically the exit of halo particles with large impact parameters. In the UA9 experiments on the crystal assisted collimation of the SPS beam a 60 cm long tungsten bar is used as a secondary collimator–absorber which is insufficient for the full absorption of the halo protons. Multi-turn simulation studies of the collimation allowed to select the position for the beam loss monitor downstream the collimation area where the contribution of particles deflected by the crystal in channeling regime but emerging from the secondary collimator–absorber is considerably reduced. This allowed observation of a strong leakage reduction of halo protons from the SPS beam collimation area, thereby approaching the case with an ideal absorber

  5. Laser assisted decay spectroscopy at the CRIS beam line at ISOLDE

    International Nuclear Information System (INIS)

    The new collinear resonant ionization spectroscopy (Cris) experiment at Isolde, Cern uses laser radiation to stepwise excite and ionize an atomic beam for the purpose of ultra-sensitive detection of rare isotopes and hyperfine structure measurements. The technique also offers the ability to purify an ion beam that is contaminated with radioactive isobars, including the ground state of an isotope from its isomer. A new program using the Cris technique to select only nuclear isomeric states for decay spectroscopy commenced last year. The isomeric ion beam is selected using a resonance within its hyperfine structure and subsequently deflected to a decay spectroscopy station. This consists of a rotating wheel implantation system for alpha and beta decay spectroscopy, and up to three high purity germanium detectors for gamma-ray detection. This paper gives an introduction to the Cris technique, the current status of the laser assisted decay spectroscopy set-up and recent results from the experiment in November 2011.

  6. Molecular Ion Beam Transportation for Low Energy Ion Implantation

    International Nuclear Information System (INIS)

    A joint research and development of steady state intense boron ion sources for 100's of electron-volt ion implanters has been in progress for the past five years. Current density limitation associated with extracting and transporting low energy ion beams result in lower beam currents that in turn adversely affects the process throughput. The transport channel with electrostatic lenses for decaborane (B10H14) and carborane (C2B10H12) ion beams transportation was developed and investigated. The significant increase of ion beam intensity at the beam transport channel output is demonstrated. The transport channel simulation, construction and experimental results of ion beam transportation are presented.

  7. Ion-beam-assisted deposition and ion beam synthesis of wear resistant coatings on technical surfaces

    International Nuclear Information System (INIS)

    An ion implanter with a non-mass-separated ion beam, already used for experiments as well as industrial applications, was equipped with an electron-gun evaporator to allow for simultaneous or sequential implantation and coating. Using this equipment, ion-beam-assited deposition (IBAD) of different layers, and in particular the formation of layers of TiN on steel with very good adhesion, was possible. To produce TiN, titanium was evaporated and nitrogen was implanted. The maximum growth rate of the TiN films was 1 nm s-1. Examinations showed superior wear properties in comparison with ion-plated layers and an unusual high Knoop microhardness. Under certain experimental conditions, the stoichiometric ratio was found to be 1:1 even if the ion density was varied slightly, making the IBAD process easily controllable. The layers did not have the yellow color typical of ion-plated TiN layers but were neutral gray. Nevertheless, electron diffraction investigations confirmed the typical crystalline structure of TiN. Analytical investigations were performed and compared with those of ion-plated TiN. Details of the equipment, including operation conditions, as well as experimental results of film properties will be reported. (orig.)

  8. Creating Ruddlesden-Popper phases by hybrid molecular beam epitaxy

    Science.gov (United States)

    Haislmaier, Ryan C.; Stone, Greg; Alem, Nasim; Engel-Herbert, Roman

    2016-07-01

    The synthesis of a 50 unit cell thick n = 4 Srn+1TinO3n+1 (Sr5Ti4O13) Ruddlesden-Popper (RP) phase film is demonstrated by sequentially depositing SrO and TiO2 layers in an alternating fashion using hybrid molecular beam epitaxy (MBE), where Ti was supplied using titanium tetraisopropoxide (TTIP). A detailed calibration procedure is outlined for determining the shuttering times to deposit SrO and TiO2 layers with precise monolayer doses using in-situ reflection high energy electron diffraction (RHEED) as feedback. Using optimized Sr and TTIP shuttering times, a fully automated growth of the n = 4 RP phase was carried out over a period of >4.5 h. Very stable RHEED intensity oscillations were observed over the entire growth period. The structural characterization by X-ray diffraction and high resolution transmission electron microscopy revealed that a constant periodicity of four SrTiO3 perovskite unit cell blocks separating the double SrO rocksalt layer was maintained throughout the entire film thickness with a very little amount of planar faults oriented perpendicular to the growth front direction. These results illustrate that hybrid MBE is capable of layer-by-layer growth with atomic level precision and excellent flux stability.

  9. On the Growth of Complex Oxides by Molecular Beam Epitaxy

    Science.gov (United States)

    Fong, Dillon

    Functional materials based on complex oxides in thin film form offer new and exciting strategies for meeting many of our outstanding energy challenges through systematic control of layer sequencing, strain, etc. However, the synthesis of such oxide films can be a major challenge even when utilizing reactive molecular-beam epitaxy (MBE), a powerful deposition technique that allows the construction of materials atomic plane by atomic plane. To understand the fundamental physics of oxide growth by reactive MBE, we present in situ surface x-ray diffraction results on the growth of SrTiO3 and SrO-SrTiO3 thin films on (001)-oriented SrTiO3 substrates. For homoepitaxy, we compare sequential deposition (alternating Sr and Ti monolayer doses) with that of co-deposition of Sr and Ti, both in a background of oxygen pressure, and observe drastically different growth pathways due to the presence of a TiO2 double layer. For heteroepitaxial growth of Ruddlesden-Popper SrO-SrTiO3 films, we find that layers rearrange dynamically, resulting in layer sequences distinct from the shutter sequence. In general, the starting surface structure and composition, in combination with local thermodynamic considerations, strongly influence our ability to atomically construct new complex oxides.

  10. Emission control of InGaN nanocolumns grown by molecular-beam epitaxy on Si(111) substrates

    International Nuclear Information System (INIS)

    This work studies the effect of the growth temperature on the morphology and emission characteristics of self-assembled InGaN nanocolumns grown by plasma assisted molecular beam epitaxy. Morphology changes are assessed by scanning electron microscopy, while emission is measured by photoluminescence. Within the growth temperature range of 750 to 650 deg. C, an increase in In incorporation for decreasing temperature is observed. This effect allows tailoring the InGaN nanocolumns emission line shape by using temperature gradients during growth. Depending on the gradient rate, span, and sign, broad emission line shapes are obtained, covering the yellow to green range, even yielding white emission.

  11. Perspective: Rapid synthesis of complex oxides by combinatorial molecular beam epitaxy

    Science.gov (United States)

    Bollinger, A. T.; Wu, J.; Božović, I.

    2016-05-01

    The molecular beam epitaxy (MBE) technique is well known for producing atomically smooth thin films as well as impeccable interfaces in multilayers of many different materials. In particular, molecular beam epitaxy is well suited to the growth of complex oxides, materials that hold promise for many applications. Rapid synthesis and high throughput characterization techniques are needed to tap into that potential most efficiently. We discuss our approach to doing that, leaving behind the traditional one-growth-one-compound scheme and instead implementing combinatorial oxide molecular beam epitaxy in a custom built system.

  12. Metallic impurities in gallium nitride grown by molecular beam epitaxy

    Energy Technology Data Exchange (ETDEWEB)

    McHugo, S.A.; Krueger, J.; Kisielowski, C. [Lawrence Berkeley National Lab., CA (United States)] [and others

    1997-04-01

    Transition metals are often encountered in trace amounts in semiconductors. They have been extensively studied in most elemental and compound systems, since they form deep donor and/or acceptor levels which usually degrade the electronic and optical material properties. Only very little is known about transition metals in recent III-V semiconducting materials, such as GaN, AlN and InN. These few studies have been done exclusively on Metal-Organic Chemical Vapor Deposition (MOCVD) or Hybrid Vapor Phase Epitaxy HVPE-grown GaN. Preliminary x-ray fluorescence studies at the Advanced Light Source, beamline 10.3.1, Lawrence Berkeley National Laboratory have revealed that GaN materials grown by Molecular Beam Epitaxy (MBE) have Fe, Ni and Cr as the dominant transition metal contaminants. This finding is commensurate with the extremely high concentrations of hydrogen, carbon and oxygen (up to 10{sup 20} cm{sup {minus}3}) measured by Secondary Ion Mass Spectroscopy (SIMS). Preliminary work using the mapping capabilities of the x-ray fluorescence microprobe revealed the metal impurities were inhomogeneously distributed over the film. Future work of this collaboration will be to find a correlation between the existence of transition metals in MBE films, as revealed by x-ray fluorescence, and Photoluminescence (PL) spectra taken in the infrared region. Also, the authors will make use of the 1 {mu}m spatial resolution of x-ray microprobe to locate the contaminants in relation to structural defects in the GaN films. Because of the large strain caused by the lattice mismatch between the GaN films and the substrates, the films grow in a columnar order with high densities of grain boundaries and dislocations. These structural defects offer preferential sites for metal precipitation or agglomeration which could degrade the optical properties of this material more so than if the impurities were left dissolved in the GaN.

  13. Internal energy dependence of molecular condensation coefficients determined from molecular beam surface scattering experiments

    International Nuclear Information System (INIS)

    An experiment was performed which confirms the existence of an internal mode dependence of molecular sticking probabilities for collisions of molecules with a cold surface. The scattering of a velocity selected effusive beam of CCl4 from a 90 K CC14 ice surface has been studied at five translational velocities and for two different internal temperatures. At a surface temperature of 90 K (approx. 99% sticking probability) a four fold increase in reflected intensity was observed for the internally excited (560 K) CC14 relative to the room temperature (298 K) CC14 at a translational velocity of 2.5 X 104 cm/sec. For a surface temperature of 90 K all angular distributions were found to peak 150 superspecularly independent of incident velocity. 9 references

  14. Internal Energy Dependence of Molecular Condensation Coefficients Determined from Molecular Beam Surface Scattering Experiments

    Science.gov (United States)

    Sibener, S. J.; Lee, Y. T.

    1978-05-01

    An experiment was performed which confirms the existence of an internal mode dependence of molecular sticking probabilities for collisions of molecules with a cold surface. The scattering of a velocity selected effusive beam of CCl{sub 4} from a 90 K CC1{sub 4} ice surface has been studied at five translational velocities and for two different internal temperatures. At a surface temperature of 90 K (approx. 99% sticking probability) a four fold increase in reflected intensity was observed for the internally excited (560 K) CC1{sub 4} relative to the room temperature (298 K) CC1{sub 4} at a translational velocity of 2.5 X 10{sup 4} cm/sec. For a surface temperature of 90 K all angular distributions were found to peak 15{sup 0} superspecularly independent of incident velocity.

  15. Formation of slow molecules in chemical reactions in crossed molecular beams

    Science.gov (United States)

    Tscherbul, T. V.; Barinovs, Ğ.; Kłos, J.; Krems, R. V.

    2008-08-01

    We demonstrate that chemical reactions in collisions of molecular beams can generally produce low-velocity molecules in the laboratory-fixed frame. Our analysis shows that collisions of beams may simultaneously yield slow reactant molecules and slow products. The reaction products are formed in selected rovibrational states and scattered in a specific direction, which can be controlled by tuning the kinetic energies of the incident beams and the angle between the beams. Our calculations indicate that chemical reactions of polar alkali-metal dimers are barrierless and we suggest that chemical reactions involving alkali-metal dimers may be particularly suitable for producing slow molecules in crossed beams.

  16. Electron beam assisted synthesis of silver nanoparticle in chitosan stabilizer: Preparation, stability and inhibition of building fungi studies

    International Nuclear Information System (INIS)

    Silver nanoparticles (AgNPs) in chitosan (CS) stabilizer were successfully synthesized using electron beam irradiation. The effects of irradiation dose, molecular weight (MW) of CS stabilizer, concentration of AgNO3 precursor and addition of tert-butanol on AgNPs production were studied. The stability of the AgNPs under different temperatures and storage times were also investigated. The AgNPs formation in CS was observed using UV–vis, FT-IR and XRD. The characteristic surface plasmon resonance (SPR) of the obtained AgNPs was around 418 nm. The CS stabilizer and its MW, AgNO3 precursor and irradiation doses are important parameters for the synthesis of AgNPs. The optimum addition of 20% v/v tert-butanol could assist the formation of AgNPs. The AgNPs in CS stabilizer were stable over a period of one year when the samples were kept at 5 °C. The AgNPs observed from TEM images were spherical with an average particle size in the range of 5–20 nm depending on the irradiation doses. The AgNPs in CS solution effectively inhibited the growth of several fungi, i.e., Curvularia lunata, Trichoderma sp., Penicillium sp. and Aspergillus niger, which commonly found on the building surface. - Highlights: • Electron beam efficiently assists the synthesis of AgNPs. • AgNPs are spherical with the size of 5–20 nm. • AgNPs formation can be controlled by dose, chitosan, Ag+ content and t-BuOH • AgNPs in chitosan are stable at 5 °C over a year. • AgNPs in chitosan inhibit the growth of building fungi

  17. Thermal stability of AlN films prepared by ion beam assisted deposition

    International Nuclear Information System (INIS)

    Highlights: • AlN films were deposited by dual ion beam sputtering. • Optical constants were measured by spectroscopic ellipsometry. • Diffuse reflection was measured by UV–vis spectroscopy. • Oxidized process of the AlN films was studied. - Abstract: The thermal stability of AlN films deposited by ion beam assisted deposition was performed at 600 °C for 192 h under air ambient. The composition, morphology and optical properties were studied by X-ray photoelectron spectrometer, transmission electron microscopy, scanning electron microscopy, spectroscopic ellipsometry and UV–vis spectroscopy. The results show that the deposited film is polycrystalline, smooth, dense and homogenous. The oxidation of grain boundary takes place due to the element diffusion in the polycrystalline material. Oxidation produces amorphous oxide layers on the surface of film. As annealing time increases, surface roughness and diffuse reflection increase. Annealing has little influence on refractive index and extinction coefficient

  18. Thermal stability of AlN films prepared by ion beam assisted deposition

    Energy Technology Data Exchange (ETDEWEB)

    Meng, Jian-ping [Department of Energy Material and Technology, General Research Institute for Nonferrous Metals, Beijing 100088 (China); Liu, Xiao-peng, E-mail: xpgliu@yahoo.com.cn [Department of Energy Material and Technology, General Research Institute for Nonferrous Metals, Beijing 100088 (China); Fu, Zhi-qiang, E-mail: fuzq@cugb.edu.cn [School of Engineering and Technology, China University of Geosciences (Beijing), Beijing 100083 (China); Wang, Xiao-jing; Hao, Lei [Department of Energy Material and Technology, General Research Institute for Nonferrous Metals, Beijing 100088 (China)

    2015-08-30

    Highlights: • AlN films were deposited by dual ion beam sputtering. • Optical constants were measured by spectroscopic ellipsometry. • Diffuse reflection was measured by UV–vis spectroscopy. • Oxidized process of the AlN films was studied. - Abstract: The thermal stability of AlN films deposited by ion beam assisted deposition was performed at 600 °C for 192 h under air ambient. The composition, morphology and optical properties were studied by X-ray photoelectron spectrometer, transmission electron microscopy, scanning electron microscopy, spectroscopic ellipsometry and UV–vis spectroscopy. The results show that the deposited film is polycrystalline, smooth, dense and homogenous. The oxidation of grain boundary takes place due to the element diffusion in the polycrystalline material. Oxidation produces amorphous oxide layers on the surface of film. As annealing time increases, surface roughness and diffuse reflection increase. Annealing has little influence on refractive index and extinction coefficient.

  19. Measurement of the density profile of pure and seeded molecular beams by femtosecond ion imaging.

    Science.gov (United States)

    Meng, Congsen; Janssen, Maurice H M

    2015-02-01

    Here, we report on femtosecond ion imaging experiments to measure the density profile of a pulsed supersonic molecular beam. Ion images are measured for both a molecular beam and bulk gas under identical experimental conditions via femtosecond multiphoton ionization of Xe atoms. We report the density profile of the molecular beam, and the measured absolute density is compared with theoretical calculations of the centre line beam density. Subsequently, we discuss reasons accounting for the differences between measurements and calculations and propose that strong skimmer interference is the most probable cause for the differences. Furthermore, we report on experiments measuring the centre line density of seeded supersonic beams. The femtosecond ion images show that seeding the heavy Xe atom at low relative seed fractions (1%-10%) in a light carrier gas like Ne results in strong relative enhancements of up to two orders of magnitude. PMID:25725826

  20. Ion and electron beam assisted fabrication of nanostructures integrated in microfluidic chips

    International Nuclear Information System (INIS)

    In present work we have designed and fabricated microfluidic chips (MFC) with integrated nets of nanochannels and whisker nanostructures in microchannels for investigation of biological samples in their native environment. We have designed a number of MFC topologies: (a) hydrodynamic traps with nanoscale channels which link microchannels; (b) a structure with regular vertical nanorod (nanowhisker) array, which could be used as a sensitive element. These topologies were created by means of ion and electron beam assisted techniques. These MFCs allow to investigate biological objects by means of high resolution microscopy. Fabricated MFCs were investigated with emulator of biological objects in different buffer solutions.

  1. Microanalyses of the hydroxyl—poly—calcium sodium phosphate coatings produced by ion beam assisted deposition

    Institute of Scientific and Technical Information of China (English)

    LIUZhong-Yang; WANGChang-Xing; 等

    2002-01-01

    Thin calcium phosphate catings on titanium alloy substrates were prepared by Ar+ ion beam assisted deposition(IBAD) from hydroxyl-poly-calcium sodium phosphate(HPPA) target.The coatings were analyzed by XRD,FTIR,XPS,These analyses revealed that the as-deposited films were amorphous or no apparent crystallinity.No distinct absorption band of the hydroxyl group was observed in FTIR spectra of the coatings but new absorption bands were presented for CO3-2,The calcium to phosphorous ratio of these catings in different IBAD conditions varied from 0.46 to 3.36.

  2. Irradiation-Assisted Stress-Corrosion Cracking of Nitinol During eBeam Sterilization

    Science.gov (United States)

    Smith, Stuart A.; Gause, Brock; Plumley, David; Drexel, Masao J.

    2012-12-01

    Medical device fractures during gamma and electron beam (eBeam) sterilization have been reported. Two common factors in these device fractures were a constraining force and the presence of fluorinated ethylene propylene (FEP). This study investigated the effects of eBeam sterilization on constrained light-oxide nitinol wires in FEP. The goal was to recreate these fractures and determine their root cause. Superelastic nitinol wires were placed inside FEP tubes and constrained with nominal outer fiber strains of 10, 15, and 20%. These samples were then subjected to a range of eBeam sterilization doses up to 400 kGy and compared with unconstrained wires also subjected to sterilization. Fractures were observed at doses of >100 kGy. Analysis of the fracture surfaces indicated that the samples failed due to irradiation-assisted stress-corrosion cracking (IASCC). This same effect was also observed to occur with PTFE at 400 kGy. These results suggest that nitinol is susceptible to IASCC when in the presence of a constraining stress, fluorinated polymers, and irradiation.

  3. Copper thin films by ion beam assisted deposition: Strong texture, superior thermal stability and enhanced hardness

    International Nuclear Information System (INIS)

    Nanocrystalline metals generally exhibit exceptionally high strength. However, their susceptibility to grain growth restricts their applications in high temperature environments. The current study presents that nanocrystalline Cu thin films produced by ion beam assisted deposition (IBAD) are able to sustain their as-deposited microstructure and high hardness upon annealing at high temperatures. IBAD-Cu films exhibit a strong (1 1 1) fiber texture, which is caused by the ion beam induced effects of substrate cleaning, preferential damage and preferential sputtering. The microstructure of the IBAD-Cu films is stable at temperatures up to 800 °C (80% of the melting point of Cu). The hardness of the as-deposited IBAD-Cu films can reach a maximum value of 3.85 GPa. Even after annealing, their hardness is still much higher than that of the normally deposited (without ion beam) films as well as their bulk nanocrystalline counterparts before heat treatment. The excellent thermal stability of microstructure is attributed to the formation of nanometer-sized voids and their pinning effect on grain boundary migration. The kinetics of void formation, the contribution of twin boundaries and ion beam induced defects to the hardness are analyzed and discussed. The findings in this study demonstrate that IBAD is an effective method for the stabilization of microstructure and mechanical properties of nanocrystalline metal thin films

  4. An orientation competition in yttria-stabilized zirconia thin films fabricated by ion beam assisted sputtering deposition

    International Nuclear Information System (INIS)

    A previously found orientation competition in ion beam sputtered yttria-stabilized zirconia thin films was studied in detail. The effects of sputtering energy and deposition angle were analyzed in ion sputtered films without assisting ions bombardment. It is found that for normally deposited films, (001) and (011) orientations are favored at low and high sputtering energy respectively. For inclined substrate deposited films, as deposition angle increases, (001), (011) and (111) orientations are advantaged in turn. The results can be attributed to the in-plane energy exchange of deposition atom and adatoms. In ion beam assisting deposited YSZ films of low assisting ions energy and current, a (001) oriented biaxial texture is gradually induced as ion energy increased. In the case of ion beam assisted inclined deposition of 45°, (001) orientation is enhanced and two preferential in-plane orientations are found coexist.

  5. Manipulation and analysis of atomic and molecular beams using transmission gratings and Fresnel zone plates

    Energy Technology Data Exchange (ETDEWEB)

    Grisenti, R.E.

    2000-06-01

    In this thesis experimental results on the diffraction of rare gas atoms (He, Ne, Ar, Kr) and molecular (D{sub 2}) beams by a 100 nm period transmission grating and on the focusing of a helium atom beam through a Fresnel zone plate have been reported. (orig.)

  6. Crossed molecular beam studies of atmospheric chemical reaction dynamics

    Energy Technology Data Exchange (ETDEWEB)

    Zhang, Jingsong

    1993-04-01

    The dynamics of several elementary chemical reactions that are important in atmospheric chemistry are investigated. The reactive scattering of ground state chlorine or bromine atoms with ozone molecules and ground state chlorine atoms with nitrogen dioxide molecules is studied using a crossed molecular beams apparatus with a rotatable mass spectrometer detector. The Cl + O{sub 3} {yields} ClO + O{sub 2} reaction has been studied at four collision energies ranging from 6 kcal/mole to 32 kcal/mole. The derived product center-of-mass angular and translational energy distributions show that the reaction has a direct reaction mechanism and that there is a strong repulsion on the exit channel. The ClO product is sideways and forward scattered with respect to the Cl atom, and the translational energy release is large. The Cl atom is most likely to attack the terminal oxygen atom of the ozone molecule. The Br + O{sub 3} {yields} ClO + O{sub 2} reaction has been studied at five collision energies ranging from 5 kcal/mole to 26 kcal/mole. The derived product center-of-mass angular and translational energy distributions are quite similar to those in the Cl + O{sub 3} reaction. The Br + O{sub 3} reaction has a direct reaction mechanism similar to that of the Cl + O{sub 3} reaction. The electronic structure of the ozone molecule seems to play the central role in determining the reaction mechanism in atomic radical reactions with the ozone molecule. The Cl + NO{sub 2} {yields} ClO + NO reaction has been studied at three collision energies ranging from 10.6 kcal/mole to 22.4 kcal/mole. The center-of-mass angular distribution has some forward-backward symmetry, and the product translational energy release is quite large. The reaction proceeds through a short-lived complex whose lifetime is less than one rotational period. The experimental results seem to show that the Cl atom mainly attacks the oxygen atom instead of the nitrogen atom of the NO{sub 2} molecule.

  7. Recent advances in biological effect and molecular mechanism of arabidopsis thaliana irradiated by ion beams

    International Nuclear Information System (INIS)

    Newly research progresses were summarized in effect of ion beams on seed surface, biological effect, growth, development, gravitropism and so on. Furthermore, mutation molecular mechanism of Arabidopsis thaliana was discussed, for example, alteration of DNA bases, DNA damage, chromosomal recombination, characteristics of mutant transmissibility, etc. Meanwhile, the achievements of transfer- ring extraneous gene to Arabidopsis thaliana by ion beams were reviewed in the paper. At last, the future prospective are also discussed here in mutation molecular mechanism and the potential application of biological effect of heavy ion beams. (authors)

  8. Shaping of intensive secondary pulsed molecular beam and production of accelerated molecules and radicals in it

    CERN Document Server

    Makarov, G N

    2001-01-01

    The method is described for shaping the intensive secondary pulsed molecular beam, wherein the molecules kinetic energy may be controlled through the powerful IR laser radiation by means of the molecules oscillatory excitation in the source itself. The thickening jump (the shock wave), which is formed by interaction of the intensive pulsed supersonic molecular beam (or flux) with a solid surface, is used as the secondary beam source. The intensive (>= 10 sup 2 sup 0 molecules/stere. s) beams of the SF sub 6 and CF sub 3 I molecules with the kinetic energy correspondingly equal to approximately 1.5 eV and 1.2 eV without gas-carrier and molecular SF sub 6 beams with kinetic energy approx = 2.5 eV are obtained. The spectral and energy characteristics of the SF sub 6 molecules acceleration in the secondary beam are studied. The possibility of obtaining the accelerated radicals in the secondary molecular beam is indicated

  9. Characterization of carbon-doped InSb diode grown by molecular beam epitaxy

    International Nuclear Information System (INIS)

    Carbon-doped p-type InSb layers grown by solid source molecular beam epitaxy are characterized using a p+-n diode structure. Based on the combination of current-voltage, secondary ion mass spectroscopy and x-ray diffraction measurements, carbon is proven to be an effective p-type dopant for InSb with hole concentration reaching the range of 1019 cm-3. It is also proven that the use of the Hall effect to determine the hole concentration in the p-type InSb layer may be unreliable in cases where the leakage current in the p+-n junction is high. A thermal trap-assisted tunnelling model with two trap levels successfully explains the origin of leakage current mechanisms in the carbon-doped InSb samples. Good agreement between measured and calculated dc characteristics of the diodes at reverse bias up to -3 V from 30 to 120 K supports the validity of the current transport model

  10. Dynamics of infrared multiphonon dissociation of SF6 by molecular beam method

    International Nuclear Information System (INIS)

    A crossed molecular beam apparatus has been adapted to study the dynamics of excitation and dissociation of polyatomic molecules in intense IR laser fields. Initial experiments have involved the study of the dissociation of SF6 by CO2 laser radiation at 10.6 μm. A molecular beam of SF6 was formed by supersonic expansion using three stages of differential pumping. A grating tuned pulsed CO2 TEA laser was used as the excitation source. The laser beam was focused by a 25 cm focal length ZnSe lens, and crossed the molecular beam near its focal point. The fragments produced by multiphonon dissociation of SF6 within the small interaction region were detected as a function of recoil angle and velocity. (Auth.)

  11. Using Molecular-Assisted Alpha Taxonomy to Better Understand Red Algal Biodiversity in Bermuda

    OpenAIRE

    Elisabeth N. Cianciola; Thea R. Popolizio; Craig W. Schneider; Lane, Christopher E.

    2010-01-01

    Molecular-assisted alpha taxonomy has recently become an effective practice in reassessing biodiversity and floristics for a variety of different organisms. This paper presents a series of examples that have been drawn from biodiversity work being carried out on the marine red algae of Bermuda. Molecular sequencing of DNA from Bermuda samples has already begun to greatly alter the makeup of the flora as it was known just decades ago, and will help set a new database for future comparison as c...

  12. Transport properties of modulation-doped structures grown by molecular beam epitaxy after focused ion beam implantation

    International Nuclear Information System (INIS)

    Modulation-doped structures are grown by molecular beam epitaxy after focused ion beam writing. The growth and implantation chambers are connected in a high vacuum to minimize the effect of growth interruption. The electron channel is drastically depleted by the buried Be+ implanted region, but only slightly depleted by the buried Au+ and Au2+ implanted regions. This is because Be+ implantation forms a p-type material, while Au+ or Au2+ implantation leaves damage only in the n-type material. Be+ implantation is therefore used to fabricate 0.1 μm-wide wires with electron mobility of 2.1x105 cm2/Vs. (author)

  13. Superconductivity in oxygen doped iron telluride by molecular beam epitaxy

    Science.gov (United States)

    Zheng, Mao

    Iron base superconductor have gained much attention in the research community. They offer great potentials to improve our understanding of the subject of superconductivity by having another family of high temperature superconductors to compare and contrast to the cuprates. Practically, the iron based superconductors seems to be even better candidates for applications in power generation and power transmission. Iron telluride is regarded as the parent compound of the "11" family, the family of iron chalcogenide that has the simplest structure. Iron telluride itself is not a superconductor, by can become one when doped with oxygen. In this investigation, we developed the growth recipe of thin film iron telluride by Molecular Beam Epitaxy (MBE). We found the growth to be self-regulated, similar to that of GaAs. The initial layers of growth seem to experience a spontaneous crystallization, as the film quickly go from the initial polycrystalline phase to highly crystalline in just a few unit cells. We studied oxygen doping to the iron telluride thin films and the resultant superconductivity. We characterized the sample with AFM, XRD, transport, and STEM-EELS, and we found that interfacial strain is not an essential ingredient of superconductivity in this particular case. We investigated the doping conditions for two candidate oxygen doping modes: substitution and interstitial. We found that substitution occurs when the film grown in oxygen, while interstitial oxygen is primarily incorporated during annealing after growth. The substitutional oxygen are concentrated in small local regions where substitution is around 100%, but does not contribute to superconductivity. We estimated substitutional oxygen to be about 5%, and is the proximate cause of superconductivity. Hall experiment on our sample showed a shift of dominant carrier type from holes to electrons around 35 K, but the transition was set in motion as early as the structural phase transition around 70 K. We

  14. The role of molecular markers and marker assisted selection in breeding for organic agriculture

    DEFF Research Database (Denmark)

    Lammerts van Bueren, E.T.; Backes, G.; de Vriend, H.;

    2010-01-01

    Plant geneticists consider molecular marker assisted selection a useful additional tool in plant breeding programs to make selection more efficient. Standards for organic agriculture do not exclude the use of molecular markers as such, however for the organic sector the appropriateness of molecular...... markers is not self-evident and is often debated. Organic and low-input farming conditions require breeding for robust and flexible varieties, which may be hampered by too much focus on the molecular level. Pros and contras for application of molecular markers in breeding for organic agriculture was the...... topic of a recent European plant breeding workshop. The participants evaluated strengths, weaknesses, opportunities, and threats of the use of molecular markers and we formalized their inputs into breeder’s perspectives and perspectives seen from the organic sector’s standpoint. Clear strengths were...

  15. Production of radioactive molecular beams for CERN-ISOLDE

    CERN Document Server

    AUTHOR|(SzGeCERN)703149; Kröll, Thorsten

    SOLDE, the Isotope Separation On-Line facility, at CERN is a leading facility for the production of beams of exotic radioactive isotopes. Currently over 1000 different isotopes with half lives down to milliseconds can be extracted with beam intensities of up to 10^11 ions per second. However, due to the reactive target environment not all isotopes are extractable in sufficient amounts. In this work the extraction of short lived carbon and boron isotopes is investigated. Therefore a variety of experimental and computanional techniques have been used.

  16. Production of radioactive molecular beams for CERN-ISOLDE

    Energy Technology Data Exchange (ETDEWEB)

    Seiffert, Christoph

    2015-06-15

    ISOLDE, the Isotope Separation On-Line facility, at CERN is a leading facility for the production of beams of exotic radioactive isotopes. Currently over 1000 different isotopes with half lives down to milliseconds can be extracted with beam intensities of up to 10{sup 11} ions per second. However, due to the reactive target environment not all isotopes are extractable in sufficient amounts. In this work the extraction of short lived carbon and boron isotopes is investigated. Therefore a variety of experimental and computational techniques have been used.

  17. Production of radioactive molecular beams for CERN-ISOLDE

    International Nuclear Information System (INIS)

    ISOLDE, the Isotope Separation On-Line facility, at CERN is a leading facility for the production of beams of exotic radioactive isotopes. Currently over 1000 different isotopes with half lives down to milliseconds can be extracted with beam intensities of up to 1011 ions per second. However, due to the reactive target environment not all isotopes are extractable in sufficient amounts. In this work the extraction of short lived carbon and boron isotopes is investigated. Therefore a variety of experimental and computational techniques have been used.

  18. Infrared and ion beam analysis of SI/sub x/N/sub 1-x/ alloys grown by ion beam assisted deposition

    International Nuclear Information System (INIS)

    Thin films of amorphous Si/sub x/N/sub 1-x/ alloys were produced by nitrogen ion beam assisted deposition of electron beam evaporated silicon. Infrared reflection spectra were measured in the range 600 to 10000 cm/sup -1/. Fringes were observed due to interference between light multiply-reflected from the front surface and film-substrate (single crystal silicon) interface. Similar measurements were performed on films crystallized by post-deposition furnace anneals. Analyses of the reflection spectra were used to obtain refractive index profiles. Profiles were correlated with nitrogen content as measured by Rutherford Backscattering Spectometry (RBS) and Auger Electron Spectroscopy (AES). Film adhesion, density, and purity were found to be improved for depositions assisted by nitrogen ion beams (1000 to 25,000 eV) relative to unassisted evaporation, and the index of refraction decreases monotonically with increasing nitrogen content

  19. Methods for assisting recovery of damaged brain and spinal cord using arrays of X-Ray microplanar beams

    Science.gov (United States)

    Dilmanian, F. Avraham; McDonald, III, John W.

    2007-12-04

    A method of assisting recovery of an injury site of brain or spinal cord injury includes providing a therapeutic dose of X-ray radiation to the injury site through an array of parallel microplanar beams. The dose at least temporarily removes regeneration inhibitors from the irradiated regions. Substantially unirradiated cells surviving between the microplanar beams migrate to the in-beam irradiated portion and assist in recovery. The dose may be administered in dose fractions over several sessions, separated in time, using angle-variable intersecting microbeam arrays (AVIMA). Additional doses may be administered by varying the orientation of the microplanar beams. The method may be enhanced by injecting stem cells into the injury site.

  20. Use of molecular beams to support microspheres during plasma coating

    International Nuclear Information System (INIS)

    Spherical targets can be levitated on beams of Ar or other gas atoms. This is an especially useful technique for supporting microspheres during plasma coating and processing. Measurements of gas flow and pressure indicate that the levitation device operates in the regime of Knudsen's flow. This device is currently being used in the development of future generation laser targets

  1. Mechanical behaviour of metallic thin films on polymeric substrates and the effect of ion beam assistance on crack propagation

    International Nuclear Information System (INIS)

    The mechanisms of crack propagation in metallic films on polymeric substrates have been studied through in situ atomic force microscopy observations of thin films under tensile stresses and finite element stress calculations. Two series of films - ones deposited with ion beam assistance, the others without - have been investigated. The observations and stress calculations show that ion beam assistance can change drastically the propagation of cracks in coated materials: by improving the adhesion film/substrate, it slows down the delamination process, but in the same time enhances the cracks growth in the thickness of the material

  2. Growth of GaNAs/GaAs multiple quantum well by molecular beam epitaxy using modulated N radical beam source

    International Nuclear Information System (INIS)

    GaNAs/GaAs multiple quantum well (MQW) structures have been grown on GaAs(001) substrates by molecular beam epitaxy (MBE) using modulated N radical beam source under optimized conditions, wherein the amount of N2 gas flow, RF-power and shutter sequence are systematically controlled. Clear and flat GaNAs/GaAs interfaces were observed in the cross-sectional transmission electron microscopy (TEM) measurements. Fine MQW structures originating from the precise control of the modulated N radical beam have been demonstrated as clear satellite peaks from the X-ray diffraction (XRD) measurements and sharp photoluminescence (PL) peaks. The step-like behaviors in the absorption spectra which reflect the density of state in two-dimensional systems, were clearly observed for all MQW samples. (authors)

  3. Continuous electropolishing of Hastelloy substrates for ion-beam assisted deposition of MgO

    Energy Technology Data Exchange (ETDEWEB)

    Kreiskott, Sascha; Arendt, Paul N; Bronisz, Lawrence E; Foltyn, Steve R; Matias, Vladimir [Superconductivity Technology Center, Los Alamos National Laboratory, Los Alamos, NM 87545 (United States)

    2003-05-01

    We demonstrate the applicability of continuous electropolishing for the preparation of metal tapes for ion-beam assisted deposition of MgO for the fabrication of in-plane textured template layers. These templates are used for the fabrication of second generation high temperature superconducting wires utilizing YBa{sub 2}Cu{sub 3}O{sub 7-{delta}} coatings on metallic substrates. Surface roughness values below 1 nm and local slopes of less than 1 deg. could be achieved with the electropolishing process. Mean surface roughness values are lower with the use of electropolishing and slopes of surface roughness inclines are significantly reduced compared to the best results of mechanical polishing (3.5 nm and 5 deg., respectively). The cost-effective process of electropolishing shows great promise for the fabrication of second generation high temperature superconducting wire.

  4. Continuous electropolishing of Hastelloy substrates for ion-beam assisted deposition of MgO

    International Nuclear Information System (INIS)

    We demonstrate the applicability of continuous electropolishing for the preparation of metal tapes for ion-beam assisted deposition of MgO for the fabrication of in-plane textured template layers. These templates are used for the fabrication of second generation high temperature superconducting wires utilizing YBa2Cu3O7-δ coatings on metallic substrates. Surface roughness values below 1 nm and local slopes of less than 1 deg. could be achieved with the electropolishing process. Mean surface roughness values are lower with the use of electropolishing and slopes of surface roughness inclines are significantly reduced compared to the best results of mechanical polishing (3.5 nm and 5 deg., respectively). The cost-effective process of electropolishing shows great promise for the fabrication of second generation high temperature superconducting wire

  5. Texture development of CeO2 thin films deposited by ion beam assisted deposition

    International Nuclear Information System (INIS)

    CeO2 thin films were prepared on amorphous quartz glass substrates by the ion beam assisted deposition (IBAD) technique at room temperature. In order to control both the in-plane and out-of-plane texture of the films, a special geometrical arrangement of the ion sources, the target, and the substrate was used. A new concept, considering the role of reflected particles from the target, which we call self-IBAD, was introduced. The structural properties of the CeO2 films were investigated by x-ray diffraction. Good biaxially textured films were obtained with out-of-plane mosaic spreads of 3.0 deg. and in-plane alignment of 10.8 deg. C

  6. Physical properties of ITO thin films prepared by ion-assisted electron beam evaporation

    Science.gov (United States)

    Qiu, Yang; Jin, Yangli; Zhao, Hua; Xu, Bo; Wang, Jiajia

    2014-12-01

    Tin doped indium oxide (ITO) thin films were prepared on IR glass substrates at different oxygen flow rate by ion-assisted electron beam evaporation method. Properties such as microstructure, morphology, sheet resistance and optical transmittance were investigated by X-ray diffractometer, SEM, four-point probe and UV-VIS-IR spectrophotometer, respectively. Lattice constant, inner stress level and energy band gap (Eg) of ITO thin films as-deposited were calculated and discussed. The mechanical properties of ITO thin films were studied by scratching method. The measurements were performed by scratch tester and the results were recorded as acoustic emission spectra and scratch track images taken by SEM. Relationship between inner stress level and mechanical performance was investigated in detail.

  7. Antibacterial and corrosion resistance of TiN/Ag multilayers by ion beam assisted deposition

    International Nuclear Information System (INIS)

    TiN/Ag multilayers were deposited on medical stainless steel 317L by ion beam assisted deposition (IBAD). Standard agar dilution method was used to test antibacterial ratio using E.coil and S.aureus. Electro-chemical method was used to test corrosion resistance of the film in Hank's simulated human plasma. The structure and depth profile of the elements were investigated by XPS, XRD and ALES. The results show that a strong antibacterial ratio (>99%) can be obtained when the modulation period of TiN/Ag multilayers is 8 nm (5 nm TiN and 3 nm Ag). Its corrosion resistance is better than medical stainless steel 317L, approaching monolayer TiN. (authors)

  8. Mechanical properties of silicon oxynitride thin films prepared by low energy ion beam assisted deposition

    International Nuclear Information System (INIS)

    Silicon oxynitride (SiOxNy) films (0.1-0.7 μm) were produced on Si (1 0 0), glass and 316L stainless steel substrates by ion beam assisted deposition (IBAD) using Si evaporation and the concurrent bombardment with a mixture of 200 eV N2 and Ar, or O2 and Ar ions. Adhesion was evaluated by pull-off tests. Film hardness was measured by a nanoindentation system with AFM. The measurement of internal stress in the films was carried out by the Stoney method. The film structure was examined by GXRD. XPS was employed to measure the composition of films and to analyze the chemical bonds. The dependence of mechanical properties on the film thickness and the processing temperature during deposition was studied. Finally, the relations between the mechanical properties of the films and the correlation with corrosion-protection ability of films are discussed and summarized

  9. Mechanical properties of silicon oxynitride thin films prepared by low energy ion beam assisted deposition

    Science.gov (United States)

    Shima, Yukari; Hasuyama, Hiroki; Kondoh, Toshiharu; Imaoka, Yasuo; Watari, Takanori; Baba, Koumei; Hatada, Ruriko

    1999-01-01

    Silicon oxynitride (SiO xN y) films (0.1-0.7 μm) were produced on Si (1 0 0), glass and 316L stainless steel substrates by ion beam assisted deposition (IBAD) using Si evaporation and the concurrent bombardment with a mixture of 200 eV N 2 and Ar, or O 2 and Ar ions. Adhesion was evaluated by pull-off tests. Film hardness was measured by a nanoindentation system with AFM. The measurement of internal stress in the films was carried out by the Stoney method. The film structure was examined by GXRD. XPS was employed to measure the composition of films and to analyze the chemical bonds. The dependence of mechanical properties on the film thickness and the processing temperature during deposition was studied. Finally, the relations between the mechanical properties of the films and the correlation with corrosion-protection ability of films are discussed and summarized.

  10. Optimization of Energy Scope for Titanium Nitride Films Grown by Ion Beam-Assisted Deposition

    Institute of Scientific and Technical Information of China (English)

    LI Wei; MA Zhong-Quan; WANG Ye; WANG De-Ming

    2006-01-01

    The deposited energy during film growth with ion bombardment, correlated to the atomic displacement on the surface monolayer and the underlying bulk, has been calculated by a simplified ion-solid interaction model under binary collision approximation. The separated damage energies caused by Ar ion, different for the surface and the bulk, have been determined under the standard collision cross section and a well-defined surface and bulk atom displacement threshold energy of titanium nitride (TiN). The optimum energy scope shows that the incident energy of Ar+ around 110eV for TiN (111) and 80eV for TiN (200) effectively enhances the mobility of adatom on surface but excludes the damage in underlying bulk. The theoretical prediction and the experimental result are in good agreement in low energy ion beam-assisted deposition.

  11. A field-assisted moderator for low-energy positron beams

    Science.gov (United States)

    Beling, C. D.; Simpson, R. I.; Charlton, M.; Jacobsen, F. M.; Griffith, T. C.; Moriarty, P.; Fung, S.

