Sample records for argon nitrides

  1. Nitridation in Photon-Assisted Process Using Argon Excimer Lamp (United States)

    Toshikawa, Kiyohiko; Amari, Kouichi; Ishimura, Sou; Katto, Masahito; Yokotani, Atsushi; Kurosawa, Kou


    We attempted silicon nitridation that continuously deposits silicon with monosilane (SiH4) and nitrides the silicon with ammonia (NH3) at a low temperature using a vacuum ultraviolet excimer lamp. We used an argon excimer lamp (λ=126 nm, h ν=9.8 eV) so that SiH4 and NH3 can absorb photons and dissociate. Nitrogen exists only near the film surface at a low temperature, and its concentration increases at a high temperature. This photon-assisted process is very feasible for the nitridation of semiconductor devices and flat panel displays in the near future, because it is a low-temperature and low-damage process.

  2. Effects of post-deposition argon implantation on the memory properties of plasma-deposited silicon nitride films (United States)

    Shams, Q. A.; Brown, W. D.


    Post-deposition ion implantation has been used to introduce argon into plasma-enhanced chemically vapor deposited silicon nitride films in an attempt to influence the transfer, trapping, and emission of charge during write/erase exercising of the metal-silicon nitride-silicon oxide-silicon structure. Argon was implanted into the SiH4 -NH3 -N2 deposited films at energies ranging from 25 to 75 keV, current densities ranging from 0.1 to 75 μA/cm2 and fluences ranging from 1×1012 to 1×1016 ions/cm2. Physical properties of the films were studied by ellipsometry and infrared spectroscopy, while high frequency capacitance-voltage (C-V) curves were used to obtain programming, retention, and endurance characteristics.

  3. Surface wet-ability modification of thin PECVD silicon nitride layers by 40 keV argon ion treatments (United States)

    Caridi, F.; Picciotto, A.; Vanzetti, L.; Iacob, E.; Scolaro, C.


    Measurements of wet-ability of liquid drops have been performed on a 30 nm silicon nitride (Si3N4) film deposited by a PECVD reactor on a silicon wafer and implanted by 40 keV argon ions at different doses. Surface treatments by using Ar ion beams have been employed to modify the wet-ability. The chemical composition of the first Si3N4 monolayer was investigated by means of X-ray Photoelectron Spectroscopy (XPS). The surface morphology was tested by Atomic Force Microscopy (AFM). Results put in evidence the best implantation conditions for silicon nitride to increase or to reduce the wet-ability of the biological liquid. This permits to improve the biocompatibility and functionality of Si3N4. In particular experimental results show that argon ion bombardment increases the contact angle, enhances the oxygen content and increases the surface roughness.

  4. Silicon Nitride Film Deposition by Photochemical Vapor Deposition Using an Argon Excimer Lamp (United States)

    Maezono, Yoshinari; Toshikawa, Kiyohiko; Kurosawa, Kou; Amari, Kouichi; Ishimura, Sou; Katto, Masahito; Yokotani, Atsushi


    In this paper, we report the deposition of silicon nitride (SiNx) films for the production of semiconductor devices and flat panel displays, by chemical vapor deposition with vacuum ultraviolet excimer lamps (VUV-CVD) using SiH4 and NH3 as raw materials. An Ar2* excimer lamp (λ=126 nm, hν=9.8 eV) with a high photon energy was used to directly excite and dissociate SiH4 through a photochemical reaction. SiNx films were successfully formed at a low temperature of 100 °C with the Ar2* excimer lamp. Although the Si-rich films were obtained using an Ar2* lamp, they showed a quality almost similar to that of films obtained by conventional plasma-CVD at 400 °C.

  5. Spontaneously-acoustic hypersound long-range stimulation of silicon nitride synthesis in silicon at argon ion irradiation

    CERN Document Server

    Demidov, E S; Markov, K A; Sdobnyakov, V V


    The work is dedicated to the nature of the average energy ions implantation process effect on the crystal defective system at the distances, exceeding by three-four orders the averagely projected ions run value. It is established that irradiation by the argon ions stimulated the Si sub 3 N sub 4 phase formation in the preliminarily nitrogen-saturated layers at the distances of approximately 600 mu m from the ions deceleration zone. It is supposed that there appear sufficiently effective pulse sources of the hypersonic shock waves in the area of the Ar sup + deceleration zone. These waves are the result of the jump-like origination and grid evolution of the loop-shaped dislocations and argon blisters as well as of the blisters explosion, The evaluations show that the peak pressure in wave due to the synchronized explosion of blisters in the nitrogen-saturated area on the reverse side of the silicon plate 600 mu m thick may exceed 10 sup 8 Pa and cause experimentally observed changes

  6. Radiation Stability of Triple Coatings Based on Transition-Metal Nitrides Under Irradiation By Alpha Particles and Argon Ions (United States)

    Potekaev, A. I.; Kislitsyn, S. B.; Uglov, V. V.; Klopotov, A. A.; Gorlachev, I. D.; Klopotov, V. D.; Grinkevich, L. S.


    The data on the influence of irradiation of (Ti, Cr)N1-x coatings by helium and argon ions on their surface structure are presented. The (Ti, Cr)N1-x coatings 50-300 nm in thickness were formed on carbon steel substrates by vacuum-arc deposition. Irradiation of the coated specimens was performed in a DC-60 heavy-ion accelerator by low-energy 4He+1, 4He+2 and 40Ar5+ ions and high-energy 40Ar5+ ions up to the fluence 1.0·1017 ion/cm2 at the irradiation temperature not higher than 150°C. It is shown that irradiation of the (Ti, Cr)N1-x coating surface by 4He+1, 4He+2 and 40Ar5+ ions with the energy 20 keV/charge does not give rise to any noticeable structural changes nor any surface blistering, while its irradiation by 40Ar5+ ions with the energy 1.50 MeV/amu causes blistering.

  7. Effect of argon ion energy on the performance of silicon nitride multilayer permeation barriers grown by hot-wire CVD on polymers

    Energy Technology Data Exchange (ETDEWEB)

    Alpuim, P. [Centro de Física, Universidade do Minho, 4710-057 Braga (Portugal); INL, International Iberian Nanotechnology Laboratory, 4715-330 Braga (Portugal); Majee, S. [Laboratoire de Physique des Interfaces et des Couches Minces, CNRS UMR 7647, Ecole Polytechnique, Université Paris-Saclay, 91128 Palaiseau (France); Cerqueira, M.F. [INL, International Iberian Nanotechnology Laboratory, 4715-330 Braga (Portugal); Tondelier, D. [Laboratoire de Physique des Interfaces et des Couches Minces, CNRS UMR 7647, Ecole Polytechnique, Université Paris-Saclay, 91128 Palaiseau (France); Geffroy, B. [Laboratoire de Physique des Interfaces et des Couches Minces, CNRS UMR 7647, Ecole Polytechnique, Université Paris-Saclay, 91128 Palaiseau (France); Laboratoire d' Innovation de Chimie des Surfaces et des Nanomatériaux, IRAMIS/NIMBE, CNRS UMR 3685, CEA Saclay, 91191 Gif-sur-Yvette (France); Bonnassieux, Y. [Laboratoire de Physique des Interfaces et des Couches Minces, CNRS UMR 7647, Ecole Polytechnique, Université Paris-Saclay, 91128 Palaiseau (France); Bourée, J.E., E-mail: [Laboratoire de Physique des Interfaces et des Couches Minces, CNRS UMR 7647, Ecole Polytechnique, Université Paris-Saclay, 91128 Palaiseau (France)


    Permeation barriers for organic electronic devices on polymer flexible substrates were realized by combining stacked silicon nitride (SiN{sub x}) single layers (50 nm thick) deposited by hot-wire chemical vapor deposition process at low-temperature (~ 100°°C) with a specific argon plasma treatment between two successive layers. Several plasma parameters (RF power density, pressure, treatment duration) as well as the number of single layers have been explored in order to improve the quality of permeation barriers deposited on polyethylene terephthalate. In this work, maximum ion energy was highlighted as the crucial parameter making it possible to minimize water vapor transmission rate (WVTR), as determined by the electrical calcium test method, all the other parameters being kept fixed. Thus fixing the plasma treatment duration at 8 min for a stack of two SiN{sub x} single layers, a minimum WVTR of 5 × 10{sup −4} g/(m{sup 2} day), measured at room temperature, was found for a maximum ion energy of ~ 30 eV. This minimum WVTR value was reduced to 7 × 10{sup −5} g/(m{sup 2} day) for a stack of five SiN{sub x} single layers. The reduction in the permeability is interpreted as due to the rearrangement of atoms at the interfaces when average transferred ion energy to target atoms exceeds threshold displacement energy. - Highlights: • Αn original way to achieve permeation barriers on polymer substrates is developed. • It combines SiN{sub x} multilayers grown by HWCVD with an intermediate Ar plasma treatment. • A minimum of water vapor transmission rate is found related to maximum Ar ion energy. • This minimum is due to atomic rearrangement in SiN{sub x} interfaces under the impact of ions. • The average Ar ion energy must exceed atomic threshold displacement energy for Si.

  8. The thermal power of aluminum nitride at temperatures between 1350 and 1650 deg C in argon and nitrogen atmospheres. Ph.D. Thesis - Rhine-Westphalia High School at Aachen (United States)

    Fischer, W. A.; Schuh, B.


    The test apparatus for measuring the thermal voltage of aluminum nitride for temperature differences of up to + or - 60 C between 1350 and 1650 C is described. The thermal power and its homogeneous proportion are determined and the heat transfer of the migration ions resulting from the homogeneous thermal power is calculated. The conduction mechanism in aluminum nitride is discussed.

  9. Formation and control of stoichiometric hafnium nitride thin films by direct sputtering of hafnium nitride target

    CERN Document Server

    Gotoh, Y; Ishikawa, J; Liao, M Y


    Hafnium nitride thin films were prepared by radio-frequency sputter deposition with a hafnium nitride target. Deposition was performed with various rf powers, argon pressures, and substrate temperatures, in order to investigate the influences of these parameters on the film properties, particularly the nitrogen composition. It was found that stoichiometric hafnium nitride films were formed at an argon gas pressure of less than 2 Pa, irrespective of the other deposition parameters within the range investigated. Maintaining the nitrogen composition almost stoichiometric, orientation, stress, and electrical resistivity of the films could be controlled with deposition parameters. (author)

  10. Plasma nitriding of AISI 52100 ball bearing steel and effect of heat treatment on nitrided layer

    Indian Academy of Sciences (India)

    Ravindra Kumar; J Alphonsa; Ram Prakash; K S Boob; J Ghanshyam; P A Rayjada; P M Raole; S Mukherjee


    In this paper an effort has been made to plasma nitride the ball bearing steel AISI 52100. The difficulty with this specific steel is that its tempering temperature (∼170–200°C) is much lower than the standard processing temperature (∼460–580°C) needed for the plasma nitriding treatment. To understand the mechanism, effect of heat treatment on the nitrided layer steel is investigated. Experiments are performed on three different types of ball bearing races i.e. annealed, quenched and quench-tempered samples. Different gas compositions and process temperatures are maintained while nitriding these samples. In the quenched and quench-tempered samples, the surface hardness has decreased after plasma nitriding process. Plasma nitriding of annealed sample with argon and nitrogen gas mixture gives higher hardness in comparison to the hydrogen–nitrogen gas mixture. It is reported that the later heat treatment of the plasma nitrided annealed sample has shown improvement in the hardness of this steel. X-ray diffraction analysis shows that the dominant phases in the plasma nitrided annealed sample are (Fe2−3N) and (Fe4N), whereas in the plasma nitrided annealed sample with later heat treatment only -Fe peak occurs.

  11. Argon in action

    CERN Multimedia

    Corinne Pralavorio


    Over the past few days, the SPS has been accelerating argon ions, which have started to be sent to the NA61/SHINE experiment. This operating mode, using a new type of ion, required a number of modifications to the accelerator.   Picture 1: a “super-cycle” of the SPS, featuring a proton cycle for the LHC, followed by an argon ion cycle for the North Area. Today, the accelerators are once again juggling particles and even performing completely new tricks. The SPS is supplying beams of argon ions for the first time, at energies never before achieved for this type of beam. They are destined for the NA61/SHINE experiment (see box) located in the North Area, which began receiving the beams on 11 February. Argon ions have a relatively large mass, as they consist of 40 nucleons, so they can be used in a similar way to lead ions. The main difficulty in accelerating them lies in the SPS, where the variation in acceleration frequency is limited. “The SPS was designed for a...

  12. RF-sputtered silicon and hafnium nitrides - Properties and adhesion to 440C stainless steel (United States)

    Grill, A.; Aron, P. R.


    Silicon nitride and hafnium nitride coatings were deposited by reactive RF sputtering on oxidized and unoxidized 440C stainless steel substrates. Sputtering was done in mixtures of argon and nitrogen gases from pressed powder silicon nitride and from hafnium metal targets. Depositions were at two background pressures, 8 and 20 mtorr, and at two different fractions (f) of nitrogen in argon, 0.25 and 0.60, for hafnium nitride and at f = 0.25 for silicon nitride. The coatings and the interface between the coating and substrates were investigated by X-ray diffractometry, scanning electron microscopy, energy dispersive X-ray analysis and Auger electron spectroscopy. A Knoop microhardness of 1650 + or 100 kg/sq mm was measured for hafnium nitride and 3900 + or 500 kg/sq mm for silicon nitride. The friction coefficients between a 440C rider and the coatings were measured under lubricated conditions. Scratch test results demonstrate that the adhesion of hafnium nitride to both oxidized and unoxidized 440C is superior to that of silicon nitride. Oxidized 440C is found to have increased adhesion, to both nitrides, over that of unoxidized 440C.

  13. Future liquid Argon detectors

    CERN Document Server

    Rubbia, A


    The Liquid Argon Time Projection Chamber offers an innovative technology for a new class of massive detectors for rare-event detection. It is a precise tracking device that allows three-dimensional spatial reconstruction with mm-scale precision of the morphology of ionizing tracks with the imaging quality of a "bubble chamber", provides $dE/dx$ information with high sampling rate, and acts as high-resolution calorimeter for contained events. First proposed in 1977 and after a long maturing process, its holds today the potentialities of opening new physics opportunities by providing excellent tracking and calorimetry performance at the relevant multi-kton mass scales, outperforming other techniques. In this paper, we review future liquid argon detectors presently being discussed by the neutrino physics community.

  14. Crystalline boron nitride aerogels

    Energy Technology Data Exchange (ETDEWEB)

    Zettl, Alexander K.; Rousseas, Michael; Goldstein, Anna P.; Mickelson, William; Worsley, Marcus A.; Woo, Leta


    This disclosure provides methods and materials related to boron nitride aerogels. In one aspect, a material comprises an aerogel comprising boron nitride. The boron nitride has an ordered crystalline structure. The ordered crystalline structure may include atomic layers of hexagonal boron nitride lying on top of one another, with atoms contained in a first layer being superimposed on atoms contained in a second layer.

  15. Plasma nitriding of steels

    CERN Document Server

    Aghajani, Hossein


    This book focuses on the effect of plasma nitriding on the properties of steels. Parameters of different grades of steels are considered, such as structural and constructional steels, stainless steels and tools steels. The reader will find within the text an introduction to nitriding treatment, the basis of plasma and its roll in nitriding. The authors also address the advantages and disadvantages of plasma nitriding in comparison with other nitriding methods. .

  16. Boron nitride composites

    Energy Technology Data Exchange (ETDEWEB)

    Kuntz, Joshua D.; Ellsworth, German F.; Swenson, Fritz J.; Allen, Patrick G.


    According to one embodiment, a composite product includes: a matrix material including hexagonal boron nitride and one or more borate binders; and a plurality of cubic boron nitride particles dispersed in the matrix material. According to another embodiment, a composite product includes: a matrix material including hexagonal boron nitride and amorphous boron nitride; and a plurality of cubic boron nitride particles dispersed in the matrix material.

  17. Depleted argon from underground sources

    Energy Technology Data Exchange (ETDEWEB)

    Back, H.O.; /Princeton U.; Alton, A.; /Augustana U. Coll.; Calaprice, F.; Galbiati, C.; Goretti, A.; /Princeton U.; Kendziora, C.; /Fermilab; Loer, B.; /Princeton U.; Montanari, D.; /Fermilab; Mosteiro, P.; /Princeton U.; Pordes, S.; /Fermilab


    Argon is a powerful scintillator and an excellent medium for detection of ionization. Its high discrimination power against minimum ionization tracks, in favor of selection of nuclear recoils, makes it an attractive medium for direct detection of WIMP dark matter. However, cosmogenic {sup 39}Ar contamination in atmospheric argon limits the size of liquid argon dark matter detectors due to pile-up. The cosmic ray shielding by the earth means that Argon from deep underground is depleted in {sup 39}Ar. In Cortez Colorado a CO{sub 2} well has been discovered to contain approximately 500ppm of argon as a contamination in the CO{sub 2}. In order to produce argon for dark matter detectors we first concentrate the argon locally to 3-5% in an Ar, N{sub 2}, and He mixture, from the CO{sub 2} through chromatographic gas separation. The N{sub 2} and He will be removed by continuous cryogenic distillation in the Cryogenic Distillation Column recently built at Fermilab. In this talk we will discuss the entire extraction and purification process; with emphasis on the recent commissioning and initial performance of the cryogenic distillation column purification.

  18. The Liquid Argon Purity Demonstrator

    CERN Document Server

    Adamowski, M; Dvorak, E; Hahn, A; Jaskierny, W; Johnson, C; Jostlein, H; Kendziora, C; Lockwitz, S; Pahlka, B; Plunkett, R; Pordes, S; Rebel, B; Schmitt, R; Stancari, M; Tope, T; Voirin, E; Yang, T


    The Liquid Argon Purity Demonstrator was an R&D test stand designed to determine if electron drift lifetimes adequate for large neutrino detectors could be achieved without first evacuating the cryostat. We describe here the cryogenic system, its operations, and the apparatus used to determine the contaminant levels in the argon and to measure the electron drift lifetime. The liquid purity obtained by this system was facilitated by a gaseous argon purge. Additionally, gaseous impurities from the ullage were prevented from entering the liquid at the gas-liquid interface by condensing the gas and filtering the resulting liquid before returning to the cryostat. The measured electron drift lifetime in this test was greater than 6 ms, sustained over several periods of many weeks. Measurements of the temperature profile in the argon, to assess convective flow and boiling, were also made and are compared to simulation.

  19. The Liquid Argon Purity Demonstrator

    Energy Technology Data Exchange (ETDEWEB)

    Adamowski, M.; Carls, B.; Dvorak, E.; Hahn, A.; Jaskierny, W.; Johnson, C.; Jostlein, H.; Kendziora, C.; Lockwitz, S.; Pahlka, B.; Plunkett, R.; Pordes, S.; Rebel, B.; Schmitt, R.; Stancari, M.; Tope, T.; Voirin, E.; Yang, T.


    The Liquid Argon Purity Demonstrator was an R&D test stand designed to determine if electron drift lifetimes adequate for large neutrino detectors could be achieved without first evacuating the cryostat. We describe here the cryogenic system, its operations, and the apparatus used to determine the contaminant levels in the argon and to measure the electron drift lifetime. The liquid purity obtained by this system was facilitated by a gaseous argon purge. Additionally, gaseous impurities from the ullage were prevented from entering the liquid at the gas-liquid interface by condensing the gas and filtering the resulting liquid before returning to the cryostat. The measured electron drift lifetime in this test was greater than 6 ms, sustained over several periods of many weeks. Measurements of the temperature profile in the argon, to assess convective flow and boiling, were also made and are compared to simulation.

  20. Proton Scattering on Liquid Argon (United States)

    Bouabid, Ryan; LArIAT Collaboration


    LArIAT (Liquid Argon In A Test-beam) is a liquid argon time projection chamber (LArTPC) positioned in a charged particle beamline whose primary purpose is to study the response of LArTPC's to charged particle interactions. This previously unmeasured experimental data will allow for improvement of Monte Carlo simulations and development of identification techniques, important for future planned LArTPC neutrino experiments. LArIAT's beamline is instrumented to allow for the identification of specific particles as well as measurement of those particles' incoming momenta. Among the particles present in the beamline, the analysis presented here focuses on proton-Argon interactions. This study uses particle trajectories and calorimetric information to identify proton-Argon interaction candidates. We present preliminary data results on the measurement of the proton-Argon cross-section. Liquid Argon In A Test Beam. The work is my analysis made possible through the efforts of LArIAT detector, data, and software.

  1. Methods of forming boron nitride (United States)

    Trowbridge, Tammy L; Wertsching, Alan K; Pinhero, Patrick J; Crandall, David L


    A method of forming a boron nitride. The method comprises contacting a metal article with a monomeric boron-nitrogen compound and converting the monomeric boron-nitrogen compound to a boron nitride. The boron nitride is formed on the same or a different metal article. The monomeric boron-nitrogen compound is borazine, cycloborazane, trimethylcycloborazane, polyborazylene, B-vinylborazine, poly(B-vinylborazine), or combinations thereof. The monomeric boron-nitrogen compound is polymerized to form the boron nitride by exposure to a temperature greater than approximately C. The boron nitride is amorphous boron nitride, hexagonal boron nitride, rhombohedral boron nitride, turbostratic boron nitride, wurzite boron nitride, combinations thereof, or boron nitride and carbon. A method of conditioning a ballistic weapon and a metal article coated with the monomeric boron-nitrogen compound are also disclosed.

  2. Attainable superheat of argon-helium, argon-neon solutions. (United States)

    Baidakov, Vladimir G; Kaverin, Aleksey M; Andbaeva, Valentina N


    The method of lifetime measurement has been used to investigate the kinetics of spontaneous boiling-up of superheated argon-helium and argon-neon solutions. Experiments were made at a pressure of p = 1.5 MPa and concentrations up to 0.33 mol% in the range of nucleation rates from 10 (4) to 10 (8) s (-1) m (-3). The homogeneous nucleation regime has been distinguished. With good agreement between experimental data and homogeneous nucleation theory in temperature and concentration dependences of the nucleation rate, a systematic underestimation by 0.25-0.34 K has been revealed in superheat temperatures over the saturated line attained by experiment as compared with theoretical values calculated in a macroscopic approximation. The revealed disagreement between theory and experiment is connected with the dependence of the properties of new-phase nuclei on their size.

  3. Diffusion of nitrogen in austenitic phase: Application to nitriding of stainless steels

    Directory of Open Access Journals (Sweden)

    Torchane Lazhar


    Full Text Available The nitriding treatment of the martensitic stainless steels aims to harden and to introduce compressive stresses on the surface of steel. Hardening is resulting of the martensitic transformation of the austenitic matrix enriched into nitrogen during cooling and of the germination and the nitride growth. In order to preserve the stainless character of the nitrided layer, it is imperative to control precipitation within the zone affected by the treatment. Our task consists in showing that is possible to control the composition of the gas atmosphere containing ammonia and argon and to carry out on the surface of nitrided samples at 1050°C two types of configuration of layers : a single phase layer made up by martensite enriched in nitrogen α’N and or a two phase layer made up by austenite γN and martensite α’N enriched in nitrogen.

  4. Liquid Argon Barrel Cryostat Arrived

    CERN Multimedia

    Pailler, P

    Last week the first of three cryostats for the ATLAS liquid argon calorimeter arrived at CERN. It had travelled for 46 days over several thousand kilometers from Japan to CERN. During three years it has been fabricated by Kawasaki Heavy Industries Ltd. at Harima, close to Kobe, under contract from Brookhaven National Laboratory (BNL) of the U.S.. This cryostat consists of two concentric cylinders made of aluminium: the outer vacuum vessel with a diameter of 5.5 m and a length of 7 m, and the inner cold vessel which will contain the electromagnetic barrel calorimeter immersed in liquid argon. The total weight will be 270 tons including the detectors and the liquid argon. The cryostat is now located in building 180 where it will be equipped with 64 feed-throughs which serve for the passage of 122,880 electrical lines which will carry the signals of the calorimeter. After integration of the calorimeter, the solenoidal magnet of ATLAS will be integrated in the vacuum vessel. A final cold test of the cryostat inc...

  5. Gallium nitride optoelectronic devices (United States)

    Chu, T. L.; Chu, S. S.


    The growth of bulk gallium nitride crystals was achieved by the ammonolysis of gallium monochloride. Gallium nitride single crystals up to 2.5 x 0.5 cm in size were produced. The crystals are suitable as substrates for the epitaxial growth of gallium nitride. The epitaxial growth of gallium nitride on sapphire substrates with main faces of (0001) and (1T02) orientations was achieved by the ammonolysis of gallium monochloride in a gas flow system. The grown layers had electron concentrations in the range of 1 to 3 x 10 to the 19th power/cu cm and Hall mobilities in the range of 50 to 100 sq cm/v/sec at room temperature.

  6. Boron nitride composites (United States)

    Kuntz, Joshua D.; Ellsworth, German F.; Swenson, Fritz J.; Allen, Patrick G.


    According to one embodiment, a composite product includes hexagonal boron nitride (hBN), and a plurality of cubic boron nitride (cBN) particles, wherein the plurality of cBN particles are dispersed in a matrix of the hBN. According to another embodiment, a composite product includes a plurality of cBN particles, and one or more borate-containing binders.

  7. Boron Nitride Nanotubes (United States)

    Smith, Michael W. (Inventor); Jordan, Kevin (Inventor); Park, Cheol (Inventor)


    Boron nitride nanotubes are prepared by a process which includes: (a) creating a source of boron vapor; (b) mixing the boron vapor with nitrogen gas so that a mixture of boron vapor and nitrogen gas is present at a nucleation site, which is a surface, the nitrogen gas being provided at a pressure elevated above atmospheric, e.g., from greater than about 2 atmospheres up to about 250 atmospheres; and (c) harvesting boron nitride nanotubes, which are formed at the nucleation site.

  8. Nitrogen Availability Of Nitriding Atmosphere In Controlled Gas Nitriding Processes

    Directory of Open Access Journals (Sweden)

    Michalski J.


    Full Text Available Parameters which characterize the nitriding atmosphere in the gas nitriding process of steel are: the nitriding potential KN, ammonia dissociation rate α and nitrogen availabilitymN2. The article discusses the possibilities of utilization of the nitriding atmosphere’s nitrogen availability in the design of gas nitriding processes of alloyed steels in atmospheres derived from raw ammonia, raw ammonia diluted with pre-dissociated ammonia, with nitrogen, as well as with both nitrogen and pre-dissociated ammonia. The nitriding processes were accomplished in four series. The parameters selected in the particular processes were: process temperature (T, time (t, value of nitriding potential (KN, corresponding to known dissociation rate of the ammonia which dissociates during the nitriding process (α. Variable parameters were: nitrogen availability (mN2, composition of the ingoing atmosphere and flow rate of the ingoing atmosphere (FIn.

  9. Composing Experimental Environment of PRIDE Argon cell

    Energy Technology Data Exchange (ETDEWEB)

    Noh, Seonho; Jang, Yongkuk; Cho, Il Je [Korea Atomic Energy Research Institute, Daejeon (Korea, Republic of)


    In PRIDE depleted Uranium feed material and a depleted Uranium mixed with some surrogate material are used for performing engineering scale Pyroprocessing. PRIDE has to maintain inert atmosphere because of the characteristic of Electrolytic Reduction technology, Electro refining technology, Electrowinning technology. The impurity concentration of the Argon cell has to be under 50 ppm(Oxygen, moisture). Atmospheric pressure changes and temperature changes can affect the Argon cell's impurity concentration. In this paper, how to compose the Argon cell impurity concentration under 50 ppm to make the exact optimal experimental environment(Oxygen, moisture) will be introduced. Composing the exact optimal experimental environment by supplying Argon gas have been introduced in this paper. Continuously supplying Argon gas which is heavier than the Oxygen through the bottom of the Argon cell the oxygen eventually discharged through the high vent fan and lower the impurity concentration of Oxygen.

  10. Nitrogen incorporation in sputter deposited molybdenum nitride thin films

    Energy Technology Data Exchange (ETDEWEB)

    Stöber, Laura, E-mail:; Patocka, Florian, E-mail:; Schneider, Michael, E-mail:; Schmid, Ulrich, E-mail: [Institute of Sensor and Actuator Systems, TU Wien, Gußhausstraße 27-29, A-1040 Vienna (Austria); Konrath, Jens Peter, E-mail:; Haberl, Verena, E-mail: [Infineon Technologies Austria AG, Siemensstraße 2, 9500 Villach (Austria)


    In this paper, the authors report on the high temperature performance of sputter deposited molybdenum (Mo) and molybdenum nitride (Mo{sub 2}N) thin films. Various argon and nitrogen gas compositions are applied for thin film synthetization, and the amount of nitrogen incorporation is determined by Auger measurements. Furthermore, effusion measurements identifying the binding conditions of the nitrogen in the thin film are performed up to 1000 °C. These results are in excellent agreement with film stress and scanning electron microscope analyses, both indicating stable film properties up to annealing temperatures of 500 °C.

  11. Structural determination of argon trimer

    Directory of Open Access Journals (Sweden)

    Xiguo Xie


    Full Text Available Rare gas clusters are model systems to investigate structural properties at finite size. However, their structures are difficult to be determined with available experimental techniques because of the strong coupling between the vibration and the rotation. Here we experimentally investigated multiple ionization and fragmentation dynamics of argon trimer by ultrashort intense laser fields and reconstructed their structures with Coulomb explosion technique. The measured structure distribution was compared with our finite-temperature ab initio calculations and the discrepancy was discussed. The present study provides a guidance for the development of theoretical methods for exploring the geometric structure of rare gas clusters.

  12. The scintillation of liquid argon

    CERN Document Server

    Heindl, T; Hofmann, M; Krücken, R; Oberauer, L; Potzel, W; Wieser, J; Ulrich, A


    A spectroscopic study of liquid argon from the vacuum ultraviolet at 110 nm to 1000 nm is presented. Excitation was performed using continuous and pulsed 12 keV electron beams. The emission is dominated by the analogue of the so called 2nd excimer continuum. Various additional emission features were found. The time structure of the light emission has been measured for a set of well defined wavelength positions. The results help to interpret literature data in the context of liquid rare gas detectors in which the wavelength information is lost due to the use of wavelength shifters.

  13. Metal Nitrides for Plasmonic Applications

    DEFF Research Database (Denmark)

    Naik, Gururaj V.; Schroeder, Jeremy; Guler, Urcan;


    Metal nitrides as alternatives to metals such as gold could offer many advantages when used as plasmonic material. We show that transition metal nitrides can replace metals providing equally good optical performance for many plasmonic applications.......Metal nitrides as alternatives to metals such as gold could offer many advantages when used as plasmonic material. We show that transition metal nitrides can replace metals providing equally good optical performance for many plasmonic applications....

  14. Nitride quantum light sources (United States)

    Zhu, T.; Oliver, R. A.


    Prototype nitride quantum light sources, particularly single-photon emitters, have been successfully demonstrated, despite the challenges inherent in this complex materials system. The large band offsets available between different nitride alloys have allowed device operation at easily accessible temperatures. A wide range of approaches has been explored: not only self-assembled quantum dot growth but also lithographic methods for site-controlled nanostructure formation. All these approaches face common challenges, particularly strong background signals which contaminate the single-photon stream and excessive spectral diffusion of the quantum dot emission wavelength. If these challenges can be successfully overcome, then ongoing rapid progress in the conventional III-V semiconductors provides a roadmap for future progress in the nitrides.

