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Sample records for assisted chemical vapor

  1. Gallium assisted plasma enhanced chemical vapor deposition of silicon nanowires

    Energy Technology Data Exchange (ETDEWEB)

    Zardo, I; Roessler, J; Frimmer, M; Fontcuberta i Morral, A [Walter Schottky Institut, Technische Universitaet Muenchen, Am Coulombwall, D-85748 Garching (Germany); Yu, L; Alet, Pierre Jean; Roca i Cabarrocas, P [LPICM, Ecole Polytechnique, CNRS, F-91128 Palaiseau (France); Conesa-Boj, S; Estrade, S; Peiro, F; Arbiol, J; Morante, J R [EME/XaRMAE/IN2UB, Departamento d' Electronica, Universitat de Barcelona, MartIi Franques, E-08028, Barcelona (Spain)

    2009-04-15

    Silicon nanowires have been grown with gallium as catalyst by plasma enhanced chemical vapor deposition. The morphology and crystalline structure has been studied by electron microscopy and Raman spectroscopy as a function of growth temperature and catalyst thickness. We observe that the crystalline quality of the wires increases with the temperature at which they have been synthesized. The crystalline growth direction has been found to vary between <111> and <112>, depending on both the growth temperature and catalyst thickness. Gallium has been found at the end of the nanowires, as expected from the vapor-liquid-solid growth mechanism. These results represent good progress towards finding alternative catalysts to gold for the synthesis of nanowires.

  2. Phase Equilibrium of TiO2 Nanocrystals in Flame-Assisted Chemical Vapor Deposition.

    Science.gov (United States)

    Liu, Changran; Camacho, Joaquin; Wang, Hai

    2017-10-23

    Nano-scale titanium oxide (TiO2) is a material useful for a wide range of applications. In a previous study, we showed that TiO2 nanoparticles of both rutile and anatase crystal phases could be synthesized over the size range of 5 to 20 nm in flame-assisted chemical vapor deposition. While rutile was unexpectedly dominant in oxygen-lean synthesis conditions, anatase is the preferred phase in oxygen-rich gases. The observation is in contrast to the 14 nm rutile-anatase crossover size derived from the existing crystal-phase equilibrium model. In the present work, we made additional measurements over a wider range of synthesis conditions; the results confirm the earlier observations. We propose an improved model for the surface energy that considers the role of oxygen desorption at high temperatures. The model successfully explains the observations made in the current and previous work. The current results provide a useful path to designing flame-assisted chemical vapor deposition of TiO2 nanocrystals with controllable crystal phases. © 2017 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  3. Low-Temperature Deposition of Zinc Oxide Film by Plasma-Assisted Mist Chemical Vapor Deposition

    Science.gov (United States)

    Takenaka, Kosuke; Okumura, Yusuke; Setsuhara, Yuichi

    2012-08-01

    Zinc oxide (ZnO) film deposition using a plasma-assisted mist chemical vapor deposition (CVD) with an inductively-coupled plasma source has been performed and the effects of the plasma exposure on film properties have been investigated with oxygen mixture ratio as a parameter. With increasing oxygen mixture ratio to Ar+O2(10%), the X-ray diffraction (XRD) results showed evident peaks of ZnO(0002), indicating that highly c-axis-oriented films were grown at low substrate temperatures below 200 °C. The deposition rate of ZnO films was as high as 100 nm/min. ZnO films with an optical transmittance of 75% for the visible region and a band gap energy of 3.32 eV have been obtained by using plasma-assisted mist CVD.

  4. Plasma-Assisted Mist Chemical Vapor Deposition of Zinc Oxide Films Using Solution of Zinc Acetate

    Science.gov (United States)

    Takenaka, Kosuke; Okumura, Yusuke; Setsuhara, Yuichi

    2013-01-01

    Zinc oxide (ZnO) film deposition has been carried out by plasma-assisted mist chemical vapor deposition (CVD) using a solution of zinc acetate [Zn(CH3COO)2], and the effects of plasma exposure on film properties have been investigated in terms of RF power. With increasing RF power, the results of the X-ray diffraction (XRD) patterns of ZnO films with plasma exposure showed the existence of crystallized ZnO films with plasma exposure. Under this condition, the substrate temperature was as low as 200 °C for a plasma exposure time of 20 min. The surface morphology shown by scanning electron microscopy (SEM) images shows that the ZnO films were textured with round grains, which is attributed to the effect of the use of mist with the precursor.

  5. Low Temperature Metal Free Growth of Graphene on Insulating Substrates by Plasma Assisted Chemical Vapor Deposition.

    Science.gov (United States)

    Muñoz, R; Munuera, C; Martínez, J I; Azpeitia, J; Gómez-Aleixandre, C; García-Hernández, M

    2017-03-01

    Direct growth of graphene films on dielectric substrates (quartz and silica) is reported, by means of remote electron cyclotron resonance plasma assisted chemical vapor deposition r-(ECR-CVD) at low temperature (650°C). Using a two step deposition process- nucleation and growth- by changing the partial pressure of the gas precursors at constant temperature, mostly monolayer continuous films, with grain sizes up to 500 nm are grown, exhibiting transmittance larger than 92% and sheet resistance as low as 900 Ω·sq-1. The grain size and nucleation density of the resulting graphene sheets can be controlled varying the deposition time and pressure. In additon, first-principles DFT-based calculations have been carried out in order to rationalize the oxygen reduction in the quartz surface experimentally observed. This method is easily scalable and avoids damaging and expensive transfer steps of graphene films, improving compatibility with current fabrication technologies.

  6. Copper-vapor-assisted chemical vapor deposition for high-quality and metal-free single-layer graphene on amorphous SiO2 substrate.

    Science.gov (United States)

    Kim, Hyungki; Song, Intek; Park, Chibeom; Son, Minhyeok; Hong, Misun; Kim, Youngwook; Kim, Jun Sung; Shin, Hyun-Joon; Baik, Jaeyoon; Choi, Hee Cheul

    2013-08-27

    We report that high-quality single-layer graphene (SLG) has been successfully synthesized directly on various dielectric substrates including amorphous SiO2/Si by a Cu-vapor-assisted chemical vapor deposition (CVD) process. The Cu vapors produced by the sublimation of Cu foil that is suspended above target substrates without physical contact catalyze the pyrolysis of methane gas and assist nucleation of graphene on the substrates. Raman spectra and mapping images reveal that the graphene formed on a SiO2/Si substrate is almost defect-free and homogeneous single layer. The overall quality of graphene grown by Cu-vapor-assisted CVD is comparable to that of the graphene grown by regular metal-catalyzed CVD on a Cu foil. While Cu vapor induces the nucleation and growth of SLG on an amorphous substrate, the resulting SLG is confirmed to be Cu-free by synchrotron X-ray photoelectron spectroscopy. The SLG grown by Cu-vapor-assisted CVD is fabricated into field effect transistor devices without transfer steps that are generally required when SLG is grown by regular CVD process on metal catalyst substrates. This method has overcome two important hurdles previously present when the catalyst-free CVD process is used for the growth of SLG on fused quartz and hexagonal boron nitride substrates, that is, high degree of structural defects and limited size of resulting graphene, respectively.

  7. Growth mechanism of long aligned multiwall carbon nanotube arrays by water-assisted chemical vapor deposition.

    Science.gov (United States)

    Yun, YeoHeung; Shanov, Vesselin; Tu, Yi; Subramaniam, Srinivas; Schulz, Mark J

    2006-11-30

    Highly aligned arrays of multiwalled carbon nanotube (MWCNT) on layered Si substrates have been synthesized by chemical vapor deposition (CVD). The effect of the substrate design and the process parameters on the growth mechanism were studied. Adding water vapor to the reaction gas mixture of hydrogen and ethylene enhanced the growth which led to synthesis of longer CNT arrays with high density. Environmental scanning electron microscopy (ESEM), energy-dispersive spectroscopy (EDS), and atomic force microscopy (AFM) were used to analyze the CNT morphology and composition. Quadrupole mass spectroscopy (QMS) provided in-situ information on the gas spices within the reaction zone. On the basis of results, we verified the top growth mechanism and evaluated the reason of decline and stoppage of the CNT growth after extended period of deposition. Multilayered Si substrates with a top film of Al2O3, having appropriate roughness, provide favorable conditions to form catalyst islands with uniform distribution and size. Using water-assisted CVD process and optimized substrate design, our group succeeded to grow vertically aligned, patterned MWCNT up to 4-mm long. The arrays were of high purity and weak adhesion which allowed to be peeled off easily from the substrate.

  8. Microstructural and frictional control of diamond-like carbon films deposited on acrylic rubber by plasma assisted chemical vapor deposition

    NARCIS (Netherlands)

    Martinez-Martinez, D.; Schenkel, M.; Pei, Y.T.; Hosson, J.Th.M. De

    2011-01-01

    In this paper we concentrate on the microstructure of diamond-like carbon films prepared by plasma assisted chemical vapor deposition on acrylic rubber. The temperature variation produced by the ion impingement during plasma cleaning and subsequent film deposition was monitored and controlled as a

  9. Development of aerosol assisted chemical vapor deposition for thin film fabrication

    Science.gov (United States)

    Maulana, Dwindra Wilham; Marthatika, Dian; Panatarani, Camellia; Mindara, Jajat Yuda; Joni, I. Made

    2016-02-01

    Chemical vapor deposition (CVD) is widely used to grow a thin film applied in many industrial applications. This paper report the development of an aerosol assisted chemical vapor deposition (AACVD) which is one of the CVD methods. Newly developed AACVD system consists of a chamber of pyrex glass, two wire-heating elements placed to cover pyrex glass, a substrate holder, and an aerosol generator using an air brush sprayer. The temperature control system was developed to prevent condensation on the chamber walls. The control performances such as the overshoot and settling time were obtained from of the developed temperature controller. Wire-heating elements were controlled at certain setting value to heat the injected aerosol to form a thin film in the substrate. The performance of as-developed AACVD system tested to form a thin film where aerosol was sprayed into the chamber with a flow rate of 7 liters/minutes, and vary in temperatures and concentrations of precursor. The temperature control system have an overshoot around 25 °C from the desired set point temperature, very small temperature ripple 2 °C and a settling time of 20 minutes. As-developed AACVD successfully fabricated a ZnO thin film with thickness of below 1 µm. The performances of system on formation of thin films influenced by the generally controlled process such as values of setting temperature and concentration where the aerosol flow rate was fixed. Higher temperature was applied, the more uniform ZnO thin films were produced. In addition, temperature of the substrate also affected on surface roughness of the obtained films, while concentration of ZnO precursor determined the thickness of produce films. It is concluded that newly simple AACVD can be applied to produce a thin film.

  10. Water-assisted growth of graphene on carbon nanotubes by the chemical vapor deposition method.

    Science.gov (United States)

    Feng, Jian-Min; Dai, Ye-Jing

    2013-05-21

    Combining carbon nanotubes (CNTs) with graphene has been proved to be a feasible method for improving the performance of graphene for some practical applications. This paper reports a water-assisted route to grow graphene on CNTs from ferrocene and thiophene dissolved in ethanol by the chemical vapor deposition method in an argon flow. A double injection technique was used to separately inject ethanol solution and water for the preparation of graphene/CNTs. First, CNTs were prepared from ethanol solution and water. The injection of ethanol solution was suspended and water alone was injected into the reactor to etch the CNTs. Thereafter, ethanol solution was injected along with water, which is the key factor in obtaining graphene/CNTs. Transmission electron microscopy, scanning electron microscopy, X-ray diffraction, and Raman scattering analyses confirmed that the products were the hybrid materials of graphene/CNTs. X-ray photo-electron spectroscopy analysis showed the presence of oxygen rich functional groups on the surface of the graphene/CNTs. Given the activity of the graphene/CNT surface, CdS quantum dots adhered onto it uniformly through simple mechanical mixing.

  11. Microwave plasma-assisted chemical vapor deposition of porous carbon film as supercapacitive electrodes

    Science.gov (United States)

    Wu, Ai-Min; Feng, Chen-Chen; Huang, Hao; Paredes Camacho, Ramon Alberto; Gao, Song; Lei, Ming-Kai; Cao, Guo-Zhong

    2017-07-01

    Highly porous carbon film (PCF) coated on nickel foam was prepared successfully by microwave plasma-assisted chemical vapor deposition (MPCVD) with C2H2 as carbon source and Ar as discharge gas. The PCF is uniform and dense with 3D-crosslinked nanoscale network structure possessing high degree of graphitization. When used as the electrode material in an electrochemical supercapacitor, the PCF samples verify their advantageous electrical conductivity, ion contact and electrochemical stability. The test results show that the sample prepared under 1000 W microwave power has good electrochemical performance. It displays the specific capacitance of 62.75 F/g at the current density of 2.0 A/g and retains 95% of its capacitance after 10,000 cycles at the current density of 2.0 A/g. Besides, its near-rectangular shape of the cyclic voltammograms (CV) curves exhibits typical character of an electric double-layer capacitor, which owns an enhanced ionic diffusion that can fit the requirements for energy storage applications.

  12. Plasma-Assisted Mist Chemical Vapor Deposition of Zinc Oxide Films for Flexible Electronics

    Science.gov (United States)

    Takenaka, Kosuke; Uchida, Giichiro; Setsuhara, Yuichi

    2015-09-01

    Plasma-assisted mist chemical vapor deposition of ZnO films was performed for transparent conductive oxide formation of flexible electronics. In this study, ZnO films deposition using atmospheric-pressure He plasma generated by a micro-hollow cathode-type plasma source has been demonstrated. To obtain detail information according to generation of species in the plasma, the optical emission spectra of the atmospheric pressure He plasma with and without mist were measured. The result without mist shows considerable emissions of He lines, emissions attributed to the excitation and dissociation of air including N2 and O2 (N, O, and NO radials, and N2 molecule; N2 second positive band and first positive band), while the results with mist showed strong emissions attributed to the dissociation of H2O (OH and H radicals). The deposition of ZnO films was performed using atmospheric-pressure He plasma. The XRD patterns showed no crystallization of the ZnO films irradiated with pure He. On the other hand, the ZnO film crystallized with the irradiation with He/O2 mixture plasma. These results indicate that the atmospheric-pressure He/O2 mixture plasma has sufficient reactivity necessary for the crystallization of ZnO films at room temperature. This work was supported partly by The Grant-in-Aid for Scientific Research (KAKENHI) (Grant-in-Aid for Scientific Research(C)) from the Japan Society for the Promotion of Science (JSPS).

  13. Laser-assisted chemical vapor deposition setup for fast synthesis of graphene patterns

    Science.gov (United States)

    Zhang, Chentao; Zhang, Jianhuan; Lin, Kun; Huang, Yuanqing

    2017-05-01

    An automatic setup based on the laser-assisted chemical vapor deposition method has been developed for the rapid synthesis of graphene patterns. The key components of this setup include a laser beam control and focusing unit, a laser spot monitoring unit, and a vacuum and flow control unit. A laser beam with precision control of laser power is focused on the surface of a nickel foil substrate by the laser beam control and focusing unit for localized heating. A rapid heating and cooling process at the localized region is induced by the relative movement between the focalized laser spot and the nickel foil substrate, which causes the decomposing of gaseous hydrocarbon and the out-diffusing of excess carbon atoms to form graphene patterns on the laser scanning path. All the fabrication parameters that affect the quality and number of graphene layers, such as laser power, laser spot size, laser scanning speed, pressure of vacuum chamber, and flow rates of gases, can be precisely controlled and monitored during the preparation of graphene patterns. A simulation of temperature distribution was carried out via the finite element method, providing a scientific guidance for the regulation of temperature distribution during experiments. A multi-layer graphene ribbon with few defects was synthesized to verify its performance of the rapid growth of high-quality graphene patterns. Furthermore, this setup has potential applications in other laser-based graphene synthesis and processing.

  14. Upcycling Waste Lard Oil into Vertical Graphene Sheets by Inductively Coupled Plasma Assisted Chemical Vapor Deposition

    OpenAIRE

    Wu, Angjian; Li, Xiaodong; Yang, Jian; Du, Changming; Shen, Wangjun; Yan, Jianhua

    2017-01-01

    Vertical graphene (VG) sheets were single-step synthesized via inductively coupled plasma (ICP)-enhanced chemical vapor deposition (PECVD) using waste lard oil as a sustainable and economical carbon source. Interweaved few-layer VG sheets, H2, and other hydrocarbon gases were obtained after the decomposition of waste lard oil. The influence of parameters such as temperature, gas proportion, ICP power was investigated to tune the nanostructures of obtained VG, which indicated that a proper tem...

  15. Microstructural, chemical and textural characterization of ZnO nanorods synthesized by aerosol assisted chemical vapor deposition

    Energy Technology Data Exchange (ETDEWEB)

    Sáenz-Trevizo, A.; Amézaga-Madrid, P.; Fuentes-Cobas, L.; Pizá-Ruiz, P.; Antúnez-Flores, W.; Ornelas-Gutiérrez, C. [Centro de Investigación en Materiales Avanzados, S.C., Chihuahua, Chihuahua 31109 (Mexico); Pérez-García, S.A. [Centro de Investigación en Materiales Avanzados, S.C., Unidad Monterrey, Apodaca, Nuevo León 66600 (Mexico); Miki-Yoshida, M., E-mail: mario.miki@cimav.edu.mx [Centro de Investigación en Materiales Avanzados, S.C., Chihuahua, Chihuahua 31109 (Mexico)

    2014-12-15

    ZnO nanorods were synthesized by aerosol assisted chemical vapor deposition onto TiO{sub 2} covered borosilicate glass substrates. Deposition parameters were optimized and kept constant. Solely the effect of different nozzle velocities on the growth of ZnO nanorods was evaluated in order to develop a dense and uniform structure. The crystalline structure was characterized by conventional X-ray diffraction in grazing incidence and Bragg–Brentano configurations. In addition, two-dimensional grazing incidence synchrotron radiation diffraction was employed to determine the preferred growth direction of the nanorods. Morphology and growth characteristics analyzed by electron microscopy were correlated with diffraction outcomes. Chemical composition was established by X-ray photoelectron spectroscopy. X-ray diffraction results and X-ray photoelectron spectroscopy showed the presence of wurtzite ZnO and anatase TiO{sub 2} phases. Morphological changes noticed when the deposition velocity was lowered to the minimum, indicated the formation of relatively vertically oriented nanorods evenly distributed onto the TiO{sub 2} buffer film. By coupling two-dimensional X-ray diffraction and computational modeling with ANAELU it was proved that a successful texture determination was achieved and confirmed by scanning electron microscopy analysis. Texture analysis led to the conclusion of a preferred growth direction in [001] having a distribution width Ω = 20° ± 2°. - Highlights: • Uniform and pure single-crystal ZnO nanorods were obtained by AACVD technique. • Longitudinal and transversal axis parallel to the [001] and [110] directions, respectively. • Texture was determined by 2D synchrotron diffraction and electron microscopy analysis. • Nanorods have its [001] direction distributed close to the normal of the substrate. • Angular spread about the preferred orientation is 20° ± 2°.

  16. Direct Fabrication of Carbon Nanotubes STM Tips by Liquid Catalyst-Assisted Microwave Plasma-Enhanced Chemical Vapor Deposition

    Directory of Open Access Journals (Sweden)

    Fa-Kuei Tung

    2009-01-01

    Full Text Available Direct and facile method to make carbon nanotube (CNT tips for scanning tunneling microscopy (STM is presented. Cobalt (Co particles, as catalysts, are electrochemically deposited on the apex of tungsten (W STM tip for CNT growth. It is found that the quantity of Co particles is well controlled by applied DC voltage, concentration of catalyst solution, and deposition time. Using optimum growth condition, CNTs are successfully synthesized on the tip apex by catalyst-assisted microwave-enhanced chemical vapor deposition (CA-MPECVD. A HOPG surface is clearly observed at an atomic scale using the present CNT-STM tip.

  17. Crack-free yttria stabilized zirconia thin films by aerosol assisted chemical vapor deposition: Influence of water and carrier gas

    Energy Technology Data Exchange (ETDEWEB)

    Schlupp, M.V.F., E-mail: Meike.Schlupp@mat.ethz.ch [Nonmetallic Inorganic Materials, ETH Zuerich, Wolfgang-Pauli-Str. 10, 8093 Zuerich (Switzerland); Binder, S.; Martynczuk, J.; Prestat, M. [Nonmetallic Inorganic Materials, ETH Zuerich, Wolfgang-Pauli-Str. 10, 8093 Zuerich (Switzerland); Gauckler, L.J. [Nonmetallic Inorganic Materials, ETH Zuerich, Wolfgang-Pauli-Str. 10, 8093 Zuerich (Switzerland); International Institute for Carbon Neutral Energy Research (WPI-I2CNER), Kyushu University, 744 Moto-oka, Nishi-ku, Fukuoka 819-0395 (Japan)

    2012-11-01

    Yttria stabilized zirconia thin films are deposited on silicon single crystal substrates by aerosol assisted chemical vapor deposition from precursor solutions of zirconium and yttrium 2,4-pentanedionate in ethanol. Continuous films are obtained using pure oxygen, pure nitrogen, or mixtures of both as carrier gas. In the simultaneous presence of water and oxygen, crack formation is observed for films deposited at intermediate substrate temperatures (450 Degree-Sign C), while those deposited at low (300 Degree-Sign C) and high (600 Degree-Sign C) temperatures remain crack-free. Crack-free films can be deposited at 450 Degree-Sign C in a water-free setting, or in the presence of water using pure nitrogen as carrier gas. The addition of water to the precursor solutions also significantly reduces film growth rates. - Highlights: Black-Right-Pointing-Pointer Thin film deposition by aerosol assisted chemical vapor deposition (AA-CVD) Black-Right-Pointing-Pointer Yttria stabilized zirconia (YSZ) thin films deposited between 300 Degree-Sign C and 600 Degree-Sign C Black-Right-Pointing-Pointer Water decreases growth rates and leads to crack formation in AA-CVD of YSZ. Black-Right-Pointing-Pointer Crack-free YSZ thin films deposited using oxygen and/or nitrogen as carrier gas Black-Right-Pointing-Pointer YSZ thin films deposited by AA-CVD show low shrinkage on annealing at 1000 Degree-Sign C.

  18. Synthesis by aerosol assisted chemical vapor deposition and microstructural characterization of PbTiO{sub 3} thin films

    Energy Technology Data Exchange (ETDEWEB)

    Ramos-Cano, J.; Hurtado-Macías, A.; Antúnez-Flores, W.; Fuentes-Cobas, L.; González-Hernández, J.; Amézaga-Madrid, P.; Miki-Yoshida, M., E-mail: mario.miki@cimav.edu.mx

    2013-03-01

    Thin films of PbTiO{sub 3} were deposited onto (001) silicon single-crystal substrates by aerosol assisted chemical vapor deposition method at different temperatures, using organometallic precursors. With the objective of stabilizing and homogenizing the perovskite phase, the films were annealed at 800 °C, in a Pb-rich atmosphere, for 4 and 6 h. The evolution of compositions and microstructure of the films was characterized before and after annealing, by grazing incidence X-ray diffraction, two-dimensional detection of grazing incidence diffraction with synchrotron radiation, scanning electron microscopy and high resolution transmission electron microscopy. X-ray diffraction results showed that the crystalline structure of optimized PbTiO{sub 3} films corresponded to a tetragonal perovskite-type, with lattice parameters a = 0.387(4) nm and c = 0.406(4) nm. In addition, the inverse pole figure of the fiber texture representation, had a Gaussian (1, 1, 0) component and distribution width Ω = 15°. - Highlights: ► We report the synthesis of homogeneous PbTiO{sub 3} thin films on Si substrates. ► They were synthesized by aerosol assisted chemical vapor deposition method. ► Detailed characterization by X-ray diffraction and electron microscopy was performed. ► Crystalline structure of PbTiO{sub 3} films corresponded to a tetragonal perovskite-type. ► The fiber texture representation had a Gaussian (1, 1, 0) component.

  19. Upcycling Waste Lard Oil into Vertical Graphene Sheets by Inductively Coupled Plasma Assisted Chemical Vapor Deposition.

    Science.gov (United States)

    Wu, Angjian; Li, Xiaodong; Yang, Jian; Du, Changming; Shen, Wangjun; Yan, Jianhua

    2017-10-12

    Vertical graphene (VG) sheets were single-step synthesized via inductively coupled plasma (ICP)-enhanced chemical vapor deposition (PECVD) using waste lard oil as a sustainable and economical carbon source. Interweaved few-layer VG sheets, H₂, and other hydrocarbon gases were obtained after the decomposition of waste lard oil. The influence of parameters such as temperature, gas proportion, ICP power was investigated to tune the nanostructures of obtained VG, which indicated that a proper temperature and H₂ concentration was indispensable for the synthesis of VG sheets. Rich defects of VG were formed with a high I D / I G ratio (1.29), consistent with the dense edges structure observed in electron microscopy. Additionally, the morphologies, crystalline degree, and wettability of nanostructure carbon induced by PECVD and ICP separately were comparatively analyzed. The present work demonstrated the potential of our PECVD recipe to synthesize VG from abundant natural waste oil, which paved the way to upgrade the low-value hydrocarbons into advanced carbon material.

  20. Upcycling Waste Lard Oil into Vertical Graphene Sheets by Inductively Coupled Plasma Assisted Chemical Vapor Deposition

    Directory of Open Access Journals (Sweden)

    Angjian Wu

    2017-10-01

    Full Text Available Vertical graphene (VG sheets were single-step synthesized via inductively coupled plasma (ICP-enhanced chemical vapor deposition (PECVD using waste lard oil as a sustainable and economical carbon source. Interweaved few-layer VG sheets, H2, and other hydrocarbon gases were obtained after the decomposition of waste lard oil. The influence of parameters such as temperature, gas proportion, ICP power was investigated to tune the nanostructures of obtained VG, which indicated that a proper temperature and H2 concentration was indispensable for the synthesis of VG sheets. Rich defects of VG were formed with a high I D / I G ratio (1.29, consistent with the dense edges structure observed in electron microscopy. Additionally, the morphologies, crystalline degree, and wettability of nanostructure carbon induced by PECVD and ICP separately were comparatively analyzed. The present work demonstrated the potential of our PECVD recipe to synthesize VG from abundant natural waste oil, which paved the way to upgrade the low-value hydrocarbons into advanced carbon material.

  1. Properties of Erbium Doped Hydrogenated Amorphous Carbon Layers Fabricated by Sputtering and Plasma Assisted Chemical Vapor Deposition

    Directory of Open Access Journals (Sweden)

    V. Prajzler

    2008-01-01

    Full Text Available We report about properties of carbon layers doped with Er3+ ions fabricated by Plasma Assisted Chemical Vapor Deposition (PACVD and by sputtering on silicon or glass substrates. The structure of the samples was characterized by X-ray diffraction and their composition was determined by Rutherford Backscattering Spectroscopy and Elastic Recoil Detection Analysis. The Absorbance spectrum was taken in the spectral range from 400 nm to 600 nm. Photoluminescence spectra were obtained using two types of Ar laser (λex=514.5 nm, lex=488 nm and also using a semiconductor laser (λex=980 nm. Samples fabricated by magnetron sputtering exhibited typical emission at 1530 nm when pumped at 514.5 nm. 

  2. Aerosol - assisted Chemical Vapor Deposition of Metal Oxide Structures: Zinc Oxide Rods

    Czech Academy of Sciences Publication Activity Database

    Vallejos, S.; Pizúrová, Naděžda; Čechal, J.; Grácia, I.; Cané, C.

    2017-01-01

    Roč. 2017, Č. 127 (2017), č. článku e56127. ISSN 1940-087X Institutional support: RVO:68081723 Keywords : Zinc oxide * columnar structures * rods * AACVD * non-catalyzed growth * vapor-solid mechanism Subject RIV: CA - Inorganic Chemistry OBOR OECD: Polymer science Impact factor: 1.232, year: 2016 https://www.jove.com/video/56127

  3. Tris(phosphino)borato silver(I) complexes as precursors for metallic silver aerosol-assisted chemical vapor deposition.

    Science.gov (United States)

    McCain, Matthew N; Schneider, Sven; Salata, Michael R; Marks, Tobin J

    2008-04-07

    A series of light- and air-stable tris(phosphino)borato silver(I) complexes has been synthesized, structurally and spectroscopically characterized, and implemented in the growth of low resistivity metallic silver thin films by aerosol-assisted chemical vapor deposition (AACVD). Of the four complexes in the series, [RB(CH2PR'2) 3]AgPEt3 (R = Ph (1, 3), (n)Bu (2, 4); R' = Ph (1, 2), (i)Pr (3, 4), complexes 1 and 2 have been characterized by single-crystal X-ray diffraction. Complex 2 represents a significant improvement over previously available nonfluorinated Ag precursors, owing to ease of handling and efficient film deposition characteristics. Thermogravimetric analysis (TGA) shows that the thermolytic properties of these complexes can be significantly modified by altering the ligand structure. Polycrystalline cubic-phase Ag thin films were grown on glass, MgO(100), and 52100 steel substrates. Ag films of thicknesses 3 microm, grown at rates of 14-18 nm/min, exhibit low levels of extraneous element contamination by X-ray photoelectron spectroscopy (XPS). Atomic force microscopy (AFM) and scanning electron microscopy (SEM) indicate that film growth proceeds primarily via an island growth (Volmer-Weber) mechanism.

  4. Iron selenide films by aerosol assisted chemical vapor deposition from single source organometallic precursor in the presence of surfactants

    Energy Technology Data Exchange (ETDEWEB)

    Hussain, Raja Azadar [Department of Chemistry, Quaid-i-Azam University, 45320 Islamabad (Pakistan); Badshah, Amin, E-mail: aminbadshah@yahoo.com [Department of Chemistry, Quaid-i-Azam University, 45320 Islamabad (Pakistan); Younis, Adnan [School of Materials Science and Engineering, University of New South Wales, Sydney 2052, NSW (Australia); Khan, Malik Dilshad [Department of Chemistry, Quaid-i-Azam University, 45320 Islamabad (Pakistan); Akhtar, Javeed [Department of Physics, COMSATS Institute of Information Technology, Park Road, Chak Shahzad, Islamabad (Pakistan)

    2014-09-30

    This article presents the synthesis and characterization (multinuclear nuclear magnetic resonance, Fourier transform infrared spectroscopy, carbon–hydrogen–nitrogen–sulfur analyzer, atomic absorption spectrometry and thermogravimetric analysis) of a single source organometallic precursor namely 1-acetyl-3-(4-ferrocenylphenyl)selenourea for the fabrication of iron selenide (FeSe) films on glass substrates using aerosol assisted chemical vapor deposition (AACVD). The changes in the morphologies of the films have been monitored by the use of two different surfactants i.e. triton X-100 and tetraoctylphosphonium bromide during AACVD. The role of surfactant has been evaluated by examining the interaction of the surfactants with the precursor by using UV–vis spectroscopy and cyclic voltammetry. The fabricated FeSe films have been characterized with powder X-ray diffraction, scanning electron microscopy and energy dispersive spectroscopy. - Highlights: • Ferrocene incorporated selenourea (FIS) has been synthesized and characterized. • FeSe thin films have been fabricated from FIS. • Mechanism of film growth was studied with cyclic voltammetry and UV–vis spectroscopy.

  5. High growth rate homoepitaxial diamond film deposition at high temperatures by microwave plasma-assisted chemical vapor deposition

    Science.gov (United States)

    Vohra, Yogesh K. (Inventor); McCauley, Thomas S. (Inventor)

    1997-01-01

    The deposition of high quality diamond films at high linear growth rates and substrate temperatures for microwave-plasma chemical vapor deposition is disclosed. The linear growth rate achieved for this process is generally greater than 50 .mu.m/hr for high quality films, as compared to rates of less than 5 .mu.m/hr generally reported for MPCVD processes.

  6. Simple Chemical Vapor Deposition Experiment

    Science.gov (United States)

    Pedersen, Henrik

    2014-01-01

    Chemical vapor deposition (CVD) is a process commonly used for the synthesis of thin films for several important technological applications, for example, microelectronics, hard coatings, and smart windows. Unfortunately, the complexity and prohibitive cost of CVD equipment makes it seldom available for undergraduate chemistry students. Here, a…

  7. Performance Improvement of Microcrystalline p-SiC/i-Si/n-Si Thin Film Solar Cells by Using Laser-Assisted Plasma Enhanced Chemical Vapor Deposition

    Directory of Open Access Journals (Sweden)

    Hsin-Ying Lee

    2014-01-01

    Full Text Available The microcrystalline p-SiC/i-Si/n-Si thin film solar cells treated with hydrogen plasma were fabricated at low temperature using a CO2 laser-assisted plasma enhanced chemical vapor deposition (LAPECVD system. According to the micro-Raman results, the i-Si films shifted from 482 cm−1 to 512 cm−1 as the assisting laser power increased from 0 W to 80 W, which indicated a gradual transformation from amorphous to crystalline Si. From X-ray diffraction (XRD results, the microcrystalline i-Si films with (111, (220, and (311 diffraction were obtained. Compared with the Si-based thin film solar cells deposited without laser assistance, the short-circuit current density and the power conversion efficiency of the solar cells with assisting laser power of 80 W were improved from 14.38 mA/cm2 to 18.16 mA/cm2 and from 6.89% to 8.58%, respectively.

  8. Chemical vapor deposition of sialon

    Science.gov (United States)

    Landingham, R.L.; Casey, A.W.

    A laminated composite and a method for forming the composite by chemical vapor deposition are described. The composite includes a layer of sialon and a material to which the layer is bonded. The method includes the steps of exposing a surface of the material to an ammonia containing atmosphere; heating the surface to at least about 1200/sup 0/C; and impinging a gas containing N/sub 2/, SiCl/sub 4/, and AlCl/sub 3/ on the surface.

  9. Epitaxial ZnO Thin Films on a-Plane Sapphire Substrates Grown by Ultrasonic Spray-Assisted Mist Chemical Vapor Deposition

    Science.gov (United States)

    Nishinaka, Hiroyuki; Kamada, Yudai; Kameyama, Naoki; Fujita, Shizuo

    2009-12-01

    High-quality epitaxial ZnO thin films were grown by an ultrasonic spray-assisted mist chemical vapor deposition (CVD) on a-plane sapphire substrates with ZnO buffer layers. The ZnO thin films were grown with c-axis orientation without notable rotational domains. Surface morphologies and electrical properties were markedly improved as an effect of the ZnO buffer layers. The mobility in the ZnO epitaxial (main) layer was estimated to be 90 cm2/(V·s), which is reasonably high compared with those in ZnO layers grown by CVD processes. Photoluminescence at a low temperature (4.5 K) revealed a free A-exiton peak, and that at room temperature showed a strong band-edge peak with little deep-level luminescence.

  10. Overview of chemical vapor infiltration

    Energy Technology Data Exchange (ETDEWEB)

    Besmann, T.M.; Stinton, D.P.; Lowden, R.A.

    1993-06-01

    Chemical vapor infiltration (CVI) is developing into a commercially important method for the fabrication of continuous filament ceramic composites. Current efforts are focused on the development of an improved understanding of the various processes in CVI and its modeling. New approaches to CVI are being explored, including pressure pulse infiltration and microwave heating. Material development is also proceeding with emphasis on improving the oxidation resistance of the interfacial layer between the fiber and matrix. This paper briefly reviews these subjects, indicating the current state of the science and technology.

  11. Microwave-assisted catalytic fast pyrolysis of biomass for bio-oil production using chemical vapor deposition modified HZSM-5 catalyst.

    Science.gov (United States)

    Zhang, Bo; Zhong, Zhaoping; Chen, Paul; Ruan, Roger

    2015-12-01

    Chemical vapor deposition with tetra-ethyl-orthosilicate as the modifier was applied to deposit the external acid sites of HZSM-5, and the modified HZSM-5 samples were used for the microwave-assisted catalytic fast pyrolysis (MACFP) of biomass for bio-oil production. The experimental results showed that the external acid sites of HZSM-5 decreased significantly when SiO2 deposited amount increased from 0% to 5.9%. For product distribution, the coke yield decreased, the oil fraction yield decreased at first and then increased, and the yields of water and gas first increased and then decreased over the range of SiO2 deposited amount studied. For chemical compositions in oil fraction, the relative contents of aliphatic hydrocarbons, aromatic hydrocarbons and oxygen-containing aromatic compounds first increased to maximum values and then decreased, while the relative content of oxygen-containing aliphatic compounds first decreased and then increased with increasing SiO2 deposited amount. Copyright © 2015 Elsevier Ltd. All rights reserved.

  12. Effects of intermittent atomization on the properties of Al-doped ZnO thin films deposited by aerosol-assisted chemical vapor deposition

    Energy Technology Data Exchange (ETDEWEB)

    Liu, Linjie; Wang, Lixin [Hebei Key Laboratory of Applied Chemistry, Yanshan University, Qinhuangdao 066004 (China); Qin, Xiujuan, E-mail: qinxj@ysu.edu.cn [Hebei Key Laboratory of Applied Chemistry, Yanshan University, Qinhuangdao 066004 (China); Cui, Li [Hebei Key Laboratory of Applied Chemistry, Yanshan University, Qinhuangdao 066004 (China); Shao, Guangjie [Hebei Key Laboratory of Applied Chemistry, Yanshan University, Qinhuangdao 066004 (China); State Key Laboratory of Metastable Materials Science and Technology, Yanshan University, Qinhuangdao 066004 (China)

    2016-04-30

    Al-doped ZnO (AZO) thin films were prepared on glass substrates with different atomization interval times by aerosol-assisted chemical vapor deposition method. The structure, morphology, and optical and electrical properties were investigated by X-ray diffractometer, atomic force microscope, UV-vis double beam spectrophotometer and 4 point probe method. ZnO thin films exhibited strong growth orientation along the (002) plane and the crystalline was affected by the atomization interval time. All the films had high transmittance and the films with interval times of 2 min and 4 min had good haze values for the transparent conducting oxide silicon solar cell applications. The AZO thin film had the best optical and electrical properties when the atomization interval time was 4 min. This is very important for the optoelectronic device applications. The surface morphology of AZO films depended on the atomization interval time. - Highlights: • Intermittent atomization is proved to be an effective measure. • Atomization interval time has an important influence on the crystallinity of films. • The surface morphology of ZnO films depends on atomization interval time. • Different hazes can be obtained by changing the atomization interval time.

  13. Enhanced Photoluminescence and Raman Properties of Al-Doped ZnO Nanostructures Prepared Using Thermal Chemical Vapor Deposition of Methanol Assisted with Heated Brass

    OpenAIRE

    Tamil Many K Thandavan; Siti Meriam Abdul Gani; Chiow San Wong; Roslan Md Nor

    2015-01-01

    Vapor phase transport (VPT) assisted by mixture of methanol and acetone via thermal evaporation of brass (CuZn) was used to prepare un-doped and Al-doped zinc oxide (ZnO) nanostructures (NSs). The structure and morphology were characterized by field emission scanning electron microscopy (FESEM) and x-ray diffraction (XRD). Photoluminescence (PL) properties of un-doped and Al-doped ZnO showed significant changes in the optical properties providing evidence for several types of defects such as ...

  14. Single and multi-layered core-shell structures based on ZnO nanorods obtained by aerosol assisted chemical vapor deposition

    Energy Technology Data Exchange (ETDEWEB)

    Sáenz-Trevizo, A.; Amézaga-Madrid, P.; Pizá-Ruiz, P.; Antúnez-Flores, W.; Ornelas-Gutiérrez, C.; Miki-Yoshida, M., E-mail: mario.miki@cimav.edu.mx

    2015-07-15

    Core–shell nanorod structures were prepared by a sequential synthesis using an aerosol assisted chemical vapor deposition technique. Several samples consisting of ZnO nanorods were initially grown over TiO{sub 2} film-coated borosilicate glass substrates, following the synthesis conditions reported elsewhere. Later on, a uniform layer consisting of individual Al, Ni, Ti or Fe oxides was grown onto ZnO nanorod samples forming the so-called single MO{sub x}/ZnO nanorod core–shell structures, where MO{sub x} was the metal oxide shell. Additionally, a three-layer core–shell sample was developed by growing Fe, Ti and Fe oxides alternately, onto the ZnO nanorods. The microstructure of the core–shell materials was characterized by grazing incidence X-ray diffraction, scanning and transmission electron microscopy. Energy dispersive X-ray spectroscopy was employed to corroborate the formation of different metal oxides. X-ray diffraction outcomes for single core–shell structures showed solely the presence of ZnO as wurtzite and TiO{sub 2} as anatase. For the multi-layered shell sample, the existence of Fe{sub 2}O{sub 3} as hematite was also detected. Morphological observations suggested the existence of an outer material grown onto the nanorods and further microstructural analysis by HR-STEM confirmed the development of core–shell structures in all cases. These studies also showed that the individual Al, Fe, Ni and Ti oxide layers are amorphous; an observation that matched with X-ray diffraction analysis where no apparent extra oxides were detected. For the multi-layered sample, the development of a shell consisting of three different oxide layers onto the nanorods was found. Overall results showed that no alteration in the primary ZnO core was produced during the growth of the shells, indicating that the deposition technique used herein was and it is suitable for the synthesis of homogeneous and complex nanomaterials high in quality and purity. In addition

  15. Automated semiconductor vacuum chemical vapor deposition facility

    Science.gov (United States)

    1982-01-01

    A semiconductor vacuum chemical vapor deposition facility (totally automatic) was developed. Wafers arrived on an air track, automatically loaded into a furnace tube, processed, returned to the track, and sent on to the next operation. The entire process was controlled by a computer.

  16. Chemical vapor infiltration process modeling and optimization

    Energy Technology Data Exchange (ETDEWEB)

    Besmann, T.M.; Stinton, D.P. [Oak Ridge National Lab., TN (United States); Matlin, W.M. [Tennessee Univ., Knoxville, TN (United States). Dept. of Materials Science and Engineering

    1995-12-31

    Chemical vapor infiltration is a unique method for preparing continuous fiber ceramic composites that spares the strong but relatively fragile fibers from damaging thermal, mechanical, and chemical degradation. The process is relatively complex and modeling requires detailed phenomenological knowledge of the chemical kinetics and mass and heat transport. An overview of some of the current understanding and modeling of CVI and examples of efforts to optimize the processes is given. Finally, recent efforts to scale-up the process to produce tubular forms are described.

  17. Enhanced photoluminescence and Raman properties of Al-Doped ZnO nanostructures prepared using thermal chemical vapor deposition of methanol assisted with heated brass.

    Directory of Open Access Journals (Sweden)

    Tamil Many K Thandavan

    Full Text Available Vapor phase transport (VPT assisted by mixture of methanol and acetone via thermal evaporation of brass (CuZn was used to prepare un-doped and Al-doped zinc oxide (ZnO nanostructures (NSs. The structure and morphology were characterized by field emission scanning electron microscopy (FESEM and x-ray diffraction (XRD. Photoluminescence (PL properties of un-doped and Al-doped ZnO showed significant changes in the optical properties providing evidence for several types of defects such as zinc interstitials (Zni, oxygen interstitials (Oi, zinc vacancy (Vzn, singly charged zinc vacancy (VZn-, oxygen vacancy (Vo, singly charged oxygen vacancy (Vo+ and oxygen anti-site defects (OZn in the grown NSs. The Al-doped ZnO NSs have exhibited shifted PL peaks at near band edge (NBE and red luminescence compared to the un-doped ZnO. The Raman scattering results provided evidence of Al doping into the ZnO NSs due to peak shift from 145 cm-1 to an anomalous peak at 138 cm-1. Presence of enhanced Raman signal at around 274 and 743 cm-1 further confirmed Al in ZnO NSs. The enhanced D and G band in all Al-doped ZnO NSs shows possible functionalization and doping process in ZnO NSs.

  18. Enhanced photoluminescence and Raman properties of Al-Doped ZnO nanostructures prepared using thermal chemical vapor deposition of methanol assisted with heated brass.

    Science.gov (United States)

    Thandavan, Tamil Many K; Gani, Siti Meriam Abdul; San Wong, Chiow; Md Nor, Roslan

    2015-01-01

    Vapor phase transport (VPT) assisted by mixture of methanol and acetone via thermal evaporation of brass (CuZn) was used to prepare un-doped and Al-doped zinc oxide (ZnO) nanostructures (NSs). The structure and morphology were characterized by field emission scanning electron microscopy (FESEM) and x-ray diffraction (XRD). Photoluminescence (PL) properties of un-doped and Al-doped ZnO showed significant changes in the optical properties providing evidence for several types of defects such as zinc interstitials (Zni), oxygen interstitials (Oi), zinc vacancy (Vzn), singly charged zinc vacancy (VZn-), oxygen vacancy (Vo), singly charged oxygen vacancy (Vo+) and oxygen anti-site defects (OZn) in the grown NSs. The Al-doped ZnO NSs have exhibited shifted PL peaks at near band edge (NBE) and red luminescence compared to the un-doped ZnO. The Raman scattering results provided evidence of Al doping into the ZnO NSs due to peak shift from 145 cm-1 to an anomalous peak at 138 cm-1. Presence of enhanced Raman signal at around 274 and 743 cm-1 further confirmed Al in ZnO NSs. The enhanced D and G band in all Al-doped ZnO NSs shows possible functionalization and doping process in ZnO NSs.

  19. Chemically Assisted Photocatalytic Oxidation System

    Science.gov (United States)

    Andino, Jean; Wu, Chang-Yu; Mazyck, David; Teixeira, Arthur A.

    2009-01-01

    The chemically assisted photocatalytic oxidation system (CAPOS) has been proposed for destroying microorganisms and organic chemicals that may be suspended in the air or present on surfaces of an air-handling system that ventilates an indoor environment. The CAPOS would comprise an upstream and a downstream stage that would implement a tandem combination of two partly redundant treatments. In the upstream stage, the air stream and, optionally, surfaces of the air-handling system would be treated with ozone, which would be generated from oxygen in the air by means of an electrical discharge or ultraviolet light. In the second stage, the air laden with ozone and oxidation products from the first stage would be made to flow in contact with a silica-titania photocatalyst exposed to ultraviolet light in the presence of water vapor. Hydroxyl radicals generated by the photocatalytic action would react with both carbon containing chemicals and microorganisms to eventually produce water and carbon dioxide, and ozone from the first stage would be photocatalytically degraded to O2. The net products of the two-stage treatment would be H2O, CO2, and O2.

  20. Making Ceramic Fibers By Chemical Vapor

    Science.gov (United States)

    Revankar, Vithal V. S.; Hlavacek, Vladimir

    1994-01-01

    Research and development of fabrication techniques for chemical vapor deposition (CVD) of ceramic fibers presented in two reports. Fibers of SiC, TiB2, TiC, B4C, and CrB2 intended for use as reinforcements in metal-matrix composite materials. CVD offers important advantages over other processes: fibers purer and stronger and processed at temperatures below melting points of constituent materials.

  1. Chemical vapor infiltration in single fiber bundles

    Energy Technology Data Exchange (ETDEWEB)

    Devlin, D.J.; Barbero, R.S.; Currier, R.P.

    1990-01-01

    Chemical vapor infiltration (CVI) in single fiber bundles is studied under isothermal conditions. Understanding infiltration dynamics in single bundles is essential to process design and modeling efforts. Deposition of pyrolytic carbon in carbon-fiber bundles is chosen as the experimental system, with densification data obtained from thermogravimetric analysis. Data are then compared to predictions from a recently proposed CVI model for fiber bundle densification. 10 refs., 5 figs., 1 tab.

  2. Fabrication of ferroelectric SrBi{sub 2}Ta{sub 2}O{sub 9} capacitor films using plasma-assisted metalorganic chemical vapor deposition and their electrical properties

    Energy Technology Data Exchange (ETDEWEB)

    Moon, B. K.; Hironaka, K.; Isobe, C.; Hishikawa, S.

    2001-06-01

    The fabrication of SrBi{sub 2}Ta{sub 2}O{sub 9} (SBT) films using plasma-assisted metalorganic chemical vapor deposition (P-MOCVD) has been investigated. Optimizing the process conditions under plasma environment, amorphous SBT films were successfully deposited at a substrate temperature below 300{degree}C, suggesting that the P-MOCVD process effectively utilizes plasma energy to promote the reaction and decomposition of metal organic source molecules. The amorphous SBT films were crystallized to the bilayered perovskite SBT films by a postannealing at 725{degree}C. Thin SBT capacitors fabricated using P-MOCVD showed a good step coverage and the excellent ferroelectric properties including endurance. Low voltage operation below 1.5 V was successfully achieved using a 75 nm SBT capacitor, in which the signal level derived from the hysteresis curve suggests the feasibility of application to a 64 Mbit ferroelectric random access memories. {copyright} 2001 American Institute of Physics.

  3. Chemical vapor deposition of group IIIB metals

    Science.gov (United States)

    Erbil, A.

    1989-11-21

    Coatings of Group IIIB metals and compounds thereof are formed by chemical vapor deposition, in which a heat decomposable organometallic compound of the formula given in the patent where M is a Group IIIB metal, such as lanthanum or yttrium and R is a lower alkyl or alkenyl radical containing from 2 to about 6 carbon atoms, with a heated substrate which is above the decomposition temperature of the organometallic compound. The pure metal is obtained when the compound of the formula 1 is the sole heat decomposable compound present and deposition is carried out under nonoxidizing conditions. Intermetallic compounds such as lanthanum telluride can be deposited from a lanthanum compound of formula 1 and a heat decomposable tellurium compound under nonoxidizing conditions.

  4. The Influence of Chemical Composition on LNG Pool Vaporization

    OpenAIRE

    Yu Zhidong

    2017-01-01

    A model is used to examine the influence of chemical composition on the vaporization rate of LNG during spreading. Calculations have been performed whereby the vaporization rate of the LNG mixtures has been compared to the vaporization of pure methane under the initial conditions. The detailed results indicate that the vaporization rate LNG mixture is different to that of pure methane. LNG as the liquid mixture gets rich in ethane and isobaric latent heat increases rapidly, leading to the rat...

  5. Chemical agent simulant release from clothing following vapor exposure.

    Science.gov (United States)

    Feldman, Robert J

    2010-02-01

    Most ambulatory victims of a terrorist chemical attack will have exposure to vapor only. The study objective was to measure the duration of chemical vapor release from various types of clothing. A chemical agent was simulated using methyl salicylate (MeS), which has similar physical properties to sulfur mustard and was the agent used in the U.S. Army's Man-In-Simulant Test (MIST). Vapor concentration was measured with a Smiths Detection Advanced Portable Detector (APD)-2000 unit. The clothing items were exposed to vapor for 1 hour in a sealed cabinet; vapor concentration was measured at the start and end of each exposure. Clothing was then removed and assessed every 5 minutes with the APD-2000, using a uniform sweep pattern, until readings remained 0. Concentration and duration of vapor release from clothing varied with clothing composition and construction. Lightweight cotton shirts and jeans had the least trapped vapor; down outerwear, the most. Vapor concentration near the clothing often increased for several minutes after the clothing was removed from the contaminated environment. Compression of thick outerwear released additional vapor. Mean times to reach 0 ranged from 7 minutes for jeans to 42 minutes for down jackets. This simulation model of chemical vapor release demonstrates persistent presence of simulant vapor over time. This implies that chemical vapor may be released from the victims' clothing after they are evacuated from the site of exposure, resulting in additional exposure of victims and emergency responders. Insulated outerwear can release additional vapor when handled. If a patient has just moved to a vapor screening point, immediate assessment before additional vapor can be released from the clothing can lead to a false-negative assessment of contamination.

  6. Chemical vapor deposition coating for micromachines

    Energy Technology Data Exchange (ETDEWEB)

    MANI,SEETHAMBAL S.; FLEMING,JAMES G.; SNIEGOWSKI,JEFFRY J.; DE BOER,MAARTEN P.; IRWIN,LAWRENCE W.; WALRAVEN,JEREMY A.; TANNER,DANELLE M.; DUGGER,MICHAEL T.

    2000-04-21

    Two major problems associated with Si-based MEMS devices are stiction and wear. Surface modifications are needed to reduce both adhesion and friction in micromechanical structures to solve these problems. In this paper, the authors will present a process used to selectively coat MEMS devices with tungsten using a CVD (Chemical Vapor Deposition) process. The selective W deposition process results in a very conformal coating and can potentially solve both stiction and wear problems confronting MEMS processing. The selective deposition of tungsten is accomplished through silicon reduction of WF{sub 6}, which results in a self-limiting reaction. The selective deposition of W only on polysilicon surfaces prevents electrical shorts. Further, the self-limiting nature of this selective W deposition process ensures the consistency necessary for process control. Selective tungsten is deposited after the removal of the sacrificial oxides to minimize process integration problems. This tungsten coating adheres well and is hard and conducting, requirements for device performance. Furthermore, since the deposited tungsten infiltrates under adhered silicon parts and the volume of W deposited is less than the amount of Si consumed, it appears to be possible to release stuck parts that are contacted over small areas such as dimples. Results from tungsten deposition on MEMS structures with dimples will be presented. The effect of wet and vapor phase cleanings prior to the deposition will be discussed along with other process details. The W coating improved wear by orders of magnitude compared to uncoated parts. Tungsten CVD is used in the integrated-circuit industry, which makes this approach manufacturable.

  7. High-sensitivity matrix-assisted laser desorption/ionization Fourier transform mass spectrometry analyses of small carbohydrates and amino acids using oxidized carbon nanotubes prepared by chemical vapor deposition as matrix.

    Science.gov (United States)

    Wang, Cui-hong; Li, Jian; Yao, Sheng-jun; Guo, Yin-long; Xia, Xing-hua

    2007-12-05

    In matrix-assisted laser desorption/ionization (MALDI) Fourier transform mass spectrometry (FTMS) analyses of small oligosaccharides and amino acids, high sensitivities for oligosaccharides (10 fmol) were obtained by introducing oxidized carbon nanotubes (CNTs) with short and open-end structure as valuable matrix. The CNTs were deposited in porous anodic alumina (PAA) templates by chemical vapor deposition. Transmission electron microscopy (TEM) images show that those CNTs include low levels of amorphous carbon. Thus, the background interference signals generally caused by amorphous carbon powder in CNTs can be reduced effectively. Experiments also confirmed that the FTMS signal intensity of CNTs prepared in PAA template is much lower than that of commercial multi-wall carbon nanotubes (MCNTs). Moreover, the purified process for CNTs with mixed acid (H2SO4 and HNO3) also contributed to the minimization of background. Intense signals corresponding to alkali cation adduct of neutral carbohydrates and amino acids have been acquired. In addition, reliable quantitative analyses for urine and corn root were also achieved successfully. The present work will open a new way to the application of oxidized CNTs as an effective matrix in MALDI MS research.

  8. Chemical vapor deposited fiber coatings and chemical vapor infiltrated ceramic matrix composites

    Energy Technology Data Exchange (ETDEWEB)

    Kmetz, M.A.

    1992-01-01

    Conventional Chemical Vapor Deposition (CVD) and Organometallic Chemical Vapor Deposition (MOCVD) were employed to deposit a series of interfacial coatings on SiC and carbon yarn. Molybdenum, tungsten and chromium hexacarbonyls were utilized as precursors in a low temperature (350[degrees]C) MOCVD process to coat SiC yarn with Mo, W and Cr oxycarbides. Annealing studies performed on the MoOC and WOC coated SiC yarns in N[sub 2] to 1,000[degrees]C establish that further decomposition of the oxycarbides occurred, culminating in the formation of the metals. These metals were then found to react with Si to form Mo and W disilicide coatings. In the Cr system, heating in N[sub 2] above 800[degrees]C resulted in the formation of a mixture of carbides and oxides. Convention CVD was also employed to coat SiC and carbon yarn with C, Bn and a new interface designated BC (a carbon-boron alloy). The coated tows were then infiltrated with SiC, TiO[sub 2], SiO[sub 2] and B[sub 4]C by a chemical vapor infiltration process. The B-C coatings were found to provide advantageous interfacial properties over carbon and BN coatings in several different composite systems. The effectiveness of these different coatings to act as a chemically inert barrier layer and their relationship to the degree of interfacial debonding on the mechanical properties of the composites were examined. The effects of thermal stability and strength of the coated fibers and composites were also determined for several difference atmospheres. In addition, a new method for determining the tensile strength of the as-received and coated yarns was also developed. The coated fibers and composites were further characterized by AES, SEM, XPS, IR and X-ray diffraction analysis.

  9. Characterization of Metalorganic Chemical Vapor Deposition

    Science.gov (United States)

    Jesser, W. A.

    1998-01-01

    A series of experimental and numerical investigations to develop a more complete understanding of the reactive fluid dynamics of chemical vapor deposition were conducted. In the experimental phases of the effort, a horizontal CVD reactor configuration was used for the growth of InP at UVA and for laser velocimetry measurements of the flow fields in the reactor at LaRC. This horizontal reactor configuration was developed for the growth of III-V semiconductors and has been used by our research group in the past to study the deposition of both GaAs and InP. While the ultimate resolution of many of the heat and mass transport issues will require access to a reduced-gravity environment, the series of groundbased research makes direct contributions to this area while attempting to answer the design questions for future experiments of how low must gravity be reduced and for how long must this gravity level be maintained to make the necessary measurements. It is hoped that the terrestrial experiments will be useful for the design of future microgravity experiments which likely will be designed to employ a core set of measurements for applications in the microgravity environment such as HOLOC, the Fluid Physics/Dynamics Facility, or the Schlieren photography, the Laser Imaging Velocimetry and the Laser Doppler Velocimetry instruments under development for the Advanced Fluids Experiment Module.

  10. Chemical vapor deposition growth of bilayer graphene in between molybdenum disulfide sheets

    NARCIS (Netherlands)

    Kwieciñski, Wojciech; Sotthewes, Kai; Poelsema, Bene; Zandvliet, Harold J.W.; Bampoulis, Pantelis

    2017-01-01

    Direct growth of flat micrometer-sized bilayer graphene islands in between molybdenum disulfide sheets is achieved by chemical vapor deposition of ethylene at about 800 °C. The temperature assisted decomposition of ethylene takes place mainly at molybdenum disulfide step edges. The carbon atoms

  11. Mechanical properties of chemical vapor deposited diamond

    Science.gov (United States)

    Kant, Avinash

    The hardness, elastic modulus, subcritical crack growth and fracture toughness of chemical vapor deposited (CVD) polycrystalline diamond films have been investigated on thick (˜100 to 300 mum) free-standing films with regard to the composition, microstructure, failure mechanisms and measurement techniques. The rationale for this study was the uncertainty in measuring these properties in previous research and the variability in the composition and microstructure of the material, which may affect these properties. Two predominant micro-hardness measurement techniques, namely Vickers and Knoop indentation, were employed. Existing Young's modulus measurement techniques such as dynamic resonance and nano-indentation were reviewed for modulus measurement on these films. The validity of indentation fracture toughness measurement for CVD diamond films using micro-hardness indentation has been established based on comparison with the conventional method of tensile testing of pre-notched compact-tension samples. The fracture toughness, Ksbc, of diamond was measured using indentation methods and for the first time by the tensile testing of pre-notched fracture-mechanics type compact-tension samples. Measured Ksbc values were found to be between 5 and 7 MPa-msp{1/2} by either method. Studies on subcritical crack growth (i.e., at stress intensities less than Ksbc) indicated that CVD diamond is essentially immune to stress-corrosion cracking under sustained loads in room air, water and acid environments. Extensive studies of the microstructure and mechanisms of failure were conducted. A commonly known toughening mechanism for ceramics by weakening the grain boundary in order to promote intergranular failure and grain bridging, has been implemented to improve the toughness of CVD diamond films. Several films with nominally the same thickness but small differences in their non-diamond content were studied and a significant variation in the toughness measurements was observed

  12. Advances in the chemical vapor deposition (CVD) of Tantalum

    DEFF Research Database (Denmark)

    Mugabi, James Atwoki; Eriksen, Søren; Christensen, Erik

    2014-01-01

    The chemical stability of tantalum in hot acidic media has made it a key material in the protection of industrial equipment from corrosion under such conditions. The Chemical Vapor Deposition of tantalum to achieve such thin corrosion resistant coatings is one of the most widely mentioned examples...

  13. Vaporization of a mixed precursors in chemical vapor deposition for YBCO films

    Science.gov (United States)

    Zhou, Gang; Meng, Guangyao; Schneider, Roger L.; Sarma, Bimal K.; Levy, Moises

    1995-01-01

    Single phase YBa2Cu3O7-delta thin films with T(c) values around 90 K are readily obtained by using a single source chemical vapor deposition technique with a normal precursor mass transport. The quality of the films is controlled by adjusting the carrier gas flow rate and the precursor feed rate.

  14. SAW Sensors for Chemical Vapors and Gases

    Science.gov (United States)

    Devkota, Jagannath; Ohodnicki, Paul R.; Greve, David W.

    2017-01-01

    Surface acoustic wave (SAW) technology provides a sensitive platform for sensing chemicals in gaseous and fluidic states with the inherent advantages of passive and wireless operation. In this review, we provide a general overview on the fundamental aspects and some major advances of Rayleigh wave-based SAW sensors in sensing chemicals in a gaseous phase. In particular, we review the progress in general understanding of the SAW chemical sensing mechanism, optimization of the sensor characteristics, and the development of the sensors operational at different conditions. Based on previous publications, we suggest some appropriate sensing approaches for particular applications and identify new opportunities and needs for additional research in this area moving into the future. PMID:28397760

  15. Chemical Vapor Deposition of Aluminum Oxide Thin Films

    Science.gov (United States)

    Vohs, Jason K.; Bentz, Amy; Eleamos, Krystal; Poole, John; Fahlman, Bradley D.

    2010-01-01

    Chemical vapor deposition (CVD) is a process routinely used to produce thin films of materials via decomposition of volatile precursor molecules. Unfortunately, the equipment required for a conventional CVD experiment is not practical or affordable for many undergraduate chemistry laboratories, especially at smaller institutions. In an effort to…

  16. Chemical Vapor Deposition of Turbine Thermal Barrier Coatings

    Science.gov (United States)

    Haven, Victor E.

    1999-01-01

    Ceramic thermal barrier coatings extend the operating temperature range of actively cooled gas turbine components, therefore increasing thermal efficiency. Performance and lifetime of existing ceram ic coatings are limited by spallation during heating and cooling cycles. Spallation of the ceramic is a function of its microstructure, which is determined by the deposition method. This research is investigating metalorganic chemical vapor deposition (MOCVD) of yttria stabilized zirconia to improve performance and reduce costs relative to electron beam physical vapor deposition. Coatings are deposited in an induction-heated, low-pressure reactor at 10 microns per hour. The coating's composition, structure, and response to the turbine environment will be characterized.

  17. Student Assistance Guide for Chemical Dependency.

    Science.gov (United States)

    Saint Vincent Medical Center, Toledo, OH. Tennyson Center.

    This document presents practical suggestions for student assistance workers who might work with chemically dependent adolescents. It illustrates the stages of chemical dependency, discusses the progression of dependency in adolescents, and provides guidelines for identifying a chemically dependent adolescent. Since chemically dependent persons…

  18. Combustion chemical vapor desposited coatings for thermal barrier coating systems

    Energy Technology Data Exchange (ETDEWEB)

    Hampikian, J.M.; Carter, W.B. [Georgia Institute of Technology, Atlanta, GA (United States)

    1995-10-01

    The new deposition process, combustion chemical vapor deposition, shows a great deal of promise in the area of thermal barrier coating systems. This technique produces dense, adherent coatings, and does not require a reaction chamber. Coatings can therefore be applied in the open atmosphere. The process is potentially suitable for producing high quality CVD coatings for use as interlayers between the bond coat and thermal barrier coating, and/or as overlayers, on top of thermal barrier coatings.

  19. Epitaxial Growth of Silicon Carbide by Chemical Vapor Deposition

    Science.gov (United States)

    Bhat, Ishwara B.

    The properties of silicon carbide materials are first reviewed, with special emphasis on properties related to power device applications. Epitaxial growth methods for SiC are then discussed with emphasis on recent results for epitaxial growth by the hot-wall chemical vapor deposition method. The growth mechanism for maintaining the polytype, namely step-controlled epitaxy, is discussed. Also described is the selective epitaxial growth carried out on SiC at the author's laboratory, including some unpublished work.

  20. Research on chemical vapor deposition processes for advanced ceramic coatings

    Science.gov (United States)

    Rosner, Daniel E.

    1993-01-01

    Our interdisciplinary background and fundamentally-oriented studies of the laws governing multi-component chemical vapor deposition (VD), particle deposition (PD), and their interactions, put the Yale University HTCRE Laboratory in a unique position to significantly advance the 'state-of-the-art' of chemical vapor deposition (CVD) R&D. With NASA-Lewis RC financial support, we initiated a program in March of 1988 that has led to the advances described in this report (Section 2) in predicting chemical vapor transport in high temperature systems relevant to the fabrication of refractory ceramic coatings for turbine engine components. This Final Report covers our principal results and activities for the total NASA grant of $190,000. over the 4.67 year period: 1 March 1988-1 November 1992. Since our methods and the technical details are contained in the publications listed (9 Abstracts are given as Appendices) our emphasis here is on broad conclusions/implications and administrative data, including personnel, talks, interactions with industry, and some known applications of our work.

  1. Modeling of chemical vapor deposition. I. General considerations

    Science.gov (United States)

    Korec, J.; Heyen, M.

    1982-12-01

    In this study a general analysis of chemical vapor deposition (CVD) processes carried out in open flow systems is presented. In this treatment the successive process steps, namely mass transport in the gas phase, adsorption, chemical reaction and surface diffusion are included. The proposed approach allows computation of the activity of the material to be deposited; this quantity is determined by a balance between the rates of gas phase diffusion and of surface processes. An expression is presented relating the activity near the interface to the growth rate of the deposited layer. It is shown that the same approach can be used for etching conditions.

  2. Plasma and Ion Assistance in Physical Vapor Deposition: AHistorical Perspective

    Energy Technology Data Exchange (ETDEWEB)

    Anders, Andre

    2007-02-28

    Deposition of films using plasma or plasma-assist can betraced back surprisingly far, namely to the 18th century for arcs and tothe 19th century for sputtering. However, only since the 1960s thecoatings community considered other processes than evaporation for largescale commercial use. Ion Plating was perhaps the first importantprocess, introducing vapor ionization and substrate bias to generate abeam of ions arriving on the surface of the growing film. Ratherindependently, cathodic arc deposition was established as an energeticcondensation process, first in the former Soviet Union in the 1970s, andin the 1980s in the Western Hemisphere. About a dozen various ion-basedcoating technologies evolved in the last decades, all characterized byspecific plasma or ion generation processes. Gridded and gridless ionsources were taken from space propulsion and applied to thin filmdeposition. Modeling and simulation have helped to make plasma and ionseffects to be reasonably well understood. Yet--due to the complex, oftennon-linear and non-equilibrium nature of plasma and surfaceinteractions--there is still a place for the experience plasma"sourcerer."

  3. Advances in modeling of chemical vapor infiltration for tube fabrication

    Energy Technology Data Exchange (ETDEWEB)

    Starr, T.L. [Georgia Inst. of Tech., Atlanta, GA (United States). School of Materials Science and Technology

    1998-04-01

    The forced flow/thermal gradient chemical vapor infiltration process (FCVI) can be used for fabrication of tube-shaped components of ceramic matrix composites. Recent experimental work at Oak Ridge National Laboratory (ORNL) includes process and materials development studies using a small tube reactor. Use of FCVI for this geometry involves significant changes in fixturing as compared to disk-shaped preforms previously fabricated. The authors have used their computer model of the CVI process to simulate tube densification and to identify process modifications that will decrease processing time. This report presents recent model developments and applications.

  4. Handbook of chemical vapor deposition principles, technology and applications

    CERN Document Server

    Pierson, Hugh O

    1999-01-01

    Turn to this new second edition for an understanding of the latest advances in the chemical vapor deposition (CVD) process. CVD technology has recently grown at a rapid rate, and the number and scope of its applications and their impact on the market have increased considerably. The market is now estimated to be at least double that of a mere seven years ago when the first edition of this book was published. The second edition is an update with a considerably expanded and revised scope. Plasma CVD and metallo-organic CVD are two major factors in this rapid growth. Readers will find the latest

  5. Fabrication of fiber-reinforced composites by chemical vapor infiltration

    Energy Technology Data Exchange (ETDEWEB)

    Matlin, W.M. [Univ. of Tennessee, Knoxville, TN (United States); Stinton, D.P.; Besmann, T.M. [Oak Ridge National Lab., TN (United States)

    1995-08-01

    A two-step forced chemical vapor infiltration process was developed that reduced infiltration times for 4.45 cm dia. by 1.27 cm thick Nicalon{sup +} fiber preforms by two thirds while maintaining final densities near 90 %. In the first stage of the process, micro-voids within fiber bundles in the cloth were uniformly infiltrated throughout the preform. In the second stage, the deposition rate was increased to more rapidly fill the macro-voids between bundles within the cloth and between layers of cloth. By varying the thermal gradient across the preform uniform infiltration rates were maintained and high final densities achieved.

  6. Fabrication of fiber-reinforced composites by chemical vapor infiltration

    Energy Technology Data Exchange (ETDEWEB)

    Besmann, T.M.; McLaughlin, J.C. [Oak Ridge National Lab., TN (United States). Metals and Ceramics Div.; Probst, K.J.; Anderson, T.J. [Univ. of Florida, Gainesville, FL (United States). Dept. of Chemical Engineering; Starr, T.L. [Georgia Inst. of Tech., Atlanta, GA (United States). Dept. of Materials Science and Engineering

    1997-12-01

    Silicon carbide-based heat exchanger tubes are of interest to energy production and conversion systems due to their excellent high temperature properties. Fiber-reinforced SiC is of particular importance for these applications since it is substantially tougher than monolithic SiC, and therefore more damage and thermal shock tolerant. This paper reviews a program to develop a scaled-up system for the chemical vapor infiltration of tubular shapes of fiber-reinforced SiC. The efforts include producing a unique furnace design, extensive process and system modeling, and experimental efforts to demonstrate tube fabrication.

  7. Facile synthesis of graphene on single mode fiber via chemical vapor deposition

    Energy Technology Data Exchange (ETDEWEB)

    Zhang, C. [College of Physics and Electronics, Shandong Normal University, Jinan 250014 (China); Man, B.Y., E-mail: byman@sdnu.edu.cn [College of Physics and Electronics, Shandong Normal University, Jinan 250014 (China); Jiang, S.Z. [College of Physics and Electronics, Shandong Normal University, Jinan 250014 (China); State Key Lab of Crystal Materials Shandong University, Jinan 250100 (China); Yang, C.; Liu, M.; Chen, C.S.; Xu, S.C. [College of Physics and Electronics, Shandong Normal University, Jinan 250014 (China); Feng, D.J. [School of Information Science and Engineering, Shandong University, Jinan 250100 (China); Bi, D.; Liu, F.Y.; Qiu, H.W. [College of Physics and Electronics, Shandong Normal University, Jinan 250014 (China)

    2014-07-01

    Direct deposition of graphene film on the standard single mode fiber is offered using a Cu-vapor-assisted chemical vapor deposition system. The gas flow of H{sub 2} and Ar before the growth process plays a crucial role for the direct deposition of the graphene film and the layers of the graphene can be controlled by the growth time. With a large gas flow, Cu atoms are carried off with the gas flow and hard to deposit on the surface of the single mode fiber before the growth process. Consequently, uniform graphene film is obtained in this case. On the contrary, with a lower one, Cu atoms is facile to deposit on the surface of the single mode fiber and form nanodots acting as active catalytic sites for the growth of carbon nanotubes. This method presents us a promising transfer-free technique for fabrication of the photonic applications.

  8. Chemical etching of copper foils for single-layer graphene growth by chemical vapor deposition

    Science.gov (United States)

    Yoshihara, Naoki; Noda, Masaru

    2017-10-01

    Chemical etching on copper surface is essential as a pre-treatment for single-layer graphene growth by chemical vapor deposition (CVD). Here, we investigated the effect of chemical etching treatment on copper foils for single-layer graphene CVD growth. The chemical etching conditions, such as the type of chemical etchants and the treatment time, were found to strongly influence the graphene domain size. Moreover, a drastic change in the layer structure of graphene sheets, which was attributed to the surface morphology of the etched copper foil, was confirmed by graphene transmittance and Raman mapping measurements.

  9. Development and study of chemical vapor deposited tantalum base alloys

    Science.gov (United States)

    Meier, G. H.; Bryant, W. A.

    1976-01-01

    A technique for the chemical vapor deposition of alloys was developed. The process, termed pulsing, involves the periodic injection of reactant gases into a previously-evacuated reaction chamber where they blanket the substrate almost instantaneously. Formation of alternating layers of the alloy components and subsequent homogenization allows the formation of an alloy of uniform composition with the composition being determined by the duration and relative numbers of the various cycles. The technique has been utilized to produce dense alloys of uniform thickness and composition (Ta- 10 wt % W) by depositing alternating layers of Ta and W by the hydrogen reduction of TaCl5 and WCl6. A similar attempt to deposit a Ta - 8 wt % W - 2 wt% Hf alloy was unsuccessful because of the difficulty in reducing HfCl4 at temperatures below those at which gas phase nucleation of Ta and W occurred.