    1987-01-01

    A new positron field-assisted (FA) moderator based on the drift of positrons across a cooled silicon crystal is proposed. Using estimates for both the β + implantation profile and attainable drift velocities, the efficiency of drift to a slow e+ emitting surface is calculated using a diffusion equation which incorporates terms describing positron drift and annihilation. It is conjectured that efficiencies of up to 10% can be achieved. The use of epitaxially grown metallic suicide contacts to facilitate the application of the electric field is described and the consequences of using such contacts are fully discussed. Applications of the FA transmission mode moderator described here to produce timed brightness enhanced beams are briefly discussed.

  12. Ion beam assisted deposition of Ti–Si–C thin films

    Directory of Open Access Journals (Sweden)

    A. Twardowska

    2009-11-01

    Full Text Available Purpose: Deposition of hard thin multilayer coatings is a common practice in improving the performance of tools for many different applications. From this aspect Ti3SiC2, due to its lamellar structure and unique combination of properties is a potential interlayer material candidate for thermo-mechanical application.Design/methodology/approach: Multiphase Ti–Si–C thin films were deposited by the ion beam assisted deposition (IBAD technique from a single Ti3SiC2 compound target on an AISI 316L steel substrate. To optimize the deposition process, Monte Carlo simulations were performed; the range of the deposition parameters was determined and then experimentally verified. Scanning and transmission electron microscopies were used to examine the microstructure and quality of the deposited films. Mechanical properties were determined by nanoindentation tests.Findings: The deposited film was flat, smooth and dense with small crystalline particles. The hardness HIT of coated substrates was in the range 2.7 to 5.3 GPa. The average calculated value reduced elastic modulus EIT for coated substrates was 160 GPa. The hardness and reduced elastic modulus for uncoated substrates were HIT = 4.4 GPa and EIT = 250 GPa, respectively.Practical implications: PVD techniques enable low substrate temperature deposition, preferred due to the thermal limitations of the metallic substrates commonly used in industrial applications. The aim of this work is low temperature deposition of Ti-Si-C film, from a single Ti3SiC2 compound target, on 316L steel substrate, using the IBAD technique, known for excellent film connection to the substrate.Originality/value: Ion beam assisted deposition parameters were calculated and experimentally verified.

  13. Electron beam assisted synthesis of silver nanoparticle in chitosan stabilizer: Preparation, stability and inhibition of building fungi studies

    Science.gov (United States)

    Jannoo, Kanokwan; Teerapatsakul, Churapa; Punyanut, Adisak; Pasanphan, Wanvimol

    2015-07-01

    Silver nanoparticles (AgNPs) in chitosan (CS) stabilizer were successfully synthesized using electron beam irradiation. The effects of irradiation dose, molecular weight (MW) of CS stabilizer, concentration of AgNO3 precursor and addition of tert-butanol on AgNPs production were studied. The stability of the AgNPs under different temperatures and storage times were also investigated. The AgNPs formation in CS was observed using UV-vis, FT-IR and XRD. The characteristic surface plasmon resonance (SPR) of the obtained AgNPs was around 418 nm. The CS stabilizer and its MW, AgNO3 precursor and irradiation doses are important parameters for the synthesis of AgNPs. The optimum addition of 20% v/v tert-butanol could assist the formation of AgNPs. The AgNPs in CS stabilizer were stable over a period of one year when the samples were kept at 5 °C. The AgNPs observed from TEM images were spherical with an average particle size in the range of 5-20 nm depending on the irradiation doses. The AgNPs in CS solution effectively inhibited the growth of several fungi, i.e., Curvularia lunata, Trichoderma sp., Penicillium sp. and Aspergillus niger, which commonly found on the building surface.

  14. Tilting of carbon encapsulated metallic nanocolumns in carbon-nickel nanocomposite films by ion beam assisted deposition

    Energy Technology Data Exchange (ETDEWEB)

    Krause, Matthias [Helmholtz-Zentrum Dresden-Rossendorf, PF-510119, 01314 Dresden (Germany); Technische Universitaet Dresden, D-01062 Dresden (Germany); Muecklich, Arndt; Zschornak, Matthias; Wintz, Sebastian; Gemming, Sibylle; Abrasonis, Gintautas [Helmholtz-Zentrum Dresden-Rossendorf, PF-510119, 01314 Dresden (Germany); Oates, Thomas W. H. [Leibniz-Institut fuer Analytische Wissenschaft, ISAS e.V., Albert-Einstein-Str. 9, 12489 Berlin (Germany); Luis Endrino, Jose [Surfaces and Coatings Department, Instituto de Ciencia de Materiales de Madrid, c/Sor Juana Ines de la Cruz 3, Cantoblanco, 28049 Madrid (Spain); Baehtz, Carsten; Shalimov, Artem [Helmholtz-Zentrum Dresden-Rossendorf, PF-510119, 01314 Dresden (Germany); Rossendorf Beamline, European Synchrotron Radiation Facility, F-38043 Grenoble (France)

    2012-07-30

    The influence of assisting low-energy ({approx}50-100 eV) ion irradiation effects on the morphology of C:Ni ({approx}15 at. %) nanocomposite films during ion beam assisted deposition (IBAD) is investigated. It is shown that IBAD promotes the columnar growth of carbon encapsulated metallic nanoparticles. The momentum transfer from assisting ions results in tilting of the columns in relation to the growing film surface. Complex secondary structures are obtained, in which a significant part of the columns grows under local epitaxy via the junction of sequentially deposited thin film fractions. The influence of such anisotropic film morphology on the optical properties is highlighted.

  15. Absolute density-profile tomography of molecular beams using multiphoton ionization

    International Nuclear Information System (INIS)

    We describe an approach for the absolute density measurement of rotationally symmetric molecular beams via multiphoton ionization. This simple single-projection tomographic technique requires only knowledge of the spatial intensity profile and ionization characteristics of the focused laser beam that probes the pulsed molecular jet. Multiphoton ionization (MPI) of a xenon beam allowed tomographic reconstruction of a two-dimensional density profile with a peak density of (4.2±0.4)x1018 m-3, which was compared with the theoretical predictions of the sudden freeze model. An analytic solution to the Abel transform is derived for Gaussian projected density profiles which greatly simplifies the reconstruction of the absolute radial density. MPI is sufficiently general that this technique can be readily applied to atomic beams with a broad range of chemistries.

  16. Biaxial Texture Evolution in MgO Films Fabricated Using Ion Beam-Assisted Deposition

    Science.gov (United States)

    Xue, Yan; Zhang, Ya-Hui; Zhao, Rui-Peng; Zhang, Fei; Lu, Yu-Ming; Cai, Chuan-Bing; Xiong, Jie; Tao, Bo-Wan

    2016-04-01

    The growth of multifunctional thin films on flexible substrates is important technologically, because flexible electronics require such a platform. In this study, we examined the evolution of biaxial texture in MgO films prepared using ion beam-assisted deposition (IBAD) on a Hastelloy substrate. Texture and microstructure developments were characterized through in situ reflection high-energy electron diffraction monitoring, x-ray diffraction, and atomic force microscopy, which demonstrated that biaxial texture was developed during the nucleation stage (~2.2 nm). The best biaxial texture was obtained with a thickness of approximately 12 nm. As MgO continued to grow, the influence of surface energy was reduced, and film growth was driven by the attempt to minimize volume free-energy density. Thus the MgO grains were subsequently rotated at the (002) direction toward the ion beam. In addition, an approach was developed for accelerating in-plane texture evolution by pre-depositing an amorphous MgO layer before IBAD.

  17. Biaxial Texture Evolution in MgO Films Fabricated Using Ion Beam-Assisted Deposition

    Science.gov (United States)

    Xue, Yan; Zhang, Ya-Hui; Zhao, Rui-Peng; Zhang, Fei; Lu, Yu-Ming; Cai, Chuan-Bing; Xiong, Jie; Tao, Bo-Wan

    2016-07-01

    The growth of multifunctional thin films on flexible substrates is important technologically, because flexible electronics require such a platform. In this study, we examined the evolution of biaxial texture in MgO films prepared using ion beam-assisted deposition (IBAD) on a Hastelloy substrate. Texture and microstructure developments were characterized through in situ reflection high-energy electron diffraction monitoring, x-ray diffraction, and atomic force microscopy, which demonstrated that biaxial texture was developed during the nucleation stage (~2.2 nm). The best biaxial texture was obtained with a thickness of approximately 12 nm. As MgO continued to grow, the influence of surface energy was reduced, and film growth was driven by the attempt to minimize volume free-energy density. Thus the MgO grains were subsequently rotated at the (002) direction toward the ion beam. In addition, an approach was developed for accelerating in-plane texture evolution by pre-depositing an amorphous MgO layer before IBAD.

  18. Molecular beams research in the chemistry department of the Complutense university: progress over a decade

    International Nuclear Information System (INIS)

    This paper reports on the progress made over nearly a decade (1980-1990) by the Molecular Beam Group in the Complutense University of Madrid. After the author's stay in the United States as Prof. R.B Bernstein's post doc everything here had to be done from scratch. Designing the apparatus; importing all the equipment; overcoming huge bureaucracy: buying screws, welding, plumbing, etc. Essentially the following experimental techniques were set up: crossed-beam techniques to measure total and differential reaction cross-section for ground and/or excited species. Reaction Energy threshold and excitation functions for elementary chemical reactions. Molecular Beam chemiluminescence either in crossed-beam and beam-gas conditions. Laser-induced fluorescence and laser-induced charge transfer processes in beams and crossed-beam conditions, respectively. The chemiionization technique in crossed-beams was also set up. Our group pioneered: (a) the measurement of high resolution threshold energies and total reaction cross-section (also in absolute units) for many reactions; (b) the production of highly intense pulsed beams of electronically excited atoms; (c) the measurement under high resolution of the crossed-beam dynamics of excited species; (d) the measurement of the role of alkyl groups in the dynamics (stereodynamics) of chemical reactions; (e) the measurement of the spin-orbit effects in laser-induced charge transfer processes; (f) the developing of a novel technique, using the time-of-flight method under crossed-beam conditions, that is able to measure existing quantum effects in the total reaction cross-section; (g) the measurement of dissociation energies of radicals with less than 1% of experimental error. (Author) 76 refs. 32 fig

  19. Intense Electron Beams from GaAs Photocathodes as a Tool for Molecular and Atomic Physics

    OpenAIRE

    Krantz, C.

    2009-01-01

    We present cesium-coated GaAs photocathodes as reliable sources of intense, quasi-monoenergetic electron beams in atomic and molecular physics experiments. In long-time operation of the Electron Target of the ion storage ring TSR in Heidelberg, cold electron beams could be realised at steadily improving intensity and reliability. Minimisation of processes degrading the quantum efficiency allowed to increase the extractable current to more than 1mA at stable cathode lifetimes of 24 h or more. ...

  20. Three-dimensional imaging of the ultracold plasma formed in a supersonic molecular beam

    International Nuclear Information System (INIS)

    Double-resonant excitation of nitric oxide in a seeded supersonic molecular beam forms a state-selected Rydberg gas that evolves to form an ultracold plasma. This plasma travels with the propagation of the molecular beam in z over a variable distance as great as 600 mm to strike an imaging detector, which records the charge distribution in the dimensions, x and y. The ω1 + ω2 laser crossed molecular beam excitation geometry convolutes the axial Gaussian distribution of NO in the molecular beam with the Gaussian intensity distribution of the perpendicularly aligned laser beam to create an ellipsoidal volume of Rydberg gas. Detected images describe the evolution of this initial density as a function of selected Rydberg gas initial principal quantum number, n0, ω1 laser pulse energy (linearly related to Rydberg gas density, ρ0) and flight time. Low-density Rydberg gases of lower principal quantum number produce uniformly expanding, ellipsoidal charge-density distributions. Increase either of n0 or ρ0 breaks the ellipsoidal symmetry of plasma expansion. The volume bifurcates to form repelling plasma volumes. The velocity of separation depends on n0 and ρ0 in a way that scales uniformly with ρe, the density of electrons formed in the core of the Rydberg gas by prompt Penning ionization. Conditions under which this electron gas drives expansion in the long axis dimension of the ellipsoid favours the formation of counter-propagating shock waves

  1. Effects of high source flow and high pumping speed on gas source molecular beam epitaxy / chemical beam epitaxy

    Science.gov (United States)

    McCollum, M. J.; Jackson, S. L.; Szafranek, I.; Stillman, G. E.

    1990-10-01

    We report the growth of GaAs by molecular beam epitaxy (MBE), gas source molecular beam epitaxy (GSMBE), and chemical beam epitaxy (CBE) in an epitaxial III-V reactor which features high pumping speed. The system is comprised of a modified Perkin-Elmer 430P molecular beam epitaxy system and a custom gas source panel from Emcore. The growth chamber is pumped with a 7000 1/s (He) diffusion pump (Varian VHS-10 with Monsanto Santovac 5 oil). The gas source panel includes pressure based flow controllers (MKS 1150) allowing triethylaluminum (TEA), triethylgallium (TEG), and trimethylindium (TMI) to be supplied without the use of hydrogen. All source lines, including arsine and phosphine, are maintained below atmospheric pressure. The high pumping speed allows total system flow rates as high as 100 SCCM and V/III ratios as high as 100. The purity of GaAs grown by MBE in this system increases with pumping speed. GaAs layers grown by GSMBE with arsine flows of 10 and 20 SCCM have electron concentrations of 1 × 10 15 cm -3 (μ 77=48,000 cm 2/V·) and 2 × 10 14 cm -3 (μ 77=78,000 cm 2/V·s) respectively. El ectron concentration varies with hydride injector temperature such that the minimum in electron concentration occurs for less than complete cracking. The effect of V/III ratio and the use of a metal eutectic bubbler on residual carrier concentration in GaAs grown by CBE is presented. Intentional Si and Be doping of CBE grown GaAs is demonstrated at a high growth rate of 5.4 μm/h.

  2. Peculiarities of fullerenes condensation from molecular beam in vacuum

    Directory of Open Access Journals (Sweden)

    Neluba P. L.

    2011-12-01

    Full Text Available There was investigated С60 fullerenes condensation in vacuum on unheated Si, GaAs, isinglass stone substrates. There were used atomic-force microscopy, Raman scattering and measurement of mechanical stresses in films. It is established that the С60 molecule can decay on the substrates with the formation of other carbon structures in the condensate without supplementary physical effects on the sublimated beam in «evaporator — substrate» space. The possibility was found to increase the grain size and reduce the mechanical stresses in the condensate.

  3. TEM investigations of Ni-Cu thin film coatings, obtained by multilayer technique, coevaporation, and ion beam assisted deposition

    International Nuclear Information System (INIS)

    The microstructural aspects of three different thin film coatings of NiCu at the equiatomic concentration are studied by TEM investigations. Those coatings are: multilayered samples, coevaporated samples, and ion beam assisted codeposited samples. In all cases, under certain experimental conditions of irradiation and annealing, an unexpected L10 ordered phase precipitates in the solid solution matrix of NiCu. (author)

  4. Molecular and morphological characterization of hydrochar produced by microwave-assisted hydrothermal carbonization of cellulose

    Directory of Open Access Journals (Sweden)

    Marcela Guiotoku

    2012-05-01

    Full Text Available The objective of this work was to characterize the morphology and molecular composition of the hydrochar produced by microwave-assisted hydrothermal carbonization of cellulose. The produced hydrochar consists mainly of aggregate microspheres with about 2.0 µm in diameter, with aliphatic and aromatic structures and the presence of carbonyl functional groups. The aromatic groups are formed mainly by benzofuran-like structures, being chemically different from common cellulose char. Microwave-assisted hydrothermal carbonization yields a functionalized carbon-rich material similar to that produced by the conventional hydrothermal process.

  5. Molecular Beam Studies of Hot Atom Chemical Reactions: Reactive Scattering of Energetic Deuterium Atoms

    Science.gov (United States)

    Continetti, R. E.; Balko, B. A.; Lee, Y. T.

    1989-02-01

    A brief review of the application of the crossed molecular beams technique to the study of hot atom chemical reactions in the last twenty years is given. Specific emphasis is placed on recent advances in the use of photolytically produced energetic deuterium atoms in the study of the fundamental elementary reactions D + H{sub 2} -> DH + H and the substitution reaction D + C{sub 2}H{sub 2} -> C{sub 2}HD + H. Recent advances in uv laser and pulsed molecular beam techniques have made the detailed study of hydrogen atom reactions under single collision conditions possible.

  6. High temperature and high resolution uv photoelectron spectroscopy using supersonic molecular beams

    International Nuclear Information System (INIS)

    A high temperature molecular beam source with electron bombardment heating has been built for high resolution photoelectron spectroscopic studies of high temperature species and clusters. This source has the advantages of: producing an intense, continuous, seeded molecular beam, eliminating the interference of the heating mechanism from the photoelectron measurement. Coupling the source with our hemispherical electron energy analyzer, we can obtain very high resolution HeIα (584 angstrom) photoelectron spectra of high temperature species. Vibrationally-resolved photoelectron spectra of PbSe, As2, As4, and ZnCl2 are shown to demonstrate the performance of the new source. 25 refs., 8 figs., 1 tab

  7. Design of a molecular beam surface scattering apparatus for velocity and angular distribution measurements

    Energy Technology Data Exchange (ETDEWEB)

    Ceyer, S.T.; Siekhaus, W.J.; Somorjai, G.A.

    1981-09-01

    A molecular beam surface scattering apparatus designed for the study of corrosion and catalytic surface reactions is described. The apparatus incorporates two molecular or atomic beams aimed at a surface characterized by low energy electron diffraction (LEED) and Auger electron spectroscopy (AES), a rotatable, differentially pumped quadrupole mass spectrometer, and a versatile manipulator. Angular distributions and energy distributions as a function of angle and independent of the surface residence time can be measured. Typical data for the oxidation of deuterium to D/sub 2/O on a Pt(111) crystal surface are presented.

  8. DESIGN OF A MOLECULAR BEAM SURFACE SCATTERING APPARATUS FOR VELOCITY AND ANGULAR DISTRIBUTION MEASUREMENTS

    Energy Technology Data Exchange (ETDEWEB)

    Ceyer, S. T.; Siekhaus, W. J.; Somorjai, G. A.

    1980-11-01

    A molecular beam surface scattering apparatus designed for the study of corrosion and catalyticsurfacereactions is described. The apparatus incorporates two molecular or atomic beams aimed at a surface characterized by low energy electron diffraction (LEED) and Auger electron spectroscopy (AES), a rotatable, differentially pumped quadrupole mass spectrometer, and a versatile manipulator. Angular distributions and energy distributions as a funcion of angle and independent of the surface residence time can be measured. Typical data for the oxidation of deuterium to D{sub 2}O on a Pt(lll) crystal surface are presented.

  9. Photoluminescence Characterization of Boron-doped Si Layers Grown by Molecular Beam Epitaxy

    Institute of Scientific and Technical Information of China (English)

    LI Cheng; LAI Hong-kai; CHEN Song-yan

    2005-01-01

    Photoluminescence spectra were used to characterize the boron-doped Si layers grown by molecular beam epitaxy using HBO2 as the doping source. The influence of boron doping concentration on the dislocation-related photoluminescence spectra of molecular beam epitaxy Si layers annealed at 900 ℃ was studied with different doping concentrations and growth temperature. The broad photoluminescence band(from 0.75 eV to 0.90 eV) including D1 and D2 bands was associated with high boron doping concentration in the samples, while D3 and D4 bands might be related to oxygen precipitates.

  10. An ultra-low energy (30-200 eV) ion-atomic beam source for ion-beam-assisted deposition in ultrahigh vacuum.

    Science.gov (United States)

    Mach, Jindrich; Samoril, Tomás; Voborný, Stanislav; Kolíbal, Miroslav; Zlámal, Jakub; Spousta, Jirí; Dittrichová, Libuse; Sikola, Tomás

    2011-08-01

    The paper describes the design and construction of an ion-atomic beam source with an optimized generation of ions for ion-beam-assisted deposition under ultrahigh vacuum (UHV) conditions. The source combines an effusion cell and an electron impact ion source and produces ion beams with ultra-low energies in the range from 30 eV to 200 eV. Decreasing ion beam energy to hyperthermal values (≈10(1) eV) without loosing optimum ionization conditions has been mainly achieved by the incorporation of an ionization chamber with a grid transparent enough for electron and ion beams. In this way the energy and current density of nitrogen ion beams in the order of 10(1) eV and 10(1) nA/cm(2), respectively, have been achieved. The source is capable of growing ultrathin layers or nanostructures at ultra-low energies with a growth rate of several MLs/h. The ion-atomic beam source will be preferentially applied for the synthesis of GaN under UHV conditions. PMID:21895238

  11. High quality InAlN single layers lattice-matched to GaN grown by molecular beam epitaxy

    International Nuclear Information System (INIS)

    We report on properties of high quality ∼60 nm thick InAlN layers nearly in-plane lattice-matched to GaN, grown on c-plane GaN-on-sapphire templates by plasma-assisted molecular beam epitaxy. Excellent crystalline quality and low surface roughness are confirmed by X-ray diffraction, transmission electron microscopy, and atomic force microscopy. High annular dark field observations reveal a periodic in-plane indium content variation (8 nm period), whereas optical measurements evidence certain residual absorption below the band-gap. The indium fluctuation is estimated to be ± 1.2% around the nominal 17% indium content via plasmon energy oscillations assessed by electron energy loss spectroscopy with sub-nanometric spatial resolution.

  12. Contactless electroreflectance studies of surface potential barrier for N- and Ga-face epilayers grown by molecular beam epitaxy

    Energy Technology Data Exchange (ETDEWEB)

    Kudrawiec, R.; Janicki, L.; Gladysiewicz, M.; Misiewicz, J. [Institute of Physics, Wroclaw University of Technology, Wybrzeże Wyspiańskiego 27, 50-370 Wrocław (Poland); Cywinski, G.; Boćkowski, M.; Muzioł, G. [Institute of High Pressure Physics, Polish Academy of Sciences, Sokołowska 29/37, 01-142 Warsaw (Poland); Chèze, C. [TopGaN Sp. z o.o., Sokołowska 29/37, 01-142 Warsaw (Poland); Sawicka, M.; Skierbiszewski, C. [Institute of High Pressure Physics, Polish Academy of Sciences, Sokołowska 29/37, 01-142 Warsaw (Poland); TopGaN Sp. z o.o., Sokołowska 29/37, 01-142 Warsaw (Poland)

    2013-07-29

    Two series of N- and Ga-face GaN Van Hoof structures were grown by plasma-assisted molecular beam epitaxy to study the surface potential barrier by contactless electroreflectance (CER). A clear CER resonance followed by strong Franz-Keldysh oscillation of period varying with the thickness of undoped GaN layer was observed for these structures. This period was much shorter for N-polar structures that means smaller surface potential barrier in these structures than in Ga-polar structures. From the analysis of built-in electric field it was determined that the Fermi-level is located 0.27 ± 0.05 and 0.60 ± 0.05 eV below the conduction band for N- and Ga-face GaN surface, respectively.

  13. High-index Cu2O (113) film on faceted MgO (110) by molecular beam epitaxy

    Science.gov (United States)

    Huo, Wenxing; Shi, Jin'an; Mei, Zengxia; Liu, Lishu; Li, Junqiang; Gu, Lin; Du, Xiaolong; Xue, Qikun

    2015-06-01

    We report the growth of single-oriented Cu2O (113) film on faceted MgO (110) substrate by radio-frequency plasma assisted molecular beam epitaxy. A MgO {100} faceted homoepitaxial layer was introduced beforehand as a template for epitaxy of Cu2O film. The epitaxial relationship is determined to be Cu2O (113)//MgO (110) with a tilt angle of 4.76° and Cu2O [ 1 1 bar 0]//MgO [ 1 1 bar 0] by the combined study of in-situ reflection high-energy electron diffraction and ex-situ X-ray diffraction and transmission electron microscopy. The film demonstrates a good p-type conductivity and excellent optical properties, indicating that this unique approach is potentially applicable for high-index film preparation and device applications.

  14. Size dependent bandgap of molecular beam epitaxy grown InN quantum dots measured by scanning tunneling spectroscopy

    International Nuclear Information System (INIS)

    InN quantum dots (QDs) were grown on Si (111) by epitaxial Stranski-Krastanow growth mode using plasma-assisted molecular beam epitaxy. Single-crystalline wurtzite structure of InN QDs was verified by the x-ray diffraction and transmission electron microscopy. Scanning tunneling microscopy has been used to probe the structural aspects of QDs. A surface bandgap of InN QDs was estimated from scanning tunneling spectroscopy (STS) I-V curves and found that it is strongly dependent on the size of QDs. The observed size-dependent STS bandgap energy shifts with diameter and height were theoretical explained based on an effective mass approximation with finite-depth square-well potential model.

  15. Molecular beam epitaxy of thick InGaN(0001) films: Effects of substrate temperature on structural and electronic properties

    Science.gov (United States)

    Papadomanolaki, E.; Bazioti, C.; Kazazis, S. A.; Androulidaki, M.; Dimitrakopulos, G. P.; Iliopoulos, E.

    2016-03-01

    Indium gallium nitride films with compositions close to the middle of the miscibility gap and thickness approximately up to 0.5 μm were epitaxially grown on GaN(0001) by plasma-assisted molecular beam epitaxy at growth temperatures spanning a range of 400-590 °C. Epilayers were characterized by X-ray diffraction, transmission electron microscopy and Hall effect measurements. The effect of substrate temperature during growth, on the structural and electronic properties of the films, was studied. Single phase films, with record high electron mobilities were obtained at lower temperatures. Increased growth temperatures led to epilayers with higher defect densities and phase separation. Strain relaxation through sequestration layering and introduction of multiple basal stacking faults was observed at such temperatures.

  16. (111)-oriented Zn3N2 growth on a-plane sapphire substrates by molecular beam epitaxy

    International Nuclear Information System (INIS)

    (111)-oriented Zn3N2 thin films were grown on a-plane (112-bar0) sapphire substrates by plasma-assisted molecular beam epitaxy. Zn3N2/sapphire exhibits orientational relationships of out-of-plane parallel [112-bar0] and in-plane almost parallel [0001] and parallel [0001]. These specific orientations result from similar surface configurations of N atoms in Zn3N2 and Al atoms in sapphire at the interface. Under the optimum growth conditions, the film showed a full width at half maximum of 185 arcsec for an X-ray (222) diffraction rocking curve and a root-mean-square roughness of 8.5 A in an atomic force microscope image. These results suggest that a-plane sapphire is a suitable heteroepitaxial substrate for high-quality Zn3N2 thin films. (author)

  17. The influence of Laval nozzle throat size on supersonic molecular beam injection

    Institute of Scientific and Technical Information of China (English)

    Xinkui He; Xianfu Feng; Mingmin Zhong; Fujun Gou; Shuiquan Deng; Yong Zhao

    2014-01-01

    In this study, finite element analysis (FEA) has been used to investigate the effects of different Laval nozzle throat sizes on supersonic molecular beam. The simulations indicate the Mach numbers of the molecular stream peak at different positions along the center axis of the beam, which correspond to local minimums of the molecular densities. With the increase of the throat diam-eter, the first peak of the Mach number increases first and then decreases, while that of the molecular number density increases gradually. Moreover, both first peaks shift pro-gressively away from the throat. At the last part, we discuss the possible applications of our FEA approach to solve some crucial problems met in modern transportations.

  18. Low-temperature grown graphene films by using molecular beam epitaxy

    Energy Technology Data Exchange (ETDEWEB)

    Lin, Meng-Yu [Institute of Electronics, National Taiwan University, Taipei, Taiwan (China); Research Center for Applied Sciences, Academia Sinica, Nankang, Taipei, Taiwan (China); Guo, Wei-Ching; Wang, Pro-Yao [Institute of Optoelectronic Sciences, National Taiwan Ocean University, Keelung, Taiwan (China); Wu, Meng-Hsun [College of Photonics, National Chiao-Tung University, Tainan, Taiwan (China); Liu, Te-Huan; Chang, Chien-Cheng [Institute of Applied Mechanics, National Taiwan University, Taipei, Taiwan (China); Pao, Chun-Wei; Lin, Shih-Yen [Research Center for Applied Sciences, Academia Sinica, Nankang, Taipei, Taiwan (China); Lee, Si-Chen [Institute of Electronics, National Taiwan University, Taipei, Taiwan (China)

    2012-11-26

    Complete graphene film is prepared by depositing carbon atoms directly on Cu foils in a molecular beam epitaxy chamber at 300 Degree-Sign C. The Raman spectrum of the film has indicated that high-quality few-layer graphene is obtained. With back-gated transistor architecture, the characteristic current modulation of graphene transistors is observed. Following the similar growth procedure, graphitization is observed at room temperature, which is consistent with the molecular dynamics simulations of graphene growth.

  19. Alternate gradient focusing and deceleration of a molecular beam

    International Nuclear Information System (INIS)

    Neutral dipolar molecules can be decelerated and trapped using time-varying inhomogeneous electric fields. This has been demonstrated only for molecules in low-field seeking states, but can, in principle, be performed on molecules in high-field seeking states as well. Transverse stability is then much more difficult to obtain, however, since molecules in high-field seeking states always experience a force towards the electrodes. Here we demonstrate that an array of dipole lenses in alternate gradient configuration can be used to maintain transverse stability. A pulsed beam of metastable CO in high-field seeking states is accelerated from 275 to 289 m/s as well as decelerated from 275 to 260 m/s

  20. Electron collisions and internal excitation in stored molecular ion beams

    International Nuclear Information System (INIS)

    In storage ring experiments the role, which the initial internal excitation of a molecular ion can play in electron collisions, and the effect of these collisions on the internal excitation are investigated. Dissociative recombination (DR) and inelastic and super-elastic collisions are studied in the system of He+2. The DR rate coefficient at low energies depends strongly on the initial vibrational excitation in this system. Therefore changes in the DR rate coefficient are a very sensitive probe for changes in the vibrational excitation in He+2, which is used to investigate the effects of collisions with electrons and residual gas species. The low-energy DR of HD+ is rich with resonances from the indirect DR process, when certain initial rotational levels in the molecular ion are coupled to levels in neutral Rydberg states lying below the ion state. Using new procedures for high-resolution electron-ion collision spectroscopy developed here, these resonances in the DR cross section can be measured with high energy sensitivity. This allows a detailed comparison with results of a MQDT calculation in an effort to assign some or all of the resonances to certain intermediate Rydberg levels. (orig.)

  1. Electron collisions and internal excitation in stored molecular ion beams

    Energy Technology Data Exchange (ETDEWEB)

    Buhr, H.

    2006-07-26

    In storage ring experiments the role, which the initial internal excitation of a molecular ion can play in electron collisions, and the effect of these collisions on the internal excitation are investigated. Dissociative recombination (DR) and inelastic and super-elastic collisions are studied in the system of He{sup +}{sub 2}. The DR rate coefficient at low energies depends strongly on the initial vibrational excitation in this system. Therefore changes in the DR rate coefficient are a very sensitive probe for changes in the vibrational excitation in He{sup +}{sub 2}, which is used to investigate the effects of collisions with electrons and residual gas species. The low-energy DR of HD{sup +} is rich with resonances from the indirect DR process, when certain initial rotational levels in the molecular ion are coupled to levels in neutral Rydberg states lying below the ion state. Using new procedures for high-resolution electron-ion collision spectroscopy developed here, these resonances in the DR cross section can be measured with high energy sensitivity. This allows a detailed comparison with results of a MQDT calculation in an effort to assign some or all of the resonances to certain intermediate Rydberg levels. (orig.)

  2. Collision dynamics of methyl radicals and highly vibrationally excited molecules using crossed molecular beams

    International Nuclear Information System (INIS)

    The vibrational to translational (V→T) energy transfer in collisions between large highly vibrationally excited polyatomics and rare gases was investigated by time-of-flight techniques. Two different methods, UV excitation followed by intemal conversion and infrared multiphoton excitation (IRMPE), were used to form vibrationally excited molecular beams of hexafluorobenzene and sulfur hexafluoride, respectively. The product translational energy was found to be independent of the vibrational excitation. These results indicate that the probability distribution function for V→T energy transfer is peaked at zero. The collisional relaxation of large polyatomic molecules with rare gases most likely occurs through a rotationally mediated process. Photodissociation of nitrobenzene in a molecular beam was studied at 266 nm. Two primary dissociation channels were identified including simple bond rupture to produce nitrogen dioxide and phenyl radical and isomerization to form nitric oxide and phenoxy radical. The time-of-flight spectra indicate that simple bond rupture and isomerization occurs via two different mechanisms. Secondary dissociation of the phenoxy radicals to carbon monoxide and cyclopentadienyl radicals was observed as well as secondary photodissociation of phenyl radical to give H atom and benzyne. A supersonic methyl radical beam source is developed. The beam source configuration and conditions were optimized for CH3 production from the thermal decomposition of azomethane. Elastic scattering of methyl radical and neon was used to differentiate between the methyl radicals and the residual azomethane in the molecular beam

  3. Molecular beam study of the HeNe-laser pumping transition

    International Nuclear Information System (INIS)

    The red line of the helium--neon laser is pumped by the excitation transfer from a metastable He atom to ground-state Ne atoms, He(2 1S)+Ne→He+Ne(3s). This process is studied in a crossed molecular beam apparatus. (AIP)

  4. Crossed molecular beam study of H and D atom reactions with NO2

    International Nuclear Information System (INIS)

    The experimental details and results of molecular beam studies of the reactions of H and D atoms with NO2 (with an observed isotope effect of the differential cross section) with much improved sensitivity and resolution, in good agreement with earlier results of the authors, are briefly summerized. (HK)

  5. Using Pyrolysis Molecular Beam Mass Spectrometry to Characterize Soil Organic Carbon in Native Prairie Soils

    Science.gov (United States)

    The objective of this study was to characterize soil organic carbon (SOC) with pyrolysis molecular beam mass spectrometry (py-MBMS) and then to determine correlations between the mass spectra and associated soil characterization data. Both soil carbon chemistry and the organic forms in which SOC is...

  6. Molecular-beam epitaxy growth and characterization of 5-{mu}m quantum cascade laser

    Energy Technology Data Exchange (ETDEWEB)

    Mamutin, V V; Ustinov, V M; Ilyinskaya, N D; Baydakova, M V; Ber, B Ya; Kasantsev, D Yu, E-mail: boris.ber@mail.ioffe.ru [Ioffe Physical-Technical Institute of the Russian Academy of Sciences, St. Petersburg, 26 Polytechnicheskaya St, 194021 (Russian Federation)

    2011-04-01

    Molecular-beam epitaxy growth of 5 {mu}m emitting strain-compensated quantum semiconductor laser (QCL) is reported. The QCL structure is characterized by complementary techniques: high-resolution X-ray diffraction and dynamical secondary-ion mass-spectrometry, that reveal the high quality of QCL structure and in-depth distribution of chemical composition, respectively.

  7. Mn2Au: Body-centered-tetragonal bimetallic antiferromagnets grown by molecular beam epitataxy

    Czech Academy of Sciences Publication Activity Database

    Wu, H.C.; Liao, Z.M.; Sofin, R.G.S.; Feng, G.; Ma, X.M.; Shick, Alexander; Mryasov, O. N.; Shvets, I.V.

    2012-01-01

    Roč. 24, č. 47 (2012), s. 6374-6379. ISSN 0935-9648 Institutional research plan: CEZ:AV0Z10100520 Keywords : antiferromagnets * antiferromagnetic spintronics * exchange bias * molecular beam epitaxy Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 14.829, year: 2012

  8. Relationship Between Differential Interference Angle and Parameter of Experiment in Molecular Beam

    Institute of Scientific and Technical Information of China (English)

    LI Yong-Qing; LI Jian; MA Feng-Cai

    2006-01-01

    Collisional quantum interference (CQI) was observed in the intramolecular rotational energy transfer in the experiment of the static cell, and the integral interference angles were measured. To observe more precise information, the experiment in the molecular beam should be taken, from which the relationship between the differential interference angle and the scattering angle can be obtained. In this paper, the theoretical model of CQI is described in an atom-diatom system in the condition of the molecular beam, based on the first-Born approximation of time-dependent perturbation theory, taking into accounts the long-range interaction potential. The method of observing and measuring correctly the differential interference angle is presented. The changing tendency of the differential interference angle with the impact parameter and relative velocity is discussed. The changing tendencies of the differential interference angle with the parameter of experiment in the molecular beam, including the impact parameter and the velocity are discussed. This theoretical model is important to understand or perform the experiment in the molecular beam.

  9. Scanning Tunneling Microscopy Studies of Topological Insulators Grown by Molecular Beam Epitaxy

    Directory of Open Access Journals (Sweden)

    Xue Qikun

    2012-03-01

    Full Text Available We summarize our recent scanning tunneling microscopy (STM study of topological insulator thin films grown by molecular beam epitaxy (MBE, which includes the observation of electron standing waves on topological insulator surface and the Landau quantization of topological surface states. The work has provided valuable information to the understanding of intriguing properties of topological insulators, as predicted by theory.

  10. CH4 dissociation on Ni(100): Comparison of a direct dynamical model to molecular beam experiments

    DEFF Research Database (Denmark)

    Luntz, Alan

    1995-01-01

    This paper makes an extensive comparison of a dynamical model for a mechanism of direct dissociation to the detailed molecular beam experiments of CH4 dissociation on a Ni(100) surface reported in the previous paper. When a PES incorporating an ``exit channel'' barrier is used in the model and st...... Institute of Physics....

  11. Crossed Molecular Beam Studies and Dynamics of Decomposition of Chemically Activated Radicals

    Science.gov (United States)

    Lee, Y. T.

    1973-09-01

    The power of the crossed molecular beams method in the investigation of the dynamics of chemical reactions lies mainly in the direct observation of the consequences of single collisions of well controlled reactant molecules. The primary experimental observations which provide information on reaction dynamics are the measurements of angular and velocity distributions of reaction products.

  12. Molecular beam study of the HeNe-laser pumping transition

    International Nuclear Information System (INIS)

    Electronic energy transfer from metastable helium atoms (21S,23S) to groundstate neon atoms is the main pumping process of the HeNe-laser: He(21S) + Ne → He + Ne(3s); He(23S) + Ne → He + Ne(2s). The authors have studied these energy transfer processes in a crossed molecular beam experiment. (Auth.)

  13. Study of molecular mechanism of cancer cell apoptosis induced by proton beam

    International Nuclear Information System (INIS)

    A gal of this study is (i) to confirm JNK-mediated histone H2AX phosphorylation in apoptotic cancer cell in response to proton irradiation and (ii) to identify novel H2AX interacting proteins. (iii) Furthermore, we will provide the molecular information about improvement of proton beam-mediated radiotherapy

  14. Molecular beam epitaxy growth of InSb1−xBix thin films

    DEFF Research Database (Denmark)

    Song, Yuxin; Wang, Shumin; Saha Roy, Ivy; Shi, Peixiong; Hallen, Anders; Lai, Zonghe

    2013-01-01

    Molecular beam epitaxy growth for InSb1−xBix thin films on (100) GaAs substrates is reported. Successful Bi incorporation for 2% is achieved, and up to 70% of the incorporated Bi atoms are at substitutional sites. The effects of growth parameters on Bi incorporation and surface morphology are...

  15. Construction and calibration of a fast superconducting bolometer for molecular beams detection

    International Nuclear Information System (INIS)

    A tin bolometer evaporated on an anodized aluminum block is described. The noise equivalent power of the bolometer is of 10-13 watt Hzsup(-1/2) and the time constant is 3μ sec. The bolometer is a suitable fast molecular beam detector

  16. Molecular beam studies of oxide reduction by atomic hydrogen

    International Nuclear Information System (INIS)

    The graphite and oxide internals of a CTR are susceptible to chemical corrosion as well as to physical degradation by high-energy particles. Reactions of thermal atomic hydrogen with oxides are being studied. The hydrogen used is at thermal energy (0.22 eV). Typical data are reported for the H/UO2 system. The reaction probability is plotted as a function of solid temperature at fixed beam intensity and moculation frequency. The reaction probability increases from low temperature to a high-temperature plateau at about 13000C. Here the reaction rate is limited solely by the sticking probability of H on the surface; about one in seven of the incident atoms is chemisorbed by the surface and ultimately returns to the gas phase as water vapor. A reaction model comprising sticking, recombination to H2, solution and diffusion of H in the bulk of the UO2, surface reaction of adsorbed H with lattice oxygen atoms to produce the hydroxyl radical, and production of water is constructed. The rate constants for the elementary steps in the mechanism are tabulated. 2 figures, 2 tables

  17. Influence of the Ion-to-Atom Ratio on the Structure of CeO2 Buffer Layer by Ion Beam Assisted E-Beam Evaporation

    Science.gov (United States)

    Kim, Chang Su; Jo, Sung Jin; Kim, Woo Jin; Koo, Won Hoe; Baik, Hong Koo; Lee, Se Jong

    2005-09-01

    Using ion-beam assisted e-beam evaporation with the ion beam directed at 55° to the normal of the film plane, (200) oriented CeO2 films with biaxial texture were deposited on Hastelloy C276 substrates at room temperature. The crystalline quality and in-plane orientation of films was investigated by X-ray diffraction 2θ-scan and Φ-scan, atomic force microscopy (AFM). It was shown that the in-plane and out-of-plane textures of the CeO2 films were controlled by the deposition parameters. The orientation of the films was studied as a function of ion-to-atom ratio and film thickness. The ion-to-atom ratio was varied by independently adjusting the deposition rate and the ion current density. Under optimum condition, (200) textured CeO2 films have been successfully grown on Hastelloy C276.

  18. Reflection mass spectrometry technique for monitoring and controlling composition during molecular beam epitaxy

    Science.gov (United States)

    Brennan, Thomas M.; Hammons, B. Eugene; Tsao, Jeffrey Y.

    1992-01-01

    A method for on-line accurate monitoring and precise control of molecular beam epitaxial growth of Groups III-III-V or Groups III-V-V layers in an advanced semiconductor device incorporates reflection mass spectrometry. The reflection mass spectrometry is responsive to intentional perturbations in molecular fluxes incident on a substrate by accurately measuring the molecular fluxes reflected from the substrate. The reflected flux is extremely sensitive to the state of the growing surface and the measurements obtained enable control of newly forming surfaces that are dynamically changing as a result of growth.

  19. Customized atomic force microscopy probe by focused-ion-beam-assisted tip transfer

    Energy Technology Data Exchange (ETDEWEB)

    Wang, Andrew; Butte, Manish J., E-mail: manish.butte@stanford.edu [Department of Pediatrics, Division of Immunology, Allergy and Rheumatology, Stanford University, Stanford, California 94305 (United States)

    2014-08-04

    We present a technique for transferring separately fabricated tips onto tipless atomic force microscopy (AFM) cantilevers, performed using focused ion beam-assisted nanomanipulation. This method addresses the need in scanning probe microscopy for certain tip geometries that cannot be achieved by conventional lithography. For example, in probing complex layered materials or tall biological cells using AFM, a tall tip with a high-aspect-ratio is required to avoid artifacts caused by collisions of the tip's sides with the material being probed. We show experimentally that tall (18 μm) cantilever tips fabricated by this approach reduce squeeze-film damping, which fits predictions from hydrodynamic theory, and results in an increased quality factor (Q) of the fundamental flexural mode. We demonstrate that a customized tip's well-defined geometry, tall tip height, and aspect ratio enable improved measurement of elastic moduli by allowing access to low-laying portions of tall cells (T lymphocytes). This technique can be generally used to attach tips to any micromechanical device when conventional lithography of tips cannot be accomplished.

