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Sample records for array project silicon

  1. Flat-plate solar array project. Volume 2: Silicon material

    Science.gov (United States)

    Lutwack, R.

    1986-10-01

    The goal of the Silicon Material Task, a part of the Flat Plate Solar Array (FSA) Project, was to develop and demonstate the technology for the low cost production of silicon of suitable purity to be used as the basic material for the manufacture of terrestrial photovoltaic solar cells. Summarized are 11 different processes for the production of silicon that were investigated and developed to varying extent by industrial, university, and Government researchers. The silane production section of the Union Carbide Corp. (UCC) silane process was developed completely in this program. Coupled with Siemens-type chemical vapor deposition reactors, the process was carried through the pilot stage. The overall UCC process involves the conversion of metallurgical-grade silicon to silane followed by decomposition of the silane to purified silicon. The other process developments are described to varying extents. Studies are reported on the effects of impurities in silicon on both silicon-material properties and on solar cell performance. These studies on the effects of impurities yielded extensive information and models for relating specific elemental concentrations to levels of deleterious effects.

  2. Flat-plate solar array project. Volume 2: Silicon material

    Science.gov (United States)

    Lutwack, R.

    1986-01-01

    The goal of the Silicon Material Task, a part of the Flat Plate Solar Array (FSA) Project, was to develop and demonstate the technology for the low cost production of silicon of suitable purity to be used as the basic material for the manufacture of terrestrial photovoltaic solar cells. Summarized are 11 different processes for the production of silicon that were investigated and developed to varying extent by industrial, university, and Government researchers. The silane production section of the Union Carbide Corp. (UCC) silane process was developed completely in this program. Coupled with Siemens-type chemical vapor deposition reactors, the process was carried through the pilot stage. The overall UCC process involves the conversion of metallurgical-grade silicon to silane followed by decomposition of the silane to purified silicon. The other process developments are described to varying extents. Studies are reported on the effects of impurities in silicon on both silicon-material properties and on solar cell performance. These studies on the effects of impurities yielded extensive information and models for relating specific elemental concentrations to levels of deleterious effects.

  3. Flat-plate solar array project. Volume 3: Silicon sheet: Wafers and ribbons

    Science.gov (United States)

    Briglio, A.; Dumas, K.; Leipold, M.; Morrison, A.

    1986-01-01

    The primary objective of the Silicon Sheet Task of the Flat-Plate Solar Array (FSA) Project was the development of one or more low cost technologies for producing silicon sheet suitable for processing into cost-competitive solar cells. Silicon sheet refers to high purity crystalline silicon of size and thickness for fabrication into solar cells. Areas covered in the project were ingot growth and casting, wafering, ribbon growth, and other sheet technologies. The task made and fostered significant improvements in silicon sheet including processing of both ingot and ribbon technologies. An additional important outcome was the vastly improved understanding of the characteristics associated with high quality sheet, and the control of the parameters required for higher efficiency solar cells. Although significant sheet cost reductions were made, the technology advancements required to meet the task cost goals were not achieved.

  4. Electricity from photovoltaic solar cells: Flat-Plate Solar Array Project final Report. Volume II: Silicon material

    OpenAIRE

    Lutwack, R.

    1986-01-01

    The Flat-Plate Solar Array (FSA) Project, funded by the U.S. Government and managed by the Jet Propulsion Laboratory, was formed in 1975 to develop the module/array technology needed to attain widespread terrestrial use of photovoltaics by 1985. To accomplish this, the FSA Project established and managed an Industry, University, and Federal Government Team to perform the needed research and development. The goal of the Silicon Material Task, a part of the FSA Project, was to develop and ...

  5. Micropatterned arrays of porous silicon: toward sensory biointerfaces.

    Science.gov (United States)

    Flavel, Benjamin S; Sweetman, Martin J; Shearer, Cameron J; Shapter, Joseph G; Voelcker, Nicolas H

    2011-07-01

    We describe the fabrication of arrays of porous silicon spots by means of photolithography where a positive photoresist serves as a mask during the anodization process. In particular, photoluminescent arrays and porous silicon spots suitable for further chemical modification and the attachment of human cells were created. The produced arrays of porous silicon were chemically modified by means of a thermal hydrosilylation reaction that facilitated immobilization of the fluorescent dye lissamine, and alternatively, the cell adhesion peptide arginine-glycine-aspartic acid-serine. The latter modification enabled the selective attachment of human lens epithelial cells on the peptide functionalized regions of the patterns. This type of surface patterning, using etched porous silicon arrays functionalized with biological recognition elements, presents a new format of interfacing porous silicon with mammalian cells. Porous silicon arrays with photoluminescent properties produced by this patterning strategy also have potential applications as platforms for in situ monitoring of cell behavior.

  6. Silicon Micromachined Microlens Array for THz Antennas

    Science.gov (United States)

    Lee, Choonsup; Chattopadhyay, Goutam; Mehdi, IImran; Gill, John J.; Jung-Kubiak, Cecile D.; Llombart, Nuria

    2013-01-01

    5 5 silicon microlens array was developed using a silicon micromachining technique for a silicon-based THz antenna array. The feature of the silicon micromachining technique enables one to microfabricate an unlimited number of microlens arrays at one time with good uniformity on a silicon wafer. This technique will resolve one of the key issues in building a THz camera, which is to integrate antennas in a detector array. The conventional approach of building single-pixel receivers and stacking them to form a multi-pixel receiver is not suited at THz because a single-pixel receiver already has difficulty fitting into mass, volume, and power budgets, especially in space applications. In this proposed technique, one has controllability on both diameter and curvature of a silicon microlens. First of all, the diameter of microlens depends on how thick photoresist one could coat and pattern. So far, the diameter of a 6- mm photoresist microlens with 400 m in height has been successfully microfabricated. Based on current researchers experiences, a diameter larger than 1-cm photoresist microlens array would be feasible. In order to control the curvature of the microlens, the following process variables could be used: 1. Amount of photoresist: It determines the curvature of the photoresist microlens. Since the photoresist lens is transferred onto the silicon substrate, it will directly control the curvature of the silicon microlens. 2. Etching selectivity between photoresist and silicon: The photoresist microlens is formed by thermal reflow. In order to transfer the exact photoresist curvature onto silicon, there needs to be etching selectivity of 1:1 between silicon and photoresist. However, by varying the etching selectivity, one could control the curvature of the silicon microlens. The figure shows the microfabricated silicon microlens 5 x5 array. The diameter of the microlens located in the center is about 2.5 mm. The measured 3-D profile of the microlens surface has a

  7. Characterization of X3 Silicon Detectors for the ELISSA Array at ELI-NP

    Science.gov (United States)

    Chesnevskaya, S.; Balabanski, D. L.; Choudhury, D.; Cognata, M. La; Constantin, P.; Filipescu, D. M.; Ghita, D. G.; Guardo, G. L.; Lattuada, D.; Matei, C.; Rotaru, A.; Spitaleri, C.; State, A.; Xu, Y.

    2018-01-01

    Position-sensitive silicon strip detectors represent one of the best solutions for the detection of charged particles as they provide good energy and position resolution over a large range of energies. A silicon array coupled with the gamma beams at the ELI-NP facility would allow measuring photodissociation reactions of interest for Big Bang Nucleosynthesis and on heavy nuclei intervening in the p-process. Forty X3 detectors for our ELISSA (ELI-NP Silicon Strip Detectors Array) project have been recently purchased and tested. We investigated several specifications, such as leakage currents, depletion voltage, and detector stability under vacuum. The energy and position resolution, and ballistic deficit were measured and analyzed. This paper presents the main results of our extensive testing. The measured energy resolution for the X3 detectors is better than results published for similar arrays (ANASEN or ORRUBA).

  8. Nanoparticle sorting in silicon waveguide arrays

    Science.gov (United States)

    Zhao, H. T.; Zhang, Y.; Chin, L. K.; Yap, P. H.; Wang, K.; Ser, W.; Liu, A. Q.

    2017-08-01

    This paper presents the optical fractionation of nanoparticles in silicon waveguide arrays. The optical lattice is generated by evanescent coupling in silicon waveguide arrays. The hotspot size is tunable by changing the refractive index of surrounding liquids. In the experiment, 0.2-μm and 0.5-μm particles are separated with a recovery rate of 95.76%. This near-field approach is a promising candidate for manipulating nanoscale biomolecules and is anticipated to benefit the biomedical applications such as exosome purification, DNA optical mapping, cell-cell interaction, etc.

  9. Proceedings of the Flat-Plate Solar Array Project Workshop on Crystal Gowth for High-Efficiency Silicon Solar Cells

    Science.gov (United States)

    Dumas, K. A. (Editor)

    1985-01-01

    A Workshop on Crystal Growth for High-Efficiency Silicon Solar Cells was held December 3 and 4, 1984, in San Diego, California. The Workshop offered a day and a half of technical presentations and discussions and an afternoon session that involved a panel discussion and general discussion of areas of research that are necessary to the development of materials for high-efficiency solar cells. Topics included the theoretical and experimental aspects of growing high-quality silicon crystals, the effects of growth-process-related defects on photovoltaic devices, and the suitability of various growth technologies as cost-effective processes. Fifteen invited papers were presented, with a discussion period following each presentation. The meeting was organized by the Flat-Plate Solar Array Project of the Jet Propulsion Laboratory. These Proceedings are a record of the presentations and discussions, edited for clarity and continuity.

  10. Silicon-CsI detector array for heavy-ion reactions

    CERN Document Server

    Norbeck, E; Pogodin, P I; Cheng, Y W; Ingram, F D; Bjarki, O; Grévy, S; Magestro, D J; Molen, A M V; Westfall, G D

    2000-01-01

    An array of 60 silicon-CsI(Tl) detector telescopes has been developed along with associated electronics. The close packing of the telescopes required novel designs for the photodiodes and the silicon DELTA E detectors. Newly developed electronics include preamplifiers, shaping amplifiers, test pulse circuitry, and a module to monitor leakage currents in the silicon diodes. The array covers angles from 5 deg. to 18 deg. in the 4 pi Array at the National Superconducting Cyclotron Laboratory at Michigan State University. It measures protons to 150 MeV and has isotopic resolution for intermediate mass nuclei.

  11. Low-Cost Solar Array Project. Progress report 12, January-April 1979 and proceedings of the 12th Project Integration Meeting

    Energy Technology Data Exchange (ETDEWEB)

    1979-01-01

    This report describes progress made by the Low-Cost Solar Array Project during the period January through April 1979. It includes reports on project analysis and integration; technology development in silicon material, large-area sheet silicon, and encapsulation; production process and equipment development; engineering and operations, and a discussion of the steps taken to integrate these efforts. It includes a report on, and copies of viewgraphs presented at the Project Integration Meeting held April 4-5, 1979.

  12. Low-Cost Solar Array Project. Progress report 14, August 1979-December 1979 and proceedings of the 14th Project Integration Meeting

    Energy Technology Data Exchange (ETDEWEB)

    1980-01-01

    Progress made by the Low-Cost Solar Array Project during the period August through November 1979, is described. Progress on project analysis and integration; technology development in silicon material, large-area sheet silicon, and encapsulation; production process and equipment development; engineering, and operations, and the steps taken to integrate these efforts are detailed. A report on the Project Integration Meeting held December 5-6, 1979, including copies of the visual materials used, is presented.

  13. Composite silicon nanostructure arrays fabricated on optical fibre by chemical etching of multicrystal silicon film

    International Nuclear Information System (INIS)

    Zuo, Zewen; Zhu, Kai; Ning, Lixin; Cui, Guanglei; Qu, Jun; Huang, Wanxia; Shi, Yi; Liu, Hong

    2015-01-01

    Integrating nanostructures onto optical fibers presents a promising strategy for developing new-fashioned devices and extending the scope of nanodevices’ applications. Here we report the first fabrication of a composite silicon nanostructure on an optical fiber. Through direct chemical etching using an H 2 O 2 /HF solution, multicrystal silicon films with columnar microstructures are etched into a vertically aligned, inverted-cone-like nanorod array embedded in a nanocone array. A faster dissolution rate of the silicon at the void-rich boundary regions between the columns is found to be responsible for the separation of the columns, and thus the formation of the nanostructure array. The morphology of the nanorods primarily depends on the microstructure of the columns in the film. Through controlling the microstructure of the as-grown film and the etching parameters, the structural control of the nanostructure is promising. This fabrication method can be extended to a larger length scale, and it even allows roll-to-roll processing. (paper)

  14. Composite silicon nanostructure arrays fabricated on optical fibre by chemical etching of multicrystal silicon film.

    Science.gov (United States)

    Zuo, Zewen; Zhu, Kai; Ning, Lixin; Cui, Guanglei; Qu, Jun; Huang, Wanxia; Shi, Yi; Liu, Hong

    2015-04-17

    Integrating nanostructures onto optical fibers presents a promising strategy for developing new-fashioned devices and extending the scope of nanodevices' applications. Here we report the first fabrication of a composite silicon nanostructure on an optical fiber. Through direct chemical etching using an H2O2/HF solution, multicrystal silicon films with columnar microstructures are etched into a vertically aligned, inverted-cone-like nanorod array embedded in a nanocone array. A faster dissolution rate of the silicon at the void-rich boundary regions between the columns is found to be responsible for the separation of the columns, and thus the formation of the nanostructure array. The morphology of the nanorods primarily depends on the microstructure of the columns in the film. Through controlling the microstructure of the as-grown film and the etching parameters, the structural control of the nanostructure is promising. This fabrication method can be extended to a larger length scale, and it even allows roll-to-roll processing.

  15. Multifunctional porous silicon nanopillar arrays: antireflection, superhydrophobicity, photoluminescence, and surface-enhanced Raman scattering

    International Nuclear Information System (INIS)

    Kiraly, Brian; Yang, Shikuan; Huang, Tony Jun

    2013-01-01

    We have fabricated porous silicon nanopillar arrays over large areas with a rapid, simple, and low-cost technique. The porous silicon nanopillars show unique longitudinal features along their entire length and have porosity with dimensions on the single-nanometer scale. Both Raman spectroscopy and photoluminescence data were used to determine the nanocrystallite size to be <3 nm. The porous silicon nanopillar arrays also maintained excellent ensemble properties, reducing reflection nearly fivefold from planar silicon in the visible range without any optimization, and approaching superhydrophobic behavior with increasing aspect ratio, demonstrating contact angles up to 138°. Finally, the porous silicon nanopillar arrays were made into sensitive surface-enhanced Raman scattering (SERS) substrates by depositing metal onto the pillars. The SERS performance of the substrates was demonstrated using a chemical dye Rhodamine 6G. With their multitude of properties (i.e., antireflection, superhydrophobicity, photoluminescence, and sensitive SERS), the porous silicon nanopillar arrays described here can be valuable in applications such as solar harvesting, electrochemical cells, self-cleaning devices, and dynamic biological monitoring. (paper)

  16. Summary of flat-plate solar array project documentation: Abstracts of published documents, 1975-1986, revision 1

    Science.gov (United States)

    Phillips, M. J.

    1986-01-01

    Abstracts of final reports, or the latest quarterly or annual, of the Flat-Plate Solar Array (FSA) Project Contractor of Jet Propulsion Laboratory (JPL) in-house activities are presented. Also presented is a list of proceedings and publications, by author, of work connected with the project. The aim of the program has been to stimulate the development of technology that will enable the private sector to manufacture and widely use photovoltaic systems for the generation of electricity in residential, commercial, industrial, and Government applications at a cost per watt that is competitive with utility generated power. FSA Project activities have included the sponsoring of research and development efforts in silicon refinement processes, advanced silicon sheet growth techniques, higher efficiency solar cells, solar cell/module fabrication processes, encapsulation, module/array engineering and reliability, and economic analyses.

  17. Silicon materials task of the Low Cost Solar Array Project: Effect of impurities and processing on silicon solar cells

    Science.gov (United States)

    Hopkins, R. H.; Davis, J. R.; Rohatgi, A.; Hanes, M. H.; Rai-Choudhury, P.; Mollenkopf, H. C.

    1982-01-01

    The effects of impurities and processing on the characteristics of silicon and terrestrial silicon solar cells were defined in order to develop cost benefit relationships for the use of cheaper, less pure solar grades of silicon. The amount of concentrations of commonly encountered impurities that can be tolerated in typical p or n base solar cells was established, then a preliminary analytical model from which the cell performance could be projected depending on the kinds and amounts of contaminants in the silicon base material was developed. The impurity data base was expanded to include construction materials, and the impurity performace model was refined to account for additional effects such as base resistivity, grain boundary interactions, thermal processing, synergic behavior, and nonuniform impurity distributions. A preliminary assessment of long term (aging) behavior of impurities was also undertaken.

  18. Microfabricated Silicon Microneedle Array for Transdermal Drug Delivery

    International Nuclear Information System (INIS)

    Ji, J; Tay, F E; Miao Jianmin; Iliescu, C

    2006-01-01

    This paper presents developed processes for silicon microneedle arrays microfabrication. Three types of microneedles structures were achieved by isotropic etching in inductively coupled plasma (ICP) using SF 6 /O 2 gases, combination of isotropic etching with deep etching, and wet etching, respectively. A microneedle array with biodegradable porous tips was further developed based on the fabricated microneedles

  19. Microfabricated Silicon Microneedle Array for Transdermal Drug Delivery

    Energy Technology Data Exchange (ETDEWEB)

    Ji, J [Mechanical Engineering National University of Singapore, 119260, Singapore (Singapore); Tay, F E [Mechanical Engineering National University of Singapore, 119260, Singapore (Singapore); Miao Jianmin [MicroMachines Center, School of Mechanical and Aerospace Engineering, Nanyang Technological University, 50 Nanyang Avenue, 639798 (Singapore); Iliescu, C [Institute of Bioengineering and Nanotechnology, 31 Biopolis Way, Nanos, 04-01, 138669 (Singapore)

    2006-04-01

    This paper presents developed processes for silicon microneedle arrays microfabrication. Three types of microneedles structures were achieved by isotropic etching in inductively coupled plasma (ICP) using SF{sub 6}/O{sub 2} gases, combination of isotropic etching with deep etching, and wet etching, respectively. A microneedle array with biodegradable porous tips was further developed based on the fabricated microneedles.

  20. Low Cost Solar Array Project. Feasibility of the silane process for producing semiconductor-grade silicon. Final report, October 1975-March 1979

    Energy Technology Data Exchange (ETDEWEB)

    1979-06-01

    The commercial production of low-cost semiconductor-grade silicon is an essential requirement of the JPL/DOE (Department of Energy) Low-Cost Solar Array (LSA) Project. A 1000-metric-ton-per-year commercial facility using the Union Carbide Silane Process will produce molten silicon for an estimated price of $7.56/kg (1975 dollars, private financing), meeting the DOE goal of less than $10/kg. Conclusions and technology status are reported for both contract phases, which had the following objectives: (1) establish the feasibility of Union Carbide's Silane Process for commercial application, and (2) develop an integrated process design for an Experimental Process System Development Unit (EPSDU) and a commercial facility, and estimate the corresponding commercial plant economic performance. To assemble the facility design, the following work was performed: (a) collection of Union Carbide's applicable background technology; (b) design, assembly, and operation of a small integrated silane-producing Process Development Unit (PDU); (c) analysis, testing, and comparison of two high-temperature methods for converting pure silane to silicon metal; and (d) determination of chemical reaction equilibria and kinetics, and vapor-liquid equilibria for chlorosilanes.

  1. Fabrication of High-Frequency pMUT Arrays on Silicon Substrates

    DEFF Research Database (Denmark)

    Pedersen, Thomas; Zawada, Tomasz; Hansen, Karsten

    2010-01-01

    A novel technique based on silicon micromachining for fabrication of linear arrays of high-frequency piezoelectric micromachined ultrasound transducers (pMUT) is presented. Piezoelectric elements are formed by deposition of lead zirconia titanate into etched features of a silicon substrate...

  2. Light Trapping with Silicon Light Funnel Arrays

    Directory of Open Access Journals (Sweden)

    Ashish Prajapati

    2018-03-01

    Full Text Available Silicon light funnels are three-dimensional subwavelength structures in the shape of inverted cones with respect to the incoming illumination. Light funnel (LF arrays can serve as efficient absorbing layers on account of their light trapping capabilities, which are associated with the presence of high-density complex Mie modes. Specifically, light funnel arrays exhibit broadband absorption enhancement of the solar spectrum. In the current study, we numerically explore the optical coupling between surface light funnel arrays and the underlying substrates. We show that the absorption in the LF array-substrate complex is higher than the absorption in LF arrays of the same height (~10% increase. This, we suggest, implies that a LF array serves as an efficient surface element that imparts additional momentum components to the impinging illumination, and hence optically excites the substrate by near-field light concentration, excitation of traveling guided modes in the substrate, and mode hybridization.

  3. Plasma jet array treatment to improve the hydrophobicity of contaminated HTV silicone rubber

    Science.gov (United States)

    Zhang, Ruobing; Han, Qianting; Xia, Yan; Li, Shuang

    2017-10-01

    An atmospheric-pressure plasma jet array specially designed for HTV silicone rubber treatment is reported in this paper. Stable plasma containing highly energetic active particles was uniformly generated in the plasma jet array. The discharge pattern was affected by the applied voltage. The divergence phenomenon was observed at low gas flow rate and abated when the flow rate increased. Temperature of the plasma plume is close to room temperature which makes it feasible for temperature-sensitive material treatment. Hydrophobicity of contaminated HTV silicone rubber was significantly improved after quick exposure of the plasma jet array, and the effective treatment area reached 120 mm × 50 mm (length × width). Reactive particles in the plasma accelerate accumulation of the hydrophobic molecules, namely low molecular weight silicone chains, on the contaminated surface, which result in a hydrophobicity improvement of the HTV silicone rubber.

  4. Nanofabrication of Arrays of Silicon Field Emitters with Vertical Silicon Nanowire Current Limiters and Self-Aligned Gates

    Science.gov (United States)

    2016-08-19

    limiters, MEMS, NEMS, field emission, cold cathodes (Some figures may appear in colour only in the online journal) 1. Introduction Dense arrays of silicon... attention has been given to densely packed, highly ordered, top-down fabricated, single crystal vertical silicon nanowire devices that are embedded

  5. Quantitative measurements of C-reactive protein using silicon nanowire arrays

    Directory of Open Access Journals (Sweden)

    Min-Ho Lee

    2008-03-01

    Full Text Available Min-Ho Lee, Kuk-Nyung Lee, Suk-Won Jung, Won-Hyo Kim, Kyu-Sik Shin, Woo-Kyeong SeongKorea Electronics Technology Institute, Gyeonggi, KoreaAbstract: A silicon nanowire-based sensor for biological application showed highly desirable electrical responses to either pH changes or receptor-ligand interactions such as protein disease markers, viruses, and DNA hybridization. Furthermore, because the silicon nanowire can display results in real-time, it may possess superior characteristics for biosensing than those demonstrated in previously studied methods. However, despite its promising potential and advantages, certain process-related limitations of the device, due to its size and material characteristics, need to be addressed. In this article, we suggest possible solutions. We fabricated silicon nanowire using a top-down and low cost micromachining method, and evaluate the sensing of molecules after transfer and surface modifications. Our newly designed method can be used to attach highly ordered nanowires to various substrates, to form a nanowire array device, which needs to follow a series of repetitive steps in conventional fabrication technology based on a vapor-liquid-solid (VLS method. For evaluation, we demonstrated that our newly fabricated silicon nanowire arrays could detect pH changes as well as streptavidin-biotin binding events. As well as the initial proof-of-principle studies, C-reactive protein binding was measured: electrical signals were changed in a linear fashion with the concentration (1 fM to 1 nM in PBS containing 1.37 mM of salts. Finally, to address the effects of Debye length, silicon nanowires coupled with antigen proteins underwent electrical signal changes as the salt concentration changed.Keywords: silicon nanowire array, C-reactive protein, vapor-liquid-solid method

  6. Crosstalk analysis of silicon-on-insulator nanowire-arrayed waveguide grating

    International Nuclear Information System (INIS)

    Li Kai-Li; An Jun-Ming; Zhang Jia-Shun; Wang Yue; Wang Liang-Liang; Li Jian-Guang; Wu Yuan-Da; Yin Xiao-Jie; Hu Xiong-Wei

    2016-01-01

    The factors influencing the crosstalk of silicon-on-insulator (SOI) nanowire arrayed waveguide grating (AWG) are analyzed using the transfer function method. The analysis shows that wider and thicker arrayed waveguides, outsider fracture of arrayed waveguide, and larger channel space, could mitigate the deterioration of crosstalk. The SOI nanowire AWGs with different arrayed waveguide widths are fabricated by using deep ultraviolet lithography (DUV) and inductively coupled plasma etching (ICP) technology. The measurement results show that the crosstalk performance is improved by about 7 dB through adopting 800 nm arrayed waveguide width. (paper)

  7. Structure and field emission of graphene layers on top of silicon nanowire arrays

    International Nuclear Information System (INIS)

    Huang, Bohr-Ran; Chan, Hui-Wen; Jou, Shyankay; Chen, Guan-Yu; Kuo, Hsiu-An; Song, Wan-Jhen

    2016-01-01

    Graphical abstract: - Highlights: • We prepared graphene on top of silicon nanowires by transfer-print technique. • Graphene changed from discrete flakes to a continuous by repeated transfer-print. • The triple-layer graphene had high electron field emission due to large edge ratio. - Abstract: Monolayer graphene was grown on copper foils and then transferred on planar silicon substrates and on top of silicon nanowire (SiNW) arrays to form single- to quadruple-layer graphene films. The morphology, structure, and electron field emission (FE) of these graphene films were investigated. The graphene films on the planar silicon substrates were continuous. The single- to triple-layer graphene films on the SiNW arrays were discontinuous and while the quadruple-layer graphene film featured a mostly continuous area. The Raman spectra of the graphene films on the SiNW arrays showed G and G′ bands with a singular-Lorentzian shape together with a weak D band. The D band intensity decreased as the number of graphene layers increased. The FE efficiency of the graphene films on the planar silicon substrates and the SiNW arrays varied with the number of graphene layers. The turn-on field for the single- to quadruple-layer graphene films on planar silicon substrates were 4.3, 3.7, 3.5 and 3.4 V/μm, respectively. The turn-on field for the single- to quadruple-layer graphene films on SiNW arrays decreased to 3.9, 3.3, 3.0 and 3.3 V/μm, respectively. Correlation of the FE with structure and morphology of the graphene films is discussed.

  8. Structure and field emission of graphene layers on top of silicon nanowire arrays

    Energy Technology Data Exchange (ETDEWEB)

    Huang, Bohr-Ran; Chan, Hui-Wen [Graduate Institute of Electro-Optical Engineering and Department of Electronic Engineering, National Taiwan University of Science and Technology, Taipei 106, Taiwan (China); Jou, Shyankay, E-mail: sjou@mail.ntust.edu.tw [Department of Materials Science and Engineering, National Taiwan University of Science and Technology, Taipei 106, Taiwan (China); Chen, Guan-Yu [Graduate Institute of Electro-Optical Engineering and Department of Electronic Engineering, National Taiwan University of Science and Technology, Taipei 106, Taiwan (China); Kuo, Hsiu-An; Song, Wan-Jhen [Department of Materials Science and Engineering, National Taiwan University of Science and Technology, Taipei 106, Taiwan (China)

    2016-01-30

    Graphical abstract: - Highlights: • We prepared graphene on top of silicon nanowires by transfer-print technique. • Graphene changed from discrete flakes to a continuous by repeated transfer-print. • The triple-layer graphene had high electron field emission due to large edge ratio. - Abstract: Monolayer graphene was grown on copper foils and then transferred on planar silicon substrates and on top of silicon nanowire (SiNW) arrays to form single- to quadruple-layer graphene films. The morphology, structure, and electron field emission (FE) of these graphene films were investigated. The graphene films on the planar silicon substrates were continuous. The single- to triple-layer graphene films on the SiNW arrays were discontinuous and while the quadruple-layer graphene film featured a mostly continuous area. The Raman spectra of the graphene films on the SiNW arrays showed G and G′ bands with a singular-Lorentzian shape together with a weak D band. The D band intensity decreased as the number of graphene layers increased. The FE efficiency of the graphene films on the planar silicon substrates and the SiNW arrays varied with the number of graphene layers. The turn-on field for the single- to quadruple-layer graphene films on planar silicon substrates were 4.3, 3.7, 3.5 and 3.4 V/μm, respectively. The turn-on field for the single- to quadruple-layer graphene films on SiNW arrays decreased to 3.9, 3.3, 3.0 and 3.3 V/μm, respectively. Correlation of the FE with structure and morphology of the graphene films is discussed.

  9. Extended Hubbard model for mesoscopic transport in donor arrays in silicon

    Science.gov (United States)

    Le, Nguyen H.; Fisher, Andrew J.; Ginossar, Eran

    2017-12-01

    Arrays of dopants in silicon are promising platforms for the quantum simulation of the Fermi-Hubbard model. We show that the simplest model with only on-site interaction is insufficient to describe the physics of an array of phosphorous donors in silicon due to the strong intersite interaction in the system. We also study the resonant tunneling transport in the array at low temperature as a mean of probing the features of the Hubbard physics, such as the Hubbard bands and the Mott gap. Two mechanisms of localization which suppresses transport in the array are investigated: The first arises from the electron-ion core attraction and is significant at low filling; the second is due to the sharp oscillation in the tunnel coupling caused by the intervalley interference of the donor electron's wave function. This disorder in the tunnel coupling leads to a steep exponential decay of conductance with channel length in one-dimensional arrays, but its effect is less prominent in two-dimensional ones. Hence, it is possible to observe resonant tunneling transport in a relatively large array in two dimensions.

  10. Determination of parameters for successful spray coating of silicon microneedle arrays.

    Science.gov (United States)

    McGrath, Marie G; Vrdoljak, Anto; O'Mahony, Conor; Oliveira, Jorge C; Moore, Anne C; Crean, Abina M

    2011-08-30

    Coated microneedle patches have demonstrated potential for effective, minimally invasive, drug and vaccine delivery. To facilitate cost-effective, industrial-scale production of coated microneedle patches, a continuous coating method which utilises conventional pharmaceutical processes is an attractive prospect. Here, the potential of spray-coating silicon microneedle patches using a conventional film-coating process was evaluated and the key process parameters which impact on coating coalescence and weight were identified by employing a fractional factorial design to coat flat silicon patches. Processing parameters analysed included concentration of coating material, liquid input rate, duration of spraying, atomisation air pressure, gun-to-surface distance and air cap setting. Two film-coating materials were investigated; hydroxypropylmethylcellulose (HPMC) and carboxymethylcellulose (CMC). HPMC readily formed a film-coat on silicon when suitable spray coating parameter settings were determined. CMC films required the inclusion of a surfactant (1%, w/w Tween 80) to facilitate coalescence of the sprayed droplets on the silicon surface. Spray coating parameters identified by experimental design, successfully coated 280μm silicon microneedle arrays, producing an intact film-coat, which follows the contours of the microneedle array without occlusion of the microneedle shape. This study demonstrates a novel method of coating microneedle arrays with biocompatible polymers using a conventional film-coating process. It is the first study to indicate the thickness and roughness of coatings applied to microneedle arrays. The study also highlights the importance of identifying suitable processing parameters when film coating substrates of micron dimensions. The ability of a fractional factorial design to identify these critical parameters is also demonstrated. The polymer coatings applied in this study can potentially be drug loaded for intradermal drug and vaccine delivery

  11. Active phase correction of high resolution silicon photonic arrayed waveguide gratings.

    Science.gov (United States)

    Gehl, M; Trotter, D; Starbuck, A; Pomerene, A; Lentine, A L; DeRose, C

    2017-03-20

    Arrayed waveguide gratings provide flexible spectral filtering functionality for integrated photonic applications. Achieving narrow channel spacing requires long optical path lengths which can greatly increase the footprint of devices. High index contrast waveguides, such as those fabricated in silicon-on-insulator wafers, allow tight waveguide bends which can be used to create much more compact designs. Both the long optical path lengths and the high index contrast contribute to significant optical phase error as light propagates through the device. Therefore, silicon photonic arrayed waveguide gratings require active or passive phase correction following fabrication. Here we present the design and fabrication of compact silicon photonic arrayed waveguide gratings with channel spacings of 50, 10 and 1 GHz. The largest device, with 11 channels of 1 GHz spacing, has a footprint of only 1.1 cm2. Using integrated thermo-optic phase shifters, the phase error is actively corrected. We present two methods of phase error correction and demonstrate state-of-the-art cross-talk performance for high index contrast arrayed waveguide gratings. As a demonstration of possible applications, we perform RF channelization with 1 GHz resolution. Additionally, we generate unique spectral filters by applying non-zero phase offsets calculated by the Gerchberg Saxton algorithm.

  12. High density micro-pyramids with silicon nanowire array for photovoltaic applications

    International Nuclear Information System (INIS)

    Rahman, Tasmiat; Navarro-Cía, Miguel; Fobelets, Kristel

    2014-01-01

    We use a metal assisted chemical etch process to fabricate silicon nanowire arrays (SiNWAs) onto a dense periodic array of pyramids that are formed using an alkaline etch masked with an oxide layer. The hybrid micro-nano structure acts as an anti-reflective coating with experimental reflectivity below 1% over the visible and near-infrared spectral regions. This represents an improvement of up to 11 and 14 times compared to the pyramid array and SiNWAs on bulk, respectively. In addition to the experimental work, we optically simulate the hybrid structure using a commercial finite difference time domain package. The results of the optical simulations support our experimental work, illustrating a reduced reflectivity in the hybrid structure. The nanowire array increases the absorbed carrier density within the pyramid by providing a guided transition of the refractive index along the light path from air into the silicon. Furthermore, electrical simulations which take into account surface and Auger recombination show an efficiency increase for the hybrid structure of 56% over bulk, 11% over pyramid array and 8.5% over SiNWAs. (paper)

  13. The Argonne silicon strip-detector array

    Energy Technology Data Exchange (ETDEWEB)

    Wuosmaa, A H; Back, B B; Betts, R R; Freer, M; Gehring, J; Glagola, B G; Happ, Th; Henderson, D J; Wilt, P [Argonne National Lab., IL (United States); Bearden, I G [Purdue Univ., Lafayette, IN (United States). Dept. of Physics

    1992-08-01

    Many nuclear physics experiments require the ability to analyze events in which large numbers of charged particles are detected and identified simultaneously, with good resolution and high efficiency, either alone, or in coincidence with gamma rays. The authors have constructed a compact large-area detector array to measure these processes efficiently and with excellent energy resolution. The array consists of four double-sided silicon strip detectors, each 5x5 cm{sup 2} in area, with front and back sides divided into 16 strips. To exploit the capability of the device fully, a system to read each strip-detector segment has been designed and constructed, based around a custom-built multi-channel preamplifier. The remainder of the system consists of high-density CAMAC modules, including multi-channel discriminators, charge-sensing analog-to-digital converters, and time-to-digital converters. The array`s performance has been evaluated using alpha-particle sources, and in a number of experiments conducted at Argonne and elsewhere. Energy resolutions of {Delta}E {approx} 20-30 keV have been observed for 5 to 8 MeV alpha particles, as well as time resolutions {Delta}T {<=} 500 ps. 4 figs.

  14. The Use of Self-scanned Silicon Photodiode Arrays for Astronomical Spectrophotometry

    Science.gov (United States)

    Cochran, A. L.

    1984-01-01

    The use of a Reticon self scanned silicon photodiode array for precision spectrophotometry is discussed. It is shown that internal errors are + or - 0.003 mag. Observations obtained with a photodiode array are compared with observations obtained with other types of detectors with agreement, from 3500 A to 10500 A, of 1%. The photometric properties of self scanned photodiode arrays are discussed. Potential pitfalls are given.

  15. Cobalt nanosheet arrays supported silicon film as anode materials for lithium ion batteries

    International Nuclear Information System (INIS)

    Huang, X.H.; Wu, J.B.; Cao, Y.Q.; Zhang, P.; Lin, Y.; Guo, R.Q.

    2016-01-01

    Cobalt nanosheet arrays supported silicon film is prepared and used as anode materials for lithium ion batteries. The film is fabricated using chemical bath deposition, hydrogen reduction and radio-frequency magnetron sputtering techniques. The microstructure and morphology are characterized by means of scanning electron microscopy (SEM), transmission electron microscopy (TEM) and energy dispersive spectroscopy (EDS). In this composite film, the silicon layer is supported by interconnected aligned cobalt nanosheet arrays that act as the three-dimensional current collector and buffering network. The electrochemical performance as anode materials for lithium ion batteries is investigated by cyclic voltammetry (CV) and galvanostatic charge-discharge tests. The results show that the film prepared by sputtering for 1500 s exhibits high capacity, good rate capability and stable cycle ability. It is believed that the cobalt nanosheet arrays play important roles in the electrochemical performance of the silicon layer.

  16. Formation of a silicon micropore array of a two-dimension electron multiplier by photo electrochemical etching

    International Nuclear Information System (INIS)

    Gao Yanjun; Duanmu Qingduo; Wang Guozheng; Li Ye; Tian Jingquan

    2009-01-01

    A semiconductor PEC etching method is applied to fabricate the n-type silicon deep micropore channel array. In this method, it is important to arrange the direction of the micropore array along the crystal orientation of the Si substrate. Otherwise, serious lateral erosion will happen. The etching process is also relative to the light intensity and HF concentration. 5% HF concentration and 10-15 cm distance between the light source and the silicon wafer are demonstrated to be the best in our experiments. The n-type silicon deep micropore channel array with aperture of 3 μm and aspect ratio of 40-60, whose inner walls are smooth, is finally obtained.

  17. The oxidized porous silicon field emission array

    International Nuclear Information System (INIS)

    Smith, D.D.; Demroff, H.P.; Elliott, T.S.; Kasprowicz, T.B.; Lee, B.; Mazumdar, T.K.; McIntyre, P.M.; Pang, Y.; Trost, H.J.

    1993-01-01

    The goal of developing a highly efficient microwave power source has led the authors to investigate new methods of electron field emission. One method presently under consideration involves the use of oxidized porous silicon thin films. The authors have used this technology to fabricate the first working field emission arrays from this substance. This approach reduces the diameter of an individual emitter to the nanometer scale. Tests of the first samples are encouraging, with extracted electron currents to nearly 1 mA resulting from less than 20 V of pulsed DC gate voltage. Modulated emission at 5 MHz was also observed. Developments of a full-scale emission array capable of delivering an electron beam at 18 GHz of minimum density 100 A/cm 2 is in progress

  18. Large-area 2D periodic crystalline silicon nanodome arrays on nanoimprinted glass exhibiting photonic band structure effects

    International Nuclear Information System (INIS)

    Becker, C; Lockau, D; Sontheimer, T; Rech, B; Schubert-Bischoff, P; Rudigier-Voigt, E; Bockmeyer, M; Schmidt, F

    2012-01-01

    Two-dimensional silicon nanodome arrays are prepared on large areas up to 50 cm 2 exhibiting photonic band structure effects in the near-infrared and visible wavelength region by downscaling a recently developed fabrication method based on nanoimprint-patterned glass, high-rate electron-beam evaporation of silicon, self-organized solid phase crystallization and wet-chemical etching. The silicon nanodomes, arranged in square lattice geometry with 300 nm lattice constant, are optically characterized by angular resolved reflection measurements, allowing the partial determination of the photonic band structure. This experimentally determined band structure agrees well with the outcome of three-dimensional optical finite-element simulations. A 16% photonic bandgap is predicted for an optimized geometry of the silicon nanodome arrays. By variation of the duration of the selective etching step, the geometry as well as the optical properties of the periodic silicon nanodome arrays can be controlled systematically. (paper)

  19. Surface Plasmon Enhanced Light Trapping in Metal/Silicon Nanobowl Arrays for Thin Film Photovoltaics

    Directory of Open Access Journals (Sweden)

    Ruinan Sun

    2017-01-01

    Full Text Available Enhancing the light absorption in thin film silicon solar cells with nanophotonic and plasmonic structures is important for the realization of high efficiency solar cells with significant cost reduction. In this work, we investigate periodic arrays of conformal metal/silicon nanobowl arrays (MSNBs for light trapping applications in silicon solar cells. They exhibited excellent light-harvesting ability across a wide range of wavelengths up to infrared regimes. The optimized structure (MSNBsH covered by SiO2 passivation layer and hemisphere Ag back reflection layer has a maximal short-circuit density (Jsc 25.5 mA/cm2, which is about 88.8% higher than flat structure counterpart, and the light-conversion efficiency (η is increased two times from 6.3% to 12.6%. The double-side textures offer a promising approach to high efficiency ultrathin silicon solar cells.

  20. The Expanded Very Large Array Project

    Science.gov (United States)

    Perley, Rick

    2012-10-01

    The Expanded Very Large Array Project, begun in 2001, is now completed -- on time, on budget, and ``on spec.'' The major goal of the project was to multiply the key observational capabilities of the Very Large Array -- the world's most powerful, versatile, and productive radio telescope -- by a factor of at least an order of magnitude by implementation of modern technologies. The result of the project is an operationally new telescope -- renamed the Jansky Very Large Array -- which is capable of new science unimagined in 1980, when the original VLA was completed. In this talk, I will review the goals of the project, and describe the new capabilities of the Jansky Very Large Array. Already, the array is providing fabulous new insights into the physics of the universe,and I will spend the majority of the time describing examples of new results.

  1. Laser desorption ionization and peptide sequencing on laser induced silicon microcolumn arrays

    Science.gov (United States)

    Vertes, Akos [Reston, VA; Chen, Yong [San Diego, CA

    2011-12-27

    The present invention provides a method of producing a laser-patterned silicon surface, especially silicon wafers for use in laser desorption ionization (LDI-MS) (including MALDI-MS and SELDI-MS), devices containing the same, and methods of testing samples employing the same. The surface is prepared by subjecting a silicon substrate to multiple laser shots from a high-power picosecond or femtosecond laser while in a processing environment, e.g., underwater, and generates a remarkable homogenous microcolumn array capable of providing an improved substrate for LDI-MS.

  2. Simple, Fast, and Cost-Effective Fabrication of Wafer-Scale Nanohole Arrays on Silicon for Antireflection

    Directory of Open Access Journals (Sweden)

    Di Di

    2014-01-01

    Full Text Available A simple, fast, and cost-effective method was developed in this paper for the high-throughput fabrication of nanohole arrays on silicon (Si, which is utilized for antireflection. Wafer-scale polystyrene (PS monolayer colloidal crystal was developed as templates by spin-coating method. Metallic shadow mask was prepared by lifting off the oxygen etched PS beads from the deposited chromium film. Nanohole arrays were fabricated by Si dry etching. A series of nanohole arrays were fabricated with the similar diameter but with different depth. It is found that the maximum depth of the Si-hole was determined by the diameter of the Cr-mask. The antireflection ability of these Si-hole arrays was investigated. The results show that the reflection decreases with the depth of the Si-hole. The deepest Si-hole arrays show the best antireflection ability (reflection 600 nm, which was about 28 percent of the nonpatterned silicon wafer’s reflection. The proposed method has the potential for high-throughput fabrication of patterned Si wafer, and the low reflectivity allows the application of these wafers in crystalline silicon solar cells.

  3. MUST: A silicon strip detector array for radioactive beam experiments

    International Nuclear Information System (INIS)

    Blumenfeld, Y.; Auger, F.; Sauvestre, J.E.; Marechal, F.; Ottini, S.; Alamanos, N.; Barbier, A.; Beaumel, D.; Bonnereau, B.; Charlet, D.; Clavelin, J.F.; Courtat, P.; Delbourgo-Salvador, P.; Douet, R.; Engrand, M.; Ethvignot, T.; Gillibert, A.; Khan, E.; Lapoux, V.; Lagoyannis, A.; Lavergne, L.; Lebon, S.; Lelong, P.; Lesage, A.; Le Ven, V.; Lhenry, I.; Martin, J.M.; Musumarra, A.; Pita, S.; Petizon, L.; Pollacco, E.; Pouthas, J.; Richard, A.; Rougier, D.; Santonocito, D.; Scarpaci, J.A.; Sida, J.L.; Soulet, C.; Stutzmann, J.S.; Suomijaervi, T.; Szmigiel, M.; Volkov, P.; Voltolini, G.

    1999-01-01

    A new and innovative array, MUST, based on silicon strip technology and dedicated to the study of reactions induced by radioactive beams on light particles is described. The detector consists of 8 silicon strip - Si(Li) telescopes used to identify recoiling light charged particles through time of flight, energy loss and energy measurements and to determine precisely their scattering angle through X, Y position measurements. Each 60x60 mm 2 double sided silicon strip detector with 60 vertical and 60 horizontal strips yields an X-Y position resolution of 1 mm, an energy resolution of 50 keV, a time resolution of around 1 ns and a 500 keV energy threshold for protons. The backing Si(Li) detectors stop protons up to 25 MeV with a resolution of approximately 50 keV. CsI crystals read out by photo-diodes which stop protons up to 70 MeV are added to the telescopes for applications where higher energy particles need to be detected. The dedicated electronics in VXIbus standard allow us to house the 968 logic and analog channels of the array in one crate placed adjacent to the reaction chamber and fully remote controlled, including pulse visualization on oscilloscopes. A stand alone data acquisition system devoted to the MUST array has been developed. Isotope identification of light charged particles over the full energy range has been achieved, and the capability of the system to measure angular distributions of states populated in inverse kinematics reactions has been demonstrated

  4. Materials preparation and fabrication of pyroelectric polymer/silicon MOSFET detector arrays. Final report

    International Nuclear Information System (INIS)

    Bloomfield, P.

    1992-01-01

    The authors have delivered several 64-element linear arrays of pyroelectric elements fully integrated on silicon wafers with MOS readout devices. They have delivered detailed drawings of the linear arrays to LANL. They have processed a series of two inch wafers per submitted design. Each two inch wafer contains two 64 element arrays. After spin-coating copolymer onto the arrays, vacuum depositing the top electrodes, and polarizing the copolymer films so as to make them pyroelectrically active, each wafer was split in half. The authors developed a thicker oxide coating separating the extended gate electrode (beneath the polymer detector) from the silicon. This should reduce its parasitic capacitance and hence improve the S/N. They provided LANL three processed 64 element sensor arrays. Each array was affixed to a connector panel and selected solder pads of the common ground, the common source voltage supply connections, the 64 individual drain connections, and the 64 drain connections (for direct pyroelectric sensing response rather than the MOSFET action) were wire bonded to the connector panel solder pads. This entails (64 + 64 + 1 + 1) = 130 possible bond connections per 64 element array. This report now details the processing steps and the progress of the individual wafers as they were carried through from beginning to end

  5. The fabrication of highly ordered block copolymer micellar arrays: control of the separation distances of silicon oxide dots

    Science.gov (United States)

    Yoo, Hana; Park, Soojin

    2010-06-01

    We demonstrate the fabrication of highly ordered silicon oxide dotted arrays prepared from polydimethylsiloxane (PDMS) filled nanoporous block copolymer (BCP) films and the preparation of nanoporous, flexible Teflon or polyimide films. Polystyrene-block-poly(2-vinylpyridine) (PS-b-P2VP) films were annealed in toluene vapor to enhance the lateral order of micellar arrays and were subsequently immersed in alcohol to produce nano-sized pores, which can be used as templates for filling a thin layer of PDMS. When a thin layer of PDMS was spin-coated onto nanoporous BCP films and thermally annealed at a certain temperature, the PDMS was drawn into the pores by capillary action. PDMS filled BCP templates were exposed to oxygen plasma environments in order to fabricate silicon oxide dotted arrays. By addition of PS homopolymer to PS-b-P2VP copolymer, the separation distances of micellar arrays were tuned. As-prepared silicon oxide dotted arrays were used as a hard master for fabricating nanoporous Teflon or polyimide films by spin-coating polymer precursor solutions onto silicon patterns and peeling off. This simple process enables us to fabricate highly ordered nanoporous BCP templates, silicon oxide dots, and flexible nanoporous polymer patterns with feature size of sub-20 nm over 5 cm × 5 cm.

  6. The fabrication of highly ordered block copolymer micellar arrays: control of the separation distances of silicon oxide dots

    Energy Technology Data Exchange (ETDEWEB)

    Yoo, Hana; Park, Soojin, E-mail: spark@unist.ac.kr [Interdisciplinary School of Green Energy, Ulsan National Institute of Science and Technology, Banyeon-ri 100, Ulsan 689-798 (Korea, Republic of)

    2010-06-18

    We demonstrate the fabrication of highly ordered silicon oxide dotted arrays prepared from polydimethylsiloxane (PDMS) filled nanoporous block copolymer (BCP) films and the preparation of nanoporous, flexible Teflon or polyimide films. Polystyrene-block-poly(2-vinylpyridine) (PS-b-P2VP) films were annealed in toluene vapor to enhance the lateral order of micellar arrays and were subsequently immersed in alcohol to produce nano-sized pores, which can be used as templates for filling a thin layer of PDMS. When a thin layer of PDMS was spin-coated onto nanoporous BCP films and thermally annealed at a certain temperature, the PDMS was drawn into the pores by capillary action. PDMS filled BCP templates were exposed to oxygen plasma environments in order to fabricate silicon oxide dotted arrays. By addition of PS homopolymer to PS-b-P2VP copolymer, the separation distances of micellar arrays were tuned. As-prepared silicon oxide dotted arrays were used as a hard master for fabricating nanoporous Teflon or polyimide films by spin-coating polymer precursor solutions onto silicon patterns and peeling off. This simple process enables us to fabricate highly ordered nanoporous BCP templates, silicon oxide dots, and flexible nanoporous polymer patterns with feature size of sub-20 nm over 5 cm x 5 cm.

  7. Formation of array microstructures on silicon by multibeam interfered femtosecond laser pulses

    International Nuclear Information System (INIS)

    Zhao Quanzhong; Qiu Jianrong; Zhao Chongjun; Jiang Xiongwei; Zhu Congshan

    2005-01-01

    We report on an optical interference method to fabricate array microstructures on the surface of silicon wafers by means of five-beam interference of femtosecond laser pulses. Optical microscope and scanning electron microscope observations revealed microstructures with micrometer-order were fabricated. The diffraction characteristics of the fabricated structures were evaluated. The present technique allows one-step realization of functional optoelectronic devices on silicon surface

  8. Nanoscale phosphorus atom arrays created using STM for the fabrication of a silicon based quantum computer.

    Energy Technology Data Exchange (ETDEWEB)

    O' Brien, J. L. (Jeremy L.); Schofield, S. R. (Steven R.); Simmons, M. Y. (Michelle Y.); Clark, R. G. (Robert G.); Dzurak, A. S. (Andrew S.); Curson, N. J. (Neil J.); Kane, B. E. (Bruce E.); McAlpine, N. S. (Neal S.); Hawley, M. E. (Marilyn E.); Brown, G. W. (Geoffrey W.)

    2001-01-01

    Quantum computers offer the promise of formidable computational power for certain tasks. Of the various possible physical implementations of such a device, silicon based architectures are attractive for their scalability and ease of integration with existing silicon technology. These designs use either the electron or nuclear spin state of single donor atoms to store quantum information. Here we describe a strategy to fabricate an array of single phosphorus atoms in silicon for the construction of such a silicon based quantum computer. We demonstrate the controlled placement of single phosphorus bearing molecules on a silicon surface. This has been achieved by patterning a hydrogen mono-layer 'resist' with a scanning tunneling microscope (STM) tip and exposing the patterned surface to phosphine (PH3) molecules. We also describe preliminary studies into a process to incorporate these surface phosphorus atoms into the silicon crystal at the array sites. Keywords: Quantum computing, nanotechriology scanning turincling microscopy, hydrogen lithography

  9. 1366 Project Silicon: Reclaiming US Silicon PV Leadership

    Energy Technology Data Exchange (ETDEWEB)

    Lorenz, Adam [1366 Technologies, Bedford, MA (United States)

    2016-02-16

    1366 Technologies’ Project Silicon addresses two of the major goals of the DOE’s PV Manufacturing Initiative Part 2 program: 1) How to reclaim a strong silicon PV manufacturing presence and; 2) How to lower the levelized cost of electricity (“LCOE”) for solar to $0.05-$0.07/kWh, enabling wide-scale U.S. market adoption. To achieve these two goals, US companies must commercialize disruptive, high-value technologies that are capable of rapid scaling, defensible from foreign competition, and suited for US manufacturing. These are the aims of 1366 Technologies Direct Wafer ™ process. The research conducted during Project Silicon led to the first industrial scaling of 1366’s Direct Wafer™ process – an innovative, US-friendly (efficient, low-labor content) manufacturing process that destroys the main cost barrier limiting silicon PV cost-reductions: the 35-year-old grand challenge of making quality wafers (40% of the cost of modules) without the cost and waste of sawing. The SunPath program made it possible for 1366 Technologies to build its demonstration factory, a key and critical step in the Company’s evolution. The demonstration factory allowed 1366 to build every step of the process flow at production size, eliminating potential risk and ensuring the success of the Company’s subsequent scaling for a 1 GW factory to be constructed in Western New York in 2016 and 2017. Moreover, the commercial viability of the Direct Wafer process and its resulting wafers were established as 1366 formed key strategic partnerships, gained entry into the $8B/year multi-Si wafer market, and installed modules featuring Direct Wafer products – the veritable proving grounds for the technology. The program also contributed to the development of three Generation 3 Direct Wafer furnaces. These furnaces are the platform for copying intelligently and preparing our supply chain – large-scale expansion will not require a bigger machine but more machines. SunPath filled the

  10. Copper nanorod array assisted silicon waveguide polarization beam splitter.

    Science.gov (United States)

    Kim, Sangsik; Qi, Minghao

    2014-04-21

    We present the design of a three-dimensional (3D) polarization beam splitter (PBS) with a copper nanorod array placed between two silicon waveguides. The localized surface plasmon resonance (LSPR) of a metal nanorod array selectively cross-couples transverse electric (TE) mode to the coupler waveguide, while transverse magnetic (TM) mode passes through the original input waveguide without coupling. An ultra-compact and broadband PBS compared to all-dielectric devices is achieved with the LSPR. The output ports of waveguides are designed to support either TM or TE mode only to enhance the extinction ratios. Compared to silver, copper is fully compatible with complementary metal-oxide-semiconductor (CMOS) technology.

  11. Nanophotonic production, modulation and switching of ions by silicon microcolumn arrays

    Science.gov (United States)

    Vertes, Akos; Walker, Bennett N.

    2013-09-10

    The production and use of silicon microcolumn arrays that harvest light from a laser pulse to produce ions are described. The systems of the present invention seem to behave like a quasi-periodic antenna array with ion yields that show profound dependence on the plane of laser light polarization and the angle of incidence. By providing photonic ion sources, this enables enhanced control of ion production on a micro/nano scale and direct integration with miniaturized analytical devices.

  12. Characterization of electronic structures from CdS/Si nanoheterostructure array based on silicon nanoporous pillar array

    Energy Technology Data Exchange (ETDEWEB)

    Li, Yong, E-mail: liyong@pdsu.edu.cn [Department of Physics and Solar Energy Research Center, Pingdingshan University, Pingdingshan 467000 (China); Song, Xiao Yan [Department of Mathematics and Information Science, North China University of Water Resources and Electric Power, Zhengzhou 450045 (China); Song, Yue Li; Ji, Peng Fei; Zhou, Feng Qun; Tian, Ming Li; Huang, Hong Chun [Department of Physics and Solar Energy Research Center, Pingdingshan University, Pingdingshan 467000 (China); Li, Xin Jian [Department of Physics and Laboratory of Material Physics, Zhengzhou University, Zhengzhou 450052 (China)

    2016-02-15

    Highlights: • CdS/Si nanoheterostructure array has been fabricated through a CBD method. • The electronic properties have been investigated by the I–V and C–V techniques. • The onset voltages, characteristic frequency and built-in potential are investigated. • The electronic structures can be tuned through the annealing treatments. - Abstract: The electronic properties of heterostructures are very important to its applications in the field of optoelectronic devices. Understanding and control of electronic properties are very necessary. CdS/Si nanoheterostructure array have been fabricated through growing CdS nanocrystals on the silicon nanoporous pillar array using a chemical bath deposition method. The electronic properties of CdS nanoheterostructure array have been investigated by the current–voltage, complex impedance spectroscopy and capacitance–voltage techniques. The onset voltages, characteristic frequency and built-in potential are gradually increased with increasing the annealing temperature. It is indicated that the electronic structures of CdS/Si nanoheterostructure array can be tuned through the annealing treatments.

  13. Characterization of electronic structures from CdS/Si nanoheterostructure array based on silicon nanoporous pillar array

    International Nuclear Information System (INIS)

    Li, Yong; Song, Xiao Yan; Song, Yue Li; Ji, Peng Fei; Zhou, Feng Qun; Tian, Ming Li; Huang, Hong Chun; Li, Xin Jian

    2016-01-01

    Highlights: • CdS/Si nanoheterostructure array has been fabricated through a CBD method. • The electronic properties have been investigated by the I–V and C–V techniques. • The onset voltages, characteristic frequency and built-in potential are investigated. • The electronic structures can be tuned through the annealing treatments. - Abstract: The electronic properties of heterostructures are very important to its applications in the field of optoelectronic devices. Understanding and control of electronic properties are very necessary. CdS/Si nanoheterostructure array have been fabricated through growing CdS nanocrystals on the silicon nanoporous pillar array using a chemical bath deposition method. The electronic properties of CdS nanoheterostructure array have been investigated by the current–voltage, complex impedance spectroscopy and capacitance–voltage techniques. The onset voltages, characteristic frequency and built-in potential are gradually increased with increasing the annealing temperature. It is indicated that the electronic structures of CdS/Si nanoheterostructure array can be tuned through the annealing treatments.

  14. Micromachined silicon parallel acoustic delay lines as time-delayed ultrasound detector array for real-time photoacoustic tomography

    Science.gov (United States)

    Cho, Y.; Chang, C.-C.; Wang, L. V.; Zou, J.

    2016-02-01

    This paper reports the development of a new 16-channel parallel acoustic delay line (PADL) array for real-time photoacoustic tomography (PAT). The PADLs were directly fabricated from single-crystalline silicon substrates using deep reactive ion etching. Compared with other acoustic delay lines (e.g., optical fibers), the micromachined silicon PADLs offer higher acoustic transmission efficiency, smaller form factor, easier assembly, and mass production capability. To demonstrate its real-time photoacoustic imaging capability, the silicon PADL array was interfaced with one single-element ultrasonic transducer followed by one channel of data acquisition electronics to receive 16 channels of photoacoustic signals simultaneously. A PAT image of an optically-absorbing target embedded in an optically-scattering phantom was reconstructed, which matched well with the actual size of the imaged target. Because the silicon PADL array allows a signal-to-channel reduction ratio of 16:1, it could significantly simplify the design and construction of ultrasonic receivers for real-time PAT.

  15. Micromachined silicon parallel acoustic delay lines as time-delayed ultrasound detector array for real-time photoacoustic tomography

    International Nuclear Information System (INIS)

    Cho, Y; Chang, C-C; Zou, J; Wang, L V

    2016-01-01

    This paper reports the development of a new 16-channel parallel acoustic delay line (PADL) array for real-time photoacoustic tomography (PAT). The PADLs were directly fabricated from single-crystalline silicon substrates using deep reactive ion etching. Compared with other acoustic delay lines (e.g., optical fibers), the micromachined silicon PADLs offer higher acoustic transmission efficiency, smaller form factor, easier assembly, and mass production capability. To demonstrate its real-time photoacoustic imaging capability, the silicon PADL array was interfaced with one single-element ultrasonic transducer followed by one channel of data acquisition electronics to receive 16 channels of photoacoustic signals simultaneously. A PAT image of an optically-absorbing target embedded in an optically-scattering phantom was reconstructed, which matched well with the actual size of the imaged target. Because the silicon PADL array allows a signal-to-channel reduction ratio of 16:1, it could significantly simplify the design and construction of ultrasonic receivers for real-time PAT. (paper)

  16. Effects of pillar height and junction depth on the performance of radially doped silicon pillar arrays for solar energy applications

    NARCIS (Netherlands)

    Elbersen, R.; Vijselaar, Wouter Jan, Cornelis; Tiggelaar, Roald M.; Gardeniers, Johannes G.E.; Huskens, Jurriaan

    2016-01-01

    The effects of pillar height and junction depth on solar cell characteristics are investigated to provide design rules for arrays of such pillars in solar energy applications. Radially doped silicon pillar arrays are fabricated by deep reactive ion etching of silicon substrates followed by the

  17. Silicon photonics fiber-to-the-home transceiver array based on transfer-printing-based integration of III-V photodetectors.

    Science.gov (United States)

    Zhang, Jing; De Groote, Andreas; Abbasi, Amin; Loi, Ruggero; O'Callaghan, James; Corbett, Brian; Trindade, António José; Bower, Christopher A; Roelkens, Gunther

    2017-06-26

    A 4-channel silicon photonics transceiver array for Point-to-Point (P2P) fiber-to-the-home (FTTH) optical networks at the central office (CO) side is demonstrated. A III-V O-band photodetector array was integrated onto the silicon photonic transmitter through transfer printing technology, showing a polarization-independent responsivity of 0.39 - 0.49 A/W in the O-band. The integrated PDs (30 × 40 μm 2 mesa) have a 3 dB bandwidth of 11.5 GHz at -3 V bias. Together with high-speed C-band silicon ring modulators whose bandwidth is up to 15 GHz, operation of the transceiver array at 10 Gbit/s is demonstrated. The use of transfer printing for the integration of the III-V photodetectors allows for an efficient use of III-V material and enables the scalable integration of III-V devices on silicon photonics wafers, thereby reducing their cost.

  18. Infrared LED Array For Silicon Strip Detector Qualification

    CERN Document Server

    Dirkes, Guido; Hartmann, Frank; Heier, Stefan; Schwerdtfeger, Wolfgang; Waldschmitt, M; Weiler, K W; Weseler, Siegfried

    2003-01-01

    The enormous amount of silicon strip detector modules for the CMS tracker requires a test-sytem to allow qualification of each individual detector module and its front-end electronics within minutes. The objective is to test the detector with a physical signal. Signals are generated in the detector by illumination with lightpulses emitted by a LED at 950~nm and with a rise time of 10~ns. In order to avoid a detector moving, an array of 64 LEDs is used, overlaping the complete detector width. The total length of an array is 15~cm. The spot size of an individual LED is controlled by apertures to illuminate about 25 strips. Furthermore it is possible to simulate the high leakage current of irradiated sensors by constant illumination of the sensor. This provides an effective mean to identfy pinholes on a sensor.

  19. Bilayer–metal assisted chemical etching of silicon microwire arrays for photovoltaic applications

    Directory of Open Access Journals (Sweden)

    R. W. Wu

    2016-02-01

    Full Text Available Silicon microwires with lateral dimension from 5 μm to 20 μm and depth as long as 20 μm are prepared by bilayer metal assisted chemical etching (MaCE. A bilayer metal configuration (Metal 1 / Metal 2 was applied to assist etching of Si where metal 1 acts as direct catalyst and metal 2 provides mechanical support. Different metal types were investigated to figure out the influence of metal catalyst on morphology of etched silicon. We find that silicon microwires with vertical side wall are produced when we use Ag/Au bilayer, while cone–like and porous microwires formed when Pt/Au is applied. The different micro-/nano-structures in as-etched silicon are demonstrated to be due to the discrepancy of work function of metal catalyst relative to Si. Further, we constructed a silicon microwire arrays solar cells in a radial p–n junction configurations in a screen printed aluminum paste p–doping process.

  20. Dual-side and three-dimensional microelectrode arrays fabricated from ultra-thin silicon substrates

    International Nuclear Information System (INIS)

    Du, Jiangang; Masmanidis, Sotiris C; Roukes, Michael L

    2009-01-01

    A method for fabricating planar implantable microelectrode arrays was demonstrated using a process that relied on ultra-thin silicon substrates, which ranged in thickness from 25 to 50 µm. The challenge of handling these fragile materials was met via a temporary substrate support mechanism. In order to compensate for putative electrical shielding of extracellular neuronal fields, separately addressable electrode arrays were defined on each side of the silicon device. Deep reactive ion etching was employed to create sharp implantable shafts with lengths of up to 5 mm. The devices were flip-chip bonded onto printed circuit boards (PCBs) by means of an anisotropic conductive adhesive film. This scalable assembly technique enabled three-dimensional (3D) integration through formation of stacks of multiple silicon and PCB layers. Simulations and measurements of microelectrode noise appear to suggest that low impedance surfaces, which could be formed by electrodeposition of gold or other materials, are required to ensure an optimal signal-to-noise ratio as well a low level of interchannel crosstalk

  1. Silicon nanowire arrays as learning chemical vapour classifiers

    International Nuclear Information System (INIS)

    Niskanen, A O; Colli, A; White, R; Li, H W; Spigone, E; Kivioja, J M

    2011-01-01

    Nanowire field-effect transistors are a promising class of devices for various sensing applications. Apart from detecting individual chemical or biological analytes, it is especially interesting to use multiple selective sensors to look at their collective response in order to perform classification into predetermined categories. We show that non-functionalised silicon nanowire arrays can be used to robustly classify different chemical vapours using simple statistical machine learning methods. We were able to distinguish between acetone, ethanol and water with 100% accuracy while methanol, ethanol and 2-propanol were classified with 96% accuracy in ambient conditions.

  2. Surface potential on gold nanodisc arrays fabricated on silicon under light irradiation

    Science.gov (United States)

    Ezaki, Tomotarou; Matsutani, Akihiro; Nishioka, Kunio; Shoji, Dai; Sato, Mina; Okamoto, Takayuki; Isobe, Toshihiro; Nakajima, Akira; Matsushita, Sachiko

    2018-06-01

    This paper proposes Kelvin probe force microscopy (KFM) as a new measurement method of plasmon phenomenon. The surface potential of two arrays, namely, a monomeric array and a tetrameric array, of gold nanodiscs (600 nm diameter) on a silicon substrate fabricated by electron beam lithography was investigated by KFM with the view point of irradiation light wavelength change. In terms of the value of the surface potential, contrasting behaviour, a negative shift in the monomeric disc array and a positive shift in the tetrameric disc array, was observed by light irradiation. This interesting behaviour is thought to be related to a difference in localised plasmons caused by the disc arrangement and was investigated from various viewpoints, including Rayleigh anomalies. Finally, this paper reveals that KFM is powerful not only to investigate the plasmonic behaviour but also to predict the electron transportation.

  3. Synthesis, structure and photoelectrochemical properties of single crystalline silicon nanowire arrays

    International Nuclear Information System (INIS)

    Dalchiele, E.A.; Martin, F.; Leinen, D.; Marotti, R.E.; Ramos-Barrado, J.R.

    2010-01-01

    In the present work, n-type silicon nanowire (n-SiNW) arrays have been synthesized by self-assembly electroless metal deposition (EMD) nanoelectrochemistry. The synthesized n-SiNW arrays have been submitted to scanning electron microscopy (SEM), transmission electron microscopy (TEM), high-resolution transmission electron microscopy (HRTEM), X-ray photoelectron spectroscopy (XPS), and optical studies. Initial probes of the solar device conversion properties and the photovoltaic parameters such as short-circuit current, open-circuit potential, and fill factor of the n-SiNW arrays have been explored using a liquid-junction in a photoelectrochemical (PEC) system under white light. Moreover, a direct comparison between the PEC performance of a polished n-Si(100) and the synthesized n-SiNW array photoelectrodes has been done. The PEC performance was significantly enhanced on the n-SiNWs photoelectrodes compared with that on polished n-Si(100).

  4. Corporate array of micromachined dipoles on silicon wafer for 60 GHz communication systems

    KAUST Repository

    Sallam, M. O.

    2013-03-01

    In this paper, an antenna array operating at 60 GHz and realized on 0.675 mm thick silicon substrate is presented. The array is constructed using four micromachined half-wavelength dipoles fed by a corporate feeding network. Isolation between the antenna array and its feeding network is achieved via a ground plane. This arrangement leads to maximizing the broadside radiation with relatively high front-to-back ratio. Simulations have been carried out using both HFSS and CST, which showed very good agreement. Results reveal that the proposed antenna array has good radiation characteristics, where the directivity, gain, and radiation efficiency are around 10.5 dBi, 9.5 dBi, and 79%, respectively. © 2013 IEEE.

  5. Arrays of suspended silicon nanowires defined by ion beam implantation: mechanical coupling and combination with CMOS technology

    Science.gov (United States)

    Llobet, J.; Rius, G.; Chuquitarqui, A.; Borrisé, X.; Koops, R.; van Veghel, M.; Perez-Murano, F.

    2018-04-01

    We present the fabrication, operation, and CMOS integration of arrays of suspended silicon nanowires (SiNWs). The functional structures are obtained by a top-down fabrication approach consisting in a resistless process based on focused ion beam irradiation, causing local gallium implantation and silicon amorphization, plus selective silicon etching by tetramethylammonium hydroxide, and a thermal annealing process in a boron rich atmosphere. The last step enables the electrical functionality of the irradiated material. Doubly clamped silicon beams are fabricated by this method. The electrical readout of their mechanical response can be addressed by a frequency down-mixing detection technique thanks to an enhanced piezoresistive transduction mechanism. Three specific aspects are discussed: (i) the engineering of mechanically coupled SiNWs, by making use of the nanometer scale overhang that it is inherently-generated with this fabrication process, (ii) the statistical distribution of patterned lateral dimensions when fabricating large arrays of identical devices, and (iii) the compatibility of the patterning methodology with CMOS circuits. Our results suggest that the application of this method to the integration of large arrays of suspended SiNWs with CMOS circuitry is interesting in view of applications such as advanced radio frequency band pass filters and ultra-high-sensitivity mass sensors.

  6. MUST: A silicon strip detector array for radioactive beam experiments

    CERN Document Server

    Blumenfeld, Y; Sauvestre, J E; Maréchal, F; Ottini, S; Alamanos, N; Barbier, A; Beaumel, D; Bonnereau, B; Charlet, D; Clavelin, J F; Courtat, P; Delbourgo-Salvador, P; Douet, R; Engrand, M; Ethvignot, T; Gillibert, A; Khan, E; Lapoux, V; Lagoyannis, A; Lavergne, L; Lebon, S; Lelong, P; Lesage, A; Le Ven, V; Lhenry, I; Martin, J M; Musumarra, A; Pita, S; Petizon, L; Pollacco, E; Pouthas, J; Richard, A; Rougier, D; Santonocito, D; Scarpaci, J A; Sida, J L; Soulet, C; Stutzmann, J S; Suomijärvi, T; Szmigiel, M; Volkov, P; Voltolini, G

    1999-01-01

    A new and innovative array, MUST, based on silicon strip technology and dedicated to the study of reactions induced by radioactive beams on light particles is described. The detector consists of 8 silicon strip - Si(Li) telescopes used to identify recoiling light charged particles through time of flight, energy loss and energy measurements and to determine precisely their scattering angle through X, Y position measurements. Each 60x60 mm sup 2 double sided silicon strip detector with 60 vertical and 60 horizontal strips yields an X-Y position resolution of 1 mm, an energy resolution of 50 keV, a time resolution of around 1 ns and a 500 keV energy threshold for protons. The backing Si(Li) detectors stop protons up to 25 MeV with a resolution of approximately 50 keV. CsI crystals read out by photo-diodes which stop protons up to 70 MeV are added to the telescopes for applications where higher energy particles need to be detected. The dedicated electronics in VXIbus standard allow us to house the 968 logic and a...

  7. Dark noise rates in irradiated silicon photomultiplier arrays

    Energy Technology Data Exchange (ETDEWEB)

    Bachmann, Sebastian; Comerma, Albert; Gerick, David; Han, Xiaoxue; Hansmann-Menzemer, Stephanie; Kecke, Matthieu; Leverington, Blake; Mazorra de Cos, Jose; Mitzel, Dominik; Neuner, Max; Uwer, Ulrich [Physikalisches Institut, Universitaet Heidelberg (Germany); Collaboration: LHCb-Collaboration

    2016-07-01

    The planned downstream tracking system - the Scintillating Fibre Tracker - for the LHCb upgrade uses silicon photomultiplier (SiPM) arrays of 128 channels to read out mats made of 250 μm diameter scintillating fibres. In the LHCb environment the neutron flux degrades the silicon detectors to the edge of an acceptable performance in terms of DCR. Studies have shown that the dark count rate (DCR) of the SiPMs increases linearly with the neutron flux. Towards the end of the designed lifetime of the experiment the DCR per SiPM channel operated at T = -40 C is expected to reach a few MHz after partial annealing. To reduce the impact of the DCR - while at the same time provide efficient hit reconstruction - a clustering algorithm is developed to separate signal from noise. A brief introduction into the custom designed read-out ASIC and the cluster algorithm are presented along with the studies of the dark count cluster rate dependency on the neutron flux, the DCR per channel and the effects of the applied signal thresholds for the clustering algorithm.

