Sample records for arsenides

  1. Gallium Arsenide Photocathode Development (United States)


    r ~\\ 1 1 AD-A018 619 ■ i I 1 GALLIUM ARSENIDE PHOTOCATHODE DEVELOPMENT I Terry Roach, et al 1 1 ■f EPSCO ...aiwiiwnHWlffl’Wip m, «swwerf^MW^S’ GALLIUM ARSENIDE PHOTOCATHODE DEVELOPMENT T. J. Roach Bianca Contractor: EPSCO Laboratories Contract Number: F08606...PHOTOCATHODE DEVELOPMENT 7. AUTHORfaJ T. Roach J. Bianca t. PERFORMING ORGANIZATION NAME AND AOORESS EPSCO Laboratories 227 High Ridge Road Stauford CT

  2. Spin Injection in Indium Arsenide

    Directory of Open Access Journals (Sweden)

    Mark eJohnson


    Full Text Available In a two dimensional electron system (2DES, coherent spin precession of a ballistic spin polarized current, controlled by the Rashba spin orbit interaction, is a remarkable phenomenon that’s been observed only recently. Datta and Das predicted this precession would manifest as an oscillation in the source-drain conductance of the channel in a spin-injected field effect transistor (Spin FET. The indium arsenide single quantum well materials system has proven to be ideal for experimental confirmation. The 2DES carriers have high mobility, low sheet resistance, and high spin orbit interaction. Techniques for electrical injection and detection of spin polarized carriers were developed over the last two decades. Adapting the proposed Spin FET to the Johnson-Silsbee nonlocal geometry was a key to the first experimental demonstration of gate voltage controlled coherent spin precession. More recently, a new technique measured the oscillation as a function of channel length. This article gives an overview of the experimental phenomenology of the spin injection technique. We then review details of the application of the technique to InAs single quantum well (SQW devices. The effective magnetic field associated with Rashba spin-orbit coupling is described, and a heuristic model of coherent spin precession is presented. The two successful empirical demonstrations of the Datta Das conductance oscillation are then described and discussed.

  3. Ellipsometric study of silicon nitride on gallium arsenide (United States)

    Alterovitz, S. A.; Bu-Abbud, G. H.; Woollam, J. A.; Liu, D.; Chung, Y.; Langer, D.


    A method for optimizing the sensitivity of ellipsometric measurements for thin dielectric films on semiconductors is described in simple physical terms. The technique is demonstrated for the case of sputtered silicon nitride films on gallium arsenide.

  4. Superlattice Intermediate Band Solar Cell on Gallium Arsenide (United States)


    AFRL-RV-PS- AFRL-RV-PS- TR-2015-0048 TR-2015-0048 SUPERLATTICE INTERMEDIATE BAND SOLAR CELL ON GALLIUM ARSENIDE Alexandre Freundlich...SUBTITLE 5a. CONTRACT NUMBER FA9453-13-1-0232 Superlattice Intermediate Band Solar Cell on Gallium Arsenide 5b. GRANT NUMBER 5c. PROGRAM ELEMENT solar cell incorporating low dimensional structures made with dilute nitrogen alloys of III-V semiconductors is investigated theoretically and

  5. Inhalation developmental toxicology studies: Gallium arsenide in mice and rats

    Energy Technology Data Exchange (ETDEWEB)

    Mast, T.J.; Greenspan, B.J.; Dill, J.A.; Stoney, K.H.; Evanoff, J.J.; Rommereim, R.L.


    Gallium arsenide is a crystalline compound used extensively in the semiconductor industry. Workers preparing solar cells and gallium arsenide ingots and wafers are potentially at risk from the inhalation of gallium arsenide dust. The potential for gallium arsenide to cause developmental toxicity was assessed in Sprague- Dawley rats and CD-1 (Swiss) mice exposed to 0, 10, 37, or 75 mg/m{sup 3} gallium arsenide, 6 h/day, 7 days/week. Each of the four treatment groups consisted of 10 virgin females (for comparison), and {approx}30 positively mated rats or {approx}24 positively mated mice. Mice were exposed on 4--17 days of gestation (dg), and rats on 4--19 dg. The day of plug or sperm detection was designated as 0 dg. Body weights were obtained throughout the study period, and uterine and fetal body weights were obtained at sacrifice (rats, 20 dg; mice, 18 dg). Implants were enumerated and their status recorded. Live fetuses were sexed and examined for gross, visceral, skeletal, and soft-tissue craniofacial defects. Gallium and arsenic concentrations were determined in the maternal blood and uterine contents of the rats (3/group) at 7, 14, and 20 dg. 37 refs., 11 figs., 30 tabs.

  6. Framework structures of interconnected layers in calcium iron arsenides. (United States)

    Stürzer, Tobias; Hieke, Christine; Löhnert, Catrin; Nitsche, Fabian; Stahl, Juliane; Maak, Christian; Pobel, Roman; Johrendt, Dirk


    The new calcium iron arsenide compounds Ca(n(n+1)/2)(Fe(1-x)M(x))(2+3n)M'(n(n-1)/2)As((n+1)(n+2)/2) (n = 1-3; M = Nb, Pd, Pt; M' = □, Pd, Pt) were synthesized and their crystal structures determined by single-crystal X-ray diffraction. The series demonstrates the structural flexibility of iron arsenide materials, which otherwise prefer layered structures, as is known from the family of iron-based superconductors. In the new compounds, iron arsenide tetrahedral layers are bridged by iron-centered pyramids, giving rise to so far unknown frameworks of interconnected FeAs layers. Channels within the structures are occupied with calcium and palladium or platinum, respectively. Common basic building blocks are identified that lead to a better understanding of the building principles of these structures and their relation to CaFe4As3.

  7. A Review of Liquid Phase Epitaxial Grown Gallium Arsenide


    Alexiev, D.; Prokopovich, D. A.; Thomson, S.; Mo, L.; Rosenfeld, A B; Reinhard, M


    Liquid phase epitaxy of gallium arsenide (LPE GaAs) has been investigated intensively from the late 1960's to the present and has now a special place in the manufacture of wide band, compound semiconductor radiation detectors. Although this particular process appears to have gained prominence in the last three decades, it is interesting to note that its origins reach back to 1836 when Frankenheim made his first observations. A brief review is presented from a semiconductor applications point ...

  8. Thermal cycling, DLTS, and PEC studies on LEC gallium arsenide. [GaAs:Si

    Energy Technology Data Exchange (ETDEWEB)

    Santhanaraghavan, P. (Anna Univ., Madras (India). Crystal Growth Centre); Sankaranarayanan, K. (Anna Univ., Madras (India). Crystal Growth Centre); Arokiaraj, J. (Anna Univ., Madras (India). Crystal Growth Centre); Anbukumar, S. (Anna Univ., Madras (India). Crystal Growth Centre); Kumar, J. (Anna Univ., Madras (India). Crystal Growth Centre); Ramasamy, P. (Anna Univ., Madras (India). Crystal Growth Centre)


    This paper discusses the growth of gallium arsenide single crystals using the LEC technique. The Semi-insulating gallium arsenide was studied. The defect investigations were made by DLTS and etching studies. The variation of deep level concentration along the wafer was estimated using DLTS. The fabrication and efficiency of the PEC Solar cells are also reported. (orig.)

  9. Laser and electron beam processing of silicon and gallium arsenide

    Energy Technology Data Exchange (ETDEWEB)

    Narayan, J.


    Laser (photon) and electron beams provide a controlled source of heat by which surface layers of silicon and gallium arsenide can be rapidly melted and cooled with rates exceeding 10/sup 80/C/sec. The melting process has been used to remove displacement damage in ion implanted Si and GaAs, to remove dislocations, loops and precipitates in silicon and to study impurity segregation and solubility limits. The mechanisms associated with various phenomena will be examined. The possible impact of laser and electron beam processing on device technology, particularly with respect to solar cells is discussed.

  10. Strategic Review of Arsenide, Phosphide and Nitride MOSFETs

    Directory of Open Access Journals (Sweden)

    Gourab Dutta


    Full Text Available Metal oxide semiconductor field effect transistor used as an amplifier and switch uses Si primarily as a channel material for its very stable oxide SiO2. In-spite of many advantages there are some restrictions for Si MOS, so the world is approaching towards compound semiconductor for higher frequency and current. The development of compound semiconductor metal oxide semiconductor is also facing critical problems due to the lack of availability of proper gate oxide material. Research is being conducted on arsenide and phosphide metal oxide semiconductor field effect transistor. Nitride channel MOS are in focus due to their high band gap, high current and high temperature uses.

  11. Lattice parameters guide superconductivity in iron-arsenides (United States)

    Konzen, Lance M. N.; Sefat, Athena S.


    The discovery of superconducting materials has led to their use in technological marvels such as magnetic-field sensors in MRI machines, powerful research magnets, short transmission cables, and high-speed trains. Despite such applications, the uses of superconductors are not widespread because they function much below room-temperature, hence the costly cooling. Since the discovery of Cu- and Fe-based high-temperature superconductors (HTS), much intense effort has tried to explain and understand the superconducting phenomenon. While no exact explanations are given, several trends are reported in relation to the materials basis in magnetism and spin excitations. In fact, most HTS have antiferromagnetic undoped ‘parent’ materials that undergo a superconducting transition upon small chemical substitutions in them. As it is currently unclear which ‘dopants’ can favor superconductivity, this manuscript investigates crystal structure changes upon chemical substitutions, to find clues in lattice parameters for the superconducting occurrence. We review the chemical substitution effects on the crystal lattice of iron-arsenide-based crystals (2008 to present). We note that (a) HTS compounds have nearly tetragonal structures with a-lattice parameter close to 4 Å, and (b) superconductivity can depend strongly on the c-lattice parameter changes with chemical substitution. For example, a decrease in c-lattice parameter is required to induce ‘in-plane’ superconductivity. The review of lattice parameter trends in iron-arsenides presented here should guide synthesis of new materials and provoke theoretical input, giving clues for HTS.

  12. Macroscopic diffusion models for precipitation in crystalline gallium arsenide

    Energy Technology Data Exchange (ETDEWEB)

    Kimmerle, Sven-Joachim Wolfgang


    Based on a thermodynamically consistent model for precipitation in gallium arsenide crystals including surface tension and bulk stresses by Dreyer and Duderstadt, we propose two different mathematical models to describe the size evolution of liquid droplets in a crystalline solid. The first model treats the diffusion-controlled regime of interface motion, while the second model is concerned with the interface-controlled regime of interface motion. Our models take care of conservation of mass and substance. These models generalise the well-known Mullins- Sekerka model for Ostwald ripening. We concentrate on arsenic-rich liquid spherical droplets in a gallium arsenide crystal. Droplets can shrink or grow with time but the centres of droplets remain fixed. The liquid is assumed to be homogeneous in space. Due to different scales for typical distances between droplets and typical radii of liquid droplets we can derive formally so-called mean field models. For a model in the diffusion-controlled regime we prove this limit by homogenisation techniques under plausible assumptions. These mean field models generalise the Lifshitz-Slyozov-Wagner model, which can be derived from the Mullins-Sekerka model rigorously, and is well understood. Mean field models capture the main properties of our system and are well adapted for numerics and further analysis. We determine possible equilibria and discuss their stability. Numerical evidence suggests in which case which one of the two regimes might be appropriate to the experimental situation. (orig.)

  13. First principles predictions of intrinsic defects in aluminum arsenide, AlAs : numerical supplement.

    Energy Technology Data Exchange (ETDEWEB)

    Schultz, Peter Andrew


    This Report presents numerical tables summarizing properties of intrinsic defects in aluminum arsenide, AlAs, as computed by density functional theory. This Report serves as a numerical supplement to the results published in: P.A. Schultz, 'First principles predictions of intrinsic defects in Aluminum Arsenide, AlAs', Materials Research Society Symposia Proceedings 1370 (2011; SAND2011-2436C), and intended for use as reference tables for a defect physics package in device models.

  14. Temperature dependence of carrier capture by defects in gallium arsenide

    Energy Technology Data Exchange (ETDEWEB)

    Wampler, William R. [Sandia National Lab. (SNL-NM), Albuquerque, NM (United States); Modine, Normand A. [Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)


    This report examines the temperature dependence of the capture rate of carriers by defects in gallium arsenide and compares two previously published theoretical treatments of this based on multi phonon emission (MPE). The objective is to reduce uncertainty in atomistic simulations of gain degradation in III-V HBTs from neutron irradiation. A major source of uncertainty in those simulations is poor knowledge of carrier capture rates, whose values can differ by several orders of magnitude between various defect types. Most of this variation is due to different dependence on temperature, which is closely related to the relaxation of the defect structure that occurs as a result of the change in charge state of the defect. The uncertainty in capture rate can therefore be greatly reduced by better knowledge of the defect relaxation.

  15. Methods for forming group III-arsenide-nitride semiconductor materials (United States)

    Major, Jo S. (Inventor); Welch, David F. (Inventor); Scifres, Donald R. (Inventor)


    Methods are disclosed for forming Group III-arsenide-nitride semiconductor materials. Group III elements are combined with group V elements, including at least nitrogen and arsenic, in concentrations chosen to lattice match commercially available crystalline substrates. Epitaxial growth of these III-V crystals results in direct bandgap materials, which can be used in applications such as light emitting diodes and lasers. Varying the concentrations of the elements in the III-V crystals varies the bandgaps, such that materials emitting light spanning the visible spectra, as well as mid-IR and near-UV emitters, can be created. Conversely, such material can be used to create devices that acquire light and convert the light to electricity, for applications such as full color photodetectors and solar energy collectors. The growth of the III-V crystals can be accomplished by growing thin layers of elements or compounds in sequences that result in the overall lattice match and bandgap desired.

  16. Design of Indium Arsenide nanowire sensors for pH and biological sensing and low temperature transport through p-doped Indium Arsenide nanowires

    DEFF Research Database (Denmark)

    Upadhyay, Shivendra

    remains the primary material of choice. This research is about investigating Indium Arsenide nanowires as alternative platform for sensing charged species - chemical and biological, in solution. Starting with nanowires grown via molecular beam epitaxy in an ultra-high vacuum chamber, we discuss...

  17. Structural, elastic, electronic properties and stability trends of 1111-like silicide arsenides and germanide arsenides MCuXAs (M = Ti, Zr, Hf; X = Si, Ge) from first principles

    Energy Technology Data Exchange (ETDEWEB)

    Bannikov, V.V.; Shein, I.R. [Institute of Solid State Chemistry, Ural Branch of the Russian Academy of Sciences, 620990 Ekaterinburg (Russian Federation); Ivanovskii, A.L., E-mail: [Institute of Solid State Chemistry, Ural Branch of the Russian Academy of Sciences, 620990 Ekaterinburg (Russian Federation)


    Highlights: Black-Right-Pointing-Pointer Silicide arsenides and germanide arsenides of Ti, Zr, Hf are probed from first principles. Black-Right-Pointing-Pointer Structural, elastic, electronic properties and stability trends are evaluated. Black-Right-Pointing-Pointer Bulk moduli of HfCuSiAs and HfCuGeAs are the largest among all 1111-like phases. Black-Right-Pointing-Pointer Chemical bonding is analyzed. - Abstract: The tetragonal (s.g. I4/nmm; no. 129) silicide arsenide ZrCuSiAs is well known as a structural type of the broad family of so-called 1111-like quaternary phases which includes now more than 150 representatives. These materials demonstrate a rich variety of outstanding physical properties (from p-type transparent semiconductors to high-temperature Fe-based superconductors) and attracted a great interest as promising candidates for a broad range of applications. At the same time, the data about the electronic and elastic properties of the ZrCuSiAs phase itself, as well as of related silicide arsenides and germanide arsenides are still very limited. Here for a series of six isostructural and isoelectronic 1111-like phases which includes both synthesized (ZrCuSiAs, HfCuSiAs, ZrCuGeAs, and HfCuGeAs) and hypothetical (TiCuSiAs and TiCuGeAs) materials, systematical studies of their structural, elastic, electronic properties and stability trends are performed by means of first-principles calculations.

  18. Gallium Arsenide (GaAs) Quantum Photonic Waveguide Circuits

    CERN Document Server

    Wang, Jianwei; Jiang, Pisu; Bonneau, Damien; Engin, Erman; Silverstone, Joshua W; Lermer, Matthias; Beetz, Johannes; Kamp, Martin; Hofling, Sven; Tanner, Michael G; Natarajan, Chandra M; Hadfield, Robert H; Dorenbos, Sander N; Zwiller, Val; O'Brien, Jeremy L; Thompson, Mark G


    Integrated quantum photonics is a promising approach for future practical and large-scale quantum information processing technologies, with the prospect of on-chip generation, manipulation and measurement of complex quantum states of light. The gallium arsenide (GaAs) material system is a promising technology platform, and has already successfully demonstrated key components including waveguide integrated single-photon sources and integrated single-photon detectors. However, quantum circuits capable of manipulating quantum states of light have so far not been investigated in this material system. Here, we report GaAs photonic circuits for the manipulation of single-photon and two-photon states. Two-photon quantum interference with a visibility of 94.9 +/- 1.3% was observed in GaAs directional couplers. Classical and quantum interference fringes with visibilities of 98.6 +/- 1.3% and 84.4 +/- 1.5% respectively were demonstrated in Mach-Zehnder interferometers exploiting the electro-optic Pockels effect. This w...

  19. Gallium arsenide pilot line for high performance components (United States)


    The Gallium Arsenide Pilot Line for High Performance Components (Pilot Line III) is to develop a facility for the fabrication of GaAs logic and memory chips. The first thirty months of this contract are now complete, and this report covers the period from March 27 through September 24, 1989. Similar to the PT-2M SRAM function for memories, the six logic circuits of PT-2L and PT-2M have served their functions as stepping stones toward the custom, standard cell, and cell array logic circuits. All but one of these circuits was right first time; the remaining circuit had a layout error due to a bug in the design rule checker that has since been fixed. The working devices all function over the full temperature range from -55 to 125 C. They all comfortably meet the 200 MHz requirement. They do not solidly conform to the required input and output voltage levels, particularly Vih. It is known that these circuits were designed with the older design models and that they came from an era where the DFET thresholds were often not on target.

  20. Surface-enhanced gallium arsenide photonic resonator with a quality factor of six million

    CERN Document Server

    Guha, Biswarup; Cadiz, Fabian; Morgenroth, Laurence; Ulin, Vladimir; Berkovitz, Vladimir; Lemaître, Aristide; Gomez, Carmen; Amo, Alberto; Combrié, Sylvian; Gérard, Bruno; Leo, Giuseppe; Favero, Ivan


    Gallium Arsenide and related compound semiconductors lie at the heart of optoelectronics and integrated laser technologies. Shaped at the micro and nano-scale, they allow strong interaction with quantum dots and quantum wells, and promise to result in stunning devices. However gallium arsenide optical structures presently exhibit lower performances than their silicon-based counterparts, notably in nanophotonics where the surface plays a chief role. Here we report on advanced surface control of miniature gallium arsenide optical resonators, using two distinct techniques that produce permanent results. One leads to extend the lifetime of free-carriers and enhance luminescence, while the other strongly reduces surface absorption originating from mid-gap states and enables ultra-low optical dissipation devices. With such surface control, the quality factor of wavelength-sized optical disk resonators is observed to rise up to six million at telecom wavelength, greatly surpassing previous realizations and opening n...

  1. A study of the applicability of gallium arsenide and silicon carbide as aerospace sensor materials (United States)

    Hurley, John S.


    Most of the piezoresistive sensors, to date, are made of silicon and germanium. Unfortunately, such materials are severly restricted in high temperature environments. By comparing the effects of temperature on the impurity concentrations and piezoresistive coefficients of silicon, gallium arsenide, and silicon carbide, it is being determined if gallium arsenide and silicon carbide are better suited materials for piezoresistive sensors in high temperature environments. The results show that the melting point for gallium arsenide prevents it from solely being used in high temperature situations, however, when used in the alloy Al(x)Ga(1-x)As, not only the advantage of the wider energy band gas is obtained, but also the higher desire melting temperature. Silicon carbide, with its wide energy band gap and higher melting temperature suggests promise as a high temperature piezoresistive sensor.

  2. The comparison between gallium arsenide and indium gallium arsenide as materials for solar cell performance using Silvaco application

    Energy Technology Data Exchange (ETDEWEB)

    Zahari, Suhaila Mohd; Norizan, Mohd Natashah; Mohamad, Ili Salwani; Osman, Rozana Aina Maulat; Taking, Sanna [School of Microelectronic Engineering, Universiti Malaysia Perlis, Kampus Pauh Putra, 02600 Arau, Perlis (Malaysia)


    The work presented in this paper is about the development of single and multilayer solar cells using GaAs and InGaAs in AM1.5 condition. The study includes the modeling structure and simulation of the device using Silvaco applications. The performance in term of efficiency of Indium Gallium Arsenide (InGaAs) and GaAs material was studied by modification of the doping concentration and thickness of material in solar cells. The efficiency of the GaAs solar cell was higher than InGaAs solar cell for single layer solar cell. Single layer GaAs achieved an efficiency about 25% compared to InGaAs which is only 2.65% of efficiency. For multilayer which includes both GaAs and InGaAs, the output power, P{sub max} was 8.91nW/cm² with the efficiency only 8.51%. GaAs is one of the best materials to be used in solar cell as a based compared to InGaAs.

  3. Magnetoelectric effect in layered structures of amorphous ferromagnetic alloy and gallium arsenide (United States)

    Bichurin, M. I.; Petrov, V. M.; Leontiev, V. S.; Ivanov, S. N.; Sokolov, O. V.


    A paper devotes to theoretical and experimental studying the magnetoelectric interaction in layered structures of amorphous ferromagnetic alloy and single- crystal gallium arsenide. The authors investigated the magnetoelectric effect in the (100) plane of gallium arsenide in the electromechanical resonance range of 200-240 kHz and obtained maximal ME voltage coefficient of 120 V/A at bias field equaled 3.6 kA/m for the direction parallel to the [011] axis. Also the magnetoelectric effect in the (110) and (111) planes is discussed. The results can be used for design of new electronic devices based on the magnetostrictive-semiconductor materials.

  4. High-field phase-diagram of Fe arsenide superconductors

    Energy Technology Data Exchange (ETDEWEB)

    Jo, Y.J.; Jaroszynski, J.; Yamamoto, A.; Gurevich, A.; Riggs, S.C.; Boebinger, G.S.; Larbalestier, D. [National High Magnetic Field Laboratory, Florida State University, Tallahassee-FL 32310 (United States); Wen, H.H. [Institute of Physics, Chinese Academy of Sciences, Beijing 100190 (China); Zhigadlo, N.D.; Katrych, S.; Bukowski, Z.; Karpinski, J. [Laboratory for Solid State Physics, ETH Zuerich, CH-8093 Zuerich (Switzerland); Liu, R.H.; Chen, H.; Chen, X.H. [Hefei National Laboratory for Physical Science a Microscale and Department of Physics, University of Science and Technology of China, Hefei, Anhui 230026 (China); Balicas, L., E-mail: balicas@magnet.fsu.ed [National High Magnetic Field Laboratory, Florida State University, Tallahassee-FL 32310 (United States)


    Here, we report an overview of the phase-diagram of single-layered and double-layered Fe arsenide superconductors at high magnetic fields. Our systematic magneto-transport measurements of polycrystalline SmFeAsO{sub 1-x}F{sub x} at different doping levels confirm the upward curvature of the upper critical magnetic field H{sub c2}(T) as a function of temperature T defining the phase boundary between the superconducting and metallic states for crystallites with the ab planes oriented nearly perpendicular to the magnetic field. We further show from measurements on single-crystals that this feature, which was interpreted in terms of the existence of two superconducting gaps, is ubiquitous among both series of single- and double-layered compounds. In all compounds explored by us the zero temperature upper critical field H{sub c2}(0), estimated either through the Ginzburg-Landau or the Werthamer-Helfand-Hohenberg single gap theories, strongly surpasses the weak-coupling Pauli paramagnetic limiting field. This clearly indicates the strong-coupling nature of the superconducting state and the importance of magnetic correlations for these materials. Our measurements indicate that the superconducting anisotropy, as estimated through the ratio of the effective masses gamma = (m{sub c}/m{sub ab}){sup 1/2} for carriers moving along the c-axis and the ab-planes, respectively, is relatively modest as compared to the high-T{sub c} cuprates, but it is temperature, field and even doping dependent. Finally, our preliminary estimations of the irreversibility field H{sub m}(T), separating the vortex-solid from the vortex-liquid phase in the single-layered compounds, indicates that it is well described by the melting of a vortex lattice in a moderately anisotropic uniaxial superconductor.

  5. Progress to a Gallium-Arsenide Deep-Center Laser

    Directory of Open Access Journals (Sweden)

    Janet L. Pan


    Full Text Available Although photoluminescence from gallium-arsenide (GaAs deep-centers was first observed in the 1960s, semiconductor lasers have always utilized conduction-to-valence-band transitions. Here we review recent materials studies leading to the first GaAs deep-center laser. First, we summarize well-known properties: nature of deep-center complexes, Franck-Condon effect, hotoluminescence. Second, we describe our recent work: insensitivity of photoluminescence with heating, striking differences between electroluminescence and photoluminescence, correlation between transitions to deep-states and absence of bandgap-emission. Room-temperature stimulated-emission from GaAs deep-centers was observed at low electrical injection, and could be tuned from the bandgap to half-the-bandgap (900–1,600 nm by changing the electrical injection. The first GaAs deep-center laser was demonstrated with electrical injection, and exhibited a threshold of less than 27 mA/cm2 in continuous-wave mode at room temperature at the important 1.54 μm fiber-optic wavelength. This small injection for laser action was explained by fast depopulation of the lower state of the optical transition (fast capture of free holes onto deep-centers, which maintains the population inversion. The evidence for laser action included: superlinear L-I curve, quasi-Fermi level separations satisfying Bernard-Duraffourg’s criterion, optical gains larger than known significant losses, clamping of the optical-emission from lossy modes unable to reach laser action, pinning of the population distribution during laser action.

  6. Determination of the Peltier coefficient for gallium arsenide in a vertical Bridgman furnace (United States)

    Wiegel, Michaela E. K.; Matthiesen, David H.


    The Peltier coefficient for gallium arsenide solid in contact with its melt was experimentally determined. Selenium doped gallium arsenide samples were hermetically sealed in a fused quartz ampoule and processed in a vertical Bridgman furnace. During the translation period seven sequences of current-on and current-off periods were processed into the solidifying crystal. An axial slice was mechanochemically polished and then etched. Photomicrographs of the slice were taken with differential interference contrast microscopy and were used to measure the thickness of the current-on and current-off layers. These results were used to calculate growth rates from which the Peltier coefficient was calculated. An average value of 0.107±0.015 V was determined. The values calculated from the different sequences were in excellent agreement with each other even though the sequences had different current densities, current-on durations, and current-on to current-off ratios.

  7. An advanced space photovoltaic concentrator array using Fresnel lenses, gallium arsenide cells, and prismatic cell covers (United States)

    O'Neill, Mark J.; Piszczor, Michael F.


    The current status of a space concentrator array which uses refractive optics, gallium arsenide cells, and prismatic cell covers to achieve excellent performance at a very low array mass is documented. The prismatically covered cells have established records for space cell performance (24.2 percent efficient at 100 AM0 suns and 25 C) and terrestrial single-junction cell performance (29.3 percent efficient at 200 AM1.5 suns and 25 C).

  8. Probing the electronic properties of p-doped gallium arsenide nanowires



    Probing the electronic properties of nm-scaled object is a challenge but is required for doping optimalization and using the nm-scaled objects as building blocks in future devices. In the present study, electron beam induced deposition of platinum was used for contacting and creating two-point probes to beryllium-doped gallium arsenide nanowires. Thereby, a metal-semiconductor-metal structure with rectifying metal-semiconductor contact characteristic is formed (i.e. back-to-back Schottky diod...

  9. Two years of on-orbit gallium arsenide performance from the LIPS solar cell panel experiment (United States)

    Francis, R. W.; Betz, F. E.


    The LIPS on-orbit performance of the gallium arsenide panel experiment was analyzed from flight operation telemetry data. Algorithms were developed to calculate the daily maximum power and associated solar array parameters by two independent methods. The first technique utilizes a least mean square polynomial fit to the power curve obtained with intensity and temperature corrected currents and voltages; whereas, the second incorporates an empirical expression for fill factor based on an open circuit voltage and the calculated series resistance. Maximum power, fill factor, open circuit voltage, short circuit current and series resistance of the solar cell array are examined as a function of flight time. Trends are analyzed with respect to possible mechanisms which may affect successive periods of output power during 2 years of flight operation. Degradation factors responsible for the on-orbit performance characteristics of gallium arsenide are discussed in relation to the calculated solar cell parameters. Performance trends and the potential degradation mechanisms are correlated with existing laboratory and flight data on both gallium arsenide and silicon solar cells for similar environments.

  10. Electronic properties and chemical bonding in quaternary arsenide oxides LaZnAsO and YZnAsO

    Energy Technology Data Exchange (ETDEWEB)

    Bannikov, V.V.; Shein, I.R. [Institute of Solid State Chemistry, Ural Branch of the Russian Academy of Sciences, Pervomaiskaya, 91, 620041, Ekaterinburg (Russian Federation); Ivanovskii, A.L., E-mail: [Institute of Solid State Chemistry, Ural Branch of the Russian Academy of Sciences, Pervomaiskaya, 91, 620041, Ekaterinburg (Russian Federation)


    First principles FLAPW-GGA band structure calculations are employed to obtain the structural, electronic properties and chemical bonding picture for two related phases, namely, quaternary arsenide oxides LaZnAsO and YZnAsO. These compounds are found to be direct-transition type semiconductors with the GGA gaps of about 0.65-1.30 eV. The peculiarities of chemical bonding in these phases are investigated and discussed in comparison with quaternary arsenide oxide LaFeAsO-a basic phase for the newly discovered 26-55 K superconductors.

  11. High Pressure X-ray Diffraction Study on Icosahedral Boron Arsenide (B12As2)

    Energy Technology Data Exchange (ETDEWEB)

    J Wu; H Zhu; D Hou; C Ji; C Whiteley; J Edgar; Y Ma


    The high pressure properties of icosahedral boron arsenide (B12As2) were studied by in situ X-ray diffraction measurements at pressures up to 25.5 GPa at room temperature. B12As2 retains its rhombohedral structure; no phase transition was observed in the pressure range. The bulk modulus was determined to be 216 GPa with the pressure derivative 2.2. Anisotropy was observed in the compressibility of B12As2-c-axis was 16.2% more compressible than a-axis. The boron icosahedron plays a dominant role in the compressibility of boron-rich compounds.

  12. Development of gallium arsenide high-speed, low-power serial parallel interface modules: Executive summary (United States)


    Final report to NASA LeRC on the development of gallium arsenide (GaAS) high-speed, low power serial/parallel interface modules. The report discusses the development and test of a family of 16, 32 and 64 bit parallel to serial and serial to parallel integrated circuits using a self aligned gate MESFET technology developed at the Honeywell Sensors and Signal Processing Laboratory. Lab testing demonstrated 1.3 GHz clock rates at a power of 300 mW. This work was accomplished under contract number NAS3-24676.

  13. Growth of Gold-assisted Gallium Arsenide Nanowires on Silicon Substrates via Molecular Beam Epitaxy

    Directory of Open Access Journals (Sweden)

    Ramon M. delos Santos


    Full Text Available Gallium arsenide nanowires were grown on silicon (100 substrates by what is called the vapor-liquid-solid (VLS growth mechanism using a molecular beam epitaxy (MBE system. Good quality nanowires with surface density of approximately 108 nanowires per square centimeter were produced by utilizing gold nanoparticles, with density of 1011 nanoparticles per square centimeter, as catalysts for nanowire growth. X-ray diffraction measurements, scanning electron microscopy, transmission electron microscopy and Raman spectroscopy revealed that the nanowires are epitaxially grown on the silicon substrates, are oriented along the [111] direction and have cubic zincblende structure.

  14. Indium arsenide nanowire field-effect transistors for pH and biological sensing

    Energy Technology Data Exchange (ETDEWEB)

    Upadhyay, S.; Krogstrup, P.; Nygård, J., E-mail: [Center for Quantum Devices and Nanoscience Center, Niels Bohr Institute, University of Copenhagen, Universitetsparken 5, DK-2100 Copenhagen (Denmark); Frederiksen, R.; Lloret, N.; Martinez, K. L. [Bio-Nanotechnology and Nanomedicine Laboratory, Department of Chemistry and Nanoscience Center, University of Copenhagen, Universitetsparken 5, DK-2100 Copenhagen (Denmark); De Vico, L.; Jensen, J. H. [Department of Chemistry, University of Copenhagen, Universitetsparken 5, DK-2100 Copenhagen (Denmark)


    Indium Arsenide is a high mobility semiconductor with a surface electron accumulation layer that allows ohmic electrical contact to metals. Here, we present nanowire devices based on this material as a platform for chemical and biological sensing. The sensing principle involves the binding of a charged species at the sensor surface transduced via field effect into a change in current flowing through the sensor. We show the sensitivity of the platform to the H{sup +} ion concentration in solution as proof of principle and demonstrate the sensitivity to larger charged protein species. The sensors are highly reproducible and reach a detection limit of 10 pM for Avidin.

  15. Functional renormalization group study of an 8-band model for the iron arsenides (United States)

    Honerkamp, Carsten; Lichtenstein, Julian; Maier, Stefan A.; Platt, Christian; Thomale, Ronny; Andersen, Ole Krogh; Boeri, Lilia


    We investigate the superconducting pairing instabilities of eight-band models for 1111 iron arsenides. Using a functional renormalization group treatment, we determine how the critical energy scale for superconductivity depends on the electronic band structure. Most importantly, if we vary the parameters from values corresponding to LaFeAsO to SmFeAsO, the pairing scale is strongly enhanced, in accordance with the experimental observation. We analyze the reasons for this trend and compare the results of the eight-band approach to those found using five-band models.

  16. Functional renormalization group study of an eight-band model for the iron arsenides (United States)

    Lichtenstein, J.; Maier, S. A.; Honerkamp, C.; Platt, C.; Thomale, R.; Andersen, O. K.; Boeri, L.


    We investigate the superconducting pairing instabilities of eight-band models for the iron arsenides. Using a functional renormalization group treatment, we determine how the critical energy scale for superconductivity depends on the electronic band structure. Most importantly, if we vary the parameters from values corresponding to LaFeAsO to SmFeAsO, the pairing scale is strongly enhanced, in accordance with the experimental observation. We analyze the reasons for this trend and compare the results of the eight-band approach to those found using five-band models.

  17. Analytical and experimental procedures for determining propagation characteristics of millimeter-wave gallium arsenide microstrip lines (United States)

    Romanofsky, Robert R.


    In this report, a thorough analytical procedure is developed for evaluating the frequency-dependent loss characteristics and effective permittivity of microstrip lines. The technique is based on the measured reflection coefficient of microstrip resonator pairs. Experimental data, including quality factor Q, effective relative permittivity, and fringing for 50-omega lines on gallium arsenide (GaAs) from 26.5 to 40.0 GHz are presented. The effects of an imperfect open circuit, coupling losses, and loading of the resonant frequency are considered. A cosine-tapered ridge-guide text fixture is described. It was found to be well suited to the device characterization.


    Directory of Open Access Journals (Sweden)

    Mustafa TEMİZ


    Full Text Available Multiple quantum-well (MQW electroabsorptive self electro optic-effect devices (SEEDs are being extensively studied for use in optical switching and computing. The self electro-optic-effect devices which has quantum-well structures is a new optoelectronic technology with capability to obtain both optical inputs and outputs for Gallium-Arsenide/Aluminum Gallium-Arsenide (GaAs/AlGaAs electronic circuits. The optical inputs and outputs are based on quantum-well absorptive properties. These quantum-well structures consist of many thin layers of semiconductors materials of GaAs/AlGaAs which have emerged some important directions recently. The most important advance in the physics of these materials since the early days has been invention of the heterojunction structures which is based at present on GaAs technology. GaAs/AlGaAs structures present some important advantages to relevant band gap and index of refraction which allow to form the quantum-well structures and also to make semiconductor lasers, dedectors and waveguide optical switches.

  19. Structural and electrooptical characteristics of quantum dots emitting at 1.3 μm on gallium arsenide

    DEFF Research Database (Denmark)

    Fiore, A.; Oesterle, U.; Stanley, R.P.;


    We present a comprehensive study of the structural and emission properties of self-assembled InAs quantum dots emitting at 1.3 mum. The dots are grown by molecular beam epitaxy on gallium arsenide substrates. Room-temperature emission at 1.3 mum is obtained by embedding the dots in an InGaAs layer...

  20. Straw man trade between multi-junction, gallium arsenide, and silicon solar cells (United States)

    Gaddy, Edward M.


    Multi-junction (MJ), gallium arsenide (GaAs), and silicon (Si) solar cells have respective test efficiencies of approximately 24%, 18.5% and 14.8%. Multi-junction and gallium arsenide solar cells weigh more than silicon solar cells and cost approximately five times as much per unit power at the cell level. A straw man trade is performed for the TRMM spacecraft to determine which of these cell types would have offered an overall performance and price advantage to the spacecraft. A straw man trade is also performed for the multi-junction cells under the assumption that they will cost over ten times that of silicon cells at the cell level. The trade shows that the TRMM project, less the cost of the instrument, ground systems and mission operations, would spend approximately $552 thousand dollars per kilogram to launch and service science in the case of the spacecraft equipped with silicon solar cells. If these cells are changed out for gallium arsenide solar cells, an additional 31 kilograms of science can be launched and serviced at a price of approximately $90 thousand per kilogram. The weight reduction is shown to derive from the smaller area of the array and hence reductions in the weight of the array substrate and supporting structure. If the silicon solar cells are changed out for multi-junction solar cells, an additional 45 kilograms of science above the silicon base line can be launched and serviced at a price of approximately $58 thousand per kilogram. The trade shows that even if the multi-junction arrays are priced over ten times that of silicon cells, a price that is much higher than projected, that the additional 45 kilograms of science are launched and serviced at $182 thousand per kilogram. This is still much less than original $552 thousand per kilogram to launch and service the science. Data and qualitative factors are presented to show that these figures are subject to a great deal of uncertainty. Nonetheless, the benefit of the higher efficiency

  1. Electronic structure, magnetic and superconducting properties of co-doped iron-arsenide superconductors

    Energy Technology Data Exchange (ETDEWEB)

    Rosner, Helge; Schnelle, Walter; Nicklas, Michael; Leithe-Jasper, Andreas [MPI CPfS Dresden (Germany); Weikert, Franziska [Los Alamos National Laboratory, New Mexico (United States); HLD Dresden Rossendorf (Germany); Wosnitza, Joachim [HLD Dresden Rossendorf (Germany)


    We present a joint experimental and theoretical study of co-doped iron-arsenide superconductors of the 122 family A{sub 1-x}K{sub x}Fe{sub 2-y}T{sub y}As{sub 2} (A = Ba,Sr,Eu; T = Co,Ru,Rh). In these systems, the co-doping enables the separation of different parameters - like electron count, disorder or the specific geometry of the FeAs layer - with respect to the position of the respective compounds in the general 122 phase diagram. For a series of compounds, we investigate the relevance of the different parameters for the magnetic, thermodynamic and superconducting properties. Our experimental investigations are supported by density functional electronic structure calculations applying different approximations for doping and disorder.

  2. An effective electron mass in heavily doped gallium arsenide under ordering impurity complexes

    CERN Document Server

    Bogdanova, V A; Semikolenova, N A; Sidorov, E N


    The results of an investigation of edge photoluminescence spectra at 300 K for series of Czochralski grown tellurium doped gallium arsenide monocrystals with free carriers concentration n sub 0 = 10 sup 1 sup 7 -10 sup 1 sup 9 cm sup - sup 3 are presented. On the basis of photoluminescence spectra contour analysis the concentration dependences of chemical potential and value of band gap narrowing are obtained. The concentration dependence of electron effective mass m* sub 0 (n sub 0) at the bottom of the conduction band is calculated. It is shown, that the nonmonotonous dependence m* sub 0 (n sub 0) is an accordance with electron scattering data in the material under study and is conditioned by ordering of impurity complexes

  3. NMR studies on the new iron arsenide superconductors including the superconducting state

    Energy Technology Data Exchange (ETDEWEB)

    Grafe, Hans-Joachim; Lang, Guillaume; Hammerath, Franziska; Manthey, Katarina; Behr, Guenther; Werner, Jochen; Buechner, Bernd [IFW Dresden, Helmholtzstr. 20, D-01069 Dresden (Germany); Paar, Dalibor [IFW Dresden, Helmholtzstr. 20, D-01069 Dresden (Germany); Dept. of Physics, Faculty of Science, Univ. of Zagreb (Croatia); Curro, Nicholas [Dept. of Physics, Univ. of California, Davis, CA 95616 (United States)


    We summarize our Nuclear Magnetic Resonance (NMR) and Nuclear Quadrupole Resonance (NQR) results on the new iron arsenide superconductor LaO{sub 1-x}F{sub x}FeAs in the normal state, and show new NMR data in the superconducting state. Beyond early evidence of nodes and spin-singlet pairing[2], we find evidence of a deviation of the T{sup 3} behaviour of the spin lattice relaxation rate, 1/T{sub 1}, at temperatures significantly below T{sub c}, which would agree with the suggested extended s-wave symmetry. The deviation of the T{sup 3} behaviour is induced by the pair breaking effect of impurities. Different amounts of impurities would lead to different temperature dependences of 1/T{sub 1}, which would allow to differentiate between d-wave and extended s-wave symmetries.

  4. Ultrafast photocurrents and terahertz radiation in gallium arsenide and carbon based nanostructures

    Energy Technology Data Exchange (ETDEWEB)

    Prechtel, Hans Leonhard


    In this thesis we developed a measurement technique based on a common pump-probe scheme and coplanar stripline circuits that enables time-resolved photocurrent measurements of contacted nanosystems with a micrometer spatial and a picosecond time resolution. The measurement technique was applied to lowtemperature grown gallium arsenide (LT-GaAs), carbon nanotubes (CNTs), graphene, and p-doped gallium arsenide (GaAs) nanowires. The various mechanisms responsible for the generation of current pulses by pulsed laser excitation were reviewed. Furthermore the propagation of the resulting electromagnetic radiation along a coplanar stripline circuit was theoretically and numerically treated. The ultrafast photocurrent response of low-temperature grown GaAs was investigated. We found two photocurrent pulses in the time-resolved response. We showed that the first pulse is consistent with a displacement current pulse. We interpreted the second pulse to result from a transport current process. We further determined the velocity of the photo-generated charge carriers to exceed the drift, thermal and quantum velocities of single charge carriers. Hereby, we interpreted the transport current pulse to stem from an electron-hole plasma excitation. We demonstrated that the photocurrent response of CNTs comprises an ultrafast displacement current and a transport current. The data suggested that the photocurrent is finally terminated by the recombination lifetime of the charge carriers. To the best of our knowledge, we presented in this thesis the first recombination lifetime measurements of contacted, suspended, CVD grown CNT networks. In addition, we studied the ultrafast photocurrent dynamics of freely suspended graphene contacted by metal electrodes. At the graphene-metal interface, we demonstrated that built-in electric fields give rise to a photocurrent with a full-width-half-maximum of a few picoseconds and that a photo-thermoelectric effect generates a current with a decay time

  5. Outdoor Performance of a Thin-Film Gallium-Arsenide Photovoltaic Module

    Energy Technology Data Exchange (ETDEWEB)

    Silverman, T. J.; Deceglie, M. G.; Marion, B.; Cowley, S.; Kayes, B.; Kurtz, S.


    We deployed a 855 cm2 thin-film, single-junction gallium arsenide (GaAs) photovoltaic (PV) module outdoors. Due to its fundamentally different cell technology compared to silicon (Si), the module responds differently to outdoor conditions. On average during the test, the GaAs module produced more power when its temperature was higher. We show that its maximum-power temperature coefficient, while actually negative, is several times smaller in magnitude than that of a Si module used for comparison. The positive correlation of power with temperature in GaAs is due to temperature-correlated changes in the incident spectrum. We show that a simple correction based on precipitable water vapor (PWV) brings the photocurrent temperature coefficient into agreement with that measured by other methods and predicted by theory. The low operating temperature and small temperature coefficient of GaAs give it an energy production advantage in warm weather.

  6. Advances in gallium arsenide monolithic microwave integrated-circuit technology for space communications systems (United States)

    Bhasin, K. B.; Connolly, D. J.


    Future communications satellites are likely to use gallium arsenide (GaAs) monolithic microwave integrated-circuit (MMIC) technology in most, if not all, communications payload subsystems. Multiple-scanning-beam antenna systems are expected to use GaAs MMIC's to increase functional capability, to reduce volume, weight, and cost, and to greatly improve system reliability. RF and IF matrix switch technology based on GaAs MMIC's is also being developed for these reasons. MMIC technology, including gigabit-rate GaAs digital integrated circuits, offers substantial advantages in power consumption and weight over silicon technologies for high-throughput, on-board baseband processor systems. In this paper, current developments in GaAs MMIC technology are described, and the status and prospects of the technology are assessed.

  7. Ultrafast Relaxation Dynamics of Photo-excited Dirac Fermion in Three Dimensional Dirac Semimetal Cadmium Arsenide

    CERN Document Server

    Lu, Wei; Liu, Xuefeng; Lu, Hong; Li, Caizhen; Lai, Jiawei; Zhao, Chuan; Tian, Ye; Liao, Zhimin; Jia, Shuang; Sun, Dong


    Three dimensional (3D) Dirac semimetal exhibiting ultrahigh mobility has recently attracted enormous research interests as 3D analogues of graphene. From the prospects of future application toward electronic/optoelectronic devices with extreme performance, it is crucial to understand the relaxation dynamics of photo-excited carriers and their coupling with lattice. In this work, we report ultrafast transient reflection measurements of photo-excited carrier dynamics in cadmium arsenide (Cd3As2), which is among the most stable Dirac semimetals that have been confirmed experimentally. With low energy probe photon of 0.3 eV, photo-excited Dirac Fermions dynamics closing to Dirac point are probed. Through transient reflection measurements on bulk and nanoplate samples that have different doping intensities, and systematic probe wavelength, pump power and lattice temperature dependent measurements, the dynamical evolution of carrier distributions can be retrieved qualitatively using a two-temperature model. The pho...

  8. Methods for forming group III-V arsenide-nitride semiconductor materials (United States)

    Major, Jo S. (Inventor); Welch, David F. (Inventor); Scifres, Donald R. (Inventor)


    Methods are disclosed for forming Group III--arsenide-nitride semiconductor materials. Group III elements are combined with group V elements, including at least nitrogen and arsenic, in concentrations chosen to lattice match commercially available crystalline substrates. Epitaxial growth of these III-V crystals results in direct bandgap materials, which can be used in applications such as light emitting diodes and lasers. Varying the concentrations of the elements in the III-V crystals varies the bandgaps, such that materials emitting light spanning the visible spectra, as well as mid-IR and near-UV emitters, can be created. Conversely, such material can be used to create devices that acquire light and convert the light to electricity, for applications such as full color photodetectors and solar energy collectors. The growth of the III-V crystals can be accomplished by growing thin layers of elements or compounds in sequences that result in the overall lattice match and bandgap desired.

  9. Highly ordered horizontal indium gallium arsenide/indium phosphide multi-quantum-well in wire structure on (001) silicon substrates (United States)

    Han, Yu; Li, Qiang; Lau, Kei May


    We report the characteristics of indium gallium arsenide stacked quantum structures inside planar indium phosphide nanowires grown on exact (001) silicon substrates. The morphological evolution of the indium phosphide ridge buffers inside sub-micron trenches has been studied, and the role of inter-facet diffusion in this process is discussed. Inside a single indium phosphide nanowire, we are able to stack quantum structures including indium gallium arsenide flat quantum wells, quasi-quantum wires, quantum wires, and ridge quantum wells. Room temperature photoluminescence measurements reveal a broadband emission spectrum centered at 1550 nm. Power dependent photoluminescence analysis indicates the presence of quasi-continuum states. This work thus provides insights into the design and growth process control of multiple quantum wells in wire structures for high performance nanowire lasers on a silicon substrate with 1550 nm band emission.

  10. In-Plane Electronic Anisotropy of Underdoped ___122___ Fe-Arsenide Superconductors Revealed by Measurements of Detwinned Single Crystals

    Energy Technology Data Exchange (ETDEWEB)

    Fisher, Ian Randal


    The parent phases of the Fe-arsenide superconductors harbor an antiferromagnetic ground state. Significantly, the Neel transition is either preceded or accompanied by a structural transition that breaks the four fold symmetry of the high-temperature lattice. Borrowing language from the field of soft condensed matter physics, this broken discrete rotational symmetry is widely referred to as an Ising nematic phase transition. Understanding the origin of this effect is a key component of a complete theoretical description of the occurrence of superconductivity in this family of compounds, motivating both theoretical and experimental investigation of the nematic transition and the associated in-plane anisotropy. Here we review recent experimental progress in determining the intrinsic in-plane electronic anisotropy as revealed by resistivity, reflectivity and ARPES measurements of detwinned single crystals of underdoped Fe arsenide superconductors in the '122' family of compounds.

  11. The Coefficients of Thermal Expansion of Boron Arsenide (B12As2) Between 25 C and 850 C

    Energy Technology Data Exchange (ETDEWEB)

    Whiteley, Clinton E. [Kansas State University; Kirkham, Melanie J [ORNL; Edgar, J H [Kansas State University


    The semiconductor boron arsenide has a high 10B density, a wide bandgap, and a high melting temperature, all of which make it an interesting candidate for high-temperature electronic devices and radiation detectors. The present investigation was undertaken to determine the coefficients of thermal expansion for boron arsenide. B12As2 powder was synthesized from boron and arsenic heated in a sealed quartz ampoule at 1100 C for 72 hrs with excess boron. Using high temperature X-ray diffraction (HTXRD) between 25 C and 850 C, the average lattice coefficients of thermal expansion were measured perpendicular and parallel to the <111> axis in the rhombohedral setting (equivalent to the a and c axes in the hexagonal setting): 4.9x10-6 K-1 and 5.3x10-6 K-1, respectively. The average unit cell volumetric coefficient of thermal expansion was determined to be 1.5x10-5 K-1.

  12. Boron Arsenide and Boron Phosphide for High Temperature and Luminescent Devices. [semiconductor devices - crystal growth/crystal structure (United States)

    Chu, T. L.


    The crystal growth of boron arsenide and boron phosphide in the form of bulk crystals and epitaxial layers on suitable substrates is discussed. The physical, chemical, and electrical properties of the crystals and epitaxial layers are examined. Bulk crystals of boron arsenide were prepared by the chemical transport technique, and their carrier concentration and Hall mobility were measured. The growth of boron arsenide crystals from high temperature solutions was attempted without success. Bulk crystals of boron phosphide were also prepared by chemical transport and solution growth techniques. Techniques required for the fabrication of boron phosphide devices such as junction shaping, diffusion, and contact formation were investigated. Alloying techniques were developed for the formation of low-resistance ohmic contacts to boron phosphide. Four types of boron phosphide devices were fabricated: (1) metal-insulator-boron phosphide structures, (2) Schottky barriers; (3) boron phosphide-silicon carbide heterojunctions; and (4) p-n homojunctions. Easily visible red electroluminescence was observed from both epitaxial and solution grown p-n junctions.

  13. Thermo-chemical properties and electrical resistivity of Zr-based arsenide chalcogenides

    Directory of Open Access Journals (Sweden)

    A. Schlechte, R. Niewa, M. Schmidt, G. Auffermann, Yu. Prots, W. Schnelle, D. Gnida, T. Cichorek, F. Steglich and R. Kniep


    Full Text Available Ternary phases in the systems Zr–As–Se and Zr–As–Te were studied using single crystals of ZrAs1.40(1Se0.50(1 and ZrAs1.60(2Te0.40(1 (PbFCl-type of structure, space group P4/nmm as well as ZrAs0.70(1Se1.30(1 and ZrAs0.75(1Te1.25(1 (NbPS-type of structure, space group Immm. The characterization covers chemical compositions, crystal structures, homogeneity ranges and electrical resistivities. At 1223 K, the Te-containing phases can be described with the general formula ZrAsxTe2−x, with 1.53(1≤x≤1.65(1 (As-rich and 0.58(1≤x≤0.75(1 (Te-rich. Both phases are located directly on the tie-line between ZrAs2 and ZrTe2, with no indication for any deviation. Similar is true for the Se-rich phase ZrAsxSe2−x with 0.70(1≤x≤0.75(1. However, the compositional range of the respective As-rich phase ZrAsx−ySe2−x (0.03(1≤y≤0.10(1; 1.42(1≤x≤1.70(1 is not located on the tie-line ZrAs2–ZrSe2, and exhibits a triangular region of existence with intrinsic deviation of the composition towards lower non-metal contents. Except for ZrAs0.75Se1.25, from the homogeneity range of the Se-rich phase, all compounds under investigation show metallic characteristics of electrical resistivity at temperatures >20 K. Related uranium and thorium arsenide selenides display a typical magnetic field-independent rise of the resistivity towards lower temperatures, which has been explained by a non-magnetic Kondo effect. However, a similar observation has been made for ZrAs1.40Se0.50, which, among the Zr-based arsenide chalcogenides, is the only system with a large concentration of intrinsic defects in the anionic substructure.

  14. Triamidoamine thorium-arsenic complexes with parent arsenide, arsinidiide and arsenido structural motifs (United States)

    Wildman, Elizabeth P.; Balázs, Gábor; Wooles, Ashley J.; Scheer, Manfred; Liddle, Stephen T.


    Despite a major expansion of uranium-ligand multiple bond chemistry in recent years, analogous complexes involving other actinides (An) remain scarce. For thorium, under ambient conditions only a few multiple bonds to carbon, nitrogen, phosphorus and chalcogenides are reported, and none to arsenic are known; indeed only two complexes with thorium-arsenic single bonds have been structurally authenticated, reflecting the challenges of stabilizing polar linkages at the large thorium ion. Here, we report thorium parent-arsenide (ThAsH2), -arsinidiides (ThAs(H)K and ThAs(H)Th) and arsenido (ThAsTh) linkages stabilized by a bulky triamidoamine ligand. The ThAs(H)K and ThAsTh linkages exhibit polarized-covalent thorium-arsenic multiple bonding interactions, hitherto restricted to cryogenic matrix isolation experiments, and the AnAs(H)An and AnAsAn linkages reported here have no precedent in f-block chemistry. 7s, 6d and 5f orbital contributions to the Th-As bonds are suggested by quantum chemical calculations, and their compositions unexpectedly appear to be tensioned differently compared to phosphorus congeners.

  15. Modelling of the small pixel effect in gallium arsenide X-ray imaging detectors

    CERN Document Server

    Sellin, P J


    A Monte Carlo simulation has been carried out to investigate the small pixel effect in highly pixellated X-ray imaging detectors fabricated from semi-insulating gallium arsenide. The presence of highly non-uniform weighting fields in detectors with a small pixel geometry causes the majority of the induced signal to be generated when the moving charges are close to the pixellated contacts. The response of GaAs X-ray imaging detectors is further complicated by the presence of charge trapping, particularly of electrons. In this work detectors are modelled with a pixel pitch of 40 and 150 mu m, and with thicknesses of 300 and 500 mu m. Pulses induced in devices with 40 mu m pixels are due almost totally to the movement of the lightly-trapped holes and can exhibit significantly higher charge collection efficiencies than detectors with large electrodes, in which electron trapping is significant. Details of the charge collection efficiencies as a function of interaction depth in the detector and of the incident phot...

  16. Triamidoamine thorium-arsenic complexes with parent arsenide, arsinidiide and arsenido structural motifs (United States)

    Wildman, Elizabeth P.; Balázs, Gábor; Wooles, Ashley J.; Scheer, Manfred; Liddle, Stephen T.


    Despite a major expansion of uranium–ligand multiple bond chemistry in recent years, analogous complexes involving other actinides (An) remain scarce. For thorium, under ambient conditions only a few multiple bonds to carbon, nitrogen, phosphorus and chalcogenides are reported, and none to arsenic are known; indeed only two complexes with thorium–arsenic single bonds have been structurally authenticated, reflecting the challenges of stabilizing polar linkages at the large thorium ion. Here, we report thorium parent–arsenide (ThAsH2), –arsinidiides (ThAs(H)K and ThAs(H)Th) and arsenido (ThAsTh) linkages stabilized by a bulky triamidoamine ligand. The ThAs(H)K and ThAsTh linkages exhibit polarized-covalent thorium–arsenic multiple bonding interactions, hitherto restricted to cryogenic matrix isolation experiments, and the AnAs(H)An and AnAsAn linkages reported here have no precedent in f-block chemistry. 7s, 6d and 5f orbital contributions to the Th–As bonds are suggested by quantum chemical calculations, and their compositions unexpectedly appear to be tensioned differently compared to phosphorus congeners. PMID:28276437

  17. Evaluation of a gallium arsenide solar panel on the LIPS II satellite

    Energy Technology Data Exchange (ETDEWEB)

    Trumble, T.M.; Betz, F.


    On 10 February 1983 the Living Plume Shield (LIPS II) satellite was launched by the Naval Research Laboratory with three double sided solar panels providing electrical power. One side of one panel contains 300 2cm X 2cm gallium arsenide (GaAs) solar cells while each of the other five sides contain 104 2.1cm X 6.2cm silicon (Si) solar cells. The U.S. Air Force developed GaAs cells were provided to the Navy in a cooperative program to build, test, qualify and fly a GaAs solar panel. Nineteen months after the beginning of the cooperative program the vehicle was launched. There are considerable statistical variances in the data and data cannot be acquired continuously owing to the requirement to be over a tracking station while the GaAs panel is facing the sun. The first 30 days of operation were unmeasured due to satellite orientation problems. The first measurements indicated a 7.3% power loss in panel performance compared to ground preflight measurements. This loss is still unexplained. This paper provides a summary of the LIPS II program and the data analysis on the GaAs solar panel performance for the first year in orbit.

  18. Monopole Charge Domain in High-Gain Gallium Arsenide Photoconductive Switches

    Institute of Scientific and Technical Information of China (English)

    施卫; 陈二柱; 张显斌; 李琦


    Considering that semi-insulating gallium arsenide photoconductive switches can be triggered into the high gain mode and no reliable theories can account for the observed transient characteristics, we propose the monopole charge domain model to explain the peculiar switching phenomena occurring in the high gain mode and we discuss the requirements for the lock-on switching. During operation on this mode, the applied field across the switch and the lock-on field are all larger than the Gunn threshold field. Our developed monopole charge domain is based on the transferred-electron effect, but the domain is only composed of large numbers of electrons piled up due to the negative differential mobility. Using the model and taking the physical mechanism of the avalanche impact ionization and recombination radiation into consideration, we interpret the typical phenomena of the lock-on effect, such as the time delay between the beginning of optical illumination and turning-on of the switch, and the conduction mechanism of the sustaining phase. Under different conditions of bias field intensity and incident light energy, the time delay of the switching is calculated. The results show that the physical mechanisms of impact ionization and recombination radiation occurring in the monopole charge domain are responsible for the lock-on switching.

  19. Superconductivity in the ternary iridium-arsenide BaIr2As2 (United States)

    Wang, Xiao-Chuan; Ruan, Bin-Bin; Yu, Jia; Pan, Bo-Jin; Mu, Qing-Ge; Liu, Tong; Chen, Gen-Fu; Ren, Zhi-An


    Here we report the synthesis and discovery of superconductivity in a novel ternary iridium-arsenide compound BaIr2As2. The polycrystalline BaIr2As2 sample was first synthesized by a high temperature and high pressure method. Crystal structural analysis indicates that BaIr2As2 crystallizes in the ThCr2Si2-type layered tetragonal structure with space group I4/mmm (No. 139), and the lattice parameters were refined to be a = 4.052(9) Å and c = 12.787(8) Å. By the electrical resistivity and magnetic susceptibility measurements we found type-II superconductivity in the new BaIr2As2 compound with a T c (critical temperature) of 2.45 K, and an upper critical field μ 0 H c2(0) about 0.2 T. Low temperature specific heat measurements gave a Debye temperature of about 202 K and a distinct specific jump with ΔC e /γT c = 1.36, which is close to the value of BCS weak coupling limit and confirms the bulk superconductivity in this new BaIr2As2 compound.

  20. Ab-initio Electronic, Transport and Related Properties of Zinc Blende Boron Arsenide (zb-BAs) (United States)

    Nwigboji, Ifeanyi H.; Malozovsky, Yuriy; Bagayoko, Diola

    We present results from ab-initio, self-consistent density functional theory (DFT) calculations of electronic, transport, and bulk properties of zinc blende boron arsenide (zb-BAs). We utilized a local density approximation (LDA) potential and the linear combination of atomic orbital (LCAO) formalism. Our computational technique follows the Bagayoko, Zhao, and Williams method, as enhanced by Ekuma and Franklin. Our results include electronic energy bands, densities of states, and effective masses. We explain the agreement between these findings, including the indirect band gap, and available, corresponding, experimental ones. This work confirms the capability of DFT to describe accurately properties of materials, provided the computations adhere to the conditions of validity of DFT [AIP Advances, 4, 127104 (2014)]. Acknowledgments: This work was funded in part by the National Science Foundation (NSF) and the Louisiana Board of Regents, through LASiGMA [Award Nos. EPS- 1003897, NSF (2010-15)-RII-SUBR] and NSF HRD-1002541, the US Department of Energy - National, Nuclear Security Administration (NNSA) (Award No. DE- NA0002630), LaSPACE, and LONI-SUBR.

  1. Transport-reaction model for defect and carrier behavior within displacement cascades in gallium arsenide

    Energy Technology Data Exchange (ETDEWEB)

    Wampler, William R.; Myers, Samuel Maxwell,


    A model is presented for recombination of charge carriers at displacement damage in gallium arsenide, which includes clustering of the defects in atomic displacement cascades produced by neutron or ion irradiation. The carrier recombination model is based on an atomistic description of capture and emission of carriers by the defects with time evolution resulting from the migration and reaction of the defects. The physics and equations on which the model is based are presented, along with details of the numerical methods used for their solution. The model uses a continuum description of diffusion, field-drift and reaction of carriers and defects within a representative spherically symmetric cluster. The initial radial defect profiles within the cluster were chosen through pair-correlation-function analysis of the spatial distribution of defects obtained from the binary-collision code MARLOWE, using recoil energies for fission neutrons. Charging of the defects can produce high electric fields within the cluster which may influence transport and reaction of carriers and defects, and which may enhance carrier recombination through band-to-trap tunneling. Properties of the defects are discussed and values for their parameters are given, many of which were obtained from density functional theory. The model provides a basis for predicting the transient response of III-V heterojunction bipolar transistors to pulsed neutron irradiation.

  2. Nonlinear radiation response of n-doped indium antimonide and indium arsenide in intense terahertz field (United States)

    Gong, Jiao-Li; Liu, Jin-Song; Chu, Zheng; Yang, Zhen-Gang; Wang, Ke-Jia; Yao, Jian-Quan


    The nonlinear radiation responses of two different n-doped bulk semiconductors: indium antimonide (InSb) and indium arsenide (InAs) in an intense terahertz (THz) field are studied by using the method of ensemble Monte Carlo (EMC) at room temperature. The results show that the radiations of two materials generate about 2-THz periodic regular spectrum distributions under a high field of 100 kV/cm at 1-THz center frequency. The center frequencies are enhanced to about 7 THz in InSb, and only 5 THz in InAs, respectively. The electron valley occupancy and the percentage of new electrons excited by impact ionization are also calculated. We find that the band nonparabolicity and impact ionization promote the generation of nonlinear high frequency radiation, while intervalley scattering has the opposite effect. Moreover, the impact ionization dominates in InSb, while impact ionization and intervalley scattering work together in InAs. These characteristics have potential applications in up-convension of THz wave and THz nonlinear frequency multiplication field. Project supported by the National Natural Science Foundation of China (Grant Nos. 11574105 and 61177095), the Natural Science Foundation of Hubei Province, China (Grant Nos. 2012FFA074 and 2013BAA002), the Wuhan Municipal Applied Basic Research Project, China (Grant No. 20140101010009), and the Fundamental Research Funds for the Central Universities, China (Grant Nos. 2013KXYQ004 and 2014ZZGH021).