  20. Microstructure and mechanical properties of Cr-N coatings by ion-beam-assisted magnetron sputtering

    Energy Technology Data Exchange (ETDEWEB)

    Tian Linhai [Research Institute of Surface Engineering, Taiyuan University of Technology, Taiyuan 030024 (China); Zhu Xiaodong [State Key Laboratory for Mechanical Behaviour of Materials, Xi' an Jiaotong University, Xi' an 710049 (China); Tang, Bin [Research Institute of Surface Engineering, Taiyuan University of Technology, Taiyuan 030024 (China)], E-mail: tangbin@tyut.edu.cn; Pan Junde [Research Institute of Surface Engineering, Taiyuan University of Technology, Taiyuan 030024 (China); He Jiawen [State Key Laboratory for Mechanical Behaviour of Materials, Xi' an Jiaotong University, Xi' an 710049 (China)

    2008-06-15

    Cr-N coatings were deposited using the ion-beam-assisted magnetron sputtering technique. The microstructure and mechanical properties of Cr-N coatings were found to be dependent on the ion bombardment energy. The microstructure of the coatings changes from columnar structure to fine and dense grains when the ion bombardment energy increases from 0 to 800 eV and to equiaxial grains for an ion energy of 1200 eV. The coatings average grain size, which is determined by the Voigt profile function, decreases from 20.3 nm at an ion energy of 0 eV to 8.8 nm at 800 eV and further increases to 21.5 nm at 1200 eV. Both the hardness and fracture toughness of the coatings are improved when the ion energy increases from 0 to 800 eV, which is related to the decrease of grain size. The grain size of the coating grown at an energy of 1200 eV is close to that of 0 eV, but the hardness and fracture toughness at 1200 eV are higher. This suggests that the improvement of hardness and fracture toughness is also related to the increased densification of the coatings caused by ion bombardment.

  1. Beam steering laser assisted deposition system for high-Tc superconducting thin film devices

    International Nuclear Information System (INIS)

    We present the design and construction of a beam steering laser-assisted deposition system (LAD) for high quality epitaxial YBaCuO superconducting thin film production suitable for commercial application. Deposition of single layer or multilayer YBaCuO superconducting thin film on large and complex surfaced substrate is now feasible. Expitaxial and polycrystaline films with onsets at 90 K having 6 K transition widths have been produced. Dome-shaped magnetic shield enclosures, microwave cavity resonant in the TM010 mode, and short dipole antennas have been fabricated. The advantages of the laser ablation deposition method [J. T. Cheung and D. T. Chueng, J. Vac. Sci. Technol. 21, 182 (1982)] are its simplicity and cleanliness. Laser ablation deposition is a viable method to produce high quality thin film of the Tl-based compound [S. H. Liou and K. D. Aylesworth, Appl. Phys. Lett. 54, 760 (1989)] by using a small target in a sealed environment which is important in handling toxic material of a Tl-based compounds

  2. Mechanical properties of silicon oxynitride thin films prepared by low energy ion beam assisted deposition

    Energy Technology Data Exchange (ETDEWEB)

    Shima, Yukari; Hasuyama, Hiroki E-mail: hasuyama@cc.kurume-it.ac.jp; Kondoh, Toshiharu; Imaoka, Yasuo; Watari, Takanori; Baba, Koumei; Hatada, Ruriko

    1999-01-02

    Silicon oxynitride (SiO{sub x}N{sub y}) films (0.1-0.7 {mu}m) were produced on Si (1 0 0), glass and 316L stainless steel substrates by ion beam assisted deposition (IBAD) using Si evaporation and the concurrent bombardment with a mixture of 200 eV N{sub 2} and Ar, or O{sub 2} and Ar ions. Adhesion was evaluated by pull-off tests. Film hardness was measured by a nanoindentation system with AFM. The measurement of internal stress in the films was carried out by the Stoney method. The film structure was examined by GXRD. XPS was employed to measure the composition of films and to analyze the chemical bonds. The dependence of mechanical properties on the film thickness and the processing temperature during deposition was studied. Finally, the relations between the mechanical properties of the films and the correlation with corrosion-protection ability of films are discussed and summarized.

  3. Development of computer assisted learning program using cone beam projection for head radiography

    International Nuclear Information System (INIS)

    We present a computer assisted learning (CAL) program to simulate head radiography. The program provides cone beam projections of a target volume, simulating three-dimensional computed tomography (CT) of a head phantom. The generated image is 512 x 512 x 512 pixels with each pixel 0.6 mm on a side. The imaging geometry, such as X-ray tube orientation and phantom orientation, can be varied. The graphical user interface (GUI) of the CAL program allows the study of the effects of varying the imaging geometry; each simulated projection image is shown quickly in an adjoining window. Simulated images with an assigned geometry were compared with the image obtained using the standard geometry in clinical use. The accuracy of the simulated image was verified through comparison with the image acquired using radiography of the head phantom, subsequently processed with a computed radiography system (CR image). Based on correlation coefficient analysis and visual assessment, it was concluded that the CAL program can satisfactorily simulate the CR image. Therefore, it should be useful for the training of head radiography. (author)

  4. Ion-beam-induced aggregation in polystyrene: The influence of the molecular parameters

    International Nuclear Information System (INIS)

    The formation of an insoluble gel under ion-beam bombardment is governed by ion-beam parameters and target parameters. Here reported is a study of the influence of the target molecular parameters on the sol--gel transition of ion-bombarded polystyrene with particular emphasis for the number-average molecular weight M-bar/sub n/. It is shown that the main parameter is the number of macromolcules of the film so that by adopting a ''corrected'' fluence F/n (ions per macromolecule), the different curves of the various polymers collapse in only one universal curve. The importance of the ''corrected'' fluence is shown also at molecular level and the MWD of the various polymers is similar at equal F/n values. An experimental model is outlined which explains the sol--gel transition on the basis of transition from an isolated-track regime to an overlap regime where the formation of insoluble giant macromolecules occurs

  5. Cluster beam steering onto silicon surfaces studied by molecular dynamics

    International Nuclear Information System (INIS)

    The purpose of this study is to investigate the effects of the impact conditions on cluster deposition in silicon and is motivated by recent results obtained using a variable incidence angle during deposition of metallic clusters and atoms. Therefore deposition of silicon clusters with a kinetic energy in the range from 0.5 to 10 eV/atom directed at normal and grazing incidence onto crystalline silicon has been studied using a molecular dynamics simulation method. The influence of other relevant parameters, such as the interatomic forces and the cluster size and shape, has also been investigated. This study shows that the physics of deposition is almost entirely dictated by the nature of the interatomic forces. When using potentials with the four-fold coordination typical of bulk a clear dependence on the size N is observed and the spreading index η decreases with the increase of N for all incidence conditions. The cluster binding strength is perceptibly increased when using a potential accounting for the coordination typical of clusters. In this case η is reduced of almost one order of magnitude with respect to the values calculated with the bulk potentials and its value is independent of N. Also compact clusters, obtained from a quantum mechanical minimization of the total energy, show an enhanced resilience against fragmentation

  6. A new approach for 3D reconstruction from bright field TEM imaging: Beam precession assisted electron tomography

    International Nuclear Information System (INIS)

    The successful combination of electron beam precession and bright field electron tomography for 3D reconstruction is reported. Beam precession is demonstrated to be a powerful technique to reduce the contrast artifacts due to diffraction and curvature in thin foils. Taking advantage of these benefits, Precession assisted electron tomography has been applied to reconstruct the morphology of Sn precipitates embedded in an Al matrix, from a tilt series acquired in a range from +49o to -61o at intervals of 2o and with a precession angle of 0.6o in bright field mode. The combination of electron tomography and beam precession in conventional TEM mode is proposed as an alternative procedure to obtain 3D reconstructions of nano-objects without a scanning system or a high angle annular dark field detector. -- Highlights: → Electron beam precession reduces spurious diffraction contrast in bright field mode. → Bend contour related contrast depends on precession angle. → Electron beam precession is combined with bright field electron tomography. → Precession assisted BF tomography allowed 3D reconstruction of a Sn precipitate.

  7. Ion beam-assisted deposition of boron nitride from a condensed layer of diborane and ammonia at 78 K

    International Nuclear Information System (INIS)

    This paper examines the ion beam-assisted deposition (IBAD) of thin boron nitride films using cryogenically condensed precursors. Low energy (1100 eV) argon ad (2000 eV) deuterated ammonia beams with currents of 600--850 nA were used to mix and initiate reactions in frozen (90 K) layers of diborane (B2H6 and ammonia (NH3) or only B2H6, respectively. The resulting film is shown to be an amorphous BN coating approximately 30 Angstrom thick

  8. Ion beams application to modification of surface layer of solids with particular regard to IBAD method - ion beam assisted deposition realized in the INP; Zastosowanie wiazek jonowych do modyfikowania warstwy wierzchniej cial stalych, ze szczegolnym uwzglednieniem metody IBAD - Ion Beam Assisted Deposition, realizowanej w IFJ

    Energy Technology Data Exchange (ETDEWEB)

    Drwiega, M.; Lipinska, E.

    1992-12-31

    The different trends in ion engineering such as: dynamic ion mixing, ionized cluster beam deposition and ion beam assisted deposition are described. Some examples of properties of surface coatings are given and their applications are presented. The future of ion engineering is described. 48 refs, 12 figs, 4 tabs.

  9. Physics with fast molecular-ion beams. Proceedings of workshop held at Argonne National Laboratory, August 20-21, 1979

    International Nuclear Information System (INIS)

    The Workshop on Physics with Fast Molecular-Ion Beams was held in the Physics Division, Argonne National Laboratory on August 20 and 21, 1979. The meeting brought together representatives from several groups studying the interactions of fast (MeV) molecular-ion beams with matter. By keeping the Workshop program sharply focussed on current work related to the interactions of fast molecular ions, it was made possible for the participants to engage in vigorous and detailed discussions concerning such specialized topics as molecular-ion dissociation and transmission, wake effects, ionic charge states, cluster stopping powers, beam-foil spectroscopy, electron-emissions studies with molecular-ion beams, and molecular-ion structure determinations

  10. Effect of molecular weight distribution on e-beam exposure properties of polystyrene

    International Nuclear Information System (INIS)

    Polystyrene is a negative electron beam resist whose exposure properties can be tuned simply by using different molecular weights (Mw). Most previous studies have used monodisperse polystyrene with a polydispersity index (PDI) of less than 1.1 in order to avoid any uncertainties. Here we show that despite the fact that polystyrene’s sensitivity is inversely proportional to its Mw, no noticeable effect of very broad molecular weight distribution on sensitivity, contrast and achievable resolution is observed. It is thus unnecessary to use the costly monodisperse polystyrene for electron beam lithography. Since the polydispersity is unknown for general purpose polystyrene, we simulated a high PDI polystyrene by mixing in a 1:1 weight ratio two polystyrene samples with Mw of 170 and 900 kg mol−1 for the high Mw range, and 2.5 and 13 kg mol−1 for the low Mw range. The exposure property of the mixture resembles that of a monodisperse polystyrene with similar number averaged molecular weight (Mn)-bar, which indicates that it is (Mn)-bar rather than (Mw)-bar (weight averaged molecular weight) that dominates the exposure properties of polystyrene resist. This also implies that polystyrene of a certain molecular weight can be simulated by a mixture of two polystyrenes having different molecular weights. (paper)

  11. Effect of molecular weight distribution on e-beam exposure properties of polystyrene

    Science.gov (United States)

    Dey, Ripon Kumar; Cui, Bo

    2013-06-01

    Polystyrene is a negative electron beam resist whose exposure properties can be tuned simply by using different molecular weights (Mw). Most previous studies have used monodisperse polystyrene with a polydispersity index (PDI) of less than 1.1 in order to avoid any uncertainties. Here we show that despite the fact that polystyrene’s sensitivity is inversely proportional to its Mw, no noticeable effect of very broad molecular weight distribution on sensitivity, contrast and achievable resolution is observed. It is thus unnecessary to use the costly monodisperse polystyrene for electron beam lithography. Since the polydispersity is unknown for general purpose polystyrene, we simulated a high PDI polystyrene by mixing in a 1:1 weight ratio two polystyrene samples with Mw of 170 and 900 kg mol-1 for the high Mw range, and 2.5 and 13 kg mol-1 for the low Mw range. The exposure property of the mixture resembles that of a monodisperse polystyrene with similar number averaged molecular weight \\overline{{Mn}}, which indicates that it is \\overline{{Mn}} rather than \\overline{{Mw}} (weight averaged molecular weight) that dominates the exposure properties of polystyrene resist. This also implies that polystyrene of a certain molecular weight can be simulated by a mixture of two polystyrenes having different molecular weights.

  12. Pulsed supersonic molecular beam for characterization of chemically active metal-organic complexes at surfaces

    Science.gov (United States)

    Lear, Amanda M.

    Metal-organic coordination networks (MOCNs) at surfaces consist of a complex of organic ligands bound to an atomic metal center. The MOCNs, when chosen appropriately, can form highly-ordered arrays at surfaces. Ultra-high vacuum surface studies allow control of surface composition and provide 2D growth restrictions, which lead to under-coordinated metal centers. These systems provide an opportunity to tailor the chemical function of the metal centers due to the steric restrictions imposed by the surface. Tuning the adsorption/desorption energy at a metal center and developing a cooperative environment for catalysis are the key scientific questions that motivate the construction of a molecular beam surface analysis system. Characterization of the created systems can be performed utilizing a pulsed supersonic molecular beam (PSMB) in unison with a quadrupole mass spectrometer. A PSMB allows for the highly controlled delivery of reactants with well-defined energy to a given platform making it possible to elucidate detailed chemical tuning information. In this thesis, a summary of prior theoretical molecular beam derivations is provided. Design considerations and an overview of the construction procedure for the current molecular beam apparatus, including initial characterization experiments, are presented. By impinging an Ar beam on a Ag(111) surface, the location of the specular angle (˜65°) and rough sample perimeter coordinates were determined. Additionally, surface analysis experiments, mainly Auger Electron Spectroscopy (AES), were performed to investigate the oxidation of epitaxial graphene on the SiC(0001) surface utilizing an oxygen cracking method. The AES experiments are described in detail and highlight the challenges that were faced when several different graphene samples were used for the oxygen adsorption/desorption experiments.

  13. Optical Properties and Microstructure of Ta2O5 Thin Films Prepared by Ion Assisted Electron Beam Evaporation

    Institute of Scientific and Technical Information of China (English)

    ZHANG Guangyong; XUE Yiyu; GUO Peitao; WANG Hanhua; MA Zhongjie

    2008-01-01

    An effective method for determining the refractive index of weak absorption transparent thin films was presented, which is also applicable to other weak absorption dielectric thin films.The as-deposited Ta2O5 thin films prepared by ion assisted electron beam evaporation showed a maxima transmittance as high as 93% which was close to that of the bare substrate, and exhibited a blue shift when the substrate temperature increased from room temperature to 250 ℃. The refractive index seemed to be immune to the substrate temperature and film thickness with its value about 2.14 at incidence wavelength of 550 nm. The surface morphology measured by atomic force microscopy (AFM) revealed that the microstructures lead to the slim optical difference, which was the interplay of substrate temperature and assisted ion beam.

  14. Laser molecular beam epitaxy of ZnO thin films and heterostructures

    OpenAIRE

    Opel, Matthias; Geprägs, Stephan; Althammer, Matthias; Brenninger, Thomas; Gross, Rudolf

    2013-01-01

    We report on the growth of epitaxial ZnO thin films and ZnO based heterostructures on sapphire substrates by laser molecular beam epitaxy (MBE). We first discuss some recent developments in laser-MBE such as flexible ultra-violet laser beam optics, infrared laser heating systems or the use of atomic oxygen and nitrogen sources, and describe the technical realization of our advanced laser-MBE system. Then we describe the optimization of the deposition parameters for ZnO films such as laser flu...

  15. Amplified spontaneous emission of a molecular nitrogen laser excited by an intense relativistic electron beam

    International Nuclear Information System (INIS)

    Report of a study of the shape and length of the output pulse of a molecular nitrogen laser, excited by an intense relativistic electron beam, is described. The rate equations are computer solved, at first ignoring the spontaneous emission during the excitation process. Afterwards the rate equations are solved taking into account excitation functions of various shapes and lengths, related to electron-beam pulses of a few kA and a few nsec. Laser power output, energy, and peak-time, i.e., the time at which the gain reaches its saturated value, are given and discussed as functions of the intensity and rise time of the excitation functions

  16. Proposed Molecular Beam Determination of Energy Partition in the Photodissociation of Polyatomic Molecules

    Science.gov (United States)

    Zare, P. N.; Herschbach, D. R.

    1964-01-29

    Conventional photochemical experiments give no information about the partitioning of energy between translational recoil and internal excitation of the fragment molecules formed in photodissociation of a polyatomic molecule. In a molecular beam experiment, it becomes possible to determine the energy partition from the form of the laboratory angular distribution of one of the photodissociation products. A general kinematic analysis is worked out in detail, and the uncertainty introduced by the finite angular resolution of the apparatus and the velocity spread in the parent beam is examined. The experimental requirements are evaluated for he photolysis of methyl iodide by the 2537 angstrom Hg line.

  17. Growth of thin films of low molecular weight proteins by matrix assisted pulsed laser evaporation (MAPLE)

    DEFF Research Database (Denmark)

    Matei, Andreea; Schou, Jørgen; Constantinescu, C.;

    2011-01-01

    Thin films of lysozyme and myoglobin grown by matrix assisted pulsed laser evaporation (MAPLE) from a water ice matrix have been investigated. The deposition rate of these two low molecular weight proteins (lysozyme: 14307 amu and myoglobin: 17083 amu) exhibits a maximum of about 1–2 ng/cm2 per...... pulse at a fluence of 1–2 J/cm2 and decreases slowly with increasing fluence. This rate is presumably determined by the matrix rather by the proteins. A significant fraction of the proteins are intact in the film as determined by MALDI (Matrix assisted laser desorption ionization) spectrometry. The...... results for lysozyme demonstrate that the fragmentation rate of the proteins during the MAPLE process is not influenced by the pH of the water solution prior to freezing....

  18. Study of the growth of biaxially textured CeO2 films during ion-beam-assisted deposition

    International Nuclear Information System (INIS)

    Biaxially textured CeO2 films were deposited on Hastelloy C276 substrates at room temperature using ion-beam-assisted e-beam evaporation with the ion beam directed at 55 deg. to the normal of the film plane. The crystalline structure and in-plane orientation of films were investigated by x-ray diffraction 2θ-scan and φ-scan. The orientation of the films was studied as a function of ion-to-atom ratio and film thickness. The ion-to-atom ratio was varied by independently adjusting the deposition rate and the ion current density. Under optimum condition, (200) textured CeO2 films have been successfully grown on Hastelloy C276

  19. Study of the growth of biaxially textured CeO{sub 2} films during ion-beam-assisted deposition

    Energy Technology Data Exchange (ETDEWEB)

    Kim, Chang Su [Department of Metallurgical Engineering, Yonsei University, Seodaemoon Ku, Shinchon Dong 134, Seoul 120-749 (Korea, Republic of); Jo, Sung Jin [Department of Metallurgical Engineering, Yonsei University, Seodaemoon Ku, Shinchon Dong 134, Seoul 120-749 (Korea, Republic of); Jeong, Soon Moon [Department of Metallurgical Engineering, Yonsei University, Seodaemoon Ku, Shinchon Dong 134, Seoul 120-749 (Korea, Republic of); Kim, Woo Jin [Department of Metallurgical Engineering, Yonsei University, Seodaemoon Ku, Shinchon Dong 134, Seoul 120-749 (Korea, Republic of); Baik, Hong Koo [Department of Metallurgical Engineering, Yonsei University, Seodaemoon Ku, Shinchon Dong 134, Seoul 120-749 (Korea, Republic of); Lee, Se Jong [Department of Materials Science and Engineering, Kyungsung University, Busan 608-736 (Korea, Republic of); Song, Kie Moon [Department of Applied Physics, Konkuk University, Chungju 380-701 (Korea, Republic of)

    2005-03-01

    Biaxially textured CeO{sub 2} films were deposited on Hastelloy C276 substrates at room temperature using ion-beam-assisted e-beam evaporation with the ion beam directed at 55 deg. to the normal of the film plane. The crystalline structure and in-plane orientation of films were investigated by x-ray diffraction 2{theta}-scan and {phi}-scan. The orientation of the films was studied as a function of ion-to-atom ratio and film thickness. The ion-to-atom ratio was varied by independently adjusting the deposition rate and the ion current density. Under optimum condition, (200) textured CeO{sub 2} films have been successfully grown on Hastelloy C276.

  20. Study of the growth of biaxially textured CeO2 films during ion-beam-assisted deposition

    Science.gov (United States)

    Kim, Chang Su; Jo, Sung Jin; Jeong, Soon Moon; Kim, Woo Jin; Baik, Hong Koo; Lee, Se Jong; Song, Kie Moon

    2005-03-01

    Biaxially textured CeO2 films were deposited on Hastelloy C276 substrates at room temperature using ion-beam-assisted e-beam evaporation with the ion beam directed at 55° to the normal of the film plane. The crystalline structure and in-plane orientation of films were investigated by x-ray diffraction 2θ-scan and phgr-scan. The orientation of the films was studied as a function of ion-to-atom ratio and film thickness. The ion-to-atom ratio was varied by independently adjusting the deposition rate and the ion current density. Under optimum condition, (200) textured CeO2 films have been successfully grown on Hastelloy C276.

  1. Measuring the density of a molecular cluster injector via visible emission from an electron beam

    International Nuclear Information System (INIS)

    A method to measure the density distribution of a dense hydrogen gas jet is presented. A Mach 5.5 nozzle is cooled to 80 K to form a flow capable of molecular cluster formation. A 250 V, 10 mA electron beam collides with the jet and produces Hα emission that is viewed by a fast camera. The high density of the jet, several 1016 cm-3, results in substantial electron depletion, which attenuates the Hα emission. The attenuated emission measurement, combined with a simplified electron-molecule collision model, allows us to determine the molecular density profile via a simple iterative calculation.

  2. History of molecular beam research: personal reminiscences of the important evolutionary period 1919--1933

    International Nuclear Information System (INIS)

    Dr. Immanuel Estermann was engaged in writing a book on the History of the Molecular Beam Method when he died in Haifa, Israel on 31 March 1973. The original plan of the manuscript was to cover three distinct historical periods: the first, the years 1911--1933, when the center of research in molecular beams was at the University of Hamburg; the second, from 1933 to the outbreak of World War II, when the most active laboratory working in the field was at Columbia University; and the postwar period, when many laboratories on both sides of the Atlantic became actively engaged in this field. The material in this paper deals primarily with the early historical period and would have formed the essence of the first two chapters of the book. In addition to presenting interesting historical facts on a crucial period in the development of quantum physics, it contains some amusing historical sidelights on the research personalities that dominated that period

  3. Super-distant molecular hybridization of plant seeds by ion beam-mediated gene cluster

    Institute of Scientific and Technical Information of China (English)

    2001-01-01

    The N beam-mediated distant molecular hybridization between Ginkgo biloba I and watermelon was studied. The results showed that the ester gene of Ginkgo biloba L was successfully expressed in two varieties of watermelon. 3-16 and SR2-14-2, in both of which the ester quantities were measured as 17.0756 μg/g and 45.9998 μg/g respectively. Meanwhile, superoxide dismutase (SOD) activity in leaves of the watennelon expressing ester gene was increased twofold as compared to that of the control, showing that ion beam could mediate distant and/or super-distant donor gene expression in the cells of a receptor. Furthermore, the molecular nechanism of distant hybridization was analyzed.

  4. Photo-metalorganic molecular-beam epitaxy: A new epitaxial growth technique

    Energy Technology Data Exchange (ETDEWEB)

    Tokumitsu, E.; Yamada, T.; Konagai, M.; Takahashi, K.

    1989-05-01

    Metalorganic molecular-beam epitaxy (MOMBE) combines many important advantages of molecular-beam epitaxy and metalorganic chemical vapor deposition. One of the most important features of MOMBE is that photochemical reaction can be used and we can call this new technique ''photo-MOMBE.'' Triisobutylaluminum (TIBA) has been used in photo-MOMBE instead of triethylaluminum (TEA) as a new aluminum source in order to enhance the photodecomposition. The optical absorption coefficient of TIBA for 193 nm was found to be three times greater than that of TEA. Selective deposition of Al, AlAs, and GaAlAs was carried out by using an ArF excimer laser. The Al mole fraction of GaAlAs ternary alloy grown with the excimer laser irradiation was greater than that of the film grown without the laser irradiation.

  5. Photo-metalorganic molecular-beam epitaxy: A new epitaxial growth technique

    International Nuclear Information System (INIS)

    Metalorganic molecular-beam epitaxy (MOMBE) combines many important advantages of molecular-beam epitaxy and metalorganic chemical vapor deposition. One of the most important features of MOMBE is that photochemical reaction can be used and we can call this new technique ''photo-MOMBE.'' Triisobutylaluminum (TIBA) has been used in photo-MOMBE instead of triethylaluminum (TEA) as a new aluminum source in order to enhance the photodecomposition. The optical absorption coefficient of TIBA for 193 nm was found to be three times greater than that of TEA. Selective deposition of Al, AlAs, and GaAlAs was carried out by using an ArF excimer laser. The Al mole fraction of GaAlAs ternary alloy grown with the excimer laser irradiation was greater than that of the film grown without the laser irradiation

  6. Prospects for high-resolution microwave spectroscopy of methanol in a Stark-deflected molecular beam

    CERN Document Server

    Jansen, Paul; Meng, Congsen; Lees, Ronald M; Janssen, Maurice H M; Ubachs, Wim; Bethlem, Hendrick L

    2013-01-01

    Recently, the extremely sensitive torsion-rotation transitions in methanol have been used to set a tight constraint on a possible variation of the proton-to-electron mass ratio over cosmological time scales. In order to improve this constraint, laboratory data of increased accuracy will be required. Here, we explore the possibility for performing high-resolution spectroscopy on methanol in a Stark-deflected molecular beam. We have calculated the Stark shift of the lower rotational levels in the ground torsion-vibrational state of CH3OH and CD3OH molecules, and have used this to simulate trajectories through a typical molecular beam resonance setup. Furthermore, we have determined the efficiency of non-resonant multi-photon ionization of methanol molecules using a femtosecond laser pulse. The described setup is in principle suited to measure microwave transitions in CH3OH at an accuracy below 10^{-8}.

  7. The impact of treatment density and molecular weight for fractional laser-assisted drug delivery

    DEFF Research Database (Denmark)

    Haak, Christina S; Bhayana, Brijesh; Farinelli, William A; Anderson, R Rox; Haedersdal, Merete

    2012-01-01

    treatment density (% of skin occupied by channels) and molecular weight (MW) for fractional CO(2) laser-assisted drug delivery. AFXL substantially increased intra- and transcutaneous delivery of polyethylene glycols (PEGs) in a MW range from 240 to 4300 Da (Nuclear Magnetic Resonance, p......Ablative fractional lasers (AFXL) facilitate uptake of topically applied drugs by creating narrow open micro-channels into the skin, but there is limited information on optimal laser settings for delivery of specific molecules. The objective of this study was to investigate the impact of laser...

  8. Molecular Beam Epitaxial Growth of GaAs on (631) Oriented Substrates

    International Nuclear Information System (INIS)

    In this work, we report the study of the homoepitaxial growth of GaAs on (631) oriented substrates by molecular beam epitaxy (MBE). We observed the spontaneous formation of a high density of large scale features on the surface. The hilly like features are elongated towards the [-5, 9, 3] direction. We show the dependence of these structures with the growth conditions and we present the possibility of to create quantum wires structures on this surface

  9. Gas source molecular beam epitaxy of GaN with hydrazine on spinel substrates

    Science.gov (United States)

    Nikishin, S. A.; Temkin, H.; Antipov, V. G.; Guriev, A. I.; Zubrilov, A. S.; Elyukhin, V. A.; Faleev, N. N.; Kyutt, R. N.; Chin, A. K.

    1998-05-01

    Growth of high quality wurtzite-structure GaN layers on (111) MgAl2O4 by gas source molecular beam epitaxy is described. Hydrazine was used as a source of active nitrogen. In situ reflection high energy electron diffraction was used to monitor the growth mode. Two-dimensional growth was obtained at temperatures above 750 °C on multi-step GaN buffer layers. The resulting GaN films show excellent luminescence properties.

  10. Low phonon energy Nd:LaF3 channel waveguide lasers fabricated by molecular beam epitaxy

    OpenAIRE

    Bhutta, T.; Chardon, A.M.; Shepherd, D. P.; Daran, E.; Serrano, C.; Munoz-Yague, A.

    2001-01-01

    We report the first fabrication and laser operation of channel waveguides based on LaF3 planar thin films grown by molecular beam epitaxy. To our knowledge, this is the lowest phonon energy dielectric material to have shown guided-wave laser operation to date. A full characterization, in terms of spectroscopy, laser results, and propagation losses, is given for the planar thin films upon which the channel waveguides are based. Two channel-fabrication methods are then described, the first invo...

  11. Carrier dynamics in ZnxCd1-xO films grown by molecular beam epitaxy

    Science.gov (United States)

    Cheng, F. J.; Lee, Y. C.; Hu, S. Y.; Lin, Y. C.; Tiong, K. K.; Chou, W. C.

    2016-05-01

    In this work, the carrier dynamics in Zn1-xCdxO thin films with different Cd contents grown by molecular beam epitaxy system have been investigated using photoluminescence and time-resolved photoluminescence measurements. The carrier lifetime can be estimated from the PL decay curve fitted by triple exponential function. The emission energy dependence and temperature dependence of the PL decay time indicate that carrier localization dominate the luminescence mechanism of the ZnCdO alloy semiconductor.

  12. Photon assisted current in molecular nanojunctions with novel types of contacts

    Energy Technology Data Exchange (ETDEWEB)

    Fainberg, Boris D. [Faculty of Science, Holon Institute of Technology, 58102 Holon, Israel and School of Chemistry, Tel-Aviv University, 69978 Tel-Aviv (Israel)

    2014-03-31

    We propose new approaches to coherent control of transport via molecular junctions, which bypasses several of the hurdles to experimental realization of optically manipulated nanoelectronics noted in the previous literature. The first method is based on the application of intrinsic semiconductor contacts and optical frequencies below the semiconductor bandgap. Our analytical theory predicts a new phenomenon, referred to as coherent destruction of induced tunnelling, which extends the phenomenon of coherent destruction of tunnelling frequently discussed in the previous literature. We also propose to use graphene electrodes as a platform for effective photon assisted tunneling through molecular conduction nanojunctions. We predict dramatic increasing currents evaluated at side-band energies ∼nħω (n is a whole number) related to the modification of graphene gapless spectrum under the action of external electromagnetic field of frequency ω. Our results illustrate the potential of semiconductor and graphene contacts in coherent control of photocurrent.

  13. Photon assisted current in molecular nanojunctions with novel types of contacts

    International Nuclear Information System (INIS)

    We propose new approaches to coherent control of transport via molecular junctions, which bypasses several of the hurdles to experimental realization of optically manipulated nanoelectronics noted in the previous literature. The first method is based on the application of intrinsic semiconductor contacts and optical frequencies below the semiconductor bandgap. Our analytical theory predicts a new phenomenon, referred to as coherent destruction of induced tunnelling, which extends the phenomenon of coherent destruction of tunnelling frequently discussed in the previous literature. We also propose to use graphene electrodes as a platform for effective photon assisted tunneling through molecular conduction nanojunctions. We predict dramatic increasing currents evaluated at side-band energies ∼nħω (n is a whole number) related to the modification of graphene gapless spectrum under the action of external electromagnetic field of frequency ω. Our results illustrate the potential of semiconductor and graphene contacts in coherent control of photocurrent

  14. Molecular marker-assisted selection for resistance to pathogens in tomato

    International Nuclear Information System (INIS)

    Since the 1980s, the use of molecular markers has been suggested to improve the efficiency of releasing resistant varieties, thus overcoming difficulties met with classical breeding. For tomato, a high-density molecular map is available in which more than 40 resistance genes are localized. Markers linked to these genes can be used to speed up gene transfer and pyramiding. Suitable PCR markers targeting resistance genes were constructed directly on the sequences of resistance genes or on restriction fragment length polymorphisms (RFLPs) tightly linked to them, and used to select resistant genotypes in backcross schemes. In some cases, the BC5 generation was reached, and genotypes that cumulated two homozygous resistant genes were also obtained. These results supported the feasibility of using marker-assisted selection (MAS) in tomato and reinforcing the potential of this approach for other genes, which is today also driven by the development of new techniques and increasing knowledge about the tomato genome. (author)

  15. Thermometry of Guided Molecular Beams from a Cryogenic Buffer-Gas Cell

    CERN Document Server

    Wu, X; Zeppenfeld, M; Chervenkov, S; Rempe, G

    2016-01-01

    We present a comprehensive characterization of cold molecular beams from a cryogenic buffer-gas cell, providing an insight into the physics of buffer-gas cooling. Cold molecular beams are extracted from a cryogenic cell by electrostatic guiding, which is also used to measure their velocity distribution. Molecules' rotational-state distribution is probed via radio-frequency resonant depletion spectroscopy. With the help of complete trajectory simulations, yielding the guiding efficiency for all of the thermally populated states, we are able to determine both the rotational and the translational temperature of the molecules at the output of the buffer-gas cell. This thermometry method is demonstrated for various regimes of buffer-gas cooling and beam formation as well as for molecular species of different sizes, $\\rm{CH_3F}$ and $\\rm{CF_3CCH}$. Comparison between the rotational and translational temperatures provides evidence of faster rotational thermalization for the $\\rm{CH_3F-He}$ system in the limit of low...

  16. Electron ionization LC-MS with supersonic molecular beams--the new concept, benefits and applications.

    Science.gov (United States)

    Seemann, Boaz; Alon, Tal; Tsizin, Svetlana; Fialkov, Alexander B; Amirav, Aviv

    2015-11-01

    A new type of electron ionization LC-MS with supersonic molecular beams (EI-LC-MS with SMB) is described. This system and its operational methods are based on pneumatic spray formation of the LC liquid flow in a heated spray vaporization chamber, full sample thermal vaporization and subsequent electron ionization of vibrationally cold molecules in supersonic molecular beams. The vaporized sample compounds are transferred into a supersonic nozzle via a flow restrictor capillary. Consequently, while the pneumatic spray is formed and vaporized at above atmospheric pressure the supersonic nozzle backing pressure is about 0.15 Bar for the formation of supersonic molecular beams with vibrationally cold sample molecules without cluster formation with the solvent vapor. The sample compounds are ionized in a fly-though EI ion source as vibrationally cold molecules in the SMB, resulting in 'Cold EI' (EI of vibrationally cold molecules) mass spectra that exhibit the standard EI fragments combined with enhanced molecular ions. We evaluated the EI-LC-MS with SMB system and demonstrated its effectiveness in NIST library sample identification which is complemented with the availability of enhanced molecular ions. The EI-LC-MS with SMB system is characterized by linear response of five orders of magnitude and uniform compound independent response including for non-polar compounds. This feature improves sample quantitation that can be approximated without compound specific calibration. Cold EI, like EI, is free from ion suppression and/or enhancement effects (that plague ESI and/or APCI) which facilitate faster LC separation because full separation is not essential. The absence of ion suppression effects enables the exploration of fast flow injection MS-MS as an alternative to lengthy LC-MS analysis. These features are demonstrated in a few examples, and the analysis of the main ingredients of Cannabis on a few Cannabis flower extracts is demonstrated. Finally, the advantages of

  17. Collapse of a composite beam made from ultra high molecular-weight polyethylene fibres

    Science.gov (United States)

    Liu, G.; Thouless, M. D.; Deshpande, V. S.; Fleck, N. A.

    2014-02-01

    Hot-pressed laminates with a [0/90]48 lay-up, consisting of 83% by volume of ultra high molecular-weight polyethylene (UHMWPE) fibres, and 17% by volume of polyurethane (PU) matrix, were cut into cantilever beams and subjected to transverse end-loading. The collapse mechanisms were observed both visually and by X-ray scans. Short beams deform elastically and collapse plastically in longitudinal shear, with a shear strength comparable to that observed in double notch, interlaminar shear tests. In contrast, long cantilever beams deform in bending and collapse via a plastic hinge at the built-in end of the beam. The plastic hinge is formed by two wedge-shaped microbuckle zones that grow in size and in intensity with increasing hinge rotation. This new mode of microbuckling under macroscopic bending involves both elastic bending and shearing of the plies, and plastic shear of the interface between each ply. The double-wedge pattern contrasts with the more usual parallel-sided plastic microbuckle that occurs in uniaxial compression. Finite element simulations and analytical models give additional insight into the dominant material and geometric parameters that dictate the collapse response of the UHMWPE composite beam in bending. Detailed comparisons between the observed and predicted collapse responses are used in order to construct a constitutive model for laminated UHMWPE composites.

  18. Mechanical properties and wear resistance of ion-beam-assisted sputter-deposited NiTi(N) coatings

    International Nuclear Information System (INIS)

    Thin films are deposited on an austenitic type 304L stainless steel using the sputtering of an Ni49Ti51 target with 1.5 keV N+ ions. The influence of a simultaneous 160 keV Ar+ implantation on hardness and wear resistance is studied. Hardness is measured with a nanoindenter. N+ reactive sputtering forms a coating harder than the substrate. The hardness increases by 80% when the eposit is ion beam assisted. Transmission electron microscopy analyses of the thin films reveal that the N+ sputtered films present a large content of nitrogen which forms with titanium strong disorganized metal-metalloid Ti-N bonds; when ion implantation is simultaneously used, very tiny crystalline TiN precipitates embedded in an amorphous matrix are observed. This could explain the increase in hardness. The simultaneous ion irradiation would favour TiN precipitation through an enhanced diffusion mechanism in the cascades. Subsequent wear resistance of these coatings is measured through three-dimensional profile analyses of the wear tracks obtained after tests performed on a pin-on-disc machine. It is shown that sputtered NiTi(N) coatings largely increase the wear resistance. When the deposit is ion beam assisted, the improvement is much more pronounced; it can be related to either the increase in the hardness or the ion beam mixing of the interface, or both these processes. The influence of the coating thickness and the ratio of the implanted ions to the deposited atoms are also studied. (orig.)

  19. Modeling evaporation, ion-beam assist, and magnetron sputtering of thin metal films over realistic time scales

    Science.gov (United States)

    Blackwell, S.; Smith, R.; Kenny, S. D.; Walls, J. M.

    2012-07-01

    A long-time-scale dynamics technique has been used to model the evaporation, ion-beam assist, and magnetron sputtering of thin metal films over realistic time scales. Two fcc metals have been investigated: silver and aluminum. We illustrate how the technique can be used to model growth of these films over experimental time scales, while investigating individual growth mechanisms and surface diffusion events. Long-time dynamics is achieved through an on-the-fly kinetic Monte Carlo method, which determines diffusion pathways and barriers, in parallel, with no prior knowledge of the involved transitions. It was found that Ag has the ability to grow smooth surfaces, using several mechanisms including multiple-atom concerted motion, exchange mechanisms, and damage and repair systems. Ag {111} and {100} grew dense, complete, and crystalline film when sputtering was simulated, whereas evaporation produced incomplete layers. The inclusion of Ar in the ion-beam-assisted evaporation of Ag {111} aided growth by transferring more energy to the surface atoms allowing increased diffusion. Al {111}, however, shows slightly different patterns; growth via evaporation and magnetron sputtering shows only slight differences and the inclusion of the ion-beam assist actually damages the film beyond repair, producing subsurface Ar clusters where Al atoms were displaced creating voids throughout the film. Al {100}, similar to Ag {100}, grows denser and more complete film when grown via sputtering rather than evaporation. Results show that the energy of the deposition method used plays a vital role in the resulting thin film and substrate quality.

  20. Study of TiCxNy films formed by ion beam assisted deposition on 9Cr18 steel

    International Nuclear Information System (INIS)

    The TiCxNy films were formed on 9Cr18 steel matrix using the ion beam assisted deposition. The TEM analysis revealed the films with a polycrystalline structure with (111), (200) and (220) preferred orientation. The fact that TiCxNy films contain oxygen coordination was further confirmed by AES and XPS. It was found that microhardness of the films was dependent on its N content, and it was decreased for an excessively high N content. An assisted dose of 3 x 1017/cm2 is optimum in this experiment. A dry friction test indicated that oxidation resistance of the films is excellent, and oxidation of the steel matrix in the friction process can be obviously inhibited. Both the abrasive and adhesive wears of matrix are improved, and a trend of transformation from adhesive into abrasive wear appears for the steel matrix

  1. Ion beam etching of high resolution structures in Ta2O5 for grating-assisted directional coupler applications

    International Nuclear Information System (INIS)

    An investigation on thin Ta2O5 films patterning using argon ion beam etching (IBE) is presented. The etch rates are characterised by varying the angle of incidence of the beam onto the substrate. Ta2O5 gratings with a period of 2.2 μm (1.1 μm linewidth) and 0.25 μm thickness are fabricated using an angle of incidence of 0 deg . The resulting Ta2O5 grating cross sectional profiles are analysed using AFM and SEM imaging. A fabrication method is thus demonstrated which could be used to implement wavelength selective gratings in applications such as grating-assisted directional couplers (GADCs)

  2. Structural and composition investigations at delayered locations of low k integrated circuit device by gas-assisted focused ion beam

    International Nuclear Information System (INIS)

    The authors report a new delayering technique – gas-assisted focused ion beam (FIB) method and its effects on the top layer materials of integrated circuit (IC) device. It demonstrates a highly efficient failure analysis with investigations on the precise location. After removing the dielectric layers under the bombardment of an ion beam, the chemical composition of the top layer was altered with the reduced oxygen content. Further energy-dispersive x-ray spectroscopy and Fourier transform infrared analysis revealed that the oxygen reduction lead to appreciable silicon suboxide formation. Our findings with structural and composition alteration of dielectric layer after FIB delayering open up a new insight avenue for the failure analysis in IC devices

  3. Intense electron beams from GaAs photocathodes as a tool for molecular and atomic physics

    Energy Technology Data Exchange (ETDEWEB)

    Krantz, Claude

    2009-10-28

    We present cesium-coated GaAs photocathodes as reliable sources of intense, quasi-monoenergetic electron beams in atomic and molecular physics experiments. In long-time operation of the Electron Target of the ion storage ring TSR in Heidelberg, cold electron beams could be realised at steadily improving intensity and reliability. Minimisation of processes degrading the quantum efficiency allowed to increase the extractable current to more than 1mA at usable cathode lifetimes of 24 h or more. The benefits of the cold electron beam with respect to its application to electron cooling and electron-ion recombination experiments are discussed. Benchmark experiments demonstrate the superior cooling force and energy resolution of the photoelectron beam compared to its thermionic counterparts. The long period of operation allowed to study the long-time behaviour of the GaAs samples during multiple usage cycles at the Electron Target and repeated in-vacuum surface cleaning by atomic hydrogen exposure. An electron emission spectroscopy setup has been implemented at the photocathode preparation chamber of the Electron Target. Among others, this new facility opened the way to a novel application of GaAs (Cs) photocathodes as robust, ultraviolet-driven electron emitters. Based on this principle, a prototype of an electron gun, designed for implementation at the HITRAP setup at GSI, has been built and taken into operation successfully. (orig.)

