WorldWideScience

Sample records for assisted chemical vapour

  1. Plasma assisted chemical vapour deposition for optical coatings

    International Nuclear Information System (INIS)

    Full text: Plasma assisted chemical vapour deposition (PECVD) is commonly used in semiconductor fabrication plants for depositing layers of dielectric materials. Reactive gasses are admitted to a chamber at low pressure and applying an electric field, usually a RF field, generates a plasma. The gasses react to form a solid material on the walls of the chamber and substrates. In this project we are exploring the possibility of applying this method to the growth of multilayer optical thin films. A small prototype system was constructed and optical multi layers of up to 24 layers were deposited over a diameter of 90 mm. The system uses 13.56 MHz RF to generate the plasma in a simple capacitive plate chamber. The gasses used were silane, oxygen and nitrogen. This allows SiO2 (RI 1.45) and Si3N4 (RI 1.93) to be deposited. Multilayer coatings were designed using these materials on TFCalc. The required thickness for the various layers were tabulated and fed into a computer controlling the gas flow during deposition. In this way the structures were deposited semi-automatically. The growing films were monitored using a spectrometer looking at light reflected from the growing film over a range from 400 - 800 nm simultaneously. This data was then used to reconstruct the deposition and analyze deviations from the design. An SEM micrograph of the cross-section of the multilayers was used to obtain relative thicknesses of the individual layers. Other structures deposited include rugate notch filters, coloured filters and broad band anti-reflection layers. Running the prototype has proved the concept and the project has moved to a scale up stage in which a larger version is being constructed at Avtronics Pty Ltd. This aims to coat uniformly over a diameter of 600 mm. Initially, the same materials will be used to produce coatings but fixture work will increase the refractive index range of materials which can be deposited and fully automate the coating process. (authors)

  2. Electric field assisted aerosol assisted chemical vapour deposition of nanostructured metal oxide thin films

    International Nuclear Information System (INIS)

    Nanostructured thin films of tungsten, vanadium and titanium oxides were deposited on gas sensor substrates from the electric field assisted chemical vapour deposition reaction of tungsten hexaphenoxide, vanadyl acetylacetonate and titanium tetraisopropoxide respectively. The electric fields were generated by applying a potential difference between the inter-digitated electrodes of the gas sensor substrates during the deposition. The deposited films were characterised using scanning electron microscopy, X-ray diffraction and Raman spectroscopy. The application of an electric field, encouraged the formation of interesting and unusual nanostructured morphologies, with a change in scale length and island packing. It was also noted that crystallographic orientation of the films could be controlled as a function of electric field type and strength. The gas sensor properties of the films were also examined; it was found that a two to three fold enhancement in the gas response could be observed from sensors with enhanced morphologies compared to control sensors grown without application of an electric field. - Highlights: • Electric field assisted chemical vapour deposition method • Ability to create high surface area film architectures • Can produce enhanced sensor response • Good control over film properties

  3. Electric field assisted aerosol assisted chemical vapour deposition of nanostructured metal oxide thin films

    Energy Technology Data Exchange (ETDEWEB)

    Naik, Anupriya J.T.; Bowman, Christopher; Panjwani, Naitik [Department of Chemistry, University College London, Christopher Ingold Laboratories, 20 Gordon Street, London WC1H OAJ (United Kingdom); Warwick, Michael E.A. [Department of Chemistry, University College London, Christopher Ingold Laboratories, 20 Gordon Street, London WC1H OAJ (United Kingdom); UCL Energy Institute, Central House, 14 Upper Woburn Place, London WC1H 0HY (United Kingdom); Binions, Russell, E-mail: r.binions@qmul.ac.uk [Department of Chemistry, University College London, Christopher Ingold Laboratories, 20 Gordon Street, London WC1H OAJ (United Kingdom); School of Engineering and Materials Science, Queen Mary University of London, Mile End Road, London E1 4NS (United Kingdom)

    2013-10-01

    Nanostructured thin films of tungsten, vanadium and titanium oxides were deposited on gas sensor substrates from the electric field assisted chemical vapour deposition reaction of tungsten hexaphenoxide, vanadyl acetylacetonate and titanium tetraisopropoxide respectively. The electric fields were generated by applying a potential difference between the inter-digitated electrodes of the gas sensor substrates during the deposition. The deposited films were characterised using scanning electron microscopy, X-ray diffraction and Raman spectroscopy. The application of an electric field, encouraged the formation of interesting and unusual nanostructured morphologies, with a change in scale length and island packing. It was also noted that crystallographic orientation of the films could be controlled as a function of electric field type and strength. The gas sensor properties of the films were also examined; it was found that a two to three fold enhancement in the gas response could be observed from sensors with enhanced morphologies compared to control sensors grown without application of an electric field. - Highlights: • Electric field assisted chemical vapour deposition method • Ability to create high surface area film architectures • Can produce enhanced sensor response • Good control over film properties.

  4. Structural Evolution of SiC Films During Plasma-Assisted Chemical Vapour Deposition

    International Nuclear Information System (INIS)

    Evolution of chemical bonding configurations for the films deposited from hexamethyldisiloxane (HMDSO) diluted with H2 during plasma assisted chemical vapour deposition is investigated. In the experiment a small amount of CH4 was added to adjust the plasma environment and modify the structure of the deposited films. The measurements of Raman spectroscopy and X-ray diffraction (XRD) revealed the production of 6H-SiC embedded in the amorphous matrix without the input of CH4. As CH4 was introduced into the deposition reaction, the transition of 6H-SiC to cubic SiC in the films took place, and also the film surfaces changed from a structure of ellipsoids to cauliflower-like shapes. With a further increase of CH4 in the flow ratio, the obtained films varied from Si-C bonding dominant to a sp2/sp3 carbon-rich composition. (low temperature plasma)

  5. Electron behaviour in CH4/H2 gas mixture in electron-assisted chemical vapour deposition

    Institute of Scientific and Technical Information of China (English)

    Dong Li-Fang; Ma Bo-Qin; Wang Zhi-Jun

    2004-01-01

    The behaviour of electrons in CH4/H2 gas mixture in electron-assisted chemical vapour deposition of diamond is investigated using Monte Carlo simulation. The electron drift velocity in gas mixture is obtained over a wide range of E/P (the ratio of the electric field to gas pressure) from 1500 to 300000 (V/m kPa-1). The electron energy distribution and average energy under different gas pressure (0.1-20kPa) and CH4 concentration (0.5%-10.0%) are calculated. Their effects on the diamond growth are also discussed. It is believed that these results will be helpful to the selection of optimum experimental conditions for high quality diamond film deposition.

  6. Plasma Assisted Chemical Vapour Deposition – Technological Design Of Functional Coatings

    Directory of Open Access Journals (Sweden)

    Januś M.

    2015-06-01

    Full Text Available Plasma Assisted Chemical Vapour Deposition (PA CVD method allows to deposit of homogeneous, well-adhesive coatings at lower temperature on different substrates. Plasmochemical treatment significantly impacts on physicochemical parameters of modified surfaces. In this study we present the overview of the possibilities of plasma processes for the deposition of diamond-like carbon coatings doped Si and/or N atoms on the Ti Grade2, aluminum-zinc alloy and polyetherketone substrate. Depending on the type of modified substrate had improved the corrosion properties including biocompatibility of titanium surface, increase of surface hardness with deposition of good adhesion and fine-grained coatings (in the case of Al-Zn alloy and improving of the wear resistance (in the case of PEEK substrate.

  7. In situ doping of ZnO nanowires using aerosol-assisted chemical vapour deposition

    Energy Technology Data Exchange (ETDEWEB)

    Pung, Swee-Yong; Choy, Kwang-Leong; Hou Xianghui; Dinsdale, Keith, E-mail: Kwang-leong.Choy@nottingham.ac.uk [Faculty of Engineering, Energy and Sustainability Research Division, University of Nottingham, Nottingham NG7 2RD (United Kingdom)

    2010-08-27

    An in situ doping approach of producing Al-doped ZnO NWs was demonstrated using an aerosol-assisted chemical vapour deposition (AA-CVD) technique. In this technique, Zn precursor was kept in the middle of a horizontal tube furnace whereas the dopant solution was kept in an aerosol generator, which was located outside the furnace. The Al aerosol was flowed into the reactor during the growth of NWs in order to achieve in situ doping. Al-doped ZnO NWs were synthesized as verified by the combination of XRD, TEM/EDS and TOF-SIMS analysis. Highly (00.2) oriented ZnO seed layers were used to promote vertically aligned growth of Al-doped ZnO NWs. Lastly, a growth mechanism of vertically aligned Al-doped ZnO NWs was discussed.

  8. Scalable route to CH3NH3PbI3 perovskite thin films by aerosol assisted chemical vapour deposition

    OpenAIRE

    Bhachu, D. S.; Scanlon, D. O.; Saban, E. J.; Bronstein, H.; Parkin, I. P.; Carmalt, C. J.; Palgrave, R. G.

    2015-01-01

    Methyl-ammonium lead iodide is the archetypal perovskite solar cell material. Phase pure, compositionally uniform methyl-ammonium lead iodide thin films on large glass substrates were deposited using ambient pressure aerosol assisted chemical vapour deposition. This opens up a route to efficient scale up of hybrid perovskite film growth towards industrial deployment.

  9. Nanocomposite Coatings Codeposited with Nanoparticles Using Aerosol-Assisted Chemical Vapour Deposition

    Directory of Open Access Journals (Sweden)

    Xianghui Hou

    2013-01-01

    Full Text Available Incorporating nanoscale materials into suitable matrices is an effective route to produce nanocomposites with unique properties for practical applications. Due to the flexibility in precursor atomization and delivery, aerosol-assisted chemical vapour deposition (AACVD process is a promising way to synthesize desired nanocomposite coatings incorporating with preformed nanoscale materials. The presence of nanoscale materials in AACVD process would significantly influence deposition mechanism and thus affect microstructure and properties of the nanocomposites. In the present work, inorganic fullerene-like tungsten disulfide (IF-WS2 has been codeposited with Cr2O3 coatings using AACVD. In order to understand the codeposition process for the nanocomposite coatings, chemical reactions of the precursor and the deposition mechanism have been studied. The correlation between microstructure of the nanocomposite coatings and the codeposition mechanism in the AACVD process has been investigated. The heterogeneous reaction on the surface of IF-WS2 nanoparticles, before reaching the substrate surface, is the key feature of the codeposition in the AACVD process. The agglomeration of nanoparticles in the nanocomposite coatings is also discussed.

  10. Hybrid chemical vapour and nanoceramic aerosol assisted deposition for multifunctional nanocomposite thin films

    Energy Technology Data Exchange (ETDEWEB)

    Warwick, Michael E.A.; Dunnill, Charles W.; Goodall, Josie; Darr, Jawwad A.; Binions, Russell, E-mail: uccarbi@ucl.ac.uk

    2011-07-01

    Hybrid atmospheric pressure chemical vapour and aerosol assisted deposition via the reaction of vanadium acetylacetonate and a suspension of preformed titanium dioxide or cerium dioxide nanoparticles, led to the production of vanadium dioxide nanocomposite thin films on glass substrates. The preformed nanoparticle oxides used for the aerosol were synthesised using a continuous hydrothermal flow synthesis route involving the rapid reaction of a metal salt solution with a flow of supercritical water in a flow reactor. Multifunctional nanocomposite thin films from the hybrid deposition process were characterised using scanning electron microscopy, X-ray diffraction and X-ray photoelectron spectroscopy. The functional properties of the films were evaluated using variable temperature optical measurements to assess thermochromic behaviour and methylene blue photodecolourisation experiments to assess photocatalytic activity. The tests show that the films are multifunctional in that they are thermochromic (having a large change in infra-red reflectivity upon exceeding the thermochromic transition temperature) and have significant photocatalytic activity under irradiation with 254 nm light.

  11. Thin-Film Deposition of Metal Oxides by Aerosol-Assisted Chemical Vapour Deposition: Evaluation of Film Crystallinity

    Science.gov (United States)

    Takeuchi, Masahiro; Maki, Kunisuke

    2007-12-01

    Sn-doped In2O3 (ITO) thin films are deposited on glass substrates using 0.2 M aqueous and methanol solutions of InCl3(4H2O) with 5 mol % SnCl2(2H2O) by aerosol-assisted chemical vapour deposition under positive and negative temperature gradient conditions. The film crystallinity is evaluated by determining the film thickness dependence of X-ray diffraction peak height. When using aqueous solution, the ITO films grow with the same crystallinity during the deposition, but when using methanol solution, the preferred orientation of ITO changes during the deposition.

  12. Nanoparticulate cerium dioxide and cerium dioxide-titanium dioxide composite thin films on glass by aerosol assisted chemical vapour deposition

    International Nuclear Information System (INIS)

    Two series of composite thin films were deposited on glass by aerosol assisted chemical vapour deposition (AACVD)-nanoparticulate cerium dioxide and nanoparticulate cerium dioxide embedded in a titanium dioxide matrix. The films were analysed by a range of techniques including UV-visible absorption spectroscopy, X-ray diffraction, scanning electron microscopy and energy dispersive analysis by X-rays. The AACVD prepared films showed the functional properties of photocatalysis and super-hydrophilicity. The CeO2 nanoparticle thin films displaying photocatalysis and photo-induced hydrophilicity almost comparable to that of anatase titania.

  13. Growth of large size diamond single crystals by plasma assisted chemical vapour deposition: Recent achievements and remaining challenges

    Science.gov (United States)

    Tallaire, Alexandre; Achard, Jocelyn; Silva, François; Brinza, Ovidiu; Gicquel, Alix

    2013-02-01

    Diamond is a material with outstanding properties making it particularly suited for high added-value applications such as optical windows, power electronics, radiation detection, quantum information, bio-sensing and many others. Tremendous progresses in its synthesis by microwave plasma assisted chemical vapour deposition have allowed obtaining single crystal optical-grade material with thicknesses of up to a few millimetres. However the requirements in terms of size, purity and crystalline quality are getting more and more difficult to achieve with respect to the forecasted applications, thus pushing the synthesis method to its scientific and technological limits. In this paper, after a short description of the operating principles of the growth technique, the challenges of increasing crystal dimensions both laterally and vertically, decreasing and controlling point and extended defects as well as modulating crystal conductivity by an efficient doping will be detailed before offering some insights into ways to overcome them.

  14. Monte Carlo simulation of the behaviour of electrons during electron-assisted chemical vapour deposition of diamond

    Institute of Scientific and Technical Information of China (English)

    董丽芳; 陈俊英; 董国义; 尚勇

    2002-01-01

    The behaviour of electrons during electron-assisted chemical vapour deposition of diamond is investigated using Monte Carlo simulation. The electron energy distribution and velocity distribution are obtained over a wide range of reduced field E/N (the ratio of the electric field to gas molecule density) from 100 to 2000 in units of 1Td=10-17Vcm2.Their effects on the diamond growth are also discussed. Themain results obtained are as follows. (1) The velocity profile is asymmetric for the component parallel to the field.Ihe velocity distribution has a peak shift in the field direction. Most electrons possess non-zero velocity parallel to the substrate. (2) The number of atomic H is a function of E/N. (3) High-quality diamond can be obtained under the condition of E/N from 50 to 800Td due to sufficient atomic H and electron bombardment.

  15. Aerosol assisted chemical vapour deposition of germanium thin films using organogermanium carboxylates as precursors and formation of germania films

    Indian Academy of Sciences (India)

    Alpa Y Shah; Amey Wadawale; Vijaykumar S Sagoria; Vimal K Jain; C A Betty; S Bhattacharya

    2012-06-01

    Diethyl germanium bis-picolinate, [Et2Ge(O2CC5H4N)2], and trimethyl germanium quinaldate, [Me3Ge(O2CC9H6N)], have been used as precursors for deposition of thin films of germanium by aerosol assisted chemical vapour deposition (AACVD). The thermogravimetric analysis revealed complete volatilization of complexes under nitrogen atmosphere. Germanium thin films were deposited on silicon wafers at 700°C employing AACVD method. These films on oxidation under an oxygen atmosphere at 600°C yield GeO2. Both Ge and GeO2 films were characterized by XRD, SEM and EDS measurements. Their electrical properties were assessed by current–voltage (–) characterization.

  16. Surfactant assisted chemical vapour generation of silver for AAS and ICP-OES: a mechanistic study

    Czech Academy of Sciences Publication Activity Database

    Matoušek, Tomáš; Sturgeon, R. E.

    2003-01-01

    Roč. 18, č. 5 (2003), s. 487-494. ISSN 0267-9477 Institutional research plan: CEZ:AV0Z4031919 Keywords : vapour generation * ICP-OES * silver Subject RIV: CB - Analytical Chemistry, Separation Impact factor: 3.200, year: 2003

  17. Growth mechanism of planar or nanorod structured tungsten oxide thin films deposited via aerosol assisted chemical vapour deposition (AACVD)

    Energy Technology Data Exchange (ETDEWEB)

    Ling, Min; Blackman, Chris [Department of Chemistry, University College London, 20 Gordon Street, London WC1H 0AJ (United Kingdom)

    2015-07-15

    Aerosol assisted chemical vapour deposition (AACVD) is used to deposit tungsten oxide thin films from tungsten hexacarbonyl (W(CO){sub 6}) at 339 to 358 C on quartz substrate. The morphologies of as-deposited thin films, which are comprised of two phases (W{sub 25}O{sub 73} and W{sub 17}O{sub 47}), vary from planar to nanorod (NR) structures as the distance from the inlet towards the outlet of the reactor is traversed. This is related to variation of the actual temperature on the substrate surface (ΔT = 19 C), which result in a change in growth mode due to competition between growth rate (perpendicular to substrate) and nucleation rate (parallel to substrate). When the ratio of perpendicular growth rate to growth rate contributed by nucleation is higher than 7.1, the as-deposited tungsten oxide thin film forms as NR. (copyright 2015 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

  18. Fabrication and gas sensing properties of pure and au-functionalised W03 nanoneedle-like structures, synthesised via aerosol assisted chemical vapour deposition method

    OpenAIRE

    Stoycheva, Toni

    2011-01-01

    In this doctoral thesis, it has been investigated and developed the Aerosol Assisted Chemical Vapour Deposition (AACVD) method for direct in-situ growth of intrinsic and Au-functionalised nanostructured WO3, as well as SnO2-based devices for gas sensing applications. The nanostructured material synthesis, device fabrication and their gas sensing properties have been studied. AACVD method was used for synthesis and direct deposition of sensing films onto classical alumina and microhotplat...

  19. Physical and tribological properties of a-Si1-xCx:H coatings prepared by r.f. plama-assisted chemical vapour deposition

    International Nuclear Information System (INIS)

    A-Si1-xCx:H films deposited by r.f. plasma-assisted chemical vapour deposition were studied as a function of their composition. The friction and wear properties were investigated with the help of a conventional ball-on-disc apparatus. These results are correlated with chemical (Si/C atomic ratio) and structural (Raman and infrared spectroscopy) properties. The friction coefficient in a humid ambient atmosphere changes markedly with the carbon fraction and reaches a value as low as 0.05 for coatings with 70 to 90 at.% C. The carbon-rich films consist of diamond-like carbon with silicon. (orig.)

  20. Effect of surfactants on the morphology of FeSe films fabricated from a single source precursor by aerosol assisted chemical vapour deposition

    Indian Academy of Sciences (India)

    Raja Azadar Hussain; Amin Badshah; Naghma Haider; Malik Dilshad Khan; Bhajan Lal

    2015-03-01

    This article presents the fabrication of FeSe thin films from a single source precursor namely (1-(2-fluorobenzoyl)-3-(4-ferrocenyl-3-methylphenyl)selenourea (MeP2F)) by aerosol assisted chemical vapour deposition (AACVD). All the films were prepared via similar experimental conditions (temperature, flow rate, concentration, solvent system and reactor type) except the use of three different concentrations of two different surfactants i.e., triton and span. Seven thin films were characterized with PXRD, SEM, AFM, EDS and EDS mapping. The mechanism of the interaction of surfactant with MeP2F was determined with cyclic voltammetry (CV) and UV-Vis spectroscopy.

  1. Autonomous Chemical Vapour Detection by Micro UAV

    OpenAIRE

    Kent Rosser; Karl Pavey; Nicholas FitzGerald; Anselm Fatiaki; Daniel Neumann; David Carr; Brian Hanlon; Javaan Chahl

    2015-01-01

    The ability to remotely detect and map chemical vapour clouds in open air environments is a topic of significant interest to both defence and civilian communities. In this study, we integrate a prototype miniature colorimetric chemical sensor developed for methyl salicylate (MeS), as a model chemical vapour, into a micro unmanned aerial vehicle (UAV), and perform flights through a raised MeS vapour cloud. Our results show that that the system is capable of detecting MeS vapours at low ppm con...

  2. Growth and electro-optical properties of Ga-doped ZnO films prepared by aerosol assisted chemical vapour deposition

    International Nuclear Information System (INIS)

    Transparent conductive Ga-doped ZnO thin films were deposited onto glass substrates by a low-cost aerosol assisted chemical vapour deposition technique and the effect of gallium content on the ZnO film growth behaviour and opto-electronic properties was systematically investigated. It is found that, upon increasing Ga addition, the ZnO film crystallinity exhibits a continuous reduction in quality associated with the preferential orientation transformed from (002) to (102). The (002) oriented samples had a microstructure of parallel columnar grains while the (102) oriented coating was thickened by overlapping particles. The ZnO:Ga coatings exhibit high carrier concentration (up to 4.1 × 1020 cm−3) but low carrier mobility (up to 0.8 cm2 V−1 s−1), resulting in a minimum resistivity value of 2.3 × 10−2 Ω cm. The inferior carrier mobility performance could result from a profound ionized and neutral impurity scattering effect. Good visible transmittance (≈ 70–80%) is observed in these ZnO:Ga films and samples with higher carrier density present better infrared reflection performance (up to 37.2% at 2500 nm). - Highlights: • Aerosol assisted chemical vapour deposition of doped zinc oxide thin films • Gallium doping and opto-electronic properties systemically investigated • Growth mechanism changed by % gallium incorporation

  3. Growth and electro-optical properties of Ga-doped ZnO films prepared by aerosol assisted chemical vapour deposition

    Energy Technology Data Exchange (ETDEWEB)

    Chen, Shuqun [School of Engineering and Materials Science, Queen Mary University of London, Mile End Road, London E1 4NS (United Kingdom); Carraro, Giorgio [Department of Chemistry and INSTM, Padova University, Padova 35131 (Italy); Barreca, Davide [CNR-IENI and INSTM, Department of Chemistry, Padova University, Padova 35131 (Italy); Binions, Russell [School of Engineering and Materials Science, Queen Mary University of London, Mile End Road, London E1 4NS (United Kingdom)

    2015-06-01

    Transparent conductive Ga-doped ZnO thin films were deposited onto glass substrates by a low-cost aerosol assisted chemical vapour deposition technique and the effect of gallium content on the ZnO film growth behaviour and opto-electronic properties was systematically investigated. It is found that, upon increasing Ga addition, the ZnO film crystallinity exhibits a continuous reduction in quality associated with the preferential orientation transformed from (002) to (102). The (002) oriented samples had a microstructure of parallel columnar grains while the (102) oriented coating was thickened by overlapping particles. The ZnO:Ga coatings exhibit high carrier concentration (up to 4.1 × 10{sup 20} cm{sup −3}) but low carrier mobility (up to 0.8 cm{sup 2} V{sup −1} s{sup −1}), resulting in a minimum resistivity value of 2.3 × 10{sup −2} Ω cm. The inferior carrier mobility performance could result from a profound ionized and neutral impurity scattering effect. Good visible transmittance (≈ 70–80%) is observed in these ZnO:Ga films and samples with higher carrier density present better infrared reflection performance (up to 37.2% at 2500 nm). - Highlights: • Aerosol assisted chemical vapour deposition of doped zinc oxide thin films • Gallium doping and opto-electronic properties systemically investigated • Growth mechanism changed by % gallium incorporation.

  4. On titanium dioxide thin films growth from the direct current electric field assisted chemical vapour deposition of titanium (IV) chloride in toluene

    International Nuclear Information System (INIS)

    Titanium dioxide thin films were deposited from the aerosol assisted chemical vapour deposition reaction of titanium tetrachloride in toluene (1 M) at 600 °C and 5 L min−1. Direct current electric fields were applied and increased in a range of 0 to 30 V during the reaction. Changes in particle size, agglomeration and particle shape were observed. Raman spectroscopy analysis revealed different composition of anatase and rutile and crystal phase depending on the field strength applied. The photocatalytic activity was calculated from the half-life or time needed by the films to degrade 50% Resazurin dye-ink initial concentration. High photocatalytic performance with high anatase content (98.3%) was observed with half-life values of 3.9 min. Deposited films with pure content in rutile showed better photocatalytic performance than films with mix of crystal phases with anatase content below 40%. - Highlights: • Electric field assisted chemical vapour deposition used to synthesis titania thin films. • Significant alterations to crystallographic orientation and microstructure observed • Order of magnitude reduction in half life of dye degradation obtainable

  5. Thin films of tin(II) sulphide (SnS) by aerosol-assisted chemical vapour deposition (AACVD) using tin(II) dithiocarbamates as single-source precursors

    Science.gov (United States)

    Kevin, Punarja; Lewis, David J.; Raftery, James; Azad Malik, M.; O'Brien, Paul

    2015-04-01

    The synthesis of the asymmetric dithiocarbamates of tin(II) with the formula [Sn(S2CNRR')2] (where R=Et, R'=n-Bu (1); R=Me, R'=n-Bu (2); R=R'=Et (3)) and their use for the deposition of SnS thin films by aerosol-assisted chemical vapour deposition (AACVD) is described. The effects of temperature and the concentration of the precursors on deposition were investigated. The stoichiometry of SnS was best at higher concentrations of precursors (250 mM) and at 450 °C. The direct electronic band gap of the SnS produced by this method was estimated from optical absorbance measurements as 1.2 eV. The composition of films was confirmed by powder X-ray diffraction (p-XRD) and energy dispersive analysis of X-rays (EDAX) spectroscopy.

  6. Preparation of high-quality hydrogenated amorphous silicon film with a new microwave electron cyclotron resonance chemical vapour deposition system assisted with hot wire

    Institute of Scientific and Technical Information of China (English)

    Zhu Xiu-Hong; Chen Guang-Hua; Yin Sheng-Yi; Rong Yan-Dong; Zhang Wen-Li; Hu Yue-Hui

    2005-01-01

    The preparation of high-quality hydrogenated amorphous silicon (a-Si:H) film with a new microwave electron cyclotron resonance-chemical vapour deposition (MWECR-CVD) system assisted with hot wire is presented. In this system the hot wire plays an important role in perfecting the microstructure as well as improving the stability and the optoelectronic properties of the a-Si:H film. The experimental results indicate that in the microstructure of the a-Si:H film, the concentration of dihydride is decreased and a trace of microcrystalline occurs, which is useful to improve its stability, and that in the optoelectronic properties of the a-Si:H film, the deposition rate reaches above 2.0nm/s and the photosensitivity increases up to 4.71× 105.

  7. Synthesis, structural characterization and optical properties of multilayered Yttria-stabilized ZrO2 thin films obtained by aerosol assisted chemical vapour deposition

    International Nuclear Information System (INIS)

    Multilayered Yttria-stabilized zirconium (YSZ) oxide thin films were synthesized by aerosol assisted chemical vapour deposition onto borosilicate glass substrate. The film consisted of a periodic stack of several YSZ layer pairs. Each pair was composed of layers, a few nanometers thick, of the same composition but different density. Optically the multilayered microstructure correspond to alternating layers of high (dense layer) and low (porous layer) refraction index. The microstructure was analysed by electron and atomic force microscopy. Optical properties were evaluated by reflectance spectroscopy, and associated with the cross sectional microstructure of the films. The measured effective refractive index of the films deviates from bulk value. The discrepancy can be explained by the multilayered structure of the film

  8. Autonomous Chemical Vapour Detection by Micro UAV

    Directory of Open Access Journals (Sweden)

    Kent Rosser

    2015-12-01

    Full Text Available The ability to remotely detect and map chemical vapour clouds in open air environments is a topic of significant interest to both defence and civilian communities. In this study, we integrate a prototype miniature colorimetric chemical sensor developed for methyl salicylate (MeS, as a model chemical vapour, into a micro unmanned aerial vehicle (UAV, and perform flights through a raised MeS vapour cloud. Our results show that that the system is capable of detecting MeS vapours at low ppm concentration in real-time flight and rapidly sending this information to users by on-board telemetry. Further, the results also indicate that the sensor is capable of distinguishing “clean” air from “dirty”, multiple times per flight, allowing us to look towards autonomous cloud mapping and source localization applications. Further development will focus on a broader range of integrated sensors, increased autonomy of detection and improved engineering of the system.

  9. Heterocyclic dithiocarbamato-iron(III) complexes: single-source precursors for aerosol-assisted chemical vapour deposition (AACVD) of iron sulfide thin films.

    Science.gov (United States)

    Mlowe, Sixberth; Lewis, David J; Malik, Mohammad Azad; Raftery, James; Mubofu, Egid B; O'Brien, Paul; Revaprasadu, Neerish

    2016-02-14

    Tris-(piperidinedithiocarbamato)iron(III) (1) and tris-(tetrahydroquinolinedithiocarbamato)iron(iii) (2) complexes have been synthesized and their single-crystal X-ray structures were determined. Thermogravimetric analysis (TGA) of the complexes showed decomposition to iron sulfide. Both complexes were then used as single-source precursors for the deposition of iron sulfide thin films by aerosol-assisted chemical vapour deposition (AACVD). Energy-dispersive X-ray (EDX) spectroscopy confirmed the formation of iron sulfide films. The addition of tert-butyl thiol almost doubled the sulfur content in the deposited films. Scanning electron microscopy (SEM) images of the iron sulfide films from both complexes showed flakes/leaves/sheets, spherical granules and nanofibres. The sizes and shapes of these crystallites depended on the nature of the precursor, temperature, solvent and the amount of tert-butyl thiol used. The observed optical properties are dependent upon the variation of reaction parameters such as temperature and solvent. Powder X-ray diffraction (p-XRD) studies revealed that pyrrhotite, hexagonal (Fe0.975S), marcasite and smythite (Fe3S4) phases were differently deposited. PMID:26732865

  10. Surface morphological and photoelectrochemical studies of ZnS thin films developed from single source precursors by aerosol assisted chemical vapour deposition

    Energy Technology Data Exchange (ETDEWEB)

    Ehsan, Muhammad Ali [Faculty of Science, Department of Chemistry, University of Malaya, Lembah Pantai, 50603 Kuala Lumpur (Malaysia); Peiris, T.A. Nirmal; Wijayantha, K.G. Upul [Department of Chemistry, Loughborough University, Loughborough, LE11 3TU (United Kingdom); Khaledi, Hamid [Faculty of Science, Department of Chemistry, University of Malaya, Lembah Pantai, 50603 Kuala Lumpur (Malaysia); Ming, Huang Nay [Faculty of Science, Department of Physics, University of Malaya, Lembah Pantai, 50603 Kuala Lumpur (Malaysia); Misran, Misni; Arifin, Zainudin [Faculty of Science, Department of Chemistry, University of Malaya, Lembah Pantai, 50603 Kuala Lumpur (Malaysia); Mazhar, Muhammad, E-mail: mazhar42pk@yahoo.com [Faculty of Science, Department of Chemistry, University of Malaya, Lembah Pantai, 50603 Kuala Lumpur (Malaysia)

    2013-07-01

    Zinc sulphide (ZnS) thin films have been deposited on fluorine-doped tin oxide-coated conducting glass substrates at 375, 425 and 475 °C temperatures from single source adduct precursors [Zn(S{sub 2}CNCy{sub 2}){sub 2}(py)] (1) [where, Cy = cyclohexyl, py = pyridine] and [Zn{S_2CN(CH_2Ph)(Me)}{sub 2}(py)] (2) [where, Ph = Phenyl, Me = Methyl] using aerosol assisted chemical vapour deposition (AACVD). The precursor complexes have been characterized by microanalysis, infrared spectroscopy, proton nuclear magnetic resonance spectroscopy, X-ray single crystal and thermogravimetric analysis. Thermal analysis showed that both precursors (1) and (2) undergo thermal decomposition at 375 °C to produce ZnS residues. The deposited ZnS films have been characterized by X-ray diffraction and energy dispersive X-ray spectroscopy. Scanning electron microscopic studies indicated that the surface morphology of ZnS films strongly depends on the nature of the precursor and the deposition temperature, regardless of marginal variation in thermal stability of the precursors. Direct band gap energies of 3.36 and 3.40 eV have been estimated from the ultraviolet–visible spectroscopy for the ZnS films fabricated from precursors (1) and (2), respectively. The current–voltage characteristics recorded under air mass 1.5 illumination confirmed that the deposited ZnS thin films are photoactive under anodic bias conditions. Furthermore, the photoelectrochemical (PEC) results indicate that these synthesised single source precursors are suitable for obtaining ZnS thin films by AACVD method. The ZnS thin film electrode prepared in this study are very promising for solar energy conversion and optoelectronic applications. The PEC properties of ZnS electrodes prepared from (2) are superior to that of the ZnS electrode prepared from precursor (1). - Highlights: • Synthesis and characterization of zinc dithiocarbamate pyridine adducts. • ZnS photo electrodes have been fabricated using aerosol-assisted

  11. Surface morphological and photoelectrochemical studies of ZnS thin films developed from single source precursors by aerosol assisted chemical vapour deposition

    International Nuclear Information System (INIS)

    Zinc sulphide (ZnS) thin films have been deposited on fluorine-doped tin oxide-coated conducting glass substrates at 375, 425 and 475 °C temperatures from single source adduct precursors [Zn(S2CNCy2)2(py)] (1) [where, Cy = cyclohexyl, py = pyridine] and [Zn{S2CN(CH2Ph)(Me)}2(py)] (2) [where, Ph = Phenyl, Me = Methyl] using aerosol assisted chemical vapour deposition (AACVD). The precursor complexes have been characterized by microanalysis, infrared spectroscopy, proton nuclear magnetic resonance spectroscopy, X-ray single crystal and thermogravimetric analysis. Thermal analysis showed that both precursors (1) and (2) undergo thermal decomposition at 375 °C to produce ZnS residues. The deposited ZnS films have been characterized by X-ray diffraction and energy dispersive X-ray spectroscopy. Scanning electron microscopic studies indicated that the surface morphology of ZnS films strongly depends on the nature of the precursor and the deposition temperature, regardless of marginal variation in thermal stability of the precursors. Direct band gap energies of 3.36 and 3.40 eV have been estimated from the ultraviolet–visible spectroscopy for the ZnS films fabricated from precursors (1) and (2), respectively. The current–voltage characteristics recorded under air mass 1.5 illumination confirmed that the deposited ZnS thin films are photoactive under anodic bias conditions. Furthermore, the photoelectrochemical (PEC) results indicate that these synthesised single source precursors are suitable for obtaining ZnS thin films by AACVD method. The ZnS thin film electrode prepared in this study are very promising for solar energy conversion and optoelectronic applications. The PEC properties of ZnS electrodes prepared from (2) are superior to that of the ZnS electrode prepared from precursor (1). - Highlights: • Synthesis and characterization of zinc dithiocarbamate pyridine adducts. • ZnS photo electrodes have been fabricated using aerosol-assisted chemical vapor

  12. Biocompatibility of chemical-vapour-deposited diamond.

    Science.gov (United States)

    Tang, L; Tsai, C; Gerberich, W W; Kruckeberg, L; Kania, D R

    1995-04-01

    The biocompatibility of chemical-vapour-deposited (CVD) diamond surfaces has been assessed. Our results indicate that CVD diamond is as biocompatible as titanium (Ti) and 316 stainless steel (SS). First, the amount of adsorbed and 'denatured' fibrinogen on CVD diamond was very close to that of Ti and SS. Second, both in vitro and in vivo there appears to be less cellular adhesion and activation on the surface of CVD diamond surfaces compared to Ti and SS. This evident biocompatibility, coupled with the corrosion resistance and notable mechanical integrity of CVD diamond, suggests that diamond-coated surfaces may be highly desirable in a number of biomedical applications. PMID:7654876

  13. Investigations on the effects of plasma-assisted pre-treatment for plasma-assisted chemical vapour deposition TiN coatings on tool steel

    Energy Technology Data Exchange (ETDEWEB)

    Gammer, K.; Stoiber, M.; Wagner, J.; Hutter, H.; Kullmer, R.; Mitterer, C

    2004-08-16

    Different mixtures of hydrogen, nitrogen and argon were tested for the cleaning and nitriding of cold-working, high chromium tool steel, prior to TiN deposition with the aim of improving adhesion of the TiN layer. It is well known that the condition of the substrate surface and hardening of the substrate by nitriding have a large influence on the adhesion strength of films. Good adhesion was achieved when nitrogen-hydrogen atmosphere with 40%-80% nitrogen (and 20%-60% hydrogen, respectively) was used, the best adhesion quality values were achieved (HF 1-2) with 40% nitrogen. With higher or lower fractions of nitrogen in the pre-treatment gas, adhesion was reduced. Argon addition also had negative effects on the adhesion strength. The microstructure and chemical composition of the near-interface region of the differently pretreated samples were analysed using secondary ion mass spectrometry, X-ray diffraction and light optical microscopy.

  14. Investigations on the effects of plasma-assisted pre-treatment for plasma-assisted chemical vapour deposition TiN coatings on tool steel

    International Nuclear Information System (INIS)

    Different mixtures of hydrogen, nitrogen and argon were tested for the cleaning and nitriding of cold-working, high chromium tool steel, prior to TiN deposition with the aim of improving adhesion of the TiN layer. It is well known that the condition of the substrate surface and hardening of the substrate by nitriding have a large influence on the adhesion strength of films. Good adhesion was achieved when nitrogen-hydrogen atmosphere with 40%-80% nitrogen (and 20%-60% hydrogen, respectively) was used, the best adhesion quality values were achieved (HF 1-2) with 40% nitrogen. With higher or lower fractions of nitrogen in the pre-treatment gas, adhesion was reduced. Argon addition also had negative effects on the adhesion strength. The microstructure and chemical composition of the near-interface region of the differently pretreated samples were analysed using secondary ion mass spectrometry, X-ray diffraction and light optical microscopy

  15. Mechanism and efficiency of chemical vapour generation of silver

    Czech Academy of Sciences Publication Activity Database

    Matoušek, Tomáš

    Budapešť, 2005. [European Winter Conference on Plasma Spectrochemistry . Budapest (HU), 30.01.2005-03.02.2005] R&D Projects: GA ČR(CZ) GA203/01/0453 Institutional research plan: CEZ:AV0Z40310501 Keywords : silver * chemical vapour generation * ICP-OES Subject RIV: CB - Analytical Chemistry, Separation

  16. IR Laser-induced Chemical Vapour Deposition of Polyselenocarbosilane Films

    Czech Academy of Sciences Publication Activity Database

    Santos, M.; Díaz, L.; Pola, Josef

    - : -, 2006, s. 1-2. [Reunión Nacional de Espectroscopia (RNE) y IV Congresso Ibérico de Espectroscopia (CIE) /20./. Ciúdad Real (ES), 10.09.2006-14.09.2006] Institutional research plan: CEZ:AV0Z40720504 Keywords : chemical vapour deposition Subject RIV: CH - Nuclear ; Quantum Chemistry

  17. Chemical-Engineering Approach for Evaluation of Vapour Permeation Data.

    Czech Academy of Sciences Publication Activity Database

    Sedláková, Zuzana; Morávková, Lenka; Vejražka, Jiří; Izák, Pavel

    Ozarow Mazowiecki: Nobell Compressing sp. z o.o, 2015 - (Kosinsky, K.; Urbanczyk, M.; Žerko, S.), E-026 ISBN N. [Euromembrane Conference 2015. Aachen (DE), 06.09.2015-10.09.2015] R&D Projects: GA MŠk(CZ) LD14094 Institutional support: RVO:67985858 Keywords : organic vapour permeation * membrane separation * chemical-engineering model Subject RIV: CI - Industrial Chemistry, Chemical Engineering

  18. Chemical Vapour Deposition of Large Area Graphene

    OpenAIRE

    Larsen, Martin Benjamin Barbour Spanget; Bøggild, Peter; Booth, Tim; Jørgensen, Anders Michael

    2015-01-01

    Chemical Vapor Deposition (CVD) is a viable technique for fabrication of large areas of graphene. CVD fabrication is the most prominent and common way of fabricating graphene in industry. In this thesis I have attempted to optimize a growth recipe and catalyst layer for CVD fabrication of uniform, single layer, and high carrier mobility large area graphene. The main goals of this work are; (1) explore the graphene growth mechanics in a low pressure cold-wall CVD system on a copper substrate, ...

  19. Chemical Vapour Deposition of Large Area Graphene

    DEFF Research Database (Denmark)

    Larsen, Martin Benjamin Barbour Spanget

    Chemical Vapor Deposition (CVD) is a viable technique for fabrication of large areas of graphene. CVD fabrication is the most prominent and common way of fabricating graphene in industry. In this thesis I have attempted to optimize a growth recipe and catalyst layer for CVD fabrication of uniform......, single layer, and high carrier mobility large area graphene. The main goals of this work are; (1) explore the graphene growth mechanics in a low pressure cold-wall CVD system on a copper substrate, and (2) optimize the process of growing high quality graphene in terms of carrier mobility, and crystal...... structure. Optimization of a process for graphene growth on commercially available copper foil is limited by the number of aluminium oxide particles on the surface of the catalyst. By replacing the copper foil with a thin deposited copper film on a SiO2/Si or c-plane sapphire wafer the particles can...

  20. Chemical vapour deposition synthetic diamond: materials, technology and applications

    OpenAIRE

    Balmer, R. S.; Brandon, J R; Clewes, S L; Dhillon, H. K.; Dodson, J M; Friel, I.; Inglis, P. N.; Madgwick, T D; Markham, M. L.; Mollart, T P; Perkins, N.; Scarsbrook, G. A.; Twitchen, D. J.; Whitehead, A J; Wilman, J J

    2009-01-01

    Substantial developments have been achieved in the synthesis of chemical vapour deposition (CVD) diamond in recent years, providing engineers and designers with access to a large range of new diamond materials. CVD diamond has a number of outstanding material properties that can enable exceptional performance in applications as diverse as medical diagnostics, water treatment, radiation detection, high power electronics, consumer audio, magnetometry and novel lasers. Often the material is synt...

  1. Dry-transfer of chemical vapour deposited nanocarbon thin films

    OpenAIRE

    Cole, Matthew Thomas

    2012-01-01

    This thesis presents the development of chemical vapour deposited (CVD) graphene and multi-walled carbon nanotubes (MWCNTs) as enabling technologies for flexible transparent conductors offering enhanced functionality. The technologies developed could be employed as thin film field emission sources, optical sensors and substrate-free wideband optical polarisers. Detailed studies were performed on CVD Fe and Ni catalysed carbon nanotubes and nanofibres on indium tin oxide, alu...

  2. Microscopic characterisation of suspended graphene grown by chemical vapour deposition

    OpenAIRE

    Bignardi, Luca; van Dorp, Willem F; Gottardi, Stefano; Ivashenko, Oleksii; Dudin, Pavel; Barinov, Alexei; de Hosson, Jeff Th. M.; Stöhr, Meike; Rudolf, Petra

    2013-01-01

    We present a multi-technique characterisation of graphene grown by chemical vapour deposition (CVD) and thereafter transferred to and suspended on a grid for transmission electron microscopy (TEM). The properties of the electronic band structure are investigated by angle-resolved photoelectron spectromicroscopy, while the structural and crystalline properties are studied by TEM and Raman spectroscopy. We demonstrate that the suspended graphene membrane locally shows electronic properties comp...

  3. Laser-Induced Chemical Vapour Deposition of Silicon Carbonitride

    OpenAIRE

    Besling, W.; van der Put, P.; Schoonman, J.

    1995-01-01

    Laser-induced Chemical Vapour Deposition of silicon carbonitride coatings and powders has been investigated using hexamethyldisilazane (HMDS) and ammonia as reactants. An industrial CW CO2-laser in parallel configuration has been used to heat up the reactant gases. HMDS dissociates in the laser beam and reactive radicals are formed which increase rapidly in molecular weight by an addition mechanism. Dense polymer-like silicon carbonitride thin films and nanosized powders are formed depending ...

  4. Chemical vapour deposition of metal oxides and phosphides.

    OpenAIRE

    Binions, R.

    2006-01-01

    This thesis investigates the deposition of thin films of main group metal phosphide and main group metal oxide compounds on glass substrates by the use of dual source atmospheric pressure chemical vapour deposition. Binary phosphide systems with tin, germanium, silicon, antimony, copper or boron have been examined. Binary oxide systems of gallium, antimony, tin or niobium have also been investigated. Additionally these systems were deposited on gas sensor substrates and evaluated as metal oxi...

  5. Chemical vapour deposition of zeolitic imidazolate framework thin films

    Science.gov (United States)

    Stassen, Ivo; Styles, Mark; Grenci, Gianluca; Gorp, Hans Van; Vanderlinden, Willem; Feyter, Steven De; Falcaro, Paolo; Vos, Dirk De; Vereecken, Philippe; Ameloot, Rob

    2016-03-01

    Integrating metal-organic frameworks (MOFs) in microelectronics has disruptive potential because of the unique properties of these microporous crystalline materials. Suitable film deposition methods are crucial to leverage MOFs in this field. Conventional solvent-based procedures, typically adapted from powder preparation routes, are incompatible with nanofabrication because of corrosion and contamination risks. We demonstrate a chemical vapour deposition process (MOF-CVD) that enables high-quality films of ZIF-8, a prototypical MOF material, with a uniform and controlled thickness, even on high-aspect-ratio features. Furthermore, we demonstrate how MOF-CVD enables previously inaccessible routes such as lift-off patterning and depositing MOF films on fragile features. The compatibility of MOF-CVD with existing infrastructure, both in research and production facilities, will greatly facilitate MOF integration in microelectronics. MOF-CVD is the first vapour-phase deposition method for any type of microporous crystalline network solid and marks a milestone in processing such materials.

  6. Comparison of laser-ablation and hot-wall chemical vapour deposition techniques for nanowire fabrication

    International Nuclear Information System (INIS)

    A comparison of the transport properties of populations of single-crystal, In2O3 nanowires (NWs) grown by unassisted hot-wall chemical vapour deposition (CVD) versus NWs grown by laser-ablation-assisted chemical vapour deposition (LA-CVD) is presented. For nominally identical growth conditions across the two systems, NWs fabricated at 850 deg. C with laser-ablation had significantly higher average mobilities at the 99.9% confidence level, 53.3 ± 5.8 cm2 V-1 s-1 versus 10.2 ± 1.9 cm2 V-1 s-1. It is also observed that increasing growth temperature decreases mobility for LA-CVD NWs. Transmission electron microscopy studies of CVD-fabricated samples indicate the presence of an amorphous In2O3 region surrounding the single-crystal core. Further, low-temperature measurements verify the presence of ionized impurity scattering in low-mobility CVD-grown NWs

  7. Surface chemical studies of chemical vapour deposited diamond thin films

    International Nuclear Information System (INIS)

    Polycrystalime diamond grown by low pressure chemical vapour deposition (CVD) techniques has emerged in recent years as a new material with applications in such areas as optics, electronics, radiation detectors, chemical sensors and electrochemistry. A main aim of this thesis has been to advance current knowledge of the surface chemical properties of CVD diamond to underpin the development of our understanding of the properties and potential applications of this material. Cl2 is found to adsorb dissociatively on the clean, hydrogen-free diamond surface up to sub-monolayer coverage with a sticking probability of ∼1.2x10-3. Adsorption is a non-activated process, and the sticking probability and extent of coverage decreased with increasing temperature. This was shown to contrast with the behaviour found for the interaction of chlorine with the hydrogenated diamond surface where increased sticking probabilities and saturation surface coverages were observed, and where the reactivity also increased with temperature. Thermal desorption of atomic Cl occurred over a broad temperature range m both chemisorption systems, indicating the presence of more than one binding state. Atomic hydrogen was successful in efficiently etching the bound Cl from the surface. XeF2 was found to adsorb dissociatively onto the clean diamond surface to give up to monolayer coverages of F, which formed two distinct binding states. The first state, populated at low coverage, was predominantly covalent in character, while the second state, occurring at high surface coverages, had more ionic bonding character. Pre-hydrogenation of the diamond surface increased the reactive sticking probability observed, but decreased the extent of coverage by blocking reactive sites. The semi-ionic F was readily etched by atomic hydrogen, and underwent thermal desorption at temperatures as low as 300 deg C. The covalent form was more stable, being seemingly resistant to etching and persistent to high temperatures

  8. Chemical vapour deposited diamonds for dosimetry of radiotherapeutical beams

    Energy Technology Data Exchange (ETDEWEB)

    Bucciolini, M.; Mazzocchi, S. [Firenze Univ., Firenze (Italy). Dipartimento di Fisiopatologia Clinica; INFN, Firenze (Italy); Borchi, E.; Bruzzi, M.; Pini, S.; Sciortino, S. [Firenze Univ., Firenze (Italy). Dipartimento di Energetica; INFN, Firenze (Italy); Cirrone, G.A.P.; Guttone, G.; Raffaele, L.; Sabini, M.G. [INFN, Catania (Italy). Laboratori Nazionali del Sud

    2002-07-01

    This paper deals with the application of synthetic diamond detectors to the clinical dosimetry of photon and electron beams. It has been developed in the frame of INFN CANDIDO project and MURST Cofin. Diamonds grown with CVD (Chemical Vapour Deposition) technique have been studied; some of them are commercial samples while others have been locally synthesised. Experiments have been formed using both on-line and off-line approaches. For the off-line measurements, TL (thermoluminescent) and TSC (thermally stimulated current) techniques have been used.

  9. Microscopic characterisation of suspended graphene grown by chemical vapour deposition

    Science.gov (United States)

    Bignardi, Luca; van Dorp, Willem F.; Gottardi, Stefano; Ivashenko, Oleksii; Dudin, Pavel; Barinov, Alexei; de Hosson, Jeff Th. M.; Stöhr, Meike; Rudolf, Petra

    2013-09-01

    We present a multi-technique characterisation of graphene grown by chemical vapour deposition (CVD) and thereafter transferred to and suspended on a grid for transmission electron microscopy (TEM). The properties of the electronic band structure are investigated by angle-resolved photoelectron spectromicroscopy, while the structural and crystalline properties are studied by TEM and Raman spectroscopy. We demonstrate that the suspended graphene membrane locally shows electronic properties comparable with those of samples prepared by micromechanical cleaving of graphite. Measurements show that the area of high quality suspended graphene is limited by the folding of the graphene during the transfer.

  10. Microscopic characterisation of suspended graphene grown by chemical vapour deposition.

    Science.gov (United States)

    Bignardi, Luca; van Dorp, Willem F; Gottardi, Stefano; Ivashenko, Oleksii; Dudin, Pavel; Barinov, Alexei; De Hosson, Jeff Th M; Stöhr, Meike; Rudolf, Petra

    2013-10-01

    We present a multi-technique characterisation of graphene grown by chemical vapour deposition (CVD) and thereafter transferred to and suspended on a grid for transmission electron microscopy (TEM). The properties of the electronic band structure are investigated by angle-resolved photoelectron spectromicroscopy, while the structural and crystalline properties are studied by TEM and Raman spectroscopy. We demonstrate that the suspended graphene membrane locally shows electronic properties comparable with those of samples prepared by micromechanical cleaving of graphite. Measurements show that the area of high quality suspended graphene is limited by the folding of the graphene during the transfer. PMID:23945527

  11. Chemical vapour deposited diamonds for dosimetry of radiotherapeutical beams

    International Nuclear Information System (INIS)

    This paper deals with the application of synthetic diamond detectors to the clinical dosimetry of photon and electron beams. It has been developed in the frame of INFN CANDIDO project and MURST Cofin. Diamonds grown with CVD (Chemical Vapour Deposition) technique have been studied; some of them are commercial samples while others have been locally synthesised. Experiments have been formed using both on-line and off-line approaches. For the off-line measurements, TL (thermoluminescent) and TSC (thermally stimulated current) techniques have been used

  12. CHEMICAL VAPOUR INFILTRATION (CVI) OF SILICON CARBIDE FIBRE PREFORMS

    OpenAIRE

    Lundberg, R.; Pejryd, L.; LÖÖf, G.

    1991-01-01

    An alternative fabrication technique is proposed for ceramic matrix / ceramic fibre composites involving filling a fibre fabric preform with a Si/Si3 N4 slurry and subsequently reaction bonding. For the first processing step in this process, chemical vapour infiltration (CVI) was evaluated as a means of both biding together and protecting the fibres. SiC (Nicalon) fibre preforms consisting of through-stitched 2D fabrics were infiltrated. The preform thickness was more than 4 mm and a 3 µm TiC...

  13. Evaluation of niobium dimethylamino-ethoxide for chemical vapour deposition of niobium oxide thin films

    International Nuclear Information System (INIS)

    Chemical vapour deposition (CVD) processes depend on the availability of suitable precursors. Precursors that deliver a stable vapour pressure are favourable in classical CVD processes, as they ensure process reproducibility. In high vacuum CVD (HV-CVD) process vapour pressure stability of the precursor is of particular importance, since no carrier gas assisted transport can be used. The dimeric Nb2(OEt)10 does not fulfil this requirement since it partially dissociates upon heating. Dimethylamino functionalization of an ethoxy ligand of Nb(OEt)5 acts as an octahedral field completing entity and leads to Nb(OEt)4(dmae). We show that Nb(OEt)4(dmae) evaporates as monomeric molecule and ensures a stable vapour pressure and, consequently, stable flow. A set of HV-CVD experiments were conducted using this precursor by projecting a graded molecular beam of the precursor onto the substrate at deposition temperatures from 320 °C to 650 °C. Film growth rates ranging from 8 nm·h−1 to values larger than 400 nm·h−1 can be obtained in this system illustrating the high level of control available over the film growth process. Classical CVD limiting conditions along with the recently reported adsorption–reaction limited conditions are observed and the chemical composition, and microstructural and optical properties of the films are related to the corresponding growth regime. Nb(OEt)4(dmae) provides a large process window of deposition temperatures and precursor fluxes over which carbon-free and polycrystalline niobium oxide films with growth rates proportional to precursor flux are obtained. This feature makes Nb(OEt)4(dmae) an attractive precursor for combinatorial CVD of niobium containing complex oxide films that are finding an increasing interest in photonics and photoelectrochemical water splitting applications. The adsorption–reaction limited conditions provide extremely small growth rates comparable to an atomic layer deposition (ALD) process indicating that HV

  14. Light-induced chemical vapour deposition painting with titanium dioxide

    Energy Technology Data Exchange (ETDEWEB)

    Halary-Wagner, E.; Bret, T.; Hoffmann, P

    2003-03-15

    Light-induced chemical vapour deposits of titanium dioxide are obtained from titanium tetra-isopropoxide (TTIP) in an oxygen and nitrogen atmosphere with a long pulse (250 ns) 308 nm XeCl excimer laser using a mask projection set-up. The demonstrated advantages of this technique are: (i) selective area deposition, (ii) precise control of the deposited thickness and (iii) low temperature deposition, enabling to use a wide range of substrates. A revolving mask system enables, in a single reactor load, to deposit shapes of controlled heights, which overlap to build up a complex pattern. Interferential multi-coloured deposits are achieved, and the process limitations (available colours and resolution) are discussed.

  15. Chemical Vapour Deposition of Gas Sensitive Metal Oxides

    Directory of Open Access Journals (Sweden)

    Stella Vallejos

    2016-03-01

    Full Text Available This article presents a review of recent research efforts and developments for the fabrication of metal-oxide gas sensors using chemical vapour deposition (CVD, presenting its potential advantages as a materials synthesis technique for gas sensors along with a discussion of their sensing performance. Thin films typically have poorer gas sensing performance compared to traditional screen printed equivalents, attributed to reduced porosity, but the ability to integrate materials directly with the sensor platform provides important process benefits compared to competing synthetic techniques. We conclude that these advantages are likely to drive increased interest in the use of CVD for gas sensor materials over the next decade, whilst the ability to manipulate deposition conditions to alter microstructure can help mitigate the potentially reduced performance in thin films, hence the current prospects for use of CVD in this field look excellent.

  16. Chemical vapour deposition synthetic diamond: materials, technology and applications

    Science.gov (United States)

    Balmer, R. S.; Brandon, J. R.; Clewes, S. L.; Dhillon, H. K.; Dodson, J. M.; Friel, I.; Inglis, P. N.; Madgwick, T. D.; Markham, M. L.; Mollart, T. P.; Perkins, N.; Scarsbrook, G. A.; Twitchen, D. J.; Whitehead, A. J.; Wilman, J. J.; Woollard, S. M.

    2009-09-01

    Substantial developments have been achieved in the synthesis of chemical vapour deposition (CVD) diamond in recent years, providing engineers and designers with access to a large range of new diamond materials. CVD diamond has a number of outstanding material properties that can enable exceptional performance in applications as diverse as medical diagnostics, water treatment, radiation detection, high power electronics, consumer audio, magnetometry and novel lasers. Often the material is synthesized in planar form; however, non-planar geometries are also possible and enable a number of key applications. This paper reviews the material properties and characteristics of single crystal and polycrystalline CVD diamond, and how these can be utilized, focusing particularly on optics, electronics and electrochemistry. It also summarizes how CVD diamond can be tailored for specific applications, on the basis of the ability to synthesize a consistent and engineered high performance product.

  17. Thermoluminescence characterisation of chemical vapour deposited diamond films

    CERN Document Server

    Mazzocchi, S; Bucciolini, M; Cuttone, G; Pini, S; Sabini, M G; Sciortino, S

    2002-01-01

    The thermoluminescence (TL) characteristics of a set of six chemical vapour deposited diamond films have been studied with regard to their use as off-line dosimeters in radiotherapy. The structural characterisation has been performed by means of Raman spectroscopy. Their TL responses have been tested with radiotherapy beams ( sup 6 sup 0 Co photons, photons and electrons from a linear accelerator (Linac), 26 MeV protons from a TANDEM accelerator) in the dose range 0.1-7 Gy. The dosimetric characterisation has yielded a very good reproducibility, a very low dependence of the TL response on the type of particle and independence of the radiation energy. The TL signal is not influenced by the dose rate and exhibits a very low thermal fading. Moreover, the sensitivity of the diamond samples compares favourably with that of standard TLD100 dosimeters.

  18. Plasma Enhanced Chemical Vapour Deposition of Horizontally Aligned Carbon Nanotubes

    Directory of Open Access Journals (Sweden)

    Matthew T. Cole

    2013-05-01

    Full Text Available A plasma-enhanced chemical vapour deposition reactor has been developed to synthesis horizontally aligned carbon nanotubes. The width of the aligning sheath was modelled based on a collisionless, quasi-neutral, Child’s law ion sheath where these estimates were empirically validated by direct Langmuir probe measurements, thereby confirming the proposed reactors ability to extend the existing sheath fields by up to 7 mm. A 7 mbar growth atmosphere combined with a 25 W plasma permitted the concurrent growth and alignment of carbon nanotubes with electric fields of the order of 0.04 V μm−1 with linear packing densities of up to ~5 × 104 cm−1. These results open up the potential for multi-directional in situ alignment of carbon nanotubes providing one viable route to the fabrication of many novel optoelectronic devices.

  19. Light-induced chemical vapour deposition painting with titanium dioxide

    Science.gov (United States)

    Halary-Wagner, E.; Bret, T.; Hoffmann, P.

    2003-03-01

    Light-induced chemical vapour deposits of titanium dioxide are obtained from titanium tetra-isopropoxide (TTIP) in an oxygen and nitrogen atmosphere with a long pulse (250 ns) 308 nm XeCl excimer laser using a mask projection set-up. The demonstrated advantages of this technique are: (i) selective area deposition, (ii) precise control of the deposited thickness and (iii) low temperature deposition, enabling to use a wide range of substrates. A revolving mask system enables, in a single reactor load, to deposit shapes of controlled heights, which overlap to build up a complex pattern. Interferential multi-coloured deposits are achieved, and the process limitations (available colours and resolution) are discussed.

  20. Physical properties of chemical vapour deposited nanostructured carbon thin films

    Energy Technology Data Exchange (ETDEWEB)

    Mahadik, D.B.; Shinde, S.S.; Bhosale, C.H. [Electrochemical Materials Laboratory, Department of Physics, Shivaji University, Kolhapur, Maharashtra 416004 (India); Rajpure, K.Y., E-mail: rajpure@yahoo.com [Electrochemical Materials Laboratory, Department of Physics, Shivaji University, Kolhapur, Maharashtra 416004 (India)

    2011-02-03

    Research highlights: In the present paper, nanostructured carbon films are grown using a natural precursor 'turpentine oil (C{sub 10}H{sub 16})' as a carbon source in the simple thermal chemical vapour deposition method. The influence of substrate surface topography (viz. stainless steel, fluorine doped tin oxide coated quartz) and temperature on the evolution of carbon allotropes surfaces topography/microstructural and structural properties are investigated and discussed. - Abstract: A simple thermal chemical vapour deposition technique is employed for the deposition of carbon films by pyrolysing the natural precursor 'turpentine oil' on to the stainless steel (SS) and FTO coated quartz substrates at higher temperatures (700-1100 deg. C). In this work, we have studied the influence of substrate and deposition temperature on the evolution of structural and morphological properties of nanostructured carbon films. The films were characterized by using X-ray diffraction (XRD), scanning electron microscopy (SEM), contact angle measurements, Fourier transform infrared (FTIR) and Raman spectroscopy techniques. XRD study reveals that the films are polycrystalline exhibiting hexagonal and face-centered cubic structures on SS and FTO coated glass substrates respectively. SEM images show the porous and agglomerated surface of the films. Deposited carbon films show the hydrophobic nature. FTIR study displays C-H and O-H stretching vibration modes in the films. Raman analysis shows that, high ID/IG for FTO substrate confirms the dominance of sp{sup 3} bonds with diamond phase and less for SS shows graphitization effect with dominant sp{sup 2} bonds. It reveals the difference in local microstructure of carbon deposits leading to variation in contact angle and hardness, which is ascribed to difference in the packing density of carbon films, as observed also by Raman.

  1. Laser diagnostics of chemical vapour deposition of diamond films

    CERN Document Server

    Wills, J B

    2002-01-01

    Cavity ring down spectroscopy (CRDS) has been used to make diagnostic measurements of chemically activated CH sub 4 / H sub 2 gas mixtures during the chemical vapour deposition (CVD) of thin diamond films. Absolute absorbances, concentrations and temperatures are presented for CH sub 3 , NH and C sub 2 H sub 2 in a hot filament (HF) activated gas mixture and CH, C sub 2 and C sub 2 H sub 2 in a DC arc plasma jet activated mixture. Measurements of the radical species were made using a pulsed dye laser system to generate tuneable visible and UV wavelengths. These species have greatest concentration in the hottest, activated regions of the reactors. Spatial profiling of the number densities of CH sub 3 and NH radicals have been used as stringent tests of predictions of radical absorbance and number densities made by 3-D numerical simulations, with near quantitative agreement. O sub 2 has been shown to reside in the activated region of the Bristol DC arc jet at concentrations (approx 10 sup 1 sup 3 molecules / cm...

  2. Photo Initiated Chemical Vapour Deposition To Increase Polymer Hydrophobicity.

    Science.gov (United States)

    Bérard, Ariane; Patience, Gregory S; Chouinard, Gérald; Tavares, Jason R

    2016-01-01

    Apple growers face new challenges to produce organic apples and now many cover orchards with high-density polyethylene (HDPE) nets to exclude insects, rather than spraying insecticides. However, rainwater- associated wetness favours the development of apple scabs, Venturia inaequalis, whose lesions accumulate on the leaves and fruit causing unsightly spots. Treating the nets with a superhydrophobic coating should reduce the amount of water that passes through the net. Here we treat HDPE and polyethylene terephthalate using photo-initiated chemical vapour deposition (PICVD). We placed polymer samples in a quartz tube and passed a mixture of H2 and CO through it while a UVC lamp (254 nm) illuminated the surface. After the treatment, the contact angle between water droplets and the surface increased by an average of 20°. The contact angle of samples placed 70 cm from the entrance of the tube was higher than those at 45 cm and 20 cm. The PICVD-treated HDPE achieved a contact angle of 124°. Nets spray coated with a solvent-based commercial product achieved 180° but water ingress was, surprisingly, higher than that for nets with a lower contact angle. PMID:27531048

  3. The atmospheric chemical vapour deposition of coatings on glass

    CERN Document Server

    Sanderson, K D

    1996-01-01

    The deposition of thin films of indium oxide, tin doped indium oxide (ITO) and titanium nitride for solar control applications have been investigated by Atmospheric Chemical Vapour Deposition (APCVD). Experimental details of the deposition system and the techniques used to characterise the films are presented. Results from investigations into the deposition parameters, the film microstructure and film material properties are discussed. A range of precursors were investigated for the deposition of indium oxide. The effect of pro-mixing the vaporised precursor with an oxidant source and the deposition temperature has been studied. Polycrystalline In sub 2 O sub 3 films with a resistivity of 1.1 - 3x10 sup - sup 3 OMEGA cm were obtained with ln(thd) sub 3 , oxygen and nitrogen. The growth of ITO films from ln(thd) sub 3 , oxygen and a range of tin dopants is also presented. The effect of the dopant precursor, the doping concentration, deposition temperature and the effect of additives on film growth and microstr...

  4. Chemical vapour deposition of diamond coatings onto molybdenum dental tools

    International Nuclear Information System (INIS)

    The growth of polycrystalline diamond films onto molybdenum rods and dental burrs by using a new hot filament chemical vapour deposition (CVD) system has been investigated. Negative dc bias voltage relative to the filament was applied to the molybdenum substrate prior to deposition. This led to much improved film adhesion and increased nucleation density. There was a factor of four improvement in the adhesive force from 20 to 80 N when a bias voltage of -300 V was employed to the substrate. The CVD coated molybdenum dental burr was found to give much improved performance and lifetime compared to the conventional sintered diamond burr. The CVD diamond burr showed no signs of deterioration even after 1000 operations whereas the conventional sintered diamond burrs were ineffective after between 30 and 60 operations. This represents a 30-fold improvement when CVD is applied. CVD diamond growth onto dental burrs has the potential for replacing exciting technology by achieving better performance and lifetime in a cost-effective manner

  5. SYNTHESIS OF CARBON NANOSTRUCTURES BY PLASMA ENHANCED CHEMICAL VAPOUR DEPOSITION AT ATMOSPHERIC PRESSURE

    OpenAIRE

    Jašek Ondřej; Synek Petr; Zajíčková Lenka; Eliáš Marek; Kudrle Vít

    2010-01-01

    Carbon nanostructures present leading field in nanotechnology research. Wide range of chemical and physical methods was used for carbon nanostructures synthesis including arc discharges, laser ablation and chemical vapour deposition. Plasma enhanced chemical vapour deposition (PECVD) with its application in modern microelectronics industry became soon target of research in carbon nanostructures synthesis. The selection of the ideal growth process depends on the application. Most of PECVD tech...

  6. Simplified Monte Carlo simulations of chemical vapour deposition diamond growth

    International Nuclear Information System (INIS)

    A simple one-dimensional Monte Carlo model has been developed to simulate the chemical vapour deposition (CVD) of a diamond (100) surface. The model considers adsorption, etching/desorption, lattice incorporation, and surface migration along and across the dimer rows. The top of a step-edge is considered to have an infinite Ehrlich-Schwoebel potential barrier, so that mobile surface species cannot migrate off the edge. The reaction probabilities are taken from experimental or calculated literature values for standard CVD diamond conditions. The criterion used for the critical nucleus needed to form a new layer is considered to be two surface carbon species bonded together, which forms an immobile, unetchable step on the surface. This nucleus can arise from two migrating species meeting, or from direct adsorption of a carbon species next to a migrating species. The analysis includes film growth rate, surface roughness, and the evolving film morphology as a function of varying reaction probabilities. Using standard CVD diamond parameters, the simulations reveal that a smooth film is produced with apparent step-edge growth, with growth rates (∼1 μm h-1) consistent with experiment. The β-scission reaction was incorporated into the model, but was found to have very little effect upon growth rates or film morphology. Renucleation events believed to be due to reactive adsorbates, such as C atoms or CN groups, were modelled by creating random surface defects which form another type of critical nucleus upon which to nucleate a new layer. These were found to increase the growth rate by a factor of ∼10 when the conditions were such that the rate-limiting step for growth was new layer formation. For other conditions these surface defects led to layered 'wedding cake' structures or to rough irregular surfaces resembling those seen experimentally during CVD of nanocrystalline diamond.

  7. Carbon Nanotubes/Nanofibers by Plasma Enhanced Chemical Vapour Deposition

    Science.gov (United States)

    Teo, K. B. K.; Hash, D. B.; Bell, M. S.; Chhowalla, M.; Cruden, B. A.; Amaratunga, G. A. J.; Meyyappan, M.; Milne, W. I.

    2005-01-01

    Plasma enhanced chemical vapour deposition (PECVD) has been recently used for the production of vertically aligned carbon nanotubedfibers (CN) directly on substrates. These structures are potentially important technologically as electron field emitters (e.g. microguns, microwave amplifiers, displays), nanoelectrodes for sensors, filter media, superhydrophobic surfaces and thermal interface materials for microelectronics. A parametric study on the growth of CN grown by glow discharge dc-PECVD is presented. In this technique, a substrate containing thin film Ni catalyst is exposed to C2H2 and NH3 gases at 700 C. Without plasma, this process is essentially thermal CVD which produces curly spaghetti-like CN as seen in Fig. 1 (a). With the plasma generated by biasing the substrate at -6OOV, we observed that the CN align vertically during growth as shown in Fig. l(b), and that the magnitude of the applied substrate bias affects the degree of alignment. The thickness of the thin film Ni catalyst was found to determine the average diameter and inversely the length of the CN. The yield and density of the CN were controlled by the use of different diffusion barrier materials under the Ni catalyst. Patterned CN growth [Fig. l(c)], with la variation in CN diameter of 4.1% and 6.3% respectively, is achieved by lithographically defining the Ni thin film prior to growth. The shape of the structures could be varied from very straight nanotube-like to conical tip-like nanofibers by increasing the ratio of C2H2 in the gas flow. Due to the plasma decomposition of C2H2, amorphous carbon (a-C) is an undesirable byproduct which could coat the substrate during CN growth. Using a combination of depth profiled Auger electron spectroscopy to study the substrate and in-situ mass spectroscopy to examine gas phase neutrals and ions, the optimal conditions for a-C free growth of CN is determined.