  3. Fabrication and applications of orientation-patterned gallium arsenide for mid-infrared generation

    Energy Technology Data Exchange (ETDEWEB)

    Grisard, A.; Gutty, F.; Lallier, E. [Thales Research and Technology France, 1 av. Augustin Fresnel, 91767 Palaiseau Cedex (France); Gerard, B. [III-V Lab, 1 av. Augustin Fresnel, 91767 Palaiseau Cedex (France); Jimenez, J. [GdS Optronlab, Fisica Materia Condensada, Universidad de Valladolid, 47011 Valladolid (Spain)


    Nonlinear optical materials play a key role in the development of coherent sources of radiation, by frequency conversion of light from other light sources, e.g. diode, solid-state, and fiber lasers, into spectral ranges where few lasers exist or perform poorly. Based on the principle of the quasi-phase matching, the design and fabrication of orientation-patterned Gallium Arsenide crystals (OP-GaAs) has recently led to demonstrations of second harmonic generation, optical parametric generation, amplification and oscillation from 1 to 12 {mu}m. The most efficient fabrication route for these crystals relies on the use of the near-equilibrium growth process HVPE (Hydride Vapour Phase Epitaxy), by orientation-selective regrowth on OP-GaAs template wafers with a thickness suited to bulk nonlinear optics. This work deals with recent characterizations based on optical experiments and cathodoluminescence measurements, targeting the identification of the main defects, their spatial distribution, and their relation to the optical propagation losses. Latest improvements of the HVPE growth step have enabled to reach an unprecedented level of losses, below 0.016 cm{sup -1}, and a large range of available QPM periods and thickness of structures (copyright 2012 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  4. Development of devices and systems of growth of gallium arsenide ingots for micro, nano electronics and photovoltaics

    Directory of Open Access Journals (Sweden)

    A. P. Oksanich


    Full Text Available Gallium arsenide is a perspective semiconductor, the need for which is constantly increasing. This is associated with the development of electronic components operating in excess of the high frequency range and development of terrestrial photovoltaics based on gallium arsenide solar cells. Increase in diameter of grown ingots leads to a deterioration in their performance, which is caused by the imperfection of growing technology. The paper presents the results of the development of systems and devices which help to improve existing technology to produce GaAs ingots and wafers with a diameter of 100 mm with the best technical parameters. Developed a system to manage growing GaAs ingot. As a sensor of diameter ingot it uses a weighting method provides a measurement error in the process of growing ± 1,0 mm. The system allows to grow GaAs ingots with an error of ± 2 mm. For the formation of temperature gradients developed thermal unit, which provides a gradient of 51 .. 53 K cm in growing of ingots with diameter of 100 mm. For adjusting the process parameters were developed measuring device of the internal stresses that are generated in the ingot during the growth of the GaAs ingot. Presented in paper technical solutions provided a silicon ingot with a diameter of 100 mm. with mobility, cm2 V-1 s-1 - 2500 ÷ 3500, the charge carrier density, cm-3 - 5x1017 ÷ 5x1018; dislocation density, cm-2 - to 8x104.

  5. Phase diagram of (Li(1-x)Fe(x))OHFeSe: a bridge between iron selenide and arsenide superconductors. (United States)

    Dong, Xiaoli; Zhou, Huaxue; Yang, Huaixin; Yuan, Jie; Jin, Kui; Zhou, Fang; Yuan, Dongna; Wei, Linlin; Li, Jianqi; Wang, Xinqiang; Zhang, Guangming; Zhao, Zhongxian


    Previous experimental results have shown important differences between iron selenide and arsenide superconductors which seem to suggest that the high-temperature superconductivity in these two subgroups of iron-based families may arise from different electronic ground states. Here we report the complete phase diagram of a newly synthesized superconducting (SC) system, (Li1-xFex)OHFeSe, with a structure similar to that of FeAs-based superconductors. In the non-SC samples, an antiferromagnetic (AFM) spin-density-wave (SDW) transition occurs at ∼127 K. This is the first example to demonstrate such an SDW phase in an FeSe-based superconductor system. Transmission electron microscopy shows that a well-known √5×√5 iron vacancy ordered state, resulting in an AFM order at ∼500 K in AyFe2-xSe2 (A = metal ions) superconductor systems, is absent in both non-SC and SC samples, but a unique superstructure with a modulation wave vector q = (1)/2(1,1,0), identical to that seen in the SC phase of KyFe2-xSe2, is dominant in the optimal SC sample (with an SC transition temperature Tc = 40 K). Hence, we conclude that the high-Tc superconductivity in (Li1-xFex)OHFeSe stems from the similarly weak AFM fluctuations as FeAs-based superconductors, suggesting a universal physical picture for both iron selenide and arsenide superconductors.

  6. Electron tunneling transport across heterojunctions between europium sulfide and indium arsenide (United States)

    Kallaher, Raymond L.

    This dissertation presents research done on utilizing the ferromagnetic semiconductor europium sulfide (EuS) to inject spin polarized electrons into the non-magnetic semiconductor indium arsenide (InAs). There is great interest in expanding the functionality of modern day electronic circuits by creating devices that depend not only on the flow of charge in the device, but also on the transport of spin through the device. Within this mindset, there is a concerted effort to establish an efficient means of injecting and detecting spin polarized electrons in a two dimensional electron system (2DES) as the first step in developing a spin based field effect transistor. Thus, the research presented in this thesis has focused on the feasibility of using EuS, in direct electrical contact with InAs, as a spin injecting electrode into an InAs 2DES. Doped EuS is a concentrated ferromagnetic semiconductor, whose conduction band undergoes a giant Zeeman splitting when the material becomes ferromagnetic. The concomitant difference in energy between the spin-up and spin-down energy bands makes the itinerant electrons in EuS highly spin polarized. Thus, in principle, EuS is a good candidate to be used as an injector of spin polarized electrons into non-magnetic materials. In addition, the ability to adjust the conductivity of EuS by varying the doping level in the material makes EuS particularly suited for injecting spins into non-magnetic semiconductors and 2DES. For this research, thin films of EuS have been grown via e-beam evaporation of EuS powder. This growth technique produces EuS films that are sulfur deficient; these sulfur vacancies act as intrinsic electron donors and the resulting EuS films behave like heavily doped ferromagnetic semiconductors. The growth parameters and deposition procedures were varied and optimized in order to fabricate films that have minimal crystalline defects. Various properties and characteristics of these EuS films were measured and compared to

  7. Point defects and electric compensation in gallium arsenide single crystals; Punktdefekte und elektrische Kompensation in Galliumarsenid-Einkristallen

    Energy Technology Data Exchange (ETDEWEB)

    Kretzer, Ulrich


    In the present thesis the point-defect budget of gallium arsenide single crystals with different dopings is studied. It is shown, in which way the concentration of the single point defects depende on the concentration of the dopants, the stoichiometry deviation, and the position of the Fermi level. For this serve the results of the measurement-technical characterization of a large number of samples, in the fabrication of which these parameters were directedly varied. The main topic of this thesis lies in the development of models, which allow a quantitative description of the experimentally studied electrical and optical properties of gallium arsenide single crystals starting from the point-defect concentrations. Because from point defects charge carriers can be set free, their concentration determines essentially the charge-carrier concentration in the bands. In the ionized state point defects act as scattering centers for free charge carriers and influence by this the drift mobility of the charge carriers. A thermodynamic modeling of the point-defect formation yields statements on the equilibrium concentrations of the point defects in dependence on dopant concentration and stoichiometry deviation. It is show that the electrical properties of the crystals observed at room temperature result from the kinetic suppression of processes, via which the adjustment of a thermodynamic equilibrium between the point defects is mediated. [German] In der vorliegenden Arbeit wird der Punktdefekthaushalt von Galliumarsenid-Einkristallen mit unterschiedlichen Dotierungen untersucht. Es wird gezeigt, in welcher Weise die Konzentration der einzelnen Punktdefekte von der Konzentration der Dotierstoffe, der Stoechiometrieabweichung und der Lage des Ferminiveaus abhaengen. Dazu dienen die Ergebnisse der messtechnischen Charakterisierung einer grossen Anzahl von Proben, bei deren Herstellung diese Parameter gezielt variiert wurden. Der Schwerpunkt der Arbeit liegt in der Entwicklung

  8. Non-local exchange correlation functionals impact on the structural, electronic and optical properties of III-V arsenides

    KAUST Repository

    Anua, N. Najwa


    Exchange correlation (XC) energy functionals play a vital role in the efficiency of density functional theory (DFT) calculations, more soundly in the calculation of fundamental electronic energy bandgap. In the present DFT study of III-arsenides, we investigate the implications of XC-energy functional and corresponding potential on the structural, electronic and optical properties of XAs (X = B, Al, Ga, In). Firstly we report and discuss the optimized structural lattice parameters and the band gap calculations performed within different non-local XC functionals as implemented in the DFT-packages: WIEN2k, CASTEP and SIESTA. These packages are representative of the available code in ab initio studies. We employed the LDA, GGA-PBE, GGA-WC and mBJ-LDA using WIEN2k. In CASTEP, we employed the hybrid functional, sX-LDA. Furthermore LDA, GGA-PBE and meta-GGA were employed using SIESTA code. Our results point to GGA-WC as a more appropriate approximation for the calculations of structural parameters. However our electronic bandstructure calculations at the level of mBJ-LDA potential show considerable improvements over the other XC functionals, even the sX-LDA hybrid functional. We report also the optical properties within mBJ potential, which show a nice agreement with the experimental measurements in addition to other theoretical results. © 2013 IOP Publishing Ltd.

  9. A novel three-jet microreactor for localized metal-organic chemical vapour deposition of gallium arsenide: design and simulation (United States)

    Konakov, S. A.; Krzhizhanovskaya, V. V.


    We present a novel three-jet microreactor design for localized deposition of gallium arsenide (GaAs) by low-pressure Metal-Organic Chemical Vapour Deposition (MOCVD) for semiconductor devices, microelectronics and solar cells. Our approach is advantageous compared to the standard lithography and etching technology, since it preserves the nanostructure of the deposited material, it is less time-consuming and less expensive. We designed two versions of reactor geometry with a 10-micron central microchannel for precursor supply and with two side jets of a dilutant to control the deposition area. To aid future experiments, we performed computational modeling of a simplified-geometry (twodimensional axisymmetric) microreactor, based on Navier-Stokes equations for a laminar flow of chemically reacting gas mixture of Ga(CH3)3-AsH3-H2. Simulation results show that we can achieve a high-rate deposition (over 0.3 μm/min) on a small area (less than 30 μm diameter). This technology can be used in material production for microelectronics, optoelectronics, photovoltaics, solar cells, etc.

  10. Universal Heat Conduction in the Iron Arsenide Superconductor KFe2As2: Evidence of a d-Wave State

    Energy Technology Data Exchange (ETDEWEB)

    Reid, J.-Ph.; Tanatar, Makariy A.; Juneau-Fecteau, A.; Gordon, R.T.; Rene de Cotret, S.; Doiron-Leyraud, N.; Saito, T.; Fukazawa, H.; Kohori, Y.; Kihou, K.; Lee, C.H.; Iyo, A.; Eisaki, H.; Prozorov, Ruslan; Taillefer, Louis


    The thermal conductivity κ of the iron arsenide superconductor KFe2As2 was measured down to 50 mK for a heat current parallel and perpendicular to the tetragonal c axis. A residual linear term at T→0, κ0/T is observed for both current directions, confirming the presence of nodes in the superconducting gap. Our value of κ0/T in the plane is equal to that reported by Dong et al. [ Phys. Rev. Lett. 104 087005 (2010)] for a sample whose residual resistivity ρ0 was 10 times larger. This independence of κ0/T on impurity scattering is the signature of universal heat transport, a property of superconducting states with symmetry-imposed line nodes. This argues against an s-wave state with accidental nodes. It favors instead a d-wave state, an assignment consistent with five additional properties: the magnitude of the critical scattering rate Γc for suppressing Tc to zero; the magnitude of κ0/T, and its dependence on current direction and on magnetic field; the temperature dependence of κ(T).

  11. Gallium arsenide exposure impairs processing of particulate antigen by macrophages: modification of the antigen reverses the functional defect. (United States)

    Hartmann, Constance B; McCoy, Kathleen L


    Gallium arsenide (GaAs), a semiconductor used in the electronics industry, causes systemic immunosuppression in animals. The chemical's impact on macrophages to process the particulate antigen, sheep red blood cells (SRBC), for a T cell response in culture was examined after in vivo exposure of mice. GaAs-exposed splenic macrophages were defective in activating SRBC-primed lymph node T cells that could not be attributed to impaired phagocytosis. Modified forms of SRBC were generated to examine the compromised function of GaAs-exposed macrophages. SRBC were fixed to maintain their particulate nature and subsequently delipidated with detergent. Delipidation of intact SRBC was insufficient to restore normal antigen processing in GaAs-exposed macrophages. However, chemically exposed cells efficiently processed soluble sheep proteins. These findings suggest that the problem may lie in the release of sequestered sheep protein antigens, which then could be effectively cleaved to peptides. Furthermore, opsonization of SRBC with IgG compensated for the macrophage processing defect. The influence of signal transduction and phagocytosis via Fcgamma receptors on improved antigen processing could be dissociated. Immobilized anti-Fcgamma receptor antibody activated macrophages to secrete a chemokine, but did not enhance processing of unmodified SRBC by GaAs-exposed macrophages. Restoration of normal processing of particulate SRBC by chemically exposed macrophages involved phagocytosis through Fcgamma receptors. Hence, initial immune responses may be very sensitive to GaAs exposure, and the chemical's immunosuppression may be averted by opsonized particulate antigens.

  12. A final report for Gallium arsenide P-I-N detectors for high-sensitivity imaging of thermal neutrons

    CERN Document Server

    Vernon, S M


    This SBIR Phase I developed neutron detectors made FR-om gallium arsenide (GaAs) p-type/ intrinsic/n-type (P-I-N) diodes grown by metalorganic chemical vapor deposition (MOCVD) onto semi-insulating (S1) bulk GaAs wafers. A layer of isotonically enriched boron-10 evaporated onto the FR-ont surface serves to convert incoming neutrons into lithium ions and a 1.47 MeV alpha particle which creates electron-hole pairs that are detected by the GaAs diode. Various thicknesses of ''intrinsic'' (I) undoped GaAs were tested, as was use of a back-surface field (BSF) formed FR-om a layer of Al sub x Ga sub 1 sub - sub x As. Schottky-barrier diodes formed FR-om the same structures without the p+ GaAs top layer were tested as a comparison. After mesa etching and application of contacts, devices were tested in visible light before application of the boron coating. Internal quantum efficiency (IQE) of the best diode near the GaAs bandedge is over 90%. The lowest dark current measured is 1 x 10 sup - sup 1 sup 2 amps at -1 V o...

  13. Universal heat conduction in the iron arsenide superconductor KFe2As2: evidence of a d-wave state. (United States)

    Reid, J-Ph; Tanatar, M A; Juneau-Fecteau, A; Gordon, R T; de Cotret, S René; Doiron-Leyraud, N; Saito, T; Fukazawa, H; Kohori, Y; Kihou, K; Lee, C H; Iyo, A; Eisaki, H; Prozorov, R; Taillefer, Louis


    The thermal conductivity κ of the iron arsenide superconductor KFe2As2 was measured down to 50 mK for a heat current parallel and perpendicular to the tetragonal c axis. A residual linear term at T→0, κ(0)/T is observed for both current directions, confirming the presence of nodes in the superconducting gap. Our value of κ(0)/T in the plane is equal to that reported by Dong et al. [Phys. Rev. Lett. 104, 087005 (2010)] for a sample whose residual resistivity ρ(0) was 10 times larger. This independence of κ(0)/T on impurity scattering is the signature of universal heat transport, a property of superconducting states with symmetry-imposed line nodes. This argues against an s-wave state with accidental nodes. It favors instead a d-wave state, an assignment consistent with five additional properties: the magnitude of the critical scattering rate Γ(c) for suppressing T(c) to zero; the magnitude of κ(0)/T, and its dependence on current direction and on magnetic field; the temperature dependence of κ(T).

  14. The effect of hydrostatic pressure on the physical properties of magnesium arsenide in cubic and hexagonal phases (United States)

    Mokhtari, Ali; Sedighi, Matin


    Full potential-linearized augmented plane wave (FP-LAPW) method within density functional theory (DFT) was applied to study the structural and electronic properties of the magnesium arsenide in both cubic and hexagonal phases. The exchange-correlation functional was approximated as a generalized gradient functional introduced by Perdew-Burke-Ernzerhof (GGA96) and Engel-Vosko (EV-GGA). The lattice parameters, bulk modulus and its pressure derivative, cohesive energy, band structures and effective mass of electrons and holes (EME and EMH) were obtained and compared to the available experimental and theoretical results. A phase transition was predicted at pressure of about 1.63 GPa from the cubic to the hexagonal phase. The effect of hydrostatic pressure on the behavior of the electronic properties such as band gap, valence bandwidths, anti-symmetry gap (the energy gap between two parts of the valence bands), EME and EMH were investigated using both GGA96 and EV-GGA methods. High applied pressure can decrease (increase) the holes mobility of cubic (hexagonal) phase of this compound.

  15. Development of a unique laboratory standard: Indium gallium arsenide detector for the 500-1700 nm spectral region (United States)


    A planar (5 mm diameter) indium gallium arsenide detector having a high (greater than 50 pct) quantum efficiency from the visible into the infrared spectrum (500 to 1700 nm) was fabricated. Quantum efficiencies as high as 37 pct at 510 nm, 58 pct at 820 nm and 62 pct at 1300 nm and 1550 nm were measured. A planar InP/InGaAs detector structure was also fabricated using vapor phase epitaxy to grow device structures with 0, 0.2, 0.4 and 0.6 micrometer thick InP caps. Quantum efficiency was studied as a function of cap thickness. Conventional detector structures were also used by completely etching off the InP cap after zinc diffusion. Calibrated quantum efficiencies were measured. Best results were obtained with devices whose caps were completely removed by etching. Certain problems still remain with these detectors including non-uniform shunt resistance, reproducibility, contact resistance and narrow band anti-reflection coatings.

  16. LiCa₃As₂H and Ca₁₄As₆X₇ (X = C, H, N): two new arsenide hydride phases grown from Ca/Li metal flux. (United States)

    Blankenship, Trevor V; Wang, Xiaoping; Hoffmann, Christina; Latturner, Susan E


    The reaction of arsenic with sources of light elements in a Ca/Li melt leads to the formation of two new arsenide hydride phases. The predominant phase Ca14As6X7 (X = C(4-), N(3-), H(-)) exhibits a new tetragonal structure type in the space group P4/mbm (a = 15.749(1) Å, c = 9.1062(9) Å, Z = 4, R1 = 0.0150). The minor phase LiCa3As2H also has a new structure type in the orthorhombic space group Pnma (a = 11.4064(7) Å, b = 4.2702(3) Å, c = 11.8762(8)Å, Z = 4, R1 = 0.0135). Both phases feature hydride and arsenide anions separated by calcium cations. The red color of these compounds indicates they should be charge-balanced. DOS calculations on LiCa3As2H confirm a band gap of 1.4 eV; UV-vis spectroscopy on Ca14As6X7 shows a band gap of 1.6 eV. Single-crystal neutron diffraction studies were necessary to determine the mixed occupancy of carbon, nitrogen, and hydrogen anions on the six light-element sites in Ca14As6X7; these data indicated an overall stoichiometry of Ca14As6C(0.445)N(1.135)H(4.915).

  17. Superconductivity in Ti-doped iron-arsenide compound Sr4Cr0.8Ti1.2O6Fe2As2

    Institute of Scientific and Technical Information of China (English)


    Superconductivity was achieved in Ti-doped iron-arsenide compound Sr4Cr0.8Ti1.2O6Fe2As2 (abbreviated as Cr-FeAs-42622). The X-ray diffraction measurement shows that this material has a layered structure with the space group of P4/nmm,and with the lattice constants a = b = 3.9003  and c = 15.8376 . Clear diamagnetic signals in ac susceptibility data and zero-resistance in resistivity data were detected at about 6 K,confirming the occurrence of bulk superconductivity. Meanwhile we observed a supercon-ducting transition in the resistive data with the onset transition temperature at 29.2 K,which may be induced by the nonuniform distribution of the Cr/Ti content in the FeAs-42622 phase.

  18. One watt gallium arsenide class-E power amplifier with a thin-film bulk acoustic resonator filter embedded in the output network

    Directory of Open Access Journals (Sweden)

    Kyle Holzer


    Full Text Available Integration of a class-E power amplifier (PA and a thin-film bulk acoustic wave resonator (FBAR filter is shown to provide high power added efficiency in addition to superior out-of-band spectrum suppression. A discrete gallium arsenide pseudomorphic high-electron-mobility transistor is implemented to operate as a class-E amplifier from 2496 to 2690 MHz. The ACPF7041 compact bandpass FBAR filter is incorporated to replace the resonant LC tank in a traditional class-E PA. To reduce drain voltage stress, the supply choke is replaced by a finite inductance. The fabricated PA provides up to 1 W of output power with a peak power added efficiency (PAE of 58%. The improved out-of-band spectrum filtering is compared to a traditional class-E with discrete LC resonant filtering. Such PAs can be combined with linearisation techniques to reduce out-of-band emissions.

  19. Indium Arsenide Nanowires

    DEFF Research Database (Denmark)

    Madsen, Morten Hannibal

    -ray diffraction is performed with a MBE system attached to a synchrotron beam line. The evolution in crystal structure is monitored for different growth conditions and can be correlated to post growth analysis in TEM. This type of studies gives much more detailed information on formation of the crystal structure......This thesis is about growth of Au-assisted and self-assisted InAs nanowires (NWs). The wires are synthesized using a solid source molecular beam epitaxy (MBE) system and characterized with several techniques including scanning electron microscopy (SEM), transmission electron microscopy (TEM) and x...... by a systematic study to optimize the growth conditions; first the Au deposition, then the growth temperature and finally the beam fluxes. For further control of the growth, Au droplets have been positioned with electron beam lithography and large scale arrays with a > 99 % yield have been made on 2 inch...

  20. Analysis of radiation-damaged and annealed gallium arsenide and indium phosphide solar cells using deep-level transient spectroscopy techniques. Master's thesis

    Energy Technology Data Exchange (ETDEWEB)

    Pinzon, D.


    Degradation of solar cell performance from radiation damage was found to be reversed through annealing processes. The mechanisms behind the degradation and recovery is based on deep-level traps, or defects, in the lattice structure of the solar cell. Through a process known as Deep Level Transient Spectroscopy (DLTS), a correlation can be made between damage/recovery and trap energy level/concentration of the cell. Gallium Arsenide (GaAs) and Indium Phosphide (InP) solar cells were subjected to 1 MeV electron irradiation by a Dynamitron linear acceleration at two fluence levels of 1E1r and 1E15 electrons/cm sq. The process of annealing included thermal annealing at 90 c with forward bias current and thermal annealing alone for (GaAs). After each cycle, DLTS measurements were taken to determine the energy level of the traps and their concentration. Multiple cycles of irradiation, annealing and DLTS were performed to observe the correlation between degradation and recovery to trap energy level and concentration. The results show that the lower energy level traps are associated with the recovery of the cells while the higher level traps are associated with the overall permanent degradation of the cells.

  1. The effect of gallium arsenide aluminum laser therapy in the management of cervical myofascial pain syndrome: a double blind, placebo-controlled study. (United States)

    Dundar, U; Evcik, D; Samli, F; Pusak, H; Kavuncu, V


    The efficacy of low-level laser therapy (LLLT) in myofascial pain syndrome (MPS) seems controversial. A prospective, double-blind, randomized controlled trial was conducted in patients with chronic MPS in the neck to evaluate the effects of low-level 830-nm gallium arsenide aluminum (Ga-As-Al) laser therapy. The study group consisted of 64 MPS patients. The patients were randomly assigned into two groups. In group 1 (n = 32), Ga-As-Al laser treatment was applied over three trigger points bilaterally for 2 min over each point once a day for 15 days during a period of 3 weeks. In group 2 (n = 32), the same treatment protocol was given, but the laser instrument was switched off during applications. All patients in both groups performed daily isometric exercise and stretching exercises for cervical region. Parameters were measured at baseline and after 4 weeks. All patients were evaluated with respect to pain (at rest, movement, and night) and assessed by visual analog scale, measurement of active range of motion using an inclinometer and a goniometer, and the neck disability index. In both groups, statistically significant improvements were detected in all outcome measures compared with baseline (p 0.05). In conclusion, although the laser therapy has no superiority over placebo groups in this study, we cannot exclude the possibility of effectivity with another treatment regimen including different laser wavelengths and dosages (different intensity and density and/or treatment interval).

  2. NTP Toxicology and Carcinogenesis Studies of Gallium Arsenide (CAS No. 1303-00-0) in F344/N Rats and B6C3F1 Mice (Inhalation Studies). (United States)


    Gallium arsenide is used primarily to make light- emitting diodes, lasers, laser windows, and photodetectors and in the photoelectronic transmission of data through optical fibers. Gallium arsenide was nominated for study because of its widespread use in the microelectronics industry, the potential for worker exposure, and the absence of chronic toxicity data. Male and female F344/N rats and B6C3F1 mice were exposed to gallium arsenide particles (greater than 98% pure; mass median aerodynamic diameter = 0.8 to 1.0 &mgr;m) by inhalation for 16 days, 14 weeks, or 2 years. Genetic toxicology studies were conducted in Salmonella typhimurium, and the frequency of micronuclei was determined in the peripheral blood of mice exposed to gallium arsenide for 14 weeks. 16-DAY STUDY IN RATS: Groups of five male and five female rats were exposed to particulate aerosols of gallium arsenide with a mass median aerodynamic diameter of approximately 1 &mgr;m at concentrations of 0, 1, 10, 37, 75, or 150 mg/m(3) by inhalation, 6 hours per day, 5 days per week, for 16 days. All rats survived to the end of the study. The final mean body weights of all exposed groups of males and females were similar to those of the chamber controls. Compared to chamber controls, the liver and lung weights of males exposed to 1 mg/m(3) or greater and females exposed to 10 mg/m(3) or greater were increased; the thymus weights of all exposed groups of males were decreased. Gallium arsenide particles were visible in the alveolar spaces and, to a lesser extent, within alveolar macrophages of exposed rats. Moderate proteinosis (surfactant mixed with small amounts of fibrin) and minimal histiocytic cellular infiltrate were observed in the alveoli of exposed males and females. Epithelial hyperplasia and squamous metaplasia of the larynx were observed primarily in males exposed to 150 mg/m(3). 16-DAY STUDY IN MICE: Groups of five male and four or five female mice were exposed to particulate aerosols of gallium

  3. Sub-Half Micrometer Gate Lift-Off By Three Layer Resist Process Via Electron Beam Lithography For Gallium Arsenide Monolithic Microwave Integrated Circuits (MIMICs) (United States)

    Nagarajan, Rao M.; Rask, Steven D.; King, Michael R.; Yard, Thomas K.


    A three layer resist process for gate lift-oft on Gallium Arsenide MIMICs by electron Dean and optical lithographies are described. The electron beam lithography process consists of Poly (Dimethyl Glutarimide) PMGI as tne planarizing layer, a Plasma Enhanced Chemical Vapour Deposition silicon nitride (SiN) as an intermediate barrier layer and Poly (Methyl methacrylate), PMMA, as the top imaging layer. The PivimA is exposed by Cambridge Electron beam system EBMF 6.4 at 20kev and developed in Methyl Ethyl Ketone/Iso Propyl Alcohol. The pattern is then transferred to the SiN layer by cF4/o2 plasma etcning. The SiN layer is then used as the mask to transfer the pattern to the PMGI layer by 02 kteactive Ion Etching until tne GaAS is exposed. The various processing parameters are optimized to obtain lip or overnang suitable for lift-off with 0.20μm gate dimension. After the GaAS has been recessed (to reduce the parasitic source resistance), a thick 9000Å Ti/Pt/Au gate metal is evaporated and the unwanted gate metal is lifted oft using PMGI stripper. To use the three layer resist process in optical litnograpny, the MG.'. planarizing layer and PECVD SiN layer is used along with optical pnotoresist AZ1450J as a top imaging layer. inc sofcbake, uV exposure dose (436 nm) and development time for AZ145UJ are optimized to obtain 0.5μm to 1.0μm gate dimensions. The etch parameters for the pattern transfer to SiN and tnen to PMGI layers are same as in tne above process. The process levels such as mesa, source/drain, contact and metal levels for GaAs mlivilt,s are defined by UV lithography (Karl Suss contact aligner) using single layer pnotoresist. A nign overlay accuracy is obtained by use of gold metal Dumps as registration marks for aligning tne electron Dean exposed gate to optically exposed source/drain channel. Thus a higher tnrougnput and better linewidtn control are obtained using electron beam/optical lithography tecnniques. This approach is currently used to

  4. (121,123)Sb and (75)As NMR and NQR investigation of the tetrahedrite (Cu12Sb4S13)--Tennantite (Cu12As4S13) system and other metal arsenides. (United States)

    Bastow, T J; Lehmann-Horn, J A; Miljak, D G


    This work is motivated by the recent developments in online minerals analysis in the mining and minerals processing industry via nuclear quadrupole resonance (NQR). Here we describe a nuclear magnetic resonance (NMR) and NQR study of the minerals tennantite (Cu12As4S13) and tetrahedrite (Cu12 Sb4S13). In the first part NQR lines associated with (75)As in tennantite and (121,123)Sb isotopes in tetrahedrite are reported. The spectroscopy has been restricted to an ambient temperature studies in accord with typical industrial conditions. The second part of this contribution reports nuclear quadrupole-perturbed NMR findings on further, only partially characterised, metal arsenides. The findings enhance the detection capabilities of NQR based analysers for online measurement applications and may aid to control arsenic and antimony concentrations in metal processing stages.

  5. Wet chemical functionalization of III-V semiconductor surfaces: alkylation of gallium arsenide and gallium nitride by a Grignard reaction sequence. (United States)

    Peczonczyk, Sabrina L; Mukherjee, Jhindan; Carim, Azhar I; Maldonado, Stephen


    Crystalline gallium arsenide (GaAs) (111)A and gallium nitride (GaN) (0001) surfaces have been functionalized with alkyl groups via a sequential wet chemical chlorine activation, Grignard reaction process. For GaAs(111)A, etching in HCl in diethyl ether effected both oxide removal and surface-bound Cl. X-ray photoelectron (XP) spectra demonstrated selective surface chlorination after exposure to 2 M HCl in diethyl ether for freshly etched GaAs(111)A but not GaAs(111)B surfaces. GaN(0001) surfaces exposed to PCl(5) in chlorobenzene showed reproducible XP spectroscopic evidence for Cl-termination. The Cl-activated GaAs(111)A and GaN(0001) surfaces were both reactive toward alkyl Grignard reagents, with pronounced decreases in detectable Cl signal as measured by XP spectroscopy. Sessile contact angle measurements between water and GaAs(111)A interfaces after various levels of treatment showed that GaAs(111)A surfaces became significantly more hydrophobic following reaction with C(n)H(2n-1)MgCl (n = 1, 2, 4, 8, 14, 18). High-resolution As 3d XP spectra taken at various times during prolonged direct exposure to ambient lab air indicated that the resistance of GaAs(111)A to surface oxidation was greatly enhanced after reaction with Grignard reagents. GaAs(111)A surfaces terminated with C(18)H(37) groups were also used in Schottky heterojunctions with Hg. These heterojunctions exhibited better stability over repeated cycling than heterojunctions based on GaAs(111)A modified with C(18)H(37)S groups. Raman spectra were separately collected that suggested electronic passivation by surficial Ga-C bonds at GaAs(111)A. Specifically, GaAs(111)A surfaces reacted with alkyl Grignard reagents exhibited Raman signatures comparable to those of samples treated with 10% Na(2)S in tert-butanol. For GaN(0001), high-resolution C 1s spectra exhibited the characteristic low binding energy shoulder demonstrative of surface Ga-C bonds following reaction with CH(3)MgCl. In addition, 4

  6. Barium iron arsenide, barium cobalt arsenide, barium nickel arsenide single crystals and superconductivity upon cobalt doping

    Energy Technology Data Exchange (ETDEWEB)

    Ronning, Filip [Los Alamos National Laboratory; Sefat, A S [ORNL; Mcguire, M M [ORNL; Sales, B [ORNL; Jin, R [ORNL; Mandrus, D [ORNL


    The crystal structure and physical properties of BaFe{sub 2}As{sub 2}, BaCo{sub 2}As{sub 2}, and BaNi{sub 2}As{sub 2} single crystals are surveyed. BaFe{sub 2}As{sub 2} gives a magnetic and structural transition at T{sub N} = 132(1) K, BaCo{sub 2}As{sub 2} is a paramagnetic metal, while BaNi{sub 2}As{sub 2} has a structural phase transition at T{sub 0} = 131 K, followed by superconductivity below {Tc} = 0.69 K. The bulk superconductivity in Co-doped BaFe{sub 2}As{sub 2} below {Tc} = 22 K is demonstrated by resistivity, magnetic susceptibility, and specific heat data. In contrast to the cuprates, the Fe-based system appears to tolerate considerable disorder in the transition metal layers. First principles calculations for BaFe{sub 1.84}Co{sub 0.16}As{sub 2} inter-band scattering due to Co is weak.

  7. Evolution of magnetic and superconducting phases with doping and pressure in the underdoped iron-arsenide superconductor Ba{sub 1-x}K{sub x}Fe{sub 2}As{sub 2}

    Energy Technology Data Exchange (ETDEWEB)

    Hassinger, Elena [Universite de Sherbrooke, Quebec (Canada); Canadian Institute for Advanced Research, Toronto, Ontario (Canada); Max Planck Institut fuer Chemische Physik fester Stoffe, Dresden (Germany); Gredat, Gregory; Valade, Fabrice; Rene de Cotret, Samuel; Juneau-Fecteau, Alexandre; Reid, Jean-Philippe; Doiron-Leyraud, Nicolas [Universite de Sherbrooke, Quebec (Canada); Kim, H.; Tanatar, Makariy A.; Prozorov, Ruslan [Ames Laboratory, Ames, Iowa (United States); Shen, B.; Wen, H.H. [Nanjing University (China); Taillefer, Louis [Universite de Sherbrooke, Quebec (Canada); Canadian Institute for Advanced Research, Toronto, Ontario (Canada)


    The electrical resistivity ρ of the iron-arsenide superconductor Ba{sub 1-x}K{sub x}Fe{sub 2}As{sub 2} was measured in applied pressures up to 2.75 GPa for seven underdoped samples. Six of them are antiferromagnetic at P = 0 with 0.16 < x < 0.24 and one is non-magnetic with x = 0.26. The stripe-like antiferromagnetic ordering temperature T{sub N}, detected as a sharp anomaly in ρ(T), decreases linearly with pressure. For every magnetic sample a second phase appears with pressure at a lower temperature T{sub 0}, which rises with pressure. The critical pressure above which this phase appears decreases with doping going to zero for x = 0.24 just below the critical doping for the magnetic phase. This behaviour is reminiscent of the second magnetic phase appearing in Ba{sub 0.76}Na{sub 0.24}Fe{sub 2}As{sub 2} where the tetragonal symmetry is restored in favour of the scenario in which the nematic order in the iron pnictides is of magnetic origin.

  8. Elastic properties and inter-atomic bonding in layered Fe-Cu arsenide oxide Sr{sub 2}Fe{sub 2}CuAs{sub 2}O{sub 2}

    Energy Technology Data Exchange (ETDEWEB)

    Shein, Igor R.; Bannikov, Vyacheslav V.; Ivanovskii, Alexander L. [Institute of Solid State Chemistry, Ural Branch of the Russian Academy of Sciences, Ekaterinburg (Russian Federation)


    Inspired by recent discovery of the layered five-component phase - the tetragonal arsenide oxide Sr{sub 2}Fe{sub 2}CuAs{sub 2}O{sub 2} uniting two types of [Fe{sub 2}As{sub 2}] and [CuO{sub 2}] blocks, which are the main building blocks inherent in two basic families of high-T{sub C} superconductors: so-called cuprates and iron-pnictides, we used the first principles calculations to predict the elastic properties and to find their interplay with inter-atomic bonding for this unique system. Our data reveal that the examined phase is a relatively soft material; the predicted bulk and shear modules are about 90 and 54 GPa, respectively. Besides, this system is mechanically stable, adopts considerable elastic anisotropy, and should demonstrate brittleness. These conclusions agree with the bonding picture for Sr{sub 2}Fe{sub 2}CuAs{sub 2}O{sub 2}, according to which the inter-atomic bonding in this system is highly anisotropic and includes ionic, covalent, and metallic contributions, where inside [Fe{sub 2}As{sub 2}] and [CuO{sub 2}] blocks covalent-ionic Fe-As, Cu-O and metallic-like Fe-Fe bonds take place, whereas inter-blocks bonding is basically of the ionic type. (Copyright copyright 2011 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

  9. Iron arsenides with three-dimensional FeAs layer networks: Can(n+1)/2(Fe1-xPtx)(2+3n)Ptn(n-1)/2As(n+1)(n+2)/2 (n=2, 3)

    Energy Technology Data Exchange (ETDEWEB)

    Katayama, Naoyuki; Onari, Seiichiro; Matsubayashi, Kazuyuki; Uwatoko, Yoshiya; Sawa, Hiroshi


    We report the comprehensive studies between synchrotron X-ray diffraction, electrical resistivity and magnetic susceptibility experiments for the iron arsenides Can(n+1)/2(Fe1-xPtx)(2+3n)Ptn(n -1)/2As(n+1)(n+2)/2 for n=2 and 3. Both structures crystallize in the monoclinic space group P21/m (#11) with three-dimensional FeAs structures. The horizontal FeAs layers are bridged by inclined FeAs planes through edge-sharing FeAs5 square pyramids, resulting in triangular tunneling structures rather than the simple layered structures found in conventional iron arsenides. n=3 system shows a sign of superconductivity with a small volume fraction. Our first-principles calculations of these systems clearly indicate that the Fermi surfaces originate from strong Fe-3d characters and the three-dimensional nature of the electric structures for both systems, thus offering the playgrounds to study the effects of dimensionality on high Tc superconductivity.

  10. 负电子亲和势砷化镓光阴极热发射度测量%Thermal Emittance Measurement of Negative Electron Affinity Gallium Arsenide Photocathode

    Institute of Scientific and Technical Information of China (English)

    吴岱; 潘清; 肖德鑫; 李凯; 杨仁俊; 王建新; 张海旸


    作为未来高平均功率、高亮度电子源的重要材料之一,负电子亲和势砷化镓(NEA‐GaAs)光阴极发射的电子束亮度一直以来都是国际上的研究热点。热发射度是电子束能够实现的发射度下限,测量热发射度有利于确定注入器能否提供高亮度的电子束。本文理论计算了 NEA‐GaAs光阴极热发射度数值范围,并基于中国工程物理研究院自由电子激光相干强太赫兹源(FEL‐T Hz )装置,在28 fC的极低电荷量下,采用螺线管扫描法初步测量了NEA‐GaAs光阴极的热发射度。结果显示,NEA‐GaAs光阴极的热发射度为(0.603±0.002)μm/m m。%As one of the most important high average power electron source materials , the high brightness negative electron affinity (NEA ) gallium arsenide (GaAs) photo‐cathode becomes a researcher focus nowadays .The thermal emittance is the lower limit of emittance ,and its measurement is of great importance to determine the brightness that an injector can provide .In this paper ,based on the terahertz free electron laser (FEL‐T Hz) facility in China Academy of Engineering Physics ,some efforts were made to calculate and measure the thermal emittance of NEA‐GaAs photocathode . Under ultra‐low charge of 28 fC NEA‐GaAs photocathode ,the thermal emittance is (0.603 ± 0.002)μm/mm by the solenoid scan method .

  11. Efficient injection of spin-polarized electrons from manganese arsenide contacts into aluminum gallium arsenide/gallium arsenide spin LEDs (United States)

    Schweidenback, Lars

    In this thesis we describe two spectroscopic projects project on semiconductor heterostructures, as well as putting together and testing a micro-photoluminescence/7 tesla magnet system for the study of micron size two-dimensional crystals. Below we discuss the three parts in more detail. i) MnAs-based spin light emitting diodes. We have studied the injection of spin-polarized electrons from a ferromagnetic MnAs contact into an AlGaAs(n)/GaAs(i)/AlGaAs(p) n-i-p light emitting diode. We have recorder the emitted electroluminescence as function of magnetic field applied at right angles to the device plane in the 7-300 K temperature range. It was found that at 7 Kelvin the emitted light is circularly polarized with a polarization that is proportional to the MnAs contact magnetization with a saturation value of 26% for B > 1.25 tesla. The polarization persists up to room temperature with a saturation value of 6%. ii) Optical Aharonov-Bohm effect in InGaAs quantum wells. The excitonic photoluminescence intensity from InGaAs quantum wells as function of magnetic field exhibits two local maxima superimposed on a decreasing background. The maxima are attributed to the optical Aharonov-Bohm effect of electrons orbiting around a hole localized at the center of an Indium rich InGaAs islands detected by cross sectional scanning tunneling microscopy. Analysis of the position of the maxima yields a value of the electron orbit radius. iii) Micro-Photoluminescence. We have put together a micro-photoluminescence /7 tesla system for the study of two dimensional crystals. The samples are placed inside a continuous flow cryostat whose tail is positioned in the bore of the 7 tesla magnet. A microscope objective is used to focus the exciting laser light and collect the emitted photoluminescence. The system was tested by recording the photoluminescence spectra of WS2 and WSe 2 monolayers at T = 77 K.

  12. Nuclear Magnetic Resonance in Gallium Arsenide. (United States)


    dependance of the second moment of the line- shapes on the orientation of the crystal in the field supports a continuous solid model of the strain, in which...visible in the lightly doped sample. Hester, Sher, Soest, and Weisz have shown that, assuming first order broadening, the angular dependance of the second...this study. The second moments found agreed qualitatively with those found by Hester, Sher, Soest, and Weisz in their 3angular dependance . However

  13. Deep Impurity States in Gallium Arsenide. (United States)


    density of electron states, E, is the ree -eleroi Form. enerry. E, . =(/ 2 ex F, , - > + ! . is the forbidden band gap, and E, is the averave or Penn...Ledebo, J. Appl. Phys. 46, was observed in the bulk sample C. 2155 (1975). 5H.J. Stocker, E. Bauser, and Laurence Schmidt Figure 6 finally shows the

  14. Gallium Arsenide and Related Compounds, 1986. (United States)


    California at Santa Barbara , for his contributions to hot-electron effects, the Gunn Oscillator, and III - V heterojunction devices including the... Caper )o p A11k ’I T~’I N-H Lboratoiets Mimarrai% ill. N.J (;70)71 lh.-.tra1 t ml’.Ii"’i"~t. lh’~t’~’ I)(- it first rt’alizaioni of a t’(’"mmianit... Barbara , CA 93106 J. R. Abelson and T. W. Sigmon Stanford Electronics Laboratories Stanford University, Stanford, CA 94305 Abstract Epitaxial regrowth

  15. Complex vibrations in arsenide skutterudites and oxyskutterudites (United States)

    Bridges, F.; Car, B.; Sutton, L.; Hoffman-Stapleton, M.; Keiber, T.; Baumbach, R. E.; Maple, M. B.; Henkie, Z.; Wawryk, R.


    The local structure of two skutterudite families—Ce M4As12 (M =Fe , Ru, Os) and L n Cu3Ru4O12 (L n =La , Pr, and Nd)—have been studied using the extended x-ray absorption fine structure (EXAFS) technique with a focus on the lattice vibrations about the rare-earth "rattler atoms" and the extent to which these vibrations can be considered local modes, with the rattler vibrating inside a nearly rigid cage. X-ray absorption data at all the metal edges were collected over a temperature range of 4 to 300 K and analyzed using standard procedures. The pair distances from EXAFS results agree quite well with the average structure obtained from diffraction. The cage structure is formed by the M and As atoms in Ce M4As12 and by Cu, O, and Ru atoms in L n Cu3Ru4O12 . Although some of the bonds within the cage are quite stiff (correlated Debye temperatures, θcD, are ˜500 K for Ce M4As12 and above 800 K for L n Cu3Ru4O12 ), we show that the structure is not completely rigid. For the rattler atom the nearest-neighbor pairs have a relatively low Einstein temperature, θE:˜100 - 120 K for Ce-As and ˜130 K for L n -O . Surprisingly, the behaviors of the second-neighbor pairs are quite different: for Ce M4As12 the second-neighbor pairs (Ce -M ) have a weaker bond while for L n Cu3Ru4O12 the L n -Ru second-neighbor pair has a stiffer effective spring constant than the first-neighbor pair. In addition, we show that the As4 or CuO4 rings are relatively rigid units and that their vibrations are anisotropic within these cubic structures, with stiff restoring forces perpendicular to the rings and much weaker restoring forces in directions parallel to the rings. Consequently vibrations of the rings may also act as "rattlers" and help suppress thermal conductivity. In general neither the rigid-cage approximation nor the simple reduced-mass approximation are sufficient for describing rattler behavior.

  16. Phonon heat transport in gallium arsenide

    Indian Academy of Sciences (India)

    Richa Saini; Vinod Ashokan; B D Indu; R Kumar


    The lifetimes of quantum excitations are directly related to the electron and phonon energy linewidths of a particular scattering event. Using the versatile double time thermodynamic Green’s function approach based on many-body theory, an ab-initio formulation of relaxation times of various contributing processes has been investigated with newer understanding in terms of the linewidths of electrons and phonons. The energy linewidth is found to be an extremely sensitive quantity in the transport phenomena of crystalline solids as a collection of large number of scattering processes, namely, boundary scattering, impurity scattering, multiphonon scattering, interference scattering, electron–phonon processes and resonance scattering. The lattice thermal conductivities of three samples of GaAs have been analysed on the basis of modified Callaway model and a fairly good agreement between theory and experimental observations has been reported.

  17. Excitation and De-Excitation Mechanisms of ER - Gallium Arsenide and Aluminum Gallium Arsenide (United States)

    Elsaesser, David William

    Electrical and optical characterization have been performed on GaAs and Al_{rm x}Ga_{rm 1-x} As samples doped with Er either by ion implantation and during Molecular Beam Epitaxial (MBE) growth. The electrical techniques of Deep Level Transient Spectroscopy (DLTS) and Temperature-Dependent Hall Effect (TDH) indicated that Er primarily formed two electrically active centers in both materials. The first center gave rise to a hole trap at E_{rm v} + 35 meV, which was thought to be due to Er substituting for a Ga atom (Er_{rm Ga}) and giving rise to an isoelectronic impurity potential. The second center also gave rise to a hole trap at approximately E_{rm v} + 360 meV, and was attributed to an Er atom occupying an interstitial position (Er_{rm i}). Annealing studies performed on Er-implanted GaAs indicated that the Er_{rm Ga} center preferentially formed at higher annealing temperatures (> 850^circC), with the Er_{rm i} reaching a maximum concentration at an annealing temperature of around 750^circC. Additionally, optical characterization performed by Photoluminescence (PL) measurements showed that the Er_{ rm i} center gave much stronger Er-related emissions due to the transition ^4I _{13/2} to ^4 I_{15/2} in the unfilled Er^{3+}-4f shell than was observed for 4f-emissions associated with the Er_{rm Ga} center. Mechanisms for the excitation and de-excitation of the Er-4f shell in GaAs, consistent with all experimental observations, were proposed. DLTS measurements also detected the presence of a large concentration of Ga-antisite (Ga_ {rm As}) defects as well as As-interstitial (As_{rm i}) defects. Based upon reports of Er^{3+} -4f emissions from four distinct Er-centers, two other likely Er-centers were proposed, Er_{rm Ga}-Ga_{rm As} and Er_{rm Ga} -As_{rm i}. Finally, electrical and optical characterization of Er-doped MBE -grown Al_{0.5}Ga _{rm 0.5}As indicated that the solubility limit of Er in this material was possibly as high as 2 times 10^ {19} cm^{-3}, as compared to 7 times 10 ^{17} cm^ {-3} in GaAs. This may explain the observation that Er^{3+}-4f emissions are more intense in AlGaAs compared to GaAs.

  18. Electroluminescence Studies on Longwavelength Indium Arsenide Quantum Dot Microcavities Grown on Gallium Arsenide (United States)


    been calculated by solving the three dimensional effective mass single particle Schrodinger equation and are shown in Figure 2.19 [23...particle Schrodinger equation and is shown in Figure 2.20 for various sized pyramidal dots. Over a limited range of sizes the transition energy

  19. Clinical evaluation of dentin hypersensitivity treatment with the low intensity Gallium-Aluminum-Arsenide laser - AsGaAl Avaliação clínica do tratamento da hiperestesia dentinária com laser de baixa potência de Arseniato de Gálio-Alumínio - AsGaAl

    Directory of Open Access Journals (Sweden)

    Luciana Chucre Gentile


    Full Text Available The dentin hypersensitivity is a painful condition rather prevalent in the general population. There are several ways of treatment for such condition, including the low intensity lasers. The proposal of this study was to verify the effectiveness of the Gallium-Aluminum-Arsenide diode laser in the treatment of this painful condition, using a placebo as control. MATERIALS AND METHODS: Thirty-two patients were selected, 22 females and 10 males, with ages ranging from 20 to 52 years old. The 32 patients were randomly distributed into two groups, treated and control; the sample consisted of 68 teeth, 35 in the treated group and 33 in the control group. The treated group was exposed to six laser applications with intervals from 48 to 72 hours, and the control group received, as placebo, applications of a curing light. RESULTS: A significant reduction was observed in the pain condition between the initial phase and after six laser applications; however, such reduction could also be observed for the control group exposed to the placebo. CONCLUSION: Therapy with the low intensity Gallium-Aluminum-Arsenide laser - AsGaAl induces a statistically significant reduction in the painful condition after each application and between the beginning and end of treatment, although there was no statistically significant difference between the treated group (laser and the control group (placebo at the end of treatment and after the mediate evaluation results (after 6 weeks, this way impairing the real measurement of laser effectiveness and placebo effect.A hiperestesia dentinária trata-se de uma condição dolorosa bastante prevalente nas populações mundiais. Várias são as modalidades de tratamento para tal condição, entre elas, os lasers de baixa potência. A proposta deste estudo foi a de verificar a efetividade do laser de diodo de Arseniato de Gálio-Alumínio no tratamento desta condição dolorosa, utilizando-se um placebo como controle. MATERIAIS E M

  20. Gallium arsenide based surface plasmon resonance for glucose monitoring (United States)

    Patil, Harshada; Sane, Vani; Sriram, G.; Indumathi, T. S; Sharan, Preeta


    The recent trends in the semiconductor and microwave industries has enabled the development of scalable microfabrication technology which produces a superior set of performance as against its counterparts. Surface Plasmon Resonance (SPR) based biosensors are a special class of optical sensors that become affected by electromagnetic waves. It is found that bio-molecular recognition element immobilized on the SPR sensor surface layer reveals a characteristic interaction with various sample solutions during the passage of light. The present work revolves around developing painless glucose monitoring systems using fluids containing glucose like saliva, urine, sweat or tears instead of blood samples. Non-invasive glucose monitoring has long been simulated using label free detection mechanisms and the same concept is adapted. In label-free detection, target molecules are not labeled or altered, and are detected in their natural forms. Label-free detection mechanisms involves the measurement of refractive index (RI) change induced by molecular interactions. These interactions relates the sample concentration or surface density, instead of total sample mass. After simulation it has been observed that the result obtained is highly accurate and sensitive. The structure used here is SPR sensor based on channel waveguide. The tools used for simulation are RSOFT FULLWAVE, MEEP and MATLAB etc.

  1. Strategic Review of Arsenide, Phosphide and Nitride MOSFETs


    Gourab Dutta; Palash Das; Partha Mukherjee; Dhrubes Biswas


    Metal oxide semiconductor field effect transistor used as an amplifier and switch uses Si primarily as a channel material for its very stable oxide SiO2. In-spite of many advantages there are some restrictions for Si MOS, so the world is approaching towards compound semiconductor for higher frequency and current. The development of compound semiconductor metal oxide semiconductor is also facing critical problems due to the lack of availability of proper gate oxide material. Research is being ...

  2. Nickel-gallium arsenide high-voltage power Schottky diodes (United States)

    Ashkinazi, G.; Hadas, Tz.; Meyler, B.; Nathan, M.; Zolotarevski, L.; Zolotarevski, O.


    A power GaAs Schottky diode (SD) with a chemically deposited Ni barrier was designed, fabricated and tested. The diode has a reverse breakdown voltage VBR of 140 V, forward voltage drop VF (at 50 A/cm 2) of 0.7 V at 23°C, 0.5 V at 150°C and 0.3 V at 250°C, and reverse leakage current densities jR (at -50 V) of 0.1 μA/cm 2 at 23°C and 1 mA/cm 2 at 150°C. Calculated forward and reverse I- V characteristics using a simple self-consistent computer model are in good agreement with measured values. Calculated characteristics of a silicon SD with identical structure parameters, using the same model, show much poorer VBR, VF and jR values. The theoretical maximum value of VBR is physically limited by the largest allowed VF. For a V Fof ⋍1.6 V, V BR.maxis ⋍200 V in Si and ⋍800 simple technology allows manufacturing of large area GaAs Schottky diodes with average currents up to V in GaAs SDs. Our relatively 100 A.

  3. Resonance Raman Scattering Studies of Gallium - - Aluminum-Arsenide Superlattices. (United States)

    Gant, Thomas Andrew

    We have made resonance Raman scattering studies of folded LA phonons and quantized LO phonons in several GaAs-AlAs superlattices. The motivation for this work was to study the electronic structure and the electron -phonon interaction in these structures. The samples were not intentionally doped. The Raman spectra of optic phonons were usually taken at a temperature of 10 K or less. The folded acoustic phonon work was taken at temperatures ranging from 200-300 K in order to enhance the scattering by the thermal factor. Two samples in particular have received very close attention: sample 2292 (50 A GaAs- 20 A AlAs) and sample 3250 (20 A GaAs- 50 A AlAs). In sample 2292 we have made resonance studies of the folded LA phonons and the GaAs -like confined LO_2 mode near the second heavy hole exciton. The results on the folded acoustic phonons show a very strong resonance enhancement for the second order folded phonons, but very little for the first order. An interference between two different scattering channels (the n = 1 light hole and the n = 2 heavy hole subbands) seems to be responsible for this effect. The resonance profile for the LO_2 confined optic phonon in sample 2292 shows 4 peaks in the region from 1.8 eV to 2.05 eV. We have studied the dependence of this resonance profile on the power density. A higher power density was achieved by using the same laser power with a tighter focus. At the higher power density the peak at 1.93 eV (formerly the strongest peak present) vanished. This "bleaching" effect is related to screening due to the higher carrier density. In sample 3250 we have studied the polarization dependence of the resonance profiles of four peaks (LO _2, LO_4, LO_6, and an interface mode) near the lowest direct gap. The A_1 symmetry confined LO modes are seen in both polarized and depolarized geometries, in violation of the usual selection rule (polarized). A mechanism is proposed to explain this result, which has been previously observed by other workers.

  4. Photoelastic coupling in gallium arsenide optomechanical disk resonators

    CERN Document Server

    Baker, Christopher; Nguyen, Dac-Trung; Andronico, Alessio; Ducci, Sara; Leo, Giuseppe; Favero, Ivan


    We analyze the magnitude of the radiation pressure and electrostrictive stresses exerted by light confined inside GaAs semiconductor WGM optomechanical disk resonators, through analytical and numerical means, and find the electrostrictive force to be of prime importance. We investigate the geometric and photoelastic optomechanical coupling resulting respectively from the deformation of the disk boundary and from the strain-induced refractive index changes in the material, for various mechanical modes of the disks. Photoelastic optomechanical coupling is shown to be a predominant coupling mechanism for certain disk dimensions and mechanical modes, leading to total coupling g$_{om}$ and g$_0$ reaching respectively 3 THz/nm and 4 MHz. Finally, we point towards ways to maximize the photoelastic coupling in GaAs disk resonators, and we provide some upper bounds for its value in various geometries.

  5. Spontaneous low frequency oscillation studies in gallium arsenide fast photoconductors

    CERN Document Server

    Foulon, F; Brullot, B; Petit, P; Bergonzo, P; Rubbelynck, C


    We have investigated the influence of spontaneous low frequency oscillations (LFO, f approx 0.01 Hz) occurring at high electric field (>1 kV/cm) in resistive photoconductors (PCD) made from semi-insulating GaAs on the response of the PCDs under pulsed gamma-ray irradiation (E approx 1.2 MeV, tau sub F sub W sub H sub M =30 ns). The PCDs were fabricated using GaAs from five commercially available sources. The PCDs were irradiated with fission neutrons in order to reduce their response time down to less than 100 ps. The amplitude of the LFOs was found to be related to the carrier lifetime, and thus defect concentration in the GaAs material. It was larger for material exhibiting high carrier lifetime. Increasing the localised defect concentration, such as EL2 type defect, through GaAs irradiation with fission neutrons was found to decrease the amplitude of the LFOs. PCDs irradiated at high neutron doses (>1x10 sup 1 sup 5 neutrons/cm sup 2) showed no LFOs. It is suggested that interactions between the propagatin...

  6. Ion-beam induced isolation of gallium arsenide layers (United States)

    Sengupta, D.; Zemanski, J. M.; Williams, J. S.; Johnson, S. T.; Pogany, A. P.


    Epitaxial (n +-n) layers on semi-insulating GaAs samples were implanted with 60 keV He + ions at elevated temperatures. Samples were analysed to provide sheet resistivity, Hall mobility and carrier depth profiles using electrical measurement techniques and damage distributions using TEM and Rutherford backscattering and channeling. All of the data were correlated to identify the optimum conditions to achieve electrical isolation. Elevated temperature He + implants have been found to create uniform, single step isolation of GaAs layers. Isolation of the GaAs layers can be enhanced and stabilised further by a suitable post-implantation annealing process.

  7. Investigation of spin transport and accumulation in aluminum gallium arsenide (United States)

    Misuraca, Jennifer

    This dissertation describes spin injection, transport, and detection experiments from Fe electrodes into a bulk AlGaAs channel. This semiconducting alloy is one of a class of persistent photoconductors, chosen as the spin transport medium because its carrier density can be tuned in a controlled manner via photoexcitation through the metal to insulator transition (MIT) in situ. This allows one to determine the dependence of spin lifetime on a variety of external parameters including carrier density, all on one sample. This research represents the first electrical spin-dependent measurements in this material and describes the dependence of the Hanle signal size and spin lifetime on bias, temperature, and carrier density. The photoexcitation needed to change the carrier density in this material comes from an infrared light-emitting diode (IR LED). The first step of this project was to characterize the new, highly Si doped Al0.3Ga 0.7As heterostructures, in order to determine how the illumination of the sample will affect the parameters of the material. To complete this study, Hall crosses were fabricated from the AlGaAs material and the transport properties were measured between 350 mK and 165 K. The resistivity, carrier density, and mobility were determined as a function of temperature for a variety of different illumination times. From this data, the MIT, scattering mechanisms, and the shape of the band tail of the density of states (DOS) were investigated. In fact, this is the first work to electrically probe the DOS in AlGaAs. Once the materials were characterized, they were used to fabricate lateral spin transport devices. Spin transport and accumulation were studied in detail via Hanle effect measurements, which measure the dephasing of electron spins in a perpendicular magnetic field. From these measurements, the spin lifetime of the material can be calculated, and is in the nanosecond range for all measured carrier densities. The spin lifetimes are measured using three distinct measurement configurations which all give consistent results. The dependence of spin lifetime and Hanle signal size are reported as a function of bias, temperature, and carrier density. This is the first spin transport experiment using a persistently photoconductive material as the spin transport channel in order to change the carrier density of the material in situ. The research in this dissertation successfully provides a framework for the continuation of spin injection and detection studies in this and other alloy semiconductors, and provides insight into how the spin lifetime depends on the doping levels in semiconductors.

  8. Laser Induced Chemical Vapor Epitaxial Growth of Gallium Arsenide Films. (United States)


    heteroepitaxial growth of GaAs. The important process parameters are: the substrate surface cleanliness , substrate temperature, composition and flow rate of the...hydrogen was used as the diluent and win.dw purging gas [9]. The important process parameters are: the substrate surface cleanliness , substrate temperature

  9. Glow Discharge Optical Spectroscopy of Ion Implanted Gallium Arsenide. (United States)


    PECVD processes are silane (SiH4 ) plus either 47 t - Im ammonia (NH 3 ) or nitrogen (N2 ) or both. The chemical reactions are, 3SiH4+2N 2-Si3N 4+6H 2...Physics, 44:5183-5184 (Nov 1973). 68 I i . 13. Sawyer, R., Experimental Spectroscopy, New York: Dover Publication, Inc. (1963) 14. Kerm , W., R. Rosler...composition as functions of the follow- ing parameters: flow, pressure, substrate temperature, and RF power. Kerm , et al., (Ref 14) studied films grown

  10. Gallium Arsenide Pilot Line for High Performance Components (United States)


    4K SRAM I, where there are about 100,000 isolated vias. 3.5 Advanced Technology (A. G. Baca, A. I. Faris, R. M. Havrilla , S. E. Lengle, D. D. Manchon...Aluminum Interconnects (R. J. Shul, A. G. Baca, R. M. Havrilla , S. E. Lengle)........... C-3 2.2 Process Tester Characterization (A. G, Baca, D. D. Manchon...TECHNOLOGY 2.1 Aluminum Interconnects (R. J. Shul, A. G. Baca, R. M. Havrilla , S. E. Lengle) The aluminum interconnect metallization process requires

  11. Mechanism of Current Oscillations in Gallium Arsenide Photoconductive Semiconductor Switches

    Institute of Scientific and Technical Information of China (English)

    TIAN Li-Qiang; SHI Wei


    Semi-insulating photoconductive semiconductor switch with an electrode gap of 4mm, triggered by a laser pulse with energy of 0.5mJ, and applied bias of 2.5kV, the periodicity current oscillation with a cycle of 12ns is obtained. It is indicated that the current oscillation is one mode of transferred electron effect, namely quenched domain mode. This mode of trans-electron oscillator is obtained when the instantaneous bias electric field drops below the sustaining field (the minimum electric field required to support the domain) before the domain reaches the anode, which leads to the domain disappears somewhere in the bulk of the switch and away from the ohmic contacts. We mainly analyse the time-dependent characteristic of the mode, the theoretical analysis results are in excellent agreement with the experiment.

