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Sample records for arsenide junction-field-effect transistors

  1. Electrical detection of the biological interaction of a charged peptide via gallium arsenide junction-field-effect transistors

    OpenAIRE

    Lee, Kangho; Nair, Pradeep R.; Alam, Muhammad A.; Janes, David B.; Wampler, Heeyeon P; Zemlyanov, Dmitry; Ivanisevic, Albena

    2008-01-01

    GaAs junction-field-effect transistors (JFETs) are utilized to achieve label-free detection of biological interaction between a probe transactivating transcriptional activator (TAT) peptide and the target trans-activation-responsive (TAR) RNA. The TAT peptide is a short sequence derived from the human immunodeficiency virus-type 1 TAT protein. The GaAs JFETs are modified with a mixed adlayer of 1-octadecanethiol (ODT) and TAT peptide, with the ODT passivating the GaAs surface from polar ions ...

  2. Electrical detection of the biological interaction of a charged peptide via gallium arsenide junction-field-effect transistors

    Science.gov (United States)

    Lee, Kangho; Nair, Pradeep R.; Alam, Muhammad A.; Janes, David B.; Wampler, Heeyeon P.; Zemlyanov, Dmitry Y.; Ivanisevic, Albena

    2008-06-01

    GaAs junction-field-effect transistors (JFETs) are utilized to achieve label-free detection of biological interaction between a probe transactivating transcriptional activator (TAT) peptide and the target trans-activation-responsive (TAR) RNA. The TAT peptide is a short sequence derived from the human immunodeficiency virus-type 1 TAT protein. The GaAs JFETs are modified with a mixed adlayer of 1-octadecanethiol (ODT) and TAT peptide, with the ODT passivating the GaAs surface from polar ions in physiological solutions and the TAT peptide providing selective binding sites for TAR RNA. The devices modified with the mixed adlayer exhibit a negative pinch-off voltage (VP) shift, which is attributed to the fixed positive charges from the arginine-rich regions in the TAT peptide. Immersing the modified devices into a TAR RNA solution results in a large positive VP shift (>1 V) and a steeper subthreshold slope (˜80 mV/decade), whereas "dummy" RNA induced a small positive VP shift (˜0.3 V) without a significant change in subthreshold slopes (˜330 mV/decade). The observed modulation of device characteristics is analyzed with analytical modeling and two-dimensional numerical device simulations to investigate the electronic interactions between the GaAs JFETs and biological molecules.

  3. Graphene junction field-effect transistor

    Science.gov (United States)

    Ou, Tzu-Min; Borsa, Tomoko; van Zeghbroeck, Bart

    2014-03-01

    We have demonstrated for the first time a novel graphene transistor gated by a graphene/semiconductor junction rather than an insulating gate. The transistor operates much like a semiconductor junction Field Effect Transistor (jFET) where the depletion layer charge in the semiconductor modulates the mobile charge in the channel. The channel in our case is the graphene rather than another semiconductor layer. An increased reverse bias of the graphene/n-silicon junction increases the positive charge in the depletion region and thereby reduces the total charge in the graphene. We fabricated individual graphene/silicon junctions as well as graphene jFETs (GjFETs) on n-type (4.5x1015 cm-3) silicon with Cr/Au electrodes and 3 μm gate length. As a control device, we also fabricated back-gated graphene MOSFETs using a 90nm SiO2 on a p-type silicon substrate (1019 cm-3) . The graphene was grown by APCVD on copper foil and transferred with PMMA onto the silicon substrate. The GjFET exhibited an on-off ratio of 3.75, an intrinsic graphene doping of 1.75x1012 cm-2, compared to 1.17x1013 cm-2 in the MOSFET, and reached the Dirac point at 13.5V. Characteristics of the junctions and transistors were measured as a function of temperature and in response to light. Experimental data and a comparison with simulations will be presented.

  4. A novel 10-nm physical gate length double-gate junction field effect transistor

    Institute of Scientific and Technical Information of China (English)

    Hou Xiao-Yu; Huang Ru; Chen Gang; Liu Sheng; Zhang Xing; Yu Bin; Wang Yang-Yuan

    2008-01-01

    A novel double-gate (DG) junction field effect transistor (JFET) with depletion operation mode is proposed in this paper.Compared with the conventional DG MOSFET,the novel DG JFET can achieve excellent performance with square body design,which relaxes the requirement on silicon film thickness of DG devices.Moreover,due to the structural symmetry,both p-type and n-type devices can be realized on exactly the same structure,which greatly simplifies integration.It can reduce the delay by about 60% in comparison with the conventional DG MOSFETs.

  5. Fabrication and characterization of GaN junction field effect transistors

    Energy Technology Data Exchange (ETDEWEB)

    Zhang, L.; Lester, L.F.; Baca, A.G.; Shul, R.J.; Chang, P.C.; Willison, C.L.; Mishra, U.K.; Denbaars, S.P.; Zolper, J.C.

    2000-01-11

    Junction field effect transistors (JFET) were fabricated on a GaN epitaxial structure grown by metal organic chemical vapor deposition. The DC and microwave characteristics, as well as the high temperature performance of the devices were studied. These devices exhibited excellent pinch-off and a breakdown voltage that agreed with theoretical predictions. An extrinsic transconductance (g{sub m}) of 48 mS/mm was obtained with a maximum drain current (I{sub D}) of 270 mA/mm. The microwave measurement showed an f{sub T} of 6 GHz and an f{sub max} of 12 GHz. Both the I{sub D} and the g{sub m} were found to decrease with increasing temperature, possibly due to lower electron mobility at elevated temperatures. These JFETs exhibited a significant current reduction after a high drain bias was applied, which was attributed to a partially depleted channel caused by trapped electrons in the semi-insulating GaN buffer layer.

  6. Applications, Prospects and Challenges of Silicon Carbide Junction Field Effect Transistor (SIC JFET

    Directory of Open Access Journals (Sweden)

    Frederick Ojiemhende Ehiagwina

    2016-09-01

    Full Text Available Properties of Silicon Carbide Junction Field Effect Transistor (SiC JFET such as high switching speed, low forward voltage drop and high temperature operation have attracted the interest of power electronic researchers and technologists, who for many years developed devices based on Silicon (Si.  A number of power system Engineers have made efforts to develop more robust equipment including circuits or modules with higher power density. However, it was realized that several available power semiconductor devices were approaching theoretical limits offered by Si material with respect to capability to block high voltage, provide low on-state voltage drop and switch at high frequencies. This paper presents an overview of the current applications of SiC JFET in circuits such as inverters, rectifiers and amplifiers. Other areas of application reviewed include; usage of the SiC JFET in pulse signal circuits and boost converters. Efforts directed toward mitigating the observed increase in electromagnetic interference were also discussed. It also presented some areas for further research, such as having more applications of SiC JFET in harsh, high temperature environment. More work is needed with regards to SiC JFET drivers so as to ensure stable and reliable operation, and reduction in the prices of SiC JFETs through mass production by industries.

  7. Low-Frequency Noise Characterization of Ultra-shallow Gate N-channel Junction Field Effect Transistors

    NARCIS (Netherlands)

    Piccolo, G.; Sarubbi, F.; Vandamme, L.J.K.; Macucci, M.; Scholtes, T.L.M.; Nanver, L.K.

    2007-01-01

    A recently developed technique for ultra shallow pn junction formation has been applied for the fabrication of ring-gate n-channel junction field effect devices (JFET) devices. Several different geometries, gate formation parameters and channel doping profiles have been realized and characterized wi

  8. Characterization, Modeling and Design Parameters Identification of Silicon Carbide Junction Field Effect Transistor for Temperature Sensor Applications

    Directory of Open Access Journals (Sweden)

    Sofiane Khachroumi

    2010-01-01

    Full Text Available Sensor technology is moving towards wide-band-gap semiconductors providing high temperature capable devices. Indeed, the higher thermal conductivity of silicon carbide, (three times more than silicon, permits better heat dissipation and allows better cooling and temperature management. Though many temperature sensors have already been published, little endeavours have been invested in the study of silicon carbide junction field effect devices (SiC-JFET as a temperature sensor. SiC-JFETs devices are now mature enough and it is close to be commercialized. The use of its specific properties versus temperatures is the major focus of this paper. The SiC-JFETs output current-voltage characteristics are characterized at different temperatures. The saturation current and its on-resistance versus temperature are successfully extracted. It is demonstrated that these parameters are proportional to the absolute temperature. A physics-based model is also presented. Relationships between on-resistance and saturation current versus temperature are introduced. A comparative study between experimental data and simulation results is conducted. Important to note, the proposed model and the experimental results reflect a successful agreement as far as a temperature sensor is concerned.

  9. Indium arsenide nanowire field-effect transistors for pH and biological sensing

    Energy Technology Data Exchange (ETDEWEB)

    Upadhyay, S.; Krogstrup, P.; Nygård, J., E-mail: nygard@nbi.dk [Center for Quantum Devices and Nanoscience Center, Niels Bohr Institute, University of Copenhagen, Universitetsparken 5, DK-2100 Copenhagen (Denmark); Frederiksen, R.; Lloret, N.; Martinez, K. L. [Bio-Nanotechnology and Nanomedicine Laboratory, Department of Chemistry and Nanoscience Center, University of Copenhagen, Universitetsparken 5, DK-2100 Copenhagen (Denmark); De Vico, L.; Jensen, J. H. [Department of Chemistry, University of Copenhagen, Universitetsparken 5, DK-2100 Copenhagen (Denmark)

    2014-05-19

    Indium Arsenide is a high mobility semiconductor with a surface electron accumulation layer that allows ohmic electrical contact to metals. Here, we present nanowire devices based on this material as a platform for chemical and biological sensing. The sensing principle involves the binding of a charged species at the sensor surface transduced via field effect into a change in current flowing through the sensor. We show the sensitivity of the platform to the H{sup +} ion concentration in solution as proof of principle and demonstrate the sensitivity to larger charged protein species. The sensors are highly reproducible and reach a detection limit of 10 pM for Avidin.

  10. Hot-Electron Degradation of Gallium Arsenide Metal-Semiconductor Field-Effect Transistors.

    Science.gov (United States)

    Tkachenko, Yevgeniy A.

    1995-01-01

    The physical mechanism of gradual degradation of GaAs MESFETs during RF overdrive is investigated in detail. A hot-electron effect was found responsible for this so-called "power slump" problem. Hot electrons produced by a large drain-gate voltage swing, tunnel from the MESFET channel and get trapped in SiN. These trapped electrons (i) increase surface depletion, hence reduce maximum channel current, transconductance and transistor gain, (ii) increase knee voltage through an increase in series channel resistance, (iii) relax gate-drain field distribution, thereby suppressing avalanche breakdown, (iv) decrease gate-drain capacitance, hence rm S_{22} under open-channel condition, and (v) increase surface leakage through trap hopping in SiN. The damage to SiN can only be partially recovered by deep UV illumination or 200^circrm C anneal. The evidence supports that trapping occurs in the bulk SiN, instead of at the GaAs/SiN interface. The possible chemical reaction responsible for this trap formation is breaking of the Si-H bond in SiN. An analytical theory of hot-electron effects, which combines hot-electron trapping with gate-drain breakdown and pinched-channel electro-luminescence, was developed and verified using experimental data and numerical simulations. Based on this theory, the rate of hot electron trapping was obtained and the threshold energy for trap formation was determined. The square-root time dependence given by the theory and the threshold energy of 1.9 eV were found consistent with gate current and electro-luminescence measurements. Numerical analysis was consistent with a trap density of the order of 5times10^{12}/rm cm^2 over a distance of approximately 0.1 murm m from the gate toward the drain, and it predicted the experimentally observed open-channel current reduction and gate-drain field relaxation. The spatial distribution of trapped electrons was directly observed by a novel high-voltage electron-beam-induced -current imaging technique. It

  11. Transistors

    CERN Document Server

    Kendall, E J M

    2013-01-01

    Transistors covers the main thread of transistor development. This book is organized into 2 parts encompassing 19, and starts with an overview of the semi-conductor physics pertinent to the understanding of transistors, as well as features and applications of the point contact devices and junction devices. The subsequent part deals with the modulation of conductance of thin films of conductors by surface charges, the metal-semi conductor, and the semi-conductor triode. These topics are followed by discussions on the nature of the forward current, physical principles in transistor, the hole inj

  12. Wide-range and fast thermally-tunable silicon photonic microring resonators using the junction field effect.

    Science.gov (United States)

    Wang, Xiaoxi; Lentine, Anthony; DeRose, Christopher; Starbuck, Andrew L; Trotter, Douglas; Pomerene, Andrew; Mookherjea, Shayan

    2016-10-03

    Tunable silicon microring resonators with small, integrated micro-heaters which exhibit a junction field effect were made using a conventional silicon-on-insulator (SOI) photonic foundry fabrication process. The design of the resistive tuning section in the microrings included a "pinched" p-n junction, which limited the current at higher voltages and inhibited damage even when driven by a pre-emphasized voltage waveform. Dual-ring filters were studied for both large (>4.9 THz) and small (850 GHz) free-spectral ranges. Thermal red-shifting was demonstrated with microsecond-scale time constants, e.g., a dual-ring filter was tuned over 25 nm in 0.6 μs 10%-90% transition time, and with efficiency of 3.2 μW/GHz.

  13. Gallium Arsenide Photocathode Development

    Science.gov (United States)

    1975-10-01

    r ~\\ 1 1 AD-A018 619 ■ i I 1 GALLIUM ARSENIDE PHOTOCATHODE DEVELOPMENT I Terry Roach, et al 1 1 ■f EPSCO ...aiwiiwnHWlffl’Wip m, «swwerf^MW^S’ GALLIUM ARSENIDE PHOTOCATHODE DEVELOPMENT T. J. Roach Bianca Contractor: EPSCO Laboratories Contract Number: F08606...PHOTOCATHODE DEVELOPMENT 7. AUTHORfaJ T. Roach J. Bianca t. PERFORMING ORGANIZATION NAME AND AOORESS EPSCO Laboratories 227 High Ridge Road Stauford CT

  14. Spin Injection in Indium Arsenide

    Directory of Open Access Journals (Sweden)

    Mark eJohnson

    2015-08-01

    Full Text Available In a two dimensional electron system (2DES, coherent spin precession of a ballistic spin polarized current, controlled by the Rashba spin orbit interaction, is a remarkable phenomenon that’s been observed only recently. Datta and Das predicted this precession would manifest as an oscillation in the source-drain conductance of the channel in a spin-injected field effect transistor (Spin FET. The indium arsenide single quantum well materials system has proven to be ideal for experimental confirmation. The 2DES carriers have high mobility, low sheet resistance, and high spin orbit interaction. Techniques for electrical injection and detection of spin polarized carriers were developed over the last two decades. Adapting the proposed Spin FET to the Johnson-Silsbee nonlocal geometry was a key to the first experimental demonstration of gate voltage controlled coherent spin precession. More recently, a new technique measured the oscillation as a function of channel length. This article gives an overview of the experimental phenomenology of the spin injection technique. We then review details of the application of the technique to InAs single quantum well (SQW devices. The effective magnetic field associated with Rashba spin-orbit coupling is described, and a heuristic model of coherent spin precession is presented. The two successful empirical demonstrations of the Datta Das conductance oscillation are then described and discussed.

  15. Strategic Review of Arsenide, Phosphide and Nitride MOSFETs

    Directory of Open Access Journals (Sweden)

    Gourab Dutta

    2011-01-01

    Full Text Available Metal oxide semiconductor field effect transistor used as an amplifier and switch uses Si primarily as a channel material for its very stable oxide SiO2. In-spite of many advantages there are some restrictions for Si MOS, so the world is approaching towards compound semiconductor for higher frequency and current. The development of compound semiconductor metal oxide semiconductor is also facing critical problems due to the lack of availability of proper gate oxide material. Research is being conducted on arsenide and phosphide metal oxide semiconductor field effect transistor. Nitride channel MOS are in focus due to their high band gap, high current and high temperature uses.

  16. Long-Term Characterization of 6H-SiC Transistor Integrated Circuit Technology Operating at 500 C

    Science.gov (United States)

    Neudeck, Philip G.; Spry, David J.; Chen, Liang-Yu; Chang, Carl W.; Beheim, Glenn M.; Okojie, Robert S.; Evans, Laura J.; Meredith Roger D.; Ferrier, Terry L.; Krasowski, Michael J.; Prokop, Norman F.

    2008-01-01

    NASA has been developing very high temperature semiconductor integrated circuits for use in the hot sections of aircraft engines and for Venus exploration. This paper reports on long-term 500 C electrical operation of prototype 6H-SiC integrated circuits based on epitaxial 6H-SiC junction field effect transistors (JFETs). As of this writing, some devices have surpassed 4000 hours of continuous 500 C electrical operation in oxidizing air atmosphere with minimal change in relevant electrical parameters.

  17. A miniature microcontroller curve tracing circuit for space flight testing transistors.

    Science.gov (United States)

    Prokop, N; Greer, L; Krasowski, M; Flatico, J; Spina, D

    2015-02-01

    This paper describes a novel miniature microcontroller based curve tracing circuit, which was designed to monitor the environmental effects on Silicon Carbide Junction Field Effect Transistor (SiC JFET) device performance, while exposed to the low earth orbit environment onboard the International Space Station (ISS) as a resident experiment on the 7th Materials on the International Space Station Experiment (MISSE7). Specifically, the microcontroller circuit was designed to operate autonomously and was flown on the external structure of the ISS for over a year. This curve tracing circuit is capable of measuring current vs. voltage (I-V) characteristics of transistors and diodes. The circuit is current limited for low current devices and is specifically designed to test high temperature, high drain-to-source resistance SiC JFETs. The results of each I-V data set are transmitted serially to an external telemetered communication interface. This paper discusses the circuit architecture, its design, and presents example results.

  18. Homo-junction ferroelectric field-effect-transistor memory device using solution-processed lithium-doped zinc oxide thin films

    KAUST Repository

    Nayak, Pradipta K.

    2012-06-22

    High performance homo-junction field-effect transistor memory devices were prepared using solution processed transparent lithium-doped zinc oxide thin films for both the ferroelectric and semiconducting active layers. A highest field-effect mobility of 8.7 cm2/Vs was obtained along with an Ion/Ioff ratio of 106. The ferroelectric thin filmtransistors showed a low sub-threshold swing value of 0.19 V/dec and a significantly reduced device operating voltage (±4 V) compared to the reported hetero-junction ferroelectrictransistors, which is very promising for low-power non-volatile memory applications.

  19. Transistor Effect in Improperly Connected Transistors.

    Science.gov (United States)

    Luzader, Stephen; Sanchez-Velasco, Eduardo

    1996-01-01

    Discusses the differences between the standard representation and a realistic representation of a transistor. Presents an experiment that helps clarify the explanation of the transistor effect and shows why transistors should be connected properly. (JRH)

  20. 6H-SiC Transistor Integrated Circuits Demonstrating Prolonged Operation at 500 C

    Science.gov (United States)

    Neudeck, Philip G.; Spry, David J.; Chen, Liang-Yu; Chang, Carl W.; Beheim, Glenn M.; Okojie, Robert S.; Evans, Laura J.; Meredith, Roger; Ferrier, Terry; Krasowski, Michael J.; Prokop, Norman F.

    2008-01-01

    The NASA Glenn Research Center is developing very high temperature semiconductor integrated circuits (ICs) for use in the hot sections of aircraft engines and for Venus exploration where ambient temperatures are well above the approximately 300 degrees Centigrade effective limit of silicon-on-insulator IC technology. In order for beneficial technology insertion to occur, such transistor ICs must be capable of prolonged operation in such harsh environments. This paper reports on the fabrication and long-term 500 degrees Centigrade operation of 6H-SiC integrated circuits based on epitaxial 6H-SiC junction field effect transistors (JFETs). Simple analog amplifier and digital logic gate ICs have now demonstrated thousands of hours of continuous 500 degrees Centigrade operation in oxidizing air atmosphere with minimal changes in relevant electrical parameters. Electrical characterization and modeling of transistors and circuits at temperatures from 24 degrees Centigrade to 500 degrees Centigrade is also described. Desired analog and digital IC functionality spanning this temperature range was demonstrated without changing the input signals or power supply voltages.

  1. Superconducting transistor

    Science.gov (United States)

    Gray, Kenneth E.

    1979-01-01

    A superconducting transistor is formed by disposing three thin films of superconducting material in a planar parallel arrangement and insulating the films from each other by layers of insulating oxides to form two tunnel junctions. One junction is biased above twice the superconducting energy gap and the other is biased at less than twice the superconducting energy gap. Injection of quasiparticles into the center film by one junction provides a current gain in the second junction.

  2. Ellipsometric study of silicon nitride on gallium arsenide

    Science.gov (United States)

    Alterovitz, S. A.; Bu-Abbud, G. H.; Woollam, J. A.; Liu, D.; Chung, Y.; Langer, D.

    1982-01-01

    A method for optimizing the sensitivity of ellipsometric measurements for thin dielectric films on semiconductors is described in simple physical terms. The technique is demonstrated for the case of sputtered silicon nitride films on gallium arsenide.

  3. Superlattice Intermediate Band Solar Cell on Gallium Arsenide

    Science.gov (United States)

    2015-02-09

    AFRL-RV-PS- AFRL-RV-PS- TR-2015-0048 TR-2015-0048 SUPERLATTICE INTERMEDIATE BAND SOLAR CELL ON GALLIUM ARSENIDE Alexandre Freundlich...SUBTITLE 5a. CONTRACT NUMBER FA9453-13-1-0232 Superlattice Intermediate Band Solar Cell on Gallium Arsenide 5b. GRANT NUMBER 5c. PROGRAM ELEMENT NUMBER...band solar cell incorporating low dimensional structures made with dilute nitrogen alloys of III-V semiconductors is investigated theoretically and

  4. Magnetic bipolar transistor

    OpenAIRE

    Fabian, Jaroslav; Zutic, Igor; Sarma, S. Das

    2003-01-01

    A magnetic bipolar transistor is a bipolar junction transistor with one or more magnetic regions, and/or with an externally injected nonequilibrium (source) spin. It is shown that electrical spin injection through the transistor is possible in the forward active regime. It is predicted that the current amplification of the transistor can be tuned by spin.

  5. Inhalation developmental toxicology studies: Gallium arsenide in mice and rats

    Energy Technology Data Exchange (ETDEWEB)

    Mast, T.J.; Greenspan, B.J.; Dill, J.A.; Stoney, K.H.; Evanoff, J.J.; Rommereim, R.L.

    1990-12-01

    Gallium arsenide is a crystalline compound used extensively in the semiconductor industry. Workers preparing solar cells and gallium arsenide ingots and wafers are potentially at risk from the inhalation of gallium arsenide dust. The potential for gallium arsenide to cause developmental toxicity was assessed in Sprague- Dawley rats and CD-1 (Swiss) mice exposed to 0, 10, 37, or 75 mg/m{sup 3} gallium arsenide, 6 h/day, 7 days/week. Each of the four treatment groups consisted of 10 virgin females (for comparison), and {approx}30 positively mated rats or {approx}24 positively mated mice. Mice were exposed on 4--17 days of gestation (dg), and rats on 4--19 dg. The day of plug or sperm detection was designated as 0 dg. Body weights were obtained throughout the study period, and uterine and fetal body weights were obtained at sacrifice (rats, 20 dg; mice, 18 dg). Implants were enumerated and their status recorded. Live fetuses were sexed and examined for gross, visceral, skeletal, and soft-tissue craniofacial defects. Gallium and arsenic concentrations were determined in the maternal blood and uterine contents of the rats (3/group) at 7, 14, and 20 dg. 37 refs., 11 figs., 30 tabs.

  6. Framework structures of interconnected layers in calcium iron arsenides.

    Science.gov (United States)

    Stürzer, Tobias; Hieke, Christine; Löhnert, Catrin; Nitsche, Fabian; Stahl, Juliane; Maak, Christian; Pobel, Roman; Johrendt, Dirk

    2014-06-16

    The new calcium iron arsenide compounds Ca(n(n+1)/2)(Fe(1-x)M(x))(2+3n)M'(n(n-1)/2)As((n+1)(n+2)/2) (n = 1-3; M = Nb, Pd, Pt; M' = □, Pd, Pt) were synthesized and their crystal structures determined by single-crystal X-ray diffraction. The series demonstrates the structural flexibility of iron arsenide materials, which otherwise prefer layered structures, as is known from the family of iron-based superconductors. In the new compounds, iron arsenide tetrahedral layers are bridged by iron-centered pyramids, giving rise to so far unknown frameworks of interconnected FeAs layers. Channels within the structures are occupied with calcium and palladium or platinum, respectively. Common basic building blocks are identified that lead to a better understanding of the building principles of these structures and their relation to CaFe4As3.

  7. Comparison of 6 Diode and 6 Transistor Mixers Based on Analysis and Measurement

    Directory of Open Access Journals (Sweden)

    J. Ladvánszky

    2016-01-01

    Full Text Available Our goal is to overview semiconductor mixers designed for good large signal performance. Twelve different mixers were compared utilizing pn diodes, bipolar transistors, and/or junction field effect transistors. The main aspect of comparison is the third-order intercept point (IP3, and both circuit analysis and measurement results have been considered. IP3 has been analyzed by the program AWR (NI AWR Design Environment and measured by two-tone test (Keysight Technologies. We provide three ways of improvement of large signal performance: application of a diplexer at the RF port, reduction of DC currents, and exploiting a region of RF input power with infinite IP3. In addition to that, our contributions are several modifications of existing mixers and a new mixer circuit (as illustrated in the figures. It is widely believed that the slope of the third-order intermodulation product versus input power is always greater than that of the first-order product. However, measurement and analysis revealed (as illustrated in the figures that the two lines may be parallel over a broad range of input power, thus resulting in infinite IP3. Mixer knowledge may be useful for a wide range of readers because almost every radio contains at least one mixer.

  8. Field-effect transistors based on cubic indium nitride.

    Science.gov (United States)

    Oseki, Masaaki; Okubo, Kana; Kobayashi, Atsushi; Ohta, Jitsuo; Fujioka, Hiroshi

    2014-02-04

    Although the demand for high-speed telecommunications has increased in recent years, the performance of transistors fabricated with traditional semiconductors such as silicon, gallium arsenide, and gallium nitride have reached their physical performance limits. Therefore, new materials with high carrier velocities should be sought for the fabrication of next-generation, ultra-high-speed transistors. Indium nitride (InN) has attracted much attention for this purpose because of its high electron drift velocity under a high electric field. Thick InN films have been applied to the fabrication of field-effect transistors (FETs), but the performance of the thick InN transistors was discouraging, with no clear linear-saturation output characteristics and poor on/off current ratios. Here, we report the epitaxial deposition of ultrathin cubic InN on insulating oxide yttria-stabilized zirconia substrates and the first demonstration of ultrathin-InN-based FETs. The devices exhibit high on/off ratios and low off-current densities because of the high quality top and bottom interfaces between the ultrathin cubic InN and oxide insulators. This first demonstration of FETs using a ultrathin cubic indium nitride semiconductor will thus pave the way for the development of next-generation high-speed electronics.

  9. STABILIZED TRANSISTOR AMPLIFIER

    Science.gov (United States)

    Noe, J.B.

    1963-05-01

    A temperature stabilized transistor amplifier having a pair of transistors coupled in cascade relation that are capable of providing amplification through a temperature range of - 100 un. Concent 85% F to 400 un. Concent 85% F described. The stabilization of the amplifier is attained by coupling a feedback signal taken from the emitter of second transistor at a junction between two serially arranged biasing resistances in the circuit of the emitter of the second transistor to the base of the first transistor. Thus, a change in the emitter current of the second transistor is automatically corrected by the feedback adjustment of the base-emitter potential of the first transistor and by a corresponding change in the base-emitter potential of the second transistor. (AEC)

  10. Transport-reaction model for defect and carrier behavior within displacement cascades in gallium arsenide

    Energy Technology Data Exchange (ETDEWEB)

    Wampler, William R.; Myers, Samuel Maxwell,

    2014-02-01

    A model is presented for recombination of charge carriers at displacement damage in gallium arsenide, which includes clustering of the defects in atomic displacement cascades produced by neutron or ion irradiation. The carrier recombination model is based on an atomistic description of capture and emission of carriers by the defects with time evolution resulting from the migration and reaction of the defects. The physics and equations on which the model is based are presented, along with details of the numerical methods used for their solution. The model uses a continuum description of diffusion, field-drift and reaction of carriers and defects within a representative spherically symmetric cluster. The initial radial defect profiles within the cluster were chosen through pair-correlation-function analysis of the spatial distribution of defects obtained from the binary-collision code MARLOWE, using recoil energies for fission neutrons. Charging of the defects can produce high electric fields within the cluster which may influence transport and reaction of carriers and defects, and which may enhance carrier recombination through band-to-trap tunneling. Properties of the defects are discussed and values for their parameters are given, many of which were obtained from density functional theory. The model provides a basis for predicting the transient response of III-V heterojunction bipolar transistors to pulsed neutron irradiation.

  11. SiC JFET Transistor Circuit Model for Extreme Temperature Range

    Science.gov (United States)

    Neudeck, Philip G.

    2008-01-01

    A technique for simulating extreme-temperature operation of integrated circuits that incorporate silicon carbide (SiC) junction field-effect transistors (JFETs) has been developed. The technique involves modification of NGSPICE, which is an open-source version of the popular Simulation Program with Integrated Circuit Emphasis (SPICE) general-purpose analog-integrated-circuit-simulating software. NGSPICE in its unmodified form is used for simulating and designing circuits made from silicon-based transistors that operate at or near room temperature. Two rapid modifications of NGSPICE source code enable SiC JFETs to be simulated to 500 C using the well-known Level 1 model for silicon metal oxide semiconductor field-effect transistors (MOSFETs). First, the default value of the MOSFET surface potential must be changed. In the unmodified source code, this parameter has a value of 0.6, which corresponds to slightly more than half the bandgap of silicon. In NGSPICE modified to simulate SiC JFETs, this parameter is changed to a value of 1.6, corresponding to slightly more than half the bandgap of SiC. The second modification consists of changing the temperature dependence of MOSFET transconductance and saturation parameters. The unmodified NGSPICE source code implements a T(sup -1.5) temperature dependence for these parameters. In order to mimic the temperature behavior of experimental SiC JFETs, a T(sup -1.3) temperature dependence must be implemented in the NGSPICE source code. Following these two simple modifications, the Level 1 MOSFET model of the NGSPICE circuit simulation program reasonably approximates the measured high-temperature behavior of experimental SiC JFETs properly operated with zero or reverse bias applied to the gate terminal. Modification of additional silicon parameters in the NGSPICE source code was not necessary to model experimental SiC JFET current-voltage performance across the entire temperature range from 25 to 500 C.

  12. From Classical to Quantum Transistor

    OpenAIRE

    Sanjeev Kumar

    2009-01-01

    In this article the classical transistor and the basic physics underlying the operation of single electron transistor are presented; a brief history of transistor and current technological issues are discussed.

  13. From Classical to Quantum Transistor

    Directory of Open Access Journals (Sweden)

    Sanjeev Kumar

    2009-05-01

    Full Text Available In this article the classical transistor and the basic physics underlying the operation of single electron transistor are presented; a brief history of transistor and current technological issues are discussed.

  14. Microwave Semiconductor Research - Materials, Devices and Circuits and Gallium Arsenide Ballistic Electron Transistors.

    Science.gov (United States)

    1985-04-01

    Eastman, D.W. Woodard, C.E.C. Wood and T.R. AuCoin, DRC , Santa Barbara, CA (June 22-24, 1981). 1. "Experimental Studies of Ballistic Transport in...prepared for publication. These results are fundamental in character and have been published in " highly regarded, refereed technical journals. The...High-Speed Logic", R.A. Sadler and L.F. Eastman, DRC , University of Vermont, Burlington, VT (June 20-22, 1983). 30. "High-Speed Logic at 300 K with Self

  15. A Review of Liquid Phase Epitaxial Grown Gallium Arsenide

    OpenAIRE

    Alexiev, D.; Prokopovich, D. A.; Thomson, S.; Mo, L.; Rosenfeld, A B; Reinhard, M

    2004-01-01

    Liquid phase epitaxy of gallium arsenide (LPE GaAs) has been investigated intensively from the late 1960's to the present and has now a special place in the manufacture of wide band, compound semiconductor radiation detectors. Although this particular process appears to have gained prominence in the last three decades, it is interesting to note that its origins reach back to 1836 when Frankenheim made his first observations. A brief review is presented from a semiconductor applications point ...

  16. Thermal cycling, DLTS, and PEC studies on LEC gallium arsenide. [GaAs:Si

    Energy Technology Data Exchange (ETDEWEB)

    Santhanaraghavan, P. (Anna Univ., Madras (India). Crystal Growth Centre); Sankaranarayanan, K. (Anna Univ., Madras (India). Crystal Growth Centre); Arokiaraj, J. (Anna Univ., Madras (India). Crystal Growth Centre); Anbukumar, S. (Anna Univ., Madras (India). Crystal Growth Centre); Kumar, J. (Anna Univ., Madras (India). Crystal Growth Centre); Ramasamy, P. (Anna Univ., Madras (India). Crystal Growth Centre)

    1994-01-01

    This paper discusses the growth of gallium arsenide single crystals using the LEC technique. The Semi-insulating gallium arsenide was studied. The defect investigations were made by DLTS and etching studies. The variation of deep level concentration along the wafer was estimated using DLTS. The fabrication and efficiency of the PEC Solar cells are also reported. (orig.)

  17. SiC Optically Modulated Field-Effect Transistor

    Science.gov (United States)

    Tabib-Azar, Massood

    2009-01-01

    An optically modulated field-effect transistor (OFET) based on a silicon carbide junction field-effect transistor (JFET) is under study as, potentially, a prototype of devices that could be useful for detecting ultraviolet light. The SiC OFET is an experimental device that is one of several devices, including commercial and experimental photodiodes, that were initially evaluated as detectors of ultraviolet light from combustion and that could be incorporated into SiC integrated circuits to be designed to function as combustion sensors. The ultraviolet-detection sensitivity of the photodiodes was found to be less than desired, such that it would be necessary to process their outputs using high-gain amplification circuitry. On the other hand, in principle, the function of the OFET could be characterized as a combination of detection and amplification. In effect, its sensitivity could be considerably greater than that of a photodiode, such that the need for amplification external to the photodetector could be reduced or eliminated. The experimental SiC OFET was made by processes similar to JFET-fabrication processes developed at Glenn Research Center. The gate of the OFET is very long, wide, and thin, relative to the gates of typical prior SiC JFETs. Unlike in prior SiC FETs, the gate is almost completely transparent to near-ultraviolet and visible light. More specifically: The OFET includes a p+ gate layer less than 1/4 m thick, through which photons can be transported efficiently to the p+/p body interface. The gate is relatively long and wide (about 0.5 by 0.5 mm), such that holes generated at the body interface form a depletion layer that modulates the conductivity of the channel between the drain and the source. The exact physical mechanism of modulation of conductivity is a subject of continuing research. It is known that injection of minority charge carriers (in this case, holes) at the interface exerts a strong effect on the channel, resulting in amplification

  18. One watt gallium arsenide class-E power amplifier with a thin-film bulk acoustic resonator filter embedded in the output network

    Directory of Open Access Journals (Sweden)

    Kyle Holzer

    2015-05-01

    Full Text Available Integration of a class-E power amplifier (PA and a thin-film bulk acoustic wave resonator (FBAR filter is shown to provide high power added efficiency in addition to superior out-of-band spectrum suppression. A discrete gallium arsenide pseudomorphic high-electron-mobility transistor is implemented to operate as a class-E amplifier from 2496 to 2690 MHz. The ACPF7041 compact bandpass FBAR filter is incorporated to replace the resonant LC tank in a traditional class-E PA. To reduce drain voltage stress, the supply choke is replaced by a finite inductance. The fabricated PA provides up to 1 W of output power with a peak power added efficiency (PAE of 58%. The improved out-of-band spectrum filtering is compared to a traditional class-E with discrete LC resonant filtering. Such PAs can be combined with linearisation techniques to reduce out-of-band emissions.

  19. Laser and electron beam processing of silicon and gallium arsenide

    Energy Technology Data Exchange (ETDEWEB)

    Narayan, J.

    1979-10-01

    Laser (photon) and electron beams provide a controlled source of heat by which surface layers of silicon and gallium arsenide can be rapidly melted and cooled with rates exceeding 10/sup 80/C/sec. The melting process has been used to remove displacement damage in ion implanted Si and GaAs, to remove dislocations, loops and precipitates in silicon and to study impurity segregation and solubility limits. The mechanisms associated with various phenomena will be examined. The possible impact of laser and electron beam processing on device technology, particularly with respect to solar cells is discussed.

  20. Silicon nanowire transistors

    CERN Document Server

    Bindal, Ahmet

    2016-01-01

    This book describes the n and p-channel Silicon Nanowire Transistor (SNT) designs with single and dual-work functions, emphasizing low static and dynamic power consumption. The authors describe a process flow for fabrication and generate SPICE models for building various digital and analog circuits. These include an SRAM, a baseband spread spectrum transmitter, a neuron cell and a Field Programmable Gate Array (FPGA) platform in the digital domain, as well as high bandwidth single-stage and operational amplifiers, RF communication circuits in the analog domain, in order to show this technology’s true potential for the next generation VLSI. Describes Silicon Nanowire (SNW) Transistors, as vertically constructed MOS n and p-channel transistors, with low static and dynamic power consumption and small layout footprint; Targets System-on-Chip (SoC) design, supporting very high transistor count (ULSI), minimal power consumption requiring inexpensive substrates for packaging; Enables fabrication of different types...

  1. High Power Switching Transistor

    Science.gov (United States)

    Hower, P. L.; Kao, Y. C.; Carnahan, D. C.

    1983-01-01

    Improved switching transistors handle 400-A peak currents and up to 1,200 V. Using large diameter silicon wafers with twice effective area as D60T, form basis for D7 family of power switching transistors. Package includes npn wafer, emitter preform, and base-contact insert. Applications are: 25to 50-kilowatt high-frequency dc/dc inverters, VSCF converters, and motor controllers for electrical vehicles.

  2. Graphene transistors for bioelectronics

    OpenAIRE

    Hess, Lucas H.; Seifert, Max; Garrido, Jose A.

    2013-01-01

    This paper provides an overview on graphene solution-gated field effect transistors (SGFETs) and their applications in bioelectronics. The fabrication and characterization of arrays of graphene SGFETs is presented and discussed with respect to competing technologies. To obtain a better understanding of the working principle of solution-gated transistors, the graphene-electrolyte interface is discussed in detail. The in-vitro biocompatibility of graphene is assessed by primary neuron cultures....

  3. Lattice parameters guide superconductivity in iron-arsenides

    Science.gov (United States)

    Konzen, Lance M. N.; Sefat, Athena S.

    2017-03-01

    The discovery of superconducting materials has led to their use in technological marvels such as magnetic-field sensors in MRI machines, powerful research magnets, short transmission cables, and high-speed trains. Despite such applications, the uses of superconductors are not widespread because they function much below room-temperature, hence the costly cooling. Since the discovery of Cu- and Fe-based high-temperature superconductors (HTS), much intense effort has tried to explain and understand the superconducting phenomenon. While no exact explanations are given, several trends are reported in relation to the materials basis in magnetism and spin excitations. In fact, most HTS have antiferromagnetic undoped ‘parent’ materials that undergo a superconducting transition upon small chemical substitutions in them. As it is currently unclear which ‘dopants’ can favor superconductivity, this manuscript investigates crystal structure changes upon chemical substitutions, to find clues in lattice parameters for the superconducting occurrence. We review the chemical substitution effects on the crystal lattice of iron-arsenide-based crystals (2008 to present). We note that (a) HTS compounds have nearly tetragonal structures with a-lattice parameter close to 4 Å, and (b) superconductivity can depend strongly on the c-lattice parameter changes with chemical substitution. For example, a decrease in c-lattice parameter is required to induce ‘in-plane’ superconductivity. The review of lattice parameter trends in iron-arsenides presented here should guide synthesis of new materials and provoke theoretical input, giving clues for HTS.

  4. Macroscopic diffusion models for precipitation in crystalline gallium arsenide

    Energy Technology Data Exchange (ETDEWEB)

    Kimmerle, Sven-Joachim Wolfgang

    2009-09-21

    Based on a thermodynamically consistent model for precipitation in gallium arsenide crystals including surface tension and bulk stresses by Dreyer and Duderstadt, we propose two different mathematical models to describe the size evolution of liquid droplets in a crystalline solid. The first model treats the diffusion-controlled regime of interface motion, while the second model is concerned with the interface-controlled regime of interface motion. Our models take care of conservation of mass and substance. These models generalise the well-known Mullins- Sekerka model for Ostwald ripening. We concentrate on arsenic-rich liquid spherical droplets in a gallium arsenide crystal. Droplets can shrink or grow with time but the centres of droplets remain fixed. The liquid is assumed to be homogeneous in space. Due to different scales for typical distances between droplets and typical radii of liquid droplets we can derive formally so-called mean field models. For a model in the diffusion-controlled regime we prove this limit by homogenisation techniques under plausible assumptions. These mean field models generalise the Lifshitz-Slyozov-Wagner model, which can be derived from the Mullins-Sekerka model rigorously, and is well understood. Mean field models capture the main properties of our system and are well adapted for numerics and further analysis. We determine possible equilibria and discuss their stability. Numerical evidence suggests in which case which one of the two regimes might be appropriate to the experimental situation. (orig.)

  5. Transistor-based interface circuitry

    Science.gov (United States)

    Taubman, Matthew S.

    2007-02-13

    Among the embodiments of the present invention is an apparatus that includes a transistor, a servo device, and a current source. The servo device is operable to provide a common base mode of operation of the transistor by maintaining an approximately constant voltage level at the transistor base. The current source is operable to provide a bias current to the transistor. A first device provides an input signal to an electrical node positioned between the emitter of the transistor and the current source. A second device receives an output signal from the collector of the transistor.

  6. Diode, transistor & fet circuits manual

    CERN Document Server

    Marston, R M

    2013-01-01

    Diode, Transistor and FET Circuits Manual is a handbook of circuits based on discrete semiconductor components such as diodes, transistors, and FETS. The book also includes diagrams and practical circuits. The book describes basic and special diode characteristics, heat wave-rectifier circuits, transformers, filter capacitors, and rectifier ratings. The text also presents practical applications of associated devices, for example, zeners, varicaps, photodiodes, or LEDs, as well as it describes bipolar transistor characteristics. The transistor can be used in three basic amplifier configuration

  7. First principles predictions of intrinsic defects in aluminum arsenide, AlAs : numerical supplement.

    Energy Technology Data Exchange (ETDEWEB)

    Schultz, Peter Andrew

    2012-04-01

    This Report presents numerical tables summarizing properties of intrinsic defects in aluminum arsenide, AlAs, as computed by density functional theory. This Report serves as a numerical supplement to the results published in: P.A. Schultz, 'First principles predictions of intrinsic defects in Aluminum Arsenide, AlAs', Materials Research Society Symposia Proceedings 1370 (2011; SAND2011-2436C), and intended for use as reference tables for a defect physics package in device models.

  8. Quantum Thermal Transistor.

    Science.gov (United States)

    Joulain, Karl; Drevillon, Jérémie; Ezzahri, Younès; Ordonez-Miranda, Jose

    2016-05-20

    We demonstrate that a thermal transistor can be made up with a quantum system of three interacting subsystems, coupled to a thermal reservoir each. This thermal transistor is analogous to an electronic bipolar one with the ability to control the thermal currents at the collector and at the emitter with the imposed thermal current at the base. This is achieved by determining the heat fluxes by means of the strong-coupling formalism. For the case of three interacting spins, in which one of them is coupled to the other two, that are not directly coupled, it is shown that high amplification can be obtained in a wide range of energy parameters and temperatures. The proposed quantum transistor could, in principle, be used to develop devices such as a thermal modulator and a thermal amplifier in nanosystems.

  9. The resonant body transistor.

    Science.gov (United States)

    Weinstein, Dana; Bhave, Sunil A

    2010-04-14

    This paper introduces the resonant body transistor (RBT), a silicon-based dielectrically transduced nanoelectromechanical (NEM) resonator embedding a sense transistor directly into the resonator body. Combining the benefits of FET sensing with the frequency scaling capabilities and high quality factors (Q) of internal dielectrically transduced bar resonators, the resonant body transistor achieves >10 GHz frequencies and can be integrated into a standard CMOS process for on-chip clock generation, high-Q microwave circuits, fundamental quantum-state preparation and observation, and high-sensitivity measurements. An 11.7 GHz bulk-mode RBT is demonstrated with a quality factor Q of 1830, marking the highest frequency acoustic resonance measured to date on a silicon wafer.

  10. Quantum thermal transistor

    CERN Document Server

    Joulain, Karl; Ezzahri, Younès; Ordonez-Miranda, Jose

    2016-01-01

    We demonstrate that a thermal transistor can be made up with a quantum system of 3 interacting subsystems , coupled to a thermal reservoir each. This thermal transistor is analogous to an electronic bipolar one with the ability to control the thermal currents at the collector and at the emitter with the imposed thermal current at the base. This is achieved determining the heat fluxes by means of the strong-coupling formalism. For the case of 3 interacting spins, in which one of them is coupled to the other 2, that are not directly coupled, it is shown that high amplification can be obtained in a wide range of energy parameters and temperatures. The proposed quantum transistor could, in principle, be used to develop devices such as a thermal modulator and a thermal amplifier in nano systems.

  11. Temperature dependence of carrier capture by defects in gallium arsenide

    Energy Technology Data Exchange (ETDEWEB)

    Wampler, William R. [Sandia National Lab. (SNL-NM), Albuquerque, NM (United States); Modine, Normand A. [Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)

    2015-08-01

    This report examines the temperature dependence of the capture rate of carriers by defects in gallium arsenide and compares two previously published theoretical treatments of this based on multi phonon emission (MPE). The objective is to reduce uncertainty in atomistic simulations of gain degradation in III-V HBTs from neutron irradiation. A major source of uncertainty in those simulations is poor knowledge of carrier capture rates, whose values can differ by several orders of magnitude between various defect types. Most of this variation is due to different dependence on temperature, which is closely related to the relaxation of the defect structure that occurs as a result of the change in charge state of the defect. The uncertainty in capture rate can therefore be greatly reduced by better knowledge of the defect relaxation.

  12. Methods for forming group III-arsenide-nitride semiconductor materials

    Science.gov (United States)

    Major, Jo S. (Inventor); Welch, David F. (Inventor); Scifres, Donald R. (Inventor)

    2002-01-01

    Methods are disclosed for forming Group III-arsenide-nitride semiconductor materials. Group III elements are combined with group V elements, including at least nitrogen and arsenic, in concentrations chosen to lattice match commercially available crystalline substrates. Epitaxial growth of these III-V crystals results in direct bandgap materials, which can be used in applications such as light emitting diodes and lasers. Varying the concentrations of the elements in the III-V crystals varies the bandgaps, such that materials emitting light spanning the visible spectra, as well as mid-IR and near-UV emitters, can be created. Conversely, such material can be used to create devices that acquire light and convert the light to electricity, for applications such as full color photodetectors and solar energy collectors. The growth of the III-V crystals can be accomplished by growing thin layers of elements or compounds in sequences that result in the overall lattice match and bandgap desired.

  13. Accelerating the life of transistors

    Science.gov (United States)

    Haochun, Qi; Changzhi, Lü; Xiaoling, Zhang; Xuesong, Xie

    2013-06-01

    Choosing small and medium power switching transistors of the NPN type in a 3DK set as the study object, the test of accelerating life is conducted in constant temperature and humidity, and then the data are statistically analyzed with software developed by ourselves. According to degradations of such sensitive parameters as the reverse leakage current of transistors, the lifetime order of transistors is about more than 104 at 100 °C and 100% relative humidity (RH) conditions. By corrosion fracture of transistor outer leads and other failure modes, with the failure truncated testing, the average lifetime rank of transistors in different distributions is extrapolated about 103. Failure mechanism analyses of degradation of electrical parameters, outer lead fracture and other reasons that affect transistor lifetime are conducted. The findings show that the impact of external stress of outer leads on transistor reliability is more serious than that of parameter degradation.

  14. Accelerating the life of transistors

    Institute of Scientific and Technical Information of China (English)

    Qi Haochun; Lü Changzhi; Zhang Xiaoling; Xie Xuesong

    2013-01-01

    Choosing small and medium power switching transistors of the NPN type in a 3DK set as the study object,the test of accelerating life is conducted in constant temperature and humidity,and then the data are statistically analyzed with software developed by ourselves.According to degradations of such sensitive parameters as the reverse leakage current of transistors,the lifetime order of transistors is about more than 104 at 100 ℃ and 100% relative humidity (RH) conditions.By corrosion fracture of transistor outer leads and other failure modes,with the failure truncated testing,the average lifetime rank of transistors in different distributions is extrapolated about 103.Failure mechanism analyses of degradation of electrical parameters,outer lead fracture and other reasons that affect transistor lifetime are conducted.The findings show that the impact of external stress of outer leads on transistor reliability is more serious than that of parameter degradation.

  15. Radiation-hardened transistor and integrated circuit

    Science.gov (United States)

    Ma, Kwok K.

    2007-11-20

    A composite transistor is disclosed for use in radiation hardening a CMOS IC formed on an SOI or bulk semiconductor substrate. The composite transistor has a circuit transistor and a blocking transistor connected in series with a common gate connection. A body terminal of the blocking transistor is connected only to a source terminal thereof, and to no other connection point. The blocking transistor acts to prevent a single-event transient (SET) occurring in the circuit transistor from being coupled outside the composite transistor. Similarly, when a SET occurs in the blocking transistor, the circuit transistor prevents the SET from being coupled outside the composite transistor. N-type and P-type composite transistors can be used for each and every transistor in the CMOS IC to radiation harden the IC, and can be used to form inverters and transmission gates which are the building blocks of CMOS ICs.

  16. Silicon-on-insulator-based high-voltage, high-temperature integrated circuit gate driver for silicon carbide-based power field effect transistors

    Energy Technology Data Exchange (ETDEWEB)

    Tolbert, Leon M [ORNL; Huque, Mohammad A [ORNL; Blalock, Benjamin J [ORNL; Islam, Syed K [ORNL

    2010-01-01

    Silicon carbide (SiC)-based field effect transistors (FETs) are gaining popularity as switching elements in power electronic circuits designed for high-temperature environments like hybrid electric vehicle, aircraft, well logging, geothermal power generation etc. Like any other power switches, SiC-based power devices also need gate driver circuits to interface them with the logic units. The placement of the gate driver circuit next to the power switch is optimal for minimising system complexity. Successful operation of the gate driver circuit in a harsh environment, especially with minimal or no heat sink and without liquid cooling, can increase the power-to-volume ratio as well as the power-to-weight ratio for power conversion modules such as a DC-DC converter, inverter etc. A silicon-on-insulator (SOI)-based high-voltage, high-temperature integrated circuit (IC) gate driver for SiC power FETs has been designed and fabricated using a commercially available 0.8--m, 2-poly and 3-metal bipolar-complementary metal oxide semiconductor (CMOS)-double diffused metal oxide semiconductor (DMOS) process. The prototype circuit-s maximum gate drive supply can be 40-V with peak 2.3-A sourcing/sinking current driving capability. Owing to the wide driving range, this gate driver IC can be used to drive a wide variety of SiC FET switches (both normally OFF metal oxide semiconductor field effect transistor (MOSFET) and normally ON junction field effect transistor (JFET)). The switching frequency is 20-kHz and the duty cycle can be varied from 0 to 100-. The circuit has been successfully tested with SiC power MOSFETs and JFETs without any heat sink and cooling mechanism. During these tests, SiC switches were kept at room temperature and ambient temperature of the driver circuit was increased to 200-C. The circuit underwent numerous temperature cycles with negligible performance degradation.

  17. Design of Indium Arsenide nanowire sensors for pH and biological sensing and low temperature transport through p-doped Indium Arsenide nanowires

    DEFF Research Database (Denmark)

    Upadhyay, Shivendra

    remains the primary material of choice. This research is about investigating Indium Arsenide nanowires as alternative platform for sensing charged species - chemical and biological, in solution. Starting with nanowires grown via molecular beam epitaxy in an ultra-high vacuum chamber, we discuss...

  18. Structural, elastic, electronic properties and stability trends of 1111-like silicide arsenides and germanide arsenides MCuXAs (M = Ti, Zr, Hf; X = Si, Ge) from first principles

    Energy Technology Data Exchange (ETDEWEB)

    Bannikov, V.V.; Shein, I.R. [Institute of Solid State Chemistry, Ural Branch of the Russian Academy of Sciences, 620990 Ekaterinburg (Russian Federation); Ivanovskii, A.L., E-mail: ivanovskii@ihim.uran.ru [Institute of Solid State Chemistry, Ural Branch of the Russian Academy of Sciences, 620990 Ekaterinburg (Russian Federation)

    2012-08-25

    Highlights: Black-Right-Pointing-Pointer Silicide arsenides and germanide arsenides of Ti, Zr, Hf are probed from first principles. Black-Right-Pointing-Pointer Structural, elastic, electronic properties and stability trends are evaluated. Black-Right-Pointing-Pointer Bulk moduli of HfCuSiAs and HfCuGeAs are the largest among all 1111-like phases. Black-Right-Pointing-Pointer Chemical bonding is analyzed. - Abstract: The tetragonal (s.g. I4/nmm; no. 129) silicide arsenide ZrCuSiAs is well known as a structural type of the broad family of so-called 1111-like quaternary phases which includes now more than 150 representatives. These materials demonstrate a rich variety of outstanding physical properties (from p-type transparent semiconductors to high-temperature Fe-based superconductors) and attracted a great interest as promising candidates for a broad range of applications. At the same time, the data about the electronic and elastic properties of the ZrCuSiAs phase itself, as well as of related silicide arsenides and germanide arsenides are still very limited. Here for a series of six isostructural and isoelectronic 1111-like phases which includes both synthesized (ZrCuSiAs, HfCuSiAs, ZrCuGeAs, and HfCuGeAs) and hypothetical (TiCuSiAs and TiCuGeAs) materials, systematical studies of their structural, elastic, electronic properties and stability trends are performed by means of first-principles calculations.

  19. Strategic Review of Arsenide, Phosphide and Nitride MOSFETs

    OpenAIRE

    Gourab Dutta; Palash Das; Partha Mukherjee; Dhrubes Biswas

    2011-01-01

    Metal oxide semiconductor field effect transistor used as an amplifier and switch uses Si primarily as a channel material for its very stable oxide SiO2. In-spite of many advantages there are some restrictions for Si MOS, so the world is approaching towards compound semiconductor for higher frequency and current. The development of compound semiconductor metal oxide semiconductor is also facing critical problems due to the lack of availability of proper gate oxide material. Research is being ...

  20. TRANSISTOR HIGH VOLTAGE POWER SUPPLY

    Science.gov (United States)

    Driver, G.E.

    1958-07-15

    High voltage, direct current power supplies are described for use with battery powered nuclear detection equipment. The particular advantages of the power supply described, are increased efficiency and reduced size and welght brought about by the use of transistors in the circuit. An important feature resides tn the employment of a pair of transistors in an alternatefiring oscillator circuit having a coupling transformer and other circuit components which are used for interconnecting the various electrodes of the transistors.

  1. Graphene Hot-electron Transistors

    OpenAIRE

    Vaziri, Sam

    2016-01-01

    Graphene base transistors (GBTs) have been, recently, proposed to overcome the intrinsic limitations of the graphene field effect transistors (GFETs) and exploit the graphene unique properties in high frequency (HF) applications. These devices utilize single layer graphene as the base material in the vertical hot-electron transistors. In an optimized GBT, the ultimate thinness of the graphene-base and its high conductivity, potentially, enable HF performance up to the THz region.  This thesis...

  2. Junctionless Cooper pair transistor

    Science.gov (United States)

    Arutyunov, K. Yu.; Lehtinen, J. S.

    2017-02-01

    Quantum phase slip (QPS) is the topological singularity of the complex order parameter of a quasi-one-dimensional superconductor: momentary zeroing of the modulus and simultaneous 'slip' of the phase by ±2π. The QPS event(s) are the dynamic equivalent of tunneling through a conventional Josephson junction containing static in space and time weak link(s). Here we demonstrate the operation of a superconducting single electron transistor (Cooper pair transistor) without any tunnel junctions. Instead a pair of thin superconducting titanium wires in QPS regime was used. The current-voltage characteristics demonstrate the clear Coulomb blockade with magnitude of the Coulomb gap modulated by the gate potential. The Coulomb blockade disappears above the critical temperature, and at low temperatures can be suppressed by strong magnetic field.