  8. Current understanding of the growth of carbon nanotubes in catalytic chemical vapour deposition

    OpenAIRE

    Jourdain, Vincent; Bichara, Christophe

    2013-01-01

    Due to its higher degree of control and its scalability, catalytic chemical vapour deposition is now the prevailing synthesis method of carbon nanotubes. Catalytic chemical vapour deposition implies the catalytic conversion of a gaseous precursor into a solid material at the surface of reactive particles or of a continuous catalyst film acting as a template for the growing material. Significant progress has been made in the field of nanotube synthesis by this method although nanotube samples ...

  9. Laser diagnostics of chemical vapour deposition of diamond films

    International Nuclear Information System (INIS)

    Cavity ring down spectroscopy (CRDS) has been used to make diagnostic measurements of chemically activated CH4 / H2 gas mixtures during the chemical vapour deposition (CVD) of thin diamond films. Absolute absorbances, concentrations and temperatures are presented for CH3, NH and C2H2 in a hot filament (HF) activated gas mixture and CH, C2 and C2H2 in a DC arc plasma jet activated mixture. Measurements of the radical species were made using a pulsed dye laser system to generate tuneable visible and UV wavelengths. These species have greatest concentration in the hottest, activated regions of the reactors. Spatial profiling of the number densities of CH3 and NH radicals have been used as stringent tests of predictions of radical absorbance and number densities made by 3-D numerical simulations, with near quantitative agreement. O2 has been shown to reside in the activated region of the Bristol DC arc jet at concentrations (∼1013 molecules / cm3) sufficient for it to play an important role in the diamond film growth, with CH approximately equivalent in abundance. The average gas temperatures of both C2 and CH radicals in the DC arc jet are found to be 3200 ± 300 K in the free flowing plasma plume, as measured from Boltzmann plots and Doppler line widths. Both number densities and gas temperatures rise significantly within 5 mm of the substrate surface in what is termed the boundary layer. Temperatures rise to 4800 ± 400 K within 1 mm from the substrate surface where the average C2 and CH concentrations are a factor of approximately four greater than in the free flowing plume. The effects of changing process parameters such as methane fraction in the feed gas and activation input power on number densities and temperatures have also been investigated. In addition to these advances in our understanding of the diamond CVD process, a new spectroscopic technique, continuous wave cavity ring down spectroscopy (cw CRDS) using tuneable, continuous wave diode lasers, has

  10. Chemical vapour generation of silver: reduced palladium as permanent reaction modifier for enhanced performance

    Czech Academy of Sciences Publication Activity Database

    Matoušek, Tomáš; Sturgeon, R. E.

    2004-01-01

    Roč. 19, č. 8 (2004), s. 1014-1017. ISSN 0267-9477 R&D Projects: GA ČR GA203/01/0453 Institutional research plan: CEZ:AV0Z4031919 Keywords : chemical vapour generation * chemical modification * silver Subject RIV: CB - Analytical Chemistry, Separation Impact factor: 3.926, year: 2004

  11. Properties of alumina films by atmospheric pressure metal-organic chemical vapour deposition

    NARCIS (Netherlands)

    Haanappel, V.A.C.; Corbach, van H.D.; Fransen, T.; Gellings, P.J.

    1994-01-01

    Thin alumina films were deposited at low temperatures (290–420°C) on stainless steel, type AISI 304. The deposition process was carried out in nitrogen by metal-organic chemical vapour deposition using aluminum tri-sec-butoxide. The film properties including the protection of the underlying substrat

  12. Thermoluminescence Characteristics of a New Production of Chemical Vapour Deposition Diamond

    Energy Technology Data Exchange (ETDEWEB)

    Furetta, C.; Kitis, G.; Brambilla, A.; Jany, C.; Bergonzo, P.; Foulon, F

    1999-07-01

    The dosimetric properties are presented of a recent production of chemical vapour deposition diamond growth. Experimental data concerning the TL response as a function of dose, the energy response and fading behaviour are reported. Very preliminary results suggest that diamond can be used in TL mode as well as an activation detector. (author)

  13. Control of tin oxide film morphology by addition of hydrocarbons to the chemical vapour deposition process

    Czech Academy of Sciences Publication Activity Database

    Yates, H.M.; Evans, P.; Sheel, D.W.; Remeš, Zdeněk; Vaněček, Milan

    2010-01-01

    Roč. 519, č. 4 (2010), s. 1334-1340. ISSN 0040-6090 EU Projects: European Commission(XE) 214134 - N2P; European Commission(XE) 38885 - SE-POWERFOIL Institutional research plan: CEZ:AV0Z10100521 Keywords : alcohol * chemical vapour deposition * morphology * tin oxide Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 1.909, year: 2010

  14. Electronic transport and device prospects of monolayer molybdenum disulphide grown by chemical vapour deposition

    OpenAIRE

    Zhu, Wenjuan; Low, Tony; Lee, Yi-Hsien; Wang, Han; Farmer, Damon B.; Kong, Jing; Xia, Fengnian; Avouris, Phaedon

    2013-01-01

    Layered transition metal dichalcogenides display a wide range of attractive physical and chemical properties and are potentially important for various device applications. Here we report the electronic transport and device properties of monolayer molybdenum disulphide (MoS2) grown by chemical vapour deposition (CVD). We show that these devices have the potential to suppress short channel effects and have high critical breakdown electric field. However, our study reveals that the electronic pr...

  15. Interface study between nanostructured tantalum nitride films and carbon nanotubes grown by chemical vapour deposition

    International Nuclear Information System (INIS)

    Highlights: • Our paper deals with the understanding of the carbon nanotubes growth parameters following the use of specific thin nitride buffer films. • For a large choice of buffer, we use ultra thin films elaborated by the very new method: high power pulsed magnetron sputtering; it allows a larger nitrogen incorporation in the films and lead to out of equilibrium phase formation. • Then by a multiscale investigation, developing a structural, a chemical and a morphology approach, we lead to some conclusion on the correlation between the phase transition for the buffer and morphology transition for the CNTs. • That is a new and deep approach. - Abstract: We present the role of nitrogen content in tantalum nitride ultra-thin buffers, on the carbon nanotubes (CNTs) growth by chemical vapour deposition at 850 °C, assisted by ferrocene as catalyst source. Tantalum nitride (TaNx) films with a very large range of concentration x = [0, 1.8] and various nanostructures, from amorphous Ta(N) to Ta3N5, were deposited by Highly Pulsed Plasma Magnetron Sputtering. The buffer films are characterized after heat treatment at 850 °C, and after the CNT growth, by wide angle X-ray scattering in grazing incidence and scanning electron microscopy. The CNT diameter explored by transition electron microscopy shows an all-out value for under stoichiometric thin films (Ta1-N1−δ, Ta3-N5−δ) and a minimum value just above the stoichiometric phases (Ta1-N1+δ, Ta3-N5+δ). Firstly one shows that the buffer films under the heat treatment present surface modification highly dependent on their initial state, which influences the catalyst particles diffusion. Secondly at the stoichiometric TaN phase we show that a specific ternary phase FeTa2O6 is formed at the interface CNT/buffer, not present in the other cases, leading to a special CNT growth condition

  16. Chemical vapour deposition of thermochromic vanadium dioxide thin films for energy efficient glazing

    Energy Technology Data Exchange (ETDEWEB)

    Warwick, Michael E.A. [Department of Chemistry, University College London, Christopher Ingold Laboratories, 20 Gordon Street, London, WC1H 0AJ (United Kingdom); UCL Energy Institute, Central House, 14 Upper Woburn Place, London, WC1H 0NN (United Kingdom); Binions, Russell, E-mail: r.binions@qmul.ac.uk [School of Engineering and Materials Science, Queen Mary University of London, Mile End Road, London, E1 4NS (United Kingdom)

    2014-06-01

    Vanadium dioxide is a thermochromic material that undergoes a semiconductor to metal transitions at a critical temperature of 68 °C. This phase change from a low temperature monoclinic structure to a higher temperature rutile structure is accompanied by a marked change in infrared reflectivity and change in resistivity. This ability to have a temperature-modulated film that can limit solar heat gain makes vanadium dioxide an ideal candidate for thermochromic energy efficient glazing. In this review we detail the current challenges to such glazing becoming a commercial reality and describe the key chemical vapour deposition technologies being employed in the latest research. - Graphical abstract: Schematic demonstration of the effect of thermochromic glazing on solar radiation (red arrow represents IR radiation, black arrow represents all other solar radiation). - Highlights: • Vanadium dioxide thin films for energy efficient glazing. • Reviews chemical vapour deposition techniques. • Latest results for thin film deposition for vanadium dioxide.

  17. Control of surface and bulk crystalline quality in single crystal diamond grown by chemical vapour deposition

    OpenAIRE

    Friel, I.; Clewes, S L; Dhillon, H. K.; Perkins, N.; Twitchen, D. J.; Scarsbrook, G. A.

    2009-01-01

    In order to improve the performance of existing technologies based on single crystal diamond grown by chemical vapour deposition (CVD), and to open up new technologies in fields such as quantum computing or solid state and semiconductor disc lasers, control over surface and bulk crystalline quality is of great importance. Inductively coupled plasma (ICP) etching using an Ar/Cl gas mixture is demonstrated to remove sub-surface damage of mechanically processed surfaces, whilst maintaining macro...

  18. Graphene growth from reduced graphene oxide by chemical vapour deposition: seeded growth accompanied by restoration

    OpenAIRE

    Sung-Jin Chang; Moon Seop Hyun; Sung Myung; Min-A Kang; Jung Ho Yoo; Lee, Kyoung G.; Bong Gill Choi; Youngji Cho; Gaehang Lee; Tae Jung Park

    2016-01-01

    Understanding the underlying mechanisms involved in graphene growth via chemical vapour deposition (CVD) is critical for precise control of the characteristics of graphene. Despite much effort, the actual processes behind graphene synthesis still remain to be elucidated in a large number of aspects. Herein, we report the evolution of graphene properties during in-plane growth of graphene from reduced graphene oxide (RGO) on copper (Cu) via methane CVD. While graphene is laterally grown from R...

  19. Selective light induced chemical vapour deposition of titanium dioxide thin films

    OpenAIRE

    Wagner, Estelle; Hoffmann, Patrik

    2005-01-01

    Light Induced Chemical Vapour Deposition (LICVD) of titanium dioxide thin films is studied in this work. It is shown that this technique enables to deposit locally and selectively a chosen crystalline phase with a precise controlled thickness at low substrate temperature, allowing even the use of polymer substrates. A home made LICVD reactor was set up, consisting of a main chamber in which the substrate was placed on a temperature controlled plate and could be irradiated perpendicularly thro...

  20. Selective light induced chemical vapour deposition of titanium dioxide thin films

    OpenAIRE

    Wagner, Estelle

    2003-01-01

    Light Induced Chemical Vapour Deposition (LICVD) of titanium dioxide thin films is studied in this work. It is shown that this technique enables to deposit locally and selectively a chosen crystalline phase with a precise controlled thickness at low substrate temperature, allowing even the use of polymer substrates. A home made LICVD reactor was set up, consisting of a main chamber in which the substrate was placed on a temperature controlled plate and could be irradiated perpendicularly thro...

  1. Laser induced chemical vapour deposition of TiN coatings at atmospheric pressure

    OpenAIRE

    Croonen, Y.; Verspui, G.

    1993-01-01

    Laser induced Chemical Vapour Deposition of a wide variety of materials has been studied extensively at reduced pressures. However, for this technique to be economically and industrially applicable, processes at atmospheric pressure are preferred. A model study was made on the substrate-coating system molybdenum-titaniumnitride focussing on the feasibility to deposit TiN films locally at atmospheric pressure. The results of this study turned out to be very promising. A Nd-YAG laser beam ([MAT...

  2. Fundamental Studies of the Chemical Vapour Deposition of Graphene on Copper

    OpenAIRE

    Lewis, Amanda

    2014-01-01

    The chemical vapour deposition (CVD) of graphene is the most promising route for production of large-area graphene films. However there are still major challenges faced by the field, including control of the graphene coverage, quality, and the number of layers. These challenges can be overcome by developing a fundamental understanding of the graphene growth process. This thesis contributes to the growing body of work on graphene CVD by uniquely exploring the gas phas...

  3. Purification of Single-walled Carbon Nanotubes Grown by a Chemical Vapour Deposition (CVD) Method

    Institute of Scientific and Technical Information of China (English)

    2002-01-01

    A procedure for purification of single-walled carbon nanotubes(SWNTs) grown by the chemical vapour deposition (CVD) of carbon monooxide has been developed. Based on the result from TGA/DTA of as-prepared sample, the oxidation temperature was determined. The process included sonication, oxidation and acid washing steps. The purity and yield after purification were determined and estimated by TEM. Moreover, for the first time, a loop structure for CVD SWNTs has been observed.

  4. Green electroluminescence from ZnO/n-InP heterostructure fabricated by metalorganic chemical vapour deposition

    International Nuclear Information System (INIS)

    Vertically aligned ZnO films were deposited on n-InP by metalorganic chemical vapour deposition. X-ray diffraction, field emission scanning electron microscopy and photoluminescence measurements demonstrated that the ZnO films had good quality. By evaporating AuZn electrodes on both ZnO and InP surfaces, a ZnO-based light emitting device was fabricated. Under forward voltage, weak green emissions can be observed in darkness

  5. Green electroluminescence from ZnO/n-InP heterostructure fabricated by metalorganic chemical vapour deposition

    Energy Technology Data Exchange (ETDEWEB)

    Zhu Huichao [State Key Laboratory on Integrated Optoelectronics, College of Electronic Science and Engineering, Jilin University, Changchun 130012 (China); Zhang Baolin [State Key Laboratory on Integrated Optoelectronics, College of Electronic Science and Engineering, Jilin University, Changchun 130012 (China); Li Xiangping [State Key Laboratory on Integrated Optoelectronics, College of Electronic Science and Engineering, Jilin University, Changchun 130012 (China); Dong Xin [State Key Laboratory of Materials Modification by Laser, Ion, and Electron Beams, Department of Physics, Dalian University of Technology, Dalian 116023 (China); Li Wancheng [State Key Laboratory on Integrated Optoelectronics, College of Electronic Science and Engineering, Jilin University, Changchun 130012 (China); Guan Hesong [State Key Laboratory on Integrated Optoelectronics, College of Electronic Science and Engineering, Jilin University, Changchun 130012 (China); Cui Yongguo [State Key Laboratory of Materials Modification by Laser, Ion, and Electron Beams, Department of Physics, Dalian University of Technology, Dalian 116023 (China); Xia Xiaochuan [State Key Laboratory on Integrated Optoelectronics, College of Electronic Science and Engineering, Jilin University, Changchun 130012 (China); Yang Tianpeng [State Key Laboratory on Integrated Optoelectronics, College of Electronic Science and Engineering, Jilin University, Changchun 130012 (China); Chang Yuchun [State Key Laboratory on Integrated Optoelectronics, College of Electronic Science and Engineering, Jilin University, Changchun 130012 (China); Du Guotong [State Key Laboratory on Integrated Optoelectronics, College of Electronic Science and Engineering, Jilin University, Changchun 130012 (China)

    2007-09-07

    Vertically aligned ZnO films were deposited on n-InP by metalorganic chemical vapour deposition. X-ray diffraction, field emission scanning electron microscopy and photoluminescence measurements demonstrated that the ZnO films had good quality. By evaporating AuZn electrodes on both ZnO and InP surfaces, a ZnO-based light emitting device was fabricated. Under forward voltage, weak green emissions can be observed in darkness.

  6. Remote Microwave Plasma Enhanced Chemical Vapour Deposition of SiO2 Films : Oxygen Plasma Diagnostic

    OpenAIRE

    Regnier, C.; Desmaison, J.; Tristant, P.; Merle, D.

    1995-01-01

    Silicon oxide is deposited by remote microwave plasma enhanced chemical vapour deposition (RMPECVD). The silica films are produced by exciting oxygen in a microwave discharge while a mixture of 5% of silane diluted in argon is introduced downstream. In the afterglow, double Langmuir probe measurements and rotational temperatures deduced from optical emission spectroscopy (OES), show that the electron energy is transferred to the gas when the pressure increases (19 - 26 Pa). Therefore the elec...

  7. The pyrolytic decomposition of ATSB during chemical vapour deposition of thin alumina films

    OpenAIRE

    Haanappel, V.A.C.; Corbach, van, H.D.; Fransen, T.; Gellings, P.J.

    1994-01-01

    The effect of the deposition temperature and the partial pressure of water on the thermal decomposition chemistry of aluminium-tri-sec-butoxide (ATSB) during metal organic chemical vapour deposition (MOCVD) is reported. The MOCVD experiments were performed in nitrogen at atmospheric pressure. The partial pressure of ATSB was 0.026 kPa (0.20 mmHg) and that of water was between 0 and 0.026 kPa (0–0.20 mmHg). The pyrolytic decomposition chemistry of ATSB was studied by mass spectrometry at tempe...

  8. Pulsed injection metal organic chemical vapour deposition and characterisation of thin CaO films

    International Nuclear Information System (INIS)

    Thin films of CaO were grown on silicon (Si) and lanthanum aluminate (LaAlO3) substrates by pulsed injection metal-organic chemical vapour deposition in a vertical injection MOCVD system. Growth parameters were systematically varied to study their effect on film growth and quality and to determine the optimal growth conditions for this material. Film quality and growth rate were evaluated by atomic force microscopy, X-ray diffraction and Rutherford Backscattering Spectroscopy measurements. Optimised conditions allowed growing transparent, single phase films textured along the (0 0 l) direction.

  9. Deposition of diamond and boron nitride films by plasma chemical vapour deposition

    Energy Technology Data Exchange (ETDEWEB)

    Albella, J.M. [Universidad Autonoma, CSIC, Madrid (Spain). Inst. of Mater. Sci.; Gomez-Aleixandre, C. [Universidad Autonoma, CSIC, Madrid (Spain). Inst. of Mater. Sci.; Sanchez-Garrido, O. [Universidad Autonoma, CSIC, Madrid (Spain). Inst. of Mater. Sci.; Vazquez, L. [Universidad Autonoma, CSIC, Madrid (Spain). Inst. of Mater. Sci.; Martinez-Duart, J.M. [Universidad Autonoma, CSIC, Madrid (Spain). Inst. of Mater. Sci.

    1995-01-01

    The deposition problems of diamond and cubic boron nitride (c-BN) by chemical vapour deposition techniques are reviewed, with major emphasis on the nucleation and reaction mechanisms. A discussion is made of the main deposition parameters (i.e. gas mixture, substrate conditioning, plasma discharges etc.) which favour the formation of the cubic phase. Most of the work is devoted to diamond owing to the large progress attained in this material. In fact, the use of diamond as a hard protective coating is now on a commercial scale. By contrast, the preparation of c-BN layers with good characteristics still needs of further research. ((orig.))

  10. Fluidization and coating of very dense powders by fluidized bed chemical vapour deposition

    OpenAIRE

    Rodriguez, Philippe; Caussat, Brigitte; Ablitzer, Carine; Iltis, Xavière; Brothier, Méryl

    2013-01-01

    The hydrodynamic behaviour of a very dense tungsten powder, 75 µm in median diameter and 19,300 kg/m3 in grain density, has been studied in a fluidized bed at room temperature using nitrogen and argon as carrier gas. Even if fluidization was achieved, the small bed expansion indicated that it was imperfect. Then, the fluidization was studied at 400 °C in order to investigate the feasibility of coating this powder by Fluidized Bed Chemical Vapour Deposition (FBCVD). In particular, the influenc...

  11. Characterization of Si:O:C:H films fabricated using electron emission enhanced chemical vapour deposition

    International Nuclear Information System (INIS)

    Silicon-based polymers and oxides may be formed when vapours of oxygen-containing organosilicone compounds are exposed to energetic electrons drawn from a hot filament by a bias potential applied to a second electrode in a controlled atmosphere in a vacuum chamber. As little deposition occurs in the absence of the bias potential, electron impact fragmentation is the key mechanism in film fabrication using electron-emission enhanced chemical vapour deposition (EEECVD). The feasibility of depositing amorphous hydrogenated carbon films also containing silicon from plasmas of tetramethylsilane or hexamethyldisiloxane has already been shown. In this work, we report the deposition of diverse films from plasmas of tetraethoxysilane (TEOS)-argon mixtures and the characterization of the materials obtained. The effects of changes in the substrate holder bias (VS) and of the proportion of TEOS in the mixture (XT) on the chemical structure of the films are examined by infrared-reflection absorption spectroscopy (IRRAS) at near-normal and oblique incidence using unpolarised and p-polarised, light, respectively. The latter is particularly useful in detecting vibrational modes not observed when using conventional near-normal incidence. Elemental analyses of the film were carried out by X-ray photoelectron spectroscopy (XPS), which was also useful in complementary structural investigations. In addition, the dependencies of the deposition rate on VS and XT are presented

  12. Chemically vapour deposited diamond coatings on cemented tungsten carbides: Substrate pretreatments, adhesion and cutting performance

    International Nuclear Information System (INIS)

    Chemical vapour deposition (CVD) of diamond films onto Co-cemented tungsten carbide (WC-Co) tools and wear parts presents several problems due to interfacial graphitization induced by the binder phase and thermal expansion mismatch of diamond and WC-Co. Methods used to improve diamond film adhesion include substrate-modification processes that create a three-dimensional compositionally graded interface. This paper reviews substrate pretreatments and adhesion issues of chemically vapour deposited diamond films on WC-Co. The combined effect of pretreatments and substrate microstructure on the adhesive toughness and wear rate of CVD diamond in dry machining of highly abrasive materials was analyzed. The role of diamond film surface morphology on chip evacuation in dry milling of ceramics was also investigated by comparing feed forces of coated and uncoated mills. The overall tribological performance of diamond coated mills depended on coating microstructure and smoothness. The use of smother films did allow to reduce cutting forces by facilitating chip evacuation

  13. Zinc oxide nanostructures by chemical vapour deposition as anodes for Li-ion batteries

    International Nuclear Information System (INIS)

    Highlights: • ZnO nanostructures are grown by simple chemical vapour deposition. • Polycrystalline nanostructured porous thin film is obtained. • Film exhibits stable specific capacity (∼400 mA h g−1) after prolonged cycling. • CVD-grown ZnO nanostructures show promising prospects as Li-ion battery anode. - Abstract: ZnO nanostructures are grown by a simple chemical vapour deposition method directly on a stainless steel disc current collector and successfully tested in lithium cells. The structural/morphological characterization points out the presence of well-defined polycrystalline nanostructures having different shapes and a preferential orientation along the c-axis direction. In addition, the high active surface of the ZnO nanostructures, which accounts for a large electrode/electrolyte contact area, and the complete wetting with the electrolyte solution are considered to be responsible for the good electrical transport properties and the adequate electrochemical behaviour, as confirmed by cyclic voltammetry and galvanostatic charge/discharge cycling. Indeed, despite no binder or conducting additives are used, when galvanostatically tested in lithium cells, after an initial decay, the ZnO nanostructures can provide a rather stable specific capacity approaching 70 μA h cm−2 (i.e., around 400 mA h g−1) after prolonged cycling at 1 C, with very high Coulombic efficiency and an overall capacity retention exceeding 62%

  14. Chemical vapour deposition diamond coating on tungsten carbide dental cutting tools

    International Nuclear Information System (INIS)

    Diamond coatings on Co cemented tungsten carbide (WC-Co) hard metal tools are widely used for cutting non-ferrous metals. It is difficult to deposit diamond onto cutting tools, which generally have a complex geometry, using a single step growth process. This paper focuses on the deposition of polycrystalline diamond films onto dental tools, which possess 3D complex or cylindrical shape, employing a novel single step chemical vapour deposition (CVD) growth process. The diamond deposition is carried out in a hot filament chemical vapour deposition (HFCVD) reactor with a modified filament arrangement. The filament is mounted vertically with the drill held concentrically in between the filament coils, as opposed to the commonly used horizontal arrangement. This is a simple and inexpensive filament arrangement. In addition, the problems associated with adhesion of diamond films on WC-Co substrates are amplified in dental tools due to the very sharp edges and unpredictable cutting forces. The presence of Co, used as a binder in hard metals, generally causes poor adhesion. The amount of metallic Co on the surface can be reduced using a two step pre-treatment employing Murakami etching followed by an acid treatment. Diamond films are examined in terms of their growth rate, morphology, adhesion and cutting efficiency. We found that in the diamond coated dental tool the wear rate was reduced by a factor of three as compared to the uncoated tool

  15. Zinc oxide nanostructures by chemical vapour deposition as anodes for Li-ion batteries

    Energy Technology Data Exchange (ETDEWEB)

    Laurenti, M., E-mail: marco.laurenti@iit.it [Center for Space Human Robotics @Polito, Istituto Italiano di Tecnologia, Corso Trento, 21, 10129 Turin (Italy); Department of Applied Science and Technology – DISAT, Politecnico di Torino, Corso Duca degli Abruzzi 24, 10129 Turin (Italy); Garino, N. [Center for Space Human Robotics @Polito, Istituto Italiano di Tecnologia, Corso Trento, 21, 10129 Turin (Italy); Porro, S.; Fontana, M. [Center for Space Human Robotics @Polito, Istituto Italiano di Tecnologia, Corso Trento, 21, 10129 Turin (Italy); Department of Applied Science and Technology – DISAT, Politecnico di Torino, Corso Duca degli Abruzzi 24, 10129 Turin (Italy); Gerbaldi, C., E-mail: claudio.gerbaldi@polito.it [Center for Space Human Robotics @Polito, Istituto Italiano di Tecnologia, Corso Trento, 21, 10129 Turin (Italy); Department of Applied Science and Technology – DISAT, Politecnico di Torino, Corso Duca degli Abruzzi 24, 10129 Turin (Italy)

    2015-08-15

    Highlights: • ZnO nanostructures are grown by simple chemical vapour deposition. • Polycrystalline nanostructured porous thin film is obtained. • Film exhibits stable specific capacity (∼400 mA h g{sup −1}) after prolonged cycling. • CVD-grown ZnO nanostructures show promising prospects as Li-ion battery anode. - Abstract: ZnO nanostructures are grown by a simple chemical vapour deposition method directly on a stainless steel disc current collector and successfully tested in lithium cells. The structural/morphological characterization points out the presence of well-defined polycrystalline nanostructures having different shapes and a preferential orientation along the c-axis direction. In addition, the high active surface of the ZnO nanostructures, which accounts for a large electrode/electrolyte contact area, and the complete wetting with the electrolyte solution are considered to be responsible for the good electrical transport properties and the adequate electrochemical behaviour, as confirmed by cyclic voltammetry and galvanostatic charge/discharge cycling. Indeed, despite no binder or conducting additives are used, when galvanostatically tested in lithium cells, after an initial decay, the ZnO nanostructures can provide a rather stable specific capacity approaching 70 μA h cm{sup −2} (i.e., around 400 mA h g{sup −1}) after prolonged cycling at 1 C, with very high Coulombic efficiency and an overall capacity retention exceeding 62%.

  16. Chemical vapour etching-based porous silicon and grooving: Application in silicon solar cells processing

    Science.gov (United States)

    Ben Rabha, M.; Boujmil, M. F.; Saadoun, M.; Bessaïs, B.

    2005-06-01

    Sponge like porous silicon (PS) was formed by a simple and low cost chemical vapour etching (CVE) method and applied in polycrystalline silicon (mc-Si) solar cells processing. The CVE method consists of exposing Si wafers to HNO3/HF vapours. It was shown that 8 min of HNO3/HF CVE (volume ratio = 1/7) is sufficient to form optimized PS layers on the emitter of mc-Si cells. The CVE-based PS can simultaneously passivate the Si surface and serves as an effective antireflection coating (ARC). As a result, the reflectivity decreases by about 60% of its initial value and the internal quantum efficiency is improved, particularly in the short wavelength region. For acid vapours rich in HNO3 (HNO3/HF >1/4), the CVE method favours the formation of a (NH4)2SiF6 powder, which is highly soluble in water. These findings let us achieve anisotropic grooving that enables to groove mc-Si wafers locally and in depth using an adequate anti-acid mask. The CVE - based grooving technique was used to form buried metallic contacts on the rear and frontal surface of the Si wafer in order to improve the current collection in mc-Si solar cells. No alteration of the spectral response in the long wavelength range was observed in mc-Si cells with rear-buried contacts. Adjustments of theoretical spectral responses to experimental ones show an increase in the effective electron diffusion length (Ln), which was attributed to Al gettering (passivation) at grain boundaries and to the reduction of the effective thickness of the base of the cells.

  17. Chemical vapour etching-based porous silicon and grooving: Application in silicon solar cells processing

    Energy Technology Data Exchange (ETDEWEB)

    Ben Rabha, M.; Boujmil, M.F.; Saadoun, M.; Bessais, B. [Institut National de Recherche Scientifique et Technique, Laboratoire de Photovoltaique et des Semiconducteurs, BP 95, 2050 Hammam-Lif (Tunisia)

    2005-06-01

    Sponge like porous silicon (PS) was formed by a simple and low cost chemical vapour etching (CVE) method and applied in polycrystalline silicon (mc-Si) solar cells processing. The CVE method consists of exposing Si wafers to HNO{sub 3}/HF vapours. It was shown that 8 min of HNO{sub 3}/HF CVE (volume ratio = 1/7) is sufficient to form optimized PS layers on the emitter of mc-Si cells. The CVE-based PS can simultaneously passivate the Si surface and serves as an effective antireflection coating (ARC). As a result, the reflectivity decreases by about 60% of its initial value and the internal quantum efficiency is improved, particularly in the short wavelength region. For acid vapours rich in HNO{sub 3} (HNO{sub 3}/HF >1/4), the CVE method favours the formation of a (NH{sub 4}){sub 2}SiF{sub 6} powder, which is highly soluble in water. These findings let us achieve anisotropic grooving that enables to groove mc-Si wafers locally and in depth using an adequate anti-acid mask. The CVE - based grooving technique was used to form buried metallic contacts on the rear and frontal surface of the Si wafer in order to improve the current collection in mc-Si solar cells. No alteration of the spectral response in the long wavelength range was observed in mc-Si cells with rear-buried contacts. Adjustments of theoretical spectral responses to experimental ones show an increase in the effective electron diffusion length (Ln), which was attributed to Al gettering (passivation) at grain boundaries and to the reduction of the effective thickness of the base of the cells. (copyright 2005 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  18. High quality plasma enhanced chemical vapour deposited silicon oxide gas barrier coatings on polyester films

    International Nuclear Information System (INIS)

    Silicon oxide barrier coatings fabricated by a plasma enhanced chemical vapour deposition roll-to-roll process on polyester film have demonstrated impressive properties as a barrier to water vapour permeation. This study highlights the influence of the substrate on these coatings as we find that heat stabilised poly(ethylene terephthalate) (PET), with or without an additional acrylate primer layer, and poly(ethylene naphthalate) (PEN) produce superior composites than untreated PET film in terms of gas barrier. The barrier layers on PET and filled PET substrates, for which the barrier performance is within the detectable range of our measurement, have an activation energy to water permeation that increases with the thickness of the silica. For the thickest silica this is an increase of 26 kJ mol-1 over that from the uncoated substrate. We attribute this to the creation of highly tortuous, size-hindered pathways and the decoupling of defects as the coating is deposited in multiple passes. Using a more sensitive detection technique we measure a water vapour transmission rate value as low as 2 x 10-4 g m-2 day-1 for 1 μm thick coatings on PEN. Such a good barrier is observed for these thick coatings due to the high degree of carbon detected in the films that makes them less brittle than pure SiO2 layers. Substrate surface roughness is found to influence the morphology of the SiOx films but does not seem to adversely affect the barrier performance of the composites

  19. Characterization of Thin Films Deposited with Precursor Ferrocene by Plasma Enhanced Chemical Vapour Deposition

    Institute of Scientific and Technical Information of China (English)

    YAO Kailun; ZHENG Jianwan; LIU Zuli; JIA Lihui

    2007-01-01

    In this paper,the characterization of thin films,deposited with the precursor ferrocene(FcH)by the plasma enhanced chemical vapour deposition(PECVD)technique,was investigated.The films were measured by Scanning Electronic Microscopy(SEM),Atomic Force Microscopy(AFM),Electron Spectroscopy for Chemical Analysis(ESCA),and superconducting Quantum Interference Device(SQUID).It was observed that the film's layer is homogeneous in thickness and has a dense morphology without cracks.The surface roughness is about 36 nm.From the results of ESCA,it can be inferred that the film mainly contains the compound FeOOH,and carbon is combined with oxygen in different forms under different supply-powers.The hysteresis loops indicate that the film is of soft magnetism.

  20. Wetting behaviour of carbon nitride nanostructures grown by plasma enhanced chemical vapour deposition technique

    International Nuclear Information System (INIS)

    Highlights: • Carbon nitride films were prepared by using radio frequency plasma enhanced chemical vapour deposition system by altering the electrode distance. • The effect of electrode distance on surface morphology, surface roughness, chemical bonding and hydrophobic behaviour has been studied. • Hydrophobic behaviour were studied by measuring contact angle and calculating surface energy. • CNx nanostructures show super-hydrophobic behaviour. • We report a tunable transition of hydrophilic to super-hydrophobic behaviour of film as electrode distance is reduced. - Abstract: Tuning the wettability of various coating materials by simply controlling the deposition parameters is essential for various specific applications. In this work, carbon nitride (CNx) films were deposited on silicon (1 1 1) substrates using radio-frequency plasma enhanced chemical vapour deposition employing parallel plate electrode configuration. Effects of varying the electrode distance (DE) on the films’ structure and bonding properties were investigated using Field emission scanning electron microscopy, Atomic force microscopy, Fourier transform infrared and X-ray photoemission spectroscopy. The wettability of the films was analyzed using water contact angle measurements. At high DE, the CNx films’ surface was smooth and uniform. This changed into fibrous nanostructures when DE was decreased. Surface roughness of the films increased with this morphological transformation. Nitrogen incorporation increased with decrease in DE which manifested the increase in both relative intensities of C=N to C=C and N−H to O−H bonds. sp2-C to sp3-C ratio increased as DE decreased due to greater deformation of sp2 bonded carbon at lower DE. The films’ characteristics changed from hydrophilic to super-hydrophobic with the decrease in DE. Roughness ratio, surface porosity and surface energy calculated from contact angle measurements were strongly dependent on the morphology, surface

  1. Low resistance polycrystalline diamond thin films deposited by hot filament chemical vapour deposition

    Indian Academy of Sciences (India)

    Mahtab Ullah; Ejaz Ahmed; Abdelbary Elhissi; Waqar Ahmed

    2014-05-01

    Polycrystalline diamond thin films with outgrowing diamond (OGD) grains were deposited onto silicon wafers using a hydrocarbon gas (CH4) highly diluted with H2 at low pressure in a hot filament chemical vapour deposition (HFCVD) reactor with a range of gas flow rates. X-ray diffraction (XRD) and SEM showed polycrystalline diamond structure with a random orientation. Polycrystalline diamond films with various textures were grown and (111) facets were dominant with sharp grain boundaries. Outgrowth was observed in flowerish character at high gas flow rates. Isolated single crystals with little openings appeared at various stages at low gas flow rates. Thus, changing gas flow rates had a beneficial influence on the grain size, growth rate and electrical resistivity. CVD diamond films gave an excellent performance for medium film thickness with relatively low electrical resistivity and making them potentially useful in many industrial applications.

  2. Deposition of indium tin oxide by atmospheric pressure chemical vapour deposition

    International Nuclear Information System (INIS)

    We report the deposition of indium tin oxide (ITO) by atmospheric pressure chemical vapour deposition (APCVD). This process is potentially scalable for high throughput, large area production. We utilised a previously unreported precursor combination; dimethylindium acetylacetonate, [Me2In(acac)] and monobutyltintrichloride, MBTC. [Me2In(acac)] is a volatile solid. It is more stable and easier to handle than traditional indium oxide precursors such as pyrophoric trialkylindium compounds. Monobutyltintrichloride (MBTC) is also easily handled and can be readily vaporised. It is compatible with the process conditions required for using [Me2In(acac)]. Cubic ITO was deposited at a substrate temperature of 550 °C with growth rates exceeding 15 nm/s and growth efficiencies of between 20 and 30%. Resistivity was 3.5 × 10−4 Ω cm and transmission for a 200 nm film was > 85% with less than 2% haze.

  3. Deposition of fluorine doped indium oxide by atmospheric pressure chemical vapour deposition

    International Nuclear Information System (INIS)

    We report the deposition of fluorine doped indium oxide by atmospheric pressure chemical vapour deposition (APCVD) using a previously unreported precursor combination; dimethylindium acetylacetonate, [Me2In(acac)] and trifluoroacetic acid (TFA). This process is potentially scalable for high throughput, large area production. [Me2In(acac)] is a volatile solid. It is more stable and easier to handle than traditional indium oxide precursors such as pyrophoric trialkylindium compounds. Cubic fluorine doped indium oxide (F.In2O3) was deposited at a substrate temperature of 550 °C with growth rates exceeding 8 nm/s. Resistivity was 8 × 10−4 Ω cm and transmission for a 200 nm film was > 80% with less than 1% haze.

  4. Characterization of doped hydrogenated nanocrystalline silicon films prepared by plasma enhanced chemical vapour deposition

    Institute of Scientific and Technical Information of China (English)

    Wang Jin-Liang; Wu Er-Xing

    2007-01-01

    The B-and P-doped hydrogenated nanocrystalline silicon films (nc-Si:H) are prepared by plasma-enhanced chemical vapour deposition (PECVD) .The microstructures of doped nc-Si:H films are carefully and systematically char acterized by using high resolution electron microscopy (HREM) ,Raman scattering,x-ray diffraction (XRD) ,Auger electron spectroscopy (AES) ,and resonant nucleus reaction (RNR) .The results show that as the doping concentration of PH3 increases,the average grain size (d) tends to decrease and the crystalline volume percentage (Xc) increases simultaneously.For the B-doped samples,as the doping concentration of B2H6 increases,no obvious change in the value of d is observed,but the value of Xc is found to decrease.This is especially apparent in the case of heavy B2H6 doped samples,where the films change from nanocrystalline to amorphous.

  5. Magnetic and cytotoxic properties of hot-filament chemical vapour deposited diamond

    Energy Technology Data Exchange (ETDEWEB)

    Zanin, Hudson, E-mail: hudsonzanin@gmail.com [Faculdade de Engenharia Eletrica e Computacao, Departamento de Semicondutores, Instrumentos e Fotonica, Universidade Estadual de Campinas, UNICAMP, Av. Albert Einstein N.400, CEP 13 083-852 Campinas, Sao Paulo (Brazil); Peterlevitz, Alfredo Carlos; Ceragioli, Helder Jose [Faculdade de Engenharia Eletrica e Computacao, Departamento de Semicondutores, Instrumentos e Fotonica, Universidade Estadual de Campinas, UNICAMP, Av. Albert Einstein N.400, CEP 13 083-852 Campinas, Sao Paulo (Brazil); Rodrigues, Ana Amelia; Belangero, William Dias [Laboratorio de Biomateriais em Ortopedia, Faculdade de Ciencias Medicas, Universidade Estadual de Campinas, Rua Cinco de Junho 350 CEP 13083970, Campinas, Sao Paulo (Brazil); Baranauskas, Vitor [Faculdade de Engenharia Eletrica e Computacao, Departamento de Semicondutores, Instrumentos e Fotonica, Universidade Estadual de Campinas, UNICAMP, Av. Albert Einstein N.400, CEP 13 083-852 Campinas, Sao Paulo (Brazil)

    2012-12-01

    Microcrystalline (MCD) and nanocrystalline (NCD) magnetic diamond samples were produced by hot-filament chemical vapour deposition (HFCVD) on AISI 316 substrates. Energy Dispersive X-ray Spectroscopy (EDS) measurements indicated the presence of Fe, Cr and Ni in the MCD and NCD samples, and all samples showed similar magnetisation properties. Cell viability tests were realised using Vero cells, a type of fibroblastic cell line. Polystyrene was used as a negative control for toxicity (NCT). The cells were cultured under standard cell culture conditions. The proliferation indicated that these magnetic diamond samples were not cytotoxic. - Highlights: Black-Right-Pointing-Pointer Polycrystalline diamonds doped with Fe, Cr and Ni acquire ferromagnetic properties. Black-Right-Pointing-Pointer CVD diamonds have been prepared with magnetic and semiconductor properties. Black-Right-Pointing-Pointer Micro/nanocrystalline diamonds show good cell viability with fibroblast proliferation.

  6. Elaboration of Bi 2Se 3 by metalorganic chemical vapour deposition

    Science.gov (United States)

    Giani, A.; Al Bayaz, A.; Foucaran, A.; Pascal-Delannoy, F.; Boyer, A.

    2002-03-01

    For the first time, Bi 2Se 3 thin films were elaborated by metalorganic chemical vapour deposition (MOCVD) using trimethylbismuth (TMBi) and diethylselenium (DESe) as metalorganic sources. The MOCVD elaboration of Bi 2Se 3 was carried out in a horizontal reactor for a substrate temperature ( Tg) varying from 450°C to 500°C, a total hydrogen flow rate DT=3 l min -1, RVI/V ratio >14 and TMBi partial pressure lower than 1.10 -4 atm. By X-ray diffraction and SEM observation, we noticed the polycrystalline structure of the layers typical preferential c-orientation and confirm the hexagonal structure. The microprobe data indicate that the best stoichiometry of Bi 2Se 3 was achieved. These films always displayed n-type conduction, and the maximum value of thermoelectric power α was found to be close to -120 μV/K.

  7. Microwave plasma-enhanced chemical vapour deposition growth of carbon nanostructures

    Directory of Open Access Journals (Sweden)

    Shivan R. Singh

    2010-05-01

    Full Text Available The effect of various input parameters on the production of carbon nanostructures using a simple microwave plasma-enhanced chemical vapour deposition technique has been investigated. The technique utilises a conventional microwave oven as the microwave energy source. The developed apparatus is inexpensive and easy to install and is suitable for use as a carbon nanostructure source for potential laboratory-based research of the bulk properties of carbon nanostructures. A result of this investigation is the reproducibility of specific nanostructures with the variation of input parameters, such as carbon-containing precursor and support gas flow rate. It was shown that the yield and quality of the carbon products is directly controlled by input parameters. Transmission electron microscopy and scanning electron microscopy were used to analyse the carbon products; these were found to be amorphous, nanotubes and onion-like nanostructures.

  8. Synthesis of low leakage current chemical vapour deposited (CVD) diamond films for particle detection

    International Nuclear Information System (INIS)

    We report on synthesis of diamond films by direct current glow discharge chemical vapour deposition (CVD) prepared at different deposition conditions, for application in high energy physics. The synthesis apparatus is briefly described. Continuous undoped diamond samples have been grown onto Mo substrates with a deposition area up to 1 cm2 and an electrical resistivity as high as 1013 Ωcm. The deposition parameters are related to the material properties of the diamonds, investigated by optical spectroscopy, electron microscopy and diffraction analysis. Decreasing the linear growth rate results in good quality films with small remnants of graphite-like phases. The high crystalline quality and phase purity of the films are related to very low values of leakage currents. The particle induced conductivity of these samples is also studied and preliminary results on charge collection efficiency are presented. (orig.)

  9. Functional ZnO/polymer core-shell nanowires fabricated by oxidative chemical vapour deposition

    International Nuclear Information System (INIS)

    Functional ZnO-nanowire/polymer core-shell heterostructures were realized using oxidative chemical vapour deposition (oCVD). This dry and versatile technique allows uniform coating of semiconductor nanowires with polymers and simultaneous doping control of the shell. Here, 100 nm thick, p-doped shells of poly(3,4-ethylenedioxythiophene) (PEDOT) were deposited around n-conductive ZnO nanowires. Energy-dispersive x-ray spectroscopy confirms the incorporation of Br dopants into the PEDOT shell, and the resulting p-conductivity of the polymer shell is demonstrated by electrical measurements on nanowire arrays. Photoluminescence spectroscopy points to reactions of Br with the ZnO surface but proves that the nanowires show only little degradation of their optical properties. (paper)

  10. Optimization of process parameter for synthesis of silicon quantum dots using low pressure chemical vapour deposition

    Indian Academy of Sciences (India)

    Dipika Barbadikar; Rashmi Gautam; Sanjay Sahare; Rajendra Patrikar; Jatin Bhatt

    2013-06-01

    Si quantum dots-based structures are studied recently for performance enhancement in electronic devices. This paper presents an attempt to get high density quantum dots (QDs) by low pressure chemical vapour deposition (LPCVD) on SiO2 substrate. Surface treatment, annealing and rapid thermal processing (RTP) are performed to study their effect on size and density of QDs. The samples are also studied using Fourier transformation infrared spectroscopy (FTIR), atomic force microscopy (AFM), scanning electron microscopy (SEM) and photoluminescence study (PL). The influence of Si–OH bonds formed due to surface treatment on the density of QDs is discussed. Present study also discusses the influence of surface treatment and annealing on QD formation.

  11. High temperature stability of nanocrystalline anatase powders prepared by chemical vapour synthesis under varying process parameters

    Science.gov (United States)

    Ahmad, Md. Imteyaz; Fasel, Claudia; Mayer, Thomas; Bhattacharya, S. S.; Hahn, Horst

    2011-05-01

    Systematic variation in the high temperature stability of nanocrystalline anatase powders prepared by chemical vapour synthesis (CVS) using titanium (IV) isopropoxide under varying flow rates of oxygen and helium was obtained by progressively shifting the decomposition product from C 3H 6 to CO 2. The as-synthesised powders were characterised by high temperature X-ray diffraction (HTXRD), simultaneous thermo-gravimetric analyses (STA), X-ray photoelectron spectroscopy (XPS), Fourier transform infrared spectroscopy (FTIR) and transmission electron microscopy (TEM). It was observed that the anatase to rutile transformation temperature progressively increased for samples synthesised at higher O 2/He flow rate ratios. The improved anatase stability was attributed to the presence of incorporated carbon within the titania structure and confirmed by a high temperature carbon desorption peak.

  12. High temperature stability of nanocrystalline anatase powders prepared by chemical vapour synthesis under varying process parameters

    Energy Technology Data Exchange (ETDEWEB)

    Ahmad, Md. Imteyaz [Materials Testing Facility, Materials Forming Laboratory, Department of Metallurgical and Materials Engineering, Indian Institute of Technology Madras, Chennai 600036 (India); Joint Research Laboratory Nanomaterials, Technische Universitaet Darmstadt and Forschungszentrum Karlsruhe, 64287 Darmstadt (Germany); Fasel, Claudia [Disperse Feststoffe, Institute of Materials Science, Darmstadt University of Technology, 64287 Darmstadt (Germany); Mayer, Thomas [Oberflaechenforschung, Institute of Materials Science, Darmstadt University of Technology, 64287 Darmstadt (Germany); Bhattacharya, S.S., E-mail: ssb@iitm.ac.in [Materials Testing Facility, Materials Forming Laboratory, Department of Metallurgical and Materials Engineering, Indian Institute of Technology Madras, Chennai 600036 (India); Hahn, Horst [Joint Research Laboratory Nanomaterials, Technische Universitaet Darmstadt and Forschungszentrum Karlsruhe, 64287 Darmstadt (Germany)

    2011-05-15

    Systematic variation in the high temperature stability of nanocrystalline anatase powders prepared by chemical vapour synthesis (CVS) using titanium (IV) isopropoxide under varying flow rates of oxygen and helium was obtained by progressively shifting the decomposition product from C{sub 3}H{sub 6} to CO{sub 2}. The as-synthesised powders were characterised by high temperature X-ray diffraction (HTXRD), simultaneous thermo-gravimetric analyses (STA), X-ray photoelectron spectroscopy (XPS), Fourier transform infrared spectroscopy (FTIR) and transmission electron microscopy (TEM). It was observed that the anatase to rutile transformation temperature progressively increased for samples synthesised at higher O{sub 2}/He flow rate ratios. The improved anatase stability was attributed to the presence of incorporated carbon within the titania structure and confirmed by a high temperature carbon desorption peak.

  13. Graphene growth from reduced graphene oxide by chemical vapour deposition: seeded growth accompanied by restoration

    Science.gov (United States)

    Chang, Sung-Jin; Hyun, Moon Seop; Myung, Sung; Kang, Min-A.; Yoo, Jung Ho; Lee, Kyoung G.; Choi, Bong Gill; Cho, Youngji; Lee, Gaehang; Park, Tae Jung

    2016-03-01

    Understanding the underlying mechanisms involved in graphene growth via chemical vapour deposition (CVD) is critical for precise control of the characteristics of graphene. Despite much effort, the actual processes behind graphene synthesis still remain to be elucidated in a large number of aspects. Herein, we report the evolution of graphene properties during in-plane growth of graphene from reduced graphene oxide (RGO) on copper (Cu) via methane CVD. While graphene is laterally grown from RGO flakes on Cu foils up to a few hundred nanometres during CVD process, it shows appreciable improvement in structural quality. The monotonous enhancement of the structural quality of the graphene with increasing length of the graphene growth from RGO suggests that seeded CVD growth of graphene from RGO on Cu surface is accompanied by the restoration of graphitic structure. The finding provides insight into graphene growth and defect reconstruction useful for the production of tailored carbon nanostructures with required properties.

  14. Graphene growth from reduced graphene oxide by chemical vapour deposition: seeded growth accompanied by restoration

    Science.gov (United States)

    Chang, Sung-Jin; Hyun, Moon Seop; Myung, Sung; Kang, Min-A; Yoo, Jung Ho; Lee, Kyoung G.; Choi, Bong Gill; Cho, Youngji; Lee, Gaehang; Park, Tae Jung

    2016-01-01

    Understanding the underlying mechanisms involved in graphene growth via chemical vapour deposition (CVD) is critical for precise control of the characteristics of graphene. Despite much effort, the actual processes behind graphene synthesis still remain to be elucidated in a large number of aspects. Herein, we report the evolution of graphene properties during in-plane growth of graphene from reduced graphene oxide (RGO) on copper (Cu) via methane CVD. While graphene is laterally grown from RGO flakes on Cu foils up to a few hundred nanometres during CVD process, it shows appreciable improvement in structural quality. The monotonous enhancement of the structural quality of the graphene with increasing length of the graphene growth from RGO suggests that seeded CVD growth of graphene from RGO on Cu surface is accompanied by the restoration of graphitic structure. The finding provides insight into graphene growth and defect reconstruction useful for the production of tailored carbon nanostructures with required properties. PMID:26961409

  15. Chemical vapour deposition of tungsten and tungsten silicide layers for applications in novel silicon technology

    CERN Document Server

    Li, F X

    2002-01-01

    This work was a detailed investigation into the Chemical Vapour Deposition (CVD) of tungsten and tungsten silicide for potential applications in integrated circuit (IC) and other microelectronic devices. These materials may find novel applications in contact schemes for transistors in advanced ICs, buried high conductivity layers in novel Silicon-On-Insulator (SOI) technology and in power electronic devices. The CVD techniques developed may also be used for metal coating of recessed or enclosed features which may occur in novel electronic or electromechanical devices. CVD of tungsten was investigated using the silicon reduction reaction of WF sub 6. W layers with an optimum self-limiting thickness of 100 nm and resistivity 20 mu OMEGA centre dot cm were produced self-aligned to silicon. A hydrogen passivation technique was developed as part of the wafer pre-clean schedule and proved essential in achieving optimum layer thickness. Layers produced by this approach are ideal for intimate contact to shallow junct...

  16. Al-Induced Crystallization Growth of Si Films by Inductively Coupled Plasma Chemical Vapour Deposition

    Institute of Scientific and Technical Information of China (English)

    LI Jun-Shuai; WANG Jin-Xiao; YIN Min; GAO Ping-Qi; HE De-Yan

    2006-01-01

    Polycrystalline Si (poly-Si) films are in situ grown on Al-coated glass substrates by inductively coupled plasma chemical vapour deposition at a temperature as low as 350 C. Compared to the traditional annealing crystallization of amorphous Si/Al-layer structures, no layer exchange is observed and the resultant poly-Si film is much thicker than Al layer. By analysing the depth profiles of the elemental composition, no remains of Al atoms are detected in Si layer within the limit (< 0.01 at. %) of the used evaluations. It is indicated that the poly-Si material obtained by Al-induced crystallization growth has more potential applications than that prepared by annealing the amorphous Si/Al-layer structures.

  17. Synthesis, characterization and sintering of nanocrystalline titania powders produced by chemical vapour synthesis

    International Nuclear Information System (INIS)

    The chemical vapour synthesis (CVS) route is a versatile process that can be used for the synthesis of nanocrystalline ceramics with very small crystallite sizes having a narrow particle size distribution. In this study, a CVS technique was used to prepare nanocrystalline titania from tetraisopropyl orthotitanate at a processing temperature of 1273 K (1000 deg, C). High resolution transmission electron microscopy, x-ray diffraction and nitrogen adsorption techniques were used for the characterization of the as-synthesized powders. Green bodies were produced by a combination of uniaxial and cold isostatic pressing, which were then sintered. A simple pressureless sintering route was established that led to the production of a dense titania ceramic with a uniform microstructure and an average grain size well in the nanophase regime

  18. Magnetic and cytotoxic properties of hot-filament chemical vapour deposited diamond

    International Nuclear Information System (INIS)

    Microcrystalline (MCD) and nanocrystalline (NCD) magnetic diamond samples were produced by hot-filament chemical vapour deposition (HFCVD) on AISI 316 substrates. Energy Dispersive X-ray Spectroscopy (EDS) measurements indicated the presence of Fe, Cr and Ni in the MCD and NCD samples, and all samples showed similar magnetisation properties. Cell viability tests were realised using Vero cells, a type of fibroblastic cell line. Polystyrene was used as a negative control for toxicity (NCT). The cells were cultured under standard cell culture conditions. The proliferation indicated that these magnetic diamond samples were not cytotoxic. - Highlights: ► Polycrystalline diamonds doped with Fe, Cr and Ni acquire ferromagnetic properties. ► CVD diamonds have been prepared with magnetic and semiconductor properties. ► Micro/nanocrystalline diamonds show good cell viability with fibroblast proliferation.

  19. Evaluation of freestanding boron-doped diamond grown by chemical vapour deposition as substrates for vertical power electronic devices

    Energy Technology Data Exchange (ETDEWEB)

    Issaoui, R.; Achard, J.; Tallaire, A.; Silva, F.; Gicquel, A. [LSPM-CNRS (formerly LIMHP), Universite Paris 13, 99, Avenue Jean-Baptiste Clement, 93430 Villetaneuse (France); Bisaro, R.; Servet, B.; Garry, G. [Thales Research and Technology France, Campus de Polytechnique, 1 Avenue Augustin Fresnel, F-91767 Palaiseau Cedex (France); Barjon, J. [GEMaC-CNRS, Universite de Versailles Saint Quentin Batiment Fermat, 45 Avenue des Etats-Unis, 78035 Versailles Cedex (France)

    2012-03-19

    In this study, 4 x 4 mm{sup 2} freestanding boron-doped diamond single crystals with thickness up to 260 {mu}m have been fabricated by plasma assisted chemical vapour deposition. The boron concentrations measured by secondary ion mass spectroscopy were 10{sup 18} to 10{sup 20} cm{sup -3} which is in a good agreement with the values calculated from Fourier transform infrared spectroscopy analysis, thus indicating that almost all incorporated boron is electrically active. The dependence of lattice parameters and crystal mosaicity on boron concentrations have also been extracted from high resolution x-ray diffraction experiments on (004) planes. The widths of x-ray rocking curves have globally shown the high quality of the material despite a substantial broadening of the peak, indicating a decrease of structural quality with increasing boron doping levels. Finally, the suitability of these crystals for the development of vertical power electronic devices has been confirmed by four-point probe measurements from which electrical resistivities as low as 0.26 {Omega} cm have been obtained.

  20. Evaluation of freestanding boron-doped diamond grown by chemical vapour deposition as substrates for vertical power electronic devices

    International Nuclear Information System (INIS)

    In this study, 4 x 4 mm2 freestanding boron-doped diamond single crystals with thickness up to 260 μm have been fabricated by plasma assisted chemical vapour deposition. The boron concentrations measured by secondary ion mass spectroscopy were 1018 to 1020 cm-3 which is in a good agreement with the values calculated from Fourier transform infrared spectroscopy analysis, thus indicating that almost all incorporated boron is electrically active. The dependence of lattice parameters and crystal mosaicity on boron concentrations have also been extracted from high resolution x-ray diffraction experiments on (004) planes. The widths of x-ray rocking curves have globally shown the high quality of the material despite a substantial broadening of the peak, indicating a decrease of structural quality with increasing boron doping levels. Finally, the suitability of these crystals for the development of vertical power electronic devices has been confirmed by four-point probe measurements from which electrical resistivities as low as 0.26 Ω cm have been obtained.

  1. Evaluation of freestanding boron-doped diamond grown by chemical vapour deposition as substrates for vertical power electronic devices

    Science.gov (United States)

    Issaoui, R.; Achard, J.; Tallaire, A.; Silva, F.; Gicquel, A.; Bisaro, R.; Servet, B.; Garry, G.; Barjon, J.

    2012-03-01

    In this study, 4 × 4 mm2 freestanding boron-doped diamond single crystals with thickness up to 260 μm have been fabricated by plasma assisted chemical vapour deposition. The boron concentrations measured by secondary ion mass spectroscopy were 1018 to 1020 cm-3 which is in a good agreement with the values calculated from Fourier transform infrared spectroscopy analysis, thus indicating that almost all incorporated boron is electrically active. The dependence of lattice parameters and crystal mosaicity on boron concentrations have also been extracted from high resolution x-ray diffraction experiments on (004) planes. The widths of x-ray rocking curves have globally shown the high quality of the material despite a substantial broadening of the peak, indicating a decrease of structural quality with increasing boron doping levels. Finally, the suitability of these crystals for the development of vertical power electronic devices has been confirmed by four-point probe measurements from which electrical resistivities as low as 0.26 Ω cm have been obtained.

  2. Synthesis of Tin Nitride Sn x N y Nanowires by Chemical Vapour Deposition

    Science.gov (United States)

    Zervos, Matthew; Othonos, Andreas

    2009-09-01

    Tin nitride (Sn x N y ) nanowires have been grown for the first time by chemical vapour deposition on n-type Si(111) and in particular by nitridation of Sn containing NH4Cl at 450 °C under a steady flow of NH3. The Sn x N y nanowires have an average diameter of 200 nm and lengths ≥5 μm and were grown on Si(111) coated with a few nm’s of Au. Nitridation of Sn alone, under a flow of NH3 is not effective and leads to the deposition of Sn droplets on the Au/Si(111) surface which impedes one-dimensional growth over a wide temperature range i.e. 300-800 °C. This was overcome by the addition of ammonium chloride (NH4Cl) which undergoes sublimation at 338 °C thereby releasing NH3 and HCl which act as dispersants thereby enhancing the vapour pressure of Sn and the one-dimensional growth of Sn x N y nanowires. In addition to the action of dispersion, Sn reacts with HCl giving SnCl2 which in turn reacts with NH3 leading to the formation of Sn x N y NWs. A first estimate of the band-gap of the Sn x N y nanowires grown on Si(111) was obtained from optical reflection measurements and found to be ≈2.6 eV. Finally, intricate assemblies of nanowires were also obtained at lower growth temperatures.

  3. Methyldichloroborane evidenced as an intermediate in the chemical vapour deposition synthesis of boron carbide.

    Science.gov (United States)

    Reinisch, G; Patel, S; Chollon, G; Leyssale, J-M; Alotta, D; Bertrand, N; Vignoles, G L

    2011-09-01

    The most recent ceramic-matrix composites (CMC) considered for long-life applications as thermostructural parts in aerospace propulsion contain, among others, boron-rich phases like boron carbide. This compound is prepared by thermal Chemical Vapour Infiltration (CVI), starting from precursors like boron halides and hydrocarbons. We present a study aiming at a precise knowledge of the gas-phase composition in a hot-zone LPCVD reactor fed with BCl3, CH4 and H2, which combines experimental and theoretical approaches. This work has brought strong evidences of the presence of Methydichloroborane (MDB, BCl2CH3) in the process. It is demonstrated that this intermediate, the presence of which had never been formally proved before, appears for processing temperatures slightly lower than the deposition temperature of boron carbide. The study features quantum chemical computations, which provide several pieces of information like thermochemical and kinetic data, as well as vibration and rotation frequencies, reaction kinetics computations, and experimental gas-phase characterization of several species by FTIR, for several processing parameter sets. The main results are presented, and the place of MDB in the reaction scheme is discussed. PMID:22097577

  4. Synthesis of few layer single crystal graphene grains on platinum by chemical vapour deposition

    Institute of Scientific and Technical Information of China (English)

    S. Karamat; S. Sonuşen; Ü. Çelik; Y. Uysallı; E. Özgönül; A. Oral

    2015-01-01

    The present competition of graphene electronics demands an efficient route which produces high quality and large area graphene. Chemical vapour deposition technique, where hydrocarbons dissociate in to active carbon species and form graphene layer on the desired metal catalyst via nucleation is considered as the most suitable method. In this study, single layer graphene with the presence of few layer single crystal graphene grains were grown on Pt foil via chemical vapour deposition. The higher growth temperature changes the surface morphology of the Pt foil so a delicate process of hydrogen bubbling was used to peel off graphene from Pt foil samples with the mechanical support of photoresist and further transferred to SiO2/Si substrates for analysis. Optical microscopy of the graphene transferred samples showed the regions of single layer along with different oriented graphene domains. Two type of interlayer stacking sequences, Bernal and twisted, were observed in the graphene grains. The presence of different stacking sequences in the graphene layers influence the electronic and optical properties;in Bernal stacking the band gap can be tunable and in twisted stacking the overall sheet resistance can be reduced. Grain boundaries of Pt provides low energy sites to the carbon species, therefore the nucleation of grains are more at the boundaries. The stacking order and the number of layers in grains were seen more clearly with scanning electron microscopy. Raman spectroscopy showed high quality graphene samples due to very small D peak. 2D Raman peak for single layer graphene showed full width half maximum (FWHM) value of 30 cm ? 1. At points A, B and C, Bernal stacked grain showed FWHM values of 51.22, 58.45 and 64.72 cm ? 1, while twisted stacked grain showed the FWHM values of 27.26, 28.83 and 20.99 cm ? 1, respectively. FWHM values of 2D peak of Bernal stacked grain showed an increase of 20–30 cm ? 1 as compare to single layer graphene which showed its

  5. Synthesis of few layer single crystal graphene grains on platinum by chemical vapour deposition

    Directory of Open Access Journals (Sweden)

    S. Karamat

    2015-08-01

    Full Text Available The present competition of graphene electronics demands an efficient route which produces high quality and large area graphene. Chemical vapour deposition technique, where hydrocarbons dissociate in to active carbon species and form graphene layer on the desired metal catalyst via nucleation is considered as the most suitable method. In this study, single layer graphene with the presence of few layer single crystal graphene grains were grown on Pt foil via chemical vapour deposition. The higher growth temperature changes the surface morphology of the Pt foil so a delicate process of hydrogen bubbling was used to peel off graphene from Pt foil samples with the mechanical support of photoresist and further transferred to SiO2/Si substrates for analysis. Optical microscopy of the graphene transferred samples showed the regions of single layer along with different oriented graphene domains. Two type of interlayer stacking sequences, Bernal and twisted, were observed in the graphene grains. The presence of different stacking sequences in the graphene layers influence the electronic and optical properties; in Bernal stacking the band gap can be tunable and in twisted stacking the overall sheet resistance can be reduced. Grain boundaries of Pt provides low energy sites to the carbon species, therefore the nucleation of grains are more at the boundaries. The stacking order and the number of layers in grains were seen more clearly with scanning electron microscopy. Raman spectroscopy showed high quality graphene samples due to very small D peak. 2D Raman peak for single layer graphene showed full width half maximum (FWHM value of 30 cm−1. At points A, B and C, Bernal stacked grain showed FWHM values of 51.22, 58.45 and 64.72 cm−1, while twisted stacked grain showed the FWHM values of 27.26, 28.83 and 20.99 cm−1, respectively. FWHM values of 2D peak of Bernal stacked grain showed an increase of 20–30 cm−1 as compare to single layer graphene

  6. Kinetically controlled InN nucleation on GaN templates by metalorganic chemical vapour deposition

    International Nuclear Information System (INIS)

    This paper presents a study on the nucleation and initial growth kinetics of InN on GaN, especially their dependence on metalorganic chemical vapour deposition conditions. It is found that the density and size of separated InN nano-scale islands can be adjusted and well controlled by changing the V/III ratio and growth temperature. InN nuclei density increases for several orders of magnitude with decreasing growth temperature between 525 and 375 0C. At lower growth temperatures, InN thin films take the form of small and closely packed islands with diameters less than 100 nm, whereas at elevated temperatures the InN islands grow larger and become well separated, approaching an equilibrium hexagonal shape due to enhanced surface diffusion of adatoms. The temperature dependence of InN island density gives two activation energies of InN nucleation behaviour, which is attributed to two different kinetic processes related to In adatom surface diffusion and desorption, respectively.

  7. Chemical Vapour Deposition Graphene Radio-Frequency Field-Effect Transistors

    International Nuclear Information System (INIS)

    We report the dc and rf performance of graphene rf field-effect transistors, where the graphene films are grown on copper by using the chemical vapour deposition (CVD) method and transferred to SiO2/Si substrates. Composite materials, benzocyclobutene and atomic layer deposition Al2O3 are used as the gate dielectrics. The observation of n- and p-type transitions verifies the ambipolar characteristics in the graphene layers. While the intrinsic carrier mobility of CVD graphene is extracted to be 1200 cm2/V·s, the parasitic series resistances are demonstrated to have a serious impact on device performance. With a gate length of 1 μm and an extrinsic transconductance of 72 mS/mm, a cutoff frequency of 6.6 GHz and a maximum oscillation frequency of 8.8 GHz are measured for the transistors, illustrating the potential of the CVD graphene for rf applications. (condensed matter: electronic structure, electrical, magnetic, and optical properties)

  8. Chemical Vapour Deposition of Graphene with Re-useable Pt and Cu substrates for Flexible Electronics

    Science.gov (United States)

    Karamat, Shumaila; Sonusen, Selda; Celik, Umit; Uysalli, Yigit; Oral, Ahmet

    2015-03-01

    Graphene has gained the attention of scientific world due to its outstanding physical properties. The future demand of flexible electronics such as solar cells, light emitting diodes, photo-detectors and touch screen technology requires more exploration of graphene properties on flexible substrates. The most interesting application of graphene is in organic light emitting diodes (OLED) where efforts are in progress to replace brittle indium tin oxide (ITO) electrode with a flexible graphene electrode because ITO raw materials are becoming increasingly expensive, and its brittle nature makes it unsuitable for flexible devices. In this work, we grow graphene on Pt and Cu substrates using chemical vapour deposition (CVD) and transferred it to a polymer material (PVA) using lamination technique. We used hydrogen bubbling method for separating graphene from Pt and Cu catalyst to reuse the substrates many times. After successful transfer of graphene on polymer samples, we checked the resistivity values of the graphene sheet which varies with growth conditions. Furthermore, Raman, atomic force microscopy (AFM), I-V and Force-displacement measurements will be presented for these samples.

  9. Synthesis of thick diamond films by direct current hot-cathode plasma chemical vapour deposition

    CERN Document Server

    Jin Zeng Sun; Bai Yi Zhen; Lu Xian Yi

    2002-01-01

    The method of direct current hot-cathode plasma chemical vapour deposition has been established. A long-time stable glow discharge at large discharge current and high gas pressure has been achieved by using a hot cathode in the temperature range from 1100 degree C to 1500 degree C and non-symmetrical configuration of the poles, in which the diameter of the cathode is larger than that of anode. High-quality thick diamond films, with a diameter of 40-50 mm and thickness of 0.5-4.2 mm, have been synthesized by this method. Transparent thick diamond films were grown over a range of growth rates between 5-10 mu m/h. Most of the thick diamond films have thermal conductivities of 10-12 W/K centre dot cm. The thick diamond films with high thermal conductivity can be used as a heat sink of semiconducting laser diode array and as a heat spreading and isolation substrate of multichip modules. The performance can be obviously improved

  10. Structural properties of zinc oxide deposited using atmospheric pressure combustion chemical vapour deposition

    International Nuclear Information System (INIS)

    In this study the deposition of thin zinc oxide (ZnO) films under atmospheric pressure conditions was investigated. The deposition technique applied was combustion chemical vapour deposition (CCVD), at which a propane–air mixture was combusted in a burner. Dissolved zinc nitrate was used as precursor, which was guided as aerosol droplets by the processing gas flow directly into the reaction zone. Fundamental investigations were performed to form undoped ZnO. The structural properties of the films were analysed in dependence of the substrate temperature during the coating process. The presence of crystalline ZnO structures was proved and differences in film growth and crystallite sizes are revealed. Additionally, the particles generated by the CCVD-flame are characterised. The thin films showed a slight excess of Zn and several states of binding energy could be observed by fitting the core level spectra. Scanning and transmission electron microscopy also indicated ordered structures and additionally different orientations of crystallites were observed. - Highlights: • Columnar growth structures of ZnO by CCVD were observed. • The presence of polycrystalline ZnO with (002) as main orientation was confirmed. • Initial particles significantly differ from crystallite sizes of the resulting films. • The films show an excess of Zn with a Zn-to-O ratio of around 1.7

  11. In-line silicon epitaxy for photovoltaics using a continous chemical vapour deposition reactor.

    Science.gov (United States)

    Keller, Martin; Reber, Stefan; Schillinger, Norbert; Pocza, David; Arnold, Martin

    2011-09-01

    Thin film solar cell techniques can effectively reduce the costs for photovoltaic solar power. However, most of these techniques still have the disadvantage of a comparatively low efficiency. One way to realize a thin film solar cell concept with high efficiency potential is the crystalline silicon thin-film (cSiTF) concept. Following the high-temperature approach, this concept is based on a silicon epitaxy process. This paper reports the current status of the development of a high throughput epitaxy tool at Fraunhofer ISE and presents first results. Also presented is the development of a simulation tool which is a virtual image of the real setup in order to forecast save deposition conditions. The presented epitaxy tool is the ConCVD (Continuous Chemical Vapour Deposition), in which an improved reactor setup has been installed, based on the experience gained so far. To provide insight into upcoming further advances, the industrial scale epitaxy tool ProConCVD is presented as well. PMID:22097523

  12. Nano sized bismuth oxy chloride by metal organic chemical vapour deposition

    Energy Technology Data Exchange (ETDEWEB)

    Jagdale, Pravin, E-mail: pravin.jagdale@polito.it [Department of Applied Science and Technology (DISAT), Politecnico di Torino, 10129 (Italy); Castellino, Micaela [Center for Space Human Robotics, Istituto Italiano di Tecnologia, Corso Trento 21, 10129 Torino (Italy); Marrec, Françoise [Laboratory of Condensed Matter Physics, University of Picardie Jules Verne (UPJV), Amiens 80039 (France); Rodil, Sandra E. [Instituto de Investigaciones en Materiales, Universidad Nacional Autonoma de Mexicom (UNAM), Mexico D.F. 04510 (Mexico); Tagliaferro, Alberto [Department of Applied Science and Technology (DISAT), Politecnico di Torino, 10129 (Italy)

    2014-06-01

    Metal organic chemical vapour deposition (MOCVD) method was used to prepare thin films of bismuth based nano particles starting from bismuth salts. Nano sized bismuth oxy chloride (BiOCl) crystals were synthesized from solution containing bismuth chloride (BiCl{sub 3}) in acetone (CH{sub 3}-CO-CH{sub 3}). Self-assembly of nano sized BiOCl crystals were observed on the surface of silicon, fused silica, copper, carbon nanotubes and aluminium substrates. Various synthesis parameters and their significant impact onto the formation of self-assembled nano-crystalline BiOCl were investigated. BiOCl nano particles were characterized by X-ray diffraction, X-ray photoelectron spectroscopy, field emission scanning electron microscopy, energy-dispersive X-ray spectroscopy and Micro-Raman spectroscopy. These analyses confirm that bismuth nanometer-sized crystal structures showing a single tetragonal phase were indeed bismuth oxy chloride (BiOCl) square platelets 18–250 nm thick and a few micrometres wide.