  12. High Energy Electron Radiation Degradation of Gallium Arsenide Solar Cells. (United States)


    relative spectral output of the Kratos source was determined. This procedure may be algebraically verified since the cell output current, i, is equal...A (cm2), then a unique voltage may be calculated for given values of 0 and C. Algebraically , this equation may be written as ~q A 77e ____ __ 8) C...position as necessary to achieve proper voltage. (d) Place solar cell on test block using plastic tweezers. (e) Start test program by typing " BASICA

  13. Photoluminescence Study of Ion Implantation Damage in Gallium Arsenide. (United States)


    appreciation is finally extended to my family, whose active moral sup- port was of great comfort during this trying period. Manual V. Key This thesis...Mounted directly behind the sample area on the cylinder was a pre- viously calibrated silicon diode which was used as a tempera - ture sensor. Also on...discriLminator- was connected to an in-house-built interface 26 - -j which amplif ied, stre- tcIed and inv(erted the2 signal properly conditioning it for

  14. High-performance fused indium gallium arsenide/silicon photodiode (United States)

    Kang, Yimin

    Modern long haul, high bit rate fiber-optic communication systems demand photodetectors with high sensitivity. Avalanche photodiodes (APDs) exhibit superior sensitivity performance than other types of photodetectors by virtual of its internal gain mechanism. This dissertation work further advances the APD performance by applying a novel materials integration technique. It is the first successful demonstration of wafer fused InGaAs/Si APDs with low dark current and low noise. APDs generally adopt separate absorption and multiplication (SAM) structure, which allows independent optimization of materials properties in two distinct regions. While the absorption material needs to have high absorption coefficient in the target wavelength range to achieve high quantum efficiency, it is desirable for the multiplication material to have large discrepancy between its electron and hole ionization coefficients to reduce noise. According to these criteria, InGaAs and Si are the ideal materials combination. Wafer fusion is the enabling technique that makes this theoretical ideal an experimental possibility. APDs fabricated on the fused InGaAs/Si wafer with mesa structure exhibit low dark current and low noise. Special device fabrication techniques and high quality wafer fusion reduce dark current to nano ampere level at unity gain, comparable to state-of-the-art commercial III/V APDs. The small excess noise is attributed to the large difference in ionization coefficients between electrons and holes in silicon. Detailed layer structure designs are developed specifically for fused InGaAs/Si APDs based on principles similar to those used in traditional InGaAs/InP APDs. An accurate yet straightforward technique for device structural parameters extraction is also proposed. The extracted results from the fabricated APDs agree with device design parameters. This agreement also confirms that the fusion interface has negligible effect on electric field distributions for devices fabricated from high quality fusion materials. The feasibility of fused InGaAs/Si APD for analog systems is also explored. Preliminary two-tone measurement shows that a moderately high dynamic range of 70 dBc/Hz1/2 for broadband Spur Free Dynamic Range (SFDR) or 82 dBc/Hz2/3 suboctave SFDR, up to 50 muA of optical current, can be achieved. The theoretical analyses of SNR show that fused InGaAs/Si APD receivers can provide larger Signal-to-Noise Ratio (SNR) than their III/V counterparts.

  15. Chemical mechanical polishing of Indium phosphide, Gallium arsenide and Indium gallium arsenide films and related environment and safety aspects (United States)

    Matovu, John Bogere

    As scaling continues with advanced technology nodes in the microelectronic industry to enhance device performance, the performance limits of the conventional substrate materials such as silicon as a channel material in the front-end-of-the-line of the complementary metal oxide semiconductor (CMOS) need to be surmounted. These challenges have invigorated research into new materials such as III-V materials consisting of InP, GaAs, InGaAs for n-channel CMOS and Ge for p-channels CMOS to enhance device performance. These III-V materials have higher electron mobility that is required for the n-channel while Ge has high hole mobility that is required for the p-channel. Integration of these materials in future devices requires chemical mechanical polishing (CMP) to achieve a smooth and planar surface to enable further processing. The CMP process of these materials has been associated with environment, health and safety (EH&S) issues due to the presence of P and As that can lead to the formation of toxic gaseous hydrides. The safe handling of As contaminated consumables and post-CMP slurry waste is essential. In this work, the chemical mechanical polishing of InP, GaAs and InGaAs films and the associated environment, health and safety (EH&S) issues are discussed. InP removal rates (RRs) and phosphine generation during the CMP of blanket InP films in hydrogen peroxide-based silica particle dispersions in the presence and absence of three different multifunctional chelating carboxylic acids, namely oxalic acid, tartaric acid, and citric acid are reported. The presence of these acids in the polishing slurry resulted in good InP removal rates (about 400 nm min-1) and very low phosphine generation (isolation structures was planarized and scratches, slurry particles and smearing of InP were absent. Additionally, wafers polished at pH 6 showed very low dishing values of about 12-15 nm, determined by cross sectional SEM. During the polishing of blanket GaAs, GaAs RRs were negligible with deionized water or with silica slurries alone. They were relatively high in aq. solutions of H2O2 alone and showed a strong pH dependence, with significantly higher RRs in the alkaline region. The addition of silica particles to aq. H2O2 did not increase the GaAs RRs significantly. The evolution of arsenic trihydride (AsH3) during the dissolution of GaAs in aq. H2O2 solution was similarly higher in the basic pH range than in neutral pH or in the acidic pH range. However, no AsH3 was measured during polishing, evidently because of the relatively high water solubility of AsH3. The work done on InGaAs polishing shows that InGaAs RR trends are different from those observed for InP or GaAs. InGaAs RRs at pH 2 are higher than those at pH 10 and highest at pH 4. Dissolution rates (DRs), Fourier Transform Infrared Spectroscopy (FTIR), contact angles, X-Ray Photoelectron Spectroscopy (XPS), X-Ray Fluorescence Spectroscopy (XRF), zeta potential measurements and calculated Gibbs free energy changes of the reactions involved during polishing and gas formation were used to discuss the observed RRs and hydride gas generation trends and to propose the reaction pathways involved in the material removal and in hydride gas generation mechanisms.

  16. Development of a Multi-layer Anti-reflective Coating for Gallium Arsenide/Aluminum Gallium Arsenide Solar Cells (United States)


    of light into power is more efficient than silicon. This gives GaAs solar cells the advantage in low-light conditions. Further, with their multi...of the solar cell actually end up in the active region able to convert photon energy into electrical energy . Several mechanisms contribute to energy ...and therefore, generate more photocurrent in the solar cell. As the photon having energy equal to or greater than the bandgap travels into the

  17. Substrate engineering for defect reduction and microstructure control in the growth of indium arsenide on (100) gallium arsenide (United States)

    Ganesan, Suryanarayanan

    The development of devices based on InAs, GaSb, and AlSb, semiconductors that possess narrow band-gaps and 0.61 nm lattice parameters, has been limited by the defects that ensue in epitaxial films that typically are grown on commercial semi-insulating, but 7% lattice-mismatched, GaAs substrates. The studies described in this dissertation investigate the application of a lateral epitaxial overgrowth technique for defect reduction and microstructure control to the InAs/GaAs heteroepitaxial system by exploring the development of microstructure at various stages of island and film growth in conventional and lateral overgrowth epitaxy (that is, on unpatterned and mask-patterned substrates, respectively). For a range of growth conditions, InAs films on unpatterned (100) GaAs substrates exhibit not only the threading dislocations characteristic of largely mismatched epitaxial films, but also systematic tilting within micron-scale InAs domains. Alteration of the pattern and magnitude of the tilt achieved by varying the growth conditions and/or introducing mask-patterned substrates suggest that not only chemical and kinetic, but also physical constraints can direct microstructural evolution during growth. Backscattered electron Kikuchi pattern-based orientation imaging was used to investigate the origin of the improved epitaxial alignment that is realized when InAs films were grown on mask-patterned (100) GaAs substrates. The island size at coalescence was shown to be critical in determining whether a single or two-fold, four-fold or six-fold epitaxial orientation relationship(s) is (are) present in the film. The evolution of tilt with increasing island size is attributed to the particulars of the misfit dislocation network that forms, which appears to evolve in this epitaxial system as the island grows, in accordance with a model proposed by Spencer and Tersoff [1,2]. Sub-micron (˜0.5 mum or less) island sizes at coalescence appear to lead to a single orientation aligned with the GaAs. This work shows that spatial constraints imposed at the early stages of growth, in this case through use of a mask-patterned substrate, can be used to promote coalescence at small island size as an alternative or parallel approach to setting growth conditions (temperature, precursor stoichiometry, etc.) in order to control the defect nucleation and microstructure. References. [1]. B.J. Spencer, and J. Tersoff, Appl. Phys. Lett. 77 (1997) 2533. [2]. B.J. Spencer, and J. Tersoff, Phys. Rev. B63 (2001) 205424.

  18. Theoretical Studies of High Energy Transport of Electrons and Holes in Gallium Arsenide, Indium Phosphide, Indium Arsenide, and Gallium Antimonide. (United States)


    interest and support in many aspects of this work. The author would also like to thank Professors N. Holonyak Jr., G. * Stillman, and B. Wheeler for...York, 1958. [321 R. P. Feynman , Statistical Mechanics, A Set of Lectures, W. A. * -. Benjamin, Reading Ma., 1972. [33] G. 3. lafrate, "Quantum transport

  19. Acoustic Phonon Scattering in Modulation Doped Aluminum sub x Gallium sub (1-x) Arsenide/Gallium Arsenide Heterojunctions (United States)


    of the distribution function through Monte Carlo simula- • tions of a two-dimensional electron gas in an AlxGaj-xAs/GaAs heterostructure confirm this...shown in Fig. 4.1b). The broadening may be regarded somewhat imprecisely as arising from the Heisenberg uncertainty principle, ,Er t, where AE is a...significant energy dependence of the den- ,,. sity of states. From the Heisenberg uncertainty principle we see that the broadening of the Landau levels

  20. Radiant Power Degradation of Silicon-Doped Gallium Arsenide and Gallium Aluminum Arsenide Infrared Light-Emitting Diodes. (United States)


    measured using a United Detector Technology Model 61AC (UDT61AC) Optometer , a United Detector Technol- ogy Model 2575R (UDT2575R) Integrating Sphere...the opening of the integrating sphere. Be sure both the integrating sphere and the diode are stationary. 3. Check the optometer . Be sure the CH 10-2. (You have now compensated the optometer for ambient light). The display may still read something on the 10-2 MULTIPLIER setting. If it does

  1. Photoinduced Dissociation Of N-alkyl Bromides On Gallium Arsenide(110) And Gallium Arsenide(100) Electron And Fragment Dynamics

    CERN Document Server

    Khan, K A


    In this study we investigate the UV-initiated electron transfer and dissociation fragment dynamics of selected n-alkyl bromides physisorbed on single crystals of GaAs. By systematically varying different chemical and structural parameters of the adsorbate/substrate system we explore a number of fundamental questions regarding the basic physics and chemistry of photochemical processes on surfaces. Monolayers of methyl, ethyl and propyl bromide were deposited on the (110), Ga-terminated (100) and As- terminated (100) surfaces of GaAs without thermal decomposition at 80 K. Substrate-mediated electron transfer to the molecule, induced by exposure to UV light at 193, 248 and 351 nm, causes C-Br bond cleavage. The electron transfer dynamics of this mechanism are examined as a function of wavelength and molecular complexity of the adsorbate to better understand the flow of energy and charge across the adsorbate/substrate interface. The photodynamics of the alkyl fragments are studied using mass-, energy- and angle-r...

  2. Efeito da terapia com laser de arsenieto de gálio e alumínio (660Nm sobre a recuperação do nervo ciático de ratos após lesão por neurotmese seguida de anastomose epineural: análise funcional Effect of gallium-aluminum-arsenide laser therapy (660Nm on recovery of the sciatic nerve in rats following neurotmesis lesion and epineural anastomosis: functional analysis

    Directory of Open Access Journals (Sweden)

    FA Reis


    Full Text Available CONTEXTUALIZAÇÃO: As lesões nervosas periféricas podem comprometer atividades diárias de um indivíduo e resultam em perda da sensibilidade e motricidade do território inervado. OBJETIVO: Com o intuito de acelerar os processos regenerativos, objetivou-se analisar a influência da aplicação do laser de arsenieto de gálio e alumínio (AsGaAl, 660Nm sobre a recuperação funcional do nervo ciático de ratos. MATERIAIS E MÉTODOS: O nervo ciático de 12 ratos Wistar foi submetido à lesão por neurotmese e anastomose epineural e divididos em dois grupos: controle e laserterapia. Após a lesão, utilizou-se o laser de GaAlAs, 660Nm, 4J/cm², 26,3mW, feixe de 0,63cm², em três pontos eqüidistantes sobre a lesão, por 20 dias. As impressões das pegadas dos animais foram obtidas antes e após (sete, 14 e 21 dias pós-operatórios o procedimento cirúrgico e calculou-se o índice funcional do ciático (IFC. RESULTADOS: A comparação do IFC não resultou em diferença significante (p>0,05 entre os grupos. CONCLUSÕES: Conclui-se que os parâmetros e métodos empregados na laserterapia demonstram resultados nulos sobre o IFC no período avaliado.CONTEXT: Peripheral nerve injuries result in sensory and motor losses in the innervated area and can hinder individuals’ daily activities. Objective: The objective was to analyze the influence of applying gallium-aluminum-arsenide (GaAlAs laser (660Nm on the functional recovery of the sciatic nerve in rats. METHODS: The sciatic nerve of 12 Wistar rats was subjected to injury consisting of neurotmesis and epineural anastomosis. The rats were divided into two groups: control and laser therapy. After the injury, a GaAlAs laser was used (660Nm, 4J/cm², 26.3mW and 0.63cm² beam at three equidistant points on the injury, for 20 days. Footprint impressions were obtained from the animals before and seven, 14 and 21 days after the surgical procedure and the sciatic functional index (SFI was calculated

  3. Bragg Reflector-Induced Increased Nonradiative Lifetime in Gallium Arsenide (GaAs)/Aluminum Gallium Arsenide (AlGaAs) Double Heterostructures (United States)


    the first 40 ns due to fast surface recombination as a result of screening of the electric field in the depletion region.12 After the first 40 ns, or...the substrate and the DHs increases the GaAs nonradiative lifetime. The fractional increase in the nonradiative lifetime varies with the MBE growth cell uses a GaAs/AlGaAs DH with a roughly 1–2 µm GaAs active region on top of an internal distributed Bragg reflector (BR) to take advantage of

  4. Multiband Gutzwiller theory of the band magnetism of LaO iron arsenide; Multiband Gutzwiller-Theorie des Bandmagnetismus von LaO-Eisen-Arsenid

    Energy Technology Data Exchange (ETDEWEB)

    Schickling, Tobias


    In this work we apply the Gutzwiller theory for various models for LaOFeAs. It was discovered in 2008 that doped LaOFeAs is superconducting below a temperature of T{sub c} = 28 K. Soon after that discovery, more iron based materials were found which have an atomic structure that is similar to the one of LaOFeAs and which are also superconducting. These materials form the class of iron-based superconductors. Many properties of this material class are in astonishing agreement with the properties of the cuprates. Therefore, studying this new material may promote our understanding of high-T{sub c} superconductivity. Despite great efforts, however, Density Functional Theory calculations cannot reproduce the small magnetic moment in the ground state of undoped LaOFeAs. Such calculations overestimate the magnetic moment by a factor 2-3. Within our Gutzwiller approach, we take additional local Coulomb correlations into account. We show that it is necessary to work with the iron 3d-orbitals and the arsenic 4p-orbitals to obtain a realistic description of LaOFeAs. For a broad parameter regime of the electronic interactions, we find a magnetic moment that is in the region of the experimentally observed values. We claim that the magnetic phase in LaOFeAs can be described as a spin-density wave of Landau-Gutzwiller quasi-particles.

  5. Superconductivity around quantum critical point in P-doped iron arsenides

    Energy Technology Data Exchange (ETDEWEB)

    Cao Guanghan, E-mail: [Department of Physics, Zhejiang University, Hangzhou 310027 (China); Jiang Shuai; Wang Cao; Li Yuke; Ren Zhi; Tao Qian; Dai Jianhui; Xu Zhuan [Department of Physics, Zhejiang University, Hangzhou 310027 (China)


    We demonstrate that, by the P/As substitution-without doping of charge carriers-in a FeAs-layer-based parent compound, superconductivity can be universally introduced. The maximum superconducting critical temperature (T{sub c}) of BaFe{sub 2}(As{sub 1-x}P{sub x}){sub 2} achieves 30 K. The P doping in LnFeAsO system (Ln = La and Sm) produces superconductivity below 11 K. The normal-state resistivity obeys linear temperature dependence and the normal-state Hall coefficient shows strong temperature dependence. These non-Fermi liquid behaviors suggest magnetic quantum criticality. The maximum T{sub c} values in different systems correlates strongly with the diagonal bondangle of Fe-As-Fe, implying the important role of the next-nearest-neighbor magnetic exchange coupling in iron pnictide superconductors.

  6. Ion implantation of silicon in gallium arsenide: Damage and annealing characterizations (United States)

    Pribat, D.; Dieumegard, D.; Croset, M.; Cohen, C.; Nipoti, R.; Siejka, J.; Bentini, G. G.; Correra, L.; Servidori, M.


    The purpose of this work is twofold: (i) to study the damage induced by ion implantation, with special attention to low implanted doses; (ii) to study the efficiency of annealing techniques — particularly incoherent light annealing — in order to relate the electrical activity of implanted atoms to damage annealing. We have used three methods to study the damage induced by ion implantation: (1) RBS (or nuclear reactions) in random or in channeling geometry (2) RX double crystal diffractometry and (3) electrical measurements (free carrier profiling). Damage induced by silicon implantation at doses >10 14at/cm 2 can be monitored by all three techniques. However, the sensitivity of RBS is poor and hence this technique is not useful for low implantation doses. As device technology requires dopant levels in the range of 5 × 10 12 atoms/cm 2, we are particularly interested to the development of analytical techniques able to detect the damage at this implantation level. The sensitivity of such techniques was checked by studying homogeneously doped (5 × 10 16 e -/cm 3) and semi-insulating GaAs samples implanted with 3 × 10 12 silicon atoms/cm 2 at 150 keV. The substrate temperature during implantation was 200°C. The damage produced in these samples and its subsequent annealing are evidenced by strong changes in X-ray double crystal diffraction spectra. This method hence appears as a good monitoring technique. Annealing of the implanted layers has been performed using incoherent light sources (xenon lamps) either in flash or continuous conditions. Reference samples have also been thermally annealed (850°C, 20 min in capless conditions). The results are compared, and the electrical carrier profiles obtained after continuous incoherent light irradiation indicate that the implanted silicon atoms are almost dully activated. The advantages and disadvantages of incoherent light irradiation are discussed (surface oxidation, surface damage) in comparison with standard thermal treatment.

  7. Soft-mask fabrication of gallium arsenide nanomembranes for integrated quantum photonics

    CERN Document Server

    Midolo, Leonardo; Kiršanskė, Gabija; Stobbe, Søren


    We report on the fabrication of quantum photonic integrated circuits based on suspended GaAs membranes. The fabrication process consists of a single lithographic step followed by inductively-coupled-plasma dry etching through an electron-beam-resist mask and wet etching of a sacrificial layer. This method does not require depositing, etching, and stripping a hard mask, greatly reducing fabrication time and costs, while at the same time yielding devices of excellent structural quality. We discuss in detail the procedures for cleaning the resist residues caused by the plasma etching and present a statistical analysis of the etched feature size after each fabrication step.

  8. A Gallium Arsenide MESFET Operational Amplifier for Use in Composite Operational Amplifiers (United States)


    F., Operational Amplifiers and Linear Integrated Circuits, 4th ed., Prentice Hall, 1991. 6. Sedra , A. S., and Smith , K. C., Microelectronic Circuits...7, pp. 1422-1429, July 1992. 17. McCamant, A. J., McCormack G. D., and Smith , D. H., "An Improved GaAs MESFET Model for SPICE," IEEE Transactions of...34Modeling Frequency Dependence of out Impedance of a Microwave MESFET at Low Frequencies," Electronics Letters, pp. 528-529, June 1985. 39. Smith , M. et al

  9. Design, Fabrication, and Characterization of 0.1 Micrometer Gallium Arsenide Mesfet's. (United States)

    Moore, Karen Elizabeth

    Very high performance 0.1 μm GaAs-based MESFET's have been designed, fabricated, and characterized in order to obtain an improved understanding of the full potential of these devices and the effects of process variations and layer structures on device performance. The FET's were fabricated with both "mushroom" and "gamma" gates using a bi-layer (PMMA/P(MMA-MAA)) electron beam lithography process. Process variations, including gate size, shape, and location, and gate recess depth, were systematically evaluated in GaAs FET's through DC and RF transistor performance, biased and un-biased equivalent circuit parameters, and transistor minimum noise figure. The bias dependence of the devices was studied using the results of cold de-embedding to determine intrinsic and extrinsic equivalent circuit values. These bias variations were related back to DC and RF device performance, in order to better understand how to optimize the biasing of a GaAs MESFET. The performance of the devices fabricated and tested was world class, with maximum f_sp {t}{'}s over 100 GHz, f_sp{max}{'}s over 150 GHz, and little sensitivity to process variations. This demonstrates the continued importance of GaAs and GaAs based MESFET's as high performance microwave devices with large scale commercial potential.

  10. Drift velocity oscillations in n-gallium arsenide at 77/sup 0/K

    Energy Technology Data Exchange (ETDEWEB)

    Matulionis, A.; Pozela, J.; Reklaitis, A.


    Electron relaxation after an instantaneous application of dc electric fields ranging from 10 V/cm to 1 kV/cm was studied numerically by a many-particle Monte Carlo method. The model takes into account polar optical, acoustic, and impurity scattering in the nonparabolic central valley. In the limited range of doping, electric field, and temperature the electron mean energy and drift velocity oscillate. The oscillation frequency is nearly proportional to the applied electric field (approximately 35 GHz at 60 V/cm). The oscillations are associated with a shuttle-type electron motion in the Debye sphere of k-space; they are not heavily damped if the electron runaway is favored inside and restrained outside the Debye sphere. (WDM)

  11. Gallium self-diffusion in gallium arsenide: A study using isotope heterostructures

    Energy Technology Data Exchange (ETDEWEB)

    Wang, Lei; Hsu, L.; Haller, E.E. [California Univ., Berkeley, CA (United States)]|[Lawrence Berkeley National Lab., CA (United States); Erickson, J.W. [Evans (Charles) and Associates, Redwood City, CA (United States); Fischer, A.; Eberl, K.; Cardona, M. [Max-Planck-Institut, Stuttgart (Germany)


    Ga self-diffusion was studied with secondary-ion mass spectroscopy in {sup 69}GaAs/{sup 71}GaAs isotope heterostructures grown by molecular beam epitaxy on GaAs substrates. Results show that the Ga self- diffusion coefficient in intrinsic GaAs can be described accurately with D = (43{+-}25 cm{sup 2}s{sup -1})exp(-4.24{+-}0.06 eV/k{sub B}T) over 6 orders of magnitude between 800 and 1225 C under As-rich condition. Experimental results combined with theoretical calculations strongly suggest Ga vacancy being the dominant native defect controlling the diffusion. No significant doping effects were observed in samples where the substrates were doped with Te up to 4x10{sup 17}cm{sup -3} or Zn up to 1x10{sup 19}cm{sup -3}.

  12. Computer Modeling, Characterization, and Applications of Gallium Arsenide Gunn Diodes in Radiation Environments

    Directory of Open Access Journals (Sweden)

    Wafaa Abd El-Basit


    Full Text Available The present paper reports on a trial to shed further light on the characterization, applications, and operation of radar speed guns or Gunn diodes on different radiation environments of neutron or γ fields. To this end, theoretical and experimental investigations of microwave oscillating system for outer-space applications were carried out. Radiation effects on the transient parameters and electrical properties of the proposed devices have been studied in detail with the application of computer programming. Also, the oscillation parameters, power characteristics, and bias current were plotted under the influence of different γ and neutron irradiation levels. Finally, shelf or oven annealing processes were shown to be satisfactory techniques to recover the initial characteristics of the irradiated devices.

  13. Structural features of indium antimonide quantum dots on the indium arsenide substrate

    Directory of Open Access Journals (Sweden)

    Liliya A. Sokura


    Full Text Available The properties of InSb/InAs quantum dots (QDs have been investigated by transmission electron microscopy (TEM. Specific features of diffraction contrast were discovered in plan-view TEM images of big (9–10 nm in height and 38–50 nm in diameter InSb QDs. To understand the origin of such distortions, a model of an InSb QD on InAs substrate containing a partial Frank dislocation (FD was developed and used for calculations of the displacement field and the subsequent diffraction image simulation of an InSb QD for the first time. The shape of the QD was established to have an insignificant influence on the magnitude of radial displacements. The insertion of a misfit defect (a partial Frank dislocation into the QD reduces the strain at the edges of the QD almost by 30%. The comparison of experimental and simulated data allowed us to explain the observed features of the moiré pattern in the image of a big InSb QD by the presence of a misfit defect at the QD-substrate interface.

  14. Digital Control of the Czochralski Growth of Gallium Arsenide-Controller Software Reference Manual (United States)


    response by means of two stacked PID controllers . The setpoint and actual data inputs of both controllers are to be connected in parallel; the output of...setpoints is obtained from two stacked PID controllers which permit to obtain a non- linear control response (compare chapter 4.5.1). The first PID...the "manu- al" setpoint can be chosen to lie close to the actually re- quired controller output, the PID controllers need only make small

  15. Origin of optical losses in gallium arsenide disk whispering gallery resonators

    CERN Document Server

    Parrain, David; Wang, Guillaume; Guha, Biswarup; Santos, Eduardo Gil; Lemaitre, Aristide; Senellart, Pascale; Leo, Giuseppe; Ducci, Sara; Favero, Ivan


    Whispering gallery modes in GaAs disk resonators reach half a million of optical quality factor. These high Qs remain still well below the ultimate design limit set by bending losses. Here we investigate the origin of residual optical dissipation in these devices. A Transmission Electron Microscope analysis is combined with an improved Volume Current Method to precisely quantify optical scattering losses by roughness and waviness of the structures, and gauge their importance relative to intrinsic material and radiation losses. The analysis also provides a qualitative description of the surface reconstruction layer, whose optical absorption is then revealed by comparing spectroscopy experiments in air and in different liquids. Other linear and nonlinear optical loss channels in the disks are evaluated likewise. Routes are given to further improve the performances of these miniature GaAs cavities.

  16. Indium arsenide as a material for biological applications: Assessment of surface modifications, toxicity, and biocompatibility (United States)

    Jewett, Scott A.

    III-V semiconductors such as InAs have recently been employed in a variety of applications where the electronic and optical characteristics of traditional, silicon-based materials are inadequate. InAs has a narrow band gap and very high electron mobility in the near-surface region, which makes it very attractive for high performance transistors, optical applications, and chemical sensing. However, InAs forms an unstable surface oxide layer in ambient conditions, which can corrode over time and leach toxic indium and arsenic components. Current research has gone into making InAs more attractive for biological applications through passivation of the surface by adlayer adsorption. In particular, wet-chemical methods are current routes of exploration due to their simplicity, low cost, and flexibility in the type of passivating molecule. This dissertation focuses on surface modifications of InAs using wet-chemical methods in order to further its use in biological applications. First, the adsorption of collagen binding peptides and mixed peptide/thiol adlayers onto InAs was assessed. X-ray photoelectron spectroscopy (XPS) along with atomic force microscopy (AFM) data suggested that the peptides successfully adsorbed onto InAs, but were only able to block oxide regrowth to a relatively low extent. This low passivation ability is due to the lack of covalent bonds of the peptide to InAs, which are necessary to effectively block oxide regrowth. The addition of a thiol, in the form of mixed peptide/thiol adlayers greatly enhanced passivation of InAs while maintaining peptide presence on the surface. Thiols form tight, covalent bonds with InAs, which prevents oxide regrowth. The presence of the collagen-binding peptide on the surface opens the door to subsequent modification with collagen or polyelectrolyte-based adlayers. Next, the stability and toxicity of modified InAs substrates were determined using inductively coupled plasma mass spectrometry (ICP-MS) and zebrafish studies. InAs substrates modified with a poly(ethylene glycol) (PEG) based adlayer showed the highest stability in physiological conditions by leaching the lowest amounts of indium and arsenic. Modified substrates also showed no toxicity to zebrafish after incubation for 120 hours. Overall, these findings suggest that a variety of adlayers can be functionalized onto InAs surfaces and successfully passivate the surface, along with decreasing InAs toxicity. Finally, we demonstrate how surface modifications can be applied to a different III-V semiconductor, GaN, in order to modulate cellular adhesion. Modification of GaN with a laminin-derived peptide increases the adhesion of PC12 neuronal cells and alters the physical morphology of the adhered cells. Additionally, no toxicity to cells is observed, further demonstrating the potential for employing III-V semiconductors in biological applications.

  17. Surface preparation for ALD of High-k dielectrics on indium gallium arsenide (United States)

    Melitz, Wilhelm

    The key for a successful gate-first process is when subsequent processing steps cannot degrade the semiconductor, the dielectric, or the oxide-semiconductor interfaces. For silicon, the only commercial ALD high-k fabrication process, which avoids processing induced damage, is a replacement gate process (a type of gate-last process). While preparing silicon for gate-last processing is straightforward, the key to a gate-last process for III-V semiconductors is the order and cleanliness of the III-V channel prior to dielectric deposition. Aggressive oxide thickness reduction (equivalent oxide thickness, or EOT, scaling) is needed to fabricate small gate length devices with small subthreshold swings. Furthermore, aggressive EOT scaling requires a very high uniform ALD nucleation density, with no pinholes due to surface contaminants. The key barrier to solving a very practical problem is a surface chemistry challenge: develop a chemical process which removes nearly all air induced defects and contaminants and leaves the III-V surface flat and electrically active for high nucleation density ALD gate oxide deposition, which unpins the Fermi level. The following study uses scanning tunneling microscopy (STM) and scanning tunneling spectroscopy (STS) to observe the removal of the oxide layer and restoration of the clean InGaAs surface reconstruction with atomic hydrogen cleaning, allowing for a gate-last or replacement-gate process. Along with surface cleaning STM and STS was used to characterize the initial passivation of InGaAs surfaces via ALD of trimethyl aluminum (TMA). The substrate temperature and initial surface reconstruction was critical to forming an unpinned passivation layer with a high nucleation density. A method was developed to use Kelvin probe force microscopy (KPFM) as a tool for insightful feedback on the electrostatics of scaled MOSFET devices. KPFM is a unique technique for providing two-dimensional potential profiles inside a working device. A procedure is described to obtain high-resolution KPFM results on ultra-high vacuum (UHV) cleaved III-V MOSCAPs.

  18. Computer modeling characterization, and applications of Gallium Arsenide Gunn diodes in radiation environments

    Energy Technology Data Exchange (ETDEWEB)

    El- Basit, Wafaa Abd; El-Ghanam, Safaa Mohamed; Kamh, Sanaa Abd El-Tawab [Electronics Research Laboratory, Physics Department, Faculty of Women for Arts, Science and Education, Ain-Shams University, Cairo (Egypt); Abdel-Maksood, Ashraf Mosleh; Soliman, Fouad Abd El-Moniem Saad [Nuclear Materials Authority, Cairo (Egypt)


    The present paper reports on a trial to shed further light on the characterization, applications, and operation of radar speed guns or Gunn diodes on different radiation environments of neutron or γ fields. To this end, theoretical and experimental investigations of microwave oscillating system for outer-space applications were carried out. Radiation effects on the transient parameters and electrical properties of the proposed devices have been studied in detail with the application of computer programming. Also, the oscillation parameters, power characteristics, and bias current were plotted under the influence of different γ and neutron irradiation levels. Finally, shelf or oven annealing processes were shown to be satisfactory techniques to recover the initial characteristics of the irradiated devices.

  19. Epitaxial growth of dilute nitride-arsenide compound semiconductors by molecular beam epitaxy (United States)

    Adamcyk, Martin

    InyGa1-yAs 1-xNx containing a small amount of nitrogen (x narrow bandgap semiconductor alloy that has advantageous properties for the fabrication of optoelectronic devices. In this thesis, we seek to improve the material quality of InGaAsN and GaAsN by studying how the epitaxial growth conditions affect both the structural and electronic properties of the alloy. We describe a novel RF plasma source based on a helical resonator design that was developed for the incorporation of nitrogen into GaAsN and InGaAsN thin films grown by molecular beam epitaxy. The plasma source is equipped with a baffle apparatus that decreases the ion content of the flux. We show how the structural and electronic properties of InGaAsN epilayers depend on the growth conditions. In situ light scattering measurements and atomic force microscopy show that a faceted surface morphology occurs when growth conditions increase adatom surface diffusion: slow growth rate, high substrate temperature and high V/III ratio. Large nitrogen concentrations also favour the faceted growth mode. The residual strain in relaxed InGaAsN films is found to be higher than in InGaAs epilayers having the same lattice mismatch. In situ substrate curvature measurements were used to monitor the strain state of the sample in real time during the growth. Ex situ transmission electron microscopy and x-ray diffraction measurements agree with the residual strain determined with the in situ monitor. These characterization results also indicate that threading dislocation glide is slower in InGaAsN than in InGaAs. Finally, we find that the electronic properties of InGaAsN are generally degraded with increasing nitrogen content. However, by choosing appropriate growth conditions, we demonstrate InGaAsN quantum wells with room temperature photoluminescence efficiencies that are comparable to InGaAs structures. These photoluminescence results may be related to the faceting transition that was observed during GaAsN growth. In contrast with the findings of other groups, rapid thermal anneals only moderately improve the photoluminescence intensity and line shape of InGaAsN single quantum wells. We observe peak intensity gains on the order of 2 after one minute anneals at 785°C. Hall measurements indicate that the electron mobility of Si-doped GaAsN is inversely proportional to the nitrogen content. We conclude that nitrogen-related neutral impurity scattering is the limiting factor in the electron mobility of GaAsN. The use of Bi as a surfactant during growth is shown to improve the surface morphology of GaAsN epilayers and the photoluminescence properties of InGaAsN single quantum wells. This work provides insight into some of the key issues that must be taken into account in the growth of dilute nitrides.

  20. Formation of defects at high temperature plastic deformation of gallium arsenide

    Energy Technology Data Exchange (ETDEWEB)

    Mikhnovich, V.V.


    The purpose of the present thesis consists in acquiring more concrete information concerning the mechanism of the movement of dislocations and types of defects that appear during the process of dislocation motion on the basis of systematic experimental studies of the GaAs deformation. Experimental studies concerning the dependence of the stress of the samples from their deformation at different values of the deformation parameters (like temperature and deformation speed) were conducted in this paper. To determine the concentration of defects introduced in samples during the deformation process the positron annihilation spectroscopy (PAS) method was used. The second chapter of this paper deals with models of movement of dislocations and origination of defects during deformation of the samples. In the third chapter channels and models of positron annihilation in the GaAs samples are investigated. In the forth chapter the used experimental methods, preparation procedure of test samples and technical data of conducted experiments are described. The fifth chapter shows the results of deformation experiments. The sixth chapter shows the results of positron lifetime measurements by the PAS method. In the seventh chapter one can find analyses of the values of defects concentration that were introduced in samples during deformation. (orig.)

  1. Two-valley Hydrodynamical Models for Electron Transport in Gallium Arsenide: Simulation of Gunn Oscillations

    Directory of Open Access Journals (Sweden)

    A. Marcello Anile


    Full Text Available To accurately describe non-stationary carrier transport in GaAs devices, it is necessary to use Monte Carlo methods or hydrodynamical (or energy transport models which incorporate population transfer between valleys.We present here simulations of Gunn oscillations in a GaAs diode based on two-valley hydrodynamical models: the classic Bløtekjær model and two recently developed moment expansion models. Scattering parameters within the models are obtained from homogeneous Monte Carlo simulations, and these are compared against expressions in the literature. Comparisons are made between our hydrodynamical results, existing work, and direct Monte Carlo simulations of the oscillator device.

  2. Gallium Arsenide detectors for X-ray and electron (beta particle) spectroscopy (United States)

    Lioliou, G.; Barnett, A. M.


    Results characterizing GaAs p+-i-n+ mesa photodiodes with a 10 μm i layer for their spectral response under illumination of X-rays and beta particles are presented. A total of 22 devices, having diameters of 200 μm and 400 μm, were electrically characterized at room temperature. All devices showed comparable characteristics with a measured leakage current ranging from 4 nA/cm2 to 67 nA/cm2 at an internal electric field of 50 kV/cm. Their unintentionally doped i layers were found to be almost fully depleted at 0 V due to their low doping density. 55Fe X-ray spectra were obtained using one 200 μm diameter device and one 400 μm diameter device. The best energy resolution (FWHM at 5.9 keV) achieved was 625 eV using the 200 μm and 740 eV using the 400 μm diameter device, respectively. Noise analysis showed that the limiting factor for the energy resolution of the system was the dielectric noise; if this noise was eliminated by better design of the front end of the readout electronics, the achievable resolution would be 250 eV. 63Ni beta particle spectra obtained using the 200 μm diameter device showed the potential utility of these detectors for electron and beta particle detection. The development of semiconductor electron spectrometers is important particularly for space plasma physics; such devices may find use in future space missions to study the plasma environment of Jupiter and Europa and the predicted electron impact excitation of water vapor plumes from Europa hypothesized as a result of recent Hubble Space Telescope (HST) UV observations.

  3. Peculiarities of defect and impurity behaviour in gallium arsenide during surface gettering

    CERN Document Server

    Gorelenok, A T; Kamanin, A V; Kokhanovskii, S I; Mezdrogina, M M; Shmidt, N M; Vasilev, V I


    Spatial redistribution of anti-site defects after surface gettering of GaAs wafers coated by an yttrium film has been found. It has been established that both one- and two-side coating of the GaAs wafer with an yttrium film followed by a heat treatment allows a high-resistivity (n = 10 sup 1 sup 2 cm sup - sup 3) material to be obtained with uniform distributions of both electrons and the effective hole lifetime in a depth of 1.6 mm. The material obtained is suitable for creating Schottky barriers and structures for use in both high-power devices and x-ray detectors.

  4. Molecular beam epitaxial growth of tungsten layers embedded in single crystal gallium arsenide

    Energy Technology Data Exchange (ETDEWEB)

    Harbison, J.P.; Hwang, D.M.; Levkoff, J.; Derkits G.E. Jr.


    We have been able to fabricate structures which consist of a thin (approx.10 nm) polycrystalline W film embedded in surrounding single crystalline GaAs by molecular beam epitaxy (MBE) using an electron beam evaporation source to deposit W metal in an ultrahigh vacuum MBE growth chamber. The entire deposition sequence can take place at elevated temperature (625--700 /sup 0/C) due to the nonreactive nature of W with respect to GaAs. Reflective high-energy diffraction and transmission electron microscopy indicate that the single crystal GaAs overgrowth proceeds by seeding from the GaAs layer beneath the W through spontaneously occurring perforations in the W layer.

  5. The scaling of the effective band gaps in indium-arsenide quantum dots and wires. (United States)

    Wang, Fudong; Yu, Heng; Jeong, Sohee; Pietryga, Jeffrey M; Hollingsworth, Jennifer A; Gibbons, Patrick C; Buhro, William E


    Colloidal InAs quantum wires having diameters in the range of 5-57 nm and narrow diameter distributions are grown from Bi nanoparticles by the solution-liquid-solid (SLS) mechanism. The diameter dependence of the effective band gaps (DeltaE(g)s) in the wires is determined from photoluminescence spectra and compared to the experimental results for InAs quantum dots and rods and to the predictions of various theoretical models. The DeltaE(g) values for InAs quantum dots and wires are found to scale linearly with inverse diameter (d(-1)), whereas the simplest confinement models predict that DeltaE(g) should scale with inverse-square diameter (d(-2)). The difference in the observed and predicted scaling dimension is attributed to conduction-band nonparabolicity induced by strong valence-band-conduction-band coupling in the narrow-gap InAs semiconductor.

  6. Physico-Chemical Modeling of the Sulfo-Arsenide System of Gold Bearing Ore Deposits

    Directory of Open Access Journals (Sweden)

    N. V. VILOR


    Full Text Available The existence of gold-arsenic mineralization, the presence of enhanced concentrations of gold in arsenopyrite, especially in its fine grain varieties showing positive gold-arsenic ratios in gold-quartz and gold-pyritic ores indicate the important role of As in hydrothermal gold transport. The most accessible approach to the investigation of these complicated systems is provided by physico-chemical modeling. In the present work the isobaric isothermal potentials (DG°f 298 of thioarsenides, the most important group of arsenic compounds in the solution, have been determined and refined on the basis of the creation of physico-chemical models using the data on the As sulfide solubility in the As – S – O – H system. The data obtained were reconciled with the thermodynamic data available by solving the reverse thermodynamic problem. Numerical physico-chemical modeling has been carried out for a series of tests in both pure water and hydrogen sulfide solutions (0.0032 - 0.011m with the initial pH values from 1.14 to 8.4 in the 25-250°C temperature range under saturated water steam pressure. The computer-calculated constants are included in the modeling of tests on orpiment dissolution in sulfide-sodium solutions. The As2S3ryst solubility in the 25-250°C temperature range has first been obtained. A specific feature of the process is a sharp increase in dissolved arsenic total concentration as the pH value of the hydrothermal phase rises from 4 to 6-7. Concentration increases and gradient decreases with temperature rise. The predominant forms are represented by thioarsenites. Just as in acidic, so in weakly and moderately alkaline solutions the orpiment solubility is caused by the concentration combination of thioarsenous acid H3AsS3 and its oligomers H4As2S50 and H2As2S40. At a temperature of over 200-250°C these concentrations can be compared only with that of the AsOH (HS2o complex of mixed composition.

  7. A customizable commercial miniaturized 320×256 indium gallium arsenide shortwave infrared camera (United States)

    Huang, Shih-Che; O'Grady, Matthew; Groppe, Joseph V.; Ettenberg, Martin H.; Brubaker, Robert M.


    The design and performance of a commercial short-wave-infrared (SWIR) InGaAs microcamera engine is presented. The 0.9-to-1.7 micron SWIR imaging system consists of a room-temperature-TEC-stabilized, 320x256 (25 μm pitch) InGaAs focal plane array (FPA) and a high-performance, highly customizable image-processing set of electronics. The detectivity, D*, of the system is greater than 1013 cm-√Hz/W at 1.55 μm, and this sensitivity may be adjusted in real-time over 100 dB. It features snapshot-mode integration with a minimum exposure time of 130 μs. The digital video processor provides real time pixel-to-pixel, 2-point dark-current subtraction and non-uniformity compensation along with defective-pixel substitution. Other features include automatic gain control (AGC), gamma correction, 7 preset configurations, adjustable exposure time, external triggering, and windowing. The windowing feature is highly flexible; the region of interest (ROI) may be placed anywhere on the imager and can be varied at will. Windowing allows for high-speed readout enabling such applications as target acquisition and tracking; for example, a 32x32 ROI window may be read out at over 3500 frames per second (fps). Output video is provided as EIA170-compatible analog, or as 12-bit CameraLink-compatible digital. All the above features are accomplished in a small volume < 28 cm3, weight < 70 g, and with low power consumption < 1.3 W at room temperature using this new microcamera engine. Video processing is based on a field-programmable gate array (FPGA) platform with a soft-embedded processor that allows for ease of integration/addition of customer-specific algorithms, processes, or design requirements. The camera was developed with the high-performance, space-restricted, power-conscious application in mind, such as robotic or UAV deployment.

  8. Nuclear magnetization in gallium arsenide quantum dots at zero magnetic field. (United States)

    Sallen, G; Kunz, S; Amand, T; Bouet, L; Kuroda, T; Mano, T; Paget, D; Krebs, O; Marie, X; Sakoda, K; Urbaszek, B


    Optical and electrical control of the nuclear spin system allows enhancing the sensitivity of NMR applications and spin-based information storage and processing. Dynamic nuclear polarization in semiconductors is commonly achieved in the presence of a stabilizing external magnetic field. Here we report efficient optical pumping of nuclear spins at zero magnetic field in strain-free GaAs quantum dots. The strong interaction of a single, optically injected electron spin with the nuclear spins acts as a stabilizing, effective magnetic field (Knight field) on the nuclei. We optically tune the Knight field amplitude and direction. In combination with a small transverse magnetic field, we are able to control the longitudinal and transverse components of the nuclear spin polarization in the absence of lattice strain--that is, in dots with strongly reduced static nuclear quadrupole effects, as reproduced by our model calculations.

  9. Nuclear magnetization in gallium arsenide quantum dots at zero magnetic field (United States)

    Sallen, G.; Kunz, S.; Amand, T.; Bouet, L.; Kuroda, T.; Mano, T.; Paget, D.; Krebs, O.; Marie, X.; Sakoda, K.; Urbaszek, B.


    Optical and electrical control of the nuclear spin system allows enhancing the sensitivity of NMR applications and spin-based information storage and processing. Dynamic nuclear polarization in semiconductors is commonly achieved in the presence of a stabilizing external magnetic field. Here we report efficient optical pumping of nuclear spins at zero magnetic field in strain-free GaAs quantum dots. The strong interaction of a single, optically injected electron spin with the nuclear spins acts as a stabilizing, effective magnetic field (Knight field) on the nuclei. We optically tune the Knight field amplitude and direction. In combination with a small transverse magnetic field, we are able to control the longitudinal and transverse components of the nuclear spin polarization in the absence of lattice strain—that is, in dots with strongly reduced static nuclear quadrupole effects, as reproduced by our model calculations.

  10. Gallium arsenide p+–n–p+-structures with impoverished base area

    Directory of Open Access Journals (Sweden)

    Karimov A. V.


    Full Text Available It is displayed experimentally, that the current transport’s mechanism through p+GaAs–nGaAs–p+GaAs-structure is formed by injection-tunnel and generation-recombination mechanisms. Injection-tunnel current prevails at modulation of base’s part which contains defects, and generation-recombination currents are determinative at modulation of base’s part with lesser defectiveness. p+GaAs–nGaAs–p+GaAs-structures are of interest for creating voltage suppressors and electronic switches on their base.

  11. Microwave Semiconductor Research - Materials, Devices and Circuits and Gallium Arsenide Ballistic Electron Transistors. (United States)


    Eastman, D.W. Woodard, C.E.C. Wood and T.R. AuCoin, DRC , Santa Barbara, CA (June 22-24, 1981). 1. "Experimental Studies of Ballistic Transport in...prepared for publication. These results are fundamental in character and have been published in " highly regarded, refereed technical journals. The...High-Speed Logic", R.A. Sadler and L.F. Eastman, DRC , University of Vermont, Burlington, VT (June 20-22, 1983). 30. "High-Speed Logic at 300 K with Self

  12. Ballistic magnetotransport and spin-orbit interaction in indium antimonide and indium arsenide quantum wells (United States)

    Peters, John Archibald

    While charge transport in a two-dimensional electron system (2DES) is fairly well understood, many open experimental and theoretical questions related to the spin of electrons remain. The standard 2DES embedded in Alx Ga1-xAs/GaAs heterostructures is most likely not the optimal candidate for such investigations, since spin effects as well as spin-orbit interactions are small perturbations compared to other effects. This has brought InSb- and InAs-based material systems into focus due to the possibility of large spin-orbit interactions. By utilizing elastic scattering off a lithographic barrier, we investigate the consequence of spin on different electron trajectories observed in InSb and InAs quantum wells. We focus on the physical properties of spin-dependent reflection in a 2DES and we present experimental results demonstrating a method to create spin-polarized beams of ballistic electrons in the presence of a lateral potential barrier. Spatial separation of electron spins using cyclotron motion in a weak magnetic is also achieved via transverse magnetic focusing. We also explore electrostatic gating effects in InSb/InAlSb heterostructures and demonstrate the effective use of polymethylglutarimide (PMGI) as a gate dielectric for InSb. The dependence on temperature and on front gate voltage of mobility and density are also examined, revealing a strong dependence of mobility on density. As regards front gate action, there is saturation in the density once it reaches a limiting value. Further, we investigate antidot lattices patterned on InSb/InAlSb and InAs/AlGaSb heterostructures. At higher magnetic fields, ballistic commensurability features are displayed while at smaller magnetic fields localization and quantized oscillatory phenomena appear, with marked differences between InSb and InAs. Interesting localization behavior is exhibited in InSb, with the strength of the localization peak decreasing exponentially with temperature between 0.4 K and 50 K. InAs on the other hand show a strikingly modified antilocalization behavior, with small-period oscillations in magnetic field superposed. We also observe Altshuler-Aronov-Spivak oscillations in InSb and InAs antidot lattices and extract the phase and spin coherence lengths in InAs. Our experimental results are discussed in the light of localization and anti localization as probes of disorder and of spin dephasing mechanisms, modified by the artificial potential of the antidot lattice.

  13. Superconducting properties of “111” type LiFeAs iron arsenide single crystals

    Institute of Scientific and Technical Information of China (English)


    LiFeAs single crystal has been grown with superconducting transition temperature Tc comparable to that of polycrystals.A magnetic transition is found at about 160 K,which suggests the correlation of superconductivity with spin wave density.

  14. Superconductor-semiconductor-superconductor planar junctions of aluminium on DELTA-doped gallium arsenide

    DEFF Research Database (Denmark)

    Taboryski, Rafael Jozef; Clausen, Thomas; Kutchinsky, jonatan


    We have fabricated and characterized planar superconductor-semiconductor-superconductor (S-Sm-S) junctions with a high quality (i.e. low barrier) interface between an n++ modulation doped conduction layer in MBE grown GaAs and in situ deposited Al electrodes. The Schottky barrier at the S...

  15. A simple soft lithographic nanopatterning of gold on gallium arsenide via galvanic displacement. (United States)

    Lim, Hyuneui; Noh, Jung-Hyun; Choi, Dae-Geun; Kim, Wan-Doo; Maboudian, Roya


    Nanoscale patterning of gold layers on GaAs substrate is demonstrated using a combination of soft lithographic molding and galvanic displacement deposition. First, an electroless deposition method has been developed to plate gold on GaAs with ease and cost-effectiveness. The electroless metallization process is performed by dipping the GaAs substrates into a gold salt solution without any reducing agents or additives. The deposition proceeds via galvanic displacement in which gold ions in the aqueous solution are reduced by electrons arising from the GaAs substrate itself. The deposition rate, surface morphology and adhesion property can be modulated by the plating parameters such as the choice of acids and the immersion time. Second, soft lithographic patterning of nanodots, nanorings, and nanolines are demonstrated on GaAs substrates with hard-polydimethylsiloxane (h-PDMS) mold and plasma etching. This method can be easily applied to the metallization and nanopatterning of gold on GaAs surfaces.

  16. Growth and characterization of epitaxial aluminum layers on gallium-arsenide substrates for superconducting quantum bits (United States)

    Tournet, J.; Gosselink, D.; Miao, G.-X.; Jaikissoon, M.; Langenberg, D.; McConkey, T. G.; Mariantoni, M.; Wasilewski, Z. R.


    The quest for a universal quantum computer has renewed interest in the growth of superconducting materials on semiconductor substrates. High-quality superconducting thin films will make it possible to improve the coherence time of superconducting quantum bits (qubits), i.e., to extend the time a qubit can store the amplitude and phase of a quantum state. The electrical losses in superconducting qubits highly depend on the quality of the metal layers the qubits are made from. Here, we report on the epitaxy of single-crystal Al (011) layers on GaAs (001) substrates. Layers with 110 nm thickness were deposited by means of molecular beam epitaxy at low temperature and monitored by in situ reflection high-energy electron diffraction performed simultaneously at four azimuths. The single-crystal nature of the layers was confirmed by ex situ high-resolution x-ray diffraction. Differential interference contrast and atomic force microscopy analysis of the sample’s surface revealed a featureless surface with root mean square roughness of 0.55 nm. A detailed in situ study allowed us to gain insight into the nucleation mechanisms of Al layers on GaAs, highlighting the importance of GaAs surface reconstruction in determining the final Al layer crystallographic orientation and quality. A highly uniform and stable GaAs (001)-(2× 4) reconstruction reproducibly led to a pure Al (011) phase, while an arsenic-rich GaAs (001)-(4× 4) reconstruction yielded polycrystalline films with an Al (111) dominant orientation. The near-atomic smoothness and single-crystal character of Al films on GaAs, in combination with the ability to trench GaAs substrates, could set a new standard for the fabrication of superconducting qubits.

  17. Energy Levels and Predicted Absorption Spectra of Rare-Earth Ions in Rare-Earth Arsenides (United States)


    2 copies) Departmento de Fisica Ames, IA 50011 Attn: A. da Gama Attn: G. F. de SA Argonne National Laboratory Attn: 0. L. Malta Attn: W. T. Carnall...da UFPE, Cidade Universitaria 9700 South Ca.s Avenue 50,000, Recife, Pe, Brasil Argonne, IL 60439 26 Distribution (cont’d) Howard University

  18. Ultra-Low Power Fiber-Coupled Gallium Arsenide Photonic Crystal Cavity Electro-Optical Modulator (United States)


    200 nA corresponding to voltages of 0, 0.67, and 1 V (inset of Fig. 2(b)). As can be seen, the cavity resonance blueshifts monotonically even for...these ultra- low injection levels. In fact, 50% of the blueshift occurs in the first 20 nA of injection before saturating at approximately 200 nA (Fig...with a better MBE growth method as minimal leakage current was observed for similar devices in [13]. Nonetheless, the total blueshift of 110 pm is

  19. Type-II indium arsenide/gallium antimonide superlattices for infrared detectors (United States)

    Mohseni, Hooman

    In this work, the unique properties of type-II InAs/GaSb heterojunctions were utilized for the realization of novel infrared photodetectors with higher operating temperature, detectivity and uniformity than the commonly available infrared detectors. This effort was concentrated on two major devices: uncooled infrared detectors in the long wavelength infrared (LWIR) range, and cooled devices in the very long wavelength infrared (VLWIR) range. Uncooled infrared (IR) detectors are required for low-cost, lightweight sensor systems that have many industrial and medical applications. Commercially available uncooled IR sensors use ferroelectric or microbolometer detectors. These sensors are inherently slow and cannot detect rapid signal changes needed for high-speed infrared systems. Some of the applications which require a fast detector (tau LIDARs. Although photon detectors have frequency responses in the megahertz range, their high temperature detectivity is severely degraded due to high Auger recombination rates. Bandgap engineering was used in order to suppress Auger recombination at room temperature in type-II superlattices. Our experimental results demonstrated nearly one order of magnitude lower Auger recombination rate at room temperature in these type-II superlattices compared to typical intrinsic detectors, such as HgCdTe, with similar bandgap. Uncooled detectors based on the engineered superlattices showed a detectivity of 1.3 x 108g cmHz 1/2/W at 11 Et m, which is comparable to microbolometers. However, the measured response time of the detectors was more than five orders of magnitude faster than microbolometers. In parallel, devices for operation in the VLWIR were developed. High-performance infrared detectors with cutoff wavelength above 14 mum are highly needed for many space-based applications. Commonly used detectors are extrinsic silicon and HgCdTe. However, the former has to be cooled below 10K, and the latter do not have good uniformity in the VLWIR range. We demonstrated high-performance type-II superlattice photodiodes with cutoff wavelength up to 25 mum and excellent bandgap uniformity over a three-inch wafer area. Devices with a 50% cutoff wavelength of 16 mum showed a nearly 50% internal quantum efficiency and background limited infrared photodetector (BLIP) performance at T = 60 K for the first time.

  20. Pseudogap from preformed Cooper pairs in a platinum-iron-arsenide superconductor

    Energy Technology Data Exchange (ETDEWEB)

    Surmach, M.A.; Brueckner, F.; Kamusella, S.; Sarkar, R.; Portnichenko, P.Y.; Klauss, H.H.; Inosov, D.S. [TU Dresden (Germany); Park, J.T. [MLZ, Garching (Germany); Luetkens, H.; Biswas, P. [PSI, Villigen (Switzerland); Choi, W.J.; Seo, Y.I.; Kwon, Y.S. [DGIST, Daegu (Korea, Republic of)


    Using a combination of μSR, INS and NMR, we investigated the novel iron-based superconductor with a triclinic crystal structure (CaFe{sub 1-x}Pt{sub x}As){sub 10}Pt{sub 3}As{sub 8} (T{sub c}=13 K). The T-dependence of the superfluid density from our μSR relaxation-rate measurements indicates the presence of two superconducting gaps. According to our INS measurements, commensurate spin fluctuations are centered at the (π, 0) wave vector. Their intensity is unchanged across T{sub c}, indicating the absence of a spin resonance typical for many Fe-based superconductors. Instead, we observed a peak in the spin-excitation spectrum around ℎω{sub 0}=7 meV at the same wave vector, which persists above T{sub c}. The temperature dependence of magnetic intensity at 7 meV revealed an anomaly around T*=45 K related to the disappearance of this new mode. A suppression of the spin-lattice relaxation rate, 1/T{sub 1}T, observed by NMR immediately below T* without any notable subsequent anomaly at T{sub c}, indicates that T* could mark the onset of a pseudogap in (CaFe{sub 1-x}Pt{sub x}As){sub 10}Pt{sub 3}As{sub 8}, which is likely associated with the emergence of preformed Cooper pairs.

  1. Hot-Electron Degradation of Gallium Arsenide Metal-Semiconductor Field-Effect Transistors. (United States)

    Tkachenko, Yevgeniy A.


    The physical mechanism of gradual degradation of GaAs MESFETs during RF overdrive is investigated in detail. A hot-electron effect was found responsible for this so-called "power slump" problem. Hot electrons produced by a large drain-gate voltage swing, tunnel from the MESFET channel and get trapped in SiN. These trapped electrons (i) increase surface depletion, hence reduce maximum channel current, transconductance and transistor gain, (ii) increase knee voltage through an increase in series channel resistance, (iii) relax gate-drain field distribution, thereby suppressing avalanche breakdown, (iv) decrease gate-drain capacitance, hence rm S_{22} under open-channel condition, and (v) increase surface leakage through trap hopping in SiN. The damage to SiN can only be partially recovered by deep UV illumination or 200^circrm C anneal. The evidence supports that trapping occurs in the bulk SiN, instead of at the GaAs/SiN interface. The possible chemical reaction responsible for this trap formation is breaking of the Si-H bond in SiN. An analytical theory of hot-electron effects, which combines hot-electron trapping with gate-drain breakdown and pinched-channel electro-luminescence, was developed and verified using experimental data and numerical simulations. Based on this theory, the rate of hot electron trapping was obtained and the threshold energy for trap formation was determined. The square-root time dependence given by the theory and the threshold energy of 1.9 eV were found consistent with gate current and electro-luminescence measurements. Numerical analysis was consistent with a trap density of the order of 5times10^{12}/rm cm^2 over a distance of approximately 0.1 murm m from the gate toward the drain, and it predicted the experimentally observed open-channel current reduction and gate-drain field relaxation. The spatial distribution of trapped electrons was directly observed by a novel high-voltage electron-beam-induced -current imaging technique. It confirmed the model's prediction. These results can be incorporated into large-signal transistor models for computer-aided circuit design. Such models would quantify trade-off between performance and reliability. An accelerated qualification procedure for the hot-electron-induced degradation trend is devised. This is based on the high-frequency waveform probing and high -sensitivity electro-luminescence measurements. Hot-electron-induced degradation was also found to take place in pseudomorphic high-electron-mobility transistors (PHEMT). The basic signatures of PHEMT degradation are similar to those of MESFETs, however some differences exist due to the structural differences between them. For PHEMT, in addition to SiN surface passivation, hot-electron traps may be formed in the AlGaAs layer under the gate. In addition, various temperature-activated degradation modes are more strongly coupled in the case of PHEMT, which requires analyzing them separately from the field-activated mode.

  2. Optical Bistable Arrays: Prospects for Ultimate Performances, (United States)


  3. Formation of indium arsenide atomic wires on the In/Si(111)-4 × 1 surface (United States)

    Guerrero-Sánchez, J.


    Density functional theory calculations have been applied to describe the formation of InAs atomic-size wires on the In/Si(111)-4 × 1 surface. Two different coverages, ¼ ML and ½ ML, were considered. We have taken in to consideration different high symmetry sites for As adsorption. At ¼ ML coverage, in the energetically stable configuration, As and In atoms form atomic wires. Upon increasing the coverage up to ½ ML of As, a pair of InAs atomic wires are formed. Surface formation energy calculations help to clarify the stability ranges of these structures: for arsenic poor conditions the stable configuration corresponds to the In/Si(111)-4 × 1 surface (with no As atoms). Increasing the arsenic content, for intermediate to rich As conditions, results in the formation of an InAs wire. At the arsenic rich limit, the formation of two InAs wires is favorable. The InAs wires are highly symmetric, and charge density distributions and projected density of states show the covalent character of the Insbnd As bonds of the wire. These results demonstrate that the In/Si(111)-4 × 1 surface may be used as a substrate to growth quasi-unidimensional InAs wires.

  4. Transient Velocity Assessment in Gallium Arsenide, and of Other GaAs Characteristics Related to Device Functions (United States)


    RW-809 ^ C^> Scientific Program Officer: Mr . Sven A. Roosild, DARPA/DSO 1400 Wilson Blvd. Arlington, VA 22209 Contractor: Oregon Graduate...of acoustic phonons, non-parabolicity of the conduction band minimum and intervaliey scattering through the admixture of p-type states. He concluded...llarrlta 1985 LEC (HP) 50 5 Goutereaux et_ al. lUrrltt 1985 LEC (HP) 50 5 Ilakemore et_ al. MOCSEMHAD 1985 IXC (HP) 50 0.5 Dobrllla et al. MRS /5F0 1985

  5. Boron, bismuth co-doping of gallium arsenide and other compounds for photonic and heterojunction bipolar transistor devices (United States)

    Mascarenhas, Angelo


    Isoelectronic co-doping of semiconductor compounds and alloys with acceptors and deep donors is sued to decrease bandgap, to increase concentration of the dopant constituents in the resulting alloys, and to increase carrier mobilities lifetimes. For example, Group III-V compounds and alloys, such as GaAs and GaP, are isoelectronically co-doped with, for example, B and Bi, to customize solar cells, and other semiconductor devices. Isoelectronically co-doped Group II-VI compounds and alloys are also included.

  6. Gallium arsenide (GaAs) (001) after sublimation of arsenic (As) thin-film cap, by XPS

    Energy Technology Data Exchange (ETDEWEB)

    Engelhard, Mark H.; Lyubinetsky, Andre; Baer, Don R.


    Survey and high energy resolution spectra are reported for MBE grown GaAs (001) that had been capped with As. The As cap was removed by heating in situ prior to analysis. The current data expands upon the spectral regions previously reported in Surface Science Spectra. High energy resolution spectral features reported include: 2p, 3s, 3p, 3d, and L3M45M45 peaks for As; 2p, 3s, 3p, 3d, and L3M45M45 peaks for Ga; and the valance band region.

  7. Technology characteristics and concerns arising in the design and fabrication of an entire signal processor using gallium arsenide integrated circuits (United States)

    Naused, Barbara A.; Samson, Mark L.; Schwab, Daniel J.; Gilbert, Barry K.

    Various GaAs transistor and gate technologies that have been developed since 1980 are analyzed. The characteristics of GaAs logic gates and ICs and the buffered FET logic, Shottky diode FET logic, direct coupled FET logic, and heterojunction integrated injection logic used to implement GaAs gate arrays of LSI complexity are described. The use of digital GaAs in a complex target signal processor, the Advanced Onboard Signal Processor (AOSP), is studied. Data from the testing of GaAs components for the AOSP at the wafer probe, package, and assembled circuit board levels are examined.

  8. Optical and Electrical Characterization of Melt-Grown Bulk Indium Gallium Arsenide and Indium Arsenic Phosphide Alloys (United States)


    calculated using following relations: H H s qR r N and s H H R . (3.8) Temperature-dependent Hall ( TDH ...freeze, leaving the material highly resistive. If the material is highly degenerate, TDH measurements will reveal the degenerate layer at low

  9. Electrical detection of the biological interaction of a charged peptide via gallium arsenide junction-field-effect transistors (United States)

    Lee, Kangho; Nair, Pradeep R.; Alam, Muhammad A.; Janes, David B.; Wampler, Heeyeon P.; Zemlyanov, Dmitry Y.; Ivanisevic, Albena


    GaAs junction-field-effect transistors (JFETs) are utilized to achieve label-free detection of biological interaction between a probe transactivating transcriptional activator (TAT) peptide and the target trans-activation-responsive (TAR) RNA. The TAT peptide is a short sequence derived from the human immunodeficiency virus-type 1 TAT protein. The GaAs JFETs are modified with a mixed adlayer of 1-octadecanethiol (ODT) and TAT peptide, with the ODT passivating the GaAs surface from polar ions in physiological solutions and the TAT peptide providing selective binding sites for TAR RNA. The devices modified with the mixed adlayer exhibit a negative pinch-off voltage (VP) shift, which is attributed to the fixed positive charges from the arginine-rich regions in the TAT peptide. Immersing the modified devices into a TAR RNA solution results in a large positive VP shift (>1 V) and a steeper subthreshold slope (˜80 mV/decade), whereas "dummy" RNA induced a small positive VP shift (˜0.3 V) without a significant change in subthreshold slopes (˜330 mV/decade). The observed modulation of device characteristics is analyzed with analytical modeling and two-dimensional numerical device simulations to investigate the electronic interactions between the GaAs JFETs and biological molecules.