  15. Argon purge gas cooled by chill box (United States)

    Spiro, L. W.


    Cooling argon purge gas by routing it through a shop-fabricated chill box reduces charring of tungsten inert gas torch head components. The argon gas is in a cooled state as it enters the torch and prevents buildup of char caused by the high concentrations of heat in the weld area during welding operations.

  16. The influence of substrate temperature on the tribo- mechanical properties of chromium nitride thin films (United States)

    Merie, V. V.; Negrea, G.; Modi, E.


    Different nitrides such as titanium nitride, chromium nitride and so on are used in a widespread range of applications such as cutting tools, medical implants, and microelectromechanical devices and all that due to their mechanical, physical and chemical properties. The aim of this study is to obtain chromium nitride thin films and to characterize them by atomic force microscopy investigations. The chromium nitride thin films were deposited by reactive magnetron sputtering on silicon substrates. During the deposition process, the discharge current, the argon and nitrogen flows, the pressure inside the chamber and the deposition time were kept constant. A chromium target with a purity of 99.95 % was used. Some of the films were deposited after a chromium buffer layer was previously deposited on the silicon substrate. The deposition was carried out when substrate temperature was at room temperature, at 300 and 500°C respectively. Once the films were deposited, atomic force microscopy investigations were performed in order to emphasize the influence of the substrate temperature on the topographical, mechanical and tribological characteristics. The results pointed out an important influence of the substrate temperature on topographical, mechanical and tribological properties of the investigated chromium nitride thin films.

  17. Influence of nitrogen admixture to argon on the ion energy distribution in reactive high power pulsed magnetron sputtering of chromium (United States)

    Breilmann, W.; Maszl, C.; Hecimovic, A.; von Keudell, A.


    Reactive high power impulse magnetron sputtering (HiPIMS) of metals is of paramount importance for the deposition of various oxides, nitrides and carbides. The addition of a reactive gas such as nitrogen to an argon HiPIMS plasma with a metal target allows the formation of the corresponding metal nitride on the substrate. The addition of a reactive gas introduces new dynamics into the plasma process, such as hysteresis, target poisoning and the rarefaction of two different plasma gases. We investigate the dynamics for the deposition of chromium nitride by a reactive HiPIMS plasma using energy- and time-resolved ion mass spectrometry, fast camera measurements and temporal and spatially resolved optical emission spectroscopy. It is shown that the addition of nitrogen to the argon plasma gas significantly changes the appearance of the localized ionization zones, the so-called spokes, in HiPIMS plasmas. In addition, a very strong modulation of the metal ion flux within each HiPIMS pulse is observed, with the metal ion flux being strongly suppressed and the nitrogen molecular ion flux being strongly enhanced in the high current phase of the pulse. This behavior is explained by a stronger return effect of the sputtered metal ions in the dense plasma above the racetrack. This is best observed in a pure nitrogen plasma, because the ionization zones are mostly confined, implying a very high local plasma density and consequently also an efficient scattering process.

  18. Opacity of Shock-Generated Argon Plasmas

    Institute of Scientific and Technical Information of China (English)

    王藩侯; 陈敬平; 周显明; 李西军; 经福谦; 孟续军; 孙永盛


    Argon plasmas with uniform density and temperature are generated by a planar shock wave through argon gas. The opacities of argon plasma, covering the thermodynamic states at temperatures of 1.4-2.2eV and in densities of 0.0083- 0.015 g/cm3, are investigated by measuring the emitted radiance versus time at several visible wavelengths. Comparison of the measured opacities with those calculated demonstrates that the average atom model can be used well to describe the essential transport behaviour of photons in argon plasma under the abovementioned thermodynamic condition. A simplified and self-consistent method to deduce the reflectivity R(λ) at the baseplate surface is applied. It demonstrates that the values of R(λ) are all around 0.4 in the experiments, which are basically in agreement with those given by Erskine previously (1994 J. Quant. Spectrosc. Radiat.Transfer 51 97).

  19. Clinical periodontics with the argon laser (United States)

    Finkbeiner, R. L.


    The argon laser has proven to be a valuable tool for the thermodynamic debridement of the periodontal lesion, incisions and tissue fusion. Illustrations of clinical applications and discussion of laser parameters will be provided.

  20. Argon Laser Photoablation for Postburn Conjunctival Pigmentation

    Directory of Open Access Journals (Sweden)

    Seong Joon Ahn


    Full Text Available We report a case of an ocular burn injury from boiling water which resulted in conjunctival pigmentation, 1 week following injury. For cosmetic purposes, 2 sessions of argon laser photoablation were performed. One month after laser treatment, conjunctival pigmentation had been successfully removed and the patient was very satisfied with the results. Argon laser photoablation may be an effective way to remove postburn conjunctival pigmentation.

  1. Fatigue modelling for gas nitriding

    Directory of Open Access Journals (Sweden)

    H. Weil


    Full Text Available The present study aims to develop an algorithm able to predict the fatigue lifetime of nitrided steels. Linear multi-axial fatigue criteria are used to take into account the gradients of mechanical properties provided by the nitriding process. Simulations on rotating bending fatigue specimens are made in order to test the nitrided surfaces. The fatigue model is applied to the cyclic loading of a gear from a simulation using the finite element software Ansys. Results show the positive contributions of nitriding on the fatigue strength

  2. Potassium-argon/argon-40-argon-39 geochronology of Cenozoic alkali basalts from the South China Sea

    Institute of Scientific and Technical Information of China (English)

    YAN Quanshu; SHI Xuefa; YANG Yaomin; WANG Kunshan


    Based on the isotopic chronologic results of Cenozoic alkali basalts from the South China Sea,the characteristics of volcanic activi-ty of the South China Sea after spreading were studied.The potassium - argon ages of eight alkali basalt samples from the South China Sea,and the argon - argon ages of two samples among them are reported.Apparent ages of the whole rock are 3.80 to 7.91 Ma with an average value of 5.43 Ma (potassium- argon,whole rock),and there is little difference among samples at the same location,e.g.,4.76~5.78 Ma for location S04-12.The argon - argon ages for the two samples are 6.06 and 4.71 Ma,which lie within the age scope of potassium - argon method.The dating results indicate that rock-forming age is from late Miocene to Pli-ocene,which is consistent with erupting event for alkali basalts from adjacent regions of the South China Sea.Volcanic activities occur after the cessation of spreading of the South China Sea,which are controlled by lithospheric fault and the spreading center formed during the spreading period of the South China Sea.These dating results,combined with geochemical characteristics of these basalts,the published chronological data for the South China Sea and its adjacent regions,and the updated geophysical data near Hainan Island,suggest that after the cessation of spreading of the South China Sea,there occur widely distributing magmatic activities which primarily is alkali basalt,and the volcanic activity continues to Quaternary.The activity may be relative to Hainan mantle plume originated from core/mantle boundary.

  3. Gallium nitride electronics (United States)

    Rajan, Siddharth; Jena, Debdeep


    In the past two decades, there has been increasing research and industrial activity in the area of gallium nitride (GaN) electronics, stimulated first by the successful demonstration of GaN LEDs. While the promise of wide band gap semiconductors for power electronics was recognized many years before this by one of the contributors to this issue (J Baliga), the success in the area of LEDs acted as a catalyst. It set the field of GaN electronics in motion, and today the technology is improving the performance of several applications including RF cell phone base stations and military radar. GaN could also play a very important role in reducing worldwide energy consumption by enabling high efficiency compact power converters operating at high voltages and lower frequencies. While GaN electronics is a rapidly evolving area with active research worldwide, this special issue provides an opportunity to capture some of the great advances that have been made in the last 15 years. The issue begins with a section on epitaxy and processing, followed by an overview of high-frequency HEMTs, which have been the most commercially successful application of III-nitride electronics to date. This is followed by review and research articles on power-switching transistors, which are currently of great interest to the III-nitride community. A section of this issue is devoted to the reliability of III-nitride devices, an area that is of increasing significance as the research focus has moved from not just high performance but also production-worthiness and long-term usage of these devices. Finally, a group of papers on new and relatively less studied ideas for III-nitride electronics, such as interband tunneling, heterojunction bipolar transistors, and high-temperature electronics is included. These areas point to new areas of research and technological innovation going beyond the state of the art into the future. We hope that the breadth and quality of articles in this issue will make it

  4. The effects of laser surface modification on the microstructure and properties of gas-nitrided 42CrMo4 steel (United States)

    Kulka, M.; Panfil, D.; Michalski, J.; Wach, P.


    Gas nitriding, together with gas carburizing and gas carbonitriding, was the most commonly used thermochemical treatment, resulting in many advantageous properties: high hardness, enhanced corrosion resistance, considerably improved wear resistance and fatigue strength. However, an unfavorable increase in the thickness of compound layer (ε+γ‧) close to the surface was observed after conventional gas nitriding. This was the reason for undesirable embrittlement and flaking. Therefore, a controlled gas nitriding was developed, reducing the thickness of compound layer. In this study, laser modification with or without re-melting was carried out after the controlled gas nitriding in order to change microstructure and to improve wear resistance. The effects of laser beam power on the dimensions of simple laser tracks were analyzed. It enabled to control the obtained microstructure and to select the laser processing parameters during producing the multiple tracks. Such a treatment was necessary to investigate wear resistance. Laser re-melting resulted in dissolving the majority of nitrides as well as in producing the martensitic structure in re-melted and heat-affected zones. This treatment required argon shielding in order to protect the surface against uncontrolled oxidation. Laser heat treatment without re-melting caused a modification of ε nitrides which became less porous and more compact. Simultaneously, it provided heat-affected zone with the partially martensitic structure of increased hardness below compound zone. Argon shielding was not necessary in this case because of the resistance of nitrides to oxidation during rapid heating and cooling. All the laser-modified layers, irrespective if the nitrided layer was re-melted or not, were characterized by the improved wear resistance compared to the typical gas-nitrided layer.

  5. Argon Collection And Purification For Proliferation Detection

    Energy Technology Data Exchange (ETDEWEB)

    Achey, R. [Savannah River Site (SRS), Aiken, SC (United States). Savannah River National Lab. (SRNL); Hunter, D. [Savannah River Site (SRS), Aiken, SC (United States). Savannah River National Lab. (SRNL)


    In order to determine whether a seismic event was a declared/undeclared underground nuclear weapon test, environmental samples must be taken and analyzed for signatures that are unique to a nuclear explosion. These signatures are either particles or gases. Particle samples are routinely taken and analyzed under the Comprehensive Nuclear-Test-Ban Treaty Organization (CTBTO) verification regime as well as by individual countries. Gas samples are analyzed for signature gases, especially radioactive xenon. Underground nuclear tests also produce radioactive argon, but that signature is not well monitored. A radioactive argon signature, along with other signatures, can more conclusively determine whether an event was a nuclear test. This project has developed capabilities for collecting and purifying argon samples for ultra-low-background proportional counting. SRNL has developed a continuous gas enrichment system that produces an output stream containing 97% argon from whole air using adsorbent separation technology (the flow diagram for the system is shown in the figure). The vacuum swing adsorption (VSA) enrichment system is easily scalable to produce ten liters or more of 97% argon within twelve hours. A gas chromatographic separation using a column of modified hydrogen mordenite molecular sieve has been developed that can further purify the sample to better than 99% purity after separation from the helium carrier gas. The combination of these concentration and purification systems has the capability of being used for a field-deployable system for collecting argon samples suitable for ultra-low-background proportional counting for detecting nuclear detonations under the On-Site Inspection program of the CTBTO verification regime. The technology also has applications for the bulk argon separation from air for industrial purposes such as the semi-conductor industry.

  6. Electrochemical nitridation of metal surfaces (United States)

    Wang, Heli; Turner, John A.


    Electrochemical nitridation of metals and the produced metals are disclosed. An exemplary method of electrochemical nitridation of metals comprises providing an electrochemical solution at low temperature. The method also comprises providing a three-electrode potentiostat system. The method also comprises stabilizing the three-electrode potentiostat system at open circuit potential. The method also comprises applying a cathodic potential to a metal.

  7. Optical characterization of gallium nitride

    NARCIS (Netherlands)

    Kirilyuk, Victoria


    Group III-nitrides have been considered a promising system for semiconductor devices since a few decades, first for blue- and UV-light emitting diodes, later also for high-frequency/high-power applications. Due to the lack of native substrates, heteroepitaxially grown III-nitride layers are usually

  8. Platinum nitride with fluorite structure

    Energy Technology Data Exchange (ETDEWEB)

    Yu, Rong; Zhang, Xiao-Feng


    The mechanical stability of platinum nitride has been studied using first-principles calculations. By calculating the single-crystal elastic constants, we show that platinum nitride can be stabilized in the fluorite structure, in which the nitrogen atoms occupy all the tetrahedral interstitial sites of the metal lattice. The stability is attributed to the pseudogap effect from analysis of the electronic structure.

  9. Attenuation of vacuum ultraviolet light in liquid argon

    CERN Document Server

    Neumeier, A; Oberauer, L; Potzel, W; Schönert, S; Dandl, T; Heindl, T; Ulrich, A; Wieser, J


    The transmission of liquid argon has been measured, wavelength resolved, for a wavelength interval from 118 to 250 nm. The wavelength dependent attenuation length is presented for pure argon. It is shown that no universal wavelength independent attenuation length can be assigned to liquid argon for its own fluorescence light due to the interplay between the wavelength dependent emission and absorption. A decreasing transmission is observed below 130 nm in both chemically cleaned and distilled liquid argon and assigned to absorption by the analogue of the first argon excimer continuum. For not perfectly cleaned argon a strong influence of impurities on the transmission is observed. Two strong absorption bands at 126.5 and 141.0 nm with approximately 2 and 4 nm width, respectively, are assigned to traces of xenon in argon. A broad absorption region below 180 nm is found for unpurified argon and tentatively attributed to the presence of water in the argon sample.

  10. Infrared spectra and electronic structure calculations for NN complexes with U, UN, and NUN in solid argon, neon, and nitrogen. (United States)

    Andrews, Lester; Wang, Xuefeng; Gong, Yu; Kushto, Gary P; Vlaisavljevich, Bess; Gagliardi, Laura


    Reactions of laser-ablated U atoms with N2 molecules upon codeposition in excess argon or neon at 4 K gave intense NUN and weak UN absorptions. Annealing produced progressions of new absorptions for the UN2(N2)1,2,3,4,5 and UN(N2)1,2,3,4,5,6 complexes. The neon-to-argon matrix shift decreases with increasing NN ligation and therefore the number of noble gas atoms left in the primary coordination sphere around the NUN molecule. Small matrix shifts are observed when the secondary coordination layers around the primary UN2(N2)1,2,3,4,5 and UN(N2)1,2,3,4,5,6 complexes are changed from neon-to-argon to nitrogen. Electronic structure, energy, and frequency calculations provide support for the identification of these complexes and the characterization of the N≡U≡N and U≡N core molecules as terminal uranium nitrides. Codeposition of U with pure nitrogen produced the saturated U(NN)7 complex, which UV irradiation converted to the NUN(NN)5 complex with slightly lower frequencies than found in solid argon.

  11. Functionalized boron nitride nanotubes (United States)

    Sainsbury, Toby; Ikuno, Takashi; Zettl, Alexander K


    A plasma treatment has been used to modify the surface of BNNTs. In one example, the surface of the BNNT has been modified using ammonia plasma to include amine functional groups. Amine functionalization allows BNNTs to be soluble in chloroform, which had not been possible previously. Further functionalization of amine-functionalized BNNTs with thiol-terminated organic molecules has also been demonstrated. Gold nanoparticles have been self-assembled at the surface of both amine- and thiol-functionalized boron nitride Nanotubes (BNNTs) in solution. This approach constitutes a basis for the preparation of highly functionalized BNNTs and for their utilization as nanoscale templates for assembly and integration with other nanoscale materials.

  12. Effects of Aqueous Vapour Consistence in Nitriding Furnace on the Quality of the Sintered Nitride

    Institute of Scientific and Technical Information of China (English)



    If the aqueous vapour consistence is too high(>0.7%),it is very disadvantageous to the sintered products in the nitriding furnace,when silcon nitride bonded silicon carbide products are synthesized by nitridation of silicon.

  13. ICARUS and status of liquid argon technology

    CERN Document Server

    Menegolli, Alessandro


    ICARUS T600 is the largest liquid Argon Time Projection Chamber (LAr TPC) detector ever realized. It operates underground at the LNGS laboratory in Gran Sasso. It has been smoothly running since summer 2010, collecting data with the CNGS (Cern to Gran Sasso) beam and with cosmic particles. Liquid Argon TPCs are indeed 'electronic bubble chambers', providing a completely uniform imaging calorimetry with unprecedented accuracy on such massive volumes. ICARUS T600 is internationally considered as a milestone towards the realization of the next generation of massive detectors (tens of ktons) for neutrino and rare event physics. Results will be presented on the data collected so far with the detector.

  14. Structure and Thermal Stability of Copper Nitride Thin Films

    Directory of Open Access Journals (Sweden)

    Guangan Zhang


    Full Text Available Copper nitride (Cu3N thin films were deposited on glass via DC reactive magnetron sputtering at various N2 flow rates and partial pressures with 150°C substrate temperature. X-ray diffraction and scanning electron microscopy were used to characterize the microstructure and morphology. The results show that the films are composed of Cu3N crystallites with anti-ReO3 structure. The microstructure and morphology of the Cu3N film strongly depend on the N2 flow rate and partial pressure. The cross-sectional micrograph of the film shows typical columnar, compact structure. The thermal stabilities of the films were investigated using vacuum annealing under different temperature. The results show that the introducing of argon in the sputtering process decreases the thermal stability of the films.

  15. Study of the Active Screen Plasma Nitriding

    Institute of Scientific and Technical Information of China (English)

    Zhao Cheng; C. X. Li; H. Dong; T. Bell


    Active screen plasma nitriding (ASPN) is a novel nitriding process, which overcomes many of the practical problems associated with the conventional DC plasma nitriding (DCPN). Experimental results showed that the metallurgical characteristics and hardening effect of 722M24 steel nitrided by ASPN at both floating potential and anodic (zero) potential were similar to those nitrided by DCPN. XRD and high-resolution SEM analysis indicated that iron nitride particles with sizes in sub-micron scale were deposited on the specimen surface in AS plasma nitriding. These indicate that the neutral iron nitride particles, which are sputtered from the active screen and transferred through plasma to specimen surface, are considered to be the dominant nitrogen carder in ASPN. The OES results show that NH could not be a critical species in plasma nitriding.

  16. Positive and negative pulsed corona in argon

    NARCIS (Netherlands)

    Veldhuizen, E.M. van; Rutgers, W.R.; Ebert, U.


    Photographs are obtained of corona discharges in argon at atmospheric pressure using a high resolution, intensified CCD camera. Positive and negative polarity is applied at the curved electrode in a point-plane gap and a plane-plane gap with a protruding point. Branching is observed in the positive

  17. Synthesis of ternary metal nitride nanoparticles using mesoporous carbon nitride as reactive template. (United States)

    Fischer, Anna; Müller, Jens Oliver; Antonietti, Markus; Thomas, Arne


    Mesoporous graphitic carbon nitride was used as both a nanoreactor and a reactant for the synthesis of ternary metal nitride nanoparticles. By infiltration of a mixture of two metal precursors into mesoporous carbon nitride, the pores act first as a nanoconfinement, generating amorphous mixed oxide nanoparticles. During heating and decomposition, the carbon nitride second acts as reactant or, more precisely, as a nitrogen source, which converts the preformed mixed oxide nanoparticles into the corresponding nitride (reactive templating). Using this approach, ternary metal nitride particles with diameters smaller 10 nm composed of aluminum gallium nitride (Al-Ga-N) and titanium vanadium nitride (Ti-V-N) were synthesized. Due to the confinement effect of the carbon nitride matrix, the composition of the resulting metal nitride can be easily adjusted by changing the concentration of the preceding precursor solution. Thus, ternary metal nitride nanoparticles with continuously adjustable metal composition can be produced.

  18. 46 CFR 151.50-36 - Argon or nitrogen. (United States)


    ... 46 Shipping 5 2010-10-01 2010-10-01 false Argon or nitrogen. 151.50-36 Section 151.50-36 Shipping... BULK LIQUID HAZARDOUS MATERIAL CARGOES Special Requirements § 151.50-36 Argon or nitrogen. (a) A cargo tank that contains argon or nitrogen and that has a maximum allowable working pressure of 172 kPa...

  19. Boron nitride converted carbon fiber (United States)

    Rousseas, Michael; Mickelson, William; Zettl, Alexander K.


    This disclosure provides systems, methods, and apparatus related to boron nitride converted carbon fiber. In one aspect, a method may include the operations of providing boron oxide and carbon fiber, heating the boron oxide to melt the boron oxide and heating the carbon fiber, mixing a nitrogen-containing gas with boron oxide vapor from molten boron oxide, and converting at least a portion of the carbon fiber to boron nitride.

  20. Hemocompatibility of titanium nitride. (United States)

    Dion, I; Baquey, C; Candelon, B; Monties, J R


    The left ventricular assist device is based on the principle of the Maillard-Wenkel rotative pump. The materials which make up the pump must present particular mechanical, tribological, thermal and chemical properties. Titanium nitride (TiN) because of its surface properties and graphite because of its bulk characteristics have been chosen. The present study evaluated the in vitro hemocompatibility of TiN coating deposited by the chemical vapor deposition process. Protein adsorption, platelet retention and hemolysis tests have been carried out. In spite of some disparities, the TiN behavior towards albumin and fibrinogen is interesting, compared with the one of a reference medical grade elastomer. The platelet retention test gives similar results as those achieved with the same elastomer. The hemolysis percentage is near to zero. TiN shows interesting characteristics, as far as mechanical and tribological problems are concerned, and presents very encouraging blood tolerability properties.

  1. Synthesis of amorphous carbon nitride by ion implantation

    Institute of Scientific and Technical Information of China (English)

    ChenZ.; OlofinjanaA.; BellJ


    N2+ were implanted into diamondlike carbon (DLC) films in an attempt to synthesizeamorphous carbon nitride. The DLC films were previously deposited on steel substrate by using anion beam sputtering deposition (IBSD) where a single Kaufman type ion gun with argon sourcewas used to sputter a graphite target and simultaneously bombard the growing film. Parallel to theion implantation route, amorphous carbon nitride films were also synthesized by directly using thereactive ion beam sputtering deposition (RIBSD) with nitrogen source to incorporate nitrogen intothe film. The structure and properties of the films were determined by using Raman spectroscopy,XPS and nano-indentation. The implantation of N2+ into a-C films offers a higher hardness thanthat directly synthesized by RIBSD, probably through an increase in sp3/sp2 ratio and in the pro-portion of nitrogen atoms chemically bonding to carbon atoms. The results show that althoughthere are differences in film composition, structure and properties between these two processes,both methods can be used for synthesis of nitrogen-containing amorphous DLC thin films whichsignificantly modify the substrate surface.

  2. Plasmonic titanium nitride nanostructures for perfect absorbers

    DEFF Research Database (Denmark)

    Guler, Urcan; Li, Wen-Wei; Kinsey, Nathaniel


    We propose a metamaterial based perfect absorber in the visible region, and investigate the performance of titanium nitride as an alternative plasmonic material. Numerical and experimental results reveal that titanium nitride performs better than gold as a plasmonic absorbing material...

  3. Abnormal epidermal changes after argon laser treatment

    Energy Technology Data Exchange (ETDEWEB)

    Neumann, R.A.; Knobler, R.M.; Aberer, E.; Klein, W.; Kocsis, F.; Ott, E. (Univ. of Vienna (Austria))


    A 26-year-old woman with a congenital port-wine stain on the forehead was treated three times at 2-month intervals with an argon laser. Six months after the last treatment, moderate blanching and mild scaling confined to the treated area was observed. A biopsy specimen of the treated area revealed a significant decrease in ectatic vessels. However, epidermal changes similar to those of actinic keratosis with disorganized cell layers and marked cytologic abnormalities were seen. Analysis of peripheral blood lymphocytes for a defect in DNA repair was negative. Multiple, argon laser-induced photothermal effects may be responsible for the changes observed in our case and may lead to premalignant epidermal transformation.

  4. Explanation of the memory effect in argon

    Directory of Open Access Journals (Sweden)

    Marković Vidosav


    Full Text Available Memory effect - the long time variation of the electrical breakdown time delay on the relaxation time td (τ was observed in argon 24 hours after relaxation times and explained by the long-lived metastable states remaining from the preceding glow. However, the quenching processes reducing the effective lifetime of metastable states several orders of magnitude below that relevant for the time scale of observation were neglected. By applying approximate gas phase models it was found that the early afterglow kinetics up to hundreds of milliseconds is dominated by the decay of molecular argon ions Ar2+ and the approximate value of their ambipolar diffusion coefficient is determined. After that, nitrogen atoms present as impurities and recombined on the cathode surface and/or field emission determine the breakdown time delay down to the cosmic rays and natural radioactivity level.

  5. ATLAS Liquid Argon Calorimeter Module Zero

    CERN Multimedia


    This module was built and tested with beam to validate the ATLAS electromagnetic calorimeter design. One original design feature is the folding. 10 000 lead plates and electrodes are folded into an accordion shape and immersed in liquid argon. As they cross the folds, particles are slowed down by the lead. As they collide with the lead atoms, electrons and photons are ejected. There is a knock-on effect and as they continue on into the argon, a whole shower is produced. The electrodes collect up all the electrons and this signal gives a measurement of the energy of the initial particle. The M0 was fabricated by French institutes (LAL, LAPP, Saclay, Jussieu) in the years 1993-1994. It was tested in the H6/H8 beam lines in 1994, leading to the Technical Design Report in 1996.

  6. Argon gas flow through glass nanopipette (United States)

    Takami, Tomohide; Nishimoto, Kiwamu; Goto, Tadahiko; Ogawa, Shuichi; Iwata, Futoshi; Takakuwa, Yuji


    We have observed the flow of argon gas through a glass nanopipette in vacuum. A glass nanopipette with an inner diameter of 100 nm and a shank length of 3 mm was set between vacuum chambers, and argon gas was introduced from the top of the nanopipette to the bottom. The exit pressure was monitored with an increase in entrance pressure in the range of 50-170 kPa. Knudsen flow was observed at an entrance pressure lower than 100 kPa, and Poiseuille flow was observed at an entrance pressure higher than 120 kPa. The proposed pressure-dependent gas flow method provides a means of evaluating the glass nanopipette before using it for various applications including nanodeposition to surfaces and femtoinjection to living cells.

  7. Cathodic Cage Plasma Nitriding: An Innovative Technique


    Sousa,R.R.M.; de Araújo, F. O.; J. A. P. da Costa; Brandim,A.S.; R. A. de Brito; C. Alves


    Cylindrical samples of AISI 1020, AISI 316, and AISI 420 steels, with different heights, were simultaneously treated by a new technique of ionic nitriding, entitled cathodic cage plasma nitriding (CCPN), in order to evaluate the efficiency of this technique to produce nitrided layers with better properties compared with those obtained using conventional ionic nitriding technique. This method is able to eliminate the edge effect in the samples, promoting a better uniformity of temperature, and...

  8. Influence of argon fraction on plasma parameters in H2-N2 mixture discharge with cathodic cage (United States)

    Naeem, Muhammad; Zaka-ul-Islam, Mujahid; Khattak, Zahid Iqbal; Shafiq, Muhammad; Zakaullah, Muhammad


    Low-pressure H2-N2 mixture pulsed DC plasmas with a cathodic cage (active screen) are widely used for plasma nitriding applications. In this study, the low-pressure H2-N2 mixture plasma with a cathodic cage generated by 50 Hz pulsed DC source is investigated with triple Langmuir probe and optical emission spectroscopy. The electron temperature (TeLPformula id="FI1"> math xmlns:mml="" display="inline" id="mml_eq1"> T e LP math> formula->) and electron number density (ne) are measured using a triple Langmuir probe (TLP). The excitation temperature (TexcOESformula id="FI2"> math xmlns:mml="" display="inline" id="mml_eq2"> T e xc OES math> formula->) is calculated spectroscopically using Boltzmann plot method whereas nitrogen dissociation fraction is estimated using actinometry as well as the intensity ratio method (IN (746.83 nm)/IN2(337.1 nm)). The results show that the electron and excitation temperatures, electron density and nitrogen atomic species density [N] all increase with the argon admixture, however, the important molecular ionized species density [N2+formula id="FI3"> math xmlns:mml="" display="inline" id="mml_eq3"> N 2 + math> formula->] significantly decreases beyond 30% addition. This study provides useful information about the influence of the argon addition on plasma parameters and active species generation. As a result it helps to optimize the plasma nitriding system as a function of argon admixture to avoid random trials in the processing.


    CERN Document Server

    Kukhtin, V; The ATLAS collaboration


    The performance of the ATLAS liquid argon endcap and forward calorimeters has been projected at the planned high luminosity LHC option HL-LHC by exposing small calorimeter modules of the electromagnetic, hadronic, and forward calorimeters to high intensity proton beams at IHEP/Protvino accelerator. The results of HV current and of pulse shape analysis, and also the dependence of signal amplitude on beam intensity are presented.

  10. An impact hypothesis for Venus argon anomalies (United States)

    Kaula, W. M.; Newman, W. I.


    The Ar-36+38 argon-excess anomally of Venus has been hypothesized to have its origin in the impact of an outer solar system body of about 100-km diameter. A critical evaluation is made of this hypothesis and its competitors; it is judged that its status must for the time being remain one of 'Sherlock Holmes' type, in that something so improbable must be accepted when all alternatives are eliminated.



    Marcinauskas, Liutauras; Grigonis, Alfonsas; Valincius, Vitas


    The amorphous carbon films were deposited on silicon-metal substrates by plasma jet chemical vapor deposition (PJCVD) and plasma enchanted CVD (PECVD). PJCVD carbon films have been prepared at atmospheric pressure in argon-acetylene and argon-hydrogen-acetylene plasma mixtures. The films deposited in Ar-C2H2 plasma are attributed to graphite-like carbon films. The formation of the nanocrystalline graphite was obtained in Ar-H2-C2H2 plasma. Addition of the hydrogen gas lead to the ...

  12. Homogeneous dispersion of gallium nitride nanoparticles in a boron nitride matrix by nitridation with urea. (United States)

    Kusunose, Takafumi; Sekino, Tohru; Ando, Yoichi


    A Gallium Nitride (GaN) dispersed boron nitride (BN) nanocomposite powder was synthesized by heating a mixture of gallium nitrate, boric acid, and urea in a hydrogen atmosphere. Before heat treatment, crystalline phases of urea, boric acid, and gallium nitrate were recognized, but an amorphous material was produced by heat treatment at 400 degrees C, and then was transformed into GaN and turbostratic BN (t-BN) by further heat treatment at 800 degrees C. TEM obsevations of this composite powder revealed that single nanosized GaN particles were homogeneously dispersed in a BN matrix. Homogeneous dispersion of GaN nanoparticles was thought to be attained by simultaneously nitriding gallium nitrate and boric acid to GaN and BN with urea.

  13. Argon diffusion from biotite at high temperature and pressure

    Institute of Scientific and Technical Information of China (English)

    陈道公; 贾命命; 李彬贤; 陆全明; 谢鸿森; 侯渭


    t The experiments of argon diffusion dynamics for biotite were carried out at 700 -1000℃ and 0.5 - 2,0 GPa and the diffusion coefficient and activation energy using different models have been calculated. The results indicate that the pressure does affect the argon diffusion and its effect is opposite to that of temperature. When p increases, the activation energy increases and diffusion coefficient decreases. The relation between pressure, closure temperature and cooling rate has been obtained. It is postulated that in low T and high p conditions, the argon diffusion from the environment to the system could occur and incur the appearance of the external argon in minerals.