  13. Controlled n-doping in chemical vapour deposition grown graphene by antimony

    International Nuclear Information System (INIS)

    We have studied the effects of antimony (Sb) doping on graphene grown by chemical vapour deposition without any significant change in its electrical properties. By increasing the metal thickness from 1 to 5 nm, we found a shift in the wave numbers of Raman G and two-dimensional (2D) peaks consistent with n-doping and a change in the Fermi level of the graphene into the conduction band. The relative intensity of the D peak to the G peak did not show a significant change and that of the 2D peak to the G peak remained at a large enough number as a function of metal thickness, implying little degradation by the metal dopants. Transport measurements also confirm the n-doping of graphene through a shift of Dirac point in the transfer characteristics and the quality preservation with little changes in mobility. We also report on the formation of a p–n junction by metal doping on selected areas of the graphene and their electrical properties with transfer characteristics and Hall measurements. (paper)

  14. Control and characterization of individual grains and grain boundaries in graphene grown by chemical vapour deposition

    Science.gov (United States)

    Yu, Qingkai; Jauregui, Luis A.; Wu, Wei; Colby, Robert; Tian, Jifa; Su, Zhihua; Cao, Helin; Liu, Zhihong; Pandey, Deepak; Wei, Dongguang; Chung, Ting Fung; Peng, Peng; Guisinger, Nathan P.; Stach, Eric A.; Bao, Jiming; Pei, Shin-Shem; Chen, Yong P.

    2011-06-01

    The strong interest in graphene has motivated the scalable production of high-quality graphene and graphene devices. As the large-scale graphene films synthesized so far are typically polycrystalline, it is important to characterize and control grain boundaries, generally believed to degrade graphene quality. Here we study single-crystal graphene grains synthesized by ambient chemical vapour deposition on polycrystalline Cu, and show how individual boundaries between coalescing grains affect graphene’s electronic properties. The graphene grains show no definite epitaxial relationship with the Cu substrate, and can cross Cu grain boundaries. The edges of these grains are found to be predominantly parallel to zigzag directions. We show that grain boundaries give a significant Raman ‘D’ peak, impede electrical transport, and induce prominent weak localization indicative of intervalley scattering in graphene. Finally, we demonstrate an approach using pre-patterned growth seeds to control graphene nucleation, opening a route towards scalable fabrication of single-crystal graphene devices without grain boundaries.

  15. Chemical vapour deposition of praseodymium oxide films on silicon: influence of temperature and oxygen pressure

    International Nuclear Information System (INIS)

    Metal-organic chemical vapour deposition (MOCVD) of various phases in PrOx system has been studied in relation with deposition temperature (450-750 deg. C) and oxygen partial pressure (0.027-100 Pa or 0.2-750 mTorr). Depositions were carried out by pulsed liquid injection MOCVD using Pr(thd)3 (thd = 2,2,6,6-tetramethyl-3,5-heptanedionate) precursor dissolved in toluene or monoglyme. By varying deposition temperature and oxygen partial pressure amorphous films or various crystalline PrOx phases (Pr2O3, Pr7O12, Pr6O11) and their mixtures can be grown. The pure crystalline Pr2O3 phase grows only in a narrow range of partial oxygen pressure and temperature, while high oxygen pressure (40-100 Pa) always leads to the most stable Pr6O11 phase. The influence of annealing under vacuum at 750 deg. C on film phase composition was also studied. Near 90% step coverage conformity was achieved for PrOx films on structured silicon substrates with aspect ratio 1:10. In air degradation of Pr2O3 films with transformation to Pr(OH)3 was observed in contrast to Pr6O11 films

  16. Investigation of the nucleation process of chemical vapour deposited diamond films

    International Nuclear Information System (INIS)

    The primary aim of this work was to contribute to the understanding of the bias enhanced nucleation (BEN) process during the chemical vapour deposition (CVD) of diamond on silicon. The investigation of both the gas phase environment above the substrate surface, by in situ mass selective energy analysis of ions, and of the surface composition and structure by in vacuo surface analytic methods (XPS, EELS) have been carried out. In both cases, the implementation of these measurements required the development and construction of special experimental apparatus as well. The secondary aim of this work was to give orientation to our long term goal of growing diamond films with improved quality. For this reason, (1) contaminant levels at the diamond-silicon interface after growth were studied by SIMS, (2) the internal stress distribution of highly oriented free-standing diamond films were studied by Raman spectroscopy, and (3) an attempt was made to produce spatially regular oriented nuclei formation by nucleating on a pattern created by laser treatment on silicon substrates. (orig.)

  17. Development and characterization of Undoped Silicon Glass (USG using chemical vapour deposition

    Directory of Open Access Journals (Sweden)

    Jagadeesha T

    2011-02-01

    Full Text Available Sub atmospheric chemical vapour deposition (SACVD is a widely used technique in semiconductor integrated circuit (IC manufacturing, especially to form inter-metal silicon (IMD dioxide thin films. It was designed for commercially available tools in order to satisfy the gap filling requirements necessary for 0.18 and 0.15 lm technology ICs, but it has been successfully extended also for 0.13 lm technological node and over. SACVD technique has a potential impact on device electrical characteristics and metallurgy compatibility, according to process conditions, such as mass flow rate of TEOS, Gasflows, RF power. Present work focuses on development and characterisation of undoped silicate glass that can be used for Flash memory and Logic devices. It is shown that new process yield deposition rate improvement of 51% and throughput improvement of 13%.. Qualitative yield comparison and wafer map to map comparison work is also presented for various technology nodes. Device parameters comparison with the standard process is also included in the present work.

  18. Characterization of chemical vapour deposited diamond films: correlation between hydrogen incorporation and film morphology and quality

    International Nuclear Information System (INIS)

    In order to tailor diamond synthesized through chemical vapour deposition (CVD) for different applications, many diamond films of different colours and variable quality were deposited by a 5 kW microwave plasma CVD reactor under different growth conditions. The morphology, quality and hydrogen incorporation of these films were characterized using scanning electron microscopy (SEM), Raman and Fourier-transform infrared (FTIR) spectroscopy, respectively. From this study, a general trend between hydrogen incorporation and film colour, morphology and quality was found. That is, as the films sorted by colour gradually become darker, ranging from white through grey to black, high magnification SEM images illustrate that the smoothness of the well defined crystalline facet gradually decreases and second nucleation starts to appear on it, indicating gradual degradation of the crystalline quality. Correspondingly, Raman spectra evidence that the diamond Raman peak at 1332 cm-1 becomes broader and the non-diamond carbon band around 1500 cm-1 starts to appear and becomes stronger, confirming increase of the non-diamond component and decrease of the phase purity of the film, while FTIR spectra show that the CH stretching band and the two CVD diamond specific peaks around 2830 cm-1 rise rapidly, and this indicates that the total amount of hydrogen incorporated into the film increases significantly

  19. Characterisation of TiO 2 deposited by photo-induced chemical vapour deposition

    Science.gov (United States)

    Kaliwoh, Never; Zhang, Jun-Ying; Boyd, Ian W.

    2002-01-01

    We report the deposition of thin TiO 2 films on crystalline Si and quartz by photo-induced chemical vapour deposition (CVD) using UV excimer lamps employing a dielectric barrier discharge in krypton chloride (KrCl ∗) to provide intense narrow band radiation at λ=222 nm. The precursor used was titanium isopropoxide (TTIP). Films from around 20-510 nm in thickness with refractive indices from 2.20 to 2.54 were grown at temperatures between 50 and 350 °C. The higher refractive index values compare favourably with the value of 2.58 recorded for the bulk material. The measured deposition rate was around 50 nm/min at 350 °C. Fourier transform infrared spectroscopy (FTIR) revealed the presence of TiO 2 through the observation of a Ti-O absorption peak and the absence of OH in films deposited at 250-350 °C indicated relatively good quality films. The phase of films deposited at 200-350 °C was anatase as determined by X-ray diffraction.

  20. Characterisation of silicon carbide films deposited by plasma-enhanced chemical vapour deposition

    International Nuclear Information System (INIS)

    The paper presents a characterisation of amorphous silicon carbide films deposited in plasma-enhanced chemical vapour deposition (PECVD) reactors for MEMS applications. The main parameter was optimised in order to achieve a low stress and high deposition rate. We noticed that the high frequency mode (13.56 MHz) gives a low stress value which can be tuned from tensile to compressive by selecting the correct power. The low frequency mode (380 kHz) generates high compressive stress (around 500 MPa) due to ion bombardment and, as a result, densification of the layer achieved. Temperature can decrease the compressive value of the stress (due to annealing effect). A low etching rate of the amorphous silicon carbide layer was noticed for wet etching in KOH 30% at 80 oC (around 13 A/min) while in HF 49% the layer is practically inert. A very slow etching rate of amorphous silicon carbide layer in XeF2 -7 A/min- was observed. The paper presents an example of this application: PECVD-amorphous silicon carbide cantilevers fabricated using surface micromachining by dry-released technique in XeF2

  1. Atmospheric pressure chemical vapour deposition of thermochromic tungsten doped vanadium dioxide thin films for use in architectural glazing

    OpenAIRE

    Blackman, C. S.; Piccirillo, C.; Binions, R.; Parkin, I. P.

    2009-01-01

    Atmospheric pressure chemical vapour deposition of VCl4, WCl6 and water at 550 degrees C lead to the production of high quality tungsten doped vanadium dioxide thin films. Careful control of the gas phase precursors allowed for tungsten doping up to 8 at.%. The transition temperature of the thermochromic switch was tunable in the range 55 degrees C to - 23 degrees C. The films were analysed using X-ray diffraction, scanning electron microscopy, Raman spectroscopy and X-ray photoelectron spect...

  2. Antimicrobial activity of novel nanostructured Cu-SiO2 coatings prepared by chemical vapour deposition against hospital related pathogens

    OpenAIRE

    Varghese, Sajnu; ElFakhri, Souad O; Sheel, David W.; Sheel, Paul; Bolton, Frederick J Eric; Foster, Howard A

    2013-01-01

    There is increasing recognition that the healthcare environment acts as an important reservoir for transmission of healthcare acquired infections (HCAI). One method of reducing environmental contamination would be use of antimicrobial materials. The antimicrobial activity of thin silica-copper films prepared by chemical vapour deposition was evaluated against standard strains of bacteria used for disinfectant testing and bacteria of current interest in HCAI. The structure of the coatings was ...

  3. Growth mechanisms of carbon nanotrees with branched carbon nanofibers synthesized by plasma-enhanced chemical vapour deposition

    OpenAIRE

    He, Zhanbing; Maurice, Jean-Luc; Lee, Chang Seok; Cojocaru, Costel Sorin; Pribat, D.

    2014-01-01

    Y- and comb-type carbon nanotrees formed from branched carbon nanofibres grown by plasma-enhanced chemical vapour deposition were studied by transmission electron microscopy. Different growth mechanisms are proposed for the two types of nanotrees based on the observed and reconstituted dynamic transformations of the catalyst particles during synthesis. However, the splitting of the larger catalyst particles is required for both kinds of nanotrees, whatever the involved growth mechanism. The c...

  4. Microwave-assisted Chemical Transformations

    Science.gov (United States)

    In recent years, there has been a considerable interest in developing sustainable chemistries utilizing green chemistry principles. Since the first published report in 1986 by Gedye and Giguere on microwave assisted synthesis in household microwave ovens, the use of microwaves as...

  5. The study and the realization of radiation detectors made from polycrystalline diamond films grown by microwave plasma enhanced chemical vapour deposition technique; Etude et realisation de detecteurs de rayonnements a base de films de diamant polycristallin elabores par depot chimique en phase vapeur assiste par plasma micro-onde

    Energy Technology Data Exchange (ETDEWEB)

    Jany, Ch

    1998-10-29

    The aim of this work was to develop radiation detectors made from polycrystalline diamond films grown by microwave plasma enhanced chemical vapour deposition technique. The influence of surface treatments, contact technology and diamond growth parameters on the diamond detectors characteristics was investigated in order to optimise the detector response to alpha particles. The first part of the study focused on the electrical behaviour of as-deposited diamond surface, showing a p type conduction and its influence on the leakage current of the device. A surface preparation process was established in order to reduce the leakage current of the device by surface dehydrogenation using an oxidising step. Several methods to form and treat electrical contacts were also investigated showing that the collection efficiency of the device decreases after contact annealing. In the second part, we reported the influence of the diamond deposition parameters on the characteristics of the detectors. The increase of the deposition temperature and/or methane concentration was shown to lead {eta} to decrease. In contrast, {eta} was found to increase with the micro-wave power. The evolution of the diamond detector characteristics results from the variation in sp{sup 2} phases incorporation and in the crystallography quality of the films. These defects increase the leakage current and reduce the carrier mobility and lifetime. Measurements carried out on detectors with different thicknesses showed that the physical properties varies along the growth direction, improving with the film thickness. Finally, the addition of nitrogen (> 10 ppm) in the gas mixture during diamond deposition was found to strongly reduce the collection efficiency of the detectors. To conclude the study, we fabricated and characterised diamond devices which were used for thermal neutron detection and for the intensity and shape measurement of VUV and soft X-ray pulses. (author)

  6. Low-pressure Chemical Vapour Deposition of Silicon Nanoparticles:Synthesis and Characterisation

    Directory of Open Access Journals (Sweden)

    A. Kumar

    2008-07-01

    Full Text Available emiconductor nanostructures such as quantum wells, quantum wires or quantum dots exhibit superior properties in comparison to their bulk forms. Quantum dots are described aszero-dimensional electron gas system, as carriers are confined in all the three directions. Densityof states is discrete function of energy. Allowed energy spectrum is discrete like in an atom.Energy band gap is broadened due to carriers confinement. Semiconductor quantum dots exhibittypical coulomb blockade characteristic which is exploited for development of new generationof nanoelectronic devices namely single-electron transistor, memories, etc, whose operationdepends on quantum mechanical tunneling of carriers through energy barriers. Thesesemiconductor nanostructures emit light in visible range upon excitation by optical means. Inrecent years,  research  has been focused on different nano-scale materials; metals (Au, Ag, Fe,Mn, Ni, metal oxides (SnO2, ZnO2, compound semiconductors (GaAs, GaAlAs, CdSe, CdS,GaN, and elemental semiconductors (silicon and germanium. As silicon is the most favouredmaterial in the established integrated circuits manufacturing technology, research is being donefor controlled synthesis and characterisation of Si nanoparticles. The Si nanoparticles havebeen synthesised on oxide and nitride layers over  Si substrate by IC technology compatiblelow-pressure chemical vapour deposition technique. Atomic force microscopy (AFMcharacterisation has been extensively carried out on the samples. It is shown that the tip radiusand shape of tip lead to less accurate estimate of the actual size. The AFM images have been evaluated based on the real surface topography and shape of the tip. Photolumine scence (PL studies have been performed to characterise the samples. The PL measurements showed visiblelight emission from synthesised silicon nanoparticles.Defence Science Journal, 2008, 58(4, pp.550-558, DOI:http://dx.doi.org/10.14429/dsj.58.1676

  7. Conductive zinc oxide thin film coatings by combustion chemical vapour deposition at atmospheric pressure

    International Nuclear Information System (INIS)

    We have established a combustion chemical vapour deposition (C-CVD) system for the deposition of zinc oxide (ZnO) at atmospheric pressure. This C-CVD process has the advantage of a short exposure of the substrates to the flame. It is also potentially applicable as an inline coating system. Fundamental studies were performed on undoped ZnO. The specific resistivity of these layers strongly depends on the film thickness and decreases with increasing thickness. As the lowest resistivities, values of about 2.0 · 10−1 Ωcm are achieved. Ultra-violet photoemission spectra show the valence band structure of the deposited ZnO. The work function and valence band edge were determined. UV–vis spectra were taken to investigate the transmission of the coated glass samples. From these spectra the band gap energy was obtained. Raman spectroscopy as well as infrared spectroscopy confirmed the presence of ordered ZnO crystallites. The X-ray diffraction verified this result and illustrates the hexagonal structure. In the mid-infrared range precursor deposits were detected for low substrate temperatures. - Highlights: ► Zinc oxide (ZnO) films are conductive in the range of 2.0 · 10−1 Ωcm. ► X-ray diffraction, Raman and infrared spectroscopy indicate crystalline ZnO films. ► Precursor deposits were proved within the films for low growing temperatures. ► Band gap energy changes are achieved due to different growing temperatures

  8. The Role of Plasma in Plasma Enhanced Chemical Vapour Deposition of Nanostructure Growth

    Science.gov (United States)

    Hash, David B.; Meyyappan, M.; Teo, Kenneth B. K.; Lacerda, Rodrigo G.; Rupesinghe, Nalin L.

    2004-01-01

    Chemical vapour deposition (CVD) has become the preferred process for high yield growth of carbon nanotubes and nanofibres because of its ability to pattern growth through lithographic positioning of transition metal catalysts on substrates. Many potential applications of nanotubes such as field emitters [1] require not only patterned growth but also vertical alignment. Some degree of ali,ment in thermal CVD processes can be obtained when carbon nanotubes are grown closely together as a result of van der Waals interactions. The ali,onment however is marginal, and the van der Waals prerequisite makes growth of freestanding nanofibres with thermal CVD unrealizable. The application of electric fields as a means of ali,onment has been shown to overcome this limitation [2-5], and highly aligned nanostructures can be grown if electric fields on the order of 0.5 V/microns are employed. Plasma enhanced CVD in various configurations including dc, rf, microwave, inductive and electron cyclotron resonance has been pursued as a means of enabling alignment in the CVD process. However, the sheath fields for the non-dc sources are in general not sufficient for a high degree of ali,pment and an additional dc bias is usually applied to the growth substrate. This begs the question as to the actual role of the plasma. It is clear that the plasma itself is not required for aligned growth as references [3] and [4] employed fields through small applied voltages (3-20 V) across very small electrode spacings (10-100 microns) and thus avoided striking a discharge.

  9. Temporal Stability of Metal-Chloride-Doped Chemical-Vapour-Deposited Graphene.

    Science.gov (United States)

    Kang, Moon H; Milne, William I; Cole, Matthew T

    2016-08-18

    Graphene has proven to be a promising material for transparent flexible electronics. In this study, we report the development of a transfer and doping scheme of large-area chemical vapour deposited (CVD) graphene. A technique to transfer the as-grown material onto mechanically flexible and optically transparent polymeric substrates using an ultraviolet adhesive (UVA) is outlined, along with the temporal stability of the sheet resistance and optical transparency following chemical doping with various metal chlorides (Mx Cly The sheet resistance (RS ) and 550 nm optical transparency (%T550 ) of the transferred un-doped graphene was 3.5 kΩ sq(-1) (±0.2 kΩ sq(-1) ) and 84.1 % (±2.9 %), respectively. Doping with AuCl3 showed a notable reduction in RS by some 71.4 % (to 0.93 kΩ sq(-1) ) with a corresponding %T550 of 77.0 %. After 200 h exposure to air at standard temperature and pressure, the increase in RS was found to be negligible (ΔRS AuCl3 =0.06 kΩ sq(-1) ), indicating that, of the considered Mx Cly species, AuCl3 doping offered the highest degree of time stability under ambient conditions. There appears a tendency of increasing RS with time for the remaining metal chlorides studied. We attribute the observed temporal shift to desorption of molecular dopants. We find that desorption was most significant in RhCl3 -doped samples whereas, in contrast, after 200 h in ambient conditions, AuCl3 -doped graphene showed only marginal desorption. The results of this study demonstrate that chemical doping of UVA-transferred graphene is a promising means for enhancing large-area CVD graphene in order to realise a viable platform for next-generation optically transparent and mechanically flexible electronics. PMID:27165783

  10. Laser diagnostics of a diamond depositing chemical vapour deposition gas-phase environment

    International Nuclear Information System (INIS)

    Studies have been carried out to understand the gas-phase chemistry underpinning diamond deposition in hot filament and DC-arcjet chemical vapour deposition (CVD) systems. Resonance enhanced Multiphoton lonisation (REMPI) techniques were used to measure the relative H atom and CH3 radical number densities and local gas temperatures prevalent in a hot filament reactor, operating on Ch4/H2 and C2H2/H2 gas mixtures. These results were compared to a 3D-computer simulation, and hence provided an insight into the nature of the gas-phase chemistry with particular reference to C2→C1 species conversion. Similar experimental and theoretical studies were also carried out to explain the chemistry involved in NH3/CH4/H2 and N2/CH4/H2 gas mixtures. It was demonstrated that the reactive nature of the filament surface was dependent on the addition of NH3, influencing atomic hydrogen production, and thus the H/C/N gas-phase chemistry. Studies of the DC-arcjet diamond CVD reactor consisted of optical emission spectroscopic studies of the plume during deposition from an Ar/H2/CH4/N2 gas mixture. Spatially resolved species emission intensity maps were obtained for C2(d→a), CN(B→X) and Hβ from Abel-inverted datasets. The C2(d→a) and CN(B→X) emission intensity maps both show local maxima near the substrate surface. SEM and Laser Raman analyses indicate that N2 additions lead to a reduction in film quality and growth rate. Photoluminescence and SIMS analyses of the grown films provide conclusive evidence of nitrogen incorporation (as chemically bonded CN). Absolute column densities of C2(a) in a DC-arcjet reactor operating on an Ar/H2/CH4 gas mixture, were measured using Cavity ring down spectroscopy. Simulations of the measured C2(v=0) transition revealed a rotational temperature of ∼3300 K. This gas temperature is similar to that deduced from optical emission spectroscopy studies of the C2(d→a) transition. (author)

  11. Diagnostics of microwave activated novel gas mixtures for diamond chemical vapour deposition

    International Nuclear Information System (INIS)

    Microwave plasma enhanced Chemical Vapour Deposition (CVD) has been used to grow diamond films at substrate temperatures as low as 435 deg C using CO2/CH4 gas mixtures. Molecular beam mass spectrometry (MBMS) has been used to measure simultaneously the concentrations of the dominant gas phase species present during growth, for a wide range of plasma gas mixtures (0 - 80% CH4, balance CO2). The CHEMKIN computer package has also been used to simulate the experimental results in order to gain insight into the major reactions occurring within the microwave plasma. The calculated trends for all species agree well with the experimental observations. Using these data, the model for the gas phase chemistry can be reduced to just four overall reactions. Our findings suggest that CH3 radicals are likely to be the key growth species when using CO2/CH4 plasmas and provide a qualitative explanation for the observation that diamond growth occurs within a very narrow concentration window. Diamond films have also been deposited; using both 1% CH4/H2 and 51%CH4/49%CO2 gas mixtures with various levels of H2S addition (100-5000 ppm). The former gas mixture was investigated using both microwave (MW) and hot filament (HF) activation and it was found that these two deposition techniques yield very different results. For both 1% CH4/H2 and 51%CH4/49%CO2 MW activated gas mixtures, scanning electron microscopy (SEM) observations show that the crystal quality of these films reduces with increasing H2S addition. Laser Raman and four point probe measurements showed a corresponding fall in the quality and resistivity of deposited diamond films, respectively. MBMS measurements for these S containing gas mixtures revealed significant concentrations of CS2 and CS in all of the MW plasmas that yield S-doped diamond films, whereas CS was not detected in the gas phase during HF growth. This suggests that CS may be an important intermediary facilitating S incorporation into diamond. All of these

  12. Morphology of carbon nanotubes prepared via chemical vapour deposition technique using acetylene: A small angle neutron scattering investigation

    Indian Academy of Sciences (India)

    D Sen; K Dasgupta; J Bahadur; S Mazumder; D Sathiyamoorthy

    2008-11-01

    Small angle neutron scattering (SANS) has been utilized to study the morphology of the multi-walled carbon nanotubes prepared by chemical vapour deposition of acetylene. The effects of various synthesis parameters like temperature, catalyst concentration and catalyst support on the size distribution of the nanotubes are investigated. Distribution of nanotube radii in two length scales has been observed. The number density of the smaller diameter tubes was found more in number compared to the bigger one for all the cases studied. No prominent scaling of the structure factor was observed for the different synthesis conditions.

  13. Nitrogen-Doped Chemical Vapour Deposited Diamond: a New Material for Room-Temperature Solid State Maser

    Institute of Scientific and Technical Information of China (English)

    N. A. Poklonski; N. M. Lapchuk; A. V. Khomich; LU Fan-Xiu; TANG Wei-Zhong; V. G. Ralchenko; I. I. Vlasov; M. V. Chukichev; Sambuu Munkhtsetseg

    2007-01-01

    Electron spin resonance (ESR) in polycrystalline diamond films grown by dc arc-jet and microwave plasma chemical vapour deposition is studied. The films with nitrogen impurity concentration up to 8 × 1018 cm-3 are also characterized by Raman, cathodoluminescence and optical absorption spectra. The ESR signal from P1 centre with g-factor of 2.0024 (nitrogen impurity atom occupying C site in diamond lattice) is found to exhibit an inversion with increasing the microwave power in an H102 resonator. The spin inversion effect could be of interest for further consideration of N-doped diamonds as a medium for masers operated at room temperature.

  14. Inkjet printing of catalyst-Inks on Si wafers and the subsequent synthesis of carbon nanotubes by chemical vapour deposition

    International Nuclear Information System (INIS)

    The production of substrates coated with carbon nano tubes (CNTs) in well-defined patterns is desirable for sensor applications. In the present work, nickel based catalytic inks were prepared and printed on silicon substrates using ink jet delivery. Subsequently, the substrates were subjected to calcination and chemical vapour deposition for the growth of aligned CNTs. Scanning electron microscopy, transmission electron microscopy and Raman spectroscopy were used to characterize the CNTs. Various concentrations and formulations of ink preparations were studied to investigate the effect of these parameters on the growth and structure of the CNTs. (author)

  15. Review of analytical techniques to determine the chemical forms of vapours and aerosols released from overheated fuel

    International Nuclear Information System (INIS)

    A comprehensive review has been undertaken of appropriate analytical techniques to monitor and measure the chemical effects that occur in large-scale tests designed to study severe reactor accidents. Various methods have been developed to determine the chemical forms of the vapours, aerosols and deposits generated during and after such integral experiments. Other specific techniques have the long-term potential to provide some of the desired data in greater detail, although considerable efforts are still required to apply these techniques to the study of radioactive debris. Such in-situ and post-test methods of analysis have been also assessed in terms of their applicability to the analysis of samples from the Phebus-FP tests. The recommended in-situ methods of analysis are gamma-ray spectroscopy, potentiometry, mass spectrometry, and Raman/UV-visible absorption spectroscopy. Vapour/aerosol and deposition samples should also be obtained at well-defined time intervals during each experiment for subsequent post-test analysis. No single technique can provide all the necessary chemical data from these samples, and the most appropriate method of analysis involves a complementary combination of autoradiography, AES, IR, MRS, SEMS/EDS, SIMS/LMIS, XPS and XRD

  16. Inline atmospheric pressure metal-organic chemical vapour deposition for thin film CdTe solar cells

    International Nuclear Information System (INIS)

    A detailed study has been undertaken to assess the deposition of CdTe for thin film devices via an inline atmospheric pressure metal-organic chemical vapour deposition (AP-MOCVD) reactor. The precursors for CdTe synthesis were released from a showerhead assembly normal to a transparent conductive oxide (TCO)/glass substrate, previously coated with a CdZnS window layer using a conventional batch AP-MOCVD reactor with horizontal flow delivery. Under a simulated illumination with air mass coefficient 1.5 (AM1.5), the initial best cell conversion efficiency (11.2%) for such hybrid cells was comparable to a reference device efficiency (∼ 13%), grown entirely in the AP-MOCVD batch reactor. The performance and structure of the hybrid and conventional devices are compared for spectral response, CdTe grain morphology and crystal structure. These preliminary results reported on the transfer from a batch to an inline AP-MOCVD reactor which holds a good potential for the large-scale production of thin film photovoltaics devices and related materials. - Highlights: • Inline metal-organic chemical vapour deposition (MOCVD) used to grow CdTe films • Desired dopant profiles in CdTe:As achieved with inline MOCVD reactor • Initial conversion efficiency of 11.2% was comparable to batch devices (∼ 13%). • Inline MOCVD holds a good potential for large-scale thin film photovoltaics production

  17. Fabrication and characterization of kesterite Cu2ZnSnS4 thin films deposited by electrostatic spray assisted vapour deposition method

    OpenAIRE

    J.P. Liu; Choy, Kwang-Leong; Placidi, M.; J. López-García; Saucedo, Edgardo; Colombara, Diego; Robert, Erika

    2014-01-01

    Most of the high efficiency kesterite solar cells are fabricated by vacuum or hydrazine-based solution methods which have drawbacks, such as high cost, high toxicity or explosivity. In our contribution, an alternative non-vacuum and environmental friendly deposition technology called electrostatic spray assisted vapour deposition (ESAVD) has been used for the cost-effective growth of Cu2ZnSnS4 (CZTS) thin films with well controlled structure and composition. CZTS films have been characterized...

  18. Chemical vapour etching of silicon and porous silicon: silicon solar cells and micromachining applications

    Energy Technology Data Exchange (ETDEWEB)

    Ben Jaballah, A.; Hassen, M.; Hajji, M.; Saadoun, M.; Bessais, B.; Ezzaouia, H. [Institut National de Recherche Scientifique et Technique, Laboratoire de Photovoltaique et des Materiaux Semiconducteurs, PB 95 2050 Hammam lif (Tunisia)

    2005-06-01

    In this work, we used HNO{sub 3}/HF Vapour Etching (VE) of silicon (Si) wafers for the formation of different porous structures. Depending on the volume ratio of the HNO{sub 3}/HF acid mixture, we can obtain Porous Silicon (PS) layers or a (NH{sub 4}){sub 2}SiF{sub 6} like powder phase. These two kind of porous structures may be used in silicon solar cells and in micromachining applications. The VE technique allows producing thick porous layers (>100 {mu}m) in short times. Simple masking films enable to selectively groove Si wafers, leading to the formation of holes and channels of different sizes suitable for their application in micromachining. The various grooving profiles were investigated by Scanning electron microscopy (SEM). (copyright 2005 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  19. Liquid and vapour-phase antifungal activities of selected essential oils against candida albicans: microscopic observations and chemical characterization of cymbopogon citratus

    Directory of Open Access Journals (Sweden)

    Malik Anushree

    2010-11-01

    Full Text Available Abstract Background Use of essential oils for controlling Candida albicans growth has gained significance due to the resistance acquired by pathogens towards a number of widely-used drugs. The aim of this study was to test the antifungal activity of selected essential oils against Candida albicans in liquid and vapour phase and to determine the chemical composition and mechanism of action of most potent essential oil. Methods Minimum Inhibitory concentration (MIC of different essential oils in liquid phase, assayed through agar plate dilution, broth dilution & 96-well micro plate dilution method and vapour phase activity evaluated through disc volatilization method. Reduction of C. albicans cells with vapour exposure was estimated by kill time assay. Morphological alteration in treated/untreated C. albicans cells was observed by the Scanning electron microscopy (SEM/Atomic force microscopy (AFM and chemical analysis of the strongest antifungal agent/essential oil has been done by GC, GC-MS. Results Lemon grass (Cymbopogon citratus essential oil exhibited the strongest antifungal effect followed by mentha (Mentha piperita and eucalyptus (Eucalyptus globulus essential oil. The MIC of lemon grass essential oil in liquid phase (288 mg/l was significantly higher than that in the vapour phase (32.7 mg/l and a 4 h exposure was sufficient to cause 100% loss in viability of C. albicans cells. SEM/AFM of C. albicans cells treated with lemon grass essential oil at MIC level in liquid and vapour phase showed prominent shrinkage and partial degradation, respectively, confirming higher efficacy of vapour phase. GC-MS analysis revealed that lemon grass essential oil was dominated by oxygenated monoterpenes (78.2%; α-citral or geranial (36.2% and β-citral or neral (26.5%, monoterpene hydrocarbons (7.9% and sesquiterpene hydrocarbons (3.8%. Conclusion Lemon grass essential oil is highly effective in vapour phase against C. albicans, leading to deleterious

  20. Characterization of thin TiO2 films prepared by plasma enhanced chemical vapour deposition for optical and photocatalytic applications

    International Nuclear Information System (INIS)

    Thin titanium oxide films were deposited using a radio frequency (RF) plasma enhanced chemical vapour deposition method. Their optical properties and thickness were determined by means of ultraviolet-visible absorption spectrophotometry. Films of the optical parameters very close to those of titanium dioxide have been obtained at the high RF power input. Their optical quality is high enough to allow for their use in a construction of stack interference optical filters. At the same time, these materials exhibit strong photocatalytic effects. The results of structural analysis, carried out by Raman Shift Spectroscopy, show that the coatings posses amorphous structure. However, Raman spectra of the same films subjected to thermal annealing at 450 oC disclose an appearance of a crystalline form, namely that of anatase. Surface morphology of the films has also been characterized by Atomic Force Microscopy revealing granular, broccoli-like topography of the films.

  1. Low Density Self-Assembled InAs/GaAs Quantum Dots Grown by Metal Organic Chemical Vapour Deposition

    Institute of Scientific and Technical Information of China (English)

    LI Lin; LIU Guo-Jun; WANG Xiao-Hua; LI Mei; LI Zhan-Guo; WAN Chun-Ming

    2008-01-01

    The serf-assembled InAs quantum dots (QDs) on GaAs substrates with low density (5×108cm-2) are achieved using relatively higher growth temperature and low InAs coverage by low-pressure metal-organic chemical vapour deposition.The macro-PL spectra exhibit three emission peaks at 1361,1280 and 1204nm,corresponding to the ground level (GS),the first excited state (ES1) and the second excited state (ES2) of the QDs,respectively,which are obtained when the GaAs capping layer/s grown using triethylgallium and tertiallybutylarsine.As a result of micro-PL,only a few peaks from individual dots have been observed.The exciton-biexciton behaviour was clearly observed at low temperature.

  2. Atmospheric pressure chemical vapour deposition of thermochromic tungsten doped vanadium dioxide thin films for use in architectural glazing

    International Nuclear Information System (INIS)

    Atmospheric pressure chemical vapour deposition of VCl4, WCl6 and water at 550 oC lead to the production of high quality tungsten doped vanadium dioxide thin films. Careful control of the gas phase precursors allowed for tungsten doping up to 8 at.%. The transition temperature of the thermochromic switch was tunable in the range 55 oC to - 23 oC. The films were analysed using X-ray diffraction, scanning electron microscopy, Raman spectroscopy and X-ray photoelectron spectroscopy. Their optical properties were examined using variable-temperature transmission and reflectance spectroscopy. It was found that incorporation of tungsten into the films led to an improvement in the colour from yellow/brown to green/blue depending on the level of tungsten incorporation. The films were optimized for optical transmission, thermochromic switching temperature, magnitude of the switching behaviour and colour to produce films that are suitable for use as an energy saving environmental glass product.

  3. Growth of aligned single-walled carbon nanotubes under ac electric fields through floating catalyst chemical vapour deposition

    Institute of Scientific and Technical Information of China (English)

    Dou Xin-Yuan; Luo Shu-Dong; Zhang Zeng-Xing; Liu Dong-Fang; Wang Jian-Xiong; Gao Yan; Zhou Wei-Ya; Wang Gang; Zhou Zhen-Ping; Tan Ping-Heng; Zhou Jian-Jun; Song Li; Sun Lian-Feng; Jiang Peng; Liu Li-Feng; Zhao Xiao-Wei

    2005-01-01

    Through floating catalyst chemical vapour deposition(CVD) method, well-aligned isolated single-walled carbon nanotubes (SWCNTs) and their bundles were deposited on the metal electrodes patterned on the SiO2/Si surface under ac electric fields at relatively low temperature(280℃). It was indicated that SWCNTs were effectively aligned under ac electric fields after they had just grown in the furnace. The time for a SWCNT to be aligned in the electric field and the effect of gas flow were estimated. Polarized Raman scattering was performed to characterize the aligned structure of SWCNTs. This method would be very useful for the controlled fabrication and preparation of SWCNTs in practical applications.

  4. Structural and Luminescent Properties of ZnO Thin Films Deposited by Atmospheric Pressure Chemical Vapour Deposition

    Institute of Scientific and Technical Information of China (English)

    ZHAO Guo-Liang; LIN Bi-Xia; HONG Liang; MENG Xiang-Dong; FU Zhu-Xi

    2004-01-01

    ZnO thin films were successfully deposited on Si (100) substrates by chemical vapour deposition (CVD) at atmospheric pressure (1 atm). The only solid source used here is zinc acetate, (CHsCOO)2Zn, and the carrier gas is nitrogen. The sample, which was prepared at 550℃ during growth and then annealed in air at 900℃ , has only a ZnO (002) diffraction peak at 34.6° with its FWHM of 0.23° in the XRD pattern. The room-temperature PL spectrum shows a strong ultraviolet emission with the peak centred at 380nm. We analysed the effects of many factors, such as the source, substrates, growth and annealing temperatures, and annealing ambience, on the structural and optical properties of our prepared ZnO films.

  5. Atmospheric pressure chemical vapour deposition of NbSe2-TiSe2 composite thin films

    International Nuclear Information System (INIS)

    Atmospheric pressure chemical vapour deposition of titanium tetrachloride and niobium pentachloride with di-tert-butyl selenide at 550 deg. C was investigated for different precursors' flow rates. Scanning electron microscopy of the films showed that they were composed of two different kinds of plate-like crystallites. Point wavelength dispersive X-ray (WDX) analyses of the crystallites revealed that they either had the NbSe2 or the TiSe2 composition. The presence of the two phases was confirmed by X-ray diffraction (XRD) and the calculated cell parameters indicate that niobium or titanium was not incorporated into each others' lattice. WDX and XRD analyses highlighted how the NbSe2:TiSe2 ratio in the composite films could be controlled by precursor flow rate.

  6. Growth and characterization of nitrogen-doped single-walled carbon nanotubes by water-plasma chemical vapour deposition

    International Nuclear Information System (INIS)

    Nitrogen-doped single-walled carbon nanotubes (N-SWNTs) are directly grown on SiO2/Si substrates at 450 deg. C with methane and ammonia gases by water-plasma chemical vapour deposition. The strongest radial breathing mode peak in Raman spectra of the grown N-SWNTs, probed with a 633 nm laser excitation, was assigned to (7, 5) semiconducting nanotubes with a diameter of 0.83 nm. As the doped nitrogen content increases, the D-band to G-band ratio in Raman spectra, indicating the imperfection of nanotubes, gradually increases and saturates at around 4%. X-ray photoelectron spectroscopy shows that nitrogen atoms are doped with a pyridine-like configuration in the N-SWNTs

  7. Perfluorodecyltrichlorosilane-based seed-layer for improved chemical vapour deposition of ultrathin hafnium dioxide films on graphene

    Science.gov (United States)

    Kitzmann, Julia; Göritz, Alexander; Fraschke, Mirko; Lukosius, Mindaugas; Wenger, Christian; Wolff, Andre; Lupina, Grzegorz

    2016-01-01

    We investigate the use of perfluorodecyltrichlorosilane-based self-assembled monolayer as seeding layer for chemical vapour deposition of HfO2 on large area CVD graphene. The deposition and evolution of the FDTS-based seed layer is investigated by X-ray photoelectron spectroscopy, Auger electron spectroscopy, and transmission electron microscopy. Crystalline quality of graphene transferred from Cu is monitored during formation of the seed layer as well as the HfO2 growth using Raman spectroscopy. We demonstrate that FDTS-based seed layer significantly improves nucleation of HfO2 layers so that graphene can be coated in a conformal way with HfO2 layers as thin as 10 nm. Proof-of-concept experiments on 200 mm wafers presented here validate applicability of the proposed approach to wafer scale graphene device fabrication. PMID:27381715

  8. Properties of MgB2 films grown at various temperatures by hybrid physical chemical vapour deposition

    Science.gov (United States)

    Chen, Ke; Veldhorst, Menno; Lee, Che-Hui; Lamborn, Daniel R.; DeFrain, Raymond; Redwing, Joan M.; Li, Qi; Xi, X. X.

    2008-09-01

    A hybrid physical-chemical vapour deposition (HPCVD) system consisting of separately controlled Mg-source heater and substrate heater is used to grow MgB2 thin films and thick films at various temperatures. We are able to grow superconducting MgB2 thin films at temperatures as low as 350 °C with a Tc0 of 35.5 K. MgB2 films up to 4 µm in thickness grown at 550 °C have Jc over 106 A cm-2 at 5 K and zero applied field. The low deposition temperature of MgB2 films is desirable for all-MgB2 tunnel junctions and MgB2 thick films are important for applications in coated conductors.

  9. Properties of MgB{sub 2} films grown at various temperatures by hybrid physical-chemical vapour deposition

    Energy Technology Data Exchange (ETDEWEB)

    Chen, Ke; Veldhorst, Menno; Li, Qi; Xi, X X [Department of Physics, Pennsylvania State University, University Park, PA 16802 (United States); Lee, Che-Hui; Lamborn, Daniel R; DeFrain, Raymond; Redwing, Joan M [Department of Materials Science and Engineering, Pennsylvania State University, University Park, PA 16802 (United States)

    2008-09-15

    A hybrid physical-chemical vapour deposition (HPCVD) system consisting of separately controlled Mg-source heater and substrate heater is used to grow MgB{sub 2} thin films and thick films at various temperatures. We are able to grow superconducting MgB{sub 2} thin films at temperatures as low as 350 deg. C with a T{sub c0} of 35.5 K. MgB{sub 2} films up to 4 {mu}m in thickness grown at 550 deg. C have J{sub c} over 10{sup 6} A cm{sup -2} at 5 K and zero applied field. The low deposition temperature of MgB{sub 2} films is desirable for all-MgB{sub 2} tunnel junctions and MgB{sub 2} thick films are important for applications in coated conductors.

  10. Properties of MgB2 films grown at various temperatures by hybrid physical-chemical vapour deposition

    International Nuclear Information System (INIS)

    A hybrid physical-chemical vapour deposition (HPCVD) system consisting of separately controlled Mg-source heater and substrate heater is used to grow MgB2 thin films and thick films at various temperatures. We are able to grow superconducting MgB2 thin films at temperatures as low as 350 deg. C with a Tc0 of 35.5 K. MgB2 films up to 4 μm in thickness grown at 550 deg. C have Jc over 106 A cm-2 at 5 K and zero applied field. The low deposition temperature of MgB2 films is desirable for all-MgB2 tunnel junctions and MgB2 thick films are important for applications in coated conductors

  11. Perfluorodecyltrichlorosilane-based seed-layer for improved chemical vapour deposition of ultrathin hafnium dioxide films on graphene.

    Science.gov (United States)

    Kitzmann, Julia; Göritz, Alexander; Fraschke, Mirko; Lukosius, Mindaugas; Wenger, Christian; Wolff, Andre; Lupina, Grzegorz

    2016-01-01

    We investigate the use of perfluorodecyltrichlorosilane-based self-assembled monolayer as seeding layer for chemical vapour deposition of HfO2 on large area CVD graphene. The deposition and evolution of the FDTS-based seed layer is investigated by X-ray photoelectron spectroscopy, Auger electron spectroscopy, and transmission electron microscopy. Crystalline quality of graphene transferred from Cu is monitored during formation of the seed layer as well as the HfO2 growth using Raman spectroscopy. We demonstrate that FDTS-based seed layer significantly improves nucleation of HfO2 layers so that graphene can be coated in a conformal way with HfO2 layers as thin as 10 nm. Proof-of-concept experiments on 200 mm wafers presented here validate applicability of the proposed approach to wafer scale graphene device fabrication. PMID:27381715

  12. Room-Temperature Ferromagnetic ZnMnO Thin Films Synthesized by Plasma Enhanced Chemical Vapour Deposition Method

    Institute of Scientific and Technical Information of China (English)

    LIN Ying-Bin; ZHANG Feng-Ming; DU You-Wei; HUANG Zhi-Gao; ZHENG Jian-Guo; LU Zhi-Hai; ZOU Wen-Qin; LU Zhong-Lin; XU Jian-Ping; JI Jian-Ti; LIU Xing-Chong; WANG Jian-Feng; LV Li-Ya

    2007-01-01

    Room-temperature ferromagnetic Mn-doped ZnO films are grown on Si (001) substrates by plasma enhanced chemical vapour deposition (PECVD). X-ray diffraction measurements reveal that the Zn1-xMnxO films have the single-phase wurtzite structure. X-ray photoelectron spectroscopy indicates the existence of Mn2+ ions in Mndoped ZnO films. Furthermore, the decreasing additional Raman peak with increasing Mn-doping is considered to relate to the substitution of Mn ions for the Zn ions in ZnO lattice. Superconducting quantum interference device (SQUID) measurements demonstrate that Mn-doped ZnO films have ferromagnetic behaviour at room temperature.

  13. The properties of GaMnN films grown by metalorganic chemical vapour deposition using Raman spectroscopy

    Institute of Scientific and Technical Information of China (English)

    Xing Hai-Ying; Niu Ping-Juan; Xie Yu-Xin

    2012-01-01

    An investigation of room-temperature Raman scattering is carried out on ferromagnetic semiconductor GaMnN films grown by metalorganic chemical vapour deposition with different Mn content values.New bands around 300 and 669 cm-1,that are not observed in undoped GaN,are found.They are assigned to disorder-activated mode and local vibration mode (LVM),respectively.After annealing,the intensity ratio between the LVM and E2(high) mode,i.e.,ILVM/IE2(high),increases.The LO phonon-plasmon coupled (LOPC) mode is found in GaMnN,and the frequency of the LOPC mode of GaMnN shifting toward higher side is observed with the increase in the Mn doping in GaN.The ferromagnetic character and the carrier density of our GaMnN sample are discussed.

  14. Spark assisted chemical engraving (SACE) in microfactory

    Science.gov (United States)

    Wüthrich, R.; Fujisaki, K.; Couthy, Ph; Hof, L. A.; Bleuler, H.

    2005-10-01

    Spark assisted chemical engraving (SACE) is a method for 3D microstructuring of glass or other non-conductive materials with high aspect ratio and smooth surface quality. It is applicable for rapid prototyping of microfluidic devices, for MEMS interfacing and similar applications. Typical feature size is in the hundreds of micrometres, down to a few tens of micrometres. It is a table-top technology requiring no clean rooms and no masks and with very modest space usage. It is thus well suited for microfactories. This paper gives a basic introduction to SACE and some machining examples.

  15. Low-pressure chemical vapour deposition growth of high-quality ZnO films on epi-GaN/α-Al2O3

    International Nuclear Information System (INIS)

    We present the first results on (0001) ZnO/(0001) epi-GaN/(0001) α-Al2O3 heterostructure fabrication combining metal-organic vapour phase epitaxy and low-pressure chemical vapour deposition methods. The surface morphologies of the films were studied, and x-ray and reflection high-energy electron diffraction measurements were made, which showed a high degree of structural perfection of the ZnO films, with crystallite misorientation as low as 21'. The measured photoluminescence spectra of the films featured prevailingly emission within the excitonic region. (author). Letter-to-the-editor

  16. Charge effect of superparamagnetic iron oxide nanoparticles on their surface functionalization by photo-initiated chemical vapour deposition

    International Nuclear Information System (INIS)

    Diverse applications of superparamagnetic iron oxide nanoparticles (SPIONs) in the chemical and biomedical industry depend on their surface properties. In this paper, we investigate the effect of initial surface charge (bare, positively and negatively charged SPIONs) on the resulting physicochemical properties of the particles following treatment through photo-initiated chemical vapour deposition (PICVD). Transmission electron microscopy shows a nanometric polymer coating on the SPIONs and contact angle measurements with water demonstrate that their surface became non-polar following functionalization using PICVD. FTIR and XPS data confirm the change in the chemical composition of the treated SPIONs. Indeed, XPS data reveal an initial charge-dependent increase in the surface oxygen content in the case of treated SPIONs. The O/C percentage ratios of the bare SPIONs increase from 1.7 to 1.9 after PICVD treatment, and decrease from 1.7 to 0.7 in the case of negatively charged SPIONs. The ratio remains unchanged for positively charged SPIONs (1.7). This indicates that bare and negatively charged SPIONs showed opposite preference for the oxygen or carbon attachment to their surface during their surface treatment. These results reveal that both the surface charge and stereochemical effects have determinant roles in the polymeric coating of SPIONs with PICVD. Our findings suggest that this technique is appropriate for the treatment of nanoparticles.Graphical Abstract

  17. Charge effect of superparamagnetic iron oxide nanoparticles on their surface functionalization by photo-initiated chemical vapour deposition

    Energy Technology Data Exchange (ETDEWEB)

    Javanbakht, Taraneh [Ecole Polytechnique of Montreal, Department of Chemical Engineering (Canada); Laurent, Sophie; Stanicki, Dimitri [University of Mons, Laboratory of NMR and Molecular Imaging (Belgium); Raphael, Wendell; Tavares, Jason Robert, E-mail: jason.tavares@polymtl.ca [Ecole Polytechnique of Montreal, Department of Chemical Engineering (Canada)

    2015-12-15

    Diverse applications of superparamagnetic iron oxide nanoparticles (SPIONs) in the chemical and biomedical industry depend on their surface properties. In this paper, we investigate the effect of initial surface charge (bare, positively and negatively charged SPIONs) on the resulting physicochemical properties of the particles following treatment through photo-initiated chemical vapour deposition (PICVD). Transmission electron microscopy shows a nanometric polymer coating on the SPIONs and contact angle measurements with water demonstrate that their surface became non-polar following functionalization using PICVD. FTIR and XPS data confirm the change in the chemical composition of the treated SPIONs. Indeed, XPS data reveal an initial charge-dependent increase in the surface oxygen content in the case of treated SPIONs. The O/C percentage ratios of the bare SPIONs increase from 1.7 to 1.9 after PICVD treatment, and decrease from 1.7 to 0.7 in the case of negatively charged SPIONs. The ratio remains unchanged for positively charged SPIONs (1.7). This indicates that bare and negatively charged SPIONs showed opposite preference for the oxygen or carbon attachment to their surface during their surface treatment. These results reveal that both the surface charge and stereochemical effects have determinant roles in the polymeric coating of SPIONs with PICVD. Our findings suggest that this technique is appropriate for the treatment of nanoparticles.Graphical Abstract.

  18. Adsorption and surface diffusion of silicon growth species in silicon carbide chemical vapour deposition processes studied by quantum-chemical computations

    OpenAIRE

    Kalered, Emil; Pedersen, Henrik; Janzén, Erik; Ojamäe, Lars

    2013-01-01

    The effect chlorine addition to the gas mixture has on the surface chemistry in the chemical vapour deposition (CVD) process for silicon carbide (SiC) epitaxial layers is studied by quantum-chemical calculations of the adsorption and diffusion of SiH2 and SiCl2 on the (000-1) 4H–SiC surface. SiH2 was found to bind more strongly to the surface than SiCl2 by approximately 100 kJ mol−1 and to have a 50 kJ mol−1 lower energy barrier for diffusion on the fully hydrogen-terminated surface. On a bar...

  19. Well-controlled metal co-catalysts synthesised by chemical vapour impregnation for photocatalytic hydrogen production and water purification.

    Science.gov (United States)

    Su, Ren; Forde, Michael M; He, Qian; Shen, Yanbin; Wang, Xueqin; Dimitratos, Nikolaos; Wendt, Stefan; Huang, Yudong; Iversen, Bo B; Kiely, Christopher J; Besenbacher, Flemming; Hutchings, Graham J

    2014-10-28

    As co-catalyst materials, metal nanoparticles (NPs) play crucial roles in heterogeneous photocatalysis. The photocatalytic performance strongly relies on the physical properties (i.e., composition, microstructure, and surface impurities) of the metal NPs. Here we report a convenient chemical vapour impregnation (CVI) approach for the deposition of monometallic-, alloyed, and core-shell structured metal co-catalysts onto the TiO2 photocatalyst. The as-synthesised metal NPs are highly dispersed on the support and show narrow size distributions, which suit photocatalysis applications. More importantly, the surfaces of the as-synthesised metal NPs are free of protecting ligands, enabling the photocatalysts to be ready to use without further treatment. The effect of the metal identity, the alloy chemical composition, and the microstructure on the photocatalytic performance has been investigated for hydrogen production and phenol decomposition. Whilst the photocatalytic H2 production performance can be greatly enhanced by using the core-shell structured co-catalyst (Pdshell-Aucore and Ptshell-Aucore), the Ptshell-Aucore modified TiO2 yields enhanced quantum efficiency but a reduced effective decomposition of phenol to CO2 compared to that of the monometallic counterparts. We consider the CVI approach provides a feasible and elegant process for the decoration of photocatalyst materials. PMID:24970298

  20. PENGARUH KATALIS Co DAN Fe TERHADAP KARAKTERISTIK CARBON NANOTUBES DARI GAS ASETILENA DENGAN MENGGUNAKAN PROSES CATALYTIC CHEMICAL VAPOUR DEPOSITION (CCVD

    Directory of Open Access Journals (Sweden)

    Tutuk Djoko Kusworo

    2013-11-01

    Full Text Available EFFECT OF Co AND Fe ON CARBON NANOTUBES CHARACTERISTICS FROM ACETYLENE USING CATALYTIC CHEMICAL VAPOUR DEPOSITION (CCVD PROCESS. Carbon Nanotubes (CNTs is one of the most well known nano-technology applications which the most of attracting the attention of researchers, because it has more advantages than other materials. The application of the CNT has extended into various aspects, such as electronics, materials, biology and chemistry. This research uses a system of Catalytic Chemical Vapour Deposition (CCVD, which aims to determine the influence of Co and Fe as a catalyst and zeolite 4A as a support catalyst with acetylene gas (C2H2 as carbon source in the synthesis of Carbon Nanotubes (CNTs. In this experiment, used the ratio of acetylene gas and flow rate of N2 gas is 1:1 by weight of the catalyst Co/Zeolite and Fe/Zeolite amounted to 0.5 grams at the operating temperature of 700oC for 20 minutes. N2 gas serves to minimize the occurrence of oxidation reaction (explosion when operating. From analysis result by Scanning Electron Microscopy (SEM shows the CNTs formed a type of MWNT with different of diameter size and product weight, depending on the size of the active component concentration on the catalyst. The larger of active components produced CNTs with larger diameter, whereas product weight syntheses result smaller. Use of the catalyst Fe/Zeolite produce CNTs with a diameter larger than the catalyst Co/Zeolite.  Carbon Nanotubes (CNTs merupakan salah satu aplikasi nanoteknologi yang paling terkenal dan banyak menarik perhatian para peneliti, karena memiliki beberapa kelebihan daripada material lainnya. Aplikasi dari CNT telah merambah ke berbagai aspek, seperti bidang elektronika, material, biologi dan kimia. Penelitian ini menggunakan sistem Catalytic Chemical Vapour Deposition (CCVD yang bertujuan untuk mengetahui pengaruh variasi Cobalt (Co dan Ferrum (Fe sebagai katalis dan zeolit tipe 4A sebagai penyangga katalis dengan gas

  1. XMCD studies of Co{sub x}Pt{sub 100-x} nanoparticles prepared by vapour deposition and chemical synthesis

    Energy Technology Data Exchange (ETDEWEB)

    Imperia, P. [Universitaet Hamburg, Institut fuer Experimentalphysik, Luruper Chaussee 149, 22761 Hamburg (Germany); ANSTO, Institute of Materials and Engineering, New Illawarra Road, Lucas Heights, Sydney, NSW (Australia); Glaser, L.; Martins, M.; Wurth, W. [Universitaet Hamburg, Institut fuer Experimentalphysik, Luruper Chaussee 149, 22761 Hamburg (Germany); Andreazza, P.; Penuelas, J.; Andreazza-Vignolle, C. [Centre de Recherce sur la Matiere Divisee, UMR6619, CNRS-University of Orleans, 1B rue de la Ferollerie, 45071 Orleans Cedex 2 (France); Alessandrovic, V.; Weller, H. [Universitaet Hamburg, Institut fuer Physikalische Chemie, Grindelallee 117, 20146 Hamburg (Germany)

    2008-05-15

    An almost linear relation between the Pt amount and the orbital to spin moment ratio ({mu}{sub l}/{mu}{sub s}) has been found in Co{sub x}Pt{sub 100-x} nanoparticles prepared by vapour deposition and possessing a well defined chemically disordered crystallographic structure. X-ray magnetic circular dichroism (XMCD) measurements done at the L{sub 2,3}Co edges show that a 4.0 nm, x=100 Co reference sample has a ratio {mu}{sub l}/{mu}{sub s}=0.097, comparable to values found for Co thin layers. An increase of the amount of Pt increases the {mu}{sub l}/{mu}{sub s} value: {mu}{sub l}/{mu}{sub s}=0.11 for x=78, {mu}{sub l}/{mu}{sub s}=0.12 when x=74 and finally, for x=38 it becomes {mu}{sub l}/{mu}{sub s}=0.140. Nanoparticles prepared by chemical synthesis with size proportional to changes of the stoichiometric ratio, from Co{sub 25}Pt{sub 75} to Co{sub 50}Pt{sub 50}, show values of the orbital to spin moment ratio compatible with the trend found for the former ones. The samples prepared by chemical synthesis in a diameter range from 4 nm to 8 nm are characterized by a sharp size distribution of 10%. In contrast to the in situ prepared nanoparticles that are oxide free, however, they show a varying degree of surface oxidation depending on the ambient conditions they are exposed to. (copyright 2008 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  2. Surface and Compositional Study of Graphene grown on Lithium Niobate (LiNbO3) substrates by Chemical Vapour Deposition

    Science.gov (United States)

    Karamat, Shumaila; Celik, Umit; Oral, Ahmet

    The diversity required in the designing of electronic devices motivated the community to always attempt for new functional materials and device structures. Graphene is considered as one of the most promising candidate materials for future electronics and carbon based devices. It is very exciting to combine graphene with new dielectric materials which exhibit multifunctional properties. Lithium Niobate exhibits ferro-, pyro-, and piezoelectric properties with large electro-optic, acousto-optic, and photoelastic coefficients as well as strong photorefractive and photovoltaic effects which made it one of the most extensively studied materials over the last 50 years. We used ambient pressure chemical vapour deposition to grow graphene on LiNbO3 substrates without any catalyst. The growth was carried out in presence of methane, argon and hydrogen. AFM imaging showed very unique structures on the surface which contains triangular domains. X-ray photoelectron spectroscopy (XPS) was used to get information about the presence of necessary elements, their bonding with LiNbO3 substrates. Detailed characterization is under process which will be presented later.

  3. Metal organic chemical vapour deposition of SrRuO3 thin films on SrTiO3

    International Nuclear Information System (INIS)

    SrRuO3 with pseudo-cubic crystalline structure (a=0.393 nm) appears to be one of the most suitable conductive oxides to be used as bottom electrode for the oxide-based electronic devices, due to its high conductivity and low lattice misfit with many functional perovskite transition metal oxides. Furthermore, this electrode has a lower density of defects (oxygen vacancies, dislocations, dead layer) compared with metal electrodes (Pt,Ru,Ir). A vertical liquid-delivery metal-organic chemical vapour deposition (MO-CVD) reactor was used to deposit (100)-oriented SrRuO3 films on vicinal SrTiO3(100) substrates. In order to grow epitaxial thin films with low defect density and high electrical conductivity and to optimise the deposition parameters, the influence of deposition temperature (500-700 C), argon/oxygen ratio (1.6-3.3), total gas flow (4875-8125 sccm) and reactor pressure (12 mbar-40 mbar) was investigated. Composition of the films was identified by GDOES technique. Raman and XRD were used to determine film orientation and the surface morphology and roughness was analysed by AFM and SEM microscopy

  4. Atmospheric pressure chemical vapour deposition of thermochromic tungsten doped vanadium dioxide thin films for use in architectural glazing

    Energy Technology Data Exchange (ETDEWEB)

    Blackman, Christopher S., E-mail: c.blackman@ucl.ac.u [Department of Chemistry, University College London, 20 Gordon Street, London, WC1H 0AJ (United Kingdom); Piccirillo, C.; Binions, R.; Parkin, Ivan P. [Department of Chemistry, University College London, 20 Gordon Street, London, WC1H 0AJ (United Kingdom)

    2009-06-30

    Atmospheric pressure chemical vapour deposition of VCl{sub 4}, WCl{sub 6} and water at 550 {sup o}C lead to the production of high quality tungsten doped vanadium dioxide thin films. Careful control of the gas phase precursors allowed for tungsten doping up to 8 at.%. The transition temperature of the thermochromic switch was tunable in the range 55 {sup o}C to - 23 {sup o}C. The films were analysed using X-ray diffraction, scanning electron microscopy, Raman spectroscopy and X-ray photoelectron spectroscopy. Their optical properties were examined using variable-temperature transmission and reflectance spectroscopy. It was found that incorporation of tungsten into the films led to an improvement in the colour from yellow/brown to green/blue depending on the level of tungsten incorporation. The films were optimized for optical transmission, thermochromic switching temperature, magnitude of the switching behaviour and colour to produce films that are suitable for use as an energy saving environmental glass product.

  5. InGa1−N fibres grown on Au/SiO2 by chemical vapour deposition

    Indian Academy of Sciences (India)

    A Ramos-Carrazco; R García; M Barboza-Flores; R Rangel

    2014-12-01

    The growth of InGa1−N films ( = 0.1 and = 0.2) on a thin gold layer (Au/SiO2) by chemical vapour deposition (CVD) at 650 °C is reported. As a novelty, the use of a Ga–In metallic alloy to improve the indium incorporation in the InGa1−N is proposed. The results of high quality InGa1−N films with a thickness of three micrometres and the formation of microfibres on the surface are presented. A morphological comparison between the InGa1−N and GaN films is shown as a function of the indium incorporation. The highest crystalline InGa1−N films structure was obtained with an indium composition of = 0.20. Also, the preferential growth on the (002) plane over In0.2Ga0.8N was observed by means of X-ray diffraction. The thermoluminescence (TL) of the InGa1−N films after beta radiation exposure was measured indicating the presence of charge trapping levels responsible for a broad TL glow curve with a maximum intensity around 150 °C. The TL intensity was found to depend on composition being higher for = 0.1 and increases as radiation dose increases.

  6. Photoluminescence and lasing properties of InAs/GaAs quantum dots grown by metal-organic chemical vapour deposition

    Institute of Scientific and Technical Information of China (English)

    Liang Song; Wang Wei; Zhu Hong-Liang; Pan Jiao-Qing; Zhao Ling-Juan; Wang Lu-Feng; Zhou Fan; Shu Hui-Yun; Bian Jing; An Xin

    2008-01-01

    Photoluminescence (PL) and lasing properties of InAs/GaAs quantum dots (QDs) with different growth procedures prepared by metalorganic chemical vapour deposition are studied.PL measurements show that the low growth rate QD sample has a larger PL intensity and a narrower PL line width than the high growth rate sample.During rapid thermal annealing,however,the low growth rate sample shows a greater blueshift of PL peak wavelength.This is caused by the larger InAs layer thickness which results from the larger 2-3 dimensional transition critical layer thickness for the QDs in the low-growth-rate sample.A growth technique including growth interruption and in-situ annealing,named indium flush method,is used during the growth of GaAs cap layer,which can flatten the GaAs surface effectively.Though the method results in a blueshift of PL peak wavelength and a broadening of PL line width,it is essential for the fabrication of room temperature working QD lasers.

  7. Role of Duty Ratio in Diamond Growth by Pulsed DC-Bias Enhanced Hot Filament Chemical Vapour Deposition

    International Nuclear Information System (INIS)

    In this study, the role of the pulse duty ratio was investigated during the deposition of diamond films in a hot filament chemical vapour deposition reactor with a pulsed-dc biased substrate positively relative to the hot filaments. The voltage-current characteristics showed that the discharge current rose with the increase of biasing voltage, which was modified by the duty ratio. Before deposition, two approaches were adopted for the pre-treatment of the silicon substrates, respectively, and the substrates were scratched by diamond paste or seeded by diamond powders using the so-called 'soft dry polished' technique. Diamond films were deposited under a fixed discharge power by changing the duty ratios. In the first group with scratched substrates, it was found that under a high duty ratio the diamond grew slowly with quite poor nucleation, while in the second case a high duty ratio induced a high deposition rate and good diamond quality. Reactive hydrocarbon species with high energy are essential for the initial nucleation process, which is more effectively achieved at a high biasing voltage in the condition of a low duty ratio. In the film growth process, the large discharge current at a high duty ratio represents an increased concentration of electrons and reactive species as well, promoting the growth of diamond films

  8. Optical and electrical properties of ZrSe3 single crystals grown by chemical vapour transport technique

    Indian Academy of Sciences (India)

    Kaushik Patel; Jagdish Prajapati; Rajiv Vaidya; S G Patel

    2005-08-01

    Single crystals of the lamellar compound, ZrSe3, were grown by chemical vapour transport technique using iodine as a transporting agent. The grown crystals were characterized with the help of energy dispersive analysis by X-ray (EDAX), which gave confirmation about the stoichiometry. The optical band gap measurement of as grown crystals was carried out with the help of optical absorption spectra in the range 700–1450 nm. The indirect as well as direct band gap of ZrSe3 were found to be 1.1 eV and 1.47 eV, respectively. The resistivity of the as grown crystals was measured using van der Pauw method. The Hall parameters of the grown crystals were determined at room temperature from Hall effect measurements. Electrical resistivity measurements were performed on this crystal in the temperature range 303–423 K. The crystals were found to exhibit semiconducting nature in this range. The activation energy and anisotropy measurements were carried out for this crystal. Pressure dependence of electrical resistance was studied using Bridgman opposed anvils set up up to 8 GPa. The semiconducting nature of ZrSe3 single crystal was inferred from the graph of resistance vs pressure. The results obtained are discussed in detail.

  9. Temperature-dependent Hall effect studies of ZnO thin films grown by metalorganic chemical vapour deposition

    International Nuclear Information System (INIS)

    The electrical properties of zinc oxide (ZnO) thin films of various thicknesses (0.3–4.4 µm) grown by metalorganic chemical vapour deposition on glass substrates have been studied by using temperature-dependent Hall-effect (TDH) measurements in the 18–300 K range. The high quality of the layers has been confirmed with x-ray diffraction, transmission electron microscopy, scanning electron microscopy and photoluminescence techniques. TDH measurements indicate the presence of a degenerate layer which significantly influences the low-temperature data. It is found that the measured mobility generally increases with increasing layer thickness, reaching a value of 120 cm2 V−1 s−1 at room temperature for the 4.4 µm thick sample. The lateral grain size of the layers is also found to increase with thickness indicating a clear correlation between the size of the surface grains and the electrical properties of corresponding films. Theoretical fits to the Hall data suggest that the bulk conduction of the layers is dominated by a weakly compensated donor with activation energy in the 33–41 meV range and concentration of the order of 1017 cm−3, as well as a total acceptor concentration of mid-1015 cm−3. Grain boundary scattering is found to be an important limiting factor of the mobility throughout the temperature range considered

  10. Chemical vapour deposition enhanced by atmospheric microwave plasmas: a large-scale industrial process or the next nanomanufacturing tool?

    Science.gov (United States)

    Belmonte, T.; Gries, T.; Cardoso, R. P.; Arnoult, G.; Kosior, F.; Henrion, G.

    2011-04-01

    This paper describes several specific aspects of atmospheric plasma deposition carried out with a microwave resonant cavity. Deposition over a wide substrate is first studied. We show that high deposition rates (several hundreds of μm h-1) are due to localization of fluxes on the substrate by convection when slightly turbulent flows are used. Next, we describe possible routes to localize deposition over a nanometre-sized area. Scaling down atmospheric plasma deposition is possible and two strategies to reach nanometre scales are described. Finally, we study self-organization of SiO2 nanodots deposited by chemical vapour deposition at atmospheric pressure enhanced by an Ar-O2 micro-afterglow operating at high temperature (>1200 K). When the film being deposited is thin enough (~500 nm) nanodots are obtained and they can be assembled into threads to create patterned surfaces. When the coating becomes thicker (~1 µm), and for relatively high content in HMDSO, SiO2 walls forming hexagonal cells are obtained.

  11. Influence of hydrogen on chemical vapour synthesis of different carbon nanostructures using propane as precursor and nickel as catalyst

    Indian Academy of Sciences (India)

    R K Sahoo; H Mamgain; C Jacob

    2014-10-01

    The role of hydrogen in the catalytic chemical vapour deposition of carbon nanotubes using sputtered nickel thin film as a catalyst is explained in this work. The growth of different carbon nanostructures with the variation in the precursor gas content was studied by keeping all other process parameters constant and using sputtered Ni thin film as a catalyst. The catalyst granule size, its external morphology and the resulting products were analysed. Carbon nanotubes (CNTs), carbon nanofibres (CNFs) and carbon nanoribbons (CNRs) were observed under different growth conditions. The different conditions of growth leading to form tubes, fibres or ribbons were analysed by varying the flow ratio of propane and hydrogen gas during the high temperature growth. Scanning and transmission electron microscopies confirmed the above structures under different growth conditions. The role of hydrogen on the surface passivation behaviour of the Ni catalyst and its correlative effect on the growth of carbon nanostructures is analysed. This direct approach can, in principle, be used to synthesize different types of carbon nanostructures by tailoring the hydrogen concentration.