  10. Electrical detection of the biological interaction of a charged peptide via gallium arsenide junction-field-effect transistors


    Lee, Kangho; Nair, Pradeep R.; Alam, Muhammad A.; Janes, David B.; Wampler, Heeyeon P; Zemlyanov, Dmitry; Ivanisevic, Albena


    GaAs junction-field-effect transistors (JFETs) are utilized to achieve label-free detection of biological interaction between a probe transactivating transcriptional activator (TAT) peptide and the target trans-activation-responsive (TAR) RNA. The TAT peptide is a short sequence derived from the human immunodeficiency virus-type 1 TAT protein. The GaAs JFETs are modified with a mixed adlayer of 1-octadecanethiol (ODT) and TAT peptide, with the ODT passivating the GaAs surface from polar ions ...

  11. Superconductivity at 43 K in Samarium-arsenide Oxides $SmFeAsO_{1-x}F_x$


    Chen, X. H.; Wu, T; Wu, G.; Liu, R. H.; Chen, H.; Fang, D. F.


    Since the discovery of high-transition temperature ($T_c$) superconductivity in layered copper oxides, extensive efforts have been devoted to explore the higher $T_c$ superconductivity. However, the $T_c$ higher than 40 K can be obtained only in the copper oxide superconductors so far. The highest reported value of $T_c$ for non-copper-oxide bulk superconductivity is 39 K in $MgB_2$.\\cite{jun} The $T_c$ of about 40 K is close to or above the theoretical value predicted from BCS theory.\\cite{m...

  12. Superconductivity at 36 K in gadolinium-arsenide oxides GdO1-xFxFeAs

    Institute of Scientific and Technical Information of China (English)

    CHENG Peng; FANG Lei; YANG Huan; ZHU XiYu; MU Gang; LUO HuiQian; WANG ZhaoSheng; WEN HaiHu


    In this paper we report the fabrication and superconducting properties of GdO1-xFxFeAs.It was found that when x is equal to 0.17,GdO0.83F0.17FeAs is a su-perconductor with the onset transition temperature Tonc≈36.6 K.Resistivity anomaly near 130 K was observed for all samples up to x = 0.17,and such a phenomenon is similar to that of LaO1-xFxFeAs.Hall coefficient indicates that GdO1-xFxFeAs is conducted by electron-like charge carriers.

  13. Superconductivity at 36 K in gadolinium-arsenide oxides GdO1-xFxFeAs

    Institute of Scientific and Technical Information of China (English)


    In this paper we report the fabrication and superconducting properties of GdO1-xFxFeAs. It was found that when x is equal to 0.17, GdO0.83F0.17FeAs is a su-perconductor with the onset transition temperature Tcon ≈ 36.6 K. Resistivity anomaly near 130 K was observed for all samples up to x = 0.17, and such a phenomenon is similar to that of LaO1-xFxFeAs. Hall coefficient indicates that GdO1-xFxFeAs is conducted by electron-like charge carriers.

  14. Thin films of gallium arsenide on low-cost substrates. Final report, July 5, 1976--July 2, 1977

    Energy Technology Data Exchange (ETDEWEB)

    Ruth, R.P.; Dapkus, P.D.; Dupuis, R.D.; Campbell, A.G.; Johnson, R.E.; Manasevit, H.M.; Moudy, L.A.; Yang, J.J.; Yingling, R.D.


    The metalorganic chemical vapor deposition (MO-CVD) technique has been applied to the growth of thin films of GaAs and GaAlAs on inexpensive polycrystalline or amorphous substrate materials (glasses, glass-ceramics, alumina ceramics, and metals) for use in fabrication of large-area low-cost photovoltaic device structures. Trimethylgallium (TMG), arsine (AsH/sub 3/), and trimethylaluminum (TMAl) are mixed in appropriate concentrations at room temperature in the gaseous state and pyrolyzed at the substrate, which is heated in a vertical reactor chamber to temperature in the range 600 to 800/sup 0/C, to produce the desired film composition and properties. Of ten candidate low-cost substrates initially identified for investigation, Corning Code 0317 glass and composites of CVD Ge/glass and sputtered Mo/glass were found to be the most satisfactory, the latter eventually serving as a reference substrate against which to compare the performance of other substrates. Single-crystal window-type solar cells, polycrystalline Schottky-barrier cells, and deposited-junction polycrystalline cells have been grown, fabricated, and characterized. Epitaxial GaAlAs/GaAs p-n junction cells with thin (approx. 500A) Ga/sub 0/ /sub 2/Al/sub 0/ /sub 8/As windows and GaAs:Zn - GaAs:Se junctions were made with AMO efficiencies as high as 12.8 percent with no AR coating. Schottky barrier cells with efficiencies of 2.25 percent AMO (no AR coating) have been made on n/n polycrystalline GaAs structures on Mo/glass composite substrates, with short-circuit current densities up to 12.5 mA/cm/sup 2/. Also, results of analyses of material and processing costs associated with fabrication of thin-film GaAlAs/GaAs solar cells by the MO-CVD process are discussed.

  15. Development of a unique laboratory standard indium gallium arsenide detector for the 500 to 1700 micron spectral region, phase 2 (United States)

    Ban, Vladimir S.; Olsen, Gregory H.


    In the course of this work, 5 mm diameter InGaAs pin detectors were produced which met or exceeded all of the goals of the program. The best results achieved were: shunt resistance of over 300 K ohms; rise time of less than 300 ns; contact resistance of less than 20 ohms; quantum efficiency of over 50 percent in the 0.5 to 1.7 micron range; and devices were maintained and operated at 125 C without deterioration for over 100 hours. In order to achieve the goals of this program, several major technological advances were realized, among them: successful design, construction and operation of a hydride VPE reactor capable of growing epitaxial layers on 2 inch diameter InP substrates with a capacity of over 8 wafers per day; wafer processing was upgraded to handle 2 inch wafers; a double layer Si3N4/SiO2 antireflection coating which enhances response over the 0.5 to 1.7 micron range was developed; a method for anisotropic, precisely controlled CH4/H2 plasma etching for enhancement of response at short wavelengths was developed; and electronic and optical testing methods were developed to allow full characterization of detectors with size and spectral response characteristics. On the basis of the work and results achieved in this program, it is concluded that large size, high shunt resistance, high quantum efficiency InGaAs pin detectors are not only feasible but also manufacturable on industrial scale. This device spans a significant portion of visible and near infrared spectral range and it will allow a single detector to be used for the 0.5 to 1.7 micron spectral region, rather than the presently used silicon (for 0.5 to 1.1 microns) and germanium (0.8 to 1.7 microns).

  16. Anisotropy of iron-platinum-arsenide Ca10(PtnAs8)(Fe2-xPtxAs2)5 single crystals (United States)

    Yuan, F. F.; Sun, Y.; Zhou, W.; Zhou, X.; Ding, Q. P.; Iida, K.; Hühne, R.; Schultz, L.; Tamegai, T.; Shi, Z. X.


    The upper critical field Hc2 anisotropy of Ca10(PtnAs8)(Fe2-xPtxAs2)5 (n = 3, 4) single crystals with long FeAs interlayer distance (d) was studied by angular dependent resistivity measurements. A scaling of the angular dependent resistivity was realized for both single crystals using the anisotropic Ginzburg-Landau (AGL) approach with an appropriate anisotropy parameter γ. The AGL scaling parameter γ increases with decreasing temperature and reaches a value of about 10 at 0.8Tc for both single crystals. These values are much larger than those of other iron-based superconductors (FeSCs). Remarkably, the values of γ2 show an almost linear increase with the FeAs/FeSe interlayer distance d for FeSCs. Compared to cuprates, FeSCs are less anisotropic, indicating that two dimensionality of the superconductivity is intrinsically weak.

  17. Characterization and modeling of the intrinsic properties of 1.5-micrometer gallium indium nitrogen arsenic antimonide/gallium arsenide laser (United States)

    Goddard, Lynford


    Low cost access to optical communication networks is needed to satisfy the rapidly increasing demands of home-based high-speed Internet. Existing light sources in the low-loss 1.2--1.6mum telecommunication wavelength bandwidth are prohibitively expensive for large-scale deployment, e.g. incorporation in individual personal computers. Recently, we have extended the lasing wavelength of room-temperature CW GaInNAs(Sb) lasers grown monolithically on GaAs by MBE up to 1.52mum in an effort to replace the traditional, more expensive, InP-based devices. Besides lower cost wafers, GaInNAs(Sb) opto-electronic devices have fundamental material advantages over InP-based devices: a larger conduction band offset which reduces temperature sensitivity and enhances differential gain, a lattice match to a material with a large refractive index contrast, i.e. AlAs, which decreases the necessary number of mirror pairs in DBRs for VCSELs, and native oxide apertures for current confinement. High performance GaInNAs(Sb) edge-emitting lasers, VCSELs, and DFB lasers have been demonstrated throughout the entire telecommunication band. In this work, we analyze the intrinsic properties of the GaInNAsSb material system, e.g. recombination, gain, band structure and renormalization, and efficiency. Theoretical modeling is performed to calculate a map of the bandgap and effective masses for various material compositions. We also present device performance results, such as: room temperature CW threshold densities below 450A/cm2, quantum efficiencies above 50%, and over 425mW of total power from a SQW laser when mounted epi-up and minimally packaged. These results are generally 2--4x better than previous world records for GaAs based devices at 1.5mum. The high CW power and low threshold exhibited by these SQW lasers near 1.5mum make feasible many novel applications, such as broadband Raman fiber amplifiers and uncooled WDM at the chip scale. Device reliability of almost 500 hours at 200mW CW output power has also been demonstrated. Comparative experiments using innovative characterization techniques, such as: the multiple section absorption/gain method to explore the band structure, as well as the Z-parameter to analyze the dominant recombination processes, have identified the physical mechanisms responsible for improved performance. Also, by measuring the temperature dependence of relevant laser parameters, we have been able to simulate device operation while varying temperature and device geometry.

  18. Measurement and comparison of AC parameters of silicon (BSR and BSFR) and gallium arsenide (GaAs/Ge) solar cells used in space applications

    Energy Technology Data Exchange (ETDEWEB)

    Anil Kumar, R.; Suresh, M.S. [ISRO Satellite Centre, ISRO, Bangalore 560, 017 Kolhapur (India); Nagaraju, J. [Department of Instrumentation, Indian Institute of Science, Bangalore 560, 012 Kolhapur (India)


    The AC parameters of silicon (BSR and BSFR) solar cells and GaAs/Ge solar cell have been measured using impedance spectroscopy. Each cell capacitance, dynamic resistance and series resistance were measured and compared. GaAs/Ge solar cell has shown only the transition capacitance throughout its operating range while silicon (BSR and BSFR) solar cells exhibited both transition and diffusion capacitance. The theoretical and experimental values of dynamic resistance were compared and found in good agreement while the diode factor in silicon solar cells varies from 2 to 1, where as in GaAs/Ge solar cell it varies from 4 to 2 to 1.

  19. Estimation of various scattering parameters and 2-DEG mobilities from electron mobility calculations in the three conduction bands , L and X of gallium arsenide

    Indian Academy of Sciences (India)

    Sonal Singhal; A K Saxena; S Dasgupta


    The electron drift mobility in conduction band of GaAs has been calculated before, but for the first time, we have made attempts to estimate the electron mobilities in higher energy L and X minima. We have also calculated the value of mobility of two-dimensional electron gas needed to predict hetero-structure device characteristics using GaAs. Best scattering parameters have been derived by close comparison between experimental and theoretical mobilities. Room temperature electron mobilities in , L and X valleys are found to be nearly 9094, 945 and 247 cm2 /V-s respectively. For the above valleys, the electron masses, deformation potentials and polar phonon temperatures have been determined to be (0.067, 0.22, 0.39m 0 ), (8.5, 9.5, 6.5 eV), and (416, 382, 542 K) as best values, respectively. The 2-DEG electron mobility in minimum increases to 1.54 × 106 from 1.59 × 105 cm2 /V-s (for impurity concentration of 1014 cm-3) at 10 K. Similarly, the 2-DEG electron mobility values in L and X minima are estimated to be 2.28 × 105 and 1.44 × 105 cm2 /V-s at 10 K, which are about ∼ 4.5 and ∼ 3.9 times higher than normal value with impurity scattering present.

  20. Drug-induced gingival enlargement: biofilm control and surgical therapy with gallium-aluminum-arsenide (GaAlAs) diode laser-A 2-year follow-up. (United States)

    de Oliveira Guaré, Renata; Costa, Soraya Carvalho; Baeder, Fernando; de Souza Merli, Luiz Antonio; Dos Santos, Maria Teresa Botti Rodrigues


    Drug-induced gingival enlargement has been reported in patients treated with various types of anticonvulsant drugs, and is generally associated with the presence of plaque, gingival inflammation, and a genetic predisposition. Effective treatment includes daily oral hygiene and periodic professional prophylaxis. However, in some patients, surgical removal of the gingival tissue overgrowth becomes necessary. The patient in this case report was mentally impaired and had severe drug-induced gingival enlargement. This report describes the initial protocol, the gingivectomy, and a 2-year follow-up. A diode laser was used as an effective and safe method to remove the patient's overgrown gingival tissue.

  1. Synergic phototoxic effect of visible light or Gallium-Arsenide laser in the presence of different photo-sensitizers on Porphyromonas gingivalis and Fusobacterium nucleatum

    Directory of Open Access Journals (Sweden)

    Habibollah Ghanbari


    Conclusion: Within the limitations of this study, the synergic phototoxic effect of visible light in combination with each of the photosensitizers on P. gingivalis and F. nucleatum. However, the synergic phototoxic effect of laser exposure and hydrogen peroxide and curcumin as photosensitizers on F. nucleatum was not shown.

  2. Electronic Properties of III-V Semiconductors under [111] Uniaxial Strain; a Tight-Binding Approach: I. Arsenides and Gallium Phosphide

    Directory of Open Access Journals (Sweden)

    Miguel E. Mora-Ramos


    Full Text Available Empleando un esquema de cálculo tight-binding que usa una base de orbitales sp3s*d5, se estudian propiedades de la estructura electrónica de un grupo de materiales semiconductores IIIV los cuales son de notable interés para la tecnología de dispositivos electrónicos y optoelectrónicos. En específico, se analiza la influencia sobre estas propiedades de una tensión aplicada según la dirección cristalográfica [111], haciendo uso de una formulación basada en la teoría de la elasticidad para establecer las posiciones relativas de los iones vecinos más próximos. Especial atención se presta a la inclusión del efecto de deformación interna de la red cristalina. Para cada material de los estudiados presentamos las dependencias de las brechas energéticas asociadas a los puntos L, X y L de la zona de Brillouin como funciones de la tensión uniaxial en AlAs, GaAs, InAs y GaP. Asimismo, reportamos expresiones de ajuste para los valores de las masas efectivas de conducción en esos cuatro materiales. La comparación de la variación de la brecha de energía en X para el GaP, calculada con nuestro modelo, y recientes resultados experimentales para la transición indirecta entre la banda de huecos pesados y la banda X de conducción arroja una muy buena concordancia.

  3. Effect of Heat Treatment on Electrical Properties and Charge Collection Efficiency of X-Ray Sensors Based on Chrome-Compensated Gallium Arsenide (United States)

    Zarubin, A. N.; Kolesnikova, I. I.; Lozinskaya, A. D.; Novikov, V. A.; Skakunov, M. S.; Tolbanov, O. P.; Tyazhev, A. V.; Shemeryankina, A. V.


    We present the results of experimental studies of the dependences of the specific resistance, charge collection efficiency, product of the mobility on the lifetime (μ×τ)n, and current-voltage characteristics on the heat treatment regimes of X-ray Me-GaAs:Cr-Me-sensors. Experimental samples were the pad-sensors with the area of 0.1-0.25 cm2 and sensitive-layer thickness in the range of 400-500 μm. The values of (μ×τ)n were evaluated by measuring the dependence of the charge collection efficiency on the bias voltage when exposed to gamma rays from the source of 241Am. It is shown that heat treatment in the temperature range 200-500°C does not lead to a significant degradation of properties of Me-GaAs:Cr-Me-sensors and can be used in the manufacturing technology of matrix detectors of ionizing radiation.

  4. Nursing of 37 acute hydrogent arsenide poisoning cases%急性砷化氢中毒的急救与护理37例

    Institute of Scientific and Technical Information of China (English)

    梁晓婷; 吴东


    @@ 砷化氢是毒性极强的有害气体,短期内吸入较高浓度的砷化氢气体可引起急性血管内溶血,严重者可出现急性肾功能衰竭、上消化道出血(UGH)、中毒性脑病、中毒性心肌病等一系列严重的并发症[1].抢救不及时,护理不妥当,死亡率极高.2000年10月~2002年9月,我科救治急性砷化氢中毒患者37例,效果满意,并与41例非中毒病人进行对照,旨在探讨急性砷化氢中毒患者的抢救及护理措施,提高救治水平.现将抢救与护理体会总结如下.

  5. Thin films of gallium arsenide on low-cost substrates. Quarterly technical progress report No. 8 and topical report No. 3, April 2-July 1, 1978

    Energy Technology Data Exchange (ETDEWEB)

    Ruth, R.P.; Dapkus, P.D.; Dupuis, R.D.; Johnson, R.E.; Manasevit, H.M.; Moudy, L.A.; Yang, J.J.; Yingling, R.D.


    The seventh quarter of work on the contract is summarized. The metalorganic chemical vapor deposition (MO-CVD) technique has been applied to the growth of thin films of GaAs and GaAlAs on inexpensive polycrystalline or amorphous substrate materials (primarily glasses and metals) for use in fabrication of large-area low-cost photovoltaic device structures. Trimethylgallium (TMG), arsine (AsH/sub 3/), and trimethylaluminum (TMAl) are mixed in appropriate concentrations at room temperature in the gaseous state and pyrolyzed at the substrate, which is heated in a vertical reactor chamber to temperatures of 725 to 750/sup 0/C, to produce the desired film composition and properties. The technical activities during the quarter were concentrated on (1) a continuing evaluation of various graphite materials as possible substrates for MO-CVD growith of the polycrystalline GaAs solar cells; (2) attempts to improve the quality (especially the grain size) of polycrystalline GaAs films on Mo sheet and Mo/glass substrates by using HCl vapor during the MO-CVD growith process; (3) further studies of the transport properties of polycrystalline GaAs films, wth emphasis on n-type films; (4) continuing investigations of the properties of p-n junctions in polycrystalline GaAs, with emphasis on the formation and properties of p/sup +//n/n/sup +/ deposited structures; and (5) assembling apparatus and establishing a suitable technique for producing TiO/sub 2/ layers for use as AR coatings on GaAs cells. Progress is reported. (WHK)

  6. Nucleation, propagation, electronic levels and elimination of misfit dislocations in III-V semiconductor interfaces. Final report, September 1, 1986--August 31, 1993

    Energy Technology Data Exchange (ETDEWEB)

    Ast, D.G.; Watson, G.P.; Matragrano, M.


    Misfit dislocations in gallium arsenides, indium arsenides, and zinc selenides are discussed. The growth of strained epitaxial layers, isolation and nucleation, thermal stability, and electronic and structural characteristics of misfit dislocations are described.

  7. The crystal structure of synthetic kutinaite, Cu14Ag6As7

    DEFF Research Database (Denmark)

    Karanovic, Ljiljana; Poleti, Dejan; Makovicky, Emil;


    kutinaite, X-ray diffraction, powder method, crystal structure, icosahedral alloy, arsenide, metal clusters......kutinaite, X-ray diffraction, powder method, crystal structure, icosahedral alloy, arsenide, metal clusters...

  8. Analysis and Design of a Gated Envelope Feedback Technique for Automatic Hardware Reconfiguration of RFIC Power Amplifiers, with Full On-Chip Implementation in Gallium Arsenide Heterojunction Bipolar Transistor Technology (United States)

    Constantin, Nicolas Gerard David

    In this doctoral dissertation, the author presents the theoretical foundation, the analysis and design of analog and RF circuits, the chip level implementation, and the experimental validation pertaining to a new radio frequency integrated circuit (RFIC) power amplifier (PA) architecture that is intended for wireless portable transceivers. A method called Gated Envelope Feedback is proposed to allow the automatic hardware reconfiguration of a stand-alone RFIC PA in multiple states for power efficiency improvement purposes. The method uses self-operating and fully integrated circuitry comprising RF power detection, switching and sequential logic, and RF envelope feedback in conjunction with a hardware gating function for triggering and activating current reduction mechanisms as a function of the transmitted RF power level. Because of the critical role that RFIC PA components occupy in modern wireless transceivers, and given the major impact that these components have on the overall RF performances and energy consumption in wireless transceivers, very significant benefits stem from the underlying innovations. The method has been validated through the successful design of a 1.88GHz COMA RFIC PA with automatic hardware reconfiguration capability, using an industry renowned state-of-the-art GaAs HBT semiconductor process developed and owned by Skyworks Solutions, Inc., USA. The circuit techniques that have enabled the successful and full on-chip embodiment of the technique are analyzed in details. The IC implementation is discussed, and experimental results showing significant current reduction upon automatic hardware reconfiguration, gain regulation performances, and compliance with the stringent linearity requirements for COMA transmission demonstrate that the gated envelope feedback method is a viable and promising approach to automatic hardware reconfiguration of RFIC PA's for current reduction purposes. Moreover, in regard to on-chip integration of advanced PA control functions, it is demonstrated that the method is better positioning GaAs HBT technologies, which are known to offer very competitive RF performances but inherently have limited integration capabilities. Finally, an analytical approach for the evaluation of inter-modulation distortion (IMD) in envelope feedback architectures is introduced, and the proposed design equations and methodology for IMD analysis may prove very helpful for theoretical analyses, for simulation tasks, and for experimental work.

  9. Inelastic neutron scattering study of a nonmagnetic collapsed tetragonal phase in nonsuperconducting CaFe2As2: evidence of the impact of spin fluctuations on superconductivity in the iron-arsenide compounds. (United States)

    Soh, J H; Tucker, G S; Pratt, D K; Abernathy, D L; Stone, M B; Ran, S; Bud'ko, S L; Canfield, P C; Kreyssig, A; McQueeney, R J; Goldman, A I


    The relationship between antiferromagnetic spin fluctuations and superconductivity has become a central topic of research in studies of superconductivity in the iron pnictides. We present unambiguous evidence of the absence of magnetic fluctuations in the nonsuperconducting collapsed tetragonal phase of CaFe2As2 via inelastic neutron scattering time-of-flight data, which is consistent with the view that spin fluctuations are a necessary ingredient for unconventional superconductivity in the iron pnictides. We demonstrate that the collapsed tetragonal phase of CaFe2As2 is nonmagnetic, and discuss this result in light of recent reports of high-temperature superconductivity in the collapsed tetragonal phase of closely related compounds.

  10. Investigation of the current break-down phenomena in solar cells

    Energy Technology Data Exchange (ETDEWEB)

    Sharma, S.K.; Srinivasamurthy, N.; Agrawal, B.L. [Power Systems Group, ISRO Satellite Centre, Bangalore (India)


    Observed reverse current-voltage characteristics of the single crystal silicon and gallium arsenide solar cells have been analyzed. Physical mechanisms behind the junction break-down in silicon cells and current break-down in gallium arsenide cells have been identified. Preliminary estimates of the diffusion capacitance in GaAs cells have been presented

  11. NREL preprints for the 23rd IEEE Photovoltaic Specialists Conference

    Energy Technology Data Exchange (ETDEWEB)

    Fitzgerald, M. [ed.


    Topics covered include various aspects of solar cell fabrication and performance. Aluminium-gallium arsenides, cadmium telluride, amorphous silicon, and copper-indium-gallium selenides are all characterized in their applicability in solar cells.

  12. High-power X- and Ka-band Gallium Nitride Amplifiers with Exceptional Efficiency Project (United States)

    National Aeronautics and Space Administration — Achieving very high-power amplification with maximum efficiency at X- and Ka-band is challenging using solid-state technology. Gallium Arsenide (GaAs) has been the...

  13. Activities of the Solid State Physics Research Institute (United States)


    Topics addressed include: muon spin rotation; annealing problems in gallium arsenides; Hall effect in semiconductors; computerized simulation of radiation damage; single-nucleon removal from Mg-24; and He-3 reaction at 200 and 400 MeV.


    A process was developed for the recovery of both arsenic and gallium from gallium arsenide polishing wastes. The economics associated with the current disposal techniques utilizing ferric hydroxide precipitation dictate that sequential recovery of toxic arsenic and valuble galliu...

  15. Inflammatory process decrease by gallium-aluminium-arsenide (GaAlAs) low intensity laser irradiation on postoperative extraction of impacted lower third molar; Reducao de processo inflamatorio com aplicacao de laser de arseneto de galio aluminio ({lambda}=830 nm) em pos-operatorio de exodontia de terceiros molares inferiores inclusos ou semi-inclusos

    Energy Technology Data Exchange (ETDEWEB)

    Atihe, Mauricio Martins


    This study aimed the observation of inflammatory process decrease by the use of GaAlAs Low Intensity Laser ({lambda}=830 nm; 40 mW) irradiation. Five patients were selected and submitted to surgery of impacted lower third molars, both right and left sides at different occasions. On a first stage, a tooth of a random chosen side - right or left - was extracted by conventional surgery, without LILT. The inflammatory process was measured at postoperative on the first, third and seventh days. This side was then called 'control side'. After 21 days, period in which the inflammatory process of the first surgery was terminated, the other side surgery took place, this time using LILT (4 J at four spots) at postoperative, first and third days. As the previous surgery, the inflammatory process was also measured at postoperative on the first, third and seventh days. This side was called 'experimental or lased side'. The inflammatory process was evaluated by measuring its four characteristic signs: swelling, pain, color and temperature. It was clearly observed a decrease for swelling, pain and color on the lased side which presented significant inference and descriptive statistics. It can be concluded that GaAlAs Low Intensity Laser ({lambda}=830 nm) can surely be used as an additional and important anti-inflammatory source on impacted lower third molar surgeries. (author)

  16. Temperature dependence of the lower critical field H{sub c1} in SmFeAsO{sub 0.9}F{sub 0.1} and Ba{sub 0.6}K{sub 0.4}Fe{sub 2}As{sub 2} iron-arsenide superconductors

    Energy Technology Data Exchange (ETDEWEB)

    Ren, C., E-mail: [National Laboratory for Superconductivity, Institute of Physics and Beijing National Laboratory for Condensed Matter Physics, Chinese Academy of Sciences, P.O. Box 603, Beijing 100190 (China); Wang, Z.S.; Luo, H.Q.; Yang, H.; Shan, L. [National Laboratory for Superconductivity, Institute of Physics and Beijing National Laboratory for Condensed Matter Physics, Chinese Academy of Sciences, P.O. Box 603, Beijing 100190 (China); Wen, H.H., E-mail: [National Laboratory for Superconductivity, Institute of Physics and Beijing National Laboratory for Condensed Matter Physics, Chinese Academy of Sciences, P.O. Box 603, Beijing 100190 (China)


    We report detailed measurements of the temperature dependence of the lower critical field H{sub c1} of the FeAs-based superconductor SmFeAsO{sub 0.9}F{sub 0.1} (Sm-1111) and Ba{sub 0.6}K{sub 0.4}Fe{sub 2}As{sub 2} (BaK-122) by global and local magnetization measurements. It is found that the obtained H{sub c1} for both kinds of samples show a weak temperature dependence in low temperature region. We argue that this weak T-dependence of H{sub c1} of Sm-1111 does not indicate a conventional s-wave state, instead it satisfies a T{sup 2} dependence up to a temperature of (0.5-0.6) T{sub c}. In contrast, the data of H{sub c1}(T) of BaK-122 superconductor clearly show a multigap behavior. Excellent fitting to the data can be reached with two s-wave superconducting gaps. Comparison of the absolute values of H{sub c1}(0) between Sm-1111 and BaK-122 shows a relatively large superfluid density for the latter. This may indicate the distinction between the electron doped and hole-doped FeAs-based superconductors.

  17. The friction behavior of semiconductors Si and GaAs in contact with pure metals (United States)

    Mishina, H.


    The friction behavior of the semiconductors silicon and gallium arsenide in contact with pure metals was studied. Five transition and two nontransition metals, titanium, tantalum, nickel, palladium, platinum, copper, and silver, slid on a single crystal silicon (111) surface. Four metals, indium, nickel, copper and silver, slid on a single crystal gallium arsenide (100) surface. Experiments were conducted in room air and in a vacuum of 10 to the minus 7th power N/sq cm (10 to the minus 9th power torr). The results indicate that the sliding of silicon on the transition metals exhibits relatively higher friction than for the nontransition metals in contact with silicon. There is a clear correlation between friction and Schottky barrier height formed at the metal silicon interface for the transition metals. Transition metals with a higher barrier height on silicon had a lower friction. The same effect of barrier height was found for the friction of gallium arsenide in contact with metals.

  18. Ge/GaAs heterostructure matrix detector

    Energy Technology Data Exchange (ETDEWEB)

    Kostamo, P. [Optoelectronics Laboratory, Helsinki University of Technology, P.O. Box 3500, 02015 HUT (Finland)]. E-mail:; Saeynaetjoki, A. [Optoelectronics Laboratory, Helsinki University of Technology, P.O. Box 3500, 02015 HUT (Finland); Knuuttila, L. [Optoelectronics Laboratory, Helsinki University of Technology, P.O. Box 3500, 02015 HUT (Finland); Lipsanen, H. [Optoelectronics Laboratory, Helsinki University of Technology, P.O. Box 3500, 02015 HUT (Finland); Andersson, H. [Oxford Instruments Analytical Oy (United Kingdom); Banzuzi, K. [Oxford Instruments Analytical Oy (United Kingdom); Nenonen, S. [Oxford Instruments Analytical Oy (United Kingdom); Sipilae, H. [Oxford Instruments Analytical Oy (United Kingdom); Vaijaervi, S. [Oxford Instruments Analytical Oy (United Kingdom); Lumb, D. [Science Payload and Advanced Concepts Office, ESA/ESTEC, Nordwijk (Netherlands)


    In this paper we present a novel germanium/gallium arsenide heterostructure X-ray detector with the active volume of germanium. The heterostructure is fabricated by depositing a gallium arsenide layer on a high-purity germanium wafer in a vertical metalorganic vapor-phase epitaxy system. This approach provides a new alternative to traditional lithium diffused n+ contact which is not easily applicable for finely pixelated detectors. The detector chip fabrication utilizing this kind of heterostructure is straightforward and only standard lithographic processes need to be applied. Electrical properties of the small format detector matrices are studied. Very low reverse biased current at 77 K is observed. It is concluded that the diffusion of arsenic in germanium results in an n-type germanium layer under the epitaxial gallium arsenide.

  19. Observation of the Spin Hall Effect in Semiconductors (United States)

    Kato, Y. K.; Myers, R. C.; Gossard, A. C.; Awschalom, D. D.


    Electrically induced electron-spin polarization near the edges of a semiconductor channel was detected and imaged with the use of Kerr rotation microscopy. The polarization is out-of-plane and has opposite sign for the two edges, consistent with the predictions of the spin Hall effect. Measurements of unstrained gallium arsenide and strained indium gallium arsenide samples reveal that strain modifies spin accumulation at zero magnetic field. A weak dependence on crystal orientation for the strained samples suggests that the mechanism is the extrinsic spin Hall effect.

  20. Space station automation study: Automation requriements derived from space manufacturing concepts,volume 2 (United States)


    Automation reuirements were developed for two manufacturing concepts: (1) Gallium Arsenide Electroepitaxial Crystal Production and Wafer Manufacturing Facility, and (2) Gallium Arsenide VLSI Microelectronics Chip Processing Facility. A functional overview of the ultimate design concept incoporating the two manufacturing facilities on the space station are provided. The concepts were selected to facilitate an in-depth analysis of manufacturing automation requirements in the form of process mechanization, teleoperation and robotics, sensors, and artificial intelligence. While the cost-effectiveness of these facilities was not analyzed, both appear entirely feasible for the year 2000 timeframe.

  1. A Study of Ga(.47)In(.53)As and Al(.48)In(.52)As for Very High Frequency Device Applications. (United States)


    GaInAs/AlInAs modulation doped structures grown by molecular beam epitaxy (MBE) were studied. The parameters of the MBE growth were adjusted to give high room temperature mobilities (-12000 sq cm/v-sec) and high sheet electron concentrations 2 x 10 to the 12th power per sq cm. Because of higher electron velocities and high conductivities GaInAs modulation doped transistors should be significantly higher speed than those of GaAs. Originator-Supplied keywords include: Gallium indium arsenide, Aluminum indium arsenide, Indium phosphide, Modulation

  2. Semiconducting III-V compounds

    CERN Document Server

    Hilsum, C; Henisch, Heinz R


    Semiconducting III-V Compounds deals with the properties of III-V compounds as a family of semiconducting crystals and relates these compounds to the monatomic semiconductors silicon and germanium. Emphasis is placed on physical processes that are peculiar to III-V compounds, particularly those that combine boron, aluminum, gallium, and indium with phosphorus, arsenic, and antimony (for example, indium antimonide, indium arsenide, gallium antimonide, and gallium arsenide).Comprised of eight chapters, this book begins with an assessment of the crystal structure and binding of III-V compounds, f

  3. Fast Clock Recovery for Digital Communications (United States)

    Tell, R. G.


    Circuit extracts clock signal from random non-return-to-zero data stream, locking onto clock within one bit period at 1-gigabitper-second data rate. Circuit used for synchronization in opticalfiber communications. Derives speed from very short response time of gallium arsenide metal/semiconductor field-effect transistors (MESFET's).

  4. Suitability of integrated protection diodes from diverse semiconductor technologies

    NARCIS (Netherlands)

    Wanum, van Maurice; Lebouille, Tom; Visser, Guido; Vliet, van Frank E.


    Abstract In this article diodes from three different semiconductor technologies are compared based on their suitability to protect a receiver. The semiconductor materials involved are silicon, gallium arsenide and gallium nitride. The diodes in the diverse semiconductor technologies themselves are c

  5. Suitability of integrated protection diodes from diverse semiconductor technologies

    NARCIS (Netherlands)

    Wanum, M. van; Lebouille, T.T.N.; Visser, G.C.; Vliet, F.E. van


    In this article diodes from three different semiconductor technologies are compared based on their suitability to protect a receiver. The semiconductor materials involved are Silicon, Gallium Arsenide and Gallium Nitride. The diodes in the diverse semiconductor technologies themselves are close in p

  6. Heat load of a GaAs photocathode in an SRF electron gun

    Institute of Scientific and Technical Information of China (English)

    王尔东; 赵夔; JSrg Kewisch; Ilan Ben-Zvi; Andrew Burrill; Trivini Rao; 吴琼; Animesh Jain; Ramesh Gupta; Doug Holmes


    A great deal of effort has been made over the last decades to develop a better polarized electron source for high energy physics. Several laboratories operate DC guns with a gallium arsenide photocathode, which yield a highly polarized electron beam. Howe

  7. Efficient frequency comb generation in AlGaAs-on-insulator

    DEFF Research Database (Denmark)

    Pu, Minhao; Ottaviano, Luisa; Semenova, Elizaveta;


    The combination of nonlinear and integrated photonics enables Kerr frequency comb generation in stable chip-based microresonators. Such a comb system will revolutionize applications, including multi-wavelength lasers, metrology, and spectroscopy. Aluminum gallium arsenide (AlGaAs) exhibits very h...

  8. Simple intrinsic defects in InAs :

    Energy Technology Data Exchange (ETDEWEB)

    Schultz, Peter Andrew


    This Report presents numerical tables summarizing properties of intrinsic defects in indium arsenide, InAs, as computed by density functional theory using semi-local density functionals, intended for use as reference tables for a defect physics package in device models.

  9. IMPATT diodes. Citations from the NTIS data base (United States)

    Reed, W. E.


    Government sponsored research reports are cited covering the design, characterization, and applications of IMPATT diodes. Topics include reliability, power handling, properties, noise, fabrication, and radiation effects. The use of silicon and gallium arsenide IMPATT diodes for microwave generation and amplification is included. This updated bibliography contains 182 abstracts, 14 of which are new entries to the previous edition.

  10. Growth of electronic materials in microgravity (United States)

    Matthiesen, D. H.


    A growth experiment aimed at growing two selenium-doped gallium arsenide crystals, each of which are one inch in diameter and 3.45 inches in length, is described. Emphasis is placed on the effect of microgravity on the segregation behavior of electronic materials. The lessons learned from the 1975 ASTP mission have been incorporated in this experiment.

  11. Growth and Characterization of In(1-x)Ga(x)As(y)P(1-y) and GaAs Using Molecular Beam Epitaxy. (United States)


    110. W. Walukiewicz, L. Lagowski, L. Jastrzebski, M. Lichtengteiger, and H.C. Gatos , "Electron Mobility and Free-Carrier Absorption in GaAs...Arsenide," Soy . Phys. Semicomd., 8, pp. 311-316 (1974). 118. D.W. Covington, E.L. Meeks, and W.H. Hicklin (unpublished report, 31 July 1979). 115 119

  12. Unconventional superconductivity in Ba(0.6)K(0.4)Fe2As2 from inelastic neutron scattering. (United States)

    Christianson, A D; Goremychkin, E A; Osborn, R; Rosenkranz, S; Lumsden, M D; Malliakas, C D; Todorov, I S; Claus, H; Chung, D Y; Kanatzidis, M G; Bewley, R I; Guidi, T


    A new family of superconductors containing layers of iron arsenide has attracted considerable interest because of their high transition temperatures (T(c)), some of which are >50 K, and because of similarities with the high-T(c) copper oxide superconductors. In both the iron arsenides and the copper oxides, superconductivity arises when an antiferromagnetically ordered phase has been suppressed by chemical doping. A universal feature of the copper oxide superconductors is the existence of a resonant magnetic excitation, localized in both energy and wavevector, within the superconducting phase. This resonance, which has also been observed in several heavy-fermion superconductors, is predicted to occur when the sign of the superconducting energy gap takes opposite values on different parts of the Fermi surface, an unusual gap symmetry which implies that the electron pairing interaction is repulsive at short range. Angle-resolved photoelectron spectroscopy shows no evidence of gap anisotropy in the iron arsenides, but such measurements are insensitive to the phase of the gap on separate parts of the Fermi surface. Here we report inelastic neutron scattering observations of a magnetic resonance below T(c) in Ba(0.6)K(0.4)Fe(2)As(2), a phase-sensitive measurement demonstrating that the superconducting energy gap has unconventional symmetry in the iron arsenide superconductors.

  13. Luminescence of Lanthanides and Actinides Implanted into Binary III-V semiconductors and AlGaAs (United States)


    16th International Symposium on Gallium Arsenide and Related Compounds, 25-29 Sep1 1989, 1ruiz~a, agano, Japan. Refereed paper to appear in ~Uyr...valve on the cryostat and using a Lakeshore Cryogenics Model DRC - 80C digital temperature contoller with a calibrated GaAs diode and three 3 W heaters

  14. JPRS Report Africa (Sub-Sahara) (United States)


    DISTRIBUTION STATEMENT A Approved for public releases Dfanäbatloa Unlimited REPRODUCED BY U.S. DEPARTMENT OF COMMERCE NATIONAL TECHNICAL...Carina La Grange; THE STAR, 3 Nov 8/j ^ S&T Gallium Arsenide Quantum Well Described [ ELECTRONIQUE ACTUALITTES, 18 Sep 87] 34 ZAMBIA Farmers

  15. Response of superconductivity and crystal structure of LiFeAs to hydrostatic pressure. (United States)

    Mito, Masaki; Pitcher, Michael J; Crichton, Wilson; Garbarino, Gaston; Baker, Peter J; Blundell, Stephen J; Adamson, Paul; Parker, Dinah R; Clarke, Simon J


    On the application of hydrostatic pressures of up to 1.3 GPa, the superconducting transition temperatures (T(c)) of samples of LiFeAs are lowered approximately monotonically at approximately -2 K GPa(-1). Measurements of the X-ray powder diffraction pattern at hydrostatic pressures of up to 17 GPa applied by a He gas pressure medium in a diamond anvil cell reveal a bulk modulus for LiFeAs of 57.3(6) GPa which is much smaller than that of other layered arsenide and oxyarsenide superconductors. LiFeAs also exhibits much more isotropic compression than other layered iron arsenide superconductors. The higher and more isotropic compressibility is presumably a consequence of the small size of the lithium ion. At ambient pressure the FeAs(4) tetrahedra are the most compressed in the basal plane of those in any of the superconducting iron arsenides. On increasing the pressure the Fe-Fe distance contracts more rapidly than the Fe-As distance so that the FeAs(4) tetrahedra become even more distorted from the ideal tetrahedral shape. The decrease in T(c) with applied pressure is therefore consistent with the observations that in the iron arsenides and related materials investigated thus far, T(c) is maximized for a particular electron count when the FeAs(4) tetrahedra are close to regular.

  16. SSI/MSI/LSI/VLSI/ULSI. (United States)

    Alexander, George


    Discusses small-scale integrated (SSI), medium-scale integrated (MSI), large-scale integrated (LSI), very large-scale integrated (VLSI), and ultra large-scale integrated (ULSI) chips. The development and properties of these chips, uses of gallium arsenide, Josephson devices (two superconducting strips sandwiching a thin insulator), and future…

  17. Intact mammalian cell function on semi-conductor nanowire arrays: new perspectives for cell-based biosensing

    DEFF Research Database (Denmark)

    Berthing, Trine; Bonde, Sara; Sørensen, Claus Birger;


    Nanowires (NWs) are attracting more and more interest due to their potential cellular applications, such as delivery of compounds or sensing platforms. Arrays of vertical indium-arsenide (InAs) NWs are interfaced with human embryonic kidney cells and rat embryonic dorsal root ganglion neurons. A ...

  18. Modulation of fluorescence signals from biomolecules along nanowires due to interaction of light with oriented nanostructures

    DEFF Research Database (Denmark)

    Frederiksen, Rune Schøneberg; Alarcon-Llado, Esther; Madsen, Morten H.


    High aspect ratio nanostructures have gained increasing interest as highly sensitive platforms for biosensing. Here, well-defined biofunctionalized vertical indium arsenide nanowires are used to map the interaction of light with nanowires depending on their orientation and the excitation waveleng...

  19. Low temperature transport in p-doped InAs nanowires

    DEFF Research Database (Denmark)

    Upadhyay, Shivendra; Jespersen, Thomas Sand; Madsen, Morten Hannibal;


    We present low temperature electrical measurements of p-type Indium Arsenide nanowires grown via molecular beam epitaxy using Beryllium as a dopant. Growth of p-type wires without stacking faults is demonstrated. Devices in field-effect geometries exhibit ambipolar behavior, and the temperature...

  20. Attosecond Electron Processes in Materials: Excitons, Plasmons, and Charge Dynamics (United States)


    carrier dynamics in gallium arsenide thin films, and real time investigations of plasmon dynamics in SiO2 covered gold nanospheres. Moreover, the...Measurement of Interlayer Screening Length of Layered Graphene by Plasmonic Nanostructure Resonances,” J. Phys. Chem. C 117, 22211 (2013). 21. P. M

  1. High-temperature optically activated GaAs power switching for aircraft digital electronic control (United States)

    Berak, J. M.; Grantham, D. H.; Swindal, J. L.; Black, J. F.; Allen, L. B.


    Gallium arsenide high-temperature devices were fabricated and assembled into an optically activated pulse-width-modulated power control for a torque motor typical of the kinds used in jet engine actuators. A bipolar heterojunction phototransistor with gallium aluminum arsenide emitter/window, a gallium arsenide junction field-effect power transistor and a gallium arsenide transient protection diode were designed and fabricated. A high-temperature fiber optic/phototransistor coupling scheme was implemented. The devices assembled into the demonstrator were successfully tested at 250 C, proving the feasibility of actuator-located switching of control power using optical signals transmitted by fibers. Assessments of the efficiency and technical merits were made for extension of this high-temperature technology to local conversion of optical power to electrical power and its control at levels useful for driving actuators. Optical power sources included in the comparisons were an infrared light-emitting diode, an injection laser diode, tungsten-halogen lamps and arc lamps. Optical-to-electrical power conversion was limited to photovoltaics located at the actuator. Impedance matching of the photovoltaic array to the load was considered over the full temperature range, -55 C to 260 C. Loss of photovoltaic efficiency at higher temperatures was taken into account. Serious losses in efficiency are: (1) in the optical source and the cooling which they may require in the assumed 125 C ambient, (2) in the decreased conversion efficiency of the gallium arsenide photovoltaic at 260 C, and (3) in impedance matching. Practical systems require improvements in these areas.

  2. Structural and magnetic phase transitions in triclinic Ca10(FeAs)10(Pt3As8). (United States)

    Stürzer, T; Friederichs, G M; Luetkens, H; Amato, A; Klauss, H-H; Johrendt, Dirk


    We report the structural and magnetic phase transitions of triclinic Ca10(FeAs)10(Pt3As8), which is the parent compound of the 1038-type iron-arsenide superconductors. High-resolution x-ray diffraction reveals splitting of the in-plane (a,b) lattice parameters at T(s) ≈ 120 K. Platinum-doping weakens the distortion and shifts the transition temperature to 80 K in Ca10(Fe(1-x)Pt(x)As)10(Pt3As8) with x = 0.03. μSR experiments show the onset of magnetic order near T and a broad magnetic phase transition. The structural transition involves no reduction of the space group symmetry in contrast to the other parent compounds of iron-arsenide superconductors; nevertheless the local fourfold symmetry of the FeAs-layers in Ca10(FeAs)10(Pt3As8) is broken.

  3. Multi-spectral optical absorption in substrate-free nanowire arrays

    Energy Technology Data Exchange (ETDEWEB)

    Zhang, Junpeng; Chia, Andrew; Boulanger, Jonathan; LaPierre, Ray, E-mail: [Department of Engineering Physics, McMaster University, 1280 Main St. West, Hamilton, Ontario L8S 4L7 (Canada); Dhindsa, Navneet; Khodadad, Iman; Saini, Simarjeet [Department of Electrical and Computer Engineering, University of Waterloo, 200 University Ave West, Waterloo, Ontario N2L 3G1 (Canada); Waterloo Institute of Nanotechnology, University of Waterloo, 200 University Ave West, Waterloo, Ontario N2L 3G1 (Canada)


    A method is presented of fabricating gallium arsenide (GaAs) nanowire arrays of controlled diameter and period by reactive ion etching of a GaAs substrate containing an indium gallium arsenide (InGaP) etch stop layer, allowing the precise nanowire length to be controlled. The substrate is subsequently removed by selective etching, using the same InGaP etch stop layer, to create a substrate-free GaAs nanowire array. The optical absorptance of the nanowire array was then directly measured without absorption from a substrate. We directly observe absorptance spectra that can be tuned by the nanowire diameter, as explained with rigorous coupled wave analysis. These results illustrate strong optical absorption suitable for nanowire-based solar cells and multi-spectral absorption for wavelength discriminating photodetectors. The solar-weighted absorptance above the bandgap of GaAs was 94% for a nanowire surface coverage of only 15%.

  4. Performance measurement of low concentration ratio solar array for space application (United States)

    Mills, M. W.


    The measured performance of a silicon and a gallium arsenide low concentration ratio solar array (LCRSA) element is presented. The element characteristics measured in natural sunlight are off pointing performance and response to mechanical distortions. Laboratory measurements of individual silicon and gallium-arsenide solar cell assemblies are also made. The characteristics measured in the laboratory involved responses to temperature and intensity variations as well as to the application of reverse bias potentials. The element design details covered include the materials, the solar cells, and the rationale for selecting these specific characteristics. The measured performance characteristics are contrasted with the predicted values for both laboratory testing and high altitude natural sunlight testing. Excellent agreement between analytical predictions and measured performance is observed.

  5. Modelling and fabrication of GaAs photonic-crystal cavities for cavity quantum electrodynamics. (United States)

    Khankhoje, U K; Kim, S-H; Richards, B C; Hendrickson, J; Sweet, J; Olitzky, J D; Khitrova, G; Gibbs, H M; Scherer, A


    In this paper, we present recent progress in the growth, modelling, fabrication and characterization of gallium arsenide (GaAs) two-dimensional (2D) photonic-crystal slab cavities with embedded indium arsenide (InAs) quantum dots (QDs) that are designed for cavity quantum electrodynamics (cQED) experiments. Photonic-crystal modelling and device fabrication are discussed, followed by a detailed discussion of different failure modes that lead to photon loss. It is found that, along with errors introduced during fabrication, other significant factors such as the presence of a bottom substrate and cavity axis orientation with respect to the crystal axis, can influence the cavity quality factor (Q). A useful diagnostic tool in the form of contour finite-difference time domain (FDTD) is employed to analyse device performance.

  6. Normal-state charge dynamics in doped BaFe2As2: Roles of doping and necessary ingredients for superconductivity (United States)

    Nakajima, M.; Ishida, S.; Tanaka, T.; Kihou, K.; Tomioka, Y.; Saito, T.; Lee, C. H.; Fukazawa, H.; Kohori, Y.; Kakeshita, T.; Iyo, A.; Ito, T.; Eisaki, H.; Uchida, S.


    In high-transition-temperature superconducting cuprates and iron arsenides, chemical doping plays an important role in inducing superconductivity. Whereas in the cuprate case, the dominant role of doping is to inject charge carriers, the role for the iron arsenides is complex owing to carrier multiplicity and the diversity of doping. Here, we present a comparative study of the in-plane resistivity and the optical spectrum of doped BaFe2As2, which allows for separation of coherent (itinerant) and incoherent (highly dissipative) charge dynamics. The coherence of the system is controlled by doping, and the doping evolution of the charge dynamics exhibits a distinct difference between electron and hole doping. It is found in common with any type of doping that superconductivity with high transition temperature emerges when the normal-state charge dynamics maintains incoherence and when the resistivity associated with the coherent channel exhibits dominant temperature-linear dependence. PMID:25077444

  7. Electron correlations in Mn(x)Ga(1-x)A(s)as seen by resonant electron spectroscopy and dynamical mean field theory. (United States)

    Di Marco, I; Thunström, P; Katsnelson, M I; Sadowski, J; Karlsson, K; Lebègue, S; Kanski, J; Eriksson, O


    After two decades since the discovery of ferromagnetism in manganese-doped gallium arsenide, its origin is still debated, and many doubts are related to the electronic structure. Here we report an experimental and theoretical study of the valence electron spectrum of manganese-doped gallium arsenide. The experimental data are obtained through the differences between off- and on-resonance photo emission data. The theoretical spectrum is calculated by means of a combination of density-functional theory in the local density approximation and dynamical mean field theory, using exact diagonalization as impurity solver. Theory is found to accurately reproduce measured data and illustrates the importance of correlation effects. Our results demonstrate that the manganese states extend over a broad range of energy, including the top of the valence band, and that no impurity band splits-off from the valence band edge, whereas the induced holes seem located primarily around the manganese impurity.

  8. Zero-field optical manipulation of magnetic ions in semiconductors. (United States)

    Myers, R C; Mikkelsen, M H; Tang, J-M; Gossard, A C; Flatté, M E; Awschalom, D D


    Controlling and monitoring individual spins is desirable for building spin-based devices, as well as implementing quantum information processing schemes. As with trapped ions in cold gases, magnetic ions trapped on a semiconductor lattice have uniform properties and relatively long spin lifetimes. Furthermore, diluted magnetic moments in semiconductors can be strongly coupled to the surrounding host, permitting optical or electrical spin manipulation. Here we describe the zero-field optical manipulation of a few hundred manganese ions in a single gallium arsenide quantum well. Optically created mobile electron spins dynamically generate an energy splitting of the ion spins and enable magnetic moment orientation solely by changing either photon helicity or energy. These polarized manganese spins precess in a transverse field, enabling measurements of the spin lifetimes. As the magnetic ion concentration is reduced and the manganese spin lifetime increases, coherent optical control and readout of single manganese spins in gallium arsenide should be possible.

  9. Effective Ex-situ Fabrication of F-Doped SmFeAsO Wire for High Transport Critical Current Density (United States)

    Fujioka, Masaya; Kota, Tomohiro; Matoba, Masanori; Ozaki, Toshinori; Takano, Yoshihiko; Kumakura, Hiroaki; Kamihara, Yoichi


    We demonstrate the fabrication of superconducting SmFeAsO1-xFx (Sm-1111) wires by using the ex-situ powder-in-tube technique. Sm-1111 powder and a binder composed of SmF3, samarium arsenide, and iron arsenide were used to synthesize the superconducting core. Although the F content of Sm-1111 is reduced in the process of ex-situ fabrication, the binder compensates by sufficiently supplementing the F content, thereby preventing a decrease in the superconducting transition temperature and a shrinkage of the superconducting volume fraction. Thus, in the superconducting Sm-1111 wire with the binder, the transport critical current density reaches the highest value of ˜4 kA/cm2 at 4.2 K.

  10. Coherent Cancellation of Photothermal Noise in GaAs/Al$_{0.92}$Ga$_{0.08}$As Bragg Mirrors

    CERN Document Server

    Chalermsongsak, Tara; Cole, Garrett D; Follman, David; Seifert, Frank; Arai, Koji; Gustafson, Eric K; Smith, Joshua R; Aspelmeyer, Markus; Adhikari, Rana X


    Thermal noise is a limiting factor in many high-precision optical experiments. A search is underway for novel optical materials with reduced thermal noise. One such pair of materials, gallium arsenide and aluminum-alloyed gallium arsenide (collectively referred to as AlGaAs), shows promise for its low Brownian noise when compared to conventional materials such as silica and tantala. However, AlGaAs has the potential to produce a high level of thermo-optic noise. We have fabricated a set of AlGaAs crystalline coatings, transferred to fused silica substrates, whose layer structure has been optimized to reduce thermo-optic noise by inducing coherent cancellation of the thermoelastic and thermorefractive effects. By measuring the photothermal transfer function of these mirrors, we find evidence that this optimization has been successful.

  11. Commercial-Off-The-Shelf (COTS) Indirect Energy Conversion Isotope (IDEC) Design Structure and Power Management (United States)


    arsenide GPS global positioning system 3H tritium iBAT isotope batteries InGaP indium gallium phosphide LiSoCl2 lithium thionyl chloride PV... lithium thionyl chloride (LiSoCl2), the operating energy starts off comparably well compared with 3H, but a steep drop-off occurs near the end of life...The internal assembly and structure replicate a typical lithium battery design. The overall design, material selection, and components of the battery

  12. The growth of materials processing in space - A history of government support for new technology (United States)

    Mckannan, E. C.


    Development of a given technology for national defense and large systems developments when the task is too large or risky for entrepreneurs, yet is clearly in the best interest of the nation are discussed. Advanced research to identify areas of interest was completed. Examples of commercial opportunities are the McDonnell-Douglas Corporation purification process for pharmaceutical products and the Microgravity Research Associates process for growing gallium arsenide crystals in space.

  13. Potential means of support for materials processing in space. A history of government support for new technology (United States)

    Mckannan, E. C.


    Development of a given technology for national defense and large systems developments when the task is too large or risky for entrepreneurs, yet is clearly in the best interest of the nation are discussed. Advanced research to identify areas of interest was completed. Examples of commercial opportunities are the McDonnell-Douglas Corporation purification process for pharmaceutical products and the Microgravity Research Associates process for growing gallium arsenide crystals in space.

  14. Beer-Lambert-Law Parametric Model of Reflectance Spectra for Dyed Fabrics (United States)


    electromagnetic spectrum. Devices such as Gen 3 Extended Blue Night Vision (NV) devices have increased spectral response from the visual to NIR...the fact that certain NIR dye treatments fail to provide effective contrast matching in the SWIR spectrum. Advances in detector technologies, e.g...region and an Indium Gallium Arsenide (InGaAs) detector for the NIR- SWIR (860 - 2500 nm) region. Radiation sources included a deuterium lamp for

  15. Air Force Research Laboratory Success Stories: A Review of 1997/1998 (United States)


    within JMASS Architecture ................ 39 Space Vehicles Page # Sodium- Sulfer Battery Cells Offer Substantial Advantages for Energy Storage...arsenide on germanium (GaAs/Ge) and the lithium -thionyl chloride (Li-SOC12) batteries powered the Mars rover and the lander carried by the Pathfinder... lithium niobate to split a pump photon at 1.064 Ptm into a signal photon at 1.45 jtm and an idler photon at 4 ^tm. The wavelengths of the signal and

  16. High T(c) electron doped Ca10(Pt3As8)(Fe2As2)5 and Ca10(Pt4As8)(Fe2As2)5 superconductors with skutterudite intermediary layers. (United States)

    Ni, Ni; Allred, Jared M; Chan, Benny C; Cava, Robert Joseph


    It has been argued that the very high transition temperatures of the highest T(c) cuprate superconductors are facilitated by enhanced CuO(2) plane coupling through heavy metal oxide intermediary layers. Whether enhanced coupling through intermediary layers can also influence T(c) in the new high T(c) iron arsenide superconductors has never been tested due the lack of appropriate systems for study. Here we report the crystal structures and properties of two iron arsenide superconductors, Ca(10)(Pt(3)As(8))(Fe(2)As(2))(5) (the "10-3-8 phase") and Ca(10)(Pt(4)As(8))(Fe(2)As(2))(5) (the "10-4-8 phase"). Based on -Ca-(Pt(n)As(8))-Ca-Fe(2)As(2)- layer stacking, these are very similar compounds for which the most important differences lie in the structural and electronic characteristics of the intermediary platinum arsenide layers. Electron doping through partial substitution of Pt for Fe in the FeAs layers leads to T(c) of 11 K in the 10-3-8 phase and 26 K in the 10-4-8 phase. The often-cited empirical rule in the arsenide superconductor literature relating T(c) to As-Fe-As bond angles does not explain the observed differences in T(c) of the two phases; rather, comparison suggests the presence of stronger FeAs interlayer coupling in the 10-4-8 phase arising from the two-channel interlayer interactions and the metallic nature of its intermediary Pt(4)As(8) layer. The interlayer coupling is thus revealed as important in enhancing T(c) in the iron pnictide superconductors.

  17. Electrosprayed Heavy Ion and Nanodrop Beams for Surface Engineering and Electrical Propulsion (United States)


    arsenide, gallium antimonide, gallium nitride and silicon carbide; studied the role of the liquid’s composition on the sputtering of silicon; study...hence can easily be contaminated , especially as they tend to hydrolyze when stored in the presence of water for a significant time. The other anions...emissions are very infrequent. 4.4 Water Contamination of Ionic Liquids Additional molecular dynamics simulations have been run with water introduced into

  18. Critical Review and Technology Assessments, 󈨟-󈨠 (United States)



  19. SPS Energy Conversion Power Management Workshop (United States)


    Energy technology concerning photovoltaic conversion, solar thermal conversion systems, and electrical power distribution processing is discussed. The manufacturing processes involving solar cells and solar array production are summarized. Resource issues concerning gallium arsenides and silicon alternatives are reported. Collector structures for solar construction are described and estimates in their service life, failure rates, and capabilities are presented. Theories of advanced thermal power cycles are summarized. Power distribution system configurations and processing components are presented.

  20. Experimental '' of As at 170, 200, 250 and 300 K from the Bijvoet pairs of GaAs

    Indian Academy of Sciences (India)

    G Raja Sudha; K Vimala Devi; D Arthi; S Prasanna Subramanian; N Srinivasan; R Saravanan


    Anomalous dispersion effects lead to the modification of the measured X-ray structure factors. In this work, we have determined the imaginary part of the anomalous dispersion correction terms ('' ) of arsenide atom (As), through the X-ray data collected using spherical single crystal of GaAs, at various temperatures, i.e. 170, 200, 250 and 300 K. It is stressed that more measurements of '' of the elements are needed to confirm the theoretical calculations.

  1. Pilot-Vehicle Interface (United States)


    mask CRTs. 4.2.8 Light Emitting Diode Displays The Light Emitting Diode (LED) is a semiconductor diode, based on the Gallium Arsenide (GaAs) compound...icons versus alphanumerics for cockpit displays. Camacho , Steiner, and Berson (1990) found that reaction times were faster for icons. Possibly this...preference for icons. Additional findings indicate (Steiner and Camacho 1989): * Increasing use of icons adds pictorial realism to displays and aids

  2. Stability of the GaAs based Hall sensors irradiated by gamma quanta


    Gradoboev, Aleksandr Vasilyevich; Karlova, G. F.


    The present work is aimed at investigation of the stability of the GaAsbased Hall sensors (pickups) to irradiation by gamma quanta. The examined objects are the gallium arsenide based Hall sensors manufactured on thin active layers by the methods of vaporphase epitaxy (VPE), molecular beam epitaxy, and ion implantation. Our research methodology involves measurements of the volt-ampere characteristics (VACs) of all sensors for different values of the supply voltage polarity and electron concen...

  3. Growing Single Crystals of Compound Semiconductors (United States)

    Naumann, Robert J.; Lehoczky, Sandor L.; Frazier, Donald O.


    Defect reduced by preventing melt/furnace contact and suppressing convention. Large crystals of compound semiconductors with few defects grown by proposed new method. Such materials as gallium arsenide and cadmium telluride produced, with quality suitable for very-large-scale integrated circuits or for large focal-plane arrays of photodetectors. Method used on small scale in Earth gravity, but needs microgravity to provide crystals large enough for industrial use.

  4. 0.15-micron Gallium Nitride (GaN) Microwave Integrated Circuit Designs Submitted to TriQuint Semiconductor for Fabrication (United States)


    arsenide GaN gallium nitride LNA low-noise amplifier MMIC monolithic microwave integrated circuit PA power amplifier HEMT high electron mobility...0.15-µm Gallium Nitride ( GaN ) Microwave Integrated Circuit Designs Submitted to TriQuint Semiconductor for Fabrication by John Penn ARL...MD 20783-1197 ARL-TN-0496 September 2012 0.15-µm Gallium Nitride ( GaN ) Microwave Integrated Circuit Designs Submitted to TriQuint

  5. Optical Processing and Control (United States)


    interfaces(7]. The effect has been used to provide evidence for surface states on semiconductors using germanium and silicon surfaces(8]. 3.1 References...8f, c ndr where Sf& is the beat frequency of the ring laser due to the moving medium, f is the frequency of the propagating beam, c is the velocity...Tantalate Gallium Arsenide Phosphide Tantalum Pentoxide Gallium Aluminum Nitride Niobium Pentoxide Indium Phosphide Silicon Other III-V, II-VI, etc

  6. Hot Electron Effects of Importance for Micron and Submicron Devices. (United States)


    semiconductor larger. At such field strengths silicon have a picture of a highly mobile fluid gallium arsenide.2 For a free particle, and germanium ...into the AI.Ga,_,As layers is taken into account. The results of the calculations show that the threshold electric field for the onset of NDR and the...differential resistance ( NDR ) in semiconductor EFt position-dependent Quasi-Fermi level in the heterostructurestl]. The basic structure of this device

  7. Environmental Assessment: For the Testing and Evaluation of Directed Energy System Using Laser Technology, Edwards Air Force Base (United States)


    yttrium lithium 15 fluoride (YLF), titanium -sapphire], semiconductor [gallium arsenide], or dye); 16 • Mode of Operation (continuous wave, pulsed [ɘ.25... pickling liquor, unspent acids, unspent alkalis, and 21 unrinsed empty containers of iron or steel used for pesticides or other hazardous chemicals. 22...aluminum, titanium , wood, plastic, 13 or steel. These target boards would have attached sensors and/or data collection array to support the test 14 and

  8. Fabrication and optical characterization of macroporous silicon photonic crystals


    Balbo, Matteo


    The computer revolution experienced in recent years has been possible thanks to semiconductor materials, such as silicon, germanium and gallium arsenide. The success of the silicon-based microelectronics is due to the ability to integrate multiple elements on the same chip such as processors, memories, and interfaces. However, the increasing miniaturization and the realization of faster devices have revealed the difficulty to overcome the intrinsic limits of these materials. For example, devi...