  10. Immobilization of whole cells by chemical vapor deposition of silica.

    Science.gov (United States)

    Sizemore, Susan R; Nichols, Robert; Tatum, Randi; Atanassov, Plamen; Johnson, Glenn R; Luckarift, Heather R

    2013-01-01

    Effective entrapment of whole bacterial cells onto solid-phase materials can significantly improve bioprocessing and other biotechnology applications. Cell immobilization allows integration of biocatalysts in a manner that maintains long-term cell viability and typically enhances process output. A wide variety of functionalized materials have been explored for microbial cell immobilization, and specific advantages and limitations were identified. The method described here is a simple, versatile, and scalable one-step process for the chemical vapor deposition of silica to encapsulate and stabilize viable, whole bacterial cells. The immobilized bacterial population is prepared and captured at a predefined physiological state so as to affix bacteria with a selected metabolic or catalytic capability to compatible materials and surfaces. Immobilization of Shewanella oneidensis to carbon electrodes and immobilization of Acinetobacter venetianus to adsorbent mats are described as model systems.

  11. Structural evolution during chemical vapor deposition of diamond thin films

    Science.gov (United States)

    Morell, G.; Cancel, L. M.; Figueroa, O. L.; González, J. A.; Weiner, B. R.

    2000-11-01

    In situ phase-modulated ellipsometry was employed to monitor the nucleation and growth processes of diamond thin films fabricated by chemical vapor deposition. The effective extinction coefficient (k) at 1.96 eV was used as a basis for dividing the deposition process into intervals. The film growth was aborted at various k values yielding diamond film samples that represent snapshots of the growth process at different stages. Ex situ characterization of the films was performed using Raman spectroscopy, scanning electron microscopy, and x-ray diffraction. The results indicate that the diamond film deposition process consists of various stages in which the crystalline quality, the net compressive stress, and the relative amount of non-sp3 carbon follow different trends. A correlation between the effective k value measured in situ and the film microstructure characterized ex situ was established which enables the monitoring of the diamond film growth process in real time.

  12. Measurement of gas transport properties for chemical vapor infiltration

    Energy Technology Data Exchange (ETDEWEB)

    Starr, T.L.; Hablutzel, N. [Georgia Inst. of Tech., Atlanta, GA (United States). School of Materials Science and Engineering

    1996-12-01

    In the chemical vapor infiltration (CVI) process for fabricating ceramic matrix composites (CMCs), transport of gas phase reactant into the fiber preform is a critical step. The transport can be driven by pressure or by concentration. This report describes methods for measuring this for CVI preforms and partially infiltrated composites. Results are presented for Nicalon fiber cloth layup preforms and composites, Nextel fiber braid preforms and composites, and a Nicalon fiber 3-D weave composite. The results are consistent with a percolating network model for gas transport in CVI preforms and composites. This model predicts inherent variability in local pore characteristics and transport properties, and therefore, in local densification during processing; this may lead to production of gastight composites.

  13. Mass transport measurements and modeling for chemical vapor infiltration

    Energy Technology Data Exchange (ETDEWEB)

    Starr, T.L.; Chiang, D.Y.; Fiadzo, O.G.; Hablutzel, N. [Georgia Inst. of Tech., Atlanta, GA (United States). School of Materials Science and Engineering

    1997-12-01

    This project involves experimental and modeling investigation of densification behavior and mass transport in fiber preforms and partially densified composites, and application of these results to chemical vapor infiltration (CVI) process modeling. This supports work on-going at ORNL in process development for fabrication of ceramic matrix composite (CMC) tubes. Tube-shaped composite preforms are fabricated at ORNL with Nextel{trademark} 312 fiber (3M Corporation, St. Paul, MN) by placing and compressing several layers of braided sleeve on a tubular mandrel. In terms of fiber architecture these preforms are significantly different than those made previously with Nicalon{trademark} fiber (Nippon Carbon Corp., Tokyo, Japan) square weave cloth. The authors have made microstructure and permeability measurements on several of these preforms and a few partially densified composites so as to better understand their densification behavior during CVI.

  14. Chemical Vapor Deposition at High Pressure in a Microgravity Environment

    Science.gov (United States)

    McCall, Sonya; Bachmann, Klaus; LeSure, Stacie; Sukidi, Nkadi; Wang, Fuchao

    1999-01-01

    In this paper we present an evaluation of critical requirements of organometallic chemical vapor deposition (OMCVD) at elevated pressure for a channel flow reactor in a microgravity environment. The objective of using high pressure is to maintain single-phase surface composition for materials that have high thermal decomposition pressure at their optimum growth temperature. Access to microgravity is needed to maintain conditions of laminar flow, which is essential for process analysis. Based on ground based observations we present an optimized reactor design for OMCVD at high pressure and reduced gravity. Also, we discuss non-intrusive real-time optical monitoring of flow dynamics coupled to homogeneous gas phase reactions, transport and surface processes. While suborbital flights may suffice for studies of initial stages of heteroepitaxy experiments in space are essential for a complete evaluation of steady-state growth.

  15. Synthesis of mullite coatings by chemical vapor deposition

    Energy Technology Data Exchange (ETDEWEB)

    Mulpuri, R.P.; Auger, M.; Sarin, V.K. [Boston Univ., MA (United States)

    1996-08-01

    Formation of mullite on ceramic substrates via chemical vapor deposition was investigated. Mullite is a solid solution of Al{sub 2}O{sub 3} and SiO{sub 2} with a composition of 3Al{sub 2}O{sub 3}{circ}2SiO{sub 2}. Thermodynamic calculations performed on the AlCl{sub 3}-SiCl{sub 4}-CO{sub 2}-H{sub 2} system were used to construct equilibrium CVD phase diagrams. With the aid of these diagrams and consideration of kinetic rate limiting factors, initial process parameters were determined. Through process optimization, crystalline CVD mullite coatings have been successfully grown on SiC and Si{sub 3}N{sub 4} substrates. Results from the thermodynamic analysis, process optimization, and effect of various process parameters on deposition rate and coating morphology are discussed.

  16. Anisotropic hydrogen etching of chemical vapor deposited graphene.

    Science.gov (United States)

    Zhang, Yi; Li, Zhen; Kim, Pyojae; Zhang, Luyao; Zhou, Chongwu

    2012-01-24

    We report a simple, clean, and highly anisotropic hydrogen etching method for chemical vapor deposited (CVD) graphene catalyzed by the copper substrate. By exposing CVD graphene on copper foil to hydrogen flow around 800 °C, we observed that the initially continuous graphene can be etched to have many hexagonal openings. In addition, we found that the etching is temperature dependent. Compared to other temperatures (700, 900, and 1000 °C), etching of graphene at 800 °C is most efficient and anisotropic. Of the angles of graphene edges after etching, 80% are 120°, indicating the etching is highly anisotropic. No increase of the D band along the etched edges indicates that the crystallographic orientation of etching is in the zigzag direction. Furthermore, we observed that copper played an important role in catalyzing the etching reaction, as no etching was observed for graphene transferred to Si/SiO(2) under similar conditions. This highly anisotropic hydrogen etching technology may work as a simple and convenient way to determine graphene crystal orientation and grain size and may enable the etching of graphene into nanoribbons for electronic applications. © 2011 American Chemical Society

  17. Conversion Coatings for Aluminum Alloys by Chemical Vapor Deposition Mechanisms

    Science.gov (United States)

    Reye, John T.; McFadden, Lisa S.; Gatica, Jorge E.; Morales, Wilfredo

    2004-01-01

    With the rise of environmental awareness and the renewed importance of environmentally friendly processes, the United States Environmental Protection Agency has targeted surface pre-treatment processes based on chromates. Indeed, this process has been subject to regulations under the Clean Water Act as well as other environmental initiatives, and there is today a marked movement to phase the process out in the near future. Therefore, there is a clear need for new advances in coating technology that could provide practical options for replacing present industrial practices. Depending on the final application, such coatings might be required to be resistant to corrosion, act as chemically resistant coatings, or both. This research examined a chemical vapor deposition (CVD) mechanism to deposit uniform conversion coatings onto aluminum alloy substrates. Robust protocols based on solutions of aryl phosphate ester and multi-oxide conversion coating (submicron) films were successfully grown onto the aluminum alloy samples. These films were characterized by X-ray Photoelectron Spectroscopy (XPS). Preliminary results indicate the potential of this technology to replace aqueous-based chromate processes.

  18. Graphene-Based Chemical Vapor Sensors for Electronic Nose Applications

    Science.gov (United States)

    Nallon, Eric C.

    An electronic nose (e-nose) is a biologically inspired device designed to mimic the operation of the olfactory system. The e-nose utilizes a chemical sensor array consisting of broadly responsive vapor sensors, whose combined response produces a unique pattern for a given compound or mixture. The sensor array is inspired by the biological function of the receptor neurons found in the human olfactory system, which are inherently cross-reactive and respond to many different compounds. The use of an e-nose is an attractive approach to predict unknown odors and is used in many fields for quantitative and qualitative analysis. If properly designed, an e-nose has the potential to adapt to new odors it was not originally designed for through laboratory training and algorithm updates. This would eliminate the lengthy and costly R&D costs associated with materiel and product development. Although e-nose technology has been around for over two decades, much research is still being undertaken in order to find new and more diverse types of sensors. Graphene is a single-layer, 2D material comprised of carbon atoms arranged in a hexagonal lattice, with extraordinary electrical, mechanical, thermal and optical properties due to its 2D, sp2-bonded structure. Graphene has much potential as a chemical sensing material due to its 2D structure, which provides a surface entirely exposed to its surrounding environment. In this configuration, every carbon atom in graphene is a surface atom, providing the greatest possible surface area per unit volume, so that electron transport is highly sensitive to adsorbed molecular species. Graphene has gained much attention since its discovery in 2004, but has not been realized in many commercial electronics. It has the potential to be a revolutionary material for use in chemical sensors due to its excellent conductivity, large surface area, low noise, and versatile surface for functionalization. In this work, graphene is incorporated into a

  19. Modeling chemical vapor deposition of silicon dioxide in microreactors at atmospheric pressure

    NARCIS (Netherlands)

    Konakov, S.A.; Krzhizhanovskaya, V.V.

    2015-01-01

    We developed a multiphysics mathematical model for simulation of silicon dioxide Chemical Vapor Deposition (CVD) from tetraethyl orthosilicate (TEOS) and oxygen mixture in a microreactor at atmospheric pressure. Microfluidics is a promising technology with numerous applications in chemical synthesis

  20. Ultrafast deposition of silicon nitride and semiconductor silicon thin films by Hot Wire Chemical Vapor Deposition

    NARCIS (Netherlands)

    Schropp, R.E.I.; van der Werf, C.H.M.; Verlaan, V.; Rath, J.K.; Li, H. B. T.

    2009-01-01

    The technology of Hot Wire Chemical Vapor Deposition (HWCVD) or Catalytic Chemical Vapor Deposition (Cat-CVD) has made great progress during the last couple of years. This review discusses examples of significant progress. Specifically, silicon nitride deposition by HWCVD (HW-SiNx) is highlighted,

  1. Graphene by one-step chemical vapor deposition from ferrocene vapors: Properties and electrochemical evaluation

    Science.gov (United States)

    Pilatos, George; Perdikaki, Anna V.; Sapalidis, Andreas; Pappas, George S.; Giannakopoulou, Tatiana; Tsoutsou, Dimitra; Xenogiannopoulou, Evangelia; Boukos, Nikos; Dimoulas, Athanasios; Trapalis, Christos; Kanellopoulos, Nick K.; Karanikolos, Georgios N.

    2016-02-01

    Growth of few-layer graphene using ferrocene as precursor by chemical vapor deposition is reported. The growth did not involve any additional carbon or catalyst source or external hydrocarbon gases. Parametric investigation was performed using different conditions, namely, varying growth temperature from 600 to1000 °C, and growth duration from 5 min to 3 h, as well as using fast quenching or gradual cooling after the thermal treatment, in order to examine the effect on the quality of the produced graphene. The growth took place on silicon wafers and resulted, under optimal conditions, in formation of graphene with 2-3 layers and high graphitic quality, as evidenced by Raman spectroscopy, with characteristic full width at half maximum of the 2D band of 49.46 cm-1, and I2D/IG and ID/IG intensity ratios of 1.15 and 0.26, respectively. Atomic force microscopy and X-ray photoelectron spectroscopy were employed to further evaluate graphene characteristics and enlighten growth mechanism. Electrochemical evaluation of the developed material was performed using cyclic voltammetry, electrochemical impedance spectroscopy, and galvanostatic charge-discharge measurements.

  2. Chemical vapor deposition growth of two-dimensional heterojunctions

    Science.gov (United States)

    Cui, Yu; Li, Bo; Li, JingBo; Wei, ZhongMing

    2018-01-01

    The properties of two-dimensional (2D) layered materials with atom-smooth surface and special interlayer van der Waals coupling are different from those of traditional materials. Due to the absence of dangling bonds from the clean surface of 2D layered materials, the lattice mismatch influences slightly on the growth of 2D heterojunctions, thus providing a flexible design strategy. 2D heterojunctions have attracted extensive attention because of their excellent performance in optoelectronics, spintronics, and valleytronics. The transfer method was utilized for the fabrication of 2D heterojunctions during the early stage of fundamental research on these materials. This method, however, has limited practical applications. Therefore, chemical vapor deposition (CVD) method was recently developed and applied for the preparation of 2D heterojunctions. The CVD method is a naturally down-top growth strategy that yields 2D heterojunctions with sharp interfaces. Moreover, this method effectively reduces the introduction of contaminants to the fabricated heterojunctions. Nevertheless, the CVD-growth method is sensitive to variations in growth conditions. In this review article, we attempt to provide a comprehensive overview of the influence of growth conditions on the fabrication of 2D heterojunctions through the direct CVD method. We believe that elucidating the effects of growth conditions on the CVD method is necessary to help control and improve the efficiency of the large-scale fabrication of 2D heterojunctions for future applications in integrated circuits.

  3. Chemical vapor infiltration of TiB{sub 2} composites

    Energy Technology Data Exchange (ETDEWEB)

    Besmann, T.M.; Miller, J.H.; Cooley, K.C.; Lowden, R.A. [Oak Ridge National Lab., TN (United States); Starr, T.L. [Georgia Tech Research Inst., Atlanta, GA (United States)

    1993-01-01

    Efficiency of the Hall-Heroult electrolytic reduction of aluminum can be substantially improved by the use of a TiB{sub 2} cathode surface. The use of TiB{sub 2}, however, has been hampered by the brittle nature of the material and the grain-boundary attack of sintering-aid phases by molten aluminum. In the current work, TiB{sub 2} is toughened through the use of reinforcing fibers, with chemical vapor infiltration (CVI) used to produce pure TiB{sub 2}. It has been observed, however, that the formation of TiB{sub 2} from chloride precursors at fabrication temperatures below 900 to 1000{degrees}C alloys the retention of destructive levels of chlorine in the material. At higher fabrication temperatures and under appropriate infiltration conditions, as determined from the use of a process model, a TIB{sub 2}THORNEL P-25 fiber composite, 45 mm in diam and 6 mm thick, has been fabricated in 20 h. The material has been demonstrated to be stable in molten aluminum in short-duration tests.

  4. Chemical vapor infiltration of TiB[sub 2] composites

    Energy Technology Data Exchange (ETDEWEB)

    Besmann, T.M.; Miller, J.H.; Cooley, K.C.; Lowden, R.A. (Oak Ridge National Lab., TN (United States)); Starr, T.L. (Georgia Tech Research Inst., Atlanta, GA (United States))

    1993-01-01

    Efficiency of the Hall-Heroult electrolytic reduction of aluminum can be substantially improved by the use of a TiB[sub 2] cathode surface. The use of TiB[sub 2], however, has been hampered by the brittle nature of the material and the grain-boundary attack of sintering-aid phases by molten aluminum. In the current work, TiB[sub 2] is toughened through the use of reinforcing fibers, with chemical vapor infiltration (CVI) used to produce pure TiB[sub 2]. It has been observed, however, that the formation of TiB[sub 2] from chloride precursors at fabrication temperatures below 900 to 1000[degrees]C alloys the retention of destructive levels of chlorine in the material. At higher fabrication temperatures and under appropriate infiltration conditions, as determined from the use of a process model, a TIB[sub 2]THORNEL P-25 fiber composite, 45 mm in diam and 6 mm thick, has been fabricated in 20 h. The material has been demonstrated to be stable in molten aluminum in short-duration tests.

  5. Growth of graphene underlayers by chemical vapor deposition

    Directory of Open Access Journals (Sweden)

    Mopeli Fabiane

    2013-11-01

    Full Text Available We present a simple and very convincing approach to visualizing that subsequent layers of graphene grow between the existing monolayer graphene and the copper catalyst in chemical vapor deposition (CVD. Graphene samples were grown by CVD and then transferred onto glass substrates by the bubbling method in two ways, either direct-transfer (DT to yield poly (methyl methacrylate (PMMA/graphene/glass or (2 inverted transfer (IT to yield graphene/PMMA/glass. Field emission scanning electron microscopy (FE-SEM and atomic force microscopy (AFM were used to reveal surface features for both the DT and IT samples. The results from FE-SEM and AFM topographic analyses of the surfaces revealed the underlayer growth of subsequent layers. The subsequent layers in the IT samples are visualized as 3D structures, where the smaller graphene layers lie above the larger layers stacked in a concentric manner. The results support the formation of the so-called “inverted wedding cake” stacking in multilayer graphene growth.

  6. Growth of graphene underlayers by chemical vapor deposition

    Energy Technology Data Exchange (ETDEWEB)

    Fabiane, Mopeli; Khamlich, Saleh; Bello, Abdulhakeem; Dangbegnon, Julien; Momodu, Damilola; Manyala, Ncholu, E-mail: ncholu.manyala@up.ac.za [Department of Physics, Institute of Applied Materials, SARChI Chair in Carbon Technology and Materials, University of Pretoria, Pretoria 0028 (South Africa); Charlie Johnson, A. T. [Department of Physics and Astronomy, University of Pennsylvania, Philadelphia, Pennsylvania 19104 (United States)

    2013-11-15

    We present a simple and very convincing approach to visualizing that subsequent layers of graphene grow between the existing monolayer graphene and the copper catalyst in chemical vapor deposition (CVD). Graphene samples were grown by CVD and then transferred onto glass substrates by the bubbling method in two ways, either direct-transfer (DT) to yield poly (methyl methacrylate) (PMMA)/graphene/glass or (2) inverted transfer (IT) to yield graphene/PMMA/glass. Field emission scanning electron microscopy (FE-SEM) and atomic force microscopy (AFM) were used to reveal surface features for both the DT and IT samples. The results from FE-SEM and AFM topographic analyses of the surfaces revealed the underlayer growth of subsequent layers. The subsequent layers in the IT samples are visualized as 3D structures, where the smaller graphene layers lie above the larger layers stacked in a concentric manner. The results support the formation of the so-called “inverted wedding cake” stacking in multilayer graphene growth.

  7. Optical Diagnostics in the Combustion Chemical Vapor Deposition Proces

    Science.gov (United States)

    Luten, Henry; Oljaca, Miodrag; Tomov, Trifon; Metzger, Timothy

    1999-11-01

    Optical emission spectroscopy and IR temperature measurements are used to investigate the structure of a sub-micron droplet spray flame in the Combustion Chemical Vapor Deposition (CCVD) process. The specific system examined in this study is the deposition of barium-strontium-titanate (BaxSr1-xTiO3), a high performance ferroelectric. Spectral measurements were used to determine the decomposition rates of the precursors as well as the lifetimes and relative concentrations of the primary decomposition products. The emissions from atomic and unimolecular species reach a maximum value early in the flame and then decrease sharply, indicating very fast reaction rates. This data, however, is a function of the flame temperature. In order to arrive at proper relative concentration data, the optical emission data must be normalized using measured temperature. Two-dimensional temperature maps were obtained using a non-contact, infrared temperature sensor with peak sensitivity at 4.5 microns. It was found that the sodium emission intensity correlates with the flame temperature, and the sodium emission was used as an internal standard for removing the temperature factor and isolating the relative concentration data. While the flame temperature reaches maximum value at approximately 2 cm, the normalized emission for most species reaches peak intensity closer to the nozzle exit.

  8. Backbone-Degradable Polymers Prepared by Chemical Vapor Deposition.

    Science.gov (United States)

    Xie, Fan; Deng, Xiaopei; Kratzer, Domenic; Cheng, Kenneth C K; Friedmann, Christian; Qi, Shuhua; Solorio, Luis; Lahann, Joerg

    2017-01-02

    Polymers prepared by chemical vapor deposition (CVD) polymerization have found broad acceptance in research and industrial applications. However, their intrinsic lack of degradability has limited wider applicability in many areas, such as biomedical devices or regenerative medicine. Herein, we demonstrate, for the first time, a backbone-degradable polymer directly synthesized via CVD. The CVD co-polymerization of [2.2]para-cyclophanes with cyclic ketene acetals, specifically 5,6-benzo-2-methylene-1,3-dioxepane (BMDO), results in well-defined, hydrolytically degradable polymers, as confirmed by FTIR spectroscopy and ellipsometry. The degradation kinetics are dependent on the ratio of ketene acetals to [2.2]para-cyclophanes as well as the hydrophobicity of the films. These coatings address an unmet need in the biomedical polymer field, as they provide access to a wide range of reactive polymer coatings that combine interfacial multifunctionality with degradability. © 2017 Wiley-VCH Verlag GmbH & Co. KGaA, Weinheim.

  9. Carbon nanowalls grown by microwave plasma enhanced chemical vapor deposition during the carbonization of polyacrylonitrile fibers

    Energy Technology Data Exchange (ETDEWEB)

    Li Jiangling; Su Shi; Kundrat, Vojtech; Abbot, Andrew M.; Ye, Haitao [School of Engineering and Applied Science, Aston University, Birmingham B4 7ET (United Kingdom); Zhou Lei [Department of Metallurgy and Materials, University of Birmingham, Birmingham B15 2TT (United Kingdom); Mushtaq, Fajer [Department of Mechanical Engineering, ETH Zurich, Zurich 8092 (Switzerland); Ouyang Defang [School of Life and Health Science, Aston University, Birmingham B4 7ET (United Kingdom); James, David; Roberts, Darren [Thermo Fisher Scientific, Stafford House, Hemel Hempstead HP2 7GE (United Kingdom)

    2013-01-14

    We used microwave plasma enhanced chemical vapor deposition (MPECVD) to carbonize an electrospun polyacrylonitrile (PAN) precursor to form carbon fibers. Scanning electron microscopy, Raman spectroscopy, and Fourier transform infrared spectroscopy were used to characterize the fibers at different evolution stages. It was found that MPECVD-carbonized PAN fibers do not exhibit any significant change in the fiber diameter, whilst conventionally carbonized PAN fibers show a 33% reduction in the fiber diameter. An additional coating of carbon nanowalls (CNWs) was formed on the surface of the carbonized PAN fibers during the MPECVD process without the assistance of any metallic catalysts. The result presented here may have a potential to develop a novel, economical, and straightforward approach towards the mass production of carbon fibrous materials containing CNWs.

  10. Microwave Plasma Enhanced Chemical Vapor Deposition of Diamond in Vapor of Methanol-Based Liquid Solutions

    National Research Council Canada - National Science Library

    Tzeng, Yonhua

    2000-01-01

    .... An electrical discharge is generated by microwave power in a metal cavity in order to dissociate the vapor mixture from one of the liquid solutions, from which radicals such as OH, O, and H that etch...

  11. Continuous Fabrication of SiC Fiber Tows by Chemical Vapor Deposition

    Science.gov (United States)

    1993-01-01

    Niobium Carbonitride Films on Carbon Fibers," pp. 300-14 in Proceedings on the Seventh International Conference on Chemical Vapor Deposition, The...34Modeling of the Chemical Vapor Deposition of YI3a 2Cu30z, TiB•, and SiC Thin Films Onto Continuous Ceramic Tows," Ph.D. Dissertation, School of...SUJRJ Ct 7URM’S 15. NUMBER OF PAGES 98 Fibers, Silicon (Carbide. Chemical Vapor Deposition 16. PRICE CODE F SFSCURV C’A1 ’,’-,(AH.T,.)I•sJ $ ,,ui T 7

  12. Self-catalytic growth of tin oxide nanowires by chemical vapor deposition process

    CSIR Research Space (South Africa)

    Thabethe, BS

    2013-01-01

    Full Text Available The authors report on the synthesis of tin oxide (SnO(sub2)) nanowires by a chemical vapor deposition (CVD) process. Commercially bought SnO nanopowders were vaporized at 1050°C for 30 minutes with argon gas continuously passing through the system...

  13. A new productivity function and stability criterion in chemical vapor transport processes

    NARCIS (Netherlands)

    Klosse, K.

    1975-01-01

    The crystal growth rate in a chemical vapor transport process using a closed system is analyzed on the basis of a one-dimensional configuration. A simplified model of vapor transport enables one to obtain a set of equations yielding the rates of reaction without a complete evaluation of the partial

  14. A novel method for furfural recovery via gas stripping assisted vapor permeation by a polydimethylsiloxane membrane

    Science.gov (United States)

    Hu, Song; Guan, Yu; Cai, Di; Li, Shufeng; Qin, Peiyong; Karim, M. Nazmul; Tan, Tianwei

    2015-03-01

    Furfural is an important platform chemical with a wide range of applications. However, due to the low concentration of furfural in the hydrolysate, the conventional methods for furfural recovery are energy-intensive and environmentally unfriendly. Considering the disadvantages of pervaporation (PV) and distillation in furfural separation, a novel energy-efficient `green technique', gas stripping assisted vapor permeation (GSVP), was introduced in this work. In this process, the polydimethylsiloxane (PDMS) membrane was prepared by employing water as solvent. Coking in pipe and membrane fouling was virtually non-existent in this new process. In addition, GSVP was found to achieve the highest pervaporation separation index of 216200 (permeate concentration of 71.1 wt% and furfural flux of 4.09 kgm-2h-1) so far, which was approximately 2.5 times higher than that found in pervaporation at 95°C for recovering 6.0 wt% furfural from water. Moreover, the evaporation energy required for GSVP decreased by 35% to 44% relative to that of PV process. Finally, GSVP also displayed more promising potential in industrial application than PV, especially when coupled with the hydrolysis process or fermentation in biorefinery industry.

  15. Determination of some refractory elements and Pb by fluorination assisted electrothermal vaporization inductively coupled plasma mass spectrometry with platform and wall vaporization

    Energy Technology Data Exchange (ETDEWEB)

    Zhang Yuefei; Hu Bin, E-mail: binhu@whu.edu.cn

    2011-02-15

    Platform and wall vaporization for electrothermal vaporization (ETV)-inductively coupled plasma mass spectrometry (ICP-MS) determination of some refractory elements (Ti, V, Cr, Mo, La and Zr) and Pb were comparatively studied with the use of poly (tetrafluoroethylene) (PTFE) as fluorinating reagent. The factors affecting the vaporization behaviors of the target analytes in the platform and tube wall vaporization including vaporization temperature and time, pyrolytic temperature and time were studied in detail, and the flow rates of carrier gas/auxiliary carrier gas, were carefully optimized. Under the optimal conditions, the signal profiles, signal intensity, interferences of coexisting ions and analytical reproducibility for wall and platform vaporization ETV-ICP-MS were compared. It was found that both wall and platform vaporization could give very similar detection limits, but the platform vaporization provided higher signal intensity and better precision for some refractory elements and Pb than the wall vaporization. Especially for La, the signal intensity obtained by platform vaporization was 3 times higher than that obtained by wall vaporization. For platform vaporization ETV-ICP-MS, the limits of detection (LODs) of 0.001 {mu}g L{sup -1} (La) {approx} 0.09 {mu}g L{sup -1} (Ti) with the relative standard deviations (RSDs) of 1.5% (Pb) {approx} 15.5% (Zr) were obtained. While for wall vaporization ETV-ICP-MS, LODs of 0.005 {mu}g L{sup -1} (La) {approx} 0.4 {mu}g L{sup -1} (Pb) with RSDs of 3.2% (Mo) {approx} 12.8% (Zr) were obtained. Both platform and tube wall vaporization techniques have been used for slurry sampling fluorination assisted ETV-ICP-MS direct determination of Ti, V, Cr, Mo, La, Zr and Pb in certified reference materials of NIES No. 8 vehicle exhaust particulates and GBW07401 soil, and the analytical results obtained are in good agreement with the certified values.

  16. Low-Pressure Chemical Vapor (LPCVD) Graphene Growth Study and Raman Characterization

    Science.gov (United States)

    2013-12-01

    films deposited for a growth study is discussed. Low pressure chemical vapor deposition was utilized to grow graphene layers onto copper foil substrates...exfoliation method (3); however, recent efforts have focused on graphene synthesis by conventional methods, such as chemical vapor deposition ( CVD ) and...ultrahigh vacuum, high temperature annealing (i.e., epitaxial graphene from SiC) (4, 5). CVD , in particular, is a promising growth technique because

  17. Spray Chemical Vapor Deposition of Single-Source Precursors for Chalcopyrite I-III-VI2 Thin-Film Materials

    Science.gov (United States)

    Hepp, Aloysius F.; Banger, Kulbinder K.; Jin, Michael H.-C.; Harris, Jerry D.; McNatt, Jeremiah S.; Dickman, John E.

    2008-01-01

    Thin-film solar cells on flexible, lightweight, space-qualified substrates provide an attractive approach to fabricating solar arrays with high mass-specific power. A polycrystalline chalcopyrite absorber layer is among the new generation of photovoltaic device technologies for thin film solar cells. At NASA Glenn Research Center we have focused on the development of new single-source precursors (SSPs) for deposition of semiconducting chalcopyrite materials onto lightweight, flexible substrates. We describe the syntheses and thermal modulation of SSPs via molecular engineering. Copper indium disulfide and related thin-film materials were deposited via aerosol-assisted chemical vapor deposition using SSPs. Processing and post-processing parameters were varied in order to modify morphology, stoichiometry, crystallography, electrical properties, and optical properties to optimize device quality. Growth at atmospheric pressure in a horizontal hotwall reactor at 395 C yielded the best device films. Placing the susceptor closer to the evaporation zone and flowing a more precursor-rich carrier gas through the reactor yielded shinier-, smoother-, and denser-looking films. Growth of (112)-oriented films yielded more Cu-rich films with fewer secondary phases than growth of (204)/(220)-oriented films. Post-deposition sulfur-vapor annealing enhanced stoichiometry and crystallinity of the films. Photoluminescence studies revealed four major emission bands and a broad band associated with deep defects. The highest device efficiency for an aerosol-assisted chemical vapor deposited cell was one percent.

  18. Enhanced aerodynamic reach of vapor and aerosol sampling for real-time mass spectrometric detection using Venturi-assisted entrainment and ionization.

    Science.gov (United States)

    Forbes, Thomas P; Staymates, Matthew

    2017-03-08

    Venturi-assisted ENTrainment and Ionization (VENTI) was developed, demonstrating efficient entrainment, collection, and transport of remotely sampled vapors, aerosols, and dust particulate for real-time mass spectrometry (MS) detection. Integrating the Venturi and Coandă effects at multiple locations generated flow and analyte transport from non-proximate locations and more importantly enhanced the aerodynamic reach at the point of collection. Transport through remote sampling probes up to 2.5 m in length was achieved with residence times on the order of 10 -2  s to 10 -1  s and Reynolds numbers on the order of 10 3 to 10 4 . The Venturi-assisted entrainment successfully enhanced vapor collection and detection by greater than an order of magnitude at 20 cm stand-off (limit of simple suction). This enhancement is imperative, as simple suction restricts sampling to the immediate vicinity, requiring close proximity to the vapor source. In addition, the overall aerodynamic reach distance was increased by approximately 3-fold over simple suction under the investigated conditions. Enhanced aerodynamic reach was corroborated and observed with laser-light sheet flow visualization and schlieren imaging. Coupled with atmospheric pressure chemical ionization (APCI), the detection of a range of volatile chemical vapors; explosive vapors; explosive, narcotic, and mustard gas surrogate (methyl salicylate) aerosols; and explosive dust particulate was demonstrated. Continuous real-time Venturi-assisted monitoring of a large room (approximately 90 m 2 area, 570 m 3 volume) was demonstrated for a 60-min period without the remote sampling probe, exhibiting detection of chemical vapors and methyl salicylate at approximately 3 m stand-off distances within 2 min of exposure. Published by Elsevier B.V.

  19. Chemical vapor deposition of fluorine-doped zinc oxide

    Science.gov (United States)

    Gordon, Roy G.; Kramer, Keith; Liang, Haifan

    2000-06-06

    Fims of fluorine-doped zinc oxide are deposited from vaporized precursor compounds comprising a chelate of a dialkylzinc, such as an amine chelate, an oxygen source, and a fluorine source. The coatings are highly electrically conductive, transparent to visible light, reflective to infrared radiation, absorbing to ultraviolet light, and free of carbon impurity.

  20. Potentiometric detection of chemical vapors using molecularly imprinted polymers as receptors

    Science.gov (United States)

    Liang, Rongning; Chen, Lusi; Qin, Wei

    2015-07-01

    Ion-selective electrode (ISE) based potentiometric gas sensors have shown to be promising analytical tools for detection of chemical vapors. However, such sensors are only capable of detecting those vapors which can be converted into ionic species in solution. This paper describes for the first time a polymer membrane ISE based potentiometric sensing system for sensitive and selective determination of neutral vapors in the gas phase. A molecularly imprinted polymer (MIP) is incorporated into the ISE membrane and used as the receptor for selective adsorption of the analyte vapor from the gas phase into the sensing membrane phase. An indicator ion with a structure similar to that of the vapor molecule is employed to indicate the change in the MIP binding sites in the membrane induced by the molecular recognition of the vapor. The toluene vapor is used as a model and benzoic acid is chosen as its indicator. Coupled to an apparatus manifold for preparation of vapor samples, the proposed ISE can be utilized to determine volatile toluene in the gas phase and allows potentiometric detection down to parts per million levels. This work demonstrates the possibility of developing a general sensing principle for detection of neutral vapors using ISEs.

  1. Synthesis of Graphene Nanoribbons by Ambient-Pressure Chemical Vapor Deposition and Device Integration.

    Science.gov (United States)

    Chen, Zongping; Zhang, Wen; Palma, Carlos-Andres; Lodi Rizzini, Alberto; Liu, Bilu; Abbas, Ahmad; Richter, Nils; Martini, Leonardo; Wang, Xiao-Ye; Cavani, Nicola; Lu, Hao; Mishra, Neeraj; Coletti, Camilla; Berger, Reinhard; Klappenberger, Florian; Kläui, Mathias; Candini, Andrea; Affronte, Marco; Zhou, Chongwu; De Renzi, Valentina; Del Pennino, Umberto; Barth, Johannes V; Räder, Hans Joachim; Narita, Akimitsu; Feng, Xinliang; Müllen, Klaus

    2016-11-30

    Graphene nanoribbons (GNRs), quasi-one-dimensional graphene strips, have shown great potential for nanoscale electronics, optoelectronics, and photonics. Atomically precise GNRs can be "bottom-up" synthesized by surface-assisted assembly of molecular building blocks under ultra-high-vacuum conditions. However, large-scale and efficient synthesis of such GNRs at low cost remains a significant challenge. Here we report an efficient "bottom-up" chemical vapor deposition (CVD) process for inexpensive and high-throughput growth of structurally defined GNRs with varying structures under ambient-pressure conditions. The high quality of our CVD-grown GNRs is validated by a combination of different spectroscopic and microscopic characterizations. Facile, large-area transfer of GNRs onto insulating substrates and subsequent device fabrication demonstrate their promising potential as semiconducting materials, exhibiting high current on/off ratios up to 6000 in field-effect transistor devices. This value is 3 orders of magnitude higher than values reported so far for other thin-film transistors of structurally defined GNRs. Notably, on-surface mass spectrometry analyses of polymer precursors provide unprecedented evidence for the chemical structures of the resulting GNRs, especially the heteroatom doping and heterojunctions. These results pave the way toward the scalable and controllable growth of GNRs for future applications.

  2. Microstructure of C/C composites prepared by chemical vapor infiltration method with vaporized kerosene as a precursor

    Energy Technology Data Exchange (ETDEWEB)

    Wang Jiping [State Key Laboratory for Mechanical Behavior of Materials, Xi' an Jiaotong University, Xi' an 710049 (China)]. E-mail: jipingwang@gmail.com; Qian Junmin [State Key Laboratory for Mechanical Behavior of Materials, Xi' an Jiaotong University, Xi' an 710049 (China); Jin Zhihao [State Key Laboratory for Mechanical Behavior of Materials, Xi' an Jiaotong University, Xi' an 710049 (China); Qiao Guanjun [State Key Laboratory for Mechanical Behavior of Materials, Xi' an Jiaotong University, Xi' an 710049 (China)

    2006-03-15

    The microstructures of two types of C/C composites prepared from different carbon felts by a rapid densification method, thermal gradient chemical vapor infiltration with vaporized kerosene as a precursor, at 1080-1120 deg. C for 6 h were characterized by polarized light microscopy (PLM), scanning electron microscopy (SEM), X-ray diffraction (XRD) and Raman micro-spectrometry techniques. The experimental results show that the fibers in the two composites are both surrounded by ring-shaped pyrocarbons with rough laminar texture, but the thickness, the surface morphology of the pyrocarbons and the graphitizability of the composites depend much on the configurations of carbon felts. The C/C composite fabricated from a higher porosity carbon felt possesses larger thickness and rougher surface of pyrocarbon, and has a lower graphitizability after heat treatment at 2300 deg. C for 2 h.

  3. Processing Research on Chemically Vapor Deposited Silicon Nitride.

    Science.gov (United States)

    1979-12-01

    34 sea urchins ") predominated, suggesting that formation was primarily from the vapor phase with little of the nodular growths seen at only slightly...deposition parameters on crystallite size, morphology and deposition rate. Geometries include a cold-wall, flat plate reactor (CW) and 4-inch and 1-inch...typical crossections of banded deposits and deposits which showed transitions from amorphous to crystalline morphologies , respectively. Figure 2-5

  4. Chemical Vapor Detection with a Multispectral Thermal Imager

    National Research Council Canada - National Science Library

    Althouse, Mark L. G; Chang, Chein-I

    1991-01-01

    .... Real-time autonomous detection and alarm is also required. A detection system model by Warren, based on a Gaussian vapor concentration distribution is the basis for detection algorithms. Algorithms recursive in both time and spectral frequency have been derived using Kalman filter theory. Adaptive filtering is used for preprocessing clutter rejection. Various components of the detection system have been tested individually and an integrated system is now being fabricated.

  5. A mathematical model and simulation results of plasma enhanced chemical vapor deposition of silicon nitride films

    NARCIS (Netherlands)

    Konakov, S.A.; Krzhizhanovskaya, V.V.

    2015-01-01

    We developed a mathematical model of Plasma Enhanced Chemical Vapor Deposition (PECVD) of silicon nitride thin films from SiH4-NH3-N2-Ar mixture, an important application in modern materials science. Our multiphysics model describes gas dynamics, chemical physics, plasma physics and electrodynamics.

  6. Industrial Scale Synthesis of Carbon Nanotubes Via Fluidized Bed Chemical Vapor Deposition: A Senior Design Project

    Science.gov (United States)

    Smith, York R.; Fuchs, Alan; Meyyappan, M.

    2010-01-01

    Senior year chemical engineering students designed a process to produce 10 000 tonnes per annum of single wall carbon nanotubes (SWNT) and also conducted bench-top experiments to synthesize SWNTs via fluidized bed chemical vapor deposition techniques. This was an excellent pedagogical experience because it related to the type of real world design…

  7. Membrane-assisted vapor stripping: energy efficient hybrid distillation-vapor permeation process for alcohol-water separation

    Science.gov (United States)

    BACKGROUND: Energy efficient alternatives to distillation for alcohol recovery from dilute solution are needed to improve biofuel sustainability. A process integrating steam stripping with a vapor compression step and a vapor permeation membrane separation step is proposed. The...

  8. A chemical kinetic model for chemical vapor deposition of carbon nanotubes

    Science.gov (United States)

    Raji, K.; Thomas, Shijo; Sobhan, C. B.

    2011-10-01

    Carbon nanotubes (CNTs) are classified among the most promising novel materials due to their exceptional physical properties. Still, optimal fabrication of carbon nanotubes involves a number of challenges. Whatever be the fabrication method, a process optimization can be evolved only on the basis of a good theoretical model to predict the parametric influences on the final product. The work reported here investigates the dependence of the deposition parameters on the controllable parameters for carbon nanotube growth during Chemical vapor deposition (CVD), through a chemical kinetic model. The theoretical model consisted of the design equations and the energy balance equations, based on the reaction kinetics, for the plug flow and the batch reactor, which simulate the CVD system. The numerical simulation code was developed in-house in a g++ environment. The results predicted the growth conditions for CNT: the deposition temperature, pressure and number of atoms, which were found to be influenced substantially by the initial controllable parameters namely the temperature, volumetric flow rate of the carbon precursor, and the reaction time. An experimental study was also conducted on a CVD system developed in the laboratory, to benchmark the computational results. The experimental results were found to agree well with the theoretical predictions obtained from the model.

  9. Electron emission from nano-structured carbon films fabricated by hot-filament chemical-vapor deposition and microwave plasma-enhanced chemical vapor deposition

    CERN Document Server

    Park, K H; Lee, K M; Oh, S G; Lee, S I; Koh, K H

    2000-01-01

    The electron-emission characteristics of nano-structured carbon films fabricated by using the HFCVD (hot- filament chemical-vapor deposition) and the MPECVD (microwave plasma-enhanced chemical-vapor deposition) methods with a metal catalyst are presented. According to our observation, neither the formation nor the alignment of nano tubes is absolutely necessary to realize carbon-based electron emitters. However, utilization of chrome as an interlayer between Si substrates and metal catalyst particles results in a great improvement in the emission characteristics and the mechanical stability. Also, fabrication of good electron-emitting carbon films on glass substrates, with sputter-deposited chrome electrodes,at a nominal temperature approx 615 .deg. C was demonstrated.

  10. Chemical Vapor Deposition and Atomic Layer Deposition of Coatings for Mechanical Applications

    Science.gov (United States)

    Doll, G. L.; Mensah, B. A.; Mohseni, H.; Scharf, T. W.

    2010-01-01

    Chemical vapor deposition (CVD) of films and coatings involves the chemical reaction of gases on or near a substrate surface. This deposition method can produce coatings with tightly controlled dimensions and novel structures. Furthermore, the non-line-of-sight-deposition capability of CVD facilitates the coating of complex-shaped mechanical components. Atomic layer deposition (ALD) is also a chemical gas phase thin film deposition technique, but unlike CVD, it utilizes “self-limiting” surface adsorption reactions (chemisorption) to control the thickness of deposited films. This article provides an overview of CVD and ALD, discusses some of their fundamental and practical aspects, and examines their advantages and limitations versus other vapor processing techniques such as physical vapor deposition in regard to coatings for mechanical applications. Finally, site-specific cross-sectional transmission electron microscopy inside the wear track of an ALD ZnO/ZrO2 8 bilayers nanolaminate coating determined the mechanisms that control the friction and wear.

  11. A new technique to assess dermal absorption of chemical vapor in vitro by thermogravimetric analysis (TGA)

    OpenAIRE

    Rauma, Matias

    2008-01-01

    There is a huge lack of dermal uptake data for chemicals, and it is frequent with large variations in reported permeability coefficients for chemicals with more than one data set, showing the need for a new and standardized in vitro method. The overall aim of this thesis was to develop the new method of measuring dermal absorption of chemical vapor using the TGA method. Assessment of dermal absorption by TGA (Study I) Round pieces (ø8 mm) of pig epidermis were placed on ...

  12. Complementary Metal Oxide Semiconductor-Compatible, High-Mobility, ⟨111⟩-Oriented GaSb Nanowires Enabled by Vapor-Solid-Solid Chemical Vapor Deposition.

    Science.gov (United States)

    Yang, Zai-Xing; Liu, Lizhe; Yip, SenPo; Li, Dapan; Shen, Lifan; Zhou, Ziyao; Han, Ning; Hung, Tak Fu; Pun, Edwin Yue-Bun; Wu, Xinglong; Song, Aimin; Ho, Johnny C

    2017-04-25

    Using CMOS-compatible Pd catalysts, we demonstrated the formation of high-mobility ⟨111⟩-oriented GaSb nanowires (NWs) via vapor-solid-solid (VSS) growth by surfactant-assisted chemical vapor deposition through a complementary experimental and theoretical approach. In contrast to NWs formed by the conventional vapor-liquid-solid (VLS) mechanism, cylindrical-shaped Pd5Ga4 catalytic seeds were present in our Pd-catalyzed VSS-NWs. As solid catalysts, stoichiometric Pd5Ga4 was found to have the lowest crystal surface energy and thus giving rise to a minimal surface diffusion as well as an optimal in-plane interface orientation at the seed/NW interface for efficient epitaxial NW nucleation. These VSS characteristics led to the growth of slender NWs with diameters down to 26.9 ± 3.5 nm. Over 95% high crystalline quality NWs were grown in ⟨111⟩ orientation for a wide diameter range of between 10 and 70 nm. Back-gated field-effect transistors (FETs) fabricated using the Pd-catalyzed GaSb NWs exhibit a superior peak hole mobility of ∼330 cm2 V-1 s-1, close to the mobility limit for a NW channel diameter of ∼30 nm with a free carrier concentration of ∼1018 cm-3. This suggests that the NWs have excellent homogeneity in phase purity, growth orientation, surface morphology and electrical characteristics. Contact printing process was also used to fabricate large-scale assembly of Pd-catalyzed GaSb NW parallel arrays, confirming the potential constructions and applications of these high-performance electronic devices.

  13. One-step synthesis of chlorinated graphene by plasma enhanced chemical vapor deposition

    Energy Technology Data Exchange (ETDEWEB)

    Fan, Liwei; Zhang, Hui; Zhang, Pingping; Sun, Xuhui, E-mail: xhsun@suda.edu.cn

    2015-08-30

    Highlights: • We developed a simple approach to synthesize the single layer chlorinated graphene. • CuCl{sub 2} on Cu surface is used as Cl source under the plasma treatment. • The formation of covalent C−Cl bond has been investigated by Raman and XPS. • Raman results indicate the p-type doping effect of chlorination. - Abstract: We developed an approach to synthesize the chlorinated single layer graphene (Cl-G) by one-step plasma enhanced chemical vapor deposition. Copper foil was simply treated with hydrochloric acid and then CuCl{sub 2} formed on the surface was used as Cl source under the assistance of plasma treatment. Compared with other two-step methods by post plasma/photochemical treatment of CVD-grown single layer graphene (SLG), one-step Cl-G synthesis approach is quite straightforward and effective. X-ray photoelectron spectroscopy (XPS) revealed that ∼2.45 atom% Cl remained in SLG. Compared with the pristine SLG, the obvious blue shifts of G band and 2D band along with the appearance of D’ band and D + G band in the Raman spectra indicate p-type doping of Cl-G.

  14. Assessment and control of chemical risk from organic vapors for attendants in a gas station

    Directory of Open Access Journals (Sweden)

    Stephanie Ehmig Santillán

    2015-12-01

    Full Text Available This research comprises monitoring, assessment and recommendations for chemical risk originating from organic vapors (benzene, toluene and xylene of fuel (super and extra gasoline to which attendants at a gas station are exposed. Given the concentration measured of organic vapors (benzene, toluene and xylene the chemical risk to which attendants are exposed in the supply area is acceptable. Control measures are recommended to ensure healthy working conditions for gas station attendants and also to avoid occurrence of occupational diseases in the medium or long term

  15. Half-sandwich cobalt complexes in the metal-organic chemical vapor deposition process

    Energy Technology Data Exchange (ETDEWEB)

    Georgi, Colin [Technische Universität Chemnitz, Faculty of Natural Science, Institute of Chemistry, Inorganic Chemistry, Chemnitz 09107 (Germany); Hapke, Marko; Thiel, Indre [Leibniz-Institut für Katalyse e.V. an der Universität Rostock (LIKAT), Albert-Einstein-Straße 29a, Rostock 18059 (Germany); Hildebrandt, Alexander [Technische Universität Chemnitz, Faculty of Natural Science, Institute of Chemistry, Inorganic Chemistry, Chemnitz 09107 (Germany); Waechtler, Thomas; Schulz, Stefan E. [Fraunhofer Institute of Electronic Nano Systems (ENAS), Technologie-Campus 3, Chemnitz 09126 (Germany); Technische Universität Chemnitz, Center for Microtechnologies (ZfM), Chemnitz 09107 (Germany); Lang, Heinrich, E-mail: heinrich.lang@chemie.tu-chemnitz.de [Technische Universität Chemnitz, Faculty of Natural Science, Institute of Chemistry, Inorganic Chemistry, Chemnitz 09107 (Germany)

    2015-03-02

    A series of cobalt half-sandwich complexes of type [Co(η{sup 5}-C{sub 5}H{sub 5})(L)(L′)] (1: L, L′ = 1,5-hexadiene; 2: L = P(OEt){sub 3}, L′ = H{sub 2}C=CHSiMe{sub 3}; 3: L = L′ = P(OEt){sub 3}) has been studied regarding their physical properties such as the vapor pressure, decomposition temperature and applicability within the metal-organic chemical vapor deposition (MOCVD) process, with a focus of the influence of the phosphite ligands. It could be shown that an increasing number of P(OEt){sub 3} ligands increases the vapor pressure and thermal stability of the respective organometallic compound. Complex 3 appeared to be a promising MOCVD precursor with a high vapor pressure and hence was deposited onto Si/SiO{sub 2} (100 nm) substrates. The resulting reflective layer is closed, dense and homogeneous, with a slightly granulated surface morphology. X-ray photoelectron spectroscopy (XPS) studies demonstrated the formation of metallic cobalt, cobalt phosphate, cobalt oxide and cobalt carbide. - Highlights: • Thermal studies and vapor pressure measurements of cobalt half-sandwich complexes was carried out. • Chemical vapor deposition with cobalt half-sandwich complexes is reported. • The use of Co-phosphites results in significant phosphorous-doped metallic layers.

  16. Ti-doped hydrogenated diamond like carbon coating deposited by hybrid physical vapor deposition and plasma enhanced chemical vapor deposition

    Science.gov (United States)

    Lee, Na Rae; Sle Jun, Yee; Moon, Kyoung Il; Sunyong Lee, Caroline

    2017-03-01

    Diamond-like carbon films containing titanium and hydrogen (Ti-doped DLC:H) were synthesized using a hybrid technique based on physical vapor deposition (PVD) and plasma enhanced chemical vapor deposition (PECVD). The film was deposited under a mixture of argon (Ar) and acetylene gas (C2H2). The amount of Ti in the Ti-doped DLC:H film was controlled by varying the DC power of the Ti sputtering target ranging from 0 to 240 W. The composition, microstructure, mechanical and chemical properties of Ti-doped DLC:H films with varying Ti concentrations, were investigated using Raman spectroscopy, X-ray photoelectron spectroscopy (XPS), nano indentation, a ball-on-disk tribometer, a four-point probe system and dynamic anodic testing. As a result, the optimum composition of Ti in Ti-doped DLC:H film using our hybrid method was found to be a Ti content of 18 at. %, having superior electrical conductivity and high corrosion resistance, suitable for bipolar plates. Its hardness value was measured to be 25.6 GPa with a low friction factor.

  17. Lapping of chemical vapor deposited diamond films using copper vapor laser

    Energy Technology Data Exchange (ETDEWEB)

    Park, Y.J.; Baik, Y.J. [Korea Institute of Science and Technology, Seoul (Korea, Republic of)

    1999-04-01

    Laser lapping of diamond films is performed with focused beam of copper vapor laser. Both spherical and rod-shape laser beam are used. Diamond surface is scanned at various scan speeds(0.125, 0.5, 0.75 mm/sec) and beam shifts(5, 10, 20, 40, 100 {mu}m). At 0.125 mm/sec, 10 {mu}m scan condition, the level difference of diamond surface of about 700 {mu}m over 20 mm is reduced to 200 {mu}m. In addition, surface roughness is also improved from 3.53 {mu}m to 2.47 {mu}m at 5 {mu}m beam shift. But, at higher beam shift than 10{mu}m, laser scan makes the surface rougher, which is considered to be due to the non uniform spatial distribution of laser energy. It is concluded that homogenized laser beam with high average power is needed for large area laser lapping of diamond films at appreciable rates. 12 refs., 9 figs.

  18. Modeling of chemical vapor deposition. III. Silicon epitaxy from chlorosilanes

    Science.gov (United States)

    Korec, J.

    1983-02-01

    The approach presented in part I is applied here to model epitaxial growth of silicon from SiH 2Cl 2, SiHCl 3 and SiCl 4. We adopt the system of chemical reactions proposed by Nishizawa and Nihira and we assume the rate determining step to be the chemical reaction between adsorbed SiCl 2 and gaseous H 2. The basis of this approach is the computation of the activity of silicon in the gas phase near the substrate surface from the balance between the rate of mass transport in the gas phase and surface processes. The considered surface processes are: adsorption and surface diffusion of SiCl 2 and heterogenous chemical reaction. The calculated growth rate of the film agrees with experimental data for a wide range of technological conditions.

  19. Evaluation of Chemical Warfare Agent Percutaneous Vapor Toxicity: Derivation of Toxicity Guidelines for Assessing Chemical Protective Ensembles.

    Energy Technology Data Exchange (ETDEWEB)

    Watson, A.P.

    2003-07-24

    Percutaneous vapor toxicity guidelines are provided for assessment and selection of chemical protective ensembles (CPEs) to be used by civilian and military first responders operating in a chemical warfare agent vapor environment. The agents evaluated include the G-series and VX nerve agents, the vesicant sulfur mustard (agent HD) and, to a lesser extent, the vesicant Lewisite (agent L). The focus of this evaluation is percutaneous vapor permeation of CPEs and the resulting skin absorption, as inhalation and ocular exposures are assumed to be largely eliminated through use of SCBA and full-face protective masks. Selection of appropriately protective CPE designs and materials incorporates a variety of test parameters to ensure operability, practicality, and adequacy. One aspect of adequacy assessment should be based on systems tests, which focus on effective protection of the most vulnerable body regions (e.g., the groin area), as identified in this analysis. The toxicity range of agent-specific cumulative exposures (Cts) derived in this analysis can be used as decision guidelines for CPE acceptance, in conjunction with weighting consideration towards more susceptible body regions. This toxicity range is bounded by the percutaneous vapor estimated minimal effect (EME{sub pv}) Ct (as the lower end) and the 1% population threshold effect (ECt{sub 01}) estimate. Assumptions of exposure duration used in CPE certification should consider that each agent-specific percutaneous vapor cumulative exposure Ct for a given endpoint is a constant for exposure durations between 30 min and 2 hours.

  20. Physico-chemical mechanism for the vapors sensitivity of photoluminescent InP quantum dots

    Science.gov (United States)

    Prosposito, P.; De Angelis, R.; De Matteis, F.; Hatami, F.; Masselink, W. T.; Zhang, H.; Casalboni, M.

    2016-03-01

    InP/InGaP surface quantum dots are interesting materials for optical chemical sensors since they present an intense emission at room temperature, whose intensity changes rapidly and reversibly depending on the composition of the environmental atmosphere. We present here their emission properties by time resolved photoluminescence spectroscopy investigation and we discuss the physico-chemical mechanism behind their sensitivity to the surrounding atmosphere. Photoluminescence transients in inert atmosphere (N2) and in solvent vapours of methanol, clorophorm, acetone and water were measured. The presence of vapors of clorophorm, acetone and water showed a very weak effect on the transient times, while an increase of up to 15% of the decay time was observed for methanol vapour exposure. On the basis of the vapor molecule nature (polarity, proticity, steric hindrance, etc.) and of the interaction of the vapor molecules with the quantum dots surface a sensing mechanism involving quantum dots non-radiative surface states is proposed.

  1. Ballistic transport in graphene grown by chemical vapor deposition

    NARCIS (Netherlands)

    Calado, V.E.; Zhu, S.E.; Goswami, S.; Xu, Q.; Watanabe, K.; Taniguchi, T.; Janssen, G.C.A.M.; Vandersypen, L.M.K.

    2014-01-01

    In this letter, we report the observation of ballistic transport on micron length scales in graphene synthesised by chemical vapour deposition (CVD). Transport measurements were done on Hall bar geometries in a liquid He cryostat. Using non-local measurements, we show that electrons can be

  2. Development of a Computational Chemical Vapor Deposition Model: Applications to Indium Nitride and Dicyanovinylaniline

    Science.gov (United States)

    Cardelino, Carlos

    1999-01-01

    A computational chemical vapor deposition (CVD) model is presented, that couples chemical reaction mechanisms with fluid dynamic simulations for vapor deposition experiments. The chemical properties of the systems under investigation are evaluated using quantum, molecular and statistical mechanics models. The fluid dynamic computations are performed using the CFD-ACE program, which can simulate multispecies transport, heat and mass transfer, gas phase chemistry, chemistry of adsorbed species, pulsed reactant flow and variable gravity conditions. Two experimental setups are being studied, in order to fabricate films of: (a) indium nitride (InN) from the gas or surface phase reaction of trimethylindium and ammonia; and (b) 4-(1,1)dicyanovinyl-dimethylaminoaniline (DCVA) by vapor deposition. Modeling of these setups requires knowledge of three groups of properties: thermodynamic properties (heat capacity), transport properties (diffusion, viscosity, and thermal conductivity), and kinetic properties (rate constants for all possible elementary chemical reactions). These properties are evaluated using computational methods whenever experimental data is not available for the species or for the elementary reactions. The chemical vapor deposition model is applied to InN and DCVA. Several possible InN mechanisms are proposed and analyzed. The CVD model simulations of InN show that the deposition rate of InN is more efficient when pulsing chemistry is used under conditions of high pressure and microgravity. An analysis of the chemical properties of DCVA show that DCVA dimers may form under certain conditions of physical vapor transport. CVD simulations of the DCVA system suggest that deposition of the DCVA dimer may play a small role in the film and crystal growth processes.

  3. Plasma-enhanced chemical vapor deposition for YBCO film fabrication of superconducting fault-current limiter

    Energy Technology Data Exchange (ETDEWEB)

    Jun, Byung Hyuk; Kim, Chan Joong

    2006-05-15

    Since the high-temperature superconductor of oxide type was founded, many researches and efforts have been performed for finding its application field. The YBCO superconducting film fabricated on economic metal substrate with uniform critical current density is considered as superconducting fault-current limiter (SFCL). There are physical and chemical processes to fabricate superconductor film, and it is understood that the chemical methods are more economic to deposit large area. Among them, chemical vapor deposition (CVD) is a promising deposition method in obtaining film uniformity. To solve the problems due to the high deposition temperature of thermal CVD, plasma-enhanced chemical vapor deposition (PECVD) is suggested. This report describes the principle and fabrication trend of SFCL, example of YBCO film deposition by PECVD method, and principle of plasma deposition.

  4. Growth Process Conditions of Tungsten Oxide Thin Films Using Hot-Wire Chemical Vapor Deposition

    NARCIS (Netherlands)

    Houweling, Z.S.|info:eu-repo/dai/nl/251874486; Geus, J.W.; de Jong, M.; Harks, P.P.R.M.L.; van der Werf, C.H.M.; Schropp, R.E.I.|info:eu-repo/dai/nl/072502584

    2011-01-01

    We report the growth conditions of nanostructured tungsten oxide (WO3−x) thin films using hot-wire chemical vapor deposition (HWCVD). Two tungsten filaments were resistively heated to various temperatures and exposed to an air flow at various subatmospheric pressures. The oxygen partial pressure was

  5. Chemical Vapor Deposition of Atomically-Thin Molybdenum Disulfide (MoS2)

    Science.gov (United States)

    2015-03-01

    DISULFIDE ( MoS2 ) Daniel Kaplan Kendall Mills Venkataraman Swaminathan March 2015 Approved for public release...4. TITLE AND SUBTITLE CHEMICAL VAPOR DEPOSITION OF ATOMICALLY-THIN MOLYBDENUM DISULFIDE ( MoS2 ) 5a. CONTRACT NUMBER 5b. GRANT NUMBER...distribution is unlimited. 13. SUPPLEMENTARY NOTES 14. ABSTRACT A method of synthesizing monolayers of molybdenum disulfide ( MoS2 ) via

  6. Single Molecule Source Reagents for Chemical Vapor Deposition of B- Silicon Carbide

    Science.gov (United States)

    1992-12-10

    Phase I conclusively showed the feasibility of rational design of single molecule -source reagents that could lead to improvements in the chemical...vapor deposition of stoichiometric Beta silicon carbide. Four single molecule sources were synthesized, their decomposition pathways studied, and their

  7. Pattern Dependency and Loading Effect of Pure-Boron-Layer Chemical-Vapor Deposition

    NARCIS (Netherlands)

    Mohammadi, V.; De Boer, W.B.; Scholtes, T.L.M.; Nanver, L.K.

    2012-01-01

    The pattern dependency of pure-boron (PureB) layer chemical-vapor Deposition (CVD) is studied with respect to the correlation between the deposition rate and features like loading effects, deposition parameters and deposition window sizes. It is shown experimentally that the oxide coverage ratio and

  8. Controlling the resistivity gradient in chemical vapor deposition-deposited aluminum-doped zinc oxide

    NARCIS (Netherlands)

    Ponomarev, M. V.; Verheijen, M. A.; Keuning, W.; M. C. M. van de Sanden,; Creatore, M.

    2012-01-01

    Aluminum-doped ZnO (ZnO:Al) grown by chemical vapor deposition (CVD) generally exhibit a major drawback, i.e., a gradient in resistivity extending over a large range of film thickness. The present contribution addresses the plasma-enhanced CVD deposition of ZnO: Al layers by focusing on the control

  9. Plasma enhanced chemical vapor deposition silicon oxynitride optimized for application in integrated optics

    NARCIS (Netherlands)

    Worhoff, Kerstin; Driessen, A.; Lambeck, Paul; Hilderink, L.T.H.; Linders, Petrus W.C.; Popma, T.J.A.

    1999-01-01

    Silicon Oxynitride layers are grown from SiH4/N2, NH3 and N2O by Plasma Enhanced Chemical Vapor Deposition. The process is optimized with respect to deposition of layers with excellent uniformity in the layer thickness, high homogeneity of the refractive index and good reproducibility of the layer

  10. Influence of the catalyst type on the growth of carbon nanotubes via methane chemical vapor deposition

    NARCIS (Netherlands)

    Jodin, Lucie; Dupuis, Anne-Claire; Rouvière, Emmanuelle; Reiss, Peter

    2006-01-01

    The preparation of the catalyst is one of the key parameters which governs the quality of carbon nanotubes (CNTs) grown by catalyzed chemical vapor deposition (CVD). We investigated the influence of three different procedures of catalyst preparation on the type and diameter of CNTs formed under

  11. Tip-based chemical vapor deposition with a scanning nano-heater

    NARCIS (Netherlands)

    Gaitas, A.

    2013-01-01

    In this preliminary effort, a moving nano-heater directs a chemical vapor deposition reaction (nano-CVD) demonstrating a tip-based nanofabrication (TBN) method. Localized nano-CVD of copper (Cu) and copper oxide (CuO) on a silicon (Si) and silicon oxide (SiO2) substrate from gasses, namely

  12. Tandem solar cells deposited using hot-wire chemical vapor deposition

    NARCIS (Netherlands)

    Veen, M.K. van

    2003-01-01

    In this thesis, the application of the hot-wire chemical vapor deposition (HWCVD) technique for the deposition of silicon thin films is described. The HWCVD technique is based on the dissociation of silicon-containing gasses at the catalytic surface of a hot filament. Advantages of this technique

  13. Optimization of plasma-enhanced chemical vapor deposition silicon oxynitride layers for integrated optics applications

    NARCIS (Netherlands)

    Hussein, M.G.; Worhoff, Kerstin; Sengo, G.; Sengo, G.; Driessen, A.

    2007-01-01

    Silicon oxynitride $(SiO_{x}N_{y}:H)$ layers were grown from 2% $SiH_{4}/N_{2}$ and $N_{2}O$ gas mixtures by plasma-enhanced chemical vapor deposition (PECVD). Layer properties such as refractive index, deposition rate, thickness non-uniformity and hydrogen bond content were correlated to the

  14. Kinetic Study of the Chemical Vapor Deposition of Tantalum in Long Narrow Channels

    DEFF Research Database (Denmark)

    Mugabi, James Atwoki; Eriksen, Søren; Petrushina, Irina

    2016-01-01

    A kinetic study of the chemical vapor deposition of tantalum in long narrow channels is done to optimize the industrial process for the manufacture of tantalum coated plate heat exchangers. The developed model fits well at temperatures between 750 and 850 °C, and in the pressure range of25–990 mbar...

  15. Atmospheric pressure chemical vapor deposition of ZnO: Process modeling and experiments

    NARCIS (Netherlands)

    Deelen, J. van; Illiberi, A.; Kniknie, B.; Beckers, E.H.A.; Simons, P.J.P.M.; Lankhorst, A.

    2014-01-01

    The deposition of zinc oxide has been performed by atmospheric pressure chemical vapor deposition and trends in growth rates are compared with the literature. Diethylzinc and tertiary butanol were used as the primary reactants and deposition rates above 800 nm/min were obtained. The reaction

  16. Atmospheric pressure chemical vapor deposition of ZnO: Process modeling and experiments

    NARCIS (Netherlands)

    Deelen, J. van; Illiberi, A.; Kniknie, B.; Beckers, E.H.A.; Simons, P.J.P.M.; Lankhorst, A.

    2013-01-01

    The deposition of zinc oxide has been performed by atmospheric pressure chemical vapor deposition and trends in growth rates are compared with the literature. Diethylzinc and tertiary butanol were used as the primary reactants and deposition rates above 800 nm/minwere obtained. The reaction

  17. Silicon nitride at high growth rate using hot wire chemical vapor deposition

    NARCIS (Netherlands)

    Verlaan, V.

    2008-01-01

    Amorphous silicon nitride (SiNx) is a widely studied alloy with many commercial applications. This thesis describes the application of SiNx deposited at high deposition rate using hot wire chemical vapor deposition (HWCVD) for solar cells and thin film transistors (TFTs). The deposition process of

  18. Low-level doping of nitrogen to multilayered graphene by chemical vapor deposition of methane including melamine vapor

    Science.gov (United States)

    Bandow, Shunji; Yoshida, Takahiro

    2017-12-01

    Growth of graphene doped with the low level of nitrogen is carried out on the copper foil by conventional chemical vapor deposition. Melamine is used as nitrogen source. Melamine vapor is generated by heating and carried by an argon flow (carrier flow) to a main flow of Ar including methane. Ratio of the number of molecules, melamine/methane, is controlled by changing the mixing rate of the carrier flow and the main flow. Measurements of Raman scattering, X-ray photoelectron spectroscopy, ultraviolet-visible spectroscopy and sheet resistance clarify the feature of prepared sample. At low melamine/methane ratio in the order of 10-3, quaternary N doped graphene is grown. Then the growth of pyridinic N doped graphene is going to start as increasing the melamine/methane ratio in the order of 10-2. Magnitude of the sheet resistance per one graphene layer decreases by 75% when the nitrogen is in the quaternary site, while it increases twice or more when the pyridine-like configuration increases.

  19. Chemical vapor deposition and characterization of titanium dioxide thin films

    Science.gov (United States)

    Gilmer, David Christopher

    1998-12-01

    The continued drive to decrease the size and increase the speed of micro-electronic Metal-Oxide-Semiconductor (MOS) devices is hampered by some of the properties of the SiOsb2 gate dielectric. This research has focused on the CVD of TiOsb2 thin films to replace SiOsb2 as the gate dielectric in MOS capacitors and transistors. The relationship of CVD parameters and post-deposition anneal treatments to the physical and electrical properties of thin films of TiOsb2 has been studied. Structural and electrical characterization of TiOsb2 films grown from the CVD precursors tetraisopropoxotitanium (IV) (TTIP) and TTIP plus Hsb2O is described in Chapter 3. Both types of deposition produced stoichiometric TiOsb2 films comprised of polycrystalline anatase, but the interface properties were dramatically degraded when water vapor was added. Films grown with TTIP in the presence of Hsb2O contained greater than 50% more hydrogen than films grown using only TTIP and the hydrogen content of films deposited in both wet and dry TTIP environments decreased sharply with a post deposition Osb2 anneal. A significant thickness variation of the dielectric constant was observed which could be explained by an interfacial oxide and the finite accumulation thickness. Fabricated TiOsb2 capacitors exhibited electrically equivalent SiOsb2 gate dielectric thicknesses and leakage current densities as low as 38, and 1×10sp{-8} Amp/cmsp2 respectively. Chapter 4 discusses the low temperature CVD of crystalline TiOsb2 thin films deposited using the precursor tetranitratotitanium (IV), TNT, which produces crystalline TiOsb2 films of the anatase phase in UHV-CVD at temperatures as low as 184sp°C. Fabricated TiOsb2 capacitors exhibited electrically equivalent SiOsb2 gate dielectric thicknesses and leakage current densities as low as 17, and 1×10sp{-8} Amp/cmsp2 respectively. Chapter 5 describes the results of a comparison of physical and electrical properties between TiOsb2 films grown via LPCVD using

  20. Ballistic transport in graphene grown by chemical vapor deposition

    Energy Technology Data Exchange (ETDEWEB)

    Calado, V. E.; Goswami, S.; Xu, Q.; Vandersypen, L. M. K., E-mail: l.m.k.vandersypen@tudelft.nl [Kavli Institute of Nanoscience, Delft University of Technology, 2600 GA Delft (Netherlands); Zhu, Shou-En; Janssen, G. C. A. M. [Micro and Nano Engineering Laboratory, Precision and Microsystems Engineering, Delft University of Technology, 2628 CD Delft (Netherlands); Watanabe, K.; Taniguchi, T. [Advanced Materials Laboratory, National Institute for Materials Science, 1-1 Namiki, Tsukuba 305-0044 (Japan)

    2014-01-13

    In this letter, we report the observation of ballistic transport on micron length scales in graphene synthesised by chemical vapour deposition (CVD). Transport measurements were done on Hall bar geometries in a liquid He cryostat. Using non-local measurements, we show that electrons can be ballistically directed by a magnetic field (transverse magnetic focussing) over length scales of ∼1 μm. Comparison with atomic force microscope measurements suggests a correlation between the absence of wrinkles and the presence of ballistic transport in CVD graphene.

  1. Chemical vapor deposition (CVD) of uranium for alpha spectrometry; Deposicion quimica de vapor (CVD) de uranio para espectrometria alfa

    Energy Technology Data Exchange (ETDEWEB)

    Ramirez V, M. L.; Rios M, C.; Ramirez O, J.; Davila R, J. I.; Mireles G, F., E-mail: luisalawliet@gmail.com [Universidad Autonoma de Zacatecas, Unidad Academica de Estudios Nucleares, Cipres No. 10, Fracc. La Penuela, 98068 Zacatecas (Mexico)

    2015-09-15

    The uranium determination through radiometric techniques as alpha spectrometry requires for its proper analysis, preparation methods of the source to analyze and procedures for the deposit of this on a surface or substrate. Given the characteristics of alpha particles (small penetration distance and great loss of energy during their journey or its interaction with the matter), is important to ensure that the prepared sources are thin, to avoid problems of self-absorption. The routine methods used for this are the cathodic electro deposition and the direct evaporation, among others. In this paper the use of technique of chemical vapor deposition (CVD) for the preparation of uranium sources is investigated; because by this, is possible to obtain thin films (much thinner than those resulting from electro deposition or evaporation) on a substrate and comprises reacting a precursor with a gas, which in turn serves as a carrier of the reaction products to achieve deposition. Preliminary results of the chemical vapor deposition of uranium are presented, synthesizing and using as precursor molecule the uranyl acetylacetonate, using oxygen as carrier gas for the deposition reaction on a glass substrate. The uranium films obtained were found suitable for alpha spectrometry. The variables taken into account were the precursor sublimation temperatures and deposition temperature, the reaction time and the type and flow of carrier gas. Of the investigated conditions, two depositions with encouraging results that can serve as reference for further work to improve the technique presented here were selected. Alpha spectra obtained for these depositions and the characterization of the representative samples by scanning electron microscopy and X-ray diffraction are also presented. (Author)

  2. Alcohol vapor sensing by cadmium-doped zinc oxide thick films based chemical sensor

    Science.gov (United States)

    Zargar, R. A.; Arora, M.; Chackrabarti, S.; Ahmad, S.; Kumar, J.; Hafiz, A. K.

    2016-04-01

    Cadmium-doped zinc oxide nanoparticles were derived by simple chemical co-precipitation route using zinc acetate dihydrate and cadmium acetate dihydrate as precursor materials. The thick films were casted from chemical co-precipitation route prepared nanoparticles by economic facile screen printing method. The structural, morphological, optical and electrical properties of the film were characterized relevant to alcohol vapor sensing application by powder XRD, SEM, UV-VIS and DC conductivity techniques. The response and sensitivity of alcohol (ethanol) vapor sensor are obtained from the recovery curves at optimum working temperature range from 20∘C to 50∘C. The result shows that maximum sensitivity of the sensor is observed at 25∘C operating temperature. On varying alcohol vapor concentration, minor variation in resistance has been observed. The sensing mechanism of sensor has been described in terms of physical adsorption and chemical absorption of alcohol vapors on cadmium-doped zinc oxide film surface and inside film lattice network through weak hydrogen bonding, respectively.