  8. Microfabrication on a curved surface using 3D microlens array projection

    International Nuclear Information System (INIS)

    Li, Lei; Yi, Allen Y

    2009-01-01

    Accurate three-dimensional microstructures on silicon or other substrates are becoming increasingly important for optical, electronic, biomedical and medical applications. Traditional microfabrication processes based on cleanroom lithography and dry or wet etching processes are essentially two-dimensional methods. In the past, complicated procedures were designed to create some three-dimensional microstructures; however, these processes were mainly used to create features on planar silicon wafer substrates using the bulk silicon machining technique. In a major departure from previous micromachining processes, a microfabrication process based on microlens projection is presented in this paper. The proposed microfabrication system will have the capabilities of a typical conventional micromachining process plus the unique true three-dimensional replication features based on microlenses that were created on a steep curved substrate. These microlenses were precisely fabricated with a specific pattern on the curved surface that can be used to create microstructures on a pre-defined nonplanar substrate where a layer of photoresist was spin coated. After proper exposure and development, the desired micro patterns are created on the photoresist layer. These micro features can eventually be replicated on the substrate via wet or dry etching processes. The results show that the fabricated three-dimensional microlens array has very high dimensional accuracy and the profile error is less than 6 µm over the entire surface

  9. Laser desorption/ionization from nanostructured surfaces: nanowires, nanoparticle films and silicon microcolumn arrays

    International Nuclear Information System (INIS)

    Chen Yong; Luo Guanghong; Diao Jiajie; Chornoguz, Olesya; Reeves, Mark; Vertes, Akos

    2007-01-01

    Due to their optical properties and morphology, thin films formed of nanoparticles are potentially new platforms for soft laser desorption/ionization (SLDI) mass spectrometry. Thin films of gold nanoparticles (with 12±1 nm particle size) were prepared by evaporation-driven vertical colloidal deposition and used to analyze a series of directly deposited polypeptide samples. In this new SLDI method, the required laser fluence for ion detection was equal or less than what was needed for matrix-assisted laser desorption/ionization (MALDI) but the resulting spectra were free of matrix interferences. A silicon microcolumn array-based substrate (a.k.a. black silicon) was developed as a new matrix-free laser desorption ionization surface. When low-resistivity silicon wafers were processed with a 22 ps pulse length 3xω Nd:YAG laser in air, SF 6 or water environment, regularly arranged conical spikes emerged. The radii of the spike tips varied with the processing environment, ranging from approximately 500 nm in water, to ∼2 μm in SF 6 gas and to ∼5 μm in air. Peptide mass spectra directly induced by a nitrogen laser showed the formation of protonated ions of angiotensin I and II, substance P, bradykinin fragment 1-7, synthetic peptide, pro14-arg, and insulin from the processed silicon surfaces but not from the unprocessed areas. Threshold fluences for desorption/ionization were similar to those used in MALDI. Although compared to silicon nanowires the threshold laser pulse energy for ionization is significantly (∼10x) higher, the ease of production and robustness of microcolumn arrays offer complementary benefits

  10. Monolithic electrically injected nanowire array edge-emitting laser on (001) silicon

    KAUST Repository

    Frost, Thomas; Jahangir, Shafat; Stark, Ethan; Deshpande, Saniya; Hazari, Arnab Shashi; Zhao, Chao; Ooi, Boon S.; Bhattacharya, Pallab K.

    2014-01-01

    A silicon-based laser, preferably electrically pumped, has long been a scientific and engineering goal. We demonstrate here, for the first time, an edge-emitting InGaN/GaN disk-in-nanowire array electrically pumped laser emitting in the green (λ = 533 nm) on (001) silicon substrate. The devices display excellent dc and dynamic characteristics with values of threshold current density, differential gain, T0 and small signal modulation bandwidth equal to 1.76 kA/cm2, 3 × 10-17 cm2, 232 K, and 5.8 GHz respectively under continuous wave operation. Preliminary reliability measurements indicate a lifetime of 7000 h. The emission wavelength can be tuned by varying the alloy composition in the quantum disks. The monolithic nanowire laser on (001)Si can therefore address wide-ranging applications such as solid state lighting, displays, plastic fiber communication, medical diagnostics, and silicon photonics. © 2014 American Chemical Society.

  11. Monolithic electrically injected nanowire array edge-emitting laser on (001) silicon

    KAUST Repository

    Frost, Thomas

    2014-08-13

    A silicon-based laser, preferably electrically pumped, has long been a scientific and engineering goal. We demonstrate here, for the first time, an edge-emitting InGaN/GaN disk-in-nanowire array electrically pumped laser emitting in the green (λ = 533 nm) on (001) silicon substrate. The devices display excellent dc and dynamic characteristics with values of threshold current density, differential gain, T0 and small signal modulation bandwidth equal to 1.76 kA/cm2, 3 × 10-17 cm2, 232 K, and 5.8 GHz respectively under continuous wave operation. Preliminary reliability measurements indicate a lifetime of 7000 h. The emission wavelength can be tuned by varying the alloy composition in the quantum disks. The monolithic nanowire laser on (001)Si can therefore address wide-ranging applications such as solid state lighting, displays, plastic fiber communication, medical diagnostics, and silicon photonics. © 2014 American Chemical Society.

  12. Process Research On Polycrystalline Silicon Material (PROPSM). [flat plate solar array project

    Science.gov (United States)

    Culik, J. S.

    1983-01-01

    The performance-limiting mechanisms in large-grain (greater than 1 to 2 mm in diameter) polycrystalline silicon solar cells were investigated by fabricating a matrix of 4 sq cm solar cells of various thickness from 10 cm x 10 cm polycrystalline silicon wafers of several bulk resistivities. Analysis of the illuminated I-V characteristics of these cells suggests that bulk recombination is the dominant factor limiting the short-circuit current. The average open-circuit voltage of the polycrystalline solar cells is 30 to 70 mV lower than that of co-processed single-crystal cells; the fill-factor is comparable. Both open-circuit voltage and fill-factor of the polycrystalline cells have substantial scatter that is not related to either thickness or resistivity. This implies that these characteristics are sensitive to an additional mechanism that is probably spatial in nature. A damage-gettering heat-treatment improved the minority-carrier diffusion length in low lifetime polycrystalline silicon, however, extended high temperature heat-treatment degraded the lifetime.

  13. Morphology dependent field emission characteristics of ZnS/silicon nanoporous pillar array

    Science.gov (United States)

    Wang, Ling Li; Zhao, Cheng Zhou; Kang, Li Ping; Liu, De Wei; Zhao, Hui Chun; Hao, Shan Peng; Zhang, Yuan Kai; Chen, Zhen Ping; Li, Xin Jian

    2016-10-01

    Through depositing zinc sulphide (ZnS) nanoparticals on silicon nanoporous pillar array (Si-NPA) and crater-shaped silicon nanoporous pillar array (c-Si-NPA) by chemical bath deposition (CBD) method, ZnS/Si-NPA and c-ZnS/Si-NPA were prepared and the field emission (FE) properties of them were investigated. The turn-on electric fields of were 3.8 V/mm for ZnS/Si-NPA and 5.0 V/mm for c-ZnS/Si-NPA, respectively. The lower turn-on electric fields of ZnS/Si-NPA than that of c-ZnS/Si-NPA were attributed to the different electric distribution of the field emitters causing by the different surface morphology of the two samples, which was further demonstrated via the simulated results by finite element modeling. The FN curves for the ZnS/Si-NPA showed two-slope behavior. All the results indicate that the morphology play an important role in the FE properties and designing an appropriate top morphology for the emitter is a very efficient way to improve the FE performance.

  14. Hybrid heterojunction solar cell based on organic-inorganic silicon nanowire array architecture.

    Science.gov (United States)

    Shen, Xiaojuan; Sun, Baoquan; Liu, Dong; Lee, Shuit-Tong

    2011-12-07

    Silicon nanowire arrays (SiNWs) on a planar silicon wafer can be fabricated by a simple metal-assisted wet chemical etching method. They can offer an excellent light harvesting capability through light scattering and trapping. In this work, we demonstrated that the organic-inorganic solar cell based on hybrid composites of conjugated molecules and SiNWs on a planar substrate yielded an excellent power conversion efficiency (PCE) of 9.70%. The high efficiency was ascribed to two aspects: one was the improvement of the light absorption by SiNWs structure on the planar components; the other was the enhancement of charge extraction efficiency, resulting from the novel top contact by forming a thin organic layer shell around the individual silicon nanowire. On the contrary, the sole planar junction solar cell only exhibited a PCE of 6.01%, due to the lower light trapping capability and the less hole extraction efficiency. It indicated that both the SiNWs structure and the thin organic layer top contact were critical to achieve a high performance organic/silicon solar cell. © 2011 American Chemical Society

  15. Ultracompact high-efficiency polarising beam splitter based on silicon nanobrick arrays.

    Science.gov (United States)

    Zheng, Guoxing; Liu, Guogen; Kenney, Mitchell Guy; Li, Zile; He, Ping'an; Li, Song; Ren, Zhi; Deng, Qiling

    2016-03-21

    Since the transmission of anisotropic nano-structures is sensitive to the polarisation of an incident beam, a novel polarising beam splitter (PBS) based on silicon nanobrick arrays is proposed. With careful design of such structures, an incident beam with polarisation direction aligned with the long axis of the nanobrick is almost totally reflected (~98.5%), whilst that along the short axis is nearly totally transmitted (~94.3%). More importantly, by simply changing the width of the nanobrick we can shift the peak response wavelength from 1460 nm to 1625 nm, covering S, C and L bands of the fiber telecommunications windows. The silicon nanobrick-based PBS can find applications in many fields which require ultracompactness, high efficiency, and compatibility with semiconductor industry technologies.

  16. Low cost silicon solar array project large area silicon sheet task: Silicon web process development

    Science.gov (United States)

    Duncan, C. S.; Seidensticker, R. G.; Mchugh, J. P.; Blais, P. D.; Davis, J. R., Jr.

    1977-01-01

    Growth configurations were developed which produced crystals having low residual stress levels. The properties of a 106 mm diameter round crucible were evaluated and it was found that this design had greatly enhanced temperature fluctuations arising from convection in the melt. Thermal modeling efforts were directed to developing finite element models of the 106 mm round crucible and an elongated susceptor/crucible configuration. Also, the thermal model for the heat loss modes from the dendritic web was examined for guidance in reducing the thermal stress in the web. An economic analysis was prepared to evaluate the silicon web process in relation to price goals.

  17. Evaluation of selected chemical processes for production of low-cost silicon phase 2. silicon material task, low-cost silicon solar array project

    Science.gov (United States)

    Blocher, J. M., Jr.; Browning, M. F.; Rose, E. E.; Thompson, W. B.; Schmitt, W. A.; Fippin, J. S.; Kidd, R. W.; Liu, C. Y.; Kerbler, P. S.; Ackley, W. R.

    1978-01-01

    Progress from October 1, 1977, through December 31, 1977, is reported in the design of the 50 MT/year experimental facility for the preparation of high purity silicon by the zinc vapor reduction of silicon tetrachloride in a fluidized bed of seed particles to form a free flowing granular product.

  18. Piezoresistive silicon thin film sensor array for biomedical applications

    International Nuclear Information System (INIS)

    Alpuim, P.; Correia, V.; Marins, E.S.; Rocha, J.G.; Trindade, I.G.; Lanceros-Mendez, S.

    2011-01-01

    N-type hydrogenated nanocrystalline silicon thin film piezoresistors, with gauge factor - 28, were deposited on rugged and flexible polyimide foils by Hot-wire chemical vapor deposition using a tantalum filament heated to 1750 o C. The piezoresistive response under cyclic quasi-static and dynamical (up to 100 Hz) load conditions is reported. Test structures, consisting of microresistors having lateral dimensions in the range from 50 to 100 μm and thickness of 120 nm were defined in an array by reactive ion etching. Metallic pads, forming ohmic contacts to the sensing elements, were defined by a lift-off process. A readout circuit for the array consisting in a mutiplexer on each row and column of the matrix is proposed. The digital data will be processed, interpreted and stored internally by an ultra low-power micro controller, also responsible for the communication of two-way wireless data, e.g. from inside to outside the human body.

  19. Directing polyallylamine adsorption on microlens array patterned silicon for microarray fabrication.

    Science.gov (United States)

    Saini, Gaurav; Gates, Richard; Asplund, Matthew C; Blair, Steve; Attavar, Sachin; Linford, Matthew R

    2009-06-21

    The selective adsorption of reagents is often essential for bioarray and lab-on-a-chip type devices. As the starting point for a bioarray, alkyl monolayer terminated silicon shards were photopatterned in a few nanoseconds with thousands of wells (spots) using an optical element, a microlens array. Polyallylamine (PAAm), a primary amine containing polymer, adsorbed with little selectivity to the spots, i.e., silicon oxide, over the hydrophobic background. However, at appropriate concentrations, addition of a cationic surfactant to the PAAm deposition solution, cetyltrimethylammonium chloride, prevented the nonspecific adsorption of PAAm onto the hydrophobic monolayer, while directing it effectively to the active spots on the device. A nonionic surfactant was less effective in preventing the nonspecific adsorption of PAAm onto the hydrophobic monolayer. The localized reactions/interactions of adsorbed PAAm with four species that are useful for bioconjugate chemistry: glutaric anhydride, phenylenediisothiocyanate, biotin NHS ester, and an oligonucleotide (DNA) were shown in the spots of an array. The reactivity of PAAm was further demonstrated with an isocyanate. Time-of-flight secondary ion mass spectrometry (ToF-SIMS) played an important role in confirming selective surface reactivity and adsorption. X-ray photoelectron spectroscopy (XPS), spectroscopic ellipsometry, and wetting confirmed PAAm reactivity on planar substrates.

  20. Relaxing the electrostatic screening effect by patterning vertically-aligned silicon nanowire arrays into bundles for field emission application

    Energy Technology Data Exchange (ETDEWEB)

    Hung, Yung-Jr, E-mail: yungjrhung@gmail.com [Department of Electronic Engineering, National Taiwan University of Science and Technology, No. 43, Sec. 4, Keelung Rd., Taipei 106, Taiwan, ROC (China); Department of Photonics, National Sun Yat-sen University, No. 70, Lienhai Rd., Kaohsiung 80424, Taiwan, ROC (China); Graduate Institute of Electro-Optical Engineering, National Taiwan University of Science and Technology, No. 43, Sec. 4, Keelung Rd., Taipei 106, Taiwan, ROC (China); Lee, San-Liang [Department of Electronic Engineering, National Taiwan University of Science and Technology, No. 43, Sec. 4, Keelung Rd., Taipei 106, Taiwan, ROC (China); Graduate Institute of Electro-Optical Engineering, National Taiwan University of Science and Technology, No. 43, Sec. 4, Keelung Rd., Taipei 106, Taiwan, ROC (China); Beng, Looi Choon [Faculty of Engineering, Multimedia University, Jalan Multimedia, 63100 Cyberjaya, Selangor (Malaysia); Chang, Hsuan-Chen [Department of Electronic Engineering, National Taiwan University of Science and Technology, No. 43, Sec. 4, Keelung Rd., Taipei 106, Taiwan, ROC (China); Graduate Institute of Electro-Optical Engineering, National Taiwan University of Science and Technology, No. 43, Sec. 4, Keelung Rd., Taipei 106, Taiwan, ROC (China); Huang, Yung-Jui [Graduate Institute of Electro-Optical Engineering, National Taiwan University of Science and Technology, No. 43, Sec. 4, Keelung Rd., Taipei 106, Taiwan, ROC (China); Lee, Kuei-Yi; Huang, Ying-Sheng [Department of Electronic Engineering, National Taiwan University of Science and Technology, No. 43, Sec. 4, Keelung Rd., Taipei 106, Taiwan, ROC (China); Graduate Institute of Electro-Optical Engineering, National Taiwan University of Science and Technology, No. 43, Sec. 4, Keelung Rd., Taipei 106, Taiwan, ROC (China)

    2014-04-01

    Top-down fabrication strategies are proposed and demonstrated to realize arrays of vertically-aligned silicon nanowire bundles and bundle arrays of carbon nanotube–silicon nanowire (CNT–SiNW) heterojunctions, aiming for releasing the electrostatic screening effect and improving the field emission characteristics. The trade-off between the reduction in the electrostatic screening effect and the decrease of emission sites leads to an optimal SiNW bundle arrangement which enables the lowest turn-on electric field of 1.4 V/μm and highest emission current density of 191 μA/cm{sup 2} among all testing SiNW samples. Benefiting from the superior thermal and electrical properties of CNTs and the flexible patterning technologies available for SiNWs, bundle arrays of CNT–SiNW heterojunctions show improved and highly-uniform field emission with a lower turn-on electric field of 0.9 V/μm and higher emission current density of 5.86 mA/cm{sup 2}. The application of these materials and their corresponding fabrication approaches is not limited to the field emission but can be used for a variety of emerging fields like nanoelectronics, lithium-ion batteries, and solar cells. - Highlights: • Aligned silicon nanowire (SiNW) bundle arrays are realized with top-down methods. • Growing carbon nanotubes atop SiNW bundle arrays enable uniform field emission. • A turn-on field of 0.9 V/μm and an emission current of > 5 mA/cm{sup 2} are achieved.

  1. The GPS Laser Retroreflector Array Project

    Science.gov (United States)

    Merkowitz, Stephen M.

    2012-01-01

    Systematic co-location in space through the precision orbit determination of GPS satellites via satellite laser ranging will contribute significantly towards improving the accuracy and stability of the international terrestrial reference frame. NASA recently formed the GPS Laser Retroreflector Array Project to develop and deliver retroreflectors for integration on the next generation of GPS satellites. These retroreflectors will be an important contributor to achieving a global accuracy of 1.0 mm and 0.1 mm/year stability in the international terrestrial reference frame. We report here the current status of the GPS Laser Retroreflector Array Project.

  2. Fabrication and Optical Characterization of Silicon Nanostructure Arrays by Laser Interference Lithography and Metal-Assisted Chemical Etching

    Directory of Open Access Journals (Sweden)

    P. Heydari

    2014-10-01

    Full Text Available In this paper metal-assisted chemical etching has been applied to pattern porous silicon regions and silicon nanohole arrays in submicron period simply by using positive photoresist as a mask layer. In order to define silicon nanostructures, Metal-assisted chemical etching (MaCE was carried out with silver catalyst. Provided solution (or materiel in combination with laser interference lithography (LIL fabricated different reproducible pillars, holes and rhomboidal structures. As a result, Submicron patterning of porous areas and nanohole arrays on Si substrate with a minimum feature size of 600nm was achieved. Measured reflection spectra of the samples present different optical characteristics which is dependent on the shape, thickness of metal catalyst and periodicity of the structure. These structures can be designed to reach a photonic bandgap in special range or antireflection layer in energy harvesting applications. The resulted reflection spectra of applied method are comparable to conventional expensive and complicated dry etching techniques.

  3. Application of neural networks to digital pulse shape analysis for an array of silicon strip detectors

    Energy Technology Data Exchange (ETDEWEB)

    Flores, J.L. [Dpto de Ingeniería Eléctrica y Térmica, Universidad de Huelva (Spain); Martel, I. [Dpto de Física Aplicada, Universidad de Huelva (Spain); CERN, ISOLDE, CH 1211 Geneva, 23 (Switzerland); Jiménez, R. [Dpto de Ingeniería Electrónica, Sist. Informáticos y Automática, Universidad de Huelva (Spain); Galán, J., E-mail: jgalan@diesia.uhu.es [Dpto de Ingeniería Electrónica, Sist. Informáticos y Automática, Universidad de Huelva (Spain); Salmerón, P. [Dpto de Ingeniería Eléctrica y Térmica, Universidad de Huelva (Spain)

    2016-09-11

    The new generation of nuclear physics detectors that used to study nuclear reactions is considering the use of digital pulse shape analysis techniques (DPSA) to obtain the (A,Z) values of the reaction products impinging in solid state detectors. This technique can be an important tool for selecting the relevant reaction channels at the HYDE (HYbrid DEtector ball array) silicon array foreseen for the Low Energy Branch of the FAIR facility (Darmstadt, Germany). In this work we study the feasibility of using artificial neural networks (ANNs) for particle identification with silicon detectors. Multilayer Perceptron networks were trained and tested with recent experimental data, showing excellent identification capabilities with signals of several isotopes ranging from {sup 12}C up to {sup 84}Kr, yielding higher discrimination rates than any other previously reported.

  4. Synthesis, characterization and application of electroless metal assisted silicon nanowire arrays

    Energy Technology Data Exchange (ETDEWEB)

    Sahoo, Sumanta Kumar [Centre for Nanoscience & Technology, Department of Mechanical Engineering, Mepco Schlenk Engineering College, Sivakasi 626 005, Tamilnadu (India); Marikani, Arumugam, E-mail: amari@mepcoeng.ac.in [Department of Physics, Mepco Schlenk Engineering College, Sivakasi 626 005, Tamilnadu (India)

    2015-12-01

    Highlights: • Preparation of Silicon nanowire arrays (SiNWs) by electroless metal deposition technique. • From analysis, it has been found that the as-prepared SiNWs are of 3.5–4.0 μm and 75 nm of length and diameter in average respectively. Further a characteristic Raman peak at 520 cm{sup −1} also has been observed. • It exhibits good electron field-emission properties with turn-on field (E{sub 0}) of about 8.26 V μm{sup −1} at current density (J) of 4.9 μA cm{sup −2}. • Functionalized SiNWs have been used for electrochemical detection bovine serum albumin protein bio-molecules. - Abstract: Vertically aligned silicon nanowire arrays (SiNWs) have been synthesized by electroless metal deposition process. The fabricated SiNWs have an average diameter of 75 nm and 3.5–4.0 μm length, as confirmed from scanning electron microscopy. A characteristic asymmetric peak broadening at 520 cm{sup −1} from Raman spectroscopy was obtained for the SiNWs as compared to the bulk silicon crystal due to phonon confinement. The as-prepared SiNWs exhibit good electron field-emission properties with turn-on field of about 8.26 V μm{sup −1} at a current density of 4.9 μA cm{sup −2}. The SiNWs was functionalized by coating with a thin gold metallic film for 60 s, and then used as bio-probe for the detection of bovine serum albumin (BSA) protein molecules. From the linear sweep voltammetry analysis, the Au coated SiNWs, exhibit linear response to the BSA analyte with increase in concentration. The minimum detection limit of the protein molecule was calculated of about 1.16 μM by the as-synthesized SiNWs probe.

  5. N-Type delta Doping of High-Purity Silicon Imaging Arrays

    Science.gov (United States)

    Blacksberg, Jordana; Hoenk, Michael; Nikzad, Shouleh

    2005-01-01

    A process for n-type (electron-donor) delta doping has shown promise as a means of modifying back-illuminated image detectors made from n-doped high-purity silicon to enable them to detect high-energy photons (ultraviolet and x-rays) and low-energy charged particles (electrons and ions). This process is applicable to imaging detectors of several types, including charge-coupled devices, hybrid devices, and complementary metal oxide/semiconductor detector arrays. Delta doping is so named because its density-vs.-depth characteristic is reminiscent of the Dirac delta function (impulse function): the dopant is highly concentrated in a very thin layer. Preferably, the dopant is concentrated in one or at most two atomic layers in a crystal plane and, therefore, delta doping is also known as atomic-plane doping. The use of doping to enable detection of high-energy photons and low-energy particles was reported in several prior NASA Tech Briefs articles. As described in more detail in those articles, the main benefit afforded by delta doping of a back-illuminated silicon detector is to eliminate a "dead" layer at the back surface of the silicon wherein high-energy photons and low-energy particles are absorbed without detection. An additional benefit is that the delta-doped layer can serve as a back-side electrical contact. Delta doping of p-type silicon detectors is well established. The development of the present process addresses concerns specific to the delta doping of high-purity silicon detectors, which are typically n-type. The present process involves relatively low temperatures, is fully compatible with other processes used to fabricate the detectors, and does not entail interruption of those processes. Indeed, this process can be the last stage in the fabrication of an imaging detector that has, in all other respects, already been fully processed, including metallized. This process includes molecular-beam epitaxy (MBE) for deposition of three layers, including

  6. Photoacoustic projection imaging using an all-optical detector array

    Science.gov (United States)

    Bauer-Marschallinger, J.; Felbermayer, K.; Berer, T.

    2018-02-01

    We present a prototype for all-optical photoacoustic projection imaging. By generating projection images, photoacoustic information of large volumes can be retrieved with less effort compared to common photoacoustic computed tomography where many detectors and/or multiple measurements are required. In our approach, an array of 60 integrating line detectors is used to acquire photoacoustic waves. The line detector array consists of fiber-optic MachZehnder interferometers, distributed on a cylindrical surface. From the measured variation of the optical path lengths of the interferometers, induced by photoacoustic waves, a photoacoustic projection image can be reconstructed. The resulting images represent the projection of the three-dimensional spatial light absorbance within the imaged object onto a two-dimensional plane, perpendicular to the line detector array. The fiber-optic detectors achieve a noise-equivalent pressure of 24 Pascal at a 10 MHz bandwidth. We present the operational principle, the structure of the array, and resulting images. The system can acquire high-resolution projection images of large volumes within a short period of time. Imaging large volumes at high frame rates facilitates monitoring of dynamic processes.

  7. Low-cost solar array progress and plans

    Science.gov (United States)

    Callaghan, W. T.

    It is pointed out that significant redirection has occurred in the U.S. Department of Energy (DOE) Photovoltaics Program, and thus in the Flat-Plate Solar Array Project (FSA), since the 3rd European Communities Conference. The Silicon Materials Task has now the objective to sponsor theoretical and experimental research on silicon material refinement technology suitable for photovoltaic flat-plate solar arrays. With respect to the hydrochlorination reaction, a process proof of concept was completed through definition of reaction kinetics, catalyst, and reaction characteristics. In connection with the dichlorosilane chemical vapor desposition process, a preliminary design was completed of an experimental process system development unit with a capacity of 100 to 200 MT/yr of Si.Attention is also given to the silicon-sheet formation research area, environmental isolation research, the cell and module formation task, the engineering sciences area, and the module performance and failure analysis area.

  8. Topology optimization of Halbach magnet arrays using isoparametric projection

    International Nuclear Information System (INIS)

    Lee, Jaewook; Nomura, Tsuyoshi; Dede, Ercan M.

    2017-01-01

    Highlights: • Design method of Halbach magnet array is proposed using topology optimization. • Magnet strength and direction are simultaneously optimized by isoparametric projection. • For manufacturing feasibility of magnet, penalization and extrusion schemes are proposed. • Design results of circular shaped Halbach arrays are provided. • Halbach arrays in linear actuator are optimized to maximize magnetic force. - Abstract: Topology optimization using isoparametric projection for the design of permanent magnet patterns in Halbach arrays is proposed. Based on isoparametric shape functions used in the finite element analysis, the permanent magnet strength and magnetization directions in a Halbach array are simultaneously optimized for a given design goal. To achieve fabrication feasibility of a designed Halbach magnet array, two design schemes are combined with the isoparametric projection method. First, a penalization scheme is proposed for designing the permanent magnets to have discrete magnetization direction angles. Second, an extrusion scheme is proposed for the shape regularization of the permanent magnet segments. As a result, the method systematically finds the optimal permanent magnet patterns of a Halbach array considering manufacturing feasibility. In two numerical examples, a circular shaped permanent magnet Halbach array is designed to minimize the magnitude of the magnetic flux density and to maximize the upward direction magnetic flux density inside the magnet array. Logical extension of the method to the design of permanent magnet arrays in linear actuators is provided, where the design goal is to maximize the actuator magnetic force.

  9. Topology optimization of Halbach magnet arrays using isoparametric projection

    Energy Technology Data Exchange (ETDEWEB)

    Lee, Jaewook, E-mail: jaewooklee@gist.ac.kr [School of Mechanical Engineering, Gwangju Institute of Science and Technology (GIST), Gwangju, 61005 (Korea, Republic of); Nomura, Tsuyoshi [Toyota Central R& D Labs., Inc., 41-1 Yokomichi, Aichi 480-1192 (Japan); Toyota Research Institute of North America, 1555 Woodridge Avenue, Ann Arbor, MI 48105 (United States); Dede, Ercan M. [Toyota Research Institute of North America, 1555 Woodridge Avenue, Ann Arbor, MI 48105 (United States)

    2017-06-15

    Highlights: • Design method of Halbach magnet array is proposed using topology optimization. • Magnet strength and direction are simultaneously optimized by isoparametric projection. • For manufacturing feasibility of magnet, penalization and extrusion schemes are proposed. • Design results of circular shaped Halbach arrays are provided. • Halbach arrays in linear actuator are optimized to maximize magnetic force. - Abstract: Topology optimization using isoparametric projection for the design of permanent magnet patterns in Halbach arrays is proposed. Based on isoparametric shape functions used in the finite element analysis, the permanent magnet strength and magnetization directions in a Halbach array are simultaneously optimized for a given design goal. To achieve fabrication feasibility of a designed Halbach magnet array, two design schemes are combined with the isoparametric projection method. First, a penalization scheme is proposed for designing the permanent magnets to have discrete magnetization direction angles. Second, an extrusion scheme is proposed for the shape regularization of the permanent magnet segments. As a result, the method systematically finds the optimal permanent magnet patterns of a Halbach array considering manufacturing feasibility. In two numerical examples, a circular shaped permanent magnet Halbach array is designed to minimize the magnitude of the magnetic flux density and to maximize the upward direction magnetic flux density inside the magnet array. Logical extension of the method to the design of permanent magnet arrays in linear actuators is provided, where the design goal is to maximize the actuator magnetic force.

  10. Fabrication of disposable topographic silicon oxide from sawtoothed patterns: control of arrays of gold nanoparticles.

    Science.gov (United States)

    Cho, Heesook; Yoo, Hana; Park, Soojin

    2010-05-18

    Disposable topographic silicon oxide patterns were fabricated from polymeric replicas of sawtoothed glass surfaces, spin-coating of poly(dimethylsiloxane) (PDMS) thin films, and thermal annealing at certain temperature and followed by oxygen plasma treatment of the thin PDMS layer. A simple imprinting process was used to fabricate the replicated PDMS and PS patterns from sawtoothed glass surfaces. Next, thin layers of PDMS films having different thicknesses were spin-coated onto the sawtoothed PS surfaces and annealed at 60 degrees C to be drawn the PDMS into the valley of the sawtoothed PS surfaces, followed by oxygen plasma treatment to fabricate topographic silicon oxide patterns. By control of the thickness of PDMS layers, silicon oxide patterns having various line widths were fabricated. The silicon oxide topographic patterns were used to direct the self-assembly of polystyrene-block-poly(2-vinylpyridine) (PS-b-P2VP) block copolymer thin films via solvent annealing process. A highly ordered PS-b-P2VP micellar structure was used to let gold precursor complex with P2VP chains, and followed by oxygen plasma treatment. When the PS-b-P2VP thin films containing gold salts were exposed to oxygen plasma environments, gold salts were reduced to pure gold nanoparticles without changing high degree of lateral order, while polymers were completely degraded. As the width of trough and crest in topographic patterns increases, the number of gold arrays and size of gold nanoparticles are tuned. In the final step, the silicon oxide topographic patterns were selectively removed by wet etching process without changing the arrays of gold nanoparticles.

  11. Continuous Czochralski growth: Silicon sheet growth development of the large area sheet task of the low cost silicon solar array project

    Science.gov (United States)

    Johnson, C. M.

    1980-12-01

    The growth of 100 kg of silicon single crystal material, ten cm in diameter or greater, and 150 kg of silicon single crystal material 15 cm or greater utilizing one common silicon container material (one crucible) is investigated. A crystal grower that is recharged with a new supply of polysilicon material while still under vacuum and at temperatures above the melting point of silicon is developed. It accepts large polysilicon charges up to 30 kg, grows large crystal ingots (to 15 cm diameter and 25 kg in weight), and holds polysilicon material for recharging (rod or lump) while, at the same time, growing crystal ingots. Special equipment is designed to recharge polysilicon rods, recharge polysilicon lumps, and handle and store large, hot silicon crystal ingots. Many continuous crystal growth runs were performed lasting as long as 109 hours and producing as many as ten crystal ingots, 15 cm with weights progressing to 27 kg.

  12. Sixa-silicon x-ray array

    International Nuclear Information System (INIS)

    Taylor, I.

    1995-01-01

    Full text: The Spectrum-X-Gamma (SRG) satellite is scheduled for launch in 1995-96. Mission objectives include broad and narrow band imaging spectroscopy over a wide range of energies from the EUV through hard X-rays with an emphasis on studying galactic and extragalactic X-ray sources. Timing and moderate resolution spectroscopy can be performed with the solid state spectrometer SIXA (Silicon X-Ray Array), placed on the focal plane of the SODART telescope with total effective area of 1150 cm 2 at 6 keV (for f = 8 in telescope). The detector consists of 19 circular Si(Li) pixels, each with an active diameter of 9.2 min and thickness of 3 min. A radiative cooler will be used to bring the detector to the proper operating temperature (120-130 K). The energy range 0.5-20 keV is divided into 1024 channels of 20 eV size. Photons can be recorded with 30 μs time resolution and 160-200 eV (1-7 keV) energy resolution. Potential observing programmes (for e.g. time-resolved Iron Kα line spectroscopy) include stellar coronae, cataclysmic variables and X-ray binaries; accretion discs and coronae of neutron stars and black hole candidates; supernova remnants, active galactic nuclei and clusters of galaxies. (author)

  13. The Texas-Edinburgh-Catania Silicon Array (TECSA): A detector for nuclear astrophysics and nuclear structure studies with rare isotope beams

    Energy Technology Data Exchange (ETDEWEB)

    Roeder, B.T., E-mail: broeder@comp.tamu.ed [Cyclotron Institute, Texas A and M University, College Station, TX 77843-3366 (United States); McCleskey, M.; Trache, L.; Alharbi, A.A.; Banu, A. [Cyclotron Institute, Texas A and M University, College Station, TX 77843-3366 (United States); Cherubini, S. [INFN-Laboratori Nazionali del Sud, Via S. Sofia 62, I95123 Catania (Italy); Dipartimento di Fisica e Astronomia, Universita di Catania, I95123 Catania (Italy); Davinson, T. [University of Edinburgh, Edinburgh EH9 3JZ (United Kingdom); Goldberg, V.Z. [Cyclotron Institute, Texas A and M University, College Station, TX 77843-3366 (United States); Gulino, M. [INFN-Laboratori Nazionali del Sud, Via S. Sofia 62, I95123 Catania (Italy); Dipartimento di Fisica e Astronomia, Universita di Catania, I95123 Catania (Italy); Pizzone, R.G. [INFN-Laboratori Nazionali del Sud, Via S. Sofia 62, I95123 Catania (Italy); Simmons, E. [Cyclotron Institute, Texas A and M University, College Station, TX 77843-3366 (United States); Sparta, R. [INFN-Laboratori Nazionali del Sud, Via S. Sofia 62, I95123 Catania (Italy); Spiridon, A. [Cyclotron Institute, Texas A and M University, College Station, TX 77843-3366 (United States); Spitaleri, C. [INFN-Laboratori Nazionali del Sud, Via S. Sofia 62, I95123 Catania (Italy); Dipartimento di Fisica e Astronomia, Universita di Catania, I95123 Catania (Italy); Wallace, J.P. [University of Edinburgh, Edinburgh EH9 3JZ (United Kingdom); Tribble, R.E. [Cyclotron Institute, Texas A and M University, College Station, TX 77843-3366 (United States); Woods, P.J. [University of Edinburgh, Edinburgh EH9 3JZ (United Kingdom)

    2011-04-01

    We present the details of the construction and commissioning of the Texas-Edinburgh-Catania Silicon Array (TECSA). TECSA is composed of up to 16 Micron Semiconductor Ltd. type-YY1 silicon strip detectors and associated electronics, which is designed for use in studies of nuclear astrophysics and nuclear structure with rare isotope beams. TECSA was assembled at the Texas A and M University Cyclotron Institute and will be housed there for the next few years. The array was commissioned in a recent experiment where the d({sup 14}C,p){sup 15}C reaction at 11.7 MeV/u was measured in inverse kinematics. The results of the measurement and a discussion of the future use of this array are presented.

  14. The Texas-Edinburgh-Catania Silicon Array (TECSA): A detector for nuclear astrophysics and nuclear structure studies with rare isotope beams

    International Nuclear Information System (INIS)

    Roeder, B.T.; McCleskey, M.; Trache, L.; Alharbi, A.A.; Banu, A.; Cherubini, S.; Davinson, T.; Goldberg, V.Z.; Gulino, M.; Pizzone, R.G.; Simmons, E.; Sparta, R.; Spiridon, A.; Spitaleri, C.; Wallace, J.P.; Tribble, R.E.; Woods, P.J.

    2011-01-01

    We present the details of the construction and commissioning of the Texas-Edinburgh-Catania Silicon Array (TECSA). TECSA is composed of up to 16 Micron Semiconductor Ltd. type-YY1 silicon strip detectors and associated electronics, which is designed for use in studies of nuclear astrophysics and nuclear structure with rare isotope beams. TECSA was assembled at the Texas A and M University Cyclotron Institute and will be housed there for the next few years. The array was commissioned in a recent experiment where the d( 14 C,p) 15 C reaction at 11.7 MeV/u was measured in inverse kinematics. The results of the measurement and a discussion of the future use of this array are presented.

  15. Periodic arrays of deep nanopores made in silicon with reactive ion etching and deep UV lithography

    International Nuclear Information System (INIS)

    Woldering, Leon A; Tjerkstra, R Willem; Vos, Willem L; Jansen, Henri V; Setija, Irwan D

    2008-01-01

    We report on the fabrication of periodic arrays of deep nanopores with high aspect ratios in crystalline silicon. The radii and pitches of the pores were defined in a chromium mask by means of deep UV scan and step technology. The pores were etched with a reactive ion etching process with SF 6 , optimized for the formation of deep nanopores. We have realized structures with pitches between 440 and 750 nm, pore diameters between 310 and 515 nm, and depth to diameter aspect ratios up to 16. To the best of our knowledge, this is the highest aspect ratio ever reported for arrays of nanopores in silicon made with a reactive ion etching process. Our experimental results show that the etching rate of the nanopores is aspect-ratio-dependent, and is mostly influenced by the angular distribution of the etching ions. Furthermore we show both experimentally and theoretically that, for sub-micrometer structures, reducing the sidewall erosion is the best way to maximize the aspect ratio of the pores. Our structures have potential applications in chemical sensors, in the control of liquid wetting of surfaces, and as capacitors in high-frequency electronics. We demonstrate by means of optical reflectivity that our high-quality structures are very well suited as photonic crystals. Since the process studied is compatible with existing CMOS semiconductor fabrication, it allows for the incorporation of the etched arrays in silicon chips

  16. Label-free silicon photonic biosensor system with integrated detector array

    Science.gov (United States)

    Yan, Rongjin; Mestas, Santano P.; Yuan, Guangwei; Safaisini, Rashid; Dandy, David S.

    2010-01-01

    An integrated, inexpensive, label-free photonic waveguide biosensor system with multi-analyte capability has been implemented on a silicon photonics integrated circuit from a commercial CMOS line and tested with nanofilms. The local evanescent array coupled (LEAC) biosensor is based on a new physical phenomenon that is fundamentally different from the mechanisms of other evanescent field sensors. Increased local refractive index at the waveguide’s upper surface due to the formation of a biological nanofilm causes local modulation of the evanescent field coupled into an array of photodetectors buried under the waveguide. The planar optical waveguide biosensor system exhibits sensitivity of 20%/nm photocurrent modulation in response to adsorbed bovine serum albumin (BSA) layers less than 3 nm thick. In addition to response to BSA, an experiment with patterned photoresist as well as beam propagation method simulations support the evanescent field shift principle. The sensing mechanism enables the integration of all optical and electronic components for a multi-analyte biosensor system on a chip. PMID:19606292

  17. Label-free silicon photonic biosensor system with integrated detector array.

    Science.gov (United States)

    Yan, Rongjin; Mestas, Santano P; Yuan, Guangwei; Safaisini, Rashid; Dandy, David S; Lear, Kevin L

    2009-08-07

    An integrated, inexpensive, label-free photonic waveguide biosensor system with multi-analyte capability has been implemented on a silicon photonics integrated circuit from a commercial CMOS line and tested with nanofilms. The local evanescent array coupled (LEAC) biosensor is based on a new physical phenomenon that is fundamentally different from the mechanisms of other evanescent field sensors. Increased local refractive index at the waveguide's upper surface due to the formation of a biological nanofilm causes local modulation of the evanescent field coupled into an array of photodetectors buried under the waveguide. The planar optical waveguide biosensor system exhibits sensitivity of 20%/nm photocurrent modulation in response to adsorbed bovine serum albumin (BSA) layers less than 3 nm thick. In addition to response to BSA, an experiment with patterned photoresist as well as beam propagation method simulations support the evanescent field shift principle. The sensing mechanism enables the integration of all optical and electronic components for a multi-analyte biosensor system on a chip.

  18. Enhancing the far-UV sensitivity of silicon CMOS imaging arrays

    Science.gov (United States)

    Retherford, K. D.; Bai, Yibin; Ryu, Kevin K.; Gregory, J. A.; Welander, Paul B.; Davis, Michael W.; Greathouse, Thomas K.; Winter, Gregory S.; Suntharalingam, Vyshnavi; Beletic, James W.

    2014-07-01

    We report our progress toward optimizing backside-illuminated silicon PIN CMOS devices developed by Teledyne Imaging Sensors (TIS) for far-UV planetary science applications. This project was motivated by initial measurements at Southwest Research Institute (SwRI) of the far-UV responsivity of backside-illuminated silicon PIN photodiode test structures described in Bai et al., SPIE, 2008, which revealed a promising QE in the 100-200 nm range as reported in Davis et al., SPIE, 2012. Our effort to advance the capabilities of thinned silicon wafers capitalizes on recent innovations in molecular beam epitaxy (MBE) doping processes. Key achievements to date include: 1) Representative silicon test wafers were fabricated by TIS, and set up for MBE processing at MIT Lincoln Laboratory (LL); 2) Preliminary far-UV detector QE simulation runs were completed to aid MBE layer design; 3) Detector fabrication was completed through the pre-MBE step; and 4) Initial testing of the MBE doping process was performed on monitoring wafers, with detailed quality assessments. Early results suggest that potential challenges in optimizing the UV-sensitivity of silicon PIN type CMOS devices, compared with similar UV enhancement methods established for CCDs, have been mitigated through our newly developed methods. We will discuss the potential advantages of our approach and briefly describe future development steps.

  19. Development of a multi-channel front-end electronics module based on ASIC for silicon strip array detectors

    International Nuclear Information System (INIS)

    Zhao Xingwen; Yan Duo; Su Hong; Qian Yi; Kong Jie; Zhang Xueheng; Li Zhankui; Li Haixia

    2014-01-01

    The silicon strip array detector is one of external target facility subsystems in the Cooling Storage Ring on the Heavy Ion Research Facility at Lanzhou (HIRFL-CSR). Using the ASICs, the front-end electronics module has been developed for the silicon strip array detectors and can implement measurement of energy of 96 channels. The performance of the front-end electronics module has been tested. The energy linearity of the front-end electronics module is better than 0.3% for the dynamic range of 0.1∼0.7 V. The energy resolution is better than 0.45%. The maximum channel crosstalk is better than 10%. The channel consistency is better than 1.3%. After continuously working for 24 h at room temperature, the maximum drift of the zero-peak is 1.48 mV. (authors)

  20. Build-up of the silicon micro-strip detector array in ETF of HIRFL-CSR

    International Nuclear Information System (INIS)

    Wang Pengfei; Li Zhankui; Li Haixia

    2014-01-01

    Silicon micro-strip detectors have been widely used in the world-famous nuclear physics laboratories due to their better position resolution and energy resolution. Double-sided silicon micro-strip detectors with a position resolution of 0.5 mm × 0.5 mm, have been fabricated in the IMP (Institute of Modern Physics, CAS) by using microelectronics technology. These detectors have been used in the ETF (External Target Facility) of HIRFL-CSR, as ΔE detectors of the ΔE-E telescope system and the track detectors. With the help of flexibility printed circuit board (FPCB) and the integrated ASIC chips, a compact multi-channel front-end electronic board has been designed to fulfill the acquisition of the energy and position information of the Silicon micro-strip detectors. It is described in this paper that the build-up of the Silicon micro-strip detector array in ETF of HIRFL-CSR, the determination of the energy resolution of the detector units, and the energy resolution of approximately 1% obtained for 5∼9 MeV α particles in vacuum. (authors)

  1. High-power, ultralow-mass solar arrays: FY-77 solar arrays technology readiness assessment report, volume 2

    Science.gov (United States)

    Costogue, E. N.; Young, L. E.; Brandhorst, H. W., Jr.

    1978-01-01

    Development efforts are reported in detail for: (1) a lightweight solar array system for solar electric propulsion; (2) a high efficiency thin silicon solar cell; (3) conceptual design of 200 W/kg solar arrays; (4) fluorocarbon encapsulation for silicon solar cell array; and (5) technology assessment of concentrator solar arrays.

  2. Efficient light trapping in silicon inclined nanohole arrays for photovoltaic applications

    Science.gov (United States)

    Deng, Can; Tan, Xinyu; Jiang, Lihua; Tu, Yiteng; Ye, Mao; Yi, Yasha

    2018-01-01

    Structural design with high light absorption is the key challenge for thin film solar cells because of its poor absorption. In this paper, the light-trapping performance of silicon inclined nanohole arrays is systematically studied. The finite difference time domain method is used to calculate the optical absorption of different inclination angles in different periods and diameters. The results indicate that the inclined nanoholes with inclination angles between 5° and 45° demonstrate greater light-trapping ability than their counterparts of the vertical nanoholes, and they also show that by choosing the optimal parameters for the inclined nanoholes, a 31.2 mA/cm2 short circuit photocurrent density could be achieved, which is 10.25% higher than the best vertical nanohole system and 105.26% higher than bare silicon with a thickness of 2330 nm. The design principle proposed in this work gives a guideline for choosing reasonable parameters in the application of solar cells.

  3. Microchannel-connected SU-8 honeycombs by single-step projection photolithography for positioning cells on silicon oxide nanopillar arrays

    International Nuclear Information System (INIS)

    Larramendy, Florian; Paul, Oliver; Blatche, Marie Charline; Mazenq, Laurent; Laborde, Adrian; Temple-Boyer, Pierre

    2015-01-01

    We report on the fabrication, functionalization and testing of SU-8 microstructures for cell culture and positioning over large areas. The microstructure consists of a honeycomb arrangement of cell containers interconnected by microchannels and centered on nanopillar arrays designed for promoting cell positioning. The containers have been dimensioned to trap single cells and, with a height of 50 µm, prevent cells from escaping. The structures are fabricated using a single ultraviolet photolithography exposure with focus depth in the lower part of the SU-8 resist. With optimized process parameters, microchannels of various aspect ratios are thus produced. The cell containers and microchannels serve for the organization of axonal growth between neurons. The roughly 2 µm-high and 500 nm-wide nanopillars are made of silicon oxide structured by deep reactive ion etching. In future work, beyond their cell positioning purpose, the nanopillars could be functionalized as sensors. The proof of concept of the novel microstructure for organized cell culture is given by the successful growth of interconnected PC12 cells. Promoted by the honeycomb geometry, a dense network of interconnections between the cells has formed and the intended intimate contact of cells with the nanopillar arrays was observed by scanning electron microscopy. This proves the potential of these new devices as tools for the controlled cell growth in an interconnected container system with well-defined 3D geometry. (paper)

  4. Microfabrication of an Implantable silicone Microelectrode array for an epiretinal prosthesis

    Energy Technology Data Exchange (ETDEWEB)

    Maghribi, Mariam Nader [Univ. of California, Davis, CA (United States)

    2003-06-10

    Millions of people suffering from diseases such as retinitis pigmentosa and macular degeneration are legally blind due to the loss of photoreceptor function. Fortunately a large percentage of the neural cells connected to the photoreceptors remain viable, and electrical stimulation of these cells has been shown to result in visual perception. These findings have generated worldwide efforts to develop a retinal prosthesis device, with the hope of restoring vision. Advances in microfabrication, integrated circuits, and wireless technologies provide the means to reach this challenging goal. This dissertation describes the development of innovative silicone-based microfabrication techniques for producing an implantable microelectrode array. The microelectrode array is a component of an epiretinal prosthesis being developed by a multi-laboratory consortium. This array will serve as the interface between an electronic imaging system and the human eye, directly stimulating retinal neurons via thin film conducting traces. Because the array is intended as a long-term implant, vital biological and physical design requirements must be met. A retinal implant poses difficult engineering challenges due to the size of the intraocular cavity and the delicate retina. Not only does it have to be biocompatible in terms of cytotoxicity and degradation, but it also has to be structurally biocompatible, with regard to smooth edges and high conformability; basically mimicking the biological tissue. This is vital to minimize stress and prevent physical damage to the retina. Also, the device must be robust to withstand the forces imposed on it during fabrication and implantation. In order to meet these biocompatibility needs, the use of non-conventional microfabrication materials such as silicone is required. This mandates the enhancement of currently available polymer-based fabrication techniques and the development of new microfabrication methods. Through an iterative process, devices

  5. Superparamagnetic iron oxide nanoparticle attachment on array of micro test tubes and microbeakers formed on p-type silicon substrate for biosensor applications

    Directory of Open Access Journals (Sweden)

    Raja Sufi

    2011-01-01

    Full Text Available Abstract A uniformly distributed array of micro test tubes and microbeakers is formed on a p-type silicon substrate with tunable cross-section and distance of separation by anodic etching of the silicon wafer in N, N-dimethylformamide and hydrofluoric acid, which essentially leads to the formation of macroporous silicon templates. A reasonable control over the dimensions of the structures could be achieved by tailoring the formation parameters, primarily the wafer resistivity. For a micro test tube, the cross-section (i.e., the pore size as well as the distance of separation between two adjacent test tubes (i.e., inter-pore distance is typically approximately 1 μm, whereas, for a microbeaker the pore size exceeds 1.5 μm and the inter-pore distance could be less than 100 nm. We successfully synthesized superparamagnetic iron oxide nanoparticles (SPIONs, with average particle size approximately 20 nm and attached them on the porous silicon chip surface as well as on the pore walls. Such SPION-coated arrays of micro test tubes and microbeakers are potential candidates for biosensors because of the biocompatibility of both silicon and SPIONs. As acquisition of data via microarray is an essential attribute of high throughput bio-sensing, the proposed nanostructured array may be a promising step in this direction.

  6. Photoconductor arrays for a spectral-photometric far-infrared camera on SOFIA

    Science.gov (United States)

    Wolf, Juergen; Driescher, Hans; Schubert, Josef; Rabanus, D.; Paul, E.; Roesner, K.

    1998-04-01

    The Stratospheric Observatory for Infrared Astronomy, SOFIA, is a joint US and German project and will start observations from altitudes up to 45,000 ft in late 2001. The 2.5 m telescope is being developed in Germany while the 747- aircraft modifications and preparation of the observatory's operations center is done by a US consortium. Several research institutions and universities of both countries have started to develop science instruments. The DLR Institute of Space Sensor Technology in Berlin plans on a spectral-photometric camera working in the 20 to 220 micrometers wavelength range, using doped silicon and germanium extrinsic photoconductors in large, 2D arrays: silicon blocked-impurity band detectors, Ge:Ga and stressed Ge:Ga. While the silicon array will be commercially available, the germanium arrays have to be developed, including their cryogenic multiplexers. Partner institutions in Germany and the US will support the development of the instrument and its observations.

  7. Reduction of Cr(VI) to Cr(III) using silicon nanowire arrays under visible light irradiation

    Energy Technology Data Exchange (ETDEWEB)

    Fellahi, Ouarda [Institut d' Electronique, de Microélectronique et de Nanotechnologie (IEMN), UMR CNRS 8520, Avenue Poincaré—BP 70478, 59652 Villeneuve d' Ascq Cedex (France); Centre de Recherche en Technologie des Semi-conducteurs pour l' Energétique-CRTSE 02, Bd Frantz Fanon, BP. 140, Alger 7 Merveilles (Algeria); Barras, Alexandre [Institut d' Electronique, de Microélectronique et de Nanotechnologie (IEMN), UMR CNRS 8520, Avenue Poincaré—BP 70478, 59652 Villeneuve d' Ascq Cedex (France); Pan, Guo-Hui [State Key Laboratory of Luminescence and Applications, Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences, 3888 Dong Nanhu Road, Changchun 130033 (China); Coffinier, Yannick [Institut d' Electronique, de Microélectronique et de Nanotechnologie (IEMN), UMR CNRS 8520, Avenue Poincaré—BP 70478, 59652 Villeneuve d' Ascq Cedex (France); Hadjersi, Toufik [Centre de Recherche en Technologie des Semi-conducteurs pour l' Energétique-CRTSE 02, Bd Frantz Fanon, BP. 140, Alger 7 Merveilles (Algeria); Maamache, Mustapha [Laboratoire de Physique Quantique et Systèmes Dynamiques, Département de Physique, Université de Sétif, Sétif 19000 (Algeria); Szunerits, Sabine [Institut d' Electronique, de Microélectronique et de Nanotechnologie (IEMN), UMR CNRS 8520, Avenue Poincaré—BP 70478, 59652 Villeneuve d' Ascq Cedex (France); and others

    2016-03-05

    Highlights: • Cr(VI) reduction to Cr(III) using silicon nanowires decorated with Cu nanoparticles. • The reduction takes place at room temperature and neutral pH under visible light. • The photocatalytic reduction was enhanced by addition of adipic or citric acid. - Abstract: We report an efficient visible light-induced reduction of hexavalent chromium Cr(VI) to trivalent Cr(III) by direct illumination of an aqueous solution of potassium dichromate (K{sub 2}Cr{sub 2}O{sub 7}) in the presence of hydrogenated silicon nanowires (H-SiNWs) or silicon nanowires decorated with copper nanoparticles (Cu NPs-SiNWs) as photocatalyst. The SiNW arrays investigated in this study were prepared by chemical etching of crystalline silicon in HF/AgNO{sub 3} aqueous solution. The Cu NPs were deposited on SiNW arrays via electroless deposition technique. Visible light irradiation of an aqueous solution of K{sub 2}Cr{sub 2}O{sub 7} (10{sup −4} M) in presence of H-SiNWs showed that these substrates were not efficient for Cr(VI) reduction. The reduction efficiency achieved was less than 10% after 120 min irradiation at λ > 420 nm. Addition of organic acids such as citric or adipic acid in the solution accelerated Cr(VI) reduction in a concentration-dependent manner. Interestingly, Cu NPs-SiNWs was found to be a very efficient interface for the reduction of Cr(VI) to Cr(III) in absence of organic acids. Almost a full reduction of Cr(VI) was achieved by direct visible light irradiation for 140 min using this photocatalyst.

  8. Nanopore arrays in a silicon membrane for parallel single-molecule detection: fabrication

    Science.gov (United States)

    Schmidt, Torsten; Zhang, Miao; Sychugov, Ilya; Roxhed, Niclas; Linnros, Jan

    2015-08-01

    Solid state nanopores enable translocation and detection of single bio-molecules such as DNA in buffer solutions. Here, sub-10 nm nanopore arrays in silicon membranes were fabricated by using electron-beam lithography to define etch pits and by using a subsequent electrochemical etching step. This approach effectively decouples positioning of the pores and the control of their size, where the pore size essentially results from the anodizing current and time in the etching cell. Nanopores with diameters as small as 7 nm, fully penetrating 300 nm thick membranes, were obtained. The presented fabrication scheme to form large arrays of nanopores is attractive for parallel bio-molecule sensing and DNA sequencing using optical techniques. In particular the signal-to-noise ratio is improved compared to other alternatives such as nitride membranes suffering from a high-luminescence background.

  9. Hollow silicon microneedle array based trans-epidermal antiemetic patch for efficient management of chemotherapy induced nausea and vomiting

    Science.gov (United States)

    Kharbikar, Bhushan N.; Kumar S., Harish; Kr., Sindhu; Srivastava, Rohit

    2015-12-01

    Chemotherapy Induced Nausea and Vomiting (CINV) is a serious health concern in the treatment of cancer patients. Conventional routes for administering anti-emetics (i.e. oral and parenteral) have several drawbacks such as painful injections, poor patient compliance, dependence on skilled personnel, non-affordability to majority of population (parenteral), lack of programmability and suboptimal bioavailability (oral). Hence, we have developed a trans-epidermal antiemetic drug delivery patch using out-of-plane hollow silicon microneedle array. Microneedles are pointed micron-scale structures that pierce the epidermal layer of skin to reach dermal blood vessels and can directly release the drug in their vicinity. They are painless by virtue of avoiding significant contact with dermal sensory nerve endings. This alternate approach gives same pharmacodynamic effects as par- enteral route at a sparse drug-dose requirement, hence negligible side-effects and improved patient compliance. Microneedle design attributes were derived by systematic study of human skin anatomy, natural micron-size structures like wasp-sting and cactus-spine and multi-physics simulations. We used deep reactive ion etching with Bosch process and optimized recipe of gases to fabricate high-aspect-ratio hollow silicon microneedle array. Finally, microneedle array and polydimethylsiloxane drug reservoir were assembled to make finished anti-emetic patch. We assessed microneedles mechanical stability, physico-chemical properties and performed in-vitro, ex- vivo and in-vivo studies. These studies established functional efficacy of the device in trans-epidermal delivery of anti-emetics, its programmability, ease of use and biosafety. Thus, out-of-plane hollow silicon microneedle array trans-epidermal antiemetic patch is a promising strategy for painless and effective management of CINV at low cost in mainstream healthcare.

  10. Core-shell heterojunction of silicon nanowire arrays and carbon quantum dots for photovoltaic devices and self-driven photodetectors.

    Science.gov (United States)

    Xie, Chao; Nie, Biao; Zeng, Longhui; Liang, Feng-Xia; Wang, Ming-Zheng; Luo, Linbao; Feng, Mei; Yu, Yongqiang; Wu, Chun-Yan; Wu, Yucheng; Yu, Shu-Hong

    2014-04-22

    Silicon nanostructure-based solar cells have lately intrigued intensive interest because of their promising potential in next-generation solar energy conversion devices. Herein, we report a silicon nanowire (SiNW) array/carbon quantum dot (CQD) core-shell heterojunction photovoltaic device by directly coating Ag-assisted chemical-etched SiNW arrays with CQDs. The heterojunction with a barrier height of 0.75 eV exhibited excellent rectifying behavior with a rectification ratio of 10(3) at ±0.8 V in the dark and power conversion efficiency (PCE) as high as 9.10% under AM 1.5G irradiation. It is believed that such a high PCE comes from the improved optical absorption as well as the optimized carrier transfer and collection capability. Furthermore, the heterojunction could function as a high-performance self-driven visible light photodetector operating in a wide switching wavelength with good stability, high sensitivity, and fast response speed. It is expected that the present SiNW array/CQD core-shell heterojunction device could find potential applications in future high-performance optoelectronic devices.

  11. Fluorinion transfer in silver-assisted chemical etching for silicon nanowires arrays

    International Nuclear Information System (INIS)

    Feng, Tianyu; Xu, Youlong; Zhang, Zhengwei; Mao, Shengchun

    2015-01-01

    Graphical abstract: - Highlights: • How Ag transfers F − to the adjacent Si atom was investigated and deduced by DFT at atomic scale. • Three-electrode CV tests proved the transferring function of Ag in the etching reaction. • Uniform SiNWAs were fabricated on unpolished silicon wafers with KOH pretreatment. - Abstract: Uniform silicon nanowires arrays (SiNWAs) were fabricated on unpolished rough silicon wafers through KOH pretreatment followed by silver-assisted chemical etching (SACE). Density functional theory (DFT) calculations were used to investigate the function of silver (Ag) at atomic scale in the etching process. Among three adsorption sites of Ag atom on Si(1 0 0) surface, Ag(T4) above the fourth-layer surface Si atoms could transfer fluorinion (F − ) to adjacent Si successfully due to its stronger electrostatic attraction force between Ag(T4) and F − , smaller azimuth angle of F−Ag(T4)−Si, shorter bond length of F−Si compared with F−Ag. As F − was transferred to adjacent Si by Ag(T4) one by one, the Si got away from the wafer in the form of SiF 4 when it bonded with enough F − while Ag(T4) was still attached onto the Si wafer ready for next transfer. Cyclic voltammetry tests confirmed that Ag can improve the etching rate by transferring F − to Si

  12. Static and dynamic characterization of robust superhydrophobic surfaces built from nano-flowers on silicon micro-post arrays

    KAUST Repository

    Chen, Longquan

    2010-09-01

    Superhydrophobic nano-flower surfaces were fabricated using MEMS technology and microwave plasma-enhanced chemical vapor deposition (MPCVD) of carbon nanotubes on silicon micro-post array surfaces. The nano-flower structures can be readily formed within 1-2 min on the micro-post arrays with the spacing ranging from 25 to 30 μm. The petals of the nano-flowers consisted of clusters of multi-wall carbon nanotubes. Patterned nano-flower structures were characterized using various microscopy techniques. After MPCVD, the apparent contact angle (160 ± 0.2°), abbreviated as ACA (defined as the measured angle between the apparent solid surface and the tangent to the liquid-fluid interface), of the nano-flower surfaces increased by 139% compared with that of the silicon micro-post arrays. The measured ACA of the nano-flower surface is consistent with the predicted ACA from a modified Cassie-Baxter equation. A high-speed CCD camera was used to study droplet impact dynamics on various micro/nanostructured surfaces. Both static testing (ACA and sliding angle) and droplet impact dynamics demonstrated that, among seven different micro/nanostructured surfaces, the nano-flower surfaces are the most robust superhydrophobic surfaces. © 2010 IOP Publishing Ltd.

  13. Static and dynamic characterization of robust superhydrophobic surfaces built from nano-flowers on silicon micro-post arrays

    KAUST Repository

    Chen, Longquan; Xiao, Zhiyong; Chan, Philip C H; Lee, Yi-Kuen

    2010-01-01

    Superhydrophobic nano-flower surfaces were fabricated using MEMS technology and microwave plasma-enhanced chemical vapor deposition (MPCVD) of carbon nanotubes on silicon micro-post array surfaces. The nano-flower structures can be readily formed within 1-2 min on the micro-post arrays with the spacing ranging from 25 to 30 μm. The petals of the nano-flowers consisted of clusters of multi-wall carbon nanotubes. Patterned nano-flower structures were characterized using various microscopy techniques. After MPCVD, the apparent contact angle (160 ± 0.2°), abbreviated as ACA (defined as the measured angle between the apparent solid surface and the tangent to the liquid-fluid interface), of the nano-flower surfaces increased by 139% compared with that of the silicon micro-post arrays. The measured ACA of the nano-flower surface is consistent with the predicted ACA from a modified Cassie-Baxter equation. A high-speed CCD camera was used to study droplet impact dynamics on various micro/nanostructured surfaces. Both static testing (ACA and sliding angle) and droplet impact dynamics demonstrated that, among seven different micro/nanostructured surfaces, the nano-flower surfaces are the most robust superhydrophobic surfaces. © 2010 IOP Publishing Ltd.

  14. Silicon PIN diode hybrid arrays for charged particle detection: Building blocks for vertex detectors at the SSC

    International Nuclear Information System (INIS)

    Kramer, G.; Gaalema, S.; Shapiro, S.L.; Dunwoodie, W.M.; Arens, J.F.; Jernigan, J.G.

    1989-05-01

    Two-dimensional arrays of solid state detectors have long been used in visible and infrared systems. Hybrid arrays with separately optimized detector and readout substrates have been extensively developed for infrared sensors. The characteristics and use of these infrared readout chips with silicon PIN diode arrays produced by MICRON SEMICONDUCTOR for detecting high-energy particles are reported. Some of these arrays have been produced in formats as large as 512 /times/ 512 pixels; others have been radiation hardened to total dose levels beyond 1 Mrad. Data generation rates of 380 megasamples/second have been achieved. Analog and digital signal transmission and processing techniques have also been developed to accept and reduce these high data rates. 9 refs., 15 figs., 2 tabs

  15. Two-dimensional optical phased array antenna on silicon-on-insulator.

    Science.gov (United States)

    Van Acoleyen, Karel; Rogier, Hendrik; Baets, Roel

    2010-06-21

    Optical wireless links can offer a very large bandwidth and can act as a complementary technology to radiofrequency links. Optical components nowadays are however rather bulky. Therefore, we have investigated the potential of silicon photonics to fabricated integrated components for wireless optical communication. This paper presents a two-dimensional phased array antenna consisting of grating couplers that couple light off-chip. Wavelength steering of $0.24 degrees /nm is presented reducing the need of active phase modulators. The needed steering range is $1.5 degrees . The 3dB angular coverage range of these antennas is about $0.007pi sr with a directivity of more than 38dBi and antenna losses smaller than 3dB.

  16. Fluorinion transfer in silver-assisted chemical etching for silicon nanowires arrays

    Science.gov (United States)

    Feng, Tianyu; Xu, Youlong; Zhang, Zhengwei; Mao, Shengchun

    2015-08-01

    Uniform silicon nanowires arrays (SiNWAs) were fabricated on unpolished rough silicon wafers through KOH pretreatment followed by silver-assisted chemical etching (SACE). Density functional theory (DFT) calculations were used to investigate the function of silver (Ag) at atomic scale in the etching process. Among three adsorption sites of Ag atom on Si(1 0 0) surface, Ag(T4) above the fourth-layer surface Si atoms could transfer fluorinion (F-) to adjacent Si successfully due to its stronger electrostatic attraction force between Ag(T4) and F-, smaller azimuth angle of Fsbnd Ag(T4)sbnd Si, shorter bond length of Fsbnd Si compared with Fsbnd Ag. As F- was transferred to adjacent Si by Ag(T4) one by one, the Si got away from the wafer in the form of SiF4 when it bonded with enough F- while Ag(T4) was still attached onto the Si wafer ready for next transfer. Cyclic voltammetry tests confirmed that Ag can improve the etching rate by transferring F- to Si.

  17. Electronic transport mechanisms in scaled gate-all-around silicon nanowire transistor arrays

    Energy Technology Data Exchange (ETDEWEB)

    Clément, N., E-mail: nicolas.clement@iemn.univ-lille1.fr, E-mail: guilhem.larrieu@laas.fr; Han, X. L. [Institute of Electronics, Microelectronics and Nanotechnology, CNRS, Avenue Poincaré, 59652 Villeneuve d' Ascq (France); Larrieu, G., E-mail: nicolas.clement@iemn.univ-lille1.fr, E-mail: guilhem.larrieu@laas.fr [Laboratory for Analysis and Architecture of Systems (LAAS), CNRS, Universite de Toulouse, 7 Avenue Colonel Roche, 31077 Toulouse (France)

    2013-12-23

    Low-frequency noise is used to study the electronic transport in arrays of 14 nm gate length vertical silicon nanowire devices. We demonstrate that, even at such scaling, the electrostatic control of the gate-all-around is sufficient in the sub-threshold voltage region to confine charges in the heart of the wire, and the extremely low noise level is comparable to that of high quality epitaxial layers. Although contact noise can already be a source of poor transistor operation above threshold voltage for few nanowires, nanowire parallelization drastically reduces its impact.

  18. Initial steps toward the realization of large area arrays of single photon counting pixels based on polycrystalline silicon TFTs

    Science.gov (United States)

    Liang, Albert K.; Koniczek, Martin; Antonuk, Larry E.; El-Mohri, Youcef; Zhao, Qihua; Jiang, Hao; Street, Robert A.; Lu, Jeng Ping

    2014-03-01

    The thin-film semiconductor processing methods that enabled creation of inexpensive liquid crystal displays based on amorphous silicon transistors for cell phones and televisions, as well as desktop, laptop and mobile computers, also facilitated the development of devices that have become ubiquitous in medical x-ray imaging environments. These devices, called active matrix flat-panel imagers (AMFPIs), measure the integrated signal generated by incident X rays and offer detection areas as large as ~43×43 cm2. In recent years, there has been growing interest in medical x-ray imagers that record information from X ray photons on an individual basis. However, such photon counting devices have generally been based on crystalline silicon, a material not inherently suited to the cost-effective manufacture of monolithic devices of a size comparable to that of AMFPIs. Motivated by these considerations, we have developed an initial set of small area prototype arrays using thin-film processing methods and polycrystalline silicon transistors. These prototypes were developed in the spirit of exploring the possibility of creating large area arrays offering single photon counting capabilities and, to our knowledge, are the first photon counting arrays fabricated using thin film techniques. In this paper, the architecture of the prototype pixels is presented and considerations that influenced the design of the pixel circuits, including amplifier noise, TFT performance variations, and minimum feature size, are discussed.

  19. Flat-plate solar array project. Volume 1: Executive summary

    Science.gov (United States)

    Callaghan, W.; Mcdonald, R.

    1986-01-01

    In 1975, the U.S. Government contracted the Jet Propulsion Lab. to develop, by 1985, in conjunction with industry, the photovoltaics (PV) module and array technology required for widespread use of photovoltaics as a significant terrestrial energy source. As a result, a project that eventually became known as the Flat Plate Solar Array (FSA) Project was formed to manage an industry, university, and Government team to perform the necessary research and development. The original goals were to achieve widespread commercial use of PV modules and arrays through the development of technology that would allow them to be profitably sold for $1.07/peak watts (1985 dollars). A 10% module conversion efficiency and a 20 year lifetime were also goals. It is intended that the executive summary provide the means by which one can gain a perspective on 11 years of terrestrial photovoltaic research and development conducted by the FSA Project.

  20. BRDF-dependent accuracy of array-projection-based 3D sensors.

    Science.gov (United States)

    Heist, Stefan; Kühmstedt, Peter; Tünnermann, Andreas; Notni, Gunther

    2017-03-10

    In order to perform high-speed three-dimensional (3D) shape measurements with structured light systems, high-speed projectors are required. One possibility is an array projector, which allows pattern projection at several tens of kilohertz by switching on and off the LEDs of various slide projectors. The different projection centers require a separate analysis, as the intensity received by the cameras depends on the projection direction and the object's bidirectional reflectance distribution function (BRDF). In this contribution, we investigate the BRDF-dependent errors of array-projection-based 3D sensors and propose an error compensation process.

  1. Magnetic structure of cross-shaped permalloy arrays embedded in silicon wafers

    International Nuclear Information System (INIS)

    Machida, Kenji; Tezuka, Tomoyuki; Yamamoto, Takahiro; Ishibashi, Takayuki; Morishita, Yoshitaka; Koukitu, Akinori; Sato, Katsuaki

    2005-01-01

    This paper describes the observed magnetic structure and the micromagnetic simulation of cross-shaped, permalloy (Ni 80 Fe 20 ) arrays embedded in silicon wafers. The nano-scale-width, cross-shaped patterns were fabricated using the damascene technique, electron beam lithography, and chemical mechanical polishing. The magnetic poles were observed as two pairs of bright and dark spots at the ends of the crossed-bars using a magnetic force microscope. The force gradient distributions were simulated based on micromagnetic calculations and tip's stray field calculations using the integral equation method. This process of calculation successfully explains the appearance of the poles and complicated spin structure at the crossing region

  2. Silicon photomultiplier arrays for the LHCb scintillating fibre tracker

    CERN Multimedia

    Girard, Olivier Goran; Kuonen, Axel Kevin; Stramaglia, Maria Elena

    2017-01-01

    For the LHCb detector upgrade in 2019, a large scale scintillating fibre tracker read out with silicon photomultipliers is under construction. The harsh radiation environment (neutron and ionising radiation), the 40MHz read-out rate of the trigger less system and the large detector surface of 320m2 impose many challenges. We present the results from lab tests with 1MeV electrons and from the SPS test facility at CERN for the mulitchannel SiPM array that combines peak photo-detection efficiency of 48% and extremely low correlated noise. The measurements were performed with detectors irradiated with neutrons up to a fluence of 12*1011 neq/cm2 and single photon detection was maintained. First results of the characterization of the pre-series of 500 detectors delivered by Hamamatsu and irradiation studies on a large sample will be included.