  3. Mesoscopic photon heat transistor

    DEFF Research Database (Denmark)

    Ojanen, T.; Jauho, Antti-Pekka

    2008-01-01

    We show that the heat transport between two bodies, mediated by electromagnetic fluctuations, can be controlled with an intermediate quantum circuit-leading to the device concept of a mesoscopic photon heat transistor (MPHT). Our theoretical analysis is based on a novel Meir-Wingreen-Landauer-typ......We show that the heat transport between two bodies, mediated by electromagnetic fluctuations, can be controlled with an intermediate quantum circuit-leading to the device concept of a mesoscopic photon heat transistor (MPHT). Our theoretical analysis is based on a novel Meir......-Wingreen-Landauer-type of conductance formula, which gives the photonic heat current through an arbitrary circuit element coupled to two dissipative reservoirs at finite temperatures. As an illustration we present an exact solution for the case when the intermediate circuit can be described as an electromagnetic resonator. We discuss...

  4. Polarization induced doped transistor

    Energy Technology Data Exchange (ETDEWEB)

    Xing, Huili (Grace); Jena, Debdeep; Nomoto, Kazuki; Song, Bo; Zhu, Mingda; Hu, Zongyang

    2016-06-07

    A nitride-based field effect transistor (FET) comprises a compositionally graded and polarization induced doped p-layer underlying at least one gate contact and a compositionally graded and doped n-channel underlying a source contact. The n-channel is converted from the p-layer to the n-channel by ion implantation, a buffer underlies the doped p-layer and the n-channel, and a drain underlies the buffer.

  5. Gallium Arsenide (GaAs) Quantum Photonic Waveguide Circuits

    CERN Document Server

    Wang, Jianwei; Jiang, Pisu; Bonneau, Damien; Engin, Erman; Silverstone, Joshua W; Lermer, Matthias; Beetz, Johannes; Kamp, Martin; Hofling, Sven; Tanner, Michael G; Natarajan, Chandra M; Hadfield, Robert H; Dorenbos, Sander N; Zwiller, Val; O'Brien, Jeremy L; Thompson, Mark G

    2014-01-01

    Integrated quantum photonics is a promising approach for future practical and large-scale quantum information processing technologies, with the prospect of on-chip generation, manipulation and measurement of complex quantum states of light. The gallium arsenide (GaAs) material system is a promising technology platform, and has already successfully demonstrated key components including waveguide integrated single-photon sources and integrated single-photon detectors. However, quantum circuits capable of manipulating quantum states of light have so far not been investigated in this material system. Here, we report GaAs photonic circuits for the manipulation of single-photon and two-photon states. Two-photon quantum interference with a visibility of 94.9 +/- 1.3% was observed in GaAs directional couplers. Classical and quantum interference fringes with visibilities of 98.6 +/- 1.3% and 84.4 +/- 1.5% respectively were demonstrated in Mach-Zehnder interferometers exploiting the electro-optic Pockels effect. This w...

  6. Gallium arsenide pilot line for high performance components

    Science.gov (United States)

    1990-01-01

    The Gallium Arsenide Pilot Line for High Performance Components (Pilot Line III) is to develop a facility for the fabrication of GaAs logic and memory chips. The first thirty months of this contract are now complete, and this report covers the period from March 27 through September 24, 1989. Similar to the PT-2M SRAM function for memories, the six logic circuits of PT-2L and PT-2M have served their functions as stepping stones toward the custom, standard cell, and cell array logic circuits. All but one of these circuits was right first time; the remaining circuit had a layout error due to a bug in the design rule checker that has since been fixed. The working devices all function over the full temperature range from -55 to 125 C. They all comfortably meet the 200 MHz requirement. They do not solidly conform to the required input and output voltage levels, particularly Vih. It is known that these circuits were designed with the older design models and that they came from an era where the DFET thresholds were often not on target.

  7. Surface-enhanced gallium arsenide photonic resonator with a quality factor of six million

    CERN Document Server

    Guha, Biswarup; Cadiz, Fabian; Morgenroth, Laurence; Ulin, Vladimir; Berkovitz, Vladimir; Lemaître, Aristide; Gomez, Carmen; Amo, Alberto; Combrié, Sylvian; Gérard, Bruno; Leo, Giuseppe; Favero, Ivan

    2016-01-01

    Gallium Arsenide and related compound semiconductors lie at the heart of optoelectronics and integrated laser technologies. Shaped at the micro and nano-scale, they allow strong interaction with quantum dots and quantum wells, and promise to result in stunning devices. However gallium arsenide optical structures presently exhibit lower performances than their silicon-based counterparts, notably in nanophotonics where the surface plays a chief role. Here we report on advanced surface control of miniature gallium arsenide optical resonators, using two distinct techniques that produce permanent results. One leads to extend the lifetime of free-carriers and enhance luminescence, while the other strongly reduces surface absorption originating from mid-gap states and enables ultra-low optical dissipation devices. With such surface control, the quality factor of wavelength-sized optical disk resonators is observed to rise up to six million at telecom wavelength, greatly surpassing previous realizations and opening n...

  8. A study of the applicability of gallium arsenide and silicon carbide as aerospace sensor materials

    Science.gov (United States)

    Hurley, John S.

    1990-01-01

    Most of the piezoresistive sensors, to date, are made of silicon and germanium. Unfortunately, such materials are severly restricted in high temperature environments. By comparing the effects of temperature on the impurity concentrations and piezoresistive coefficients of silicon, gallium arsenide, and silicon carbide, it is being determined if gallium arsenide and silicon carbide are better suited materials for piezoresistive sensors in high temperature environments. The results show that the melting point for gallium arsenide prevents it from solely being used in high temperature situations, however, when used in the alloy Al(x)Ga(1-x)As, not only the advantage of the wider energy band gas is obtained, but also the higher desire melting temperature. Silicon carbide, with its wide energy band gap and higher melting temperature suggests promise as a high temperature piezoresistive sensor.

  9. The comparison between gallium arsenide and indium gallium arsenide as materials for solar cell performance using Silvaco application

    Energy Technology Data Exchange (ETDEWEB)

    Zahari, Suhaila Mohd; Norizan, Mohd Natashah; Mohamad, Ili Salwani; Osman, Rozana Aina Maulat; Taking, Sanna [School of Microelectronic Engineering, Universiti Malaysia Perlis, Kampus Pauh Putra, 02600 Arau, Perlis (Malaysia)

    2015-05-15

    The work presented in this paper is about the development of single and multilayer solar cells using GaAs and InGaAs in AM1.5 condition. The study includes the modeling structure and simulation of the device using Silvaco applications. The performance in term of efficiency of Indium Gallium Arsenide (InGaAs) and GaAs material was studied by modification of the doping concentration and thickness of material in solar cells. The efficiency of the GaAs solar cell was higher than InGaAs solar cell for single layer solar cell. Single layer GaAs achieved an efficiency about 25% compared to InGaAs which is only 2.65% of efficiency. For multilayer which includes both GaAs and InGaAs, the output power, P{sub max} was 8.91nW/cm² with the efficiency only 8.51%. GaAs is one of the best materials to be used in solar cell as a based compared to InGaAs.

  10. Magnetoelectric effect in layered structures of amorphous ferromagnetic alloy and gallium arsenide

    Science.gov (United States)

    Bichurin, M. I.; Petrov, V. M.; Leontiev, V. S.; Ivanov, S. N.; Sokolov, O. V.

    2017-02-01

    A paper devotes to theoretical and experimental studying the magnetoelectric interaction in layered structures of amorphous ferromagnetic alloy and single- crystal gallium arsenide. The authors investigated the magnetoelectric effect in the (100) plane of gallium arsenide in the electromechanical resonance range of 200-240 kHz and obtained maximal ME voltage coefficient of 120 V/A at bias field equaled 3.6 kA/m for the direction parallel to the [011] axis. Also the magnetoelectric effect in the (110) and (111) planes is discussed. The results can be used for design of new electronic devices based on the magnetostrictive-semiconductor materials.

  11. High-field phase-diagram of Fe arsenide superconductors

    Energy Technology Data Exchange (ETDEWEB)

    Jo, Y.J.; Jaroszynski, J.; Yamamoto, A.; Gurevich, A.; Riggs, S.C.; Boebinger, G.S.; Larbalestier, D. [National High Magnetic Field Laboratory, Florida State University, Tallahassee-FL 32310 (United States); Wen, H.H. [Institute of Physics, Chinese Academy of Sciences, Beijing 100190 (China); Zhigadlo, N.D.; Katrych, S.; Bukowski, Z.; Karpinski, J. [Laboratory for Solid State Physics, ETH Zuerich, CH-8093 Zuerich (Switzerland); Liu, R.H.; Chen, H.; Chen, X.H. [Hefei National Laboratory for Physical Science a Microscale and Department of Physics, University of Science and Technology of China, Hefei, Anhui 230026 (China); Balicas, L., E-mail: balicas@magnet.fsu.ed [National High Magnetic Field Laboratory, Florida State University, Tallahassee-FL 32310 (United States)

    2009-05-01

    Here, we report an overview of the phase-diagram of single-layered and double-layered Fe arsenide superconductors at high magnetic fields. Our systematic magneto-transport measurements of polycrystalline SmFeAsO{sub 1-x}F{sub x} at different doping levels confirm the upward curvature of the upper critical magnetic field H{sub c2}(T) as a function of temperature T defining the phase boundary between the superconducting and metallic states for crystallites with the ab planes oriented nearly perpendicular to the magnetic field. We further show from measurements on single-crystals that this feature, which was interpreted in terms of the existence of two superconducting gaps, is ubiquitous among both series of single- and double-layered compounds. In all compounds explored by us the zero temperature upper critical field H{sub c2}(0), estimated either through the Ginzburg-Landau or the Werthamer-Helfand-Hohenberg single gap theories, strongly surpasses the weak-coupling Pauli paramagnetic limiting field. This clearly indicates the strong-coupling nature of the superconducting state and the importance of magnetic correlations for these materials. Our measurements indicate that the superconducting anisotropy, as estimated through the ratio of the effective masses gamma = (m{sub c}/m{sub ab}){sup 1/2} for carriers moving along the c-axis and the ab-planes, respectively, is relatively modest as compared to the high-T{sub c} cuprates, but it is temperature, field and even doping dependent. Finally, our preliminary estimations of the irreversibility field H{sub m}(T), separating the vortex-solid from the vortex-liquid phase in the single-layered compounds, indicates that it is well described by the melting of a vortex lattice in a moderately anisotropic uniaxial superconductor.

  12. Progress to a Gallium-Arsenide Deep-Center Laser

    Directory of Open Access Journals (Sweden)

    Janet L. Pan

    2009-10-01

    Full Text Available Although photoluminescence from gallium-arsenide (GaAs deep-centers was first observed in the 1960s, semiconductor lasers have always utilized conduction-to-valence-band transitions. Here we review recent materials studies leading to the first GaAs deep-center laser. First, we summarize well-known properties: nature of deep-center complexes, Franck-Condon effect, hotoluminescence. Second, we describe our recent work: insensitivity of photoluminescence with heating, striking differences between electroluminescence and photoluminescence, correlation between transitions to deep-states and absence of bandgap-emission. Room-temperature stimulated-emission from GaAs deep-centers was observed at low electrical injection, and could be tuned from the bandgap to half-the-bandgap (900–1,600 nm by changing the electrical injection. The first GaAs deep-center laser was demonstrated with electrical injection, and exhibited a threshold of less than 27 mA/cm2 in continuous-wave mode at room temperature at the important 1.54 μm fiber-optic wavelength. This small injection for laser action was explained by fast depopulation of the lower state of the optical transition (fast capture of free holes onto deep-centers, which maintains the population inversion. The evidence for laser action included: superlinear L-I curve, quasi-Fermi level separations satisfying Bernard-Duraffourg’s criterion, optical gains larger than known significant losses, clamping of the optical-emission from lossy modes unable to reach laser action, pinning of the population distribution during laser action.

  13. REGENERATIVE TRANSISTOR AMPLIFIER

    Science.gov (United States)

    Kabell, L.J.

    1958-11-25

    Electrical circults for use in computers and the like are described. particularly a regenerative bistable transistor amplifler which is iurned on by a clock signal when an information signal permits and is turned off by the clock signal. The amplifier porforms the above function with reduced power requirements for the clock signal and circuit operation. The power requirements are reduced in one way by employing transformer coupling which increases the collector circuit efficiency by eliminating the loss of power in the collector load resistor.

  14. Boron, bismuth co-doping of gallium arsenide and other compounds for photonic and heterojunction bipolar transistor devices

    Science.gov (United States)

    Mascarenhas, Angelo

    2015-07-07

    Isoelectronic co-doping of semiconductor compounds and alloys with acceptors and deep donors is sued to decrease bandgap, to increase concentration of the dopant constituents in the resulting alloys, and to increase carrier mobilities lifetimes. For example, Group III-V compounds and alloys, such as GaAs and GaP, are isoelectronically co-doped with, for example, B and Bi, to customize solar cells, and other semiconductor devices. Isoelectronically co-doped Group II-VI compounds and alloys are also included.

  15. Gate-enclosed NMOS transistors

    Institute of Scientific and Technical Information of China (English)

    Fan Xue; Li Ping; Li Wei; Zhang Bin; Xie Xiaodong; Wang Gang; Hu Bin; Zhai Yahong

    2011-01-01

    In order to quantitatively compare the design cost and performance of various gate styles,NMOS transistors with two-edged,annular and ring gate layouts were designed and fabricated by a commercial 0.35 μm CMOS process.By comparing the minimum W/L ratios and transistor areas,it was found that either the annular layout or its ring counterpart incurs a higher area penalty that depends on the W/L ratio of the transistor to be designed.Furthermore,by comparing the output and transfer characteristics of the transistors and analyzing the popular existing methods for extracting the effective W/L ratio,it was shown that the mid-line approximation for annular NMOS could incur an error of more than 10%.It was also demonstrated that the foundry-provided extraction tool needs significant adaptation when being applied to the enclosed-gate transistors,since it is targeted only toward the two-edged transistor.A simple approach for rough extraction of the W/L ratio for the ring-gate NMOS was presented and its effectiveness was confirmed by the experimental results with an error up to 8%.

  16. Determination of the Peltier coefficient for gallium arsenide in a vertical Bridgman furnace

    Science.gov (United States)

    Wiegel, Michaela E. K.; Matthiesen, David H.

    2011-10-01

    The Peltier coefficient for gallium arsenide solid in contact with its melt was experimentally determined. Selenium doped gallium arsenide samples were hermetically sealed in a fused quartz ampoule and processed in a vertical Bridgman furnace. During the translation period seven sequences of current-on and current-off periods were processed into the solidifying crystal. An axial slice was mechanochemically polished and then etched. Photomicrographs of the slice were taken with differential interference contrast microscopy and were used to measure the thickness of the current-on and current-off layers. These results were used to calculate growth rates from which the Peltier coefficient was calculated. An average value of 0.107±0.015 V was determined. The values calculated from the different sequences were in excellent agreement with each other even though the sequences had different current densities, current-on durations, and current-on to current-off ratios.

  17. Passivated ambipolar black phosphorus transistors

    Science.gov (United States)

    Yue, Dewu; Lee, Daeyeong; Jang, Young Dae; Choi, Min Sup; Nam, Hye Jin; Jung, Duk-Young; Yoo, Won Jong

    2016-06-01

    We report the first air-passivated ambipolar BP transistor formed by applying benzyl viologen, which serves as a surface charge transfer donor for BP flakes. The passivated BP devices exhibit excellent stability under both an ambient atmosphere and vacuum; their transistor performance is maintained semi-permanently. Unlike their intrinsic p-type properties, passivated BP devices present advantageous ambipolar properties with much higher electron mobility up to ~83 cm2 V-1 s-1 from 2-terminal measurement at 300 K, compared to other reported studies on n-type BP transistors. On the basis of the n-type doping effect that originated from benzyl viologen, we also systematically investigated the BP thickness dependence of our devices on electrical properties, in which we found the best electron transport performance to be attained when an ~10 nm thick BP flake was used.We report the first air-passivated ambipolar BP transistor formed by applying benzyl viologen, which serves as a surface charge transfer donor for BP flakes. The passivated BP devices exhibit excellent stability under both an ambient atmosphere and vacuum; their transistor performance is maintained semi-permanently. Unlike their intrinsic p-type properties, passivated BP devices present advantageous ambipolar properties with much higher electron mobility up to ~83 cm2 V-1 s-1 from 2-terminal measurement at 300 K, compared to other reported studies on n-type BP transistors. On the basis of the n-type doping effect that originated from benzyl viologen, we also systematically investigated the BP thickness dependence of our devices on electrical properties, in which we found the best electron transport performance to be attained when an ~10 nm thick BP flake was used. Electronic supplementary information (ESI) available: Transfer characteristics of BP field effect transistors (BV1-BV4) (Fig. S1 and S2 and Table S1); output characteristics of BP field effect transistors in different directions (Fig. S3

  18. Logarithmic current-measuring transistor circuits

    DEFF Research Database (Denmark)

    Højberg, Kristian Søe

    1967-01-01

    Describes two transistorized circuits for the logarithmic measurement of small currents suitable for nuclear reactor instrumentation. The logarithmic element is applied in the feedback path of an amplifier, and only one dual transistor is used as logarithmic diode and temperature compensating...... transistor. A simple one-amplifier circuit is compared with a two-amplifier system. The circuits presented have been developed in connexion with an amplifier using a dual m.o.s. transistor input stage with diode-protected gates....

  19. An advanced space photovoltaic concentrator array using Fresnel lenses, gallium arsenide cells, and prismatic cell covers

    Science.gov (United States)

    O'Neill, Mark J.; Piszczor, Michael F.

    1988-01-01

    The current status of a space concentrator array which uses refractive optics, gallium arsenide cells, and prismatic cell covers to achieve excellent performance at a very low array mass is documented. The prismatically covered cells have established records for space cell performance (24.2 percent efficient at 100 AM0 suns and 25 C) and terrestrial single-junction cell performance (29.3 percent efficient at 200 AM1.5 suns and 25 C).

  20. Probing the electronic properties of p-doped gallium arsenide nanowires

    OpenAIRE

    2014-01-01

    Probing the electronic properties of nm-scaled object is a challenge but is required for doping optimalization and using the nm-scaled objects as building blocks in future devices. In the present study, electron beam induced deposition of platinum was used for contacting and creating two-point probes to beryllium-doped gallium arsenide nanowires. Thereby, a metal-semiconductor-metal structure with rectifying metal-semiconductor contact characteristic is formed (i.e. back-to-back Schottky diod...

  1. Two years of on-orbit gallium arsenide performance from the LIPS solar cell panel experiment

    Science.gov (United States)

    Francis, R. W.; Betz, F. E.

    1985-01-01

    The LIPS on-orbit performance of the gallium arsenide panel experiment was analyzed from flight operation telemetry data. Algorithms were developed to calculate the daily maximum power and associated solar array parameters by two independent methods. The first technique utilizes a least mean square polynomial fit to the power curve obtained with intensity and temperature corrected currents and voltages; whereas, the second incorporates an empirical expression for fill factor based on an open circuit voltage and the calculated series resistance. Maximum power, fill factor, open circuit voltage, short circuit current and series resistance of the solar cell array are examined as a function of flight time. Trends are analyzed with respect to possible mechanisms which may affect successive periods of output power during 2 years of flight operation. Degradation factors responsible for the on-orbit performance characteristics of gallium arsenide are discussed in relation to the calculated solar cell parameters. Performance trends and the potential degradation mechanisms are correlated with existing laboratory and flight data on both gallium arsenide and silicon solar cells for similar environments.

  2. Electrostatics of Silicon Nano Transistor

    Directory of Open Access Journals (Sweden)

    Lalit Singh

    2011-01-01

    Full Text Available Nano Transistor represents a unique system for exploring physical phenomena pertaining to charge transport at the nano scale and is expected to play a critical role in future evolution of electronic and optoelectronic devices. This paper summarizes some of the essential electrostatics of nano Metal Oxide Semiconductor Field effect Transistor (MOSFET and their electrical properties. Though the general focus of this work is on surface potential yet the first part presents a brief discussion of the independence of charge at the top of the barrier in the channel of MOS Transistor on Drain voltage. The quantum capacitance is discussed at length. The superposition theorem is used, thereafter, to obtain an expression for self consistent potential in the channel. Finally the I-V characteristics of the device are explored using Landauer formalism. The simulated results for a device are observed to represent the realistic behaviour of the device.

  3. Ideal Channel Field Effect Transistors

    Science.gov (United States)

    2010-03-01

    transistors and composite channel InAlAs/InGaAs/lnP/InAlAs high electron mobility transistors ( HEMTs ), which have taken the full advantage of the matched...lattice constant (or pseudomorphic growth). However, for the most popular wide bandgap semiconductor GaN and SiC, the lattice mismatch between GaN ...critical thickness of InN on GaN is about one monolayer. To marry the advantages offered by both narrow bandgap and wide bandgap semiconductors, we

  4. Tunneling field effect transistor technology

    CERN Document Server

    Chan, Mansun

    2016-01-01

    This book provides a single-source reference to the state-of-the art in tunneling field effect transistors (TFETs). Readers will learn the TFETs physics from advanced atomistic simulations, the TFETs fabrication process and the important roles that TFETs will play in enabling integrated circuit designs for power efficiency. · Provides comprehensive reference to tunneling field effect transistors (TFETs); · Covers all aspects of TFETs, from device process to modeling and applications; · Enables design of power-efficient integrated circuits, with low power consumption TFETs.

  5. Electronic components, tubes and transistors

    CERN Document Server

    Dummer, G W A

    1965-01-01

    Electronic Components, Tubes and Transistors aims to bridge the gap between the basic measurement theory of resistance, capacitance, and inductance and the practical application of electronic components in equipments. The more practical or usage aspect of electron tubes and semiconductors is given emphasis over theory. The essential characteristics of each main type of component, tube, and transistor are summarized. This book is comprised of six chapters and begins with a discussion on the essential characteristics in terms of the parameters usually required in choosing a resistor, including s

  6. The four-gate transistor

    Science.gov (United States)

    Mojarradi, M. M.; Cristoveanu, S.; Allibert, F.; France, G.; Blalock, B.; Durfrene, B.

    2002-01-01

    The four-gate transistor or G4-FET combines MOSFET and JFET principles in a single SOI device. Experimental results reveal that each gate can modulate the drain current. Numerical simulations are presented to clarify the mechanisms of operation. The new device shows enhanced functionality, due to the combinatorial action of the four gates, and opens rather revolutionary applications.

  7. Electron tunneling transport across heterojunctions between europium sulfide and indium arsenide

    Science.gov (United States)

    Kallaher, Raymond L.

    This dissertation presents research done on utilizing the ferromagnetic semiconductor europium sulfide (EuS) to inject spin polarized electrons into the non-magnetic semiconductor indium arsenide (InAs). There is great interest in expanding the functionality of modern day electronic circuits by creating devices that depend not only on the flow of charge in the device, but also on the transport of spin through the device. Within this mindset, there is a concerted effort to establish an efficient means of injecting and detecting spin polarized electrons in a two dimensional electron system (2DES) as the first step in developing a spin based field effect transistor. Thus, the research presented in this thesis has focused on the feasibility of using EuS, in direct electrical contact with InAs, as a spin injecting electrode into an InAs 2DES. Doped EuS is a concentrated ferromagnetic semiconductor, whose conduction band undergoes a giant Zeeman splitting when the material becomes ferromagnetic. The concomitant difference in energy between the spin-up and spin-down energy bands makes the itinerant electrons in EuS highly spin polarized. Thus, in principle, EuS is a good candidate to be used as an injector of spin polarized electrons into non-magnetic materials. In addition, the ability to adjust the conductivity of EuS by varying the doping level in the material makes EuS particularly suited for injecting spins into non-magnetic semiconductors and 2DES. For this research, thin films of EuS have been grown via e-beam evaporation of EuS powder. This growth technique produces EuS films that are sulfur deficient; these sulfur vacancies act as intrinsic electron donors and the resulting EuS films behave like heavily doped ferromagnetic semiconductors. The growth parameters and deposition procedures were varied and optimized in order to fabricate films that have minimal crystalline defects. Various properties and characteristics of these EuS films were measured and compared to

  8. A High-Voltage Level Tolerant Transistor Circuit

    NARCIS (Netherlands)

    Annema, Anne Johan; Geelen, Godefridus Johannes Gertrudis Maria

    2001-01-01

    A high-voltage level tolerant transistor circuit, comprising a plurality of cascoded transistors, including a first transistor (T1) operatively connected to a high-voltage level node (3) and a second transistor (T2) operatively connected to a low-voltage level node (2). The first transistor (T1) con

  9. Electronic properties and chemical bonding in quaternary arsenide oxides LaZnAsO and YZnAsO

    Energy Technology Data Exchange (ETDEWEB)

    Bannikov, V.V.; Shein, I.R. [Institute of Solid State Chemistry, Ural Branch of the Russian Academy of Sciences, Pervomaiskaya, 91, 620041, Ekaterinburg (Russian Federation); Ivanovskii, A.L., E-mail: ivanovskii@ihim.uran.ru [Institute of Solid State Chemistry, Ural Branch of the Russian Academy of Sciences, Pervomaiskaya, 91, 620041, Ekaterinburg (Russian Federation)

    2009-07-15

    First principles FLAPW-GGA band structure calculations are employed to obtain the structural, electronic properties and chemical bonding picture for two related phases, namely, quaternary arsenide oxides LaZnAsO and YZnAsO. These compounds are found to be direct-transition type semiconductors with the GGA gaps of about 0.65-1.30 eV. The peculiarities of chemical bonding in these phases are investigated and discussed in comparison with quaternary arsenide oxide LaFeAsO-a basic phase for the newly discovered 26-55 K superconductors.

  10. High Pressure X-ray Diffraction Study on Icosahedral Boron Arsenide (B12As2)

    Energy Technology Data Exchange (ETDEWEB)

    J Wu; H Zhu; D Hou; C Ji; C Whiteley; J Edgar; Y Ma

    2011-12-31

    The high pressure properties of icosahedral boron arsenide (B12As2) were studied by in situ X-ray diffraction measurements at pressures up to 25.5 GPa at room temperature. B12As2 retains its rhombohedral structure; no phase transition was observed in the pressure range. The bulk modulus was determined to be 216 GPa with the pressure derivative 2.2. Anisotropy was observed in the compressibility of B12As2-c-axis was 16.2% more compressible than a-axis. The boron icosahedron plays a dominant role in the compressibility of boron-rich compounds.

  11. Development of gallium arsenide high-speed, low-power serial parallel interface modules: Executive summary

    Science.gov (United States)

    1988-01-01

    Final report to NASA LeRC on the development of gallium arsenide (GaAS) high-speed, low power serial/parallel interface modules. The report discusses the development and test of a family of 16, 32 and 64 bit parallel to serial and serial to parallel integrated circuits using a self aligned gate MESFET technology developed at the Honeywell Sensors and Signal Processing Laboratory. Lab testing demonstrated 1.3 GHz clock rates at a power of 300 mW. This work was accomplished under contract number NAS3-24676.

  12. Growth of Gold-assisted Gallium Arsenide Nanowires on Silicon Substrates via Molecular Beam Epitaxy

    Directory of Open Access Journals (Sweden)

    Ramon M. delos Santos

    2008-06-01

    Full Text Available Gallium arsenide nanowires were grown on silicon (100 substrates by what is called the vapor-liquid-solid (VLS growth mechanism using a molecular beam epitaxy (MBE system. Good quality nanowires with surface density of approximately 108 nanowires per square centimeter were produced by utilizing gold nanoparticles, with density of 1011 nanoparticles per square centimeter, as catalysts for nanowire growth. X-ray diffraction measurements, scanning electron microscopy, transmission electron microscopy and Raman spectroscopy revealed that the nanowires are epitaxially grown on the silicon substrates, are oriented along the [111] direction and have cubic zincblende structure.

  13. Functional renormalization group study of an 8-band model for the iron arsenides

    Science.gov (United States)

    Honerkamp, Carsten; Lichtenstein, Julian; Maier, Stefan A.; Platt, Christian; Thomale, Ronny; Andersen, Ole Krogh; Boeri, Lilia

    2014-03-01

    We investigate the superconducting pairing instabilities of eight-band models for 1111 iron arsenides. Using a functional renormalization group treatment, we determine how the critical energy scale for superconductivity depends on the electronic band structure. Most importantly, if we vary the parameters from values corresponding to LaFeAsO to SmFeAsO, the pairing scale is strongly enhanced, in accordance with the experimental observation. We analyze the reasons for this trend and compare the results of the eight-band approach to those found using five-band models.

  14. Functional renormalization group study of an eight-band model for the iron arsenides

    Science.gov (United States)

    Lichtenstein, J.; Maier, S. A.; Honerkamp, C.; Platt, C.; Thomale, R.; Andersen, O. K.; Boeri, L.

    2014-06-01

    We investigate the superconducting pairing instabilities of eight-band models for the iron arsenides. Using a functional renormalization group treatment, we determine how the critical energy scale for superconductivity depends on the electronic band structure. Most importantly, if we vary the parameters from values corresponding to LaFeAsO to SmFeAsO, the pairing scale is strongly enhanced, in accordance with the experimental observation. We analyze the reasons for this trend and compare the results of the eight-band approach to those found using five-band models.

  15. Analytical and experimental procedures for determining propagation characteristics of millimeter-wave gallium arsenide microstrip lines

    Science.gov (United States)

    Romanofsky, Robert R.

    1989-01-01

    In this report, a thorough analytical procedure is developed for evaluating the frequency-dependent loss characteristics and effective permittivity of microstrip lines. The technique is based on the measured reflection coefficient of microstrip resonator pairs. Experimental data, including quality factor Q, effective relative permittivity, and fringing for 50-omega lines on gallium arsenide (GaAs) from 26.5 to 40.0 GHz are presented. The effects of an imperfect open circuit, coupling losses, and loading of the resonant frequency are considered. A cosine-tapered ridge-guide text fixture is described. It was found to be well suited to the device characterization.

  16. Low Power Band to Band Tunnel Transistors

    Science.gov (United States)

    2010-12-15

    the E-field and tunneling at the source- pocket junction you form a parasitic NPN + transistor and the injection mechanism of carriers into the...hypothesis that the 1000 ° C, 5s anneal split lead to a very wide pocket and the accidental formation of a NPN + transistor , while the 1000 ° C, 1s anneal...Low Power Band to Band Tunnel Transistors Anupama Bowonder Electrical Engineering and Computer Sciences University of California at Berkeley

  17. Single-transistor-clocked flip-flop

    Science.gov (United States)

    Zhao, Peiyi; Darwish, Tarek; Bayoumi, Magdy

    2005-08-30

    The invention provides a low power, high performance flip-flop. The flip-flop uses only one clocked transistor. The single clocked transistor is shared by the first and second branches of the device. A pulse generator produces a clock pulse to trigger the flip-flop. In one preferred embodiment the device can be made as a static explicit pulsed flip-flop which employs only two clocked transistors.

  18. Superconducting Josephson vortex flow transistors

    CERN Document Server

    Tavares, P A C

    2002-01-01

    The work reported in this thesis focuses on the development of high-temperature superconducting Josephson vortex-flow transistors (JVFTs). The JVFT is a particular type of superconducting transistor, i.e. an electromagnetic device capable of delivering gain while keeping the control and output circuits electrically isolated. Devices were fabricated from (100) YBa sub 2 Cu sub 3 O sub 7 sub - subdelta thin films grown by Pulsed Laser Deposition on 24 deg magnesium oxide and strontium titanate bicrystals. The design of the JVFTs was guided by numerical simulations and the devices were optimised for current gain. Improvements were made to the fabrication process in order to accurately pattern the small structures required. The devices exhibited current gains higher than 60 in liquid nitrogen. Gains measured at lower temperatures were significantly higher. As part of the work a data acquisition suite was developed for the characterisation of three-terminal devices and, in particular, of JVFTs.

  19. THE QUANTUM-WELL STRUCTURES OF SELF ELECTROOPTIC-EFFECT DEVICES AND GALLIUM-ARSENIDE

    Directory of Open Access Journals (Sweden)

    Mustafa TEMİZ

    1996-02-01

    Full Text Available Multiple quantum-well (MQW electroabsorptive self electro optic-effect devices (SEEDs are being extensively studied for use in optical switching and computing. The self electro-optic-effect devices which has quantum-well structures is a new optoelectronic technology with capability to obtain both optical inputs and outputs for Gallium-Arsenide/Aluminum Gallium-Arsenide (GaAs/AlGaAs electronic circuits. The optical inputs and outputs are based on quantum-well absorptive properties. These quantum-well structures consist of many thin layers of semiconductors materials of GaAs/AlGaAs which have emerged some important directions recently. The most important advance in the physics of these materials since the early days has been invention of the heterojunction structures which is based at present on GaAs technology. GaAs/AlGaAs structures present some important advantages to relevant band gap and index of refraction which allow to form the quantum-well structures and also to make semiconductor lasers, dedectors and waveguide optical switches.

  20. Structural and electrooptical characteristics of quantum dots emitting at 1.3 μm on gallium arsenide

    DEFF Research Database (Denmark)

    Fiore, A.; Oesterle, U.; Stanley, R.P.;

    2001-01-01

    We present a comprehensive study of the structural and emission properties of self-assembled InAs quantum dots emitting at 1.3 mum. The dots are grown by molecular beam epitaxy on gallium arsenide substrates. Room-temperature emission at 1.3 mum is obtained by embedding the dots in an InGaAs layer...

  1. Ultrasmall transistor-based light sources

    DEFF Research Database (Denmark)

    With Jensen, Per Baunegaard; Tavares, Luciana; Kjelstrup-Hansen, Jakob;

    Dette projekt fokuserer på at udvikle transistor baserede nanofiber lyskilder med det overordnede mål at udvikle effektive og nano skalerede flerfarvede lyskilder integreret on-chip.......Dette projekt fokuserer på at udvikle transistor baserede nanofiber lyskilder med det overordnede mål at udvikle effektive og nano skalerede flerfarvede lyskilder integreret on-chip....

  2. Operation and modeling of the MOS transistor

    CERN Document Server

    Tsividis, Yannis

    2011-01-01

    Operation and Modeling of the MOS Transistor has become a standard in academia and industry. Extensively revised and updated, the third edition of this highly acclaimed text provides a thorough treatment of the MOS transistor - the key element of modern microelectronic chips.

  3. Charge transport in polymeric transistors

    Directory of Open Access Journals (Sweden)

    Alberto Salleo

    2007-03-01

    Full Text Available Polymeric semiconductors have attracted much attention because of their possible use as active materials in printed electronics. Thin-film transistors (TFTs are a convenient tool for studying charge-transport physics in conjugated polymers. Two families of materials are reviewed here: fluorene copolymers and polythiophenes. Because charge transport is highly anisotropic in molecular conductors, the electrical properties of conjugated polymers are strongly dependent on microstructure. Molecular weight, polydispersity, and regioregularity all affect morphology and charge-transport in these materials. Charge transport models based on microstructure are instrumental in identifying the electrical bottlenecks in these materials.

  4. Transistor switching and sequential circuits

    CERN Document Server

    Sparkes, John J

    1969-01-01

    Transistor Switching and Sequential Circuits presents the basic ideas involved in the construction of computers, instrumentation, pulse communication systems, and automation. This book discusses the design procedure for sequential circuits. Organized into two parts encompassing eight chapters, this book begins with an overview of the ways on how to generate the types of waveforms needed in digital circuits, principally ramps, square waves, and delays. This text then considers the behavior of some simple circuits, including the inverter, the emitter follower, and the long-tailed pair. Other cha

  5. Straw man trade between multi-junction, gallium arsenide, and silicon solar cells

    Science.gov (United States)

    Gaddy, Edward M.

    1995-01-01

    Multi-junction (MJ), gallium arsenide (GaAs), and silicon (Si) solar cells have respective test efficiencies of approximately 24%, 18.5% and 14.8%. Multi-junction and gallium arsenide solar cells weigh more than silicon solar cells and cost approximately five times as much per unit power at the cell level. A straw man trade is performed for the TRMM spacecraft to determine which of these cell types would have offered an overall performance and price advantage to the spacecraft. A straw man trade is also performed for the multi-junction cells under the assumption that they will cost over ten times that of silicon cells at the cell level. The trade shows that the TRMM project, less the cost of the instrument, ground systems and mission operations, would spend approximately $552 thousand dollars per kilogram to launch and service science in the case of the spacecraft equipped with silicon solar cells. If these cells are changed out for gallium arsenide solar cells, an additional 31 kilograms of science can be launched and serviced at a price of approximately $90 thousand per kilogram. The weight reduction is shown to derive from the smaller area of the array and hence reductions in the weight of the array substrate and supporting structure. If the silicon solar cells are changed out for multi-junction solar cells, an additional 45 kilograms of science above the silicon base line can be launched and serviced at a price of approximately $58 thousand per kilogram. The trade shows that even if the multi-junction arrays are priced over ten times that of silicon cells, a price that is much higher than projected, that the additional 45 kilograms of science are launched and serviced at $182 thousand per kilogram. This is still much less than original $552 thousand per kilogram to launch and service the science. Data and qualitative factors are presented to show that these figures are subject to a great deal of uncertainty. Nonetheless, the benefit of the higher efficiency

  6. Photovoltage field-effect transistors

    Science.gov (United States)

    Adinolfi, Valerio; Sargent, Edward H.

    2017-02-01

    The detection of infrared radiation enables night vision, health monitoring, optical communications and three-dimensional object recognition. Silicon is widely used in modern electronics, but its electronic bandgap prevents the detection of light at wavelengths longer than about 1,100 nanometres. It is therefore of interest to extend the performance of silicon photodetectors into the infrared spectrum, beyond the bandgap of silicon. Here we demonstrate a photovoltage field-effect transistor that uses silicon for charge transport, but is also sensitive to infrared light owing to the use of a quantum dot light absorber. The photovoltage generated at the interface between the silicon and the quantum dot, combined with the high transconductance provided by the silicon device, leads to high gain (more than 104 electrons per photon at 1,500 nanometres), fast time response (less than 10 microseconds) and a widely tunable spectral response. Our photovoltage field-effect transistor has a responsivity that is five orders of magnitude higher at a wavelength of 1,500 nanometres than that of previous infrared-sensitized silicon detectors. The sensitization is achieved using a room-temperature solution process and does not rely on traditional high-temperature epitaxial growth of semiconductors (such as is used for germanium and III–V semiconductors). Our results show that colloidal quantum dots can be used as an efficient platform for silicon-based infrared detection, competitive with state-of-the-art epitaxial semiconductors.

  7. Graphene field-effect transistors

    Energy Technology Data Exchange (ETDEWEB)

    Reddy, Dharmendar; Register, Leonard F; Banerjee, Sanjay K [Microelectronics Research Center, University of Texas at Austin, Austin, Texas 78758 (United States); Carpenter, Gary D [IBM Austin Research Labs, Austin, Texas 78728 (United States)

    2011-08-10

    Owing in part to scaling challenges for metal oxide semiconductor field-effect transistors (MOSFETs) and complementary metal oxide semiconductor (CMOS) logic, the semiconductor industry is placing an increased emphasis on emerging materials and devices that may provide improved MOSFET performance beyond the 22 nm node, or provide novel functionality for, e.g. 'beyond CMOS' devices. Graphene, with its novel and electron-hole symmetric band structure and its high carrier mobilities and thermal velocities, is one such material that has garnered a great deal of interest for both purposes. Single and few layer carbon sheets have been fabricated by a variety of techniques including mechanical exfoliation and chemical vapour deposition, and field-effect transistors have been demonstrated with room-temperature mobilities as high as 10 000 cm{sup 2} V{sup -1} s{sup -1}. But graphene is a gapless semiconductor and gate control of current is challenging, off-state leakage currents are high, and current does not readily saturate with drain voltage. However, various ways to overcome, adapt to, or even embrace this property are now being considered for device applications. In this work we explore through illustrative examples the potential of and challenges to graphene use for conventional and novel device applications. (topical review)

  8. Graphene field-effect transistors

    Science.gov (United States)

    Reddy, Dharmendar; Register, Leonard F.; Carpenter, Gary D.; Banerjee, Sanjay K.

    2011-08-01

    Owing in part to scaling challenges for metal oxide semiconductor field-effect transistors (MOSFETs) and complementary metal oxide semiconductor (CMOS) logic, the semiconductor industry is placing an increased emphasis on emerging materials and devices that may provide improved MOSFET performance beyond the 22 nm node, or provide novel functionality for, e.g. 'beyond CMOS' devices. Graphene, with its novel and electron-hole symmetric band structure and its high carrier mobilities and thermal velocities, is one such material that has garnered a great deal of interest for both purposes. Single and few layer carbon sheets have been fabricated by a variety of techniques including mechanical exfoliation and chemical vapour deposition, and field-effect transistors have been demonstrated with room-temperature mobilities as high as 10 000 cm2 V-1 s-1. But graphene is a gapless semiconductor and gate control of current is challenging, off-state leakage currents are high, and current does not readily saturate with drain voltage. However, various ways to overcome, adapt to, or even embrace this property are now being considered for device applications. In this work we explore through illustrative examples the potential of and challenges to graphene use for conventional and novel device applications.

  9. Voltage regulator for battery power source. [using a bipolar transistor

    Science.gov (United States)

    Black, J. M. (Inventor)

    1979-01-01

    A bipolar transistor in series with the battery as the control element also in series with a zener diode and a resistor is used to maintain a predetermined voltage until the battery voltage decays to very nearly the predetermined voltage. A field effect transistor between the base of the bipolar transistor and a junction between the zener diode and resistor regulates base current of the bipolar transistor, thereby regulating the conductivity of the bipolar transistor for control of the output voltage.

  10. Electronic structure, magnetic and superconducting properties of co-doped iron-arsenide superconductors

    Energy Technology Data Exchange (ETDEWEB)

    Rosner, Helge; Schnelle, Walter; Nicklas, Michael; Leithe-Jasper, Andreas [MPI CPfS Dresden (Germany); Weikert, Franziska [Los Alamos National Laboratory, New Mexico (United States); HLD Dresden Rossendorf (Germany); Wosnitza, Joachim [HLD Dresden Rossendorf (Germany)

    2013-07-01

    We present a joint experimental and theoretical study of co-doped iron-arsenide superconductors of the 122 family A{sub 1-x}K{sub x}Fe{sub 2-y}T{sub y}As{sub 2} (A = Ba,Sr,Eu; T = Co,Ru,Rh). In these systems, the co-doping enables the separation of different parameters - like electron count, disorder or the specific geometry of the FeAs layer - with respect to the position of the respective compounds in the general 122 phase diagram. For a series of compounds, we investigate the relevance of the different parameters for the magnetic, thermodynamic and superconducting properties. Our experimental investigations are supported by density functional electronic structure calculations applying different approximations for doping and disorder.

  11. An effective electron mass in heavily doped gallium arsenide under ordering impurity complexes

    CERN Document Server

    Bogdanova, V A; Semikolenova, N A; Sidorov, E N

    2002-01-01

    The results of an investigation of edge photoluminescence spectra at 300 K for series of Czochralski grown tellurium doped gallium arsenide monocrystals with free carriers concentration n sub 0 = 10 sup 1 sup 7 -10 sup 1 sup 9 cm sup - sup 3 are presented. On the basis of photoluminescence spectra contour analysis the concentration dependences of chemical potential and value of band gap narrowing are obtained. The concentration dependence of electron effective mass m* sub 0 (n sub 0) at the bottom of the conduction band is calculated. It is shown, that the nonmonotonous dependence m* sub 0 (n sub 0) is an accordance with electron scattering data in the material under study and is conditioned by ordering of impurity complexes

  12. NMR studies on the new iron arsenide superconductors including the superconducting state

    Energy Technology Data Exchange (ETDEWEB)

    Grafe, Hans-Joachim; Lang, Guillaume; Hammerath, Franziska; Manthey, Katarina; Behr, Guenther; Werner, Jochen; Buechner, Bernd [IFW Dresden, Helmholtzstr. 20, D-01069 Dresden (Germany); Paar, Dalibor [IFW Dresden, Helmholtzstr. 20, D-01069 Dresden (Germany); Dept. of Physics, Faculty of Science, Univ. of Zagreb (Croatia); Curro, Nicholas [Dept. of Physics, Univ. of California, Davis, CA 95616 (United States)

    2009-07-01

    We summarize our Nuclear Magnetic Resonance (NMR) and Nuclear Quadrupole Resonance (NQR) results on the new iron arsenide superconductor LaO{sub 1-x}F{sub x}FeAs in the normal state, and show new NMR data in the superconducting state. Beyond early evidence of nodes and spin-singlet pairing[2], we find evidence of a deviation of the T{sup 3} behaviour of the spin lattice relaxation rate, 1/T{sub 1}, at temperatures significantly below T{sub c}, which would agree with the suggested extended s-wave symmetry. The deviation of the T{sup 3} behaviour is induced by the pair breaking effect of impurities. Different amounts of impurities would lead to different temperature dependences of 1/T{sub 1}, which would allow to differentiate between d-wave and extended s-wave symmetries.

  13. Ultrafast photocurrents and terahertz radiation in gallium arsenide and carbon based nanostructures

    Energy Technology Data Exchange (ETDEWEB)

    Prechtel, Hans Leonhard

    2011-08-15

    In this thesis we developed a measurement technique based on a common pump-probe scheme and coplanar stripline circuits that enables time-resolved photocurrent measurements of contacted nanosystems with a micrometer spatial and a picosecond time resolution. The measurement technique was applied to lowtemperature grown gallium arsenide (LT-GaAs), carbon nanotubes (CNTs), graphene, and p-doped gallium arsenide (GaAs) nanowires. The various mechanisms responsible for the generation of current pulses by pulsed laser excitation were reviewed. Furthermore the propagation of the resulting electromagnetic radiation along a coplanar stripline circuit was theoretically and numerically treated. The ultrafast photocurrent response of low-temperature grown GaAs was investigated. We found two photocurrent pulses in the time-resolved response. We showed that the first pulse is consistent with a displacement current pulse. We interpreted the second pulse to result from a transport current process. We further determined the velocity of the photo-generated charge carriers to exceed the drift, thermal and quantum velocities of single charge carriers. Hereby, we interpreted the transport current pulse to stem from an electron-hole plasma excitation. We demonstrated that the photocurrent response of CNTs comprises an ultrafast displacement current and a transport current. The data suggested that the photocurrent is finally terminated by the recombination lifetime of the charge carriers. To the best of our knowledge, we presented in this thesis the first recombination lifetime measurements of contacted, suspended, CVD grown CNT networks. In addition, we studied the ultrafast photocurrent dynamics of freely suspended graphene contacted by metal electrodes. At the graphene-metal interface, we demonstrated that built-in electric fields give rise to a photocurrent with a full-width-half-maximum of a few picoseconds and that a photo-thermoelectric effect generates a current with a decay time

  14. Outdoor Performance of a Thin-Film Gallium-Arsenide Photovoltaic Module

    Energy Technology Data Exchange (ETDEWEB)

    Silverman, T. J.; Deceglie, M. G.; Marion, B.; Cowley, S.; Kayes, B.; Kurtz, S.

    2013-06-01

    We deployed a 855 cm2 thin-film, single-junction gallium arsenide (GaAs) photovoltaic (PV) module outdoors. Due to its fundamentally different cell technology compared to silicon (Si), the module responds differently to outdoor conditions. On average during the test, the GaAs module produced more power when its temperature was higher. We show that its maximum-power temperature coefficient, while actually negative, is several times smaller in magnitude than that of a Si module used for comparison. The positive correlation of power with temperature in GaAs is due to temperature-correlated changes in the incident spectrum. We show that a simple correction based on precipitable water vapor (PWV) brings the photocurrent temperature coefficient into agreement with that measured by other methods and predicted by theory. The low operating temperature and small temperature coefficient of GaAs give it an energy production advantage in warm weather.

  15. Advances in gallium arsenide monolithic microwave integrated-circuit technology for space communications systems

    Science.gov (United States)

    Bhasin, K. B.; Connolly, D. J.

    1986-01-01

    Future communications satellites are likely to use gallium arsenide (GaAs) monolithic microwave integrated-circuit (MMIC) technology in most, if not all, communications payload subsystems. Multiple-scanning-beam antenna systems are expected to use GaAs MMIC's to increase functional capability, to reduce volume, weight, and cost, and to greatly improve system reliability. RF and IF matrix switch technology based on GaAs MMIC's is also being developed for these reasons. MMIC technology, including gigabit-rate GaAs digital integrated circuits, offers substantial advantages in power consumption and weight over silicon technologies for high-throughput, on-board baseband processor systems. In this paper, current developments in GaAs MMIC technology are described, and the status and prospects of the technology are assessed.

  16. Ultrafast Relaxation Dynamics of Photo-excited Dirac Fermion in Three Dimensional Dirac Semimetal Cadmium Arsenide

    CERN Document Server

    Lu, Wei; Liu, Xuefeng; Lu, Hong; Li, Caizhen; Lai, Jiawei; Zhao, Chuan; Tian, Ye; Liao, Zhimin; Jia, Shuang; Sun, Dong

    2016-01-01

    Three dimensional (3D) Dirac semimetal exhibiting ultrahigh mobility has recently attracted enormous research interests as 3D analogues of graphene. From the prospects of future application toward electronic/optoelectronic devices with extreme performance, it is crucial to understand the relaxation dynamics of photo-excited carriers and their coupling with lattice. In this work, we report ultrafast transient reflection measurements of photo-excited carrier dynamics in cadmium arsenide (Cd3As2), which is among the most stable Dirac semimetals that have been confirmed experimentally. With low energy probe photon of 0.3 eV, photo-excited Dirac Fermions dynamics closing to Dirac point are probed. Through transient reflection measurements on bulk and nanoplate samples that have different doping intensities, and systematic probe wavelength, pump power and lattice temperature dependent measurements, the dynamical evolution of carrier distributions can be retrieved qualitatively using a two-temperature model. The pho...

  17. Methods for forming group III-V arsenide-nitride semiconductor materials

    Science.gov (United States)

    Major, Jo S. (Inventor); Welch, David F. (Inventor); Scifres, Donald R. (Inventor)

    2000-01-01

    Methods are disclosed for forming Group III--arsenide-nitride semiconductor materials. Group III elements are combined with group V elements, including at least nitrogen and arsenic, in concentrations chosen to lattice match commercially available crystalline substrates. Epitaxial growth of these III-V crystals results in direct bandgap materials, which can be used in applications such as light emitting diodes and lasers. Varying the concentrations of the elements in the III-V crystals varies the bandgaps, such that materials emitting light spanning the visible spectra, as well as mid-IR and near-UV emitters, can be created. Conversely, such material can be used to create devices that acquire light and convert the light to electricity, for applications such as full color photodetectors and solar energy collectors. The growth of the III-V crystals can be accomplished by growing thin layers of elements or compounds in sequences that result in the overall lattice match and bandgap desired.

  18. Non-Planar Nanotube and Wavy Architecture Based Ultra-High Performance Field Effect Transistors

    KAUST Repository

    Hanna, Amir

    2016-11-01

    This dissertation presents a unique concept for a device architecture named the nanotube (NT) architecture, which is capable of higher drive current compared to the Gate-All-Around Nanowire architecture when applied to heterostructure Tunnel Field Effect Transistors. Through the use of inner/outer core-shell gates, heterostructure NT TFET leverages physically larger tunneling area thus achieving higher driver current (ION) and saving real estates by eliminating arraying requirement. We discuss the physics of p-type (Silicon/Indium Arsenide) and n-type (Silicon/Germanium hetero-structure) based TFETs. Numerical TCAD simulations have shown that NT TFETs have 5x and 1.6 x higher normalized ION when compared to GAA NW TFET for p and n-type TFETs, respectively. This is due to the availability of larger tunneling junction cross sectional area, and lower Shockley-Reed-Hall recombination, while achieving sub 60 mV/dec performance for more than 5 orders of magnitude of drain current, thus enabling scaling down of Vdd to 0.5 V. This dissertation also introduces a novel thin-film-transistors architecture that is named the Wavy Channel (WC) architecture, which allows for extending device width by integrating vertical fin-like substrate corrugations giving rise to up to 50% larger device width, without occupying extra chip area. The novel architecture shows 2x higher output drive current per unit chip area when compared to conventional planar architecture. The current increase is attributed to both the extra device width and 50% enhancement in field effect mobility due to electrostatic gating effects. Digital circuits are fabricated to demonstrate the potential of integrating WC TFT based circuits. WC inverters have shown 2× the peak-to-peak output voltage for the same input, and ~2× the operation frequency of the planar inverters for the same peak-to-peak output voltage. WC NAND circuits have shown 2× higher peak-to-peak output voltage, and 3× lower high-to-low propagation

  19. Basic matrix algebra and transistor circuits

    CERN Document Server

    Zelinger, G

    1963-01-01

    Basic Matrix Algebra and Transistor Circuits deals with mastering the techniques of matrix algebra for application in transistors. This book attempts to unify fundamental subjects, such as matrix algebra, four-terminal network theory, transistor equivalent circuits, and pertinent design matters. Part I of this book focuses on basic matrix algebra of four-terminal networks, with descriptions of the different systems of matrices. This part also discusses both simple and complex network configurations and their associated transmission. This discussion is followed by the alternative methods of de

  20. Atomic quantum transistor based on swapping operation

    CERN Document Server

    Moiseev, Sergey A; Moiseev, Eugene S

    2011-01-01

    We propose an atomic quantum transistor based on exchange by virtual photons between two atomic systems through the control gate-atom. The quantum transistor is realized in two QED cavities coupled in nano-optical scheme. We have found novel effect in quantum dynamics of coupled three-node atomic system which provides control-SWAP(\\theta) processes in quantum transistor operation. New possibilities of quantum entanglement in an example of bright and dark qubit states have been demonstrated for quantum transport in the atomic chain. Potentialities of the proposed nano-optical design for quantum computing and fundamental issues of multi-atomic physics are also discussed.

  1. Organic and polymer transistors for electronics

    Directory of Open Access Journals (Sweden)

    Ananth Dodabalapur

    2006-04-01

    Full Text Available Some of the major application areas for organic and polymeric transistors are reviewed. Organic complementary devices are promising on account of their lower power dissipation and ease of circuit design. The first organic large-scale integrated circuits have been implemented with this circuit approach. Organic transistor backplanes are ideally suited for electronic paper applications and other display schemes. Low-cost and other processing advantages, as well as improving performance, have led to organic-based radio frequency identification tag development. The chemical interaction between various organic and polymer semiconductors can be exploited in chemical and biological sensors based upon organic transistors.

  2. High-temperature optically activated GaAs power switching for aircraft digital electronic control

    Science.gov (United States)

    Berak, J. M.; Grantham, D. H.; Swindal, J. L.; Black, J. F.; Allen, L. B.

    1983-01-01

    Gallium arsenide high-temperature devices were fabricated and assembled into an optically activated pulse-width-modulated power control for a torque motor typical of the kinds used in jet engine actuators. A bipolar heterojunction phototransistor with gallium aluminum arsenide emitter/window, a gallium arsenide junction field-effect power transistor and a gallium arsenide transient protection diode were designed and fabricated. A high-temperature fiber optic/phototransistor coupling scheme was implemented. The devices assembled into the demonstrator were successfully tested at 250 C, proving the feasibility of actuator-located switching of control power using optical signals transmitted by fibers. Assessments of the efficiency and technical merits were made for extension of this high-temperature technology to local conversion of optical power to electrical power and its control at levels useful for driving actuators. Optical power sources included in the comparisons were an infrared light-emitting diode, an injection laser diode, tungsten-halogen lamps and arc lamps. Optical-to-electrical power conversion was limited to photovoltaics located at the actuator. Impedance matching of the photovoltaic array to the load was considered over the full temperature range, -55 C to 260 C. Loss of photovoltaic efficiency at higher temperatures was taken into account. Serious losses in efficiency are: (1) in the optical source and the cooling which they may require in the assumed 125 C ambient, (2) in the decreased conversion efficiency of the gallium arsenide photovoltaic at 260 C, and (3) in impedance matching. Practical systems require improvements in these areas.

  3. Sub-Half Micrometer Gate Lift-Off By Three Layer Resist Process Via Electron Beam Lithography For Gallium Arsenide Monolithic Microwave Integrated Circuits (MIMICs)

    Science.gov (United States)

    Nagarajan, Rao M.; Rask, Steven D.; King, Michael R.; Yard, Thomas K.