  3. Ultra-sensitive chemical vapor detection using micro-cavity photothermal spectroscopy.

    Science.gov (United States)

    Hu, Juejun

    2010-10-11

    In this paper, I systematically investigated Micro-Cavity PhotoThermal Spectroscopy (MC-PTS), a novel technique for ultra-sensitive detection of chemical molecular species. I first derive the photothermal enhancement factor and noise characteristics of the technique using a generic theoretical model, followed by numerical analysis of a design example using chalcogenide glass micro-disk cavities. Guidelines for sensor material selection and device design are formulated based on the theoretical insight. The numerical analysis shows that this technique features a record photothermal enhancement factor of 10(4) with respect to conventional cavity-enhanced (multi-pass) infrared absorption spectroscopy, and is capable of detecting non-preconcentrated chemical vapor molecules down to the ppt level with a moderate cavity quality factor of 10(5) and a pump laser power of 0.1 W. Such performance qualifies this technique as one of the most sensitive methods for chemical vapor spectroscopic analysis.

  4. Chemical vapor deposition of atomically thin materials for membrane dialysis applications

    Science.gov (United States)

    Kidambi, Piran; Mok, Alexander; Jang, Doojoon; Boutilier, Michael; Wang, Luda; Karnik, Rohit; Microfluidics; Nanofluidics Research Lab Team

    2015-11-01

    Atomically thin 2D materials like graphene and h-BN represent a new class of membranes materials. They offer the possibility of minimum theoretical membrane transport resistance along with the opportunity to tune pore sizes at the nanometer scale. Chemical vapor deposition has emerged as the preferable route towards scalable, cost effective synthesis of 2D materials. Here we show selective molecular transport through sub-nanometer diameter pores in graphene grown via chemical vapor deposition processes. A combination of pressure driven and diffusive transport measurements shows evidence for size selective transport behavior which can be used for separation by dialysis for applications such as desalting of biomolecular or chemical solutions. Principal Investigator

  5. Theoretical Study of A Thermoelectric-assisted Vapor Compression Cycle for Air-source Heat Pump Applications

    OpenAIRE

    Zhu, Lin; Yu, Jianlin

    2014-01-01

    In this paper, a thermoelectric-assisted vapor compression cycle (TVCC) is proposed for applications in air-source heat pump systems. Compared with the basic vapor compression cycle (BVCC), the TVCC using a thermoelectric heat exchanger (THEX) could enhance the heating capacity of the system in an energy-efficient way. To demonstrate the performance characteristics of TVCC, a case study on this cycle applied to a small air-source heat pump water heater has been conducted based on the develope...

  6. Studies in graphene growth and processing using atmospheric pressure chemical vapor deposition

    Science.gov (United States)

    Merrell, Andrew Nephi

    This dissertation focuses on graphene, a promising two-dimensional, carbon material with many favorable electronic properties. The prospect of implementing graphene into a wide variety of potential device applications is enticing, but many factors stand in the way before this goal is realized. Atmospheric pressure chemical vapor deposition (APCVD) is a graphene production method that may be compatible with large-scale growth. Motivated by the need to more fully understand APCVD growth of graphene, a system is constructed, and several studies are carried out. Specifically, a detailed study is presented which involves the effects of hydrogen and contaminant oxygen in APCVD-grown graphene. The research shows that hydrogen is an important factor to control during the cooling stage of APCVD, as it has a direct effect on the formation of oxides on the copper foil (copper is used as the catalyst for graphene growth in APCVD). It is also determined that hydrogen, as well as the reaction chamber, play an important role in the formation of SiO2 nanoparticles, which accumulate on the copper surface during graphene growth. Methods for patterning and processing graphene are also explored in this dissertation, as such methods are crucial in the realization of graphene-based devices. The method of e-beam assisted metal deposition used in conjunction with masked-CVD growth is proposed as an effective alternative to conventional processing methods such as photolithography and electron-beam lithography. The proposed methods have several advantages, which pave the way for lowering graphene/metal contact resistance, and preserving the intrinsic properties of graphene during device fabrication.

  7. Stretchable Electronic Sensors of Nanocomposite Network Films for Ultrasensitive Chemical Vapor Sensing.

    Science.gov (United States)

    Yan, Hong; Zhong, Mengjuan; Lv, Ze; Wan, Pengbo

    2017-11-01

    A stretchable, transparent, and body-attachable chemical sensor is assembled from the stretchable nanocomposite network film for ultrasensitive chemical vapor sensing. The stretchable nanocomposite network film is fabricated by in situ preparation of polyaniline/MoS2 (PANI/MoS2 ) nanocomposite in MoS2 suspension and simultaneously nanocomposite deposition onto prestrain elastomeric polydimethylsiloxane substrate. The assembled stretchable electronic sensor demonstrates ultrasensitive sensing performance as low as 50 ppb, robust sensing stability, and reliable stretchability for high-performance chemical vapor sensing. The ultrasensitive sensing performance of the stretchable electronic sensors could be ascribed to the synergistic sensing advantages of MoS2 and PANI, higher specific surface area, the reliable sensing channels of interconnected network, and the effectively exposed sensing materials. It is expected to hold great promise for assembling various flexible stretchable chemical vapor sensors with ultrasensitive sensing performance, superior sensing stability, reliable stretchability, and robust portability to be potentially integrated into wearable electronics for real-time monitoring of environment safety and human healthcare. © 2017 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  8. InAs/GaSb core-shell nanowires grown on Si substrates by metal-organic chemical vapor deposition

    Science.gov (United States)

    Ji, Xianghai; Yang, Xiaoguang; Du, Wenna; Pan, Huayong; Luo, Shuai; Ji, Haiming; Xu, Hongqi; Yang, Tao

    2017-06-01

    We report the growth of InAs/GaSb core-shell heterostructure nanowires with smooth sidewalls on Si substrates using metal-organic chemical vapor deposition (MOCVD) with no assistance from foreign catalysts. Sb adatoms were observed to strongly influence the morphology of the GaSb shell. In particular, Ga droplets form on the nanowire tips when a relatively low TMSb flow rate is used, whereas the droplets are missing and the radial growth of the GaSb is enhanced due to a reduction in the diffusion length of the Ga adatoms when the TMSb flow rate is increased. Moreover, transmission electron microscopy measurements revealed that the GaSb shell coherently grew on the InAs core without any misfit dislocations.

  9. Atmospheric pressure chemical vapor deposition (APCVD) grown bi-layer graphene transistor characteristics at high temperature

    KAUST Repository

    Qaisi, Ramy M.

    2014-05-15

    We report the characteristics of atmospheric chemical vapor deposition grown bilayer graphene transistors fabricated on ultra-scaled (10 nm) high-κ dielectric aluminum oxide (Al2O3) at elevated temperatures. We observed that the drive current increased by >400% as temperature increased from room temperature to 250 °C. Low gate leakage was maintained for prolonged exposure at 100 °C but increased significantly at temperatures >200 °C. These results provide important insights for considering chemical vapor deposition graphene on aluminum oxide for high temperature applications where low power and high frequency operation are required. © 2014 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  10. Growth mechanisms of zinc oxide and zinc sulfide films by mist chemical vapor deposition

    Science.gov (United States)

    Uno, Kazuyuki; Yamasaki, Yuichiro; Tanaka, Ichiro

    2017-01-01

    The growth mechanisms of zinc oxide and zinc sulfide films by mist chemical vapor deposition (mist-CVD) were experimentally investigated from the viewpoint of mist behaviors and chemical reactions. The proper growth model, either vaporization or the Leidenfrost model, was studied by supplying two kinds of mists with different kinds of sources, such as H2 16O and H2 18O for ZnO growth and ZnCl2 and thiourea for ZnS growth. Moreover, the origin of the oxygen atoms of ZnO was investigated using a quantitative analysis. The role of chloro complex of zinc in the growth of ZnS from aqueous solutions was also examined by systematic studies.

  11. Synthesis of Cobalt Oxides Thin Films Fractal Structures by Laser Chemical Vapor Deposition

    Directory of Open Access Journals (Sweden)

    P. Haniam

    2014-01-01

    Full Text Available Thin films of cobalt oxides (CoO and Co3O4 fractal structures have been synthesized by using laser chemical vapor deposition at room temperature and atmospheric pressure. Various factors which affect the density and crystallization of cobalt oxides fractal shapes have been examined. We show that the fractal structures can be described by diffusion-limited aggregation model and discuss a new possibility to control the fractal structures.

  12. Metal-Organic Covalent Network Chemical Vapor Deposition for Gas Separation.

    Science.gov (United States)

    Boscher, Nicolas D; Wang, Minghui; Perrotta, Alberto; Heinze, Katja; Creatore, Mariadriana; Gleason, Karen K

    2016-09-01

    The chemical vapor deposition (CVD) polymerization of metalloporphyrin building units is demonstrated to provide an easily up-scalable one-step method toward the deposition of a new class of dense and defect-free metal-organic covalent network (MOCN) layers. The resulting hyper-thin and flexible MOCN layers exhibit outstanding gas-separation performances for multiple gas pairs. © 2016 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  13. The development of chemically vapor deposited mullite coatings for the corrosion protection of SiC

    Energy Technology Data Exchange (ETDEWEB)

    Auger, M.; Hou, P.; Sengupta, A.; Basu, S.; Sarin, V. [Boston Univ., MA (United States)

    1998-05-01

    Crystalline mullite coatings have been chemically vapor deposited onto SiC substrates to enhance the corrosion and oxidation resistance of the substrate. Current research has been divided into three distinct areas: (1) Development of the deposition processing conditions for increased control over coating`s growth rate, microstructure, and morphology; (2) Analysis of the coating`s crystal structure and stability; (3) The corrosion resistance of the CVD mullite coating on SiC.

  14. Proposed Occupational Exposure Limits for Non-Carcinogenic Hanford Waste Tank Vapor Chemicals

    Energy Technology Data Exchange (ETDEWEB)

    Poet, Torka S.; Timchalk, Chuck

    2006-03-24

    A large number of volatile chemicals have been identified in the headspaces of tanks used to store mixed chemical and radioactive waste at the U.S. Department of Energy (DOE) Hanford Site, and there is concern that vapor releases from the tanks may be hazardous to workers. Contractually established occupational exposure limits (OELs) established by the Occupational Safety and Health Administration (OSHA) and American Conference of Governmental Industrial Hygienists (ACGIH) do not exist for all chemicals of interest. To address the need for worker exposure guidelines for those chemicals that lack OSHA or ACGIH OELs, a procedure for assigning Acceptable Occupational Exposure Limits (AOELs) for Hanford Site tank farm workers has been developed and applied to a selected group of 57 headspace chemicals.

  15. Rapid and highly efficient growth of graphene on copper by chemical vapor deposition of ethanol

    Energy Technology Data Exchange (ETDEWEB)

    Lisi, Nicola, E-mail: nicola.lisi@enea.it [ENEA, Materials Technology Unit, Surface Technology Laboratory, Casaccia Research Centre, Via Anguillarese 301, 00123 Rome (Italy); Buonocore, Francesco; Dikonimos, Theodoros; Leoni, Enrico [ENEA, Materials Technology Unit, Surface Technology Laboratory, Casaccia Research Centre, Via Anguillarese 301, 00123 Rome (Italy); Faggio, Giuliana; Messina, Giacomo [Dipartimento di Ingegneria dell' Informazione, delle Infrastrutture e dell' Energia Sostenibile (DIIES), Università “Mediterranea” di Reggio Calabria, 89122 Reggio Calabria (Italy); Morandi, Vittorio; Ortolani, Luca [CNR-IMM Bologna, Via Gobetti 101, 40129 Bologna (Italy); Capasso, Andrea [ENEA, Materials Technology Unit, Surface Technology Laboratory, Casaccia Research Centre, Via Anguillarese 301, 00123 Rome (Italy)

    2014-11-28

    The growth of graphene by chemical vapor deposition on metal foils is a promising technique to deliver large-area films with high electron mobility. Nowadays, the chemical vapor deposition of hydrocarbons on copper is the most investigated synthesis method, although many other carbon precursors and metal substrates are used too. Among these, ethanol is a safe and inexpensive precursor that seems to offer favorable synthesis kinetics. We explored the growth of graphene on copper from ethanol, focusing on processes of short duration (up to one min). We investigated the produced films by electron microscopy, Raman and X-ray photoemission spectroscopy. A graphene film with high crystalline quality was found to cover the entire copper catalyst substrate in just 20 s, making ethanol appear as a more efficient carbon feedstock than methane and other commonly used precursors. - Highlights: • Graphene films were grown by fast chemical vapor deposition of ethanol on copper. • High-temperature/short-time growth produced highly crystalline graphene. • The copper substrate was entirely covered by a graphene film in just 20 s. • Addition of H{sub 2} had a negligible effect on the crystalline quality.

  16. Controlled assembly of organic whispering-gallery-mode microlasers as highly sensitive chemical vapor sensors.

    Science.gov (United States)

    Gao, Miaomiao; Wei, Cong; Lin, Xianqing; Liu, Yuan; Hu, Fengqin; Zhao, Yong Sheng

    2017-03-09

    We demonstrate the fabrication of organic high Q active whispering-gallery-mode (WGM) resonators from π-conjugated polymer by a controlled emulsion-solvent-evaporation method, which can simultaneously provide optical gain and act as an effective resonant cavity. By measuring the shift of their lasing modes on exposure to organic vapor, we successfully monitored the slight concentration variation in the chemical gas. These microlaser sensors demonstrated high detection sensitivity and good signal repeatability under continuous chemical gas treatments. The results offer an effective strategy to design miniaturized optical sensors.

  17. Synthesis of single-crystalline anisotropic gold nano-crystals via chemical vapor deposition

    Science.gov (United States)

    Manna, Sohini; Kim, Jong Woo; Takahashi, Yukiko; Shpyrko, Oleg G.; Fullerton, Eric E.

    2016-05-01

    We report on a novel one-step catalyst-free, thermal chemical vapor deposition procedure to synthesize gold nanocrystals on silicon substrates. This approach yields single-crystal nanocrystals with various morphologies, such as prisms, icosahedrons, and five-fold twinned decahedrons. Our approach demonstrates that high-quality anisotropic crystals composed of fcc metals can be produced without the need for surfactants or templates. Compared with the traditional wet chemical synthesis processes, our method enables direct formation of highly pure and single crystalline nanocrystals on solid substrates which have applications in catalysis. We investigated the evolution of gold nanocrystals and established their formation mechanism.

  18. Effects of water vapor absorption on the physical and chemical stability of amorphous sodium indomethacin.

    Science.gov (United States)

    Tong, Ping; Zografi, George

    2004-03-12

    This study reports on the effects that water absorbed into amorphous sodium indomethacin (NaIMC) can have on simultaneous tendencies to crystallize to its trihydrate form and to undergo base-catalyzed hydrolysis because of the plasticizing effects of water on molecular mobility. Measurement of water vapor absorption at 30 degrees C and powder x-ray diffraction patterns as a function of relative humidity (RH) reveal that upon exposure to 21% RH, NaIMC does not crystallize over a 2-month period. Measurements of the glass transition temperature as a function of such exposure reveals a change in T(g) from 121 degrees C, dry, to 53 degrees C at 21% RH, such that T(g) at 21% RH is approximately 13 degrees C above the highest storage temperature of 40 degrees C used in the study. At 56% RH and higher, however, crystallization to the trihydrate occurs rapidly; although over the 2-month period, crystallization was never complete. Assessment of chemical degradation by high-performance liquid chromatography analysis revealed significant instability at 21% RH; whereas at higher RH, the extent of chemical degradation was reduced, reflecting the greater crystallization to the more chemically stable crystalline form. It is concluded that when amorphous forms of salts occur in solid dosage forms, the simultaneous effects of enhanced water vapor sorption on crystallization and chemical degradation must be considered, particularly when assessing solid-state chemical degradation at higher temperatures and RH (eg, 40 degrees C 75% RH).

  19. Predicting the visibility of a chemical vapor plume using schlieren optics

    Science.gov (United States)

    Bigger, Rory; Settles, Gary

    2008-11-01

    Chemicals plumes from a freely-evaporating liquid surface and from the exit of a circular pipe are considered. For the freely-evaporating case, the visibility of fourteen chemicals was tested in two schlieren optical systems. One system was a modest bench-top system and the other was a lard system of extraordinary sensitivity. Plume visibility was found to be a function of the vapor pressure and vapor refractive index. An empirical fit to the plume-visibility data, compared with the sensitivities of these systems (measured using a standard-lens method), suggests guidelines for predicting the visibility of plumes of other chemicals using other schlieren equipment. For the circular opening case, plume visibility of the same chemicals was found to be a function of plume geometry and refractive index. The peak light-ray deflections (also measured with a standard lens) caused by plumes of two different sizes were found to scale based on plume geometry. This scaling information and plume refractive index can be used to predict plume visibility for arbitrary chemicals in arbitrary systems, if the system sensitivity is known. One application of this work lies in the optical detection of plumes emitted by contraband material.

  20. Synthesis and characterization of diamond microcrystals and nanorods deposited by hot cathode direct current plasma chemical vapor deposition method

    NARCIS (Netherlands)

    Zeng, L.; Peng, H.; Wang, W.; Chen, Y.; Lei, D.; Qi, W.; Liang, J.; Zhao, J.; Kong, X.; Zhang, H.

    2008-01-01

    (111) diamond microcrystals and (100) diamond microcrystals and nanorods were synthesized on Si substrate by hot cathode direct current plasma chemical vapor deposition method. The morphology, structure, and optical properties of the diamond films were characterized by scanning electron microscopy,

  1. Sensitive chemical compass assisted by quantum criticality

    Science.gov (United States)

    Cai, C. Y.; Ai, Qing; Quan, H. T.; Sun, C. P.

    2012-02-01

    A radical-pair-based chemical reaction might be used by birds for navigation via the geomagnetic direction. The inherent physical mechanism is that the quantum coherent transition from a singlet state to triplet states of the radical pair could respond to a weak magnetic field and be sensitive to the direction of such a field; this then results in different photopigments to be sensed by the avian eyes. Here, we propose a quantum bionic setup, inspired by the avian compass, as an ultrasensitive probe of a weak magnetic field based on the quantum phase transition of the environments of the two electrons in the radical pair. We prove that the yield of the chemical products via recombination from the singlet state is determined by the Loschmidt echo of the environments with interacting nuclear spins. Thus quantum criticality of environments could enhance the sensitivity of detection of weak magnetic fields.

  2. Radical-assisted chemical doping for chemically derived graphene

    Science.gov (United States)

    Ishikawa, Ryousuke; Ko, Pil Ju; Bando, Masashi; Kurokawa, Yasuyoshi; Sandhu, Adarsh; Konagai, Makoto

    2013-12-01

    Carrier doping of graphene is one of the most challenging issues that needs to be solved to enable its use in various applications. We developed a carrier doping method using radical-assisted conjugated organic molecules in the liquid phase and demonstrated all-wet fabrication process of doped graphene films without any vacuum process. Charge transfer interaction between graphene and dopant molecules was directly investigated by spectroscopic studies. The resistivity of the doped graphene films was drastically decreased by two orders of magnitude. The resistivity was improved by not only carrier doping but the improvement in adhesion of doped graphene flakes. First-principles calculation supported the model of our doping mechanism.

  3. Sequential microcontroller-based control for a chemical vapor deposition process

    Directory of Open Access Journals (Sweden)

    Edgar Serrano Pérez

    2017-12-01

    Full Text Available A cost-effective direct liquid injection system is developed for a chemical vapor deposition process using a microcontroller. The precursor gas phase is controlled by the precise sequential injection of a liquid precursor solution to a vaporizing chamber prior deposition. The electronic control system allows the human–machine interface through a LCD display and a keypad matrix. The core of the electronic system is based on an electro mechanical injector operated in time and frequency as a sequential control system by a popular PIC16F877A chip. The software has been developed in the BASIC language and it can be easily modified through an ICSP programmer for different sequential automatized routines. The injection calibration test has proven the linearity of the injection control system for different operation parameters. The results reported the sequential injection MOCVD deposition of alumina thin film.

  4. Continuous growth of single-wall carbon nanotubes using chemical vapor deposition

    Energy Technology Data Exchange (ETDEWEB)

    Grigorian, Leonid; Hornyak, Louis; Dillon, Anne C; Heben, Michael J

    2014-09-23

    The invention relates to a chemical vapor deposition process for the continuous growth of a carbon single-wall nanotube where a carbon-containing gas composition is contacted with a porous membrane and decomposed in the presence of a catalyst to grow single-wall carbon nanotube material. A pressure differential exists across the porous membrane such that the pressure on one side of the membrane is less than that on the other side of the membrane. The single-wall carbon nanotube growth may occur predominately on the low-pressure side of the membrane or, in a different embodiment of the invention, may occur predominately in between the catalyst and the membrane. The invention also relates to an apparatus used with the carbon vapor deposition process.

  5. Chemical vapor deposition of carbon nanotubes: a review on growth mechanism and mass production.

    Science.gov (United States)

    Kumar, Mukul; Ando, Yoshinori

    2010-06-01

    This review article deals with the growth mechanism and mass production of carbon nanotubes (CNTs) by chemical vapor deposition (CVD). Different aspects of CNT synthesis and growth mechanism are reviewed in the light of latest progresses and understandings in the field. Materials aspects such as the roles of hydrocarbon, catalyst and catalyst support are discussed. Many new catalysts and new carbon sources are described. Growth-control aspects such as the effects of temperature, vapor pressure and catalyst concentration on CNT diameter distribution and single- or multi-wall formation are explained. Latest reports of metal-catalyst-free CNT growth are considered. The mass-production aspect is discussed from the perspective of a sustainable CNT technology. Existing problems and challenges of the process are addressed with future directions.

  6. Reactive Chemical Vapor Deposition Method as New Approach for Obtaining Electroluminescent Thin Film Materials

    Directory of Open Access Journals (Sweden)

    Valentina V. Utochnikova

    2012-01-01

    Full Text Available The new reactive chemical vapor deposition (RCVD method has been proposed for thin film deposition of luminescent nonvolatile lanthanide aromatic carboxylates. This method is based on metathesis reaction between the vapors of volatile lanthanide dipivaloylmethanate (Ln(dpm3 and carboxylic acid (HCarb orH2Carb′ and was successfully used in case of HCarb. Advantages of the method were demonstrated on example of terbium benzoate (Tb(bz3 and o-phenoxybenzoate thin films, and Tb(bz3 thin films were successfully examined in the OLED with the following structure glass/ITO/PEDOT:PSS/TPD/Tb(bz3/Ca/Al. Electroluminescence spectra of Tb(bz3 showed only typical luminescent bands, originated from transitions of the terbium ion. Method peculiarities for deposition of compounds of dibasic acids H2Carb′ are established on example of terbium and europium terephtalates and europium 2,6-naphtalenedicarboxylate.

  7. Continuous growth of single-wall carbon nanotubes using chemical vapor deposition

    Science.gov (United States)

    Grigorian, Leonid [Raymond, OH; Hornyak, Louis [Evergreen, CO; Dillon, Anne C [Boulder, CO; Heben, Michael J [Denver, CO

    2008-10-07

    The invention relates to a chemical vapor deposition process for the continuous growth of a carbon single-wall nanotube where a carbon-containing gas composition is contacted with a porous membrane and decomposed in the presence of a catalyst to grow single-wall carbon nanotube material. A pressure differential exists across the porous membrane such that the pressure on one side of the membrane is less than that on the other side of the membrane. The single-wall carbon nanotube growth may occur predominately on the low-pressure side of the membrane or, in a different embodiment of the invention, may occur predominately in between the catalyst and the membrane. The invention also relates to an apparatus used with the carbon vapor deposition process.

  8. Formation of SiC thin films by chemical vapor deposition with vinylsilane precursor

    Science.gov (United States)

    Doi, Takuma; Takeuchi, Wakana; Jin, Yong; Kokubun, Hiroshi; Yasuhara, Shigeo; Nakatsuka, Osamu; Zaima, Shigeaki

    2018-01-01

    We have examined the formation of SiC thin films by chemical vapor deposition (CVD) using vinylsilane and investigated the chemical bonding state and crystallinity of the prepared SiC thin films. We achieved the formation of a Si–H–less SiC film at growth temperatures as low as 600 °C. Also, we investigated the in situ doping effect of N by the incorporation of NH3 gas in the SiC growth and demonstrated that the chemical composition of N in SiC thin films was controlled by adjusting the NH3 flow rate. In addition, we examined the growth of SiC thin films on a Cu substrate and achieved the formation of a SiC thin film while avoiding any significant reaction between SiC and Cu at a growth temperature of 700 °C.

  9. Chemical Species in the Vapor Phase of Hanford Double-Shell Tanks: Potential Impacts on Waste Tank Corrosion Processes

    Energy Technology Data Exchange (ETDEWEB)

    Felmy, Andrew R.; Qafoku, Odeta; Arey, Bruce W.; Boomer, Kayle D.

    2010-09-22

    The presence of corrosive and inhibiting chemicals on the tank walls in the vapor space, arising from the waste supernatant, dictate the type and degree of corrosion that occurs there. An understanding of how waste chemicals are transported to the walls and the affect on vapor species from changing supernatant chemistry (e.g., pH, etc.), are basic to the evaluation of risks and impacts of waste changes on vapor space corrosion (VSC). In order to address these issues the expert panel workshop on double-shell tank (DST) vapor space corrosion testing (RPP-RPT-31129) participants made several recommendations on the future data and modeling needs in the area of DST corrosion. In particular, the drying of vapor phase condensates or supernatants can form salt or other deposits at the carbon steel interface resulting in a chemical composition at the near surface substantially different from that observed directly in the condensates or the supernatants. As a result, over the past three years chemical modeling and experimental studies have been performed on DST supernatants and condensates to predict the changes in chemical composition that might occur as condensates or supernatants equilibrate with the vapor space species and dry at the carbon steel surface. The experimental studies included research on both the chemical changes that occurred as the supernatants dried as well as research on how these chemical changes impact the corrosion of tank steels. The chemical modeling and associated experimental studies were performed at the Pacific Northwest National Laboratory (PNNL) and the research on tank steel corrosion at the Savannah River National Laboratory (SRNL). This report presents a summary of the research conducted at PNNL with special emphasis on the most recent studies conducted in FY10. An overall summary of the project results as well as their broader implications for vapor space corrosion of the DST’s is given at the end of this report.

  10. Chemical vapor deposition techniques and related methods for manufacturing microminiature thermionic converters

    Energy Technology Data Exchange (ETDEWEB)

    King, Donald B. (Albuquerque, NM); Sadwick, Laurence P. (Salt Lake City, UT); Wernsman, Bernard R. (Clairton, PA)

    2002-06-25

    Methods of manufacturing microminiature thermionic converters (MTCs) having high energy-conversion efficiencies and variable operating temperatures using MEMS manufacturing techniques including chemical vapor deposition. The MTCs made using the methods of the invention incorporate cathode to anode spacing of about 1 micron or less and use cathode and anode materials having work functions ranging from about 1 eV to about 3 eV. The MTCs also exhibit maximum efficiencies of just under 30%, and thousands of the devices can be fabricated at modest costs.

  11. Time variant layer control in atmospheric pressure chemical vapor deposition based growth of graphene

    KAUST Repository

    Qaisi, Ramy M.

    2013-04-01

    Graphene is a semi-metallic, transparent, atomic crystal structure material which is promising for its high mobility, strength and transparency - potentially applicable for radio frequency (RF) circuitry and energy harvesting and storage applications. Uniform (same number of layers), continuous (not torn or discontinuous), large area (100 mm to 200 mm wafer scale), low-cost, reliable growth are the first hand challenges for its commercialization prospect. We show a time variant uniform (layer control) growth of bi- to multi-layer graphene using atmospheric chemical vapor deposition system. We use Raman spectroscopy for physical characterization supported by electrical property analysis. © 2013 IEEE.

  12. Influence of alcohol on grain growth of tin oxide in chemical vapor deposition

    Energy Technology Data Exchange (ETDEWEB)

    Matsui, Yuji [New Products Development Center, Technology Development Division, Japan/Asia Pacific General Division Automotive Glass Company, Asahi Glass Co. Ltd., 426-1 Sumida, Aikawa-machi, Aiko-gun, Kanagawa 243-0301 (Japan)]. E-mail: yuuji-matsui@agc.co.jp; Mitsuhashi, Michio [New Products Development Center, Technology Development Division, Japan/Asia Pacific General Division Automotive Glass Company, Asahi Glass Co. Ltd., 426-1 Sumida, Aikawa-machi, Aiko-gun, Kanagawa 243-0301 (Japan); Yamamoto, Yuichi [Research Center, Asahi Glass Co. Ltd., 1150 Hazawa-machi, Kanagawa-ku, Yokohama, Kanagawa 221-8755 (Japan); Higashi, Seiji [Research Center, Asahi Glass Co. Ltd., 1150 Hazawa-machi, Kanagawa-ku, Yokohama, Kanagawa 221-8755 (Japan)

    2007-01-22

    Morphologies of tin oxide micro-grains in the early stage of film growth were analyzed for films deposited by chemical vapor deposition using tin chloride as a source material. Atomic force microscopy observations revealed increased micro-grain density and decreased size by adding methanol into the reaction system, but X-ray photoelectron spectroscopy analyses suggested that the total deposited volume was unchanged. The relative amount of chlorine contamination at the bottom of alcohol-added films increased in the order of isopropyl alcohol < ethanol < methanol. A model of chlorine desorption through reaction with alcohol, which occurred in the early stage of film growth, can explain the results.

  13. Raman and optical characterization of multilayer turbostratic graphene grown via chemical vapor deposition

    OpenAIRE

    Lenski, Daniel R.; Fuhrer, Michael S.

    2010-01-01

    We synthesize large-area graphene via atmospheric-pressure (AP) chemical vapor deposition (CVD) on copper, and transfer to SiO2 wafers. In contrast to low-pressure (LP) CVD on copper, optical contrast and atomic force microscopy measurements show AP-CVD graphene contains significant multi-layer areas. Raman spectroscopy always shows a single Lorentzian 2D peak, however systematic differences are observed in the 2D peak energy, width, and intensity for single- and multi-layer regions. We concl...

  14. Porous tungsten prepared by atmospheric-pressure chemical vapor deposition with WF6 and its characterization

    Science.gov (United States)

    Li, Ying; Yu, Xiaodong; Tan, Chengwen; Wang, Fuchi; Ma, Honglei; Yue, Jintao

    2017-05-01

    Porous tungsten (W) is used in aeronautic and aerospace engineering, power electronics field and metallurgical industry. In this study, porous W with 98wt% W was prepared on a carbon foam substrate by atmospheric-pressure chemical vapor deposition (CVD) with tungsten fluoride (WF6) as the precursor. The porous W with 78.1346% porosity displayed a pure α-W phase and the uniform surface. The mode pore diameter of porous W is 208.0 µm. In a compression test, the fracture strength of porous W is 20.3 MPa.

  15. Chemical Vapor Synthesis of Titanium Aluminides by Reaction of Aluminum Subchloride and Titanium Tetrachloride

    Science.gov (United States)

    Zakirov, Roman A.; Parfenov, Oleg G.; Solovyov, Leonid A.

    2017-11-01

    A new process for developing titanium aluminides (TiAls) using chemical vapor synthesis was investigated in a laboratory experiment. Aluminum subchloride (AlCl) was used as the reducing agent in the reaction with TiCl4 and the source of aluminum for Ti-Al alloy. Two types of products, with large crystals and fine particles, were fabricated. The large crystals were determined to be TiAl, with small amounts of Ti and Ti3Al phases. The composition of fine particles, on the other hand, varied in wide range.

  16. Transmission electron microscopy studies of YBCO coated conductor deposited using multiple-stage chemical vapor deposition

    Energy Technology Data Exchange (ETDEWEB)

    Sasaki, H. [Japan Fine Ceramics Center, Material Research and Development Laboratory, 2-4-1, Mutsuno, Atsuta-ku, Nagoya, Aichi 456-8587 (Japan)]. E-mail: hisasaki@jfcc.or.jp; Kato, T. [Japan Fine Ceramics Center, Material Research and Development Laboratory, 2-4-1, Mutsuno, Atsuta-ku, Nagoya, Aichi 456-8587 (Japan); Sasaki, Y. [Japan Fine Ceramics Center, Material Research and Development Laboratory, 2-4-1, Mutsuno, Atsuta-ku, Nagoya, Aichi 456-8587 (Japan); Hirayama, T. [Japan Fine Ceramics Center, Material Research and Development Laboratory, 2-4-1, Mutsuno, Atsuta-ku, Nagoya, Aichi 456-8587 (Japan); Kashima, N. [Electric Power Research and Development Center, Chubu Electric Power Co., Inc., 20-1, Kitasekiyama, Ohdaka-cho, Midori-ku, Nagoya, Aichi 459-8522 (Japan); Nagaya, S. [Electric Power Research and Development Center, Chubu Electric Power Co., Inc., 20-1, Kitasekiyama, Ohdaka-cho, Midori-ku, Nagoya, Aichi 459-8522 (Japan); Izumi, T. [Superconductivity Research Center, 1-10-13, Shinonome, Koto-ku, Tokyo 135-0062 (Japan); Shiohara, Y. [Superconductivity Research Center, 1-10-13, Shinonome, Koto-ku, Tokyo 135-0062 (Japan)

    2005-10-01

    A YBCO film was deposited on Hastelloy tape with highly oriented CeO{sub 2}/Gd{sub 2}Zr{sub 2}O{sub 7} multilayer using multiple-stage chemical vapor deposition. The microstructures of the YBCO coated conductor were examined in detail using transmission electron microscopy. Analysis indicated a YBCO film about 1 {mu}m thick was deposited and consisted mainly of c-axis oriented grains. However, a-axis oriented grains were also observed in the YBCO film, and these a-axis oriented grains grew larger with increasing thickness of the YBCO film.

  17. ZnO nanowall network grown by chemical vapor deposition technique

    Science.gov (United States)

    Mukherjee, Amrita; Dhar, Subhabrata

    2015-06-01

    Network of wedge shaped ZnO nanowalls are grown on c-sapphire by Chemical Vapor Deposition (CVD) technique. Structural studies using x-ray diffraction show much better crystallinity in the nanowall sample as compared to the continuous film. Moreover, the defect related broad green luminescence is found to be suppressed in the nanowall sample. The low temperature photoluminescence study also suggests the quantum confinement of carriers in nanowall sample. Electrical studies performed on the nanowalls show higher conductivity, which has been explained in terms of the reduction of scattering cross-section as a result of 1D quantum confinement of carriers on the tip of the nanowalls.

  18. ZnO nanowall network grown by chemical vapor deposition technique

    Energy Technology Data Exchange (ETDEWEB)

    Mukherjee, Amrita, E-mail: but.then.perhaps@gmail.com; Dhar, Subhabrata [Department of Physics, Indian Institute of Technology Bombay, Powai, Mumbai-400076 (India)

    2015-06-24

    Network of wedge shaped ZnO nanowalls are grown on c-sapphire by Chemical Vapor Deposition (CVD) technique. Structural studies using x-ray diffraction show much better crystallinity in the nanowall sample as compared to the continuous film. Moreover, the defect related broad green luminescence is found to be suppressed in the nanowall sample. The low temperature photoluminescence study also suggests the quantum confinement of carriers in nanowall sample. Electrical studies performed on the nanowalls show higher conductivity, which has been explained in terms of the reduction of scattering cross-section as a result of 1D quantum confinement of carriers on the tip of the nanowalls.

  19. Fabrication of GaAs-Mo-Si structures by metalorganic chemical vapor deposition and laser annealing

    Science.gov (United States)

    Okakmoto, K.; Imai, T.

    1983-06-01

    After depositing undoped polycrystalline GaAs layers on Mo layers by means of metal-organic chemical vapor deposition, the samples were immersed in SnCl2-dissolved methanol in order to undergo annealing through irradiation by a Q-switched ruby laser. Recrystallization and doping of the GaAs layers was carried out succesfully, and Schottky characteristics were observed between the top GaAs layer and the Mo layer underneath. The barrier height was measured to be 0.53 eV.

  20. Characteristics of epitaxial garnets grown by CVD using single metal alloy sources. [Chemical Vapor Deposition

    Science.gov (United States)

    Besser, P. J.; Hamilton, T. N.; Mee, J. E.; Stermer, R. L.

    1974-01-01

    Single metal alloys have been explored as the cation source in the chemical vapor deposition (CVD) of iron garnets. Growth of good quality single crystal garnet films containing as many as five different cations has been achieved over a wide range of deposition conditions. The relationship of film composition to alloy compositions and deposition conditions has been determined for several materials. By proper choice of the alloy composition and the deposition conditions, uncrazed deposits were grown on (111) gadolinium gallium garnet (GGG) substrates. Data on physical, magnetic and optical properties of representative films is presented and discussed.

  1. Fabrication and characterization of a planar gradient-index, plasma-enhanced chemical vapor deposition lens.

    Science.gov (United States)

    Beltrami, D R; Love, J D; Durandet, A; Samo, A; Cogswell, C J

    1997-10-01

    A thin, one-dimensional, gradient-index slab lens with a parabolic profile was designed and fabricated in fluorine-doped silica by use of plasma-enhanced chemical vapor deposition in a Helicon plasma reactor. The refractive-index profile of the fabricated lens was determined by the application of an inversion technique to the values of modal effective index measured with a prism coupler. The periodic refocusing property of the lens and the independence of the wavelength were measured with the fluorescence of a specially doped, thin polymer layer spin-coated onto the surface of the lens.

  2. Preparation of Bismuth Titanate Films by Electron Cyclotron Resonance Plasma Sputtering-Chemical Vapor Deposition

    OpenAIRE

    Masumoto, H.; Hirai, T.

    1995-01-01

    Bismuth titanate (Bi4Ti3O12 : BIT) thin films were prepared on the Pt courted MgO(100) substrate by electron cyclotron resonance plasma sputtering-chemical vapor deposition (ECR plasma sputtering-CVD). Bi2O3 was used as a sputtering target and tetra-isopropoxy-titanium [Ti(i-C3H7O)4] as a CVD source. The composition of films was controlled by changing RF power (PRF) of Bi2O3 target and Ti source temperature (TTi). The stoichiometric BIT film was prepared under the condition of PRF=500W, TTi=6...

  3. Remote microwave plasma enhanced chemical vapor deposition (RMPECVD) of silica and alumina films

    Energy Technology Data Exchange (ETDEWEB)

    Desmaison, J.; Hidalgo, H.; Tristant, P.; Naudin, F.; Merle, D. [Limoges Univ. (France). Lab. de Sciences des Procedes Ceramiques et Traitements de Surface

    2002-07-01

    Alumina or silica are attractive as insulation and protective layers for sensitive substrates. Oxides are deposited by remote microwave plasma enhanced chemical vapor deposition (RMPECVD) using an oxygen plasma and a mixture of precursor gas silane or trimethylaluminum (TMA) diluted in argon, respectively for silica and alumina, injected in the afterglow. This technique allows to deposit films of SiO{sub 2} and Al{sub 2}O{sub 3} with satisfactory characteristics (density, etch rate, stoichiometry) and high deposition rate. The comparison of the best deposition conditions reveals that in case of alumina higher temperatures and lower pressures are needed. (orig.)

  4. MgB2 ultrathin films fabricated by hybrid physical chemical vapor deposition and ion milling

    Directory of Open Access Journals (Sweden)

    Narendra Acharya

    2016-08-01

    Full Text Available In this letter, we report on the structural and transport measurements of ultrathin MgB2 films grown by hybrid physical-chemical vapor deposition followed by low incident angle Ar ion milling. The ultrathin films as thin as 1.8 nm, or 6 unit cells, exhibit excellent superconducting properties such as high critical temperature (Tc and high critical current density (Jc. The results show the great potential of these ultrathin films for superconducting devices and present a possibility to explore superconductivity in MgB2 at the 2D limit.

  5. Growth and characterization of Bi2Se3 crystals by chemical vapor transport

    Directory of Open Access Journals (Sweden)

    W. H. Jiao

    2012-06-01

    Full Text Available Regularly-shaped high-quality Bi2Se3 crystals were grown by a chemical vapor transport using iodine as the transport agent. In addition to exhibiting a characteristic Dirac cone for a topological insulator, the Bi2Se3 crystals show some outstanding properties including additional crystallographic surfaces, large residual resistance ratio (∼10, and high mobility (∼8000 cm2·V−1·s−1. The low-temperature resistivity abnormally increases with applying pressures up to 1.7 GPa, and no superconductivity was observed down to 0.4 K.

  6. Diamond-coated fiber Bragg grating through the hot filament chemical vapor process for chemical durability improvement.

    Science.gov (United States)

    Alberto, Nélia; José Kalinowski, Hypolito; Neto, Victor; Nogueira, Rogério

    2017-02-20

    In recent years, the coating of fiber Bragg gratings (FBGs) with a specific material has opened up the possibility to broaden the limits of applicability of this technology. Diamond has a set of properties that makes it an attractive candidate to protect the optical fiber against chemically harsh environments, whose sensing is also a great challenge. One of the most used techniques to obtain these coatings is through the hot filament chemical vapor deposition (HFCVD); in this process, the temperature reaches, typically, around 850°C-900°C. In this work, the regeneration of a seed FBG during its coating with a nanocrystalline diamond thin film through the HFCVD process is presented. Simultaneously, the thermal monitoring of the process was also performed using the same grating. The resistance test in a corrosive medium reveals an improvement on the durability of the sensing properties of the diamond-coated FBG compared with an uncoated FBG, foreseeing a vast range of applications.

  7. Significance of vapor phase chemical reactions on CVD rates predicted by chemically frozen and local thermochemical equilibrium boundary layer theories

    Science.gov (United States)

    Gokoglu, Suleyman A.

    1988-01-01

    This paper investigates the role played by vapor-phase chemical reactions on CVD rates by comparing the results of two extreme theories developed to predict CVD mass transport rates in the absence of interfacial kinetic barrier: one based on chemically frozen boundary layer and the other based on local thermochemical equilibrium. Both theories consider laminar convective-diffusion boundary layers at high Reynolds numbers and include thermal (Soret) diffusion and variable property effects. As an example, Na2SO4 deposition was studied. It was found that gas phase reactions have no important role on Na2SO4 deposition rates and on the predictions of the theories. The implications of the predictions of the two theories to other CVD systems are discussed.

  8. Low temperature carrier transport study of monolayer MoS{sub 2} field effect transistors prepared by chemical vapor deposition under an atmospheric pressure

    Energy Technology Data Exchange (ETDEWEB)

    Liu, Xinke, E-mail: xkliu@szu.edu.cn, E-mail: wujing026@gmail.com; He, Jiazhu; Tang, Dan; Lu, Youming; Zhu, Deliang; Liu, Wenjun; Cao, Peijiang; Han, Sun [College of Materials Science and Engineering, Shenzhen Engineering Laboratory for Advanced Technology of Ceramics, Nanshan District Key Lab for Biopolymer and Safety Evaluation, Shenzhen University, 3688 Nanhai Ave, Shenzhen 518060 (China); Liu, Qiang; Wen, Jiao; Yu, Wenjie [State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, CAS, 865 Chang Ning Road, Shanghai 200050 (China); Liu, Wenjun [State Key Laboratory of ASIC and System, Department of Microelectronics, Fudan University, 220 Handan Road, Shanghai 200433 (China); Wu, Jing, E-mail: xkliu@szu.edu.cn, E-mail: wujing026@gmail.com [Department of Physics, National University of Singapore, 21 Lower Kent Ridge Road, 117576 Singapore (Singapore); He, Zhubing [Department of Materials Science and Engineering, South University of Science and Technology of China, 1088 Xueyuan Road, Shenzhen 518055 (China); Ang, Kah-Wee [Department of Electrical and Computer Engineering, National University of Singapore, 4 Engineering Drive 3, 117583 Singapore (Singapore)

    2015-09-28

    Large size monolayer Molybdenum disulphide (MoS{sub 2}) was successfully grown by chemical vapor deposition method under an atmospheric pressure. The electrical transport properties of the fabricated back-gate monolayer MoS{sub 2} field effect transistors (FETs) were investigated under low temperatures; a peak field effect mobility of 59 cm{sup 2}V{sup −1}s{sup −1} was achieved. With the assist of Raman measurement under low temperature, this work identified the mobility limiting factor for the monolayer MoS{sub 2} FETs: homopolar phonon scattering under low temperature and electron-polar optical phonon scattering at room temperature.

  9. Aerosol assisted chemical vapour deposition of germanium thin ...

    Indian Academy of Sciences (India)

    Diethyl germanium bis-picolinate, [Et2Ge(O2CC5H4N)2], and trimethyl germanium quinaldate, [Me3Ge(O2CC9H6N)], have been used as precursors for deposition of thin films of germanium by aerosol assisted chemical vapour deposition (AACVD). The thermogravimetric analysis revealed complete volatilization of ...

  10. Low-Pressure Vapor-Assisted Solution Process for Thiocyanate-Based Pseudohalide Perovskite Solar Cells.

    Science.gov (United States)

    Chiang, Yu-Hsien; Cheng, Hsin-Min; Li, Ming-Hsien; Guo, Tzung-Fang; Chen, Peter

    2016-09-22

    In this report, we fabricated thiocyanate-based perovskite solar cells with low-pressure vapor-assisted solution process (LP-VASP) method. Photovoltaic performances are evaluated with detailed materials characterizations. Scanning electron microscopy images show that SCN-based perovskite films fabricated using LP-VASP have long-range uniform morphology and large grain sizes up to 1 μm. The XRD and Raman spectra were employed to observe the characteristic peaks for both SCN-based and pure CH3 NH3 PbI3 perovskite. We observed that the Pb(SCN)2 film transformed to PbI2 before the formation of perovskite film. X-ray photoemission spectra (XPS) show that only a small amount of S remained in the film. Using LP-VASP method, we fabricated SCN-based perovskite solar cells and achieved a power conversion efficiency of 12.72 %. It is worth noting that the price of Pb(SCN)2 is only 4 % of PbI2 . These results demonstrate that pseudo-halide perovskites are promising materials for fabricating low-cost perovskite solar cells. © 2016 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  11. Chemical sensing of copper phthalocyanine sol-gel glass through organic vapors

    Energy Technology Data Exchange (ETDEWEB)

    Ridhi, R.; Gawri, Isha; Abbas, Saeed J.; Saini, G. S. S.; Tripathi, S. K. [Department of Physics, Center of Advanced Study in Physics, Panjab University, Chandigarh-160 014 (INDIA) Fax: +91-172-2783336; Tel.:+91-172-2544362 (India)

    2015-05-15

    The sensitivities of metallophthalocyanine to vapor phase electron donors has gained significance in many areas and disciplines due to their sensing properties and ease of operation. In the present study the interaction mechanism of organic vapors in Copper Phthalocyanine (CuPc) sol-gel glass has been studied. The interaction mechanism is affected by many factors like morphology, electrical or optical properties of film. CuPc sol-gel glass has been synthesized using chemical route sol-gel method. Its structural characterization was conducted using XRD and the amorphous nature of the silicate glass was observed with characteristic α polymorph phase of CuPc at around 6.64° with 13.30Å interplanar spacing. The size of the particle as determined using Debbye Scherre’s formula comes out around 15.5 nm. The presence of α phase of CuPc was confirmed using FTIR with the appearance of crystal parameter marker band at 787 cm-1. Apart from this A2u and Eu symmetry bands of CuPc have also been observed. The UV absorption spectrum of CuPc exhibits absorption peaks owing to π→ π* and n→ π* transitions. A blue shift in the prepared CuPc glass has been observed as compared to the dopant CuPc salt indicating increase of band gap. A split in B (Soret) band and Q band appears as observed with the help of Lorentzian fitting. CuPc sol gel glass has been exposed with chemical vapors of Methanol, Benzene and Bromine individually and the electrical measurements have been carried out. These measurements show the variation in conductivity and the interaction mechanism has been analyzed.

  12. Laterally Stitched Heterostructures of Transition Metal Dichalcogenide: Chemical Vapor Deposition Growth on Lithographically Patterned Area

    KAUST Repository

    Li, Henan

    2016-10-31

    Two-dimensional transition metal dichalcogenides (TMDCs) have shown great promise in electronics and optoelectronics due to their unique electrical and optical properties. Heterostructured TMDC layers such as the laterally stitched TMDCs offer the advantages of better electronic contact and easier band offset tuning. Here, we demonstrate a photoresist-free focused ion beam (FIB) method to pattern as-grown TMDC monolayers by chemical vapor deposition, where the exposed edges from FIB etching serve as the seeds for growing a second TMDC material to form desired lateral heterostructures with arbitrary layouts. The proposed lithographic and growth processes offer better controllability for fabrication of the TMDC heterostrucuture, which enables the construction of devices based on heterostructural monolayers. © 2016 American Chemical Society.

  13. Numerical study of a three-dimensional chemical vapor deposition reactor with detailed chemistry

    Energy Technology Data Exchange (ETDEWEB)

    Ern, A. [CERMICS-ENPC, Noisy-le-Grand (France); Giovangigli, V. [Encole Polytechnique, Palaiseau (France); Smooke, M.D. [Yale Univ., New Haven, CT (United States)

    1996-06-01

    A numerical model of a three-dimensional, horizontal channel, chemical vapor deposition reactor is presented in order to study gallium arenide growth from trimethylgallium and arsine source reactants. Fluid flow and temperature predictions inside the reactor are obtained using the vorticity-velocity form of the three-dimensional, study-state Navier-Stokes equations coupled with a detailed energy balance equation inside the reactor and on its walls. Detailed gas phase and surface chemistry mechanisms are used to predict the chemical species profiles inside the reactor, the growth rate distribution on the substrate, and the level of carbon incorporation into the grown layer. The species diffusion velocities are written using the recent theory of iterative transport algorithms and account for both thermal diffusion and multicomponent diffusion processes. The influence of susceptor temperature and inlet composition on growth rate and carbon incorporation is found to agree well with previous numerical and experimental work. 46 refs., 15 figs., 3 tabs.

  14. Polymer Thin Films and Surface Modification by Chemical Vapor Deposition: Recent Progress.

    Science.gov (United States)

    Chen, Nan; Kim, Do Han; Kovacik, Peter; Sojoudi, Hossein; Wang, Minghui; Gleason, Karen K

    2016-06-07

    Chemical vapor deposition (CVD) polymerization uses vapor phase monomeric reactants to synthesize organic thin films directly on substrates. These thin films are desirable as conformal surface engineering materials and functional layers. The facile tunability of the films and their surface properties allow successful integration of CVD thin films into prototypes for applications in surface modification, device fabrication, and protective films. CVD polymers also bridge microfabrication technology with chemical and biological systems. Robust coatings can be achieved via CVD methods as antifouling, anti-icing, and antihydrate surfaces, as well as stimuli-responsive or biocompatible polymers and novel nanostructures. Use of low-energy input, modest vacuum, and room-temperature substrates renders CVD polymerization compatible with thermally sensitive substrates and devices. Compared with solution-based methods, CVD is particularly useful for insoluble materials, such as electrically conductive polymers and controllably crosslinked networks, and has the potential to reduce environmental, health, and safety impacts associated with solvents. This review discusses the relevant background and selected applications of recent advances by two methods that display and use the high retention of the organic functional groups from their respective monomers, initiated CVD (iCVD) and oxidative CVD (oCVD) polymerization.

  15. Suitable alkaline for graphene peeling grown on metallic catalysts using chemical vapor deposition

    Science.gov (United States)

    Karamat, S.; Sonuşen, S.; Çelik, Ü.; Uysallı, Y.; Oral, A.

    2016-04-01

    In chemical vapor deposition, the higher growth temperature roughens the surface of the metal catalyst and a delicate method is necessary for the transfer of graphene from metal catalyst to the desired substrates. In this work, we grow graphene on Pt and Cu foil via ambient pressure chemical vapor deposition (AP-CVD) method and further alkaline water electrolysis was used to peel off graphene from the metallic catalyst. We used different electrolytes i.e., sodium hydroxide (NaOH), potassium hydroxide (KOH), lithium hydroxide (LiOH) and barium hydroxide Ba(OH)2 for electrolysis, hydrogen bubbles evolved at the Pt cathode (graphene/Pt/PMMA stack) and as a result graphene layer peeled off from the substrate without damage. The peeling time for KOH and LiOH was ∼6 min and for NaOH and Ba(OH)2 it was ∼15 min. KOH and LiOH peeled off graphene very efficiently as compared to NaOH and Ba(OH)2 from the Pt electrode. In case of copper, the peeling time is ∼3-5 min. Different characterizations like optical microscopy, Raman spectroscopy, X-ray photoelectron spectroscopy and atomic force microscopy were done to analyze the as grown and transferred graphene samples.

  16. Low temperature deposition of crystalline silicon on glass by hot wire chemical vapor deposition

    Science.gov (United States)

    Chung, Yung-Bin; Park, Hyung-Ki; Lee, Dong-Kwon; Jo, Wook; Song, Jean-Ho; Lee, Sang-Hoon; Hwang, Nong-Moon

    2011-07-01

    Although the deposition of crystalline silicon on a glass substrate has been pursued using hot wire chemical vapor deposition or plasma enhanced chemical vapor deposition for applications in flat panel displays and solar cells, the process has been only partly successful because of the inevitable formation of an amorphous incubation layer on a glass substrate. Currently, the crystalline silicon films are prepared by depositing an amorphous silicon film on a glass substrate and then crystallizing it by excimer laser annealing (ELA), metal induced crystallization or rapid thermal annealing (RTA). Here we report a new process, which can remove the amorphous incubation layer and thereby deposit crystalline silicon directly on glass using HCl. The intrinsic crystalline silicon film has a conductivity of 3.7×10 -5 Scm -1 and the n-type doped crystalline silicon film has the Hall mobility of 15.8 cm 2V -1 s -1, whose values are comparable to those prepared by ELA and RTA, respectively.

  17. Development of Single Crystal Chemical Vapor Deposition Diamonds for Detector Applications

    Energy Technology Data Exchange (ETDEWEB)

    Kagan, Harris; Kass, Richard; Gan, K. K.

    2014-01-23

    With the LHC upgrades in 2013, and further LHC upgrades scheduled in 2018, most LHC experiments are planning for detector upgrades which require more radiation hard technologies than presently available. At present all LHC experiments now have some form of diamond detector. As a result Chemical Vapor Deposition (CVD) diamond has now been used extensively in beam conditions monitors as the innermost detectors in the highest radiation areas of all LHC experiments. Moreover CVD diamond is now being discussed as an alternative sensor material for tracking very close to the interaction region of the HL-LHC where the most extreme radiation conditions will exist. Our work addressed the further development of the new material, single-crystal Chemical Vapor Deposition diamond, towards reliable industrial production of large pieces and new geometries needed for detector applications. Our accomplishments include: • Developed a two U.S.companies to produce electronic grade diamond, • Worked with companies and acquired large area diamond pieces, • Performed radiation hardness tests using various proton energies: 70 MeV (Cyric, Japan), 800 MeV (Los Alamos), and 24 GeV (CERN).

  18. Oxidation Protection Systems for Carbon-Carbon Composites Formed by Chemical Vapor Deposition and Plasma Assisted Chemical Vapor Deposition Techniques

    Science.gov (United States)

    1992-04-22

    combination. They may be in the form of a piece of felt. stacked multiple layers of cloth, filament windings of uni- or multi-directional tubes or cones, as...the measurement was preformed. A 10 gram brass standard balance weight was used for this purpose. Its volume was also measured by Archimedes ’ principle...engine turbine blades from oxidation. 20 These type of diffusion treatments are also used with carbon and nitrogen for carburizing or nitriding metals. 2

  19. Heteroepitaxial growth of 3-5 semiconductor compounds by metal-organic chemical vapor deposition for device applications

    Science.gov (United States)

    Collis, Ward J.; Abul-Fadl, Ali

    1988-01-01

    The purpose of this research is to design, install and operate a metal-organic chemical vapor deposition system which is to be used for the epitaxial growth of 3-5 semiconductor binary compounds, and ternary and quaternary alloys. The long-term goal is to utilize this vapor phase deposition in conjunction with existing current controlled liquid phase epitaxy facilities to perform hybrid growth sequences for fabricating integrated optoelectronic devices.

  20. Suitable alkaline for graphene peeling grown on metallic catalysts using chemical vapor deposition

    Energy Technology Data Exchange (ETDEWEB)

    Karamat, S., E-mail: shumailakaramat@gmail.com [Department of Physics, Middle East Technical University, Ankara 06800 (Turkey); COMSATS Institute of Information Technology, Islamabad 54000 (Pakistan); Sonuşen, S. [Sabancı Üniversitesi (SUNUM), İstanbul 34956 (Turkey); Çelik, Ü. [Nanomagnetics Instruments, Ankara (Turkey); Uysallı, Y. [Department of Physics, Middle East Technical University, Ankara 06800 (Turkey); Oral, A., E-mail: orahmet@metu.edu.tr [Department of Physics, Middle East Technical University, Ankara 06800 (Turkey)

    2016-04-15

    Graphical abstract: - Highlights: • Graphene layers were grown on Pt and Cu foil via ambient pressure chemical vapor deposition method and for the delicate removal of graphene from metal catalysts, electrolysis method was used by using different alkaline (sodium hydroxide, potassium hydroxide, lithium hydroxide and barium hydroxide). • The delamination speed of PMMA/graphene stack was higher during the KOH and LiOH electrolysis as compare to NaOH and Ba(OH){sub 2}. Ba(OH){sub 2} is not advisable because of the residues left on the graphene surface which would further trapped in between graphene and SiO{sub 2}/Si surface after transfer. The average peeling time in case of Pt electrode is ∼6 min for KOH and LiOH and ∼15 min for NaOH and Ba(OH){sub 2}. • Electrolysis method also works for the Cu catalyst. The peeling of graphene was faster in the case of Cu foil due to small size of bubbles which moves faster between the stack and the electrode surface. The average peeling time was ∼3–5 min. • XPS analysis clearly showed that the Pt substrates can be re-used again. Graphene layer was transferred to SiO{sub 2}/Si substrates and to the flexible substrate by using the same peeling method. - Abstract: In chemical vapor deposition, the higher growth temperature roughens the surface of the metal catalyst and a delicate method is necessary for the transfer of graphene from metal catalyst to the desired substrates. In this work, we grow graphene on Pt and Cu foil via ambient pressure chemical vapor deposition (AP-CVD) method and further alkaline water electrolysis was used to peel off graphene from the metallic catalyst. We used different electrolytes i.e., sodium hydroxide (NaOH), potassium hydroxide (KOH), lithium hydroxide (LiOH) and barium hydroxide Ba(OH){sub 2} for electrolysis, hydrogen bubbles evolved at the Pt cathode (graphene/Pt/PMMA stack) and as a result graphene layer peeled off from the substrate without damage. The peeling time for KOH and Li

  1. Initiated chemical vapor deposition of thermoresponsive poly(N-vinylcaprolactam) thin films for cell sheet engineering.

    Science.gov (United States)

    Lee, Bora; Jiao, Alex; Yu, Seungjung; You, Jae Bem; Kim, Deok-Ho; Im, Sung Gap

    2013-08-01

    Poly(N-vinylcaprolactam) (PNVCL) is a thermoresponsive polymer known to be nontoxic, water soluble and biocompatible. Here, PNVCL homopolymer was successfully synthesized for the first time by use of a one-step vapor-phase process, termed initiated chemical vapor deposition (iCVD). Fourier transform infrared spectroscopy results showed that radical polymerization took place from N-vinylcaprolactam monomers without damaging the functional caprolactam ring. A sharp lower critical solution temperature transition was observed at 31°C from the iCVD poly(N-vinylcaprolactam) (PNVCL) film. The thermoresponsive PNVCL surface exhibited a hydrophilic/hydrophobic alteration with external temperature change, which enabled the thermally modulated attachment and detachment of cells. The conformal coverage of PNVCL film on various substrates with complex topography, including fabrics and nanopatterns, was successfully demonstrated, which can further be utilized to fabricate cell sheets with aligned cell morphology. The advantage of this system is that cells cultured on such thermoresponsive surfaces could be recovered as an intact cell sheet by simply lowering the temperature, eliminating the need for conventional enzymatic treatments. Copyright © 2013 Acta Materialia Inc. Published by Elsevier Ltd. All rights reserved.

  2. Design and implementation of a novel portable atomic layer deposition/chemical vapor deposition hybrid reactor

    Science.gov (United States)

    Selvaraj, Sathees Kannan; Jursich, Gregory; Takoudis, Christos G.

    2013-09-01

    We report the development of a novel portable atomic layer deposition chemical vapor deposition (ALD/CVD) hybrid reactor setup. Unique feature of this reactor is the use of ALD/CVD mode in a single portable deposition system to fabricate multi-layer thin films over a broad range from "bulk-like" multi-micrometer to nanometer atomic dimensions. The precursor delivery system and control-architecture are designed so that continuous reactant flows for CVD and cyclic pulsating flows for ALD mode are facilitated. A custom-written LabVIEW program controls the valve sequencing to allow synthesis of different kinds of film structures under either ALD or CVD mode or both. The entire reactor setup weighs less than 40 lb and has a relatively small footprint of 8 × 9 in., making it compact and easy for transportation. The reactor is tested in the ALD mode with titanium oxide (TiO2) ALD using tetrakis(diethylamino)titanium and water vapor. The resulting growth rate of 0.04 nm/cycle and purity of the films are in good agreement with literature values. The ALD/CVD hybrid mode is demonstrated with ALD of TiO2 and CVD of tin oxide (SnOx). Transmission electron microscopy images of the resulting films confirm the formation of successive distinct TiO2-ALD and SnOx-CVD layers.

  3. Inverted polymer solar cells based on thin ZnO films grown by Mist chemical vapor deposition system

    Science.gov (United States)

    Biswas, Chandan; Ma, Zhu; Zhu, Xiaodan; Kawaharamura, Toshiyuki; Wang, Kang L.

    2014-10-01

    Extensive investigations have been conducted in order to synthesize high quality Zinc oxide (ZnO) thin films for numerous applications. These methods are either expensive to make or result polycrystalline thin films with low optoelectronic properties. Here we demonstrated a simple and inexpensive method to grow high quality ZnO thin films by a mist chemical vapor assisted depositing (Mist-CVD) system for inverted polymer solar cell (IPSC) application. The IPSC performance fabricated by Mist-CVD grown ZnO thin films were compared with two different Zn precursors (Zinc acetylacetonate hydrate and Zinc acetate dehydrate). Variations in IPSC performance on the growth temperature and growth time of the ZnO thin films were prominently demonstrated. The surface morphology of the ZnO films was investigated using scanning electron microscopy, atomic force microscopy and correlated with IPSC performance. The IPSC performance using two different precursors has been compared thoroughly. A 24% increase in solar cell efficiency (contributed from 21% increase in fill factor and 151% increase in shunt resistance) was achieved using Zinc acetate dehydrate compare to Zinc acetylacetonate hydrate precursor. The transmittance of ZnO thin films was evaluated by transmission spectroscopy. High performance IPSC can be fabricated using this simple and inexpensive method by synthesizing high quality thin ZnO films.

  4. Development of polishing methods for Chemical Vapor Deposited Silicon Carbide mirrors for synchrotron radiation

    Energy Technology Data Exchange (ETDEWEB)

    Fuchs, B.A.; Brown, N.J.

    1987-01-01

    Material properties of Chemical Vapor Deposited Silicon Carbide (CVD SiC) make it ideal for use in mirrors for synchrotron radiation experiments. We developed methods to grind and polish flat samples of CVD SiC down to measured surface roughness values as low as 1.1 Angstroms rms. We describe the processing details, including observations we made during trial runs with alternative processing recipes. We conclude that pitch polishing using progressively finer diamond abrasive, augmented with specific water based lubricants and additives, produces superior results. Using methods based on these results, a cylindrical and a toroidal mirror, each about 100 x 300mm, were respectively finished by Continental Optical and Frank Cooke, Incorporated. WYCO Interferometry shows these mirrors have surface roughness less than 5.7 Angstroms rms. These mirrors have been installed on the LLNL/UC X-ray Calibration and Standards Facility at the Stanford Synthrotron Radiation Laboratory.

  5. Current Issues and Problems in the Chemical Vapor Deposition of Diamond

    Science.gov (United States)

    Yarbrough, Walter A.; Messier, Russell

    1990-02-01

    Current issues and problems in the chemical vapor deposition (CVD) of diamond are those which relate to its characterization, its nucleation on foreign surfaces, the question of its formation in preference to the other phases of solid carbon (for example, graphite, chaoite, or lonsdaleite), why different morphologies and crystallographic orientations (textures) are seen in different experiments or with different parameters in the same experiment, and finally whether well-crystallized metastable phases can be obtained by CVD in other material systems or are only a peculiarity of carbon chemistry. Whether a given carbon coating is justly described as diamond has been such an issue, and coatings should clearly show evidence for diamond by x-ray diffraction and Raman spectroscopy before the claim of diamond is made. Experimental results have not been consistent in many cases, and much work remains to be done before an accurate assessment can be made of the technological impact of the development.

  6. Graphene-laminated architectures obtained by chemical vapor deposition: From graphene to graphite

    Science.gov (United States)

    Kitayama, Hiroki; Shimizu, Kengo; Ohba, Tomonori

    2017-11-01

    Graphene and graphite are of great interest in materials science. Using chemical vapor deposition at various CH4:H2 ratios, we synthesized materials with graphene-laminated architectures, ranging from graphene to graphite. A lower proportion of CH4 and lower synthesis temperature produced fewer graphene layers. The transparent properties changed from transparent to semi-transparent, black, and silver as the number of graphene layers was increased. The sheet electrical resistivity ranged from 106 to 0.2 Ω □-1, and the smaller resistivity was nearly equaled as the values of highly orientated pyrolytic graphite and glassy carbon. The graphene-laminated materials featured a wide range of transmittance, reflectance, and electrical conductance properties.

  7. Photoluminescence characterization of the grain boundary thermal stability in chemical vapor deposition grown WS2

    Science.gov (United States)

    Cai, Shuang; Zhao, Weiwei; Zafar, Amina; Wu, Zhangting; Tao, Yi; Bi, Kedong; Wei, Zhiyong; Ni, Zhenhua; Chen, Yunfei

    2017-10-01

    Monolayer transition metal dichalcogenides (TMDs) such as MoS2 and WS2 have been considered as promising candidate materials in nanophotonic applications. However, the structure stability of TMDs based optoelectronic devices is highly sensitive to the working environment. Here we present a successive photoluminescence study of the thermal stability characterization of grain boundary in chemical vapor deposition grown monolayer WS2. Results show that PL intensity enhancement in grain boundaries can be significantly weakened during the annealing process. Transformation temperature starts around 210 °C, substantially lower than the surrounding non-grain-boundary area. First-principle calculations results show that the PL quenching of grain boundaries is caused by the increased structural defects induced by annealing process, which makes the transition of electrons more difficult. Our results provide a route for characterizing the structure stability of two dimensional (2D) semiconductors, calling for extra attention to nanophotonic device working condition.

  8. Macrokinetics of carbon nanotubes synthesis by the chemical vapor deposition method

    Science.gov (United States)

    Rukhov, Artem; Dyachkova, Tatyana; Tugolukov, Evgeny; Besperstova, Galina

    2017-11-01

    A new approach to studying and developing basic processes which take place on the surface of a metal catalyst during the thermal decomposition of carbonaceous substances in the carbon nanotubes synthesis by the chemical vapor deposition method was proposed. In addition, an analysis was made of the interrelationships between these thermal, diffusion, hydrodynamic and other synthesis processes. A strong effect of the catalyst regeneration stage on the stage of nanotube formation has been shown. Based on the developed approach, a mathematical model was elaborated. Comparison of the calculation and the experiment carried out with the NiO-MgO catalyst at propane flow rate of 50 mL/min (standard conditions) and ethanol flow rate 0.3 mL/min (liq.) has revealed a discrepancy of less than 10%.

  9. X-ray Tomographic Study of Chemical Vapor Infiltration Processing of Ceramic Composites.

    Science.gov (United States)

    Kinney, J H; Breunig, T M; Starr, T L; Haupt, D; Nichols, M C; Stock, S R; Butts, M D; Saroyan, R A

    1993-05-07

    The fabrication of improved ceramic-matrix composites will require a better understanding of processing variables and how they control the development of the composite microstructure. Noninvasive, high-resolution methods of x-ray tomography have been used to measure the growth of silicon carbide in a woven Nicalon-fiber composite during chemical vapor infiltration. The high spatial resolution allows one to measure the densification within individual fiber tows and to follow the closure of macroscopic pores in situ. The experiments provide a direct test of a recently proposed model that describes how the surface area available for matrix deposition changes during infiltration. The measurements indicate that this surface area is independent of the fiber architecture and location within the preform and is dominated by large-scale macroporosity during the final stages of composite consolidation. The measured surface areas are in good agreement with the theoretical model.

  10. Growth study of indium-catalyzed silicon nanowires by plasma enhanced chemical vapor deposition

    Science.gov (United States)

    Zardo, I.; Conesa-Boj, S.; Estradé, S.; Yu, L.; Peiro, F.; Roca I Cabarrocas, P.; Morante, J. R.; Arbiol, J.; Fontcuberta I Morral, A.

    2010-07-01

    Indium was used as a catalyst for the synthesis of silicon nanowires in a plasma enhanced chemical vapor deposition reactor. In order to foster the catalytic activity of indium, the indium droplets had to be exposed to a hydrogen plasma prior to nanowire growth in a silane plasma. The structure of the nanowires was investigated as a function of the growth conditions by electron microscopy and Raman spectroscopy. The nanowires were found to crystallize along the , or growth direction. When growing on the and directions, they revealed a similar crystal quality and the presence of a high density of twins along the {111} planes. The high density and periodicity of these twins lead to the formation of hexagonal domains inside the cubic structure. The corresponding Raman signature was found to be a peak at 495 cm-1, in agreement with previous studies. Finally, electron energy loss spectroscopy indicates an occasional migration of indium during growth.

  11. Carrier dynamics in InS nanowires grown via chemical vapor deposition

    Energy Technology Data Exchange (ETDEWEB)

    Othonos, Andreas [Department of Physics, Research Centre of Ultrafast Science, University of Cyprus, P.O. Box 20537, 1678 Nicosia (Cyprus); Zervos, Matthew [Department of Mechanical and Manufacturing Engineering, Nanostructured Materials and Devices Laboratory, Materials Science Group, University of Cyprus, P.O. Box 20537, 1678 Nicosia (Cyprus)

    2010-10-15

    Transient femtosecond absorption spectroscopy and time-correlating single photon counting (TCSPC) photoluminescence (PL) were employed to study InS nanowires (NWs) grown by chemical vapor deposition (CVD) and determine the relaxation mechanisms in these nanostructures. Intensity dependent measurements revealed that Auger recombination plays an important role in the relaxation of photogenerated carriers at fluences larger than 0.4 x 10{sup 15} photons/cm{sup 2}. Calculations provided an estimated of the Auger recombination coefficient to be 1.1 {+-} 0.5 x 10{sup -31} cm{sup 6}/s. At the low fluence regime TCSPC PL revealed three relaxation mechanisms with time constants ranging from ps to nanosecond providing evidence of the importance of non-radiative decay channels associated with defect/trap states within the NWs. Auger recombination appears to dominate the carrier dynamics in InS NWs with increasing incident photon flux. (Abstract Copyright [2010], Wiley Periodicals, Inc.)

  12. Chemical vapor infiltration of TiB{sub 2} fibrous composites

    Energy Technology Data Exchange (ETDEWEB)

    Besmann, T.M. [Oak Ridge National Lab., TN (United States)

    1997-04-01

    This program is designed to develop a Hall-Heroult aluminum smelting cathode with substantially improved properties. The carbon cathodes in current use require significant anode-to-cathode spacing in order to prevent shorting, causing significant electrical inefficiencies. This is due to the non-wettability of carbon by aluminum which causes instability in the cathodic aluminum pad. It is suggested that a fiber reinforced-TiB{sub 2} matrix composite would have the requisite wettability, strength, strain-to-failure, cost, and lifetime to solve this problem. The approach selected to fabricate such a cathode material is chemical vapor infiltration (CVI). This process produces high purity matrix TiB{sub 2} without damaging the relatively fragile fibers. The program is designed to evaluate potential fiber reinforcements, fabricate test specimens, and scale the process to provide demonstration components.

  13. Characterization of catalytic chemical vapor-deposited SiCN thin film coatings

    Science.gov (United States)

    Neethirajan, Suresh; Ono, Takahita; Masayoshi, Esashi

    2012-06-01

    Silicon carbonitride thin films of 480 to 730-nm thicknesses were grown on silicon substrate using ammonia and hexamethyldisilazane gas sources using catalytic chemical vapor deposition process. Compositions of silicon, carbon and nitrogen in the SiCN films were varied by changing the flow rate of ammonia gas. The effect of deposition conditions on the structural, optical and mechanical properties of SiCN thin films was examined. X-ray photoelectron spectroscopy analysis indicated that the higher flow rate of ammonia gas results in higher nitrogen and lower carbon content in the deposited thin films. The measurement of stress as a function of substrate temperature in the SiCN film showed that the stress changes from compressive to tensile in the range of 275°C to 325°C. With these preliminary characterization tests, it is expected that SiCN nano-thin films can be used for developing sensors for harsh environment.