  12. Silicon nanocrystal growth in the long diffusion length regime using high density plasma chemical vapour deposited silicon rich oxides

    International Nuclear Information System (INIS)

    In this study, silicon nanocrystal (Si-nc) growth is studied in a relatively long thermal budget regime, 3 h at 1100-1200 deg. C, to examine large diameter nanocrystals (i.e. average diameters greater than 5 nm). Morphology, defects within the nanocrystals and size dependence as a function of thickness in the oxide are exaggerated in this regime and are more readily characterized in the longer diffusion length regime. In particular, nearby surfaces, the silicon substrate and oxide surface, appear to deplete the excess silicon in the oxide, leading to a strong nanocrystal size dependence with position in the oxide. To pursue this work, silicon naocrystals were formed through a combination of high density plasma enhanced chemical vapour deposition (HDP-CVD) of silicon rich oxides (SRO) followed by phase separation of the SRO into Si-ncs and stoichiometric oxide (SiO2). Details of the characterization of the as-grown HDP-CVD SROs are included, and differences in the Si-O-Si stretch mode peak position dependence on [O] between HDP-CVD and previously reported plasma enhanced CVD are discussed

  13. Excimer laser recrystallization of nanocrystalline-Si films deposited by inductively coupled plasma chemical vapour deposition at 150 deg. C

    International Nuclear Information System (INIS)

    Polycrystalline silicon thin film transistors (poly-Si TFTs) fabricated at low temperature (under 200 deg. C) have been widely investigated for flexible substrate applications such as a transparent plastic substrate. Unlike the conventional TFT process using glass substrate, the maximum process temperature should be kept less than 200 deg. C in order to avoid thermal damage on flexible substrates. We report the characteristics of nanocrystalline silicon (nc-Si) irradiated by an excimer laser. Nc-Si precursors were deposited on various buffer layers by inductively coupled plasma chemical vapour deposition (ICP-CVD) at 150 deg. C. We employed various buffer layers, such as silicon nitride (SiNX) and silicon dioxide (SiO2), in order to report recrystallization characteristics in connection with a buffer layer of a different thermal conductivity. The dehydrogenation and recrystallization was performed by step-by-step excimer laser annealing (ELA) (XeCl,λ=308 nm) in order to prevent the explosive release of hydrogen atoms. The grain size of the poly-Si film, which was recrystallized on the various buffer layers, was measured by scanning electron microscopy (SEM) at each laser energy density. The process margin of step-by-step ELA employing the SiNX buffer layer is wider than SiO2 and the maximum grain size slightly increased

  14. Excimer laser recrystallization of nanocrystalline-Si films deposited by inductively coupled plasma chemical vapour deposition at 150 deg. C

    Energy Technology Data Exchange (ETDEWEB)

    Park, Joong-Hyun [School of Electrical Engineering (50), Seoul National University, Shinlim-Dong, Gwanak-Gu, Seoul (Korea, Republic of); Han, Sang-Myeon [School of Electrical Engineering (50), Seoul National University, Shinlim-Dong, Gwanak-Gu, Seoul (Korea, Republic of); Park, Sang-Geun [School of Electrical Engineering (50), Seoul National University, Shinlim-Dong, Gwanak-Gu, Seoul (Korea, Republic of); Han, Min-Koo [School of Electrical Engineering (50), Seoul National University, Shinlim-Dong, Gwanak-Gu, Seoul (Korea, Republic of); Shin, Moon-Young [LTPS Team, AMLCD Business, Samsung Electronics Co., Giheung, Yongin City (Korea, Republic of)

    2006-09-01

    Polycrystalline silicon thin film transistors (poly-Si TFTs) fabricated at low temperature (under 200 deg. C) have been widely investigated for flexible substrate applications such as a transparent plastic substrate. Unlike the conventional TFT process using glass substrate, the maximum process temperature should be kept less than 200 deg. C in order to avoid thermal damage on flexible substrates. We report the characteristics of nanocrystalline silicon (nc-Si) irradiated by an excimer laser. Nc-Si precursors were deposited on various buffer layers by inductively coupled plasma chemical vapour deposition (ICP-CVD) at 150 deg. C. We employed various buffer layers, such as silicon nitride (SiN{sub X}) and silicon dioxide (SiO{sub 2}), in order to report recrystallization characteristics in connection with a buffer layer of a different thermal conductivity. The dehydrogenation and recrystallization was performed by step-by-step excimer laser annealing (ELA) (XeCl,{lambda}=308 nm) in order to prevent the explosive release of hydrogen atoms. The grain size of the poly-Si film, which was recrystallized on the various buffer layers, was measured by scanning electron microscopy (SEM) at each laser energy density. The process margin of step-by-step ELA employing the SiN{sub X} buffer layer is wider than SiO{sub 2} and the maximum grain size slightly increased.

  15. Study of Metal Organic Chemical Vapour Deposition (MOCVD) semiconductors III-V hyperstructures with Secondary Ion Mass Spectrometry (SIMS)

    International Nuclear Information System (INIS)

    One of the most promising technologies in high efficiency solar cells is based on quaternary structures grown by epitaxial techniques as Metal Organic Chemical Vapour deposition (MOCVD). The semiconductors III-V structures are elaborated under tailored parameters, allowing the use of a broader area of the solar spectrum. Analytical techniques capable of providing accurate and precise information in cross sections about the composition and thickness of the layers are demanded. Secondary Ion Mass Spectrometry (SIMS) has been used for characterization of these structures due to its high depth resolution and sensitivity, stability and reproducibility. It was detected the diffusion process of Al and In across the cell interfaces and the layer diffusion over GaAs substrates. The Al diffusion was associated at incorrect incorporation of elements during growth process and the layer diffusion was associated at changes of manufacturing parameters. Such studies show the SIMS ability to diagnose of faults during the growth process, detection of impurities and incorrect diffusion of dopants that may affect the layer properties and the structure functionality

  16. Deposition and characterization of diamond-like nanocomposite coatings grown by plasma enhanced chemical vapour deposition over different substrate materials

    Indian Academy of Sciences (India)

    Awadesh Kr Mallik; Nanadadulal Dandapat; Prajit Ghosh; Utpal Ganguly; Sukhendu Jana; Sayan Das; Kaustav Guha; Garfield Rebello; Samir Kumar Lahiri; Someswar Datta

    2013-04-01

    Diamond-like nanocomposite (DLN) coatings have been deposited over different substrates used for biomedical applications by plasma-enhanced chemical vapour deposition (PECVD). DLN has an interconnecting network of amorphous hydrogenated carbon and quartz-like oxygenated silicon. Raman spectroscopy, Fourier transform–infra red (FT–IR) spectroscopy, transmission electron microscopy (TEM) and X-ray diffraction (XRD) have been used for structural characterization. Typical DLN growth rate is about 1 m/h, measured by stylus profilometer. Due to the presence of quartz-like Si:O in the structure, it is found to have very good adhesive property with all the substrates. The adhesion strength found to be as high as 0.6 N on SS 316 L steel substrates by scratch testing method. The Young’s modulus and hardness have found to be 132 GPa and 14.4 GPa, respectively. DLN coatings have wear factor in the order of 1 × 10-7 mm3/N-m. This coating has found to be compatible with all important biomedical substrate materials and has successfully been deposited over Co–Cr alloy based knee implant of complex shape.

  17. In situ high temperature XRD studies of ZnO nanopowder prepared via cost effective ultrasonic mist chemical vapour deposition

    Indian Academy of Sciences (India)

    Preetam Singh; Ashvani Kumar; Ajay Kaushal; Davinder Kaur; Ashish Pandey; R N Goyal

    2008-06-01

    Ultrasonic mist chemical vapour deposition (UM–CVD) system has been developed to prepare ZnO nanopowder. This is a promising method for large area deposition at low temperature inspite of being simple, inexpensive and safe. The particle size, lattice parameters and crystal structure of ZnO nanopowder are characterized by in situ high temperature X-ray diffraction (XRD). Surface morphology of powder was studied using transmission electron microscopy (TEM) and field emission electron microscope (FESEM). The optical properties are observed using UV-visible spectrophotometer. The influence of high temperature vacuum annealing on XRD pattern is systematically studied. Results of high temperature XRD showed prominent 100, 002 and 101 reflections among which 101 is of highest intensity. With increase in temperature, a systematic shift in peak positions towards lower 2 values has been observed, which may be due to change in lattice parameters. Temperature dependence of lattice constants under vacuum shows linear increase in their values. Diffraction patterns obtained from TEM are also in agreement with the XRD data. The synthesized powder exhibited the estimated direct bandgap (g) of 3.43 eV. The optical bandgap calculated from Tauc’s relation and the bandgap calculated from the particle size inferred from XRD were in agreement with each other.

  18. Structural and optical properties of hydrogenated amorphous silicon carbide films by helicon wave plasma-enhanced chemical vapour deposition

    International Nuclear Information System (INIS)

    Hydrogenated amorphous silicon carbide (a-Si1-xCx : H) films with different carbon concentrations have been deposited using the helicon wave plasma-enhanced chemical vapour deposition technique under the condition of strong hydrogen dilution. The a-Si1-xCx:H films with carbon content x up to 0.64 have been deposited. Their structural and optical properties are investigated using Fourier transform infrared spectroscopy, Raman scattering, ultraviolet-visible transmittance spectroscopy and x-ray photoelectron spectroscopy. The deposition rate, optical band gap and B factor related to structural disorder are found to monotonically change in the investigated range with methane-silane gas flow ratios. It is found that the deposited films exist with the structure of Si-like clusters and Si-C networks when silicon content is high, while they consist mainly of C-like clusters and Si-C networks for carbon-rich samples. A large optical band gap is obtained in high carbon concentration samples, which is attributed to the high density characteristic of helicon wave plasmas and the strong hydrogen dilution condition

  19. Metal-organic chemical vapour deposition of lithium manganese oxide thin films via single solid source precursor

    Directory of Open Access Journals (Sweden)

    Oyedotun K.O.

    2015-12-01

    Full Text Available Lithium manganese oxide thin films were deposited on sodalime glass substrates by metal organic chemical vapour deposition (MOCVD technique. The films were prepared by pyrolysis of lithium manganese acetylacetonate precursor at a temperature of 420 °C with a flow rate of 2.5 dm3/min for two-hour deposition period. Rutherford backscattering spectroscopy (RBS, UV-Vis spectrophotometry, X-ray diffraction (XRD spectroscopy, atomic force microscopy (AFM and van der Pauw four point probe method were used for characterizations of the film samples. RBS studies of the films revealed fair thickness of 1112.311 (1015 atoms/cm2 and effective stoichiometric relationship of Li0.47Mn0.27O0.26. The films exhibited relatively high transmission (50 % T in the visible and NIR range, with the bandgap energy of 2.55 eV. Broad and diffused X-ray diffraction patterns obtained showed that the film was amorphous in nature, while microstructural studies indicated dense and uniformly distributed layer across the substrate. Resistivity value of 4.9 Ω·cm was obtained for the thin film. Compared with Mn0.2O0.8 thin film, a significant lattice absorption edge shift was observed in the Li0.47Mn0.27O0.26 film.

  20. Structural and Compositional Study of Graphene grown on SrTiO3 by Chemical Vapour Deposition

    Science.gov (United States)

    Karamat, Shumaila; Celik, Umit; Oral, Ahmet

    Graphene, a monolayer of sp2 bonded carbon atom, is considered as one of the most promising candidate materials for future electronics. The most critical step in graphene research is its transfer from the growth catalyst to the dielectric substrate, many unavoidable issues in the transfer process are: contamination from etchants, photoresist residues, wrinkles, and mechanical breakage. The direct growth of graphene on the substrates without using catalyst offer new opportunities in device fabrication without any transfer process. But till now, the field of direct graphene growth on dielectrics or insulating substrates is not mature like growth on metallic catalysts using CVD. We used chemical vapour deposition to grow graphene on SrTiO3 (110) substrates. The growth was carried out in presence of methane, argon and hydrogen. Raman Spectrum clearly showed the D and G peaks which were absent in bare substrate. XPS was used to get information about the presence of necessary elements, their bonding with STO substrates. AFM imaging clearly showed graphene island formation on substrates.

  1. Titania Coated Mica via Chemical Vapour Deposition, Post N-doped by Liquid Ammonia Treatment

    Science.gov (United States)

    Powell, Michael J.; Parkin, Ivan P.

    TiO2 films were successfully grown on synthetic mica powders via Chemical Vapor Deposition (CVD). The CVD rig is a cold-walled design that allows surface coverage of a powder to be successfully achieved. The TiO2 was produced by the reaction between TiCl4 and Ethyl Acetate. The powder produced could be successfully N-doped using post liquid ammonia treatment. The TiO2 powder produced could have potential applications in self-cleaning surfaces or antimicrobial paints.

  2. Optical visualization of individual ultralong carbon nanotubes by chemical vapour deposition of titanium dioxide nanoparticles.

    Science.gov (United States)

    Zhang, Rufan; Zhang, Yingying; Zhang, Qiang; Xie, Huanhuan; Wang, Haidong; Nie, Jingqi; Wen, Qian; Wei, Fei

    2013-01-01

    Direct visualization and manipulation of individual carbon nanotubes in ambient conditions is of great significance for their characterizations and applications. However, the observation of individual carbon nanotubes usually requires electron microscopes under high vacuum. Optical microscopes are much more convenient to be used, yet their resolution is low. Here we realize the visualization and manipulation of individual ultralong carbon nanotubes under optical microscopes by deposition of TiO2 nanoparticles on them. The strong scattering of TiO2 nanoparticles to visible light renders them visible by optical microscopes. Micro-Raman-spectroscopy measurement of individual carbon nanotubes is greatly facilitated by their optical visualization. With the assistance of TiO2 nanoparticles, individual carbon nanotubes can be easily manipulated under an optical microscope at macroscopic scale and in ambient conditions. Based on our approach, various manipulation of ultralong carbon nanotubes, including cutting, transfer, fabrication of structures/devices and pulling out inner shells of multiwalled carbon nanotubes, are demonstrated. PMID:23591894

  3. Nanofabrication using home-made RF plasma coupled chemical vapour deposition system

    International Nuclear Information System (INIS)

    Zinc oxide, ZnO, a popular semiconductor material with a wide band gap (3.37 eV) and high binding energy of the exciton (60 meV), has numerous applications such as in optoelectronics, chemical/biological sensors, and drug delivery. This project aims to (i) optimize the operating conditions for growth of ZnO nanostructures using the chemical vapor deposition (CVD) method, and (ii) investigate the effects of coupling radiofrequency (RF) plasma to the CVD method on the quality of ZnO nanostructures. First, ZnO nanowires were synthesized using a home-made reaction setup on gold-coated and non-coated Si (100) substrates at 950 °C. XRD, SEM, EDX, and PL measurements were used for characterizations and it was found that a deposition duration of 10 minutes produced the most well-defined ZnO nanowires. SEM analysis revealed that the nanowires had diameters ranging from 30-100 mm and lengths ranging from 1-4 µm. In addition, PL analysis showed strong UV emission at 380 nm, making it suitable for UV lasing. Next, RF plasma was introduced for 30 minutes. Both remote and in situ RF plasma produced less satisfactory ZnO nanostructures with poorer crystalline structure, surface morphology, and optical properties due to etching effect of energetic ions produced from plasma. However, a reduction in plasma discharge duration to 10 minutes produced thicker and shorter ZnO nanostructures. Based on experimentation conducted, it is insufficient to conclude that RF plasma cannot aid in producing well-defined ZnO nanostructures. It can be deduced that the etching effect of energetic ions outweighed the increased oxygen radical production in RF plasma nanofabrication. (author)

  4. Substrate and material transfer effects on the surface chemistry and texture of diamond-like carbon deposited by plasma-enhanced chemical vapour deposition

    OpenAIRE

    Jones, Benjamin; Ojeda, J. J.

    2012-01-01

    Diamond-like carbon (DLC), a thin amorphous carbon film, has many uses in tribological systems. Exploiting alternative substrates and interlayers can enable the control of the hardness and modulus of the multilayer system and improve wear or friction properties. We used XPS and atomic force microscopy to examine DLC that had been concurrently coated on an epoxy interlayer and a steel substrate by plasma-enhanced chemical vapour deposition. sp2/sp3 ratios were calculated both by the deconvolut...

  5. Low-temperature synthesis and characterization of helical carbon fibers by one-step chemical vapour deposition

    International Nuclear Information System (INIS)

    Graphical abstract: - Highlights: • HCNFs were synthesized by one-step CVD using cupric tartrate as a catalyst at temperature below 500 °C. • The synthesis of HCNFs is highly temperature-dependent at the synthesis temperature of 280–480 °C. • The addition of HCNFs makes a noticeable contribution to the reinforcement of NR/CB system. - Abstract: Helical carbon fibers (HCNFs) were synthesized by one-step chemical vapour deposition using cupric tartrate as a catalyst at temperature below 500 °C. The bound rubber of natural rubber (NR)/HCNFs were also prepared in this study. The results of thermogravimetry–differential scanning calorimetry (TG/DSC) for cupric tartrate nanoparticles show that the transformation of C4H4CuO6 → Cu reaction occurs at ∼250–310 °C. The characterization of scanning electron microscopy (SEM), transmission electron microscope (TEM), X-ray diffraction (XRD) and Raman spectrum for the synthesized products confirms that the synthesis of HCNFs is highly temperature-dependent. The straight fibers with the fiber diameter of 100–400 nm are obtained at 280 °C and HCNFs can be synthesized at higher temperature, with the coil diameter of 0.5–1 μm and fiber diameter of 100–200 nm at 380 °C, and the coil diameter of ∼100 nm and fiber diameter of ∼80 nm at 480 °C. The maximum of the bound-rubber content (37%) can be obtained with the addition of 100 wt.% HCNFs in NR, which indicates that the coiled configuration of HCNFs makes a noticeable contribution to the reinforcement of NR/CB system

  6. Investigation of optical and electronic properties of hafnium aluminate films deposited by Metal-Organic Chemical Vapour Deposition

    International Nuclear Information System (INIS)

    Alloying elemental high-k metal oxides (such as HfO2) with other metals is seen as an effective method of controlling the properties of the dielectric based on the concentration of cations in the mixture; in particular, mixing HfO2 with Al2O3, and forming hafnium aluminate layers which will still have a relatively high dielectric constant (typically k ∼ 15) and remain amorphous up to high processing temperatures. This paper summarizes the results of physical and electrical characterisation of hafnium aluminate (HfAl xO y) films prepared by Metal-Organic Chemical Vapour Deposition. We show how, using ultraviolet-visible, single angle ellipsometry, the thickness and composition of the deposited and of the transition/interfacial layers can be extracted, and further used for the estimation of the relative dielectric constant. Moreover, a methodology for extracting the band gap of these materials and its dependence on the aluminium concentration is presented. This has been achieved by using a simple parameterization model (Wemple-Di Domenico) to account for the optical dispersion of the films. Preparing thin films with a relatively high dielectric constant and with an amorphous structure even at high processing temperatures, are not the only requirements to be achieved when such layers are to be used as gate dielectrics. The electrical characteristics - such as leakage current, density of interface states, fixed charge in the oxide - are extremely important. The results obtained through capacitance-voltage and current-voltage measurements show the possibility of adjusting the relative dielectric constant of the layers in a wide range (9-16), when the aluminium concentration varies between 4% and 38%. The minimum leakage current occurs for Al concentrations up to 9%. The thinner films show Fowler-Nordheim conduction even at higher concentrations of Al into the film, while thicker films show a higher hysteresis due to an increased number of slow trapping centres in the

  7. Growth of AlGaSb Compound Semiconductors on GaAs Substrate by Metalorganic Chemical Vapour Deposition

    Directory of Open Access Journals (Sweden)

    A. H. Ramelan

    2010-01-01

    Full Text Available Epitaxial AlxGa1-xSb layers on GaAs substrate have been grown by atmospheric pressure metalorganic chemical vapour deposition using TMAl, TMGa, and TMSb. We report the effect of V/III flux ratio and growth temperature on growth rate, surface morphology, electrical properties, and composition analysis. A growth rate activation energy of 0.73 eV was found. For layers grown on GaAs at 580∘C and 600∘C with a V/III ratio of 3 a high quality surface morphology is typical, with a mirror-like surface and good composition control. It was found that a suitable growth temperature and V/III flux ratio was beneficial for producing good AlGaSb layers. Undoped AlGaSb grown at 580∘C with a V/III flux ratio of 3 at the rate of 3.5 μm/hour shows p-type conductivity with smooth surface morphology and its hole mobility and carrier concentration are equal to 237 cm2/V.s and 4.6 × 1017 cm-3, respectively, at 77 K. The net hole concentration of unintentionally doped AlGaSb was found to be significantly decreased with the increased of aluminium concentration. All samples investigated show oxide layers (Al2O3, Sb2O3, and Ga2O5 on their surfaces. In particular the percentage of aluminium-oxide was very high compared with a small percentage of AlSb. Carbon content on the surface was also very high.

  8. Low-temperature synthesis and characterization of helical carbon fibers by one-step chemical vapour deposition

    Energy Technology Data Exchange (ETDEWEB)

    Jin, Yongzhong [Department of Materials and Chemistry Engineering, Sichuan University of Science and Engineering, 643000 Zigong, Sichuan (China); Chen, Jian, E-mail: wuhangzs@163.com [Department of Materials and Chemistry Engineering, Sichuan University of Science and Engineering, 643000 Zigong, Sichuan (China); Fu, Qingshan [Department of Materials and Chemistry Engineering, Sichuan University of Science and Engineering, 643000 Zigong, Sichuan (China); Li, Binghong [China Rubber Group Carbon Black Industry Research and Design Institute, 643000 Zigong, Sichuan (China); Zhang, Huazhi; Gong, Yong [Department of Materials and Chemistry Engineering, Sichuan University of Science and Engineering, 643000 Zigong, Sichuan (China)

    2015-01-01

    Graphical abstract: - Highlights: • HCNFs were synthesized by one-step CVD using cupric tartrate as a catalyst at temperature below 500 °C. • The synthesis of HCNFs is highly temperature-dependent at the synthesis temperature of 280–480 °C. • The addition of HCNFs makes a noticeable contribution to the reinforcement of NR/CB system. - Abstract: Helical carbon fibers (HCNFs) were synthesized by one-step chemical vapour deposition using cupric tartrate as a catalyst at temperature below 500 °C. The bound rubber of natural rubber (NR)/HCNFs were also prepared in this study. The results of thermogravimetry–differential scanning calorimetry (TG/DSC) for cupric tartrate nanoparticles show that the transformation of C{sub 4}H{sub 4}CuO{sub 6} → Cu reaction occurs at ∼250–310 °C. The characterization of scanning electron microscopy (SEM), transmission electron microscope (TEM), X-ray diffraction (XRD) and Raman spectrum for the synthesized products confirms that the synthesis of HCNFs is highly temperature-dependent. The straight fibers with the fiber diameter of 100–400 nm are obtained at 280 °C and HCNFs can be synthesized at higher temperature, with the coil diameter of 0.5–1 μm and fiber diameter of 100–200 nm at 380 °C, and the coil diameter of ∼100 nm and fiber diameter of ∼80 nm at 480 °C. The maximum of the bound-rubber content (37%) can be obtained with the addition of 100 wt.% HCNFs in NR, which indicates that the coiled configuration of HCNFs makes a noticeable contribution to the reinforcement of NR/CB system.

  9. Antimicrobial activity of novel nanostructured Cu-SiO2 coatings prepared by chemical vapour deposition against hospital related pathogens.

    Science.gov (United States)

    Varghese, Sajnu; Elfakhri, Souad O; Sheel, David W; Sheel, Paul; Bolton, Frederick J Eric; Foster, Howard A

    2013-01-01

    There is increasing recognition that the healthcare environment acts as an important reservoir for transmission of healthcare acquired infections (HCAI). One method of reducing environmental contamination would be use of antimicrobial materials. The antimicrobial activity of thin silica-copper films prepared by chemical vapour deposition was evaluated against standard strains of bacteria used for disinfectant testing and bacteria of current interest in HCAI. The structure of the coatings was determined using Scanning Electron Microscopy and their hardness and adhesion to the substrate determined. Antimicrobial activity was tested using a method based on BS ISO 22196:2007. The coatings had a pale green-brown colour and had a similar hardness to steel. SEM showed nano-structured aggregates of Cu within a silica matrix. A log10 reduction in viability of >5 could be obtained within 4 h for the disinfectant test strains and within 6 h for producing Acinetobacter baumannii, Klebsiella pneumoniae and Stenotrophomonas maltophilia. Activity against the other hospital isolates was slower but still gave log10 reduction factors of >5 for extended spectrum β-lactamase producing Escherichia coli and >3 for vancomycin resistant Enterococcus faecium, methicillin resistant Staphylococcus aureus and Pseudomonas aeruginosa within 24 h. The results demonstrate the importance of testing antimicrobial materials destined for healthcare use against isolates of current interest in hospitals as well as standard test strains. The coatings used here can also be applied to substrates such as metals and ceramics and have potential applications where reduction of microbial environmental contamination is desirable. PMID:24007899

  10. CdTe thin film solar cells produced using a chamberless inline process via metalorganic chemical vapour deposition

    International Nuclear Information System (INIS)

    Cd1−xZnxS and CdTe:As thin films were deposited using a recently developed chamberless inline process via metalorganic chemical vapour deposition (MOCVD) at atmospheric pressure and assessed for fabrication of CdTe photovoltaic (PV) solar cells. Initially, CdS and Cd1−xZnxS coatings were applied onto 15 × 15 cm2 float glass substrates, characterised for their optical properties, and then used as the window layer in CdTe solar cells which were completed in a conventional MOCVD (batch) reactor. Such devices provided best conversion efficiency of 13.6% for Cd0.36Zn0.64S and 10% for CdS which compare favourably to the existing baseline MOCVD (batch reactor) devices. Next, sequential deposition of Cd0.36Zn0.64S and CdTe:As films was realised by the chamberless inline process. The chemical composition of a 1 μm CdTe:As/150 nm Cd0.36Zn0.64S bi-layer was observed via secondary ions mass spectroscopy, which showed that the key elements are uniformly distributed and the As doping level is suitable for CdTe device applications. CdTe solar cells formed using this structure provided a best efficiency of 11.8% which is promising for a reduced absorber thickness of 1.25 μm. The chamberless inline process is non-vacuum, flexible to implement and inherits from the legacy of MOCVD towards doping/alloying and low temperature operation. Thus, MOCVD enabled by the chamberless inline process is shown to be an attractive route for thin film PV applications. - Highlights: • CdS, CdZnS and CdTe thin films grown by a chamberless inline process • The inline films assessed for fabricating CdTe solar cells • 13.6% conversion efficiency obtained for CdZnS/CdTe cells

  11. a Study of Volatile Precursors for the Growth of Cadmium Sulphide and Cadmium Selenide by Metal Organic Chemical Vapour Deposition.

    Science.gov (United States)

    Beer, Michael P.

    Available from UMI in association with The British Library. The wide-band-gap semiconductors, cadmium sulphide and cadmium selenide, may be grown by Metal Organic Chemical Vapour Deposition (MOCVD). This method typically involves the reaction of gaseous streams of Me_2 Cd and H_2Y (Y = S, Se) over a heated substrate (usually gallium arsenide) on which the desired compound is grown as an epitaxial layer. Unfortunately, the precursors start to react in the cold zone of the reactor, that is before they reach the heated substrate. This problem is known as prereaction. The problem of prereaction is partially reduced by the use of adducts of dimethyl cadmium in place of the free dialkyl compound although the mechanism by which such adducts block prereaction is unknown. Accordingly, a study of adducts of dimethyl cadmium was undertaken with a view to determining their properties in all phases. The adduct of Me_2Cd with 2,2^ '-bipyridyl was found to be monomeric in the solid state while that with 1,4-dioxane, a volatile compound used for prereaction reduction, was found to be polymeric. A study of adducts in the gas phase using mass spectrometry and gas phase Fourier transform infrared spectroscopy gave no evidence to suggest there is any gas phase association between 1,4-dioxane and dimethyl cadmium. With the 2,2 ^'-bipyridyl adduct some evidence for partial retention of coordinate bonds upon sublimation was obtained. The solid adduct of Me _2Cd with N,N,N^' ,N^'-tetramethylethylenediamine (TMEDA) was prepared as it was hoped that the flexibility of the aliphatic Lewis base would permit the formation of an adduct containing strong co-ordinate bonds which would remain intact upon sublimation. Using gas phase electron diffraction, the structure of the adduct of Me_2Cd and TMEDA was determined. It was shown to exist in the gas phase purely as the associated monomeric species. The adduct was then employed for the growth of CdS and CdSe in an industrial MOCVD apparatus. The

  12. Synthesis of nanocrystalline silicon thin films using the increase of the deposition pressure in the hot-wire chemical vapour deposition technique

    Directory of Open Access Journals (Sweden)

    J.K. Rath

    2010-01-01

    Full Text Available Nanostructured thin silicon-based films have been deposited using the hot-wire chemical vapour deposition (HWCVD technique at the University of the Western Cape. A variety of techniques including optical and infrared spectroscopy, Raman scattering spectroscopy, X-rays diffraction (XRD and transmission electron microscopy (TEM have been used for characterisation of the films. The electrical measurements show that the films have good values of photoresponse, and the photocurrent remains stable after several hours of light soaking. This contribution will discuss the characteristics of the hydrogenated nanocrystalline silicon thin films deposited using increased process chamber pressure at a fixed hydrogen dilution ratio in monosilane gas.

  13. Amorphous silicon thin film solar cells deposited entirely by Hot-Wire Chemical Vapour Deposition at low temperature (<150 ºC)

    OpenAIRE

    Villar, Fernando; Antony, Aldrin; Escarré i Palou, Jordi; Ibarz, D.; Roldán, Rubén; Stella, Marco; Muñoz Ramos, David; Asensi López, José Miguel; Bertomeu i Balagueró, Joan

    2009-01-01

    Amorphous silicon n-i-p solar cells have been fabricated entirely by Hot-Wire Chemical Vapour Deposition (HW-CVD) at low process temperature < 150 °C. A textured-Ag/ZnO back reflector deposited on Corning 1737F by rf magnetron sputtering was used as the substrate. Doped layers with very good conductivity and a very less defective intrinsic a-Si:H layer were used for the cell fabrication. A double n-layer (μc-Si:H/a-Si:H) and μc-Si:H p-layer were used for the cell. In this paper, we report the...

  14. Evolution of Structural Defects in SiOx Films Fabricated by Electron Cyclotron Resonance Plasma Chemical Vapour Deposition upon Annealing Treatment

    Institute of Scientific and Technical Information of China (English)

    HAO Xiao-Peng; WANG Bao-Yi; Yu Run-Sheng; WEI Long; WANG Hui; ZHAO De-Gang; HAO Wei-Chang

    2008-01-01

    @@ We study the structural defects in the SiOx film prepared by electron cyclotron resonance plasma chemical vapour deposition and annealing recovery evolution.The photoluminescence property is observed in the as-deposited and annealed samples.[-SiO3]2- defects are the luminescence centres of the ultraviolet photoluminescence(PL)from the Fourier transform infrared spectroscopy and PL measurements.[-SiO3]2- is observed by positron annihilation spectroscopy,and this defect can make the S parameters increase.After 1000℃ annealing,[-SiO3]2- defects still exist in the films.

  15. Effect of plasma composition on nanocrystalline diamond layers deposited by a microwave linear antenna plasma-enhanced chemical vapour deposition system

    Czech Academy of Sciences Publication Activity Database

    Taylor, Andrew; Ashcheulov, Petr; Čada, Martin; Fekete, Ladislav; Hubík, Pavel; Klimša, Ladislav; Olejníček, Jiří; Remeš, Zdeněk; Jirka, Ivan; Janíček, P.; Bedel-Pereira, E.; Kopeček, Jaromír; Mistrík, J.; Mortet, Vincent

    2015-01-01

    Roč. 212, č. 11 (2015), s. 2418-2423. ISSN 1862-6300 R&D Projects: GA ČR GA13-31783S; GA MŠk LO1409 Grant ostatní: FUNBIO(XE) CZ.2.16/3.1.00/21568 Institutional support: RVO:68378271 ; RVO:61388955 Keywords : diamond * electrical conductivity * nanocrystalline materials * optical emission spectroscopy * plasma enhanced chemical vapour deposition * SiC Subject RIV: BM - Solid Matter Physics ; Magnetism; CF - Physical ; Theoretical Chemistry (UFCH-W) Impact factor: 1.616, year: 2014

  16. Silicon Sheets By Redox Assisted Chemical Exfoliation

    CERN Document Server

    Tchalala, Mohamed Rachid; Enriquez, Hanna; Kara, Abdelkader; Lachgar, Abdessadek; Yagoubi, Said; Foy, Eddy; Vega, Enrique; Bendounan, Azzedine; Silly, Mathieu G; Sirotti, Fausto; Nitshe, Serge; Chaudanson, Damien; Jamgotchian, Haik; Aufray, Bernard; Mayne, Andrew J; Dujardin, Gérald; Oughaddou, Hamid

    2013-01-01

    In this paper, we report the direct chemical synthesis of silicon sheets in gram-scale quantities by chemical exfoliation of pre-processed calcium di-silicide (CaSi2). We have used a combination of X-ray photoelectron spectroscopy, transmission electron microscopy and Energy-dispersive X-ray spectroscopy to characterize the obtained silicon sheets. We found that the clean and crystalline silicon sheets show a 2-dimensional hexagonal graphitic structure.

  17. Atmospheric pressure chemical vapour deposition of vanadium arsenide thin films via the reaction of VCl4 or VOCl3 with tBuAsH2

    International Nuclear Information System (INIS)

    Thin films of vanadium arsenide were deposited via the dual-source atmospheric pressure chemical vapour deposition reactions of VCl4 or VOCl3 with tBuAsH2. Using the vanadium precursor VCl4, films were deposited at substrate temperatures of 550–600 °C, which were black-gold in appearance and were found to be metal-rich with high levels of chlorine incorporation. The use of VOCl3 as the vanadium source resulted in films being deposited between 450 and 600 °C and, unlike when using VCl4, were silver in appearance. The films deposited using VOCl3 demonstrated vanadium to arsenic ratios close to 1:1, and negligible chlorine incorporation. Films deposited using either vanadium precursor were identified as VAs using powder X-ray diffraction and possessed borderline metallic/semiconductor resistivities. - Highlights: • Formation of VAs films via atmospheric pressure chemical vapour deposition. • Films formed using VCl4 or VOCl3 and tBuAsH2. • Powder X-ray diffraction showed that crystalline VAs films were deposited. • Films from VOCl3 had a V:As ratio close to 1 with negligible Cl incorporation. • Films were silver and possessed borderline metallic/semiconductor resistivities

  18. Sensitive chemical compass assisted by quantum criticality

    Science.gov (United States)

    Cai, C. Y.; Ai, Qing; Quan, H. T.; Sun, C. P.

    2012-02-01

    A radical-pair-based chemical reaction might be used by birds for navigation via the geomagnetic direction. The inherent physical mechanism is that the quantum coherent transition from a singlet state to triplet states of the radical pair could respond to a weak magnetic field and be sensitive to the direction of such a field; this then results in different photopigments to be sensed by the avian eyes. Here, we propose a quantum bionic setup, inspired by the avian compass, as an ultrasensitive probe of a weak magnetic field based on the quantum phase transition of the environments of the two electrons in the radical pair. We prove that the yield of the chemical products via recombination from the singlet state is determined by the Loschmidt echo of the environments with interacting nuclear spins. Thus quantum criticality of environments could enhance the sensitivity of detection of weak magnetic fields.

  19. Sensitive Chemical Compass Assisted by Quantum Criticality

    CERN Document Server

    Cai, C Y; Quan, H T; Sun, C P

    2011-01-01

    The radical-pair-based chemical reaction could be used by birds for the navigation via the geomagnetic direction. An inherent physical mechanism is that the quantum coherent transition from a singlet state to triplet states of the radical pair could response to the weak magnetic field and be sensitive to the direction of such a field and then results in different photopigments in the avian eyes to be sensed. Here, we propose a quantum bionic setup for the ultra-sensitive probe of a weak magnetic field based on the quantum phase transition of the environments of the two electrons in the radical pair. We prove that the yield of the chemical products via the recombination from the singlet state is determined by the Loschmidt echo of the environments with interacting nuclear spins. Thus quantum criticality of environments could enhance the sensitivity of the detection of the weak magnetic field.

  20. Networks of ultra-fine Ag nanocrystals in a Teflon AF (registered) matrix by vapour phase e-beam-assisted deposition

    International Nuclear Information System (INIS)

    We have fabricated nanocomposite thin films comprising silver (Ag) nanoparticles dispersed in a Teflon AF (registered) polymer matrix using electron-beam-assisted physical vapour deposition. Four different Ag nanoparticle volume fillings (20%, 35%, 70% and 75%) were achieved by varying the relative metal-polymer evaporation rates with the formation of highly crystalline Ag nanoparticles regardless of the filling ratio. The present fabrication technique allowed full control over dispersion uniformity of nanoparticles in the polymer network. At 20% and 35% metal volume fillings, the nanocomposite film morphology consists of a uniformly dispersed assembly of equiaxed isolated Ag nanoparticles. At higher metal volume fractions the nanocomposite structures displayed two different and unique Ag nanoparticle arrangements within the polymer matrix. In particular, at 70% metal filling, the formation of irregularly shaped clusters of individually assembled nanocrystals was observed. At a slightly higher volume filling (75%), larger irregularly shaped Ag nanocrystals that appeared to be the result of coalescence and grain growth were observed. Finally, a composite theory developed by Tandon and Weng was used to estimate various elastic properties of the nanocomposite films. At high metal filling, the reinforcing effect of the Ag nanoparticles was reflected as approximately a sixfold increase in the elastic modulus compared to the virgin polymer film. Possible applications of such ultra-fine metal nanoparticles networks are discussed

  1. Characterisation of Pristine and Recoated electron beam evaporation plasma-assisted physical vapour deposition Cr-N coatings on AISI M2 steel and WC-Co substrates

    International Nuclear Information System (INIS)

    This paper is focussed on the characterisation of electron beam evaporation plasma-assisted physical vapour deposition Cr-N coatings deposited on AISI M2 steel and hardmetal (K10) substrates in two different conditions: Pristine (i.e., coated) and Recoated (i.e., stripped and recoated). Analytical methods, including X-ray diffraction (XRD), scanning electron microscopy, scratch adhesion and pin-on-disc tests were used to evaluate several coating properties. XRD analyses indicated that both Pristine and Recoated coatings consisted of a mixture of hexagonal Cr2N and cubic CrN, regardless of substrate type. For the M2 steel substrate, only small differences were found in terms of coating phases, microstructure, adhesion, friction and wear coefficients between Pristine and Recoated. Recoated on WC-Co (K10) exhibited a less dense microstructure and significant inferior adhesion compared to Pristine on WC-Co (K10). The wear coefficient of Recoated on WC-Co was 100 times higher than those exhibited by all other specimens. The results obtained confirm that the stripping process did not adversely affect the Cr-N properties when this coating was deposited onto M2 steel substrates, but it is clear from the unsatisfactory tribological performance of Recoated on WC-Co that the stripping process is unsuitable for hardmetal substrates

  2. Low pressure chemical vapour deposition of ZnO layers for thin-film solar cells. Temperature-induced morphological changes

    Energy Technology Data Exchange (ETDEWEB)

    Fay, S.; Kroll, U.; Bucher, C.; Vallat-Sauvain, E.; Shah, A. [Institut de Microtechnique IMT, Thin-film Silicon and Photovoltaics Laboratory, Rue A.-L. Breguet 2, 2000 Neuchatel (Switzerland)

    2005-03-31

    Zinc oxide (ZnO) is now often used as a transparent conductive oxide for contacts in thin-film silicon solar cells. This paper presents a study of ZnO material deposited by the low-pressure chemical vapour deposition technique, in a pressure range below the pressures usually applied for the deposition of this kind of material. A temperature series has been deposited, showing a morphological transition around 150{sup o}C. ZnO samples deposited with temperatures just higher than this transition are constituted of large grains highly oriented along a single crystallographic orientation. These 'monocrystals' lead to low resistivity values, showing a clear correlation between the size of the surface grains and the electrical performance of corresponding films. Additionally, these large grains also yield ZnO layers with high transparency and high light-scattering power, specially suitable for solar cell technology based on thin-film silicon.

  3. Influence of double AlN buffer layers on the qualities of GaN films prepared by metal-organic chemical vapour deposition

    Institute of Scientific and Technical Information of China (English)

    Lin Zhi-Yu; Hao Yue; Zhang Jin-Cheng; Zhou Hao; Li Xiao-Gang; Meng Fan-Na; Zhang Lin-Xia; Ai Shan; Xu Sheng-Rui; Zhao Yi

    2012-01-01

    In this paper we report that the GaN thin film is grown by metal-organic chemical vapour deposition on a sapphire (0001) substrate with double AlN buffer layers.The buffer layer consists of a low-temperature (LT) AlN layer and a high-temperature (HT) AlN layer that are grown at 600 ℃ and 1000 ℃,respectively.It is observed that the thickness of the LT-AlN layer drastically influences the quality of GaN thin film,and that the optimized 4.25-min-LT-AlN layer minimizes the dislocation density of GaN thin film.The reason for the improved properties is discussed in this paper.

  4. Ellipsometric and Rutherford Back scattering Spectrometry studies of SiO(X)N(Y) films elaborated by plasma-enhanced chemical vapour deposition technique.

    Science.gov (United States)

    Mahamdi, R; Boulesbaa, M; Saci, L; Mansour, F; Molliet, C; Collet, M; Temple-Boyer, P

    2011-10-01

    Silicon oxynitride (SiO(X)N(Y)) thin films were deposited by plasma-enhanced chemical vapour deposition technique (PECVD) from silane (SiH4), nitrous oxide (N2O), ammonia (NH3) and nitrogen (N2) mixture. Spectroscopic ellipsometry (SE), in the range of wavelengths 450-900 nm, was used to define the film thickness and therefore the deposition rate, as well as the refractive index as a function of the N2O gaseous flow. While considering the (Si3N4, SiO2, H2 or void) heterogeneous mixture, Maxwell Garnett (MG) theory allows to fit the SE measurements and to define the volume fraction of the different phases. Finally, Rutherford Backscattering Spectrometry (RBS) results showed that x = O/Si ratio increases gradually with increasing the N2O flow, allowing the correlation of the SiO(X)N(Y) films main parameters. PMID:22400311

  5. An investigation into the optimum thickness of titanium dioxide thin films synthesized by using atmospheric pressure chemical vapour deposition for use in photocatalytic water oxidation.

    Science.gov (United States)

    Hyett, Geoffrey; Darr, Jawwad A; Mills, Andrew; Parkin, Ivan P

    2010-09-10

    Twenty eight films of titanium dioxide of varying thickness were synthesised by using atmospheric pressure chemical vapour deposition (CVD) of titanium(IV) chloride and ethyl acetate onto glass and titanium substrates. Fixed reaction conditions at a substrate temperature of 660 °C were used for all depositions, with varying deposition times of 5-60 seconds used to control the thickness of the samples. A sacrificial electron acceptor system composed of alkaline sodium persulfate was used to determine the rate at which these films could photo-oxidise water in the presence of 365 nm light. The results of this work showed that the optimum thickness for CVD films on titanium substrates for the purposes of water oxidation was ≈200 nm, and that a platinum coating on the reverse of such samples leads to a five-fold increase in the observed rate of water oxidation. PMID:20645333

  6. Growth of beta barium borate (β-BaB2O4) thin films by injection metal organic chemical vapour deposition

    International Nuclear Information System (INIS)

    Thin films containing beta barium borate (β-BaB2O4 so called β-BBO) were grown on silicon (100) substrates by injection metal organic chemical vapour deposition for different deposition temperatures. The films were characterized by optical microscopy, micro-Raman spectroscopy and X-ray photoelectron Spectroscopy (XPS). The micro-Raman spectra show an intense peak at 637 cm-1 that is the fingerprint of β-BBO. Our XPS analysis permits the measurement of the Ba, B and O core levels, which are reported here for the first time for β-BBO thin films. The formation of a new spectral component appearing with lower growth temperatures has been observed as well

  7. Effect of Al Doping in the InGaN/GaN Multiple Quantum Well Light Emitting Diodes Grown by Metalorganic Chemical Vapour Deposition

    Institute of Scientific and Technical Information of China (English)

    LU Yu; YANG Zhi-Jian; PAN Yao-Bo; XU Ke; HU Xiao-Dong; ZHANG Bei; ZHANG Guo-Yi

    2006-01-01

    The effect of Al doping in the GaN layer of InGaN/GaN multiple quantum-well light emitting diodes (LEDs) grown by metalorganic chemical vapour deposition is investigated by using photoluminescence (PL) and high-resolution x-ray diffraction. The full width at half maximum of PL of Al doped LEDs is measured to be about 12nm. The band edge photoluminescence emission intensity is enhanced significantly. In addition, the in-plane compressive strain in the Al-doped LEDs is improved significantly and measured by reciprocal space map. The output power of Al-doped LEDs is 130mW in the case of the induced current of 200mA.

  8. The physics of plasma-enhanced chemical vapour deposition for large-area coating: industrial application to flat panel displays and solar cells

    International Nuclear Information System (INIS)

    Designing plasma-enhanced chemical vapour deposition (PECVD) reactors to coat large-area glass plates (∼1 m2) for flat panel display or solar cell manufacturing raises challenging issues in physics and chemistry as well as mechanical, thermal, and electrical engineering, and material science. In such reactive glow discharge plasma slabs, excited at RF frequency (from 13.56 MHz up to ∼100 MHz), the thin-film deposition uniformity is determined by the gas flow distribution, as well as the RF voltage distribution along the electrodes, and by local plasma perturbations at the reactor boundaries. All these aspects can be approached by analytical and numerical modelling. Moreover, the film properties are largely determined by the plasma chemistry involving the neutral radicals contributing to film growth, the effect of ion bombardment, and the formation and trapping of dust triggered by homogeneous nucleation. This paper will review progress in this field, with particular emphasis on modelling developments. (author)

  9. The physics of plasma-enhanced chemical vapour deposition for large-area coating: industrial application to flat panel displays and solar cells

    Energy Technology Data Exchange (ETDEWEB)

    Perrin, Jerome [Unaxis-Balzers A.G., Central R and D, PO Box 1000, FL-9496 Balzers (Liechtenstein); Schmitt, Jacques [Unaxis-France S.A., Display Technology, 5 rue Leon Blum, F-91120, Palaiseau (France); Hollenstein, Christoph; Howling, Alan; Sansonnens, Laurent [Centre de Recherche en Physique des Plasmas, Ecole Polytechnique Federale de Lausanne, PPH Ecublens, CH - 1015 Lausanne (Switzerland)

    2000-12-01

    Designing plasma-enhanced chemical vapour deposition (PECVD) reactors to coat large-area glass plates ({approx}1 m{sup 2}) for flat panel display or solar cell manufacturing raises challenging issues in physics and chemistry as well as mechanical, thermal, and electrical engineering, and material science. In such reactive glow discharge plasma slabs, excited at RF frequency (from 13.56 MHz up to {approx}100 MHz), the thin-film deposition uniformity is determined by the gas flow distribution, as well as the RF voltage distribution along the electrodes, and by local plasma perturbations at the reactor boundaries. All these aspects can be approached by analytical and numerical modelling. Moreover, the film properties are largely determined by the plasma chemistry involving the neutral radicals contributing to film growth, the effect of ion bombardment, and the formation and trapping of dust triggered by homogeneous nucleation. This paper will review progress in this field, with particular emphasis on modelling developments. (author)

  10. Grafting 4f and 3d metal complexes into mesoporous MCM-41 silica by wet impregnation and by chemical vapour infiltration

    International Nuclear Information System (INIS)

    Hybrid organic/inorganic materials have been prepared by reacting mesoporous MCM-41 silica with transition metal β-diketonates, either by wet impregnation (WI) or by chemical vapour infiltration (CVI). Compounds obtained from Eu(III) or Gd(III) β-diketonates, both by wet impregnation and by CVI, contain chemisorbed metalorganic species with strong Si-O-Ln bonding. Compounds prepared (by CVI only) from Cu(II) or Mn(III) β-diketonates show a more complex absorption process than the lanthanides, since upon heating under dynamic vacuum they release part of the absorbed metal complex. Eu(thd)3 was more specifically used to prepare luminescent materials. It was used either alone, or with phenanthroline as an additional ligand in order to promote the so called 'antenna effect'

  11. Modification of electrical properties induced by annealing of ZnO:B thin films deposited by chemical vapour deposition: Kinetic investigation of evolution

    Energy Technology Data Exchange (ETDEWEB)

    David, C., E-mail: Clement.david@univ-poitiers.fr [Inventux Technologies AG, Wolfener Straße 23, 12681 Berlin (Germany); Institut Pprime, Département de Physique et Mécanique des Matériaux, CNRS – Université de Poitiers, F-86962 Futuroscope Chasseneuil Cedex (France); Paumier, F. [Institut Pprime, Département de Physique et Mécanique des Matériaux, CNRS – Université de Poitiers, F-86962 Futuroscope Chasseneuil Cedex (France); Tinkham, B.P. [Inventux Technologies AG, Wolfener Straße 23, 12681 Berlin (Germany); Eyidi, D.; Marteau, M.; Guérin, P.; Girardeau, T. [Institut Pprime, Département de Physique et Mécanique des Matériaux, CNRS – Université de Poitiers, F-86962 Futuroscope Chasseneuil Cedex (France)

    2013-05-15

    In this study temperature dependent Hall effect measurements combined with Fourier Transformed Infra-Red (FTIR) spectroscopy measurements is used to determine the evolution of the scattering mechanisms ascribable to in-grain and grain boundaries on Boron doped ZnO thin films deposited by Low Pressure Chemical Vapour Deposition (LPCVD). Through Hall effect measurements during in situ isothermal annealing, changes in electrical characteristics of zinc oxide could be followed in real time. Whereas only degradation is observed in air, an improvement of layer conductivity could be achieved at low temperatures by annealing under argon atmosphere. A study of the conductivity during isothermal annealing offers the possibility to extract activation energies, which have been compared to migration energies of the different intrinsic defects in ZnO.

  12. Modification of electrical properties induced by annealing of ZnO:B thin films deposited by chemical vapour deposition: Kinetic investigation of evolution

    International Nuclear Information System (INIS)

    In this study temperature dependent Hall effect measurements combined with Fourier Transformed Infra-Red (FTIR) spectroscopy measurements is used to determine the evolution of the scattering mechanisms ascribable to in-grain and grain boundaries on Boron doped ZnO thin films deposited by Low Pressure Chemical Vapour Deposition (LPCVD). Through Hall effect measurements during in situ isothermal annealing, changes in electrical characteristics of zinc oxide could be followed in real time. Whereas only degradation is observed in air, an improvement of layer conductivity could be achieved at low temperatures by annealing under argon atmosphere. A study of the conductivity during isothermal annealing offers the possibility to extract activation energies, which have been compared to migration energies of the different intrinsic defects in ZnO

  13. Investigation of chemical vapour deposition diamond detectors by X- ray micro-beam induced current and X-ray micro-beam induced luminescence techniques

    CERN Document Server

    Olivero, P; Vittone, E; Fizzotti, F; Paolini, C; Lo Giudice, A; Barrett, R; Tucoulou, R

    2004-01-01

    Tracking detectors have become an important ingredient in high-energy physics experiments. In order to survive the harsh detection environment of the Large Hadron Collider (LHC), trackers need to have special properties. They must be radiation hard, provide fast collection of charge, be as thin as possible and remove heat from readout electronics. The unique properties of diamond allow it to fulfill these requirements. In this work we present an investigation of the charge transport and luminescence properties of "detector grade" artificial chemical vapour deposition (CVD) diamond devices developed within the CERN RD42 collaboration, performed by means of X-ray micro-beam induced current collection (XBICC) and X-ray micro- beam induced luminescence (XBIL) techniques. XBICC technique allows quantitative estimates of the transport parameters of the material to be evaluated and mapped with micrometric spatial resolution. In particular, the high resolution and sensitivity of the technique has allowed a quantitati...

  14. Growth of MgB2 Thin Films by Chemical Vapour Deposition Using B2H6 as a boron Source

    Institute of Scientific and Technical Information of China (English)

    王淑芳; 朱亚彬; 刘震; 周岳亮; 张芹; 陈正豪; 吕惠宾; 杨国桢

    2003-01-01

    Superconducting MgB2 thin films were grown on single crystal Al2O3 (0001) by chemical vapour deposition using B2H6 as a boron source. MgB2 film was then accomplished by annealing the boron precursor films in the presence of high-purity magnesium bulk at 890℃ in vacuum. The as-grown MgB2 films are smooth and c-axis-oriented.The films exhibit a zero-resistance transition of about 38K with a narrow transition width of 0.2 K. Magnetic hysteresis measurements yield the critical current density of 1.9 × 107 A/cm2 at 10 K in zero field.

  15. Characterization of thin TiO{sub 2} films prepared by plasma enhanced chemical vapour deposition for optical and photocatalytic applications

    Energy Technology Data Exchange (ETDEWEB)

    Sobczyk-Guzenda, A., E-mail: asobczyk@p.lodz.p [Institute of Materials Science and Engineering, Technical University of Lodz, Stefanowskiego 1, 90-924 Lodz (Poland); Gazicki-Lipman, M.; Szymanowski, H.; Kowalski, J. [Institute of Materials Science and Engineering, Technical University of Lodz, Stefanowskiego 1, 90-924 Lodz (Poland); Wojciechowski, P.; Halamus, T. [Department of Molecular Physics, Technical University of Lodz, Stefanowskiego 1, 90-924 Lodz (Poland); Tracz, A. [Centre for Molecular and Macromolecular Studies, Polish Academy of Sciences, Sienkiewicza 112, 90-363 Lodz (Poland)

    2009-07-31

    Thin titanium oxide films were deposited using a radio frequency (RF) plasma enhanced chemical vapour deposition method. Their optical properties and thickness were determined by means of ultraviolet-visible absorption spectrophotometry. Films of the optical parameters very close to those of titanium dioxide have been obtained at the high RF power input. Their optical quality is high enough to allow for their use in a construction of stack interference optical filters. At the same time, these materials exhibit strong photocatalytic effects. The results of structural analysis, carried out by Raman Shift Spectroscopy, show that the coatings posses amorphous structure. However, Raman spectra of the same films subjected to thermal annealing at 450 {sup o}C disclose an appearance of a crystalline form, namely that of anatase. Surface morphology of the films has also been characterized by Atomic Force Microscopy revealing granular, broccoli-like topography of the films.

  16. Study of a new hybrid process combining slurry infiltration and Reactive Chemical Vapour Infiltration for the realisation of Ceramic Matrix Composites

    International Nuclear Information System (INIS)

    Ceramic matrix composites were originally developed for aerospace,military aeronautics or energy applications thanks to their good properties at high temperature. They are generally made by Chemical Vapor Infiltration (CVI). A new short hybrid process combining fiber preform slurry impregnation of ceramic powders with an innovative Reactive CVI (RCVI) route is proposed to reduce the production time. This route is based on the combination of Reactive Chemical Vapour Deposition (RCVD), which is often used to deposit coatings on fibres, with the Chemical Vapor Infiltration (CVI).In RCVD, the absence of one element of the deposited carbide in the initial gas phase involves the consumption/conversion of the solid substrate. In this work, the RCVD growth and the associated consumption were studied with different parameters in the Ti-H-Cl-C chemical system. The study has been completed with the chemical products analysis, combining XRD, XPS and FTIR. Then, the partial conversion of sub-micrometer carbon powders into titanium carbide and the consolidation of green bodies by RCVI from H2/TiCl4 gaseous infiltration were studied. The residual porosity and the final TiC content were measured in the bulk of the infiltrated powders by image analysis from scanning electron microscopy. Depending on temperature, few hundred micrometers-depth infiltrations are obtained.Finally, the results have been transposed to the RCVI into CMC-type pre-forms. Despite a minimal TiC content of 25% in the overall preform, the results shown a bad homogeneity of the infiltration and a poor cohesion of fibres with RCVI consolidated powder of their environment. (author)

  17. Advantages and limitations of employment of high resolution continuum source AAS as detector of chemical generated metallic vapours

    International Nuclear Information System (INIS)

    Complete text of publication follows. A method was developed to determine metals after vapour generation, atomization in a heated quartz tube and detection using High Resolution Continuum Source AAS (ContrAA 300R equipment, Analytic Jena, Germany). High resolution continuum source AAS allows sequential analysis of elements with detection limits a factor of five better than those of Line Source AAS. This fact is due to the combined use of higher radiation intensity xenon continuum source, a high resolution monochromator and a CCD array detector. Moreover, important advantages of this technique were relatively low cost, possibility to visualize molecular absorption lines (mainly diatomic species). Modifications on the HS60 (Analytic Jena, Germany) vapor generation system were performed. The system includes three peristaltic pumps, a three channel and a one channel, controlled by software and a external peristaltic pump. Flow rates were selected from the three permitted velocities, in order to provide maximum sensitivity and an adequate operation in the gas-liquid separator. A home-made glass hydrostatic gas-liquid separator was used. A 140 cm length PTFE tube and a small piece of PharmedR tube were included to transfer vapors from the gas-liquid separator to the quartz cell. Regarding the Ar carrier flow, it must be pointed out that ContrAA 300R equipment only has three options for this parameter (6, 25, and 31 L h-1), and this is a difficulty to study possible effects on the liberation of vapors from the aqueous phase or their concentration in the quartz tube. Optimum conditions for the sequential determination of Ag, Cd, Cu, Co, Ni and Zn were obtained and technical limitations of the system are examined. Calibration curves were lineal (r = 0.995 or higher). Method is precise (RSD <10%) and with LODs lower than 20 g/L for studied elements except for Ni and Co. The authors kindly acknowledge the financial support from Xunta de Galicia (ref. PGIDIT07PXIB209034PR).

  18. Optical and passivating properties of hydrogenated amorphous silicon nitride deposited by plasma enhanced chemical vapour deposition for application on silicon solar cells

    Energy Technology Data Exchange (ETDEWEB)

    Wight, Daniel Nilsen

    2008-07-01

    Within this thesis, several important subjects related to the use of amorphous silicon nitride made by plasma enhanced chemical vapour deposition as an anti-reflective coating on silicon solar cells are presented. The first part of the thesis covers optical simulations to optimise single and double layer anti-reflective coatings with respect to optical performance when situated on a silicon solar cell. The second part investigates the relationship between important physical properties of silicon nitride films when deposited under different conditions. The optical simulations were either based on minimising the reflectance off a silicon nitride/silicon wafer stack or maximising the transmittance through the silicon nitride into the silicon wafer. The former method allowed consideration of the reflectance off the back surface of the wafer, which occurs typically at wavelengths above 1000 nm due to the transparency of silicon at these wavelengths. However, this method does not take into consideration the absorption occurring in the silicon nitride, which is negligible at low refractive indexes but quite significant when the refractive index increases above 2.1. For high-index silicon nitride films, the latter method is more accurate as it considers both reflectance and absorbance in the film to calculate the transmittance into the Si wafer. Both methods reach similar values for film thickness and refractive index for optimised single layer anti-reflective coatings, due to the negligible absorption occurring in these films. For double layer coatings, though, the reflectance based simulations overestimated the optimum refractive index for the bottom layer, which would have lead to excessive absorption if applied to real anti-reflective coatings. The experimental study on physical properties for silicon nitride films deposited under varying conditions concentrated on the estimation of properties important for its applications, such as optical properties, passivation

  19. Azo dye decolorization assisted by chemical and biogenic sulfide

    Energy Technology Data Exchange (ETDEWEB)

    Prato-Garcia, Dorian [Laboratory for Research on Advanced Processes for Water Treatment, Unidad Académica Juriquilla, Instituto de Ingeniería, Universidad Nacional Autónoma de México, Blvd. Juriquilla 3001, Querétaro 76230 (Mexico); Cervantes, Francisco J. [División de Ciencias Ambientales, Instituto Potosino de Investigación Científica y Tecnológica, Camino a la Presa de San José 2055, San Luis Potosí 78216 (Mexico); Buitrón, Germán, E-mail: gbuitronm@ii.unam.mx [Laboratory for Research on Advanced Processes for Water Treatment, Unidad Académica Juriquilla, Instituto de Ingeniería, Universidad Nacional Autónoma de México, Blvd. Juriquilla 3001, Querétaro 76230 (Mexico)

    2013-04-15

    Highlights: ► Azo dyes were reduced efficiently by chemical and biogenic sulfide. ► Biogenic sulfide was more efficient than chemical sulfide. ► There was no competition between dyes and sulfate for reducing equivalents. ► Aromatic amines barely affected the sulfate-reducing process. -- Abstract: The effectiveness of chemical and biogenic sulfide in decolorizing three sulfonated azo dyes and the robustness of a sulfate-reducing process for simultaneous decolorization and sulfate removal were evaluated. The results demonstrated that decolorization of azo dyes assisted by chemical sulfide and anthraquinone-2,6-disulfonate (AQDS) was effective. In the absence of AQDS, biogenic sulfide was more efficient than chemical sulfide for decolorizing the azo dyes. The performance of sulfate-reducing bacteria in attached-growth sequencing batch reactors suggested the absence of competition between the studied azo dyes and the sulfate-reducing process for the reducing equivalents. Additionally, the presence of chemical reduction by-products had an almost negligible effect on the sulfate removal rate, which was nearly constant (94%) after azo dye injection.

  20. Azo dye decolorization assisted by chemical and biogenic sulfide

    International Nuclear Information System (INIS)

    Highlights: ► Azo dyes were reduced efficiently by chemical and biogenic sulfide. ► Biogenic sulfide was more efficient than chemical sulfide. ► There was no competition between dyes and sulfate for reducing equivalents. ► Aromatic amines barely affected the sulfate-reducing process. -- Abstract: The effectiveness of chemical and biogenic sulfide in decolorizing three sulfonated azo dyes and the robustness of a sulfate-reducing process for simultaneous decolorization and sulfate removal were evaluated. The results demonstrated that decolorization of azo dyes assisted by chemical sulfide and anthraquinone-2,6-disulfonate (AQDS) was effective. In the absence of AQDS, biogenic sulfide was more efficient than chemical sulfide for decolorizing the azo dyes. The performance of sulfate-reducing bacteria in attached-growth sequencing batch reactors suggested the absence of competition between the studied azo dyes and the sulfate-reducing process for the reducing equivalents. Additionally, the presence of chemical reduction by-products had an almost negligible effect on the sulfate removal rate, which was nearly constant (94%) after azo dye injection

  1. Study on microwave assisted process in chemical extraction

    International Nuclear Information System (INIS)

    The microwave assisted process is a revolutionary method of extraction that reduces the extraction time to as little as a few seconds, with up to a ten-fold decrease in the use of solvents. The target material is immersed in solvent that is transparent to microwaves, so only the target material is heated, and because of the microwaves tend to heat the inside of the material quickly, the target chemical are expelled in a few seconds. benefits from this process include significant reductions in the amount of energy required and substantial reductions in the cost and dispose of hazardous solvents. A thorough review has been displayed on: using the microwave in extraction, applications of microwave in industry, process flow diagram, mechanism of the process and comparison between microwave process and other extraction techniques (soxhlet, steam distillation and supercritical fluid). This review attempts to summarize the studies about microwave assisted process as a very promising technique. (Author)

  2. Chemically assisted ion beam etching of polycrystalline and (100)tungsten

    Science.gov (United States)

    Garner, Charles

    1987-01-01

    A chemically assisted ion-beam etching technique is described which employs an ion beam from an electron-bombardment ion source and a directed flux of ClF3 neutrals. This technique enables the etching of tungsten foils and films in excess of 40 microns thick with good anisotropy and pattern definition over areas of 30 sq mm, and with a high degree of selectivity. (100) tungsten foils etched with this process exhibit preferred-orientation etching, while polycrystalline tungsten films exhibit high etch rates. This technique can be used to pattern the dispenser cathode surfaces serving as electron emitters in traveling-wave tubes to a controlled porosity.

  3. ZT thin films produced by metal organic-chemical vapour deposition to be used as high-k dielectrics

    International Nuclear Information System (INIS)

    In this work the synthesis and characterisation of ZrxTi1-xO2 (ZT) grown via a non conventional MOCVD apparatus on both silicon and platinum coated substrates are described. The samples have been chemically, morphologically and structurally characterised by AFM, XRD, SEM + FEG and XPS. Also high and low frequencies electrical characterisation has been performed to evaluate a possible application of such materials as high-k dielectrics

  4. Fabrication of 160-nm T-gate metamorphic AlInAs/GaInAs HEMTs on GaAs substrates by metal organic chemical vapour deposition

    Science.gov (United States)

    Li, Hai-Ou; Huang, Wei; Tang Chak, Wah; Deng, Xiao-Fang; Lau Kei, May

    2011-06-01

    The fabrication and performance of 160-nm gate-length metamorphic AlInAs/GaInAs high electron mobility transistors (mHEMTs) grown on GaAs substrate by metal organic chemical vapour deposition (MOCVD) are reported. By using a novel combined optical and e-beam photolithography technology, submicron mHEMTs devices have been achieved. The devices exhibit good DC and RF performance. The maximum current density was 817 mA/mm and the maximum transconductance was 828 mS/mm. The non-alloyed Ohmic contact resistance Rc was as low as 0.02 Ω-mm. The unity current gain cut-off frequency (fT) and the maximum oscillation frequency (fmax) were 146 GHz and 189 GHz, respectively. This device has the highest fT yet reported for a 160-nm gate-length HEMTs grown by MOCVD. The output conductance is 28.9 mS/mm, which results in a large voltage gain of 28.6. Also, an input capacitance to gate-drain feedback capacitance ratio, Cgs/Cgd, of 4.3 is obtained in the device.

  5. Fabrication of 160-nm T-gate metamorphic AlInAs/GaInAs HEMTs on GaAs substrates by metal organic chemical vapour deposition

    International Nuclear Information System (INIS)

    The fabrication and performance of 160-nm gate-length metamorphic AlInAs/GaInAs high electron mobility transistors (mHEMTs) grown on GaAs substrate by metal organic chemical vapour deposition (MOCVD) are reported. By using a novel combined optical and e-beam photolithography technology, submicron mHEMTs devices have been achieved. The devices exhibit good DC and RF performance. The maximum current density was 817 mA/mm and the maximum transconductance was 828 mS/mm. The non-alloyed Ohmic contact resistance Rc was as low as 0.02 Ω-mm. The unity current gain cut-off frequency (fT) and the maximum oscillation frequency (fmax) were 146 GHz and 189 GHz, respectively. This device has the highest fT yet reported for a 160-nm gate-length HEMTs grown by MOCVD. The output conductance is 28.9 mS/mm, which results in a large voltage gain of 28.6. Also, an input capacitance to gate-drain feedback capacitance ratio, Cgs/Cgd, of 4.3 is obtained in the device. (interdisciplinary physics and related areas of science and technology)

  6. Effect of Postdeposition Heat Treatment on the Crystallinity, Size, and Photocatalytic Activity of TiO2 Nanoparticles Produced via Chemical Vapour Deposition

    Directory of Open Access Journals (Sweden)

    Siti Hajar Othman

    2010-01-01

    Full Text Available Titanium dioxide (TiO2 nanoparticles were produced using chemical vapour deposition (CVD at different deposition temperatures (300–700°C. All the samples were heat treated at their respective deposition temperatures and at a fixed temperature of 400°C. A scanning electron microscope (SEM, a transmission electron microscope (TEM, and X-ray diffraction (XRD were used to characterize the nanoparticles in terms of size and crystallinity. The photocatalytic activity was investigated via degradation of methylene blue under UV light. The effects of post deposition heat treatment are discussed in terms of crystallinity, nanoparticle size as well as photocatalytic activity. Crystallinity was found to have a much larger impact on photocatalytic activity compared to nanoparticle size. Samples having a higher degree of crystallinity were more photocatalytically active despite being relatively larger in size. Surprisingly, the photocatalytic activity of the samples reduced when heat treated at temperatures lower than the deposition temperature despite showing an improvement in crystallinity.

  7. Polyethylene Oxide Films Polymerized by Radio Frequency Plasma-Enhanced Chemical Vapour Phase Deposition and Its Adsorption Behaviour of Platelet-Rich Plasma

    Institute of Scientific and Technical Information of China (English)

    HU Wen-Juan; XIE Fen-Yan; CHEN Qiang; WENG Jing

    2008-01-01

    We present polyethylene oxide (PEO) functional films polymerized by rf plasma-enhanced vapour chemical deposition (rf-PECVD) on p-Si (100) surface with precursor ethylene glycol dimethyl ether (EGDME) and diluted Ar in pulsed plasma mode. The influences of discharge parameters on the film properties and compounds are investigated. The film structure is analysed by Fourier transform infrared (FTIR) spectroscopy. The water contact angle measurement and atomic force microscope (AFM) are employed to examine the surface polarity and to detect surface morphology, respectively. It is concluded that the smaller duty cycle in pulsed plasma mode contributes to the rich C-O-C (EO) group on the surfaces. As an application, the adsorption behaviour of platelet-rich plasma on plasma polymerization films performed in-vitro is explored. The shapes of attached cells are studied in detail by an optic invert microscope, which clarifies that high-density C-O-C groups on surfaces are responsible for non-fouling adsorption behaviour of the PEO films.

  8. A Simple Route of Morphology Control and Structural and Optical Properties of ZnO Grown by Metal-Organic Chemical Vapour Deposition

    Institute of Scientific and Technical Information of China (English)

    FAN Hai-Bo; YANG Shao-Yan; ZHANG Pan-Feng; WEI Hong-Yuan; LIU Xiang-Lin; JIAO Chun-Mei; ZHU Qin-Sheng; CHEN Yong-Hai; WANG Zhan-Guo

    2008-01-01

    @@ Employing the metal-organic chemical vapour deposition (MOCVD) technique, we prepare ZnO samples with different morphologies from the film to nanorods through conveniently changing the bubbled diethylzinc flux (BDF) and the carrier gas flux of oxygen (OCGF). The scanning electron microscope images indicate that small BDF and OCGF induce two-dimensional growth while the large ones avail quasi-one-dimensional growth. X-ray diffraction (XRD) and Raman scattering analyses show that all of the morphology-dependent ZnO samples are of high crystal quality with a c-axis orientation. From the precise shifts of the 20 locations of ZnO (002) face in the XRD patterns and the E2 (high) locations in the Raman spectra, we deduce that the compressive stress forms in the ZnO samples and is strengthened with the increasing BDF and OCGF. Photoluminescence spectroscopyresults show all the samples have a sharp ultraviolet luminescent band without any defects-related emission.Upon the experiments a possible growth mechanism is proposed.