  9. Measurement of silicon and GaAs/Ge solar cells ac parameters

    Energy Technology Data Exchange (ETDEWEB)

    Deshmukh, M.P.; Nagaraju, J. [Indian Institute of Science, Bangalore (India). Dept. of Instrumentation


    The ac parameters (cell capacitance and cell resistance) of Silicon (Si) and Gallium Arsenide (GaAs/Ge) solar cells are measured at different temperatures using time domain technique. The cell capacitance is calculated from the Open circuit voltage decay (OCVD) and the cell resistance from solar cell I-V characteristics measured under dark condition. It is observed that the solar cell capacitance increases whereas the cell resistance decreases with increase in temperature. (author)

  10. Impurity and Defect Behavior in High-Purity Epitaxial GaAs. (United States)


    Japanese Journal of Applied Physics 9, 156 (1970). -113- 11. T...Saito and F. Hasegawa, "Cause of the High Resis- tance Region at Vapour Epitaxial GaAs Layer-Sub- strate Interface", Japanese Journal of Applied Physics 10...Ryuzan, "Electrical Prop- erties of n-Type Gallium Arsenide at High Tempera- tures", Japanese Journal of Applied Physics 10, 392 (1971). 35. P.

  11. Thin film solar cells. (Latest citations from the NTIS bibliographic database). Published Search

    Energy Technology Data Exchange (ETDEWEB)



    The bibliography contains citations concerning research and development of high-efficiency and low-cost thin film solar cells. References discuss the design and fabrication of silicon, gallium arsenide, copper selenide, indium selenide, cadmium telluride, and copper indium selenide solar cells. Applications in space and utilities are examined. Government projects and foreign technology are also reviewed. (Contains 50-250 citations and includes a subject term index and title list.) (Copyright NERAC, Inc. 1995)

  12. Space station automation study. Automation requirements derived from space manufacturing concepts. Volume 1: Executive summary (United States)


    The two manufacturing concepts developed represent innovative, technologically advanced manufacturing schemes. The concepts were selected to facilitate an in depth analysis of manufacturing automation requirements in the form of process mechanization, teleoperation and robotics, and artificial intelligence. While the cost effectiveness of these facilities has not been analyzed as part of this study, both appear entirely feasible for the year 2000 timeframe. The growing demand for high quality gallium arsenide microelectronics may warrant the ventures.

  13. A RHEED/MBE-STM investigation of the static and dynamic InAs(001) surface (United States)

    Bomphrey, J. J.; Ashwin, M. J.; Jones, T. S.


    We report here the temperature-dependent incorporation kinetics of dimeric arsenic in InAs(001) homoepitaxy, using reflection high-energy electron diffraction (RHEED). Surface reconstructions, in combination with the RHEED investigation have provided insight into the growth of InAs(001), developing an accurate method of controlling the V:III ratio, which has been utilised to probe the low temperature epitaxial growth of indium arsenide epitaxial layers.

  14. Artificial Earth Satellites Designed and Fabricated by The Johns Hopkins University Applied Physics Laboratory. Revised (United States)


    first gallium arsenide solar cell was orbited on ANNA-lB. The predicted sublimation rates of biphenyl, camphor , and napthalene were contirmed in the...orientation of the gravity gradient because of the thrust of subliming biphenyl at the end of the 100-foot boom. This resulted in a 25 dB reduction in the...SDO 1600 APPLIED PHYSICS LABORATORY LAUREL MARYLAND Solar cell experiments Subliming materials experiment 352-bit magnetic core shift register memory

  15. Description of an Immersed Photovoltaic Concentrating Solar Power System


    Falbel, Gerald


    Recent advancements in photovoltaic solar cells made from Gallium Arsenide (GaAs) have shown that with concentration ratios greater than one solar constant, overall efficiencies up to 23% can be achieved. A second issue applicable to solar power systems for spacecraft is the cost driver, which requires that the efficiency/weight ratio be improved so that solar panels with high output, weighing less, will reduce payload weights, which, in turn, reduces launch costs. This has resulted in a "Fig...

  16. Electronic Structures and Magnetic Properties of CoN, NiN and CuN

    Institute of Scientific and Technical Information of China (English)

    WANG Hong-Bo; XUE De-Sheng


    @@ Electronic structures and magnetic properties of CoN, NiN and CuN in zinc-blende, rocksalt, nickel arsenide,wurtzite and caesium chloride structures have been calculated by employing a first-principle full-potential linearized muffin-tin orbital method with the generalized gradient approximation. The results reveal that the zinc-blende structure is the ground state for the three mononitrides.

  17. Interface dynamics and crystal phase switching in GaAs nanowires


    Jacobsson, Daniel; Panciera, Federico; Tersoff, Jerry; Reuter, Mark C.; Lehmann, Sebastian; Hofmann, Stephan; Dick, Kimberly A.; Ross, Frances M


    This is the author accepted manuscript. The final version is available from Nature Publishing Group via Controlled formation of non-equilibrium crystal structures is one of the most important challenges in crystal growth. Catalytically grown nanowires are ideal systems for studying the fundamental physics of phase selection, and could lead to new electronic applications based on the engineering of crystal phases. Here we image gallium arsenide (GaAs) n...

  18. Low power laser irradiation does not affect the generation of signals in a sensory receptor

    Energy Technology Data Exchange (ETDEWEB)

    Lundeberg, T.; Zhou, J.


    The effect of low power Helium-Neon (He-Ne) and Gallium-Arsenide (Ga-As) laser on the slowly adapting crustacean stretch receptor was studied. The results showed that low power laser irradiation did not affect the membrane potential of the stretch receptor. These results are discussed in relation to the use of low power laser irradiation on the skin overlaying acupuncture points in treatment of pain syndrome.

  19. Anisotropic magnetocapacitance in ferromagnetic-plate capacitors (United States)

    Haigh, J. A.; Ciccarelli, C.; Betz, A. C.; Irvine, A.; Novák, V.; Jungwirth, T.; Wunderlich, J.


    The capacitance of a parallel-plate capacitor can depend on the applied magnetic field. Previous studies have identified capacitance changes induced via classical Lorentz force or spin-dependent Zeeman effects. Here we measure a magnetization direction-dependent capacitance in parallel-plate capacitors where one plate is a ferromagnetic semiconductor, gallium manganese arsenide. This anisotropic magnetocapacitance is due to the anisotropy in the density of states dependent on the magnetization through the strong spin-orbit interaction.

  20. Advanced Space-Based Detectors (United States)


    unique optical properties produce an unexpectedly high opacity for an atomic monolayer. Recent advances in the fabrication techniques of graphene...3D – three-dimensional AEOSS – Advanced Electro- Optical Space Sensors AlGaAs – Aluminum/Galium/Arsenide AlGaSb – Aluminum/Galium/Antimonide CNL...SUPPLEMENTARY NOTES 14. ABSTRACT At the Air Force Research Laboratory, Space Vehicles Directorate, Advanced Electro- Optical Space Sensors (AEOSS) Group, we





    A numerical study is needed to gain insight into the growth mechanism and improve the reactor design or optimize the deposition condition in chemical vapor deposition (CVD). In this study, we have performed a numerical analysis of the deposition of gallium arsenide (GaAs) from trimethyl gallium (TMG) and arsine in a vertical CVD reactor. The effects of operating parameters, such as the rotation velocity of susceptor, inlet velocity, and inlet TMG fraction, are investigated and presented. The ...

  2. Use of a semiconductor-diode laser in urology (United States)

    Watson, Graham M.


    The gallium arsenide semiconductor laser can emit in the near infrared where the depth of penetration into tissue is great although scattering is less than with the Nd:YAG laser. The laser is highly compact. It runs off a normal electrical outlet with no cooling requirement. It is therefore quiet and convenient. The laser has been assessed in a wide variety of applications in our urological department.

  3. Spatial light modulation in compound semiconductor materials (United States)

    Cheng, Li-Jen (Inventor); Gheen, Gregory O. (Inventor); Partovi, Afshin (Inventor)


    Spatial light modulation (22) in a III-V single crystal (12), e.g., gallium arsenide, is achieved using the photorefractive effect. Polarization rotation created by beam coupling is utilized in one embodiment. In particular, information (16)on a control beam (14) incident on the crystal is transferred to an input beam (10), also incident on the crystal. An output beam (18) modulated in intensity is obtained by passing the polarization-modulated input beam through a polarizer (20).

  4. A semiconductor laser excitation circuit

    Energy Technology Data Exchange (ETDEWEB)

    Kaadzunari, O.; Masaty, K.


    A semiconductor laser excitation circuit is patented that is designed for operation in a pulsed mode with a high pulse repetition frequency. This circuit includes, in addition to a semiconductor laser, a high speed photodetector, a reference voltage source, a comparator, and a pulse oscillator and modulator. If the circuit is built using standard silicon integrated circuits, its speed amounts to several hundred megahertz, if it is constructed using gallium arsenide integrated circuits, its speed is several gigahertz.

  5. Investigation of Microwave Monolithic Integrated Circuit (MMIC) non-reciprocal millimeterwave components (United States)

    Talisa, S. H.; Krishnaswamy, S. V.; Adam, J. D.; Yoo, K. C.; Doyle, N. J.


    Two ferrite film deposition techniques were investigated in this program for possible use in the monolithic integration of Gallium Arsenide electronic and magnetic millimeter-wave devices; (1) spin-spray plating (SSP) of nickel zinc ferrite films, and (2) sputtering of barium hexaferrites with C-axis oriented normally to the film plane. The SSP technique potential for this application was demonstrated. Film structural characteristics were studied, as well as their adhesions to other substrates and the conditions for growth of thicker films. Multilayers totalling 25 microns in thickness were grown on semiconducting substrates. The SSP process occurs at about 100 C and was experimentally demonstrated not to damage Gallium arsenide MMIC devices. The magnetic characteristics of these films were comparable to ceramic materials. A scheme for the monolithic integration of magnetic and Gallium arsenide electronic devices was proposed and its feasibility experimentally demonstrated. The films showed higher dielectric loss than was desirable, possibly owing to high water content. A better drying technique is required. Barium ferrite films with C-axis texture were reproducibly grown on sapphire. Magnetic measurements yielded acceptable saturation magnetization and anisotrophy field. Ferromagnetic resonance was not observed, possibly due to broad linewidths.

  6. Heat load of a GaAs photocathode in an SRF electron gun

    Institute of Scientific and Technical Information of China (English)

    WANG Er-Dong; ZHAO Kui; J(o)rg Kewisch; Ilan Ben-Zvi; Andrew Burrill; Trivini Rao; WU Qiong; Animesh Jain; Ramesh Gupta; Doug Holmes


    A great deal of effort has been made over the last decades to develop a better polarized electron source for high energy physics. Several laboratories operate DC guns with a gallium arsenide photocathode, which yield a highly polarized electron beam. However, the beam's emittance might well be improved by using a superconducting radio frequency (SRF) electron gun, which delivers beams of a higher brightness than that from DC guns because the field gradient at the cathode is higher. SRF guns with metal and CsTe cathodes have been tested successfully. To produce polarized electrons, a Gallium-Arsenide photo-cathode must be used: an experiment to do so in a superconducting RF gun is under way at BNL. Since a bulk gallium arsenide (GaAs) photocathode is normal conducting, a problem arises from the heat load stemming from the cathode. We present our measurements of the electrical resistance of GaAs at cryogenic temperatures, a prediction of the heat load and verification by measuring the quality factor of the gun with and without the cathode at 2 K. We simulate heat generation and flow from the GaAs cathode using the ANSYS program. By following the findings with the heat load model, we designed and fabricated a new cathode holder (plug) to decrease the heat load from GaAs.

  7. Circuit quantum electrodynamics with a spin qubit. (United States)

    Petersson, K D; McFaul, L W; Schroer, M D; Jung, M; Taylor, J M; Houck, A A; Petta, J R


    Electron spins trapped in quantum dots have been proposed as basic building blocks of a future quantum processor. Although fast, 180-picosecond, two-quantum-bit (two-qubit) operations can be realized using nearest-neighbour exchange coupling, a scalable, spin-based quantum computing architecture will almost certainly require long-range qubit interactions. Circuit quantum electrodynamics (cQED) allows spatially separated superconducting qubits to interact via a superconducting microwave cavity that acts as a 'quantum bus', making possible two-qubit entanglement and the implementation of simple quantum algorithms. Here we combine the cQED architecture with spin qubits by coupling an indium arsenide nanowire double quantum dot to a superconducting cavity. The architecture allows us to achieve a charge-cavity coupling rate of about 30 megahertz, consistent with coupling rates obtained in gallium arsenide quantum dots. Furthermore, the strong spin-orbit interaction of indium arsenide allows us to drive spin rotations electrically with a local gate electrode, and the charge-cavity interaction provides a measurement of the resulting spin dynamics. Our results demonstrate how the cQED architecture can be used as a sensitive probe of single-spin physics and that a spin-cavity coupling rate of about one megahertz is feasible, presenting the possibility of long-range spin coupling via superconducting microwave cavities.

  8. Influence of Substrate Material on Radiation Characteristics of THz Photoconductive Emitters

    Directory of Open Access Journals (Sweden)

    Jens Klier


    Full Text Available We present in this paper spectral and spatial characteristics of terahertz emission from standard dipole antenna structures used as emitters depending on the substrate material. All antenna structures were lithographically fabricated on low-temperature (LT grown, few-micrometers-thick gallium arsenide (GaAs layers. To investigate the effect of the substrate material on the radiation pattern of terahertz beams, either semi-insulating gallium arsenide or high-resistivity silicon substrate wafers have been used. As detector a standard 40 µm long dipole antenna on a semi-insulating GaAs substrate with a low-temperature grown gallium arsenide layer on it has been employed; this configuration allows for broadband detection and is still efficient enough for the characterization purpose. Strong dependence of the radiation pattern on the substrate used for the terahertz source is demonstrated. The measured patterns and differences between the two cases of substrates are well explained by means of classical diffraction.

  9. High power solid state switches (United States)

    Gundersen, Martin


    We have successfully produced an optically triggered thyristor based in Gallium Arsenide, developed a model for breakdown, and are developing two related devices, including a Gallium Arsenide based static inductor thyristor. We are getting at the basic limitations of Gallium Arsenide for these applications, and are developing models for the physical processes that will determine device limitations. The previously supported gas phase work - resulting in the back-lighted thyratron (BLT) - has actually resulted in a very changed view of how switching can be accomplished, and this is impacting the design of important machines. The BLT is being studied internationally: in Japan for laser fusion and laser isotope separation. ITT has built a BLT that has switched 30 kA at 60 kV in testing at NSWC Dahlgren and the device is being commercialized by another American company. Versions of the switch are now being tested for excimer laser and other applications. Basically, the switch, which arose from pulse power physics studies at USC, can switch more current faster (higher di/dt), with less housekeeping, and with other advantageous properties. There are a large number of other new applications, include kinetic energy weapons, pulsed microwave sources and R.F. accelerators.

  10. Optical Distinctions Between Weyl Semimetal TaAs and Dirac Semimetal Na3Bi: An Ab Initio Investigation (United States)

    Dadsetani, Mehrdad; Ebrahimian, Ali


    We present ab initio a study on linear and nonlinear optical properties of topological semimetal Tantalum arsenide and Sodium bismuthate. The real and imaginary part of the dielectric function in addition to the energy loss spectra of TaAs and Na3Bi have been calculated within random phase approximation (RPA); then, the electron-hole interaction is included by solving the Bethe-Salpeter equation for the electron-hole Green's function. In spite of being in the single category of topological materials, we have found obvious distinction between linear optical responses of TaAs and Na3Bi at a high energy region where, in contrast to Na3Bi, Tantalum arsenide has excitonic peaks at 9 eV and 9.5 eV. It is remarkable that the excitonic effects in the high energy range of the spectrum are stronger than in the lower one. The dielectric function is overall red shifted compared with that of RPA approximation. The resulting static dielectric constants for Na3Bi are smaller than corresponding ones in TaAs. At a low energy region, the absorption intensity of TaAs is more than Na3Bi. The calculated second-order nonlinear optical susceptibilities χ ijk (2) ( ω) show that Tantalum arsenide acts as a Weyl semimetal, and has high values of nonlinear responses in the low energy region which makes it promising candidate for the second harmonic generation in the terahertz frequency region. In the low energy regime, optical spectra are dominated by the 2 ω intra-band contributions.

  11. Nonlinear THz spectroscopy on n-type GaAs

    Energy Technology Data Exchange (ETDEWEB)

    Gaal, Peter


    In this thesis, the ultrafast dynamics of conduction band electrons in semiconductors are investigated by nonlinear terahertz (THz) spectroscopy. In particular, n-doped gallium arsenide samples with doping concentrations in the range of 10{sup 16} cm{sup -3} to 10{sup 17} cm{sup -3} are studied. A novel source for the generation of intense THz radiation is developed which yields single-cycle THz transients with field amplitudes of more then 400 kV/cm. The THz source uses ultrashort optical laser pulses provided by a Ti:sapphire oscillator. In addition, a two-color THz-pump mid-infrared-probe setup is implemented, which allows for two-dimensional time-resolved experiments in the far-infrared wavelength range. Field ionization of neutral shallow donors in gallium arsenide with intense, ultrashort THz pulses and subsequent coherent radiative recombination of electrons to impurity ground states is observed at room temperature. The superradiant decay of the nonlinear polarization results in the emission of a coherent signal with picosecond lifetimes. Such nonlinear signals, which exhibit a lifetime ten times longer than in the linear regime are observed for the first time. At low temperatures and THz field strengths below 5 kV/cm, Rabi flopping on shallow donor transitions is demonstrated. For the first time, the polar electron-LO phonon interaction is directly measured in the quantum kinetic transport regime. Quasi-instantaneous acceleration of conduction band electrons in the polar gallium arsenide lattice by the electric field of intense THz pulses and subsequent probing of the mid-infrared transmission reveals a modulation of the transmission along the THz-mid-infrared delay coordinate with the frequency of the LO phonon. These modulations directly display the relative phase between the electron motion and its surrounding virtual phonon cloud. Quantum kinetic model calculations fully account for the observed phenomena. (orig.)

  12. Infrared and millimeter waves v.14 millimeter components and techniques, pt.V

    CERN Document Server

    Button, Kenneth J


    Infrared and Millimeter Waves, Volume 14: Millimeter Components and Techniques, Part V is concerned with millimeter-wave guided propagation and integrated circuits. In addition to millimeter-wave planar integrated circuits and subsystems, this book covers transducer configurations and integrated-circuit techniques, antenna arrays, optoelectronic devices, and tunable gyrotrons. Millimeter-wave gallium arsenide (GaAs) IMPATT diodes are also discussed. This monograph is comprised of six chapters and begins with a description of millimeter-wave integrated-circuit transducers, focusing on vario

  13. Multichannel, time-resolved picosecond laser ultrasound imaging and spectroscopy with custom complementary metal-oxide-semiconductor detector. (United States)

    Smith, Richard J; Light, Roger A; Sharples, Steve D; Johnston, Nicholas S; Pitter, Mark C; Somekh, Mike G


    This paper presents a multichannel, time-resolved picosecond laser ultrasound system that uses a custom complementary metal-oxide-semiconductor linear array detector. This novel sensor allows parallel phase-sensitive detection of very low contrast modulated signals with performance in each channel comparable to that of a discrete photodiode and a lock-in amplifier. Application of the instrument is demonstrated by parallelizing spatial measurements to produce two-dimensional thickness maps on a layered sample, and spectroscopic parallelization is demonstrated by presenting the measured Brillouin oscillations from a gallium arsenide wafer. This paper demonstrates the significant advantages of our approach to pump probe systems, especially picosecond ultrasonics.

  14. Novel deep—submicron x—ray lithography process for T—shaped gate patterns

    Institute of Scientific and Technical Information of China (English)

    XieChangqing; YiFuting; 等


    The growing interest in the use of Gallium Arsenids semiconductor materials has presented many opportunities for device operational speed improvements but has also presented many problems for the device maker,A novel deep-submicron x-ray lithography process for T-shaped gate patterns useful for high-electron-mobility transistors(HEMT) is introduced in this work.In the fabrication of T-shaped gate a therr layer resists method is used.The x-ray exposure experiments were finished by Beijing Synchrotron Radiation Facility(BSRF) 3B1A beamline,and good result has been obtained.

  15. Superconductivity by transition metal doping in Ca10(Fe1-xMxAs)10(Pt3As8) (M = Co, Ni, Cu) (United States)

    Stürzer, Tobias; Kessler, Fabian; Johrendt, Dirk


    We report the successful substitution of cobalt, nickel and copper for iron in the 1038-phase parent compound ? yielding ?, ? and ?), respectively. Superconductivity is induced in Co and Ni doped compounds reaching critical temperatures up to 15 K, similar to known Pt substituted ?), whereas no superconductivity was detected in ?. The obtained ? phase diagrams are very similar to those of other iron arsenide superconductors indicating rather universal behaviour despite the more complex structures of the 1038-type compounds, where the physics is primarily determined by the FeAs layer.

  16. Arsenic-bridged magnetic interactions in an emerging two-dimensional FeAs nanostructure on MnAs (United States)

    Helman, Christian; Ferrari, Valeria; Llois, Ana Maria


    The extreme case of an Fe monolayer deposited onto a manganese arsenide (MnAs) substrate is analyzed using density functional theory. We find that an FeAs quasi-two-dimensional antiferromagnetic surface nanostructure emerges. This nanostructure, which is magnetically nearly decoupled from the substrate, is due to bonding effects arising from the arsenic atoms bridging the Fe magnetic interactions. These interactions are studied and modeled using a Heisenberg-type Hamiltonian. They display an angular dependence which is characteristic of superexchange-like interactions, which are of the same order of magnitude as those appearing in Fe-based pnictides.

  17. Acoustical Scanning of Optical Images (United States)


    1976. 6. S. S. Li "Theoretical Analysis of a Novel MPN Gallium Arsenide Schottky Barrier Solar Cell ," Solid State Electronics, 21, 435-438, 1978. 7. R...circuits presented here. inverse frequency dependence Principle of Operat 4on NW 110 RC • = (5) The electrical admittance of the C ( interdigital ...500 V0 (mV) - INTERDIGITAL TRANSDUCER VD (MV)SCHOTTKY DIOE ARRAY Fig. 8. Forward 1-V curves with implant dose as zno parameter. Curve for no implant is

  18. Enhanced optical properties in inclined GaAs nanowire arrays for high-efficiency solar cells (United States)

    Wang, Yile; Zhang, Xu; Sun, Xiaohong; Qi, Yongle; Wang, Zhen; Wang, Hua


    The inclined Gallium Arsenide (GaAs) nanowire arrays (NWAs) as light absorbing structures for solar photovoltaics are proposed. The influence of geometric parameters on the optical absorption properties is systematically investigated, and the optimal geometric parameters of the proposed structure are determined by using rigorous coupled wave analysis (RCWA) and the finite element method. It is found that the absorption efficiency of the optimized structure can be improved significantly compared with vertical NWAs and thin film layer structure. The optimized structure yields a photocurrent of 30.3 mA/cm2, which is much higher than that of vertical NWAs and thin film layer with the same geometric configurations.

  19. Growth and Doping of Al(x)Ga(1-x)N Films by Electron Cyclotron Resonance Assisted Molecular Beam Epitaxy (United States)


    In the case of a well- defined activation energy AEd, the FIG. 4. Temperature dependence of i,, n, and n. carrier concentration in the conduction band...this figure, the ". L Pankove, ModS Symp. Proc. 162, 515 (1990). vertical axis is a parameter S which is defined as the change 2P. .o and D. I. Ferry...Junctions and ence between the metal and GaN. The work function of ise aracas (Plenum New Y ork , e984). ""ha G. X Marcas , Gallium Arsenide Technology

  20. Raman spectroscopy and electrical properties of InAs nanowires with local oxidation enabled by substrate micro-trenches and laser irradiation

    CERN Document Server

    Tanta, R; Liao, Z; Krogstrup, P; Vosch, T; Nygard, J; Jespersen, T S


    The thermal gradient along indium-arsenide nanowires was engineered by a combination of fabricated micro- trenches in the supporting substrate and focused laser irradiation. This allowed local control of thermally activated oxidation reactions of the nanowire on the scale of the diffraction limit. The locality of the oxidation was detected by micro-Raman mapping, and the results were found consistent with numerical simulations of the temperature profile. Applying the technique to nanowires in electrical devices the locally oxidized nanowires remained conducting with a lower conductance as expected for an effectively thinner conducting core.

  1. Low-Concentration-Ratio Solar-Cell Arrays (United States)

    Biss, M. S.; Reed, David A., Jr.


    Paper presents design concept for mass-producible arrays of solar electric batteries and concentrators tailored to individual requirements. Arrays intended primarily for space stations needing about 100 kW of power. However, modular, lightweight, compact, and relatively low-cost design also fulfill requirements of some terrestrial applications. Arrays built with currently available materials. Pultrusions, injectionmolded parts, and composite materials used extensively to keep weight low. For added flexibility in design and construction, silicon and gallium arsenide solar-cell panels interchangeable.

  2. GaAs/Ge solar cell AC parameters at different temperatures

    Energy Technology Data Exchange (ETDEWEB)

    Kumar, R. Anil; Suresh, M.S. [ISRO Satellite centre, ISRO, Bangalore 560 017 (India); Nagaraju, J. [Department of Instrumentation, Indian Institute of Science, Bangalore 560 012 (India)


    The AC parameters of Gallium Arsenide (GaAs/Ge) solar cell were measured at different cell temperatures (198-348K) by varying the cell bias voltage (forward and reverse) under dark condition using impedance spectroscopy technique. It was found that the cell capacitance increases with the cell temperature where as the cell resistance decreases, at any bias voltage. The measured cell parameters were used to calculate the intrinsic concentration of electron-hole pair, cell material relative permittivity and its band gap energy. The diode factor and the cell dynamic resistance at the corresponding maximum power point decrease with the cell temperature.

  3. Ab-initio study of the electronic structure of sup 1 sup 9 F implanted in GaAs and GaN crystals

    CERN Document Server

    Park, J H; Cho, H S; Shin, Y N


    We have studied the nuclear quadrupole interaction of a fluorine atom implanted in gallium arsenide and gallium nitride cluster models using the ab-initio Hartree-Fock theory. For the three possible fluorine sites in GaAs and GaN, we have determined the location of the implanted fluorine atom by using a self-consistent calculation, the electric field gradient at the implanted atom, and the electronic structure. Good agreement is found with experimental data wherever they are available. Predictions are made for the implanted fluorine site associated with the total energy and the electric field gradient which are expected to be measurable by a variety of experimental techniques.

  4. Ultrafast properties of femtosecond-laser-ablated GaAs and its application to terahertz optoelectronics. (United States)

    Madéo, Julien; Margiolakis, Athanasios; Zhao, Zhen-Yu; Hale, Peter J; Man, Michael K L; Zhao, Quan-Zhong; Peng, Wei; Shi, Wang-Zhou; Dani, Keshav M


    We report on the first terahertz (THz) emitter based on femtosecond-laser-ablated gallium arsenide (GaAs), demonstrating a 65% enhancement in THz emission at high optical power compared to the nonablated device. Counter-intuitively, the ablated device shows significantly lower photocurrent and carrier mobility. We understand this behavior in terms of n-doping, shorter carrier lifetime, and enhanced photoabsorption arising from the ablation process. Our results show that laser ablation allows for efficient and cost-effective optoelectronic THz devices via the manipulation of fundamental properties of materials.

  5. Molecular beam epitaxy

    CERN Document Server

    Pamplin, Brian R


    Molecular Beam Epitaxy introduces the reader to the use of molecular beam epitaxy (MBE) in the generation of III-V and IV-VI compounds and alloys and describes the semiconductor and integrated optics reasons for using the technique. Topics covered include semiconductor superlattices by MBE; design considerations for MBE systems; periodic doping structure in gallium arsenide (GaAs); nonstoichiometry and carrier concentration control in MBE of compound semiconductors; and MBE techniques for IV-VI optoelectronic devices. The use of MBE to fabricate integrated optical devices and to study semicond

  6. Multiple Applications of GaAs semiconductors (United States)

    Martel, Jenrené; Wonka, Willy


    The object of this discussion will be to explore the many facets of Gallium Arsenide(GaAs) semiconductors. The session will begin with a brief overview of the basic properties of semiconductors in general(band gap, doping, charge mobility etc.). It will then follow with a closer look at the properties of GaAs and how these properties could potentially translate into some very exciting applications. Furthermore, current applications of GaAs semiconductors will be dicussed and analyzed. Finally, physical limits and advantages/disadvantages of GaAs will be considered.

  7. Epitaxial growth of single crystal films (United States)

    Lind, M. D.; Kroes, R. L.; Immorlica, A. A., Jr.


    An experiment in gallium arsenide liquid phase epitaxy (LPE) on a flight of the SPAR 6 is described. A general purpose LPE processor suitable for either SPAR or Space Transportation System flights was designed and built. The process was started before the launch, and only the final step, in which the epitaxial film is grown, was performed during the flight. The experiment achieved its objectives; epitaxial films of reasonably good quality and very nearly the thickness predicted for convection free diffusion limited growth were produced. The films were examined by conventional analytical techniques and compared with films grown in normal gravity.

  8. Design considerations and performance characteristics of high concentration point-focussing photovoltaic modules

    Energy Technology Data Exchange (ETDEWEB)

    Sanders, J.A.; Broadbent, S.


    Through the auspices of the Department of Energy, the Fresnel lens point-focussing photovoltaic module has evolved into a commercially available, high efficiency low cost option for converting solar energy into electricity. The 15.4% efficient baseline module is undergoing several design improvements to achieve higher efficiencies at high concentrations and lower cost. A 16.5% module will be available in 1984 and 18% Gallium Arsenide modules in 1985. This paper describes the design details and performance characteristics of the baseline module and the design improvements.

  9. New exploration methods for platinum and rhodium deposits poor in base-metal sulphides

    DEFF Research Database (Denmark)

    Ohnenstetter, M.; Johan, Z.; Cocherie, A.


    Platinum-group elements (PGE) are typically associated with mafic and ultramafic intrusive rocks and the main exploration targets are layers and zones rich in PGE-bearing sulphides. Some PGE occurences, however, are in sulphide-poor situations and this raises the possibility that PGE deposits may...... and weathering has littel effect on the distribution of the PGE.The study showed that alloys and arsenides are the main carriers for platinum in all the deposits. Pt-Fe alloys, in particular, are often present in PGE deposits poor in base-metal sulphides and two phase systems were investigated experimentally: Pt...

  10. Functional and electrophysiological evaluation of the effect of laser therapy in the treatment of peripheral facial paralysis (United States)

    Ladalardo, Thereza C.; Brugnera, Aldo, Jr.; Takamoto, Marcia; Pinheiro, Antonio L. B.; Campos, Roberto A. d. C.; Castanho Garrini, Ana E.; Bologna, Elisangela D.; Settanni, Flavio


    This clinical case report relates to a total of 4 patients, carriers of idiopathic facial paralysis, treated with Low Level Laser Therapy using a Gallium-Aluminum-Arsenide diode laser of 780 nm, 50 mW, continuous wave emission, spot size 3 mm2 and total dosage of 20 joules per session distributed to the peripheral trajectory of the injured nerve in a point by point contact mode. Altogether 24 treatment sessions were performed in a period of 12 consecutive weeks twice a week All treated patients presented recovery signs from the initial degree of paralysis.

  11. Basic Research Plan (United States)


    Dpuy ndr ecetryo Defense ~ ~ (Si c an TehooyP sadPorm) a h otoln fiedsg natedI in Do Ditibto Stte en C, heeyas3uhrzsisrees iitiso Defense~ ~ ~ ~ ofalNT n...arsenide GaN gallium nitride GaSb gallium antimonide Ge germanium GEO geosynchronous earth orbit GHz gigahertz GICR Government/Industry Cooperative... silicon Si3N4 silicon nitride SiC silicon carbide SNR signal-to-noise ratio SPG Scientific Planning Group SRO Strategic Research Objectives STM scanning

  12. Photovoltaics and solar thermal conversion to electricity - Status and prospects (United States)

    Alper, M. E.


    Photovoltaic power system technology development includes flat-plate silicon solar arrays and concentrating solar cell systems, which use silicon and other cell materials such as gallium arsenide. System designs and applications include small remote power systems ranging in size from tens of watts to tens of kilowatts, intermediate load-center applications ranging in size from tens to hundreds of kilowatts, and large central plant installations, as well as grid-connected rooftop applications. The thermal conversion program is concerned with large central power systems and small power applications.

  13. Inherent polarization entanglement generated from a monolithic semiconductor chip

    DEFF Research Database (Denmark)

    Horn, Rolf T.; Kolenderski, Piotr; Kang, Dongpeng


    Creating miniature chip scale implementations of optical quantum information protocols is a dream for many in the quantum optics community. This is largely because of the promise of stability and scalability. Here we present a monolithically integratable chip architecture upon which is built...... a photonic device primitive called a Bragg reflection waveguide (BRW). Implemented in gallium arsenide, we show that, via the process of spontaneous parametric down conversion, the BRW is capable of directly producing polarization entangled photons without additional path difference compensation, spectral...... as a serious contender on which to build large scale implementations of optical quantum processing devices....

  14. Orbital Symmetry of Ba(Fe1-xCox)2As2 Superconductors Probed with X-ray Absorption Spectroscopy


    Cheney, C. Parks; Bondino, F.; Callcott, T. A.; Vilmercati, P.; Ederer, D.; Magnano, E.; Malvestuto, M.; Parmigiani, F.; Sefat, A. S.; McGuire, M. A.; Jin, R; Sales, B. C.; Mandrus, D; Singh, D.J.; Freeland, J. W.


    The orbital symmetries of electron doped iron-arsenide superconductors Ba(Fe1-xCox)2As2 have been measured with x-ray absorption spectroscopy. The data reveal signatures of Fe d electron itinerancy, weak electronic correlations, and a high degree of Fe-As hybridization related to the bonding topology of the Fe dxz+yz states, which are found to contribute substantially at the Fermi level. The energies and detailed orbital character of Fe and As derived unoccupied s and d states are found to be...

  15. Comparative High Field Magneto-transport Of Rare Earth Oxypnictides With Maximum Transition Temperatures

    Energy Technology Data Exchange (ETDEWEB)

    Balakirev, Fedor F [Los Alamos National Laboratory; Migliori, A [MPA-NHMFL; Riggs, S [NHMFL-FSU; Hunte, F [NHMFL-FSU; Gurevich, A [NHMFL-FSU; Larbalestier, D [NHMFL-FSU; Boebinger, G [NHMFL-FSU; Jaroszynski, J [NHMFL-FSU; Ren, Z [CHINA; Lu, W [CHINA; Yang, J [CHINA; Shen, X [CHINA; Dong, X [CHINA; Zhao, Z [CHINA; Jin, R [ORNL; Sefat, A [ORNL; Mcguire, M [ORNL; Sales, B [ORNL; Christen, D [ORNL; Mandrus, D [ORNL


    We compare magnetotransport of the three iron-arsenide-based compounds ReFeAsO (Re=La, Sm, Nd) in very high DC and pulsed magnetic fields up to 45 and 54 T, respectively. Each sample studied exhibits a superconducting transition temperature near the maximum reported to date for that particular compound. While high magnetic fields do not suppress the superconducting state appreciably, the resistivity, Hall coefficient, and critical magnetic fields, taken together, suggest that the phenomenology and superconducting parameters of the oxypnictide superconductors bridges the gap between MgB{sub 2} and YBCO.

  16. Optical Refrigeration (United States)


    glasses and crystals doped with Yb3+ (ZBLANP (refs 16–19), ZBLAN (refs 20,21), CNBZn (refs 22,23), BIG (refs 23,24), KGd(WO4)2 (ref. 22), KY(WO4)2...cooling in the Yb3+-doped fluorozirconate glass ZBLAN . Phys. Rev. B 75, 144302 (2007). 35. Seletskiy, D., Hasselbeck, M. P., Sheik-Bahae, M. & Epstein, R...confined to either glasses and crystals doped with rare-earth (RE) elements or direct-bandgap semiconductors such as gallium arsenide. Although laser

  17. Integration, gap formation, and sharpening of III-V heterostructure nanowires by selective etching

    DEFF Research Database (Denmark)

    Kallesoe, C.; Mølhave, Kristian; Larsen, K. F.;


    Epitaxial growth of heterostructure nanowires allows for the definition of narrow sections with specific semiconductor composition. The authors demonstrate how postgrowth engineering of III-V heterostructure nanowires using selective etching can form gaps, sharpening of tips, and thin sections...... lithography is used for deposition of catalyst particles on trench sidewalls and the lateral growth of III-V nanowires is achieved from such catalysts. The selectivity of a bromine-based etch on gallium arsenide segments in gallium phosphide nanowires is examined, using a hydrochloride etch to remove the III...

  18. Terahertz Technology for Defense and Security-Related Applications

    DEFF Research Database (Denmark)

    Iwaszczuk, Krzysztof

    This thesis deals with chosen aspects of terahertz (THz) technology that have potential in defense and security-related applications. A novel method for simultaneous data acquisition in time-resolved THz spectroscopy experiments is developed. This technique is demonstrated by extracting the sheet...... conductivity of photoexcited charge carriers in semi-insulating gallium arsenide. Comparison with results obtained using a standard data acquisition scheme shows that the new method minimizes errors originating from uctuations in the laser system output and timing errors in the THz pulse detection. Furthermore...

  19. Method for the preparation of inorganic single crystal and polycrystalline electronic materials (United States)

    Groves, W. O. (Inventor)


    Large area, semiconductor crystals selected from group 3-5 compounds and alloys are provided for semiconductor device fabrication by the use of a selective etching operation which completely removes the substrate on which the desired crystal was deposited. The substrate, selected from the same group as the single crystal, has a higher solution rate than the epitaxial single crystal which is essentially unaffected by the etching solution. The preparation of gallium phosphide single crystals using a gallium arsenide substrate and a concentrated nitric acid etching solution is described.

  20. The origin of the Avram Iancu U-Ni-Co-Bi-As mineralization, Băiţa (Bihor) metallogenic district, Bihor Mts., Romania (United States)

    Zajzon, Norbert; Szentpéteri, Krisztián; Szakáll, Sándor; Kristály, Ferenc


    The Băiţa metallogenic district in the Bihor Mountains is a historically important mining area in Romania. Uranium mining took place between 1952 and 1998 from various deposits, but very little is known about the geology and mineralogy of these deposits. In this paper, we describe geology and mineralogy of uranium mineralization of the Avram Iancu uranium mine from waste dump samples collected before complete remediation of the site. Texturally and mineralogically complex assemblages of nickeline, cobaltite-gersdorffite solid solution, native Bi, Bi-sulfosalts, molybdenite, and pyrite-chalcopyrite-sphalerite occur with uraninite, "pitchblende," and brannerite in most of the ore samples. The association of nickel, cobalt, and arsenic with uranium is reminiscent of five-element association of vein type U-Ni-Co-Bi-As deposits; however, the Avram Iancu ores appear to be more replacement-type stratiform/stratabound. Avram Iancu ore samples contain multistage complex, skarn, uranium sulfide, arsenide assemblages that can be interpreted to have been formed in the retrograde cooling stages of the skarn hydrothermal system. This mineralizing system may have built-up along Upper Cretaceous-Paleogene "Banatite" intrusions of diorite-to-granite composition. The intrusions crosscut the underlying uraniferous Permian formations in the stacked NW-verging Biharia Nappe System. The mineralization forms stacked, multilayer replacement horizons, along carbonate-rich lithologies within the metavolcanic (tuffaceous) Muncel Series. Mineral paragenesis and some mineral chemistry suggest moderate-to-high uranium sulfide stage along stratigraphically controlled replacement zones and minor veins. Uranium minerals formed abundantly in this early stage and include botryoidal, sooty and euhedral uraninite, brannerite, and coffinite. Later and/or lower-temperature mineral assemblages include heterogeneous, complexly zoned arsenide-sulfarsenide solid solutions associated with minute but

  1. Cameras Reveal Elements in the Short Wave Infrared (United States)


    Goodrich ISR Systems Inc. (formerly Sensors Unlimited Inc.), based out of Princeton, New Jersey, received Small Business Innovation Research (SBIR) contracts from the Jet Propulsion Laboratory, Marshall Space Flight Center, Kennedy Space Center, Goddard Space Flight Center, Ames Research Center, Stennis Space Center, and Langley Research Center to assist in advancing and refining indium gallium arsenide imaging technology. Used on the Lunar Crater Observation and Sensing Satellite (LCROSS) mission in 2009 for imaging the short wave infrared wavelengths, the technology has dozens of applications in military, security and surveillance, machine vision, medical, spectroscopy, semiconductor inspection, instrumentation, thermography, and telecommunications.

  2. Spin-dependent electron-phonon interaction in SmFeAsO by low-temperature Raman spectroscopy. (United States)

    Zhang, L; Guan, P F; Feng, D L; Chen, X H; Xie, S S; Chen, M W


    The interplay between spin dynamics and lattice vibration has been suggested as an important part of the puzzle of high-temperature superconductivity. Here, we report the strong interaction between spin fluctuation and phonon in SmFeAsO, a parent compound of the iron arsenide family of superconductors, revealed by low-temperature Raman spectroscopy. Anomalous zone-boundary-phonon Raman scattering from spin superstructure was observed at temperatures below the antiferromagnetic ordering point, which offers compelling evidence on spin-dependent electron-phonon coupling in pnictides.

  3. Research of MBE Growth and Properties of Semiconductors Hetero-Interfaces with Unusual Band Lineups (United States)


    OF 1 JAN 73,IS OQBQLET.E. .. -9 ,. 񔰣 Research on .p MBE Growth and Properties of Semiconductor Hetero-Interfaces with Unusual Band Lineups...On the other hand, being a phosphide rather than an arsenide, it was widely 3 regarded as a material ill suited for MBE growth . However, we had...extensive experience with the MBE growth of GaP (far more than anybody else) and had found GaP a material far easier to grow than its reputation suggested

  4. Absence of phase-dependent noise in time-domain reflectivity studies of impulsively excited phonons

    KAUST Repository

    Hussain, A.


    There have been several reports of phase-dependent noise in time-domain reflectivity studies of optical phonons excited by femtosecond laser pulses in semiconductors, semimetals, and superconductors. It was suggested that such behavior is associated with the creation of squeezed phonon states although there is no theoretical model that directly supports such a proposal. We have experimentally re-examined the studies of phonons in bismuth and gallium arsenide, and find no evidence of any phase-dependent noise signature associated with the phonons. We place an upper limit on any such noise at least 40–50 dB lower than previously reported.

  5. Quantum mechanical effects analysis of nanostructured solar cell models

    Directory of Open Access Journals (Sweden)

    Badea Andrei


    Full Text Available The quantum mechanical effects resulted from the inclusion of nanostructures, represented by quantum wells and quantum dots, in the i-layer of an intermediate band solar cell will be analyzed. We will discuss the role of these specific nanostructures in the increasing of the solar cells efficiency. InAs quantum wells being placed in the i-layer of a gallium arsenide (GaAs p-i-n cell, we will analyze the quantum confined regions and determine the properties of the eigenstates located therein. Also, we simulate the electroluminescence that occurs due to the nanostructured regions.

  6. Optical Absorption of Impurities and Defects in Semiconducting Crystals Electronic Absorption of Deep Centres and Vibrational Spectra

    CERN Document Server

    Pajot, Bernard


    This book outlines, with the help of several specific examples, the important role played by absorption spectroscopy in the investigation of deep-level centers introduced in semiconductors and insulators like diamond, silicon, germanium and gallium arsenide by high-energy irradiation, residual impurities, and defects produced during crystal growth. It also describes the crucial role played by vibrational spectroscopy to determine the atomic structure and symmetry of complexes associated with light impurities like hydrogen, carbon, nitrogen and oxygen, and as a tool for quantitative analysis of these elements in the materials.

  7. Single and multiband THz Metamaterial Polarizers

    CERN Document Server

    Sangala, Bagvanth Reddy; Deshmukh, Prathmesh; Surdi, Harshad; Rana, Goutam; Gopal, Achanta Venu; Prabhu, S S


    We report single and multiband linear polarizers for terahertz (THz) frequencies using cut-wire metamaterials (MM). The MMs are designed by finite element method, fabricated by electron beam lithography, and characterized by THz time-domain spectroscopy. The MM unit cells consist of single or multiple length cut-wire pads of gold on semi-insulating Gallium Arsenide for single or multiple band polarizers. The dependence of the resonance frequency of the single band polarizer on the length of the cut-wires is explained based a transmission line model.

  8. Surface Patterning and Nanowire Biosensor Construction

    DEFF Research Database (Denmark)

    Iversen, Lars


    submicron feature sizes, varying linearly in size with laser power and irradiation time. In Part II - “Nanoscale Biosensors” - Indium Arsenide (InAs) nanowires (NW) incorporated in field effect transistor (FET) devices provide a sensitive platform for detection of charged analyte species binding to the NW...... surface. A central limitation to this biosensor principle is the screening of analyte charge by mobile ions in electrolytes with physiological ionic strength. To overcome this problem, we propose to use as capture agents proteins which undergo large conformational changes. Using structure based protein...

  9. Mechanically flexible nanoscale silicon integrated circuits powered by photovoltaic energy harvesters (United States)

    Shahrjerdi, D.; Bedell, S. W.; Khakifirooz, A.; Cheng, K.


    In this work, we demonstrate mechanically flexible extremely thin silicon on insulator (ETSOI) ring oscillators with a stage delay of ∼16 ps at a power supply voltage of 0.9 V. Extensive electrical analyses of the flexible ETSOI devices reveal the unchanged properties of the devices during the layer transfer process. Furthermore, we discuss the use of flexible silicon and gallium arsenide photovoltaic energy harvesters for powering flexible ETSOI ring oscillators under different illumination conditions. Our results illustrate innovative pathways for the implementation of optically powered flexible ETSOI technology in future flexible hybrid electronics.

  10. X-ray detection with GaAs RGCCDs

    Energy Technology Data Exchange (ETDEWEB)

    Passmore, S. E-mail:; Ludwig, J.; Rogalla, M.; Runge, K.; Bryman, D.; Cresswell, J


    Gallium-Arsenide Resistive-Gate CCDs with an active depth of up to 30 {mu}m were used to detect X-rays with energies between 14 and 60 keV. Five different X-ray sources were used to investigate the signal-to-noise ratio, energy resolution and linearity of the device. An energy resolution better than 11% at 60 keV was observed. The charge transport efficiency (CTE) of these 128 pixel CCDs was determined using two independent methods to be CTE>0.9992. (author)

  11. Considerations for millimeter wave printed antennas (United States)

    Pozar, D. M.


    Calculated data are presented on the performance of printed antenna elements on substrates which may be electrically thick, as would be the case for printed antennas at millimeter wave frequencies. Printed dipoles and microstrip patch antennas on polytetrafluoroethylene (PTFE), quartz, and gallium arsenide substrates are considered. Data are given for resonant length, resonant resistance, bandwidth, loss due to surface waves, loss due to dielectric heating, and mutual coupling. Also presented is an optimization procedure for maximizing or minimizing power launched into surface waves from a multielement printed antenna array. The data are calculated by a moment method solution.

  12. Modeling Electromagnetic Effects in MMICs for T/R Modules (United States)


    and Midford, T. A., "MMIC Technology: Better Performance at Affordable Cost," Microwave Journal, pp. 135-142, April 1988. Heaney, Eugene , O’Connell...34 Proceedings of the IEE, Vol. 115, No. 7, pp. 909-915, July 1968. Brazil, T., El-Rabaie, S., Choo , E., Fusco, V., and Stewart, C., "Large-Signal FET...pp. 910- 917, July 1968. 63 Orvis, William J, Rubalcava, Anthony L., Chase, Eugene W., Taylor, Robert G., and Morrow, Richard H., "Gallium Arsenide

  13. The role of cobalt in the ecosystem – likelihood of adverse effects

    Directory of Open Access Journals (Sweden)

    Henryka Langauer-Lewowicka


    Full Text Available Cobalt occurs in nature primarily as arsenides, oxides and sulphides. It is an essential element necessary for the formation of vitamin B12. It is also indispensable for regular growth of animals, plankton, and plants life. For the general population the diet is the main source of exposure to cobalt. The toxic effect due to environmental exposure has not been detected so far with the exception of cardiomyopathy in beer drinkers. Contaminated soils in the vicinity of industrial emittors pose a particular threat to children

  14. Microanalysis of Solar Cells (United States)

    Kazmerski, Lawrence L.


    Applications of complementary surface analysis techniques (AES, SIMS, XPS) to solar cell device problems are discussed. Several examples of device interface and grain boundary problems are presented. Silicon, gallium arsenide and indium phosphide based devices are reviewed. Results of compositional and chemical analysis are correlated directly with EBIC measurements performed in-situ on identical sample areas. Those are, in turn, correlated with resulting photovoltaic device performance. The importance of microanalysis to the solution of critical device problems in the photovoltaics technology is emphasized.

  15. Local quantum criticality of an iron-pnictide tetrahedron. (United States)

    Ong, T Tzen; Coleman, Piers


    Motivated by the close correlation between transition temperature (T(c)) and the tetrahedral bond angle of the As-Fe-As layer observed in the iron-based superconductors, we study the interplay between spin and orbital physics of an isolated iron-arsenide tetrahedron embedded in a metallic environment. Whereas the spin-Kondo effect is suppressed to low temperatures by Hund's coupling, the orbital degrees of freedom are expected to quantum mechanically quench at high temperatures, giving rise to an overscreened, non-Fermi liquid ground state. Translated into a dense environment, this critical state may play an important role in the superconductivity of these materials.

  16. Raman spectroscopy and electrical properties of InAs nanowires with local oxidation enabled by substrate micro-trenches and laser irradiation

    Energy Technology Data Exchange (ETDEWEB)

    Tanta, R.; Krogstrup, P.; Nygård, J.; Jespersen, T. S., E-mail: [Center for Quantum Devices and Nano Science Center, Niels Bohr Institute, University of Copenhagen, Copenhagen 2100 (Denmark); Madsen, M. H. [Danish Fundamental Metrology, Matematiktorvet 307, Kgs. Lyngby 2800 (Denmark); Liao, Z.; Vosch, T. [Nano-Science Center, Department of Chemistry, University of Copenhagen, Copenhagen 2100 (Denmark)


    The thermal gradients along indium arsenide nanowires were engineered by a combination of fabricated micro-trenches in the supporting substrate and focused laser irradiation. This allowed local spatial control of thermally activated oxidation reactions of the nanowire on the scale of the diffraction limit. The locality of the oxidation was detected by micro-Raman mapping, and the results were found to be consistent with numerical simulations of the temperature profile. Applying the technique to nanowires in electrical devices the locally oxidized nanowires remained conducting with a lower conductance as expected for an effectively thinner conducting core.

  17. Semiconductor Laser Diode Arrays by MOCVD (Metalorganic Chemical Vapor Deposition) (United States)


    Roberts. N. J1. Mason. and M. Robinson, J. Cryst. Growth 68, 422 (1984). ’M. R. Leys. C. van Opdorp. M. P. A. .’iegers, and H. J. Talen -van der Mheen...geometry effects is and superlattices has been dominated obtained by including one measured by the MOCVD growth technology . data point in the analysis...Dapkus, Gallium : Arsenide Technology , D.K. Ferry, Ed., tices i Howard W. Sams and Co., Indianapolis, hetero- 1985, p. 79. s is nec- G . 4. G. Costrini and

  18. Use of a semiconductor diode laser in urology (United States)

    Watson, Graham M.; Anson, K.


    The gallium arsenide semiconductor laser at 805 nm has been used with a variety of delivery fibers to produce actions varying from incision to interstitial coagulation. Clinical experience at this early stage suggests that the laser can be used to cut skin and connective tissue efficiently in air. It may prove at least as effective as the neodymium YAG laser for interstitial coagulation of tumors or prostate. Further efforts are required to promote its action cutting underwater and as a coagulator both in air and water.

  19. Raman spectroscopy and electrical properties of InAs nanowires with local oxidation enabled by substrate micro-trenches and laser irradiation (United States)

    Tanta, R.; Madsen, M. H.; Liao, Z.; Krogstrup, P.; Vosch, T.; Nygârd, J.; Jespersen, T. S.


    The thermal gradients along indium arsenide nanowires were engineered by a combination of fabricated micro-trenches in the supporting substrate and focused laser irradiation. This allowed local spatial control of thermally activated oxidation reactions of the nanowire on the scale of the diffraction limit. The locality of the oxidation was detected by micro-Raman mapping, and the results were found to be consistent with numerical simulations of the temperature profile. Applying the technique to nanowires in electrical devices the locally oxidized nanowires remained conducting with a lower conductance as expected for an effectively thinner conducting core.

  20. The LDA+U calculation of electronic band structure of GaAs (United States)

    Bahuguna, B. P.; Sharma, R. O.; Saini, L. K.


    We present the electronic band structure of bulk gallium arsenide (GaAs) using first principle approach. A series of calculations has been performed by applying norm-conserving pseudopotentials and ultrasoft non-norm-conserving pseudopotentials within the density functional theory. These calculations yield too small band gap as compare to experiment. Thus, we use semiemperical approach called local density approximation plus the multi-orbital mean-field Hubbard model (LDA+U), which is quite effective in order to describe the band gap of GaAs.

  1. Study of the background noise in microwave GaAsFET devices

    Energy Technology Data Exchange (ETDEWEB)

    Serrano S, A. (Centro de Investigacion Cientifica y de Educacion Superior de Ensenada, B.C. (Mexico))


    One of the most important properties of the gallium arsenide field effect transistor is its low noise figure in the microwave frequency range (approx. 1 dB, 4 GHz). The applications of this device in components and systems in the high frequency range require analysis of background noise in terms of basic static and dynamic properties of the device. The purpose of this paper is to review GaAsFET noise properties; from this review, a description of precise noise measurement techniques is made. Some experimental and theoretical results on the minimum noise figure are shown for several GaAsFET devices.

  2. An interim report on the NTS-2 solar cell experiment (United States)

    Statler, R. L.; Walker, D. H.


    Data obtained from the fourteen solar cell modules on the NTS-2 satellite are presented together with a record of panel temperature and sun inclination. The following flight data are discussed: (1) state of the art solar cell configurations which embody improvements in solar cell efficiency through new silicon surface and bulk technology, (2) improved coverslip materials and coverslip bonding techniques, (3) short and long term effects of ultraviolet rejection filters vs. no filters on the cells, (4) degradation on a developmental type of liquid epitaxy gallium-aluminum-arsenide solar cell, and (5) space radiation effects.

  3. The 3-5 semiconductor solid solution single crystal growth. [low gravity float zone growth experiments using gallium indium antimonides and cadmium tellurides (United States)

    Gertner, E. R.


    Techniques used for liquid and vapor phase epitaxy of gallium indium arsenide are described and the difficulties encountered are examined. Results show that the growth of bulk III-V solid solution single crystals in a low gravity environment will not have a major technological impact. The float zone technique in a low gravity environment is demonstrated using cadmium telluride. It is shown that this approach can result in the synthesis of a class of semiconductors that can not be grown in normal gravity because of growth problems rooted in the nature of their phase diagrams.

  4. Design of Ceramic Springs for Use in Semiconductor Crystal Growth in Microgravity (United States)

    Kaforey, M. F.; Deeb, C. W.; Matthiesen, D. H.


    Segregation studies can be done in microgravity to reduce buoyancy driven convection and investigate diffusion-controlled growth during the growth of semiconductor crystals. During these experiments, it is necessary to prevent free surface formation in order to avoid surface tension driven convection (Marangoni convection). Semiconductor materials such as gallium arsenide and germanium shrink upon melting, so a spring is necessary to reduce the volume of the growth chamber and prevent the formation of a free surface when the sample melts. A spring used in this application must be able to withstand both the high temperature and the processing atmosphere. During the growth of gallium arsenide crystals during the GTE Labs/USAF/NASA GaAs GAS Program and during the CWRU GaAs programs aboard the First and Second United States microgravity Laboratories, springs made of pyrolytic boron nitride (PBN) leaves were used. The mechanical properties of these PBN springs have been investigated and springs having spring constants ranging from 0.25 N/mm to 25 N/mm were measured. With this improved understanding comes the ability to design springs for more general applications, and guidelines are given for optimizing the design of PBN springs for crystal growth applications.

  5. Arsenic speciation in sinter mineralization from a hydrothermal channel of El Tatio geothermal field, Chile (United States)

    Alsina, Marco A.; Zanella, Luciana; Hoel, Cathleen; Pizarro, Gonzalo E.; Gaillard, Jean-François; Pasten, Pablo A.


    El Tatio geothermal field is the principal natural source of arsenic for the Loa River, the main surface water resource in the hyper-arid Atacama Desert (Antofagasta Region, Northern Chile). Prior investigations by bulk X-ray absorption spectroscopy have identified hydrous ferric oxides as the principal arsenic-containing phase in sinter material from El Tatio, suggesting sorption as the main mechanism for arsenic scavenging by the solid phases of these hot spring environments. Here we examine siliceous sinter material sampled from a hydrothermal channel using synchrotron based X-ray micro-probe techniques, including As and Fe Kα X-ray fluorescence (μ-XRF), As K-edge X-ray absorption near edge structure (μ-XANES), and X-ray diffraction (μ-XRD). Least-squares linear fitting of μ-XANES spectra shows that arsenic is predominantly present as arsenate sorbed on hydrous ferric oxides (63% molar proportion), but we also identify nodular arsenide micro-mineralizations (37% molar proportion) similar to loellingite (FeAs2), not previously detected during bulk-scale analysis of the sinter material. Presence of arsenide mineralizations indicates development of anoxic environments on the surface of the siliceous sinter, and suggests a more complex biogeochemistry for arsenic than previously observed for circum-neutral pH brine hot spring environments.

  6. Coherent spin manipulation without magnetic fields in strained semiconductors. (United States)

    Kato, Y; Myers, R C; Gossard, A C; Awschalom, D D


    A consequence of relativity is that in the presence of an electric field, the spin and momentum states of an electron can be coupled; this is known as spin-orbit coupling. Such an interaction opens a pathway to the manipulation of electron spins within non-magnetic semiconductors, in the absence of applied magnetic fields. This interaction has implications for spin-based quantum information processing and spintronics, forming the basis of various device proposals. For example, the concept of spin field-effect transistors is based on spin precession due to the spin-orbit coupling. Most studies, however, focus on non-spin-selective electrical measurements in quantum structures. Here we report the direct measurement of coherent electron spin precession in zero magnetic field as the electrons drift in response to an applied electric field. We use ultrafast optical techniques to spatiotemporally resolve spin dynamics in strained gallium arsenide and indium gallium arsenide epitaxial layers. Unexpectedly, we observe spin splitting in these simple structures arising from strain in the semiconductor films. The observed effect provides a flexible approach for enabling electrical control over electron spins using strain engineering. Moreover, we exploit this strain-induced field to electrically drive spin resonance with Rabi frequencies of up to approximately 30 MHz.

  7. Performance of a Double Gate Nanoscale MOSFET (DG-MOSFET Based on Novel Channel Materials

    Directory of Open Access Journals (Sweden)

    Rakesh Prasher


    Full Text Available In this paper, we have studied a double gate nanoscale MOSFET for various channel materials using simulation approach. The device metrics considered at the nanometer scale are subthreshold swing (SS, drain induced barrier lowering (DIBL, on and off current, carrier injection velocity (vinj, etc. The channel materials studied are Silicon (Si, Germanium (Ge, Gallium Arsenide (GaAs, Zinc Oxide (ZnO, Zinc Sulfide (ZnS, Indium Arsenide (InAs, Indium Phosphide (InP and Indium Antimonide (InSb. The results suggest that InSb and InAs materials have highest Ion and lowest Ioff values when used in the channel of the proposed MOSFET. Besides, InSb has the highest values for Ion / Ioff ratio, vinj, transconductance (gm and improved short channel effects (SS = 59.71 and DIBL = 1.14, both are very close to ideal values. More results such as effect of quantum capacitance verses gate voltage (Vgs, drain current (Ids vs. gate voltage and drain voltage (Vds, ratio of transconductance (gm and drain current (Id vs. gate voltage, average velocity vs. gate voltage and injection velocity (Vinj for the mentioned channel materials have been investigated. Various results obtained indicate that InSb and InAs as channel material appear to be suitable for high performance logic and even low operating power requirements for future nanoscale devices as suggested by latest ITRS reports.

  8. Generalized Synthesis of EAs [E = Fe, Co, Mn, Cr] Nanostructures and Investigating Their Morphology Evolution

    Directory of Open Access Journals (Sweden)

    P. Desai


    Full Text Available This paper illustrates a novel route for the synthesis of nanostructured transition metal arsenides including those of FeAs, CoAs, MnAs, and CrAs through a generalized protocol. The key feature of the method is the use of one-step hot-injection and the clever use of a combination of precursors which are low-melting and highly reactive such as metal carbonyls and triphenylarsine in a solventless setup. This method also facilitates the formation of one-dimensional nanostructures as we move across the periodic table from CrAs to CoAs. The chemical basis of this reaction is simple redox chemistry between the transition metals, wherein the transition metal is oxidized from elemental state (E0 to E3+in lieu of reduction of As3+ to As3−. While the thermodynamic analysis reveals that all these conversions are spontaneous, it is the kinetics of the process that influences morphology of the product nanostructures, which varies from extremely small nanoparticles to nanorods. Transition metal pnictides show interesting magnetic properties and these nanostructures can serve as model systems for the exploration of their intricate magnetism as well as their applications and can also function as starting materials for the arsenide based nanosuperconductors.

  9. Synchrotron X-ray diffraction study of 112-type Ca{sub 1−x}La{sub x}FeAs{sub 2}

    Energy Technology Data Exchange (ETDEWEB)

    Katayama, N., E-mail:; Sugawara, K.; Nakano, A.; Kitou, S.; Sugiyama, Y.; Kawaguchi, N.; Ito, H.; Higuchi, T.; Fujii, T.; Sawa, H.


    Highlights: • Synchrotron X-ray diffraction structural studies of Ca{sub 1−x}La{sub x}FeAs{sub 2} are presented. • Crystal twins are found in Ca{sub 1−x}La{sub x}FeAs{sub 2} with nominal compositions of x = 0.25. • Contribution of sp hybridization for arsenic zigzag chains are discussed. • Possible structures of novel 112-type iron arsenides are discussed. - Abstract: Synchrotron X-ray diffraction studies of Ca{sub 1−x}La{sub x}FeAs{sub 2} with monovalent arsenic zigzag chain layers are presented. While the crystal twins appear in all samples for the nominal composition of x = 0.25, we successfully obtained the samples without crystal twins for the nominal composition of x = 0.17. We present the structural parameters obtained using the synchrotron X-ray diffraction data and physical properties for the samples with x = 0.17. We further discuss the tactics for exploring novel 112-type iron arsenides without arsenic zigzag chains.

  10. Diffusion in Intrinsic and Highly Doped III-V Semiconductors

    CERN Multimedia

    Stolwijk, N


    %title\\\\ \\\\Diffusion plays a key role in the fabrication of semiconductor devices. The diffusion of atoms in crystals is mediated by intrinsic point defects. Investigations of the diffusion behaviour of self- and solute atoms on the Ga sublattice of gallium arsenide led to the conclusion that in intrinsic and n-type material charged Ga vacancies are involved in diffusion processes whereas in p-type material diffusion if governed by charged Ga self-interstitials. Concerning the As sublattice of gallium arsenide there is a severe lack of reliable diffusion data. The few available literature data on intrinsic GaAs are not mutually consistent. A systematic study of the doping dependence of diffusion is completely missing. The most basic diffusion process - self-diffusion of As and its temperature and doping dependence - is practically not known. For GaP a similar statement holds.\\\\ \\\\The aim of the present project is to perform a systematic diffusion study of As diffusion in intrinsic and doped GaAs and in GaP. P...

  11. Transformational III-V Electronics

    KAUST Repository

    Nour, Maha A.


    Flexible electronics using III-V materials for nano-electronics with high electron mobility and optoelectronics with direct band gap are attractive for many applications. This thesis describes a complementary metal oxide semiconductor (CMOS) compatible process for transforming traditional III-V materials based electronics into flexible one. The thesis reports releasing 200 nm of Gallium Arsenide (GaAs) from 200 nm GaAs / 300 nm Aluminum Arsenide (AlAs) stack on GaAs substrate using diluted hydrofluoric acid (HF). This process enables releasing a single top layer compared to peeling off all layers with small sizes at the same time. This is done utilizing a network of release holes that contributes to the better transparency (45 % at 724 nm wavelengths) observed. Fabrication of metal oxide semiconductor capacitor (MOSCAPs) on GaAs is followed by releasing it to have devices on flexible 200 nm GaAs. Similarly, flexible GaSb and InP fabrication process is also reported to transform traditional electronics into large-area flexible electronics.