  4. Effect Of Electron Beam Irradiation On The Molecular And Colour Properties Of Chlorinated Polyvinyl Chloride

    International Nuclear Information System (INIS)

    Polymeric films of chlorinated polyvinyl chloride (CPVC) of nearly 0.25 mm thickness could be obtained by dissolving one gram of CPVC in 10 ml of freshly distilled tetrahydrofurane. Samples from these films were irradiated with different electron beam doses in the range 5-100 kGy. The structural modifications in the electron beam irradiated CPVC samples have been studied as a function of dose using intrinsic viscosity. The results indicate that the electron beam irradiation of CPVC in the dose range 40-100 kGy resulted in an improvement in its intrinsic viscosity and thus in its average molecular mass. Furthermore, the transmission of these samples in the wavelength range 200-2500 nm, as well as any colour changes, was studied. Using the transmission data, both the tri stimulus and the Commission Internationale de l'Eclairage (CIE) LAB coordinate values were calculated. In addition, the colour differences between the non-irradiated sample and those irradiated with different doses were calculated. The results indicate that the CPVC polymer has more response to colour change by electron beam irradiation and accompanied by a significant increase in the yellow and green colour components.

  5. Intense electron beams from GaAs photocathodes as a tool for molecular and atomic physics

    International Nuclear Information System (INIS)

    We present cesium-coated GaAs photocathodes as reliable sources of intense, quasi-monoenergetic electron beams in atomic and molecular physics experiments. In long-time operation of the Electron Target of the ion storage ring TSR in Heidelberg, cold electron beams could be realised at steadily improving intensity and reliability. Minimisation of processes degrading the quantum efficiency allowed to increase the extractable current to more than 1mA at usable cathode lifetimes of 24 h or more. The benefits of the cold electron beam with respect to its application to electron cooling and electron-ion recombination experiments are discussed. Benchmark experiments demonstrate the superior cooling force and energy resolution of the photoelectron beam compared to its thermionic counterparts. The long period of operation allowed to study the long-time behaviour of the GaAs samples during multiple usage cycles at the Electron Target and repeated in-vacuum surface cleaning by atomic hydrogen exposure. An electron emission spectroscopy setup has been implemented at the photocathode preparation chamber of the Electron Target. Among others, this new facility opened the way to a novel application of GaAs (Cs) photocathodes as robust, ultraviolet-driven electron emitters. Based on this principle, a prototype of an electron gun, designed for implementation at the HITRAP setup at GSI, has been built and taken into operation successfully. (orig.)

  6. Hydrogen cluster-like behaviour during supersonic molecular beam injection on the HL-1M tokamak

    International Nuclear Information System (INIS)

    Pulsed supersonic molecular beam injection (SMBI) has been developed successfully and used in the HL-1M tokamak. It is an attempt to enhance the penetration depth and fuelling efficiency. With a penetration depth of hydrogen particles beyond 8 cm, the rising rate of electron density, dn-bare/dt, was up to 7.6x1020m-3·s-1 without disruption, and reached the highest plasma density n-bare=8.2x1019m-3 on HL-1M. With SMBI the plasma energy confinement time, τE, measured by diamagnetism is 10-30 % longer than that with gas puffing when other discharge conditions are kept the same. The fuelling method of SMBI has recently been improved to make a survey of the cluster effects within the beam. A series of new phenomena show the interaction of the beam (including clusters) with the toroidal plasma. Hydrogen clusters may be produced in the beam according to the Hagena empirical scaling law of clustering onset, Γ*=(kd0.85P0)/T02.29). If Γ*>100, clusters will form. In the present experiment Γ* is about 127. (author)

  7. Redundant Sb condensation on GaSb epilayers grown by molecular beam epitaxy during cooling procedure

    International Nuclear Information System (INIS)

    The effect of four different cooling receipts on the surface morphologies of unintentionally-doped GaSb epilayers on GaSb (100) substrates grown by molecular beam epitaxy is reported. Those receipts include three different Sb beam equivalent pressure (BEP) levels and two different termination temperatures. Surface morphologies of epilayers were examined by wet etching, surface profiler, atomic force microscopy, scanning electron microscopy and Raman spectroscopy. The results demonstrate that during the cooling period, a Sb BEP of 4.00 × 10−4 Pa at a termination temperature of 400 °C induces a smooth surface without Sb condensation whereas same Sb BEP at a termination temperature of 350 °C forms a 300 nm thick Sb layer on the surface. In addition, it is revealed that by applying a wet etching procedure and using a surface profiler it is possible to identify this condensed layer from the two-sloped feature of mesa profile. - Highlights: • Sb beam flux termination temperature is crucial for redundant Sb condensation. • Sb beam flux level has a role on the thickness of redundant condensed Sb layer. • Redundant Sb layer thickness can be measured by two-sloped mesa structure

  8. Relation between electrical resistivity and argon concentration of copper thin films prepared by ion-beam-assisted deposition

    International Nuclear Information System (INIS)

    Particle Induced X-ray Emission (PIXE) measurements were applied to the evaluation of the argon concentration in the copper thin films prepared by Ion-Beam-Assisted Deposition (IBAD) technique. The relation between electrical resistivity and argon concentration in the films were investigated. The crystallinity and the atomic density were also examined with x-ray diffraction and Rutherford Backscattering Spectrometry (RBS). The obtained results indicated that although the grain size of the films becomes larger with the ion irradiation, electrical resistivity increases with an increase in the ion quantity. (author)

  9. Crossed molecular beam studies of unimolecular reaction dynamics. [Angular and velocity distributions

    Energy Technology Data Exchange (ETDEWEB)

    Buss, R.J.

    1979-04-01

    The study of seven radical-molecule reactions using the crossed molecular beam technique with supersonic nozzle beams is reported. Product angular and velocity distributions were obtained and compared with statistical calculations in order to identify dynamical features of the reactions. In the reaction of chlorine and fluorine atoms with vinyl bromide, the product energy distributions are found to deviate from predictions of the statistical model. A similar effect is observed in the reaction of chlorine atoms with 1, 2 and 3-bromopropene. The reaction of oxygen atoms with ICl and CF/sub 3/I has been used to obtain an improved value of the IO bond energy, 55.0 +- 2.0 kcal mol/sup -1/. In all reactions studied, the product energy and angular distributions are found to be coupled, and this is attributed to a kinematic effect of the conservation of angular momentum.

  10. Shot-noise-limited spin measurements in a pulsed molecular beam

    CERN Document Server

    Kirilov, E; Doyle, J M; Gabrielse, G; Gurevich, Y V; Hess, P W; Hutzler, N R; O'Leary, B R; Petrik, E; Spaun, B; Vutha, A C; DeMille, D

    2013-01-01

    Heavy diatomic molecules have been identified as good candidates for use in electron electric dipole moment (eEDM) searches. Suitable molecular species can be produced in pulsed beams, but with a total flux and/or temporal evolution that varies significantly from pulse to pulse. These variations can degrade the experimental sensitivity to changes in spin precession phase of an electri- cally polarized state, which is the observable of interest for an eEDM measurement. We present two methods for measurement of the phase that provide immunity to beam temporal variations, and make it possible to reach shot-noise-limited sensitivity. Each method employs rapid projection of the spin state onto both components of an orthonormal basis. We demonstrate both methods using the eEDM-sensitive H state of thorium monoxide (ThO), and use one of them to measure the magnetic moment of this state with increased accuracy relative to previous determinations.

  11. Photostop: Production of zero-velocity molecules by photodissociation in a molecular beam

    CERN Document Server

    Trottier, Alexandre; Wrede, Eckart

    2011-01-01

    We have demonstrated a new, accessible and economical technique, dubbed photostop, for producing high densities of trappable molecules. Direct measurements are presented of NO molecules produced with a narrow velocity distribution centered at zero in the laboratory frame. NO2, initially cooled in a pulsed molecular beam, is photodissociated such that the recoil velocity of the NO photofragments cancels out the velocity of the beam. NO(X^2Pi_3/2, v=0, J=1.5) molecules are observed up to 10 mircoseconds after the dissociation event in the probe volume at an estimated density of 1E7 cm-3 per quantum state and at a translational temperature of 1.6 K. Through the choice of suitable precursors, photostop has the potential to extend the list atoms and molecules that can be slowed or trapped. It should be possible to accumulate density in a trap through consecutive loading of multiple pulses.

  12. A bright, cold, velocity-controlled molecular beam by frequency-chirped laser slowing

    CERN Document Server

    Truppe, S; Hambach, M; Fitch, N; Wall, T E; Hinds, E A; Sauer, B E; Tarbutt, M R

    2016-01-01

    Using frequency-chirped radiation pressure slowing we precisely control the velocity of a pulsed CaF molecular beam down to a few m/s, compressing its velocity spread by a factor of 10 while retaining its high brightness. When the final velocity is 15 m/s the flux, measured 1.3 m from the source, is $8 \\times 10^5$ molecules per cm$^2$ per shot in a single rovibrational state. The beam is suitable for loading a magneto-optical trap of molecules. Our method, when combined with transverse laser cooling, can improve the precision of spectroscopic measurements that test fundamental physics. We compare the frequency-chirped slowing method with slowing using frequency-broadened light.

  13. Residual stress in AlN films grown on sapphire substrates by molecular beam epitaxy

    Science.gov (United States)

    Rong, Xin; Wang, Xinqiang; Chen, Guang; Pan, Jianhai; Wang, Ping; Liu, Huapeng; Xu, Fujun; Tan, Pingheng; Shen, Bo

    2016-05-01

    Residual stress in AlN films grown by molecular beam epitaxy (MBE) has been studied by Raman scattering spectroscopy. A strain-free Raman frequency and a biaxial stress coefficient for E2(high) mode are experimentally determined to be 657.8 ± 0.3 cm-1 and 2.4 ± 0.2 cm-1 / GPa, respectively. By using these parameters, the residual stress of a series of AlN layers grown under different buffer layer conditions has been investigated. The residual compressive stress is found to be obviously decreased by increasing the Al/N beam flux ratio of the buffer layer, indicating the generation of tensile stress due to stronger coalescence of AlN grains, as also confirmed by the in-situ reflection high energy electron diffraction (RHEED) monitoring observation. The stronger coalescence does lead to improved quality of AlN films as expected.

  14. Selective-area growth of GaN nanowires on SiO2-masked Si (111) substrates by molecular beam epitaxy

    Science.gov (United States)

    Kruse, J. E.; Lymperakis, L.; Eftychis, S.; Adikimenakis, A.; Doundoulakis, G.; Tsagaraki, K.; Androulidaki, M.; Olziersky, A.; Dimitrakis, P.; Ioannou-Sougleridis, V.; Normand, P.; Koukoula, T.; Kehagias, Th.; Komninou, Ph.; Konstantinidis, G.; Georgakilas, A.

    2016-06-01

    We analyze a method to selectively grow straight, vertical gallium nitride nanowires by plasma-assisted molecular beam epitaxy (MBE) at sites specified by a silicon oxide mask, which is thermally grown on silicon (111) substrates and patterned by electron-beam lithography and reactive-ion etching. The investigated method requires only one single molecular beam epitaxy MBE growth process, i.e., the SiO2 mask is formed on silicon instead of on a previously grown GaN or AlN buffer layer. We present a systematic and analytical study involving various mask patterns, characterization by scanning electron microscopy, transmission electron microscopy, and photoluminescence spectroscopy, as well as numerical simulations, to evaluate how the dimensions (window diameter and spacing) of the mask affect the distribution of the nanowires, their morphology, and alignment, as well as their photonic properties. Capabilities and limitations for this method of selective-area growth of nanowires have been identified. A window diameter less than 50 nm and a window spacing larger than 500 nm can provide single nanowire nucleation in nearly all mask windows. The results are consistent with a Ga diffusion length on the silicon dioxide surface in the order of approximately 1 μm.

  15. Plasma and Beam Production Experiments with HYBRIS, a Microwave-assisted H- Ion source

    International Nuclear Information System (INIS)

    A two-stage ion source concept had been presented a few years ago, consisting of a proven H- ion source and a 2.45-GHz Electron Cyclotron-Resonance (ECR) type ion source, here used as a plasma cathode. This paper describes the experimental development path pursued at Lawrence Berkeley National Laboratory, from the early concept to a working unit that produces plasma in both stages and creates a negative particle beam. Without cesiation applied to the second stage, the H- fraction of this beam is very low, yielding 75 micro-amperes of extracted ion beam current at best. The apparent limitations of this approach and envisaged improvements are discussed

  16. Durable Silver Mirror Coating Via Ion Assisted, Electron Beam Evaporation For Large Aperture Optics Project

    Data.gov (United States)

    National Aeronautics and Space Administration — In the Phase I research, Surface Optics Corporation (SOC) demonstrated a durable silver mirror coating based an ion assisted, thermal evaporation process. The...

  17. Molecular beams studies of the energetics and dynamics of elementary chemical reactions

    Energy Technology Data Exchange (ETDEWEB)

    Hayden, C.C.

    1982-05-01

    Quantum mechanical effects on the angular distribution of HF products from the F + H/sub 2/ reaction were studied using crossed atomic and molecular beams with a rotatable mass spectrometer detector and time-of-flight velocity analysis. Measurement of the singlet-triplet splitting of CH/sub 2/ from the recoil velocities of fragments from ketene photodissociation in a molecular beam is also reported. Partial center-of-mass angular distributions, and velocity flux contour maps have been derived for individual vibrational states of the HF product from the F + H/sub 2/ reaction at collision energies of 2 and 3 kcal/mole. The center-of-mass distributions were obtained by analysis of laboratory angular and time-of-flight measurements of the reactive scattering. The results are consistent with recent three dimensional quantum mechanical scattering calculations, which predict that resonance effects should appear in the product angular distributions in this energy range. The photofragmentation of ketene in a molecular beam was used to measure the singlet-triplet splitting in CH/sub 2/. A rare gas halide excimer laser operating at 351 nm (XeF) and 308 nm (XeCl) dissociated the ketene. Time-of-flight measurements of the fragment velocities allowed determination of the energetics of the dissociation. The /sup 1/A/sub 1/ - /sup 3/B/sub 1/ splitting in CH/sub 2/ was found to be 8.5 +- 0.8 kcal/mole. This agrees with many experimental results, but not with the value of 19.5 kcal/mole derived from recent photodetachment experiments on CH/sub 2//sup -/.

  18. Phonon-assisted tunneling and two-channel Kondo physics in molecular junctions

    International Nuclear Information System (INIS)

    The interplay between vibrational modes and Kondo physics is a fundamental aspect of transport properties of correlated molecular conductors. We present theoretical results for a single molecule in the Kondo regime connected to left and right metallic leads, creating the usual coupling to a conduction channel with left-right parity even. A center-of-mass vibrational mode introduces an additional phonon-assisted tunneling through the antisymmetric odd channel. A non-Fermi-liquid fixed point, reminiscent of the two-channel Kondo effect, appears at a critical value of the phonon-mediated coupling strength. Our numerical renormalization-group calculations for this system reveal non-Fermi-liquid behavior at low temperatures over lines of critical points. Signatures of this strongly correlated state are prominent in the thermodynamic properties and in the linear conductance.

  19. Effects of growth temperature on nonpolar a-plane InN grown by molecular beam epitaxy

    International Nuclear Information System (INIS)

    Nonpolar a-plane InN films were grown on r-plane sapphire substrate by plasma assisted molecular beam epitaxy with GaN underlayer. Effect of growth temperature on structural, morphological, and optical properties has been studied. The growth of nonpolar a-plane (1 1 -2 0) orientation was confirmed by high resolution X-ray diffraction study. The film grown at 500 C shows better crystallinity with the rocking curve FWHM 0.67 and 0.85 along [0 0 0 1] and [1 -1 0 0] directions, respectively. Scanning electron micrograph shows formation of Indium droplets at higher growth temperature. Room tem-perature absorption spectra show growth temperature dependent band gap variation from 0.74-0.81 eV, consistent with the expected Burstein-Moss effect. The rectifying behaviour of the I-V curve indicates the existence of Schottky barrier at the InN and GaN interface. (copyright 2014 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  20. Structural and electronic properties of epitaxial GaN layer grown on sapphire (0001) using laser molecular beam epitaxy

    International Nuclear Information System (INIS)

    Epitaxial GaN films were grown on sapphire (0001) substrates by an ultra-high vacuum laser assisted molecular beam epitaxy (MBE) system using GaN solid target with laser energy density of ∼3 J cm−2 at various growth conditions. The influence of growth temperature, layer thickness and growth rate on the structural properties of the GaN layers have been studied using high resolution x-ray diffraction, field emission scanning electron microscopy and scanning tunneling microscopy at room temperature. The epitaxial GaN layers grown at 700 °C exhibited good crystalline properties with a screw dislocation density of 3.1 × 108 cm−2 as calculated from the x-ray rocking curve measurements. The electronic properties such as core levels and valence band of GaN film were examined using x-ray photoelectron spectroscopy. Chemical composition of the GaN layer was determined using core level spectroscopy. (paper)

  1. Universality and geometry dependence in the class of the nonlinear molecular beam epitaxy equation

    OpenAIRE

    Carrasco, I. S. S.; Oliveira, T. J.

    2016-01-01

    We report extensive numerical simulations of growth models belonging to the nonlinear molecular beam epitaxy (nMBE) class, with flat and curved geometries. In both $d=1+1$ and $2+1$, we find that growth regime height distributions (HDs), spatial and temporal covariances are universal, but geometry-dependent, while the critical exponents are the same for flat and curved interfaces. Therefore the nMBE class does split into subclasses, as also does the Kardar-Parisi-Zhang (KPZ) class. Applying t...

  2. Perspective: Extremely fine tuning of doping enabled by combinatorial molecular-beam epitaxy

    Energy Technology Data Exchange (ETDEWEB)

    Wu, J.; Božović, I. [Brookhaven National Laboratory, Upton, New York 11973-5000 (United States)

    2015-06-01

    Chemical doping provides an effective method to control the electric properties of complex oxides. However, the state-of-art accuracy in controlling doping is limited to about 1%. This hampers elucidation of the precise doping dependences of physical properties and phenomena of interest, such as quantum phase transitions. Using the combinatorial molecular beam epitaxy, we improve the accuracy in tuning the doping level by two orders of magnitude. We illustrate this novel method by two examples: a systematic investigation of the doping dependence of interface superconductivity, and a study of the competing ground states in the vicinity of the insulator-to-superconductor transition.

  3. Structural evolution of Re (0001) thin films grown on Nb (110) surfaces by molecular beam epitaxy

    OpenAIRE

    Welander, Paul B.

    2010-01-01

    The heteroepitaxial growth of Re (0001) films on Nb (110) surfaces has been investigated. Nb/Re bilayers were grown on A-plane sapphire -- alpha-Al2O3 (11-20) -- by molecular beam epitaxy. While Re grew with a (0001) surface, the in-plane epitaxial relationship with the underlying Nb could be best described as a combination of Kurdjumov-Sachs and Nishiyama-Wassermann orientations. This relationship was true regardless of Re film thickness. However, an evolution of the surface morphology with ...

  4. Improved tunneling magnetoresistance at low temperature in manganite junctions grown by molecular beam epitaxy

    OpenAIRE

    Werner, Robert; Petrov, Alexandr Yu.; Mino, Lucero Alvarez; Kleiner, Reinhold; Koelle, Dieter; Davidson, Bruce A.

    2011-01-01

    We report resistance versus magnetic field measurements for a La0.65Sr0.35MnO3/SrTiO3/La0.65Sr0.35MnO3 tunnel junction grown by molecular-beam epitaxy, that show a large field window of extremely high tunneling magnetoresistance (TMR) at low temperature. Scanning the in-plane applied field orientation through 360^/circ, the TMR shows 4-fold symmetry, i.e. biaxial anisotropy, aligned with the crystalline axes but not the junction geometrical long axis. The TMR reaches ~ 1900% at 4K, correspond...

  5. Luminescence characterization of CdTe:In grown by molecular beam epitaxy

    Science.gov (United States)

    Bassani, F.; Tatarenko, S.; Saminadayar, K.; Bleuse, J.; Magnea, N.; Pautrat, J. L.

    1991-06-01

    We report on the incorporation of indium as a shallow donor in CdTe by molecular beam epitaxy. Using proper surface stoichiometry conditions, we demonstrate that it is possible to incorporate and activate up to 1018 cm-3 indium impurities. The doped layers have been characterized by secondary-ion mass spectroscopy, capacitance-voltage and Hall-effect measurements. Photoluminescence (PL) and resonant excitation of the PL clearly identify indium as the chemical dopant, acting as an effective mass donor with an energy of 14 meV. Incorrect stoichiometry conditions lead to a poor dopant activity and to complex centers formation.

  6. Perspective: Extremely fine tuning of doping enabled by combinatorial molecular-beam epitaxy

    Directory of Open Access Journals (Sweden)

    J. Wu

    2015-06-01

    Full Text Available Chemical doping provides an effective method to control the electric properties of complex oxides. However, the state-of-art accuracy in controlling doping is limited to about 1%. This hampers elucidation of the precise doping dependences of physical properties and phenomena of interest, such as quantum phase transitions. Using the combinatorial molecular beam epitaxy, we improve the accuracy in tuning the doping level by two orders of magnitude. We illustrate this novel method by two examples: a systematic investigation of the doping dependence of interface superconductivity, and a study of the competing ground states in the vicinity of the insulator-to-superconductor transition.

  7. Growth of GaN nanowall network on Si (111) substrate by molecular beam epitaxy

    OpenAIRE

    Zhong, Aihua; Hane, Kazuhiro

    2012-01-01

    GaN nanowall network was epitaxially grown on Si (111) substrate by molecular beam epitaxy. GaN nanowalls overlap and interlace with one another, together with large numbers of holes, forming a continuous porous GaN nanowall network. The width of the GaN nanowall can be controlled, ranging from 30 to 200 nm by adjusting the N/Ga ratio. Characterization results of a transmission electron microscope and X-ray diffraction show that the GaN nanowall is well oriented along the C axis. Strong band ...

  8. Structural Characterization and Ultraviolet Photoresponse of GaN Nanodots Grown by Molecular Beam Epitaxy

    OpenAIRE

    Kumar, Mahesh; Roul, Basanta; Bhat, Thirumaleshwara N; Rajpalke, Mohana K; Krupanidhi, SB

    2012-01-01

    The present work explores the electrical transport and UV photoresponse properties of GaN nanodots (NDs) grown by molecular beam epitaxy (MBE). Single-crystalline wurtzite structure of GaN NDs is verified by X-ray diffraction and transmission electron microscopy (TEM). The interdigitated electrode pattern was created and current-voltage (I-V) characteristics of GaN NDs were studied in a metal-semiconductor-metal configuration. Dark I-V characteristics of lateral grown GaN NDs obeyed the Frenk...

  9. GaN quantum dot density control by rf-plasma molecular beam epitaxy

    OpenAIRE

    Brown, J.; F Wu; Petroff, P. M.; J. S. Speck

    2004-01-01

    We report on the growth of GaN quantum dots and the control of their density in the Stranski-Krastanov mode on AlN (0001) by rf-plasma molecular beam epitaxy at 750 degreesC. After depositing the equivalent of 2-3 ML GaN coverage, as limited by N fluence under Ga-droplet growth conditions, excess Ga was desorbed and Stranski-Krastanov islands formed under vacuum. We present the dependence of island density as a function of GaN coverage (for two growth rates: 0.10 and 0.23 ML/s), as estimated ...

  10. Ferromagnetism in Ge1-xCrxTe epilayers grown by molecular beam epitaxy

    International Nuclear Information System (INIS)

    IV-VI ferromagnetic semiconductor Ge1-xCrxTe has been grown on BaF2 (111) by molecular beam epitaxy. The ferromagnetism was clearly established by direct magnetization and Hall measurements. The experimental correlation between the anomalous Hall resistivity ρxy and the resistivity ρxx, ρxy∝ρxx1.76, is understood from the semiclassical nature of the charge carrier dynamics, suggesting that the ferromagnetism gives rise to p-d exchange interaction. The Curie temperature increases systematically from the substrate temperature TS of 300 to 250 to 200 deg. C and with increasing the Cr composition along with each TS

  11. Reaction Mechanism of Oxygen Atoms with Unsaturated Hydrocarbons by the Crossed-Molecular-Beams Method

    Science.gov (United States)

    Buss, R. J.; Baseman, R. J.; Guozhong, H.; Lee, Y. T.

    1982-04-01

    From a series of studies of the reaction of oxygen atoms with unsaturated hydrocarbons using the crossed molecular beam method, the dominant reaction mechanisms were found to be the simple substitution reactions with oxygen atoms replacing H, Cl, Br atom or alkyl groups. Complication due to secondary reaction was avoided by carrying out experiments under single collisions and observing primary products directly. Primary products were identified by measuring the angular and velocity distributions of products at all the mass numbers which could be detected by the mass spectrometer, and from comparison of these distributions, applying the requirement of energy and momentum conservation.

  12. Defect-controlled growth of GaN nanorods on (0001)sapphire by molecular beam epitaxy

    International Nuclear Information System (INIS)

    Transmission electron microscopy is used to reveal threading defects in single crystal c-oriented GaN nanorods grown on (0001)sapphire by molecular beam epitaxy. The defects are shown to be planar faults lying on (1010) planes and bounded by opposite partial screw dislocations with Burgers vectors of 1/2. The faults nucleate, as dislocation half-loops, from points close to the GaN/(0001)sapphire interface. It is proposed that the spiral growth of the partial atomic step joining the emerging dislocations controls nanorod growth and accounts for the growth surface morphology. The significance of these defects for nanorod growth and applications is discussed

  13. Thermal stability of epitaxial Fe films grown on Si substrates by molecular beam epitaxy

    International Nuclear Information System (INIS)

    Epitaxial Fe films are grown on Si(0 0 1) and Si(1 1 1) substrates by molecular beam epitaxy at room temperature. Several samples of one Fe/Si structure are subjected to rapid thermal annealing from 100 to 500 °C. The annealing impact on the morphological, magnetic properties and interfacial heterostructures of these samples is examined by atomic force microscopy, vibrating sample magnetometer and transmission electron microscopy, respectively. The results demonstrate that the material system Fe/Si grown at room temperature exhibits an abrupt interface and is thermally stable up to a temperature of 150 °C.

  14. Investigation of InN layers grown by molecular beam epitaxy on GaN templates

    Energy Technology Data Exchange (ETDEWEB)

    Vilalta-Clemente, A.; Mutta, G.R.; Chauvat, M.P.; Morales, M.; Doualan, J.L.; Ruterana, P. [CIMAP UMR 6252 CNRS-ENSICAEN-CEA-UCBN, Caen (France); Grandal, J.; Sanchez-Garcia, M.A.; Calle, F. [ISOM y Department de Ingenieria Electronica, E.T.S.I. Telecomunicacion, Universidad Politecnica de Madrid, Ciudad Universitaria (Spain); Valcheva, E.; Kirilov, K. [Faculty of Physics, Sofia University (Bulgaria)

    2010-05-15

    An investigation of InN layers grown on GaN templates by molecular beam epitaxy (MBE) has been carried out by X-ray diffraction (XRD), Raman spectroscopy (RS) and photoluminescence (PL). A good correlation is noticed between their crystalline quality and optical properties. The best samples exhibit a PL emission between 0.6 and 0.7 eV. The surface structure was quite different from one sample to the other, pointing out to a critical role of the growth conditions, which probably need to be tightly optimized for a good reproducibility. (Abstract Copyright [2010], Wiley Periodicals, Inc.)

  15. Growth of GaN with warm ammonia by molecular beam epitaxy

    Science.gov (United States)

    Kawaharazuka, A.; Yoshizaki, T.; Ploog, K. H.; Horikoshi, Y.

    2009-03-01

    We demonstrate the growth of GaN by molecular beam epitaxy with warm ammonia as a nitrogen source. Ammonia gas is heated by the tungsten filament located at the open end of the gas-tube installed in the growth chamber. By using this simple structure, the multiple collisions of molecules within the heater, thus the generation of nitrogen molecule, can be suppressed. The crystalline quality of the grown GaN layer is significantly improved by introducing the warm ammonia. This effect can be explained by the enhancement of the two-dimensional growth due to the active nitrogen species such as radical NH2* generated by cracking ammonia molecule.

  16. Application of ellipsometry to crystal growth by organometallic molecular beam epitaxy

    Science.gov (United States)

    Aspnes, D. E.; Quinn, W. E.; Gregory, S.

    1990-06-01

    We report the first use of ellipsometry as a real-time monitor of III-V semiconductor crystal growth by molecular beam epitaxy, specifically growth of GaAs and AlGaAs from arsine, triethylgallium, and triethylaluminum sources. Our results provide new insight into the oxide desorption process and show a sensitivity of ±0.03 in compositions x>0.2 for 10 Å thickness increments of AlxGa1-xAs during initial deposition on GaAs.

  17. The growth of high-quality AlGaAs by metalorganic molecular-beam epitaxy

    Science.gov (United States)

    Hersee, S. D.; Martin, P. A.; Chin, A.; Ballingall, J. M.

    1991-07-01

    The electrical and optical properties of AlGaAs grown by metalorganic molecular-beam epitaxy using triethylaluminum, tri-isobutylaluminum, and trimethylamine-alane are compared. It is found that tri-isobutylaluminum yields the lowest residual carbon incorporation in the layers (Na - Nd = 4 × 1015 cm-3) and the highest electron and hole mobilities. Photoluminescence spectra for the higher-quality AlGaAs, grown using TiBAl, show excitonic luminescence. However, this luminescence appears to be defect related.

  18. Demonstration of molecular beam epitaxy and a semiconducting band structure for I-Mn-V compounds

    International Nuclear Information System (INIS)

    Our ab initio theory calculations predict a semiconducting band structure of I-Mn-V compounds. We demonstrate on LiMnAs that high-quality materials with group-I alkali metals in the crystal structure can be grown by molecular beam epitaxy. Optical measurements on the LiMnAs epilayers are consistent with the theoretical electronic structure. Our calculations also reproduce earlier reports of high antiferromagnetic ordering temperature and predict large, spin-orbit-coupling-induced magnetic anisotropy effects. We propose a strategy for employing antiferromagnetic semiconductors in high-temperature semiconductor spintronics.

  19. Growth of DyBa2Cu3Ox thin films by molecular beam epitaxy

    International Nuclear Information System (INIS)

    In-situ growth of superconducting DyBa2Cu3Ox thin films on single crystal SrTiO3 substrates has been investigated under molecular beam epitaxial conditions and using a dc glow discharge source to provide activated oxygen. The effect of the substrate temperature on phase formation and texture of the films has been investigated. Epitaxial films with c-axis orientation have been prepared at 700 degC. The films were found to undergo superconducting transition at ∼ 90K and exhibited a critical current density of ∼ 7x105 Amp/cm2 at 77K. (author)

  20. Demonstration of molecular beam epitaxy and a semiconducting band structure for I-Mn-V compounds

    Czech Academy of Sciences Publication Activity Database

    Jungwirth, Tomáš; Novák, Vít; Martí, X.; Cukr, Miroslav; Máca, František; Shick, Alexander; Mašek, Jan; Horodyská, P.; Němec, P.; Holý, V.; Zemek, Josef; Kužel, Petr; Němec, I.; Gallagher, B. L.; Campion, R. P.; Foxon, C. T.; Wunderlich, Joerg

    2011-01-01

    Roč. 83, č. 3 (2011), "035321-1"-"035321-6". ISSN 1098-0121 R&D Projects: GA MŠk LC510; GA AV ČR KAN400100652; GA MŠk(CZ) 7E08087 Grant ostatní: EU FP7- SemiSpinNet(XE) 215368; Seventh Framework Programme - NAMASTE(XE) 214499; ERC(XE) 268066 Institutional research plan: CEZ:AV0Z10100520; CEZ:AV0Z10100521 Keywords : antiferromagnetic semiconductors * spintronics * molecular beam epitaxy Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 3.691, year: 2011

  1. Towards precise defect control in layered oxide structures by using oxide molecular beam epitaxy

    OpenAIRE

    Federico Baiutti; Georg Christiani; Gennady Logvenov

    2014-01-01

    In this paper we present the atomic-layer-by-layer oxide molecular beam epitaxy (ALL-oxide MBE) which has been recently installed in the Max-Planck Institute for Solid State Research and we report on its present status, providing some examples that demonstrate its successful application in the synthesis of different layered oxides, with particular reference to superconducting La2CuO4 and insulator-to-metal La2−xSrxNiO4. We briefly review the ALL-oxide MBE technique and its unique capabilities...

  2. Deep electron traps in CdTe:In films grown by molecular beam epitaxy

    Energy Technology Data Exchange (ETDEWEB)

    Zakrzewski, A.K.; Dobaczewski, L.; Karczewski, G.; Wojtowicz, T.; Kossut, J. [Institute of Physics, Polish Academy of Science, Warsaw (Poland)

    1995-12-31

    N-type indium CdTe grown on n{sup +}-GaAs molecular beam epitaxy has been studied by the standard deep level transient spectroscopy and the isothermal Laplace-transform deep level transient spectroscopy. It was found that the Cd/Te flux ratio strongly influences the deep level transient spectroscopy results. The unusual temperature dependence of the electron emission rate in films grown at nearly stoichiometric conditions may point out that the observed defect is resonant with the conduction band. (author). 5 refs, 1 fig.

  3. Molecular-beam epitaxy of monolayer MoSe2: growth characteristics and domain boundary formation

    Science.gov (United States)

    Jiao, L.; Liu, H. J.; Chen, J. L.; Yi, Y.; Chen, W. G.; Cai, Y.; Wang, J. N.; Dai, X. Q.; Wang, N.; Ho, W. K.; Xie, M. H.

    2015-05-01

    Monolayer (ML) transition metal dichalcogenides (TMDs) are of great research interest due to their potential use in ultrathin electronic and optoelectronic applications. They show promise in new concept devices in spintronics and valleytronics. Here we present a growth study by molecular-beam epitaxy of ML and sub-ML MoSe2, an important member of TMDs, revealing its unique growth characteristics as well as the formation processes of domain boundary (DB) defects. A dramatic effect of growth temperature and post-growth annealing on DB formation is uncovered.

  4. Lutetium-doped EuO films grown by molecular-beam epitaxy

    OpenAIRE

    Melville, A; Mairoser, T.; Mannhart, J.; Schlom, D. G.; Schmehl, A.; Shai, D. E.; Monkman, E. J.; Harter, J. W.; Heeg, T.; Holländer, B; Schubert, J; Shen, K. M.

    2012-01-01

    The effect of lutetium doping on the structural, electronic, and magnetic properties of epitaxial EuO thin films grown by reactive molecular-beam epitaxy is experimentally investigated. The behavior of Lu-doped EuO is contrasted with doping by lanthanum and gadolinium. All three dopants are found to behave similarly despite differences in electronic configuration and ionic size. Andreev reflection measurements on Lu-doped EuO reveal a spin-polarization of 96% in the conduction band, despite n...

  5. In situ photoelectron spectroscopy of molecular-beam-epitaxy grown surfaces

    CERN Document Server

    Oshima, M; Okabayashi, J; Ono, K

    2003-01-01

    Two in situ high-resolution synchrotron radiation photoelectron spectroscopy (SRPES) systems combined with a molecular beam epitaxy (MBE) chamber for III-V compound semiconductors and a laser MBE chamber for strongly correlated oxide films, respectively, have been designed and fabricated to analyze intrinsic and surface/interface electronic structures of these unique materials. The importance of the in situ SRPES has been demonstrated by the results of 1) Si surface nanostructures, 2) GaAs surfaces/interfaces and nanostructures, 3) MnAs magnetic nanostructures, and 4) strongly-correlated La sub 1 sub - sub x Sr sub x MnO sub 3 surfaces/interfaces and superstructures.

  6. Perspective: Extremely fine tuning of doping enabled by combinatorial molecular-beam epitaxy

    International Nuclear Information System (INIS)

    Chemical doping provides an effective method to control the electric properties of complex oxides. However, the state-of-art accuracy in controlling doping is limited to about 1%. This hampers elucidation of the precise doping dependences of physical properties and phenomena of interest, such as quantum phase transitions. Using the combinatorial molecular beam epitaxy, we improve the accuracy in tuning the doping level by two orders of magnitude. We illustrate this novel method by two examples: a systematic investigation of the doping dependence of interface superconductivity, and a study of the competing ground states in the vicinity of the insulator-to-superconductor transition

  7. A modified time-of-flight method for precise determination of high speed ratios in molecular beams

    International Nuclear Information System (INIS)

    Time-of-flight (TOF) is a standard experimental technique for determining, among others, the speed ratio S (velocity spread) of a molecular beam. The speed ratio is a measure for the monochromaticity of the beam and an accurate determination of S is crucial for various applications, for example, for characterising chromatic aberrations in focussing experiments related to helium microscopy or for precise measurements of surface phonons and surface structures in molecular beam scattering experiments. For both of these applications, it is desirable to have as high a speed ratio as possible. Molecular beam TOF measurements are typically performed by chopping the beam using a rotating chopper with one or more slit openings. The TOF spectra are evaluated using a standard deconvolution method. However, for higher speed ratios, this method is very sensitive to errors related to the determination of the slit width and the beam diameter. The exact sensitivity depends on the beam diameter, the number of slits, the chopper radius, and the chopper rotation frequency. We present a modified method suitable for the evaluation of TOF measurements of high speed ratio beams. The modified method is based on a systematic variation of the chopper convolution parameters so that a set of independent measurements that can be fitted with an appropriate function are obtained. We show that with this modified method, it is possible to reduce the error by typically one order of magnitude compared to the standard method

  8. A modified time-of-flight method for precise determination of high speed ratios in molecular beams

    Energy Technology Data Exchange (ETDEWEB)

    Salvador Palau, A.; Eder, S. D., E-mail: sabrina.eder@uib.no; Kaltenbacher, T.; Samelin, B.; Holst, B. [Department of Physics and Technology, University of Bergen, Allégaten 55, 5007 Bergen (Norway); Bracco, G. [Department of Physics and Technology, University of Bergen, Allégaten 55, 5007 Bergen (Norway); CNR-IMEM, Department of Physics, University of Genova, V. Dodecaneso 33, 16146 Genova (Italy)

    2016-02-15

    Time-of-flight (TOF) is a standard experimental technique for determining, among others, the speed ratio S (velocity spread) of a molecular beam. The speed ratio is a measure for the monochromaticity of the beam and an accurate determination of S is crucial for various applications, for example, for characterising chromatic aberrations in focussing experiments related to helium microscopy or for precise measurements of surface phonons and surface structures in molecular beam scattering experiments. For both of these applications, it is desirable to have as high a speed ratio as possible. Molecular beam TOF measurements are typically performed by chopping the beam using a rotating chopper with one or more slit openings. The TOF spectra are evaluated using a standard deconvolution method. However, for higher speed ratios, this method is very sensitive to errors related to the determination of the slit width and the beam diameter. The exact sensitivity depends on the beam diameter, the number of slits, the chopper radius, and the chopper rotation frequency. We present a modified method suitable for the evaluation of TOF measurements of high speed ratio beams. The modified method is based on a systematic variation of the chopper convolution parameters so that a set of independent measurements that can be fitted with an appropriate function are obtained. We show that with this modified method, it is possible to reduce the error by typically one order of magnitude compared to the standard method.

  9. Three-dimensional ordering of cold ion beams in a storage ring: A molecular-dynamics simulation study

    International Nuclear Information System (INIS)

    Three-dimensional (3D) ordering of a charged-particle beams circulating in a storage ring is systematically studied with a molecular-dynamics simulation code. An ion beam can exhibit a 3D ordered configuration at ultralow temperature as a result of powerful 3D laser cooling. Various unique characteristics of the ordered beams, different from those of crystalline beams, are revealed in detail, such as the single-particle motion in the transverse and longitudinal directions, and the dependence of the tune depression and the Coulomb coupling constant on the operating points

  10. Three-dimensional ordering of cold ion beams in a storage ring: A molecular-dynamics simulation study

    Energy Technology Data Exchange (ETDEWEB)

    Yuri, Yosuke, E-mail: yuri.yosuke@jaea.go.jp [Takasaki Advanced Radiation Research Institute, Japan Atomic Energy Agency, 1233 Watanuki-machi Takasaki, Gunma 370-1292 Japan (Japan)

    2015-06-29

    Three-dimensional (3D) ordering of a charged-particle beams circulating in a storage ring is systematically studied with a molecular-dynamics simulation code. An ion beam can exhibit a 3D ordered configuration at ultralow temperature as a result of powerful 3D laser cooling. Various unique characteristics of the ordered beams, different from those of crystalline beams, are revealed in detail, such as the single-particle motion in the transverse and longitudinal directions, and the dependence of the tune depression and the Coulomb coupling constant on the operating points.

  11. Measuring the Density of a Molecular Cluster Injector via Visible Emission from an Electron Beam

    Energy Technology Data Exchange (ETDEWEB)

    Lundberg, D. P.; Kaita, R.; Majeski, R. M.; Stotler, D. P.

    2010-06-28

    A method to measure the density distribution of a dense hydrogen gas jet is pre- sented. A Mach 5.5 nozzle is cooled to 80K to form a flow capable of molecular cluster formation. A 250V, 10mA electron beam collides with the jet and produces Hα emission that is viewed by a fast camera. The high density of the jet, several 1016cm-3, results in substantial electron depletion, which attenuates the Hα emission. The attenuated emission measurement, combined with a simplified electron-molecule collision model, allows us to determine the molecular density profile via a simple iterative calculation.

  12. The effect of electricity on 2–fluoroaniline removal in a bioelectrochemically assisted microbial system (BEAMS)

    International Nuclear Information System (INIS)

    Highlights: • An bioelectrochemically assisted microbial system was developed for treating 2-fluoroaniline. • The system significantly increased the removal and mineralization of 2-fluoroaniline. • Suitably weak current stimulated specific catechol dioxygenase activity. • Suitably weak current have the directional effects on specific microbial communities. - Abstract: Bioelectrochemical auxiliary for treating wastewater has gained extensive attention and it is a promising technology for wastes especially refractory wastes treatment. In this study a bioelectrochemically assisted microbial system (BEAMS) was developed for 2-fluoroaniline removal in organic fluorine wastewater. The effects of electricity on 2-fluoroaniline removal performance, metabolic behavior as well as bacterial community structures were investigated. The BEAMS showed excellent performance in removing 2-fluoroaniline, the maximum biological defluorination and mineralization rates achieved being 116.07% and 43.06% higher, respectively, than the rates in the biological control. Suitable current intensity had positive effects on biological metabolism and the key enzyme for 2-fluoroaniline degrading catechol dioxygenase was stimulated, which increased the ability of the system to mineralize 2-fluoroaniline. Moreover, the current intensity had directional effects on specific microbial communities for 2-fluoroaniline degradation. These results give us a more detailed understanding of the effects of electricity on the treatment of 2-fluoroaniline contaminated wastewater and the system offers promise as a way of treating persistent organic pollutants

  13. AMORPHIZATION IN Nb-M (M=Fe, Co, Ni) BINARY METAL SYSTEMS INDUCED BY ION BEAM ASSISTED DEPOSITION (IBAD)

    Institute of Scientific and Technical Information of China (English)

    F. Pan; F. Zeng; B. Zhao

    2002-01-01

    Ion beam assisted deposition technique (IBAD) was utilized to systematically studyamorphization in binary metal systems of Nb-magnetic element, i.e., Nb-M (M=Fe,Co or Ni). The glass forming range terned as Nb fraction of Nb-Fe system was about34at.% to 56at.%, that of Nb-Co system was about 32at.% to 72at.% and that of Nb-Ni about 20at.% to 80at.%. Similar percolation patterns were found in amorphousalloy films. The fractal dimensions of the percolation patterns approach to 2, whichindicates 2-D layer growth for amorphous phases. It is regarded that the assistedAr+ ion beam duringthe deposition process plays important role for the 2-D layergrowth. Some metastable crystalline phases were obtained in these three systems byIBAD, e.g., bcc supersaturated solid solutions in Nb-Fe and Nb-Co systems, fcc andhcp phases in Nb-Co and Nb-Ni systems. The formation and competing between theamorphous and the metastable crystalline phases were determined by both the phases'thermodynamic states in binary metal systems and kinetics during IBAD process.