  3. An accurate projection algorithm for array processor based SPECT systems

    International Nuclear Information System (INIS)

    King, M.A.; Schwinger, R.B.; Cool, S.L.

    1985-01-01

    A data re-projection algorithm has been developed for use in single photon emission computed tomography (SPECT) on an array processor based computer system. The algorithm makes use of an accurate representation of pixel activity (uniform square pixel model of intensity distribution), and is rapidly performed due to the efficient handling of an array based algorithm and the Fast Fourier Transform (FFT) on parallel processing hardware. The algorithm consists of using a pixel driven nearest neighbour projection operation to an array of subdivided projection bins. This result is then convolved with the projected uniform square pixel distribution before being compressed to original bin size. This distribution varies with projection angle and is explicitly calculated. The FFT combined with a frequency space multiplication is used instead of a spatial convolution for more rapid execution. The new algorithm was tested against other commonly used projection algorithms by comparing the accuracy of projections of a simulated transverse section of the abdomen against analytically determined projections of that transverse section. The new algorithm was found to yield comparable or better standard error and yet result in easier and more efficient implementation on parallel hardware. Applications of the algorithm include iterative reconstruction and attenuation correction schemes and evaluation of regions of interest in dynamic and gated SPECT

  4. Defect level characterization of silicon nanowire arrays: Towards novel experimental paradigms

    Energy Technology Data Exchange (ETDEWEB)

    Carapezzi, Stefania; Castaldini, Antonio; Cavallini, Anna [Department of Physics and Astronomy, University of Bologna, V.le Berti Pichat 6/2, Bologna (Italy); Irrera, Alessia [IPCF CNR, Viale Stagno D' Alcontres n. 37-98158, Messina, Italy and MATIS IMM CNR, Viale Santa Sofia n. 64, 95123 Catania (Italy)

    2014-02-21

    The huge amount of knowledge, and infrastructures, brought by silicon (Si) technology, make Si Nanowires (NWs) an ideal choice for nano-electronic Si-based devices. This, in turn, challenges the scientific research to adapt the technical and theoretical paradigms, at the base of established experimental techniques, in order to probe the properties of these systems. Metal-assisted wet-Chemical Etching (MaCE) [1, 2] is a promising fast, easy and cheap method to grow high aspect-ratio aligned Si NWs. Further, contrary to other fabrication methods, this method avoids the possible detrimental effects related to Au diffusion into NWs. We investigated the bandgap level diagram of MaCE Si NW arrays, phosphorous-doped, by means of Deep Level Transient Spectroscopy. The presence of both shallow and deep levels has been detected. The results have been examined in the light of the specificity of the MaCE growth. The study of the electronic levels in Si NWs is, of course, of capital importance in view of the integration of Si NW arrays as active layers in actual devices.

  5. Silicon-on-insulator based nanopore cavity arrays for lipid membrane investigation.

    Science.gov (United States)

    Buchholz, K; Tinazli, A; Kleefen, A; Dorfner, D; Pedone, D; Rant, U; Tampé, R; Abstreiter, G; Tornow, M

    2008-11-05

    We present the fabrication and characterization of nanopore microcavities for the investigation of transport processes in suspended lipid membranes. The cavities are situated below the surface of silicon-on-insulator (SOI) substrates. Single cavities and large area arrays were prepared using high resolution electron-beam lithography in combination with reactive ion etching (RIE) and wet chemical sacrificial underetching. The locally separated compartments have a circular shape and allow the enclosure of picoliter volume aqueous solutions. They are sealed at their top by a 250 nm thin Si membrane featuring pores with diameters from 2 µm down to 220 nm. The Si surface exhibits excellent smoothness and homogeneity as verified by AFM analysis. As biophysical test system we deposited lipid membranes by vesicle fusion, and demonstrated their fluid-like properties by fluorescence recovery after photobleaching. As clearly indicated by AFM measurements in aqueous buffer solution, intact lipid membranes successfully spanned the pores. The nanopore cavity arrays have potential applications in diagnostics and pharmaceutical research on transmembrane proteins.

  6. Uruguay project - Metalic silicon manufacturing. Palmar location study

    International Nuclear Information System (INIS)

    2003-01-01

    This work is about the Soriano town possibilities offered to Rima Industrial S.A in relation with the metallic silicon project in Uruguay. In this zone there is the Palmar hydroelectric plant with a capacity of 33 MW and its development is part of the Rio Negro river

  7. Simple fabrication of closed-packed IR microlens arrays on silicon by femtosecond laser wet etching

    Science.gov (United States)

    Meng, Xiangwei; Chen, Feng; Yang, Qing; Bian, Hao; Du, Guangqing; Hou, Xun

    2015-10-01

    We demonstrate a simple route to fabricate closed-packed infrared (IR) silicon microlens arrays (MLAs) based on femtosecond laser irradiation assisted by wet etching method. The fabricated MLAs show high fill factor, smooth surface and good uniformity. They can be used as optical devices for IR applications. The exposure and etching parameters are optimized to obtain reproducible microlens with hexagonal and rectangular arrangements. The surface roughness of the concave MLAs is only 56 nm. This presented method is a maskless process and can flexibly change the size, shape and the fill factor of the MLAs by controlling the experimental parameters. The concave MLAs on silicon can work in IR region and can be used for IR sensors and imaging applications.

  8. Fabrication, characterization and testing of silicon photomultipliers for the Muon Portal Project

    International Nuclear Information System (INIS)

    La Rocca, P.; Billotta, S.; Blancato, A.A.; Bonanno, D.; Bonanno, G.; Fallica, G.; Garozzo, S.; Lo Presti, D.; Marano, D.; Pugliatti, C.; Riggi, F.; Romeo, G.; Santagati, G.; Valvo, G.

    2015-01-01

    The Muon Portal is a recently started Project aiming at the construction of a large area tracking detector that exploits the muon tomography technique to inspect the contents of traveling cargo containers. The detection planes will be made of plastic scintillator strips with embedded wavelength-shifting fibres. Special designed silicon photomultipliers will read the scintillation light transported by the fibres along the strips and a dedicated electronics will combine signals from different strips to reduce the overall number of channels, without loss of information. Different silicon photomultiplier prototypes, both with the p-on-n and n-on-p technologies, have been produced by STMicroelectronics during the last years. In this paper we present the main characteristics of the silicon photomultipliers designed for the Muon Portal Project and describe the setup and the procedure implemented for the characterization of these devices, giving some statistical results obtained from the test of a first batch of silicon photomultipliers

  9. Fabrication, characterization and testing of silicon photomultipliers for the Muon Portal Project

    Energy Technology Data Exchange (ETDEWEB)

    La Rocca, P., E-mail: paola.larocca@ct.infn.it [Dipartimento di Fisica e Astronomia - Catania (Italy); INFN - Sezione di Catania (Italy); Billotta, S. [INAF - Osservatorio Astrofisico di Catania (Italy); Blancato, A.A.; Bonanno, D. [Dipartimento di Fisica e Astronomia - Catania (Italy); Bonanno, G. [INAF - Osservatorio Astrofisico di Catania (Italy); Fallica, G. [STMicroelectronics - Catania (Italy); Garozzo, S. [INAF - Osservatorio Astrofisico di Catania (Italy); Lo Presti, D. [Dipartimento di Fisica e Astronomia - Catania (Italy); INFN - Sezione di Catania (Italy); Marano, D. [INAF - Osservatorio Astrofisico di Catania (Italy); Pugliatti, C.; Riggi, F. [Dipartimento di Fisica e Astronomia - Catania (Italy); INFN - Sezione di Catania (Italy); Romeo, G. [INAF - Osservatorio Astrofisico di Catania (Italy); Santagati, G. [Dipartimento di Fisica e Astronomia - Catania (Italy); INFN - Sezione di Catania (Italy); Valvo, G. [STMicroelectronics - Catania (Italy)

    2015-07-01

    The Muon Portal is a recently started Project aiming at the construction of a large area tracking detector that exploits the muon tomography technique to inspect the contents of traveling cargo containers. The detection planes will be made of plastic scintillator strips with embedded wavelength-shifting fibres. Special designed silicon photomultipliers will read the scintillation light transported by the fibres along the strips and a dedicated electronics will combine signals from different strips to reduce the overall number of channels, without loss of information. Different silicon photomultiplier prototypes, both with the p-on-n and n-on-p technologies, have been produced by STMicroelectronics during the last years. In this paper we present the main characteristics of the silicon photomultipliers designed for the Muon Portal Project and describe the setup and the procedure implemented for the characterization of these devices, giving some statistical results obtained from the test of a first batch of silicon photomultipliers.

  10. Enhancing the far-ultraviolet sensitivity of silicon complementary metal oxide semiconductor imaging arrays

    Science.gov (United States)

    Retherford, Kurt D.; Bai, Yibin; Ryu, Kevin K.; Gregory, James A.; Welander, Paul B.; Davis, Michael W.; Greathouse, Thomas K.; Winters, Gregory S.; Suntharalingam, Vyshnavi; Beletic, James W.

    2015-10-01

    We report our progress toward optimizing backside-illuminated silicon P-type intrinsic N-type complementary metal oxide semiconductor devices developed by Teledyne Imaging Sensors (TIS) for far-ultraviolet (UV) planetary science applications. This project was motivated by initial measurements at Southwest Research Institute of the far-UV responsivity of backside-illuminated silicon PIN photodiode test structures, which revealed a promising QE in the 100 to 200 nm range. Our effort to advance the capabilities of thinned silicon wafers capitalizes on recent innovations in molecular beam epitaxy (MBE) doping processes. Key achievements to date include the following: (1) representative silicon test wafers were fabricated by TIS, and set up for MBE processing at MIT Lincoln Laboratory; (2) preliminary far-UV detector QE simulation runs were completed to aid MBE layer design; (3) detector fabrication was completed through the pre-MBE step; and (4) initial testing of the MBE doping process was performed on monitoring wafers, with detailed quality assessments.

  11. Silicon-Light: a European FP7 Project Aiming at High Efficiency Thin Film Silicon Solar Cells on Foil

    DEFF Research Database (Denmark)

    Soppe, W.; Haug, F.-J.; Couty, P.

    2011-01-01

    Silicon-Light is a European FP7 project, which started January 1st, 2010 and aims at development of low cost, high-efficiency thin film silicon solar cells on foil. Three main routes are explored to achieve these goals: a) advanced light trapping by implementing nanotexturization through UV Nano...... calculations of ideal nanotextures for light trapping in thin film silicon solar cells; the fabrication of masters and the replication and roll-to-roll fabrication of these nanotextures. Further, results on ITO variants with improved work function are presented. Finally, the status of cell fabrication on foils...

  12. Performance of a PET detector module utilizing an array of silicon photodiodes to identify the crystal of interaction

    International Nuclear Information System (INIS)

    Moses, W.W.; Derenzo, S.E.; Nutt, R.; Digby, W.M.; Williams, C.W.; Andreaco, M.

    1993-01-01

    The authors initial performance results for a new multi-layer PET detector module consisting of an array of 3 mm square by 30 mm deep BGO crystals coupled on one end to a single photomultiplier tube and on the opposite end to an array of 3 mm square silicon photodiodes. The photomultiplier tube provides an accurate timing pulse and energy discrimination for all the crystals in the module, while the silicon photodiodes identify the crystal of interaction. When a single BGO crystal at +25 C is excited with 511 keV photons, the authors measure a photodiode signal centered at 700 electrons (e - ) with noise of 375 e - fwhm. When a four crystal/photodiode module is excited with a collimated line source of 511 keV photons, the crystal of interaction is correctly identified 82% of the time. The misidentification rate can be greatly reduced and an 8 x 8 crystal/photodiode module constructed by using thicker depletion layer photodiodes or cooling to 0 C

  13. Far-infrared elastic scattering proposal for the Avogadro Project's silicon spheres

    Science.gov (United States)

    Humayun, Muhammad Hamza; Khan, Imran; Azeem, Farhan; Chaudhry, Muhammad Rehan; Gökay, Ulaş Sabahattin; Murib, Mohammed Sharif; Serpengüzel, Ali

    2018-05-01

    Avogadro constant determines the number of particles in one mole of a substance, thus relating the molar mass of the substance to the mass of this substance. Avogadro constant is related to Système Internationale base units by defining the very concept of chemical quantity. Revisions of the base units created a need to redefine the Avogadro constant, where a collaborative work called the Avogadro Project is established to employ optical interferometry to measure the diameter of high quality 100 mm silicon spheres. We propose far-infrared spectroscopy for determining the Avogadro constant by using elastic scattering from the 100 mm Avogadro Project silicon spheres. Similar spectroscopic methods are already in use in the near-infrared, relating whispering gallery modes of the 1 mm silicon spheres to the diameter of the spheres. We present numerical simulations in the far-infrared and the near-infrared, as well as spatially scaled down elastic scattering measurements in the near-infrared. These numerical and experimental results show that, the diameter measurements of 100 mm single crystal silicon spheres with elastic scattering in the far-infrared can be considered as an alternative to optical interferometry.

  14. Broadband High Efficiency Fractal-Like and Diverse Geometry Silicon Nanowire Arrays for Photovoltaic Applications

    Science.gov (United States)

    AL-Zoubi, Omar H.

    Solar energy has many advantages over conventional sources of energy. It is abundant, clean and sustainable. One way to convert solar energy directly into electrical energy is by using the photovoltaic solar cells (PVSC). Despite PVSC are becoming economically competitive, they still have high cost and low light to electricity conversion efficiency. Therefore, increasing the efficiency and reducing the cost are key elements for producing economically more competitive PVSC that would have significant impact on energy market and saving environment. A significant percentage of the PVSC cost is due to the materials cost. For that, thin films PVSC have been proposed which offer the benefits of the low amount of material and fabrication costs. Regrettably, thin film PVSC show poor light to electricity conversion efficiency because of many factors especially the high optical losses. To enhance conversion efficiency, numerous techniques have been proposed to reduce the optical losses and to enhance the absorption of light in thin film PVSC. One promising technique is the nanowire (NW) arrays in general and the silicon nanowire (SiNW) arrays in particular. The purpose of this research is to introduce vertically aligned SiNW arrays with enhanced and broadband absorption covering the entire solar spectrum while simultaneously reducing the amount of material used. To this end, we apply new concept for designing SiNW arrays based on employing diversity of physical dimensions, especially radial diversity within certain lattice configurations. In order to study the interaction of light with SiNW arrays and compute their optical properties, electromagnetic numerical modeling is used. A commercial numerical electromagnetic solver software package, high frequency structure simulation (HFSS), is utilized to model the SiNW arrays and to study their optical properties. We studied different geometries factors that affect the optical properties of SiNW arrays. Based on this study, we

  15. Brazilian Decimetric Array (BDA) project - Phase II

    Science.gov (United States)

    Faria, C.; Stephany, S.; Sawant, H. S.; Cecatto, J. R.; Fernandes, F. C. R.

    2010-02-01

    The configuration of the second phase of the Brazilian Decimetric Array (BDA), installed at Cachoeira Paulista, Brazil (Longitude 45° 0‧ 20″ W and Latitude 22° 41‧ 19″ S), is a T-shaped array where 21 antennas are being added to existing 5 antennas of the first phase. In the third phase, in each arm of the T array, four more antennas will be added and baselines will be increased to 2.5 × 1.25 km in east-west and south directions, respectively. The antennas will be equally spaced at the distances of 250 meters from the central antenna of the T-array. Also, the frequency range will be increased to 1.2-1.7, 2.8 and 5.6 GHz. The Second phase of the BDA should be operational by the middle of 2010 and will operate in the frequency range of (1.2-1.7) GHz for solar and non solar observations. Here, we present the characteristics of the second phase of the BDA project, details of the array configuration, the u-v coverage, the synthesized beam obtained for the proposed configuration.

  16. Progress Report 15, December 1979-April 1980, and proceedings of the fifteenth Project Integration Meeting

    Energy Technology Data Exchange (ETDEWEB)

    1980-01-01

    Progress made by the Low-Cost Solar Array Project during the period December 1979 to April 1980 is reported. Reports on project analysis and integration; technology development in silicon material, large-area silicon sheet and encapsulation; production process and equipment development; engineering; and operations are included. Also, a report on, and copies of visual presentations made at, the Project Integration Meeting held April 2 and 3, 1980, are included.

  17. The influence of passivation and photovoltaic properties of α-Si:H coverage on silicon nanowire array solar cells

    Science.gov (United States)

    2013-01-01

    Silicon nanowire (SiNW) arrays for radial p-n junction solar cells offer potential advantages of light trapping effects and quick charge collection. Nevertheless, lower open circuit voltages (Voc) lead to lower energy conversion efficiencies. In such cases, the performance of the solar cells depends critically on the quality of the SiNW interfaces. In this study, SiNW core-shell solar cells have been fabricated by growing crystalline silicon (c-Si) nanowires via the metal-assisted chemical etching method and by depositing hydrogenated amorphous silicon (α-Si:H) via the plasma-enhanced chemical vapor deposition (PECVD) method. The influence of deposition parameters on the coverage and, consequently, the passivation and photovoltaic properties of α-Si:H layers on SiNW solar cells have been analyzed. PMID:24059343

  18. Integration of silicon-based neural probes and micro-drive arrays for chronic recording of large populations of neurons in behaving animals.

    Science.gov (United States)

    Michon, Frédéric; Aarts, Arno; Holzhammer, Tobias; Ruther, Patrick; Borghs, Gustaaf; McNaughton, Bruce; Kloosterman, Fabian

    2016-08-01

    Understanding how neuronal assemblies underlie cognitive function is a fundamental question in system neuroscience. It poses the technical challenge to monitor the activity of populations of neurons, potentially widely separated, in relation to behaviour. In this paper, we present a new system which aims at simultaneously recording from a large population of neurons from multiple separated brain regions in freely behaving animals. The concept of the new device is to combine the benefits of two existing electrophysiological techniques, i.e. the flexibility and modularity of micro-drive arrays and the high sampling ability of electrode-dense silicon probes. Newly engineered long bendable silicon probes were integrated into a micro-drive array. The resulting device can carry up to 16 independently movable silicon probes, each carrying 16 recording sites. Populations of neurons were recorded simultaneously in multiple cortical and/or hippocampal sites in two freely behaving implanted rats. Current approaches to monitor neuronal activity either allow to flexibly record from multiple widely separated brain regions (micro-drive arrays) but with a limited sampling density or to provide denser sampling at the expense of a flexible placement in multiple brain regions (neural probes). By combining these two approaches and their benefits, we present an alternative solution for flexible and simultaneous recordings from widely distributed populations of neurons in freely behaving rats.

  19. Optical absorption enhancement in silicon nanowire arrays with a large lattice constant for photovoltaic applications.

    Science.gov (United States)

    Lin, Chenxi; Povinelli, Michelle L

    2009-10-26

    In this paper, we use the transfer matrix method to calculate the optical absorptance of vertically-aligned silicon nanowire (SiNW) arrays. For fixed filling ratio, significant optical absorption enhancement occurs when the lattice constant is increased from 100 nm to 600 nm. The enhancement arises from an increase in field concentration within the nanowire as well as excitation of guided resonance modes. We quantify the absorption enhancement in terms of ultimate efficiency. Results show that an optimized SiNW array with lattice constant of 600 nm and wire diameter of 540 nm has a 72.4% higher ultimate efficiency than a Si thin film of equal thickness. The enhancement effect can be maintained over a large range of incidence angles.

  20. Evaluation of Matrix9 silicon photomultiplier array for small-animal PET

    Science.gov (United States)

    Du, Junwei; Schmall, Jeffrey P.; Yang, Yongfeng; Di, Kun; Roncali, Emilie; Mitchell, Gregory S.; Buckley, Steve; Jackson, Carl; Cherry, Simon R.

    2015-01-01

    Purpose: The MatrixSL-9-30035-OEM (Matrix9) from SensL is a large-area silicon photomultiplier (SiPM) photodetector module consisting of a 3 × 3 array of 4 × 4 element SiPM arrays (total of 144 SiPM pixels) and incorporates SensL’s front-end electronics board and coincidence board. Each SiPM pixel measures 3.16 × 3.16 mm2 and the total size of the detector head is 47.8 × 46.3 mm2. Using 8 × 8 polished LSO/LYSO arrays (pitch 1.5 mm) the performance of this detector system (SiPM array and readout electronics) was evaluated with a view for its eventual use in small-animal positron emission tomography (PET). Methods: Measurements of noise, signal, signal-to-noise ratio, energy resolution, flood histogram quality, timing resolution, and array trigger error were obtained at different bias voltages (28.0–32.5 V in 0.5 V intervals) and at different temperatures (5 °C–25 °C in 5 °C degree steps) to find the optimal operating conditions. Results: The best measured signal-to-noise ratio and flood histogram quality for 511 keV gamma photons were obtained at a bias voltage of 30.0 V and a temperature of 5 °C. The energy resolution and timing resolution under these conditions were 14.2% ± 0.1% and 4.2 ± 0.1 ns, respectively. The flood histograms show that all the crystals in the 1.5 mm pitch LSO array can be clearly identified and that smaller crystal pitches can also be resolved. Flood histogram quality was also calculated using different center of gravity based positioning algorithms. Improved and more robust results were achieved using the local 9 pixels for positioning along with an energy offset calibration. To evaluate the front-end detector readout, and multiplexing efficiency, an array trigger error metric is introduced and measured at different lower energy thresholds. Using a lower energy threshold greater than 150 keV effectively eliminates any mispositioning between SiPM arrays. Conclusions: In summary, the Matrix9 detector system can resolve

  1. Evaluation of Matrix9 silicon photomultiplier array for small-animal PET

    International Nuclear Information System (INIS)

    Du, Junwei; Schmall, Jeffrey P.; Yang, Yongfeng; Di, Kun; Roncali, Emilie; Mitchell, Gregory S.; Buckley, Steve; Jackson, Carl; Cherry, Simon R.

    2015-01-01

    Purpose: The MatrixSL-9-30035-OEM (Matrix9) from SensL is a large-area silicon photomultiplier (SiPM) photodetector module consisting of a 3 × 3 array of 4 × 4 element SiPM arrays (total of 144 SiPM pixels) and incorporates SensL’s front-end electronics board and coincidence board. Each SiPM pixel measures 3.16 × 3.16 mm 2 and the total size of the detector head is 47.8 × 46.3 mm 2 . Using 8 × 8 polished LSO/LYSO arrays (pitch 1.5 mm) the performance of this detector system (SiPM array and readout electronics) was evaluated with a view for its eventual use in small-animal positron emission tomography (PET). Methods: Measurements of noise, signal, signal-to-noise ratio, energy resolution, flood histogram quality, timing resolution, and array trigger error were obtained at different bias voltages (28.0–32.5 V in 0.5 V intervals) and at different temperatures (5 °C–25 °C in 5 °C degree steps) to find the optimal operating conditions. Results: The best measured signal-to-noise ratio and flood histogram quality for 511 keV gamma photons were obtained at a bias voltage of 30.0 V and a temperature of 5 °C. The energy resolution and timing resolution under these conditions were 14.2% ± 0.1% and 4.2 ± 0.1 ns, respectively. The flood histograms show that all the crystals in the 1.5 mm pitch LSO array can be clearly identified and that smaller crystal pitches can also be resolved. Flood histogram quality was also calculated using different center of gravity based positioning algorithms. Improved and more robust results were achieved using the local 9 pixels for positioning along with an energy offset calibration. To evaluate the front-end detector readout, and multiplexing efficiency, an array trigger error metric is introduced and measured at different lower energy thresholds. Using a lower energy threshold greater than 150 keV effectively eliminates any mispositioning between SiPM arrays. Conclusions: In summary, the Matrix9 detector system can

  2. Design of photonic phased array switches using nano electromechanical systems on silicon-on-insulator integration platform

    Science.gov (United States)

    Hussein, Ali Abdulsattar

    This thesis presents an introduction to the design and simulation of a novel class of integrated photonic phased array switch elements. The main objective is to use nano-electromechanical (NEMS) based phase shifters of cascaded under-etched slot nanowires that are compact in size and require a small amount of power to operate them. The structure of the switch elements is organized such that it brings the phase shifting elements to the exterior sides of the photonic circuits. The transition slot couplers, used to interconnect the phase shifters, are designed to enable biasing one of the silicon beams of each phase shifter from an electrode located at the side of the phase shifter. The other silicon beam of each phase shifter is biased through the rest of the silicon structure of the switch element, which is taken as a ground. Phased array switch elements ranging from 2x2 up to 8x8 multiple-inputs/multiple-outputs (MIMO) are conveniently designed within reasonable footprints native to the current fabrication technologies. Chapter one presents the general layout of the various designs of the switch elements and demonstrates their novel features. This demonstration will show how waveguide disturbances in the interconnecting network from conventional switch elements can be avoided by adopting an innovative design. Some possible applications for the designed switch elements of different sizes and topologies are indicated throughout the chapter. Chapter two presents the design of the multimode interference (MMI) couplers used in the switch elements as splitters, combiners and waveguide crossovers. Simulation data and design methodologies for the multimode couplers of interest are detailed in this chapter. Chapter three presents the design and analysis of the NEMS-operated phase shifters. Both simulations and numerical analysis are utilized in the design of a 0°-180° capable NEMS-operated phase shifter. Additionally, the response of some of the designed photonic phased

  3. SU-E-J-91: Novel Epitaxial Silicon Array for Quality Assurance in Photon and Proton Therapy

    International Nuclear Information System (INIS)

    Talamonti, C; Zani, M; Scaringella, M; Bruzzi, M; Bucciolini, M; Menichelli, D; Friedl, F

    2014-01-01

    Purpose: to demonstrate suitability of a novel silicon array for measuring the dose properties of highly conformal photon and proton beams. Methods: prototype under test is a 24cm long linear array prototype, although the underlying technology is suitable to construct 2D arrays as well. It is based on a 64pixels monolithic sensor with 1mm pixel pitch, made of epitaxial ptype silicon. Thanks to design modularity, more sensors can be placed side by side without breaking pixel pitch. Flattened and unflattened photon beams, as well as proton radiation from a cyclotron in pencil beam scanning mode, were considered. Measurements of beam characteristics as percentage depth doses, dose profiles, output factors and energy response, which are necessary to deliver radiation with high precision and reliability, were performed. Results: Dose rate independence with photons was verified in the dose per pulse range 0.03 to 2mGy. Results clearly indicate nondependence of the detector sensitivity both for flattened and unflattened beams, with a variation of at most 0.5percentage. OFs were obtained for field with a lateral size ranging from 0.8cm to 16cm and the results are in good agreement with ion chamber A1SL, max difference less than 1.5percentage. Field sizes and beam penumbra were measured and compared to EBT film results. Concerning proton beams, sensitivity independence on dose rate was verified by changing the beam current in the interval 2-130Gy/s. Field sizes and beam penumbra measurements are in agreement with data taken with a scintillating 2D array with 0.5mm resolution IBA Lynx, and a better penumbra definition than an array of ionization chambers IBA MatriXX is reached. Conclusion: The device is a novel and valuable tool for QA both for photon and proton dose delivery. All measurements demonstrated its capability to measure with high spatial resolution many crucial properties of the RT beam

  4. SU-E-J-91: Novel Epitaxial Silicon Array for Quality Assurance in Photon and Proton Therapy

    Energy Technology Data Exchange (ETDEWEB)

    Talamonti, C; Zani, M; Scaringella, M; Bruzzi, M; Bucciolini, M [University of Florence, Firenze (Italy); Menichelli, D; Friedl, F [IBA Dosimetry, Schwarzenbruck, Bavaria (Germany)

    2014-06-01

    Purpose: to demonstrate suitability of a novel silicon array for measuring the dose properties of highly conformal photon and proton beams. Methods: prototype under test is a 24cm long linear array prototype, although the underlying technology is suitable to construct 2D arrays as well. It is based on a 64pixels monolithic sensor with 1mm pixel pitch, made of epitaxial ptype silicon. Thanks to design modularity, more sensors can be placed side by side without breaking pixel pitch. Flattened and unflattened photon beams, as well as proton radiation from a cyclotron in pencil beam scanning mode, were considered. Measurements of beam characteristics as percentage depth doses, dose profiles, output factors and energy response, which are necessary to deliver radiation with high precision and reliability, were performed. Results: Dose rate independence with photons was verified in the dose per pulse range 0.03 to 2mGy. Results clearly indicate nondependence of the detector sensitivity both for flattened and unflattened beams, with a variation of at most 0.5percentage. OFs were obtained for field with a lateral size ranging from 0.8cm to 16cm and the results are in good agreement with ion chamber A1SL, max difference less than 1.5percentage. Field sizes and beam penumbra were measured and compared to EBT film results. Concerning proton beams, sensitivity independence on dose rate was verified by changing the beam current in the interval 2-130Gy/s. Field sizes and beam penumbra measurements are in agreement with data taken with a scintillating 2D array with 0.5mm resolution IBA Lynx, and a better penumbra definition than an array of ionization chambers IBA MatriXX is reached. Conclusion: The device is a novel and valuable tool for QA both for photon and proton dose delivery. All measurements demonstrated its capability to measure with high spatial resolution many crucial properties of the RT beam.

  5. Development of a Process for a High Capacity Arc Heater Production of Silicon for Solar Arrays

    Science.gov (United States)

    Reed, W. H.

    1979-01-01

    A program was established to develop a high temperature silicon production process using existing electric arc heater technology. Silicon tetrachloride and a reductant (sodium) are injected into an arc heated mixture of hydrogen and argon. Under these high temperature conditions, a very rapid reaction is expected to occur and proceed essentially to completion, yielding silicon and gaseous sodium chloride. Techniques for high temperature separation and collection were developed. Included in this report are: test system preparation; testing; injection techniques; kinetics; reaction demonstration; conclusions; and the project status.

  6. Array Automated Assembly Task Low Cost Silicon Solar Array Project. Phase 2. Annual technical report, September 20, 1977-December 31, 1978

    Energy Technology Data Exchange (ETDEWEB)

    Rhee, Sang S.; Jones, Gregory T.; Allison, Kimberly L.

    1978-01-01

    This program was conducted to develop and demonstrate those solar cells and module process steps which have the technological readiness or capability to achieve the 1986 LSA goals. Results are reported. Seventeen process groups were investigated. Very promising results were achieved. A laserscribe computer program was developed. It demonstrated that silicon solar cells could be trimmed and holed by laser without causing mechanical defects (i.e., microcracks) nor any major degradation in solar cell electrical performance. The silicon wafer surface preparation task demonstrated a low-cost, high throughput texturizing process readily adaptable to automation. Performance verification tests of a laser scanning system showed a limited capability to detect hidden cracks or defects in solar cells. A general review of currently available thick film printing equipment provided the indication that state-of-the-art technology can adequately transform the capability of current printing machines to the elevated rate of 7200 wafers per hour. The LFE System 8000 silicon nitride plasma deposition system with the inclusion of minor equipment modifications was shown to be consistent with the 1986 LSA pricing goals. The performance verification test of the silicon nitride A.R. coating process provided the result that texturized, A.R. coated solar cells display a 14.1% improvement in electrical performance over identical solar cells without an A.R. coating. A new electroless nickel plating system was installed and demonstrated a low-cost, high throughput process readily adaptable to automation. A multiple wafer dipping method was investigated and operational parameters defined. A flux removal method consisting of a three stage D.I. water cascade rinse system with ultrasonic agitator was found to be very promising. Also, a SAMICS cost analysis was performed. (WHK)

  7. Silicon Ingot Casting - Heat Exchanger Method (HEM). Multi-Wire Slicing - Fixed Abrasive Slicing Technique (Fast). Phase 4 Silicon Sheet Growth Development for the Large Area Sheet Task of the Low-Cost Solar Array Project

    Science.gov (United States)

    Schmid, F.

    1981-01-01

    The crystallinity of large HEM silicon ingots as a function of heat flow conditions is investigated. A balanced heat flow at the bottom of the ingot restricts spurious nucleation to the edge of the melted-back seed in contact with the crucible. Homogeneous resistivity distribution over all the ingot has been achieved. The positioning of diamonds electroplated on wirepacks used to slice silicon crystals is considered. The electroplating of diamonds on only the cutting edge is described and the improved slicing performance of these wires evaluated. An economic analysis of value added costs of HEM ingot casting and band saw sectioning indicates the projected add on cost of HEM is well below the 1986 allocation.

  8. Charge-partitioning study of a wide-pitch silicon micro-strip detector with a 64-channel CMOS preamplifier array

    International Nuclear Information System (INIS)

    Ikeda, H.; Tsuboyama, T.; Okuno, S.; Saitoh, Y.; Akamine, T.; Satoh, K.; Inoue, M.; Yamanaka, J.; Mandai, M.; Takeuchi, H.; Kitta, T.; Miyahara, S.; Kamiya, M.

    1996-01-01

    The wider pitch readout operation of a 50 μm-pitch double-sided silicon micro-strip detector has been studied specifically concerning its ohmic side. Every second readout and ganged configuration was examined by employing a newly developed 64-channel preamplifier array. The observed charge responses for collimated IR light were compared with a numerical model. (orig.)

  9. Periodic molybdenum disc array for light trapping in amorphous silicon layer

    Energy Technology Data Exchange (ETDEWEB)

    Wang, Jiwei; Deng, Changkai [International Center of Quantum and Molecular Structures, Materials Genome Institute, and Department of Physics, Shanghai University, 99 Shangda Road, Shanghai, 200444 China (China); Shanghai Advanced Research Institute, Chinese Academy of Sciences, 99 Haike Road, Shanghai, 201210 China (China); Yang, Kang; Chen, Haiyan, E-mail: chenhy@sari.ac.cn; Li, Dongdong; Chen, Xiaoyuan [Shanghai Advanced Research Institute, Chinese Academy of Sciences, 99 Haike Road, Shanghai, 201210 China (China); Ren, Wei, E-mail: renwei@shu.edu.cn [International Center of Quantum and Molecular Structures, Materials Genome Institute, and Department of Physics, Shanghai University, 99 Shangda Road, Shanghai, 200444 China (China)

    2016-05-15

    We demonstrate the light trapping effect in amorphous silicon (a-Si:H) layer by inserting a layer of periodic molybdenum disc array (MDA) between the a-Si:H layer and the quartz substrate, which forms a three-layer structure of Si/MDA/SiO{sub 2}. The MDA layer was fabricated by a new cost-effective method based on nano-imprint technology. Further light absorption enhancement was realized through altering the topography of MDA by annealing it at 700°C. The mechanism of light absorption enhancement in a-Si:H interfaced with MDA was analyzed, and the electric field distribution and light absorption curve of the different layers in the Si/MDA structure under light illumination of different wavelengths were simulated by employing numerical finite difference time domain (FDTD) solutions.

  10. Effect of van der Waals forces on thermal conductance at the interface of a single-wall carbon nanotube array and silicon

    Directory of Open Access Journals (Sweden)

    Ya Feng

    2014-12-01

    Full Text Available Molecular dynamics simulations are performed to evaluate the effect of van der Waals forces among single-wall carbon nanotubes (SWNTs on the interfacial thermal conductance between a SWNT array and silicon substrate. First, samples of SWNTs vertically aligned on silicon substrate are simulated, where both the number and arrangement of SWNTs are varied. Results reveal that the interfacial thermal conductance of a SWNT array/Si with van der Waals forces present is higher than when they are absent. To better understand how van der Waals forces affect heat transfer through the interface between SWNTs and silicon, further constructs of one SWNT surrounded by different numbers of other ones are studied, and the results show that the interfacial thermal conductance of the central SWNT increases with increasing van der Waals forces. Through analysis of the covalent bonds and vibrational density of states at the interface, we find that heat transfer across the interface is enhanced with a greater number of chemical bonds and that improved vibrational coupling of the two sides of the interface results in higher interfacial thermal conductance. Van der Waals forces stimulate heat transfer at the interface.

  11. Low cost silicon solar array project: Feasibility of low-cost, high-volume production of silane and pyrolysis of silane to semiconductor-grade silicon

    Science.gov (United States)

    Breneman, W. C.

    1978-01-01

    Silicon epitaxy analysis of silane produced in the Process Development Unit operating in a completely integrated mode consuming only hydrogen and metallurgical silicon resulted in film resistivities of up to 120 ohms cm N type. Preliminary kinetic studies of dichlorosilane disproportionation in the liquid phase have shown that 11.59% SiH4 is formed at equilibrium after 12 minutes contact time at 56 C. The fluid-bed reactor was operated continuously for 48 hours with a mixture of one percent silane in helium as the fluidizing gas. A high silane pyrolysis efficiency was obtained without the generation of excessive fines. Gas flow conditions near the base of the reactor were unfavorable for maintaining a bubbling bed with good heat transfer characteristics. Consequently, a porous agglomerate formed in the lower portion of the reactor. Dense coherent plating was obtained on the silicon seed particles which had remained fluidizied throughout the experiment.

  12. ISPA (imaging silicon pixel array) experiment

    CERN Multimedia

    Patrice Loïez

    2002-01-01

    The ISPA tube is a position-sensitive photon detector. It belongs to the family of hybrid photon detectors (HPD), recently developed by CERN and INFN with leading photodetector firms. HPDs confront in a vacuum envelope a photocathode and a silicon detector. This can be a single diode or a pixelized detector. The electrons generated by the photocathode are efficiently detected by the silicon anode by applying a high-voltage difference between them. ISPA tube can be used in high-energy applications as well as bio-medical and imaging applications.

  13. SERS activity of Au nanoparticles coated on an array of carbon nanotube nested into silicon nanoporous pillar

    International Nuclear Information System (INIS)

    Jiang Weifen; Zhang Yanfeng; Wang Yusheng; Xu Lei; Li Xinjian

    2011-01-01

    A novel composite structure, Au nanoparticles coated on a nest-shaped array of carbon nanotube nested into a silicon nanoporous pillar array (Au/NACNT/Si-NPA), was fabricated for surface-enhanced Raman scattering (SERS). The morphology of the Au/NACNT/Si-NPA composite structure was characterized with the aid of scanning electron microscopy, X-ray diffraction instrumentation and Transmission electron microscopy. Compared with SERS of rhodamine 6G (R6G) adsorbed on SERS-active Au substrate reported, the SERS signals of R6G adsorbed on these gold nanoparticles were obviously improved. This was attributed to the enlarged specific surface area for adsorption of target molecules brought by the nest-shaped CNTs structure.

  14. Progress Report 16 for the period April-September 1980, and the proceedings of the 16th Project Integration Meeting

    Energy Technology Data Exchange (ETDEWEB)

    McDonald, R.R.

    1980-01-01

    Progress made by the Low-Cost Solar Array Project during the period April to September 1980, is reported in detail. Progress on project analysis and integration; technology development in silicon material, large-area silicon sheet and encapsulation; production process and equipment development; engineering, and operations is described. A report on, and copies of visual presentations made at, the Project Integration Meeting held September 24 and 25, 1980 are included.

  15. Projection neuron circuits resolved using correlative array tomography

    Directory of Open Access Journals (Sweden)

    Daniele eOberti

    2011-04-01

    Full Text Available Assessment of three-dimensional morphological structure and synaptic connectivity is essential for a comprehensive understanding of neural processes controlling behavior. Different microscopy approaches have been proposed based on light microcopy (LM, electron microscopy (EM, or a combination of both. Correlative array tomography (CAT is a technique in which arrays of ultrathin serial sections are repeatedly stained with fluorescent antibodies against synaptic molecules and neurotransmitters and imaged with LM and EM (Micheva and Smith, 2007. The utility of this correlative approach is limited by the ability to preserve fluorescence and antigenicity on the one hand, and EM tissue ultrastructure on the other. We demonstrate tissue staining and fixation protocols and a workflow that yield an excellent compromise between these multimodal imaging constraints. We adapt CAT for the study of projection neurons between different vocal brain regions in the songbird. We inject fluorescent tracers of different colors into afferent and efferent areas of HVC in zebra finches. Fluorescence of some tracers is lost during tissue preparation but recovered using anti-dye antibodies. Synapses are identified in EM imagery based on their morphology and ultrastructure and classified into projection neuron type based on fluorescence signal. Our adaptation of array tomography, involving the use of fluorescent tracers and heavy-metal rich staining and embedding protocols for high membrane contrast in EM will be useful for research aimed at statistically describing connectivity between different projection neuron types and for elucidating how sensory signals are routed in the brain and transformed into a meaningful motor output.

  16. Shark Attack Project - Marine Attack at Towed Hydrophone Arrays

    National Research Council Canada - National Science Library

    Kalmijn, Adrianus J

    2005-01-01

    The original objective of the SIO Marine Attack project was to identify the electric and magnetic fields causing sharks to inflict serious damage upon the towed hydrophone arrays of US Navy submarines...

  17. Silicon-based tracking system: Mechanical engineering and design

    International Nuclear Information System (INIS)

    Miller, W.O.; Gamble, M.T.; Thompson, T.C.; Woloshun, K.A.; Reid, R.S.; Hanlon, J.A.; Michaud, F.D.; Dransfield, G.D.; Ziock, H.J.; Palounek, A.P.

    1992-01-01

    The Silicon Tracking System (STS) is composed of silicon strip detectors arranged by both in a cylindrical array and an array of flat panels about the interaction region. The cylindrical array is denoted the central region and the flat panel arrays, which are normal to the beam axis, we denoted the forward regions. The overall length of the silicon array is 5.16 m and the maximum diameter is 0.93 m. The Silicon Tracking System Conceptual Design Report, should be consulted for the body of analysis performed to quantify the present design concept. For the STS to achieve its physics goals, the mechanical structures and services must support 17 m 2 of silicon detectors and stabilize their positions to within 5 μm, uniformly cool the detector the system to O degrees C and at the same time potentially remove up to 13 kW of waste heat generated by the detector electronics, provide up to 3400 A of current to supply the 6.5 million electronics channels, and supply of control and data transmission lines for those channels. These objectives must be achieved in a high ionizing radiation environment, using virtually no structural mass and only low-Z materials. The system must be maintainable during its 10 year operating life

  18. Thermally responsive silicon nanowire arrays for native/denatured-protein separation

    International Nuclear Information System (INIS)

    Wang Hongwei; Wang Yanwei; Yuan Lin; Wang Lei; Yang Weikang; Wu Zhaoqiang; Li Dan; Chen Hong

    2013-01-01

    We present our findings of the selective adsorption of native and denatured proteins onto thermally responsive, native-protein resistant poly(N-isopropylacrylamide) (PNIPAAm) decorated silicon nanowire arrays (SiNWAs). The PNIPAAm–SiNWAs surface, which shows very low levels of native-protein adsorption, favors the adsorption of denatured proteins. The amount of denatured-protein adsorption is higher at temperatures above the lower critical solution temperature (LCST) of PNIPAAm. Temperature cycling surrounding the LCST, which ensures against thermal denaturation of native proteins, further increases the amount of denatured-protein adsorption. Moreover, the PNIPAAm–SiNWAs surface is able to selectively adsorb denatured protein even from mixtures of different protein species; meanwhile, the amount of native proteins in solution is kept nearly at its original level. It is believed that these results will not only enrich current understanding of protein interactions with PNIPAAm-modified SiNWAs surfaces, but may also stimulate applications of PNIPAAm–SiNWAs surfaces for native/denatured protein separation. (paper)

  19. Scalable gamma-ray camera for wide-area search based on silicon photomultipliers array

    Science.gov (United States)

    Jeong, Manhee; Van, Benjamin; Wells, Byron T.; D'Aries, Lawrence J.; Hammig, Mark D.

    2018-03-01

    Portable coded-aperture imaging systems based on scintillators and semiconductors have found use in a variety of radiological applications. For stand-off detection of weakly emitting materials, large volume detectors can facilitate the rapid localization of emitting materials. We describe a scalable coded-aperture imaging system based on 5.02 × 5.02 cm2 CsI(Tl) scintillator modules, each partitioned into 4 × 4 × 20 mm3 pixels that are optically coupled to 12 × 12 pixel silicon photo-multiplier (SiPM) arrays. The 144 pixels per module are read-out with a resistor-based charge-division circuit that reduces the readout outputs from 144 to four signals per module, from which the interaction position and total deposited energy can be extracted. All 144 CsI(Tl) pixels are readily distinguishable with an average energy resolution, at 662 keV, of 13.7% FWHM, a peak-to-valley ratio of 8.2, and a peak-to-Compton ratio of 2.9. The detector module is composed of a SiPM array coupled with a 2 cm thick scintillator and modified uniformly redundant array mask. For the image reconstruction, cross correlation and maximum likelihood expectation maximization methods are used. The system shows a field of view of 45° and an angular resolution of 4.7° FWHM.

  20. The ASTRI mini-array within the future Cherenkov Telescope Array

    Directory of Open Access Journals (Sweden)

    Vercellone Stefano

    2016-01-01

    Full Text Available The Cherenkov Telescope Array (CTA is a large collaborative effort aimed at the design and operation of an observatory dedicated to very high-energy gamma-ray astrophysics in the energy range from a few tens of GeV to above 100 TeV, which will yield about an order of magnitude improvement in sensitivity with respect to the current major arrays (H.E.S.S., MAGIC, and VERITAS. Within this framework, the Italian National Institute for Astrophysics is leading the ASTRI project, whose main goals are the design and installation on Mt. Etna (Sicily of an end-to-end dual-mirror prototype of the CTA small size telescope (SST and the installation at the CTA Southern site of a dual-mirror SST mini-array composed of nine units with a relative distance of about 300 m. The innovative dual-mirror Schwarzschild-Couder optical solution adopted for the ASTRI Project allows us to substantially reduce the telescope plate-scale and, therefore, to adopt silicon photo-multipliers as light detectors. The ASTRI mini-array is a wider international effort. The mini-array, sensitive in the energy range 1–100 TeV and beyond with an angular resolution of a few arcmin and an energy resolution of about 10–15%, is well suited to study relatively bright sources (a few × 10−12 erg cm−2 s−1 at 10 TeV at very high energy. Prominent sources such as extreme blazars, nearby well-known BL Lac objects, Galactic pulsar wind nebulae, supernovae remnants, micro-quasars, and the Galactic Center can be observed in a previously unexplored energy range. The ASTRI mini-array will extend the current IACTs sensitivity well above a few tens of TeV and, at the same time, will allow us to compare our results on a few selected targets with those of current (HAWC and future high-altitude extensive air-shower detectors.

  1. Measurement and Simulation of the Variation in Proton-Induced Energy Deposition in Large Silicon Diode Arrays

    Science.gov (United States)

    Howe, Christina L.; Weller, Robert A.; Reed, Robert A.; Sierawski, Brian D.; Marshall, Paul W.; Marshall, Cheryl J.; Mendenhall, Marcus H.; Schrimpf, Ronald D.

    2007-01-01

    The proton induced charge deposition in a well characterized silicon P-i-N focal plane array is analyzed with Monte Carlo based simulations. These simulations include all physical processes, together with pile up, to accurately describe the experimental data. Simulation results reveal important high energy events not easily detected through experiment due to low statistics. The effects of each physical mechanism on the device response is shown for a single proton energy as well as a full proton space flux.

  2. Quarterly Report 11 for the Period October 1978 - December 1978 and Proceedings of the 11th Project Integration Meeting

    Energy Technology Data Exchange (ETDEWEB)

    None

    1979-10-01

    This report describes progress made by the Low-Cost Solar Array Project during the period October through December 1978. It includes task reports on silicon material processing, large-area silicon sheet development, encapsulation mate3rials testing and development, Project engineering and operations, and manufacturing techniques, plus the steps taken to integrate these efforts. it also includes a report on and copies of viewgraphs presented at the Project Integration Meeting held December 13-14, 1978.

  3. A Stable Flexible Silicon Nanowire Array as Anode for High-Performance Lithium-ion Batteries

    International Nuclear Information System (INIS)

    Wang, Jiantao; Wang, Hui; Zhang, Bingchang; Wang, Yao; Lu, Shigang; Zhang, Xiaohong

    2015-01-01

    Highlights: • A flexible SiNW array in PDMS structure is designed and fabricated as Li-ion battery anode material. • The aggregation and fracture of SiNWs are alleviated by the flexible PDMS skeleton during the process of charge and discharge. • The loose SiO 2 shells coating on the SiNWscould form the protective layer in charge/discharge. • The as-obtain flexible SiNW array/PDMS composite exhibits a much better cycling stability. - Abstract: A Silicon nanowire (SiNW) array inserted into flexible poly-dimethylsiloxane (SiNW array/PDMS) composite structure as anode with high capacity and long-term cycling stability is synthesized by a cost-effective and scalable method. In this structure, the aggregation and fracture of SiNWs are alleviated by the flexible PDMS skeleton. Act as the main active component, the SiNWs are coated by loose SiO 2 shells. These loose SiO 2 shells not only provide space for the large volume changes of SiNW, but also react with the electrolyte and form the stable protective layer during the processes of the lithiation and delithiation. These two functions could improve the cycling stability and columbic efficiency of the SiNWs. The as-obtain flexible SiNW array/PDMS composite structure exhibits excellent long-term cycling stability with a specific capacity of 887.2 mA·h·g −1 and capacity retention of ∼83.4% over 350 cycles at 0.5 C rate compared with the fifteenth cycle. The design of this new structure provides a potential way for developing other functional composite materials

  4. Preparing magnetic yttrium iron garnet nanodot arrays by ultrathin anodic alumina template on silicon substrate

    Energy Technology Data Exchange (ETDEWEB)

    Zheng, Hui; Han, Mangui, E-mail: han-mangui@yahoo.com; Deng, Longjiang [National Engineering Research Center of Electromagnetic Radiation Control Materials, University of Electronic Science and Technology of China, Chengdu 610054 (China); Zheng, Liang; Zheng, Peng; Qin, Huibin [Institute of Electron Device and Application, Hangzhou Dianzi University, Hangzhou 310008 (China); Wu, Qiong [Magnetism Key Laboratory of Zhejiang Province, China Jiliang University, Hangzhou 310018 (China)

    2015-08-10

    Ultrahigh density periodically ordered magnetic yttrium iron garnet (Y{sub 3}Fe{sub 5}O{sub 12}, YIG) nanodot arrays have been prepared by pulsed laser deposition through an ultrathin alumina mask (UTAM). UTAM having periodically ordered circularly shaped holes with 350 nm in diameter, 450 nm in inter-pore distance, and 700 nm in height has been prepared on silicon substrate. Furthermore, the microstructure and magnetic properties of YIG nanodot arrays have been characterized. Nanodot arrays with a sharp distribution in diameter centered at 340 nm with standard deviation of 10 nm have been fabricated. Moreover, typical hysteresis loops and ferromagnetic resonance spectra in in-plane and out-of-plane revealed that this unique structure greatly influences the magnetics properties of YIG. First, coercivity of YIG nanodot arrays in in-plane was increased about from 15 Oe of YIG films to 500 Oe. Then, the degree of uniformity about nanodot height decided that two or more resonance peaks in out-of-plane were detected in the spectra. The peak-to-peak linewidth values were about 94 Oe and 40 Oe in the parallel and perpendicular directions, respectively, which indicated that the values were larger by the two-magnon scattering. Consequently, this pattering method creates opportunities for studying physics in oxide nanomagnets and may be applied in spin-wave devices.

  5. Flat-plate solar array project. Volume 8: Project analysis and integration

    Science.gov (United States)

    Mcguire, P.; Henry, P.

    1986-01-01

    Project Analysis and Integration (PA&I) performed planning and integration activities to support management of the various Flat-Plate Solar Array (FSA) Project R&D activities. Technical and economic goals were established by PA&I for each R&D task within the project to coordinate the thrust toward the National Photovoltaic Program goals. A sophisticated computer modeling capability was developed to assess technical progress toward meeting the economic goals. These models included a manufacturing facility simulation, a photovoltaic power station simulation and a decision aid model incorporating uncertainty. This family of analysis tools was used to track the progress of the technology and to explore the effects of alternative technical paths. Numerous studies conducted by PA&I signaled the achievement of milestones or were the foundation of major FSA project and national program decisions. The most important PA&I activities during the project history are summarized. The PA&I planning function is discussed and how it relates to project direction and important analytical models developed by PA&I for its analytical and assessment activities are reviewed.

  6. Integrated X-ray and charged particle active pixel CMOS sensor arrays using an epitaxial silicon sensitive region

    International Nuclear Information System (INIS)

    Kleinfelder, Stuart; Bichsel, Hans; Bieser, Fred; Matis, Howard S.; Rai, Gulshan; Retiere, Fabrice; Weiman, Howard; Yamamoto, Eugene

    2002-01-01

    Integrated CMOS Active Pixel Sensor (APS) arrays have been fabricated and tested using X-ray and electron sources. The 128 by 128 pixel arrays, designed in a standard 0.25 micron process, use a ∼10 micron epitaxial silicon layer as a deep detection region. The epitaxial layer has a much greater thickness than the surface features used by standard CMOS APS, leading to stronger signals and potentially better signal-to-noise ratio (SNR). On the other hand, minority carriers confined within the epitaxial region may diffuse to neighboring pixels, blur images and reduce peak signal intensity. But for low-rate, sparse-event images, centroid analysis of this diffusion may be used to increase position resolution. Careful trade-offs involving pixel size and sense-node area verses capacitance must be made to optimize overall performance. The prototype sensor arrays, therefore, include a range of different pixel designs, including different APS circuits and a range of different epitaxial layer contact structures. The fabricated arrays were tested with 1.5 GeV electrons and Fe-55 X-ray sources, yielding a measured noise of 13 electrons RMS and an SNR for single Fe-55 X-rays of greater than 38

  7. Quasi-optical antenna-mixer-array design for terahertz frequencies

    Science.gov (United States)

    Guo, Yong; Potter, Kent A.; Rutledge, David B.

    1992-01-01

    A new quasi-optical antenna-mixer-array design for terahertz frequencies is presented. In the design, antenna and mixer are combined into an entity, based on the technology in which millimeter-wave horn antenna arrays have been fabricated in silicon wafers. It consists of a set of forward- and backward-looking horns made with a set of silicon wafers. The front side is used to receive incoming signal, and the back side is used to feed local oscillator signal. Intermediate frequency is led out from the side of the array. Signal received by the horn array is picked up by antenna probes suspended on thin silicon-oxynitride membranes inside the horns. Mixer diodes will be located on the membranes inside the horns. Modeling of such an antenna-mixer-array design is done on a scaled model at microwave frequencies. The impedance matching, RF and LO isolation, and patterns of the array have been tested and analyzed.

  8. Microneedles array with biodegradable tips for transdermal drug delivery

    Science.gov (United States)

    Iliescu, Ciprian; Chen, Bangtao; Wei, Jiashen; Tay, Francis E. H.

    2008-12-01

    The paper presented an enhancement solution for transdermal drug delivery using microneedles array with biodegradable tips. The microneedles array was fabricated by using deep reactive ion etching (DRIE) and the biodegradable tips were made to be porous by electrochemical etching process. The porous silicon microneedle tips can greatly enhance the transdermal drug delivery in a minimum invasion, painless, and convenient manner, at the same time; they are breakable and biodegradable. Basically, the main problem of the silicon microneedles consists of broken microneedles tips during the insertion. The solution proposed is to fabricate the microneedle tip from a biodegradable material - porous silicon. The silicon microneedles are fabricated using DRIE notching effect of reflected charges on mask. The process overcomes the difficulty in the undercut control of the tips during the classical isotropic silicon etching process. When the silicon tips were formed, the porous tips were then generated using a classical electrochemical anodization process in MeCN/HF/H2O solution. The paper presents the experimental results of in vitro release of calcein and BSA with animal skins using a microneedle array with biodegradable tips. Compared to the transdermal drug delivery without any enhancer, the microneedle array had presented significant enhancement of drug release.

  9. Low cost solar array project silicon materials task. Development of a process for high capacity arc heater production of silicon for solar arrays

    Science.gov (United States)

    Fey, M. G.

    1981-01-01

    The experimental verification system for the production of silicon via the arc heater-sodium reduction of SiCl4 was designed, fabricated, installed, and operated. Each of the attendant subsystems was checked out and operated to insure performance requirements. These subsystems included: the arc heaters/reactor, cooling water system, gas system, power system, Control & Instrumentation system, Na injection system, SiCl4 injection system, effluent disposal system and gas burnoff system. Prior to introducing the reactants (Na and SiCl4) to the arc heater/reactor, a series of gas only-power tests was conducted to establish the operating parameters of the three arc heaters of the system. Following the successful completion of the gas only-power tests and the readiness tests of the sodium and SiCl4 injection systems, a shakedown test of the complete experimental verification system was conducted.

  10. Quantifying the Traction Force of a Single Cell by Aligned Silicon Nanowire Array

    KAUST Repository

    Li, Zhou

    2009-10-14

    The physical behaviors of stationary cells, such as the morphology, motility, adhesion, anchorage, invasion and metastasis, are likely to be important for governing their biological characteristics. A change in the physical properties of mammalian cells could be an indication of disease. In this paper, we present a silicon-nanowire-array based technique for quantifying the mechanical behavior of single cells representing three distinct groups: normal mammalian cells, benign cells (L929), and malignant cells (HeLa). By culturing the cells on top of NW arrays, the maximum traction forces of two different tumor cells (HeLa, L929) have been measured by quantitatively analyzing the bending of the nanowires. The cancer cell exhibits a larger traction force than the normal cell by ∼20% for a HeLa cell and ∼50% for a L929 cell. The traction forces have been measured for the L929 cells and mechanocytes as a function of culture time. The relationship between cells extending area and their traction force has been investigated. Our study is likely important for studying the mechanical properties of single cells and their migration characteristics, possibly providing a new cellular level diagnostic technique. © 2009 American Chemical Society.

  11. Organization of silicon nanocrystals by localized electrochemical etching

    International Nuclear Information System (INIS)

    Ayari-Kanoun, Asma; Drouin, Dominique; Beauvais, Jacques; Lysenko, Vladimir; Nychyporuk, Tetyana; Souifi, Abdelkader

    2009-01-01

    An approach to form a monolayer of organized silicon nanocrystals on a monocrystalline Si wafer is reported. Ordered arrays of nanoholes in a silicon nitride layer were obtained by combining electron beam lithography and plasma etching. Then, a short electrochemical etching current pulse led to formation of a single Si nanocrystal per each nanohole. As a result, high quality silicon nanocrystal arrays were formed with well controlled and reproducible morphologies. In future, this approach can be used to fabricate single electron devices.

  12. Development of a PET detector module incorporating a silicon photodiode array

    International Nuclear Information System (INIS)

    Rosenfeld, A.B.; Takacs, G.J.; Lerch, M.L.F.; Simmonds, P.E.

    2000-01-01

    Full text: We are developing a new Positron Emission Tomography (PET) detection sub-module with depth of interaction capability. The new sub-module is simple and robust to minimise module assembly complications and is completely independent of photomultiplier tubes. The new sub-module has also been designed to maximise its flexibility for easy sub-module coupling so as to form a complete, customised, detection module to be used in PET scanners dedicated to human brain and breast, and small animal studies. Blue enhanced, silicon 8x8 detector arrays are used to read out the scintillation crystals, and form the basis of the new module. The new detectors were designed by the Centre for Medical Radiation Physics (CMRP) at the University of Wollongong in collaboration with the High Energy Physics Department, University of Melbourne and produced by SPO D etector , Ukraine. Complementing the work on the silicon photodetectors, we have also carried out simulations of the propagation of the scintillation light in the crystals, and the effect of crystal dimensions and surface treatment on the distribution of light detected by the photodiode array. The distribution of light over the photodiodes has then been used to test various algorithms for calculating the point of interaction of the gamma ray in the crystal. Simulations of the light propagation show that for a crystal of dimensions 25mm x 25mm x 3mm, it is possible to determine the point of interaction in 2 dimensions with an average accuracy of just over 0.5mm. The resulting photon distribution detected by the array. The surface treatment, while having a large effect on the light output, does not have a great effect on the accuracy. If these dimensions change to 25mm x 25mm x 6mm then the surface conditions have a greater effect on the accuracy. It is possible however, with careful surface treatment, to achieve an accuracy of around 0.6mm, only marginally worse than the case for the 3mm thick crystal. Gamma ray

  13. The status of lightweight photovoltaic space array technology based on amorphous silicon solar cells

    Science.gov (United States)

    Hanak, Joseph J.; Kaschmitter, Jim

    1991-01-01

    Ultralight, flexible photovoltaic (PV) array of amorphous silicon (a-Si) was identified as a potential low cost power source for small satellites. A survey was conducted of the status of the a-Si PV array technology with respect to present and future performance, availability, cost, and risks. For existing, experimental array blankets made of commercial cell material, utilizing metal foil substrates, the Beginning of Life (BOL) performance at Air Mass Zero (AM0) and 35 C includes total power up to 200 W, power per area of 64 W/sq m and power per weight of 258 W/kg. Doubling of power per weight occurs when polyimide substrates are used. Estimated End of Life (EOL) power output after 10 years in a nominal low earth orbit would be 80 pct. of BOL, the degradation being due to largely light induced effects (-10 to -15 pct.) and in part (-5 pct.) to space radiation. Predictions for the year 1995 for flexible PV arrays, made on the basis of published results for rigid a-Si modules, indicate EOL power output per area and per weight of 105 W/sq m and 400 W/kg, respectively, while predictions for the late 1990s based on existing U.S. national PV program goals indicate EOL values of 157 W/sq m and 600 W/kg. Cost estimates by vendors for 200 W ultralight arrays in volume of over 1000 units range from $100/watt to $125/watt. Identified risks include the lack of flexible, space compatible encapsulant, the lack of space qualification effort, recent partial or full acquisitions of US manufacturers of a-Si cells by foreign firms, and the absence of a national commitment for a long range development program toward developing of this important power source for space.

  14. An Antireflective Nanostructure Array Fabricated by Nanosilver Colloidal Lithography on a Silicon Substrate

    Directory of Open Access Journals (Sweden)

    Park Seong-Je

    2010-01-01

    Full Text Available Abstract An alternative method is presented for fabricating an antireflective nanostructure array using nanosilver colloidal lithography. Spin coating was used to produce the multilayered silver nanoparticles, which grew by self-assembly and were transformed into randomly distributed nanosilver islands through the thermodynamic action of dewetting and Oswald ripening. The average size and coverage rate of the islands increased with concentration in the range of 50–90 nm and 40–65%, respectively. The nanosilver islands were critically affected by concentration and spin speed. The effects of these two parameters were investigated, after etching and wet removal of nanosilver residues. The reflection nearly disappeared in the ultraviolet wavelength range and was 17% of the reflection of a bare silicon wafer in the visible range.

  15. Stretchable and foldable silicon-based electronics

    KAUST Repository

    Cavazos Sepulveda, Adrian Cesar

    2017-03-30

    Flexible and stretchable semiconducting substrates provide the foundation for novel electronic applications. Usually, ultra-thin, flexible but often fragile substrates are used in such applications. Here, we describe flexible, stretchable, and foldable 500-μm-thick bulk mono-crystalline silicon (100) “islands” that are interconnected via extremely compliant 30-μm-thick connectors made of silicon. The thick mono-crystalline segments create a stand-alone silicon array that is capable of bending to a radius of 130 μm. The bending radius of the array does not depend on the overall substrate thickness because the ultra-flexible silicon connectors are patterned. We use fracture propagation to release the islands. Because they allow for three-dimensional monolithic stacking of integrated circuits or other electronics without any through-silicon vias, our mono-crystalline islands can be used as a “more-than-Moore” strategy and to develop wearable electronics that are sufficiently robust to be compatible with flip-chip bonding.

  16. Stretchable and foldable silicon-based electronics

    KAUST Repository

    Cavazos Sepulveda, Adrian Cesar; Diaz Cordero, M. S.; Carreno, Armando Arpys Arevalo; Nassar, Joanna M.; Hussain, Muhammad Mustafa

    2017-01-01

    Flexible and stretchable semiconducting substrates provide the foundation for novel electronic applications. Usually, ultra-thin, flexible but often fragile substrates are used in such applications. Here, we describe flexible, stretchable, and foldable 500-μm-thick bulk mono-crystalline silicon (100) “islands” that are interconnected via extremely compliant 30-μm-thick connectors made of silicon. The thick mono-crystalline segments create a stand-alone silicon array that is capable of bending to a radius of 130 μm. The bending radius of the array does not depend on the overall substrate thickness because the ultra-flexible silicon connectors are patterned. We use fracture propagation to release the islands. Because they allow for three-dimensional monolithic stacking of integrated circuits or other electronics without any through-silicon vias, our mono-crystalline islands can be used as a “more-than-Moore” strategy and to develop wearable electronics that are sufficiently robust to be compatible with flip-chip bonding.

  17. Silicon monolithic microchannel-cooled laser diode array

    International Nuclear Information System (INIS)

    Skidmore, J. A.; Freitas, B. L.; Crawford, J.; Satariano, J.; Utterback, E.; DiMercurio, L.; Cutter, K.; Sutton, S.

    2000-01-01

    A monolithic microchannel-cooled laser diode array is demonstrated that allows multiple diode-bar mounting with negligible thermal cross talk. The heat sink comprises two main components: a wet-etched Si layer that is anodically bonded to a machined glass block. The continuous wave (cw) thermal resistance of the 10 bar diode array is 0.032 degree sign C/W, which matches the performance of discrete microchannel-cooled arrays. Up to 1.5 kW/cm 2 is achieved cw at an emission wavelength of ∼808 nm. Collimation of a diode array using a monolithic lens frame produced a 7.5 mrad divergence angle by a single active alignment. This diode array offers high average power/brightness in a simple, rugged, scalable architecture that is suitable for large two-dimensional areas. (c) 2000 American Institute of Physics

  18. Characterization of orthogonal transfer array CCDs for the WIYN one degree imager

    Science.gov (United States)

    Lesser, Michael; Ouellette, David; Boroson, Todd; Harbeck, Daniel; Martin, Pierre; Jacoby, George; Cavin, John; Sawyer, David; Boggs, Kasey; Bredthauer, Richard

    2012-03-01

    The WIYN One Degree Imager (ODI) will provide a one degree field of view for the WIYN 3.5 m telescope located on Kitt Peak near Tucson, Arizona. Its focal plane consists of an 8x8 grid of Orthogonal Transfer Array (OTA) CCD detectors. These detectors are the STA2200 OTA CCDs designed and fabricated by Semiconductor Technology Associates, Inc. and backside processed at the University of Arizona Imaging Technology Laboratory. Several lot runs of the STA2200 detectors have been fabricated. We have backside processed devices from these different lots and provide detector performance characterization, including noise, CTE, cosmetics, quantum efficiency, and some orthogonal transfer characteristics. We discuss the performance differences for the devices with different silicon thickness and resistivity. A fully buttable custom detector package has been developed for this project which allows hybridization of the silicon detectors directly onto an aluminum nitride substrate with an embedded pin grid array. This package is mounted on a silicon-aluminum alloy which provides a flat imaging surface of less than 20 microns peakvalley at the -100 C operating temperature. Characterization of the package performance, including low temperature profilometry, is described in this paper.

  19. The LHCb Silicon Tracker Project

    International Nuclear Information System (INIS)

    Agari, M.; Bauer, C.; Baumeister, D.; Blouw, J.; Hofmann, W.; Knoepfle, K.T.; Loechner, S.; Schmelling, M.; Pugatch, V.; Bay, A.; Carron, B.; Frei, R.; Jiminez-Otero, S.; Tran, M.-T.; Voss, H.; Adeva, B.; Esperante, D.; Lois, C.; Vasquez, P.; Bernhard, R.P.; Bernet, R.; Ermoline, Y.; Gassner, J.; Koestner, S.; Lehner, F.; Needham, M.; Siegler, M.; Steinkamp, O.; Straumann, U.; Vollhardt, A.; Volyanskyy, D.

    2006-01-01

    Two silicon strip detectors, the Trigger Tracker(TT) and the Inner Tracker(Italy) will be constructed for the LHCb experiment. Transverse momentum information extracted from the TT will be used in the Level 1 trigger. The IT is part of the main tracking system behind the magnet. Both silicon detectors will be read out using a custom-developed chip by the ASIC lab in Heidelberg. The signal-over-noise behavior and performance of various geometrical designs of the silicon sensors, in conjunction with the Beetle read-out chip, have been extensively studied in test beam experiments. Results from those experiments are presented, and have been used in the final choice of sensor geometry

  20. ISPA (imaging silicon pixel array) experiment

    CERN Multimedia

    Patrice Loïez

    2002-01-01

    The bump-bonded silicon pixel detector, developed at CERN by the EP-MIC group, is shown here in its ceramic carrier. Both represent the ISPA-tube anode. The chip features between 1024 (called OMEGA-1) and 8196 (ALICE-1) active pixels.

  1. Silicon nanowire hybrid photovoltaics

    KAUST Repository

    Garnett, Erik C.

    2010-06-01

    Silicon nanowire Schottky junction solar cells have been fabricated using n-type silicon nanowire arrays and a spin-coated conductive polymer (PEDOT). The polymer Schottky junction cells show superior surface passivation and open-circuit voltages compared to standard diffused junction cells with native oxide surfaces. External quantum efficiencies up to 88% were measured for these silicon nanowire/PEDOT solar cells further demonstrating excellent surface passivation. This process avoids high temperature processes which allows for low-cost substrates to be used. © 2010 IEEE.

  2. Silicon nanowire hybrid photovoltaics

    KAUST Repository

    Garnett, Erik C.; Peters, Craig; Brongersma, Mark; Cui, Yi; McGehee, Mike

    2010-01-01

    Silicon nanowire Schottky junction solar cells have been fabricated using n-type silicon nanowire arrays and a spin-coated conductive polymer (PEDOT). The polymer Schottky junction cells show superior surface passivation and open-circuit voltages compared to standard diffused junction cells with native oxide surfaces. External quantum efficiencies up to 88% were measured for these silicon nanowire/PEDOT solar cells further demonstrating excellent surface passivation. This process avoids high temperature processes which allows for low-cost substrates to be used. © 2010 IEEE.

  3. Scanning tunnelling microscope fabrication of phosphorus array in silicon for a nuclear spin quantum computer

    International Nuclear Information System (INIS)

    O'Brien, J.L.; Schofield, S.R.; Simmons, M.Y.; Clark, R.G.; Dzurak, A.S.; Prawer, S.; Adrienko, I.; Cimino, A.

    2000-01-01

    Full text: In the vigorous worldwide effort to experimentally build a quantum computer, recent intense interest has focussed on solid state approaches for their promise of scalability. Particular attention has been given to silicon-based proposals that can readily be integrated into conventional computing technology. For example the Kane design uses the well isolated nuclear spin of phosphorous donor nuclei (I=1/2) as the qubits embedded in isotopically pure 28 Si (I=0). We demonstrate the ability to fabricate a precise array of P atoms on a clean Si surface with atomic-scale resolution compatible with the fabrication of the Kane quantum computer

  4. Performance studies of X3 silicon detectors for the future ELISSA array at ELI-NP

    Science.gov (United States)

    Chesnevskaya, S.; Balabanski, D. L.; Choudhury, D.; Constantin, P.; Filipescu, D. M.; Ghita, D. G.; Guardo, G. L.; Lattuada, D.; Matei, C.; Rotaru, A.; State, A.

    2018-05-01

    ELISSA is an array of silicon strip detectors under construction at the ELI-NP facility for measurements of photodissociation reactions using high-brilliance, quasi monoenergetic gamma beams. The detection system consists of 35 single-sided position-sensitive X3 detectors arranged in a cylindrical configuration and eight QQQ3 detectors as end-caps. A batch of forty X3 detectors have been tested at ELI-NP. The energy and position resolution, ballistic deficit, leakage currents, and depletion voltage were measured and analyzed. Measurements of the energy resolution were carried out using two read-out electronic chains, one based on multichannel preamplifiers and another based on multiplexers.

  5. SWNT array resonant gate MOS transistor.

    Science.gov (United States)

    Arun, A; Campidelli, S; Filoramo, A; Derycke, V; Salet, P; Ionescu, A M; Goffman, M F

    2011-02-04

    We show that thin horizontal arrays of single wall carbon nanotubes (SWNTs) suspended above the channel of silicon MOSFETs can be used as vibrating gate electrodes. This new class of nano-electromechanical system (NEMS) combines the unique mechanical and electronic properties of SWNTs with an integrated silicon-based motion detection. Its electrical response exhibits a clear signature of the mechanical resonance of SWNT arrays (120-150 MHz) showing that these thin horizontal arrays behave as a cohesive, rigid and elastic body membrane with a Young's modulus in the order of 1-10 GPa and ultra-low mass. The resonant frequency can be tuned by the gate voltage and its dependence is well understood within the continuum mechanics framework.