  12. Self-contained sub-millimeter wave rectifying antenna integrated circuit (United States)

    Siegel, Peter H. (Inventor)


    The invention is embodied in a monolithic semiconductor integrated circuit in which is formed an antenna, such as a slot dipole antenna, connected across a rectifying diode. In the preferred embodiment, the antenna is tuned to received an electromagnetic wave of about 2500 GHz so that the device is on the order of a wavelength in size, or about 200 microns across and 30 microns thick. This size is ideal for mounting on a microdevice such as a microrobot for example. The antenna is endowed with high gain in the direction of the incident radiation by providing a quarter-wavelength (30 microns) thick resonant cavity below the antenna, the cavity being formed as part of the monolithic integrated circuit. Preferably, the integrated circuit consists of a thin gallium arsenide membrane overlying the resonant cavity and supporting an epitaxial Gallium Arsenide semiconductor layer. The rectifying diode is a Schottky diode formed in the GaAs semiconductor layer and having an area that is a very small fraction of the wavelength of the 2500 GHz incident radiation. The cavity provides high forward gain in the antenna and isolation from surrounding structure.

  13. Growth initiation processes for GaAs and AlGaAs in CBE

    CERN Document Server

    Hill, D


    'in-growth' reconstruction to stabilise. However unlike for TMGa, GaAs growth with TEGa proceeds by a non-self limiting growth mode and TEGa rapidly dissociates. The result of this is that TEGa decomposes on top of other TEGa molecules, or their fragments and due to the high flux rate this leads to a 'stacking-up' of Ga on the surface. The presence of excess Ga provides a rapid increase of surface reflectance and then its subsequent decay as the excess Ga is incorporated by the increasing As content of the surface. The average growth rate during the transient period is equal to that of subsequent 'post-transient' period. However it is not certain as to whether the growth rate is constant throughout the transient period. The aim of this work was to investigate the nature of the transient period found in reflectance anisotropy (RA) measurements of high III:V BEP ratio growth of gallium arsenide (GaAs) and aluminium gallium arsenide (AIGaAs) by chemical beam epitaxy (CBE). Growth at substrate temperatures betwee...

  14. Voltage adjusting characteristics in terahertz transmission through Fabry-Pérot-based metamaterials

    Directory of Open Access Journals (Sweden)

    Jun Luo


    Full Text Available Metallic electric split-ring resonators (SRRs with featured size in micrometer scale, which are connected by thin metal wires, are patterned to form a periodically distributed planar array. The arrayed metallic SRRs are fabricated on an n-doped gallium arsenide (n-GaAs layer grown directly over a semi-insulating gallium arsenide (SI-GaAs wafer. The patterned metal microstructures and n-GaAs layer construct a Schottky diode, which can support an external voltage applied to modify the device properties. The developed architectures present typical functional metamaterial characters, and thus is proposed to reveal voltage adjusting characteristics in the transmission of terahertz waves at normal incidence. We also demonstrate the terahertz transmission characteristics of the voltage controlled Fabry-Pérot-based metamaterial device, which is composed of arrayed metallic SRRs. To date, many metamaterials developed in earlier works have been used to regulate the transmission amplitude or phase at specific frequencies in terahertz wavelength range, which are mainly dominated by the inductance-capacitance (LC resonance mechanism. However, in our work, the external voltage controlled metamaterial device is developed, and the extraordinary transmission regulation characteristics based on both the Fabry-Pérot (FP resonance and relatively weak surface plasmon polariton (SPP resonance in 0.025-1.5 THz range, are presented. Our research therefore shows a potential application of the dual-mode-resonance-based metamaterial for improving terahertz transmission regulation.

  15. The Incorporation of Lithium Alloying Metals into Carbon Matrices for Lithium Ion Battery Anodes (United States)

    Hays, Kevin A.

    An increased interest in renewable energies and alternative fuels has led to recognition of the necessity of wide scale adoption of the electric vehicle. Automotive manufacturers have striven to produce an electric vehicle that can match the range of their petroleum-fueled counterparts. However, the state-of-the-art lithium ion batteries used to power the current offerings still do not come close to the necessary energy density. The energy and power densities of the lithium ion batteries must be increased significantly if they are going to make electric vehicles a viable option. The chemistry of the lithium ion battery, based on lithium cobalt oxide cathodes and graphite anodes, is limited by the amount of lithium the cathode can provide and the anode will accept. While these materials have proven themselves in portable electronics over the past two decades, plausible higher energy alternatives do exist. The focus is of this study is on anode materials that could achieve a capacity of more than 3 times greater than that of graphite anodes. The lithium alloying anode materials investigated and reported herein include tin, arsenic, and gallium arsenide. These metals were synthesized with nanoscale dimensions, improving their electrochemical and mechanical properties. Each exhibits their own benefits and challenges, but all display opportunities for incorporation in lithium ion batteries. Tin is incorporated in multilayer graphene nanoshells by introducing small amounts of metal in the core and, separately, on the outside of these spheres. Electrolyte decomposition on the anode limits cycle life of the tin cores, however, tin vii oxides introduced outside of the multilayer graphene nanoshells have greatly improved long term battery performance. Arsenic is a lithium alloying metal that has largely been ignored by the research community to date. One of the first long term battery performance tests of arsenic is reported in this thesis. Anodes were made from nanoscale

  16. III - V semiconductor structures for biosensor and molecular electronics applications

    Energy Technology Data Exchange (ETDEWEB)

    Luber, S.M.


    The present work reports on the employment of III-V semiconductor structures to biosensor and molecular electronics applications. In the first part a sensor based on a surface-near two dimensional electron gas for a use in biological environment is studied. Such a two dimensional electron gas inherently forms in a molecular beam epitaxy (MBE) grown, doped aluminum gallium arsenide - gallium arsenide (AlGaAs-GaAs) heterostructure. Due to the intrinsic instability of GaAs in aqueous solutions the device is passivated by deposition of a monolayer of 4'-substituted mercaptobiphenyl molecules. The influence of these molecules which bind to the GaAs via a sulfur group is investigated by Kelvin probe measurements in air. They reveal a dependence of GaAs electron affinity on the intrinsic molecular dipole moment of the mercaptobiphenyls. Furthermore, transient surface photovoltage measurements are presented which demonstrate an additional influence of mercaptobiphenyl chemisorption on surface carrier recombination rates. As a next step, the influence of pH-value and salt concentration upon the sensor device is discussed based on the results obtained from sensor conductance measurements in physiological solutions. A dependence of the device surface potential on both parameters due to surface charging is deduced. Model calculations applying Poisson-Boltzmann theory reveal as possible surface charging mechanisms either the adsorption of OH- ions on the surface, or the dissociation of OH groups in surface oxides. A comparison between simulation settings and physical device properties indicate the OH- adsorption as the most probable mechanism. In the second part of the present study the suitability of MBE grown III-V semiconductor structures for molecular electronics applications is examined. In doing so, a method to fabricate nanometer separated, coplanar, metallic electrodes based on the cleavage of a supporting AlGaAs-GaAs heterostructure is presented. This is followed

  17. Scanning near-field infrared microscopy on semiconductor structures

    Energy Technology Data Exchange (ETDEWEB)

    Jacob, Rainer


    literature. While the structures of the first system were in the micrometer regime, the capability to probe buried nanostructures is demonstrated at a sample of indium arsenide quantum dots. Those dots are covered by a thick layer of gallium arsenide. For the first time ever, it is shown experimentally that transitions between electron states in single quantum dots can be investigated by near-field microscopy. By monitoring the near-field response of these quantum dots while scanning the wavelength of the incident light beam, it was possible to obtain characteristic near-field signatures of single dots. Near-field contrasts up to 30 % could be measured for resonant excitation of electrons in the conduction band of the indium arsenide dots. (orig.)

  18. Surface chemistry and physics of III/V compound semiconductors (United States)

    Fu, Qiang

    The surface chemistry of gallium arsenide and indium phosphide has been investigated using infrared spectroscopy (IR), scanning tunneling microscopy (STM), and ab initio molecular cluster calculations. The work presented here provides the first theoretical framework for studying the reaction sites on compound semiconductor surfaces. These sites consist of dimers and threefold-coordinated atoms in the second layer. Stable clusters of gallium arsenide, i.e., GaxAsyHz, where x, y = 4, 5 and z = 11, 13, are those in which the arsenic dangling bonds are filled, while the gallium dangling bonds are empty. By contrast, stable clusters of indium phosphide, i.e., InxPyHz, where x, y = 4, 5 and z = 10, 11, 13, are those in which the phosphorous dangling bonds are either filled or half filled, and the indium dangling bonds are empty. The most important contribution of this work is the discovery of a new surface structure, the InP (001)-(2 x 1). The InP (2 x 1) is terminated with a complete layer of phosphorous dimers with a half-filled dangling bond on every other phosphorous atom. The half-filled orbital violate the electron counting model [Pashley, Phys. Rev. B 1989, 40, 10481], and indicate that many more reconstructions are possible on these surfaces than was originally thought. Excellent agreement is achieved between the molecular cluster calculations and the measured vibrational frequencies of adsorbed hydrogen and arsine on gallium arsenide and indium phosphide (001) surfaces. On both GaAs and InP, mono-hydrogen and di-hydrogen bonds are formed with the three-coordinate, group V atoms and dimers. Conversely, electron deficient bridging hydrides are produced on the group III dimers. These latter species occur in isolated or coupled structures involving two or three metal atoms. In addition, we have elucidated the kinetics and mechanism of arsine decomposition on gallium-rich GaAs (001). The combination of STM, IR, and ab initio molecular cluster calculations provides a

  19. Interaction of coal-derived synthesis gas impurities with solid oxide fuel cell metallic components (United States)

    Marina, Olga A.; Pederson, Larry R.; Coyle, Christopher A.; Edwards, Danny J.; Chou, Yeong-Shyung; Cramer, Carolyn N.

    Oxidation-resistant alloys find use as interconnect materials, heat exchangers, and gas supply tubing in solid oxide fuel cell (SOFC) systems, especially when operated at temperatures below ∼800 °C. If fueled with synthesis gas derived from coal or biomass, such metallic components could be exposed to impurities contained in those fuel sources. In this study, coupons of ferritic stainless steels Crofer 22 APU and SS 441, austenitic nickel-chromium superalloy Inconel 600, and an alumina-forming high nickel alloy alumel were exposed to synthesis gas containing ≤2 ppm phosphorus, arsenic and antimony, and reaction products were tested. Crofer 22 APU coupons coated with a (Mn,Co) 3O 4 protective layer were also evaluated. Phosphorus was found to be the most reactive. On Crofer 22 APU, the (Mn,Cr) 3O 4 passivation layer reacted to form an Mn-P-O product, predicted to be manganese phosphate from thermochemical calculations, and Cr 2O 3. On SS 441, reaction of phosphorus with (Mn,Cr) 3O 4 led to the formation of manganese phosphate as well as an Fe-P product, predicted from thermochemical calculations to be Fe 3P. Minimal interactions with antimony or arsenic in synthesis gas were limited to Fe-Sb and Fe-As solid solution formation. Though not intended for use on the anode side, a (Mn,Co) 3O 4 spinel coating on Crofer 22 APU reacted with phosphorus in synthesis gas to produce products consistent with Mn 3(PO 4) 2 and Co 2P. A thin Cr 2O 3 passivation layer on Inconel 600 did not prevent the formation of nickel phosphides and arsenides and of iron phosphides and arsenides, though no reaction with Cr 2O 3 was apparent. On alumel, an Al 2O 3 passivation layer rich in Ni did not prevent the formation of nickel phosphides, arsenides, and antimonides, though no reaction with Al 2O 3 occurred. This work shows that unprotected metallic components of an SOFC stack and system can provide a sink for P, As and Sb impurities that may be present in fuel gases, and thus complicate

  20. Development of III-Sb Quantum Dot Systems for High Efficiency Intermediate Band Solar Cells

    Energy Technology Data Exchange (ETDEWEB)

    Huffaker, Diana [Univ. of California, Los Angeles, CA (United States); Hubbard, Seth [Rochester Inst. of Technology, NY (United States); Norman, Andrew [National Renewable Energy Lab. (NREL), Golden, CO (United States)


    This project aimed to develop solar cells that can help reduce cost per watt. This work focused on developing solar cells that utilize quantum dot (QD) nanomaterials to provide multijunction solar cell efficiency at the cost of single junction solar cell. We focused on a novel concept known as intermediate band solar cells (IBSC) where an additional energy band is inserted in a single solar cell to accommodate sub-bandgap photons absorption which otherwise are lost through transmission. The additional energy band can be achieved by growing QDs within a solar cell p-n junction. Though numerous studies have been conducted to develop such QD systems, very small improvements in solar energy conversion efficiency have been reported. This is mainly due to non-optimal material parameters such as band gap, band offset etc. In this work, we identified and developed a novel QD material system that meets the requirements of IBSC more closely than the current state-of-the-art technology. To achieve these goals, we focused on three important areas of solar cell design: band structure calculations of new materials, efficient device design for high efficiency, and development of new semiconductor materials. In this project, we focused on III-Sb materials as they possess a wide range of energy bandgaps from 0.2 eV to 2eV. Despite the difficulty involved in realizing these materials, we were successfully developed these materials through a systematic approach. Materials studied in this work are AlAsSb (Aluminum Arsenide Antimonide), InAlAs (Indium Aluminum Arsenide) and InAs (Indium Arsenide). InAs was used to develop QD layers within AlAsSb and InAlAs p-n junctions. As the QDs have very small volume, up to 30 QD layers been inserted into the p-n junction to enhance light absorption. These QD multi-stack devices helped in understanding the challenges associated with the development of quantum dot solar cells. The results from this work show that the quantum dot solar cells indeed

  1. Effects of growth temperature and device structure on GaP solar cells grown by molecular beam epitaxy

    Energy Technology Data Exchange (ETDEWEB)

    Vaisman, M.; Tomasulo, S.; Masuda, T.; Lang, J. R.; Faucher, J.; Lee, M. L. [Department of Electrical Engineering, Yale University, New Haven, Connecticut 06511 (United States)


    Gallium phosphide (GaP) is an attractive candidate for wide-bandgap solar cell applications, possessing the largest bandgap of the III-arsenide/phosphides without aluminum. However, GaP cells to date have exhibited poor internal quantum efficiency (IQE), even for photons absorbed by direct transitions, motivating improvements in material quality and device structure. In this work, we investigated GaP solar cells grown by molecular beam epitaxy over a range of substrate temperatures, employing a much thinner emitter than in prior work. Higher growth temperatures yielded the best solar cell characteristics, indicative of increased diffusion lengths. Furthermore, the inclusion of an AlGaP window layer improved both open-circuit voltage and short wavelength IQE.

  2. Micro-cooler enhancements by barrier interface analysis

    Energy Technology Data Exchange (ETDEWEB)

    Stephen, A.; Dunn, G. M. [Department of Physics, University of Aberdeen, King' s College, AB24 3UE Aberdeen (United Kingdom); Glover, J.; Oxley, C. H. [Department of Engineering, De Montfort University, Gateway, LE1 9BH Leicester (United Kingdom); Bajo, M. Montes; Kuball, M. [Center for Device Thermography and Reliability, H. H. Wills Physics Laboratory, University of Bristol, BS8 1TL Bristol (United Kingdom); Cumming, D. R. S.; Khalid, A. [School of Engineering, University of Glasgow, Rankine Building, G12 8LT Glasgow (United Kingdom)


    A novel gallium arsenide (GaAs) based micro-cooler design, previously analysed both experimentally and by an analytical Heat Transfer (HT) model, has been simulated using a self-consistent Ensemble Monte Carlo (EMC) model for a more in depth analysis of the thermionic cooling in the device. The best fit to the experimental data was found and was used in conjunction with the HT model to estimate the cooler-contact resistance. The cooling results from EMC indicated that the cooling power of the device is highly dependent on the charge distribution across the leading interface. Alteration of this charge distribution via interface extensions on the nanometre scale has shown to produce significant changes in cooler performance.

  3. X-ray imaging with photon counting hybrid semiconductor pixel detectors

    CERN Document Server

    Manolopoulos, S; Campbell, M; Snoeys, W; Heijne, Erik H M; Pernigotti, E; Raine, C; Smith, K; Watt, J; O'Shea, V; Ludwig, J; Schwarz, C


    Semiconductor pixel detectors, originally developed for particle physics experiments, have been studied as X-ray imaging devices. The performance of devices using the OMEGA 3 read-out chip bump-bonded to pixellated silicon semiconductor detectors is characterised in terms of their signal-to-noise ratio when exposed to 60 kVp X-rays. Although parts of the devices achieve values of this ratio compatible with the noise being photon statistics limited, this is not found to hold for the whole pixel matrix, resulting in the global signal-to-noise ratio being compromised. First results are presented of X-ray images taken with a gallium arsenide pixel detector bump-bonded to a new read-out chip, (MEDIPIX), which is a single photon counting read-out chip incorporating a 15-bit counter in every pixel. (author)

  4. X-ray imaging with photon counting hybrid semiconductor pixel detectors

    Energy Technology Data Exchange (ETDEWEB)

    Manolopoulos, S.; Bates, R.; Campbell, M.; Snoeys, W.; Heijne, E.; Pernigotti, E.; Raine, C.; Smith, K. E-mail:; Watt, J.; O' Shea, V.; Ludwig, J.; Schwarz, C


    Semiconductor pixel detectors, originally developed for particle physics experiments, have been studied as X-ray imaging devices. The performance of devices using the {omega}3 read-out chip bump-bonded to pixellated silicon semiconductor detectors is characterised in terms of their signal-to-noise ratio when exposed to 60 kVp X-rays. Although parts of the devices achieve values of this ratio compatible with the noise being photon statistics limited, this is not found to hold for the whole pixel matrix, resulting in the global signal-to-noise ratio being compromised. First results are presented of X-ray images taken with a gallium arsenide pixel detector bump-bonded to a new read-out chip, (MEDIPIX), which is a single photon counting read-out chip incorporating a 15-bit counter in every pixel. (author)

  5. Multimillion Atom Simulations of Nanostructured Materials on Parallel Computers ---Sintering and Consolidation, Fracture, and Oxidation--- (United States)

    Vashishta, P.; Bachlechner, M. E.; Campbell, T.; Kalia, R. K.; Kikuchi, H.; Kodiyalam, S.; Nakano, A.; Ogata, S.; Shimojo, F.; Walsh, P.

    Multiresolution molecular-dynamics approach for multimillion atom simulations has been used to investigate structural properties, mechanical failure in ceramic materials, and atomic-level stresses in nanoscale semiconductor/ceramic mesas (Si/Si3N4). Crack propagation and fracture in silicon nitride, silicon carbide, gallium arsenide, and nanophase ceramics are investigated. We observe a crossover from slow to rapid fracture and a correlation between the speed of crack propagation and morphology of fracture surface. A 100 million atom simulation is carried out to study crack propagation in GaAs. Mechanical failure in the Si/Si3N4 interface is studied by applying tensile strain parallel to the interface. Ten million atom molecular dynamics simulations are performed to determine atomic-level stress distributions in a 54 nm nanopixel on a 0.1 μm silicon substrate. Multimillion atom simulations of oxidation of aluminum nanoclusters and nanoindentation in silicon nitride are also discussed.

  6. Heterogeneous three-dimensional electronics by use of printed semiconductor nanomaterials. (United States)

    Ahn, Jong-Hyun; Kim, Hoon-Sik; Lee, Keon Jae; Jeon, Seokwoo; Kang, Seong Jun; Sun, Yugang; Nuzzo, Ralph G; Rogers, John A


    We developed a simple approach to combine broad classes of dissimilar materials into heterogeneously integrated electronic systems with two- or three-dimensional layouts. The process begins with the synthesis of different semiconductor nanomaterials, such as single-walled carbon nanotubes and single-crystal micro- and nanoscale wires and ribbons of gallium nitride, silicon, and gallium arsenide on separate substrates. Repeated application of an additive, transfer printing process that uses soft stamps with these substrates as donors, followed by device and interconnect formation, yields high-performance heterogeneously integrated electronics that incorporate any combination of semiconductor nanomaterials on rigid or flexible device substrates. This versatile methodology can produce a wide range of unusual electronic systems that would be impossible to achieve with other techniques.

  7. Role of atomic multiplets in the electronic structure of rare-earth semiconductors and semimetals. (United States)

    Pourovskii, Leonid V; Delaney, Kris T; Van de Walle, Chris G; Spaldin, Nicola A; Georges, Antoine


    We present a study of the effects of strong correlations in rare-earth pnictides, in which localized 4f states simultaneously retain atomiclike character and strongly influence the free-electron-like valence electron states. Using erbium arsenide as our example, we use a modern implementation of dynamical mean-field theory to obtain the atomic multiplet structure of the Er3+ 4f shell, as well as its unusually strong coupling to the electronic Fermi surfaces; these types of behavior are not correctly described within conventional electronic-structure methods. We are then able to explain the long-standing theoretical question of the quasisaturation of magnetization in an applied magnetic field, and to obtain the first quantitative agreement with experimental Shubnikov-de Haas frequencies of the Fermi-surface sheets.

  8. Non-linear absorption of 1.3-μm wavelength femtosecond laser pulses focused inside semiconductors: Finite difference time domain-two temperature model combined computational study (United States)

    Bogatyrev, I. B.; Grojo, D.; Delaporte, P.; Leyder, S.; Sentis, M.; Marine, W.; Itina, T. E.


    We present a theoretical model, which describes local energy deposition inside IR-transparent silicon and gallium arsenide with focused 1.3-μm wavelength femtosecond laser pulses. Our work relies on the ionization rate equation and two temperature model (TTM), as we simulate the non-linear propagation of focused femtosecond light pulses by using a 3D finite difference time domain method. We find a strong absorption dependence on the initial free electron density (doping concentration) that evidences the role of avalanche ionization. Despite an influence of Kerr-type self-focusing at intensity required for non-linear absorption, we show the laser energy deposition remains confined when the focus position is moved down to 1-mm below the surface. Our simulation results are in agreement with the degree of control observed in a simple model experiment.

  9. Numerical simulation and analysis of electrical and optical properties of Al(x)Ga(1-x)As / GaAs (United States)

    Eschrich, Heinz

    A numerical algorithm for description of gallium arsenide solar cells behavior with photovoltaic active window layer is developed. A partial nonlinear differential equation system, based on current, balance and Poisson equations, was solved using finite difference method. Spatial distributions of charge carrier concentration and potential were calculated using a recursive and iterative solution algorithm. Reflexion losses at all phase boundaries were determined using a matrix method. Solution algorithm was tested considering results of an analytical model of a solar cell with abrupt pn transition. From results of analytic optimization calculations, an improved structure was obtained, with a thinner emitter of 820 nm. The influence of surface and boundary recombination, diffusion length and cell geometry on spectral internal quantum efficiency was simulated.

  10. Mechanism for explaining differences in the order parameters of FeAs-based and FeP-based pnictide superconductors. (United States)

    Thomale, Ronny; Platt, Christian; Hanke, Werner; Bernevig, B Andrei


    We put forward a scenario that explains the difference between the order-parameter character in arsenide (As) and phosphorous (P) iron-based superconductors. Using functional renormalization group to analyze it in detail, we find that nodal superconductivity on the electron pockets (hole pocket gaps are always nodeless) can naturally appear when the hole pocket at (π,π) in the unfolded Brillouin zone is absent, as is the case in LaOFeP. There, electron-electron interactions render the gap on the electron pockets softly nodal (of s(±) form). When the pocket of d(xy) orbital character is present, intraorbital interactions with the d(xy) part of the electron Fermi surface drives the superconductivity nodeless.

  11. Transition from three-dimensional anisotropic spin excitations to two-dimensional spin excitations by electron doping the FeAs-based BaFe1.96Ni0.04As2 superconductor. (United States)

    Harriger, Leland W; Schneidewind, Astrid; Li, Shiliang; Zhao, Jun; Li, Zhengcai; Lu, Wei; Dong, Xiaoli; Zhou, Fang; Zhao, Zhongxian; Hu, Jiangping; Dai, Pengcheng


    We use neutron scattering to study the effect of electron doping on the structural or magnetic order in BaFe2As2. In the undoped state, BaFe2As2 exhibits simultaneous structural and magnetic phase transitions below 143 K. Upon electron doping to form BaFe1.96Ni0.04As2, the system first displays the lattice distortion near approximately 97 K, and then orders antiferromagnetically at 91 K before developing weak superconductivity below approximately 15 K. The effect of electron doping is to reduce the c-axis exchange coupling in BaFe2As2 and induce quasi-two-dimensional (2D) spin excitations. These results suggest that the transition from 3D spin waves to quasi-2D spin excitations by electron doping is important for the separated structural and magnetic phase transitions in iron arsenides.

  12. Superconductivity and ferromagnetism in hole-doped RbEuFe4As4 (United States)

    Liu, Yi; Liu, Ya-Bin; Tang, Zhang-Tu; Jiang, Hao; Wang, Zhi-Cheng; Ablimit, Abduweli; Jiao, Wen-He; Tao, Qian; Feng, Chun-Mu; Xu, Zhu-An; Cao, Guang-Han


    We discover a robust coexistence of superconductivity and ferromagnetism in an iron arsenide RbEuFe4As4 . The new material crystallizes in an intergrowth structure of RbFe2As2 and EuFe2As2 , such that the Eu sublattice turns out to be primitive instead of being body-centered in EuFe2As2 . The FeAs layers, featured by asymmetric As coordinations, are hole doped due to charge homogenization. Our combined measurements of electrical transport, magnetization, and heat capacity unambiguously and consistently indicate bulk superconductivity at 36.5 K in the FeAs layers and ferromagnetism at 15 K in the Eu sublattice. Interestingly, the Eu-spin ferromagnetic ordering belongs to a rare third-order transition, according to the Ehrenfest classification of phase transitions. We also identify an additional anomaly at ˜5 K, which is possibly associated with the interplay between superconductivity and ferromagnetism.

  13. Vector network analyzer measurement of the amplitude of an electrically excited surface acoustic wave and validation by X-ray diffraction (United States)

    Camara, I. S.; Croset, B.; Largeau, L.; Rovillain, P.; Thevenard, L.; Duquesne, J.-Y.


    Surface acoustic waves are used in magnetism to initiate magnetization switching, in microfluidics to control fluids and particles in lab-on-a-chip devices, and in quantum systems like two-dimensional electron gases, quantum dots, photonic cavities, and single carrier transport systems. For all these applications, an easy tool is highly needed to measure precisely the acoustic wave amplitude in order to understand the underlying physics and/or to optimize the device used to generate the acoustic waves. We present here a method to determine experimentally the amplitude of surface acoustic waves propagating on Gallium Arsenide generated by an interdigitated transducer. It relies on Vector Network Analyzer measurements of S parameters and modeling using the Coupling-Of-Modes theory. The displacements obtained are in excellent agreement with those measured by a very different method based on X-ray diffraction measurements.

  14. Incommensurate spin-density wave and magnetic lock-in transition in CaFe{sub 4}As{sub 3}.

    Energy Technology Data Exchange (ETDEWEB)

    Manuel, P.; Chapon, L. C.; Todorov, I. S.; Chung, D. Y.; Castellan, J.-P.; Rosenkranz, S.; Osborn, R.; Toledano, P.; Kanatzidis, M. G.; Materials Science Division; Rutherford Appleton Lab.; Univ. of Picardie; Northwestern Univ.


    The magnetic structure for the recently synthesized iron-arsenide compound CaFe4As3 has been studied by neutron-powder diffraction. Long-range magnetic order is detected below 85 K, with an incommensurate modulation described by the propagation vector k=(0,?,0), ??0.39. Below ?25 K, our measurements detect a first-order phase transition where ? locks into the commensurate value 3/8. A model of the magnetic structure is proposed for both temperature regimes, based on Rietveld refinements of the powder data and symmetry considerations. The structures correspond to longitudinal spin-density waves with magnetic moments directed along the b axis. A Landau analysis captures the change in thermodynamic quantities observed at the two magnetic transitions, in particular, the drop in resistivity at the lock-in transition.

  15. GaN Monolithic Power Amplifiers for Microwave Backhaul Applications

    Directory of Open Access Journals (Sweden)

    Roberto Quaglia


    Full Text Available Gallium nitride integrated technology is very promising not only for wireless applications at mobile frequencies (below 6 GHz but also for network backhaul radiolink deployment, now under deep revision for the incoming 5G generation of mobile communications. This contribution presents three linear power amplifiers realized on 0.25 μ m Gallium Nitride on Silicon Carbide monolithic integrated circuits for microwave backhaul applications: two combined power amplifiers working in the backhaul band around 7 GHz, and a more challenging third one working in the higher 15 GHz band. Architectures and main design steps are described, highlighting the pros and cons of Gallium Nitride with respect to the reference technology which, for these applications, is represented by gallium arsenide.

  16. Terahertz intersubband photodetectors based on semi-polar GaN/AlGaN heterostructures (United States)

    Durmaz, Habibe; Nothern, Denis; Brummer, Gordie; Moustakas, Theodore D.; Paiella, Roberto


    Terahertz intersubband photodetectors are developed based on GaN/AlGaN quantum wells grown on a free-standing semi-polar ( 20 2 ¯ 1 ¯ ) GaN substrate. These quantum wells are nearly free of the polarization-induced internal electric fields that severely complicate the design of nitride intersubband devices on traditional c-plane substrates. As a result, a promising bound-to-quasi-bound THz photodetector design can be implemented. Pronounced photocurrent peaks at the design frequency near 10 THz are measured, covering frequencies that are fundamentally inaccessible to existing arsenide intersubband devices due to reststrahlen absorption. This materials system provides a favorable platform to utilize the intrinsic advantages of nitride semiconductors for THz optoelectronics.

  17. Resonance-like tunneling across a barrier with adjacent wells

    Indian Academy of Sciences (India)

    S Mahadevan; P Prema; S K Agarwalla; B Sahu; C S Shastry


    We examine the behavior of transmission coefficient across the rectangular barrier when attractive potential well is present on one or both sides and also the same is studied for a smoother barrier with smooth adjacent wells having Woods–Saxon shape. We find that presence of well with suitable width and depth can substantially alter at energies below the barrier height leading to resonant-like structures. In a sense, this work is complementary to the resonant tunneling of particles across two rectangular barriers, which is being studied in detail in recent years with possible applications in mind. We interpret our results as due to resonant-like positive energy states generated by the adjacent wells. We describe in detail the possible potential application of these results in electronic devices using n-type oxygen-doped gallium arsenide and silicon dioxide. It is envisaged that these results will have applications in the design of tunneling devices.

  18. X-ray induced optical reflectivity

    Directory of Open Access Journals (Sweden)

    Stephen M. Durbin


    Full Text Available The change in optical reflectivity induced by intense x-ray pulses can now be used to study ultrafast many body responses in solids in the femtosecond time domain. X-ray absorption creates photoelectrons and core level holes subsequently filled by Auger or fluorescence processes, and these excitations ultimately add conduction and valence band carriers that perturb optical reflectivity. Optical absorption associated with band filling and band gap narrowing is shown to explain the basic features found in recent measurements on an insulator (silicon nitride, Si3N4, a semiconductor (gallium arsenide, GaAs, and a metal (gold, Au, obtained with ∼100 fs x-ray pulses at 500-2000 eV and probed with 800 nm laser pulses. In particular GaAs exhibits an abrupt drop in reflectivity, persisting only for a time comparable to the x-ray excitation pulse duration, consistent with prompt band gap narrowing.

  19. Recent developments in low cost silicon solar cells for terrestrial applications. [sheet production methods (United States)

    Leipold, M. H.


    A variety of techniques may be used for photovoltaic energy systems. Concentrated or not concentrated sunlight may be employed, and a number of materials can be used, including silicon, gallium arsenide, cadmium sulfide, and cadmium telluride. Most of the experience, however, has been obtained with silicon cells employed without sunlight concentration. An industrial base exists at present for producing solar cells at a price in the range from $15 to $30 per peak watt. A major federal program has the objective to reduce the price of power provided by silicon solar systems to approximately $1 per peak watt in the early 1980's and $0.50 per watt by 1986. The approaches considered for achieving this objective are discussed.

  20. Structural and magnetic phase transitions in NdCoAsO under high pressures

    Energy Technology Data Exchange (ETDEWEB)

    Uhoya, Walter; Tsoi, Georgiy M.; Vohra, Yogesh K.; McGuire, Michael A.; Sefat, Athena S.; Sales, Brian C.; Mandrus, David; Weir, Samuel T. (UAB); (ORNL); (LLNL)


    We have investigated structural and magnetic phase transitions under high pressures in a quaternary rare-earth transition-metal arsenide oxide NdCoAsO compound that is isostructural to the high temperature superconductor parent phase NdFeAsO. The four-probe electrical resistance measurements carried out in a designer diamond anvil cell show that the ferromagnetic Curie temperature and antiferromagnetic Neel temperature increase with an increase in pressure. High pressure x-ray diffraction studies using a synchrotron source show a structural phase transition from a tetragonal phase to a new crystallographic phase at a pressure of 23 GPa at 300 K. The NdCoAsO sample remained antiferromagnetic and non-superconducting down to 10 K and up to the highest pressure achieved in this experiment, 53 GPa. A P-T phase diagram for NdCoAsO is presented from ambient conditions to P = 53 GPa and T = 10 K.

  1. Structural and magnetic phase transitions in NdCoAsO under high pressures

    Energy Technology Data Exchange (ETDEWEB)

    Uhoya, Walter [University of Alabama, Birmingham; Tsoi, Georgiy [University of Alabama, Birmingham; Vohra, Y. K. [University of Alabama, Birmingham; McGuire, Michael A [ORNL; Sefat, A. S. [Oak Ridge National Laboratory (ORNL); Sales, Brian C [ORNL; Mandrus, David [ORNL; Weir, S. T. [Lawrence Livermore National Laboratory (LLNL)


    We have investigated structural and magnetic phase transitions under high pressures in a quaternary rare-earth transition-metal arsenide oxide NdCoAsO compound that is isostructural to the high temperature superconductor parent phase NdFeAsO. The four-probe electrical resistance measurements carried out in a designer diamond anvil cell show that the ferromagnetic Curie temperature and antiferromagnetic Neel temperature increase with an increase in pressure. High pressure x-ray diffraction studies using a synchrotron source show a structural phase transition from a tetragonal phase to a new crystallographic phase at a pressure of 23 GPa at 300 K. The NdCoAsO sample remained antiferromagnetic and non-superconducting down to 10 K and up to the highest pressure achieved in this experiment, 53 GPa. A P-T phase diagram for NdCoAsO is presented from ambient conditions to P = 53 GPa and T = 10 K.

  2. Low concentration ratio solar array for low Earth orbit multi-100kW application. Volume 2: Drawings (United States)

    Nalbandian, S. J.; French, E. P.


    A preliminary design effort directed toward a low concentration ratio photovoltaic array system based on 1984 technology and capable of delivering multi-hundred kilowatts (300 kW to 100 kW range) in low Earth orbit. The array system consists of two or more array modules each capable of delivering between 113 kW to 175 kW using silicon solar cells or gallium arsenide solar cells, respectively. The array module deployed area is 1320 square meters and consists of 4356 pyramidal concentrator elements. The module, when stowed in the Space Shuttle's payload bay, has a stowage volume of a cube with 3.24 meters on a side. The concentrator elements are sized for a geometric concentration ratio (GCR) of six with an aperture area of 0.5 meters x 0.5 meters. Drawings for the preliminary design configuration and for the test hardware that was fabricated for design evaluation and test are provided.

  3. Optical, thermal, and electrical performance of low-CR solar arrays. [Concentration Ratio (United States)

    French, E. P.; Mills, M. W.; Backovsky, Z.


    This paper describes the analysis and testing of a photovoltaic low-CR concentrator shaped like a truncated pyramid with an aperture of 0.5 m on a side and a geometric concentration ratio of six. The truncated base plane is covered by either silicon (Si) or gallium arsenide (GaAs) solar cells. Ray-trace analysis of the concentrator predicts a peak optical efficiency of 0.77, which falls off only gradually with pointing error. A coupled thermal-electrical analysis of the system shows that the moderately nonuniform illumination produced by the concentrator does not result in significant mismatch losses, provided the solar cells are connected in parallel groups. The results of ground tests involving a full-scale prototype concentrator conform well with theoretical predictions.

  4. Characterization of GaN films grown on GaAs by AP-MOVPE

    Energy Technology Data Exchange (ETDEWEB)

    Vilchis, H; Sanchez-R, V M; Escobosa, A, E-mail: [Department of Electrical Engineering, CINVESTAV-IPN, Av. Instituto Politecnico Nacional 2508 Col. San Pedro Zacatenco C.P. 07360 Mexico D.F (Mexico)


    In this paper we present the results of the synthesis of GaN in an AP-MOVPE system heated by infrared lamps starting from gallium nitride films obtained by nitridation of gallium arsenide. Although dependence of the characteristics of the different parameters of the deposition process on the properties of the layers has been widely studied, the influence of the nature and design of the heating source has been only scarcely reported. We show that the ratio between the two phases depends on the characteristics of the heating source, as well as on other growth parameters. Our results show a compromise between the characteristics of the photoluminescence spectra, the surface morphology and the cubic phase to hexagonal phase ratio. The growth conditions can be adjusted for optimal performance.

  5. Cell membrane conformation at vertical nanowire array interface revealed by fluorescence imaging (United States)

    Berthing, Trine; Bonde, Sara; Rostgaard, Katrine R.; Hannibal Madsen, Morten; Sørensen, Claus B.; Nygård, Jesper; Martinez, Karen L.


    The perspectives offered by vertical arrays of nanowires for biosensing applications in living cells depend on the access of individual nanowires to the cell interior. Recent results on electrical access and molecular delivery suggest that direct access is not always obtained. Here, we present a generic approach to directly visualize the membrane conformation of living cells interfaced with nanowire arrays, with single nanowire resolution. The method combines confocal z-stack imaging with an optimized cell membrane labelling strategy which was applied to HEK293 cells interfaced with 2-11 μm long and 3-7 μm spaced nanowires with various surface coatings (bare, aminosilane-coated or polyethyleneimine-coated indium arsenide). We demonstrate that, for all commonly used nanowire lengths, spacings and surface coatings, nanowires generally remain enclosed in a membrane compartment, and are thereby not in direct contact with the cell interior.

  6. Organic semiconductors in a spin

    CERN Document Server

    Samuel, I


    A little palladium can go a long way in polymer-based light-emitting diodes. Inorganic semiconductors such as silicon and gallium arsenide are essential for countless applications in everyday life, ranging from PCs to CD players. However, while they offer unrivalled computational speed, inorganic semiconductors are also rigid and brittle, which means that they are less suited to applications such as displays and flexible electronics. A completely different class of materials - organic semiconductors - are being developed for these applications. Organic semiconductors have many attractive features: they are easy to make, they can emit visible light, and there is tremendous scope for tailoring their properties to specific applications by changing their chemical structure. Research groups and companies around the world have developed a wide range of organic-semiconductor devices, including transistors, light-emitting diodes (LEDs), solar cells and lasers. (U.K.)

  7. Pulsed-laser therapy (GA-As) in combined treatment of post-traumatic swellings and some dermatological disorders (United States)

    Antipa, Ciprian; Dona, Dumitru; Podoleanu, Adrian Gh.


    The effect of a pulsed gallium arsenide infrared laser radiation was studied on 64 patients with post traumatic swellings, allergic vasculitis and varicose crural ulcers, therapy resistant. The soft laser therapy was conducted in combination with classical therapy and was compared with a non irradiated control group of 52 patients treated only by classical therapy. Laser irradiation was directed to the skin damage by laser scanning. Segmental and dermatomic areas of the skin lesions were irradiated by laserpuncture. Therapeutic protocol included an average of nine sessions. The statistical analysis shows a significant difference of the efficiency between Ga-As pulsed laser treated group and the control group, especially in the case of post-traumatic swellings and less in the case of allergic vasculitis. The effects reported by this study are relevant for clinical application of infrared pulsed low lasers in dermatology.

  8. Electrodeposition of Metal on GaAs Nanowires (United States)

    Liu, Chao; Einabad, Omid; Watkins, Simon; Kavanagh, Karen


    Copper (Cu) electrical contacts to freestanding gallium arsenide (GaAs) nanowires have been fabricated via electrodeposition. The nanowires are zincblende (111) oriented grown epitaxially on n-type Si-doped GaAs (111)B substrates by gold-catalyzed Vapor Liquid Solid (VLS) growth in a metal organic vapour phase epitaxy (MOVPE) reactor. The epitaxial electrodeposition process, based on previous work with bulk GaAs substrates, consists of a substrate oxide pre-etch in dilute ammonium-hydroxide carried out prior to galvanostatic electrodeposition in a pure Cu sulphate aqueous electrolyte at 20-60^oC. For GaAs nanowires, we find that Cu or Fe has a preference for growth on the gold catalyst avoiding the sidewalls. After removing gold, both metals still prefer to grow only on top of the nanowire, which has the largest potential field.

  9. Dopant profiling with the scanning electron microscope

    CERN Document Server

    Elliott, S L


    This dissertation is a detailed study of dopant profiling with the scanning electron microscope (SEM) using secondary electrons. The technique has been applied to a wide variety of doped silicon, gallium arsenide and gallium nitride semiconductor test structures as well as a metal-oxide field effect transistor and several light emitting diodes. A concise set of guide-lines are provided for users of this technique, including the optimum SEM operating conditions that should be used for maximum contrast, an image manipulation procedure, and the resolution and sensitivity limits that can be expected. Dopant contrast observed with the SEM has been studied over the past few years by a number of researchers, and a theory for the contrast has evolved. This theory considers the patch fields outside the specimen to be the dominant factor determining the secondary electron intensity. In this dissertation the contrast mechanism has been further investigated by examining the contrast at different temperatures and after su...

  10. Extraction of second harmonic from the In0.53Ga0.47As planar Gunn diode using radial stub resonators (United States)

    Maricar, Mohamed Ismaeel; Khalid, A.; Glover, J.; Evans, G. A.; Vasileious, P.; Li, Chong; Cumming, D.; Oxley, C. H.


    Planar Indium Gallium Arsenide (InGaAs) Gunn diodes with on chip matching circuits have been fabricated on a semi-insulating Indium Phosphide (InP) substrate to enable the extraction of the second harmonic in millimeter-wave and terahertz frequencies. The planar Gunn diodes were designed in coplanar waveguide (CPW) format with an active channel length of 4 μm and width 120 μm integrated to CPW matching circuit and radial stub resonator to suppress the fundamental and to extract the second harmonic. The initial experimental measurements have given a second harmonic signal at 118 GHz with an output power of -20 dBm and the fundamental signal at 59 GHz was suppressed to the noise level of the experimental set-up.

  11. Lateral IBIC analysis of GaAs Schottky diodes

    Energy Technology Data Exchange (ETDEWEB)

    Vittone, E. [Experimental Physics Department, ' Nanostructured interfaces and surfaces' (NIS) Centre of Excellence of the University of Torino, and INFN - Torino (Italy) and INFM, Research Unit of Torino-University, Via P. Giuria 1, 10125 Torino (Italy)]. E-mail:; Olivero, P. [Experimental Physics Department, ' Nanostructured interfaces and surfaces' (NIS) Centre of Excellence of the University of Torino, and INFN - Torino (Italy) and INFM, Research Unit of Torino-University, Via P. Giuria 1, 10125 Torino (Italy)]. E-mail:; Nava, F. [INFN and Departimento di Fisica, Universita di Modena e Reggio Emilia, Via Campi, 213/A - 41100 Modena (Italy); Manfredotti, C. [Experimental Physics Department, ' Nanostructured interfaces and surfaces' (NIS) Centre of Excellence of the University of Torino, and INFN - Torino (Italy); INFM, Research Unit of Torino-University, Via P. Giuria 1, 10125 Torino (Italy); Lo Giudice, A. [INFM, Research Unit of Torino-University, Via P. Giuria 1, 10125 Torino (Italy); Fizzotti, F. [Experimental Physics Department, ' Nanostructured interfaces and surfaces' (NIS) Centre of Excellence of the University of Torino, and INFN - Torino (Italy); INFM, Research Unit of Torino-University, Via P. Giuria 1, 10125 Torino (Italy); Egeni, G. [INFN - Laboratori Nazionali di Legnaro, Viale dell' Universita 2, 35020 Legnaro (Pd) (Italy)


    Charge collection efficiency (CCE) profiles of a semi-insulating (SI) gallium arsenide LEC (Liquid Encapsulated Czochralski) Schottky diode have been investigated by lateral Ion Beam Induced Charge collection (IBIC) technique. A focussed 2.4 MeV proton microbeam was scanned over the cleaved surface of a SI-GaAs diode and the charge collection efficiency was evaluated as a function of the ion beam position at different bias voltages. By fitting the CCE profiles with the equations derived by the Shockley-Ramo-Gunn's theorem, drift lengths of electrons and holes were obtained. Experimental results are consistent with previous OBIC (Optical Beam Induced Current) and SP (Surface Potential) measurements and confirm the model based on the formation of a Mott barrier due to the enhanced electron capture cross section in high field conditions.

  12. Micro and nano devices in passive millimetre wave imaging systems (United States)

    Appleby, R.


    The impact of micro and nano technology on millimetre wave imaging from the post war years to the present day is reviewed. In the 1950s whisker contacted diodes in mixers and vacuum tubes were used to realise both radiometers and radars but required considerable skill to realise the performance needed. Development of planar semiconductor devices such as Gunn and Schottky diodes revolutionised mixer performance and provided considerable improvement. The next major breakthrough was high frequency transistors based on gallium arsenide which were initially used at intermediate frequencies but later after further development at millimeter wave frequencies. More recently Monolithic Microwave Integrated circuits(MMICs) offer exceptional performance and the opportunity for innovative design in passive imaging systems. In the future the use of micro and nano technology will continue to drive system performance and we can expect to see integration of antennae, millimetre wave and sub millimetre wave circuits and signal processing.

  13. Silicon optical modulators

    Directory of Open Access Journals (Sweden)

    Graham T. Reed


    Full Text Available Ever since the earliest research on optical circuits, dating back to the 1970s, there have been visions of an optical superchip (see for example1,2, containing a variety of integrated optical components to carry out light generation, modulation, manipulation, detection, and amplification (Fig. 1. The early work was associated with ferroelectric materials such as lithium niobate (LiNbO3, and III-V semiconductors such as gallium arsenide (GaAs and indium phosphide (InP based systems. LiNbO3 was interesting almost solely because of the fact that it possesses a large electro-optic coefficient3, enabling optical modulation via the Pockels effect. Alternatively, the III-V compounds were interesting because of the relative ease of laser fabrication and the prospect of optical and electronic integration.

  14. Lead sulphide nanocrystal photodetector technologies (United States)

    Saran, Rinku; Curry, Richard J.


    Light detection is the underlying principle of many optoelectronic systems. For decades, semiconductors including silicon carbide, silicon, indium gallium arsenide and germanium have dominated the photodetector industry. They can show excellent photosensitivity but are limited by one or more aspects, such as high production cost, high-temperature processing, flexible substrate incompatibility, limited spectral range or a requirement for cryogenic cooling for efficient operation. Recently lead sulphide (PbS) nanocrystals have emerged as one of the most promising new materials for photodetector fabrication. They offer several advantages including low-cost manufacturing, solution processability, size-tunable spectral sensitivity and flexible substrate compatibility, and they have achieved figures of merit outperforming conventional photodetectors. We review the underlying concepts, breakthroughs and remaining challenges in photodetector technologies based on PbS nanocrystals.

  15. First tests of a Medipix-1 pixel detector for X-ray dynamic defectoscopy

    CERN Document Server

    Vavrik, D; Visschers, J; Pospísil, S; Ponchut, C; Zemankova, J


    Recent theoretical damage material models describe the dynamic development of voids and microcracks in materials under plastic deformation. For these models, experimental verification is needed. We propose direct and non-destructive observation of the propagation of material damage by measuring changes in transmission of X-rays penetrating a stressed material, using a photon-counting X-ray imager. The present contribution aims to demonstrate the applicability of silicon and gallium-arsenide devices for X-ray transmission measurements with a specimen of high-ductile aluminium alloy under study. The first experiments to determine the resolution and the sensitivity of the proposed method with the Medipix-1 pixel detector are presented.

  16. Integrated three-dimensional photonic nanostructures for achieving near-unity solar absorption and superhydrophobicity (United States)

    Kuang, Ping; Hsieh, Mei-Li; Lin, Shawn-Yu


    In this paper, we proposed and realized 3D photonic nanostructures consisting of ultra-thin graded index antireflective coatings (ARCs) and woodpile photonic crystals. The use of the integrated ARC and photonic crystal structure can achieve broadband, broad-angle near unity solar absorption. The amorphous silicon based photonic nanostructure experimentally shows an average absorption of ˜95% for λ = 400-620 nm over a wide angular acceptance of θ = 0°-60°. Theoretical studies show that a Gallium Arsenide (GaAs) based structure can achieve an average absorption of >95% for λ = 400-870 nm. Furthermore, the use of the slanted SiO2 nanorod ARC surface layer by glancing angle deposition exhibits Cassie-Baxter state wetting, and superhydrophobic surface is obtained with highest water contact angle θCB ˜ 153°. These properties are fundamentally important for achieving maximum solar absorption and surface self-cleaning in thin film solar cell applications.

  17. Plasmonic Light Trapping in an Ultrathin Photovoltaic Layer with Film-Coupled Metamaterial Structures

    CERN Document Server

    Wang, Hao


    A film-coupled metamaterial structure is numerically investigated for enhancing the light absorption in an ultrathin photovoltaic layer of crystalline gallium arsenide (GaAs). The top subwavelength concave grating and the bottom metallic film could not only effectively trap light with the help of wave interference and magnetic resonance effects excited above the bandgap, but also practically serve as electrical contacts for photon-generated charge collection. The energy absorbed by the active layer is greatly enhanced in the film-coupled metamaterial structure, resulting in significant enhancement on the short-circuit current density by three times over a free-standing GaAs layer at the same thickness. The results would facilitate the development of next-generation ultrathin solar cells with lower cost and higher efficiency.

  18. Mechanical design of a low concentration ratio solar array for a space station application (United States)

    Biss, M. S.; Hsu, L.


    This paper describes a preliminary study and conceptual design of a low concentration ratio solar array for a space station application with approximately a 100 kW power requirement. The baseline design calls for a multiple series of inverted, truncated, pyramidal optical elements with a geometric concentration ratio (GCR) of 6. It also calls for low life cycle cost, simple on-orbit maintainability, 1984 technology readiness date, and gallium arsenide (GaAs) of silicon (Si) solar cell interchangeability. Due to the large area needed to produce the amount of power required for the baseline space station, a symmetrical wing design, making maximum use of the commonality of parts approach, was taken. This paper will describe the mechanical and structural design of a mass-producible solar array that is very easy to tailor to the needs of the individual user requirement.

  19. Optical and Surface Characteristics of Mg-Doped GaAs Nanocrystalline Thin Film Deposited by Thermionic Vacuum Arc Technique (United States)

    Pat, Suat; Özen, Soner; Şenay, Volkan; Korkmaz, Şadan


    Magnesium (Mg) is the most promising p-type dopant for gallium arsenide (GaAs) semiconductor technology. Mg-doped GaAs nanocrystalline thin film has been deposited at room temperature by the thermionic vacuum arc technique, a rapid deposition method for production of doped GaAs material. The microstructure and surface and optical properties of the deposited sample were investigated by x-ray diffraction analysis, scanning electron microscopy, energy-dispersive x-ray spectroscopy, atomic force microscopy, ultraviolet-visible spectrophotometry, and interferometry. The crystalline direction of the deposited sample was determined to be (220) plane and (331) plane at 44.53° and 72.30°, respectively. The Mg-doped GaAs nanocrystalline sample showed high transmittance.

  20. Enhancing Solar Cell Efficiency Using Photon Upconversion Materials

    Directory of Open Access Journals (Sweden)

    Yunfei Shang


    Full Text Available Photovoltaic cells are able to convert sunlight into electricity, providing enough of the most abundant and cleanest energy to cover our energy needs. However, the efficiency of current photovoltaics is significantly impeded by the transmission loss of sub-band-gap photons. Photon upconversion is a promising route to circumvent this problem by converting these transmitted sub-band-gap photons into above-band-gap light, where solar cells typically have high quantum efficiency. Here, we summarize recent progress on varying types of efficient upconversion materials as well as their outstanding uses in a series of solar cells, including silicon solar cells (crystalline and amorphous, gallium arsenide (GaAs solar cells, dye-sensitized solar cells, and other types of solar cells. The challenge and prospect of upconversion materials for photovoltaic applications are also discussed

  1. Performance evaluation of a lossy transmission lines based diode detector at cryogenic temperature (United States)

    Villa, E.; Aja, B.; de la Fuente, L.; Artal, E.


    This work is focused on the design, fabrication, and performance analysis of a square-law Schottky diode detector based on lossy transmission lines working under cryogenic temperature (15 K). The design analysis of a microwave detector, based on a planar gallium-arsenide low effective Schottky barrier height diode, is reported, which is aimed for achieving large input return loss as well as flat sensitivity versus frequency. The designed circuit demonstrates good sensitivity, as well as a good return loss in a wide bandwidth at Ka-band, at both room (300 K) and cryogenic (15 K) temperatures. A good sensitivity of 1000 mV/mW and input return loss better than 12 dB have been achieved when it works as a zero-bias Schottky diode detector at room temperature, increasing the sensitivity up to a minimum of 2200 mV/mW, with the need of a DC bias current, at cryogenic temperature.

  2. Influence of photon recycling effects in the operation and design of GaAs solar cells; Influencia del reciclaje de fotones en el funcionamiento y del diseno de las celulas solares de Arsenico de Galio

    Energy Technology Data Exchange (ETDEWEB)

    Balenzategui Manzanares, J. L.


    Photon recycling (PR) is the process by which photons internally emitted in a semiconductor can be re-absorbed by the material, giving as result new electron-hole pairs. Although this process has been receiving some international research from the Sixties, because their effects revealed as relevant in certain devices and materials (as in gallium arsenide), its influence in the operation of solar cells has been scarcely considered in the past. Thus deposited it has been demonstrated that one of its major effects is an enhancement of the radiative carrier lifetine, photon recycling is not usually taken into account in photovoltaic, neither in device modelling and simulation, nor from the perspective of taking advantage of the phenomenon to improve the efficiency of solar cells. This work describes the results of our investigations in the field of photon recycling. (Author)

  3. Photonic crystals possessing multiple Weyl points and the experimental observation of robust surface states (United States)

    Chen, Wen-Jie; Xiao, Meng; Chan, C. T.


    Weyl points, as monopoles of Berry curvature in momentum space, have captured much attention recently in various branches of physics. Realizing topological materials that exhibit such nodal points is challenging and indeed, Weyl points have been found experimentally in transition metal arsenide and phosphide and gyroid photonic crystal whose structure is complex. If realizing even the simplest type of single Weyl nodes with a topological charge of 1 is difficult, then making a real crystal carrying higher topological charges may seem more challenging. Here we design, and fabricate using planar fabrication technology, a photonic crystal possessing single Weyl points (including type-II nodes) and multiple Weyl points with topological charges of 2 and 3. We characterize this photonic crystal and find nontrivial 2D bulk band gaps for a fixed kz and the associated surface modes. The robustness of these surface states against kz-preserving scattering is experimentally observed for the first time.

  4. Scanning SQUID microscopy on polycrystalline SmFeAsO_{0.85} and NdFeAsO_{0.94}F_{0.06}

    Energy Technology Data Exchange (ETDEWEB)

    Hicks, Clifford W.; Lippman, Thomas M.; Moler, Kathryn A.; /Stanford U., Geballe Lab.; Huber, Martin E.; /Colorado U.; Ren, Zhi-An; Zhao, Zhong-Xian; /Beijing, Inst. Phys.


    The order parameter of the recently-discovered ferric arsenide family of superconductors remains uncertain. Some early experiments on polycrystalline samples suggested line nodes in the order parameter, however later experiments on single crystals have strongly supported fully-gapped superconductivity. An absence of nodes does not rule out unconventional order: {pi} phase shifts between the separate Fermi sheets and time-reversal symmetry-breaking components in the order parameter remain possibilities. One test for unconventional order is scanning magnetic microscopy on well-coupled polycrystalline samples: d- or p-wave order would result in orbital frustration, leading to spontaneous currents and magnetization in the superconducting state. We have performed scanning SQUID microscopy on SmFeAsO{sub 0.85} and NdFeAsO{sub 0.94}F{sub 0.06}, and in neither material do we find spontaneous orbital currents, ruling out p- or d-wave order.

  5. Visible and Near-Infrared Contrast of Faculae in Active Region NOAA 8518

    Institute of Scientific and Technical Information of China (English)

    Yan Xu; Guo Yang; Jiong Qiu; Tom J. Spirock; Ju Jing; Carsten Denker; Haimin Wang


    We compare the contrast of faculae, in visible light and in the near infrared (NIR), that were associated with the active region NOAA 8518 which crossed the solar disk from April 19 to 27, 1999. We obtained NIR continuum images at 1.6μm at the Big Bear Solar Observatory (BBSO) with an Indium Gallium Arsenide (In Ga As) NIR digital camera. We also obtained high-resolution longitudinal magnetograms and visible light filtergrams at 610.3 nm with the newly developed Digital Vector Magnetograph (DVMG). Our data show that the contrast of faculae has the same sign in both the visible and the NIR. We did not find any so-called "dark faculae", faculae that are bright in the visible and simultaneously dark in the NIR.We determined a threshold magnetic flux density that separates pores from faculae.

  6. Three-photon absorption in optical parametric oscillators based on OP-GaAs (United States)

    Heckl, Oliver H.; Bjork, Bryce J.; Winkler, Georg; Bryan Changala, P.; Spaun, Ben; Porat, Gil; Bui, Thinh Q.; Lee, Kevin F.; Jiang, Jie; Fermann, Martin E.; Schunemann, Peter G.; Ye, Jun


    We report on the first singly-resonant (SR), synchronously pumped optical parametric oscillator (OPO) based on orientation-patterned gallium arsenide (OP-GaAs). Together with a doubly resonant (DR) degenerate OPO based on the same OP-GaAs material, the output spectra cover 3 to 6 ${\\mu}$m within ~3 dB of relative power. The DR-OPO has the highest output power reported to date from a femtosecond, synchronously pumped OPO based on OP-GaAs. We discovered strong three photon absorption with a coefficient of 0.35 ${\\pm}$ 0.06 cm${^3}$/GW${^2}$ for our OP-GaAs sample, which limits the output power of these OPOs as mid-IR light sources. We present a detailed study of the three photon loss on the performance of both the SR and DR-OPOs, and compare them to those without this loss mechanism.

  7. Three Photon Absorption in Optical Parametric Oscillators Based on OP-GaAs

    CERN Document Server

    Heckl, Oliver H; Winkler, Georg; Changala, P Bryan; Spaun, Ben; Porat, 1 Gil; Bui, Thinh Q; Lee, Kevin F; Jiang, Jie; Fermann, Martin; Schunemann, Peter G; Ye, Jun


    We report on the first singly-resonant (SR), synchronously pumped optical parametric oscillator (OPO) based on orientation-patterned gallium arsenide (OP-GaAs). Together with a doubly resonant (DR) degenerate OPO based on the same OP-GaAs material, the output spectra cover 3 to 6 ${\\mu}$m within ~3 dB of relative power. The DR-OPO has the highest output power reported to date from a femtosecond, synchronously pumped OPO based on OP-GaAs. We discovered strong three photon absorption with a coefficient of 0.35 ${\\pm}$ 0.06 cm${^3}$/GW${^2}$ for our OP-GaAs sample, which limits the output power of these OPOs as mid-IR light sources. We present a detailed study of the three photon loss on the performance of both the SR and DR-OPOs, and compare them to those without this loss mechanism.

  8. Scalable high-precision tuning of photonic resonators by resonant cavity-enhanced photoelectrochemical etching (United States)

    Gil-Santos, Eduardo; Baker, Christopher; Lemaître, Aristide; Gomez, Carmen; Leo, Giuseppe; Favero, Ivan


    Photonic lattices of mutually interacting indistinguishable cavities represent a cornerstone of collective phenomena in optics and could become important in advanced sensing or communication devices. The disorder induced by fabrication technologies has so far hindered the development of such resonant cavity architectures, while post-fabrication tuning methods have been limited by complexity and poor scalability. Here we present a new simple and scalable tuning method for ensembles of microphotonic and nanophotonic resonators, which enables their permanent collective spectral alignment. The method introduces an approach of cavity-enhanced photoelectrochemical etching in a fluid, a resonant process triggered by sub-bandgap light that allows for high selectivity and precision. The technique is presented on a gallium arsenide nanophotonic platform and illustrated by finely tuning one, two and up to five resonators. It opens the way to applications requiring large networks of identical resonators and their spectral referencing to external etalons.

  9. Reconfigurable photonic data networks for military aircraft (United States)

    Weaver, T. L.; Seal, D. W.; Hoard, M. A.

    The authors propose a photonic switched network approach capable of supporting multi-gigabit-per-second data rate transmissions, independent of protocol, over a large number of simultaneous, independent paths. To form the heart of this network, a single chip, gallium arsenide (GaAs), all-optical crossbar switch suitable for application to fighter aircraft has been developed. This monolithic photonic crossbar requires no electrical/optical conversions; thus it provides a transparent network interface. It is capable of digital data transmission at rates from dc to at least 2 Gb/s, independently of communication protocol or format. It can connect any input to any available output without disturbing existing connections, and it is capable of broadcasting signals from one input to multiple outputs. It can reconfigure its input to output routings in less than 1.0 ns. The authors report on optical switch technology assessment, and laboratory evaluation of photonic data bus star repeaters.

  10. Focusing effect of bent GaAs crystals for gamma-ray Laue lenses: Monte Carlo and experimental results

    CERN Document Server

    Virgilli, E; Rosati, P; Bonnini, E; Buffagni, E; Ferrari, C; Stephen, J B; Caroli, E; Auricchio, N; Basili, A; Silvestri, S


    We report on results of observation of the focusing effect from the planes (220) of Gallium Arsenide (GaAs) crystals. We have compared the experimental results with the simulations of the focusing capability of GaAs tiles through a developed Monte Carlo. The GaAs tiles were bent using a lapping process developed at the cnr/imem - Parma (Italy) in the framework of the laue project, funded by ASI, dedicated to build a broad band Laue lens prototype for astrophysical applications in the hard X-/soft gamma-ray energy range (80-600 keV). We present and discuss the results obtained from their characterization, mainly in terms of focusing capability. Bent crystals will significantly increase the signal to noise ratio of a telescope based on a Laue lens, consequently leading to an unprecedented enhancement of sensitivity with respect to the present non focusing instrumentation.

  11. Optical absorption enhancement in a hybrid system photonic crystal - thin substrate for photovoltaic applications. (United States)

    Buencuerpo, Jeronimo; Munioz-Camuniez, Luis E; Dotor, Maria L; Postigo, Pablo A


    A hybrid approach for light trapping using photonic crystal nanostructures (nanorods, nanopillars or nanoholes) on top of an ultra thin film as a substrate is presented. The combination of a nanopatterned layer with a thin substrate shows an enhanced optical absorption than equivalent films without patterning and can compete in performance with nanostructured systems without a substrate. The designs are tested in four relevant materials: amorphous silicon (a-Si), crystalline silicon (Si), gallium arsenide (GaAs) and indium phosphide (InP). A consistent enhancement is observed for all of the materials when using a thin hybrid system (300 nm) even compared to the non patterned thin film with an anti-reflective coating (ARC). A realistic solar cell structure composed of a hybrid system with a layer of indium tin oxide (ITO) an ARC and a back metal layer is performed, showing an 18% of improvement for the nanostructured device.