  14. Argon isotope fractionation induced by stepwise heating (United States)

    Trieloff, Mario; Falter, Martina; Buikin, Alexei I.; Korochantseva, Ekaterina V.; Jessberger, Elmar K.; Altherr, Rainer


    Noble gas isotopes are widely used to elucidate the history of the rocks in which they have been trapped, either from distinct reservoirs or by accumulation following radioactive decay. To extract noble gases from their host rocks, stepwise heating is the most commonly used technique to deconvolve isotopically different components, e.g., atmospheric, in situ radiogenic, or excess radiogenic from mantle or crustal reservoirs. The accurate determination of the isotopic composition of these different components is of crucial importance, e.g., for ages obtained by 40Ar- 39Ar stepheating plateaus. However, diffusion theory-based model calculations predict that the stepwise thermal extraction process from mineral phases induces isotope fractionation and, hence, adulterates the original composition. Such effects are largely unconsidered, as they are small and a compelling experimental observation is lacking. We report the first unequivocal evidence for significant mass fractionation of argon isotopes during thermal extraction, observed on shungite, a carbon-rich Precambrian sedimentary rock. The degree of fractionation, as monitored by 38Ar/ 36Ar and 40Ar/ 36Ar ratios, very well agrees with theoretical predictions assuming an inverse square root dependence of diffusion coefficient and atomic mass, resulting in easier extraction of lighter isotopes. Hence, subatmospheric 40Ar/ 36Ar ratios obtained for argon extracted at low temperatures may not represent paleoatmospheric argon. Shungite argon resembles modern atmospheric composition, but constraints on the timing of trapping appear difficult to obtain, as shungites are multicomponent systems. In 40Ar- 39Ar stepwise heating, the isotope fractionation effect could cause systematic underestimations of plateau ages, between 0.15 and 0.4% depending on age, or considerably higher if samples contain appreciable atmospheric Ar. The magnitude of this effect is similar to the presently achieved uncertainties of this increasingly

  15. Near-infrared scintillation of liquid argon

    CERN Document Server

    Alexander, T; Lippincott, W H; Rubinov, P


    Since the 1970s it has been known that noble gases scintillate in the near infrared (NIR) region of the spectrum (0.7 $\\mu$m < $\\lambda$; < 1.5$\\mu$m). More controversial has been the question of the NIR light yield for condensed noble gases. We first present the motivation for using the NIR scintillation in liquid argon detectors, then briefly review early as well as more recent efforts and finally show encouraging preliminary results of a test performed at Fermilab.

  16. Near-infrared scintillation of liquid argon

    Energy Technology Data Exchange (ETDEWEB)

    Alexander, T. [Fermilab; Escobar, C. O. [Campinas State U.; Lippincott, W. H. [Fermilab; Rubinov, P. [Fermilab


    Since the 1970s it has been known that noble gases scintillate in the near infrared (NIR) region of the spectrum (0.7 $\\mu$m < $\\lambda$; < 1.5$\\mu$m). More controversial has been the question of the NIR light yield for condensed noble gases. We first present the motivation for using the NIR scintillation in liquid argon detectors, then briefly review early as well as more recent efforts and finally show encouraging preliminary results of a test performed at Fermilab.


    Institute of Scientific and Technical Information of China (English)

    Ruoyu Hong; Jianmin Ding; Hongzhong Li


    Silicon nitride nanoparticles were synthesized by radio-frequency (RF) plasma chemical vapor deposition (PCVD) using silicon tetrachloride and ammonia as precursors, and argon as carrier gas. By assuming chemical thermodynamic equilibrium in the system, a computer program based on chemical thermodynamics was used to calculate the compositions of the system at different initial concentrations and final temperatures. At first, five elements and thirty-four species were considered. The effects of temperatures, and concentrations of ammonia, hydrogen and nitrogen on the equilibrium compositions were analyzed. It was found that the optimal reaction temperature range should be 1200 to 1500 K to obtain the highest conversion and yield of Si3N4. The inlet position of ammonia should be lower than that of silicon tetrachloride, and both should be located at the tail of the plasma torch. The best mole ratio of ammonia to silicon tetrachloride was found to be about 6. Later, the influences of water (and oxygen) were considered, and 17 additional species were included in the computations. It was found that oxygen or water content in the raw materials should be as low as possible in order to have high nitride content in the produced Si3N4. Nitrogen or hydrogen might be used to replace some or even all the argon to improve the yield of silicon nitride and reduce the cost. The ratio of ammonia to silicon tetrachloride should be high enough to obtain high conversion, but not excessively high to reduce the oxygen content due to the existence of water in ammonia. The simulated results were verified by experiments.

  18. The new Polish nitriding and nitriding like processes in the modern technology

    Energy Technology Data Exchange (ETDEWEB)

    Has, Z.; Kula, P. [Technical Univ. of Lodz (Poland)


    Modern technological methods for making nitrided layers and low-friction combined layers have been described. The possibilities of structures and properties forming were analyzed as well as the area and examples of application were considered. Nitrided layers are applied in high loaded frictional couples, widely. They can be formed on steel or cast iron machine parts by the classic gas nitriding process or by modern numerous nitriding technologies.

  19. Performance of a liquid argon accordion hadronic calorimeter prototype

    Energy Technology Data Exchange (ETDEWEB)

    Gingrich, D.M. [Alberta Univ., Edmonton, AB (Canada); Greeniaus, G. [Alberta Univ., Edmonton, AB (Canada); Kitching, P. [Alberta Univ., Edmonton, AB (Canada); Olsen, B. [Alberta Univ., Edmonton, AB (Canada); Pinfold, J.L. [Alberta Univ., Edmonton, AB (Canada); Rodning, N.L. [Alberta Univ., Edmonton, AB (Canada); Boos, E. [Alma-Ata (Kazakhstan); Schaoutnikov, B.O. [Alma-Ata (Kazakhstan); Aubert, B. [Grenoble-1 Univ., 74 - Annecy (France). Lab. de Physique des Particules; Bazan, A. [Grenoble-1 Univ., 74 - Annecy (France). Lab. de Physique des Particules; Beaugiraud, B. [Grenoble-1 Univ., 74 - Annecy (France). Lab. de Physique des Particules; Boniface, J. [Grenoble-1 Univ., 74 - Annecy (France). Lab. de Physique des Particules; Colas, J. [Grenoble-1 Univ., 74 - Annecy (France). Lab. de Physique des Particules; Jezequel, S. [Grenoble-1 Univ., 74 - Annecy (France). Lab. de Physique des Particules; Leflour, T. [Grenoble-1 Univ., 74 - Annecy (France). Lab. de Physique des Particules; Maire, M. [Grenoble-1 Univ., 74 - Annecy (France). Lab. de Physique des Particules; Rival, F. [Grenoble-1 Univ., 74 - Annecy (France). Lab. de Physique des Particules; Stipcevic, M. [Grenoble-1 Univ., 74 - Annecy (France). Lab. de Physique des Particules; Thion, J. [Grenoble-1 Univ., 74 - Annecy (France). Lab. de Physique des Particules; VanDenPlas, D. [Grenoble-1 Univ., 74 - Annecy (France). Lab. de Physique des Particules; Wingerter-Seez, I. [Grenoble-1 Univ., 74 - Annecy (France). Lab. de Physique des Particules; Zolnierowski, Y.P. [Grenoble-1 Univ., 74 - Annecy (France). Lab. de Physique des Particules; Chmeissani, M. [Universidad Autonoma de Barcelona (Spain); Fernandez, E. [Universidad Autonoma de Barcelona (Spain); Garrido, L. [Universidad Autonoma de Barcelona (Spain); Martinez, M. [Universidad Autonoma de Barcelona (Spain); Padilla, C. [Universidad Autonoma de Barcelona (Spain); Gordon, H.A. [Brookhaven National Lab., Upton, NY (United States); RD3 Colla...


    A liquid argon hadronic calorimeter using the ``accordion`` geometry and the electrostatic transformer readout scheme has been tested at CERN, together with a liquid argon accordion electromagnetic prototype. The results obtained for pions on the linearity, the energy resolution and the uniformity of the calorimeter response are well within the requirements for operation at the LHC. ((orig.))

  20. Comparison of Diode and Argon Laser Lesions in Rabbit Retina

    Institute of Scientific and Technical Information of China (English)

    Hui Zhang; Xiaoxin Li; Bin Li; Jiping Da


    Purpose: To compare the histological alteration of retina with various spot intensities between diode and argon lasers in order to instruct the clinical use of 810 nm diode laser.Methods: Transpupillary retinal photocoagulations were performed on 42 eyes of 27pigmented rabbits. Histopathologic alteration of lesions in different intensities and different time intervals after irradiation produced by diode and argon laser was observed and compared using light microscopy. Areas of various lesions measured by image analysis system (CMIAS) were compared quantitatively.Results: Histopathologically, two-week-old grade 2 lesions produced by diode laser induced the disappearance of outer nuclear cells. More than a half of all showed reduction in number of outer nuclear layer cells in argon. Fibroblasts appeared in the diode grade 3lesions 5 days after irradiation. CMIAS data showed that all the areas of diode lesions immediately after photocoagulation were to be larger than those of argon laser lesions in the same spot intensity (P < 0.05). However, twenty-four hours after photocoagulation, the area of the diode lesions increased less than that of the argon laser lesions (8%vs.23%).Conclusion: The acute histological effect caused by 810 nm diode laser and argon green laser is similar,while the expansion of lesion area 24 hours after photocoagulation was less with the diode laser compared to the argon. This may be the first report in the literature regarding quantitative analysis of the delayed reaction of argon green lasers.

  1. Stopping Power of Solid Argon for Helium Ions

    DEFF Research Database (Denmark)

    Besenbacher, F.; Bøttiger, Jørgen; Grauersen, O.


    By means of the Rutherford-backscattering method, the stopping cross section of solid argon has been measured for 0.5–3 MeV helium ions to an accuracy of not, vert, similar3%. The results agree within the experimental accuracies with our earlier measurements for gaseous argon over the energy region...

  2. Indium gallium nitride multijunction solar cell simulation using silvaco atlas


    Garcia, Baldomero


    This thesis investigates the potential use of wurtzite Indium Gallium Nitride as photovoltaic material. Silvaco Atlas was used to simulate a quad-junction solar cell. Each of the junctions was made up of Indium Gallium Nitride. The band gap of each junction was dependent on the composition percentage of Indium Nitride and Gallium Nitride within Indium Gallium Nitride. The findings of this research show that Indium Gallium Nitride is a promising semiconductor for solar cell use. United...

  3. Improved installation prototype for measurement of low argon-37 activity (United States)

    Pakhomov, Sergei; Dubasov, Yuri


    On-site Inspection (OSI) is a key element of verification of State Parties' compliance with the Comprehensive Nuclear-Test-Ban Treaty (CTBT). An on-site inspection is launched to establish whether or not a nuclear explosion has been carried out. One of the most significant evidence of n underground nuclear explosion (UNE) is detection above background concentrations of argon-37 in near surface air. Argon-37 is formed in large amounts at interaction of neutrons of UNE with the potassium which is a part of the majority of rocks. Its estimated contents for the 100th days after explosion with a energy of 1000 t of TNT near a surface can vary from 1 to 1000 mBq/m3. The background concentrations of argon-37 in subsoil air vary 1 do100 mBq/m3. Traditionally, for argon-37 activity measurement the gas-proportional counters are used. But at Khlopin Radium institute the developments of the new type of highly sensitive and low-background installation capable to provide the required range of measurements of the argon-37 concentration are conducted. The liquid scintillation method of the registration of the low-energetic argon-37 electrons is the basic installation principle and as scintillator, the itself condensed air argon sample is used. Registration of scintillations of liquid argon is made by means of system from 3 PMT which cathodes are cooled near to the temperature of liquid nitrogen together with the measuring chamber in which placed the quartz glass ampule, containing the measured sample of the liquefied argon. For converse the short wavelength photons (λ = 127 nm) of liquid argon scintillations to more long-wave, corresponding to the range of PMT sensitivity, the polymer film with tetra-phenyl-butadiene (TPB) is provided. Even the insignificant impurities of nitrogen, oxygen and others gaseous in the liquid argon samples can to cause the quenching of scintillation, especially their slow components. To account this effect and it influence on change of registration

  4. Phase identification of iron nitrides and iron oxy-nitrides with Mossbauer spectroscopy

    NARCIS (Netherlands)

    Borsa, DM; Boerma, DO


    The Mossbauer spectroscopy of all known Fe nitrides is the topic of this paper. Most of the data were accumulated during a study of the growth of the various Fe nitride phases using molecular beam epitaxy of Fe in the presence of a flux of atomic N, or by post-nitriding freshly grown Fe layers also

  5. Composite Reinforcement using Boron Nitride Nanotubes (United States)


    Final 3. DATES COVERED (From - To) 11-Mar-2013 to 10-Mar-2014 4. TITLE AND SUBTITLE Composite Reinforcement using Boron Nitride Nanotubes...AVAILABILITY STATEMENT Approved for public release. 13. SUPPLEMENTARY NOTES 14. ABSTRACT Boron nitride nanotubes have been proposed as a...and titanium (Ti) metal clusters with boron nitride nanotubes (BNNT). First-principles density-functional theory plus dispersion (DFT-D) calculations

  6. Computational and experimental study of copper–gold nitride formation

    Energy Technology Data Exchange (ETDEWEB)

    Ponce-Cázares, I., E-mail: [Centro de Investigación Científica y de Educación Superior de Ensenada (CICESE), Carretera Tijuana-Ensenada No. 3918, A. Postal 360, 22860 Ensenada, B.C. (Mexico); Soto, G., E-mail: [Universidad Nacional Autónoma de México, Centro de Nanociencias y Nanotecnología, Km. 107 Carretera Tijuana-Ensenada, C.P. 22860 Ensenada, B.C. (Mexico); Moreno-Armenta, Ma. Guadalupe, E-mail: [Universidad Nacional Autónoma de México, Centro de Nanociencias y Nanotecnología, Km. 107 Carretera Tijuana-Ensenada, C.P. 22860 Ensenada, B.C. (Mexico); De la Cruz, W., E-mail: [Universidad Nacional Autónoma de México, Centro de Nanociencias y Nanotecnología, Km. 107 Carretera Tijuana-Ensenada, C.P. 22860 Ensenada, B.C. (Mexico)


    Highlights: • The new Cu{sub 3}Au-nitride compound was successfully grown by the sputtering method. • This material is Cu{sub 3}Au{sub 0.5}N with cubic system (Pm3m space group), where the gold randomly occupies half of the 1a Wyckoff sites. • The material was a pseudo-gap conductor with conductance as good as a heavily-doped semiconductor at room temperature. - Abstract: This work investigates the formation of a Cu{sub 3}Au-nitride alloy using experimental and computational methods. For this purpose, we prepared a custom-made Cu–Au target and then hit it with argon ions in the presence of molecular nitrogen that produced a film on Corning glass. This film was analyzed using spectroscopic and diffraction techniques. The four-point-probe method and Tauc plots were applied to determine the electrical and optical properties of this thin film. Using first principle calculations a structural model was constructed that validated our observations. The crystalline system that we used was cubic (Pm3m space group) with half the sites filled with Au randomly. The composition was close to Cu{sub 3}Au{sub 0.5}N. In agreement with the electrical measurements and calculations, the Cu{sub 3}Au{sub 0.5}N band structure was highly affected by the Au incorporation since the electrical resistance and carrier density were in the 10{sup −3} Ω cm and 10{sup 22} cm{sup −3} ranges, respectively, and the optical gap decreased 0.61 eV with respect to the Cu{sub 3}N. The material was a pseudo-gap conductor with conductance as good as a heavily-doped semiconductor at room temperature; this should give it great potential for use in the optoelectronics industry.

  7. Merging of high speed argon plasma jets

    Energy Technology Data Exchange (ETDEWEB)

    Case, A.; Messer, S.; Brockington, S.; Wu, L.; Witherspoon, F. D. [HyperV Technologies Corp., Chantilly, Virginia 22180 (United States); Elton, R. [University of Maryland, College Park, Maryland 20742 (United States)


    Formation of an imploding plasma liner for the plasma liner experiment (PLX) requires individual plasma jets to merge into a quasi-spherical shell of plasma converging on the origin. Understanding dynamics of the merging process requires knowledge of the plasma phenomena involved. We present results from the study of the merging of three plasma jets in three dimensional geometry. The experiments were performed using HyperV Technologies Corp. 1 cm Minirailguns with a preionized argon plasma armature. The vacuum chamber partially reproduces the port geometry of the PLX chamber. Diagnostics include fast imaging, spectroscopy, interferometry, fast pressure probes, B-dot probes, and high speed spatially resolved photodiodes, permitting measurements of plasma density, temperature, velocity, stagnation pressure, magnetic field, and density gradients. These experimental results are compared with simulation results from the LSP 3D hybrid PIC code.

  8. Commissioning of the ATLAS liquid argon calorimeters

    CERN Document Server

    Rezaie, Erfan

    ATLAS, a multi-purpose detector built at the LHC at CERN, requires an extensive commissioning campaign to be ready for proton-proton collisions. In this work, we focus on the commissioning of the liquid Argon (LAr) calorimeters, with emphasis on commissioning with cosmic rays. First we outline one phase of the commissioning work, which involves testing of the front-end electronics of the two endcap calorimeters. We then describe two cosmic ray generators as input to a Monte-Carlo simulation of cosmic rays in ATLAS, and compare their results. Finally, we explain a technique developed for this work which uses information from the Tile calorimeters to predict the timing of cosmic rays within the LAr calorimeters, because cosmic rays occur randomly in time whereas the electronics are clocked at [Special characters omitted.] . The results from this analysis tool are compared to default tools, using both simulated and real cosmic ray data in the calorimeters.

  9. Silicon nitride equation of state (United States)

    Brown, Robert C.; Swaminathan, Pazhayannur K.


    This report presents the development of a global, multi-phase equation of state (EOS) for the ceramic silicon nitride (Si3N4).1 Structural forms include amorphous silicon nitride normally used as a thin film and three crystalline polymorphs. Crystalline phases include hexagonal α-Si3N4, hexagonal β-Si3N4, and the cubic spinel c-Si3N4. Decomposition at about 1900 °C results in a liquid silicon phase and gas phase products such as molecular nitrogen, atomic nitrogen, and atomic silicon. The silicon nitride EOS was developed using EOSPro which is a new and extended version of the PANDA II code. Both codes are valuable tools and have been used successfully for a variety of material classes. Both PANDA II and EOSPro can generate a tabular EOS that can be used in conjunction with hydrocodes. The paper describes the development efforts for the component solid phases and presents results obtained using the EOSPro phase transition model to investigate the solid-solid phase transitions in relation to the available shock data that have indicated a complex and slow time dependent phase change to the c-Si3N4 phase. Furthermore, the EOSPro mixture model is used to develop a model for the decomposition products; however, the need for a kinetic approach is suggested to combine with the single component solid models to simulate and further investigate the global phase coexistences.

  10. Nucleation of iron nitrides during gaseous nitriding of iron; the effect of a preoxidation treatment

    DEFF Research Database (Denmark)

    Friehling, Peter B.; Poulsen, Finn Willy; Somers, Marcel A.J.


    grains. On prolonged nitriding, immediate nucleation at the surface of iron grains becomes possible. Calculated incubation times for the nucleation of gamma'-Fe4N1-x during nitriding are generally longer than those observed experimentally in the present work. The incubation time is reduced dramatically......The nucleation of iron nitrides during gaseous nitriding has been investigated using light microscopy and X-ray diffraction. Initially, the nucleation of gamma'-Fe4N1-x on a pure iron surface starts at grain boundaries meeting the surface, from where the nitride grains grow laterally into the iron...

  11. Argon laser induced changes to the carbonate content of enamel

    Energy Technology Data Exchange (ETDEWEB)

    Ziglo, M.J. [Orthodontic Graduate Program, Faculty of Medicine and Dentistry, University of Alberta, Private Practice, Regina, Saskatchewan (Canada); Nelson, A.E., E-mail: [Department of Chemical and Materials Engineering, Faculty of Engineering, University of Alberta (Canada); Heo, G.; Major, P.W. [Orthodontic Graduate Program, Faculty of Medicine and Dentistry, University of Alberta (Canada)


    Argon laser irradiation can be used to cure orthodontic brackets onto teeth in significantly less time than conventional curing lights. In addition, it has been shown that the argon laser seems to impart a demineralization resistance to the enamel. The purpose of this study was to use surface science techniques to ascertain if this demineralization resistance is possibly a result of a decrease in the carbonate content of enamel. Eleven mandibular third molars previously scheduled for extraction were collected and used in the present study. The teeth were sectioned in two and randomly assigned to either the argon laser (457-502 nm; 250 mW cm{sup -2}) or the control (no treatment) group. The sections assigned to the argon laser group were cured for 10 s and analyzed. To exaggerate any potential changes the experimental sections were then exposed to a further 110 s of argon laser irradiation. Surface analysis was performed using X-ray photoelectron spectroscopy (XPS) and time-of-flight secondary ion mass spectrometry (ToF-SIMS). The results showed no statistically significant change in the carbonate content of enamel after argon laser irradiation (p > 0.05). Thus, it is suggested that any demineralization resistance imparted to the enamel surface by argon laser irradiation is not due to alterations in carbonate content.

  12. Practical reactor production of {sup 41}Ar from argon clathrate

    Energy Technology Data Exchange (ETDEWEB)

    Mercer, J.R. E-mail:; Duke, M.J.M.; McQuarrie, S.A


    The radionuclide {sup 41}Ar has many ideal properties as a gas flow tracer. However, the modest cross-section of {sup 40}Ar for thermal neutron activation makes preparation of suitable activities of {sup 41}Ar technically difficult particularly for low flux reactors. Argon can however be trapped in a molecular complex called a clathrate that can then be irradiated. We prepared argon clathrate and explored its irradiation and stability characteristics. Argon clathrate can be used to provide gigabecquerel quantities of {sup 41}Ar even with low power reactors.

  13. Modeling Electronegative Impurity Concentrations in Liquid Argon Detectors (United States)

    Tang, Wei; Li, Yichen; Thorn, Craig; Qian, Xin


    Achieving long electron lifetime is crucial to reach the high performance of large Liquid Argon Time Projection Chamber (LArTPC) envisioned for next generation neutrino experiments. We have built up a quantitative model to describe the impurity distribution and transportation in a cryostat. Henrys constants of Oxygen and water, which describe the partition of impurities between gas argon and liquid argon, have been deduced through this model with the measurements in BNL 20-L LAr test stand. These results indicate the importance of the gas purification system and prospects on large LArTPC detectors will be discussed.

  14. PECVD silicon nitride diaphragms for condenser microphones

    NARCIS (Netherlands)

    Scheeper, P.R.; Voorthuyzen, J.A.; Bergveld, P.


    The application of plasma-enhanced chemical vapour deposited (PECVD) silicon nitride as a diaphragm material for condenser microphones has been investigated. By means of adjusting the SiH4/NH3 gas-flow composition, silicon-rich silicon nitride films have been obtained with a relatively low tensile s

  15. Atomic Resolution Microscopy of Nitrides in Steel

    DEFF Research Database (Denmark)

    Danielsen, Hilmar Kjartansson


    MN and CrMN type nitride precipitates in 12%Cr steels have been investigated using atomic resolution microscopy. The MN type nitrides were observed to transform into CrMN both by composition and crystallography as Cr diffuses from the matrix into the MN precipitates. Thus a change from one...

  16. Method of preparation of uranium nitride (United States)

    Kiplinger, Jaqueline Loetsch; Thomson, Robert Kenneth James


    Method for producing terminal uranium nitride complexes comprising providing a suitable starting material comprising uranium; oxidizing the starting material with a suitable oxidant to produce one or more uranium(IV)-azide complexes; and, sufficiently irradiating the uranium(IV)-azide complexes to produce the terminal uranium nitride complexes.

  17. Thermodynamics, kinetics and process control of nitriding

    DEFF Research Database (Denmark)

    Mittemeijer, Eric J.; Somers, Marcel A. J.


    , the nitriding result is determined largely by the kinetics of the process. The nitriding kinetics have been shown to be characterised by the occurring local near-equilibria and stationary states at surfaces and interfaces, and the diffusion coefficient of nitrogen in the various phases, for which new data have...

  18. Low temperature anodic bonding to silicon nitride

    DEFF Research Database (Denmark)

    Weichel, Steen; Reus, Roger De; Bouaidat, Salim;


    Low-temperature anodic bonding to stoichiometric silicon nitride surfaces has been performed in the temperature range from 3508C to 4008C. It is shown that the bonding is improved considerably if the nitride surfaces are either oxidized or exposed to an oxygen plasma prior to the bonding. Both bulk...

  19. Cathodic Cage Plasma Nitriding: An Innovative Technique

    Directory of Open Access Journals (Sweden)

    R. R. M. de Sousa


    Full Text Available Cylindrical samples of AISI 1020, AISI 316, and AISI 420 steels, with different heights, were simultaneously treated by a new technique of ionic nitriding, entitled cathodic cage plasma nitriding (CCPN, in order to evaluate the efficiency of this technique to produce nitrided layers with better properties compared with those obtained using conventional ionic nitriding technique. This method is able to eliminate the edge effect in the samples, promoting a better uniformity of temperature, and consequently, a smaller variation of the thickness/height relation can be obtained. The compound layers were characterized by X-ray diffraction, optical microscopy, and microhardness test profile. The results were compared with the properties of samples obtained with the conventional nitriding, for the three steel types. It was verified that samples treated by CCPN process presented, at the same temperature, a better uniformity in the thickness and absence of the edge effect.

  20. Hard carbon nitride and method for preparing same (United States)

    Haller, E.E.; Cohen, M.L.; Hansen, W.L.


    Novel crystalline [alpha](silicon nitride-like)-carbon nitride and [beta](silicon nitride-like)-carbon nitride are formed by sputtering carbon in the presence of a nitrogen atmosphere onto a single crystal germanium or silicon, respectively, substrate. 1 figure.

  1. Solvothermal synthesis: a new route for preparing nitrides

    CERN Document Server

    Demazeau, G; Denis, A; Largeteau, A


    Solvothermal synthesis appears to be an interesting route for preparing nitrides such as gallium nitride and aluminium nitride, using ammonia as solvent. A nitriding additive is used to perform the reaction and, in the case of gallium nitride, is encapsulated by melt gallium. The syntheses are performed in the temperature range 400-800 deg. C and in the pressure range 100-200 MPa. The synthesized powders are characterized by x-ray diffraction and scanning electron microscopy. Finely divided gallium nitride GaN and aluminium nitride AlN, both with wurtzite-type structure, can be obtained by this route.

  2. Study of nuclear recoils in liquid argon with monoenergetic neutrons

    CERN Document Server

    Regenfus, C; Amsler, C; Creus, W; Ferella, A; Rochet, J; Walter, M


    For the development of liquid argon dark matter detectors we assembled a setup in the laboratory to scatter neutrons on a small liquid argon target. The neutrons are produced mono-energetically (E_kin=2.45 MeV) by nuclear fusion in a deuterium plasma and are collimated onto a 3" liquid argon cell operating in single-phase mode (zero electric field). Organic liquid scintillators are used to tag scattered neutrons and to provide a time-of-flight measurement. The setup is designed to study light pulse shapes and scintillation yields from nuclear and electronic recoils as well as from {\\alpha}-particles at working points relevant to dark matter searches. Liquid argon offers the possibility to scrutinise scintillation yields in noble liquids with respect to the populations of the two fundamental excimer states. Here we present experimental methods and first results from recent data towards such studies.

  3. Thermal decomposition of barium valerate in argon

    DEFF Research Database (Denmark)

    Torres, P.; Norby, Poul; Grivel, Jean-Claude


    degrees C and evidence was found for the solidification of the melt at 380-440 degrees C, i.e. simultaneously with the onset of decomposition. Between 400 degrees C and 520 degrees C (Ba(C4H9CO2)(2) decomposes in two main steps, first into BaCO3 with release of C4H9COC4H9 (5-nonanone), whereas final......The thermal decomposition of barium valerate (Ba(C4H9CO2)(2)/Ba-pentanoate) was studied in argon by means of thermogravimetry, differential thermal analysis, IR-spectroscopy, X-ray diffraction and hot-stage optical microscopy. Melting takes place in two different steps, at 200 degrees C and 280...... conversion to BaO takes place with release of CO2. Elemental carbon that is left as a by-product is finally slowly burned by the residual oxygen present in the Ar atmosphere. (C) 2015 Elsevier B.V. All rights reserved....

  4. Liquid argon calorimeter performance at high rates

    CERN Document Server

    Seifert, F; The ATLAS collaboration


    The expected increase of luminosity at HL-LHC by a factor of ten with respect to LHC luminosities has serious consequences for the signal reconstruction, radiation hardness requirements and operations of the ATLAS liquid argon calorimeters in the endcap, respectively forward region. Small modules of each type of calorimeter have been built and exposed to a high intensity proton beam of 50 GeV at IHEP/Protvino. The beam is extracted via the bent crystal technique, offering the unique opportunity to cover intensities ranging from $10^6$ p/s up to $10^{12}$ p/s. This exceeds the deposited energy per time expected at HL-LHC by more than a factor of 100. The correlation between beam intensity and the read-out signal has been studied. The data show clear indications of pulse shape distortion due to the high ionization build-up, in agreement with MC expectations. This is also confirmed from the dependence of the HV currents on beam intensity.

  5. Electron avalanches in liquid argon mixtures

    Energy Technology Data Exchange (ETDEWEB)

    Kim, J.G.; Dardin, S.M.; Kadel, R.W.; Kadyk, J.A.; Wenzel, W.B.; Peskov, V.


    We have observed stable avalanche gain in liquid argon when mixed with small amounts of xenon in the high electric field (>7 MV/cm) near the point of a chemically etched needle in a point-plane geometry. We identify two gain mechanisms, one pressure dependent, and the other independent of the applied pressure. We conclude that the pressure dependent signals are from avalanche gain in gas bubbles at the tip of the needle, while the pressure independent pulses are from avalanche gain in liquid. We measure the decay time spectra of photons from both types of avalanches. The decay times from the pressure dependent pulses decrease (increase) with the applied pressure (high voltage), while the decay times from the pressure independent pulses are approximately independent of pressure or high voltage. For our operating conditions, the collected charge distribution from avalanches is similar for 60 keV or 122 keV photon sources. With krypton additives, instead of Xe, we measure behavior consistent with only the pressure dependent pulses. Neon and TMS were also investigated as additives, and designs for practical detectors were tested.

  6. Liquid Argon Calorimeter performance at High Rates

    CERN Document Server

    Seifert, F; The ATLAS collaboration


    The expected increase of luminosity at HL-LHC by a factor of ten with respect to LHC luminosities has serious consequences for the signal reconstruction, radiation hardness requirements and operations of the ATLAS liquid argon calorimeters in the endcap, respectively forward region. Small modules of each type of calorimeter have been built and exposed to a high intensity proton beam of 50 GeV at IHEP/Protvino. The beam is extracted via the bent crystal technique, offering the unique opportunity to cover intensities ranging from $10^6$ p/s up to $3\\cdot10^{11}$ p/s. This exceeds the deposited energy per time expected at HL-LHC by more than a factor of 100. The correlation between beam intensity and the read-out signal has been studied. The data show clear indications of pulse shape distortion due to the high ionization build-up, in agreement with MC expectations. This is also confirmed from the dependence of the HV currents on beam intensity.