  14. Fabrication of single TiO2 nanotube devices with Pt interconnections using electron- and ion-beam-assisted deposition

    Science.gov (United States)

    Lee, Mingun; Cha, Dongkyu; Huang, Jie; Ha, Min-Woo; Kim, Jiyoung

    2016-06-01

    Device fabrication using nanostructured materials, such as nanotubes, requires appropriate metal interconnections between nanotubes and electrical probing pads. Here, electron-beam-assisted deposition (EBAD) and ion-beam-assisted deposition (IBAD) techniques for fabrication of Pt interconnections for single TiO2 nanotube devices are investigated. IBAD conditions were optimized to reduce the leakage current as a result of Pt spreading. The resistivity of the IBAD-Pt was about three orders of magnitude less than that of the EBAD-Pt, due to low carbon concentration and Ga doping, as indicated by X-ray photoelectron spectroscopy analysis. The total resistances of single TiO2 nanotube devices with EBAD- or IBAD-Pt interconnections were 3.82 × 1010 and 4.76 × 108 Ω, respectively. When the resistivity of a single nanotube is low, the high series resistance of EBAD-Pt cannot be ignored. IBAD is a suitable method for nanotechnology applications, such as photocatalysis and biosensors.

  15. Facility for low-temperature spin-polarized-scanning tunneling microscopy studies of magnetic/spintronic materials prepared in situ by nitride molecular beam epitaxy

    International Nuclear Information System (INIS)

    Based on the interest in, as well as exciting outlook for, nitride semiconductor based structures with regard to electronic, optoelectronic, and spintronic applications, it is compelling to investigate these systems using the powerful technique of spin-polarized scanning tunneling microscopy (STM), a technique capable of achieving magnetic resolution down to the atomic scale. However, the delicate surfaces of these materials are easily corrupted by in-air transfers, making it unfeasible to study them in stand-alone ultra-high vacuum STM facilities. Therefore, we have carried out the development of a hybrid system including a nitrogen plasma assisted molecular beam epitaxy/pulsed laser epitaxy facility for sample growth combined with a low-temperature, spin-polarized scanning tunneling microscope system. The custom-designed molecular beam epitaxy growth system supports up to eight sources, including up to seven effusion cells plus a radio frequency nitrogen plasma source, for epitaxially growing a variety of materials, such as nitride semiconductors, magnetic materials, and their hetero-structures, and also incorporating in situ reflection high energy electron diffraction. The growth system also enables integration of pulsed laser epitaxy. The STM unit has a modular design, consisting of an upper body and a lower body. The upper body contains the coarse approach mechanism and the scanner unit, while the lower body accepts molecular beam epitaxy grown samples using compression springs and sample skis. The design of the system employs two stages of vibration isolation as well as a layer of acoustic noise isolation in order to reduce noise during STM measurements. This isolation allows the system to effectively acquire STM data in a typical lab space, which during its construction had no special and highly costly elements included, (such as isolated slabs) which would lower the environmental noise. The design further enables tip exchange and tip coating without

  16. Facility for low-temperature spin-polarized-scanning tunneling microscopy studies of magnetic/spintronic materials prepared in situ by nitride molecular beam epitaxy

    Energy Technology Data Exchange (ETDEWEB)

    Lin, Wenzhi; Foley, Andrew; Alam, Khan; Wang, Kangkang; Liu, Yinghao; Chen, Tianjiao; Pak, Jeongihm; Smith, Arthur R., E-mail: smitha2@ohio.edu [Department of Physics and Astronomy, Nanoscale and Quantum Phenomena Institute, Ohio University, Athens, Ohio 45701 (United States)

    2014-04-15

    Based on the interest in, as well as exciting outlook for, nitride semiconductor based structures with regard to electronic, optoelectronic, and spintronic applications, it is compelling to investigate these systems using the powerful technique of spin-polarized scanning tunneling microscopy (STM), a technique capable of achieving magnetic resolution down to the atomic scale. However, the delicate surfaces of these materials are easily corrupted by in-air transfers, making it unfeasible to study them in stand-alone ultra-high vacuum STM facilities. Therefore, we have carried out the development of a hybrid system including a nitrogen plasma assisted molecular beam epitaxy/pulsed laser epitaxy facility for sample growth combined with a low-temperature, spin-polarized scanning tunneling microscope system. The custom-designed molecular beam epitaxy growth system supports up to eight sources, including up to seven effusion cells plus a radio frequency nitrogen plasma source, for epitaxially growing a variety of materials, such as nitride semiconductors, magnetic materials, and their hetero-structures, and also incorporating in situ reflection high energy electron diffraction. The growth system also enables integration of pulsed laser epitaxy. The STM unit has a modular design, consisting of an upper body and a lower body. The upper body contains the coarse approach mechanism and the scanner unit, while the lower body accepts molecular beam epitaxy grown samples using compression springs and sample skis. The design of the system employs two stages of vibration isolation as well as a layer of acoustic noise isolation in order to reduce noise during STM measurements. This isolation allows the system to effectively acquire STM data in a typical lab space, which during its construction had no special and highly costly elements included, (such as isolated slabs) which would lower the environmental noise. The design further enables tip exchange and tip coating without

  17. Monte Carlo study of molecular weight distribution changes induced by degradation of ion beam irradiated polymers

    International Nuclear Information System (INIS)

    In this work we study a polymeric material that degrades upon irradiation due to the energy inhomogeneously deposited by heavy ion beams. Ion beam irradiation of polymers generates rather different effects than those induced by 'classical' low ionizing particles such as electrons or gamma rays. This is due to the high electronic stopping power and the inhomogeneous distribution of deposited energy. This energy is transferred to the material within a small volume along the ion path forming the so called 'nuclear track' or 'latent track'. The track size primarily depends on the ion velocity, and it is determined by the secondary electrons (delta rays) generated along the ion trajectory. By means of Monte Carlo simulations we first obtained equilibrated polymer configurations using a coarse-grained model, and then investigated the spatially inhomogeneous chain scission process due to the passage of the ions. The number average molecular weight, weight average molecular weight and the polydispersity were calculated as a function of track radius, scission probability within the ion track and irradiation fluence. Finally we compared our results with a numerical implementation of a model for random homogeneous degradation.

  18. In situ surface/interface x-ray diffractometer for oxide molecular beam epitaxy

    International Nuclear Information System (INIS)

    In situ studies of oxide molecular beam epitaxy by synchrotron x-ray scattering has been made possible by upgrading an existing UHV/molecular beam epitaxy (MBE) six-circle diffractometer system. For oxide MBE growth, pure ozone delivery to the chamber has been made available, and several new deposition sources have been made available on a new 12 in. CF (ConFlat, a registered trademark of Varian, Inc.) flange. X-ray diffraction has been used as a major probe for film growth and structures for the system. In the original design, electron diffraction was intended for the secondary diagnostics available without the necessity of the x-ray and located at separate positions. Deposition of films was made possible at the two diagnostic positions. And, the aiming of the evaporation sources is fixed to the point between two locations. Ozone can be supplied through two separate nozzles for each location. Also two separate thickness monitors are installed. Additional features of the equipment are also presented together with the data taken during typical oxide film growth to illustrate the depth of information available via in situ x-ray techniques

  19. In situ surface/interface x-ray diffractometer for oxide molecular beam epitaxy

    Energy Technology Data Exchange (ETDEWEB)

    Lee, J. H. [Advanced Photon Source, Argonne National Laboratory, Argonne, Illinois 60439, USA; Tung, I. C. [Advanced Photon Source, Argonne National Laboratory, Argonne, Illinois 60439, USA; Department of Materials Science and Engineering, Northwestern University, Evanston, Illinois 60208, USA; Chang, S. -H. [Materials Science Division, Argonne National Laboratory, Argonne, Illinois 60439, USA; Bhattacharya, A. [Materials Science Division, Argonne National Laboratory, Argonne, Illinois 60439, USA; Fong, D. D. [Materials Science Division, Argonne National Laboratory, Argonne, Illinois 60439, USA; Freeland, J. W. [Advanced Photon Source, Argonne National Laboratory, Argonne, Illinois 60439, USA; Hong, Hawoong [Advanced Photon Source, Argonne National Laboratory, Argonne, Illinois 60439, USA

    2016-01-01

    In situ studies of oxide molecular beam epitaxy by synchrotron x-ray scattering has been made possible by upgrading an existing UHV/molecular beam epitaxy (MBE) six-circle diffractometer system. For oxide MBE growth, pure ozone delivery to the chamber has been made available, and several new deposition sources have been made available on a new 12 in. CF (ConFlat, a registered trademark of Varian, Inc.) flange. X-ray diffraction has been used as a major probe for film growth and structures for the system. In the original design, electron diffraction was intended for the secondary diagnostics available without the necessity of the x-ray and located at separate positions. Deposition of films was made possible at the two diagnostic positions. And, the aiming of the evaporation sources is fixed to the point between two locations. Ozone can be supplied through two separate nozzles for each location. Also two separate thickness monitors are installed. Additional features of the equipment are also presented together with the data taken during typical oxide film growth to illustrate the depth of information available via in situ x-ray techniques.

  20. Monte Carlo study of molecular weight distribution changes induced by degradation of ion beam irradiated polymers

    Energy Technology Data Exchange (ETDEWEB)

    Chappa, V.C., E-mail: chappa@tandar.cnea.gov.a [Gerencia de Investigacion y Aplicaciones, TANDAR-CNEA, Av. Gral. Paz 1499, B1650KNA San Martin, Buenos Aires (Argentina); CONICET (Argentina); Pastorino, C.; Grosso, M.F. dwel; Arbeitman, C.R. [Gerencia de Investigacion y Aplicaciones, TANDAR-CNEA, Av. Gral. Paz 1499, B1650KNA San Martin, Buenos Aires (Argentina); CONICET (Argentina); Mueller, M. [Institut fuer Theoretische Physik, Georg-August-Universitaet, Goettingen (Germany); Garci' a Bermudez, G. [Gerencia de Investigacion y Aplicaciones, TANDAR-CNEA, Av. Gral. Paz 1499, B1650KNA San Martin, Buenos Aires (Argentina); CONICET (Argentina); Escuela de Ciencia y Tecnologi' a, UNSAM (Argentina)

    2010-10-01

    In this work we study a polymeric material that degrades upon irradiation due to the energy inhomogeneously deposited by heavy ion beams. Ion beam irradiation of polymers generates rather different effects than those induced by 'classical' low ionizing particles such as electrons or gamma rays. This is due to the high electronic stopping power and the inhomogeneous distribution of deposited energy. This energy is transferred to the material within a small volume along the ion path forming the so called 'nuclear track' or 'latent track'. The track size primarily depends on the ion velocity, and it is determined by the secondary electrons (delta rays) generated along the ion trajectory. By means of Monte Carlo simulations we first obtained equilibrated polymer configurations using a coarse-grained model, and then investigated the spatially inhomogeneous chain scission process due to the passage of the ions. The number average molecular weight, weight average molecular weight and the polydispersity were calculated as a function of track radius, scission probability within the ion track and irradiation fluence. Finally we compared our results with a numerical implementation of a model for random homogeneous degradation.

  1. Investigation of the silicon ion density during molecular beam epitaxy growth

    CERN Document Server

    Eifler, G; Ashurov, K; Morozov, S

    2002-01-01

    Ions impinging on a surface during molecular beam epitaxy influence the growth and the properties of the growing layer, for example, suppression of dopant segregation and the generation of crystal defects. The silicon electron gun in the molecular beam epitaxy (MBE) equipment is used as a source for silicon ions. To use the effect of ion bombardment the mechanism of generation and distribution of ions was investigated. A monitoring system was developed and attached at the substrate position in the MBE growth chamber to measure the ion and electron densities towards the substrate. A negative voltage was applied to the substrate to modify the ion energy and density. Furthermore the current caused by charge carriers impinging on the substrate was measured and compared with the results of the monitoring system. The electron and ion densities were measured by varying the emission current of the e-gun achieving silicon growth rates between 0.07 and 0.45 nm/s and by changing the voltage applied to the substrate betw...

  2. In situ surface/interface x-ray diffractometer for oxide molecular beam epitaxy.

    Science.gov (United States)

    Lee, J H; Tung, I C; Chang, S-H; Bhattacharya, A; Fong, D D; Freeland, J W; Hong, Hawoong

    2016-01-01

    In situ studies of oxide molecular beam epitaxy by synchrotron x-ray scattering has been made possible by upgrading an existing UHV/molecular beam epitaxy (MBE) six-circle diffractometer system. For oxide MBE growth, pure ozone delivery to the chamber has been made available, and several new deposition sources have been made available on a new 12 in. CF (ConFlat, a registered trademark of Varian, Inc.) flange. X-ray diffraction has been used as a major probe for film growth and structures for the system. In the original design, electron diffraction was intended for the secondary diagnostics available without the necessity of the x-ray and located at separate positions. Deposition of films was made possible at the two diagnostic positions. And, the aiming of the evaporation sources is fixed to the point between two locations. Ozone can be supplied through two separate nozzles for each location. Also two separate thickness monitors are installed. Additional features of the equipment are also presented together with the data taken during typical oxide film growth to illustrate the depth of information available via in situ x-ray techniques. PMID:26827327

  3. Structural properties of thermoelectric CoSb3 skutterudite thin films prepared by molecular beam deposition

    International Nuclear Information System (INIS)

    Highlights: • Different methods were used to deposit Co–Sb thin film by molecular beam deposition. • The phase formation is strongly dependent on the Sb content of the film. • The fabrication of high-quality single phase skutterudite thin films could be shown. • The grain size of the films is very sensitive to the used deposition parameters. • It was shown, that large deposition rates support the formation of parasitic phases. - Abstract: The research field of thermoelectricity was renewed by the progress made in nanostructuring approaches and by the investigation of new material groups as skutterudites, whose most promising representative is CoSb3. In this work Co–Sb thin films with a thickness of 30 nm were deposited by molecular beam deposition at different substrate temperatures as well as on non-heated substrates followed by a post-annealing step. An extended investigation of the phase formation in dependence of deposition method and parameters, film composition, and post-treatment is given. The presented results provide different routes to achieve high quality single phase films. It was also demonstrated that the grain size of the CoSb3 thin films is very sensitive to the used deposition method and especially on the substrate temperature during deposition. A controllable grain size by changing the deposition parameters could be a key feature for the optimization of the thermoelectric properties, since especially the thermal conductivity should strongly depend on the grain size due to enhanced grain boundary scattering of phonons

  4. In situ surface/interface x-ray diffractometer for oxide molecular beam epitaxy

    Energy Technology Data Exchange (ETDEWEB)

    Lee, J. H.; Freeland, J. W.; Hong, Hawoong, E-mail: hhong@aps.anl.gov [Advanced Photon Source, Argonne National Laboratory, Argonne, Illinois 60439 (United States); Tung, I. C. [Advanced Photon Source, Argonne National Laboratory, Argonne, Illinois 60439 (United States); Department of Materials Science and Engineering, Northwestern University, Evanston, Illinois 60208 (United States); Chang, S.-H.; Bhattacharya, A.; Fong, D. D. [Materials Science Division, Argonne National Laboratory, Argonne, Illinois 60439 (United States)

    2016-01-15

    In situ studies of oxide molecular beam epitaxy by synchrotron x-ray scattering has been made possible by upgrading an existing UHV/molecular beam epitaxy (MBE) six-circle diffractometer system. For oxide MBE growth, pure ozone delivery to the chamber has been made available, and several new deposition sources have been made available on a new 12 in. CF (ConFlat, a registered trademark of Varian, Inc.) flange. X-ray diffraction has been used as a major probe for film growth and structures for the system. In the original design, electron diffraction was intended for the secondary diagnostics available without the necessity of the x-ray and located at separate positions. Deposition of films was made possible at the two diagnostic positions. And, the aiming of the evaporation sources is fixed to the point between two locations. Ozone can be supplied through two separate nozzles for each location. Also two separate thickness monitors are installed. Additional features of the equipment are also presented together with the data taken during typical oxide film growth to illustrate the depth of information available via in situ x-ray techniques.

  5. High quality YBCO superconductive thin films fabricated by laser molecular beam epitaxy

    Institute of Scientific and Technical Information of China (English)

    CHEN; Fan

    2001-01-01

    [1]Hirata,K.,Yamamoto,K.,Iijinma,J.et al.,Tunneling measurements on superconductor/insulator/superconductor junctions using single-crystal YBa2Cu3O7-x thin films,Appl.Phys.Lett.,1990,56(7):683-685.[2]Kingston,J.J.,Wellstood,F.C.,Lerch,P.et al.,Multilayer YBa2Cu3Ox-SrTiO3-YBa2Cu3Ox films for insulating crossovers,Appl.Phys.Lett.,1990,56(2):189-191.[3]Grundler,D.,Krumme,J.P.,David,B.et al.,YBa2Cu3O7 ramp-type junctions and superconducting quantum interference devices with an ultra thin barrier of NdGaO3,Appl.Phys.Lett.,1994,65(14):1841-1843.[4]Yang Guozhen,Lu Huibin,Chen Zhenghao et al.,Laser molecular beam epitaxy system and its key technologies,Science in China (in Chinese),Ser.A,1998,28(3):260-265.[5]Wang Ning,Lu Huibin,Chen,W.Z.et al.,Morphology and microstructure of BaTiO3/SrTiO3 superlattices grown on SrTiO3 by laser molecular-beam epitaxy,Appl.Phys.Lett.,1999,75(22):3464-3466.[6]Chen Li-Chyng,Particulates generated by pulsed laser ablation,in Pulsed Laser Deposition of Thin Films (eds.Chrisey,D.B.,Hulber,G.K.),New York:John Wiley & Sons,Inc.,1994,167-198.[7]Wang,H.S.,Dietsche,W.,Eissler,D.et al.,Molecular beam epitaxial growth and structure properties of DyBa2Cu3O7-y,J.Crys.Growth,1993,126:565-577.[8]Kita,R.,Hase,T.,Itti,R.et al.,Synthesis of CuO films using mass-separated,low-energy O+ ion beams,Appl.Phys.Lett.,1992,60(21):2684-2685.[9]Lu Huibin,Zhou Yueliang,Yang Guozhen et al.,Active gas source for thin film preparation,Chinese Patent (in Chinese),1996,No.ZL 96219046.2.[10]Wang Jing,Chen Fan,Zhao Tong et al.,Fabrication of high stable DC-SQUIDS with L-MBE YBCO thin films,Chinese Journal of Low Temperature Physics (in Chinese),1999,21(1):13-16.

  6. An ultra-compact, high-throughput molecular beam epitaxy growth system

    Energy Technology Data Exchange (ETDEWEB)

    Baker, A. A.; Hesjedal, T. [Clarendon Laboratory, Department of Physics, University of Oxford, Oxford OX1 3PU (United Kingdom); Diamond Light Source, Didcot OX11 0DE (United Kingdom); Braun, W., E-mail: w.braun@fkf.mpg.de, E-mail: fischer@createc.de; Rembold, S.; Fischer, A., E-mail: w.braun@fkf.mpg.de, E-mail: fischer@createc.de [CreaTec Fischer and Co. GmbH, Industriestr. 9, 74391 Erligheim (Germany); Gassler, G. [Dr. Gassler Electron Devices GmbH, List Str. 4, 89079 Ulm (Germany)

    2015-04-15

    We present a miniaturized molecular beam epitaxy (miniMBE) system with an outer diameter of 206 mm, optimized for flexible and high-throughput operation. The three-chamber system, used here for oxide growth, consists of a sample loading chamber, a storage chamber, and a growth chamber. The growth chamber is equipped with eight identical effusion cell ports with linear shutters, one larger port for either a multi-pocket electron beam evaporator or an oxygen plasma source, an integrated cryoshroud, retractable beam-flux monitor or quartz-crystal microbalance, reflection high energy electron diffraction, substrate manipulator, main shutter, and quadrupole mass spectrometer. The system can be combined with ultrahigh vacuum (UHV) end stations on synchrotron and neutron beamlines, or equivalently with other complex surface analysis systems, including low-temperature scanning probe microscopy systems. Substrate handling is compatible with most UHV surface characterization systems, as the miniMBE can accommodate standard surface science sample holders. We introduce the design of the system, and its specific capabilities and operational parameters, and we demonstrate the epitaxial thin film growth of magnetoelectric Cr{sub 2}O{sub 3} on c-plane sapphire and ferrimagnetic Fe{sub 3}O{sub 4} on MgO (001)

  7. Investigation of the silicon ion density during molecular beam epitaxy growth

    International Nuclear Information System (INIS)

    Ions impinging on a surface during molecular beam epitaxy influence the growth and the properties of the growing layer, for example, suppression of dopant segregation and the generation of crystal defects. The silicon electron gun in the molecular beam epitaxy (MBE) equipment is used as a source for silicon ions. To use the effect of ion bombardment the mechanism of generation and distribution of ions was investigated. A monitoring system was developed and attached at the substrate position in the MBE growth chamber to measure the ion and electron densities towards the substrate. A negative voltage was applied to the substrate to modify the ion energy and density. Furthermore the current caused by charge carriers impinging on the substrate was measured and compared with the results of the monitoring system. The electron and ion densities were measured by varying the emission current of the e-gun achieving silicon growth rates between 0.07 and 0.45 nm/s and by changing the voltage applied to the substrate between 0 to -1000 V. The dependencies of ion and electron densities were shown and discussed within the framework of a simple model. The charged carrier densities measured with the monitoring system enable to separate the ion part of the substrate current and show its correlation to the generation rate. Comparing the ion density on the whole substrate and in the center gives a hint to the ion beam focusing effect. The maximum ion and electron current densities obtained were 0.40 and 0.61 μA/cm2, respectively

  8. Microwave-assisted synthesis, molecular docking and antitubercular activity of 1,2,3,4-tetrahydropyrimidine-5-carbonitrile derivatives

    Czech Academy of Sciences Publication Activity Database

    Mohan, S. B.; Kumar, B. V. V. R.; Dinda, S. C.; Naik, D.; Seenivasan, S. P.; Kumar, V.; Rana, D. N.; Brahmkshatriya, Pathik

    2012-01-01

    Roč. 22, č. 24 (2012), s. 7539-7542. ISSN 0960-894X Institutional research plan: CEZ:AV0Z40550506 Keywords : antitubercular * binding interactions * luciferase reporter phage (LRP) assay * microwave-assisted * molecular docking Subject RIV: CC - Organic Chemistry Impact factor: 2.338, year: 2012

  9. Low temperature Ti-Si-C thin film deposition by ion beam assisted methods

    Science.gov (United States)

    Twardowska, Agnieszka; Rajchel, Boguslaw; Jaworska, Lucyna

    2010-11-01

    Thin, multiphase Ti-Si-C coatings were formed by IBSD or by IBAD methods on AISI 316L steel substrates in room temperature, using single Ti3SiC2 target. In those methods the TiXSiCY coatings were formed from the flux of energetic atoms and ions obtained by ion sputtering of the Ti3SiC2 compound sample. As sputtering beam the beam of Ar+ ions at energy of 15keV was applied. In the IBAD method the dynamically formed coatings were additionally bombarded by beam of Ar+ ions at energy of 15keV. The ion beams parameters were obtained by using Monte Carlo computer simulations. The morphology (SEM, TEM), chemical (EDS/EDX) and phase composition (XRD) examinations of formed coatings were provided as well as confocal Raman microspectroscopy. Analyzed coatings were relatively thin (150nm-1μm), flat and dense. XRD analysis indicated in amorphous TiSi, the traces of Ti5Si3 and other phases from Ti-Si-C system (TiSi, TiSi2,Ti3SiC2). For chemical bonds investigation, the laser beam with length of 532nm was used. Those analyses were performed in the low (LR) or in high (HR) resolution modes in room temperature and in 4000C. In the HR mode the spectral resolution was close to 2 cm-1. In Raman spectra peaks at: 152cm-1, 216cm-1, 278cm-1, 311 cm-1, 608cm-1, 691cm-1 were recorded. Nanoindentation tests were done on coated and uncoated substrates with diamond, Berkovich-type indenter. Vickers hardness HIT and reduced elastic modulus EIT were calculated using Olivier& Pharr method. HIT for coated substrates was in the range 2.7 to 5.3 GPa, EIT was 160 GPa.

  10. Low temperature Ti-Si-C thin film deposition by ion beam assisted methods

    International Nuclear Information System (INIS)

    Thin, multiphase Ti-Si-C coatings were formed by IBSD or by IBAD methods on AISI 316L steel substrates in room temperature, using single Ti3SiC2 target. In those methods the TiXSiCY coatings were formed from the flux of energetic atoms and ions obtained by ion sputtering of the Ti3SiC2 compound sample. As sputtering beam the beam of Ar+ ions at energy of 15keV was applied. In the IBAD method the dynamically formed coatings were additionally bombarded by beam of Ar+ ions at energy of 15keV. The ion beams parameters were obtained by using Monte Carlo computer simulations. The morphology (SEM, TEM), chemical (EDS/EDX) and phase composition (XRD) examinations of formed coatings were provided as well as confocal Raman microspectroscopy. Analyzed coatings were relatively thin (150nm-1μm), flat and dense. XRD analysis indicated in amorphous TiSi, the traces of Ti5Si3 and other phases from Ti-Si-C system (TiSi, TiSi2,Ti3SiC2). For chemical bonds investigation, the laser beam with length of 532nm was used. Those analyses were performed in the low (LR) or in high (HR) resolution modes in room temperature and in 400deg. C. In the HR mode the spectral resolution was close to 2 cm-1. In Raman spectra peaks at: 152cm-1, 216cm-1, 278cm-1, 311 cm-1, 608cm-1, 691cm-1 were recorded. Nanoindentation tests were done on coated and uncoated substrates with diamond, Berkovich-type indenter. Vickers hardness HIT and reduced elastic modulus EIT were calculated using Olivier and Pharr method. HIT for coated substrates was in the range 2.7 to 5.3 GPa, EIT was 160 GPa.

  11. Methods for assisting recovery of damaged brain and spinal cord and treating various diseases using arrays of x-ray microplanar beams

    Science.gov (United States)

    Dilmanian, F. Avraham; Anchel, David J.; Gaudette, Glenn; Romanelli, Pantaleo; Hainfeld, James

    2010-06-29

    A method of assisting recovery of an injury site of the central nervous system (CNS) or treating a disease includes providing a therapeutic dose of X-ray radiation to a target volume through an array of parallel microplanar beams. The dose to treat CNS injury temporarily removes regeneration inhibitors from the irradiated site. Substantially unirradiated cells surviving between beams migrate to the in-beam portion and assist recovery. The dose may be staggered in fractions over sessions using angle-variable intersecting microbeam arrays (AVIMA). Additional doses are administered by varying the orientation of the beams. The method is enhanced by injecting stem cells into the injury site. One array or the AVIMA method is applied to ablate selected cells in a target volume associated with disease for palliative or curative effect. Atrial fibrillation is treated by irradiating the atrial wall to destroy myocardial cells while continuously rotating the subject.

  12. High growth rate metal-organic molecular beam epitaxy for the fabrication of GaAs space solar cells

    Energy Technology Data Exchange (ETDEWEB)

    Freundlich, A.; Newman, F.; Monier, C.; Street, S. [University of Houston, TX (United States). Space Vacuum Epitaxy Center; Dargan, P.; Levy, M. [Riber Inc., Edison, NJ (United States)

    2000-06-01

    In this work, the epitaxial growth of GaAs photovoltaic devices using metalorganic molecular beam epitaxy (MOMBE) and chemical beam epitaxy (CBE) with growth rates in excess of 3 {mu}m/h is undertaken. The performance of these preliminary devices offer encouraging evidence for MOMBE and CBE as possible alternatives to the more common metalorganic chemical vapor deposition (MOCVD) for the production of III-V solar cells. (author)

  13. Effects of Laser Beam Width on the Diameter and Molecular Weight of Laser-Electrospun Polylactide Fiber

    OpenAIRE

    TAKASAKI, Midori; Morie, Kengo; Ohkoshi, Yutaka; Hirai, Toshihiro

    2015-01-01

    Effects of spinning conditions (laser beam width, applied voltage, and laser power) on reduction of molecular weight by thermal degradation, fiber diameter, and its evenness were investigated for the laser‐heated electrospinning process of polylactide fiber webs. Thinner fibers were obtained under the conditions of the narrower laser beam width, the lower applied voltage, and the higher laser power. Moreover, the thinner, the more uniform, and less degraded fiber can be obtained for the narro...

  14. Effect of ion-beam assisted deposition on the film stresses of TiO2 and SiO2 and stress control

    Institute of Scientific and Technical Information of China (English)

    Yu-Qiong Li; Hua-Qing Wang; Wu-Yu Wang; Zhi-Nong Yu; He-Shan Liu; Gang Jin

    2012-01-01

    Based on Hartmann-Shack sensor technique,an online thin film stress measuring system was introduced to measure the film stresses of TiO2 and SiO2,and comparison was made between the film stresses prepared respectively by the conventional process and the ion-beam assisted deposition.The effect of ion-beam assisted deposition on the film stresses of TiO2 and SiO2 was investigated in details,and the stress control methodologies using on-line adjustment and film doping were put forward.The results show that the film stress value of TiO2 prepared by ion-beam assisted deposition is 40 MPa lower than that prepared by conventional process,and the stress of TiO2 film changes gradually from tensile stress into compressive stress with increasing ion energy; while the film stress of SiO2 is a tensile stress under ion-beam assisted deposition because of the ion-beam sputtering effect,and the film refractive index decreases with increasing ion energy.A dynamic film stress control can be achieved through in-situ adjustment of the processing parameters based on the online film stress measuring technique,and the intrinsic stress of film can be effectively changed through film doping.

  15. Low temperature Ti-Si-C thin film deposition by ion beam assisted methods

    Energy Technology Data Exchange (ETDEWEB)

    Twardowska, Agnieszka; Rajchel, Boguslaw; Jaworska, Lucyna, E-mail: atwardow@up.krakow.pl

    2010-11-15

    Thin, multiphase Ti-Si-C coatings were formed by IBSD or by IBAD methods on AISI 316L steel substrates in room temperature, using single Ti{sub 3}SiC{sub 2} target. In those methods the Ti{sub X}SiC{sub Y} coatings were formed from the flux of energetic atoms and ions obtained by ion sputtering of the Ti{sub 3}SiC{sub 2} compound sample. As sputtering beam the beam of Ar{sup +} ions at energy of 15keV was applied. In the IBAD method the dynamically formed coatings were additionally bombarded by beam of Ar{sup +} ions at energy of 15keV. The ion beams parameters were obtained by using Monte Carlo computer simulations. The morphology (SEM, TEM), chemical (EDS/EDX) and phase composition (XRD) examinations of formed coatings were provided as well as confocal Raman microspectroscopy. Analyzed coatings were relatively thin (150nm-1{mu}m), flat and dense. XRD analysis indicated in amorphous TiSi, the traces of Ti{sub 5}Si{sub 3} and other phases from Ti-Si-C system (TiSi, TiSi{sub 2},Ti{sub 3}SiC{sub 2}). For chemical bonds investigation, the laser beam with length of 532nm was used. Those analyses were performed in the low (LR) or in high (HR) resolution modes in room temperature and in 400deg. C. In the HR mode the spectral resolution was close to 2 cm{sup -1}. In Raman spectra peaks at: 152cm{sup -1}, 216cm{sup -1}, 278cm{sup -1}, 311 cm{sup -1}, 608cm{sup -1}, 691cm{sup -1} were recorded. Nanoindentation tests were done on coated and uncoated substrates with diamond, Berkovich-type indenter. Vickers hardness H{sub IT} and reduced elastic modulus E{sub IT} were calculated using Olivier and Pharr method. H{sub IT} for coated substrates was in the range 2.7 to 5.3 GPa, E{sub IT} was 160 GPa.

  16. Ion-beam assisted deposition of MgO with in situ RHEED monitoring to control Bi-axial texture

    Energy Technology Data Exchange (ETDEWEB)

    Arendt, P. N. (Paul N.); Foltyn, S. R. (Stephen R.); Jia, Quanxi; DePaula, R. F. (Raymond Felix); Dowden, P. C. (Paul C.); Kung, H. (Harriett); Holesinger, T. G. (Terry G.); Stan, L. (Liliana); Emmert, L. A. (Luke A.); Peterson, E. J. (Eric J.); Groves, J. R. (James R.)

    2001-01-01

    We have studied the growth of magnesium oxide using ion-beam assisted deposition (IBAD) to achieve (100) oriented, bi-axially textured films with low mosaic spread, for film thicknesses of 10 nm on silicon substrates. We have refined the process by using reflected high-energy electron diffraction (RHEED) to monitor the growth of IBAD MgO films and found that the diffracted intensity can be used to determine (and ultimately control) final in-plane texture of the film. Here we present results on our work to develop the use of real-time RHEED monitoring to deposit well-oriented IBAD MgO films. The results have been corroborated with extensive grazing-incidence X-ray diffraction (GID). Results of these analyses have allowed us to deposit films on metallic substrates with in-plane mosaic spread less than 7{sup o}.

  17. Ferroelectric polarization and resistive switching characteristics of ion beam assisted sputter deposited BaTiO3 thin films

    Science.gov (United States)

    Silva, J. P. B.; Kamakshi, Koppole; Sekhar, K. C.; Moreira, J. Agostinho; Almeida, A.; Pereira, M.; Gomes, M. J. M.

    2016-05-01

    In this work, 150 nm thick polycrystalline BaTiO3 (BTO) films were deposited on Pt/TiO2/SiO2/Si substrate by ion beam assisted sputter deposition technique. The bias voltage dependent resistive switching (RS) and ferroelectric polarization characteristics of Au/BTO/Pt devices are investigated. The devices display the stable bipolar RS characteristics without an initial electroforming process. Fittings to current-voltage (I-V) curves suggest that low and high resistance states are governed, respectively, by filamentary model and trap controlled space charge limited conduction mechanism, where the oxygen vacancies act as traps. Presence of oxygen vacancies is evidenced from the photoluminescence spectrum. The devices also display P-V loops with remnant polarization (Pr) of 5.7 μC/cm2 and a coercive electric field (Ec) of 173.0 kV/cm. The coupling between the ferroelectric polarization and RS effect in BTO films is demonstrated.

  18. On the use of a O{sub 2}:SF{sub 6} plasma treatment on GaAs processed surfaces for molecular beam epitaxial regrowth

    Energy Technology Data Exchange (ETDEWEB)

    Desplats, O.; Gallo, P.; Doucet, J.B. [LAAS, CNRS, Universite de Toulouse, 7 avenue du Colonel Roche, F-31077 Toulouse Cedex 4 (France); Monier, G.; Bideux, L. [LASMEA, Universite de Clermont II, Campus des Cezeaux-24, Avenue des Landais, F-63177 AUBIERE Cedex (France); Jalabert, L.; Arnoult, A.; Lacoste, G. [LAAS, CNRS, Universite de Toulouse, 7 avenue du Colonel Roche, F-31077 Toulouse Cedex 4 (France); Armand, C.; Voillot, F. [INSA, Universite de Toulouse, Departement de Genie Physique, 135 avenue de Rangueil, F-31077 Toulouse Cedex 4 (France); Fontaine, C. [LAAS, CNRS, Universite de Toulouse, 7 avenue du Colonel Roche, F-31077 Toulouse Cedex 4 (France)], E-mail: fontaine@laas.fr

    2009-01-01

    Preparation of processed GaAs surface cleaning in view of molecular beam epitaxy regrowth by means of a O{sub 2}SF{sub 6} microwave plasma has been investigated. Photoemission, Auger electron spectroscopy, atomic force microscopy and secondary ion mass spectrometry have been used for characterization. The O{sub 2}SF{sub 6} plasma treatment was found to be very efficient for decontaminating the GaAs surface and leads to the formation of an oxide layer that can be taken off by a thermal or low-temperature H-plasma-assisted deoxidation. The levels of oxygen and carbon contaminants at the regrowth interface were measured to be in the range of a standard homoepitaxial layer-epiready substrate interface. Fluorine was observed to be eliminated upon deoxidation while sulphur is present, particularly in the case of low temperature grown layers. This plasma treatment was found to be efficient for preparation of processed GaAs surfaces for molecular beam epitaxial regrowth.

  19. Patterned growth of InGaN/GaN quantum wells on freestanding GaN grating by molecular beam epitaxy

    Directory of Open Access Journals (Sweden)

    Wang Yongjin

    2011-01-01

    Full Text Available Abstract We report here the epitaxial growth of InGaN/GaN quantum wells on freestanding GaN gratings by molecular beam epitaxy (MBE. Various GaN gratings are defined by electron beam lithography and realized on GaN-on-silicon substrate by fast atom beam etching. Silicon substrate beneath GaN grating region is removed from the backside to form freestanding GaN gratings, and the patterned growth is subsequently performed on the prepared GaN template by MBE. The selective growth takes place with the assistance of nanoscale GaN gratings and depends on the grating period P and the grating width W. Importantly, coalescences between two side facets are realized to generate epitaxial gratings with triangular section. Thin epitaxial gratings produce the promising photoluminescence performance. This work provides a feasible way for further GaN-based integrated optics devices by a combination of GaN micromachining and epitaxial growth on a GaN-on-silicon substrate. PACS 81.05.Ea; 81.65.Cf; 81.15.Hi.

  20. Study of structural properties of cubic InN films on GaAs(001) substrates by molecular beam epitaxy and migration enhanced epitaxy

    International Nuclear Information System (INIS)

    InN epitaxial films with cubic phase were grown by rf-plasma-assisted molecular beam epitaxy (RF-MBE) on GaAs(001) substrates employing two methods: migration-enhanced epitaxy (MEE) and conventional MBE technique. The films were synthesized at different growth temperatures ranging from 490 to 550 °C, and different In beam fluxes (BEPIn) ranging from 5.9 × 10−7 to 9.7 × 10−7 Torr. We found the optimum conditions for the nucleation of the cubic phase of the InN using a buffer composed of several thin layers, according to reflection high-energy electron diffraction (RHEED) patterns. Crystallographic analysis by high resolution X-ray diffraction (HR-XRD) and RHEED confirmed the growth of c-InN by the two methods. We achieved with the MEE method a higher crystal quality and higher cubic phase purity. The ratio of cubic to hexagonal components in InN films was estimated from the ratio of the integrated X-ray diffraction intensities of the cubic (002) and hexagonal (1011) planes measured by X-ray reciprocal space mapping (RSM). For MEE samples, the cubic phase of InN increases employing higher In beam fluxes and higher growth temperatures. We have obtained a cubic purity phase of 96.4% for a film grown at 510 °C by MEE.

  1. Molecularly imprinted polymers with assistant recognition polymer chains for bovine serum albumin

    Institute of Scientific and Technical Information of China (English)

    2010-01-01

    A new protein molecularly imprinted polymer (MIP) was prepared with grafting polyvinyl alcohol as assistant recognition polymer chains (ARPCs). The ARPCs and acrylamide monomers were interpenetrated and then polymerized on the surface of macroporous acrylate adsorbent spheres. The template BSA was removed by treatment with 2.00 mol L-1 potassium chloride (KCl) solution and the adsorbed proteins were detected with sodium dodecyl sulfate-polyacrylamide gel electrophoresis (SDS-PAGE). 0.150, 0.500, and 2.00 mol L-1 KCl solutions were used as eluent to wash the adsorbed proteins. The SDS-PAGE results show that proteins washed out with 2.00 mol L-1KCl solution were from nonspecific adsorption of macroporous acrylate adsorbent spheres, and proteins washed out with 0.500 mol L-1KC1 solution were specific proteins imprinted by MIP resins. MIP resins with ARPCs had better recognition to the target proteins than that without ARPCs. The adsorption capacity of MIP resins immobilized ARPCs to the template BSA was about 80-100 μg g-1 when it was used for the adsorption of proteins mixture, and the specific adsorption of the target protein was obviously increased.

  2. Ge/GeSn heterostructures grown on Si (100) by molecular-beam epitaxy

    International Nuclear Information System (INIS)

    The growth of GeSn layers by molecular-beam epitaxy on Si (100) wafers coated with a germanium buffer layer is investigated. The properties of the fabricated structures are controlled by reflection high-energy electron diffraction, atomic-force microscopy, X-ray diffractometry, Rutherford backscattering, and Raman scattering. It is shown that GeSn layers with thicknesses up to 0.5 μm and Sn molar fractions up to 0.073 manifest no sign of plastic relaxation upon epitaxy. The lattice constant of the GeSn layers within the growth plane is precisely the same as that of Ge. The effect of rapid thermal annealing on the conversion of metastable elastically strained GeSn layers into a plastically relaxed state is examined. Ge/GeSn quantum wells with Sn molar fraction up to 0.11 are obtained

  3. Molecular-Beam Epitaxially Grown MgB2 Thin Films and Superconducting Tunnel Junctions

    International Nuclear Information System (INIS)

    Since the discovery of its superconducting properties in 2001, magnesium diboride has generated terrific scientific and engineering research interest around the world. With a TC of 39K and two superconducting gaps, MgB2 has great promise from the fundamental point of view, as well as immediate applications. Several techniques for thin film deposition and heterojunction formation have been established, each with its own advantages and drawbacks. Here, we will present a brief overview of research based on MgB2 thin films grown by molecular beam epitaxy coevaporation of Mg and B. The films are smooth and highly crystalline, and the technique allows for virtually any heterostructure to be formed, including all-MgB2 tunnel junctions. Such devices have been characterized, with both quasiparticle and Josephson tunneling reported. MgB2 remains a material of great potential for a multitude of further characterization and exploration research projects and applications.