  6. SWNT array resonant gate MOS transistor

    International Nuclear Information System (INIS)

    Arun, A; Salet, P; Ionescu, A M; Campidelli, S; Filoramo, A; Derycke, V; Goffman, M F

    2011-01-01

    We show that thin horizontal arrays of single wall carbon nanotubes (SWNTs) suspended above the channel of silicon MOSFETs can be used as vibrating gate electrodes. This new class of nano-electromechanical system (NEMS) combines the unique mechanical and electronic properties of SWNTs with an integrated silicon-based motion detection. Its electrical response exhibits a clear signature of the mechanical resonance of SWNT arrays (120-150 MHz) showing that these thin horizontal arrays behave as a cohesive, rigid and elastic body membrane with a Young's modulus in the order of 1-10 GPa and ultra-low mass. The resonant frequency can be tuned by the gate voltage and its dependence is well understood within the continuum mechanics framework.

  7. High performance hybrid silicon micropillar solar cell based on light trapping characteristics of Cu nanoparticles

    Directory of Open Access Journals (Sweden)

    Yulong Zhang

    2018-05-01

    Full Text Available High performance silicon combined structure (micropillar with Cu nanoparticles solar cell has been synthesized from N-type silicon substrates based on the micropillar array. The combined structure solar cell exhibited higher short circuit current rather than the silicon miropillar solar cell, which the parameters of micropillar array are the same. Due to the Cu nanoparticles were decorated on the surface of silicon micropillar array, the photovoltaic properties of cells have been improved. In addition, the optimal efficiency of 11.5% was measured for the combined structure solar cell, which is better than the silicon micropillar cell.

  8. High performance hybrid silicon micropillar solar cell based on light trapping characteristics of Cu nanoparticles

    Science.gov (United States)

    Zhang, Yulong; Fan, Zhiqiang; Zhang, Weijia; Ma, Qiang; Jiang, Zhaoyi; Ma, Denghao

    2018-05-01

    High performance silicon combined structure (micropillar with Cu nanoparticles) solar cell has been synthesized from N-type silicon substrates based on the micropillar array. The combined structure solar cell exhibited higher short circuit current rather than the silicon miropillar solar cell, which the parameters of micropillar array are the same. Due to the Cu nanoparticles were decorated on the surface of silicon micropillar array, the photovoltaic properties of cells have been improved. In addition, the optimal efficiency of 11.5% was measured for the combined structure solar cell, which is better than the silicon micropillar cell.

  9. Pulse shape discrimination using EJ-299-33 plastic scintillator coupled with a Silicon Photomultiplier array

    International Nuclear Information System (INIS)

    Liao, Can; Yang, Haori

    2015-01-01

    Recent developments in organic plastic scintillators capable of pulse shape discrimination (PSD) have gained much interest. Novel photon detectors, such as Silicon Photomultipliers (SiPMs), offer numerous advantages and can be used as an alternative to conventional photo multiplier tubes (PMTs) in many applications. In this work, we evaluate the PSD performance of the EJ-299-33 plastic scintillator coupled with a SiPM array. 2D PSD plots as well as the Figure of Merit (FOM) parameters are presented to demonstrate the PSD capability of EJ-299-33 using a SiPM as the light sensor. The best FOM of 0.76 was observed with a 1.0 MeVee (MeV-electron-equivalent) energy threshold, despite the high noise level of the SiPM array. A high-speed digital oscilloscope was used to acquire data, which was then processed offline in MATLAB. A performance comparison between two different PSD algorithms was carried out. The dependence of PSD quality on the sampling rate was also evaluated, stimulated by the interest to implement this setup for handheld applications where power consumption is crucial

  10. Nanostructured silicon for thermoelectric

    Science.gov (United States)

    Stranz, A.; Kähler, J.; Waag, A.; Peiner, E.

    2011-06-01

    Thermoelectric modules convert thermal energy into electrical energy and vice versa. At present bismuth telluride is the most widely commercial used material for thermoelectric energy conversion. There are many applications where bismuth telluride modules are installed, mainly for refrigeration. However, bismuth telluride as material for energy generation in large scale has some disadvantages. Its availability is limited, it is hot stable at higher temperatures (>250°C) and manufacturing cost is relatively high. An alternative material for energy conversion in the future could be silicon. The technological processing of silicon is well advanced due to the rapid development of microelectronics in recent years. Silicon is largely available and environmentally friendly. The operating temperature of silicon thermoelectric generators can be much higher than of bismuth telluride. Today silicon is rarely used as a thermoelectric material because of its high thermal conductivity. In order to use silicon as an efficient thermoelectric material, it is necessary to reduce its thermal conductivity, while maintaining high electrical conductivity and high Seebeck coefficient. This can be done by nanostructuring into arrays of pillars. Fabrication of silicon pillars using ICP-cryogenic dry etching (Inductive Coupled Plasma) will be described. Their uniform height of the pillars allows simultaneous connecting of all pillars of an array. The pillars have diameters down to 180 nm and their height was selected between 1 micron and 10 microns. Measurement of electrical resistance of single silicon pillars will be presented which is done in a scanning electron microscope (SEM) equipped with nanomanipulators. Furthermore, measurement of thermal conductivity of single pillars with different diameters using the 3ω method will be shown.

  11. Fabrication of three-dimensional MIS nano-capacitor based on nano-imprinted single crystal silicon nanowire arrays

    KAUST Repository

    Zhai, Yujia

    2012-11-26

    We report fabrication of single crystalline silicon nanowire based-three-dimensional MIS nano-capacitors for potential analog and mixed signal applications. The array of nanowires is patterned by Step and Flash Imprint Lithography (S-FIL). Deep silicon etching (DSE) is used to form the nanowires with high aspect ratio, increase the electrode area and thus significantly enhance the capacitance. High-! dielectric is deposited by highly conformal atomic layer deposition (ALD) Al2O3 over the Si nanowires, and sputtered metal TaN serves as the electrode. Electrical measurements of fabricated capacitors show the expected increase of capacitance with greater nanowire height and decreasing dielectric thickness, consistent with calculations. Leakage current and time-dependent dielectric breakdown (TDDB) are also measured and compared with planar MIS capacitors. In view of greater interest in 3D transistor architectures, such as FinFETs, 3D high density MIS capacitors offer an attractive device technology for analog and mixed signal applications. - See more at: http://www.eurekaselect.com/105099/article#sthash.EzeJxk6j.dpuf

  12. Fabrication of three-dimensional MIS nano-capacitor based on nano-imprinted single crystal silicon nanowire arrays

    KAUST Repository

    Zhai, Yujia; Palard, Marylene; Mathew, Leo; Hussain, Muhammad Mustafa; Willson, Grant Grant; Tutuc, Emanuel; Banerjee, Sanjay Kumar

    2012-01-01

    We report fabrication of single crystalline silicon nanowire based-three-dimensional MIS nano-capacitors for potential analog and mixed signal applications. The array of nanowires is patterned by Step and Flash Imprint Lithography (S-FIL). Deep silicon etching (DSE) is used to form the nanowires with high aspect ratio, increase the electrode area and thus significantly enhance the capacitance. High-! dielectric is deposited by highly conformal atomic layer deposition (ALD) Al2O3 over the Si nanowires, and sputtered metal TaN serves as the electrode. Electrical measurements of fabricated capacitors show the expected increase of capacitance with greater nanowire height and decreasing dielectric thickness, consistent with calculations. Leakage current and time-dependent dielectric breakdown (TDDB) are also measured and compared with planar MIS capacitors. In view of greater interest in 3D transistor architectures, such as FinFETs, 3D high density MIS capacitors offer an attractive device technology for analog and mixed signal applications. - See more at: http://www.eurekaselect.com/105099/article#sthash.EzeJxk6j.dpuf

  13. Improved sensing characteristics of dual-gate transistor sensor using silicon nanowire arrays defined by nanoimprint lithography

    Science.gov (United States)

    Lim, Cheol-Min; Lee, In-Kyu; Lee, Ki Joong; Oh, Young Kyoung; Shin, Yong-Beom; Cho, Won-Ju

    2017-12-01

    This work describes the construction of a sensitive, stable, and label-free sensor based on a dual-gate field-effect transistor (DG FET), in which uniformly distributed and size-controlled silicon nanowire (SiNW) arrays by nanoimprint lithography act as conductor channels. Compared to previous DG FETs with a planar-type silicon channel layer, the constructed SiNW DG FETs exhibited superior electrical properties including a higher capacitive-coupling ratio of 18.0 and a lower off-state leakage current under high-temperature stress. In addition, while the conventional planar single-gate (SG) FET- and planar DG FET-based pH sensors showed the sensitivities of 56.7 mV/pH and 439.3 mV/pH, respectively, the SiNW DG FET-based pH sensors showed not only a higher sensitivity of 984.1 mV/pH, but also a lower drift rate of 0.8% for pH-sensitivity. This demonstrates that the SiNW DG FETs simultaneously achieve high sensitivity and stability, with significant potential for future biosensing applications.

  14. The hyperion particle-γ detector array

    Energy Technology Data Exchange (ETDEWEB)

    Hughes, R.O.; Burke, J.T.; Casperson, R.J.; Ota, S. [Nuclear and Chemical Sciences Division, Lawrence Livermore National Laboratory, Livermore, CA 94550 (United States); Fisher, S.; Parker, J. [Science, Technology and Engineering Division, Lawrence Livermore National Laboratory, Livermore, CA 94550 (United States); Beausang, C.W. [Department of Physics, University of Richmond, 28 Westhampton Way, Richmond, VA 23173 (United States); Dag, M. [Cyclotron Institute, Texas A& M University, College Station, TX 77840 (United States); Humby, P. [Department of Physics, University of Richmond, 28 Westhampton Way, Richmond, VA 23173 (United States); Department of Physics, University of Surrey, Surrey GU27XH (United Kingdom); Koglin, J. [Nuclear and Chemical Sciences Division, Lawrence Livermore National Laboratory, Livermore, CA 94550 (United States); McCleskey, E.; McIntosh, A.B.; Saastamoinen, A. [Cyclotron Institute, Texas A& M University, College Station, TX 77840 (United States); Tamashiro, A.S. [Department of Nuclear Science and Engineering, Oregon State University, Corvallis, OR 97331 (United States); Wilson, E. [Department of Physics, University of Richmond, 28 Westhampton Way, Richmond, VA 23173 (United States); Wu, T.C. [Department of Physics and Astronomy, University of Utah, Salt Lake City UT 84112-0830 (United States)

    2017-06-01

    Hyperion is a new high-efficiency charged-particle γ-ray detector array which consists of a segmented silicon telescope for charged-particle detection and up to fourteen high-purity germanium clover detectors for the detection of coincident γ rays. The array will be used in nuclear physics measurements and Stockpile Stewardship studies and replaces the STARLiTeR array. This article discusses the features of the array and presents data collected with the array in the commissioning experiment.

  15. Performance of ultra-small silicon photomultiplier array with active area of 0.12 mm×0.12 mm

    Energy Technology Data Exchange (ETDEWEB)

    Yue, Wang; Zongde, Chen; Chenhui, Li; Ran, He; Shenyuan, Wang; Baicheng, Li; Ruiheng, Wang; Kun, Liang, E-mail: lk@bnu.edu.cn; Ru, Yang; Dejun, Han

    2015-07-01

    We report the performance of an ultra-small silicon photomultiplier (SiPM) line array with 7 elements of 0.12×0.12 mm{sup 2} in active area, 0.2 mm in pitch and 120 micro cells in one element. The device features an epitaxial bulk quenching resistor concept, demonstrated high geometrical fill factor of 41% and photon detection efficiency (PDE) of 25.4% in the wavelength region between 430 nm and 480 nm while retaining high micro cell density around 10 000 mm{sup −2} and ~3 ns FWHM of dark pulses width; it also demonstrated dark count rate of less than 28.7 kHz, optical crosstalk of the order of 2% to 4%, and excellent photon number discrimination. A 0.15 mm×1.6 mm×1.6 mm lutetium yttrium oxyorthosilicate (LYSO) crystal, corresponding to the width, length and height respectively, was successfully coupled to the 1×7 SiPM array for possible ultra-highly resolved positron emission tomography (PET) applications. This novel type of device has advantages particularly for small active area since the performances, such as PDE and response speed is one of the best among SiPMs with similarly high density of micro cells. It may pave a way for this type of SiPM as a promising pixel position sensitive device in imaging sensor applications. - Highlights: • The ultra-small SiPM line array with active area of 0.12 mm×0.12 mm was presented. • The ultra-small SiPM employs the bulk silicon structure as quenching resistor. • A considerable dynamic range and PDE over 25.4% @ 430 nm to 480 nm were characterized.

  16. Low-temperature growth of well-aligned zinc oxide nanorod arrays on silicon substrate and their photocatalytic application

    Directory of Open Access Journals (Sweden)

    Azam A

    2014-04-01

    Full Text Available Ameer Azam,1 Saeed Salem Babkair21Center of Nanotechnology, King Abdulaziz University, Jeddah, Saudi Arabia; 2Center of Nanotechnology, Department of Physics, Faculty of Science, King Abdulaziz University, Jeddah, Saudi ArabiaAbstract: Well-aligned and single-crystalline zinc oxide (ZnO nanorod arrays were grown on silicon (Si substrate using a wet chemical route for the photodegradation of organic dyes. Structural analysis using X-ray diffraction, high-resolution transmission electron microscopy, and selected area electron diffraction confirmed the formation of ZnO nanorods grown preferentially oriented in the (001 direction and with a single phase nature with a wurtzite structure. Field emission scanning electron microscopy and transmission electron microscopy micrographs showed that the length and diameter of the well-aligned rods were about ~350–400 nm and ~80–90 nm, respectively. Raman scattering spectra of ZnO nanorod arrays revealed the characteristic E2 (high mode that is related to the vibration of oxygen atoms in the wurtzite ZnO. The photodegradation of methylene blue (MB using ZnO nanorod arrays was performed under ultraviolet light irradiation. The results of photodegradation showed that ZnO nanorod arrays were capable of degrading ~80% of MB within 60 minutes of irradiation, whereas ~92% of degradation was achieved in 120 minutes. Complete degradation of MB was observed after 270 minutes of irradiation time. Owing to enhanced photocatalytic degradation efficiency and low-temperature growth method, prepared ZnO nanorod arrays may open up the possibility for the successful utilization of ZnO nanorod arrays as a future photocatalyst for environmental remediation.Keywords: ZnO, nanorods, XRD, photodegradation

  17. Final Technical Report Radiation Hard Tight Pitch GaInP SPAD Arrays for High Energy Physics

    Energy Technology Data Exchange (ETDEWEB)

    Harmon, Eric

    2018-01-26

    The specialized photodetectors used in high energy physics experiments often need to remain extremely sensitive for years despite radiation induced damage caused by the constant bombardment of high energy particles. To solve this problem, LightSpin Technologies, Inc. in collaboration with Prof. Bradley Cox and the University of Virginia is developing radiation-hard GaInP photodetectors which are projected to be extraordinarily radiation hard, theoretically capable of withstanding a 100,000-fold higher radiation dose than silicon. In this Phase I SBIR project, LightSpin investigated the performance and radiation hardness of fifth generation GaInP SPAD arrays. These fifth generation devices used a new planar processing approach that enables very tight pitch arrays to be produced. High performance devices with SPAD pitches of 11, 15, and 25 μm were successfully demonstrated, which greatly increased the dynamic range and maximum count rate of the devices. High maximum count rates are critical when considering radiation hardness, since radiation damage causes a proportional increase in the dark count rate, causing SPAD arrays with low maximum count rates (large SPAD pitches) to fail. These GaInP SPAD array Photomultiplier Chips™ were irradiated with protons, electrons, and neutrons. Initial irradiation results were disappointing, with the post-irradiation devices exhibiting excessively high dark currents. The degradation was traced to surface leakage currents that were largely eliminated through the use of trenches etched around the exterior of the Photomultiplier Chip™ (not between SPAD elements). A second round of irradiations on Photomultiplier Chips™ with trenches proved substantially more successful, with post-irradiation dark currents remaining relatively low, though dark count rates were observed to increase at the highest doses. Preliminary analysis of the post-irradiation devices is promising … many of the irradiated Photomultiplier Chips™ still

  18. SWNT array resonant gate MOS transistor

    Energy Technology Data Exchange (ETDEWEB)

    Arun, A; Salet, P; Ionescu, A M [NanoLab, Ecole Polytechnique Federale de Lausanne, CH-1015, Lausanne (Switzerland); Campidelli, S; Filoramo, A; Derycke, V; Goffman, M F, E-mail: marcelo.goffman@cea.fr [Laboratoire d' Electronique Moleculaire, SPEC (CNRS URA 2454), IRAMIS, CEA, Gif-sur-Yvette (France)

    2011-02-04

    We show that thin horizontal arrays of single wall carbon nanotubes (SWNTs) suspended above the channel of silicon MOSFETs can be used as vibrating gate electrodes. This new class of nano-electromechanical system (NEMS) combines the unique mechanical and electronic properties of SWNTs with an integrated silicon-based motion detection. Its electrical response exhibits a clear signature of the mechanical resonance of SWNT arrays (120-150 MHz) showing that these thin horizontal arrays behave as a cohesive, rigid and elastic body membrane with a Young's modulus in the order of 1-10 GPa and ultra-low mass. The resonant frequency can be tuned by the gate voltage and its dependence is well understood within the continuum mechanics framework.

  19. Large-scale aligned silicon carbonitride nanotube arrays: Synthesis, characterization, and field emission property

    International Nuclear Information System (INIS)

    Liao, L.; Xu, Z.; Liu, K. H.; Wang, W. L.; Liu, S.; Bai, X. D.; Wang, E. G.; Li, J. C.; Liu, C.

    2007-01-01

    Large-scale aligned silicon carbonitride (SiCN) nanotube arrays have been synthesized by microwave-plasma-assisted chemical vapor deposition using SiH 4 , CH 4 , and N 2 as precursors. The three elements of Si, C, and N are chemically bonded with each other and the nanotube composition can be adjusted by varying the SiH 4 concentration, as revealed by electron energy loss spectroscopy and x-ray photoelectron spectroscopy. The evolution of microstructure of the SiCN nanotubes with different Si concentrations was characterized by high-resolution transmission electron microscopy and Raman spectroscopy. The dependence of field emission characteristics of the SiCN nanotubes on the composition has been investigated. With the increasing Si concentration, the SiCN nanotube exhibits more favorable oxidation resistance, which suggests that SiCN nanotube is a promising candidate as stable field emitter

  20. Development of processes for the production of low cost silicon dendritic web for solar cells

    Science.gov (United States)

    Duncan, C. S.; Seidensticker, R. G.; Mchugh, J. P.; Hopkins, R. H.; Skutch, M. E.; Driggers, J. M.; Hill, F. E.

    1980-01-01

    High area output rates and continuous, automated growth are two key technical requirements for the growth of low-cost silicon ribbons for solar cells. By means of computer-aided furnace design, silicon dendritic web output rates as high as 27 sq cm/min have been achieved, a value in excess of that projected to meet a $0.50 per peak watt solar array manufacturing cost. The feasibility of simultaneous web growth while the melt is replenished with pelletized silicon has also been demonstrated. This step is an important precursor to the development of an automated growth system. Solar cells made on the replenished material were just as efficient as devices fabricated on typical webs grown without replenishment. Moreover, web cells made on a less-refined, pelletized polycrystalline silicon synthesized by the Battelle process yielded efficiencies up to 13% (AM1).

  1. Electricity from photovoltaic solar cells. Flat-Plate Solar Array Project of the US Department of Energy's National Photovoltaics Program: 10 years of progress

    Science.gov (United States)

    Christensen, Elmer

    1985-01-01

    The objectives were to develop the flat-plate photovoltaic (PV) array technologies required for large-scale terrestrial use late in the 1980s and in the 1990s; advance crystalline silicon PV technologies; develop the technologies required to convert thin-film PV research results into viable module and array technology; and to stimulate transfer of knowledge of advanced PV materials, solar cells, modules, and arrays to the PV community. Progress reached on attaining these goals, along with future recommendations are discussed.

  2. Proceedings of the Flat-Plate Solar Array Project Research Forum on the Design of Flat-Plate Photovoltaic Arrays for Central Stations

    Science.gov (United States)

    1983-01-01

    The Flat Plate Solar Array Project, focuses on advancing technologies relevant to the design and construction of megawatt level central station systems. Photovoltaic modules and arrays for flat plate central station or other large scale electric power production facilities require the establishment of a technical base that resolves design issues and results in practical and cost effective configurations. Design, qualification and maintenance issues related to central station arrays derived from the engineering and operating experiences of early applications and parallel laboratory reserch activities are investigated. Technical issues are examined from the viewpoint of the utility engineer, architect/engineer and laboratory researcher. Topics on optimum source circuit designs, module insulation design for high system voltages, array safety, structural interface design, measurements, and array operation and maintenance are discussed.

  3. Amorphous silicon carbide ultramicroelectrode arrays for neural stimulation and recording

    Science.gov (United States)

    Deku, Felix; Cohen, Yarden; Joshi-Imre, Alexandra; Kanneganti, Aswini; Gardner, Timothy J.; Cogan, Stuart F.

    2018-02-01

    Objective. Foreign body response to indwelling cortical microelectrodes limits the reliability of neural stimulation and recording, particularly for extended chronic applications in behaving animals. The extent to which this response compromises the chronic stability of neural devices depends on many factors including the materials used in the electrode construction, the size, and geometry of the indwelling structure. Here, we report on the development of microelectrode arrays (MEAs) based on amorphous silicon carbide (a-SiC). Approach. This technology utilizes a-SiC for its chronic stability and employs semiconductor manufacturing processes to create MEAs with small shank dimensions. The a-SiC films were deposited by plasma enhanced chemical vapor deposition and patterned by thin-film photolithographic techniques. To improve stimulation and recording capabilities with small contact areas, we investigated low impedance coatings on the electrode sites. The assembled devices were characterized in phosphate buffered saline for their electrochemical properties. Main results. MEAs utilizing a-SiC as both the primary structural element and encapsulation were fabricated successfully. These a-SiC MEAs had 16 penetrating shanks. Each shank has a cross-sectional area less than 60 µm2 and electrode sites with a geometric surface area varying from 20 to 200 µm2. Electrode coatings of TiN and SIROF reduced 1 kHz electrode impedance to less than 100 kΩ from ~2.8 MΩ for 100 µm2 Au electrode sites and increased the charge injection capacities to values greater than 3 mC cm‑2. Finally, we demonstrated functionality by recording neural activity from basal ganglia nucleus of Zebra Finches and motor cortex of rat. Significance. The a-SiC MEAs provide a significant advancement in the development of microelectrodes that over the years has relied on silicon platforms for device manufacture. These flexible a-SiC MEAs have the potential for decreased tissue damage and reduced

  4. Fabrication of close-packed TES microcalorimeter arrays using superconducting molybdenum/gold transition-edge sensors

    Science.gov (United States)

    Finkbeiner, F. M.; Brekosky, R. P.; Chervenak, J. A.; Figueroa-Feliciano, E.; Li, M. J.; Lindeman, M. A.; Stahle, C. K.; Stahle, C. M.; Tralshawala, N.

    2002-02-01

    We present an overview of our efforts in fabricating Transition-Edge Sensor (TES) microcalorimeter arrays for use in astronomical x-ray spectroscopy. Two distinct types of array schemes are currently pursued: 5×5 single pixel TES array where each pixel is a TES microcalorimeter, and Position-Sensing TES (PoST) array. In the latter, a row of 7 or 15 thermally-linked absorber pixels is read out by two TES at its ends. Both schemes employ superconducting Mo/Au bilayers as the TES. The TES are placed on silicon nitride membranes for thermal isolation from the structural frame. The silicon nitride membranes are prepared by a Deep Reactive Ion Etch (DRIE) process into a silicon wafer. In order to achieve the concept of closely packed arrays without decreasing its structural and functional integrity, we have already developed the technology to fabricate arrays of cantilevered pixel-sized absorbers and slit membranes in silicon nitride films. Furthermore, we have started to investigate ultra-low resistance through-wafer micro-vias to bring the electrical contact out to the back of a wafer. .

  5. Performance of a monolithic LaBr{sub 3}:Ce crystal coupled to an array of silicon photomultipliers

    Energy Technology Data Exchange (ETDEWEB)

    Ulyanov, Alexei, E-mail: alexey.uliyanov@ucd.ie [School of Physics, University College Dublin, Belfield, Dublin 4 (Ireland); Morris, Oran [School of Physics, University College Dublin, Belfield, Dublin 4 (Ireland); Department of Computer Science & Applied Physics, Galway-Mayo Institute of Technology, Galway (Ireland); Hanlon, Lorraine; McBreen, Sheila; Foley, Suzanne; Roberts, Oliver J.; Tobin, Isaac; Murphy, David; Wade, Colin [School of Physics, University College Dublin, Belfield, Dublin 4 (Ireland); Nelms, Nick; Shortt, Brian [European Space Agency, ESTEC, 2200 AG Noordwijk (Netherlands); Slavicek, Tomas; Granja, Carlos; Solar, Michael [Institute of Experimental and Applied Physics, Czech Technical University in Prague, 12800 Prague 2 (Czech Republic)

    2016-02-21

    A gamma-ray detector composed of a single 28×28×20 mm{sup 3} LaBr{sub 3}:Ce crystal coupled to a custom built 4×4 array of silicon photomultipliers was tested over an energy range of 30 keV to 9.3 MeV. The silicon photomultipliers were initially calibrated using 20 ns light pulses generated by a light emitting diode. The photodetector responses measured as a function of the number of incident photons were found to be non-linear and consistent with model predictions. Using corrections for the non-linearity of the silicon photomultipliers, the detector showed a linear response to gamma-rays with energies from 100 keV to the maximum available energy of 9.3 MeV. The energy resolution was found to be 4% FWHM at 662 keV. Despite the large thickness of the scintillator (20 mm) and a 5 mm thick optical window, the detector was capable of measuring the positions of the gamma-ray interaction points. The position resolution was measured at 356 keV and was found to be 8 mm FWHM in the detector plane and 11 mm FWHM for the depth of interaction. The detector can be used as a building block of a larger calorimeter system that is capable of measuring gamma-ray energies up to tens of MeV.

  6. Photoelectric Properties of Silicon Nanocrystals/P3HT Bulk-Heterojunction Ordered in Titanium Dioxide Nanotube Arrays

    Directory of Open Access Journals (Sweden)

    Švrček Vladimir

    2009-01-01

    Full Text Available Abstract A silicon nanocrystals (Si-ncs conjugated-polymer-based bulk-heterojunction represents a promising approach for low-cost hybrid solar cells. In this contribution, the bulk-heterojunction is based on Si-ncs prepared by electrochemical etching and poly(3-hexylthiophene (P3HT polymer. Photoelectric properties in parallel and vertical device-like configuration were investigated. Electronic interaction between the polymer and surfactant-free Si-ncs is achieved. Temperature-dependent photoluminescence and transport properties were studied and the ratio between the photo- and dark-conductivity of 1.7 was achieved at ambient conditions. Furthermore the porous titanium dioxide (TiO2 nanotubes’ template was used for vertical order of photosensitive Si-ncs/P3HT-based blend. The anodization of titanium foil in ethylene glycol-based electrolyte containing fluoride ions and subsequent thermal annealing were used to prepare anatase TiO2nanotube arrays. The arrays with nanotube inner diameter of 90 and 50 nm were used for vertical ordering of the Si-ncs/P3HT bulk-heterojunction.

  7. Low cost solar array project. Cell and module formation research area. Process research of non-CZ silicon material

    Science.gov (United States)

    1983-01-01

    Liquid diffusion masks and liquid dopants to replace the more expensive CVD SiO2 mask and gaseous diffusion processes were investigated. Silicon pellets were prepared in the silicon shot tower; and solar cells were fabricated using web grown where the pellets were used as a replenishment material. Verification runs were made using the boron dopant and liquid diffusion mask materials. The average of cells produced in these runs was 13%. The relationship of sheet resistivity, temperature, gas flows, and gas composition for the diffusion of the P-8 liquid phosphorus solution was investigated. Solar cells processed from web grown from Si shot material were evaluated, and results qualified the use of the material produced in the shot tower for web furnace feed stock.

  8. The International Pulsar Timing Array project: using pulsars as a gravitational wave detector

    NARCIS (Netherlands)

    Hobbs, G.; Archibald, A.; Arzoumanian, Z.; Backer, D.; Bailes, M.; Bhat, N.D.R.; Burgay, M.; Burke-Spolaor, S.; Champion, D.; Cognard, I.; Coles, W.; Cordes, J.; Demorest, P.; Desvignes, G.; Ferdman, R.D.; Finn, L.; Freire, P.; Gonzalez, M.; Hessels, J.; Hotan, A.; Janssen, G.; Jenet, F.; Jessner, A.; Jordan, C.; Kaspi, V.; Kramer, M.; Kondratiev, V.; Lazio, J.; Lazaridis, K.; Lee, K.J.; Levin, Y.; Lommen, A.; Lorimer, D.; Lynch, R.; Lyne, A.; Manchester, R.; McLaughlin, M.; Nice, D.; Oslowski, S.; Pilia, M.; Possenti, A.; Purver, M.; Ransom, S.; Reynolds, J.; Sanidas, S.; Sarkissian, J.; Sesana, A.; Shannon, R.; Siemens, X.; Stairs, I.; Stappers, B.; Stinebring, D.; Theureau, G.; van Haasteren, R.; van Straten, W.; Verbiest, J.P.W.; Yardley, D.R.B.; You, X.P.

    2010-01-01

    The International Pulsar Timing Array project combines observations of pulsars from both northern and southern hemisphere observatories with the main aim of detecting ultra-low frequency (similar to 10(-9)-10(-8) Hz) gravitational waves. Here we introduce the project, review the methods used to

  9. Design and fabrication process of silicon micro-calorimeters on simple SOI technology for X-ray spectral imaging

    International Nuclear Information System (INIS)

    Aliane, A.; Agnese, P.; Pigot, C.; Sauvageot, J.-L.; Moro, F. de; Ribot, H.; Gasse, A.; Szeflinski, V.; Gobil, Y.

    2008-01-01

    Several successful development programs have been conducted on infra-red bolometer arrays at the 'Commissariat a l'Energie Atomique' (CEA-LETI Grenoble) in collaboration with the CEA-SAp (Saclay); taking advantage of this background, we are now developing an X-ray spectro-imaging camera for next generation space astronomy missions, using silicon only technology. We have developed monolithic silicon micro-calorimeters based on implanted thermistors in an improved array that could be used for future space missions. The 8x8 array consists of a grid of 64 suspended pixels fabricated on a silicon on insulator (SOI) wafer. Each pixel of this detector array is made of a tantalum (Ta) absorber, which is bound by means of indium bump hybridization, to a silicon thermistor. The absorber array is bound to the thermistor array in a collective process. The fabrication process of our detector involves a combination of standard technologies and silicon bulk micro-machining techniques, based on deposition, photolithography and plasma etching steps. Finally, we present the results of measurements performed on these four primary building blocks that are required to create a detector array up to 32x32 pixels in size

  10. Project analysis and integration economic analyses summary

    Science.gov (United States)

    Macomber, H. L.

    1986-01-01

    An economic-analysis summary was presented for the manufacture of crystalline-silicon modules involving silicon ingot/sheet, growth, slicing, cell manufacture, and module assembly. Economic analyses provided: useful quantitative aspects for complex decision-making to the Flat-plate Solar Array (FSA) Project; yardsticks for design and performance to industry; and demonstration of how to evaluate and understand the worth of research and development both to JPL and other government agencies and programs. It was concluded that future research and development funds for photovoltaics must be provided by the Federal Government because the solar industry today does not reap enough profits from its present-day sales of photovoltaic equipment.

  11. Optimal and Local Connectivity Between Neuron and Synapse Array in the Quantum Dot/Silicon Brain

    Science.gov (United States)

    Duong, Tuan A.; Assad, Christopher; Thakoor, Anikumar P.

    2010-01-01

    This innovation is used to connect between synapse and neuron arrays using nanowire in quantum dot and metal in CMOS (complementary metal oxide semiconductor) technology to enable the density of a brain-like connection in hardware. The hardware implementation combines three technologies: 1. Quantum dot and nanowire-based compact synaptic cell (50x50 sq nm) with inherently low parasitic capacitance (hence, low dynamic power approx.l0(exp -11) watts/synapse), 2. Neuron and learning circuits implemented in 50-nm CMOS technology, to be integrated with quantum dot and nanowire synapse, and 3. 3D stacking approach to achieve the overall numbers of high density O(10(exp 12)) synapses and O(10(exp 8)) neurons in the overall system. In a 1-sq cm of quantum dot layer sitting on a 50-nm CMOS layer, innovators were able to pack a 10(exp 6)-neuron and 10(exp 10)-synapse array; however, the constraint for the connection scheme is that each neuron will receive a non-identical 10(exp 4)-synapse set, including itself, via its efficacy of the connection. This is not a fully connected system where the 100x100 synapse array only has a 100-input data bus and 100-output data bus. Due to the data bus sharing, it poses a great challenge to have a complete connected system, and its constraint within the quantum dot and silicon wafer layer. For an effective connection scheme, there are three conditions to be met: 1. Local connection. 2. The nanowire should be connected locally, not globally from which it helps to maximize the data flow by sharing the same wire space location. 3. Each synapse can have an alternate summation line if needed (this option is doable based on the simple mask creation). The 10(exp 3)x10(exp 3)-neuron array was partitioned into a 10-block, 10(exp 2)x10(exp 3)-neuron array. This building block can be completely mapped within itself (10,000 synapses to a neuron).

  12. Low cost solar array project cell and module formation research area: Process research of non-CZ silicon material

    Science.gov (United States)

    1981-01-01

    Liquid diffusion masks and liquid applied dopants to replace the CVD Silox masking and gaseous diffusion operations specified for forming junctions in the Westinghouse baseline process sequence for producing solar cells from dendritic web silicon were investigated. The baseline diffusion masking and drive processes were compared with those involving direct liquid applications to the dendritic web silicon strips. Attempts were made to control the number of variables by subjecting dendritic web strips cut from a single web crystal to both types of operations. Data generated reinforced earlier conclusions that efficiency levels at least as high as those achieved with the baseline back junction formation process can be achieved using liquid diffusion masks and liquid dopants. The deliveries of dendritic web sheet material and solar cells specified by the current contract were made as scheduled.

  13. Piezoelectric transducer array microspeaker

    KAUST Repository

    Carreno, Armando Arpys Arevalo

    2016-12-19

    In this paper we present the fabrication and characterization of a piezoelectric micro-speaker. The speaker is an array of micro-machined piezoelectric membranes, fabricated on silicon wafer using advanced micro-machining techniques. Each array contains 2n piezoelectric transducer membranes, where “n” is the bit number. Every element of the array has a circular shape structure. The membrane is made out four layers: 300nm of platinum for the bottom electrode, 250nm or lead zirconate titanate (PZT), a top electrode of 300nm and a structural layer of 50

  14. Characterising large area silicon drift detectors with MOS injectors

    International Nuclear Information System (INIS)

    Bonvicini, V.; Rashevsky, A.; Vacchi, A.

    1999-01-01

    In the framework of the INFN DSI project, the first prototypes of a large-area Silicon Drift Detector (SDD) have been designed and produced on 5'' diameter wafers of Neutron Transmutation Doped (NTD) silicon with a resistivity of 3000 Ω·cm. The detector is a 'butterfly' bi-directional structure with a drift length of 32 mm and the drifting charge is collected by two arrays of anodes having a pitch of 200 μm. The high-voltage divider is integrated on-board and is realised with p + implantations. For test and calibration purposes, the detector has a new type of MOS injector. The paper presents results obtained to injecting charge at the maximum drift distance (32mm) from the anodes by means of the MOS injecting structure, As front-end electronics, the authors have used a 32-channels low-noise bipolar VLSI circuit (OLA, Omni-purpose Low-noise Amplifer) specifically designed for silicon drift detectors. The uniformity of the drift time in different regions of the sensitive area and its dependence on the ambient temperature are studied

  15. Silicon web process development. [for low cost solar cells

    Science.gov (United States)

    Duncan, C. S.; Hopkins, R. H.; Seidensticker, R. G.; Mchugh, J. P.; Hill, F. E.; Heimlich, M. E.; Driggers, J. M.

    1979-01-01

    Silicon dendritic web, a single crystal ribbon shaped during growth by crystallographic forces and surface tension (rather than dies), is a highly promising base material for efficient low cost solar cells. The form of the product smooth, flexible strips 100 to 200 microns thick, conserves expensive silicon and facilitates automation of crystal growth and the subsequent manufacturing of solar cells. These characteristics, coupled with the highest demonstrated ribbon solar cell efficiency-15.5%-make silicon web a leading candidate to achieve, or better, the 1986 Low Cost Solar Array (LSA) Project cost objective of 50 cents per peak watt of photovoltaic output power. The main objective of the Web Program, technology development to significantly increase web output rate, and to show the feasibility for simultaneous melt replenishment and growth, have largely been accomplished. Recently, web output rates of 23.6 sq cm/min, nearly three times the 8 sq cm/min maximum rate of a year ago, were achieved. Webs 4 cm wide or greater were grown on a number of occassions.

  16. Silicon photomultipliers as readout elements for a Compton effect polarimeter: the COMPASS project

    CERN Document Server

    Del Monte, E; Brandonisio, A; Muleri, F; Soffitta, P; Costa, E; di Persio, G; Cosimo, S Di; Massaro, E; Morbidini, A; Morelli, E; Pacciani, L; Fabiani, S; Michilli, D; Giarrusso, S; Catalano, O; Impiombato, D; Mineo, T; Sottile, G; Billotta, S

    2016-01-01

    COMpton Polarimeter with Avalanche Silicon readout (COMPASS) is a research and development project that aims to measure the polarization of X-ray photons through Compton Scattering. The measurement is obtained by using a set of small rods of fast scintillation materials with both low-Z (as active scatterer) and high-Z (as absorber), all read-out with Silicon Photomultipliers. By this method we can operate scattering and absorbing elements in coincidence, in order to reduce the background. In the laboratory we are characterising the SiPMs using different types of scintillators and we are optimising the performances in terms of energy resolution, energy threshold and photon tagging efficiency. We aim to study the design of two types of satellite-borne instruments: a focal plane polarimeter to be coupled with multilayer optics for hard X-rays and a large area and wide field of view polarimeter for transients and Gamma Ray Bursts. In this paper we describe the status of the COMPASS project, we report about the la...

  17. Process research of non-cz silicon material. Low cost solar array project, cell and module formation research area

    Science.gov (United States)

    1982-01-01

    Liquid diffusion masks and liquid applied dopants to replace the CVD Silox masking and gaseous diffusion operations specified for forming junctions in the Westinghouse baseline process sequence for producing solar cells from dendritic web silicon were investigated.

  18. Low cost solar array project: Cell and module formation research area. Process research of non-CZ silicon material

    Science.gov (United States)

    1983-01-01

    Meniscus coates tests, back junction formation using a new boron containing liquid, tests of various SiO2 and boron containing liquids, pelletized silicon for replenishment during web growth, and ion implantation compatibility/feasibility study are discussed.

  19. Signal encoding method for a time-of-flight PET detector using a silicon photomultiplier array

    Science.gov (United States)

    Kwon, Sun Il; Lee, Jae Sung

    2014-10-01

    The silicon photomultiplier (SiPM) is a promising photosensor for magnetic resonance (MR) compatible time-of-flight (TOF) positron emission tomography (PET) scanners. The compact size of the SiPM allows direct one-to-one coupling between the scintillation crystal and the photosensor, yielding better timing and energy resolutions than the light sharing methods that have to be used in photomultiplier tube (PMT) PET systems. However, the one-to-one coupling scheme requires a huge volume of readout and processing electronics if no electric signal multiplexing or encoding scheme is properly applied. In this paper, we develop an electric signal encoding scheme for SiPM array based TOF PET detector blocks with the aim of reducing the complexity and volume of the signal readout and processing electronics. In an M×N SiPM array, the output signal of each channel in the SiPM array is divided into two signal lines. These output lines are then tied together in row and column lines. The row and column signals are used to measure the energy and timing information (or vice versa) of each incident gamma-ray event, respectively. Each SiPM channel was directly coupled to a 3×3×20 mm3 LGSO crystal. The reference detector, which was used to measure timing, consisted of an R9800 PMT and a 4×4×10 mm3 LYSO crystal and had a single time resolution of ~200 ps (FWHM). Leading edge discriminators were used to determine coincident events. Dedicated front-end electronics were developed, and the timing and energy resolutions of SiPM arrays with different array sizes (4×4, 8×8, and 12×12) were compared. Breakdown voltage of each SiPM channel was measured using energy spectra within various bias voltages. Coincidence events were measured using a 22Na point source. The average coincidence time resolution of 4×4, 8×8, and 12×12 SiPM arrays were 316 ps, 320 ps, and 335 ps (FWHM), respectively. The energy resolution of 4×4, 8×8, and 12×12 SiPM arrays were 11.8%, 12.5%, and 12.8% (FWHM

  20. INFN Camera demonstrator for the Cherenkov Telescope Array

    CERN Document Server

    Ambrosi, G; Aramo, C.; Bertucci, B.; Bissaldi, E.; Bitossi, M.; Brasolin, S.; Busetto, G.; Carosi, R.; Catalanotti, S.; Ciocci, M.A.; Consoletti, R.; Da Vela, P.; Dazzi, F.; De Angelis, A.; De Lotto, B.; de Palma, F.; Desiante, R.; Di Girolamo, T.; Di Giulio, C.; Doro, M.; D'Urso, D.; Ferraro, G.; Ferrarotto, F.; Gargano, F.; Giglietto, N.; Giordano, F.; Giraudo, G.; Iacovacci, M.; Ionica, M.; Iori, M.; Longo, F.; Mariotti, M.; Mastroianni, S.; Minuti, M.; Morselli, A.; Paoletti, R.; Pauletta, G.; Rando, R.; Fernandez, G. Rodriguez; Rugliancich, A.; Simone, D.; Stella, C.; Tonachini, A.; Vallania, P.; Valore, L.; Vagelli, V.; Verzi, V.; Vigorito, C.

    2015-01-01

    The Cherenkov Telescope Array is a world-wide project for a new generation of ground-based Cherenkov telescopes of the Imaging class with the aim of exploring the highest energy region of the electromagnetic spectrum. With two planned arrays, one for each hemisphere, it will guarantee a good sky coverage in the energy range from a few tens of GeV to hundreds of TeV, with improved angular resolution and a sensitivity in the TeV energy region better by one order of magnitude than the currently operating arrays. In order to cover this wide energy range, three different telescope types are envisaged, with different mirror sizes and focal plane features. In particular, for the highest energies a possible design is a dual-mirror Schwarzschild-Couder optical scheme, with a compact focal plane. A silicon photomultiplier (SiPM) based camera is being proposed as a solution to match the dimensions of the pixel (angular size of ~ 0.17 degrees). INFN is developing a camera demonstrator made by 9 Photo Sensor Modules (PSMs...

  1. Readout and characterisation of new silicon pixel photodiode array for use in PET

    International Nuclear Information System (INIS)

    Hooper, P.; Ward, G.; Lerch, R.; Rozenfeld, A.

    2002-01-01

    Full text: Positron emission tomography (PET) is a functional imaging tool, which is able to quantify physiological, and biochemical processes in vivo using short-lived cyclotron-produced radiotracers. The main physical principle of PET is the simultaneous measurement of two 511 keV photons which are emitted in opposite directions following the annihilation of a positron in tissue. The accuracy of tracking these photons determines the accuracy of localising the radiotracer in the body, which is referred to as the spatial resolution of the system. Compared with conventional single photon imaging with gamma cameras, PET provides superior spatial resolution and sensitivity. However, compared with anatomical imaging techniques, the spatial resolution remains relatively poor at approximately 4-6 mm full width at half maximum (FWHM), compared with 1 mm FWHM for MRI. The Centre for Medical Radiation Physics at the University of Wollongong is developing a new Positron Emission Tomography (PET) detection sub-module that will significantly improve the spatial resolution of PET. The new sub-module design is simple and robust to minimise module assembly complications and is completely independent of photomultiplier tubes. The new sub-module has also been designed to maximise its flexibility for easy sub-module coupling so as to form a complete, customised, detection module to be used in PET scanners dedicated to human brain and breast, and small animal studies. A new computer controlled gantry allows the system to be used for PET and SPECT applications. Silicon 8x8 detector arrays have been developed by CMRP and will be optically coupled scintillation crystals and readout using the VIKING tM hybrid preamplifier chip to form the basis of the new module Characterisation of the pixel photodiode array has been performed to check the uniformity of the response of the array. This characterisation has been done using a pulsed, near infra-red laser diode system and alpha particles

  2. Developing barbed microtip-based electrode arrays for biopotential measurement.

    Science.gov (United States)

    Hsu, Li-Sheng; Tung, Shu-Wei; Kuo, Che-Hsi; Yang, Yao-Joe

    2014-07-10

    This study involved fabricating barbed microtip-based electrode arrays by using silicon wet etching. KOH anisotropic wet etching was employed to form a standard pyramidal microtip array and HF/HNO3 isotropic etching was used to fabricate barbs on these microtips. To improve the electrical conductance between the tip array on the front side of the wafer and the electrical contact on the back side, a through-silicon via was created during the wet etching process. The experimental results show that the forces required to detach the barbed microtip arrays from human skin, a polydimethylsiloxane (PDMS) polymer, and a polyvinylchloride (PVC) film were larger compared with those required to detach microtip arrays that lacked barbs. The impedances of the skin-electrode interface were measured and the performance levels of the proposed dry electrode were characterized. Electrode prototypes that employed the proposed tip arrays were implemented. Electroencephalogram (EEG) and electrocardiography (ECG) recordings using these electrode prototypes were also demonstrated.

  3. Developing Barbed Microtip-Based Electrode Arrays for Biopotential Measurement

    Directory of Open Access Journals (Sweden)

    Li-Sheng Hsu

    2014-07-01

    Full Text Available This study involved fabricating barbed microtip-based electrode arrays by using silicon wet etching. KOH anisotropic wet etching was employed to form a standard pyramidal microtip array and HF/HNO3 isotropic etching was used to fabricate barbs on these microtips. To improve the electrical conductance between the tip array on the front side of the wafer and the electrical contact on the back side, a through-silicon via was created during the wet etching process. The experimental results show that the forces required to detach the barbed microtip arrays from human skin, a polydimethylsiloxane (PDMS polymer, and a polyvinylchloride (PVC film were larger compared with those required to detach microtip arrays that lacked barbs. The impedances of the skin-electrode interface were measured and the performance levels of the proposed dry electrode were characterized. Electrode prototypes that employed the proposed tip arrays were implemented. Electroencephalogram (EEG and electrocardiography (ECG recordings using these electrode prototypes were also demonstrated.

  4. Strategies for doped nanocrystalline silicon integration in silicon heterojunction solar cells

    Czech Academy of Sciences Publication Activity Database

    Seif, J.; Descoeudres, A.; Nogay, G.; Hänni, S.; de Nicolas, S.M.; Holm, N.; Geissbühler, J.; Hessler-Wyser, A.; Duchamp, M.; Dunin-Borkowski, R.E.; Ledinský, Martin; De Wolf, S.; Ballif, C.

    2016-01-01

    Roč. 6, č. 5 (2016), s. 1132-1140 ISSN 2156-3381 R&D Projects: GA MŠk LM2015087 Institutional support: RVO:68378271 Keywords : microcrystalline silicon * nanocrystalline silicon * silicon heterojunctions (SHJs) * solar cells Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 3.712, year: 2016

  5. Plasmonic and silicon spherical nanoparticle antireflective coatings

    Science.gov (United States)

    Baryshnikova, K. V.; Petrov, M. I.; Babicheva, V. E.; Belov, P. A.

    2016-03-01

    Over the last decade, plasmonic antireflecting nanostructures have been extensively studied to be utilized in various optical and optoelectronic systems such as lenses, solar cells, photodetectors, and others. The growing interest to all-dielectric photonics as an alternative optical technology along with plasmonics motivates us to compare antireflective properties of plasmonic and all-dielectric nanoparticle coatings based on silver and crystalline silicon respectively. Our simulation results for spherical nanoparticles array on top of amorphous silicon show that both silicon and silver coatings demonstrate strong antireflective properties in the visible spectral range. For the first time, we show that zero reflectance from the structure with silicon coatings originates from the destructive interference of electric- and magnetic-dipole responses of nanoparticle array with the wave reflected from the substrate, and we refer to this reflection suppression as substrate-mediated Kerker effect. We theoretically compare the silicon and silver coating effectiveness for the thin-film photovoltaic applications. Silver nanoparticles can be more efficient, enabling up to 30% increase of the overall absorbance in semiconductor layer. Nevertheless, silicon coatings allow up to 64% absorbance increase in the narrow band spectral range because of the substrate-mediated Kerker effect, and band position can be effectively tuned by varying the nanoparticles sizes.

  6. Development of advanced methods for continuous Czochralski growth. Silicon sheet growth development for the large area silicon sheet task of the low cost silicon solar array project

    Science.gov (United States)

    Wolfson, R. G.; Sibley, C. B.

    1978-01-01

    The three components required to modify the furnace for batch and continuous recharging with granular silicon were designed. The feasibility of extended growth cycles up to 40 hours long was demonstrated by a recharge simulation experiment; a 6 inch diameter crystal was pulled from a 20 kg charge, remelted, and pulled again for a total of four growth cycles, 59-1/8 inch of body length, and approximately 65 kg of calculated mass.

  7. Manipulation of extinction spectra of P3HT/PMMA medium arrays on silicon substrate containing self-assembled gold nanoparticles

    International Nuclear Information System (INIS)

    Wu, Ming-Chung; Chen, Shih-Wen; Li, Jia-Han; Chou, Yi; Lin, Jhih-Fong; Chen, Yang-Fang; Su, Wei-Fang

    2012-01-01

    In this study, we report a simple novel approach to modulate the extinction spectra of P3HT/PMMA by manipulating the medium arrays on a substrate that is coated with self-assembled gold nanoparticles. The 20 nm gold nanoparticles were synthesized and then self-assembled on the APTMS/silicon substrate surface by immersing the substrate into the gold colloid suspension. A high-resolution P3HT/PMMA photoluminescent electron beam resist was used to fabricate various square hole arrays on the substrate containing gold nanoparticles. The P3HT/PMMA medium composition causes the blue shifts in the extinction peaks of up to 40.6 nm by decreasing the period from 500 nm to 200 nm for P3HT/PMMA square hole arrays with a diameter of 100 nm. The magnitude of blue shift is directly proportional to the product of the changes of medium refractive index and the array structure factor. These peak shifts and intensity of extinction spectra for various P3HT/PMMA medium arrays are well described by the finite-difference time-domain (FDTD) simulation results. Since this simple cost-effective technique can tune the extinction spectrum of medium and adding the gold nanoparticles can give more functionalities for sensing applications, such as surface-enhanced Raman scattering (SERS), that provides good opportunities for the design and fabrication of new optoelectronic devices and sensors. Highlights: ► We can tune the extinction spectra of P3HT/PMMA by manipulating the medium arrays. ► These optical behaviors of P3HT/PMMA medium arrays are well described by FDTD simulation results. ► Adding the Au nanoparticles can give more functionalities for sensing applications.

  8. Manipulation of extinction spectra of P3HT/PMMA medium arrays on silicon substrate containing self-assembled gold nanoparticles

    Energy Technology Data Exchange (ETDEWEB)

    Wu, Ming-Chung [Department of Chemical and Materials Engineering, Chang Gung University, Taoyuan 333-02, Taiwan (China); Chen, Shih-Wen; Li, Jia-Han [Department of Engineering Science and Ocean Engineering, National Taiwan University, Taipei 106-17, Taiwan (China); Chou, Yi; Lin, Jhih-Fong [Department of Materials Science and Engineering, National Taiwan University, Taipei 106-17, Taiwan (China); Chen, Yang-Fang [Department of Physics, National Taiwan University, Taipei 106-17, Taiwan (China); Su, Wei-Fang, E-mail: suwf@ntu.edu.tw [Department of Materials Science and Engineering, National Taiwan University, Taipei 106-17, Taiwan (China)

    2012-11-15

    In this study, we report a simple novel approach to modulate the extinction spectra of P3HT/PMMA by manipulating the medium arrays on a substrate that is coated with self-assembled gold nanoparticles. The 20 nm gold nanoparticles were synthesized and then self-assembled on the APTMS/silicon substrate surface by immersing the substrate into the gold colloid suspension. A high-resolution P3HT/PMMA photoluminescent electron beam resist was used to fabricate various square hole arrays on the substrate containing gold nanoparticles. The P3HT/PMMA medium composition causes the blue shifts in the extinction peaks of up to 40.6 nm by decreasing the period from 500 nm to 200 nm for P3HT/PMMA square hole arrays with a diameter of 100 nm. The magnitude of blue shift is directly proportional to the product of the changes of medium refractive index and the array structure factor. These peak shifts and intensity of extinction spectra for various P3HT/PMMA medium arrays are well described by the finite-difference time-domain (FDTD) simulation results. Since this simple cost-effective technique can tune the extinction spectrum of medium and adding the gold nanoparticles can give more functionalities for sensing applications, such as surface-enhanced Raman scattering (SERS), that provides good opportunities for the design and fabrication of new optoelectronic devices and sensors. Highlights: Black-Right-Pointing-Pointer We can tune the extinction spectra of P3HT/PMMA by manipulating the medium arrays. Black-Right-Pointing-Pointer These optical behaviors of P3HT/PMMA medium arrays are well described by FDTD simulation results. Black-Right-Pointing-Pointer Adding the Au nanoparticles can give more functionalities for sensing applications.

  9. The International Pulsar Timing Array project: using pulsars as a gravitational wave detector

    Energy Technology Data Exchange (ETDEWEB)

    Hobbs, G; Burke-Spolaor, S; Champion, D [Australia Telescope National Facility, CSIRO, PO Box 76, Epping, NSW 1710 (Australia); Archibald, A [Department of Physics, McGill University, Montreal, PQ, H3A 2T8 (Canada); Arzoumanian, Z [CRESST/USRA, NASA Goddard Space Flight Center, Code 662, Greenbelt, MD 20771 (United States); Backer, D [Astronomy Department and Radio Astronomy Laboratory, University of California, Berkeley, CA 94720-3411 (United States); Bailes, M; Bhat, N D R [Centre for Astrophysics and Supercomputing, Swinburne University of Technology, PO Box 218, Hawthorn VIC 3122 (Australia); Burgay, M [Universita di Cagliari, Dipartimento di Fisica, SP Monserrato-Sestu km 0.7, 09042 Monserrato (Canada) (Italy); Cognard, I; Desvignes, G; Ferdman, R D [Station de Radioastronomie de Nanay, Observatoire de Paris, 18330 Nancay (France); Coles, W [Electrical and Computer Engineering, University of California at San Diego, La Jolla, CA (United States); Cordes, J [Astronomy Department, Cornell University, Ithaca, NY 14853 (United States); Demorest, P [National Radio Astronomy Observatory (NRAO), Charlottesville, VA 22903 (United States); Finn, L [Center for Gravitational Wave Physics, The Pennsylvania State University, University Park, PA 16802 (United States); Freire, P [Max-Planck-Institut fuer Radioastronomie, Auf Dem Huegel 69, 53121, Bonn (Germany); Gonzalez, M [Department of Physics and Astronomy, University of British Columbia, 6224 Agricultural Road, Vancouver, BC V6T 1Z1 (Canada); Hessels, J [Astronomical Institute Anton Pannekoek, University of Amsterdam, Kruislaan 403, 1098 SJ Amsterdam (Netherlands); Hotan, A, E-mail: george.hobbs@csiro.a [Department of Imaging and Applied Physics, Curtin University, Bentley, WA (Australia)

    2010-04-21

    The International Pulsar Timing Array project combines observations of pulsars from both northern and southern hemisphere observatories with the main aim of detecting ultra-low frequency (approx 10{sup -9}-10{sup -8} Hz) gravitational waves. Here we introduce the project, review the methods used to search for gravitational waves emitted from coalescing supermassive binary black-hole systems in the centres of merging galaxies and discuss the status of the project.

  10. The research on multi-projection correction based on color coding grid array

    Science.gov (United States)

    Yang, Fan; Han, Cheng; Bai, Baoxing; Zhang, Chao; Zhao, Yunxiu

    2017-10-01

    There are many disadvantages such as lower timeliness, greater manual intervention in multi-channel projection system, in order to solve the above problems, this paper proposes a multi-projector correction technology based on color coding grid array. Firstly, a color structured light stripe is generated by using the De Bruijn sequences, then meshing the feature information of the color structured light stripe image. We put the meshing colored grid intersection as the center of the circle, and build a white solid circle as the feature sample set of projected images. It makes the constructed feature sample set not only has the perceptual localization, but also has good noise immunity. Secondly, we establish the subpixel geometric mapping relationship between the projection screen and the individual projectors by using the structure of light encoding and decoding based on the color array, and the geometrical mapping relation is used to solve the homography matrix of each projector. Lastly the brightness inconsistency of the multi-channel projection overlap area is seriously interfered, it leads to the corrected image doesn't fit well with the observer's visual needs, and we obtain the projection display image of visual consistency by using the luminance fusion correction algorithm. The experimental results show that this method not only effectively solved the problem of distortion of multi-projection screen and the issue of luminance interference in overlapping region, but also improved the calibration efficient of multi-channel projective system and reduced the maintenance cost of intelligent multi-projection system.

  11. Fabrication process for CMUT arrays with polysilicon electrodes, nanometre precision cavity gaps and through-silicon vias

    International Nuclear Information System (INIS)

    Due-Hansen, J; Poppe, E; Summanwar, A; Jensen, G U; Breivik, L; Wang, D T; Schjølberg-Henriksen, K; Midtbø, K

    2012-01-01

    Capacitive micromachined ultrasound transducers (CMUTs) can be used to realize miniature ultrasound probes. Through-silicon vias (TSVs) allow for close integration of the CMUT and read-out electronics. A fabrication process enabling the realization of a CMUT array with TSVs is being developed. The integrated process requires the formation of highly doped polysilicon electrodes with low surface roughness. A process for polysilicon film deposition, doping, CMP, RIE and thermal annealing that resulted in a film with sheet resistance of 4.0 Ω/□ and a surface roughness of 1 nm rms has been developed. The surface roughness of the polysilicon film was found to increase with higher phosphorus concentrations. The surface roughness also increased when oxygen was present in the thermal annealing ambient. The RIE process for etching CMUT cavities in the doped polysilicon gave a mean etch depth of 59.2 ± 3.9 nm and a uniformity across the wafer ranging from 1.0 to 4.7%. The two presented processes are key processes that enable the fabrication of CMUT arrays suitable for applications in for instance intravascular cardiology and gastrointestinal imaging. (paper)

  12. ISPA (imaging silicon pixel array) experiment

    CERN Document Server

    Patrice Loïez

    2002-01-01

    Application components of ISPA tubes are shown: the CERN-developed anode chip, special windows for gamma and x-ray detection, scintillating crystal and fibre arrays for imaging and tracking of ionizing particles.

  13. Navigating Earthquake Physics with High-Resolution Array Back-Projection

    Science.gov (United States)

    Meng, Lingsen

    Understanding earthquake source dynamics is a fundamental goal of geophysics. Progress toward this goal has been slow due to the gap between state-of-art earthquake simulations and the limited source imaging techniques based on conventional low-frequency finite fault inversions. Seismic array processing is an alternative source imaging technique that employs the higher frequency content of the earthquakes and provides finer detail of the source process with few prior assumptions. While the back-projection provides key observations of previous large earthquakes, the standard beamforming back-projection suffers from low resolution and severe artifacts. This thesis introduces the MUSIC technique, a high-resolution array processing method that aims to narrow the gap between the seismic observations and earthquake simulations. The MUSIC is a high-resolution method taking advantage of the higher order signal statistics. The method has not been widely used in seismology yet because of the nonstationary and incoherent nature of the seismic signal. We adapt MUSIC to transient seismic signal by incorporating the Multitaper cross-spectrum estimates. We also adopt a "reference window" strategy that mitigates the "swimming artifact," a systematic drift effect in back projection. The improved MUSIC back projections allow the imaging of recent large earthquakes in finer details which give rise to new perspectives on dynamic simulations. In the 2011 Tohoku-Oki earthquake, we observe frequency-dependent rupture behaviors which relate to the material variation along the dip of the subduction interface. In the 2012 off-Sumatra earthquake, we image the complicated ruptures involving orthogonal fault system and an usual branching direction. This result along with our complementary dynamic simulations probes the pressure-insensitive strength of the deep oceanic lithosphere. In another example, back projection is applied to the 2010 M7 Haiti earthquake recorded at regional distance. The

  14. Novel method of separating macroporous arrays from p-type silicon substrate

    International Nuclear Information System (INIS)

    Peng Bobo; Wang Fei; Liu Tao; Yang Zhenya; Wang Lianwei; Fu, Ricky K. Y.; Chu, Paul K.

    2012-01-01

    This paper presents a novel method to fabricate separated macroporous silicon using a single step of photo-assisted electrochemical etching. The method is applied to fabricate silicon microchannel plates in 100 mm p-type silicon wafers, which can be used as electron multipliers and three-dimensional Li-ion microbatteries. Increasing the backside illumination intensity and decreasing the bias simultaneously can generate additional holes during the electrochemical etching which will create lateral etching at the pore tips. In this way the silicon microchannel can be separated from the substrate when the desired depth is reached, then it can be cut into the desired shape by using a laser cutting machine. Also, the mechanism of lateral etching is proposed. (semiconductor materials)

  15. The Low-Frequency Array (LOFAR) and EoR Key-Science Project

    NARCIS (Netherlands)

    Brentjens, Michiel; Koopmans, L. V. E.; de Bruyn, A. G.; Zaroubi, S.

    The Low-Frequency ARray (LOFAR) is a novel radio-telescope facility with its core and operation center in the Netherlands. LOFAR is one of several current pathfinders toward SKA. One of LOFAR's key science projects is the detection and characterization of the redshifted 21-cm emission from neutral

  16. Optical design of ultrashort throw liquid crystal on silicon projection system

    Science.gov (United States)

    Huang, Jiun-Woei

    2017-05-01

    An ultrashort throw liquid crystal on silicon (LCoS) projector for home cinema, virtual reality, and automobile heads-up display has been designed and fabricated. To achieve the best performance and highest-quality image, this study aimed to design wide-angle projection optics and optimize the illumination for LCoS. Based on the telecentric lens projection system and optimized Koehler illumination, the optical parameters were calculated. The projector's optical system consisted of a conic aspheric mirror and image optics using either symmetric double Gauss or a large-angle eyepiece to achieve a full projection angle larger than 155 deg. By applying Koehler illumination, image resolution was enhanced and the modulation transfer function of the image in high spatial frequency was increased to form a high-quality illuminated image. The partial coherence analysis verified that the design was capable of 2.5 lps/mm within a 2 m×1.5 m projected image. The throw ratio was less than 0.25 in HD format.

  17. Launching of multi-project wafer runs in ePIXfab with micron-scale silicon rib waveguide technology

    Science.gov (United States)

    Aalto, Timo; Cherchi, Matteo; Harjanne, Mikko; Ylinen, Sami; Kapulainen, Markku; Vehmas, Tapani

    2014-03-01

    Silicon photonics is a rapidly growing R&D field where universities, institutes and companies are all involved and the business expectations for the next few years are high. One of the key enabling elements that led to the present success of silicon photonics is ePIXfab. It is a consortium of institutes that has together offered multi-project wafer (MPW) runs, packaging services, training, and feasibility studies. These services have significantly lowered the barrier of various research groups and companies to start developing silicon photonics. Until now the MPW services have been offered by the ePIXfab partners IMEC, CEA-Leti and IHP, which all use CMOS-type silicon photonics technology with a typical silicon-on-insulator (SOI) waveguide thickness of 220 nm. In November 2013 this MPW offering was expanded by the ePIXfab partner VTT that opened the access to its 3 μm SOI waveguide platform via ePIXfab MPW runs. This technology platform is complementary to the mainstream silicon photonics technology (220 nm) and it offers such benefits as very low losses, small polarization dependency, ultrabroadband operation and low starting costs

  18. Minimizing Isolate Catalyst Motion in Metal-Assisted Chemical Etching for Deep Trenching of Silicon Nanohole Array.

    Science.gov (United States)

    Kong, Lingyu; Zhao, Yunshan; Dasgupta, Binayak; Ren, Yi; Hippalgaonkar, Kedar; Li, Xiuling; Chim, Wai Kin; Chiam, Sing Yang

    2017-06-21

    The instability of isolate catalysts during metal-assisted chemical etching is a major hindrance to achieve high aspect ratio structures in the vertical and directional etching of silicon (Si). In this work, we discussed and showed how isolate catalyst motion can be influenced and controlled by the semiconductor doping type and the oxidant concentration ratio. We propose that the triggering event in deviating isolate catalyst motion is brought about by unequal etch rates across the isolate catalyst. This triggering event is indirectly affected by the oxidant concentration ratio through the etching rates. While the triggering events are stochastic, the doping concentration of silicon offers a good control in minimizing isolate catalyst motion. The doping concentration affects the porosity at the etching front, and this directly affects the van der Waals (vdWs) forces between the metal catalyst and Si during etching. A reduction in the vdWs forces resulted in a lower bending torque that can prevent the straying of the isolate catalyst from its directional etching, in the event of unequal etch rates. The key understandings in isolate catalyst motion derived from this work allowed us to demonstrate the fabrication of large area and uniformly ordered sub-500 nm nanoholes array with an unprecedented high aspect ratio of ∼12.

  19. The performance of a prototype array of water Cherenkov detectors for the LHAASO project

    Energy Technology Data Exchange (ETDEWEB)

    An, Q. [University of Science and Technology of China, Hefei 230026 (China); State Key Laboratory of Particle Detection and Electronics, Beijing 100049 (China); Bai, Y.X.; Bi, X.J.; Cao, Z. [Institute of High Energy Physics, Chinese Academy of Sciences, Beijing 100049 (China); Chang, J.F. [Institute of High Energy Physics, Chinese Academy of Sciences, Beijing 100049 (China); State Key Laboratory of Particle Detection and Electronics, Beijing 100049 (China); Chen, G.; Chen, M.J. [Institute of High Energy Physics, Chinese Academy of Sciences, Beijing 100049 (China); Chen, S.M. [Tsinghua University, Beijing 100084 (China); Chen, S.Z. [Institute of High Energy Physics, Chinese Academy of Sciences, Beijing 100049 (China); Chen, T.L. [University of Tibet, Lhasa 851600 (China); Chen, X. [Institute of High Energy Physics, Chinese Academy of Sciences, Beijing 100049 (China); Chen, Y.T. [University of Yunnan, Kunming 650091 (China); Cui, S.W. [Normal University of Hebei, Shijiazhuang 050016 (China); Dai, B.Z. [University of Yunnan, Kunming 650091 (China); Du, Q. [Tsinghua University, Beijing 100084 (China); Danzengluobu [University of Tibet, Lhasa 851600 (China); Feng, C.F. [University of Shandong, Jinan 250100 (China); Feng, S.H.; Gao, B. [Institute of High Energy Physics, Chinese Academy of Sciences, Beijing 100049 (China); Gao, S.Q. [National Space Science Center, Chinese Academy of Sciences, Beijing 100190 (China); and others

    2013-10-01

    A large high-altitude air-shower observatory (LHAASO) is to be built at Shangri-La, Yunnan Province, China. This observatory is intended to conduct sub-TeV gamma astronomy, and as an important component of the LHAASO project, a water Cherenkov detector array (WCDA) is proposed. To investigate engineering issues and fully understand the water Cherenkov technique for detecting air showers, a prototype array at 1% scale of the LHAASO-WCDA has been built at Yang-Ba-Jing, Tibet, China. This paper introduces the prototype array setup and studies its performance by counting rate of each photomultiplier tube (PMT), trigger rates at different PMT multiplicities, and responses to air showers. Finally, the reconstructed shower directions and angular resolutions of the detected showers for the prototype array are given. -- Highlights: • The technique of the water Cherenkov array is studied. • Engineering issues of the water Cherenkov array are investigated. • The PMTs and electronics of the water Cherenkov array are tested. • Some key parameters of the water Cherenkov array are measured.

  20. The performance of a prototype array of water Cherenkov detectors for the LHAASO project

    International Nuclear Information System (INIS)

    An, Q.; Bai, Y.X.; Bi, X.J.; Cao, Z.; Chang, J.F.; Chen, G.; Chen, M.J.; Chen, S.M.; Chen, S.Z.; Chen, T.L.; Chen, X.; Chen, Y.T.; Cui, S.W.; Dai, B.Z.; Du, Q.; Danzengluobu; Feng, C.F.; Feng, S.H.; Gao, B.; Gao, S.Q.

    2013-01-01

    A large high-altitude air-shower observatory (LHAASO) is to be built at Shangri-La, Yunnan Province, China. This observatory is intended to conduct sub-TeV gamma astronomy, and as an important component of the LHAASO project, a water Cherenkov detector array (WCDA) is proposed. To investigate engineering issues and fully understand the water Cherenkov technique for detecting air showers, a prototype array at 1% scale of the LHAASO-WCDA has been built at Yang-Ba-Jing, Tibet, China. This paper introduces the prototype array setup and studies its performance by counting rate of each photomultiplier tube (PMT), trigger rates at different PMT multiplicities, and responses to air showers. Finally, the reconstructed shower directions and angular resolutions of the detected showers for the prototype array are given. -- Highlights: • The technique of the water Cherenkov array is studied. • Engineering issues of the water Cherenkov array are investigated. • The PMTs and electronics of the water Cherenkov array are tested. • Some key parameters of the water Cherenkov array are measured

  1. Highly featured amorphous silicon nanorod arrays for high-performance lithium-ion batteries

    International Nuclear Information System (INIS)

    Soleimani-Amiri, Samaneh; Safiabadi Tali, Seied Ali; Azimi, Soheil; Sanaee, Zeinab; Mohajerzadeh, Shamsoddin

    2014-01-01

    High aspect-ratio vertical structures of amorphous silicon have been realized using hydrogen-assisted low-density plasma reactive ion etching. Amorphous silicon layers with the thicknesses ranging from 0.5 to 10 μm were deposited using radio frequency plasma enhanced chemical vapor deposition technique. Standard photolithography and nanosphere colloidal lithography were employed to realize ultra-small features of the amorphous silicon. The performance of the patterned amorphous silicon structures as a lithium-ion battery electrode was investigated using galvanostatic charge-discharge tests. The patterned structures showed a superior Li-ion battery performance compared to planar amorphous silicon. Such structures are suitable for high current Li-ion battery applications such as electric vehicles

  2. Highly featured amorphous silicon nanorod arrays for high-performance lithium-ion batteries

    Energy Technology Data Exchange (ETDEWEB)

    Soleimani-Amiri, Samaneh; Safiabadi Tali, Seied Ali; Azimi, Soheil; Sanaee, Zeinab; Mohajerzadeh, Shamsoddin, E-mail: mohajer@ut.ac.ir [Thin Film and Nanoelectronics Lab, Nanoelectronics Center of Excellence, School of Electrical and Computer Engineering, University of Tehran, Tehran 143957131 (Iran, Islamic Republic of)

    2014-11-10

    High aspect-ratio vertical structures of amorphous silicon have been realized using hydrogen-assisted low-density plasma reactive ion etching. Amorphous silicon layers with the thicknesses ranging from 0.5 to 10 μm were deposited using radio frequency plasma enhanced chemical vapor deposition technique. Standard photolithography and nanosphere colloidal lithography were employed to realize ultra-small features of the amorphous silicon. The performance of the patterned amorphous silicon structures as a lithium-ion battery electrode was investigated using galvanostatic charge-discharge tests. The patterned structures showed a superior Li-ion battery performance compared to planar amorphous silicon. Such structures are suitable for high current Li-ion battery applications such as electric vehicles.