  9. Effects of Surface Modification of Nanodiamond Particles for Nucleation Enhancement during Its Film Growth by Microwave Plasma Jet Chemical Vapour Deposition Technique

    Directory of Open Access Journals (Sweden)

    Chii-Ruey Lin

    2014-01-01

    Full Text Available The seedings of the substrate with a suspension of nanodiamond particles (NDPs were widely used as nucleation seeds to enhance the growth of nanostructured diamond films. The formation of agglomerates in the suspension of NDPs, however, may have adverse impact on the initial growth period. Therefore, this paper was aimed at the surface modification of the NDPs to enhance the diamond nucleation for the growth of nanocrystalline diamond films which could be used in photovoltaic applications. Hydrogen plasma, thermal, and surfactant treatment techniques were employed to improve the dispersion characteristics of detonation nanodiamond particles in aqueous media. The seeding of silicon substrate was then carried out with an optimized spin-coating method. The results of both Fourier transform infrared spectroscopy and dynamic light scattering measurements demonstrated that plasma treated diamond nanoparticles possessed polar surface functional groups and attained high dispersion in methanol. The nanocrystalline diamond films deposited by microwave plasma jet chemical vapour deposition exhibited extremely fine grain and high smooth surfaces (~6.4 nm rms on the whole film. These results indeed open up a prospect of nanocrystalline diamond films in solar cell applications.

  10. Modified DLC coatings prepared in a large-scale reactor by dual microwave/pulsed-DC plasma-activated chemical vapour deposition

    International Nuclear Information System (INIS)

    Diamond-Like Carbon (DLC) films find abundant applications as hard and protective coatings due to their excellent mechanical and tribological performances. The addition of new elements to the amorphous DLC matrix tunes the properties of this material, leading to an extension of its scope of applications. In order to scale up their production to a large plasma reactor, DLC films modified by silicon and oxygen additions have been grown in an industrial plant of 1m3 by means of pulsed-DC plasma-activated chemical vapour deposition (PACVD). The use of an additional microwave (MW) source has intensified the glow discharge, partly by electron cyclotron resonance (ECR), accelerating therefore the deposition process. Hence, acetylene, tetramethylsilane (TMS) and hexamethyldisiloxane (HMDSO) constituted the respective gas precursors for the deposition of a-C:H (DLC), a-C:H:Si and a-C:H:Si:O films by dual MW/pulsed-DC PACVD. This work presents systematic studies of the deposition rate, hardness, adhesion, abrasive wear and water contact angle aimed to optimize the technological parameters of deposition: gas pressure, relative gas flow of the monomers and input power. This study has been completed with measures of the atomic composition of the samples. Deposition rates around 1 μm/h, typical for standard processes held in the large reactor, were increased about by a factor 10 when the ionization source has been operated in ECR mode

  11. Pengaruh Temperatur, Massa Zink, Substrat Dan Waktu Tahan Terhadap Struktur Dan Morfologi Zno Hasil Sintesis Dengan Metode Chemical Vapour Transport (CVT

    Directory of Open Access Journals (Sweden)

    Arisela Distyawan

    2013-09-01

    Full Text Available Normal 0 false false false MicrosoftInternetExplorer4 Material Zink Oksida (ZnO telah berhasil disintesis menggunakan metode Chemical Vapour Transport dengan bahan dasar prekursor berupa serbuk Zn yang dipanaskan hingga mencapai temperatur uap dalam furnace horisontal. Adapun variasi yang diberikan dalam penelitian adalah berupa temperatur pemanasan (850, 900, dan 950oC, massa prekursor Zn (0,15, 0,25, dan 0,35g, lama waktu sputtering substrat (90 dan 180 detik, dan waktu tahan khusus untuk mengetahui initial growth ZnO (10, 20, 30, 40, 50, dan 60 menit. Pembentukan Zink Oksida (ZnO dikonfirmasi melalui data X-RD, dimana telah terbentuk material ZnO dengan struktur hexagonal wurtzite. Berdarsarkan data XRD juga diketahui ukuran kristal pada sampel sputtering 90 detik mengalami penurunan bersamaan penambahan massa Zn. Dari hasil pengamatan SEM didapatkan bahwa morfologi permukaan lapisan tipis ZnO terdiri dari berbagai macam bentuk berupa nanoparticle, nanowires, nanorods, dan nanotetrapod. Lapisan Zno paling tebal sebesar ±350 nm pada sampel 950oC-0,15g sputter 90 detik. Semakin tinggi temperatur operasi berdampak peningkatan ukuran partikel. Pengujian FTIR turut menguatkan terbentuknya lapisan tipis di permukaan substrat Alumina. Hal ini didasarkan terjadinya penyerapan vibrasi yang membentuk lekukan pada kisaran area 509 cm-1 dari masing-masing sampel.

  12. Structural and optical investigation of nonpolar a-plane GaN grown by metal-organic chemical vapour deposition on r-plane sapphire by neutron irradiation

    Institute of Scientific and Technical Information of China (English)

    Xu Sheng-Rui; Zhang Jin-Feng; Gu Wen-Ping; Hao Yue; Zhang Jin-Cheng; Zhou Xiao-Wei; Lin Zhi-Yu; Mao Wei

    2012-01-01

    Nonpolar (11(2)0) a-plane GaN films are grown by metal-organic chemical vapour deposition (MOCVD) on r-plane (1(1)02) sapphire.The samples are irradiated with neutrons under a dose of 1 × 1015 cm-2.The surface morphology,the crystal defects and the optical properties of the samples before and after irradiation are analysed using atomic force microscopy (AFM),high resolution X-ray diffraction (HRXRD) and photoluminescence (PL).The AFM result shows deteriorated sample surface after the irradiation.Careful fitting of the XRD rocking curve is carried out to obtain the Lorentzian weight fraction.Broadening due to Lorentzian type is more obvious in the as-grown sample compared with that of the irradiated sample,indicating that more point defects appear in the irradiated sample.The variations of line width and intensity of the PL band edge emission peak are consistent with the XRD results.The activation energy decreases from 82.5 meV to 29.9 meV after irradiation by neutron.

  13. Effect of oxygen plasma on field emission characteristics of single-wall carbon nanotubes grown by plasma enhanced chemical vapour deposition system

    Energy Technology Data Exchange (ETDEWEB)

    Kumar, Avshish; Parveen, Shama; Husain, Samina; Ali, Javid; Zulfequar, Mohammad [Department of Physics, Jamia Millia Islamia (A Central University), New Delhi 110025 (India); Harsh [Centre for Nanoscience and Nanotechnology, Jamia Millia Islamia, New Delhi 110025 (India); Husain, Mushahid, E-mail: mush-reslab@rediffmail.com [Department of Physics, Jamia Millia Islamia (A Central University), New Delhi 110025 (India); Centre for Nanoscience and Nanotechnology, Jamia Millia Islamia, New Delhi 110025 (India)

    2014-02-28

    Field emission properties of single wall carbon nanotubes (SWCNTs) grown on iron catalyst film by plasma enhanced chemical vapour deposition system were studied in diode configuration. The results were analysed in the framework of Fowler-Nordheim theory. The grown SWCNTs were found to be excellent field emitters, having emission current density higher than 20 mA/cm{sup 2} at a turn-on field of 1.3 V/μm. The as grown SWCNTs were further treated with Oxygen (O{sub 2}) plasma for 5 min and again field emission characteristics were measured. The O{sub 2} plasma treated SWCNTs have shown dramatic improvement in their field emission properties with emission current density of 111 mA/cm{sup 2} at a much lower turn on field of 0.8 V/μm. The as grown as well as plasma treated SWCNTs were also characterized by various techniques, such as scanning electron microscopy, high resolution transmission electron microscopy, Raman spectroscopy, and Fourier transform infrared spectroscopy before and after O{sub 2} plasma treatment and the findings are being reported in this paper.

  14. Fabrication of 160-nm T-gate metamorphic AlInAs/GaInAs HEMTs on GaAs substrates by metal organic chemical vapour deposition

    Institute of Scientific and Technical Information of China (English)

    Li Hai-Ou; Huang Wei; Tang Chak Wah; Deng Xiao-Fang; Lau Kei May

    2011-01-01

    The fabrication and performance of 160-nm gate-length metamorphic AlInAs/GaInAs high electron mobility transistors (mHEMTs) grown on GaAs substrate by metal organic chemical vapour deposition (MOCVD) are reported.By using a novel combined optical and e-beam photolithography technology, submicron mHEMTs devices have been achieved. The devices exhibit good DC and RF performance. The maximum current density was 817 mA/mm and the maximum transconductance was 828 mS/mm. The non-alloyed Ohmic contact resistance Rc was as low as 0.02 Ω-mm. The unity current gain cut-off frequency (fT) and the maximum oscillation frequency (fmax) were 146 GHz and 189 GHz, respectively. This device has the highest fT yet reported for a 160-nm gate-length HEMTs grown by MOCVD.The output conductance is 28.9 mS/mm, which results in a large voltage gain of 28.6. Also, an input capacitance to gate-drain feedback capacitance ratio, Cgs/Cgd, of 4.3 is obtained in the device.

  15. Growth and characterization of germanium epitaxial film on silicon (001 with germane precursor in metal organic chemical vapour deposition (MOCVD chamber

    Directory of Open Access Journals (Sweden)

    Kwang Hong Lee

    2013-09-01

    Full Text Available The quality of germanium (Ge epitaxial film grown directly on a silicon (Si (001 substrate with 6° off-cut using conventional germane precursor in a metal organic chemical vapour deposition (MOCVD system is studied. The growth sequence consists of several steps at low temperature (LT at 400 °C, intermediate temperature ramp (LT-HT of ∼10 °C/min and high temperature (HT at 600 °C. This is followed by post-growth annealing in hydrogen at temperature ranging from 650 to 825 °C. The Ge epitaxial film of thickness ∼ 1 μm experiences thermally induced tensile strain of 0.11 % with a treading dislocation density (TDD of ∼107/cm2 and the root-mean-square (RMS roughness of ∼ 0.75 nm. The benefit of growing Ge epitaxial film using MOCVD is that the subsequent III-V materials can be grown in-situ without the need of breaking the vacuum hence it is manufacturing worthy.

  16. A chemical assessment of the suitability of allyl- iso-propyltelluride as a Te precursor for metal organic vapour phase epitaxy

    Science.gov (United States)

    Hails, Janet E.; Cole-Hamilton, David J.; Stevenson, John; Bell, William; Foster, Douglas F.; Ellis, David

    2001-04-01

    The chemical studies, which led to the testing of allyl- iso-propyltelluride (allylTePr i) as a Te precursor in metal organic vapour phase epitaxy are presented. The pyrolysis in hydrogen of allylTePr i gave products including 1,5-hexadiene, propane and propene. Co-pyrolysis of dimethylcadmium (Me 2Cd) and allylTePr i gave the hydrocarbons expected from the pyrolysis of the individual precursors plus additional hydrocarbons including 2-methylpropane and 1-butene. Plots of percentage decomposition versus temperature, which proved extremely useful in determining the likely growth temperatures for both CdTe and HgTe, showed that allylTePr i is less stable than both Pr 2iTe (di- iso-propyltelluride) and Me 2Cd. The possible role of Hg in the growth of CdTe is also discussed. The chemistry of allylTePr i is well suited for use as an efficient precursor for epitaxial growth of tellurium containing semiconductors since there is very little formation of other organotellurium compounds on pyrolysis.

  17. Fine-tuning of catalytic tin nanoparticles by the reverse micelle method for direct deposition of silicon nanowires by a plasma-enhanced chemical vapour technique.

    Science.gov (United States)

    Poinern, Gérrard E J; Ng, Yan-Jing; Fawcett, Derek

    2010-12-15

    The reverse micelle method was used for the reduction of a tin (Sn) salt solution to produce metallic Sn nanoparticles ranging from 85 nm to 140 nm in diameter. The reverse micellar system used in this process was hexane-butanol-cetyl trimethylammonium bromide (CTAB). The diameters of the Sn nanoparticles were proportional to the concentration of the aqueous Sn salt solution. Thus, the size of the Sn nanoparticles can easily be controlled, enabling a simple, reproducible mechanism for the growth of silicon nanowires (SiNWs) using plasma-enhanced chemical vapour deposition (PECVD). Both the Sn nanoparticles and silicon nanowires were characterised using field-emission scanning electron microscopy (FE-SEM). Further characterisations of the SiNW's were made using transmission electron microscopy (TEM), atomic force microscopy (AFM) and Raman spectroscopy. In addition, dynamic light scattering (DLS) was used to investigate particle size distributions. This procedure demonstrates an economical route for manufacturing reproducible silicon nanowires using fine-tuned Sn nanoparticles for possible solar cell applications. PMID:20887996

  18. Origin of the 2.45 eV luminescence band observed in ZnO epitaxial layers grown on c-plane sapphire by chemical vapour deposition

    International Nuclear Information System (INIS)

    Zinc oxide epitaxial layers have been grown on c-plane sapphire substrates by the chemical vapour deposition (CVD) technique. A structural study shows (0001)-oriented films with good crystalline quality. The temperature and excitation power dependence of the photoluminescence (PL) characteristics of these layers is studied as a function of various growth parameters, such as the growth temperature, oxygen flow rate and Zn flux, which suggest that the origin of the broad visible luminescence (VL), which peaks at 2.45 eV, is the transition between the conduction band and the Zn vacancy acceptor states. A bound excitonic transition observed at 3.32 eV in low temperature PL has been identified as an exciton bound to the neutral Zn vacancy. Our study also reveals the involvement of two activation processes in the dynamics of VL, which has been explained in terms of the fluctuation of the capture barrier height for the holes trapped in Zn vacancy acceptors. The fluctuation, which might be a result of the inhomogeneous distribution of Zn vacancies, is found to be associated with an average height of 7 and 90 meV, respectively, for the local and global maxima. (paper)

  19. Characterization of GaN/AlGaN epitaxial layers grown by metalorganic chemical vapour deposition for high electron mobility transistor applications

    Indian Academy of Sciences (India)

    Bhubesh Chander Joshi; Manish Mathew; B C Joshi; D Kumar; C Dhanavantri

    2010-01-01

    GaN and AlGaN epitaxial layers are grown by a metalorganic chemical vapour deposition (MOCVD) system. The crystalline quality of these epitaxially grown layers is studied by different characterization techniques. PL measurements indicate band edge emission peak at 363.8 nm and 312 nm for GaN and AlGaN layers respectively. High resolution XRD (HRXRD) peaks show FWHM of 272 and 296 arcsec for the (0 0 0 2) plane of GaN and GaN in GaN/AlGaN respectively. For GaN buffer layer, the Hall mobility is 346 cm2/V-s and carrier concentration is 4.5 × 1016 /cm3. AFM studies on GaN buffer layer show a dislocation density of 2 × 108/cm2 by wet etching in hot phosphoric acid. The refractive indices of GaN buffer layer on sapphire at 633 nm are 2.3544 and 2.1515 for TE and TM modes respectively.

  20. Effect of gas flow rates on the anatase-rutile transformation temperature of nanocrystalline TiO2 synthesised by chemical vapour synthesis.

    Science.gov (United States)

    Ahmad, Md Imteyaz; Bhattacharya, S S; Fasel, Claudia; Hahn, Horst

    2009-09-01

    Of the three crystallographic allotropes of nanocrystalline titania (rutile, anatase and brookite), anatase exhibits the greatest potential for a variety of applications, especially in the area of catalysis and sensors. However, with rutile being thermodynamically the most stable phase, anatase tends to transform into rutile on heating to temperatures in the range of 500 degrees C to 700 degrees C. Efforts made to stabilize the anatase phase at higher temperatures by doping with metal oxides suffer from the problems of having a large amorphous content on synthesis as well as the formation of secondary impurity phases on doping. Recent studies have suggested that the as-synthesised phase composition, crystallite size, initial surface area and processing conditions greatly influence the anatase to rutile transformation temperature. In this study nanocrystalline titania was synthesised in the anatase form bya chemical vapour synthesis (CVS) method using titanium tetra iso-propoxide (TTIP) as a precursor under varying flow rates of oxygen and helium. The anatase to rutile transformation was studied using high temperature X-ray diffraction (HTXRD) and simultaneous thermogravimetric analysis (STA), followed by transmission electron microscopy (TEM). It was demonstrated that the anatase-rutile transformation temperatures were dependent on the oxygen to helium flow rate ratio during CVS and the results are presented and discussed. PMID:19928267

  1. Thermal Modification of a-SiC:H Films Deposited by Plasma Enhanced Chemical Vapour Deposition from CH4+SiH4 Mixtures

    Institute of Scientific and Technical Information of China (English)

    刘玉学; 王宁会; 刘益春; 申德振; 范希武; 李灵燮

    2001-01-01

    The effects of thermal annealing on photoluminescence (PL) and structural properties of a-Si1-xCx :H films deposited by plasma enhanced chemical vapour deposition from CH4+SiH4 mixtures are studied by using infrared, PL and transmittance-reflectance spectra. In a-SiC:H network, high-temperature annealing gives rise to the effusion of hydrogen from strongly bonded hydrogen in SiH, SiH2, (SiH2)n, SiCHn and CHn configurations and the break of weak C-C, Si-Si and C-Si bonds. A structural rearrangement will occur, which causes a significant correlation of the position and intensity of the PL signal with the annealing temperature. The redshift of the PL peak is related to the destruction of the confining power of barriers. However, the PL intensity does not have a significant correlation with the annealing temperature for a C-rich a-SiC:H network, which refers to the formation of π-bond cluster as increasing carbon content. It is indicated that the thermal stability of C-rich a-Si1-xCx:H films is better than that of Si-like a-Si1-xCx :H films.

  2. Corrosion resistance of amorphous hydrogenated SiC and diamond-like coatings deposited by r.f.-plasma-enhanced chemical vapour deposition

    International Nuclear Information System (INIS)

    This paper reports on the properties and corrosion resistance of amorphous hydrogenated carbon and amorphous hydrogenated SiC films deposited by r.f.-plasma-enhanced chemical vapour deposition at low temperatures (below 200 C). SiC coatings were prepared from SiH4-CH4 gas mixtures. Hydrogenated diamond-like coatings were deposited from classical CH4-H2 mixtures. The influence of various deposition parameters was investigated. Microstructural and mechanical properties of the films were studied (density, hydrogen content, nanohardness, internal stress, critical load and friction coefficient). Two examples of corrosion resistance are given: (1) the corrosion resistance and biocompatibility of SiC and diamond-like coatings deposited on metal implants (Ti alloy) (the corrosion resistance is evaluated through potentiodynamic polarization tests in biological media; the biocompatibility of coated and uncoated metals is compared using differentiated human cell cultures); and (2) the corrosion resistance of SiC-coated magnesium in chloride-containing boric borate buffer at pH = 9.3 evaluated from anodic polarization curves and scanning electron microscopy studies. (orig.)

  3. Broadband antireflection for a high-index substrate using SiNx/SiO2 by inductively coupled plasma chemical vapour deposition

    International Nuclear Information System (INIS)

    This paper presents the development of broadband antireflection coating for a high-index substrate such as Si using SiNx/SiO2 by inductively coupled plasma chemical vapour deposition (ICP-CVD). The thin-film design employs a simulated annealing method for a minimal average reflectance over the wavelength range and incidence angles involved, which gives the optimized refractive index and thickness of each layer of the thin-film stack under different layer numbers. Using ICP-CVD, the SiNx material system is optimized by tuning the SiH4/N2 gas ratio. The corresponding thin-film characterization shows the precise refractive index/film thickness control in deposition, and the deposited film also has a low absorption coefficient and smooth surface. The double-layer SiNx/SiO2 coating with the optimized refractive index and thickness for broadband antireflection is demonstrated experimentally. The average reflectance of the Si surface is reduced from ∼32% to ∼3.17% at normal incidence for a wavelength range from 400 to 1100 nm. (paper)

  4. Hot wire chemical vapour deposition (HWCVD) of boron carbide thin films from ortho-carborane for neutron detection application

    International Nuclear Information System (INIS)

    Detection of neutrons is possible if suitable converters such as Li, LiF or 10B in the form of thin films are used along with the semiconductor device. The use of boron (10B) in some host matrix as a neutron detector is attractive due to its large neutron capture cross-section. Boron carbide (BC) films are deposited on silicon substrates by HWCVD technique using solid ortho-carborane (o-C2B10H12) precursor with argon as carrier gas. The films contain 10B required for neutron detection as confirmed by the Secondary Ion Mass Spectroscopy. Variations in its structure as well as the chemical bonding configurations using Fourier Transform Infra-Red, Raman and X-ray diffraction spectroscopy have been studied.

  5. Raman Spectroscopic Study of Carbon Nanotubes Prepared Using Fe/ZnO-Palm Olein-Chemical Vapour Deposition

    Directory of Open Access Journals (Sweden)

    Syazwan Afif Mohd Zobir

    2012-01-01

    Full Text Available Multiwalled carbon nanotubes (MWCNTs were synthesized using Fe/ZnO catalyst by a dual-furnace thermal chemical vapor deposition (CVD method at 800–1000°C using nitrogen gas with a constant flow rate of 150 sccm/min as a gas carrier. Palm olein (PO, ferrocene in the presence of 0.05 M zinc nitrate, and a p-type silicon wafer were used as carbon source, catalyst precursor, and sample target, respectively. D, G, and G′ bands were observed at 1336–1364, 1559–1680, and 2667–2682 cm-1, respectively. Carbon nanotubes (CNTs with the highest degree of crystallinity were obtained at around 8000°C, and the smallest diameter of about 2 nm was deposited on the silicon substrate at 1000°C.

  6. Liquid and vapour-phase antifungal activities of selected essential oils against candida albicans: microscopic observations and chemical characterization of cymbopogon citratus

    OpenAIRE

    Malik Anushree; Tyagi Amit K

    2010-01-01

    Abstract Background Use of essential oils for controlling Candida albicans growth has gained significance due to the resistance acquired by pathogens towards a number of widely-used drugs. The aim of this study was to test the antifungal activity of selected essential oils against Candida albicans in liquid and vapour phase and to determine the chemical composition and mechanism of action of most potent essential oil. Methods Minimum Inhibitory concentration (MIC) of different essential oils ...

  7. Surface transformations of carbon (graphene, graphite, diamond, carbide), deposited on polycrystalline nickel by hot filaments chemical vapour deposition

    International Nuclear Information System (INIS)

    The deposition of carbon has been studied at high temperature on polycrystalline nickel by hot filaments activated chemical vapor deposition (HFCVD). The sequences of carbon deposition are studied by surface analyses: Auger electron spectroscopy (AES), electron loss spectroscopy (ELS), X-ray photoelectron spectroscopy (XPS) in a chamber directly connected to the growth chamber. A general scale law of the (C/Ni) intensity lines is obtained with a reduced time. Both, shape analysis of the AES C KVV line and the C1s relative intensity suggest a three-step process: first formation of graphene and a highly graphitic layer, then multiphase formation with graphitic, carbidic and diamond-like carbon and finally at a critical temperature that strongly depends on the pretreatment of the polycrystalline nickel surface, a rapid transition to diamond island formation. Whatever the substrate diamond is always the final product and some graphene layers the initial product. Moreover it is possible to stabilize a few graphene layers at the initial sequences of carbon deposition. The duration of this stabilization step is strongly depending however on the pre-treatment of the Ni surface.

  8. Waste remediation using in situ magnetically assisted chemical separation

    International Nuclear Information System (INIS)

    The magnetically assisted chemical separation process (MACS) combines the selective and efficient separation afforded by chemical sorption with the magnetic recovery of ferromagnetic particles. This process is being developed for treating the underground storage tanks at Hanford. These waste streams contain cesium, strontium, and transuranics (TRU) that must be removed before this waste can be disposed of as grout. The separation process uses magnetic particles coated with either (1) a selective ion exchange material or an organic extractant containing solvent (for cesium and strontium removal) or (2) solvents for selective separation of TRU elements (e.g., TRUEX process). These coatings, by their chemical nature, selectively separate the contaminants onto the particles, which can then be recovered from the tank using a magnet. Once the particles are removed, the contaminants can either be left on the loaded particles and added to the glass feed slurry or stripped into a small volume of solution so that the extracting particles can be reused. The status of chemistry and separation process is discussed in this paper

  9. The Liquid Vapour Interface

    DEFF Research Database (Denmark)

    Als-Nielsen, Jens Aage

    1985-01-01

    In this short review we are concerned with the density variation across the liquid-vapour interface, i.e. from the bulk density of the liquid to the essentially zero density of the vapour phase. This density variation can in principle be determined from the deviation of the reflectivity from...

  10. A dilute Cu(Ni) alloy for synthesis of large-area Bernal stacked bilayer graphene using atmospheric pressure chemical vapour deposition

    International Nuclear Information System (INIS)

    A bilayer graphene film obtained on copper (Cu) foil is known to have a significant fraction of non-Bernal (AB) stacking and on copper/nickel (Cu/Ni) thin films is known to grow over a large-area with AB stacking. In this study, annealed Cu foils for graphene growth were doped with small concentrations of Ni to obtain dilute Cu(Ni) alloys in which the hydrocarbon decomposition rate of Cu will be enhanced by Ni during synthesis of large-area AB-stacked bilayer graphene using atmospheric pressure chemical vapour deposition. The Ni doped concentration and the Ni homogeneous distribution in Cu foil were confirmed with inductively coupled plasma optical emission spectrometry and proton-induced X-ray emission. An electron backscatter diffraction map showed that Cu foils have a single (001) surface orientation which leads to a uniform growth rate on Cu surface in early stages of graphene growth and also leads to a uniform Ni surface concentration distribution through segregation kinetics. The increase in Ni surface concentration in foils was investigated with time-of-flight secondary ion mass spectrometry. The quality of graphene, the number of graphene layers, and the layers stacking order in synthesized bilayer graphene films were confirmed by Raman and electron diffraction measurements. A four point probe station was used to measure the sheet resistance of graphene films. As compared to Cu foil, the prepared dilute Cu(Ni) alloy demonstrated the good capability of growing large-area AB-stacked bilayer graphene film by increasing Ni content in Cu surface layer

  11. The study and the realization of radiation detectors made from polycrystalline diamond films grown by microwave plasma enhanced chemical vapour deposition technique

    International Nuclear Information System (INIS)

    The aim of this work was to develop radiation detectors made from polycrystalline diamond films grown by microwave plasma enhanced chemical vapour deposition technique. The influence of surface treatments, contact technology and diamond growth parameters on the diamond detectors characteristics was investigated in order to optimise the detector response to alpha particles. The first part of the study focused on the electrical behaviour of as-deposited diamond surface, showing a p type conduction and its influence on the leakage current of the device. A surface preparation process was established in order to reduce the leakage current of the device by surface dehydrogenation using an oxidising step. Several methods to form and treat electrical contacts were also investigated showing that the collection efficiency of the device decreases after contact annealing. In the second part, we reported the influence of the diamond deposition parameters on the characteristics of the detectors. The increase of the deposition temperature and/or methane concentration was shown to lead η to decrease. In contrast, η was found to increase with the micro-wave power. The evolution of the diamond detector characteristics results from the variation in sp2 phases incorporation and in the crystallography quality of the films. These defects increase the leakage current and reduce the carrier mobility and lifetime. Measurements carried out on detectors with different thicknesses showed that the physical properties varies along the growth direction, improving with the film thickness. Finally, the addition of nitrogen (> 10 ppm) in the gas mixture during diamond deposition was found to strongly reduce the collection efficiency of the detectors. To conclude the study, we fabricated and characterised diamond devices which were used for thermal neutron detection and for the intensity and shape measurement of VUV and soft X-ray pulses. (author)

  12. Determination of the optical parameters of a-Si:H thin films deposited by hot wire–chemical vapour deposition technique using transmission spectrum only

    Indian Academy of Sciences (India)

    Nabeel A Bakr; A M Funde; V S Waman; M M Kamble; R R Hawaldar; D P Amalnerkar; S W Gosavi; S R Jadkar

    2011-03-01

    Three demonstration samples of intrinsic hydrogenated amorphous silicon (a-Si:H) films were deposited using hot wire–chemical vapour deposition (HW–CVD) technique. The optical parameters and the thickness were determined from the extremes of the interference fringes of transmission spectrum in the range of 400–2500 nm using the envelope method. The calculated values of the refractive index () were fitted using the two-term Cauchy dispersion relation and the static refractive index values (0) obtained were 2.799, 2.629 and 3.043 which were in the range of the reported values. The calculated thicknesses for all samples were cross-checked with Taly-Step profilometer and found to be almost equal. Detailed analysis was carried out to obtain the optical band gap (g) using Tauc’s method and the estimated values were 1.99, 2.01 and 1.75 eV. The optical band gap values were correlated with the hydrogen content (H) in the samples calculated from Fourier transform infrared (FTIR) analysis. An attempt was made to apply Wemple–DiDomenico single-effective oscillator model to the a-Si:H samples to calculate the optical parameters. The optical band gap obtained by Tauc’s method and the static refractive index calculated from Cauchy fitting are in good agreement with those obtained by the single-effective oscillator model. The real and the imaginary parts of dielectric constant (r, ), and the optical conductivity () were also calculated.

  13. A dilute Cu(Ni) alloy for synthesis of large-area Bernal stacked bilayer graphene using atmospheric pressure chemical vapour deposition

    Science.gov (United States)

    Madito, M. J.; Bello, A.; Dangbegnon, J. K.; Oliphant, C. J.; Jordaan, W. A.; Momodu, D. Y.; Masikhwa, T. M.; Barzegar, F.; Fabiane, M.; Manyala, N.

    2016-01-01

    A bilayer graphene film obtained on copper (Cu) foil is known to have a significant fraction of non-Bernal (AB) stacking and on copper/nickel (Cu/Ni) thin films is known to grow over a large-area with AB stacking. In this study, annealed Cu foils for graphene growth were doped with small concentrations of Ni to obtain dilute Cu(Ni) alloys in which the hydrocarbon decomposition rate of Cu will be enhanced by Ni during synthesis of large-area AB-stacked bilayer graphene using atmospheric pressure chemical vapour deposition. The Ni doped concentration and the Ni homogeneous distribution in Cu foil were confirmed with inductively coupled plasma optical emission spectrometry and proton-induced X-ray emission. An electron backscatter diffraction map showed that Cu foils have a single (001) surface orientation which leads to a uniform growth rate on Cu surface in early stages of graphene growth and also leads to a uniform Ni surface concentration distribution through segregation kinetics. The increase in Ni surface concentration in foils was investigated with time-of-flight secondary ion mass spectrometry. The quality of graphene, the number of graphene layers, and the layers stacking order in synthesized bilayer graphene films were confirmed by Raman and electron diffraction measurements. A four point probe station was used to measure the sheet resistance of graphene films. As compared to Cu foil, the prepared dilute Cu(Ni) alloy demonstrated the good capability of growing large-area AB-stacked bilayer graphene film by increasing Ni content in Cu surface layer.

  14. A dilute Cu(Ni) alloy for synthesis of large-area Bernal stacked bilayer graphene using atmospheric pressure chemical vapour deposition

    Energy Technology Data Exchange (ETDEWEB)

    Madito, M. J.; Bello, A.; Dangbegnon, J. K.; Momodu, D. Y.; Masikhwa, T. M.; Barzegar, F.; Manyala, N., E-mail: ncholu.manyala@up.ac.za [Department of Physics, Institute of Applied Materials, SARCHI Chair in Carbon Technology and Materials, University of Pretoria, Pretoria 0028 (South Africa); Oliphant, C. J.; Jordaan, W. A. [National Metrology Institute of South Africa, Private Bag X34, Lynwood Ridge, Pretoria 0040 (South Africa); Fabiane, M. [Department of Physics, Institute of Applied Materials, SARCHI Chair in Carbon Technology and Materials, University of Pretoria, Pretoria 0028 (South Africa); Department of Physics, National University of Lesotho, P.O. Roma 180 (Lesotho)

    2016-01-07

    A bilayer graphene film obtained on copper (Cu) foil is known to have a significant fraction of non-Bernal (AB) stacking and on copper/nickel (Cu/Ni) thin films is known to grow over a large-area with AB stacking. In this study, annealed Cu foils for graphene growth were doped with small concentrations of Ni to obtain dilute Cu(Ni) alloys in which the hydrocarbon decomposition rate of Cu will be enhanced by Ni during synthesis of large-area AB-stacked bilayer graphene using atmospheric pressure chemical vapour deposition. The Ni doped concentration and the Ni homogeneous distribution in Cu foil were confirmed with inductively coupled plasma optical emission spectrometry and proton-induced X-ray emission. An electron backscatter diffraction map showed that Cu foils have a single (001) surface orientation which leads to a uniform growth rate on Cu surface in early stages of graphene growth and also leads to a uniform Ni surface concentration distribution through segregation kinetics. The increase in Ni surface concentration in foils was investigated with time-of-flight secondary ion mass spectrometry. The quality of graphene, the number of graphene layers, and the layers stacking order in synthesized bilayer graphene films were confirmed by Raman and electron diffraction measurements. A four point probe station was used to measure the sheet resistance of graphene films. As compared to Cu foil, the prepared dilute Cu(Ni) alloy demonstrated the good capability of growing large-area AB-stacked bilayer graphene film by increasing Ni content in Cu surface layer.

  15. Nanocrystalline silicon and silicon quantum dots formation within amorphous silicon carbide by plasma enhanced chemical vapour deposition method controlling the Argon dilution of the process gases

    International Nuclear Information System (INIS)

    Structural and optical properties of the amorphous silicon carbide (a-SiC:H) thin films deposited by radio frequency plasma enhanced chemical vapour deposition method from a mixture of silane (SiH4) and methane (CH4) diluted in argon (Ar) have been studied with variation of Ar dilution from 94% to 98.4%. It is observed that nanocrystalline silicon starts to form within the a-SiC:H matrix by increasing the dilution to 96%. With further increase in Ar dilution to 98% formation of the silicon nanocrystals (nc-Si) with variable size is enhanced. The optical band gap (Eg) of the a-SiC:H film decreases from 2.0 eV to 1.9 eV with increase in Ar dilution from 96% to 98% as the a-SiC:H films gradually become Si rich. On increasing the Ar dilution further to 98.4% leads to the appearance of crystalline silicon quantum dots (c-Si q-dots) of nearly uniform size of 3.5 nm. The quantum confinement effect is apparent from the sharp increase in the Eg value to 2.6 eV. The phase transformation phenomenon from nc-Si within the a-SiC:H films to Si q-dot were further studied by high resolution transmission electron microscopy and the grazing angle X-ray diffraction spectra. A relaxation in the lattice strain has been observed with the formation of Si q-dots.

  16. Hydrogen production by ethanol partial oxidation over nano-iron oxide catalysts produced by chemical vapour synthesis

    Energy Technology Data Exchange (ETDEWEB)

    Ahmed, Wael Ahmed Abou Taleb Sayed

    2011-01-13

    This work presents the experimental results of the synthesis of unsupported and supported SiC iron oxide nanoparticles and their catalytic activity towards ethanol partial oxidation. For comparison, further unsupported iron oxide phases were investigated towards the ethanol partial oxidation. These {gamma}-Fe{sub 2}O{sub 3} and {alpha}/{gamma}-Fe{sub 2}O{sub 3} phase catalysts were prepared by the CVS method using Fe(CO){sub 5} as precursor, supplied by another author. The {alpha}-Fe{sub 2}O{sub 3} and SiC nanoparticles were prepared by the CVS method using a home made hot wall reactor technique at atmospheric pressure. Ferrocene and tetramethylsilane were used as precursor for the production process. Process parameters of precursor evaporation temperature, precursor concentration, gas mixture velocity and gas mixture dilution were investigated and optimised to produce particle sizes in a range of 10 nm. For Fe{sub 2}O{sub 3}/SiC catalyst series production, a new hot wall reactor setup was used. The particles were produced by simultaneous thermal decomposition of ferrocene and tetramethylsilane in one reactor from both sides. The production parameters of inlet tube distance inside the reactor, precursor evaporation temperature and carrier gas flow were investigated to produce a series of samples with different iron oxide content. The prepared catalysts composition, physical and chemical properties were characterized by XRD, EDX, SEM, BET surface area, FTIR, XPS and dynamic light scattering (DLS) techniques. The catalytic activity for the ethanol gas-phase oxidation was investigated in a temperature range from 260 C to 290 C. The product distributions obtained over all catalysts were analysed with mass spectrometry analysis tool. The activity of bulk Fe{sub 2}O{sub 3} and SiC nanoparticles was compared with prepared nano-iron oxide phase catalysts. The reaction parameters, such as reaction temperature and O{sub 2}/ethanol ratio were investigated. The catalysts

  17. Bulk micromachining of Si by metal-assisted chemical etching.

    Science.gov (United States)

    Kim, Sang-Mi; Khang, Dahl-Young

    2014-09-24

    Bulk micromachining of Si is demonstrated by the well-known metal-assisted chemical etching (MaCE). Si microstructures, having lateral dimension from 5 μm up to millimeters, are successfully sculpted deeply into Si substrate, as deep as >100 μm. The key ingredient of this success is found to be the optimizations of catalyst metal type and its morphology. Combining the respective advantages of Ag and Au in the MaCE as a Ag/Au bilayer configuration leads to quite stable etch reaction upon a prolonged etch duration up to >5 h. Further, the permeable nature of the optimized Ag/Au bilayer metal catalyst enables the etching of pattern features having very large lateral dimension. Problems such as the generation of micro/nanostructures and chemical attacks on the top of pattern surface are successfully overcome by process optimizations such as post-partum sonication treatment and etchant formulation control. The method can also be successful to vertical micromachining of Si substrate having other crystal orientations than Si(100), such as Si(110) and Si(111). The simple, easy, and low-cost nature of present approach may be a great help in bulk micromachining of Si for various applications such as microelectromechanical system (MEMS), micro total analysis system (μTAS), and so forth. PMID:24820931

  18. Radiolysis and hydrolysis of magnetically assisted chemical separation particles

    International Nuclear Information System (INIS)

    The magnetically assisted chemical separation (MACS) process is designed to separate transuranic (TRU) elements out of high-level waste (HLW) or TRU waste. Magnetic microparticles (1--25 μm) were coated with octyl (phenyl)N,N-diisobutylcarbamoylmethylphosphine oxide (CMPO) dissolved in tributyl phosphate (TBP) and tested for removing TRU elements from acidic nitrate solutions. The particles were contacted with nitric acid solutions and Hanford plutonium finishing plant (PFP) simulant, irradiated with a high intensity 60Co γ-ray source, and evaluated for effectiveness in removing TRU elements from 2m HNO3 solutions. The resistance of the coatings and magnetic cores to radiolytic damage and hydrolytic degradation was investigated by irradiating samples of particles suspended in a variety of solutions with doses of up to 5 Mrad. Transmission electron microscopy (TEM), magnetic susceptibility measurements, and physical observations of the particles and suspension solutions were used to assess physical changes to the particles. Processes that affect the surface of the particles dramatically alter the binding sites for TRU in solution. Hydrolysis played a larger role than radiolysis in the degradation of the extraction capacity of the particles

  19. Ultrasonic flexural vibration assisted chemical mechanical polishing for sapphire substrate

    International Nuclear Information System (INIS)

    The sapphire substrates are polished by traditional chemical mechanical polishing (CMP) and ultrasonic flexural vibration (UFV) assisted CMP (UFV-CMP) respectively with different pressures. UFV-CMP combines the functions of traditional CMP and ultrasonic machining (USM) and has special characteristics, which is that ultrasonic vibrations of the rotating polishing head are in both horizontal and vertical directions. The material removal rates (MRRs) and the polished surface morphology of CMP and UFV-CMP are compared. The MRR of UFV-CMP is two times larger than that of traditional CMP. The surface roughness (root mean square, RMS) of the polished sapphire substrate of UFV-CMP is 0.83 A measured by the atomic force microscopy (AFM), which is much better than 2.12 A obtained using the traditional CMP. And the surface flatness of UFV-CMP is 0.12 μm, which is also better than 0.23 μm of the traditional CMP. The results show that UFV-CMP is able to improve the MRR and finished surface quality of the sapphire substrates greatly. The material removal and surface polishing mechanisms of sapphire in UFV-CMP are discussed too.

  20. TPR system: a powerful technique to monitor carbon nanotube formation during chemical vapour deposition; Sistema RTP: uma tecnica poderosa para o monitoramento da formacao de nanotubos de carbono durante o processo por deposicao de vapor quimico

    Energy Technology Data Exchange (ETDEWEB)

    Tristao, Juliana Cristina; Moura, Flavia Cristina Camilo; Lago, Rochel Montero, E-mail: rochel@ufmg.b [Universidade Federal de Minas Gerais (DQ/UFMG), Belo Horizonte, MG (Brazil). Dept. de Quimica; Sapag, Karim [Universidade Nacional de San Luis (Argentina). Lab. de Ciencias de Superficies y Medios Porosos

    2010-07-01

    In this work, a TPR (Temperature Programmed Reduction) system is used as a powerful tool to monitor carbon nanotubes production during CVD (Chemical Vapour Deposition), The experiments were carried out using catalyst precursors based on Fe-Mo supported on Al{sub 2}O{sub 3} and methane as carbon source. As methane reacts on the Fe metal surface, carbon is deposited and H2 is produced. TPR is very sensitive to the presence of H2 and affords information on the temperature where catalyst is active to form different forms of carbon, the reaction kinetics, the catalyst deactivation and carbon yields. (author)

  1. Plasma-assisted partial oxidation of methane at low temperatures: numerical analysis of gas-phase chemical mechanism

    Energy Technology Data Exchange (ETDEWEB)

    Goujard, Valentin; Nozaki, Tomohiro; Yuzawa, Shuhei; Okazaki, Ken [Department of Mechanical and Control Engineering, Tokyo Institute of Technology, 2-12-1 O-okayama, Meguro, 1528552, Tokyo (Japan); Agiral, Anil, E-mail: tnozaki@mech.titech.ac.jp [Mesoscale Chemical Systems, MESA Institute for Nanotechnology, Faculty of Science and Technology, University of Twente, PO Box 217, 7500 AE, Enschede (Netherlands)

    2011-07-13

    Methane partial oxidation was investigated using a plasma microreactor. The experiments were performed at 5 and 300 deg. C. Microreactor configuration allows an efficient evacuation of the heat generated by methane partial oxidation and dielectric barrier discharges, allowing at the same time a better temperature control. At 5 deg. C, liquid condensation of low vapour pressure compounds, such as formaldehyde and methanol, occurs. {sup 1}H-NMR analysis allowed us to demonstrate significant CH{sub 3}OOH formation during plasma-assisted partial oxidation of methane. Conversion and product selectivity were discussed for both temperatures. In the second part of this work, a numerical simulation was performed and a gas-phase chemical mechanism was proposed and discussed. From the comparison between the experimental results and the simulation it was found that CH{sub 3}OO{center_dot} formation has a determinant role in oxygenated compound production, since its fast formation disfavoured radical recombination. At 5 deg. C the oxidation leads mainly towards oxygenated compound formation, and plasma dissociation was the major phenomenon responsible for CH{sub 4} conversion. At 300 deg. C, higher CH{sub 4} conversion resulted from oxidative reactions induced by {center_dot}OH radicals with a chemistry predominantly oxidative, producing CO, H{sub 2}, CO{sub 2} and H{sub 2}O.

  2. Experimental Data of Vapour Permeation Obtained from New Apparatus

    Czech Academy of Sciences Publication Activity Database

    Morávková, Lenka; Sedláková, Zuzana; Vejražka, Jiří; Izák, Pavel

    Bratislava : Slovak Society of Chemical Engineering, 2015 - (Markoš, J.), s. 71 ISBN 978-80-89475-14-8. [International Conference of Slovak Society of Chemical Engineering /42./. Tatranské Matliare (SK), 25.05.2015-29.05.2015] R&D Projects: GA MŠk(CZ) LD14094 Institutional support: RVO:67985858 Keywords : vapour permeation * evaluation of experimental data * organic vapour removal Subject RIV: CI - Industrial Chemistry, Chemical Engineering

  3. Experimental Data of Vapour Permeation Obtained from New Apparatus

    Czech Academy of Sciences Publication Activity Database

    Morávková, Lenka; Sedláková, Zuzana; Vejražka, Jiří; Izák, Pavel

    Bratislava: Slovak Society of Chemical Engineering, 2015 - (Markoš, J.), s. 71 ISBN 978-80-89475-14-8. [International Conference of Slovak Society of Chemical Engineering /42./. Tatranské Matliare (SK), 25.05.2015-29.05.2015] R&D Projects: GA MŠk(CZ) LD14094 Institutional support: RVO:67985858 Keywords : vapour permeation * evaluation of experimental data * organic vapour removal Subject RIV: CI - Industrial Chemistry, Chemical Engineering

  4. A comparison of the wear and fatigue properties of plasma-assisted physical vapour deposition TiN, CrN and duplex coatings on Ti-6Al-4V

    International Nuclear Information System (INIS)

    The study sets out to establish a comparison between duplex systems of plasma nitriding followed by plasma-assisted physical vapour deposition (PAPVD) of TiN deposited on Ti-6Al-4V, compared with PAPVD of TiN and CrN alone. The fatigue resistance has also been examined since conventional surface modifications can often impair fatigue resistance. A rubber-wheel-type abrasion tester and pin-on-disc sliding wear tester were used to examine the wear resistance of the coatings and the load-bearing capacity of the substrate respectively. A Wohler-type rotating tester was used to study the fatigue properties. Using smooth rotating-bending fatigue specimens tested in air at 5700 rev min-1 for 106 cycles or until failure it was found that TiN, CrN and the duplex coating did not impair fatigue resistance but actually improved the S-N curves and increased the endurance limit. From the wear results it was found that, although TiN and CrN do improve the wear resistance of Ti-6Al-4V significantly, it is the duplex coating that has much the greater load-bearing capacity on the titanium substrate and gives a significant improvement on PAPVD TiN or CrN coatings in sliding and abrasive wear conditions. (orig.)

  5. Inspired superhydrophobic surfaces by a double-metal-assisted chemical etching route

    International Nuclear Information System (INIS)

    Graphical abstract: A double-metal-assisted chemical etching method is employed to fabricate superhydrophobic surfaces, showing a good superhydrophobicity with the contact angle of about 170°, and the sliding angle of about 0°. Meanwhile, the potential formation mechanism about it is also presented. Highlights: ► A double-metal-assisted chemical etching method is employed to fabricate superhydrophobic surfaces. ► The obtained surfaces show good superhydrophobicity with a high contact angle and low sliding angle. ► The color of the etched substrate dark brown or black and it is so-called black silicon. -- Abstract: Silicon substrates treated by metal-assisted chemical etching have been studied for many years since they could be employed in a variety of electronic and optical devices such as integrated circuits, photovoltaics, sensors and detectors. However, to the best of our knowledge, the chemical etching treatment on the same silicon substrate with the assistance of two or more kinds of metals has not been reported. In this paper, we mainly focus on the etching time and finally obtain a series of superhydrophobic silicon surfaces with novel etching structures through two successive etching processes of Cu-assisted and Ag-assisted chemical etching. It is shown that large-scale homogeneous but locally irregular wire-like structures are obtained, and the superhydrophobic surfaces with low hysteresis are prepared after the modifications with low surface energy materials. It is worth noting that the final silicon substrates not only possess high static contact angle and low hysteresis angle, but also show a black color, indicating that the superhydrophobic silicon substrate has an extremely low reflectance in a certain range of wavelengths. In our future work, we will go a step further to discuss the effect of temperature, the size of Cu nanoparticles and solution concentration on the final topography and superhydrophobicity.

  6. Solvent-assisted dewetting during chemical vapor deposition.

    Science.gov (United States)

    Chen, Xichong; Anthamatten, Mitchell

    2009-10-01

    This study examines the use of a nonreactive solvent vapor, tert-butanol, during initiated chemical vapor deposition (iCVD) to promote polymer film dewetting. iCVD is a solventless technique to grow polymer thin films directly from gas phase feeds. Using a custom-built axisymmetric hot-zone reactor, smooth poly(methyl methacrylate) films are grown from methyl methacrylate (MMA) and tert-butyl peroxide (TBPO). When solvent vapor is used, nonequilibrium dewetted structures comprising of randomly distributed polymer droplets are observed. The length scale of observed topographies, determined using power spectral density (PSD) analysis, ranges from 5 to 100 microm and is influenced by deposition conditions, especially the carrier gas and solvent vapor flow rates. The use of a carrier gas leads to faster deposition rates and suppresses thin film dewetting. The use of solvent vapor promotes dewetting and leads to larger length scales of the dewetted features. Control over lateral length scale is demonstrated by preparation of hierarchal "bump on bump" topographies. Vapor-induced dewetting is demonstrated on silicon wafer substrate with a native oxide layer and also on hydrophobically modified substrate prepared using silane coupling. Autophobic dewetting of PMMA from SiOx/Si during iCVD is attributed to a thin film instability driven by both long-range van der Waals forces and short-range polar interactions. PMID:19670895

  7. Review on advanced of solar assisted chemical heat pump dryer for agriculture produce

    International Nuclear Information System (INIS)

    Over the past three decades there has been nearly exponential growth in drying R and D on a global scale. Improving of the drying operation to save energy, improve product quality as well as reduce environmental effect remained as the main objectives of any development of drying system. A solar assisted chemical heat pump dryer is a new solar drying system, which have contributed to better cost-effectiveness and better quality dried products as well as saving energy. A solar collector is adapted to provide thermal energy in a reactor so a chemical reaction can take place. This reduces the dependency of the drying technology on fossil energy for heating. In this paper a review on advanced of solar assisted chemical heat pump dryer is presented (the system model and the results from experimental studies on the system performance are discussed). The review of heat pump dryers and solar assisted heat pump dryer is presented. Description of chemical heat pump types and the overview of chemical heat pump dryer are discussed. The combination of chemical heat pump and solar technology gives extra efficiency in utilizing energy. (author)

  8. Review on advanced of solar assisted chemical heat pump dryer for agriculture produce

    Energy Technology Data Exchange (ETDEWEB)

    Fadhel, M.I. [Solar Energy Research Institute, Universiti Kebangsaan Malaysia, 43600 Bangi, Selangor (Malaysia); Faculty of Engineering and Technology, Multimedia University, Jalan Ayer Keroh Lama, 75450 Melaka (Malaysia); Sopian, K.; Daud, W.R.W.; Alghoul, M.A. [Solar Energy Research Institute, Universiti Kebangsaan Malaysia, 43600 Bangi, Selangor (Malaysia)

    2011-02-15

    Over the past three decades there has been nearly exponential growth in drying R and D on a global scale. Improving of the drying operation to save energy, improve product quality as well as reduce environmental effect remained as the main objectives of any development of drying system. A solar assisted chemical heat pump dryer is a new solar drying system, which have contributed to better cost-effectiveness and better quality dried products as well as saving energy. A solar collector is adapted to provide thermal energy in a reactor so a chemical reaction can take place. This reduces the dependency of the drying technology on fossil energy for heating. In this paper a review on advanced of solar assisted chemical heat pump dryer is presented (the system model and the results from experimental studies on the system performance are discussed). The review of heat pump dryers and solar assisted heat pump dryer is presented. Description of chemical heat pump types and the overview of chemical heat pump dryer are discussed. The combination of chemical heat pump and solar technology gives extra efficiency in utilizing energy. (author)

  9. Isothermal Vapour-Liquid Equilibrium with Chemical Reaction in the Quaternary Water + Methanol + Acetic Acid + Methyl Acetate System, and in Five Binary Subsystems.

    Czech Academy of Sciences Publication Activity Database

    Bernatová, Svatoslava; Aim, Karel; Wichterle, Ivan

    2006-01-01

    Roč. 247, 1-2 (2006) , s. 96-101. ISSN 0378-3812 R&D Projects: GA ČR(CZ) GA203/03/1588 Institutional research plan: CEZ:AV0Z40720504 Keywords : esterification * chemical equilibria * phase equilibria Subject RIV: CF - Physical ; Theoretical Chemistry Impact factor: 1.680, year: 2006

  10. Microwave-irradiation-assisted hybrid chemical approach for titanium dioxide nanoparticle synthesis: microbial and cytotoxicological evaluation.

    Science.gov (United States)

    Ranjan, Shivendu; Dasgupta, Nandita; Rajendran, Bhavapriya; Avadhani, Ganesh S; Ramalingam, Chidambaram; Kumar, Ashutosh

    2016-06-01

    Titanium dioxide nanoparticles (TNPs) are widely used in the pharmaceutical and cosmetics industries. It is used for protection against UV exposure due to its light-scattering properties and high refractive index. Though TNPs are increasingly used, the synthesis of TNPs is tedious and time consuming; therefore, in the present study, microwave-assisted hybrid chemical approach was used for TNP synthesis. In the present study, we demonstrated that TNPs can be synthesized only in 2.5 h; however, the commonly used chemical approach using muffle furnace takes 5 h. The activity of TNP depends on the synthetic protocol; therefore, the present study also determined the effect of microwave-assisted hybrid chemical approach synthetic protocol on microbial and cytotoxicity. The results showed that TNP has the best antibacterial activity in decreasing order from Escherichia coli, Bacillus subtilis, and Staphylococcus aureus. The IC50 values of TNP for HCT116 and A549 were found to be 6.43 and 6.04 ppm, respectively. Cell death was also confirmed from trypan blue exclusion assay and membrane integrity loss was observed. Therefore, the study determines that the microwave-assisted hybrid chemical approach is time-saving; hence, this technique can be upgraded from lab scale to industrial scale via pilot plant scale. Moreover, it is necessary to find the mechanism of action at the molecular level to establish the reason for greater bacterial and cytotoxicological toxicity. Graphical abstract A graphical representation of TNP synthesis. PMID:26976013

  11. A catalyst-free synthesis of germanium nanowires obtained by combined X-ray chemical vapour deposition of GeH$_4$ and low-temperature thermal treatment techniques

    Indian Academy of Sciences (India)

    CHIARA DEMARIA; ALDO ARRAIS; PAOLA BENZI; ENRICO BOCCALERI; PAOLA ANTONIOTTI; ROBERTO RABEZZANA; LORENZA OPERTI

    2016-04-01

    A catalyst-free innovative synthesis, by combined X-ray chemical vapour deposition and lowtemperature thermal treatments, which has not been applied since so far to the growth of germanium nanowires (Ge-NWs), produced high yields of the nanoproducts with theGeH4 reactant gas. Nanowires were grown on both surfaces of a conventional deposition quartz substrate. They were featured with high purity and very large aspect ratios (ranging from 100 to 500). Products were characterized by scanning electron microscopy with energy-dispersiveatomic X-ray fluorescence and transmission electron microscopies, X-ray powder diffraction diffractometry, thermogravimetric analysis with differential scanning calorimetry, vibrational infrared and Raman and ultraviolet–visible–near infrared spectroscopies. A quantitative nanowire bundles formation was observed in the lower surface of the quartz substrate positioned over a heating support, whilst spots of nanoflowers constituted by Ge-NWs emerged from a bulk amorphous germanium film matter, deposited on the upper surface of the substrate. Thenanoproducts were characterized by crystalline core morphology, providing semiconductive features and optical band gap of about 0.67 eV. The possible interpretative base-growth mechanisms of the nanowires, stimulated bythe concomitant application of radiant and thermal conditions with no specific added metal catalyst, are hereafter investigated and presented.

  12. Comparative Study of Properties of ZnO/GaN/Al2O3 and ZnO/Al2O3 Films Grown by Low-Pressure Metal Organic Chemical Vapour Deposition

    Institute of Scientific and Technical Information of China (English)

    赵佰军; 杨洪军; 杜国同; 缪国庆; 杨天鹏; 张源涛; 高仲民; 王金忠; 方秀军; 刘大力; 李万成; 马燕; 杨晓天; 刘博阳

    2003-01-01

    ZnO films were deposited by low-pressure metal organic chemical vapour deposition on epi-GaN/Al2O3 films and c-Al2O3 substrates.The structure and optical properties of the ZnO/GaN/Al2O3 and ZnO/Al2O3 films have been investigated to determine the differences between the two substrates.ZnO films on GaN/Al2O3 show very strong emission features associated with exciton transitions,just as ZnO films on Al2O3,while the crystalline structural qualities for ZnO films on GaN/Al2O3 are much better than those for ZnO films directly grown on Al2O3 substrates.Zn and O elements in the deposited ZnO/GaN/Al2O3 and ZnO/Al2O3 films are investigated and compared by x-ray photoelectron spectroscopy.According to the statistical results,the Zn/O ratio changes from Zn-rich for ZnO/Al2O3 films to O-rich for ZnO/GaN/Al2O3 films.

  13. Epitaxial growth of antiphase boundary free GaAs layer on 300 mm Si(001) substrate by metalorganic chemical vapour deposition with high mobility

    Science.gov (United States)

    Alcotte, R.; Martin, M.; Moeyaert, J.; Cipro, R.; David, S.; Bassani, F.; Ducroquet, F.; Bogumilowicz, Y.; Sanchez, E.; Ye, Z.; Bao, X. Y.; Pin, J. B.; Baron, T.

    2016-04-01

    Metal organic chemical vapor deposition of GaAs on standard nominal 300 mm Si(001) wafers was studied. Antiphase boundary (APB) free epitaxial GaAs films as thin as 150 nm were obtained. The APB-free films exhibit an improvement of the room temperature photoluminescence signal with an increase of the intensity of almost a factor 2.5. Hall effect measurements show an electron mobility enhancement from 200 to 2000 cm2/V s. The GaAs layers directly grown on industrial platform with no APBs are perfect candidates for being integrated as active layers for nanoelectronic as well as optoelectronic devices in a CMOS environment.

  14. Spontaneuos and Parametric Processes in Warm Rubidium Vapours

    Directory of Open Access Journals (Sweden)

    Dąbrowski M.

    2014-12-01

    Full Text Available Warm rubidium vapours are known to be a versatile medium for a variety of experiments in atomic physics and quantum optics. Here we present experimental results on producing the frequency converted light for quantum applications based on spontaneous and stimulated processes in rubidium vapours. In particular, we study the efficiency of spontaneously initiated stimulated Raman scattering in the Λ-level configuration and conditions of generating the coherent blue light assisted by multi-photon transitions in the diamond-level configuration. Our results will be helpful in search for new types of interfaces between light and atomic quantum memories.

  15. Electron Cyclotron Resonance Based Chemically Assisted Plasma Etching Of Silicon in CF4/Ar Plasma

    Science.gov (United States)

    Bhardwaj, R. K.; Angra, S. K.; Bajpai, R. P.; Lal, Madan; Bharadwaj, Lalit M.

    2005-09-01

    Etching of silicon in Chemical Assisted Plasma Etching mode with CF4 gas being sprayed on the surface of wafer in process chamber and Ar fed to ECR cavity in Electron Cyclotron Resonance (ECR) source was carried out. The plasma source was 2.45 GHz microwave source superimposed with mirror type magnetic field configuration to have resonance. Effect of CF4/Ar ratio and substrate bias on etching rate of silicon and anisotropy of etched profile has been investigated. The variation of etch rate and anisotropy has been correlated to the availability of fluorine atoms and other radicals available for etching. Optimum parameters required for etching of silicon in chemical assisted plasma etching with self-assembled ECR plasma source has been established.

  16. Electron Cyclotron Resonance Based Chemically Assisted Plasma Etching Of Silicon in CF4/Ar Plasma

    International Nuclear Information System (INIS)

    Etching of silicon in Chemical Assisted Plasma Etching mode with CF4 gas being sprayed on the surface of wafer in process chamber and Ar fed to ECR cavity in Electron Cyclotron Resonance (ECR) source was carried out. The plasma source was 2.45 GHz microwave source superimposed with mirror type magnetic field configuration to have resonance. Effect of CF4/Ar ratio and substrate bias on etching rate of silicon and anisotropy of etched profile has been investigated. The variation of etch rate and anisotropy has been correlated to the availability of fluorine atoms and other radicals available for etching. Optimum parameters required for etching of silicon in chemical assisted plasma etching with self-assembled ECR plasma source has been established

  17. Microwave-Assisted Reaction in Green Solvents Recycles PHB to Functional Chemicals

    OpenAIRE

    Yang, Xi; Odelius, Karin; Hakkarainen, Minna

    2014-01-01

    An efficient microwave-assisted process for chemical recycling of poly(3-hydroxybutyrate) (PHB) in green solvents was demonstrated. Previously, PHB has been thermally recycled to crotonic acid and unsaturated oligomers. Our aim was to utilize green solvents (water, methanol, and ethanol) under alkaline conditions to achieve fast hydrolysis and monomeric or oligomeric degradation products with carboxyl and hydroxyl or methoxy or ethoxy end groups. Preliminary screening confirmed that the most ...

  18. Laser-assisted chemical liquid-phase deposition of metals for micro- and optoelectronics

    OpenAIRE

    Kordás, K. (Krisztián)

    2002-01-01

    Abstract The demands toward the development of simple and cost-effective fabrication methods of metallic structures with high lateral resolution on different substrates - applied in many fields of technology, such as in microelectronics, optoelectronics, micromechanics as well as in sensor and actuator applications - gave the idea to perform this research. Due to its simplicity, laser-assisted chemical liquid-phase deposition (LCLD) has been investigated and applied for the metallization o...

  19. Epitaxial growth of antiphase boundary free GaAs layer on 300 mm Si(001 substrate by metalorganic chemical vapour deposition with high mobility

    Directory of Open Access Journals (Sweden)

    R. Alcotte

    2016-04-01

    Full Text Available Metal organic chemical vapor deposition of GaAs on standard nominal 300 mm Si(001 wafers was studied. Antiphase boundary (APB free epitaxial GaAs films as thin as 150 nm were obtained. The APB-free films exhibit an improvement of the room temperature photoluminescence signal with an increase of the intensity of almost a factor 2.5. Hall effect measurements show an electron mobility enhancement from 200 to 2000 cm2/V s. The GaAs layers directly grown on industrial platform with no APBs are perfect candidates for being integrated as active layers for nanoelectronic as well as optoelectronic devices in a CMOS environment.

  20. Chemical vapour deposition of graphene on Nk(111) and Co(0001) and intercalation with Au to study Dirac Cone Formation and Rashba splitting

    Energy Technology Data Exchange (ETDEWEB)

    Sanchez-Barriga, J.; Vescovo, E.; Varykhalov, A.; Scholz, M.R.; Rader, O.; Marchenko, D.; Rybkin, A.

    2010-01-01

    We show in detail monitoring by photoelectron spectroscopy how graphene can be grown by chemical vapor deposition on the transition-metal surfaces Ni(111) and Co(0001) and intercalated by a monoatomic layer of Au. For both systems, a linear E(k) dispersion of massless Dirac fermions appears in the graphene {pi}-band in the vicinity of the Fermi energy. In order to study ferromagnetism and spin-orbit effects by spin- and angle-resolved photoelectron spectroscopy, the sample must be magnetized in remanence. To this end, a W(110) substrate is prepared, its cleanliness verified by photoemission from W(110) surface states and surface core levels, and epitaxial Ni(111) and Co(0001) thin films are grown on top. Spin-resolved photoemission from the {pi}-band shows that the ferromagnetic polarization of graphene/Ni(111) and graphene/Co(0001) is negligible and that graphene on Ni(111) is after intercalation of Au spin-orbit split by the Rashba effect.

  1. Porous Silicon & Titanium Dioxide Coatings Prepared by Atmospheric Pressure Plasma Jet Chemical Vapour Deposition Technique-A Novel Coating Technology for Photovoltaic Modules

    Directory of Open Access Journals (Sweden)

    S. Bhatt

    2011-01-01

    Full Text Available Atmospheric Pressure Plasma Jet (APPJ is an alternative for wet processes used to make anti reflection coatings and smooth substrate surface for the PV module. It is also an attractive technique because of it’s high growth rate, low power consumption, lower cost and absence of high cost vacuum systems. This work deals with the deposition of silicon oxide from hexamethyldisiloxane (HMDSO thin films and titanium dioxide from tetraisopropyl ortho titanate using an atmospheric pressure plasma jet (APPJ system in open air conditions. A sinusoidal high voltage with a frequency between 19-23 kHz at power up to 1000 W was applied between two tubular electrodes separated by a dielectric material. The jet, characterized by Tg ~ 600-800 K, was mostly laminar (Re ~ 1200 at the nozzle exit and became partially turbulent along the jet axis (Re ~ 3300. The spatially resolved emission spectra showed OH, N2, N2+ and CN molecular bands and O, H, N, Cu and Cr lines as well as the NO2 chemiluminescence continuum (450-800 nm. Thin films with good uniformity on the substrate were obtained at high deposition rate, between 800 -1000 nm.s-1, and AFM results revealed that coatings are relatively smooth (Ra ~ 2 nm. The FTIR and SEM analyses were better used to monitor the chemical composition and the morphology of the films in function of the different experimental conditions.

  2. Structural and chemical transformations in the products of the interaction of silica gel with vapours of TiCl4 and H2O

    International Nuclear Information System (INIS)

    Titanium oxide structures were synthesised by a molecular layering method on the surface of silica (ShSKG, SBET = 270 m2/g, V = 0.94 cm3/g, d = 14 nm). The change in the mass of the sample during the deposition was measured in situ. The samples were characterised by elemental analysis of Ti (photocolorimetry) and Cl (mercurimetry), scanning electron microscopy, and energy-dispersive X-ray spectroscopy. In this study, the effect of the temperature (200 °C, 500 °C) and number of synthesis cycles (1–4) on the distribution of titanium oxide structures over a cross-section of silica was investigated, along with the chemical composition and the microstructure of the modified silica samples. All of the deposition steps carried out at 200 °C and 500 °C were self-limiting. Synthesis at 200 °C provided a uniform distribution of titanium oxide structures over a cross-section of silica, and no traces of phase formation were found by scanning electron microscopy. For the samples synthesised at 500 °C, the titanium concentration in the edge of the granule was 1.5 times higher than in the central regions. Titanium dioxide crystals were found on the external surface of the silica modified by four cycles at 500 °C (its concentration was approximately 3.5 wt% of the total titanium content in the sample). On the surface of this sample, oval agglomerates of a higher titanium concentration were observed. The structure of these agglomerates was globular, similar to the structure of the initial silica.

  3. CdS thin films prepared by laser assisted chemical bath deposition

    Energy Technology Data Exchange (ETDEWEB)

    Garcia, L.V.; Mendivil, M.I.; Garcia Guillen, G.; Aguilar Martinez, J.A. [Facultad de Ingenieria Mecanica y Electrica, Universidad Autonoma de Nuevo Leon, Av. Pedro de Alba s/n, Ciudad Universitaria, San Nicolas de los Garza, Nuevo Leon 66450 (Mexico); Krishnan, B. [Facultad de Ingenieria Mecanica y Electrica, Universidad Autonoma de Nuevo Leon, Av. Pedro de Alba s/n, Ciudad Universitaria, San Nicolas de los Garza, Nuevo Leon 66450 (Mexico); CIIDIT – Universidad Autonoma de Nuevo Leon, Apodaca, Nuevo Leon (Mexico); Avellaneda, D.; Castillo, G.A.; Das Roy, T.K. [Facultad de Ingenieria Mecanica y Electrica, Universidad Autonoma de Nuevo Leon, Av. Pedro de Alba s/n, Ciudad Universitaria, San Nicolas de los Garza, Nuevo Leon 66450 (Mexico); Shaji, S., E-mail: sshajis@yahoo.com [Facultad de Ingenieria Mecanica y Electrica, Universidad Autonoma de Nuevo Leon, Av. Pedro de Alba s/n, Ciudad Universitaria, San Nicolas de los Garza, Nuevo Leon 66450 (Mexico); CIIDIT – Universidad Autonoma de Nuevo Leon, Apodaca, Nuevo Leon (Mexico)

    2015-05-01

    Highlights: • CdS thin films by conventional CBD and laser assisted CBD. • Characterized these films using XRD, XPS, AFM, optical and electrical measurements. • Accelerated growth was observed in the laser assisted CBD process. • Improved dark conductivity and good photocurrent response for the LACBD CdS. - Abstract: In this work, we report the preparation and characterization of CdS thin films by laser assisted chemical bath deposition (LACBD). CdS thin films were prepared from a chemical bath containing cadmium chloride, triethanolamine, ammonium hydroxide and thiourea under various deposition conditions. The thin films were deposited by in situ irradiation of the bath using a continuous laser of wavelength 532 nm, varying the power density. The thin films obtained during deposition of 10, 20 and 30 min were analyzed. The changes in morphology, structure, composition, optical and electrical properties of the CdS thin films due to in situ irradiation of the bath were analyzed by atomic force microscopy (AFM), X-ray diffraction (XRD), X-ray photoelectron spectroscopy (XPS) and UV–vis spectroscopy. The thin films obtained by LACBD were nanocrystalline, photoconductive and presented interesting morphologies. The results showed that LACBD is an effective synthesis technique to obtain nanocrystalline CdS thin films having good optoelectronic properties.

  4. CdS thin films prepared by laser assisted chemical bath deposition

    International Nuclear Information System (INIS)

    Highlights: • CdS thin films by conventional CBD and laser assisted CBD. • Characterized these films using XRD, XPS, AFM, optical and electrical measurements. • Accelerated growth was observed in the laser assisted CBD process. • Improved dark conductivity and good photocurrent response for the LACBD CdS. - Abstract: In this work, we report the preparation and characterization of CdS thin films by laser assisted chemical bath deposition (LACBD). CdS thin films were prepared from a chemical bath containing cadmium chloride, triethanolamine, ammonium hydroxide and thiourea under various deposition conditions. The thin films were deposited by in situ irradiation of the bath using a continuous laser of wavelength 532 nm, varying the power density. The thin films obtained during deposition of 10, 20 and 30 min were analyzed. The changes in morphology, structure, composition, optical and electrical properties of the CdS thin films due to in situ irradiation of the bath were analyzed by atomic force microscopy (AFM), X-ray diffraction (XRD), X-ray photoelectron spectroscopy (XPS) and UV–vis spectroscopy. The thin films obtained by LACBD were nanocrystalline, photoconductive and presented interesting morphologies. The results showed that LACBD is an effective synthesis technique to obtain nanocrystalline CdS thin films having good optoelectronic properties

  5. Study of three dimensional germanium islands and ultrathin Si{sub x}Ge{sub 1-x} films grown by chemical vapour deposition on Si(111)-(7 x 7)

    Energy Technology Data Exchange (ETDEWEB)

    Gopalakrishnan, Selvi

    2005-07-15

    This work probed at the atomic level, processes that occur during the Ge three dimensional island formation and on ultrathin Si{sub x}Ge{sub 1-x} epitaxial growth by chemical vapour deposition on the Si(111)-(7 x 7) substrate with the aid of surface probe techniques such as STM and AFM, XPS, as well as TEM imaging of any 3D island formation. This work could essentially be divided into two parts. The first part studied the growth of the strained Ge on Si system with emphasis on the characterisation of the CVD grown three dimensional germanium islands on a standard Si(111)-(7 x 7) substrate as well as on a surface modified Si(111)-(7 x 7) substrate. The characterisation was carried out using a combination of techniques. XPS was used to calculate the effective coverages of deposited germanium, the STM was used to image the top most layers whenever possible and AFM, cross-sectional TEM and HRTEM to image the three dimensional islands. The possible causes of the surface modification were also examined. In the second part of this work the growth morphologies ultrathin Si{sub x}Ge{sub 1-x} layers grown on the Si(111)-(7 x 7) substrate at 750 K where the hydrogen desorption rate from the Si(111) surface is low and at 850 K which was the temperature at which the rate of hydrogen desorption from the Si(111) surface was a maximum were investigated. In addition modelling of ultrathin layer growth was carried out using two existing growth models. (orig.)