  14. Study of surface morphology and alignment of MWCNTs grown by chemical vapor deposition

    Energy Technology Data Exchange (ETDEWEB)

    Shukrullah, S., E-mail: zshukrullah@gmail.com, E-mail: noranimuti-mohamed@petronas.com.my, E-mail: maizats@petronas.com.my; Mohamed, N. M., E-mail: zshukrullah@gmail.com, E-mail: noranimuti-mohamed@petronas.com.my, E-mail: maizats@petronas.com.my; Shaharun, M. S., E-mail: zshukrullah@gmail.com, E-mail: noranimuti-mohamed@petronas.com.my, E-mail: maizats@petronas.com.my [Department of Fundamental and Applied Sciences, Universiti Teknologi PETRONAS, 31750 Tronoh, Perak (Malaysia); Yasar, M., E-mail: Muhammad.yasar@ieee.org [Department of Electrical and Electronic Engineering, Universiti Teknologi PETRONAS, 31750 Tronoh, Perak (Malaysia)

    2014-10-24

    In this research work, Multiwalled Carbon Nanotubes (MWCNTs) have been synthesized successfully by using floating catalytic chemical vapor deposition (FCCVD) method. Different ferrocene amounts (0.1, 0.125 and 0.15 g) were used as catalyst and ethylene was used as a carbon precursor at reaction temperature of 800°C. Characterization of the grown MWCNTs was carried out by using scanning electron microscopy (SEM) and transmission electron microscopy (TEM). The obtained data showed that the catalyst weight affects the nanotubes diameter, alignment, crystallinity and growth significantly, whereas negligible influence was noticed on CNTs forest length. The dense, uniform and meadow like patterns of grown CNTs were observed for 0.15 g ferrocene. The average diameter of the grown CNTs was found in the range of 32 to 75 nm. Close inspection of the TEM images also confirmed the defects in some of the grown CNTs, where few black spots were evident in CNTs structure.

  15. Metal-free plasma-enhanced chemical vapor deposition of large area nanocrystalline graphene

    Science.gov (United States)

    Schmidt, Marek E.; Xu, Cigang; Cooke, Mike; Mizuta, Hiroshi; Chong, Harold M. H.

    2014-04-01

    This paper reports on large area, metal-free deposition of nanocrystalline graphene (NCG) directly onto wet thermally oxidized 150 mm silicon substrates using parallel-plate plasma-enhanced chemical vapor deposition. Thickness non-uniformities as low as 13% are achieved over the whole substrate. The cluster size {{L}_{\\text{a}}} of the as-obtained films is determined from Raman spectra and lies between 1.74 and 2.67 nm. The film uniformity was further confirmed by Raman mapping. The sheet resistance {{R}_{\\text{sq}}} of 3.73 \\text{k}\\Omega and charge carrier mobility μ of 2.49\\;\\text{c}{{\\text{m}}^{2}}\\;{{\\text{V}}^{-1}}\\;{{\\text{s}}^{-1}} are measured. We show that the NCG films can be readily patterned by reactive ion etching. NCG is also successfully deposited onto quartz and sapphire substrates and showed >85% optical transparency in the visible light spectrum.

  16. Carbon agent chemical vapor transport growth of Ga2O3 crystal

    Science.gov (United States)

    Jie, Su; Tong, Liu; Jingming, Liu; Jun, Yang; Guiying, Shen; Yongbiao, Bai; Zhiyuan, Dong; Youwen, Zhao

    2016-10-01

    Beta-type gallium oxide (β-Ga2O3) is a new attractive material for optoelectronic devices. Different methods had been tried to grow high quality β-Ga2O3 crystals. In this work, crystal growth of Ga2O3 has been carried out by chemical vapor transport (CVT) method in a closed quartz tube using C as transport agent and sapphire wafer as seed. The CVT mass flux has been analyzed by theoretical calculations based on equilibrium thermodynamics and 1D diffusional mass transport. The crystal growth experimental results are in agreement with the theoretical predictions. Influence factors of Ga2O3 crystal growth, such as temperature distribution, amount of C as transport agent used, have also been discussed. Structural (XRD) and optical (Raman spectroscopy, photoluminescence spectrum) properties of the CVT-Ga2O3 crystal are presented. Project supported by the National Natural Science Foundation of China (Nos. 61474104, 61504131).

  17. Synthesis of boron nitride nanotubes by Argon supported Thermal Chemical Vapor Deposition

    Science.gov (United States)

    Ahmad, Pervaiz; Khandaker, Mayeen Uddin; Amin, Yusoff Mohd

    2015-03-01

    Thermal Chemical Vapor Deposition technique is modified with the use of Argon gas flow inside the chamber as an alternative for vacuum and orientation of one end closed quartz test tube. The use of Argon gas not only simplified the experimental set up, but also made it ~ 18 % cost effective compared to the conventional set up. Field Emission Scanning Electron Microscopy micrographs show straight and long BNNTs along with some cotton like morphologies. Transmission electron microscopy revealed bamboo like structure inside the tube and ~0.34 nm interlayer spacing for highly crystalline nature of boron nitride nanotubes. X-ray photon spectroscopy shows B 1s peak at 191.08 eV and N 1s peak at 398.78 eV that represents h-BN. Whereas, Raman spectrum indicates a major peak at ~1379.60 (cm-1) that correspond to E2g mode of h-BN.

  18. Large single crystals of graphene on melted copper using chemical vapor deposition.

    Science.gov (United States)

    Wu, Yimin A; Fan, Ye; Speller, Susannah; Creeth, Graham L; Sadowski, Jerzy T; He, Kuang; Robertson, Alex W; Allen, Christopher S; Warner, Jamie H

    2012-06-26

    A simple method is presented for synthesizing large single crystal graphene domains on melted copper using atmospheric pressure chemical vapor deposition (CVD). This is achieved by performing the reaction above the melting point of copper (1090 °C) and using a molybdenum or tungsten support to prevent balling of the copper from dewetting. By controlling the amount of hydrogen during growth, individual single crystal domains of monolayer graphene greater than 200 μm are produced within a continuous film. Stopping growth before a complete film is formed reveals individual hexagonal domains of graphene that are epitaxially aligned in their orientation. Angular resolved photoemission spectroscopy is used to show that the graphene grown on copper exhibits a linear dispersion relationship and no sign of doping. HRTEM and electron diffraction reveal a uniform high quality crystalline atomic structure of monolayer graphene.

  19. Ultrahigh-mobility graphene devices from chemical vapor deposition on reusable copper.

    Science.gov (United States)

    Banszerus, Luca; Schmitz, Michael; Engels, Stephan; Dauber, Jan; Oellers, Martin; Haupt, Federica; Watanabe, Kenji; Taniguchi, Takashi; Beschoten, Bernd; Stampfer, Christoph

    2015-07-01

    Graphene research has prospered impressively in the past few years, and promising applications such as high-frequency transistors, magnetic field sensors, and flexible optoelectronics are just waiting for a scalable and cost-efficient fabrication technology to produce high-mobility graphene. Although significant progress has been made in chemical vapor deposition (CVD) and epitaxial growth of graphene, the carrier mobility obtained with these techniques is still significantly lower than what is achieved using exfoliated graphene. We show that the quality of CVD-grown graphene depends critically on the used transfer process, and we report on an advanced transfer technique that allows both reusing the copper substrate of the CVD growth and making devices with mobilities as high as 350,000 cm(2) V(-1) s(-1), thus rivaling exfoliated graphene.

  20. Uniformity of large-area bilayer graphene grown by chemical vapor deposition

    Science.gov (United States)

    Sheng, Yuewen; Rong, Youmin; He, Zhengyu; Fan, Ye; Warner, Jamie H.

    2015-10-01

    Graphene grown by chemical vapor deposition (CVD) on copper foils is a viable method for large area films for transparent conducting electrode (TCE) applications. We examine the spatial uniformity of large area films on the centimeter scale when transferred onto both Si substrates with 300 nm oxide and flexible transparent polyethylene terephthalate substrates. A difference in the quality of graphene, as measured by the sheet resistance and transparency, is found for the areas at the edges of large sheets that depends on the supporting boat used for the CVD growth. Bilayer graphene is grown with uniform properties on the centimeter scale when a flat support is used for CVD growth. The flat support provides consistent delivery of precursor to the copper catalyst for graphene growth. These results provide important insights into the upscaling of CVD methods for growing high quality graphene and its transfer onto flexible substrates for potential applications as a TCE.

  1. Effect of cooling condition on chemical vapor deposition synthesis of graphene on copper catalyst.

    Science.gov (United States)

    Choi, Dong Soo; Kim, Keun Soo; Kim, Hyeongkeun; Kim, Yena; Kim, TaeYoung; Rhy, Se-hyun; Yang, Cheol-Min; Yoon, Dae Ho; Yang, Woo Seok

    2014-11-26

    Here, we show that chemical vapor deposition growth of graphene on copper foil is strongly affected by the cooling conditions. Variation of cooling conditions such as cooling rate and hydrocarbon concentration in the cooling step has yielded graphene islands with different sizes, density of nuclei, and growth rates. The nucleation site density on Cu substrate is greatly reduced when the fast cooling condition was applied, while continuing methane flow during the cooling step also influences the nucleation and growth rate. Raman spectra indicate that the graphene synthesized under fast cooling condition and methane flow on cool-down exhibit superior quality of graphene. Further studies suggest that careful control of the cooling rate and CH4 gas flow on the cooling step yield a high quality of graphene.

  2. Highly oriented, free-standing, superconducting NbN films growth on chemical vapor deposited graphene

    Directory of Open Access Journals (Sweden)

    Garima Saraswat

    2014-05-01

    Full Text Available NbN films are grown on chemical vapor deposited graphene using dc magnetron sputtering. The orientation and transition temperature of the deposited films is studied as a function of substrate temperature. A superconducting transition temperature of 14 K is obtained for highly oriented (111 films grown at substrate temperature of 150 °C, which is comparable to epitaxial films grown on MgO and sapphire substrates. These films show a considerably high upper critical field of ∼33 T. In addition, we demonstrate a process for obtaining flexible, free-standing NbN films by delaminating graphene from the substrate using a simple wet etching technique. These free-standing NbN layers can be transferred to any substrate, potentially enabling a range of novel superconducting thin-film applications.

  3. Characterization of ultra-short pulsed discharge plasma for CVD processing. [Chemical Vapor Deposition

    Energy Technology Data Exchange (ETDEWEB)

    Mizuno, Akira (Toyohashi Univ. of Technology (Japan). Dept. of Ecological Engineering); Okazaki, Ken (Tokyo Inst. of Technology (Japan). Research Center for Carbon Recycling and Utilization); Takekoshi, Takashi (Mitsubishi Kasei Co., Okayama (Japan). Mizushima Works); Tobe, Ryoki (Anelva Corp., Tokyo (Japan). Research Development Center)

    Characteristics of pulsed discharge plasma of methane-hydrogen gas mixture and Ar gas have been studied for active control of plasma chemical vapor deposition (CVD) processing. Voltage-current characteristics, time-lag of the current pulse, and the photon emission intensity profile have been investigated using high-voltage pulses of 50-1000 ns duration. In such a pulse discharge, voltages much higher than those in a dc glow discharge can be applied without any plasma nonuniformity or arcing because voltage amplitude falls to zero before glow to arc transition. A current value of more than 10[sup 3] times those in a glow discharge can be established. Very high photon emission intensity from CH radicals and H ions have been observed near the anode in a pulsed plasma. This is different in dc plasma, where the negative glow region near the cathode is the brightest.

  4. Preparation of γ-Al2O3 films by laser chemical vapor deposition

    Science.gov (United States)

    Gao, Ming; Ito, Akihiko; Goto, Takashi

    2015-06-01

    γ- and α-Al2O3 films were prepared by chemical vapor deposition using CO2, Nd:YAG, and InGaAs lasers to investigate the effects of varying the laser wavelength and deposition conditions on the phase composition and microstructure. The CO2 laser was found to mostly produce α-Al2O3 films, whereas the Nd:YAG and InGaAs lasers produced γ-Al2O3 films when used at a high total pressure. γ-Al2O3 films had a cauliflower-like structure, while the α-Al2O3 films had a dense and columnar structure. Of the three lasers, it was the Nd:YAG laser that interacted most with intermediate gas species. This promoted γ-Al2O3 nucleation in the gas phase at high total pressure, which explains the cauliflower-like structure of nanoparticles observed.

  5. Controlled Synthesis of Atomically Layered Hexagonal Boron Nitride via Chemical Vapor Deposition

    Directory of Open Access Journals (Sweden)

    Juanjuan Liu

    2016-11-01

    Full Text Available Hexagonal boron nitrite (h-BN is an attractive material for many applications including electronics as a complement to graphene, anti-oxidation coatings, light emitters, etc. However, the synthesis of high-quality h-BN is still a great challenge. In this work, via controlled chemical vapor deposition, we demonstrate the synthesis of h-BN films with a controlled thickness down to atomic layers. The quality of as-grown h-BN is confirmed by complementary characterizations including high-resolution transition electron microscopy, atomic force microscopy, Raman spectroscopy and X-ray photo-electron spectroscopy. This work will pave the way for production of large-scale and high-quality h-BN and its applications as well.

  6. Synthesis of Y-Tip Graphitic Nanoribbons from Alcohol Catalytic Chemical Vapor Deposition on Piezoelectric Substrate

    Directory of Open Access Journals (Sweden)

    Zainab Yunusa

    2015-01-01

    Full Text Available We report the synthesis of Graphitic Nanoribbons (GNRs using Alcohol Catalytic Chemical Vapor Deposition (ACCVD. Bulk GNR was synthesized directly on a piezoelectric substrate using one-step ACCVD. The synthesized GNRs were characterized by X-Ray Diffraction (XRD, Scanning Electron Microscope (SEM, Transmission Electron Microscope (TEM, Energy Dispersive X-Ray (EDX, Atomic Force Microscopy (AFM, and Raman spectroscopy. The characterization results showed Y-tip morphology of bulk and filamentous as-grown GNR having varying width that lies between tens and hundreds of nm and length of several microns. Based on the thickness obtained from the AFM and the analysis from the Raman spectroscopy, it was concluded that the synthesized GNRs are multiple-layered and graphitic in nature. With the direct synthesis of GNR on a piezoelectric substrate, it could have applications in the sensor industries, while the Y-tip GNR could have potentialities in semiconductor applications.

  7. Layer-dependent supercapacitance of graphene films grown by chemical vapor deposition on nickel foam

    KAUST Repository

    Chen, Wei

    2013-03-01

    High-quality, large-area graphene films with few layers are synthesized on commercial nickel foams under optimal chemical vapor deposition conditions. The number of graphene layers is adjusted by varying the rate of the cooling process. It is found that the capacitive properties of graphene films are related to the number of graphene layers. Owing to the close attachment of graphene films on the nickel substrate and the low charge-transfer resistance, the specific capacitance of thinner graphene films is almost twice that of the thicker ones and remains stable up to 1000 cycles. These results illustrate the potential for developing high-performance graphene-based electrical energy storage devices. © 2012 Elsevier B.V. All rights reserved.

  8. Minimizing artifact formation in magnetorheological finishing of chemical vapor deposition ZnS flats

    Science.gov (United States)

    Kozhinova, Irina A.; Romanofsky, Henry J.; Maltsev, Alexander; Jacobs, Stephen D.; Kordonski, William I.; Gorodkin, Sergei R.

    2005-08-01

    The polishing performance of magnetorheological (MR) fluids prepared with a variety of magnetic and nonmagnetic ingredients was studied on four types of initial surface for chemical vapor deposition (CVD) ZnS flats from domestic and foreign sources. The results showed that it was possible to greatly improve smoothing performance of magnetorheological finishing (MRF) by altering the fluid composition, with the best results obtained for nanoalumina abrasive used with soft carbonyl iron and altered MR fluid chemistry. Surface roughness did not exceed 20 nm peak to valley and 2 nm rms after removal of 2 μm of material. The formation of orange peel and the exposure of a pebblelike structure inherent in ZnS from the CVD process were suppressed.

  9. Chemical vapor deposition polymerization the growth and properties of parylene thin films

    CERN Document Server

    Fortin, Jeffrey B

    2004-01-01

    Chemical Vapor Deposition Polymerization - The Growth and Properties of Parylene Thin Films is intended to be valuable to both users and researchers of parylene thin films. It should be particularly useful for those setting up and characterizing their first research deposition system. It provides a good picture of the deposition process and equipment, as well as information on system-to-system variations that is important to consider when designing a deposition system or making modifications to an existing one. Also included are methods to characterizae a deposition system's pumping properties as well as monitor the deposition process via mass spectrometry. There are many references that will lead the reader to further information on the topic being discussed. This text should serve as a useful reference source and handbook for scientists and engineers interested in depositing high quality parylene thin films.

  10. Comparison between ZnO nanowires grown by chemical vapor deposition and hydrothermal synthesis

    Science.gov (United States)

    Podrezova, L. V.; Porro, S.; Cauda, V.; Fontana, M.; Cicero, G.

    2013-11-01

    Vertically aligned zinc oxide nanowires (NWs) were synthesized by two different techniques: chemical vapor deposition (CVD) and hydrothermal synthesis. To compare the effects of different growth conditions, both F-doped SnO2 (FTO) coated-glass and silicon wafers were used as substrates. Before NWs growth, all the substrates were covered with a ZnO seed layer film obtained with the same procedure, which acts as nucleation site for the subsequent growth of the nanowires both during CVD and hydrothermal synthesis. We studied the influence of the two synthesis techniques and the growth duration on the final morphology, orientation, and density of the ZnO NWs using electron microscopy and X-ray diffraction, while the NWs optical quality was addressed by UV-Vis spectroscopy. By discussing advantages and disadvantages of both synthesis methods, we finally show that the application purpose often drives the choice of the NWs growth process and the substrate to be used.

  11. Macroscopic Synthesis of Vertically Aligned Carbon Nanotubes Using Floating Catalyst Chemical Vapor Deposition Method

    Science.gov (United States)

    Mirbagheri, S. Ahmad; Kazemzadeh, Asghar; Abedin Maghanaki, Amir

    2012-01-01

    In this paper, we report an efficient process to grow well-aligned carbon nanotube (CNT) arrays with a good area distribution density (about 5.6 ×107 CNT/mm2). Vertically aligned carbon nanotubes (VA-CNTs) have been produced by controlling flow rate, temperature and catalyst nanoparticles using a floating catalyst chemical vapor deposition (FC-CVD) technique. They were synthesized on quartz substrates at 800 °C from toluene as a carbon source. VA-CNT samples were characterized by scanning electron microscopy (SEM), transmission electron microscopy (TEM), Raman spectroscopy and their surface area and pore size were determined by nitrogen adsorption analysis. The synthesized CNTs have a length of 500 µm and diameters ranging from 120±40 nm. The CNT filaments form a strength structure and exhibit a good vertical alignment. The remarkable properties of CNTs make them attractive for separation applications, especially for water and wastewater treatment.

  12. Chemical-Vapor-Deposited Graphene as Charge Storage Layer in Flash Memory Device

    Directory of Open Access Journals (Sweden)

    W. J. Liu

    2016-01-01

    Full Text Available We demonstrated a flash memory device with chemical-vapor-deposited graphene as a charge trapping layer. It was found that the average RMS roughness of block oxide on graphene storage layer can be significantly reduced from 5.9 nm to 0.5 nm by inserting a seed metal layer, which was verified by AFM measurements. The memory window is 5.6 V for a dual sweep of ±12 V at room temperature. Moreover, a reduced hysteresis at the low temperature was observed, indicative of water molecules or −OH groups between graphene and dielectric playing an important role in memory windows.

  13. Uniformity of quantum well heterostructure GaAlAs lasers grown by metalorganic chemical vapor deposition

    Energy Technology Data Exchange (ETDEWEB)

    Scifres, D.R.; Burnham, R.D.; Bernstein, M.; Chung, H.; Endicott, F.; Mosby, W.; Tramontana, J.; Walker, J.; Yingling, R.D. Jr.

    1982-09-15

    The threshold current density, laser wavelength, grown layer thickness, reverse breakdown voltage, and far-field radiation pattern as a function of position on the grown wafer are reported for broad area multiple quantum well GaAlAs heterostructure lasers grown by metalorganic chemical vapor deposition. It is found that the layer thickness varies across a 1.5-in. sample by as much as 20% at the outer edges of the water, leading to a lasing wavelength shift of as much as 150 A owing to the quantum size effect. It is shown that this thickness variation has only a small effect on the threshold current density across the water such that the uniformity of threshold current density is comparable to that reported previously for molecular beam epitaxy-grown conventional double heterostructure lasers.

  14. Improved carrier mobility of chemical vapor deposition-graphene by counter-doping with hydrazine hydrate

    Energy Technology Data Exchange (ETDEWEB)

    Chen, Zhiying; Zhang, Yanhui; Zhang, Haoran; Sui, Yanping; Zhang, Yaqian; Ge, Xiaoming; Yu, Guanghui, E-mail: ghyu@mail.sim.ac.cn; Xie, Xiaoming; Li, Xiaoliang [State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200050 (China); Jin, Zhi; Liu, Xinyu [Microwave Devices and Integrated Circuits Department, Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029 (China)

    2015-03-02

    We developed a counter-doping method to tune the electronic properties of chemical vapor deposition (CVD)-grown graphene by varying the concentration and time of graphene exposure to hydrazine hydrate (N{sub 2}H{sub 4}·H{sub 2}O). The shift of G and 2D peaks of Raman spectroscopy is analyzed as a function of N{sub 2}H{sub 4}·H{sub 2}O concentration. The result revealed that N{sub 2}H{sub 4}·H{sub 2}O realized n-type doping on CVD grown graphene. X-ray photoelectron spectroscopy measurement proved the existence of nitrogen, which indicated the adsorption of N{sub 2}H{sub 4} on the surface of graphene. After counter-doping, carrier mobility, which was measured by Hall measurements, increased three fold.

  15. Fabrication of Rare Earth-Doped Transparent Glass Ceramic Optical Fibers by Modified Chemical Vapor Deposition

    CERN Document Server

    Blanc, Wilfried; Nguyen, Luan; Bhaktha, S N B; Sebbah, Patrick; Pal, Bishnu P; Dussardier, Bernard

    2011-01-01

    Rare earth (RE) doped silica-based optical fibers with transparent glass ceramic (TGC) core was fabricated through the well-known modified chemical vapor deposition (MCVD) process without going through the commonly used stage of post-ceramming. The main characteristics of the RE-doped oxyde nanoparticles namely, their density and mean diameter in the fibers are dictated by the concentration of alkaline earth element used as phase separating agent. Magnesium and erbium co-doped fibers were fabricated. Optical transmission in term of loss due to scattering as well as some spectroscopic characteristics of the erbium ions was studied. For low Mg content, nano-scale particles could be grown with and relatively low scattering losses were obtained, whereas large Mg-content causes the growth of larger particles resulting in much higher loss. However in the latter case, certain interesting alteration of the spectroscopic properties of the erbium ions were observed. These initial studies should be useful in incorporati...

  16. Silicon Chemical Vapor Deposition Process Using a Half-Inch Silicon Wafer for Minimal Manufacturing System

    Science.gov (United States)

    Li, Ning; Habuka, Hitoshi; Ikeda, Shin-ichi; Hara, Shiro

    A chemical vapor deposition reactor for producing thin silicon films was designed and developed for achieving a new electronic device production system, the Minimal Manufacturing, using a half-inch wafer. This system requires a rapid process by a small footprint reactor. This was designed and verified by employing the technical issues, such as (i) vertical gas flow, (ii) thermal operation using a highly concentrated infrared flux, and (iii) reactor cleaning by chlorine trifluoride gas. The combination of (i) and (ii) could achieve a low heating power and a fast cooling designed by the heat balance of the small wafer placed at a position outside of the reflector. The cleaning process could be rapid by (iii). The heating step could be skipped because chlorine trifluoride gas was reactive at any temperature higher than room temperature.

  17. Anisotropic growth mechanism of tungsten diselenide domains using chemical vapor deposition method

    Science.gov (United States)

    Lee, Yoobeen; Jeong, Heekyung; Park, Yi-Seul; Han, Seulki; Noh, Jaegeun; Lee, Jin Seok

    2018-02-01

    Anisotropic transition metal dichalcogenide (TMDC) domains have stimulated a growing interest mainly due to their electronic properties that depend on the size, shape, and edge structures of the domains. In this work, we investigated the anisotropic morphogenesis and edge terminations of tungsten diselenide (WSe2) domains grown on sapphire substrates by chemical vapor deposition (CVD) using tungsten oxide (WO3) and selenium (Se) powders as precursors. We varied the amount of Se powder and growth temperature during the CVD process, which in turn caused variations in the growth mechanism and kinetic energies of precursors. We succeeded in synthesizing hexagonal, square, circular, and triangular anisotropic WSe2 domains. They were characterized using scanning electron microscopy (SEM), Raman spectroscopy, photoluminescence (PL) analyses, and atomic force microscopy (AFM). Furthermore, we proposed the growth mechanism of anisotropic WSe2 domains with different edge terminations based on experimental observations through scanning tunneling microscope (STM).

  18. Catalytic Chemical Vapor Deposition Synthesis of Carbon Aerogels of High-Surface Area and Porosity

    Directory of Open Access Journals (Sweden)

    Armando Peña

    2012-01-01

    Full Text Available In this work carbon aerogels were synthesized by catalytic chemical vapor deposition method (CCVD. Ferrocene were employed as a source both of catalytic material (Fe and of carbon. Gaseous hydrogen and argon were used as reductant and carrier gas, respectively. The products of reaction were collected over alumina. The morphology and textural properties of the soot produced in the reaction chamber were investigated using Scanning Electron Microscopy, High-Resolution Transmission Electron Microscopy, X-ray photoelectron spectroscopy, and N2 physisorption (BET and BHJ methods. After the evaluation of the porous structure of the synthesized products, 780 ± 20 m2/g of SBET and 0.55 ± 0.02 cm3/g of VBJH were found. The presence of iron carbide and the partial oxidation of carbon nanostructures were revealed by XPS.

  19. Chemical vapor deposition of refractory ternary nitrides for advanced diffusion barriers

    Energy Technology Data Exchange (ETDEWEB)

    Custer, Jonathan S.; Fleming, James G.; Roherty-Osmun, Elizabeth; Smith, Paul Martin

    1998-09-22

    Refractory ternary nitride films for diffusion barriers in microelectronics have been grown using chemical vapor deposition. Thin films of titanium-silicon-nitride, tungsten-boron-nitride, and tungsten-silicon-nitride of various compositions have been deposited on 150 mm Si wafers. The microstructure of the films are either fully amorphous for the tungsten based films, or nauocrystalline TiN in an amorphous matrix for titanium-silicon-nitride. All films exhibit step coverages suitable for use in future microelectronics generations. Selected films have been tested as diffusion barriers between copper and silicon, and generally perform extremely weH. These fiIms are promising candidates for advanced diffusion barriers for microelectronics applications. The manufacturing of silicon wafers into integrated circuits uses many different process and materials. The manufacturing process is usually divided into two parts: the front end of line (FEOL) and the back end of line (BEOL). In the FEOL the individual transistors that are the heart of an integrated circuit are made on the silicon wafer. The responsibility of the BEOL is to wire all the transistors together to make a complete circuit. The transistors are fabricated in the silicon itself. The wiring is made out of metal, currently aluminum and tungsten, insulated by silicon dioxide, see Figure 1. Unfortunately, silicon will diffuse into aluminum, causing aluminum spiking of junctions, killing transistors. Similarly, during chemical vapor deposition (CVD) of tungsten from ~fj, the reactivity of the fluorine can cause "worn-holes" in the silicon, also destroying transistors. The solution to these problems is a so-called diffusion barrier, which will allow current to pass from the transistors to the wiring, but will prevent reactions between silicon and the metal.

  20. Development of a new laser heating system for thin film growth by chemical vapor deposition

    Science.gov (United States)

    Fujimoto, Eiji; Sumiya, Masatomo; Ohnishi, Tsuyoshi; Lippmaa, Mikk; Takeguchi, Masaki; Koinuma, Hideomi; Matsumoto, Yuji

    2012-09-01

    We have developed a new laser heating system for thin film growth by chemical vapor deposition (CVD). A collimated beam from a high-power continuous-wave 808 nm semiconductor laser was directly introduced into a CVD growth chamber without an optical fiber. The light path of the heating laser inside the chamber was isolated mechanically from the growth area by bellows to protect the optics from film coating. Three types of heat absorbers, (10 × 10 × 2 mm3) consisting of SiC, Ni/NiOx, or pyrolytic graphite covered with pyrolytic BN (PG/PBN), located at the backside of the substrate, were tested for heating performance. It was confirmed that the substrate temperature could reach higher than 1500 °C in vacuum when a PG/PBN absorber was used. A wide-range temperature response between 400 °C and 1000 °C was achieved at high heating and cooling rates. Although the thermal energy loss increased in a H2 gas ambient due to the higher thermal conductivity, temperatures up to 1000°C were achieved even in 200 Torr H2. We have demonstrated the capabilities of this laser heating system by growing ZnO films by metalorganic chemical vapor deposition. The growth mode of ZnO films was changed from columnar to lateral growth by repeated temperature modulation in this laser heating system, and consequently atomically smooth epitaxial ZnO films were successfully grown on an a-plane sapphire substrate.

  1. Prediction of aqueous solubility, vapor pressure and critical micelle concentration for aquatic partitioning of perfluorinated chemicals.

    Science.gov (United States)

    Bhhatarai, Barun; Gramatica, Paola

    2011-10-01

    The majority of perfluorinated chemicals (PFCs) are of increasing risk to biota and environment due to their physicochemical stability, wide transport in the environment and difficulty in biodegradation. It is necessary to identify and prioritize these harmful PFCs and to characterize their physicochemical properties that govern the solubility, distribution and fate of these chemicals in an aquatic ecosystem. Therefore, available experimental data (10-35 compounds) of three important properties: aqueous solubility (AqS), vapor pressure (VP) and critical micelle concentration (CMC) on per- and polyfluorinated compounds were collected for quantitative structure-property relationship (QSPR) modeling. Simple and robust models based on theoretical molecular descriptors were developed and externally validated for predictivity. Model predictions on selected PFCs were compared with available experimental data and other published in silico predictions. The structural applicability domains (AD) of the models were verified on a bigger data set of 221 compounds. The predicted properties of the chemicals that are within the AD, are reliable, and they help to reduce the wide data gap that exists. Moreover, the predictions of AqS, VP, and CMC of most common PFCs were evaluated to understand the aquatic partitioning and to derive a relation with the available experimental data of bioconcentration factor (BCF).

  2. Synthesis of scalable and tunable slightly oxidized graphene via chemical vapor deposition.

    Science.gov (United States)

    Sagar, Rizwan Ur Rehman; Namvari, Mina; Navale, Sachin T; Stadler, Florian J

    2017-03-15

    Semiconducting, large sheets of carbon as an active material in optoelectronic research are missing and reduced graphene oxide (rGO) can be a good candidate. However, chemical synthesis cannot produce large sheets of rGO (i.e. maximum: 20-30μm) as well as high quality rGO due to the restraints of fabrication method. Thus, a novel strategy for the synthesis of large sheets of semiconducting rGO is urgently required. Large area slightly oxidized graphene (SOG) is fabricated at the interface of silicon dioxide (SiO2) and silicon via Chemical Vapor Deposition (CVD) method, herein for the first time. Carbon atoms bond with oxygen functionalities (i.e. CO, COH) at the time of diffusion in SiO2 allowing for C/O ratios from 7 to 10 adjustable by the variation of SiO2 thickness, indicating the tunable oxidation. Moreover, electronic structure and morphology of SOG are similar to the chemically grown rGO. The fabrication mechanism of SOG is also investigated. Copyright © 2016 Elsevier Inc. All rights reserved.

  3. Synthesis of coaxial nanotubes of polyaniline and poly(hydroxyethyl methacrylate by oxidative/initiated chemical vapor deposition

    Directory of Open Access Journals (Sweden)

    Alper Balkan

    2017-04-01

    Full Text Available Vapor-phase synthesis techniques of polymeric nanostructures offer unique advantages over conventional, solution-based techniques because of their solventless nature. In this work, we report the fabrication of coaxial polymer nanotubes using two different chemical vapor deposition methods. The fabrication process involves the deposition of an outer layer of the conductive polyaniline (PANI by oxidative chemical vapor deposition, followed by the deposition of the inner layer of poly(2-hydroxyethyl methacrylate (pHEMA hydrogel by initiated chemical vapor deposition. The vapor-phase techniques allowed for fine-tuning of the thickness of the individual layers, keeping the functionalities of the polymers intact. The response of the single components and the coaxial nanotubes to changes in humidity was investigated for potential humidity sensor applications. For single-component conductive PANI nanotubes, the resistance changed parabolically with relative humidity because of competing effects of doping and swelling of the PANI polymer under humid conditions. Introducing a hydrogel inner layer increased the overall resistance, and enhanced swelling, which caused the resistance to continuously increase with relative humidity.

  4. Synthesis of coaxial nanotubes of polyaniline and poly(hydroxyethyl methacrylate) by oxidative/initiated chemical vapor deposition.

    Science.gov (United States)

    Balkan, Alper; Armagan, Efe; Ozaydin Ince, Gozde

    2017-01-01

    Vapor-phase synthesis techniques of polymeric nanostructures offer unique advantages over conventional, solution-based techniques because of their solventless nature. In this work, we report the fabrication of coaxial polymer nanotubes using two different chemical vapor deposition methods. The fabrication process involves the deposition of an outer layer of the conductive polyaniline (PANI) by oxidative chemical vapor deposition, followed by the deposition of the inner layer of poly(2-hydroxyethyl methacrylate) (pHEMA) hydrogel by initiated chemical vapor deposition. The vapor-phase techniques allowed for fine-tuning of the thickness of the individual layers, keeping the functionalities of the polymers intact. The response of the single components and the coaxial nanotubes to changes in humidity was investigated for potential humidity sensor applications. For single-component conductive PANI nanotubes, the resistance changed parabolically with relative humidity because of competing effects of doping and swelling of the PANI polymer under humid conditions. Introducing a hydrogel inner layer increased the overall resistance, and enhanced swelling, which caused the resistance to continuously increase with relative humidity.

  5. Azo dye decolorization assisted by chemical and biogenic sulfide

    Energy Technology Data Exchange (ETDEWEB)

    Prato-Garcia, Dorian [Laboratory for Research on Advanced Processes for Water Treatment, Unidad Académica Juriquilla, Instituto de Ingeniería, Universidad Nacional Autónoma de México, Blvd. Juriquilla 3001, Querétaro 76230 (Mexico); Cervantes, Francisco J. [División de Ciencias Ambientales, Instituto Potosino de Investigación Científica y Tecnológica, Camino a la Presa de San José 2055, San Luis Potosí 78216 (Mexico); Buitrón, Germán, E-mail: gbuitronm@ii.unam.mx [Laboratory for Research on Advanced Processes for Water Treatment, Unidad Académica Juriquilla, Instituto de Ingeniería, Universidad Nacional Autónoma de México, Blvd. Juriquilla 3001, Querétaro 76230 (Mexico)

    2013-04-15

    Highlights: ► Azo dyes were reduced efficiently by chemical and biogenic sulfide. ► Biogenic sulfide was more efficient than chemical sulfide. ► There was no competition between dyes and sulfate for reducing equivalents. ► Aromatic amines barely affected the sulfate-reducing process. -- Abstract: The effectiveness of chemical and biogenic sulfide in decolorizing three sulfonated azo dyes and the robustness of a sulfate-reducing process for simultaneous decolorization and sulfate removal were evaluated. The results demonstrated that decolorization of azo dyes assisted by chemical sulfide and anthraquinone-2,6-disulfonate (AQDS) was effective. In the absence of AQDS, biogenic sulfide was more efficient than chemical sulfide for decolorizing the azo dyes. The performance of sulfate-reducing bacteria in attached-growth sequencing batch reactors suggested the absence of competition between the studied azo dyes and the sulfate-reducing process for the reducing equivalents. Additionally, the presence of chemical reduction by-products had an almost negligible effect on the sulfate removal rate, which was nearly constant (94%) after azo dye injection.

  6. Pore-scale modeling of vapor transport in partially saturated capillary tube with variable area using chemical potential

    DEFF Research Database (Denmark)

    Addassi, Mouadh; Schreyer, Lynn; Johannesson, Björn

    2016-01-01

    Here we illustrate the usefulness of using the chemical potential as the primary unknown by modeling isothermal vapor transport through a partially saturated cylindrically symmetric capillary tube of variable cross-sectional area using a single equation. There are no fitting parameters and the nu......Here we illustrate the usefulness of using the chemical potential as the primary unknown by modeling isothermal vapor transport through a partially saturated cylindrically symmetric capillary tube of variable cross-sectional area using a single equation. There are no fitting parameters...... and the numerical solutions to the equation are compared with experimental results with excellent agreement. We demonstrate that isothermal vapor transport can be accurately modeled without modeling the details of the contact angle, microscale temperature fluctuations, or pressure fluctuations using a modification...

  7. Electrical properties of low pressure chemical vapor deposited silicon nitride thin films for temperatures up to 650 °C

    NARCIS (Netherlands)

    Tiggelaar, Roald M.; Groenland, A.W.; Sanders, Remco G.P.; Gardeniers, Johannes G.E.

    2009-01-01

    The results of a study on electrical conduction in low pressure chemical vapor deposited silicon nitride thin films for temperatures up to 650 °C are described. Current density versus electrical field characteristics are measured as a function of temperature for 100 and 200 nm thick stoichiometric

  8. Controlled Growth of Non-Uniform Arsenic Profiles in Silicon Reduced-Pressure Chemical Vapor Deposition Epitaxial Layers

    NARCIS (Netherlands)

    Popadic, M.; Scholtes, T.L.M.; De Boer, W.; Sarubbi, F.; Nanver, L.K.

    2009-01-01

    An empirical model of As surface segregation during reduced-pressure chemical vapor deposition Si epitaxy is presented. This segregation mechanism determines the resulting doping profile in the grown layer and is here described by a model of simultaneous and independent As adsorption and segregation

  9. Extension of the lifetime of tantalum filaments in the hot-wire (Cat) 3 Chemical Vapor Deposition process

    CSIR Research Space (South Africa)

    Knoesen, D

    2008-01-01

    Full Text Available One of the prime components of a hot-wire (Cat) Chemical Vapor Deposition system is the filament used to pyro-catalytically crack the gases like silane. Burnt out tantalum filaments were studied to determine the possible improvement of lifetime...

  10. Plasma-enhanced chemical vapor deposited silicon oxynitride films for optical waveguide bridges for use in mechanical sensors

    DEFF Research Database (Denmark)

    Storgaard-Larsen, Torben; Leistiko, Otto

    1997-01-01

    In this paper the influence of RF power, ammonia flow, annealing temperature, and annealing time on the optical and mechanical properties of plasma-enhanced chemically vapor deposited silicon oxynitride films, is presented. A low refractive index (1.47 to 1.48) film having tensile stress has been...

  11. Vertically aligned carbon nanotube field emitter arrays with Ohmic base contact to silicon by Fe-catalyzed chemical vapor deposition

    NARCIS (Netherlands)

    Morassutto, M.; Tiggelaar, Roald M.; Smithers, M.A.; Smithers, M.A.; Gardeniers, Johannes G.E.

    2016-01-01

    Abstract In this study, dense arrays of aligned carbon nanotubes are obtained by thermal catalytic chemical vapor deposition, using Fe catalyst dispersed on a thin Ta layer. Alignment of the carbon nanotubes depends on the original Fe layer thickness from which the catalyst dispersion is obtained by

  12. The influence of methanol addition during the film growth of SnO 2 by atmospheric pressure chemical vapor deposition

    NARCIS (Netherlands)

    Volintiru, I.; Graaf, A. de; Deelen, J. van; Poodt, P.W.G.

    2011-01-01

    Undoped tin oxide (SnO2) thin films have been deposited in a stagnant point flow chemical vapor deposition reactor from a water/tin tetrachloride mixture. By adding methanol during the deposition process the film electrical properties change significantly: ten times more conductive SnO 2 films are

  13. Laser-induced chemical vapor deposition of nanostructured silicon carbonitride thin films

    Science.gov (United States)

    Besling, W. F. A.; Goossens, A.; Meester, B.; Schoonman, J.

    1998-01-01

    Laser-induced chemical vapor deposition of silicon carbonitride thin films has been investigated using a continuous wave CO2 laser in parallel configuration with the substrate. The reactant gases in this process, hexamethyl disilazane and ammonia, are rapidly heated by CO2 laser radiation due to their absorption of the laser energy. Polymerlike silicon carbonitride films or agglomerated nanosized particles are formed depending on process conditions. Dense, smooth films or nanostructured deposits have been synthesized at low substrate temperatures (Tssilicon and can be obtained with controlled microstructures. Surface morphology, composition, and type of chemical bonding have been studied with electron microscopy and spectroscopic analysis and are correlated to the most important laser process parameters. X-ray photoelectron spectroscopy and reflectance Fourier transform infrared spectroscopy show that the deposits consist of Si-N, Si-C, and Si-O bonds, linked together in a x-ray amorphous, polymerlike structure. The nitrogen content is about 40% and can be varied by adding ammonia to the reactant gas flow. The layers are readily contaminated with oxygen after exposure to air, caused by hydrolysis and/or oxidation.

  14. A directly patternable click-active polymer film via initiated chemical vapor deposition (iCVD)

    Energy Technology Data Exchange (ETDEWEB)

    Im, Sung Gap; Kim, Byeong-Su; Tenhaeff, Wyatt E.; Hammond, Paula T. [Department of Chemical Engineering and Institute for Soldier Nanotechnologies, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139 (United States); Gleason, Karen K., E-mail: kkg@mit.ed [Department of Chemical Engineering and Institute for Soldier Nanotechnologies, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139 (United States)

    2009-04-30

    A new 'click chemistry' active functional polymer film was directly obtained from a commercially available monomer of propargyl acrylate (PA) via easy, one-step process of initiated chemical vapor deposition (iCVD). Fourier transform infrared (FTIR) spectra confirmed that significant amount of the click-active acetylene functional group was retained after the iCVD process. The degree of crosslinking could be controlled by intentionally adding crosslinker, such as ethylene glycol diacrylate (EGDA) that was polymerized with PA to form click-active, completely insoluble copolymer. The formed iCVD polymers could also be grafted on various inorganic substrates with silane coupling agents. These crosslinking and grafting techniques give iCVD polymers chemical and mechanical stability, which allows iCVD polymers applicable to various click chemistry without any modification of reaction conditions. Pre-patterned iCVD polymer could be obtained via photolithography and an azido-functionalized dye molecule was also successfully attached on iCVD polymer via click chemistry. Moreover, pPA film demonstrated sensitivity to e-beam irradiation, which enabled clickable substrates having nanometer scale patterns without requiring the use of an additional e-beam resist. Direct e-beam exposure of this multifunctional iCVD layer, a 200 nm pattern, and QD particles were selectively conjugated on the substrates via click chemistry. Thus, iCVD pPA has shown dual functionality as of 'clickable' e-beam sensitive material.

  15. Chemical vapor deposition growth of boron–carbon–nitrogen layers from methylamine borane thermolysis products

    Science.gov (United States)

    Leardini, Fabrice; Flores, Eduardo; Galvis E, Andrés R.; Ferrer, Isabel J.; Ramón Ares, José; Sánchez, Carlos; Molina, Pablo; van der Meulen, Herko P.; Gómez Navarro, Cristina; López Polin, Guillermo; Urbanos, Fernando J.; Granados, Daniel; García-García, F. Javier; Demirci, Umit B.; Yot, Pascal G.; Mastrangelo, Filippo; Grazia Betti, Maria; Mariani, Carlo

    2018-01-01

    This work investigates the growth of B–C–N layers by chemical vapor deposition using methylamine borane (MeAB) as the single-source precursor. MeAB has been synthesized and characterized, paying particular attention to the analysis of its thermolysis products, which are the gaseous precursors for B–C–N growth. Samples have been grown on Cu foils and transferred onto different substrates for their morphological, structural, chemical, electronic and optical characterizations. The results of these characterizations indicate a segregation of h-BN and graphene-like (Gr) domains. However, there is an important presence of B and N interactions with C at the Gr borders, and of C interacting at the h-BN-edges, respectively, in the obtained nano-layers. In particular, there is a significant presence of C–N bonds, at Gr/h-BN borders and in the form of N doping of Gr domains. The overall B:C:N contents in the layers is close to 1:3:1.5. A careful analysis of the optical bandgap determination of the obtained B–C–N layers is presented, discussed and compared with previous seminal works with samples of similar composition.

  16. Monolayer MoSe 2 Grown by Chemical Vapor Deposition for Fast Photodetection

    KAUST Repository

    Chang, Yung-Huang

    2014-08-26

    Monolayer molybdenum disulfide (MoS2) has become a promising building block in optoelectronics for its high photosensitivity. However, sulfur vacancies and other defects significantly affect the electrical and optoelectronic properties of monolayer MoS2 devices. Here, highly crystalline molybdenum diselenide (MoSe2) monolayers have been successfully synthesized by the chemical vapor deposition (CVD) method. Low-temperature photoluminescence comparison for MoS2 and MoSe 2 monolayers reveals that the MoSe2 monolayer shows a much weaker bound exciton peak; hence, the phototransistor based on MoSe2 presents a much faster response time (<25 ms) than the corresponding 30 s for the CVD MoS2 monolayer at room temperature in ambient conditions. The images obtained from transmission electron microscopy indicate that the MoSe exhibits fewer defects than MoS2. This work provides the fundamental understanding for the differences in optoelectronic behaviors between MoSe2 and MoS2 and is useful for guiding future designs in 2D material-based optoelectronic devices. © 2014 American Chemical Society.

  17. Continuous, Highly Flexible, and Transparent Graphene Films by Chemical Vapor Deposition for Organic Photovoltaics

    KAUST Repository

    Gomez De Arco, Lewis

    2010-05-25

    We report the implementation of continuous, highly flexible, and transparent graphene films obtained by chemical vapor deposition (CVD) as transparent conductive electrodes (TCE) in organic photovoltaic cells. Graphene films were synthesized by CVD, transferred to transparent substrates, and evaluated in organic solar cell heterojunctions (TCE/poly-3,4- ethylenedioxythiophene:poly styrenesulfonate (PEDOT:PSS)/copper phthalocyanine/fullerene/bathocuproine/aluminum). Key to our success is the continuous nature of the CVD graphene films, which led to minimal surface roughness (∼ 0.9 nm) and offered sheet resistance down to 230 Ω/sq (at 72% transparency), much lower than stacked graphene flakes at similar transparency. In addition, solar cells with CVD graphene and indium tin oxide (ITO) electrodes were fabricated side-by-side on flexible polyethylene terephthalate (PET) substrates and were confirmed to offer comparable performance, with power conversion efficiencies (η) of 1.18 and 1.27%, respectively. Furthermore, CVD graphene solar cells demonstrated outstanding capability to operate under bending conditions up to 138°, whereas the ITO-based devices displayed cracks and irreversible failure under bending of 60°. Our work indicates the great potential of CVD graphene films for flexible photovoltaic applications. © 2010 American Chemical Society.

  18. Chemically assisted in situ recovery of oil shale

    Energy Technology Data Exchange (ETDEWEB)

    Ramierz, W.F.

    1993-12-31

    The purpose of the research project was to investigate the feasibility of the chemically assisted in situ retort method for recovering shale oil from Colorado oil shale. The chemically assisted in situ procedure uses hydrogen chloride (HCl), steam (H{sub 2}O), and carbon dioxide (CO{sub 2}) at moderate pressure to recovery shale oil from Colorado oil shale at temperatures substantially lower than those required for the thermal decomposition of kerogen. The process had been previously examined under static, reaction-equilibrium conditions, and had been shown to achieve significant shale oil recoveries from powdered oil shale. The purpose of this research project was to determine if these results were applicable to a dynamic experiment, and achieve penetration into and recovery of shale oil from solid oil shale. Much was learned about how to perform these experiments. Corrosion, chemical stability, and temperature stability problems were discovered and overcome. Engineering and design problems were discovered and overcome. High recovery (90% of estimated Fischer Assay) was observed in one experiment. Significant recovery (30% of estimated Fischer Assay) was also observed in another experiment. Minor amounts of freed organics were observed in two more experiments. Penetration and breakthrough of solid cores was observed in six experiments.

  19. Hollow nanoporous covalent triazine frameworks via acid vapor-assisted solid phase synthesis for enhanced visible light photoactivity

    KAUST Repository

    Huang, Wei

    2016-04-11

    Herein, we report a novel trifluoromethanesulfonic acid vapor-assisted solid phase synthetic method to construct nanoporous covalent triazine frameworks with highly ordered hollow interconnected pores under mild reaction conditions. This unique solid state synthetic route allows not only the avoidance of undesired side reactions caused by traditional high temperature synthesis, but also the maintaining of defined and precise optical and electronic properties of the nonporous triazine frameworks. Promising photocatalytic activity of the polytriazine networks was demonstrated in the photoreduction reaction of 4-nitrophenol into 4-aminophenol under visible light irradiation.

  20. Silicon nanowire photodetectors made by metal-assisted chemical etching

    Science.gov (United States)

    Xu, Ying; Ni, Chuan; Sarangan, Andrew

    2016-09-01

    Silicon nanowires have unique optical effects, and have potential applications in photodetectors. They can exhibit simple optical effects such as anti-reflection, but can also produce quantum confined effects. In this work, we have fabricated silicon photodetectors, and then post-processed them by etching nanowires on the incident surface. These nanowires were produced by a wet-chemical etching process known as the metal-assisted-chemical etching, abbreviated as MACE. N-type silicon substrates were doped by thermal diffusion from a solid ceramic source, followed by etching, patterning and contact metallization. The detectors were first tested for functionality and optical performance. The nanowires were then made by depositing an ultra-thin film of gold below its percolation thickness to produce an interconnected porous film. This was then used as a template to etch high aspect ratio nanowires into the face of the detectors with a HF:H2O2 mixture.

  1. Behavior and kinetic of hydrolysis of amine boranes in acid media employed in chemical vapor generation.

    Science.gov (United States)

    D'Ulivo, Lucia; Spiniello, Roberto; Onor, Massimo; Campanella, Beatrice; Mester, Zoltan; D'Ulivo, Alessandro

    2018-01-15

    The behavior of NaBH4 (THB) and the amine boranes, NH3BH3 (AB), tertbutylNH2BH3 (TBAB), Me2NHBH3 (DMAB) was investigated in continuous flow chemical vapor generation of H2Se from aqueous Se(IV) coupled with atomic absorption spectrometry. Unexpected higher efficiency of H2Se generation was obtained with amine boranes compared to THB (TBAB > AB > THB) using millimolar concentration of reductant (0.001-0.1 mol L(-1)) under strongly acidic conditions (HCl, HClO4, H2SO4, HNO3, 0.5-5 mol L(-1) H(+)). Analytical applicability of the CVG system was tested by the determination of Se(IV) in natural water samples certified reference materials, using 0.01 mol L(-1) TBAB in 0.5 M H2SO4. In order to explain this unexpected higher efficiency of amine boranes with respect of THB, the kinetic of hydrolysis of AB, TBAB and DMAB was investigated in acid media typically employed in chemical vapor generation for trace element determination. The kinetic was investigated by monitoring the rate the hydrogen gas evolved during hydrolysis, using a laboratory made thermostated reaction cell. Kinetics were measured for AB, TBAB and DMAB in 0.1, 0.5, 5 mol L(-1) HCl or HClO4 reaction media and in 0.1 mol L(-1) cysteine +0.1 mol L(-1) HCl or HClO4 buffer, for reaction times from 0 to 30 min. Under strongly acidic conditions, the rates of hydrogen evolution produced by amine boranes hydrolysis appear to be much slower than those predicted by a pseudo-first order reaction and using the rate constants reported in the literature. This suggests that, at elevated acidities (5 mol L(-1) HCl or HClO4), the hydrolysis of amine boranes takes place in two steps, generating a first amount of H2 (0.67-1.15 mol) much faster than the remaining about 2 mol. This evidence indicates a different mechanism of hydrolysis to the one accepted in the literature for amine boranes. The relatively high efficiencies of H2Se observed with amine borane reduction of inorganic Se(IV) at elevated

  2. X-ray absorption study of diamond films grown by chemical vapor deposition

    Energy Technology Data Exchange (ETDEWEB)

    Yang, X.; Ruckman, M.W.; Skotheim, T.A. (Brookhaven National Laboratory, Upton, New York 11973 (USA)); den Boer, M.; Zheng, Y. (The City University of New York, New York, New York 10021 (USA)); Badzian, A.R.; Badzian, T.; Messier, R. (The Pennsylvania State University, University Park, Pennsylvania 16802 (USA)); Srivatsa, A.R. (Moltech Corporation, Stony Brook, New York 11974 (USA))

    1991-05-01

    Carbon {ital k}-edge x-ray absorption fine structure (XAFS) is used to study the structure and bonding of chemical vapor deposition (CVD) grown diamond and diamond-like carbon films. Diamond films grown at 875 {degree}C on silicon using a 1% CH{sub 4} /H{sub 2} mixture have near-edge spectra resembling type 1(a) natural diamond. The {ital k}-edges of the diamond-like films grown by electron cyclotron resonance CVD at 200 {degree}C using 10{sup {minus}4} Torr of CH{sub 4} show a broad main peak lacking the sharp structure of graphite or diamond. Comparing the near edges of the CVD diamond film with other carbon compounds (i.e., graphite) and the CVD diamond film, the diamond-like film shows a strong {pi}* feature at 285 eV indicative of sp{sup 2} bonded carbon and a feature at 289 eV, the {sigma}*(C--H) resonance indicating C--H bonds. The relatively weak extended x-ray absorption fine structure (EXAFS) shows that the diamond-like carbon film is highly disordered on an atomic level.

  3. Robust numerical simulation of porosity evolution in chemical vapor infiltration III: three space dimension

    CERN Document Server

    Jin Shi

    2003-01-01

    Chemical vapor infiltration (CVI) process is an important technology to fabricate ceramic matrix composites (CMC's). In this paper, a three-dimension numerical model is presented to describe pore microstructure evolution during the CVI process. We extend the two-dimension model proposed in [S. Jin, X.L. Wang, T.L. Starr, J. Mater. Res. 14 (1999) 3829; S. Jin. X.L. Wang, T.L. Starr, X.F. Chen, J. Comp. Phys. 162 (2000) 467], where the fiber surface is modeled as an evolving interface, to the three space dimension. The 3D method keeps all the virtue of the 2D model: robust numerical capturing of topological changes of the interface such as the merging, and fast detection of the inaccessible pores. For models in the kinetic limit, where the moving speed of the interface is constant, some numerical examples are presented to show that this three-dimension model will effectively track the change of porosity, close-off time, location and shape of all pores.

  4. Control of nanoparticle agglomeration through variation of the time-temperature profile in chemical vapor synthesis

    Science.gov (United States)

    Djenadic, Ruzica; Winterer, Markus

    2017-02-01

    The influence of the time-temperature history on the characteristics of nanoparticles such as size, degree of agglomeration, or crystallinity is investigated for chemical vapor synthesis (CVS). A simple reaction-coagulation-sintering model is used to describe the CVS process, and the results of the model are compared to experimental data. Nanocrystalline titania is used as model material. Titania nanoparticles are generated from titanium-tetraisopropoxide (TTIP) in a hot-wall reactor. Pure anatase particles and mixtures of anatase, rutile (up to 11 vol.%), and brookite (up to 29 vol.%) with primary particle sizes from 1.7 nm to 10.5 nm and agglomerate particle sizes from 24.3 nm to 55.6 nm are formed depending on the particle time-temperature history. An inductively heated furnace with variable inductor geometry is used as a novel system to control the time-temperature profile in the reactor externally covering a large wall temperature range from 873 K to 2023 K. An appropriate choice of inductor geometry, i.e. time-temperature profile, can significantly reduce the degree of agglomeration. Other particle characteristics such as crystallinity are also substantially influenced by the time-temperature profile.

  5. Biocompatibility of Titania Nanotube Coatings Enriched with Silver Nanograins by Chemical Vapor Deposition

    Directory of Open Access Journals (Sweden)

    Piotr Piszczek

    2017-09-01

    Full Text Available Bioactivity investigations of titania nanotube (TNT coatings enriched with silver nanograins (TNT/Ag have been carried out. TNT/Ag nanocomposite materials were produced by combining the electrochemical anodization and chemical vapor deposition methods. Fabricated coatings were characterized by scanning electron microscopy (SEM, X-ray photoelectron spectroscopy (XPS, and Raman spectroscopy. The release effect of silver ions from TNT/Ag composites immersed in bodily fluids, has been studied using inductively coupled plasma mass spectrometry (ICP-MS. The metabolic activity assay (MTT was applied to determine the L929 murine fibroblasts adhesion and proliferation on the surface of TNT/Ag coatings. Moreover, the results of immunoassays (using peripheral blood mononuclear cells—PBMCs isolated from rats allowed the estimation of the immunological activity of TNT/Ag surface materials. Antibacterial activity of TNT/Ag coatings with different morphological and structural features was estimated against two Staphylococcus aureus strains (ATCC 29213 and H9. The TNT/Ag nanocomposite layers produced revealed a good biocompatibility promoting the fibroblast adhesion and proliferation. A desirable anti-biofilm activity against the S. aureus reference strain was mainly noticed for these TiO2 nanotube coatings, which contain dispersed Ag nanograins deposited on their surface.

  6. High-strength carbon nanotube/carbon composite fibers via chemical vapor infiltration.

    Science.gov (United States)

    Lee, Jaegeun; Kim, Teawon; Jung, Yeonsu; Jung, Kihoon; Park, Junbeom; Lee, Dong-Myeong; Jeong, Hyeon Su; Hwang, Jun Yeon; Park, Chong Rae; Lee, Kun-Hong; Kim, Seung Min

    2016-12-07

    In this study, we have developed an efficient and scalable method for improving the mechanical properties of carbon nanotube (CNT) fibers. The mechanical properties of as-synthesized CNT fibers are primarily limited by their porous structures and the weak bonding between adjacent CNTs. These result in inefficient load transfer, leading to low tensile strength and modulus. In order to overcome these limitations, we have adopted chemical vapor infiltration (CVI) to efficiently fill the internal voids of the CNT fibers with carbon species which are thermally decomposed from gas phase hydrocarbon. Through the optimization of the processing time, temperature, and gas flow velocity, we have confirmed that carbon species formed by the thermal decomposition of acetylene (C2H2) gas successfully infiltrated into porous CNT fibers and densified them at relatively low temperatures (650-750 °C). As a result, after CVI processing of the as-synthesized CNT fibers under optimum conditions, the tensile strength and modulus increased from 0.6 GPa to 1.7 GPa and from 25 GPa to 127 GPa, respectively. The CVI technique, combined with the direct spinning of CNT fibers, can open up a route to the fast and scalable fabrication of high performance CNT/C composite fibers. In addition, the CVI technique is a platform technology that can be easily adapted into other nano-carbon based yarn-like fibers such as graphene fibers.

  7. Thin CdS films prepared by metalorganic chemical vapor deposition

    Energy Technology Data Exchange (ETDEWEB)

    Hiroshi Uda; Yonezawa, Hideo; Ohtsubo, Yoshikazu; Kosaka, Manabu; Sonomura, Hajimu [Kinki Univ., Osaka (Japan). Faculty of Science and Technology

    2003-01-01

    Polycrystalline CdS thin films have been deposited on borosilicate glass substrates coated with ITO film by metalorganic chemical vapor deposition using dimethyl cadmium and diethyl sulfide as source materials. The growth of CdS film occurred at substrate temperatures within the range of 280-360{sup o}C. The deposition rate increased with increasing VI/II molar ratio at any substrate temperature and showed a maximum value at the VI/II molar ratio of 4. The grain size of as-deposited CdS film prepared at substrate temperatures from 300{sup o}C to 360{sup o}C was about 0.1 {mu}m. The CdS films consist of hexagonal form with a preferential orientation of the (0 0 2) plane parallel to the substrate. Thin CdS film with high optical transmittance was prepared at 350{sup o}C with the VI/II molar ratio of 4. The CdS film deposited by MOCVD may be used as a window layer for CdS/CdTe solar cell.(author)

  8. H2-dependent attachment kinetics and shape evolution in chemical vapor deposition graphene growth

    Science.gov (United States)

    Meca, Esteban; Shenoy, Vivek B.; Lowengrub, John

    2017-09-01

    Experiments on graphene growth through chemical vapor deposition (CVD) involving methane (CH4) and hydrogen (H2) gases reveal a complex shape evolution and a non-monotonic dependence on the partial pressure of H2 ({{p}{{\\text{H}2}}} ). To explain these intriguing observations, we develop a microkinetic model for the stepwise decomposition of CH4 into mobile radicals and consider two possible mechanisms of attachment to graphene crystals: CH radicals to hydrogen-decorated edges of the crystals and C radicals to bare crystal edges. We derive an effective mass flux and an effective kinetic coefficient, both of which depend on {{p}{{\\text{H}2}}} , and incorporate these into a phase field model. The model reproduces both the non-monotonic dependence on {{p}{{\\text{H}2}}} and the characteristic shapes of graphene crystals observed in experiments. At small {{p}{{\\text{H}2}}} , growth is limited by the kinetics of attachment while at large {{p}{{\\text{H}2}}} growth is limited because the effective mass flux is small. We also derive a simple analytical model that captures the non-monotone behavior, enables the two mechanisms of attachment to be distinguished and provides guidelines for CVD growth of defect-free 2D crystals.

  9. Growth study of indium-catalyzed silicon nanowires by plasma enhanced chemical vapor deposition

    Energy Technology Data Exchange (ETDEWEB)

    Zardo, I. [Technische Universitaet Muenchen, Walter Schottky Institut and Physik Department, Garching (Germany); Conesa-Boj, S.; Estrade, S.; Peiro, F. [Universitat de Barcelona, Departament d' Electronica, Barcelona, CAT (Spain); Yu, L.; Roca i Cabarrocas, P. [Ecole Polytechnique, CNRS, LPICM, Palaiseau (France); Morante, J.R. [Universitat de Barcelona, Departament d' Electronica, Barcelona, CAT (Spain); Catalonia Institute for Energy Research, Barcelona, CAT (Spain); Arbiol, J. [Universitat de Barcelona, Departament d' Electronica, Barcelona, CAT (Spain); Institucio Catalana de Recerca i Estudis Avancats (ICREA) and Institut de Ciencia de Materials de Barcelona, CSIC, Bellaterra, CAT (Spain); Fontcuberta i.Morral, A. [Technische Universitaet Muenchen, Walter Schottky Institut and Physik Department, Garching (Germany); Ecole Polytechnique Federale de Lausanne, Laboratoire des Materiaux Semiconducteurs, Institut des Materiaux, Lausanne (Switzerland)

    2010-07-15

    Indium was used as a catalyst for the synthesis of silicon nanowires in a plasma enhanced chemical vapor deposition reactor. In order to foster the catalytic activity of indium, the indium droplets had to be exposed to a hydrogen plasma prior to nanowire growth in a silane plasma. The structure of the nanowires was investigated as a function of the growth conditions by electron microscopy and Raman spectroscopy. The nanowires were found to crystallize along the <111>, <112> or <001> growth direction. When growing on the <112> and <111> directions, they revealed a similar crystal quality and the presence of a high density of twins along the {l_brace}111{r_brace} planes. The high density and periodicity of these twins lead to the formation of hexagonal domains inside the cubic structure. The corresponding Raman signature was found to be a peak at 495 cm{sup -1}, in agreement with previous studies. Finally, electron energy loss spectroscopy indicates an occasional migration of indium during growth. (orig.)

  10. Effect of transition metal salts on the initiated chemical vapor deposition of polymer thin films

    Energy Technology Data Exchange (ETDEWEB)

    Kwong, Philip; Seidel, Scott; Gupta, Malancha, E-mail: malanchg@usc.edu [Mork Family Department of Chemical Engineering and Materials Science, University of Southern California, 925 Bloom Walk, Los Angeles, California 90089 (United States)

    2015-05-15

    In this work, the effect of transition metal salts on the initiated chemical vapor deposition of polymer thin films was studied using x-ray photoelectron spectroscopy. The polymerizations of 4-vinyl pyridine and 1H,1H,2H,2H-perfluorodecyl acrylate were studied using copper(II) chloride (CuCl{sub 2}) and iron(III) chloride (FeCl{sub 3}) as the transition metal salts. It was found that the surface coverages of both poly(4-vinyl pyridine) (P4VP) and poly(1H,1H,2H,2H-perfluorodecyl acrylate) were decreased on CuCl{sub 2}, while the surface coverage of only P4VP was decreased on FeCl{sub 3}. The decreased polymer surface coverage was found to be due to quenching of the propagating radicals by the salt, which led to a reduction of the oxidation state of the metal. The identification of this reaction mechanism allowed for tuning of the effectiveness of the salts to decrease the polymer surface coverage through the adjustment of processing parameters such as the filament temperature. Additionally, it was demonstrated that the ability of transition metal salts to decrease the polymer surface coverage could be extended to the fabrication of patterned cross-linked coatings, which is important for many practical applications such as sensors and microelectronics.

  11. Structure and photoluminescence of molybdenum selenide nanomaterials grown by hot filament chemical vapor deposition

    Energy Technology Data Exchange (ETDEWEB)

    Wang, B.B. [College of Chemistry and Chemical Engineering, Chongqing University of Technology, 69 Hongguang Rd, Lijiatuo, Banan District, Chongqing 400054 (China); Plasma Nanoscience Laboratories, Manufacturing Flagship, Commonwealth Scientific and Industrial Research Organization, P. O. Box 218, Lindfield, NSW 2070 (Australia); Zhu, M.K. [College of Materials Science and Engineering, Beijing University of Technology, Beijing 100124 (China); Ostrikov, K., E-mail: kostya.ostrikov@qut.edu.au [Plasma Nanoscience Laboratories, Manufacturing Flagship, Commonwealth Scientific and Industrial Research Organization, P. O. Box 218, Lindfield, NSW 2070 (Australia); Institute for Future Environments, School of Chemistry, Physics and Mechanical Engineering, Queensland University of Technology, Brisbane, QLD 4000 (Australia); Plasma Nanoscience, School of Physics, The University of Sydney, Sydney, NSW 2006 (Australia); Shao, R.W.; Zheng, K. [Institute of Microstructure and Properties of Advanced Materials, Beijing University of Technology, Beijing 100124 (China)

    2015-10-25

    Molybdenum selenide nanomaterials with different structures are synthesized on silicon substrates coated with gold films by hot filament chemical vapor deposition (HFCVD) in nitrogen environment, where molybdenum trioxide and selenium powders are used as source materials. The structure and composition of the synthesized molybdenum selenide nanomaterials are studied using field emission scanning electron microscopy, transmission electron microscopy, micro-Raman spectroscopy and X-ray photoelectron spectroscopy. The results indicate that the structures of molybdenum selenide change from nanoflakes to nanoparticles with the increase of content of molybdenum trioxide precursor. The photoluminescence (PL) excitation using the 325 nm line of He–Cd laser as the excitation source generates green light with the wavelength of about 512–516 nm. The formation of molybdenum selenide nanomaterials is determined by the decomposition rates of molybdenum trioxide in HFCVD. The possible factors that affect the generation of green PL bands are analyzed. These outcomes of this work enrich our knowledge on the synthesis of transition metal dichalcogenides and contribute to the development of applications of these materials in optoelectronic devices. - Highlights: • Molybdenum selenide nanoflakes, nanoparticles and hybrids produced by HFCVD. • Uncommon MoO{sub 3} and Se precursor co-location and mixing and effective MoO{sub 3} decomposition. • Morphology change from nanoflakes to nanoparticles with higher ratio of MoO{sub 3} precursor. • Strong photoluminescence emission of green light with a wavelength of ∼512–516 nm.

  12. Synthesis of boron nitride nanostructures from catalyst of iron compounds via thermal chemical vapor deposition technique

    Science.gov (United States)

    da Silva, Wellington M.; Ribeiro, Hélio; Ferreira, Tiago H.; Ladeira, Luiz O.; Sousa, Edésia M. B.

    2017-05-01

    For the first time, patterned growth of boron nitride nanostructures (BNNs) is achieved by thermal chemical vapor deposition (TCVD) technique at 1150 °C using a mixture of FeS/Fe2O3 catalyst supported in alumina nanostructured, boron amorphous and ammonia (NH3) as reagent gas. This innovative catalyst was synthesized in our laboratory and systematically characterized. The materials were characterized by X-ray diffraction (XRD), Raman spectroscopy, Fourier-transform infrared spectroscopy (FTIR), Thermogravimetric analysis (TGA), Scanning Electron Microscopy (SEM) and Transmission Electron Microscopy (TEM). The X-ray diffraction profile of the synthesized catalyst indicates the coexistence of three different crystal structures showing the presence of a cubic structure of iron oxide and iron sulfide besides the gamma alumina (γ) phase. The results show that boron nitride bamboo-like nanotubes (BNNTs) and hexagonal boron nitride (h-BN) nanosheets were successfully synthesized. Furthermore, the important contribution of this work is the manufacture of BNNs from FeS/Fe2O3 mixture.

  13. Physically Unclonable Cryptographic Primitives by Chemical Vapor Deposition of Layered MoS2.

    Science.gov (United States)

    Alharbi, Abdullah; Armstrong, Darren; Alharbi, Somayah; Shahrjerdi, Davood

    2017-11-27

    Physically unclonable cryptographic primitives are promising for securing the rapidly growing number of electronic devices. Here, we introduce physically unclonable primitives from layered molybdenum disulfide (MoS2) by leveraging the natural randomness of their island growth during chemical vapor deposition (CVD). We synthesize a MoS2 monolayer film covered with speckles of multilayer islands, where the growth process is engineered for an optimal speckle density. Using the Clark-Evans test, we confirm that the distribution of islands on the film exhibits complete spatial randomness, hence indicating the growth of multilayer speckles is a spatial Poisson process. Such a property is highly desirable for constructing unpredictable cryptographic primitives. The security primitive is an array of 2048 pixels fabricated from this film. The complex structure of the pixels makes the physical duplication of the array impossible (i.e., physically unclonable). A unique optical response is generated by applying an optical stimulus to the structure. The basis for this unique response is the dependence of the photoemission on the number of MoS2 layers, which by design is random throughout the film. Using a threshold value for the photoemission, we convert the optical response into binary cryptographic keys. We show that the proper selection of this threshold is crucial for maximizing combination randomness and that the optimal value of the threshold is linked directly to the growth process. This study reveals an opportunity for generating robust and versatile security primitives from layered transition metal dichalcogenides.

  14. Electrical characteristics and hydrogen concentration of chemical vapor deposited silicon dioxide films: Effect of water treatment

    Science.gov (United States)

    Li, S. C.; Murarka, S. P.

    1992-11-01

    The effect of exposing chemical vapor deposited silicon dioxide directly to water has been investigated. Unlike the effect of the water-related traps in thermally grown silicon dioxide, the capacitance-voltage (C-V) shift due to diffused-in water molecules is directly observed without using the method of avalanche injection. The resonate nuclear reaction technique with 15N ion beam has been used to measure the hydrogen concentration of water-boiled, as-deposited, and rapid thermal-annealed silicon dioxide films. These depth profiles show that the hydrogen-containing species, that are most likely water molecules, diffuse in and out and redistribute in the as-deposited and rapid thermal-annealed films. These hydrogen depth profiles also indicate that the amount of diffused-in water molecules in the oxide is limited by the solubility of the water in the oxide. The solubility of water in the oxide annealed at high temperatures is found to be significantly lower than that in the as-deposited oxide. It is found that diffused-in water molecules, in order to satisfy the water solubility of the oxide, play a compensating role in controlling the oxide charges. Water molecules would continue to diffuse in, and interact with oxide charges and produce charges with reverse polarity that compensate the existing oxide charges until water solubility is satisfied.

  15. Chemical vapor deposition growth of large grapheme single crystal from ethanol

    Science.gov (United States)

    Chen, Xiao; Zhao, Pei; Chiashi, Shohei; Maruyama, Shigeo

    2014-03-01

    Ethanol as a precursor has proven effective in the chemical vapor deposition (CVD) synthesis of graphene on both Ni foils and Cu capsule substrates. For applications of graphene in field effect transistors or as transparent conducting electrodes, larger singe-crystal graphene without any grain boundaries shows superior electrical performance and has attracted enormous interests. Here we report a protocol to synthesize large graphene single crystals (up to 600 μm) using ethanol as precursor on commercially-available polycrystalline Cu foils. We explored the mechanism by studying the influences of different growth parameters such as pressure, flow rate and temperature. Low partial pressure and low flow rate of ethanol is essential in achieving low nucleation density over the metal surface and therefore large graphene grains can be obtained. We found that growth temperature dramatically affects the crystallinity and the growth rate of graphene grains. Moreover, this CVD growth of large graphene single crystals involves no electro-polishing or annealing treatments to the metal surface, presenting a significant simplification to the current graphene synthesis process.

  16. Hierarchical chrysanthemum-flower-like carbon nanomaterials grown by chemical vapor deposition

    Science.gov (United States)

    Ding, Er-Xiong; Geng, Hong-Zhang; Wang, Jing; Luo, Zhi-Jia; Li, Guangfen; Wang, Wen-Yi; Li, Lin-Ge; Yang, Hai-Jie; Da, Shi-Xun; Wang, Jie; Jiang, Hua; Kauppinen, Esko I.