    1988-06-01

    A three layer resist process for gate lift-oft on Gallium Arsenide MIMICs by electron Dean and optical lithographies are described. The electron beam lithography process consists of Poly (Dimethyl Glutarimide) PMGI as tne planarizing layer, a Plasma Enhanced Chemical Vapour Deposition silicon nitride (SiN) as an intermediate barrier layer and Poly (Methyl methacrylate), PMMA, as the top imaging layer. The PivimA is exposed by Cambridge Electron beam system EBMF 6.4 at 20kev and developed in Methyl Ethyl Ketone/Iso Propyl Alcohol. The pattern is then transferred to the SiN layer by cF4/o2 plasma etcning. The SiN layer is then used as the mask to transfer the pattern to the PMGI layer by 02 kteactive Ion Etching until tne GaAS is exposed. The various processing parameters are optimized to obtain lip or overnang suitable for lift-off with 0.20μm gate dimension. After the GaAS has been recessed (to reduce the parasitic source resistance), a thick 9000Å Ti/Pt/Au gate metal is evaporated and the unwanted gate metal is lifted oft using PMGI stripper. To use the three layer resist process in optical litnograpny, the MG.'. planarizing layer and PECVD SiN layer is used along with optical pnotoresist AZ1450J as a top imaging layer. inc sofcbake, uV exposure dose (436 nm) and development time for AZ145UJ are optimized to obtain 0.5μm to 1.0μm gate dimensions. The etch parameters for the pattern transfer to SiN and tnen to PMGI layers are same as in tne above process. The process levels such as mesa, source/drain, contact and metal levels for GaAs mlivilt,s are defined by UV lithography (Karl Suss contact aligner) using single layer pnotoresist. A nign overlay accuracy is obtained by use of gold metal Dumps as registration marks for aligning tne electron Dean exposed gate to optically exposed source/drain channel. Thus a higher tnrougnput and better linewidtn control are obtained using electron beam/optical lithography tecnniques. This approach is currently used to

  4. Ionic thermoelectric gating organic transistors

    Science.gov (United States)

    Zhao, Dan; Fabiano, Simone; Berggren, Magnus; Crispin, Xavier

    2017-01-01

    Temperature is one of the most important environmental stimuli to record and amplify. While traditional thermoelectric materials are attractive for temperature/heat flow sensing applications, their sensitivity is limited by their low Seebeck coefficient (∼100 μV K−1). Here we take advantage of the large ionic thermoelectric Seebeck coefficient found in polymer electrolytes (∼10,000 μV K−1) to introduce the concept of ionic thermoelectric gating a low-voltage organic transistor. The temperature sensing amplification of such ionic thermoelectric-gated devices is thousands of times superior to that of a single thermoelectric leg in traditional thermopiles. This suggests that ionic thermoelectric sensors offer a way to go beyond the limitations of traditional thermopiles and pyroelectric detectors. These findings pave the way for new infrared-gated electronic circuits with potential applications in photonics, thermography and electronic-skins. PMID:28139738

  5. Ionic thermoelectric gating organic transistors

    Science.gov (United States)

    Zhao, Dan; Fabiano, Simone; Berggren, Magnus; Crispin, Xavier

    2017-01-01

    Temperature is one of the most important environmental stimuli to record and amplify. While traditional thermoelectric materials are attractive for temperature/heat flow sensing applications, their sensitivity is limited by their low Seebeck coefficient (~100 μV K-1). Here we take advantage of the large ionic thermoelectric Seebeck coefficient found in polymer electrolytes (~10,000 μV K-1) to introduce the concept of ionic thermoelectric gating a low-voltage organic transistor. The temperature sensing amplification of such ionic thermoelectric-gated devices is thousands of times superior to that of a single thermoelectric leg in traditional thermopiles. This suggests that ionic thermoelectric sensors offer a way to go beyond the limitations of traditional thermopiles and pyroelectric detectors. These findings pave the way for new infrared-gated electronic circuits with potential applications in photonics, thermography and electronic-skins.

  6. Interface engineering in organic transistors

    Directory of Open Access Journals (Sweden)

    Yeong Don Park

    2007-03-01

    Full Text Available Recent technological advances in organic field-effect transistors (OFETs have triggered intensive research into the molecular and mesoscale structures of organic semiconductor films that determine their charge-transport characteristics. Since the molecular structure and morphology of an organic semiconductor are largely determined by the properties of the interface between the organic film and the insulator, a great deal of research has focused on interface engineering. We review recent progress in interface engineering for the fabrication of high-performance OFETs and, in particular, engineering of the interfaces between semiconductors and insulators. The effects of interfacial characteristics on the molecular and mesoscale structures of π-conjugated molecules and the performance of OFET devices are discussed.

  7. Logic Gates with Ion Transistors

    CERN Document Server

    Grebel, Haim

    2016-01-01

    Electronic logic gates are the basic building blocks of every computing and micro controlling system. Logic gates are made of switches, such as diodes and transistors. Ion-selective, ionic switches may emulate electronic switches [1-8]. If we ever want to create artificial bio-chemical circuitry, then we need to move a step further towards ion-logic circuitry. Here we demonstrate ion XOR and OR gates with electrochemical cells, and specifically, with two wet-cell batteries. In parallel to vacuum tubes, the batteries were modified to include a third, permeable and conductive mid electrode (the gate), which was placed between the anode and cathode in order to affect the ion flow through it. The key is to control the cell output with a much smaller biasing power, as demonstrated here. A successful demonstration points to self-powered ion logic gates.

  8. Highly ordered horizontal indium gallium arsenide/indium phosphide multi-quantum-well in wire structure on (001) silicon substrates

    Science.gov (United States)

    Han, Yu; Li, Qiang; Lau, Kei May

    2016-12-01

    We report the characteristics of indium gallium arsenide stacked quantum structures inside planar indium phosphide nanowires grown on exact (001) silicon substrates. The morphological evolution of the indium phosphide ridge buffers inside sub-micron trenches has been studied, and the role of inter-facet diffusion in this process is discussed. Inside a single indium phosphide nanowire, we are able to stack quantum structures including indium gallium arsenide flat quantum wells, quasi-quantum wires, quantum wires, and ridge quantum wells. Room temperature photoluminescence measurements reveal a broadband emission spectrum centered at 1550 nm. Power dependent photoluminescence analysis indicates the presence of quasi-continuum states. This work thus provides insights into the design and growth process control of multiple quantum wells in wire structures for high performance nanowire lasers on a silicon substrate with 1550 nm band emission.

  9. In-Plane Electronic Anisotropy of Underdoped ___122___ Fe-Arsenide Superconductors Revealed by Measurements of Detwinned Single Crystals

    Energy Technology Data Exchange (ETDEWEB)

    Fisher, Ian Randal

    2012-05-08

    The parent phases of the Fe-arsenide superconductors harbor an antiferromagnetic ground state. Significantly, the Neel transition is either preceded or accompanied by a structural transition that breaks the four fold symmetry of the high-temperature lattice. Borrowing language from the field of soft condensed matter physics, this broken discrete rotational symmetry is widely referred to as an Ising nematic phase transition. Understanding the origin of this effect is a key component of a complete theoretical description of the occurrence of superconductivity in this family of compounds, motivating both theoretical and experimental investigation of the nematic transition and the associated in-plane anisotropy. Here we review recent experimental progress in determining the intrinsic in-plane electronic anisotropy as revealed by resistivity, reflectivity and ARPES measurements of detwinned single crystals of underdoped Fe arsenide superconductors in the '122' family of compounds.

  10. The Coefficients of Thermal Expansion of Boron Arsenide (B12As2) Between 25 C and 850 C

    Energy Technology Data Exchange (ETDEWEB)

    Whiteley, Clinton E. [Kansas State University; Kirkham, Melanie J [ORNL; Edgar, J H [Kansas State University

    2013-01-01

    The semiconductor boron arsenide has a high 10B density, a wide bandgap, and a high melting temperature, all of which make it an interesting candidate for high-temperature electronic devices and radiation detectors. The present investigation was undertaken to determine the coefficients of thermal expansion for boron arsenide. B12As2 powder was synthesized from boron and arsenic heated in a sealed quartz ampoule at 1100 C for 72 hrs with excess boron. Using high temperature X-ray diffraction (HTXRD) between 25 C and 850 C, the average lattice coefficients of thermal expansion were measured perpendicular and parallel to the <111> axis in the rhombohedral setting (equivalent to the a and c axes in the hexagonal setting): 4.9x10-6 K-1 and 5.3x10-6 K-1, respectively. The average unit cell volumetric coefficient of thermal expansion was determined to be 1.5x10-5 K-1.

  11. Scattering theory of the Johnson spin transistor

    OpenAIRE

    Geux, Linda S.; Brataas, Arne; Bauer, Gerrit E. W.

    1999-01-01

    We discuss a simple, semiclassical scattering theory for spin-dependent transport in a many-terminal formulation, with special attention to the four terminal device of Johnson referred to as spin transistor

  12. Logic gates based on ion transistors.

    Science.gov (United States)

    Tybrandt, Klas; Forchheimer, Robert; Berggren, Magnus

    2012-05-29

    Precise control over processing, transport and delivery of ionic and molecular signals is of great importance in numerous fields of life sciences. Integrated circuits based on ion transistors would be one approach to route and dispense complex chemical signal patterns to achieve such control. To date several types of ion transistors have been reported; however, only individual devices have so far been presented and most of them are not functional at physiological salt concentrations. Here we report integrated chemical logic gates based on ion bipolar junction transistors. Inverters and NAND gates of both npn type and complementary type are demonstrated. We find that complementary ion gates have higher gain and lower power consumption, as compared with the single transistor-type gates, which imitates the advantages of complementary logics found in conventional electronics. Ion inverters and NAND gates lay the groundwork for further development of solid-state chemical delivery circuits.

  13. Water-gel for gating graphene transistors.

    Science.gov (United States)

    Kim, Beom Joon; Um, Soong Ho; Song, Woo Chul; Kim, Yong Ho; Kang, Moon Sung; Cho, Jeong Ho

    2014-05-14

    Water, the primary electrolyte in biology, attracts significant interest as an electrolyte-type dielectric material for transistors compatible with biological systems. Unfortunately, the fluidic nature and low ionic conductivity of water prevents its practical usage in such applications. Here, we describe the development of a solid state, megahertz-operating, water-based gate dielectric system for operating graphene transistors. The new electrolyte systems were prepared by dissolving metal-substituted DNA polyelectrolytes into water. The addition of these biocompatible polyelectrolytes induced hydrogelation to provide solid-state integrity to the system. They also enhanced the ionic conductivities of the electrolytes, which in turn led to the quick formation of an electric double layer at the graphene/electrolyte interface that is beneficial for modulating currents in graphene transistors at high frequencies. At the optimized conditions, the Na-DNA water-gel-gated flexible transistors and inverters were operated at frequencies above 1 MHz and 100 kHz, respectively.

  14. Nanowire Field-Effect Transistors: Sensing Simplicity?

    OpenAIRE

    Mescher, M

    2014-01-01

    Silicon nanowires are structures made from silicon with at least one spatial dimension in the nanometer regime (1-100 nm). From these nanowires, silicon nanowire field-effect transistors can be constructed. Since their introduction in 2001 silicon nanowire field-effect transistors have been studied because of their promising application as selective sensors for biological and chemical species. Their large surface-to-volume ratio promises an increased sensitivity compared to conventional, plan...

  15. Bipolar Transistor Tester for Physics Lab

    CERN Document Server

    Baddi, Raju

    2012-01-01

    A very simple low cost bipolar transistor tester for physics lab is given. The proposed circuit not only indicates the type of transistor(NPN/PNP) but also indicates the terminals(emitter, base and collector) using simple dual colored(Red/Green) LEDs. Color diagrams of testing procedure have been given for easy following. This article describes the construction of this apparatus in all detail with schematic circuit diagram, circuit layout and constructional illustration.

  16. DC operating points of transistor circuits

    Science.gov (United States)

    Trajkovic, Ljiljana

    Finding a circuit's dc operating points is an essential step in its design and involves solving systems of nonlinear algebraic equations. Of particular research and practical interests are dc analysis and simulation of electronic circuits consisting of bipolar junction and field-effect transistors (BJTs and FETs), which are building blocks of modern electronic circuits. In this paper, we survey main theoretical results related to dc operating points of transistor circuits and discuss numerical methods for their calculation.

  17. Hysteresis of Electronic Transport in Graphene Transistors

    OpenAIRE

    Wang, Haomin; Wu, Yihong; Cong, Chunxiao; Shang, Jingzhi; Yu, Ting

    2010-01-01

    Graphene field effect transistors commonly comprise graphene flakes lying on SiO2 surfaces. The gate-voltage dependent conductance shows hysteresis depending on the gate sweeping rate/range. It is shown here that the transistors exhibit two different kinds of hysteresis in their electrical characteristics. Charge transfer causes a positive shift in the gate voltage of the minimum conductance, while capacitive gating can cause the negative shift of conductance with respect to gate voltage. The...

  18. Floating gate transistors as biosensors (Conference Presentation)

    Science.gov (United States)

    Frisbie, C. Daniel

    2016-11-01

    Electrolyte gated transistors (EGTs) are a sub-class of thin film transistors that are extremely promising for biological sensing applications. These devices employ a solid electrolyte as the gate insulator; the very large capacitance of the electrolyte results in low voltage operation and high transconductance or gain. This talk will describe the fabrication of floating gate EGTs and their use as ricin sensors. The critical performance metrics for EGTs compared with other types of TFTs will also be reviewed.

  19. Bipolar transistor in VESTIC technology: prototype

    Science.gov (United States)

    Mierzwiński, Piotr; Kuźmicz, Wiesław; Domański, Krzysztof; Tomaszewski, Daniel; Głuszko, Grzegorz

    2016-12-01

    VESTIC technology is an alternative for traditional CMOS technology. This paper presents first measurement data of prototypes of VES-BJT: bipolar transistors in VESTIC technology. The VES-BJT is a bipolar transistor on the SOI substrate with symmetric lateral structure and both emitter and collector made of polysilicon. The results indicate that VES-BJT can be a device with useful characteristics. Therefore, VESTIC technology has the potential to become a new BiCMOS-type technology with some unique properties.

  20. Boron Arsenide and Boron Phosphide for High Temperature and Luminescent Devices. [semiconductor devices - crystal growth/crystal structure

    Science.gov (United States)

    Chu, T. L.

    1975-01-01

    The crystal growth of boron arsenide and boron phosphide in the form of bulk crystals and epitaxial layers on suitable substrates is discussed. The physical, chemical, and electrical properties of the crystals and epitaxial layers are examined. Bulk crystals of boron arsenide were prepared by the chemical transport technique, and their carrier concentration and Hall mobility were measured. The growth of boron arsenide crystals from high temperature solutions was attempted without success. Bulk crystals of boron phosphide were also prepared by chemical transport and solution growth techniques. Techniques required for the fabrication of boron phosphide devices such as junction shaping, diffusion, and contact formation were investigated. Alloying techniques were developed for the formation of low-resistance ohmic contacts to boron phosphide. Four types of boron phosphide devices were fabricated: (1) metal-insulator-boron phosphide structures, (2) Schottky barriers; (3) boron phosphide-silicon carbide heterojunctions; and (4) p-n homojunctions. Easily visible red electroluminescence was observed from both epitaxial and solution grown p-n junctions.

  1. Temas de Física para Ingeniería: El transistor de unión

    OpenAIRE

    Beléndez Vázquez, Augusto; Pastor Antón, Carlos; Martín García, Agapito

    1990-01-01

    El transistor de unión bipolar. Tensiones y corrientes en el transistor. El transistor como amplificador. El transistor como conmutador. Transistores unipolares o de efecto de campo. El tiristor. Microelectrónica y circuitos integrados.

  2. Thermo-chemical properties and electrical resistivity of Zr-based arsenide chalcogenides

    Directory of Open Access Journals (Sweden)

    A. Schlechte, R. Niewa, M. Schmidt, G. Auffermann, Yu. Prots, W. Schnelle, D. Gnida, T. Cichorek, F. Steglich and R. Kniep

    2007-01-01

    Full Text Available Ternary phases in the systems Zr–As–Se and Zr–As–Te were studied using single crystals of ZrAs1.40(1Se0.50(1 and ZrAs1.60(2Te0.40(1 (PbFCl-type of structure, space group P4/nmm as well as ZrAs0.70(1Se1.30(1 and ZrAs0.75(1Te1.25(1 (NbPS-type of structure, space group Immm. The characterization covers chemical compositions, crystal structures, homogeneity ranges and electrical resistivities. At 1223 K, the Te-containing phases can be described with the general formula ZrAsxTe2−x, with 1.53(1≤x≤1.65(1 (As-rich and 0.58(1≤x≤0.75(1 (Te-rich. Both phases are located directly on the tie-line between ZrAs2 and ZrTe2, with no indication for any deviation. Similar is true for the Se-rich phase ZrAsxSe2−x with 0.70(1≤x≤0.75(1. However, the compositional range of the respective As-rich phase ZrAsx−ySe2−x (0.03(1≤y≤0.10(1; 1.42(1≤x≤1.70(1 is not located on the tie-line ZrAs2–ZrSe2, and exhibits a triangular region of existence with intrinsic deviation of the composition towards lower non-metal contents. Except for ZrAs0.75Se1.25, from the homogeneity range of the Se-rich phase, all compounds under investigation show metallic characteristics of electrical resistivity at temperatures >20 K. Related uranium and thorium arsenide selenides display a typical magnetic field-independent rise of the resistivity towards lower temperatures, which has been explained by a non-magnetic Kondo effect. However, a similar observation has been made for ZrAs1.40Se0.50, which, among the Zr-based arsenide chalcogenides, is the only system with a large concentration of intrinsic defects in the anionic substructure.

  3. Transistor circuit increases range of logarithmic current amplifier

    Science.gov (United States)

    Gilmour, G.

    1966-01-01

    Circuit increases the range of a logarithmic current amplifier by combining a commercially available amplifier with a silicon epitaxial transistor. A temperature compensating network is provided for the transistor.

  4. Radiation-induced edge effects in deep submicron CMOS transistors

    CERN Document Server

    Faccio, F

    2005-01-01

    The study of the TID response of transistors and isolation test structures in a 130 nm commercial CMOS technology has demonstrated its increased radiation tolerance with respect to older technology nodes. While the thin gate oxide of the transistors is extremely tolerant to dose, charge trapping at the edge of the transistor still leads to leakage currents and, for the narrow channel transistors, to significant threshold voltage shift-an effect that we call Radiation Induced Narrow Channel Effect (RINCE).

  5. Polyphosphonium-based ion bipolar junction transistors.

    Science.gov (United States)

    Gabrielsson, Erik O; Tybrandt, Klas; Berggren, Magnus

    2014-11-01

    Advancements in the field of electronics during the past few decades have inspired the use of transistors in a diversity of research fields, including biology and medicine. However, signals in living organisms are not only carried by electrons but also through fluxes of ions and biomolecules. Thus, in order to implement the transistor functionality to control biological signals, devices that can modulate currents of ions and biomolecules, i.e., ionic transistors and diodes, are needed. One successful approach for modulation of ionic currents is to use oppositely charged ion-selective membranes to form so called ion bipolar junction transistors (IBJTs). Unfortunately, overall IBJT device performance has been hindered due to the typical low mobility of ions, large geometries of the ion bipolar junction materials, and the possibility of electric field enhanced (EFE) water dissociation in the junction. Here, we introduce a novel polyphosphonium-based anion-selective material into npn-type IBJTs. The new material does not show EFE water dissociation and therefore allows for a reduction of junction length down to 2 μm, which significantly improves the switching performance of the ion transistor to 2 s. The presented improvement in speed as well the simplified design will be useful for future development of advanced iontronic circuits employing IBJTs, for example, addressable drug-delivery devices.

  6. High Accuracy Transistor Compact Model Calibrations

    Energy Technology Data Exchange (ETDEWEB)

    Hembree, Charles E. [Sandia National Laboratories (SNL-NM), Albuquerque, NM (United States); Mar, Alan [Sandia National Laboratories (SNL-NM), Albuquerque, NM (United States); Robertson, Perry J. [Sandia National Laboratories (SNL-NM), Albuquerque, NM (United States)

    2015-09-01

    Typically, transistors are modeled by the application of calibrated nominal and range models. These models consists of differing parameter values that describe the location and the upper and lower limits of a distribution of some transistor characteristic such as current capacity. Correspond- ingly, when using this approach, high degrees of accuracy of the transistor models are not expected since the set of models is a surrogate for a statistical description of the devices. The use of these types of models describes expected performances considering the extremes of process or transistor deviations. In contrast, circuits that have very stringent accuracy requirements require modeling techniques with higher accuracy. Since these accurate models have low error in transistor descriptions, these models can be used to describe part to part variations as well as an accurate description of a single circuit instance. Thus, models that meet these stipulations also enable the calculation of quantifi- cation of margins with respect to a functional threshold and uncertainties in these margins. Given this need, new model high accuracy calibration techniques for bipolar junction transis- tors have been developed and are described in this report.

  7. Triamidoamine thorium-arsenic complexes with parent arsenide, arsinidiide and arsenido structural motifs

    Science.gov (United States)

    Wildman, Elizabeth P.; Balázs, Gábor; Wooles, Ashley J.; Scheer, Manfred; Liddle, Stephen T.

    2017-03-01

    Despite a major expansion of uranium-ligand multiple bond chemistry in recent years, analogous complexes involving other actinides (An) remain scarce. For thorium, under ambient conditions only a few multiple bonds to carbon, nitrogen, phosphorus and chalcogenides are reported, and none to arsenic are known; indeed only two complexes with thorium-arsenic single bonds have been structurally authenticated, reflecting the challenges of stabilizing polar linkages at the large thorium ion. Here, we report thorium parent-arsenide (ThAsH2), -arsinidiides (ThAs(H)K and ThAs(H)Th) and arsenido (ThAsTh) linkages stabilized by a bulky triamidoamine ligand. The ThAs(H)K and ThAsTh linkages exhibit polarized-covalent thorium-arsenic multiple bonding interactions, hitherto restricted to cryogenic matrix isolation experiments, and the AnAs(H)An and AnAsAn linkages reported here have no precedent in f-block chemistry. 7s, 6d and 5f orbital contributions to the Th-As bonds are suggested by quantum chemical calculations, and their compositions unexpectedly appear to be tensioned differently compared to phosphorus congeners.

  8. Modelling of the small pixel effect in gallium arsenide X-ray imaging detectors

    CERN Document Server

    Sellin, P J

    1999-01-01

    A Monte Carlo simulation has been carried out to investigate the small pixel effect in highly pixellated X-ray imaging detectors fabricated from semi-insulating gallium arsenide. The presence of highly non-uniform weighting fields in detectors with a small pixel geometry causes the majority of the induced signal to be generated when the moving charges are close to the pixellated contacts. The response of GaAs X-ray imaging detectors is further complicated by the presence of charge trapping, particularly of electrons. In this work detectors are modelled with a pixel pitch of 40 and 150 mu m, and with thicknesses of 300 and 500 mu m. Pulses induced in devices with 40 mu m pixels are due almost totally to the movement of the lightly-trapped holes and can exhibit significantly higher charge collection efficiencies than detectors with large electrodes, in which electron trapping is significant. Details of the charge collection efficiencies as a function of interaction depth in the detector and of the incident phot...

  9. Triamidoamine thorium-arsenic complexes with parent arsenide, arsinidiide and arsenido structural motifs

    Science.gov (United States)

    Wildman, Elizabeth P.; Balázs, Gábor; Wooles, Ashley J.; Scheer, Manfred; Liddle, Stephen T.

    2017-01-01

    Despite a major expansion of uranium–ligand multiple bond chemistry in recent years, analogous complexes involving other actinides (An) remain scarce. For thorium, under ambient conditions only a few multiple bonds to carbon, nitrogen, phosphorus and chalcogenides are reported, and none to arsenic are known; indeed only two complexes with thorium–arsenic single bonds have been structurally authenticated, reflecting the challenges of stabilizing polar linkages at the large thorium ion. Here, we report thorium parent–arsenide (ThAsH2), –arsinidiides (ThAs(H)K and ThAs(H)Th) and arsenido (ThAsTh) linkages stabilized by a bulky triamidoamine ligand. The ThAs(H)K and ThAsTh linkages exhibit polarized-covalent thorium–arsenic multiple bonding interactions, hitherto restricted to cryogenic matrix isolation experiments, and the AnAs(H)An and AnAsAn linkages reported here have no precedent in f-block chemistry. 7s, 6d and 5f orbital contributions to the Th–As bonds are suggested by quantum chemical calculations, and their compositions unexpectedly appear to be tensioned differently compared to phosphorus congeners. PMID:28276437

  10. Evaluation of a gallium arsenide solar panel on the LIPS II satellite

    Energy Technology Data Exchange (ETDEWEB)

    Trumble, T.M.; Betz, F.

    1984-05-01

    On 10 February 1983 the Living Plume Shield (LIPS II) satellite was launched by the Naval Research Laboratory with three double sided solar panels providing electrical power. One side of one panel contains 300 2cm X 2cm gallium arsenide (GaAs) solar cells while each of the other five sides contain 104 2.1cm X 6.2cm silicon (Si) solar cells. The U.S. Air Force developed GaAs cells were provided to the Navy in a cooperative program to build, test, qualify and fly a GaAs solar panel. Nineteen months after the beginning of the cooperative program the vehicle was launched. There are considerable statistical variances in the data and data cannot be acquired continuously owing to the requirement to be over a tracking station while the GaAs panel is facing the sun. The first 30 days of operation were unmeasured due to satellite orientation problems. The first measurements indicated a 7.3% power loss in panel performance compared to ground preflight measurements. This loss is still unexplained. This paper provides a summary of the LIPS II program and the data analysis on the GaAs solar panel performance for the first year in orbit.

  11. Monopole Charge Domain in High-Gain Gallium Arsenide Photoconductive Switches

    Institute of Scientific and Technical Information of China (English)

    施卫; 陈二柱; 张显斌; 李琦

    2002-01-01

    Considering that semi-insulating gallium arsenide photoconductive switches can be triggered into the high gain mode and no reliable theories can account for the observed transient characteristics, we propose the monopole charge domain model to explain the peculiar switching phenomena occurring in the high gain mode and we discuss the requirements for the lock-on switching. During operation on this mode, the applied field across the switch and the lock-on field are all larger than the Gunn threshold field. Our developed monopole charge domain is based on the transferred-electron effect, but the domain is only composed of large numbers of electrons piled up due to the negative differential mobility. Using the model and taking the physical mechanism of the avalanche impact ionization and recombination radiation into consideration, we interpret the typical phenomena of the lock-on effect, such as the time delay between the beginning of optical illumination and turning-on of the switch, and the conduction mechanism of the sustaining phase. Under different conditions of bias field intensity and incident light energy, the time delay of the switching is calculated. The results show that the physical mechanisms of impact ionization and recombination radiation occurring in the monopole charge domain are responsible for the lock-on switching.

  12. Superconductivity in the ternary iridium-arsenide BaIr2As2

    Science.gov (United States)

    Wang, Xiao-Chuan; Ruan, Bin-Bin; Yu, Jia; Pan, Bo-Jin; Mu, Qing-Ge; Liu, Tong; Chen, Gen-Fu; Ren, Zhi-An

    2017-03-01

    Here we report the synthesis and discovery of superconductivity in a novel ternary iridium-arsenide compound BaIr2As2. The polycrystalline BaIr2As2 sample was first synthesized by a high temperature and high pressure method. Crystal structural analysis indicates that BaIr2As2 crystallizes in the ThCr2Si2-type layered tetragonal structure with space group I4/mmm (No. 139), and the lattice parameters were refined to be a = 4.052(9) Å and c = 12.787(8) Å. By the electrical resistivity and magnetic susceptibility measurements we found type-II superconductivity in the new BaIr2As2 compound with a T c (critical temperature) of 2.45 K, and an upper critical field μ 0 H c2(0) about 0.2 T. Low temperature specific heat measurements gave a Debye temperature of about 202 K and a distinct specific jump with ΔC e /γT c = 1.36, which is close to the value of BCS weak coupling limit and confirms the bulk superconductivity in this new BaIr2As2 compound.

  13. Ab-initio Electronic, Transport and Related Properties of Zinc Blende Boron Arsenide (zb-BAs)

    Science.gov (United States)

    Nwigboji, Ifeanyi H.; Malozovsky, Yuriy; Bagayoko, Diola

    We present results from ab-initio, self-consistent density functional theory (DFT) calculations of electronic, transport, and bulk properties of zinc blende boron arsenide (zb-BAs). We utilized a local density approximation (LDA) potential and the linear combination of atomic orbital (LCAO) formalism. Our computational technique follows the Bagayoko, Zhao, and Williams method, as enhanced by Ekuma and Franklin. Our results include electronic energy bands, densities of states, and effective masses. We explain the agreement between these findings, including the indirect band gap, and available, corresponding, experimental ones. This work confirms the capability of DFT to describe accurately properties of materials, provided the computations adhere to the conditions of validity of DFT [AIP Advances, 4, 127104 (2014)]. Acknowledgments: This work was funded in part by the National Science Foundation (NSF) and the Louisiana Board of Regents, through LASiGMA [Award Nos. EPS- 1003897, NSF (2010-15)-RII-SUBR] and NSF HRD-1002541, the US Department of Energy - National, Nuclear Security Administration (NNSA) (Award No. DE- NA0002630), LaSPACE, and LONI-SUBR.

  14. Nonlinear radiation response of n-doped indium antimonide and indium arsenide in intense terahertz field

    Science.gov (United States)

    Gong, Jiao-Li; Liu, Jin-Song; Chu, Zheng; Yang, Zhen-Gang; Wang, Ke-Jia; Yao, Jian-Quan

    2016-10-01

    The nonlinear radiation responses of two different n-doped bulk semiconductors: indium antimonide (InSb) and indium arsenide (InAs) in an intense terahertz (THz) field are studied by using the method of ensemble Monte Carlo (EMC) at room temperature. The results show that the radiations of two materials generate about 2-THz periodic regular spectrum distributions under a high field of 100 kV/cm at 1-THz center frequency. The center frequencies are enhanced to about 7 THz in InSb, and only 5 THz in InAs, respectively. The electron valley occupancy and the percentage of new electrons excited by impact ionization are also calculated. We find that the band nonparabolicity and impact ionization promote the generation of nonlinear high frequency radiation, while intervalley scattering has the opposite effect. Moreover, the impact ionization dominates in InSb, while impact ionization and intervalley scattering work together in InAs. These characteristics have potential applications in up-convension of THz wave and THz nonlinear frequency multiplication field. Project supported by the National Natural Science Foundation of China (Grant Nos. 11574105 and 61177095), the Natural Science Foundation of Hubei Province, China (Grant Nos. 2012FFA074 and 2013BAA002), the Wuhan Municipal Applied Basic Research Project, China (Grant No. 20140101010009), and the Fundamental Research Funds for the Central Universities, China (Grant Nos. 2013KXYQ004 and 2014ZZGH021).

  15. Fabrication and applications of orientation-patterned gallium arsenide for mid-infrared generation

    Energy Technology Data Exchange (ETDEWEB)

    Grisard, A.; Gutty, F.; Lallier, E. [Thales Research and Technology France, 1 av. Augustin Fresnel, 91767 Palaiseau Cedex (France); Gerard, B. [III-V Lab, 1 av. Augustin Fresnel, 91767 Palaiseau Cedex (France); Jimenez, J. [GdS Optronlab, Fisica Materia Condensada, Universidad de Valladolid, 47011 Valladolid (Spain)

    2012-07-15

    Nonlinear optical materials play a key role in the development of coherent sources of radiation, by frequency conversion of light from other light sources, e.g. diode, solid-state, and fiber lasers, into spectral ranges where few lasers exist or perform poorly. Based on the principle of the quasi-phase matching, the design and fabrication of orientation-patterned Gallium Arsenide crystals (OP-GaAs) has recently led to demonstrations of second harmonic generation, optical parametric generation, amplification and oscillation from 1 to 12 {mu}m. The most efficient fabrication route for these crystals relies on the use of the near-equilibrium growth process HVPE (Hydride Vapour Phase Epitaxy), by orientation-selective regrowth on OP-GaAs template wafers with a thickness suited to bulk nonlinear optics. This work deals with recent characterizations based on optical experiments and cathodoluminescence measurements, targeting the identification of the main defects, their spatial distribution, and their relation to the optical propagation losses. Latest improvements of the HVPE growth step have enabled to reach an unprecedented level of losses, below 0.016 cm{sup -1}, and a large range of available QPM periods and thickness of structures (copyright 2012 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  16. Discrete transistor measuring and matching using a solid core oven.

    Science.gov (United States)

    Inkinen, M; Mäkelä, K; Vuorela, T; Palovuori, K

    2013-03-01

    This paper presents transistor measurements done at a constant temperature. The aim in this research was to develop a reliable and repeatable method for measuring and searching transistor pairs with similar parameters, as in certain applications it is advantageous to use transistors from the same production batch due to the significant variability in batches from different manufacturers. Transistor manufacturing methods are well established, but due to the large variability in tolerance, not even transistors from the same manufacturing batch have identical properties. Transistors' electrical properties are also strongly temperature-dependent. Therefore, when measuring transistor properties, the temperature must be kept constant. For the measurement process, a solid-core oven providing stable temperature was implemented. In the oven, the base-to-emitter voltage (VBE) and DC-current gain (β) of 32 transistors could be measured simultaneously. The oven's temperature was controlled with a programmable thermostat, which allowed accurate constant temperature operation. The oven is formed by a large metal block with an individual chamber for each transistor to be measured. Isolation of individual transistors and the highly thermally conductive metal core structure prevent thermal coupling between transistors. The oven enables repeatable measurements, and thus measurements between different batches are comparable. In this research study, the properties of over 5000 transistors were measured and the variance of the aforementioned properties was analyzed.

  17. Fundamentals of nanoscaled field effect transistors

    CERN Document Server

    Chaudhry, Amit

    2013-01-01

    Fundamentals of Nanoscaled Field Effect Transistors gives comprehensive coverage of the fundamental physical principles and theory behind nanoscale transistors. The specific issues that arise for nanoscale MOSFETs, such as quantum mechanical tunneling and inversion layer quantization, are fully explored. The solutions to these issues, such as high-κ technology, strained-Si technology, alternate devices structures and graphene technology are also given. Some case studies regarding the above issues and solution are also given in the book. In summary, this book: Covers the fundamental principles behind nanoelectronics/microelectronics Includes chapters devoted to solutions tackling the quantum mechanical effects occurring at nanoscale Provides some case studies to understand the issue mathematically Fundamentals of Nanoscaled Field Effect Transistors is an ideal book for researchers and undergraduate and graduate students in the field of microelectronics, nanoelectronics, and electronics.

  18. TRANSISTOR IMPLEMENTATION OF REVERSIBLE PRT GATES

    Directory of Open Access Journals (Sweden)

    RASHMI S.B,

    2011-03-01

    Full Text Available Reversible logic has emerged as one of the most important approaches for power optimization with its application in low power VLSI design. Reversible or information lossless circuits have applications in nanotechnology, digital signal processing, communication, computer graphics and cryptography. They are also a fundamental requirement in the emerging field of quantum computing. In this paper, two newoptimized universal gates are proposed. One of them has an ability to operate as a reversible half adder and half subtractor imultaneously. Another one acts only as half adder with minimum transistor count. The reversible gates are evaluated in terms of number of transistor count, critical path, garbage outputs and one to one mapping. Here transistor implementation of the proposed gates is done by using Virtuoso tool of cadence. Based on the results of the analysis, some of the trade-offs are made in the design to improve the efficiency.

  19. Switching Characteristics of Ferroelectric Transistor Inverters

    Science.gov (United States)

    Laws, Crystal; Mitchell, Coey; MacLeod, Todd C.; Ho, Fat D.

    2010-01-01

    This paper presents the switching characteristics of an inverter circuit using a ferroelectric field effect transistor, FeFET. The propagation delay time characteristics, phl and plh are presented along with the output voltage rise and fall times, rise and fall. The propagation delay is the time-delay between the V50% transitions of the input and output voltages. The rise and fall times are the times required for the output voltages to transition between the voltage levels V10% and V90%. Comparisons are made between the MOSFET inverter and the ferroelectric transistor inverter.

  20. Going ballistic: Graphene hot electron transistors

    Science.gov (United States)

    Vaziri, S.; Smith, A. D.; Östling, M.; Lupina, G.; Dabrowski, J.; Lippert, G.; Mehr, W.; Driussi, F.; Venica, S.; Di Lecce, V.; Gnudi, A.; König, M.; Ruhl, G.; Belete, M.; Lemme, M. C.

    2015-12-01

    This paper reviews the experimental and theoretical state of the art in ballistic hot electron transistors that utilize two-dimensional base contacts made from graphene, i.e. graphene base transistors (GBTs). Early performance predictions that indicated potential for THz operation still hold true today, even with improved models that take non-idealities into account. Experimental results clearly demonstrate the basic functionality, with on/off current switching over several orders of magnitude, but further developments are required to exploit the full potential of the GBT device family. In particular, interfaces between graphene and semiconductors or dielectrics are far from perfect and thus limit experimental device integrity, reliability and performance.

  1. Static Characteristics of the Ferroelectric Transistor Inverter

    Science.gov (United States)

    Mitchell, Cody; Laws, crystal; MacLeond, Todd C.; Ho, Fat D.

    2010-01-01

    The inverter is one of the most fundamental building blocks of digital logic, and it can be used as the foundation for understanding more complex logic gates and circuits. This paper presents the characteristics of an inverter circuit using a ferroelectric field-effect transistor. The voltage transfer characteristics are analyzed with respect to varying parameters such as supply voltage, input voltage, and load resistance. The effects of the ferroelectric layer between the gate and semiconductor are examined, and comparisons are made between the inverters using ferroelectric transistors and those using traditional MOSFETs.

  2. VHDL simulation with access to transistor models

    Science.gov (United States)

    Gibson, J.

    1991-01-01

    Hardware description languages such as VHDL have evolved to aid in the design of systems with large numbers of elements and a wide range of electronic and logical abstractions. For high performance circuits, behavioral models may not be able to efficiently include enough detail to give designers confidence in a simulation's accuracy. One option is to provide a link between the VHDL environment and a transistor level simulation environment. The coupling of the Vantage Analysis Systems VHDL simulator and the NOVA simulator provides the combination of VHDL modeling and transistor modeling.

  3. Bipolar effects in unipolar junctionless transistors

    Science.gov (United States)

    Parihar, Mukta Singh; Ghosh, Dipankar; Armstrong, G. Alastair; Yu, Ran; Razavi, Pedram; Kranti, Abhinav

    2012-08-01

    In this work, we analyze hysteresis and bipolar effects in unipolar junctionless transistors. A change in subthreshold drain current by 5 orders of magnitude is demonstrated at a drain voltage of 2.25 V in silicon junctionless transistor. Contrary to the conventional theory, increasing gate oxide thickness results in (i) a reduction of subthreshold slope (S-slope) and (ii) an increase in drain current, due to bipolar effects. The high sensitivity to film thickness in junctionless devices will be most crucial factor in achieving steep transition from ON to OFF state.

  4. Fundamentals of RF and microwave transistor amplifiers

    CERN Document Server

    Bahl, Inder J

    2009-01-01

    A Comprehensive and Up-to-Date Treatment of RF and Microwave Transistor Amplifiers This book provides state-of-the-art coverage of RF and microwave transistor amplifiers, including low-noise, narrowband, broadband, linear, high-power, high-efficiency, and high-voltage. Topics covered include modeling, analysis, design, packaging, and thermal and fabrication considerations. Through a unique integration of theory and practice, readers will learn to solve amplifier-related design problems ranging from matching networks to biasing and stability. More than 240 problems are included to help read

  5. A comparison of the kink effect in polysilicon thin film transistors and silicon on insulator transistors

    Science.gov (United States)

    Armstrong, G. A.; Brotherton, S. D.; Ayres, J. R.

    1996-09-01

    Polysilicon thin film transistors (TFTs) differ from conventional silicon on insulator (SOI) transistors in that the TFT exhibits a fundamental gate length dependence of the voltage at which a kink occurs in the output characteristics. This difference is shown to be caused by the peak lateral electric field being strongly dependent on the doping density in an SOI transistor, but relatively insensitive to trap distribution in a TFT. Source barrier lowering which occurs in SOI transistors is absent in a TFT, where the increase in current is the result of a field redistribution along the channel. For very short gate lengths, the TFT exhibits a small pseudo-bipolar gain. Estimates of this bipolar gain can be made by simulation of TFT characteristics with and without impact ionisation. The magnitude of the gain is shown to be approximately inversely proportional to gate length.

  6. Utilizing nonlinearity of transistors for reconfigurable chaos computation

    Science.gov (United States)

    Ditto, William; Kia, Behnam

    2014-03-01

    A VLSI circuit design for chaos computing is presented that exploits the intrinsic nonlinearity of transistors to implement a novel approach for conventional and chaotic computing circuit design. In conventional digital circuit design and implementation, transistors are simply switched on or off. We argue that by using the full range of nonlinear dynamics of transistors, we can design and build more efficient computational elements and logic blocks. Furthermore, the nonlinearity of these transistor circuits can be used to program the logic block to implement different types of computational elements that can be reconfigured. Because the intrinsic nonlinear dynamics of the transistors are utilized the resulting circuits typically require fewer transistors compared to conventional digital circuits as we exploit the intrinsic nonlinearity of the transistors to realize computations. This work was done with support from ONR grant N00014-12-1-0026 and from an ONR STTR and First Pass Engineering.

  7. Transistor-based particle detection systems and methods

    Science.gov (United States)

    Jain, Ankit; Nair, Pradeep R.; Alam, Muhammad Ashraful

    2015-06-09

    Transistor-based particle detection systems and methods may be configured to detect charged and non-charged particles. Such systems may include a supporting structure contacting a gate of a transistor and separating the gate from a dielectric of the transistor, and the transistor may have a near pull-in bias and a sub-threshold region bias to facilitate particle detection. The transistor may be configured to change current flow through the transistor in response to a change in stiffness of the gate caused by securing of a particle to the gate, and the transistor-based particle detection system may configured to detect the non-charged particle at least from the change in current flow.

  8. Field-effect transistor self-electrooptic effect device integrated photodiode, quantum well modulator and transistor

    Energy Technology Data Exchange (ETDEWEB)

    Miller, D.A.B.; Feuer, M.D.; Chang, T.Y.; Shunk, S.C.; Henry, J.E.; Burrows, D.J.; Chemla, D.S.

    1989-03-01

    The authors propose and demonstrate the integration of a photodiode, a quantum-confined Stark effect quantum well optical modulator and a metal-semiconductor field-effect transistor (MESFET), to make a field-effect transistor self-electrooptic effect device. This integration allows optical inputs and outputs on the surface of a GaAs-integrated circuit chip, compatible with standard MESFET processing. As an illustration of feasibility, the authors demonstrate optical signal amplification with a single MESFET.

  9. A highly sensitive spin-valve transistor

    NARCIS (Netherlands)

    Erve, van 't O.M.J.; Vlutters, R.; Anil Kumar, P.S.; Kim, S.D.; Jansen, R.; Lodder, J.C.; Hadjipanayis, G.C.

    2001-01-01

    In this paper we present a spin-valve transistor made with a silicon on insulator wafer as emitter and a double sided polished Si wafer as collector. Using vacuum metal bonding we obtain a three terminal device in which a spin-valve layer is sandwiched between two Si wafers. We measure a 217% change

  10. Thermal transistor utilizing gas-liquid transition

    KAUST Repository

    Komatsu, Teruhisa S.

    2011-01-25

    We propose a simple thermal transistor, a device to control heat current. In order to effectively change the current, we utilize the gas-liquid transition of the heat-conducting medium (fluid) because the gas region can act as a good thermal insulator. The three terminals of the transistor are located at both ends and the center of the system, and are put into contact with distinct heat baths. The key idea is a special arrangement of the three terminals. The temperature at one end (the gate temperature) is used as an input signal to control the heat current between the center (source, hot) and another end (drain, cold). Simulating the nanoscale systems of this transistor, control of heat current is demonstrated. The heat current is effectively cut off when the gate temperature is cold and it flows normally when it is hot. By using an extended version of this transistor, we also simulate a primitive application for an inverter. © 2011 American Physical Society.

  11. Amorphous silicon for thin-film transistors

    NARCIS (Netherlands)

    Schropp, Rudolf Emmanuel Isidore

    1987-01-01

    Hydrogenated amorphous silicon (a-Si:H) has considerable potential as a semiconducting material for large-area photoelectric and photovoltaic applications. Moreover, a-Si:H thin-film transistors (TFT’s) are very well suited as switching devices in addressable liquid crystal display panels and addres

  12. Electrostatic Discharge Effects in Thin Film Transistors

    NARCIS (Netherlands)

    Golo, Natasa

    2002-01-01

    Although amorphous silicon thin film transistors (α-Si:H TFT’s) have a very low electron mobility and pronounced instabilities of their electrical characteristics, they are still very useful and they have found their place in the semiconductors industry, as they possess some very good properties: th

  13. Design, Fabrication, and Characterization of 0.1 Micrometer Gallium Arsenide Mesfet's.

    Science.gov (United States)

    Moore, Karen Elizabeth

    Very high performance 0.1 μm GaAs-based MESFET's have been designed, fabricated, and characterized in order to obtain an improved understanding of the full potential of these devices and the effects of process variations and layer structures on device performance. The FET's were fabricated with both "mushroom" and "gamma" gates using a bi-layer (PMMA/P(MMA-MAA)) electron beam lithography process. Process variations, including gate size, shape, and location, and gate recess depth, were systematically evaluated in GaAs FET's through DC and RF transistor performance, biased and un-biased equivalent circuit parameters, and transistor minimum noise figure. The bias dependence of the devices was studied using the results of cold de-embedding to determine intrinsic and extrinsic equivalent circuit values. These bias variations were related back to DC and RF device performance, in order to better understand how to optimize the biasing of a GaAs MESFET. The performance of the devices fabricated and tested was world class, with maximum f_sp {t}{'}s over 100 GHz, f_sp{max}{'}s over 150 GHz, and little sensitivity to process variations. This demonstrates the continued importance of GaAs and GaAs based MESFET's as high performance microwave devices with large scale commercial potential.

  14. Development of devices and systems of growth of gallium arsenide ingots for micro, nano electronics and photovoltaics

    Directory of Open Access Journals (Sweden)

    A. P. Oksanich

    2013-09-01

    Full Text Available Gallium arsenide is a perspective semiconductor, the need for which is constantly increasing. This is associated with the development of electronic components operating in excess of the high frequency range and development of terrestrial photovoltaics based on gallium arsenide solar cells. Increase in diameter of grown ingots leads to a deterioration in their performance, which is caused by the imperfection of growing technology. The paper presents the results of the development of systems and devices which help to improve existing technology to produce GaAs ingots and wafers with a diameter of 100 mm with the best technical parameters. Developed a system to manage growing GaAs ingot. As a sensor of diameter ingot it uses a weighting method provides a measurement error in the process of growing ± 1,0 mm. The system allows to grow GaAs ingots with an error of ± 2 mm. For the formation of temperature gradients developed thermal unit, which provides a gradient of 51 .. 53 K cm in growing of ingots with diameter of 100 mm. For adjusting the process parameters were developed measuring device of the internal stresses that are generated in the ingot during the growth of the GaAs ingot. Presented in paper technical solutions provided a silicon ingot with a diameter of 100 mm. with mobility, cm2 V-1 s-1 - 2500 ÷ 3500, the charge carrier density, cm-3 - 5x1017 ÷ 5x1018; dislocation density, cm-2 - to 8x104.

  15. Phase diagram of (Li(1-x)Fe(x))OHFeSe: a bridge between iron selenide and arsenide superconductors.

    Science.gov (United States)

    Dong, Xiaoli; Zhou, Huaxue; Yang, Huaixin; Yuan, Jie; Jin, Kui; Zhou, Fang; Yuan, Dongna; Wei, Linlin; Li, Jianqi; Wang, Xinqiang; Zhang, Guangming; Zhao, Zhongxian

    2015-01-14

    Previous experimental results have shown important differences between iron selenide and arsenide superconductors which seem to suggest that the high-temperature superconductivity in these two subgroups of iron-based families may arise from different electronic ground states. Here we report the complete phase diagram of a newly synthesized superconducting (SC) system, (Li1-xFex)OHFeSe, with a structure similar to that of FeAs-based superconductors. In the non-SC samples, an antiferromagnetic (AFM) spin-density-wave (SDW) transition occurs at ∼127 K. This is the first example to demonstrate such an SDW phase in an FeSe-based superconductor system. Transmission electron microscopy shows that a well-known √5×√5 iron vacancy ordered state, resulting in an AFM order at ∼500 K in AyFe2-xSe2 (A = metal ions) superconductor systems, is absent in both non-SC and SC samples, but a unique superstructure with a modulation wave vector q = (1)/2(1,1,0), identical to that seen in the SC phase of KyFe2-xSe2, is dominant in the optimal SC sample (with an SC transition temperature Tc = 40 K). Hence, we conclude that the high-Tc superconductivity in (Li1-xFex)OHFeSe stems from the similarly weak AFM fluctuations as FeAs-based superconductors, suggesting a universal physical picture for both iron selenide and arsenide superconductors.

  16. Field-effect transistors (2nd revised and enlarged edition)

    Science.gov (United States)

    Bocharov, L. N.

    The design, principle of operation, and principal technical characteristics of field-effect transistors produced in the USSR are described. Problems related to the use of field-effect transistors in various radioelectronic devices are examined, and tables of parameters and mean statistical characteristics are presented for the main types of field-effect transistors. Methods for calculating various circuit components are discussed and illustrated by numerical examples.

  17. Bipolar Charge Plasma Transistor: A Novel Three Terminal Device

    OpenAIRE

    Kumar, M. Jagadesh; Nadda, Kanika

    2012-01-01

    A distinctive approach for forming a lateral Bipolar Charge Plasma Transistor (BCPT) is explored using 2-D simulations. Different metal work-function electrodes are used to induce n- and p-type charge plasma layers on undoped SOI to form the emitter, base and collector regions of a lateral NPN transistor. Electrical characteristics of the proposed device are simulated and compared with that of a conventionally doped lateral bipolar junction transistor with identical dimensions. Our simulation...

  18. Organic Thin-Film Transistor (OTFT)-Based Sensors

    OpenAIRE

    Daniel Elkington; Nathan Cooling; Warwick Belcher; Dastoor, Paul C; Xiaojing Zhou

    2014-01-01

    Organic thin film transistors have been a popular research topic in recent decades and have found applications from flexible displays to disposable sensors. In this review, we present an overview of some notable articles reporting sensing applications for organic transistors with a focus on the most recent publications. In particular, we concentrate on three main types of organic transistor-based sensors: biosensors, pressure sensors and “e-nose”/vapour sensors.

  19. Organic Thin-Film Transistor (OTFT-Based Sensors

    Directory of Open Access Journals (Sweden)

    Daniel Elkington

    2014-04-01

    Full Text Available Organic thin film transistors have been a popular research topic in recent decades and have found applications from flexible displays to disposable sensors. In this review, we present an overview of some notable articles reporting sensing applications for organic transistors with a focus on the most recent publications. In particular, we concentrate on three main types of organic transistor-based sensors: biosensors, pressure sensors and “e-nose”/vapour sensors.

  20. Celebrating 65th Anniversary of the Transistor

    Directory of Open Access Journals (Sweden)

    Goce L. Arsov

    2013-12-01

    Full Text Available The paper is dedicated to the 65th anniversary of the invention of the revolutionary electronic component that actually changed our way of life—the transistor. It recounts the key historical moments leading up to the invention of the first semiconductor active component in 1947. The meaning of the blend “transistor” is explained using the memorandum issued by Bell Telephone Laboratories. Certain problems appeared in the engineering phase of the transistor development and the new components obtained as a result of this research are reviewed. The impact of this invention on the development of power electronics is being emphasized. Finally, the possibility that the most important invention of the 20th century has been conceived not once but twice is discussed.

  1. Vertically Integrated Multiple Nanowire Field Effect Transistor.

    Science.gov (United States)

    Lee, Byung-Hyun; Kang, Min-Ho; Ahn, Dae-Chul; Park, Jun-Young; Bang, Tewook; Jeon, Seung-Bae; Hur, Jae; Lee, Dongil; Choi, Yang-Kyu

    2015-12-09

    A vertically integrated multiple channel-based field-effect transistor (FET) with the highest number of nanowires reported ever is demonstrated on a bulk silicon substrate without use of wet etching. The driving current is increased by 5-fold due to the inherent vertically stacked five-level nanowires, thus showing good feasibility of three-dimensional integration-based high performance transistor. The developed fabrication process, which is simple and reproducible, is used to create multiple stiction-free and uniformly sized nanowires with the aid of the one-route all-dry etching process (ORADEP). Furthermore, the proposed FET is revamped to create nonvolatile memory with the adoption of a charge trapping layer for enhanced practicality. Thus, this research suggests an ultimate design for the end-of-the-roadmap devices to overcome the limits of scaling.

  2. Cylindrical-shaped nanotube field effect transistor

    KAUST Repository

    Hussain, Muhammad Mustafa

    2015-12-29

    A cylindrical-shaped nanotube FET may be manufactured on silicon (Si) substrates as a ring etched into a gate stack and filled with semiconductor material. An inner gate electrode couples to a region of the gate stack inside the inner circumference of the ring. An outer gate electrode couples to a region of the gate stack outside the outer circumference of the ring. The multi-gate cylindrical-shaped nanotube FET operates in volume inversion for ring widths below 15 nanometers. The cylindrical-shaped nanotube FET demonstrates better short channel effect (SCE) mitigation and higher performance (I.sub.on/I.sub.off) than conventional transistor devices. The cylindrical-shaped nanotube FET may also be manufactured with higher yields and cheaper costs than conventional transistors.

  3. Molecular Transistor Based on the Biphenyl Substituents

    Directory of Open Access Journals (Sweden)

    A.G. Malashenko

    2016-11-01

    Full Text Available It was investigated the physical processes in the molecules, which have properties required in case of using as molecular switches, transistors, or other electronic elements of future computers. Studies show that in the molecules of biphenyl substituents the angle between the planes of the phenyl rings depends on the magnitude of the applied external electric field. So, the ratio of squares of cosines of the angles between the phenyl groups in the field 0.01 a.u. and without field reaches 18. It significantly changes the ability of electrons to move along the long axis of the molecule. By varying the nature of the substituents, we can obtain the molecule characteristics that make these molecules promising for future using. This effect provides the use of biphenyl substitutes as transistors in electrical circuits constructed on separate molecules.

  4. Nanowire field effect transistors principles and applications

    CERN Document Server

    Jeong, Yoon-Ha

    2014-01-01

    “Nanowire Field Effect Transistor: Basic Principles and Applications” places an emphasis on the application aspects of nanowire field effect transistors (NWFET). Device physics and electronics are discussed in a compact manner, together with the p-n junction diode and MOSFET, the former as an essential element in NWFET and the latter as a general background of the FET. During this discussion, the photo-diode, solar cell, LED, LD, DRAM, flash EEPROM and sensors are highlighted to pave the way for similar applications of NWFET. Modeling is discussed in close analogy and comparison with MOSFETs. Contributors focus on processing, electrostatic discharge (ESD) and application of NWFET. This includes coverage of solar and memory cells, biological and chemical sensors, displays and atomic scale light emitting diodes. Appropriate for scientists and engineers interested in acquiring a working knowledge of NWFET as well as graduate students specializing in this subject.

  5. Carbon nanotubes field effect transistors biosensors

    OpenAIRE

    Martínez, M.T.; Tseng, Y. C.; Ormategui, N.; Loinaz, I.; Eritja Casadellà, Ramón; Salvador, Juan Pablo; Marco, María Pilar; Bokor, J.

    2012-01-01

    [EN] Carbon nanotube transistor arrays (CNTFETs) were used as biosensors to detect NA hybridization and to recognize two anabolic steroids, stanozolol (Stz) and methylboldenone (MB). Single strand DNA and antibodies specific for STz and MB were immobilized on the carbon nanotubes (CNTs) in situ in the device using two different approaches: direct noncovalent bonding of antibodies to the devices and covalently trough a polymer previously attached to the CNTFETs. A new approach to ensure specif...