  7. A Study of the Residual 39Ar Content in Argon from Underground Sources

    CERN Document Server

    Xu, J; Galbiati, C; Goretti, A; Guray, G; Hohman, T; Holtz, D; Ianni, A; Laubenstein, M; Loer, B; Love, C; Martoff, C J; Montanari, D; Mukhopadhyay, S; Nelson, A; Rountree, S D; Vogelaar, R B; Wright, A


    The discovery of argon from underground sources with significantly less 39Ar than atmospheric argon was an important step in the development of direct-detection dark matter experiments using argon as the active target. We report on the design and operation of a low background detector with a single phase liquid argon target that was built to study the 39Ar content of the underground argon. Underground argon from the Kinder Morgan CO2 plant in Cortez, Colorado was determined to have less than 0.65% of the 39Ar activity in atmospheric argon.

  8. Size Determination of Argon Clusters from a Rayleigh Scattering Experiment

    Institute of Scientific and Technical Information of China (English)

    LEI An-Le; ZHAI Hua-Jin; LIU Bing-Chen; LI Zhong; NI Guo-Yuan; XU Zhi-Zhan


    Argon clusters are produced in the process of adiabatic expansion of a high backing pressure gas into vacuum through a nozzle. The cluster size is determined by a Rayleigh scattering measurement. The scattered signal measured is proportional to the 2.78th power of gas stagnation pressure. The average cluster sizes vary from 100 to more than 12000 atoms/cluster with the argon gas backing pressures ranging between 3 to 45 atm.

  9. Power Consideration for Pulsed Discharges in Potassium Seeded Argon

    Institute of Scientific and Technical Information of China (English)

    XIA Sheng-Guo; HE Jun-Jia; LIU Ke-Fu


    Minimization of energy consumed in plasma generation is critical for applications, in which a large volume of plasmas is needed. We suggest that a high electron density atmospheric pressure plasmas can be generated by pulsed discharges in potassium seeded argon at an elevated temperature with a very small power input. The ionization efficiency and power budget of pulsed discharges in such plasmas are analytically studied. The results show that ionization efficiency of argon, especially at small reduced electric field E/N (the ratio of the electric field to the gas number density), is improved effectively in the presence of small amount of potassium additives. Power input of pulsed discharge to sustain a prescribed average level of ionization in potassium seeded argon is three orders of magnitude lower than that in pure argon. Further, unlike in pure argon, it is found that very short high-voltage pulses with very high repetition rates are unnecessary in potassium seeded argon. A pulse with 100ns of pulse duration, 5kHz of repetition rate, and 2Td (1 Td = 1 ×10-21 Vm2) of E/N is enough to sustain an electron density of 10l9m-3 in 1 atm 1500 K Ar+0.1% K mixture, with a very small power input of about 0.08 × 104 W/m3.

  10. Process for the production of metal nitride sintered bodies and resultant silicon nitride and aluminum nitride sintered bodies (United States)

    Yajima, S.; Omori, M.; Hayashi, J.; Kayano, H.; Hamano, M.


    A process for the manufacture of metal nitride sintered bodies, in particular, a process in which a mixture of metal nitrite powders is shaped and heated together with a binding agent is described. Of the metal nitrides Si3N4 and AIN were used especially frequently because of their excellent properties at high temperatures. The goal is to produce a process for metal nitride sintered bodies with high strength, high corrosion resistance, thermal shock resistance, thermal shock resistance, and avoidance of previously known faults.

  11. Method of synthesizing cubic system boron nitride

    Energy Technology Data Exchange (ETDEWEB)

    Yuzu, S.; Sumiya, H.; Degawa, J.


    A method is described for synthetically growing cubic system boron nitride crystals by using boron nitride sources, solvents for dissolving the boron nitride sources, and seed crystals under conditions of ultra-high pressure and high temperature for maintaining the cubic system boron nitride stable. The method comprises the following steps: preparing a synthesizing vessel having at least two chambers, arrayed in order in the synthesizing vessel so as to be heated according to a temperature gradient; placing the solvents having different eutectic temperatures in each chamber with respect to the boron nitride sources according to the temperature gradient; placing the boron nitride source in contact with a portion of each of the solvents heated at a relatively higher temperature and placing at least a seed crystal in a portion of each of the solvents heated at a relatively lower temperature; and growing at least one cubic system boron nitride crystal in each of the solvents in the chambers by heating the synthesizing vessel for establishing the temperature gradient while maintaining conditions of ultra-high pressure and high temperature.

  12. Aspects of the practical application of titanium alloys after low temperature nitriding glow discharge in hydrogen- free -gas media (United States)

    Mashovets, N. S.; Pastukh, I. M.; Voloshko, S. M.


    X-ray diffraction analysis, X-ray photoelectron spectroscopy, and Electron Auger-spectroscopy investigation of phase transformation on the surface of the VT8 titanium alloy after a low temperature hydrogen-free nitriding in a glow discharge. Operational characteristics of titanium alloys defined physical-mechanical characteristics of the surface and their phase composition, which depend on the process parameters of nitriding. Surface modification of titanium alloys were carried out by low-temperature nitriding in a glow discharge in hydrogen-free environment. The main advantage of this method lies in the absence of hydrogen embrittlement and complete environmental safety process. Application of the glow discharge can not only speed up the process by the order of the diffusion surface saturation with nitrogen, but also significantly alters the kinetics of the process and quality of the nitrided layer, in particular its physio-mechanical properties and phase composition. For research purposes, the standards from an α + β alloy Ti-Al6-Cr2-Mo2,5 (VT8) were used. Research into the phase composition was performed by X-ray diffraction, X-ray photoelectron spectroscopy (XPS) and Auger electron spectroscopy (AES). Stratified analysis by AES was conducted by etching the surface of the samples' argon ion beam with diameters of 1.5 mm with an energy of 3000 eV and a current density of 400 mA/cm2. The above material shows the promise of the technology of low-temperature hydrogen-nitriding by glow discharge. This greatly expands the range of practical applications of titanium alloys. In addition, changing the technological mode allows you to manage a wide range of modified phase composition of the surface layer and as a result - to form the surface of titanium parts, taking into account the conditions of the subsequent operation.

  13. Transparent polycrystalline cubic silicon nitride (United States)

    Nishiyama, Norimasa; Ishikawa, Ryo; Ohfuji, Hiroaki; Marquardt, Hauke; Kurnosov, Alexander; Taniguchi, Takashi; Kim, Byung-Nam; Yoshida, Hidehiro; Masuno, Atsunobu; Bednarcik, Jozef; Kulik, Eleonora; Ikuhara, Yuichi; Wakai, Fumihiro; Irifune, Tetsuo


    Glasses and single crystals have traditionally been used as optical windows. Recently, there has been a high demand for harder and tougher optical windows that are able to endure severe conditions. Transparent polycrystalline ceramics can fulfill this demand because of their superior mechanical properties. It is known that polycrystalline ceramics with a spinel structure in compositions of MgAl2O4 and aluminum oxynitride (γ-AlON) show high optical transparency. Here we report the synthesis of the hardest transparent spinel ceramic, i.e. polycrystalline cubic silicon nitride (c-Si3N4). This material shows an intrinsic optical transparency over a wide range of wavelengths below its band-gap energy (258 nm) and is categorized as one of the third hardest materials next to diamond and cubic boron nitride (cBN). Since the high temperature metastability of c-Si3N4 in air is superior to those of diamond and cBN, the transparent c-Si3N4 ceramic can potentially be used as a window under extremely severe conditions. PMID:28303948

  14. Communication: Trapping a proton in argon: Spectroscopy and theory of the proton-bound argon dimer and its solvation (United States)

    McDonald, D. C.; Mauney, D. T.; Leicht, D.; Marks, J. H.; Tan, J. A.; Kuo, J.-L.; Duncan, M. A.


    Ion-molecule complexes of the form H+Arn are produced in pulsed-discharge supersonic expansions containing hydrogen and argon. These ions are analyzed and mass-selected in a reflectron spectrometer and studied with infrared laser photodissociation spectroscopy. Infrared spectra for the n = 3-7 complexes are characterized by a series of strong bands in the 900-2200 cm-1 region. Computational studies at the MP2/aug-cc-pVTZ level examine the structures, binding energies, and infrared spectra for these systems. The core ion responsible for the infrared bands is the proton-bound argon dimer, Ar-H+-Ar, which is progressively solvated by the excess argon. Anharmonic vibrational theory is able to reproduce the vibrational structure, identifying it as arising from the asymmetric proton stretch in combination with multiple quanta of the symmetric argon stretch. Successive addition of argon shifts the proton vibration to lower frequencies, as the charge is delocalized over more ligands. The Ar-H+-Ar core ion has a first solvation sphere of five argons.

  15. New argon-argon (40Ar/39Ar) radiometric age dates from selected subsurface basalt flows at the Idaho National Laboratory, Idaho (United States)

    Hodges, Mary K.; Turrin, Brent D.; Champion, Duane E.; Swisher, Carl C.


    In 2011, the U.S. Geological Survey, in cooperation with the U.S. Department of Energy, collected samples for 12 new argon-argon radiometric ages from eastern Snake River Plain olivine tholeiite basalt flows in the subsurface at the Idaho National Laboratory. The core samples were collected from flows that had previously published paleomagnetic data. Samples were sent to Rutgers University for argon-argon radiometric dating analyses.

  16. Residual Stress Induced by Nitriding and Nitrocarburizing

    DEFF Research Database (Denmark)

    Somers, Marcel A.J.


    The present chapter is devoted to the various mechanisms involved in the buildup and relief of residual stress in nitrided and nitrocarburized cases. The work presented is an overview of model studies on iron and iron-based alloys. Subdivision is made between the compound (or white) layer......, developing at the surfce and consisting of iron-based (carbo)nitrides, and the diffusion zone underneath, consisting of iron and alloying element nitrides dispersed in af ferritic matrix. Microstructural features are related directly to the origins of stress buildup and stres relief....

  17. Synthesis of ternary nitrides by mechanochemical alloying

    DEFF Research Database (Denmark)

    Jacobsen, C.J.H.; Zhu, J.J.; Lindelov, H.;


    Ternary metal nitrides ( of general formula MxM'N-y(z)) attract considerable interest because of their special mechanical, electrical, magnetic, and catalytic properties. Usually they are prepared by ammonolysis of ternary oxides (MxM'O-y(m)) at elevated temperatures. We show that ternary...... nitrides by mechanochemical alloying of a binary transition metal nitride (MxN) with an elemental transition metal. In this way, we have been able to prepare Fe3Mo3N and Co3Mo3N by ball-milling of Mo2N with Fe and Co, respectively. The transformation sequence from the starting materials ( the binary...

  18. Plasma Nitriding of Low Alloy Sintered Steels

    Institute of Scientific and Technical Information of China (English)

    Shiva Mansoorzadeh; Fakhreddin Ashrafizadeh; Xiao-Ying Li; Tom Bell


    Fe-3Cr-0.5Mo-0.3C and Fe-3Cr-1.4Mn-0.5Mo-0.367C sintered alloys were plasma nitrided at different temperatures. Characterization was performed by microhardness measurement, optical microscopy, SEM and XRD. Both materials had similar nitriding case properties. 1.4% manganese did not change the as-sintered microstructure considerably.It was observed that monophase compound layer, γ, formed with increasing temperature. Compound layer thickness increased with increasing temperature while nitriding depth increased up to a level and then decreased. Core softening was more pronounced at higher temperature owing to cementite coarsening.

  19. Evolution of Martian atmospheric argon: Implications for sources of volatiles (United States)

    Hutchins, Kevin S.; Jakosky, Bruce M.

    We have examined processes affecting isotopes of argon (36Ar, 38Ar, 40Ar) in order to determine important atmospheric sources and sinks. Our simple model for argon evolution incorporates production of radiogenic argon in the mantle, outgassing of all argon species by extrusive and intrusive volcanism, and loss to space by knock-on sputtering above the exobase. Sputtering has been shown previously to be an important loss process for atmospheric species, especially isotopes of noble gases, which have few other mechanisms of escape. The integrated evolution of argon (36Ar, 38Ar, and 40Ar, respectively) is modeled in terms of these variables: (1) the planetary concentration of potassium, (2) the fraction of juvenile argon released catastrophically during the first 600 Myr., (3) potential variation in the time-history of sputtering loss from that suggested by Luhmann et al. [1992], and (4) the volume of total outgassing to the surface as compared to outgassing contributed by volcanic release. Our results indicate that Mars has lost between 85-95% of 36Ar and 70-88% of outgassed 40Ar. Due to this substantial loss, the planet must have outgassed the equivalent of between 10 and 100 times the total volume of gases released by extrusive and intrusive volcanics. This indicates that volcanic outgassing, alone, is insufficient to explain the present-day abundances of 36Ar and 40Ar in the Martian atmosphere. Similar calculations for 20Ne suggest outgassed volumes of between 100 and 1800 times in excess of that due to volcanism. This results in a distinct Ne/Ar elemental fractionation, with a preference for outgassing argon, of the order of 10 to 17. Although the results must be evaluated within the model uncertainties, the results are compelling in that they unequivocally show the existence of additional sources of atmospheric volatiles and helps define a means to identify them.

  20. Materials synthesis: Two-dimensional gallium nitride (United States)

    Koratkar, Nikhil A.


    Graphene is used as a capping sheet to synthesize 2D gallium nitride by means of migration-enhanced encapsulation growth. This technique may allow the stabilization of 2D materials that are not amenable to synthesis by traditional methods.

  1. Titanium nitride nanoparticles for therapeutic applications

    DEFF Research Database (Denmark)

    Guler, Urcan; Kildishev, Alexander V.; Boltasseva, Alexandra;


    Titanium nitride nanoparticles exhibit plasmonic resonances in the biological transparency window where high absorption efficiencies can be obtained with small dimensions. Both lithographic and colloidal samples are examined from the perspective of nanoparticle thermal therapy. © 2014 OSA....

  2. The Molecular Pathway of Argon-Mediated Neuroprotection

    Directory of Open Access Journals (Sweden)

    Felix Ulbrich


    Full Text Available The noble gas argon has attracted increasing attention in recent years, especially because of its neuroprotective properties. In a variety of models, ranging from oxygen-glucose deprivation in cell culture to complex models of mid-cerebral artery occlusion, subarachnoid hemorrhage or retinal ischemia-reperfusion injury in animals, argon administration after individual injury demonstrated favorable effects, particularly increased cell survival and even improved neuronal function. As an inert molecule, argon did not show signs of adverse effects in the in vitro and in vivo model used, while being comparably cheap and easy to apply. However, the molecular mechanism by which argon is able to exert its protective and beneficial characteristics remains unclear. Although there are many pieces missing to complete the signaling pathway throughout the cell, it is the aim of this review to summarize the known parts of the molecular pathways and to combine them to provide a clear insight into the cellular pathway, starting with the receptors that may be involved in mediating argons effects and ending with the translational response.

  3. The Spectroscopic Detectability of Argon in the Lunar Atmosphere

    CERN Document Server

    Parker, J W; Gladstone, G R; Shull, J M; Parker, Joel Wm.


    Direct measurements of the abundance of argon in the lunar atmosphere were made in 1973 by instruments placed on the Moon during the Apollo 17 mission, but the total daytime abundance is unknown due to instrument saturation effects; thus, until we are able to return to the Moon for improved direct measurements, we must use remote sensing to establish the daytime abundance. In this paper, we present a complete analysis of the potential for measuring argon in the lunar atmosphere via emission-line or absorption-line observations. We come to the surprising conclusion that the lower limit established by the in situ lunar argon measurements implies that any absorption-line measurement of argon in the lower, dayside lunar atmosphere requires analysis in the optically-thick regime. In light of this result, we present the results of our EUVS sounding rocket observations of the lunar occultation of Spica, which provide a new upper limit on the abundance of argon in the daytime lunar atmosphere. We also re-analyze a re...

  4. Irradiation damage simulation of Zircaloy-4 using argon ions bombardment

    Institute of Scientific and Technical Information of China (English)

    Dequan Peng; Xinde Bai; Feng Pan


    To simulate irradiation damage, argon ion was implanted in the Zircaloy-4 with the fluence ranging from 1×1016 to 1×1017 cm-2, using accelerating implanter at an extraction voltage of 190 kV and liquid nitrogen temperature. Then the influence of argon ion implantation on the aqueous corrosion behavior of Zircaloy-4 was studied. The valence states of elements in the surface layer of the samples wcrc analyzed using X-ray photoelectron spectroscopy (XPS). Transmission clcctron microscopy (TEM) was used to examine the microstructure of the argon-implanted samples. The potentiodynamic polarization technique was employed to evaluate the aqueous corrosion resistance of implanted Zircaloy-4 in 1 mol/L H2SO4 solution. It is found that there appear bubbles on the surface of the samples when the argon flucncc is 1×1016 cm-2. The microstructure of argon-implanted samples changes from amor-phous to partial amorphous, then to polycrystallinc, and again to amorphous. The corrosion resistance of implanted samples linearly declines with the increase of flucnce approximately, which is attributed to the linear increase of the irradiation damage.

  5. Characteristics of Knock in Hydrogen-Oxygen-Argon SI Engine

    Energy Technology Data Exchange (ETDEWEB)

    Killingsworth, N; Rapp, V; Flowers, D; Aceves, S; Chen, J; Dibble, R


    A promising approach for improving the efficiency of internal combustion engines is to employ a working fluid with a high specific heat ratio such as the noble gas argon. Moreover, all harmful emissions are eliminated when the intake charge is composed of oxygen, nonreactive argon, and hydrogen fuel. Previous research demonstrated indicated thermal efficiencies greater than 45% at 5.5 compression ratio in engines operating with hydrogen, oxygen, and argon. However, knock limits spark advance and increasing the efficiency further. Conditions under which knock occurs in such engines differs from typical gasoline fueled engines. In-cylinder temperatures using hydrogen-oxygen-argon are higher due to the high specific heat ratio and pressures are lower because of the low compression ratio. Better understanding of knock under these conditions can lead to operating strategies that inhibit knock and allow operation closer to the knock limit. In this work we compare knock with a hydrogen, oxygen, and argon mixture to that of air-gasoline mixtures in a variable compression ratio cooperative fuels research (CFR) engine. The focus is on stability of knocking phenomena, as well as, amplitude and frequency of the resulting pressure waves.

  6. Reticulated porous silicon nitride-based ceramics


    Mazzocchi, Mauro; Medri, Valentina; Guicciardi, Stefano


    The interest towards the production of porous silicon nitride originates from the unique combination of light weight, of mechanical and physical properties typical of this class of ceramics that make them attractive for many engineering applications. Although pores are generally believed to deteriorate the mechanical properties of ceramics (the strength of porous ceramics decreases exponentially with an increase of porosity), the recent literature reports that porous silicon nitride can exhib...

  7. The Nitrogen-Nitride Anode.

    Energy Technology Data Exchange (ETDEWEB)

    Delnick, Frank M.


    Nitrogen gas N 2 can be reduced to nitride N -3 in molten LiCl-KCl eutectic salt electrolyte. However, the direct oxidation of N -3 back to N 2 is kinetically slow and only occurs at high overvoltage. The overvoltage for N -3 oxidation can be eliminated by coordinating the N -3 with BN to form the dinitridoborate (BN 2 -3 ) anion which forms a 1-D conjugated linear inorganic polymer with -Li-N-B-N- repeating units. This polymer precipitates out of solution as Li 3 BN 2 which becomes a metallic conductor upon delithiation. Li 3 BN 2 is oxidized to Li + + N 2 + BN at about the N 2 /N -3 redox potential with very little overvoltage. In this report we evaluate the N 2 /N -3 redox couple as a battery anode for energy storage.

  8. Modelling of the layer evolution during nitriding processes

    Energy Technology Data Exchange (ETDEWEB)

    Figueroa, U.; Oseguera, J.; Schabes, P. [CEM, Atizapan (Mexico)


    The evolution of concomitant layers of nitrides is presented. The layer formation is experimentally achieved through two processes: Nitriding with a weakly ionized plasma and nitrogen post-discharge nitriding. The nitriding processes were performed on samples of pure iron and carbon steel. Nitriding temperatures were close but different from the eutectoid transformation point temperature. The experimental layer growth pattern is compared with a model of mass transfer, in which interface mass balance is considered. In the model the authors have considered the formation of one and two compact nitride layers. For short time of treatment, it is shown that a parabolic profile does not satisfactorily describe the layer growth.

  9. Electrochemical Solution Growth of Magnetic Nitrides

    Energy Technology Data Exchange (ETDEWEB)

    Monson, Todd C. [Sandia National Lab. (SNL-NM), Albuquerque, NM (United States); Pearce, Charles [Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)


    Magnetic nitrides, if manufactured in bulk form, would provide designers of transformers and inductors with a new class of better performing and affordable soft magnetic materials. According to experimental results from thin films and/or theoretical calculations, magnetic nitrides would have magnetic moments well in excess of current state of the art soft magnets. Furthermore, magnetic nitrides would have higher resistivities than current transformer core materials and therefore not require the use of laminates of inactive material to limit eddy current losses. However, almost all of the magnetic nitrides have been elusive except in difficult to reproduce thin films or as inclusions in another material. Now, through its ability to reduce atmospheric nitrogen, the electrochemical solution growth (ESG) technique can bring highly sought after (and previously inaccessible) new magnetic nitrides into existence in bulk form. This method utilizes a molten salt as a solvent to solubilize metal cations and nitrogen ions produced electrochemically and form nitrogen compounds. Unlike other growth methods, the scalable ESG process can sustain high growth rates (~mm/hr) even under reasonable operating conditions (atmospheric pressure and 500 °C). Ultimately, this translates into a high throughput, low cost, manufacturing process. The ESG process has already been used successfully to grow high quality GaN. Below, the experimental results of an exploratory express LDRD project to access the viability of the ESG technique to grow magnetic nitrides will be presented.

  10. Multi-objective optimization of steel nitriding

    Directory of Open Access Journals (Sweden)

    P. Cavaliere


    Full Text Available Steel nitriding is a thermo-chemical process largely employed in the machine components production to solve mainly wear and fatigue damage in materials. The process is strongly influenced by many different variables such as steel composition, nitrogen potential (range 0.8–35, temperature (range 350–1200 °C, time (range 2–180 hours. In the present study, the influence of such parameters affecting the nitriding layers' thickness, hardness, composition and residual stress was evaluated. The aim was to streamline the process by numerical–experimental analysis allowing to define the optimal conditions for the success of the process. The optimization software that was used is modeFRONTIER (Esteco, through which was defined a set of input parameters (steel composition, nitrogen potential, nitriding time, etc. evaluated on the basis of an optimization algorithm carefully chosen for the multi-objective analysis. The mechanical and microstructural results belonging to the nitriding process, performed with different processing conditions for various steels, are presented. The data were employed to obtain the analytical equations describing nitriding behavior as a function of nitriding parameters and steel composition. The obtained model was validated through control designs and optimized by taking into account physical and processing conditions.

  11. Research on the piezoelectric response of cubic and hexagonal boron nitride films

    Institute of Scientific and Technical Information of China (English)

    CHEN Xi-ming; SUN Lian-jie; YANG Bao-he; GUO Yan; WU Xiao-guo


    Boron nitride (BN) films for high-frequency surface acoustic wave (SAW) devices are deposited on Ti/A(l)/Si(111) wafers byradio frequency (RF) magnetron sputtering.The structure of BN films is investigated by Fourier transform infrared (FTIR)spectroscopy and X-ray diffraction (XRD) spectra,and the surface morphology and piezoelectric properties of BN films are characterized by atomic force microscopy (AFM).The results show that when the flow ratio of nitrogen and argon is 2∶18,the cubic BN (c-BN) film is deposited with high purity and c-axis orientation,and when the flow ratio of nitrogen and argon is 4∶20,the hexagonal BN (h-BN) film is deposited with high c-axis orientation.Both particles are uniform and compact,and the roughnesses are 1.5 nm and 2.29 nm,respectively.The h-BN films have better piezoelectric response and distribution than the c-BN films.

  12. Catalytic growth of vertically aligned neutron sensitive {sup 10}Boron nitride nanotubes

    Energy Technology Data Exchange (ETDEWEB)

    Ahmad, Pervaiz, E-mail:, E-mail:; Khandaker, Mayeen Uddin, E-mail:, E-mail:; Amin, Yusoff Mohd [University of Malaya, Department of Physics, Faculty of Science (Malaysia); Khan, Ghulamullah [University of Malaya, Department of Mechanical Engineering (Malaysia); Ramay, Shahid M. [King Saud University, Department of Physics and Astronomy, College of Science (Saudi Arabia); Mahmood, Asif [King Saud University, Department of Chemical Engineering, College of Engineering (Saudi Arabia); Amin, Muhammad [University of the Punjab, Department of Physics (Pakistan); Muhammad, Nawshad [Interdisciplinary Research Centre in Biomedical Materials (IRCBM) COMSATS Institute of Information Technology (Pakistan)


    {sup 10}Boron nitride nanotubes ({sup 10}BNNTs) are a potential neutron sensing element in a solid-state neutron detector. The aligned {sup 10}BNNT can be used for its potential application without any further purification. Argon-supported thermal CVD is used to achieve vertically aligned {sup 10}BNNT with the help of nucleation sites produced in a thin layer of magnesium–iron alloy deposited at the top of Si substrate. FESEM shows vertically aligned {sup 10}BNNTs with ball-like catalytic tips at top. EDX reveals magnesium (Mg) contents in the tips that refer to catalytic growth of {sup 10}BNNT. HR-TEM shows tubular morphology of the synthesized {sup 10}BNNT with lattice fringes on its outer part having an interlayer spacing of ∼0.34 nm. XPS shows B 1 s and N 1 s peaks at 190.5 and 398 eV that correspond to hexagonal {sup 10}Boron nitride ({sup 10}h-BN) nature of the synthesized {sup 10}BNNT, whereas the Mg kll auger peaks at ∼301 and ∼311 eV represents Mg contents in the sample. Raman spectrum has a peak at 1390 (cm{sup −1}) that corresponds to E{sub 2g} mode of vibration in {sup 10}h-BN.

  13. Thermal Plasma Synthesis of Crystalline Gallium Nitride Nanopowder from Gallium Nitrate Hydrate and Melamine

    Directory of Open Access Journals (Sweden)

    Tae-Hee Kim


    Full Text Available Gallium nitride (GaN nanopowder used as a blue fluorescent material was synthesized by using a direct current (DC non-transferred arc plasma. Gallium nitrate hydrate (Ga(NO33∙xH2O was used as a raw material and NH3 gas was used as a nitridation source. Additionally, melamine (C3H6N6 powder was injected into the plasma flame to prevent the oxidation of gallium to gallium oxide (Ga2O3. Argon thermal plasma was applied to synthesize GaN nanopowder. The synthesized GaN nanopowder by thermal plasma has low crystallinity and purity. It was improved to relatively high crystallinity and purity by annealing. The crystallinity is enhanced by the thermal treatment and the purity was increased by the elimination of residual C3H6N6. The combined process of thermal plasma and annealing was appropriate for synthesizing crystalline GaN nanopowder. The annealing process after the plasma synthesis of GaN nanopowder eliminated residual contamination and enhanced the crystallinity of GaN nanopowder. As a result, crystalline GaN nanopowder which has an average particle size of 30 nm was synthesized by the combination of thermal plasma treatment and annealing.

  14. Adhesion analysis for chromium nitride thin films deposited by reactive magnetron sputtering (United States)

    Rusu, F. M.; Merie, V. V.; Pintea, I. M.; Molea, A.


    The thin film industry is continuously growing due to the wide range of applications that require the fabrication of advanced components such as sensors, biological implants, micro-electromechanical devices, optical coatings and so on. The selection regarding the deposition materials, as well as the deposition technology influences the properties of the material and determines the suitability of devices for certain real-world applications. This paper is focused on the adhesion force for several chromium nitride thin films obtained by reactive magnetron sputtering. All chromium nitride thin films were deposited on a silicon substrate, the discharge current and the argon flow being kept constant. The main purpose of the paper is to determine the influence of deposition parameters on the adhesion force. Therefore some of the deposition parameters were varied in order to study their effect on the adhesion force. Experimentally, the values of the adhesion force were determined in multiple points for each sample using the spectroscopy in point mode of the atomic force microscope. The obtained values were used to estimate the surface energy of the CrN thin films based on two existing mathematical models for the adhesion force when considering the contact between two bodies.

  15. Junctions between a boron nitride nanotube and a boron nitride sheet. (United States)

    Baowan, Duangkamon; Cox, Barry J; Hill, James M


    For future nanoelectromechanical signalling devices, it is vital to understand how to connect various nanostructures. Since boron nitride nanostructures are believed to be good electronic materials, in this paper we elucidate the classification of defect geometries for combining boron nitride structures. Specifically, we determine possible joining structures between a boron nitride nanotube and a flat sheet of hexagonal boron nitride. Firstly, we determine the appropriate defect configurations on which the tube can be connected, given that the energetically favourable rings for boron nitride structures are rings with an even number of sides. A new formula E = 6+2J relating the number of edges E and the number of joining positions J is established for each defect, and the number of possible distinct defects is related to the so-called necklace and bracelet problems of combinatorial theory. Two least squares approaches, which involve variation in bond length and variation in bond angle, are employed to determine the perpendicular connection of both zigzag and armchair boron nitride nanotubes with a boron nitride sheet. Here, three boron nitride tubes, which are (3, 3), (6, 0) and (9, 0) tubes, are joined with the sheet, and Euler's theorem is used to verify geometrically that the connected structures are sound, and their relationship with the bonded potential energy function approach is discussed. For zigzag tubes (n,0), it is proved that such connections investigated here are possible only for n divisible by 3.

  16. Direct access to macroporous chromium nitride and chromium titanium nitride with inverse opal structure. (United States)

    Zhao, Weitian; DiSalvo, Francis J


    We report a facile synthesis of single-phase, nanocrystalline macroporous chromium nitride and chromium titanium nitride with an inverse opal morphology. The material is characterized using XRD, SEM, HR-TEM/STEM, TGA and XPS. Interconversion of macroporous CrN to Cr2O3 and back to CrN while retaining the inverse opal morphology is also demonstrated.

  17. The Simulation of the ATLAS Liquid Argon Calorimetry

    CERN Document Server

    Archambault, J P; Carli, T; Costanzo, D; Dell'Acqua, A; Djama, F; Gallas, M; Fincke-Keeler, M; Khakzad, M; Kiryunin, A; Krieger, P; Leltchouk, M; Loch, P; Ma, H; Menke, S; Monnier, E; Nairz, A; Niess, V; Oakham, G; Oram, C; Pospelov, G; Rajagopalan, S; Rimoldi, A; Rousseau, D; Rutherfoord, J; Seligman, W; Soukharev, A; Strízenec, P; Tóth, J; Tsukerman, I; Tsulaia, V; Unal, G; Grahn, K J


    In ATLAS, all of the electromagnetic calorimetry and part of the hadronic calorimetry is performed by a calorimeter system using liquid argon as the active material, together with various types of absorbers. The liquid argon calorimeter consists of four subsystems: the electromagnetic barrel and endcap accordion calorimeters; the hadronic endcap calorimeters, and the forward calorimeters. A very accurate geometrical description of these calorimeters is used as input to the Geant 4-based ATLAS simulation, and a careful modelling of the signal development is applied in the generation of hits. Certain types of Monte Carlo truth information ("Calibration Hits") may, additionally, be recorded for calorimeter cells as well as for dead material. This note is a comprehensive reference describing the simulation of the four liquid argon calorimeteter components.