    2016-02-01

    Novel hierarchical chrysanthemum-flower-like carbon nanomaterials (CFL-CNMs) were synthesized by thermal chemical vapor deposition based on acetylene decomposition. A scanning electron microscope and a transmission electron microscope were employed to observe the morphology and structure of the unconventional nanostructures. It is found that the CFL-CNMs look like a blooming chrysanthemum with a stem rather than a spherical flower. The carbon flower has an average diameter of 5 μm, an average stem diameter of 150 nm, branch diameters ranging from 20 to 70 nm, and branch lengths ranging from 0.5 to 3 μm. The morphologies of the CFL-CNMs are unlike any of those previously reported. Fishbone-like carbon nanofibers with a spindle-shaped catalyst locating at the tip can also be found. Furthermore, the catalyst split was proposed to elucidate the formation mechanism of CFL-CNMs. A large and glomerate catalyst particle at the tip of the carbon nanofiber splits into smaller catalyst particles which are catalytic-active points for branch formation, resulting in the formation of CFL-CNMs.

  17. TiOx thin films grown on Pd(100) and Pd(111) by chemical vapor deposition

    Science.gov (United States)

    Farstad, M. H.; Ragazzon, D.; Grönbeck, H.; Strømsheim, M. D.; Stavrakas, C.; Gustafson, J.; Sandell, A.; Borg, A.

    2016-07-01

    The growth of ultrathin TiOx (0≤x≤2) films on Pd(100) and Pd(111) surfaces by chemical vapor deposition (CVD), using Titanium(IV)isopropoxide (TTIP) as precursor, has been investigated by high resolution photoelectron spectroscopy, low energy electron diffraction and scanning tunneling microscopy. Three different TiOx phases and one Pd-Ti alloy phase have been identified for both surfaces. The Pd-Ti alloy phase is observed at the initial stages of film growth. Density functional theory (DFT) calculations for Pd(100) and Pd(111) suggest that Ti is alloyed into the second layer of the substrate. Increasing the TTIP dose yields a wetting layer comprising Ti2 + species (TiOx, x ∼0.75). On Pd(100), this phase exhibits a mixture of structures with (3 × 5) and (4 × 5) periodicity with respect to the Pd(100) substrate, while an incommensurate structure is formed on Pd(111). Most importantly, on both surfaces this phase consists of a zigzag pattern similar to observations on other reactive metal surfaces. Further increase in coverage results in growth of a fully oxidized (TiO2) phase on top of the partially oxidized layer. Preliminary investigations indicate that the fully oxidized phase on both Pd(100) and Pd(111) may be the TiO2(B) phase.

  18. Control of nanoparticle agglomeration through variation of the time-temperature profile in chemical vapor synthesis

    Energy Technology Data Exchange (ETDEWEB)

    Djenadic, Ruzica; Winterer, Markus, E-mail: markus.winterer@uni-due.de [Universität Duisburg-Essen, Nanoparticle Process Technology, Faculty of Engineering and CENIDE (Germany)

    2017-02-15

    The influence of the time-temperature history on the characteristics of nanoparticles such as size, degree of agglomeration, or crystallinity is investigated for chemical vapor synthesis (CVS). A simple reaction-coagulation-sintering model is used to describe the CVS process, and the results of the model are compared to experimental data. Nanocrystalline titania is used as model material. Titania nanoparticles are generated from titanium-tetraisopropoxide (TTIP) in a hot-wall reactor. Pure anatase particles and mixtures of anatase, rutile (up to 11 vol.%), and brookite (up to 29 vol.%) with primary particle sizes from 1.7 nm to 10.5 nm and agglomerate particle sizes from 24.3 nm to 55.6 nm are formed depending on the particle time-temperature history. An inductively heated furnace with variable inductor geometry is used as a novel system to control the time-temperature profile in the reactor externally covering a large wall temperature range from 873 K to 2023 K. An appropriate choice of inductor geometry, i.e. time-temperature profile, can significantly reduce the degree of agglomeration. Other particle characteristics such as crystallinity are also substantially influenced by the time-temperature profile.

  19. Current-Perpendicular-to-Plane Magnetoresistance in Chemical Vapor Deposition-Grown Multilayer Graphene

    Directory of Open Access Journals (Sweden)

    Sandipan Pramanik

    2013-09-01

    Full Text Available Current-perpendicular-to-plane (CPP magnetoresistance (MR effects are often exploited in various state-of-the-art magnetic field sensing and data storage technologies. Most of the CPP-MR devices are artificial layered structures of ferromagnets and non-magnets, and in these devices, MR manifests, due to spin-dependent carrier transmission through the constituent layers. In this work, we explore another class of artificial layered structure in which multilayer graphene (MLG is grown on a metallic substrate by chemical vapor deposition (CVD. We show that depending on the nature of the graphene-metal interaction, these devices can also exhibit large CPP-MR. Magnetoresistance ratios (>100% are at least two orders of magnitude higher than “transferred” graphene and graphitic samples reported in the literature, for a comparable temperature and magnetic field range. This effect is unrelated to spin injection and transport and is not adequately described by any of the MR mechanisms known to date. The simple fabrication process, large magnitude of the MR and its persistence at room temperature make this system an attractive candidate for magnetic field sensing and data storage applications and, also, underscore the need for further fundamental investigations on graphene-metal interactions.

  20. Layer-selective synthesis of bilayer graphene via chemical vapor deposition

    Science.gov (United States)

    Yang, Ning; Choi, Kyoungjun; Robertson, John; Park, Hyung Gyu

    2017-09-01

    A controlled synthesis of high-quality AB-stacked bilayer graphene by chemical vapor deposition demands a detailed understanding of the mechanism and kinetics. By decoupling the growth of the two layers via a growth-and-regrowth scheme, we report the kinetics and termination mechanisms of the bilayer graphene growth on copper. We observe, for the first time, that the secondary layer growth follows Gompertzian kinetics. Our observations affirm the postulate of a time-variant transition from a mass-transport-limited to a reaction-limited regimes and identify the mechanistic disparity between the monolayer growth and the secondary-layer expansion underneath the monolayer cover. It is the continuous carbon supply that drives the expansion of the graphene secondary layer, rather than the initially captured carbon amount, suggesting an essential role of the surface diffusion of reactant adsorbates in the interspace between the top graphene layer and the underneath copper surface. We anticipate that the layer selectivity of the growth relies on the entrance energetics of the adsorbed reactants to the graphene-copper interspace across the primary-layer edge, which could be engineered by tailoring the edge termination state. The temperature-reliant saturation area of the secondary-layer expansion is understood as a result of competitive attachment of carbon and hydrogen adatoms to the secondary-layer graphene edge.

  1. High Yield Chemical Vapor Deposition Growth of High Quality Large-Area AB Stacked Bilayer Graphene

    Science.gov (United States)

    Liu, Lixin; Zhou, Hailong; Cheng, Rui; Yu, Woo Jong; Liu, Yuan; Chen, Yu; Shaw, Jonathan; Zhong, Xing; Huang, Yu; Duan, Xiangfeng

    2012-01-01

    Bernal stacked (AB stacked) bilayer graphene is of significant interest for functional electronic and photonic devices due to the feasibility to continuously tune its band gap with a vertical electrical field. Mechanical exfoliation can be used to produce AB stacked bilayer graphene flakes but typically with the sizes limited to a few micrometers. Chemical vapor deposition (CVD) has been recently explored for the synthesis of bilayer graphene but usually with limited coverage and a mixture of AB and randomly stacked structures. Herein we report a rational approach to produce large-area high quality AB stacked bilayer graphene. We show that the self-limiting effect of graphene growth on Cu foil can be broken by using a high H2/CH4 ratio in a low pressure CVD process to enable the continued growth of bilayer graphene. A high temperature and low pressure nucleation step is found to be critical for the formation of bilayer graphene nuclei with high AB stacking ratio. A rational design of a two-step CVD process is developed for the growth of bilayer graphene with high AB stacking ratio (up to 90 %) and high coverage (up to 99 %). The electrical transport studies demonstrated that devices made of the as-grown bilayer graphene exhibit typical characteristics of AB stacked bilayer graphene with the highest carrier mobility exceeding 4,000 cm2/V·s at room temperature, comparable to that of the exfoliated bilayer graphene. PMID:22906199

  2. Uniformly Distributed Graphene Domain Grows on Standing Copper via Low-Pressure Chemical Vapor Deposition

    Directory of Open Access Journals (Sweden)

    Shih-Hao Chan

    2013-01-01

    Full Text Available Uniformly distributed graphene domains were synthesized on standing copper foil by a low-pressure chemical vapor deposition system. This method improved the distribution of the graphene domains at different positions on the same piece of copper foil along the forward direction of the gas flow. Scanning electron microscopy (SEM showed the average size of the graphene domains to be about ~20 m. This results show that the sheet resistance of monolayer graphene on a polyethylene terephthalate (PET substrate is about ~359 /□ whereas that of the four-layer graphene films is about ~178 /□, with a transmittance value of 88.86% at the 550 nm wavelength. Furthermore, the sheet resistance can be reduced with the addition of HNO3 resulting in a value of 84 /□. These values meet the absolute standard for touch sensor applications, so we believe that this method can be a candidate for some transparent conductive electrode applications.

  3. Role of hydrogen in graphene chemical vapor deposition growth on a copper surface.

    Science.gov (United States)

    Zhang, Xiuyun; Wang, Lu; Xin, John; Yakobson, Boris I; Ding, Feng

    2014-02-26

    Synthesizing bilayer graphene (BLG), which has a band gap, is an important step in graphene application in microelectronics. Experimentally, it was broadly observed that hydrogen plays a crucial role in graphene chemical vapor deposition (CVD) growth on a copper surface. Here, by using ab initio calculations, we have revealed a crucial role of hydrogen in graphene CVD growth, terminating the graphene edges. Our study demonstrates the following. (i) At a low hydrogen pressure, the graphene edges are not passivated by H and thus tend to tightly attach to the catalyst surface. As a consequence, the diffusion of active C species into the area beneath the graphene top layer (GTL) is prohibited, and therefore, single-layer graphene growth is favored. (ii) At a high hydrogen pressure, the graphene edges tend to be terminated by H, and therefore, its detachment from the catalyst surface favors the diffusion of active C species into the area beneath the GTL to form the adlayer graphene below the GTL; as a result, the growth of BLG or few-layer graphene (FLG) is preferred. This insightful understanding reveals a crucial role of H in graphene CVD growth and paves a way for the controllable synthesis of BLG or FLG. Besides, this study also provides a reasonable explanation for the hydrogen pressure-dependent graphene CVD growth behaviors on a Cu surface.

  4. Synthesis of Graphene Films on Copper Foils by Chemical Vapor Deposition.

    Science.gov (United States)

    Li, Xuesong; Colombo, Luigi; Ruoff, Rodney S

    2016-08-01

    Over the past decade, graphene has advanced rapidly as one of the most promising materials changing human life. Development of production-worthy synthetic methodologies for the preparation of various types of graphene forms the basis for its investigation and applications. Graphene can be used in the forms of either microflake powders or large-area thin films. Graphene powders are prepared by the exfoliation of graphite or the reduction of graphene oxide, while graphene films are prepared predominantly by chemical vapor deposition (CVD) on a variety of substrates. Both metal and dielectric substrates have been explored; while dielectric substrates are preferred over any other substrate, much higher quality graphene large-area films have been grown on metal substrates such as Cu. The focus here is on the progress of graphene synthesis on Cu foils by CVD, including various CVD techniques, graphene growth mechanisms and kinetics, strategies for synthesizing large-area graphene single crystals, graphene transfer techniques, and, finally, challenges and prospects are discussed. © 2016 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  5. Chemical vapor deposition of high quality graphene films from carbon dioxide atmospheres.

    Science.gov (United States)

    Strudwick, Andrew James; Weber, Nils Eike; Schwab, Matthias Georg; Kettner, Michel; Weitz, R Thomas; Wünsch, Josef R; Müllen, Klaus; Sachdev, Hermann

    2015-01-27

    The realization of graphene-based, next-generation electronic applications essentially depends on a reproducible, large-scale production of graphene films via chemical vapor deposition (CVD). We demonstrate how key challenges such as uniformity and homogeneity of the copper metal substrate as well as the growth chemistry can be improved by the use of carbon dioxide and carbon dioxide enriched gas atmospheres. Our approach enables graphene film production protocols free of elemental hydrogen and provides graphene layers of superior quality compared to samples produced by conventional hydrogen/methane based CVD processes. The substrates and resulting graphene films were characterized by scanning electron microscopy (SEM), energy dispersive X-ray spectroscopy (EDX) and Raman microscopy, sheet resistance and transport measurements. The superior quality of the as-grown graphene films on copper is indicated by Raman maps revealing average G band widths as low as 18 ± 8 cm(-1) at 514.5 nm excitation. In addition, high charge carrier mobilities of up to 1975 cm(2)/(V s) were observed for electrons in transferred films obtained from a carbon dioxide based growth protocol. The enhanced graphene film quality can be explained by the mild oxidation properties of carbon dioxide, which at high temperatures enables an uniform conditioning of the substrates by an efficient removal of pre-existing and emerging carbon impurities and a continuous suppression and in situ etching of carbon of lesser quality being co-deposited during the CVD growth.

  6. Controllable poly-crystalline bilayered and multilayered graphene film growth by reciprocal chemical vapor deposition.

    Science.gov (United States)

    Wu, Qinke; Jung, Seong Jun; Jang, Sung Kyu; Lee, Joohyun; Jeon, Insu; Suh, Hwansoo; Kim, Yong Ho; Lee, Young Hee; Lee, Sungjoo; Song, Young Jae

    2015-06-21

    We report the selective growth of large-area bilayered graphene film and multilayered graphene film on copper. This growth was achieved by introducing a reciprocal chemical vapor deposition (CVD) process that took advantage of an intermediate h-BN layer as a sacrificial template for graphene growth. A thin h-BN film, initially grown on the copper substrate using CVD methods, was locally etched away during the subsequent graphene growth under residual H2 and CH4 gas flows. Etching of the h-BN layer formed a channel that permitted the growth of additional graphene adlayers below the existing graphene layer. Bilayered graphene typically covers an entire Cu foil with domain sizes of 10-50 μm, whereas multilayered graphene can be epitaxially grown to form islands a few hundreds of microns in size. This new mechanism, in which graphene growth proceeded simultaneously with h-BN etching, suggests a potential approach to control graphene layers for engineering the band structures of large-area graphene for electronic device applications.

  7. Structural and electronic characterization of graphene grown by chemical vapor deposition and transferred onto sapphire

    Energy Technology Data Exchange (ETDEWEB)

    Joucken, Frédéric, E-mail: frederic.joucken@unamur.be; Colomer, Jean-François; Sporken, Robert; Reckinger, Nicolas

    2016-08-15

    Highlights: • CVD graphene is transferred onto sapphire. • Transport measurements reveal relatively low charge carriers mobility. • Scanning probe microscopy experiments reveal the presence of robust contaminant layers between the graphene and the sapphire, responsible for the low carriers mobility. - Abstract: We present a combination of magnetotransport and local probe measurements on graphene grown by chemical vapor deposition on copper foil and subsequently transferred onto a sapphire substrate. A rather strong p-doping is observed (∼9 × 10{sup 12} cm{sup −2}) together with quite low carrier mobility (∼1350 cm{sup 2}/V s). Atomic force and tunneling imaging performed on the transport devices reveals the presence of contaminants between sapphire and graphene, explaining the limited performance of our devices. The transferred graphene displays ridges similar to those observed whilst graphene is still on the copper foil. We show that, on sapphire, these ridges are made of different thicknesses of the contamination layer and that, contrary to what was reported for hBN or certain transition metal dichalcogenides, no self-cleansing process of the sapphire substrate is observed.

  8. Photoluminescence Segmentation within Individual Hexagonal Monolayer Tungsten Disulfide Domains Grown by Chemical Vapor Deposition.

    Science.gov (United States)

    Sheng, Yuewen; Wang, Xiaochen; Fujisawa, Kazunori; Ying, Siqi; Elias, Ana Laura; Lin, Zhong; Xu, Wenshuo; Zhou, Yingqiu; Korsunsky, Alexander M; Bhaskaran, Harish; Terrones, Mauricio; Warner, Jamie H

    2017-05-03

    We show that hexagonal domains of monolayer tungsten disulfide (WS2) grown by chemical vapor deposition (CVD) with powder precursors can have discrete segmentation in their photoluminescence (PL) emission intensity, forming symmetric patterns with alternating bright and dark regions. Two-dimensional maps of the PL reveal significant reduction within the segments associated with the longest sides of the hexagonal domains. Analysis of the PL spectra shows differences in the exciton to trion ratio, indicating variations in the exciton recombination dynamics. Monolayers of WS2 hexagonal islands transferred to new substrates still exhibit this PL segmentation, ruling out local strain in the regions as the dominant cause. High-power laser irradiation causes preferential degradation of the bright segments by sulfur removal, indicating the presence of a more defective region that is higher in oxidative reactivity. Atomic force microscopy (AFM) images of topography and amplitude modes show uniform thickness of the WS2 domains and no signs of segmentation. However, AFM phase maps do show the same segmentation of the domain as the PL maps and indicate that it is caused by some kind of structural difference that we could not clearly identify. These results provide important insights into the spatially varying properties of these CVD-grown transition metal dichalcogenide materials, which may be important for their effective implementation in fast photo sensors and optical switches.

  9. Large-Area WS2 Film with Big Single Domains Grown by Chemical Vapor Deposition

    Science.gov (United States)

    Liu, Pengyu; Luo, Tao; Xing, Jie; Xu, Hong; Hao, Huiying; Liu, Hao; Dong, Jingjing

    2017-10-01

    High-quality WS2 film with the single domain size up to 400 μm was grown on Si/SiO2 wafer by atmospheric pressure chemical vapor deposition. The effects of some important fabrication parameters on the controlled growth of WS2 film have been investigated in detail, including the choice of precursors, tube pressure, growing temperature, holding time, the amount of sulfur powder, and gas flow rate. By optimizing the growth conditions at one atmospheric pressure, we obtained tungsten disulfide single domains with an average size over 100 μm. Raman spectra, atomic force microscopy, and transmission electron microscopy provided direct evidence that the WS2 film had an atomic layer thickness and a single-domain hexagonal structure with a high crystal quality. And the photoluminescence spectra indicated that the tungsten disulfide films showed an evident layer-number-dependent fluorescence efficiency, depending on their energy band structure. Our study provides an important experimental basis for large-area, controllable preparation of atom-thick tungsten disulfide thin film and can also expedite the development of scalable high-performance optoelectronic devices based on WS2 film.

  10. Modeling of Sheath Ion-Molecule Reactions in Plasma Enhanced Chemical Vapor Deposition of Carbon Nanotubes

    Science.gov (United States)

    Hash, David B.; Govindan, T. R.; Meyyappan, M.

    2004-01-01

    In many plasma simulations, ion-molecule reactions are modeled using ion energy independent reaction rate coefficients that are taken from low temperature selected-ion flow tube experiments. Only exothermic or nearly thermoneutral reactions are considered. This is appropriate for plasma applications such as high-density plasma sources in which sheaths are collisionless and ion temperatures 111 the bulk p!asma do not deviate significantly from the gas temperature. However, for applications at high pressure and large sheath voltages, this assumption does not hold as the sheaths are collisional and ions gain significant energy in the sheaths from Joule heating. Ion temperatures and thus reaction rates vary significantly across the discharge, and endothermic reactions become important in the sheaths. One such application is plasma enhanced chemical vapor deposition of carbon nanotubes in which dc discharges are struck at pressures between 1-20 Torr with applied voltages in the range of 500-700 V. The present work investigates The importance of the inclusion of ion energy dependent ion-molecule reaction rates and the role of collision induced dissociation in generating radicals from the feedstock used in carbon nanotube growth.

  11. Band gap engineering of chemical vapor deposited graphene by in situ BN doping.

    Science.gov (United States)

    Chang, Cheng-Kai; Kataria, Satender; Kuo, Chun-Chiang; Ganguly, Abhijit; Wang, Bo-Yao; Hwang, Jeong-Yuan; Huang, Kay-Jay; Yang, Wei-Hsun; Wang, Sheng-Bo; Chuang, Cheng-Hao; Chen, Mi; Huang, Ching-I; Pong, Way-Faung; Song, Ker-Jar; Chang, Shoou-Jinn; Guo, Jing-Hua; Tai, Yian; Tsujimoto, Masahiko; Isoda, Seiji; Chen, Chun-Wei; Chen, Li-Chyong; Chen, Kuei-Hsien

    2013-02-26

    Band gap opening and engineering is one of the high priority goals in the development of graphene electronics. Here, we report on the opening and scaling of band gap in BN doped graphene (BNG) films grown by low-pressure chemical vapor deposition method. High resolution transmission electron microscopy is employed to resolve the graphene and h-BN domain formation in great detail. X-ray photoelectron, micro-Raman, and UV-vis spectroscopy studies revealed a distinct structural and phase evolution in BNG films at low BN concentration. Synchrotron radiation based XAS-XES measurements concluded a gap opening in BNG films, which is also confirmed by field effect transistor measurements. For the first time, a significant band gap as high as 600 meV is observed for low BN concentrations and is attributed to the opening of the π-π* band gap of graphene due to isoelectronic BN doping. As-grown films exhibit structural evolution from homogeneously dispersed small BN clusters to large sized BN domains with embedded diminutive graphene domains. The evolution is described in terms of competitive growth among h-BN and graphene domains with increasing BN concentration. The present results pave way for the development of band gap engineered BN doped graphene-based devices.

  12. Monolayer MoSe2 grown by chemical vapor deposition for fast photodetection.

    Science.gov (United States)

    Chang, Yung-Huang; Zhang, Wenjing; Zhu, Yihan; Han, Yu; Pu, Jiang; Chang, Jan-Kai; Hsu, Wei-Ting; Huang, Jing-Kai; Hsu, Chang-Lung; Chiu, Ming-Hui; Takenobu, Taishi; Li, Henan; Wu, Chih-I; Chang, Wen-Hao; Wee, Andrew Thye Shen; Li, Lain-Jong

    2014-08-26

    Monolayer molybdenum disulfide (MoS2) has become a promising building block in optoelectronics for its high photosensitivity. However, sulfur vacancies and other defects significantly affect the electrical and optoelectronic properties of monolayer MoS2 devices. Here, highly crystalline molybdenum diselenide (MoSe2) monolayers have been successfully synthesized by the chemical vapor deposition (CVD) method. Low-temperature photoluminescence comparison for MoS2 and MoSe2 monolayers reveals that the MoSe2 monolayer shows a much weaker bound exciton peak; hence, the phototransistor based on MoSe2 presents a much faster response time (<25 ms) than the corresponding 30 s for the CVD MoS2 monolayer at room temperature in ambient conditions. The images obtained from transmission electron microscopy indicate that the MoSe exhibits fewer defects than MoS2. This work provides the fundamental understanding for the differences in optoelectronic behaviors between MoSe2 and MoS2 and is useful for guiding future designs in 2D material-based optoelectronic devices.

  13. Composition and Morphology Control of Metal Dichalcogenides via Chemical Vapor Deposition for Photovoltaic and Nanoelectronic Applications

    Science.gov (United States)

    Samad, Leith L. J.

    The body of work reviewed here encompasses a variety of metal dichalcogenides all synthesized using chemical vapor deposition (CVD) for solar and electronics applications. The first reported phase-pure CVD synthesis of iron pyrite thin films is presented with detailed structural and electrochemical analysis. The phase-pure thin film and improved crystal growth on a metallic backing material represents one of the best options for potential solar applications using iron pyrite. Large tin-sulfur-selenide solid solution plates with tunable bandgaps were also synthesized via CVD as single-crystals with a thin film geometry. Solid solution tin-sulfur-selenide plates were demonstrated to be a new material for solar cells with the first observed solar conversion efficiencies up to 3.1%. Finally, a low temperature molybdenum disulfide vertical heterostructure CVD synthesis with layered controlled growth was achieved with preferential growth enabled by Van der Waals epitaxy. Through recognition of additional reaction parameters, a fully regulated CVD synthesis enabled the controlled growth of 1-6 molybdenum disulfide monolayers for nanoelectronic applications. The improvements in synthesis and materials presented here were all enabled by the control afforded by CVD such that advances in phase purity, growth, and composition control of several metal dichalcogenides were achieved. Further work will be able to take full advantage of these advances for future solar and electronics technologies.

  14. Rapid thermal chemical vapor deposition growth of nanometer-thin SiC on silicon

    Energy Technology Data Exchange (ETDEWEB)

    Steckl, A.J.; Li, J.P. (Univ. of Cincinnati, OH (United States))

    1992-08-28

    Rapid thermal chemical vapor deposition growth of [beta]-SiC ultrathin films on Si (100) was achieved using the carbonization reaction of the silicon substrate with C[sub 3]H[sub 8] gas. Growth rates of 0.5-2 nm s[sup -1] have been achieved at 1100-1300degC using C[sub 3]H[sub 8] flow rates of 7-9 standard cm[sup 3] min[sup -1]. X-ray and electron diffraction indicate single-crystal growth. Therefore nanometer-scale SiC films can be grown by controlling the reaction time to a few seconds. The activation energy at atmospheric pressure is 3.12 eV. The growth rate was found to decrease significantly at higher C[sub 3]H[sub 8] flow rates, leading to films of constant thickness beyond a certain critical reaction time. Using this regime of self-limiting growth, SiC films of 3-5 nm have been grown with relatively little sensitivity to the growth time. (orig.).

  15. Ultraviolet-light-driven doping modulation in chemical vapor deposition grown graphene.

    Science.gov (United States)

    Iqbal, M Z; Iqbal, M W; Khan, M F; Eom, Jonghwa

    2015-08-28

    The tuning of charge carrier density of graphene is an essential factor to achieve the integration of high-efficiency electronic and optoelectronic devices. We demonstrate the reversible doping in graphene using deep ultraviolet (UV) irradiation and treatment with O2 and N2 gases. The Dirac point shift towards a positive gate voltage of chemical vapor deposition grown graphene field-effect transistors confirms the p-type doping, which is observed under UV irradiation and treatment with O2 gas, while it restores its pristine state after treatment with N2 gas under UV irradiation. The emergence of an additional peak in the X-ray photoelectron spectra during UV irradiation and treatment with O2 gas represents the oxidation of graphene, and the elimination of this peak during UV irradiation and treatment with N2 gas reveals the restoration of graphene in its pristine state. The shift in the G and 2D bands in Raman spectra towards higher and then lower wavenumber also suggests p-type doping and then reversible doping in graphene. The controlled doping and its reversibility in large area grown graphene offer a new vision for electronic applications.

  16. Substrate Effect on Plasma Clean Efficiency in Plasma Enhanced Chemical Vapor Deposition System

    Directory of Open Access Journals (Sweden)

    Shiu-Ko JangJian

    2007-01-01

    Full Text Available The plasma clean in a plasma-enhanced chemical vapor deposition (PECVD system plays an important role to ensure the same chamber condition after numerous film depositions. The periodic and applicable plasma clean in deposition chamber also increases wafer yield due to less defect produced during the deposition process. In this study, the plasma clean rate (PCR of silicon oxide is investigated after the silicon nitride deposited on Cu and silicon oxide substrates by remote plasma system (RPS, respectively. The experimental results show that the PCR drastically decreases with Cu substrate compared to that with silicon oxide substrate after numerous silicon nitride depositions. To understand the substrate effect on PCR, the surface element analysis and bonding configuration are executed by X-ray photoelectron spectroscopy (XPS. The high resolution inductively coupled plasma mass spectrometer (HR-ICP-MS is used to analyze microelement of metal ions on the surface of shower head in the PECVD chamber. According to Cu substrate, the results show that micro Cu ion and the CuOx bonding can be detected on the surface of shower head. The Cu ion contamination might grab the fluorine radicals produced by NF3 ddissociation in the RPS and that induces the drastic decrease on PCR.

  17. Selective Chemical Vapor Deposition Growth of Cubic FeGe Nanowires That Support Stabilized Magnetic Skyrmions.

    Science.gov (United States)

    Stolt, Matthew J; Li, Zi-An; Phillips, Brandon; Song, Dongsheng; Mathur, Nitish; Dunin-Borkowski, Rafal E; Jin, Song

    2017-01-11

    Magnetic skyrmions are topologically stable vortex-like spin structures that are promising for next generation information storage applications. Materials that host magnetic skyrmions, such as MnSi and FeGe with the noncentrosymmetric cubic B20 crystal structure, have been shown to stabilize skyrmions upon nanostructuring. Here, we report a chemical vapor deposition method to selectively grow nanowires (NWs) of cubic FeGe out of three possible FeGe polymorphs for the first time using finely ground particles of cubic FeGe as seeds. X-ray diffraction and transmission electron microscopy (TEM) confirm that these micron-length NWs with ∼100 nm to 1 μm diameters have the cubic B20 crystal structure. Although Fe 13 Ge 8 NWs are also formed, the two types of NWs can be readily differentiated by their faceting. Lorentz TEM imaging of the cubic FeGe NWs reveals a skyrmion lattice phase under small applied magnetic fields (∼0.1 T) at 233 K, a skyrmion chain state at lower temperatures (95 K) and under high magnetic fields (∼0.4 T), and a larger skyrmion stability window than bulk FeGe. This synthetic approach to cubic FeGe NWs that support stabilized skyrmions opens a route toward the exploration of new skyrmion physics and devices based on similar nanostructures.

  18. Grain boundary-mediated nanopores in molybdenum disulfide grown by chemical vapor deposition.

    Science.gov (United States)

    Elibol, Kenan; Susi, Toma; O Brien, Maria; Bayer, Bernhard C; Pennycook, Timothy J; McEvoy, Niall; Duesberg, Georg S; Meyer, Jannik C; Kotakoski, Jani

    2017-01-26

    Molybdenum disulfide (MoS 2 ) is a particularly interesting member of the family of two-dimensional (2D) materials due to its semiconducting and tunable electronic properties. Currently, the most reliable method for obtaining high-quality industrial scale amounts of 2D materials is chemical vapor deposition (CVD), which results in polycrystalline samples. As grain boundaries (GBs) are intrinsic defect lines within CVD-grown 2D materials, their atomic structure is of paramount importance. Here, through atomic-scale analysis of micrometer-long GBs, we show that covalently bound boundaries in 2D MoS 2 tend to be decorated by nanopores. Such boundaries occur when differently oriented MoS 2 grains merge during growth, whereas the overlap of grains leads to boundaries with bilayer areas. Our results suggest that the nanopore formation is related to stress release in areas with a high concentration of dislocation cores at the grain boundaries, and that the interlayer interaction leads to intrinsic rippling at the overlap regions. This provides insights for the controlled fabrication of large-scale MoS 2 samples with desired structural properties for applications.

  19. Fabrication of Nanocarbon Composites Using In Situ Chemical Vapor Deposition and Their Applications.

    Science.gov (United States)

    He, Chunnian; Zhao, Naiqin; Shi, Chunsheng; Liu, Enzuo; Li, Jiajun

    2015-09-23

    Nanocarbon (carbon nanotubes (CNTs) and graphene (GN)) composites attract considerable research interest due to their fascinating applications in many fields. Here, recent developments in the field of in situ chemical vapor deposition (CVD) for the design and controlled preparation of advanced nanocarbon composites are highlighted, specifically, CNT-reinforced bulk structural composites, as well as CNT, GN, and CNT/GN functional composites, together with their practical and potential applications. In situ CVD is a very attractive approach for the fabrication of composites because of its engaging features, such as its simplicity, low-cost, versatility, and tunability. The morphologies, structures, dispersion, and interface of the resulting nanocarbon composites can be easily modulated by varying the experimental parameters (such as temperature, catalysts, carbon sources, templates or template catalysts, etc.), which enables a great potential for the in situ synthesis of high-quality nanocarbons with tailored size and dimension for constructing high-performance composites, which has not yet been achieved by conventional methods. In addition, new trends of the in situ CVD toward nanocarbon composites are discussed. © 2015 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  20. Tribological Property of C/C-SiC Composites Fabricated by Isothermal Chemical Vapor Infiltration

    Directory of Open Access Journals (Sweden)

    WANG Yueming

    2017-08-01

    Full Text Available Four kinds of C/C-SiC composites were fabricated by isothermal chemical vapor infiltration (ICVI, and the 2.5D needle-punching carbon felt was taken as the preform. The volume fraction of carbon fiber in felt is 30%. The density of C/C-SiC composites is similar (1.87-1.91 g/cm3, while the weight ratio of SiC is decreased from 56% to 15%. The microstructure and phase composition of C/C-SiC composites were observed by SEM and XRD respectively. Friction and wear behavior of the C/C-SiC composites were investigated with the MM-1000 friction machine. The results show that the average macro hardness of matrix is decreased from 98.2HRA to 65.1HRA with the decrease of SiC content from 56% to 15%, and uniformity of hardness distribution is significantly decreased. Finally, by the analysis of microtopography of friction surface and wear debris, it is found that the superficial hardness has an obvious influence on mechanism of wear during braking process. The wear mechanism of the C/C-SiC composites transforms from grain wear to the combination of grain wear and adherent wear with the decrease of surface hardness. At the same time, the average friction coefficient and mass wear rate is increased obviously during breaking process.

  1. Aspects of nitrogen surface chemistry relevant to TiN chemical vapor deposition

    Energy Technology Data Exchange (ETDEWEB)

    Schulberg, M.T.; Allendorf, M.D.; Outka, D.A.

    1996-08-01

    NH{sub 3} is an important component of many chemical vapor deposition (CVD) processes for TiN films, which are used for diffusion barriers and other applications in microelectronic circuits. In this study, the interaction of NH{sub 3} with TiN surfaces is examined with temperature programmed desorption (TPD) and Auger electron spectroscopy. NH{sub 3} has two adsorption states on TiN: a chemisorbed state and a multilayer state. A new method for analyzing TPD spectra in systems with slow pumping speeds yields activation energies for desorption for the two states of 24 kcal/mol and 7.3 kcal/mol, respectively. The sticking probability into the chemisorption state is {approximately}0.06. These results are discussed in the context of TiN CVD. In addition, the high temperature stability of TiN is investigated. TiN decomposes to its elements only after heating to 1300 K, showing that decomposition is unlikely to occur under CVD conditions.

  2. Optical spectroscopic characterization of amorphous germanium carbide materials obtained by X-Ray Chemical Vapor Deposition

    Directory of Open Access Journals (Sweden)

    Paola Antoniotti

    2015-05-01

    Full Text Available Amorphous germanium carbides have been prepared by X-ray activated Chemical Vapor Deposition from germane/allene systems. The allene percentage and irradiation time (total dose were correlated to the composition, the structural features, and the optical coefficients of the films, as studied by IR and UV-VIS spectroscopic techniques. The materials composition is found to change depending on both the allene percentage in the mixture and the irradiation time. IR spectroscopy results indicate that the solids consist of randomly bound networks of carbon and germanium atoms with hydrogen atoms terminating all the dangling bonds. Moreover, the elemental analysis results, the absence of both unsaturated bonds and CH3 groups into the solids and the absence of allene autocondensation reactions products, indicate that polymerization reactions leading to mixed species, containing Ge-C bonds, are favored. Eopt values around 3.5 eV have been found in most of the cases, and are correlated with C sp3-bonding configuration. The B1/2 value, related to the order degree, has been found to be dependent on solid composition, atoms distribution in the material and hydrogenation degree of carbon atoms.

  3. Initiated chemical vapor deposited nanoadhesive for bonding National Ignition Facility's targets

    Energy Technology Data Exchange (ETDEWEB)

    Lee, Tom [Univ. of California, Berkeley, CA (United States)

    2016-05-19

    Currently, the target fabrication scientists in National Ignition Facility Directorate at Lawrence Livermore National Laboratory (LLNL) is studying the propagation force resulted from laser impulses impacting a target. To best study this, they would like the adhesive used to glue the target substrates to be as thin as possible. The main objective of this research project is to create adhesive glue bonds for NIF’s targets that are ≤ 1 μm thick. Polyglycidylmethacrylate (PGMA) thin films were coated on various substrates using initiated chemical vapor deposition (iCVD). Film quality studies using white light interferometry reveal that the iCVD PGMA films were smooth. The coated substrates were bonded at 150 °C under vacuum, with low inflow of Nitrogen. Success in bonding most of NIF’s mock targets at thicknesses ≤ 1 μm indicates that our process is feasible in bonding the real targets. Key parameters that are required for successful bonding were concluded from the bonding results. They include inert bonding atmosphere, sufficient contact between the PGMA films, and smooth substrates. Average bond strength of 0.60 MPa was obtained from mechanical shearing tests. The bonding failure mode of the sheared interfaces was observed to be cohesive. Future work on this project will include reattempt to bond silica aerogel to iCVD PGMA coated substrates, stabilize carbon nanotube forests with iCVD PGMA coating, and kinetics study of PGMA thermal crosslinking.

  4. Synthesis of Hybrid Silica-Carbon Tubular Structures by Chemical Vapor Deposition with Methane or Ethene

    Directory of Open Access Journals (Sweden)

    Victor R. Sepulveda

    2017-12-01

    Full Text Available Silica microtube and carbon nanotube hybrid structures have been synthesized by catalytic chemical vapor deposition using either methane or ethene as the carbon source, and cobalt-grafted or impregnated silica tubes (200–800 nm as catalyst. The cobalt-grafted catalyst shows a high resistance to reduction (>1000 °C and selectivity to single-wall carbon nanotubes (SWCNT. While ethene deposition produces more carbonaceous material, methane experiments show higher selectivity for SWCNT. After removing the silica with an excess of HF, the carbon nanostructure endured, resulting in a coaxial carbon nanostructure. The novel hybrid nanostructures obtained consist of a submicron-sized tube, with walls that are formed by a succession of carbon/silica/carbon layers to which multiwall (20–25 nm and/or single-wall (0.6–2.0 nm carbon nanotubes are attached. This synthesis approach combines the mechanical properties of carbon nanotubes and the thermal properties of silica tubes into a synergetic nanostructured material, opening further possibilities for polymer reinforcement and potential applications in catalysis.

  5. Feasibility study of the microforming combined with selective chemical vapor deposition

    Directory of Open Access Journals (Sweden)

    Koshimizu Kazushi

    2015-01-01

    Full Text Available Microforming has been received much attention in the recent decades due to the wide use of microparts in electronics and medical applications. For the further functionalization of these micro devices, high functional surfaces with noble metals and nanomaterials are strongly required in bio- and medical fields, such as bio-sensors. To realize an efficient manufacturing process, which can deform the submillimeter scale bulk structure and can construct the micro to nanometer scale structures in one process, the present study proposes a combined process of microforming for metal foils with a selective chemical vapor deposition (SCVD on the active surfaces of the working material. To demonstrate feasibility of this proposed process, feasibility of SCVD of functional materials onto active surfaces of titanium (Ti was investigated. CVD of iron (Fe and carbon nanotubes (CNTs which construct CNTs on the patterned surfaces of the active Ti and non-active Ti oxidation layers were conducted. Ti thin films on silicon substrate and Fe were used as working materials and functional materials respectively. CNTs were grown only on the Ti surface. Consequently, selectivity of the active surface of Ti to the synthesis of Fe particles in CVD was confirmed.

  6. Exploring metalorganic chemical vapor deposition of Si-alloyed Al2O3 dielectrics using disilane

    Science.gov (United States)

    Chan, Silvia H.; Keller, Stacia; Koksaldi, Onur S.; Gupta, Chirag; DenBaars, Steven P.; Mishra, Umesh K.

    2017-04-01

    The alloying of Al2O3 films with Si is a promising route to improve gate dielectric properties in Si- and wide-bandgap- based MOS devices. Here we present a comprehensive investigation of alloyed film growth by metalorganic chemical vapor deposition (MOCVD) using trimethylaluminum, disilane, and oxygen precursors over a variety of temperature and flow conditions. Binary growth rates of Al2O3 and SiO2 were evaluated to explain the aggregate growth kinetics of Si-alloyed Al2O3 films, and refractive indices were used to monitor Si incorporation efficiencies. The temperature dependence of the reaction rate of disilane with oxygen was found to be similar to that of trimethylaluminum and oxygen, leading to well-behaved deposition behavior in the kinetic and mass-transport controlled growth regimes. Compositional predictability and stability was achieved over a wider growth space with disilane-based growths as compared to previous work, which used silane as the Si precursor instead. In situ (Al,Si)O/n-GaN MOS gate stacks were grown and showed increasing reduction of net positive fixed charges with higher Si composition.

  7. Electrical transport properties of graphene nanowalls grown at low temperature using plasma enhanced chemical vapor deposition

    Science.gov (United States)

    Zhao, Rong; Ahktar, Meysam; Alruqi, Adel; Dharmasena, Ruchira; Jasinski, Jacek B.; Thantirige, Rukshan M.; Sumanasekera, Gamini U.

    2017-05-01

    In this work, we report the electrical transport properties of uniform and vertically oriented graphene (graphene nanowalls) directly synthesized on multiple substrates including glass, Si/SiO2 wafers, and copper foils using radio-frequency plasma enhanced chemical vapor deposition (PECVD) with methane (CH4) as the precursor at relatively low temperatures. The temperature for optimum growth was established with the aid of transmission electron microscopy, scanning electron microscopy, and Raman spectroscopy. This approach offers means for low-cost graphene nanowalls growth on an arbitrary substrate with the added advantage of transfer-free device fabrication. The temperature dependence of the electrical transport properties (resistivity and thermopower) were studied in the temperature range, 30-300 K and analyzed with a combination of 2D-variable range hopping (VRH) and thermally activated (TA) conduction mechanisms. An anomalous temperature dependence of the thermopower was observed for all the samples and explained with a combination of a diffusion term having a linear temperature dependence plus a term with an inverse temperature dependence.

  8. Thermal barrier coatings on gas turbine blades: Chemical vapor deposition (Review)

    Science.gov (United States)

    Igumenov, I. K.; Aksenov, A. N.

    2017-12-01

    Schemes are presented for experimental setups (reactors) developed at leading scientific centers connected with the development of technologies for the deposition of coatings using the CVD method: at the Technical University of Braunschweig (Germany), the French Aerospace Research Center, the Materials Research Institute (Tohoku University, Japan) and the National Laboratory Oak Ridge (USA). Conditions and modes for obtaining the coatings with high operational parameters are considered. It is established that the formed thermal barrier coatings do not fundamentally differ in their properties (columnar microstructure, thermocyclic resistance, thermal conductivity coefficient) from standard electron-beam condensates, but the highest growth rates and the perfection of the crystal structure are achieved in the case of plasma-chemical processes and in reactors with additional laser or induction heating of a workpiece. It is shown that CVD reactors can serve as a basis for the development of rational and more advanced technologies for coating gas turbine blades that are not inferior to standard electron-beam plants in terms of the quality of produced coatings and have a much simpler and cheaper structure. The possibility of developing a new technology based on CVD processes for the formation of thermal barrier coatings with high operational parameters is discussed, including a set of requirements for industrial reactors, high-performance sources of vapor precursors, and promising new materials.

  9. Chemical vapor deposition based tungsten disulfide (WS2) thin film transistor

    KAUST Repository

    Hussain, Aftab M.

    2013-04-01

    Tungsten disulfide (WS2) is a layered transition metal dichalcogenide with a reported band gap of 1.8 eV in bulk and 1.32-1.4 eV in its thin film form. 2D atomic layers of metal dichalcogenides have shown changes in conductivity with applied electric field. This makes them an interesting option for channel material in field effect transistors (FETs). Therefore, we show a highly manufacturable chemical vapor deposition (CVD) based simple process to grow WS2 directly on silicon oxide in a furnace and then its transistor action with back gated device with room temperature field effect mobility of 0.1003 cm2/V-s using the Schottky barrier contact model. We also show the semiconducting behavior of this WS2 thin film which is more promising than thermally unstable organic materials for thin film transistor application. Our direct growth method on silicon oxide also holds interesting opportunities for macro-electronics applications. © 2013 IEEE.

  10. Chemical vapor deposition of amorphous tungsten nitride for applications in ultra-large scale interconnect technologies

    Science.gov (United States)

    Kelsey, Jean E.

    Increasing demands on computer chip technology require exploration of novel materials and deposition techniques. The driving need to reduce device dimensions without increasing device delay time has forced a move towards copper interconnects. Copper interconnects require an encapsulating barrier layer to prevent diffusion into the dielectric layer, as well as a passivation layer to protect against oxidation. One potential material for the barrier layer is tungsten nitride (WNx). Tungsten nitride is expected to perform well as a barrier because of its refractory nature and excellent thermal, chemical, and mechanical properties. In addition, it can be deposited in amorphous form. Amorphous materials have no grain boundaries, thereby making grain boundary diffusion, a fast path diffusion mechanism, impossible. In this work, a chemical vapor deposition (CVD) process was developed for the deposition of tungsten nitride. CVD was selected because it has the potential to deposit highly conformal film. High conformality is critical in a barrier layer in order to ensure viable coverage at the bottom and sides of device structures without sacrificing critical space that would be better used by the copper metal. In this manner, the total resistivity of the interconnect is minimized. The CVD WNx process was systematically optimized for film conformality, resistivity and growth rate. This was achieved by thoroughly examining film nucleation and growth characteristics, and analyzing resulting film properties. Adhesion of copper to the CVD films was qualified using stud pull tests, while X-ray diffraction was implemented to determine crystallization temperature of the amorphous phase. Additionally, diffusion barrier properties of the CVD tungsten nitride were assessed using sputter deposited copper, and compared to those of sputter deposited tungsten nitride. Thermally activated barrier failure was studied as a function of barrier thickness using Rutherford backscattering

  11. High Luminescence Efficiency in MoS2 Grown by Chemical Vapor Deposition.

    Science.gov (United States)

    Amani, Matin; Burke, Robert A; Ji, Xiang; Zhao, Peida; Lien, Der-Hsien; Taheri, Peyman; Ahn, Geun Ho; Kirya, Daisuke; Ager, Joel W; Yablonovitch, Eli; Kong, Jing; Dubey, Madan; Javey, Ali

    2016-07-26

    One of the major challenges facing the rapidly growing field of two-dimensional (2D) transition metal dichalcogenides (TMDCs) is the development of growth techniques to enable large-area synthesis of high-quality materials. Chemical vapor deposition (CVD) is one of the leading techniques for the synthesis of TMDCs; however, the quality of the material produced is limited by defects formed during the growth process. A very useful nondestructive technique that can be utilized to probe defects in semiconductors is the room-temperature photoluminescence (PL) quantum yield (QY). It was recently demonstrated that a PL QY near 100% can be obtained in MoS2 and WS2 monolayers prepared by micromechanical exfoliation by treating samples with an organic superacid: bis(trifluoromethane)sulfonimide (TFSI). Here we have performed a thorough exploration of this chemical treatment on CVD-grown MoS2 samples. We find that the as-grown monolayers must be transferred to a secondary substrate, which releases strain, to obtain high QY by TFSI treatment. Furthermore, we find that the sulfur precursor temperature during synthesis of the MoS2 plays a critical role in the effectiveness of the treatment. By satisfying the aforementioned conditions we show that the PL QY of CVD-grown monolayers can be improved from ∼0.1% in the as-grown case to ∼30% after treatment, with enhancement factors ranging from 100 to 1500× depending on the initial monolayer quality. We also found that after TFSI treatment the PL emission from MoS2 films was visible by eye despite the low absorption (5-10%). The discovery of an effective passivation strategy will speed the development of scalable high-performance optoelectronic and electronic devices based on MoS2.

  12. Quantum assisted enhancement of optical magnetometer with squeezed vacuum in hot Rb vapor

    Science.gov (United States)

    Mikhailov, Eugeniy; Horrom, Travis; Singh, Robinjeet

    2012-06-01

    We demonstrate enhancement to the sensitivity of an optical magnetometer based on the nonlinear magneto-optical Faraday effect in ^87Rb vapor with the use of squeezed vacuum. We generate quantum squeezed vacuum states via the polarization self-rotation effect in hot ^87Rb vapor exhibiting noise spectrum suppression ranging from frequencies of a few hundred Hz to several MHz. Injection of such squeezed states into a magneto-optical magnetometer provides broad band noise suppression of close to 2 dB. We study various parameters of the magnetometer such as Rb cell temperature, pump power, and the noise spectrum of the probe signal to identify the most favorable conditions for quantum enhanced magnetometry. Our experimental arrangement offers potential quantum improvement to the most sensitive magnetometers at frequencies down to hundreds of Hz, which can be useful for biological, geophysical, medical, or military sensing applications.

  13. Materials characterization of rapid thermal chemical vapor deposition of titanium disilicide

    Science.gov (United States)

    Gladden-Green, Dannellia Banay

    Technological advancements of novel processes and materials involving refractory metal silicides for ultra large scale integration is of paramount importance to the semiconductor industry. Scaling of devices to meet the demands for increased packing density and speed requires such novel processes and materials. Rapid thermal chemical vapor deposition (RTCVD) of titanium disilicide (TiSisb2) was investigated in an effort to meet some of the challenges of ultra large scale integration (ULSI) technology. Selective RTCVD of TiSisb2 offers an optimal technological vehicle for achieving contacts to ultra-shallow junctions. Of all of the metal silicides, TiSisb2 has the lowest resistivity and meets the microelectronics demands for a thermally stable contact. The research results presented in this dissertation explores the mechanisms of selective RTCVD of TiSisb2 in terms of thermodynamic trends and kinetic driving forces for nucleation and growth. The present research addresses the qualitative and quantitative parameters that affect the controlling mechanisms for nucleation and therefore the results provide significant data and theoretical insights into a state-of-the-art process. Just as the fundamental building block in understanding the kinetic constraints of a process lie in the realm of thermodynamic exploration, understanding the complex processes involved in RTCVD TiSisb2 begin with characterization of the mechanisms governing thin film nucleation. In this work, the early stages of growth are investigated as they offer insight into how process parameters are optimized to render desired silicide film properties. Equilibrium simulations have been used to model the CVD reaction with very good trend indicating accuracy. Empirical investigations of CVD TiSisb2 took place in a low-pressure rapid-thermal environment using the SiHsb4 + TiClsb4 gas system on silicon (100) substrates. Secondary ion mass spectroscopy (SIMS) has been used to qualify the benefits of vacuum and

  14. On the limits of detection of a chemical vapor plume in air using the schlieren optical method

    Science.gov (United States)

    Bigger, Rory; Settles, Gary

    2007-11-01

    A modest benchtop z-type schlieren optical system employing twin parabolic mirrors is characterized in terms of its sensitivity limit using the standard-lens method of calibration. A measurement by this method of the free-convection boundary layer on a heated vertical plate in air compares well with known theory. A mixing tube and oxygen sensor are then used to image laminar plumes of both helium and carbon dioxide in air at various mixture ratios, revealing a minimum value of the refractive-index gradient across the plume-air mixing boundary at its origin that is required for visibility. Thus the schlieren detection of a chemical vapor plume must depend upon the concentration of vapor in the air and the vapor refractive index. A range of chemicals is explored in order to determine the detectable concentration limit by this means. The results are discussed in terms of the possible use of schlieren optics to detect explosive vapor plumes in air.

  15. Waste remediation using in situ magnetically assisted chemical separation

    Energy Technology Data Exchange (ETDEWEB)

    Nunez, L.; Buchholz, B.A.; Vandegrift, G.F.

    1993-11-01

    The magnetically assisted chemical separation process (MACS) combines the selective and efficient separation afforded by chemical sorption with the magnetic recovery of ferromagnetic particles. This process is being developed for treating the underground storage tanks at Hanford. These waste streams contain cesium, strontium, and transuranics (TRU) that must be removed before this waste can be disposed of as grout. The separation process uses magnetic particles coated with either (1) a selective ion exchange material or an organic extractant containing solvent (for cesium and strontium removal) or (2) solvents for selective separation of TRU elements (e.g., TRUEX process). These coatings, by their chemical nature, selectively separate the contaminants onto the particles, which can then be recovered from the tank using a magnet. Once the particles are removed, the contaminants can either be left on the loaded particles and added to the glass feed slurry or stripped into a small volume of solution so that the extracting particles can be reused. The status of chemistry and separation process is discussed in this paper.

  16. Zno Micro/Nanostructures Grown on Sapphire Substrates Using Low-Temperature Vapor-Trapped Thermal Chemical Vapor Deposition: Structural and Optical Properties

    Directory of Open Access Journals (Sweden)

    Po-Sheng Hu

    2017-12-01

    Full Text Available In this research, the Zn(C5H7O22·xH2O-based growth of ZnO micro/nanostructures in a low temperature, vapor-trapped chemical vapor deposition system was attempted to optimize structural and optical properties for potential biomedical applications. By trapping in-flow gas molecules and Zinc vapor inside a chamber tube by partially obstructing a chamber outlet, a high pressure condition can be achieved, and this experimental setup has the advantages of ease of synthesis, being a low temperature process, and cost effectiveness. Empirically, the growth process proceeded under a chamber condition of an atmospheric pressure of 730 torr, a controlled volume flow rate of input gas, N2/O2, of 500/500 Standard Cubic Centimeters per Minute (SCCM, and a designated oven temperature of 500 °C. Specifically, the dependence of structural and optical properties of the structures on growth duration and spatially dependent temperature were investigated utilizing scanning electron microscopy, X-ray diffraction (XRD, photoluminescence (PL, and ultraviolet-visible transmission spectroscopy. The experimental results indicate that the grown thin film observed with hexagonal structures and higher structural uniformity enables more prominent structural and optical signatures. XRD spectra present the dominant peaks along crystal planes of (002 and (101 as the main direction of crystallization. In addition, while the structures excited with laser wavelength of 325 nm emit a signature radiation around 380 nm, an ultraviolet lamp with a wavelength of 254 nm revealed distinctive photoluminescence peaks at 363.96 nm and 403.52 nm, elucidating different degrees of structural correlation as functions of growth duration and the spatial gradient of temperature. Transmittance spectra of the structures illustrate typical variation in the wavelength range of 200 nm to 400 nm, and its structural correlation is less significant when compared with PL.

  17. On-line coating of glass with tin oxide by atmospheric pressure chemical vapor deposition.

    Energy Technology Data Exchange (ETDEWEB)

    Allendorf, Mark D.; Sopko, J.F. (PPF Industries, Pittsburgh, PA); Houf, William G.; Chae, Yong Kee; McDaniel, Anthony H.; Li, M. (PPF Industries, Pittsburgh, PA); McCamy, J.W. (PPF Industries, Pittsburgh, PA)

    2006-11-01

    Atmospheric pressure chemical vapor deposition (APCVD) of tin oxide is a very important manufacturing technique used in the production of low-emissivity glass. It is also the primary method used to provide wear-resistant coatings on glass containers. The complexity of these systems, which involve chemical reactions in both the gas phase and on the deposition surface, as well as complex fluid dynamics, makes process optimization and design of new coating reactors a very difficult task. In 2001 the U.S. Dept. of Energy Industrial Technologies Program Glass Industry of the Future Team funded a project to address the need for more accurate data concerning the tin oxide APCVD process. This report presents a case study of on-line APCVD using organometallic precursors, which are the primary reactants used in industrial coating processes. Research staff at Sandia National Laboratories in Livermore, CA, and the PPG Industries Glass Technology Center in Pittsburgh, PA collaborated to produce this work. In this report, we describe a detailed investigation of the factors controlling the growth of tin oxide films. The report begins with a discussion of the basic elements of the deposition chemistry, including gas-phase thermochemistry of tin species and mechanisms of chemical reactions involved in the decomposition of tin precursors. These results provide the basis for experimental investigations in which tin oxide growth rates were measured as a function of all major process variables. The experiments focused on growth from monobutyltintrichloride (MBTC) since this is one of the two primary precursors used industrially. There are almost no reliable growth-rate data available for this precursor. Robust models describing the growth rate as a function of these variables are derived from modeling of these data. Finally, the results are used to conduct computational fluid dynamic simulations of both pilot- and full-scale coating reactors. As a result, general conclusions are

  18. Vanadyl precursors used to modify the properties of vanadium oxide thin films obtained by chemical vapor deposition

    Energy Technology Data Exchange (ETDEWEB)

    Barreca, D.; Franzato, E.; Rizzi, G.A.; Tondello, E.; Vettori, U. [Univ. di Padova (Italy); Depero, L.E.; Sangaletti, L. [Univ. di Brescia (Italy). Dipt. di Chimica e Fisica per i Materiali

    1999-02-01

    Vanadium oxide thin films were prepared by chemical vapor deposition using as precursors a series of vanadyl complexes of general formula VO(L){sub 2}(H), where L is a {beta}-diketonate ligand. The depositions were carried out on {alpha}-Al{sub 2}O{sub 3} substrates in O{sub 2}, N{sub 2}, and N{sub 2} + H{sub 2}O atmospheres. In order to elucidate the role played by different ligands and synthesis conditions on the properties of the obtained films, the chemical composition of the samples was investigated by X-ray photoelectron spectroscopy, while their microstructure and surface morphology were analyzed by X-ray diffraction, Raman and atomic force microscopy. The thermal decomposition of the precursors, with particular attention to their reactivity in the presence of water vapor, was studied by mass spectrometry and Fourier transform infrared spectroscopy.

  19. Chemical Vapor Deposition of Bi-Te-Ni-Fe on Magnesium Oxide Substrate and Its Seebeck Effect

    Directory of Open Access Journals (Sweden)

    Yong X. Gan

    2017-10-01

    Full Text Available In this work, a Bi-Te-Ni-Fe complex coating material was obtained on magnesium oxide substrate by a single step ambient pressure chemical vapor deposition (CVD. Nickel acetate, bismuth acetate, iron (III nitrate, and tellurium (IV chloride dissolved in N,N-dimethylformamide (DMF served as the metal sources for Ni, Bi, Fe, and Te, respectively. Hydrogen was used as the carrier gas. The substrate was kept at 500 °C in a quartz tube reaction chamber. The chemical vapor deposition time was two hours. Scanning electron microscopic observation revealed porous morphology of the deposited material with a needle-like submicron fine structure. These needle-like entities form networks with fairly uniform distribution on the substrate. Thermoelectric property test showed that the coating is p-type with a Seebeck coefficient of 179 µV/K. Time-dependent potential data were obtained to show the sensitivity of the Seebeck effect to temperature changes.

  20. Van der Waals epitaxial growth of MoS2 on SiO2/Si by chemical vapor deposition

    KAUST Repository

    Cheng, Yingchun

    2013-01-01

    Recently, single layer MoS2 with a direct band gap of 1.9 eV has been proposed as a candidate for two dimensional nanoelectronic devices. However, the synthetic approach to obtain high-quality MoS2 atomic thin layers is still problematic. Spectroscopic and microscopic results reveal that both single layers and tetrahedral clusters of MoS2 are deposited directly on the SiO2/Si substrate by chemical vapor deposition. The tetrahedral clusters are mixtures of 2H- and 3R-MoS2. By ex situ optical analysis, both the single layers and tetrahedral clusters can be attributed to van der Waals epitaxial growth. Due to the similar layered structures we expect the same growth mechanism for other transition-metal disulfides by chemical vapor deposition. © 2013 The Royal Society of Chemistry.

  1. Characterization of Plasma Enhanced Chemical Vapor Deposition-Physical Vapor Deposition transparent deposits on textiles to trigger various antimicrobial properties to food industry textiles

    Energy Technology Data Exchange (ETDEWEB)

    Brunon, Celine [Universite de Lyon, Universite Lyon 1, Laboratoire des Sciences Analytiques (LSA), CNRS, UMR 5180, Bat. J. Raulin 5eme etage, F-69622 Villeurbanne Cedex (France); Chadeau, Elise; Oulahal, Nadia [Universite de Lyon, Universite Lyon 1, Laboratoire de Recherche en Genie Industriel Alimentaire (LRGIA, E.A. 3733), Rue Henri de Boissieu, F-01000 Bourg en Bresse (France); Grossiord, Carol [Science et Surface, 64, Chemin des Mouilles, F-69130 Ecully (France); Dubost, Laurent [HEF, ZI SUD, Rue Benoit Fourneyron, F-42166 Andrezieux Boutheon (France); Bessueille, Francois [Universite de Lyon, Universite Lyon 1, Laboratoire des Sciences Analytiques (LSA), CNRS, UMR 5180, Bat. J. Raulin 5eme etage, F-69622 Villeurbanne Cedex (France); Simon, Farida [TDV Industrie, 43 Rue du Bas des Bois, BP 121, F-53012 Laval Cedex (France); Degraeve, Pascal [Universite de Lyon, Universite Lyon 1, Laboratoire de Recherche en Genie Industriel Alimentaire (LRGIA, E.A. 3733), Rue Henri de Boissieu, F-01000 Bourg en Bresse (France); Leonard, Didier, E-mail: didier.leonard@univ-lyon1.fr [Universite de Lyon, Universite Lyon 1, Laboratoire des Sciences Analytiques (LSA), CNRS, UMR 5180, Bat. J. Raulin 5eme etage, F-69622 Villeurbanne Cedex (France)

    2011-07-01

    Textiles for the food industry were treated with an original deposition technique based on a combination of Plasma Enhanced Chemical Vapor Deposition and Physical Vapor Deposition to obtain nanometer size silver clusters incorporated into a SiOCH matrix. The optimization of plasma deposition parameters (gas mixture, pressure, and power) was focused on textile transparency and antimicrobial properties and was based on the study of both surface and depth composition (X-ray Photoelectron Spectroscopy (XPS), Time-of-Flight Secondary Ion Mass Spectrometry (ToF-SIMS), as well as Transmission Electron Microscopy, Atomic Force Microscopy, SIMS depth profiling and XPS depth profiling on treated glass slides). Deposition conditions were identified in order to obtain a variable and controlled quantity of {approx} 10 nm size silver particles at the surface and inside of coatings exhibiting acceptable transparency properties. Microbiological characterization indicated that the surface variable silver content as calculated from XPS and ToF-SIMS data directly influences the level of antimicrobial activity.

  2. A rapid fabrication of C/C composites by a thermal gradient chemical vapor infiltration method with vaporized kerosene as a precursor

    Energy Technology Data Exchange (ETDEWEB)

    Wang Jiping [State Key Laboratory for Mechanical Behavior of Materials, Xi' an Jiaotong University, Xi' an 710049 (China)]. E-mail: buickwang@hotmail.com; Qian Junmin [State Key Laboratory for Mechanical Behavior of Materials, Xi' an Jiaotong University, Xi' an 710049 (China); Qiao Guanjun [State Key Laboratory for Mechanical Behavior of Materials, Xi' an Jiaotong University, Xi' an 710049 (China); Jin Zhihao [State Key Laboratory for Mechanical Behavior of Materials, Xi' an Jiaotong University, Xi' an 710049 (China)

    2007-01-15

    A thermal gradient, atmospheric pressure chemical vapor infiltration method with simultaneous vaporized kerosene as a precursor for rapid fabrication of C/C composites was studied. By this method, carbon felts (bulk density {approx}0.2 g cm{sup -3}) were densified to C/C composites with density of 1.67 and 1.71 g cm{sup -3} when prepared at 1050 and 1150 deg. C for 6 h, respectively. X-ray diffraction result indicates that the composites have a strong ability to graphitize and the higher deposition temperature leads to the increased graphitization degree. Polarized light microscope and scanning electron microscope images reveal that fibers of the composites prepared for 6 h are surrounded by ring-shaped pyrocarbon matrix with a thickness of {approx}20 {mu}m, and that the matrix is delaminated to 4-6 layer-like regions. The deposition process is analyzed by dividing the reactor into four regions associated with specific functions and the reasons for the rapid fabrication are proposed as the short convection and diffusion path for the precursor and the existing of thermal gradient across the preform.

  3. Germanium-on-Silicon Strain Engineered Materials for Improved Device Performance Grown by Chemical Vapor Deposition

    Science.gov (United States)

    Bharathan, Jayesh Moorkoth

    The primary goal of this research is to develop a chemical vapor deposition process for growing epitaxial films of germanium on silicon (001) substrates with two-dimensional (2-D) morphology, and a low density of threading dislocations. Growth was carried out in a reduced-pressure chemical vapor deposition (RPCVD) system by a two-step growth technique. An accurate knowledge of elastic constants of thin films is important in understanding the effect of strain on material properties. Residual thermal strain was used to measure the Poisson ratio of Ge films grown on Si(001) substrates, by the sin2Psi method and highresolution x-ray diffraction. The Poisson ratio of the Ge films was measured to be 0.25, compared to the bulk value of 0.27. The result was found to be independent of film thickness and defect density, which confirmed that the strain is associated with the elastic response of the film. The study showed that the use of Poisson ratio instead of bulk compliance values yields a more accurate description of the state of in-plane strain present in the film. The experimentally measured in-plane strain in Ge films was found to be lower than the theoretical calculations based on the differential thermal expansion coefficients of Si and Ge. The mechanism of thermal misfit strain relaxation in epitaxial Ge films grown on Si(001) substrates was investigated by x-ray diffraction, and transmission electron microscopy. Lattice misfit strain associated with Ge/(001)Si mismatched epitaxy is relieved by a network of Lomer edge misfit dislocations during the first step of the growth technique. However, thermal misfit strain energy during growth is relieved by interdiffusion mechanism at the heterointerface. Two SiGe compositions containing 0.5 and 6.0 atomic percent Si were detected that relieve the thermal mismatch strain associated with the two steps of the growth process. This study discusses the importance of interdiffusion mechanism in relieving small misfit strains

  4. Selective growth of graphene in layer-by-layer via chemical vapor deposition

    Science.gov (United States)

    Park, Jaehyun; An, Hyosub; Choi, Dong-Chul; Hussain, Sajjad; Song, Wooseok; An, Ki-Seok; Lee, Won-Jun; Lee, Naesung; Lee, Wan-Gyu; Jung, Jongwan

    2016-07-01

    Selective and precise control of the layer number of graphene remains a critical issue for the practical applications of graphene. First, it is highly challenging to grow a continuous and uniform few-layer graphene since once the monolayer graphene fully covers a copper (Cu) surface, the growth of the second layer stops, resulting in mostly nonhomogeneous films. Second, from the selective adlayer growth point of view, there is no clear pathway for achieving this. We have developed the selective growth of a graphene adlayer in layer-by-layer via chemical vapor deposition (CVD) which makes it possible to stack graphene on a specific position. The key idea is to deposit a thin Cu layer (~40 nm thick) on pre-grown monolayer graphene and to apply additional growth. The thin Cu atop the graphene/Cu substrate acts as a catalyst to decompose methane (CH4) gas during the additional growth. The adlayer is grown selectively on the pre-grown graphene, and the thin Cu is removed through evaporation during CVD, eventually forming large-area and uniform double layer graphene. With this technology, highly uniform graphene films with precise thicknesses of 1 to 5 layers and graphene check patterns with 1 to 3 layers were successfully demonstrated. This method provides precise LBL growth for a uniform graphene film and a technique for the design of new graphene devices.Selective and precise control of the layer number of graphene remains a critical issue for the practical applications of graphene. First, it is highly challenging to grow a continuous and uniform few-layer graphene since once the monolayer graphene fully covers a copper (Cu) surface, the growth of the second layer stops, resulting in mostly nonhomogeneous films. Second, from the selective adlayer growth point of view, there is no clear pathway for achieving this. We have developed the selective growth of a graphene adlayer in layer-by-layer via chemical vapor deposition (CVD) which makes it possible to stack graphene

  5. In Situ Infrared Spectroscopy of the Gaseous Species Present in a Diamond Chemical Vapor Deposition System

    Science.gov (United States)

    Morell, G.; Weiner, B. R.

    1998-01-01

    We interfaced a Hot-Filament Chemical Vapor Deposition (HFCVD) system to the emission port of an FT-IR spectrometer, in order to study the gas phase species present during the deposition of diamond thin films. The implementation of the infrared (IR) emission technique in situ allowed the study of various carbon-containing species believed to be crucial in diamond film growth. The two IR-active vibrational fundamentals of methane, v(3)(f2) and v(4)(f2), were observed at three different filament temperatures: 1000, 1500 and 2000 C. However, the net signal of v(3) was emission, while that of v(4) was absorption. These results indicate that the v(4) fundamental is excited beyond equilibrium, while the v(3) fundamental remains mostly in the ground state. This is due to the small concentration of methane, the low energy of v(4) compared to v(3) or to the Hz vibrational mode, and symmetry considerations that forbid interaction among the four fundamentals of methane. Thus, the excitation of v(3) is more likely than its decay under HFCVD conditions, producing a non-equilibrium population. At a filament temperature of 2000 C, the v(3) (sigma(+)(3)) fundamental of acetylene and a band at 1328 cm-l also ascribed to acetylene (v5 (pi(U)) + v4) appear in net absorption. This correlates well with the onset of molecular hydrogen breaking by the filament, which occurs at temperatures around 2000 C and above. The hydrogen atoms produced in this heterogeneous reaction give rise to a chain of reactions that lead to acetylene, among other carbonaceous species.

  6. Practical silicon deposition rules derived from silane monitoring during plasma-enhanced chemical vapor deposition

    Energy Technology Data Exchange (ETDEWEB)

    Bartlome, Richard, E-mail: richard.bartlome@alumni.ethz.ch; De Wolf, Stefaan; Demaurex, Bénédicte; Ballif, Christophe [Ecole Polytechnique Fédérale de Lausanne (EPFL), Institute of Microengineering (IMT), Photovoltaics and Thin-Film Electronics Laboratory, Rue de la Maladière 71b, 2000 Neuchâtel (Switzerland); Amanatides, Eleftherios; Mataras, Dimitrios [University of Patras, Department of Chemical Engineering, Plasma Technology Laboratory, P.O. Box 1407, 26504 Patras (Greece)

    2015-05-28

    We clarify the difference between the SiH{sub 4} consumption efficiency η and the SiH{sub 4} depletion fraction D, as measured in the pumping line and the actual reactor of an industrial plasma-enhanced chemical vapor deposition system. In the absence of significant polysilane and powder formation, η is proportional to the film growth rate. Above a certain powder formation threshold, any additional amount of SiH{sub 4} consumed translates into increased powder formation rather than into a faster growing Si film. In order to discuss a zero-dimensional analytical model and a two-dimensional numerical model, we measure η as a function of the radio frequency (RF) power density coupled into the plasma, the total gas flow rate, the input SiH{sub 4} concentration, and the reactor pressure. The adjunction of a small trimethylboron flow rate increases η and reduces the formation of powder, while the adjunction of a small disilane flow rate decreases η and favors the formation of powder. Unlike η, D is a location-dependent quantity. It is related to the SiH{sub 4} concentration in the plasma c{sub p}, and to the phase of the growing Si film, whether the substrate is glass or a c-Si wafer. In order to investigate transient effects due to the RF matching, the precoating of reactor walls, or the introduction of a purifier in the gas line, we measure the gas residence time and acquire time-resolved SiH{sub 4} density measurements throughout the ignition and the termination of a plasma.

  7. Synthesis of chemical vapor deposition graphene on tantalum wire for supercapacitor applications

    Energy Technology Data Exchange (ETDEWEB)

    Li, Mingji, E-mail: limingji@163.com [Tianjin Key Laboratory of Film Electronic and Communicate Devices, School of Electronics Information Engineering, Tianjin University of Technology, Tianjin 300384 (China); Guo, Wenlong [Tianjin Key Laboratory of Film Electronic and Communicate Devices, School of Electronics Information Engineering, Tianjin University of Technology, Tianjin 300384 (China); Li, Hongji, E-mail: hongjili@yeah.net [Tianjin Key Laboratory of Organic Solar Cells and Photochemical Conversion, School of Chemistry and Chemical Engineering, Tianjin University of Technology, Tianjin 300384 (China); Xu, Sheng [School of Precision Instrument and Optoelectronics Engineering, Tianjin University, Tianjin 300072 (China); Qu, Changqing; Yang, Baohe [Tianjin Key Laboratory of Film Electronic and Communicate Devices, School of Electronics Information Engineering, Tianjin University of Technology, Tianjin 300384 (China)

    2014-10-30

    Highlights: • The capacitance of graphene/tantalum (Ta) wire electrodes is firstly reported. • Graphene was grown on the Ta surface by hot-filament chemical vapor deposition. • Graphene/Ta wire structure is favorable for fast ion and electron transfer. • The graphene/Ta wire electrode shows high capacitive properties. - Abstract: This paper studies the synthesis and electrochemical characterization of graphene/tantalum (Ta) wires as high-performance electrode material for supercapacitors. Graphene on Ta wires is prepared by the thermal decomposition of methane under various conditions. The graphene nanosheets on the Ta wire surface have an average thickness of 1.3–3.4 nm and consist typically of a few graphene monolayers, and TaC buffer layers form between the graphene and Ta wire. A capacitor structure is fabricated using graphene/Ta wire with a length of 10 mm and a diameter of 0.6 mm as the anode and Pt wire of the same size as the cathode. The electrochemical behavior of the graphene/Ta wires as supercapacitor electrodes is characterized by cyclic voltammetry, galvanostatic charge/discharge, and electrochemical impedance spectroscopy in 1 M Na{sub 2}SO{sub 4} aqueous electrolyte. The as-prepared graphene/Ta electrode has highest capacitance of 345.5 F g{sup −1} at current density of 0.5 A g{sup −1}. The capacitance remains at about 84% after 1000 cycles at 10 A g{sup −1}. The good electrochemical performance of the graphene/Ta wire electrode is attributed to the unique nanostructural configuration, high electrical conductivity, and large specific surface area of the graphene layer. This suggests that graphene/Ta wire electrode materials have potential applications in high-performance energy storage devices.