  4. Improved tunneling magnetoresistance at low temperature in manganite junctions grown by molecular beam epitaxy

    International Nuclear Information System (INIS)

    We report resistance versus magnetic field measurements for a La0.65Sr0.35MnO3/SrTiO3/La0.65Sr0.35MnO3 tunnel junction grown by molecular-beam epitaxy, that show a large field window of extremely high tunneling magnetoresistance (TMR) at low temperature. Scanning the in-plane applied field orientation through 360 deg., the TMR shows fourfold symmetry, i.e., biaxial anisotropy, aligned with the crystalline axis but not the junction geometrical long axis. The TMR reaches ∼1900% at 4 K, corresponding to an interfacial spin polarization of >95% assuming identical interfaces. These results show that uniaxial anisotropy is not necessary for large TMR, and lay the groundwork for future improvements in TMR in manganite junctions.

  5. GaN grown on (1 1 1) single crystal diamond substrate by molecular beam epitaxy

    Science.gov (United States)

    Dussaigne, A.; Malinverni, M.; Martin, D.; Castiglia, A.; Grandjean, N.

    2009-10-01

    GaN epilayers are grown on (1 1 1) oriented single crystal diamond substrate by ammonia-source molecular beam epitaxy. Each step of the growth is monitored in situ by reflection high energy electron diffraction. It is found that a two-dimensional epitaxial wurtzite GaN film is obtained. The surface morphology is smooth: the rms roughness is as low as 1.3 nm for 2×2 μm 2 scan. Photoluminescence measurements reveal pretty good optical properties. The GaN band edge is centred at 3.469 eV with a linewidth of 5 meV. These results demonstrate that GaN heteroepitaxially grown on diamond opens new rooms for high power electronic applications.

  6. ELM mitigation by means of supersonic molecular beam and pellet injection on the EAST superconducting tokamak

    Energy Technology Data Exchange (ETDEWEB)

    Hu, J.S., E-mail: hujs@ipp.ac.cn [Institute of Plasma Physics, Chinese Academy of Sciences, P.O. Box 1126, Hefei 230031 (China); Sun, Z.; Li, C.Z.; Zhen, X.W.; Li, J.G.; Guo, H.Y.; Li, J.H.; Wang, L.; Gan, K.F.; Chen, Y.; Ren, J.; Zuo, G.Z.; Yao, X.J.; Hu, L.Q.; Gong, X.Z.; Wan, B.N. [Institute of Plasma Physics, Chinese Academy of Sciences, P.O. Box 1126, Hefei 230031 (China); Zou, X.L. [CEA, IRFM, F-13108 Saint-Paul-lez-Durance (France); Mansfield, D.K. [Princeton Plasma Physics Laboratory, Princeton, NJ 08543 (United States); Liang, Y.F. [Forschungszentrum Jülich GmbH, Association EURATOM-FZ Jülich (Germany); Vinyar, I. [PELIN LLC, Saint Petersburg (Russian Federation)

    2015-08-15

    In this paper, we will present experimental results from EAST on the mitigation of edge localized modes (ELMs) using recently developed deuterium/lithium pellet injections as well as supersonic molecular beam injections (SMBI). Using a Laval nozzle, ELM mitigation with SMBI has been demonstrated in EAST in quasi-steady state. Using a D{sub 2} pellet injector, a giant ELM appears followed by a burst of high frequency ELMs at ∼300 Hz with duration of a few tens of milliseconds. Furthermore, for the first time, a novel technology using a simple rotating impeller to inject sub-millimeter size lithium (Li) granules at speeds of a few tens of meters per second was successfully used to pace ELMs. These experiments indicate that, on EAST, several technologies can contribute to the database supporting ELMs control in future fusion devices, such as ITER.

  7. High-mobility BaSnO3 grown by oxide molecular beam epitaxy

    Directory of Open Access Journals (Sweden)

    Santosh Raghavan

    2016-01-01

    Full Text Available High-mobility perovskite BaSnO3 films are of significant interest as new wide bandgap semiconductors for power electronics, transparent conductors, and as high mobility channels for epitaxial integration with functional perovskites. Despite promising results for single crystals, high-mobility BaSnO3 films have been challenging to grow. Here, we demonstrate a modified oxide molecular beam epitaxy (MBE approach, which supplies pre-oxidized SnOx. This technique addresses issues in the MBE of ternary stannates related to volatile SnO formation and enables growth of epitaxial, stoichiometric BaSnO3. We demonstrate room temperature electron mobilities of 150 cm2 V−1 s−1 in films grown on PrScO3. The results open up a wide range of opportunities for future electronic devices.

  8. Chemical intermediate detection following corona discharge on volatile organic compounds: general method using molecular beam techniques

    International Nuclear Information System (INIS)

    Nonthermal plasma (NTP)-based treatments of volatile organic compounds (VOCs) have potential for effective environmental remediation. Theory and experiment that consider the basic science pertaining to discharge events have helped improve NTP remediation outcomes. If direct information on early post-discharge chemical intermediates were also available, it would likely lead to additional improvement in NTP remediation outcomes. To this point, however, experiments yielding direct information on post-NTP VOC intermediates have been limited. An approach using supersonic expansion molecular beam methods offers general promise for detection of post-discharge VOC intermediates. To illustrate the potential utility of these methods, we present mass spectra showing the growth of early products formed when pulsed corona discharges were carried out on toluene in He and then in He with added O2. Good general detection of neutral post-discharge species was obtained using 800 nm 150 fs photoionization pulses.

  9. Reduction in the crystal defect density of Zn Se layers grown by molecular beam epitaxy

    International Nuclear Information System (INIS)

    We present a study of the molecular beam epitaxial (MBE) grown of Zn Se layers on Ga-As and Si substrates. For the growth on GaAs substrates we investigated the effects of introducing buffer layers of AlxGa1-x As and InxGa1-x As with x = 0.01. Moreover, an analysis by secondary ion mass spectroscopy revealed that the use of AlGaAs buffer layers effectively suppress the Ga segregation onto the Zn Se layers surface. On the other hand, for the growth of Zn Se on Si substrates, we achieved a significant improvement in the crystal quality of Zn Se by irradiating the Si substrates with plasma of nitrogen prior to the growth. (Author)

  10. Real-time reflectance-difference spectroscopy of GaAs molecular beam epitaxy homoepitaxial growth

    International Nuclear Information System (INIS)

    We report on real time-resolved Reflectance-difference (RD) spectroscopy of GaAs(001) grown by molecular beam epitaxy, with a time-resolution of 500 ms per spectrum within the 2.3–4.0 eV photon energy range. Through the analysis of transient RD spectra we demonstrated that RD line shapes are comprised of two components with different physical origins and determined their evolution during growth. Such components were ascribed to the subsurface strain induced by surface reconstruction and to surface stoichiometry. Results reported in this paper render RD spectroscopy as a powerful tool for the study of fundamental processes during the epitaxial growth of zincblende semiconductors

  11. Reduction in the crystal defect density of Zn Se layers grown by molecular beam epitaxy

    Energy Technology Data Exchange (ETDEWEB)

    Lopez L, M.; Perez C, A.; Luyo A, J.; Melendez L, M.; Tamura, M. [Departamento de Fisica, Centro de Investigacion y de Estudios Avanzados del instituto politecnico Nacional, A.P. 14-740, 07000 Mexico D.F. (Mexico); Mendez G, V.H.; Vidal, M.A. [Instituto de Investigacion en Comunicacion Optica, Universidad Autonoma de San Luis Potosi, Alvaro Obregon 64, 78000 San Luis Potosi (Mexico)

    2000-07-01

    We present a study of the molecular beam epitaxial (MBE) grown of Zn Se layers on Ga-As and Si substrates. For the growth on GaAs substrates we investigated the effects of introducing buffer layers of Al{sub x}Ga{sub 1-x} As and In{sub x}Ga{sub 1-x} As with x = 0.01. Moreover, an analysis by secondary ion mass spectroscopy revealed that the use of AlGaAs buffer layers effectively suppress the Ga segregation onto the Zn Se layers surface. On the other hand, for the growth of Zn Se on Si substrates, we achieved a significant improvement in the crystal quality of Zn Se by irradiating the Si substrates with plasma of nitrogen prior to the growth. (Author)

  12. High electron mobility in Ga(In)NAs films grown by molecular beam epitaxy

    International Nuclear Information System (INIS)

    We report the highest mobility values above 2000 cm2/Vs in Si doped GaNAs film grown by molecular beam epitaxy. To understand the feature of the origin which limits the electron mobility in GaNAs, temperature dependences of mobility were measured for high mobility GaNAs and referential low mobility GaInNAs. Temperature dependent mobility for high mobility GaNAs is similar to the GaAs case, while that for low mobility GaInNAs shows large decrease in lower temperature region. The electron mobility of high quality GaNAs can be explained by intrinsic limiting factor of random alloy scattering and extrinsic factor of ionized impurity scattering.

  13. High-mobility BaSnO3 grown by oxide molecular beam epitaxy

    International Nuclear Information System (INIS)

    High-mobility perovskite BaSnO3 films are of significant interest as new wide bandgap semiconductors for power electronics, transparent conductors, and as high mobility channels for epitaxial integration with functional perovskites. Despite promising results for single crystals, high-mobility BaSnO3 films have been challenging to grow. Here, we demonstrate a modified oxide molecular beam epitaxy (MBE) approach, which supplies pre-oxidized SnOx. This technique addresses issues in the MBE of ternary stannates related to volatile SnO formation and enables growth of epitaxial, stoichiometric BaSnO3. We demonstrate room temperature electron mobilities of 150 cm2 V−1 s−1 in films grown on PrScO3. The results open up a wide range of opportunities for future electronic devices

  14. Surface energies for molecular beam epitaxy growth of HgTe and CdTe

    Science.gov (United States)

    Berding, M. A.; Krishnamurthy, Srinivasan; Sher, A.

    1991-10-01

    We present results for the surface binding energies for HgTe and CdTe that will serve as input for molecular beam epitaxy growth models. We have found that the surface binding energies are surface orientation dependent and are not simply proportional to the number of first-neighbor bonds being made to the underlying layer. Moreover, because of the possibility of charge transfer between cation and anion surface states, one may have large differences between the binding energy for the first and the last atom in a given layer, and these differences will be different for the narrow-gap, less ionic materials than for the wide gap, ionic materials. We also find that the surface states associated with an isolated surface atom or vacancy are extended in materials with small gaps and small effective masses, and thus call into question the modeling of surface binding by simple pair interactions.

  15. Molecular-beam studies of the dynamics of organic electron transfer reactions

    International Nuclear Information System (INIS)

    Using crossed molecular beams we have studied the dynamics of several electron transfer reactions, A+B→A++B-, where A is an organic base and B is SnCl4, SbF5, or TiCl4. We propose a simple, modified stripping model whereby the electron jumps at the point where the ionic and covalent surfaces cross to form a pair of ions produced by a vertical, Franck--Condon transition. All initial energy in excess of this vertical threshold appears in the translational energy of the products. This model is verified in one case where the vertical ionization potential and electron affinity are known and is then used to obtain a rough vertical electron affinity of SbF5. Except at the lowest energies all the reactions follow this modified stripping mechanism

  16. Characterisation of multiple carrier transport in indium nitride grown by molecular beam epitaxy

    International Nuclear Information System (INIS)

    Quantitative mobility spectrum analysis (QMSA) was performed on multiple magnetic field Hall effect measurements of indium nitride grown by molecular beam epitaxy. This enables two clearly distinct electron species to be identified, which are attributed to the bulk and a surface accumulation layer. In this material, single magnetic field data corresponds to neither electron species, as both contribute significantly to the total conduction. The bulk electron distribution has an extracted average Hall mobility of 3570 cm2/(Vs) at 300 K with a concentration of 1.5 x 1017 cm-3, while the surface electrons have sheet charge density that is an order of magnitude higher than previously reported surface concentrations. The high quality bulk characteristics revealed emphasise the importance of using multi-carrier analysis when performing transport measurements on InN. (Abstract Copyright [2007], Wiley Periodicals, Inc.)

  17. InAs/GaAs(001) molecular beam epitaxial growth in a scanning tunnelling microscope

    International Nuclear Information System (INIS)

    The growth on InAs on GaAs(001) has attracted great interest and investigation over the past few decades primarily due to the opto-electronic properties of the self-assembled quantum dot (QD) arrays formed. Scanning tunnelling microscopy (STM) has been extensively employed to investigate the complicated and spontaneous mechanism of QD growth via molecular beam epitaxy (MBE). Classically, combined MBE-STM requires quenching the sample after growth and transferring it to an arsenic-free high vacuum chamber which houses the STM system. However, without access to the phenomenon as a dynamic process a basic understanding remains elusive. In order to access surface dynamics, MBE and STM must be combined into a single element. The system herein discussed allows the operation of MBE sources in an STM system relating to InAs/GaAs(001) surfaces.

  18. Accommodation mechanism of InN nanocolumns grown on Si(111) substrates by molecular beam epitaxy

    International Nuclear Information System (INIS)

    High quality InN nanocolumns have been grown by molecular beam epitaxy on bare and AlN-buffered Si(111) substrates. The accommodation mechanism of the InN nanocolumns to the substrate was studied by transmission electron microscopy. Samples grown on AlN-buffered Si(111) show abrupt interfaces between the nanocolumns and the buffer layer, where an array of periodically spaced misfit dislocations develops. Samples grown on bare Si(111) exhibit a thin SixNy at the InN nanocolumn/substrate interface because of Si nitridation. The SixNy thickness and roughness may affect the nanocolumn relative alignment to the substrate. In all cases, InN nanocolumns grow strain- and defect-free

  19. Molecular beam epitaxy growth and magnetic properties of Cr-Co-Ga Heusler alloy films

    International Nuclear Information System (INIS)

    We have re-investigated growth and magnetic properties of Cr2CoGa films using molecular beam epitaxy technique. Phase separation and precipitate formation were observed experimentally again in agreement with observation of multiple phases separation in sputtered Cr2CoGa films by M. Meinert et al. However, significant phase separation could be suppressed by proper control of growth conditions. We showed that Cr2CoGa Heusler phase, rather than Co2CrGa phase, constitutes the majority of the sample grown on GaAs(001) at 450 oC. The measured small spin moment of Cr2CoGa is in agreement with predicted HM-FCF nature; however, its Curie temperature is not as high as expected from the theoretical prediction probably due to the off-stoichiometry of Cr2CoGa and the existence of the disorders and phase separation

  20. High breakdown single-crystal GaN p-n diodes by molecular beam epitaxy

    International Nuclear Information System (INIS)

    Molecular beam epitaxy grown GaN p-n vertical diodes are demonstrated on single-crystal GaN substrates. A low leakage current <3 nA/cm2 is obtained with reverse bias voltage up to −20 V. With a 400 nm thick n-drift region, an on-resistance of 0.23 mΩ cm2 is achieved, with a breakdown voltage corresponding to a peak electric field of ∼3.1 MV/cm in GaN. Single-crystal GaN substrates with very low dislocation densities enable the low leakage current and the high breakdown field in the diodes, showing significant potential for MBE growth to attain near-intrinsic performance when the density of dislocations is low

  1. Photoluminescence characteristics of Pb-doped, molecular-beam-epitaxy grown ZnSe crystal layers

    International Nuclear Information System (INIS)

    The characteristic green photoluminescence emission and related phenomena in Pb-doped, molecular-beam-epitaxy (MBE)-grown ZnSe crystal layers were investigated to explore the nature of the center responsible for the green emission. The intensity of the green emission showed a distinct nonlinear dependence on excitation intensity. Pb-diffused polycrystalline ZnSe was similarly examined for comparison. The characteristic green emission has been observed only in MBE-grown ZnSe crystal layers with moderate Pb doping. The results of the investigations on the growth conditions, luminescence, and related properties of the ZnSe crystal layers suggest that the green emission is due to isolated Pb replacing Zn and surrounded with regular ZnSe lattice with a high perfection

  2. Growth of semiconductor alloy InGaPBi on InP by molecular beam epitaxy

    International Nuclear Information System (INIS)

    We report the first successful growth of InGaPBi single crystals on InP substrate with Bi concentration far beyond the doping level by gas source molecular beam epitaxy. The InGaPBi thin films reveal excellent surface and structural qualities, making it a promising new III–V compound family member for heterostructures. The strain can be tuned between tensile and compressive by adjusting Ga and Bi compositions. The maximum achieved Bi concentration is 2.2 ± 0.4% confirmed by Rutherford backscattering spectroscopy. Room temperature photoluminescence shows strong and broad light emission at energy levels much smaller than the InP bandgap. (paper)

  3. Antimony segregation in stressed SiGe heterostructures grown by molecular beam epitaxy

    International Nuclear Information System (INIS)

    The effects of the growth temperature, composition, and elastic strains in separate layers on the segregation of antimony are studied experimentally for stressed SiGe structures grown by molecular beam epitaxy. It is established that the growth conditions and parameters of the structures exert an interrelated influence on the segregation of Sb: the degree of the influence of the composition and elastic stresses in the SiGe layers on Sb segregation depends on the growth temperature. It is shown that usage of a method previously proposed by us for the selective doping of silicon structures with consideration for the obtained dependences of Sb segregation on the growth conditions and parameters of the SiGe layers makes it possible to form SiGe structures selectively doped with antimony

  4. Molecular beam mass spectrometric sampling of minor species from coal dust-air flames

    International Nuclear Information System (INIS)

    It has been demonstrated that unaugmented, unconfined, premixed coal dust-air flames can be stabilized on small conical or flat, Meeker type burners. Since these flames are laminar, they can be used to study the kinetics of various processes in coal combustion and related areas such as understanding mechanisms of fireside corrosion and of flame and explosive inhibition. Some of the current work with these flames is directed toward identification and measurement of minor alkali metal and other species responsible for fireside corrosion. In order to make these measurements, molecular beam mass spectrometric sampling techniques have been adpated for use with these heterogeneous flames. In this paper, the equipment and techniques used are reviewed and some preliminary results presented

  5. Fe-doped InN layers grown by molecular beam epitaxy

    International Nuclear Information System (INIS)

    Iron(Fe)-doped InN (InN:Fe) layers have been grown by molecular beam epitaxy. It is found that Fe-doping leads to drastic increase of residual electron concentration, which is different from the semi-insulating property of Fe-doped GaN. However, this heavy n-type doping cannot be fully explained by doped Fe-concentration ([Fe]). Further analysis shows that more unintentionally doped impurities such as hydrogen and oxygen are incorporated with increasing [Fe] and the surface is degraded with high density pits, which probably are the main reasons for electron generation and mobility reduction. Photoluminescence of InN is gradually quenched by Fe-doping. This work shows that Fe-doping is one of good choices to control electron density in InN.

  6. SIMS studies of CI- doped Zn Se epilayers grown by molecular beam epitaxy

    International Nuclear Information System (INIS)

    Chlorine is one of the most used species to produce n-type zinc selenium epilayers. In this paper, we present secondary ion mass spectrometry profiles of a series of chlorine-doped zinc selenium samples, which were grown in a molecular beam epitaxy chamber. These profiles have been used to examine the limitation of secondary ion mass spectrometry analysis of narrow chlorine-delta layers. In order to covert secondary ion mass spectrometry raw data to quantified data, the depth profile from a chlorine-implanted standard sample has been used to estimate the useful ion yieldof chlorine and thus the instrument sensitivity for chlorine in a zinc selenium matrix. The useful ion yieldand detection limit of chlorine in the zinc selenium host matrix were calculated to be 4.7 X 10-17 atoms/ cm3, respectively

  7. Design and growth of a P N diode by molecular beam epitaxy

    International Nuclear Information System (INIS)

    In this work, design, growth and characterization of a GaAs p-n contact is presented. The contact growth has been performed by Molecular Beam Epitaxy. The n layer with thickness of 1μm and electron concentration of 6 * 1017 cm-3 has been grown on a p-type GaAs substrate with hole concentration of 1 * 1017cm-3. During growth, in situ monitoring of the layer stoichiometry has been made possible by using Reflection High Energy Electron Diffraction technique. After growth characterization was performed by the use of Hall-effect measurement, the results for the carrier concentration was further confirmed by Electrochemical Capacitance-Voltage profiling technique

  8. Growth of high quality AlGaAs by metalorganic molecular beam epitaxy using trimethylamine alane

    Science.gov (United States)

    Abernathy, C. R.; Jordan, A. S.; Pearton, S. J.; Hobson, W. S.; Bohling, D. A.; Muhr, G. T.

    1990-06-01

    AlGaAs grown by metalorganic molecular beam epitaxy (MOMBE) has been problematic due to oxygen and carbon contamination, particularly when triethylaluminum (TEAl) has been used as the aluminum source. Consequently, we have investigated trimethylamine alane (TMAAl) as a potential replacement for the conventional metalorganic Al sources. AlGaAs films with excellent structural and optical properties have been grown with this source. Photoluminescence intensities from AlGaAs grown by MOMBE at 500 °C using TMAAl are comparable to those from material grown by metalorganic chemical vapor deposition at 675 °C using triethylaluminum (TMAl). Carbon and oxygen levels in MOMBE-grown AlGaAs are drastically reduced in comparison to similar films grown with TEAl.

  9. Investigation of Localized States in GaAsSb Epilayers Grown by Molecular Beam Epitaxy

    Science.gov (United States)

    Gao, Xian; Wei, Zhipeng; Zhao, Fenghuan; Yang, Yahui; Chen, Rui; Fang, Xuan; Tang, Jilong; Fang, Dan; Wang, Dengkui; Li, Ruixue; Ge, Xiaotian; Ma, Xiaohui; Wang, Xiaohua

    2016-01-01

    We report the carrier dynamics in GaAsSb ternary alloy grown by molecular beam epitaxy through comprehensive spectroscopic characterization over a wide temperature range. A detailed analysis of the experimental data reveals a complex carrier relaxation process involving both localized and delocalized states. At low temperature, the localized degree shows linear relationship with the increase of Sb component. The existence of localized states is also confirmed by the temperature dependence of peak position and band width of the emission. At temperature higher than 60 K, emissions related to localized states are quenched while the band to band transition dominates the whole spectrum. This study indicates that the localized states are related to the Sb component in the GaAsSb alloy, while it leads to the poor crystal quality of the material, and the application of GaAsSb alloy would be limited by this deterioration. PMID:27381641

  10. High breakdown single-crystal GaN p-n diodes by molecular beam epitaxy

    Energy Technology Data Exchange (ETDEWEB)

    Qi, Meng; Zhao, Yuning; Yan, Xiaodong; Li, Guowang; Verma, Jai; Fay, Patrick [Department of Electrical Engineering, University of Notre Dame, Notre Dame, Indiana 46556 (United States); Nomoto, Kazuki; Zhu, Mingda; Hu, Zongyang; Protasenko, Vladimir; Song, Bo; Xing, Huili Grace; Jena, Debdeep, E-mail: djena@cornell.edu [Department of Electrical Engineering, University of Notre Dame, Notre Dame, Indiana 46556 (United States); Departments of ECE and MSE, Cornell University, Ithaca, New York 14853 (United States); Bader, Samuel [Departments of ECE and MSE, Cornell University, Ithaca, New York 14853 (United States)

    2015-12-07

    Molecular beam epitaxy grown GaN p-n vertical diodes are demonstrated on single-crystal GaN substrates. A low leakage current <3 nA/cm{sup 2} is obtained with reverse bias voltage up to −20 V. With a 400 nm thick n-drift region, an on-resistance of 0.23 mΩ cm{sup 2} is achieved, with a breakdown voltage corresponding to a peak electric field of ∼3.1 MV/cm in GaN. Single-crystal GaN substrates with very low dislocation densities enable the low leakage current and the high breakdown field in the diodes, showing significant potential for MBE growth to attain near-intrinsic performance when the density of dislocations is low.

  11. High-mobility BaSnO{sub 3} grown by oxide molecular beam epitaxy

    Energy Technology Data Exchange (ETDEWEB)

    Raghavan, Santosh; Schumann, Timo; Kim, Honggyu; Zhang, Jack Y.; Cain, Tyler A.; Stemmer, Susanne, E-mail: stemmer@mrl.ucsb.edu [Materials Department, University of California, Santa Barbara, California 93106-5050 (United States)

    2016-01-01

    High-mobility perovskite BaSnO{sub 3} films are of significant interest as new wide bandgap semiconductors for power electronics, transparent conductors, and as high mobility channels for epitaxial integration with functional perovskites. Despite promising results for single crystals, high-mobility BaSnO{sub 3} films have been challenging to grow. Here, we demonstrate a modified oxide molecular beam epitaxy (MBE) approach, which supplies pre-oxidized SnO{sub x}. This technique addresses issues in the MBE of ternary stannates related to volatile SnO formation and enables growth of epitaxial, stoichiometric BaSnO{sub 3}. We demonstrate room temperature electron mobilities of 150 cm{sup 2} V{sup −1} s{sup −1} in films grown on PrScO{sub 3}. The results open up a wide range of opportunities for future electronic devices.

  12. Effects of substrate orientation on the growth of InSb nanostructures by molecular beam epitaxy

    Science.gov (United States)

    Chou, C. Y.; Torfi, A.; Pei, C.; Wang, W. I.

    2016-05-01

    In this work, the effects of substrate orientation on InSb quantum structure growth by molecular beam epitaxy (MBE) are presented. Motivated by the observation that (411) evolves naturally as a stable facet during MBE crystal growth, comparison studies have been carried out to investigate the effects of the crystal orientation of the underlying GaSb substrate on the growth of InSb by MBE. By depositing InSb on a number of different substrate orientations, namely: (100), (311), (411), and (511), a higher nanostructure density was observed on the (411) surface compared with the other orientations. This result suggests that the (411) orientation presents a superior surface in MBE growth to develop a super-flat GaSb buffer surface, naturally favorable for nanostructure growth.

  13. Molecular beam epitaxy of SrTiO3 with a growth window

    Science.gov (United States)

    Jalan, Bharat; Moetakef, Pouya; Stemmer, Susanne

    2009-07-01

    Many complex oxides with only nonvolatile constituents do not have a wide growth window in conventional molecular beam epitaxy (MBE) approaches, which makes it difficult to obtain stoichiometric films. Here it is shown that a growth window in which the stoichiometry is self-regulating can be achieved for SrTiO3 films by using a hybrid MBE approach that uses a volatile metal-organic source for Ti, titanium tetra isopropoxide (TTIP). The growth window widens and shifts to higher TTIP/Sr flux ratios with increasing temperature, showing that it is related to the desorption of the volatile TTIP. We demonstrate stoichiometric, highly perfect, insulating SrTiO3 films. The approach can be adapted for the growth of other complex oxides that previously were believed to have no wide MBE growth window.

  14. ELM mitigation by means of supersonic molecular beam and pellet injection on the EAST superconducting tokamak

    International Nuclear Information System (INIS)

    In this paper, we will present experimental results from EAST on the mitigation of edge localized modes (ELMs) using recently developed deuterium/lithium pellet injections as well as supersonic molecular beam injections (SMBI). Using a Laval nozzle, ELM mitigation with SMBI has been demonstrated in EAST in quasi-steady state. Using a D2 pellet injector, a giant ELM appears followed by a burst of high frequency ELMs at ∼300 Hz with duration of a few tens of milliseconds. Furthermore, for the first time, a novel technology using a simple rotating impeller to inject sub-millimeter size lithium (Li) granules at speeds of a few tens of meters per second was successfully used to pace ELMs. These experiments indicate that, on EAST, several technologies can contribute to the database supporting ELMs control in future fusion devices, such as ITER

  15. Analysis of carbon in SrTiO3 grown by hybrid molecular beam epitaxy

    International Nuclear Information System (INIS)

    Secondary ion mass spectroscopy (SIMS) was used to investigate carbon impurity concentrations in stoichiometric SrTiO3 films grown by a hybrid molecular beam epitaxy approach that uses an effusion cell to supply strontium, a rf plasma source for oxygen and a metal organic titanium source (titanium tetra isopropoxide). The carbon concentration in the films was measured as a function of growth parameters. At sufficiently high growth temperatures (>800 degree sign C), the films contain a few ppm of carbon. The challenges in accurately quantifying low carbon concentrations are discussed. A carbon-containing contamination layer is detected on the surfaces of SrTiO3 substrates and air-exposed films by SIMS and in scanning transmission electron microscopy. The contamination layer could be removed by high-temperature predeposition oxygen plasma cleaning.

  16. Real-time reflectance-difference spectroscopy of GaAs molecular beam epitaxy homoepitaxial growth

    Energy Technology Data Exchange (ETDEWEB)

    Lastras-Martínez, A., E-mail: alm@cactus.iico.uaslp.mx, E-mail: alastras@gmail.com; Ortega-Gallegos, J.; Guevara-Macías, L. E.; Nuñez-Olvera, O.; Balderas-Navarro, R. E.; Lastras-Martínez, L. F. [Instituto de Investigación en Comunicación Optica, Universidad Autónoma de San Luis Potosí, Alvaro Obregón 64, San Luis Potosí, SLP 78000 (Mexico); Lastras-Montaño, L. A. [IBM T. J. Watson Research Center, Yorktown Heights, New York 10598 (United States); Lastras-Montaño, M. A. [Department of Electrical and Computer Engineering, University of California, Santa Barbara, Santa Barbara, California 93106 (United States)

    2014-03-01

    We report on real time-resolved Reflectance-difference (RD) spectroscopy of GaAs(001) grown by molecular beam epitaxy, with a time-resolution of 500 ms per spectrum within the 2.3–4.0 eV photon energy range. Through the analysis of transient RD spectra we demonstrated that RD line shapes are comprised of two components with different physical origins and determined their evolution during growth. Such components were ascribed to the subsurface strain induced by surface reconstruction and to surface stoichiometry. Results reported in this paper render RD spectroscopy as a powerful tool for the study of fundamental processes during the epitaxial growth of zincblende semiconductors.

  17. Real-time reflectance-difference spectroscopy of GaAs molecular beam epitaxy homoepitaxial growth

    Directory of Open Access Journals (Sweden)

    A. Lastras-Martínez

    2014-03-01

    Full Text Available We report on real time-resolved Reflectance-difference (RD spectroscopy of GaAs(001 grown by molecular beam epitaxy, with a time-resolution of 500 ms per spectrum within the 2.3–4.0 eV photon energy range. Through the analysis of transient RD spectra we demonstrated that RD line shapes are comprised of two components with different physical origins and determined their evolution during growth. Such components were ascribed to the subsurface strain induced by surface reconstruction and to surface stoichiometry. Results reported in this paper render RD spectroscopy as a powerful tool for the study of fundamental processes during the epitaxial growth of zincblende semiconductors.

  18. Growth and characterization of molecular beam epitaxial GaAs layers on porous silicon

    Science.gov (United States)

    Lin, T. L.; Liu, J. K.; Sadwick, L.; Wang, K. L.; Kao, Y. C.

    1987-01-01

    GaAs layers have been grown on porous silicon (PS) substrates with good crystallinity by molecular beam epitaxy. In spite of the surface irregularity of PS substrates, no surface morphology deterioration was observed on epitaxial GaAs overlayers. A 10-percent Rutherford backscattering spectroscopy minimum channeling yield for GaAs-on-PS layers as compared to 16 percent for GaAs-on-Si layers grown under the same condition indicates a possible improvement of crystallinity when GaAs is grown on PS. Transmission electron microscopy reveals that the dominant defects in the GaAs-on-PS layers are microtwins and stacking faults, which originate from the GaAs/PS interface. GaAs is found to penetrate into the PS layers. n-type GaAs/p-type PS heterojunction diodes were fabricated with good rectifying characteristics.

  19. Copper-coated laser-fusion targets using molecular-beam levitation

    International Nuclear Information System (INIS)

    A series of diagnostic experiments at the Shiva laser fusion facility required targets of glass microspheres coated with 1.5 to 3.0 μm of copper. Previous batch coating efforts using vibration techniques gave poor results due to microsphere sticking and vacuum welding. Molecular Beam Levitation (MBL) represented a noncontact method to produce a sputtered copper coating on a single glassmicrosphere. The coating specifications that were achieved resulted in a copper layer up to 3 μm thick with the allowance of a maximum variation of 10 nm in surface finish and thickness. These techniques developed with the MBL may be applied to sputter coat many soft metals for fusion target applications

  20. High quality YBCO superconductive thin films fabricated by laser molecular beam epitaxy

    Institute of Scientific and Technical Information of China (English)

    2001-01-01

    High quality YBa2Cu3O6+x (YBCO) superconductive thin films have been fabricated on the SrTiO3(100) substrate using laser molecular beam epitaxy (laser-MBE).The active oxygen source was used,which made the necessary ambient oxygen pressure be 2-3 orders lower than that in pulsed laser deposition (PLD).Tc0 is 85-87 K,and Jc~1.0×106 A/cm2.Atomic force microscopy (AFM) measurements show that no obvious particulates can be observed and the root mean square roughness is 7.8 nm.High stability DC superconducting quantum interference devices (DC-SQUID) was fabricated using this YBCO thin film.

  1. Chemical intermediate detection following corona discharge on volatile organic compounds: general method using molecular beam techniques

    Energy Technology Data Exchange (ETDEWEB)

    He Luning; Sulkes, Mark, E-mail: cm06acf@tulane.edu [Chemistry Department, Tulane University, New Orleans, LA 70118 (United States)

    2011-07-13

    Nonthermal plasma (NTP)-based treatments of volatile organic compounds (VOCs) have potential for effective environmental remediation. Theory and experiment that consider the basic science pertaining to discharge events have helped improve NTP remediation outcomes. If direct information on early post-discharge chemical intermediates were also available, it would likely lead to additional improvement in NTP remediation outcomes. To this point, however, experiments yielding direct information on post-NTP VOC intermediates have been limited. An approach using supersonic expansion molecular beam methods offers general promise for detection of post-discharge VOC intermediates. To illustrate the potential utility of these methods, we present mass spectra showing the growth of early products formed when pulsed corona discharges were carried out on toluene in He and then in He with added O{sub 2}. Good general detection of neutral post-discharge species was obtained using 800 nm 150 fs photoionization pulses.

  2. Molecular beam epitaxy grown (Ga,Mn)(As,P) with perpendicular to plane magnetic easy axis

    International Nuclear Information System (INIS)

    We present an experimental investigation of the magnetic, electrical, and structural properties of Ga0.94Mn0.06As1-yPy layers grown by molecular beam epitaxy on GaAs substrates for y≤0.3. X-ray diffraction measurements reveal that the layers are under tensile strain, which gives rise to a magnetic easy axis perpendicular to the plane of the layers. The strength of the magnetic anisotropy and the coercive field increases as the phosphorous concentration is increased. The resistivity of all samples shows metallic behavior with the resistivity increasing as y increases. These materials will be useful for studies of micromagnetic phenomena requiring metallic ferromagnetic material with perpendicular magnetic anisotropy

  3. Towards precise defect control in layered oxide structures by using oxide molecular beam epitaxy

    Directory of Open Access Journals (Sweden)

    Federico Baiutti

    2014-05-01

    Full Text Available In this paper we present the atomic-layer-by-layer oxide molecular beam epitaxy (ALL-oxide MBE which has been recently installed in the Max-Planck Institute for Solid State Research and we report on its present status, providing some examples that demonstrate its successful application in the synthesis of different layered oxides, with particular reference to superconducting La2CuO4 and insulator-to-metal La2−xSrxNiO4. We briefly review the ALL-oxide MBE technique and its unique capabilities in the deposition of atomically smooth single-crystal thin films of various complex oxides, artificial compounds and heterostructures, introducing our goal of pursuing a deep investigation of such systems with particular emphasis on structural defects, with the aim of tailoring their functional properties by precise defects control.

  4. Electrical and optical properties of ZnO films grown by molecular beam epitaxy

    International Nuclear Information System (INIS)

    Zinc oxide (ZnO) films have been grown on sapphire by molecular beam epitaxy (MBE), and it is found that the grain size of the ZnO films increased with increasing the growth temperature. Photoluminescence (PL) study shows that the intensity ratio of near-band-edge emission to deep-level-related emission (NBE/DL) of the ZnO is significantly enhanced with increasing the growth temperature, and the dependence of the carrier mobility on the growth temperature shows very similar trend, which implies that there is a community factor that determines the optical and electrical properties of ZnO, and this factor is suggested to be the grain boundary. The results obtained in this paper reveal that by reducing the grain boundaries, ZnO films with high optical and electrical properties may be acquired.

  5. Intense terahertz emission from molecular beam epitaxy-grown GaAs/GaSb(001)

    Energy Technology Data Exchange (ETDEWEB)

    Sadia, Cyril P.; Laganapan, Aleena Maria; Agatha Tumanguil, Mae; Estacio, Elmer; Somintac, Armando; Salvador, Arnel [National Institute of Physics, University of the Philippines Diliman, Quezon City 1101 (Philippines); Que, Christopher T. [Physics Department, De La Salle University, 2401 Taft Avenue, Manila 1004 (Philippines); Yamamoto, Kohji; Tani, Masahiko [Research Center for Development of Far-Infrared Region, University of Fukui, Fukui 910-8507 (Japan)

    2012-12-15

    Intense terahertz (THz) electromagnetic wave emission was observed in undoped GaAs thin films deposited on (100) n-GaSb substrates via molecular beam epitaxy. GaAs/n-GaSb heterostructures were found to be viable THz sources having signal amplitude 75% that of bulk p-InAs. The GaAs films were grown by interruption method during the growth initiation and using various metamorphic buffer layers. Reciprocal space maps revealed that the GaAs epilayers are tensile relaxed. Defects at the i-GaAs/n-GaSb interface were confirmed by scanning electron microscope images. Band calculations were performed to infer the depletion region and electric field at the i-GaAs/n-GaSb and the air-GaAs interfaces. However, the resulting band calculations were found to be insufficient to explain the THz emission. The enhanced THz emission is currently attributed to a piezoelectric field induced by incoherent strain and defects.

  6. Magnetic properties of Mn3O4 film under compressive stress grown on MgAl2O4 (001) by molecular beam epitaxy

    International Nuclear Information System (INIS)

    High quality single-crystalline Mn3O4 thin films were grown on MgAl2O4 (001) substrates by plasma-assisted molecular beam epitaxy. It is found that the films are compressed in the (001) plane and elongated in the perpendicular direction via in-situ reflection high-energy electron diffraction and ex-situ X-ray diffraction, which is confirmed by frequency hardening of relevant Raman bands. Different from the bulk, the epitaxial film with a thickness of 65 nm shows more obvious magnetic anisotropy and higher magnetic phase transition temperatures (TN = 50 K, T1 = 40.5 K, and T2 = 36 K) than that of the bulk (TN = 42 K, T1 = 39 K, and T2 = 33 K). The variation of magnetic properties could be attributed to the changes of interplay among spin, orbital, and lattice degrees of freedom owing to the residual strain in the epitaxial film

  7. Layer by layer growth of BaTiO 3 thin films with extremely smooth surfaces by laser molecular beam epitaxy

    Science.gov (United States)

    Wang, H. S.; Ma, K.; Cui, D. F.; Peng, Z. Q.; Zhou, Y. L.; Lu, H. B.; Chen, Z. H.; Li, L.; Yang, G. Z.

    1997-05-01

    Using pure ozone-assisted laser molecular beam epitaxy, we have grown c-axis-oriented single crystal BaTiO 3 thin films on SrTiO 3 substrates at temperatures ( Ts) of 400-750°C and under ambient gas pressures of 5 × 10 -5 to 1 × 10 -1 Pa, respectively. Stripy reflection high-energy electron diffraction (RHEED) patterns and regular RHEED intensity oscillations reveal the smooth surface and layer-by-layer epitaxial growth of the films. Scanning electron microscopy analysis shows that the films are free of pinholes, grain boundaries and outgrowths on the surface. In addition, we found a strong dependence of the film lattice constant c on Ts, which might be related to the strain in the film.

  8. Electron mobility exceeding 160 000 cm2/V s in AlGaN/GaN heterostructures grown by molecular-beam epitaxy

    International Nuclear Information System (INIS)

    We report on the transport properties of a two-dimensional electron gas (2DEG) confined in an AlGaN/GaN heterostructure grown by plasma-assisted molecular-beam epitaxy on a semi-insulating GaN template prepared by hydride vapor phase epitaxy with a threading dislocation density of ∼5x107 cm-2. Using a gated Hall bar structure, the electron density (ne) is varied from 4.1 to 9.1x1011 cm-2. At T=300 mK, the 2DEG displays a maximum mobility of 167 000 cm2/V s at a sheet density of 9.1x1011 cm-2, corresponding to a mean-free-path of ∼3 μm. Shubnikov-de Haas oscillations, typically not observed at magnetic fields below 2 T in GaN, commence at B=0.6 T

  9. Laser desorption fast gas chromatography-mass spectrometry in supersonic molecular beams.

    Science.gov (United States)

    Shahar, T; Dagan, S; Amirav, A

    1998-06-01

    A novel method for fast analysis is presented. It is based on laser desorption injection followed by fast gas chromatography-mass spectrometry (GC-MS) in supersonic molecular beams. The sample was placed in an open air or purged laser desorption compartment, held at atmospheric pressure and near room temperature conditions. Desorption was performed with a XeCl Excimer pulsed laser with pulse energy of typically 3 mJ on the surface. About 20 pulses at 50 Hz were applied for sample injection, resulting in about 0.4 s injection time and one or a few micrograms sample vapor or small particles. The laser desorbed sample was further thermally vaporized at a heated frit glass filter located at the fast GC inlet. Ultrafast GC separation and quantification was achieved with a 50-cm-long megabore column operated with a high carrier gas flow rate of up to 240 mL/min. The high carrier gas flow rate provided effective and efficient entrainment of the laser desorbed species in the sweeping gas. Following the fast GC separation, the sample was analyzed by mass spectrometry in supersonic molecular beams. Both electron ionization and hyperthermal surface ionization were employed for enhanced selectivity and sensitivity. Typical laser desorption analysis time was under 10 s. The laser desorption fast GC-MS was studied and demonstrated with the following sample/matrices combinations, all without sample preparation or extraction: (a) traces of dioctylphthalate plasticizer oil on stainless steel surface and the efficiency of its cleaning; (b) the detection of methylparathion and aldicarb pesticides on orange leaves; (c) water surface analysis for the presence of methylparathion pesticide; (d) caffeine analysis in regular and decaffeinated coffee powder; (e) paracetamol and codeine drug analysis in pain relieving drug tablets; (f) caffeine trace analysis in raw urine; (g) blood analysis for the presence of 1 ppm lidocaine drug. The features and advantages of the laser desorption fast GC

  10. Disorder and defect formation mechanisms in molecular-beam-epitaxy grown silicon epilayers

    Energy Technology Data Exchange (ETDEWEB)

    Akbari-Sharbaf, Arash [Department of Physics and Astronomy, University of Western Ontario, London, ON, Canada N6A 3K7 (Canada); Baribeau, Jean-Marc; Wu, Xiaohua; Lockwood, David J. [Institute for Microstructural Sciences, National Research Council, Ottawa, ON, Canada K1A 0R6 (Canada); Fanchini, Giovanni, E-mail: gfanchin@uwo.ca [Department of Physics and Astronomy, University of Western Ontario, London, ON, Canada N6A 3K7 (Canada); Department of Chemistry, University of Western Ontario, London, ON, Canada N6A 5B7 (Canada)

    2013-01-01

    We investigate the role of disorder, stress and crystallite size in determining the density of defects in disordered and partially ordered silicon thin films deposited at low or moderate temperatures by molecular beam epitaxy. We find that the paramagnetic defect density measured by electron spin resonance (ESR) is strongly dependent on the growth temperature of the films, decreasing from ∼ 2 · 10{sup 19} cm{sup −3} at 98 °C to ∼ 1 · 10{sup 18} cm{sup −3} at 572 °C. The physical nature of the defects is strongly dependent on the range of order in the films: ESR spectra consistent with dangling bonds in an amorphous phase are observed at the lowest temperatures, while the ESR signal gradually becomes more anisotropic as medium-range order improves and the stress level (measured both by X-ray diffraction and Raman spectroscopy) is released in more crystalline films. Anisotropic ESR spectra consistent with paramagnetic defects embedded in an epitaxial phase are observed at the highest growth temperature (572 °C). - Highlights: ► Disordered Si epilayers were grown by molecular beam epitaxy. ► Growth has been carried out at temperatures T = 98 °C–514 °C. ► A correlation between defect density and disorder in the films has been found. ► Lack of medium range order and stress cause the formation of defects at low T. ► At high T, defects are associated to grain boundaries and oriented stacking faults.