  18. Liquid Argon Calorimetry with LHC-Performance Specifications

    CERN Multimedia


    % RD-3 Liquid Argon Calorimetry with LHC-Performance Specifications \\\\ \\\\Good electromagnetic and hadronic calorimetry will play a central role in an LHC detector. Among the techniques used so far, or under development, the liquid argon sampling calorimetry offers high radiation resistence, good energy resolution (electromagnetic and hadronic), excellent calibration stability and response uniformity. Its rate capabilities, however, do not yet match the requirements for LHC. \\\\ \\\\The aim of this proposal is to improve the technique in such a way that high granularity, good hermiticity and adequate rate capabilities are obtained, without compromising the above mentioned properties. To reach this goal, we propose to use a novel structure, the $^{\\prime\\prime}$accordion$^{\\prime\\prime}$, coupled to fast preamplifiers working at liquid argon temperature. Converter and readout electrodes are no longer planar and perpendicular to particles, as usual, but instead they are wiggled around a plane containing particles. ...

  19. Scintillation time dependence and pulse shape discrimination in liquid argon

    CERN Document Server

    Lippincott, W H; Gastler, D; Hime, A; Kearns, E; McKinsey, D N; Nikkel, J A; Stonehill, L C


    Using a single-phase liquid argon detector with a signal yield of 4.85 photoelectrons per keV of electronic-equivalent recoil energy (keVee), we measure the scintillation time dependence of both electronic and nuclear recoils in liquid argon down to 5 keVee. We develop two methods of pulse shape discrimination to distinguish between electronic and nuclear recoils. Using one of these methods, we measure a background and statistics-limited level of electronic recoil contamination to be $7.6\\times10^{-7}$ between 60 and 128 keV of nuclear recoil energy (keVr) for a nuclear recoil acceptance of 50% with no nuclear recoil-like events above 72 keVr. Finally, we develop a maximum likelihood method of pulse shape discrimination using the measured scintillation time dependence and predict the sensitivity to WIMP-nucleon scattering in three configurations of a liquid argon dark matter detector.

  20. Attenuation measurements of vacuum ultraviolet light in liquid argon revisited

    Energy Technology Data Exchange (ETDEWEB)

    Neumeier, A. [Physik-Department E15, Technische Universität München, James-Franck-Straße 1, 85748 Garching (Germany); Dandl, T.; Himpsl, A. [Physik-Department E12, Technische Universität München, James-Franck-Straße 1, 85748 Garching (Germany); Hofmann, M. [Physik-Department E15, Technische Universität München, James-Franck-Straße 1, 85748 Garching (Germany); KETEK GmbH, Hofer Straße 3, 81737 München (Germany); Oberauer, L.; Potzel, W.; Schönert, S. [Physik-Department E15, Technische Universität München, James-Franck-Straße 1, 85748 Garching (Germany); Ulrich, A., E-mail: [Physik-Department E12, Technische Universität München, James-Franck-Straße 1, 85748 Garching (Germany)


    The attenuation of vacuum ultraviolet light in liquid argon in the context of its application in large liquid noble gas detectors has been studied. Compared to a previous publication several technical issues concerning transmission measurements in general are addressed and several systematic effects were quantitatively measured. Wavelength-resolved transmission measurements have been performed from the vacuum ultraviolet to the near-infrared region. On the current level of sensitivity with a length of the optical path of 11.6 cm, no xenon-related absorption effects could be observed, and pure liquid argon is fully transparent down to the short wavelength cut-off of the experimental setup at 118 nm. A lower limit for the attenuation length of pure liquid argon for its own scintillation light has been estimated to be 1.10 m based on a very conservative approach.

  1. Developing Detectors for Scintillation Light in Liquid Argon for DUNE

    Energy Technology Data Exchange (ETDEWEB)

    Howard, Bruce [Fermilab


    The Deep Underground Neutrino experiment will conduct a broad program of physics research by studying a beam of neutrinos from Fermilab, atmospheric neutrinos, neutrinos from potential supernovae, and potential nucleon decay events. In pursuit of these studies, the experiment will deploy four 10kt fiducial mass liquid argon time projection chambers underground in Lead, South Dakota. Liquid argon time projection chambers allow high-resolution tracking and energy measurements. A precise timing signal is needed to provide the necessary time stamp to localize events in the drift direction. As liquid argon is a natural scintillator, a photon detection system will be deployed to provide such a signal, especially for non-beam events. In the baseline design for the single-phase time projection chamber, the detectors are contained within the anode plane assemblies. The design of two prototypes utilizing wavelength shifters and light guides are presented, and aspects of the research and development program are discussed.

  2. Attenuation measurements of vacuum ultraviolet light in liquid argon revisited

    CERN Document Server

    Neumeier, A; Himpsl, A; Hofmann, M; Oberauer, L; Potzel, W; Schönert, S; Ulrich, A


    The attenuation of vacuum ultraviolet light in liquid argon in the context of its application in large liquid noble gas detectors has been studied. Compared to a previous publication several technical issues concerning transmission measurements in general are addressed and several systematic effects were quantitatively measured. Wavelength-resolved transmission measurements have been performed from the vacuum ultraviolet to the near-infrared region. On the current level of sensitivity with a length of the optical path of 11.6 cm, no xenon-related absorption effects could be observed, and pure liquid argon is fully transparent down to the short wavelength cut-off of the experimental setup at 118 nm. A lower limit for the attenuation length of pure liquid argon for its own scintillation light has been estimated to be 1.10 m based on a very conservative approach.

  3. Studies of Electron Avalanche Behavior in Liquid Argon

    CERN Document Server

    Kim, J G; Jackson, K H; Kadel, R W; Kadyk, J A; Peskov, Vladimir; Wenzel, W A


    Electron avalanching in liquid argon is being studied as a function of voltage, pressure, radiation intensity, and the concentrations of certain additives, especially xenon. The avalanches produced in an intense electric field at the tip of a tungsten needle are initiated by ionization from a moveable americium (241Am) gamma ray source. Photons from xenon excimers are detected as photomultiplier signals in coincidence with the current pulse from the needle. In pure liquid argon the avalanche behavior is erratic, but the addition of even a small amount of xenon (>100ppm) stabilizes the performance. Similar attempts with neon (30%) as an additive to argon have been unsuccessful. Tests with higher energy gamma rays (57Co) yield spectra and other performance characteristics quite similar to those using the 241Am source. Two types of signal pulses are commonly observed: a set of pulses that are sensitive to ambient pressure, and a set of somewhat smaller pulses that are not pressure dependent.

  4. A therapeutic experience on Port Wine hemangiomas with Argon Laser

    Directory of Open Access Journals (Sweden)

    Farahvash M


    Full Text Available Port wine stains are benign but cosmetically devasting congenital angiomas. The argon laser is a therapeutic device newly applied to this condition. Our program was begun 6 years ago. From the beginning, the study was conceived as a clinical investigation of both the port wine stain and its argon laser therapy. A total of 218 patients with port wine stains have been studied and many aspects of their clinical condition detailed. Employing the Argon laser, test spots have been carried out in patients and the results have been analyzed with clinical aspects of the lesions. Altogether, 501 treatments were performed in 218 patients. Good to excellent results were obtained in 81 patients. Moderate Result was obtained in 31 weak result in 65 patients. Most common complication were hyperpigmentation and depressed scar.

  5. The Erosion of Frozen Argon by Swift Helium Ions

    DEFF Research Database (Denmark)

    Besenbacher, F.; Bøttiger, Jørgen; Graversen, O.


    The temperature, energy, and thickness dependence of the erosion rates of frozen argon films when irradiated with 0.1–3 MeV helium ions have been measured. The erosion yields Y are much too high to be explained by the concentional collisional cascade-sputtering theory and are furthermore unequivo......The temperature, energy, and thickness dependence of the erosion rates of frozen argon films when irradiated with 0.1–3 MeV helium ions have been measured. The erosion yields Y are much too high to be explained by the concentional collisional cascade-sputtering theory and are furthermore...

  6. Rotational spectrum and dynamics of tetrahydrofuran-argon

    Energy Technology Data Exchange (ETDEWEB)

    Melandri, S.; Favero, P.G.; Caminati, W. [Dipartimento di Chimica ' G. Ciamician' dell' Universita, Via Selmi 2, I-40126 Bologna (Italy); Lopez, J.C.; Alonso, J.L. [Departamento de Quimica-Fisica, Facultad de Ciencias, Universidad de Valladolid, E-47005 Valladolid (Spain)


    The jet-cooled rotational spectrum of the tetrahydrofuran-argon molecular complex has been investigated by millimeter-wave absorption and Fourier transform microwave spectroscopies. The argon atom is located nearly over the oxygen atom, almost perpendicularly to the COC plane. Each rotational transition is split in two component lines due to the residual pseudorotational effects of the ring in the complex. The splitting between the two vibrational sublevels has been calculated to be 111.345(44) MHz. (Copyright (c) 1998 Elsevier Science B.V., Amsterdam. All rights reserved000.

  7. Attosecond-correlated dynamics of two electrons in argon

    Indian Academy of Sciences (India)

    V Sharma; N Camus; B Fischer; M Kremer; A Rudenko; B Bergues; M Kuebel; N G Johnson; M F Kling; T Pfeifer; J Ullrich; R Moshammer


    In this work we explored strong field-induced decay of doubly excited transient Coulomb complex Ar** → Ar2++2. We measured the correlated two-electron emission as a function of carrier envelop phase (CEP) of 6 fs pulses in the non-sequential double ionization (NSDI) of argon. Classical model calculations suggest that the intermediate doubly excited Coulomb complex loses memory of its formation dynamics. We estimated the ionization time difference between the two electrons from NSDI of argon and it is 200 ± 100 as (N Camus et al, Phys. Rev. Lett. 108, 073003 (2012)).

  8. Measurement of Longitudinal Electron Diffusion in Liquid Argon

    CERN Document Server

    Li, Yichen; Thorn, Craig; Qian, Xin; Diwan, Milind; Joshi, Jyoti; Kettell, Steve; Morse, William; Rao, Triveni; Stewart, Jim; Tang, Wei; Viren, Brett


    We report the measurement of longitudinal electron diffusion coefficients in liquid argon for electric fields between 100 and 2000 V/cm with a gold photocathode as a bright electron source. The measurement principle, apparatus, and data analysis are described. Our results, which are consistent with previous measurements in the region between 100 to 350 V/cm [1] , are systematically higher than the prediction of Atrazhev-Timoshkin[2], and represent the world's best measurement in the region between 350 to 2000 V/cm. The quantum efficiency of the gold photocathode, the drift velocity and longitudinal diffusion coefficients in gas argon are also presented.

  9. Filamentation of ultrashort laser pulses of different wavelengths in argon

    Indian Academy of Sciences (India)



    We investigate the filaments formed by the ultrashort laser pulses with different wavelengths of 400 nm, 586 nm and 800 nm propagating in argon. Numerical results show that, when the input power or the ratio of the input power to the critical power is given, the pulse with 400 nm wavelength has the largest on-axis intensity, as well as the narrowest filament and the most stable beam radius. These results indicate that the pulse with shorter wavelength is more suitable for the long-range propagation in argon.

  10. Method of manufacture of atomically thin boron nitride (United States)

    Zettl, Alexander K


    The present invention provides a method of fabricating at least one single layer hexagonal boron nitride (h-BN). In an exemplary embodiment, the method includes (1) suspending at least one multilayer boron nitride across a gap of a support structure and (2) performing a reactive ion etch upon the multilayer boron nitride to produce the single layer hexagonal boron nitride suspended across the gap of the support structure. The present invention also provides a method of fabricating single layer hexagonal boron nitride. In an exemplary embodiment, the method includes (1) providing multilayer boron nitride suspended across a gap of a support structure and (2) performing a reactive ion etch upon the multilayer boron nitride to produce the single layer hexagonal boron nitride suspended across the gap of the support structure.

  11. Colloidal Plasmonic Titanium Nitride Nanoparticles: Properties and Applications

    DEFF Research Database (Denmark)

    Guler, Urcan; Suslov, Sergey; Kildishev, Alexander V.;


    Optical properties of colloidal plasmonic titanium nitride nanoparticles are examined with an eye on their photothermal and photocatalytic applications via transmission electron microscopy and optical transmittance measurements. Single crystal titanium nitride cubic nanoparticles with an average...

  12. Diffusion kinetics of nitrogen in tantalum during plasma-nitriding

    Institute of Scientific and Technical Information of China (English)

    张德元; 林勤; 曾卫军; 李放; 许兰萍; 付青峰


    The activation energies of nitrogen in tantalum on plasma nitriding conditions were calculated according to the experimental data of hardness of plasma-nitriding of tantalum vs time and temperature. The activation energy calculated is 148.873±0.390  kJ/mol. The depth increasing of nitriding layer with time follows square root relation. The nitriding process of tantalum is controlled by diffusion of nitrogen atoms in tantalum solid solution.

  13. Thermal decomposition of Yttrium(III) isovalerate in argon

    DEFF Research Database (Denmark)

    Grivel, Jean-Claude; Yue, Zhao; Tang, Xiao;


    The thermal behaviour of yttrium(III) isovalerate (Y(C4H9CO2)3) was studied in argon by means of thermogravimetry, differential thermal analysis, FTIR-spectroscopy, hot-stage optical microscopy and X-ray diffraction with a laboratory Cu-tube source as well as with a synchrotron radiation source...

  14. Thermal decomposition of yttrium(III) valerate in argon

    DEFF Research Database (Denmark)

    Grivel, Jean-Claude; Yue, Zhao; Tang, Xiao;


    The thermal decomposition of yttrium(III) valerate (Y(C4H9CO2)3) was studied in argon by means of thermogravimetry, differential thermal analysis, IR-spectroscopy, X-ray diffraction, in-situ synchrotron diffraction and hot-stage microscopy as well as room temperature optical microscopy. Melting...

  15. Laser-induced vibrational dynamics of ozone in solid argon

    DEFF Research Database (Denmark)

    Hansen, Flemming Yssing; Amstrup, B.; Henriksen, Niels Engholm


    We consider the vibrational dynamics, induced by an intense infrared laser pulse, in an ozone molecule with isotopic substitution, that is, (OOO)-O-16-O-16-O-18 and compare the dynamics in the gas phase and in solid ar on. not perturbed by argon on a time-scale of a few picoseconds and selective...

  16. A 2-Dimensional Fluid Model for an Argon Rf Discharge

    NARCIS (Netherlands)

    Passchier, J. D. P.; W. J. Goedheer,


    A fluid model for an argon rf discharge in a cylindrical discharge chamber is presented. The model contains the particle balances for electrons and ions and the electron energy balance. A nonzero autobias voltage is obtained by imposing the condition that the time-averaged current toward the powered

  17. Study of Liquid Argon Dopants for LHC Hadron Calorimetry

    CERN Multimedia


    Hadron calorimetry based on the Liquid Argon Ionisation Chamber technique is one of the choice techniques for LHC-experimentation. A systematic study of the effect of selected dopants on Liquid Argon (LAr) will be carried out with the aim to achieve an improvement on: \\item (i)~``Fast Liquid Argon'' search and study of dopants to increase the drift velocity. It has been already shown that CH&sub4. added at a fraction of one percent increases the drift velocity by a factor of two or more. \\item (ii)~``Compensated Liquid Argon'' search and study of dopants to increase the response to densely ionising particles, resulting in improved compensation, such as photosensitive dopants. \\end{enumerate}\\\\ \\\\ Monitoring of the parameters involved in understanding the response of a calorimeter is essential. In case of doped LAr, the charge yield, the non-saturated drift velocity and the electron lifetime in the liquid should be precisely and simultaneously monitored as they all vary with the level of dopant concentrati...

  18. Human-chromosome alterations induced by argon laser treatment

    Energy Technology Data Exchange (ETDEWEB)

    Simi, S.; Colella, C. (Consiglio Nazionale delle Ricerche, Pisa (Italy). Lab. di Mutagenesi e Differenziamento); Agati, G.; Fusi, F. (Florence Univ. (Italy). Ist. di Farmacologia); Corsi, M.F.; Pratesi, R. (Consiglio Nazionale delle Ricerche, Florence (Italy). Lab. di Elettronica Quantistica); Tocco, G.A. (Naples Univ. (Italy). Ist. di Istologia ed Embrilogia)


    The possible occurrence of genetic damage arising from exposure of human cells to visible laser light has been evaluated in PHA-stimulated human lymphocytes. Aneuploidy and chromosome aberrations have been observed after exposure to an argon laser. These findings appear of special interest in view of the possible role of these chromosome alterations in carcinogenesis.

  19. LArGe. A liquid argon scintillation veto for GERDA

    Energy Technology Data Exchange (ETDEWEB)

    Heisel, Mark


    LArGe is a GERDA low-background test facility to study novel background suppression methods in a low-background environment, for possible applications in the GERDA experiment. GERDA searches for the neutrinoless double-beta decay in {sup 76}Ge, by operating naked germanium detectors submersed into 65 m{sup 3} of liquid argon. Similarly, LArGe runs Ge-detectors in 1 m{sup 3} (1.4 tons) of liquid argon, which in addition is instrumented with photomultipliers to detect argon scintillation light. The light is used in anti-coincidence with the germanium detectors, to effectively suppress background events that deposit energy in the liquid argon. This work adresses the design, construction, and commissioning of LArGe. The background suppression efficiency has been studied in combination with a pulse shape discrimination (PSD) technique for various sources, which represent characteristic backgrounds to GERDA. Suppression factors of a few times 10{sup 3} have been achieved. First background data of LArGe (without PSD) yield a background index of (0.12-4.6).10{sup -2} cts/( (90% c.l.), which is at the level of the Gerda phase I design goal. Furthermore, for the first time we measure the natural {sup 42}Ar abundance (in parallel to Gerda), and have indication for the 2{nu}{beta}{beta}-decay in natural germanium. (orig.)

  20. Behavior of Excited Argon Atoms in Inductively Driven Plasmas

    CERN Document Server

    Hebner, G A


    Laser induced fluorescence has been used to measure the spatial distribution of the two lowest energy argon excited states, 1s sub 5 and 1s sub 4 , in inductively driven plasmas containing argon, chlorine and boron trichloride. The behavior of the two energy levels with plasma conditions was significantly different, probably because the 1s sub 5 level is metastable and the 1s sub 4 level is radiatively coupled to the ground state but is radiation trapped. The argon data is compared with a global model to identify the relative importance of processes such as electron collisional mixing and radiation trapping. The trends in the data suggest that both processes play a major role in determining the excited state density. At lower rfpower and pressure, excited state spatial distributions in pure argon were peaked in the center of the discharge, with an approximately Gaussian profile. However, for the highest rfpowers and pressures investigated, the spatial distributions tended to flatten in the center of the disch...

  1. Pressure broadening of acetylene rotational Raman lines by argon


    Ceruti, M; Frenkel, D.; Mctaque, J.P.


    The anisotropic interaction between acetylene and argon has been studied by observing the density dependence of the acetylene pure rotational Raman line broadening. The observed cross sections are approximately twice that predicted from the known polarizabilities and acetylene molecular quadrupole moment. An empirical atom-atom anisotropic potential adequately parametrizes the results.

  2. Pressure broadening of acetylene rotational Raman lines by argon

    NARCIS (Netherlands)

    Ceruti, M.; Frenkel, D.; McTaque, J.P.


    The anisotropic interaction between acetylene and argon has been studied by observing the density dependence of the acetylene pure rotational Raman line broadening. The observed cross sections are approximately twice that predicted from the known polarizabilities and acetylene molecular quadrupole m

  3. Innovative boron nitride-doped propellants

    Institute of Scientific and Technical Information of China (English)

    Thelma MANNING; Henry GRAU; Paul MATTER; Michael BEACHY; Christopher HOLT; Samuel SOPOK; Richard FIELD; Kenneth KLINGAMAN; Michael FAIR; John BOLOGNINI; Robin CROWNOVER; Carlton P. ADAM; Viral PANCHAL; Eugene ROZUMOV


    The U.S. military has a need for more powerful propellants with balanced/stoichiometric amounts of fuel and oxidants. However, balanced and more powerful propellants lead to accelerated gun barrel erosion and markedly shortened useful barrel life. Boron nitride (BN) is an interesting potential additive for propellants that could reduce gun wear effects in advanced propellants (US patent pending 2015-026P). Hexagonal boron nitride is a good lubricant that can provide wear resistance and lower flame temperatures for gun barrels. Further, boron can dope steel, which drastically improves its strength and wear resistance, and can block the formation of softer carbides. A scalable synthesis method for producing boron nitride nano-particles that can be readily dispersed into propellants has been developed. Even dispersion of the nano-particles in a double-base propellant has been demonstrated using a solvent-based processing approach. Stability of a composite propellant with the BN additive was verified. In this paper, results from propellant testing of boron nitride nano-composite propellants are presented, including closed bomb and wear and erosion testing. Detailed characterization of the erosion tester substrates before and after firing was obtained by electron microscopy, inductively coupled plasma and x-ray photoelectron spectroscopy. This promising boron nitride additive shows the ability to improve gun wear and erosion resistance without any destabilizing effects to the propellant. Potential applications could include less erosive propellants in propellant ammunition for large, medium and small diameter fire arms.

  4. Nitridation of chromium powder in ammonia atmosphere

    Institute of Scientific and Technical Information of China (English)

    Ling Li; Qiang Zhen; Rong Li


    CrN powder was synthesized by nitriding Cr metal in ammonia gas flow, and its chemical reaction mechanism and nitridation process were studied. Through thermodynamic calculations, the Cr−N−O predominance diagrams were constructed for different tempera-tures. Chromium nitride formed at 700−1200°C under relatively higher nitrogen and lower oxygen partial pressures. Phases in the products were then investigated using X-ray diffraction (XRD), and the Cr2N content varied with reaction temperature and holding time. The results indicate that the Cr metal powder nitridation process can be explained by a diffusion model. Further, Cr2N formed as an intermediate product because of an incomplete reaction, which was observed by high-resolution transmission electron microscopy (HRTEM). After nitriding at 1000°C for 20 h, CrN powder with an average grain size of 63 nm was obtained, and the obtained sample was analyzed by using a scanning electron microscope (SEM).

  5. Innovative boron nitride-doped propellants

    Directory of Open Access Journals (Sweden)

    Thelma Manning


    Full Text Available The U.S. military has a need for more powerful propellants with balanced/stoichiometric amounts of fuel and oxidants. However, balanced and more powerful propellants lead to accelerated gun barrel erosion and markedly shortened useful barrel life. Boron nitride (BN is an interesting potential additive for propellants that could reduce gun wear effects in advanced propellants (US patent pending 2015-026P. Hexagonal boron nitride is a good lubricant that can provide wear resistance and lower flame temperatures for gun barrels. Further, boron can dope steel, which drastically improves its strength and wear resistance, and can block the formation of softer carbides. A scalable synthesis method for producing boron nitride nano-particles that can be readily dispersed into propellants has been developed. Even dispersion of the nano-particles in a double-base propellant has been demonstrated using a solvent-based processing approach. Stability of a composite propellant with the BN additive was verified. In this paper, results from propellant testing of boron nitride nano-composite propellants are presented, including closed bomb and wear and erosion testing. Detailed characterization of the erosion tester substrates before and after firing was obtained by electron microscopy, inductively coupled plasma and x-ray photoelectron spectroscopy. This promising boron nitride additive shows the ability to improve gun wear and erosion resistance without any destabilizing effects to the propellant. Potential applications could include less erosive propellants in propellant ammunition for large, medium and small diameter fire arms.

  6. Single gallium nitride nanowire lasers. (United States)

    Johnson, Justin C; Choi, Heon-Jin; Knutsen, Kelly P; Schaller, Richard D; Yang, Peidong; Saykally, Richard J


    There is much current interest in the optical properties of semiconductor nanowires, because the cylindrical geometry and strong two-dimensional confinement of electrons, holes and photons make them particularly attractive as potential building blocks for nanoscale electronics and optoelectronic devices, including lasersand nonlinear optical frequency converters. Gallium nitride (GaN) is a wide-bandgap semiconductor of much practical interest, because it is widely used in electrically pumped ultraviolet-blue light-emitting diodes, lasers and photodetectors. Recent progress in microfabrication techniques has allowed stimulated emission to be observed from a variety of GaN microstructures and films. Here we report the observation of ultraviolet-blue laser action in single monocrystalline GaN nanowires, using both near-field and far-field optical microscopy to characterize the waveguide mode structure and spectral properties of the radiation at room temperature. The optical microscope images reveal radiation patterns that correlate with axial Fabry-Perot modes (Q approximately 10(3)) observed in the laser spectrum, which result from the cylindrical cavity geometry of the monocrystalline nanowires. A redshift that is strongly dependent on pump power (45 meV microJ x cm(-2)) supports the idea that the electron-hole plasma mechanism is primarily responsible for the gain at room temperature. This study is a considerable advance towards the realization of electron-injected, nanowire-based ultraviolet-blue coherent light sources.

  7. Attachment cooling of electrons in oxygen-argon and SF6-argon mixtures (United States)

    Babaeva, Natalia; Kim, Sung Jin; Park, Gan Young; Lee, Jae Koo


    In e-beam sustained plasma different electron temperature can be obtained. Thus, in plasma of capacitive RF discharges in inert gases typical electron temperature is of the order of 2-3 eV. At certain conditions, in plasma of electronegative gases electron temperature can approach ion/neutral temperature. We consider e-beam sustained plasma of electronegative gases and their mixtures with argon where the main mechanism of plasma neutralization is connected with electron-molecule attachment. In such plasma, due to retardation of fast electrons of e-beam secondary electrons are created which loose their energy due to attachment. It is shown, that at certain conditions (in dependence of the e-beam intensity and spectrum of secondary electrons) electron temperature can obtain the values comparable or even less than temperature of neutral component. The effect can be explained by the increase of attachment rate coefficient with the increase of electron temperature (mean electron energy). Such a dependence leads to attachment of the fastest plasma electrons and selective loss of electrons whose energy exceeds the mean electron energy and, as a result, to effective electron cooling. The theoretical and numerical analysis of the problem has been conducted. The numerical results obtained using ELENDIF code are compared with Particle-in-cell/Monte Carlo simulations under similar conditions.

  8. Conversion of an atomic to a molecular argon ion and low pressure argon relaxation (United States)

    M, N. Stankov; A, P. Jovanović; V, Lj Marković; S, N. Stamenković


    The dominant process in relaxation of DC glow discharge between two plane parallel electrodes in argon at pressure 200 Pa is analyzed by measuring the breakdown time delay and by analytical and numerical models. By using the approximate analytical model it is found that the relaxation in a range from 20 to 60 ms in afterglow is dominated by ions, produced by atomic-to-molecular conversion of Ar+ ions in the first several milliseconds after the cessation of the discharge. This conversion is confirmed by the presence of double-Gaussian distribution for the formative time delay, as well as conversion maxima in a set of memory curves measured in different conditions. Finally, the numerical one-dimensional (1D) model for determining the number densities of dominant particles in stationary DC glow discharge and two-dimensional (2D) model for the relaxation are used to confirm the previous assumptions and to determine the corresponding collision and transport coefficients of dominant species and processes. Project supported by the Ministry of Education, Science and Technological Development of the Republic of Serbia (Grant No. ON171025).

  9. 21 CFR 874.4490 - Argon laser for otology, rhinology, and laryngology. (United States)


    ... 21 Food and Drugs 8 2010-04-01 2010-04-01 false Argon laser for otology, rhinology, and laryngology. 874.4490 Section 874.4490 Food and Drugs FOOD AND DRUG ADMINISTRATION, DEPARTMENT OF HEALTH AND... Argon laser for otology, rhinology, and laryngology. (a) Identification. The argon laser device for...

  10. Fracture resistance of surface-nitrided zirconia

    Energy Technology Data Exchange (ETDEWEB)

    Feder, A.; Casellas, D.; Llanes, L.; Anglada, M. [Universidad Politecnica de Cataluna, Barcelona (Spain). Dept. of Material Science and Metallurgy


    Heat treatments have been conducted at 1650 C for 2 hours in Y-TZP stabilised with 2.5% molar of yttria in two different environments: in air and in nitrogen gas with the specimens embedded in a zirconium nitride powder bed. Relevant microstructural changes were induced by these heat treatments. It is highlighted the formation of a nitrided surface layer of about 400 {mu}m in thickness. Such layer has clear microstructural differences with respect to the bulk, and is formed by different sublayers with cubic and tetragonal phases with distinct degrees of transformability, as revealed by XRD and Raman spectroscopy. The fracture toughness and the hardness of the nitrided surface layer are higher than for the original Y-TZP. (orig.)

  11. Nitride Fuel Development at the INL

    Energy Technology Data Exchange (ETDEWEB)

    W.E. Windes


    A new method for fabricating nitride-based fuels for nuclear applications is under development at the Idaho National Laboratory (INL). A primary objective of this research is the development of a process that could be operated as an automated or semi-automated technique reducing costs, worker doses, and eventually improving the final product form. To achieve these goals the fabrication process utilizes a new cryo-forming technique to produce microspheres formed from sub-micron oxide powder to improve material handling issues, yield rapid kinetics for conversion to nitrides, and reduced material impurity levels within the nitride compounds. The microspheres are converted to a nitride form within a high temperature particle fluidizing bed using a carbothermic process that utilizes a hydrocarbon – hydrogen - nitrogen gas mixture. A new monitor and control system using differential pressure changes in the fluidizing gas allows for real-time monitoring and control of the spouted bed reactor during conversion. This monitor and control system can provide real-time data that is used to control the gas flow rates, temperatures, and gas composition to optimize the fluidization of the particle bed. The small size (0.5 µm) of the oxide powders in the microspheres dramatically increases the kinetics of the conversion process yielding reduced process times and temperatures. Initial studies using surrogate ZrO2 powder have yielded conversion efficiencies of 90 -95 % nitride formation with only small levels of oxide and carbide contaminants present. Further studies are being conducted to determine optimal gas mixture ratios, process time, and temperature range for providing complete conversion to a nitride form.

  12. Precipitate-Accommodated Plasma Nitriding for Aluminum Alloys

    Institute of Scientific and Technical Information of China (English)

    Patama Visittipitukul; Tatsuhiko Aizawa; Hideyuki Kuwahara


    Reliable surface treatment has been explored to improve the strength and wear resistance of aluminum alloy parts in automotives. Long duration time as well as long pre-sputtering time are required for plasma nitriding of aluminum or its alloys only with the thickness of a few micrometers. New plasma inner nitriding is proposed to realize the fast-rate nitriding of aluminum alloys. Al-6Cu alloy is employed as a targeting material in order to demonstrate the effectiveness of this plasma nitriding. Mechanism of fast-rate nitriding process is discussed with consideration of the role of Al2Cu precipitates.

  13. Alkaline Capacitors Based on Nitride Nanoparticles (United States)

    Aldissi, Matt


    High-energy-density alkaline electrochemical capacitors based on electrodes made of transition-metal nitride nanoparticles are undergoing development. Transition- metal nitrides (in particular, Fe3N and TiN) offer a desirable combination of high electrical conductivity and electrochemical stability in aqueous alkaline electrolytes like KOH. The high energy densities of these capacitors are attributable mainly to their high capacitance densities, which, in turn, are attributable mainly to the large specific surface areas of the electrode nanoparticles. Capacitors of this type could be useful as energy-storage components in such diverse equipment as digital communication systems, implanted medical devices, computers, portable consumer electronic devices, and electric vehicles.