  8. Automation of a remote plasma-enhanced chemical vapor deposition system using LabVIEW

    Science.gov (United States)

    Sharma, Rajan; Fretwell, John L.; Vaihinger, Jochen; Banerjee, Sanjay K.

    1997-08-01

    The remote plasma-enhanced chemical vapor deposition (RPCVD) system is an experimental low temperature Si/Si-Ge epitaxy system. This paper describes an integrated hardware/software automation package developed for the RPCVD system. Aspects of the system controlled by the package include pneumatic gas valves, mass flow controllers (MFCs), and a temperature controller. The package was developed on an Apple Quadra 950 platform using LabVIEWTM 3.1 and associated data acquisition and control hardware supplied by National Instruments and other vendors. The software interface allows the user to operate the system through a virtual control panel which displays critical system parameters such as chamber pressure, chamber temperature and gas flow rates, along with the states of the gas valves and the MFCs. The system can also be run in the recipe mode, in which a sequence of steps are read in from an ExcelTM file. A simulation routine scans each recipe for possible errors such as violation of valve interlocks while the recipe is being loaded. All actions, whether in the manual mode or the recipe mode, are recorded in a log file. Finally, since many of the gases used in the RPCVD process are toxic and/or flammable, there is an emphasis on safety in the entire control scheme. A safety monitor routine constantly checks for valve interlocks and pressure-valve interlocks. Upon detecting an illegal state, it automatically takes necessary action to bring the system into a safe state. In addition to these software safety features, there are also hardware interlocks to deal with such situations as power outages.

  9. Chemical vapor deposition on chabazite (CHA) zeolite membranes for effective post-combustion CO2 capture.

    Science.gov (United States)

    Kim, Eunjoo; Lee, Taehee; Kim, Hyungmin; Jung, Won-Jin; Han, Doug-Young; Baik, Hionsuck; Choi, Nakwon; Choi, Jungkyu

    2014-12-16

    Chabazite (CHA) zeolites with a pore size of 0.37 × 0.42 nm(2) are expected to separate CO2 (0.33 nm) from larger N2 (0.364 nm) in postcombustion flue gases by recognizing their minute size differences. Furthermore, the hydrophobic siliceous constituent in CHA membranes can allow for maintaining the CO2/N2 separation performance in the presence of H2O in contrast with the CO2 affinity-based membranes. In an attempt to increase the molecular sieving ability, the pore mouth size of all silica CHA (Si-CHA) particles was reduced via the chemical vapor deposition (CVD) of a silica precursor (tetraethyl orthosilicate). Accordingly, an increase of the CVD treatment duration decreased the penetration rate of CO2 into the CVD-treated Si-CHA particles. Furthermore, the CVD process was applied to siliceous CHA membranes in order to improve their CO2/N2 separation performance. Compared to the intact CHA membranes, the CO2/N2 maximum separation factor (max SF) for CVD-treated CHA membranes was increased by ∼ 2 fold under dry conditions. More desirably, the CO2/N2 max SF was increased by ∼ 3 fold under wet conditions at ∼ 50 °C, a representative temperature of the flue gas stream. In fact, the presence of H2O in the feed disfavored the permeation of N2 more than that of CO2 through CVD-modified CHA membranes and thus, contributed to the increased CO2/N2 separation factor.

  10. Structure and properties of braided sleeve preforms for chemical vapor infiltration

    Energy Technology Data Exchange (ETDEWEB)

    Starr, T.L.; Fiadzo, O.G.; Hablutzel, N. [Georgia Inst. of Tech., Atlanta, GA (United States). School of Materials Science and Technology

    1998-04-01

    In all composites the properties and structure of the reinforcement strongly influence the performance of the material. For some composites, however, the reinforcement also affects the fabrication process itself exerting an additional, second order influence on performance. This is the case for the chemical vapor infiltration (CVI) process for fabrication of ceramic matrix composites. In this process the matrix forms progressively as a solid deposit, first onto the fiber surfaces, then onto the previous layer of deposit, ultimately growing to fill the inter-fiber porosity. The transport of reactants to the surfaces and the evolved morphology of the matrix depend on the initial reinforcement structure. This structure can vary greatly and is controlled by such factors as fiber size and cross-section, the number of filaments and amount of twist per tow or yarn, and the weave or braid architecture. Often the choice of reinforcement is based on mechanical performance analysis or on the cost and availability of the material or on the temperature stability of the fiber. Given this choice, the composite densification process--CVI--must be optimized to attain a successful material. Ceramic fiber in the form of cylindrical braided sleeve is an attractive choice for fabrication of tube-form ceramic matrix composites. Multiple, concentric layers of sleeve can be placed over a tubular mandrel, compressed and fixed with a binder to form a freestanding tube preform. This fiber architecture is different than that created by layup of plain weave cloth--the material used in most previous CVI development. This report presents the results of the investigation of CVI densification of braided sleeve preforms and the evolution of their structure and transport properties during processing.

  11. Transparent conductive zinc-oxide-based films grown at low temperature by mist chemical vapor deposition

    Energy Technology Data Exchange (ETDEWEB)

    Shirahata, Takahiro [New Energy and Environmental Business Division, Toshiba Mitsubishi-Electric Industrial Systems Corporation, Kobe International Business Center (KIBC) 509, 5-5-2 Minatojima-Minami, Chuo-Ku, Kobe 650-0047 (Japan); Kawaharamura, Toshiyuki [Research Institute, Kochi University of Technology, Kami, Kochi 780-8502 (Japan); School of Systems Engineering, Kochi University of Technology, Kami, Kochi 780-8502 (Japan); Fujita, Shizuo, E-mail: fujitasz@kuee.kyoto-u.ac.jp [Photonics and Electronics Science and Engineering Center, Kyoto University, Katsura, Nishikyo-ku, Kyoto 615-8520 (Japan); Orita, Hiroyuki [New Energy and Environmental Business Division, Toshiba Mitsubishi-Electric Industrial Systems Corporation, Kobe International Business Center (KIBC) 509, 5-5-2 Minatojima-Minami, Chuo-Ku, Kobe 650-0047 (Japan)

    2015-12-31

    Atmospheric pressure mist chemical vapor deposition (Mist–CVD) systems have been developed to grow zinc-oxide-based (ZnO-based) transparent conductive oxide (TCO) films. Low-resistive aluminum-doped ZnO (AZO) TCOs, showing resistivity of the order on 10{sup −4} Ωcm, previously were grown using a safe source material zinc acetate [Zn(ac){sub 2}], at a growth temperature as high as 500 °C. To grow superior TCOs at lower temperatures, we proposed the addition of NH{sub 3} to accelerate the reaction of acetylacetonate compounds. As the result, we could grow gallium-doped ZnO (GZO) TCOs with a resistivity of 2.7 × 10{sup −3} Ω cm and transmittance higher than 90% at 300 °C by using zinc acetylacetonate [Zn(acac){sub 2}] as the Zn source. To grow boron-doped ZnO (BZO) TCOs at a lower growth temperature of 200 °C, we used boron doping along with a toluene solution of diethylzinc (DEZ), that maintained high reactivity without being flammable. These BZO TCOs showed a resistivity of 1.5 × 10{sup −3} Ω cm and transmittance higher than 90%, despite the use of a non-vacuum-based open-air technology. - Highlights: • Introduction of Mist–CVD as a non-vacuum-based, safe, and cost-effective growth technology • Process evolution of the growth technology to lower the growth temperature. • Achievement of low resistive ZnO films at 200oC.

  12. Nitride film growth morphology using remote plasma enhanced chemical vapor deposition

    Energy Technology Data Exchange (ETDEWEB)

    Wintrebert-Fouquet, M.; Butcher, K.S.A.; Chen, P.P.T. [Physics Department, Macquarie University, Sydney, NSW 2109 (Australia); Wuhrer, R. [Microstructural Analysis Unit, Faculty of Science, University of Technology, Sydney, Broadway, NSW 2007 (Australia)

    2007-06-15

    Gallium nitride and indium nitride films have been grown by remote plasma enhanced chemical vapor deposition (RPECVD) at temperatures between 570 and 650 C for GaN and between 350 and 570 C for InN on different substrates. For GaN vast improvements in film morphology and quality have resulted from reductions in background impurities when compared to previous reports. Epitaxial material can now be grown at 650 C under optimized growth conditions. Columnar growth still occurs for growth on some substrates, however film coalescence is observed when using appropriate buffer layers and epitaxial growth can also be observed. High resolution SEM images show examples of this. The root-mean-square surface roughness of epitaxial samples, as measured using atomic force microscopy, shows values of as little as 10 Angstroms. While X-ray diffraction shows that these surfaces are not amorphous but have a strong (0001) preferred axis with FWHM limited by instrumental effects to (2{theta}) 0.085 degrees. The improvement in film quality has allowed heavily doped n-type films to be grown with an electron mobility of 160 cm{sup 2}/V.s for a carrier concentration of {proportional_to}1 x 10{sup 19} cm{sup -3} at 650 C. Moss-Burstein shifted absorption data confirms the high doping level. For InN film growth by RPECVD, columnar growth is commonly observed in the temperature region of interest for films grown directly on sapphire, however film coalescence and epitaxial films are also observed for this material. X-ray diffraction indicates very sharp (0002) peaks with FWHM of (2{theta}) 0.07 degrees. High resolution SEM images show examples of film morphology at different growth temperatures. Electron backscattered diffraction images indicate a wurtzite structure even for InN films with strong deviations from the accepted lattice parameters. (copyright 2007 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  13. Chemical Vapor Deposition Growth. Final Report, December 29, 1975 -- August 31, 1977

    Energy Technology Data Exchange (ETDEWEB)

    Ruth, R. P.; Manasevit, H. M.; Campbell, A. G.; Johnson, R. E.; Kenty, J. L.; Moudy, L. A.; Shaw, G. L.; Simpson, W. I.; Yang, J. J.

    1978-10-01

    The objective of this study was to investigate and develop chemical vapor deposition (CVD) techniques for the growth of large areas of Si sheet on inexpensive substrate materials, with resulting sheet properties suitable for fabricating solar cells that would meet the technical goals of the Low Cost Silicon Solar Array (LSSA) Project. The results of 20 months of experimental work are summarized. The program involved six main technical tasks: (1) modification and test of an existing vertical-chamber CVD reactor system; (2) identification and/or development of suitable inexpensive substrate materials; (3) experimental investigation of CVD process parameters using various candidate substrate materials; (4) preparation of Si sheet samples for various special studies, including solar cell fabrication; (5) evaluation of the properties of the Si sheet material produced by the CVD process; and (6) fabrication and evaluation of experimental solar cell structures by OCLI, using impurity diffusion and other standard and near-standard processing techniques, supplemented late in the program by the in situ CVD growth of n exp + /p/p exp + sheet structures subsquently processed into experimental cells. The principal CVD process used was silane (SiH sub 4 ) pyrolysis, although a few experiments were done with the dichlorosilane (SiH sub 2 Cl sub 2 ) process for Si deposition. The evaluation of various possiblesubstrate materials, the CVD parameter investigations, and the experimental solar cell fabrication and characterization are described in considerable detail. Specific conclusions of the work are discussed, and recommendations for continued investigations in certain areas are given.

  14. Synthesis of graphene nanoribbons from amyloid templates by gallium vapor-assisted solid-phase graphitization

    Energy Technology Data Exchange (ETDEWEB)

    Murakami, Katsuhisa, E-mail: k.murakami@bk.tsukuba.ac.jp; Dong, Tianchen; Kajiwara, Yuya; Takahashi, Teppei; Fujita, Jun-ichi [Institute of Applied Physics, Graduate School of Pure and Applied Sciences, University of Tsukuba, 1-1-1 Tennodai, Tsukuba, Ibaraki 305-8573 (Japan); Tsukuba Research Center for Interdisciplinary Materials Science, University of Tsukuba, 1-1-1 Tennodai, Tsukuba, Ibaraki 305-8573 (Japan); Hiyama, Takaki; Takai, Eisuke; Ohashi, Gai; Shiraki, Kentaro [Institute of Applied Physics, Graduate School of Pure and Applied Sciences, University of Tsukuba, 1-1-1 Tennodai, Tsukuba, Ibaraki 305-8573 (Japan)

    2014-06-16

    Single- and double-layer graphene nanoribbons (GNRs) with widths of around 10 nm were synthesized directly onto an insulating substrate by solid-phase graphitization using a gallium vapor catalyst and carbon templates made of amyloid fibrils. Subsequent investigation revealed that the crystallinity, conductivity, and carrier mobility were all improved by increasing the temperature of synthesis. The carrier mobility of the GNR synthesized at 1050 °C was 0.83 cm{sup 2}/V s, which is lower than that of mechanically exfoliated graphene. This is considered to be most likely due to electron scattering by the defects and edges of the GNRs.

  15. Biomass-based composites from poly(lactic acid) and wood flour by vapor-phase assisted surface polymerization.

    Science.gov (United States)

    Kim, Donghee; Andou, Yoshito; Shirai, Yoshihito; Nishida, Haruo

    2011-02-01

    To prepare biomass-based composites in an environmentally benign manner, vapor-phase assisted surface polymerization (VASP) was applied to prepare the composites from wood flour and poly(l-lactic acid) (PLLA) without solvent. VASP of l,l-lactide successfully proceeded on the wood flour surfaces, resulting in surface coverage by newly generated PLLA. For obtained PLLA/wood flour composites, it was clarified that grafting of PLLA on wood flour surfaces had occurred to form covalently bonded composites, with the accumulated PLLA layers having crystallized in situ during VASP. Resulting PLLA layers showed very high crystallinity of 79.2% and a high melting point close to the equilibrium melting point. Moreover, thermal degradation behavior of the composites suggested a cooperative degradation manner of the components.

  16. Effect of Different Catalyst Deposition Technique on Aligned Multiwalled Carbon Nanotubes Grown by Thermal Chemical Vapor Deposition

    Directory of Open Access Journals (Sweden)

    Mohamed Shuaib Mohamed Saheed

    2014-01-01

    Full Text Available The paper reported the investigation of the substrate preparation technique involving deposition of iron catalyst by electron beam evaporation and ferrocene vaporization in order to produce vertically aligned multiwalled carbon nanotubes array needed for fabrication of tailored devices. Prior to the growth at 700°C in ethylene, silicon dioxide coated silicon substrate was prepared by depositing alumina followed by iron using two different methods as described earlier. Characterization analysis revealed that aligned multiwalled carbon nanotubes array of 107.9 µm thickness grown by thermal chemical vapor deposition technique can only be achieved for the sample with iron deposited using ferrocene vaporization. The thick layer of partially oxidized iron film can prevent the deactivation of catalyst and thus is able to sustain the growth. It also increases the rate of permeation of the hydrocarbon gas into the catalyst particles and prevents agglomeration at the growth temperature. Combination of alumina-iron layer provides an efficient growth of high density multiwalled carbon nanotubes array with the steady growth rate of 3.6 µm per minute for the first 12 minutes and dropped by half after 40 minutes. Thicker and uniform iron catalyst film obtained from ferrocene vaporization is attributed to the multidirectional deposition of particles in the gaseous form.

  17. Control of lithium-t-butoxide addition during chemical vapor deposition of Li-doped diamond films by optical emission spectroscopy

    OpenAIRE

    Schreck, Matthias

    1999-01-01

    Control of lithium-t-butoxide addition during chemical vapor deposition of Li-doped diamond films by optical emission spectroscopy / B. Stritzker ... – In: Physica status solidi. A. 174. 1999. S. 65-72

  18. The Tribological Behaviors of Three Films Coated on Biomedical Titanium Alloy by Chemical Vapor Deposition

    Science.gov (United States)

    Wang, Song; Liao, Zhenhua; Liu, Yuhong; Liu, Weiqiang

    2015-11-01

    Three thin films (DLC, a-C, and TiN) were performed on Ti6Al4V by chemical vapor deposition. Carbon ion implantation was pretreated for DLC and a-C films while Ti transition layer was pretreated for TiN film to strengthen the bonding strength. X-ray diffraction, Raman measurement, nano-hardness and nano-scratch tester, and cross-section etching by FIB method were used to analyze film characteristics. Tribological behaviors of these coatings were studied by articulation with both ZrO2 and UHMWPE balls using ball-on-disk sliding. The thickness values reached ~0.46, ~0.33, and ~1.67 μm for DLC, a-C, and TiN film, respectively. Nano-hardness of the coatings compared with that of untreated and bonding strength (critical load in nano-scratch test) values of composite coatings compared with that of monolayer film all increased significantly, respectively. Under destructive test (ZrO2 ball conterface) in bovine serum lubrication, TiN coating revealed the best wear resistance while DLC showed the worst. Film failure was mainly attributed to the plowing by hard ZrO2 ball characterized by abrasive and adhesive wear. Under normal test (UHMWPE ball conterface), all coatings showed significant improvement in wear resistance both in dry sliding and bovine serum lubrication. Both DLC and a-C films showed less surface damage than TiN film due to the self-lubricating phenomenon in dry sliding. TiN film showed the largest friction coefficient both in destructive and normal tests, devoting to the big TiN grains thus leading to much rougher surface and then a higher value. The self-lubricating film formed on DLC and a-C coating could also decrease their friction coefficients. The results indicated that three coatings revealed different wear mechanisms, and thick DLC or a-C film was more promising in application in lower stress conditions such as artificial cervical disk.

  19. The mechanical properties of various chemical vapor deposition diamond structures compared to the ideal single crystal

    Science.gov (United States)

    Hess, Peter

    2012-03-01

    The structural and electronic properties of the diamond lattice, leading to its outstanding mechanical properties, are discussed. These include the highest elastic moduli and fracture strength of any known material. Its extreme hardness is strongly connected with the extreme shear modulus, which even exceeds the large bulk modulus, revealing that diamond is more resistant to shear deformation than to volume changes. These unique features protect the ideal diamond lattice also against mechanical failure and fracture. Besides fast heat conduction, the fast vibrational movement of carbon atoms results in an extreme speed of sound and propagation of crack tips with comparable velocity. The ideal mechanical properties are compared with those of real diamond films, plates, and crystals, such as ultrananocrystalline (UNC), nanocrystalline, microcrystalline, and homo- and heteroepitaxial single-crystal chemical vapor deposition (CVD) diamond, produced by metastable synthesis using CVD. Ultrasonic methods have played and continue to play a dominant role in the determination of the linear elastic properties, such as elastic moduli of crystals or the Young's modulus of thin films with substantially varying impurity levels and morphologies. A surprising result of these extensive measurements is that even UNC diamond may approach the extreme Young's modulus of single-crystal diamond under optimized deposition conditions. The physical reasons for why the stiffness often deviates by no more than a factor of two from the ideal value are discussed, keeping in mind the large variety of diamond materials grown by various deposition conditions. Diamond is also known for its extreme hardness and fracture strength, despite its brittle nature. However, even for the best natural and synthetic diamond crystals, the measured critical fracture stress is one to two orders of magnitude smaller than the ideal value obtained by ab initio calculations for the ideal cubic lattice. Currently

  20. Method of plasma enhanced chemical vapor deposition of diamond using methanol-based solutions

    Science.gov (United States)

    Tzeng, Yonhua (Inventor)

    2009-01-01

    Briefly described, methods of forming diamond are described. A representative method, among others, includes: providing a substrate in a reaction chamber in a non-magnetic-field microwave plasma system; introducing, in the absence of a gas stream, a liquid precursor substantially free of water and containing methanol and at least one carbon and oxygen containing compound having a carbon to oxygen ratio greater than one, into an inlet of the reaction chamber; vaporizing the liquid precursor; and subjecting the vaporized precursor, in the absence of a carrier gas and in the absence in a reactive gas, to a plasma under conditions effective to disassociate the vaporized precursor and promote diamond growth on the substrate in a pressure range from about 70 to 130 Torr.

  1. Radiolysis and hydrolysis of magnetically assisted chemical separation particles

    Energy Technology Data Exchange (ETDEWEB)

    Buchholz, B.A.; Nunez, L.; Vandegrift, G.F.

    1995-05-01

    The magnetically assisted chemical separation (MACS) process is designed to separate transuranic (TRU) elements out of high-level waste (HLW) or TRU waste. Magnetic microparticles (1--25 {mu}m) were coated with octyl (phenyl)N,N-diisobutylcarbamoylmethylphosphine oxide (CMPO) dissolved in tributyl phosphate (TBP) and tested for removing TRU elements from acidic nitrate solutions. The particles were contacted with nitric acid solutions and Hanford plutonium finishing plant (PFP) simulant, irradiated with a high intensity {sup 60}Co {gamma}-ray source, and evaluated for effectiveness in removing TRU elements from 2m HNO{sub 3} solutions. The resistance of the coatings and magnetic cores to radiolytic damage and hydrolytic degradation was investigated by irradiating samples of particles suspended in a variety of solutions with doses of up to 5 Mrad. Transmission electron microscopy (TEM), magnetic susceptibility measurements, and physical observations of the particles and suspension solutions were used to assess physical changes to the particles. Processes that affect the surface of the particles dramatically alter the binding sites for TRU in solution. Hydrolysis played a larger role than radiolysis in the degradation of the extraction capacity of the particles.

  2. One step growth of GaN/SiO2 core/shell nanowire in vapor-liquid-solid route by chemical vapor deposition technique

    Science.gov (United States)

    Barick, B. K.; Yadav, Shivesh; Dhar, S.

    2017-11-01

    GaN/SiO2 core/shell nanowires are grown by cobalt phthalocyanine catalyst assisted vapor-liquid-solid route, in which Si wafer coated with a mixture of gallium and indium is used as the source for Ga and Si and ammonia is used as the precursor for nitrogen and hydrogen. Gallium in the presence of indium and hydrogen, which results from the dissociation of ammonia, forms Si-Ga-In alloy at the growth temperature ∼910 °C. This alloy acts as the source of Si, Ga and In. A detailed study using a variety of characterization tools reveals that these wires, which are several tens of micron long, has a diameter distribution of the core ranging from 20 to 50 nm, while the thickness of the amorphous SiO2 shell layer is about 10 nm. These wires grow along [ 1 0 1 bar 0 ] direction. It has also been observed that the average diameter of these wires decreases, while their density increases as the gallium proportion in the Ga-In mixture is increased.

  3. Semi-continuous high speed gas analysis of generated vapors of chemical warfare agents

    NARCIS (Netherlands)

    Trap, H.C.; Langenberg, J.P.

    1999-01-01

    A method is presented for the continuous analysis of generated vapors of the nerve agents soman and satin and the blistering agent sulfur mustard. By using a gas sampling valve and a very short (15 cm) column connected to an on-column injector with a 'standard length' column, the system can either

  4. Polycrystalline indium phosphide on silicon by indium assisted growth in hydride vapor phase epitaxy

    Energy Technology Data Exchange (ETDEWEB)

    Metaferia, Wondwosen; Sun, Yan-Ting, E-mail: yasun@kth.se; Lourdudoss, Sebastian [Laboratory of Semiconductor Materials, Department of Materials and Nano Physics, KTH—Royal Institute of Technology, Electrum 229, 164 40 Kista (Sweden); Pietralunga, Silvia M. [CNR-Institute for Photonics and Nanotechnologies, P. Leonardo da Vinci, 32 20133 Milano (Italy); Zani, Maurizio; Tagliaferri, Alberto [Department of Physics Politecnico di Milano, P. Leonardo da Vinci, 32 20133 Milano (Italy)

    2014-07-21

    Polycrystalline InP was grown on Si(001) and Si(111) substrates by using indium (In) metal as a starting material in hydride vapor phase epitaxy (HVPE) reactor. In metal was deposited on silicon substrates by thermal evaporation technique. The deposited In resulted in islands of different size and was found to be polycrystalline in nature. Different growth experiments of growing InP were performed, and the growth mechanism was investigated. Atomic force microscopy and scanning electron microscopy for morphological investigation, Scanning Auger microscopy for surface and compositional analyses, powder X-ray diffraction for crystallinity, and micro photoluminescence for optical quality assessment were conducted. It is shown that the growth starts first by phosphidisation of the In islands to InP followed by subsequent selective deposition of InP in HVPE regardless of the Si substrate orientation. Polycrystalline InP of large grain size is achieved and the growth rate as high as 21 μm/h is obtained on both substrates. Sulfur doping of the polycrystalline InP was investigated by growing alternating layers of sulfur doped and unintentionally doped InP for equal interval of time. These layers could be delineated by stain etching showing that enough amount of sulfur can be incorporated. Grains of large lateral dimension up to 3 μm polycrystalline InP on Si with good morphological and optical quality is obtained. The process is generic and it can also be applied for the growth of other polycrystalline III–V semiconductor layers on low cost and flexible substrates for solar cell applications.

  5. Electron traps as major recombination centers in n-GaN films grown by metalorganic chemical vapor deposition

    Science.gov (United States)

    Lee, In-Hwan; Polyakov, Alexander Y.; Smirnov, Nikolai B.; Yakimov, Eugene B.; Tarelkin, Sergey A.; Turutin, Andery V.; Shemerov, Ivan V.; Pearton, Stephen J.

    2016-06-01

    For a group of n-GaN films grown by metalorganic chemical vapor deposition (MOCVD) using both straight MOCVD and epitaxial lateral overgrowth techniques (ELOG proper or pendeo overgrowth), the spectra of deep traps were measured by deep-level transient spectroscopy (DLTS) with electrical or optical injection (ODLTS). The results were compared with diffusion length measurement results obtained from electron-beam-induced current experiments. The results strongly indicate that deep electron traps near E c - 0.56 eV could be the major recombination centers determining the diffusion length values in pendeo samples.

  6. Dzyaloshinskii-Moriya interaction in Pt/Co/Pt films prepared by chemical vapor deposition with various substrate temperatures

    Directory of Open Access Journals (Sweden)

    M. Quinsat

    2017-05-01

    Full Text Available We deposited perpendicularly magnetized Co(∼1nm/Pt(6nm bilayers by thermal chemical vapor deposition (CVD on top of 3nm thick Pt layer using various deposition temperature. Observed Ms increased with the increase of deposition temperature Ts, and reached the value of pure-Co at Ts = 500°C. We measured a (left-handed negative Dzyaloshinskii-Moriya interaction in CVD films indicating a dominant role of the bottom Pt/Co interface.

  7. Characterization of Boron Carbonitride (BCN) Thin Films Deposited by Radiofrequency and Microwave Plasma Enhanced Chemical Vapor Deposition

    OpenAIRE

    M. A. Mannan; Nagano, M.; K. Shigezumi; Kida, T.; Hirao, N.; Baba, Y.

    2008-01-01

    Boron carbonitride (BCN) thin films with a thickness of ~4 µ­m were synthesized on Si (100) substrate by radiofrequency and microwave plasma enhanced chemical vapor deposition using trimethylamine borane [(CH3)3N.BH3)] as a molecular precursor. The microstructures of the films were evaluated using field emission scanning electron microscopy (FE-SEM) and X-ray diffractometry (XRD). Fourier transform infrared spectroscopy (FT-IR) and X-ray photoelectron spectroscopy (XPS) were used to analyze t...

  8. Identification of vapor-phase chemical warfare agent simulants and rocket fuels using laser-induced breakdown spectroscopy

    Energy Technology Data Exchange (ETDEWEB)

    Stearns, Jaime A.; McElman, Sarah E.; Dodd, James A.

    2010-05-01

    Application of laser-induced breakdown spectroscopy (LIBS) to the identification of security threats is a growing area of research. This work presents LIBS spectra of vapor-phase chemical warfare agent simulants and typical rocket fuels. A large dataset of spectra was acquired using a variety of gas mixtures and background pressures and processed using partial least squares analysis. The five compounds studied were identified with a 99% success rate by the best method. The temporal behavior of the emission lines as a function of chamber pressure and gas mixture was also investigated, revealing some interesting trends that merit further study.

  9. In-situ characterization of trapped charges in amorphous semiconductor films during plasma-enhanced chemical vapor deposition

    Directory of Open Access Journals (Sweden)

    S. Nunomura

    2014-09-01

    Full Text Available The subband-gap absorption current in a hydrogenated amorphous silicon film has been measured during plasma-enhanced chemical vapor deposition. The current is probed by a near-infrared laser while photoexcited carriers are generated under visible laser illumination. The trapped charge density is determined from the magnitude of current under the assumption of carrier generation and recombination kinetics. The result indicates that trapped charges are distributed uniformly in the film during growth, and they are reduced after the growth. The trapped charge density is minimized at a growth temperature of ≈ 473 K.

  10. Effects of substrates on Raman spectroscopy in chemical vapor deposition grown graphene transferred with poly (methyl methacrylate)

    Science.gov (United States)

    Gui, Yangyang; Sun, Hengchao; Yan, Hui; Wang, Hao; Zhang, Yongzhe; Song, Xue Mei; Jia, Rui

    2017-09-01

    Graphene on copper foil produced through chemical vapor deposition has been transferred to different substrates and the Raman signatures from graphene on semi-insulating GaAs, n-GaAs, SiO2 (300 nm)/Si, boron-doped Si, phosphorus-doped Si have been studied. It is found that all the material varieties, morphology and lattice of substrates can influence the Raman scattering spectra from graphene. The obtained results are important for nanometrology of graphene and graphene based devices.

  11. Adsorption and desorption of P on (001) InP surface in metalorganic chemical vapor deposition by surface photoabsorption

    CERN Document Server

    Lee, T W; Moon, Y B; Yoon, E J; Kim, Y D

    1999-01-01

    We studied the surface structure of (001) InP in metalorganic chemical vapor deposition (MOCVD) ambient by surface photoabsorption (SPA). A P-dimer peak at 430 nm and an In-dimer peak at 600 nm were observed from the SPA subtraction spectra. A maximum SPA reflectivity change of 8 % between the P-stabilized and the In-stabilized surfaces was obtained at 470 nm. A first-order desorption kinetics was assumed to curve-fit the SPA signal and an activation energy of 3.36 eV was obtained.

  12. Electromechanical studies of YBaCuO tape fabricated by metal-organic chemical vapor deposition for coil applications

    Energy Technology Data Exchange (ETDEWEB)

    Shikimachi, K [Chubu Electric Power Co., Inc., 20-1, Kitasekiyama, Ohdaka-cho, Midori-ku, Nagoya 459-8522 (Japan); Kashima, N [Chubu Electric Power Co., Inc., 20-1, Kitasekiyama, Ohdaka-cho, Midori-ku, Nagoya 459-8522 (Japan); Nagaya, S [Chubu Electric Power Co., Inc., 20-1, Kitasekiyama, Ohdaka-cho, Midori-ku, Nagoya 459-8522 (Japan); Miyata, S [Nagoya Coated Conductor Center ISTEC-SRL, 2-4-1 Mutsuno, Atsuta-ku, Nagoya 456-8567 (Japan); Yamada, Y [Nagoya Coated Conductor Center ISTEC-SRL, 2-4-1 Mutsuno, Atsuta-ku, Nagoya 456-8567 (Japan); Izumi, T [ISTEC-SRL, 1-10-13, Shinonome, Koto-ku, Tokyo 135-0062 (Japan); Nakao, K [ISTEC-SRL, 1-10-13, Shinonome, Koto-ku, Tokyo 135-0062 (Japan); Shiohara, Y [ISTEC-SRL, 1-10-13, Shinonome, Koto-ku, Tokyo 135-0062 (Japan)

    2006-06-01

    YBCO coated conductor has high prospects for coils used in high magnetic fields, but not only its higher transport characteristics but also its adequate workability are required for coil applications. In these studies, mechanical properties of YBCO tape fabricated by multistage chemical vapor deposition were investigated by flat-wise and edgewise bend strain tests. After estimation of influences of its bend strain and its self magnetic field, a small coil of the long YBCO tape could be manufactured. Basic characteristics of the coil were investigated and maximum magnetic field of 0.4 T class was achieved in decompressed liquid nitrogen by the small YBCO coil.

  13. Oxygen source-oriented control of atmospheric pressure chemical vapor deposition of VO2 for capacitive applications

    Directory of Open Access Journals (Sweden)

    Dimitra Vernardou

    2016-06-01

    Full Text Available Vanadium dioxides of different crystalline orientation planes have successfully been fabricated by chemical vapor deposition at atmospheric pressure using propanol, ethanol and O2 gas as oxygen sources. The thick a-axis textured monoclinic vanadium dioxide obtained through propanol presented the best electrochemical response in terms of the highest specific discharge capacity of 459 mAh g-1 with a capacitance retention of 97 % after 1000 scans under constant specific current of 2 A g-1. Finally, the electrochemical impedance spectroscopy indicated that the charge transfer of Li+ through the vanadium dioxide / electrolyte interface was easier for this sample enhancing significantly its capacitance performance.

  14. Flexible Electronics: High Pressure Chemical Vapor Deposition of Hydrogenated Amorphous Silicon Films and Solar Cells (Adv. Mater. 28/2016).

    Science.gov (United States)

    He, Rongrui; Day, Todd D; Sparks, Justin R; Sullivan, Nichole F; Badding, John V

    2016-07-01

    On page 5939, J. V. Badding and co-workers describe the unrolling of a flexible hydrogenated amorphous silicon solar cell, deposited by high-pressure chemical vapor deposition. The high-pressure deposition process is represented by the molecules of silane infiltrating the small voids between the rolled up substrate, facilitating plasma-free deposition over a very large area. The high-pressure approach is expected to also find application for 3D nanoarchitectures. © 2016 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  15. Hot-Wire Chemical Vapor Deposition Of Polycrystalline Silicon : From Gas Molecule To Solar Cell

    Science.gov (United States)

    van Veenendaal, P. A. T. T.

    2002-10-01

    Although the effort to investigate the use of renewable energy sources, such as wind and solar energy, has increased, their contribution to the total energy consumption remains insignificant. The conversion of solar energy into electricity through solar cells is one of the most promising techniques, but the use of these cells is limited by the high cost of electricity. The major contributions to these costs are the material and manufacturing costs. Over the past decades, the development of silicon based thin film solar cells has received much attention, because the fabrication costs are low. A promising material for use in thin film solar cells is polycrystalline silicon (poly-Si:H). A relatively new technique to deposit poly-Si:H is Hot-Wire Chemical Vapor Deposition (Hot-Wire CVD), in which the reactant gases are catalytically decomposed at the surface of a hot filament, mainly tungsten and tantalum. The main advantages of Hot-Wire CVD over PE-CVD are absence of ion bombardment, high deposition rate, low equipment cost and high gas utilization. This thesis deals with the full spectrum of deposition, characterization and application of poly-Si:H thin films, i.e. from gas molecule to solar cell. Studies on the decomposition of silane on the filament showed that the process is catalytic of nature and that silane is decomposed into Si and 4H. The dominant gas phase reaction is the reaction of Si and H with silane, resulting in SiH3, Si2H6, Si3H6 and H2SiSiH2. The film growth precursors are Si, SiH3 and Si2H4. Also, XPS results on used tantalum and tungsten filaments are discussed. The position dependent measurements show larger silicon contents at the ends of the tungsten filament, as compared to the middle, due to a lower filament temperature. This effect is insignificant for a tantalum filament. Deposition time dependent measurements show an increase in silicon content of the tungsten filament with time, while the silicon content on the tantalum filament saturates

  16. The impact of hydrogen and oxidizing impurities in chemical vapor deposition of graphene on copper

    Science.gov (United States)

    Choubak, Saman

    Graphene, the single-atom layer of carbon, has attracted scientists and technologists due to its outstanding physical and opto/electronic properties. The use of graphene in practical applications requires a reliable and cost-effective method to produce large area graphene films with low defects and controlled thicknesses. Direct growth of graphene using chemical vapor deposition (CVD) on copper, in which carbonaceous gaseous species react with the metal substrate in the presence of hydrogen at high temperatures (850-1100° C), led to high coverage of high quality graphene, opening up a promising future for methods of this type and a large step towards commercial realization of graphene products. The present thesis deals with the synthesis of graphene via low pressure CVD (LP-CVD) on copper catalyst using methane as the carbon precursor. The focus is mainly on the determination of the role of hydrogen and oxidizing impurities during graphene formation with an ultimate purpose: to elucidate a viable and reproducible method for the production of high quality graphene films compatible with industrial manufacturing processes. The role of molecular hydrogen in graphene CVD is explored in the first part of the thesis. Few studies claimed that molecular hydrogen etches graphene films on copper by conducting annealing experiments. On the other hand, we speculated that this graphene etching reaction is due to the presence of trace amount of oxygen in the furnace atmosphere. Thus, we took another approach and designed systematic annealing experiments to investigate the role of hydrogen in the etching reaction of graphene on copper foils. No evidence of graphene etching on copper was observed when purified ultra high purity (UHP) hydrogen was used at 825 °C and 500 mTorr. Nevertheless, graphene films exposed to the unpurified UHP hydrogen were etched due to the presence of oxidizing impurities. Our results show that hydrogen is not responsible for graphene etching reaction

  17. Nanostructured Thin Film Synthesis by Aerosol Chemical Vapor Deposition for Energy Storage Applications

    Science.gov (United States)

    Chadha, Tandeep S.

    Renewable energy sources offer a viable solution to the growing energy demand while mitigating concerns for greenhouse gas emissions and climate change. This has led to a tremendous momentum towards solar and wind-based energy harvesting technologies driving efficiencies higher and costs lower. However, the intermittent nature of these energy sources necessitates energy storage technologies, which remain the Achilles heel in meeting the renewable energy goals. This dissertation focusses on two approaches for addressing the needs of energy storage: first, targeting direct solar to fuel conversion via photoelectrochemical water-splitting and second, improving the performance of current rechargeable batteries by developing new electrode architectures and synthesis processes. The aerosol chemical vapor deposition (ACVD) process has emerged as a promising single-step approach for nanostructured thin film synthesis directly on substrates. The relationship between the morphology and the operating parameters in the process is complex. In this work, a simulation based approach has been developed to understand the relationship and acquire the ability of predicting the morphology. These controlled nanostructured morphologies of TiO2 , compounded with gold nanoparticles of various shapes, are used for solar water-splitting applications. Tuning of light absorption in the visible-light range along with reduced electron-hole recombination in the composite structures has been demonstrated. The ACVD process is further extended to a novel single-step synthesis of nanostructured TiO2 electrodes directly on the current collector for applications as anodes in lithium-ion batteries, mainly for electric vehicles and hybrid electric vehicles. The effect of morphology of the nanostructures has been investigated via experimental studies and electrochemical transport modelling. Results demonstrate the exceptional performance of the single crystal one-dimensional nanostructures over granular

  18. Modeling of chemical vapor deposition. II. Gas phase epitaxy of (100) GaAs

    Science.gov (United States)

    Korec, J.; Heyen, M.

    1982-12-01

    The approach described in part I of this paper is applied here to model the CVD of GaAs in a halide transport system. A quantitative description of the effect of growth temperature on the growth rate is obtained. Also the effect of GaCl and arsenic vapor pressure on the growth rate is described. The theoretical estimate of the transition point between etching and growth is close to the experimental value.

  19. Bifunctional catalyst of graphite-encapsulated iron compound nanoparticle for magnetic carbon nanotubes growth by chemical vapor deposition

    Science.gov (United States)

    Saraswati, Teguh Endah; Prasiwi, Oktaviana Dewi Indah; Masykur, Abu; Anwar, Miftahul

    2017-01-01

    The carbon nanotube has widely taken great attractive in carbon nanomaterial research and application. One of its preparation methods is catalytic chemical vapor deposition (CCVD) using catalyst i.e. iron, nickel, etc. Generally, except the catalyst, carbon source gasses as the precursor are still required. Here, we report the use of the bifunctional material of Fe3O4/C which has an incorporated core/shell structures of carbon-encapsulated iron compound nanoparticles. The bifunctional catalyst was prepared by submerged arc discharge that simply performed using carbon and carbon/iron oxide electrodes in ethanol 50%. The prepared material was then used as a catalyst in thermal chemical vapor deposition at 800°C flown with ethanol vapor as the primer carbon source in a low-pressure condition. This catalyst might play a dual role as a catalyst and secondary carbon source for growing carbon nanotubes at the time. The synthesized products were characterized by transmission electron microscopy (TEM) and X-ray diffraction (XRD) analysis. The successful formation of carbon nanotubes was assigned by the shifted X-ray diffracted peak of carbon C(002), the iron oxides of Fe3O4 and γ-Fe2O3, and the other peaks which were highly considered to the other carbon allotropes with sp2 hybridization structures. The other assignment was studied by electron microscopy which successfully observed the presence of single-wall carbon nanotubes. In addition, the as-prepared carbon nanotubes have a magnetic property which was induced by the remaining of metal catalyst inside the CNT.

  20. Resolving the nanostructure of plasma-enhanced chemical vapor deposited nanocrystalline SiOx layers for application in solar cells

    Science.gov (United States)

    Klingsporn, M.; Kirner, S.; Villringer, C.; Abou-Ras, D.; Costina, I.; Lehmann, M.; Stannowski, B.

    2016-06-01

    Nanocrystalline silicon suboxides (nc-SiOx) have attracted attention during the past years for the use in thin-film silicon solar cells. We investigated the relationships between the nanostructure as well as the chemical, electrical, and optical properties of phosphorous, doped, nc-SiO0.8:H fabricated by plasma-enhanced chemical vapor deposition. The nanostructure was varied through the sample series by changing the deposition pressure from 533 to 1067 Pa. The samples were then characterized by X-ray photoelectron spectroscopy, spectroscopic ellipsometry, Raman spectroscopy, aberration-corrected high-resolution transmission electron microscopy, selected-area electron diffraction, and a specialized plasmon imaging method. We found that the material changed with increasing pressure from predominantly amorphous silicon monoxide to silicon dioxide containing nanocrystalline silicon. The nanostructure changed from amorphous silicon filaments to nanocrystalline silicon filaments, which were found to cause anisotropic electron transport.

  1. Remote nitrogen microwave plasma chemical vapor deposition from a tetramethyldisilazane precursor. 2. Properties of deposited silicon carbonitride films

    Energy Technology Data Exchange (ETDEWEB)

    Blaszczyk-Lezak, I. [Centre of Molecular and Macromolecular Studies, Polish Academy of Sciences, Sienkiewicza 112, PL-90-363 Lodz (Poland); Wrobel, A.M. [Centre of Molecular and Macromolecular Studies, Polish Academy of Sciences, Sienkiewicza 112, PL-90-363 Lodz (Poland)]. E-mail: amwrobel@bilbo.cbmm.lodz.pl; Bielinski, D.M. [Institute of Polymers, Faculty of Chemistry, Technical University of Lodz, 90-924 Lodz (Poland)

    2006-02-21

    The physical, optical, and mechanical properties of silicon carbonitride (Si:C:N) films produced by the remote nitrogen plasma chemical vapor deposition (RP-CVD) from tetramethyldisilazane have been investigated in relation to their chemical composition and structure. The films deposited at different substrate temperature (30-400 deg. C) were characterized in terms of their density, refractive index, hardness, elastic modulus, and friction coefficient. The correlations between the film compositional parameters, expressed by the atomic concentration ratios N / Si, C / Si, and N / C, as well as structural parameters described by the relative integrated intensities of the infrared absorption bands from the Si-N, Si-C, and SiMe units (controlled by substrate temperature) were investigated. On the basis of the results of these studies, reasonable structure-property relationships have been determined.

  2. The role of surface chemical analysis in a study to select replacement processes for TCA vapor degreasing

    Science.gov (United States)

    Lesley, Michael W.; Davis, Lawrence E.; Moulder, John F.; Carlson, Brad A.

    1995-01-01

    The role of surface-sensitive chemical analysis (ESCA, AES, and SIMS) in a study to select a process to replace 1, 1, 1-trichloroethane (TCA) vapor degreasing as a steel and aluminum bonding surface preparation method is described. The effort was primarily concerned with spray-in-air cleaning processes involving aqueous alkaline and semi-aqueous cleaners and a contamination sensitive epoxy-to-metal bondline. While all five cleaners tested produced bonding strength results equal to or better than those produced by vapor degreasing, the aqueous alkaline cleaners yielded results which were superior to those produced by the semi-aqueous cleaners. The main reason for the enhanced performance appears to be a silicate layer left behind by the aqueous alkaline cleaners. The silicate layer increases the polarity of the surface and enhances epoxy-to-metal bonding. On the other hand, one of the semi-aqueous cleaners left a nonpolar carbonaceous residue which appeared to have a negative effect on epoxy-to-metal bonding. Differences in cleaning efficiency between cleaners/processes were also identified. These differences in surface chemistry, which were sufficient to affect bonding, were not detected by conventional chemical analysis techniques.

  3. Reduced-Pressure Chemical Vapor Deposition Growth of Isolated Ge Crystals and Suspended Layers on Micrometric Si Pillars.

    Science.gov (United States)

    Skibitzki, Oliver; Capellini, Giovanni; Yamamoto, Yuji; Zaumseil, Peter; Schubert, Markus Andreas; Schroeder, Thomas; Ballabio, Andrea; Bergamaschini, Roberto; Salvalaglio, Marco; Miglio, Leo; Montalenti, Francesco

    2016-10-05

    In this work, we demonstrate the growth of Ge crystals and suspended continuous layers on Si(001) substrates deeply patterned in high aspect-ratio pillars. The material deposition was carried out in a commercial reduced-pressure chemical vapor deposition reactor, thus extending the "vertical-heteroepitaxy" technique developed by using the peculiar low-energy plasma-enhanced chemical vapor deposition reactor, to widely available epitaxial tools. The growth process was thoroughly analyzed, from the formation of small initial seeds to the final coalescence into a continuous suspended layer, by means of scanning and transmission electron microscopy, X-ray diffraction, and μ-Raman spectroscopy. The preoxidation of the Si pillar sidewalls and the addition of hydrochloric gas in the reactants proved to be key to achieve highly selective Ge growth on the pillars top only, which, in turn, is needed to promote the formation of a continuous Ge layer. Thanks to continuum growth models, we were able to single out the different roles played by thermodynamics and kinetics in the deposition dynamics. We believe that our findings will open the way to the low-cost realization of tens of micrometers thick heteroepitaxial layer (e.g., Ge, SiC, and GaAs) on Si having high crystal quality.

  4. Hysteretic Behavior upon Light Soaking in Perovskite Solar Cells Prepared via Modified Vapor-Assisted Solution Process.

    Science.gov (United States)

    Liu, Chong; Fan, Jiandong; Zhang, Xing; Shen, Yanjiao; Yang, Lin; Mai, Yaohua

    2015-05-06

    Recently, the organic-inorganic hybrid perovskite solar cells exhibit rapidly rising efficiencies, while anomalous hysteresis in perovskite solar cells remains unsolvable. Herein, a high-quality perovskite thin film is prepared by a modified vapor-assisted solution process, which is a simple but well-controllable method proven to be capable of producing a thin film with full surface coverage and grain size up to micrometers. The as-fabricated perovskite solar cell has efficiency as high as 10.2%. The hysteresis effects of both planar and mesoscopic TiO2-based perovskite solar cells have been comprehensively studied upon illumination. The results demonstrate that mesoporous-based perovskite cells combined with remarkable grain size are subject to alleviating the hysteresis effects in comparison to the planar cells. Likewise, mesoscopic TiO2-based perovskite cells perform independently of illumination and bias conditions prior to the measurements, whereas the planar cells display a reversible behavior of illumination and applied bias-dependent I-V curves. The present study would refer strip road for the stability study of the perovskite solar cells.

  5. Chelating agent-free, vapor-assisted crystallization method to synthesize hierarchical microporous/mesoporous MIL-125 (Ti).

    Science.gov (United States)

    McNamara, Nicholas D; Hicks, Jason C

    2015-03-11

    Titanium-based microporous heterogeneous catalysts are widely studied but are often limited by the accessibility of reactants to active sites. Metal-organic frameworks (MOFs), such as MIL-125 (Ti), exhibit enhanced surface areas due to their high intrinsic microporosity, but the pore diameters of most microporous MOFs are often too small to allow for the diffusion of larger reactants (>7 Å) relevant to petroleum and biomass upgrading. In this work, hierarchical microporous MIL-125 exhibiting significantly enhanced interparticle mesoporosity was synthesized using a chelating-free, vapor-assisted crystallization method. The resulting hierarchical MOF was examined as an active catalyst for the oxidation of dibenzothiophene (DBT) with tert-butyl hydroperoxide and outperformed the solely microporous analogue. This was attributed to greater access of the substrate to surface active sites, as the pores in the microporous analogues were of inadequate size to accommodate DBT. Moreover, thiophene adsorption studies suggested the mesoporous MOF contained larger amounts of unsaturated metal sites that could enhance the observed catalytic activity.

  6. Calibrated vapor generator source

    Science.gov (United States)

    Davies, J.P.; Larson, R.A.; Goodrich, L.D.; Hall, H.J.; Stoddard, B.D.; Davis, S.G.; Kaser, T.G.; Conrad, F.J.

    1995-09-26

    A portable vapor generator is disclosed that can provide a controlled source of chemical vapors, such as, narcotic or explosive vapors. This source can be used to test and calibrate various types of vapor detection systems by providing a known amount of vapors to the system. The vapor generator is calibrated using a reference ion mobility spectrometer. A method of providing this vapor is described, as follows: explosive or narcotic is deposited on quartz wool, placed in a chamber that can be heated or cooled (depending on the vapor pressure of the material) to control the concentration of vapors in the reservoir. A controlled flow of air is pulsed over the quartz wool releasing a preset quantity of vapors at the outlet. 10 figs.

  7. Synthesis of carbon nanomaterials by catalytic chemical vapor deposition: growth mechanisms on metal powders and foils

    OpenAIRE

    Romero Rodríguez, Pablo

    2017-01-01

    Actualmente, las excelentes propiedades proporcionadas a escala nanométrica por los nanomateriales de carbono, como nanotubos y grafeno, motivan la propuesta teórica de un gran número de aplicaciones. Estos nanomateriales se pueden producir por deposición química en fase vapor (CVD), que consiste en la descomposición térmica de hidrocarburos sobre catalizadores metálicos. La técnica de CVD permite, a través del control de las condiciones de síntesis y la composición y morfología del catalizad...

  8. Ni nanoparticles prepared by simple chemical method for the synthesis of Ni/NiO-multi-layered graphene by chemical vapor deposition

    Science.gov (United States)

    Ali, Mokhtar; Remalli, Nagarjuna; Gedela, Venkataramana; Padya, Balaji; Jain, Pawan Kumar; Al-Fatesh, Ahmed; Rana, Usman Ali; Srikanth, Vadali V. S. S.

    2017-02-01

    A new chemical method was used to obtain a high yield of nickel nanoparticles (Ni-NPs). The effect of solvent (distilled water, ethylene glycol, and ethanol) and surfactant (oleic acid and polyvinyl pyrrolidinone) on the morphology and crystallinity of the synthesized Ni-NPs has been investigated. The experimental results revealed that among the solvents mentioned above, ethanol gives the best results in terms of complete reduction, controlled morphology and size distribution of Ni-NPs. The surfactants played an important role in impeding the agglomeration and surface oxidation of Ni-NPs. The surfactants also affected the morphology of the Ni-NPs. The synthesized Ni-NPs are found to be quite stable in air. The best of the synthesized Ni-NPs were effectively used as catalysts for the synthesis of Ni/NiO-multi-layered graphene using catalytic chemical vapor deposition technique.

  9. Tandem solar cells deposited using hot-wire chemical vapor deposition

    Science.gov (United States)

    van Veen, M. K.

    2003-05-01

    In this thesis, the application of the hot-wire chemical vapor deposition (HWCVD) technique for the deposition of silicon thin films is described. The HWCVD technique is based on the dissociation of silicon-containing gasses at the catalytic surface of a hot filament. Advantages of this technique are the high deposition rate, the low equipment costs, and the scalability. The main goal of this thesis is the optimization of the material properties of both hydrogenated amorphous silicon and microcrystalline silicon, so that these materials can be incorporated as the absorbing layers in tandem solar cells. Firstly, the influence of specific deposition parameters on the material quality of hydrogenated amorphous silicon was investigated. With the use of tantalum filaments, the deposition temperature could be decreased to moderate temperatures, while the (electronic) properties of the amorphous silicon were improved. However, at these low filament temperatures the silicide formation at the filaments was enhanced, resulting in a decrease in the deposition rate and a deterioration of the material quality over time. For extensive silicide formation, even epitaxial growth on crystalline wafers was observed. By preheating the filaments at elevated temperature before deposition, the influence of silicide formation could be minimized, which resulted in an improvement in the reproducibility of the material quality. Solar cells, in which the absorbing layer was made at moderate temperature, had high open-circuit voltages and high fill factors. The best n-i-p structured cell on plain stainless steel had an initial efficiency of 7.2 %. The incorporation of amorphous silicon in p-i-n structured cells with a textured front contact resulted in a higher short-circuit current density and a higher efficiency. Occasionally, many n-i-p structured cells showed shunting problems. The number of working cells was directly correlated to the age of the filaments. The presence of silicides on the

  10. Growth of inclined boron nanowire bundle arrays in an oxide-assisted vapor-liquid-solid process

    Science.gov (United States)

    Yun, S. H.; Wu, J. Z.; Dibos, A.; Gao, X.; Karlsson, U. O.

    2005-09-01

    In the vapor-liquid-solid process typically employed for semiconductor nanowire growth, nucleation and anisotropic crystal growth of single nanowires are achieved with generation of a solid/liquid alloy interface using metal catalysts. The nucleation and growth mechanism of nanowires may be greatly altered when a second liquid is introduced into the solid/liquid alloy interface. In this work, we demonstrate bundled boron nanowire (BNW) array growth on Au coated Si substrates by introducing a second liquid of B2O3 onto the solid (B)/liquid alloy (Au-B) interface. The BNWs in each bundle are straight but highly inclined with respect to the normal of the substrate. A study of BNW morphology and chemical elemental distribution using electron microscopy and energy dispersive x-ray spectroscopy suggested that the catalyst Au provided the nucleation site for BNW bundles while the liquid B2O3 modified the initiation of BNWs from each nucleation site, resulting in multiple initiation of the BNWs from each site.

  11. Organic, inorganic and total mercury determination in fish by chemical vapor generation with collection on a gold gauze and electrothermal atomic absorption spectrometry

    Energy Technology Data Exchange (ETDEWEB)

    Duarte, Fabio Andrei; Bizzi, Cezar Augusto; Goldschmidt Antes, Fabiane; Dressler, Valderi Luiz [Departamento de Quimica, Universidade Federal de Santa Maria, 97105-900 Santa Maria, RS (Brazil); Flores, Erico Marlon de Moraes [Departamento de Quimica, Universidade Federal de Santa Maria, 97105-900 Santa Maria, RS (Brazil)], E-mail: flores@quimica.ufsm.br

    2009-06-15

    A method for organic, inorganic and total mercury determination in fish tissue has been developed using chemical vapor generation and collection of mercury vapor on a gold gauze inside a graphite tube and further atomization by electrothermal atomic absorption spectrometry. After drying and cryogenic grinding, potassium bromide and hydrochloric acid solution (1 mol L{sup - 1} KBr in 6 mol L{sup - 1} HCl) was added to the samples. After centrifugation, total mercury was determined in the supernatant. Organomercury compounds were selectively extracted from KBr solution using chloroform and the resultant solution was back extracted with 1% m/v L-cysteine. This solution was used for organic Hg determination. Inorganic Hg remaining in KBr solution was directly determined by chemical vapor generation electrothermal atomic absorption spectrometry. Mercury vapor generation from extracts was performed using 1 mol L{sup - 1} HCl and 2.5% m/v NaBH{sub 4} solutions and a batch chemical vapor generation system. Mercury vapor was collected on the gold gauze heated resistively at 80 deg. C and the atomization temperature was set at 650 deg. C. The selectivity of extraction was evaluated using liquid chromatography coupled to chemical vapor generation and determination by inductively coupled plasma mass spectrometry. The proposed method was applied for mercury analysis in shark, croaker and tuna fish tissues. Certified reference materials were used to check accuracy and the agreement was better than 95%. The characteristic mass was 60 pg and method limits of detection were 5, 1 and 1 ng g{sup - 1} for organic, inorganic and total mercury, respectively. With the proposed method it was possible to analyze up to 2, 2 and 6 samples per hour for organic, inorganic and total Hg determination, respectively.

  12. Organic, inorganic and total mercury determination in fish by chemical vapor generation with collection on a gold gauze and electrothermal atomic absorption spectrometry

    Science.gov (United States)

    Duarte, Fábio Andrei; Bizzi, Cezar Augusto; Antes, Fabiane Goldschmidt; Dressler, Valderi Luiz; Flores, Érico Marlon de Moraes

    2009-06-01

    A method for organic, inorganic and total mercury determination in fish tissue has been developed using chemical vapor generation and collection of mercury vapor on a gold gauze inside a graphite tube and further atomization by electrothermal atomic absorption spectrometry. After drying and cryogenic grinding, potassium bromide and hydrochloric acid solution (1 mol L - 1 KBr in 6 mol L - 1 HCl) was added to the samples. After centrifugation, total mercury was determined in the supernatant. Organomercury compounds were selectively extracted from KBr solution using chloroform and the resultant solution was back extracted with 1% m/v L-cysteine. This solution was used for organic Hg determination. Inorganic Hg remaining in KBr solution was directly determined by chemical vapor generation electrothermal atomic absorption spectrometry. Mercury vapor generation from extracts was performed using 1 mol L - 1 HCl and 2.5% m/v NaBH 4 solutions and a batch chemical vapor generation system. Mercury vapor was collected on the gold gauze heated resistively at 80 °C and the atomization temperature was set at 650 °C. The selectivity of extraction was evaluated using liquid chromatography coupled to chemical vapor generation and determination by inductively coupled plasma mass spectrometry. The proposed method was applied for mercury analysis in shark, croaker and tuna fish tissues. Certified reference materials were used to check accuracy and the agreement was better than 95%. The characteristic mass was 60 pg and method limits of detection were 5, 1 and 1 ng g - 1 for organic, inorganic and total mercury, respectively. With the proposed method it was possible to analyze up to 2, 2 and 6 samples per hour for organic, inorganic and total Hg determination, respectively.

  13. Synthesis of diamond films by pulsed liquid injection chemical vapor deposition using a mixture of acetone and water as precursor

    Energy Technology Data Exchange (ETDEWEB)

    Apatiga, L.M., E-mail: apatiga@servidor.unam.m [Centro de Fisica Aplicada y Tecnologia Avanzada, Universidad Nacional Autonoma deMexico, A.P. 1-1010, C.P. 76000 Queretaro, Qro (Mexico); Morales, J., E-mail: ippajmc@yahoo.com.m [Centro de Fisica Aplicada y Tecnologia Avanzada, Universidad Nacional Autonoma deMexico, A.P. 1-1010, C.P. 76000 Queretaro, Qro (Mexico); Facultad de Ciencias Fisico Matematicas, Universidad Autonoma de Nuevo Leon, Av. Universidad S/N, C.P. 66450 San Nicolas Nuevo Leon (Mexico)

    2009-04-02

    A chemical vapor deposition reactor based on the flash evaporation of an organic liquid precursor was used to grow diamond films on Si substrates. An effective pulsed liquid injection mechanism consisting of an injector, normally used for fuel injection in internal combustion engines, injects micro-doses of the precursor to the evaporation zone at 280 {sup o}C and is instantly evaporated. The resulting vapor mixture is transported by a carrier gas to the high-temperature reaction chamber where the diamond nucleates and grows on the substrate surface at temperatures ranging from 750 to 850 {sup o}C. The injection frequency, opening time, number of pulses and other injector parameters are controlled by a computer-driven system. The diamond film morphology and structure were characterized by scanning electron microscopy and Raman spectroscopy. The as-deposited diamond films show a ball-shaped morphology with a grain size that varies from 100 to 400 nm, as well as the characteristic diamond Raman band at 1332 cm{sup -1}. The effects of the experimental parameters and operation principle on the diamond films quality are analyzed and discussed in terms of crystallinity, composition, structure, and morphology.

  14. Plasma-enhanced chemical vapor deposition of graphene on copper substrates

    Directory of Open Access Journals (Sweden)

    Nicolas Woehrl

    2014-04-01

    Full Text Available A plasma enhanced vapor deposition process is used to synthesize graphene from a hydrogen/methane gas mixture on copper samples. The graphene samples were transferred onto SiO2 substrates and characterized by Raman spectroscopic mapping and atomic force microscope topographical mapping. Analysis of the Raman bands shows that the deposited graphene is clearly SLG and that the sheets are deposited on large areas of several mm2. The defect density in the graphene sheets is calculated using Raman measurements and the influence of the process pressure on the defect density is measured. Furthermore the origin of these defects is discussed with respect to the process parameters and hence the plasma environment.

  15. High mobility single-crystalline-like GaAs thin films on inexpensive flexible metal substrates by metal-organic chemical vapor deposition

    Energy Technology Data Exchange (ETDEWEB)

    Dutta, P., E-mail: pdutta2@central.uh.edu; Rathi, M.; Gao, Y.; Yao, Y.; Selvamanickam, V. [Department of Mechanical Engineering, University of Houston, Houston, Texas 77204 (United States); Zheng, N.; Ahrenkiel, P. [Department of Nanoscience and Nanoengineering, South Dakota School of Mines and Technology, Rapid City, South Dakota 57701 (United States); Martinez, J. [Materials Evaluation Laboratory, NASA Johnson Space Center, Houston, Texas 77085 (United States)

    2014-09-01

    We demonstrate heteroepitaxial growth of single-crystalline-like n and p-type doped GaAs thin films on inexpensive, flexible, and light-weight metal foils by metal-organic chemical vapor deposition. Single-crystalline-like Ge thin film on biaxially textured templates made by ion beam assisted deposition on metal foil served as the epitaxy enabling substrate for GaAs growth. The GaAs films exhibited strong (004) preferred orientation, sharp in-plane texture, low grain misorientation, strong photoluminescence, and a defect density of ∼10{sup 7 }cm{sup −2}. Furthermore, the GaAs films exhibited hole and electron mobilities as high as 66 and 300 cm{sup 2}/V-s, respectively. High mobility single-crystalline-like GaAs thin films on inexpensive metal substrates can pave the path for roll-to-roll manufacturing of flexible III-V solar cells for the mainstream photovoltaics market.

  16. Synthesis, Characterization and Growth Mechanism of ZnO Nano-flower by Thermal Chemical Vapor Deposition Method at Low Deposition Temperature

    Science.gov (United States)

    Hartini, A. R.; Amizam, S.; Mamat, M. H.; Abdullah, S.; Rusop, M.

    2008-05-01

    Photoluminescence and morphology studies of Zinc Oxide (ZnO) thin films prepared by using Thermal Chemical Vapor Deposition (Thermal-CVD) were investigated. The ZnO compound was synthesized from zinc acetate dehydrate which act as a starting material to form the ZnO thin films. It was deposited on silicon with low deposition temperature ranging from 400-600 °C with Au as a catalyst assisted. Surface morphology of the samples was examined by Scanning Electron Microscope and photoluminescence properties were studied using Photoluminescence Spectrometer. The surface morphologies of the ZnO nano-flower structure was obviously obtained at deposition temperature of 400 °C. The individual nano-rods diameter of nano-flower is about 100-350 nm, but the end of nano-rods are very sharp which is the size is less than 50 nm. Possible growth mechanism of ZnO nano-flower also discussed. Room temperature PL spectra from the ZnO nano-flower revealed a strong UV emission and broad green emission. This result is very useful for sensor, probe tip and light emitter applications.

  17. A chemically stable europium metal-organic framework for bifunctional chemical sensor and recyclable on-off-on vapor response

    Science.gov (United States)

    Wang, Dongbo; Liu, Jingjuan; Liu, Zhiliang

    2017-07-01

    A ratiometric luminescence sensing method is developed and makes the chemically stable Eu metal-organic framework to be the first bifunctional chemical sensor for Cd2+ and F- ions with naked-eye observation in the field of sensing applications utilizing luminescent Ln-MOFs. This is the first example of luminescent colorimetric sensor caused by the direct dual emissions of a single Ln-MOF. A recyclable vapoluminescent sensor for HCl and NH3 by the naked eye has also been realized.

  18. The electrical properties of low pressure chemical vapor deposition Ga doped ZnO thin films depending on chemical bonding configuration

    Energy Technology Data Exchange (ETDEWEB)

    Jung, Hanearl [School of Electrical and Electronic Engineering, Yonsei University, 50 Yonsei-ro, Seodaemun-gu, Seoul 120-749 (Korea, Republic of); Kim, Doyoung [School of Electrical and Electronic Engineering, Ulsan College, 57 Daehak-ro, Nam-gu, Ulsan 680-749 (Korea, Republic of); Kim, Hyungjun, E-mail: hyungjun@yonsei.ac.kr [School of Electrical and Electronic Engineering, Yonsei University, 50 Yonsei-ro, Seodaemun-gu, Seoul 120-749 (Korea, Republic of)

    2014-04-01

    Highlights: • Undoped and Ga doped ZnO thin films were deposited using DEZ and TMGa. • Effects of Ga doping using TMGa in Ga doped ZnO were investigated. • Degraded properties from excessive doping were analyzed using chemical bondings. - Abstract: The electrical and chemical properties of low pressure chemical vapor deposition (LP-CVD) Ga doped ZnO (ZnO:Ga) films were systematically investigated using Hall measurement and X-ray photoemission spectroscopy (XPS). Diethylzinc (DEZ) and O{sub 2} gas were used as precursor and reactant gas, respectively, and trimethyl gallium (TMGa) was used as a Ga doping source. Initially, the electrical properties of undoped LP-CVD ZnO films depending on the partial pressure of DEZ and O{sub 2} ratio were investigated using X-ray diffraction (XRD) by changing partial pressure of DEZ from 40 to 140 mTorr and that of O{sub 2} from 40 to 80 mTorr. The resistivity was reduced by Ga doping from 7.24 × 10{sup −3} Ω cm for undoped ZnO to 2.05 × 10{sup −3} Ω cm for Ga doped ZnO at the TMG pressure of 8 mTorr. The change of electric properties of Ga doped ZnO with varying the amount of Ga dopants was systematically discussed based on the structural crystallinity and chemical bonding configuration, analyzed by XRD and XPS, respectively.

  19. Study on chemical mechanical polishing of silicon wafer with megasonic vibration assisted.

    Science.gov (United States)

    Zhai, Ke; He, Qing; Li, Liang; Ren, Yi

    2017-09-01

    Chemical mechanical polishing (CMP) is the primary method to realize the global planarization of silicon wafer. In order to improve this process, a novel method which combined megasonic vibration to assist chemical mechanical polishing (MA-CMP) is developed in this paper. A matching layer structure of polishing head was calculated and designed. Silicon wafers are polished by megasonic assisted chemical mechanical polishing and traditional chemical mechanical polishing respectively, both coarse polishing and precision polishing experiments were carried out. With the use of megasonic vibration, the surface roughness values Ra reduced from 22.260nm to 17.835nm in coarse polishing, and the material removal rate increased by approximately 15-25% for megasonic assisted chemical mechanical polishing relative to traditional chemical mechanical polishing. Average Surface roughness values Ra reduced from 0.509nm to 0.387nm in precision polishing. The results show that megasonic assisted chemical mechanical polishing is a feasible method to improve polishing efficiency and surface quality. The material removal and finishing mechanisms of megasonic vibration assisted polishing are investigated too. Copyright © 2017 Elsevier B.V. All rights reserved.

  20. Chemical Vapor Sensing Using Dual Channel Hybrid Organic/Inorganic Field-Effect Transistors

    Science.gov (United States)

    Lewis, Shannon; Schoefer, Sebastian; Sharma, Deepak; Dodabalapur, Ananth

    2008-03-01

    We have developed a field-effect chemical sensing device architecture in which two semiconducting channels are employed, one of which is exposed to the analyte and is chemically sensitive. The second channel (usually silicon) is used for signal transduction/amplification. Such sensors work can work in many device modes including one that can be described as a ``chemical memory mode''. For the chemically sensitive channel, several classes of materials can be employed including small molecule organic semiconductors, conjugated polymers, and inorganic oxides such as SnOx. With organic semiconductor channels, it is possible to demonstrate charge trapping of volatile organic molecules with significant dipole moments such as ketones and alcohols. We will describe the physics of operation of such sensors in various modes and also outline how the selectivity/sensitivity can be enhanced by incorporating organic receptors.

  1. Micro-light-emitting diodes with III–nitride tunnel junction contacts grown by metalorganic chemical vapor deposition

    KAUST Repository

    Hwang, David

    2017-12-13

    Micro-light-emitting diodes (µLEDs) with tunnel junction (TJ) contacts were grown entirely by metalorganic chemical vapor deposition. A LED structure was grown, treated with UV ozone and hydrofluoric acid, and reloaded into the reactor for TJ regrowth. The silicon doping level of the n++-GaN TJ was varied to examine its effect on voltage. µLEDs from 2.5 × 10−5 to 0.01 mm2 in area were processed, and the voltage penalty of the TJ for the smallest µLED at 20 A/cm2 was 0.60 V relative to that for a standard LED with indium tin oxide. The peak external quantum efficiency of the TJ LED was 34%.

  2. Effects of polymethylmethacrylate-transfer residues on the growth of organic semiconductor molecules on chemical vapor deposited graphene

    Energy Technology Data Exchange (ETDEWEB)

    Kratzer, Markus, E-mail: markus.kratzer@unileoben.ac.at; Teichert, Christian [Institute of Physics, Montanuniversitaet Leoben, Franz Josef Straße 18, A 8700 Leoben (Austria); Bayer, Bernhard C. [Department of Engineering, University of Cambridge, Cambridge CB3 0FA (United Kingdom); Faculty of Physics, University of Vienna, Boltzmanngasse 5, A 1090 Vienna (Austria); Kidambi, Piran R. [Department of Engineering, University of Cambridge, Cambridge CB3 0FA (United Kingdom); Department of Mechanical Engineering, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139 (United States); Matković, Aleksandar; Gajić, Radoš [Institute of Physics, Department for Solid State Physics and New Materials, University of Belgrade, Pregrevica 118, 11080 Belgrade (Serbia); Cabrero-Vilatela, Andrea; Weatherup, Robert S.; Hofmann, Stephan [Department of Engineering, University of Cambridge, Cambridge CB3 0FA (United Kingdom)

    2015-03-09

    Scalably grown and transferred graphene is a highly promising material for organic electronic applications, but controlled interfacing of graphene thereby remains a key challenge. Here, we study the growth characteristics of the important organic semiconductor molecule para-hexaphenyl (6P) on chemical vapor deposited graphene that has been transferred with polymethylmethacrylate (PMMA) onto oxidized Si wafer supports. A particular focus is on the influence of PMMA residual contamination, which we systematically reduce by H{sub 2} annealing prior to 6P deposition. We find that 6P grows in a flat-lying needle-type morphology, surprisingly independent of the level of PMMA residue and of graphene defects. Wrinkles in the graphene typically act as preferential nucleation centers. Residual PMMA does however limit the length of the resulting 6P needles by restricting molecular diffusion/attachment. We discuss the implications for organic device fabrication, with particular regard to contamination and defect tolerance.

  3. Metallic 1T phase source/drain electrodes for field effect transistors from chemical vapor deposited MoS2

    Directory of Open Access Journals (Sweden)

    Rajesh Kappera

    2014-09-01

    Full Text Available Two dimensional transition metal dichalcogenides (2D TMDs offer promise as opto-electronic materials due to their direct band gap and reasonably good mobility values. However, most metals form high resistance contacts on semiconducting TMDs such as MoS2. The large contact resistance limits the performance of devices. Unlike bulk materials, low contact resistance cannot be stably achieved in 2D materials by doping. Here we build on our previous work in which we demonstrated that it is possible to achieve low contact resistance electrodes by phase transformation. We show that similar to the previously demonstrated mechanically exfoliated samples, it is possible to decrease the contact resistance and enhance the FET performance by locally inducing and patterning the metallic 1T phase of MoS2 on chemically vapor deposited material. The device properties are substantially improved with 1T phase source/drain electrodes.

  4. Ultraviolet to violet lasing from CdxZn1-xO microdisks produced by chemical vapor deposition

    Science.gov (United States)

    Chen, Zuxin; Chen, Xuechen; Chu, Sheng; Peng, Rufang

    2017-10-01

    High quality (HQ) hexagonal CdxZn1-xO microdisks, with bandgap from 3.02 eV to 3.22 eV, are grown by chemical vapor deposition (CVD). Structural and composition analyses indicate that the microdisks have hexagonal shape, single crystalline and tunable Cd concentration. By optical pumping, the microdisk functions as whispering-gallery-mode (WGM) resonator. Lasing from ultravoilet (UV, 385 nm) to violet (410 nm) is demonstrated at room temperature. The HQ factor (1283) is observed, only because of the WGM type resonance. The results demonstrate that the lasing characteristics of WGM cavity from CdxZn1-xO microdisks show promising applications in low threshold violet lasers and light emitting devices.