  6. A eutectic gold vapour laser

    Science.gov (United States)

    Tou, T. Y.; Cheak, K. E.; Low, K. S.

    This paper presents a eutectic gold vapour laser (EGVL) which uses the eutectic alloy of gold and silicon, Au/3.15Si, as the lasant. It was observed that, at low input power operation, the presence of the silicon vapour could increase the output of the 627.8 nm laser line by (50-60)% when compared with a gold vapour laser (GVL) which uses pure gold as the lasant. The improved laser output for the EGVL may be explained by an increased electron density, as a result of Penning ionization of silicon atoms. However, for higher input power operation, the EGVL showed a slower rate of increase in its laser output power and was overtaken by GVLs at a tube operating temperature of around 1650°C. This may be explained by a lowering of the electron temperature owing to increasing inelastic collisions between the electrons and silicon atoms which, although excited, may not produce additional electrons.

  7. Estimation of vapour pressure and partial pressure of subliming compounds by low-pressure thermogravimetry

    Indian Academy of Sciences (India)

    G V Kunte; Ujwala Ail; P K Ajikumar; A K Tyagi; S A Shivashankar; A M Umarji

    2011-12-01

    A method for the estimation of vapour pressure and partial pressure of subliming compounds under reduced pressure, using rising temperature thermogravimetry, is described in this paper. The method is based on our recently developed procedure to estimate the vapour pressure from ambient pressure thermogravimetric data using Langmuir equation. Using benzoic acid as the calibration standard, vapour pressure–temperature curves are calculated at 80, 160 and 1000 mbar for salicylic acid and vanadyl bis-2,4-pentanedionate, a precursor used for chemical vapour deposition of vanadium oxides. Using a modification of the Langmuir equation, the partial pressure of these materials at different total pressures is also determined as a function of temperature. Such data can be useful for the deposition of multi-metal oxide thin films or doped thin films by chemical vapour deposition (CVD).

  8. Magnetically assisted chemical separation (MACS) process: Preparation and optimization of particles for removal of transuranic elements

    International Nuclear Information System (INIS)

    The Magnetically Assisted Chemical Separation (MACS) process combines the selectivity afforded by solvent extractants with magnetic separation by using specially coated magnetic particles to provide a more efficient chemical separation of transuranic (TRU) elements, other radionuclides, and heavy metals from waste streams. Development of the MACS process uses chemical and physical techniques to elucidate the properties of particle coatings and the extent of radiolytic and chemical damage to the particles, and to optimize the stages of loading, extraction, and particle regeneration. This report describes the development of a separation process for TRU elements from various high-level waste streams. Polymer-coated ferromagnetic particles with an adsorbed layer of octyl(phenyl)-N,N-diisobutylcarbamoylmethylphosphine oxide (CMPO) diluted with tributyl phosphate (TBP) were evaluated for use in the separation and recovery of americium and plutonium from nuclear waste solutions. Due to their chemical nature, these extractants selectively complex americium and plutonium contaminants onto the particles, which can then be recovered from the solution by using a magnet. The partition coefficients were larger than those expected based on liquid[liquid extractions, and the extraction proceeded with rapid kinetics. Extractants were stripped from the particles with alcohols and 400-fold volume reductions were achieved. Particles were more sensitive to acid hydrolysis than to radiolysis. Overall, the optimization of a suitable NMCS particle for TRU separation was achieved under simulant conditions, and a MACS unit is currently being designed for an in-lab demonstration

  9. Performance analysis of solar-assisted chemical heat-pump dryer

    Energy Technology Data Exchange (ETDEWEB)

    Fadhel, M.I. [Solar Energy Research Institute, Universiti Kebangsaan Malaysia, 43600 Bangi, Selangor (Malaysia); Faculty of Engineering and Technology, Multimedia University, Jalan Ayer Keroh Lama, 75450, Melaka (Malaysia); Sopian, K.; Daud, W.R.W. [Solar Energy Research Institute, Universiti Kebangsaan Malaysia, 43600 Bangi, Selangor (Malaysia)

    2010-11-15

    A solar-assisted chemical heat-pump dryer has been designed, fabricated and tested. The performance of the system has been studied under the meteorological conditions of Malaysia. The system consists of four main components: solar collector (evacuated tubes type), storage tank, solid-gas chemical heat pump unit and dryer chamber. A solid-gas chemical heat pump unit consists of reactor, condenser and evaporator. The reaction used in this study (CaCl2-NH{sub 3}). A simulation has been developed, and the predicted results are compared with those obtained from experiments. The maximum efficiency for evacuated tubes solar collector of 80% has been predicted against the maximum experiment of 74%. The maximum values of solar fraction from the simulation and experiment are 0.795 and 0.713, respectively, whereas the coefficient of performance of chemical heat pump (COP{sup h}) maximum values 2.2 and 2 are obtained from simulation and experiments, respectively. The results show that any reduction of energy at condenser as a result of the decrease in solar radiation will decrease the coefficient of performance of chemical heat pump as well as decrease the efficiency of drying. (author)

  10. Chemicals loading in acetylated bamboo assisted by supercritical CO2 based on phase equilibrium data

    Science.gov (United States)

    Silviana, Petermann, M.

    2015-12-01

    Indonesia has a large tropical forest. However, the deforestation still appears annually and vastly. This reason drives a use of bamboo as wood alternative. Recently, there are many modifications of bamboo in order to prolong the shelf life. Unfortunately, the processes need more chemicals and time. Based on wood modification, esterifying of bamboo was undertaken in present of a dense gas, i.e. supercritical CO2. Calculation of chemicals loading referred to ASTM D1413-99 by using the phase equilibrium data at optimum condition by a statistical design. The results showed that the acetylation of bamboo assisted by supercritical CO2 required 14.73 kg acetic anhydride/m3 of bamboo for a treatment of one hour.

  11. Laser assisted chemically shaped unstable resonator, for high power coherent laser diodes

    International Nuclear Information System (INIS)

    Laser assisted chemical etching (LACE) is used to etch a continuous graded channel, set inside a wide stripe graded-index and separate confinement heterostructure (GRIN-SCH) for laser diodes, grown by metal organic chemical vapor deposition (MOCVD). After a procedure of growing-etching-regrowing, a two-part waveguide is formed inside such modified structure, that is characterized by a negative change in the lateral effective refractive index (ERI). This effects the cavity to work as an unstable resonator. Procedures on the photo etching process are described, including the GaAs photochemistry and the optical system, with special emphasis on the fabrication of the approximately parabolic channels, as this represents a novel step. We call the cavity fabricated by this method, the shaped unstable resonator (SHUR). (Author)

  12. Graphene-Assisted Chemical Etching of Silicon Using Anodic Aluminum Oxides as Patterning Templates.

    Science.gov (United States)

    Kim, Jungkil; Lee, Dae Hun; Kim, Ju Hwan; Choi, Suk-Ho

    2015-11-01

    We first report graphene-assisted chemical etching (GaCE) of silicon by using patterned graphene as an etching catalyst. Chemical-vapor-deposition-grown graphene transferred on a silicon substrate is patterned to a mesh with nanohole arrays by oxygen plasma etching using an anodic- aluminum-oxide etching mask. The prepared graphene mesh/silicon is immersed in a mixture solution of hydrofluoric acid and hydro peroxide with various molecular fractions at optimized temperatures. The silicon underneath graphene mesh is then selectively etched to form aligned nanopillar arrays. The morphology of the nanostructured silicon can be controlled to be smooth or porous depending on the etching conditions. The experimental results are systematically discussed based on possible mechanisms for GaCE of Si. PMID:26473800

  13. Vapour Pressure of Diethyl Phthalate

    Czech Academy of Sciences Publication Activity Database

    Roháč, V.; Růžička, K.; Růžička, V.; Zaitsau, D. H.; Kabo, G. J.; Diky, V.; Aim, Karel

    2004-01-01

    Roč. 36, č. 11 (2004), s. 929-937. ISSN 0021-9614 Institutional research plan: CEZ:AV0Z4072921 Keywords : vapour pressure * diethyl phthalate * correlation Subject RIV: CF - Physical ; Theoretical Chemistry Impact factor: 1.144, year: 2004

  14. Microwave assisted rapid growth of Mg(OH)2 nanosheet networks for ethanol chemical sensor application

    International Nuclear Information System (INIS)

    Highlights: ► A facile microwave-assisted synthesis and characterizations of magnesium hydroxide (Mg(OH)2) nanosheet networks. ► Fabrication of ethanol sensor based on (Mg(OH)2) nanosheet networks. ► Good sensitivity (∼3.991 μA cm−2 mM−1) and lower detection limit (5 μM). ► This research opens a way to utilize Mg(OH)2 nanostructures for chemical sensors applications. - Abstract: This paper reports a facile microwave-assisted synthesis of magnesium hydroxide (Mg(OH)2) nanosheet networks and their utilization for the fabrication of efficient ethanol chemical sensor. The synthesized nanosheets networks were characterized in terms of their morphological, structural and optical properties using various analysis techniques such as field emission scanning electron microscopy (FESEM), X-ray diffraction pattern (XRD), Fourier transform infrared (FTIR) and UV–Vis spectroscopy. The detailed morphological and structural investigations reveal that the synthesized (Mg(OH)2) products are nanosheet networks, grown in high density, and possessing hexagonal crystal structure. The optical band gap of as-synthesized Mg(OH)2 nanosheet networks was examined by UV–Vis absorption spectrum, and found to be 5.76 eV. The synthesized nanosheet networks were used as supporting matrices for the fabrication of I–V technique based efficient ethanol chemical sensor. The fabricated ethanol sensor based on nanosheet networks exhibits good sensitivity (∼3.991 μA cm−2 mM−1) and lower detection limit (5 μM), with linearity (R = 0.9925) in short response time (10.0 s). This work demonstrate that the simply synthesized Mg(OH)2 nanosheet networks can effectively be used for the fabrication of efficient ethanol chemical sensors.

  15. Graphene-assisted growth of high-quality AlN by metalorganic chemical vapor deposition

    Science.gov (United States)

    Zeng, Qing; Chen, Zhaolong; Zhao, Yun; Wei, Tongbo; Chen, Xiang; Zhang, Yun; Yuan, Guodong; Li, Jinmin

    2016-08-01

    High-quality AlN films were directly grown on graphene/sapphire substrates by metalorganic chemical vapor deposition (MOCVD). The graphene layers were directly grown on sapphire by atmospheric-pressure chemical vapor deposition (APCVD), a low-cost catalyst-free method. We analyzed the influence of the graphene layer on the nucleation of AlN at the initial stage of growth and found that sparse AlN grains on graphene grew and formed a continuous film via lateral coalescence. Graphene-assisted AlN films are smooth and continuous, and the full width at half maximum (FWHM) values for (0002) and (10\\bar{1}2) reflections are 360 and 622.2 arcsec, which are lower than that of the film directly grown on sapphire. The high-resolution TEM images near the AlN/sapphire interface for graphene-assisted AlN films clearly show the presence of graphene, which kept its original morphology after the 1200 °C growth of AlN.

  16. Aerosol-Assisted Chemical Vapor Deposited Thin Films for Space Photovoltaics

    Science.gov (United States)

    Hepp, Aloysius F.; McNatt, Jeremiah; Dickman, John E.; Jin, Michael H.-C.; Banger, Kulbinder K.; Kelly, Christopher V.; AquinoGonzalez, Angel R.; Rockett, Angus A.

    2006-01-01

    Copper indium disulfide thin films were deposited via aerosol-assisted chemical vapor deposition using single source precursors. Processing and post-processing parameters were varied in order to modify morphology, stoichiometry, crystallography, electrical properties, and optical properties in order to optimize device-quality material. Growth at atmospheric pressure in a horizontal hot-wall reactor at 395 C yielded best device films. Placing the susceptor closer to the evaporation zone and flowing a more precursor-rich carrier gas through the reactor yielded shinier, smoother, denser-looking films. Growth of (112)-oriented films yielded more Cu-rich films with fewer secondary phases than growth of (204)/(220)-oriented films. Post-deposition sulfur-vapor annealing enhanced stoichiometry and crystallinity of the films. Photoluminescence studies revealed four major emission bands (1.45, 1.43, 1.37, and 1.32 eV) and a broad band associated with deep defects. The highest device efficiency for an aerosol-assisted chemical vapor deposited cell was 1.03 percent.

  17. The metal-organic chemical vapour deposition and optical studies of ZnSe1-xTex and CdS1-xTex epilayers and tellurium doped ZnS/CdS superlattices

    International Nuclear Information System (INIS)

    This work sought to achieve efficient room temperature blue photoluminescence (PL) from II-VI superlattices by incorporation of tellurium (Te) exciton traps into the wells. In preparation for this, the growth and optical properties of ZnSe1-xTex and CdS1-xTex dilute alloy epilayers were first investigated. The epilayer and superlattice samples were prepared using atmospheric pressure metal-organic chemical vapour deposition (AP-MOCVD). The dependence of Te concentration (x) on the growth precursors and conditions used was investigated. This led to an understanding of the relative stabilities of the precursors used, as well as the best growth conditions required to control Te concentrations. A diffusion doping technique was also developed for growth of low Te concentration ZnSe:Te and CdS:Te epilayers. The corresponding concentration and PL results for these layers were used to confirm the expected microscopic nature of the Te centres. The low temperature (1.8K) PL emission intensities from ZnSe1-xTex and CdS1-xTex epilayers were intense, but found to decrease rapidly with increasing temperature despite the large exciton trapping energies. A theoretical capture cross section model was thus developed to explain these observations. In addition, application of this model allowed the microscopic size of Te centres to be obtained, thereby explaining the different appearance of corresponding PL bands. In view of the more persistent emissions from CdS1-xTex layers compared with those of ZnSe1-xTex, it was decided to grow Te doped ZnS/CdS:Te superlattices. The ZnS/CdS:Te superlattices were found give the intended blue emission. However, structural disruption in these superlattice samples led to quenching of this emission at room temperature. Finally, it was found that the degree of electron-phonon coupling to Te centres was less in superlattice structures compared to epilayers. (author)

  18. Low Temperature Growth of In2O3and InN Nanocrystals on Si(111 via Chemical Vapour Deposition Based on the Sublimation of NH4Cl in In

    Directory of Open Access Journals (Sweden)

    Tsokkou Demetra

    2009-01-01

    Full Text Available Abstract Indium oxide (In2O3 nanocrystals (NCs have been obtained via atmospheric pressure, chemical vapour deposition (APCVD on Si(111 via the direct oxidation of In with Ar:10% O2at 1000 °C but also at temperatures as low as 500 °C by the sublimation of ammonium chloride (NH4Cl which is incorporated into the In under a gas flow of nitrogen (N2. Similarly InN NCs have also been obtained using sublimation of NH4Cl in a gas flow of NH3. During oxidation of In under a flow of O2the transfer of In into the gas stream is inhibited by the formation of In2O3around the In powder which breaks up only at high temperatures, i.e.T > 900 °C, thereby releasing In into the gas stream which can then react with O2leading to a high yield formation of isolated 500 nm In2O3octahedrons but also chains of these nanostructures. No such NCs were obtained by direct oxidation forT G < 900 °C. The incorporation of NH4Cl in the In leads to the sublimation of NH4Cl into NH3and HCl at around 338 °C which in turn produces an efficient dispersion and transfer of the whole In into the gas stream of N2where it reacts with HCl forming primarily InCl. The latter adsorbs onto the Si(111 where it reacts with H2O and O2leading to the formation of In2O3nanopyramids on Si(111. The rest of the InCl is carried downstream, where it solidifies at lower temperatures, and rapidly breaks down into metallic In upon exposure to H2O in the air. Upon carrying out the reaction of In with NH4Cl at 600 °C under NH3as opposed to N2, we obtain InN nanoparticles on Si(111 with an average diameter of 300 nm.

  19. Use of computer-assisted prediction of toxic effects of chemical substances

    International Nuclear Information System (INIS)

    The current revision of the European policy for the evaluation of chemicals (REACH) has lead to a controversy with regard to the need of additional animal safety testing. To avoid increases in animal testing but also to save time and resources, alternative in silico or in vitro tests for the assessment of toxic effects of chemicals are advocated. The draft of the original document issued in 29th October 2003 by the European Commission foresees the use of alternative methods but does not give further specification on which methods should be used. Computer-assisted prediction models, so-called predictive tools, besides in vitro models, will likely play an essential role in the proposed repertoire of 'alternative methods'. The current discussion has urged the Advisory Committee of the German Toxicology Society to present its position on the use of predictive tools in toxicology. Acceptable prediction models already exist for those toxicological endpoints which are based on well-understood mechanism, such as mutagenicity and skin sensitization, whereas mechanistically more complex endpoints such as acute, chronic or organ toxicities currently cannot be satisfactorily predicted. A potential strategy to assess such complex toxicities will lie in their dissection into models for the different steps or pathways leading to the final endpoint. Integration of these models should result in a higher predictivity. Despite these limitations, computer-assisted prediction tools already today play a complementary role for the assessment of chemicals for which no data is available or for which toxicological testing is impractical due to the lack of availability of sufficient compounds for testing. Furthermore, predictive tools offer support in the screening and the subsequent prioritization of compound for further toxicological testing, as expected within the scope of the European REACH program. This program will also lead to the collection of high-quality data which will broaden the

  20. The Research on Atmospheric Pressure Water Vapour Plasma Generation and Application for the Destruction of Wastes

    Directory of Open Access Journals (Sweden)

    Viktorija Grigaitiene

    2013-01-01

    Full Text Available In the Lithuanian Energy Institute an experimental atmospheric pressure Ar/water vapour plasma torch has been designed and tested. The power of plasma torch was estimated 40 ÷ 69 kW, the mean temperature of plasma jet at the exhaust nozzle was 2300÷2900K. The chemical compositionof water vapour plasma was established from the emission spectrum lines at 300 ÷ 800nm range. The main species observed in Ar/water vapour plasma were: Ar, OH, H, O, Cu. The experiments on water vapour steam reforming were performed. The results confirmed that water vapour plasma has the unique properties – high enthalpy and environmentally friendly conditions. It could be employed for environmental purposes such as destruction of wastes into simple molecules or conversion to synthetic gas.

  1. Microstructural, chemical and textural characterization of ZnO nanorods synthesized by aerosol assisted chemical vapor deposition

    Energy Technology Data Exchange (ETDEWEB)

    Sáenz-Trevizo, A.; Amézaga-Madrid, P.; Fuentes-Cobas, L.; Pizá-Ruiz, P.; Antúnez-Flores, W.; Ornelas-Gutiérrez, C. [Centro de Investigación en Materiales Avanzados, S.C., Chihuahua, Chihuahua 31109 (Mexico); Pérez-García, S.A. [Centro de Investigación en Materiales Avanzados, S.C., Unidad Monterrey, Apodaca, Nuevo León 66600 (Mexico); Miki-Yoshida, M., E-mail: mario.miki@cimav.edu.mx [Centro de Investigación en Materiales Avanzados, S.C., Chihuahua, Chihuahua 31109 (Mexico)

    2014-12-15

    ZnO nanorods were synthesized by aerosol assisted chemical vapor deposition onto TiO{sub 2} covered borosilicate glass substrates. Deposition parameters were optimized and kept constant. Solely the effect of different nozzle velocities on the growth of ZnO nanorods was evaluated in order to develop a dense and uniform structure. The crystalline structure was characterized by conventional X-ray diffraction in grazing incidence and Bragg–Brentano configurations. In addition, two-dimensional grazing incidence synchrotron radiation diffraction was employed to determine the preferred growth direction of the nanorods. Morphology and growth characteristics analyzed by electron microscopy were correlated with diffraction outcomes. Chemical composition was established by X-ray photoelectron spectroscopy. X-ray diffraction results and X-ray photoelectron spectroscopy showed the presence of wurtzite ZnO and anatase TiO{sub 2} phases. Morphological changes noticed when the deposition velocity was lowered to the minimum, indicated the formation of relatively vertically oriented nanorods evenly distributed onto the TiO{sub 2} buffer film. By coupling two-dimensional X-ray diffraction and computational modeling with ANAELU it was proved that a successful texture determination was achieved and confirmed by scanning electron microscopy analysis. Texture analysis led to the conclusion of a preferred growth direction in [001] having a distribution width Ω = 20° ± 2°. - Highlights: • Uniform and pure single-crystal ZnO nanorods were obtained by AACVD technique. • Longitudinal and transversal axis parallel to the [001] and [110] directions, respectively. • Texture was determined by 2D synchrotron diffraction and electron microscopy analysis. • Nanorods have its [001] direction distributed close to the normal of the substrate. • Angular spread about the preferred orientation is 20° ± 2°.

  2. Program of technical assistance to the organization for the prohibition of chemical weapons, informal report

    Energy Technology Data Exchange (ETDEWEB)

    1995-01-01

    Currently, U.S. organizations provide technical support to the U.S. Delegation for its work as part of the Preparatory Commission (PrepCom) of the Organization for the Prohibition of Chemical Weapons (OPCW) in The Hague. The current efforts of the PrepCom are focussed on preparations for the Entry-Into-Force (EIF) of the Convention on the Prohibition of the Development, Production, Stockpiling and Use of Chemical Weapons (often referred to as the {open_quotes}Chemical Weapons Convention{close_quotes} (CWC)). EIF of the CWC is expected in 1995, and shortly thereafter the PrepCom will cease to exist, with the OPCW taking over responsibilities under the CWC. A U.S. program of technical assistance to the OPCW for its verification responsibilities may be created as part of U.S. policy objectives after EIF of the CWC. In the summary below, comments by participants are presented in Square Brackets Some of the same points arose several times during the discussions; they are grouped together under the most pertinent heading.

  3. The Vapour Pressure of Plutonium

    International Nuclear Information System (INIS)

    The vapour pressure of liquid plutonium has been determined over the temperature range 1100 to 1800°K by the Knudsen effusion method. The least-squares equation which fits the data is log10p(atm) = -17 420/T(°K) + 4.913. The standard deviation corresponds to about ±10% in the pressures calculated from this equation. The heat of vaporization computed from the temperature dependence of the experimental data is ΔH0298 = 82.3 kcal/g-at. The heat computed by combining independent entropy and heat capacity data with the present measurements is ΔH0298 = 82.1 kcal/g-at. Effects of oxygen upon the volatility of liquid plutonium were sought by comparing the vapour pressures observed with the liquid in contact with tantalum, tantalum carbide, magnesia, and plutonium sesquioxide. No differences were found. In addition, the vapour pressure was measured with different degrees of vacuum in the system. No effect was found here either, except that in very poor vacuums a surface film of oxide apparently formed and reduced the volatility by about a factor of 2. (author)

  4. Sistema RTP: uma técnica poderosa para o monitoramento da formação de nanotubos de carbono durante o processo por deposição de vapor químico TPR system: a powerful technique to monitor carbon nanotube formation during chemical vapour deposition

    Directory of Open Access Journals (Sweden)

    Juliana Cristina Tristão

    2010-01-01

    Full Text Available In this work, a TPR (Temperature Programmed Reduction system is used as a powerful tool to monitor carbon nanotubes production during CVD (Chemical Vapour Deposition, The experiments were carried out using catalyst precursors based on Fe-Mo supported on Al2O3 and methane as carbon source. As methane reacts on the Fe metal surface, carbon is deposited and H2 is produced. TPR is very sensitive to the presence of H2 and affords information on the temperature where catalyst is active to form different forms of carbon, the reaction kinetics, the catalyst deactivation and carbon yields.

  5. GaN nanowire arrays by a patterned metal-assisted chemical etching

    Science.gov (United States)

    Wang, K. C.; Yuan, G. D.; Wu, R. W.; Lu, H. X.; Liu, Z. Q.; Wei, T. B.; Wang, J. X.; Li, J. M.; Zhang, W. J.

    2016-04-01

    We developed an one-step and two-step metal-assisted chemical etching method to produce self-organized GaN nanowire arrays. In one-step approach, GaN nanowire arrays are synthesized uniformly on GaN thin film surface. However, in a two-step etching processes, GaN nanowires are formed only in metal uncovered regions, and GaN regions with metal-covering show nano-porous sidewalls. We propose that nanowires and porous nanostructures are tuned by sufficient and limited etch rate, respectively. PL spectra shows a red-shift of band edge emission in GaN nanostructures. The formation mechanism of nanowires was illustrated by two separated electrochemical reactions occur simultaneously. The function of metals and UV light was illustrated by the scheme of potential relationship between energy bands in Si, GaN and standard hydrogen electrode potential of solution and metals.

  6. Biological functionalization and patterning of porous silicon prepared by Pt-assisted chemical etching

    International Nuclear Information System (INIS)

    Porous silicon fabricated via Pt-assisted chemical etching of p-type Si (1 0 0) in 1:1:1 EtOH/HF/H2O2 solution possesses a longer durability in air and in aqueous media than anodized one, which is advantageous for biomedical applications. Its surface SiHx (x = 1 and 2) species can react with 10-undecylenic acid completely under microwave irradiation, and subsequent derivatizations of the end carboxylic acid result in affinity capture of proteins. We applied two approaches to produce protein microarrays: photolithography and spotting. The former provides a homogeneous microarray with a very low fluorescence background, while the latter presents an inhomogeneous microarray with a high noise background.

  7. Deep and vertical silicon bulk micromachining using metal assisted chemical etching

    International Nuclear Information System (INIS)

    In this paper, a newfound and simple silicon bulk micromachining process based on metal-assisted chemical etching (MaCE) is proposed which opens a whole new field of research in MEMS technology. This method is anisotropic and by controlling the etching parameters, deep vertical etching, relative to substrate surface, can be achieved in micrometer size for 〈1 0 0〉 oriented Si wafer. By utilizing gold as a catalyst and a photoresist layer as the single mask layer for etching, 60 µm deep gyroscope micromachined structures have been fabricated for 2 µm features. The results indicate that MaCE could be the only wet etching method comparable to conventional dry etching recipes in terms of achievable etch rate, aspect ratio, verticality and side wall roughness. It also does not need a vacuum chamber and the other costly instruments associated with dry etching techniques. (paper)

  8. Bilayer–metal assisted chemical etching of silicon microwire arrays for photovoltaic applications

    Directory of Open Access Journals (Sweden)

    R. W. Wu

    2016-02-01

    Full Text Available Silicon microwires with lateral dimension from 5 μm to 20 μm and depth as long as 20 μm are prepared by bilayer metal assisted chemical etching (MaCE. A bilayer metal configuration (Metal 1 / Metal 2 was applied to assist etching of Si where metal 1 acts as direct catalyst and metal 2 provides mechanical support. Different metal types were investigated to figure out the influence of metal catalyst on morphology of etched silicon. We find that silicon microwires with vertical side wall are produced when we use Ag/Au bilayer, while cone–like and porous microwires formed when Pt/Au is applied. The different micro-/nano-structures in as-etched silicon are demonstrated to be due to the discrepancy of work function of metal catalyst relative to Si. Further, we constructed a silicon microwire arrays solar cells in a radial p–n junction configurations in a screen printed aluminum paste p–doping process.

  9. Bilayer-metal assisted chemical etching of silicon microwire arrays for photovoltaic applications

    Science.gov (United States)

    Wu, R. W.; Yuan, G. D.; Wang, K. C.; Wei, T. B.; Liu, Z. Q.; Wang, G. H.; Wang, J. X.; Li, J. M.

    2016-02-01

    Silicon microwires with lateral dimension from 5 μm to 20 μm and depth as long as 20 μm are prepared by bilayer metal assisted chemical etching (MaCE). A bilayer metal configuration (Metal 1 / Metal 2) was applied to assist etching of Si where metal 1 acts as direct catalyst and metal 2 provides mechanical support. Different metal types were investigated to figure out the influence of metal catalyst on morphology of etched silicon. We find that silicon microwires with vertical side wall are produced when we use Ag/Au bilayer, while cone-like and porous microwires formed when Pt/Au is applied. The different micro-/nano-structures in as-etched silicon are demonstrated to be due to the discrepancy of work function of metal catalyst relative to Si. Further, we constructed a silicon microwire arrays solar cells in a radial p-n junction configurations in a screen printed aluminum paste p-doping process.

  10. Triangle pore arrays fabricated on Si (111) substrate by sphere lithography combined with metal-assisted chemical etching and anisotropic chemical etching

    OpenAIRE

    Asoh, Hidetaka; Fujihara, Kosuke; Ono, Sachiko

    2012-01-01

    The morphological change of silicon macropore arrays formed by metal-assisted chemical etching using shape-controlled Au thin film arrays was investigated during anisotropic chemical etching in tetramethylammonium hydroxide (TMAH) aqueous solution. After the deposition of Au as the etching catalyst on (111) silicon through a honeycomb mask prepared by sphere lithography, the specimens were etched in a mixed solution of HF and H2O2 at room temperature, resulting in the formation of ordered mac...

  11. Formation of SiC Nanostruture Using Hexamethyldisiloxane During Plasma-Assisted Hot-Filament Chemical Vapor Deposition

    International Nuclear Information System (INIS)

    Growth of SiC nanowires in plasma-assisted hot filament chemical-vapor-deposition by using hexamethyldisiloxane (HMDSO) as the gas source is reported. The SiC nanowires (SiC-NWs) grew on Au-coated silicon substrate with core-shell structure, where the core consisted of polycrystalline SiC grains and the shell exhibited amorphous structure. The featured structures such as cones, polyhedrons, ball-liked particles were observed in the case without plasma assistance. The underlying mechanism for the growth of nanostructures was also discussed. The high chemical activity induced by the plasma process plays an important role in using monomer to generate nanostructure.

  12. Condensation of water vapour on moss-dominated biological soil crust, NW China

    Indian Academy of Sciences (India)

    Xin-Ping Wang; Yan-Xia Pan; Rui Hu; Ya-Feng Zhang; Hao Zhang

    2014-03-01

    Characteristics of water vapour condensation, including the onset, duration, and amount of water vapour condensation on moss-dominated biological soil crust (BSC) and dune sand were studied under simulated conditions with varying air temperature and relative humidity. The simulations were performed in a plant growth chamber using an electronic balance recording the weight of condensation. There was a positive linear correlation between the water vapour condensation and relative humidity while the mean temperature was negatively linearly related to amounts of water vapour condensation for both soil surfaces. The amount of water vapour condensation on BSC and dune sand can be described by the difference between air temperature and dew point with an exponential function, indicating that when the difference of air temperature and dew point exceeds a value of 35.3°C, there will be zero water vapour condensed on BSC. In contrast, when the difference of air temperature and dew point exceeds a value of 20.4°C, the water vapour condensation will be zero for dune sand. In general, when the air is fully saturated with water and the dew point is equal to the current air temperature, the water vapour condensed on BSC attained its maximum value of 0.398 mm, whereas it was 0.058 mm for dune sand. In comparison, water vapour condensed on BSC was at a relatively high temperature and low relative humidity, while we did not detect water vapour condensation on the dune sand under the similar conditions. Physical and chemical analyses of the samples pointed to a greater porosity, high content of fine particles, and high salinity for BSC compared to the dune sand. These results highlight that soil physicochemical properties are the likely factors influencing the mechanism of water vapour condensation under specific meteorological conditions, as onset was earlier and the duration was longer for water vapour condensation on BSC in comparison with that of dune sand. This contributed to

  13. Water vapour permeability of clay bricks

    OpenAIRE

    Dondi, M.; Principi, P.; Raimondo, M.; Zanarini, G.

    2003-01-01

    The water vapour permeability of clay bricks has been experimentally measured in order to draw a representative outline of industrial products without pore-forming additives. The correlations between water vapour permeability and the main compositional and microstructural parameters of both bricks and clay bodies have been investigated. A statistical model was set up in order to predict with reasonable precision and reliability, the water vapour permeability on the basis of open porosity, bul...

  14. Towards outperforming conventional sensor arrays with fabricated individual photonic vapour sensors inspired by Morpho butterflies

    Science.gov (United States)

    Potyrailo, Radislav A.; Bonam, Ravi K.; Hartley, John G.; Starkey, Timothy A.; Vukusic, Peter; Vasudev, Milana; Bunning, Timothy; Naik, Rajesh R.; Tang, Zhexiong; Palacios, Manuel A.; Larsen, Michael; Le Tarte, Laurie A.; Grande, James C.; Zhong, Sheng; Deng, Tao

    2015-09-01

    Combining vapour sensors into arrays is an accepted compromise to mitigate poor selectivity of conventional sensors. Here we show individual nanofabricated sensors that not only selectively detect separate vapours in pristine conditions but also quantify these vapours in mixtures, and when blended with a variable moisture background. Our sensor design is inspired by the iridescent nanostructure and gradient surface chemistry of Morpho butterflies and involves physical and chemical design criteria. The physical design involves optical interference and diffraction on the fabricated periodic nanostructures and uses optical loss in the nanostructure to enhance the spectral diversity of reflectance. The chemical design uses spatially controlled nanostructure functionalization. Thus, while quantitation of analytes in the presence of variable backgrounds is challenging for most sensor arrays, we achieve this goal using individual multivariable sensors. These colorimetric sensors can be tuned for numerous vapour sensing scenarios in confined areas or as individual nodes for distributed monitoring.

  15. Fission product vapour - aerosol interactions in the containment: simulant fuel studies

    International Nuclear Information System (INIS)

    Experiments have been conducted in the Falcon facility to study the interaction of fission product vapours released from simulant fuel samples with control rod aerosols. The aerosols generated from both the control rod and fuel sample were chemically distinct and had different deposition characteristics. Extensive interaction was observed between the fission product vapours and the control rod aerosol. The two dominant mechanisms were condensation of the vapours onto the aerosol, and chemical reactions between the two components; sorption phenomena were believed to be only of secondary importance. The interaction of fission product vapours and reactor materials aerosols could have a major impact on the transport characteristics of the radioactive emission from a degrading core. (author)

  16. Charge Exchange Reaction in Dopant-Assisted Atmospheric Pressure Chemical Ionization and Atmospheric Pressure Photoionization

    Science.gov (United States)

    Vaikkinen, Anu; Kauppila, Tiina J.; Kostiainen, Risto

    2016-04-01

    The efficiencies of charge exchange reaction in dopant-assisted atmospheric pressure chemical ionization (DA-APCI) and dopant-assisted atmospheric pressure photoionization (DA-APPI) mass spectrometry (MS) were compared by flow injection analysis. Fourteen individual compounds and a commercial mixture of 16 polycyclic aromatic hydrocarbons were chosen as model analytes to cover a wide range of polarities, gas-phase ionization energies, and proton affinities. Chlorobenzene was used as the dopant, and methanol/water (80/20) as the solvent. In both techniques, analytes formed the same ions (radical cations, protonated molecules, and/or fragments). However, in DA-APCI, the relative efficiency of charge exchange versus proton transfer was lower than in DA-APPI. This is suggested to be because in DA-APCI both dopant and solvent clusters can be ionized, and the formed reagent ions can react with the analytes via competing charge exchange and proton transfer reactions. In DA-APPI, on the other hand, the main reagents are dopant-derived radical cations, which favor ionization of analytes via charge exchange. The efficiency of charge exchange in both DA-APPI and DA-APCI was shown to depend heavily on the solvent flow rate, with best efficiency seen at lowest flow rates studied (0.05 and 0.1 mL/min). Both DA-APCI and DA-APPI showed the radical cation of chlorobenzene at 0.05-0.1 mL/min flow rate, but at increasing flow rate, the abundance of chlorobenzene M+. decreased and reagent ion populations deriving from different gas-phase chemistry were recorded. The formation of these reagent ions explains the decreasing ionization efficiency and the differences in charge exchange between the techniques.

  17. A group contribution method for estimating the vapour pressures of α-pinene oxidation products

    OpenAIRE

    J. F. Müller; Capouet, M.

    2005-01-01

    A prediction method based on group contribution principles is proposed for estimating the vapour pressure of α-pinene oxidation products. Temperature dependent contributions are provided for the following chemical groups: carbonyl, nitrate, hydroxy, hydroperoxide, acyl peroxy nitrate and acid. On the basis of observed vapour pressure differences between isomers of diols and dinitrates, a simple refinement is introduced in the method, which allows to account for the influence of the subs...

  18. Development of aerosol assisted chemical vapor deposition for thin film fabrication

    Science.gov (United States)

    Maulana, Dwindra Wilham; Marthatika, Dian; Panatarani, Camellia; Mindara, Jajat Yuda; Joni, I. Made

    2016-02-01

    Chemical vapor deposition (CVD) is widely used to grow a thin film applied in many industrial applications. This paper report the development of an aerosol assisted chemical vapor deposition (AACVD) which is one of the CVD methods. Newly developed AACVD system consists of a chamber of pyrex glass, two wire-heating elements placed to cover pyrex glass, a substrate holder, and an aerosol generator using an air brush sprayer. The temperature control system was developed to prevent condensation on the chamber walls. The control performances such as the overshoot and settling time were obtained from of the developed temperature controller. Wire-heating elements were controlled at certain setting value to heat the injected aerosol to form a thin film in the substrate. The performance of as-developed AACVD system tested to form a thin film where aerosol was sprayed into the chamber with a flow rate of 7 liters/minutes, and vary in temperatures and concentrations of precursor. The temperature control system have an overshoot around 25 °C from the desired set point temperature, very small temperature ripple 2 °C and a settling time of 20 minutes. As-developed AACVD successfully fabricated a ZnO thin film with thickness of below 1 µm. The performances of system on formation of thin films influenced by the generally controlled process such as values of setting temperature and concentration where the aerosol flow rate was fixed. Higher temperature was applied, the more uniform ZnO thin films were produced. In addition, temperature of the substrate also affected on surface roughness of the obtained films, while concentration of ZnO precursor determined the thickness of produce films. It is concluded that newly simple AACVD can be applied to produce a thin film.

  19. Etchant wettability in bulk micromachining of Si by metal-assisted chemical etching

    Science.gov (United States)

    Yoon, Sung-Soo; Lee, Yeong Bahl; Khang, Dahl-Young

    2016-05-01

    Wet bulk micromachining of Si by metal-assisted chemical etching (MaCE) has successfully been demonstrated. Based on the mechanism of defective etching results from Ag and Au metal catalyst experiments, the wettability of etchant solution, in addition to metal type, has been found to have profound effect on the etching process. Addition of low surface tension co-solvent, ethanol in this work, into conventional etchant formulation has enabled complete wetting of etchant on surface, which prevents hydrogen bubble attachment on sample surface during the etching. The complete elimination of bubble attachment guarantees very uniform etch rate on all over the sample surface, and thus prevents premature fragmentation/rupture of catalyst metal layer. Under the optimized etching conditions, the MaCE could be done for up to 12 h without any noticeable film rupture and thus etching defects. Thanks to very smooth surface of the etched patterns, conformal contact and direct bonding of elastomer on such surface has been easily accomplished. The method demonstrated here can pave the way for application of simple, low-cost MaCE process in the bulk micromachining of Si for various applications.

  20. Aerosol assisted chemical vapor deposition using nanoparticle precursors: a route to nanocomposite thin films.

    Science.gov (United States)

    Palgrave, Robert G; Parkin, Ivan P

    2006-02-01

    Gold nanoparticle and gold/semiconductor nanocomposite thin films have been deposited using aerosol assisted chemical vapor deposition (CVD). A preformed gold colloid in toluene was used as a precursor to deposit gold films onto silica glass. These nanoparticle films showed the characteristic plasmon absorption of Au nanoparticles at 537 nm, and scanning electron microscopic (SEM) imaging confirmed the presence of individual gold particles. Nanocomposite films were deposited from the colloid concurrently with conventional CVD precursors. A film of gold particles in a host tungsten oxide matrix resulted from co-deposition with [W(OPh)(6)], while gold particles in a host titania matrix resulted from co-deposition with [Ti(O(i)Pr)(4)]. The density of Au nanoparticles within the film could be varied by changing the Au colloid concentration in the original precursor solution. Titania/gold composite films were intensely colored and showed dichromism: blue in transmitted light and red in reflected light. They showed metal-like reflection spectra and plasmon absorption. X-ray photoelectron spectroscopy and energy-dispersive X-ray analysis confirmed the presence of metallic gold, and SEM imaging showed individual Au nanoparticles embedded in the films. X-ray diffraction detected crystalline gold in the composite films. This CVD technique can be readily extended to produce other nanocomposite films by varying the colloids and precursors used, and it offers a rapid, convenient route to nanoparticle and nanocomposite thin films. PMID:16448130

  1. Metal-assisted chemical etching of Ge surface and its effect on photovoltaic devices

    Science.gov (United States)

    Lee, Seunghyo; Choo, Hyeokseong; Kim, Changheon; Oh, Eunseok; Seo, Dongwan; Lim, Sangwoo

    2016-05-01

    Ge surfaces were etched by means of metal-assisted chemical etching (MaCE). The behavior of the MaCE reaction in diluted H2O2 was compared with that of a conventional etchant of HF/H2O2/H2O mixture (FPM). Herein we first report that a pyramidal structure on Ge (0 0 1) can be prepared by MaCE in dilute H2O2 solution, without the use of HF. Contrastingly, an octagonal trench structure was prepared by 4/5/1 FPM treatment of Ge (0 0 1) surface. This octagonal structure consisted of a square base, four large facets connected to the base, and other four small facets adjacent to the four large facets, which were considered to be (0 0 1), {1 1 0}, and {1 1 1}, respectively. The octagonal trench was formed as a result of the difference in etch rate of Ge depending on the orientation: {1 0 0} > {1 1 0} > {1 1 1}. Ge surfaces treated by MaCE exhibited improved solar cell efficiency due to their improved light absorption, which led to significant increases in the cells' short circuit current and fill factor. The results suggest that optimized MaCE procedures can be an effective method to improve the performance of Ge-based photovoltaic devices.

  2. Ultralight boron nitride aerogels via template-assisted chemical vapor deposition

    Science.gov (United States)

    Song, Yangxi; Li, Bin; Yang, Siwei; Ding, Guqiao; Zhang, Changrui; Xie, Xiaoming

    2015-05-01

    Boron nitride (BN) aerogels are porous materials with a continuous three-dimensional network structure. They are attracting increasing attention for a wide range of applications. Here, we report the template-assisted synthesis of BN aerogels by catalyst-free, low-pressure chemical vapor deposition on graphene-carbon nanotube composite aerogels using borazine as the B and N sources with a relatively low temperature of 900 °C. The three-dimensional structure of the BN aerogels was achieved through the structural design of carbon aerogel templates. The BN aerogels have an ultrahigh specific surface area, ultralow density, excellent oil absorbing ability, and high temperature oxidation resistance. The specific surface area of BN aerogels can reach up to 1051 m2 g-1, 2-3 times larger than the reported BN aerogels. The mass density can be as low as 0.6 mg cm-3, much lower than that of air. The BN aerogels exhibit high hydrophobic properties and can absorb up to 160 times their weight in oil. This is much higher than porous BN nanosheets reported previously. The BN aerogels can be restored for reuse after oil absorption simply by burning them in air. This is because of their high temperature oxidation resistance and suggests broad utility as water treatment tools.

  3. Gas phase chemistry during electron assisted chemical vapor deposition (EACVD) of diamond films

    International Nuclear Information System (INIS)

    Diamond films were deposited in electron assisted chemical vapor deposition (EACVD) reactor using two source mixtures of CH4-H2 and C2H5OH-H2, respectively. The plasma gas composition during diamond growing was investigated in situ using optical emission spectroscopy (OES). In two cases of C2H2OH-H2 and CH4-H2 plasma, it was shown that CH and CH+ were all important precursor species in the diamond deposition reaction while the yields of poor diamond films corresponded to the presence of the C2 emission line. The difference between these two cases was that some oxygen-containing species (CH2O, CHO and O2) were detected in the C2H5OH-H2 plasma. The presence of these products may maintain the quality of the deposited diamond films while increasing carbon source concentration, and the growth rate was thus enhanced. These results imply that the increase in the growth rate of diamond film using C2H5OH-H2 mixture is primarily due to a change in gas phase environment

  4. Chemical vapor deposition graphene transfer process to a polymeric substrate assisted by a spin coater

    Science.gov (United States)

    Kessler, Felipe; da Rocha, Caique O. C.; Medeiros, Gabriela S.; Fechine, Guilhermino J. M.

    2016-03-01

    A new method to transfer chemical vapor deposition graphene to polymeric substrates is demonstrated here, it is called direct dry transfer assisted by a spin coater (DDT-SC). Compared to the conventional method DDT, the improvement of the contact between graphene-polymer due to a very thin polymeric film deposited by spin coater before the transfer process prevented air bubbles and/or moisture and avoided molecular expansion on the graphene-polymer interface. An acrylonitrile-butadiene-styrene copolymer, a high impact polystyrene, polybutadiene adipate-co-terephthalate, polylactide acid, and a styrene-butadiene-styrene copolymer are the polymers used for the transfers since they did not work very well by using the DDT process. Raman spectroscopy and optical microscopy were used to identify, to quantify, and to qualify graphene transferred to the polymer substrates. The quantity of graphene transferred was substantially increased for all polymers by using the DDT-SC method when compared with the DDT standard method. After the transfer, the intensity of the D band remained low, indicating low defect density and good quality of the transfer. The DDT-SC transfer process expands the number of graphene applications since the polymer substrate candidates are increased.

  5. Intercomparison on measurement of water vapour permeability

    DEFF Research Database (Denmark)

    Hansen, Kurt Kielsgaard

    Three different materials are tested - hard woodfibre board - damp proof course - underlay for roofing The water vapour permeability has been measured according to EN ISO 12572 (2001).......Three different materials are tested - hard woodfibre board - damp proof course - underlay for roofing The water vapour permeability has been measured according to EN ISO 12572 (2001)....

  6. Gas and vapour detection using polypyrrole

    NARCIS (Netherlands)

    Leur, R.H.M. van de; Waal, A. van der

    1999-01-01

    The vapours of organic solvents like toluene, butanon, and ethanol do effect the electrical conductivity of electrochemically synthesised polypyrrole. This property allows the use of polypyrrole in sensors for vapour detection. The conductivity is also a function of temperature and the history of th

  7. Fluorinion transfer in silver-assisted chemical etching for silicon nanowires arrays

    Energy Technology Data Exchange (ETDEWEB)

    Feng, Tianyu; Xu, Youlong, E-mail: ylxu@mail.xjtu.edu.cn; Zhang, Zhengwei; Mao, Shengchun

    2015-08-30

    Graphical abstract: - Highlights: • How Ag transfers F{sup −} to the adjacent Si atom was investigated and deduced by DFT at atomic scale. • Three-electrode CV tests proved the transferring function of Ag in the etching reaction. • Uniform SiNWAs were fabricated on unpolished silicon wafers with KOH pretreatment. - Abstract: Uniform silicon nanowires arrays (SiNWAs) were fabricated on unpolished rough silicon wafers through KOH pretreatment followed by silver-assisted chemical etching (SACE). Density functional theory (DFT) calculations were used to investigate the function of silver (Ag) at atomic scale in the etching process. Among three adsorption sites of Ag atom on Si(1 0 0) surface, Ag(T4) above the fourth-layer surface Si atoms could transfer fluorinion (F{sup −}) to adjacent Si successfully due to its stronger electrostatic attraction force between Ag(T4) and F{sup −}, smaller azimuth angle of F−Ag(T4)−Si, shorter bond length of F−Si compared with F−Ag. As F{sup −} was transferred to adjacent Si by Ag(T4) one by one, the Si got away from the wafer in the form of SiF{sub 4} when it bonded with enough F{sup −} while Ag(T4) was still attached onto the Si wafer ready for next transfer. Cyclic voltammetry tests confirmed that Ag can improve the etching rate by transferring F{sup −} to Si.

  8. Nanoscale coatings of tungsten by radio frequency plasma assisted chemical vapor deposition on graphite

    International Nuclear Information System (INIS)

    Future thermonuclear fusion reactors including ITER are heading towards full scale operations with tungsten being the material for the divertor, limiter and probably the first wall too. Tungsten has several superior properties over its low Z competitors in terms of higher melting point, lower sputtering yield, low fuel retention (D - T) etc. So far, fusion experimentalists have gained enough experience and have rich databases with carbon as its first wall as well as target materials in tokamaks. However, database for tungsten line radiation in variety of plasmas i.e. basic laboratory scale to high density and high temperature plasmas is rare and this requires immediate attention to construct a database with experimental evidences. Such studies are not limited to only large scale fusion reactors but small and medium scale toroidally confined devices can be suitably utilized. Present day tokamaks are now switching to plasma facing components made up of tungsten. As the complete replacement of the wall and target materials from carbon to tungsten in existing tokamaks is challenging and time consuming exercise, tungsten coatings on selected target materials remains a very feasible option for the purpose. This paper will present the development of indigenous tungsten coating reactor which has successfully produced tungsten coated graphite tiles of sample dimensions. The tungsten coated graphite tiles are produced by RF plasma assisted chemical vapor deposition of tungsten on graphite substrates. The RF plasma is produced with 60 - 100 W power and tungsten nano ions are produced by dissociating the precursor gas tungsten hexa-fluoride (WF6) in sufficient hydrogen background. Further, challenges in handling WF6 plasma at high pressures and in-situ spectroscopy results during the coating process will be presented. (author)

  9. Aerosol assisted atmospheric pressure chemical vapor deposition of silicon thin films using liquid cyclic hydrosilanes

    International Nuclear Information System (INIS)

    Silicon (Si) thin films were produced using an aerosol assisted atmospheric pressure chemical vapor deposition technique with liquid hydrosilane precursors cyclopentasilane (CPS, Si5H10) and cyclohexasilane (CHS, Si6H12). Thin films were deposited at temperatures between 300 and 500 °C, with maximum observed deposition rates of 55 and 47 nm/s for CPS and CHS, respectively, at 500 °C. Atomic force microscopic analyses of the films depict smooth surfaces with roughness of 4–8 nm. Raman spectroscopic analysis indicates that the Si films deposited at 300 °C and 350 °C consist of a hydrogenated amorphous Si (a-Si:H) phase while the films deposited at 400, 450, and 500 °C are comprised predominantly of a hydrogenated nanocrystalline Si (nc-Si:H) phase. The wide optical bandgaps of 2–2.28 eV for films deposited at 350–400 °C and 1.7–1.8 eV for those deposited at 450–500 °C support the Raman data and depict a transition from a-Si:H to nc-Si:H. Films deposited at 450 oC possess the highest photosensitivity of 102–103 under AM 1.5G illumination. Based on the growth model developed for other silanes, we suggest a mechanism that governs the film growth using CPS and CHS. - Highlights: • Si films via AA-APCVD are realized using cyclopentasilane (CPS) and cyclohexasilane (CHS). • Low activation energies of CPS and CHS allow Si thin films at low temperatures (300 °C). • High growth rates of 47–55 nm/s were obtained at 500 °C • Near device quality Si thin films with 2–3 orders of photosensitivity • Si thin films via AA-APCVD are amenable to continuous roll-to-roll manufacturing

  10. Surface chemical studies of chemical vapour deposited diamond thin films

    CERN Document Server

    Proffitt, S

    2001-01-01

    could not easily be correlated to the bulk film properties. It is suggested that electron emission arises from the graphite component of graphite- diamond grain boundaries that are present in the nanocrystalline films. species. The adsorbed O and Cl species are more strongly bound to the K layer than they are to the diamond substrate, so thermal desorption of K from the K/CI/diamond or K/O/diamond surface results also in the simultaneous loss ofO and Cl. The phosphorus precursor trisdimethylaminophosphine (TDMAP) has a negligible reactive sticking probability on the clean diamond surface. This can be increased by thermal cracking of the gas phase precursor by a heated filament, resulting in non-activated adsorption to produce an adlayer containing a mixture of surface-bound ligands and phosphorus containing species. The ligands were readily lost upon heating, leaving P, some of which was lost from the surface at higher temperatures. Pre-hydrogenation of the diamond surface inhibited the uptake of cracked TDMA...

  11. Antibacterial properties and chemical characterization of the essential oils from summer savory extracted by microwave-assisted hydrodistillation

    OpenAIRE

    Shila Rezvanpanah; Karamatollah Rezaei; Mohammad-Taghi Golmakani; Seyyed Hadi Razavi

    2011-01-01

    Antibacterial properties and chemical characterization of the essential oils from summer savory (Satureja hortensis) extracted by microwave-assisted hydrodistillation (MAHD) were compared with those of the essential oils extracted using the traditional hydrodistillation (HD) method. While MAHD at 660 W required half as much time as HD needed, similar antibacterial efficacies were found from the essential oils obtained by the two extraction methods on two food pathogens (Staphylococcus aureus,...

  12. Triangle pore arrays fabricated on Si (111) substrate by sphere lithography combined with metal-assisted chemical etching and anisotropic chemical etching

    Science.gov (United States)

    Asoh, Hidetaka; Fujihara, Kosuke; Ono, Sachiko

    2012-07-01

    The morphological change of silicon macropore arrays formed by metal-assisted chemical etching using shape-controlled Au thin film arrays was investigated during anisotropic chemical etching in tetramethylammonium hydroxide (TMAH) aqueous solution. After the deposition of Au as the etching catalyst on (111) silicon through a honeycomb mask prepared by sphere lithography, the specimens were etched in a mixed solution of HF and H2O2 at room temperature, resulting in the formation of ordered macropores in silicon along the [111] direction, which is not achievable by conventional chemical etching without a catalyst. In the anisotropic etching in TMAH, the macropores changed from being circular to being hexagonal and finally to being triangular, owing to the difference in etching rate between the crystal planes.

  13. Grand Equilibrium: vapour-liquid equilibria by a new molecular simulation method

    CERN Document Server

    Vrabec, J

    2009-01-01

    A new molecular simulation method for the calculation of vapour-liquid equilibria of mixtures is presented. In this method, the independent thermodynamic variables are temperature and liquid composition. In the first step, one isobaric isothermal simulation for the liquid phase is performed, in which the chemical potentials of all components and their derivatives with respect to the pressure, i.e., the partial molar volumes, are calculated. From these results, first order Taylor series expansions for the chemical potentials as functions of the pressure $\\mu_i(p)$ at constant liquid composition are determined. That information is needed, as the specified pressure in the liquid will generally not be equal to the equilibrium pressure, which has to be found in the course of a vapour simulation. In the second step, one pseudo grand canonical simulation for the vapour phase is performed, where the chemical potentials are set according to the instantaneous pressure $p^v$ using the previously determined function $\\mu...

  14. Vapour-liquid equilibrium in the monoethylene glycol - methane system at elevated pressures

    OpenAIRE

    Bersås, Anita

    2012-01-01

    A range of different chemicals are used in natural gas processing. The systems operate in closed loops, but a small amount of the chemicals are lost due to the solubility of the chemical in the gas phase. This leads to increased operational costs, it may cause HSE related problems, and it can lead to operational difficulties and contamination of downstream processes and products. A limited number of vapour-liquid equilibrium, VLE, data for processing chemicals in methane are available in...

  15. Vapour pressures and enthalpies of vapourization of a series of the {gamma}-lactones

    Energy Technology Data Exchange (ETDEWEB)

    Emel' yanenko, Vladimir N. [Department of Physical Chemistry, University of Rostock, 18051 Rostock (Germany)], E-mail: vladchimic@tut.by; Kozlova, Svetlana A.; Verevkin, Sergey P. [Department of Physical Chemistry, University of Rostock, 18051 Rostock (Germany); Roganov, Gennady N. [Department of Chemistry and Technology, Mogilev State University of Foodstaffs (Belarus)

    2008-06-15

    Vapour pressures and the molar enthalpies of vapourization of the {gamma}-lactones ({gamma}-valerolactone, {gamma}-hexanolactone, {gamma}-heptanolactone, {gamma}-nonanolactone, and {gamma}-decanolactone) have been determined by the transpiration method. These results together with a large number of experimental data from the literature have been checked for internal consistency. This collection has been used for development of group-additivity procedure for prediction of vapourization enthalpies of lactones.

  16. Vapour pressures and enthalpies of vapourization of a series of the γ-lactones

    International Nuclear Information System (INIS)

    Vapour pressures and the molar enthalpies of vapourization of the γ-lactones (γ-valerolactone, γ-hexanolactone, γ-heptanolactone, γ-nonanolactone, and γ-decanolactone) have been determined by the transpiration method. These results together with a large number of experimental data from the literature have been checked for internal consistency. This collection has been used for development of group-additivity procedure for prediction of vapourization enthalpies of lactones

  17. Aerosol assisted atmospheric pressure chemical vapor deposition of silicon thin films using liquid cyclic hydrosilanes

    Energy Technology Data Exchange (ETDEWEB)

    Guruvenket, Srinivasan, E-mail: guruvenket.srinivasan@ndsu.edu [Center for Nanoscale Energy Related Materials, 1715 NDSU Research Park Drive N, North Dakota State University, Fargo, ND 58102 (United States); Hoey, Justin M.; Anderson, Kenneth J.; Frohlich, Matthew T.; Sailer, Robert A. [Center for Nanoscale Energy Related Materials, 1715 NDSU Research Park Drive N, North Dakota State University, Fargo, ND 58102 (United States); Boudjouk, Philip [Center for Nanoscale Energy Related Materials, 1715 NDSU Research Park Drive N, North Dakota State University, Fargo, ND 58102 (United States); Department of Chemistry and Biochemistry, Ladd-Dunbar Hall, North Dakota State University, Fargo, ND 58102 (United States)

    2015-08-31

    Silicon (Si) thin films were produced using an aerosol assisted atmospheric pressure chemical vapor deposition technique with liquid hydrosilane precursors cyclopentasilane (CPS, Si{sub 5}H{sub 10}) and cyclohexasilane (CHS, Si{sub 6}H{sub 12}). Thin films were deposited at temperatures between 300 and 500 °C, with maximum observed deposition rates of 55 and 47 nm/s for CPS and CHS, respectively, at 500 °C. Atomic force microscopic analyses of the films depict smooth surfaces with roughness of 4–8 nm. Raman spectroscopic analysis indicates that the Si films deposited at 300 °C and 350 °C consist of a hydrogenated amorphous Si (a-Si:H) phase while the films deposited at 400, 450, and 500 °C are comprised predominantly of a hydrogenated nanocrystalline Si (nc-Si:H) phase. The wide optical bandgaps of 2–2.28 eV for films deposited at 350–400 °C and 1.7–1.8 eV for those deposited at 450–500 °C support the Raman data and depict a transition from a-Si:H to nc-Si:H. Films deposited at 450 {sup o}C possess the highest photosensitivity of 10{sup 2}–10{sup 3} under AM 1.5G illumination. Based on the growth model developed for other silanes, we suggest a mechanism that governs the film growth using CPS and CHS. - Highlights: • Si films via AA-APCVD are realized using cyclopentasilane (CPS) and cyclohexasilane (CHS). • Low activation energies of CPS and CHS allow Si thin films at low temperatures (300 °C). • High growth rates of 47–55 nm/s were obtained at 500 °C • Near device quality Si thin films with 2–3 orders of photosensitivity • Si thin films via AA-APCVD are amenable to continuous roll-to-roll manufacturing.

  18. Vapour trap development and operational experience

    International Nuclear Information System (INIS)

    Sodium aerosols have the unpleasant characteristic that they deposit at places with low temperature level. This effect can be utilized when sodium aerosols are to be trapped at places which are determined beforehand. Thus vapour traps were developed which can filter sodium vapour from the cover gas. By this means the necessity was eliminated to heat all gas lines and gas systems with trace heaters just as all sodium lines are heated. It was of special interest for the INTERATOM to develop vapour traps which must not be changed or cleaned after a certain limited operating period. The vapour traps were supposed to enable maintenance free operation, i.e. they were to operate 'self cleaning'

  19. Chemically Compatible Sacrificial Layer-Assisted Lift-Off Patterning Method for Fabrication of Organic Light-Emitting Displays

    Science.gov (United States)

    Choi, Wonsuk; Kim, Min-Hoi; Lee, Sin-Doo

    2011-08-01

    We developed a generic platform to pattern combinatorial functional layers composed of different classes of organic materials using a repetitive lift-off method based on a chemically compatible sacrificial layer (SL) for organic light-emitting diodes (OLEDs). The essential features come from the chemically compatible SL of a fluorous-polymer that can be generated by laser-inscription or transfer-printing. The precise registration of lateral patterns of different materials was achieved on a single substrate through a series of SL-assisted lift-off processes. The chemical compatibility of the SL and the stability of the light-emitting characteristics were shown in a fluorous-solvent treated monochrome OLEDs.

  20. U.S. assistance in the destruction of Russia's chemical weapons

    OpenAIRE

    Mostoller, Eric Charles

    2000-01-01

    The thesis examines the present status of Russia's chemical weapons destruction program, which is to be implemented according to the 1993 Chemical Weapons Convention (CWC). It assesses the magnitude of the challenges in destroying the world's largest chemical weapons stockpile, which is located at seven sites in western Russia. It also evaluates the environmental and international security concerns posed by the conditions at these sites and the disastrous implications of a failure of this che...

  1. Development of metal-assisted chemical etching of silicon as a 3D nanofabrication platform

    Science.gov (United States)

    Hildreth, Owen James

    The considerable interest in nanomaterials and nanotechnology over the last decade is attributed to Industry's desire for lower cost, more sophisticated devices and the opportunity that nanotechnology presents for scientists to explore the fundamental properties of nature at near atomic levels. In pursuit of these goals, researchers around the world have worked to both perfect existing technologies and also develop new nano-fabrication methods; however, no technique exists that is capable of producing complex, 2D and 3D nano-sized features of arbitrary shape, with smooth walls, and at low cost. This in part is due to two important limitations of current nanofabrication methods. First, 3D geometry is difficult if not impossible to fabricate, often requiring multiple lithography steps that are both expensive and do not scale well to industrial level fabrication requirements. Second, as feature sizes shrink into the nano-domain, it becomes increasingly difficult to accurately maintain those features over large depths and heights. The ability to produce these structures affordably and with high precision is critically important to a number of existing and emerging technologies such as metamaterials, nano-fluidics, nano-imprint lithography, and more. To overcome these limitations, this study developed a novel and efficient method to etch complex 2D and 3D geometry in silicon with controllable sub-micron to nano-sized features with aspect ratios in excess of 500:1. This study utilized Metal-assisted Chemical Etching (MaCE) of silicon in conjunction with shape-controlled catalysts to fabricate structures such as 3D cycloids, spirals, sloping channels, and out-of-plane rotational structures. This study focused on taking MaCE from a method to fabricate small pores and silicon nanowires using metal catalyst nanoparticles and discontinuous thin films, to a powerful etching technology that utilizes shaped catalysts to fabricate complex, 3D geometry using a single lithography

  2. Fabrication of microchannels in single-crystal GaN by wet-chemical-assisted femtosecond-laser ablation

    International Nuclear Information System (INIS)

    We investigated micro- and nano-fabrication of wide band-gap semiconductor gallium nitride (GaN) using a femtosecond (fs) laser. Nanoscale craters were successfully formed by wet-chemical-assisted fs-laser ablation, in which the laser beam is focused onto a single-crystal GaN substrate in a hydrochloric acid (HCl) solution. This allows efficient removal of ablation debris produced by chemical reactions during ablation, resulting in high-quality ablation. However, a two-step processing method involving irradiation by a fs-laser beam in air followed by wet etching, distorts the shape of the crater because of residual debris. The threshold fluence for wet-chemical-assisted fs-laser ablation is lower than that for fs-laser ablation in air, which is advantageous for improving fabrication resolution since it reduces thermal effects. We have fabricated craters as small as 510 nm by using a high numerical aperture (NA) objective lens with an NA of 0.73. Furthermore, we have formed three-dimensional hollow microchannels in GaN by fs-laser direct-writing in HCl solution.

  3. Source Allocation of Long-Range Asian Dusts Transportation across the Taiwan Strait by Innovative Chemical-Assisted Identification Methods

    Directory of Open Access Journals (Sweden)

    Yi-Hsiu Jen

    2014-01-01

    Full Text Available This study used the backward trajectory calculation to obtain the transportation routes of Asian dusts and further combined the chemical composition with the enrichment factor (EF and the grey relational analysis (GR to identify the potential sources of eighteen Asian dust storm (ADS events. The results showed that the chemical compositions of atmospheric particles sampled at the Pescadores Islands were very similar to source soils fugitively emitted from Inner Mongolia, which could assist in identifying the source regions of Asian dusts. This study further compared the source allocation of Asian dusts obtained from EF, GR, and backward trajectory, which showed that the source regions of Asian dusts obtained from these three methods were quite similar. The similarity of backward trajectory and GR reached as high as 83.3%. Moreover, the similarity of backward trajectory calculation and EF or GR was up to 77.8% while that of the GR and EF was up to 83.3%. Overall, these three methods can successfully allocate the source regions of Asian dusts by 66.7%. Moreover, these innovative chemical-assisted methods can be successfully applied to identify the source regions of Asian dusts for 18 ADS events.

  4. Componentry, constructive and process solutions of sodium vapour precipitation problem

    International Nuclear Information System (INIS)

    Sodium vapour trap for periodic operation (SVT) is installed to present of sodium vapour emissions after response of safety valve on tanks with sodium and to provide protection from sodium vapour during planned argon blowing from tanks. It is recommended that SVT be placed directly above tanks with sodium. But the main problem of BN-600 and BN-800 componentry (grouping) is the lack of premises. So, the recommended placement is impossible. The principal scheme of SVT piping BN-800. Argon purification from sodium vapor is carried out by air refrigerating. Refrigerating degree is regulated by control valve on the air delivery pipe to SVT. There is montejus tank in the scheme of SVT piping for liquid sodium drainage that is condensed in SVT. Sodium drainage pipe is combined with argon delivery pipe (line E). There are two main problems with the present construction of SVT based on operation experience of BN-600: 1. The horizontal pipeline 'Ar+Na' before the SVT entrance is a dangerous section of this piping. Electric heating of this pipeline is always 'on'. Inspite of this, sodium vapour condenses before SVT. It means that the pipeline becomes progressively clogged up. 2. Two substances (argon with sodium vapour and liquid sodium) are moving towards each other in one pipeline (line E). This is the most probable place of clogging by sodium, especially branch-pipe in the connection point of line E with SVT. Sodium cruds turn into solid state in the process of argon delivery pipe clogging.In most cases solid scrubs melting temperature exceeds 400-500C depending on chemical composition of crud (for example caustic soda - 1200C). It means that it is almost impossible to heat the pipeline to restore its passability. The only measure in this case is the change of pipe section during BN stop. The first problem can be solved by: - Increasing the diameter (which was DN40 in the project of BN-600, and is DN80 in BN-800); - Increasing the temperature of electric heating

  5. Co-TPP functionalized carbon nanotube composites for detection of nitrobenzene and chlorobenzene vapours

    Indian Academy of Sciences (India)

    Swasti Saxena; G S S SAINI; A L Verma

    2015-04-01

    We report preparation of nanocomposites by non-covalent functionalization of carbon nanotubes (CNTs) with metal-tetraphenylporphyrins (M-TPP). Fourier transform infrared (FTIR) spectroscopy and transmission electron microscopy (TEM) results suggest formation of nanosized clusters of Co-TPP around the CNTs surface. X-ray diffraction studies indicate electronic charge re-distribution and strong interactions among CNTs and Co-TPP on functionalization. The films of the hybrid CNT–M-TPP nanocomposite exhibit change in conductivity on exposure to some chemical vapours. In the present work, the films prepared from the cobalt-TPP functionalized CNTs hybrid composites have been investigated for the detection of chlorobenzene (CB) and nitrobenzene (NB) vapours at room temperature. The films show response time of few seconds on exposure to both the NB and CB vapours while the recovery time for NB is significantly different compared to CB. A distinct and highly reproducible response pattern in the relative changes in resistance, recovery and response times on exposure to the vapours of NB, CB and few other chemicals at room temperature has been exploited to differentiate CB and NB vapours from one another.

  6. Integration of plasma-assisted surface chemical modification, soft lithography, and protein surface activation for single-cell patterning

    Science.gov (United States)

    Cheng, Q.; Komvopoulos, K.

    2010-07-01

    Surface patterning for single-cell culture was accomplished by combining plasma-assisted surface chemical modification, soft lithography, and protein-induced surface activation. Hydrophilic patterns were produced on Parylene C films deposited on glass substrates by oxygen plasma treatment through the windows of polydimethylsiloxane shadow masks. After incubation first with Pluronic F108 solution and then serum medium overnight, surface seeding with mesenchymal stem cells in serum medium resulted in single-cell patterning. The present method provides a means of surface patterning with direct implications in single-cell culture.

  7. An externally heated copper vapour laser

    International Nuclear Information System (INIS)

    A pulsed Copper Vapour Laser (CVL), with a nominal 6 kHz repetition rate, was designed, build, and commissioned at Chalk River laboratories. The laser was required for Resonant Ionization Mass Spectroscopy (RIMS) experiments and for projects associated with Atomic Vapour laser Isotope Separation (AVLIS) studies. For the laser to operate, copper coupons position along the length of a ceramic tube must be heated sufficiently to create an appropriate vapour pressure. The AECL CVL uses an external heater element with a unique design to raise the temperature of the tube. The Cylindrical graphite heating element is shaped to compensate for the large radiation end losses of the laser tube. The use of an external heater saves the expensive high-current-voltage switching device from heating the laser tube, as in most commercial lasers. This feature is especially important given the intermittent usage typical of experimental research. As well, the heater enables better parametric control of the laser output when studying the lasing of copper (or other) vapour. This report outlines the lasing process in copper vapour, describes in detail all three major laser sub-systems: the laser body; the laser tube heater; the high voltage pulsed discharge; and, reports parametric measurements of the individual sub-systems and the laser system as a whole. Also included are normal operating procedures to heat up, run and shut down the laser

  8. Role of fluorine atoms in the oxidation-hydrolysis process of plasma assisted chemical vapor deposition fluorinated silicon nitride film

    Energy Technology Data Exchange (ETDEWEB)

    Sanchez, O.; Gomez-Aleixandre, C.; Palacio, C. (Universidad Autonoma de Madrid (Spain))

    The oxidation and/or hydrolysis of a plasma assisted chemical vapor deposition fluorinated silicon nitride film in a moisture atmosphere has been studied. The film presents fluorine atoms incorporated as -SiF, -SiF[sub 2], -SiF[sub 3], and [-SiF[sub 2]-][sub n] groups. The open structure of the film, due to the high fluorine content as [-SiF[sub 2]-][sub n], favors the penetration of oxygen and water molecules in the network. The evolution of the film has been explained by the different reactivity of the silicon atoms depending on their chemical environment. The role of fluorine atoms incorporated into the film has been established. 12 refs., 3 figs., 1 tab.