  6. Lithography-free fabrication of carbon nanotube network transistors

    Energy Technology Data Exchange (ETDEWEB)

    Timmermans, Marina Y; Nasibulin, Albert G; Kauppinen, Esko I [NanoMaterials Group, Department of Applied Physics and Center for New Materials, Aalto University School of Science and Technology, PO Box 15100, 00076 Aalto (Finland); Grigoras, Kestutis; Franssila, Sami [Microfabrication Group, Department of Materials Science and Engineering, Aalto University School of Science and Technology, PL 13000, 00076 Aalto (Finland); Hurskainen, Ville; Ermolov, Vladimir, E-mail: marina.timmermans@hut.fi, E-mail: kestas.grigoras@tkk.fi [Nokia Research Center, Itaemerenkatu 9, 00180 Helsinki (Finland)

    2011-02-11

    A novel non-lithographic technique for the fabrication of carbon nanotube thin film transistors is presented. The whole transistor fabrication process requires only one mask which is used both to pattern transistor channels based on aerosol synthesized carbon nanotubes and to deposit electrodes by metal evaporation at different angles. An important effect of electrodynamic focusing was utilized for the directed assembly of transistor channels with feature sizes smaller than the mask openings. This dry non-lithographic method opens up new avenues for device fabrication especially for low cost flexible and transparent electronics.

  7. Electron-induced damage to NPN transistors under different fluxes

    Institute of Scientific and Technical Information of China (English)

    2008-01-01

    Radiation damage of NPN transistors under different fluxes with electron energy of 1.5 MeV was investigated in this article. It has been shown that when NPN transistors were irradiated to a given fluence at different electron fluxes, the shift of base current was dependent on flux. With electron flux decreasing, the shift of base current becomes larger, while collector current almost keeps constant. Thus, more degradation of NPN transistors could be caused by low-electron-flux irradiation, similar to enhanced low-dose-rate sensitivity (ELDRS) of transistors under 60Co γ-irradiation. Finally, the underlying mechanisms were discussed here.

  8. Monolithic Lumped Element Integrated Circuit (M2LEIC) Transistors.

    Science.gov (United States)

    INTEGRATED CIRCUITS, *MONOLITHIC STRUCTURES(ELECTRONICS), *TRANSISTORS, CHIPS(ELECTRONICS), FABRICATION, EPITAXIAL GROWTH, ULTRAHIGH FREQUENCY, POLYSILICONS, PHOTOLITHOGRAPHY, RADIOFREQUENCY POWER, IMPEDANCE MATCHING .

  9. Integral optoelectronic switch based on DMOS-transistors

    Directory of Open Access Journals (Sweden)

    Politanskyy L. F.

    2008-12-01

    Full Text Available The characteristics of optoelectronic couples photodiodes-DMOS-transistor are studied in the paper. There was developed a mathematical model of volt-ampere characteristic of the given optoelectronic couple which allows to determine interrelation of its electric parameters with constructive and electrophysical parameters of photodiodes and DMOS-transistors. There was suggested a construction of integral optoelectronic switch, based on DMOS-transistors on the silicon with dielectric insulation structures (SDIS. Possible is the optic control of executive devices, connected both to the source and drain circuits of the switching transistor.

  10. Two-dimensional materials and their prospects in transistor electronics.

    Science.gov (United States)

    Schwierz, F; Pezoldt, J; Granzner, R

    2015-05-14

    During the past decade, two-dimensional materials have attracted incredible interest from the electronic device community. The first two-dimensional material studied in detail was graphene and, since 2007, it has intensively been explored as a material for electronic devices, in particular, transistors. While graphene transistors are still on the agenda, researchers have extended their work to two-dimensional materials beyond graphene and the number of two-dimensional materials under examination has literally exploded recently. Meanwhile several hundreds of different two-dimensional materials are known, a substantial part of them is considered useful for transistors, and experimental transistors with channels of different two-dimensional materials have been demonstrated. In spite of the rapid progress in the field, the prospects of two-dimensional transistors still remain vague and optimistic opinions face rather reserved assessments. The intention of the present paper is to shed more light on the merits and drawbacks of two-dimensional materials for transistor electronics and to add a few more facets to the ongoing discussion on the prospects of two-dimensional transistors. To this end, we compose a wish list of properties for a good transistor channel material and examine to what extent the two-dimensional materials fulfill the criteria of the list. The state-of-the-art two-dimensional transistors are reviewed and a balanced view of both the pros and cons of these devices is provided.

  11. Design method for a digitally trimmable MOS transistor structure

    DEFF Research Database (Denmark)

    Ning, Feng; Bruun, Erik

    1996-01-01

    , a systematic design method for a digitally trimmable MOS transistor structure is proposed. Using the proposed method, we have designed a digitally trimmable MOS transistor structure and prototype devices were fabricated in a 2.4 micron n-well CMOS technology. Through measurements on these devices, the design...... method has been experimentally confirmed. The trimmable MOS transistor structure has been applied to a high precision current mirror to reduce mismatch in the current mirror. With the trimmable transistor structure, the mismatch can be reduced by more than one order of magnitude....

  12. UNJUK KERJA CATU DAYA 12 VOLT 2A DENGAN PASS ELEMENT TRANSISTOR NPN DAN PNP

    OpenAIRE

    Fathoni Fathoni

    2012-01-01

    Transistor pelewat (pass element transistor) yang dipasang pada rangkain catu daya yang menggunakan IC regulator 3  terminal adalah untuk booster arus output. Ada dua cara pemasangan transistor  pelewat  yang  umum  digunakan,  yaitu  dengan  transistor  pnp  dan  npn.  Transistor  pnp dipasang dengan basis transistor yang terhubung pada input IC regulator sedangkan transistor npn dipasang dengan basis transistor yang terhubung pada output IC regulator. Untuk mengetahui unjuk kerja dari ke...

  13. Outlook and Emerging Semiconducting Materials for Ambipolar Transistors

    NARCIS (Netherlands)

    Bisri, Satria Zulkarnaen; Piliego, Claudia; Gao, Jia; Loi, Maria Antonietta

    2014-01-01

    Ambipolar or bipolar transistors are transistors in which both holes and electrons are mobile inside the conducting channel. This device allows switching among several states: the hole-dominated on-state, the off-state, and the electron-dominated on-state. In the past year, it has attracted great in

  14. Field-effect transistors on tetracene single crystals

    NARCIS (Netherlands)

    De Boer, R.W.I.; Klapwijk, T.M.; Morpurgo, A.F

    2003-01-01

    We report on the fabrication and electrical characterization of field-effect transistors at the surface of tetracene single crystals. We find that the mobility of these transistors reaches the room-temperature value of 0.4 cm2/V s. The nonmonotonous temperature dependence of the mobility, its weak g

  15. On the 50th Anniversary of the Transistor

    DEFF Research Database (Denmark)

    Stassen, Flemming

    1997-01-01

    This paper celebrates the 50th anniversary of the invention of the bipolar transistor in 1947. Combined with the inventions of integration and planar technology, the invention of the transistor marks the beginning of a period of unprecedented growth, the industrialization of electronics....

  16. Very High Frequency Two-Port Characterization of Transistors

    DEFF Research Database (Denmark)

    Hertel, Jens Christian; Nour, Yasser; Jørgensen, Ivan Harald Holger;

    To properly use transistors in VHF converters, they need to be characterized under similar conditions. This research presents a two-port method, using a network analyzer (NWA) with a S-port setup. The method is a one-shot method, providing fast results of the off-state parasitics of the transistors....

  17. Low-Inductance Wiring For Parallel Switching Transistors

    Science.gov (United States)

    Veatch, M. S.; Landis, D. M.

    1990-01-01

    Simple configuration for wiring of multiple parallel-connected switching transistors minimizes stray wiring inductance while providing for use of balancing transformers, which equalize currents in transistors. Currents balanced on twisted pairs of wires. Because twisted pairs carry both "hot-side" and return currents, this configuration has relatively low inductance.

  18. Transistor bonding pad configuration for uniform injection and low inductance

    Science.gov (United States)

    Jacobson, D. S.

    1970-01-01

    Modification of process for fabricating transistors, which comprises a metallization-pattern design for emitter and base areas together with a double bonding configuration for each emitter and base-bonding lead, improves uniformity of carrier injection in transistors and of reducing lead inductances at base-emitter terminals.

  19. The Smallest Transistor-Based Nonautonomous Chaotic Circuit

    DEFF Research Database (Denmark)

    Lindberg, Erik; Murali, K.; Tamasevicius, Arunas

    2005-01-01

    A nonautonomous chaotic circuit based on one transistor, two capacitors, and two resistors is described. The mechanism behind the chaotic performance is based on “disturbance of integration.” The forward part and the reverse part of the bipolar transistor are “fighting” about the charging...

  20. Single-event burnout of epitaxial bipolar transistors

    Energy Technology Data Exchange (ETDEWEB)

    Kuboyama, S.; Sugimoto, K.; Shugyo, S.; Matsuda, S. [National Space Development Agency of Japan, Tsukuba, Ibaraki (Japan); Hirao, T. [Japan Atomic Energy Research Inst., Takasaki, Gunma (Japan)

    1998-12-01

    Single-Event Burnout (SEB) of bipolar junction transistors (BJTs) has been observed nondestructively. It was revealed that all the NPN BJTs, including small signal transistors, with thinner epitaxial layers were inherently susceptible to the SEB phenomenon. It was demonstrated that several design parameters of BJTs were responsible for SEB susceptibility. Additionally, destructive and nondestructive modes of SEB were identified.

  1. Single-event burnout of epitaxial bipolar transistors

    Energy Technology Data Exchange (ETDEWEB)

    Kuboyama, Satoshi; Sugimoto, Kenji; Matsuda, Sumio [National Space Development Agency of Japan, Ysukuba, Ibaraki (Japan); Hirao, Toshio

    1998-10-01

    Single-event burnout (SEB) of bipolar junction transistors (BJTs) has been observed nondestructively. It was revealed that all the NPN BJTs including small signal transistors with thinner epitaxial layer were inherently susceptible to the SEB phenomenon. It was demonstrated that several design parameters of BJTs were responsible for SEB susceptibility. Additionally, destructive and nondestructive modes of SEB were identified. (author)

  2. The Complete Semiconductor Transistor and Its Incomplete Forms

    Institute of Scientific and Technical Information of China (English)

    Jie Binbin; Sah Chih-Tang

    2009-01-01

    This paper describes the definition of the complete transistor. For semiconductor devices, the complete transistor is always bipolar, namely, its electrical characteristics contain both electron and hole currents controlled by their spatial charge distributions. Partially complete or incomplete transistors, via coined names or/and designed physical geometries, included the 1949 Shockley p/n junction transistor (later called Bipolar Junction Transistor,BJT), the 1952 Shockley unipolar 'field-effect' transistor (FET, later called the p/n Junction Gate FET or JGFET), as well as the field-effect transistors introduced by later investigators. Similarities between the surface-channel MOS-gate FET (MOSFET) and the volume-channel BJT are illustrated. The bipolar currents, identified by us in a recent nanometer FET with 2-MOS-gates on thin and nearly pure silicon base, led us to the recognition of the physical makeup and electrical current and charge compositions of a complete transistor and its extension to other three or more terminal signal processing devices, and also the importance of the terminal contacts.

  3. Organic transistors manufactured using inkjet technology with subfemtoliter accuracy.

    Science.gov (United States)

    Sekitani, Tsuyoshi; Noguchi, Yoshiaki; Zschieschang, Ute; Klauk, Hagen; Someya, Takao

    2008-04-01

    A major obstacle to the development of organic transistors for large-area sensor, display, and circuit applications is the fundamental compromise between manufacturing efficiency, transistor performance, and power consumption. In the past, improving the manufacturing efficiency through the use of printing techniques has inevitably resulted in significantly lower performance and increased power consumption, while attempts to improve performance or reduce power have led to higher process temperatures and increased manufacturing cost. Here, we lift this fundamental limitation by demonstrating subfemtoliter inkjet printing to define metal contacts with single-micrometer resolution on the surface of high-mobility organic semiconductors to create high-performance p-channel and n-channel transistors and low-power complementary circuits. The transistors employ an ultrathin low-temperature gate dielectric based on a self-assembled monolayer that allows transistors and circuits on rigid and flexible substrates to operate with very low voltages.

  4. A spiking neuron circuit based on a carbon nanotube transistor.

    Science.gov (United States)

    Chen, C-L; Kim, K; Truong, Q; Shen, A; Li, Z; Chen, Y

    2012-07-11

    A spiking neuron circuit based on a carbon nanotube (CNT) transistor is presented in this paper. The spiking neuron circuit has a crossbar architecture in which the transistor gates are connected to its row electrodes and the transistor sources are connected to its column electrodes. An electrochemical cell is incorporated in the gate of the transistor by sandwiching a hydrogen-doped poly(ethylene glycol)methyl ether (PEG) electrolyte between the CNT channel and the top gate electrode. An input spike applied to the gate triggers a dynamic drift of the hydrogen ions in the PEG electrolyte, resulting in a post-synaptic current (PSC) through the CNT channel. Spikes input into the rows trigger PSCs through multiple CNT transistors, and PSCs cumulate in the columns and integrate into a 'soma' circuit to trigger output spikes based on an integrate-and-fire mechanism. The spiking neuron circuit can potentially emulate biological neuron networks and their intelligent functions.

  5. Self-Consistent Study of Conjugated Aromatic Molecular Transistors

    Science.gov (United States)

    Wang, Jing; Liang, Yun-Ye; Chen, Hao; Wang, Peng; Note, R.; Mizuseki, H.; Kawazoe, Y.

    2010-06-01

    We study the current through conjugated aromatic molecular transistors modulated by a transverse field. The self-consistent calculation is realized with density function theory through the standard quantum chemistry software Gaussian03 and the non-equilibrium Green's function formalism. The calculated I - V curves controlled by the transverse field present the characteristics of different organic molecular transistors, the transverse field effect of which is improved by the substitutions of nitrogen atoms or fluorine atoms. On the other hand, the asymmetry of molecular configurations to the axis connecting two sulfur atoms is in favor of realizing the transverse field modulation. Suitably designed conjugated aromatic molecular transistors possess different I - V characteristics, some of them are similar to those of metal-oxide-semiconductor field-effect transistors (MOSFET). Some of the calculated molecular devices may work as elements in graphene electronics. Our results present the richness and flexibility of molecular transistors, which describe the colorful prospect of next generation devices.

  6. Kondo Effect in a Single Electron Transistor

    Science.gov (United States)

    Goldhaber-Gordon, David

    1998-03-01

    When a field-effect transistor is made very small, and electrons in the channel are separated from those in the leads by tunnel junctions, the transistor turns on and off every time an extra electron is added to the channel. The droplet of electrons confined in the channel of such a single-electron transistor (SET) interacts with electrons in the leads. This is in close analogy to an impurity atom interacting with the delocalized electrons in a metal, the traditional system for studying the Kondo effect.(Y. Meir, N.S. Wingreen, and P.A. Lee. PRL) 70, 2601 (1993) I will discuss measurements on a new generation of SETs that display all the aspects of the Kondo effect:(D. Goldhaber-Gordon, Hadas Shtrikman, D. Mahalu, D. Abusch-Magder, U. Meirav, and M.A. Kastner. To be published in Nature). a spin singlet forms between a localized electron in the channel and delocalized electrons in the leads, causing an enhancement of the zero-bias conductance, when the number of electrons on the artificial atom is odd but not when it is even. The system can be studied out of equilibrium by applying a voltage between the two leads, an impossible procedure in bulk Kondo systems. The spin singlet is altered by applying such a voltage or a magnetic field or by increasing the temperature, all in ways that agree with predictions. In addition, the tunability of an SET allows study of the system over a range of parameters not easily accessible to previous calculations or experiments.

  7. Hysteresis modeling in graphene field effect transistors

    Energy Technology Data Exchange (ETDEWEB)

    Winters, M.; Rorsman, N. [Department of Microtechnology and Nanoscience, Chalmers University of Technology, 412-96 Göteborg (Sweden); Sveinbjörnsson, E. Ö. [Science Institute, University of Iceland, IS-107 Reykjavik (Iceland)

    2015-02-21

    Graphene field effect transistors with an Al{sub 2}O{sub 3} gate dielectric are fabricated on H-intercalated bilayer graphene grown on semi-insulating 4H-SiC by chemical vapour deposition. DC measurements of the gate voltage v{sub g} versus the drain current i{sub d} reveal a severe hysteresis of clockwise orientation. A capacitive model is used to derive the relationship between the applied gate voltage and the Fermi energy. The electron transport equations are then used to calculate the drain current for a given applied gate voltage. The hysteresis in measured data is then modeled via a modified Preisach kernel.

  8. Transistor screening evaluation SJ6708H

    Science.gov (United States)

    Barton, J. L.

    1978-01-01

    A manufacturer was contracted to screen 125 transistors capable of withstanding the high level inductive voltages obtained when switching inductive loads. Planned differences included a change in die bonding to comply with NASA's desire for hard solder die attachment which further necessitated a change in package to conform to the required die mounting system. Evaluation of the electrical performance and recommended changes were made during the preliminary build phase of the program. The following sections are outlined: (1) narrative outline; (2) customer data summary and X-ray reports; (3) device specification; (4) failure analysis reports; (5) test facilities list; and (6) test measurement data.

  9. Carbon Based Transistors and Nanoelectronic Devices

    Science.gov (United States)

    Rouhi, Nima

    Carbon based materials (carbon nanotube and graphene) has been extensively researched during the past decade as one of the promising materials to be used in high performance device technology. In long term it is thought that they may replace digital and/or analog electronic devices, due to their size, near-ballistic transport, and high stability. However, a more realistic point of insertion into market may be the printed nanoelectronic circuits and sensors. These applications include printed circuits for flexible electronics and displays, large-scale bendable electrical contacts, bio-membranes and bio sensors, RFID tags, etc. In order to obtain high performance thin film transistors (as the basic building block of electronic circuits) one should be able to manufacture dense arrays of all semiconducting nanotubes. Besides, graphene synthesize and transfer technology is in its infancy and there is plenty of room to improve the current techniques. To realize the performance of nanotube and graphene films in such systems, we need to economically fabricate large-scale devices based on these materials. Following that the performance control over such devices should also be considered for future design variations for broad range of applications. Here we have first investigated carbon nanotube ink as the base material for our devices. The primary ink used consisted of both metallic and semiconducting nanotubes which resulted in networks suitable for moderate-resistivity electrical connections (such as interconnects) and rfmatching circuits. Next, purified all-semiconducting nanotube ink was used to fabricate waferscale, high performance (high mobility, and high on/off ratio) thin film transistors for printed electronic applications. The parameters affecting device performance were studied in detail to establish a roadmap for the future of purified nanotube ink printed thin film transistors. The trade of between mobility and on/off ratio of such devices was studied and the

  10. Printed shadow masks for organic transistors

    Science.gov (United States)

    Noguchi, Yoshiaki; Sekitani, Tsuyoshi; Someya, Takao

    2007-09-01

    We have manufactured organic field-effect transistors by using shadow masks that are patterned by a screen printing system. The 50-nm-thick pentacene layer is sublimed as a channel in the vacuum system through the shadow mask on the base film with a multilayer patterned by ink-jet. After the deposition of the pentacene layer, the shadow mask is peeled off from the base film without any mechanical damages to the lower structures. The mobility in the saturation regime is 0.4cm2/Vs and the on-off ratio exceeds 105.

  11. Microwave Enhanced Cotunneling in SET Transistors

    DEFF Research Database (Denmark)

    Manscher, Martin; Savolainen, M.; Mygind, Jesper

    2003-01-01

    Cotunneling in single electron tunneling (SET) devices is an error process which may severely limit their electronic and metrologic applications. Here is presented an experimental investigation of the theory for adiabatic enhancement of cotunneling by coherent microwaves. Cotunneling in SET...... transistors has been measured as function of temperature, gate voltage, frequency, and applied microwave power. At low temperatures and applied power levels, including also sequential tunneling, the results can be made consistent with theory using the unknown damping in the microwave line as the only free...

  12. Vertical Nanowire High-Frequency Transistors

    OpenAIRE

    Johansson, Sofia

    2014-01-01

    This thesis explores a novel transistor technology based on vertical InAs nanowires, which could be considered both for low-power high-frequency analog applications and for replacing Si CMOS in the continued scaling of digital electronics. The potential of this device - the vertical InAs nanowire MOSFET – lies in the combination of the outstanding transport properties of InAs and the improved electrostatic control of the gate-all-around geometry. Three generations of the vertical InAs nanowir...

  13. Vertical Nanowire High-Frequency Transistors

    OpenAIRE

    Johansson, Sofia

    2014-01-01

    This thesis explores a novel transistor technology based on vertical InAs nanowires, which could be considered both for low-power high-frequency analog applications and for replacing Si CMOS in the continued scaling of digital electronics. The potential of this device - the vertical InAs nanowire MOSFET – lies in the combination of the outstanding transport properties of InAs and the improved electrostatic control of the gate-all-around geometry. Three generations of the vertical InAs nano...

  14. UNJUK KERJA CATU DAYA 12 VOLT 2A DENGAN PASS ELEMENT TRANSISTOR NPN DAN PNP

    Directory of Open Access Journals (Sweden)

    Fathoni Fathoni

    2012-03-01

    Hasil  pengujian menunjukkan  bahwa catu daya  yang menggunakan  transistor  pelewat  jenis pnp lebih bagus regulasi bebannya dibanding transistor npn, yaitu 0,827 % dibandinng 2,149 %. Saat kondisi hubung singkat, berlaku sebaliknya, yaitu suhu heat sink transistor npn serta IC regulatornya lebih baik dibanding transistor pnp serta IC regulatornya, yaitu 52 °C dan 47 °C   untuk transistor npn dan IC regulatornya dibanding 58°dan 63 °C untuk transistor pnp dan IC regulatornya. Kata kunci: Hubung-singkat, IC regulator, regulasi-beban, transistor-pelewat

  15. Charge Noise in Organic Electrochemical Transistors

    Science.gov (United States)

    Stoop, Ralph L.; Thodkar, Kishan; Sessolo, Michele; Bolink, Henk J.; Schönenberger, Christian; Calame, Michel

    2017-01-01

    Organic electrochemical transistors (OECTs) are increasingly studied as transducers in sensing applications. While much emphasis has been placed on analyzing and maximizing the OECT signal, noise has been mostly ignored, although it determines the resolution of the sensor. The major contribution to the noise in sensing devices is the 1 /f noise, dominant at low frequency. In this work, we demonstrate that the 1 /f noise in OECTs follows a charge-noise model, which reveals that the noise is due to charge fluctuations in proximity or within the bulk of the channel material. We present the noise scaling behavior with gate voltage, channel dimensions, and polymer thickness. Our results suggest the use of large area channels in order to maximize the signal-to-noise ratio (SNR) for biochemical and electrostatic sensing applications. A comparison with the literature shows that the magnitude of the noise in OECTs is similar to that observed in graphene transistors, and only slightly higher than that found in carbon nanotubes and silicon nanowire devices. In a model ion-sensing experiment with OECTs, we estimate crucial parameters such as the characteristic SNR and the corresponding limit of detection.

  16. Carbon nanotubes field effect transistors biosensors

    Directory of Open Access Journals (Sweden)

    M.P. Marco

    2012-03-01

    Full Text Available Carbon nanotube transistor arrays (CNTFETs wereused as biosensors to detect DNA hybridization andto recognize two anabolic steroids, stanozolol (Stzand methylboldenone (MB. Single strand DNA andantibodies specific for STz and MB were immobilizedon the carbon nanotubes (CNTs in situ in the deviceusing two different approaches: direct noncovalentbonding of antibodies to the devices and covalentlytrough a polymer previously attached to theCNTFETs. A new approach to ensure specificadsorption of the biomolecules to the nanotubeswas developed. The polymer poly(methylmethacrylate0.8-co-poly (ethyleneglycolmethacrylate0.8-co-N-succinimidyl methacrylate0.1was synthesized and bonded noncovalently to thenanotube. Aminated single-strand DNA or antibodiesspecific for Stz and MB were then attached covalentlyto the polymer. Statistically significant changes wereobserved in key transistor parameters for both DNAhybridization and steroids recognition. Regardingthe detection mechanism, in addition to chargetransfer, Schottky barrier, SB, modification, andscattering potential reported by other authors, anelectron/hole trapping mechanism leading tohysteresis modification has been determined. Thepresence of polymer seems to hinder the modulationof the electrode-CNT contact.

  17. Advancement in organic nanofiber based transistors

    DEFF Research Database (Denmark)

    Jensen, Per Baunegaard With; Kjelstrup-Hansen, Jakob; Tavares, Luciana;

    The focus of this project is to study the light emission from nanofiber based organic light-emitting transistors (OLETs) with the overall aim of developing efficient, nanoscale light sources with different colors integrated on-chip. The research performed here regards the fabrication and characte......The focus of this project is to study the light emission from nanofiber based organic light-emitting transistors (OLETs) with the overall aim of developing efficient, nanoscale light sources with different colors integrated on-chip. The research performed here regards the fabrication...... and characterization of OLETs using the organic semiconductors para-hexaphenylene (p6P), 5,5´-Di-4-biphenyl-2,2´-bithiophene (PPTTPP) and 5,5'-bis(naphth-2-yl)-2,2'-bithiophene (NaT2). These molecules can self-assemble forming molecular crystalline nanofibers. Organic nanofibers can form the basis for light...... device is obtained by printing two different types of fibers onto the same device2. Improvement of charge injection in these devices and thereby a lower driving voltage amplitude has been obtained by implementing a self-assembled monolayer (SAM)....

  18. Classical Gradual-Channel Modeling of Graphene Field-Effect Transistors (FETs)

    Science.gov (United States)

    2010-08-01

    application of a high-powered many-body analysis of the electronic degrees of freedom, which, in turn, predicts ferromagnetism , superconductivity , charge...metal- oxide semiconductor field-effect transistors (MOSFETs), high electron mobility transistors (HEMTs), metal semiconductor field-effect transistors...V current versus voltage MESFET metal semiconductor field-effect transistor MOSFET metal- oxide semiconductor field-effect transistor RF radio

  19. Sensitivity of MOS transistors to gamma and electron doses

    Energy Technology Data Exchange (ETDEWEB)

    Petr, I. (Ceske Vysoke Uceni Technicke, Prague (Czechoslovakia). Fakulta Jaderna a Fysikalne Inzenyrska); Gilar, O. (Tesla, Premysleni (Czechoslovakia). Vyzkumny Ustav Pristroju Jaderne Techniky)

    1985-03-01

    The threshold shift has been as a function of the properties of the SiO/sub 2/ layer, viz. oxide thickness and diffusion length of the charge carriers formed in the oxide layer. Experimental results obtained from gamma, fast electron, and fast neutron irradiation of MOS transistors having different oxide thickness are given. The theoretical results are compared with the measured data. The sensitivity of MOS transistors to gamma rays and fast electrons is given together with the energy dependence of radiation doses. The application of MOS transistors as dosemeters is discussed.

  20. Organic semiconductors for organic field-effect transistors

    Directory of Open Access Journals (Sweden)

    Yoshiro Yamashita

    2009-01-01

    Full Text Available The advantages of organic field-effect transistors (OFETs, such as low cost, flexibility and large-area fabrication, have recently attracted much attention due to their electronic applications. Practical transistors require high mobility, large on/off ratio, low threshold voltage and high stability. Development of new organic semiconductors is key to achieving these parameters. Recently, organic semiconductors have been synthesized showing comparable mobilities to amorphous-silicon-based FETs. These materials make OFETs more attractive and their applications have been attempted. New organic semiconductors resulting in high-performance FET devices are described here and the relationship between transistor characteristics and chemical structure is discussed.

  1. Single-photon transistor in circuit quantum electrodynamics.

    Science.gov (United States)

    Neumeier, Lukas; Leib, Martin; Hartmann, Michael J

    2013-08-01

    We introduce a circuit quantum electrodynamical setup for a "single-photon" transistor. In our approach photons propagate in two open transmission lines that are coupled via two interacting transmon qubits. The interaction is such that no photons are exchanged between the two transmission lines but a single photon in one line can completely block or enable the propagation of photons in the other line. High on-off ratios can be achieved for feasible experimental parameters. Our approach is inherently scalable as all photon pulses can have the same pulse shape and carrier frequency such that output signals of one transistor can be input signals for a consecutive transistor.

  2. GaN transistors for efficient power conversion

    CERN Document Server

    Lidow, Alex; de Rooij, Michael; Reusch, David

    2014-01-01

    The first edition of GaN Transistors for Efficient Power Conversion was self-published by EPC in 2012, and is currently the only other book to discuss GaN transistor technology and specific applications for the technology. More than 1,200 copies of the first edition have been sold through Amazon or distributed to selected university professors, students and potential customers, and a simplified Chinese translation is also available. The second edition has expanded emphasis on applications for GaN transistors and design considerations. This textbook provides technical and application-focused i

  3. Toward complementary ionic circuits: the npn ion bipolar junction transistor.

    Science.gov (United States)

    Tybrandt, Klas; Gabrielsson, Erik O; Berggren, Magnus

    2011-07-06

    Many biomolecules are charged and may therefore be transported with ionic currents. As a step toward addressable ionic delivery circuits, we report on the development of a npn ion bipolar junction transistor (npn-IBJT) as an active control element of anionic currents in general, and specifically, demonstrate actively modulated delivery of the neurotransmitter glutamic acid. The functional materials of this transistor are ion exchange layers and conjugated polymers. The npn-IBJT shows stable transistor characteristics over extensive time of operation and ion current switch times below 10 s. Our results promise complementary chemical circuits similar to the electronic equivalence, which has proven invaluable in conventional electronic applications.

  4. Controlling charge current through a DNA based molecular transistor

    Science.gov (United States)

    Behnia, S.; Fathizadeh, S.; Ziaei, J.

    2017-01-01

    Molecular electronics is complementary to silicon-based electronics and may induce electronic functions which are difficult to obtain with conventional technology. We have considered a DNA based molecular transistor and study its transport properties. The appropriate DNA sequence as a central chain in molecular transistor and the functional interval for applied voltages is obtained. I-V characteristic diagram shows the rectifier behavior as well as the negative differential resistance phenomenon of DNA transistor. We have observed the nearly periodic behavior in the current flowing through DNA. It is reported that there is a critical gate voltage for each applied bias which above it, the electrical current is always positive.

  5. Organic transistors in optical displays and microelectronic applications.

    Science.gov (United States)

    Gelinck, Gerwin; Heremans, Paul; Nomoto, Kazumasa; Anthopoulos, Thomas D

    2010-09-08

    Organic thin-film transistors (OTFTs) offer unprecedented opportunities for implementation in a broad range of technological applications spanning from large-volume microelectronics and optical displays to chemical and biological sensors. In this Progress Report, we review the application of organic transistors in the fields of flexible optical displays and microelectronics. The advantages associated with the use of OTFT technology are discussed with primary emphasis on the latest developments in the area of active-matrix electrophoretic and organic light-emitting diode displays based on OTFT backplanes and on the application of organic transistors in microelectronics including digital and analog circuits.

  6. Point defects and electric compensation in gallium arsenide single crystals; Punktdefekte und elektrische Kompensation in Galliumarsenid-Einkristallen

    Energy Technology Data Exchange (ETDEWEB)

    Kretzer, Ulrich

    2007-12-10

    In the present thesis the point-defect budget of gallium arsenide single crystals with different dopings is studied. It is shown, in which way the concentration of the single point defects depende on the concentration of the dopants, the stoichiometry deviation, and the position of the Fermi level. For this serve the results of the measurement-technical characterization of a large number of samples, in the fabrication of which these parameters were directedly varied. The main topic of this thesis lies in the development of models, which allow a quantitative description of the experimentally studied electrical and optical properties of gallium arsenide single crystals starting from the point-defect concentrations. Because from point defects charge carriers can be set free, their concentration determines essentially the charge-carrier concentration in the bands. In the ionized state point defects act as scattering centers for free charge carriers and influence by this the drift mobility of the charge carriers. A thermodynamic modeling of the point-defect formation yields statements on the equilibrium concentrations of the point defects in dependence on dopant concentration and stoichiometry deviation. It is show that the electrical properties of the crystals observed at room temperature result from the kinetic suppression of processes, via which the adjustment of a thermodynamic equilibrium between the point defects is mediated. [German] In der vorliegenden Arbeit wird der Punktdefekthaushalt von Galliumarsenid-Einkristallen mit unterschiedlichen Dotierungen untersucht. Es wird gezeigt, in welcher Weise die Konzentration der einzelnen Punktdefekte von der Konzentration der Dotierstoffe, der Stoechiometrieabweichung und der Lage des Ferminiveaus abhaengen. Dazu dienen die Ergebnisse der messtechnischen Charakterisierung einer grossen Anzahl von Proben, bei deren Herstellung diese Parameter gezielt variiert wurden. Der Schwerpunkt der Arbeit liegt in der Entwicklung

  7. Single bit full adder design using 8 transistors with novel 3 transistors XNOR gate

    CERN Document Server

    Kumar, Manoj; Pandey, Sujata

    2012-01-01

    In present work a new XNOR gate using three transistors has been presented, which shows power dissipation of 550.7272$\\mu$W in 0.35$\\mu$m technology with supply voltage of 3.3V. Minimum level for high output of 2.05V and maximum level for low output of 0.084V have been obtained. A single bit full adder using eight transistors has been designed using proposed XNOR cell, which shows power dissipation of 581.542$\\mu$W. Minimum level for high output of 1.97V and maximum level for low output of 0.24V is obtained for sum output signal. For carry signal maximum level for low output of 0.32V and minimum level for high output of 3.2V have been achieved. Simulations have been performed by using SPICE based on TSMC 0.35$\\mu$m CMOS technology. Power consumption of proposed XNOR gate and full adder has been compared with earlier reported circuits and proposed circuit's shows better performance in terms of power consumption and transistor count.

  8. Light Emitting Transistors of Organic Single Crystals

    Science.gov (United States)

    Iwasa, Yoshihiro

    2009-03-01

    Organic light emitting transistors (OLETs) are attracting considerable interest as a novel function of organic field effect transistors (OFETs). Besides a smallest integration of light source and current switching devices, OLETs offer a new opportunity in the fundamental research on organic light emitting devices. The OLET device structure allows us to use organic single crystals, in contrast to the organic light emitting diodes (OLEDs), the research of which have been conducted predominantly on polycrystalline or amorphous thin films. In the case of OFETs, use of single crystals have produced a significant amount of benefits in the studies of pursuit for the highest performance limit of FETs, intrinsic transport mechanism in organic semiconductors, and application of the single crystal transistors. The study on OLETs have been made predominantly on polycrystalline films or multicomponent heterojunctions, and single crystal study is still limited to tetracene [1] and rubrene [2], which are materials with relatively high mobility, but with low photoluminescence efficiency. In this paper, we report fabrication of single crystal OLETs of several kinds of highly luminescent molecules, emitting colorful light, ranging from blue to red. Our strategy is single crystallization of monomeric or oligomeric molecules, which are known to have a very high photoluminescence efficiency. Here we report the result on single crystal LETs of rubrene (red), 4,4'-bis(diphenylvinylenyl)-anthracene (green), 1,4-bis(5-phenylthiophene-2-yl)benzene (AC5) (green), and 1,3,6,8-tetraphenylpyrene (TPPy) (blue), all of which displayed ambipolar transport as well as peculiar movement of voltage controlled movement of recombination zone, not only from the surface of the crystal but also from the edges of the crystals, indicting light confinement inside the crystal. Realization of ambipolar OLET with variety of single crystals indicates that the fabrication method is quite versatile to various light

  9. Polycrystalline silicon ion sensitive field effect transistors

    Science.gov (United States)

    Yan, F.; Estrela, P.; Mo, Y.; Migliorato, P.; Maeda, H.; Inoue, S.; Shimoda, T.

    2005-01-01

    We report the operation of polycrystalline silicon ion sensitive field effect transistors. These devices can be fabricated on inexpensive disposable substrates such as glass or plastics and are, therefore, promising candidates for low cost single-use intelligent multisensors. In this work we have developed an extended gate structure with a Si3N4 sensing layer. Nearly ideal pH sensitivity (54mV /pH) and stable operation have been achieved. Temperature effects have been characterized. A penicillin sensor has been fabricated by functionalizing the sensing area with penicillinase. The sensitivity to penicillin G is about 10mV/mM, in solutions with concentration lower than the saturation value, which is about 7 mM.

  10. Dynamic properties of power MOS transistors

    Science.gov (United States)

    Belabadia, Mohammed

    Power MOSFET's were modeled in dynamic high frequency and switching regimes, based on a theoretical analysis of the active region, taking into account the short channel effects and those related to structural configuration elements. The theoretical synthesis of intrinsic and parasitic elements leads to a complete nonlinear physical model compatible with electric simulators. The model is used for simulation and computer aided design of electric circuits which use power MOSFET's such as RF amplifiers, and frequency doublers. For the switching regime, a hierarchy of models for power V.DMOS transistors is developed. Two compact models consistent with SPICE-2 program and well suited for study and characterization of power V.DMOSFET, in switching condition under resistive and inductive loads, are proposed. They can describe low, medium, and high voltage structures.

  11. Transistor Level Implementation of Digital Reversible Circuits

    Directory of Open Access Journals (Sweden)

    K.Prudhvi Raj

    2015-12-01

    Full Text Available Now a days each and every electronic gadget is desi gning smartly and provides number of applications, so these designs dissipate high amount of power. Rever sible logic is becoming one of the best emerging de sign technologies having its applications in low power C MOS, Quantum computing and Nanotechnology. Reversible logic plays an important role in the des ign of energy efficient circuits. Adders and subtra ctors are the essential blocks of the computing systems. In this paper, reversible gates and circuits are de signed and implemented in CMOS and pass transistor logic u sing Mentor graphics backend tools. A four-bit ripp le carry adder/subtractor and an eight-bit reversible Carry Skip Adder are implemented and compared with the conventional circuits

  12. Chemically modified field effect transistors with nitrite or fluoride selectivity

    NARCIS (Netherlands)

    Antonisse, Martijn M.G.; Snellink-Ruël, Bianca H.M.; Engbersen, Johan F.J.; Reinhoudt, David N.

    1998-01-01

    Polysiloxanes with different types of polar substituents are excellent membrane materials for nitrite and fluoride selective chemically modified field effect transistors (CHEMFETs). Nitrite selectivity has been introduced by incorporation of a cobalt porphyrin into the membrane; fluoride selectivity

  13. Focused Ion Beam Induced Effects on MOS Transistor Parameters

    Energy Technology Data Exchange (ETDEWEB)

    Abramo, Marsha T.; Antoniou, Nicholas; Campbell, Ann N.; Fleetwood, Daniel M.; Hembree, Charles E.; Jessing, Jeffrey R.; Soden, Jerry M.; Swanson, Scot E.; Tangyunyong, Paiboon; Vanderlinde, William E.

    1999-07-28

    We report on recent studies of the effects of 50 keV focused ion beam (FIB) exposure on MOS transistors. We demonstrate that the changes in value of transistor parameters (such as threshold voltage, V{sub t}) are essentially the same for exposure to a Ga+ ion beam at 30 and 50 keV under the same exposure conditions. We characterize the effects of FIB exposure on test transistors fabricated in both 0.5 {micro}m and 0.225 {micro}m technologies from two different vendors. We report on the effectiveness of overlying metal layers in screening MOS transistors from FIB-induced damage and examine the importance of ion dose rate and the physical dimensions of the exposed area.

  14. Microwave field-efffect transistors theory, design, and application

    CERN Document Server

    Pengelly, Raymond

    1994-01-01

    This book covers the use of devices in microwave circuits and includes such topics as semiconductor theory and transistor performance, CAD considerations, intermodulation, noise figure, signal handling, S-parameter mapping, narrow- and broadband techniques, packaging and thermal considerations.

  15. Development and fabrication of improved power transistor switches

    Science.gov (United States)

    Hower, P. L.; Chu, C. K.

    1979-01-01

    A new class of high-voltage power transistors was achieved by adapting present interdigitated thyristor processing techniques to the fabrication of npn Si transistors. Present devices are 2.3 cm in diameter and have V sub CEO (sus) in the range of 400 to 600V. V sub CEO (sus) = 450V devices were made with an (h sub FE)(I sub C) product of 900A at V sub CE = 2.5V. The electrical performance obtained was consistent with the predictions of an optimum design theory specifically developed for power switching transistors. The device design, wafer processing, and assembly techniques are described. Experimental measurements of the dc characteristics, forward SOA, and switching times are included. A new method of characterizing the switching performance of power transistors is proposed.

  16. A nanoscale piezoelectric transformer for low-voltage transistors.

    Science.gov (United States)

    Agarwal, Sapan; Yablonovitch, Eli

    2014-11-12

    A novel piezoelectric voltage transformer for low-voltage transistors is proposed. Placing a piezoelectric transformer on the gate of a field-effect transistor results in the piezoelectric transformer field-effect transistor that can switch at significantly lower voltages than a conventional transistor. The piezoelectric transformer operates by using one piezoelectric to squeeze another piezoelectric to generate a higher output voltage than the input voltage. Multiple piezoelectrics can be used to squeeze a single piezoelectric layer to generate an even higher voltage amplification. Coupled electrical and mechanical modeling in COMSOL predicts a 12.5× voltage amplification for a six-layer piezoelectric transformer. This would lead to more than a 150× reduction in the power needed for communications.

  17. Bounding the total-dose response of modern bipolar transistors

    Energy Technology Data Exchange (ETDEWEB)

    Kosier, S.L.; Wei, A.; Schrimpf, R.D. [Arizona Univ., Tucson, AZ (United States). Dept. of Electrical and Computer Engineering; Combs, W.E. [Naval Surface Warfare Center-Crane, Crane, IN (United States); Fleetwood, D.M. [Sandia National Labs., Albuquerque, NM (United States); DeLaus, M. [Analog Devices, Inc., Wilmington, MA (United States); Pease, R.L. [RLP Research, Albuquerque, NM (United States)

    1994-03-01

    The base current in modern bipolar transistors saturates at large total doses once a critical oxide charge is reached. The saturated value of base current is dose-rate independent. Testing implications are discussed.

  18. Precursor Parameter Identification for Insulated Gate Bipolar Transistor (IGBT) Prognostics

    Data.gov (United States)

    National Aeronautics and Space Administration — Precursor parameters have been identified to enable development of a prognostic approach for insulated gate bipolar transistors (IGBT). The IGBT were subjected to...

  19. Nanoscale chemical sensor based on organic thin-film transistors

    Science.gov (United States)

    Wang, Liang; Fine, Daniel; Dodabalapur, Ananth

    2004-12-01

    Nanoscale organic thin-film transistors were fabricated to investigate their chemical sensing properties. The use of a four-terminal geometry ensures that the sensor active area is truly nanoscale, and eliminates undesirable spreading currents. The sensor response was markedly different in nanoscale sensors compared to large-area sensors for the same analyte-semiconductor combination. The chemical sensing mechanisms in both microscale and nanoscale transistors are briefly discussed.

  20. Progresses in organic field-effect transistors and molecular electronics

    Institute of Scientific and Technical Information of China (English)

    Wu Weiping; Xu Wei; Hu Wenping; Liu Yunqi; Zhu Daoben

    2006-01-01

    In the past years,organic semiconductors have been extensively investigated as electronic materials for organic field-effect transistors (OFETs).In this review,we briefly summarize the current status of organic field-effect transistors including materials design,device physics,molecular electronics and the applications of carbon nanotubes in molecular electronics.Future prospects and investigations required to improve the OFET performance are also involved.

  1. Toward Complementary Ionic Circuits: The npn Ion Bipolar Junction Transistor

    OpenAIRE

    Tybrandt, Klas; Gabrielsson, Erik; Berggren, Magnus

    2011-01-01

    Many biomolecules are charged and may therefore be transported with ionic currents. As a step toward addressable ionic delivery circuits, we report on the development of a npn ion bipolar junction transistor (npn-IBJT) as an active control element of anionic currents in general, and specifically, demonstrate actively modulated delivery of the neurotransmitter glutamic acid. The functional materials of this transistor are ion exchange layers and conjugated polymers. The npn-IBJT shows stable t...

  2. COULOMB BLOCKADE OSCILLATIONS OF Si SINGLE-ELECTRON TRANSISTORS

    Institute of Scientific and Technical Information of China (English)

    王太宏; 李宏伟; 周均铭

    2001-01-01

    Coulomb blockade oscillations of Si single-electron transistors, which are fabricated completely by the conventional photolithography technique, have been investigated. Most of the single-electron transistors clearly show Coulomb blockade oscillations and these oscillations can be periodic by applying negative voltages to the in-plane gates. A shift of the peak positions is observed at high temperatures. It is also found that the fluctuation of the peak spacing cannot be neglected.

  3. Capacitance Variation of Electrolyte-Gated Bilayer Graphene Based Transistors

    OpenAIRE

    Hediyeh Karimi; Rubiyah Yusof; Mohammad Taghi Ahmadi; Mehdi Saeidmanesh; Meisam Rahmani; Elnaz Akbari; Wong King Kiat

    2013-01-01

    Quantum capacitance of electrolyte-gated bilayer graphene field-effect transistors is investigated in this paper. Bilayer graphene has received huge attention due to the fact that an energy gap could be opened by chemical doping or by applying external perpendicular electric field. So, this extraordinary property can be exploited to use bilayer graphene as a channel in electrolyte-gated field-effect transistors. The quantum capacitance of bi-layer graphene with an equivalent circuit is presen...

  4. Selfaligned InGaAs/InP heterostructure bipolar transistors

    Science.gov (United States)

    Feygenson, A.; Temkin, H.; Tsang, W. T.; Yang, L.; Yadvish, R. D.

    1991-06-01

    InGaAs/InP heterostructure bipolar transistors have been realized using a new self-aligned process. Transistor wafers were grown by chemical beam epitaxy. Ideality factors close to unity were measured for emitter-base and collector-base diodes. The resulting devices exhibit nearly constant gain over four orders of magnitude of collector current densities, from j = 0.00015 to 1.5 A/sq cm.

  5. Non-local exchange correlation functionals impact on the structural, electronic and optical properties of III-V arsenides

    KAUST Repository

    Anua, N. Najwa

    2013-08-20

    Exchange correlation (XC) energy functionals play a vital role in the efficiency of density functional theory (DFT) calculations, more soundly in the calculation of fundamental electronic energy bandgap. In the present DFT study of III-arsenides, we investigate the implications of XC-energy functional and corresponding potential on the structural, electronic and optical properties of XAs (X = B, Al, Ga, In). Firstly we report and discuss the optimized structural lattice parameters and the band gap calculations performed within different non-local XC functionals as implemented in the DFT-packages: WIEN2k, CASTEP and SIESTA. These packages are representative of the available code in ab initio studies. We employed the LDA, GGA-PBE, GGA-WC and mBJ-LDA using WIEN2k. In CASTEP, we employed the hybrid functional, sX-LDA. Furthermore LDA, GGA-PBE and meta-GGA were employed using SIESTA code. Our results point to GGA-WC as a more appropriate approximation for the calculations of structural parameters. However our electronic bandstructure calculations at the level of mBJ-LDA potential show considerable improvements over the other XC functionals, even the sX-LDA hybrid functional. We report also the optical properties within mBJ potential, which show a nice agreement with the experimental measurements in addition to other theoretical results. © 2013 IOP Publishing Ltd.

  6. A novel three-jet microreactor for localized metal-organic chemical vapour deposition of gallium arsenide: design and simulation

    Science.gov (United States)

    Konakov, S. A.; Krzhizhanovskaya, V. V.

    2016-08-01

    We present a novel three-jet microreactor design for localized deposition of gallium arsenide (GaAs) by low-pressure Metal-Organic Chemical Vapour Deposition (MOCVD) for semiconductor devices, microelectronics and solar cells. Our approach is advantageous compared to the standard lithography and etching technology, since it preserves the nanostructure of the deposited material, it is less time-consuming and less expensive. We designed two versions of reactor geometry with a 10-micron central microchannel for precursor supply and with two side jets of a dilutant to control the deposition area. To aid future experiments, we performed computational modeling of a simplified-geometry (twodimensional axisymmetric) microreactor, based on Navier-Stokes equations for a laminar flow of chemically reacting gas mixture of Ga(CH3)3-AsH3-H2. Simulation results show that we can achieve a high-rate deposition (over 0.3 μm/min) on a small area (less than 30 μm diameter). This technology can be used in material production for microelectronics, optoelectronics, photovoltaics, solar cells, etc.

  7. Universal Heat Conduction in the Iron Arsenide Superconductor KFe2As2: Evidence of a d-Wave State

    Energy Technology Data Exchange (ETDEWEB)

    Reid, J.-Ph.; Tanatar, Makariy A.; Juneau-Fecteau, A.; Gordon, R.T.; Rene de Cotret, S.; Doiron-Leyraud, N.; Saito, T.; Fukazawa, H.; Kohori, Y.; Kihou, K.; Lee, C.H.; Iyo, A.; Eisaki, H.; Prozorov, Ruslan; Taillefer, Louis

    2012-08-21

    The thermal conductivity κ of the iron arsenide superconductor KFe2As2 was measured down to 50 mK for a heat current parallel and perpendicular to the tetragonal c axis. A residual linear term at T→0, κ0/T is observed for both current directions, confirming the presence of nodes in the superconducting gap. Our value of κ0/T in the plane is equal to that reported by Dong et al. [ Phys. Rev. Lett. 104 087005 (2010)] for a sample whose residual resistivity ρ0 was 10 times larger. This independence of κ0/T on impurity scattering is the signature of universal heat transport, a property of superconducting states with symmetry-imposed line nodes. This argues against an s-wave state with accidental nodes. It favors instead a d-wave state, an assignment consistent with five additional properties: the magnitude of the critical scattering rate Γc for suppressing Tc to zero; the magnitude of κ0/T, and its dependence on current direction and on magnetic field; the temperature dependence of κ(T).

  8. Gallium arsenide exposure impairs processing of particulate antigen by macrophages: modification of the antigen reverses the functional defect.

    Science.gov (United States)

    Hartmann, Constance B; McCoy, Kathleen L

    2004-06-11

    Gallium arsenide (GaAs), a semiconductor used in the electronics industry, causes systemic immunosuppression in animals. The chemical's impact on macrophages to process the particulate antigen, sheep red blood cells (SRBC), for a T cell response in culture was examined after in vivo exposure of mice. GaAs-exposed splenic macrophages were defective in activating SRBC-primed lymph node T cells that could not be attributed to impaired phagocytosis. Modified forms of SRBC were generated to examine the compromised function of GaAs-exposed macrophages. SRBC were fixed to maintain their particulate nature and subsequently delipidated with detergent. Delipidation of intact SRBC was insufficient to restore normal antigen processing in GaAs-exposed macrophages. However, chemically exposed cells efficiently processed soluble sheep proteins. These findings suggest that the problem may lie in the release of sequestered sheep protein antigens, which then could be effectively cleaved to peptides. Furthermore, opsonization of SRBC with IgG compensated for the macrophage processing defect. The influence of signal transduction and phagocytosis via Fcgamma receptors on improved antigen processing could be dissociated. Immobilized anti-Fcgamma receptor antibody activated macrophages to secrete a chemokine, but did not enhance processing of unmodified SRBC by GaAs-exposed macrophages. Restoration of normal processing of particulate SRBC by chemically exposed macrophages involved phagocytosis through Fcgamma receptors. Hence, initial immune responses may be very sensitive to GaAs exposure, and the chemical's immunosuppression may be averted by opsonized particulate antigens.

  9. A final report for Gallium arsenide P-I-N detectors for high-sensitivity imaging of thermal neutrons

    CERN Document Server

    Vernon, S M

    1999-01-01

    This SBIR Phase I developed neutron detectors made FR-om gallium arsenide (GaAs) p-type/ intrinsic/n-type (P-I-N) diodes grown by metalorganic chemical vapor deposition (MOCVD) onto semi-insulating (S1) bulk GaAs wafers. A layer of isotonically enriched boron-10 evaporated onto the FR-ont surface serves to convert incoming neutrons into lithium ions and a 1.47 MeV alpha particle which creates electron-hole pairs that are detected by the GaAs diode. Various thicknesses of ''intrinsic'' (I) undoped GaAs were tested, as was use of a back-surface field (BSF) formed FR-om a layer of Al sub x Ga sub 1 sub - sub x As. Schottky-barrier diodes formed FR-om the same structures without the p+ GaAs top layer were tested as a comparison. After mesa etching and application of contacts, devices were tested in visible light before application of the boron coating. Internal quantum efficiency (IQE) of the best diode near the GaAs bandedge is over 90%. The lowest dark current measured is 1 x 10 sup - sup 1 sup 2 amps at -1 V o...

  10. Universal heat conduction in the iron arsenide superconductor KFe2As2: evidence of a d-wave state.

    Science.gov (United States)

    Reid, J-Ph; Tanatar, M A; Juneau-Fecteau, A; Gordon, R T; de Cotret, S René; Doiron-Leyraud, N; Saito, T; Fukazawa, H; Kohori, Y; Kihou, K; Lee, C H; Iyo, A; Eisaki, H; Prozorov, R; Taillefer, Louis

    2012-08-24

    The thermal conductivity κ of the iron arsenide superconductor KFe2As2 was measured down to 50 mK for a heat current parallel and perpendicular to the tetragonal c axis. A residual linear term at T→0, κ(0)/T is observed for both current directions, confirming the presence of nodes in the superconducting gap. Our value of κ(0)/T in the plane is equal to that reported by Dong et al. [Phys. Rev. Lett. 104, 087005 (2010)] for a sample whose residual resistivity ρ(0) was 10 times larger. This independence of κ(0)/T on impurity scattering is the signature of universal heat transport, a property of superconducting states with symmetry-imposed line nodes. This argues against an s-wave state with accidental nodes. It favors instead a d-wave state, an assignment consistent with five additional properties: the magnitude of the critical scattering rate Γ(c) for suppressing T(c) to zero; the magnitude of κ(0)/T, and its dependence on current direction and on magnetic field; the temperature dependence of κ(T).

  11. The effect of hydrostatic pressure on the physical properties of magnesium arsenide in cubic and hexagonal phases

    Science.gov (United States)

    Mokhtari, Ali; Sedighi, Matin

    2010-04-01

    Full potential-linearized augmented plane wave (FP-LAPW) method within density functional theory (DFT) was applied to study the structural and electronic properties of the magnesium arsenide in both cubic and hexagonal phases. The exchange-correlation functional was approximated as a generalized gradient functional introduced by Perdew-Burke-Ernzerhof (GGA96) and Engel-Vosko (EV-GGA). The lattice parameters, bulk modulus and its pressure derivative, cohesive energy, band structures and effective mass of electrons and holes (EME and EMH) were obtained and compared to the available experimental and theoretical results. A phase transition was predicted at pressure of about 1.63 GPa from the cubic to the hexagonal phase. The effect of hydrostatic pressure on the behavior of the electronic properties such as band gap, valence bandwidths, anti-symmetry gap (the energy gap between two parts of the valence bands), EME and EMH were investigated using both GGA96 and EV-GGA methods. High applied pressure can decrease (increase) the holes mobility of cubic (hexagonal) phase of this compound.

  12. Development of a unique laboratory standard: Indium gallium arsenide detector for the 500-1700 nm spectral region

    Science.gov (United States)

    1987-01-01

    A planar (5 mm diameter) indium gallium arsenide detector having a high (greater than 50 pct) quantum efficiency from the visible into the infrared spectrum (500 to 1700 nm) was fabricated. Quantum efficiencies as high as 37 pct at 510 nm, 58 pct at 820 nm and 62 pct at 1300 nm and 1550 nm were measured. A planar InP/InGaAs detector structure was also fabricated using vapor phase epitaxy to grow device structures with 0, 0.2, 0.4 and 0.6 micrometer thick InP caps. Quantum efficiency was studied as a function of cap thickness. Conventional detector structures were also used by completely etching off the InP cap after zinc diffusion. Calibrated quantum efficiencies were measured. Best results were obtained with devices whose caps were completely removed by etching. Certain problems still remain with these detectors including non-uniform shunt resistance, reproducibility, contact resistance and narrow band anti-reflection coatings.

  13. Indium arsenide as a material for biological applications: Assessment of surface modifications, toxicity, and biocompatibility

    Science.gov (United States)

    Jewett, Scott A.