  3. Array automated assembly task low cost silicon solar array project. Phase 2. Final report

    Energy Technology Data Exchange (ETDEWEB)

    Olson, Clayton

    1980-12-01

    The initial contract was a Phase II Process Development for a process sequence, but with concentration on two particular process steps: laserscribing and spray-on junction formation. The add-on portion of the contract was to further develop these tasks, to incorporate spray-on of AR Coating and aluminum and to study the application of microwave energy to solar cell fabrication. The overall process cost projection is 97.918 cents/Wp. The major contributor to this excess cost is the module encapsulation materials cost. During the span of this contract the study of microwave application to solar cell fabrication produced the ability to apply this technique to any requirement of 600/sup 0/C or less. Above this temperature, non-uniformity caused the processing to be unreliable. The process sequence is described in detail, and a SAMICS cost analysis for each valid process step studied is presented. A temporary catalog for expense items is included, and engineering specifications for the process steps are given. (WHK)

  4. Ultradense, Deep Subwavelength Nanowire Array Photovoltaics As Engineered Optical Thin Films

    KAUST Repository

    Tham, Douglas; Heath, James R.

    2010-01-01

    A photovoltaic device comprised of an array of 20 nm wide, 32 nm pitch array of silicon nanowires is modeled as an optical material. The nanowire array (NWA) has characteristic device features that are deep in the subwavelength regime for light

  5. Protein Functionalized Nanodiamond Arrays

    Directory of Open Access Journals (Sweden)

    Liu YL

    2010-01-01

    Full Text Available Abstract Various nanoscale elements are currently being explored for bio-applications, such as in bio-images, bio-detection, and bio-sensors. Among them, nanodiamonds possess remarkable features such as low bio-cytotoxicity, good optical property in fluorescent and Raman spectra, and good photostability for bio-applications. In this work, we devise techniques to position functionalized nanodiamonds on self-assembled monolayer (SAMs arrays adsorbed on silicon and ITO substrates surface using electron beam lithography techniques. The nanodiamond arrays were functionalized with lysozyme to target a certain biomolecule or protein specifically. The optical properties of the nanodiamond-protein complex arrays were characterized by a high throughput confocal microscope. The synthesized nanodiamond-lysozyme complex arrays were found to still retain their functionality in interacting with E. coli.

  6. A new ion detector array and digital-signal-processor-based interface

    International Nuclear Information System (INIS)

    Langstaff, D.P.; McGinnity, T.M.; Forbes, D.M.; Birkinshaw, K.; Lawton, M.W.

    1994-01-01

    A new one-dimensional ion detector array on a silicon chip has been developed for use in mass spectrometry. It is much smaller and simpler than electro-optical arrays currently in use and in addition has a higher resolution and a zero noise level. The array consists of a one-dimensional array of metal strips (electrodes) with a pitch of 25 μm on the top surface of a silicon chip, each electrode having its own charge pulse sensor, 8-bit counter and control/interface circuitry. The chip is mounted on a ceramic substrate and is preceded by a micro-channel plate electron multiplier. Chips are butted to give a longer array. Test results show a stable operating region. A digital-signal-processor-based interface is described, which controls the mode of operation and reads the accumulated array data at the maximum rate to avoid counter overflow. (author)

  7. A new ion detector array and digital-signal-processor-based interface

    Energy Technology Data Exchange (ETDEWEB)

    Langstaff, D.P.; McGinnity, T.M.; Forbes, D.M.; Birkinshaw, K. (University Coll. of Wales, Aberystwyth (United Kingdom). Dept. of Physics); Lawton, M.W. (University of Wales Aberystwyth (United Kingdom). Dept. of Computer Science)

    1994-04-01

    A new one-dimensional ion detector array on a silicon chip has been developed for use in mass spectrometry. It is much smaller and simpler than electro-optical arrays currently in use and in addition has a higher resolution and a zero noise level. The array consists of a one-dimensional array of metal strips (electrodes) with a pitch of 25 [mu]m on the top surface of a silicon chip, each electrode having its own charge pulse sensor, 8-bit counter and control/interface circuitry. The chip is mounted on a ceramic substrate and is preceded by a micro-channel plate electron multiplier. Chips are butted to give a longer array. Test results show a stable operating region. A digital-signal-processor-based interface is described, which controls the mode of operation and reads the accumulated array data at the maximum rate to avoid counter overflow. (author).

  8. Small signal modulation characteristics of red-emitting (λ = 610 nm) III-nitride nanowire array lasers on (001) silicon

    KAUST Repository

    Jahangir, Shafat; Frost, Thomas; Hazari, Arnab; Yan, Lifan; Stark, Ethan; LaMountain, Trevor; Millunchick, Joanna M.; Ooi, Boon S.; Bhattacharya, Pallab

    2015-01-01

    The small signal modulation characteristics of an InGaN/GaN nanowire array edge- emitting laser on (001) silicon are reported. The emission wavelength is 610 nm. Lattice matched InAlN cladding layers were incorporated in the laser heterostructure for better mode confinement. The suitability of the nanowire lasers for use in plastic fiber communication systems with direct modulation is demonstrated through their modulation bandwidth of f-3dB,max = 3.1 GHz, very low values of chirp (0.8 Å) and α-parameter, and large differential gain (3.1 × 10-17 cm2).

  9. Small signal modulation characteristics of red-emitting (λ = 610 nm) III-nitride nanowire array lasers on (001) silicon

    KAUST Repository

    Jahangir, Shafat

    2015-02-16

    The small signal modulation characteristics of an InGaN/GaN nanowire array edge- emitting laser on (001) silicon are reported. The emission wavelength is 610 nm. Lattice matched InAlN cladding layers were incorporated in the laser heterostructure for better mode confinement. The suitability of the nanowire lasers for use in plastic fiber communication systems with direct modulation is demonstrated through their modulation bandwidth of f-3dB,max = 3.1 GHz, very low values of chirp (0.8 Å) and α-parameter, and large differential gain (3.1 × 10-17 cm2).

  10. Nuclear resonant scattering measurements on (57)Fe by multichannel scaling with a 64-pixel silicon avalanche photodiode linear-array detector.

    Science.gov (United States)

    Kishimoto, S; Mitsui, T; Haruki, R; Yoda, Y; Taniguchi, T; Shimazaki, S; Ikeno, M; Saito, M; Tanaka, M

    2014-11-01

    We developed a silicon avalanche photodiode (Si-APD) linear-array detector for use in nuclear resonant scattering experiments using synchrotron X-rays. The Si-APD linear array consists of 64 pixels (pixel size: 100 × 200 μm(2)) with a pixel pitch of 150 μm and depletion depth of 10 μm. An ultrafast frontend circuit allows the X-ray detector to obtain a high output rate of >10(7) cps per pixel. High-performance integrated circuits achieve multichannel scaling over 1024 continuous time bins with a 1 ns resolution for each pixel without dead time. The multichannel scaling method enabled us to record a time spectrum of the 14.4 keV nuclear radiation at each pixel with a time resolution of 1.4 ns (FWHM). This method was successfully applied to nuclear forward scattering and nuclear small-angle scattering on (57)Fe.

  11. AGS silicon gold collisions measured in the E-810 TPC [Time Projection Chamber

    International Nuclear Information System (INIS)

    Bonner, B.E.; Buchanan, J.A.; Chiou, C.N.; Clement, J.M.; Corcoran, M.D.; Kruk, J.W.; Miettinen, H.E.; Mutchler, G.S.; Nessi, M.; Nessi-Tedaldi, F.; Roberts, J.B.; Chan, C.S.; Kramer, M.A.; Etkin, A.; Foley, K.J.; Hackenburg, R.W.; Longacre, R.S.; Love, W.A.; Morris, T.W.; Platner, E.D.; Saulys, A.C.; Hallman, T.J.; Madansky, L.; Lindenbaum, S.J.

    1990-01-01

    The tracking detector of AGS Experiment 810 is a three-piece Time Projection Chamber (TPC) intended to measure all charged tracks in the forward hemisphere of the nucleon-nucleon center of mass system, i.e. forward of an angle of about 20 degrees in the lab. Each module of the TPC contains twelve rows of short anode wires which give 3-D space points on each track, but no dE/dx information useable for particle identification. The TPC was operated in a beam of silicon ions at the end of June 1989 and this talk reports the results of analysis of the data taken with a thin gold target in that run. We have gathered a similar amount of data from thin copper and silicon targets, the analysis of which is in a less advanced state. The results of our investigation of the neutral strange particle decays appear in a separate contribution by Al Saulys. This paper presents the current state of the analysis of the charged tracks from the silicon gold collisions. 1 ref., 15 figs

  12. Preliminary Demonstration of Power Beaming With Non-Coherent Laser Diode Arrays

    National Research Council Canada - National Science Library

    Kare, Jordin

    1999-01-01

    A preliminary demonstration of free-space electric power transmission has been conducted using non-coherent laser diode arrays as the transmitter and standard silicon photovoltaic cell arrays as the receiver...

  13. Microfabricated Multianalyte Sensor Arrays for Metabolite Monitoring

    National Research Council Canada - National Science Library

    Pishko, Michael V; Mugweru, Amos

    2005-01-01

    .... In this work we have taken advantage of silicon micro-fabrication technologies to develop implantable redundant microsensor arrays with glucose oxidase molecules immobilized in photopolymerized...

  14. Desarrollo de un circuito integrado de múltiples canales para Silicon fotomultiplicador arrays lectura

    CERN Document Server

    Comerma i Montells, Albert

    2013-10-31

    The aim of this thesis is to present a solution for the readout of Silicon Photo-Multipliers (SiPMs) arrays improving currently implemented systems. Using as a starting point previous designs with similar objectives a novel current mode input stage has been designed and tested. To start with the design a valid model has been used to generate realistic output from the SiPMs depending on light input. Design has been performed in first place focusing in general applications for medical imaging Positron Emission Tomography (PET) and then using the same topology for a more constrained design in particle detectors (upgrade of Tracker detector at LHCb experiment). A 16 channel ASIC for PET applications including the novel input stage has demonstrated an excellent timing measurement with good energy resolution measurement and pile-up detection. This document starts with the analysis of the requirements needed to fit such a system. Followed by a detailed description of the input stage and analog processing. Signal is ...

  15. An Improved Manufacturing Approach for Discrete Silicon Microneedle Arrays with Tunable Height-Pitch Ratio

    Directory of Open Access Journals (Sweden)

    Renxin Wang

    2016-10-01

    Full Text Available Silicon microneedle arrays (MNAs have been widely studied due to their potential in various transdermal applications. However, discrete MNAs, as a preferred choice to fabricate flexible penetrating devices that could adapt curved and elastic tissue, are rarely reported. Furthermore, the reported discrete MNAs have disadvantages lying in uniformity and height-pitch ratio. Therefore, an improved technique is developed to manufacture discrete MNA with tunable height-pitch ratio, which involves KOH-dicing-KOH process. The detailed process is sketched and simulated to illustrate the formation of microneedles. Furthermore, the undercutting of convex mask in two KOH etching steps are mathematically analyzed, in order to reveal the relationship between etching depth and mask dimension. Subsequently, fabrication results demonstrate KOH-dicing-KOH process. {321} facet is figured out as the surface of octagonal pyramid microneedle. MNAs with diverse height and pitch are also presented to identify the versatility of this approach. At last, the metallization is realized via successive electroplating.

  16. Enhanced lifetime for thin-dielectric microdischarge-arrays operating in DC

    Science.gov (United States)

    Dussart, Remi; Felix, Valentin; Overzet, Lawrence; Aubry, Olivier; Stolz, Arnaud; Lefaucheux, Philippe; Gremi-Univ Orleans-Cnrs Collaboration; University Of Texas At Dallas Collaboration

    2016-09-01

    Micro-hollow cathode discharge arrays using silicon as the cathode have a very limited lifetime because the silicon bubbles and initiates micro-arcing. To avoid this destructive behavior, the same configuration was kept but, another material was selected for the cathode. Using micro and nanotechnologies ordinarily used in microelectronic and MEMS device fabrication, we made arrays of cathode boundary layer (CBL)-type microreactors consisting of nickel electrodes separated by a 6 µm thick SiO2 layer. Microdischarges were ignited in arrays of 100 µm diameter holes at different pressures (200750 Torr) in different gases. Electrical and optical measurements were made to characterize the arrays. Unlike the microdischarges produced using silicon cathodes, the Ni cathode discharges remain very stable with essentially no micro-arcing. DC currents between 50 and 900 µA flowed through each microreactor with a discharge voltage of typically 200 V. Stable V-I characteristics showing both the normal and abnormal regimes were observed and are consistent with the spread of the plasma over the cathode area. Due to their stability and lifetime, new applications of these DC, CBL-type microreactors can now be envisaged.

  17. Lab-on-chip system combining a microfluidic-ELISA with an array of amorphous silicon photosensors for the detection of celiac disease epitopes

    Directory of Open Access Journals (Sweden)

    Francesca Costantini

    2015-12-01

    Full Text Available This work presents a lab-on-chip system, which combines a glass-polydimethilsiloxane microfluidic network and an array of amorphous silicon photosensors for the diagnosis and follow-up of Celiac disease. The microfluidic chip implements an on-chip enzyme-linked immunosorbent assay (ELISA, relying on a sandwich immunoassay between antibodies against gliadin peptides (GPs and a secondary antibody marked with horseradish peroxidase (Ig-HRP. This enzyme catalyzes a chemiluminescent reaction, whose light intensity is detected by the amorphous silicon photosensors and transduced into an electrical signal that can be processed to recognize the presence of antibodies against GPs in the serum of people affected by Celiac syndrome.The correct operation of the developed lab-on-chip has been demonstrated using rabbit serum in the microfluidic ELISA. In particular, optimizing the dilution factors of both sera and Ig-HRP samples in the flowing solutions, the specific and non-specific antibodies against GPs can be successfully distinguished, showing the suitability of the presented device to effectively screen celiac disease epitopes. Keywords: Lab-on-chip, Celiac disease, Microfluidics, On-chip detection, ELISA, Amorphous silicon photosensors

  18. High-Temperature Performance of Stacked Silicon Nanowires for Thermoelectric Power Generation

    Science.gov (United States)

    Stranz, Andrej; Waag, Andreas; Peiner, Erwin

    2013-07-01

    Deep reactive-ion etching at cryogenic temperatures (cryo-DRIE) has been used to produce arrays of silicon nanowires (NWs) for thermoelectric (TE) power generation devices. Using cryo-DRIE, we were able to fabricate NWs of large aspect ratios (up to 32) using a photoresist mask. Roughening of the NW sidewalls occurred, which has been recognized as beneficial for low thermal conductivity. Generated NWs, which were 7 μm in length and 220 nm to 270 nm in diameter, were robust enough to be stacked with a bulk silicon chip as a common top contact to the NWs. Mechanical support of the NW array, which can be created by filling the free space between the NWs using silicon oxide or polyimide, was not required. The Seebeck voltage, measured across multiple stacks of up to 16 bulk silicon dies, revealed negligible thermal interface resistance. With stacked silicon NWs, we observed Seebeck voltages that were an order of magnitude higher than those observed for bulk silicon. Degradation of the TE performance of silicon NWs was not observed for temperatures up to 470°C and temperature gradients up to 170 K.

  19. Effect of embedded dexamethasone in cochlear implant array on insertion forces in an artificial model of scala tympani.

    Science.gov (United States)

    Nguyen, Yann; Bernardeschi, Daniele; Kazmitcheff, Guillaume; Miroir, Mathieu; Vauchel, Thomas; Ferrary, Evelyne; Sterkers, Olivier

    2015-02-01

    Loading otoprotective drug into cochlear implant might change its mechanical properties, thus compromising atraumatic insertion. This study evaluated the effect of incorporation of dexamethasone (DXM) in the silicone of cochlear implant arrays on insertion forces. Local administration of DXM with embedded array can potentially reduce inflammation and fibrosis after cochlear implantation procedure to improve hearing preservation and reduce long-term impedances. Four models of arrays have been tested: 0.5-mm distal diameter array (n = 5) used as a control, drug-free 0.4-mm distal diameter array (n = 5), 0.4-mm distal diameter array with 1% eluded DXM silicone (n = 5), and 0.4-mm distal diameter array with 10% eluded DXM silicone (n = 5). Via a motorized insertion bench, each array has been inserted into an artificial scala tympani model. The forces were recorded by a 6-axis force sensor. Each array was tested seven times for a total number of 140 insertions. During the first 10-mm insertion, no difference between the four models was observed. From 10- to 24-mm insertion, the 0.5-mm distal diameter array presented higher insertion forces than the drug-free 0.4-mm distal diameter arrays, with or without DXM. Friction forces for drug-free 0.4-mm distal diameter array and 0.4-mm distal diameter DXM eluded arrays were similar on all insertion lengths. Incorporation of DXM in silicone for cochlear implant design does not change electrode array insertion forces. It does not raise the risk of trauma during array insertion, making it suitable for long-term in situ administration to the cochlea.

  20. The performance of a prototype array of water Cherenkov detectors for the LHAASO project

    Science.gov (United States)

    An, Q.; Bai, Y. X.; Bi, X. J.; Cao, Z.; Chang, J. F.; Chen, G.; Chen, M. J.; Chen, S. M.; Chen, S. Z.; Chen, T. L.; Chen, X.; Chen, Y. T.; Cui, S. W.; Dai, B. Z.; Du, Q.; Danzengluobu; Feng, C. F.; Feng, S. H.; Gao, B.; Gao, S. Q.; Ge, M. M.; Gu, M. H.; Hao, X. J.; He, H. H.; Hou, C.; Hu, H. B.; Hu, X. B.; Huang, J.; Huang, W. P.; Jia, H. Y.; Jiang, K.; Liu, J.; Liu, J. L.; Liu, J. S.; Liu, S. B.; Liu, Y.; Liu, Y. N.; Li, Q. J.; Li, C.; Li, F.; Li, H. C.; Li, X. R.; Lu, H.; Lv, H. K.; Mao, Y. J.; Ma, L. L.; Ma, X. H.; Shao, J.; Shao, M.; Sheng, X. D.; Sun, G. X.; Sun, Z. B.; Tang, Z. B.; Wu, C. Y.; Wu, H. R.; Wu, Q.; Xiao, G.; Xu, Y.; Yang, Q. Y.; Yang, R.; Yao, Z. G.; You, X. H.; Yuan, A. F.; Zhang, B. K.; Zhang, H. M.; Zhang, S. R.; Zhang, S. S.; Zhang, X. Y.; Zhang, Y.; Zhang, L.; Zhai, L. M.; Zhao, J.; Zhao, L.; Zhao, Z. G.; Zha, M.; Zhou, B.; Zhu, F. R.; Zhu, K. J.; Zhuang, J.; Zuo, X.

    2013-10-01

    A large high-altitude air-shower observatory (LHAASO) is to be built at Shangri-La, Yunnan Province, China. This observatory is intended to conduct sub-TeV gamma astronomy, and as an important component of the LHAASO project, a water Cherenkov detector array (WCDA) is proposed. To investigate engineering issues and fully understand the water Cherenkov technique for detecting air showers, a prototype array at 1% scale of the LHAASO-WCDA has been built at Yang-Ba-Jing, Tibet, China. This paper introduces the prototype array setup and studies its performance by counting rate of each photomultiplier tube (PMT), trigger rates at different PMT multiplicities, and responses to air showers. Finally, the reconstructed shower directions and angular resolutions of the detected showers for the prototype array are given.

  1. Megavoltage imaging with a large-area, flat-panel, amorphous silicon imager

    International Nuclear Information System (INIS)

    Antonuk, Larry E.; Yorkston, John; Huang Weidong; Sandler, Howard; Siewerdsen, Jeffrey H.; El-Mohri, Youcef

    1996-01-01

    Purpose: The creation of the first large-area, amorphous silicon megavoltage imager is reported. The imager is an engineering prototype built to serve as a stepping stone toward the creation of a future clinical prototype. The engineering prototype is described and various images demonstrating its properties are shown including the first reported patient image acquired with such an amorphous silicon imaging device. Specific limitations in the engineering prototype are reviewed and potential advantages of future, more optimized imagers of this type are presented. Methods and Materials: The imager is based on a two-dimensional, pixelated array containing amorphous silicon field-effect transistors and photodiode sensors which are deposited on a thin glass substrate. The array has a 512 x 560-pixel format and a pixel pitch of 450 μm giving an imaging area of ∼23 x 25 cm 2 . The array is used in conjunction with an overlying metal plate/phosphor screen converter as well as an electronic acquisition system. Images were acquired fluoroscopically using a megavoltage treatment machine. Results: Array and digitized film images of a variety of anthropomorphic phantoms and of a human subject are presented and compared. The information content of the array images generally appears to be at least as great as that of the digitized film images. Conclusion: Despite a variety of severe limitations in the engineering prototype, including many array defects, a relatively slow and noisy acquisition system, and the lack of a means to generate images in a radiographic manner, the prototype nevertheless generated clinically useful information. The general properties of these amorphous silicon arrays, along with the quality of the images provided by the engineering prototype, strongly suggest that such arrays could eventually form the basis of a new imaging technology for radiotherapy localization and verification. The development of a clinically useful prototype offering high

  2. Flat-plate solar array project process development area: Process research of non-CZ silicon material

    Science.gov (United States)

    Campbell, R. B.

    1986-01-01

    Several different techniques to simultaneously diffuse the front and back junctions in dendritic web silicon were investigated. A successful simultaneous diffusion reduces the cost of the solar cell by reducing the number of processing steps, the amount of capital equipment, and the labor cost. The three techniques studied were: (1) simultaneous diffusion at standard temperatures and times using a tube type diffusion furnace or a belt furnace; (2) diffusion using excimer laser drive-in; and (3) simultaneous diffusion at high temperature and short times using a pulse of high intensity light as the heat source. The use of an excimer laser and high temperature short time diffusion experiment were both more successful than the diffusion at standard temperature and times. The three techniques are described in detail and a cost analysis of the more successful techniques is provided.

  3. Monolithic integration of a silicon nanowire field-effect transistors array on a complementary metal-oxide semiconductor chip for biochemical sensor applications.

    Science.gov (United States)

    Livi, Paolo; Kwiat, Moria; Shadmani, Amir; Pevzner, Alexander; Navarra, Giulio; Rothe, Jörg; Stettler, Alexander; Chen, Yihui; Patolsky, Fernando; Hierlemann, Andreas

    2015-10-06

    We present a monolithic complementary metal-oxide semiconductor (CMOS)-based sensor system comprising an array of silicon nanowire field-effect transistors (FETs) and the signal-conditioning circuitry on the same chip. The silicon nanowires were fabricated by chemical vapor deposition methods and then transferred to the CMOS chip, where Ti/Pd/Ti contacts had been patterned via e-beam lithography. The on-chip circuitry measures the current flowing through each nanowire FET upon applying a constant source-drain voltage. The analog signal is digitized on chip and then transmitted to a receiving unit. The system has been successfully fabricated and tested by acquiring I-V curves of the bare nanowire-based FETs. Furthermore, the sensing capabilities of the complete system have been demonstrated by recording current changes upon nanowire exposure to solutions of different pHs, as well as by detecting different concentrations of Troponin T biomarkers (cTnT) through antibody-functionalized nanowire FETs.

  4. Performance study of solar cell arrays based on a Trough Concentrating Photovoltaic/Thermal system

    International Nuclear Information System (INIS)

    Li, Ming; Ji, Xu; Li, Guoliang; Wei, Shengxian; Li, YingFeng; Shi, Feng

    2011-01-01

    Highlights: → The performances of solar cell arrays based on a Trough Concentrating Photovoltaic/Thermal (TCPV/T) system have been studied. → The optimum concentration ratios for the single crystalline silicon cell, the Super cells and the GaAs cells were studied by experiments. → The influences between the solar cell's performance and the series resistances, the working temperature, solar irradiation intensity were explored. - Abstract: The performances of solar cell arrays based on a Trough Concentrating Photovoltaic/Thermal (TCPV/T) system have been studied via both experiment and theoretical calculation. The I-V characteristics of the solar cell arrays and the output performances of the TCPV/T system demonstrated that among the investigated four types of solar cell arrays, the triple junction GaAs cells possessed good performance characteristics and the polysilicon cells exhibited poor performance characteristics under concentrating conditions. The optimum concentration ratios for the single crystalline silicon cell, the Super cells and the GaAs cells were also studied by experiments. The optimum concentration ratios for the single crystalline silicon cells and Super cells were 4.23 and 8.46 respectively, and the triple junction GaAs cells could work well at higher concentration ratio. Besides, some theoretical calculations and experiments were performed to explore the influences of the series resistances and the working temperature. When the series resistances R s changed from 0 Ω to 1 Ω, the maximum power P m of the single crystalline silicon, the polycrystalline silicon, the Super cell and the GaAs cell arrays decreased by 67.78%, 74.93%, 77.30% and 58.07% respectively. When the cell temperature increased by 1 K, the short circuit current of the four types of solar cell arrays decreased by 0.11818 A, 0.05364 A, 0.01387 A and 0.00215 A respectively. The research results demonstrated that the output performance of the solar cell arrays with lower

  5. Bias-assisted KOH etching of macroporous silicon membranes

    International Nuclear Information System (INIS)

    Mathwig, K; Geilhufe, M; Müller, F; Gösele, U

    2011-01-01

    This paper presents an improved technique to fabricate porous membranes from macroporous silicon as a starting material. A crucial step in the fabrication process is the dissolution of silicon from the backside of the porous wafer by aqueous potassium hydroxide to open up the pores. We improved this step by biasing the silicon wafer electrically against the KOH. By monitoring the current–time characteristics a good control of the process is achieved and the yield is improved. Also, the etching can be stopped instantaneously and automatically by short-circuiting Si and KOH. Moreover, the bias-assisted etching allows for the controlled fabrication of silicon dioxide tube arrays when the silicon pore walls are oxidized and inverted pores are released.

  6. Laser-zone Growth in a Ribbon-to-ribbon (RTR) Process Silicon Sheet Growth Development for the Large Area Silicon Sheet Task of the Low Cost Solar Array Project

    Science.gov (United States)

    Baghdadi, A.; Gurtler, R. W.; Legge, R.; Sopori, B.; Rice, M. J.; Ellis, R. J.

    1979-01-01

    A technique for growing limited-length ribbons continually was demonstrated. This Rigid Edge technique can be used to recrystallize about 95% of the polyribbon feedstock. A major advantage of this method is that only a single, constant length silicon ribbon is handled throughout the entire process sequence; this may be accomplished using cassettes similar to those presently in use for processing Czochralski waters. Thus a transition from Cz to ribbon technology can be smoothly affected. The maximum size being considered, 3 inches x 24 inches, is half a square foot, and will generate 6 watts for 12% efficiency at 1 sun. Silicon dioxide has been demonstrated as an effective, practical diffusion barrier for use during the polyribbon formation.

  7. Multi-Array Back-Projections of The 2015 Gorkha Earthquake With Physics-Based Aftershock Calibrations

    Science.gov (United States)

    Meng, L.; Zhang, A.; Yagi, Y.

    2015-12-01

    The 2015 Mw 7.8 Nepal-Gorkha earthquake with casualties of over 9,000 people is the most devastating disaster to strike Nepal since the 1934 Nepal-Bihar earthquake. Its rupture process is well imaged by the teleseismic MUSIC back-projections (BP). Here, we perform independent back-projections of high-frequency recordings (0.5-2 Hz) from the Australian seismic network (AU), the North America network (NA) and the European seismic network (EU), located in complementary orientations. Our results of all three arrays show unilateral linear rupture path to the east of the hypocenter. But the propagating directions and the inferred rupture speeds differ significantly among different arrays. To understand the spatial uncertainties of the BP analysis, we image four moderate-size (M5~6) aftershocks based on the timing correction derived from the alignment of the initial P-wave of the mainshock. We find that the apparent source locations inferred from BP are systematically biased along the source-array orientation, which can be explained by the uncertainty of the 3D velocity structure deviated from the 1D reference model (e.g. IASP91). We introduced a slowness error term in travel time as a first-order calibration that successfully mitigates the source location discrepancies of different arrays. The calibrated BP results of three arrays are mutually consistent and reveal a unilateral rupture propagating eastward at a speed of 2.7 km/s along the down-dip edge of the locked Himalaya thrust zone over ~ 150 km, in agreement with a narrow slip distribution inferred from finite source inversions.

  8. 26+ Year Old Photovoltaic Power Plant: Degradation and Reliability Evaluation of Crystalline Silicon Modules -- South Array

    Science.gov (United States)

    Olakonu, Kolapo

    As the use of photovoltaic (PV) modules in large power plants continues to increase globally, more studies on degradation, reliability, failure modes, and mechanisms of field aged modules are needed to predict module life expectancy based on accelerated lifetime testing of PV modules. In this work, a 26+ year old PV power plant in Phoenix, Arizona has been evaluated for performance, reliability, and durability. The PV power plant, called Solar One, is owned and operated by John F. Long's homeowners association. It is a 200 kW dc, standard test conditions (STC) rated power plant comprised of 4000 PV modules or frameless laminates, in 100 panel groups (rated at 175 kW ac). The power plant is made of two center-tapped bipolar arrays, the north array and the south array. Due to a limited time frame to execute this large project, this work was performed by two masters students (Jonathan Belmont and Kolapo Olakonu) and the test results are presented in two masters theses. This thesis presents the results obtained on the south array and the other thesis presents the results obtained on the north array. Each of these two arrays is made of four sub arrays, the east sub arrays (positive and negative polarities) and the west sub arrays (positive and negative polarities), making up eight sub arrays. The evaluation and analyses of the power plant included in this thesis consists of: visual inspection, electrical performance measurements, and infrared thermography. A possible presence of potential induced degradation (PID) due to potential difference between ground and strings was also investigated. Some installation practices were also studied and found to contribute to the power loss observed in this investigation. The power output measured in 2011 for all eight sub arrays at STC is approximately 76 kWdc and represents a power loss of 62% (from 200 kW to 76 kW) over 26+ years. The 2011 measured power output for the four south sub arrays at STC is 39 kWdc and represents a power

  9. Silicon nitride nanosieve membrane

    NARCIS (Netherlands)

    Tong, D.H.; Jansen, Henricus V.; Gadgil, V.J.; Bostan, C.G.; Berenschot, Johan W.; van Rijn, C.J.M.; Elwenspoek, Michael Curt

    2004-01-01

    An array of very uniform cylindrical nanopores with a pore diameter as small as 25 nm has been fabricated in an ultrathin micromachined silicon nitride membrane using focused ion beam (FIB) etching. The pore size of this nanosieve membrane was further reduced to below 10 nm by coating it with

  10. Historical Evidence of Importance to the Industrialization of Flat-plate Silicon Photovoltaic Systems, Volume 2

    Science.gov (United States)

    Smith, J. L.; Gates, W. R.; Lee, T.

    1978-01-01

    Problems which may arise as the low cost silicon solar array (LSSA) project attempts to industrialize the production technologies are defined. The charge to insure an annual production capability of 500 MW peak for the photovoltaic supply industry by 1986 was critically examined, and focused on one of the motivations behind this goal-concern over the timely development of industrial capacity to supply anticipated demand. Conclusions from the analysis are utilized in a discussion of LSSA's industrialization plans, particularly the plans for pilot, demonstration and commercial scale production plants. Specific recommendations for the implementation of an industrialization task and the disposition of the project quantity goal were derived.

  11. SKS splitting results in central Italy and Dinaric region inside the AlpArray-CASE project

    Science.gov (United States)

    Salimbeni, S.; Prevolnik, S.; Pondrelli, S.; Molinari, I.; Stipcevic, J.; Kissling, E.; Šipka, V.; Herak, M.

    2017-12-01

    In the framework of the AlpArray project (AlpArray Seismic Network, 2015), the complementary "Central Adriatic Seismic Experiment" (CASE; AlpArray Seismic Network, 2016) was established as collaboration between ETH Zürich, University of Zagreb, INGV and Republic Hydrometeorological Service of Republic of Srpska. The CASE project consists of 9 temporary stations, installed in October 2016, located in Bosnia and Herzegovina, Croatia and Italy. Temporary broadband seismic stations, with the permanent stations present in the region shared by the Croatian Seismological Service and INGV, make an almost continuous transect cutting the Central-Southern Appenines, the central Adriatic region, central External Dinarides and finishing at the eastern margin of the Internal Dinarides. The presence of the the Apenninic and Dinarides slabs, verging in opposite directions and plunging along the opposite sides of the Adriatic plate, make this area a peculiar spot to understand the complex dynamic of the region. Various tomographic images (e.g. Bijwaard and Spakman, 2000; Piromallo and Morelli, 2003) shows not continuous slabs under the Appenines and the Dinarides, suggesting the presence of slab-gaps right beneath the region covered by the CASE experiment. Here we present the preliminary results of the SKS splitting analysis performed on the data recorded by the temporary and permanent seismic stations included in the CASE project. The new results, in combination with previous interpretation, will provide clues about how Northern and Southern Apennines are connected at depth, how the slab rollback of the Apennines thrust belt acted and if and how the Apennines are in relation with the Dinaric region. Together with the measurements from previous studies and from the AlpArray project, our new data will support the mapping of the seismic anisotropy deformation pattern from Western Alps to Pannonian region.

  12. Lateral electrical transport, optical properties and photocurrent measurements in two-dimensional arrays of silicon nanocrystals embedded in SiO2

    Directory of Open Access Journals (Sweden)

    Gardelis Spiros

    2011-01-01

    Full Text Available Abstract In this study we investigate the electronic transport, the optical properties, and photocurrent in two-dimensional arrays of silicon nanocrystals (Si NCs embedded in silicon dioxide, grown on quartz and having sizes in the range between less than 2 and 20 nm. Electronic transport is determined by the collective effect of Coulomb blockade gaps in the Si NCs. Absorption spectra show the well-known upshift of the energy bandgap with decreasing NC size. Photocurrent follows the absorption spectra confirming that it is composed of photo-generated carriers within the Si NCs. In films containing Si NCs with sizes less than 2 nm, strong quantum confinement and exciton localization are observed, resulting in light emission and absence of photocurrent. Our results show that Si NCs are useful building blocks of photovoltaic devices for use as better absorbers than bulk Si in the visible and ultraviolet spectral range. However, when strong quantum confinement effects come into play, carrier transport is significantly reduced due to strong exciton localization and Coulomb blockade effects, thus leading to limited photocurrent.

  13. Digital electrostatic acoustic transducer array

    KAUST Repository

    Carreno, Armando Arpys Arevalo

    2016-12-19

    In this paper we present the fabrication and characterization of an array of electrostatic acoustic transducers. The array is micromachined on a silicon wafer using standard micro-machining techniques. Each array contains 2n electrostatic transducer membranes, where “n” is the bit number. Every element of the array has a hexagonal membrane shape structure, which is separated from the substrate by 3µm air gap. The membrane is made out 5µm thick polyimide layer that has a bottom gold electrode on the substrate and a gold top electrode on top of the membrane (250nm). The wafer layout design was diced in nine chips with different array configurations, with variation of the membrane dimensions. The device was tested with 90 V giving and sound output level as high as 35dB, while actuating all the elements at the same time.

  14. Digital electrostatic acoustic transducer array

    KAUST Repository

    Carreno, Armando Arpys Arevalo; Castro, David; Conchouso Gonzalez, David; Kosel, Jü rgen; Foulds, Ian G.

    2016-01-01

    In this paper we present the fabrication and characterization of an array of electrostatic acoustic transducers. The array is micromachined on a silicon wafer using standard micro-machining techniques. Each array contains 2n electrostatic transducer membranes, where “n” is the bit number. Every element of the array has a hexagonal membrane shape structure, which is separated from the substrate by 3µm air gap. The membrane is made out 5µm thick polyimide layer that has a bottom gold electrode on the substrate and a gold top electrode on top of the membrane (250nm). The wafer layout design was diced in nine chips with different array configurations, with variation of the membrane dimensions. The device was tested with 90 V giving and sound output level as high as 35dB, while actuating all the elements at the same time.

  15. A novel method for the fabrication of a high-density carbon nanotube microelectrode array

    Directory of Open Access Journals (Sweden)

    Adam Khalifa

    2015-09-01

    Full Text Available We present a novel method for fabricating a high-density carbon nanotube microelectrode array (MEA chip. Vertically aligned carbon nanotubes (VACNTs were synthesized by microwave plasma-enhanced chemical vapor deposition and thermal chemical vapor deposition. The device was characterized using electrochemical experiments such as cyclic voltammetry, impedance spectroscopy and potential transient measurements. Through-silicon vias (TSVs were fabricated and partially filled with polycrystalline silicon to allow electrical connection from the high-density electrodes to a stimulator microchip. In response to the demand for higher resolution implants, we have developed a unique process to obtain a high-density electrode array by making the microelectrodes smaller in size and designing new ways of routing the electrodes to current sources. Keywords: Microelectrode array, Neural implant, Carbon nanotubes, Through-silicon via interconnects, Microfabrication

  16. Study on single-channel signals of water Cherenkov detector array for the LHAASO project

    Energy Technology Data Exchange (ETDEWEB)

    Li, H.C., E-mail: lihuicai@ihep.ac.cn [University of Nankai, Tianjin 300071 (China); Yao, Z.G.; Chen, M.J. [Institute of High Energy Physics, Chinese Academy of Sciences, Beijing 100049 (China); Yu, C.X. [University of Nankai, Tianjin 300071 (China); Zha, M.; Wu, H.R.; Gao, B.; Wang, X.J. [Institute of High Energy Physics, Chinese Academy of Sciences, Beijing 100049 (China); Liu, J.Y.; Liao, W.Y. [University of Nankai, Tianjin 300071 (China); Huang, D.Z. [Institute of High Energy Physics, Chinese Academy of Sciences, Beijing 100049 (China)

    2017-05-11

    The Large High Altitude Air Shower Observatory (LHAASO) is planned to be built at Daocheng, Sichuan Province, China. The water Cherenkov detector array (WCDA), with an area of 78,000 m{sup 2} and capacity of 350,000 tons of purified water, is one of the major components of the LHAASO project. A 9-cell detector prototype array has been built at the Yangbajing site, Tibet, China to comprehensively understand the water Cherenkov technique and investigate the engineering issues of WCDA. In this paper, the rate and charge distribution of single-channel signals are evaluated using a full detail Monte Carlo simulation. The results are discussed and compared with the results obtained with prototype array.

  17. Semiconductor Grade, Solar Silicon Purification Project. [photovoltaic solar energy conversion

    Science.gov (United States)

    Ingle, W. M.; Rosler, R. S.; Thompson, S. W.; Chaney, R. E.

    1979-01-01

    A low cost by-product, SiF4, is reacted with mg silicon to form SiF2 gas which is polymerized. The (SiF2)x polymer is heated forming volatile SixFy homologues which disproportionate on a silicon particle bed forming silicon and SiF4. The silicon analysis procedure relied heavily on mass spectroscopic and emission spectroscopic analysis. These analyses demonstrated that major purification had occured and some samples were indistinguishable from semiconductor grade silicon (except possibly for phosphorus). However, electrical analysis via crystal growth reveal that the product contains compensated phosphorus and boron.

  18. Two-Dimensional Planar Lightwave Circuit Integrated Spatial Filter Array and Method of Use Thereof

    Science.gov (United States)

    Ai, Jun (Inventor); Dimov, Fedor (Inventor)

    2015-01-01

    A large coherent two-dimensional (2D) spatial filter array (SFA), 30 by 30 or larger, is produced by coupling a 2D planar lightwave circuit (PLC) array with a pair of lenslet arrays at the input and output side. The 2D PLC array is produced by stacking a plurality of chips, each chip with a plural number of straight PLC waveguides. A pupil array is coated onto the focal plane of the lenslet array. The PLC waveguides are produced by deposition of a plural number of silica layers on the silicon wafer, followed by photolithography and reactive ion etching (RIE) processes. A plural number of mode filters are included in the silica-on-silicon waveguide such that the PLC waveguide is transparent to the fundamental mode but higher order modes are attenuated by 40 dB or more.

  19. Analytical and Experimental Evaluation of Joining Silicon Carbide to Silicon Carbide and Silicon Nitride to Silicon Nitride for Advanced Heat Engine Applications Phase II

    Energy Technology Data Exchange (ETDEWEB)

    Sundberg, G.J.

    1994-01-01

    Techniques were developed to produce reliable silicon nitride to silicon nitride (NCX-5101) curved joins which were used to manufacture spin test specimens as a proof of concept to simulate parts such as a simple rotor. Specimens were machined from the curved joins to measure the following properties of the join interlayer: tensile strength, shear strength, 22 C flexure strength and 1370 C flexure strength. In parallel, extensive silicon nitride tensile creep evaluation of planar butt joins provided a sufficient data base to develop models with accurate predictive capability for different geometries. Analytical models applied satisfactorily to the silicon nitride joins were Norton's Law for creep strain, a modified Norton's Law internal variable model and the Monkman-Grant relationship for failure modeling. The Theta Projection method was less successful. Attempts were also made to develop planar butt joins of siliconized silicon carbide (NT230).

  20. TU-FG-209-03: Exploring the Maximum Count Rate Capabilities of Photon Counting Arrays Based On Polycrystalline Silicon

    Energy Technology Data Exchange (ETDEWEB)

    Liang, A K; Koniczek, M; Antonuk, L E; El-Mohri, Y; Zhao, Q [University of Michigan, Ann Arbor, MI (United States)

    2016-06-15

    Purpose: Photon counting arrays (PCAs) offer several advantages over conventional, fluence-integrating x-ray imagers, such as improved contrast by means of energy windowing. For that reason, we are exploring the feasibility and performance of PCA pixel circuitry based on polycrystalline silicon. This material, unlike the crystalline silicon commonly used in photon counting detectors, lends itself toward the economic manufacture of radiation tolerant, monolithic large area (e.g., ∼43×43 cm2) devices. In this presentation, exploration of maximum count rate, a critical performance parameter for such devices, is reported. Methods: Count rate performance for a variety of pixel circuit designs was explored through detailed circuit simulations over a wide range of parameters (including pixel pitch and operating conditions) with the additional goal of preserving good energy resolution. The count rate simulations assume input events corresponding to a 72 kVp x-ray spectrum with 20 mm Al filtration interacting with a CZT detector at various input flux rates. Output count rates are determined at various photon energy threshold levels, and the percentage of counts lost (e.g., due to deadtime or pile-up) is calculated from the ratio of output to input counts. The energy resolution simulations involve thermal and flicker noise originating from each circuit element in a design. Results: Circuit designs compatible with pixel pitches ranging from 250 to 1000 µm that allow count rates over a megacount per second per pixel appear feasible. Such rates are expected to be suitable for radiographic and fluoroscopic imaging. Results for the analog front-end circuitry of the pixels show that acceptable energy resolution can also be achieved. Conclusion: PCAs created using polycrystalline silicon have the potential to offer monolithic large-area detectors with count rate performance comparable to those of crystalline silicon detectors. Further improvement through detailed circuit

  1. A surface code quantum computer in silicon

    Science.gov (United States)

    Hill, Charles D.; Peretz, Eldad; Hile, Samuel J.; House, Matthew G.; Fuechsle, Martin; Rogge, Sven; Simmons, Michelle Y.; Hollenberg, Lloyd C. L.

    2015-01-01

    The exceptionally long quantum coherence times of phosphorus donor nuclear spin qubits in silicon, coupled with the proven scalability of silicon-based nano-electronics, make them attractive candidates for large-scale quantum computing. However, the high threshold of topological quantum error correction can only be captured in a two-dimensional array of qubits operating synchronously and in parallel—posing formidable fabrication and control challenges. We present an architecture that addresses these problems through a novel shared-control paradigm that is particularly suited to the natural uniformity of the phosphorus donor nuclear spin qubit states and electronic confinement. The architecture comprises a two-dimensional lattice of donor qubits sandwiched between two vertically separated control layers forming a mutually perpendicular crisscross gate array. Shared-control lines facilitate loading/unloading of single electrons to specific donors, thereby activating multiple qubits in parallel across the array on which the required operations for surface code quantum error correction are carried out by global spin control. The complexities of independent qubit control, wave function engineering, and ad hoc quantum interconnects are explicitly avoided. With many of the basic elements of fabrication and control based on demonstrated techniques and with simulated quantum operation below the surface code error threshold, the architecture represents a new pathway for large-scale quantum information processing in silicon and potentially in other qubit systems where uniformity can be exploited. PMID:26601310

  2. A surface code quantum computer in silicon.

    Science.gov (United States)

    Hill, Charles D; Peretz, Eldad; Hile, Samuel J; House, Matthew G; Fuechsle, Martin; Rogge, Sven; Simmons, Michelle Y; Hollenberg, Lloyd C L

    2015-10-01

    The exceptionally long quantum coherence times of phosphorus donor nuclear spin qubits in silicon, coupled with the proven scalability of silicon-based nano-electronics, make them attractive candidates for large-scale quantum computing. However, the high threshold of topological quantum error correction can only be captured in a two-dimensional array of qubits operating synchronously and in parallel-posing formidable fabrication and control challenges. We present an architecture that addresses these problems through a novel shared-control paradigm that is particularly suited to the natural uniformity of the phosphorus donor nuclear spin qubit states and electronic confinement. The architecture comprises a two-dimensional lattice of donor qubits sandwiched between two vertically separated control layers forming a mutually perpendicular crisscross gate array. Shared-control lines facilitate loading/unloading of single electrons to specific donors, thereby activating multiple qubits in parallel across the array on which the required operations for surface code quantum error correction are carried out by global spin control. The complexities of independent qubit control, wave function engineering, and ad hoc quantum interconnects are explicitly avoided. With many of the basic elements of fabrication and control based on demonstrated techniques and with simulated quantum operation below the surface code error threshold, the architecture represents a new pathway for large-scale quantum information processing in silicon and potentially in other qubit systems where uniformity can be exploited.

  3. The effect of lance geometry and carbon coating of silicon lances on propidium iodide uptake in lance array nanoinjection of HeLa 229 cells

    Science.gov (United States)

    Sessions, John W.; Lindstrom, Dallin L.; Hanks, Brad W.; Hope, Sandra; Jensen, Brian D.

    2016-04-01

    Connecting technology to biologic discovery is a core focus of non-viral gene therapy biotechnologies. One approach that leverages both the physical and electrical function of microelectromechanical systems (MEMS) in cellular engineering is a technology previously described as lance array nanoinjection (LAN). In brief, LAN consists of a silicon chip measuring 2 cm by 2 cm that has been etched to contain an array of 10 μm tall, solid lances that are spaced every 10 μm in a grid pattern. This array of lances is used to physically penetrate hundreds of thousands of cells simultaneously and to then electrically deliver molecular loads into cells. In this present work, two variables related to the microfabrication of the silicon lances, namely lance geometry and coating, are investigated. The purpose of both experimental variables is to assess these parameters’ effect on propidium iodide (PI), a cell membrane impermeable dye, uptake to injected HeLa 229 cells. For the lance geometry experimentation, three different microfabricated lance geometries were used which include a flat/narrow (FN, 1 μm diameter), flat/wide (FW, 2-2.5 μm diameter), and pointed (P, 1 μm diameter) lance geometries. From these tests, it was shown that the FN lances had a slightly better cell viability rate of 91.73% and that the P lances had the best PI uptake rate of 75.08%. For the lance coating experimentation, two different lances were fabricated, both silicon etched lances with some being carbon coated (CC) in a  <100 nm layer of carbon and the other lances being non-coated (Si). Results from this experiment showed no significant difference between lance types at three different nanoinjection protocols (0V, +1.5V DC, and  +5V Pulsed) for both cell viability and PI uptake rates. One exception to this is the comparison of CC/5V Pul and Si/5V Pul samples, where the CC/5V Pul samples had a cell viability rate 5% higher. Both outcomes were unexpected and reveal how to better

  4. Floating Silicon Method

    Energy Technology Data Exchange (ETDEWEB)

    Kellerman, Peter

    2013-12-21

    The Floating Silicon Method (FSM) project at Applied Materials (formerly Varian Semiconductor Equipment Associates), has been funded, in part, by the DOE under a “Photovoltaic Supply Chain and Cross Cutting Technologies” grant (number DE-EE0000595) for the past four years. The original intent of the project was to develop the FSM process from concept to a commercially viable tool. This new manufacturing equipment would support the photovoltaic industry in following ways: eliminate kerf losses and the consumable costs associated with wafer sawing, allow optimal photovoltaic efficiency by producing high-quality silicon sheets, reduce the cost of assembling photovoltaic modules by creating large-area silicon cells which are free of micro-cracks, and would be a drop-in replacement in existing high efficiency cell production process thereby allowing rapid fan-out into the industry.

  5. Reconfigurable SDM Switching Using Novel Silicon Photonic Integrated Circuit

    DEFF Research Database (Denmark)

    Ding, Yunhong; Kamchevska, Valerija; Dalgaard, Kjeld

    2016-01-01

    -division multiplexing switching using silicon photonic integrated circuit, which is fabricated on a novel silicon-oninsulator platform with buried Al mirror. The silicon photonic integrated circuit is composed of a 7x7 switch and low loss grating coupler array based multicore fiber couplers. Thanks to the Al mirror......, grating couplers with ultra-low coupling loss with optical multicore fibers is achieved. The lowest total insertion loss of the silicon integrated circuit is as low as 4.5 dB, with low crosstalk lower than -30 dB. Excellent performances in terms of low insertion loss and low crosstalk are obtained...

  6. Fully parallel write/read in resistive synaptic array for accelerating on-chip learning

    Science.gov (United States)

    Gao, Ligang; Wang, I.-Ting; Chen, Pai-Yu; Vrudhula, Sarma; Seo, Jae-sun; Cao, Yu; Hou, Tuo-Hung; Yu, Shimeng

    2015-11-01

    A neuro-inspired computing paradigm beyond the von Neumann architecture is emerging and it generally takes advantage of massive parallelism and is aimed at complex tasks that involve intelligence and learning. The cross-point array architecture with synaptic devices has been proposed for on-chip implementation of the weighted sum and weight update in the learning algorithms. In this work, forming-free, silicon-process-compatible Ta/TaO x /TiO2/Ti synaptic devices are fabricated, in which >200 levels of conductance states could be continuously tuned by identical programming pulses. In order to demonstrate the advantages of parallelism of the cross-point array architecture, a novel fully parallel write scheme is designed and experimentally demonstrated in a small-scale crossbar array to accelerate the weight update in the training process, at a speed that is independent of the array size. Compared to the conventional row-by-row write scheme, it achieves >30× speed-up and >30× improvement in energy efficiency as projected in a large-scale array. If realistic synaptic device characteristics such as device variations are taken into an array-level simulation, the proposed array architecture is able to achieve ∼95% recognition accuracy of MNIST handwritten digits, which is close to the accuracy achieved by software using the ideal sparse coding algorithm.

  7. Fully parallel write/read in resistive synaptic array for accelerating on-chip learning

    International Nuclear Information System (INIS)

    Gao, Ligang; Chen, Pai-Yu; Seo, Jae-sun; Cao, Yu; Yu, Shimeng; Wang, I-Ting; Hou, Tuo-Hung; Vrudhula, Sarma

    2015-01-01

    A neuro-inspired computing paradigm beyond the von Neumann architecture is emerging and it generally takes advantage of massive parallelism and is aimed at complex tasks that involve intelligence and learning. The cross-point array architecture with synaptic devices has been proposed for on-chip implementation of the weighted sum and weight update in the learning algorithms. In this work, forming-free, silicon-process-compatible Ta/TaO_x/TiO_2/Ti synaptic devices are fabricated, in which >200 levels of conductance states could be continuously tuned by identical programming pulses. In order to demonstrate the advantages of parallelism of the cross-point array architecture, a novel fully parallel write scheme is designed and experimentally demonstrated in a small-scale crossbar array to accelerate the weight update in the training process, at a speed that is independent of the array size. Compared to the conventional row-by-row write scheme, it achieves >30× speed-up and >30× improvement in energy efficiency as projected in a large-scale array. If realistic synaptic device characteristics such as device variations are taken into an array-level simulation, the proposed array architecture is able to achieve ∼95% recognition accuracy of MNIST handwritten digits, which is close to the accuracy achieved by software using the ideal sparse coding algorithm. (paper)

  8. Deep Ultraviolet Macroporous Silicon Filters, Phase I

    Data.gov (United States)

    National Aeronautics and Space Administration — This SBIR Phase I proposal describes a novel method to make deep and far UV optical filters from macroporous silicon. This type of filter consists of an array of...

  9. The FLARES project: An innovative detector technology for rare events searches

    Energy Technology Data Exchange (ETDEWEB)

    Capelli, S., E-mail: capelli@mib.infn.it [Dipatimento di Fisica, Università di Milano Bicocca, piazza della Scienza 3, 20126 Milano (Italy); INFN Sezione di Milano Bicocca, piazza della Scienza 3, 20126 Milano (Italy); Baldazzi, G. [Università di Bologna, Viale Berti Pichat 6/2, 40127 Bologna (Italy); INFN Sezione di Bologna, Viale Berti Pichat 6/2, 40127 Bologna (Italy); Beretta, M. [Dipatimento di Fisica, Università di Milano Bicocca, piazza della Scienza 3, 20126 Milano (Italy); INFN Sezione di Milano Bicocca, piazza della Scienza 3, 20126 Milano (Italy); Bonvicini, V. [Dipartimento di Scienza dei Materiali, Università di Milano Bicocca, Via Roberto Cozzi 55, 20126 Milano (Italy); Campana, R. [Università di Bologna, Viale Berti Pichat 6/2, 40127 Bologna (Italy); INFN Sezione di Bologna, Viale Berti Pichat 6/2, 40127 Bologna (Italy); Evangelista, Y. [INAF - IAPS, Via del Fosso del Cavaliere 100, I-00133, Roma (Italy); INFN Sezione di Roma Tor Vergata, Via della Ricerca Scientifica 1, I-00133 Roma (Italy); Fasoli, M. [INFN Sezione di Milano Bicocca, piazza della Scienza 3, 20126 Milano (Italy); Dipartimento di Scienza dei Materiali, Università di Milano Bicocca, Via Roberto Cozzi 55, 20126 Milano (Italy); Feroci, M. [INAF - IAPS, Via del Fosso del Cavaliere 100, I-00133, Roma (Italy); INFN Sezione di Roma Tor Vergata, Via della Ricerca Scientifica 1, I-00133 Roma (Italy); Fuschino, F. [INFN Sezione di Bologna, Viale Berti Pichat 6/2, 40127 Bologna (Italy); Università di Bologna, Viale Berti Pichat 6/2, 40127 Bologna (Italy); Gironi, L. [Dipatimento di Fisica, Università di Milano Bicocca, piazza della Scienza 3, 20126 Milano (Italy); INFN Sezione di Milano Bicocca, piazza della Scienza 3, 20126 Milano (Italy); and others

    2017-02-11

    FLARES is an innovative project in the field of rare events searches, such as the search for the neutrinoless double beta decay. It aims at demonstrating the high potential of a technique that combines ultra-pure scintillating crystals with arrays of high performance silicon drift detectors, operated at about 120 K, to reach a 1% level energy resolution. The proposed technique will combine in a single device all the demanding features needed by an ideal experiment looking for rare events. The performance of a first production of matrices of silicon drift detectors as well as first measurements of the low temperature light yield of a selection of high purity scintillating crystals will be presented and discussed.

  10. Novel micromachined on-chip 10-elements wire-grid array operating at 60 GHz

    KAUST Repository

    Sallam, Mai O.

    2017-06-07

    This paper presents a new topology for a wire-grid antenna array which operates at 60 GHz. The array consists of ten λ/2 dipole radiators connected via non-radiating connectors. Both radiators and connectors are placed on top of narrow silicon walls. The antenna is fed with a coplanar microstrip lines placed at the other side of the wafer and is connected with its feeding transmission lines using through-silicon-vias. The antenna is optimized for two cases: using high- and low-resistivity silicon substrates. The former has better radiation characteristics while the later is more compatible with the driving electronic circuits. The antenna has high directivity, reasonable bandwidth and high polarization purity.

  11. Amorphous silicon based radiation detectors

    International Nuclear Information System (INIS)

    Perez-Mendez, V.; Cho, G.; Drewery, J.; Jing, T.; Kaplan, S.N.; Qureshi, S.; Wildermuth, D.; Fujieda, I.; Street, R.A.

    1991-07-01

    We describe the characteristics of thin(1 μm) and thick (>30μm) hydrogenated amorphous silicon p-i-n diodes which are optimized for detecting and recording the spatial distribution of charged particles, x-rays and γ rays. For x-ray, γ ray, and charged particle detection we can use thin p-i-n photosensitive diode arrays coupled to evaporated layers of suitable scintillators. For direct detection of charged particles with high resistance to radiation damage, we use the thick p-i-n diode arrays. 13 refs., 7 figs

  12. Characterization of a patch-clamp microchannel array towards neuronal networks analysis

    DEFF Research Database (Denmark)

    Alberti, Massimo; Snakenborg, Detlef; Lopacinska, Joanna M.

    2010-01-01

    for simultaneous patch clamping of cultured cells or neurons in the same network. A disposable silicon/silicon dioxide (Si/SiO2) chip with a microhole array was integrated in a microfluidic system for cell handling, perfusion and electrical recording. Fluidic characterization showed that our PC mu CA can work...

  13. Proceedings of the Flat-Plate Solar Array Project Research Forum on Photovoltaic Metallization Systems

    Science.gov (United States)

    1983-01-01

    A photovoltaic Metallization Research forum, under the sponsorship of the Flat-Plate Solar Array Project consisted of five sessions, covering: (1) the current status of metallization systems, (2) system design, (3) thick-film metallization, (4) advanced techniques, and (5) future metallization challenges.

  14. Production of electronic grade lunar silicon by disproportionation of silicon difluoride

    Science.gov (United States)

    Agosto, William N.

    1993-01-01

    Waldron has proposed to extract lunar silicon by sodium reduction of sodium fluorosilicate derived from reacting sodium fluoride with lunar silicon tetrafluoride. Silicon tetrafluoride is obtained by the action of hydrofluoric acid on lunar silicates. While these reactions are well understood, the resulting lunar silicon is not likely to meet electronic specifications of 5 nines purity. Dale and Margrave have shown that silicon difluoride can be obtained by the action of silicon tetrafluoride on elemental silicon at elevated temperatures (1100-1200 C) and low pressures (1-2 torr). The resulting silicon difluoride will then spontaneously disproportionate into hyperpure silicon and silicon tetrafluoride in vacuum at approximately 400 C. On its own merits, silicon difluoride polymerizes into a tough waxy solid in the temperature range from liquid nitrogen to about 100 C. It is the silicon analog of teflon. Silicon difluoride ignites in moist air but is stable under lunar surface conditions and may prove to be a valuable industrial material that is largely lunar derived for lunar surface applications. The most effective driver for lunar industrialization may be the prospects for industrial space solar power systems in orbit or on the moon that are built with lunar materials. Such systems would require large quantities of electronic grade silicon or compound semiconductors for photovoltaics and electronic controls. Since silicon is the most abundant semimetal in the silicate portion of any solar system rock (approximately 20 wt percent), lunar silicon production is bound to be an important process in such a solar power project. The lunar silicon extraction process is discussed.

  15. Electrochemically replicated smooth aluminum foils for anodic alumina nanochannel arrays

    International Nuclear Information System (INIS)

    Biring, Sajal; Tsai, K-T; Sur, Ujjal Kumar; Wang, Y-L

    2008-01-01

    A fast electrochemical replication technique has been developed to fabricate large-scale ultra-smooth aluminum foils by exploiting readily available large-scale smooth silicon wafers as the masters. Since the adhesion of aluminum on silicon depends on the time of surface pretreatment in water, it is possible to either detach the replicated aluminum from the silicon master without damaging the replicated aluminum and master or integrate the aluminum film to the silicon substrate. Replicated ultra-smooth aluminum foils are used for the growth of both self-organized and lithographically guided long-range ordered arrays of anodic alumina nanochannels without any polishing pretreatment

  16. Performance, size, mass, and cost estimates for projected 1kW EOL Si, InP, and GaAs arrays

    Science.gov (United States)

    Slifer, Luther W., Jr.

    1991-01-01

    One method of evaluating the potential of emerging solar cell and array technologies is to compare their projected capabilities in space flight applications to those of established Si solar cells and arrays. Such an application-oriented comparison provides an integrated view of the elemental comparisons of efficiency, radiation resistance, temperature sensitivity, size, mass, and cost in combination. In addition, the assumptions necessary to make the comparisons provide insights helpful toward determining necessary areas of development or evaluation. Finally, as developments and evaluations progress, the results can be used in more precisely defining the overall potential of the new technologies in comparison to existing technologies. The projected capabilities of Si, InP, and GaAs cells and arrays are compared.

  17. Generation and manipulation of entangled photons on silicon chips

    Directory of Open Access Journals (Sweden)

    Matsuda Nobuyuki

    2016-08-01

    Full Text Available Integrated quantum photonics is now seen as one of the promising approaches to realize scalable quantum information systems. With optical waveguides based on silicon photonics technologies, we can realize quantum optical circuits with a higher degree of integration than with silica waveguides. In addition, thanks to the large nonlinearity observed in silicon nanophotonic waveguides, we can implement active components such as entangled photon sources on a chip. In this paper, we report recent progress in integrated quantum photonic circuits based on silicon photonics. We review our work on correlated and entangled photon-pair sources on silicon chips, using nanoscale silicon waveguides and silicon photonic crystal waveguides. We also describe an on-chip quantum buffer realized using the slow-light effect in a silicon photonic crystal waveguide. As an approach to combine the merits of different waveguide platforms, a hybrid quantum circuit that integrates a silicon-based photon-pair source and a silica-based arrayed waveguide grating is also presented.

  18. Electrochemical detection of dopamine using arrays of liquid-liquid micro-interfaces created within micromachined silicon membranes

    International Nuclear Information System (INIS)

    Berduque, Alfonso; Zazpe, Raul; Arrigan, Damien W.M.

    2008-01-01

    The detection of protonated dopamine by differential pulse voltammetry (DPV) and square wave voltammetry (SWV) at arrays of micro-interfaces between two immiscible electrolyte solutions (μITIES) is presented. Microfabricated porous silicon membranes (consisting of eight pores, 26.6 μm in radius and 500 μm pore-pore separation, in a hexagonal layout) were prepared by photolithographic and etching procedures. The membrane pores were fabricated with hydrophobic internal walls so that the organic phase filled the pores and created the liquid interface at the aqueous side of the membrane. These were used for harnessing the benefits of three-dimensional diffusion to the interface and for interface stabilisation. The liquid-liquid interface provides a simple method to overcome the major problem in the voltammetric detection of dopamine at solid electrodes due to the co-existence of ascorbate at higher concentrations. Selectivity for dopamine over ascorbate was achieved by the use of dibenzo-18-crown-6 (DB18C6) for the facilitated ion transfer of dopamine across the μITIES array. Under these conditions, the presence of ascorbate in excess did not interfere in the detection of dopamine and the lowest concentration detectable was ca. 0.5 μM. In addition, the drawback of current signal saturation (non-linear increase of the peak current with the concentration of dopamine) observed at conventional (millimetre-sized) liquid-liquid interfaces was overcome using the microfabricated porous membranes

  19. Silicon Wafer-Based Platinum Microelectrode Array Biosensor for Near Real-Time Measurement of Glutamate in Vivo

    Directory of Open Access Journals (Sweden)

    Nigel T. Maidment

    2008-08-01

    Full Text Available Using Micro-Electro-Mechanical-Systems (MEMS technologies, we have developed silicon wafer-based platinum microelectrode arrays (MEAs modified with glutamate oxidase (GluOx for electroenzymatic detection of glutamate in vivo. These MEAs were designed to have optimal spatial resolution for in vivo recordings. Selective detection of glutamate in the presence of the electroactive interferents, dopamine and ascorbic acid, was attained by deposition of polypyrrole and Nafion. The sensors responded to glutamate with a limit of detection under 1μM and a sub-1-second response time in solution. In addition to extensive in vitro characterization, the utility of these MEA glutamate biosensors was also established in vivo. In the anesthetized rat, these MEA glutamate biosensors were used for detection of cortically-evoked glutamate release in the ventral striatum. The MEA biosensors also were applied to the detection of stress-induced glutamate release in the dorsal striatum of the freely-moving rat.

  20. Projecting light beams with 3D waveguide arrays

    Science.gov (United States)

    Crespi, Andrea; Bragheri, Francesca

    2017-01-01

    Free-space light beams with complex intensity patterns, or non-trivial phase structure, are demanded in diverse fields, ranging from classical and quantum optical communications, to manipulation and imaging of microparticles and cells. Static or dynamic spatial light modulators, acting on the phase or intensity of an incoming light wave, are the conventional choices to produce beams with such non-trivial characteristics. However, interfacing these devices with optical fibers or integrated optical circuits often requires difficult alignment or cumbersome optical setups. Here we explore theoretically and with numerical simulations the potentialities of directly using the output of engineered three-dimensional waveguide arrays, illuminated with linearly polarized light, to project light beams with peculiar structures. We investigate through a collection of illustrative configurations the far field distribution, showing the possibility to achieve orbital angular momentum, or to produce elaborate intensity or phase patterns with several singularity points. We also simulate the propagation of the projected beam, showing the possibility to concentrate light. We note that these devices should be at reach of current technology, thus perspectives are open for the generation of complex free-space optical beams from integrated waveguide circuits.

  1. Field assisted photoemission by silicon photocathodes

    International Nuclear Information System (INIS)

    Aboubacar, A.; Dupont, M.; El Manouni, A.; Querrou, M.; Says, L.P.

    1991-01-01

    Silicon photocathodes with arrays of tips have been prepared using microlithographic techniques. Current emission due to field effect has been measured in the case of heavy and weakly doped boron Silicon. An Argon continuous laser has been used to produce photocurrent. An instantaneous current (600 μA) with a moderate laser power (83 mW), has been produced on weakly doped photocathodes. This current corresponds to an average quantum yield (purely photoelectric) of about 1.7%, and a local current density in the range of a few 10 6 A m -2

  2. Standard practice for radiological examination using digital detector arrays

    CERN Document Server

    American Society for Testing and Materials. Philadelphia

    2010-01-01

    1.1 This practice establishes the minimum requirements for radiological examination for metallic and nonmetallic material using a digital detector array (DDA) system. 1.2 The requirements in this practice are intended to control the quality of radiologic images and are not intended to establish acceptance criteria for parts or materials. 1.3 This practice covers the radiologic examination with DDAs including DDAs described in Practice E2597 such as a device that contains a photoconductor attached to a Thin Film Transistor (TFT) read out structure, a device that has a phosphor coupled directly to an amorphous silicon read-out structure, and devices where a phosphor is coupled to a CMOS (Complementary metal–oxide–semiconductor) array, a Linear Detector Array (LDA) or a CCD (charge coupled device) crystalline silicon read-out structure. 1.4 The DDA shall be selected for an NDT application based on knowledge of the technology described in Guide , and of the selected DDA properties provided by the manufactu...

  3. Measurements on irradiated L1 sensor prototypes for the D0 Run IIb silicon detector project

    International Nuclear Information System (INIS)

    Ahsan, M.; Bolton, T.; Carnes, K.; Demarteau, M.; Demina, R.; Gray, T.; Korjenevski, S.; Lehner, F.; Lipton, R.; Mao, H.S.; McCarthy, R.

    2010-01-01

    We report on irradiation studies of Hamamatsu prototype silicon microstrip detectors for layer 1 of the D0 upgrade project for Run IIb. The irradiation was carried out with 10 MeV protons up to proton fluence of 10 14 p/cm 2 at the J.R. Macdonald Laboratory, Manhatten, KS. The flux calibration was carefully checked using different dose normalization techniques. The results based on the obtained sensor leakage currents after irradiation show that the NIEL scaling hypothesis for low energy protons has to be applied with great care. We observe 30-40% less radiation damage in silicon for 10 MeV proton exposure than is expected from the predicted NIEL scaling.

  4. Measurements on irradiated L1 sensor prototypes for the D0 Run IIb silicon detector project

    Energy Technology Data Exchange (ETDEWEB)

    Ahsan, M.; Bolton, T.; Carnes, K.; /Kansas State U.; Demarteau, M.; /Fermilab; Demina, R.; /Rochester U.; Gray, T.; /Kansas State U.; Korjenevski, S.; /Rochester U.; Lehner, F.; /Zurich U.; Lipton, R.; Mao, H.S.; /Fermilab; McCarthy, R.; /SUNY, Stony Brook /Kansas State U. /Fermilab

    2010-01-01

    We report on irradiation studies of Hamamatsu prototype silicon microstrip detectors for layer 1 of the D0 upgrade project for Run IIb. The irradiation was carried out with 10 MeV protons up to proton fluence of 10{sup 14} p/cm{sup 2} at the J.R. Macdonald Laboratory, Manhatten, KS. The flux calibration was carefully checked using different dose normalization techniques. The results based on the obtained sensor leakage currents after irradiation show that the NIEL scaling hypothesis for low energy protons has to be applied with great care. We observe 30-40% less radiation damage in silicon for 10 MeV proton exposure than is expected from the predicted NIEL scaling.

  5. Gate protective device for SOS array

    Science.gov (United States)

    Meyer, J. E., Jr.; Scott, J. H.

    1972-01-01

    Protective gate device consisting of alternating heavily doped n(+) and p(+) diffusions eliminates breakdown voltages in silicon oxide on sapphire arrays caused by electrostatic discharge from person or equipment. Diffusions are easily produced during normal double epitaxial processing. Devices with nine layers had 27-volt breakdown.

  6. Development of an oxidized porous silicon vacuum microtriode

    Energy Technology Data Exchange (ETDEWEB)

    Smith, II, Don Deewayne [Texas A & M Univ., College Station, TX (United States)

    1994-05-01

    In order to realize a high-power microwave amplifier design known as a gigatron, a gated field emission array must be developed that can deliver a high-intensity electron beam at gigahertz frequencies. No existing field emission device meets the requirements for a gigatron cathode. In the present work, a porous silicon-based approach is evaluated. The use of porous silicon reduces the size of a single emitter to the nanometer scale, and a true two-dimensional array geometry can be approached. A wide number of applications for such a device exist in various disciplines. Oxidized porous silicon vacuum diodes were first developed in 1990. No systematic study had been done to characterize the performance of these devices as a function of the process parameters. The author has done the first such study, fabricating diodes from p<100>, p<111>, and n<100> silicon substrates. Anodization current densities from 11 mA/cm2 to 151 mA/cm2 were used, and Fowler-Nordheim behavior was observed in over 80% of the samples. In order to effectively adapt this technology to mainstream vacuum microelectronic applications, a means of creating a gated triodic structure must be found. No previous attempts had successfully yielded such a device. The author has succeeded in utilizing a novel metallization method to fabricate the first operational oxidized porous silicon vacuum microtriodes, and results are encouraging.

  7. Chronic in vivo stability assessment of carbon fiber microelectrode arrays

    Science.gov (United States)

    Patel, Paras R.; Zhang, Huanan; Robbins, Matthew T.; Nofar, Justin B.; Marshall, Shaun P.; Kobylarek, Michael J.; Kozai, Takashi D. Y.; Kotov, Nicholas A.; Chestek, Cynthia A.

    2016-12-01

    Objective. Individual carbon fiber microelectrodes can record unit activity in both acute and semi-chronic (∼1 month) implants. Additionally, new methods have been developed to insert a 16 channel array of carbon fiber microelectrodes. Before assessing the in vivo long-term viability of these arrays, accelerated soak tests were carried out to determine the most stable site coating material. Next, a multi-animal, multi-month, chronic implantation study was carried out with carbon fiber microelectrode arrays and silicon electrodes. Approach. Carbon fibers were first functionalized with one of two different formulations of PEDOT and subjected to accelerated aging in a heated water bath. After determining the best PEDOT formula to use, carbon fiber arrays were chronically implanted in rat motor cortex. Some rodents were also implanted with a single silicon electrode, while others received both. At the end of the study a subset of animals were perfused and the brain tissue sliced. Tissue sections were stained for astrocytes, microglia, and neurons. The local reactive responses were assessed using qualitative and quantitative methods. Main results. Electrophysiology recordings showed the carbon fibers detecting unit activity for at least 3 months with average amplitudes of ∼200 μV. Histology analysis showed the carbon fiber arrays with a minimal to non-existent glial scarring response with no adverse effects on neuronal density. Silicon electrodes showed large glial scarring that impacted neuronal counts. Significance. This study has validated the use of carbon fiber microelectrode arrays as a chronic neural recording technology. These electrodes have demonstrated the ability to detect single units with high amplitude over 3 months, and show the potential to record for even longer periods. In addition, the minimal reactive response should hold stable indefinitely, as any response by the immune system may reach a steady state after 12 weeks.