  14. Local heating with titanium nitride nanoparticles

    DEFF Research Database (Denmark)

    Guler, Urcan; Ndukaife, Justus C.; Naik, Gururaj V.;


    We investigate the feasibility of titanium nitride (TiN) nanoparticles as local heat sources in the near infrared region, focusing on biological window. Experiments and simulations provide promising results for TiN, which is known to be bio-compatible.......We investigate the feasibility of titanium nitride (TiN) nanoparticles as local heat sources in the near infrared region, focusing on biological window. Experiments and simulations provide promising results for TiN, which is known to be bio-compatible....

  15. Ultrahard nanotwinned cubic boron nitride. (United States)

    Tian, Yongjun; Xu, Bo; Yu, Dongli; Ma, Yanming; Wang, Yanbin; Jiang, Yingbing; Hu, Wentao; Tang, Chengchun; Gao, Yufei; Luo, Kun; Zhao, Zhisheng; Wang, Li-Min; Wen, Bin; He, Julong; Liu, Zhongyuan


    Cubic boron nitride (cBN) is a well known superhard material that has a wide range of industrial applications. Nanostructuring of cBN is an effective way to improve its hardness by virtue of the Hall-Petch effect--the tendency for hardness to increase with decreasing grain size. Polycrystalline cBN materials are often synthesized by using the martensitic transformation of a graphite-like BN precursor, in which high pressures and temperatures lead to puckering of the BN layers. Such approaches have led to synthetic polycrystalline cBN having grain sizes as small as ∼14 nm (refs 1, 2, 4, 5). Here we report the formation of cBN with a nanostructure dominated by fine twin domains of average thickness ∼3.8 nm. This nanotwinned cBN was synthesized from specially prepared BN precursor nanoparticles possessing onion-like nested structures with intrinsically puckered BN layers and numerous stacking faults. The resulting nanotwinned cBN bulk samples are optically transparent with a striking combination of physical properties: an extremely high Vickers hardness (exceeding 100 GPa, the optimal hardness of synthetic diamond), a high oxidization temperature (∼1,294 °C) and a large fracture toughness (>12 MPa m(1/2), well beyond the toughness of commercial cemented tungsten carbide, ∼10 MPa m(1/2)). We show that hardening of cBN is continuous with decreasing twin thickness down to the smallest sizes investigated, contrasting with the expected reverse Hall-Petch effect below a critical grain size or the twin thickness of ∼10-15 nm found in metals and alloys.

  16. Boron nitride nanotubes for spintronics. (United States)

    Dhungana, Kamal B; Pati, Ranjit


    With the end of Moore's law in sight, researchers are in search of an alternative approach to manipulate information. Spintronics or spin-based electronics, which uses the spin state of electrons to store, process and communicate information, offers exciting opportunities to sustain the current growth in the information industry. For example, the discovery of the giant magneto resistance (GMR) effect, which provides the foundation behind modern high density data storage devices, is an important success story of spintronics; GMR-based sensors have wide applications, ranging from automotive industry to biology. In recent years, with the tremendous progress in nanotechnology, spintronics has crossed the boundary of conventional, all metallic, solid state multi-layered structures to reach a new frontier, where nanostructures provide a pathway for the spin-carriers. Different materials such as organic and inorganic nanostructures are explored for possible applications in spintronics. In this short review, we focus on the boron nitride nanotube (BNNT), which has recently been explored for possible applications in spintronics. Unlike many organic materials, BNNTs offer higher thermal stability and higher resistance to oxidation. It has been reported that the metal-free fluorinated BNNT exhibits long range ferromagnetic spin ordering, which is stable at a temperature much higher than room temperature. Due to their large band gap, BNNTs are also explored as a tunnel magneto resistance device. In addition, the F-BNNT has recently been predicted as an ideal spin-filter. The purpose of this review is to highlight these recent progresses so that a concerted effort by both experimentalists and theorists can be carried out in the future to realize the true potential of BNNT-based spintronics.

  17. Growth of gallium nitride and indium nitride nanowires on conductive and flexible carbon cloth substrates. (United States)

    Yang, Yi; Ling, Yichuan; Wang, Gongming; Lu, Xihong; Tong, Yexiang; Li, Yat


    We report a general strategy for synthesis of gallium nitride (GaN) and indium nitride (InN) nanowires on conductive and flexible carbon cloth substrates. GaN and InN nanowires were prepared via a nanocluster-mediated growth method using a home built chemical vapor deposition (CVD) system with Ga and In metals as group III precursors and ammonia as a group V precursor. Electron microscopy studies reveal that the group III-nitride nanowires are single crystalline wurtzite structures. The morphology, density and growth mechanism of these nanowires are determined by the growth temperature. Importantly, a photoelectrode fabricated by contacting the GaN nanowires through a carbon cloth substrate shows pronounced photoactivity for photoelectrochemical water oxidation. The ability to synthesize group III-nitride nanowires on conductive and flexible substrates should open up new opportunities for nanoscale photonic, electronic and electrochemical devices.

  18. Evidence for Argon Content in Pure Oxygen from Thermal Data (United States)

    Steur, Peter P. M.; Yang, Inseok; Pavese, Franco


    Since many years it is known that argon impurities in oxygen change the temperature of the oxygen triple point by +12 K{\\cdot }mol^{-1} (positive, while most impurities decrease the temperature) without any effect on the melting range of this transition, for the impurity concentrations usually encountered in nominally pure gases. It has been hypothesized that thermal measurements on the α -β solid-to-solid transition at 23.8 K or the β -γ solid-to-solid transition at 43.8 K may give reliable evidence regarding the argon content. However, such measurements require very long times for full completion of each transition (with prohibitive costs if liquid helium is used) and for the α -β solid-to-solid transition the heat pulse method cannot be applied reliably. The availability of closed-cycle refrigerators permits the first obstacle to be surmounted. The automatic system earlier developed at INRIM during the EU Multicells project and used extensively for the project on the isotopic effect in neon is perfectly suited for such measurements. Thus, the uncertainties of the temperature measurements are similar to those obtained previously (of the order of 0.1 mK or less). Three argon-in-oxygen mixtures were prepared gravimetrically and certified at KRISS, just as was previously done for the work on the neon isotopic compositions. Results of continuous-current measurements on the α -β solid-to-solid transition, along with the triple-point data obtained with the heat pulse method, are presented for one cell with a known doped argon content, to be compared with similar data from a cell with oxygen of very high purity. In addition, some preliminary data for the β -γ solid-to-solid transition are given. The measurements on the mixture with the highest argon content, about 1002 μmol{\\cdot } mol^{-1}, imply a (linear) sensitivity of (116 ± 7) K{\\cdot }mol^{-1} for the α -β transition. This sensitivity may be different at much lower argon contents, and follow

  19. A pressurized argon gas TPC as DUNE near detector

    CERN Document Server

    Martin-Albo, J


    DUNE is a new international experiment for neutrino physics and nucleon decay searches. It will consist of two detectors, about 1300 km apart, exposed to a multi-megawatt neutrino beam that will be built at Fermilab. One of the two detectors will be installed several hundred meters downstream of the neutrino production point with the primary role of characterising the energy spectrum and composition of the beam as well as performing precision measurements of neutrino cross sections. For the design of this so-called near detector, the DUNE Collaboration is considering, among other technologies, a pressurized argon gas time projection chamber. Such a detector, thanks to its low density and low detection thresholds, would allow the detailed measurement in argon of nuclear effects at the neutrino interaction vertex, which are considered at present one of the most important sources of systematic uncertainty for neutrino oscillation measurements.

  20. Trimming of a Migrated Biliary Nitinol Stent Using Argon Plasma

    Directory of Open Access Journals (Sweden)

    Hiroyuki Matsubayashi


    Full Text Available Metallic stent migration is a well-known complication which cannot always be managed by removal or repositioning, especially in case of uncovered stent. We report a patient who developed obstructive jaundice due to migration of an expandable metallic stent (EMS inserted in the lower bile duct. Trimming of the EMS using argon plasma was performed, with the power setting of 60 W and 2.0 l/min of argon flow. The distal part of the EMS was removed and mechanical cleaning using balloon catheter was performed for remnant EMS. Without additional stent insertion, jaundice was relieved in a few days. No complication was recognized during the procedure and no recurrence of jaundice in the rest of his life.

  1. Measurement of longitudinal electron diffusion in liquid argon

    Energy Technology Data Exchange (ETDEWEB)

    Li, Yichen, E-mail: [Physics Department, Brookhaven National Laboratory, 20 Pennsylvania St., Building 510E, Upton, NY 11973 (United States); Tsang, Thomas [Instrumentation Division, Brookhaven National Laboratory, 20 N. Technology St., Building 535B, Upton, NY 11973 (United States); Thorn, Craig; Qian, Xin; Diwan, Milind; Joshi, Jyoti; Kettell, Steve; Morse, William [Physics Department, Brookhaven National Laboratory, 20 Pennsylvania St., Building 510E, Upton, NY 11973 (United States); Rao, Triveni [Instrumentation Division, Brookhaven National Laboratory, 20 N. Technology St., Building 535B, Upton, NY 11973 (United States); Stewart, James; Tang, Wei; Viren, Brett [Physics Department, Brookhaven National Laboratory, 20 Pennsylvania St., Building 510E, Upton, NY 11973 (United States)


    We report the measurement of longitudinal electron diffusion coefficients in liquid argon for electric fields between 100 and 2000 V/cm with a gold photocathode as a bright electron source. The measurement principle, apparatus, and data analysis are described. In the region between 100 and 350 V/cm, our results show a discrepancy with the previous measurement [1]. In the region between 350 and 2000 V/cm, our results represent the world's best measurement. Over the entire measured electric field range, our results are systematically higher than the calculation of Atrazhev‐Timoshkin [2]. The quantum efficiency of the gold photocathode, the drift velocity and longitudinal diffusion coefficients in gas argon are also presented.

  2. Breakdown voltage of metal-oxide resistors in liquid argon

    Energy Technology Data Exchange (ETDEWEB)

    Bagby, L. F. [Fermilab; Gollapinni, S. [Kansas State U.; James, C. C. [Fermilab; Jones, B. J.P. [MIT; Jostlein, H. [Fermilab; Lockwitz, S. [Fermilab; Naples, D. [Pittsburgh U.; Raaf, J. L. [Fermilab; Rameika, R. [Fermilab; Schukraft, A. [Fermilab; Strauss, T. [Bern U., LHEP; Weber, M. S. [Bern U., LHEP; Wolbers, S. A. [Fermilab


    We characterized a sample of metal-oxide resistors and measured their breakdown voltage in liquid argon by applying high voltage (HV) pulses over a 3 second period. This test mimics the situation in a HV-divider chain when a breakdown occurs and the voltage across resistors rapidly rise from the static value to much higher values. All resistors had higher breakdown voltages in liquid argon than their vendor ratings in air at room temperature. Failure modes range from full destruction to coating damage. In cases where breakdown was not catastrophic, subsequent breakdown voltages were lower in subsequent measuring runs. One resistor type withstands 131 kV pulses, the limit of the test setup.