    III-V semiconductors such as InAs have recently been employed in a variety of applications where the electronic and optical characteristics of traditional, silicon-based materials are inadequate. InAs has a narrow band gap and very high electron mobility in the near-surface region, which makes it very attractive for high performance transistors, optical applications, and chemical sensing. However, InAs forms an unstable surface oxide layer in ambient conditions, which can corrode over time and leach toxic indium and arsenic components. Current research has gone into making InAs more attractive for biological applications through passivation of the surface by adlayer adsorption. In particular, wet-chemical methods are current routes of exploration due to their simplicity, low cost, and flexibility in the type of passivating molecule. This dissertation focuses on surface modifications of InAs using wet-chemical methods in order to further its use in biological applications. First, the adsorption of collagen binding peptides and mixed peptide/thiol adlayers onto InAs was assessed. X-ray photoelectron spectroscopy (XPS) along with atomic force microscopy (AFM) data suggested that the peptides successfully adsorbed onto InAs, but were only able to block oxide regrowth to a relatively low extent. This low passivation ability is due to the lack of covalent bonds of the peptide to InAs, which are necessary to effectively block oxide regrowth. The addition of a thiol, in the form of mixed peptide/thiol adlayers greatly enhanced passivation of InAs while maintaining peptide presence on the surface. Thiols form tight, covalent bonds with InAs, which prevents oxide regrowth. The presence of the collagen-binding peptide on the surface opens the door to subsequent modification with collagen or polyelectrolyte-based adlayers. Next, the stability and toxicity of modified InAs substrates were determined using inductively coupled plasma mass spectrometry (ICP-MS) and zebrafish

  14. Vertical Ge/Si Core/Shell Nanowire Junctionless Transistor.

    Science.gov (United States)

    Chen, Lin; Cai, Fuxi; Otuonye, Ugo; Lu, Wei D

    2016-01-13

    Vertical junctionless transistors with a gate-all-around (GAA) structure based on Ge/Si core/shell nanowires epitaxially grown and integrated on a ⟨111⟩ Si substrate were fabricated and analyzed. Because of efficient gate coupling in the nanowire-GAA transistor structure and the high density one-dimensional hole gas formed in the Ge nanowire core, excellent P-type transistor behaviors with Ion of 750 μA/μm were obtained at a moderate gate length of 544 nm with minimal short-channel effects. The experimental data can be quantitatively modeled by a GAA junctionless transistor model with few fitting parameters, suggesting the nanowire transistors can be fabricated reliably without introducing additional factors that can degrade device performance. Devices with different gate lengths were readily obtained by tuning the thickness of an etching mask film. Analysis of the histogram of different devices yielded a single dominate peak in device parameter distribution, indicating excellent uniformity and high confidence of single nanowire operation. Using two vertical nanowire junctionless transistors, a PMOS-logic inverter with near rail-to-rail output voltage was demonstrated, and device matching in the logic can be conveniently obtained by controlling the number of nanowires employed in different devices rather than modifying device geometry. These studies show that junctionless transistors based on vertical Ge/Si core/shell nanowires can be fabricated in a controlled fashion with excellent performance and may be used in future hybrid, high-performance circuits where bottom-up grown nanowire devices with different functionalities can be directly integrated with an existing Si platform.

  15. Technology characteristics and concerns arising in the design and fabrication of an entire signal processor using gallium arsenide integrated circuits

    Science.gov (United States)

    Naused, Barbara A.; Samson, Mark L.; Schwab, Daniel J.; Gilbert, Barry K.

    Various GaAs transistor and gate technologies that have been developed since 1980 are analyzed. The characteristics of GaAs logic gates and ICs and the buffered FET logic, Shottky diode FET logic, direct coupled FET logic, and heterojunction integrated injection logic used to implement GaAs gate arrays of LSI complexity are described. The use of digital GaAs in a complex target signal processor, the Advanced Onboard Signal Processor (AOSP), is studied. Data from the testing of GaAs components for the AOSP at the wafer probe, package, and assembled circuit board levels are examined.

  16. Transistor Level Circuit Experiments using Evolvable Hardware

    Science.gov (United States)

    Stoica, A.; Zebulum, R. S.; Keymeulen, D.; Ferguson, M. I.; Daud, Taher; Thakoor, A.

    2005-01-01

    The Jet Propulsion Laboratory (JPL) performs research in fault tolerant, long life, and space survivable electronics for the National Aeronautics and Space Administration (NASA). With that focus, JPL has been involved in Evolvable Hardware (EHW) technology research for the past several years. We have advanced the technology not only by simulation and evolution experiments, but also by designing, fabricating, and evolving a variety of transistor-based analog and digital circuits at the chip level. EHW refers to self-configuration of electronic hardware by evolutionary/genetic search mechanisms, thereby maintaining existing functionality in the presence of degradations due to aging, temperature, and radiation. In addition, EHW has the capability to reconfigure itself for new functionality when required for mission changes or encountered opportunities. Evolution experiments are performed using a genetic algorithm running on a DSP as the reconfiguration mechanism and controlling the evolvable hardware mounted on a self-contained circuit board. Rapid reconfiguration allows convergence to circuit solutions in the order of seconds. The paper illustrates hardware evolution results of electronic circuits and their ability to perform under 230 C temperature as well as radiations of up to 250 kRad.

  17. Advanced insulated gate bipolar transistor gate drive

    Science.gov (United States)

    Short, James Evans; West, Shawn Michael; Fabean, Robert J.

    2009-08-04

    A gate drive for an insulated gate bipolar transistor (IGBT) includes a control and protection module coupled to a collector terminal of the IGBT, an optical communications module coupled to the control and protection module, a power supply module coupled to the control and protection module and an output power stage module with inputs coupled to the power supply module and the control and protection module, and outputs coupled to a gate terminal and an emitter terminal of the IGBT. The optical communications module is configured to send control signals to the control and protection module. The power supply module is configured to distribute inputted power to the control and protection module. The control and protection module outputs on/off, soft turn-off and/or soft turn-on signals to the output power stage module, which, in turn, supplies a current based on the signal(s) from the control and protection module for charging or discharging an input capacitance of the IGBT.

  18. A Vertically Integrated Junctionless Nanowire Transistor.

    Science.gov (United States)

    Lee, Byung-Hyun; Hur, Jae; Kang, Min-Ho; Bang, Tewook; Ahn, Dae-Chul; Lee, Dongil; Kim, Kwang-Hee; Choi, Yang-Kyu

    2016-03-09

    A vertically integrated junctionless field-effect transistor (VJ-FET), which is composed of vertically stacked multiple silicon nanowires (SiNWs) with a gate-all-around (GAA) structure, is demonstrated on a bulk silicon wafer for the first time. The proposed VJ-FET mitigates the issues of variability and fabrication complexity that are encountered in the vertically integrated multi-NW FET (VM-FET) based on an identical structure in which the VM-FET, as recently reported, harnesses a source and drain (S/D) junction for its operation and is thus based on the inversion mode. Variability is alleviated by bulk conduction in a junctionless FET (JL-FET), where current flows through the core of the SiNW, whereas it is not mitigated by surface conduction in an inversion mode FET (IM-FET), where current flows via the surface of the SiNW. The fabrication complexity is reduced by the inherent JL structure of the JL-FET because S/D formation is not required. In contrast, it is very difficult to dope the S/D when it is positioned at each floor of a tall SiNW with greater uniformity and with less damage to the crystalline structure of the SiNW in a VM-FET. Moreover, when the proposed VJ-FET is used as nonvolatile flash memory, the endurance and retention characteristics are improved due to the above-mentioned bulk conduction.

  19. Fast Flexible Transistors with a Nanotrench Structure

    Science.gov (United States)

    Seo, Jung-Hun; Ling, Tao; Gong, Shaoqin; Zhou, Weidong; Ma, Alice L.; Guo, L. Jay; Ma, Zhenqiang

    2016-04-01

    The simplification of fabrication processes that can define very fine patterns for large-area flexible radio-frequency (RF) applications is very desirable because it is generally very challenging to realize submicron scale patterns on flexible substrates. Conventional nanoscale patterning methods, such as e-beam lithography, cannot be easily applied to such applications. On the other hand, recent advances in nanoimprinting lithography (NIL) may enable the fabrication of large-area nanoelectronics, especially flexible RF electronics with finely defined patterns, thereby significantly broadening RF applications. Here we report a generic strategy for fabricating high-performance flexible Si nanomembrane (NM)-based RF thin-film transistors (TFTs), capable of over 100 GHz operation in theory, with NIL patterned deep-submicron-scale channel lengths. A unique 3-dimensional etched-trench-channel configuration was used to allow for TFT fabrication compatible with flexible substrates. Optimal device parameters were obtained through device simulation to understand the underlying device physics and to enhance device controllability. Experimentally, a record-breaking 38 GHz maximum oscillation frequency fmax value has been successfully demonstrated from TFTs with a 2 μm gate length built with flexible Si NM on plastic substrates.

  20. Fast Flexible Transistors with a Nanotrench Structure.

    Science.gov (United States)

    Seo, Jung-Hun; Ling, Tao; Gong, Shaoqin; Zhou, Weidong; Ma, Alice L; Guo, L Jay; Ma, Zhenqiang

    2016-04-20

    The simplification of fabrication processes that can define very fine patterns for large-area flexible radio-frequency (RF) applications is very desirable because it is generally very challenging to realize submicron scale patterns on flexible substrates. Conventional nanoscale patterning methods, such as e-beam lithography, cannot be easily applied to such applications. On the other hand, recent advances in nanoimprinting lithography (NIL) may enable the fabrication of large-area nanoelectronics, especially flexible RF electronics with finely defined patterns, thereby significantly broadening RF applications. Here we report a generic strategy for fabricating high-performance flexible Si nanomembrane (NM)-based RF thin-film transistors (TFTs), capable of over 100 GHz operation in theory, with NIL patterned deep-submicron-scale channel lengths. A unique 3-dimensional etched-trench-channel configuration was used to allow for TFT fabrication compatible with flexible substrates. Optimal device parameters were obtained through device simulation to understand the underlying device physics and to enhance device controllability. Experimentally, a record-breaking 38 GHz maximum oscillation frequency fmax value has been successfully demonstrated from TFTs with a 2 μm gate length built with flexible Si NM on plastic substrates.

  1. Scaling properties of ballistic nano-transistors

    Directory of Open Access Journals (Sweden)

    Wulf Ulrich

    2011-01-01

    Full Text Available Abstract Recently, we have suggested a scale-invariant model for a nano-transistor. In agreement with experiments a close-to-linear thresh-old trace was found in the calculated I D - V D-traces separating the regimes of classically allowed transport and tunneling transport. In this conference contribution, the relevant physical quantities in our model and its range of applicability are discussed in more detail. Extending the temperature range of our studies it is shown that a close-to-linear thresh-old trace results at room temperatures as well. In qualitative agreement with the experiments the I D - V G-traces for small drain voltages show thermally activated transport below the threshold gate voltage. In contrast, at large drain voltages the gate-voltage dependence is weaker. As can be expected in our relatively simple model, the theoretical drain current is larger than the experimental one by a little less than a decade.

  2. Electron irradiation effects on power MOS transistors

    Energy Technology Data Exchange (ETDEWEB)

    Frisina, F.; Tavolo, N. (S.G.S. Thomson Microelectronics, Catania (Italy)); Gombia, E.; Mosca, R. (Consiglio Nazionale delle Ricerche, Parma (Italy). Ist. MASPEC); Chirco, P.; Fuochi, P.G. (Consiglio Nazionale delle Ricerche, Bologna (Italy). Lab. di Fotochimica e Radiazioni d' Alta Energia)

    1990-01-01

    Electron irradiation has been used to enhance the switching speed of the internal diode in high-voltage power MOS structures (BV{sub DSS} > 500 V). By using 12 MeV electron irradiation at room temperature it has been found that the reverse recovery time and the reverse recovery charge of power MOS internal diode can be reduced in a well controlled manner up to 70% and 90% of their initial value respectively increasing the radiation dose from 0 to 15 Mrads. Anyway an undesirable decrease of about 3V has been observed in the gate threshold voltage. This effect has been ascribed to the damage produced in the gate oxide of the device due to the electron irradiation. By annealing the device at temperature >315{sup 0}C it has been possible to restore the threshold voltage without heavily enhancing the carrier lifetime. DLTS measurements have been performed on electron-irradiated devices to identify the recombination centres introduced in the forbidden gap of the silicon. A comparison has been made with gold-diffused devices. The results obtained confirm that electron irradiation is feasible for power MOS transistors. (author).

  3. Variable Temperature High-Frequency Response of Heterostructure Transistors

    Science.gov (United States)

    Laskar, Joy

    1992-01-01

    The development of high performance heterostructure transistors is essential for emerging opto-electronic integrated circuits (OEICs) and monolithic microwave integrated circuits (MMICs). Applications for OEICs and MMICs include the rapidly growing telecommunications and personal communications markets. The key to successful OEIC and MMIC chip sets is the development of high performance, cost-effective technologies. In this work, several different transistor structures are investigated to determine the potential for high speed performance and the physical mechanisms controlling the ultimate device operation. A cryogenic vacuum microwave measurement system has been developed to study the high speed operation of modulation doped field-effect transistors (MODFETs), doped channel metal insulator field-effect transistors (MISFETs), and metal semiconductor field-effect transistors (MESFETs). This study has concluded that the high field velocity and not the low field mobility is what controls high frequency operation of GaAs based field-effect transistors. Both Al_{rm x} Ga_{rm 1-x}As/GaAs and InP/In_{rm y}Ga _{rm 1-y}As heterostructure bipolar transistors (HBTs) have also been studied at reduced lattice temperatures to understand the role of diffusive transport in the Al_{rm x} Ga_{rm 1-x}As/GaAs HBT and nonequilibrium transport in the InP/In _{rm y}Ga_ {rm 1-y}As HBT. It is shown that drift/diffusion formulation must be modified to accurately estimate the base delay time in the conventional Al _{rm x}Ga_ {rm 1-x}As/GaAs HBT. The reduced lattice temperature operation of the InP/In_ {rm y}Ga_{rm 1-y}As HBT demonstrates extreme nonequilibrium transport in the neutral base and collector space charge region with current gain cut-off frequency exceeding 300 GHz, which is the fastest reported transistor to date. Finally, the MODFET has been investigated as a three-terminal negative differential resistance (NDR) transistor. The existence of real space transfer is confirmed by

  4. Comparison between Field Effect Transistors and Bipolar Junction Transistors as Transducers in Electrochemical Sensors

    Science.gov (United States)

    Zafar, Sufi; Lu, Minhua; Jagtiani, Ashish

    2017-01-01

    Field effect transistors (FET) have been widely used as transducers in electrochemical sensors for over 40 years. In this report, a FET transducer is compared with the recently proposed bipolar junction transistor (BJT) transducer. Measurements are performed on two chloride electrochemical sensors that are identical in all details except for the transducer device type. Comparative measurements show that the transducer choice significantly impacts the electrochemical sensor characteristics. Signal to noise ratio is 20 to 2 times greater for the BJT sensor. Sensitivity is also enhanced: BJT sensing signal changes by 10 times per pCl, whereas the FET signal changes by 8 or less times. Also, sensor calibration curves are impacted by the transducer choice. Unlike a FET sensor, the calibration curve of the BJT sensor is independent of applied voltages. Hence, a BJT sensor can make quantitative sensing measurements with minimal calibration requirements, an important characteristic for mobile sensing applications. As a demonstration for mobile applications, these BJT sensors are further investigated by measuring chloride levels in artificial human sweat for potential cystic fibrosis diagnostic use. In summary, the BJT device is demonstrated to be a superior transducer in comparison to a FET in an electrochemical sensor. PMID:28134275

  5. Comparison between Field Effect Transistors and Bipolar Junction Transistors as Transducers in Electrochemical Sensors

    Science.gov (United States)

    Zafar, Sufi; Lu, Minhua; Jagtiani, Ashish

    2017-01-01

    Field effect transistors (FET) have been widely used as transducers in electrochemical sensors for over 40 years. In this report, a FET transducer is compared with the recently proposed bipolar junction transistor (BJT) transducer. Measurements are performed on two chloride electrochemical sensors that are identical in all details except for the transducer device type. Comparative measurements show that the transducer choice significantly impacts the electrochemical sensor characteristics. Signal to noise ratio is 20 to 2 times greater for the BJT sensor. Sensitivity is also enhanced: BJT sensing signal changes by 10 times per pCl, whereas the FET signal changes by 8 or less times. Also, sensor calibration curves are impacted by the transducer choice. Unlike a FET sensor, the calibration curve of the BJT sensor is independent of applied voltages. Hence, a BJT sensor can make quantitative sensing measurements with minimal calibration requirements, an important characteristic for mobile sensing applications. As a demonstration for mobile applications, these BJT sensors are further investigated by measuring chloride levels in artificial human sweat for potential cystic fibrosis diagnostic use. In summary, the BJT device is demonstrated to be a superior transducer in comparison to a FET in an electrochemical sensor.

  6. Ambipolar Organic Tri-Gate Transistor for Low-Power Complementary Electronics

    NARCIS (Netherlands)

    Torricelli, F.; Ghittorelli, M.; Smits, E.C.P.; Roelofs, C.W.S.; Janssen, R.A.J.; Gelinck, G.H.; Kovács-Vajna, Z.M.; Cantatore, E.

    2016-01-01

    Ambipolar transistors typically suffer from large off-current inherently due to ambipolar conduction. Using a tri-gate transistor it is shown that it is possible to electrostatically switch ambipolar polymer transistors from ambipolar to unipolar mode. In unipolar mode, symmetric characteristics wit

  7. Carbon Nanotube Thin Film Transistors for Flat Panel Display Application.

    Science.gov (United States)

    Liang, Xuelei; Xia, Jiye; Dong, Guodong; Tian, Boyuan; Peng, Lianmao

    2016-12-01

    Carbon nanotubes (CNTs) are promising materials for both high performance transistors for high speed computing and thin film transistors for macroelectronics, which can provide more functions at low cost. Among macroelectronics applications, carbon nanotube thin film transistors (CNT-TFT) are expected to be used soon for backplanes in flat panel displays (FPDs) due to their superior performance. In this paper, we review the challenges of CNT-TFT technology for FPD applications. The device performance of state-of-the-art CNT-TFTs are compared with the requirements of TFTs for FPDs. Compatibility of the fabrication processes of CNT-TFTs and current TFT technologies are critically examined. Though CNT-TFT technology is not yet ready for backplane production line of FPDs, the challenges can be overcome by close collaboration between research institutes and FPD manufacturers in the short term.

  8. Vertically aligned carbon nanotube field-effect transistors

    KAUST Repository

    Li, Jingqi

    2012-10-01

    Vertically aligned carbon nanotube field-effect transistors (CNTFETs) have been developed using pure semiconducting carbon nanotubes. The source and drain were vertically stacked, separated by a dielectric, and the carbon nanotubes were placed on the sidewall of the stack to bridge the source and drain. Both the effective gate dielectric and gate electrode were normal to the substrate surface. The channel length is determined by the dielectric thickness between source and drain electrodes, making it easier to fabricate sub-micrometer transistors without using time-consuming electron beam lithography. The transistor area is much smaller than the planar CNTFET due to the vertical arrangement of source and drain and the reduced channel area. © 2012 Elsevier Ltd. All rights reserved.

  9. Swift Heavy Ion Irradiation Effects on NPN rf Power Transistors

    Science.gov (United States)

    Pushpa, N.; Prakash, A. P. Gnana; Gupta, S. K.; Revannasiddaiah, D.

    2011-07-01

    The dc characteristics of NPN rf power transistors were studied systematically before and after irradiation by 50 MeV Li3+ ions, 100 MeV F8+ ions and 140 MeV Si10+ ions in the dose range of 100 krad to 100 Mrad. The transistor parameters such as excess base current (ΔIB = IBpost-IBpre), dc current gain (hFE), and collector-saturation current (ICSat) were determined before and after irradiation. The base current (IB) was found to increase significantly after ion irradiation and this in turn decreases the hFE of the transistors. Further, the output characteristics of the irradiated devices exhibit the decrease in the collector current at the saturation region (ICSat) with increase of ion dose.

  10. Single-ZnO-Nanobelt-Based Single-Electron Transistors

    Science.gov (United States)

    Ji, Xiao-Fan; Xu, Zheng; Cao, Shuo; Qiu, Kang-Sheng; Tang, Jing; Zhang, Xi-Tian; Xu, Xiu-Lai

    2014-06-01

    We fabricate single electron transistors based on a single ZnO nanobelt using standard micro-fabrication techniques. The transport properties of the devices are characterized at room temperature and at low temperature (4.2 K). At room temperature, the source-drain current increases linearly as the bias voltage increases, indicating a good ohmic contact in the transistors. At 4.2 K, a Coulomb blockade regime is observed up to a bias voltage of a few millivolts. With scanning the back gate voltage, Coulomb oscillations can be clearly resolved with a period around 1 V. From the oscillations, the charging energy for the single electron transistor is calculated to be about 10 meV, which suggests that confined quantum dots exist with sizes around 35 nm in diameter. The irregular Coulomb diamonds are observed due to the multi-tunneling junctions between dots in the nanobelt.

  11. Integrated logic circuits using single-atom transistors.

    Science.gov (United States)

    Mol, J A; Verduijn, J; Levine, R D; Remacle, F; Rogge, S

    2011-08-23

    Scaling down the size of computing circuits is about to reach the limitations imposed by the discrete atomic structure of matter. Reducing the power requirements and thereby dissipation of integrated circuits is also essential. New paradigms are needed to sustain the rate of progress that society has become used to. Single-atom transistors, SATs, cascaded in a circuit are proposed as a promising route that is compatible with existing technology. We demonstrate the use of quantum degrees of freedom to perform logic operations in a complementary-metal-oxide-semiconductor device. Each SAT performs multilevel logic by electrically addressing the electronic states of a dopant atom. A single electron transistor decodes the physical multivalued output into the conventional binary output. A robust scalable circuit of two concatenated full adders is reported, where by utilizing charge and quantum degrees of freedom, the functionality of the transistor is pushed far beyond that of a simple switch.

  12. Nanowire transistors physics of devices and materials in one dimension

    CERN Document Server

    Colinge, Jean-Pierre

    2016-01-01

    From quantum mechanical concepts to practical circuit applications, this book presents a self-contained and up-to-date account of the physics and technology of nanowire semiconductor devices. It includes a unified account of the critical ideas central to low-dimensional physics and transistor physics which equips readers with a common framework and language to accelerate scientific and technological developments across the two fields. Detailed descriptions of novel quantum mechanical effects such as quantum current oscillations, the metal-to-semiconductor transition and the transition from classical transistor to single-electron transistor operation are described in detail, in addition to real-world applications in the fields of nanoelectronics, biomedical sensing techniques, and advanced semiconductor research. Including numerous illustrations to help readers understand these phenomena, this is an essential resource for researchers and professional engineers working on semiconductor devices and materials in ...

  13. Variable temperature performance of a fully screen printed transistor switch

    Science.gov (United States)

    Zambou, Serges; Magunje, Batsirai; Rhyme, Setshedi; Walton, Stanley D.; Idowu, M. Florence; Unuigbe, David; Britton, David T.; Härting, Margit

    2016-12-01

    This article reports on the variable temperature performance of a flexible printed transistor which works as a current driven switch. In this work, electronic ink is formulated from nanostructured silicon produced by milling polycrystalline silicon. The study of the silicon active layer shows that its conductivity is based on thermal activation of carriers, and could be used as active layers in active devices. We further report on the transistors switching operation and their electrical performance under variable temperature. The reliability of the transistors at constant current bias was also investigated. Analysis of the electrical transfer characteristics from 340 to 10 K showed that the printed devices' current ON/OFF ratio increases as temperature decreases making it a better switch at lower temperatures. A constant current bias on a terminal for up to six hours shows extraordinary stability in electrical performance of the device.

  14. A single photoelectron transistor for quantum optical communications

    CERN Document Server

    Kosaka, H; Robinson, H D; Bandaru, P; Makita, K; Yablonovitch, E B; Kosaka, Hideo; Rao, Deepak S.; Robinson, Hans D.; Bandaru, Prabhakar; Makita, Kikuo; Yablonovitch, Eli

    2003-01-01

    A single photoelectron can be trapped and its photoelectric charge detected by a source/drain channel in a transistor. Such a transistor photodetector can be useful for flagging the safe arrival of a photon in a quantum repeater. The electron trap can be photo-ionized and repeatedly reset for the arrival of successive individual photons. This single photoelectron transistor (SPT) operating at the lambda = 1.3 mu m tele-communication band, was demonstrated by using a windowed-gate double-quantum-well InGaAs/InAlAs/InP heterostructure that was designed to provide near-zero electron g-factor. The g-factor engineering allows selection rules that would convert a photon's polarization to an electron spin polarization. The safe arrival of the photo-electric charge would trigger the commencement of the teleportation algorithm.

  15. Electrolyte-gated transistors for organic and printed electronics.

    Science.gov (United States)

    Kim, Se Hyun; Hong, Kihyon; Xie, Wei; Lee, Keun Hyung; Zhang, Sipei; Lodge, Timothy P; Frisbie, C Daniel

    2013-04-04

    Here we summarize recent progress in the development of electrolyte-gated transistors (EGTs) for organic and printed electronics. EGTs employ a high capacitance electrolyte as the gate insulator; the high capacitance increases drive current, lowers operating voltages, and enables new transistor architectures. Although the use of electrolytes in electronics is an old concept going back to the early days of the silicon transistor, new printable, fast-response polymer electrolytes are expanding the potential applications of EGTs in flexible, printed digital circuits, rollable displays, and conformal bioelectronic sensors. This report introduces the structure and operation mechanisms of EGTs and reviews key developments in electrolyte materials for use in printed electronics. The bulk of the article is devoted to electrical characterization of EGTs and emerging applications.

  16. SEMICONDUCTOR DEVICES: Humidity sensitive organic field effect transistor

    Science.gov (United States)

    Murtaza, I.; Karimov, Kh S.; Ahmad, Zubair; Qazi, I.; Mahroof-Tahir, M.; Khan, T. A.; Amin, T.

    2010-05-01

    This paper reports the experimental results for the humidity dependent properties of an organic field effect transistor. The organic field effect transistor was fabricated on thoroughly cleaned glass substrate, in which the junction between the metal gate and the organic channel plays the role of gate dielectric. Thin films of organic semiconductor copper phthalocynanine (CuPc) and semitransparent Al were deposited in sequence by vacuum thermal evaporation on the glass substrate with preliminarily deposited Ag source and drain electrodes. The output and transfer characteristics of the fabricated device were performed. The effect of humidity on the drain current, drain current-drain voltage relationship, and threshold voltage was investigated. It was observed that humidity has a strong effect on the characteristics of the organic field effect transistor.

  17. LiCa₃As₂H and Ca₁₄As₆X₇ (X = C, H, N): two new arsenide hydride phases grown from Ca/Li metal flux.

    Science.gov (United States)

    Blankenship, Trevor V; Wang, Xiaoping; Hoffmann, Christina; Latturner, Susan E

    2014-10-06

    The reaction of arsenic with sources of light elements in a Ca/Li melt leads to the formation of two new arsenide hydride phases. The predominant phase Ca14As6X7 (X = C(4-), N(3-), H(-)) exhibits a new tetragonal structure type in the space group P4/mbm (a = 15.749(1) Å, c = 9.1062(9) Å, Z = 4, R1 = 0.0150). The minor phase LiCa3As2H also has a new structure type in the orthorhombic space group Pnma (a = 11.4064(7) Å, b = 4.2702(3) Å, c = 11.8762(8)Å, Z = 4, R1 = 0.0135). Both phases feature hydride and arsenide anions separated by calcium cations. The red color of these compounds indicates they should be charge-balanced. DOS calculations on LiCa3As2H confirm a band gap of 1.4 eV; UV-vis spectroscopy on Ca14As6X7 shows a band gap of 1.6 eV. Single-crystal neutron diffraction studies were necessary to determine the mixed occupancy of carbon, nitrogen, and hydrogen anions on the six light-element sites in Ca14As6X7; these data indicated an overall stoichiometry of Ca14As6C(0.445)N(1.135)H(4.915).

  18. Silicon nanowire field effect transistor for biosensing

    Science.gov (United States)

    Chen, Yu

    Detection and recognition of chemical ions and biological molecules are important in basic science as well as in pharmacology and medicine. Nanotechnology has made it possible to greatly enhance detection sensitivity through the use of nanowires, nanotubes, nanocrystals, nanocantilevers, and quantum dots as sensing platforms. In this work silicon nanowires are used as the conductance channel between the source and drain of a FET (field effect transistor) device and the biomolecular binding on the surface of nanowire modifies the conductance like a change in gate voltage. Due to the high surface-to-volume ratio and unique character of the silicon nanowires, this device has significant advantages in real-time, label-free and highly sensitive detection of a wide range of species, including proteins, nucleic acids and other small molecules. Here we present a biosensor fabricated from CMOS (complementary metal-oxide-semiconductor) compatible top-down methods including electron beam lithography. This method enables scalable manufacturing of multiple sensor arrays with high efficiency. In a systematic study of the device characteristics with different wire widths, we have found the sensitivity of the device increases when wire width decreases. By operating the device in appropriate bias region, the sensitivity of the device can be improved without doping or high temperature annealing. Not only can this device be used to detect the concentration of proteins and metabolites like urea or glucose, but also dynamic information like the dissociation constant can be extracted from the measurement. The device is also used to detect the clinically related cancer antigen CA 15.3 and shows potential application in cancer studies.

  19. Nanophotonic quantum computer based on atomic quantum transistor

    Energy Technology Data Exchange (ETDEWEB)

    Andrianov, S N [Institute of Advanced Research, Academy of Sciences of the Republic of Tatarstan, Kazan (Russian Federation); Moiseev, S A [Kazan E. K. Zavoisky Physical-Technical Institute, Kazan Scientific Center, Russian Academy of Sciences, Kazan (Russian Federation)

    2015-10-31

    We propose a scheme of a quantum computer based on nanophotonic elements: two buses in the form of nanowaveguide resonators, two nanosized units of multiatom multiqubit quantum memory and a set of nanoprocessors in the form of photonic quantum transistors, each containing a pair of nanowaveguide ring resonators coupled via a quantum dot. The operation modes of nanoprocessor photonic quantum transistors are theoretically studied and the execution of main logical operations by means of them is demonstrated. We also discuss the prospects of the proposed nanophotonic quantum computer for operating in high-speed optical fibre networks. (quantum computations)

  20. ELDRS and dose-rate dependence of vertical NPN transistor

    Institute of Scientific and Technical Information of China (English)

    ZHENG Yu-Zhan; LU Wu; REN Di-Yuan; WANG Gai-Li; YU Xue-Feng; GUO Qi

    2009-01-01

    The enhanced low-dose-rate sensitivity (ELDRS) and dose-rate dependence of vertical NPN transistors are investigated in this article.The results show that the vertical NPN transistors exhibit more degradation at low dose rate,and that this degradation is attributed to the increase on base current.The oxide trapped positive charge near the SiO2-Si interface and interface traps at the interface can contribute to the increase on base current and the two-stage hydrogen mechanism associated with space charge effect can well explain the experimental results.

  1. Observation of negative differential transconductance in tunneling emitter bipolar transistors

    Science.gov (United States)

    van Veenhuizen, Marc J.; Locatelli, Nicolas; Moodera, Jagadeesh; Chang, Joonyeon

    2009-08-01

    We report on measurement of negative differential transconductance (NDTC) of iron (Fe)/magnesium-oxide (MgO)/silicon tunneling emitter NPN bipolar transistors. Device simulations reveal that the NDTC is a consequence of an inversion layer at the tunneling-oxide/P-silicon interface for low base voltages. Electrons travel laterally through the inversion layer into the base and give rise to an increase in collector current. The NDTC results from the recombination of those electrons at the interface between emitter and base contact which is dependent on the base voltage. For larger base voltages, the inversion layer disappears marking the onset of normal bipolar transistor behavior.

  2. All diamond self-aligned thin film transistor

    Science.gov (United States)

    Gerbi, Jennifer

    2008-07-01

    A substantially all diamond transistor with an electrically insulating substrate, an electrically conductive diamond layer on the substrate, and a source and a drain contact on the electrically conductive diamond layer. An electrically insulating diamond layer is in contact with the electrically conductive diamond layer, and a gate contact is on the electrically insulating diamond layer. The diamond layers may be homoepitaxial, polycrystalline, nanocrystalline or ultrananocrystalline in various combinations.A method of making a substantially all diamond self-aligned gate transistor is disclosed in which seeding and patterning can be avoided or minimized, if desired.

  3. Charge sensitivity of superconducting single-electron transistor

    Science.gov (United States)

    Korotkov, Alexander N.

    1996-10-01

    It is shown that the noise-limited charge sensitivity of a single-electron transistor using superconductors (of either SISIS- or NISIN-type) operating near the threshold of quasiparticle tunneling, can be considerably higher than that of a similar transistor made of normal metals or semiconductors. The reason is that the superconducting energy gap, in contrast to the Coulomb blockade, is not smeared by the finite temperature. We also discuss the increase of the maximum operation temperature due to superconductivity and the peaklike features on the I-V curve of SISIS structures.

  4. Graphene Transistor as a Probe for Streaming Potential

    OpenAIRE

    A. K. M. Newaz; D.A. Markov; Prasai, D.; Bolotin, K. I.

    2012-01-01

    We explore the dependence of electrical transport in a graphene field effect transistor (GraFET) on the flow of water/sodium chloride electrolyte within the immediate vicinity of that transistor. We find large and reproducible shifts in the charge neutrality point of GraFETs that are dependent on the liquid velocity and the ion concentration. We show that these shifts are consistent with the variation of the local electrochemical potential of the liquid next to graphene that are caused by the...

  5. Copper oxide transistor on copper wire for e-textile

    Science.gov (United States)

    Han, Jin-Woo; Meyyappan, M.

    2011-05-01

    A Cu2O-based field effect transistor was fabricated on Cu wire. Thermal oxidation of Cu forms Cu-Cu2O core-shell structure, where the metal-semiconductor Schottky junction was used as a gate barrier with Pt Ohmic contacts for source and drain. The device was coated with polydimethylsiloxane (PDMS) to protect from contamination and demonstrated as a humidity sensor. The cylindrical structure of the Cu wire and the transistor function enable embedding of simple circuits into textile which can potentially offer smart textile for wearable computing, environmental sensing, and monitoring of human vital signs.

  6. Activation Energy of Polycrystalline Silicon Thin Film Transistor

    Directory of Open Access Journals (Sweden)

    B.P. Tyagi

    2011-01-01

    Full Text Available The activation energy of a poly-Si thin film transistor is observed to be influenced by the grain size, trap state density and the inversion layer thickness. The present study aims to investigate these parameters theoretically so as to explore optimum conditions for the working of a polycrystalline silicon thin film transistor. Our computations have revealed that the activation energy decreases with the increase of gate bias for all values of grain size, trap states density and the inversion layer thickness. These findings are compared with the experimental results.

  7. Enhancement of Transistor-to-Transistor Variability Due to Total Dose Effects in 65-nm MOSFETs

    CERN Document Server

    Gerardin, S; Cornale, D; Ding, L; Mattiazzo, S; Paccagnella, A; Faccio, F; Michelis, S

    2015-01-01

    We studied device-to-device variations as a function of total dose in MOSFETs, using specially designed test structures and procedures aimed at maximizing matching between transistors. Degradation in nMOSFETs is less severe than in pMOSFETs and does not show any clear increase in sample-to-sample variability due to the exposure. At doses smaller than 1 Mrad( SiO2) variability in pMOSFETs is also practically unaffected, whereas at very high doses-in excess of tens of Mrad( SiO2)-variability in the on-current is enhanced in a way not correlated to pre-rad variability. The phenomenon is likely due to the impact of random dopant fluctuations on total ionizing dose effects.

  8. Thermal analytic model of current gain for bipolar junction transistor-bipolar static induction transistor compound device

    Institute of Scientific and Technical Information of China (English)

    Zhang You-Run; Zhang Bo; Li Ze-Hong; Lai Chang-Jin; Li Zhao-Ji

    2009-01-01

    This paper proposes a thermal analytical model of current gain for bipolar junction transistor-bipolar static induction transistor (BJT-BSIT) compound device in the low current operation. It also proposes a best thermal compensating factor to the compound device that indicates the relationship between the thermal variation rate of current gain and device structure. This is important for the design of compound device to be optimized. Finally, the analytical model is found to be in good agreement with numerical simulation and experimental results. The test results demonstrate that thermal variation rate of current gain is below 10% in 25℃C-85℃ and 20% in -55℃-25℃.

  9. Semiconductor data book characteristics of approx. 10,000 transistors, FETs, UJTs, diodes, rectifiers, optical semiconductors, triacs and SCRs

    CERN Document Server

    Ball, A M

    1981-01-01

    Semiconductor Data Book, 11th Edition presents tables for ratings and characteristics of transistors and multiple transistors; silicon field effect transistors; unijunction transistors; low power-, variable-, power rectifier-, silicon reference-, and light emitting diodes; photodetectors; triacs; thyristors; lead identification; and transistor comparable types. The book starts by providing an introduction and explanation of tables and manufacturers' codes and addresses. Professionals requiring such data about semiconductors will find the book useful.

  10. Conducted EMI in Inverters with SiC Transistors

    NARCIS (Netherlands)

    Gong, X.

    2013-01-01

    Conducted EMI in Inverters with SiC Transistors Electromagnetic Interference (EMI) is the main side effect accompanied with the fast voltage and current switching transients in power electronics applications. Compliance of the Electromagnetic Compatibility (EMC) standard is prescribed for any power

  11. Reconfigurable Threshold Logic Element with SET and MOS Transistors

    Institute of Scientific and Technical Information of China (English)

    WEI Rong-Shan; CHEN Jin-Feng; CHEN Shou-Chang; HE Ming-Hua

    2012-01-01

    A novel reconfigurable threshold logic element (TLE) using single-electron transistors (SETs) and metal-oxide semiconductor (MOS) transistors is proposed.The proposed TLE is highly reconfigurable,which can perform all two-variable logic functions directly or indirectly,including OR,NOR,AND,NAND,XOR and XNOR.The reconfiguration of the TLE is realized by simply configuring the input bits without changing the device parameters.The design methodology can also be applied in the design of a multi-variable TLE.The reconfigurable TLE demonstrates good performance at room temperature with a compact structure and ultralow power dissipation.The reconfigurable TLE can be useful in high-density high-performance reconfigurable systems and artificial neural networks.%A novel reconfigurable threshold logic element (TLE) using single-electron transistors (SETs) and metal-oxide-semiconductor (MOS) transistors is proposed. The proposed TLE is highly reconfigurable, which can perform all two-variable logic functions directly or indirectly, including OR, NOR, AND, NAND, XOR and XNOR. The reconfiguration of the TLE is realized by simply configuring the input bits without changing the device parameters. The design methodology can also be applied in the design of a multi-variable TLE. The reconfigurable TLE demonstrates good performance at room temperature with a compact structure and ultralow power dissipation. The reconfigurable TLE can be useful in high-density high-performance reconfigurable systems and artificial neural networks.

  12. Voltage biased Varistor-Transistor Hybrid Devices: Properties and Applications

    Directory of Open Access Journals (Sweden)

    Raghvendra K Pandey

    2015-08-01

    Full Text Available The paper describes the properties and potential applications of a novel hybrid varistor device originating from biased voltage induced modified nonlinear current-voltage (I-V characteristics. Single crystal of an oxide semiconductor in the family of iron-titanates with the chemical formula of Fe2TiO5 (pseudobrookite has been used as substrate for the varistor. The modifications of the varistor characteristics are achieved by superimposition of a bias voltage in the current path of the varistor. These altered I-V characteristics, when analyzed, reveal the existence of embedded transistors coexisting with the varistor. These transistors exhibit mutual conductance, signal amplification and electronic switching which are the defining signatures of a typical transistor. The tuned varistors also acquire the properties of signal amplification and mutual conductance which expand the range of applications for a varistor beyond its traditional use as circuit protector. Both tuned varistors and the embedded transistors have attributes which make them suitable for many applications in electronics including at high temperatures and for radiation dominated environments such as space.

  13. Organic transistors in optical displays and microelectronic applications

    NARCIS (Netherlands)

    Gelinck, G.H.; Heremans, P.; Nomoto, K.; Anthopoulos, T.D.

    2010-01-01

    Organic thin-film transistors (OTFTs) offer unprecedented opportunities for implementation in a broad range of technological applications spanning from large-volume microelectronics and optical displays to chemical and biological sensors. In this Progress Report, we review the application of organic

  14. π-Conjugated Organic Semiconductors for Field-Effect Transistors

    Institute of Scientific and Technical Information of China (English)

    LIU Yun-qi

    2005-01-01

    @@ 1Results and Discussion Organic semiconductors employed as active layers in field-effect transistors (FETs) are of great current interest because such FETs can potentially be fabricated at low cost, over large areas, and on flexible substrates. Such facile fabrication approaches offer a significant advantage over silicon technology in numerous applications.

  15. Electrical interfacing of neurotransmitter receptor and field effect transistor

    Science.gov (United States)

    Peitz, I.; Fromherz, P.

    2009-10-01

    The interfacing of a ligand-gated ion channel to a transistor is studied. It relies on the transduction of ion current to a voltage in a cell-transistor junction. For the first time, a genetically modified cell is used without external driving voltage as applied by a patch-pipette. Using a core-coat conductor model, we show that an autonomous dynamics gives rise to a signal if a driving voltage is provided by potassium channels, and if current compensation is avoided by an inhomogeneous activation of channels. In a proof-of-principle experiment, we transfect HEK293 cells with the serotonin receptor 5-HT3A and the potassium channel Kv1.3. The interfacing is characterized under voltage-clamp with a negative transistor signal for activated 5-HT3A and a positive signal for activated Kv1.3. Without patch-pipette, a biphasic transient is induced by serotonin. The positive wave is assigned to 5-HT3A receptors in the free membrane that drive a potassium outward current through the adherent membrane. The negative wave is attributed to 5-HT3A receptors in the adherent membrane that are activated with a delay due to serotonin diffusion. The implementation of a receptor-cell-transistor device is a fundamental step in the development of biosensors that combine high specificity and universal microelectronic readout.

  16. Early effect of SiGe heterojunction bipolar transistors

    Science.gov (United States)

    Xu, Xiao-Bo; Zhang, He-Ming; Hu, Hui-Yong; Qu, Jiang-Tao

    2012-06-01

    The standard Early voltage of the SGP model is generalized for SiGe NPN heterojunction bipolar transistors (HBTs). A new compact formulation of the Early voltage compatible with the SGP model is presented. The impact of the Ge profile on Early effect is shown and validated by experiments. The model can be applied to the SGP model for circuit simulation.

  17. Conductance switching in organic ferroelectric field-effect transistors

    NARCIS (Netherlands)

    Asadi, K.; Blom, P.W.M.; Leeuw, D.M. de

    2011-01-01

    Staggered bottom-contact top-gate organic ferroelectric field-effect transistors are fabricated with poly(vinylidene fluoride-trifluoroethylene) (P(VDF-TrFE)) as ferroelectric gate and poly[bis(4-phenyl)(2,4,6- trimethylphenyl)amine] as semiconductor. Polarization reversal of the ferroelectric gate

  18. Metal-nanoparticle single-electron transistors fabricated using electromigration

    DEFF Research Database (Denmark)

    Bolotin, K I; Kuemmeth, Ferdinand; Pasupathy, A N;

    2004-01-01

    We have fabricated single-electron transistors from individual metal nanoparticles using a geometry that provides improved coupling between the particle and the gate electrode. This is accomplished by incorporating a nanoparticle into a gap created between two electrodes using electromigration, all...

  19. Current-Induced Transistor Sensorics with Electrogenic Cells.

    Science.gov (United States)

    Fromherz, Peter

    2016-04-25

    The concepts of transistor recording of electroactive cells are considered, when the response is determined by a current-induced voltage in the electrolyte due to cellular activity. The relationship to traditional transistor recording, with an interface-induced response due to interactions with the open gate oxide, is addressed. For the geometry of a cell-substrate junction, the theory of a planar core-coat conductor is described with a one-compartment approximation. The fast electrical relaxation of the junction and the slow change of ion concentrations are pointed out. On that basis, various recording situations are considered and documented by experiments. For voltage-gated ion channels under voltage clamp, the effects of a changing extracellular ion concentration and the enhancement/depletion of ion conductances in the adherent membrane are addressed. Inhomogeneous ion conductances are crucial for transistor recording of neuronal action potentials. For a propagating action potential, the effects of an axon-substrate junction and the surrounding volume conductor are distinguished. Finally, a receptor-transistor-sensor is described, where the inhomogeneity of a ligand-activated ion conductance is achieved by diffusion of the agonist and inactivation of the conductance. Problems with regard to a development of reliable biosensors are mentioned.

  20. Selected Transistor Material for the Information-Seeking Adult.

    Science.gov (United States)

    Ringold, Dorman R.

    This study was undertaken to identify and organize meaningful and useful basic materials on transistor principles and applications, and to explore some of the elements required for adult teaching. It was limited to the apparent needs of information-seeking adults in greater Los Angeles who desired occupational skills. A literature review…

  1. Multiple facets of tightly coupled transducer-transistor structures.

    Science.gov (United States)

    Heidari, Hadi; Dahiya, Ravinder

    2015-12-04

    The ever increasing demand for data processing requires different paradigms for electronics. Excellent performance capabilities such as low power and high speed in electronics can be attained through several factors including using functional materials, which sometimes acquire superior electronic properties. The transduction-based transistor switching mechanism is one such possibility, which exploits the change in electrical properties of the transducer as a function of a mechanically induced deformation. Originally developed for deformation sensors, the technique is now moving to the centre stage of the electronic industry as the basis for new transistor concepts to circumvent the gate voltage bottleneck in transistor miniaturization. In issue 37 of Nanotechnology, Chang et al show the piezoelectronic transistor (PET), which uses a fast, low-power mechanical transduction mechanism to propagate an input gate voltage signal into an output resistance modulation. The findings by Chang et al will spur further research into piezoelectric scaling, and the PET fabrication techniques needed to advance this type of device in the future.

  2. Nanoscaled biological gated field effect transistors for cytogenetic analysis

    DEFF Research Database (Denmark)

    Kwasny, Dorota; Dimaki, Maria; Andersen, Karsten Brandt;

    2014-01-01

    Cytogenetic analysis is the study of chromosome structure and function, and is often used in cancer diagnosis, as many chromosome abnormalities are linked to the onset of cancer. A novel label free detection method for chromosomal translocation analysis using nanoscaled field effect transistors...

  3. Ambipolar all-polymer bulk heterojunction field-effect transistors

    NARCIS (Netherlands)

    Szendrei, Krisztina; Jarzab, Dorota; Chen, Zhihua; Facchetti, Antonio; Loi, Maria A.

    2010-01-01

    We demonstrate solution processable all-polymer based field-effect transistors (FETs) exhibiting comparable electron and hole mobilities. The semiconducting layer is a bulk heterojunction of poly{[N,N'-bis(2-octyldodecyl)-naphthalene-1,4,5,8-bis(dicarboximide)-2,6-diyl]-alt-5,5'-(2,2'-bithiophene)}

  4. Experiments with Charge Indicator Based on Bipolar Transistors

    Science.gov (United States)

    Dvorak, Leos; Planinsic, Gorazd

    2012-01-01

    A simple charge indicator with bipolar transistors described recently enables us to perform a number of experiments suitable for high-school physics. Several such experiments are presented and discussed in this paper as well as some features of the indicator important for its use in schools, namely its sensitivity and robustness, i.e. the…

  5. Temperature dependence of magnetocurrent in a magnetic tunnel transistor

    NARCIS (Netherlands)

    Park, B.G.; Banerjee, T.; Min, B.C.; Sanderink, J.G.M.; Lodder, J.C.; Jansen, R.

    2005-01-01

    The temperature dependence of magnetocurrent (MC) and transfer ratio has been investigated in a magnetic tunnel transistor (MTT) with a ferromagnetic (FM) emitter of Co or Ni80Fe20. MTT devices of sizes ranging from 10 to 100 µm in diameter were fabricated using a standard photolithography process a

  6. Durable chemical sensors based on field-effect transistors

    NARCIS (Netherlands)

    Reinhoudt, D.N.

    1995-01-01

    The design of durable chemical sensors based on field-effect transistors (FETs) is described. After modification of an ion-sensitive FET (ISFET) with a polysiloxane membrane matrix, it is possible to attach all electroactive components covalently. Preliminary results of measurements with a sodium-se

  7. Influence of halo doping profiles on MOS transistor mismatch

    NARCIS (Netherlands)

    Andricciola, P.; Tuinhout, H.

    2009-01-01

    Halo implants are used in modern CMOS technology to reduce the short channel effect. However, the lateral non-uniformity of the channel doping has been proven to degenerate the mismatch performance. With this paper we want to discuss the influence of the halo profile on MOS transistor mismatch. The

  8. Identifying failure mechanisms in LDMOS transistors by analytical stability analysis

    NARCIS (Netherlands)

    Ferrara, A.; Steeneken, P.G.; Boksteen, B.K.; Heringa, A.; Scholten, A.J.; Schmitz, J.; Hueting, R.J.E.

    2014-01-01

    In this work, analytical stability equations are derived and combined with a physics-based model of an LDMOS transistor in order to identify the primary cause of failure in different operating and bias conditions. It is found that there is a gradual boundary between an electrical failure region at h

  9. PH-Sensitive Ni(OH)2-Based Microelectrochemical Transistors.

    Science.gov (United States)

    1986-11-24

    including those based on W0 3 , 13 on platinized poly(3- methylthiophene),2 1 on ferrocyanide-loaded, protonated poly(4- ,V. vinylpyridine),2 2 and on...a viologen /quinone-based polymer.2 3 One important difference between Ni(OH)2 and the other active materials in pH-sensitive transistors is that Ni

  10. Frequency response of electrolyte-gated graphene electrodes and transistors

    Science.gov (United States)

    Drieschner, Simon; Guimerà, Anton; Cortadella, Ramon G.; Viana, Damià; Makrygiannis, Evangelos; Blaschke, Benno M.; Vieten, Josua; Garrido, Jose A.

    2017-03-01

    The interface between graphene and aqueous electrolytes is of high importance for applications of graphene in the field of biosensors and bioelectronics. The graphene/electrolyte interface is governed by the low density of states of graphene that limits the capacitance near the Dirac point in graphene and the sheet resistance. While several reports have focused on studying the capacitance of graphene as a function of the gate voltage, the frequency response of graphene electrodes and electrolyte-gated transistors has not been discussed so far. Here, we report on the impedance characterization of single layer graphene electrodes and transistors, showing that due to the relatively high sheet resistance of graphene, the frequency response is governed by the distribution of resistive and capacitive circuit elements along the graphene/electrolyte interface. Based on an analytical solution for the impedance of the distributed circuit elements, we model the graphene/electrolyte interface both for the electrode and the transistor configurations. Using this model, we can extract the relevant material and device parameters such as the voltage-dependent intrinsic sheet and series resistances as well as the interfacial capacitance. The model also provides information about the frequency threshold of electrolyte-gated graphene transistors, above which the device exhibits a non-resistive response, offering an important insight into the suitable frequency range of operation of electrolyte-gated graphene devices.

  11. Single event burnout sensitivity of embedded field effect transistors

    Energy Technology Data Exchange (ETDEWEB)

    Koga, R.; Crain, S.H.; Crawford, K.B.; Yu, P.; Gordon, M.J.

    1999-12-01

    Observations of single event burnout (SEB) in embedded field effect transistors are reported. Both SEB and other single event effects are presented for several pulse width modulation and high frequency devices. The microscope has been employed to locate and to investigate the damaged areas. A model of the damage mechanism based on the results so obtained is described.

  12. Bipolar Transistors Can Detect Charge in Electrostatic Experiments

    Science.gov (United States)

    Dvorak, L.

    2012-01-01

    A simple charge indicator with bipolar transistors is described that can be used in various electrostatic experiments. Its behaviour enables us to elucidate links between 'static electricity' and electric currents. In addition it allows us to relate the sign of static charges to the sign of the terminals of an ordinary battery. (Contains 7 figures…

  13. Emitter space charge layer transit time in bipolar junction transistors

    Science.gov (United States)

    Rustagi, S. C.; Chattopadhyaya, S. K.

    1981-04-01

    The charge defined emitter space charge layer transit times of double diffused transistors have been calculated using a regional approach, and compared with the corresponding base transit times. The results obtained for emitter space-charge layer transit times have been discussed with reference to the capacitance analysis of Morgan and Smit (1960) for graded p-n junctions.

  14. Effects of overheating in a single-electron transistor

    DEFF Research Database (Denmark)

    Korotkov, A. N.; Samuelsen, Mogens Rugholm; Vasenko, S. A.

    1994-01-01

    Heating of a single-electron transistor (SET) caused by the current flowing through it is considered. The current and the temperature increase should be calculated self-consistently taking into account various paths of the heat drain. Even if there is no heat drain from the central electrode of t...... threshold. Journal of Applied Physics is copyrighted by The American Institute of Physics....

  15. Reference field effect transistor based on chemically modified ISFETs

    NARCIS (Netherlands)

    Skowronska-Ptasinska, Maria; Wal, van der Peter D.; Berg, van den Albert; Bergveld, Piet; Sudhölter, Ernst J.R.; Reinhoudt, David N.

    1990-01-01

    Different hydrophobic polymers were used for chemical modification of ion-sensitive field effect transistors (ISFETs) in order to prepare a reference FET (REFET). Chemical attachment of the polymer to the ISFET gate results in a long lifetime of the device. Properties of polyacrylate (polyACE) REFET

  16. Field-Induced Superconductivity in Electric Double Layer Transistors

    NARCIS (Netherlands)

    Ueno, Kazunori; Shimotani, Hidekazu; Yuan, Hongtao; Ye, Jianting; Kawasaki, Masashi; Iwasa, Yoshihiro

    2014-01-01

    Electric field tuning of superconductivity has been a long-standing issue in solid state physics since the invention of the field-effect transistor (FET) in 1960. Owing to limited available carrier density in conventional FET devices, electric-field-induced superconductivity was believed to be possi

  17. Analysis and Design of a Gated Envelope Feedback Technique for Automatic Hardware Reconfiguration of RFIC Power Amplifiers, with Full On-Chip Implementation in Gallium Arsenide Heterojunction Bipolar Transistor Technology

    Science.gov (United States)

    Constantin, Nicolas Gerard David

    In this doctoral dissertation, the author presents the theoretical foundation, the analysis and design of analog and RF circuits, the chip level implementation, and the experimental validation pertaining to a new radio frequency integrated circuit (RFIC) power amplifier (PA) architecture that is intended for wireless portable transceivers. A method called Gated Envelope Feedback is proposed to allow the automatic hardware reconfiguration of a stand-alone RFIC PA in multiple states for power efficiency improvement purposes. The method uses self-operating and fully integrated circuitry comprising RF power detection, switching and sequential logic, and RF envelope feedback in conjunction with a hardware gating function for triggering and activating current reduction mechanisms as a function of the transmitted RF power level. Because of the critical role that RFIC PA components occupy in modern wireless transceivers, and given the major impact that these components have on the overall RF performances and energy consumption in wireless transceivers, very significant benefits stem from the underlying innovations. The method has been validated through the successful design of a 1.88GHz COMA RFIC PA with automatic hardware reconfiguration capability, using an industry renowned state-of-the-art GaAs HBT semiconductor process developed and owned by Skyworks Solutions, Inc., USA. The circuit techniques that have enabled the successful and full on-chip embodiment of the technique are analyzed in details. The IC implementation is discussed, and experimental results showing significant current reduction upon automatic hardware reconfiguration, gain regulation performances, and compliance with the stringent linearity requirements for COMA transmission demonstrate that the gated envelope feedback method is a viable and promising approach to automatic hardware reconfiguration of RFIC PA's for current reduction purposes. Moreover, in regard to on-chip integration of advanced PA control functions, it is demonstrated that the method is better positioning GaAs HBT technologies, which are known to offer very competitive RF performances but inherently have limited integration capabilities. Finally, an analytical approach for the evaluation of inter-modulation distortion (IMD) in envelope feedback architectures is introduced, and the proposed design equations and methodology for IMD analysis may prove very helpful for theoretical analyses, for simulation tasks, and for experimental work.