  8. Theory for optimal design of waveguiding light concentrators in photovoltaic microcell arrays.

    Science.gov (United States)

    Semichaevsky, Andrey V; Johnson, Harley T; Yoon, Jongseung; Nuzzo, Ralph G; Li, Lanfang; Rogers, John

    2011-06-10

    Efficiency of ultrathin flexible solar photovoltaic silicon microcell arrays can be significantly improved using nonimaging solar concentrators. A fluorophore is introduced to match the solar spectrum and the low-reflectivity wavelength range of Si, reduce the escape losses, and allow the nontracking operation. In this paper we optimize our solar concentrators using a luminescent/nonluminescent photon transport model. Key modeling results are compared quantitatively to experiments and are in good agreement with the latter. Our solar concentrator performance is not limited by the dye self-absorption. Bending deformations of the flexible solar collectors do not result in their indirect gain degradation compared to flat solar concentrators with the same projected area.

  9. Photovoltaic cell array

    Science.gov (United States)

    Eliason, J. T. (Inventor)

    1976-01-01

    A photovoltaic cell array consisting of parallel columns of silicon filaments is described. Each fiber is doped to produce an inner region of one polarity type and an outer region of an opposite polarity type to thereby form a continuous radial semi conductor junction. Spaced rows of electrical contacts alternately connect to the inner and outer regions to provide a plurality of electrical outputs which may be combined in parallel or in series.

  10. Skin vaccination against cervical cancer associated human papillomavirus with a novel micro-projection array in a mouse model.

    Directory of Open Access Journals (Sweden)

    Holly J Corbett

    Full Text Available BACKGROUND: Better delivery systems are needed for routinely used vaccines, to improve vaccine uptake. Many vaccines contain alum or alum based adjuvants. Here we investigate a novel dry-coated densely-packed micro-projection array skin patch (Nanopatch™ as an alternate delivery system to intramuscular injection for delivering an alum adjuvanted human papillomavirus (HPV vaccine (Gardasil® commonly used as a prophylactic vaccine against cervical cancer. METHODOLOGY/PRINCIPAL FINDINGS: Micro-projection arrays dry-coated with vaccine material (Gardasil® delivered to C57BL/6 mouse ear skin released vaccine within 5 minutes. To assess vaccine immunogenicity, doses of corresponding to HPV-16 component of the vaccine between 0.43 ± 0.084 ng and 300 ± 120 ng (mean ± SD were administered to mice at day 0 and day 14. A dose of 55 ± 6.0 ng delivered intracutaneously by micro-projection array was sufficient to produce a maximal virus neutralizing serum antibody response at day 28 post vaccination. Neutralizing antibody titres were sustained out to 16 weeks post vaccination, and, for comparable doses of vaccine, somewhat higher titres were observed with intracutaneous patch delivery than with intramuscular delivery with the needle and syringe at this time point. CONCLUSIONS/SIGNIFICANCE: Use of dry micro-projection arrays (Nanopatch™ has the potential to overcome the need for a vaccine cold chain for common vaccines currently delivered by needle and syringe, and to reduce risk of needle-stick injury and vaccine avoidance due to the fear of the needle especially among children.

  11. A CMOS ASIC Design for SiPM Arrays.

    Science.gov (United States)

    Dey, Samrat; Banks, Lushon; Chen, Shaw-Pin; Xu, Wenbin; Lewellen, Thomas K; Miyaoka, Robert S; Rudell, Jacques C

    2011-12-01

    Our lab has previously reported on novel board-level readout electronics for an 8×8 silicon photomultiplier (SiPM) array featuring row/column summation technique to reduce the hardware requirements for signal processing. We are taking the next step by implementing a monolithic CMOS chip which is based on the row-column architecture. In addition, this paper explores the option of using diagonal summation as well as calibration to compensate for temperature and process variations. Further description of a timing pickoff signal which aligns all of the positioning (spatial channels) pulses in the array is described. The ASIC design is targeted to be scalable with the detector size and flexible to accommodate detectors from different vendors. This paper focuses on circuit implementation issues associated with the design of the ASIC to interface our Phase II MiCES FPGA board with a SiPM array. Moreover, a discussion is provided for strategies to eventually integrate all the analog and mixed-signal electronics with the SiPM, on either a single-silicon substrate or multi-chip module (MCM).

  12. Enhanced photoluminescence from porous silicon by hydrogen-plasma etching

    International Nuclear Information System (INIS)

    Wang, Q.; Gu, C.Z.; Li, J.J.; Wang, Z.L.; Shi, C.Y.; Xu, P.; Zhu, K.; Liu, Y.L.

    2005-01-01

    Porous silicon (PS) was etched by hydrogen plasma. On the surface a large number of silicon nanocone arrays and nanocrystallites were formed. It is found that the photoluminescence of the H-etched porous silicon is highly enhanced. Correspondingly, three emission centers including red, green, and blue emissions are shown to contribute to the enhanced photoluminescence of the H-etched PS, which originate from the recombination of trapped electrons with free holes due to Si=O bonding at the surface of the silicon nanocrystallites, the quantum size confinement effect, and oxygen vacancy in the surface SiO 2 layer, respectively. In particular, the increase of SiO x (x<2) formed on the surface of the H-etched porous silicon plays a very important role in enhancing the photoluminescence properties

  13. Silicon photomultipliers in AMIGA muon counters

    Energy Technology Data Exchange (ETDEWEB)

    Botti, Ana Martina [Institut fuer Kernphysik, Karlsruher Institut fuer Technologie (Germany); Instituto de Tecnologias en Deteccion y Astroparticulas (ITeDA) (Argentina); Collaboration: Pierre-Auger-Collaboration

    2016-07-01

    The project AMIGA (Auger Muons and Infill for the Ground Array) aims to extend the energy range at the Pierre Auger Observatory to observe cosmic rays of lower energies (down to ∝10{sup 17} eV) and to study the transition from extragalactic to galactic cosmic rays. AMIGA is compounded by an infill of surface detectors (employing Cherenkov radiation detection in water) and muon counters. The AMIGA muon counters consist of an array of buried modules composed of 64 scintillator bars, a multi-pixel Photo Multiplier Tube (PMT) and the corresponding electronic of acquisition which works along with the surface detector. Currently, ITeDA is evaluating the feasibility of replacing PMTs with silicon photomultipliers (SiPM) without performing any substantial modification in the digital readout nor in the mechanical design. I present calibration results of a prototype module associated to the surface detector Toune of the Pierre Auger Observatory using a SiPM Hamamatsu S1257-100C plugged to the standard AMIGA front-end electronics. In addition, a study concerning gain stability and temperature variation has also been performed and is reported. I finally discuss a comparison between traces measured by both photodetectors (PMT and SiPM) for modules associated to the surface detector Toune.

  14. A silicon strip detector array for energy verification and quality assurance in heavy ion therapy.

    Science.gov (United States)

    Debrot, Emily; Newall, Matthew; Guatelli, Susanna; Petasecca, Marco; Matsufuji, Naruhiro; Rosenfeld, Anatoly B

    2018-02-01

    The measurement of depth dose profiles for range and energy verification of heavy ion beams is an important aspect of quality assurance procedures for heavy ion therapy facilities. The steep dose gradients in the Bragg peak region of these profiles require the use of detectors with high spatial resolution. The aim of this work is to characterize a one dimensional monolithic silicon detector array called the "serial Dose Magnifying Glass" (sDMG) as an independent ion beam energy and range verification system used for quality assurance conducted for ion beams used in heavy ion therapy. The sDMG detector consists of two linear arrays of 128 silicon sensitive volumes each with an effective size of 2mm × 50μm × 100μm fabricated on a p-type substrate at a pitch of 200 μm along a single axis of detection. The detector was characterized for beam energy and range verification by measuring the response of the detector when irradiated with a 290 MeV/u 12 C ion broad beam incident along the single axis of the detector embedded in a PMMA phantom. The energy of the 12 C ion beam incident on the detector and the residual energy of an ion beam incident on the phantom was determined from the measured Bragg peak position in the sDMG. Ad hoc Monte Carlo simulations of the experimental setup were also performed to give further insight into the detector response. The relative response profiles along the single axis measured with the sDMG detector were found to have good agreement between experiment and simulation with the position of the Bragg peak determined to fall within 0.2 mm or 1.1% of the range in the detector for the two cases. The energy of the beam incident on the detector was found to vary less than 1% between experiment and simulation. The beam energy incident on the phantom was determined to be (280.9 ± 0.8) MeV/u from the experimental and (280.9 ± 0.2) MeV/u from the simulated profiles. These values coincide with the expected energy of 281 MeV/u. The sDMG detector

  15. Optimal design of aperiodic, vertical silicon nanowire structures for photovoltaics.

    Science.gov (United States)

    Lin, Chenxi; Povinelli, Michelle L

    2011-09-12

    We design a partially aperiodic, vertically-aligned silicon nanowire array that maximizes photovoltaic absorption. The optimal structure is obtained using a random walk algorithm with transfer matrix method based electromagnetic forward solver. The optimal, aperiodic structure exhibits a 2.35 times enhancement in ultimate efficiency compared to its periodic counterpart. The spectral behavior mimics that of a periodic array with larger lattice constant. For our system, we find that randomly-selected, aperiodic structures invariably outperform the periodic array.

  16. Deflection tomography of a complex flow field based on the visualization of projection array

    Energy Technology Data Exchange (ETDEWEB)

    Zhang Bin; Miao Zhanli, E-mail: zb-sh@163.com [College of Electromechanical Engineering, Qingdao University of Science and Technology, Qingdao, Shandong 266061 (China)

    2011-02-01

    Tomographic techniques are used for the investigation of complex flow fields by means of deflectometric methods. A new deflection tomographic setup for obtaining an array of multidirectional deflectograms is presented. Deflection projections in different angles of view can be captured synchronously in same optical path condition and arranged on the camera in two rows with three views in each row. Tikhonov regularization method is used to reconstruct temperature distribution from deflectometric projection data. The conjugate gradient method is used to compute the regularized solution for the least-square equations. The asymmetric flame temperature distribution in the horizontal section was reconstructed from limited view angle projections. The experimental results of reconstruction from real projection data were satisfactory when compared with the direct thermocouple measurements.

  17. Next Generation Microshutter Arrays Project

    Data.gov (United States)

    National Aeronautics and Space Administration — We propose to develop the next generation MicroShutter Array (MSA) as a multi-object field selector for missions anticipated in the next two decades. For many...

  18. Low-energy nuclear physics with high-segmentation silicon arrays

    International Nuclear Information System (INIS)

    Betts, R.R.; Univ. of Illinois, Chicago, IL

    1994-01-01

    A brief history is given of silicon detectors leading up to the development of ion-implanted strip detectors. Two examples of their use in low energy nuclear physics are discussed; the search for exotic alpha-chain states in 24 Mg and studies of anomalous positron-electron pairs produced in collisions of very heavy ions

  19. Burst annealing of electron damage in silicon solar cells

    International Nuclear Information System (INIS)

    Day, A.C.; Horne, W.E.; Thompson, M.A.; Lancaster, C.A.

    1985-01-01

    A study has been performed of burst annealing of electron damage in silicon solar cells. Three groups of cells consisting of 3 and 0.3 ohm-cm silicon were exposed to fluences of 2 x 10 to the 14th power, 4 x 10 to the 14th power, and 8 x 10 to the 14th power 1-MeV electrons/sq cm, respectively. They were subsequently subjected to 1-minute bursts of annealing at 500 C. The 3 ohm-cm cells showed complete recovery from each fluence level. The 0.3 ohm-cm cells showed complete recovery from the 2 x 10 to the 14th power e/sq cm fluence; however, some of the 0.3 ohm-cm cells did not recover completely from the higher influences. From an analysis of the results it is concluded that burst annealing of moderate to high resistivity silicon cell arrays in space is feasible and that with more complete understanding, even the potentially higher efficiency low resistivity cells may be usable in annealable arrays in space

  20. Multimodal Electrothermal Silicon Microgrippers for Nanotube Manipulation

    DEFF Research Database (Denmark)

    Nordström Andersen, Karin; Petersen, Dirch Hjorth; Carlson, Kenneth

    2009-01-01

    Microgrippers that are able to manipulate nanoobjects reproducibly are key components in 3-D nanomanipulation systems. We present here a monolithic electrothermal microgripper prepared by silicon microfabrication, and demonstrate pick-and-place of an as-grown carbon nanotube from a 2-D array onto...

  1. Anisotropic multi-spot DBR porous silicon chip for the detection of human immunoglobin G.

    Science.gov (United States)

    Cho, Bomin; Um, Sungyong; Sohn, Honglae

    2014-07-01

    Asymmetric porous silicon multilayer (APSM)-based optical biosensor was developed to specify human Immunoglobin G (Ig G). APSM chip was generated by an electrochemical etching of silicon wafer using an asymmetric electrode configuration in aqueous ethanolic HF solution and constituted with nine arrayed porous silicon multilayer. APSM prepared from anisotropic etching conditions displayed a sharp reflection resonance in the reflectivity spectrum. Each spot displayed single reflection resonance at different wavelengths as a function of the lateral distance from the Pt counter electrode. The sensor system was consisted of the 3 x 3 spot array of APSM modified with protein A. The system was probed with an aqueous human Ig G. Molecular binding and specificity was monitored as a shift in wavelength of reflection resonance.

  2. Automated Array Assembly, Phase 2. Quarterly technical progress report, fourth quarter 1977. Texas Instruments report No. 03-77-56

    Energy Technology Data Exchange (ETDEWEB)

    Carbajal, B.G.

    1978-01-01

    The Automated Array Assembly Task, Phase 2 of the Low Cost Silicon Solar Array (LSSA) Project, is a process development task. This contract includes solar cell module process development activities in the areas of Surface Preparation, Plasma Processing, Diffusion, Cell Processing and Module Fabrication. In addition, a High Efficiency Cell Development Activity is included. During this quarter, effort was concentrated on wafer etching for saw damage removal, establishing a standard phosphorous diffusion process and a baseline solar cell process as a test bed, designing a large area square cell including test sites, analyzing module layouts for optimum packing efficiency and fabricating the first Tandem Junction Cells (TJC) for this contract. A TJC with backside contacts gave 15.1% efficiency at AM1.

  3. An innovative silicon photomultiplier digitizing camera for gamma-ray astronomy

    Energy Technology Data Exchange (ETDEWEB)

    Heller, M. [DPNC-Universite de Geneve, Geneva (Switzerland); Schioppa, E. Jr; Porcelli, A.; Pujadas, I.T.; Della Volpe, D.; Montaruli, T.; Cadoux, F.; Favre, Y.; Christov, A.; Rameez, M.; Miranda, L.D.M. [DPNC-Universite de Geneve, Geneva (Switzerland); Zietara, K.; Idzkowski, B.; Jamrozy, M.; Ostrowski, M.; Stawarz, L.; Zagdanski, A. [Jagellonian University, Astronomical Observatory, Krakow (Poland); Aguilar, J.A. [DPNC-Universite de Geneve, Geneva (Switzerland); Universite Libre Bruxelles, Faculte des Sciences, Brussels (Belgium); Prandini, E.; Lyard, E.; Neronov, A.; Walter, R. [Universite de Geneve, Department of Astronomy, Geneva (Switzerland); Rajda, P.; Bilnik, W.; Kasperek, J.; Lalik, K.; Wiecek, M. [AGH University of Science and Technology, Krakow (Poland); Blocki, J.; Mach, E.; Michalowski, J.; Niemiec, J.; Skowron, K.; Stodulski, M. [Instytut Fizyki Jadrowej im. H. Niewodniczanskiego Polskiej Akademii Nauk, Krakow (Poland); Bogacz, L. [Jagiellonian University, Department of Information Technologies, Krakow (Poland); Borkowski, J.; Frankowski, A.; Janiak, M.; Moderski, R. [Polish Academy of Science, Nicolaus Copernicus Astronomical Center, Warsaw (Poland); Bulik, T.; Grudzinska, M. [University of Warsaw, Astronomical Observatory, Warsaw (Poland); Mandat, D.; Pech, M.; Schovanek, P. [Institute of Physics of the Czech Academy of Sciences, Prague (Czech Republic); Marszalek, A.; Stodulska, M. [Instytut Fizyki Jadrowej im. H. Niewodniczanskiego Polskiej Akademii Nauk, Krakow (Poland); Jagellonian University, Astronomical Observatory, Krakow (Poland); Pasko, P.; Seweryn, K. [Centrum Badan Kosmicznych Polskiej Akademii Nauk, Warsaw (Poland); Sliusar, V. [Universite de Geneve, Department of Astronomy, Geneva (Switzerland); Taras Shevchenko National University of Kyiv, Astronomical Observatory, Kyiv (Ukraine)

    2017-01-15

    The single-mirror small-size telescope (SST-1M) is one of the three proposed designs for the small-size telescopes (SSTs) of the Cherenkov Telescope Array (CTA) project. The SST-1M will be equipped with a 4 m-diameter segmented reflector dish and an innovative fully digital camera based on silicon photo-multipliers. Since the SST sub-array will consist of up to 70 telescopes, the challenge is not only to build telescopes with excellent performance, but also to design them so that their components can be commissioned, assembled and tested by industry. In this paper we review the basic steps that led to the design concepts for the SST-1M camera and the ongoing realization of the first prototype, with focus on the innovative solutions adopted for the photodetector plane and the readout and trigger parts of the camera. In addition, we report on results of laboratory measurements on real scale elements that validate the camera design and show that it is capable of matching the CTA requirements of operating up to high moonlight background conditions. (orig.)

  4. Development of a process for high capacity arc heater production of silicon for solar arrays

    Science.gov (United States)

    Meyer, T. N.

    1980-01-01

    A high temperature silicon production process using existing electric arc heater technology is discussed. Silicon tetrachloride and a reductant, liquid sodium, were injected into an arc heated mixture of hydrogen and argon. Under these high temperature conditions, a very rapid reaction occurred, yielding silicon and gaseous sodium chloride. Techniques for high temperature separation and collection of the molten silicon were developed. The desired degree of separation was not achieved. The electrical, control and instrumentation, cooling water, gas, SiCl4, and sodium systems are discussed. The plasma reactor, silicon collection, effluent disposal, the gas burnoff stack, and decontamination and safety are also discussed. Procedure manuals, shakedown testing, data acquisition and analysis, product characterization, disassembly and decontamination, and component evaluation are reviewed.

  5. Offshore wind power fundaments. Practical experience from the projects London Array and Dan Tysk; Offshore Windkraft Fundamente. Praxiserfahrung aus den Projekten London Array und DanTysk

    Energy Technology Data Exchange (ETDEWEB)

    Horn, Moritz [Bilfinger Berger Ingenieurbau GmbH, Hamburg (Germany). Ingenieurwasserbau

    2012-11-01

    Based on a collection of diagrams and images the authors of the contribution under consideration report on practical experiences resulting from the project London Array and Dan Tysk with respect to the foundations of offshore wind turbines.

  6. Heat-rejection design for large concentrating solar arrays

    Science.gov (United States)

    French, E. P.

    1980-01-01

    This paper considers the effect of heat rejection devices (radiators) on the performance and cost of large concentrating solar arrays for space application. Overall array characteristics are derived from the weight, cost, and performance of four major components; namely primary structure, optics/secondary structure, radiator, and solar panel. An ideal concentrator analysis is used to establish general cost and performance trends independent of specific array design. Both passive and heat-pipe radiation are evaluated, with an incremental cost-of-power approach used in the evaluation. Passive radiators are found to be more cost effective with silicon than with gallium arsenide (GaAs) arrays. Representative concentrating arrays have been evaluated for both near-term and advanced solar cell technology. Minimum cost of power is achieved at geometric concentration ratios in the range 2 to 6.

  7. 2-D Row-Column CMUT Arrays with an Open-Grid Support Structure

    DEFF Research Database (Denmark)

    Christiansen, Thomas Lehrmann; Dahl-Petersen, Christian; Jensen, Jørgen Arendt

    2013-01-01

    Fabrication and characterization of 64 + 64 2-D row-column addressed CMUT arrays with 250 μm element pitch and 4.4 MHz center frequency in air incorporating a new design approach is presented. The arrays are comprised of two wafer bonded, structured silicon-on-insulator wafers featuring an opengr...

  8. In-beam conversion electron spectroscopy using the SACRED array

    International Nuclear Information System (INIS)

    Jones, P.M.; Cann, K.J.; Cocks, J.F.C.; Jones, G.D.; Julin, R.; Schulze, B.; Smith, J.F.; Wilson, A.N.

    1997-01-01

    Conversion electron studies of medium-heavy to heavy nuclear mass systems are important where the internal conversion process begins to dominate over gamma-ray emission. The use of a segmented detector array sensitive to conversion electrons has been used to study multiple conversion electron cascades from nuclear transitions. The application of the silicon array for conversion electron detection (SACRED) for in-beam measurements has successfully been implemented. (orig.). With 2 figs

  9. A new detector array for charged particle spectroscopy

    CERN Document Server

    Cowin, R L; Chappell, S P G; Clarke, N M; Freer, M; Fulton, B R; Cunningham, R A; Curtis, N; Dillon, G; Lilley, J; Jones, C D; Lee, P; Rae, W D M

    1999-01-01

    A compact and highly segmented detector array consisting of 44 gas-silicon-caesium iodide, position sensitive, particle identification detector telescopes and up to 10 position-sensitive, silicon strip detectors has been constructed for the study of light-ion-heavy-ion reactions including cluster break-up in the energy range 5-15 MeV/nucleon. The detectors are housed in a purpose built vacuum chamber. The telescopes are placed in fixed positions, covering the forward hemisphere from 3 to 30 deg. in the laboratory with the target placed at 535 mm from the front of the telescopes or 6-52 deg. with the target placed at 215 mm. The strip detectors are placed in any of 30 fixed positions in the forward hemisphere. For 85 MeV sup 1 sup 2 C ions the telescope energy resolution (gas plus silicon) is 345 keV with an angular resolution of 0.03 deg. . Using the gas-silicon section ions with Z up to 21 can be identified. For ions that pass through the silicon isotopic identification is achieved using the silicon-CsI comb...

  10. Electrically driven light emission from an array of Si nanoclusters

    International Nuclear Information System (INIS)

    Mazzitello, K I; Martin, H O; Aldao, C M; Roman, H E

    2004-01-01

    Charge transport and light emission properties of an array of silicon nanoclusters (NCs), sandwiched between a p-type and an n-type doped silicon crystal, are studied theoretically by assuming that electrons and holes enter from the opposite sides of the array in response to an applied electric field. The size of the NCs considered ranges from 16 nm down to 3.6 nm and their spatial distribution is optimized so that light emission, resulting from radiative recombinations, is peaked in the visible red around 1.8 eV. The light emission efficiency is limited by the carrier hopping times and is found to be in the range 2-0.5%, for fields ranging from 100 kV cm -1 to 500 kV cm -1 , respectively

  11. Dense arrays of millimeter-sized glass lenses fabricated at wafer-level.

    Science.gov (United States)

    Albero, Jorge; Perrin, Stéphane; Bargiel, Sylwester; Passilly, Nicolas; Baranski, Maciej; Gauthier-Manuel, Ludovic; Bernard, Florent; Lullin, Justine; Froehly, Luc; Krauter, Johann; Osten, Wolfgang; Gorecki, Christophe

    2015-05-04

    This paper presents the study of a fabrication technique of lenses arrays based on the reflow of glass inside cylindrical silicon cavities. Lenses whose sizes are out of the microfabrication standards are considered. In particular, the case of high fill factor arrays is discussed in detail since the proximity between lenses generates undesired effects. These effects, not experienced when lenses are sufficiently separated so that they can be considered as single items, are corrected by properly designing the silicon cavities. Complete topographic as well as optical characterizations are reported. The compatibility of materials with Micro-Opto-Electromechanical Systems (MOEMS) integration processes makes this technology attractive for the miniaturization of inspection systems, especially those devoted to imaging.

  12. Fabrication and Analysis of Tapered Tip Silicon Microneedles for MEMS based Drug Delivery System

    Directory of Open Access Journals (Sweden)

    Muhammad Waseem Ashraf

    2010-11-01

    Full Text Available In this paper, a novel design of transdermal drug delivery (TDD system is presented. The proposed system consists of controlled electronic circuit and microelectromechanical system (MEMS based devices like microneedles, micropump, flow sensor, and blood pressure sensor. The aim of this project is to develop a system that can eliminate the limitations associated with oral therapy. In this phase tapered tip silicon microneedles have been fabricated using inductively coupled plasma (ICP etching technology. Using ANSYS, simulation of microneedles has been conducted before the fabrication process to test the design suitability for TDD. More over multifield analysis of reservoir integrated with microneedle array using piezoelectric actuator has also been performed. The effects of frequency and voltage on actuator and fluid flow rate through 6×6 microneedle array have been investigated. This work provides envisage data to design suitable devices for TDD.

  13. Study of Bulk and Surface States in Porous Silicon

    National Research Council Canada - National Science Library

    Weisz, Zvi

    2000-01-01

    In this final report we summarize our findings on the study of Porous Silicon (PSi). We synthesized a variety of PSi films ranging from mesostructures to arrays of nanoparticles of the order of 2nm...

  14. Effects of carbon nanotube arrays on nucleate pool boiling

    OpenAIRE

    Ujereh, Sebastine; Fisher, Timothy; Mudawar, Issam

    2007-01-01

    Experiments were performed to assess the impact coating silicon and copper substrates with nanotubes (CNTs) have on pool boiling performance. Different CNT array densities and area coverages were tested on 1.27 1.27 mm2 samples in FC-72. The CNT preparation techniques used provided strong adherence of CNTs to both substrate materials. Very small contact angle enabled deep penetration of FC-72 liquid inside surface cavities of smooth uncoated silicon surfaces, requiring unusually high surface...

  15. Screen printed thick film based pMUT arrays

    DEFF Research Database (Denmark)

    Hedegaard, Tobias; Pedersen, T; Thomsen, Erik Vilain

    2008-01-01

    This article reports on the fabrication and characterization of lambda-pitched piezoelectric micromachined ultrasound transducer (pMUT) arrays fabricated using a unique process combining conventional silicon technology and low cost screen printing of thick film PZT. The pMUTs are designed as 8...

  16. Intermediate Bandgap Solar Cells From Nanostructured Silicon

    Energy Technology Data Exchange (ETDEWEB)

    Black, Marcie [Bandgap Engineering, Lincoln, MA (United States)

    2014-10-30

    This project aimed to demonstrate increased electronic coupling in silicon nanostructures relative to bulk silicon for the purpose of making high efficiency intermediate bandgap solar cells using silicon. To this end, we formed nanowires with controlled crystallographic orientation, small diameter, <111> sidewall faceting, and passivated surfaces to modify the electronic band structure in silicon by breaking down the symmetry of the crystal lattice. We grew and tested these silicon nanowires with <110>-growth axes, which is an orientation that should produce the coupling enhancement.

  17. Silicon nanowires enhanced proliferation and neuronal differentiation of neural stem cell with vertically surface microenvironment.

    Science.gov (United States)

    Yan, Qiuting; Fang, Lipao; Wei, Jiyu; Xiao, Guipeng; Lv, Meihong; Ma, Quanhong; Liu, Chunfeng; Wang, Wang

    2017-09-01

    Owing to its biocompatibility, noncytotoxicity, biodegradability and three-dimensional structure, vertically silicon nanowires (SiNWs) arrays are a promising scaffold material for tissue engineering, regenerative medicine and relevant medical applications. Recently, its osteogenic differentiation effects, reorganization of cytoskeleton and regulation of the fate on stem cells have been demonstrated. However, it still remains unknown whether SiNWs arrays could affect the proliferation and neuronal differentiation of neural stem cells (NSCs) or not. In the present study, we have employed vertically aligned SiNWs arrays as culture systems for NSCs and proved that the scaffold material could promote the proliferation and neuronal differentiation of NSCs while maintaining excellent cell viability and stemness. Immunofluorescence imaging analysis, Western blot and RT-PCR results reveal that NSCs proliferation and neuronal differentiation efficiency on SiNWs arrays are significant greater than that on silicon wafers. These results implicate SiNWs arrays could offer a powerful platform for NSCs research and NSCs-based therapy in the field of neural tissue engineering.

  18. Improved piercing of microneedle arrays in dermatomed human skin by an impact insertion method

    NARCIS (Netherlands)

    Verbaan, F.J.; Bal, S.M.; Berg, van den D.J.; Dijksman, J.A.; Hecke, van M.; Verpoorten, H.; Berg, van den A.; Luttge, R.; Bouwstra, J.A.

    2008-01-01

    An electrical applicator was designed, which can pierce short microneedles into the skin with a predefined velocity. Three different shapes of microneedles were used, namely 300 µm assembled hollow metal microneedle arrays, 300 µm solid metal microneedle arrays and 245 µm hollow silicon microneedle

  19. The design and investigation of hybrid ferromagnetic/silicon spin electronic devices

    International Nuclear Information System (INIS)

    Pugh, D.I.

    2001-01-01

    The focus of this study concerns the design and investigation of ferromagnetic/silicon hybrid spin electronic devices as part of a wider project to design a novel spin valve transistor. The key issue to obtain a room temperature spin electronic device is the electrical injection of a spin polarised current from a ferromagnetic contact into a semiconductor. Despite many attempts concentrating on GaAs and InAs only small (< 1%) effects have been observed, making it difficult to confirm spin injection. Lateral devices were designed and fabricated using standard device fabrication procedures to produce arrays of Co/Si/So junctions. Subsequent designs aimed to reduce the number of junctions and improve device isolation. Evidence for spin dependent MR of up to 0.56% was observed in Co/p-Si/Co junctions with silicon gaps up to 16 μm in length. The maximum MR was observed when the first Co/Si Schottky barrier was reverse biased forming a high resistance interface. Vertical devices were designed in an attempt to eliminate any alternative current paths by using a well defined, 1 μm thick silicon membrane. Despite attempts to include oxide barriers, no spin dependent MR was observed in these devices. However, a novel vertical silicon based design has been made which should facilitate further advanced studies of spin injection and transport. The spin diffusion length in n-type silicon has been calculated as a function of doping concentration and temperature by considering the spin relaxation mechanisms in the semiconductor. Discussion has been made concerning p-type silicon and comparisons made with GaAs, indicating that n-Si should show longer spin diffusion lengths. The key design criteria for designing room temperature spin electronic devices have been highlighted. These include the use of a high leakage Schottky barrier or tunnel barrier between the ferromagnet and p-Si and a contact to the silicon to enable appropriate biasing to each FM/Si interface. (author)

  20. Passivating electron contact based on highly crystalline nanostructured silicon oxide layers for silicon solar cells

    Czech Academy of Sciences Publication Activity Database

    Stuckelberger, J.; Nogay, G.; Wyss, P.; Jeangros, Q.; Allebe, Ch.; Debrot, F.; Niquille, X.; Ledinský, Martin; Fejfar, Antonín; Despeisse, M.; Haug, F.J.; Löper, P.; Ballif, C.

    2016-01-01

    Roč. 158, Dec (2016), s. 2-10 ISSN 0927-0248 R&D Projects: GA MŠk LM2015087 Institutional support: RVO:68378271 Keywords : surface passivation * passivating contact * nanostructure * silicon oxide * nanocrystalline * microcrystalline * poly-silicon * crystallization * Raman * transmission line measurement Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 4.784, year: 2016

  1. Tailoring the optical constants in single-crystal silicon with embedded silver nanostructures for advanced silicon photonics applications

    International Nuclear Information System (INIS)

    Akhter, Perveen; Huang, Mengbing; Spratt, William; Kadakia, Nirag; Amir, Faisal

    2015-01-01

    Plasmonic effects associated with metal nanostructures are expected to hold the key to tailoring light emission/propagation and harvesting solar energy in materials including single crystal silicon which remains the backbone in the microelectronics and photovoltaics industries but unfortunately, lacks many functionalities needed for construction of advanced photonic and optoelectronics devices. Currently, silicon plasmonic structures are practically possible only in the configuration with metal nanoparticles or thin film arrays on a silicon surface. This does not enable one to exploit the full potential of plasmonics for optical engineering in silicon, because the plasmonic effects are dominant over a length of ∼50 nm, and the active device region typically lies below the surface much beyond this range. Here, we report on a novel method for the formation of silver nanoparticles embedded within a silicon crystal through metal gettering from a silver thin film deposited at the surface to nanocavities within the Si created by hydrogen ion implantation. The refractive index of the Ag-nanostructured layer is found to be 3–10% lower or higher than that of silicon for wavelengths below or beyond ∼815–900 nm, respectively. Around this wavelength range, the optical extinction values increase by a factor of 10–100 as opposed to the pure silicon case. Increasing the amount of gettered silver leads to an increased extinction as well as a redshift in wavelength position for the resonance. This resonance is attributed to the surface plasmon excitation of the resultant silver nanoparticles in silicon. Additionally, we show that the profiles for optical constants in silicon can be tailored by varying the position and number of nanocavity layers. Such silicon crystals with embedded metal nanostructures would offer novel functional base structures for applications in silicon photonics, optoelectronics, photovoltaics, and plasmonics

  2. Low cost silicon solar array project silicon materials task: Establishment of the feasibility of a process capable of low-cost, high volume production of silane (step 1) and the pyrolysis of silane to semiconductor-grade silicon (step 2)

    Science.gov (United States)

    Breneman, W. C.; Cheung, H.; Farrier, E. G.; Morihara, H.

    1977-01-01

    A quartz fluid bed reactor capable of operating at temperatures of up to 1000 C was designed, constructed, and successfully operated. During a 30 minute experiment, silane was decomposed within the reactor with no pyrolysis occurring on the reactor wall or on the gas injection system. A hammer mill/roller-crusher system appeared to be the most practical method for producing seed material from bulk silicon. No measurable impurities were detected in the silicon powder produced by the free space reactor, using the cathode layer emission spectroscopic technique. Impurity concentration followed by emission spectroscopic examination of the residue indicated a total impurity level of 2 micrograms/gram. A pellet cast from this powder had an electrical resistivity of 35 to 45 ohm-cm and P-type conductivity.

  3. Enhancing the Efficiency of Silicon-Based Solar Cells by the Piezo-Phototronic Effect.

    Science.gov (United States)

    Zhu, Laipan; Wang, Longfei; Pan, Caofeng; Chen, Libo; Xue, Fei; Chen, Baodong; Yang, Leijing; Su, Li; Wang, Zhong Lin

    2017-02-28

    Although there are numerous approaches for fabricating solar cells, the silicon-based photovoltaics are still the most widely used in industry and around the world. A small increase in the efficiency of silicon-based solar cells has a huge economic impact and practical importance. We fabricate a silicon-based nanoheterostructure (p + -Si/p-Si/n + -Si (and n-Si)/n-ZnO nanowire (NW) array) photovoltaic device and demonstrate the enhanced device performance through significantly enhanced light absorption by NW array and effective charge carrier separation by the piezo-phototronic effect. The strain-induced piezoelectric polarization charges created at n-doped Si-ZnO interfaces can effectively modulate the corresponding band structure and electron gas trapped in the n + -Si/n-ZnO NW nanoheterostructure and thus enhance the transport process of local charge carriers. The efficiency of the solar cell was improved from 8.97% to 9.51% by simply applying a static compress strain. This study indicates that the piezo-phototronic effect can enhance the performance of a large-scale silicon-based solar cell, with great potential for industrial applications.

  4. Silicon nanowire transistors

    CERN Document Server

    Bindal, Ahmet

    2016-01-01

    This book describes the n and p-channel Silicon Nanowire Transistor (SNT) designs with single and dual-work functions, emphasizing low static and dynamic power consumption. The authors describe a process flow for fabrication and generate SPICE models for building various digital and analog circuits. These include an SRAM, a baseband spread spectrum transmitter, a neuron cell and a Field Programmable Gate Array (FPGA) platform in the digital domain, as well as high bandwidth single-stage and operational amplifiers, RF communication circuits in the analog domain, in order to show this technology’s true potential for the next generation VLSI. Describes Silicon Nanowire (SNW) Transistors, as vertically constructed MOS n and p-channel transistors, with low static and dynamic power consumption and small layout footprint; Targets System-on-Chip (SoC) design, supporting very high transistor count (ULSI), minimal power consumption requiring inexpensive substrates for packaging; Enables fabrication of different types...

  5. Infrared detectors and arrays; Proceedings of the Meeting, Orlando, FL, Apr. 6, 7, 1988

    International Nuclear Information System (INIS)

    Dereniak, E.L.

    1988-01-01

    The papers contained in this volume provide an overview of recent advances in theoretical and experimental research related to IR detector materials and arrays. The major subject areas covered include IR Schottky barrier silicide arrays, HdCdTe developments, SPRITE technology, superlattice or bandgap-engineered devices, extrinsic silicon technology, indium antimonide technology, and pyroelectric arrays. Papers are presented on time division multiplexed time delay integration, spatial noise in staring IR focal plane arrays, pyroelectrics in a harsh environment, and testing of focal plane arrays

  6. Improved piercing of microneedle arrays in dermatomed human skin by an impact insertion method

    NARCIS (Netherlands)

    Verbaan, F.J.; Bal, S.M.; van den Berg, D.J.; Dijksman, J.A.; van Hecke, M.; Verpoorten, H.; van den Berg, Albert; Lüttge, Regina; Bouwstra, J.A.

    2008-01-01

    An electrical applicator was designed, which can pierce short microneedles into the skin with a predefined velocity. Three different shapes of microneedles were used, namely 300 mu m assembled hollow metal microneedle arrays, 300 mu m solid metal microneedle arrays and 245 mu m hollow silicon

  7. Structural anomalies induced by the metal deposition methods in 2D silver nanoparticle arrays prepared by nanosphere lithography

    Energy Technology Data Exchange (ETDEWEB)

    Huang, Shengli, E-mail: huangsl@xmu.edu.cn [Fujian Provincial Key Lab of Semiconductors and Applications, Department of Physics, Xiamen University, Xiamen, Fujian 361005 (China); State Key Lab of Silicon Materials, Zhejiang University, Hangzhou 310027 (China); Yang, Qianqian [Fujian Provincial Key Lab of Semiconductors and Applications, Department of Physics, Xiamen University, Xiamen, Fujian 361005 (China); State Key Lab of Silicon Materials, Zhejiang University, Hangzhou 310027 (China); Zhang, Chunjing; Kong, Lingqi; Li, Shuping; Kang, Junyong [Fujian Provincial Key Lab of Semiconductors and Applications, Department of Physics, Xiamen University, Xiamen, Fujian 361005 (China)

    2013-06-01

    Silver nanoparticle arrays with 2-dimensional hexagonal arrangement were fabricated on the silicon substrates by nanosphere lithography. The silver film was deposited either by thermal evaporation or by magnetron sputtering under different conditions. The nanostructures of the achieved sphere template and the array units were characterized by scanning electron microscopy and atomic force microscopy, and were found to be anomalous under different deposition parameters. Comparative study indicated that the formation of the various 2-dimensional silver nanoparticle array structures was dominated by the thermal energy (temperature), kinetic energy and deposition direction of the deposited metal atoms as well as the size and nanocurvature of the colloidal particles and the metal clusters. - Highlights: • Silver nanoparticle arrays with different nanostructures on silicon substrates. • Various deposition parameters in arrays formation systematically examined. • Possible mechanisms and optimization of nanostructures formation addressed.

  8. Vertically etched silicon nano-rods as a sensitive electron detector

    International Nuclear Information System (INIS)

    Hajmirzaheydarali, M; Akbari, M; Soleimani-Amiri, S; Sadeghipari, M; Shahsafi, A; Akhavan Farahani, A; Mohajerzadeh, S

    2015-01-01

    We have used vertically etched silicon nano-rods to realize electron detectors suitable for scanning electron microscopes. The results of deep etching of silicon nano-structures are presented to achieve highly ordered arrays of nano-rods. The response of the electron detector to energy of the primary electron beam and the effects of various sizes and materials has been investigated, indicating its high sensitivity to secondary and back-scattered electrons. The miniaturized structure of this electron detector allows it to be placed in the vicinity of the specimen to improve the resolution and contrast. This detector collects electrons and converts the electron current to voltage directly by means of n-doped silicon nano-rods on a p-type silicon substrate. Silicon nano-rods enhance the surface-to-volume ratio of the detector as well as improving the yield of electron detection. The use of nano-structures and silicon nanowires as an electron detector has led to higher sensitivities than with micro-structures. (paper)

  9. Diode temperature sensor array for measuring and controlling micro scale surface temperature

    International Nuclear Information System (INIS)

    Han, Il Young; Kim, Sung Jin

    2004-01-01

    The needs of micro scale thermal detecting technique are increasing in biology and chemical industry. For example, thermal finger print, Micro PCR(Polymer Chain Reaction), TAS and so on. To satisfy these needs, we developed a DTSA(Diode Temperature Sensor Array) for detecting and controlling the temperature on small surface. The DTSA is fabricated by using VLSI technique. It consists of 32 array of diodes(1,024 diodes) for temperature detection and 8 heaters for temperature control on a 8mm surface area. The working principle of temperature detection is that the forward voltage drop across a silicon diode is approximately proportional to the inverse of the absolute temperature of diode. And eight heaters (1K) made of poly-silicon are added onto a silicon wafer and controlled individually to maintain a uniform temperature distribution across the DTSA. Flip chip packaging used for easy connection of the DTSA. The circuitry for scanning and controlling DTSA are also developed

  10. Synthesis Study of a 6-Element Non-Uniform Array with Tilted Elements for CLARREO Project

    Science.gov (United States)

    Jamnejad, Vahraz; Hoorfar, Ahmad

    2012-01-01

    This paper presents the results of a preliminary study of the gain/pattern properties of a 6-element Radio Occultation (RO) array for the proposed CLARREO (Climate Absolute Radiance and Refractivity Observatory (CLARREO) Project. CLARREO is one of the 4 highest priority missions recommended in the National Research Council Earth Science Decadal Survey.

  11. Waferscale Electrostatic Quadrupole Array for Multiple Ion Beam Manipulation

    OpenAIRE

    Vinayakumar, K. B.; Persaud, A.; Seidl, P. A.; Ji, Q.; Waldron, W. L.; Schenkel, T.; Ardanuc, S.; Lal, A.

    2018-01-01

    We report on the first through-wafer silicon-based Electrostatic Quadrupole Array (ESQA) to focus high energy ion beams. This device is a key enabler for a wafer based accelerator architecture that lends itself to orders-of-magnitude reduction in cost, volume and weight of charged particle accelerators. ESQs are a key building block in developing compact Multiple Electrostatic Quadrupole Array Linear Accelerator (MEQALAC) [1]. In a MEQALAC electrostatic forces are used to focus ions, and elec...

  12. 3D silicone rubber interfaces for individually tailored implants.

    Science.gov (United States)

    Stieghorst, Jan; Bondarenkova, Alexandra; Burblies, Niklas; Behrens, Peter; Doll, Theodor

    2015-01-01

    For the fabrication of customized silicone rubber based implants, e.g. cochlear implants or electrocortical grid arrays, it is required to develop high speed curing systems, which vulcanize the silicone rubber before it runs due to a heating related viscosity drop. Therefore, we present an infrared radiation based cross-linking approach for the 3D-printing of silicone rubber bulk and carbon nanotube based silicone rubber electrode materials. Composite materials were cured in less than 120 s and material interfaces were evaluated with scanning electron microscopy. Furthermore, curing related changes in the mechanical and cell-biological behaviour were investigated with tensile and WST-1 cell biocompatibility tests. The infrared absorption properties of the silicone rubber materials were analysed with fourier transform infrared spectroscopy in transmission and attenuated total reflection mode. The heat flux was calculated by using the FTIR data, emissivity data from the infrared source manufacturer and the geometrical view factor of the system.

  13. Large-scale membrane transfer process: its application to single-crystal-silicon continuous membrane deformable mirror

    International Nuclear Information System (INIS)

    Wu, Tong; Sasaki, Takashi; Hane, Kazuhiro; Akiyama, Masayuki

    2013-01-01

    This paper describes a large-scale membrane transfer process developed for the construction of large-scale membrane devices via the transfer of continuous single-crystal-silicon membranes from one substrate to another. This technique is applied for fabricating a large stroke deformable mirror. A bimorph spring array is used to generate a large air gap between the mirror membrane and the electrode. A 1.9 mm × 1.9 mm × 2 µm single-crystal-silicon membrane is successfully transferred to the electrode substrate by Au–Si eutectic bonding and the subsequent all-dry release process. This process provides an effective approach for transferring a free-standing large continuous single-crystal-silicon to a flexible suspension spring array with a large air gap. (paper)

  14. Nanopillar arrays on semiconductor membranes as electron emission amplifiers.

    Science.gov (United States)

    Qin, Hua; Kim, Hyun-Seok; Blick, Robert H

    2008-03-05

    A new transmission-type electron multiplier was fabricated from silicon-on-insulator (SOI) material by integrating an array of one-dimensional (1D) silicon nanopillars onto a two-dimensional (2D) silicon membrane. Primary electrons are injected into the nanopillar-membrane (NPM) system from the flat surface of the membrane, while electron emission from the nanopillars is probed by an anode. The secondary electron yield (SEY) from the nanopillars in the current device is found to be about 1.8 times that of the plain silicon membrane. This gain in electron number is slightly enhanced by the electric field applied from the anode. Further optimization of the dimensions of the NPM and an application of field emission promise an even higher gain for detector applications and allow for probing of electronic/mechanical excitations in an NPM system stimulated by incident particles or radiation.

  15. Nanostructured silicon anodes for lithium ion rechargeable batteries.

    Science.gov (United States)

    Teki, Ranganath; Datta, Moni K; Krishnan, Rahul; Parker, Thomas C; Lu, Toh-Ming; Kumta, Prashant N; Koratkar, Nikhil

    2009-10-01

    Rechargeable lithium ion batteries are integral to today's information-rich, mobile society. Currently they are one of the most popular types of battery used in portable electronics because of their high energy density and flexible design. Despite their increasing use at the present time, there is great continued commercial interest in developing new and improved electrode materials for lithium ion batteries that would lead to dramatically higher energy capacity and longer cycle life. Silicon is one of the most promising anode materials because it has the highest known theoretical charge capacity and is the second most abundant element on earth. However, silicon anodes have limited applications because of the huge volume change associated with the insertion and extraction of lithium. This causes cracking and pulverization of the anode, which leads to a loss of electrical contact and eventual fading of capacity. Nanostructured silicon anodes, as compared to the previously tested silicon film anodes, can help overcome the above issues. As arrays of silicon nanowires or nanorods, which help accommodate the volume changes, or as nanoscale compliant layers, which increase the stress resilience of silicon films, nanoengineered silicon anodes show potential to enable a new generation of lithium ion batteries with significantly higher reversible charge capacity and longer cycle life.

  16. Sensorless PV Array Diagnostic Method for Residential PV Systems

    DEFF Research Database (Denmark)

    Sera, Dezso; Spataru, Sergiu; Mathe, Laszlo

    2011-01-01

    This work proposes a temperature and irradiance sensorless diagnostic method suitable for small residential PV installations, focusing on detection of partial shadows. The method works by detection of failures in crystalline silicone PV arrays by concomitant monitoring of some of their key...

  17. Science with the ASTRI mini-array for the Cherenkov Telescope Array: blazars and fundamental physics

    Science.gov (United States)

    Bonnoli, Giacomo; Tavecchio, Fabrizio; Giuliani, Andrea; Bigongiari, Ciro; Di Pierro, Federico; Stamerra, Antonio; Pareschi, Giovanni; Vercellone, Stefano; ASTRI Collaboration; CTA Consortium

    2016-05-01

    ASTRI (“Astronomia a Specchi con Tecnologia Replicante Italiana”) is a flagship project of the Italian Ministry of Research (MIUR), devoted to the realization, operation and scientific validation of an end-to-end prototype for the Small Size Telescope (SST) envisaged to become part of the Cherenkov Telescope Array (CTA). The ASTRI SST-2M telescope prototype is characterized by a dual mirror, Schwarzschild-Couder optical design and a compact camera based on silicon photo-multipliers. It will be sensitive to multi-TeV very high energy (VHE) gamma rays up to 100 TeV, with a PSF ~ 6’ and a wide (9.6°) unaberrated optical field of view. Right after validation of the design in single-dish observations at the Serra La Nave site (Sicily, Italy) during 2015, the ASTRI collaboration will be able to start deployment, at the final CTA southern site, of the ASTRI mini-array, proposed to constitute the very first CTA precursor. Counting 9 ASTRI SST-2M telescopes, the ASTRI mini-array will overtake current IACT systems in differential sensitivity above 5 TeV, thus allowing unprecedented observations of known and predicted bright TeV emitters in this band, including some extragalactic sources such as extreme high-peaked BL Lacs with hard spectra. We exploited the ASTRI scientific simulator ASTRIsim in order to understand the feasibility of observations tackling blazar and cosmic ray physics, including discrimination of hadronic and leptonic scenarios for the VHE emission from BL Lac relativistic jets and indirect measurements of the intergalactic magnetic field and of the extragalactic background light. We selected favorable targets, outlining observation modes, exposure times, multi-wavelength coverage needed and the results expected. Moreover, the perspectives for observation of effects due to the existence of axion-like particles or to Lorentz invariance violations have been investigated.

  18. Strain fields around dislocation arrays in a Σ9 silicon bicrystal measured by scanning transmission electron microscopy

    Science.gov (United States)

    Couillard, Martin; Radtke, Guillaume; Botton, Gianluigi A.

    2013-04-01

    Strain fields around grain boundary dislocations are measured by applying geometric phase analysis on atomic resolution images obtained from multiple fast acquisitions in scanning transmission electron microscopy. Maps of lattice distortions in silicon introduced by an array of pure edge dislocations located at a Σ9(122) grain boundary are compared with the predictions from isotropic elastic theory, and the atomic structure of dislocation cores is deduced from images displaying all the atomic columns. For strain measurements, reducing the acquisition time is found to significantly decrease the effects of instabilities on the high-resolution images. Contributions from scanning artefacts are also diminished by summing multiple images following a cross-correlation alignment procedure. Combined with the sub-Ångström resolution obtained with an aberration corrector, and the stable dedicated microscope's environment, therapid acquisition method provides the measurements of atomic displacements with accuracy below 10 pm. Finally, the advantages of combining strain measurements with the collection of various analytical signals in a scanning transmission electron microscope are discussed.

  19. Backshort-Under-Grid arrays for infrared astronomy

    Science.gov (United States)

    Allen, C. A.; Benford, D. J.; Chervenak, J. A.; Chuss, D. T.; Miller, T. M.; Moseley, S. H.; Staguhn, J. G.; Wollack, E. J.

    2006-04-01

    We are developing a kilopixel, filled bolometer array for space infrared astronomy. The array consists of three individual components, to be merged into a single, working unit; (1) a transition edge sensor bolometer array, operating in the milliKelvin regime, (2) a quarter-wave backshort grid, and (3) superconducting quantum interference device multiplexer readout. The detector array is designed as a filled, square grid of suspended, silicon bolometers with superconducting sensors. The backshort arrays are fabricated separately and will be positioned in the cavities created behind each detector during fabrication. The grids have a unique interlocking feature machined into the walls for positioning and mechanical stability. The spacing of the backshort beneath the detector grid can be set from ˜30 300 μm, by independently adjusting two process parameters during fabrication. The ultimate goal is to develop a large-format array architecture with background-limited sensitivity, suitable for a wide range of wavelengths and applications, to be directly bump bonded to a multiplexer circuit. We have produced prototype two-dimensional arrays having 8×8 detector elements. We present detector design, fabrication overview, and assembly technologies.

  20. Comparison of Thermal Detector Arrays for Off-Axis THz Holography and Real-Time THz Imaging

    Directory of Open Access Journals (Sweden)

    Erwin Hack

    2016-02-01

    Full Text Available In terahertz (THz materials science, imaging by scanning prevails when low power THz sources are used. However, the application of array detectors operating with high power THz sources is increasingly reported. We compare the imaging properties of four different array detectors that are able to record THz radiation directly. Two micro-bolometer arrays are designed for infrared imaging in the 8–14 μm wavelength range, but are based on different absorber materials (i vanadium oxide; (ii amorphous silicon; (iii a micro-bolometer array optimized for recording THz radiation based on silicon nitride; and (iv a pyroelectric array detector for THz beam profile measurements. THz wavelengths of 96.5 μm, 118.8 μm, and 393.6 μm from a powerful far infrared laser were used to assess the technical performance in terms of signal to noise ratio, detector response and detectivity. The usefulness of the detectors for beam profiling and digital holography is assessed. Finally, the potential and limitation for real-time digital holography are discussed.

  1. Comparison of Thermal Detector Arrays for Off-Axis THz Holography and Real-Time THz Imaging.

    Science.gov (United States)

    Hack, Erwin; Valzania, Lorenzo; Gäumann, Gregory; Shalaby, Mostafa; Hauri, Christoph P; Zolliker, Peter

    2016-02-06

    In terahertz (THz) materials science, imaging by scanning prevails when low power THz sources are used. However, the application of array detectors operating with high power THz sources is increasingly reported. We compare the imaging properties of four different array detectors that are able to record THz radiation directly. Two micro-bolometer arrays are designed for infrared imaging in the 8-14 μm wavelength range, but are based on different absorber materials (i) vanadium oxide; (ii) amorphous silicon; (iii) a micro-bolometer array optimized for recording THz radiation based on silicon nitride; and (iv) a pyroelectric array detector for THz beam profile measurements. THz wavelengths of 96.5 μm, 118.8 μm, and 393.6 μm from a powerful far infrared laser were used to assess the technical performance in terms of signal to noise ratio, detector response and detectivity. The usefulness of the detectors for beam profiling and digital holography is assessed. Finally, the potential and limitation for real-time digital holography are discussed.

  2. Ordered silicon nanostructures for silicon-based photonics devices

    Czech Academy of Sciences Publication Activity Database

    Fojtík, A.; Valenta, J.; Pelant, Ivan; Kálal, M.; Fiala, P.

    2007-01-01

    Roč. 5, Suppl. (2007), S250-S253 ISSN 1671-7694 R&D Projects: GA AV ČR IAA1010316 Grant - others:GA MŠk(CZ) ME 933 Institutional research plan: CEZ:AV0Z10100521 Keywords : nanocrystals * silicon * self-assembled monolayers Subject RIV: BM - Solid Matter Physics ; Magnetism

  3. Silicon Nanowires for Solar Thermal Energy Harvesting: an Experimental Evaluation on the Trade-off Effects of the Spectral Optical Properties.

    Science.gov (United States)

    Sekone, Abdoul Karim; Chen, Yu-Bin; Lu, Ming-Chang; Chen, Wen-Kai; Liu, Chia-An; Lee, Ming-Tsang

    2016-12-01

    Silicon nanowire possesses great potential as the material for renewable energy harvesting and conversion. The significantly reduced spectral reflectivity of silicon nanowire to visible light makes it even more attractive in solar energy applications. However, the benefit of its use for solar thermal energy harvesting remains to be investigated and has so far not been clearly reported. The purpose of this study is to provide practical information and insight into the performance of silicon nanowires in solar thermal energy conversion systems. Spectral hemispherical reflectivity and transmissivity of the black silicon nanowire array on silicon wafer substrate were measured. It was observed that the reflectivity is lower in the visible range but higher in the infrared range compared to the plain silicon wafer. A drying experiment and a theoretical calculation were carried out to directly evaluate the effects of the trade-off between scattering properties at different wavelengths. It is clearly seen that silicon nanowires can improve the solar thermal energy harnessing. The results showed that a 17.8 % increase in the harvest and utilization of solar thermal energy could be achieved using a silicon nanowire array on silicon substrate as compared to that obtained with a plain silicon wafer.

  4. Impact of Improved Heat Sinking of an X-Ray Calorimeter Array on Crosstalk, Noise, and Background Events

    Science.gov (United States)

    Kilbourne, C. A.; Adams, J. S.; Brekosky, R. P.; Chervenak, J. A.; Chiao, M. P.; Kelley, R. L.; Kelly, D. P.; Porter, F. S.

    2011-01-01

    The x-ray calorimeter array of the Soft X-ray Spectrometer (SXS) of the Astro-H satellite will incorporate a silicon thermistor array produced during the development of the X-Ray Spectrometer (XRS) of the Suzaku satellite. On XRS, inadequate heat sinking of the array led to several non-ideal effects. The thermal crosstalk, while too small to be confused with x-ray signals, nonetheless contributed a noise term that could be seen as a degradation in energy resolution at high flux. When energy was deposited in the silicon frame around the active elements of the array, such as by a cosmic ray, the resulting pulse in the temperature of the frame resulted in coincident signal pulses on most of the pixels. In orbit, the resolution was found to depend on the particle background rate. In order to minimize these effects on SXS, heat-sinking gold was applied to areas on the front and back of the array die, which was thermally anchored to the gold of its fanout board via gold wire bonds. The thermal conductance from the silicon chip to the fanout board was improved over that of XRS by an order of magnitude. This change was sufficient for essentially eliminating frame events and allowing high-resolution to be attained at much higher counting rates. We will present the improved performance, the measured crosstalk, and the results of the thermal characterization of such arrays.

  5. Ordered arrays of embedded Ga nanoparticles on patterned silicon substrates

    International Nuclear Information System (INIS)

    Bollani, M; Bietti, S; Sanguinetti, S; Frigeri, C; Chrastina, D; Reyes, K; Smereka, P; Millunchick, J M; Vanacore, G M; Tagliaferri, A; Burghammer, M

    2014-01-01

    We fabricate site-controlled, ordered arrays of embedded Ga nanoparticles on Si, using a combination of substrate patterning and molecular-beam epitaxial growth. The fabrication process consists of two steps. Ga droplets are initially nucleated in an ordered array of inverted pyramidal pits, and then partially crystallized by exposure to an As flux, which promotes the formation of a GaAs shell that seals the Ga nanoparticle within two semiconductor layers. The nanoparticle formation process has been investigated through a combination of extensive chemical and structural characterization and theoretical kinetic Monte Carlo simulations. (papers)

  6. Microfabricated hollow microneedle array using ICP etcher

    Science.gov (United States)

    Ji, Jing; Tay, Francis E. H.; Miao, Jianmin

    2006-04-01

    This paper presents a developed process for fabrication of hollow silicon microneedle arrays. The inner hollow hole and the fluidic reservoir are fabricated in deep reactive ion etching. The profile of outside needles is achieved by the developed fabrication process, which combined isotropic etching and anisotropic etching with inductively coupled plasma (ICP) etcher. Using the combination of SF6/O2 isotropic etching chemistry and Bosch process, the high aspect ratio 3D and high density microneedle arrays are fabricated. The generated needle external geometry can be controlled by etching variables in the isotropic and anisotropic cases.

  7. Microfabricated hollow microneedle array using ICP etcher

    International Nuclear Information System (INIS)

    Ji Jing; Tay, Francis E H; Miao Jianmin

    2006-01-01

    This paper presents a developed process for fabrication of hollow silicon microneedle arrays. The inner hollow hole and the fluidic reservoir are fabricated in deep reactive ion etching. The profile of outside needles is achieved by the developed fabrication process, which combined isotropic etching and anisotropic etching with inductively coupled plasma (ICP) etcher. Using the combination of SF 6 /O 2 isotropic etching chemistry and Bosch process, the high aspect ratio 3D and high density microneedle arrays are fabricated. The generated needle external geometry can be controlled by etching variables in the isotropic and anisotropic cases

  8. Microfabricated hollow microneedle array using ICP etcher

    Energy Technology Data Exchange (ETDEWEB)

    Ji Jing [Mechanical Engineering National University of Singapore, 119260, Singapore (Singapore); Tay, Francis E H [Mechanical Engineering National University of Singapore, 119260, Singapore (Singapore); Miao Jianmin [MicroMachines Center, School of Mechanical and Aerospace Engineering, Nanyang Technological University, 50 Nanyang Avenue, 639798 (Singapore)

    2006-04-01

    This paper presents a developed process for fabrication of hollow silicon microneedle arrays. The inner hollow hole and the fluidic reservoir are fabricated in deep reactive ion etching. The profile of outside needles is achieved by the developed fabrication process, which combined isotropic etching and anisotropic etching with inductively coupled plasma (ICP) etcher. Using the combination of SF{sub 6}/O{sub 2} isotropic etching chemistry and Bosch process, the high aspect ratio 3D and high density microneedle arrays are fabricated. The generated needle external geometry can be controlled by etching variables in the isotropic and anisotropic cases.

  9. Effect of electroless etching parameters on the growth and reflection properties of silicon nanowires

    International Nuclear Information System (INIS)

    Ozdemir, Baris; Unalan, Husnu Emrah; Kulakci, Mustafa; Turan, Rasit

    2011-01-01

    Vertically aligned silicon nanowire (Si NW) arrays have been fabricated over large areas using an electroless etching (EE) method, which involves etching of silicon wafers in a silver nitrate and hydrofluoric acid based solution. A detailed parametric study determining the relationship between nanowire morphology and time, temperature, solution concentration and starting wafer characteristics (doping type, resistivity, crystallographic orientation) is presented. The as-fabricated Si NW arrays were analyzed by field emission scanning electron microscope (FE-SEM) and a linear dependency of nanowire length to both temperature and time was obtained and the change in the growth rate of Si NWs at increased etching durations was shown. Furthermore, the effects of EE parameters on the optical reflectivity of the Si NWs were investigated in this study. Reflectivity measurements show that the 42.8% reflectivity of the starting silicon wafer drops to 1.3%, recorded for 10 μm long Si NW arrays. The remarkable decrease in optical reflectivity indicates that Si NWs have a great potential to be utilized in radial or coaxial p-n heterojunction solar cells that could provide orthogonal photon absorption and enhanced carrier collection.

  10. Effect of electroless etching parameters on the growth and reflection properties of silicon nanowires.

    Science.gov (United States)

    Ozdemir, Baris; Kulakci, Mustafa; Turan, Rasit; Unalan, Husnu Emrah

    2011-04-15

    Vertically aligned silicon nanowire (Si NW) arrays have been fabricated over large areas using an electroless etching (EE) method, which involves etching of silicon wafers in a silver nitrate and hydrofluoric acid based solution. A detailed parametric study determining the relationship between nanowire morphology and time, temperature, solution concentration and starting wafer characteristics (doping type, resistivity, crystallographic orientation) is presented. The as-fabricated Si NW arrays were analyzed by field emission scanning electron microscope (FE-SEM) and a linear dependency of nanowire length to both temperature and time was obtained and the change in the growth rate of Si NWs at increased etching durations was shown. Furthermore, the effects of EE parameters on the optical reflectivity of the Si NWs were investigated in this study. Reflectivity measurements show that the 42.8% reflectivity of the starting silicon wafer drops to 1.3%, recorded for 10 µm long Si NW arrays. The remarkable decrease in optical reflectivity indicates that Si NWs have a great potential to be utilized in radial or coaxial p-n heterojunction solar cells that could provide orthogonal photon absorption and enhanced carrier collection.

  11. Effect of electroless etching parameters on the growth and reflection properties of silicon nanowires

    Science.gov (United States)

    Ozdemir, Baris; Kulakci, Mustafa; Turan, Rasit; Emrah Unalan, Husnu

    2011-04-01

    Vertically aligned silicon nanowire (Si NW) arrays have been fabricated over large areas using an electroless etching (EE) method, which involves etching of silicon wafers in a silver nitrate and hydrofluoric acid based solution. A detailed parametric study determining the relationship between nanowire morphology and time, temperature, solution concentration and starting wafer characteristics (doping type, resistivity, crystallographic orientation) is presented. The as-fabricated Si NW arrays were analyzed by field emission scanning electron microscope (FE-SEM) and a linear dependency of nanowire length to both temperature and time was obtained and the change in the growth rate of Si NWs at increased etching durations was shown. Furthermore, the effects of EE parameters on the optical reflectivity of the Si NWs were investigated in this study. Reflectivity measurements show that the 42.8% reflectivity of the starting silicon wafer drops to 1.3%, recorded for 10 µm long Si NW arrays. The remarkable decrease in optical reflectivity indicates that Si NWs have a great potential to be utilized in radial or coaxial p-n heterojunction solar cells that could provide orthogonal photon absorption and enhanced carrier collection.

  12. Piezoelectric Nanogenerator Using p-Type ZnO Nanowire Arrays

    KAUST Repository

    Lu, Ming-Pei; Song, Jinhui; Lu, Ming-Yen; Chen, Min-Teng; Gao, Yifan; Chen, Lih-Juann; Wang, Zhong Lin

    2009-01-01

    Using phosphorus-doped ZnO nanowire (NW) arrays grown on silicon substrate, energy conversion using the p-type ZnO NWs has been demonstrated for the first time. The p-type ZnO NWs produce positive output voltage pulses when scanned by a conductive

  13. Technology for Solar Array Production on the Moon

    Science.gov (United States)

    Landis, Geoffrey A.

    2002-01-01

    Silicon, aluminum, and glass are the primary raw materials that will be required for production of solar arrays on the moon. A process sequence is proposed for producing these materials from lunar regolith is proposed, consisting of separating the required materials from lunar rock with fluorine. Fluorosilane produced by this process is reduced to silicon; the fluorine salts are reduced to metals by reaction with metallic potassium. Fluorine is recovered from residual MgF and CaF2 by reaction with K2O. Aluminum, calcium oxide, and magnesium oxide are recovered to manufacture structural materials and glass.

  14. Realization of thermally durable close-packed 2D gold nanoparticle arrays using self-assembly and plasma etching

    International Nuclear Information System (INIS)

    Sivaraman, Sankar K; Santhanam, Venugopal

    2012-01-01

    Realization of thermally and chemically durable, ordered gold nanostructures using bottom-up self-assembly techniques are essential for applications in a wide range of areas including catalysis, energy generation, and sensing. Herein, we describe a modular process for realizing uniform arrays of gold nanoparticles, with interparticle spacings of 2 nm and above, by using RF plasma etching to remove ligands from self-assembled arrays of ligand-coated gold nanoparticles. Both nanoscale imaging and macroscale spectroscopic characterization techniques were used to determine the optimal conditions for plasma etching, namely RF power, operating pressure, duration of treatment, and type of gas. We then studied the effect of nanoparticle size, interparticle spacing, and type of substrate on the thermal durability of plasma-treated and untreated nanoparticle arrays. Plasma-treated arrays showed enhanced chemical and thermal durability, on account of the removal of ligands. To illustrate the application potential of the developed process, robust SERS (surface-enhanced Raman scattering) substrates were formed using plasma-treated arrays of silver-coated gold nanoparticles that had a silicon wafer or photopaper as the underlying support. The measured value of the average SERS enhancement factor (2 × 10 5 ) was quantitatively reproducible on both silicon and paper substrates. The silicon substrates gave quantitatively reproducible results even after thermal annealing. The paper-based SERS substrate was also used to swab and detect probe molecules deposited on a solid surface. (paper)

  15. Proceedings of the flat-plate solar array project research forum on photovoltaic metallization systems

    Energy Technology Data Exchange (ETDEWEB)

    None

    1983-11-15

    A Photovoltaic Metallization Research Forum, under the sponsorship of the Jet Propulsion Laboratory's Flat-Plate Solar Array Project and the US Department of Energy, was held March 16-18, 1983 at Pine Mountain, Georgia. The Forum consisted of five sessions, covering (1) the current status of metallization systems, (2) system design, (3) thick-film metallization, (4) advanced techniques and (5) future metallization challenges. Twenty-three papers were presented.

  16. Amorphous silicon pixel radiation detectors and associated thin film transistor electronics readout

    International Nuclear Information System (INIS)

    Perez-Mendez, V.; Cho, G.; Drewery, J.; Jing, T.; Kaplan, S.N.; Mireshghi, A.; Wildermuth, D.; Goodman, C.; Fujieda, I.

    1992-07-01

    We describe the characteristics of thin (1 μm) and thick (> 30 μm) hydrogenated amorphous silicon p-i-n diodes which are optimized for detecting and recording the spatial distribution of charged particles, x-ray, γ rays and thermal neutrons. For x-ray, γ ray, and charged particle detection we can use thin p-i-n photosensitive diode arrays coupled to evaporated layers of suitable scintillators. For thermal neutron detection we use thin (2∼5 μm) gadolinium converters on 30 μm thick a-Si:H diodes. For direct detection of minimum ionizing particles and others with high resistance to radiation damage, we use the thick p-i-n diode arrays. Diode and amorphous silicon readouts as well as polysilicon pixel amplifiers are described

  17. Fabrication of the GLAST Silicon Tracker Readout Electronics

    Energy Technology Data Exchange (ETDEWEB)

    Baldini, Luca; Brez, Alessandro; Himel, Thomas; Johnson, R.P.; Latronico, Luca; Minuti, Massimo; Nelson, David; Sadrozinski, H.F.-W.; Sgro, Carmelo; Spandre, Gloria; Sugizaki, Mutsumi; Tajima, Hiro; Cohen Tanugi, Johann; Young, Charles; Ziegler, Marcus; /Pisa U. /INFN, Pisa /SLAC /UC, Santa Cruz

    2006-03-03

    A unique electronics system has been built and tested for reading signals from the silicon-strip detectors of the Gamma-ray Large Area Space Telescope mission. The system amplifies and processes signals from 884,736 36-cm long silicon strips in a 4 x 4 array of tower modules. An aggressive mechanical design fits the readout electronics in narrow spaces between the tower modules, to minimize dead area. This design and the resulting departures from conventional electronics packaging led to several fabrication challenges and lessons learned. This paper describes the fabrication processes and how the problems peculiar to this design were overcome.

  18. Fabrication and Photovoltaic Characteristics of Coaxial Silicon Nanowire Solar Cells Prepared by Wet Chemical Etching

    Directory of Open Access Journals (Sweden)

    Chien-Wei Liu

    2012-01-01

    Full Text Available Nanostructured solar cells with coaxial p-n junction structures have strong potential to enhance the performances of the silicon-based solar cells. This study demonstrates a radial junction silicon nanowire (RJSNW solar cell that was fabricated simply and at low cost using wet chemical etching. Experimental results reveal that the reflectance of the silicon nanowires (SNWs declines as their length increases. The excellent light trapping was mainly associated with high aspect ratio of the SNW arrays. A conversion efficiency of ∼7.1% and an external quantum efficiency of ∼64.6% at 700 nm were demonstrated. Control of etching time and diffusion conditions holds great promise for the development of future RJSNW solar cells. Improving the electrode/RJSNW contact will promote the collection of carries in coaxial core-shell SNW array solar cells.

  19. Experimental investigation of laminar flow across short micro pin fin arrays

    International Nuclear Information System (INIS)

    Guo, Dongzhi; Yao, Shi-Chune; Gao, Jinsheng; Santhanam, Suresh

    2014-01-01

    The pressure drop and friction factor of gas flow across an array of circular silicon micro-pillars with different diameters fabricated by deep reactive ion etch (DRIE) process were investigated. The pitch-to-diameter ratio (1.5  <  S T /d  <  2.3) and the height-to-diameter aspect ratio (0.48  <  H/d  <  2.28) were found to affect the friction factor of the pillar array significantly. A new correlation, which considered the coupled effect of pillar spacing and aspect ratio, was proposed to predict the friction factor in a Reynolds number range of 1–100. Silicon pillars with large artificial roughness amplitudes were also fabricated, and the effect of the roughness was studied in the laminar flow region. The results demonstrated that the pressure drop and the friction factor were reduced significantly (more than 50%) for the pillar array with a large artificial roughness, which may be used to improve the cooling efficiency for the regenerator structures in micro-coolers. (paper)

  20. Towards the installation and use of an extended array for cosmic ray detection The EEE Project

    CERN Document Server

    Abbrescia, M; An, S; Antolini, R; Badala, A; Baek, Y W; Baldini Ferroli, R; Bencivenni, G; Blanco, F; Bressan, E; Chiavassa, A; Chiri,C; Cicalò, C; Cifarelli, L; Coccia, E; Coccetti, F; De Caro, A; De Gruttola, D; De Pasquale, S; D'Incecco, M; Fabbri, F L; Frolov, V; Garbini, M; Garnaccia, C; Gustavino, C; Hatzifotiadou, D; Imponente, G; Kim, J S; Kim, M M; La Rocca, P; Librizzi, F; Maggiora, A; Menghetti, H; Miozzi, S; Moro, R; Noferini, F; Pagano, P; Panareo, M; Pappalardo, G S; Petta, C; Piragino, G; Preghenella, R; Riggi, F; Romano, F; Russo, G; Sartorelli, G; Sbarra, C; Scioli, G; Selvi, M; Serci, S; Siddi, E; Wenninger, H; Williams, M C S; Zampolli, C; Zichichi, A; Zuyeuski, R

    2009-01-01

    The Extreme Energy Events (EEE) project started to use an array of cosmic ray telescopes for muon detection, distributed over the italian territory. The use of such telescopes, based on Multigap Resistive Plate Chambers (MRPC) allows the study of the local muon flux, the detection of cosmic ray showers and the search for correlations between distant showers. The project is also intended to involve high school teams in an advanced research work. The present status of the installation and the first physics results are discussed here.