  3. Readiness of the ATLAS Liquid Argon Calorimeter for LHC Collisions

    CERN Document Server

    Aad, G; Abdallah, J; Abdelalim, A A; Abdesselam, A; Abdinov, O; Abi, B; Abolins, M; Abramowicz, H; Abreu, H; Acharya, B S; Adams, D L; Addy, T N; Adelman, J; Adorisio, C; Adragna, P; Adye, T; Aefsky, S; Aguilar-Saavedra, J A; Aharrouche, M; Ahlen, S P; Ahles, F; Ahmad, A; Ahmed, H; Ahsan, M; Aielli, G; Akdogan, T; Åkesson, T P A; Akimoto, G; Akimov, A V; Aktas, A; Alam, M S; Alam, M A; Albert, J; Albrand, S; Aleksa, M; Aleksandrov, I N; Alessandria, F; Alexa, C; Alexander, G; Alexandre, G; Alexopoulos, T; Alhroob, M; Aliev, M; Alimonti, G; Alison, J; Aliyev, M; Allport, P P; Allwood-Spiers, S E; Almond, J; Aloisio, A; Alon, R; Alonso, A; Alviggi, M G; Amako, K; Amelung, C; Ammosov, V V; Amorim, A; Amorós, G; Amram, N; Anastopoulos, C; Andeen, T; Anders, C F; Anderson, K J; Andreazza, A; Andrei, V; Anduaga, X S; Angerami, A; Anghinolfi, F; Anjos, N; Antonaki, A; Antonelli, M; Antonelli, S; Antunovic, B; Anulli, F; Aoun, S; Arabidze, G; Aracena, I; Arai, Y; Arce, A T H; Archambault, J P; Arfaoui, S; Arguin, J-F; Argyropoulos, T; Arik, E; Arik, M; Armbruster, A J; Arnaez, O; Arnault, C; Artamonov, A; Arutinov, D; Asai, M; Asai, S; Asfandiyarov, R; Ask, S; Åsman, B; Asner, D; Asquith, L; Assamagan, K; Astbury, A; Astvatsatourov, A; Atoian, G; Auerbach, B; Auge, E; Augsten, K; Aurousseau, M; Austin, N; Avolio, G; Avramidou, R; Axen, D; Ay, C; Azuelos, G; Azuma, Y; Baak, M A; Baccaglioni, G; Bacci, C; Bach, A; Bachacou, H; Bachas, K; Backes, M; Badescu, E; Bagnaia, P; Bai, Y; Bailey, D C; Bain, T; Baines, J T; Baker, O K; Baker, M D; Baltasar Dos Santos Pedrosa, F; Banas, E; Banerjee, P; Banerjee, S; Banfi, D; Bangert, A; Bansal, V; Baranov, S P; Baranov, S; Barashkou, A; Barber, T; Barberio, E L; Barberis, D; Barbero, M; Bardin, D Y; Barillari, T; Barisonzi, M; Barklow, T; Barlow, N; Barnett, B M; Barnett, R M; Baron, S; Baroncelli, A; Barr, A J; Barreiro, F; BarreiroGuimarães da Costa, J; Barrillon, P; Barros, N; Bartoldus, R; Bartsch, D; Bastos, J; Bates, R L; Bathe, S; Batkova, L; Batley, J R; Battaglia, A; Battistin, M; Bauer, F; Bawa, H S; Bazalova, M; Beare, B; Beau, T; Beauchemin, P H; Beccherle, R; Becerici, N; Bechtle, P; Beck, G A; Beck, H P; Beckingham, M; Becks, K H; Bedajanek, I; Beddall, A J; Beddall, A; Bednár, P; Bednyakov, V A; Bee, C; Begel, M; Behar Harpaz, S; Behera, P K; Beimforde, M; Belanger-Champagne, C; Bell, P J; Bell, W H; Bella, G; Bellagamba, L; Bellina, F; Bellomo, M; Belloni, A; Belotskiy, K; Beltramello, O; Ben Ami, S; Benary, O; Benchekroun, D; Bendel, M; Benedict, B H; Benekos, N; Benhammou, Y; Benincasa, G P; Benjamin, D P; Benoit, M; Bensinger, J R; Benslama, K; Bentvelsen, S; Beretta, M; Berge, D; Bergeaas Kuutmann, E; Berger, N; Berghaus, F; Berglund, E; Beringer, J; Bernardet, K; Bernat, P; Bernhard, R; Bernius, C; Berry, T; Bertin, A; Besson, N; Bethke, S; Bianchi, R M; Bianco, M; Biebel, O; Biesiada, J; Biglietti, M; Bilokon, H; Bindi, M; Binet, S; Bingul, A; Bini, C; Biscarat, C; Bitenc, U; Black, K M; Blair, R E; Blanchard, J-B; Blanchot, G; Blocker, C; Blocki, J; Blondel, A; Blum, W; Blumenschein, U; Bobbink, G J; Bocci, A; Boehler, M; Boek, J; Boelaert, N; Böser, S; Bogaerts, J A; Bogouch, A; Bohm, C; Bohm, J; Boisvert, V; Bold, T; Boldea, V; Boldyrev, A; Bondarenko, V G; Bondioli, M; Boonekamp, M; Booth, J R A; Bordoni, S; Borer, C; Borisov, A; Borissov, G; Borjanovic, I; Borroni, S; Bos, K; Boscherini, D; Bosman, M; Bosteels, M; Boterenbrood, H; Bouchami, J; Boudreau, J; Bouhova-Thacker, E V; Boulahouache, C; Bourdarios, C; Boyd, J; Boyko, I R; Bozovic-Jelisavcic, I; Bracinik, J; Braem, A; Branchini, P; Brandenburg, G W; Brandt, A; Brandt, G; Brandt, O; Bratzler, U; Brau, B; Brau, J E; Braun, H M; Brelier, B; Bremer, J; Brenner, R; Bressler, S; Breton, D; Brett, N D; Britton, D; Brochu, F M; Brock, I; Brock, R; Brodbeck, T J; Brodet, E; Broggi, F; Bromberg, C; Brooijmans, G; Brooks, W K; Brown, G; Brubaker, E; Bruckman de Renstrom, P A; Bruncko, D; Bruneliere, R; Brunet, S; Bruni, A; Bruni, G; Bruschi, M; Buanes, T; Bucci, F; Buchanan, J; Buchholz, P; Buckley, A G; Budagov, I A; Budick, B; Büscher, V; Bugge, L; Bulekov, O; Bunse, M; Buran, T; Burckhart, H; Burdin, S; Burgess, T; Burke, S; Busato, E; Bussey, P; Buszello, C P; Butin, F; Butler, B; Butler, J M; Buttar, C M; Butterworth, J M; Byatt, T; Caballero, J; Cabrera Urbán, S; Caforio, D; Cakir, O; Calafiura, P; Calderini, G; Calfayan, P; Calkins, R; Caloba, L P; Caloi, R; Calvet, D; Camarri, P; Cambiaghi, M; Cameron, D; Campabadal-Segura, F; Campana, S; Campanelli, M; Canale, V; Canelli, F; Canepa, A; Cantero, J; Capasso, L; Capeans-Garrido, M D M; Caprini, I; Caprini, M; Capua, M; Caputo, R; Caracinha, D; Caramarcu, C; Cardarelli, R; Carli, T; Carlino, G; Carminati, L; Caron, B; Caron, S; Carrillo Montoya, G D; Carron Montero, S; Carter, A A; Carter, J R; Carvalho, J; Casadei, D; Casado, M P; Cascella, M; Caso, C; Castaneda Hernadez, A M; Castaneda-Miranda, E; Castillo Gimenez, V; Castro, N; Cataldi, G; Catinaccio, A; Catmore, J R; Cattai, A; Cattani, G; Caughron, S; Cauz, D; Cavalleri, P; Cavalli, D; Cavalli-Sforza, M; Cavasinni, V; Ceradini, F; Cerqueira, A S; Cerri, A; Cerrito, L; Cerutti, F; Cetin, S A; Cevenini, F; Chafaq, A; Chakraborty, D; Chan, K; Chapman, J D; Chapman, J W; Chareyre, E; Charlton, D G; Chavda, V; Cheatham, S; Chekanov, S; Chekulaev, S V; Chelkov, G A; Chen, H; Chen, S; Chen, T; Chen, X; Cheng, S; Cheplakov, A; Chepurnov, V F; Cherkaoui El Moursli, R; Tcherniatine, V; Chesneanu, D; Cheu, E; Cheung, S L; Chevalier, L; Chevallier, F; Chiarella, V; Chiefari, G; Chikovani, L; Childers, J T; Chilingarov, A; Chiodini, G; Chizhov, M; Choudalakis, G; Chouridou, S; Chren, D; Christidi, I A; Christov, A; Chromek-Burckhart, D; Chu, M L; Chudoba, J; Ciapetti, G; Ciftci, A K; Ciftci, R; Cinca, D; Cindro, V; Ciobotaru, M D; Ciocca, C; Ciocio, A; Cirilli, M; Citterio, M; Clark, A; Cleland, W; Clemens, J C; Clement, B; Clement, C; Clements, D; Coadou, Y; Cobal, M; Coccaro, A; Cochran, J; Coelli, S; Coggeshall, J; Cogneras, E; Cojocaru, C D; Colas, J; Cole, B; Colijn, A P; Collard, C; Collins, N J; Collins-Tooth, C; Collot, J; Colon, G; Coluccia, R; Conde Muiño, P; Coniavitis, E; Consonni, M; Constantinescu, S; Conta, C; Conventi, F; Cook, J; Cooke, M; Cooper, B D; Cooper-Sarkar, A M; Cooper-Smith, N J; Copic, K; Cornelissen, T; Corradi, M; Corriveau, F; Corso-Radu, A; Cortes-Gonzalez, A; Cortiana, G; Costa, G; Costa, M J; Costanzo, D; Costin, T; Côté, D; Coura Torres, R; Courneyea, L; Cowan, G; Cowden, C; Cox, B E; Cranmer, K; Cranshaw, J; Cristinziani, M; Crosetti, G; Crupi, R; Crépé-Renaudin, S; Cuenca Almenar, C; Cuhadar Donszelmann, T; Curatolo, M; Curtis, C J; Cwetanski, P; Czyczula, Z; D'Auria, S; D'Onofrio, M; D'Orazio, A; Da Silva, P V M; Da Via, C; Dabrowski, W; Dai, T; Dallapiccola, C; Dallison, S J; Daly, C H; Dam, M; Danielsson, H O; Dannheim, D; Dao, V; Darbo, G; Darlea, G L; Davey, W; Davidek, T; Davidson, N; Davidson, R; Davison, A R; Dawson, I; Dawson, J W; Daya, R K; De, K; de Asmundis, R; De Castro, S; De Castro Faria Salgado, P E; De Cecco, S; de Graat, J; De Groot, N; de Jong, P; De La Cruz Burelo, E; De La Taille, C; De Mora, L; De Oliveira Branco, M; De Pedis, D; De Salvo, A; De Sanctis, U; De Santo, A; De Vivie De Regie, J B; De Zorzi, G; Dean, S; Deberg, H; Dedes, G; Dedovich, D V; Defay, P O; Degenhardt, J; Dehchar, M; Del Papa, C; Del Peso, J; Del Prete, T; Dell'Acqua, A; Dell'Asta, L; Della Pietra, M; della Volpe, D; Delmastro, M; Delruelle, N; Delsart, P A; Deluca, C; Demers, S; Demichev, M; Demirkoz, B; Deng, J; Deng, W; Denisov, S P; Dennis, C; Derkaoui, J E; Derue, F; Dervan, P; Desch, K; Deviveiros, P O; Dewhurst, A; DeWilde, B; Dhaliwal, S; Dhullipudi, R; Di Ciaccio, A; Di Ciaccio, L; Di Domenico, A; Di Girolamo, A; Di Girolamo, B; Di Luise, S; Di Mattia, A; Di Nardo, R; Di Simone, A; Di Sipio, R; Diaz, M A; Diblen, F; Diehl, E B; Dietrich, J; Diglio, S; Dindar Yagci, K; Dingfelder, D J; Dionisi, C; Dita, P; Dita, S; Dittus, F; Djama, F; Djilkibaev, R; Djobava, T; do Vale, M A B; Do Valle Wemans, A; Dobbs, M; Dobos, D; Dobson, E; Dobson, M; Dodd, J; Dogan, O B; Doherty, T; Doi, Y; Dolejsi, J; Dolenc, I; Dolezal, Z; Dolgoshein, B A; Dohmae, T; Donega, M; Donini, J; Dopke, J; Doria, A; Dos Anjos, A; Dotti, A; Dova, M T; Doxiadis, A; Doyle, A T; Drasal, Z; Driouichi, C; Dris, M; Dubbert, J; Duchovni, E; Duckeck, G; Dudarev, A; Dudziak, F; Dührssen , M; Duflot, L; Dufour, M-A; Dunford, M; Duperrin, A; Duran-Yildiz, H; Dushkin, A; Duxfield, R; Dwuznik, M; Düren, M; Ebenstein, W L; Ebke, J; Eckert, S; Eckweiler, S; Edmonds, K; Edwards, C A; Eerola, P; Egorov, K; Ehrenfeld, W; Ehrich, T; Eifert, T; Eigen, G; Einsweiler, K; Eisenhandler, E; Ekelof, T; El Kacimi, M; Ellert, M; Elles, S; Ellinghaus, F; Ellis, K; Ellis, N; Elmsheuser, J; Elsing, M; Ely, R; Emeliyanov, D; Engelmann, R; Engl, A; Epp, B; Eppig, A; Epshteyn, V S; Ereditato, A; Eriksson, D; Ermoline, I; Ernst, J; Ernst, M; Ernwein, J; Errede, D; Errede, S; Ertel, E; Escalier, M; Escobar, C; Espinal Curull, X; Esposito, B; Etienne, F; Etienvre, A I; Etzion, E; Evans, H; Fabbri, L; Fabre, C; Faccioli, P; Facius, K; Fakhrutdinov, R M; Falciano, S; Falou, A C; Fang, Y; Fanti, M; Farbin, A; Farilla, A; Farley, J; Farooque, T; Farrington, S M; Farthouat, P; Fassi, F; Fassnacht, P; Fassouliotis, D; Fatholahzadeh, B; Fayard, L; Fayette, F; Febbraro, R; Federic, P; Fedin, O L; Fedorko, I; Fedorko, W; Feligioni, L; Felzmann, C U; Feng, C; Feng, E J; Fenyuk, A B; Ferencei, J; Ferland, J; Fernandes, B; Fernando, W; Ferrag, S; Ferrando, J; Ferrari, A; Ferrari, P; Ferrari, R; Ferrer, A; Ferrer, M L; Ferrere, D; Ferretti, C; Fiascaris, M; Fiedler, F; Filipcic, A; Filippas, A; Filthaut, F; Fincke-Keeler, M; Fiolhais, M C N; Fiorini, L; Firan, A; Fischer, G; Fisher, M J; Flechl, M; Fleck, I; Fleckner, J; Fleischmann, P; Fleischmann, S; Flick, T; Flores-Castillo, L R; Flowerdew, M J; Föhlisch, F; Fokitis, M; Fonseca Martin, T; Forbush, D A; Formica, A; Forti, A; Fortin, D; Foster, J M; Fournier, D; Foussat, A; Fowler, A J; Fowler, K; Fox, H; Francavilla, P; Franchino, S; Francis, D; Franklin, M; Franz, S; Fraternali, M; Fratina, S; Freestone, J; French, S T; Froeschl, R; Froidevaux, D; Frost, J A; Fukunaga, C; Fullana Torregrosa, E; Fuster, J; Gabaldon, C; Gabizon, O; Gadfort, T; Gadomski, S; Gagliardi, G; Gagnon, P; Galea, C; Gallas, E J; Gallas, M V; Gallop, B J; Gallus, P; Galyaev, E; Gan, K K; Gao, Y S; Gaponenko, A; Garcia-Sciveres, M; Garcí­a, C; Garcí­a Navarro, J E; Gardner, R W; Garelli, N; Garitaonandia, H; Garonne, V; Gatti, C; Gaudio, G; Gaumer, O; Gauzzi, P; Gavrilenko, I L; Gay, C; Gaycken, G; Gayde, J-C; Gazis, E N; Ge, P; Gee, C N P; Geich-Gimbel, Ch; Gellerstedt, K; Gemme, C; Genest, M H; Gentile, S; Georgatos, F; George, S; Gerlach, P; Gershon, A; Geweniger, C; Ghazlane, H; Ghez, P; Ghodbane, N; Giacobbe, B; Giagu, S; Giakoumopoulou, V; Giangiobbe, V; Gianotti, F; Gibbard, B; Gibson, A; Gibson, S M; Gilbert, L M; Gilchriese, M; Gilewsky, V; Gillberg, D; Gillman, A R; Gingrich, D M; Ginzburg, J; Giokaris, N; Giordani, M P; Giordano, R; Giovannini, P; Giraud, P F; Girtler, P; Giugni, D; Giusti, P; Gjelsten, B K; Gladilin, L K; Glasman, C; Glazov, A; Glitza, K W; Glonti, G L; Godfrey, J; Godlewski, J; Goebel, M; Göpfert, T; Goeringer, C; Gössling, C; Göttfert, T; Goggi, V; Goldfarb, S; Goldin, D; Golling, T; Gollub, N P; Gomes, A; Gomez Fajardo, L S; Gonçalo, R; Gonella, L; Gong, C; González de la Hoz, S; Gonzalez Silva, M L; Gonzalez-Sevilla, S; Goodson, J J; Goossens, L; Gorbounov, P A; Gordon, H A; Gorelov, I; Gorfine, G; Gorini, B; Gorini, E; Gorisek, A; Gornicki, E; Goryachev, S V; Goryachev, V N; Gosdzik, B; Gosselink, M; Gostkin, M I; Gough Eschrich, I; Gouighri, M; Goujdami, D; Goulette, M P; Goussiou, A G; Goy, C; Grabowska-Bold, I; Grafström, P; Grahn, K-J; Granado Cardoso, L; Grancagnolo, F; Grancagnolo, S; Grassi, V; Gratchev, V; Grau, N; Gray, H M; Gray, J A; Graziani, E; Green, B; Greenshaw, T; Greenwood, Z D; Gregor, I M; Grenier, P; Griesmayer, E; Griffiths, J; Grigalashvili, N; Grillo, A A; Grimm, K; Grinstein, S; Grishkevich, Y V; Groer, L S; Grognuz, J; Groh, M; Groll, M; Gross, E; Grosse-Knetter, J; Groth-Jensen, J; Grybel, K; Guarino, V J; Guicheney, C; Guida, A; Guillemin, T; Guler, H; Gunther, J; Guo, B; Gupta, A; Gusakov, Y; Gutierrez, A; Gutierrez, P; Guttman, N; Gutzwiller, O; Guyot, C; Gwenlan, C; Gwilliam, C B; Haas, A; Haas, S; Haber, C; Hackenburg, R; Hadavand, H K; Hadley, D R; Haefner, P; Härtel, R; Hajduk, Z; Hakobyan, H; Haller, J; Hamacher, K; Hamilton, A; Hamilton, S; Han, H; Han, L; Hanagaki, K; Hance, M; Handel, C; Hanke, P; Hansen, J R; Hansen, J B; Hansen, J D; Hansen, P H; Hansl-Kozanecka, T; Hansson, P; Hara, K; Hare, G A; Harenberg, T; Harrington, R D; Harris, O B; Harris, O M; Harrison, K; Hartert, J; Hartjes, F; Haruyama, T; Harvey, A; Hasegawa, S; Hasegawa, Y; Hashemi, K; Hassani, S; Hatch, M; Haug, F; Haug, S; Hauschild, M; Hauser, R; Havranek, M; Hawkes, C M; Hawkings, R J; Hawkins, D; Hayakawa, T; Hayward, H S; Haywood, S J; He, M; Head, S J; Hedberg, V; Heelan, L; Heim, S; Heinemann, B; Heisterkamp, S; Helary, L; Heller, M; Hellman, S; Helsens, C; Hemperek, T; Henderson, R C W; Henke, M; Henrichs, A; Henriques-Correia, A M; Henrot-Versille, S; Hensel, C; Henß, T; Hershenhorn, A D; Herten, G; Hertenberger, R; Hervas, L; Hessey, N P; Hidvegi, A; Higón-Rodriguez, E; Hill, D; Hill, J C; Hiller, K H; Hillier, S J; Hinchliffe, I; Hirose, M; Hirsch, F; Hobbs, J; Hod, N; Hodgkinson, M C; Hodgson, P; Hoecker, A; Hoeferkamp, M R; Hoffman, J; Hoffmann, D; Hohlfeld, M; Holmgren, S O; Holy, T; Holzbauer, J L; Homma, Y; Homola, P; Horazdovsky, T; Hori, T; Horn, C; Horner, S; Horvat, S; Hostachy, J-Y; Hou, S; Houlden, M A; Hoummada, A; Howe, T; Hrivnac, J; Hryn'ova, T; Hsu, P J; Hsu, S-C; Huang, G S; Hubacek, Z; Hubaut, F; Huegging, F; Hughes, E W; Hughes, G; Hughes-Jones, R E; Hurst, P; Hurwitz, M; Husemann, U; Huseynov, N; Huston, J; Huth, J; Iacobucci, G; Iakovidis, G; Ibragimov, I; Iconomidou-Fayard, L; Idarraga, J; Iengo, P; Igonkina, O; Ikegami, Y; Ikeno, M; Ilchenko, Y; Iliadis, D; Ilyushenka, Y; Imori, M; Ince, T; Ioannou, P; Iodice, M; Irles-Quiles, A; Ishikawa, A; Ishino, M; Ishmukhametov, R; Isobe, T; Issakov, V; Issever, C; Istin, S; Itoh, Y; Ivashin, A V; Iwanski, W; Iwasaki, H; Izen, J M; Izzo, V; Jackson, J N; Jackson, P; Jaekel, M; Jahoda, M; Jain, V; Jakobs, K; Jakobsen, S; Jakubek, J; Jana, D; Jansen, E; Jantsch, A; Janus, M; Jared, R C; Jarlskog, G; Jarron, P; Jeanty, L; Jelen, K; Jen-La Plante, I; Jenni, P; Jez, P; Jézéquel, S; Ji, W; Jia, J; Jiang, Y; Jimenez Belenguer, M; Jin, G; Jin, S; Jinnouchi, O; Joffe, D; Johansen, M; Johansson, K E; Johansson, P; Johnert, S; Johns, K A; Jon-And, K; Jones, G; Jones, R W L; Jones, T W; Jones, T J; Jonsson, O; Joos, D; Joram, C; Jorge, P M; Juranek, V; Jussel, P; Kabachenko, V V; Kabana, S; Kaci, M; Kaczmarska, A; Kado, M; Kagan, H; Kagan, M; Kaiser, S; Kajomovitz, E; Kalinovskaya, L V; Kalinowski, A; Kama, S; Kanaya, N; Kaneda, M; Kantserov, V A; Kanzaki, J; Kaplan, B; Kapliy, A; Kaplon, J; Karagounis, M; Karagoz Unel, M; Kartvelishvili, V; Karyukhin, A N; Kashif, L; Kasmi, A; Kass, R D; Kastanas, A; Kastoryano, M; Kataoka, M; Kataoka, Y; Katsoufis, E; Katzy, J; Kaushik, V; Kawagoe, K; Kawamoto, T; Kawamura, G; Kayl, M S; Kayumov, F; Kazanin, V A; Kazarinov, M Y; Kazi, S I; Keates, J R; Keeler, R; Keener, P T; Kehoe, R; Keil, M; Kekelidze, G D; Kelly, M; Kennedy, J; Kenyon, M; Kepka, O; Kerschen, N; Kersevan, B P; Kersten, S; Kessoku, K; Khakzad, M; Khalil-zada, F; Khandanyan, H; Khanov, A; Kharchenko, D; Khodinov, A; Kholodenko, A G; Khomich, A; Khoriauli, G; Khovanskiy, N; Khovanskiy, V; Khramov, E; Khubua, J; Kilvington, G; Kim, H; Kim, M S; Kim, P C; Kim, S H; Kind, O; Kind, P; King, B T; Kirk, J; Kirsch, G P; Kirsch, L E; Kiryunin, A E; Kisielewska, D; Kittelmann, T; Kiyamura, H; Kladiva, E; Klein, M; Klein, U; Kleinknecht, K; Klemetti, M; Klier, A; Klimentov, A; Klingenberg, R; Klinkby, E B; Klioutchnikova, T; Klok, P F; Klous, S; Kluge, E-E; Kluge, T; Kluit, P; Klute, M; Kluth, S; Knecht, N S; Kneringer, E; Ko, B R; Kobayashi, T; Kobel, M; Koblitz, B; Kocian, M; Kocnar, A; Kodys, P; Köneke, K; König, A C; Köpke, L; Koetsveld, F; Koevesarki, P; Koffas, T; Koffeman, E; Kohn, F; Kohout, Z; Kohriki, T; Kokott, T; Kolanoski, H; Kolesnikov, V; Koletsou, I; Koll, J; Kollar, D; Kolos, S; Kolya, S D; Komar, A A; Komaragiri, J R; Kondo, T; Kono, T; Kononov, A I; Konoplich, R; Konovalov, S P; Konstantinidis, N; Koperny, S; Korcyl, K; Kordas, K; Koreshev, V; Korn, A; Korolkov, I; Korolkova, E V; Korotkov, V A; Kortner, O; Kostka, P; Kostyukhin, V V; Kotamäki, M J; Kotov, S; Kotov, V M; Kotov, K Y; Koupilova, Z; Kourkoumelis, C; Koutsman, A; Kowalewski, R; Kowalski, H; Kowalski, T Z; Kozanecki, W; Kozhin, A S; Kral, V; Kramarenko, V A; Kramberger, G; Krasny, M W; Krasznahorkay, A; Kreisel, A; Krejci, F; Krepouri, A; Kretzschmar, J; Krieger, P; Krobath, G; Kroeninger, K; Kroha, H; Kroll, J; Kroseberg, J; Krstic, J; Kruchonak, U; Krüger, H; Krumshteyn, Z V; Kubota, T; Kuehn, S; Kugel, A; Kuhl, T; Kuhn, D; Kukhtin, V; Kulchitsky, Y; Kuleshov, S; Kummer, C; Kuna, M; Kupco, A; Kurashige, H; Kurata, M; Kurchaninov, L L; Kurochkin, Y A; Kus, V; Kuykendall, W; Kuznetsova, E; Kvasnicka, O; Kwee, R; La Rosa, M; La Rotonda, L; Labarga, L; Labbe, J; Lacasta, C; Lacava, F; Lacker, H; Lacour, D; Lacuesta, V R; Ladygin, E; Lafaye, R; Laforge, B; Lagouri, T; Lai, S; Lamanna, M; Lampen, C L; Lampl, W; Lancon, E; Landgraf, U; Landon, M P J; Lane, J L; Lankford, A J; Lanni, F; Lantzsch, K; Lanza, A; Laplace, S; Lapoire, C; Laporte, J F; Lari, T; Larionov, A V; Larner, A; Lasseur, C; Lassnig, M; Laurelli, P; Lavrijsen, W; Laycock, P; Lazarev, A B; Lazzaro, A; Le Dortz, O; Le Guirriec, E; Le Maner, C; Le Menedeu, E; Le Vine, M; Leahu, M; Lebedev, A; Lebel, C; LeCompte, T; Ledroit-Guillon, F; Lee, H; Lee, J S H; Lee, S C; Lefebvre, M; Legendre, M; LeGeyt, B C; Legger, F; Leggett, C; Lehmacher, M; Lehmann Miotto, G; Lei, X; Leitner, R; Lelas, D; Lellouch, D; Lellouch, J; Leltchouk, M; Lendermann, V; Leney, K J C; Lenz, T; Lenzen, G; Lenzi, B; Leonhardt, K; Leroy, C; Lessard, J-R; Lester, C G; Leung Fook Cheong, A; Levêque, J; Levin, D; Levinson, L J; Levitski, M S; Levonian, S; Lewandowska, M; Leyton, M; Li, H; Li, J; Li, S; Li, X; Liang, Z; Liang, Z; Liberti, B; Lichard, P; Lichtnecker, M; Lie, K; Liebig, W; Liko, D; Lilley, J N; Lim, H; Limosani, A; Limper, M; Lin, S C; Lindsay, S W; Linhart, V; Linnemann, J T; Liolios, A; Lipeles, E; Lipinsky, L; Lipniacka, A; Liss, T M; Lissauer, D; Litke, A M; Liu, C; Liu, D; Liu, H; Liu, J B; Liu, M; Liu, S; Liu, T; Liu, Y; Livan, M; Lleres, A; Lloyd, S L; Lobodzinska, E; Loch, P; Lockman, W S; Lockwitz, S; Loddenkoetter, T; Loebinger, F K; Loginov, A; Loh, C W; Lohse, T; Lohwasser, K; Lokajicek, M; Loken, J; Lopes, L; Lopez Mateos, D; Losada, M; Loscutoff, P; Losty, M J; Lou, X; Lounis, A; Loureiro, K F; Lovas, L; Love, J; Love, P; Lowe, A J; Lu, F; Lu, J; Lubatti, H J; Luci, C; Lucotte, A; Ludwig, A; Ludwig, D; Ludwig, I; Ludwig, J; Luehring, F; Luisa, L; Lumb, D; Luminari, L; Lund, E; Lund-Jensen, B; Lundberg, B; Lundberg, J; Lundquist, J; Lutz, G; Lynn, D; Lys, J; Lytken, E; Ma, H; Ma, L L; Maccarrone, G; Macchiolo, A; Macek, B; Machado Miguens, J; Mackeprang, R; Madaras, R J; Mader, W F; Maenner, R; Maeno, T; Mättig, P; Mättig, S; Magalhaes Martins, P J; Magradze, E; Magrath, C A; Mahalalel, Y; Mahboubi, K; Mahmood, A; Mahout, G; Maiani, C; Maidantchik, C; Maio, A; Majewski, S; Makida, Y; Makouski, M; Makovec, N; Malecki, Pa; Malecki, P; Maleev, V P; Malek, F; Mallik, U; Malon, D; Maltezos, S; Malyshev, V; Malyukov, S; Mambelli, M; Mameghani, R; Mamuzic, J; Manabe, A; Mandelli, L; Mandic, I; Mandrysch, R; Maneira, J; Mangeard, P S; Manjavidze, I D; Manousakis-Katsikakis, A; Mansoulie, B; Mapelli, A; Mapelli, L; March, L; Marchand, J F; Marchese, F; Marcisovsky, M; Marino, C P; Marques, C N; Marroquim, F; Marshall, R; Marshall, Z; Martens, F K; Marti i Garcia, S; Martin, A J; Martin, A J; Martin, B; Martin, B; Martin, F F; Martin, J P; Martin, T A; Martin dit Latour, B; Martinez, M; Martinez Outschoorn, V; Martini, A; Martynenko, V; Martyniuk, A C; Maruyama, T; Marzano, F; Marzin, A; Masetti, L; Mashimo, T; Mashinistov, R; Masik, J; Maslennikov, A L; Massaro, G; Massol, N; Mastroberardino, A; Masubuchi, T; Mathes, M; Matricon, P; Matsumoto, H; Matsunaga, H; Matsushita, T; Mattravers, C; Maxfield, S J; May, E N; Mayne, A; Mazini, R; Mazur, M; Mazzanti, M; Mazzanti, P; Mc Donald, J; Mc Kee, S P; McCarn, A; McCarthy, R L; McCubbin, N A; McFarlane, K W; McGlone, H; Mchedlidze, G; McLaren, R A; McMahon, S J; McMahon, T R; McPherson, R A; Meade, A; Mechnich, J; Mechtel, M; Medinnis, M; Meera-Lebbai, R; Meguro, T M; Mehdiyev, R; Mehlhase, S; Mehta, A; Meier, K; Meirose, B; Melamed-Katz, A; Mellado Garcia, B R; Meng, Z; Menke, S; Meoni, E; Merkl, D; Mermod, P; Merola, L; Meroni, C; Merritt, F S; Messina, A M; Messmer, I; Metcalfe, J; Mete, A S; Meyer, J-P; Meyer, J; Meyer, T C; Meyer, W T; Miao, J; Micu, L; Middleton, R P; Migas, S; Mijovic, L; Mikenberg, G; Mikuz, M; Miller, D W; Mills, W J; Mills, C M; Milov, A; Milstead, D A; Minaenko, A A; Miñano, M; Minashvili, I A; Mincer, A I; Mindur, B; Mineev, M; Mir, L M; Mirabelli, G; Misawa, S; Miscetti, S; Misiejuk, A; Mitrevski, J; Mitsou, V A; Miyagawa, P S; Mjörnmark, J U; Mladenov, D; Moa, T; Mockett, P; Moed, S; Moeller, V; Mönig, K; Möser, N; Mohn, B; Mohr, W; Mohrdieck-Möck, S; Moles-Valls, R; Molina-Perez, J; Moloney, G; Monk, J; Monnier, E; Montesano, S; Monticelli, F; Moore, R W; Mora-Herrera, C; Moraes, A; Morais, A; Morel, J; Morello, G; Moreno, D; Moreno Llácer, M; Morettini, P; Morii, M; Morley, A K; Mornacchi, G; Morozov, S V; Morris, J D; Moser, H G; Mosidze, M; Moss, J; Mount, R; Mountricha, E; Mouraviev, S V; Moyse, E J W; Mudrinic, M; Mueller, F; Mueller, J; Mueller, K; Müller, T A; Muenstermann, D; Muir, A; Murillo Garcia, R; Murray, W J; Mussche, I; Musto, E; Myagkov, A G; Myska, M; Nadal, J; Nagai, K; Nagano, K; Nagasaka, Y; Nairz, A M; Nakamura, K; Nakano, I; Nakatsuka, H; Nanava, G; Napier, A; Nash, M; Nation, N R; Nattermann, T; Naumann, T; Navarro, G; Nderitu, S K; Neal, H A; Nebot, E; Nechaeva, P; Negri, A; Negri, G; Nelson, A; Nelson, T K; Nemecek, S; Nemethy, P; Nepomuceno, A A; Nessi, M; Neubauer, M S; Neusiedl, A; Neves, R N; Nevski, P; Newcomer, F M; Nicholson, C; Nickerson, R B; Nicolaidou, R; Nicolas, L; Nicoletti, G; Niedercorn, F; Nielsen, J; Nikiforov, A; Nikolaev, K; Nikolic-Audit, I; Nikolopoulos, K; Nilsen, H; Nilsson, P; Nisati, A; Nishiyama, T; Nisius, R; Nodulman, L; Nomachi, M; Nomidis, I; Nomoto, H; Nordberg, M; Nordkvist, B; Notz, D; Novakova, J; Nozaki, M; Nozicka, M; Nugent, I M; Nuncio-Quiroz, A-E; Nunes Hanninger, G; Nunnemann, T; Nurse, E; O'Neil, D C; O'Shea, V; Oakham, F G; Oberlack, H; Ochi, A; Oda, S; Odaka, S; Odier, J; Odino, G A; Ogren, H; Oh, S H; Ohm, C C; Ohshima, T; Ohshita, H; Ohsugi, T; Okada, S; Okawa, H; Okumura, Y; Olcese, M; Olchevski, A G; Oliveira, M; Oliveira Damazio, D; Oliver, J; Oliver Garcia, E; Olivito, D; Olszewski, A; Olszowska, J; Omachi, C; Onofre, A; Onyisi, P U E; Oram, C J; Ordonez, G; Oreglia, M J; Oren, Y; Orestano, D; Orlov, I; Oropeza Barrera, C; Orr, R S; Ortega, E O; Osculati, B; Osuna, C; Otec, R; Ottersbach, J P; Ould-Saada, F; Ouraou, A; Ouyang, Q; Owen, M; Owen, S; Ozcan, V E; Ozone, K; Ozturk, N; Pacheco Pages, A; Padhi, S; Padilla Aranda, C; Paganis, E; Pahl, C; Paige, F; Pajchel, K; Pal, A; Palestini, S; Pallin, D; Palma, A; Palmer, J D; Pan, Y B; Panagiotopoulou, E; Panes, B; Panikashvili, N; Panitkin, S; Pantea, D; Panuskova, M; Paolone, V; Papadopoulou, Th D; Park, S J; Park, W; Parker, M A; Parker, S I; Parodi, F; Parsons, J A; Parzefall, U; Pasqualucci, E; Passardi, G; Passeri, A; Pastore, F; Pastore, Fr; Pásztor, G; Pataraia, S; Pater, J R; Patricelli, S; Patwa, A; Pauly, T; Peak, L S; Pecsy, M; Pedraza Morales, M I; Peleganchuk, S V; Peng, H; Penson, A; Penwell, J; Perantoni, M; Perez, K; Perez Codina, E; Pérez García-Estañ, M T; Perez Reale, V; Perini, L; Pernegger, H; Perrino, R; Perrodo, P; Persembe, S; Perus, P; Peshekhonov, V D; Petersen, B A; Petersen, J; Petersen, T C; Petit, E; Petridou, C; Petrolo, E; Petrucci, F; Petschull, D; Petteni, M; Pezoa, R; Pfeifer, B; Phan, A; Phillips, A W; Piacquadio, G; Piccinini, M; Piegaia, R; Pilcher, J E; Pilkington, A D; Pina, J; Pinamonti, M; Pinfold, J L; Ping, J; Pinto, B; Pirotte, O; Pizio, C; Placakyte, R; Plamondon, M; Plano, W G; Pleier, M-A; Poblaguev, A; Poddar, S; Podlyski, F; Poffenberger, P; Poggioli, L; Pohl, M; Polci, F; Polesello, G; Policicchio, A; Polini, A; Poll, J; Polychronakos, V; Pomarede, D M; Pomeroy, D; Pommès, K; Pontecorvo, L; Pope, B G; Popovic, D S; Poppleton, A; Popule, J; Portell Bueso, X; Porter, R; Pospelov, G E; Pospichal, P; Pospisil, S; Potekhin, M; Potrap, I N; Potter, C J; Potter, C T; Potter, K P; Poulard, G; Poveda, J; Prabhu, R; Pralavorio, P; Prasad, S; Pravahan, R; Preda, T; Pretzl, K; Pribyl, L; Price, D; Price, L E; Prichard, P M; Prieur, D; Primavera, M; Prokofiev, K; Prokoshin, F; Protopopescu, S; Proudfoot, J; Prudent, X; Przysiezniak, H; Psoroulas, S; Ptacek, E; Puigdengoles, C; Purdham, J; Purohit, M; Puzo, P; Pylypchenko, Y; Qi, M; Qian, J; Qian, W; Qian, Z; Qin, Z; Qing, D; Quadt, A; Quarrie, D R; Quayle, W B; Quinonez, F; Raas, M; Radeka, V; Radescu, V; Radics, B; Rador, T; Ragusa, F; Rahal, G; Rahimi, A M; Rahm, D; Rajagopalan, S; Rammes, M; Ratoff, P N; Rauscher, F; Rauter, E; Raymond, M; Read, A L; Rebuzzi, D M; Redelbach, A; Redlinger, G; Reece, R; Reeves, K; Reinherz-Aronis, E; Reinsch, A; Reisinger, I; Reljic, D; Rembser, C; Ren, Z L; Renkel, P; Rescia, S; Rescigno, M; Resconi, S; Resende, B; Reznicek, P; Rezvani, R; Richards, A; Richards, R A; Richter, D; Richter, R; Richter-Was, E; Ridel, M; Rieke, S; Rijpstra, M; Rijssenbeek, M; Rimoldi, A; Rinaldi, L; Rios, R R; Riu, I; Rivoltella, G; Rizatdinova, F; Rizvi, E R; Roa-Romero, D A; Robertson, S H; Robichaud-Veronneau, A; Robinson, D; Robinson, M; Robson, A; Rocha de Lima, J G; Roda, C; Rodriguez, D; Rodriguez Garcia, Y; Roe, S; Røhne, O; Rojo, V; Rolli, S; Romaniouk, A; Romanov, V M; Romeo, G; Romero-Maltrana, D; Roos, L; Ros, E; Rosati, S; Rosenbaum, G A; Rosenberg, E I; Rosselet, L; Rossi, L P; Rotaru, M; Rothberg, J; Rottländer, I; Rousseau, D; Royon, C R; Rozanov, A; Rozen, Y; Ruan, X; Ruckert, B; Ruckstuhl, N; Rud, V I; Rudolph, G; Rühr, F; Ruggieri, F; Ruiz-Martinez, A; Rumyantsev, L; Rusakovich, N A; Rutherfoord, J P; Ruwiedel, C; Ruzicka, P; Ryabov, Y F; Ryadovikov, V; Ryan, P; Rybkin, G; Rzaeva, S; Saavedra, A F; Sadrozinski, H F-W; Sadykov, R; Sakamoto, H; Salamanna, G; Salamon, A; Saleem, M; Salihagic, D; Salnikov, A; Salt, J; Salvachua-Ferrando, B M; Salvatore, D; Salvatore, F; Salvucci, A; Salzburger, A; Sampsonidis, D; Samset, B H; Sanchis Lozano, M A; Sandaker, H; Sander, H G; Sanders, M P; Sandhoff, M; Sandstroem, R; Sandvoss, S; Sankey, D P C; Sanny, B; Sansoni, A; Santamarina Rios, C; Santi, L; Santoni, C; Santonico, R; Santos, D; Santos, J; Saraiva, J G; Sarangi, T; Sarkisyan-Grinbaum, E; Sarri, F; Sasaki, O; Sasaki, T; Sasao, N; Satsounkevitch, I; Sauvage, G; Savard, P; Savine, A Y; Savinov, V; Sawyer, L; Saxon, D H; Says, L P; Sbarra, C; Sbrizzi, A; Scannicchio, D A; Schaarschmidt, J; Schacht, P; Schäfer, U; Schaetzel, S; Schaffer, A C; Schaile, D; Schamberger, R D; Schamov, A G; Schegelsky, V A; Scheirich, D; Schernau, M; Scherzer, M I; Schiavi, C; Schieck, J; Schioppa, M; Schlenker, S; Schlereth, J L; Schmid, P; Schmidt, M P; Schmieden, K; Schmitt, C; Schmitz, M; Schott, M; Schouten, D; Schovancova, J; Schram, M; Schreiner, A; Schroeder, C; Schroer, N; Schroers, M; Schuler, G; Schultes, J; Schultz-Coulon, H-C; Schumacher, J; Schumacher, M; Schumm, B A; Schune, Ph; Schwanenberger, C; Schwartzman, A; Schwemling, Ph; Schwienhorst, R; Schwierz, R; Schwindling, J; Scott, W G; Searcy, J; Sedykh, E; Segura, E; Seidel, S C; Seiden, A; Seifert, F; Seixas, J M; Sekhniaidze, G; Seliverstov, D M; Sellden, B; Seman, M; Semprini-Cesari, N; Serfon, C; Serin, L; Seuster, R; Severini, H; Sevior, M E; Sfyrla, A; Shamim, M; Shan, L Y; Shank, J T; Shao, Q T; Shapiro, M; Shatalov, P B; Shaver, L; Shaw, C; Shaw, K; Sherman, D; Sherwood, P; Shibata, A; Shimojima, M; Shin, T; Shmeleva, A; Shochet, M J; Shupe, M A; Sicho, P; Sidoti, A; Siebel, A; Siegert, F; Siegrist, J; Sijacki, Dj; Silbert, O; Silva, J; Silver, Y; Silverstein, D; Silverstein, S B; Simak, V; Simic, Lj; Simion, S; Simmons, B; Simonyan, M; Sinervo, P; Sinev, N B; Sipica, V; Siragusa, G; Sisakyan, A N; Sivoklokov, S Yu; Sjoelin, J; Sjursen, T B; Skubic, P; Skvorodnev, N; Slater, M; Slavicek, T; Sliwa, K; Sloper, J; Sluka, T; Smakhtin, V; Smirnov, S Yu; Smirnov, Y; Smirnova, L N; Smirnova, O; Smith, B C; Smith, D; Smith, K M; Smizanska, M; Smolek, K; Snesarev, A A; Snow, S W; Snow, J; Snuverink, J; Snyder, S; Soares, M; Sobie, R; Sodomka, J; Soffer, A; Solans, C A; Solar, M; Solfaroli-Camillocci, E; Solodkov, A A; Solovyanov, O V; Soluk, R; Sondericker, J; Sopko, V; Sopko, B; Sosebee, M; Sosnovtsev, V V; Sospedra-Suay, L; Soukharev, A; Spagnolo, S; Spanò, F; Speckmayer, P; Spencer, E; Spighi, R; Spigo, G; Spila, F; Spiwoks, R; Spousta, M; Spreitzer, T; Spurlock, B; St Denis, R D; Stahl, T; Stamen, R; Stancu, S N; Stanecka, E; Stanek, R W; Stanescu, C; Stapnes, S; Starchenko, E A; Stark, J; Staroba, P; Starovoitov, P; Stastny, J; Staude, A; Stavina, P; Stavropoulos, G; Steinbach, P; Steinberg, P; Stekl, I; Stelzer, B; Stelzer, H J; Stelzer-Chilton, O; Stenzel, H; Stevenson, K; Stewart, G; Stockton, M C; Stoerig, K; Stoicea, G; Stonjek, S; Strachota, P; Stradling, A; Straessner, A; Strandberg, J; Strandberg, S; Strandlie, A; Strauss, M; Strizenec, P; Ströhmer, R; Strom, D M; Strong, J A; Stroynowski, R; Strube, J; Stugu, B; Stumer, I; Soh, D A; Su, D; Suchkov, S I; Sugaya, Y; Sugimoto, T; Suhr, C; Suk, M; Sulin, V V; Sultansoy, S; Sumida, T; Sun, X; Sundermann, J E; Suruliz, K; Sushkov, S; Susinno, G; Sutton, M R; Suzuki, T; Suzuki, Y; Sviridov, Yu M; Sykora, I; Sykora, T; Szymocha, T; Sánchez, J; Ta, D; Tackmann, K; Taffard, A; Tafirout, R; Taga, A; Takahashi, Y; Takai, H; Takashima, R; Takeda, H; Takeshita, T; Talby, M; Talyshev, A; Tamsett, M C; Tanaka, J; Tanaka, R; Tanaka, S; Tanaka, S; Tappern, G P; Tapprogge, S; Tardif, D; Tarem, S; Tarrade, F; Tartarelli, G F; Tas, P; Tasevsky, M; Tassi, E; Taylor, C; Taylor, F E; Taylor, G N; Taylor, R P; Taylor, W; Teixeira-Dias, P; Ten Kate, H; Teng, P K; Terada, S; Terashi, K; Terron, J; Terwort, M; Testa, M; Teuscher, R J; Tevlin, C M; Thadome, J; Thananuwong, R; Thioye, M; Thoma, S; Thomas, J P; Thomas, T L; Thompson, E N; Thompson, P D; Thompson, P D; Thompson, R J; Thompson, A S; Thomson, E; Thun, R P; Tic, T; Tikhomirov, V O; Tikhonov, Y A; Timmermans, C J W P; Tipton, P; Tique-Aires-Viegas, F J; Tisserant, S; Tobias, J; Toczek, B; Todorov, T; Todorova-Nova, S; Toggerson, B; Tojo, J; Tokár, S; Tokushuku, K; Tollefson, K; Tomasek, L; Tomasek, M; Tomasz, F; Tomoto, M; Tompkins, D; Tompkins, L; Toms, K; Tong, G; Tonoyan, A; Topfel, C; Topilin, N D; Torrence, E; Torró Pastor, E; Toth, J; Touchard, F; Tovey, D R; Tovey, S N; Trefzger, T; Tremblet, L; Tricoli, A; Trigger, I M; Trincaz-Duvoid, S; Trinh, T N; Tripiana, M F; Triplett, N; Trivedi, A; Trocmé, B; Troncon, C; Trzupek, A; Tsarouchas, C; Tseng, J C-L; Tsiafis, I; Tsiakiris, M; Tsiareshka, P V; Tsionou, D; Tsipolitis, G; Tsiskaridze, V; Tskhadadze, E G; Tsukerman, I I; Tsulaia, V; Tsung, J-W; Tsuno, S; Tsybychev, D; Turala, M; Turecek, D; Turk Cakir, I; Turlay, E; Tuts, P M; Twomey, M S; Tylmad, M; Tyndel, M; Tzanakos, G; Uchida, K; Ueda, I; Uhlenbrock, M; Uhrmacher, M; Ukegawa, F; Unal, G; Underwood, D G; Undrus, A; Unel, G; Unno, Y; Urbaniec, D; Urkovsky, E; Urquijo, P; Urrejola, P; Usai, G; Uslenghi, M; Vacavant, L; Vacek, V; Vachon, B; Vahsen, S; Valenta, J; Valente, P; Valentinetti, S; Valkar, S; Valladolid Gallego, E; Vallecorsa, S; Valls Ferrer, J A; Van Berg, R; van der Graaf, H; van der Kraaij, E; van der Poel, E; Van Der Ster, D; van Eldik, N; van Gemmeren, P; van Kesteren, Z; van Vulpen, I; Vandelli, W; Vandoni, G; Vaniachine, A; Vankov, P; Vannucci, F; Varela Rodriguez, F; Vari, R; Varnes, E W; Varouchas, D; Vartapetian, A; Varvell, K E; Vasilyeva, L; Vassilakopoulos, V I; Vazeille, F; Vegni, G; Veillet, J J; Vellidis, C; Veloso, F; Veness, R; Veneziano, S; Ventura, A; Ventura, D; Venturi, M; Venturi, N; Vercesi, V; Verducci, M; Verkerke, W; Vermeulen, J C; Vetterli, M C; Vichou, I; Vickey, T; Viehhauser, G H A; Villa, M; Villani, E G; Villaplana Perez, M; Villate, J; Vilucchi, E; Vincter, M G; Vinek, E; Vinogradov, V B; Viret, S; Virzi, J; Vitale, A; Vitells, O V; Vivarelli, I; Vives Vaques, F; Vlachos, S; Vlasak, M; Vlasov, N; Vogt, H; Vokac, P; Volpi, M; Volpini, G; von der Schmitt, H; von Loeben, J; von Radziewski, H; von Toerne, E; Vorobel, V; Vorobiev, A P; Vorwerk, V; Vos, M; Voss, R; Voss, T T; Vossebeld, J H; Vranjes, N; Vranjes Milosavljevic, M; Vrba, V; Vreeswijk, M; Vu Anh, T; Vudragovic, D; Vuillermet, R; Vukotic, I; Wagner, P; Wahlen, H; Walbersloh, J; Walder, J; Walker, R; Walkowiak, W; Wall, R; Wang, C; Wang, H; Wang, J; Wang, J C; Wang, S M; Ward, C P; Warsinsky, M; Wastie, R; Watkins, P M; Watson, A T; Watson, M F; Watts, G; Watts, S; Waugh, A T; Waugh, B M; Webel, M; Weber, J; Weber, M D; Weber, M; Weber, M S; Weber, P; Weidberg, A R; Weingarten, J; Weiser, C; Wellenstein, H; Wells, P S; Wen, M; Wenaus, T; Wendler, S; Wengler, T; Wenig, S; Wermes, N; Werner, M; Werner, P; Werth, M; Werthenbach, U; Wessels, M; Whalen, K; Wheeler-Ellis, S J; Whitaker, S P; White, A; White, M J; White, S; Whiteson, D; Whittington, D; Wicek, F; Wicke, D; Wickens, F J; Wiedenmann, W; Wielers, M; Wienemann, P; Wiglesworth, C; Wiik, L A M; Wildauer, A; Wildt, M A; Wilhelm, I; Wilkens, H G; Williams, E; Williams, H H; Willis, W; Willocq, S; Wilson, J A; Wilson, M G; Wilson, A; Wingerter-Seez, I; Winklmeier, F; Wittgen, M; Wolter, M W; Wolters, H; Wosiek, B K; Wotschack, J; Woudstra, M J; Wraight, K; Wright, C; Wright, D; Wrona, B; Wu, S L; Wu, X; Wulf, E; Xella, S; Xie, S; Xie, Y; Xu, D; Xu, N; Yamada, M; Yamamoto, A; Yamamoto, S; Yamamura, T; Yamanaka, K; Yamaoka, J; Yamazaki, T; Yamazaki, Y; Yan, Z; Yang, H; Yang, U K; Yang, Y; Yang, Z; Yao, W-M; Yao, Y; Yasu, Y; Ye, J; Ye, S; Yilmaz, M; Yoosoofmiya, R; Yorita, K; Yoshida, R; Young, C; Youssef, S P; Yu, D; Yu, J; Yu, M; Yu, X; Yuan, J; Yuan, L; Yurkewicz, A; Zaidan, R; Zaitsev, A M; Zajacova, Z; Zambrano, V; Zanello, L; Zarzhitsky, P; Zaytsev, A; Zeitnitz, C; Zeller, M; Zema, P F; Zemla, A; Zendler, C; Zenin, O; Zenis, T; Zenonos, Z; Zenz, S; Zerwas, D; Zevi della Porta, G; Zhan, Z; Zhang, H; Zhang, J; Zhang, Q; Zhang, X; Zhao, L; Zhao, T; Zhao, Z; Zhemchugov, A; Zheng, S; Zhong, J; Zhou, B; Zhou, N; Zhou, Y; Zhu, C G; Zhu, H; Zhu, Y; Zhuang, X; Zhuravlov, V; Zilka, B; Zimmermann, R; Zimmermann, S; Zimmermann, S; Ziolkowski, M; Zitoun, R; Zivkovic, L; Zmouchko, V V; Zobernig, G; Zoccoli, A; zur Nedden, M; Zutshi, V


    The ATLAS liquid argon calorimeter has been operating continuously since August 2006. At this time, only part of the calorimeter was readout, but since the beginning of 2008, all calorimeter cells have been connected to the ATLAS readout system in preparation for LHC collisions. This paper gives an overview of the liquid argon calorimeter performance measured in situ with random triggers, calibration data, cosmic muons, and LHC beam splash events. Results on the detector operation, timing performance, electronics noise, and gain stability are presented. High energy deposits from radiative cosmic muons and beam splash events allow to check the intrinsic constant term of the energy resolution. The uniformity of the electromagnetic barrel calorimeter response along eta (averaged over phi) is measured at the percent level using minimum ionizing cosmic muons. Finally, studies of electromagnetic showers from radiative muons have been used to cross-check the Monte Carlo simulation. The performance results obtained u...