  5. On the Origin of Light Emission in Silicon Rich Oxide Obtained by Low-Pressure Chemical Vapor Deposition

    Directory of Open Access Journals (Sweden)

    M. Aceves-Mijares

    2012-01-01

    Full Text Available Silicon Rich Oxide (SRO has been considered as a material to overcome the drawbacks of silicon to achieve optical functions. Various techniques can be used to produce it, including Low-Pressure Chemical Vapor Deposition (LPCVD. In this paper, a brief description of the studies carried out and discussions of the results obtained on electro-, cathode-, and photoluminescence properties of SRO prepared by LPCVD and annealed at 1,100°C are presented. The experimental results lead us to accept that SRO emission properties are due to oxidation state nanoagglomerates rather than to nanocrystals. The emission mechanism is similar to Donor-Acceptor decay in semiconductors, and a wide emission spectrum, from 450 to 850 nm, has been observed. The results show that emission is a function of both silicon excess in the film and excitation energy. As a result different color emissions can be obtained by selecting the suitable excitation energy.

  6. Room Temperature Ferromagnetism of (Mn,Fe Codoped ZnO Nanowires Synthesized by Chemical Vapor Deposition

    Directory of Open Access Journals (Sweden)

    Yongqin Chang

    2011-01-01

    Full Text Available (Mn,Fe codoped ZnO nanowires were synthesized on silicon substrates in situ using a chemical vapor deposition method. The structure and property of the products were investigated by X-ray, electron microscopy, Raman, photoluminescence, and superconducting quantum interference device magnetometer. The doped nanowires are of pure wurtzite phase with single crystalline, and the elements distribute homogeneously in the doped nanowires. Photoluminescence spectrum of the doped nanowires is dominated by a deep-level emission with a negligible near-band-edge emission. The magnetic hysteresis curve with a coercive field of 35 Oe is clearly observed at 300 K, resulting from room-temperature ferromagnetic ordering in the (Mn,Fe codoped ZnO nanowires, which has great potential applications for spintronics devices.

  7. Epitaxial growth of wide-band-gap ZnGa2O4 films by mist chemical vapor deposition

    Science.gov (United States)

    Oshima, Takayoshi; Niwa, Mifuyu; Mukai, Akira; Nagami, Tomohito; Suyama, Toshihisa; Ohtomo, Akira

    2014-01-01

    ZnGa2O4 films were grown on (100) MgAl2O4 substrates by mist chemical vapor deposition. A growth window for obtaining single spinel phase was revealed by systematic variations of precursor Zn/Ga ratio and growth temperature, where the cation stoichiometry was maintained through sublimation of excess Zn species before crystalized into ZnO. The epitaxial relationship to the substrate was identified to be cube on cube with no rotation domain. The optical properties of the fully relaxed film were characterized by using cathodoluminescence (CL) and absorption spectroscopies. A large Stokes shift was found between the CL peak energy (3.4 eV) and fundamental absorption edge (4.6 eV), reflecting typical property of Ga-based wide-band-gap oxide semiconductors.

  8. Relation between growth rate and structure of graphene grown in a 4″ showerhead chemical vapor deposition reactor

    Science.gov (United States)

    Bekdüz, B.; Beckmann, Y.; Meier, J.; Rest, J.; Mertin, W.; Bacher, G.

    2017-05-01

    The chemical vapor deposition (CVD) growth of graphene on copper is controlled by a complex interplay of substrate preparation, substrate temperature, pressure and flow of reactive gases. A large variety of recipes have been suggested in literature, often quite specific to the reactor, which is being used. Here, we report on a relation between growth rate and quality of graphene grown in a scalable 4″ CVD reactor. The growth rate is varied by substrate pre-treatment, chamber pressure, and methane to hydrogen (CH4:H2) ratio, respectively. We found that at lower growth rates graphene grains become hexagonal rather than randomly shaped, which leads to a reduced defect density and a sheet resistance down to 268 Ω/sq.

  9. Optical and structural properties of ZnO hexagonal rods prepared by thermal chemical vapor deposition technique

    Directory of Open Access Journals (Sweden)

    A Reyhani

    2014-11-01

    Full Text Available In this research, ZnO nanostructure hexagonal pyramid rods with high optical and structural quality were synthesized by the simple thermal chemical vapor deposition of Zn powder without a metal catalyst. Surface morphologies were characterized by scanning electron microscopy (SEM. XRD analyses demonstrated that ZnO hexagonal pyramid rods had a wurtzite structure with the orientation of (002. Investigation of optical properties of samples by photoluminescence spectrum exhibited a sharp UV emission peak at 380nm. The quality and composition of the ZnO pyramid rods were characterized using the Fourier transform infrared spectrum (FTIR at room temperature. In addition, the growth mechanism of ZnO hexagonal rods is also briefly discussed.

  10. Chemical Vapor Deposited Graphene-Based Derivative As High-Performance Hole Transport Material for Organic Photovoltaics.

    Science.gov (United States)

    Capasso, Andrea; Salamandra, Luigi; Faggio, Giuliana; Dikonimos, Theodoros; Buonocore, Francesco; Morandi, Vittorio; Ortolani, Luca; Lisi, Nicola

    2016-09-14

    The development of efficient charge transport layers is a key requirement for the fabrication of efficient and stable organic solar cells. A graphene-based derivative with planar resistivity exceeding 10(5) Ω/□ and work function of 4.9 eV is here produced by finely tuning the parameters of the chemical vapor deposition process on copper. After the growth, the film is transferred to glass/indium tin oxide and used as hole transport layer in organic solar cells based on a PBDTTT-C-T:[70]PCBM blend. The cells attained a maximum power conversion efficiency of 5%, matching reference cells made with state-of-the-art PSS as the hole transport layer. Our results indicate that functionalized graphene could represent an effective alternative to PSS as hole transport/electron blocking layer in solution-processed organic photovoltaics.

  11. Origin of donor and acceptor species in undoped ZnSe grown by low-pressure metalorganic chemical vapor deposition

    Science.gov (United States)

    Morimoto, Keizo

    1988-11-01

    Effects of the [H2 Se]/[Dimethylzinc] source ratio on the electrical properties in the temperature range of 15-300 K and on the cathodoluminescence properties at 77 K have been investigated for undoped ZnSe films grown in one deposition run on (100)GaAs substrates at 350 °C by metalorganic chemical vapor deposition. The properties correlated with each other and depended on the degrees of deviation from stoichiometry. The dominant donor is identified with selenium vacancy from the dependence of donor concentration on the ratio and on the film thickness. Two kinds of acceptors were introduced according to the deviation from stoichiometry. They are tentatively associated with NSe and NaZn . Extended lattice defects which reduce the electron mobility are favored at the high ratios and they seem a principal factor of the high-resistive property of this material.

  12. Tetrasilane and digermane for the ultra-high vacuum chemical vapor deposition of SiGe alloys

    Energy Technology Data Exchange (ETDEWEB)

    Hart, John, E-mail: hartjt@udel.edu [Department of Electrical Engineering, University of Delaware, 140 Evans Hall, Newark, DE 19716 (United States); Hazbun, Ramsey; Eldridge, David; Hickey, Ryan [Department of Electrical Engineering, University of Delaware, 140 Evans Hall, Newark, DE 19716 (United States); Fernando, Nalin [Department of Physics, University of New Mexico, MSC 3D, P.O. Box 30001, Las Cruces, New Mexico 88003-8001 (United States); Adam, Thomas [College of Nanoscale Science and Engineering, SUNY, New York 12203 (United States); Zollner, Stefan [Department of Physics, University of New Mexico, MSC 3D, P.O. Box 30001, Las Cruces, New Mexico 88003-8001 (United States); Kolodzey, James [Department of Electrical Engineering, University of Delaware, 140 Evans Hall, Newark, DE 19716 (United States)

    2016-04-01

    Tetrasilane and digermane were used to grow epitaxial silicon germanium layers on silicon substrates in a commercial ultra-high vacuum chemical vapor deposition tool. Films with concentrations up to 19% germanium were grown at temperatures from 400 °C to 550 °C. For all alloy compositions, the growth rates were much higher compared to using mono-silane and mono-germane. The quality of the material was assessed using X-ray diffraction, atomic force microscopy, and spectroscopic ellipsometry; all indicating high quality epitaxial films with low surface roughness suitable for commercial applications. Studies of the decomposition kinetics with regard to temperature were performed, revealing an unusual growth rate maximum between the high and low temperature deposition regimes. - Highlights: • Higher order precursors tetrasilane and digermane • Low temperature deposition • Thorough film characterization with temperature • Arrhenius growth rate peak.

  13. Causal knowledge extraction by natural language processing in material science: a case study in chemical vapor deposition

    Directory of Open Access Journals (Sweden)

    Yuya Kajikawa

    2006-11-01

    Full Text Available Scientific publications written in natural language still play a central role as our knowledge source. However, due to the flood of publications, the literature survey process has become a highly time-consuming and tangled process, especially for novices of the discipline. Therefore, tools supporting the literature-survey process may help the individual scientist to explore new useful domains. Natural language processing (NLP is expected as one of the promising techniques to retrieve, abstract, and extract knowledge. In this contribution, NLP is firstly applied to the literature of chemical vapor deposition (CVD, which is a sub-discipline of materials science and is a complex and interdisciplinary field of research involving chemists, physicists, engineers, and materials scientists. Causal knowledge extraction from the literature is demonstrated using NLP.

  14. Micro-light-emitting diodes with III–nitride tunnel junction contacts grown by metalorganic chemical vapor deposition

    Science.gov (United States)

    Hwang, David; Mughal, Asad J.; Wong, Matthew S.; Alhassan, Abdullah I.; Nakamura, Shuji; DenBaars, Steven P.

    2018-01-01

    Micro-light-emitting diodes (µLEDs) with tunnel junction (TJ) contacts were grown entirely by metalorganic chemical vapor deposition. A LED structure was grown, treated with UV ozone and hydrofluoric acid, and reloaded into the reactor for TJ regrowth. The silicon doping level of the n++-GaN TJ was varied to examine its effect on voltage. µLEDs from 2.5 × 10‑5 to 0.01 mm2 in area were processed, and the voltage penalty of the TJ for the smallest µLED at 20 A/cm2 was 0.60 V relative to that for a standard LED with indium tin oxide. The peak external quantum efficiency of the TJ LED was 34%.

  15. Immobilization of carbon nanotubes on functionalized graphene film grown by chemical vapor deposition and characterization of the hybrid material

    Directory of Open Access Journals (Sweden)

    Prashanta Dhoj Adhikari

    2014-01-01

    Full Text Available We report the surface functionalization of graphene films grown by chemical vapor deposition and fabrication of a hybrid material combining multi-walled carbon nanotubes and graphene (CNT–G. Amine-terminated self-assembled monolayers were prepared on graphene by the UV-modification of oxidized groups introduced onto the film surface. Amine-termination led to effective interaction with functionalized CNTs to assemble a CNT–G hybrid through covalent bonding. Characterization clearly showed no defects of the graphene film after the immobilization reaction with CNT. In addition, the hybrid graphene material revealed a distinctive CNT–G structure and p–n type electrical properties. The introduction of functional groups on the graphene film surface and fabrication of CNT–G hybrids with the present technique could provide an efficient, novel route to device fabrication.

  16. Pressure dependence of in situ boron-doped silicon films prepared by low-pressure chemical vapor deposition. II. Resistivity

    Science.gov (United States)

    Haji, L.; Hamedi, L.; Loisel, B.; Gauneau, M.; Joubert, P.; Sarret, M.

    1989-11-01

    The effects of silane pressure and temperature on the in situ boron incorporation and resistivity of low-pressure chemical vapor deposited polycrystalline silicon films were studied in the ranges of 2.5×10-3-1 Torr and 515-700 °C. By lowering the silane pressure, the boron concentration increases (up to 1×1022 cm-3) and the resistivity decreases down to about 2×10-3 Ω cm without annealing. For high deposition pressure (≥0.1 Torr), the resistivity decreases as the temperature is lowered. In this latter case the secondary-ion mass spectrometry profiles reveal a boron accumulation at the layer-substrate interface, which is always observed independently of the substrate nature.

  17. Pressure dependence of in situ boron-doped silicon films prepared by low-pressure chemical vapor deposition. I. Microstructure

    Science.gov (United States)

    Joubert, P.; Sarret, M.; Haji, L.; Hamedi, L.; Loisel, B.

    1989-11-01

    In situ boron-doped silicon films have been deposited by the low-pressure chemical vapor deposition technique in the pressure and temperature ranges of 1-2.5×10-3 Torr and 515-700 °C, respectively. These films have been investigated by means of x-ray diffraction and transmission electron microscopy in order to study the influence of the silane partial pressure and deposition temperature on the microstructure of the doped films. X-ray experiments combined with gradual etching were performed in order to check the in-depth distribution of the crystallite textures. The microstructure of the boron-doped and undoped polysilicon films are compared.

  18. Enhanced mobility of Li-doped ZnO thin film transistors fabricated by mist chemical vapor deposition

    Science.gov (United States)

    Jeon, Hye-ji; Lee, Seul-Gi; Kim, H.; Park, Jin-Seong

    2014-05-01

    Mist chemical vapor deposition (mist-CVD)-processed, lithium (Li)-doped ZnO thin film transistors (TFTs) are investigated. Li doping significantly increases the field-effect mobility in TFTs up to ˜100 times greater than that of undoped ZnO. The addition of Li into mist-CVD-grown ZnO semiconductors leads to improved film quality, which results from the enhanced crystallinity and reduced defect states, including oxygen vacancies. Our results suggest that Li doping of ZnO-based oxide semiconductors could serve as an effective strategy for high-performance, mist-CVD-processed oxide TFTs with low-cost and low-temperature fabrication.

  19. The SiNx films process research by plasma-enhanced chemical vapor deposition in crystalline silicon solar cells

    Science.gov (United States)

    Chen, Bitao; Zhang, Yingke; Ouyang, Qiuping; Chen, Fei; Zhan, Xinghua; Gao, Wei

    2017-07-01

    SiNx thin film has been widely used in crystalline silicon solar cell production because of the good anti-reflection and passivation effect. We can effectively optimize the cells performance by plasma-enhanced chemical vapor deposition (PECVD) method to change deposition conditions such as temperature, gas flow ratio, etc. In this paper, we deposit a new layer of SiNx thin film on the basis of double-layers process. By changing the process parameters, the compactness of thin films is improved effectively. The NH3 passivation technology is augmented in a creative way, which improves the minority carrier lifetime. In sight of this, a significant increase is generated in the photoelectric performance of crystalline silicon solar cell.

  20. Sensitivity of chemical vapor deposition diamonds to DD and DT neutrons at OMEGA and the National Ignition Facility

    Science.gov (United States)

    Kabadi, N. V.; Sio, H.; Glebov, V.; Gatu Johnson, M.; MacPhee, A.; Frenje, J. A.; Li, C. K.; Seguin, F.; Petrasso, R.; Forrest, C.; Knauer, J.; Rinderknecht, H. G.

    2016-11-01

    The particle-time-of-flight (pTOF) detector at the National Ignition Facility (NIF) is used routinely to measure nuclear bang-times in inertial confinement fusion implosions. The active detector medium in pTOF is a chemical vapor deposition diamond. Calibration of the detectors sensitivity to neutrons and protons would allow measurement of nuclear bang times and hot spot areal density (ρR) on a single diagnostic. This study utilizes data collected at both NIF and Omega in an attempt to determine pTOF's absolute sensitivity to neutrons. At Omega pTOF's sensitivity to DT-n is found to be stable to within 8% at different bias voltages. At the NIF pTOF's sensitivity to DD-n varies by up to 59%. This variability must be decreased substantially for pTOF to function as a neutron yield detector at the NIF. Some possible causes of this variability are ruled out.

  1. Role of defects in tuning the electronic properties of monolayer WS{sub 2} grown by chemical vapor deposition

    Energy Technology Data Exchange (ETDEWEB)

    Yang, Jie; Zheliuk, Oleksandr; Lu, Jianming; Ye, Jianting [Zernike Institute for Advanced Materials, University of Groningen, Groningen (Netherlands); Gordiichuk, Pavlo [Zernike Institute for Advanced Materials, University of Groningen, Groningen (Netherlands); Department of Chemistry, Northwestern University, Evanston, IL (United States); Herrmann, Andreas [Zernike Institute for Advanced Materials, University of Groningen, Groningen (Netherlands); Molecular Biophysics, Department of Biology, Humboldt-Universitaet Berlin (Germany)

    2017-10-15

    Two-dimensional transition metal dichalcogenides have already attracted enormous research interest. To understand the dependence of electronic properties on the quality and defect morphology is vital for synthesizing high quality materials and the realization of functional devices. Here, we demonstrate the mapping of the conductive variations by conducting atomic force microscopy (C-AFM) in the monolayer tungsten disulfide (WS{sub 2}) grown by chemical vapor deposition. The electronic properties are strongly affected by the formation of vacancies in monolayer WS{sub 2} during growth, which is also verified by the photoluminescence. This spatial study of defects provides opportunities for optimization of the growth process for enhancing devices performance of TMDs monolayers. (copyright 2017 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

  2. Facile Fabrication of Boron-Doped Titania Nanopowders by Atmospheric Pressure Chemical Vapor Synthesis Route and its Photocatalytic Activity

    Directory of Open Access Journals (Sweden)

    K. Saberyan

    2014-04-01

    Full Text Available The Atmospheric Pressure Chemical Vapor Synthesis (APCVS route is a process that can be used for the synthesis of doped-nanocrystalline powders with very small crystallite sizes having a narrow particle size distribution and high purity. In this study, APCVS technique was used to prepare boron-doped titania nanopowders. The effects of temperature, borate flow rate and water flow rate on the amount of doped boron were studied. The resultant powders were characterized by inductively coupled plasma (ICP, X-ray diffraction (XRD, nitrogen adsorption technique (BET, UV-visible DRS spectroscopy, scanning electron microscopy (SEM, and transmission electron microscopy (TEM. The optimum boron precursor flow rate was 80 sccm. The highest amount of doped boron was attained when water flow rate was 900 sccm. In comparison to the pristine TiO2, the boron-doped TiO2 nanoparticles showed blue-shift in band-gap energy of the samples.

  3. Tantalum coating on porous Ti6Al4V scaffold using chemical vapor deposition and preliminary biological evaluation

    Energy Technology Data Exchange (ETDEWEB)

    Li, Xiang, E-mail: xiangliwj@sjtu.edu.cn [School of Mechanical Engineering, Shanghai Jiao Tong University, State Key Laboratory of Mechanical System and Vibration, Shanghai, 200240 (China); Wang, Lin [Institute of Orthopaedics, Xijing Hospital, The Fourth Military Medical University, Xi' an, 710032 (China); Yu, Xiaoming [The Institute of Metal Research, Chinese Academy of Sciences, Shenyang, 110016 (China); Feng, Yafei [Institute of Orthopaedics, Xijing Hospital, The Fourth Military Medical University, Xi' an, 710032 (China); Wang, Chengtao [School of Mechanical Engineering, Shanghai Jiao Tong University, State Key Laboratory of Mechanical System and Vibration, Shanghai, 200240 (China); Yang, Ke [The Institute of Metal Research, Chinese Academy of Sciences, Shenyang, 110016 (China); Su, Daniel [School of Mechanical Engineering, Shanghai Jiao Tong University, State Key Laboratory of Mechanical System and Vibration, Shanghai, 200240 (China)

    2013-07-01

    Porous tantalum (Ta), produced via chemical vapor deposition (CVD) of commercially pure Ta onto a vitreous carbon, is currently available for use in orthopedic applications. However, the relatively high manufacturing cost and the incapability to produce customized implant using medical image data have limited its application to gain widespread acceptance. In this study, Ta film was deposited on porous Ti6Al4V scaffolds using CVD technique. Digital microscopy and scanning electron microscopy indicated that the Ta coating evenly covered the entire scaffold structure. X-ray diffraction analysis showed that the coating consisted of α and β phases of Ta. Goat mesenchymal stem cells were seeded and cultured on the Ti6Al4V scaffolds with and without coating. The tetrazolium-based colorimetric assay exhibited better cell adhesion and proliferation on Ta-coated scaffolds compared with uncoated scaffolds. The porous scaffolds were subsequently implanted in goats for 12 weeks. Histological analysis revealed similar bone formation around the periphery of the coated and uncoated implants, but bone ingrowth is better within the Ta-coated scaffolds. To demonstrate the ability of producing custom implant for clinical applications via this technology, we designed and fabricated a porous Ti6Al4V scaffold with segmental mandibular shape derived from patient computerized tomography data. - Highlights: • Ta film was coated on porous Ti6Al4V scaffold using chemical vapor deposition. • Tantalum coating allowed for higher levels of cell adhesion and proliferation. • Better new bone formation occurred inside the tantalum-coated scaffolds. • Clinical image data was integrated with EBM to fabricate customized scaffold.

  4. Metal-boride phase formation on tungsten carbide (WC-Co) during microwave plasma chemical vapor deposition

    Energy Technology Data Exchange (ETDEWEB)

    Johnston, Jamin M.; Catledge, Shane A., E-mail: catledge@uab.edu

    2016-02-28

    Graphical abstract: - Highlights: • A detailed phase analysis after PECVD boriding shows WCoB, CoB and/or W{sub 2}CoB{sub 2}. • EDS of PECVD borides shows boron diffusion into the carbide grain structure. • Nanoindentation hardness and modulus of borides is 23–27 GPa and 600–780 GPa. • Scratch testing shows hard coating with cracking at 40N and spallation at 70N. - Abstract: Strengthening of cemented tungsten carbide by boriding is used to improve the wear resistance and lifetime of carbide tools; however, many conventional boriding techniques render the bulk carbide too brittle for extreme conditions, such as hard rock drilling. This research explored the variation in metal-boride phase formation during the microwave plasma enhanced chemical vapor deposition process at surface temperatures from 700 to 1100 °C. We showed several well-adhered metal-boride surface layers consisting of WCoB, CoB and/or W{sub 2}CoB{sub 2} with average hardness from 23 to 27 GPa and average elastic modulus of 600–730 GPa. The metal-boride interlayer was shown to be an effective diffusion barrier against elemental cobalt; migration of elemental cobalt to the surface of the interlayer was significantly reduced. A combination of glancing angle X-ray diffraction, electron dispersive spectroscopy, nanoindentation and scratch testing was used to evaluate the surface composition and material properties. An evaluation of the material properties shows that plasma enhanced chemical vapor deposited borides formed at substrate temperatures of 800 °C, 850 °C, 900 °C and 1000 °C strengthen the material by increasing the hardness and elastic modulus of cemented tungsten carbide. Additionally, these boride surface layers may offer potential for adhesion of ultra-hard carbon coatings.

  5. PENGARUH TEMPERATUR DEPOSISI PADA PENUMBUHAN FILM TIPIS SILIKON KARBIDA DENGAN METODE HOMEMADE HOT-MESH CHEMICAL VAPOR DEPOSITION

    Directory of Open Access Journals (Sweden)

    B Astuti

    2016-03-01

    Full Text Available Film tipis silikon karbida (SiC telah ditumbuhkan di atas substrate graphene/SiO2/Si dengan metode Homemade Hot-mesh chemical vapor deposition (Hot-Mesh CVD. Pengaruh dari temperature deposisi pada struktur dan morfologi film tipis SiC telah dipelajari dengan menggunakan X-Ray diffractometer (XRD, FESEM dan EDX, dan spektroskopi Raman. Karakterisasi XRD menunjukkan bahwa film tipis SiC memiliki struktur polikristal tipe kubik dengan orientasi (111. Kualitas film tipis SiC, dan ukuran butir kristal dari morfologi film yang dihasilkan meningkat dengan peningkatan temperatur deposisi. Dari karakterisasi spektroskopi Raman, dapati terdapat dua puncak pergeseran Raman yang dominan pada daerah sekitar 780 - 800 cm-1 dan  950 – 980 cm-1 yang merupakan mode fonon SiC-TO dan SiC-LO. Puncak pergeseran Raman tersebut bergeser ke bilangan gelombang yang lebih pendek dengan peningkatan temperature deposisi.Silicon carbide (SiC thin film grown on graphene/SiO2/Si substrate using homemade hot mesh chemical vapor deposition (Hot-Mesh SVD method has been done. Effect of  deposition temperature on structure and morphology of the thin film was studied by using X-ray diffractometer (XRD, FESEM and EDX, and Raman spectroscopy. XRD characteristics shows that SiC thin film has cubic polycrystalline structure with (111 orientation. Quality of the SiC thin film, and crystallite grain size from the film morphology was resulted increases with the increase of the deposition temperature. Based on the characterization of Raman spectroscopy, shows that two peak Raman shift in the range of 780 - 800 cm-1 and  950 – 980 cm-1 was attributed to SiC-TO and SiC-LO phonon mode.  The Raman shift peak was shifted toward the lower wavenumber with the increase of deposition temperature.

  6. Finite Element Analysis Modeling of Chemical Vapor Deposition of Silicon Carbide

    Science.gov (United States)

    2014-06-19

    Kinetic Laws of the Chemical Process in the CVD of SiC Ceramics from CH3SiCl3-H2 Precursor. Journal de Physique IV, C3527-C3533. 13...a Hot Wall Reactor. Journal de Physique IV, C5253-C5260. 15. Oh, I., C. Takoudis & G. Neudeck. (1991). Mathematical Modeling of Epitaxial

  7. The electrical properties of low pressure chemical vapor deposition Ga doped ZnO thin films depending on chemical bonding configuration

    Science.gov (United States)

    Jung, Hanearl; Kim, Doyoung; Kim, Hyungjun

    2014-04-01

    The electrical and chemical properties of low pressure chemical vapor deposition (LP-CVD) Ga doped ZnO (ZnO:Ga) films were systematically investigated using Hall measurement and X-ray photoemission spectroscopy (XPS). Diethylzinc (DEZ) and O2 gas were used as precursor and reactant gas, respectively, and trimethyl gallium (TMGa) was used as a Ga doping source. Initially, the electrical properties of undoped LP-CVD ZnO films depending on the partial pressure of DEZ and O2 ratio were investigated using X-ray diffraction (XRD) by changing partial pressure of DEZ from 40 to 140 mTorr and that of O2 from 40 to 80 mTorr. The resistivity was reduced by Ga doping from 7.24 × 10-3 Ω cm for undoped ZnO to 2.05 × 10-3 Ω cm for Ga doped ZnO at the TMG pressure of 8 mTorr. The change of electric properties of Ga doped ZnO with varying the amount of Ga dopants was systematically discussed based on the structural crystallinity and chemical bonding configuration, analyzed by XRD and XPS, respectively.

  8. Chemical composition, water vapor permeability, and mechanical properties of yuba film influenced by soymilk depth and concentration.

    Science.gov (United States)

    Zhang, Siran; Lee, Jaesang; Kim, Yookyung

    2017-09-01

    Yuba is a soy protein-lipid film formed during heating of soymilk. This study described yuba as an edible film by analyzing its chemical composition, water vapor permeability (WVP), and mechanical properties. Three yuba films were prepared by using different concentrations and depths of soymilk: HS (86 g kg-1 and 2.3 cm), LS (70 g kg-1 and 2.3 cm), and LD (70 g kg-1 and 3.0 cm). As yuba was successively skimmed, the protein, lipid, and SH content decreased, but carbohydrate and SS content increased. Though both the initial concentration and the depth of soymilk affect the properties of the films, the depth of soymilk influences WVP and tensile strength (TS) more. The WVP of the HS and LS changed the least (13-17 g mm kPa-1 m-2 day), while that of the LD changed the most (13-35 g mm kPa-1 m-2 day-1 ). There were no differences (P > 0.05) in the TS between the HS and LS. LD had the greatest decrease of TS and the lowest TS among the groups. The earlier the yuba films were collected, the greater the elongation of the films was: 129% (HS), 113% (LS), and 155% (LD). The initial concentration and the depth of soymilk changed the chemical composition and structure of the yuba films. The LS yuba produced more uniform edible films with good mechanical properties. © 2017 Society of Chemical Industry. © 2017 Society of Chemical Industry.

  9. Undoped and in-situ B doped GeSn epitaxial growth on Ge by atmospheric pressure-chemical vapor deposition

    DEFF Research Database (Denmark)

    Vincent, B.; Gencarelli, F.; Bender, H.

    2011-01-01

    In this letter, we propose an atmospheric pressure-chemical vapor deposition technique to grow metastable GeSn epitaxial layers on Ge. We report the growth of defect free fully strained undoped and in-situ B doped GeSn layers on Ge substrates with Sit contents up to 8%. Those metastable layers stay...

  10. Synthesis of meso-crystalline Al2O3 nano-platelet coatings using combustion chemical vapor deposition (C-CVD)

    CSIR Research Space (South Africa)

    Dhonge, BP

    2014-09-01

    Full Text Available Meso-crystalline alumina (Al2O3) coatings having a nano-platelet microstructure were synthesized using an indigenously designed combustion chemical vapor deposition facility. Aluminum acetylacetonate of 0.001 to 0.005 M concentrations dissolved...

  11. Evolution of Fe Species during the Synthesis of Over-Exchanged Fe/ZSM5 Obtained by Chemical Vapor Deposition of FeCl3

    NARCIS (Netherlands)

    Koningsberger, D.C.; Battiston, A.A.; Bitter, J.H.; Groot, F.M.F. de; Overweg, A.R.; Stephan, O.; Bokhoven, J.A. van; Kooyman, P.J.

    2003-01-01

    The evolution of iron in over-exchanged Fe/ZSM5 prepared via chemical vapor deposition of FeCl{3} was studied at each stage of the synthesis. Different characterization techniques (EXAFS, HR-XANES, }5{}7{Fe Mossbauer spectroscopy, }2{}7{Al NMR, EELS, HR-TEM, XRD, N{2} physisorption, and FTIR

  12. Evolution of Fe species during the synthesis of over-exchanged Fe/ZSM5 obtained by chemical vapor deposition of FeCl3

    NARCIS (Netherlands)

    Battiston, AA; Bitter, JH|info:eu-repo/dai/nl/160581435; de Groot, FMF|info:eu-repo/dai/nl/08747610X; Overweg, AR; Stephan, O; van Bokhoven, JA; Kooyman, PJ; van der Spek, C; Vanko, G; Koningsberger, DC

    2003-01-01

    The evolution of iron in over-exchanged Fe/ZSM5 prepared via chemical vapor deposition of FeCl3 was studied at each stage of the synthesis. Different characterization techniques (EXAFS, HR-XANES, Fe-57 Mossbauer spectroscopy, Al-27 NMR, EELS, HR-TEM, XRD, N-2 physisorption, and FTIR spectroscopy)

  13. Reduction of hydrogen-induced optical losses of plasma-enhanced chemical vapor deposition silicon oxynitride by phosphorus doping and heat treatment

    NARCIS (Netherlands)

    Hussein, M.G.; Worhoff, Kerstin; Sengo, G.; Sengo, G.; Driessen, A.

    2007-01-01

    Plasma enhanced chemical vapor deposition phosphoros-doped silicon oxynitride (SiON) layers with a refractive index of 1.505 were deposited from $N_{2}O$, 2% $SiH_{4}/N_{2}$, and 5% $PH_{3}/Ar$ gaseous mixtures. The $PH_{3}/Ar$ flow rate was varied to investigate the effect of the dopant to the

  14. Controlled growth of MoS2 nanopetals on the silicon nanowire array using the chemical vapor deposition method

    Science.gov (United States)

    Chen, Shang-Min; Lin, Yow-Jon

    2018-01-01

    In order to get a physical/chemical insight into the formation of nanoscale semiconductor heterojunctions, MoS2 flakes are deposited on the silicon nanowire (SiNW) array by chemical vapor deposition (CVD). In this study, H2O2 treatment provides a favorable place where the formation of Sisbnd O bonds on the SiNW surfaces that play important roles (i.e., the nucleation centers, catalyst control centers or ;seeds;) can dominate the growth of MoS2 on the SiNWs. Using this configuration, the effect of a change in the S/MoO3 mass ratio (MS/MMoO3) on the surface morphology of MoS2 is studied. It is shown that an increase in the value of MS/MMoO3 leads to the increased nucleation rate, increasing the size of MoS2 nanopetals. This study provides valuable scientific information for directly CVD-grown edge-oriented MoS2/SiNWs heterojunctions for various nanoscale applications, including hydrogen evolution reaction and electronic and optoelectronic devices.

  15. Effects of feed gas composition and catalyst thickness on carbon nanotube and nanofiber synthesis by plasma enhanced chemical vapor deposition.

    Science.gov (United States)

    Garg, R K; Kim, S S; Hash, D B; Gore, J P; Fisher, T S

    2008-06-01

    Many engineering applications require carbon nanotubes with specific characteristics such as wall structure, chirality and alignment. However, precise control of nanotube properties grown to application specifications remains a significant challenge. Plasma-enhanced chemical vapor deposition (PECVD) offers a variety of advantages in the synthesis of carbon nanotubes in that several important synthesis parameters can be controlled independently. This paper reports an experimental study of the effects of reacting gas composition (percentage methane in hydrogen) and catalyst film thickness on carbon nanotube (CNT) growth and a computational study of gas-phase composition for the inlet conditions of experimentally observed carbon nanotube growth using different chemical reaction mechanisms. The simulations seek to explain the observed effects of reacting gas composition and to identify the precursors for CNT formation. The experimental results indicate that gas-phase composition significantly affects the synthesized material, which is shown to be randomly aligned nanotube and nanofiber mats for relatively methane-rich inlet gas mixtures and non-tubular carbon for methane-lean incoming mixtures. The simulation results suggest that inlet methane-hydrogen mixture coverts to an acetylene-methane-hydrogen mixture with minor amounts of ethylene, hydrogen atom, and methyl radical. Acetylene appears to be the indicator species for solid carbon formation. The simulations also show that inlet methane-hydrogen mixture does not produce enough gas-phase precursors needed to form quality CNTs below 5% CH4 concentrations in the inlet stream.

  16. Role of kinetic factors in chemical vapor deposition synthesis of uniform large area graphene using copper catalyst.

    Science.gov (United States)

    Bhaviripudi, Sreekar; Jia, Xiaoting; Dresselhaus, Mildred S; Kong, Jing

    2010-10-13

    In this article, the role of kinetics, in particular, the pressure of the reaction chamber in the chemical vapor deposition (CVD) synthesis of graphene using low carbon solid solubility catalysts (Cu), on both the large area thickness uniformity and the defect density are presented. Although the thermodynamics of the synthesis system remains the same, based on whether the process is performed at atmospheric pressure (AP), low pressure (LP) (0.1-1 Torr) or under ultrahigh vacuum (UHV) conditions, the kinetics of the growth phenomenon are different, leading to a variation in the uniformity of the resulting graphene growth over large areas (wafer scale). The kinetic models for APCVD and LPCVD are discussed, thereby providing insight for understanding the differences between APCVD vs LPCVD/UHVCVD graphene syntheses. Interestingly, graphene syntheses using a Cu catalyst in APCVD processes at higher methane concentrations revealed that the growth is not self-limiting, which is in contrast to previous observations for the LPCVD case. Additionally, nanoribbons and nanostrips with widths ranging from 20 to 100 nm were also observed on the APCVD grown graphene. Interactions between graphene nanofeatures (edges, folds) and the contaminant metal nanoparticles from the Cu etchant were observed, suggesting that these samples could potentially be employed to investigate the chemical reactivity of single molecules, DNA, and nanoparticles with monolayer graphene.

  17. Membranes produced by plasma enhanced chemical vapor deposition technique for low temperature fuel cell applications

    OpenAIRE

    Ennajdaoui, Aboubakr; Roualdes, Stéphanie; Brault, Pascal; Durand, Jean

    2009-01-01

    International audience; A plasma polymerization process using a continuous glow discharge has been implemented for preparing proton conducting membranes from trifluoromethane sulfonic acid and styrene. The chemical and physical structure of plasma membranes has been investigated using FTIR and SEM. The films are homogeneous with a good adhesion on commercial gas diffusion layer (E-Tek®). Their deposition rate can be increased with increasing flow rate and input power. The thermogravimetric an...

  18. Chemical Assistance in Refolding of Bacterial Inclusion Bodies

    Directory of Open Access Journals (Sweden)

    Mona Alibolandi

    2011-01-01

    Full Text Available Escherichia coli is one of the most widely used hosts for the production of recombinant proteins but insoluble expression of heterologous proteins is a major bottleneck in production of recombinant proteins in E. coli. In vitro refolding of inclusion body into proteins with native conformations is a solution for this problem but there is a need for optimization of condition for each protein specifically. Several approaches have been described for in vitro refolding; most of them involve the use of additives for assisting correct folding. Cosolutes play a major role in refolding process and can be classified according to their function as aggregation suppressors and folding enhancers. This paper presents a review of additives that are used in refolding process of insoluble recombinant proteins in small scale and industrial processes.

  19. An electrospray chemical ionization source for real-time measurement of atmospheric organic and inorganic vapors

    Science.gov (United States)

    Zhao, Yue; Chan, Jeremy K.; Lopez-Hilfiker, Felipe D.; McKeown, Megan A.; D'Ambro, Emma L.; Slowik, Jay G.; Riffell, Jeffrey A.; Thornton, Joel A.

    2017-10-01

    We present an electrospray ion source coupled to an orthogonal continuous-flow atmospheric pressure chemical ionization region. The source can generate intense and stable currents of several specific reagent ions using a range of salt solutions prepared in methanol, thereby providing both an alternative to more common radioactive ion sources and allowing for the generation of reagent ions that are not available in current chemical ionization mass spectrometry (CIMS) techniques, such as alkaline cations. We couple the orthogonal electrospray chemical ionization (ESCI) source to a high-resolution time-of-flight mass spectrometer (HR-ToF-MS), and assess instrument performance through calibrations using nitric acid (HNO3), formic acid (HCOOH), and isoprene epoxydiol (trans-β-IEPOX) gas standards, and through measurements of oxidized organic compounds formed from ozonolysis of α-pinene in a continuous-flow reaction chamber. When using iodide as the reagent ion, the HR-ToF-ESCIMS prototype has a sensitivity of 11, 2.4, and 10 cps pptv-1 per million counts per second (cps) of reagent ions and a detection limit (3σ, 5 s averaging) of 4.9, 12.5, and 1.4 pptv to HNO3, HCOOH, and IEPOX, respectively. These values are comparable to those obtained using an iodide-adduct HR-ToF-CIMS with a radioactive ion source and low-pressure ion-molecule reaction region. Applications to the α-pinene ozonolysis system demonstrates that HR-ToF-ESCIMS can generate multiple reagent ions (e.g., I-, NO3-, acetate, Li+, Na+, K+, and NH4+) having different selectivity to provide a comprehensive molecular description of a complex organic system.

  20. An electrospray chemical ionization source for real-time measurement of atmospheric organic and inorganic vapors

    Directory of Open Access Journals (Sweden)

    Y. Zhao

    2017-10-01

    Full Text Available We present an electrospray ion source coupled to an orthogonal continuous-flow atmospheric pressure chemical ionization region. The source can generate intense and stable currents of several specific reagent ions using a range of salt solutions prepared in methanol, thereby providing both an alternative to more common radioactive ion sources and allowing for the generation of reagent ions that are not available in current chemical ionization mass spectrometry (CIMS techniques, such as alkaline cations. We couple the orthogonal electrospray chemical ionization (ESCI source to a high-resolution time-of-flight mass spectrometer (HR-ToF-MS, and assess instrument performance through calibrations using nitric acid (HNO3, formic acid (HCOOH, and isoprene epoxydiol (trans-β-IEPOX gas standards, and through measurements of oxidized organic compounds formed from ozonolysis of α-pinene in a continuous-flow reaction chamber. When using iodide as the reagent ion, the HR-ToF-ESCIMS prototype has a sensitivity of 11, 2.4, and 10 cps pptv−1 per million counts per second (cps of reagent ions and a detection limit (3σ, 5 s averaging of 4.9, 12.5, and 1.4 pptv to HNO3, HCOOH, and IEPOX, respectively. These values are comparable to those obtained using an iodide-adduct HR-ToF-CIMS with a radioactive ion source and low-pressure ion–molecule reaction region. Applications to the α-pinene ozonolysis system demonstrates that HR-ToF-ESCIMS can generate multiple reagent ions (e.g., I−, NO3−, acetate, Li+, Na+, K+, and NH4+ having different selectivity to provide a comprehensive molecular description of a complex organic system.

  1. Low-Temperature Process for Atomic Layer Chemical Vapor Deposition of an Al2O3 Passivation Layer for Organic Photovoltaic Cells.

    Science.gov (United States)

    Kim, Hoonbae; Lee, Jihye; Sohn, Sunyoung; Jung, Donggeun

    2016-05-01

    Flexible organic photovoltaic (OPV) cells have drawn extensive attention due to their light weight, cost efficiency, portability, and so on. However, OPV cells degrade quickly due to organic damage by water vapor or oxygen penetration when the devices are driven in the atmosphere without a passivation layer. In order to prevent damage due to water vapor or oxygen permeation into the devices, passivation layers have been introduced through methods such as sputtering, plasma enhanced chemical vapor deposition, and atomic layer chemical vapor deposition (ALCVD). In this work, the structural and chemical properties of Al2O3 films, deposited via ALCVD at relatively low temperatures of 109 degrees C, 200 degrees C, and 300 degrees C, are analyzed. In our experiment, trimethylaluminum (TMA) and H2O were used as precursors for Al2O3 film deposition via ALCVD. All of the Al2O3 films showed very smooth, featureless surfaces without notable defects. However, we found that the plastic flexible substrate of an OPV device passivated with 300 degrees C deposition temperature was partially bended and melted, indicating that passivation layers for OPV cells on plastic flexible substrates need to be formed at temperatures lower than 300 degrees C. The OPV cells on plastic flexible substrates were passivated by the Al2O3 film deposited at the temperature of 109 degrees C. Thereafter, the photovoltaic properties of passivated OPV cells were investigated as a function of exposure time under the atmosphere.

  2. Low-temperature chemical vapor deposition growth of graphene from toluene on electropolished copper foils.

    Science.gov (United States)

    Zhang, Bin; Lee, Wi Hyoung; Piner, Richard; Kholmanov, Iskandar; Wu, Yaping; Li, Huifeng; Ji, Hengxing; Ruoff, Rodney S

    2012-03-27

    A two-step CVD route with toluene as the carbon precursor was used to grow continuous large-area monolayer graphene films on a very flat, electropolished Cu foil surface at 600 °C, lower than any temperature reported to date for growing continuous monolayer graphene. Graphene coverage is higher on the surface of electropolished Cu foil than that on the unelectropolished one under the same growth conditions. The measured hole and electron mobilities of the monolayer graphene grown at 600 °C were 811 and 190 cm(2)/(V·s), respectively, and the shift of the Dirac point was 18 V. The asymmetry in carrier mobilities can be attributed to extrinsic doping during the growth or transfer. The optical transmittance of graphene at 550 nm was 97.33%, confirming it was a monolayer, and the sheet resistance was ~8.02 × 10(3) Ω/□. © 2012 American Chemical Society

  3. Data for First Responder Use of Photoionization Detectors for Vapor Chemical Constituents

    Energy Technology Data Exchange (ETDEWEB)

    Keith A. Daum; Matthew G. Watrous; M. Dean Neptune; Daniel I. Michael; Kevin J. Hull; Joseph D. Evans

    2006-11-01

    First responders need appropriate measurement technologies for evaluating incident scenes. This report provides information about photoionization detectors (PIDs), obtained from manufacturers and independent laboratory tests, and the use of PIDs by first responders, obtained from incident commanders in the United States and Canada. PIDs are valued for their relatively low cost, light weight, rapid detection response, and ease of use. However, it is clear that further efforts are needed to provide suitable instruments and decision tools to incident commanders and first responders for assessing potential hazardous chemical releases. Information provided in this report indicates that PIDs should always be part of a decision-making context in which other qualitative and more definitive tests and instruments are used to confirm a finding. Possible amelioratory actions ranging from quick and relatively easy fixes to those requiring significant additional effort are outlined in the report.

  4. Gas chromatography-mass spectrometric identification of iodine species arising from photo-chemical vapor generation

    Energy Technology Data Exchange (ETDEWEB)

    Grinberg, Patricia; Mester, Zoltan [Institute for National Measurements Standards, National Research Council Canada, Ottawa, Ontario, K1A 0R6 (Canada); D' Ulivo, Alessandro [Institute for Chemical and Physical Processes, National Research Council, Via G. Moruzzi 1, Pisa, 56124 (Italy); Sturgeon, Ralph E. [Institute for National Measurements Standards, National Research Council Canada, Ottawa, Ontario, K1A 0R6 (Canada)], E-mail: ralph.sturgeon@nrc.ca

    2009-07-15

    Ultraviolet irradiation of aqueous solutions of iodide/iodate ion containing low molecular weight organic acids generates volatile iodine species that are amenable to detection by atomic spectrometry. In the presence of formic, acetic or propionic acids, photo-chemical generation results in the formation of HI, methyl- and ethyl-iodide respectively, the latter two products being directly identified by gas chromatography-mass spectrometry. Deuterium and {sup 13}C-labeled reagents were employed to elucidate the provenance of the alkyl group. Use of {sup 13}CH{sub 3}-COOH produced {sup 13}CH{sub 3}-I; deuterated acetic acid (D{sub 3}C-COOD) resulted in the formation of CD{sub 3}-I. These observations indicate direct transfer of the alkyl group from the carboxylic acid to iodide, consistent with the suggestion that the mechanism of synthesis involves radical induced reactions.

  5. Gas chromatography-mass spectrometric identification of iodine species arising from photo-chemical vapor generation

    Science.gov (United States)

    Grinberg, Patricia; Mester, Zoltan; D'Ulivo, Alessandro; Sturgeon, Ralph E.

    2009-07-01

    Ultraviolet irradiation of aqueous solutions of iodide/iodate ion containing low molecular weight organic acids generates volatile iodine species that are amenable to detection by atomic spectrometry. In the presence of formic, acetic or propionic acids, photo-chemical generation results in the formation of HI, methyl- and ethyl-iodide respectively, the latter two products being directly identified by gas chromatography-mass spectrometry. Deuterium and 13C-labeled reagents were employed to elucidate the provenance of the alkyl group. Use of 13CH 3-COOH produced 13CH 3-I; deuterated acetic acid (D 3C-COOD) resulted in the formation of CD 3-I. These observations indicate direct transfer of the alkyl group from the carboxylic acid to iodide, consistent with the suggestion that the mechanism of synthesis involves radical induced reactions.

  6. Plasmon-assisted chemical reactions revealed by high-vacuum tip-enhanced Raman spectroscopy

    Science.gov (United States)

    Lu, Shuaicheng; Sheng, Shaoxiang; Zhang, Zhenglong; Xu, Hongxing; Zheng, Hairong

    2014-08-01

    Tip-enhanced Raman spectroscopy (TERS) is the technique that combines the nanoscale spatial resolution of a scanning probe microscope and the highly sensitive Raman spectroscopy enhanced by the surface plasmons. It is suitable for chemical analysis at nanometer scale. Recently, TERS exhibited powerful potential in analyzing the chemical reactions at nanoscale. The high sensitivity and spatial resolution of TERS enable us to learn the reaction processes more clearly. More importantly, the chemical reaction in TERS is assisted by surface plasmons, which provides us an optical method to manipulate the chemical reactions at nanoscale. Here using our home-built high-vacuum tip-enhanced Raman spectroscopy (HV-TERS) setup, we successfully observed the plasmon-assisted molecule dimerization and dissociation reactions. In HV-TERS system, under laser illumination, 4-nitrobenzenethiol (4NBT) molecules can be dimerized to p,p'-dimercaptoazobenzene (DMAB), and dissociation reaction occurs for malachite green (MG) molecules. Using our HV-TERS setup, the dynamic processes of the reactions are clearly revealed. The chemical reactions can be manipulated by controlling the plasmon intensity through changing the power of the incident laser, the tunneling current and the bias voltage. We also investigated the role of plasmonic thermal effect in the reactions by measuring both the Stokes and anti- Stokes Raman peaks. Our findings extend the applications of TERS, which can help to study the chemical reactions and understand the dynamic processes at single molecular level, and even design molecules by the plasmon-assisted chemical reactions.

  7. Direct fabrication of 3D graphene on nanoporous anodic alumina by plasma-enhanced chemical vapor deposition

    Science.gov (United States)

    Zhan, Hualin; Garrett, David J.; Apollo, Nicholas V.; Ganesan, Kumaravelu; Lau, Desmond; Prawer, Steven; Cervenka, Jiri

    2016-01-01

    High surface area electrode materials are of interest for a wide range of potential applications such as super-capacitors and electrochemical cells. This paper describes a fabrication method of three-dimensional (3D) graphene conformally coated on nanoporous insulating substrate with uniform nanopore size. 3D graphene films were formed by controlled graphitization of diamond-like amorphous carbon precursor films, deposited by plasma-enhanced chemical vapour deposition (PECVD). Plasma-assisted graphitization was found to produce better quality graphene than a simple thermal graphitization process. The resulting 3D graphene/amorphous carbon/alumina structure has a very high surface area, good electrical conductivity and exhibits excellent chemically stability, providing a good material platform for electrochemical applications. Consequently very large electrochemical capacitance values, as high as 2.1 mF for a sample of 10 mm3, were achieved. The electrochemical capacitance of the material exhibits a dependence on bias voltage, a phenomenon observed by other groups when studying graphene quantum capacitance. The plasma-assisted graphitization, which dominates the graphitization process, is analyzed and discussed in detail.

  8. Integration of polytetrafluoroethylene low-k dielectric material in a chemical vapor deposited aluminum metallization scheme

    Science.gov (United States)

    Wickland, Heidi Lee

    In order to increase speed and functionality, computer chip technology continues its evolution towards higher device density and reduced feature size. As interconnect signal delay has become prohibitively high for traditional Al/SiO2 architectures, there is a pressing need to pursue integration of low-k materials into back-end-of-the-line interconnect architectures. To this end, polytetrafluoroethylene (PTFE) was integrated with aluminum, implementing titanium nitride as a barrier layer. SPEEDFILM, a version of PTFE, has a low dielectric constant of 1.9--2.0. With the use of an adhesion promoter, SPEEDFILM can be easily spun-cast onto patterned aluminum substrates, allowing for implementation into existing interconnect process flows. CVD aluminum/PVD TiN binary stacks have been successfully grown on spin-cast films of PTFE. Elemental analysis revealed compositionally pure aluminum, showing virtually no fluorine contamination in as-deposited and annealed binary stacks, and resistivity as low as 3.2 muO-cm have been obtained. Thermal annealing studies indicate titanium nitride is an effective barrier against thermally-driven fluorine diffusion from PTFE. A fabrication flow for a two-level Al/PTFE test structure was identified in order to examine key integration issues and produce an electrically testable demonstration vehicle. Many integration milestones have been met. In particular, XPS studies of plasma-treated PTFE surfaces demonstrated that an NH3 plasma can defluorinate the PTFE surface, allowing sufficient adhesion of a subsequently-deposited SiO2 cap to survive chemical-mechanical polishing. First pass work also indicated promising etching and photoresist stripping results of SiO2/PTFE stacks, which are designed for use at the via level of this two-level structure. This is a particularly useful result since low-k dielectrics are often difficult to pattern due to their degradation upon exposure to traditional photoresist stripping chemistries. Finally, in

  9. Quantum chemical modeling of humic acid/air equilibrium partitioning of organic vapors.

    Science.gov (United States)

    Niederer, Christian; Goss, Kai-Uwe

    2007-05-15

    Classical approaches for predicting soil organic matter partition coefficients of organic compounds require a calibration with experimental partition data and, for good accuracy, experimental compound descriptors. In this study we evaluate the quantum chemical model COSMO-RS in its COSMOtherm implementation for the prediction of about 200 experimental Leonardite humic acid/air partition coefficients without calibration or experimental compound descriptors, but simply based on molecular structures. For this purpose a Leonardite Humic Acid model monomer limited to 31 carbon atoms was derived from 13C NMR analysis, elemental analysis, and acidic function analysis provided in the literature. Altogether the COSMOtherm calculations showed a good performance and we conclude that it may become a very promising tool for the prediction of sorption in soil organic matter for compounds for which the molecular structure is the only reliable information available. COSMOtherm can be expected to be very robust with respectto new and complex compound structures because its calculations are based on a fundamental assessment of the underlying intermolecular forces. In contrast, other empirical models that are also based on the molecular structure of the sorbate have an application domain that is limited by their calibration data set that is often unknown to the user.

  10. In situ Raman characterization of a diamond film during its growth process in a plasma jet chemical vapor deposition reactor

    Science.gov (United States)

    Rosman, N.; Abello, L.; Chabert, J. P.; Verven, G.; Lucazeau, G.

    1995-07-01

    A setup designed for characterization of a diamond film during its growth in a dc plasma jet chemical vapor deposition reactor is described. It is composed of a pulsed laser and the detector is gated in order to synchronize the Raman detection with the laser pulses. The optical components are designed for working in the visible and near UV. The installation is specially designed for remote detection and can be used in industrial reactors as well as in laboratory experiments. The detectivity of the setup is analyzed through some typical diamond spectra and it is shown that it is of the same order as that of a micro-Raman multichannel spectrometer. Some results are reported on how the temperature and the quality of the film can be controlled during the deposition process or during its etching by H2 reactive plasma. These results are discussed and confirmed by ex situ measurements including Raman, infrared, and scanning electron micrographs obtained on the same samples or in the same conditions as for in situ experiments. The secondary nucleation is responsible for the loss of Raman intensity and it could have some cyclic character.

  11. Growth of magnesium diboride films on 2 inch diameter copper discs by hybrid physical–chemical vapor deposition

    Energy Technology Data Exchange (ETDEWEB)

    Withanage, Wenura K.; Xi, X. X.; Nassiri, Alireza; Lee, Namhoon; Wolak, Matthäus A.; Tan, Teng; Welander, Paul B.; Franzi, Matthew; Tantawi, Sami; Kustom, Robert L.

    2017-02-16

    Magnesium diboride (MgB2) coating is a potential candidate to replace bulk niobium (Nb) for superconducting radio frequency cavities due to the appealing superconducting properties of MgB2. MgB2 coating on copper may allow cavity operation near 20–25 K as a result of the high transition temperature (T c) of MgB2 and excellent thermal conductivity of Cu. We have grown MgB2 films on 2 inch diameter Cu discs by hybrid physical–chemical vapor deposition for radio frequency characterization. Structural and elemental analyses showed a uniform MgB2 coating on top of a Mg–Cu alloy layer with occasional intrusion of Mg–Cu alloy regions. High T c values of around 37 K and high critical current density (J c) on the order of 107 A cm-2 at zero field were observed. Radio frequency measurements at 11.4 GHz confirmed a high T c and showed a quality factor (Q 0) much higher than for Cu and close to that of Nb.

  12. A nitrogen-doped graphene film prepared by chemical vapor deposition of a methanol mist containing methylated melamine resin

    Science.gov (United States)

    Mizuno, T.; Takizawa, M.; Tsuchiya, B.; Jinno, M.; Bandow, S.

    2013-11-01

    The effect of nitrogen doping on the sheet resistivity of a graphene film is systematically studied by changing the doping concentration. The nitrogen-doped graphene film is grown on a Cu foil by chemical vapor deposition using an ultrasonically generated methanol mist containing methylated melamine resin (simply called ‘melamine’). Using this method, it is found that the magnitude of the sheet resistivity is controllable by changing the melamine concentration. Increasing the melamine concentration up to ˜0.03 % causes a decrease of the sheet resistivity. We explain this by the substitutional doping of nitrogen atoms. A further increase in melamine concentration causes an increase of the sheet resistivity. This increase may be caused by the formation of pyridinic or pyrrolic N instead of substitutional N. Electron energy loss spectroscopy analyses for the carbon K-edge indicate a decrease of π ∗ character with increasing melamine concentration up to 0.08 % and then it recovers for higher concentration. This is due to a separation of the graphitic region and the defective region at high melamine concentration.

  13. Catalytic chemical vapor deposition of large-area uniform two-dimensional molybdenum disulfide using sodium chloride

    Science.gov (United States)

    Song, Jeong-Gyu; Ryu, Gyeong Hee; Kim, Youngjun; Woo, Whang Je; Ko, Kyung Yong; Kim, Yongsung; Lee, Changseung; Oh, Il-Kwon; Park, Jusang; Lee, Zonghoon; Kim, Hyungjun

    2017-11-01

    The effective synthesis of atomically thin molybdenum disulfides (MoS2) of high quality and uniformity over a large area is essential for their use in electronic and optical devices. In this work, we synthesize MoS2 that exhibit a high quality and large area uniformity using chemical vapor deposition (CVD) with volatile S organic compound and NaCl catalysts. In the latter process, the NaCl enhances the growth rate (5 min for synthesis of monolayer MoS2) and purity of the synthesized MoS2. The optical microscopy, Raman spectroscopy, x-ray photoemission spectroscopy, photoluminescence, and transmission electron microscopy measurements indicate that the NaCl-CVD MoS2 has a large grain size, clear Raman shift, strong photoluminescence, good stoichiometry, and 6-fold coordination symmetry. Moreover, we demonstrate that the electron mobility (10.4 cm2 V‑1 s‑1) and on/off current ratio (3 × 107) of monolayer MoS2 measured using a field-effect transistor are comparable to those of previously reported MoS2 synthesized using CVD.

  14. Growth of magnesium diboride films on 2 inch diameter copper discs by hybrid physical-chemical vapor deposition

    Science.gov (United States)

    Withanage, Wenura K.; Xi, X. X.; Nassiri, Alireza; Lee, Namhoon; Wolak, Matthäus A.; Tan, Teng; Welander, Paul B.; Franzi, Matthew; Tantawi, Sami; Kustom, Robert L.

    2017-04-01

    Magnesium diboride (MgB2) coating is a potential candidate to replace bulk niobium (Nb) for superconducting radio frequency cavities due to the appealing superconducting properties of MgB2. MgB2 coating on copper may allow cavity operation near 20-25 K as a result of the high transition temperature (T c) of MgB2 and excellent thermal conductivity of Cu. We have grown MgB2 films on 2 inch diameter Cu discs by hybrid physical-chemical vapor deposition for radio frequency characterization. Structural and elemental analyses showed a uniform MgB2 coating on top of a Mg-Cu alloy layer with occasional intrusion of Mg-Cu alloy regions. High T c values of around 37 K and high critical current density (J c) on the order of 107 A cm-2 at zero field were observed. Radio frequency measurements at 11.4 GHz confirmed a high T c and showed a quality factor (Q 0) much higher than for Cu and close to that of Nb.

  15. Thermal conductivity of amorphous and nanocrystalline silicon films prepared by hot-wire chemical-vapor deposition

    Energy Technology Data Exchange (ETDEWEB)

    Jugdersuren, B.; Kearney, B. T.; Queen, D. R.; Metcalf, T. H.; Culbertson, J. C.; Chervin, C. N.; Stroud, R. M.; Nemeth, W.; Wang, Q.; Liu, Xiao

    2017-07-01

    We report 3..omega.. thermal conductivity measurements of amorphous and nanocrystalline silicon thin films from 85 to 300 K prepared by hot-wire chemical-vapor deposition, where the crystallinity of the films is controlled by the hydrogen dilution during growth. The thermal conductivity of the amorphous silicon film is in agreement with several previous reports of amorphous silicon prepared by a variety of deposition techniques. The thermal conductivity of the as-grown nanocrystalline silicon film is 70% higher and increases 35% more after an anneal at 600 degrees C. They all have similarly weak temperature dependence. Structural analysis shows that the as-grown nanocrystalline silicon is approximately 60% crystalline, nanograins and grain boundaries included. The nanograins, averaging 9.1 nm in diameter in the as-grown film, are embedded in an amorphous matrix. The grain size increases to 9.7 nm upon annealing, accompanied by the disappearance of the amorphous phase. We extend the models of grain boundary scattering of phonons with two different non-Debye dispersion relations to explain our result of nanocrystalline silicon, confirming the strong grain size dependence of heat transport for nanocrystalline materials. However, the similarity in thermal conductivity between amorphous and nanocrystalline silicon suggests the heat transport mechanisms in both structures may not be as dissimilar as we currently understand.

  16. High Temperature Nanocomposites For Nuclear Thermal Propulsion and In-Space Fabrication by Hyperbaric Pressure Laser Chemical Vapor Deposition

    Science.gov (United States)

    Maxwell, J. L.; Webb, N. D.; Espinoza, M.; Cook, S.; Houts, M.; Kim, T.

    Nuclear Thermal Propulsion (NTP) is an indispensable technology for the manned exploration of the solar system. By using Hyperbaric Pressure Laser Chemical Vapor Deposition (HP-LCVD), the authors propose to design and build a promising next-generation fuel element composed of uranium carbide UC embedded in a latticed matrix of highly refractory Ta4HfC5 for an NTP rocket capable of sustaining temperatures up to 4000 K, enabling an Isp of up to 1250 s. Furthermore, HP-LCVD technology can also be harnessed to enable 3D rapid prototyping of a variety of materials including metals, ceramics and composites, opening up the possibility of in-space fabrication of components, replacement parts, difficult-to-launch solar sails and panels and a variety of other space structures. Additionally, rapid prototyping with HP-LCVD makes a feasible "live off the land" strategy of interplanetary and interstellar exploration ­ the precursors commonly used in the technology are found, often in abundance, on other solar system bodies either as readily harvestable gas (e.g. methane) or as a raw material that could be converted into a suitable precursor (e.g. iron oxide into ferrocene on Mars).

  17. The Effect of High Temperature Annealing on the Grain Characteristics of a Thin Chemical Vapor Deposition Silicon Carbide Layer.

    Energy Technology Data Exchange (ETDEWEB)

    Isabella J van Rooyen; Philippus M van Rooyen; Mary Lou Dunzik-Gougar

    2013-08-01

    The unique combination of thermo-mechanical and physiochemical properties of silicon carbide (SiC) provides interest and opportunity for its use in nuclear applications. One of the applications of SiC is as a very thin layer in the TRi-ISOtropic (TRISO) coated fuel particles for high temperature gas reactors (HTGRs). This SiC layer, produced by chemical vapor deposition (CVD), is designed to withstand the pressures of fission and transmutation product gases in a high temperature, radiation environment. Various researchers have demonstrated that macroscopic properties can be affected by changes in the distribution of grain boundary plane orientations and misorientations [1 - 3]. Additionally, various researchers have attributed the release behavior of Ag through the SiC layer as a grain boundary diffusion phenomenon [4 - 6]; further highlighting the importance of understanding the actual grain characteristics of the SiC layer. Both historic HTGR fission product release studies and recent experiments at Idaho National Laboratory (INL) [7] have shown that the release of Ag-110m is strongly temperature dependent. Although the maximum normal operating fuel temperature of a HTGR design is in the range of 1000-1250°C, the temperature may reach 1600°C under postulated accident conditions. The aim of this specific study is therefore to determine the magnitude of temperature dependence on SiC grain characteristics, expanding upon initial studies by Van Rooyen et al, [8; 9].

  18. Epitaxial growth of HfS2 on sapphire by chemical vapor deposition and application for photodetectors

    Science.gov (United States)

    Wang, Denggui; Zhang, Xingwang; Liu, Heng; Meng, Junhua; Xia, Jing; Yin, Zhigang; Wang, Ye; You, Jingbi; Meng, Xiang-Min

    2017-09-01

    Group IVB transition metal (Zr and Hf) dichalcogenides (TMDs) have been attracting intensive attention as promising candidates in the modern electronic and/or optoelectronic fields. However, the controllable growth of HfS2 monolayers or few layers still remains a great challenge, thus hindering their further applications so far. Here, for the first time we demonstrate the epitaxial growth of high-quality HfS2 with a controlled number of layers on c-plane sapphire substrates by chemical vapor deposition (CVD). The HfS2 layers exhibit an atomically sharp interface with the sapphire substrate, followed by flat, 2D layers with octahedral coordination. The epitaxial relationship between HfS2 and substrate was determined by x-ray diffraction and transmission electron microscopy measurements to be: HfS2 (0 0 0 1) [10-10]||sapphire (0 0 0 1)[1-100]. Moreover, a high-performance photodetector with a high on/off ratio of more than 103 and an ultrafast response rate of 130 µs for the rise and 155 µs for the decay times were fabricated based on the CVD-grown HfS2 layers on sapphire substrates. This simple and controllable approach opens up a new way to produce highly crystalline HfS2 atomic layers, which are promising materials for nanoelectronics.

  19. Low temperature plasma enhanced chemical vapor deposition of thin films combining mechanical stiffness, electrical insulation, and homogeneity in microcavities

    Science.gov (United States)

    Peter, S.; Günther, M.; Hauschild, D.; Richter, F.

    2010-08-01

    The deposition of hydrogenated amorphous carbon (a-C:H) as well as hydrogenated amorphous silicon carbonitride (SiCN:H) films was investigated in view of a simultaneous realization of a minimum Young's modulus (>70 GPa), a high electrical insulation (≥1 MV/cm), a low permittivity and the uniform coverage of microcavities with submillimeter dimensions. For the a-C:H deposition the precursors methane (CH4) and acetylene (C2H2) were used, while SiCN:H films were deposited from mixtures of trimethylsilane [SiH(CH3)3] with nitrogen and argon. To realize the deposition of micrometer thick films with the aforementioned complex requirements at substrate temperatures ≤200 °C, several plasma enhanced chemical vapor deposition methods were investigated: the capacitively coupled rf discharge and the microwave electron cyclotron resonance (ECR) plasma, combined with two types of pulsed substrate bias. SiCN:H films deposited at about 1 Pa from ECR plasmas with pulsed high-voltage bias best met the requirements. Pulsed biasing with pulse periods of about 1 μs and amplitudes of about -2 kV was found to be most advantageous for the conformal low temperature coating of the microtrenches, thereby ensuring the required mechanical and insulating film properties.

  20. Crystal Engineering for Low Defect Density and High Efficiency Hybrid Chemical Vapor Deposition Grown Perovskite Solar Cells.

    Science.gov (United States)

    Ng, Annie; Ren, Zhiwei; Shen, Qian; Cheung, Sin Hang; Gokkaya, Huseyin Cem; So, Shu Kong; Djurišić, Aleksandra B; Wan, Yangyang; Wu, Xiaojun; Surya, Charles

    2016-12-07

    Synthesis of high quality perovskite absorber is a key factor in determining the performance of the solar cells. We demonstrate that hybrid chemical vapor deposition (HCVD) growth technique can provide high level of versatility and repeatability to ensure the optimal conditions for the growth of the perovskite films as well as potential for batch processing. It is found that the growth ambient and degree of crystallization of CH3NH3PbI3 (MAPI) have strong impact on the defect density of MAPI. We demonstrate that HCVD process with slow postdeposition cooling rate can significantly reduce the density of shallow and deep traps in the MAPI due to enhanced material crystallization, while a mixed O2/N2 carrier gas is effective in passivating both shallow and deep traps. By careful control of the perovskite growth process, a champion device with power conversion efficiency of 17.6% is achieved. Our work complements the existing theoretical studies on different types of trap states in MAPI and fills the gap on the theoretical analysis of the interaction between deep levels and oxygen. The experimental results are consistent with the theoretical predictions.

  1. Vertically aligned Si nanocrystals embedded in amorphous Si matrix prepared by inductively coupled plasma chemical vapor deposition (ICP-CVD)

    Energy Technology Data Exchange (ETDEWEB)

    Nogay, G. [Department of Physics, Middle East Technical University (METU), Ankara 06800 (Turkey); Center of Solar Energy Research and Application (GÜNAM), Middle East Technical University (METU), Ankara 06800 (Turkey); Saleh, Z.M., E-mail: zaki.saleh@aauj.edu [Center of Solar Energy Research and Application (GÜNAM), Middle East Technical University (METU), Ankara 06800 (Turkey); Department of Physics, Arab American University–Jenin (AAUJ), Jenin, Palestine (Country Unknown); Özkol, E. [Center of Solar Energy Research and Application (GÜNAM), Middle East Technical University (METU), Ankara 06800 (Turkey); Department of Chemical Engineering, Middle East Technical University (METU), Ankara 06800 (Turkey); Turan, R. [Department of Physics, Middle East Technical University (METU), Ankara 06800 (Turkey); Center of Solar Energy Research and Application (GÜNAM), Middle East Technical University (METU), Ankara 06800 (Turkey)

    2015-06-15

    Highlights: • Inductively-coupled plasma is used for nanostructured silicon at room temperature. • Low temperature deposition allows device processing on various substrates. • Deposition pressure is the most effective parameter in controlling nanostructure. • Films consist of quantum dots in a-Si matrix and exhibit columnar vertical growth. • Films are porous to oxygen infusion along columnar grain boundaries. - Abstract: Vertically-aligned nanostructured silicon films are deposited at room temperature on p-type silicon wafers and glass substrates by inductively-coupled, plasma-enhanced chemical vapor deposition (ICPCVD). The nanocrystalline phase is achieved by reducing pressure and increasing RF power. The crystalline volume fraction (X{sub c}) and the size of the nanocrystals increase with decreasing pressure at constant power. Columnar growth of nc-Si:H films is observed by high resolution transmission electron microscopy (HRTEM) and scanning electron microscopy (SEM). The films exhibit cauliflower-like structures with high porosity that leads to slow but uniform oxidation after exposure to air at room temperature. Films deposited at low pressures exhibit photoluminescence (PL) signals that may be deconvoluted into three distinct Gaussian components: 760–810, 920–935, and 990–1000 nm attributable to the quantum confinement and interface defect states. Hydrogen dilution is manifested in significant enhancement of the PL, but it has little effect on the nanocrystal size and X{sub c}.

  2. Cobalt(I) Olefin Complexes: Precursors for Metal-Organic Chemical Vapor Deposition of High Purity Cobalt Metal Thin Films.

    Science.gov (United States)

    Hamilton, Jeff A; Pugh, Thomas; Johnson, Andrew L; Kingsley, Andrew J; Richards, Stephen P

    2016-07-18

    We report the synthesis and characterization of a family of organometallic cobalt(I) metal precursors based around cyclopentadienyl and diene ligands. The molecular structures of the complexes cyclopentadienyl-cobalt(I) diolefin complexes are described, as determined by single-crystal X-ray diffraction analysis. Thermogravimetric analysis and thermal stability studies of the complexes highlighted the isoprene, dimethyl butadiene, and cyclohexadiene derivatives [(C5H5)Co(η(4)-CH2CHC(Me)CH2)] (1), [(C5H5)Co(η(4)-CH2C(Me)C(Me)CH2)] (2), and [(C5H5)Co(η(4)-C6H8)] (4) as possible cobalt metal organic chemical vapor deposition (MOCVD) precursors. Atmospheric pressure MOCVD was employed using precursor 1, to synthesize thin films of metallic cobalt on silicon substrates under an atmosphere (760 torr) of hydrogen (H2). Analysis of the thin films deposited at substrate temperatures of 325, 350, 375, and 400 °C, respectively, by scanning electron microscopy and atomic force microscopy reveal temperature-dependent growth features. Films grown at these temperatures are continuous, pinhole-free, and can be seen to be composed of hexagonal particles clearly visible in the electron micrograph. Powder X-ray diffraction and X-ray photoelectron spectroscopy all show the films to be highly crystalline, high-purity metallic cobalt. Raman spectroscopy was unable to detect the presence of cobalt silicides at the substrate/thin film interface.

  3. Cobalt Chemical Vapor Deposition Process on Molybdenite Basal Plane Observed by Ultrahigh-Vacuum Scanning Tunneling Microscopy

    Science.gov (United States)

    Komiyama, Masaharu; Kiyohara, Kohei; Yoda, Eisuke; Kubota, Takeshi; Okamoto, Yasuaki

    2005-07-01

    The processes of high-temperature (473 K) resulfidation and cobalt carbonyl adsorption by chemical vapor deposition (CVD) on a cleaved basal plane of a natural molybdenite (MoS2) single crystal were examined by ultrahigh-vacuum scanning tunneling microscopy (UHV-STM) on the nanometer scale. The resulfided cleaved molybdenite basal plane showed a displacement of upper terraces, and a sinusoidal structure at step edges, both of which may be caused by the electronic effect at the surface. Cobalt carbonyl appeared to be adsorbed at both the S- and Mo-terminated edges, resulting in an agglomeration at the step edges on lower terraces with a width of a few tens of nanometers. When this surface with adsorbed carbonyl was sulfided at 513 K for 1 h, most of the adsorbed carbonyl clusters appeared to be desorbed while a small part were dispersed on the terraces in small clusters of 10-20 nm in size. The obtained results are discussed in terms of the preparation of Co-Mo hydrodesulfurization (HDS) catalysts.

  4. Fiber Effects on Minicomposite Mechanical Properties for Several Silicon Carbide Fiber: Chemically Vapor-Infiltrated Silicon Carbide Matrix Systems

    Science.gov (United States)

    Morscher, Gregory N.; Martinez-Fernandez, Julian

    1999-01-01

    Several different types of SiC fiber tows were coated with BN and composited using chemically vapor-infiltrated SiC to form single-tow minicomposites. The types of SiC fiber included Nicalon(sup TM), Hi-Nicalon(sup TM), and the new Sylramic(sup TM) polycrystalline SiC fiber. The interfacial shear stresses were determined from unload-reload tensile hysteresis-loop tests. The ultimate stress and strain properties also were determined for the minicomposites. The ultimate strengths of the newer Hi-Nicalon and Sylramic fibers were superior to that of Nicalon minicomposites with similar fiber volume fractions. The Sylramic minicomposites had the lowest strain to failure and highest interfacial shear strength, respectively, because of the high modulus of the fiber and the rough surface of this fiber type. The apparent interfacial shear strength increased as the stress increased for the Sylramic minicomposites, which also was attributed to the surface roughness of this fiber.