  18. Superconductivity in Ti-doped iron-arsenide compound Sr4Cr0.8Ti1.2O6Fe2As2

    Institute of Scientific and Technical Information of China (English)

    2009-01-01

    Superconductivity was achieved in Ti-doped iron-arsenide compound Sr4Cr0.8Ti1.2O6Fe2As2 (abbreviated as Cr-FeAs-42622). The X-ray diffraction measurement shows that this material has a layered structure with the space group of P4/nmm,and with the lattice constants a = b = 3.9003  and c = 15.8376 . Clear diamagnetic signals in ac susceptibility data and zero-resistance in resistivity data were detected at about 6 K,confirming the occurrence of bulk superconductivity. Meanwhile we observed a supercon-ducting transition in the resistive data with the onset transition temperature at 29.2 K,which may be induced by the nonuniform distribution of the Cr/Ti content in the FeAs-42622 phase.

  19. An Investigation of Impact of Transistor Gate’s Thickness of Floating Gate Transistor in Improvement of Sensitivity of Low-Power Gamma-Ray Dosimeters

    Directory of Open Access Journals (Sweden)

    Armin Afshari Moghaddam

    2016-03-01

    Full Text Available Gamma-ray dosimeter is an instrument which measures dose amount attracted by gamma ray. This integrated sensor is utilized for high irradiation and low sensitivity applications such as blood sterilization. In this article, a gamma-ray MOSFET dosimeter including a floating-gate MOSFET transistor as a sensor and a gate connection reference transistor with identical geometry are simulated using the TSMC 0.13-micron process technology. Floating-gate transistor is used in low-power circuits. The dosimeter applied herein makes use of general dose measurement methodology. Source of gamma ray is cobalt-60. Here, the impact of transistor gate’s thickness of floating transistor served as a sensor on sensitivity of dosimeter is examined. To do so, dosimeter was simulated using the software HSPICE, and impact of different thicknesses of floating transistors on sensitivity was examined. Finally, it was concluded that an increase in transistor gate’s thickness of floating transistor would bring about an improvement of at least 25 percent in sensitivity.

  20. Enhanced Amplification and Fan-Out Operation in an All-Magnetic Transistor.

    Science.gov (United States)

    Barman, Saswati; Saha, Susmita; Mondal, Sucheta; Kumar, Dheeraj; Barman, Anjan

    2016-09-14

    Development of all-magnetic transistor with favorable properties is an important step towards a new paradigm of all-magnetic computation. Recently, we showed such possibility in a Magnetic Vortex Transistor (MVT). Here, we demonstrate enhanced amplification in MVT achieved by introducing geometrical asymmetry in a three vortex sequence. The resulting asymmetry in core to core distance in the three vortex sequence led to enhanced amplification of the MVT output. A cascade of antivortices travelling in different trajectories including a nearly elliptical trajectory through the dynamic stray field is found to be responsible for this amplification. This asymmetric vortex transistor is further used for a successful fan-out operation, which gives large and nearly equal gains in two output branches. This large amplification in magnetic vortex gyration in magnetic vortex transistor is proposed to be maintained for a network of vortex transistor. The above observations promote the magnetic vortex transistors to be used in complex circuits and logic operations.

  1. Indium Arsenide Nanowires

    DEFF Research Database (Denmark)

    Madsen, Morten Hannibal

    -ray diffraction is performed with a MBE system attached to a synchrotron beam line. The evolution in crystal structure is monitored for different growth conditions and can be correlated to post growth analysis in TEM. This type of studies gives much more detailed information on formation of the crystal structure......This thesis is about growth of Au-assisted and self-assisted InAs nanowires (NWs). The wires are synthesized using a solid source molecular beam epitaxy (MBE) system and characterized with several techniques including scanning electron microscopy (SEM), transmission electron microscopy (TEM) and x...... by a systematic study to optimize the growth conditions; first the Au deposition, then the growth temperature and finally the beam fluxes. For further control of the growth, Au droplets have been positioned with electron beam lithography and large scale arrays with a > 99 % yield have been made on 2 inch...

  2. Ambipolar Organic Tri-Gate Transistor for Low-Power Complementary Electronics.

    Science.gov (United States)

    Torricelli, Fabrizio; Ghittorelli, Matteo; Smits, Edsger C P; Roelofs, Christian W S; Janssen, René A J; Gelinck, Gerwin H; Kovács-Vajna, Zsolt M; Cantatore, Eugenio

    2016-01-13

    Ambipolar transistors typically suffer from large off-current inherently due to ambipolar conduction. Using a tri-gate transistor it is shown that it is possible to electrostatically switch ambipolar polymer transistors from ambipolar to unipolar mode. In unipolar mode, symmetric characteristics with an on/off current ratio of larger than 10(5) are obtained. This enables easy integration into low-power complementary logic and volatile electronic memories.

  3. Optimisation of trench isolated bipolar transistors on SOI substrates by 3D electro-thermal simulations

    Science.gov (United States)

    Nigrin, S.; Armstrong, G. A.; Kranti, A.

    2007-09-01

    This paper provides a comprehensive analysis of thermal resistance of trench isolated bipolar transistors on SOI substrates based on 3D electro-thermal simulations calibrated to experimental data. The impact of emitter length, width, spacing and number of emitter fingers on thermal resistance is analysed in detail. The results are used to design and optimise transistors with minimum thermal resistance and minimum transistor area.

  4. Thermal Simulation of Switching Pulses in an Insulated Gate Bipolar Transistor (IGBT) Power Module

    Science.gov (United States)

    2015-02-01

    Thermal Simulation of Switching Pulses in an Insulated Gate Bipolar Transistor (IGBT) Power Module by Gregory K Ovrebo ARL-TR-7210...ARL-TR-7210 February 2015 Thermal Simulation of Switching Pulses in an Insulated Gate Bipolar Transistor (IGBT) Power Module Gregory K... Bipolar Transistor (IGBT) Power Module 5a. CONTRACT NUMBER 5b. GRANT NUMBER 5c. PROGRAM ELEMENT NUMBER 6. AUTHOR(S) Gregory K Ovrebo 5d

  5. Low-frequency noise in single electron tunneling transistor

    DEFF Research Database (Denmark)

    Tavkhelidze, A.N.; Mygind, Jesper

    1998-01-01

    photons emitted by the 4.2 K environment from reaching the sample, allows us to study a given background charge configuration for many hours below [approximate] 100 mK. The noise at relatively high frequencies originates from internal (presumably thermal equilibrium) charge fluctuations. For f >= 10 Hz......The noise in current biased aluminium single electron tunneling (SET) transistors has been investigated in the frequency range of 5 mHz ..., we find the same input charge noise, typically QN = 5 × 10–4 e/Hz1/2 at 10 Hz, with and without the HF shielding. At lower frequencies, the noise is due to charge trapping, and the voltage noise pattern superimposed on the V(Vg) curve (voltage across transistor versus gate voltage) strongly depends...

  6. Thin film transistors for flexible electronics: Contacts, dielectrics and semiconductors

    KAUST Repository

    Quevedo-López, Manuel Angel Quevedo

    2011-06-01

    The development of low temperature, thin film transistor processes that have enabled flexible displays also present opportunities for flexible electronics and flexible integrated systems. Of particular interest are possible applications in flexible sensor systems for unattended ground sensors, smart medical bandages, electronic ID tags for geo-location, conformal antennas, radiation detectors, etc. In this paper, we review the impact of gate dielectrics, contacts and semiconductor materials on thin film transistors for flexible electronics applications. We present our recent results to fully integrate hybrid complementary metal oxide semiconductors comprising inorganic and organic-based materials. In particular, we demonstrate novel gate dielectric stacks and semiconducting materials. The impact of source and drain contacts on device performance is also discussed. Copyright © 2011 American Scientific Publishers.

  7. All 2D, high mobility, flexible, transparent thin film transistor

    Energy Technology Data Exchange (ETDEWEB)

    Das, Saptarshi; Sumant, Anirudha V.; Roelofs, Andreas

    2017-01-17

    A two-dimensional thin film transistor and a method for manufacturing a two-dimensional thin film transistor includes layering a semiconducting channel material on a substrate, providing a first electrode material on top of the semiconducting channel material, patterning a source metal electrode and a drain metal electrode at opposite ends of the semiconducting channel material from the first electrode material, opening a window between the source metal electrode and the drain metal electrode, removing the first electrode material from the window located above the semiconducting channel material providing a gate dielectric above the semiconducting channel material, and providing a top gate above the gate dielectric, the top gate formed from a second electrode material. The semiconducting channel material is made of tungsten diselenide, the first electrode material and the second electrode material are made of graphene, and the gate dielectric is made of hexagonal boron nitride.

  8. Electrolyte-Sensing Transistor Decals Enabled by Ultrathin Microbial Nanocellulose

    Science.gov (United States)

    Yuen, Jonathan D.; Walper, Scott A.; Melde, Brian J.; Daniele, Michael A.; Stenger, David A.

    2017-01-01

    We report an ultra-thin electronic decal that can simultaneously collect, transmit and interrogate a bio-fluid. The described technology effectively integrates a thin-film organic electrochemical transistor (sensing component) with an ultrathin microbial nanocellulose wicking membrane (sample handling component). As far as we are aware, OECTs have not been integrated in thin, permeable membrane substrates for epidermal electronics. The design of the biocompatible decal allows for the physical isolation of the electronics from the human body while enabling efficient bio-fluid delivery to the transistor via vertical wicking. High currents and ON-OFF ratios were achieved, with sensitivity as low as 1 mg·L‑1.

  9. Carbon nanotube transistors with graphene oxide films as gate dielectrics

    Institute of Scientific and Technical Information of China (English)

    2010-01-01

    Carbon nanomaterials,including the one-dimensional(1-D) carbon nanotube(CNT) and two-dimensional(2-D) graphene,are heralded as ideal candidates for next generation nanoelectronics.An essential component for the development of advanced nanoelectronics devices is processing-compatible oxide.Here,in analogy to the widespread use of silicon dioxide(SiO2) in silicon microelectronic industry,we report the proof-of-principle use of graphite oxide(GO) as a gate dielectrics for CNT field-effect transistor(FET) via a fast and simple solution-based processing in the ambient condition.The exceptional transistor characteristics,including low operation voltage(2 V),high carrier mobility(950 cm2/V-1 s-1),and the negligible gate hysteresis,suggest a potential route to the future all-carbon nanoelectronics.

  10. High mobility solution-processed hybrid light emitting transistors

    Energy Technology Data Exchange (ETDEWEB)

    Walker, Bright; Kim, Jin Young [School of Energy and Chemical Engineering, Ulsan National Institute of Science and Technology, Ulsan 689-798 (Korea, Republic of); Ullah, Mujeeb; Burn, Paul L.; Namdas, Ebinazar B., E-mail: e.namdas@uq.edu.au, E-mail: seojh@dau.ac.kr [Centre for Organic Photonics and Electronics, University of Queensland, Brisbane, Queensland 4072 (Australia); Chae, Gil Jo [Department of Materials Physics, Dong-A University, Busan 604-714 (Korea, Republic of); Department of Physics and EHSRC, University of Ulsan, Ulsan 680-749 (Korea, Republic of); Cho, Shinuk [Department of Physics and EHSRC, University of Ulsan, Ulsan 680-749 (Korea, Republic of); Seo, Jung Hwa, E-mail: e.namdas@uq.edu.au, E-mail: seojh@dau.ac.kr [Department of Materials Physics, Dong-A University, Busan 604-714 (Korea, Republic of)

    2014-11-03

    We report the design, fabrication, and characterization of high-performance, solution-processed hybrid (inorganic-organic) light emitting transistors (HLETs). The devices employ a high-mobility, solution-processed cadmium sulfide layer as the switching and transport layer, with a conjugated polymer Super Yellow as an emissive material in non-planar source/drain transistor geometry. We demonstrate HLETs with electron mobilities of up to 19.5 cm{sup 2}/V s, current on/off ratios of >10{sup 7}, and external quantum efficiency of 10{sup −2}% at 2100 cd/m{sup 2}. These combined optical and electrical performance exceed those reported to date for HLETs. Furthermore, we provide full analysis of charge injection, charge transport, and recombination mechanism of the HLETs. The high brightness coupled with a high on/off ratio and low-cost solution processing makes this type of hybrid device attractive from a manufacturing perspective.

  11. Mapping brain activity with flexible graphene micro-transistors

    CERN Document Server

    Blaschke, Benno M; Guimerà-Brunet, Anton; Weinert, Julia; Rousseau, Lionel; Heimann, Axel; Drieschner, Simon; Kempski, Oliver; Villa, Rosa; Sanchez-Vives, Maria V; Garrido, Jose A

    2016-01-01

    Establishing a reliable communication interface between the brain and electronic devices is of paramount importance for exploiting the full potential of neural prostheses. Current microelectrode technologies for recording electrical activity, however, evidence important shortcomings, e.g. challenging high density integration. Solution-gated field-effect transistors (SGFETs), on the other hand, could overcome these shortcomings if a suitable transistor material were available. Graphene is particularly attractive due to its biocompatibility, chemical stability, flexibility, low intrinsic electronic noise and high charge carrier mobilities. Here, we report on the use of an array of flexible graphene SGFETs for recording spontaneous slow waves, as well as visually evoked and also pre-epileptic activity in vivo in rats. The flexible array of graphene SGFETs allows mapping brain electrical activity with excellent signal-to-noise ratio (SNR), suggesting that this technology could lay the foundation for a future gene...

  12. Organic Light-Emitting Diodes Driven by Organic Transistors

    Institute of Scientific and Technical Information of China (English)

    胡远川; 董桂芳; 王立铎; 梁琰; 邱勇

    2004-01-01

    Organic thin-film field-effect transistors (OTFTs) with pentacene as the semiconductor have been fabricated for driving an organic light-emitting diode (OLED). The driving circuit includes two OTFTs and one storage capacitor. The field-effect mobility of the transistors in the driving circuit is more than 0.3 cm2/Vs, and the on/off ratio is larger than 104. The light-emission area of the OLED is 0. 04mm2 and the brightness is larger than 400cd/m2 when the selected line voltage, data line voltage and drive voltage all are -40 V. The responding characteristics and holding characteristics are also researched when the selected line voltage and the date line voltage are changed.

  13. Pass transistor Based Negative Edge Trigged D Flip Flop (PTDFF

    Directory of Open Access Journals (Sweden)

    S. P. Nagamani Bai

    2014-04-01

    Full Text Available In this paper a new technique is proposed based on the comparison between Conventional Transistorized Flipflopand Data transition Look ahead D flip flop here we are checking the working of DLDFF and the conventional D Flip-flop after that we are analyzing the characteristic comparison using power & area constraints after that we are proposing a Negative Edge triggered flip-flop named as Passtransistor based negative edge trigged D Flip Flop(PTDFF with reduced number of transistors which will reduce the overall power area as well as delay. The simulations are done using Microwind& DSCH analysis software tools and the result between all those types are listed below. Our proposed system simulations are done under 50nm technology and the results are tabulated below. In that our proposed system is showing better output than the other flip-flops compared here.

  14. Dielectrophoretic assembly of semiconducting single-walled carbon nanotube transistor

    Institute of Scientific and Technical Information of China (English)

    Se-Hun KWON; Young-Keun JEONG; Soongeun KWON; Myung-Chang KANG; Hyung-Woo LEE

    2011-01-01

    A novel burning technique for making a semiconducting single-walled carbon nanotubes (SWNTs) transistor assembled by the dielectrophoretic force was suggested. The fabrication process consisted of two steps. First, to align and attach a bundle of SWNTs between the source and drain, the alternating (AC) voltage was applied to the electrodes. When a bundle of SWNTs was connected between two electrodes, some of metallic nanotubes and semi-conducing nanotubes existed together. The second step is to burn the metallic SWNTS by applying the voltage between two electrodes. With increasing the voltage, more current flowed through the metallic SWNTs, thus, the metallic SWNTs burnt earlier than the semiconducting one. This technique enables to obtain only semi-conducting SWNTs connection in the transistor. Through the I-Vcharacteristic graph, the moment of metallic SWNTs burning and the characteristic of semi-conducing nanotubes were verified.

  15. Compact core model for Symmetric Double-Gate Junctionless Transistors

    Science.gov (United States)

    Cerdeira, A.; Ávila, F.; Íñiguez, B.; de Souza, M.; Pavanello, M. A.; Estrada, M.

    2014-04-01

    A new charge-based compact analytical model for Symmetric Double-Gate Junctionless Transistors is presented. The model is physically-based and considers both the depletion and accumulation operating conditions including the series resistance effects. Most model parameters are related to physical magnitudes and the extraction procedure for each of them is well established. The model provides an accurate continuous description of the transistor behavior in all operating conditions. Among important advantages with respect to previous models are the inclusion of the effect of the series resistance and the fulfilment of being symmetrical with respect to drain voltage equal to zero. It is validated with simulations for doping concentrations of 5 × 1018 and 1 × 1019 cm-3, as well as for layer thickness of 10 and 15 nm, allowing normally-off operation.

  16. Orientation selectivity in a multi-gated organic electrochemical transistor

    Science.gov (United States)

    Gkoupidenis, Paschalis; Koutsouras, Dimitrios A.; Lonjaret, Thomas; Fairfield, Jessamyn A.; Malliaras, George G.

    2016-06-01

    Neuromorphic devices offer promising computational paradigms that transcend the limitations of conventional technologies. A prominent example, inspired by the workings of the brain, is spatiotemporal information processing. Here we demonstrate orientation selectivity, a spatiotemporal processing function of the visual cortex, using a poly(3,4ethylenedioxythiophene):poly(styrene sulfonate) (PEDOT:PSS) organic electrochemical transistor with multiple gates. Spatially distributed inputs on a gate electrode array are found to correlate with the output of the transistor, leading to the ability to discriminate between different stimuli orientations. The demonstration of spatiotemporal processing in an organic electronic device paves the way for neuromorphic devices with new form factors and a facile interface with biology.

  17. Fullerene thin-film transistors fabricated on polymeric gate dielectric

    Energy Technology Data Exchange (ETDEWEB)

    Puigdollers, J. [Micro and Nano Technology Group (MNT), Dept. Enginyeria Electronica, Universitat Politecnica Catalunya, C/ Jordi Girona 1-3, Modul C4, 08034-Barcelona (Spain)], E-mail: jpuigd@eel.upc.edu; Voz, C. [Micro and Nano Technology Group (MNT), Dept. Enginyeria Electronica, Universitat Politecnica Catalunya, C/ Jordi Girona 1-3, Modul C4, 08034-Barcelona (Spain); Cheylan, S. [ICFO - Mediterranean Technology Park, Avda del Canal Olimpic s/n, 08860-Castelldefels (Spain); Orpella, A.; Vetter, M.; Alcubilla, R. [Micro and Nano Technology Group (MNT), Dept. Enginyeria Electronica, Universitat Politecnica Catalunya, C/ Jordi Girona 1-3, Modul C4, 08034-Barcelona (Spain)

    2007-07-16

    Thin-film transistors with fullerene as n-type organic semiconductor have been fabricated. A polymeric gate dielectric, polymethyl methacrylate, has been used as an alternative to usual inorganic dielectrics. No significant differences in the microstructure of fullerene thin-films grown on polymethyl methacrylate were observed. Devices with either gold or aluminium top electrodes have been fabricated. Although the lower work-function of aluminium compared to gold should favour electron injection, similar field-effect mobilities in the range of 10{sup -2} cm{sup 2} V{sup -1} s{sup -1} were achieved in both cases. Actually, the output characteristics indicate that organic thin-film transistors behave more linearly with gold than with aluminium electrodes. These results confirm that not only energy barriers determine carrier injection at metal/organic interfaces, but also chemical interactions.

  18. Graphene-graphite oxide field-effect transistors.

    Science.gov (United States)

    Standley, Brian; Mendez, Anthony; Schmidgall, Emma; Bockrath, Marc

    2012-03-14

    Graphene's high mobility and two-dimensional nature make it an attractive material for field-effect transistors. Previous efforts in this area have used bulk gate dielectric materials such as SiO(2) or HfO(2). In contrast, we have studied the use of an ultrathin layered material, graphene's insulating analogue, graphite oxide. We have fabricated transistors comprising single or bilayer graphene channels, graphite oxide gate insulators, and metal top-gates. The graphite oxide layers show relatively minimal leakage at room temperature. The breakdown electric field of graphite oxide was found to be comparable to SiO(2), typically ~1-3 × 10(8) V/m, while its dielectric constant is slightly higher, κ ≈ 4.3.

  19. A Single-Transistor Active Pixel CMOS Image Sensor Architecture

    Institute of Scientific and Technical Information of China (English)

    ZHANG Guo-An; ZHANG Dong-Wei; HE Jin; SU Yan-Mei; WANG Cheng; CHEN Qin; LIANG Hai-Lang; YE Yun

    2012-01-01

    A single-transistor CMOS active pixel image sensor (1T CMOS APS) architecture is proposed,By switching the photosensing pinned diode,resetting and selecting can be achieved by diode pull-up and capacitive coupling pull-down of the source follower. Thus,the reset and selected transistors can be removed. In addition,the reset and selected signal lines can be shared to reduce the metal signal line,leading to a very high fill factor.The pixel design and operation principles are discussed in detail.The functionality of the proposed 1 T CMOS APS architecture has been experimentally verified using a fabricated chip in a standard 0.35 μm CMOS AMIS technology.

  20. Capacitance Variation of Electrolyte-Gated Bilayer Graphene Based Transistors

    Directory of Open Access Journals (Sweden)

    Hediyeh Karimi

    2013-01-01

    Full Text Available Quantum capacitance of electrolyte-gated bilayer graphene field-effect transistors is investigated in this paper. Bilayer graphene has received huge attention due to the fact that an energy gap could be opened by chemical doping or by applying external perpendicular electric field. So, this extraordinary property can be exploited to use bilayer graphene as a channel in electrolyte-gated field-effect transistors. The quantum capacitance of bi-layer graphene with an equivalent circuit is presented, and also based on the analytical model a numerical solution is reported. We begin by modeling the DOS, followed by carrier concentration as a function V in degenerate and nondegenerate regimes. To further confirm this viewpoint, the presented analytical model is compared with experimental data, and acceptable agreement is reported.

  1. Reconfigurable Boolean Logic Using Magnetic Single-Electron Transistors

    Science.gov (United States)

    Gonzalez-Zalba, M. Fernando; Ciccarelli, Chiara; Zarbo, Liviu P.; Irvine, Andrew C.; Campion, Richard C.; Gallagher, Bryan L.; Jungwirth, Tomas; Ferguson, Andrew J.; Wunderlich, Joerg

    2015-01-01

    We propose a novel hybrid single-electron device for reprogrammable low-power logic operations, the magnetic single-electron transistor (MSET). The device consists of an aluminium single-electron transistor with a GaMnAs magnetic back-gate. Changing between different logic gate functions is realized by reorienting the magnetic moments of the magnetic layer, which induces a voltage shift on the Coulomb blockade oscillations of the MSET. We show that we can arbitrarily reprogram the function of the device from an n-type SET for in-plane magnetization of the GaMnAs layer to p-type SET for out-of-plane magnetization orientation. Moreover, we demonstrate a set of reprogrammable Boolean gates and its logical complement at the single device level. Finally, we propose two sets of reconfigurable binary gates using combinations of two MSETs in a pull-down network. PMID:25923789

  2. A Fast Dynamic 64-bit Comparator with Small Transistor Count

    Directory of Open Access Journals (Sweden)

    Chua-Chin Wang

    2002-01-01

    Full Text Available In this paper, we propose a 64-bit fast dynamic CMOS comparator with small transistor count. Major features of the proposed comparator are the rearrangement and re-ordering of transistors in the evaluation block of a dynamic cell, and the insertion of a weak n feedback inverter, which helps the pull-down operation to ground. The simulation results given by pre-layout tools, e.g. HSPICE, and post-layout tools, e.g. TimeMill, reveal that the delay is around 2.5 ns while the operating clock rate reaches 100 MHz. A physical chip is fabricated to verify the correctness of our design by using UMC (United Microelectronics Company 0.5 μm (2P2M technology.

  3. Thin film transistors for flexible electronics: contacts, dielectrics and semiconductors.

    Science.gov (United States)

    Quevedo-Lopez, M A; Wondmagegn, W T; Alshareef, H N; Ramirez-Bon, R; Gnade, B E

    2011-06-01

    The development of low temperature, thin film transistor processes that have enabled flexible displays also present opportunities for flexible electronics and flexible integrated systems. Of particular interest are possible applications in flexible sensor systems for unattended ground sensors, smart medical bandages, electronic ID tags for geo-location, conformal antennas, radiation detectors, etc. In this paper, we review the impact of gate dielectrics, contacts and semiconductor materials on thin film transistors for flexible electronics applications. We present our recent results to fully integrate hybrid complementary metal oxide semiconductors comprising inorganic and organic-based materials. In particular, we demonstrate novel gate dielectric stacks and semiconducting materials. The impact of source and drain contacts on device performance is also discussed.

  4. Modeling and Simulation of Photoelectronic Lambda Bipolar Transistor

    Institute of Scientific and Technical Information of China (English)

    2005-01-01

    Based on the region model of lambda bipolar transistor (LBT), a dividing region theory model of PLBT is set up,simulated and verified. Firstly, the principal operations of different kinds of photoelectronic lambda bipolar transistor (PLBT) are characterized by a simple circuit model.Through mathematical analysis of the equivalent circuit, the typical characteristics curve is divided into positive resistance, peak, negative resistance and cutoff regions. Secondly, by analyzing and simulating this model, the ratio of MOSFET width to channel length, threshold voltage and common emitter gain are discovered as the main structure parameters that determine the characteristic curves of PLBT. And peak region width, peak current value, negative resistance value and valley voltage value of PLBT can be changed conveniently according to the actual demands by modifying these parameters. Finally comparisons of the characteristics of the fabricated devices and the simulation results are made, which show that the analytical results are in agreement with the observed devices characteristics.

  5. Carbon Nanotubes for Thin Film Transistor: Fabrication, Properties, and Applications

    Directory of Open Access Journals (Sweden)

    Yucui Wu

    2013-01-01

    Full Text Available We review the present status of single-walled carbon nanotubes (SWCNTs for their production and purification technologies, as well as the fabrication and properties of single-walled carbon nanotube thin film transistors (SWCNT-TFTs. The most popular SWCNT growth method is chemical vapor deposition (CVD, including plasma-enhanced chemical vapor deposition (PECVD, floating catalyst chemical vapor deposition (FCCVD, and thermal CVD. Carbon nanotubes (CNTs used to fabricate thin film transistors are sorted by electrical breakdown, density gradient ultracentrifugation, or gel-based separation. The technologies of applying CNT random networks to work as the channels of SWCNT-TFTs are also reviewed. Excellent work from global researchers has been benchmarked and analyzed. The unique properties of SWCNT-TFTs have been reviewed. Besides, the promising applications of SWCNT-TFTs have been explored. Finally, the key issues to be solved in future have been summarized.

  6. Wavy channel transistor for area efficient high performance operation

    KAUST Repository

    Fahad, Hossain M.

    2013-04-05

    We report a wavy channel FinFET like transistor where the channel is wavy to increase its width without any area penalty and thereby increasing its drive current. Through simulation and experiments, we show the effectiveness of such device architecture is capable of high performance operation compared to conventional FinFETs with comparatively higher area efficiency and lower chip latency as well as lower power consumption.

  7. Transit-Time Spin Field-Effect-Transistor

    OpenAIRE

    Appelbaum, Ian; Monsma, Douwe

    2007-01-01

    We propose and analyze a four-terminal metal-semiconductor device that uses hot-electron transport through thin ferromagnetic films to inject and detect a charge-coupled spin current transported through the conduction band of an arbitrary semiconductor. This provides the possibility of realizing a spin field-effect-transistor in Si, using electrostatic transit-time control in a perpendicular magnetic field, rather than Rashba effect with spin-orbit interaction.

  8. Ballistic Thermal Transistor of Dielectric Four-terminal Nanostructures

    OpenAIRE

    Yang, Ping; Hu, Bambi

    2009-01-01

    We report a theoretical model for a thermal transistor in dielectric four-terminal nanostructures based on mesoscopic ballistic phonon transport, in which a steady thermal flow condition of system is obtained to set up the temperature field effect of gate. In the environment, thermal flow shows the transisting behaviors at low temperatures: saturation, asymmetry, and rectification. The phenomena can be explained reasonably by the nonlinear variation of the temperature dependence of propagatin...

  9. Field-effect transistors assembled from functionalized carbon nanotubes

    OpenAIRE

    Klinke, Christian; Hannon, James B.; Afzali, Ali; Avouris, Phaedon

    2006-01-01

    We have fabricated field effect transistors from carbon nanotubes using a novel selective placement scheme. We use carbon nanotubes that are covalently bound to molecules containing hydroxamic acid functionality. The functionalized nanotubes bind strongly to basic metal oxide surfaces, but not to silicon dioxide. Upon annealing, the functionalization is removed, restoring the electronic properties of the nanotubes. The devices we have fabricated show excellent electrical characteristics.

  10. Kinase detection with gallium nitride based high electron mobility transistors.

    Science.gov (United States)

    Makowski, Matthew S; Bryan, Isaac; Sitar, Zlatko; Arellano, Consuelo; Xie, Jinqiao; Collazo, Ramon; Ivanisevic, Albena

    2013-07-01

    A label-free kinase detection system was fabricated by the adsorption of gold nanoparticles functionalized with kinase inhibitor onto AlGaN/GaN high electron mobility transistors (HEMTs). The HEMTs were operated near threshold voltage due to the greatest sensitivity in this operational region. The Au NP/HEMT biosensor system electrically detected 1 pM SRC kinase in ionic solutions. These results are pertinent to drug development applications associated with kinase sensing.

  11. Electronic polymers and DNA self-assembled in nanowire transistors.

    Science.gov (United States)

    Hamedi, Mahiar; Elfwing, Anders; Gabrielsson, Roger; Inganäs, Olle

    2013-02-11

    Aqueous self-assembly of DNA and molecular electronic materials can lead to the creation of innumerable copies of identical devices, and inherently programmed complex nanocircuits. Here self-assembly of a water soluble and highly conducting polymer PEDOT-S with DNA in aqueous conditions is shown. Orientation and assembly of the conducting DNA/PEDOT-S complex into electrochemical DNA nanowire transistors is demonstrated.

  12. Intrinsically stretchable and healable semiconducting polymer for organic transistors

    Science.gov (United States)

    Oh, Jin Young; Rondeau-Gagné, Simon; Chiu, Yu-Cheng; Chortos, Alex; Lissel, Franziska; Wang, Ging-Ji Nathan; Schroeder, Bob C.; Kurosawa, Tadanori; Lopez, Jeffrey; Katsumata, Toru; Xu, Jie; Zhu, Chenxin; Gu, Xiaodan; Bae, Won-Gyu; Kim, Yeongin; Jin, Lihua; Chung, Jong Won; Tok, Jeffrey B.-H.; Bao, Zhenan

    2016-11-01

    Thin-film field-effect transistors are essential elements of stretchable electronic devices for wearable electronics. All of the materials and components of such transistors need to be stretchable and mechanically robust. Although there has been recent progress towards stretchable conductors, the realization of stretchable semiconductors has focused mainly on strain-accommodating engineering of materials, or blending of nanofibres or nanowires into elastomers. An alternative approach relies on using semiconductors that are intrinsically stretchable, so that they can be fabricated using standard processing methods. Molecular stretchability can be enhanced when conjugated polymers, containing modified side-chains and segmented backbones, are infused with more flexible molecular building blocks. Here we present a design concept for stretchable semiconducting polymers, which involves introducing chemical moieties to promote dynamic non-covalent crosslinking of the conjugated polymers. These non-covalent crosslinking moieties are able to undergo an energy dissipation mechanism through breakage of bonds when strain is applied, while retaining high charge transport abilities. As a result, our polymer is able to recover its high field-effect mobility performance (more than 1 square centimetre per volt per second) even after a hundred cycles at 100 per cent applied strain. Organic thin-film field-effect transistors fabricated from these materials exhibited mobility as high as 1.3 square centimetres per volt per second and a high on/off current ratio exceeding a million. The field-effect mobility remained as high as 1.12 square centimetres per volt per second at 100 per cent strain along the direction perpendicular to the strain. The field-effect mobility of damaged devices can be almost fully recovered after a solvent and thermal healing treatment. Finally, we successfully fabricated a skin-inspired stretchable organic transistor operating under deformations that might be

  13. Advances in organic field-effect transistors and integrated circuits

    Institute of Scientific and Technical Information of China (English)

    2009-01-01

    Organic field-effect transistors (OFETs) have received significant research interest because of their promising applications in low cast, lager area, plastic circuits, and tremendous progress has been made in materials, device performance, OFETs based circuits in recent years. In this article we introduce the advances in organic semiconductor materials, OFETs based integrating techniques, and in particular highlight the recent progress. Finally, the prospects and problems of OFETs are discussed.

  14. Doping To Reduce Base Resistances Of Bipolar Transistors

    Science.gov (United States)

    Lin, True-Lon

    1991-01-01

    Modified doping profile proposed to reduce base resistance of bipolar transistors. A p/p+ base-doping profile reduces base resistance without reducing current gain. Proposed low/high base-doping profile realized by such low-temperature deposition techniques as molecular-beam epitaxy, ultra-high-vacuum chemical-vapor deposition, and limited-reaction epitaxy. Produces desired doping profiles without excessive diffusion of dopant.

  15. A scheme for a topological insulator field effect transistor

    Science.gov (United States)

    Vali, Mehran; Dideban, Daryoosh; Moezi, Negin

    2015-05-01

    We propose a scheme for a topological insulator field effect transistor. The idea is based on the gate voltage control of the Dirac fermions in a ferromagnetic topological insulator channel with perpendicular magnetization connecting to two metallic topological insulator leads. Our theoretical analysis shows that the proposed device displays a switching effect with high on/off current ratio and a negative differential conductance with a good peak to valley ratio.

  16. Biomolecular detection using a metal semiconductor field effect transistor

    Science.gov (United States)

    Estephan, Elias; Saab, Marie-Belle; Buzatu, Petre; Aulombard, Roger; Cuisinier, Frédéric J. G.; Gergely, Csilla; Cloitre, Thierry

    2010-04-01

    In this work, our attention was drawn towards developing affinity-based electrical biosensors, using a MESFET (Metal Semiconductor Field Effect Transistor). Semiconductor (SC) surfaces must be prepared before the incubations with biomolecules. The peptides route was adapted to exceed and bypass the limits revealed by other types of surface modification due to the unwanted unspecific interactions. As these peptides reveal specific recognition of materials, then controlled functionalization can be achieved. Peptides were produced by phage display technology using a library of M13 bacteriophage. After several rounds of bio-panning, the phages presenting affinities for GaAs SC were isolated; the DNA of these specific phages were sequenced, and the peptide with the highest affinity was synthesized and biotinylated. To explore the possibility of electrical detection, the MESFET fabricated with the GaAs SC were used to detect the streptavidin via the biotinylated peptide in the presence of the bovine Serum Albumin. After each surface modification step, the IDS (current between the drain and the source) of the transistor was measured and a decrease in the intensity was detected. Furthermore, fluorescent microscopy was used in order to prove the specificity of this peptide and the specific localisation of biomolecules. In conclusion, the feasibility of producing an electrical biosensor using a MESFET has been demonstrated. Controlled placement, specific localization and detection of biomolecules on a MESFET transistor were achieved without covering the drain and the source. This method of functionalization and detection can be of great utility for biosensing application opening a new way for developing bioFETs (Biomolecular Field-Effect Transistor).

  17. Advances in organic field-effect transistors and integrated circuits

    Institute of Scientific and Technical Information of China (English)

    WANG Hong; JI ZhuoYu; LIU Ming; SHANG LiWei; LIU Ge; LIU XingHua; LIU Jiang; PENG YingQuan

    2009-01-01

    Organic field-effect transistors (OFETs) have received significant research interest because of their promising applications in low cast, lager area, plastic circuits, and tremendous progress has been made in materials, device performance, OFETs based circuits in recent years.In this article we intro-duce the advances in organic semiconductor materials, OFETs based integrating techniques, and in particular highlight the recent progress.Finally, the prospects and problems of OFETs are discussed.

  18. Organic Field-effect Transistors Based on Tetrathiafulvalene Derivatives

    Institute of Scientific and Technical Information of China (English)

    2007-01-01

    1 Restults Tetrathiafulvalene (TTF) and its derivatives have been extensively investigated in the field of organic conductors and superconductors since 1973. Recently, their application in organic field-effect transistors (OFETs) has attracted considerable attention. So far, on the one hand, the fabrication techniques of the TTF-based FETs have been primarily limited to high vacuum evaporation, which is a relatively expensive process. On the other hand, low FET performances, such as the low on/off ratio...

  19. Transistor electronics use of semiconductor components in switching operations

    CERN Document Server

    Rumpf, Karl-Heinz

    2014-01-01

    Transistor Electronics: Use of Semiconductor Components in Switching Operations presents the semiconductor components as well as their elementary circuits. This book discusses the scope of application of electronic devices to increase productivity. Organized into eight chapters, this book begins with an overview of the general equation for the representation of integer positive numbers. This text then examines the properties and characteristics of basic electronic components, which relates to an understanding of the operation of semiconductors. Other chapters consider the electronic circuit ar

  20. Organic thin film transistor integration a hybrid approach

    CERN Document Server

    Li, Flora; Wu, Yiliang; Ong, Beng S

    2013-01-01

    Research on organic electronics (or plastic electronics) is driven by the need to create systems that are lightweight, unbreakable, and mechanically flexible. With the remarkable improvement in the performance of organic semiconductor materials during the past few decades, organic electronics appeal to innovative, practical, and broad-impact applications requiring large-area coverage, mechanical flexibility, low-temperature processing, and low cost. Thus, organic electronics appeal to a broad range of electronic devices and products including transistors, diodes, sensors, solar cells, lighting

  1. Field-effect tunneling transistor based on vertical graphene heterostructures

    OpenAIRE

    Britnell, L.; Gorbachev, R. V.; Jalil, R.; Belle, B. D.; Schedin, F.; Mishchenko, A.; Georgiou, T; Katsnelson, M. I.; Eaves, L.; Morozov, S. V.; Peres, N. M. R.; Leist, J.; Geim, A. K.; Novoselov, K.S.; Ponomarenko, L. A.

    2012-01-01

    We report a bipolar field effect tunneling transistor that exploits to advantage the low density of states in graphene and its one atomic layer thickness. Our proof-of-concept devices are graphene heterostructures with atomically thin boron nitride acting as a tunnel barrier. They exhibit room temperature switching ratios ~50, a value that can be enhanced further by optimizing the device structure. These devices have potential for high frequency operation and large scale integration.

  2. Transistor-based metamaterials with dynamically tunable nonlinear susceptibility

    Science.gov (United States)

    Barrett, John P.; Katko, Alexander R.; Cummer, Steven A.

    2016-08-01

    We present the design, analysis, and experimental demonstration of an electromagnetic metamaterial with a dynamically tunable effective nonlinear susceptibility. Split-ring resonators loaded with transistors are shown theoretically and experimentally to act as metamaterials with a second-order nonlinear susceptibility that can be adjusted through the use of a bias voltage. Measurements confirm that this allows for the design of a nonlinear metamaterial with adjustable mixing efficiency.

  3. InP Heterojunction Bipolar Transistor Amplifiers to 255 GHz

    Science.gov (United States)

    Radisic, Vesna; Sawdai, Donald; Scott, Dennis; Deal, William; Dang, Linh; Li, Danny; Cavus, Abdullah; To, Richard; Lai, Richard

    2009-01-01

    Two single-stage InP heterojunction bipolar transistor (HBT) amplifiers operate at 184 and 255 GHz, using Northrop Grumman Corporation s InP HBT MMIC (monolithic microwave integrated circuit) technology. At the time of this reporting, these are reported to be the highest HBT amplifiers ever created. The purpose of the amplifier design is to evaluate the technology capability for high-frequency designs and verify the model for future development work.

  4. Development of Microwave SiGe Heterojunction Bipolar Transistors

    Institute of Scientific and Technical Information of China (English)

    2000-01-01

    The microwave SiGe Heterojunction Bipolar Transistors (HBT) were fabricated by the material grown with home-made high vacuum/rapid thermal processing chemical vapor deposition equipment. The HBTs show good performance and industrial use value. The current gain is beyond 100;the breakdown voltage BVceo is 3.3V,and the cut-off frequency is 12.5GHz which is measured in packaged form.

  5. Terahertz detection of magnetic field-driven topological phase transition in HgTe-based transistors

    Energy Technology Data Exchange (ETDEWEB)

    Kadykov, A. M. [Laboratoire Charles Coulomb (L2C), UMR CNRS 5221, Universite Montpellier, 34095 Montpellier (France); Institute for Physics of Microstructures, Russian Academy of Sciences, GSP-105, Nizhny Novgorod 603950 (Russian Federation); Teppe, F., E-mail: frederic.teppe@univ-montp2.fr; Consejo, C.; Ruffenach, S.; Marcinkiewicz, M.; Desrat, W.; Dyakonova, N.; Knap, W. [Laboratoire Charles Coulomb (L2C), UMR CNRS 5221, Universite Montpellier, 34095 Montpellier (France); Viti, L.; Vitiello, M. S. [NEST, Istituto Nanoscienze-CNR and Scuola Normale Superiore, I-56127 Pisa (Italy); Krishtopenko, S. S.; Morozov, S. V.; Gavrilenko, V. I. [Institute for Physics of Microstructures, Russian Academy of Sciences, GSP-105, Nizhny Novgorod 603950 (Russian Federation); Lobachevsky State University, 23 Prospekt Gagarina, 603950 Nizhny Novgorod (Russian Federation); Mikhailov, N. N.; Dvoretsky, S. A. [Institute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences, pr. Akademika Lavrent' eva 13, Novosibirsk 630090 (Russian Federation)

    2015-10-12

    We report on terahertz photoconductivity under magnetic field up to 16 T of field effect transistor based on HgTe quantum well (QW) with an inverted band structure. We observe pronounced cyclotron resonance and Shubnikov-de Haas-like oscillations, indicating a high mobility electron gas in the transistor channel. We discover that nonlinearity of the transistor channel allows for observation of characteristic features in photoconductivity at critical magnetic field corresponding to the phase transition between topological quantum spin Hall and trivial quantum Hall states in HgTe QW. Our results pave the way towards terahertz topological field effect transistors.

  6. Field-effect transistor chemical sensors of single nanoribbon of copper phthalocyanine

    Institute of Scientific and Technical Information of China (English)

    2009-01-01

    Copper phthalocyanine (CuPc) nanoribbon field-effect transistors were implemented as chemical sensors. They showed fast response and high reversibility in the detection of the tetrahydrofuran atmosphere at room temperature. The drain current of the field-effect transistor sensor decreased from 6.7 to 0.2 nA when the transistor was measured under the tetrahydrofuran atmosphere. The sensor was self-refreshable in a few minutes. These results demonstrate that the organic single crystalline nanoribbon transistors could effectively act as chemical sensors.

  7. Development and fabrication of improved power transistor switches. [fabrication and manufacturing of semiconductor devices

    Science.gov (United States)

    Hower, P. L.; Chu, C. K.

    1976-01-01

    A new class of high-voltage power transistors has been achieved by adapting present interdigitated thyristor processing techniques to the fabrication of NPN Si transistors. Present devices are 2.3 cm in diameter. The electrical performance obtained is consistent with the predictions of an optimum design theory specifically developed for power switching transistors. The forward safe operating area of the experimental transistors shows a significant improvement over commercially available devices. The report describes device design, wafer processing, and various measurements which include dc characteristics, forward and reverse second breakdown limits, and switching times.

  8. Neutron Radiation Effect On 2N2222 And NTE 123 NPN Silicon Bipolar Junction Transistors

    Science.gov (United States)

    Oo, Myo Min; Rashid, N. K. A. Md; Karim, J. Abdul; Zin, M. R. Mohamed; Hasbullah, N. F.

    2013-12-01

    This paper examines neutron radiation with PTS (Pneumatic Transfer System) effect on silicon NPN bipolar junction transistors (2N2222 and NTE 123) and analysis of the transistors in terms of electrical characterization such as current gain after neutron radiation. The key parameters are measured with Keithley 4200SCS. Experiment results show that the current gain degradation of the transistors is very sensitive to neutron radiation. The neutron radiation can cause displacement damage in the bulk layer of the transistor structure. The current degradation is believed to be governed by increasing recombination current between the base and emitter depletion region.

  9. Transistor-based filter for inhibiting load noise from entering a power supply

    Science.gov (United States)

    Taubman, Matthew S

    2013-07-02

    A transistor-based filter for inhibiting load noise from entering a power supply is disclosed. The filter includes a first transistor having an emitter coupled to a power supply, a collector coupled to a load, and a base. The filter also includes a first capacitor coupled between the base of the first transistor and a ground terminal. The filter further includes an impedance coupled between the base and a node between the collector and the load, or a second transistor and second capacitor. The impedance can be a resistor or an inductor.

  10. Coulomb blockade in a Si channel gated by an Al single-electron transistor

    OpenAIRE

    Sun, L.; K. R. Brown; Kane, B. E.

    2007-01-01

    We incorporate an Al-AlO_x-Al single-electron transistor as the gate of a narrow (~100 nm) metal-oxide-semiconductor field-effect transistor (MOSFET). Near the MOSFET channel conductance threshold, we observe oscillations in the conductance associated with Coulomb blockade in the channel, revealing the formation of a Si single-electron transistor. Abrupt steps present in sweeps of the Al transistor conductance versus gate voltage are correlated with single-electron charging events in the Si t...

  11. Sub-THz photonic frequency conversion using optoelectronic transistors for future fully coherent access network systems

    Science.gov (United States)

    Otsuji, Taiichi; Sugawara, Kenta; Tamamushi, Gen; Dobroiu, Adrian; Suemitsu, Tetsuya; Ryzhii, Victor; Iwatsuki, Katsumi; Kuwano, Shigeru; Kani, Jun-ichi; Terada, Jun

    2016-02-01

    This paper reviews advances in sub-THz photonic frequency conversion using optoelectronic transistors for future fully coherent access network systems. Graphene-channel field effect transistors (G-FETs) and InP-based high electron mobility transistors (inP-HEMT) are experimentally examined as photonic frequency converters. Optoelectronic properties and three-terminal functionalities of the G-FETs and InP-HEMTs are exploited to perform single-chip photonic double-mixing operation over the 120 GHz wireless communication band. A single transistor can photomix the optical subcarriers to generate LO and mix down the RF data on the sub-THz carrier to the IF band.

  12. Electrically controlled spin-transistor operation in a helical magnetic field

    Science.gov (United States)

    Wójcik, P.; Adamowski, J.

    2016-03-01

    A proposal of an electrically controlled spin transistor in a helical magnetic field is presented. In the proposed device, the transistor action is driven by the Landau-Zener transitions that lead to a backscattering of spin polarized electrons and switching the transistor into the high-resistance state (off state). The on/off state of the transistor can be controlled by the all-electric means using Rashba spin-orbit coupling that can be tuned by the voltages applied to the side electrodes.

  13. Infrared light gated MoS₂ field effect transistor.

    Science.gov (United States)

    Fang, Huajing; Lin, Ziyuan; Wang, Xinsheng; Tang, Chun-Yin; Chen, Yan; Zhang, Fan; Chai, Yang; Li, Qiang; Yan, Qingfeng; Chan, H L W; Dai, Ji-Yan

    2015-12-14

    Molybdenum disulfide (MoS₂) as a promising 2D material has attracted extensive attentions due to its unique physical, optical and electrical properties. In this work, we demonstrate an infrared (IR) light gated MoS₂ transistor through a device composed of MoS₂ monolayer and a ferroelectric single crystal Pb(Mg(1/3)Nb(2/3))O₃-PbTiO₃ (PMN-PT). With a monolayer MoS₂ onto the top surface of (111) PMN-PT crystal, the drain current of MoS₂ channel can be modulated with infrared illumination and this modulation process is reversible. Thus, the transistor can work as a new kind of IR photodetector with a high IR responsivity of 114%/Wcm⁻². The IR response of MoS₂ transistor is attributed to the polarization change of PMN-PT single crystal induced by the pyroelectric effect which results in a field effect. Our result promises the application of MoS₂ 2D material in infrared optoelectronic devices. Combining with the intrinsic photocurrent feature of MoS₂ in the visible range, the MoS₂ on ferroelectric single crystal may be sensitive to a broadband wavelength of light.

  14. Interdigitated Extended Gate Field Effect Transistor Without Reference Electrode

    Science.gov (United States)

    Ali, Ghusoon M.

    2017-02-01

    An interdigitated extended gate field effect transistor (IEGFET) has been proposed as a modified pH sensor structure of an extended gate field effect transistor (EGFET). The reference electrode and the extended gate in the conventional device have been replaced by a single interdigitated extended gate. A metal-semiconductor-metal interdigitated extended gate containing two multi-finger Ni electrodes based on zinc oxide (ZnO) thin film as a pH-sensitive membrane. ZnO thin film was grown on a p-type Si (100) substrate by the sol-gel technique. The fabricated extended gate is connected to a commercial metal-oxide-semiconductor field-effect transistor device in CD4007UB. The experimental data show that this structure has real time and linear pH voltage and current sensitivities in a concentration range between pH 4 and 11. The voltage and current sensitivities are found to be about 22.4 mV/pH and 45 μA/pH, respectively. Reference electrode elimination makes the IEGFET device simple to fabricate, easy to carry out the measurements, needing a small volume of solution to test and suitable for disposable biosensor applications. Furthermore, this uncomplicated structure could be extended to fabricate multiple ions microsensors and lab-on-chip devices.

  15. Capacitance-modulated transistor detects odorant binding protein chiral interactions

    Science.gov (United States)

    Mulla, Mohammad Yusuf; Tuccori, Elena; Magliulo, Maria; Lattanzi, Gianluca; Palazzo, Gerardo; Persaud, Krishna; Torsi, Luisa

    2015-01-01

    Peripheral events in olfaction involve odorant binding proteins (OBPs) whose role in the recognition of different volatile chemicals is yet unclear. Here we report on the sensitive and quantitative measurement of the weak interactions associated with neutral enantiomers differentially binding to OBPs immobilized through a self-assembled monolayer to the gate of an organic bio-electronic transistor. The transduction is remarkably sensitive as the transistor output current is governed by the small capacitance of the protein layer undergoing minute changes as the ligand-protein complex is formed. Accurate determination of the free-energy balances and of the capacitance changes associated with the binding process allows derivation of the free-energy components as well as of the occurrence of conformational events associated with OBP ligand binding. Capacitance-modulated transistors open a new pathway for the study of ultra-weak molecular interactions in surface-bound protein-ligand complexes through an approach that combines bio-chemical and electronic thermodynamic parameters.

  16. Irradiation of graphene field effect transistors with highly charged ions

    Science.gov (United States)

    Ernst, P.; Kozubek, R.; Madauß, L.; Sonntag, J.; Lorke, A.; Schleberger, M.

    2016-09-01

    In this work, graphene field-effect transistors are used to detect defects due to irradiation with slow, highly charged ions. In order to avoid contamination effects, a dedicated ultra-high vacuum set up has been designed and installed for the in situ cleaning and electrical characterization of graphene field-effect transistors during irradiation. To investigate the electrical and structural modifications of irradiated graphene field-effect transistors, their transfer characteristics as well as the corresponding Raman spectra are analyzed as a function of ion fluence for two different charge states. The irradiation experiments show a decreasing mobility with increasing fluences. The mobility reduction scales with the potential energy of the ions. In comparison to Raman spectroscopy, the transport properties of graphene show an extremely high sensitivity with respect to ion irradiation: a significant drop of the mobility is observed already at fluences below 15 ions/μm2, which is more than one order of magnitude lower than what is required for Raman spectroscopy.

  17. Ballistic modeling of InAs nanowire transistors

    Science.gov (United States)

    Jansson, Kristofer; Lind, Erik; Wernersson, Lars-Erik

    2016-01-01

    In this work, the intrinsic performance of InAs nanowire transistors is evaluated in the ballistic limit. A self-consistent Schrödinger-Poisson solver is utilized in the cylindrical geometry, while accounting for conduction band non-parabolicity. The transistor characteristics are derived from simulations of ballistic transport within the nanowire. Using this approach, the performance is calculated for a continuous range of nanowire diameters and the transport properties are mapped. A transconductance exceeding 4S /mm is predicted at a gate overdrive of 0.5V and it is shown that the performance is improved with scaling. Furthermore, the influence from including self-consistency and non-parabolicity in the band structure simulations is quantified. It is demonstrated that the effective mass approximation underestimates the transistor performance due to the highly non-parabolic conduction band in InAs. Neglecting self-consistency severely overestimates the device performance, especially for thick nanowires. The error introduced by both of these approximations gets increasingly worse under high bias conditions.

  18. Organic field-effect transistors using single crystals

    Directory of Open Access Journals (Sweden)

    Tatsuo Hasegawa and Jun Takeya

    2009-01-01

    Full Text Available Organic field-effect transistors using small-molecule organic single crystals are developed to investigate fundamental aspects of organic thin-film transistors that have been widely studied for possible future markets for 'plastic electronics'. In reviewing the physics and chemistry of single-crystal organic field-effect transistors (SC-OFETs, the nature of intrinsic charge dynamics is elucidated for the carriers induced at the single crystal surfaces of molecular semiconductors. Materials for SC-OFETs are first reviewed with descriptions of the fabrication methods and the field-effect characteristics. In particular, a benchmark carrier mobility of 20–40 cm2 Vs−1, achieved with thin platelets of rubrene single crystals, demonstrates the significance of the SC-OFETs and clarifies material limitations for organic devices. In the latter part of this review, we discuss the physics of microscopic charge transport by using SC-OFETs at metal/semiconductor contacts and along semiconductor/insulator interfaces. Most importantly, Hall effect and electron spin resonance (ESR measurements reveal that interface charge transport in molecular semiconductors is properly described in terms of band transport and localization by charge traps.

  19. High-Efficiency Harmonically Terminated Diode and Transistor Rectifiers

    Energy Technology Data Exchange (ETDEWEB)

    Roberg, M; Reveyrand, T; Ramos, I; Falkenstein, EA; Popovic, Z

    2012-12-01

    This paper presents a theoretical analysis of harmonically terminated high-efficiency power rectifiers and experimental validation on a class-C single Schottky-diode rectifier and a class-F-1 GaN transistor rectifier. The theory is based on a Fourier analysis of current and voltage waveforms, which arise across the rectifying element when different harmonic terminations are presented at its terminals. An analogy to harmonically terminated power amplifier (PA) theory is discussed. From the analysis, one can obtain an optimal value for the dc load given the RF circuit design. An upper limit on rectifier efficiency is derived for each case as a function of the device on-resistance. Measured results from fundamental frequency source-pull measurement of a Schottky diode rectifier with short-circuit terminations at the second and third harmonics are presented. A maximal device rectification efficiency of 72.8% at 2.45 GHz matches the theoretical prediction. A 2.14-GHz GaN HEMT rectifier is designed based on a class-F-1 PA. The gate of the transistor is terminated in an optimal impedance for self-synchronous rectification. Measurements of conversion efficiency and output dc voltage for varying gate RF impedance, dc load, and gate bias are shown with varying input RF power at the drain. The rectifier demonstrates an efficiency of 85% for a 10-W input RF power at the transistor drain with a dc voltage of 30 V across a 98-Omega resistor.

  20. Imperfect two-dimensional topological insulator field-effect transistors

    Science.gov (United States)

    Vandenberghe, William G.; Fischetti, Massimo V.

    2017-01-01

    To overcome the challenge of using two-dimensional materials for nanoelectronic devices, we propose two-dimensional topological insulator field-effect transistors that switch based on the modulation of scattering. We model transistors made of two-dimensional topological insulator ribbons accounting for scattering with phonons and imperfections. In the on-state, the Fermi level lies in the bulk bandgap and the electrons travel ballistically through the topologically protected edge states even in the presence of imperfections. In the off-state the Fermi level moves into the bandgap and electrons suffer from severe back-scattering. An off-current more than two-orders below the on-current is demonstrated and a high on-current is maintained even in the presence of imperfections. At low drain-source bias, the output characteristics are like those of conventional field-effect transistors, at large drain-source bias negative differential resistance is revealed. Complementary n- and p-type devices can be made enabling high-performance and low-power electronic circuits using imperfect two-dimensional topological insulators. PMID:28106059

  1. Ferroelectric Field-Effect Transistor Differential Amplifier Circuit Analysis

    Science.gov (United States)

    Phillips, Thomas A.; MacLeod, Todd C.; Ho, Fat D.