  1. Towards the installation and use of an extended array for cosmic ray detection: The EEE Project

    Energy Technology Data Exchange (ETDEWEB)

    Abbrescia, M. [INFN and Department of Physics, University of Bari (Italy); Alici, A. [INFN and Department of Physics, University of Bologna (Italy); An, S. [World Laboratory, Geneva (Switzerland); Antolini, R. [INFN, Laboratori Nazionali del Gran Sasso (Italy); Badala, A. [INFN and Department of Physics and Astronomy, University of Catania (Italy); Baek, Y.W. [Department of Physics, Kangnung National University (Korea, Republic of); CERN, Geneva (Switzerland); Baldini Ferroli, R. [Museo Storico della Fisica, Centro Studi e Ricerche E.Fermi, Roma (Italy); INFN, Laboratori Nazionali di Frascati (Italy); Bencivenni, G. [INFN, Laboratori Nazionali di Frascati (Italy); Museo Storico della Fisica, Centro Studi e Ricerche E.Fermi, Roma (Italy); Blanco, F. [INFN and Department of Physics and Astronomy, University of Catania (Italy); Bressan, E. [INFN and Department of Physics, University of Bologna (Italy); Chiavassa, A. [INFN and Department of Physics, University of Torino (Italy); Chiri, C. [INFN and Department of Physics, University of Lecce (Italy); Museo Storico della Fisica, Centro Studi e Ricerche E.Fermi, Roma (Italy); Cicalo, C. [INFN and Department of Physics, University of Cagliari (Italy); Cifarelli, L. [INFN and Department of Physics, University of Bologna (Italy); Coccia, E. [INFN, Laboratori Nazionali del Gran Sasso (Italy); Coccetti, F. [Museo Storico della Fisica, Centro Studi e Ricerche E.Fermi, Roma (Italy); De Caro, A.; De Gruttola, D.; De Pasquale, S. [INFN and Department of Physics, University of Salerno (Italy); D' Incecco, M. [INFN, Laboratori Nazionali del Gran Sasso (Italy)

    2009-05-15

    The Extreme Energy Events (EEE) project started to use an array of cosmic ray telescopes for muon detection, distributed over the italian territory. The use of such telescopes, based on Multigap Resistive Plate Chambers (MRPC) allows the study of the local muon flux, the detection of cosmic ray showers and the search for correlations between distant showers. The project is also intended to involve high school teams in an advanced research work. The present status of the installation and the first physics results are discussed here.

  2. Microtextured Silicon Surfaces for Detectors, Sensors & Photovoltaics

    Energy Technology Data Exchange (ETDEWEB)

    Carey, JE; Mazur, E

    2005-05-19

    With support from this award we studied a novel silicon microtexturing process and its application in silicon-based infrared photodetectors. By irradiating the surface of a silicon wafer with intense femtosecond laser pulses in the presence of certain gases or liquids, the originally shiny, flat surface is transformed into a dark array of microstructures. The resulting microtextured surface has near-unity absorption from near-ultraviolet to infrared wavelengths well below the band gap. The high, broad absorption of microtextured silicon could enable the production of silicon-based photodiodes for use as inexpensive, room-temperature multi-spectral photodetectors. Such detectors would find use in numerous applications including environmental sensors, solar energy, and infrared imaging. The goals of this study were to learn about microtextured surfaces and then develop and test prototype silicon detectors for the visible and infrared. We were extremely successful in achieving our goals. During the first two years of this award, we learned a great deal about how microtextured surfaces form and what leads to their remarkable optical properties. We used this knowledge to build prototype detectors with high sensitivity in both the visible and in the near-infrared. We obtained room-temperature responsivities as high as 100 A/W at 1064 nm, two orders of magnitude higher than standard silicon photodiodes. For wavelengths below the band gap, we obtained responsivities as high as 50 mA/W at 1330 nm and 35 mA/W at 1550 nm, close to the responsivity of InGaAs photodiodes and five orders of magnitude higher than silicon devices in this wavelength region.

  3. Direct bandgap silicon: tensile-strained silicon nanocrystals

    Czech Academy of Sciences Publication Activity Database

    Kůsová, Kateřina; Hapala, Prokop; Valenta, J.; Jelínek, Pavel; Cibulka, Ondřej; Ondič, Lukáš; Pelant, Ivan

    2014-01-01

    Roč. 1, č. 2 (2014), "1300042-1"-"1300042-9" ISSN 2196-7350 R&D Projects: GA ČR(CZ) GBP108/12/G108; GA ČR GPP204/12/P235; GA ČR GAP204/10/0952 Institutional support: RVO:68378271 Keywords : silicon nanocrystals * badstructure * light emission * direct bandgap * surface capping Subject RIV: BM - Solid Matter Physics ; Magnetism

  4. Quantum Dot Laser for a Light Source of an Athermal Silicon Optical Interposer

    Directory of Open Access Journals (Sweden)

    Nobuaki Hatori

    2015-04-01

    Full Text Available This paper reports a hybrid integrated light source fabricated on a silicon platform using a 1.3 μm wavelength quantum dot array laser. Temperature insensitive characteristics up to 120 °C were achieved by the optimum quantum dot structure and laser structure. Light output power was obtained that was high enough to achieve an optical error-free link of a silicon optical interposer. Furthermore, we investigated a novel spot size convertor in a silicon waveguide suitable for a quantum dot laser for lower energy cost operation of the optical interposer.

  5. Photo-Electrical Characterization of Silicon Micropillar Arrays with Radial p/n Junctions Containing Passivation and Anti-Reflection Coatings

    NARCIS (Netherlands)

    Vijselaar, Wouter; Elbersen, R.; Tiggelaar, Roald M.; Gardeniers, Han; Huskens, Jurriaan

    2017-01-01

    In order to assess the contributions of anti-reflective and passivation effects in microstructured silicon-based solar light harvesting devices, thin layers of aluminum oxide (Al2O3), silicon dioxide (SiO2), silicon-rich silicon nitride (SiNx), and indium tin oxide (ITO), with a thickness ranging

  6. A silicon tracker for Christmas

    CERN Multimedia

    2008-01-01

    The CMS experiment installed the world’s largest silicon tracker just before Christmas. Marcello Mannelli: physicist and deputy CMS project leader, and Alan Honma, physicist, compare two generations of tracker: OPAL for the LEP (at the front) and CMS for the LHC (behind). There is quite a difference between 1m2 and 205m2.. CMS received an early Christmas present on 18 December when the silicon tracker was installed in the heart of the CMS magnet. The CMS tracker team couldn’t have hoped for a better present. Carefully wrapped in shiny plastic, the world’s largest silicon tracker arrived at Cessy ready for installation inside the CMS magnet on 18 December. This rounded off the year for CMS with a major event, the crowning touch to ten years of work on the project by over five hundred scientists and engineers. "Building a scientific instrument of this size and complexity is a huge technical a...

  7. An All Silicon Feedhorn-Coupled Focal Plane for Cosmic Microwave Background Polarimetry

    Science.gov (United States)

    Hubmayr, J.; Appel, J. W.; Austermann, J. E.; Beall, J. A.; Becker, D.; Benson, B. A.; Bleem, L. E.; Carlstrom, J. E.; Chang, C. L.; Cho, H. M.; hide

    2011-01-01

    Upcoming experiments aim to produce high fidelity polarization maps of the cosmic microwave background. To achieve the required sensitivity, we are developing monolithic, feedhorn-coupled transition edge sensor polarimeter arrays operating at 150 GHz. We describe this focal plane architecture and the current status of this technology, focusing on single-pixel polarimeters being deployed on the Atacama B-mode Search (ABS) and an 84-pixel demonstration feedhorn array backed by four 10-pixel polarimeter arrays. The feedhorn array exhibits symmetric beams, cross-polar response less than -23 dB and excellent uniformity across the array. Monolithic polarimeter arrays, including arrays of silicon feedhorns, will be used in the Atacama Cosmology Telescope Polarimeter (ACTPol) and the South Pole Telescope Polarimeter (SPTpol) and have been proposed for upcoming balloon-borne instruments.

  8. Mn-silicide nanostructures aligned on massively parallel silicon nano-ribbons

    International Nuclear Information System (INIS)

    De Padova, Paola; Ottaviani, Carlo; Ronci, Fabio; Colonna, Stefano; Quaresima, Claudio; Cricenti, Antonio; Olivieri, Bruno; Dávila, Maria E; Hennies, Franz; Pietzsch, Annette; Shariati, Nina; Le Lay, Guy

    2013-01-01

    The growth of Mn nanostructures on a 1D grating of silicon nano-ribbons is investigated at atomic scale by means of scanning tunneling microscopy, low energy electron diffraction and core level photoelectron spectroscopy. The grating of silicon nano-ribbons represents an atomic scale template that can be used in a surface-driven route to control the combination of Si with Mn in the development of novel materials for spintronics devices. The Mn atoms show a preferential adsorption site on silicon atoms, forming one-dimensional nanostructures. They are parallel oriented with respect to the surface Si array, which probably predetermines the diffusion pathways of the Mn atoms during the process of nanostructure formation.

  9. Design and operation of grid-interactive thin-film silicon PV systems

    Science.gov (United States)

    Marion, Bill; Atmaram, Gobind; Lashway, Clin; Strachan, John W.

    Results are described from the operation of 11 thin-film amorphous silicon photovoltaic systems at three test facilities: the Florida Solar Energy Center, the New Mexico Solar Energy Institute, and Sandia National Laboratories. Commercially available modules from four US manufacturers are used in these systems, with array sizes from 133 to 750 W peak. Measured array efficiencies are from 3.1 to 4.8 percent. Except for one manufacturer, array peak power is in agreement with the calculated design ratings. For certain grid-connected systems, nonoptimal operation exists because the array peak power voltage is below the lower voltage limit of the power conditioning system. Reliability problems are found in two manufacturers' modules when shorts to ground and terminal corrosion occur. Array leakage current data are presented.

  10. Energy efficiency enhancements for semiconductors, communications, sensors and software achieved in cool silicon cluster project

    Science.gov (United States)

    Ellinger, Frank; Mikolajick, Thomas; Fettweis, Gerhard; Hentschel, Dieter; Kolodinski, Sabine; Warnecke, Helmut; Reppe, Thomas; Tzschoppe, Christoph; Dohl, Jan; Carta, Corrado; Fritsche, David; Tretter, Gregor; Wiatr, Maciej; Detlef Kronholz, Stefan; Mikalo, Ricardo Pablo; Heinrich, Harald; Paulo, Robert; Wolf, Robert; Hübner, Johannes; Waltsgott, Johannes; Meißner, Klaus; Richter, Robert; Michler, Oliver; Bausinger, Markus; Mehlich, Heiko; Hahmann, Martin; Möller, Henning; Wiemer, Maik; Holland, Hans-Jürgen; Gärtner, Roberto; Schubert, Stefan; Richter, Alexander; Strobel, Axel; Fehske, Albrecht; Cech, Sebastian; Aßmann, Uwe; Pawlak, Andreas; Schröter, Michael; Finger, Wolfgang; Schumann, Stefan; Höppner, Sebastian; Walter, Dennis; Eisenreich, Holger; Schüffny, René

    2013-07-01

    An overview about the German cluster project Cool Silicon aiming at increasing the energy efficiency for semiconductors, communications, sensors and software is presented. Examples for achievements are: 1000 times reduced gate leakage in transistors using high-fc (HKMG) materials compared to conventional poly-gate (SiON) devices at the same technology node; 700 V transistors integrated in standard 0.35 μm CMOS; solar cell efficiencies above 19% at cars Contribution to the Topical Issue “International Semiconductor Conference Dresden-Grenoble - ISCDG 2012”, Edited by Gérard Ghibaudo, Francis Balestra and Simon Deleonibus.

  11. Silicon: the evolution of its use in biomaterials.

    Science.gov (United States)

    Henstock, J R; Canham, L T; Anderson, S I

    2015-01-01

    In the 1970s, several studies revealed the requirement for silicon in bone development, while bioactive silicate glasses simultaneously pioneered the current era of bioactive materials. Considerable research has subsequently focused on the chemistry and biological function of silicon in bone, demonstrating that the element has at least two separate effects in the extracellular matrix: (i) interacting with glycosaminoglycans and proteoglycans during their synthesis, and (ii) forming ionic substitutions in the crystal lattice structure of hydroxyapatite. In addition, the dissolution products of bioactive glass (predominantly silicic acids) have significant effects on the molecular biology of osteoblasts in vitro, regulating the expression of several genes including key osteoblastic markers, cell cycle regulators and extracellular matrix proteins. Researchers have sought to capitalize on these effects and have generated a diverse array of biomaterials, which include bioactive glasses, silicon-substituted hydroxyapatites and pure, porosified silicon, but all these materials share similarities in the mechanisms that result in their bioactivity. This review discusses the current data obtained from original research in biochemistry and biomaterials science supporting the role of silicon in bone, comparing both the biological function of the element and analysing the evolution of silicon-containing biomaterials. Copyright © 2014 Acta Materialia Inc. Published by Elsevier Ltd. All rights reserved.

  12. X-ray metrology of an array of active edge pixel sensors for use at synchrotron light sources

    Science.gov (United States)

    Plackett, R.; Arndt, K.; Bortoletto, D.; Horswell, I.; Lockwood, G.; Shipsey, I.; Tartoni, N.; Williams, S.

    2018-01-01

    We report on the production and testing of an array of active edge silicon sensors as a prototype of a large array. Four Medipix3RX.1 chips were bump bonded to four single chip sized Advacam active edge n-on-n sensors. These detectors were then mounted into a 2 by 2 array and tested on B16 at Diamond Light Source with an x-ray beam spot of 2um. The results from these tests, compared with optical metrology demonstrate that this type of sensor is sensitive to the physical edge of the silicon, with only a modest loss of efficiency in the final two rows of pixels. We present the efficiency maps recorded with the microfocus beam and a sample powder diffraction measurement. These results give confidence that this sensor technology can be used effectively in larger arrays of detectors at synchrotron light sources.

  13. Flip-chip bonded optoelectronic integration based on ultrathin silicon (UTSi) CMOS

    Science.gov (United States)

    Hong, Sunkwang; Ho, Tawei; Zhang, Liping; Sawchuk, Alexander A.

    2003-06-01

    We describe the design and test of flip-chip bonded optoelectronic CMOS devices based on Peregrine Semiconductor's 0.5 micron Ultra-Thin Silicon on sapphire (UTSi) technology. The UTSi process eliminates the substrate leakage that typically results in crosstalk and reduces parasitic capacitance to the substrate, providing many benefits compared to bulk silicon CMOS. The low-loss synthetic sapphire substrate is optically transparent and has a coefficient of thermal expansion suitable for flip-chip bonding of vertical cavity surface emitting lasers (VCSELs) and detectors. We have designed two different UTSi CMOS chips. One contains a flip-chip bonded 1 x 4 photodiode array, a receiver array, a double edge triggered D-flip flop-based 2047-pattern pseudo random bit stream (PRBS) generator and a quadrature-phase LC-voltage controlled oscillator (VCO). The other chip contains a flip-chip bonded 1 x 4 VCSEL array, a driver array based on high-speed low-voltage differential signals (LVDS) and a full-balanced differential LC-VCO. Each VCSEL driver and receiver has individual input and bias voltage adjustments. Each UTSi chip is mounted on different printed circuit boards (PCBs) which have holes with about 1 mm radius for optical output and input paths through the sapphire substrate. We discuss preliminary testing of these chips.

  14. Nano-Photonic Structures for Light Trapping in Ultra-Thin Crystalline Silicon Solar Cells

    Directory of Open Access Journals (Sweden)

    Prathap Pathi

    2017-01-01

    Full Text Available Thick wafer-silicon is the dominant solar cell technology. It is of great interest to develop ultra-thin solar cells that can reduce materials usage, but still achieve acceptable performance and high solar absorption. Accordingly, we developed a highly absorbing ultra-thin crystalline Si based solar cell architecture using periodically patterned front and rear dielectric nanocone arrays which provide enhanced light trapping. The rear nanocones are embedded in a silver back reflector. In contrast to previous approaches, we utilize dielectric photonic crystals with a completely flat silicon absorber layer, providing expected high electronic quality and low carrier recombination. This architecture creates a dense mesh of wave-guided modes at near-infrared wavelengths in the absorber layer, generating enhanced absorption. For thin silicon (<2 μm and 750 nm pitch arrays, scattering matrix simulations predict enhancements exceeding 90%. Absorption approaches the Lambertian limit at small thicknesses (<10 μm and is slightly lower (by ~5% at wafer-scale thicknesses. Parasitic losses are ~25% for ultra-thin (2 μm silicon and just 1%–2% for thicker (>100 μm cells. There is potential for 20 μm thick cells to provide 30 mA/cm2 photo-current and >20% efficiency. This architecture has great promise for ultra-thin silicon solar panels with reduced material utilization and enhanced light-trapping.

  15. High-Resolution Spin-on-Patterning of Perovskite Thin Films for a Multiplexed Image Sensor Array.

    Science.gov (United States)

    Lee, Woongchan; Lee, Jongha; Yun, Huiwon; Kim, Joonsoo; Park, Jinhong; Choi, Changsoon; Kim, Dong Chan; Seo, Hyunseon; Lee, Hakyong; Yu, Ji Woong; Lee, Won Bo; Kim, Dae-Hyeong

    2017-10-01

    Inorganic-organic hybrid perovskite thin films have attracted significant attention as an alternative to silicon in photon-absorbing devices mainly because of their superb optoelectronic properties. However, high-definition patterning of perovskite thin films, which is important for fabrication of the image sensor array, is hardly accomplished owing to their extreme instability in general photolithographic solvents. Here, a novel patterning process for perovskite thin films is described: the high-resolution spin-on-patterning (SoP) process. This fast and facile process is compatible with a variety of spin-coated perovskite materials and perovskite deposition techniques. The SoP process is successfully applied to develop a high-performance, ultrathin, and deformable perovskite-on-silicon multiplexed image sensor array, paving the road toward next-generation image sensor arrays. © 2017 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  16. Development and characterisation of a front-end ASIC for macro array of photo-detectors of large dimensions

    International Nuclear Information System (INIS)

    Conforti Di Lorenzo, S.

    2010-10-01

    The coverage of large areas of photo-detection is a crucial element of experiments studying high energy atmospheric cosmic showers and neutrinos from different sources. The objective of this project is to realize big detectors using thousands of photomultipliers (PMT). The project proposes to segment the large surface of photo-detection into macro pixels consisting of an array of 16 PMT of 12 inches (2*2 m 2 ), connected to an autonomous front-end electronics which works in without-trigger data acquisition mode placed near the array. This is possible thanks to the microelectronics progress that allows to integrate the readout and the signal processing, of all the multipliers, in the same circuit (ASIC) named PARISROC (Photomultiplier Array Integrated ins SiGe Read Out Chip). The ASIC must only send out the digital data by network to the surface central data storage. The PARISROC chip made in AM's Silicon Germanium (SiGe) 0.35 μm technology, integrates 16 independent channels for each PMT of the array, providing charge and time measurements. The first prototype of PARISROC chip has a total surface of 19 mm 2 . The ASIC measurements have led to the realization of a second prototype. Important measurements were performed in terms of noise, dynamic range, readout frequency (from 10 MHz to 40 MHz), time measurements (TDC improvements) and charge measurements (Slow shaper improvements). This new prototype of PARISROC-2 has been tested and the characterisation has shown a good overall behavior and the verification of the improvements. (author)

  17. Vertical group III-V nanowires on si, heterostructures, flexible arrays and fabrication

    Science.gov (United States)

    Wang, Deli; Soci, Cesare; Bao, Xinyu; Wei, Wei; Jing, Yi; Sun, Ke

    2015-01-13

    Embodiments of the invention provide a method for direct heteroepitaxial growth of vertical III-V semiconductor nanowires on a silicon substrate. The silicon substrate is etched to substantially completely remove native oxide. It is promptly placed in a reaction chamber. The substrate is heated and maintained at a growth temperature. Group III-V precursors are flowed for a growth time. Preferred embodiment vertical Group III-V nanowires on silicon have a core-shell structure, which provides a radial homojunction or heterojunction. A doped nanowire core is surrounded by a shell with complementary doping. Such can provide high optical absorption due to the long optical path in the axial direction of the vertical nanowires, while reducing considerably the distance over which carriers must diffuse before being collected in the radial direction. Alloy composition can also be varied. Radial and axial homojunctions and heterojunctions can be realized. Embodiments provide for flexible Group III-V nanowire structures. An array of Group III-V nanowire structures is embedded in polymer. A fabrication method forms the vertical nanowires on a substrate, e.g., a silicon substrate. Preferably, the nanowires are formed by the preferred methods for fabrication of Group III-V nanowires on silicon. Devices can be formed with core/shell and core/multi-shell nanowires and the devices are released from the substrate upon which the nanowires were formed to create a flexible structure that includes an array of vertical nanowires embedded in polymer.

  18. A silicon pixel detector with routing for external VLSI read-out

    International Nuclear Information System (INIS)

    Thomas, S.L.; Seller, P.

    1988-07-01

    A silicon pixel detector with an array of 32 by 16 hexagonal pixels has been designed and is being built on high resistivity silicon. The detector elements are reverse biased diodes consisting of p-implants in an n-type substrate and are fully depleted from the front to the back of the wafer. They are intended to measure high energy ionising particles traversing the detector. The detailed design of the pixels, their layout and method of read-out are discussed. A number of test structures have been incorporated onto the wafer to enable measurements to be made on individual pixels together with a variety of active devices. The results will give a better understanding of the operation of the pixel array, and will allow testing of computer simulations of more elaborate structures for the future. (author)

  19. Flat-plate solar array project. Volume 7: Module encapsulation

    Science.gov (United States)

    Cuddihy, E.; Coulbert, C.; Gupta, A.; Liang, R.

    1986-01-01

    The objective of the Encapsulation Task was to develop, demonstrate, and qualify photovoltaic (PV) module encapsulation systems that would provide 20 year (later decreased to 30 year) life expectancies in terrestrial environments, and which would be compatible with the cost and performance goals of the Flat-Plate Solar Array (FSA) Project. The scope of the Encapsulation Task included the identification, development, and evaluation of material systems and configurations required to support and protect the optically and electrically active solar cell circuit components in the PV module operating environment. Encapsulation material technologies summarized include the development of low cost ultraviolet protection techniques, stable low cost pottants, soiling resistant coatings, electrical isolation criteria, processes for optimum interface bonding, and analytical and experimental tools for evaluating the long term durability and structural adequacy of encapsulated modules. Field testing, accelerated stress testing, and design studies have demonstrated that encapsulation materials, processes, and configurations are available that meet the FSA cost and performance goals.

  20. The development of high resolution silicon x-ray microcalorimeters

    Science.gov (United States)

    Porter, F. S.; Kelley, R. L.; Kilbourne, C. A.

    2005-12-01

    Recently we have produced x-ray microcalorimeters with resolving powers approaching 2000 at 5.9 keV using a spare XRS microcalorimeter array. We attached 400 um square, 8 um thick HgTe absorbers using a variety of attachment methods to an XRS array and ran the detector array at temperatures between 40 and 60 mK. The best results were for absorbers attached using the standard XRS absorber-pixel thermal isolation scheme utilizing SU8 polymer tubes. In this scenario we achieved a resolution of 3.2 eV FWHM at 5.9 keV. Substituting a silicon spacer for the SU8 tubes also yielded sub-4eV results. In contrast, absorbers attached directly to the thermistor produced significant position dependence and thus degraded resolution. Finally, we tested standard 640um-square XRS detectors at reduced bias power at 50mK and achieved a resolution of 3.7eV, a 50% improvement over the XRS flight instrument. Implanted silicon microcalorimeters are a mature flight-qualified technology that still has a substantial phase space for future development. We will discuss these new high resolution results, the various absorber attachment schemes, planned future improvements, and, finally, their relevance to future high resolution x-ray spectrometers including Constellation-X.

  1. Sub-wavelength grating mode transformers in silicon slab waveguides.

    Science.gov (United States)

    Bock, Przemek J; Cheben, Pavel; Schmid, Jens H; Delâge, André; Xu, Dan-Xia; Janz, Siegfried; Hall, Trevor J

    2009-10-12

    We report on several new types of sub-wavelength grating (SWG) gradient index structures for efficient mode coupling in high index contrast slab waveguides. Using a SWG, an adiabatic transition is achieved at the interface between silicon-on-insulator waveguides of different geometries. The SWG transition region minimizes both fundamental mode mismatch loss and coupling to higher order modes. By creating the gradient effective index region in the direction of propagation, we demonstrate that efficient vertical mode transformation can be achieved between slab waveguides of different core thickness. The structures which we propose can be fabricated by a single etch step. Using 3D finite-difference time-domain simulations we study the loss, polarization dependence and the higher order mode excitation for two types (triangular and triangular-transverse) of SWG transition regions between silicon-on-insulator slab waveguides of different core thicknesses. We demonstrate two solutions to reduce the polarization dependent loss of these structures. Finally, we propose an implementation of SWG structures to reduce loss and higher order mode excitation between a slab waveguide and a phase array of an array waveguide grating (AWG). Compared to a conventional AWG, the loss is reduced from -1.4 dB to < -0.2 dB at the slab-array interface.

  2. Preliminary Investigation of an SOI-based Arrayed Waveguide Grating Demodulation Integration Microsystem

    Science.gov (United States)

    Li, Hongqiang; Zhou, Wenqian; Liu, Yu; Dong, Xiaye; Zhang, Cheng; Miao, Changyun; Zhang, Meiling; Li, Enbang; Tang, Chunxiao

    2014-05-01

    An arrayed waveguide grating (AWG) demodulation integration microsystem is investigated in this study. The system consists of a C-band on-chip LED, a 2 × 2 silicon nanowire-based coupler, a fiber Bragg grating (FBG) array, a 1 × 8 AWG, and a photoelectric detector array. The coupler and AWG are made from silicon-on-insulator wafers using electron beam exposure and response-coupled plasma technology. Experimental results show that the excess loss in the MMI coupler with a footprint of 6 × 100 μm2 is 0.5423 dB. The 1 × 8 AWG with a footprint of 267 × 381 μm2 and a waveguide width of 0.4 μm exhibits a central channel loss of -3.18 dB, insertion loss non-uniformity of -1.34 dB, and crosstalk level of -23.1 dB. The entire system is preliminarily tested. Wavelength measurement precision is observed to reach 0.001 nm. The wavelength sensitivity of each FBG is between 0.04 and 0.06 nm/dB.

  3. Gain compensation technique by bias correction in arrays of Silicon Photomultipliers using fully differential fast shaper

    Energy Technology Data Exchange (ETDEWEB)

    Baszczyk, M., E-mail: baszczyk@agh.edu.pl [AGH University of Science and Technology, Department of Electronics, Krakow (Poland); Dorosz, P.; Glab, S.; Kucewicz, W. [AGH University of Science and Technology, Department of Electronics, Krakow (Poland); Mik, L. [AGH University of Science and Technology, Department of Electronics, Krakow (Poland); State Higher Vocational School, Tarnow (Poland); Sapor, M. [AGH University of Science and Technology, Department of Electronics, Krakow (Poland)

    2016-07-11

    Proposed algorithm compensates the gain by changing the bias voltage of Silicon Photomultipliers (SiPM). The signal from SiPM is amplified in fully differential preamplifier then is formed in time by the fully differential fast shaper. The compensation method was tested with four channels common cathode multi-pixel photon counter from Hamamatsu. The measurement system requires only one high voltage power supply. The polarization voltage is adjusted individually in each channel indirectly by tuning the output common mode voltage (VOCM) of fully differential amplifier. The changes of VOCM affect the input voltage through the feedback network. Actual gain of the SiPM is calculated by measuring the mean amplitude of the signal resulting from detection of single photoelectron. The VOCM is adjusted by DAC so as to reach the desired value of gain by each channel individually. The advantage of the algorithm is the possibility to set the bias of each SiPM in the array independently so they all could operate in very similar conditions (have similar gain and dark count rate). The algorithm can compensate the variations of gain of SiPM by using thermally generated pulses. There is no need to use additional current to voltage conversion which could introduce extra noises.

  4. Gain compensation technique by bias correction in arrays of Silicon Photomultipliers using fully differential fast shaper

    Science.gov (United States)

    Baszczyk, M.; Dorosz, P.; Glab, S.; Kucewicz, W.; Mik, L.; Sapor, M.

    2016-07-01

    Proposed algorithm compensates the gain by changing the bias voltage of Silicon Photomultipliers (SiPM). The signal from SiPM is amplified in fully differential preamplifier then is formed in time by the fully differential fast shaper. The compensation method was tested with four channels common cathode multi-pixel photon counter from Hamamatsu. The measurement system requires only one high voltage power supply. The polarization voltage is adjusted individually in each channel indirectly by tuning the output common mode voltage (VOCM) of fully differential amplifier. The changes of VOCM affect the input voltage through the feedback network. Actual gain of the SiPM is calculated by measuring the mean amplitude of the signal resulting from detection of single photoelectron. The VOCM is adjusted by DAC so as to reach the desired value of gain by each channel individually. The advantage of the algorithm is the possibility to set the bias of each SiPM in the array independently so they all could operate in very similar conditions (have similar gain and dark count rate). The algorithm can compensate the variations of gain of SiPM by using thermally generated pulses. There is no need to use additional current to voltage conversion which could introduce extra noises.

  5. Gain compensation technique by bias correction in arrays of Silicon Photomultipliers using fully differential fast shaper

    International Nuclear Information System (INIS)

    Baszczyk, M.; Dorosz, P.; Glab, S.; Kucewicz, W.; Mik, L.; Sapor, M.

    2016-01-01

    Proposed algorithm compensates the gain by changing the bias voltage of Silicon Photomultipliers (SiPM). The signal from SiPM is amplified in fully differential preamplifier then is formed in time by the fully differential fast shaper. The compensation method was tested with four channels common cathode multi-pixel photon counter from Hamamatsu. The measurement system requires only one high voltage power supply. The polarization voltage is adjusted individually in each channel indirectly by tuning the output common mode voltage (VOCM) of fully differential amplifier. The changes of VOCM affect the input voltage through the feedback network. Actual gain of the SiPM is calculated by measuring the mean amplitude of the signal resulting from detection of single photoelectron. The VOCM is adjusted by DAC so as to reach the desired value of gain by each channel individually. The advantage of the algorithm is the possibility to set the bias of each SiPM in the array independently so they all could operate in very similar conditions (have similar gain and dark count rate). The algorithm can compensate the variations of gain of SiPM by using thermally generated pulses. There is no need to use additional current to voltage conversion which could introduce extra noises.

  6. Performance analysis of solar cell arrays in concentrating light intensity

    International Nuclear Information System (INIS)

    Xu Yongfeng; Li Ming; Lin Wenxian; Wang Liuling; Xiang Ming; Zhang Xinghua; Wang Yunfeng; Wei Shengxian

    2009-01-01

    Performance of concentrating photovoltaic/thermal system is researched by experiment and simulation calculation. The results show that the I-V curve of the GaAs cell array is better than that of crystal silicon solar cell arrays and the exergy produced by 9.51% electrical efficiency of the GaAs solar cell array can reach 68.93% of the photovoltaic/thermal system. So improving the efficiency of solar cell arrays can introduce more exergy and the system value can be upgraded. At the same time, affecting factors of solar cell arrays such as series resistance, temperature and solar irradiance also have been analyzed. The output performance of a solar cell array with lower series resistance is better and the working temperature has a negative impact on the voltage in concentrating light intensity. The output power has a -20 W/V coefficient and so cooling fluid must be used. Both heat energy and electrical power are then obtained with a solar trough concentrating photovoltaic/thermal system. (semiconductor devices)

  7. Porous silicon technology for integrated microsystems

    Science.gov (United States)

    Wallner, Jin Zheng

    With the development of micro systems, there is an increasing demand for integrable porous materials. In addition to those conventional applications, such as filtration, wicking, and insulating, many new micro devices, including micro reactors, sensors, actuators, and optical components, can benefit from porous materials. Conventional porous materials, such as ceramics and polymers, however, cannot meet the challenges posed by micro systems, due to their incompatibility with standard micro-fabrication processes. In an effort to produce porous materials that can be used in micro systems, porous silicon (PS) generated by anodization of single crystalline silicon has been investigated. In this work, the PS formation process has been extensively studied and characterized as a function of substrate type, crystal orientation, doping concentration, current density and surfactant concentration and type. Anodization conditions have been optimized for producing very thick porous silicon layers with uniform pore size, and for obtaining ideal pore morphologies. Three different types of porous silicon materials: meso porous silicon, macro porous silicon with straight pores, and macro porous silicon with tortuous pores, have been successfully produced. Regular pore arrays with controllable pore size in the range of 2mum to 6mum have been demonstrated as well. Localized PS formation has been achieved by using oxide/nitride/polysilicon stack as masking materials, which can withstand anodization in hydrofluoric acid up to twenty hours. A special etching cell with electrolytic liquid backside contact along with two process flows has been developed to enable the fabrication of thick macro porous silicon membranes with though wafer pores. For device assembly, Si-Au and In-Au bonding technologies have been developed. Very low bonding temperature (˜200°C) and thick/soft bonding layers (˜6mum) have been achieved by In-Au bonding technology, which is able to compensate the potentially

  8. Historical evidence of importance to the industrialization of flat-plate silicon photovoltaic systems. Volume 1: Executive summary

    Science.gov (United States)

    Smith, J. L.

    1978-01-01

    An analysis is given of the Low-Cost Silicon Solar Array Project plans for the industrialization of new production technologies expected to be forthcoming as a result of the project's technology development efforts. In particular, LSSA's mandate to insure an annual production capability of 500 MW peak for the photovoltaic supply industry by 1986 is critically examined. The examination focuses on one of the concerns behind this goal -- timely development of industrial capacity to supply anticipated demand. Some of the conclusions include: (1) construction of small-scale pilot plants should be undertaken only for purposes of technology development; (2) large-scale demonstrations should be undertaken only when the technology is well in hand; (3) commercial-scale production should be left to the private sector; (4) the 500-MW annual output goal should be shifted to Program Headquarters.

  9. The Design, Implementation, and Performance of the Astro-H SXS Calorimeter Array and Anti-Coincidence Detector

    Science.gov (United States)

    Kilbourne, Caroline A.; Adams, Joseph S.; Brekosky, Regis P.; Chiao, Meng P.; Chervenak, James A.; Eckart, Megan E.; Figueroa-Feliciano, Enectali; Galeazzi, Masimilliano; Grein, Christoph; Jhabvala, Christine A.; hide

    2016-01-01

    The calorimeter array of the JAXA Astro-H (renamed Hitomi) Soft X-ray Spectrometer (SXS) was designed to provide unprecedented spectral resolution of spatially extended cosmic x-ray sources and of all cosmic x-ray sources in the Fe-K band around 6 keV, enabling essential plasma diagnostics. The SXS has a square array of 36 microcalorimeters at the focal plane. These calorimeters consist of ion-implanted silicon thermistors and HgTe thermalizing x-ray absorbers. These devices have demonstrated a resolution of better than 4.5 eV at 6 keV when operated at a heat-sink temperature of 50 mK. We will discuss the basic physical parameters of this array, including the array layout, thermal conductance of the link to the heat sink, resistance function, absorber details, and means of attaching the absorber to the thermistor-bearing element. We will also present the thermal characterization of the whole array, including thermal conductance and crosstalk measurements and the results of pulsing the frame temperature via alpha particles, heat pulses, and the environmental background. A silicon ionization detector is located behind the calorimeter array and serves to reject events due to cosmic rays. We will briefly describe this anti-coincidence detector and its performance.

  10. Structural and Electrochemical Investigation during the First Charging Cycles of Silicon Microwire Array Anodes for High Capacity Lithium Ion Batteries

    Directory of Open Access Journals (Sweden)

    Helmut Föll

    2013-02-01

    Full Text Available Silicon microwire arrays embedded in Cu present exceptional performance as anode material in Li ion batteries. The processes occurring during the first charging cycles of batteries with this anode are essential for good performance. This paper sheds light on the electrochemical and structural properties of the anodes during the first charging cycles. Scanning Electron Microscopy, X-ray diffractommetry, and fast Fourier transformation impedance spectroscopy are used for the characterization. It was found that crystalline phases with high Li content are obtained after the first lithiation cycle, while for the second lithiation just crystalline phases with less Li are observable, indicating that the lithiated wires become amorphous upon cycling. The formation of a solid electrolyte interface of around 250 nm during the first lithiation cycle is evidenced, and is considered a necessary component for the good cycling performance of the wires. Analog to voltammetric techniques, impedance spectroscopy is confirmed as a powerful tool to identify the formation of the different Si-Li phases.

  11. Thin-film silicon solar cell technology

    Czech Academy of Sciences Publication Activity Database

    Shah, A. V.; Schade, H.; Vaněček, Milan; Meier, J.; Vallat-Sauvain, E.; Wyrsch, N.; Kroll, U.; Droz, C.; Bailat, J.

    2004-01-01

    Roč. 12, - (2004), s. 113-142 ISSN 1062-7995 R&D Projects: GA MŽP SN/320/11/03 Institutional research plan: CEZ:AV0Z1010914 Keywords : thin-film silicon modules * hydrogenerated amorphous silicon(a-Si:H) * hydrogenerated microcrystalline (ćc-Si:H) * transparent conductive oxydes(TCOs) * building-integrated photovoltaics(BIPV) Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 1.196, year: 2004

  12. Final report on LDRD project : single-photon-sensitive imaging detector arrays at 1600 nm

    International Nuclear Information System (INIS)

    Childs, Kenton David; Serkland, Darwin Keith; Geib, Kent Martin; Hawkins, Samuel D.; Carroll, Malcolm S.; Klem, John Frederick; Sheng, Josephine Juin-Jye; Patel, Rupal K.; Bolles, Desta; Bauer, Tom M.; Koudelka, Robert

    2006-01-01

    The key need that this project has addressed is a short-wave infrared light detector for ranging (LIDAR) imaging at temperatures greater than 100K, as desired by nonproliferation and work for other customers. Several novel device structures to improve avalanche photodiodes (APDs) were fabricated to achieve the desired APD performance. A primary challenge to achieving high sensitivity APDs at 1550 nm is that the small band-gap materials (e.g., InGaAs or Ge) necessary to detect low-energy photons exhibit higher dark counts and higher multiplication noise compared to materials like silicon. To overcome these historical problems APDs were designed and fabricated using separate absorption and multiplication (SAM) regions. The absorption regions used (InGaAs or Ge) to leverage these materials 1550 nm sensitivity. Geiger mode detection was chosen to circumvent gain noise issues in the III-V and Ge multiplication regions, while a novel Ge/Si device was built to examine the utility of transferring photoelectrons in a silicon multiplication region. Silicon is known to have very good analog and GM multiplication properties. The proposed devices represented a high-risk for high-reward approach. Therefore one primary goal of this work was to experimentally resolve uncertainty about the novel APD structures. This work specifically examined three different designs. An InGaAs/InAlAs Geiger mode (GM) structure was proposed for the superior multiplication properties of the InAlAs. The hypothesis to be tested in this structure was whether InAlAs really presented an advantage in GM. A Ge/Si SAM was proposed representing the best possible multiplication material (i.e., silicon), however, significant uncertainty existed about both the Ge material quality and the ability to transfer photoelectrons across the Ge/Si interface. Finally a third pure germanium GM structure was proposed because bulk germanium has been reported to have better dark count properties. However, significant

  13. Final report on LDRD project : single-photon-sensitive imaging detector arrays at 1600 nm.

    Energy Technology Data Exchange (ETDEWEB)

    Childs, Kenton David; Serkland, Darwin Keith; Geib, Kent Martin; Hawkins, Samuel D.; Carroll, Malcolm S.; Klem, John Frederick; Sheng, Josephine Juin-Jye; Patel, Rupal K.; Bolles, Desta; Bauer, Tom M.; Koudelka, Robert

    2006-11-01

    The key need that this project has addressed is a short-wave infrared light detector for ranging (LIDAR) imaging at temperatures greater than 100K, as desired by nonproliferation and work for other customers. Several novel device structures to improve avalanche photodiodes (APDs) were fabricated to achieve the desired APD performance. A primary challenge to achieving high sensitivity APDs at 1550 nm is that the small band-gap materials (e.g., InGaAs or Ge) necessary to detect low-energy photons exhibit higher dark counts and higher multiplication noise compared to materials like silicon. To overcome these historical problems APDs were designed and fabricated using separate absorption and multiplication (SAM) regions. The absorption regions used (InGaAs or Ge) to leverage these materials 1550 nm sensitivity. Geiger mode detection was chosen to circumvent gain noise issues in the III-V and Ge multiplication regions, while a novel Ge/Si device was built to examine the utility of transferring photoelectrons in a silicon multiplication region. Silicon is known to have very good analog and GM multiplication properties. The proposed devices represented a high-risk for high-reward approach. Therefore one primary goal of this work was to experimentally resolve uncertainty about the novel APD structures. This work specifically examined three different designs. An InGaAs/InAlAs Geiger mode (GM) structure was proposed for the superior multiplication properties of the InAlAs. The hypothesis to be tested in this structure was whether InAlAs really presented an advantage in GM. A Ge/Si SAM was proposed representing the best possible multiplication material (i.e., silicon), however, significant uncertainty existed about both the Ge material quality and the ability to transfer photoelectrons across the Ge/Si interface. Finally a third pure germanium GM structure was proposed because bulk germanium has been reported to have better dark count properties. However, significant

  14. Silicon Sheet Growth Development for the Large Area Sheet Task of the Low Cost Solar Array Project. Heat Exchanger Method - Ingot Casting Fixed Abrasive Method - Multi-Wire Slicing

    Science.gov (United States)

    Schmid, F.; Khattak, C. P.

    1978-01-01

    Solar cells fabricated from HEM cast silicon yielded up to 15% conversion efficiencies. This was achieved in spite of using unpurified graphite parts in the HEM furnace and without optimization of material or cell processing parameters. Molybdenum retainers prevented SiC formation and reduced carbon content by 50%. The oxygen content of vacuum cast HEM silicon is lower than typical Czochralski grown silicon. Impregnation of 45 micrometers diamonds into 7.5 micrometers copper sheath showed distortion of the copper layer. However, 12.5 micrometers and 15 micrometers copper sheath can be impregnated with 45 micrometers diamonds to a high concentration. Electroless nickel plating of wires impregnated only in the cutting edge showed nickel concentration around the diamonds. This has the possibility of reducing kerf. The high speed slicer fabricated can achieve higher speed and longer stroke with vibration isolation.

  15. Design and fabrication of a bidimentional microbolometer array for Terahertz detection characterized at different temperatures

    Energy Technology Data Exchange (ETDEWEB)

    Orduna-Diaz, A [CIBA-Tlaxcala, IPN, Tlaxcala, Tlax.(Mexico); Castillo-DomInguez, E; Torres-Jacome, A; De la Hidalga-Wade, F J; Trevino-Palacios, C G, E-mail: abdu@inaoep.mx [Instituto Nacional de Astrofisica, Optica y Electronica, Apdo. Postal 51 y 216, Puebla, Pue. 72000 (Mexico)

    2011-01-01

    We present the design, micromachining and characterization of a bidimentional bolometer array for radiation detection in the 0.7-1.5 THz frequency range. The detector is based on a boron doped amorphous silicon film (a-Si-B:H). The film optimized for sensitivity enhancement was obtained using 500 sccm diborane flow with 95 nm thickness. The sensing layer was deposited using plasma enhanced chemical vapor deposition (PECVD) technique at low frequency on a 0.45 {mu}m thick silicon nitride membrane sustained by a micromachined frame in crystalline silicon. The design consists of four 5x5 bolometer arrays made by conventional lithography. The bolometer active area is 660 {mu}m x 420 {mu}m and the detector will operate as a focal plane array. The current-voltage characteristics present an ohmic behaviour; the temperature coefficient of resistance (TCR) was obtained by measuring the bolometer performance from room temperature down to liquid nitrogen temperature. The responsivity was measured under illumination from a black body radiating at 300, 500, 700, 900 and 1100 deg. C, obtaining a value of R =1.17 x 10{sup -2} A/W with a dark current of 4.43 x 10{sup -9} A

  16. NTD Silicon; Product Characteristics, Main Uses and Growth Potential

    International Nuclear Information System (INIS)

    Hansen, M. G.; Bjorling, C. F.

    2013-01-01

    Topsil is a specialised manufacturer of ultrapure float zone silicon since 1959, headquartered in Denmark. Topsil co-pioneered the invention of Neutron Transmutation Doped (NTD) monocrystalline silicon with research institute Risoe in the 1970s and has since then been world leading manufacturer of NTD silicon for the power market. This presentation will focus on NTD silicon; its characteristics, invention and main uses. It will address the trends of the power market and market projections for NTD, and discuss the growth potential in the years ahead, including larger silicon wafers and management of the NTD supply chain

  17. NTD Silicon; Product Characteristics, Main Uses and Growth Potential

    Energy Technology Data Exchange (ETDEWEB)

    Hansen, M. G.; Bjorling, C. F. [Topsil Semiconductor Materials A/S, Odense (Denmark)

    2013-07-01

    Topsil is a specialised manufacturer of ultrapure float zone silicon since 1959, headquartered in Denmark. Topsil co-pioneered the invention of Neutron Transmutation Doped (NTD) monocrystalline silicon with research institute Risoe in the 1970s and has since then been world leading manufacturer of NTD silicon for the power market. This presentation will focus on NTD silicon; its characteristics, invention and main uses. It will address the trends of the power market and market projections for NTD, and discuss the growth potential in the years ahead, including larger silicon wafers and management of the NTD supply chain.

  18. Low crosstalk Arrayed Waveguide Grating with Cascaded Waveguide Grating Filter

    International Nuclear Information System (INIS)

    Deng Yang; Liu Yuan; Gao Dingshan

    2011-01-01

    We propose a highly compact and low crosstalk arrayed waveguide grating (AWG) with cascaded waveguide grating (CWGF). The side lobes of the silicon nanowire AWG, which are normally introduced by fabrication errors, can be effectively suppressed by the CWGF. And the crosstalk can be improved about 15dB.

  19. One-step synthesis of lightly doped porous silicon nanowires in HF/AgNO3/H2O2 solution at room temperature

    International Nuclear Information System (INIS)

    Bai, Fan; Li, Meicheng; Song, Dandan; Yu, Hang; Jiang, Bing; Li, Yingfeng

    2012-01-01

    One-step synthesis of lightly doped porous silicon nanowire arrays was achieved by etching the silicon wafer in HF/AgNO 3 /H 2 O 2 solution at room temperature. The lightly doped porous silicon nanowires (pNWs) have circular nanopores on the sidewall, which can emit strong green fluorescence. The surface morphologies of these nanowires could be controlled by simply adjusting the concentration of H 2 O 2 , which influences the distribution of silver nanoparticles (Ag NPs) along the nanowire axis. A mechanism based on Ag NPs-induced lateral etching of nanowires was proposed to explain the formation of pNWs. The controllable and widely applicable synthesis of pNWs will open their potential application to nanoscale photoluminescence devices. - Graphical abstract: The one-step synthesis of porous silicon nanowire arrays is achieved by chemical etching of the lightly doped p-type Si (100) wafer at room temperature. These nanowires exhibit strong green photoluminescence. SEM, TEM, HRTEM and photoluminescence images of pNWs. The scale bars of SEM, TEM HRTEM and photoluminescence are 10 μm, 20 nm, 10 nm, and 1 μm, respectively. Highlights: ► Simple one-step synthesis of lightly doped porous silicon nanowire arrays is achieved at RT. ► Etching process and mechanism are illustrated with etching model from a novel standpoint. ► As-prepared porous silicon nanowire emits strong green fluorescence, proving unique property.

  20. Vertically aligned nanowires on flexible silicone using a supported alumina template prepared by pulsed anodization

    DEFF Research Database (Denmark)

    Mátéfi-Tempfli, Stefan; Mátéfi-Tempfli, M.

    2009-01-01

    Carpets of vertically aligned nanowires on flexible substrates are successfully realized by a template method. Applying special pulsed anodization conditions, defect-free nanoporous alumina structures supported on polydimethylsiloxane (PDMS), a flexible silicone elastomer, are created. By using...... this template with nanopores ending on a conducting underlayer, a high-density nanowire array can be simply grown by direct DCelectrodeposition on the top of the silicone rubber....

  1. Fabrication of plasmonic cavity arrays for SERS analysis

    Science.gov (United States)

    Li, Ning; Feng, Lei; Teng, Fei; Lu, Nan

    2017-05-01

    The plasmonic cavity arrays are ideal substrates for surface enhanced Raman scattering analysis because they can provide hot spots with large volume for analyte molecules. The large area increases the probability to make more analyte molecules on hot spots and leads to a high reproducibility. Therefore, to develop a simple method for creating cavity arrays is important. Herein, we demonstrate how to fabricate a V and W shape cavity arrays by a simple method based on self-assembly. Briefly, the V and W shape cavity arrays are respectively fabricated by taking KOH etching on a nanohole and a nanoring array patterned silicon (Si) slides. The nanohole array is generated by taking a reactive ion etching on a Si slide assembled with monolayer of polystyrene (PS) spheres. The nanoring array is generated by taking a reactive ion etching on a Si slide covered with a monolayer of octadecyltrichlorosilane before self-assembling PS spheres. Both plasmonic V and W cavity arrays can provide large hot area, which increases the probability for analyte molecules to deposit on the hot spots. Taking 4-Mercaptopyridine as analyte probe, the enhancement factor can reach 2.99 × 105 and 9.97 × 105 for plasmonic V cavity and W cavity array, respectively. The relative standard deviations of the plasmonic V and W cavity arrays are 6.5% and 10.2% respectively according to the spectra collected on 20 random spots.

  2. Design and fabrication of two-dimensional semiconducting bolometer arrays for HAWC and SHARC-II

    Science.gov (United States)

    Voellmer, George M.; Allen, Christine A.; Amato, Michael J.; Babu, Sachidananda R.; Bartels, Arlin E.; Benford, Dominic J.; Derro, Rebecca J.; Dowell, C. D.; Harper, D. A.; Jhabvala, Murzy D.; Moseley, S. H.; Rennick, Timothy; Shirron, Peter J.; Smith, W. W.; Staguhn, Johannes G.

    2003-02-01

    The High resolution Airborne Wideband Camera (HAWC) and the Submillimeter High Angular Resolution Camera II (SHARC II) will use almost identical versions of an ion-implanted silicon bolometer array developed at the National Aeronautics and Space Administration's Goddard Space Flight Center (GSFC). The GSFC "Pop-Up" Detectors (PUD's) use a unique folding technique to enable a 12 × 32-element close-packed array of bolometers with a filling factor greater than 95 percent. A kinematic Kevlar suspension system isolates the 200 mK bolometers from the helium bath temperature, and GSFC - developed silicon bridge chips make electrical connection to the bolometers, while maintaining thermal isolation. The JFET preamps operate at 120 K. Providing good thermal heat sinking for these, and keeping their conduction and radiation from reaching the nearby bolometers, is one of the principal design challenges encountered. Another interesting challenge is the preparation of the silicon bolometers. They are manufactured in 32-element, planar rows using Micro Electro Mechanical Systems (MEMS) semiconductor etching techniques, and then cut and folded onto a ceramic bar. Optical alignment using specialized jigs ensures their uniformity and correct placement. The rows are then stacked to create the 12 × 32-element array. Engineering results from the first light run of SHARC II at the Caltech Submillimeter Observatory (CSO) are presented.

  3. Study on the optimization of the water Cherenkov detector array of the LHAASO project for surveying VHE gamma ray sources

    Science.gov (United States)

    Li, Hui-Cai; Chen, Ming-Jun; Jia, Huan-Yu; Gao, Bo; Wu, Han-Rong; Yao, Zhi-Guo; Yuo, Xiao-Hao; Zhou, Bin; Zhu, Feng-Rong

    2014-01-01

    It is prpopsed that a water Cherenkov detector array, LHAASO-WCDA, is to be built at Shangri-la, Yunnan Province, China. As one of the major components of the LHAASO project, the main purpose of it is to survey the northern sky for gamma ray sources in the energy range of 100 GeV-30 TeV. In order to design the water Cherenkov array efficiently to economize the budget, a Monte Carlo simulation is carried out. With the help of the simulation, the cost performance of different configurations of the array are obtained and compared with each other, serving as a guide for the more detailed design of the experiment in the next step.

  4. Study on the optimization of the water Cherenkov detector array of the LHAASO project for surveying VHE gamma ray sources

    International Nuclear Information System (INIS)

    Li Huicai; Chen Mingjun; Gao Bo; Wu Hanrong; Yao Zhiguo; Zhou Bin; Jia Huanyu; Zhu Fengrong; You Xiaohao

    2014-01-01

    It is proposed that a water Cherenkov detector array, LHAASO-WCDA, is to be built at Shangri-la, Yunnan Province, China. As one of the major components of the LHAASO project, the main purpose of it is to survey the northern sky for gamma ray sources in the energy range of 100 GeV-30 TeV. In order to design the water Cherenkov array efficiently to economize the budget, a Monte Carlo simulation is carried out. With the help of the simulation, the cost performance of different configurations of the array are obtained and compared with each other, serving as a guide for the more detailed design of the experiment in the next step. (authors)

  5. The fabrication of quantum wires in silicon utilising the characteristics of solid phase epitaxial regrowth of crystalline silicon

    International Nuclear Information System (INIS)

    Liu, A.C.Y.; McCallum, J.C.

    1998-01-01

    The process of solid phase epitaxy (SPE) in semiconductor materials is one which has been intensively researched due to possible applications in the semiconductor industry. SPE is a solid phase transformation, in which an amorphous layer can be recrystallized either through heating or a combination of heating and ion bombardment. The transformation is believed to occur exclusively at the interface between the amorphous and crystalline layers, with individual atoms from the amorphous phase being incorporated into the crystalline phase by some point defect mechanism. The process has been observed to follow an Arrhenius temperature dependence. A wafer silicon was subjected to a multi-energy silicon implant through a fine nickel grid to amorphise region to a depth of 5μm creating an array of amorphous wells. Metal impurity atoms were then implanted in this region at energy of 500 keV. Samples were examined using an optical microscope and the Alphastep profiler at RMIT. It was confirmed that burgeoning wells were about 2 μm wide and rose about 0.01 μm above the silicon substrate

  6. Fabrication and photoelectrochemical properties of silicon nanowires/g-C{sub 3}N{sub 4} core/shell arrays

    Energy Technology Data Exchange (ETDEWEB)

    Chen, Zhen [Institute of Electronic Paper Displays, South China Academy of Advanced Optoelectronics, South China Normal University, Guangzhou, Guangdong Province (China); Institute of Advanced Materials, South China Academy of Advanced Optoelectronics, South China Normal University, Guangzhou, Guangdong Province (China); Ma, Ge [Institute of Electronic Paper Displays, South China Academy of Advanced Optoelectronics, South China Normal University, Guangzhou, Guangdong Province (China); Chen, Zhihong, E-mail: chenzhihong1227@sina.com [Shenyang Institute of Automation, Guangzhou, Chinese Academy of Sciences, Guangzhou 511458 (China); Zhang, Yongguang [Research Institute for Energy Equipment Materials, Tianjin Key Laboratory of Materials Laminating Fabrication and Interface Control Technology, Hebei University of Technology, Tianjin 300130 (China); Zhang, Zhe [Institute of Electronic Paper Displays, South China Academy of Advanced Optoelectronics, South China Normal University, Guangzhou, Guangdong Province (China); Gao, Jinwei [Institute of Advanced Materials, South China Academy of Advanced Optoelectronics, South China Normal University, Guangzhou, Guangdong Province (China); Meng, Qingguo; Yuan, Mingzhe [Shenyang Institute of Automation, Guangzhou, Chinese Academy of Sciences, Guangzhou 511458 (China); Wang, Xin, E-mail: wangxin@scnu.edu.cn [Institute of Electronic Paper Displays, South China Academy of Advanced Optoelectronics, South China Normal University, Guangzhou, Guangdong Province (China); Liu, Jun-ming [Institute of Advanced Materials, South China Academy of Advanced Optoelectronics, South China Normal University, Guangzhou, Guangdong Province (China); Zhou, Guofu [Institute of Electronic Paper Displays, South China Academy of Advanced Optoelectronics, South China Normal University, Guangzhou, Guangdong Province (China)

    2017-02-28

    Highlights: • A novel Silicon Nanowires/g-C{sub 3}N{sub 4} core/shell arrays photoanode prepared by a mild and inexpensive metal-catalyzed electroless etching (MCEE) process followed by liquid atomic layer deposition (LALD), wiich is a facile and low-cost method. • In comparison with FTO/g-C{sub 3}N{sub 4} and Si NWs samples, the Si NWs/g-C{sub 3}N{sub 4} samples showed significantly enhanced photocurrent which could be attributed to the SiNWs-based core/shell structure. • A systematical PEC mechanism of the Si NWs/g-C{sub 3}N{sub 4} was proposed is this manuscript. - Abstract: A photoelectrochemical (PEC) cell made of metal-free carbon nitride (g-C{sub 3}N{sub 4}) @siliconnanowire(Si NW) arrays (denoted as Si NWs/g-C{sub 3}N{sub 4}) is presented in this work. The as-prepared photoelectrodes with different mass contents of g-C{sub 3}N{sub 4} have been synthesized via a metal-catalyzed electroless etching (MCEE), liquid atomic layer deposition (LALD) and annealing methods. The amount of g-C{sub 3}N{sub 4} on the Si NW arrays can be controlled by tuning the concentration of the cyanamide solution used in the LALD procedure. The dense and vertically aligned Si NWs/g-C{sub 3}N{sub 4} core/shell nanostructures were characterized by scanning electron microscopy (SEM), transmission electron microscopy (TEM), and X-ray diffraction (XRD). In comparison with FTO/g-C{sub 3}N{sub 4} and Si NW samples, the Si NWs/g-C{sub 3}N{sub 4} samples showed significantly enhanced photocurrents over the entire potential sweep range. Electrochemical impedance spectroscopy (EIS) was conducted to investigate the properties of the charge transfer process, and the results indicated that the enhanced PEC performance may be due to the increased photo-generated interfacial charge transfer between the Si NWs and g-C{sub 3}N{sub 4}. The photocurrent density reached 45 μA/cm{sup 2} under 100 mW/cm{sup 2} (AM 1.5 G) illumination at 0 V (vs. Pt) in neutral Na{sub 2}SO{sub 4} solution (pH ∼ 7

  7. Flat-plate solar array project. Volume 6: Engineering sciences and reliability

    Science.gov (United States)

    Ross, R. G., Jr.; Smokler, M. I.

    1986-01-01

    The Flat-Plate Solar Array (FSA) Project activities directed at developing the engineering technology base required to achieve modules that meet the functional, safety, and reliability requirements of large scale terrestrial photovoltaic systems applications are reported. These activities included: (1) development of functional, safety, and reliability requirements for such applications; (2) development of the engineering analytical approaches, test techniques, and design solutions required to meet the requirements; (3) synthesis and procurement of candidate designs for test and evaluation; and (4) performance of extensive testing, evaluation, and failure analysis of define design shortfalls and, thus, areas requiring additional research and development. A summary of the approach and technical outcome of these activities are provided along with a complete bibliography of the published documentation covering the detailed accomplishments and technologies developed.

  8. Optical analysis of a III-V-nanowire-array-on-Si dual junction solar cell.

    Science.gov (United States)

    Chen, Yang; Höhn, Oliver; Tucher, Nico; Pistol, Mats-Erik; Anttu, Nicklas

    2017-08-07

    A tandem solar cell consisting of a III-V nanowire subcell on top of a planar Si subcell is a promising candidate for next generation photovoltaics due to the potential for high efficiency. However, for success with such applications, the geometry of the system must be optimized for absorption of sunlight. Here, we consider this absorption through optics modeling. Similarly, as for a bulk dual-junction tandem system on a silicon bottom cell, a bandgap of approximately 1.7 eV is optimum for the nanowire top cell. First, we consider a simplified system of bare, uncoated III-V nanowires on the silicon substrate and optimize the absorption in the nanowires. We find that an optimum absorption in 2000 nm long nanowires is reached for a dense array of approximately 15 nanowires per square micrometer. However, when we coat such an array with a conformal indium tin oxide (ITO) top contact layer, a substantial absorption loss occurs in the ITO. This ITO could absorb 37% of the low energy photons intended for the silicon subcell. By moving to a design with a 50 nm thick, planarized ITO top layer, we can reduce this ITO absorption to 5%. However, such a planarized design introduces additional reflection losses. We show that these reflection losses can be reduced with a 100 nm thick SiO 2 anti-reflection coating on top of the ITO layer. When we at the same time include a Si 3 N 4 layer with a thickness of 90 nm on the silicon surface between the nanowires, we can reduce the average reflection loss of the silicon cell from 17% to 4%. Finally, we show that different approximate models for the absorption in the silicon substrate can lead to a 15% variation in the estimated photocurrent density in the silicon subcell.

  9. Morphology of IR and UV Laser-induced Structural Changes on Silicon Surfaces

    International Nuclear Information System (INIS)

    Jimenez-Jarquin, J.; Haro-Poniatowski, E.; Fernandez-Guasti, M.; Hernandez-Pozos, J.L.

    2005-01-01

    Using scanning electronic microscopy, we analyze the structural changes induced in silicon (100) wafers by focused IR (1064 nm) and UV (355 nm) nanosecond laser pulses. The experiments were performed in the laser ablation regime. When a silicon surface is irradiated by laser pulses in an O2 atmosphere conical microstructures are obtained. The changes in silicon surface morphology depend both on the incident radiation wavelength and the environmental atmosphere. We have patterned Si surfaces with a single focused laser spot and, in doing the experiments with IR or UV this reveals significant differences in the initial surface cracking and pattern formation, however the final result consist of an array of microcones when the experiment is carried out in oxygen. We employ a random scanning technique to irradiate silicon surfaces over large areas. In this form we have obtained large patterned areas

  10. Radiation damage studies for the DOe silicon detector

    International Nuclear Information System (INIS)

    Lehner, Frank

    2004-01-01

    We report on irradiation studies performed on spare production silicon detector modules for the current DOe silicon detector. The lifetime expectations due to radiation damage effects of the existing silicon detector are reviewed. A new upgrade project was started with the goal of a complete replacement of the existing silicon detector. In that context, several investigations on the radiation hardness of new prototype silicon microstrip detectors were carried out. The irradiation on different detector types was performed with 10 MeV protons up to fluences of 10 14 p/cm 2 at the J.R. Mcdonald Laboratory at Kansas State University. The flux calibration was carefully checked using different normalisation techniques. As a result, we observe roughly 40-50% less radiation damage in silicon for 10 MeV p exposure than it is expected by the predicted NIEL scaling

  11. Solidification and properties of photovoltaic silicon

    International Nuclear Information System (INIS)

    Anon.

    2007-01-01

    Strenuous efforts are being made to develop an economical process for purifying liquid metallurgical-grade silicon, in response to the growing shortages in high-purity silicon for use in manufacturing photovoltaic cells. A research project is studying this issue at C.E. Saclay, Gif-sur-Yvette, France, co-funded by ADEME (the French Environment and Energy Management Agency) and CEA-INSTN (French Atomic Energy Commission National Institute for Nuclear Science and Technology). (authors)

  12. Amorphous silicon detectors in positron emission tomography

    Energy Technology Data Exchange (ETDEWEB)

    Conti, M. (Istituto Nazionale di Fisica Nucleare, Pisa (Italy) Lawrence Berkeley Lab., CA (USA)); Perez-Mendez, V. (Lawrence Berkeley Lab., CA (USA))

    1989-12-01

    The physics of the detection process is studied and the performances of different Positron Emission Tomography (PET) system are evaluated by theoretical calculation and/or Monte Carlo Simulation (using the EGS code) in this paper, whose table of contents can be summarized as follows: a brief introduction to amorphous silicon detectors and some useful equation is presented; a Tantalum/Amorphous Silicon PET project is studied and the efficiency of the systems is studied by Monte Carlo Simulation; two similar CsI/Amorphous Silicon PET projects are presented and their efficiency and spatial resolution are studied by Monte Carlo Simulation, light yield and time characteristics of the scintillation light are discussed for different scintillators; some experimental result on light yield measurements are presented; a Xenon/Amorphous Silicon PET is presented, the physical mechanism of scintillation in Xenon is explained, a theoretical estimation of total light yield in Xenon and the resulting efficiency is discussed altogether with some consideration of the time resolution of the system; the amorphous silicon integrated electronics is presented, total noise and time resolution are evaluated in each of our applications; the merit parameters {epsilon}{sup 2}{tau}'s are evaluated and compared with other PET systems and conclusions are drawn; and a complete reference list for Xenon scintillation light physics and its applications is presented altogether with the listing of the developed simulation programs.

  13. Amorphous silicon detectors in positron emission tomography

    International Nuclear Information System (INIS)

    Conti, M.; Perez-Mendez, V.

    1989-12-01

    The physics of the detection process is studied and the performances of different Positron Emission Tomography (PET) system are evaluated by theoretical calculation and/or Monte Carlo Simulation (using the EGS code) in this paper, whose table of contents can be summarized as follows: a brief introduction to amorphous silicon detectors and some useful equation is presented; a Tantalum/Amorphous Silicon PET project is studied and the efficiency of the systems is studied by Monte Carlo Simulation; two similar CsI/Amorphous Silicon PET projects are presented and their efficiency and spatial resolution are studied by Monte Carlo Simulation, light yield and time characteristics of the scintillation light are discussed for different scintillators; some experimental result on light yield measurements are presented; a Xenon/Amorphous Silicon PET is presented, the physical mechanism of scintillation in Xenon is explained, a theoretical estimation of total light yield in Xenon and the resulting efficiency is discussed altogether with some consideration of the time resolution of the system; the amorphous silicon integrated electronics is presented, total noise and time resolution are evaluated in each of our applications; the merit parameters ε 2 τ's are evaluated and compared with other PET systems and conclusions are drawn; and a complete reference list for Xenon scintillation light physics and its applications is presented altogether with the listing of the developed simulation programs

  14. Microwell Arrays for Studying Many Individual Cells

    Science.gov (United States)

    Folch, Albert; Kosar, Turgut Fettah

    2009-01-01

    "Laboratory-on-a-chip" devices that enable the simultaneous culturing and interrogation of many individual living cells have been invented. Each such device includes a silicon nitride-coated silicon chip containing an array of micromachined wells sized so that each well can contain one cell in contact or proximity with a patch clamp or other suitable single-cell-interrogating device. At the bottom of each well is a hole, typically 0.5 m wide, that connects the well with one of many channels in a microfluidic network formed in a layer of poly(dimethylsiloxane) on the underside of the chip. The microfluidic network makes it possible to address wells (and, thus, cells) individually to supply them with selected biochemicals. The microfluidic channels also provide electrical contact to the bottoms of the wells.

  15. Design of silicon-based fractal antennas

    KAUST Repository

    Ghaffar, Farhan A.

    2012-11-20

    This article presents Sierpinski carpet fractal antennas implemented in conventional low resistivity (Ï =10 Ω cm) as well as high resistivity (Ï =1500 Ω cm) silicon mediums. The fractal antenna is 36% smaller as compared with a typical patch antenna at 24 GHz and provides 13% bandwidth on high resistivity silicon, suitable for high data rate applications. For the first time, an on-chip fractal antenna array is demonstrated in this work which provides double the gain of a single fractal element as well as enhanced bandwidth. A custom test fixture is utilized to measure the radiation pattern and gain of these probe-fed antennas. In addition to gain and impedance characterization, measurements have also been made to study intrachip communication through these antennas. The comparison between the low resistivity and high resistivity antennas indicate that the former is not a suitable medium for array implementation and is only suitable for short range communication whereas the latter is appropriate for short and medium range wireless communication. The design is well-suited for compact, high data rate System-on-Chip (SoC) applications as well as for intrachip communication such as wireless global clock distribution in synchronous systems. © 2012 Wiley Periodicals, Inc. Microwave Opt Technol Lett 55:180-186, 2013; View this article online at wileyonlinelibrary.com. DOI 10.1002/mop.27245 Copyright © 2012 Wiley Periodicals, Inc.

  16. Design of silicon-based fractal antennas

    KAUST Repository

    Ghaffar, Farhan A.; Shamim, Atif

    2012-01-01

    This article presents Sierpinski carpet fractal antennas implemented in conventional low resistivity (Ï =10 Ω cm) as well as high resistivity (Ï =1500 Ω cm) silicon mediums. The fractal antenna is 36% smaller as compared with a typical patch antenna at 24 GHz and provides 13% bandwidth on high resistivity silicon, suitable for high data rate applications. For the first time, an on-chip fractal antenna array is demonstrated in this work which provides double the gain of a single fractal element as well as enhanced bandwidth. A custom test fixture is utilized to measure the radiation pattern and gain of these probe-fed antennas. In addition to gain and impedance characterization, measurements have also been made to study intrachip communication through these antennas. The comparison between the low resistivity and high resistivity antennas indicate that the former is not a suitable medium for array implementation and is only suitable for short range communication whereas the latter is appropriate for short and medium range wireless communication. The design is well-suited for compact, high data rate System-on-Chip (SoC) applications as well as for intrachip communication such as wireless global clock distribution in synchronous systems. © 2012 Wiley Periodicals, Inc. Microwave Opt Technol Lett 55:180-186, 2013; View this article online at wileyonlinelibrary.com. DOI 10.1002/mop.27245 Copyright © 2012 Wiley Periodicals, Inc.

  17. Silicon spintronics: Progress and challenges

    Energy Technology Data Exchange (ETDEWEB)

    Sverdlov, Viktor; Selberherr, Siegfried, E-mail: Selberherr@TUWien.ac.at

    2015-07-14

    Electron spin attracts much attention as an alternative to the electron charge degree of freedom for low-power reprogrammable logic and non-volatile memory applications. Silicon appears to be the perfect material for spin-driven applications. Recent progress and challenges regarding spin-based devices are reviewed. An order of magnitude enhancement of the electron spin lifetime in silicon thin films by shear strain is predicted and its impact on spin transport in SpinFETs is discussed. A relatively weak coupling between spin and effective electric field in silicon allows magnetoresistance modulation at room temperature, however, for long channel lengths. Due to tunneling magnetoresistance and spin transfer torque effects, a much stronger coupling between the spin (magnetization) orientation and charge current is achieved in magnetic tunnel junctions. Magnetic random access memory (MRAM) built on magnetic tunnel junctions is CMOS compatible and possesses all properties needed for future universal memory. Designs of spin-based non-volatile MRAM cells are presented. By means of micromagnetic simulations it is demonstrated that a substantial reduction of the switching time can be achieved. Finally, it is shown that any two arbitrary memory cells from an MRAM array can be used to perform a logic operation. Thus, an intrinsic non-volatile logic-in-memory architecture can be realized.

  18. Silicon spintronics: Progress and challenges

    International Nuclear Information System (INIS)

    Sverdlov, Viktor; Selberherr, Siegfried

    2015-01-01

    Electron spin attracts much attention as an alternative to the electron charge degree of freedom for low-power reprogrammable logic and non-volatile memory applications. Silicon appears to be the perfect material for spin-driven applications. Recent progress and challenges regarding spin-based devices are reviewed. An order of magnitude enhancement of the electron spin lifetime in silicon thin films by shear strain is predicted and its impact on spin transport in SpinFETs is discussed. A relatively weak coupling between spin and effective electric field in silicon allows magnetoresistance modulation at room temperature, however, for long channel lengths. Due to tunneling magnetoresistance and spin transfer torque effects, a much stronger coupling between the spin (magnetization) orientation and charge current is achieved in magnetic tunnel junctions. Magnetic random access memory (MRAM) built on magnetic tunnel junctions is CMOS compatible and possesses all properties needed for future universal memory. Designs of spin-based non-volatile MRAM cells are presented. By means of micromagnetic simulations it is demonstrated that a substantial reduction of the switching time can be achieved. Finally, it is shown that any two arbitrary memory cells from an MRAM array can be used to perform a logic operation. Thus, an intrinsic non-volatile logic-in-memory architecture can be realized

  19. High-resolution laser-projection display system using a grating electromechanical system (GEMS)

    Science.gov (United States)

    Brazas, John C.; Kowarz, Marek W.