  11. Laser molecular beam epitaxy of ZnO thin films and heterostructures

    International Nuclear Information System (INIS)

    We report on the growth of epitaxial ZnO thin films and ZnO-based heterostructures on sapphire substrates by laser molecular beam epitaxy (MBE). We first discuss some recent developments in laser-MBE such as flexible ultraviolet laser beam optics, infrared laser heating systems or the use of atomic oxygen and nitrogen sources, and describe the technical realization of our advanced laser-MBE system. Then we describe the optimization of the deposition parameters for ZnO films such as laser fluence and substrate temperature and the use of buffer layers. The detailed structural characterization by x-ray analysis and transmission electron microscopy shows that epitaxial ZnO thin films with high structural quality can be achieved, as demonstrated by a small out-of-plane and in-plane mosaic spread as well as the absence of rotational domains. We also demonstrate the heteroepitaxial growth of ZnO-based multilayers as a prerequisite for spin transport experiments and the realization of spintronic devices. As an example, we show that TiN/Co/ZnO/Ni/Au multilayer stacks can be grown on (0 0 0 1)-oriented sapphire with good structural quality of all layers and well defined in-plane epitaxial relations. (paper)

  12. A combined crossed molecular beams and theoretical study of the reaction CN + C2H4

    International Nuclear Information System (INIS)

    Highlights: • The CN + C2H4 reaction was investigated in crossed beam experiments. • Electronic structure calculations of the potential energy surface were performed. • RRKM estimates qualitatively reproduce the experimental C2H3NC yield. - Abstract: The CN + C2H4 reaction has been investigated experimentally, in crossed molecular beam (CMB) experiments at the collision energy of 33.4 kJ/mol, and theoretically, by electronic structure calculations of the relevant potential energy surface and Rice–Ramsperger–Kassel–Marcus (RRKM) estimates of the product branching ratio. Differently from previous CMB experiments at lower collision energies, but similarly to a high energy study, we have some indication that a second reaction channel is open at this collision energy, the characteristics of which are consistent with the channel leading to CH2CHNC + H. The RRKM estimates using M06L electronic structure calculations qualitatively support the experimental observation of C2H3NC formation at this and at the higher collision energy of 42.7 kJ/mol of previous experiments

  13. Molecular beam epitaxial growth of ferromagnetic Heusler alloys for group-IV semiconductor spintronic devices

    International Nuclear Information System (INIS)

    Our recent progress in low-temperature molecular beam epitaxy of ferromagnetic Heusler alloys on group-IV-semiconductor is reviewed. By optimizing beam flux ratio (Fe:Si = 3:1) and growth temperature (130 oC), a high-quality hybrid structure, i.e., DO3-type Fe3Si on Ge with an atomically flat interface, was achieved. Excellent magnetic properties with a small coercivity (0.9 Oe) and electrical properties with Schottky barrier height of 0.52 eV were obtained. The ratio of the on-current to the off-current of Schottky diode was on the order of 104. In addition, heteroepitaxy of half-metallic alloys (Fe3-XMnxSi(X = 0.6-1.4)) on Ge substrates was demonstrated. These results will be a powerful tool to open up group-IV-semiconductor spin-transistors, consisting of Ge channel with high mobility and ferromagnetic source/drain for spin-injection.

  14. Growth of Biaxially Textured Yttria-Stabilized Zirconia Thin Films on Si(111) Substrate by Ion Beam Assisted Deposition

    Institute of Scientific and Technical Information of China (English)

    MU Hai-Chuan; REN Cong-Xin; JIANG Bing-Yao; DING Xing-Zhao; YU Yue-Hui; WANG Xi; LIU Xiang-Huai; ZHOU Gui-En; JIA Yun-Bo

    2000-01-01

    The (001) oriented yttria-stabilized zirconia (YSZ) films with in-plane biaxial texture have been deposited on Si(lll ) substrates by ion beam assisted deposition at ambient temperature. The effects of ion/atom arrival rate ratio (R=(Ar+ +O2+)/ZrO2) and incident angle of bombarding ion beam on the film texture development were investigated. It was found that the in-plane biaxial texture of the films was improved gradually with increasing ion/atom arrival rate ratio R up to a critical value 1.9, but it was degraded with the further increase of R. The optimal in-plane biaxial texture, whose full width at half maximum of the (lll) φ-scan spectrum is 14°, can be obtained at R=1.9 and incident angle of 55°. For a fixed R, the optimal crystallinity and in-plane biaxial alignment of the YSZ films did not appear at the same incident angle and showed an opposite variation with the change of the incident angle from 51° to 55°. C-axis lignment (perpendicular to substrate surface) does not show any substantial variation with the change of incident angle within the range of 47° - 56°.

  15. Investigation of electrochemical etch differences in AlGaAs heterostructures using Cl{sub 2} ion beam assisted etching

    Energy Technology Data Exchange (ETDEWEB)

    Anglin, Kevin, E-mail: kevin.r.anglin@gmail.com; Goodhue, William D. [Massachusetts Institute of Technology Lincoln Laboratory, 244 Wood St., Lexington, Massachusetts 02420 and Department of Physics and Applied Physics, University of Massachusetts Lowell, 1 University Ave., Lowell, Massachusetts 01854 (United States); Swint, Reuel B.; Porter, Jeanne [Massachusetts Institute of Technology Lincoln Laboratory, 244 Wood St., Lexington, Massachusetts 02420 (United States)

    2015-03-15

    A deeply etched, anisotropic 45° and 90° mirror technology is developed for Al{sub x}Ga{sub 1−x}As heterostructures using a Cl{sub 2} ion beam assisted etching system. When etching vertically, using a conductive low-erosion Ni mask, electrochemical etch differences between layers with various Al mole fractions caused nonuniform sidewall profiles not seen in semi-insulating GaAs test samples. These variations, based on alloy composition, were found to be negligible when etching at a 45°. A Si{sub 3}N{sub 4}-Ni etch mask is designed in order to electrically isolate charge buildup caused by the incoming Ar{sup +} ion beam to the Ni layer, preventing conduction to the underlying epitaxial layers. This modification produced smoothly etched facets, up to 8 μm in depth, enabling fabrication of substrate–surface-emitting slab-coupled optical waveguide lasers and other optoelectronic devices.

  16. Nitrogen ion energy dependencies of dielectric constants and compositions of barium carbide-barium nitrate mixed films deposited on silicon wafers by an ion beam assisted deposition technique

    International Nuclear Information System (INIS)

    Thin BaC6-BaN2O4 mixed films with a thickness of 25-60 nm were deposited on Si wafers by evaporating BaCO3 with electron beams and simultaneously applying a mixed beam of N2 molecules and nitrogen ions (an ion beam assisted deposition technique). BaC6 films deposited on Si wafers by evaporating only BaCO3 had low-k values, such as 1.3. In contrast, mixed films containing a small amount of BaC6 and a large amount of BaN2O4 had mild k values, such as 5.6

  17. Ion beam assisted synthesis of nano-crystals in glasses (silver and lead chalcogenides)

    International Nuclear Information System (INIS)

    This work deals with the interest in ion beams for controlling nano-crystals synthesis in glasses. We show two different ways to reach this aim, insisting on importance of redox phenomena induced by the penetration and implantation of ions in glasses. We first show that we can use the great energy density deposited by the ions to tailor reducing conditions, favorable to metallic nano-crystal precipitation. In particular, we show that microscopic mechanism of radiation induced silver precipitation in glasses are analogous to the ones of classical photography. Ion beams can also be used to overcome supersaturation of elements in a given matrix. In this work, we synthesized lead chalcogenide nano-crystals (PbS, PbSe, PbTe) whose optical properties are interesting for telecommunication applications. We demonstrate the influence of complex chalcogenide chemistry in oxide glasses, and its relationship with the observed loss of growth control when nano-crystals are synthesized by sequential implantation of Pb and S in pure silica. As a consequence of this understanding, we demonstrate a novel and controlled synthesis of PbS nano-crystals, consisting in implanting sulfur into a Pb-containing glass, before annealing. Choice of glass composition provides a better control of precipitation physico-chemistry, whereas the use of implantation allows high nano-crystal volume fractions to be reached. Our study of IR emission properties of these nano-crystals shows a very high excitation cross section, and evidence for a 'dark exciton' emitting level. (author)

  18. Growth of SrVO3 thin films by hybrid molecular beam epitaxy

    International Nuclear Information System (INIS)

    The authors report the growth of stoichiometric SrVO3 thin films on (LaAlO3)0.3(Sr2AlTaO6)0.7 (001) substrates using hybrid molecular beam epitaxy. This growth approach employs a conventional effusion cell to supply elemental A-site Sr and the metalorganic precursor vanadium oxytriisopropoxide (VTIP) to supply vanadium. Oxygen is supplied in its molecular form through a gas inlet. An optimal VTIP:Sr flux ratio has been identified using reflection high-energy electron-diffraction, x-ray diffraction, atomic force microscopy, and scanning transmission electron microscopy, demonstrating stoichiometric SrVO3 films with atomically flat surface morphology. Away from the optimal VTIP:Sr flux, characteristic changes in the crystalline structure and surface morphology of the films were found, enabling identification of the type of nonstoichiometry. For optimal VTIP:Sr flux ratios, high quality SrVO3 thin films were obtained with smallest deviation of the lattice parameter from the ideal value and with atomically smooth surfaces, indicative of the good cation stoichiometry achieved by this growth technique

  19. Repeatable low-temperature negative-differential resistance from Al0.18Ga0.82N/GaN resonant tunneling diodes grown by molecular-beam epitaxy on free-standing GaN substrates

    Science.gov (United States)

    Li, D.; Tang, L.; Edmunds, C.; Shao, J.; Gardner, G.; Manfra, M. J.; Malis, O.

    2012-06-01

    Low-aluminum composition AlGaN/GaN double-barrier resonant tunneling structures were grown by plasma-assisted molecular-beam-epitaxy on free-standing c-plane GaN substrates grown by hydride-vapor phase epitaxy. Clear, exactly reproducible, negative-differential resistance signatures were observed from 4 × 4 μm2 devices at 1.5 V and 1.7 V at 77 K. The relatively small value of the maximum peak-to-valley ratio (1.03) and the area dependence of the electrical characteristics suggest that charge transport is affected by leakage paths through dislocations. However, the reproducibility of the data indicates that electrical traps play no significant role in the charge transport in resonant tunneling diodes grown by molecular-beam-epitaxy under Ga-rich conditions on free-standing GaN substrates.

  20. Laser assisted modification and chemical metallization of electron-beam deposited ceria thin films

    International Nuclear Information System (INIS)

    Excimer laser processing is applied for tailoring the surface morphology and phase composition of CeO2 ceramic thin films. E-beam evaporation technique is used to deposit samples on stainless steel and silicate glass substrates. The films are then irradiated with ArF* excimer laser pulses under different exposure conditions. Scanning electron microscopy, optical spectrophotometry, X-ray diffractometry and EDS microanalysis are used to characterize the non-irradiated and laser-processed films. Upon UV laser exposure there is large increase of the surface roughness that is accompanied by photo-darkening and ceria reduction. It is shown that the laser induced changes in the CeO2 films facilitate the deposition of metal nano-aggregates in a commercial copper electroless plating bath. The significance of laser modification as a novel approach for the production of CeO2 based thin film catalysts is discussed.

  1. Integration of carbon nanotubes with semiconductor technology: fabrication of hybrid devices by III–V molecular beam epitaxy

    DEFF Research Database (Denmark)

    Stobbe, Søren; Lindelof, P. E.; Nygård, J.

    2006-01-01

    incorporation of singlewall nanotubes in III–V semiconductor heterostructures grown by molecular beam epitaxy (MBE). We demonstrate that singlewall carbon nanotubes can be overgrown using MBE; electrical contacts to the nanotubes are obtained by GaMnAs grown at 250 °C. The resulting devices can exhibit field...

  2. An apparatus for isotopic ratio measurement in UF5 formed by infrared multiphoton dissociation of UF6 in molecular beam

    International Nuclear Information System (INIS)

    A Separation factor was measured in isotopically selective infrared multiphoton dissociation (IRMPD) of supercooled UF6 in a supersonic expansion by multiphoton ionization (MPI) and time-of-flight mass spectrometry (TOFMS). A pulsed free-jet nozzle was used to generate a UF6-molecular beam seeded in Ar (∼10-7 Torr in UF6 partial pressure). Two-frequency p-H2 Raman laser beams around 16 μm were used for the dissociation of UF6 under collisionless conditions in the molecular beam where the flow velocity for UF6 is about 500 m/s. The 235U/238U isotopic ratios in nascent UF5 photoproducts were determined by selective MPI of UF5 at 532 nm followed by TOFMS with a mass resolution as high as 1200. A separation factor of about 2 was observed under the experimental conditions chosen for the demonstration of this method. (author)

  3. Surfactant assisted ion beam erosion of GaN and AlN surfaces

    International Nuclear Information System (INIS)

    We investigate the evolution of the surface morphology of AlN and GaN surfaces during ion beam erosion. AlN and GaN films grown on sapphire substrates were irradiated at room temperature with few keV Xe ions at normal ion incidence with ion fluences up to 4.1017 cm-2. The surface morphology was analyzed using atomic force microscopy and scanning electron microscopy. For GaN selective sputtering causes segregation of Ga on the surface, resulting in a dense coverage with small spherical Ga droplets. With increasing ion fluence the droplet size increases. The Ga coverage was quantitatively analyzed with SEM and Rutherford backscattering. For AlN, the rms roughness of the surface decreases with increasing ion fluence from initially 8 nm to about 3 nm at 4.1017 cm-2. No ripple or dot patterns were observed. Sputtering of AlN with simultaneous co-deposition of Ga, results in the formation of randomly distributed small Ga droplets and Al0.8Ga0.2 islands of few nm in size on the AlN surface. The rms roughness of such a surface is only about 1.3 nm. The density of droplets and islands decreases with increasing ion fluence. In the intermediate regions the AlN surface appears rather flat with rms roughness well below 1 nm.

  4. Hydrogen assisted stress-cracking behaviour of electron beam welded supermartensitic stainless steel weldments

    International Nuclear Information System (INIS)

    Supermartensitic stainless steel (SMSS) grades are gaining popularity as an alternate material to duplex and super duplex stainless steels for applications in oil and gas industries. The weldability of these steels, though reported to be better when compared to conventional martensitic stainless steels, so far has been addressed with duplex stainless steel electrodes/fillers. This work addresses the stress-cracking behaviour of weldments of a high-grade supermartensitic stainless steel (11% Cr, 6.5% Ni and 2% Mo) in the presence of hydrogen. Welds were produced with matching consumables, using electron beam welding (EBW) process. Weldments were subjected to slow strain rate tests in 0.1 M NaOH solution, with introduction of hydrogen into the specimens by means of potentiostatic cathodic polarisation at a potential of -1200 mV versus Ag/AgCl electrode. Reference tests were performed in air for comparison, and the results suggest that both the SMSS base material and the EB weld metal are susceptible to embrittlement under the conditions of hydrogen charging

  5. Gas-assisted electron-beam-induced nanopatterning of high-quality titanium oxide

    Science.gov (United States)

    Riazanova, A. V.; Costanzi, B. N.; Aristov, A. I.; Rikers, Y. G. M.; Mulders, J. J. L.; Kabashin, A. V.; Dahlberg, E. Dan; Belova, L. M.

    2016-03-01

    Electron-beam-induced deposition of titanium oxide nanopatterns is described. The precursor is titanium tetra-isopropoxide, delivered to the deposition point through a needle and mixed with oxygen at the same point via a flow through a separate needle. The depositions are free of residual carbon and have an EDX determined stoichiometry of TiO2.2. High resolution transmission electron microscopy and Raman spectroscopy studies reveal an amorphous structure of the fabricated titanium oxide. Ellipsometric characterization of the deposited material reveals a refractive index of 2.2-2.4 RIU in the spectral range of 500-1700 nm and a very low extinction coefficient (lower than 10-6 in the range of 400-1700 nm), which is consistent with high quality titanium oxide. The electrical resistivity of the titanium oxide patterned with this new process is in the range of 10-40 GΩ cm and the measured breakdown field is in the range of 10-70 V μm-1. The fabricated nanopatterns are important for a variety of applications, including field-effect transistors, memory devices, MEMS, waveguide structures, bio- and chemical sensors.

  6. Supersonic molecular beam electric resonance spectroscopy and van der Waals molecules

    International Nuclear Information System (INIS)

    A supersonic molecular beam electric resonance (MBER) spectrometer was built to study the radiofrequency spectra of weakly bound gas phase van der Waals molecules. The instrument and its operating characteristics are described in detail. Sample mass spectra of Ar-ClF gas mixtures are also presented as an illustration of the synthesis of van der Waals molecules. The Stark focusing process for linear polar molecules is discussed and computer-simulated using both second order perturbation and variational methods. Experimental refocusing spectra of OCS and ClF are studied and compared with these trajectory calculations. Though quantitative fitting is poor, there are strong qualitative indicators that the central part of a supersonic beam consists of molecules with a significantly greater population in the lowest energy rotational states than generally assumed. Flop in as opposed to flop out resonance signals for OCS are also numerically predicted and observed. The theoretical properties of the MBER spectrum for linear molecules are elaborated upon with special emphasis on line shape considerations. MBER spectra of OCS and ClF under a variety of conditions are presented and discussed in context to these predictions. There is some uncertainty expressed both in our own modeling and in the manner complex MBER spectra have been analyzed in the past. Finally, an electrostatic potential model is used to quantitatively describe the class of van der Waals molecules Ar-MX, where MX is an alkali halide. Energetics and equilibrium geometries are calculated. The validity of using an electrostatic model to predict van der Waals bond properties is critically discussed

  7. Study on Size-Dependent Young’s Modulus of a Silicon Nano beam by Molecular Dynamics Simulation

    International Nuclear Information System (INIS)

    Young’s modulus of a silicon nano beam with a rectangular cross-section is studied by molecular dynamics method. Dynamic simulations are performed for doubly clamped silicon nano beams with lengths ranging from 4.888 to 12.491 nm and cross-sections ranging from 1.22 nm ×1.22 nm to 3.39 nm × 3.39 nm. The results show that Young’s moduli of such small silicon nano beams are much higher than the value of Young’s modulus for bulk silicon. Moreover, the resonant frequency and Young’s modulus of the Si nano beam are strongly dependent not only on the size of the nano beam but also on surface effects. Young’s modulus increases significantly with the decreasing of the thickness of the silicon nano beam. This result qualitatively agrees with one of the conclusions based on a semi continuum model, in which the surface relaxation and the surface tension were taken into consideration. The impacts of the surface reconstruction with (2 ×1) dimmers on the resonant frequency and Young’s modulus are studied in this paper too. It is shown that the surface reconstruction makes the silicon nano beam stiffer than the one without the surface reconstruction, resulting in a higher resonant frequency and a larger Young’s modulus

  8. Copper ion implanted aluminum nitride dilute magnetic semiconductors (DMS) prepared by molecular beam epitaxy

    International Nuclear Information System (INIS)

    Highlights: • AlN:Cu dilute magnetic semiconductors were successfully prepared by molecular beam epitaxy followed by Cu+ implantation. • Room temperature ferromagnetism was observed after annealing the samples at appropriate temperature. • XRD and Raman spectrometry excluded the possibility of formation of any secondary phases. • By doping intrinsically nonmagnetic dopants (Cu), it has been proved experimentally that their precipitates do not contribute to ferromagnetism. • The reason for ferromagnetism in Cu-doped AlN as observed was explained on the basis of p–d hybridization mechanism (Wu et al.). - Abstract: Diluted magnetic semiconductor (DMS) AlN:Cu films were fabricated by implanting Cu+ ions into AlN thin films at various ion fluxes. AlN films were deposited on c-plane sapphire by molecular beam epitaxy followed by Cu+ ion implantation. The structural and magnetic characterization of the samples was performed through Rutherford backscattering and channeling spectrometry (RBS/C), X-ray diffraction (XRD), Raman spectroscopy, vibrating sample magnetometer (VSM) and SQUID. Incorporation of copper into the AlN lattice was confirmed by RBS, while XRD revealed that no new phase was formed as a result of ion implantation. RBS also indicated formation of defects as a result of implantation process and the depth and degree of damage increased with an increase in ion fluence. Raman spectra showed only E2 (high) and A1 (LO) modes of wurtzite AlN crystal structure and confirmed that no secondary phases were formed. It was found that both Raman modes shift with Cu+ fluences, indicating that Cu ion may go to interstitial or substitutional sites resulting in distortion or damage of lattice. Although as implanted samples showed no magnetization, annealing of the samples resulted in appearance of room temperature ferromagnetism. The saturation magnetization increased with both the annealing temperature as well as with ion fluence. FC/ZFC measurements indicated

  9. Molecular modeling assisted hapten design to produce broad selectivity antibodies for fluoroquinolone antibiotics.

    Science.gov (United States)

    Pinacho, Daniel G; Sánchez-Baeza, Francisco; Marco, M-Pilar

    2012-05-15

    Antibodies with a wide recognition profile of fluoroquinolone antibiotics have been produced based on chemical criteria, theoretical studies, and molecular modeling assisted hapten design. The immunizing hapten preserves the most important and characteristic epitopes of this antibiotic family. The studies have taken into consideration the zwitterionic character of most of the fluoroquinolones and the relative concentration of the different species in equilibrium at physiologic pH. The hapten is prepared in the form of a stable prehapten through a 5 step synthetic pathway. Immediately before conjugation, the immunizing hapten is obtained by removing the diphenylmethane protecting group. The specificity of the antibodies obtained is directed toward the common area defined by the fluorine atom at position 6 and the β-ketoacid moiety. The ELISA developed is able to recognize with very good detectability important fluoroquinolones used in the veterinary field such as ciprofloxacin (CPFX, IC(50), 0.35 μg L(-1)), enrofloxacin (ERFX, IC(50), 0.65 μg L(-1)), danofloxacin (DNFX, IC(50), 7.31 μg L(-1)), difloxacin (DFX, IC(50), 0.91 μg L(-1)), sarafloxacin (SRFX, IC(50), 0.96 μg L(-1)), norfloxacin (NRFX, IC(50), 0.78 μg L(-1)), ofloxacin (OFX, IC(50), 1.84 μg L(-1)), flumequine (Flume, IC(50), 3.91 μ gL(-1)), marbofloxacin (MBFX, IC(50), 4.30 μ gL(-1)), and oxolinic acid (OXO, IC(50), 23.53 μg L(-1)). The results presented here demonstrate that the antibody affinity is strongly affected by the presence of divalent cations, owing to their complexation with the fluoroquinolone molecules. Moreover, the outcome from the effect of the pH on the immunochemical assays suggests that the selectivity could be modulated with the pH due to the zwitterionic character of the fluoroquinolones and as a function of their different pK(a) values. PMID:22545705

  10. Molecular Assisted Breeding and Adaptability Analysis of Zhongyouza 11 with Super High Oil Content

    Institute of Scientific and Technical Information of China (English)

    2007-01-01

    Using a three-line system of Shaan 2A cytoplasmic male sterility, a hybrid variety rapeseed, Zhongyouza 11, was developed by the combination of traditional methods and a molecular marker-assisted breeding technique. This hybrid variety had high grain yield, high oil content, wide adaptability, and good quality. The oil content of Zhongyouza 11 is steadily above 43% in the three ecological regions along the Yangtze River valley, which is the largest winter oilseed production area in China. The highest oil content of Zhongyouza 11 reached 46.68% in the upper reaches of the Yangtze River valley in 2003-2004, which was the highest among all lines involved in the national regional rapeseed variety trials. In the regional yield trials in Hubei Province, the average yield of Zhongyouza 11 reached 2 853 kg ha-1 (2002-2004), yielding more than the control variety Zhongshuang 6 by 11.34%. In the national trials, the yield of Zhongyouza 11 reached 2 405.7, 2 697.3, and 2 770.2 kg ha-1 in the upper, middle, and lower reaches of the Yangtze River valley, yielding more than the control varieties by 11.52, 12.9, and 14.92%, respectively, in 2003-2005. Both the high oil content and high grain yield contributed to the high oil yield of Zhongyouza 11. The oil yield of Zhongyouza 11 in the national trials reached 1083.3, 1210.2, and 1224.8 kg ha-1, yielding more than the controls by 29.42, 27.65, and 20.98%, respectively, in the upper, middle, and lower reaches of the Yangtze River valley. The highest oil yield reached 1369.65 kg ha-1 in the middle reach of the Yangtze River valley(2003-2004), with an increase of 46.21% compared to the control. The experimental sites distributed widely along the Yangtze River valley, cover most of the Chinese winter rapeseed production areas. Among the 89 experimental location/years, the yield of Zhongyouza 11 surpassed the controls at 77 location/years in the trials, indicating its wide adaptability.Zhongyouza 11 was the only one that passed the

  11. Effect of AlN buffer layer properties on the morphology and polarity of GaN nanowires grown by molecular beam epitaxy

    International Nuclear Information System (INIS)

    Low-temperature AlN buffer layers grown via plasma-assisted molecular beam epitaxy on Si (111) were found to significantly affect the subsequent growth morphology of GaN nanowires. The AlN buffer layers exhibited nanowire-like columnar protrusions, with their size, shape, and tilt determined by the AlN V/III flux ratio. GaN nanowires were frequently observed to adopt the structural characteristics of the underlying AlN columns, including the size and the degree of tilt. Piezoresponse force microscopy and polarity-sensitive etching indicate that the AlN films and the protruding columns have a mixed crystallographic polarity. Convergent beam electron diffraction indicates that GaN nanowires are Ga-polar, suggesting that Al-polar columns are nanowire nucleation sites for Ga-polar nanowires. GaN nanowires of low density could be grown on AlN buffers that were predominantly N-polar with isolated Al-polar columns, indicating a high growth rate for Ga-polar nanowires and suppressed growth of N-polar nanowires under typical growth conditions. AlN buffer layers grown under slightly N-rich conditions (V/III flux ratio = 1.0 to 1.3) were found to provide a favorable growth surface for low-density, coalescence-free nanowires.

  12. Structural anisotropic properties of a-plane GaN epilayers grown on r-plane sapphire by molecular beam epitaxy

    International Nuclear Information System (INIS)

    Heteroepitaxial non-polar III-Nitride layers may exhibit extensive anisotropy in the surface morphology and the epilayer microstructure along distinct in-plane directions. The structural anisotropy, evidenced by the “M”-shape dependence of the (112¯0) x-ray rocking curve widths on the beam azimuth angle, was studied by combining transmission electron microscopy observations, Raman spectroscopy, high resolution x-ray diffraction, and atomic force microscopy in a-plane GaN epilayers grown on r-plane sapphire substrates by plasma-assisted molecular beam epitaxy (PAMBE). The structural anisotropic behavior was attributed quantitatively to the high dislocation densities, particularly the Frank-Shockley partial dislocations that delimit the I1 intrinsic basal stacking faults, and to the concomitant plastic strain relaxation. On the other hand, isotropic samples exhibited lower dislocation densities and a biaxial residual stress state. For PAMBE growth, the anisotropy was correlated to N-rich (or Ga-poor) conditions on the surface during growth, that result in formation of asymmetric a-plane GaN grains elongated along the c-axis. Such conditions enhance the anisotropy of gallium diffusion on the surface and reduce the GaN nucleation rate.

  13. Hollow-anode plasma source for molecular beam epitaxy of gallium nitride

    International Nuclear Information System (INIS)

    GaN films have been grown by molecular beam epitaxy (MBE) using a hollow-anode nitrogen plasma source. The source was developed to minimize defect formation as a result of contamination and ion damage. The hollow-anode discharge is a special form of glow discharge with very small anode area. A positive anode voltage drop of 30 endash 40 V and an increased anode sheath thickness leads to ignition of a relatively dense plasma in front of the anode hole. Driven by the pressure gradient, the open-quote open-quote anode close-quote close-quote plasma forms a bright plasma jet streaming with supersonic velocity towards the substrate. Films of GaN have been grown on (0001) SiC and (0001) Al2O3 at 600 endash 800 degree C. The films were investigated by photoluminescence, cathodoluminescence, x-ray diffraction, Rutherford backscattering, and particle-induced x-ray emission. The film with the highest structural quality had a rocking curve width of 5 arcmin, the lowest reported value for MBE growth to date. copyright 1996 American Institute of Physics

  14. Growth and properties of GdTiO3 films prepared by hybrid molecular beam epitaxy

    Science.gov (United States)

    Moetakef, Pouya; Ouellette, Daniel G.; Zhang, Jack Y.; Cain, Tyler A.; Allen, S. James; Stemmer, Susanne

    2012-09-01

    The paper reports on the thin film growth of a protoptype Mott insulator, ferrimagnetic GdTiO3, using shuttered molecular beam epitaxy. Substrates were (001) (LaAlO3)0.3(Sr2AlTaO6)0.7 (LSAT), with and without epitaxial SrTiO3 buffer layers, respectively. It was found that on bare LSAT, the starting monolayer was crucial for stabilizing the GdTiO3 perovskite phase. The quality of the films was evaluated using structural, electric, optical and magnetic characterization. Structural characterization showed that the GdTiO3 layers were free of pyrochlore impurity phases and that the lattice parameter was close to what was expected for coherently strained, stoichiometric GdTiO3. The room temperature film resistivity was 7 Ωcm and increased with decreasing temperature, consistent with Mott insulating characteristics. The Curie temperature was 30 K and a small coercivity was observed at 2 K, in good agreement with bulk GdTiO3 properties reported in the literature.

  15. Magnetotransport in MgO-based magnetic tunnel junctions grown by molecular beam epitaxy (invited)

    International Nuclear Information System (INIS)

    The strong impact of molecular beam epitaxy growth and Synchrotron Radiation characterization tools in the understanding of fundamental issues in nanomagnetism and spintronics is illustrated through the example of fully epitaxial MgO-based Magnetic Tunnel Junctions (MTJs). If ab initio calculations predict very high tunnel magnetoresistance (TMR) in such devices, some discrepancy between theory and experiments still exists. The influence of imperfections in real systems has thus to be considered like surface contaminations, structural defects, unexpected electronic states, etc. The influence of possible oxygen contamination at the Fe/MgO(001) interface is thus studied, and is shown to be not so detrimental to TMR as predicted by ab initio calculations. On the contrary, the decrease of dislocations density in the MgO barrier of MTJs using Fe1−xVx electrodes is shown to significantly increase TMR. Finally, unexpected transport properties in Fe1−XCox/MgO/Fe1−XCox (001) are presented. With the help of spin and symmetry resolved photoemission and ab initio calculation, the TMR decrease for Co content higher than 25% is shown to come from the existence of an interface state and the shift of the empty Δ1 minority spin state towards the Fermi level

  16. Carbon doping in molecular beam epitaxy of GaAs from a heated graphite filament

    Science.gov (United States)

    Malik, R. J.; Nottenberg, R. N.; Schubert, E. F.; Walker, J. F.; Ryan, R. W.

    1988-01-01

    Carbon doping of GaAs grown by molecular beam epitaxy has been obtained for the first time by use of a heated graphite filament. Controlled carbon acceptor concentrations over the range of 10 to the 17th-10 to the 20th/cu cm were achieved by resistively heating a graphite filament with a direct current power supply. Capacitance-voltage, p/n junction and secondary-ion mass spectrometry measurements indicate that there is negligible diffusion of carbon during growth and with postgrowth rapid thermal annealing. Carbon was used for p-type doping in the base of Npn AlGaAs/GaAs heterojunction bipolar transistors. Current gains greater than 100 and near-ideal emitter heterojunctions were obtained in transistors with a carbon base doping of 1 x 10 to the 19th/cu cm. These preliminary results indicate that carbon doping from a solid graphite source may be an attractive substitute for beryllium, which is known to have a relatively high diffusion coefficient in GaAs.

  17. Molecular beam epitaxy growth and magnetic properties of Cr-Co-Ga Heusler alloy films

    Energy Technology Data Exchange (ETDEWEB)

    Feng, Wuwei, E-mail: wfeng@cugb.edu.cn; Wang, Weihua [School of Materials Science and Technology, China University of Geosciences, Beijing 100083 (China); Zhao, Chenglong [Key Laboratory for Renewable Energy, Beijing Key Laboratory for New Energy Materials and Devices, Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190 (China); Van Quang, Nguyen; Cho, Sunglae, E-mail: slcho@ulsan.ac.kr [Department of Physics, University of Ulsan, Ulsan 680-749 (Korea, Republic of); Dung, Dang Duc [Department of General Physics, School of Engineering Physics, Ha Noi University of Science and Technology, 1 Dai Co Viet Road, Ha Noi (Viet Nam)

    2015-11-15

    We have re-investigated growth and magnetic properties of Cr{sub 2}CoGa films using molecular beam epitaxy technique. Phase separation and precipitate formation were observed experimentally again in agreement with observation of multiple phases separation in sputtered Cr{sub 2}CoGa films by M. Meinert et al. However, significant phase separation could be suppressed by proper control of growth conditions. We showed that Cr{sub 2}CoGa Heusler phase, rather than Co{sub 2}CrGa phase, constitutes the majority of the sample grown on GaAs(001) at 450 {sup o}C. The measured small spin moment of Cr{sub 2}CoGa is in agreement with predicted HM-FCF nature; however, its Curie temperature is not as high as expected from the theoretical prediction probably due to the off-stoichiometry of Cr{sub 2}CoGa and the existence of the disorders and phase separation.

  18. Thin film growth of CaFe2As2 by molecular beam epitaxy

    Science.gov (United States)

    Hatano, T.; Kawaguchi, T.; Fujimoto, R.; Nakamura, I.; Mori, Y.; Harada, S.; Ujihara, T.; Ikuta, H.

    2016-01-01

    Film growth of CaFe2As2 was realized by molecular beam epitaxy on six different substrates that have a wide variation in the lattice mismatch to the target compound. By carefully adjusting the Ca-to-Fe flux ratio, we obtained single-phase thin films for most of the substrates. Interestingly, an expansion of the CaFe2As2 lattice to the out-of-plane direction was observed for all films, even when an opposite strain was expected. A detailed microstructure observation of the thin film grown on MgO by transmission electron microscope revealed that it consists of cube-on-cube and 45°-rotated domains. The latter domains were compressively strained in plane, which caused a stretching along the c-axis direction. Because the domains were well connected across the boundary with no appreciable discontinuity, we think that the out-of-plane expansion in the 45°-rotated domains exerted a tensile stress on the other domains, resulting in the unexpectedly large c-axis lattice parameter, despite the apparently opposite lattice mismatch.

  19. Molecular-beam epitaxy of CdTe on large area Si(100)

    Science.gov (United States)

    Sporken, R.; Lange, M. D.; Faurie, J. P.; Petruzzello, J.

    1991-10-01

    We have grown CdTe directly on 2- and 5-in. diam Si(100) by molecular-beam epitaxy and characterized the layers by in situ reflection high-energy electron diffraction, double crystal x-ray diffraction, scanning electron microscopy, transmission electron microscopy, and low-temperature photoluminescence. The films are up to 10-μm thick and mirror-like over their entire surface. Even on 5-in. diam wafers, the structural and thickness uniformity is excellent. Two domains, oriented 90° apart, are observed in the CdTe films on oriented Si(100) substrates, whereas single-domain films are grown on Si(100) titled 6° or 8° toward [011]. The layers on misoriented substrates have better morphology than those on oriented Si(100), and the substrate tilt also eliminates twinning in the CdTe layers. First attempts to grow HgCdTe on Si(100 with a CdTe buffer layer have produced up to 10-μm thick layers with cutoff wavelengths between 5 and 10-μm and with an average full width at half-maximum of the double-crystal x-ray diffraction peaks of 200 arc s.

  20. Growth of HfOx thin films by reactive molecular beam epitaxy

    International Nuclear Information System (INIS)

    Thin films of hafnium oxide were grown on single crystal r-cut and c-cut sapphire by reactive molecular beam epitaxy. The conditions for the growth of single oriented hafnium oxide thin films have been established. Hafnium oxide thin films were characterized by X-ray diffraction and optical absorption measurements. It was found that hafnium oxide thin films grown on r-cut sapphire were (00l) oriented whereas, on c-cut sapphire, hafnium oxide films showed different orientations depending on the growth temperature and oxidation conditions. The hafnium oxide films grown at higher temperature and under strong oxidation conditions yielded (001) oriented films on c-cut sapphire whereas slightly weaker oxidation condition leads to (111) oriented hafnium oxide films. The bandgap deducted from optical absorption measurement carried out on hafnium oxide films grown under optimized conditions agreed well with the values reported in literature. A range of oxygen deficient thin films of hafnium oxide were also grown on single crystal sapphire substrates in order to investigate the effect of oxygen vacancies on dielectric properties of hafnium oxide. The oxygen deficient thin films of hafnium oxide show a decrease in bandgap with increase in oxygen deficiency

  1. Molecular beam epitaxy of Ge-Sb-Te thin films on Si substrates

    International Nuclear Information System (INIS)

    Owing to their phase-change properties, Ge-Sb-Te thin films, i.e., Ge2Sb2Te5 (GST), are being intensively studied for new concepts of non-volatile memory. The deposition technique commonly employed is sputtering, leading to poly-crystalline layers. Here it is shown that molecular beam epitaxy allows for the preparation of highly ordered Ge-Sb-Te films even on strongly lattice-mismatched substrates like Si. In situ reflection high-energy diffraction and quadrupole mass spectrometry are utilized to monitor the growth process in real time. Ex situ X-ray diffraction, atomic force microscopy and secondary electron microscopy, and X-ray fluorescence are used to investigate the structural properties, the surface morphology, and the stoichiometry of the grown films, respectively. As main result, single crystalline GST layers can be achieved on Si(111) substrates with epitaxial relationships GST[111]//Si[111] and GST//Si in the growth direction and in-plane, respectively. The growth on Si(001) instead produces (111)-oriented films with weak texture. GST thin films with a high structural order are expected to exhibit superior electrical/switching properties to the poly-crystalline layers deposited by sputtering.

  2. MnTe and ZnTe grown on sapphire by molecular beam epitaxy

    Energy Technology Data Exchange (ETDEWEB)

    Przezdziecka, E. [Institute of Physics, Polish Academy of Sciences, Al. Lotnikow 32/46, 02-668 Warsaw (Poland)], E-mail: Ewa.Przezdziecka@ifpan.edu.pl; Dynowska, E.; Paszkowicz, W.; Dobrowolski, W. [Institute of Physics, Polish Academy of Sciences, Al. Lotnikow 32/46, 02-668 Warsaw (Poland); Kepa, H. [Institute of Experimental Physics, ul. Hoza 69, 00-681 Warsaw (Poland); Majkrzak, C.F. [Center for Neutron Research, National Institute of Standards and Technology, Gaithersburg, MD 20899 (United States); Giebultowicz, T.M. [Physics Department, Oregon State University, Corvallis, OR 97331 (United States); Janik, E. [Institute of Physics, Polish Academy of Sciences, Al. Lotnikow 32/46, 02-668 Warsaw (Poland); Kossut, J. [Institute of Physics, Polish Academy of Sciences, and ERATO Semiconductor Spintronics Project, Al. Lotnikow 32/46, 02-668 Warsaw (Poland)

    2008-06-02

    We report on growth of MnTe layers by molecular beam epitaxy on Al{sub 2}O{sub 3} substrates and of ZnTe layers on hybrid MnTe/Al{sub 2}O{sub 3} substrates. The aim of our work was to prepare hexagonal phases of epitaxial thin films of these two materials. In the case of MnTe, the hexagonal NiAs-type phase was prepared by depositing the film directly on Al{sub 2}O{sub 3} substrates. On the other hand, the crystal structure of ZnTe layers grown on hybrid MnTe/Al{sub 2}O{sub 3} substrates was found to depend on the layer thickness: layers thinner than 0.05 {mu}m grew in a metastable hexagonal wurtzite structure, but with further increases of the thickness, the cubic zinc blende phase of ZnTe tended to appear. The structural properties of MnTe and ZnTe layers were characterized by high energy electron and X-ray diffraction methods. Electrical properties of MnTe films were assessed by the Hall effect measurements. The topography and microstructure were analyzed by atomic force microscope. The Neel temperature and magnetic domains structure of antiferromagnetic hexagonal MnTe layers were obtained from neutron experiments.

  3. Comparisons between tokamak fueling of gas puffing and supersonic molecular beam injection in 2D simulations

    International Nuclear Information System (INIS)

    Plasma fueling with high efficiency and deep injection is very important to enable fusion power performance requirements. It is a powerful and efficient way to study neutral transport dynamics and find methods of improving the fueling performance by doing large scale simulations. Two basic fueling methods, gas puffing (GP) and supersonic molecular beam injection (SMBI), are simulated and compared in realistic divertor geometry of the HL-2A tokamak with a newly developed module, named trans-neut, within the framework of BOUT++ boundary plasma turbulence code [Z. H. Wang et al., Nucl. Fusion 54, 043019 (2014)]. The physical model includes plasma density, heat and momentum transport equations along with neutral density, and momentum transport equations. Transport dynamics and profile evolutions of both plasma and neutrals are simulated and compared between GP and SMBI in both poloidal and radial directions, which are quite different from one and the other. It finds that the neutrals can penetrate about four centimeters inside the last closed (magnetic) flux surface during SMBI, while they are all deposited outside of the LCF during GP. It is the radial convection and larger inflowing flux which lead to the deeper penetration depth of SMBI and higher fueling efficiency compared to GP

  4. Effects of magnesium contents in ZnMgO ternary alloys grown by molecular beam epitaxy

    Energy Technology Data Exchange (ETDEWEB)

    Hu, Sheng-Yao, E-mail: shenghu2729@yahoo.com [Department of Digital Technology Design, Tungfang Design Institute, Hunei, Kaohsiung 82941, Taiwan (China); Chou, Wu-Ching [Department of Electrophysics, National Chiao Tung University, Hsinchu 30010, Taiwan (China); Weng, Yu-Hsiang [Department of Electrical Engineering, National Taiwan Ocean University, Keelung 20224, Taiwan (China)

    2015-07-05

    Highlights: • ZnMgO alloys with different Mg contents have been produced by MBE. • Optical and structural properties have been measured and investigated. • Stress is tensile and is increased as the increasing of Mg contents. • The asymmetric behavior of the Raman mode was influenced due to the Mg contents. - Abstract: Ternary alloys of ZnMgO samples with different magnesium contents have been grown by molecular beam epitaxy on the sapphire substrates. Room temperature photoluminescence energy of ZnMgO shifted as high as 3.677 eV by increasing Mg contents corresponding to the higher Urbach average localization energy which indicates more randomness in the alloys with higher Mg contents. XRD results are also verified that the c-axis length decreases as the increasing Mg contents linking to the increased tensile stress produced by the Mg atoms. Raman spectra analyzed by the spatial correlation model to describe that the linewidth Γ is decreased but the correlation length L is increased as the increasing of Mg contents.