    2008-01-01

    There has been considerable research investigating the Ferroelectric Field-Effect Transistor (FeFET) in memory circuits. However, very little research has been performed in applying the FeFET to analog circuits. This paper investigates the use of FeFETs in a common analog circuit, the differential amplifier. The two input Metal-Oxide-Semiconductor (MOS) transistors in a general MOS differential amplifier circuit are replaced with FeFETs. Resistors are used in place of the other three MOS transistors. The FeFET model used in the analysis has been previously reported and was based on experimental device data. Because of the FeFET hysteresis, the FeFET differential amplifier has four different operating modes depending on whether the FeFETs are positively or negatively polarized. The FeFET differential amplifier operation in the different modes was analyzed by calculating the amplifier voltage transfer and gain characteristics shown in figures 2 through 5. Comparisons were made between the FeFET differential amplifier and the standard MOS differential amplifier. Possible applications and benefits of the FeFET differential amplifier are discussed.

  2. An air gap moderates the performance of nanowire array transistors

    Science.gov (United States)

    Yang, Tong; Mehta, Jeremy S.; Mativetsky, Jeffrey M.

    2017-03-01

    Solution-processed nanowires are promising for low-cost and flexible electronics. When depositing nanowires from solution, due to stacking of the nanowires, an air gap exists between the substrate and much of the active material. Here, using confocal Raman spectroscopy, we quantify the thickness of the air gap in transistors comprising organic semiconductor nanowires. The average air gap thickness is found to be unexpectedly large, being at least three times larger than the nanowire diameter, leading to a significant impact on transistor performance. The air gap acts as an additional dielectric layer that reduces the accumulation of charge carriers due to a gate voltage. Conventional determination of the charge carrier mobility ignores the presence of an air gap, resulting in an overestimate of charge carrier accumulation and an underestimate of charge carrier mobility. It is shown that the larger the air gap, the larger the mobility correction (which can be greater than an order of magnitude) and the larger the degradation in on–off current ratio. These results demonstrate the importance of minimizing the air gap and of taking the air gap into consideration when analyzing the electrical performance of transistors consisting of stacked nanowires. This finding is applicable to all types of stacked one-dimensional materials including organic and inorganic nanowires, and carbon nanotubes.

  3. Sidewall spacer optimization for steep switching junctionless transistors

    Science.gov (United States)

    Gupta, Manish; Kranti, Abhinav

    2016-06-01

    In this work, we analyze the impact of a high permittivity (high-κ) sidewall spacer and gate dielectric on the occurrence of sub-60 mV/decade subthreshold swing (S-swing) in symmetrical junctionless (JL) double gate (DG) transistors. It is shown that steep S-swing values (≤10 mV/decade) can be achieved in JL devices with a combination of a high permittivity (high-κ) gate dielectric and a narrow low permittivity (low-κ) sidewall spacer. Implementation of a wider high-κ spacer will diminish the degree of impact ionization by the influence of the fringing component of the gate electric field, and will not be useful for steep off-to-on current transition. A wider spacer with low-κ and a narrow spacer with high-κ permittivity will be useful to limit the latching effect that can occur at lower temperatures (250 K). For high temperature operation, the decrease in the impact ionization rate can be compensated by designing a JL transistor with a thicker silicon film. The work demonstrates opportunities to enhance impact ionization at sub bandgap voltages, and proposes optimal guidelines for selecting a sidewall spacer to facilitate steep switching in JL transistors.

  4. TOPICAL REVIEW: Organic field-effect transistors using single crystals

    Science.gov (United States)

    Hasegawa, Tatsuo; Takeya, Jun

    2009-04-01

    Organic field-effect transistors using small-molecule organic single crystals are developed to investigate fundamental aspects of organic thin-film transistors that have been widely studied for possible future markets for 'plastic electronics'. In reviewing the physics and chemistry of single-crystal organic field-effect transistors (SC-OFETs), the nature of intrinsic charge dynamics is elucidated for the carriers induced at the single crystal surfaces of molecular semiconductors. Materials for SC-OFETs are first reviewed with descriptions of the fabrication methods and the field-effect characteristics. In particular, a benchmark carrier mobility of 20-40 cm2 Vs-1, achieved with thin platelets of rubrene single crystals, demonstrates the significance of the SC-OFETs and clarifies material limitations for organic devices. In the latter part of this review, we discuss the physics of microscopic charge transport by using SC-OFETs at metal/semiconductor contacts and along semiconductor/insulator interfaces. Most importantly, Hall effect and electron spin resonance (ESR) measurements reveal that interface charge transport in molecular semiconductors is properly described in terms of band transport and localization by charge traps.

  5. A tight-binding study of single-atom transistors.

    Science.gov (United States)

    Ryu, Hoon; Lee, Sunhee; Fuechsle, Martin; Miwa, Jill A; Mahapatra, Suddhasatta; Hollenberg, Lloyd C L; Simmons, Michelle Y; Klimeck, Gerhard

    2015-01-21

    A detailed theoretical study of the electronic and transport properties of a single atom transistor, where a single phosphorus atom is embedded within a single crystal transistor architecture, is presented. Using a recently reported deterministic single-atom transistor as a reference, the electronic structure of the device is represented atomistically with a tight-binding model, and the channel modulation is simulated self-consistently with a Thomas-Fermi method. The multi-scale modeling approach used allows confirmation of the charging energy of the one-electron donor charge state and explains how the electrostatic environments of the device electrodes affects the donor confinement potential and hence extent in gate voltage of the two-electron charge state. Importantly, whilst devices are relatively insensitive to dopant ordering in the highly doped leads, a ∼1% variation of the charging energy is observed when a dopant is moved just one lattice spacing within the device. The multi-scale modeling method presented here lays a strong foundation for the understanding of single-atom device structures: essential for both classical and quantum information processing.

  6. Unified description of potential profiles and electrical transport in unipolar and ambipolar organic field-effect transistors

    NARCIS (Netherlands)

    Smits, Edsger C. P.; Mathijssen, Simon G. J.; Colle, Michael; Mank, Arjan J. G.; Bobbert, Peter A.; Blom, Paul W. M.; de Boer, Bert; de Leeuw, Dago M.; Cölle, Michael

    2007-01-01

    Validation of models for charge transport in organic transistors is fundamentally important for their technological use. Usually current-voltage measurements are performed to investigate organic transistors. In situ scanning Kelvin probe microscopy measurements provide a powerful complementary techn

  7. The research of multilevel transistor inverter for converting energy of solar panels

    Science.gov (United States)

    Taissariyeva, K. N.; Issembergenov, N. T.

    2015-09-01

    This article considers multilevel transistor inverter for converting energy of solar panels into electroenergy. The output of multilevel transistor inverter produces the voltage of almost sinusoidal form. The primary objective of this inverter is to transform solar energy into electroenergy of industrial frequency. The analysis of received output curves of voltage for sinusoidality has been conducted.

  8. A method for the measurement of the turn-on condition in MOS transistors

    NARCIS (Netherlands)

    Wallinga, H.

    1971-01-01

    Metal-oxide-silicon (MOS) integrated circuits usually consist of MOS transistors and interconnections. Both, interconnections and MOS transistors are built up of diffused regions in the bulk substrate and conductive strips (metal or polycrystalline silicon) on top of the oxide. For proper electrical

  9. Imaging Gallium Nitride High Electron Mobility Transistors to Identify Point Defects

    Science.gov (United States)

    2014-03-01

    REPORT TYPE AND DATES COVERED Master’s Thesis 4. TITLE AND SUBTITLE IMAGING GALLIUM NITRIDE HIGH ELECTRON MOBILITY TRANSISTORS TO IDENTIFY...Identification of these trends will assist in the improvement of gallium nitride HEMT fabrication processes leading to the development of more...reliable devices. 14. SUBJECT TERMS Electron microscopy, Gallium Nitride (GaN), high electron mobility transistor (HEMT

  10. Organic Single-Crystal Light-Emitting Transistor Coupling with Optical Feedback Resonators

    NARCIS (Netherlands)

    Bisri, Satria Zulkarnaen; Sawabe, Kosuke; Imakawa, Masaki; Maruyama, Kenichi; Yamao, Takeshi; Hotta, Shu; Iwasa, Yoshihiro; Takenobu, Taishi

    2012-01-01

    Organic light-emitting transistors (OLETs) are of great research interest because they combine the advantage of the active channel of a transistor that can control the luminescence of an in-situ light-emitting diode in the same device. Here we report a novel single-crystal OLET (SCLET) that is coupl

  11. The dual role of multiple-transistor charge sharing collection in single-event transients

    Institute of Scientific and Technical Information of China (English)

    Guo Yang; Chen Jian-Jun; He Yi-Bai; Liang Bin; Liu Bi-Wei

    2013-01-01

    As technologies scale down in size,multiple-transistors being affected by a single ion has become a universal phenomenon,and some new effects are present in single event transients (SETs) due to the charge sharing collection of the adjacent multiple-transistors.In this paper,not only the off-state p-channel metal-oxide semiconductor field-effect transistor (PMOS FET),but also the on-state PMOS is struck by a heavy-ion in the two-transistor inverter chain,due to the charge sharing collection and the electrical interaction.The SET induced by striking the off-state PMOS is efficiently mitigated by the pulse quenching effect,but the SET induced by striking the on-state PMOS becomes dominant.It is indicated in this study that in the advanced technologies,the SET will no longer just be induced by an ion striking the off-state transistor,and the SET sensitive region will no longer just surround the off-state transistor either,as it is in the older technologies.We also discuss this issue in a three-transistor inverter in depth,and the study illustrates that the three-transistor inverter is still a better replacement for spacebome integrated circuit design in advanced technologies.

  12. 1/f Noise Characterization in CMOS Transistors in 0.13μm Technology

    DEFF Research Database (Denmark)

    Citakovic, J.; Stenberg, L J; Andreani, Pietro

    2006-01-01

    Low-frequency noise has been studied on a set of n- and p-channel CMOS transistors fabricated in a 0.13μm technology. Noise measurements have been performed on transistors with different gate lengths operating under wide bias conditions, ranging from weak to strong inversion. Noise origin has been...

  13. Electrolyte-gated organic field-effect transistor for selective reversible ion detection.

    Science.gov (United States)

    Schmoltner, Kerstin; Kofler, Johannes; Klug, Andreas; List-Kratochvil, Emil J W

    2013-12-17

    An ion-sensitive electrolyte-gated organic field-effect transistor for selective and reversible detection of sodium (Na(+) ) down to 10(-6) M is presented. The inherent low voltage - high current operation of these transistors in combination with a state-of-the-art ion-selective membrane proves to be a novel, versatile modular sensor platform.

  14. Fast turn-on of an NMOS ESD protection transistor: measurements and simulations

    NARCIS (Netherlands)

    Luchies, J.R.M.; Kort, de C.G.M.; Verweij, J.F.

    1995-01-01

    The transient turn-on of the parasitic bipolar transistor of an NMOS transistor was studied. The voltages appearing at internal nodes of protection and functional circuit after application of 350 ps rise-time pulses have been measured using electro-optic sampling. For very fast transients the trigge

  15. Interface Engineering for Precise Threshold Voltage Control in Multilayer-Channel Thin Film Transistors

    KAUST Repository

    Park, Jihoon

    2016-11-29

    Multilayer channel structure is used to effectively manipulate the threshold voltage of zinc oxide transistors without degrading its field-effect mobility. Transistors operating in enhancement mode with good mobility are fabricated by optimizing the structure of the multilayer channel. The optimization is attributed to the formation of additional channel and suppression of the diffusion of absorbed water molecules and oxygen vacancies.

  16. Highly stable carbon nanotube top-gate transistors with tunable threshold voltage

    NARCIS (Netherlands)

    Wang, H.; Cobb, B.; Breemen, A. van; Gelinck, G.H.; Bao, Z.

    2014-01-01

    Carbon-nanotube top-gate transistors with fluorinated dielectrics are presented. With PTrFE as the dielectric, the devices have absent or small hysteresis at different sweep rates and excellent bias-stress stability under ambient conditions. Ambipolar single-walled carbon nanotube (SWNT) transistors

  17. A New Design Technique of Reversible BCD Adder Based on NMOS With Pass Transistor Gates

    CERN Document Server

    Hossain, Md Sazzad; Rahman, Md Motiur; Hossain, A S M Delowar; Hasan, Md Minul

    2012-01-01

    In this paper, we have proposed a new design technique of BCD Adder using newly constructed reversible gates are based on NMOS with pass transistor gates, where the conventional reversible gates are based on CMOS with transmission gates. We also compare the proposed reversible gates with the conventional CMOS reversible gates which show that the required number of Transistors is significantly reduced.

  18. Dynamics of threshold voltage shifts in organic and amorphous silicon field-effect transistors

    NARCIS (Netherlands)

    Mathijssen, Simon G. J.; Colle, Michael; Gomes, Henrique; Smits, Edsger C. P.; de Boer, Bert; McCulloch, Iain; Bobbert, Peter A.; de Leeuw, Dago M.; Cölle, Michael

    2007-01-01

    The electrical instability of organic field-effect transistors is investigated. We observe that the threshold-voltage shift (see figure) shows a stretched-exponential time dependence under an applied gate bias. The activation energy of 0.6 eV is common for our and all other organic transistors repor

  19. Evaluation of temperature-enhanced gain degradation of verticle npn and lateral pnp bipolar transistors

    Energy Technology Data Exchange (ETDEWEB)

    Witczak, S.C.; Lacoe, R.C. [Aerospace Corp., Los Angeles, CA (United States). Electronics Technology Center; Galloway, K.F. [Vanderbilt Univ., Nashville, TN (United States). Dept. of Electrical and Computer Engineering] [and others

    1997-03-01

    The effect of dose rate on radiation-induced gain degradation is compared for verticle npn and lateral pnp bipolar transistors. High dose rate irradiations at elevated temperatures are more effective at simulating low dose rate degradation in the lateral pnp transistors.

  20. Electrical Characteristics of Copper Phthalocyanine Thin-Film Transistors with Polyamide-6/Polytetrafluoroethylene Gate Insulator

    Institute of Scientific and Technical Information of China (English)

    YU Shun-Yang; XU Shi-Ai; MA Dong-Ge

    2007-01-01

    Polyamide-6(PA 6)/polytetrafluoroethylene is studied as a potential gate dielectric for flexible organic thin film transistors.The salne method used for the formation of organic semiconductor and gate dielectric films greatly simplifies the fabrication process of devices.The fabricated transistors show good electrical characteristics.Ambipolar behaviour is observed even when the device is operated in air.

  1. E-Learning System for Design and Construction of Amplifier Using Transistors

    Science.gov (United States)

    Takemura, Atsushi

    2014-01-01

    This paper proposes a novel e-Learning system for the comprehensive understanding of electronic circuits with transistors. The proposed e-Learning system allows users to learn a wide range of topics, encompassing circuit theories, design, construction, and measurement. Given the fact that the amplifiers with transistors are an integral part of…

  2. Transistorized Marx bank pulse circuit provides voltage multiplication with nanosecond rise-time

    Science.gov (United States)

    Jung, E. A.; Lewis, R. N.

    1968-01-01

    Base-triggered avalanche transistor circuit used in a Marx bank pulser configuration provides voltage multiplication with nanosecond rise-time. The avalanche-mode transistors replace conventional spark gaps in the Marx bank. The delay time from an input signal to the output signal to the output is typically 6 nanoseconds.

  3. Graphene-based lateral heterostructure transistors exhibit better intrinsic performance than graphene-based vertical transistors as post-CMOS devices

    Science.gov (United States)

    Logoteta, Demetrio; Fiori, Gianluca; Iannaccone, Giuseppe

    2014-10-01

    We investigate the intrinsic performance of vertical and lateral graphene-based heterostructure field-effect transistors, currently considered the most promising options to exploit graphene properties in post-CMOS electronics. We focus on three recently proposed graphene-based transistors, that in experiments have exhibited large current modulation. Our analysis is based on device simulations including the self-consistent solution of the electrostatic and transport equations within the Non-Equilibrium Green's Function formalism. We show that the lateral heterostructure transistor has the potential to outperform CMOS technology and to meet the requirements of the International Technology Roadmap for Semiconductors for the next generation of semiconductor integrated circuits. On the other hand, we find that vertical heterostructure transistors miss these performance targets by several orders of magnitude, both in terms of switching frequency and delay time, due to large intrinsic capacitances, and unavoidable current/capacitance tradeoffs.

  4. Specifics of Pulsed Arc Welding Power Supply Performance Based On A Transistor Switch

    Science.gov (United States)

    Krampit, N. Yu; Kust, T. S.; Krampit, M. A.

    2016-08-01

    Specifics of designing a pulsed arc welding power supply device are presented in the paper. Electronic components for managing large current was analyzed. Strengths and shortcomings of power supply circuits based on thyristor, bipolar transistor and MOSFET are outlined. As a base unit for pulsed arc welding was chosen MOSFET transistor, which is easy to manage. Measures to protect a transistor are given. As for the transistor control device is a microcontroller Arduino which has a low cost and adequate performance of the work. Bead transfer principle is to change the voltage on the arc in the formation of beads on the wire end. Microcontroller controls transistor when the arc voltage reaches the threshold voltage. Thus there is a separation and transfer of beads without splashing. Control strategies tested on a real device and presented. The error in the operation of the device is less than 25 us, it can be used controlling drop transfer at high frequencies (up to 1300 Hz).

  5. Low-Voltage, Low-Power, Organic Light-Emitting Transistors for Active Matrix Displays

    Science.gov (United States)

    McCarthy, M. A.; Liu, B.; Donoghue, E. P.; Kravchenko, I.; Kim, D. Y.; So, F.; Rinzler, A. G.

    2011-04-01

    Intrinsic nonuniformity in the polycrystalline-silicon backplane transistors of active matrix organic light-emitting diode displays severely limits display size. Organic semiconductors might provide an alternative, but their mobility remains too low to be useful in the conventional thin-film transistor design. Here we demonstrate an organic channel light-emitting transistor operating at low voltage, with low power dissipation, and high aperture ratio, in the three primary colors. The high level of performance is enabled by a single-wall carbon nanotube network source electrode that permits integration of the drive transistor and the light emitter into an efficient single stacked device. The performance demonstrated is comparable to that of polycrystalline-silicon backplane transistor-driven display pixels.

  6. Studying the operation characteristics and structure of vertical channel copper-phthalocyanine organic semiconductor transistor

    Institute of Scientific and Technical Information of China (English)

    ZHU Min; SONG Ming-xin; GUI Tai-long; WANG Xuan; YIN Jing-hua; WANG Dong-xing; ZHAO Hong

    2005-01-01

    The creation of Au/CuPc/Al/CuPc/structure is a perpendicular type electricity found in the channel of organic static induction transistor. In the following we analyze transistor operation characteristics and machine structural relation. The results express that the transistor drives the voltage low and has no-saturation currentvoltage characteristics. Its operation characteristics are dependant on gate bias voltage and the construction of the aluminum electrode.The vertical channel of organic static induction transistor (OSIT) , with structure of Au/CuPc/Al/CuPc/Cu, has been determined. According to the test results, the relation of its operation characteristics and device structure was analyzed. The results show that this transistor has a low driving voltage and unsaturation Ⅰ-Ⅴ characteristics. Its operation characteristics are dependant on gate bias voltage and the structure of the aluminum electrode.

  7. A semi-floating gate transistor for low-voltage ultrafast memory and sensing operation.

    Science.gov (United States)

    Wang, Peng-Fei; Lin, Xi; Liu, Lei; Sun, Qing-Qing; Zhou, Peng; Liu, Xiao-Yong; Liu, Wei; Gong, Yi; Zhang, David Wei

    2013-08-09

    As the semiconductor devices of integrated circuits approach the physical limitations of scaling, alternative transistor and memory designs are needed to achieve improvements in speed, density, and power consumption. We report on a transistor that uses an embedded tunneling field-effect transistor for charging and discharging the semi-floating gate. This transistor operates at low voltages (≤2.0 volts), with a large threshold voltage window of 3.1 volts, and can achieve ultra-high-speed writing operations (on time scales of ~1 nanosecond). A linear dependence of drain current on light intensity was observed when the transistor was exposed to light, so possible applications include image sensing with high density and performance.

  8. Total dose radiation effects on hardened SOI bipolar transistors using the NPS LINAC

    Science.gov (United States)

    Brittain, Donald R., Jr.

    1995-03-01

    Silicon-on-insulator bipolar transistors fabricated using the Harris UHF-1 process, were irradiated at room temperature with 30 and 60 MeV electron beams. Some of the transistors on each die were configured and biased as a simple operational amplifier (opamp), one was placed in a common emitter type circuit and the remaining were biased to measure transistor parameter degradation. The purpose of this setup was to observe the total dose effects of the transistor and of an opamp on the same die in order to derive a more accurate model of an opamp under total dose conditions. This investigation was successful in conducting in-situ measurements of opamp gain and 3dB frequency while also measuring the current gain of similar transistors on the same die.

  9. High-speed, high-voltage pulse generation using avalanche transistor

    Science.gov (United States)

    Yong-sheng, Gou; Bai-yu, Liu; Yong-lin, Bai; Jun-jun, Qin; Xiao-hong, Bai; Bo, Wang; Bing-li, Zhu; Chuan-dong, Sun

    2016-05-01

    In this work, the conduction mechanism of avalanche transistors was demonstrated and the operation condition for generating high-speed pulse using avalanche transistors was illustrated. Based on the above analysis, a high-speed and high-voltage pulse (HHP) generating circuit using avalanche transistors was designed, and its working principle and process were studied. To improve the speed of the output pulse, an approach of reducing the rise time of the leading edge is proposed. Methods for selecting avalanche transistor and reducing the parasitic inductance and capacitance of printed circuit board (PCB) were demonstrated. With these instructions, a PCB with a tapered transmission line was carefully designed and manufactured. Output pulse with amplitude of 2 kV and rise time of about 200 ps was realized with this PCB mounted with avalanche transistors FMMT417, indicating the effectiveness of the HHP generating circuit design.

  10. Parametrization of the radiation induced leakage current increase of NMOS transistors

    CERN Document Server

    Backhaus, Malte

    2016-01-01

    The increase of the leakage current of NMOS transistors during exposure to ionizing radiation is known and well studied. Radiation hardness by design techniques have been developed to mitigate this effect and have been successfully used. More recent developments in smaller feature size technologies do not make use of these techniques due to their drawbacks in terms of logic density and requirement of dedicated libraries. During operation the resulting increase of the supply current is a serious challenge and needs to be considered during the system design. A simple parametrization of the leakage current of NMOS transistors as a function of total ionizing dose is presented. The parametrization uses a transistor transfer characteristics of the parasitic transistor along the shallow trench isolation to describe the leakage current of the nominal transistor. Together with a parametrization of the number of positive charges trapped in the silicon dioxide and number of activated interface traps in the silicon to si...

  11. Fabrication de transistors monoelectroniques pour la detection de charge

    Science.gov (United States)

    Richard, Jean-Philippe

    Le transistor monoelectro'nique (SET) est un candidat que l'on croyait avoir la capacite de remplacer le transistor des circuits integres actuel (MOSFET). Pour des raisons de faible gain en voltage, d'impedance de sortie elevee et de sensibilite aux fluctuations de charges, il est considere aujourd'hui qu'un hybride tirant profit des deux technologies est plus avantageux. En exploitant sa lacune d'etre sensible aux variations de charge, le SET est davantage utilise dans des applications ou la detection de charge s'avere indispensable, notamment dans les domaines de la bio-detection et de l'informatique quantique. Ce memoire presente une etude du transistor monoelectronique utilise en tant que detecteur de charge. La methode de fabrication est basee sur le procede nanodamascene developpe par Dubuc et al. [11] permettant au transistor monoelectronique de fonctionner a temperature ambiante. La temperature d'operation etant intimement liee a la geometrie du SET, la cle du procede nanodamascene reside dans le polissage chimico-mecanique (CMP) permettant de reduire l'epaisseur des SET jusqu'a des valeurs de quelques nanametres. Dans ce projet de maitrise, nous avons cependant opte pour que le SET soit opere a temperature cryogenique. Une faible temperature d'operation permet le relachement des contraintes de dimensions des dispositifs. En considerant les variations de procedes normales pouvant survenir lors de la fabrication, la temperature d'operation maximale calculee en conception s'etend de 27 K a 90 K, soit une energie de charge de 78 meV a 23 meV. Le gain du detecteur de charge etant dependant de la distance de couplage, les resultats de simulations demontrent que cette distance doit etre de 200 nm pour que la detection de charge soit optimale. Les designs concus sont ensuite fabriques sur substrat d'oxyde de silicium. Les resultats de fabrication de SET temoignent de la robustesse du procede nanodamascene. En effet, les dimensions atteintes experimentalement s

  12. Simulation of 50-nm Gate Graphene Nanoribbon Transistors

    Directory of Open Access Journals (Sweden)

    Cedric Nanmeni Bondja

    2016-01-01

    Full Text Available An approach to simulate the steady-state and small-signal behavior of GNR MOSFETs (graphene nanoribbon metal-semiconductor-oxide field-effect transistor is presented. GNR material parameters and a method to account for the density of states of one-dimensional systems like GNRs are implemented in a commercial device simulator. This modified tool is used to calculate the current-voltage characteristics as well the cutoff frequency fT and the maximum frequency of oscillation fmax of GNR MOSFETs. Exemplarily, we consider 50-nm gate GNR MOSFETs with N = 7 armchair GNR channels and examine two transistor configurations. The first configuration is a simplified MOSFET structure with a single GNR channel as usually studied by other groups. Furthermore, and for the first time in the literature, we study in detail a transistor structure with multiple parallel GNR channels and interribbon gates. It is shown that the calculated fT of GNR MOSFETs is significantly lower than that of GFETs (FET with gapless large-area graphene channel with comparable gate length due to the mobility degradation in GNRs. On the other hand, GNR MOSFETs show much higher fmax compared to experimental GFETs due the semiconducting nature of the GNR channels and the resulting better saturation of the drain current. Finally, it is shown that the gate control in FETs with multiple parallel GNR channels is improved while the cutoff frequency is degraded compared to single-channel GNR MOSFETs due to parasitic capacitances of the interribbon gates.

  13. Dielectric influence on IV curve of graphene field effect transistor

    Science.gov (United States)

    Shostachenko, Stanislav A.; Zakharchenko, Roman V.; Zebrev, Gennady I.; Stanishevskiy, Yaroslav M.; Kargin, Nikolay I.

    2016-12-01

    In this article, we have studied the influence of Si3N4 and SiO2 thin film gate dielectrics on the current-voltage characteristics of the graphene-based transistor. The test structure of graphene transistor was fabricated with the top and back gate. Graphene has been produced by chemical vapor deposition, and then transferred to the silicon dioxide on a silicon wafer. The channel of the transistor has been formed by etching in oxygen plasma through a photolithographic mask. Metals electrodes of the drain, source, and gate were deposited by resistive evaporation in a vacuum. It was used titanium / aluminum with a thickness of 50/200 nm. In the case of the back gate, silicon dioxide was used, obtained by thermal oxidation of the silicon substrate. For top gate was used silicon nitride deposited by plasma chemical deposition. It was demonstrated that field effect is more pronounced for the case of SiO2 back gate compare to the Si3N4 top gate. For the SiO2 back gate we have observed that the source- drain current decreases, from 2 mA to 3 mA, with increasing the gate voltage, from 0 to 40 V, at constant source-drain voltage, 2 V. In case of Si3N4 top gate the modulation of source-drain current was not significant for the comparable electric field strength. Based on the value of gate voltage for current minima in transfer function the poor quality of Si3N4 -graphene interface is concluded.

  14. Optimisation of add-on NPN Transistor for a CMOS Process

    Science.gov (United States)

    Aurola, Artto; Ronkainen, Hannu; Mellin, Joni

    2004-01-01

    The objective of this research was to add an npn-bipolar transistor for a CMOS process. This was to be done with minimal additional process steps and without changing any existing CMOS parameters. The minimum line width of the process was 1.2µm, the wafers were p-type and 100mm in diameter and no epitaxial or polysilicon layers were used. To minimise the additional process steps a triple diffused transistor was selected as the basis of the research. The emitter was formed from a diffusion contacting NMOSFET source and drain to aluminium. As collector diffusion two approaches were investigated the pnpbipolar transistors isolation nwell and the PMOSFET n-well. The only additional step to the CMOS process due to the npn-transistor fabrication resulted from the formation of base diffusion. The specifications for the npn-transistor were 80 for the current gain, 100V for the early voltage and 60MHz for the transition frequency at 1µA collector current. Four different transistor structures were investigated two octagonal transistors having either emitter or base in the centre and two minimum area rectangular transistors having either base or emitter in the middle. The octagonal transistor having the emitter in the centre was chosen as the basis of simulations. It was first simulated with a device simulator. Next combined process and device simulations were done. Based on simulation results different processes were tested on wafers. Only the octagonal transistor having the emitter in the middle satisfied the specifications when a pnp isolation n-well was used as a collector.

  15. Impact of series resistance on the operation of junctionless transistors

    Science.gov (United States)

    Jeon, Dae-Young; Park, So Jeong; Mouis, Mireille; Barraud, Sylvain; Kim, Gyu-Tae; Ghibaudo, Gérard

    2017-03-01

    Transconductance (gm) and its derivative (dgm/dVg) of junctionless transistors (JLTs), considered as a possible candidate for future CMOS technology, show their unique operation properties such as bulk neutral and surface accumulation conduction. However, source/drain series resistance (Rsd) causes significant degradation of intrinsic gm and dgm/dVg behavior in JLTs. In this letter, the Rsd effects on the operation of JLTs were investigated in detail and also verified with analytical modeling equations. This work provides helpful information for a better understanding of the operation mechanism of JLTs with de-embedded Rsd effects.

  16. Dynamics of the Inductive Single-Electron Transistor

    OpenAIRE

    Sillanpää, Mika A.; Roschier, Leif; Hakonen, Pertti J.

    2004-01-01

    Using a classical equation of motion, dynamics of the phase is analyzed in the Inductive Single-Electron Transistor (L-SET) which is a promising new system suitable for quantum measurement with ultimate sensitivity and low back-action. In a regime of nonlinear dynamics, a shift of the oscillator resonant frequency is discovered which has a direct analogy to the switching of a dc-biased Josephson junction into voltage state. Results are reviewed for the predicted charge sensitivity, and it is ...

  17. Electrolyte-gated organic synapse transistor interfaced with neurons

    CERN Document Server

    Desbief, Simon; Casalini, Stefano; Guerin, David; Tortorella, Silvia; Barbalinardo, Marianna; Kyndiah, Adrica; Murgia, Mauro; Cramer, Tobias; Biscarini, Fabio; Vuillaume, Dominique

    2016-01-01

    We demonstrate an electrolyte-gated hybrid nanoparticle/organic synapstor (synapse-transistor, termed EGOS) that exhibits short-term plasticity as biological synapses. The response of EGOS makes it suitable to be interfaced with neurons: short-term plasticity is observed at spike voltage as low as 50 mV (in a par with the amplitude of action potential in neurons) and with a typical response time in the range of tens milliseconds. Human neuroblastoma stem cells are adhered and differentiated into neurons on top of EGOS. We observe that the presence of the cells does not alter short-term plasticity of the device.

  18. Top Contact Pentacene Organic Thin Film Field Effect Transistors

    Institute of Scientific and Technical Information of China (English)

    ZHANG Su-mei; SHI Jia-wei; SHI Ying-xue; GUO Shu-xu; LIU Ming-da; MA Dong-ge; CHEN Jiang-shan

    2004-01-01

    Using pentacene as an active material, the organic thin film transistors were fabricated on Si3N4/p-Si substrates by using RF-magnetron sputtered amorphous aluminium as the gate electrode contact, and using highly doped Si as the gate electrode and substrate with plasma-enhanced chemical vapor deposited (PECVD) silicon nitride as gate dielectric. Pentacene thin films were deposited by thermal evaporation on dielectrics as the active layer, then RF-magnetron sputtered amorphous aluminium was used as the source and drain contacts. Measurement results show that field respectively, and on-off current ratio is nearly 1×103.

  19. Organic single-crystal field-effect transistors

    Directory of Open Access Journals (Sweden)

    Colin Reese

    2007-03-01

    Full Text Available Organic molecular crystals hold great promise for the rational development of organic semiconductor materials. Their long-range order not only reveals the performance limits of organic materials, but also provides unique insight into their intrinsic transport properties. The field-effect transistor (FET has served as a versatile tool for electrical characterization of many facets of their performance. In the last few years, breakthroughs in single-crystal FET fabrication techniques have enabled the realization of field-effect mobilities far surpassing amorphous Si, observation of the Hall effect in an organic material, and the study of transport as an explicit function of molecular packing and chemical structure.

  20. Neuro-Space Mapping for Modeling Heterojunction Bipolar Transistor

    Institute of Scientific and Technical Information of China (English)

    Yan Shuxia; Cheng Qianfu; Wu Haifeng; Zhang Qijun

    2015-01-01

    A neuro-space mapping(Neuro-SM) for modeling heterojunction bipolar transistor(HBT) is presented, which can automatically modify the input signals of the given model by neural network. The novel Neuro-SM formu-lations for DC and small-signal simulation are proposed to obtain the mapping network. Simulation results show that the errors between Neuro-SM models and the accurate data are less than 1%, demonstrating that the accurcy of the proposed method is higher than those of the existing models.

  1. Metal-nanoparticle single-electron transistors fabricated using electromigration

    DEFF Research Database (Denmark)

    Bolotin, K I; Kuemmeth, Ferdinand; Pasupathy, A N;

    2004-01-01

    on top of an oxidized aluminum gate. We achieve sufficient gate coupling to access more than ten charge states of individual gold nanoparticles (5–15 nm in diameter). The devices are sufficiently stable to permit spectroscopic studies of the electron-in-a-box level spectra within the nanoparticle as its......We have fabricated single-electron transistors from individual metal nanoparticles using a geometry that provides improved coupling between the particle and the gate electrode. This is accomplished by incorporating a nanoparticle into a gap created between two electrodes using electromigration, all...

  2. Low Temperature Photoluminescence (PL) from High Electron Mobility Transistors (HEMTs)

    Science.gov (United States)

    2015-03-01

    aluminum gallium nitride (AlGaN)/gallium nitride ( GaN ) and indium aluminum nitride (InAlN)/ GaN HEMT structures. These samples were cooled to 13 °K...Alabama (UA) grew aluminum gallium nitride (AlGaN)/gallium nitride ( GaN ) and indium aluminum nitride (InAlN)/ GaN High Electron Mobility Transistor ( HEMT ...silicon, so making HEMT devices out of GaN should provide electronics that can perform better than silicon under extreme conditions. It is then

  3. Graded index SCH transistor laser: Analysis of various confinement structures

    CERN Document Server

    Hosseini, Mohammad; Taghavi, Iman

    2016-01-01

    New configuration of confinement structure is utilized to improve optoelectronic performances, including threshold current, AC current gain as well as optical bandwidth and optical output power of single quantum well transistor laser. Considering the drift component in addition to the diffusion term in electron current density, a new continuity equation is developed to analyze the proposed structures. Physical parameters including, electron mobility, recombination lifetime, optical confinement factor, electron capture time and photon lifetime is calculated for new structures. Based on solving continuity equation in separate confinement heterostructures, threshold current reduces 67% and optical output power increases 37%.

  4. Carbon Nanotube Field-Effect Transistor for DNA Sensing

    Science.gov (United States)

    Xuan, Chu T.; Thuy, Nguyen T.; Luyen, Tran T.; Huyen, Tran T. T.; Tuan, Mai A.

    2017-01-01

    A field-effect transistor (FET) using carbon nanotubes (CNTs) as the conducting channel (CNTFET) has been developed, designed such that the CNT conducting channel (15 μm long, 700 μm wide) is directly exposed to medium containing target deoxyribonucleic acid (DNA). The CNTFET operates at high ON-current of 1.91 μA, ON/OFF-current ratio of 1.2 × 105, conductance of 4.3 μS, and leakage current of 16.4 pA. We present initial trials showing the response of the CNTFET to injection of target DNA into aqueous medium.

  5. Intrinsic magnetic refrigeration of a single electron transistor

    Energy Technology Data Exchange (ETDEWEB)

    Ciccarelli, C.; Ferguson, A. J. [Cavendish Laboratory, University of Cambridge, Cambridge CB3 0HE (United Kingdom); Campion, R. P.; Gallagher, B. L. [School of Physics and Astronomy, University of Nottingham, Nottingham NG7 2RD (United Kingdom)

    2016-02-01

    In this work, we show that aluminium doped with low concentrations of magnetic impurities can be used to fabricate quantum devices with intrinsic cooling capabilities. We fabricate single electron transistors made of aluminium doped with 2% Mn by using a standard multi angle evaporation technique and show that the quantity of metal used to fabricate the devices generates enough cooling power to achieve a drop of 160 mK in the electron temperature at the base temperature of our cryostat (300 mK). The cooling mechanism is based on the magneto-caloric effect from the diluted Mn moments.

  6. The design and fabrication on gate type resonant tunneling transistor

    Institute of Scientific and Technical Information of China (English)

    2008-01-01

    In light of fabricating resonant tunneling diode(RTD),in this paper a GaAs-based resonant tunneling transistor with gate structure(GRTT)has been designed and fabricated successfully.A systematic depiction centers on the designs of material structure,device structure,photo lithography mask,fabrication of device and the measurement and analysis of parameters.The fabricated GRTT has a maximum PVCR of 46 and a maximum transconductance of 8 mS.The work lays the foundation for further improvement on the performance and parameters of RTT.

  7. Evolutionary Multiobjective Design Targeting a Field Programmable Transistor Array

    Science.gov (United States)

    Aguirre, Arturo Hernandez; Zebulum, Ricardo S.; Coello, Carlos Coello

    2004-01-01

    This paper introduces the ISPAES algorithm for circuit design targeting a Field Programmable Transistor Array (FPTA). The use of evolutionary algorithms is common in circuit design problems, where a single fitness function drives the evolution process. Frequently, the design problem is subject to several goals or operating constraints, thus, designing a suitable fitness function catching all requirements becomes an issue. Such a problem is amenable for multi-objective optimization, however, evolutionary algorithms lack an inherent mechanism for constraint handling. This paper introduces ISPAES, an evolutionary optimization algorithm enhanced with a constraint handling technique. Several design problems targeting a FPTA show the potential of our approach.

  8. Room-temperature single-electron transistors using alkanedithiols

    Energy Technology Data Exchange (ETDEWEB)

    Luo Kang; Chae, D-H; Yao Zhen [Department of Physics, University of Texas at Austin, Austin, TX 78712 (United States); Center for Nano- and Molecular Science and Technology, University of Texas at Austin, Austin, TX 78712 (United States); Texas Materials Institute, University of Texas at Austin, Austin, TX 78712 (United States)

    2007-11-21

    We have fabricated single-electron transistors by alkanedithiol molecular self-assembly. The devices consist of spontaneously formed ultrasmall Au nanoparticles linked by alkanedithiols to nanometer-spaced Au electrodes created by electromigration. The devices reproducibly exhibit addition energies of a few hundred meV, which enables the observation of single-electron tunneling at room temperature. At low temperatures, tunneling through discrete energy levels in the Au nanoparticles is observed, which is accompanied by the excitations of molecular vibrations at large bias voltage.

  9. Electronic transport in benzodifuran single-molecule transistors

    Science.gov (United States)

    Xiang, An; Li, Hui; Chen, Songjie; Liu, Shi-Xia; Decurtins, Silvio; Bai, Meilin; Hou, Shimin; Liao, Jianhui

    2015-04-01

    Benzodifuran (BDF) single-molecule transistors have been fabricated in electromigration break junctions for electronic measurements. The inelastic electron tunneling spectrum validates that the BDF molecule is the pathway of charge transport. The gating effect is analyzed in the framework of a single-level tunneling model combined with transition voltage spectroscopy (TVS). The analysis reveals that the highest occupied molecular orbital (HOMO) of the thiol-terminated BDF molecule dominates the charge transport through Au-BDF-Au junctions. Moreover, the energy shift of the HOMO caused by the gate voltage is the main reason for conductance modulation. In contrast, the electronic coupling between the BDF molecule and the gold electrodes, which significantly affects the low-bias junction conductance, is only influenced slightly by the applied gate voltage. These findings will help in the design of future molecular electronic devices.Benzodifuran (BDF) single-molecule transistors have been fabricated in electromigration break junctions for electronic measurements. The inelastic electron tunneling spectrum validates that the BDF molecule is the pathway of charge transport. The gating effect is analyzed in the framework of a single-level tunneling model combined with transition voltage spectroscopy (TVS). The analysis reveals that the highest occupied molecular orbital (HOMO) of the thiol-terminated BDF molecule dominates the charge transport through Au-BDF-Au junctions. Moreover, the energy shift of the HOMO caused by the gate voltage is the main reason for conductance modulation. In contrast, the electronic coupling between the BDF molecule and the gold electrodes, which significantly affects the low-bias junction conductance, is only influenced slightly by the applied gate voltage. These findings will help in the design of future molecular electronic devices. Electronic supplementary information (ESI) available: The fabrication procedure for BDF single

  10. Pentacene Organic-Thin-Film Field-Effect Transistors

    Institute of Scientific and Technical Information of China (English)

    张素梅; 石家纬; 刘明大; 李靖; 郭树旭; 王伟

    2004-01-01

    We have fabricated organic thin-film transistors using the small-molecule polycyclic aromatic hydrocarbon pentacene as an active material. Devices were fabricated on glass substrates by using rf-magnetron sputtered amorphous aluminium as the gate electrode, and gelatinized polyimide as the gate dielectric with physical vapour grown pentacene thin films pasted on it as the active layer, then using rf-magnetron sputtered amorphous aluminium as the source and drain contacts. Field effect mobility and threshold voltage is 0.092 cm2 /Vs and 14.5 V,respectively. On-off current ratio is nearly 103.

  11. Contact engineering in organic field-effect transistors

    Directory of Open Access Journals (Sweden)

    Chuan Liu

    2015-03-01

    Full Text Available Organic field-effect transistors (OFETs are promising for numerous potential applications but suffer from poor charge injection, such that their performance is severely limited. Recent efforts in lowering contact resistance have led to significantly improved field-effect mobility of OFETs, up to 100 times higher, as the results of careful choice of contact materials and/or chemical treatment of contact electrodes. Here we review the innovative developments of contact engineering and focus on the mechanisms behind them. Further improvement toward Ohmic contact can be expected along with the rapid advance in material research, which will also benefit other organic and electronic devices.

  12. Orientation selectivity with organic photodetectors and an organic electrochemical transistor

    Science.gov (United States)

    Gkoupidenis, Paschalis; Rezaei-Mazinani, Shahab; Proctor, Christopher M.; Ismailova, Esma; Malliaras, George G.

    2016-11-01

    Neuroinspired device architectures offer the potential of higher order functionalities in information processing beyond their traditional microelectronic counterparts. Here we demonstrate a neuromorphic function of orientation selectivity, which is inspired from the visual system, with a combination of organic photodetectors and a multi-gated organic electrochemical transistor based on poly(3,4ethylenedioxythiophene):poly(styrene sulfonate) (PEDOT:PSS). The device platform responds preferably to different orientations of light bars, a behaviour that resembles orientation selectivity of visual cortex cells. These results pave the way for organic-based neuromorphic devices with spatially correlated functionalities and potential applications in the area of organic bioelectronics.

  13. An Analytical Universal Model for Symmetric Double Gate Junctionless Transistors

    Directory of Open Access Journals (Sweden)

    N. Bora

    2016-06-01

    Full Text Available An analytical surface potential based universal model for the drain current voltage characteristics of Symmetric Double gate (DG junctionless field effect transistors is presented. This novel universal model is valid for all operating regions from depletion to inversion regions of operations. The primary conduction mechanism is governed by the bulk current where the channel becomes fully depleted in turning it off. This model has been validated by using TCAD device simulating software. The comparison shows high accuracy of the proposed model.

  14. High-transconductance graphene solution-gated field effect transistors

    Science.gov (United States)

    Hess, L. H.; Hauf, M. V.; Seifert, M.; Speck, F.; Seyller, T.; Stutzmann, M.; Sharp, I. D.; Garrido, J. A.

    2011-07-01

    In this work, we report on the electronic properties of solution-gated field effect transistors (SGFETs) fabricated using large-area graphene. Devices prepared both with epitaxially grown graphene on SiC as well as with chemical vapor deposition grown graphene on Cu exhibit high transconductances, which are a consequence of the high mobility of charge carriers in graphene and the large capacitance at the graphene/water interface. The performance of graphene SGFETs, in terms of gate sensitivity, is compared to other SGFET technologies and found to be clearly superior, confirming the potential of graphene SGFETs for sensing applications in electrolytic environments.

  15. Analysis of radiation-damaged and annealed gallium arsenide and indium phosphide solar cells using deep-level transient spectroscopy techniques. Master's thesis

    Energy Technology Data Exchange (ETDEWEB)

    Pinzon, D.

    1991-03-01

    Degradation of solar cell performance from radiation damage was found to be reversed through annealing processes. The mechanisms behind the degradation and recovery is based on deep-level traps, or defects, in the lattice structure of the solar cell. Through a process known as Deep Level Transient Spectroscopy (DLTS), a correlation can be made between damage/recovery and trap energy level/concentration of the cell. Gallium Arsenide (GaAs) and Indium Phosphide (InP) solar cells were subjected to 1 MeV electron irradiation by a Dynamitron linear acceleration at two fluence levels of 1E1r and 1E15 electrons/cm sq. The process of annealing included thermal annealing at 90 c with forward bias current and thermal annealing alone for (GaAs). After each cycle, DLTS measurements were taken to determine the energy level of the traps and their concentration. Multiple cycles of irradiation, annealing and DLTS were performed to observe the correlation between degradation and recovery to trap energy level and concentration. The results show that the lower energy level traps are associated with the recovery of the cells while the higher level traps are associated with the overall permanent degradation of the cells.

  16. The effect of gallium arsenide aluminum laser therapy in the management of cervical myofascial pain syndrome: a double blind, placebo-controlled study.

    Science.gov (United States)

    Dundar, U; Evcik, D; Samli, F; Pusak, H; Kavuncu, V

    2007-06-01

    The efficacy of low-level laser therapy (LLLT) in myofascial pain syndrome (MPS) seems controversial. A prospective, double-blind, randomized controlled trial was conducted in patients with chronic MPS in the neck to evaluate the effects of low-level 830-nm gallium arsenide aluminum (Ga-As-Al) laser therapy. The study group consisted of 64 MPS patients. The patients were randomly assigned into two groups. In group 1 (n = 32), Ga-As-Al laser treatment was applied over three trigger points bilaterally for 2 min over each point once a day for 15 days during a period of 3 weeks. In group 2 (n = 32), the same treatment protocol was given, but the laser instrument was switched off during applications. All patients in both groups performed daily isometric exercise and stretching exercises for cervical region. Parameters were measured at baseline and after 4 weeks. All patients were evaluated with respect to pain (at rest, movement, and night) and assessed by visual analog scale, measurement of active range of motion using an inclinometer and a goniometer, and the neck disability index. In both groups, statistically significant improvements were detected in all outcome measures compared with baseline (p 0.05). In conclusion, although the laser therapy has no superiority over placebo groups in this study, we cannot exclude the possibility of effectivity with another treatment regimen including different laser wavelengths and dosages (different intensity and density and/or treatment interval).

  17. The Bipolar Field-Effect Transistor: ⅩⅢ. Physical Realizations of the Transistor and Circuits (One-Two-MOS-Gates on Thin-Thick Pure-Impure Base)

    Institute of Scientific and Technical Information of China (English)

    薩支唐; 揭斌斌

    2009-01-01

    This paper reports the physical realization of the Bipolar Field-Effect Transistor (BiFET) and its one-transistor basic building block circuits. Examples are given for the one and two MOS gates on thin and thick, pure and impure base, with electron and hole contacts, and the corresponding theoretical current-voltage characteristics previously computed by us, without generation-recombination-trapping-tunneling of electrons and holes. These ex-amples include the one-MOS-gate on semi-infinite thick impure base transistor (the bulk transistor) and the impure-thin-base Silicon-on-Insulator (SOI) transistor and the two-MOS-gates on thin base transistors (the FinFET and the Thin Film Transistor TFT). Figures are given with the cross-section views containing the electron and hole concen-tration and current density distributions and trajectories and the corresponding DC current-voltage characteristics.

  18. Cylindrical Field Effect Transistor: A Full Volume Inversion Device

    KAUST Repository

    Fahad, Hossain M.

    2010-12-01

    The increasing demand for high performance as well as low standby power devices has been the main reason for the aggressive scaling of conventional CMOS transistors. Current devices are at the 32nm technology node. However, due to physical limitations as well as increase in short-channel effects, leakage, power dissipation, this scaling trend cannot continue and will eventually hit a barrier. In order to overcome this, alternate device topologies have to be considered altogether. Extensive research on ultra thin body double gate FETs and gate all around nanowire FETs has shown a lot of promise. Under strong inversion, these devices have demonstrated increased performance over their bulk counterparts. This is mainly attributed to full carrier inversion in the body. However, these devices are still limited by lithographic and processing challenges making them unsuitable for commercial production. This thesis explores a unique device structure called the CFET (Cylindrical Field Effect Transistors) which also like the above, relies on complete inversion of carriers in the body/bulk. Using dual gates; an outer and an inner gate, full-volume inversion is possible with benefits such as enhanced drive currents, high Ion/Ioff ratios and reduced short channel effects.

  19. Degradation mechanisms of current gain in NPN transistors

    Science.gov (United States)

    Li, Xing-Ji; Geng, Hong-Bin; Lan, Mu-Jie; Yang, De-Zhuang; He, Shi-Yu; Liu, Chao-Ming

    2010-06-01

    An investigation of ionization and displacement damage in silicon NPN bipolar junction transistors (BJTs) is presented. The transistors were irradiated separately with 90-keV electrons, 3-MeV protons and 40-MeV Br ions. Key parameters were measured in-situ and the change in current gain of the NPN BJTS was obtained at a fixed collector current (Ic = 1 mA). To characterise the radiation damage of NPN BJTs, the ionizing dose Di and displacement dose Dd as functions of chip depth in the NPN BJTs were calculated using the SRIM and Geant4 code for protons, electrons and Br ions, respectively. Based on the discussion of the radiation damage equation for current gain, it is clear that the current gain degradation of the NPN BJTs is sensitive to both ionization and displacement damage. The degradation mechanism of the current gain is related to the ratio of Dd/(Dd + Di) in the sensitive region given by charged particles. The irradiation particles leading to lower Dd/(Dd + Di) within the same chip depth at a given total dose would mainly produce ionization damage to the NPN BJTs. On the other hand, the charged particles causing larger Dd/(Dd + Di) at a given total dose would tend to generate displacement damage to the NPN BJTs. The Messenger-Spratt equation could be used to describe the experimental data for the latter case.

  20. Nano-textured high sensitivity ion sensitive field effect transistors

    Energy Technology Data Exchange (ETDEWEB)

    Hajmirzaheydarali, M.; Sadeghipari, M.; Akbari, M.; Shahsafi, A.; Mohajerzadeh, S., E-mail: mohajer@ut.ac.ir [Thin Film and Nanoelectronics Lab, Nanoelectronics Center of Excellence, School of Electrical and Computer Engineering, University of Tehran, Tehran 143957131 (Iran, Islamic Republic of)

    2016-02-07

    Nano-textured gate engineered ion sensitive field effect transistors (ISFETs), suitable for high sensitivity pH sensors, have been realized. Utilizing a mask-less deep reactive ion etching results in ultra-fine poly-Si features on the gate of ISFET devices where spacing of the order of 10 nm and less is achieved. Incorporation of these nano-sized features on the gate is responsible for high sensitivities up to 400 mV/pH in contrast to conventional planar structures. The fabrication process for this transistor is inexpensive, and it is fully compatible with standard complementary metal oxide semiconductor fabrication procedure. A theoretical modeling has also been presented to predict the extension of the diffuse layer into the electrolyte solution for highly featured structures and to correlate this extension with the high sensitivity of the device. The observed ultra-fine features by means of scanning electron microscopy and transmission electron microscopy tools corroborate the theoretical prediction.

  1. Graphene-graphene oxide floating gate transistor memory.

    Science.gov (United States)

    Jang, Sukjae; Hwang, Euyheon; Lee, Jung Heon; Park, Ho Seok; Cho, Jeong Ho

    2015-01-21

    A novel transparent, flexible, graphene channel floating-gate transistor memory (FGTM) device is fabricated using a graphene oxide (GO) charge trapping layer on a plastic substrate. The GO layer, which bears ammonium groups (NH3+), is prepared at the interface between the crosslinked PVP (cPVP) tunneling dielectric and the Al2 O3 blocking dielectric layers. Important design rules are proposed for a high-performance graphene memory device: (i) precise doping of the graphene channel, and (ii) chemical functionalization of the GO charge trapping layer. How to control memory characteristics by graphene doping is systematically explained, and the optimal conditions for the best performance of the memory devices are found. Note that precise control over the doping of the graphene channel maximizes the conductance difference at a zero gate voltage, which reduces the device power consumption. The proposed optimization via graphene doping can be applied to any graphene channel transistor-type memory device. Additionally, the positively charged GO (GO-NH3+) interacts electrostatically with hydroxyl groups of both UV-treated Al2 O3 and PVP layers, which enhances the interfacial adhesion, and thus the mechanical stability of the device during bending. The resulting graphene-graphene oxide FGTMs exhibit excellent memory characteristics, including a large memory window (11.7 V), fast switching speed (1 μs), cyclic endurance (200 cycles), stable retention (10(5) s), and good mechanical stability (1000 cycles).

  2. Silicon Nanomembrane Bipolar Junction Transistors for Microwave Frequency Applications

    Science.gov (United States)

    Bavier, John; Ballarotto, Vince; Cumings, John

    2014-03-01

    Silicon nanomembranes (SiNMs) are a promising material for flexible semiconductor devices due to their high carrier mobility and compatibility with standard CMOS processing. Previous studies have reported SiNM field-effect transistors with operating frequencies as high as 12 GHz. In order to expand the utility of SiNM devices, a method for the fabrication of monocrystalline microwave frequency silicon bipolar junction transistors (BJTs) will be presented. High-temperature processing of SiNM BJT devices is performed on a Silicon-on-Insulator (SOI) wafer. Using angled ion implantation, conformal chemical vapor deposition and anisotropic reactive ion etching, a poly-silicon sidewall spacer is formed. This spacer defines a base region approximately 200nm wide without the use of electron beam lithography. Devices are then released using selective wet etching in HF and transferred to alternate flexible substrates. Microwave frequency data will be presented, and the effects of the transfer process on device performance will be discussed.

  3. Controlling signal transport in a carbon nanotube opto-transistor

    Science.gov (United States)

    Li, Jinjin; Chu, Yanhui; Zhu, Ka-Di

    2016-11-01

    With the highly competitive development of communication technologies, modern information manufactures place high importance on the ability to control the transmitted signal using easy miniaturization materials. A controlled and miniaturized optical information device is, therefore, vital for researchers in information and communication fields. Here we propose a controlled signal transport in a doubly clamped carbon nanotube system, where the transmitted signal can be controlled by another pump beam. Pump off results in the transmitted signal off, while pump on results in the transmitted signal on. The more pump, the more amplified output signal transmission. Analogous with traditional cavity optomechanical system, the role of optical cavity is played by a localized exciton in carbon nanotube while the role of the mechanical element is played by the nanotube vibrations, which enables the realization of an opto-transistor based on carbon nanotube. Since the signal amplification and attenuation have been observed in traditional optomechanical system, and the nanotube optomechanical system has been realized in laboratory, the proposed carbon nanotube opto-transistor could be implemented in current experiments and open the door to potential applications in modern optical networks and future quantum networks.

  4. "transistor-like" spin nano-switches: Physics and applications

    Science.gov (United States)

    Diep, Vinh Quang

    Progress in the last two decades has effectively integrated spintronics and nanomagnetics into a single field, creating a new class of spin-based devices that are now being widely used in magnetic memory devices. However, it is not clear if these advances could also be used to build logic devices. The objective of this thesis is three-fold: The first is to describe a general paradigm for combining Read and Write units used in memory devices into transistor like nano-switches having input-output isolation and gain. Such switches could be used to build logic circuits without the need of any external circuits or amplification. The second is to describe an experimentally benchmarked simulation model for designing a concrete implementation of a transistor-like switch based on: Giant Spin Hall Effect (Write), Magnetic Tunnel Junction (Read) and magnetic coupling for isolation. It turns out that the model can also be used to analyze/design stray fields in perpendicular magnetic tunnel junction (pMTJ), an important problem in scaled pMTJ devices. The third is to discuss the novel features and possible new class of circuits of spin nano-switches. We will first describe a spin switch nano-oscillator based on the standard principle of incorporating feedback into a device with gain. We then discuss how spin nano-switches can be used to implement different types of neural networks such as second generation, third generation and deep belief neural networks.