    2004-01-01

    Eastman Kodak Company has developed a diffractive-MEMS spatial-light modulator for use in printing and display applications, the grating electromechanical system (GEMS). This modulator contains a linear array of pixels capable of high-speed digital operation, high optical contrast, and good efficiency. The device operation is based on deflection of electromechanical ribbons suspended above a silicon substrate by a series of intermediate supports. When electrostatically actuated, the ribbons conform to the supporting substructure to produce a surface-relief phase grating over a wide active region. The device is designed to be binary, switching between a reflective mirror state having suspended ribbons and a diffractive grating state having ribbons in contact with substrate features. Switching times of less than 50 nanoseconds with sub-nanosecond jitter are made possible by reliable contact-mode operation. The GEMS device can be used as a high-speed digital-optical modulator for a laser-projection display system by collecting the diffracted orders and taking advantage of the low jitter. A color channel is created using a linear array of individually addressable GEMS pixels. A two-dimensional image is produced by sweeping the line image of the array, created by the projection optics, across the display screen. Gray levels in the image are formed using pulse-width modulation (PWM). A high-resolution projection display was developed using three 1080-pixel devices illuminated by red, green, and blue laser-color primaries. The result is an HDTV-format display capable of producing stunning still and motion images with very wide color gamut.

  20. Analysis of the multi-strip solution for the ZAZIA project; Analyse de la solution multipiste dans le cadre du projet FAZIA

    Energy Technology Data Exchange (ETDEWEB)

    Chevallier, Eric [Conservatoire National des Artes et Metiers, Centre Regional Associe de Basse Normandie, 6 Bd Marechal Juin, 14050 Caen Cedex (France)

    2007-07-01

    Since 1993 at the Great National Heavy Ion Accelerator (GANIL) at Caen a 4{pi} multidetector called INDRA (Identification de Noyaux et Detection avec Resolutions Accrues) is in use. In 2001 a group of research was formed to develop a new multi-detector called FAZIA (Four-pi A and Z Identification Array) consisting of 10,000 elementary modules. The purpose of FAZIA detector is to study the products of nuclear reactions with a better angular resolution and clarity than today's multi-detectors. The telescopes are made with three layers, two silicone layers and one scintillator layer with photodiodes, which will lie next to the target. Two technological approaches using the silicone layer are studied. The first approach uses the mono cell of silicone and the second approach is the multi-strip silicone. This paper will demonstrate two points. The first point is to show the advantages and disadvantages of the multi-strip silicone configuration. The second point is an experimental phase to show a characteristic from energy resolution of the measure chain. In this part, we also estimated some influences between the channel energy measures. In Project FAZIA, we shall see that the multi-strip silicone detector is a very interesting solution for the future four pi multi-detector. (author)

  1. [A micro-silicon multi-slit spectrophotometer based on MEMS technology].

    Science.gov (United States)

    Hao, Peng; Wu, Yi-Hui; Zhang, Ping; Liu, Yong-Shun; Zhang, Ke; Li, Hai-Wen

    2009-06-01

    A new mini-spectrophotometer was developed by adopting micro-silicon slit and pixel segmentation technology, and this spectrophotometer used photoelectron diode array as the detector by the back-dividing-light way. At first, the effect of the spectral bandwidth on the tested absorbance linear correlation was analyzed. A theory for the design of spectrophotometer's slit was brought forward after discussing the relationships between spectrophotometer spectrum band width and pre-and post-slits width. Then, the integrative micro-silicon-slit, which features small volume, high precision, and thin thickness, was manufactured based on the MEMS technology. Finally, a test was carried on linear absorbance solution by this spectrophotometer. The final result showed that the correlation coefficients were larger than 0.999, which means that the new mini-spectrophotometer with micro-silicon slit pixel segmentation has an obvious linear correlation.

  2. Realization of cantilever arrays for parallel proximity imaging

    International Nuclear Information System (INIS)

    Sarov, Y; Ivanov, Tz; Frank, A; Zoellner, J-P; Nikolov, N; Rangelow, I W

    2010-01-01

    This paper reports on the fabrication and characterisation of self-actuating, and self-sensing cantilever arrays for large-scale parallel surface scanning. Each cantilever is integrated with a sharp silicon tip, a thermal-driven bimorph actuator, and a piezoresistive deflection sensor. Thus, the tip to the sample distance can be controlled individually for each cantilever. A radius of the tips below 10 nm is obtained, which enables nanometre in-plane surface imaging by Angstrom resolution in vertical direction. The fabricated cantilever probe arrays are also applicable for large-area manipulation, sub-10 nm metrology, bottom-up synthesis, high-speed gas analysis, for different bio-applications like recognition of DNA, RNA, or various biomarkers of a single disease, etc.

  3. Geiger-Mode Avalanche Photodiode Arrays Integrated to All-Digital CMOS Circuits.

    Science.gov (United States)

    Aull, Brian

    2016-04-08

    This article reviews MIT Lincoln Laboratory's work over the past 20 years to develop photon-sensitive image sensors based on arrays of silicon Geiger-mode avalanche photodiodes. Integration of these detectors to all-digital CMOS readout circuits enable exquisitely sensitive solid-state imagers for lidar, wavefront sensing, and passive imaging.

  4. Uncooled infrared focal plane array imaging in China

    Science.gov (United States)

    Lei, Shuyu

    2015-06-01

    This article reviews the development of uncooled infrared focal plane array (UIFPA) imaging in China in the past decade. Sensors based on optical or electrical read-out mechanism were developed but the latter dominates the market. In resistive bolometers, VOx and amorphous silicon are still the two major thermal-sensing materials. The specifications of the IRFPA made by different manufactures were collected and compared. Currently more than five Chinese companies and institutions design and fabricate uncooled infrared focal plane array. Some devices have sensitivity as high as 30 mK; the largest array for commercial products is 640×512 and the smallest pixel size is 17 μm. Emphasis is given on the pixel MEMS design, ROIC design, fabrication, and packaging of the IRFPA manufactured by GWIC, especially on design for high sensitivities, low noise, better uniformity and linearity, better stabilization for whole working temperature range, full-digital design, etc.

  5. Scintillation light read-out by thin photodiodes in silicon wells

    CERN Document Server

    Allier, C P; Sarro, P M; Eijk, C W E

    2000-01-01

    Several applications of X-ray and gamma ray imaging detectors, e.g. in medical diagnostics, require millimeter or sub-millimeter spatial resolution and good energy resolution. In order to achieve such features we have proposed a new type of camera, which takes advantage of micromachining technology. It consists of an array of scintillator crystals encapsulated in silicon wells with photodiodes at the bottom. Several parameters of the photodiode need to be optimised: uniformity and efficiency of the light detection, gain, electronic noise and breakdown voltage. In order to evaluate these parameters we have processed 3x3 arrays of 1.8 mm sup 2 , approx 10 mu m thick photodiodes using (1 0 0) wafers etched in a KOH solution. Their optical response at 675 nm wavelength is comparable to that of a 500 mu m thick silicon PIN diode. Their low light detection efficiency is compensated by internal amplification. Several scintillator materials have been positioned in the wells on top of the thin photodiodes, i.e. a 200 ...

  6. Commercial/industrial photovoltaic module and array requirement study. Low-cost solar array project engineering area

    Science.gov (United States)

    1981-01-01

    Design requirements for photovoltaic modules and arrays used in commercial and industrial applications were identified. Building codes and referenced standards were reviewed for their applicability to commercial and industrial photovoltaic array installation. Four general installation types were identified - integral (replaces roofing), direct (mounted on top of roofing), stand-off (mounted away from roofing), and rack (for flat or low slope roofs, or ground mounted). Each of the generic mounting types can be used in vertical wall mounting systems. This implies eight mounting types exist in the commercial/industrial sector. Installation costs were developed for these mounting types as a function of panel/module size. Cost drivers were identified. Studies were performed to identify optimum module shapes and sizes and operating voltage cost drivers. The general conclusion is that there are no perceived major obstacles to the use of photovoltaic modules in commercial/industrial arrays.

  7. Depth-of-interaction measurement in a single-layer crystal array with a single-ended readout using digital silicon photomultiplier

    International Nuclear Information System (INIS)

    Lee, Min Sun; Lee, Jae Sung

    2015-01-01

    We present the first experimental evaluation of a depth-of-interaction (DOI) positron emission tomography (PET) detector using a digital silicon photomultiplier (dSiPM). To measure DOI information from a mono-layer array of scintillation crystals with a single-ended readout, our group has previously proposed and developed a new method based on light spread using triangular reflectors. Since this method relies on measurement of the light distribution, dSiPM, which has a fully digital interface, has several merits for our DOI measurement. The DOI PET detector comprised of a dSiPM sensor (DPC-3200-22-44) coupled with a 14   ×   14 array of 2 mm  ×  2 mm  ×  20 mm unpolished LGSO crystals. All crystals were covered with triangular reflectors. To obtain a good performance of the DOI PET detector, several parameters of detector were selected as a preliminary experiment. Detector performance was evaluated with the selected parameters and the optimal experimental setup, and a DOI measurement was conducted by irradiating the crystal block at five DOI positions spaced at intervals of 4 mm. Maximum-likelihood estimation was employed for DOI positioning and the optimal DOI estimation scheme was also investigated in this study. As a result, the DOI PET detector showed clear crystal identification. The energy resolution (full-width at half-maximum (FWHM)) averaged over all depths was 10.21%  ±  0.15% at 511 keV, and time resolution averaged over all depths was 1198.61   ±   39.70 ps FWHM. The average DOI positioning accuracy for all depths was 74.22%  ±  6.77%, which equates to DOI resolution of 4.67 mm. Energy and DOI resolutions were uniform over all crystal positions except for the back parts of the array. Furthermore, additional simulation studies were conducted to verify the results of our DOI measurement method that is combined with dSiPM technology. In conclusion, our continuous DOI PET detector

  8. MFM observation of spin structures in nano-magnetic-dot arrays fabricated by damascene technique

    International Nuclear Information System (INIS)

    Sato, K.; Yamamoto, T.; Tezuka, T.; Ishibashi, T.; Morishita, Y.; Koukitu, A.; Machida, K.; Yamaoka, T.

    2006-01-01

    Regularly aligned arrays of magnetic nano dots buried in silicon wafers have been fabricated using damascene technique with the help of electron beam lithography. Arrays of square, rectangular, cross-shaped and Y-shaped structures of submicron size have been obtained. Spin distributions have been observed by means of magnetic force microscopy and analyzed by a micromagnetic simulation with Landau-Lifshitz-Gilbert equations. Importance of magnetostatic interactions working between adjacent dots has been elucidated

  9. Ultra-thin silicon (UTSi) on insulator CMOS transceiver and time-division multiplexed switch chips for smart pixel integration

    Science.gov (United States)

    Zhang, Liping; Sawchuk, Alexander A.

    2001-12-01

    We describe the design, fabrication and functionality of two different 0.5 micron CMOS optoelectronic integrated circuit (OEIC) chips based on the Peregrine Semiconductor Ultra-Thin Silicon on insulator technology. The Peregrine UTSi silicon- on-sapphire (SOS) technology is a member of the silicon-on- insulator (SOI) family. The low-loss synthetic sapphire substrate is optically transparent and has good thermal conductivity and coefficient of thermal expansion properties, which meet the requirements for flip-chip bonding of VCSELs and other optoelectronic input-output components. One chip contains transceiver and network components, including four channel high-speed CMOS transceiver modules, pseudo-random bit stream (PRBS) generators, a voltage controlled oscillator (VCO) and other test circuits. The transceiver chips can operate in both self-testing mode and networking mode. An on- chip clock and true-single-phase-clock (TSPC) D-flip-flop have been designed to generate a PRBS at over 2.5 Gb/s for the high-speed transceiver arrays to operate in self-testing mode. In the networking mode, an even number of transceiver chips forms a ring network through free-space or fiber ribbon interconnections. The second chip contains four channel optical time-division multiplex (TDM) switches, optical transceiver arrays, an active pixel detector and additional test devices. The eventual applications of these chips will require monolithic OEICs with integrated optical input and output. After fabrication and testing, the CMOS transceiver array dies will be packaged with 850 nm vertical cavity surface emitting lasers (VCSELs), and metal-semiconductor- metal (MSM) or GaAs p-i-n detector die arrays to achieve high- speed optical interconnections. The hybrid technique could be either wire bonding or flip-chip bonding of the CMOS SOS smart-pixel arrays with arrays of VCSELs and photodetectors onto an optoelectronic chip carrier as a multi-chip module (MCM).

  10. A 240-channel thick film multi-chip module for readout of silicon drift detectors

    International Nuclear Information System (INIS)

    Lynn, D.; Bellwied, R.; Beuttenmueller, R.; Caines, H.; Chen, W.; DiMassimo, D.; Dyke, H.; Elliott, D.; Grau, M.; Hoffmann, G.W.; Humanic, T.; Jensen, P.; Kleinfelder, S.A.; Kotov, I.; Kraner, H.W.; Kuczewski, P.; Leonhardt, B.; Li, Z.; Liaw, C.J.; LoCurto, G.; Middelkamp, P.; Minor, R.; Mazeh, N.; Nehmeh, S.; O'Conner, P.; Ott, G.; Pandey, S.U.; Pruneau, C.; Pinelli, D.; Radeka, V.; Rescia, S.; Rykov, V.; Schambach, J.; Sedlmeir, J.; Sheen, J.; Soja, B.; Stephani, D.; Sugarbaker, E.; Takahashi, J.; Wilson, K.

    2000-01-01

    We have developed a thick film multi-chip module for readout of silicon drift (or low capacitance ∼200 fF) detectors. Main elements of the module include a custom 16-channel NPN-BJT preamplifier-shaper (PASA) and a custom 16-channel CMOS Switched Capacitor Array (SCA). The primary design criteria of the module were the minimizations of the power (12 mW/channel), noise (ENC=490 e - rms), size (20.5 mmx63 mm), and radiation length (1.4%). We will discuss various aspects of the PASA design, with emphasis on the preamplifier feedback network. The SCA is a modification of an integrated circuit that has been previously described [1]; its design features specific to its application in the SVT (Silicon Vertex Tracker in the STAR experiment at RHIC) will be discussed. The 240-channel multi-chip module is a circuit with five metal layers fabricated in thick film technology on a beryllia substrate and contains 35 custom and commercial integrated circuits. It has been recently integrated with silicon drift detectors in both a prototype system assembly for the SVT and a silicon drift array for the E896 experiment at the Alternating Gradient Synchrotron at the Brookhaven National Laboratory. We will discuss features of the module's design and fabrication, report the test results, and emphasize its performance both on the bench and under experimental conditions

  11. III-V-on-Silicon Photonic Integrated Circuits for Spectroscopic Sensing in the 2-4 μm Wavelength Range.

    Science.gov (United States)

    Wang, Ruijun; Vasiliev, Anton; Muneeb, Muhammad; Malik, Aditya; Sprengel, Stephan; Boehm, Gerhard; Amann, Markus-Christian; Šimonytė, Ieva; Vizbaras, Augustinas; Vizbaras, Kristijonas; Baets, Roel; Roelkens, Gunther

    2017-08-04

    The availability of silicon photonic integrated circuits (ICs) in the 2-4 μm wavelength range enables miniature optical sensors for trace gas and bio-molecule detection. In this paper, we review our recent work on III-V-on-silicon waveguide circuits for spectroscopic sensing in this wavelength range. We first present results on the heterogeneous integration of 2.3 μm wavelength III-V laser sources and photodetectors on silicon photonic ICs for fully integrated optical sensors. Then a compact 2 μm wavelength widely tunable external cavity laser using a silicon photonic IC for the wavelength selective feedback is shown. High-performance silicon arrayed waveguide grating spectrometers are also presented. Further we show an on-chip photothermal transducer using a suspended silicon-on-insulator microring resonator used for mid-infrared photothermal spectroscopy.

  12. Silicon nanowire based high brightness, pulsed relativistic electron source

    Directory of Open Access Journals (Sweden)

    Deep Sarkar

    2017-06-01

    Full Text Available We demonstrate that silicon nanowire arrays efficiently emit relativistic electron pulses under irradiation by a high-intensity, femtosecond, and near-infrared laser (∼1018 W/cm2, 25 fs, 800 nm. The nanowire array yields fluxes and charge per bunch that are 40 times higher than those emitted by an optically flat surface, in the energy range of 0.2–0.5 MeV. The flux and charge yields for the nanowires are observed to be directional in nature unlike that for planar silicon. Particle-in-cell simulations establish that such large emission is caused by the enhancement of the local electric fields around a nanowire, which consequently leads to an enhanced absorption of laser energy. We show that the high-intensity contrast (ratio of picosecond pedestal to femtosecond peak of the laser pulse (10−9 is crucial to this large yield. We extend the notion of surface local-field enhancement, normally invoked in low-order nonlinear optical processes like second harmonic generation, optical limiting, etc., to ultrahigh laser intensities. These electron pulses, expectedly femtosecond in duration, have potential application in imaging, material modification, ultrafast dynamics, terahertz generation, and fast ion sources.

  13. Fibre Coupled Photonic Crystal Cavity Arrays on Transparent Substrates for Spatially Resolved Sensing

    Directory of Open Access Journals (Sweden)

    Mark G. Scullion

    2014-11-01

    Full Text Available We introduce a photonic crystal cavity array realised in a silicon thin film and placed on polydimethlysiloxane (PDMS as a new platform for the in-situ sensing of biomedical processes. Using tapered optical fibres, we show that multiple independent cavities within the same waveguide can be excited and their resonance wavelength determined from camera images without the need for a spectrometer. The cavity array platform combines sensing as a function of location with sensing as a function of time.

  14. Radiation damage studies for the D0 silicon detector

    International Nuclear Information System (INIS)

    Lehner, F.

    2004-01-01

    We report on irradiation studies performed on spare production silicon detector modules for the current D0 silicon detector. The lifetime expectations due to radiation damage effects of the existing silicon detector are reviewed. A new upgrade project was started with the goal of a complete replacement of the existing silicon detector. In that context, several investigations on the radiation hardness of new prototype silicon microstrip detectors were carried out. The irradiation on different detector types was performed with 10 MeV protons up to fluences of 10 14 p/cm 2 at the J.R. Mcdonald Laboratory at Kansas State University. The flux calibration was carefully checked using different normalization techniques. As a result, we observe roughly 40-50% less radiation damage in silicon for 10 MeV p exposure than it is expected by the predicted NIEL scaling

  15. Ultradense, Deep Subwavelength Nanowire Array Photovoltaics As Engineered Optical Thin Films

    KAUST Repository

    Tham, Douglas

    2010-11-10

    A photovoltaic device comprised of an array of 20 nm wide, 32 nm pitch array of silicon nanowires is modeled as an optical material. The nanowire array (NWA) has characteristic device features that are deep in the subwavelength regime for light, which permits a number of simplifying approximations. Using photocurrent measurements as a probe of the absorptance, we show that the NWA optical properties can be accurately modeled with rigorous coupled-wave analysis. The densely structured NWAs behave as homogeneous birefringent materials into the ultraviolet with effective optical properties that are accurately modeled using the dielectric functions of bulk Si and SiO 2, coupled with a physical model for the NWA derived from ellipsometry and transmission electron microscopy. © 2010 American Chemical Society.

  16. Silicon materials outlook study for 1980-85 calendar years

    Energy Technology Data Exchange (ETDEWEB)

    Costogue, E.; Ferber, R.; Hasbach, W.; Pellin, R.; Yaws, C.

    1979-11-01

    Photovoltaic solar cell arrays converting solar energy into electrical energy can become a cost-effective, alternative energy source provided that an adequate supply of low-priced solar cell materials and automated fabrication techniques are available. Presently, the photovoltaic industry is dependent upon polycrystalline silicon which is produced primarily for the discrete semiconductor device industry. This dependency is expected to continue until DOE-sponsored new technology developments mature. Recent industry forecasts have predicted a limited supply of polycrystalline silicon material and a shortage could occur in the early 80's. The Jet Propulsion Laboratory's Technology Development and Application Lead Center formed an ad hoc committee at JPL, SERI and consultant personnel to conduct interviews with key polycrystalline manufacturers and a large cross-section of single crystal ingot growers and wafer manufacturers. Industry consensus and conclusions reached from the analysis of the data obtained by the committee are reported. The highlight of the study is that there is a high probability of polycrystalline silicon shortage by the end of CY 1982 and a strong seller's market after CY 1981 which will foster price competition for available silicon.

  17. Progress in the Development of SERS-Active Substrates Based on Metal-Coated Porous Silicon.

    Science.gov (United States)

    Bandarenka, Hanna V; Girel, Kseniya V; Zavatski, Sergey A; Panarin, Andrei; Terekhov, Sergei N

    2018-05-21

    The present work gives an overview of the developments in surface-enhanced Raman scattering (SERS) with metal-coated porous silicon used as an active substrate. We focused this review on the research referenced to SERS-active materials based on porous silicon, beginning from the patent application in 2002 and enclosing the studies of this year. Porous silicon and metal deposition technologies are discussed. Since the earliest studies, a number of fundamentally different plasmonic nanostructures including metallic dendrites, quasi-ordered arrays of metallic nanoparticles (NPs), and metallic nanovoids have been grown on porous silicon, defined by the morphology of this host material. SERS-active substrates based on porous silicon have been found to combine a high and well-reproducible signal level, storage stability, cost-effective technology and handy use. They make it possible to identify and study many compounds including biomolecules with a detection limit varying from milli- to femtomolar concentrations. The progress reviewed here demonstrates the great prospects for the extensive use of the metal-coated porous silicon for bioanalysis by SERS-spectroscopy.

  18. Progress in the Development of SERS-Active Substrates Based on Metal-Coated Porous Silicon

    Directory of Open Access Journals (Sweden)

    Hanna V. Bandarenka

    2018-05-01

    Full Text Available The present work gives an overview of the developments in surface-enhanced Raman scattering (SERS with metal-coated porous silicon used as an active substrate. We focused this review on the research referenced to SERS-active materials based on porous silicon, beginning from the patent application in 2002 and enclosing the studies of this year. Porous silicon and metal deposition technologies are discussed. Since the earliest studies, a number of fundamentally different plasmonic nanostructures including metallic dendrites, quasi-ordered arrays of metallic nanoparticles (NPs, and metallic nanovoids have been grown on porous silicon, defined by the morphology of this host material. SERS-active substrates based on porous silicon have been found to combine a high and well-reproducible signal level, storage stability, cost-effective technology and handy use. They make it possible to identify and study many compounds including biomolecules with a detection limit varying from milli- to femtomolar concentrations. The progress reviewed here demonstrates the great prospects for the extensive use of the metal-coated porous silicon for bioanalysis by SERS-spectroscopy.

  19. Implementation of the first student-designed PV array in Canada

    International Nuclear Information System (INIS)

    Hadlock, C.; DeLoyde, J.; Dhir, T.

    2004-01-01

    This paper is a culmination of a 2-year project involving students, faculty, staff member, and private industry. Solar Technology Education Project (STEP) became the first student-led group to successfully install a 36-panel photovoltaic (PV) array on a Canadian University campus. The fundraising, design, and assembly of the PV array was entirely student driven. The project was completed in January 2004 with the installation of a 2 kW photovoltaic grid-tied array mounted to the roof of the University of Waterloo's Federation Hall, the largest student-run pub in North America. The photovoltaic array was a demonstration project to raise awareness about solar technology and the need for energy efficiency in buildings. It took two years to complete the project, which was implemented in three phases. The first phase was aimed at raising the required capital. The second phase included design and fabrication of the array. The third phase, still ongoing today, is the community outreach phase, which involves educating the surrounding communities about the project, solar technology, and the role of individuals in combating global warming. This paper examines the steps required for the implementation of a successful educational photovoltaic project, using the students' experience as a roadmap. A section highlighting what's next for STEP is also presented as the students attempt to build on the momentum from the project. The aim is to launch a solar thermal project on another University of Waterloo building to move one step closer to the ultimate goal of a sustainable campus

  20. Transdermal Delivery of siRNA through Microneedle Array

    Science.gov (United States)

    Deng, Yan; Chen, Jiao; Zhao, Yi; Yan, Xiaohui; Zhang, Li; Choy, Kwongwai; Hu, Jun; Sant, Himanshu J.; Gale, Bruce K.; Tang, Tao

    2016-02-01

    Successful development of siRNA therapies has significant potential for the treatment of skin conditions (alopecia, allergic skin diseases, hyperpigmentation, psoriasis, skin cancer, pachyonychia congenital) caused by aberrant gene expression. Although hypodermic needles can be used to effectively deliver siRNA through the stratum corneum, the major challenge is that this approach is painful and the effects are restricted to the injection site. Microneedle arrays may represent a better way to deliver siRNAs across the stratum corneum. In this study, we evaluated for the first time the ability of the solid silicon microneedle array for punching holes to deliver cholesterol-modified housekeeping gene (Gapdh) siRNA to the mouse ear skin. Treating the ear with microneedles showed permeation of siRNA in the skin and could reduce Gapdh gene expression up to 66% in the skin without accumulation in the major organs. The results showed that microneedle arrays could effectively deliver siRNA to relevant regions of the skin noninvasively.

  1. Coded aperture subreflector array for high resolution radar imaging

    Science.gov (United States)

    Lynch, Jonathan J.; Herrault, Florian; Kona, Keerti; Virbila, Gabriel; McGuire, Chuck; Wetzel, Mike; Fung, Helen; Prophet, Eric

    2017-05-01

    HRL Laboratories has been developing a new approach for high resolution radar imaging on stationary platforms. High angular resolution is achieved by operating at 235 GHz and using a scalable tile phased array architecture that has the potential to realize thousands of elements at an affordable cost. HRL utilizes aperture coding techniques to minimize the size and complexity of the RF electronics needed for beamforming, and wafer level fabrication and integration allow tiles containing 1024 elements to be manufactured with reasonable costs. This paper describes the results of an initial feasibility study for HRL's Coded Aperture Subreflector Array (CASA) approach for a 1024 element micromachined antenna array with integrated single-bit phase shifters. Two candidate electronic device technologies were evaluated over the 170 - 260 GHz range, GaN HEMT transistors and GaAs Schottky diodes. Array structures utilizing silicon micromachining and die bonding were evaluated for etch and alignment accuracy. Finally, the overall array efficiency was estimated to be about 37% (not including spillover losses) using full wave array simulations and measured device performance, which is a reasonable value at 235 GHz. Based on the measured data we selected GaN HEMT devices operated passively with 0V drain bias due to their extremely low DC power dissipation.

  2. A novel scalable manufacturing process for the production of hydrogel-forming microneedle arrays.

    Science.gov (United States)

    Lutton, Rebecca E M; Larrañeta, Eneko; Kearney, Mary-Carmel; Boyd, Peter; Woolfson, A David; Donnelly, Ryan F

    2015-10-15

    A novel manufacturing process for fabricating microneedle arrays (MN) has been designed and evaluated. The prototype is able to successfully produce 14×14 MN arrays and is easily capable of scale-up, enabling the transition from laboratory to industry and subsequent commercialisation. The method requires the custom design of metal MN master templates to produce silicone MN moulds using an injection moulding process. The MN arrays produced using this novel method was compared with centrifugation, the traditional method of producing aqueous hydrogel-forming MN arrays. The results proved that there was negligible difference between either methods, with each producing MN arrays with comparable quality. Both types of MN arrays can be successfully inserted in a skin simulant. In both cases the insertion depth was approximately 60% of the needle length and the height reduction after insertion was in both cases approximately 3%. Copyright © 2015 Elsevier B.V. All rights reserved.

  3. Single-Event Effects in Silicon Carbide Power Devices

    Science.gov (United States)

    Lauenstein, Jean-Marie; Casey, Megan C.; LaBel, Kenneth A.; Ikpe, Stanley; Topper, Alyson D.; Wilcox, Edward P.; Kim, Hak; Phan, Anthony M.

    2015-01-01

    This report summarizes the NASA Electronic Parts and Packaging Program Silicon Carbide Power Device Subtask efforts in FY15. Benefits of SiC are described and example NASA Programs and Projects desiring this technology are given. The current status of the radiation tolerance of silicon carbide power devices is given and paths forward in the effort to develop heavy-ion single-event effect hardened devices indicated.

  4. Selective growth of carbon nanotube on silicon substrates

    Institute of Scientific and Technical Information of China (English)

    ZOU Xiao-ping; H. ABE; T. SHIMIZU; A. ANDO; H. TOKUMOT; ZHU Shen-ming; ZHOU Hao-shen

    2006-01-01

    The carbon nanotube (CNT) growth of iron oxide-deposited trench-patterns and the locally-ordered CNT arrays on silicon substrate were achieved by simple thermal chemical vapor deposition(STCVD) of ethanol vapor. The CNTs were uniformly synthesized with good selectivity on trench-patterned silicon substrates. This fabrication process is compatible with currently used semiconductor-processing technologies,and the carbon-nanotube fabrication process can be widely applied for the development of electronic devices using carbon-nanotube field emitters as cold cathodes and can revolutionize the area of field-emitting electronic devices. The site-selective growth of CNT from an iron oxide nanoparticle catalyst patterned were also achieved by drying-mediated self-assembly technique. The present method offers a simple and cost-effective method to grow carbon nanotubes with self-assembled patterns.

  5. A monolithic silicon detector telescope

    International Nuclear Information System (INIS)

    Cardella, G.; Amorini, F.; Cabibbo, M.; Di Pietro, A.; Fallica, G.; Franzo, G.; Figuera, P.; Papa, M.; Pappalardo, G.; Percolla, G.; Priolo, F.; Privitera, V.; Rizzo, F.; Tudisco, S.

    1996-01-01

    An ultrathin silicon detector (1 μm) thick implanted on a standard 400 μm Si-detector has been built to realize a monolithic telescope detector for simultaneous charge and energy determination of charged particles. The performances of the telescope have been tested using standard alpha sources and fragments emitted in nuclear reactions with different projectile-target colliding systems. An excellent charge resolution has been obtained for low energy (less than 5 MeV) light nuclei. A multi-array lay-out of such detectors is under construction to charge identify the particles emitted in reactions induced by low energy radioactive beams. (orig.)

  6. A 4×8-Gbps VCSEL array driver ASIC and integration with a custom array transmitter module for the LHC front-end transmission

    International Nuclear Information System (INIS)

    Guo, Di; Liu, Chonghan; Chen, Jinghong; Chramowicz, John; Gong, Datao; He, Huiqin; Hou, Suen; Liu, Tiankuan; Prosser, Alan; Teng, Ping-Kun; Xiang, Annie C.; Xiao, Le; Ye, Jingbo

    2016-01-01

    This paper describes the design, fabrication and experiment results of a 4×8-Gbps Vertical-Cavity Surface-Emitting Laser (VCSEL) array driver ASIC with the adjustable active-shunt peaking technique and the novel balanced output structure under the Silicon-on-Sapphire (SOS) process, and a custom array optical transmitter module, featuring a compact size of 10 mm×15 mm×5.3 mm. Both the array driver ASIC and the module have been fully tested after integration as a complete parallel transmitter. Optical eye diagram of each channel passes the eye mask at 8 Gbps/ch with adjacent channel working simultaneously with a power consumption of 150 mW/ch. The optical transmission of Bit-Error Rate (BER) less than 10E-12 is achieved at an aggregated data rate of 4×8-Gbps. - Highlights: • An anode-driven VCSEL Array driver ASIC with the configurable active-shunt peaking technique in pre-driving stages. • A novel full-differential balanced output structure is used to minimize the noise and crosstalk from the power. • A custom array optical transmitter module with custom low-cost reliable alignment method.

  7. A 4×8-Gbps VCSEL array driver ASIC and integration with a custom array transmitter module for the LHC front-end transmission

    Energy Technology Data Exchange (ETDEWEB)

    Guo, Di [Department of Physics, Southern Methodist University, Dallas, TX 75275 (United States); State Key Laboratory of Particle Detection and Electronics, University of Science and Technology of China, Hefei Anhui 230026 (China); Liu, Chonghan [Department of Physics, Southern Methodist University, Dallas, TX 75275 (United States); Chen, Jinghong [Department of Electrical and Computer Engineering, University of Houston, Houston, TX 77004 (United States); Chramowicz, John [Real-Time Systems Engineering Department, Fermi National Laboratory, Batavia, IL 60510 (United States); Gong, Datao [Department of Physics, Southern Methodist University, Dallas, TX 75275 (United States); He, Huiqin [Department of Physics, Southern Methodist University, Dallas, TX 75275 (United States); Shenzhen Polytechnic, Shenzhen 518055 (China); Hou, Suen [Institute of Physics, Academia Sinica, Nangang 11529, Taipei, Taiwan (China); Liu, Tiankuan [Department of Physics, Southern Methodist University, Dallas, TX 75275 (United States); Prosser, Alan [Real-Time Systems Engineering Department, Fermi National Laboratory, Batavia, IL 60510 (United States); Teng, Ping-Kun [Institute of Physics, Academia Sinica, Nangang 11529, Taipei, Taiwan (China); Xiang, Annie C. [Department of Physics, Southern Methodist University, Dallas, TX 75275 (United States); Xiao, Le [Department of Physics, Southern Methodist University, Dallas, TX 75275 (United States); Department of Physics, Central China Normal University, Wuhan, Hubei 430079 (China); Ye, Jingbo [Department of Physics, Southern Methodist University, Dallas, TX 75275 (United States)

    2016-09-21

    This paper describes the design, fabrication and experiment results of a 4×8-Gbps Vertical-Cavity Surface-Emitting Laser (VCSEL) array driver ASIC with the adjustable active-shunt peaking technique and the novel balanced output structure under the Silicon-on-Sapphire (SOS) process, and a custom array optical transmitter module, featuring a compact size of 10 mm×15 mm×5.3 mm. Both the array driver ASIC and the module have been fully tested after integration as a complete parallel transmitter. Optical eye diagram of each channel passes the eye mask at 8 Gbps/ch with adjacent channel working simultaneously with a power consumption of 150 mW/ch. The optical transmission of Bit-Error Rate (BER) less than 10E-12 is achieved at an aggregated data rate of 4×8-Gbps. - Highlights: • An anode-driven VCSEL Array driver ASIC with the configurable active-shunt peaking technique in pre-driving stages. • A novel full-differential balanced output structure is used to minimize the noise and crosstalk from the power. • A custom array optical transmitter module with custom low-cost reliable alignment method.

  8. Site-controlled fabrication of silicon nanotips by indentation-induced selective etching

    Science.gov (United States)

    Jin, Chenning; Yu, Bingjun; Liu, Xiaoxiao; Xiao, Chen; Wang, Hongbo; Jiang, Shulan; Wu, Jiang; Liu, Huiyun; Qian, Linmao

    2017-12-01

    In the present study, the indentation-induced selective etching approach is proposed to fabricate site-controlled pyramidal nanotips on Si(100) surface. Without any masks, the site-controlled nanofabrication can be realized by nanoindentation and post etching in potassium hydroxide (KOH) solution. The effect of indentation force and etching time on the formation of pyramidal nanotips was investigated. It is found that the height and radius of the pyramidal nanotips increase with the indentation force or etching time, while long-time etching can lead to the collapse of the tips. The formation of pyramidal tips is ascribed to the anisotropic etching of silicon and etching stop of (111) crystal planes in KOH aqueous solution. The capability of this fabrication method was further demonstrated by producing various tip arrays on silicon surface by selective etching of the site-controlled indent patterns, and the maximum height difference of these tips is less than 10 nm. The indentation-induced selective etching provides a new strategy to fabricate well site-controlled tip arrays for multi-probe SPM system, Si nanostructure-based sensors and high-quality information storage.

  9. Optically Controlled Reconfigurable Antenna Array Based on E-Shaped Elements

    Directory of Open Access Journals (Sweden)

    Arismar Cerqueira Sodré Junior

    2014-01-01

    Full Text Available This work presents the development of optically controlled reconfigurable antenna arrays. They are based on two patch elements with E-shaped slots, a printed probe, and a photoconductive switch made from an intrinsic silicon die. Numerical simulations and experiments have been shown to be in agreement, and both demonstrate that the frequency response of the antenna arrays can be efficiently reconfigured over two different frequency ISM bands, namely, 2.4 and 5 GHz. A measured gain of 12.5 dBi has been obtained through the use of two radiating elements printed in a low-cost substrate and a dihedral corner reflector.

  10. SiO{sub 2} nanodot arrays using functionalized block copolymer templates and selective silylation

    Energy Technology Data Exchange (ETDEWEB)

    Kim, Su Min; Ku, Se Jin; Kim, Jin-Baek, E-mail: kjb@kaist.ac.kr [Department of Chemistry, Korea Advanced Institute of Science and Technology (KAIST), 373-1, Guseong-Dong, Yuseong-Gu, Daejeon, 305-701 (Korea, Republic of)

    2010-06-11

    Silicon oxide nanodot arrays were fabricated using functionalized block copolymer templates and selective silylation. A polystyrene-b-poly(acrylic acid/acrylic anhydride) (PS-b-PAA/AN) thin film containing spherical nanodomains was used as a template to build nanoscopic silica structures. A PS-b-PAA/AN thin film was prepared by acid-catalyzed thermal deprotection of polystyrene-b-poly(tert-butyl acrylate) on an SU-8 resist film containing a photoacid generator. This resulting film has excellent solvent and thermal resistance due to crosslinked anhydride linkages in carboxyl-functionalized PAA/AN block domains. Silicon was introduced by spin-spraying of hexamethyldisilazane (HMDS) over the entire surface of a self-assembled PS-b-PAA/AN thin film. HMDS was selectively reacted with carboxylic acid groups in spherical domains of a PAA/AN block. SiO{sub 2} nanodot arrays were generated by oxygen reactive ion etching.

  11. The Development of High-Density Vertical Silicon Nanowires and Their Application in a Heterojunction Diode

    Directory of Open Access Journals (Sweden)

    Wen-Chung Chang

    2016-06-01

    Full Text Available Vertically aligned p-type silicon nanowire (SiNW arrays were fabricated through metal-assisted chemical etching (MACE of Si wafers. An indium tin oxide/indium zinc oxide/silicon nanowire (ITO/IZO/SiNW heterojunction diode was formed by depositing ITO and IZO thin films on the vertically aligned SiNW arrays. The structural and electrical properties of the resulting ITO/IZO/SiNW heterojunction diode were characterized by field emission scanning electron microscopy (FE-SEM, X-ray diffraction (XRD, and current−voltage (I−V measurements. Nonlinear and rectifying I−V properties confirmed that a heterojunction diode was successfully formed in the ITO/IZO/SiNW structure. The diode had a well-defined rectifying behavior, with a rectification ratio of 550.7 at 3 V and a turn-on voltage of 2.53 V under dark conditions.

  12. Metal oxide nanorod arrays on monolithic substrates

    Energy Technology Data Exchange (ETDEWEB)

    Gao, Pu-Xian; Guo, Yanbing; Ren, Zheng

    2018-01-02

    A metal oxide nanorod array structure according to embodiments disclosed herein includes a monolithic substrate having a surface and multiple channels, an interface layer bonded to the surface of the substrate, and a metal oxide nanorod array coupled to the substrate surface via the interface layer. The metal oxide can include ceria, zinc oxide, tin oxide, alumina, zirconia, cobalt oxide, and gallium oxide. The substrate can include a glass substrate, a plastic substrate, a silicon substrate, a ceramic monolith, and a stainless steel monolith. The ceramic can include cordierite, alumina, tin oxide, and titania. The nanorod array structure can include a perovskite shell, such as a lanthanum-based transition metal oxide, or a metal oxide shell, such as ceria, zinc oxide, tin oxide, alumina, zirconia, cobalt oxide, and gallium oxide, or a coating of metal particles, such as platinum, gold, palladium, rhodium, and ruthenium, over each metal oxide nanorod. Structures can be bonded to the surface of a substrate and resist erosion if exposed to high velocity flow rates.

  13. Comparative Performance and Model Agreement of Three Common Photovoltaic Array Configurations.

    Science.gov (United States)

    Boyd, Matthew T

    2018-02-01

    Three grid-connected monocrystalline silicon arrays on the National Institute of Standards and Technology (NIST) campus in Gaithersburg, MD have been instrumented and monitored for 1 yr, with only minimal gaps in the data sets. These arrays range from 73 kW to 271 kW, and all use the same module, but have different tilts, orientations, and configurations. One array is installed facing east and west over a parking lot, one in an open field, and one on a flat roof. Various measured relationships and calculated standard metrics have been used to compare the relative performance of these arrays in their different configurations. Comprehensive performance models have also been created in the modeling software pvsyst for each array, and its predictions using measured on-site weather data are compared to the arrays' measured outputs. The comparisons show that all three arrays typically have monthly performance ratios (PRs) above 0.75, but differ significantly in their relative output, strongly correlating to their operating temperature and to a lesser extent their orientation. The model predictions are within 5% of the monthly delivered energy values except during the winter months, when there was intermittent snow on the arrays, and during maintenance and other outages.

  14. A Si nanocube array polarizer

    Science.gov (United States)

    Chen, Linghua; Jiang, Yingjie; Xing, Li; Yao, Jun

    2017-10-01

    We have proposed a full dielectric (silicon) nanocube array polarizer based on a silicon dioxide substrate. Each polarization unit column includes a plurality of equal spaced polarization units. By optimizing the length, the width, the height of the polarization units and the center distance of adjacent polarization unit (x direction and y direction), an extinction ratio (ER) of higher than 25dB was obtained theoretically when the incident light wavelength is 1550nm. while for applications of most polarization optical elements, ER above 10dB is enough. With this condition, the polarizer we designed can work in a wide wavelength range from 1509.31nm to 1611.51nm. Compared with the previous polarizer, we have introduced a polarizer which is a full dielectric device, which solves the problems of low efficiency caused by Ohmic loss and weak coupling. Furthermore, compared with the existing optical polarizers, our polarizer has the advantages of thin thickness, small size, light weight, and low processing difficulty, which is in line with the future development trend of optical elements.

  15. IR and UV laser-induced morphological changes in silicon surface under oxygen atmosphere

    Energy Technology Data Exchange (ETDEWEB)

    Jimenez-Jarquin, J.; Fernandez-Guasti, M.; Haro-Poniatowski, E.; Hernandez-Pozos, J.L. [Laboratorio de Optica Cuantica, Departamento de Fisica, Universidad Autonoma Metropolitana-Iztapalapa, Av. San Rafael Atlixco No. 186, Col. Vicentina, C.P. 09340, Mexico D.F. (Mexico)

    2005-08-01

    We irradiated silicon (100) wafers with IR (1064 nm) and UV (355 nm) nanosecond laser pulses with energy densities within the ablation regime and used scanning electron microscopy to analyze the morphological changes induced on the Si surface. The changes in the wafer morphology depend both on the incident radiation wavelength and the environmental atmosphere. We have patterned Si surfaces with a single focused laser spot and, in doing the experiments with IR or UV this reveals significant differences in the initial surface cracking and pattern formation, however if the experiment is carried out in O{sub 2} the final result is an array of microcones. We also employed a random scanning technique to irradiate the silicon wafer over large areas, in this case the microstructure patterns consist of a ''semi-ordered'' array of micron-sized cones. (copyright 2005 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  16. A tunable sub-100 nm silicon nanopore array with an AAO membrane mask: reducing unwanted surface etching by introducing a PMMA interlayer

    Science.gov (United States)

    Lim, Namsoo; Pak, Yusin; Kim, Jin Tae; Hwang, Youngkyu; Lee, Ryeri; Kumaresan, Yogeenth; Myoung, Nosoung; Ko, Heung Cho; Jung, Gun Young

    2015-08-01

    Highly ordered silicon (Si) nanopores with a tunable sub-100 nm diameter were fabricated by a CF4 plasma etching process using an anodic aluminum oxide (AAO) membrane as an etching mask. To enhance the conformal contact of the AAO membrane mask to the underlying Si substrate, poly(methyl methacrylate) (PMMA) was spin-coated on top of the Si substrate prior to the transfer of the AAO membrane. The AAO membrane mask was fabricated by two-step anodization and subsequent removal of the aluminum support and the barrier layer, which was then transferred to the PMMA-coated Si substrate. Contact printing was performed on the sample with a pressure of 50 psi and a temperature of 120 °C to make a conformal contact of the AAO membrane mask to the Si substrate. The CF4 plasma etching was conducted to transfer nanopores onto the Si substrate through the PMMA interlayer. The introduced PMMA interlayer prevented unwanted surface etching of the Si substrate by eliminating the etching ions and radicals bouncing at the gap between the mask and the substrate, resulting in a smooth Si nanopore array.Highly ordered silicon (Si) nanopores with a tunable sub-100 nm diameter were fabricated by a CF4 plasma etching process using an anodic aluminum oxide (AAO) membrane as an etching mask. To enhance the conformal contact of the AAO membrane mask to the underlying Si substrate, poly(methyl methacrylate) (PMMA) was spin-coated on top of the Si substrate prior to the transfer of the AAO membrane. The AAO membrane mask was fabricated by two-step anodization and subsequent removal of the aluminum support and the barrier layer, which was then transferred to the PMMA-coated Si substrate. Contact printing was performed on the sample with a pressure of 50 psi and a temperature of 120 °C to make a conformal contact of the AAO membrane mask to the Si substrate. The CF4 plasma etching was conducted to transfer nanopores onto the Si substrate through the PMMA interlayer. The introduced PMMA interlayer

  17. Generation of miniaturized planar ecombinant antibody arrays using a microcantilever-based printer

    Science.gov (United States)

    Petersson, Linn; Berthet Duroure, Nathalie; Auger, Angèle; Dexlin-Mellby, Linda; Borrebaeck, Carl AK; Ait Ikhlef, Ali; Wingren, Christer

    2014-07-01

    Miniaturized (Ø 10 μm), multiplexed (>5-plex), and high-density (>100 000 spots cm-2) antibody arrays will play a key role in generating protein expression profiles in health and disease. However, producing such antibody arrays is challenging, and it is the type and range of available spotters which set the stage. This pilot study explored the use of a novel microspotting tool, BioplumeTM—consisting of an array of micromachined silicon cantilevers with integrated microfluidic channels—to produce miniaturized, multiplexed, and high-density planar recombinant antibody arrays for protein expression profiling which targets crude, directly labelled serum. The results demonstrated that 16-plex recombinant antibody arrays could be produced—based on miniaturized spot features (78.5 um2, Ø 10 μm) at a 7-125-times increased spot density (250 000 spots cm-2), interfaced with a fluorescent-based read-out. This prototype platform was found to display adequate reproducibility (spot-to-spot) and an assay sensitivity in the pM range. The feasibility of the array platform for serum protein profiling was outlined.

  18. Generation of miniaturized planar ecombinant antibody arrays using a microcantilever-based printer

    International Nuclear Information System (INIS)

    Petersson, Linn; Dexlin-Mellby, Linda; Borrebaeck, Carl AK; Wingren, Christer; Berthet Duroure, Nathalie; Auger, Angèle; Ait Ikhlef, Ali

    2014-01-01

    Miniaturized (Ø 10 μm), multiplexed (>5-plex), and high-density (>100 000 spots cm −2 ) antibody arrays will play a key role in generating protein expression profiles in health and disease. However, producing such antibody arrays is challenging, and it is the type and range of available spotters which set the stage. This pilot study explored the use of a novel microspotting tool, Bioplume TM —consisting of an array of micromachined silicon cantilevers with integrated microfluidic channels—to produce miniaturized, multiplexed, and high-density planar recombinant antibody arrays for protein expression profiling which targets crude, directly labelled serum. The results demonstrated that 16-plex recombinant antibody arrays could be produced—based on miniaturized spot features (78.5 um 2 , Ø 10 μm) at a 7–125-times increased spot density (250 000 spots cm −2 ), interfaced with a fluorescent-based read-out. This prototype platform was found to display adequate reproducibility (spot-to-spot) and an assay sensitivity in the pM range. The feasibility of the array platform for serum protein profiling was outlined. (paper)

  19. Micromachined silicon seismic accelerometer development

    Energy Technology Data Exchange (ETDEWEB)

    Barron, C.C.; Fleming, J.G.; Montague, S. [and others

    1996-08-01

    Batch-fabricated silicon seismic transducers could revolutionize the discipline of seismic monitoring by providing inexpensive, easily deployable sensor arrays. Our ultimate goal is to fabricate seismic sensors with sensitivity and noise performance comparable to short-period seismometers in common use. We expect several phases of development will be required to accomplish that level of performance. Traditional silicon micromachining techniques are not ideally suited to the simultaneous fabrication of a large proof mass and soft suspension, such as one needs to achieve the extreme sensitivities required for seismic measurements. We have therefore developed a novel {open_quotes}mold{close_quotes} micromachining technology that promises to make larger proof masses (in the 1-10 mg range) possible. We have successfully integrated this micromolding capability with our surface-micromachining process, which enables the formation of soft suspension springs. Our calculations indicate that devices made in this new integrated technology will resolve down to at least sub-{mu}G signals, and may even approach the 10{sup -10} G/{radical}Hz acceleration levels found in the low-earth-noise model.

  20. Polymeric microbead arrays for microfluidic applications

    International Nuclear Information System (INIS)

    Thompson, Jason A; Du, Xiaoguang; Grogan, Joseph M; Schrlau, Michael G; Bau, Haim H

    2010-01-01

    Microbeads offer a convenient and efficient means of immobilizing biomolecules and capturing target molecules of interest in microfluidic immunoassay devices. In this study, hot embossing is used to form wells enabling the direct incorporation of a microbead array in a plastic substrate. We demonstrate two techniques to populate the well array with beads. In the first case, encoded beads with various functionalizations are distributed randomly among the wells and their position is registered by reading their encoding. Alternatively, beads are controllably placed at predetermined positions and decoding is not required. The random placement technique is demonstrated with two functionalized bead types that are distributed among the wells and then decoded to register their locations. The alternative, deliberate placement technique is demonstrated by controllably placing magnetic beads at selected locations in the array using a magnetic probe. As a proof of concept to illustrate the biosensing capability of the randomly assembled array, an on-chip, bead-based immunoassay is employed to detect the inflammatory protein Interleukin-8. The principle of the assay, however, can be extended to detect multiple targets simultaneously. Our method eliminates the need to interface silicon components with plastic devices to form microarrays containing individually addressable beads. This has the potential to reduce the cost and complexity of lab-on-chip devices for medical diagnosis, food and water quality inspection, and environmental monitoring

  1. Design and Deployment of a Multichroic Polarimeter Array on the Atacama Cosmology Telescope

    Science.gov (United States)

    Datta, R.; Austermann, J.; Beall, J. A.; Becker, D.; Coughlin, K. P.; Duff, S. M.; Gallardo, P.A.; Grace, E.; Hasselfield, M.; Henderson, S. W.; hide

    2016-01-01

    We present the design and the preliminary on-sky performance with respect to beams and pass bands of a multichroic polarimeter array covering the 90 and 146 GHz cosmic microwave background bands and its enabling broad-band optical system recently deployed on the Atacama Cosmology Telescope (ACT). The constituent pixels are feedhorn-coupled multichroic polarimeters fabricated at NIST. This array is coupled to the ACT telescope via a set of three silicon lenses incorporating novel broad-band metamaterial anti-reflection coatings. This receiver represents the first multichroic detector array deployed for a CMB experiment and paves the way for the extensive use of multichroic detectors and broad-band optical systems in the next generation of CMB experiments.

  2. Design and Deployment of a Multichroic Polarimeter Array on the Atacama Cosmology Telescope

    Science.gov (United States)

    Datta, R.; Austermann, J.; Beall, J. A.; Becker, D.; Coughlin, K. P.; Duff, S. M.; Gallardo, P. A.; Grace, E.; Hasselfield, M.; Henderson, S. W.; Hilton, G. C.; Ho, S. P.; Hubmayr, J.; Koopman, B. J.; Lanen, J. V.; Li, D.; McMahon, J.; Munson, C. D.; Nati, F.; Niemack, M. D.; Page, L.; Pappas, C. G.; Salatino, M.; Schmitt, B. L.; Schillaci, A.; Simon, S. M.; Staggs, S. T.; Stevens, J. R.; Vavagiakis, E. M.; Ward, J. T.; Wollack, E. J.

    2016-08-01

    We present the design and the preliminary on-sky performance with respect to beams and passbands of a multichroic polarimeter array covering the 90 and 146 GHz cosmic microwave background bands and its enabling broad-band optical system recently deployed on the Atacama Cosmology Telescope (ACT). The constituent pixels are feedhorn-coupled multichroic polarimeters fabricated at NIST. This array is coupled to the ACT telescope via a set of three silicon lenses incorporating novel broad-band metamaterial anti-reflection coatings. This receiver represents the first multichroic detector array deployed for a CMB experiment and paves the way for the extensive use of multichroic detectors and broad-band optical systems in the next generation of CMB experiments.

  3. Micromachined silicon acoustic delay line with improved structural stability and acoustic directivity for real-time photoacoustic tomography

    Science.gov (United States)

    Cho, Young; Kumar, Akhil; Xu, Song; Zou, Jun

    2017-03-01

    Recent studies have shown that micromachined silicon acoustic delay lines can provide a promising solution to achieve real-time photoacoustic tomography without the need for complex transducer arrays and data acquisition electronics. However, as its length increases to provide longer delay time, the delay line becomes more vulnerable to structural instability due to reduced mechanical stiffness. In addition, the small cross-section area of the delay line results in a large acoustic acceptance angle and therefore poor directivity. To address these two issues, this paper reports the design, fabrication, and testing of a new silicon acoustic delay line enhanced with 3D printed polymer micro linker structures. First, mechanical deformation of the silicon acoustic delay line (with and without linker structures) under gravity was simulated by using finite element method. Second, the acoustic crosstalk and acoustic attenuation caused by the polymer micro linker structures were evaluated with both numerical simulation and ultrasound transmission testing. The result shows that the use of the polymer micro linker structures significantly improves the structural stability of the silicon acoustic delay lines without creating additional acoustic attenuation and crosstalk. In addition, a new tapered design for the input terminal of the delay line was also investigate to improve its acoustic directivity by reducing the acoustic acceptance angle. These two improvements are expected to provide an effective solution to eliminate current limitations on the achievable acoustic delay time and out-of-plane imaging resolution of micromachined silicon acoustic delay line arrays.

  4. Bend, stretch, and touch: Locating a finger on an actively deformed transparent sensor array.

    Science.gov (United States)

    Sarwar, Mirza Saquib; Dobashi, Yuta; Preston, Claire; Wyss, Justin K M; Mirabbasi, Shahriar; Madden, John David Wyndham

    2017-03-01

    The development of bendable, stretchable, and transparent touch sensors is an emerging technological goal in a variety of fields, including electronic skin, wearables, and flexible handheld devices. Although transparent tactile sensors based on metal mesh, carbon nanotubes, and silver nanowires demonstrate operation in bent configurations, we present a technology that extends the operation modes to the sensing of finger proximity including light touch during active bending and even stretching. This is accomplished using stretchable and ionically conductive hydrogel electrodes, which project electric field above the sensor to couple with and sense a finger. The polyacrylamide electrodes are embedded in silicone. These two widely available, low-cost, transparent materials are combined in a three-step manufacturing technique that is amenable to large-area fabrication. The approach is demonstrated using a proof-of-concept 4 × 4 cross-grid sensor array with a 5-mm pitch. The approach of a finger hovering a few centimeters above the array is readily detectable. Light touch produces a localized decrease in capacitance of 15%. The movement of a finger can be followed across the array, and the location of multiple fingers can be detected. Touch is detectable during bending and stretch, an important feature of any wearable device. The capacitive sensor design can be made more or less sensitive to bending by shifting it relative to the neutral axis. Ultimately, the approach is adaptable to the detection of proximity, touch, pressure, and even the conformation of the sensor surface.

  5. Interaction between confined phonons and photons in periodic silicon resonators

    Science.gov (United States)

    Iskandar, A.; Gwiazda, A.; Younes, J.; Kazan, M.; Bruyant, A.; Tabbal, M.; Lerondel, G.

    2018-03-01

    In this paper, we demonstrate that phonons and photons of different momenta can be confined and interact with each other within the same nanostructure. The interaction between confined phonons and confined photons in silicon resonator arrays is observed by means of Raman scattering. The Raman spectra from large arrays of dielectric silicon resonators exhibited Raman enhancement accompanied with a downshift and broadening. The analysis of the Raman intensity and line shape using finite-difference time-domain simulations and a spatial correlation model demonstrated an interaction between photons confined in the resonators and phonons confined in highly defective regions prompted by the structuring process. It was shown that the Raman enhancement is due to collective lattice resonance inducing field confinement in the resonators, while the spectra downshift and broadening are signatures of the relaxation of the phonon wave vector due to phonon confinement in defective regions located in the surface layer of the Si resonators. We found that as the resonators increase in height and their shape becomes cylindrical, the amplitude of their coherent oscillation increases and hence their ability to confine the incoming electric field increases.

  6. S-Wave Velocity Structure of the Taiwan Chelungpu Fault Drilling Project (TCDP) Site Using Microtremor Array Measurements

    Science.gov (United States)

    Wu, Cheng-Feng; Huang, Huey-Chu

    2015-10-01

    The Taiwan Chelungpu Fault Drilling Project (TCDP) drilled a 2-km-deep hole 2.4 km east of the surface rupture of the 1999 Chi-Chi earthquake ( M w 7.6), near the town of Dakeng. Geophysical well logs at the TCDP site were run over depths ranging from 500 to 1,900 m to obtain the physical properties of the fault zones and adjacent damage zones. These data provide good reference material for examining the validity of velocity structures using microtremor array measurement; therefore, we conduct array measurements for a total of four arrays at two sites near the TCDP drilling sites. The phase velocities at frequencies of 0.2-5 Hz are calculated using the frequency-wavenumber ( f- k) spectrum method. Then the S-wave velocity structures are estimated by employing surface wave inversion techniques. The S-wave velocity from the differential inversion technique gradually increases from 1.52 to 2.22 km/s at depths between 585 and 1,710 m. This result is similar to those from the velocity logs, which range from 1.4 km/s at a depth of 597 m to 2.98 km/s at a depth of 1,705 m. The stochastic inversion results are similar to those from the seismic reflection methods and the lithostratigraphy of TCDP-A borehole, comparatively. These results show that microtremor array measurement provides a good tool for estimating deep S-wave velocity structure.

  7. A new detector concept for silicon photomultipliers

    Energy Technology Data Exchange (ETDEWEB)

    Sadigov, A., E-mail: saazik@yandex.ru [National Nuclear Research Center, Baku (Azerbaijan); Ahmadov, F.; Ahmadov, G. [National Nuclear Research Center, Baku (Azerbaijan); Ariffin, A.; Khorev, S. [Zecotek Photonics Inc., Vancouver (Canada); Sadygov, Z. [National Nuclear Research Center, Baku (Azerbaijan); Joint Institute for Nuclear Research, Dubna (Russian Federation); Suleymanov, S. [National Nuclear Research Center, Baku (Azerbaijan); Zerrouk, F. [Zecotek Photonics Inc., Vancouver (Canada); Madatov, R. [Institute of Radiation Problems, Baku (Azerbaijan)

    2016-07-11

    A new design and principle of operation of silicon photomultipliers are presented. The new design comprises a semiconductor substrate and an array of independent micro-phototransistors formed on the substrate. Each micro-phototransistor comprises a photosensitive base operating in Geiger mode and an individual micro-emitter covering a small part of the base layer, thereby creating, together with this latter, a micro-transistor. Both micro-emitters and photosensitive base layers are connected with two respective independent metal grids via their individual micro-resistors. The total value of signal gain in the proposed silicon photomultiplier is a result of both the avalanche gain in the base layer and the corresponding gain in the micro-transistor. The main goals of the new design are: significantly lower both optical crosstalk and after-pulse effects at high signal amplification, improve speed of single photoelectron pulse formation, and significantly reduce the device capacitance.

  8. APD arrays and large-area APDs via a new planar process

    CERN Document Server

    Farrell, R; Vanderpuye, K; Grazioso, R; Myers, R; Entine, G

    2000-01-01

    A fabrication process has been developed which allows the beveled-edge-type of avalanche photodiode (APD) to be made without the need for the artful bevel formation steps. This new process, applicable to both APD arrays and to discrete detectors, greatly simplifies manufacture and should lead to significant cost reduction for such photodetectors. This is achieved through a simple innovation that allows isolation around the device or array pixel to be brought into the plane of the surface of the silicon wafer, hence a planar process. A description of the new process is presented along with performance data for a variety of APD device and array configurations. APD array pixel gains in excess of 10 000 have been measured. Array pixel coincidence timing resolution of less than 5 ns has been demonstrated. An energy resolution of 6% for 662 keV gamma-rays using a CsI(T1) scintillator on a planar processed large-area APD has been recorded. Discrete APDs with active areas up to 13 cm sup 2 have been operated.

  9. Separation of Nuclear Fuel Surrogates from Silicon Carbide Inert Matrix

    International Nuclear Information System (INIS)

    Baney, Ronald

    2008-01-01

    The objective of this project has been to identify a process for separating transuranic species from silicon carbide (SiC). Silicon carbide has become one of the prime candidates for the matrix in inert matrix fuels, (IMF) being designed to reduce plutonium inventories and the long half-lives actinides through transmutation since complete reaction is not practical it become necessary to separate the non-transmuted materials from the silicon carbide matrix for ultimate reprocessing. This work reports a method for that required process

  10. A high volume cost efficient production macrostructuring process. [for silicon solar cell surface treatment

    Science.gov (United States)

    Chitre, S. R.

    1978-01-01

    The paper presents an experimentally developed surface macro-structuring process suitable for high volume production of silicon solar cells. The process lends itself easily to automation for high throughput to meet low-cost solar array goals. The tetrahedron structure observed is 0.5 - 12 micron high. The surface has minimal pitting with virtually no or very few undeveloped areas across the surface. This process has been developed for (100) oriented as cut silicon. Chemi-etched, hydrophobic and lapped surfaces were successfully texturized. A cost analysis as per Samics is presented.

  11. III–V-on-Silicon Photonic Integrated Circuits for Spectroscopic Sensing in the 2–4 μm Wavelength Range

    Science.gov (United States)

    Wang, Ruijun; Vasiliev, Anton; Muneeb, Muhammad; Malik, Aditya; Sprengel, Stephan; Boehm, Gerhard; Amann, Markus-Christian; Šimonytė, Ieva; Vizbaras, Augustinas; Vizbaras, Kristijonas; Baets, Roel; Roelkens, Gunther

    2017-01-01

    The availability of silicon photonic integrated circuits (ICs) in the 2–4 μm wavelength range enables miniature optical sensors for trace gas and bio-molecule detection. In this paper, we review our recent work on III–V-on-silicon waveguide circuits for spectroscopic sensing in this wavelength range. We first present results on the heterogeneous integration of 2.3 μm wavelength III–V laser sources and photodetectors on silicon photonic ICs for fully integrated optical sensors. Then a compact 2 μm wavelength widely tunable external cavity laser using a silicon photonic IC for the wavelength selective feedback is shown. High-performance silicon arrayed waveguide grating spectrometers are also presented. Further we show an on-chip photothermal transducer using a suspended silicon-on-insulator microring resonator used for mid-infrared photothermal spectroscopy. PMID:28777291

  12. Progress report on the use of hybrid silicon pin diode arrays in high energy physics

    International Nuclear Information System (INIS)

    Shapiro, S.L.; Jernigan, J.G.; Arens, J.F.

    1990-05-01

    We report on the successful effort to develop hybrid PIN diode arrays and to demonstrate their potential as components of vertex detectors. Hybrid pixel arrays have been fabricated by the Hughes Aircraft Co. by bump-bonding readout chips developed by Hughes to an array of PIN diodes manufactured by Micron Semiconductor Inc. These hybrid pixel arrays were constructed in two configurations. One array format has 10 x 64 pixels, each 120 μm square; and the other format has 256 x 156 pixels, each 30 μm square. In both cases, the thickness of the PIN diode layer is 300 μm. Measurements of detector performance show that excellent position resolution can be achieved by interpolation. By determining the centroid of the charge cloud which spreads charge into a number of neighboring pixels, a spatial resolution of a few microns has been attained. The noise has been measured to be about 300 electrons (rms) at room temperature, as expected from KTC and dark current considerations, yielding a signal-to-noise ratio of about 100 for minimum ionizing particles. 4 refs., 17 figs

  13. Surface plasmons based terahertz modulator consisting of silicon-air-metal-dielectric-metal layers

    Science.gov (United States)

    Wang, Wei; Yang, Dongxiao; Qian, Zhenhai

    2018-05-01

    An optically controlled modulator of the terahertz wave, which is composed of a metal-dielectric-metal structure etched with circular loop arrays on both the metal layers and a photoexcited silicon wafer separated by an air layer, is proposed. Simulation results based on experimentally measured complex permittivities predict that modification of complex permittivity of the silicon wafer through excitation laser leads to a significant tuning of transmission characteristics of the modulator, forming the modulation depths of 59.62% and 96.64% based on localized surface plasmon peak and propagating surface plasmon peak, respectively. The influences of the complex permittivity of the silicon wafer and the thicknesses of both the air layer and the silicon wafer are numerically studied for better understanding the modulation mechanism. This study proposes a feasible methodology to design an optically controlled terahertz modulator with large modulation depth, high speed and suitable insertion loss, which is useful for terahertz applications in the future.

  14. Ductile cutting of silicon microstructures with surface inclination measurement and compensation by using a force sensor integrated single point diamond tool

    International Nuclear Information System (INIS)

    Chen, Yuan-Liu; Cai, Yindi; Shimizu, Yuki; Ito, So; Gao, Wei; Ju, Bing-Feng

    2016-01-01

    This paper presents a measurement and compensation method of surface inclination for ductile cutting of silicon microstructures by using a diamond tool with a force sensor based on a four-axis ultra-precision lathe. The X- and Y-directional inclinations of a single crystal silicon workpiece with respect to the X- and Y-motion axes of the lathe slides were measured respectively by employing the diamond tool as a touch-trigger probe, in which the tool-workpiece contact is sensitively detected by monitoring the force sensor output. Based on the measurement results, fabrication of silicon microstructures can be thus carried out directly along the tilted silicon workpiece by compensating the cutting motion axis to be parallel to the silicon surface without time-consuming pre-adjustment of the surface inclination or turning of a flat surface. A diamond tool with a negative rake angle was used in the experiment for superior ductile cutting performance. The measurement precision by using the diamond tool as a touch-trigger probe was investigated. Experiments of surface inclination measurement and ultra-precision ductile cutting of a micro-pillar array and a micro-pyramid array with inclination compensation were carried out respectively to demonstrate the feasibility of the proposed method. (paper)

  15. A LSO scintillator array for a PET detector module with depth of interaction measurement

    International Nuclear Information System (INIS)

    Huber, J.S.; Moses, W.W.; Andreaco, M.S.; Petterson, O.

    2000-01-01

    We present construction methods and performance results for a production scintillator array of 64 optically isolated, 3 mm x 3 mm x 30 mm sized LSO crystals. This scintillator array has been developed for a PET detector module consisting of the 8x8 LSO array coupled on one end to a single photomultiplier tube (PMT) and on the opposite end to a 64 pixel array of silicon photodiodes (PD). The PMT provides an accurate timing pulse and initial energy discrimination, the PD identifies the crystal of interaction, the sum provides a total energy signal, and the PD/(PD+PMT) ratio determines the depth of interaction (DOI). Unlike the previous LSO array prototypes, we now glue Lumirror reflector material directly onto 4 sides of each crystal to obtain an easily manufactured, mechanically rugged array with our desired depth dependence. With 511 keV excitation, we obtain a total energy signal of 3600 electrons, pulse-height resolution of 25% fwhm, and 6-15 mm fwhm DOI resolution

  16. Reflectivity quenching of ESR multilayer polymer film reflector in optically bonded scintillator arrays

    Science.gov (United States)

    Loignon-Houle, Francis; Pepin, Catherine M.; Charlebois, Serge A.; Lecomte, Roger

    2017-04-01

    The 3M-ESR multilayer polymer film is a widely used reflector in scintillation detector arrays. As specified in the datasheet and confirmed experimentally by measurements in air, it is highly reflective (> 98 %) over the entire visible spectrum (400-1000 nm) for all angles of incidence. Despite these outstanding characteristics, it was previously found that light crosstalk between pixels in a bonded LYSO scintillator array with ESR reflector can be as high as ∼30-35%. This unexplained light crosstalk motivated further investigation of ESR optical performance. Analytical simulation of a multilayer structure emulating the ESR reflector showed that the film becomes highly transparent to incident light at large angles when surrounded on both sides by materials of refractive index higher than air. Monte Carlo simulations indicate that a considerable fraction (∼25-35%) of scintillation photons are incident at these leaking angles in high aspect ratio LYSO scintillation crystals. The film transparency was investigated experimentally by measuring the scintillation light transmission through the ESR film sandwiched between a scintillation crystal and a photodetector with or without layers of silicone grease. Strong light leakage, up to nearly 30%, was measured through the reflector when coated on both sides with silicone, thus elucidating the major cause of light crosstalk in bonded arrays. The reflector transparency was confirmed experimentally for angles of incidence larger than 60 ° using a custom designed setup allowing illumination of the bonded ESR film at selected grazing angles. The unsuspected ESR film transparency can be beneficial for detector arrays exploiting light sharing schemes, but it is highly detrimental for scintillator arrays designed for individual pixel readout.

  17. Silicon quantum dots: surface matters

    Czech Academy of Sciences Publication Activity Database

    Dohnalová, K.; Gregorkiewicz, T.; Kůsová, Kateřina

    2014-01-01

    Roč. 26, č. 17 (2014), 1-28 ISSN 0953-8984 R&D Projects: GA ČR GPP204/12/P235 Institutional support: RVO:68378271 Keywords : silicon quantum dots * quantum dot * surface chemistry * quantum confinement Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 2.346, year: 2014

  18. The bipolar silicon microstrip detector: A proposal for a novel precision tracking device

    International Nuclear Information System (INIS)

    Horisberger, R.

    1990-01-01

    It is proposed to combine the technology of fully depleted microstrip detectors fabricated on n doped high resistivity silicon with the concept of the bipolar transistor. This is done by adding a n ++ doped region inside the normal p + implanted region of the reverse biased p + n diode. The resulting structure has amplifying properties and is referred to as bipaolar pixel transistor. The simplest readout scheme of a bipolar pixel array by an aluminium strip bus leads to the bipolar microstrip detector. The bipolar pixel structure is expected to give a better signal-to-noise performance for the detection of minimum ionizing charged particle tracks than the normal silicon diode strip detector and therefore should allow in future the fabrication of thinner silicon detectors for precision tracking. (orig.)

  19. An array of ordered pillars with retentive properties for pressure-driven liquid chromatography fabricated directly from an unmodified cyclo olefin polymer

    NARCIS (Netherlands)

    Illa, Xavi; de Malsche, Wim; Bomer, Johan G.; Gardeniers, Johannes G.E.; Eijkel, Jan C.T.; Morante, Joan Ramon; Romano-Rodriguez, Albert; Desmet, Gert

    2009-01-01

    The current paper describes the development and characterization of a pillar array chip that is constructed out of a sandwich of cyclo olefin polymer (COP) sheets. The silicon master of a 5 cm long pillar array was embossed into the COP, yielding 4.3 µm deep pillars of 15.3 µm diameter with an

  20. Energy requirement for the production of silicon solar arrays

    Science.gov (United States)

    Lindmayer, J.; Wihl, M.; Scheinine, A.; Rosenfield, T.; Wrigley, C. Y.; Morrison, A.; Anderson, J.; Clifford, A.; Lafky, W.

    1977-01-01

    The results of a study to investigate the feasibility of manufacturing photovoltaic solar array modules by the use of energy obtained from similar or identical photovoltaic sources are presented. The primary objective of this investigation was the characterization of the energy requirements of current and developing technologies which comprise the photovoltaic field. For cross-checking the energies of prevailing technologies data were also used and the wide-range assessment of alternative technologies included different refinement methods, various ways of producing light sheets, semicrystalline cells, etc. Energy data are utilized to model the behavior of a future solar breeder plant under various operational conditions.