  12. Surface impedance of BaFe2-xNixAs2 in the radio frequency range

    Directory of Open Access Journals (Sweden)

    A. Abbassi


    Full Text Available We report measurements of the temperature dependence of the surface impedance in superconducting BaFe1.93Ni0.07As2 crystals using the radiofrequency reflection technique in the 5arsenide superconductors BaFe2-xNixAs2 has attracted much interest. For a Ni doping level of 7% the superconducting phase transition is found around 20K. The temperature dependence of the superconducting penetration depth was determined.

  13. Low energy Ne ion beam induced-modifications of magnetic properties in MnAs thin films (United States)

    Trassinelli, M.; Carlsson, L. Bernard; Cervera, S.; Eddrief, M.; Etgens, V. H.; Gafton, E. V.; Lacaze, E.; Lamour, E.; Lévy, A.; Macé, S.; Prigent, C.; Rozet, J.-P.; Steydli, S.; Marangolo, M.; Vernhet, D.


    Investigations of the complex behavior of the magnetization of manganese arsenide thin films due to defects induced by irradiation of slow heavy ions are presented. In addition to the thermal hysteresis suppression already highlighted in Trassinelli et al (2014 Appl. Phys. Lett. 104 081906), we report here on new local magnetic features recorded by a magnetic force microscope at different temperatures close to the characteristic sample phase transition. Complementary measurements of the global magnetization in different conditions (applied magnetic field and temperatures) enable the film characterization to be completed. The obtained results suggest that the ion bombardment produces regions where the local mechanical constraints are significantly different from the average, promoting the local presence of magneto-structural phases far from the equilibrium. These regions could be responsible for the thermal hysteresis suppression previously reported, irradiation-induced defects acting as seeds in the phase transition.

  14. Photonic crystals possessing multiple Weyl points and the experimental observation of robust surface states (United States)

    Chen, Wen-Jie; Xiao, Meng; Chan, C. T.


    Weyl points, as monopoles of Berry curvature in momentum space, have captured much attention recently in various branches of physics. Realizing topological materials that exhibit such nodal points is challenging and indeed, Weyl points have been found experimentally in transition metal arsenide and phosphide and gyroid photonic crystal whose structure is complex. If realizing even the simplest type of single Weyl nodes with a topological charge of 1 is difficult, then making a real crystal carrying higher topological charges may seem more challenging. Here we design, and fabricate using planar fabrication technology, a photonic crystal possessing single Weyl points (including type-II nodes) and multiple Weyl points with topological charges of 2 and 3. We characterize this photonic crystal and find nontrivial 2D bulk band gaps for a fixed kz and the associated surface modes. The robustness of these surface states against kz-preserving scattering is experimentally observed for the first time. PMID:27703140

  15. Fabrication and characterization of a microaccelerometer based on resonant-tunneling diodes (United States)

    Li, Mengwei; Deng, Tao; Du, Kang; Chu, WeiHang; Liu, Jun; Chen, Houjin; Liu, Zewen


    A microaccelerometer based on gallium arsenide (GaAs) resonant-tunneling diodes (RTDs) is demonstrated. The input acceleration signal can be transformed into an output electrical signal using the meso-piezoresistive effects of the RTDs located at the root of the detection beams. Finite element simulations were performed to design, analyze, and optimize the structures of the accelerometer. The accelerometer was fabricated using a combination of GaAs IC surface and bulk micromachining techniques. Vibrating tests and shock tests were conducted to investigate the accelerometer characteristics. The experimental results revealed that the sensitivity of the RTD accelerometer was 7.91 mV/g. The noise resolution was ˜1.264 mg/√Hz, and the working frequency was up to 3 kHz.

  16. Noble metal nanoclusters and nanoparticles precede mineral formation in magmatic sulphide melts. (United States)

    Helmy, Hassan M; Ballhaus, Chris; Fonseca, Raúl O C; Wirth, Richard; Nagel, Thorsten; Tredoux, Marian


    In low temperature aqueous solutions, it has long been recognized by in situ experiments that many minerals are preceded by crystalline nanometre-sized particles and non-crystalline nanophases. For magmatic systems, nanometre-sized precursors have not yet been demonstrated to exist, although the suggestion has been around for some time. Here we demonstrate by high temperature quench experiments that platinum and arsenic self-organize to nanoparticles, well before the melt has reached a Pt-As concentration at which discrete Pt arsenide minerals become stable phases. If all highly siderophile elements associate to nanophases in undersaturated melts, the distribution of the noble metals between silicate, sulphide and metal melts will be controlled by the surface properties of nano-associations, more so than by the chemical properties of the elements.

  17. Induced changes in refractive index, optical band gap, and absorption edge of polycarbonate-SiO2 thin films by Vis-IR lasers (United States)

    Ehsani, Hassan; Akhoondi, Somaieh


    In this experimental work, we have studied induced changes in refractive index, extinction coefficient, and optical band-gap of Bisphenol-A-polycarbonate (BPA-PC) coated with a uniform and thin, anti-scratch SiO2 film irradiated by visible to near-infrared lasers at 532 nm (green),650 nm(red), and 980 nm (IR)wavelength lasers with different energy densities. Our lasers sources are indium-gallium-aluminum-phosphide, second harmonic of neodymium-YAG-solid state lasers and gallium-aluminum-arsenide-semiconductor laser. The energy densities of our sources have been changed by changing the spot size of incident laser. samples transmission spectra were monitored by carry500 spectrophotometer and induced changes in optical properties are evaluated by using, extrapolation of the transmission spectrum through Swanepoel method and computer application

  18. Angle-resolved cathodoluminescence imaging polarimetry

    CERN Document Server

    Osorio, Clara I; Brenny, Benjamin; Polman, Albert; Koenderink, A Femius


    Cathodoluminescence spectroscopy (CL) allows characterizing light emission in bulk and nanostructured materials and is a key tool in fields ranging from materials science to nanophotonics. Previously, CL measurements focused on the spectral content and angular distribution of emission, while the polarization was not fully determined. Here we demonstrate a technique to access the full polarization state of the cathodoluminescence emission, that is the Stokes parameters as a function of the emission angle. Using this technique, we measure the emission of metallic bullseye nanostructures and show that the handedness of the structure as well as nanoscale changes in excitation position induce large changes in polarization ellipticity and helicity. Furthermore, by exploiting the ability of polarimetry to distinguish polarized from unpolarized light, we quantify the contributions of different types of coherent and incoherent radiation to the emission of a gold surface, silicon and gallium arsenide bulk semiconductor...

  19. Resonantly enhanced second-harmonic generation using III-V semiconductor all-dielectric metasurfaces

    CERN Document Server

    Liu, Sheng; Keeler, Gordon A; Sinclair, Michael B; Yang, Yuanmu; Reno, John; Pertsch, Thomas; Brener, Igal


    Nonlinear optical phenomena in nanostructured materials have been challenging our perceptions of nonlinear optical processes that have been explored since the invention of lasers. For example, the ability to control optical field confinement, enhancement, and scattering almost independently, allows nonlinear frequency conversion efficiencies to be enhanced by many orders of magnitude compared to bulk materials. Also, the subwavelength length scales render phase matching issues irrelevant. Compared with plasmonic nanostructures, dielectric resonator metamaterials show great promise for enhanced nonlinear optical processes due to their larger mode volumes. Here, we present, for the first time, resonantly enhanced second-harmonic generation (SHG) using Gallium Arsenide (GaAs) based dielectric metasurfaces. Using arrays of cylindrical resonators we observe SHG enhancement factors as large as 104 relative to unpatterned GaAs. At the magnetic dipole resonance we measure an absolute nonlinear conversion efficiency o...

  20. Effect of starting materials on the superconducting properties of SmFeAsO1-xFx tapes (United States)

    Wang, Chunlei; Yao, Chao; Zhang, Xianping; Gao, Zhaoshun; Wang, Dongliang; Wang, Chengduo; Lin, He; Ma, Yanwei; Awaji, Satoshi; Watanabe, Kazuo


    SmFeAsO1-xFx tapes were prepared using three kinds of starting materials. This showed that the starting materials have an obvious effect on the impurity phases in the final superconducting tapes. Compared with the other samples, the samples fabricated with SmAs, FeO, Fe2As, and SmF3 have the smallest arsenide impurity phases and voids. As a result, these samples possess much denser structures and better grain connectivities. Moreover, among the three kinds of sample fabricated in this work, this kind of sample has the highest zero resistivity temperature, ˜40 K, and the largest critical current density, ˜4600 A cm-2, in self-field at 4.2 K. This is the highest Jc value reported so far for SmFeAsO1-xFx wires and tapes.

  1. Superconductivity in Co-doped SmFeAsO

    Energy Technology Data Exchange (ETDEWEB)

    Qi Yanpeng; Gao Zhaoshun; Wang Lei; Wang Dongliang; Zhang Xianping; Ma Yanwei [Key Laboratory of Applied Superconductivity, Institute of Electrical Engineering, Chinese Academy of Sciences, PO Box 2703, Beijing 100190 (China)], E-mail:


    Here we report the synthesis and characterizations of SmFe{sub 1-x}Co{sub x}AsO (x = 0.10, 0.15) for the first time. The parent compound SmFeAsO itself is not superconducting but shows an antiferromagnetic order near 150 K, which must be suppressed by doping before superconductivity emerges. With Co doping in the FeAs planes, antiferromagnetic order is destroyed and superconductivity occurs at 15.2 K. Similar to LaFe{sub 1-x}Co{sub x}AsO, the SmFe{sub 1-x}Co{sub x}AsO system appears to tolerate considerable disorder in the FeAs planes. This result is important, suggesting a different mechanism for cuprate superconductors compared to the iron-based arsenide ones.

  2. Removal and separation of impurity ions in preparation of high-purity inorganic salts%高纯无机盐制备中杂质离子的去除与分离

    Institute of Scientific and Technical Information of China (English)



    介绍了在制备高纯无机盐过程中,有害杂质离子——重有色金属离子(Cu、Mg、Zn、Pd、Cd等)、铁离子、砷化物的去除与分离方法:氧化-还原法、难溶金属氢氧化物沉淀法、硫化物沉淀法.%Introduced in the preparation of high purity inorganic salt process, harmful impurity ion-heavy non-ferrous metal ion (Cu,Mg,Zn,Pd,CDS,etc. ) ,iron ion,arsenide in removing and separation methods : oxidation-reduction method and difficult to thick metal hydroxide precipitation, sulfide precipitation.

  3. GaAs epitaxy on Si substrates: modern status of research and engineering

    Energy Technology Data Exchange (ETDEWEB)

    Bolkhovityanov, Yu B; Pchelyakov, O P [Institute of Semiconductor Physics, Siberian Branch of the Russian Academy of Sciences, Novosibirsk (Russian Federation)


    While silicon and gallium arsenide are dominant materials in modern micro- and nanoelectronics, devices fabricated from them still use Si and GaAs substrates only separately. Integrating these materials on the (highest effeciency) substrate of Si has been the subject of much research effort for more than twenty years. This review systematizes and generalizes the current understanding of the fundamental physical mechanisms governing the epitaxial growth of GaAs and its related III-V compounds on Si substrates. Basic techniques avilable for improving the quality of such heterostructures are described, and recent advances in fabricating device-quality A{sup III}B{sup V}/Si heterostructures and devices on their bases are also presented. (reviews of topical problems)

  4. Micro-cooler enhancements by barrier interface analysis

    Directory of Open Access Journals (Sweden)

    A. Stephen


    Full Text Available A novel gallium arsenide (GaAs based micro-cooler design, previously analysed both experimentally and by an analytical Heat Transfer (HT model, has been simulated using a self-consistent Ensemble Monte Carlo (EMC model for a more in depth analysis of the thermionic cooling in the device. The best fit to the experimental data was found and was used in conjunction with the HT model to estimate the cooler-contact resistance. The cooling results from EMC indicated that the cooling power of the device is highly dependent on the charge distribution across the leading interface. Alteration of this charge distribution via interface extensions on the nanometre scale has shown to produce significant changes in cooler performance.

  5. An electrical probe of the phonon mean-free path spectrum (United States)

    Ramu, Ashok T.; Halaszynski, Nicole I.; Peters, Jonathan D.; Meinhart, Carl D.; Bowers, John E.


    Most studies of the mean-free path accumulation function (MFPAF) rely on optical techniques to probe heat transfer at length scales on the order of the phonon mean-free path. In this paper, we propose and implement a purely electrical probe of the MFPAF that relies on photo-lithographically defined heater-thermometer separation to set the length scale. An important advantage of the proposed technique is its insensitivity to the thermal interfacial impedance and its compatibility with a large array of temperature-controlled chambers that lack optical ports. Detailed analysis of the experimental data based on the enhanced Fourier law (EFL) demonstrates that heat-carrying phonons in gallium arsenide have a much wider mean-free path spectrum than originally thought.

  6. Clinical and Experimental Study of Gaalas Phototherapy for Tемрoromandibular Disorders

    Directory of Open Access Journals (Sweden)

    Nencheva-Svechtarova S.


    Full Text Available The objective of this study was to test the clinical effectiveness of the gallium-aluminum-arsenide laser (GaAlAs; 785 nm and superluminiscent diodes (633 nm phototherapy (MedX 1100 device for the treatment of patients with temporomandibular disorders and myofascial pain syndrome. The results demonstrated a positive effect in pain relief. A significant reduction (p < 0.05 in the level of pain was observed for the temporomandibular joint and for the masseter muscles using paired samples t-test and Wilcoxon signed rank test. The experimental study on pork muscle samples showed that a the main part of laser radiation is absorbed by the tissue in thin layer of 3-4 mm, b in the spectral region 650-950 nm the intensity of light penetration is about 0.2-0.25 percent of the initial light intensity.

  7. Detrapping and retrapping of free carriers in nominally pure single crystal GaP, GaAs and 4H-SiC semiconductors under light illumination at cryogenic temperatures

    CERN Document Server

    Mouneyrac, David; Floch, Jean-Michel Le; Tobar, Michael E; Cros, Dominique; Krupka, Jerzy


    We report on extremely sensitive measurements of changes in the microwave properties of high purity non-intentionally-doped single-crystal semiconductor samples of gallium phosphide, gallium arsenide and 4H-silicon carbide when illuminated with light of different wavelengths at cryogenic temperatures. Whispering gallery modes were excited in the semiconductors whilst they were cooled on the coldfinger of a single-stage cryocooler and their frequencies and Q-factors measured under light and dark conditions. With these materials, the whispering gallery mode technique is able to resolve changes of a few parts per million in the permittivity and the microwave losses as compared with those measured in darkness. A phenomenological model is proposed to explain the observed changes, which result not from direct valence to conduction band transitions but from detrapping and retrapping of carriers from impurity/defect sites with ionization energies that lay in the semiconductor band gap. Detrapping and retrapping relax...

  8. Review of wide band-gap semiconductors technology

    Directory of Open Access Journals (Sweden)

    Jin Haiwei


    Full Text Available Silicon carbide (SiC and gallium nitride (GaN are typical representative of the wide band-gap semiconductor material, which is also known as third-generation semiconductor materials. Compared with the conventional semiconductor silicon (Si or gallium arsenide (GaAs, wide band-gap semiconductor has the wide band gap, high saturated drift velocity, high critical breakdown field and other advantages; it is a highly desirable semiconductor material applied under the case of high-power, high-temperature, high-frequency, anti-radiation environment. These advantages of wide band-gap devices make them a hot spot of semiconductor technology research in various countries. This article describes the research agenda of United States and European in this area, focusing on the recent developments of the wide band-gap technology in the US and Europe, summed up the facing challenge of the wide band-gap technology.

  9. PDT in non-surgical treatment of periodontitis in kidney transplanted patients: a split-mouth, randomized clinical trial (United States)

    Marinho, Kelly C. T.; Giovani, Elcio M.


    This study was to evaluate clinical and microbiological effectiveness of photodynamic therapy (PDT) in the treatment of periodontal disease in kidney-transplanted patients. Eight kidney transplanted patients treated at Paulista University were arranged in two groups: SRP performed scaling and root planning by ultrasound; SRP+PDT- in the same patient, which was held to PDT in the opposite quadrant, with 0.01% methylene blue and red laser gallium aluminum arsenide, wavelength 660 nm, power 100 mW. There was reduction in probing pocket depth after 45 days and 3 months regardless the group examined; plaque and bleeding index showed improvement over time, regardless the technique used, and bleeding index in the SRP+PDT group was lower when compared with the baseline the other times. There was no difference in the frequency of pathogens. Photodynamic therapy may be an option for treatment of periodontal disease in renal-transplanted patients and its effectiveness is similar to conventional therapy.

  10. InGaAs PV Device Development for TPV Power Systems (United States)

    Wilt, David M.; Fatemi, Navid S.; Hoffman, Richard W., Jr.; Jenkins, Phillip P.; Brinker, David J.; Scheiman, David; Lowe, Roland; Chubb, Donald


    lndium Gallium Arsenide (InGaAs) photovoltaic devices have been fabricated with bandgaps ranging from 0.75 eV to 0.60 eV on Indium Phosphide (InP) substrates. Reported efficiencies have been as high as 11.2% (AMO) for the lattice matched 0.75 eV devices. The 0.75 eV cell demonstrated 14.8% efficiency under a 1500 K blackbody with a projected efficiency of 29.3%. The lattice mismatched devices (0.66 and 0.60 eV) demonstrated measured efficiencies of 8% and 6% respectively under similar conditions. Low long wavelength response and high dark currents are responsible for the poor performance of the mismatched devices. Temperature coefficients have been measured and are presented for all of the bandgaps tested.

  11. Optimization of material/device parameters of CdTe photovoltaic for solar cells applications (United States)

    Wijewarnasuriya, Priyalal S.


    Cadmium telluride (CdTe) has been recognized as a promising photovoltaic material for thin-film solar cell applications due to its near optimum bandgap of ~1.5 eV and high absorption coefficient. The energy gap is near optimum for a single-junction solar cell. The high absorption coefficient allows films as thin as 2.5 μm to absorb more than 98% of the above-bandgap radiation. Cells with efficiencies near 20% have been produced with poly-CdTe materials. This paper examines n/p heterostructure device architecture. The performance limitations related to doping concentrations, minority carrier lifetimes, absorber layer thickness, and surface recombination velocities at the back and front interfaces is assessed. Ultimately, the paper explores device architectures of poly- CdTe and crystalline CdTe to achieve performance comparable to gallium arsenide (GaAs).

  12. Dynamic kirigami structures for integrated solar tracking. (United States)

    Lamoureux, Aaron; Lee, Kyusang; Shlian, Matthew; Forrest, Stephen R; Shtein, Max


    Optical tracking is often combined with conventional flat panel solar cells to maximize electrical power generation over the course of a day. However, conventional trackers are complex and often require costly and cumbersome structural components to support system weight. Here we use kirigami (the art of paper cutting) to realize novel solar cells where tracking is integral to the structure at the substrate level. Specifically, an elegant cut pattern is made in thin-film gallium arsenide solar cells, which are then stretched to produce an array of tilted surface elements which can be controlled to within ±1°. We analyze the combined optical and mechanical properties of the tracking system, and demonstrate a mechanically robust system with optical tracking efficiencies matching conventional trackers. This design suggests a pathway towards enabling new applications for solar tracking, as well as inspiring a broader range of optoelectronic and mechanical devices.

  13. Manipulation of adsorbed atoms and creation of new structures on room-temperature surfaces with a scanning tunneling microscope. (United States)

    Whitman, L J; Stroscio, J A; Dragoset, R A; Celotta, R J


    A general method of manipulating adsorbed atoms and molecules on room-temperature surfaces with the use of a scanning tunneling microscope is described. By applying an appropriate voltage pulse between the sample and probe tip, adsorbed atoms can be induced to diffuse into the region beneath the tip. The field-induced diffusion occurs preferentially toward the tip during the voltage pulse because of the local potential energy gradient arising from the interaction of the adsorbate dipole moment with the electric field gradient at the surface. Depending upon the surface and pulse parameters, cesium (Cs) structures from one nanometer to a few tens of nanometers across have been created in this way on the (110) surfaces of gallium arsenide (GaAs) and indium antimonide (InSb), including structures that do not naturally occur.

  14. Ultrahigh bandwidth signal processing

    DEFF Research Database (Denmark)

    Oxenløwe, Leif Katsuo


    Optical time lenses have proven to be very versatile for advanced optical signal processing. Based on a controlled interplay between dispersion and phase-modulation by e.g. four-wave mixing, the processing is phase-preserving, an hence useful for all types of data signals including coherent multi......-level modulation founats. This has enabled processing of phase-modulated spectrally efficient data signals, such as orthogonal frequency division multiplexed (OFDM) signa In that case, a spectral telescope system was used, using two time lenses with different focal lengths (chirp rates), yielding a spectral...... regeneratio These operations require a broad bandwidth nonlinear platform, and novel photonic integrated nonlinear platform like aluminum gallium arsenide nano-waveguides used for 1.28 Tbaud optical signal processing will be described....

  15. Transient reflectance of photoexcited Cd{sub 3}As{sub 2}

    Energy Technology Data Exchange (ETDEWEB)

    Weber, C. P., E-mail:; Berggren, Bryan S. [Department of Physics, Santa Clara University, 500 El Camino Real, Santa Clara, California 95053-0315 (United States); Arushanov, Ernest; Nateprov, Alex [Institute of Applied Physics, Academy of Sciences of Moldova, Academiei str. 5, MD 2028 Chisinau (Moldova, Republic of); Hosseini, Tahereh; Kouklin, Nikolai [Departments of Electrical Engineering and Computer Science, University of Wisconsin-Milwaukee, P.O. Box 413, Milwaukee, Wisconsin 53201 (United States)


    We report ultrafast transient-grating measurements of crystals of the three-dimensional Dirac semimetal cadmium arsenide, Cd{sub 3}As{sub 2}, at both room temperature and 80 K. After photoexcitation with 1.5-eV photons, charge-carriers relax by two processes, one of duration 500 fs and the other of duration 3.1 ps. By measuring the complex phase of the change in reflectance, we determine that the faster signal corresponds to a decrease in absorption, and the slower signal to a decrease in the light's phase velocity, at the probe energy. We attribute these signals to electrons' filling of phase space, first near the photon energy and later at lower energy. We attribute their decay to cooling by rapid emission of optical phonons, then slower emission of acoustic phonons. We also present evidence that both the electrons and the lattice are strongly heated.

  16. Universal Infantry Weapons Trainer (UIWT). Volume 1. M-16 Rifle Model. (United States)


    source used in the system is a semiconductor, gallium arsenide laser. The laser is collimated by a simple plano convex lens. The laser is attached where...UfSATSOATA LITE~tlY ’%.CH’, /s PIF#, 3-48 OF 80/2P MAUAL U5MRTSSTATUS LITERALLY 6ED9’, /* PiE 3-44 *./ EcC LITERALLY ’±R; /* AS(I I "EsCFm * ZERO LITERALLY...H EI E CHIP CT 9026 15 1 EN I E6t E EXTEIEI INTEPRUPTS 41? A 2 WRIT: NOY R,R2 ,GET PIE STATUS *218 627 93 JZ WRIT ,IF 0lJETE ENPTY NO ACTION 𔄁 𔄂

  17. AlGaAs-On-Insulator Nonlinear Photonics

    CERN Document Server

    Pu, Minhao; Semenova, Elizaveta; Yvind, Kresten


    The combination of nonlinear and integrated photonics has recently seen a surge with Kerr frequency comb generation in micro-resonators as the most significant achievement. Efficient nonlinear photonic chips have myriad applications including high speed optical signal processing, on-chip multi-wavelength lasers, metrology, molecular spectroscopy, and quantum information science. Aluminium gallium arsenide (AlGaAs) exhibits very high material nonlinearity and low nonlinear loss when operated below half its bandgap energy. However, difficulties in device processing and low device effective nonlinearity made Kerr frequency comb generation elusive. Here, we demonstrate AlGaAs-on-insulator as a nonlinear platform at telecom wavelengths. Using newly developed fabrication processes, we show high-quality-factor (Q>100,000) micro-resonators with integrated bus waveguides in a planar circuit where optical parametric oscillation is achieved with a record low threshold power of 3 mW and a frequency comb spanning 350 nm i...

  18. Vertical nanowire arrays as a versatile platform for protein detection and analysis

    DEFF Research Database (Denmark)

    Rostgaard, Katrine R.; Frederiksen, Rune S.; Liu, Yi-Chi;


    Protein microarrays are valuable tools for protein assays. Reducing spot sizes from micro- to nano-scale facilitates miniaturization of platforms and consequently decreased material consumption, but faces inherent challenges in the reduction of fluorescent signals and compatibility with complex...... the NWs unnecessary. Fluorescence detection of proteins allows quantitative measurements and spatial resolution, enabling us to track individual NWs through several analytical steps, thereby allowing multiplexed detection of different proteins immobilized on different regions of the NW array. We use NW...... arrays for on-chip extraction, detection and functional analysis of proteins on a nano-scale platform that holds great promise for performing protein analysis on minute amounts of material. The demonstration made here on highly ordered arrays of indium arsenide (InAs) NWs is generic and can be extended...

  19. Transient-Grating Study of Electron and Hole Diffusion in (Ga,Mn)As (United States)

    Kittlaus, Eric


    Dilute magnetic semiconductors are a class of materials exhibiting both semiconducting and ferromagnetic properties while being chemically similar to traditional semiconductors. This dual nature presents the opportunity for new ``spintronic'' devices, with the caveat that current dilute magnetic semiconductors are only ferromagnetic above their subzero Curie temperature, Tc. In order to develop new materials functional at room temperature, it is necessary to develop a better theoretical understanding of how such materials become magnetic, a result of microscopic electronic processes. One of the most common dilute magnetic semiconductors, (Ga,Mn)As, is produced by doping Gallium Arsenide with manganese. We use a laser-based experiment, transient-grating spectroscopy, to measure the diffusive motion of electrons and holes in (Ga,Mn)As, which provides information related to the processes which control magnetism in these materials. We present preliminary data and calculations and discuss further improvements in experimental design that will provide unprecedented insight into the microscopic workings of dilute magnetic semiconductors.

  20. Microelectronics, radiation, and superconductivity. (United States)

    Gochfeld, M


    Among the costs of technology are health hazards that face employees and consumers. New advances in the highly competitive field of microelectronics involve exposure to a variety of hazards such as gallium arsenide. Small high-technology industries appear unprepared to invest in health and safety. Although stray electromagnetic fields are not a new development, researchers are beginning to assemble data indicating that such fields pose a significant cancer risk under certain circumstances. Data have been obtained on fields associated with power lines on the one hand and consumer products on the other. Although not conclusive, the data are sufficient to warrant carefully designed research into the risks posed by electromagnetic fields. Because the scientific issues require research, there is a need to make basic social value decisions that will determine which technologies will be developed and which ones may be set aside because of their danger at the present time.

  1. Recent Accomplishments in Laser-Photovoltaic Wireless Power Transmission (United States)

    Fikes, John C.; Henley, Mark W.; Mankins, John C.; Howell, Joe T.; Fork, Richard L.; Cole, Spencer T.; Skinner, Mark


    Wireless power transmission can be accomplished over long distances using laser power sources and photovoltaic receivers. Recent research at AMOS has improved our understanding of the use of this technology for practical applications. Research by NASA, Boeing, the University of Alabama-Huntsville, the University of Colorado, Harvey Mudd College, and the Naval Postgraduate School has tested various commercial lasers and photovoltaic receiver configurations. Lasers used in testing have included gaseous argon and krypton, solid-state diodes, and fiber optic sources, at wavelengths ranging from the visible to the near infra-red. A variety of Silicon and Gallium Arsenide photovoltaic have been tested with these sources. Safe operating procedures have been established, and initial tests have been conducted in the open air at AMOS facilities. This research is progressing toward longer distance ground demonstrations of the technology and practical near-term space demonstrations.

  2. CMOS compatible route for GaAs based large scale flexible and transparent electronics

    KAUST Repository

    Nour, Maha A.


    Flexible electronics using gallium arsenide (GaAs) for nano-electronics with high electron mobility and optoelectronics with direct band gap are attractive for many applications. Here we describe a state-of-the-art CMOS compatible batch fabrication process of transforming traditional electronic circuitry into large-area flexible, semitransparent platform. We show a simple release process for peeling off 200 nm of GaAs from 200 nm GaAs/300 nm AlAs stack on GaAs substrate using diluted hydrofluoric acid (HF). This process enables releasing a single top layer compared to peeling off all layers with small sizes at the same time. This is done utilizing a network of release holes which contributes to the better transparency (45 % at 724 nm wavelength) observed.

  3. The Unexpected Influence of Precursor Conversion Rate in the Synthesis of III-V Quantum Dots. (United States)

    Franke, Daniel; Harris, Daniel K; Xie, Lisi; Jensen, Klavs F; Bawendi, Moungi G


    Control of quantum dot (QD) precursor chemistry has been expected to help improve the size control and uniformity of III-V QDs such as indium phosphide and indium arsenide. Indeed, experimental results for other QD systems are consistent with the theoretical prediction that the rate of precursor conversion is an important factor controlling QD size and size distribution. We synthesized and characterized the reactivity of a variety of group-V precursors in order to determine if precursor chemistry could be used to improve the quality of III-V QDs. Despite slowing down precursor conversion rate by multiple orders of magnitude, the less reactive precursors do not yield the expected increase in size and improvement in size distribution. This result disproves the widely accepted explanation for the shortcoming of current III-V QD syntheses and points to the need for a new generalizable theoretical picture for the mechanism of QD formation and growth.

  4. Temperature mapping of operating nanoscale devices by scanning probe thermometry (United States)

    Menges, Fabian; Mensch, Philipp; Schmid, Heinz; Riel, Heike; Stemmer, Andreas; Gotsmann, Bernd


    Imaging temperature fields at the nanoscale is a central challenge in various areas of science and technology. Nanoscopic hotspots, such as those observed in integrated circuits or plasmonic nanostructures, can be used to modify the local properties of matter, govern physical processes, activate chemical reactions and trigger biological mechanisms in living organisms. The development of high-resolution thermometry techniques is essential for understanding local thermal non-equilibrium processes during the operation of numerous nanoscale devices. Here we present a technique to map temperature fields using a scanning thermal microscope. Our method permits the elimination of tip-sample contact-related artefacts, a major hurdle that so far has limited the use of scanning probe microscopy for nanoscale thermometry. We map local Peltier effects at the metal-semiconductor contacts to an indium arsenide nanowire and self-heating of a metal interconnect with 7 mK and sub-10 nm spatial temperature resolution.

  5. Energy-filtered electron-diffracted beam holography

    Energy Technology Data Exchange (ETDEWEB)

    Herring, R.A. [Center for Advanced Materials and Related Technology, Department of Mechanical Engineering, University of Victoria, P.O. Box. 3055, STN CSC, Victoria, BC, V8N 4T6 (Canada)]. E-mail:


    A method of energy-filtered electron holography is described where any two electron-diffracted beams can be interfered using an electron biprism. A Gatan image filter is used to select the energy loss of the electrons produced in the holograms. Gallium arsenide is used as the TEM specimen. This method of microscopy confirms that fringes extending beyond a limiting aperture were due to inelastically scattered electrons and specifically electrons scattered from the bulk plasmon. The degree of coherence of the zero-loss and energy-loss electrons were high and measured to be {approx}0.3, which was maintained even for the high energy-loss electrons up to 100 eV. Future systematic studies using this method should help understand the Stobbs factor and contribute to the development of quantitative high-resolution electron microscopy.

  6. Energy-filtered electron-diffracted beam holography. (United States)

    Herring, R A


    A method of energy-filtered electron holography is described where any two electron-diffracted beams can be interfered using an electron biprism. A Gatan image filter is used to select the energy loss of the electrons produced in the holograms. Gallium arsenide is used as the TEM specimen. This method of microscopy confirms that fringes extending beyond a limiting aperture were due to inelastically scattered electrons and specifically electrons scattered from the bulk plasmon. The degree of coherence of the zero-loss and energy-loss electrons were high and measured to be approximately 0.3, which was maintained even for the high energy-loss electrons up to 100 eV. Future systematic studies using this method should help understand the Stobbs factor and contribute to the development of quantitative high-resolution electron microscopy.

  7. Low-energy laser treatment of rheumatic diseases: a long-term study (United States)

    Antipa, Ciprian; Moldoveanu, Vladimir; Rusca, Nicolae; Bruckner, Ion I.; Podoleanu, Adrian Gh.; Stanciulescu, Viorica


    We tried to establish the efficiency of low energy (power) lasers (LEL), in various inflammatory and noninflammatory rheumatic diseases during five years. We treated 514 patients with osteoarthrosis, 326 patients with nonarticular rheumatism and 82 patients with inflammatory rheumatism, in four different ways: only with Galium-Aluminum-Arsenide (GaAs) infrared lasers; both GaAs lasers and Helium neon (HeNe) lasers; with placebo laser; with classical anti-inflammatory therapy. The results were analyzed using local objective improvements and the score obtained from a pain scale before and after the treatments. We also note some preliminary results obtained by the computer analysis of the evocated potentials after laser irradiation. We conclude that LEL (especially HeNe with GaAs) is obviously more efficient than placebo laser therapy and also had better or at least similar results, in most of the cases, than classical anti-inflammatory therapy.

  8. Shot noise suppression in p-n junctions due to carrier generation-recombination (United States)

    Maione, I. A.; Pellegrini, B.; Fiori, G.; Macucci, M.; Guidi, L.; Basso, G.


    We present a theoretical and experimental investigation of shot noise suppression in gallium arsenide and silicon p-n junctions due the to effect of generation-recombination phenomena. In particular, the availability of the cross-correlation technique and of ultra-low-noise amplifiers has allowed us to significantly extend, down to 10 pA, the range of bias current values for which results were available in the literature. To provide a quantitative understanding of the observed V-shape noise behavior, we have extended the Shockley-Read-Hall model for the trap-assisted generation-recombination mechanism. Such a model has represented the theoretical background for the performed Monte Carlo noise simulations, which have provided good agreement with the experimental results.

  9. Semiconductor plasmonic gas sensor using on-chip infrared spectroscopy (United States)

    Elsayed, Mohamed Y.; Ismail, Yehea; Swillam, Mohamed A.


    In this paper, we take a novel approach in on-chip optical sensing of gases. Gases have conventionally been optically sensed using refractive index, which is a non-ideal method because of the difficulty in differentiating gases with very similar refractive indices. Infrared (IR) absorption spectra on the other hand have characteristic peaks in the fingerprint region that allow identifying the analyte. Highly doped n-type Indium Arsenide was used to design a plasmonic slot waveguide, and a dispersion analysis was carried out using the finite element method to study the effect of dopant concentration and waveguide geometry on the guided modes. Finite-difference time domain was used to simulate the transmission spectrum of the waveguide with air, methane and octane and the characteristic peaks in the IR spectra showed up strongly. This is a promising versatile method that can sense any IR-active gas.

  10. Increasing the effective aperture of a detector and enlarging the receiving field of view in a 3D imaging lidar system through hexagonal prism beam splitting. (United States)

    Lee, Xiaobao; Wang, Xiaoyi; Cui, Tianxiang; Wang, Chunhui; Li, Yunxi; Li, Hailong; Wang, Qi


    The detector in a highly accurate and high-definition scanning 3D imaging lidar system requires high frequency bandwidth and sufficient photosensitive area. To solve the problem of small photosensitive area of an existing indium gallium arsenide detector with a certain frequency bandwidth, this study proposes a method for increasing the receiving field of view (FOV) and enlarging the effective photosensitive aperture of such detector through hexagonal prism beam splitting. The principle and construction of hexagonal prism beam splitting is also discussed in this research. Accordingly, a receiving optical system with two hexagonal prisms is provided and the splitting beam effect of the simulation experiment is analyzed. Using this novel method, the receiving optical system's FOV can be improved effectively up to ±5°, and the effective photosensitive aperture of the detector is increased from 0.5 mm to 1.5 mm.

  11. Impact of substrate characteristics on performance of large area plasmonic photoconductive emitters. (United States)

    Yardimci, Nezih T; Salas, Rodolfo; Krivoy, Erica M; Nair, Hari P; Bank, Seth R; Jarrahi, Mona


    We present a comprehensive analysis of terahertz radiation from large area plasmonic photoconductive emitters in relation with characteristics of device substrate. Specifically, we investigate the radiation properties of large area plasmonic photoconductive emitters fabricated on GaAs substrates that exhibit short carrier lifetimes through low-temperature substrate growth and through epitaxially embedded rare-earth arsenide (ErAs and LuAs) nanoparticles in superlattice structures. Our analysis indicates that the utilized substrate composition and growth process for achieving short carrier lifetimes are crucial in determining substrate resistivity, carrier drift velocity, and carrier lifetime, which directly impact optical-to-terahertz conversion efficiency, radiation power, radiation bandwidth, and reliability of large area plasmonic photoconductive emitters.

  12. An anti CuO2-type metal hydride square net structure in Ln2M2As2H(x) (Ln=La or Sm, M=Ti, V, Cr, or Mn). (United States)

    Mizoguchi, Hiroshi; Park, SangWon; Hiraka, Haruhiro; Ikeda, Kazutaka; Otomo, Toshiya; Hosono, Hideo


    Using a high pressure technique and the strong donating nature of H(-), a new series of tetragonal La2Fe2Se2O3-type layered mixed-anion arsenides, Ln2M2As2H(x), was synthesized (Ln=La or Sm, M=Ti, V, Cr, or Mn; x≈3). In these compounds, an unusual M2H square net, which has anti CuO2 square net structures accompanying two As(3-) ions, is sandwiched by (LaH)2 fluorite layers. Notably, strong metal-metal bonding with a distance of 2.80 Å was confirmed in La2Ti2As2H2.3, which has metallic properties. In fact, these compounds are situated near the boundary between salt-like ionic hydrides and transition-metal hydrides with metallic characters.

  13. A simple model of space radiation damage in GaAs solar cells (United States)

    Wilson, J. W.; Stith, J. J.; Stock, L. V.


    A simple model is derived for the radiation damage of shallow junction gallium arsenide (GaAs) solar cells. Reasonable agreement is found between the model and specific experimental studies of radiation effects with electron and proton beams. In particular, the extreme sensitivity of the cell to protons stopping near the cell junction is predicted by the model. The equivalent fluence concept is of questionable validity for monoenergetic proton beams. Angular factors are quite important in establishing the cell sensitivity to incident particle types and energies. A fluence of isotropic incidence 1 MeV electrons (assuming infinite backing) is equivalent to four times the fluence of normal incidence 1 MeV electrons. Spectral factors common to the space radiations are considered, and cover glass thickness required to minimize the initial damage for a typical cell configuration is calculated. Rough equivalence between the geosynchronous environment and an equivalent 1 MeV electron fluence (normal incidence) is established.

  14. Arsenic-Microbe-Mineral Interactions in Mining-Affected Environments

    Directory of Open Access Journals (Sweden)

    Karen A. Hudson-Edwards


    Full Text Available The toxic element arsenic (As occurs widely in solid and liquid mine wastes. Aqueous forms of arsenic are taken up in As-bearing sulfides, arsenides, sulfosalts, oxides, oxyhydroxides, Fe-oxides, -hydroxides, -oxyhydroxides and -sulfates, and Fe-, Ca-Fe- and other arsenates. Although a considerable body of research has demonstrated that microbes play a significant role in the precipitation and dissolution of these As-bearing minerals, and in the alteration of the redox state of As, in natural and simulated mining environments, the molecular-scale mechanisms of these interactions are still not well understood. Further research is required using traditional and novel mineralogical, spectroscopic and microbiological techniques to further advance this field, and to help design remediation schemes.

  15. Development and commercialization of mode-locked VECSELs (United States)

    Hempler, Nils; Bialkowski, Bartlomiej; Hamilton, Craig J.; Maker, Gareth T.; Malcolm, Graeme P. A.


    This paper will describe the current state-of-the-art in commercial mode-locked Vertical External Cavity Surface Emitting Lasers (VECSEL) and demonstrate their efficacy in key applications. Based on indium gallium arsenide quantum well gain structures, our systems operate between 920 nm - 1050 nm with >1 W output powers, 200 MHz pulse repetition rate and duration. Crucially, the development issues that have been overcome to bring this promising technology to market will be discussed. These include: thermal management challenges, electronic control system development and robust mechanical design requirements. Having the potential to replace more conventional titanium sapphire laser technology where wavelength flexibility can be traded off against a significantly lower cost point and form factor, we will discuss the use of VECSELs in key applications such as nonlinear microscopy.

  16. Assessment of the effectiveness of low-level laser therapy on the hands of patients with rheumatoid arthritis: a randomized double-blind controlled trial. (United States)

    Meireles, Sandra Mara; Jones, Anamaria; Jennings, Fabio; Suda, Alina Lica; Parizotto, Nivaldo Antônio; Natour, Jamil


    Assess the effectiveness of low-level laser therapy on pain reduction and improvement in function in the hands of patients with rheumatoid arthritis. A randomized double-blind controlled trial was carried out on 82 patients with rheumatoid arthritis. The experimental group was submitted to the application of laser therapy, whereas the control group received a placebo laser. Aluminum gallium arsenide laser was used, at a wavelength of 785 nm, dose of 3 J/cm(2) and mean power of 70 mW. The groups were homogenous at the beginning of the study with regard to the main variables (p > 0.05). There were no statistically significant differences between groups in most of the measurements taken at the end of the intervention including the primary variables; the following variables were the exceptions: favoring the experimental group-inflammation of the interphalangeal joint of the right thumb (p = 0.012) and perimetry of the interphalangeal joint of the left thumb (p = 0.013); and favoring the control group-flexion of the proximal interphalangeal joint of the right fifth finger (p = 0.021), perimetry of the third proximal interphalangeal joint of the right hand (p = 0.044), grip strength in the left hand (p = 0.010), and the work domain of the Disabilities of the Arm, Shoulder and Hand (DASH) questionnaire (p = 0.010). We conclude that low-level aluminum gallium arsenide laser therapy is not effective at the wavelength, dosage, and power studied for the treatment of hands among patients with rheumatoid arthritis.

  17. Arsenic (III, V), indium (III), and gallium (III) toxicity to zebrafish embryos using a high-throughput multi-endpoint in vivo developmental and behavioral assay. (United States)

    Olivares, Christopher I; Field, Jim A; Simonich, Michael; Tanguay, Robert L; Sierra-Alvarez, Reyes


    Gallium arsenide (GaAs), indium gallium arsenide (InGaAs) and other III/V materials are finding increasing application in microelectronic components. The rising demand for III/V-based products is leading to increasing generation of effluents containing ionic species of gallium, indium, and arsenic. The ecotoxicological hazard potential of these streams is unknown. While the toxicology of arsenic is comprehensive, much less is known about the effects of In(III) and Ga(III). The embryonic zebrafish was evaluated for mortality, developmental abnormalities, and photomotor response (PMR) behavior changes associated with exposure to As(III), As(V), Ga(III), and In(III). The As(III) lowest observable effect level (LOEL) for mortality was 500 μM at 24 and 120 h post fertilization (hpf). As(V) exposure was associated with significant mortality at 63 μM. The Ga(III)-citrate LOEL was 113 μM at 24 and 120 hpf. There was no association of significant mortality over the tested range of In(III)-citrate (56-900 μM) or sodium citrate (213-3400 μM) exposures. Only As(V) resulted in significant developmental abnormalities with LOEL of 500 μM. Removal of the chorion prior to As(III) and As(V) exposure was associated with increased incidence of mortality and developmental abnormality suggesting that the chorion may normally attenuate mass uptake of these metals by the embryo. Finally, As(III), As(V), and In(III) caused PMR hypoactivity (49-69% of control PMR) at 900-1000 μM. Overall, our results represent the first characterization of multidimensional toxicity effects of III/V ions in zebrafish embryos helping to fill a significant knowledge gap, particularly in Ga(III) and In(III) toxicology.

  18. Superconducting properties and pseudogap from preformed Cooper pairs in the triclinic (CaFe1-xPtxAs ) 10Pt3As8 (United States)

    Surmach, M. A.; Brückner, F.; Kamusella, S.; Sarkar, R.; Portnichenko, P. Y.; Park, J. T.; Ghambashidze, G.; Luetkens, H.; Biswas, P. K.; Choi, W. J.; Seo, Y. I.; Kwon, Y. S.; Klauss, H.-H.; Inosov, D. S.


    Using a combination of muon-spin relaxation (μ SR ) , inelastic neutron scattering (INS), and nuclear magnetic resonance (NMR), we investigated the novel iron-based superconductor with a triclinic crystal structure (CaFe1-xPtxAs ) 10Pt3As8 (Tc=13 K), containing platinum-arsenide intermediary layers. The temperature dependence of the superfluid density obtained from the μ SR relaxation-rate measurements indicates the presence of two superconducting gaps, Δ1≫Δ2 . According to our INS measurements, commensurate spin fluctuations are centered at the (π ,0 ) wave vector, like in most other iron arsenides. Their intensity remains unchanged across Tc, indicating the absence of a spin resonance typical for many Fe-based superconductors. Instead, we observed a peak in the spin-excitation spectrum around ℏ ω0=7 meV at the same wave vector, which persists above Tc and is characterized by the ratio ℏ ω0/kBTc≈6.2 , which is significantly higher than typical values for the magnetic resonant modes in iron pnictides (˜4.3 ) . The temperature dependence of magnetic intensity at 7 meV revealed an anomaly around T*=45 K related to the disappearance of this new mode. A suppression of the spin-lattice relaxation rate, 1 /T1T , observed by NMR immediately below T* without any notable subsequent anomaly at Tc, indicates that T* could mark the onset of a pseudogap in (CaFe1-xPtxAs ) 10Pt3As8 , which is likely associated with the emergence of preformed Cooper pairs.

  19. (CaFeAs){sub 10}Pt{sub z}As{sub 8} superconductors and related compounds

    Energy Technology Data Exchange (ETDEWEB)

    Stuerzer, Tobias


    The main topic of this dissertation is the identification of new compounds, structure determination, and substitution dependent investigation of properties in this new branch of the family of iron arsenide superconductors (Chapter 2). Chapter 2.1 presents the identification of the superconducting compounds and the corresponding structure elucidation identifying two dif-ferent species (CaFeAs){sub 10}Pt{sub 3}As{sub 8} and (CaFeAs){sub 10}Pt{sub 4}As{sub 8} in this family (abbreviated as 1038 and 1048 according to their stoichiometry). However, a closer look revealed a more challenging structure chemistry which is covered in Chapter 2.2. The following two Chapters 2.3 and 2.4 are devoted to (CaFeAs){sub 10}Pt{sub 3}As{sub 8} and more detailed investigations on this parent compound of the new superconductor family. Furthermore, transition metal substitution series (CaFe{sub 1-x}M{sub x}As){sub 10}Pt{sub 3}As{sub 8} were synthesized to investigate the resemblance to model systems Ba(Fe{sub 1-x}M{sub x}){sub 2}As{sub x} and LaO(Fe{sub 1-x}M{sub x})As in the scope of structural changes and superconductivity as described in Chapter 2.5. Initially amazing differences in superconducting properties com-paring 1038 and 1048 compounds are analyzed in Chapter 2.6 establishing an universal dop-ing model in the (CaFe{sub 1-x}M{sub x}As){sub 10}Pt{sub z}As{sub 8} family. Additionally substituent dependent properties upon rare earth substitution in electron doped (Ca{sub 1-y}RE{sub y}FeAs){sub 10}Pt{sub 3}As{sub 8} are investigated in Chapter 2.7, while a detailed study of superconducting properties and magnetism in (Ca{sub 1-y}La{sub y}FeAs){sub 10}Pt{sub 3}As{sub 8} by the local μSR technique is presented in Chapter 2.8. In Chapter 2.9 a comparison of direct and electron doping is discussed based on codoping experiments in (Ca{sub 1-y}La{sub y}Fe{sub 1-x}Pt{sub x}As){sub 10}Pt{sub 3}As{sub 8} and (CaFe{sub 1-x}Pt{sub x}As){sub 10}Pt{sub 4}As{sub 8}. Finally, in Chapter 2

  20. A natural analogue for copper waste canisters: The copper-uranium mineralised concretions in the Permian mudrocks of south Devon, United Kingdom

    Energy Technology Data Exchange (ETDEWEB)

    Milodowski, A.E.; Styles, M.T.; Hards, V.L. [Natural Environment Research Council (United Kingdom). British Geological Survey


    mineralisation and alteration that can be related to the burial and diagenetic history of the Permian strata. The native copper mineralisation exhibits close temporal association with the formation of uraniferous and vanadiferous concretions (known as 'fish-eyes') in the same rocks. Petrographical relationships indicate that both the copper and the 'fish-eye' concretions formed during burial diagenesis but before the maximum compaction of the host mudstone and siltstone. The regional burial history Wessex Basin, indicates that the maximum compaction of the Permian strata would have been achieved by at least the end of the Lower Jurassic (possibly even in the Triassic). Therefore, the native copper mineralisation is older than 176 Ma. The native copper sheets display a complex sequence of alteration and subsequent mineral growth of minerals on their surfaces. The earliest alteration was to copper oxides - principally cuprite with minor tenorite, indicating a change to more oxidising groundwater conditions. The dissolution of native silver and the growth of fringes of copper arsenides followed this. Nickel arsenides and chalcocite, associated with the precipitation of uranium silicates occurred in the later stages of alteration. This suggests a return to a more reducing pore water environment. Again, petrographical relationships indicate that this alteration and subsequent mineralisation is geologically old (i.e. Lower Jurassic or older). Secondary malachite, intimately intergrown copper sulphate and copper oxides, copper chloride, copper-uranium arsenate and uranium vanadates have formed as late-stage alteration products of the native copper and earlier diagenetic cuprite, chalcocite, copper-nickel arsenide and uranium silicate alteration and mineralisation. This latest stage alteration is most probably attributable to near-surface weathering processes. Although the native copper is affected by corrosion, the study has shown that a significant proportion (30

  1. Experiments and Computational Theory for Electrical Breakdown in Critical Components: THz Imaging of Electronic Plasmas.

    Energy Technology Data Exchange (ETDEWEB)

    Zutavern, Fred J. [Sandia National Lab. (SNL-NM), Albuquerque, NM (United States); Hjalmarson, Harold P. [Sandia National Lab. (SNL-NM), Albuquerque, NM (United States); Bigman, Verle Howard [Sandia National Lab. (SNL-NM), Albuquerque, NM (United States); Gallegos, Richard Joseph [Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)


    This report describes the development of ultra-short pulse laser (USPL) induced terahertz (THz) radiation to image electronic plasmas during electrical breakdown. The technique uses three pulses from two USPLs to (1) trigger the breakdown, (2) create a 2 picosecond (ps, 10 -12 s), THz pulse to illuminate the breakdown, and (3) record the THz image of the breakdown. During this three year internal research program, sub-picosecond jitter timing for the lasers, THz generation, high bandwidth (BW) diagnostics, and THz image acquisition was demonstrated. High intensity THz radiation was optically-induced in a pulse-charged gallium arsenide photoconductive switch. The radiation was collected, transported, concentrated, and co-propagated through an electro-optic crystal with an 800 nm USPL pulse whose polarization was rotated due to the spatially varying electric field of the THz image. The polarization modulated USPL pulse was then passed through a polarizer and the resulting spatially varying intensity was detected in a high resolution digital camera. Single shot images had a signal to noise of %7E3:1. Signal to noise was improved to %7E30:1 with several experimental techniques and by averaging the THz images from %7E4000 laser pulses internally and externally with the camera and the acquisition system (40 pulses per readout). THz shadows of metallic films and objects were also recorded with this system to demonstrate free-carrier absorption of the THz radiation and improve image contrast and resolution. These 2 ps THz pulses were created and resolved with 100 femtosecond (fs, 10 -15 s) long USPL pulses. Thus this technology has the capability to time-resolve extremely fast repetitive or single shot phenomena, such as those that occur during the initiation of electrical breakdown. The goal of imaging electrical breakdown was not reached during this three year project. However, plans to achieve this goal as part of a follow-on project are described in this document

  2. Fabrication and characterization of semiconductor ion traps for quantum information processing (United States)

    Stick, Daniel Lynn

    The electromagnetic manipulation of isolated ions has led to many advances in atomic physics, from laser cooling to precision metrology and quantum control. As technical capability in this area has grown, so has interest in building miniature electromagnetic traps for the development of large-scale quantum information processors. This thesis will primarily focus on using microfabrication techniques to build arrays of miniature ion traps, similar to techniques used in fabricating high component density microprocessors. A specific focus will be on research using a gallium arsenide/aluminum gallium arsenide heterostructure as a trap architecture, as well as the recent testing of different ion traps fabricated at outside foundries. The construction and characterization of a conventional ceramic trap capable of shuttling an ion through a junction will also be detailed, and reveal the need for moving towards lithographically fabricated traps. Combined, these serve as a set of proof-of-principle experiments pointing to methods for designing and building large scale arrays of ion traps capable of constituting a quantum information processor. As traps become smaller, electrical potentials on the electrodes have greater influence on the ion. This not only pertains to intentionally applied voltages, but also to deleterious noise sources, such as thermal Johnson noise and the more significant "patch potential" noise, which both cause motional heating of the ion. These problematic noise sources dovetail with my thesis research into trap miniaturization since their effects become more pronounced and impossible to ignore for small trap sizes. Therefore characterizing them and investigating ways to suppress them have become an important component of my research. I will describe an experiment using a pair of movable needle electrodes to measure the ion heating rate corresponding to the harmonic frequency of the trap, the ion-electrode distance, and the electrode temperature. This

  3. Crystal growth of compound semiconductors in a low-gravity environment (InGaAs crystals) (M-22) (United States)

    Tatsumi, Masami


    Compound semiconductor crystals, such as gallium arsenide and indium phosphide crystals, have many interesting properties that silicon crystals lack, and they are expected to be used as materials for optic and/or electro-optic integrated devices. Generally speaking, alloy semiconductors, which consist of more than three elements, demonstrate new functions. For example, values of important parameters, such as lattice constant and emission wavelength, can be chosen independently. However, as it is easy for macroscopic and/or microscopic fluctuations of composition to occur in alloy semiconductor crystals, it is difficult to obtain crystals having homogeneous properties. Macroscopic change of composition in a crystal is caused by the segregation phenomenon. This phenomenon is due to a continuous change in the concentration of constituent elements at the solid-liquid interfacing during solidification. On Earth, attempts were made to obtain a crystal with homogeneous composition by maintaining a constant melt composition near the solid-liquid interface, through suppression of the convection flow of the melt by applying a magnetic field. However, the attempt was not completely successful. Convective flow does not occur in microgravity because the gravity in space is from four to six orders of magnitude less than that on Earth. In such a case, mass transfer in the melt is dominated by the diffusion phenomenon. So, if crystal growth is carried out at a rate that is higher than the rate of mass transfer due to this phenomenon, it is expected that crystals having a homogeneous composition will be obtained. In addition, it is also possible that microscopic composition fluctuations (striation) may disappear because microscopic fluctuations diminish in the absence of convection. We are going to grow a bulk-indium gallium arsenide (InGaAs) crystal using the gradient heating furnace (GHF) in the first material processing test (FMPT). The structure of the sample is shown where In

  4. Time-resolved X-ray diffraction with accelerator- and laser-plasma-based X-ray sources

    Energy Technology Data Exchange (ETDEWEB)

    Nicoul, Matthieu


    Femtosecond X-ray pulses are a powerful tool to investigate atomic motions triggered by femtosecond pump pulses. This thesis is dedicated to the production of such pulses and their use in optical pump - X-ray probe measurement. This thesis describes the laser-plasma-based sources available at the University of Duisburg-Essen. Part of it consists of the description of the design, built-up and characterization of a new ''modular'' X-ray source dedicated to optimize the X-ray flux onto the sample under investigation. The acoustic wave generation in femtosecond optically excited semiconductor (gallium arsenide) and metal (gold) was performed using the sources of the University of Duisburg-Essen. The physical answer of the material was modeled by a simple strain model for the semiconductor, pressure model for the metal, in order to gain information on the interplay of the electronic and thermal pressures rising after excitation. Whereas no reliable information could be obtain in gallium arsenide (principally due to the use of a bulk), the model for gold achieved very good agreement, providing useful information. The relaxation time of the electron to lattice energy was found to be (5.0{+-}0.3) ps, and the ratio of the Grueneisen parameters was found to be {gamma}{sub e} / {gamma}{sub i} = (0.5{+-}0.1). This thesis also describes the Sub-Picosecond Pulse Source (SPPS) which existed at the (formally) Stanford Linear Accelerator Center, an accelerator-based X-ray source, and two measurements performed with it. The first one is the detailed investigation of the phonon softening of the A{sub 1g} mode launch in bismuth upon fluence excitation. Detailed information concerning the new equilibrium position and phonon frequency were obtained over extended laser pump fluences. The second measurement concerned the study of the liquid phase dynamics in a newly formed liquid phase following ultrafast melting in indium antimonide. The formation of the liquid phase

  5. Transition-metal dopants in tetrahedrally bonded semiconductors: Symmetry and exchange interactions from tight-binding models (United States)

    Kortan, Victoria Ramaker

    It has become increasingly apparent that the future of electronic devices can and will rely on the functionality provided by single or few dopant atoms. The most scalable physical system for quantum technologies, i.e. sensing, communication and computation, are spins in crystal lattices. Diamond is an excellent host crystal offering long room temperature spin coherence times and there has been exceptional experimental work done with the nitrogen vacancy center in diamond demonstrating many forms of spin control. Transition metal dopants have additional advantages, large spin-orbit interaction and internal core levels, that are not present in the nitrogen vacancy center. This work explores the implications of the internal degrees of freedom associated with the core d levels using a tight-binding model and the Koster-Slater technique. The core d levels split into two separate symmetry states in tetrahedral bonding environments and result in two levels with different wavefunction spatial extents. For 4 d semiconductors, e.g. GaAs, this is reproduced in the tight-binding model by adding a set of d orbitals on the location of the transition metal impurity and modifying the hopping parameters from impurity to its nearest neighbors. This model does not work in the case of 3d semiconductors, e.g. diamond, where there is no physical reason to drastically alter the hopping from 3 d dopant to host and the difference in wavefunction extent is not as pronounced. In the case of iron dopants in gallium arsenide the split symmetry levels in the band gap are responsible for a decrease in tunneling current when measured with a scanning tunneling microscope due to interference between two elastic tunneling paths and comparison between wavefunction measurements and tight-binding calculations provides information regarding material parameters. In the case of transition metal dopants in diamond there is less distinction between the symmetry split d levels. When considering pairs of

  6. Photonic Crystal Microcavities for Quantum Information Science (United States)

    Hagemeier, Jenna Nicole

    Quantum information science and technology is a broad and fascinating field, encompassing diverse research areas such as materials science, atomic physics, superconductors, solid-state physics, and photonics. A goal of this field is to demonstrate the basic functions of information initialization, manipulation, and read-out in systems that take advantage of quantum physics to greatly enhance computing performance capabilities. In a hybrid quantum information network, different systems are used to perform different functions, to best exploit the advantageous properties of each system. For example, matter quantum bits (qubits) can be used for local data storage and manipulation while photonic qubits can be used for long-distance communication between storage points of the network. Our research focuses on the following two solid-state realizations of a matter qubit for the purpose of building such a hybrid quantum network: the electronic spin of a self-assembled indium arsenide quantum dot and the electronic spin of a nitrogen-vacancy defect center in diamond. Light--matter interactions are necessary to transfer the information from the matter qubit to the photonic qubit, and this interaction can be enhanced by embedding the spin system in an optical cavity. We focus on photonic crystal microcavities for this purpose, and we study interactions between the optical cavity modes and incorporated spin systems. To improve the performance of this spin--photon interface, it is important to maximize the coupling strength between the spin and photonic systems and to increase the read-out efficiency of information stored in the cavity. In this thesis, we present our work to deterministically couple a nitrogen-vacancy center in diamond to a photonic crystal microcavity in gallium phosphide. This is achieved by nanopositioning a pre-selected diamond nanocrystal in the intensity maximum of the optical cavity mode. We also present an optimized design of a photonic crystal

  7. Low cost, high concentration ratio solar cell array for space applications (United States)

    Patterson, R. E.; Rauschenbach, H. S.; Cannady, M. D.; Whang, U. S.; Crabtree, W. L.


    A miniaturized Cassegrainian-type concentrator solar array concept for space applications is described. In-orbit cell operating temperatures near 80 C are achieved with purely passive cell cooling and a net concentration ratio of 100. A multiplicity of miniaturized, rigid solar cell concentrator subassemblies are electrically interconnected in conventional fashion and mounted into rigid frames to form concentrator solar panel assemblies approximately 14-mm thick. A plurality of such interconnected panels forms a stowable and deployable solar cell blanket. It is projected that for 20% efficient silicon cells an array of 500 kW beginning-of-life output capability, including orbiter cradle structures, can be transported by a single shuttle orbiter flight into low earth orbit. In-orbit array specific performance is calculated to be approximately 100 W/sq m and 20 W/kg, including all stowage, deployment and array figure control equipment designed for a 30-year orbital life. Higher efficiency gallium arsenide and multiple band gap solar cells will improve these performance factors correspondingly.

  8. Design, performance investigation and delivery of a miniaturized Cassegrainian concentrator solar array (United States)

    Patterson, R. E.


    A miniaturized Cassegrainian concentrator (MCC) solar array concept is being developed with the objective of significantly reducing the recurring cost of multikilowatt solar arrays. The desired cost reduction is obtained as a result of using very small high efficiency solar cells in conjunction with low-cost optics. In the MCC single element concept and panel concept, incident solar radiation is reflected from a primary parabolic reflector to a secondary hyperbolic reflector and finally to a 4-millimetr diameter solar cell. A light catcher cone is used to improve off-axis performance. An element is approximately 13-millimeters thick which permits efficient launch stowage of the concentrator system panels without complex optical component deployments or retractions. The MCC elements are packed in bays within graphite epoxy frames and are electrically connected into appropriate series-parallel circuits. A MCC single element with a 21 sq cm entrance aperture and a 20 percent efficient, 0.25 sq cm gallium arsenide solar cell has the same power output as 30-sq cm of 11-percent efficiency (at 68 C) silicon solar cells. The MCC concept provides the potential for a significant reduction in array cost due to a 99 percent reduction in required cell area and a 30 percent reduction in array area relative to planar array of equivalent power.

  9. Superconductivity up to 30 K in the vicinity of the quantum critical point in BaFe{sub 2}(As{sub 1-x}P{sub x}){sub 2}

    Energy Technology Data Exchange (ETDEWEB)

    Jiang Shuai; Xing Hui; Xuan Guofang; Wang Cao; Ren Zhi; Dai Jianhui; Xu Zhu' an; Cao Guanghan [Department of Physics, Zhejiang University, Hangzhou 310027 (China); Feng, Chunmu, E-mail: [Test and Analysis Center, Zhejiang University, Hangzhou 310027 (China)


    We report bulk superconductivity induced by an isovalent doping of phosphorus in BaFe{sub 2}(As{sub 1-x}P{sub x}){sub 2}. The P-for-As substitution results in shrinkage of the lattice, especially for the FeAs block layers. The resistivity anomaly associated with the spin-density-wave (SDW) transition in the undoped compound is gradually suppressed by the P doping. Superconductivity with a maximum T{sub c} of 30 K emerges at x = 0.32, coinciding with a magnetic quantum critical point (QCP) which is shown by the disappearance of SDW order and the linear temperature-dependent resistivity in the normal state. The T{sub c} values were found to decrease with further P doping and no superconductivity was observed down to 2 K for x>=0.77. The appearance of superconductivity in the vicinity of QCP hints at the superconductivity mechanism in iron-based arsenides. (fast track communication)

  10. Environmental assessment for the satellite power system concept development and evaluation program: atmospheric effects

    Energy Technology Data Exchange (ETDEWEB)

    Rote, D.M.; Brubaker, K.L.; Lee, J.L.