  5. Flexible graphene transistors for recording cell action potentials

    Science.gov (United States)

    Blaschke, Benno M.; Lottner, Martin; Drieschner, Simon; Bonaccini Calia, Andrea; Stoiber, Karolina; Rousseau, Lionel; Lissourges, Gaëlle; Garrido, Jose A.

    2016-06-01

    Graphene solution-gated field-effect transistors (SGFETs) are a promising platform for the recording of cell action potentials due to the intrinsic high signal amplification of graphene transistors. In addition, graphene technology fulfills important key requirements for in-vivo applications, such as biocompability, mechanical flexibility, as well as ease of high density integration. In this paper we demonstrate the fabrication of flexible arrays of graphene SGFETs on polyimide, a biocompatible polymeric substrate. We investigate the transistor’s transconductance and intrinsic electronic noise which are key parameters for the device sensitivity, confirming that the obtained values are comparable to those of rigid graphene SGFETs. Furthermore, we show that the devices do not degrade during repeated bending and the transconductance, governed by the electronic properties of graphene, is unaffected by bending. After cell culture, we demonstrate the recording of cell action potentials from cardiomyocyte-like cells with a high signal-to-noise ratio that is higher or comparable to competing state of the art technologies. Our results highlight the great capabilities of flexible graphene SGFETs in bioelectronics, providing a solid foundation for in-vivo experiments and, eventually, for graphene-based neuroprosthetics.

  6. Compact model for switching characteristics of graphene field effect transistor

    Science.gov (United States)

    Sreenath, R.; Bala Tripura Sundari, B.

    2016-04-01

    The scaling of CMOS transistors has resulted in intensified short channel effects, indicating that CMOS has reached its physical limits. Alternate non silicon based materials namely carbon based graphene, carbon nanotubes are being explored for usability as channel and interconnect material due to their established higher mobility and robustness. This paper presents a drift-diffusion based circuit simulatable Verilog-A compact model of graphene field effect transistor (GFET) for channel length of 100nm.The focus is on the development of simulatable device model in Verilog A based on intrinsic parameters and obtain the current, high cutoff frequency and use the model into circuit level simulations to realize an inverter and a 3-stage ring oscillator using Synopsys HSPICE. The applications are so chosen that their switching characteristics enable the determination of the RF frequency ranges of operation that the model can achieve when used in digital applications and also to compare its performance with existing CMOS model. The GFET's switching characteristics and power consumption were found to be better than similarly sized CMOS operating at same range of voltages. The basic frequency of operation in the circuit is of significant importance so as to use the model in other applications at RF and in future for millimeter wave applications. The frequency of operation at circuit level is found to be 1.1GHz at 100nm which is far higher than the existing frequency of 245 MHz reported at 500nm using AlN.

  7. Carbon nanotube transistor based high-frequency electronics

    Science.gov (United States)

    Schroter, Michael

    At the nanoscale carbon nanotubes (CNTs) have higher carrier mobility and carrier velocity than most incumbent semiconductors. Thus CNT based field-effect transistors (FETs) are being considered as strong candidates for replacing existing MOSFETs in digital applications. In addition, the predicted high intrinsic transit frequency and the more recent finding of ways to achieve highly linear transfer characteristics have inspired investigations on analog high-frequency (HF) applications. High linearity is extremely valuable for an energy efficient usage of the frequency spectrum, particularly in mobile communications. Compared to digital applications, the much more relaxed constraints for CNT placement and lithography combined with already achieved operating frequencies of at least 10 GHz for fabricated devices make an early entry in the low GHz HF market more feasible than in large-scale digital circuits. Such a market entry would be extremely beneficial for funding the development of production CNTFET based process technology. This talk will provide an overview on the present status and feasibility of HF CNTFET technology will be given from an engineering point of view, including device modeling, experimental results, and existing roadblocks. Carbon nanotube transistor based high-frequency electronics.

  8. Black Phosphorus Transistors with Near Band Edge Contact Schottky Barrier

    Science.gov (United States)

    Ling, Zhi-Peng; Sakar, Soumya; Mathew, Sinu; Zhu, Jun-Tao; Gopinadhan, K.; Venkatesan, T.; Ang, Kah-Wee

    2015-12-01

    Black phosphorus (BP) is a new class of 2D material which holds promise for next generation transistor applications owing to its intrinsically superior carrier mobility properties. Among other issues, achieving good ohmic contacts with low source-drain parasitic resistance in BP field-effect transistors (FET) remains a challenge. For the first time, we report a new contact technology that employs the use of high work function nickel (Ni) and thermal anneal to produce a metal alloy that effectively reduces the contact Schottky barrier height (ΦB) in a BP FET. When annealed at 300 °C, the Ni electrode was found to react with the underlying BP crystal and resulted in the formation of nickel-phosphide (Ni2P) alloy. This serves to de-pin the metal Fermi level close to the valence band edge and realizes a record low hole ΦB of merely ~12 meV. The ΦB at the valence band has also been shown to be thickness-dependent, wherein increasing BP multi-layers results in a smaller ΦB due to bandgap energy shrinkage. The integration of hafnium-dioxide high-k gate dielectric additionally enables a significantly improved subthreshold swing (SS ~ 200 mV/dec), surpassing previously reported BP FETs with conventional SiO2 gate dielectric (SS > 1 V/dec).

  9. Silicon junctionless field effect transistors as room temperature terahertz detectors

    Energy Technology Data Exchange (ETDEWEB)

    Marczewski, J., E-mail: jmarcz@ite.waw.pl; Tomaszewski, D.; Zaborowski, M. [Institute of Electron Technology, al. Lotnikow 32/46, 02-668 Warsaw (Poland); Knap, W. [Institute of High Pressure Physics of the Polish Academy of Sciences, ul. Sokolowska 29/37, 01-142 Warsaw (Poland); Laboratory Charles Coulomb, Montpellier University & CNRS, Place E. Bataillon, Montpellier 34095 (France); Zagrajek, P. [Institute of Optoelectronics, Military University of Technology, ul. gen. S. Kaliskiego 2, 00-908 Warsaw (Poland)

    2015-09-14

    Terahertz (THz) radiation detection by junctionless metal-oxide-semiconductor field-effect transistors (JL MOSFETs) was studied and compared with THz detection using conventional MOSFETs. It has been shown that in contrast to the behavior of standard transistors, the junctionless devices have a significant responsivity also in the open channel (low resistance) state. The responsivity for a photolithographically defined JL FET was 70 V/W and the noise equivalent power 460 pW/√Hz. Working in the open channel state may be advantageous for THz wireless and imaging applications because of its low thermal noise and possible high operating speed or large bandwidth. It has been proven that the junctionless MOSFETs can also operate in a zero gate bias mode, which enables simplification of the THz array circuitry. Existing models of THz detection by MOSFETs were considered and it has been demonstrated that the process of detection by these junctionless devices cannot be explained within the framework of the commonly accepted models and therefore requires a new theoretical approach.

  10. Introduction to thin film transistors physics and technology of TFTs

    CERN Document Server

    Brotherton, S D

    2013-01-01

    Introduction to Thin Film Transistors reviews the operation, application, and technology of the main classes of thin film transistor (TFT) of current interest for large area electronics. The TFT materials covered include hydrogenated amorphous silicon (a-Si:H), poly-crystalline silicon (poly-Si), transparent amorphous oxide semiconductors (AOS), and organic semiconductors. The large scale manufacturing of a-Si:H TFTs forms the basis of the active matrix flat panel display industry. Poly-Si TFTs facilitate the integration of electronic circuits into portable active matrix liquid crystal displays, and are increasingly used in active matrix organic light emitting diode (AMOLED) displays for smart phones. The recently developed AOS TFTs are seen as an alternative option to poly-Si and a-Si:H for AMOLED TV and large AMLCD TV applications, respectively. The organic TFTs are regarded as a cost effective route into flexible electronics. As well as treating the highly divergent preparation and properties of these mat...

  11. Charge Transport in Hybrid Halide Perovskite Field-Effect Transistors

    Science.gov (United States)

    Jurchescu, Oana

    Hybrid organic-inorganic trihalide perovskite (HTP) materials exhibit a strong optical absorption, tunable band gap, long carrier lifetimes and fast charge carrier transport. These remarkable properties, coupled with their reduced complexity processing, make the HTPs promising contenders for large scale, low-cost thin film optoelectronic applications. But in spite of the remarkable demonstrations of high performance solar cells, light-emitting diodes and field-effect transistor devices, all of which took place in a very short time period, numerous questions related to the nature and dynamics of the charge carriers and their relation to device performance, stability and reliability still remain. This presentation describes the electrical properties of HTPs evaluated from field-effect transistor measurements. The electrostatic gating of provides an unique platform for the study of intrinsic charge transport in these materials, and, at the same time, expand the use of HTPs towards switching electronic devices, which have not been explored previously. We fabricated FETs on SiO2 and polymer dielectrics from spin coating, thermal evaporation and spray deposition and compare their properties. CH3NH3PbI3-xClx can reach balanced electron and hole mobilities of 10 cm2/Vs upon tuning the thin-film microstructure, injection and the defect density at the semiconductor/dielectric interface. The work was performed in collaboration with Yaochuan Mei (Wake Forest University), Chuang Zhang, and Z. Valy Vardeny (University of Utah). The work is supported by ONR Grant N00014-15-1-2943.

  12. Potential of carbon nanotube field effect transistors for analogue circuits

    KAUST Repository

    Hayat, Khizar

    2013-05-11

    This Letter presents a detailed comparison of carbon nanotube field effect transistors (CNFETs) and metal oxide semiconductor field effect transistors (MOSFETs) with special focus on carbon nanotube FET\\'s potential for implementing analogue circuits in the mm-wave and sub-terahertz range. The latest CNFET lithographic dimensions place it at-par with complementary metal oxide semiconductor in terms of current handling capability, whereas the forecasted improvement in the lithography enables the CNFETs to handle more than twice the current of MOSFETs. The comparison of RF parameters shows superior performance of CNFETs with a g m , f T and f max of 2.7, 2.6 and 4.5 times higher, respectively. MOSFET- and CNFET-based inverter, three-stage ring oscillator and LC oscillator have been designed and compared as well. The CNFET-based inverters are found to be ten times faster, the ring oscillator demonstrates three times higher oscillation frequency and CNFET-based LC oscillator also shows improved performance than its MOSFET counterpart.

  13. Organic Light-Emitting Transistors: Materials, Device Configurations, and Operations.

    Science.gov (United States)

    Zhang, Congcong; Chen, Penglei; Hu, Wenping

    2016-03-09

    Organic light-emitting transistors (OLETs) represent an emerging class of organic optoelectronic devices, wherein the electrical switching capability of organic field-effect transistors (OFETs) and the light-generation capability of organic light-emitting diodes (OLEDs) are inherently incorporated in a single device. In contrast to conventional OFETs and OLEDs, the planar device geometry and the versatile multifunctional nature of OLETs not only endow them with numerous technological opportunities in the frontier fields of highly integrated organic electronics, but also render them ideal scientific scaffolds to address the fundamental physical events of organic semiconductors and devices. This review article summarizes the recent advancements on OLETs in light of materials, device configurations, operation conditions, etc. Diverse state-of-the-art protocols, including bulk heterojunction, layered heterojunction and laterally arranged heterojunction structures, as well as asymmetric source-drain electrodes, and innovative dielectric layers, which have been developed for the construction of qualified OLETs and for shedding new and deep light on the working principles of OLETs, are highlighted by addressing representative paradigms. This review intends to provide readers with a deeper understanding of the design of future OLETs.

  14. CMOS-based carbon nanotube pass-transistor logic integrated circuits.

    Science.gov (United States)

    Ding, Li; Zhang, Zhiyong; Liang, Shibo; Pei, Tian; Wang, Sheng; Li, Yan; Zhou, Weiwei; Liu, Jie; Peng, Lian-Mao

    2012-02-14

    Field-effect transistors based on carbon nanotubes have been shown to be faster and less energy consuming than their silicon counterparts. However, ensuring these advantages are maintained for integrated circuits is a challenge. Here we demonstrate that a significant reduction in the use of field-effect transistors can be achieved by constructing carbon nanotube-based integrated circuits based on a pass-transistor logic configuration, rather than a complementary metal-oxide semiconductor configuration. Logic gates are constructed on individual carbon nanotubes via a doping-free approach and with a single power supply at voltages as low as 0.4 V. The pass-transistor logic configurarion provides a significant simplification of the carbon nanotube-based circuit design, a higher potential circuit speed and a significant reduction in power consumption. In particular, a full adder, which requires a total of 28 field-effect transistors to construct in the usual complementary metal-oxide semiconductor circuit, uses only three pairs of n- and p-field-effect transistors in the pass-transistor logic configuration.

  15. Power lateral pnp transistor operating with high current density in irradiated voltage regulator

    Directory of Open Access Journals (Sweden)

    Vukić Vladimir Đ.

    2013-01-01

    Full Text Available The operation of power lateral pnp transistors in gamma radiation field was examined by detection of the minimum dropout voltage on heavily loaded low-dropout voltage regulators LM2940CT5, clearly demonstrating their low radiation hardness, with unacceptably low values of output voltage and collector-emitter voltage volatility. In conjunction with previous results on base current and forward emitter current gain of serial transistors, it was possible to determine the positive influence of high load current on a slight improvement of voltage regulator LM2940CT5 radiation hardness. The high-current flow through the wide emitter aluminum contact of the serial transistor above the isolation oxide caused intensive annealing of the positive oxide-trapped charge, leading to decrease of the lateral pnp transistor's current gain, but also a more intensive recovery of the small-signal npn transistors in the control circuit. The high current density in the base area of the lateral pnp transistor immediately below the isolation oxide decreased the concentration of negative interface traps. Consequently, the positive influence of the reduced concentration of the oxide-trapped charge on the negative feedback reaction circuit, together with the favourable effect of reduced interface traps concentration, exceeded negative influence of the annealed oxide-trapped charge on the serial pnp transistor's forward emitter current gain.

  16. Analogy of transistor function with modulating photonic band gap in electromagnetically induced grating.

    Science.gov (United States)

    Wang, Zhiguo; Ullah, Zakir; Gao, Mengqin; Zhang, Dan; Zhang, Yiqi; Gao, Hong; Zhang, Yanpeng

    2015-09-09

    Optical transistor is a device used to amplify and switch optical signals. Many researchers focus on replacing current computer components with optical equivalents, resulting in an optical digital computer system processing binary data. Electronic transistor is the fundamental building block of modern electronic devices. To replace electronic components with optical ones, an equivalent optical transistor is required. Here we compare the behavior of an optical transistor with the reflection from a photonic band gap structure in an electromagnetically induced transparency medium. A control signal is used to modulate the photonic band gap structure. Power variation of the control signal is used to provide an analogy between the reflection behavior caused by modulating the photonic band gap structure and the shifting of Q-point (Operation point) as well as amplification function of optical transistor. By means of the control signal, the switching function of optical transistor has also been realized. Such experimental schemes could have potential applications in making optical diode and optical transistor used in quantum information processing.

  17. A steep-slope transistor based on abrupt electronic phase transition.

    Science.gov (United States)

    Shukla, Nikhil; Thathachary, Arun V; Agrawal, Ashish; Paik, Hanjong; Aziz, Ahmedullah; Schlom, Darrell G; Gupta, Sumeet Kumar; Engel-Herbert, Roman; Datta, Suman

    2015-08-07

    Collective interactions in functional materials can enable novel macroscopic properties like insulator-to-metal transitions. While implementing such materials into field-effect-transistor technology can potentially augment current state-of-the-art devices by providing unique routes to overcome their conventional limits, attempts to harness the insulator-to-metal transition for high-performance transistors have experienced little success. Here, we demonstrate a pathway for harnessing the abrupt resistivity transformation across the insulator-to-metal transition in vanadium dioxide (VO2), to design a hybrid-phase-transition field-effect transistor that exhibits gate controlled steep ('sub-kT/q') and reversible switching at room temperature. The transistor design, wherein VO2 is implemented in series with the field-effect transistor's source rather than into the channel, exploits negative differential resistance induced across the VO2 to create an internal amplifier that facilitates enhanced performance over a conventional field-effect transistor. Our approach enables low-voltage complementary n-type and p-type transistor operation as demonstrated here, and is applicable to other insulator-to-metal transition materials, offering tantalizing possibilities for energy-efficient logic and memory applications.

  18. Modeling and simulation study of novel Double Gate Ferroelectric Junctionless (DGFJL) transistor

    Science.gov (United States)

    Mehta, Hema; Kaur, Harsupreet

    2016-09-01

    In this work we have proposed an analytical model for Double Gate Ferroelectric Junctionless Transistor (DGFJL), a novel device, which incorporates the advantages of both Junctionless (JL) transistor and Negative Capacitance phenomenon. A complete drain current model has been developed by using Landau-Khalatnikov equation and parabolic potential approximation to analyze device behavior in different operating regions. It has been demonstrated that DGFJL transistor acts as a step-up voltage transformer and exhibits subthreshold slope values less than 60 mV/dec. In order to assess the advantages offered by the proposed device, extensive comparative study has been done with equivalent Double Gate Junctionless Transistor (DGJL) transistor with gate insulator thickness same as ferroelectric gate stack thickness of DGFJL transistor. It is shown that incorporation of ferroelectric layer can overcome the variability issues observed in JL transistors. The device has been studied over a wide range of parameters and bias conditions to comprehensively investigate the device design guidelines to obtain a better insight into the application of DGFJL as a potential candidate for future technology nodes. The analytical results so derived from the model have been verified with simulated results obtained using ATLAS TCAD simulator and a good agreement has been found.

  19. Cryogenic preamplification of a single-electron-transistor using a silicon-germanium heterojunction-bipolar-transistor

    Energy Technology Data Exchange (ETDEWEB)

    Curry, M. J. [Department of Physics and Astronomy, University of New Mexico, Albuquerque, New Mexico 87131 (United States); Center for Quantum Information and Control, University of New Mexico, Albuquerque, New Mexico 87131 (United States); Sandia National Laboratories, 1515 Eubank Blvd SE, Albuquerque, New Mexico 87123 (United States); England, T. D.; Bishop, N. C.; Ten-Eyck, G.; Wendt, J. R.; Pluym, T.; Lilly, M. P.; Carroll, M. S. [Sandia National Laboratories, 1515 Eubank Blvd SE, Albuquerque, New Mexico 87123 (United States); Carr, S. M. [Center for Quantum Information and Control, University of New Mexico, Albuquerque, New Mexico 87131 (United States); Sandia National Laboratories, 1515 Eubank Blvd SE, Albuquerque, New Mexico 87123 (United States)

    2015-05-18

    We examine a silicon-germanium heterojunction bipolar transistor (HBT) for cryogenic pre-amplification of a single electron transistor (SET). The SET current modulates the base current of the HBT directly. The HBT-SET circuit is immersed in liquid helium, and its frequency response from low frequency to several MHz is measured. The current gain and the noise spectrum with the HBT result in a signal-to-noise-ratio (SNR) that is a factor of 10–100 larger than without the HBT at lower frequencies. The transition frequency defined by SNR = 1 has been extended by as much as a factor of 10 compared to without the HBT amplification. The power dissipated by the HBT cryogenic pre-amplifier is approximately 5 nW to 5 μW for the investigated range of operation. The circuit is also operated in a single electron charge read-out configuration in the time-domain as a proof-of-principle demonstration of the amplification approach for single spin read-out.

  20. Radiation Resistance of Fluorine-Implanted PNP Using Gated-Controlled Lateral PNP Transistor Structure

    Institute of Scientific and Technical Information of China (English)

    Xin Wang; Wu Lu; Wu-Ying Ma; Qi Guo; Zhi-Kuan Wang; Cheng-Fa He; Mo-Han Liu

    2016-01-01

    The radiation damage responses of fluorinated and non-fluorinated lateral PNP transistors are studied with specially designed gated-controlled lateral PNP transistors that allow for the extraction of the oxide trapped charge (Not) and interface trap (Nit) densities.All the samples are exposed in the Co-60γ ray with the dose rate of 0.5 Gy(Si)/s.After the irradiation,the buildup of Not and Nit of the samples with total dose is investigated by the gate sweep test technique.The results show that the radiation resistance of fluorinated lateral PNP transistors is significantly enhanced compared with the non-fluorinated ones.

  1. Self-standing chitosan films as dielectrics in organic thin-film transistors

    Directory of Open Access Journals (Sweden)

    J. Morgado

    2013-12-01

    Full Text Available Organic thin film transistors, using self-standing 50 µm thick chitosan films as dielectric, are fabricated using sublimed pentacene or two conjugated polymers deposited by spin coating as semiconductors. Field-effect mobilities are found to be similar to values obtained with other dielectrics and, in the case of pentacene, a value (0.13 cm2/(V•s comparable to high performing transistors was determined. In spite of the low On/Off ratios (a maximum value of 600 was obtained for the pentacene-based transistors, these are promising results for the area of sustainable organic electronics in general and for biocompatible electronics in particular.

  2. Demonstration of flexible thin film transistors with GaN channels

    Science.gov (United States)

    Bolat, S.; Sisman, Z.; Okyay, A. K.

    2016-12-01

    We report on the thin film transistors (TFTs) with Gallium Nitride (GaN) channels directly fabricated on flexible substrates. GaN thin films are grown by hollow cathode plasma assisted atomic layer deposition (HCPA-ALD) at 200 °C. TFTs exhibit 103 on-to-off current ratios and are shown to exhibit proper transistor saturation behavior in their output characteristics. Gate bias stress tests reveal that flexible GaN TFTs have extremely stable electrical characteristics. Overall fabrication thermal budget is below 200 °C, the lowest reported for the GaN based transistors so far.

  3. High mobility polymer gated organic field effect transistor using zinc phthalocyanine

    Indian Academy of Sciences (India)

    K R Rajesh; V Kannan; M R Kim; Y S Chae; J K Rhee

    2014-02-01

    Organic thin film transistors were fabricated using evaporated zinc phthalocyanine as the active layer. Parylene film prepared by chemical vapour deposition was used as the organic gate insulator. The annealing of the samples was performed at 120°C for 3 h. At room temperature, these transistors exhibit -type conductivity with field-effect mobilities ranging from 0.025–0.037 cm2/Vs and a (on/off) ratio of ∼ 103. The effect of annealing on transistor characteristics is discussed.

  4. InAlAsSb/InGaSb Double Heterojunction Bipolar Transistor

    Science.gov (United States)

    2005-03-01

    Papanicolaou An npn double heterojunction bipolar transistor has been made using In0.27Ga0.73Sb for the base and two different InxAl1-xAsySb1-y alloys...zSb base constitute a new group of semiconductors for making an npn double heterojunction bipolar transistor (DHBT). The group of alloys reported here...MAR 2005 2. REPORT TYPE 3. DATES COVERED 00-00-2005 to 00-00-2005 4. TITLE AND SUBTITLE InAlAsSb/InGaSb double heterojunction bipolar transistor

  5. Fabrication-Technology Research of New Type Silicon Magnetic-Sensitive Transistor

    Institute of Scientific and Technical Information of China (English)

    Xiaofeng Zhao; Dianzhong Wen

    2006-01-01

    This paper mainly describes a research of fabrication-technology of silicon magnetic-sensitive transistor (SMST) with rectangle-plank-cubic structure fabricated on silicon wafer by MEMS technique. An experiment research on basic characteristic of the silicon magnetic-sensitive transistor was done. Anisotropic etching and reliable technique project were provided and applied in order to fabricate SMST with rectangle-plank-cubic construction. This means that a new kind of fabrication technology for silicon magnetic-sensitive transistor was provided. The result shows that the technique can be not only compatible with IC technology but also integrated easily, and has a wide application field.

  6. Total dose radiation effects on SOI NMOS transistors with different layouts

    Institute of Scientific and Technical Information of China (English)

    TIAN Hao; ZHANG Zheng-Xuan; HE Wei; YU Wen-Jie; WANG Ru; CHEN Ming

    2008-01-01

    Partially-depleted Silicon-On-Insulator Negative Channel Metal Oxide Semiconductor (SOI NMOS)transistors with different layouts are fabricated on radiation hard Separation by IMplanted OXygen (SIMOX)substrate and tested using 10 keV X-ray radiation sources.The radiation performance is characterized by transistor threshold voltage shift and transistor leakage currents as a function of the total dose up to 2.0×106 rad(Si).The results show that the total dose radiation effects on NMOS devices are very sensitive to their layout structures.

  7. Simulation of quantum-well slipping effect on optical bandwidth in transistor laser

    Institute of Scientific and Technical Information of China (English)

    Hassan Kaatuzian; Seyed Iman Taghavi

    2009-01-01

    An optical bandwidth analysis of a quantum-well(16 nm)transistor laser with 150-μm cavity length using a charge control model is reported in order to modify the quantum-well location through the base region.At constant bias current,the simulation shows significant enhancement in optical bandwidth due to moving the quantum well in the direction of collector-base junction.No remarkable resonance peak,limiting factor in laser diodes,is observed during this modification in transistor laser structure.The method can be utilized for transistor laser structure design.

  8. Organic light emitting field effect transistors based on an ambipolar p-i-n layered structure

    Science.gov (United States)

    Maiorano, V.; Bramanti, A.; Carallo, S.; Cingolani, R.; Gigli, G.

    2010-03-01

    A bottom contact/top gate ambipolar "p-i-n" layered light emitting field effect transistor with the active medium inserted between two doped transport layers, is reported. The doping profile results crucial to the capability of emitting light, as well as to the electrical characteristics of the device. In this sense, high output current at relative low applied gate/drain voltage and light emission along the whole large area transistor channel are observed, putting the basis to full integration of organic light emitting field effect transistors in planar complex devices.

  9. Application of Transistors in Textiles: Monitoring Water Transportation Behaviour in Fibrous Assemblies

    Science.gov (United States)

    Chatterjee, Arobindo; Singh, Pratibha; Ghosh, Subrata

    2016-11-01

    Simple semiconductor device has been used for amplifying the analog signals, obtained with the change in electrical resistance in fibrous assembly and converting these amplified copies of signals to digital signals. This paper deals with the application of transistors as amplifier, as well as switch. Different circuit configurations using transistors have been tried for sensing and reciprocating the real time data on suitable display device. It is found that transistors configured as common-emitter amplifiers can precisely sense the liquid at the surface of fibrous assembly at different levels with respect to time.

  10. Principles of transistor circuits introduction to the design of amplifiers, receivers and digital circuits

    CERN Document Server

    Amos, S W

    2013-01-01

    For over thirty years, Stan Amos has provided students and practitioners with a text they could rely on to keep them at the forefront of transistor circuit design. This seminal work has now been presented in a clear new format and completely updated to include the latest equipment such as laser diodes, Trapatt diodes, optocouplers and GaAs transistors, and the most recent line output stages and switch-mode power supplies.Although integrated circuits have widespread application, the role of discrete transistors is undiminished, both as important building blocks which students must understand an

  11. Fabrication and electrical properties of single wall carbon nanotube channel and graphene electrode based transistors arrays

    Energy Technology Data Exchange (ETDEWEB)

    Seo, M.; Kim, H.; Kim, Y. H.; Yun, H.; McAllister, K.; Lee, S. W., E-mail: leesw@konkuk.ac.kr [Division of Quantum Phases and Devices, School of Physics, Konkuk University, Seoul 143-701 (Korea, Republic of); Na, J.; Kim, G. T. [School of Electrical Engineering, Korea University, Seoul 136-701 (Korea, Republic of); Lee, B. J.; Kim, J. J.; Jeong, G. H. [Department of Nano Applied Engineering, Kangwon National University, Kangwon-do 200-701 (Korea, Republic of); Lee, I.; Kim, K. S. [Department of Physics and Graphene Research Institute, Sejong University, Seoul 143-747 (Korea, Republic of)

    2015-07-20

    A transistor structure composed of an individual single-walled carbon nanotube (SWNT) channel with a graphene electrode was demonstrated. The integrated arrays of transistor devices were prepared by transferring patterned graphene electrode patterns on top of the aligned SWNT along one direction. Both single and multi layer graphene were used for the electrode materials; typical p-type transistor and Schottky diode behavior were observed, respectively. Based on our fabrication method and device performances, several issues are suggested and discussed to improve the device reliability and finally to realize all carbon based future electronic systems.

  12. Retos Sobre el Modelado del Transistor de Compuerta Flotante de Múltiples Entradas en Circuitos Integrados

    Directory of Open Access Journals (Sweden)

    Agustín Santiago Medina Vázquez

    2012-11-01

    Full Text Available En este artículo se presentan las consideraciones que hay que adoptar para el uso del transistor de compuerta flotante de múltiples entradas para el diseño de circuitos integrados analógicos. Para ello se presentan las principales características de este transistor así como sus principales ventajas con respecto al transistor MOSFET convencional que este dispositivo ofrece. También, se exponen los principales problemas que han frenado el uso de este dispositivo en el ámbito comercial debido a la falta de modelos precisos.

  13. Transistor effects and in situ STM of redox molecules at room temperature

    DEFF Research Database (Denmark)

    Albrecht, Tim; Guckian, A; Vos, JG

    2005-01-01

    Inorganic transition metal complexes were identified as potential candidates for transistor-like behavior in an electrochemical scanning tunnelling microscope (STM) configuration at room temperature. The theoretical background has been established based on condensed matter charge transfer theory....... resolution reveal detailed information on their surface structure and scanning tunnelling spectroscopy experiments have shown clear evidence of transistor-like behavior......Inorganic transition metal complexes were identified as potential candidates for transistor-like behavior in an electrochemical scanning tunnelling microscope (STM) configuration at room temperature. The theoretical background has been established based on condensed matter charge transfer theory...

  14. Paired-pulse facilitation achieved in protonic/electronic hybrid indium gallium zinc oxide synaptic transistors

    Energy Technology Data Exchange (ETDEWEB)

    Guo, Li Qiang, E-mail: guoliqiang@ujs.edu.cn; Ding, Jian Ning; Huang, Yu Kai [Micro/Nano Science & Technology Center, Jiangsu University, Zhenjiang, 212013 (China); Zhu, Li Qiang, E-mail: lqzhu@nimte.ac.cn [Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo 315201 (China)

    2015-08-15

    Neuromorphic devices with paired pulse facilitation emulating that of biological synapses are the key to develop artificial neural networks. Here, phosphorus-doped nanogranular SiO{sub 2} electrolyte is used as gate dielectric for protonic/electronic hybrid indium gallium zinc oxide (IGZO) synaptic transistor. In such synaptic transistors, protons within the SiO{sub 2} electrolyte are deemed as neurotransmitters of biological synapses. Paired-pulse facilitation (PPF) behaviors for the analogous information were mimicked. The temperature dependent PPF behaviors were also investigated systematically. The results indicate that the protonic/electronic hybrid IGZO synaptic transistors would be promising candidates for inorganic synapses in artificial neural network applications.

  15. An improved PIN photodetector with integrated JFET on high-resistivity silicon

    Energy Technology Data Exchange (ETDEWEB)

    Dalla Betta, Gian-Franco [Dipartimento di Informatica e Telecomunicazioni, Universita di Trento, Via Sommarive 14, I-38050 Povo (Trento) (Italy); Piemonte, Claudio [ITC-irst, Divisione Microsistemi, Via Sommarive 18, I-38050 Povo (Trento) (Italy); Boscardin, Maurizio [ITC-irst, Divisione Microsistemi, Via Sommarive 18, I-38050 Povo (Trento) (Italy); Gregori, Paolo [ITC-irst, Divisione Microsistemi, Via Sommarive 18, I-38050 Povo (Trento) (Italy); Zorzi, Nicola [ITC-irst, Divisione Microsistemi, Via Sommarive 18, I-38050 Povo (Trento) (Italy); Fazzi, Alberto [Dipartimento di Ingegneria Nucleare, Politecnico di Milano, 20133 Milan (Italy); Pignatel, Giorgio U. [Dipartimento di Ingegneria Elettronica e Informazione, Universita di Perugia, 06125 Perugia (Italy)]. E-mail: giorgio.pignatel@diei.unipg.it

    2006-11-01

    We report on a PIN photodetector integrated with a Junction Field Effect Transistor (JFET) on a high-resistivity silicon substrate. Owing to a modified fabrication technology, the electrical and noise characteristics of the JFET transistor have been enhanced with respect to the previous versions of the device, allowing the performance to be significantly improved. In this paper, the main design and technological aspects relevant to the proposed structure are addressed and experimental results from the electrical characterization are discussed.

  16. Nanoscale Magnetic Materials for Energy-Efficient Spin Based Transistors

    Science.gov (United States)

    Incorvia, Jean Anne Currivan

    In this dissertation, I study the physical behavior of nanoscale magnetic materials and build spin-based transistors that encode information in magnetic domain walls. It can be argued that energy dissipation is the most serious problem in modern electronics, and one that has been resistant to a breakthrough. Wasted heat during computing both wastes energy and hinders further technology scaling. This is an opportunity for physicists and engineers to come up with creative solutions for more energy-efficient computing. I present the device we have designed, called domain wall logic (DW-Logic). Information is stored in the position of a magnetic domain wall in a ferromagnetic wire and read out using a magnetic tunnel junction. This hybrid design uses electrical current as the input and output, keeping the device compatible with charge- based transistors. I build an iterative model to predict both the micromagnetic and circuit behavior of DW- Logic, showing a single device can operate as a universal gate. The model shows we can build complex circuits including an 18-gate Full Adder, and allows us to predict the device switching energy compared to complementary metal-oxide semiconductor (CMOS) transistors. Comparing ?15 nm feature nodes, I find DW-Logic made with perpendicular magnetic anisotropy materials, and utilizing both spin torque transfer and the Spin Hall effect, could operate with 1000x reduced switching energy compared to CMOS. I fabricate DW-Logic device prototypes and show in experiment they can act as AND and NAND gates. I demonstrate that one device can drive two subsequent devices, showing gain, which is a necessary requirement for fanout. I also build a clocked ring oscillator circuit to demonstrate successful bit propagation in a DW-Logic circuit and show that properly scaled devices can have improved operation. Through building the devices, I develop a novel fabrication method for patterning sub-25 nm magnetic wires with very low (˜ 2 nm) average edge

  17. Silicide Nanowires for Low-Resistance CMOS Transistor Contacts.

    Science.gov (United States)

    Zollner, Stefan

    2007-03-01

    Transition metal (TM) silicide nanowires are used as contacts for modern CMOS transistors. (Our smallest wires are ˜20 nm thick and ˜50 nm wide.) While much research on thick TM silicides was conducted long ago, materials perform differently at the nanoscale. For example, the usual phase transformation sequences (e.g., Ni, Ni2Si, NiSi, NiSi2) for the reaction of thick metal films on Si no longer apply to nanostructures, because the surface and interface energies compete with the bulk energy of a given crystal structure. Therefore, a NiSi film will agglomerate into hemispherical droplets of NiSi by annealing before it reaches the lowest-energy (NiSi2) crystalline structure. These dynamics can be tuned by addition of impurities (such as Pt in Ni). The Si surface preparation is also a more important factor for nanowires than for silicidation of thick TM films. Ni nanowires formed on Si surfaces that were cleaned and amorphized by sputtering with Ar ions have a tendency to form NiSi2 pyramids (``spikes'') even at moderate temperatures (˜400^oC), while similar Ni films formed on atomically clean or hydrogen-terminated Si form uniform NiSi nanowires. Another issue affecting TM silicides is the barrier height between the silicide contact and the silicon transistor. For most TM silicides, the Fermi level of the silicide is aligned with the center of the Si band gap. Therefore, silicide contacts experience Schottky barrier heights of around 0.5 eV for both n-type and p-type Si. The resulting contact resistance becomes a significant term for the overall resistance of modern CMOS transistors. Lowering this contact resistance is an important goal in CMOS research. New materials are under investigation (for example PtSi, which has a barrier height of only 0.3 eV to p-type Si). This talk will describe recent results, with special emphasis on characterization techniques and electrical testing useful for the development of silicide nanowires for CMOS contacts. In collaboration

  18. A tunable colloidal quantum dot photo field-effect transistor

    KAUST Repository

    Ghosh, Subir

    2011-01-01

    We fabricate and investigate field-effect transistors in which a light-absorbing photogate modulates the flow of current along the channel. The photogate consists of colloidal quantum dots that efficiently transfer photoelectrons to the channel across a charge-separating (type-II) heterointerface, producing a primary and sustained secondary flow that is terminated via electron back-recombination across the interface. We explore colloidal quantum dot sizes corresponding to bandgaps ranging from 730 to 1475 nm and also investigate various stoichiometries of aluminum-doped ZnO (AZO) channel materials. We investigate the role of trap state energies in both the colloidal quantum dot energy film and the AZO channel. © 2011 American Institute of Physics.

  19. N-type organic electrochemical transistors with stability in water

    KAUST Repository

    Giovannitti, Alexander

    2016-10-07

    Organic electrochemical transistors (OECTs) are receiving significant attention due to their ability to efficiently transduce biological signals. A major limitation of this technology is that only p-type materials have been reported, which precludes the development of complementary circuits, and limits sensor technologies. Here, we report the first ever n-type OECT, with relatively balanced ambipolar charge transport characteristics based on a polymer that supports both hole and electron transport along its backbone when doped through an aqueous electrolyte and in the presence of oxygen. This new semiconducting polymer is designed specifically to facilitate ion transport and promote electrochemical doping. Stability measurements in water show no degradation when tested for 2 h under continuous cycling. This demonstration opens the possibility to develop complementary circuits based on OECTs and to improve the sophistication of bioelectronic devices.

  20. Detection of sulfur dioxide gas with graphene field effect transistor

    Science.gov (United States)

    Ren, Yujie; Zhu, Chaofu; Cai, Weiwei; Li, Huifeng; Ji, Hengxing; Kholmanov, Iskandar; Wu, Yaping; Piner, Richard D.; Ruoff, Rodney S.

    2012-04-01

    Graphene grown by chemical vapor deposition on a Cu foil and transferred onto a Si wafer has been used to fabricate a field effect transistor device that was used to study the sensing of SO2 gas. It was found by in-situ measurements that the SO2 strongly p-dopes the graphene and dramatically shifts its Dirac point. This effect was used to monitor the SO2 gas. The detector can be completely reset by thermal annealing at 100 °C in high vacuum. The response and recovery of the detector are faster at higher temperatures. Moreover, the sensitivity of the SO2 graphene detector increases proportionally with increasing temperature.

  1. Improving the radiation hardness of graphene field effect transistors

    Science.gov (United States)

    Alexandrou, Konstantinos; Masurkar, Amrita; Edrees, Hassan; Wishart, James F.; Hao, Yufeng; Petrone, Nicholas; Hone, James; Kymissis, Ioannis

    2016-10-01

    Ionizing radiation poses a significant challenge to the operation and reliability of conventional silicon-based devices. Here, we report the effects of gamma radiation on graphene field-effect transistors (GFETs), along with a method to mitigate those effects by developing a radiation-hardened version of our back-gated GFETs. We demonstrate that activated atmospheric oxygen from the gamma ray interaction with air damages the semiconductor device, and damage to the substrate contributes additional threshold voltage instability. Our radiation-hardened devices, which have protection against these two effects, exhibit minimal performance degradation, improved stability, and significantly reduced hysteresis after prolonged gamma radiation exposure. We believe this work provides an insight into graphene's interactions with ionizing radiation that could enable future graphene-based electronic devices to be used for space, military, and other radiation-sensitive applications.

  2. Highly stable thin film transistors using multilayer channel structure

    KAUST Repository

    Nayak, Pradipta K.

    2015-03-09

    We report highly stable gate-bias stress performance of thin film transistors (TFTs) using zinc oxide (ZnO)/hafnium oxide (HfO2) multilayer structure as the channel layer. Positive and negative gate-bias stress stability of the TFTs was measured at room temperature and at 60°C. A tremendous improvement in gate-bias stress stability was obtained in case of the TFT with multiple layers of ZnO embedded between HfO2 layers compared to the TFT with a single layer of ZnO as the semiconductor. The ultra-thin HfO2 layers act as passivation layers, which prevent the adsorption of oxygen and water molecules in the ZnO layer and hence significantly improve the gate-bias stress stability of ZnO TFTs.

  3. Quantum spin transistor with a Heisenberg spin chain

    Science.gov (United States)

    Marchukov, O. V.; Volosniev, A. G.; Valiente, M.; Petrosyan, D.; Zinner, N. T.

    2016-10-01

    Spin chains are paradigmatic systems for the studies of quantum phases and phase transitions, and for quantum information applications, including quantum computation and short-distance quantum communication. Here we propose and analyse a scheme for conditional state transfer in a Heisenberg XXZ spin chain which realizes a quantum spin transistor. In our scheme, the absence or presence of a control spin excitation in the central gate part of the spin chain results in either perfect transfer of an arbitrary state of a target spin between the weakly coupled input and output ports, or its complete blockade at the input port. We also discuss a possible proof-of-concept realization of the corresponding spin chain with a one-dimensional ensemble of cold atoms with strong contact interactions. Our scheme is generally applicable to various implementations of tunable spin chains, and it paves the way for the realization of integrated quantum logic elements.

  4. Multicolored Nanofiber Based Organic Light-Emitting Transistor

    DEFF Research Database (Denmark)

    With Jensen, Per Baunegaard; Kjelstrup-Hansen, Jakob; Tavares, Luciana;

    For optoelectronic applications, organic semiconductors have several advantages over their inorganic counterparts such as facile synthesis, tunability via synthetic chemistry, and low temperature processing. Self-assembled, molecular crystalline nanofibers are of particular interest as they could...... form ultra-small light-emitters in future nanophotonic applications. Such organic nanofibers exhibit many interesting optical properties including polarized photo- and electroluminescence, waveguiding, and emission color tunability. We here present a first step towards a multicolored, electrically...... driven device by combining nanofibers made from two different molecules, parahexaphenylene (p6P) and 5,5´-Di-4-biphenyl-2,2´-bithiophene (PPTTPP), which emits blue and green light, respectively. The organic nanofibers are implemented on a bottom gate/bottom contact field-effect transistor platform using...

  5. Abnormal Dirac point shift in graphene field-effect transistors

    Science.gov (United States)

    Wang, Shaoqing; Jin, Zhi; Huang, Xinnan; Peng, Songang; Zhang, Dayong; Shi, Jingyuan

    2016-09-01

    The shift of Dirac point in graphene devices is of great importance, influencing the reliability and stability. Previous studies show the Dirac point shifts slightly to be more positive when the drain bias increases. Here, an abnormal shift of Dirac point is observed in monolayer graphene field effect transistors by investigating the transfer curves under various drain biases. The voltage of Dirac point shifts positively at first and then decreases rapidly when the channel electric field exceeds some threshold. The negative Dirac point shift is attributed to holes injection into oxide layer and captured by the oxide traps under high channel electric field. This can also be demonstrated through a simple probability model and the graphene Raman spectra before and after the DC measurement.

  6. Valleytronics. The valley Hall effect in MoS₂ transistors.

    Science.gov (United States)

    Mak, K F; McGill, K L; Park, J; McEuen, P L

    2014-06-27

    Electrons in two-dimensional crystals with a honeycomb lattice structure possess a valley degree of freedom (DOF) in addition to charge and spin. These systems are predicted to exhibit an anomalous Hall effect whose sign depends on the valley index. Here, we report the observation of this so-called valley Hall effect (VHE). Monolayer MoS2 transistors are illuminated with circularly polarized light, which preferentially excites electrons into a specific valley, causing a finite anomalous Hall voltage whose sign is controlled by the helicity of the light. No anomalous Hall effect is observed in bilayer devices, which have crystal inversion symmetry. Our observation of the VHE opens up new possibilities for using the valley DOF as an information carrier in next-generation electronics and optoelectronics.

  7. N-type organic electrochemical transistors with stability in water

    Science.gov (United States)

    Giovannitti, Alexander; Nielsen, Christian B.; Sbircea, Dan-Tiberiu; Inal, Sahika; Donahue, Mary; Niazi, Muhammad R.; Hanifi, David A.; Amassian, Aram; Malliaras, George G.; Rivnay, Jonathan; McCulloch, Iain

    2016-01-01

    Organic electrochemical transistors (OECTs) are receiving significant attention due to their ability to efficiently transduce biological signals. A major limitation of this technology is that only p-type materials have been reported, which precludes the development of complementary circuits, and limits sensor technologies. Here, we report the first ever n-type OECT, with relatively balanced ambipolar charge transport characteristics based on a polymer that supports both hole and electron transport along its backbone when doped through an aqueous electrolyte and in the presence of oxygen. This new semiconducting polymer is designed specifically to facilitate ion transport and promote electrochemical doping. Stability measurements in water show no degradation when tested for 2 h under continuous cycling. This demonstration opens the possibility to develop complementary circuits based on OECTs and to improve the sophistication of bioelectronic devices. PMID:27713414

  8. Study of surface charges in ballistic deflection transistors

    Science.gov (United States)

    Millithaler, J.-F.; Iñiguez-de-la-Torre, I.; Mateos, J.; GonzáIez, T.; Margala, M.

    2015-12-01

    This paper presents a comprehensive study of the behavior of surface charges in ballistic deflection transistors, at room temperature, where the in-plane geometry associating two drains with two gates in push-pull modes allows the control of electron path. Monte Carlo simulations were performed and compared with experimental data by using different models for accounting for surface charge effects. The simple model which assumes a constant and uniform value of the surface charge provides good results at equilibrium, but it is not able to correctly reproduce the BDT’s complex behavior when biased. We have confirmed that for a correct description of the device operation it is necessary to use a model allowing the surface charge to adapt itself locally to the carrier concentration in its surroundings.

  9. Ultrathin flexible memory devices based on organic ferroelectric transistors

    Science.gov (United States)

    Sugano, Ryo; Hirai, Yoshinori; Tashiro, Tomoya; Sekine, Tomohito; Fukuda, Kenjiro; Kumaki, Daisuke; Domingues dos Santos, Fabrice; Miyabo, Atsushi; Tokito, Shizuo

    2016-10-01

    Here, we demonstrate ultrathin, flexible nonvolatile memory devices with excellent durability under compressive strain. Ferroelectric-gate field-effect transistors (FeFETs) employing organic semiconductor and polymer ferroelectric layers are fabricated on a 1-µm-thick plastic film substrate. The FeFETs are characterized by measuring their transfer characteristics, programming time, and data retention time. The data retention time is almost unchanged even when a 50% compressive strain is applied to the devices. To clarify the origin of the excellent durability of the devices against compressive strain, an intermediate plane is calculated. From the calculation result, the intermediate plane is placed close to the channel region of the FeFETs. The high flexibility of the ferroelectric polymer and ultrathin device structure contributes to achieving a bending radius of 0.8 µm without the degradation of memory characteristics.

  10. Energy capability enhancement for isolated extended drain NMOS transistors

    Institute of Scientific and Technical Information of China (English)

    聂卫东; 吴金; 马晓辉; 于宗光

    2012-01-01

    Isolated extended drain NMOS (EDNMOS) transistors are widely used in power signal processing.The hole current induced by a high electric field can result in a serious reliability problem due to a parasitic NPN effect.By optimizing p-type epitaxial (p-epi) thickness,n-type buried layer (BLN) and nwell doping distribution,the peak electric field is decreased by 30% and the peak hole current is decreased by 60%,which obviously suppress the parasitic NPN effect.Measured I-V characteristics and transmission line pulsing (TLP) results show that the onstate breakdown voltage is increased from 28 to 37 V when 6 V Vgs is applied and the energy capability is improved by about 30%,while the on-state resistance remains unchanged.

  11. Comprehensive failure analysis of leakage faults in bipolar transistors

    Science.gov (United States)

    Domengès, B.; Murray, H.; Schwindenhammer, P.; Imbert, G.

    2004-02-01

    The origin of a leakage current in several failed NPN bipolar transistors has been identified by complementary advanced failure analysis techniques. After precise localization of the failing area by photon emission microscopy and optical beam induced resistance change investigations, a focus ion beam technique was used to prepare thin lamellae adequate for transmission electron microscopy (TEM) study. Characterization of the related microstructure was performed by TEM and energy-dispersive spectrometry nanobeam analyses. It was identified as Ti-W containing trickle-like residue located at the surface of the spacers. Current-voltage measurements could be related to such structure defects and the involved conduction mechanism was identified as the Poole-Frenkel effect.

  12. InP-based deep-ridge NPN transistor laser

    Science.gov (United States)

    Liang, S.; Kong, D. H.; Zhu, H. L.; Zhao, L. J.; Pan, J. Q.; Wang, W.

    2011-08-01

    We report an InP-based deep-ridge NPN transistor laser (TL, λ˜1.5μm). By placing the quantum well (QW) active material above the heavily Zn-doped base layer, both the optical absorption of the heavily p-doped base material and the damage of the quality of the QWs resulted from the Zn diffusion into the QWs are decreased greatly. CW operation of the TL is achieved at -40°C, which is much better than the shallow-ridge InP-based NPN TL. With future optimization of the growth procedure, significant improvement of the performance of the deep-ridge InP-based NPN TLs is expected.

  13. Energy capability enhancement for isolated extended drain NMOS transistors

    Science.gov (United States)

    Weidong, Nie; Jin, Wu; Xiaohui, Ma; Zongguang, Yu

    2012-02-01

    Isolated extended drain NMOS (EDNMOS) transistors are widely used in power signal processing. The hole current induced by a high electric field can result in a serious reliability problem due to a parasitic NPN effect. By optimizing p-type epitaxial (p-epi) thickness, n-type buried layer (BLN) and nwell doping distribution, the peak electric field is decreased by 30% and the peak hole current is decreased by 60%, which obviously suppress the parasitic NPN effect. Measured I-V characteristics and transmission line pulsing (TLP) results show that the on-state breakdown voltage is increased from 28 to 37 V when 6 V Vgs is applied and the energy capability is improved by about 30%, while the on-state resistance remains unchanged.

  14. Theoretical study of phosphorene tunneling field effect transistors

    Energy Technology Data Exchange (ETDEWEB)

    Chang, Jiwon; Hobbs, Chris [SEMATECH, 257 Fuller Rd #2200, Albany, New York 12203 (United States)

    2015-02-23

    In this work, device performances of tunneling field effect transistors (TFETs) based on phosphorene are explored via self-consistent atomistic quantum transport simulations. Phosphorene is an ultra-thin two-dimensional (2-D) material with a direct band gap suitable for TFETs applications. Our simulation shows that phosphorene TFETs exhibit subthreshold slope below 60 mV/dec and a wide range of on-current depending on the transport direction due to highly anisotropic band structures of phosphorene. By benchmarking with monolayer MoTe{sub 2} TFETs, we predict that phosphorene TFETs oriented in the small effective mass direction can yield much larger on-current at the same on-current/off-current ratio than monolayer MoTe{sub 2} TFETs. It is also observed that a gate underlap structure is required for scaling down phosphorene TFETs in the small effective mass direction to suppress the source-to-drain direct tunneling leakage current.

  15. Microwave Spectroscopy of Carbon Nanotube Field Effect Transistor

    Directory of Open Access Journals (Sweden)

    Mina A. N.

    2010-10-01

    Full Text Available The quantum transport property of a carbon nanotube field effect transistor (CNTFET is investigated under the effect of microwave radiation and magnetic field. The photon-assisted tunneling probability is deduced by solving Dirac equation. Then the current is deduced according to Landauer-Buttiker formula. Oscillatory behavior of the current is observed which is due to the Coulomb blockade oscillations. It was found, also, that the peak heights of the dependence of the current on the parameters under study are strongly affected by the interplay between the tunneled electrons and the photon energy. This interplay affects on the sidebands resonance. The results obtained in the present paper are found to be in concordant with those in the literature, which confirms the correctness of the proposed model. This study is valuable for nanotechnology applications, e.g., photo-detector devices and solid state quantum computing systems and quantum information processes.

  16. Microwave Spectroscopy of Carbon Nanotube Field Effect Transistor

    Directory of Open Access Journals (Sweden)

    Mina A. N.

    2010-10-01

    Full Text Available The quantum transport property of a carbon nanotube field effect transistor (CNTFET is investigated under the effect of microwave radiation and magnetic field. The photon- assisted tunneling probability is deduced by solving Dirac equation. Then the current is deduced according to Landauer-Buttiker formula. Oscillatory behavior of the cur- rent is observed which is due to the Coulomb blockade oscillations. It was found, also, that the peak heights of the dependence of the current on the parameters under study are strongly affected by the interplay between the tunneled electrons and the photon energy. This interplay affects on the sidebands resonance. The results obtained in the present paper are found to be in concordant with those in the literature, which confirms the cor- rectness of the proposed model. This study is valuable for nanotechnology applications, e.g., photo-detector devices and solid state quantum computing systems and quantum information processes.

  17. From transistor to trapped-ion computers for quantum chemistry.

    Science.gov (United States)

    Yung, M-H; Casanova, J; Mezzacapo, A; McClean, J; Lamata, L; Aspuru-Guzik, A; Solano, E

    2014-01-07

    Over the last few decades, quantum chemistry has progressed through the development of computational methods based on modern digital computers. However, these methods can hardly fulfill the exponentially-growing resource requirements when applied to large quantum systems. As pointed out by Feynman, this restriction is intrinsic to all computational models based on classical physics. Recently, the rapid advancement of trapped-ion technologies has opened new possibilities for quantum control and quantum simulations. Here, we present an efficient toolkit that exploits both the internal and motional degrees of freedom of trapped ions for solving problems in quantum chemistry, including molecular electronic structure, molecular dynamics, and vibronic coupling. We focus on applications that go beyond the capacity of classical computers, but may be realizable on state-of-the-art trapped-ion systems. These results allow us to envision a new paradigm of quantum chemistry that shifts from the current transistor to a near-future trapped-ion-based technology.

  18. Adiabatic Charge Control in a Single Donor Atom Transistor

    CERN Document Server

    Prati, Enrico; Cocco, Simone; Petretto, Guido; Fanciulli, Marco

    2010-01-01

    A Silicon quantum device containing a single Arsenic donor and an electrostatic quantum dot in parallel is realized in a nanometric field effect transistor. The different coupling capacitances of the donor and the quantum dot with the control and the back gates determine a relative rigid shift of their energy spectrum as a function of the back gate voltage, causing the crossing of the energy levels. We observe the sequential tunneling through the $D^{2-}$ and the $D^{3-}$ energy levels of the donor at 4.2 K, ordinarily hidden at high temperature as they lie above the conduction band edge of Silicon. The exchange coupling of the localized electrons is controlled in the anticrossing region by moving one electron from the donor to the quantum dot site and \\textit{viceversa}, in order to realize physical qubits for quantum information processing.

  19. Scaling carbon nanotube complementary transistors to 5-nm gate lengths

    Science.gov (United States)

    Qiu, Chenguang; Zhang, Zhiyong; Xiao, Mengmeng; Yang, Yingjun; Zhong, Donglai; Peng, Lian-Mao

    2017-01-01

    High-performance top-gated carbon nanotube field-effect transistors (CNT FETs) with a gate length of 5 nanometers can be fabricated that perform better than silicon complementary metal-oxide semiconductor (CMOS) FETs at the same scale. A scaling trend study revealed that the scaled CNT-based devices, which use graphene contacts, can operate much faster and at much lower supply voltage (0.4 versus 0.7 volts) and with much smaller subthreshold slope (typically 73 millivolts per decade). The 5-nanometer CNT FETs approached the quantum limit of FETs by using only one electron per switching operation. In addition, the contact length of the CNT CMOS devices was also scaled down to 25 nanometers, and a CMOS inverter with a total pitch size of 240 nanometers was also demonstrated.

  20. Tin - an unlikely ally for silicon field effect transistors?

    KAUST Repository

    Hussain, Aftab M.

    2014-01-13

    We explore the effectiveness of tin (Sn), by alloying it with silicon, to use SiSn as a channel material to extend the performance of silicon based complementary metal oxide semiconductors. Our density functional theory based simulation shows that incorporation of tin reduces the band gap of Si(Sn). We fabricated our device with SiSn channel material using a low cost and scalable thermal diffusion process of tin into silicon. Our high-κ/metal gate based multi-gate-field-effect-transistors using SiSn as channel material show performance enhancement, which is in accordance with the theoretical analysis. © 2014 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.