  9. Effect of MW-assisted roasting on nutritional and chemical properties of hazelnuts

    OpenAIRE

    Fatih Kalkan; Sai Kranthi Vanga; Yvan Gariepy; Vijaya Raghavan

    2015-01-01

    In order to enhance the flavor, texture, color, and appearance of hazelnuts, they are roasted during postharvest processing. In this study, raw hazelnuts (Corylus avellana L.) were roasted using microwave (MW) and MW-assisted hot air methods under various roasting conditions. The hazelnuts roasted were then examined to determine the percent DPPH radical scavenging activity, antioxidant capacity, total phenolic content, resistant starch, non-resistant starch, total starch, and protein concentr...

  10. Solvents for CO2 capture. Structure-activity relationships combined with vapour-liquid-equilibrium measurements

    NARCIS (Netherlands)

    Mergler, Y.L.; Rumley-Van Gurp, R.; Brasser, P.; Koning, M.C. de; Goetheer, E.L.V.

    2011-01-01

    In this study a systematic approach was chosen to test and characterize amine systems for CO2 capture. Vapour-liquid-equilibrium measurements were performed on a homologue series of amines, with ethylene amine as base structure. Various functional groups were used that ranged in chemical and physica

  11. Compact device for mass transfer between liquid films and vapour or gas

    OpenAIRE

    Acosta-Iborra, Antonio

    2008-01-01

    University Carlos III of Madrid (Spain) offers a method and device for mass transfer between liquid and vapour or gas. Applications to absorbers and desorbers in absorption chiller technology, evaporators, condensers and chemical reactors. The research group is trying to find companies for further development, commercial viability assessment and commercial exploitation.

  12. The condensation of sodium vapour bubbles

    International Nuclear Information System (INIS)

    This is a preliminary analytic study of the violent collapse of a vapour bubble by condensation in cold liquid. A calculation method is described and is applied to the condensation of sodium vapour bubbles such as might be formed in an overheating accident in a fast reactor. The method is not satisfactory, and a more thorough study of the problem is needed, but these preliminary results suggest that while the violent collapse is unlikely to do much mechanical damage, it produces a considerable amount of acoustic energy. (author)

  13. Social support net for chemically dependents: ecomap as instrumental in health assistance

    OpenAIRE

    Layana de Paula Cavalcante; Rita de Souza Tomás Falcão; Helder de Pádua Lima; Angélica Mota Marinho; Jaqueline Queiroz de Macedo; Violante Augusta Batista Braga

    2012-01-01

    The social support net is composed by the group of bonds related to the individual. Taking into account that the quality, as well as the quantity of these bonds can interfere in the person's life, acting as positive or negative element, it was identified the need to know this net of relationships by the professionals that takes care of such individuals. It was aimed to assess the Ecomap of drug users assisted in a specialized service as instrumental of support for health care. This is a quali...

  14. US technical assistance to the IAEA and the chemical weapons convection (CWC) - a review and look to the future

    Energy Technology Data Exchange (ETDEWEB)

    Indusi, J.; Parsick, R.J.; Reisman, A.W.

    1997-08-01

    This paper reviews the Safeguards mandate of the International Atomic Energy Agency (IAEA) and describes U.S. technical support programs. We also review the mandate of the Chemical Weapons Convention (CWC) and speculate on the technical areas where U.S. assistance may prove useful. The IAEA was organized in 1957 in response to President Eisenhower`s {open_quotes}Atoms for Peace{close_quotes} initiative presented to the UN General Assembly on December 8, 1953. The Organization for the Prohibition of Chemical Weapons (OPCW) has been organized by a Preparatory Commission (PREPCOM) to prepare for the entry-into-force of this new convention which prohibits the development, production, stockpiling and use of chemical weapons and on their destruction. The safeguards mandate of the IAEA is to carry out verifications of nuclear material pursuant to the Treaty on the Non-Proliferation of Nuclear Weapons (NPT) and other voluntary but legally binding agreements. U.S. technical support programs have provided and continue to provide assistance in the form of Cost-Free Experts (CFE`s), systems studies on new safeguards approaches, training, computerized information systems, and equipment for nuclear materials measurements and containment and surveillance systems. Because the CWC just recently entered into force (April 29, 1997), verification procedures of the OPCW are not yet fully developed. However, it is expected, and can already be seen for many aspects of the technical task, that there are many similarities between the verification activities of the OPCW and those carried out by the IAEA. This paper will discuss potential technical support areas that can help strengthen the OPCW. 9 refs.

  15. Effect of MW-assisted roasting on nutritional and chemical properties of hazelnuts

    Science.gov (United States)

    Kalkan, Fatih; Kranthi Vanga, Sai; Gariepy, Yvan; Raghavan, Vijaya

    2015-01-01

    In order to enhance the flavor, texture, color, and appearance of hazelnuts, they are roasted during postharvest processing. In this study, raw hazelnuts (Corylus avellana L.) were roasted using microwave (MW) and MW-assisted hot air methods under various roasting conditions. The hazelnuts roasted were then examined to determine the percent DPPH radical scavenging activity, antioxidant capacity, total phenolic content, resistant starch, non-resistant starch, total starch, and protein concentration. The roasting experiments were done using a completely randomized factorial arrangement of two roasting types by three roasting times (9, 15, and 21 min) by three roasting temperatures (70, 90, and 110°C) using three replications within each experiment. These roasting methods were found to yield significant differences in antioxidant capacity, total phenolic content, resistant starch, non-resistant starch, and protein concentration between MW and MW-assisted hot air roasting processes, while no difference was found in percent DPPH radical scavenging activity and total starch. The results obtained may be of great importance to the food research community and industrial hazelnut roasting technologies. PMID:26689314

  16. Effect of MW-assisted roasting on nutritional and chemical properties of hazelnuts

    Directory of Open Access Journals (Sweden)

    Fatih Kalkan

    2015-12-01

    Full Text Available In order to enhance the flavor, texture, color, and appearance of hazelnuts, they are roasted during postharvest processing. In this study, raw hazelnuts (Corylus avellana L. were roasted using microwave (MW and MW-assisted hot air methods under various roasting conditions. The hazelnuts roasted were then examined to determine the percent DPPH radical scavenging activity, antioxidant capacity, total phenolic content, resistant starch, non-resistant starch, total starch, and protein concentration. The roasting experiments were done using a completely randomized factorial arrangement of two roasting types by three roasting times (9, 15, and 21 min by three roasting temperatures (70, 90, and 110°C using three replications within each experiment. These roasting methods were found to yield significant differences in antioxidant capacity, total phenolic content, resistant starch, non-resistant starch, and protein concentration between MW and MW-assisted hot air roasting processes, while no difference was found in percent DPPH radical scavenging activity and total starch. The results obtained may be of great importance to the food research community and industrial hazelnut roasting technologies.

  17. Microwave-assisted chemical oxidation of biological waste sludge: simultaneous micropollutant degradation and sludge solubilization.

    Science.gov (United States)

    Bilgin Oncu, Nalan; Akmehmet Balcioglu, Isil

    2013-10-01

    Microwave-assisted hydrogen peroxide (MW/H2O2) treatment and microwave-assisted persulfate (MW/S2O8(2-)) treatment of biological waste sludge were compared in terms of simultaneous antibiotic degradation and sludge solubilization. A 2(3) full factorial design was utilized to evaluate the influences of temperature, oxidant dose, and holding time on the efficiency of these processes. Although both MW/H2O2 and MW/S2O8(2-) yielded ≥97% antibiotic degradation with 1.2g H2O2 and 0.87 g S2O8(2-) per gram total solids, respectively, at 160 °C in 15 min, MW/S2O8(2-) was found to be more promising for efficient sludge treatment at a lower temperature and a lower oxidant dosage, as it allows more effective activation of persulfate to produce the SO4(-) radical. Relative to MW/H2O2, MW/S2O8(2-) gives 48% more overall metal solubilization, twofold higher improvement in dewaterability, and the oxidation of solubilized ammonia to nitrate in a shorter treatment period. PMID:23928124

  18. Adaptive finite element method assisted by stochastic simulation of chemical systems

    Czech Academy of Sciences Publication Activity Database

    Cotter, S.L.; Vejchodský, Tomáš; Erban, R.

    2013-01-01

    Roč. 35, č. 1 (2013), B107-B131. ISSN 1064-8275 R&D Projects: GA AV ČR(CZ) IAA100190803 Institutional support: RVO:67985840 Keywords : chemical Fokker-Planck * adaptive meshes * stochastic simulation algorithm Subject RIV: BA - General Mathematics Impact factor: 1.940, year: 2013 http://epubs.siam.org/doi/abs/10.1137/120877374

  19. Collision induced photon echo in ytterbium vapour

    NARCIS (Netherlands)

    Rubtsova, N. N.; Khvorostov, E. B.; Kochubei, S. A.; Ishchenko, V. N.; Yevseyev, I. V.

    2006-01-01

    Collision induced photon echo observed in ytterbium vapour at the inter-combination transition (6s6p) P-8(1) (6s(2)) S-1(0) in the presence of Kr gas as buffer. Collision echo is generated by two unidirectional resonant dye laser pulses of linear mutually orthogonal polarizations. There is practical

  20. A mathematical model of vapour film destabilisation

    International Nuclear Information System (INIS)

    In a hypothetical reactor accident, destabilisation of an intervening vapour film between the molten fuel and liquid coolant by a weak shock wave (trigger), is considered likely to initiate the molten fuel-coolant interaction. The one-dimensional model presented here is part of a larger programme of fundamental research aimed at improved reactor safety. (U.K.)

  1. Developments in vapour cloud explosion blast modeling

    NARCIS (Netherlands)

    Mercx, W.P.M.; Berg, A.C. van den; Hayhurst, C.J.; Robertson, N.J.; Moran, K.C.

    2000-01-01

    TNT Equivalency methods are widely used for vapour cloud explosion blast modeling. Presently, however, other types of models are available which do not have the fundamental objections TNT Equivalency models have. TNO Multi-Energy method is increasingly accepted as a more reasonable alternative to be

  2. Vapour-density determinations of Group 5 pentafluorides

    International Nuclear Information System (INIS)

    Vapour-density determinations on the saturated vapours of NbF5, TaF5, and SbF5 at temperatures above their boiling points have been made by a modified Dumas method. The average molecular weights of the vapour-phase species near the boiling points are close to those for the respective trimers. Approaching 4000C (or 3000C for SbF5), however, the major constituent of the vapour is the monomeric pentafluoride. (author)

  3. Structural and XPS studies of PSi/TiO2 nanocomposites prepared by ALD and Ag-assisted chemical etching

    International Nuclear Information System (INIS)

    Highlights: • Porous silicon/TiO2 nanocomposites have been investigated. • Morphology and chemical composition of PSi/TiO2 nanocomposites were established. • Valence-band XPS maximums for PSi/TiO2 nanocomposites were found and analyzed. - Abstract: PSi/TiO2 nanocomposites fabricated by atomic layer deposition (ALD) and metal-assisted chemical etching (MACE) were investigated. The morphology and phase structure of PSi/TiO2 nanocomposites were studied by means of scanning electron microscopy (SEM), transmission electron microscopy (TEM) with an energy dispersive X-ray spectroscopy (EDX) and Raman spectroscopy. The mean size of TiO2 nanocrystals was determined by TEM and Raman spectroscopy. X-ray photoelectron spectroscopy (XPS) was used to analyze the chemical elemental composition by observing the behavior of the Ti 2p, O 1s and Si 2p lines. TEM, Raman spectroscopy and XPS binding energy analysis confirmed the formation of TiO2 anatase phase inside the PSi matrix. The XPS valence band analysis was performed in order to investigate the modification of PSi/TiO2 nanocomposites electronic structure. Surface defects states of Ti3+ at PSi/TiO2 nanocomposites were identified by analyzing of XPS valence band spectra

  4. Adaptive Finite Element Method Assisted by Stochastic Simulation of Chemical Systems

    KAUST Repository

    Cotter, Simon L.

    2013-01-01

    Stochastic models of chemical systems are often analyzed by solving the corresponding Fokker-Planck equation, which is a drift-diffusion partial differential equation for the probability distribution function. Efficient numerical solution of the Fokker-Planck equation requires adaptive mesh refinements. In this paper, we present a mesh refinement approach which makes use of a stochastic simulation of the underlying chemical system. By observing the stochastic trajectory for a relatively short amount of time, the areas of the state space with nonnegligible probability density are identified. By refining the finite element mesh in these areas, and coarsening elsewhere, a suitable mesh is constructed and used for the computation of the stationary probability density. Numerical examples demonstrate that the presented method is competitive with existing a posteriori methods. © 2013 Society for Industrial and Applied Mathematics.

  5. The experiment on the saturation polarization of Rb vapour

    Institute of Scientific and Technical Information of China (English)

    Huang Xiang-You; You Pei-Lin; Du Wei-Min

    2004-01-01

    @@ A cylindrical capacitor containing rubidium vapour is made. The capacitance of it at. different voltages is measured under a certain Rb vapour pressure. The experimental C-V curve shows that the saturation polarization of Rb vapour is easily observed. The experiment further supports the idea that the Rb atom has a large permanent electric dipole moment.

  6. The Enhanced Light Absorptance and Device Application of Nanostructured Black Silicon Fabricated by Metal-assisted Chemical Etching.

    Science.gov (United States)

    Zhong, Hao; Guo, Anran; Guo, Guohui; Li, Wei; Jiang, Yadong

    2016-12-01

    We use metal-assisted chemical etching (MCE) method to fabricate nanostructured black silicon on the surface of C-Si. The Si-PIN photoelectronic detector based on this type of black silicon shows excellent device performance with a responsivity of 0.57 A/W at 1060 nm. Silicon nanocone arrays can be created using MCE treatment. These modified surfaces show higher light absorptance in the near-infrared range (800 to 2500 nm) compared to that of C-Si with polished surfaces, and the variations in the absorption spectra of the nanostructured black silicon with different etching processes are obtained. The maximum light absorptance increases significantly up to 95 % in the wavelength range of 400 to 2500 nm. Our recent novel results clearly indicate that nanostructured black silicon made by MCE has potential application in near-infrared photoelectronic detectors. PMID:27368764

  7. Pulse Operation of Chemical Oxygen-Iodine Laser by Pulsed Gas Discharge with the Assistance of Spark Pre-ionization

    Institute of Scientific and Technical Information of China (English)

    LI Guo-Fu; YU Hai-Jun; DUO Li-Ping; JIN Yu-Qi; WANG Jian; SANG Feng-Ting; FANG Ben-Jie; WANG De-Zhen

    2009-01-01

    The continuous wavelength chemical oxygen-iodine laser can be turned into pulse operation mode in order to obtain high energy and high pulse power. We propose an approach to produce iodine atoms instantaneously by pulsed gas discharge with the assistance of spark pre-ionization to achieve the pulsed goal. The influence of spark pre-ionization on discharge homogeneity is discussed. Voltage-current characteristics are shown and discussed in existence of the pre-ionization capacitor and peaking capacitor. The spark pre-ionization and peaking capacitor are very helpful in obtaining a stable and homogeneous discharge. The lasing is achieved at the total pressure of 2.2-2.9 kPa and single pulse energy is up to 180m J, the corresponding specific output energy is 1.0 J/L.

  8. Properties of Erbium Doped Hydrogenated Amorphous Carbon Layers Fabricated by Sputtering and Plasma Assisted Chemical Vapor Deposition

    Directory of Open Access Journals (Sweden)

    V. Prajzler

    2008-01-01

    Full Text Available We report about properties of carbon layers doped with Er3+ ions fabricated by Plasma Assisted Chemical Vapor Deposition (PACVD and by sputtering on silicon or glass substrates. The structure of the samples was characterized by X-ray diffraction and their composition was determined by Rutherford Backscattering Spectroscopy and Elastic Recoil Detection Analysis. The Absorbance spectrum was taken in the spectral range from 400 nm to 600 nm. Photoluminescence spectra were obtained using two types of Ar laser (λex=514.5 nm, lex=488 nm and also using a semiconductor laser (λex=980 nm. Samples fabricated by magnetron sputtering exhibited typical emission at 1530 nm when pumped at 514.5 nm. 

  9. Simulation of the isotopic composition of stratospheric water vapour - Part 2: Investigation of HDO / H2O variations

    Science.gov (United States)

    Eichinger, R.; Jöckel, P.; Lossow, S.

    2015-06-01

    Studying the isotopic composition of water vapour in the lower stratosphere can reveal the driving mechanisms of changes in the stratospheric water vapour budget and therefore help to explain the trends and variations of stratospheric water vapour during recent decades. We equipped a global chemistry climate model with a description of the water isotopologue HDO, comprising its physical and chemical fractionation effects throughout the hydrological cycle. We use this model to improve our understanding of the processes which determine the patterns in the stratospheric water isotope composition and in the water vapour budget itself. The link between the water vapour budget and its isotopic composition in the tropical stratosphere is presented through their correlation in a simulated 21-year time series. The two quantities depend on the same processes; however, they are influenced with different strengths. A sensitivity experiment shows that fractionation effects during the oxidation of methane have a damping effect on the stratospheric tape recorder signal in the water isotope ratio. Moreover, the chemically produced high water isotope ratios overshadow the tape recorder in the upper stratosphere. Investigating the origin of the boreal-summer signal of isotopically enriched water vapour reveals that in-mixing of old stratospheric air from the extratropics and the intrusion of tropospheric water vapour into the stratosphere complement each other in order to create the stratospheric isotope ratio tape recorder signal. For this, the effect of ice lofting in monsoon systems is shown to play a crucial role. Furthermore, we describe a possible pathway of isotopically enriched water vapour through the tropopause into the tropical stratosphere.

  10. Photocatalytic activity of tin-doped TiO{sub 2} film deposited via aerosol assisted chemical vapor deposition

    Energy Technology Data Exchange (ETDEWEB)

    Chua, Chin Sheng, E-mail: cschua@simtech.a-star.edu.sg [School of Electrical and Electronic Engineering, Nanyang Technological University, 50 Nanyang Avenue, 639798 (Singapore); Singapore Institute of Manufacturing Technology, 71 Nanyang Drive, 638075 (Singapore); Tan, Ooi Kiang; Tse, Man Siu [School of Electrical and Electronic Engineering, Nanyang Technological University, 50 Nanyang Avenue, 639798 (Singapore); Ding, Xingzhao [Singapore Institute of Manufacturing Technology, 71 Nanyang Drive, 638075 (Singapore)

    2013-10-01

    Tin-doped TiO{sub 2} films are deposited via aerosol assisted chemical vapor deposition using a precursor mixture composing of titanium tetraisopropoxide and tetrabutyl tin. The amount of tin doping in the deposited films is controlled by the volume % concentration ratio of tetrabutyl tin over titanium tetraisopropoxide in the mixed precursor solution. X-ray diffraction analysis results reveal that the as-deposited films are composed of pure anatase TiO{sub 2} phase. Red-shift in the absorbance spectra is observed attributed to the introduction of Sn{sup 4+} band states below the conduction band of TiO{sub 2}. The effect of tin doping on the photocatalytic property of TiO{sub 2} films is studied through the degradation of stearic acid under UV light illumination. It is found that there is a 10% enhancement on the degradation rate of stearic acid for the film with 3.8% tin doping in comparison with pure TiO{sub 2} film. This improvement of photocatalytic performance with tin incorporation could be ascribed to the reduction of electron-hole recombination rate through charge separation and an increased amount of OH radicals which are crucial for the degradation of stearic acid. Further increase in tin doping results in the formation of recombination site and large anatase grains, which leads to a decrease in the degradation rate. - Highlights: ► Deposition of tin-doped TiO{sub 2} film via aerosol assisted chemical vapor deposition ► Deposited anatase films show red-shifted in UV–vis spectrum with tin-dopants. ► Photoactivity improves at low tin concentration but reduces at higher concentration. ► Improvement in photoactivity due to bandgap narrowing from Sn{sup 4+} band states ► Maximum photoactivity achieved occurs for films with 3.8% tin doping.

  11. Reduced thermal budget processing of Y-Ba-Cu-O films by rapid isothermal processing assisted metalorganic chemical vapor deposition

    International Nuclear Information System (INIS)

    Metalorganic chemical vapor deposition (MOCVD) has the potential of emerging as a viable technique to fabricate ribbons, tapes, coated wires, and the deposition of films of high-temperature superconductors, and related materials. As a reduced thermal budget processing technique, rapid isothermal processing (RIP) based on incoherent radiation as the source of energy can be usefully coupled to conventional MOCVD. In this paper we report on the deposition and characterization of high quality superconducting thin films of Y-Ba-Cu-O (YBCO) on yttrium stabilized zirconia substrates by RIP assisted MOCVD. Using O2 gas as the source of oxygen, YBCO films deposited initially at 600 degree C for 1 min and at 745 degree C for 25 min followed by deposition at 780 degree C for 45 s are primarily c-axis oriented and zero resistance is observed at 89--90 K. The zero magnetic field current density at 53 and 77 K are 1.2x106 and 3x105 A/cm2, respectively. By using a mixture of N2O and O2 as the oxygen source substrate temperature was further reduced in the deposition of YBCO films. The films deposited initially at 600 degree C for 1 min and than at 720 degree C for 30 min are c-axis oriented and with zero resistance being observed at 91 K. The zero magnetic field current densities at 53 and 77 K are 3.4x106 and 1.2x106 A/cm2, respectively. To the best of our knowledge this is the highest value of critical current density, Jc for films deposited by MOCVD at a substrate temperature as low as 720 degree C. It is envisioned that high energy photons from the incoherent light source and the use of a mixture of N2O and O2 as the oxygen source, assist chemical reactions and lower overall thermal budget for processing of these films

  12. Chemical etching method assisted double-pulse LIBS for the analysis of silicon crystals

    Science.gov (United States)

    Khalil, A. A. I.

    2015-06-01

    Two Nd:YAG lasers working in pulsed modes are combined in the same direction (collinear arrangement) to focus on silicon (Si) crystals in reduced oxygen atmosphere (0.1 mbar) for double-pulse laser-induced breakdown spectroscopy (DP-LIBS) system. Silicon crystals of (100) and (111) orientations were investigated, and Si samples were measured either without prior treatment ("untreated") or after fabrication of nano-pores ("treated"). Nano-pores are produced by metal coating and by chemical etching. DP-LIBS spectra were compared for different Si samples (untreated, treated, (100) and (111) orientations), for double-pulse (DP) (with 266 nm pulse followed by 1064 nm pulse) excitation and for different delay times (times between the excitation laser pulse and the detection ICCD gate); treatment by chemical etching has been studied as well. The intensity of the atomic line Si I at 288.16 nm was enhanced by a factor of about three by using the DP-LIBS signals as compared to the single-pulse (SP) signal which could increase the sensitivity of the LIBS technique. This study proved that an optimized value of the etching time of Si during etching by chemical processes and short delay times are required. Plasma parameters [the electron temperature ( T e) and the electron number density ( N e)] were calculated from measured SP- and DP-LIBS spectra. The most important result of this study is the much higher DP-LIBS intensity observed on Si (100) as compared to Si (111) for measurements under the same experimental conditions. This study could provide important reference data for the design and optimization of DP-LIBS systems involved in plasma-facing components diagnostics.

  13. Material design of plasma-enhanced chemical vapour deposition SiCH films for low-k cap layers in the further scaling of ultra-large-scale integrated devices-Cu interconnects

    International Nuclear Information System (INIS)

    Cap layers for Cu interconnects in ultra-large-scale integrated devices (ULSIs), with a low dielectric constant (k-value) and strong barrier properties against Cu and moisture diffusion, are required for the future further scaling of ULSIs. There is a trade-off, however, between reducing the k-value and maintaining strong barrier properties. Using quantum mechanical simulations and other theoretical computations, we have designed ideal dielectrics: SiCH films with Si–C2H4–Si networks. Such films were estimated to have low porosity and low k; thus they are the key to realizing a cap layer with a low k and strong barrier properties against diffusion. For fabricating these ideal SiCH films, we designed four novel precursors: isobutyl trimethylsilane, diisobutyl dimethylsilane, 1, 1-divinylsilacyclopentane and 5-silaspiro [4,4] noname, based on quantum chemical calculations, because such fabrication is difficult by controlling only the process conditions in plasma-enhanced chemical vapor deposition (PECVD) using conventional precursors. We demonstrated that SiCH films prepared using these newly designed precursors had large amounts of Si–C2H4–Si networks and strong barrier properties. The pore structure of these films was then analyzed by positron annihilation spectroscopy, revealing that these SiCH films actually had low porosity, as we designed. These results validate our material and precursor design concepts for developing a PECVD process capable of fabricating a low-k cap layer. (paper)

  14. Contributions of Organic Vapours to Atmospheric Nanoparticle Growth

    Science.gov (United States)

    Wang, L.; Xu, W.; Khalizov, A. F.; Zhang, R.

    2010-12-01

    Atmospheric aerosol particles alter radiative balance of the earth-atmosphere system, impact the regional and global climate, and pose negative effects on human health. Aerosol nucleation events have been frequently observed under various tropospheric conditions and account for a major fraction of the total aerosol population. Although a number of studies suggest that organics are involved in both new particle formation and their subsequent growth, the fundamental chemical processes responsible for organic vapours’ contribution remain poorly understood. This work will focus on laboratory studies on the role of various organic vapours in sulphuric acid nanoparticles growth. Sulfuric acid nanoparticles of 4-20 nm diameter size are generated from homogeneous binary nucleation of H2SO4 and H2O vapors in a laminar flow reactor. The growth factor of H2SO4 nanoparticles exposed to organics including methyglyoxal, ethanol, 1-butanol, 1-heptanol, 1-decanol, and cis-pinonic acid is measured using a nano-tandem differential mobility analyzer (nano-TDMA). Also studied is the potential synergistic effect in the presence of two or more organic vapours to which sulphuric acid nanoparticles are exposed. The chemical compositions of H2SO4 particles exposed to the organics are analyzed by a thermal desorption-ion drift-chemical ionization mass spectrometer (TD-ID-CIMS), and the spectroscopic evolution of functional groups in H2SO4 particles of ~40 nm diameter size, deposited on ZnSe crystal and subsequently exposed to organics, is studied using attenuated total reflection-Fourier transform infrared spectroscopy (ATR-FT-IR). The combined techniques are used to elucidate the key factors in controlling atmospheric nanoparticle growth.

  15. Mesoscale elucidation of laser-assisted chemical deposition of Sn nanostructured electrodes

    International Nuclear Information System (INIS)

    Nanostructured tin (Sn) is a promising high-capacity electrode for improved performance in lithium-ion batteries for electric vehicles. In this work, Sn nanoisland growth for nanostructured electrodes assisted by the pulse laser irradiation has been investigated based on a mesoscale modeling formalism. The influence of pertinent processing conditions, such as pulse duration, heating/cooling rates, and atom flux, on the Sn nanostructure formation is specifically considered. The interaction between the adsorbed atom and the substrate, represented by the adatom diffusion barrier, is carefully studied. It is found that the diffusion barrier predominantly affects the distribution of Sn atoms. For both α-Sn and β-Sn, the averaged coordination number is larger than 3 when the diffusion barrier equals to 0.15 eV. The averaged coordination number decreases as the diffusion barrier increases. The substrate temperature, which is determined by heating/cooling rates and pulse duration, can also affect the formation of Sn nanoislands. For α-Sn, when applied low heating/cooling rates, nanoislands cannot form if the diffusion barrier is larger than 0.35 eV

  16. Selective removal technology using chemical etching and excimer assistance in precision recycle of color filter

    Institute of Scientific and Technical Information of China (English)

    Pai shan PA

    2011-01-01

    Color filters are produced using semiconductor production techniques although problems with Iow yield remain to be addressed. This study presents a new means of selective removal using excimer irradiation, chemical etching, or electrochemical machining on the fifth generation TFT LCDs. The selective removal of microstructure layers from the color filter surface of an optoelectronic flat panel display, as well as complete removal of the ITO thin-films, RGB layer, or resin black matrix (BM) layer from the substrate is possible. Individual defective film layers can be removed, or all films down to the Cr layer or bare glass can be completely eliminated. Experimental results demonstrate that defective ITO thin-films, RGB layers, or the resin BM layer can now be recycled with a great precision. When the ITO or RGB layer proves difficult to remove, excimer light can be used to help with removal. During this recycling process, the use of 225 nm excimer irradiation before chemical etching, or electrochemical machining, makes removal of stubborn film residues easy, effectively improving the quality of recycled color filters and reducing fabrication cost.

  17. Graphene composites containing chemically bonded metal oxides

    Indian Academy of Sciences (India)

    K Pramoda; S Suresh; H S S Ramakrishna Matte; A Govindaraj

    2013-08-01

    Composites of graphene involving chemically bonded nano films of metal oxides have been prepared by reacting graphene containing surface oxygen functionalities with metal halide vapours followed by exposure to water vapour. The composites have been characterized by electron microscopy, atomic force microscopy and other techniques. Magnetite particles chemically bonded to graphene dispersible in various solvents have been prepared and they exhibit fairly high magnetization.

  18. Tuning the Electrical Properties of Graphene via Nitrogen Plasma-Assisted Chemical Modification.

    Science.gov (United States)

    Jung, Min Wook; Song, Wooseok; Jung, Dae Sung; Lee, Sun Sook; Park, Chong-Yun; An, Ki-Seok

    2016-03-01

    The control in electrical properties of graphene is essentially required in order to realize graphenebased nanoelectronics. In this study, N-doped graphene was successfully obtained via nitrogen plasma treatment. Graphene was synthesized on copper foil using thermal chemical vapor deposition. After N2 plasma treatment, the G-band of the graphene was blueshifted and the intensity ratio of 2D- to G-bands decreased with increasing the plasma power. Pyrrolic-N bonding configuration induced by N2 plasma treatment was studied by X-ray photoelectron spectroscopy. Remarkably, electrical characterization including Hall measurement and I-V characteristics of the N-doped graphene exhibit semiconducting behavior as well as the n-type doping effect. PMID:27455703

  19. Characterization of tribo-layers on self-lubricating plasma-assisted chemical-vapor-deposited TiN coatings

    International Nuclear Information System (INIS)

    Recently, several new solid lubricants and modern lubrication concepts have been developed to achieve lower friction and wear and thus longer lifetime in severe tribological applications. The aim of this study is to characterize tribo-layers formed during ball-on-disc testing on low-friction, Cl-containing TiN coatings deposited by plasma assisted chemical vapor deposition and to clarify their formation mechanism. Characterization of the transfer layers was done by optical microscopy, optical profilometry, Raman spectroscopy, Auger electron spectroscopy and X-ray photoelectron spectroscopy. Differential scanning calorimetry was used to provide information on the chlorine-influenced chemical reactions of the coatings in ambient air. Iron oxide layers of a thickness in the nm-range have been found on low-chlorine containing TiN coatings (3 at.% Cl) rutile layers were preferably formed, resulting in friction coefficients below 0.2. This self-lubrication mechanism can be explained by the in-situ formation of easy-shearable titanium oxides in the contact zone in the presence of humidity and oxygen

  20. Interactions of fission product vapours with aerosols

    Energy Technology Data Exchange (ETDEWEB)

    Benson, C.G.; Newland, M.S. [AEA Technology, Winfrith (United Kingdom)

    1996-12-01

    Reactions between structural and reactor materials aerosols and fission product vapours released during a severe accident in a light water reactor (LWR) will influence the magnitude of the radiological source term ultimately released to the environment. The interaction of cadmium aerosol with iodine vapour at different temperatures has been examined in a programme of experiments designed to characterise the kinetics of the system. Laser induced fluorescence (LIF) is a technique that is particularly amenable to the study of systems involving elemental iodine because of the high intensity of the fluorescence lines. Therefore this technique was used in the experiments to measure the decrease in the concentration of iodine vapour as the reaction with cadmium proceeded. Experiments were conducted over the range of temperatures (20-350{sup o}C), using calibrated iodine vapour and cadmium aerosol generators that gave well-quantified sources. The LIF results provided information on the kinetics of the process, whilst examination of filter samples gave data on the composition and morphology of the aerosol particles that were formed. The results showed that the reaction of cadmium with iodine was relatively fast, giving reaction half-lives of approximately 0.3 s. This suggests that the assumption used by primary circuit codes such as VICTORIA that reaction rates are mass-transfer limited, is justified for the cadmium-iodine reaction. The reaction was first order with respect to both cadmium and iodine, and was assigned as pseudo second order overall. However, there appeared to be a dependence of aerosol surface area on the overall rate constant, making the precise order of the reaction difficult to assign. The relatively high volatility of the cadmium iodide formed in the reaction played an important role in determining the composition of the particles. (author) 23 figs., 7 tabs., 22 refs.

  1. Vapour liquid equilibrium measurements for process design

    OpenAIRE

    Uusi-Kyyny, Petri

    2004-01-01

    In recent years it has become increasingly important to develop new oxygenate and isooctane technologies and processes that meet the continuously stricter environmental requirements. Some of the new process schemes use renewable raw materials in order to meet the European Union biofuel requirements. One of the most important requirements for the design of such separation processes includes the knowledge of vapour liquid equilibrium (VLE) behaviour. There are methods to estimate VLE but for th...

  2. A water vapour monitor at Paranal Observatory

    Science.gov (United States)

    Kerber, Florian; Rose, Thomas; Chacón, Arlette; Cuevas, Omar; Czekala, Harald; Hanuschik, Reinhard; Momany, Yazan; Navarrete, Julio; Querel, Richard R.; Smette, Alain; van den Ancker, Mario E.; Cure, Michel; Naylor, David A.

    2012-09-01

    We present the performance characteristics of a water vapour monitor that has been permanently deployed at ESO's Paranal observatory as a part of the VISIR upgrade project. After a careful analysis of the requirements and an open call for tender, the Low Humidity and Temperature Profiling microwave radiometer (LHATPRO), manufactured by Radiometer Physics GmbH (RPG), has been selected. The unit measures several channels across the strong water vapour emission line at 183 GHz, necessary for resolving the low levels of precipitable water vapour (PWV) that are prevalent on Paranal (median ~2.5 mm). The unit comprises the above humidity profiler (183-191 GHz), a temperature profiler (51-58 GHz), and an infrared radiometer (~10 μm) for cloud detection. The instrument has been commissioned during a 2.5 week period in Oct/Nov 2011, by comparing its measurements of PWV and atmospheric profiles with the ones obtained by 22 radiosonde balloons. In parallel an IR radiometer (Univ. Lethbridge) has been operated, and various observations with ESO facility spectrographs have been taken. The RPG radiometer has been validated across the range 0.5 - 9 mm demonstrating an accuracy of better than 0.1 mm. The saturation limit of the radiometer is about 20 mm. Currently, the radiometer is being integrated into the Paranal infrastructure to serve as a high time-resolution monitor in support of VLT science operations. The water vapour radiometer's ability to provide high precision, high time resolution information on this important aspect of the atmosphere will be most useful for conducting IR observations with the VLT under optimal conditions.

  3. Formation and Yield of Multi-Walled Carbon Nanotubes Synthesized via Chemical Vapour Deposition Routes Using Different Metal-Based Catalysts of FeCoNiAl, CoNiAl and FeNiAl-LDH

    Directory of Open Access Journals (Sweden)

    Mohd Zobir Hussein

    2014-11-01

    Full Text Available Multi-walled carbon nanotubes (MWCNTs were prepared via chemical vapor deposition (CVD using a series of different catalysts, derived from FeCoNiAl, CoNiAl and FeNiAl layered double hydroxides (LDHs. Catalyst-active particles were obtained by calcination of LDHs at 800 °C for 5 h. Nitrogen and hexane were used as the carrier gas and carbon source respectively, for preparation of MWCNTs using CVD methods at 800 °C. MWCNTs were allowed to grow for 30 min on the catalyst spread on an alumina boat in a quartz tube. The materials were subsequently characterized through X-ray diffraction, Fourier transform infrared spectroscopy, surface area analysis, field emission scanning electron microscopy and transmission electron microscopy. It was determined that size and yield of MWCNTs varied depending on the type of LDH catalyst precursor that is used during synthesis. MWCNTs obtained using CoNiAl-LDH as the catalyst precursor showed smaller diameter and higher yield compared to FeCoNiAl and FeNiAl LDHs.

  4. Characterization of TiO{sub 2} thin films obtained by metal-organic chemical vapour deposition; Caracterizacao de filmes finos de TiO{sub 2} obtidos por deposicao quimica em fase vapor

    Energy Technology Data Exchange (ETDEWEB)

    Carriel, Rodrigo Crociati

    2015-07-01

    Titanium dioxide (TiO{sub 2}) thin films were grown on silicon substrate (100) by MOCVD process (chemical deposition of organometallic vapor phase). The films were grown at 400, 500, 600 and 700 ° C in a conventional horizontal equipment. Titanium tetraisopropoxide was used as source of both oxygen and titanium. Nitrogen was used as carrier and purge gas. X-ray diffraction technique was used for the characterization of the crystalline structure. Scanning electron microscopy with field emission gun was used to evaluate the morphology and thickness of the films. The films grown at 400 and 500°C presented anatase phase. The film grown at 600ºC presented rutile besides anatase phase, while the film grown at 700°C showed, in addition to anatase and rutile, brookite phase. In order to evaluate the electrochemical behavior of the films cyclic voltammetry technique was used. The tests revealed that the TiO2 films formed exclusively by the anatase phase exhibit strong capacitive character. The anodic current peak is directly proportional to the square root of the scanning rate for films grown at 500ºC, suggesting that linear diffusion is the predominant mechanism of cations transport. It was observed that in the film grown during 60 minutes the Na+ ions intercalation and deintercalation easily. The films grown in the other conditions did not present the anodic current peak, although charge was accumulated in the film. (author)

  5. Synthesis of CdS nanostructures using template-assisted ammonia-free chemical bath deposition

    Science.gov (United States)

    Preda, N.; Enculescu, M.; Gherendi, F.; Matei, E.; Toimil-Molares, M. E.; Enculescu, I.

    2012-09-01

    CdS micro- and nano-structures (micro/nanotubes and nanostructured films) were obtained by ammonia-free chemical bath deposition using polymer templates (ion track-etched polycarbonate membranes and poly(styrene-hydroxyethyl methacrylate) nanosphere arrays). The semiconductor structures were characterized by scanning electron microscopy (SEM), X-ray diffraction (XRD), optical absorption, photoluminescence and electrical measurements. The diameters of CdS tubes are between 300 nm and few microns and the lengths are up to tens of micrometers. The SEM images prove that the CdS films are nanostructured due to the deposition on the polymer nanosphere arrays. For both CdS structures (tubes and films) the XRD patterns show a hexagonal phase. The optical studies reveal a band gap value of about 2.5-2.6 eV and a red luminescence at ˜1.77 eV. A higher increase of conductivity is observed for illuminating the CdS nanostructured film when compared to the simple semiconductor film. This is a consequence of the periodic patterning induced by the polymer nanosphere array.

  6. Synthesis and characterization of GaN nanowires by a catalyst assisted chemical vapor deposition

    Energy Technology Data Exchange (ETDEWEB)

    Wei Xiaofeng [College of Physics and Electronics, Shandong Normal University, Jinan, 250014 (China); Shi Feng, E-mail: sf751106@163.com [College of Physics and Electronics, Shandong Normal University, Jinan, 250014 (China)

    2011-09-15

    GaN nanowires have been fabricated on Si(1 1 1) substrates by chemical vapor deposition (CVD) method with NiCl{sub 2} as catalyst and their compositions, microstructures, morphologies and light emitting properties were characterized by X-ray diffraction (XRD), FT-IR spectrophotometer (FTIR), scanning electron microscope (SEM), high-resolution transmission electron microscope (HRTEM), Raman spectroscopy and photoluminescence (PL). The results demonstrate that the nanowires are single-crystal GaN with hexagonal wurtzite structure and high crystalline quality, having the size of 20-50 nm in diameter and several tens of microns in length with some nano-droplets on their tips, which reveals that the growth mechanism of GaN nanowires agrees with vapor-liquid-solid (VLS) process. Five first-order Raman active phonon bands move to low shift and A{sub 1}(TO), E{sub 1}(TO), and E{sub 2} (high) bands are overlapped and broaden, which is caused by uncertainty in the phonon wave vector. Five non-first-order active Raman phonons also appear, which is caused by the small dimension and high surface disorder degree. A blue-shift of the band-gap emission occurs due to quantum confinement effect.

  7. Chemo-selective high yield microwave assisted reaction turns cellulose to green chemicals.

    Science.gov (United States)

    Hassanzadeh, Salman; Aminlashgari, Nina; Hakkarainen, Minna

    2014-11-01

    Exceptionally high cellulose liquefaction yields, up to 87% as calculated from the amount of solid residue, were obtained under mild conditions by utilizing the synergistic effect of microwave radiation and acid catalysis. The effect of processing conditions on degradation products was fingerprinted by rapid laser desorption ionization-mass spectrometry (LDI-MS) method. The reaction was chemo-tunable, enabling production of glucose (Glc) or levulinic acid (LeA) at significantly high selectivity and yields, the relative molar yields being up to 50 and 69%, respectively. A turning point from pure depolymerization to glucose to further degradation to levulinic acid and formic acid was observed at approximately 50% liquefaction or above 140 °C. This was accompanied by the formation of small amounts of solid spherical carbonized residues. The reaction was monitored by multiple analytical techniques. The high yields were connected to the ability of the process to break the strong secondary interactions in cellulose. The developed method has great potential for future production of green platform chemicals. PMID:25129766

  8. Rapid, facile microwave-assisted synthesis of xanthan gum grafted polyaniline for chemical sensor.

    Science.gov (United States)

    Pandey, Sadanand; Ramontja, James

    2016-08-01

    Grafting method, through microwave radiation procedure is extremely productive in terms of time consumption, cost effectiveness and environmental friendliness. In this study, conductive and thermally stable composite (mwXG-g-PANi) was synthesized by grafting of aniline (ANi) on to xanthan gum (XG) using catalytic weight of initiator, ammonium peroxydisulfate in the process of microwave irradiation in an aqueous medium. The synthesis of mwXG-g-PANi were confirm by FTIR, XRD, TGA, and SEM. The influence of altering the microwave power, exposure time of microwave, concentration of monomer and the amount of initiator of graft polymerization were studied over the grafting parameters, for example, grafting percentage (%G) and grafting efficiency (%E). The maximum %G and %E achieved was 172 and 74.13 respectively. The outcome demonstrates that the microwave irradiation strategy can increase the reaction rate by 72 times over the conventional method. Electrical conductivity of XG and mwXG-g-PANi composite film was performed. The fabricated grafted sample film were then examined for the chemical sensor. The mwXG-g-PANi, effectively integrated and handled, are NH3 sensitive and exhibit a rapid sensing in presence of NH3 vapor. Chemiresistive NH3 sensors with superior room temperature sensing performance were produced with sensor response of 905 at 1ppb and 90% recovery within few second. PMID:27118045

  9. Consistent vapour-liquid equilibrium data containing lipids

    DEFF Research Database (Denmark)

    Cunico, Larissa; Ceriani, Roberta; Sarup, Bent;

    Consistent physical and thermodynamic properties of pure components and their mixtures are important for process design, simulation, and optimization as well as design of chemical based products. In the case of lipids, it was observed a lack of experimental data for pure compounds and also for...... their mixtures in open literature, what makes necessary the development of reliable predictive models based on limited data. To contribute to the missing data, measurements of isobaric vapour-liquid equilibrium (VLE) data of three binary mixtures at two different pressures were performed at State...... distillates while systems 2 and 3 are relevant in the purification steps of biodiesel and bioglycerin. It should be highlighted that there is no such data in the open literature, not only for the specific compounds we selected but also for the combination of the classes of compounds considered in this work...

  10. Development of Geothermally Assisted Process for Production of Liquid Fuels and Chemicals from Wheat Straw

    Energy Technology Data Exchange (ETDEWEB)

    Murphy, V.G.; Linden, J.C.; Moreira, A.R.; Lenz, T.G.

    1981-06-01

    Recently there has been much interest in developing processes for producing liquid fuels from renewable resources. The most logical long term approach in terms of economics derives the carbohydrate substrate for fermentation from the hydrolysis of cellulosic crop and forest residues rather than from grains or other high grade food materials (1,2). Since the presence of lignin is the main barrier to the hydrolysis of cellulose from lignocellulosic materials, delignification processes developed by the wood pulping industry have been considered as possible prehydrolysis treatments. The delignification process under study in our laboratory is envisioned as a synthesis of two recently developed pulping processes. In the first step, called autohydrolysis, hot water is used directly to solubilize hemicellulose and to depolymerize lignin (3). Then, in a second step known as organosolv pulping (4), the autohydrolyzed material is extracted with aqueous alcohol. A s shown in Figure 1, this process can separate the original lignocellulosic material into three streams--hemicellulose in water, lignin in aqueous alcohol, and a cellulose pulp. Without further mechanical milling, delignified cellulose can be enzymatically hydrolyzed at 45-50 C to greater than 80% theoretical yield of glucose using fungal cellulases (5, 6). The resulting glucose syrup can then be fermented by yeast to produce ethanol or by selected bacteria to produce acetone and butanol or acetic and propionic acids (7). One objection to such a process, however, is the large energy input that is required. In order to extend our supplies of liquid fuels and chemicals, it is important that the use of fossil fuels in any lignocellulosic conversion process be minimized. The direct use of geothermal hot water in carrying out the autohydrolysis and extraction operations, therefore, seems especially attractive. On the one hand, it facilitates the conversion of non-food biomass to fuels and chemicals without wasting fossil

  11. Program of technical assistance to the Organization for the Prohibition of Chemical Weapons - lessons learned from the U.S. program of technical assistance to IAEA safeguards. Final report

    Energy Technology Data Exchange (ETDEWEB)

    NONE

    1995-06-01

    The Defense Nuclear Agency is sponsoring a technical study of the requirements of a vehicle to meet the OPCW`s future needs for enhanced chemical weapons verification capabilities. This report provides information about the proven mechanisms by which the U.S. provided both short- and long-term assistance to the IAEA to enhance its verification capabilities. Much of the technical assistance has generic application to international organizations verifying compliance with disarmament treaties or conventions. In addition, some of the equipment developed by the U.S. under the existing arrangements can be applied in the verification of other disarmament treaties or conventions. U.S. technical assistance to IAEA safeguards outside of the IAEA`s regular budget proved to be necessary. The U.S. technical assistance was successful in improving the effectiveness of IAEA safeguards for its most urgent responsibilities and in providing the technical elements for increased IAEA {open_quotes}readiness{close_quotes} for the postponed responsibilities deemed important for U.S. policy objectives. Much of the technical assistance was directed to generic subjects and helped to achieve a system of international verification. It is expected that the capabilities of the Organization for the Prohibition of Chemical Weapons (OPCW) to verify a state`s compliance with the {open_quotes}Chemical Weapons Convention{close_quotes} will require improvements. This report presents 18 important lessons learned from the experience of the IAEA and the U.S. Program of Technical Assistance to IAEA Safeguards (POTAS), organized into three tiers. Each lesson is presented in the report in the context of the difficulty, need and history in which the lesson was learned. Only the most important points are recapitulated in this executive summary.

  12. Vapour Recoil Effect on a Vapour-Liquid System with a Deformable Interface

    Institute of Scientific and Technical Information of China (English)

    LIU Rong; LIU Qiu-Sheng

    2006-01-01

    @@ A new two-sided model of vapour-Iiquid layer system with a deformable interface is proposed. In this model,the vapour recoil effect on the Marangoni-Bénard instability of a thin evaporating liquid layer can be examined only when the interface deflexion is considered. The instability of a liquid layer undergoing steady evaporation induced by the coupling of vapour recoil effect and the Marangoni effect is analysed using a linear stability theory.We modify and develop the Chebyshev-Tau method to solve the instability problem of a deformable interface system by introducing a new equation at interface boundary. New instability behaviour of the system has been found and the self-amplification mechanism between the evaporation flux and the interface deflexion is discussed.

  13. Microwave-Assisted Extraction, Chemical Structures, and Chain Conformation of Polysaccharides from a Novel Cordyceps Sinensis Fungus UM01.

    Science.gov (United States)

    Cheong, Kit-Leong; Wang, Lan-Ying; Wu, Ding-Tao; Hu, De-Jun; Zhao, Jing; Li, Shao-Ping

    2016-09-01

    Cordyceps sinensis is a well-known tonic food with broad medicinal properties. The aim of the present study was to investigate the optimization of microwave-assisted extraction (MAE) and characterize chemical structures and chain conformation of polysaccharides from a novel C. sinensis fungus UM01. Ion-exchange and gel filtration chromatography were used to purify the polysaccharides. The chemical structure of purified polysaccharide was determined through gas chromatography-mass spectrometry. Moreover, high performance size exclusion chromatography combined with refractive index detector and multiangle laser light scattering were conducted to analyze the molecular weight (Mw ) and chain conformation of purified polysaccharide. Based on the orthogonal design L9 , optimal MAE conditions could be obtained through 1300 W of microwave power, with a 5-min irradiation time at a solid to water ratio of 1:60, generating the highest extraction yield of 6.20%. Subsequently, the polysaccharide UM01-S1 was purified. The UM01-S1 is a glucan-type polysaccharide with a (1→4)-β-d-glucosyl backbone and branching points located at O-3 of Glcp with a terminal-d-Glcp. The Mw , radius of gyration (Rg ) and hydrodynamic radius (Rh ) of UM01-S1 were determined as 5.442 × 10(6)  Da, 21.8 and 20.2 nm, respectively. Using the polymer solution theory, the exponent (ν) value of the power law function was calculated as 0.38, and the shape factor (ρ = Rg /Rh ) was 1.079, indicating that UM01-S1 has a sphere-like conformation with a branched structure in an aqueous solution. These results provide fundamental information for the future application of polysaccharides from cultured C. sinensis in health and functional food area. PMID:27514485

  14. FAF-Drugs2: Free ADME/tox filtering tool to assist drug discovery and chemical biology projects

    Directory of Open Access Journals (Sweden)

    Miteva Maria A

    2008-09-01

    Full Text Available Abstract Background Drug discovery and chemical biology are exceedingly complex and demanding enterprises. In recent years there are been increasing awareness about the importance of predicting/optimizing the absorption, distribution, metabolism, excretion and toxicity (ADMET properties of small chemical compounds along the search process rather than at the final stages. Fast methods for evaluating ADMET properties of small molecules often involve applying a set of simple empirical rules (educated guesses and as such, compound collections' property profiling can be performed in silico. Clearly, these rules cannot assess the full complexity of the human body but can provide valuable information and assist decision-making. Results This paper presents FAF-Drugs2, a free adaptable tool for ADMET filtering of electronic compound collections. FAF-Drugs2 is a command line utility program (e.g., written in Python based on the open source chemistry toolkit OpenBabel, which performs various physicochemical calculations, identifies key functional groups, some toxic and unstable molecules/functional groups. In addition to filtered collections, FAF-Drugs2 can provide, via Gnuplot, several distribution diagrams of major physicochemical properties of the screened compound libraries. Conclusion We have developed FAF-Drugs2 to facilitate compound collection preparation, prior to (or after experimental screening or virtual screening computations. Users can select to apply various filtering thresholds and add rules as needed for a given project. As it stands, FAF-Drugs2 implements numerous filtering rules (23 physicochemical rules and 204 substructure searching rules that can be easily tuned.

  15. Wagner liquid-vapour pressure equation constants from a simple methodology

    Energy Technology Data Exchange (ETDEWEB)

    Forero G, Luis A., E-mail: forerogaviria@yahoo.com [Pulp and Paper Research Group, Faculty of Chemical Engineering, Universidad Pontificia Bolivariana, Circular 1a 70-01 Medellin, Antioquia (Colombia); Velasquez J, Jorge A., E-mail: jorge.velasquezj@upb.edu.co [Pulp and Paper Research Group, Faculty of Chemical Engineering, Universidad Pontificia Bolivariana, Circular 1a 70-01 Medellin, Antioquia (Colombia)

    2011-08-15

    Highlights: > Simple methodology to estimate Wagner vapor pressure equation constants. > Full range liquid-vapor pressure predictions from limited data. > Constants satisfy the Waring criterion. - Abstract: A methodology to determine the A, B, C, and D constants from the Wagner equation is presented. The constants for 274 pure substances were determined by minimization in the sum of the squares of the relative deviation in liquid vapour pressure. For 69 chemical compounds, vapour pressures exist over the range from 1 kPa to the critical pressure and an average absolute deviation in vapour pressure of 0.039% was calculated. Using Antoine equation coefficients and initial guesses for a correlation in terms of the acentric factor, Wagner constants were estimated for substances with limited data within the range from (1 to 200) kPa. To validate the proposed methodology, vapour pressure predictions from 1 kPa to the critical pressure were made for 52 substances using Wagner parameters estimated from limited data. A value of 0.27% in average absolute deviation results for those substances. Finally the Waring criterion was applied to check the constants presented in this paper.

  16. Iron selenide films by aerosol assisted chemical vapor deposition from single source organometallic precursor in the presence of surfactants

    Energy Technology Data Exchange (ETDEWEB)

    Hussain, Raja Azadar [Department of Chemistry, Quaid-i-Azam University, 45320 Islamabad (Pakistan); Badshah, Amin, E-mail: aminbadshah@yahoo.com [Department of Chemistry, Quaid-i-Azam University, 45320 Islamabad (Pakistan); Younis, Adnan [School of Materials Science and Engineering, University of New South Wales, Sydney 2052, NSW (Australia); Khan, Malik Dilshad [Department of Chemistry, Quaid-i-Azam University, 45320 Islamabad (Pakistan); Akhtar, Javeed [Department of Physics, COMSATS Institute of Information Technology, Park Road, Chak Shahzad, Islamabad (Pakistan)

    2014-09-30

    This article presents the synthesis and characterization (multinuclear nuclear magnetic resonance, Fourier transform infrared spectroscopy, carbon–hydrogen–nitrogen–sulfur analyzer, atomic absorption spectrometry and thermogravimetric analysis) of a single source organometallic precursor namely 1-acetyl-3-(4-ferrocenylphenyl)selenourea for the fabrication of iron selenide (FeSe) films on glass substrates using aerosol assisted chemical vapor deposition (AACVD). The changes in the morphologies of the films have been monitored by the use of two different surfactants i.e. triton X-100 and tetraoctylphosphonium bromide during AACVD. The role of surfactant has been evaluated by examining the interaction of the surfactants with the precursor by using UV–vis spectroscopy and cyclic voltammetry. The fabricated FeSe films have been characterized with powder X-ray diffraction, scanning electron microscopy and energy dispersive spectroscopy. - Highlights: • Ferrocene incorporated selenourea (FIS) has been synthesized and characterized. • FeSe thin films have been fabricated from FIS. • Mechanism of film growth was studied with cyclic voltammetry and UV–vis spectroscopy.

  17. A melamine-assisted chemical blowing synthesis of N-doped activated carbon sheets for supercapacitor application

    Science.gov (United States)

    Wang, Yiliang; Xuan, Huaqing; Lin, Gaoxin; Wang, Fan; Chen, Zhi; Dong, Xiaoping

    2016-07-01

    N-doped activated carbon sheets (NACS) have been successfully synthesized using glucose as carbon source via melamine-assisted chemical blowing and sequent KOH-activation method. The obtained carbon material possesses a sheet-like morphology with ultrathin thickness, hierarchical micro/mesoporous structure, high specific surface area (up to 1997.5 m2 g-1) and high pore volume (0.94 cm3 g-1). Besides, NACS material with a nitrogen content of 3.06 wt% presents a maximum specific capacitance of 312 F g-1 at a current density of 0.5 A g-1 in 6 M KOH aqueous electrolyte due to the cocontribution of double layer capacitance and pseudocapacitance. It also displays good rate performance (246 F g-1 at 30 A g-1) and cycle stability (∼91.3% retention after 4000 galvanostatic charge-discharge cycles). The assembled NACS-based symmetric capacitor exhibits a maximum energy density of 20.2 Wh kg-1 at a power density of 448 W kg-1 within a voltage range of 0-1.8 V in 0.5 M Na2SO4 aqueous electrolyte. Thus, the unique porous sheet structure and nitrogen-doping characteristic endue the electrode material a potential application for high-performance supercapacitors.

  18. Pulsed Chemical Oxygen Iodine Lasers Excited by Pulse Gas Discharge with the Assistance of Surface Sliding Discharge Pre-ionization

    International Nuclear Information System (INIS)

    Continuous-wave chemical oxygen-iodine lasers (COILs) can be operated in a pulsed operation mode to obtain a higher peak power. The key point is to obtain a uniform and stable glow discharge in the mixture of singlet delta oxygen and iodide. We propose using an electrode system with the assistance of surface sliding pre-ionization to solve the problem of the stable glow discharge with a large aperture. The pre-ionization unit is symmetrically fixed on the plane of the cathode surface. A uniform and stable glow discharge is obtained in a mixture of iodide (such as CH3I) and nitrogen at the specific deposition energy of 4.5 J/L, pressure of 1.99–3.32 kPa, aperture size of 11 cm × 10 cm. The electrode system is applied in a pulsed COIL. Laser energy up to 4.4 J is obtained and the specific energy output is 2 J/L. (fundamental areas of phenomenology(including applications))

  19. Fabrication of silicon nanowire arrays by near-field laser ablation and metal-assisted chemical etching

    Science.gov (United States)

    Brodoceanu, D.; Alhmoud, H. Z.; Elnathan, R.; Delalat, B.; Voelcker, N. H.; Kraus, T.

    2016-02-01

    We present an elegant route for the fabrication of ordered arrays of vertically-aligned silicon nanowires with tunable geometry at controlled locations on a silicon wafer. A monolayer of transparent microspheres convectively assembled onto a gold-coated silicon wafer acts as a microlens array. Irradiation with a single nanosecond laser pulse removes the gold beneath each focusing microsphere, leaving behind a hexagonal pattern of holes in the gold layer. Owing to the near-field effects, the diameter of the holes can be at least five times smaller than the laser wavelength. The patterned gold layer is used as catalyst in a metal-assisted chemical etching to produce an array of vertically-aligned silicon nanowires. This approach combines the advantages of direct laser writing with the benefits of parallel laser processing, yielding nanowire arrays with controlled geometry at predefined locations on the silicon surface. The fabricated VA-SiNW arrays can effectively transfect human cells with a plasmid encoding for green fluorescent protein.

  20. Iron selenide films by aerosol assisted chemical vapor deposition from single source organometallic precursor in the presence of surfactants

    International Nuclear Information System (INIS)

    This article presents the synthesis and characterization (multinuclear nuclear magnetic resonance, Fourier transform infrared spectroscopy, carbon–hydrogen–nitrogen–sulfur analyzer, atomic absorption spectrometry and thermogravimetric analysis) of a single source organometallic precursor namely 1-acetyl-3-(4-ferrocenylphenyl)selenourea for the fabrication of iron selenide (FeSe) films on glass substrates using aerosol assisted chemical vapor deposition (AACVD). The changes in the morphologies of the films have been monitored by the use of two different surfactants i.e. triton X-100 and tetraoctylphosphonium bromide during AACVD. The role of surfactant has been evaluated by examining the interaction of the surfactants with the precursor by using UV–vis spectroscopy and cyclic voltammetry. The fabricated FeSe films have been characterized with powder X-ray diffraction, scanning electron microscopy and energy dispersive spectroscopy. - Highlights: • Ferrocene incorporated selenourea (FIS) has been synthesized and characterized. • FeSe thin films have been fabricated from FIS. • Mechanism of film growth was studied with cyclic voltammetry and UV–vis spectroscopy

  1. CHEMICAL CHARACTERIZATION OF PULP COMPONENTS IN UNBLEACHED SOFTWOOD KRAFT FIBERS RECYCLED WITH THE ASSISTANCE OF A LACCASE/HBT SYSTEM

    Directory of Open Access Journals (Sweden)

    Luiz Pereira Ramos

    2007-11-01

    Full Text Available Oxidative treatments, without and with assistance of a Laccase-Mediator System (LMS, were characterized in relation to their effects on the chemical composition and strength properties of the fibrous fraction of an unbleached recycled softwood kraft pulp. The LMS, composed of a Trametes hirsuta laccase extract and 1-hydroxybenzotriazole (HBT, was applied on the fibrous fraction of a recycled pulp at low consistency under continuous stirring and oxygen bubbling. Control treatments adding neither the enzyme nor the mediator were also considered. The LMS treatment caused a partial reversion of the detrimental effects of hornification. A considerable increase in the amount of carbonyl groups on the lignin structure was observed as a result of the enzyme treatment. The amount of extractives in ethanol:toluene also increased after the enzymatic treatment, and the dioxane-soluble kraft lignin underwent a noticeable decrease in its apparent molecular mass. This latter effect was readily attributed to the hydrolysis of aryl-ether bonds that survived the severity employed in the pulping process. These observations were useful to explain why LMS-recycled fibers produce handsheets with 9.4% better tensile strength than the control pulps.

  2. Isotopic enrichment of diamond using microwave plasma-assisted chemical vapor deposition with high carbon conversion efficiency

    International Nuclear Information System (INIS)

    Isotopically-controlled diamond crystals were grown using microwave plasma-assisted chemical vapor deposition. First, the highest carbon isotopic enrichment and their controllability were examined. Although the highest 12C isotopic ratio of 99.998% was achieved using methane with an isotopic ratio of 99.999%, the memory effect of an unintended carbon isotope was found to be considerable when the carbon isotopic ratio of feeding methane was tuned for isotopic multilayer formation. Secondly, a unique gas feeding sequence was proposed for increasing the carbon conversion efficiency from methane to diamond. Increasing the conversion efficiency is done by finding a suitable balance between the methane feeding rate and the carbon consumption rate for diamond growth. A high conversion efficiency of 70% was obtained for a polycrystalline diamond with a high 12C isotopic ratio of 99.997%. - Highlights: • Isotopic control of diamond films was investigated. • A high microwave power density condition was applied for diamond growth. • The controllable range of the carbon isotopic ratio was demonstrated. • Diamond films having the highest 12C carbon isotopic enrichment were grown. • High carbon conversion efficiency of 70% was achieved

  3. Modelling of vapour explosion in stratified geometrie

    International Nuclear Information System (INIS)

    When a hot liquid comes into contact with a colder volatile liquid, one can obtain in some conditions an explosive vaporization, told vapour explosion, whose consequences can be important on neighbouring structures. This explosion needs the intimate mixing and the fine fragmentation between the two liquids. In a stratified vapour explosion, these two liquids are initially superposed and separated by a vapor film. A triggering of the explosion can induce a propagation of this along the film. A study of experimental results and existent models has allowed to retain the following main points: - the explosion propagation is due to a pressure wave propagating through the medium; - the mixing is due to the development of Kelvin-Helmholtz instabilities induced by the shear velocity between the two liquids behind the pressure wave. The presence of the vapour in the volatile liquid explains experimental propagation velocity and the velocity difference between the two fluids at the pressure wave crossing. A first model has been proposed by Brayer in 1994 in order to describe the fragmentation and the mixing of the two fluids. Results of the author do not show explosion propagation. We have therefore built a new mixing-fragmentation model based on the atomization phenomenon that develops itself during the pressure wave crossing. We have also taken into account the transient aspect of the heat transfer between fuel drops and the volatile liquid, and elaborated a model of transient heat transfer. These two models have been introduced in a multi-components, thermal, hydraulic code, MC3D. Results of calculation show a qualitative and quantitative agreement with experimental results and confirm basic options of the model. (author)

  4. Need for Vapour-Liquid Equilibrium Data Generation of Systems Involving Green Solvents

    OpenAIRE

    V. M. Parsana; S. P. Parikh

    2015-01-01

    Much has been said and written over the years regarding green chemistry concept and use of green solvents. The green solvents can potentially replace the traditional or classical solvents in order to reduce the environment footprint or their harmful impact on human being and/or environment. Vapour-liquid equilibrium data is indispensable for the design of distillation columns for separation processes which account for a large percentage of total costs in a typical chemical plant. ...

  5. Mathematical Balance of Ethanol Vapour Permeation Flux in Ionic Liquid Membrane

    Czech Academy of Sciences Publication Activity Database

    Sedláková, Zuzana; Morávková, Lenka; Vejražka, Jiří; Izák, Pavel

    Praha : Česká společnost průmyslové chemie, 2015, s. 28 /p50./. ISBN 978-80-86238-73-9. [mezinárodní chemicko-technologická konference (ICCT 2015) /3./. Mikulov (CZ), 13.04.2015-15.04.2015] R&D Projects: GA MŠk(CZ) LD14094 Institutional support: RVO:67985858 Keywords : ionoc liquid membrane * ethanol vapour lux * mathematical balance Subject RIV: CI - Industrial Chemistry, Chemical Engineering

  6. Responses in tropospheric chemistry to changes in UV fluxes, temperatures and water vapour densities

    OpenAIRE

    Fuglestvedt, Jan S.; Jonson, J.E.; WANG, WEI-CHYUNG; Isaksen, Ivar S.A.

    1994-01-01

    A two-dimensional chemistry/transport model of the global troposphere is used to study the chemical response to i) increased UV-radiation from stratospheric ozone depletion and ii) increased temperatures and water vapour densities that follow from in-creased levels of greenhouse gases. Increased UV radiation increases the photolysis rates for several tropospheric gases, in particular ozone. This leads to enhanced levels of odd hydrogen and reduced concentrations of tropospheric ozone. Increas...

  7. The Water Vapour Radiometer at Effelsberg

    Science.gov (United States)

    Roy, A. L.; Teuber, U.; Keller, R.

    We have installed a scanning 18 GHz to 26 GHz water vapour radiometer on the focus cabin of the Effelsberg 100 m telescope for tropospheric phase, delay and opacity correction during high-frequency VLBI observations. It is based on the design by Tahmoush & Rogers (2000) but with noise injection for calibration, weather-proof housing, and temperature stabilization. The radiometer is delivering data into an archive since July 2003, from which they are available for download. The data will be delivered automatically to PIs of EVN experiments in a calibration table attached by the EVN calibration pipeline. This paper describes the radiometer and its performance.

  8. Water vapour measurements during POLINAT 1

    Energy Technology Data Exchange (ETDEWEB)

    Ovarlez, J.; Ovarlez, H. [Centre National de la Recherche Scientifique, 91 - Palaiseau (France). Lab. de Meteorologie Dynamique

    1997-12-31

    The POLINAT (POLlution from aircraft emissions In the North ATlantic flight corridor)1 experiment has been performed within the framework of the Environment Programme of the Commission of the European Community. It was devoted to the study of the pollution from aircraft in the North Atlantic flight corridor, in order to investigate the impact of pollutants emitted by aircraft on the concentrations of ozone and other trace gases in the upper troposphere and lower stratosphere. For that experiment the water vapour content was measured with a frost-point hygrometer on board of the DLR Falcon research aircraft. This instrument is described, and some selected results are given. (author) 19 refs.

  9. Technical committee meeting on aerosol formation, vapour deposits and sodium vapour trapping. Summary report

    International Nuclear Information System (INIS)

    The papers presented at the LMFBR meeting on aerosol formation covered the following four main topics: theoretical studies on aerosol behaviour and comparison with experimental results; techniques for measurement of aerosols; techniques for trapping sodium vapour and aerosols in gas circuits; design of components having to cope with aerosol deposits. The resulting summaries, conclusions and recommendations which were were agreed upon are presented

  10. The Chemical Vapour Deposition of Tantalum - in long narrow channels

    OpenAIRE

    Mugabi, James Atwoki; Bjerrum, Niels J.; Petrushina, Irina; Christensen, Erik; Eriksen, Søren

    2014-01-01

    Tantals korrosionsbestandighed i varme sure miljøer samt dets overlegne metalliske egenskaber har gjort det til en førsteklasses løsning som konstruktionsmateriale eller som beskyttende belægning til udstyr beregnet til brug under barske kemiske og fysiske forhold. Den høje pris på tantalmetal begrænser imidlertid dets anvendelse som et grundmateriale til procesudstyr. Et billigere alternativ er at fremstille udstyret af stål for derefter at beskytte det med et tyndt, men effektivt lag af tan...

  11. The Chemical Vapour Deposition of Tantalum - in long narrow channels

    DEFF Research Database (Denmark)

    Mugabi, James Atwoki

    protective layers of tantalum because of the process’ ability to coat complex geometries and its relative ease to control. This work focuses on studying the CVD of tantalum in long narrow channels with the view that the knowledge gained during the project can be used to optimise the commercial coating...... that there is a major change in morphology between 850 – 900 °C. The effects of system pressure and precursor partial pressure are also studied, and were found to have relevance to the tantalum distribution along the substrates but little effect on the structural morphology of the deposited layer. In...

  12. Chemical vapour deposition (CVD) diamond as thermoluminescence (Tl) dosimeter

    Energy Technology Data Exchange (ETDEWEB)

    Furetta, C. [Physics Department, University of Rome La Sapienza, Piazzale A. Moro 2, 00185 Rome (Italy)

    1999-07-01

    The aim of this paper is to present a review of the most recent experimental data concerning the CVD diamond as a thermoluminescence detector. Batches of different production have been investigated and the most important dosimetric properties are here reported. The kinetics parameters, such as activation energy, E, frequency factor, s, and kinetic order, b, have been also studied and a phenomenological model of the Tl emission is proposed for the supra linearity behavior of some diamond samples. (Author)

  13. Chemical vapour deposition of vanadium oxide thermochromic thin films

    OpenAIRE

    Piccirillo, Clara

    2012-01-01

    Thermochromic materials change optical properties, such as transmittance or reflectance, with a variation in temperature. An ideal intelligent (smart) material will allow solar radiation in through a window in cold conditions, but reflect that radiation in warmer conditions. The variation in the properties is often associated with a phase change, which takes place at a definite temperature, and is normally reversible. Such materials are usually applied to window glass as thi...

  14. Chemical vapour deposition (CVD) diamond as thermoluminescence (Tl) dosimeter

    International Nuclear Information System (INIS)

    The aim of this paper is to present a review of the most recent experimental data concerning the CVD diamond as a thermoluminescence detector. Batches of different production have been investigated and the most important dosimetric properties are here reported. The kinetics parameters, such as activation energy, E, frequency factor, s, and kinetic order, b, have been also studied and a phenomenological model of the Tl emission is proposed for the supra linearity behavior of some diamond samples. (Author)

  15. Point and extended defects in chemical vapour deposited diamond

    International Nuclear Information System (INIS)

    Homoepitaxially grown single crystal CVD diamond has a dislocation arrangement not seen in natural IIa diamond. Whereas in the latter, dislocations lie on (111) planes along [11-bar 0] directions, dislocations in CVD diamond lie nearly along the [001] growth axis and are arranged in bundles with almost four fold rotational symmetry. Their large strain is easily seen in birefringence and we model the arrangements in the bundle to account for the singular behaviour of the birefringence when the polarisers are rotated with respect to the crystal. The optical absorption spectrum of brown CVD diamond displays a continuum similar to that found in brown IIa natural diamonds but in addition broad point defect induced bands. We investigate the suggestion that the 2.38 eV (560 nm) peak is related to VNH. We suggest that the breadth of these bands is related to the large structural change when the defect is excited.