    The US Department of Energy (DOE) has undertaken a preliminary, three-year program to investigate the impacts of the construction and operation of a satellite power system, of unprecedented scale. The Department of Energy's program, titled The Concept Development and Evaluation Program, focused its investigations on a Reference System description that calls for the use of either silicon (Si) or gallium aluminum-arsenide (GaAlAs) photovoltaic cells on 60 satellites to be constructed in GEO over a 30-yr period. Rectennas would be constructed on the ground to receive microwave energy from the satellites. Each satellite-rectenna pair is designed to produce 5 GW of power on an essentially continuous basis for use as a baseload power source for an electric power distribution system. The environmental assessment part of the program was divided into five interdependent task areas. The present document constitutes the final technical report on one of the five task areas, the Assessment of the Atmospheric Effects, and as such presents an in-depth summary of work performed during the assessment program. The issues associated with SPS activities in the troposphere are examined. These include tropospheric weather modification related to rectenna operations and rocket launches, and air quality impacts related to rocketlaunch ground clouds. Then progressing upward through the various levels of the atmosphere, the principal middle and upper atmospheric effects associated with rocket effluents are analyzed. Finally, all of the potential SPS atmospheric effects are summarized.

  11. Amplifier based broadband pixel for sub-millimeter wave imaging (United States)

    Sarkozy, Stephen; Drewes, Jonathan; Leong, Kevin M. K. H.; Lai, Richard; Mei, X. B. (Gerry); Yoshida, Wayne; Lange, Michael D.; Lee, Jane; Deal, William R.


    Broadband sub-millimeter wave technology has received significant attention for potential applications in security, medical, and military imaging. Despite theoretical advantages of reduced size, weight, and power compared to current millimeter wave systems, sub-millimeter wave systems have been hampered by a fundamental lack of amplification with sufficient gain and noise figure properties. We report a broadband pixel operating from 300 to 340 GHz, biased off a single 2 V power supply. Over this frequency range, the amplifiers provide > 40 dB gain and mobility transistor technology, based on a sub-50 nm gate and indium arsenide composite channel with a projected maximum oscillation frequency fmax>1.0 THz. The first sub-millimeter wave-based images using active amplification are demonstrated as part of the Joint Improvised Explosive Device Defeat Organization Longe Range Personnel Imager Program. This development and demonstration may bring to life future sub-millimeter-wave and THz applications such as solutions to brownout problems, ultra-high bandwidth satellite communication cross-links, and future planetary exploration missions.

  12. Estimates of occupational safety and health impacts resulting from large-scale production of major photovoltaic technologies

    Energy Technology Data Exchange (ETDEWEB)

    Owens, T.; Ungers, L.; Briggs, T.


    The purpose of this study is to estimate both quantitatively and qualitatively, the worker and societal risks attributable to four photovoltaic cell (solar cell) production processes. Quantitative risk values were determined by use of statistics from the California semiconductor industry. The qualitative risk assessment was performed using a variety of both governmental and private sources of data. The occupational health statistics derived from the semiconductor industry were used to predict injury and fatality levels associated with photovoltaic cell manufacturing. The use of these statistics to characterize the two silicon processes described herein is defensible from the standpoint that many of the same process steps and materials are used in both the semiconductor and photovoltaic industries. These health statistics are less applicable to the gallium arsenide and cadmium sulfide manufacturing processes, primarily because of differences in the materials utilized. Although such differences tend to discourage any absolute comparisons among the four photovoltaic cell production processes, certain relative comparisons are warranted. To facilitate a risk comparison of the four processes, the number and severity of process-related chemical hazards were assessed. This qualitative hazard assessment addresses both the relative toxicity and the exposure potential of substances in the workplace. In addition to the worker-related hazards, estimates of process-related emissions and wastes are also provided.

  13. Direct Detection of sub-GeV Dark Matter with Scintillating Targets

    CERN Document Server

    Derenzo, Stephen; Massari, Andrea; Soto, Adrían; Yu, Tien-Tien


    We describe a novel search for MeV-to-GeV-mass dark matter, in which the dark matter scatters off electrons in a scintillating target. The excitation and subsequent de-excitation of the electron produces one or more photons, which could be detected with an array of cryogenic low-noise photodetectors, such as transition edge sensors (TES) or microwave kinetic inductance devices (MKID). Scintillators may have distinct advantages over other experiments searching for a low ionization signal from sub-GeV DM. First, the detection of one or a few photons may be technologically easier. Second, since no electric field is required to detect the photons, there may be far fewer dark counts mimicking a DM signal. We discuss various target choices, but focus on calculating the expected dark matter-electron scattering rates in three scintillating crystals, sodium iodide (NaI), cesium iodide (CsI), and gallium arsenide (GaAs). Among these, GaAs has the lowest band gap (1.52 eV) compared to NaI (5.9 eV) or CsI (6.4 eV), allow...

  14. Searching for Dark Absorption with Direct Detection Experiments

    CERN Document Server

    Bloch, Itay M; Tobioka, Kohsaku; Volansky, Tomer; Yu, Tien-Tien


    We consider the absorption by bound electrons of dark matter in the form of dark photons and axion-like particles, as well as of dark photons from the Sun, in current and next-generation direct detection experiments. Experiments sensitive to electron recoils can detect such particles with masses between a few eV to more than 10 keV. For dark photon dark matter, we update a previous bound based on XENON10 data and derive new bounds based on data from XENON100 and CDMSlite. We find these experiments to disfavor previously allowed parameter space. Moreover, we derive sensitivity projections for SuperCDMS at SNOLAB for silicon and germanium targets, as well as for various possible experiments with scintillating targets (cesium iodide, sodium iodide, and gallium arsenide). The projected sensitivity can probe large new regions of parameter space. For axion-like particles, the same current direction detection data improves on previously known direct-detection constraints but does not bound new parameter space beyond...

  15. Notch filtering the nuclear environment of a spin qubit (United States)

    Malinowski, Filip K.; Martins, Frederico; Nissen, Peter D.; Barnes, Edwin; Cywiński, Łukasz; Rudner, Mark S.; Fallahi, Saeed; Gardner, Geoffrey C.; Manfra, Michael J.; Marcus, Charles M.; Kuemmeth, Ferdinand


    Electron spins in gate-defined quantum dots provide a promising platform for quantum computation. In particular, spin-based quantum computing in gallium arsenide takes advantage of the high quality of semiconducting materials, reliability in fabricating arrays of quantum dots and accurate qubit operations. However, the effective magnetic noise arising from the hyperfine interaction with uncontrolled nuclear spins in the host lattice constitutes a major source of decoherence. Low-frequency nuclear noise, responsible for fast (10 ns) inhomogeneous dephasing, can be removed by echo techniques. High-frequency nuclear noise, recently studied via echo revivals, occurs in narrow-frequency bands related to differences in Larmor precession of the three isotopes 69Ga, 71Ga and 75As (refs 15,16,17). Here, we show that both low- and high-frequency nuclear noise can be filtered by appropriate dynamical decoupling sequences, resulting in a substantial enhancement of spin qubit coherence times. Using nuclear notch filtering, we demonstrate a spin coherence time (T2) of 0.87 ms, five orders of magnitude longer than typical exchange gate times, and exceeding the longest coherence times reported to date in Si/SiGe gate-defined quantum dots.

  16. Photobiomodulation with low-level diode laser promotes osteoblast migration in an in vitro micro wound model (United States)

    Tschon, Matilde; Incerti-Parenti, Serena; Cepollaro, Simona; Checchi, Luigi; Fini, Milena


    Laser photobiomodulation can improve bone healing, but well-defined treatment parameters are lacking. Saos-2 human osteoblast-like cells were subjected to an in vitro scratch-wound healing assay and irradiated by a 915-nm gallium-aluminum-arsenide diode laser for 0, 48, 96, and 144 s using doses of, respectively, 0, 5, 10, and 15 J/cm2. Wound area was measured after 4, 24, 48, and 72 h. Cell viability, DNA content, gene expression, and release of bone-related proteins were evaluated after 24, 48, and 72 h. Laser significantly improved wound healing compared with nonirradiated controls. Cells treated with laser doses of 5 and 10 J/cm2 reached wound closure after 72 h, followed by 15 J/cm2 after 96 h. With the cell proliferation inhibitor Mitomycin C, the doses of 10 and 15 J/cm2 maintained an improved wound healing compared with controls. Laser increased collagen type 1 gene expression with higher doses inducing a longer-lasting effect, whereas transforming growth factor-beta 1 showed comparable or decreased levels in irradiated versus nonirradiated groups, with no effect on protein release. This study demonstrated that laser photobiomodulation at 915 nm promoted wound healing mainly through stimulation of cell migration and collagen deposition by osteoblasts.

  17. Infrared techniques for detecting carbonization at onset of device failure (United States)

    Farr, Norman; Sinofsky, Edward L.


    We describe the design, and development of an infrared detection system which detects the onset of carbonization of fluoropolymers in the presence of up to 60 watts of 1.06 micrometer laser energy. This system is used to shut down a therapeutic laser system before significant damage is done to a laser delivery device and patient. Black body radiation emitting from the diffusion tip is transmitted, backwards, through the same optical fiber as the therapeutic wavelength. Using a high power 1.06 micrometer laser mirror at 45 degrees, most of the 1.06 micrometer light is reflected while the black body radiation is passed to a holographic notch filter which further filters the signal. Still more filtering was needed before the 1.1 to 2 micrometer signal could be detected within the presence the therapeutic light using an extended indium gallium arsenide photodetector. There was still a significant detected offset which increased with laser power which necessitated a means to automatically null the offset for different laser power settings. The system is designed to be used with any unmodified laser system. It interfaces directly to or in series with most common external safety interlocks and can be used with various diffusing tips, probes or bare fibers.

  18. NREL photovoltaic subcontract reports: Abstracts and document control information, 1 August 1992--31 July 1993

    Energy Technology Data Exchange (ETDEWEB)


    This report contains document control information and abstracts for the National Renewable Energy Laboratory (NREL) subcontracted photovoltaic (PV) program publications. It also lists source information on additional publications that describe US Department of Energy (DOE) PV research activities. It is not totally exhaustive, so it lists NREL contacts for requesting further information on the DOE and NREL PV programs. This report covers the period from August 1, 1992, through July 31, 1993. This report is published periodically, with the previous one covering the period from August 1, 1991, through July 31, 1992. The purpose of continuing this type of publication is to help keep people abreast of specific PV interests, while maintaining a balance on the costs to the PV program. The information in this report is organized under PV technology areas: Amorphous Silicon Research; Polycrystalline Thin Films (including copper indium diselenide, cadmium telluride, and thin-film silicon); Crystalline Materials and Advanced Concepts (including silicon, gallium arsenide, and other group III-V materials); PV Manufacturing Technology Development (which may include manufacturing information for various types of PV materials).

  19. Enhanced charge recombination due to surfaces and twin defects in GaAs nanostructures

    Energy Technology Data Exchange (ETDEWEB)

    Brown, Evan; Sheng, Chunyang; Nakano, Aiichiro [Collaboratory for Advanced Computing and Simulations, Department of Physics and Astronomy, Department of Computer Science, Department of Chemical Engineering and Materials Science, University of Southern California, Los Angeles, California 90089-0242 (United States); Shimamura, Kohei; Shimojo, Fuyuki [Collaboratory for Advanced Computing and Simulations, Department of Physics and Astronomy, Department of Computer Science, Department of Chemical Engineering and Materials Science, University of Southern California, Los Angeles, California 90089-0242 (United States); Department of Physics, Kumamoto University, Kumamoto 860-8555 (Japan)


    Power conversion efficiency of gallium arsenide (GaAs) nanowire (NW) solar cells is severely limited by enhanced charge recombination (CR) at sidewall surfaces, but its atomistic mechanisms are not well understood. In addition, GaAs NWs usually contain a high density of twin defects that form a twin superlattice, but its effects on CR dynamics are largely unknown. Here, quantum molecular dynamics (QMD) simulations reveal the existence of an intrinsic type-II heterostructure at the (110) GaAs surface. Nonadiabatic quantum molecular dynamics (NAQMD) simulations show that the resulting staggered band alignment causes a photoexcited electron in the bulk to rapidly transfer to the surface. We have found orders-of-magnitude enhancement of the CR rate at the surface compared with the bulk value. Furthermore, QMD and NAQMD simulations show unique surface electronic states at alternating (111)A and (111)B sidewall surfaces of a twinned [111]-oriented GaAs NW, which act as effective CR centers. The calculated large surface recombination velocity quantitatively explains recent experimental observations and provides microscopic understanding of the underlying CR processes.

  20. Photovoltaics: From the laboratory to the marketplace

    Energy Technology Data Exchange (ETDEWEB)

    Basso, T.S.; Surek, T.; Thornton, J.


    Photovoltaics (PV), the direct conversion of sunlight to electricity, is experiencing significant improvements in technology performance and lowered costs. Fostering these improvements, the SERI Photovoltaic Advanced Research and Development (PV AR D) Project supports research and provides services to the US PV industry. This paper presents the recent advances and future direction of the PV project. Research areas are Fundamental and Supporting Research, Advanced Thin-Film Materials, High-Efficiency Materials, Module Development, and Systems Development. Materials of interest include amorphous silicon, copper indium diselenide, cadmium telluride, crystalline silicon, gallium arsenide and related alloys, transparent conductors, antireflection coatings, substrates, and encapsulants. The PV project inherently provides technology transfer that helps industry shorten the time to bring R D advances to the marketplace. SERI annually performs over 10,000 measurements for the entire PV community, participates in collaborative research, and welcomes visiting scientists. Two specific areas of recently increased national focus are: (1) manufacturing processes for cost-effective PV modules, and (2) systems development for high-value utility applications. The SERI research approach is based on facilitating direct contact between industry, electric utilities, and others interested in PV technology. This approach heavily relies on SERI/industry partnerships. The arrangements vary to address generic and company-specific problems to improve the US industry's competitive position and accelerate greater electric utility deployment of PV systems. 5 refs., 5 figs., 6 tabs.

  1. Inverted Metamorphic Multijunction (IMM) Cell Processing Instructions

    Energy Technology Data Exchange (ETDEWEB)

    Duda, A.; Ward, S.; Young, M.


    This technical report details the processing schedule used to fabricate Inverted Metamorphic Multijunction (IMM) concentrator solar cells at The National Renewable Energy Laboratory (NREL). These devices are used as experimental test structures to support the research at NREL that is focused on increasing the efficiency of photovoltaic power conversion. They are not intended to be devices suitable for deployment in working concentrator systems primarily because of heat sinking issues. The process schedule was developed to be compatible with small sample sizes and to afford relatively rapid turn-around times, in support of research efforts. The report describes the use of electro deposition of gold for both the back and front contacts. Electro-deposition is used because of its rapid turn around time and because it is a benign metallization technique that is seldom responsible for damage to the semiconductors. The layer transfer technique is detailed including the use of a commercially available adhesive and the etching away of the parent gallium arsenide substrate. Photolithography is used to define front contact grids as well as the mesa area of the cell. Finally, the selective wet chemical etchant system is introduced and its use to reveal the back contact is described.

  2. Design optimization of beta- and photovoltaic conversion devices

    Energy Technology Data Exchange (ETDEWEB)

    Wichner, R.; Blum, A.; Fischer-Colbrie, E.; Chau, H.


    This report presents the theoretical and experimental results of an LLL Electronics Engineering research program aimed at optimizing the design and electronic-material parameters of beta- and photovoltaic p-n junction conversion devices. To meet this objective, a comprehensive computer code has been developed that can handle a broad range of practical conditions. The physical model upon which the code is based is described first. Then, an example is given of a set of optimization calculations along with the resulting optimized efficiencies for silicon (Si) and gallium-arsenide (GaAs) devices. The model we have developed, however, is not limited to these materials. It can handle any appropriate material--single or polycrystalline-- provided energy absorption and electron-transport data are available. To check code validity, the performance of experimental silicon p-n junction devices (produced in-house) were measured under various light intensities and spectra as well as under tritium beta irradiation. The results of these tests were then compared with predicted results based on the known or best estimated device parameters. The comparison showed very good agreement between the calculated and the measured results.

  3. Diffraction of quantum dots reveals nanoscale ultrafast energy localization. (United States)

    Vanacore, Giovanni M; Hu, Jianbo; Liang, Wenxi; Bietti, Sergio; Sanguinetti, Stefano; Zewail, Ahmed H


    Unlike in bulk materials, energy transport in low-dimensional and nanoscale systems may be governed by a coherent "ballistic" behavior of lattice vibrations, the phonons. If dominant, such behavior would determine the mechanism for transport and relaxation in various energy-conversion applications. In order to study this coherent limit, both the spatial and temporal resolutions must be sufficient for the length-time scales involved. Here, we report observation of the lattice dynamics in nanoscale quantum dots of gallium arsenide using ultrafast electron diffraction. By varying the dot size from h = 11 to 46 nm, the length scale effect was examined, together with the temporal change. When the dot size is smaller than the inelastic phonon mean-free path, the energy remains localized in high-energy acoustic modes that travel coherently within the dot. As the dot size increases, an energy dissipation toward low-energy phonons takes place, and the transport becomes diffusive. Because ultrafast diffraction provides the atomic-scale resolution and a sufficiently high time resolution, other nanostructured materials can be studied similarly to elucidate the nature of dynamical energy localization.

  4. Analytical study of pulsed laser irradiation on some materials used for photovoltaic cells on satellites (United States)

    Abd El-Hameed, Afaf M.


    The present research concerns on the study of laser-powered solar panels used for space applications. A mathematical model representing the laser effects on semiconductors has been developed. The temperature behavior and heat flow on the surface and through a slab has been studied after exposed to nano-second pulsed laser. The model is applied on two different types of common active semiconductor materials that used for photovoltaic cells fabrication as silicon (Si), and gallium arsenide (GaAs). These materials are used for receivers' manufacture for laser beamed power in space. Various values of time are estimated to clarify the heat flow through the material sample and generated under the effects of pulsed laser irradiation. These effects are theoretically studied in order to determine the performance limits of the solar cells when they are powered by laser radiation during the satellite eclipse. Moreover, the obtained results are carried out to optimize conversion efficiency of photovoltaic cells and may be helpful to give more explanation for layout of the light-electricity space systems.

  5. Characterization of GaAs:Cr-based Timepix detector using synchrotron radiation and charged particles (United States)

    Smolyanskiy, P.; Chelkov, G.; Guskov, A.; Dedovich, D.; Kozhevnikov, D.; Kruchonak, U.; Leyva Fabelo, A.; Zhemchugov, A.


    The interest in the use of high resistivity gallium arsenide compensated by chromium (GaAs:Cr) for photon detection has been growing steadily due to its numerous advantages over silicon. At the same time, the prospects of this material as a sensor for pixel detectors in nuclear and high energy physics are much less studied. In this paper we report the results of characterization of the Timepix detectors hybridized with GaAs:Cr sensors of various thickness using synchrotron radiation and various charged particles, including alphas and heavy ions. The energy and spatial resolution have been determined. Interesting features of GaAs:Cr specific to the detector response to an extremely dense energy deposit by heavy ions have been observed for the first time. The long-term stability of the detector has been evaluated based on the measurements performed over one year. Possible limitation of GaAs:Cr as a sensor for high flux X-ray imaging is discussed.

  6. Stable phases in aged type 321 stainless steel

    Energy Technology Data Exchange (ETDEWEB)

    Bentley, J.; Leitnaker, J.M.


    X-ray diffraction and Analytical Electron Microscopy have been used to characterize the precipitate phases present in type 321 stainless steel after 17 years of service at approximately 600/sup 0/C. The morphology, crystallography, and orientation relationships with the matrix of the precipitates have been determined along with the chemical composition of several of the phases. Long-term aging of type 321 stainless steel indicates TiC, not M/sub 23/C/sub 6/, is the stable carbide phase. A theory is developed to explain appearance of M/sub 23/C/sub 6/ at intermediate times. The theory also indicates the means for preventing M/sub 23/C/sub 6/ formation and hence sensitization of the steel to intergranular corrosion. The amount of sigma found correlates well with results from shorter time studies. Ti/sub 4/C/sub 2/S/sub 2/ and a complex phosphide-arsenide were also present.

  7. Bench testing of a heterodyne CO2 laser dispersion interferometer for high temporal resolution plasma density measurements (United States)

    Akiyama, T.; Van Zeeland, M. A.; Boivin, R. L.; Carlstrom, T. N.; Chavez, J. A.; Muscatello, C. M.; O'Neill, R. C.; Vasquez, J.; Watkins, M.; Martin, W.; Colio, A.; Finkenthal, D. K.; Brower, D. L.; Chen, J.; Ding, W. X.; Perry, M.


    A heterodyne detection scheme is combined with a 10.59 μm CO2 laser dispersion interferometer for the first time to allow large bandwidth measurements in the 10-100 MHz range. The approach employed utilizes a 40 MHz acousto-optic cell operating on the frequency doubled CO2 beam which is obtained using a high 2nd harmonic conversion efficiency orientation patterned gallium arsenide crystal. The measured standard deviation of the line integrated electron density equivalent phase resolution obtained with digital phase demodulation technique, is 4 × 1017 m-2. Air flow was found to significantly affect the baseline of the phase signal, which an optical table cover was able to reduce considerably. The heterodyne dispersion interferometer (DI) approach is found to be robustly insensitive to motion, with measured phase shifts below baseline drifts even in the presence of several centimeters of retroreflector induced path length variations. Plasma induced dispersion was simulated with a wedged ZnSe plate and the measured DI phase shifts are consistent with expectations.

  8. Low concentration ratio solar array for low Earth orbit multi-100 kW application. Volume 1: Design, analysis and development tests (United States)


    A preliminary design effort directed toward a low concentration ratio photovoltaic array system capable of delivering multihundred kilowatts (300 kW to 1000 kW range) in low earth orbit is described. The array system consists of two or more array modules each capable of delivering between 113 kW to 175 kW using silicon solar cells or gallium arsenide solar cells, respectively. The array module deployed area is 1320 square meters and consists of 4356 pyramidal concentrator elements. The module, when stowed in the Space Shuttle's payload bay, has a stowage volume of a cube with 3.24 meters on a side. The concentrator elements are sized for a geometric concentration ratio (GCR) of six with an aperture area of .25 sq. m. The structural analysis and design trades leading to the baseline design are discussed. It describes the configuration, as well as optical, thermal and electrical performance analyses that support the design and overall performance estimates for the array are described.

  9. Low concentration ratio solar array for low Earth orbit multi-100 kW application (United States)

    Nalbandian, S. J.


    An ongoing preliminary design effort directed toward a low-concentration-ratio photovoltaic array system based on 1984 technology and capable of delivering multi-hundred kilowatts (300 kW to 1000 kW range) in low earth orbit is described. The array system consists of two or more array modules each capable of delivering between 80 kW to 172 kW using silicon solar cells or gallium arsenide solar cells respectively. The array module deployed area is 1320 square meters and consists of 4356 pryamidal concentrator elements. The module, when stowed in the Space Shuttle's payload bay, has a stowage volume of a cube with 3.24 meters on a side. The concentrator elements are sized for a geometric concentration ratio (GCR) of six with an aperture area of 0.5 meters x 0.5 meters. The structural analysis and design trades leading to the baseline design are discussed. The configuration, as well as optical, thermal and electrical performance analyses that support the design and overall performance estimates for the array are described.

  10. Diffusion lengths in irradiated N/P InP-on-Si solar cells (United States)

    Wojtczuk, Steven; Colerico, Claudia; Summers, Geoffrey P.; Walters, Robert J.; Burke, Edward A.


    Indium phosphide (InP) solar cells are being made on silicon (Si) wafers (InP/Si) to take advantage of both the radiation-hardness properties of the InP solar cell and the light weight and low cost of Si wafers compared to InP or germanium (Ge) wafers. The InP/Si cell application is for long duration and/or high radiation orbit space missions. InP/Si cells have higher absolute efficiency after a high radiation dose than gallium arsenide (GaAs) or silicon (Si) solar cells. In this work, base electron diffusion lengths in the N/P cell are extracted from measured AM0 short-circuit photocurrent at various irradiation levels out to an equivalent 1 MeV fluence of 1017 1 MeV electrons/sq cm for a 1 sq cm 12% BOL InP/Si cell. These values are then checked for consistency by comparing measured Voc data with a theoretical Voc model that includes a dark current term that depends on the extracted diffusion lengths.

  11. Growth of doped silicon nanowires by pulsed laser deposition and their analysis by electron beam induced current imaging

    Energy Technology Data Exchange (ETDEWEB)

    Eisenhawer, B; Berger, A; Christiansen, S [Institute of Photonic Technology, Albert-Einstein-Strasse 9, 07745 Jena (Germany); Zhang, D; Clavel, R [Laboratory of Robotic Systems, Ecole Polytechnique Federale de Lausanne (EPFL), Station 9, CH-1015 Lausanne (Switzerland); Michler, J, E-mail: [Mechanics of Materials and Nanostructures Laboratory, EMPA-Materials Science and Technology, Feuerwerkstrasse 39, CH-3602 Thun (Switzerland)


    Doped silicon nanowires (NWs) were epitaxially grown on silicon substrates by pulsed laser deposition following a vapour-liquid-solid process, in which dopants together with silicon atoms were introduced into the gas phase by laser ablation of lightly and highly doped silicon target material. p-n or p{sup ++}-p junctions located at the NW-silicon substrate interfaces were thus realized. To detect these junctions and visualize them the electron beam induced current technique and two-point probe current-voltage measurements were used, based on nanoprobing individual silicon NWs in a scanning electron microscope. Successful silicon NW doping by pulsed laser deposition of doped target material could experimentally be demonstrated. This doping strategy compared to the commonly used doping from the gas phase during chemical vapour deposition is evaluated essentially with a view to potentially overcoming the limitations of chemical vapour deposition doping, which shows doping inhomogeneities between the top and bottom of the NW as well as between the core and shell of NWs and structural lattice defects, especially when high doping levels are envisaged. The pulsed laser deposition doping technique yields homogeneously doped NWs and the doping level can be controlled by the choice of the target material. As a further benefit, this doping procedure does not require the use of poisonous gases and may be applied to grow not only silicon NWs but also other kinds of doped semiconductor NWs, e.g. group III nitrides or arsenides.

  12. Nanowire Photovoltaic Devices (United States)

    Forbes, David


    Firefly Technologies, in collaboration with the Rochester Institute of Technology and the University of Wisconsin-Madison, developed synthesis methods for highly strained nanowires. Two synthesis routes resulted in successful nanowire epitaxy: direct nucleation and growth on the substrate and a novel selective-epitaxy route based on nanolithography using diblock copolymers. The indium-arsenide (InAs) nanowires are implemented in situ within the epitaxy environment-a significant innovation relative to conventional semiconductor nanowire generation using ex situ gold nanoparticles. The introduction of these nanoscale features may enable an intermediate band solar cell while simultaneously increasing the effective absorption volume that can otherwise limit short-circuit current generated by thin quantized layers. The use of nanowires for photovoltaics decouples the absorption process from the current extraction process by virtue of the high aspect ratio. While no functional solar cells resulted from this effort, considerable fundamental understanding of the nanowire epitaxy kinetics and nanopatterning process was developed. This approach could, in principle, be an enabling technology for heterointegration of dissimilar materials. The technology also is applicable to virtual substrates. Incorporating nanowires onto a recrystallized germanium/metal foil substrate would potentially solve the problem of grain boundary shunting of generated carriers by restricting the cross-sectional area of the nanowire (tens of nanometers in diameter) to sizes smaller than the recrystallized grains (0.5 to 1 micron(exp 2).

  13. Pretreatment and thiosulfate leaching of refractory gold-bearing arsenosulfide concentrates

    Institute of Scientific and Technical Information of China (English)

    Yuqun Meng


    A hydrometallurgical process for refractory gold-bearing arsenosulfide concentrates at ambient temperature and pressure was presented, including fine grinding with intensified alkali-leaching (FGIAL), enhanced agitation alkali-leaching (EAAL), thiosulfate leaching and displacement. Experimental results on a refractory gold concentrate showed that the total consumption of NaOH in alkaline leaching is only 41% of those theoretically calculated under the conditions of full oxidization for the same amount of arsenides and sulfides transformed into arsenates and sulfates, and 72.3% of gold is synchro-dissoluted by thiosulfate self-generated during alkaline leaching. After alkaline leaching, thiosulfate leaching was carried out for 24 h. The dissolution of gold is increased to 91.9% from 4.6% by cyanide without the pretreatment. The displacement of gold by zinc powder in the solution gets to 99.2%. Due to an amount of thiosulfate self-generated during alkaline leaching, the reagent addition in thiosulfate leaching afterwards is lower than the normal.

  14. Coexistence of multiple charge-density waves and superconductivity in SrPt2As2 revealed by 75As-NMR /NQR and 195Pt-NMR (United States)

    Kawasaki, Shinji; Tani, Yoshihiko; Mabuchi, Tomosuke; Kudo, Kazutaka; Nishikubo, Yoshihiro; Mitsuoka, Daisuke; Nohara, Minoru; Zheng, Guo-qing


    The relationship between charge-density wave (CDW) orders and superconductivity in arsenide superconductor SrPt2As2 with Tc=5.2 K which crystallizes in the CaBe2Ge2 -type structure was studied by 75As nuclear magnetic resonance (NMR) measurements up to 520 K, and 75As nuclear quadrupole resonance (NQR) and 195Pt-NMR measurements down to 1.5 K. At high temperature, 75As-NMR spectrum and nuclear-spin-relaxation rate (1 /T1) have revealed two distinct CDW orders, one realized in the As-Pt-As layer below TCDWAs (1 )=410 K and the other in the Pt-As-Pt layer below TCDWAs (2 )=255 K . The 1 /T1 measured by 75As-NQR shows a clear Hebel-Slichter peak just below Tc and decreases exponentially well below Tc. Concomitantly, 195Pt Knight shift decreases below Tc. Our results indicate that superconductivity in SrPt2As2 is in the spin-singlet state with an s -wave gap and is robust under the two distinct CDW orders in different layers.

  15. Ampoule failure sensor development for semiconductor crystal growth experiments (United States)

    Watring, Dale A.; Johnson, Martin


    Currently there are no devices to detect an ampoule failure in semiconductor crystal growth experiments. If an ampoule fails, it will go undetected until the containing cartridge is breached due to chemical degradation. The experiment will then be terminated resulting in a failed experiment and a loss of data. The objective of this research was to develop a reliable failure sensor that would detect a specific liquid or vapor material before the metallic cartridge is degraded and the processing furnace contaminated. The sensor is a chemical fuse made from a metal with which the semiconductor material reacts more rapidly than it does with the containing cartridge. Upon ampoule failure, the sensor is exposed to the vapor or liquid semiconductor and the chemical reaction causes a resistance change in the sensor material. The sensor shows a step change in resistance on the order of megohms when exposed to mercury zinc telluride (HgZnTe), mercury cadmium telluride (HgCdTe), or gallium arsenide (GaAs). This ampoule failure sensor is being tested for possible use on the second United States Microgravity Mission (USML-2) and is the subject of a NASA patent application.

  16. Large transverse Hall-like signal in topological Dirac semimetal Cd3As2 (United States)

    Guo, Shih-Ting; Sankar, R.; Chien, Yung-Yu; Chang, Tay-Rong; Jeng, Horng-Tay; Guo, Guang-Yu; Chou, F. C.; Lee, Wei-Li


    Cadmium arsenide (Cd3As2) is known for its inverted band structure and ultra-high electron mobility. It has been theoretically predicted and also confirmed by ARPES experiments to exhibit a 3D Dirac semimetal phase containing degenerate Weyl nodes. From magneto-transport measurements in high quality single crystals of Cd3As2, a small effective mass m* ≈ 0.05 me is determined from the Shubnikov-de Haas (SdH) oscillations. In certain field orientations, we find a splitting of the SdH oscillation frequency in the FFT spectrum suggesting a possible lifting of the double degeneracy in accord with the helical spin texture at outer and inner Fermi surfaces with opposite chirality predicted by our ab initio calculations. Strikingly, a large antisymmetric magnetoresistance with respect to the applied magnetic fields is uncovered over a wide temperature range in needle crystal of Cd3As2 with its long axis along [112] crystal direction. It reveals a possible contribution of intrinsic anomalous velocity term in the transport equation resulting from a unique 3D Rashba-like spin splitted bands that can be obtained from band calculations with the inclusion of Cd antisite defects.

  17. Visualizing weakly bound surface Fermi arcs and their correspondence to bulk Weyl fermions. (United States)

    Batabyal, Rajib; Morali, Noam; Avraham, Nurit; Sun, Yan; Schmidt, Marcus; Felser, Claudia; Stern, Ady; Yan, Binghai; Beidenkopf, Haim


    Fermi arcs are the surface manifestation of the topological nature of Weyl semimetals, enforced by the bulk-boundary correspondence with the bulk Weyl nodes. The surface of tantalum arsenide, similar to that of other members of the Weyl semimetal class, hosts nontopological bands that obscure the exploration of this correspondence. We use the spatial structure of the Fermi arc wave function, probed by scanning tunneling microscopy, as a spectroscopic tool to distinguish and characterize the surface Fermi arc bands. We find that, as opposed to nontopological states, the Fermi arc wave function is weakly affected by the surface potential: it spreads rather uniformly within the unit cell and penetrates deeper into the bulk. Fermi arcs reside predominantly on tantalum sites, from which the topological bulk bands are derived. Furthermore, we identify a correspondence between the Fermi arc dispersion and the energy and momentum of the bulk Weyl nodes that classify this material as topological. We obtain these results by introducing an analysis based on the role the Bloch wave function has in shaping quantum electronic interference patterns. It thus carries broader applicability to the study of other electronic systems and other physical processes.

  18. Native gallium adatoms discovered on atomically-smooth gallium nitride surfaces at low temperature. (United States)

    Alam, Khan; Foley, Andrew; Smith, Arthur R


    In advanced compound semiconductor devices, such as in quantum dot and quantum well systems, detailed atomic configurations at the growth surfaces are vital in determining the structural and electronic properties. Therefore, it is important to investigate the surface reconstructions in order to make further technological advancements. Usually, conventional semiconductor surfaces (e.g., arsenides, phosphides, and antimonides) are highly reactive due to the existence of a high density of group V (anion) surface dangling bonds. However, in the case of nitrides, group III rich growth conditions in molecular beam epitaxy are usually preferred leading to group III (Ga)-rich surfaces. Here, we use low-temperature scanning tunneling microscopy to reveal a uniform distribution of native gallium adatoms with a density of 0.3%-0.5% of a monolayer on the clean, as-grown surface of nitrogen polar GaN(0001̅) having the centered 6 × 12 reconstruction. Unseen at room temperature, these Ga adatoms are strongly bound to the surface but move with an extremely low surface diffusion barrier and a high density saturation coverage in thermodynamic equilibrium with Ga droplets. Furthermore, the Ga adatoms reveal an intrinsic surface chirality and an asymmetric site occupation. These observations can have important impacts in the understanding of gallium nitride surfaces.

  19. Integration techniques of pHEMTs and planar Gunn diodes on GaAs substrates (United States)

    Papageorgiou, Vasileios; Khalid, Ata; Li, Chong; Steer, Matthew J.; Cumming, David R. S.


    This work presents two different approaches for the implementation of pseudomorphic high electron mobility transistors (pHEMTs) and planar Gunn diodes on the same gallium arsenide substrate. In the first approach, a combined wafer is used where a buffer layer separates the active layers of the two devices. A second approach was also examined using a single wafer where the AlGaAs/InGaAs/GaAs heterostructures were designed for the realisation of pHEMTs. The comparison between the two techniques showed that the devices fabricated on the single pHEMT wafer presented superior performance over the combined wafer technique. The DC and small-signal characteristics of the pHEMTs on the single wafer were enhanced after the use of T-gates with 70 nm length. The maximum transconductance of the transistors was equal to 780 mS/mm with 200 GHz maximum frequency of oscillation (fmax). Planar Gunn diodes fabricated in the pHEMT wafer, with 1.3 μm anode-to-cathode separation (LAC) presented oscillations at 87.6 GHz with maximum power of oscillation equal to -40 dBm.

  20. Direct measurements of multi-photon induced nonlinear lattice dynamics in semiconductors via time-resolved x-ray scattering (United States)

    Williams, G. Jackson; Lee, Sooheyong; Walko, Donald A.; Watson, Michael A.; Jo, Wonhuyk; Lee, Dong Ryeol; Landahl, Eric C.


    Nonlinear optical phenomena in semiconductors present several fundamental problems in modern optics that are of great importance for the development of optoelectronic devices. In particular, the details of photo-induced lattice dynamics at early time-scales prior to carrier recombination remain poorly understood. We demonstrate the first integrated measurements of both optical and structural, material-dependent quantities while also inferring the bulk impulsive strain profile by using high spatial-resolution time-resolved x-ray scattering (TRXS) on bulk crystalline gallium arsenide. Our findings reveal distinctive laser-fluence dependent crystal lattice responses, which are not described by previous TRXS experiments or models. The initial linear expansion of the crystal upon laser excitation stagnates at a laser fluence corresponding to the saturation of the free carrier density before resuming expansion in a third regime at higher fluences where two-photon absorption becomes dominant. Our interpretations of the lattice dynamics as nonlinear optical effects are confirmed by numerical simulations and by additional measurements in an n-type semiconductor that allows higher-order nonlinear optical processes to be directly observed as modulations of x-ray diffraction lineshapes.

  1. Dynamics and stability of the Townsend discharge in nitrogen in narrow gaps (United States)

    Astrov, Yu. A.; Lodygin, A. N.; Portsel, L. M.


    This paper investigates the dynamics of the Townsend discharge in nitrogen in narrow gaps. To provide stability of discharge in a broad range of current, we apply a plane-parallel structure, one of the electrodes of which is made of a high-resistivity gallium arsenide. The results of experiments are analyzed in the framework of theory [Yu. P. Raizer et al., Tech. Phys. 51, 185 (2006), 10.1134/S1063784206020071], which considers the dynamics of discharge in short nitrogen-filled gaps of similar structures. According to the theory, a key parameter of discharge dynamics is time ϑ that defines the rate of discharge response to perturbations. In our work, time ϑ is experimentally found by analyzing the noise spectrum of the discharge glow in the stable and spatially uniform state of the structure. This characteristic time depends linearly on the discharge gap width, which corroborates conclusions based on the standard model of Townsend discharge. However, its values are substantially shorter compared to those predicted by theory. The relationship between ϑ and experimentally observed critical current density for the oscillatory instability, jcr, is applied to find the discharge negative differential resistance for a set of parameters of the discharge gap.

  2. Passive shortwave infrared broadband and hyperspectral imaging in a maritime environment (United States)

    Judd, K. Peter; Nichols, Jonathan M.; Howard, J. Grant; Waterman, James R.; Vilardebo, Kenneth M.


    This work offers a comparison of broadband shortwave infrared, defined as the spectral band from 0.9 to 1.7 μm, and hyperspectral shortwave infrared imagers in a marine environment under various daylight conditions. Both imagers are built around a Raytheon Vision Systems large format (1024×1280) indium-gallium-arsenide focal plane array with high dynamic range and low noise electronics. Sample imagery from a variety of objects and scenes indicates roughly the same visual performance between the two systems. However, we show that the more detailed spectral information provided by the hyperspectral system allows for object detection and discrimination. A vessel was equipped with panels coated with a variety of paints that possessed spectral differences in the 0.9 to 1.7 μm waveband. The vessel was imaged at various ranges, states of background clutter, and times of the day. Using a standard correlation receiver, it is demonstrated that image pixels containing the paint can be easily identified. During the exercise, it was also observed that both bow waves and near-field wakes from a wide variety of vessel traffic provide a spectral signature in the shortwave infrared waveband that could potentially be used for object tracking.

  3. Ultrahigh bandwidth signal processing (United States)

    Oxenløwe, Leif Katsuo


    Optical time lenses have proven to be very versatile for advanced optical signal processing. Based on a controlled interplay between dispersion and phase-modulation by e.g. four-wave mixing, the processing is phase-preserving, and hence useful for all types of data signals including coherent multi-level modulation formats. This has enabled processing of phase-modulated spectrally efficient data signals, such as orthogonal frequency division multiplexed (OFDM) signals. In that case, a spectral telescope system was used, using two time lenses with different focal lengths (chirp rates), yielding a spectral magnification of the OFDM signal. Utilising such telescopic arrangements, it has become possible to perform a number of interesting functionalities, which will be described in the presentation. This includes conversion from OFDM to Nyquist WDM, compression of WDM channels to a single Nyquist channel and WDM regeneration. These operations require a broad bandwidth nonlinear platform, and novel photonic integrated nonlinear platforms like aluminum gallium arsenide nano-waveguides used for 1.28 Tbaud optical signal processing will be described.

  4. Accumulation of trace elements used in semiconductor industry in Formosan squirrel, as a bio-indicator of their exposure, living in Taiwan. (United States)

    Suzuki, Yoshinari; Watanabe, Izumi; Oshida, Tatsuo; Chen, Yen-Jean; Lin, Liang-Kong; Wang, Yu-Huang; Yang, Kouh-Cheng; Kuno, Katsuji


    Concentrations of 17 trace elements were analyzed using inductively coupled plasma-mass spectrometry (ICP-MS) in Formosan squirrels (Callosciurus erythraeus) of Taiwan and Japan to document trace element pollution in Taiwan. High concentrations of elements used to produce semiconductors - Ga, As, Cd, In and Tl - were found in animals captured in Miaoli County, which is the nearest site to Hsinchu City, a chief city of Taiwan's semiconductor industry. Significant correlations between Ga, As, In and Tl were found in the kidney, liver, lung and muscle tissues of Taiwanese squirrels. Hierarchical cluster analysis indicated that Ga, As, In and Tl were of the same clade, indicating that Ga, As, In and Tl were discharged from an identical origin. Molar ratios of Ga/As concentration in lungs of animals captured in Miaoli resembled those of animals after intratracheal administration of particulate gallium arsenide (GaAs). This result might indicate that the higher concentrations of Ga and As in the specimens in Miaoli resulted from atmospheric exposure to GaAs.

  5. Influence of the Thickness of the Barrier Layer in Nanoheterostructures and the Gate-Drain Capacitance on the Microwave and Noise Parameters of Field-Effect AlGaN/GaN HEMT (United States)

    Mikhaylovich, S. V.; Fedorov, Yu. V.


    We perform a computational and analytical study of how the thickness of the barrier layer in nanoheterostructures and the gate-drain capacitance C gd influence the microwave parameters (limiting frequency of current amplification and maximum generation frequency) and noise parameters (noise factor) of a field-effect AlGaN/GaN high electron mobility transistor. The results of complex measurements of the parameters of such transistors based on nanoheterostructures with a barrier layer thickness of 3.5-15.7 nm, which were performed within the framework of four technological routes in the range 0.1-67 GHz, are presented. It is shown that in order to reduce the noise ratio and improve the microwave parameters, it is necessary to optimize both the parameters of nanoheterostructures and the manufacturing techniques. In particular, the thickness of the barrier layer should be reduced, and the gate length should be chosen such as to maximize the product of the squared maximum current amplification frequency in the interior of the transistor and the output impedance between the drain and the source. Additionally, attention should be given to the shape of the gate to reduce the capacitance C gd. Under certain conditions of manufacture of nitride field-effect HEMT, one can achieve a lower noise factor compared with the transistors based on arsenide nanoheterostructures.

  6. Updated Results of a Solid-State Sensor Irradiation Study for ILC Extreme Forward Calorimetry

    CERN Document Server

    Courcoubetis, George; Fadeyev, Vitaliy; Kelley, Thomas; Martinez-McKinney, Forest; Schumm, Bruce A; Spencer, Edwin; Tang, Vivian; Wilder, Max


    Detectors proposed for the International Linear Collider (ILC) incorporate a tungsten sampling calorimeter (`BeamCal') intended to reconstruct showers of electrons, positrons and photons that emerge from the interaction point of the collider with angles between 5 and 50 milliradians. For the innermost radius of this calorimeter, radiation doses at shower-max are expected to reach 100 MRad per year, primarily due to minimum-ionizing electrons and positrons that arise in the induced electromagnetic showers of e+e- `beamstrahlung' pairs produced in the ILC beam-beam interaction. However, radiation damage to calorimeter sensors may be dominated by hadrons induced by nuclear interactions of shower photons, which are much more likely to contribute to the non-ionizing energy loss that has been observed to damage sensors exposed to hadronic radiation. We report here on the results of SLAC Experiment T-506, for which several different types of silicon diode and gallium-arsenide sensors were exposed to doses of radiati...

  7. Updated Results of a Solid-State Sensor Irradiation Study for ILC Extreme Forward Calorimetry

    CERN Document Server

    Courcoubetis, George; Fadeyev, Vitaliy; Fink, Caleb; Guillemaud, Nikolas; Renteria, Cesar Gonzalez; Gruey, Benjamin; LaBarre, Patrick; Martinez-McKinney, Forest; Rischbieter, Greg; Schumm, Bruce A; Spencer, Edwin; Wilder, Max


    Detectors proposed for the International Linear Collider (ILC) incorporate a tungsten sampling calorimeter (`BeamCal') intended to reconstruct showers of electrons, positrons and photons that emerge from the interaction point of the collider with angles between 5 and 50 milliradians. For the innermost radius of this calorimeter, radiation doses at shower max are expected to reach 100 Mrad per year, primarily due to minimum-ionizing electrons and positrons that arise in the induced electromagnetic showers of e+e- `beamstrahlung' pairs produced in the ILC beam-beam interaction. However, radiation damage to calorimeter sensors may be dominated by hadrons induced by nuclear interactions of shower photons, which are much more likely to contribute to the non-ionizing energy loss that has been observed to damage sensors exposed to hadronic radiation. We report here on the results of SLAC Experiment T-506, for which several different types of silicon diode and gallium-arsenide sensors were exposed to doses of radiati...

  8. Modeling of high efficiency solar cells under laser pulse for power beaming applications (United States)

    Jain, Raj K.; Landis, Geoffrey A.


    Solar cells have been used to convert sunlight to electrical energy for many years and also offer great potential for non-solar energy conversion applications. Their greatly improved performance under monochromatic light compared to sunlight, makes them suitable as photovoltaic (PV) receivers in laser power beaming applications. Laser beamed power to a PV array receiver could provide power to satellites, an orbital transfer vehicle, or a lunar base. Gallium arsenide (GaAs) and indium phosphide (InP) solar cells have calculated efficiencies of more than 50 percent under continuous illumination at the optimum wavelength. Currently high power free-electron lasers are being developed which operate in pulsed conditions. Understanding cell behavior under a laser pulse is important in the selection of the solar cell material and the laser. An experiment by NAsA lewis and JPL at the AVLIS laser facility in Livermore, CA presented experimental data on cell performance under pulsed laser illumination. Reference 5 contains an overview of technical issues concerning the use of solar cells for laser power conversion, written before the experiments were performed. As the experimental results showed, the actual effects of pulsed operation are more complicated. Reference 6 discusses simulations of the output of GaAs concentrator solar cells under pulsed laser illumination. The present paper continues this work, and compares the output of Si and GaAs solar cells.

  9. Different doses of low-level laser irradiation modulate the in vitro response of osteoblast-like cells (United States)

    Incerti Parenti, Serena; Checchi, Luigi; Fini, Milena; Tschon, Matilde


    Because osteoblasts play a key role in bone remodeling and the influence of low-level laser therapy on this process is not clear, Saos-2 human osteoblast-like cells were irradiated by a gallium-aluminum-arsenide diode laser (915 nm) for 10, 48, 96, 193, and 482 s using doses 1, 5, 10, 20, and 50 J/cm2, respectively. A control group was not irradiated. Morphology, viability, and cytotoxicity analyses were carried out after 1 hr, 1 day, and 3 days. Deoxyribose nucleic acid (DNA) content and release of vascular endothelial growth factor (VEGF), receptor activator of nuclear factor kappa B ligand (RANKL), and osteoprotegerin (OPG) were evaluated. Viability was modulated by laser irradiation in a dose-dependent manner, with 10 J/cm2 inducing a biostimulatory response and 20 to 50 J/cm2 determining a bioinhibitory and cytotoxic effect. Accordingly, DNA content was generally increased for the 10 J/cm2 dose and decreased for the 50 J/cm2 dose. A rapid and transitory trend toward increased RANKL/OPG ratio and a tendency toward a delayed increase in VEGF release for doses of 1 to 10 J/cm2 was found. Further investigations using the biostimulatory dose of 10 J/cm2 emerged from this study are needed to establish the ideal treatment regimens in the laboratory as well as in clinical practice.

  10. High-Performance GaAs Nanowire Solar Cells for Flexible and Transparent Photovoltaics. (United States)

    Han, Ning; Yang, Zai-xing; Wang, Fengyun; Dong, Guofa; Yip, SenPo; Liang, Xiaoguang; Hung, Tak Fu; Chen, Yunfa; Ho, Johnny C


    Among many available photovoltaic technologies at present, gallium arsenide (GaAs) is one of the recognized leaders for performance and reliability; however, it is still a great challenge to achieve cost-effective GaAs solar cells for smart systems such as transparent and flexible photovoltaics. In this study, highly crystalline long GaAs nanowires (NWs) with minimal crystal defects are synthesized economically by chemical vapor deposition and configured into novel Schottky photovoltaic structures by simply using asymmetric Au-Al contacts. Without any doping profiles such as p-n junction and complicated coaxial junction structures, the single NW Schottky device shows a record high apparent energy conversion efficiency of 16% under air mass 1.5 global illumination by normalizing to the projection area of the NW. The corresponding photovoltaic output can be further enhanced by connecting individual cells in series and in parallel as well as by fabricating NW array solar cells via contact printing showing an overall efficiency of 1.6%. Importantly, these Schottky cells can be easily integrated on the glass and plastic substrates for transparent and flexible photovoltaics, which explicitly demonstrate the outstanding versatility and promising perspective of these GaAs NW Schottky photovoltaics for next-generation smart solar energy harvesting devices.

  11. The effectiveness of low laser therapy in subacromial impingement syndrome: a randomized placebo controlled double-blind prospective study

    Directory of Open Access Journals (Sweden)

    Sebnem Koldas Dogan


    Full Text Available OBJECTIVES: Conflicting results were reported about the effectiveness of Low level laser therapy on musculoskeletal disorders. The aim of this study was to investigate the effectiveness of 850-nm gallium arsenide aluminum (Ga-As-Al laser therapy on pain, range of motion and disability in subacromial impingement syndrome. METHODS: A total of 52 patients (33 females and 19 males with a mean age of 53.59±11.34 years with subacromial impingement syndrome were included. The patients were randomly assigned into two groups. Group I (n = 30, laser group received laser therapy (5 joule/cm² at each point over maximum 5-6 painful points for 1 minute. Group II (n = 22, placebo laser group received placebo laser therapy. Initially cold pack (10 minutes was applied to all of the patients. Also patients were given an exercise program including range of motion, stretching and progressive resistive exercises. The therapy program was applied 5 times a week for 14 sessions. Pain severity was assessed by using visual analogue scale. Range of motion was measured by goniometer. Disability was evaluated by using Shoulder Pain and Disability Index. RESULTS: In group I, statistically significant improvements in pain severity, range of motion except internal and external rotation and SPADI scores were observed compared to baseline scores after the therapy (p0.05. CONCLUSIONS: The Low level laser therapy seems to have no superiority over placebo laser therapy in reducing pain severity, range of motion and functional disability.

  12. Dispersion-tolerant two-photon Michelson interferometer using telecom-band frequency-entangled photon pairs generated by spontaneous parametric downconversion (United States)

    Yoshizawa, Akio; Fukuda, Daiji; Tsuchida, Hidemi; Yamamoto, Noritsugu


    The chromatic group velocity dispersion tolerance of a fiber-optic two-photon interferometer is characterized for telecom-band photon pairs that are frequency entangled. Two indium-gallium-arsenide single-photon detectors are used to record the coincidence counts. A single-wavelength laser diode continuously pumps a periodically poled lithium niobate waveguide of 1-mm length. For near-degenerate spontaneous parametric downconversion, it generates wideband entangled collinear photon pairs. The spectral width of 115.8 nm is centered at 1550 nm. It is restricted by the performance of the single-photon detectors whose efficiency is poor beyond 1610 nm. Using a Michelson interferometer, two-photon interference signals are recorded with and without frequency entanglement. The frequency-entangled photon pairs are found to exhibit dispersion-tolerant two-photon interference, even though the two paths through the interferometer have different group velocity dispersion. The observed two-photon interference signal has a correlation time of 42.7 fs, in good agreement with calculations for a 115.8-nm spectral width. For comparison, results are also presented for photon pairs lacking frequency entanglement.

  13. Fast, High-Precision Readout Circuit for Detector Arrays (United States)

    Rider, David M.; Hancock, Bruce R.; Key, Richard W.; Cunningham, Thomas J.; Wrigley, Chris J.; Seshadri, Suresh; Sander, Stanley P.; Blavier, Jean-Francois L.


    The GEO-CAPE mission described in NASA's Earth Science and Applications Decadal Survey requires high spatial, temporal, and spectral resolution measurements to monitor and characterize the rapidly changing chemistry of the troposphere over North and South Americas. High-frame-rate focal plane arrays (FPAs) with many pixels are needed to enable such measurements. A high-throughput digital detector readout integrated circuit (ROIC) that meets the GEO-CAPE FPA needs has been developed, fabricated, and tested. The ROIC is based on an innovative charge integrating, fast, high-precision analog-to-digital circuit that is built into each pixel. The 128×128-pixel ROIC digitizes all 16,384 pixels simultaneously at frame rates up to 16 kHz to provide a completely digital output on a single integrated circuit at an unprecedented rate of 262 million pixels per second. The approach eliminates the need for off focal plane electronics, greatly reducing volume, mass, and power compared to conventional FPA implementations. A focal plane based on this ROIC will require less than 2 W of power on a 1×1-cm integrated circuit. The ROIC is fabricated of silicon using CMOS technology. It is designed to be indium bump bonded to a variety of detector materials including silicon PIN diodes, indium antimonide (InSb), indium gallium arsenide (In- GaAs), and mercury cadmium telluride (HgCdTe) detector arrays to provide coverage over a broad spectral range in the infrared, visible, and ultraviolet spectral ranges.

  14. Bulk superconductivity at 2.6 K in undoped RbFe{sub 2}As{sub 2}

    Energy Technology Data Exchange (ETDEWEB)

    Bukowski, Z., E-mail: bukowski@phys.ethz.c [Laboratory for Solid State Physics, ETH Zurich, CH-8093 Zurich (Switzerland); Weyeneth, S., E-mail: wstephen@physik.uzh.c [Physik-Institut der Universitaet Zuerich, Winterthurerstrasse 190, CH-8057 Zuerich (Switzerland); Puzniak, R. [Institute of Physics, Polish Academy of Sciences, Aleja Lotnikow 32/46, PL-02-668 Warsaw (Poland); Karpinski, J.; Batlogg, B. [Laboratory for Solid State Physics, ETH Zurich, CH-8093 Zurich (Switzerland)


    The iron arsenide RbFe{sub 2}As{sub 2} with the ThCr{sub 2}Si{sub 2}-type structure is found to be a bulk superconductor with T{sub c}=2.6K. The onset of diamagnetism was used to estimate the upper critical field H{sub c2}(T), resulting in {mu}{sub 0}dH{sub c2}/dT{approx_equal}-1.4T/K and an extrapolated {mu}{sub 0}H{sub c2}(0){approx_equal}2.5T. As a new representative of iron pnictide superconductors, superconducting RbFe{sub 2}As{sub 2} contrasts with BaFe{sub 2}As{sub 2}, where the Fermi level is higher and a magnetic instability is observed. Thus, the solid solution series (Rb, Ba)Fe{sub 2}As{sub 2} is a promising system to study the cross-over from superconductivity to magnetism.

  15. Evaluation of critical materials for five advanced design photovoltaic cells with an assessment of indium and gallium

    Energy Technology Data Exchange (ETDEWEB)

    Watts, R.L.; Gurwell, W.E.; Jamieson, W.M.; Long, L.W.; Pawlewicz, W.T.; Smith, S.A.; Teeter, R.R.


    The objective of this study is to identify potential material supply constraints due to the large-scale deployment of five advanced photovoltaic (PV) cell designs, and to suggest strategies to reduce the impacts of these production capacity limitations and potential future material shortages. This report presents the results of the screening of the five following advanced PV cell designs: polycrystalline silicon, amorphous silicon, cadmium sulfide/copper sulfide frontwall, polycrystalline gallium arsenide MIS, and advanced concentrator-500X. Each of these five cells is screened individually assuming that they first come online in 1991, and that 25 GWe of peak capacity is online by the year 2000. A second computer screening assumes that each cell first comes online in 1991 and that each cell has 5 GWe of peak capacity by the year 2000, so that the total online cpacity for the five cells is 25 GWe. Based on a review of the preliminary basline screening results, suggestions were made for varying such parameters as the layer thickness, cell production processes, etc. The resulting PV cell characterizations were then screened again by the CMAP computer code. Earlier DOE sponsored work on the assessment of critical materials in PV cells conclusively identtified indium and gallium as warranting further investigation as to their availability. Therefore, this report includes a discussion of the future availability of gallium and indium. (WHK)

  16. On the modelling of semi-insulating GaAs including surface tension and bulk stresses

    Energy Technology Data Exchange (ETDEWEB)

    Dreyer, W.; Duderstadt, F.


    Necessary heat treatment of single crystal semi-insulating Gallium Arsenide (GaAs), which is deployed in micro- and opto- electronic devices, generate undesirable liquid precipitates in the solid phase. The appearance of precipitates is influenced by surface tension at the liquid/solid interface and deviatoric stresses in the solid. The central quantity for the description of the various aspects of phase transitions is the chemical potential, which can be additively decomposed into a chemical and a mechanical part. In particular the calculation of the mechanical part of the chemical potential is of crucial importance. We determine the chemical potential in the framework of the St. Venant-Kirchhoff law which gives an appropriate stress/strain relation for many solids in the small strain regime. We establish criteria, which allow the correct replacement of the St. Venant-Kirchhoff law by the simpler Hooke law. The main objectives of this study are: (i) We develop a thermo-mechanical model that describes diffusion and interface motion, which both are strongly influenced by surface tension effects and deviatoric stresses. (ii) We give an overview and outlook on problems that can be posed and solved within the framework of the model. (iii) We calculate non-standard phase diagrams, i.e. those that take into account surface tension and non-deviatoric stresses, for GaAs above 786 C, and we compare the results with classical phase diagrams without these phenomena. (orig.)

  17. Electrolytic arsenic removal for recycling of washing solutions in a remediation process of CCA-treated wood. (United States)

    Nanseu-Njiki, Charles-Péguy; Alonzo, Véronique; Bartak, Duane; Ngameni, Emmanuel; Darchen, André


    The remediation of chromated copper arsenate or CCA-treated wood is a challenging problem in many countries. In a wet remediation, the recycling of the washing solutions is the key step for a successful process. Within this goal, owing to its solubility and its toxicity, the removal of arsenic from washing solution is the most difficult process. The efficiency of arsenic removal from As(III) solutions by electrolysis was investigated in view of the recycling of acidic washing solutions usable in the remediation of CCA-treated wood. Electrochemical reduction of As(III) is irreversible and thus difficult to perform at carbon electrodes. However the electrolytic extraction of arsenic can be performed by the concomitant reduction of the cupric cation and arsenite anion. The cathodic deposits obtained by controlled potential electrolysis were analyzed by X-ray diffraction (XRD) and energy dispersive X-ray microanalysis. XRD diffraction data indicated that these deposits were mixtures of copper and copper arsenides Cu(3)As and Cu(5)As(2). Electrolysis was carried out in an undivided cell with graphite cathode and copper anode, under a controlled nitrogen atmosphere. The evolution of arsine gas AsH(3) was not observed under these conditions.

  18. Physical and magnetic properties of LaFe0.6Sb2 (United States)

    Misuraca, Jennifer; Grose, J. E.; Simonson, J. W.; Marques, C.; Liu, J.; Smith, G.; Puri, A.; Hassinger, J.; Aronson, M. C.


    Currently, there is a tremendous effort to grow and characterize new iron pnictide materials with the hopes of discovering the next set of novel high temperature superconductors. The previous research has been focused on iron phosphides and arsenides, with relatively little work being done on the next heavier pnictogen, antimony. In this work, single crystals of the layered iron pnictide LaFe0.6Sb2 have been grown with the ZrCuSi2 structure with vacancies on the Fe sites as determined via x-ray diffraction and energy-dispersive x-ray spectroscopy. The DC magnetization, resistivity, and heat capacity have been measured in a range of temperatures between 300 K and 0.5 K. The susceptibility is small and shows very little anisotropy; there is a maximum at 265 K and we see no Curie-Weiss-like behavior from room temperature down to 1.8 K. This material is a good metal whose resistivity decreases by a factor of 1.4 from 300 K to 0.5 K and we see Fermi liquid-like behavior from 7 K to 20 K. Although there is no evidence of bulk superconductivity down to 0.5 K in this undoped material, a large Sommerfeld coefficient of 50 mJ/(mol Fe) K2 suggests that this metal is very strongly correlated. Research supported by a DOD National Security Science and Engineering Faculty Fellowship via the AFOSR.

  19. Temperature dependence of the band gap of GaSb{sub 1−x}Bi{sub x} alloys with 0 < x ≤ 0.042 determined by photoreflectance

    Energy Technology Data Exchange (ETDEWEB)

    Kopaczek, J.; Misiewicz, J. [Institute of Physics, Wrocław University of Technology, Wybrzeże Wyspiańskiego 27, 50-370 Wrocław (Poland); Kudrawiec, R., E-mail: [Institute of Physics, Wrocław University of Technology, Wybrzeże Wyspiańskiego 27, 50-370 Wrocław (Poland); Material Sciences Division, Lawrence Berkeley National Laboratory, 1 Cyclotron Road, Berkeley, California 94720 (United States); Linhart, W. M.; Rajpalke, M. K.; Veal, T. D. [Stephenson Institute for Renewable Energy and Department of Physics, School of Physical Sciences, University of Liverpool, Liverpool L69 7ZF (United Kingdom); Yu, K. M. [Material Sciences Division, Lawrence Berkeley National Laboratory, 1 Cyclotron Road, Berkeley, California 94720 (United States); Jones, T. S.; Ashwin, M. J. [Department of Chemistry, University of Warwick, Coventry CV4 7AL (United Kingdom)


    GaSb{sub 1−x}Bi{sub x} layers with 0 < x ≤ 0.042 have been studied by photoreflectance in 15–290 K temperature range. We found that due to the incorporation of Bi atoms into the GaSb host, the E{sub 0} band gap-related transition redshifts (∼30 meV per 1% Bi) and significantly broadens. The shift of the E{sub 0} transition in the temperature range 10–270 K has been found to be ∼70 meV, very similar to the energy shift in GaSb over the same temperature range. We analyzed the energy and broadening of the E{sub 0} transition using the Varshni and Bose-Einstein formulas and found that the Varshni and Bose-Einstein parameters of GaSb{sub 1−x}Bi{sub x} are similar to those of GaSb. Moreover we concluded that the inhomogeneities in GaSb{sub 1−x}Bi{sub x} alloys is less important than in dilute bismide arsenides since Bi atoms are more similar to Sb atoms (in electronegativities and ionic sizes)

  20. New VLSI smart sensor for collision avoidance inspired by insect vision (United States)

    Abbott, Derek; Moini, Alireza; Yakovleff, Andre; Nguyen, X. Thong; Blanksby, Andrew; Kim, Gyudong; Bouzerdoum, Abdesselam; Bogner, Robert E.; Eshraghian, Kamran


    An analog VLSI implementation of a smart microsensor that mimics the early visual processing stage in insects is described with an emphasis on the overall concept and the front- end detection. The system employs the `smart sensor' paradigm in that the detectors and processing circuitry are integrated on the one chip. The integrated circuit is composed of sixty channels of photodetectors and parallel processing elements. The photodetection circuitry includes p-well junction diodes on a 2 micrometers CMOS process and a logarithmic compression to increase the dynamic range of the system. The future possibility of gallium arsenide implementation is discussed. The processing elements behind each photodetector contain a low frequency differentiator where subthreshold design methods have been used. The completed IC is ideal for motion detection, particularly collision avoidance tasks, as it essentially detects distance, speed & bearing of an object. The Horridge Template Model for insect vision has been directly mapped into VLSI and therefore the IC truly exploits the beauty of nature in that the insect eye is so compact with parallel processing, enabling compact motion detection without the computational overhead of intensive imaging, full image extraction and interpretation. This world-first has exciting applications in the areas of automobile anti- collision, IVHS, autonomous robot guidance, aids for the blind, continuous process monitoring/web inspection and automated welding, for example.