  5. Hybrid molecular beam epitaxy for the growth of stoichiometric BaSnO{sub 3}

    Energy Technology Data Exchange (ETDEWEB)

    Prakash, Abhinav, E-mail: praka019@umn.edu; Dewey, John; Yun, Hwanhui; Jeong, Jong Seok; Mkhoyan, K. Andre; Jalan, Bharat, E-mail: bjalan@umn.edu [Department of Chemical Engineering and Materials Science, University of Minnesota, Minneapolis, Minnesota 55455 (United States)

    2015-11-15

    Owing to its high room-temperature electron mobility and wide bandgap, BaSnO{sub 3} has recently become of significant interest for potential room-temperature oxide electronics. A hybrid molecular beam epitaxy (MBE) approach for the growth of high-quality BaSnO{sub 3} films is developed in this work. This approach employs hexamethylditin as a chemical precursor for tin, an effusion cell for barium, and a radio frequency plasma source for oxygen. BaSnO{sub 3} films were thus grown on SrTiO{sub 3} (001) and LaAlO{sub 3} (001) substrates. Growth conditions for stoichiometric BaSnO{sub 3} were identified. Reflection high-energy electron diffraction (RHEED) intensity oscillations, characteristic of a layer-by-layer growth mode were observed. A critical thickness of ∼1 nm for strain relaxation was determined for films grown on SrTiO{sub 3} using in situ RHEED. Scanning transmission electron microscopy combined with electron energy-loss spectroscopy and energy dispersive x-ray spectroscopy confirmed the cube-on-cube epitaxy and composition. The importance of precursor chemistry is discussed in the context of the MBE growth of BaSnO{sub 3}.

  6. Reaction dynamics of Si(001) oxidation at room temperature induced by supersonic O2 molecular beams

    International Nuclear Information System (INIS)

    Potential energy barriers for dissociative chemisorption of O2 molecules on clean and H2O-preadsorbed Si(001) surfaces were verified using supersonic O2 molecular beams and synchrotron radiation photoemission spectroscopy. The saturated oxygen amount on both kinds of Si(001) surfaces were measured as a function of incident energy of O2 molecules. The saturated oxygen amount was dependent in both cases on the incident energy. Especially, two energy thresholds appeared in the H2O-preadsorbed Si(001) surface oxidation. An Si-2p photoemission spectrum for the oxygen-saturated Si(001) surface formed by O2 gas possessing incident energy below the first threshold on the clean surface revealed the oxygen insertion into backbond sites of Si dimers. The dimer backbonds, however, were not oxidized by O2 irradiation without incident energy larger than 1.0 eV in the H2O-preadsorbed surface. These facts indicate that a chemisorption reaction path of the oxygen insertion into dimer backbonds through bridge and dangling bond sites is open for the clean surface oxidation, and the path is cut by termination of dangling bonds by H and OH radicals. (author)

  7. Current transport in ZnO/Si heterostructure grown by laser molecular beam epitaxy

    Institute of Scientific and Technical Information of China (English)

    Teng Xiao-Yun; Wu Yan-Hua; Yu Wei; Gao Wei; Fu Guang-Sheng

    2012-01-01

    The n-ZnO/p-Si heterojunction was fabricated by depositing high quality single crystalline aluminium-doped n-type ZnO film on p-type Si using the laser molecular beam epitaxy technique. The heterojunction exhibited a good rectifying behavior.The electrical properties of the heterojunction were investigated by means of temperature dependence current density-voltage measurements.The mechanism of the current transport was proposed based on the band structure of the heterojunction.When the applied bias V is lower than 0.15 V,the current follows the Ohmic behavior.When 0.15 V < V < 0.6 V,the transport property is dominated by diffusion or recombination in the junction space charge region,while at higher voltages (V > 0.6 V),the space charge limited effect becomes the main transport mechanism.The current-voltage characteristic under illumination was also investigated.The photovoltage and the short circuit current density of the heterojunction aproached 270 mV and 2.10 mA/cm2,respectively.

  8. Velocity analysis of shock-heated molecular beams by a time-of-flight method

    International Nuclear Information System (INIS)

    Measurements of the mean velocities u sub(infinity) and the velocity distributions of the molecular beams from a shock-heated source have been carried out by a conventional time-of-flight method, and their translational temperatures T sub(parallel)sup(infinity) parallel to the flow direction have been determined. The speed ratios, S sub(parallel)sup(infinity) = (mu sub(infinity)/2kT sub(parallel)sup(infinity))sup(1/2), of 6 - 20 have been obtained in the source temperature range of T0 = 1,400 - 10,800 K and its pressure range of P0 = 1.3 - 6.8 atm for argon. They have been less than the theoretical terminal speed ratios for a free jet. In the present apparatus with a convergentdivergent conical nozzle, the boundary layer from the nozzle wall limits the expansion and results in a decrease of the speed ratio. Although the flow is strongly affected by the background gas in the far downstream from the nozzle exit, higher speed ratios have been obtained. (author)

  9. Silicon sample holder for molecular beam epitaxy on pre-fabricated integrated circuits

    Science.gov (United States)

    Hoenk, Michael E. (Inventor); Grunthaner, Paula J. (Inventor); Grunthaner, Frank J. (Inventor)

    1994-01-01

    The sample holder of the invention is formed of the same semiconductor crystal as the integrated circuit on which the molecular beam expitaxial process is to be performed. In the preferred embodiment, the sample holder comprises three stacked micro-machined silicon wafers: a silicon base wafer having a square micro-machined center opening corresponding in size and shape to the active area of a CCD imager chip, a silicon center wafer micro-machined as an annulus having radially inwardly pointing fingers whose ends abut the edges of and center the CCD imager chip within the annulus, and a silicon top wafer micro-machined as an annulus having cantilevered membranes which extend over the top of the CCD imager chip. The micro-machined silicon wafers are stacked in the order given above with the CCD imager chip centered in the center wafer and sandwiched between the base and top wafers. The thickness of the center wafer is about 20% less than the thickness of the CCD imager chip. Preferably, four titanium wires, each grasping the edges of the top and base wafers, compress all three wafers together, flexing the cantilever fingers of the top wafer to accommodate the thickness of the CCD imager chip, acting as a spring holding the CCD imager chip in place.

  10. Hybrid molecular beam epitaxy for the growth of stoichiometric BaSnO3

    International Nuclear Information System (INIS)

    Owing to its high room-temperature electron mobility and wide bandgap, BaSnO3 has recently become of significant interest for potential room-temperature oxide electronics. A hybrid molecular beam epitaxy (MBE) approach for the growth of high-quality BaSnO3 films is developed in this work. This approach employs hexamethylditin as a chemical precursor for tin, an effusion cell for barium, and a radio frequency plasma source for oxygen. BaSnO3 films were thus grown on SrTiO3 (001) and LaAlO3 (001) substrates. Growth conditions for stoichiometric BaSnO3 were identified. Reflection high-energy electron diffraction (RHEED) intensity oscillations, characteristic of a layer-by-layer growth mode were observed. A critical thickness of ∼1 nm for strain relaxation was determined for films grown on SrTiO3 using in situ RHEED. Scanning transmission electron microscopy combined with electron energy-loss spectroscopy and energy dispersive x-ray spectroscopy confirmed the cube-on-cube epitaxy and composition. The importance of precursor chemistry is discussed in the context of the MBE growth of BaSnO3

  11. Radical-source molecular beam epitaxy of ZnO-based heterostructures

    Energy Technology Data Exchange (ETDEWEB)

    Sadofiev, Sergey

    2009-10-27

    This work focuses on the development of the novel growth approaches for the fabrication of Group II-oxide materials in the form of epitaxial films and heterostructures. It is shown that molecular-beam epitaxial growth far from thermal equilibrium allows one to overcome the standard solubility limit and to alloy ZnO with MgO or CdO in strict wurtzite phase up to mole fractions of several 10 %. In this way, a band-gap range from 2.2 to 4.4 eV can be covered. A clear layer-by-layer growth mode controlled by oscillations in reflection high-energy electron diffraction makes it possible to fabricate atomically smooth heterointerfaces and well-defined quantum well structures exhibiting prominent band-gap related light emission in the whole composition range. On appropriately designed structures, laser action from the ultraviolet down to green wavelengths and up to room temperature is achieved. The properties and potential of the ''state-of-the-art'' materials are discussed in relation to the advantages for their applications in various optoelectronic devices. (orig.)

  12. Photodissociation of alkyl nitrites in a molecular beam. Primary and secondary reactions

    International Nuclear Information System (INIS)

    The translational energy distributions P(ET) for the 248-nm photodissociation products (NO + RO) of isopropyl nitrite and tert-butyl nitrite have been measured with a molecular beam time-of-flight (TOF) apparatus. Previous experiments with methyl nitrite and ethyl nitrite have been repeated with higher resolution. The average photofragment translational energies of these four alkyl nitrites are in good agreement with those predicted by an impulsive model that treats the NO as a rigid fragment and the alkoxy radical as a soft fragment. Hence, and in contrast to the vibrational predissociation on the S1 potential energy surface, S2 dissociation is direct and involves no significant vibrational-translational coupling between the reaction coordinate rO-N and the rNdouble-bondO coordinate. The width of the experimental P(ET) distributions decreases with increasing size of the alkoxy substituent. This result is discussed in terms of an anticorrelation between the internal energies of a fragment pair. Furthermore, the spontaneous secondary dissociation of isopropoxy and tert-butoxy photofragments was observed which yields CH3 radicals and acetaldehyde or acetone, respectively. The unimolecular decay of these alkoxy radicals confirms their relatively high internal energy as deduced from the primary P(ET) and it is shown that this decay occurs on a submicrosecond time scale

  13. A GaAs/GaInP dual junction solar cell grown by molecular beam epitaxy

    International Nuclear Information System (INIS)

    We report the recent result of GaAs/GaInP dual-junction solar cells grown by all solid-state molecular-beam-epitaxy (MBE). The device structure consists of a GaIn0.48P homojunction grown epitaxially upon a GaAs homojunction, with an interconnected GaAs tunnel junction. A photovoltaic conversion efficiency of 27% under the AM1.5 globe light intensity is realized for a GaAs/GaInP dual-junction solar cell, while the efficiencies of 26% and 16.6% are reached for a GaAs bottom cell and a GaInP top cell, respectively. The energy loss mechanism of our GaAs/GaInP tandem dual-junction solar cells is discussed. It is demonstrated that the MBE-grown phosphide-containing III—V compound semiconductor solar cell is very promising for achieving high energy conversion efficiency. (semiconductor devices)

  14. Photoluminescence of localized excitons in ZnCdO thin films grown by molecular beam epitaxy

    Science.gov (United States)

    Wu, T. Y.; Huang, Y. S.; Hu, S. Y.; Lee, Y. C.; Tiong, K. K.; Chang, C. C.; Shen, J. L.; Chou, W. C.

    2016-07-01

    We have investigated the luminescence characteristics of Zn1-xCdxO thin films with different Cd contents grown by molecular beam epitaxy system. The temperature-dependent photoluminescence (PL) and excitation power-dependent PL spectra were measured to clarify the luminescence mechanisms of the Zn1-xCdxO thin films. The peak energy of the Zn1-xCdxO thin films with increasing the Cd concentration is observed as redshift and can be fitted by the quadratic function of alloy content. The broadened full-width at half-maximum (FWHM) estimated from the 15 K PL spectra as a function of Cd content shows a larger deviation between the experimental values and theoretical curve, which indicates that experimental FWHM values are affected not only by alloy compositional disorder but also by localized excitons occupying states in the tail of the density of states. The Urbach energy determined from an analysis of the lineshape of the low-energy side of the PL spectrum and the degree of localization effect estimated from the temperature-induced S-shaped PL peak position described an increasing mean exciton-localization effects in ZnCdO films with increasing the Cd content. In addition, the PL intensity and peak position as a function of excitation power are carried out to clarify the types of radiative recombination and the effects of localized exciton in the ZnCdO films with different Cd contents.

  15. Strain-Engineered Graphene Grown on Hexagonal Boron Nitride by Molecular Beam Epitaxy

    Science.gov (United States)

    Summerfield, Alex; Davies, Andrew; Cheng, Tin S.; Korolkov, Vladimir V.; Cho, YongJin; Mellor, Christopher J.; Foxon, C. Thomas; Khlobystov, Andrei N.; Watanabe, Kenji; Taniguchi, Takashi; Eaves, Laurence; Novikov, Sergei V.; Beton, Peter H.

    2016-01-01

    Graphene grown by high temperature molecular beam epitaxy on hexagonal boron nitride (hBN) forms continuous domains with dimensions of order 20 μm, and exhibits moiré patterns with large periodicities, up to ~30 nm, indicating that the layers are highly strained. Topological defects in the moiré patterns are observed and attributed to the relaxation of graphene islands which nucleate at different sites and subsequently coalesce. In addition, cracks are formed leading to strain relaxation, highly anisotropic strain fields, and abrupt boundaries between regions with different moiré periods. These cracks can also be formed by modification of the layers with a local probe resulting in the contraction and physical displacement of graphene layers. The Raman spectra of regions with a large moiré period reveal split and shifted G and 2D peaks confirming the presence of strain. Our work demonstrates a new approach to the growth of epitaxial graphene and a means of generating and modifying strain in graphene. PMID:26928710

  16. Effects of magnesium contents in ZnMgO ternary alloys grown by molecular beam epitaxy

    International Nuclear Information System (INIS)

    Highlights: • ZnMgO alloys with different Mg contents have been produced by MBE. • Optical and structural properties have been measured and investigated. • Stress is tensile and is increased as the increasing of Mg contents. • The asymmetric behavior of the Raman mode was influenced due to the Mg contents. - Abstract: Ternary alloys of ZnMgO samples with different magnesium contents have been grown by molecular beam epitaxy on the sapphire substrates. Room temperature photoluminescence energy of ZnMgO shifted as high as 3.677 eV by increasing Mg contents corresponding to the higher Urbach average localization energy which indicates more randomness in the alloys with higher Mg contents. XRD results are also verified that the c-axis length decreases as the increasing Mg contents linking to the increased tensile stress produced by the Mg atoms. Raman spectra analyzed by the spatial correlation model to describe that the linewidth Γ is decreased but the correlation length L is increased as the increasing of Mg contents

  17. Production and detection of neutral molecular beams : from single amino acids to biomolecular complexes

    International Nuclear Information System (INIS)

    This thesis presents a laser desorption source for neutral organic molecules and clusters as well as the first exploration of a superconducting single photon detector for the detection of massive neutral particles. Whereas the source can produce beams of biomolecules for various gas-phase applications, the detector can be used to overcome the current post- ionization detection mass limit of neutral molecules. The aim of our work is to produce and detect neutral molecular gas-phase beams, ranging from small amino acids overlarge polypeptides to massive complexes. The purpose of creating these beams is to use them for quantum optics experiments, like near field matter wave interference and its applications in metrology. Standard effusive sources usually lack the ability to cool the evaporated organic molecules fast enough to prevent fragmentation. In contrast to that, the presented laser desorption source cools the initially evaporated molecules by embedding them into a supersonic seed gas beam. The mixing of the seed gas and the desorbed molecules is implemented both in free expansion as well as inside a closed mixing channel. The desorbed neutral molecules are detected by photo-ionization using UV (266 nm) and FUV (157 nm) light followed by time-of-flight mass spectrometry. For the amino acid tryptophan (204amu) and for the antibiotic polypeptide gramicidin (1884amu) the ion yields for both photo-ionization wavelengths are examined and the ionization cross sections for the UV wavelength are measured. In case of tryptophan the ionization yield is comparable for both wavelengths, whereas gramicidin is detected fifteen times more efficiently under VUV ionization than for UV ionization at equal intensity. Desorption of heavier molecules than gramicidin never resulted in a detectable ion yield, which confirms the known inefficiency for the post-ionization of isolated large organic molecules [1-3]. The desorption source is also used for the formation of large neutral

  18. Selective area growth of a- and c-plane GaN nanocolumns by molecular beam epitaxy using colloidal nanolithography

    OpenAIRE

    Bengoechea-Encabo, A.; S. Albert; Sanchez-Garcia, M.A.; López, L.L.; Estradé, S.; Rebled, J.M.; Peiró, F.; Nataf, G.; De Mierry, P.; Zuniga-Perez, J.; E. Calleja

    2012-01-01

    Selective area growth of a-plane GaN nanocolumns by molecular beam epitaxy was performed for the first time on a-plane GaN templates. Ti masks with 150 nm diameter nanoholes were fabricated by colloidal lithography, an easy, fast and cheap process capable to handle large areas. Even though colloidal lithography does not provide a perfect geometrical arrangement like e-beam lithography, it produces a very homogeneous mask in terms of nanohole diameter and density, and is used here for the firs...

  19. Integration of biaxally aligned conducting oxides with silicon using ion-beam assisted deposited MgO templates

    Energy Technology Data Exchange (ETDEWEB)

    Park, B. H. (Bae Ho); Groves, J. R. (James R.); DePaula, R. F. (Raymond Felix); Jia, Quanxi; Arendt, P. N. (Paul N.); Emmert, L. A. (Luke A.)

    2001-01-01

    Two conducting oxides, La{sub 0.5}Sr{sub 0.5}CoO{sub 3}(LSCO) and SrRuO{sub 3}, were deposited by pulsed laser ablation onto silicon substrates coated with biaxially textured MgO on an amorphous silicon nitride isolation layer. Comparison is made between templates using just 10 nm of ion-beam assisted deposited (IBAD) MgO and substrates with an additional 100 nm of homoepitaxial MgO. Both of these conducting oxide layers exhibited in-plane and out-of-plane texture, on the order of that obtained by the underlying MgO. The SrRuO{sub 3} was c-axis oriented on both substrates, but exhibited a slightly sharper out-of-plane texture when the homoepitaxial MgO layer was included. On the other hand, the LSCO showed only (100) orientation when deposited directly on the IBAD-MgO templates, whereas a significant (110) peak was observed for films on the homoepitaxial MgO. A simple calculation of the distribution of grain boundary angles, assuming a normal distribution of grains, is also presented.

  20. Effect of substrate temperature on the texture of MgO films grown by ion beam assisted deposition

    International Nuclear Information System (INIS)

    In this paper, the role of substrate temperature in the crystalline texture of MgO films grown by ion beam assisted deposition (IBAD) is investigated. This study reveals that the best in-plane alignment for MgO films grown on Y2O3/Si is obtained at ∼25 deg. C. At this temperature, MgO films with an in-plane orientation distribution as low as 3.70 full width at half maximum (FWHM) have been attained. MgO films deposited at temperatures higher than 100 deg. C have broad in-plane alignment. Although the deposition at the lowest temperature (-150 deg. C) did not improve the in-plane texture, the acceptable deviation from the optimum ion to molecule ratio for achieving biaxially textured films was the largest. As a trend, the acceptable ion to molecule deviation decreases with increasing substrate temperature. This study is especially important for continuous IBAD MgO depositions where less restrictive conditions are desired

  1. Effect of substrate temperature on the texture of MgO films grown by ion beam assisted deposition

    Energy Technology Data Exchange (ETDEWEB)

    Stan, Liliana; Arendt, Paul N; DePaula, Raymond F; Usov, Igor O; Groves, James R [Superconductivity Technology Center, Los Alamos National Laboratory, Los Alamos, NM 87545 (United States)

    2006-04-15

    In this paper, the role of substrate temperature in the crystalline texture of MgO films grown by ion beam assisted deposition (IBAD) is investigated. This study reveals that the best in-plane alignment for MgO films grown on Y{sub 2}O{sub 3}/Si is obtained at {approx}25 deg. C. At this temperature, MgO films with an in-plane orientation distribution as low as 3.7{sup 0} full width at half maximum (FWHM) have been attained. MgO films deposited at temperatures higher than 100 deg. C have broad in-plane alignment. Although the deposition at the lowest temperature (-150 deg. C) did not improve the in-plane texture, the acceptable deviation from the optimum ion to molecule ratio for achieving biaxially textured films was the largest. As a trend, the acceptable ion to molecule deviation decreases with increasing substrate temperature. This study is especially important for continuous IBAD MgO depositions where less restrictive conditions are desired.

  2. Enhanced activity and interfacial durability study of ultra low Pt based electrocatalysts prepared by ion beam assisted deposition (IBAD) method

    International Nuclear Information System (INIS)

    Ultra low loading noble metal (0.04-0.12 mgPt/cm2) based electrodes were obtained by direct metallization of non-catalyzed gas diffusion layers via dual ion beam assisted deposition (IBAD) method. Fuel cell performance results reported earlier indicate significant improvements in terms of mass specific power density of 0.297 gPt/kW with 250 A thick IBAD deposit (0.04 mgPt/cm2 for a total MEA loading of 0.08 mgPt/cm2) at 0.65 V in contrast to the state of the art power density of 1.18 gPt/kW using 1 mgPt(MEA)/cm2 at 0.65 V. In this article we report the peroxide radical initiated attack of the membrane electrode assembly utilizing IBAD electrodes in comparison to commercially available E-TEK (now BASF Fuel Cell GmbH) electrodes and find the pathway of membrane degradation as well. A novel segmented fuel cell is used for this purpose to relate membrane degradation to peroxide generation at the electrode/electrolyte interface by means of systematic pre and post analyses of the membrane are presented. Also, we present the results of in situ X-ray absorption spectroscopy (XAS) experiments to elucidate the structure/property relationships of these electrodes that lead to superior performance in terms of gravimetric power density obtained during fuel cell operation.

  3. Approaching Defect-free Amorphous Silicon Nitride by Plasma-assisted Atomic Beam Deposition for High Performance Gate Dielectric.

    Science.gov (United States)

    Tsai, Shu-Ju; Wang, Chiang-Lun; Lee, Hung-Chun; Lin, Chun-Yeh; Chen, Jhih-Wei; Shiu, Hong-Wei; Chang, Lo-Yueh; Hsueh, Han-Ting; Chen, Hung-Ying; Tsai, Jyun-Yu; Lu, Ying-Hsin; Chang, Ting-Chang; Tu, Li-Wei; Teng, Hsisheng; Chen, Yi-Chun; Chen, Chia-Hao; Wu, Chung-Lin

    2016-01-01

    In the past few decades, gate insulators with a high dielectric constant (high-k dielectric) enabling a physically thick but dielectrically thin insulating layer, have been used to replace traditional SiOx insulator and to ensure continuous downscaling of Si-based transistor technology. However, due to the non-silicon derivative natures of the high-k metal oxides, transport properties in these dielectrics are still limited by various structural defects on the hetero-interfaces and inside the dielectrics. Here, we show that another insulating silicon compound, amorphous silicon nitride (a-Si3N4), is a promising candidate of effective electrical insulator for use as a high-k dielectric. We have examined a-Si3N4 deposited using the plasma-assisted atomic beam deposition (PA-ABD) technique in an ultra-high vacuum (UHV) environment and demonstrated the absence of defect-related luminescence; it was also found that the electronic structure across the a-Si3N4/Si heterojunction approaches the intrinsic limit, which exhibits large band gap energy and valence band offset. We demonstrate that charge transport properties in the metal/a-Si3N4/Si (MNS) structures approach defect-free limits with a large breakdown field and a low leakage current. Using PA-ABD, our results suggest a general strategy to markedly improve the performance of gate dielectric using a nearly defect-free insulator. PMID:27325155

  4. Application of computer-assisted molecular modeling (CAMM) for immunoassay of low molecular weight food contaminants: A review

    Science.gov (United States)

    Immunoassay for low molecular weight food contaminants, such as pesticides, veterinary drugs, and mycotoxins is now a well-established technique which meets the demands for a rapid, reliable, and cost-effective analytical method. However, due to limited understanding of the fundamental aspects of i...

  5. Effect of electron beam radiation on the structure and mechanical properties of ultra high molecular weight polyethylene fibers

    International Nuclear Information System (INIS)

    Ultra high molecular weight polyethylene fibers have been crosslinked by electron beam. The structure and mechanical properties of them have been investigated in different irradiation atmospheres. The obtained results show that the gel content and crosslinking density increase with the increase of dose, the swelling ratio and average molecular weight of crosslinked net decrease with the increase of dose, the tensile strength and failure elongation decrease with the increase of dose, the tensile modulus increases with the increase of dose. When the samples are irradiated in air, vacuum and acetylene atmospheres, the effect of irradiation in acetylene atmosphere is best

  6. A two-color tunable infrared/vacuum ultraviolet spectrometer for high-resolution spectroscopy of molecules in molecular beams

    International Nuclear Information System (INIS)

    We describe here the key technical elements of a two-color tunable IR/VUV photoionization TOF mass spectrometer system which allows a wide-range of high-resolution experiments to be performed on a diverse range of cold molecules and clusters in a molecular beam. In particular we highlight the methods we have applied to provide efficient wavelength separation of the VUV radiation from the longer wavelength components used to generate it and discuss a number of systems that we have studied with the instrument which highlight its flexibility for use in the study of molecular spectroscopy.

  7. Self-corrected sensors based on atomic absorption spectroscopy for atom flux measurements in molecular beam epitaxy

    International Nuclear Information System (INIS)

    A high sensitivity atom flux sensor based on atomic absorption spectroscopy has been designed and implemented to control electron beam evaporators and effusion cells in a molecular beam epitaxy system. Using a high-resolution spectrometer and a two-dimensional charge coupled device detector in a double-beam configuration, we employ either a non-resonant line or a resonant line with low cross section from the same hollow cathode lamp as the reference for nearly perfect background correction and baseline drift removal. This setup also significantly shortens the warm-up time needed compared to other sensor technologies and drastically reduces the noise coming from the surrounding environment. In addition, the high-resolution spectrometer allows the most sensitive resonant line to be isolated and used to provide excellent signal-to-noise ratio

  8. A molecular-beam study of the dissociative chemisorption of O2 on Ir(110)-(1×2)

    OpenAIRE

    Mullins, C B; Wang, Y.; Weinberg, W. H.

    1989-01-01

    The zero-coverage probability of dissociative chemisorption of O2 on Ir(110)-(1×2) has been measured using molecular-beam techniques for a wide range of incident kinetic energies, incident angles, and surface temperatures. The data indicate that a trapping-mediated mechanism is responsible for dissociative chemisorption at low energies, whereas at high energies a direct mechanism accounts for dissociative adsorption. Total energy scaling approximately describes the dissociative dynamics on th...

  9. Balmer-series emission cross-sections for the interaction between hydrogen neutral beams and molecular hydrogen: an annotated bibliography

    International Nuclear Information System (INIS)

    A detailed study of Balmer emission cross-sections in the interaction between hydrogen neutral beams and molecular hydrogen is presented. The relative importance of different processes leading to excited neutrals is reviewed. The effect of external perturbations on the excited levels of a neutral atom is taken into account. Finally an 'effective cross section' for the production of Doppler shifted and unshifted Hsub(α) emission line is proposed

  10. Comparison of Morphology Evolution of Ge(001) Homoepitaxial Films Grown by Pulsed Laser Deposition and Molecular Beam Epitaxy

    OpenAIRE

    McCamy, James W.; Shin, Byungha; Leonard, John P.; Aziz, Michael

    2005-01-01

    Using a dual Molecular Beam Epitaxy (MBE)-Pulsed Laser Deposition (PLD) Ultra-High Vacuum chamber, we have conducted the first experiments under identical thermal, background, and surface preparation conditions to compare Ge(001) homoepitaxial growth morphology in PLD and MBE. We find that in PLD with low kinetic energy and in MBE the film morphology evolves in a similar fashion: initially irregularly shaped mounds form, followed by pyramidal mounds with edges of the square-base along direc...

  11. Comparison of Cherenkov excited fluorescence and phosphorescence molecular sensing from tissue with external beam irradiation

    Science.gov (United States)

    Lin, Huiyun; Zhang, Rongxiao; Gunn, Jason R.; Esipova, Tatiana V.; Vinogradov, Sergei; Gladstone, David J.; Jarvis, Lesley A.; Pogue, Brian W.

    2016-05-01

    Ionizing radiation delivered by a medical linear accelerator (LINAC) generates Cherenkov emission within the treated tissue. A fraction of this light, in the 600–900 nm wavelength region, propagates through centimeters of tissue and can be used to excite optical probes in vivo, enabling molecular sensing of tissue analytes. The success of isolating the emission signal from this Cherenkov excitation background is dependent on key factors such as: (i) the Stokes shift of the probe spectra; (ii) the excited state lifetime; (iii) the probe concentration; (iv) the depth below the tissue surface; and (v) the radiation dose used. Previous studies have exclusively focused on imaging phosphorescent dyes, rather than fluorescent dyes. However there are only a few biologically important phosphorescent dyes and yet in comparison there are thousands of biologically relevant fluorescent dyes. So in this study the focus was a study of efficacy of Cherenkov-excited luminescence using fluorescent commercial near-infrared probes, IRDye 680RD, IRDye 700DX, and IRDye 800CW, and comparing them to the well characterized phosphorescent probe Oxyphor PtG4, an oxygen sensitive dye. Each probe was excited by Cherenkov light from a 6 MV external radiation beam, and measured in continuous wave or time-gated modes. The detection was performed by spectrally resolving the luminescence signals, and measuring them with spectrometer-based separation on an ICCD detector. The results demonstrate that IRDye 700DX and PtG4 allowed for the maximal signal to noise ratio. In the case of the phosphorescent probe, PtG4, with emission decays on the microsecond (μs) time scale, time-gated acquisition was possible, and it allowed for higher efficacy in terms of the probe concentration and detection depth. Phantoms containing the probe at 5 mm depth could be detected at concentrations down to the nanoMolar range, and at depths into the tissue simulating phantom near 3 cm. In vivo studies showed that 5

  12. Comparison of Cherenkov excited fluorescence and phosphorescence molecular sensing from tissue with external beam irradiation.

    Science.gov (United States)

    Lin, Huiyun; Zhang, Rongxiao; Gunn, Jason R; Esipova, Tatiana V; Vinogradov, Sergei; Gladstone, David J; Jarvis, Lesley A; Pogue, Brian W

    2016-05-21

    Ionizing radiation delivered by a medical linear accelerator (LINAC) generates Cherenkov emission within the treated tissue. A fraction of this light, in the 600-900 nm wavelength region, propagates through centimeters of tissue and can be used to excite optical probes in vivo, enabling molecular sensing of tissue analytes. The success of isolating the emission signal from this Cherenkov excitation background is dependent on key factors such as: (i) the Stokes shift of the probe spectra; (ii) the excited state lifetime; (iii) the probe concentration; (iv) the depth below the tissue surface; and (v) the radiation dose used. Previous studies have exclusively focused on imaging phosphorescent dyes, rather than fluorescent dyes. However there are only a few biologically important phosphorescent dyes and yet in comparison there are thousands of biologically relevant fluorescent dyes. So in this study the focus was a study of efficacy of Cherenkov-excited luminescence using fluorescent commercial near-infrared probes, IRDye 680RD, IRDye 700DX, and IRDye 800CW, and comparing them to the well characterized phosphorescent probe Oxyphor PtG4, an oxygen sensitive dye. Each probe was excited by Cherenkov light from a 6 MV external radiation beam, and measured in continuous wave or time-gated modes. The detection was performed by spectrally resolving the luminescence signals, and measuring them with spectrometer-based separation on an ICCD detector. The results demonstrate that IRDye 700DX and PtG4 allowed for the maximal signal to noise ratio. In the case of the phosphorescent probe, PtG4, with emission decays on the microsecond (μs) time scale, time-gated acquisition was possible, and it allowed for higher efficacy in terms of the probe concentration and detection depth. Phantoms containing the probe at 5 mm depth could be detected at concentrations down to the nanoMolar range, and at depths into the tissue simulating phantom near 3 cm. In vivo studies showed that 5

  13. Computer-Assisted Drug Design: Genetic Algorithms and Structures of Molecular Clusters of Aromatic Hydrocarbons and Actinomycin D-Deoxyguanosine

    Science.gov (United States)

    Xiao, Yong Liang

    Molecular packing, clustering, and docking computations have been performed by empirical intermolecular energy minimization methods. The main focus of this study is finding a robust global search algorithm to solve intermolecular interaction problems, especially to apply an efficient algorithm to large-scale complex molecular systems such as drug-DNA binding or site selectivity which has increasing importance in drug design and drug discovery. Molecular packing in benzene, naphthalene, and anthracene crystals is analyzed in terms of molecular dimer interaction. Intermolecular energies of the gas dimer molecules are calculated for various intermolecular distances and orientations using empirical potential energy functions. The gas dimers are compared to pairs of molecules extracted from the observed crystal structures. Net atomic charges are obtained by the potential-derived method from 6-31G and 6-31G^{**} level ab initio wavefunctions. A new approach using a genetic algorithm is applied to predict structures of benzene, naphthalene, and anthracene molecular clusters. The computer program GAME (genetic algorithm for minimization of energy) has been developed to obtain the global energy minimum of clusters of dimer, trimer, and tetramer molecules. This test model has been further developed to applications of molecular docking. Docking calculations of deoxyguanosine molecules to actinomycin D were performed successfully to identify the binding sites of the drug molecule, which was revealed by actinomycin D-deoxyguanosine complex from the solved x-ray crystal structure. The comparison between the evolutionary computing method and conventional local optimization methods concluded that genetic algorithms are very competitive when it comes to complex, large-scale optimization. Full power of genetic algorithms can be unveiled in computer-assisted drug design only when the difficulties of including optimized molecular conformation in the algorithm are overcome. These

  14. On the possibility of measuring the q-profile in dense plasmas by means of molecular beams

    International Nuclear Information System (INIS)

    A method of measuring the q-profile (slightly off the centre) in a plasma is described in detail. Radially injected molecular neutrals are ionized in the plasma and rotate according to the local magnetic field. After dissociation the neutral atom carries the information on the velocity of the molecular ion at the time of dissociation to a neutral particle analyzer. In this paper it is shown how this information can be used to calculate the local field. The production and penetration of molecular beams are discussed as well as the requirements to be met by the beam and analyzer. Also discussed are the possibility and influence of neutral atom beams and their possible relevance to the same type of measurement. It is shown that the Shafranov shift can be determined by suitable choices of the injection and detection geometries. The method seems to be especially suited to measuring the time variation of local q-values with a time resolution of about 1 ms. Although the penetration of the particles depends on the plasma conditions, the quantity measured by the method discussed only depends on the local field ratio. It is shown that the method could also be applied in large plasma experiments the size of JET, and that an accuracy in measuring q of better than or about 10% may be achieved. (orig.)

  15. Effect of supersonic molecular-beam injection on edge fluctuation and particle transport in Heliotron J

    Energy Technology Data Exchange (ETDEWEB)

    Zang, L., E-mail: l-zang@center.iae.kyoto-u.ac.jp; Kasajima, K.; Hashimoto, K.; Kenmochi, N. [Graduate School of Energy Science, Kyoto University, Uji 611-0011 (Japan); Ohshima, S.; Mizuuchi, T.; Yamamoto, S.; Sha, M.; Nagasaki, K.; Kado, S.; Okada, H.; Minami, T.; Kobayashi, S.; Shi, N.; Konoshima, S.; Nakamura, Y.; Sano, F. [Institute of Advanced Energy, Kyoto University, Gokasho, Uji 611-0011 (Japan); Nishino, N. [Graduate School of Engineering, Hiroshima University, Higashihiroshima 739-8527 (Japan); Takeuchi, M. [Naka Fusion Institute, Japan Atomic Energy Agency, Naka 311-0193 (Japan); Mukai, K. [National Institute for Fusion Science, Toki 509-5292 (Japan); and others

    2014-04-15

    Edge fluctuation in a supersonic molecular-beam injection (SMBI) fueled plasma has been measured using an electrostatic probe array. After SMBI, the plasma stored energy (W{sub p}) temporarily decreased then started to increase. The local plasma fluctuation and fluctuation induced particle transport before and after SMBI have been analyzed. In a short duration (∼4 ms) just after SMBI, the density fluctuation of broad-band low frequency increased, and the probability density function (PDF) changed from a nearly Gaussian to a positively skewed non-Gaussian one. This suggests that intermittent structures were produced due to SMBI. Also the fluctuation induced particle transport was greatly enhanced during this short duration. About 4 ms after SMBI, the low frequency broad-band density fluctuation decreased, and the PDF returned to a nearly Gaussian shape. Also the fluctuation induced particle transport was reduced. Compared with conventional gas puff, W{sub p} degradation window is very short due to the short injection period of SMBI. After this short degradation window, fluctuation induced particle transport was reduced and W{sub p} started the climbing phase. Therefore, the short period of the influence to the edge fluctuation might be an advantage of this novel fueling technique. On the other hand, although their roles are not identified at present, coherent MHD modes are also suppressed as well by the application of SMBI. These MHD modes are thought to be de-exited due to a sudden change of the edge density and/or excitation conditions.

  16. Isotype InGaN/GaN heterobarrier diodes by ammonia molecular beam epitaxy

    Energy Technology Data Exchange (ETDEWEB)

    Fireman, Micha N.; Browne, David A.; Speck, James S. [Materials Department, University of California, Santa Barbara, California 93106 (United States); Mishra, Umesh K. [Electrical and Computer Engineering Department, University of California, Santa Barbara, California 93106 (United States)

    2016-02-07

    The design of isotype InGaN/GaN heterobarrier diode structures grown by ammonia molecular beam epitaxy is presented. On the (0001) Ga-polar plane, a structure consisting of a surface n{sup +} GaN contact layer, followed by a thin InGaN layer, followed by a thick unintentionally doped (UID) GaN layer, and atop a buried n{sup +} GaN contact layer induces a large conduction band barrier via a depleted UID GaN layer. Suppression of reverse and subthreshold current in such isotype barrier devices under applied bias depends on the quality of this composite layer polarization. Sample series were grown under fixed InGaN growth conditions that varied either the UID GaN NH{sub 3} flow rate or the UID GaN thickness, and under fixed UID GaN growth conditions that varied InGaN growth conditions. Decreases in subthreshold current and reverse bias current were measured for thicker UID GaN layers and increasing InGaN growth rates. Temperature-dependent analysis indicated that although extracted barrier heights were lower than those predicted by 1D Schrödinger Poisson simulations (0.9 eV–1.4 eV for In compositions from 10% to 15%), optimized growth conditions increased the extracted barrier height from ∼11% to nearly 85% of the simulated values. Potential subthreshold mechanisms are discussed, along with those growth factors which might affect their prevalence.

  17. Protective Sliding Carbon-Based Nanolayers Prepared by Argon or Nitrogen Ion-Beam Assisted Deposition on Ti6Al4V Alloy

    Directory of Open Access Journals (Sweden)

    Petr Vlcak

    2016-01-01

    Full Text Available The microstructure and the surface properties of samples coated by carbon-based nanolayer were investigated in an effort to increase the surface hardness and reduce the coefficient of friction of the Ti6Al4V alloy. Protective carbon-based nanolayers were fabricated by argon or nitrogen ion-beam assisted deposition at ion energy of 700 eV on Ti6Al4V substrates. The Raman spectra indicated that nanolayers had a diamond-like carbon character with sp2 rich bonds. The TiC and TiN compounds formed in the surface area were detected by X-ray diffraction. Nanoscratch tests showed increased adhesion of a carbon-based nanolayer deposited with ion assistance in comparison with a carbon nanolayer deposited without ion assistance. The results showed that argon ion assistance leads to greater nanohardness than a sample coated by a carbon-based nanolayer with nitrogen ion assistance. A more than twofold increase in nanohardness and a more than fivefold decrease in the coefficient of friction were obtained for samples coated by a carbon-based nanolayer with ion assistance, in comparison with the reference sample.

  18. Surfactant-assisted intercalation of high molecular weight poly(ethylene oxide) into vanadyl phosphate di-hydrate

    International Nuclear Information System (INIS)

    Graphical abstract: CuKα X-ray diffraction patterns of the VOPO4/PEO (A) e VOPO4/CTA (B) and VOPO4/CTA/PEO (C). Highlights: ► VOPO4/PEO has been synthesized by using CTAB, thereby improving PEO intercalation. ► The d-spacing increase from 1.30 nm (VOPO4/PEO) to 2.94 nm (VOPO4/CTA/PEO). ► This strategy was viable for intercalation of PEO with high molecular weight. -- Abstract: A high molecular weight poly(ethylene oxide)/layered vanadyl phosphate di-hydrate intercalation compound was synthesized via the surfactant-assisted approach. Results confirmed that surfactant molecules were replaced with the polymer, while the lamellar structure of the matrix was retained, and that the material presents high specific surface area. In addition, intercalation produced a more thermally stable polymer as evidenced by thermal analysis.

  19. Mechanical properties and thermal stability of TiAlN/Ta multilayer film deposited by ion beam assisted deposition

    International Nuclear Information System (INIS)

    Highlights: • Nanohardness of the TiAlN/Ta multilayer film was 29% higher than that of the TiAlN monolayer film. • Compared to the TiAlN monolayer film, a 47% increase of elastic modulus was achieved. • Bonding strength of the TiAlN/Ta multilayer film was higher than that of the TiAlN monolayer film. • The TiAlN/Ta multilayer film has better thermal stability than the TiAlN monolayer film. - Abstract: TiAlN/Ta multilayer film with the total thickness of 2 μm was deposited onto silicon (1 0 0) wafer by ion beam assisted deposition using Ti0.5Al0.5 and Ta as the target materials. Observation of the cross-sectional microstructure and XRD pattern showed that the Ta sub-layer restrained the growth of TiAlN crystal, and decreased the grain size. Nanohardness (H) of the TiAlN/Ta multilayer film was 29% higher and the elastic modulus (E) was 47% higher than that of the TiAlN monolayer film. The critical fracture load (Lc) of 72 mN for the TiAlN/Ta multilayer film was achieved, much higher than that of the monolayer TiAlN film (30 mN), indicated a significant increase of bonding strength. Results of DSC analysis indicated that the TiAlN/Ta multilayer film had the exothermic peak at around 935 °C, 75 °C above that for the TiAlN monolayer film. Existence of the Ta sub-layers behaved as the barrier layers to prevent oxygen from diffusing into inner layers, resulted in the improvement of thermal stability

  20. STM tip-assisted engineering of molecular nanostructures: PTCDA islands on Ge(001):H surfaces

    OpenAIRE

    Ahmad Zebari, Amir A; Marek Kolmer; Prauzner-Bechcicki, Jakub S.

    2013-01-01

    Islands composed of perylene-3,4,9,10-tetracarboxylic dianhydride (PTCDA) molecules are grown on a hydrogen passivated Ge(001):H surface. The islands are studied with room temperature scanning tunneling microscopy and spectroscopy. The spontaneous and tip-induced formation of the top-most layer of the island is presented. Assistance of the scanning probe seems to be one of the factors that facilitate and speed the process of formation of the top-most layer.