  5. Growth of InAs Quantum Dots on Germanium Substrate Using Metal Organic Chemical Vapor Deposition Technique

    Directory of Open Access Journals (Sweden)

    Tyagi Renu

    2009-01-01

    Full Text Available Abstract Self-assembled InAs quantum dots (QDs were grown on germanium substrates by metal organic chemical vapor deposition technique. Effects of growth temperature and InAs coverage on the size, density, and height of quantum dots were investigated. Growth temperature was varied from 400 to 450 °C and InAs coverage was varied between 1.40 and 2.35 monolayers (MLs. The surface morphology and structural characteristics of the quantum dots analyzed by atomic force microscope revealed that the density of the InAs quantum dots first increased and then decreased with the amount of InAs coverage; whereas density decreased with increase in growth temperature. It was observed that the size and height of InAs quantum dots increased with increase in both temperature and InAs coverage. The density of QDs was effectively controlled by growth temperature and InAs coverage on GaAs buffer layer.

  6. Chemical vapor deposition and analysis of thermally insulating ZrO{sub 2} layers on injection molds

    Energy Technology Data Exchange (ETDEWEB)

    Atakan, Burak; Khlopyanova, Victoria; Mausberg, Simon; Kandzia, Adrian; Pflitsch, Christian [Thermodynamik (IVG) and Cenide, Universitaet Duisburg-Essen, Lotharstr. 1, 47057 Duisburg (Germany); Mumme, Frank [Kunststoff-Institut Luedenscheid, Karolinenstrasse 8, 58507 Luedenscheid (Germany)

    2015-07-15

    High quality injection molding requires a precise control of cooling rates. Thermal barrier coating (TBC) of zirconia with a thickness of 20-40 μm on polished stainless steel molds could provide the necessary insulating effect. This paper presents results of zirconia deposition on stainless steel substrates using chemical vapor deposition (CVD) aiming to provide the process parameters for the deposition of uniform zirconia films with such a thickness. The deposition was performed with zirconium (IV) acetylacetonate (Zr(C{sub 5}H{sub 7}O{sub 2}){sub 4}) as precursor and synthetic air as co-reactant, which allows deposition at temperatures below 600 C. The experiments were carried out in a hot-wall reactor at pressures between 7.5 mbar and 500 mbar and in a temperature range from 450 C to 600 C. Important growth parameters were characterized and growth rates between 1 and 2.5 μm/h were achieved. Thick and well adhering zirconia layers of 38 μm could be produced on steel within 40 h. The transient heat transfer rate upon contact with a hot surface was also evaluated experimentally with the thickest coatings. These exhibit a good TBC performance. (copyright 2015 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

  7. Layer-Controlled Chemical Vapor Deposition Growth of MoS2 Vertical Heterostructures via van der Waals Epitaxy.

    Science.gov (United States)

    Samad, Leith; Bladow, Sage M; Ding, Qi; Zhuo, Junqiao; Jacobberger, Robert M; Arnold, Michael S; Jin, Song

    2016-07-26

    The fascinating semiconducting and optical properties of monolayer and few-layer transition metal dichalcogenides, as exemplified by MoS2, have made them promising candidates for optoelectronic applications. Controllable growth of heterostructures based on these layered materials is critical for their successful device applications. Here, we report a direct low temperature chemical vapor deposition (CVD) synthesis of MoS2 monolayer/multilayer vertical heterostructures with layer-controlled growth on a variety of layered materials (SnS2, TaS2, and graphene) via van der Waals epitaxy. Through precise control of the partial pressures of the MoCl5 and elemental sulfur precursors, reaction temperatures, and careful tracking of the ambient humidity, we have successfully and reproducibly grown MoS2 vertical heterostructures from 1 to 6 layers over a large area. The monolayer MoS2 heterostructure was verified using cross-sectional high resolution transmission electron microscopy (HRTEM) while Raman and photoluminescence spectroscopy confirmed the layer-controlled MoS2 growth and heterostructure electronic interactions. Raman, photoluminescence, and energy dispersive X-ray spectroscopy (EDS) mappings verified the uniform coverage of the MoS2 layers. This reaction provides an ideal method for the scalable layer-controlled growth of transition metal dichalcogenide heterostructures via van der Waals epitaxy for a variety of optoelectronic applications.

  8. A Comparative Study of Three Different Chemical Vapor Deposition Techniques of Carbon Nanotube Growth on Diamond Films

    Directory of Open Access Journals (Sweden)

    Betty T. Quinton

    2013-01-01

    Full Text Available This paper compares between the methods of growing carbon nanotubes (CNTs on diamond substrates and evaluates the quality of the CNTs and the interfacial strength. One potential application for these materials is a heat sink/spreader for high-power electronic devices. The CNTs and diamond substrates have a significantly higher specific thermal conductivity than traditional heat sink/spreader materials making them good replacement candidates. Only limited research has been performed on these CNT/diamond structures and their suitability of different growth methods. This study investigates three potential chemical vapor deposition (CVD techniques for growing CNTs on diamond: thermal CVD (T-CVD, microwave plasma-enhanced CVD (MPE-CVD, and floating catalyst thermal CVD (FCT-CVD. Scanning electron microscopy (SEM and high-resolution transmission electron microscopy (TEM were used to analyze the morphology and topology of the CNTs. Raman spectroscopy was used to assess the quality of the CNTs by determining the ID/IG peak intensity ratios. Additionally, the CNT/diamond samples were sonicated for qualitative comparisons of the durability of the CNT forests. T-CVD provided the largest diameter tubes, with catalysts residing mainly at the CNT/diamond interface. The MPE-CVD process yielded non uniform defective CNTs, and FCT-CVD resulted in the smallest diameter CNTs with catalyst particles imbedded throughout the length of the nanotubes.

  9. A new perspective on structural and morphological properties of carbon nanotubes synthesized by Plasma Enhanced Chemical Vapor Deposition technique

    Directory of Open Access Journals (Sweden)

    A. Salar Elahi

    Full Text Available CNTs were produced on a silicon wafer by Plasma Enhanced Chemical Vapor Deposition (PECVD using acetylene as a carbon source, cobalt as a catalyst and ammonia as a reactive gas. The DC-sputtering system was used to prepare cobalt thin films on Si substrates. A series of experiments was carried out to investigate the effects of reaction temperature and deposition time on the synthesis of the nanotubes. The deposition time was selected as 15 and 25 min for all growth temperatures. Energy Dispersive X-ray (EDX measurements were used to investigate the elemental composition of the Co nanocatalyst deposited on Si substrates. Atomic Force Microscopy (AFM was used to characterize the surface topography of the Co nanocatalyst deposited on Si substrates. The as-grown CNTs were characterized under Field Emission Scanning Electron Microscopy (FESEM to study the morphological properties of CNTs. Also, the grown CNTs have been investigated by High Resolution Transmission Electron Microscopy (HRTEM and Raman spectroscopy. The results demonstrated that increasing the temperature leads to increasing the diameter of CNTs. Keywords: Carbon nanotubes, Cobalt nanocatalyst, PECVD

  10. Suppression of Graphene Nucleation by Turning Off Hydrogen Supply Just before Atmospheric Pressure Chemical Vapor Deposition Growth

    Directory of Open Access Journals (Sweden)

    Seiya Suzuki

    2017-11-01

    Full Text Available To exploit the extraordinary property of graphene in practical electrical and optical devices, it is necessary to produce large-sized, single-crystal graphene. Atmospheric pressure chemical vapor deposition (APCVD on polycrystalline Cu surface is a promising scalable route of graphene synthesis but the unavoidable multiple nucleation limits their reachable domain size. Here, we report that effective suppression of nucleation was achieved by only turning off hydrogen supply before introduction of the carbon source for graphene growth. The density of graphene decreased from 72.0 to 2.2 domains/cm2 by turning off hydrogen for 15 min. X-ray photoelectron spectroscopy and Raman spectroscopy studies show that the Cu surface was covered with 3–4 nm thick highly crystalline Cu2O, which would be caused by oxidation by residual oxidative gasses in the chamber during the turning off period. It was also revealed that elevating the temperature in Ar followed by annealing in H2/Ar before turning off hydrogen led to the enlargement of the Cu domain, resulting in the further suppression of nucleation. By optimizing such growth parameters in the CVD process, a single-crystal graphene with ~2.6 mm in diameter was successfully obtained.

  11. Frictional behavior of atomically thin sheets: hexagonal-shaped graphene islands grown on copper by chemical vapor deposition.

    Science.gov (United States)

    Egberts, Philip; Han, Gang Hee; Liu, Xin Z; Johnson, A T Charlie; Carpick, Robert W

    2014-05-27

    Single asperity friction experiments using atomic force microscopy (AFM) have been conducted on chemical vapor deposited (CVD) graphene grown on polycrystalline copper foils. Graphene substantially lowers the friction force experienced by the sliding asperity of a silicon AFM tip compared to the surrounding oxidized copper surface by a factor ranging from 1.5 to 7 over loads from the adhesive minimum up to 80 nN. No damage to the graphene was observed over this range, showing that friction force microscopy serves as a facile, high contrast probe for identifying the presence of graphene on Cu. Consistent with studies of epitaxially grown, thermally grown, and mechanically exfoliated graphene films, the friction force measured between the tip and these CVD-prepared films depends on the number of layers of graphene present on the surface and reduces friction in comparison to the substrate. Friction results on graphene indicate that the layer-dependent friction properties result from puckering of the graphene sheet around the sliding tip. Substantial hysteresis in the normal force dependence of friction is observed with repeated scanning without breaking contact with a graphene-covered region. Because of the hysteresis, friction measured on graphene changes with time and maximum applied force, unless the tip slides over the edge of the graphene island or contact with the surface is broken. These results also indicate that relatively weak binding forces exist between the copper foil and these CVD-grown graphene sheets.

  12. Quasi-periodic nanoripples in graphene grown by chemical vapor deposition and its impact on charge transport.

    Science.gov (United States)

    Ni, Guang-Xin; Zheng, Yi; Bae, Sukang; Kim, Hye Ri; Pachoud, Alexandre; Kim, Young Soo; Tan, Chang-Ling; Im, Danho; Ahn, Jong-Hyun; Hong, Byung Hee; Ozyilmaz, Barbaros

    2012-02-28

    The technical breakthrough in synthesizing graphene by chemical vapor deposition methods (CVD) has opened up enormous opportunities for large-scale device applications. To improve the electrical properties of CVD graphene grown on copper (Cu-CVD graphene), recent efforts have focused on increasing the grain size of such polycrystalline graphene films to 100 μm and larger. While an increase in grain size and, hence, a decrease of grain boundary density is expected to greatly enhance the device performance, here we show that the charge mobility and sheet resistance of Cu-CVD graphene is already limited within a single grain. We find that the current high-temperature growth and wet transfer methods of CVD graphene result in quasi-periodic nanoripple arrays (NRAs). Electron-flexural phonon scattering in such partially suspended graphene devices introduces anisotropic charge transport and sets limits to both the highest possible charge mobility and lowest possible sheet resistance values. Our findings provide guidance for further improving the CVD graphene growth and transfer process.

  13. Fluorescent carbon quantum dots synthesized by chemical vapor deposition: An alternative candidate for electron acceptor in polymer solar cells

    Science.gov (United States)

    Cui, Bo; Yan, Lingpeng; Gu, Huimin; Yang, Yongzhen; Liu, Xuguang; Ma, Chang-Qi; Chen, Yongkang; Jia, Husheng

    2018-01-01

    Excitation-wavelength-dependent blue-greenish fluorescent carbon quantum dots (CQDs) with graphite structure were synthesized by chemical vapor deposition (CVD) method. In comparison with those synthesized by hydrothermal method (named H-CQDs), C-CQDs have less hydrophilic terminal groups, showing good solubility in common organic solvents. Furthermore, these synthesized C-CQDs show a low LUMO energy level (LUMO = -3.84 eV), which is close to that of phenyl-C61-butyric acid methyl ester (PC61BM, LUMO = -4.01 eV), the most widely used electron acceptor in polymer solar cells. Photoluminescence quenching of the poly(3-hexylthiophene-2,5-diyl):C-CQDs blended film (P3HT:C-CQDs) indicated that a photo-induced charge transfer between P3HT and C-CQDs occurs in such a composite film. Bulk heterojunction solar cells using C-CQDs as electron acceptors or doping materials were fabricated and tested. High fill factors were achieved for these C-CQDs based polymer solar cells, demonstrating that CQDs synthesized by CVD could be alternative to the fullerene derivatives for applying in polymer solar cells.

  14. Monolayer Single-Crystal 1T'-MoTe2 Grown by Chemical Vapor Deposition Exhibits Weak Antilocalization Effect.

    Science.gov (United States)

    Naylor, Carl H; Parkin, William M; Ping, Jinglei; Gao, Zhaoli; Zhou, Yu Ren; Kim, Youngkuk; Streller, Frank; Carpick, Robert W; Rappe, Andrew M; Drndić, Marija; Kikkawa, James M; Johnson, A T Charlie

    2016-07-13

    Growth of transition metal dichalcogenide (TMD) monolayers is of interest due to their unique electrical and optical properties. Films in the 2H and 1T phases have been widely studied but monolayers of some 1T'-TMDs are predicted to be large-gap quantum spin Hall insulators, suitable for innovative transistor structures that can be switched via a topological phase transition rather than conventional carrier depletion [ Qian et al. Science 2014 , 346 , 1344 - 1347 ]. Here we detail a reproducible method for chemical vapor deposition of monolayer, single-crystal flakes of 1T'-MoTe2. Atomic force microscopy, Raman spectroscopy, X-ray photoelectron spectroscopy, and transmission electron microscopy confirm the composition and structure of MoTe2 flakes. Variable temperature magnetotransport shows weak antilocalization at low temperatures, an effect seen in topological insulators and evidence of strong spin-orbit coupling. Our approach provides a pathway to systematic investigation of monolayer, single-crystal 1T'-MoTe2 and implementation in next-generation nanoelectronic devices.

  15. Chemical vapor deposition of silicon nanodots on TiO{sub 2} submicronic powders in vibrated fluidized bed

    Energy Technology Data Exchange (ETDEWEB)

    Cadoret, L. [Laboratoire de Genie Chimique, UMR CNRS 5503, Universite de Toulouse, ENSIACET/INPT, 4 allee Emile Monso, BP 74233, 31432 Toulouse Cedex 4 (France); Rossignol, C.; Dexpert-Ghys, J. [CEMES, UPR CNRS 8011, UPS-Toulouse, 29 rue Jean Marvig, 31055 Toulouse Cedex 4 (France); Caussat, B., E-mail: Brigitte.Caussat@ensiacet.fr [Laboratoire de Genie Chimique, UMR CNRS 5503, Universite de Toulouse, ENSIACET/INPT, 4 allee Emile Monso, BP 74233, 31432 Toulouse Cedex 4 (France)

    2010-06-15

    Silicon nanodots have been deposited on TiO{sub 2} submicronic powders in a vibrated fluidized bed chemical vapor deposition (FBCVD) reactor from silane SiH{sub 4}. Deposition conditions involving very low deposition rates have been studied. After treatment, powders are under the form of micronic agglomerates. In the operating range tested, this agglomerates formation mainly depends on the fluidization conditions and not on the CVD parameters. The best results have been obtained for anatase TiO{sub 2} powders for which the conditions of fluidization have been the most optimized. For these anatase powders, agglomerates are porous. SEM and TEM imaging prove that silicon nanodots (8-10 nm in size) have been deposited on the surface of particles and that this deposition is uniform on the whole powders and conformal around each grain, even if not fully continuous. Raman spectroscopy shows that the TiO{sub 2} powders have been partially reduced into TiO{sub 2-x} during deposition. The TiO{sub 2} stoichiometry can be recovered by annealing under air, and IR spectroscopy indicates that the deposited silicon nanodots have been at least partly oxidized into SiO{sub 2} after this annealing.

  16. In-situ epitaxial growth of heavily phosphorus doped SiGe by low pressure chemical vapor deposition

    CERN Document Server

    Lee, C J

    1998-01-01

    We have studied epitaxial crystal growth of Si sub 1 sub - sub x Ge sub x films on silicon substrates at 550 .deg. C by low pressure chemical vapor deposition. In a low PH sub 3 partial pressure region such as below 1.25x10 sup - sup 3 Pa, both the phosphorus and carrier concentrations increased with increasing PH sub 3 partial pressure, but the deposition rate and the Ge fraction remained constant. In a higher PH sub 3 partial pressure region, the deposition rate, the phosphorus concentration, and the carrier concentration decreased, while the Ge fraction increased. These suggest that high surface coverage of phosphorus suppresses both SiH sub 4 and GeH sub 4 adsorption/reactions on the surfaces, and its suppression effect on SiH sub 4 is actually much stronger than on GeH sub 4. In particular, epitaxial crystal growth is largely controlled by surface coverage effect of phosphorus in a higher PH sub 3 partial pressure region.

  17. Deposition of titanium coating on SiC fiber by chemical vapor deposition with Ti-I2 system

    Science.gov (United States)

    Luo, Xian; Wu, Shuai; Yang, Yan-qing; Jin, Na; Liu, Shuai; Huang, Bin

    2017-06-01

    Titanium coating was prepared on SiC fiber using titanium-iodine (Ti-I2) mixture by hot-wall chemical vapor deposition. Thermodynamic analysis and experimental observation were carried out in this work. The thermodynamic analysis of the reactions in the Ti-I2 system indicates that Ti and I2 raw powder materials transform to titanium coating as follows: Ti + I2 → (TiI2, TiI3), and (TiI2, TiI3) → Ti. In theory, the conversions of TiI3 and TiI2 reach the maximum when Ti:I2 is 1:1.5, while in actual experiment that reached the maximum when Ti:I2 was 1:2, as there existed the waste of I2 due to sublimation. Typical deposited coating is relatively flat and uniform. However, as SiC is prone to react with Ti at high temperatures, the obtained coating contained some Si and C elements except for Ti. So the coating was not a pure Ti coating but contained some carbides and silicides. Deposition rate of the coating increased with the increase of temperature. The deposited thickness increased with the increase of heat preservation time, and achieved the maximum thickness at 90 min.

  18. Spectroscopic properties of nitrogen doped hydrogenated amorphous carbon films grown by radio frequency plasma-enhanced chemical vapor deposition

    Science.gov (United States)

    Hayashi, Y.; Yu, G.; Rahman, M. M.; Krishna, K. M.; Soga, T.; Jimbo, T.; Umeno, M.

    2001-06-01

    Nitrogen doped hydrogenated amorphous carbon thin films have been deposited by rf plasma-enhanced chemical vapor deposition using CH4 as the source of carbon and with different nitrogen flow rates (N2/CH4 gas ratios between 0 and 3), at 300 K. The dependence modifications of the optical and the structural properties on nitrogen incorporation were investigated using different spectroscopic techniques, such as, Raman spectroscopy, Fourier transform infrared spectroscopy, x-ray photoelectron spectroscopy, ultraviolet-visible (UV-VIS) spectroscopy, electron spin resonance (ESR), photoluminescence (PL) and spectroscopic ellipsometry (SE). Raman spectroscopy and IR absorption reveal an increase in sp2-bonded carbon or a change in sp2 domain size with increasing nitrogen flow rate. It is found that the configuration of nitrogen atoms incorporated into an amorphous carbon network gradually changes from nitrogen atoms surrounded by three (σ bonded) to two (π bonded) neighboring carbons with increasing nitrogen flow rate. Tauc optical gap is reduced from 2.6 to 2.0 eV, and the ESR spin density and the peak-to-peak linewidth increase sharply with increasing nitrogen flow rate. Excellent agreement has been found between the measured SE data and modeled spectra, in which an empirical dielectric function of amorphous materials and a linear void distribution along the thickness have been assumed. The influence of nitrogen on the electronic density of states is explained based on the optical properties measured by UV-VIS and PL including nitrogen lone pair band.

  19. Effects of surface oxidation of Cu substrates on the growth kinetics of graphene by chemical vapor deposition.

    Science.gov (United States)

    Chang, Ren-Jie; Lee, Chia-Hao; Lee, Min-Ken; Chen, Chun-Wei; Wen, Cheng-Yen

    2017-02-09

    Although the success of graphene research has opened up a new route for wearable electronic and optoelectronic devices, producing graphene with controllable quality and cost-effective growth on a large scale remains challenging due to the lack of understanding about its growth kinetics. Domain boundaries interrupt lattice continuity of graphene; therefore, lowering the nucleation density at the initial stage of graphene growth in the chemical vapor deposition (CVD) process is beneficial for improving the quality of graphene for applications. Herein, we show that by forming an oxide passivation layer on Cu substrates before CVD graphene growth, graphene nucleation density can be effectively decreased. The nucleation mechanism in the presence of an oxide passivation layer is of interest. The analysis of graphene growth kinetics suggests that the thickness of the boundary layer for mass transfer on the substrate surface plays an important role in controlling the reduction rate of the oxide passivation layer. A thick boundary layer created under slow gas flow causes slow reduction of the oxide passivation layer, making finite sites for graphene nucleation. The domain density in a graphene layer is therefore significantly reduced. Graphene sheets of various domain densities (ranging from 104 to 1 mm-2) can be fabricated by suitably choosing the growth parameters. The graphene sheet with a lower density of domain boundaries exhibits better electrical conductivities.

  20. One-step chemical vapor deposition synthesis and supercapacitor performance of nitrogen-doped porous carbon–carbon nanotube hybrids

    Directory of Open Access Journals (Sweden)

    Egor V. Lobiak

    2017-12-01

    Full Text Available Novel nitrogen-doped carbon hybrid materials consisting of multiwalled nanotubes and porous graphitic layers have been produced by chemical vapor deposition over magnesium-oxide-supported metal catalysts. CNx nanotubes were grown on Co/Mo, Ni/Mo, or Fe/Mo alloy nanoparticles, and MgO grains served as a template for the porous carbon. The simultaneous formation of morphologically different carbon structures was due to the slow activation of catalysts for the nanotube growth in a carbon-containing gas environment. An analysis of the obtained products by means of transmission electron microscopy, thermogravimetry and X-ray photoelectron spectroscopy methods revealed that the catalyst's composition influences the nanotube/porous carbon ratio and concentration of incorporated nitrogen. The hybrid materials were tested as electrodes in a 1M H2SO4 electrolyte and the best performance was found for a nitrogen-enriched material produced using the Fe/Mo catalyst. From the electrochemical impedance spectroscopy data, it was concluded that the nitrogen doping reduces the resistance at the carbon surface/electrolyte interface and the nanotubes permeating the porous carbon provide fast charge transport in the cell.

  1. Red emission from Eu-doped GaN luminescent films grown by metalorganic chemical vapor deposition

    Science.gov (United States)

    Pan, M.; Steckl, A. J.

    2003-07-01

    Bright red emission has been obtained at room temperature from Eu-doped GaN films pumped by 325 nm HeCd laser. The luminescent films were grown by metalorganic chemical vapor deposition on GaN/Al2O3 substrates. Trimethylgallium (TMGa), ammonia (NH3), and europium 2,2,4,4-tetramethyl-3,5-heptanedionate were used as sources for Ga, N, and Eu dopant, respectively. The influence of the V/III ratio during growth on the photoluminescence (PL) intensity has been studied using a fixed TMGa flow rate of 92 μmol/min and varying the NH3 flow rate. The film growth rate (˜2 μm/h) is nearly constant with V/III ratio over the range from ˜30 to ˜1000. The Eu incorporation in GaN films was found to decrease with increasing V/III ratio. The Eu PL intensity (normalized to the Eu concentration) exhibited a maximum at a V/III ratio of ˜100.

  2. SiC/Si heterojunction diodes fabricated by self-selective and by blanket rapid thermal chemical vapor deposition

    Energy Technology Data Exchange (ETDEWEB)

    Yih, P.H.; Li, J.P.; Steckl, A.J. (Univ. of Cincinnati, OH (United States). Dept. of Electrical and Computer Engineering)

    1994-03-01

    SiC/Si heterojunction diodes have been fabricated by two different rapid thermal chemical vapor deposition (RTCVD) processes: a localized self-selective growth and blanket growth. The self-selective growth of crystalline cubic ([beta]) SiC was obtained by propane carbonization of the Si substrate in regions unprotected by an SiO[sub 2] layer, producing planar diodes. Mesa diodes were fabricated using the blanket growth of polycrystalline [beta]-SiC produced by the decomposition of methylsilane (CH[sub 3]SiH[sub 3]). The SiC/Si heterojunction diodes show good rectifying properties for both device structures. Reverse breakdown voltage of 50 V was obtained with the self-selective SiC/Si diode. The mesa diodes exhibited even higher breakdown voltages (V[sub br]) of 150 V and excellent ideality factors of 1.06 at 25 C. The high V[sub br] and good forward rectifying characteristics indicate that the SiC/Si heterojunction diode represents a promising approach for the fabrication of wide-gap emitter SiC/Si heterojunction bipolar transistors.

  3. Mechanism of high growth rate for diamond-like carbon films synthesized by helicon wave plasma chemical vapor deposition

    Science.gov (United States)

    Peiyu, JI; Jun, YU; Tianyuan, HUANG; Chenggang, JIN; Yan, YANG; Lanjian, ZHUGE; Xuemei, WU

    2018-02-01

    A high growth rate fabrication of diamond-like carbon (DLC) films at room temperature was achieved by helicon wave plasma chemical vapor deposition (HWP-CVD) using Ar/CH4 gas mixtures. The microstructure and morphology of the films were characterized by Raman spectroscopy and scanning electron microscopy. The diagnosis of plasma excited by a helicon wave was measured by optical emission spectroscopy and a Langmuir probe. The mechanism of high growth rate fabrication for DLC films by HWP-CVD has been discussed. The growth rate of the DLC films reaches a maximum value of 54 μm h‑1 at the CH4 flow rate of 85 sccm, which is attributed to the higher plasma density during the helicon wave plasma discharge. The CH and H α radicals play an important role in the growth of DLC films. The results show that the H α radicals are beneficial to the formation and stabilization of C=C bond from sp2 to sp3.

  4. Characterization of low temperature graphene synthesis in inductively coupled plasma chemical vapor deposition process with optical emission spectroscopy.

    Science.gov (United States)

    Ma, Yifei; Kim, Daekyoung; Jang, Haegyu; Cho, Sung Min; Chae, Heeyeop

    2014-12-01

    Low-temperature graphene was synthesized at 400 degrees C with inductively coupled plasma chemical vapor deposition (PECVD) process. The effects of plasma power and flow rate of various carbon containing precursors and hydrogen on graphene properties were investigated with optical emission spectroscopy (OES). Various radicals monitored by OES were correlated with graphene film properties such as sheet resistance, I(D)/I(G) ratio of Raman spectra and transparency. C2H2 was used as a main precursor and the increase of plasma power enhanced intensity of carbon (C2) radical OES intensity in plasma, reduced sheet resistance and increased transparency of graphene films. The reduced flow rate of C2H2 decreased sheet resistance and increased transparency of graphene films in the range of this study. H2 addition was found to increase sheet resistance, transparency and attributed to reduction of graphene grain and etching graphene layers. OES analysis showed that C2 radicals contribute to graphite networking and sheet resistance reduction. TEM and AFM were applied to provide credible information that graphene had been successfully grown at low temperature.

  5. Synthesis of large scale graphene oxide using plasma enhanced chemical vapor deposition method and its application in humidity sensing

    Energy Technology Data Exchange (ETDEWEB)

    Liu, Yang; Chen, Yuming, E-mail: yumingchen@fudan.edu.cn [Institute for Electric Light Sources, Fudan University, 220 Handan Road, Shanghai 200433 (China); Engineering Research Center of Advanced Lighting Technology, Ministry of Education, 220 Handan Road, Shanghai 00433 (China)

    2016-03-14

    Large scale graphene oxide (GO) is directly synthesized on copper (Cu) foil by plasma enhanced chemical vapor deposition method under 500 °C and even lower temperature. Compared to the modified Hummer's method, the obtained GO sheet in this article is large, and it is scalable according to the Cu foil size. The oxygen-contained groups in the GO are introduced through the residual gas of methane (99.9% purity). To prevent the Cu surface from the bombardment of the ions in the plasma, we use low intensity discharge. Our experiment reveals that growth temperature has important influence on the carbon to oxygen ratio (C/O ratio) in the GO; and it also affects the amount of π-π* bonds between carbon atoms. Preliminary experiments on a 6 mm × 12 mm GO based humidity sensor prove that the synthesized GO reacts well to the humidity change. Our GO synthesis method may provide another channel for obtaining large scale GO in gas sensing or other applications.

  6. Chemical Vapor Deposition Growth of Degenerate p-Type Mo-Doped ReS2 Films and Their Homojunction.

    Science.gov (United States)

    Qin, Jing-Kai; Shao, Wen-Zhu; Xu, Cheng-Yan; Li, Yang; Ren, Dan-Dan; Song, Xiao-Guo; Zhen, Liang

    2017-05-10

    Substitutional doping of transition metal dichalcogenide two-dimensional materials has proven to be effective in tuning their intrinsic properties, such as band gap, transport characteristics, and magnetism. In this study, we realized substitutional doping of monolayer rhenium disulfide (ReS2) with Mo via chemical vapor deposition. Scanning transmission electron microscopy demonstrated that Mo atoms are successfully doped into ReS2 by substitutionally replacing Re atoms in the lattice. Electrical measurements revealed the degenerate p-type semiconductor behavior of Mo-doped ReS2 field effect transistors, in agreement with density functional theory calculations. The p-n diode device based on a doped ReS2 and ReS2 homojunction exhibited gate-tunable current rectification behaviors, and the maximum rectification ratio could reach up to 150 at Vd = -2/+2 V. The successful synthesis of p-type ReS2 in this study could largely promote its application in novel electronic and optoelectronic devices.

  7. Preparation of hydrophobic metal-organic frameworks via plasma enhanced chemical vapor deposition of perfluoroalkanes for the removal of ammonia.

    Science.gov (United States)

    DeCoste, Jared B; Peterson, Gregory W

    2013-10-10

    Plasma enhanced chemical vapor deposition (PECVD) of perfluoroalkanes has long been studied for tuning the wetting properties of surfaces. For high surface area microporous materials, such as metal-organic frameworks (MOFs), unique challenges present themselves for PECVD treatments. Herein the protocol for development of a MOF that was previously unstable to humid conditions is presented. The protocol describes the synthesis of Cu-BTC (also known as HKUST-1), the treatment of Cu-BTC with PECVD of perfluoroalkanes, the aging of materials under humid conditions, and the subsequent ammonia microbreakthrough experiments on milligram quantities of microporous materials. Cu-BTC has an extremely high surface area (~1,800 m(2)/g) when compared to most materials or surfaces that have been previously treated by PECVD methods. Parameters such as chamber pressure and treatment time are extremely important to ensure the perfluoroalkane plasma penetrates to and reacts with the inner MOF surfaces. Furthermore, the protocol for ammonia microbreakthrough experiments set forth here can be utilized for a variety of test gases and microporous materials.

  8. Unpredicted surface termination of α-Fe2O3(0001) film grown by mist chemical vapor deposition

    Science.gov (United States)

    Osaka, Shun; Kubo, Osamu; Takahashi, Kazuki; Oda, Masaya; Kaneko, Kentaro; Tabata, Hiroshi; Fujita, Shizuo; Katayama, Mitsuhiro

    2017-06-01

    We analyze the surface structure of an α-Fe2O3(0001) film grown on a c-plane sapphire substrate by mist chemical vapor deposition (CVD), which has been recently developed as a simple, safe, and cost-effective film growth method. Using coaxial impact-collision ion scattering spectroscopy, we found that the atomic-layer sequence of the surface termination of an α-Fe2O3(0001) film grown by mist CVD was Fe-O3-Fe- from the top layer. This surface termination is predicted to form in an oxygen-poor environment by density functional theory combined with a thermodynamical approach despite that the mist CVD process is performed with atmospheric-pressure air. The surface structure markedly changes after annealing above 600 °C in ultrahigh vacuum. We found that only a couple of layers from the top layer transform into Fe3O4(111) after 650 °C annealing, which would be so-called biphase reconstruction. Complete transformation into a Fe3O4(111) film occurs at 700 °C, whose atomic-layer sequence is determined to be Fe-O4-Fe3- from the top layer.

  9. A sub-atmospheric chemical vapor deposition process for deposition of oxide liner in high aspect ratio through silicon vias.

    Science.gov (United States)

    Lisker, Marco; Marschmeyer, Steffen; Kaynak, Mehmet; Tekin, Ibrahim

    2011-09-01

    The formation of a Through Silicon Via (TSV) includes a deep Si trench etching and the formation of an insulating layer along the high-aspect-ratio trench and the filling of a conductive material into the via hole. The isolation of the filling conductor from the silicon substrate becomes more important for higher frequencies due to the high coupling of the signal to the silicon. The importance of the oxide thickness on the via wall isolation can be verified using electromagnetic field simulators. To satisfy the needs on the Silicon dioxide deposition, a sub-atmospheric chemical vapor deposition (SA-CVD) process has been developed to deposit an isolation oxide to the walls of deep silicon trenches. The technique provides excellent step coverage of the 100 microm depth silicon trenches with the high aspect ratio of 20 and more. The developed technique allows covering the deep silicon trenches by oxide and makes the high isolation of TSVs from silicon substrate feasible which is the key factor for the performance of TSVs for mm-wave 3D packaging.

  10. Chemical Vapor Deposition of TaC/SiC on Graphite Tube and Its Ablation and Microstructure Studies

    Directory of Open Access Journals (Sweden)

    Suresh Kumar

    2017-07-01

    Full Text Available Tantalum carbide (TaC and silicon carbide (SiC layers were deposited on a graphite tube using a chemical vapor deposition process. Tantalum chloride (TaCl5 was synthesized in situ by reacting tantalum chips with chlorine at 550 °C. TaC was deposited by reacting TaCl5 with CH4 in the presence of H2 at 1050–1150 °C and 50–100 mbar. SiC was deposited at 1000 °C using methyl-tri-chloro-silane as a precursor at 50 mbar. At 1150 °C; the coating thickness was found to be about 600 μm, while at 1050 °C it was about 400 μm for the cumulative deposition time of 10 h. X-ray diffraction (XRD and X-ray Photo-Electron Spectroscopy (XPS studies confirmed the deposition of TaC and SiC and their phases. Ablation studies of the coated specimens were carried out under oxyacetylene flame up to 120 s. The coating was found to be intact without surface cracks and with negligible erosion. The oxide phase of TaC (TaO2 and Ta2O5 and the oxide phase of SiC (SiO2 were also found on the surface, which may have protected the substrate underneath from further oxidation.

  11. Enhanced mobility of Li-doped ZnO thin film transistors fabricated by mist chemical vapor deposition

    Energy Technology Data Exchange (ETDEWEB)

    Jeon, Hye-ji; Lee, Seul-Gi [Division of Materials Science and Engineering, Hanyang University, Seoul 133-719 (Korea, Republic of); Kim, H., E-mail: hkim_2@naver.com [Department of Materials Science and Engineering, Chungnam National University, 99 Daehak-ro, Yuseong-gu, Daejeon 305-764 (Korea, Republic of); Park, Jin-Seong, E-mail: jsparklime@hanyang.ac.kr [Division of Materials Science and Engineering, Hanyang University, Seoul 133-719 (Korea, Republic of)

    2014-05-01

    Highlights: • The mist CVD Li-doped ZnO film has changed from hexagonal to tetragonal structure depending on Li amounts. • The mobility of Li-doped ZnO film has improved about 10{sup 2} times higher than that of ZnO film by mist CVD. • The addition of Li into ZnO semiconductors may be the enhanced crystallinity and reduced defect states. - Abstract: Mist chemical vapor deposition (mist-CVD)-processed, lithium (Li)-doped ZnO thin film transistors (TFTs) are investigated. Li doping significantly increases the field-effect mobility in TFTs up to ∼100 times greater than that of undoped ZnO. The addition of Li into mist-CVD-grown ZnO semiconductors leads to improved film quality, which results from the enhanced crystallinity and reduced defect states, including oxygen vacancies. Our results suggest that Li doping of ZnO-based oxide semiconductors could serve as an effective strategy for high-performance, mist-CVD-processed oxide TFTs with low-cost and low-temperature fabrication.

  12. Controlling the resistivity gradient in aluminum-doped zinc oxide grown by plasma-enhanced chemical vapor deposition

    Science.gov (United States)

    Ponomarev, M. V.; Verheijen, M. A.; Keuning, W.; van de Sanden, M. C. M.; Creatore, M.

    2012-08-01

    Aluminum-doped ZnO (ZnO:Al) grown by chemical vapor deposition (CVD) generally exhibit a major drawback, i.e., a gradient in resistivity extending over a large range of film thickness. The present contribution addresses the plasma-enhanced CVD deposition of ZnO:Al layers by focusing on the control of the resistivity gradient and providing the solution towards thin (≤300 nm) ZnO:Al layers, exhibiting a resistivity value as low as 4 × 10-4 Ω cm. The approach chosen in this work is to enable the development of several ZnO:Al crystal orientations at the initial stages of the CVD-growth, which allow the formation of a densely packed structure exhibiting a grain size of 60-80 nm for a film thickness of 95 nm. By providing an insight into the growth of ZnO:Al layers, the present study allows exploring their application into several solar cell technologies.

  13. Fabrication of ZnO Thin-Film Transistors by Chemical Vapor Deposition Method using Zinc Acetate Solution

    Science.gov (United States)

    Alias, Afishah; Hazawa, Kouta; Kawashima, Nobuaki; Fukuda, Hisashi; Uesugi, Katsuhiro

    2011-01-01

    Zinc oxide (ZnO) thin-film transistors (TFTs) were fabricated by thermal chemical vapor deposition (CVD) using aqueous solutions of zinc acetate (ZnAc2) dihydrate as a source. The precursor was supplied to the substrate by the nitrogen bubbling method through a plate with numerous orifices in the ZnAc2 solution. The ZnO thin films were grown on silicon substrates in the growth temperature (TG) range from 280 to 700 °C. The growth rate of ZnO thin films were linearly proportional to the growth temperature, which suggested that the growth rate is limited by the decomposition of ZnAc2. Depletion-mode TFTs with the ZnO film grown at TG = 350 °C was found to exhibit a relatively low saturation mobility (µsat). However, µsat increased from 1 to 14 cm2·V-1·s-1 and the operational mode was changed from the depletion mode to the enhancement mode by annealing treatment at 200 °C for 2 h under N2 ambient.

  14. Recent Progress in the Growth of Mid-Infrared Emitters by Metal-Organic Chemical Vapor Deposition

    Energy Technology Data Exchange (ETDEWEB)

    Biefeld, R.M.; Allerman, A.A.; Kurtz, S.R.; Baucom, K.C.

    1998-01-01

    We report on recent progress and improvements in the metal-organic chemical vapor deposition (MOCVD) growth of mid-infrared lasers and using a high speed rotating disk reactor (RDR). The devices contain AlAsSb active regions. These lasers have multi-stage, type I InAsSb/InAsP quantum well active regions. A semi-metal GaAsSb/InAs layer acts as an internal electron source for the multi-stage injection lasers and AlAsSb is an electron confinement layer. These structures are the first MOCVD multi-stage devices. Growth in an RDR was necessary to avoid the previously observed Al memory effects found in conventional horizontal reactors. A single stage, optically pumped laser yielded improved power (greater than 650 mW/facet) at 80K and 3.8um. A multi-stage 3.8-3.9um laser structure operated up to T=170K. At 80K, peak power greater than 100mW and a high slope- efficiency were observed in gain guided lasers.

  15. Atomic-layer chemical-vapor-deposition of TiN thin films on Si(100) and Si(111)

    CERN Document Server

    Kim, Y S; Kim, Y D; Kim, W M

    2000-01-01

    An atomic-layer chemical vapor deposition (AL-CVD) system was used to deposit TiN thin films on Si(100) and Si(111) substrates by cyclic exposures of TiCl sub 4 and NH sub 3. The growth rate was measured by using the number of deposition cycles, and the physical properties were compared with those of TiN films grown by using conventional deposition methods. To investigate the growth mechanism, we suggest a growth model for TiN n order to calculate the growth rate per cycle with a Cerius program. The results of the calculation with the model were compared with the experimental values for the TiN film deposited using the AL-CVD method. The stoichiometry of the TiN film was examined by using Auger electron spectroscopy, and the chlorine and the oxygen impurities were examined. The x-ray diffraction and the transmission electron microscopy results for the TiN film exhibited a strong (200) peak and a randomly oriented columnar microstructure. The electrical resistivity was found to decrease with increasing deposit...

  16. Influence of stoichiometry on the optical and electrical properties of chemical vapor deposition derived MoS2.

    Science.gov (United States)

    Kim, In Soo; Sangwan, Vinod K; Jariwala, Deep; Wood, Joshua D; Park, Spencer; Chen, Kan-Sheng; Shi, Fengyuan; Ruiz-Zepeda, Francisco; Ponce, Arturo; Jose-Yacaman, Miguel; Dravid, Vinayak P; Marks, Tobin J; Hersam, Mark C; Lauhon, Lincoln J

    2014-10-28

    Ultrathin transition metal dichalcogenides (TMDCs) of Mo and W show great potential for digital electronics and optoelectronic applications. Whereas early studies were limited to mechanically exfoliated flakes, the large-area synthesis of 2D TMDCs has now been realized by chemical vapor deposition (CVD) based on a sulfurization reaction. The optoelectronic properties of CVD grown monolayer MoS2 have been intensively investigated, but the influence of stoichiometry on the electrical and optical properties has been largely overlooked. Here we systematically vary the stoichiometry of monolayer MoS2 during CVD via controlled sulfurization and investigate the associated changes in photoluminescence and electrical properties. X-ray photoelectron spectroscopy is employed to measure relative variations in stoichiometry and the persistence of MoOx species. As MoS2-δ is reduced (increasing δ), the field-effect mobility of monolayer transistors increases while the photoluminescence yield becomes nonuniform. Devices fabricated from monolayers with the lowest sulfur content have negligible hysteresis and a threshold voltage of ∼ 0 V. We conclude that the electrical and optical properties of monolayer MoS2 crystals can be tuned via stoichiometry engineering to meet the requirements of various applications.

  17. On the possibility to grow zinc oxide-based transparent conducting oxide films by hot-wire chemical vapor deposition

    Energy Technology Data Exchange (ETDEWEB)

    Abrutis, Adulfas, E-mail: adulfas.abrutis@chf.vu.lt; Silimavicus, Laimis; Kubilius, Virgaudas; Murauskas, Tomas; Saltyte, Zita; Kuprenaite, Sabina; Plausinaitiene, Valentina [Faculty of Chemistry, Vilnius University, Naugarduko 24, LT-03225 Vilnius (Lithuania)

    2014-03-15

    Hot-wire chemical vapor deposition (HW-CVD) was applied to grow zinc oxide (ZnO)-based transparent conducting oxide (TCO) films. Indium (In)-doped ZnO films were deposited using a cold wall pulsed liquid injection CVD system with three nichrome wires installed at a distance of 2 cm from the substrate holder. The wires were heated by an AC current in the range of 0–10 A. Zn and In 2,2,6,6-tetramethyl-3,5-heptanedionates dissolved in 1,2-dimethoxyethane were used as precursors. The hot wires had a marked effect on the growth rates of ZnO, In-doped ZnO, and In{sub 2}O{sub 3} films; at a current of 6–10 A, growth rates were increased by a factor of ≈10–20 compared with those of traditional CVD at the same substrate temperature (400 °C). In-doped ZnO films with thickness of ≈150 nm deposited on sapphire-R grown at a wire current of 9 A exhibited a resistivity of ≈2 × 10{sup −3} Ωcm and transparency of >90% in the visible spectral range. These initial results reveal the potential of HW-CVD for the growth of TCOs.

  18. Tantalum coating on porous Ti6Al4V scaffold using chemical vapor deposition and preliminary biological evaluation.

    Science.gov (United States)

    Li, Xiang; Wang, Lin; Yu, Xiaoming; Feng, Yafei; Wang, Chengtao; Yang, Ke; Su, Daniel

    2013-07-01

    Porous tantalum (Ta), produced via chemical vapor deposition (CVD) of commercially pure Ta onto a vitreous carbon, is currently available for use in orthopedic applications. However, the relatively high manufacturing cost and the incapability to produce customized implant using medical image data have limited its application to gain widespread acceptance. In this study, Ta film was deposited on porous Ti6Al4V scaffolds using CVD technique. Digital microscopy and scanning electron microscopy indicated that the Ta coating evenly covered the entire scaffold structure. X-ray diffraction analysis showed that the coating consisted of α and β phases of Ta. Goat mesenchymal stem cells were seeded and cultured on the Ti6Al4V scaffolds with and without coating. The tetrazolium-based colorimetric assay exhibited better cell adhesion and proliferation on Ta-coated scaffolds compared with uncoated scaffolds. The porous scaffolds were subsequently implanted in goats for 12weeks. Histological analysis revealed similar bone formation around the periphery of the coated and uncoated implants, but bone ingrowth is better within the Ta-coated scaffolds. To demonstrate the ability of producing custom implant for clinical applications via this technology, we designed and fabricated a porous Ti6Al4V scaffold with segmental mandibular shape derived from patient computerized tomography data. Copyright © 2013 Elsevier B.V. All rights reserved.

  19. Rapid assessment of mid-infrared refractive index anisotropy using a prism coupler: chemical vapor deposited ZnS.

    Science.gov (United States)

    Qiao, H A; Lipschultz, Kristen A; Anheier, N C; McCloy, J S

    2012-05-01

    A state-of-the-art mid-infrared prism coupler was used to study suspected anisotropy in the refractive index of forward-looking-infrared grade chemical vapor deposited (CVD) zinc sulfide. Samples were prepared with columnar grain structure in and perpendicular to the sample plane, as well as from different depths in the CVD growth body. This study was motivated by the growing industry concern among optical design engineers, as well as developers of mid-infrared systems, over the reliability of historically accepted index data. Prior photoluminescence and x-ray diffraction measurements have suggested that refractive index may vary according to sample orientation with respect to the grain structure. Measurements were conducted to provide optical dispersion and thermal index (dn/dT) data at discrete laser wavelengths between 0.633 and 10.591 μm at two temperature set points (30 °C and 90 °C). Refractive index measurements between samples exhibited an average standard deviation comparable to the uncertainty of the prism coupler measurement (0.0004 refractive index units), suggesting that the variation in refractive index as a function of sample orientation and CVD deposition time is negligible and should have no impact on subsequent optical designs. Measured dispersion data at mid-infrared wavelengths were also found to agree well with prior published measurements.

  20. Probing electronic lifetimes and phonon anharmonicities in high-quality chemical vapor deposited graphene by magneto-Raman spectroscopy

    Energy Technology Data Exchange (ETDEWEB)

    Neumann, Christoph, E-mail: cneumann@physik.rwth-aachen.de; Stampfer, Christoph [JARA-FIT and 2nd Institute of Physics, RWTH Aachen University, 52074 Aachen (Germany); Peter Grünberg Institute (PGI-9), Forschungszentrum Jülich, 52425 Jülich (Germany); Halpaap, Donatus; Banszerus, Luca; Schmitz, Michael; Beschoten, Bernd [JARA-FIT and 2nd Institute of Physics, RWTH Aachen University, 52074 Aachen (Germany); Reichardt, Sven [JARA-FIT and 2nd Institute of Physics, RWTH Aachen University, 52074 Aachen (Germany); Physics and Materials Science Research Unit, Université du Luxembourg, 1511 Luxembourg (Luxembourg); Watanabe, Kenji; Taniguchi, Takashi [National Institute for Materials Science, 1-1 Namiki, Tsukuba 305-0044 (Japan)

    2015-12-07

    We present a magneto-Raman study on high-quality single-layer graphene grown by chemical vapor deposition (CVD) that is fully encapsulated in hexagonal boron nitride by a dry transfer technique. By analyzing the Raman D, G, and 2D peaks, we find that the structural quality of the samples is comparable with state-of-the-art exfoliated graphene flakes. From B-field dependent Raman measurements, we extract the broadening and associated lifetime of the G peak due to anharmonic effects. Furthermore, we determine the decay width and lifetime of Landau level (LL) transitions from magneto-phonon resonances as a function of laser power. At low laser power, we find a minimal decay width of 140 cm{sup −1} highlighting the high electronic quality of the CVD-grown graphene. At higher laser power, we observe an increase of the LL decay width leading to a saturation, with the corresponding lifetime saturating at a minimal value of 18 fs.

  1. Structural, optical and electrical study of undoped GaN layers obtained by metalorganic chemical vapor deposition on sapphire substrates

    Energy Technology Data Exchange (ETDEWEB)

    Rangel-Kuoppa, Victor-Tapio, E-mail: tapio.rangel@gmail.co [Institute of Semiconductor and Solid State Physics, Johannes Kepler Universitaet, A-4040 Linz (Austria); Aguilar, Cesia Guarneros [Seccion de Electronica del Estado Solido, Departamento de Ingenieria Electrica, Centro de Investigacion y de Estudios Avanzados del Instituto Politecnico Nacional, A.P. 14740, C.P. 07360, Mexico, Distrito Federal (Mexico); Sanchez-Resendiz, Victor, E-mail: victors@sees.cinvestav.m [Seccion de Electronica del Estado Solido, Departamento de Ingenieria Electrica, Centro de Investigacion y de Estudios Avanzados del Instituto Politecnico Nacional, A.P. 14740, C.P. 07360, Mexico, Distrito Federal (Mexico)

    2011-01-31

    We investigate optical, structural and electrical properties of undoped GaN grown on sapphire. The layers were prepared in a horizontal reactor by low pressure metal organic chemical vapor deposition at temperatures of 900 {sup o}C and 950 {sup o}C on a low temperature grown (520 {sup o}C) GaN buffer layer on (0001) sapphire substrate. The growth pressure was kept at 10,132 Pa. The photoluminescence study of such layers revealed a band-to-band emission around 366 nm and a yellow band around 550 nm. The yellow band intensity decreases with increasing deposition temperature. X-ray diffraction, atomic force microscopy and scanning electron microscopy studies show the formation of hexagonal GaN layers with a thickness of around 1 {mu}m. The electrical study was performed using temperature dependent Hall measurements between 35 and 373 K. Two activation energies are obtained from the temperature dependent conductivity, one smaller than 1 meV and the other one around 20 meV. For the samples grown at 900 {sup o}C the mobilities are constant around 10 and 20 cm{sup 2} V{sup -1} s{sup -1}, while for the sample grown at 950 {sup o}C the mobility shows a thermally activated behavior with an activation energy of 2.15 meV.

  2. Effect of Mo concentration on shape and size of monolayer MoS2 crystals by chemical vapor deposition

    Science.gov (United States)

    Wang, Wenzhao; Zeng, Xiangbin; Wu, Shaoxiong; Zeng, Yang; Hu, Yishuo; Ding, Jia; Xu, Sue

    2017-10-01

    Monolayer molybdenum disulfide (MoS2), a new two-dimensional direct-bandgap semiconductor, has attracted research interests into applications in atomically thin electronics and optoelectronics. Growing monolayer MoS2 film by chemical vapor deposition is the most commonly used approach. Little is known, however, about the cause of the shape and size evolution. Here, we explore how the precursor’s concentration affects the MoS2 crystals’ shape and size. When S concentration is stable, the shape of the MoS2 domain evolves from triangle to hexagon and then truncated triangle, finally back to a triangle as the concentration of Mo elevates. Regulating the concentration of Mo leads to the controllable growth of MoS2 crystal. By controlling the concentration of Mo, we eventually synthesized over 100 µm monolayer MoS2 crystals. Our results are a significant step forward in realizing the ultimate promise of large atomic MoS2 monolayer crystals for flexible, electronic, optoelectronic devices.

  3. Catalytic Chemical Vapor Deposition of Methane to Carbon Nanotubes: Copper Promoted Effect of Ni/MgO Catalysts

    Directory of Open Access Journals (Sweden)

    Wen Yang

    2014-01-01

    Full Text Available The Ni/MgO and Ni-Cu/MgO catalysts were prepared by sol-gel method and used as the catalysts for synthesis of carbon nanotubes by thermal chemical vapor deposition. The effect of Cu on the carbon yield and structure was investigated, and the effects of calcination temperature and reaction temperature were also investigated. The catalysts and synthesized carbon materials were characterized by temperature programmed reduction (TPR, thermogravimetric analysis (TGA, and scanning electron microscopy (SEM. Results showed that the addition of Cu promoted the reduction of nickel species, subsequently improving the growth and yield of CNTs. Meanwhile, CNTs were synthesized by the Ni/MgO and Ni-Cu/MgO catalysts with various calcination temperatures and reaction temperatures, and results suggested that the obtained CNTs on Ni-Cu/MgO catalyst with the calcination temperature of 500°C and the reaction temperature of 650°C were of the greatest yield and quantity of 927%.

  4. Defect structure of metal-organic chemical vapor deposition-grown epitaxial (0001) GaN/Al2O3

    Science.gov (United States)

    Wu, X. H.; Brown, L. M.; Kapolnek, D.; Keller, S.; Keller, B.; DenBaars, S. P.; Speck, J. S.

    1996-09-01

    Defect structures were investigated by transmission electron microscopy for GaN/Al2O3 (0001) epilayers grown by metal-organic chemical vapor deposition using a two-step process. The defect structures, including threading dislocations, partial dislocation bounding stacking faults, and inversion domains, were analyzed by diffraction contrast, high-resolution imaging, and convergent beam diffraction. GaN film growth was initiated at 600 °C with a nominal 20 nm nucleation layer. This was followed by high-temperature growth at 1080 °C. The near-interfacial region of the films consists of a mixture of cubic and hexagonal GaN, which is characterized by a high density of stacking faults bounded by Shockley and Frank partial dislocations. The near-interfacial region shows a high density of inversion domains. Above ˜0.5 μm thickness, the film consists of isolated threading dislocations of either pure edge, mixed, or pure screw character with a total density of ˜7×108 cm-2. The threading dislocation reduction in these films is associated with cubic to hexagonal transformation of the nucleation layer region during high temperature growth.

  5. Facile Route to the Controlled Synthesis of Tetragonal and Orthorhombic SnO2 Films by Mist Chemical Vapor Deposition.

    Science.gov (United States)

    Bae, Jae-Yoon; Park, Jozeph; Kim, Hyun You; Kim, Hyun-Suk; Park, Jin-Seong

    2015-06-10

    Two types of tin dioxide (SnO2) films were grown by mist chemical vapor deposition (Mist-CVD), and their electrical properties were studied. A tetragonal phase is obtained when methanol is used as the solvent, while an orthorhombic structure is formed with acetone. The two phases of SnO2 exhibit different electrical properties. Tetragonal SnO2 behaves as a semiconductor, and thin-film transistors (TFTs) incorporating this material as the active layer exhibit n-type characteristics with typical field-effect mobility (μ(FE)) values of approximately 3-4 cm(2)/(V s). On the other hand, orthorhombic SnO2 is found to behave as a metal-like transparent conductive oxide. Density functional theory calculations reveal that orthorhombic SnO2 is more stable under oxygen-rich conditions, which correlates well with the experimentally observed solvent effects. The present study paves the way for the controlled synthesis of functional materials by atmospheric pressure growth techniques.

  6. A Citizen's Guide to Vapor Intrusion Mitigation

    Science.gov (United States)

    This guide describes how vapor intrusion is the movement of chemical vapors from contaminated soil and groundwater into nearby buildings.Vapors primarily enter through openings in the building foundation or basement walls.

  7. Isothermal Reactor for Continuous Flow Microwave-Assisted Chemical Reaction

    Science.gov (United States)

    Matsuzawa, Mitsuhiro; Togashi, Shigenori; Hasebe, Shinji

    An isothermal reactor in which reaction solutions can be controlled at constant temperature under constant microwave irradiation was developed. This is useful for investigating microwave effects on chemical reactions that are not observed under conventional heating conditions. We devised a structure in which a heat-transfer medium with a low dielectric loss factor, which hardly absorbs any microwaves, flowed outside a spiral reaction tube and designed the basic structure of the reactor using electromagnetic simulation to optimize the energy absorption rate. The conditions for increasing the temperature controlling ability of the reactor were also investigated theoretically and experimentally by taking into consideration the influences of three elements: the velocity of the internal fluid, the material for the tube, and the velocity of the external fluid. The velocity of the external fluid had the greatest influence on temperature controlling ability and the material for the tube had the least influence under the experimental conditions. The overall heat transfer coefficient was about 3.9×102 W/(m2·K) when water flowed through the quartz reaction tube at 7.1 mm/s and the external fluid flowed outside the tube at 44 mm/s. We also tested and confirmed that the temperature of water used as internal fluid could be controlled to within ±1.5 K at 309.3 K when microwaves at 26 W were irradiated into the reactor, whereas the temperature of water was over 373 K and boiled without the heat-transfer medium flowing outside the reaction tube using a conventional method of microwave heating. In addition, we investigated microwave effects on Suzuki-Miyaura coupling reaction using the developed isothermal reactor and we confirmed that the temperatures were controlled well in the reactor. The yields obtained by microwave heating were almost the same as that obtained by oil-bath heating.

  8. Microspectroscopic imaging of solution plasma: How do its physical properties and chemical species evolve in atmospheric-pressure water vapor bubbles?

    Science.gov (United States)

    Yui, Hiroharu; Banno, Motohiro

    2018-01-01

    In this article, we review the development of scientific instruments for obtaining information on the evolution of physical properties and chemical species of solution plasma (SP). When a pulsed high voltage is applied between electrodes immersed in an aqueous solution, SP is formed in water vapor bubbles transiently generated in the solution under atmospheric pressure. To clarify how SP emerges in water vapor bubbles and is sustained in solutions, an instrument with micrometer spatial resolution and nanosecond temporal resolution is required. To meet these requirements, a microscopic system with a custom-made optical discharge cell was newly developed, where the working distance between the SP and the microscopic objective lens was minimized. A hollow electrode equipped in the discharge cell also enabled us to control the chemical composition in water vapor bubbles. To study the spatial and temporal evolutions of chemical species in micrometer and nano- to microsecond regions, a streak camera with a spectrometer and a CCD detector with a time-gated electronic device were combined with the microscope system. The developed instrument is expected to contribute to providing a new means of developing new schemes for chemical reactions and material syntheses.

  9. Chemical, Structural, and Microstructural Changes in Metallic and Silicon-Based Coating Materials Exposed to Iodine Vapor

    Science.gov (United States)

    Costa, Gustavo C. C.; Benavides, Gabriel F.; Smith, Timothy D.

    2017-01-01

    The chemical, structural and microstructural behavior of steels (304, 316 and A36), titanium-aluminum alloy (Ti-Al, (6Al-4V)), aluminum-magnesium alloy (Al-Mg, 6061), and coatings (Silcolloy and Dursan (SilcoTek Corporation)) were probed after exposure to iodine laminar flow. Exposures were carried out in a custom-built Iodine Vapor RIG (IVR) at 300 degrees C to an iodine laminar vapor flow of 1 mg min(exp. -1), carried by 145 mL-min(exp. -1) argon gas, for 5, 15 and 30 days. Samples were characterized before and after the experiment by gravimetric analysis, X-ray diffraction (XRD) and cross section electron microscopy analysis coupled with energy dispersive X-ray spectroscopy (EDS). All steels exposed for 30 days formed scales consisting mainly of metal (Cr, Fe, Ni) oxides showing different chemistry, microstructure and crystalline phases. Elemental iodine was only detected by EDS analysis in the scales of stainless steels 304 and 316. After 30 days, the Ti-Al exhibited no detectable scale, suggesting only a very thin film was formed. A scale consisting mainly of aluminum, iodine, and oxygen formed on the Al-Mg sample exposed to 30 days. Some pockets rich in magnesium, iodine and oxygen also formed in this Al-Mg alloy. Stainless steel 316, low carbon steel A36 and Ti-Al alloy coated with Silcolloy and stainless steel 304 coated with Dursan that were exposed for 30 days exhibited no oxidation. Stainless steel 304 coated with Silcolloy exposed for 30 days did not exhibit corrosion although the sample gained weight and the coating exhibited expansion. The weight gain per area performance of the materials exposed in iodine lamina flow containing oxygen at impurity level for 10, 15 and 30 days are reported from the lowest to the highest weight gain per area as follows: Steels: Less than 316 less than 304 less than A36; Ti-Al-Mg based alloys: Al-Mg less than Ti-Al: Considering the experimental uncertainties, no weight change was observed for Stainless steel 316, low

  10. Effect of anatomical characteristics and chemical components on microwave-assisted liquefaction of bamboo wastes

    Science.gov (United States)

    JiuLong Xie; XingYan Huang; JinQiu Qi; Chung Hse; Todd Shupe

    2014-01-01

    The epidermis layer waste (ELW) and the inner layer waste (ILW) were removed from Phyllostachys pubescens bamboo, and the anatomical characteristics and chemical components of these wastes were comparatively investigated. Both the ELW and the ILW were subjected to a microwave-assisted liquefaction process to evaluate the relationship between bamboo...

  11. Heat and Mass Transfer in the Chemical Vapor Deposition of Silicon Carbide in a Porous Carbon-Carbon Composite Material for a Heat Shield

    Science.gov (United States)

    Reznik, S. V.; Mikhailovskii, K. V.; Prosuntsov, P. V.

    2017-03-01

    Physical and mathematical simulations of the chemical vapor deposition of silicon carbide in a porous carbon-carbon composite material in a chemical vapor deposition reactor for formation of a matrix of a carbon-ceramic composite material for a heat shield of an aerospace aircraft have been performed. Results of parametric calculations of the heat and mass transfer at the macro- and microlevels in representative elements of the microstructure of carbon-carbon composite materials different in residual porosity at different temperatures in the reaction zone of the reactor are presented. Features of compaction of the pore space of a carbon-carbon composite material by a silicon-carbide matrix depending on the technological parameters of the reaction medium were analyzed.

  12. Improving mechanical robustness of ultralow-k SiOCH plasma enhanced chemical vapor deposition glasses by controlled porogen decomposition prior to UV-hardening

    OpenAIRE

    Urbanowicz, Adam; Vanstreels, Kris; Verdonck,Patrick; Shamiryan, Denis; De Gendt, Stefan; Baklanov, Mikhail

    2010-01-01

    We report a new curing procedure of a plasma enhanced chemical vapor deposited SiCOH glasses for interlayer dielectric applications in microelectronic. It is demonstrated that SiOCH glasses with improved mechanical properties and ultralow dielectric constant can be obtained by controlled decomposition of the porogen molecules used to create nanoscale pores, prior to the UV-hardening step. The Young’s modulus (YM) of conventional SiOCH-based glasses with 32% open porosity hardened with porogen...

  13. CATALYTIC EFFECTS OF FERROCENE ON BONDING, OPTICAL AND STRUCTURAL PROPERTIES OF DIAMOND-LIKE CARBON FILMS DEPOSITED BY MICROWAVE SURFACE-WAVE PLASMA CHEMICAL VAPOR DEPOSITION

    OpenAIRE

    SUDIP ADHIKARI; SUNIL ADHIKARY; HIDEO UCHIDA; MASAYOSHI UMENO

    2006-01-01

    This paper reports catalytic effects of ferrocene on bonding, optical and structural properties of diamond-like carbon (DLC) thin films grown on silicon and quartz substrates by microwave surface-wave plasma chemical vapor deposition. For film deposition, helium and methane gases were used as plasma source. Bonding, optical and structural properties of the DLC films were measured both with and without using ferrocene as a catalyst. The ferrocene content in the DLC was confirmed by X-ray spect...

  14. Dependence of optical property on the defects in Si-doped GaN grown by metal organic chemical vapor deposition

    CERN Document Server

    Kim, C K; Yi, J H; Choi, Y H; Yoo, T K; Hong, C H

    1999-01-01

    We investigated dependence of optical property on the microstructures and defects for Si-doped GaN grown by metal organic chemical vapor deposition using photoluminescence and x-ray diffraction measurements. Radiative transitions at different wavelengths were observed to be related to the different type of microstructure which can be characterized by x-ray diffraction measurements. Attempts were made to explain the relation between optical property and microstructures.

  15. Investigation of Boron Thermal Diffusion from Atmospheric Pressure Chemical Vapor Deposited Boron Silicate Glass for N-Type Solar Cell Process Application

    OpenAIRE

    Ikuo Kurachi; Kentaro Yoshioka

    2016-01-01

    An atmospheric pressure chemical vapor deposition (AP-CVD) system has been newly developed for boron silicate glass (BSG) film deposition dedicating to solar cell manufacturing. Using the system, thermal boron diffusion from the BSG film is investigated and confirmed in terms of process stability for surface property before BSG deposition and BSG thickness. No degradation in carrier lifetime is also confirmed. A boron diffusion simulator has been newly developed and demonstrated for optimizat...

  16. Fundamental studies of the chemical vapor deposition of diamond. Final technical report, April 1, 1988--December 31, 1994

    Energy Technology Data Exchange (ETDEWEB)

    Nix, W.D.

    1995-05-01

    We submit here a final technical report for the research program entitled: Fundamental Studies of the Chemical Vapor Deposition of Diamond, DOE Grant No. DE-FG05-88ER45345-M006. This research program was initiated in 1988 under the direction of the late Professor David A. Stevenson and was renewed in 1992. Unfortunately, at the end of 1992, just as the last phase of this work was getting underway, Professor Stevenson learned that he had developed mesothelioma, a form of cancer based on asbestos. Professor Stevenson died from that disease in February of 1994. Professor William D. Nix, the Chairman of the Materials Science department at Stanford was named the Principal Investigator. Professor Nix has assembled this final technical report. Much of the work of this grant was conducted by Mr. Paul Dennig, a graduate student who will receive his Ph.D. degree from Stanford in a few months. His research findings are described in the chapters of this report and in the papers published over the past few years. The main discovery of this work was that surface topology plays a crucial role in the nucleation of diamond on silicon. Dennig and his collaborators demonstrated this by showing that diamond nucleates preferentially at the tips of asperities on a silicon surface rather than in the re-entrant comers at the base of such asperities. Some of the possible reasons for this effect are described in this report. The published papers listed on the next page of this report also describe this research. Interested persons can obtain copies of these papers from Professor Nix at Stanford. A full account of all of the research results obtained in this work is given in the regular chapters that follow this brief introduction. In addition, interested readers will want to consult Mr. Dennig`s Ph.D. dissertation when it is made available later this year.

  17. Control of the nucleation and quality of graphene grown by low-pressure chemical vapor deposition with acetylene

    Energy Technology Data Exchange (ETDEWEB)

    Yang, Meng, E-mail: youmou@rift.mech.tohoku.ac.jp [Department of Nanomechanics, Graduate School of Engineering, Tohoku University, Sendai 980-8579 (Japan); Sasaki, Shinichirou [Department of Nanomechanics, Graduate School of Engineering, Tohoku University, Sendai 980-8579 (Japan); Suzuki, Ken; Miura, Hideo [Fracture and Reliability Research Institute, Tohoku University, Sendai 980-8579 (Japan)

    2016-03-15

    Graphical abstract: - Highlights: • For the first time, we succeeded in the LPCVD growth of monolayer graphene using acetylene as the precursor gas. • The growth rate is very high when acetylene is used as the source gas. Our process has exhibited the potential to shorten the growth time of CVD graphene. • We found that the domain size, defects density, layer number and the sheet resistance of graphene can be changed by changing the acetylene flow rates. • We found that it is also possible to form bilayer graphene using acetylene. However, further study are necessary to reduce the defects density. - Abstract: Although many studies have reported the chemical vapor deposition (CVD) growth of large-area monolayer graphene from methane, synthesis of graphene using acetylene as the source gas has not been fully explored. In this study, the low-pressure CVD (LPCVD) growth of graphene from acetylene was systematically investigated. We succeeded in regulating the domain size, defects density, layer number and the sheet resistance of graphene by changing the acetylene flow rates. Scanning electron microscopy and Raman spectroscopy were employed to confirm the layer number, uniformity and quality of the graphene films. It is found that a low flow rate of acetylene (0.28 sccm) is required to form high-quality monolayer graphene in our system. On the other hand, the high acetylene flow rate (7 sccm) will induce the growth of the bilayer graphene domains with high defects density. On the basis of selected area electron diffraction (SAED) pattern, the as-grown monolayer graphene domains were analyzed to be polycrystal. We also discussed the relation between the sheet resistacne and defects density in graphene. Our results provide great insights into the understanding of the CVD growth of monolayer and bilayer graphene from acetylene.

  18. Transport properties of the top and bottom surfaces in monolayer MoS2 grown by chemical vapor deposition.

    Science.gov (United States)

    Kurabayashi, S; Nagashio, K

    2017-09-14

    The advantage of MoS2, compared with graphene, is the direct growth on various oxide substrates by chemical vapor deposition (CVD) without utilizing catalytic metal substrates, which facilitates practical applications for electronics. The carrier mobility is, however, degraded from the intrinsic limit mainly due to short-range scattering caused by S vacancies formed during CVD growth. If the upper limit for the crystallinity of CVD-MoS2 on oxide substrates is determined by the MoS2/substrate interaction during growth, it will hinder the advantage. In this study, we investigated the interaction between monolayer MoS2 and a SiO2/Si substrate and the difference in crystallinity between the top and bottom S surfaces due to the MoS2/substrate interaction. Raman and photoluminescence spectroscopy indicated that doping and strain were induced in MoS2 from the substrate, but they could be removed by transferring MoS2 to a new substrate using polymers. The newly developed polymer-transfer technique enabled selective transfer of the bottom or top surface of CVD-MoS2 onto a new SiO2/Si substrate. The metal-insulator transition was clearly observed for both the normal and inverse transfers, suggesting that the crystallinity of CVD-MoS2 is high and that the crystallinity of the bottom surface interacting with the substrate was similar to that of the top free surface. These results provide positive prospects for the further improvement of the crystallinity of MoS2 on oxide substrates by reconsidering the growth conditions.

  19. Robofurnace: A semi-automated laboratory chemical vapor deposition system for high-throughput nanomaterial synthesis and process discovery

    Energy Technology Data Exchange (ETDEWEB)

    Oliver, C. Ryan; Westrick, William; Koehler, Jeremy; Brieland-Shoultz, Anna; Anagnostopoulos-Politis, Ilias; Cruz-Gonzalez, Tizoc [Department of Mechanical Engineering, University of Michigan, Ann Arbor, Michigan 48109 (United States); Hart, A. John, E-mail: ajhart@mit.edu [Department of Mechanical Engineering, University of Michigan, Ann Arbor, Michigan 48109 (United States); Department of Mechanical Engineering, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139 (United States)

    2013-11-15

    Laboratory research and development on new materials, such as nanostructured thin films, often utilizes manual equipment such as tube furnaces due to its relatively low cost and ease of setup. However, these systems can be prone to inconsistent outcomes due to variations in standard operating procedures and limitations in performance such as heating and cooling rates restrict the parameter space that can be explored. Perhaps more importantly, maximization of research throughput and the successful and efficient translation of materials processing knowledge to production-scale systems, relies on the attainment of consistent outcomes. In response to this need, we present a semi-automated lab-scale chemical vapor deposition (CVD) furnace system, called “Robofurnace.” Robofurnace is an automated CVD system built around a standard tube furnace, which automates sample insertion and removal and uses motion of the furnace to achieve rapid heating and cooling. The system has a 10-sample magazine and motorized transfer arm, which isolates the samples from the lab atmosphere and enables highly repeatable placement of the sample within the tube. The system is designed to enable continuous operation of the CVD reactor, with asynchronous loading/unloading of samples. To demonstrate its performance, Robofurnace is used to develop a rapid CVD recipe for carbon nanotube (CNT) forest growth, achieving a 10-fold improvement in CNT forest mass density compared to a benchmark recipe using a manual tube furnace. In the long run, multiple systems like Robofurnace may be linked to share data among laboratories by methods such as Twitter. Our hope is Robofurnace and like automation will enable machine learning to optimize and discover relationships in complex material synthesis processes.

  20. Dislocation confinement in the growth of Na flux GaN on metalorganic chemical vapor deposition-GaN

    Science.gov (United States)

    Takeuchi, S.; Asazu, H.; Imanishi, M.; Nakamura, Y.; Imade, M.; Mori, Y.; Sakai, A.

    2015-12-01

    We have demonstrated a GaN growth technique in the Na flux method to confine c-, (a+c)-, and a-type dislocations around the interface between a Na flux GaN crystal and a GaN layer grown by metalorganic chemical vapor deposition (MOCVD) on a (0001) sapphire substrate. Transmission electron microscopy (TEM) clearly revealed detailed interface structures and dislocation behaviors that reduced the density of vertically aligned dislocations threading to the Na flux GaN surface. Submicron-scale voids were formed at the interface above the dislocations with a c component in MOCVD-GaN, while no such voids were formed above the a-type dislocations. The penetration of the dislocations with a c component into Na flux GaN was, in most cases, effectively blocked by the presence of the voids. Although some dislocations with a c component in the MOCVD-GaN penetrated into the Na flux GaN, their propagation direction changed laterally through the voids. On the other hand, the a-type dislocations propagated laterally and collectively near the interface, when these dislocations in the MOCVD-GaN penetrated into the Na flux GaN. These results indicated that the dislocation propagation behavior was highly sensitive to the type of dislocation, but all types of dislocations were confined to within several micrometers region of the Na flux GaN from the interface. The cause of void formation, the role of voids in controlling the dislocation behavior, and the mechanism of lateral and collective dislocation propagation are discussed on the basis of TEM results.