  16. Chemical vapour deposition: Transition metal carbides go 2D

    Science.gov (United States)

    Gogotsi, Yury

    2015-11-01

    The unique properties of 2D materials, such as graphene or transition metal dichalcogenides, have been attracting much attention in the past decade. Now, metallically conductive and even superconducting transition metal carbides are entering the game.

  17. Aluminium nitride coatings preparation using a chemical vapour deposition process

    Energy Technology Data Exchange (ETDEWEB)

    Armas, B.; Combescure, C.; Icaza Herrera, M. de; Sibieude, F. [Centre National de la Recherche Scientifique (CNRS), 66 - Font-Romeu (France). Inst. de Science et du Genie des Materiaux et des Procedes

    2000-07-01

    Aluminium nitride was obtained in a cold wall reactor using AlCl{sub 3} and NH{sub 3} as precursors and N{sub 2} as a carrier gas. AlCl{sub 3} was synthesized << in situ >> by means of an original method based on the reaction of SiCl{sub 4(g)} with Al{sub (S)}. The substrate used was a cylinder of graphite coated with SiC and heated by high frequency induction. The deposition rate was studied as a function of temperature in the range 900 - 1500 C, the total pressure varying from 2 to 180 hPa. At low temperatures an Arrhenius type representation of the kinetics for several pressures indicated a thermally activated process with an apparent activation energy of about 80 kJ.mol{sup -1}. At high deposition temperatures, the deposition rate was almost constant, indicating that the growth was controlled by a diffusion process. The influence of gas composition and total AlCl{sub 3} flow rate was also discussed. The different layers were characterised particularly by means of X-ray diffraction and SEM. The influence of temperature and total pressure on crystallization and morphology was studied. (orig.)

  18. Kinetics of Laser-Assisted Carbon Nanotube Growth

    CERN Document Server

    van de Burgt, Yoeri; Mandamparambil, Rajesh

    2014-01-01

    Laser-assisted chemical vapour deposition (CVD) growth is an attractive mask-less process for growing locally aligned carbon nanotubes (CNTs) in selected places on temperature sensitive substrates. The nature of the localized process results in fast carbon nanotube growth with high experimental throughput. Here, we report on detailed investigation of growth kinetics related to physical and chemical process characteristics. Specifically, the growth kinetics is investigated by monitoring the dynamical changes of reflected laser beam intensity during growth. Benefiting from the fast growth and high experimental throughput, we investigate a wide range of experimental conditions and propose several growth regimes. Rate-limiting steps are determined using rate equations linked to the proposed growth regimes, which are further characterized by Raman spectroscopy and Scanning Electron Microscopy (SEM), therefore directly linking growth regimes to the structural quality of the CNTs. Activation energies for the differe...

  19. Generation and spectroscopic investigation of an atmospheric pressure water vapour plasma jet

    International Nuclear Information System (INIS)

    Water vapour plasma technologies could be used for the conversion of biomass to hydrogen rich synthetic gas and for the neutralization and utilization of hazardous wastes. Formation of water vapour plasma has been investigated using a linear direct current plasma torch with stair stepped anode. A new device with a unique structure, operating at atmospheric pressure has been designed and tested at Lithuanian Energy Institute, Plasma Processing Laboratory for the innovative and environmental friendly plasma treatment of organic materials. The main operating conditions of plasma torch and main parameters of water vapour plasma jet were investigated. The power of plasma torch was 25–45kW; arc current was 140–180 A, the arc voltage was 172–231 V, the efficiency was 0.5–0.78. The average temperature of water vapour plasma jet in exhaust nozzle was 2600–3500 K, and the plasma jet velocity was 200–310 m/s. Emission lines, registered by the optical emission spectrometer AOS4-1, are analysed to observe the chemical composition of water vapour plasma jet. The optical emission spectrum measurement shows that the water molecule in the plasma is decomposed into H, OH and O radicals. Hydrogen is very desirable in the formation of high caloric synthetic gas (CO+H2) during thermal plasma gasification of organic materials. The summarized results can help to calculate and design gasification systems of biomass, to establish optimal parameters for stable operation of plasma generator and regulate the process parameters. (author)

  20. Properties of meso-Erythritol; phase state, accommodation coefficient and saturation vapour pressure

    Science.gov (United States)

    Emanuelsson, Eva; Tschiskale, Morten; Bilde, Merete

    2016-04-01

    Introduction Saturation vapour pressure and the associated temperature dependence (enthalpy ΔH), are key parameters for improving predictive atmospheric models. Generally, the atmospheric aerosol community lack experimentally determined values of these properties for relevant organic aerosol compounds (Bilde et al., 2015). In this work we have studied the organic aerosol component meso-Erythritol. Methods Sub-micron airborne particles of meso-Erythritol were generated by nebulization from aqueous solution, dried, and a mono disperse fraction of the aerosol was selected using a differential mobility analyser. The particles were then allowed to evaporate in the ARAGORN (AaRhus Atmospheric Gas phase OR Nano particle) flow tube. It is a temperature controlled 3.5 m long stainless steel tube with an internal diameter of 0.026 m (Bilde et al., 2003, Zardini et al., 2010). Changes in particle size as function of evaporation time were determined using a scanning mobility particle sizer system. Physical properties like air flow, temperature, humidity and pressure were controlled and monitored on several places in the setup. The saturation vapour pressures were then inferred from the experimental results in the MATLAB® program AU_VaPCaP (Aarhus University_Vapour Pressure Calculation Program). Results Following evaporation, meso-Erythriol under some conditions showed a bimodal particle size distribution indicating the formation of particles of two different phase states. The issue of physical phase state, along with critical assumptions e.g. the accommodation coefficient in the calculations of saturation vapour pressures of atmospheric relevant compounds, will be discussed. Saturation vapour pressures from the organic compound meso-Erythritol will be presented at temperatures between 278 and 308 K, and results will be discussed in the context of atmospheric chemistry. References Bilde, M. et al., (2015), Chemical Reviews, 115 (10), 4115-4156. Bilde, M. et. al., (2003

  1. Is there a solar signal in lower stratospheric water vapour?

    Science.gov (United States)

    Schieferdecker, Tobias; Lossow, Stefan; Stiller, Gabriele; von Clarmann, Thomas

    2016-04-01

    A merged time series of stratospheric water vapour built from the Halogen Occultation Instrument (HALOE) and the Michelson Interferometer for Passive Atmospheric Sounding (MIPAS) data between 60 deg S and 60 deg N and 15 to 30 km, and covering the years 1992 to 2012, was analysed by multivariate linear regression, including an 11-year solar cycle proxy. Lower stratospheric water vapour was found to reveal a phase-shifted anti-correlation with the solar cycle, with lowest water vapour after solar maximum. The phase shift is composed of an inherent constant time lag of about 2 years and a second component following the stratospheric age of air. The amplitudes of the water vapour response are largest close to the tropical tropopause (up to 0.35 ppmv) and decrease with altitude and latitude. Including the solar cycle proxy in the regression results in linear trends of water vapour being negative over the full altitude/latitude range, while without the solar proxy, positive water vapour trends in the lower stratosphere were found. We conclude from these results that a solar signal seems to be generated at the tropical tropopause which is most likely imprinted on the stratospheric water vapour abundances and transported to higher altitudes and latitudes via the Brewer-Dobson circulation. Hence it is concluded that the tropical tropopause temperature at the final dehydration point of air may also be governed to some degree by the solar cycle. The negative water vapour trends obtained when considering the solar cycle impact on water vapour abundances can possibly solve the "water vapour conundrum" of increasing stratospheric water vapour abundances despite constant or even decreasing tropopause temperatures.

  2. Is there a solar signal in lower stratospheric water vapour?

    Science.gov (United States)

    Schieferdecker, T.; Lossow, S.; Stiller, G. P.; von Clarmann, T.

    2015-09-01

    A merged time series of stratospheric water vapour built from the Halogen Occultation Instrument (HALOE) and the Michelson Interferometer for Passive Atmospheric Sounding (MIPAS) data between 60° S and 60° N and 15 to 30 km and covering the years 1992 to 2012 was analysed by multivariate linear regression, including an 11-year solar cycle proxy. Lower stratospheric water vapour was found to reveal a phase-shifted anti-correlation with the solar cycle, with lowest water vapour after solar maximum. The phase shift is composed of an inherent constant time lag of about 2 years and a second component following the stratospheric age of air. The amplitudes of the water vapour response are largest close to the tropical tropopause (up to 0.35 ppmv) and decrease with altitude and latitude. Including the solar cycle proxy in the regression results in linear trends of water vapour being negative over the full altitude/latitude range, while without the solar proxy, positive water vapour trends in the lower stratosphere were found. We conclude from these results that a solar signal seems to be generated at the tropical tropopause which is most likely imprinted on the stratospheric water vapour abundances and transported to higher altitudes and latitudes via the Brewer-Dobson circulation. Hence it is concluded that the tropical tropopause temperature at the final dehydration point of air may also be governed to some degree by the solar cycle. The negative water vapour trends obtained when considering the solar cycle impact on water vapour abundances can possibly solve the "water vapour conundrum" of increasing stratospheric water vapour abundances despite constant or even decreasing tropopause temperatures.

  3. The role of hydrogen in oxygen-assisted chemical vapor deposition growth of millimeter-sized graphene single crystals

    Science.gov (United States)

    Zhao, Pei; Cheng, Yu; Zhao, Dongchen; Yin, Kun; Zhang, Xuewei; Song, Meng; Yin, Shaoqian; Song, Yenan; Wang, Peng; Wang, Miao; Xia, Yang; Wang, Hongtao

    2016-03-01

    Involving oxygen in the traditional chemical vapor deposition (CVD) process has proven a promising approach to achieve large-scale graphene single crystals (GSCs), but its many relevant fundamental aspects are still not fully understood. Here we report a systematic study on the role of hydrogen in the growth of millimeter-sized GSCs using enclosure-like Cu structures via the oxygen-assisted CVD process. Results show that GSCs have different first layer growth behaviors on the inside and outside surfaces of a Cu enclosure when the H2 environment is varied, and these behaviors will consequently and strongly influence the adlayer formation in these GSCs, leading to two entirely different growth modes. Low H2 partial pressure (PH2) tends to result in fast growth of dendritically shaped GSCs with multiple small adlayers, but high PH2 can modify the GSC shape into hexagons with single large adlayer nuclei. This difference of adlayers is attributed to the different C diffusion paths determined by the shapes of their host GSCs. On the basis of these observations, we developed an isothermal two-step method to obtain GSCs with significantly improved growth rate and sample quality, in which low PH2 is first set to accelerate the growth rate followed by high PH2 to restrict the adlayer nuclei. Our results prove that the growth of GSCs can reach a reasonable optimization between their growth rates and sample quality by simply adjusting the CVD H2 environment, which we believe will lead to more improvements in graphene synthesis and fundamental insight into the related growth mechanisms.Involving oxygen in the traditional chemical vapor deposition (CVD) process has proven a promising approach to achieve large-scale graphene single crystals (GSCs), but its many relevant fundamental aspects are still not fully understood. Here we report a systematic study on the role of hydrogen in the growth of millimeter-sized GSCs using enclosure-like Cu structures via the oxygen-assisted CVD

  4. Dioxo-Fluoroalkoxide Tungsten(VI) Complexes for Growth of WOx Thin Films by Aerosol-Assisted Chemical Vapor Deposition.

    Science.gov (United States)

    Bonsu, Richard O; Kim, Hankook; O'Donohue, Christopher; Korotkov, Roman Y; Abboud, Khalil A; Anderson, Timothy J; McElwee-White, Lisa

    2015-08-01

    The soluble bis(fluoroalkoxide) dioxo tungsten(VI) complexes WO2(OR)2(DME) [1, R = C(CF3)2CH3; 2, R = C(CF3)3] have been synthesized by alkoxide-chloride metathesis and evaluated as precursors for aerosol-assisted chemical vapor deposition (AACVD) of WOx. The (1)H NMR and (19)F NMR spectra of 1 and 2 are consistent with an equilibrium between the dimethoxyethane (DME) complexes 1 and 2 and the solvato complexes WO2(OR)2(CD3CN)2 [1b, R = C(CF3)2CH3; 2b, R = C(CF3)3] in acetonitrile-d3 solution. Studies of the fragmentation of 1 and 2 by mass spectrometry and thermolysis resulted in observation of DME and the corresponding alcohols, with hexafluoroisobutylene also generated from 1. DFT calculations on possible decomposition mechanisms for 1 located pathways for hydrogen abstraction by a terminal oxo to form hexafluoroisobutylene, followed by dimerization of the resulting terminal hydroxide complex and dissociation of the alcohol. AACVD using 1 occurred between 100 and 550 °C and produced both substoichiometric amorphous WOx and a polycrystalline W18O49 monoclinic phase, which exhibits 1-D preferred growth in the [010] direction. The work function (4.9-5.6 eV), mean optical transmittance (39.1-91.1%), conductivity (0.4-2.3 S/cm), and surface roughness (3.4-7.9 nm) of the WOx films are suitable for charge injection layers in organic electronics. PMID:26172992

  5. Beam-profile monitor using a sodium-vapour

    CERN Multimedia

    1972-01-01

    Beam-profile monitor using a sodium-vapour curtain at 45 degrees to the ISR beam in Ring I (sodium generator is in white cylinder just left of centre). Electrons produced by ionization of the sodium vapour give an image of the beam on a fluorescent screen that is observed by a TV camera (at upper right).

  6. Modeling of vapour generator for clean-up separator module

    International Nuclear Information System (INIS)

    233U clean-up process plays an important role in the thorium fuel cycle. This process is based on laser isotope separation (LIS) using atomic vapour, where the impure 233U (containing 232U) is evaporated in high vacuum environment. The vapour is interacted with laser beam to selectively ionize 232U, which is removed by electrostatic means

  7. Characterization and modeling of 2D-glass micro-machining by spark-assisted chemical engraving (SACE) with constant velocity

    International Nuclear Information System (INIS)

    Spark-assisted chemical engraving (SACE) is an unconventional micro-machining technology based on electrochemical discharge used for micro-machining nonconductive materials. SACE 2D micro-machining with constant speed was used to machine micro-channels in glass. Parameters affecting the quality and geometry of the micro-channels machined by SACE technology with constant velocity were presented and the effect of each of the parameters was assessed. The effect of chemical etching on the geometry of micro-channels under different machining conditions has been studied, and a model is proposed for characterization of the micro-channels as a function of machining voltage and applied speed

  8. Formation of silicon nanowire packed films from metallurgical-grade silicon powder using a two-step metal-assisted chemical etching method

    OpenAIRE

    Ouertani, Rachid; Hamdi, Abderrahmen; Amri, Chohdi; Khalifa, Marouan; Ezzaouia, Hatem

    2014-01-01

    In this work, we use a two-step metal-assisted chemical etching method to produce films of silicon nanowires shaped in micrograins from metallurgical-grade polycrystalline silicon powder. The first step is an electroless plating process where the powder was dipped for few minutes in an aqueous solution of silver nitrite and hydrofluoric acid to permit Ag plating of the Si micrograins. During the second step, corresponding to silicon dissolution, we add a small quantity of hydrogen peroxide to...

  9. Chemical aspects of fission product transport in the primary circuit of a light water reactor

    International Nuclear Information System (INIS)

    The transport and fission products in the primary circuit of a light water reactor are of fundamental importance in assessing the consequences of severe accidents. Recent experimental studies have concentrated upon the behaviour of simulant fission product species such as caesium iodide, caesium hydroxide and tellurium, in terms of their vapour deposition characteristics onto metals representative of primary circuit materials. An induction furnace has been used to generate high-density/structural materials aerosols for subsequent analysis, and similar equipment has been incorporated into a glove-box to study lightly-irradiated UO/sub 2/ clad in Zircaloy. Analytical techniques are being developed to assist in the identification of fission product chemical species released from the fuel at temperatures from 1000 to 25000C. Matrix isolation-infrared spectroscopy has been used to identify species in the vapour phase, and specific data using this technique are reported

  10. Air and Soil Water Vapour Density Variations in Akungba Akoko

    Directory of Open Access Journals (Sweden)

    Afolabi O.M

    2015-10-01

    Full Text Available – A temperature and humidity measuring equipment constructed with Silicon lab Si7015 integrated circuit sensor was used to monitor temperature and humidity, compute water saturation and vapour densities for air and soil and to interpret three days variations in Akungba Akoko. The sensors were inserted 5 cm into the soil and 2m away in the troposphere. Two hour records of both parameters were taken from 9 am to 5 pm for 3 days. Air and soil water saturation and vapour density data were computed from the 2 measured parameters by using the ITU-2003 formula. Interpretations of resulting curves showed that increase in vapour density in soil is more than that of air during rainfall and this increase with temperature. The average soil water saturation data and vapour density are also higher in soil. It is suggested that the soil water vapour density and water saturation interpretation should be done for areas with landslides and pollution tendencies

  11. Effect of Water Vapour to Temperature Inside Sonoluminescing Bubble

    Institute of Scientific and Technical Information of China (English)

    安宇; 谢崇国; 应崇福

    2003-01-01

    Using the model based on the homo-pressure approximation, we explain why the maximum temperature is sensitive to the ambient temperature in the single bubble sonoluminescence. The numerical simulation shows that the maximum temperature inside a sonoluminescing bubble depends on how much water vapour evaporates or coagulates at the bubble wall during the bubble shrinking to its minimum size. While the amount of water vapour inside the bubble at the initial and the final state of the compression depends on the saturated water vapour pressure which is sensitive to the ambient temperature. The lower the saturated vapour pressure is, the higher the maximum temperature is. This may lead to more general conclusion that those liquids with lower saturated vapour pressure are more favourable for the single bubble sonoluminescence. We also compare those bubbles with different noble gases, the result shows that the maximum temperatures in the different gas bubbles are almost the same for those with the same ambient temperature.

  12. Stabilization of Leidenfrost vapour layer by textured superhydrophobic surfaces

    KAUST Repository

    Vakarelski, Ivan Uriev

    2012-09-12

    In 1756, Leidenfrost observed that water drops skittered on a sufficiently hot skillet, owing to levitation by an evaporative vapour film. Such films are stable only when the hot surface is above a critical temperature, and are a central phenomenon in boiling. In this so-called Leidenfrost regime, the low thermal conductivity of the vapour layer inhibits heat transfer between the hot surface and the liquid. When the temperature of the cooling surface drops below the critical temperature, the vapour film collapses and the system enters a nucleate-boiling regime, which can result in vapour explosions that are particularly detrimental in certain contexts, such as in nuclear power plants. The presence of these vapour films can also reduce liquid-solid drag. Here we show how vapour film collapse can be completely suppressed at textured superhydrophobic surfaces. At a smooth hydrophobic surface, the vapour film still collapses on cooling, albeit at a reduced critical temperature, and the system switches explosively to nucleate boiling. In contrast, at textured, superhydrophobic surfaces, the vapour layer gradually relaxes until the surface is completely cooled, without exhibiting a nucleate-boiling phase. This result demonstrates that topological texture on superhydrophobic materials is critical in stabilizing the vapour layer and thus in controlling-by heat transfer-the liquid-gas phase transition at hot surfaces. This concept can potentially be applied to control other phase transitions, such as ice or frost formation, and to the design of low-drag surfaces at which the vapour phase is stabilized in the grooves of textures without heating. © 2012 Macmillan Publishers Limited. All rights reserved.

  13. Binary supported nickel catalysts for the deuterium exchange reaction between hydrogen and water vapour

    International Nuclear Information System (INIS)

    Nickel catalysts supported by Fe2O3, CuO, MnO and CeO were prepared from the corresponding metal nitrates. Chemical treatment of the catalysts was carried out at room temperature, while thermal treatment was made at 350 0C. The total surface area of the catalysts was measured by nitrogen adsorption at -195 0C using the BET equation. The specific metallic surface area was measured by hydrogen chemisorption at liquid nitrogen temperature. The activity of the catalysts was tested for the isotopic exchange reaction of deuterium between hydrogen and water vapour. The results obtained showed that Ni-Fe2O3, Ni-CuO and Ni-MnO catalysts exhibit catalytic activity for the deuterium exchange between hydrogen and water vapour, while the catalyst supported by CeO has no such activity. (author)

  14. Atomic vapour laser isotope separation of zirconium

    International Nuclear Information System (INIS)

    The possibility of separating the 91Zr isotope from the rest of the isotopes of zirconium were investigated. The current interest in zirconium arise from the fact that zirconium is an important element in the construction of nuclear reactors. The technique proposed for the isotope separation process is different from those currently in use for the separation of isotopes of refractory elements such as uranium. The proposed isotope separation process is based on the multi-step selective excitation of the isotope to be extracted, which in this case is 91Zr. The isotope-selective laser excitation relies on the angular-momentum selection rules for the absorption of circularly polarized light. The theory governing the isotope separation process is discussed and the various parameters in the practical implementation of the theory are investigated. The suitability of a demountable hollow cathode lamp as zirconium atomic vapour source was investigated. The optimum working conditions for the demountable hollow cathode lamp was determined and fluorescence, absorption and emission measurements were made. In order to realize a selective two-step excitation process, relevant energy levels must exist which fulfill certain requirements as discussed in the thesis. Energy levels fulfilling the necessary conditions for isotope separation are not readily available and an intensive study of the zirconium energy levels were made. Non-selective two-step excitation of the zirconium atoms was realized. These fluorescence measurements gave information regarding the optical alignment of the laser beams as well as the construction of the demountable hollow cathode lamp as atomic vapour source for the two-step excitation process. Although selective two-step excitation of the 91Zr isotope could not be achieved, a number of valuable results were obtained during the project. Proposals on how the necessary selective excitation could be achieved, in order to realize the separation of the 91Zr

  15. Electrochromic and colorimetric properties of nickel(II) oxide thin films prepared by aerosol-assisted chemical vapor deposition.

    Science.gov (United States)

    Sialvi, Muhammad Z; Mortimer, Roger J; Wilcox, Geoffrey D; Teridi, Asri Mat; Varley, Thomas S; Wijayantha, K G Upul; Kirk, Caroline A

    2013-06-26

    Aerosol-assisted chemical vapor deposition (AACVD) was used for the first time in the preparation of thin-film electrochromic nickel(II) oxide (NiO). The as-deposited films were cubic NiO, with an octahedral-like grain structure, and an optical band gap that decreased from 3.61 to 3.48 eV on increase in film thickness (in the range 500-1000 nm). On oxidative voltammetric cycling in aqueous KOH (0.1 mol dm(-3)) electrolyte, the morphology gradually changed to an open porous NiO structure. The electrochromic properties of the films were investigated as a function of film thickness, following 50, 100, and 500 conditioning oxidative voltammetric cycles in aqueous KOH (0.1 mol dm(-3)). Light modulation of the films increased with the number of conditioning cycles. The maximum coloration efficiency (CE) for the NiO (transmissive light green, the "bleached" state) to NiOOH (deep brown, the colored state) electrochromic process was found to be 56.3 cm(2) C(-1) (at 450 nm) for films prepared by AACVD for 15 min followed by 100 "bleached"-to-colored conditioning oxidative voltammetric cycles. Electrochromic response times were bleaching process. The films showed good stability when tested for up to 10 000 color/bleach cycles. Using the CIE (Commission Internationale de l'Eclairage) system of colorimetry the color stimuli of the electrochromic NiO films and the changes that take place on reversibly oxidatively switching to the NiOOH form were calculated from in situ visible spectra recorded under electrochemical control. Reversible changes in the hue and saturation occur on oxidation of the NiO (transmissive light green) form to the NiOOH (deep brown) form, as shown by the track of the CIE 1931 xy chromaticity coordinates. As the NiO film is oxidized, a sharp decrease in luminance was observed. CIELAB L*a*b* coordinates were also used to quantify the electrochromic color states. A combination of a low L* and positive a* and b* values quantified the perceived deep brown

  16. Analysis of copper (I) oxide thin films grown in a photo-assisted chemical vapor deposition reactor for photovoltaic applications

    Science.gov (United States)

    Mohiuddin, Omar H.

    Copper (I) oxide (Cu2O) has enormous potenetial for photovoltaic applications. Cu2O is a p-type semiconductor with a direct band gap of 2.2 eV. When grown on silicon, thin film Cu2O has the potential to increase photovoltaic eciency. Cu2O is a suitable photovoltaic material because it is inexpensive, non-toxic and abundant in the earth's crust. A model was developed based on a stagnation flow reactor with a reduction in activation energy for the precursor decomposition due to the light irradiation to model the light irradiation. The parameters that were tested were substrate temperature (200 to 700° C), gas temperature (100 and 150 °C) and carrier gas flow rate (25 to 100 sccm). The model was tested with a 480 nm and 172 nm light irradiation source and without any light irradiation source. This thesis utilizes a photo assisted chemical vapor deposition reactor to deposit films of Cu2O on silicon. The films were grown with a surface temperature of 700 °C, a gas temperature of 150 °C and an oxygen gas flow rate of 100 sccm. One deposition was done without the use of any light irradiation and another deposition was done with a 480 nm light irradiation source. X-ray diffraction, ellipsometry and transmission electron microscopy (TEM) were used to investigate the light irradiation eect on the lm growth and morphology. When grown with light irradiation, the ellipsometer showed that the film thickness increased to 98 +/- 6 nm from 74 +/- 10 nm, which shows that there is greater uniformity with a higher thickness when grown with light irradiation. The XRD results showed an increase in crystallinity in Cu2O grown with light irradiation, and the TEM results showed the grain sizes double when grown with light irradiation. The UV irradiation has been shown to increase the copper (I) oxide film quality and lm thickness. The model showed that the effect of the light irradiation was maximized at a surface temperature of 400 °C After this temperature the thermal eects become

  17. Growth and characterization of large, high quality single crystal diamond substrates via microwave plasma assisted chemical vapor deposition

    Science.gov (United States)

    Nad, Shreya

    Single crystal diamond (SCD) substrates can be utilized in a wide range of applications. Important issues in the chemical vapor deposition (CVD) of such substrates include: shrinking of the SCD substrate area, stress and cracking, high defect density and hence low electronic quality and low optical quality due to high nitrogen impurities. The primary objective of this thesis is to begin to address these issues and to find possible solutions for enhancing the substrate dimensions and simultaneously improving the quality of the grown substrates. The deposition of SCD substrates is carried out in a microwave cavity plasma reactor via the microwave plasma assisted chemical vapor deposition technique. The operation of the reactor was first optimized to determine the safe and efficient operating regime. By adjusting the matching of the reactor cavity with the help of four internal tuning length variables, the system was further matched to operate at a maximum overall microwave coupling efficiency of ˜ 98%. Even with adjustments in the substrate holder position, the reactor remains well matched with a coupling efficiency of ˜ 95% indicating good experimental performance over a wide range of operating conditions. SCD substrates were synthesized at a high pressure of 240 Torr and with a high absorbed power density of 500 W/cm3. To counter the issue of shrinking substrate size during growth, the effect of different substrate holder designs was studied. An increase in the substrate dimensions (1.23 -- 2.5 times) after growth was achieved when the sides of the seeds were shielded from the intense microwave electromagnetic fields in a pocket holder design. Using such pocket holders, high growth rates of 16 -- 32 mum/hr were obtained for growth times of 8 -- 72 hours. The polycrystalline diamond rim deposition was minimized/eliminated from these growth runs, hence successfully enlarging the substrate size. Several synthesized CVD SCD substrates were laser cut and separated

  18. CHEMICALS

    CERN Multimedia

    Medical Service

    2002-01-01

    It is reminded that all persons who use chemicals must inform CERN's Chemistry Service (TIS-GS-GC) and the CERN Medical Service (TIS-ME). Information concerning their toxicity or other hazards as well as the necessary individual and collective protection measures will be provided by these two services. Users must be in possession of a material safety data sheet (MSDS) for each chemical used. These can be obtained by one of several means : the manufacturer of the chemical (legally obliged to supply an MSDS for each chemical delivered) ; CERN's Chemistry Service of the General Safety Group of TIS ; for chemicals and gases available in the CERN Stores the MSDS has been made available via EDH either in pdf format or else via a link to the supplier's web site. Training courses in chemical safety are available for registration via HR-TD. CERN Medical Service : TIS-ME :73186 or service.medical@cern.ch Chemistry Service : TIS-GS-GC : 78546

  19. Sonication-assisted sequential chemical bath deposition of CdS nanoparticles into TiO2 nanotube arrays for application in solar cells

    International Nuclear Information System (INIS)

    Highlights: ► CdS sensitized TNTAs photoanode were prepared by sonication-assisted CBD approach. ► Sonication-assisted CBD (SSCBD) prevents CdS aggregating at the top of TNTAs. ► SSCBD promote the deposition quantity of nanoparticles into the TNTAs effectively. ► Compared with classical CBD, S-CdS/TNTAs cells exhibit an increase of η by 65.8%. - Abstract: CdS nanoparticles sensitized TiO2 nanotube arrays photoanode for semiconductors sensitized solar cells (SSSCs) were prepared by sonication-assisted sequential chemical bath deposition (SSCBD) approach and labeled as S-CdS/TNTAs. The S-CdS/TNTAs solar cell was assembled into a typical sandwich structure with backside illumination. Short-circuit current density (Jsc), open circuit potential (Voc), fill factor (FF) and power conversion efficiency (PCE) of the cells under AM 1.5 irradiation were about 4.16 mA cm−2, 446 mV, 43.9% and 0.814%, respectively. Compared with classical sequential chemical bath deposition (SCBD), SSCBD process could effectively prevent CdS nanoparticles aggregating at the top surface of TNTAs and resulted in an increase of PCE by 65.8%. Increased performance of S-CdS/TNTAs solar cell may be attributed to the more efficient charge-transfer process and the lower charge recombination, as evidenced from FESEM and electrochemical impedance spectroscopy (EIS).

  20. [CO2-gas exchange of mosses following water vapour uptake].

    Science.gov (United States)

    Lange, O L

    1969-03-01

    The CO2-gas exchange of dry mosses which were exposed to air of high water vapour content has been followed. Some moss species behave as do lichens and aerophilic green algae: they are able to take up enough water vapour to make a rather high photosynthetic activity possible. Other species lack this ability. They need liquid water for reactivation of photosynthesis, as do poikilohydric ferns and phanerogams. In this respect too the mosses are located between the real thallophytes and the cormophytes. From this point of view they are useful objects for studying the relationships between water vapour reactivation, morphological organisation and ecological capability. PMID:24504355

  1. Trace vapour detection at room temperature using Raman spectroscopy.

    Science.gov (United States)

    Chou, Alison; Radi, Babak; Jaatinen, Esa; Juodkazis, Saulius; Fredericks, Peter M

    2014-04-21

    A miniaturized flow-through system consisting of a gold coated silicon substrate based on enhanced Raman spectroscopy has been used to study the detection of vapour from model explosive compounds. The measurements show that the detectability of the vapour molecules at room temperature depends sensitively on the interaction between the molecule and the substrate. The results highlight the capability of a flow system combined with Raman spectroscopy for detecting low vapour pressure compounds with a limit of detection of 0.2 ppb as demonstrated by the detection of bis(2-ethylhexyl)phthalate, a common polymer additive emitted from a commercial polyvinyl chloride (PVC) tubing at room temperature. PMID:24588003

  2. Absorption of solar radiation by atmospheric water vapour

    International Nuclear Information System (INIS)

    Solar spectra from 0.7 to 2.5 μm were studied under low resolution for different solar zenith angles. The band integrated absorbance for water vapour bands at 0.8, 0.9, 1.1, 1.4 and 1.9 μm were measured and compared with those obtained by Howard et al. and other workers. It was found that although the agreement was satisfactory at lower water-vapour contents, there was significant deviation at high water-vapour content. (author)

  3. A solar signal in lower stratospheric water vapour?

    OpenAIRE

    T. Schieferdecker; S. Lossow; Stiller, G. P.; von Clarmann, T.

    2015-01-01

    A merged time series of stratospheric water vapour built from HALOE and MIPAS data between 60° S and 60° N and 15 to 30 km and covering the years 1992 to 2012 was analyzed by multivariate linear regression including an 11 year solar cycle proxy. Lower stratospheric water vapour was found to reveal a phase-shifted anti-correlation with the solar cycle, with lowest water vapour after solar maximum. The phase shift is composed of an inherent constant time lag of about 2 years and a second compon...

  4. Precursor design of vapour deposited cubic boron nitride versus diamond

    International Nuclear Information System (INIS)

    The similarities and dissimilarities in the growth of diamond vs. cubic boron nitride (c-BN) were studied using quantum mechanical calculations. Great similarities were observed when considering the surface stabilization by H atoms. Very great similarities were recorded when considering the adsorption of various growth species to these materials. It was found necessary to avoid mixtures of B- and N-containing species in the gas phase during c-BN growth, since they should most probably result in a mixture of these species also on the surfaces. Greater dissimilarities were observed when studying the surface migrations on the diamond and c-BN surfaces and nucleation of the cubic phases on the corresponding hexagonal ones. Nucleation of diamond/c-BN on graphite/h-BN was found to be energetically feasible. This was calculated to be especially the situation for the armchair edge of the basal plane of h-BN and of the zigzag edge of the basal plane of graphite. These theoretical results can be used as guidelines in the strive towards thin film deposition of c-BN using gentle chemical vapour deposition methods like atomic layer deposition. (author)

  5. Performance Improvement of Microcrystalline p-SiC/i-Si/n-Si Thin Film Solar Cells by Using Laser-Assisted Plasma Enhanced Chemical Vapor Deposition

    Directory of Open Access Journals (Sweden)

    Hsin-Ying Lee

    2014-01-01

    Full Text Available The microcrystalline p-SiC/i-Si/n-Si thin film solar cells treated with hydrogen plasma were fabricated at low temperature using a CO2 laser-assisted plasma enhanced chemical vapor deposition (LAPECVD system. According to the micro-Raman results, the i-Si films shifted from 482 cm−1 to 512 cm−1 as the assisting laser power increased from 0 W to 80 W, which indicated a gradual transformation from amorphous to crystalline Si. From X-ray diffraction (XRD results, the microcrystalline i-Si films with (111, (220, and (311 diffraction were obtained. Compared with the Si-based thin film solar cells deposited without laser assistance, the short-circuit current density and the power conversion efficiency of the solar cells with assisting laser power of 80 W were improved from 14.38 mA/cm2 to 18.16 mA/cm2 and from 6.89% to 8.58%, respectively.

  6. Applications of Copper Vapour Lasers in science and industry

    International Nuclear Information System (INIS)

    Scientific applications of tunable lasers pumped by Copper Vapour Lasers include AVLIS, RIMS, atmospheric OH detection and laser guide stars. Industrial applications include high speed photography and micromachining. (author)

  7. Performance Analysis of Vapour Compression Refrigeration System Utilizing Different Refrigerant

    OpenAIRE

    Ashish Patidar 1; Amitesh Paul

    2014-01-01

    The performance of heat transfer is one of the most important research areas in the field of thermal engineering. There are a large number of refrigerants, which are used to transfer heat from low temperature reservoir to high temperature reservoir by using vapour compression refrigeration system. This paper presents a performance analysis of vapour compression refrigeration system with using refrigerants like R-134a & Blend of R-290(propane) (50%) and R-600a (50% Isobutane). ...

  8. Is there a solar signal in lower stratospheric water vapour?

    OpenAIRE

    T. Schieferdecker; S. Lossow; G. P. Stiller; Clarmann, T.

    2015-01-01

    A merged time series of stratospheric water vapour built from the Halogen Occultation Instrument (HALOE) and the Michelson Interferometer for Passive Atmospheric Sounding (MIPAS) data between 60° S and 60° N and 15 to 30 km and covering the years 1992 to 2012 was analysed by multivariate linear regression, including an 11-year solar cycle proxy. Lower stratospheric water vapour was found to reveal a phase-shifted anti-correlation with the solar cycle, with lowest water vapou...

  9. The effect of thermal conductivity of the tool electrode in spark-assisted chemical engraving gravity-feed micro-drilling

    International Nuclear Information System (INIS)

    Spark-assisted chemical engraving (SACE) is a non-traditional micro-machining technology based on electrochemical discharge phenomena. In SACE gravity-feed micro-drilling, various parameters including the thermal properties of the tool electrode play a significant role in the process. Based on a series of experiments using tool electrodes with different thermal properties, the effect in SACE gravity-feed micro-drilling is discussed. It is demonstrated that machining with higher thermal conductivity tool electrodes results in faster machining during the discharge regime and slower machining during the hydrodynamic regime of SACE gravity-feed micro-drilling

  10. Hydrogen plasma enhanced alignment on CNT-STM tips grown by liquid catalyst-assisted microwave plasma-enhanced chemical vapor deposition

    International Nuclear Information System (INIS)

    Carbon nanotubes are grown directly on a scanning tunneling microscopy tip by liquid catalyst-assisted microwave-enhanced chemical vapor deposition, and effects of hydrogen plasma treatment on the tip have been investigated in detail by field-emission scanning electron microscopy (FESEM), transmission electron microscopy (TEM) and Raman spectroscopy. The unaligned CNTs on the as-grown tip apex have been realigned and reshaped by subsequent hydrogen plasma treatment. The diameter of CNTs is enlarged mainly due to amorphous layers being re-sputtered over their outer shells

  11. High-Jc YBa2Cu3O7-δ superconducting film grown by laser-assisted chemical vapor deposition using a single liquid source and its microstructure

    Science.gov (United States)

    Zhao, Pei; Ito, Akihiko; Kato, Takeharu; Yokoe, Daisaku; Hirayama, Tsukasa; Goto, Takashi

    2013-09-01

    A YBa2Cu3O7-δ (YBCO) film was prepared on a multilayer-coated Hastelloy C276 substrate by laser-assisted metalorganic chemical vapor deposition using a single liquid source precursor. A c-axis-oriented YBCO film was grown epitaxially on a (100) CeO2 layer at a deposition rate of 11 μm h-1. A screw dislocation and stacking faults were observed in the cross-section of the YBCO film. The critical current density of the YBCO film reached 2.7 MA cm-2.

  12. Variability of winter-time middle atmospheric water vapour over the Arctic as observed with a ground-based microwave radiometer

    Science.gov (United States)

    Tschanz, Brigitte; Kivi, Rigel; Rüfenacht, Rolf; Kämpfer, Niklaus

    2014-05-01

    Middle atmospheric water vapour has a long chemical lifetime and can therefore be used as a tracer for dynamics. The ground-based microwave radiometer MIAWARA-C is designed for the use on campaigns and measures profiles of water vapour in the upper stratosphere and mesosphere and thus provides valuable data for the investigation of atmospheric processes. It has been operational for five years and has successfully participated in measurement campaigns under various climatic conditions in Germany, Switzerland, California, Finland and on la Réunion. The temporal resolution of the obtained water vapour profiles approximately 2 hours depending on tropospheric conditions. During two campaigns from January to June 2010 and from July 2011 to April 2013 in Sodankylä, Finland, MIAWARA-C monitored time series of polar middle atmospheric water vapour for three winters with three Sudden Stratospheric Warmings (SSW) occurring in early 2010, 2012 and 2013. The obtained time series are used to study the effects of the three SSWs on middle-atmospheric water vapour. During an SSW, humid mid- to low-latitude air is transported towards the polar region resulting in a fast increase in water vapour. The descent of water vapour after the SSW allows the estimation of the descent rate over the polar region as the normal wintertime circulation reforms. Results from the three SSWs are compared. The ground-based water vapour data is combined with sonde data of the Finnish Meteorological Institute and ground-based microwave wind measurements for one winter in order to obtain a more complete picture of the dynamics in the polar winter atmosphere.

  13. Superhydrophobic polymer films via aerosol assisted deposition - Taking a leaf out of nature's book

    International Nuclear Information System (INIS)

    Aerosol assisted deposition of three sets of polymer films based on commercially available resins was achieved on various substrates. The films were characterised using a range of methods, including water contact and slip angle to determine water repellent properties. The aerosol assisted deposition inside the chemical vapour deposition reactor was unique in generating a highly rough superhydrophobic surface with water contact angles up to 170o. During the deposition process, two of the polymers were cured resulting in the development of high surface morphology. It was observed that the polymer that did not cure did not develop such a rough surface resulting in a lower water contact angle (∼ 99o). The superhydrophobic films had a Cassie-Baxter type wetting with water failing to penetrate the surface porosity, water spraying on the surface would bounce off. These films had exceptionally low slide angles of ca 1-2o from the horizontal.

  14. Absorption spectroscopy of laser excited europium vapour

    International Nuclear Information System (INIS)

    Absorption spectra of europium vapour irradiated by intense, monochromatic resonance radiation at the wavelengths of the three principal resonance lines, 4f76s2, 8S(J=7/2)→4f76s6p, y 8P(J=5/2, 7/2 and 9/2) at 466.2, 462.7 and 459.4 nm respectively, have been photographed at high resolution. Pulsed resonance radiation was obtained from a tunable, narrow-band dye laser pumped by a nitrogen laser: a broad-band dye laser pumped by the same nitrogen laser provided background radiation. Our spectra covered the ranges 380-400 nm, and 410-450 nm, each one showing transitions from a single resonance level to upper levels in the region of either the 4f76s, 7S or the 4f76s, 9S ionization limit of EuII. In the shorter wavelength range the spectra consisted of weak autoionized series converging towards the 7S limit. In the longer wavelength range the three spectra were surprisingly dissimilar. The majority of the upper levels could be arranged into five highly-perturbed series, one corresponding to each of the J values 3/2, 5/2, 7/2, 9/2 and 11/2. These series arose from excitation of the 6p electron to high lying d-orbitals. The absorption transitions to the series members are only prominent in regions where the series are strongly perturbed, indicating that most of the line strength is derived from the perturbing levels. Possible origins for the perturbing levels are discussed. Little evidence was found for a series arising from excitation of the 6p electron to high lying s-orbitals. (author)

  15. Ultraviolet-induced surface modification of polyurethane films in the presence of oxygen or acrylic acid vapours

    Energy Technology Data Exchange (ETDEWEB)

    Weibel, Daniel Eduardo, E-mail: danielw@iq.ufrgs.b [Departamento de Fisico-Quimica, Instituto de Quimica, Universidade Federal do Rio Grande do Sul, Porto Alegre, RS (Brazil); Fassini Michels, Alexandre [Centro de Ciencias Exatas e Tecnologia, Universidade de Caxias do Sul, Caxias do Sul, RS (Brazil); Horowitz, Flavio [Laser and Film Optics Laboratory, Instituto de Fisica, Universidade Federal do Rio Grande do Sul, Porto Alegre, RS (Brazil); Silva Cavalheiro, Ricardo da [Departamento de Fisico-Quimica, Instituto de Quimica, Universidade Federal do Rio Grande do Sul, Porto Alegre, RS (Brazil); Vingre da Silva Mota, Gunar [Curso de Fisica, Universidade Federal do Amapa, Macapa, AP (Brazil)

    2009-07-31

    An efficient surface functionalization of polyurethane (PU) films has been obtained by ultraviolet (UV)-assisted modification in the presence of oxygen or acrylic acid (AA) vapours. Film analyses were carried out by water contact angle measurements, X-ray photoelectron spectroscopy (XPS) and Near-edge X-ray absorption fine structure (NEXAFS). Film hydrophilicity increased with photolysis time in the presence of oxygen or AA vapours. Incorporation of COO and C=O functional groups at the polymer surface after the UV-assisted treatments was observed. In addition, High resolution XPS and NEXAFS results showed that a thin film of poly (acrylic acid) (PAA) is formed over the PU films during the UV irradiation with AA vapours. The obtained results are compared with previous published oxygen and AA low-power plasma treatments. Similarity between both treatment methodologies is shown. UV surface functionalization and polymerization of PAA can be used instead of a traditional plasma treatment with the advantage of set-up simplicity and lower costs.

  16. Ultraviolet-induced surface modification of polyurethane films in the presence of oxygen or acrylic acid vapours

    International Nuclear Information System (INIS)

    An efficient surface functionalization of polyurethane (PU) films has been obtained by ultraviolet (UV)-assisted modification in the presence of oxygen or acrylic acid (AA) vapours. Film analyses were carried out by water contact angle measurements, X-ray photoelectron spectroscopy (XPS) and Near-edge X-ray absorption fine structure (NEXAFS). Film hydrophilicity increased with photolysis time in the presence of oxygen or AA vapours. Incorporation of COO and C=O functional groups at the polymer surface after the UV-assisted treatments was observed. In addition, High resolution XPS and NEXAFS results showed that a thin film of poly (acrylic acid) (PAA) is formed over the PU films during the UV irradiation with AA vapours. The obtained results are compared with previous published oxygen and AA low-power plasma treatments. Similarity between both treatment methodologies is shown. UV surface functionalization and polymerization of PAA can be used instead of a traditional plasma treatment with the advantage of set-up simplicity and lower costs.

  17. Vapour Growth of Micro-Coiled Ceramic Fibers and their Properties

    OpenAIRE

    Motojima, S.; Hasegawa, I; Iwanaga, H.

    1995-01-01

    Micro-coiled fibers of carbon, SiC, Si3N4 TiC, ZrC and HfC were prepared by a metal-impurity activated chemical vapor deposition or vapour phase metallizing of the coiled carbon fibers. The growth conditions, morphology, growth mechanism and some properties were examined. The double-coiled carbon fibers were prepared using acetylene as a carbon source and various powders or plates of transition metals, metal carbides, MoS2, Ti2O3, and Ni single crystal plate as a catalyst at 650-850°C. The tr...

  18. Formation of silicon nanowire packed films from metallurgical-grade silicon powder using a two-step metal-assisted chemical etching method

    Science.gov (United States)

    Ouertani, Rachid; Hamdi, Abderrahmen; Amri, Chohdi; Khalifa, Marouan; Ezzaouia, Hatem

    2014-10-01

    In this work, we use a two-step metal-assisted chemical etching method to produce films of silicon nanowires shaped in micrograins from metallurgical-grade polycrystalline silicon powder. The first step is an electroless plating process where the powder was dipped for few minutes in an aqueous solution of silver nitrite and hydrofluoric acid to permit Ag plating of the Si micrograins. During the second step, corresponding to silicon dissolution, we add a small quantity of hydrogen peroxide to the plating solution and we leave the samples to be etched for three various duration (30, 60, and 90 min). We try elucidating the mechanisms leading to the formation of silver clusters and silicon nanowires obtained at the end of the silver plating step and the silver-assisted silicon dissolution step, respectively. Scanning electron microscopy (SEM) micrographs revealed that the processed Si micrograins were covered with densely packed films of self-organized silicon nanowires. Some of these nanowires stand vertically, and some others tilt to the silicon micrograin facets. The thickness of the nanowire films increases from 0.2 to 10 μm with increasing etching time. Based on SEM characterizations, laser scattering estimations, X-ray diffraction (XRD) patterns, and Raman spectroscopy, we present a correlative study dealing with the effect of the silver-assisted etching process on the morphological and structural properties of the processed silicon nanowire films.

  19. Graphene synthesis by laser-assisted chemical vapor deposition on Ni plate and the effect of process parameters on uniform graphene growth

    International Nuclear Information System (INIS)

    A fast, simple technique was developed to fabricate few-layer graphene films at ambient pressure and room temperature by laser-assisted chemical vapor deposition on polycrystalline Ni plates. Laser scanning speed was found as the most important factor in the production of few-layer graphene. The quality of graphene films was controlled by varying the laser power. Uniform graphene ribbons with a width of 1.5 mm and a length of 16 mm were obtained at a scanning speed of 1.3 mm/s and a laser power of 600 W. The developed technique provided a promising application of a high-power laser system to fabricate a graphene film. - Highlights: • Uniform few-layer graphene was fabricated at room temperature and ambient conditions. • Laser-assisted chemical vapor deposition was used to grow the layers in a few seconds. • The effect of process parameters on graphene growth was discussed. • This cost effective method could facilitate the integration of graphene in electronic devices

  20. UTLS water vapour from SCIAMACHY limb measurementsV3.01 (2002-2012)

    Science.gov (United States)

    Weigel, K.; Rozanov, A.; Azam, F.; Bramstedt, K.; Damadeo, R.; Eichmann, K.-U.; Gebhardt, C.; Hurst, D.; Kraemer, M.; Lossow, S.; Read, W.; Spelten, N.; Stiller, G. P.; Walker, K. A.; Weber, M.; Bovensmann, H.; Burrows, J. P.

    2016-01-01

    The SCanning Imaging Absorption spectroMeter for Atmospheric CHartographY (SCIAMACHY) aboard the Envisat satellite provided measurements from August 2002 until April 2012. SCIAMACHY measured the scattered or direct sunlight using different observation geometries. The limb viewing geometry allows the retrieval of water vapour at about 10-25 km height from the near-infrared spectral range (1353-1410 nm). These data cover the upper troposphere and lower stratosphere (UTLS), a region in the atmosphere which is of special interest for a variety of dynamical and chemical processes as well as for the radiative forcing. Here, the latest data version of water vapour (V3.01) from SCIAMACHY limb measurements is presented and validated by comparisons with data sets from other satellite and in situ measurements. Considering retrieval tests and the results of these comparisons, the V3.01 data are reliable from about 11 to 23 km and the best results are found in the middle of the profiles between about 14 and 20 km. Above 20 km in the extra tropics V3.01 is drier than all other data sets. Additionally, for altitudes above about 19 km, the vertical resolution of the retrieved profile is not sufficient to resolve signals with a short vertical structure like the tape recorder. Below 14 km, SCIAMACHY water vapour V3.01 is wetter than most collocated data sets, but the high variability of water vapour in the troposphere complicates the comparison. For 14-20 km height, the expected errors from the retrieval and simulations and the mean differences to collocated data sets are usually smaller than 10 % when the resolution of the SCIAMACHY data is taken into account. In general, the temporal changes agree well with collocated data sets except for the Northern Hemisphere extratropical stratosphere, where larger differences are observed. This indicates a possible drift in V3.01 most probably caused by the incomplete treatment of volcanic aerosols in the retrieval. In all other regions a

  1. RESEARCH NOTE WCA repulsive and attractive contributions to the thermodynamic properties at the vapour-liquid equilibrium

    Science.gov (United States)

    Cuadros, F.; Mulero, A.; Faundez, C. A.

    The Lennard-Jones attractive and repulsive contributions of intermolecular forces (as separated in the Weeks-Chandler-Andersen (WCA) theory) to the pressure and chemical potential of coexisting vapour and liquid phases are obtained by using an equation of state recently proposed by us. Some comments are given about the computer simulation results obtained by Plackov and Sadus (1997, Fluid Phase Equilib., 134, 77) using the McQuarrie-Katz separation of the intermolecular potential.

  2. Solid-State Spun Fibers from 1 mm Long Carbon Nanotube Forests Synthesized by Water-Assisted Chemical Vapor Deposition

    Science.gov (United States)

    Zhang, Shanju; Zhu, Lingbo; Minus, Marilyn L.; Chae, han Gi; Jagannathan, Sudhakar; Wong, Ching-Ping; Kowalik, Janusz; Roberson, Luke B.; Kumar, Satish

    2007-01-01

    In this work, we report continuous carbon nanotube fibers dry-drawn directly from water-assisted CVD grown forests with millimeter scale length. As-drawn nanotube fibers exist as aerogel and can be transformed into more compact fibers through twisting or densification with a volatile liquid. Nanotube fibers are characterized by scanning electron microscopy (SEM), X-ray photoelectron spectroscopy (XPS), Raman microscopy and wide-angle X-ray diffraction (WAXD). Mechanical behavior and electrical conductivity of the post-treated nanotube fibers are investigated.

  3. Reviewing Some Crucial Concepts of Gibbs Energy in Chemical Equilibrium Using a Computer-Assisted, Guided-Problem-Solving Approach

    Science.gov (United States)

    Borge, Javier

    2015-01-01

    G, G°, ?rG, ?rG°, ?G, and ?G° are essential quantities to master the chemical equilibrium. Although the number of publications devoted to explaining these items is extremely high, it seems that they do not produce the desired effect because some articles and textbooks are still being written with some of these quantities that appear to be…

  4. Structural and XPS studies of PSi/TiO{sub 2} nanocomposites prepared by ALD and Ag-assisted chemical etching

    Energy Technology Data Exchange (ETDEWEB)

    Iatsunskyi, Igor, E-mail: yatsunskiy@gmail.com [NanoBioMedical Centre, Adam Mickiewicz University, 85 Umultowska Str., 61-614 Poznan (Poland); Kempiński, Mateusz [NanoBioMedical Centre, Adam Mickiewicz University, 85 Umultowska Str., 61-614 Poznan (Poland); Faculty of Physics, Adam Mickiewicz University, Umultowska 85, 61-614 (Poland); Nowaczyk, Grzegorz; Jancelewicz, Mariusz [NanoBioMedical Centre, Adam Mickiewicz University, 85 Umultowska Str., 61-614 Poznan (Poland); Pavlenko, Mykola [Department of Experimental Physics, Odessa National I.I. Mechnikov University, 42, Pastera Str., 65023 Odessa (Ukraine); Załęski, Karol [NanoBioMedical Centre, Adam Mickiewicz University, 85 Umultowska Str., 61-614 Poznan (Poland); Jurga, Stefan [NanoBioMedical Centre, Adam Mickiewicz University, 85 Umultowska Str., 61-614 Poznan (Poland); Department of Macromolecular Physics, Adam Mickiewicz University, Umultowska 85, 61-614 Poznan (Poland)

    2015-08-30

    Highlights: • Porous silicon/TiO{sub 2} nanocomposites have been investigated. • Morphology and chemical composition of PSi/TiO{sub 2} nanocomposites were established. • Valence-band XPS maximums for PSi/TiO{sub 2} nanocomposites were found and analyzed. - Abstract: PSi/TiO{sub 2} nanocomposites fabricated by atomic layer deposition (ALD) and metal-assisted chemical etching (MACE) were investigated. The morphology and phase structure of PSi/TiO{sub 2} nanocomposites were studied by means of scanning electron microscopy (SEM), transmission electron microscopy (TEM) with an energy dispersive X-ray spectroscopy (EDX) and Raman spectroscopy. The mean size of TiO{sub 2} nanocrystals was determined by TEM and Raman spectroscopy. X-ray photoelectron spectroscopy (XPS) was used to analyze the chemical elemental composition by observing the behavior of the Ti 2p, O 1s and Si 2p lines. TEM, Raman spectroscopy and XPS binding energy analysis confirmed the formation of TiO{sub 2} anatase phase inside the PSi matrix. The XPS valence band analysis was performed in order to investigate the modification of PSi/TiO{sub 2} nanocomposites electronic structure. Surface defects states of Ti{sup 3+} at PSi/TiO{sub 2} nanocomposites were identified by analyzing of XPS valence band spectra.

  5. Adhesion of nitrile rubber to UV-assisted surface chemical modified PET fabric, part II: Interfacial characterization of MDI grafted PET

    Science.gov (United States)

    Razavizadeh, Mahmoud; Jamshidi, Masoud

    2016-08-01

    Fiber to rubber adhesion is an important subject in rubber industry. It is well known that surface treatment (i.e. physical, mechanical and chemical) is an effective method to improve interfacial bonding of fibers and/or fabrics to rubbers. UV irradiation is an effective method which has been used to increase fabric-rubber interfacial interactions. In this research UV assisted chemical modification of PET fabrics was used to increase PET to nitrile rubber (NBR) adhesion. Nitrile rubber is a perfect selection as fuel and oil resistant rubber. However it has weak bonding to PET fabric. For this purpose PET fabric was carboxylated under UV irradiation and then methylenediphenyl diisocyanate (MDI) was grafted on carboxylated PET. The chemical composition of the fabric before and after surface treatment was investigated by X-ray photoelectron spectroscopy (XPS). The sectional morphology of the experimental PET fibers and the interface between rubber compound and PET fabric was studied using scanning electron microscope (SEM). The morphology and structure of the product were analyzed by an energy dispersive X-ray spectrometer (EDX). FTIR-ATR and H NMR analysis were used to assess surface modifications on the PET irradiated fabrics.

  6. Landmine Detection Technologies to TraceExplosive Vapour Detection Techniques

    Directory of Open Access Journals (Sweden)

    J. C. Kapoor

    2007-11-01

    Full Text Available Large quantity of explosive is manufactured worldwide for use in various types of ammunition,arms, and mines, and used in armed conflicts. During manufacturing and usage of the explosiveequipment, some of the explosive residues are released into the environment in the form ofcontaminated effluents, unburnt explosives fumes and vapours. Limited but uncontrolledcontinuous release of trace vapours also takes place when explosive-laden landmines are deployedin the field. One of the major technological challenges in post-war scenario worldwide is thedetection of landmines using these trace vapour signatures and neutralising them safely.  Differenttypes of explosives are utilised as the main charge in antipersonnel and antitank landmines. Inthis paper, an effort has been made to review the techniques so far available based on explosivevapour detection especially to detect the landmines. A comprehensive compilation of relevantinformation on the techniques is presented, and their maturity levels, shortcomings, and difficultiesfaced are highlighted.

  7. Infrared spectroscopy of the vapour over InI3

    International Nuclear Information System (INIS)

    The infrared spectra of the vapour of InI3 were studied by matrix-isolation and gas-phase techniques. The spectrum of the saturated vapour at 400 K isolated in an Ar-matrix is interpreted to arise from dimeric as well as monomeric molecules. Four fundamental vibration frequencies were assigned to the dimer. Superheating of the vapour resulted in a decrease of the dimer relative to the monomer and, at 990 K, the appearance of InI(g). The gas-phase spectrum (at 500 K) showed three fundamentals of the monomer and a single low-intensity absorption which could be attributed to the dimeric molecule. (author). 17 refs., 2 figs., 4 tabs

  8. Simultaneous negative permittivity and permeability in a coherent atomic vapour

    Institute of Scientific and Technical Information of China (English)

    Shen Jian-Qi

    2007-01-01

    A new quantum optical mechanism to realize simultaneously negative electric permittivity and magnetic permeability is suggested. In order to obtain a negative permeability, we choose a proper atomic configuration that can dramatically enhance the contribution of the magnetic-dipole allowed transition via the atomic phase coherence. It is shown that the atomic system chosen with proper optical parameters can give rise to striking electromagnetic responses (leading to a negative refractive index) and that the atomic vapour becomes a left-handed medium in an optical frequency band. Differing from the previous schemes of artificial composite metamaterials (based on classical electromagnetic theory) to achieve the left-handed materials, which consist of anisotropic millimetre-scale composite structure units, the left-handed atomic vapour presented here is isotropic and homogeneous at the atomic-scale level. Such an advantage may be valuable in realizing the superlens (and hence perfect image) with left-handed atomic vapour.

  9. The ignitability of petrol vapours and potential for vapour phase explosion by use of TASER® law enforcement electronic control device.

    Science.gov (United States)

    Clarke, C; Andrews, S P

    2014-12-01

    An experimental study was made of the potential of the TASER-X26™ law enforcement electronic control device to ignite petrol vapours if used by an officer to incapacitate a person soaked in petrol, or within a flammable atmosphere containing petrol vapour. Bench scale tests have shown that a wooden mannequin with pig skin covering the chest was a suitable representation of a human target. Full scale tests using the mannequin have shown that the arc from a TASER-X26™ is capable of igniting petrol/air vapours on a petrol-soaked person. Further tests in a 1/5 scale and a full scale compartment have shown that if a TASER is used within a compartment, a petrol vapour explosion (deflagration) may be achieved. It is evident from this research that if used in a flammable vapour rich environment, the device could prove fatal not only to the target but the TASER® operator as well. PMID:25498927

  10. Validation of SCIAMACHY AMC-DOAS water vapour columns

    Directory of Open Access Journals (Sweden)

    S. Noël

    2005-01-01

    Full Text Available A first validation of water vapour total column amounts derived from measurements of the SCanning Imaging Absorption spectroMeter for Atmospheric CHartographY (SCIAMACHY in the visible spectral region has been performed. For this purpose, SCIAMACHY water vapour data have been determined for the year 2003 using an extended version of the Differential Optical Absorption Spectroscopy (DOAS method, called Air Mass Corrected (AMC-DOAS. The SCIAMACHY results are compared with corresponding water vapour measurements by the Special Sensor Microwave Imager (SSM/I and with model data from the European Centre for Medium-Range Weather Forecasts (ECMWF. In confirmation of previous results it could be shown that SCIAMACHY derived water vapour columns are typically slightly lower than both SSM/I and ECMWF data, especially over ocean areas. However, these deviations are much smaller than the observed scatter of the data which is caused by the different temporal and spatial sampling and resolution of the data sets. For example, the overall difference with ECMWF data is only -0.05 g/cm2 whereas the typical scatter is in the order of 0.5 g/cm2. Both values show almost no variation over the year. In addition, first monthly means of SCIAMACHY water vapour data have been computed. The quality of these monthly means is currently limited by the availability of calibrated SCIAMACHY spectra. Nevertheless, first comparisons with ECMWF data show that SCIAMACHY (and similar instruments are able to provide a new independent global water vapour data set.

  11. Validation of SCIAMACHY AMC-DOAS water vapour columns

    Directory of Open Access Journals (Sweden)

    S. Noël

    2005-04-01

    Full Text Available A first validation of water vapour total column amounts derived from measurements of the SCanning Imaging Absorption spectroMeter for Atmospheric CHartographY (SCIAMACHY in the visible spectral region has been performed. For this purpose, SCIAMACHY water vapour data have been determined for the year 2003 using an extended version of the Differential Optical Absorption Spectroscopy (DOAS method, called Air Mass Corrected (AMC-DOAS. The SCIAMACHY results are compared with corresponding water vapour measurements by the Special Sensor Microwave Imager (SSM/I and with model data from the European Centre for Medium-Range Weather Forecasts (ECMWF.

    In confirmation of previous results it could be shown that SCIAMACHY derived water vapour columns are typically slightly lower than both SSM/I and ECMWF data, especially over ocean areas. However, these deviations are much smaller than the observed scatter of the data which is caused by the different temporal and spatial sampling and resolution of the data sets. For example, the overall difference with ECMWF data is only −0.05 g/cm2 whereas the typical scatter is in the order of 0.5 g/cm2. Both values show almost no variation over the year.

    In addition, first monthly means of SCIAMACHY water vapour data have been computed. The quality of these monthly means is currently limited by the availability of calibrated SCIAMACHY spectra. Nevertheless, first comparisons with ECMWF data show that SCIAMACHY (and similar instruments are able to provide a new independent global water vapour data set.

  12. Could water vapour be the culprit in global warming?

    International Nuclear Information System (INIS)

    It is easy to understand why most people - and many governments - are quick to blame ''global warming'' for apparently extreme variations in weather and seasonal trends. ''Greenhouse gases'' have long received a bad press, and carbon dioxide is often singled out as the culprit in global warming. Yet a recent study led by Richard Learner of Imperial College in London supports the possibility that water vapour could be a major contributor to atmospheric heating (D Belmiloud et al. 2000 Geophysical Res. Lett. 27 3703). In the February issue of Physics World, Ahilleas Maurellis of the Space Research Organisation Netherlands (SRON), Utrecht, reveals the role water vapour plays in our atmosphere. (U.K.)

  13. Air and Soil Water Vapour Density Variations in Akungba Akoko

    OpenAIRE

    Afolabi O.M.

    2015-01-01

    – A temperature and humidity measuring equipment constructed with Silicon lab Si7015 integrated circuit sensor was used to monitor temperature and humidity, compute water saturation and vapour densities for air and soil and to interpret three days variations in Akungba Akoko. The sensors were inserted 5 cm into the soil and 2m away in the troposphere. Two hour records of both parameters were taken from 9 am to 5 pm for 3 days. Air and soil water saturation and vapour density data were compute...

  14. Successful definition of nanowire and porous Si regions of different porosity levels by regular positive photoresist using metal-assisted chemical etching

    International Nuclear Information System (INIS)

    A simple and efficient method for selective formation of porous Si areas using regular photoresist as a masking layer is presented. Such a simple masking layer is sufficient to create a wide range of porosity levels through metal-assisted chemical etching (MaCE) using platinum, palladium and silver nanoparticles. Reproducible porous areas with a minimum feature size of 5 µm were produced on Si wafers. The pore size and height are the functions of the etching time and type of nanoparticles. Using Ag nanopaticles we have been able to obtain Si nanowires of about 30 µm height. Based on these results, a combination of positive photoresist and MaCE seems to be a reliable way for micron and submicron patterning of nanowire and porous areas on Si wafers, which is simple, inexpensive and compatible with integrated circuit fabrication techniques

  15. Structural and photoluminescent properties of nanowires formed by the metal-assisted chemical etching of monocrystalline silicon with different doping level

    International Nuclear Information System (INIS)

    Silicon-nanowire layers grown by the metal-assisted chemical etching of (100)-oriented p-type monocrystalline silicon substrates with a resistivity of 10 and 0.001 Ω · cm are studied by electron microscopy, Raman scattering, and photoluminescence measurements. It is established that nanowires grown on lightly doped substrates are structurally nonporous and formed as crystalline cores covered by nanocrystals 3–5 nm in dimensions. Nanowires grown on heavily doped substrates are structurally porous and contain both small nanocrystals and coarser crystallites with equilibrium charge carriers that influence interband radiative recombination. It is found that the photoluminescence intensity of nanowires in the spectral range 1.3–2.0 eV depends on the presence of molecular oxygen

  16. Structural and photoluminescent properties of nanowires formed by the metal-assisted chemical etching of monocrystalline silicon with different doping level

    Energy Technology Data Exchange (ETDEWEB)

    Georgobiani, V. A., E-mail: v.georgobiani@gmail.com; Gonchar, K. A.; Osminkina, L. A.; Timoshenko, V. Yu. [Lomonosov Moscow State University, Faculty of Physics (Russian Federation)

    2015-08-15

    Silicon-nanowire layers grown by the metal-assisted chemical etching of (100)-oriented p-type monocrystalline silicon substrates with a resistivity of 10 and 0.001 Ω · cm are studied by electron microscopy, Raman scattering, and photoluminescence measurements. It is established that nanowires grown on lightly doped substrates are structurally nonporous and formed as crystalline cores covered by nanocrystals 3–5 nm in dimensions. Nanowires grown on heavily doped substrates are structurally porous and contain both small nanocrystals and coarser crystallites with equilibrium charge carriers that influence interband radiative recombination. It is found that the photoluminescence intensity of nanowires in the spectral range 1.3–2.0 eV depends on the presence of molecular oxygen.

  17. Enhanced Etching, Surface Damage Recovery, and Submicron Patterning of Hybrid Perovskites using a Chemically Gas-Assisted Focused-Ion Beam for Subwavelength Grating Photonic Applications

    KAUST Repository

    Alias, Mohd Sharizal Bin

    2015-12-22

    The high optical gain and absorption of organic–inorganic hybrid perovskites have attracted attention for photonic device applications. However, owing to the sensitivity of organic moieties to solvents and temperature, device processing is challenging, particularly for patterning. Here, we report the direct patterning of perovskites using chemically gas-assisted focused-ion beam (GAFIB) etching with XeF2 and I2 precursors. We demonstrate etching enhancement in addition to controllability and marginal surface damage compared to focused-ion beam (FIB) etching without precursors. Utilizing the GAFIB etching, we fabricated a uniform and periodic submicron perovskite subwavelength grating (SWG) absorber with broadband absorption and nanoscale precision. Our results demonstrate the use of FIB as a submicron patterning tool and a means of providing surface treatment (after FIB patterning to minimize optical loss) for perovskite photonic nanostructures. The SWG absorber can be patterned on perovskite solar cells to enhance the device efficiency through increasing light trapping and absorption.

  18. Direct synthesis of large area graphene on insulating substrate by gallium vapor-assisted chemical vapor deposition

    Energy Technology Data Exchange (ETDEWEB)

    Murakami, Katsuhisa, E-mail: k.murakami@bk.tsukuba.ac.jp; Hiyama, Takaki; Kuwajima, Tomoya; Fujita, Jun-ichi [Institute of Applied Physics, Graduate School of Pure and Applied Sciences, University of Tsukuba, Tsukuba 305-8573 (Japan); Tsukuba Research Center for Interdisciplinary Materials Science, University of Tsukuba, Tsukuba 305-8573 (Japan); Tanaka, Shunsuke; Hirukawa, Ayaka [Institute of Applied Physics, Graduate School of Pure and Applied Sciences, University of Tsukuba, Tsukuba 305-8573 (Japan); Kano, Emi [Institute of Applied Physics, Graduate School of Pure and Applied Sciences, University of Tsukuba, Tsukuba 305-8573 (Japan); National Institute for Materials Science, Tsukuba 305-0047 (Japan); Takeguchi, Masaki [National Institute for Materials Science, Tsukuba 305-0047 (Japan)

    2015-03-02

    A single layer of graphene with dimensions of 20 mm × 20 mm was grown directly on an insulating substrate by chemical vapor deposition using Ga vapor catalysts. The graphene layer showed highly homogeneous crystal quality over a large area on the insulating substrate. The crystal quality of the graphene was measured by Raman spectroscopy and was found to improve with increasing Ga vapor density on the reaction area. High-resolution transmission electron microscopy observations showed that the synthesized graphene had a perfect atomic-scale crystal structure within its grains, which ranged in size from 50 nm to 200 nm.

  19. Direct synthesis of large area graphene on insulating substrate by gallium vapor-assisted chemical vapor deposition

    International Nuclear Information System (INIS)

    A single layer of graphene with dimensions of 20 mm × 20 mm was grown directly on an insulating substrate by chemical vapor deposition using Ga vapor catalysts. The graphene layer showed highly homogeneous crystal quality over a large area on the insulating substrate. The crystal quality of the graphene was measured by Raman spectroscopy and was found to improve with increasing Ga vapor density on the reaction area. High-resolution transmission electron microscopy observations showed that the synthesized graphene had a perfect atomic-scale crystal structure within its grains, which ranged in size from 50 nm to 200 nm

  20. Carbon diffusion in uncoated and titanium nitride coated iron substrates during microwave plasma assisted chemical vapor deposition of diamond

    International Nuclear Information System (INIS)

    Auger Electron Spectroscopy has been employed to investigate the effectiveness of thin films of TiN as barriers to carbon diffusion during Chemical Vapor Deposition (CVD) of diamond onto Fe substrates. Auger Depth Profiling was used to monitor the C concentration in the TiN layer, through the interface and into the substrate both before and after CVD diamond deposition. The results show that a layer of TiN only 250 Angstroems thick is sufficient to inhibit soot formation on the Fe surface and C diffusion into the Fe bulk. 14 refs., 4 figs