  4. Treatment of facial vascular lesions with an argon laser (United States)

    Szymanczyk, Jacek; Golebiowska, Aleksandra; Michalska, I.


    Two-hundred-ninety-six patients with various vascular lesions of the face have been treated with argon laser LAK-1 in the Department of Dermatology Warsaw Medical Academy since April 1992. The diagnosis of the treated lesions was port-wine stains, multiple telangiectasiae and small, most often induced by trauma hemangioma cavernosum of the lip. Best results were achieved in the patients with small hemangiomas cavernosum of the lip and multiple telangiectasiae on the face. Cure rate in this group was 100%. In 112 port-wine stain cases fading of 50 - 75% comparing with the adjacent skin was achieved. With stress, the argon laser therapy is a method of choice for the treatment of hemangioma cavernosum, port-wine stains and multiple teleagiectasiae of the face.

  5. Detection of Cherenkov light emission in liquid argon

    Energy Technology Data Exchange (ETDEWEB)

    Antonello, M.; Arneodo, F.; Badertscher, A.; Baiboussinov, B.; Baldo Ceolin, M.; Battistoni, G.; Bekman, B.; Benetti, P.; Bernardini, E.; Bischofberger, M.; Borio di Tigliole, A.; Brunetti, R.; Bueno, A.; Calligarich, E.; Campanelli, M.; Carpanese, C.; Cavalli, D.; Cavanna, F. E-mail:; Cennini, P.; Centro, S.; Cesana, A.; Chen, C.; Chen, D.; Chen, D.B.; Chen, Y.; Cieslik, C.; Cline, D.; Dai, Z.; De Vecchi, C.; Dabrowska, A.; Dolfini, R.; Felcini, M.; Ferrari, A.; Ferri, F.; Ge, Y.; Gibin, D.; Gigli Berzolari, A.; Gil-Botella, I.; Graczyk, K.; Grandi, L.; Guglielmi, A.; He, K.; Holeczek, J.; Huang, X.; Juszczak, C.; Kielczewska, D.; Kisiel, J.; Kozlowski, T.; Laffranchi, M.; Lagoda, J.; Li, Z.; Lu, F.; Ma, J.; Markiewicz, M.; Matthey, C.; Mauri, F.; Mazza, D.; Meng, G.; Messina, M.; Montanari, C.; Muraro, S.; Navas-Concha, S.; Nurzia, G.; Otwinowski, S.; Ouyang, Q.; Palamara, O.; Pascoli, D.; Periale, L.; Piano Mortari, G.B.; Piazzoli, A.; Picchi, P.; Pietropaolo, F.; Polchlopek, W.; Rancati, T.; Rappoldi, A.; Raselli, G.L.; Rico, J.; Rondio, E.; Rossella, M.; Rubbia, A.; Rubbia, C.; Sala, P.; Scannicchio, D.; Segreto, E.; Seo, Y.; Sergiampietri, F.; Sobczyk, J.; Stepaniak, J.; Szarska, M.; Szeptycka, M.; Terrani, M.; Ventura, S.; Vignoli, C.; Wang, H.; Woo, J.; Xu, G.; Xu, Z.; Zalewska, A.; Zalipska, J.; Zhang, C.; Zhang, Q.; Zhen, S.; Zipper, W


    Detection of Cherenkov light emission in liquid argon has been obtained with an ICARUS prototype, during a dedicated test run at the Gran Sasso Laboratory external facility. Ionizing tracks from cosmic ray muons crossing the detector active volume have been collected in coincidence with visible light signals from a photo-multiplier (PMT) immersed in liquid argon. A 3D reconstruction of the tracks has been performed exploiting the ICARUS imaging capability. The angular distributions of the tracks triggered by the PMT signals show an evident directionality. By means of a detailed Monte Carlo simulation we show that the geometrical characteristics of the events are compatible with the hypothesis of Cherenkov light emission as the main source of the PMT signals.

  6. Defects in III-nitride microdisk cavities (United States)

    Ren, C. X.; Puchtler, T. J.; Zhu, T.; Griffiths, J. T.; Oliver, R. A.


    Nitride microcavities offer an exceptional platform for the investigation of light–matter interactions as well as the development of devices such as high efficiency light emitting diodes (LEDs) and low-threshold nanolasers. Microdisk geometries in particular are attractive for low-threshold lasing applications due to their ability to support high finesse whispering gallery modes (WGMs) and small modal volumes. In this article we review the effect of defects on the properties of nitride microdisk cavities fabricated using photoelectrochemical etching of an InGaN sacrificial superlattice (SSL). Threading dislocations originating from either the original GaN pseudosubstrate are shown to hinder the undercutting of microdisk cavities during the photoelectric chemical etching process resulting in whiskers of unetched material on the underside of microdisks. The unetched whiskers provide a pathway for light to escape, reducing microdisk Q-factor if located in the region occupied by the WGMs. Additionally, dislocations can affect the spectral stability of quantum dot emitters, thus hindering their effective integration in microdisk cavities. Though dislocations are clearly undesirable, the limiting factor on nitride microdisk Q-factor is expected to be internal absorption, indicating that the further optimisation of nitride microdisk cavities must incorporate both the elimination of dislocations and careful tailoring of the active region emission wavelength and background doping levels.

  7. Gallium Nitride Crystals: Novel Supercapacitor Electrode Materials. (United States)

    Wang, Shouzhi; Zhang, Lei; Sun, Changlong; Shao, Yongliang; Wu, Yongzhong; Lv, Jiaxin; Hao, Xiaopeng


    A type of single-crystal gallium nitride mesoporous membrane is fabricated and its supercapacitor properties are demonstrated for the first time. The supercapacitors exhibit high-rate capability, stable cycling life at high rates, and ultrahigh power density. This study may expand the range of crystals as high-performance electrode materials in the field of energy storage.

  8. Local residual stress measurements on nitride layers

    NARCIS (Netherlands)

    Mansilla, C.; Ocelik, V.; De Hosson, J. Th. M.


    In this work, local stresses in different nitrided maraging steel samples of high practical interest for industrial applications were studied through the so-called micro-slit milling method using a focused ion beam. The nitrogen concentration profiles were acquired by glow discharge optical emission

  9. Dynamic Characterization of Silicon Nitride Cantilevers

    NARCIS (Netherlands)

    Babaei Gavan, K.


    This thesis describes a series of experiments on dynamical characterization of silicon nitride cantilevers. These devices play an important role in micro-and nanoelectromechanical systems (MEMS and NEMS). They consist of a mechanical part, a sensor or actuator, and an electronic part for readout and

  10. Powdered Hexagonal Boron Nitride Reducing Nanoscale Wear (United States)

    Chkhartishvili, L.; Matcharashvili, T.; Esiava, R.; Tsagareishvili, O.; Gabunia, D.; Margiev, B.; Gachechiladze, A.


    A morphology model is suggested for nano-powdered hexagonal boron nitride that can serve as an effective solid additive to liquid lubricants. It allows to estimate the specific surface, that is a hard-to-measure parameter, based on average size of powder particles. The model can be used also to control nanoscale wear processes.

  11. Thermal decomposition of lanthanum(III) butyrate in argon atmosphere

    DEFF Research Database (Denmark)

    Grivel, Jean-Claude; Yue, Zhao; Xiao, Tang;


    The thermal decomposition of La(C3H7CO2)3·xH2O (x≈0.82) was studied in argon during heating at 5K/min. After the loss of bound H2O, the anhydrous butyrate presents at 135°C a phase transition to a mesophase, which turns to an isotropic liquid at 180°C. The decomposition of the anhydrous butyrate ...

  12. Liquid Argon Hadronic EndCap Production Database

    CERN Document Server

    Oram, C J; Wielers, M


    This document describes the contents of the Liquid Argon Hadronic EndCap (HEC) Production Database. At the time of the PRR (Production Readiness Review), the groups responsible for the production of the LAr HEC components and modules were required to provide a detailed plan as to what data should be stored in the production database and how the data should be accessed, displayed and queried in all reasonable foreseeable circumstances. This document describes the final database.

  13. Monte Carlo Simulation of Argon in Nano-Space

    Institute of Scientific and Technical Information of China (English)

    CHEN Min; YANG Chun; GUO Zeng-Yuan


    Monte Carlo simulations are performed to investigate the thermodynamic properties of argon confined in nano-scale cubes constructed of graphite walls. A remarkable depression of the system pressures is observed. The simulations reveal that the length-scale of the cube, the magnitude of the interaction between the fluid and the graphite wall and the density of the fluid exhibit reasonable effects on the thermodynamic property shifts of the luid.

  14. Measurement of scintillation efficiency for nuclear recoils in liquid argon

    CERN Document Server

    Gastler, D; Hime, A; Stonehill, L C; Seibert, S; Klein, J; Lippincott, W H; McKinsey, D N; Nikkel, J A


    The scintillation light yield of liquid argon from nuclear recoils relative to electronic recoils has been measured as a function of recoil energy from 10 keVr up to 250 keVr. The scintillation efficiency, defined as the ratio of the nuclear recoil scintillation response to the electronic recoil response, is 0.25 \\pm 0.02 + 0.01(correlated) above 20 keVr.

  15. Argon laser photocoagulation of cyclodialysis clefts after cataract surgery

    Energy Technology Data Exchange (ETDEWEB)

    Bauer, B. [Univ. of Lund, Dept. of Ophthalmology, Lund (Sweden)


    Three patients with cyclodialysis clefts, hypotony and hypotonic retinopathy subsequent to cataract surgery were treated with argon laser photocoagulation. The hypotony was reversed in each patient and their visual acuity was normalized. Laser photocoagulation is a noninvasive treatment that can be repeated easily and safely. The complications of the treatment are minor. A hypertensive episode commonly occurs in the early postoperative period. (au) 8 refs.

  16. Investigation of Non-Equilibrium Argon and Hydrogen Plasmas. (United States)

    Braun, Christopher Gifford


    Theoretical and experimental investigations are made into non-equilibrium argon and hydrogen partially -ionized plasmas characteristic of glow discharge devices such as thyratrons and discharge tubes. For an argon plasma, the development and use of a collisional-radiative, steady -state, three-energy-level model is presented and experimental measurements on pulsed argon plasmas are briefly mentioned. Two different theoretical argon plasma models are discussed; the first is numerically solved using a non-Maxwellian electron distribution function, while the second is solved analytically, including atom-atom inelastic collisions, assuming Maxwellian electron and atom distribution functions. For a hydrogen plasma, experimental measurements using fluorescence and laser-induced fluorescence have been made in a modified hydrogen thyratron over a wide current density range (from 100 to 8,000 A/cm('2)) for the atomic hydrogen population densities n = 2,3,4. A pronounced rise in the atomic hydrogen excited state populations is observed after the end of the current pulse. A new method to measure the time-resolved electron density has been developed and results are presented. A time-dependent model for atomic hydrogen plasmas typical of a thyratron has been constructed, and preliminary results are shown. This model includes ten atomic energy levels (n = 1 to n = 9 and the continuum), takes into account energy balance with an externally supplied current density and assumes a Maxwellian electron distribution function. Implications of these measurements and theoretical analysis upon the operation of thyratrons are discussed. (Copies available exclusively from Micrographics Department, Doheny Library, University of Southern California, Los Angeles, CA 90089 -0182.).

  17. Metal clusters on supported argon layers; Metallcluster auf dielektrischen Substraten

    Energy Technology Data Exchange (ETDEWEB)

    Faber, Bernhard


    The deposition of small sodium clusters on supported Ar(001)-surfaces is simulated. Theoretical description is achieved by a hierarchical model consisting of time-dependent DFT and molecular dynamics. The valence electrons of the sodium atoms are considered by Kohn-Sham-Scheme with self interaction correction. The interaction of argon atoms and sodium ions is described by atom-atom potentials whereas the coupling to the QM electrons is done by local pseudo-potentials. A decisive part of the model is the dynamical polarizability of the rare-gas atoms. The optional metal support is considered by the method of image charges. The influence of the forces caused by image charges and the influence of the number of argon monolayers on structure, optical response and deposition dynamics of Na{sub 6} and Na{sub 8} is investigated. There is very little influence on cluster structure and only a small shift of the cluster perpendicular to the surface. Concerning optical response the position of the Mie plasmon peak stays robust whereas the details of spectral fragmentation react very sensitively to changes. The forces caused by image charges of the metal support play only a little role with the dynamics of deposition while the thickness of the argon surface strongly influences the dissipation. (orig.)

  18. Cryogenic Tests of the Atlas Liquid Argon Calorimeter

    CERN Document Server

    Fabre, C; Chalifour, M; Gonidec, A; Passardi, Giorgio


    The ATLAS liquid argon calorimeter consists of the barrel and two end-cap detectors housed in three independent cryostats filled with a total volume of 78 m3 of liquid argon. During cool-down the temperature differences in the composite structure of the detectors must be kept within strict limits to avoid excessive mechanical stresses and relative displacements. During normal operation the formation of gas bubbles, which are detrimental to the functioning of the detector, must be prevented and temperature gradients of less than 0.7 K across the argon bath are mandatory due to the temperature dependence of the energy measurements. Between April 2004 and May 2005 the barrel (120 t) and one end-cap (219 t) underwent qualification tests at the operating temperature of 87.3 K using a dedicated test facility at ground level. These tests provided a validation of the cooling methods to be adopted in the final underground configuration. In total 6.9 GJ and 15.7 GJ were extracted from the calorimeters and a temperature...

  19. Isotopic fractionation of argon during stepwise release from shungite (United States)

    Rison, W.


    It is noted that in previous attempts to determine the Ar-40/Ar-36 ratio in the ancient atmosphere, the only direct measurement yielding a value below the atmospheric value of today is for argon released at low temperatures from a pre-Cambrian shungite. In the present work, a low value for Ar-40/Ar-36 in gas released from a type I shungite at low temperatures is confirmed. Attention is given to a study of the accompanying Ar-38/Ar-36 ratios and the enhanced ratio of Ar-40/Ar-36 for the fractions released at high temperatures which shows that the effect observed is a result of the stepwise heating and the argon diffusion mobilized thereby. It is suggested that the low Ar-40/Ar-36 obtained in the past is from the same source rather than reflecting the isotropic composition of the pre-Cambrian atmosphere, and that the type I shungite may exhibit simple volume diffusion over macroscopic dimensions as glasses do. It is concluded that if this is so, the diffusion parameters obtained from the data would imply rapid exchange with the atmosphere for any argon initially trapped in the veins of the material.

  20. Space-charge effects in liquid argon ionization chambers (United States)

    Rutherfoord, J. P.; Walker, R. B.


    We have uniformly irradiated liquid argon ionization chambers with betas from high-activity 90Sr sources. The radiation environment is similar to that in the liquid argon calorimeters which are part of the ATLAS detector installed at CERN's Large Hadron Collider (LHC). We measured the resulting ionization current over a wide range of applied potential for two different source activities and for three different chamber gaps. These studies provide operating experience at exceptionally high ionization rates. In particular they indicate a stability at the 0.1% level for these calorimeters over years of operation at the full LHC luminosity when operated in the normal mode at an electric field E = 1.0 kV / mm. We can operate these chambers in the normal mode or in the space-charge limited regime and thereby determine the transition point between the two. This transition point is parameterized by a positive argon ion mobility of μ+ = 0.08 ± 0.02mm2 / V s at a temperature of 88.0±0.5 K and at a pressure of 1.02±0.02 bar. In the space-charge limited regime the ionization currents are degraded and show signs of instability. At the highest electric fields in our study (6.7 kV/mm) the ionization current is still slowly rising with increasing electric field.

  1. Free electron lifetime achievements in liquid Argon imaging TPC

    Energy Technology Data Exchange (ETDEWEB)

    Baibussinov, B; Ceolin, M Baldo; Centro, S; Cieslik, K; Farnese, C; Fava, A; Gibin, D; Guglielmi, A; Meng, G; Pietropaolo, F; Varanini, F; Ventura, S [INFN, Sezione di Padova via Marzolo 8, I-35131 Padova (Italy); Calligarich, E [INFN, Sezione di Pavia via Bassi 6, I-27100 Pavia (Italy); Rubbia, C, E-mail: Carlo.Rubbia@cern.c [Laboratori Nazionali del Gran Sasso dell' INFN I-67010 Assergi (Italy)


    A key feature for the success of the liquid Argon imaging TPC (LAr-TPC) technology is the industrial purification against electro-negative impurities, especially Oxygen and Nitrogen remnants, which have to be continuously kept at an exceptionally low level by filtering and recirculating liquid Argon. Improved purification techniques have been applied to a 120 liters LAr-TPC test facility in the INFN-LNL laboratory. Through-going muon tracks have been used to determine the free electron lifetime in liquid Argon against electro-negative impurities. The short path length here observed (30 cm) is compensated by the high accuracy in the observation of the specific ionization of cosmic ray muons at sea level as a function of the drift distance. A free electron lifetime of tau {approx} (21.4{sup +7.3}{sub -4.3}) ms, namely > 15.8 ms at 90% C.L. has been observed over several weeks under stable conditions, corresponding to a residual Oxygen equivalent of {approx} 15 ppt (part per trillion). At 500 V/cm, the free electron speed is 1.5 mm/mus. In a LAr-TPC a free electron lifetime in excess of 15 ms corresponds for instance to an attenuation of less than 20% after a drift path of 5 m, opening the way to the operation of the LAr-TPC with exceptionally long drift distances.

  2. Tin LPP plasma control in the argon cusp source (United States)

    McGeoch, Malcolm W.


    The argon cusp plasma has been introduced [1,2] for 500W class tin LPP exhaust control in view of its high power handling, predicted low tin back-scatter from a beam dump, and avoidance of hydrogen usage. The physics of tin ion control by a plasma is first discussed. Experimentally, cusp stability and exhaust disc geometry have previously been proved at full scale [2], the equivalent of 300W-500W usable EUV. Here we verify operation of the plasma barrier that maintains a high argon density next to the collector, for its protection, and a low density in the long path toward the intermediate focus, for efficiency. A pressure differential of 2Pa has been demonstrated in initial work. Other aspects of tin LPP plasma control by the cusp have now been demonstrated using tin ions from a low Hz 130mJ CO2 laser pulse onto a solid tin surface at the cusp center. Plasma is rejected at the design to match a specified exhaust power is discussed. In view of this work, argon cusp exhaust control appears to be very promising for 500W class tin LPP sources.

  3. Bacteria Inactivation Using DBD Plasma Jet in Atmospheric Pressure Argon

    Institute of Scientific and Technical Information of China (English)

    XU Guimin; ZHANG Guanjun; SHI Xingmin; MA Yue; WANG Ning; LI Yuan


    A coaxial dielectric barrier discharge plasma jet Was designed,which can be operated in atmospheric pressure argon under an intermediate frequency sinusoidal resonant power supply,and an atmospheric pressure glow-like discharge Was achieved.Two kinds of typical bacteria,i.e.,the Staphylococcus aureus(S.aurens)and Escherichia coil(E.coil),were employed to study the bacterial inactivation mechanism by means of the non-thermal plasma.The killing log value (KLV)of S.aureus reached up to 5.38 with a treatment time of 90 s and that of E.coil up to 5.36 with 60 s,respectively.According to the argon emission spectra of the plasma jet and the scanning electron microscope (SEM) images of the two bacteria before and after the plasma is concluded that the reactive species in the argon plasma played a major role in the bacterial inactivation,while the heat,electric field and UV photons had little effect.

  4. Readiness of the ATLAS liquid argon calorimeter for LHC collisions (United States)

    Aad, G.; Abbott, B.; Abdallah, J.; Abdelalim, A. A.; Abdesselam, A.; Abdinov, O.; Abi, B.; Abolins, M.; Abramowicz, H.; Abreu, H.; Acharya, B. S.; Adams, D. L.; Addy, T. N.; Adelman, J.; Adorisio, C.; Adragna, P.; Adye, T.; Aefsky, S.; Aguilar-Saavedra, J. A.; Aharrouche, M.; Ahlen, S. P.; Ahles, F.; Ahmad, A.; Ahmed, H.; Ahsan, M.; Aielli, G.; Akdogan, T.; Åkesson, T. P. A.; Akimoto, G.; Akimov, A. V.; Aktas, A.; Alam, M. S.; Alam, M. A.; Albert, J.; Albrand, S.; Aleksa, M.; Aleksandrov, I. N.; Alessandria, F.; Alexa, C.; Alexander, G.; Alexandre, G.; Alexopoulos, T.; Alhroob, M.; Aliev, M.; Alimonti, G.; Alison, J.; Aliyev, M.; Allport, P. P.; Allwood-Spiers, S. E.; Almond, J.; Aloisio, A.; Alon, R.; Alonso, A.; Alviggi, M. G.; Amako, K.; Amelung, C.; Ammosov, V. V.; Amorim, A.; Amorós, G.; Amram, N.; Anastopoulos, C.; Andeen, T.; Anders, C. F.; Anderson, K. J.; Andreazza, A.; Andrei, V.; Anduaga, X. S.; Angerami, A.; Anghinolfi, F.; Anjos, N.; Antonaki, A.; Antonelli, M.; Antonelli, S.; Antunovic, B.; Anulli, F.; Aoun, S.; Arabidze, G.; Aracena, I.; Arai, Y.; Arce, A. T. H.; Archambault, J. P.; Arfaoui, S.; Arguin, J.-F.; Argyropoulos, T.; Arik, E.; Arik, M.; Armbruster, A. J.; Arnaez, O.; Arnault, C.; Artamonov, A.; Arutinov, D.; Asai, M.; Asai, S.; Asfandiyarov, R.; Ask, S.; Åsman, B.; Asner, D.; Asquith, L.; Assamagan, K.; Astbury, A.; Astvatsatourov, A.; Atoian, G.; Auerbach, B.; Auge, E.; Augsten, K.; Aurousseau, M.; Austin, N.; Avolio, G.; Avramidou, R.; Axen, D.; Ay, C.; Azuelos, G.; Azuma, Y.; Baak, M. A.; Baccaglioni, G.; Bacci, C.; Bach, A.; Bachacou, H.; Bachas, K.; Backes, M.; Badescu, E.; Bagnaia, P.; Bai, Y.; Bailey, D. C.; Bain, T.; Baines, J. T.; Baker, O. K.; Baker, M. D.; Dos Santos Pedrosa, F. Baltasar; Banas, E.; Banerjee, P.; Banerjee, S.; Banfi, D.; Bangert, A.; Bansal, V.; Baranov, S. P.; Baranov, S.; Barashkou, A.; Barber, T.; Barberio, E. L.; Barberis, D.; Barbero, M.; Bardin, D. Y.; Barillari, T.; Barisonzi, M.; Barklow, T.; Barlow, N.; Barnett, B. M.; Barnett, R. M.; Baron, S.; Baroncelli, A.; Barr, A. J.; Barreiro, F.; Barreiro Guimarães da Costa, J.; Barrillon, P.; Barros, N.; Bartoldus, R.; Bartsch, D.; Bastos, J.; Bates, R. L.; Bathe, S.; Batkova, L.; Batley, J. R.; Battaglia, A.; Battistin, M.; Bauer, F.; Bawa, H. S.; Bazalova, M.; Beare, B.; Beau, T.; Beauchemin, P. H.; Beccherle, R.; Becerici, N.; Bechtle, P.; Beck, G. A.; Beck, H. P.; Beckingham, M.; Becks, K. H.; Bedajanek, I.; Beddall, A. J.; Beddall, A.; Bednár, P.; Bednyakov, V. A.; Bee, C.; Begel, M.; Behar Harpaz, S.; Behera, P. K.; Beimforde, M.; Belanger-Champagne, C.; Bell, P. J.; Bell, W. H.; Bella, G.; Bellagamba, L.; Bellina, F.; Bellomo, M.; Belloni, A.; Belotskiy, K.; Beltramello, O.; Ben Ami, S.; Benary, O.; Benchekroun, D.; Bendel, M.; Benedict, B. H.; Benekos, N.; Benhammou, Y.; Benincasa, G. P.; Benjamin, D. P.; Benoit, M.; Bensinger, J. R.; Benslama, K.; Bentvelsen, S.; Beretta, M.; Berge, D.; Bergeaas Kuutmann, E.; Berger, N.; Berghaus, F.; Berglund, E.; Beringer, J.; Bernardet, K.; Bernat, P.; Bernhard, R.; Bernius, C.; Berry, T.; Bertin, A.; Besson, N.; Bethke, S.; Bianchi, R. M.; Bianco, M.; Biebel, O.; Biesiada, J.; Biglietti, M.; Bilokon, H.; Bindi, M.; Binet, S.; Bingul, A.; Bini, C.; Biscarat, C.; Bitenc, U.; Black, K. M.; Blair, R. E.; Blanchard, J.-B.; Blanchot, G.; Blocker, C.; Blocki, J.; Blondel, A.; Blum, W.; Blumenschein, U.; Bobbink, G. J.; Bocci, A.; Boehler, M.; Boek, J.; Boelaert, N.; Böser, S.; Bogaerts, J. A.; Bogouch, A.; Bohm, C.; Bohm, J.; Boisvert, V.; Bold, T.; Boldea, V.; Boldyrev, A.; Bondarenko, V. G.; Bondioli, M.; Boonekamp, M.; Booth, J. R. A.; Bordoni, S.; Borer, C.; Borisov, A.; Borissov, G.; Borjanovic, I.; Borroni, S.; Bos, K.; Boscherini, D.; Bosman, M.; Bosteels, M.; Boterenbrood, H.; Bouchami, J.; Boudreau, J.; Bouhova-Thacker, E. V.; Boulahouache, C.; Bourdarios, C.; Boyd, J.; Boyko, I. R.; Bozovic-Jelisavcic, I.; Bracinik, J.; Braem, A.; Branchini, P.; Brandenburg, G. W.; Brandt, A.; Brandt, G.; Brandt, O.; Bratzler, U.; Brau, B.; Brau, J. E.; Braun, H. M.; Brelier, B.; Bremer, J.; Brenner, R.; Bressler, S.; Breton, D.; Brett, N. D.; Britton, D.; Brochu, F. M.; Brock, I.; Brock, R.; Brodbeck, T. J.; Brodet, E.; Broggi, F.; Bromberg, C.; Brooijmans, G.; Brooks, W. K.; Brown, G.; Brubaker, E.; Bruckman de Renstrom, P. A.; Bruncko, D.; Bruneliere, R.; Brunet, S.; Bruni, A.; Bruni, G.; Bruschi, M.; Buanes, T.; Bucci, F.; Buchanan, J.; Buchholz, P.; Buckley, A. G.; Budagov, I. A.; Budick, B.; Büscher, V.; Bugge, L.; Bulekov, O.; Bunse, M.; Buran, T.; Burckhart, H.; Burdin, S.; Burgess, T.; Burke, S.; Busato, E.; Bussey, P.; Buszello, C. P.; Butin, F.; Butler, B.; Butler, J. M.; Buttar, C. M.; Butterworth, J. M.; Byatt, T.; Caballero, J.; Cabrera Urbán, S.; Caforio, D.; Cakir, O.; Calafiura, P.; Calderini, G.; Calfayan, P.; Calkins, R.; Caloba, L. P.; Caloi, R.; Calvet, D.; Camarri, P.; Cambiaghi, M.; Cameron, D.; Campabadal Segura, F.; Campana, S.; Campanelli, M.; Canale, V.; Canelli, F.; Canepa, A.; Cantero, J.; Capasso, L.; Capeans Garrido, M. D. M.; Caprini, I.; Caprini, M.; Capua, M.; Caputo, R.; Caracinha, D.; Caramarcu, C.; Cardarelli, R.; Carli, T.; Carlino, G.; Carminati, L.; Caron, B.; Caron, S.; Carrillo Montoya, G. D.; Carron Montero, S.; Carter, A. A.; Carter, J. R.; Carvalho, J.; Casadei, D.; Casado, M. P.; Cascella, M.; Caso, C.; Castaneda Hernadez, A. M.; Castaneda-Miranda, E.; Castillo Gimenez, V.; Castro, N.; Cataldi, G.; Catinaccio, A.; Catmore, J. R.; Cattai, A.; Cattani, G.; Caughron, S.; Cauz, D.; Cavalleri, P.; Cavalli, D.; Cavalli-Sforza, M.; Cavasinni, V.; Ceradini, F.; Cerqueira, A. S.; Cerri, A.; Cerrito, L.; Cerutti, F.; Cetin, S. A.; Cevenini, F.; Chafaq, A.; Chakraborty, D.; Chan, K.; Chapman, J. D.; Chapman, J. W.; Chareyre, E.; Charlton, D. G.; Chavda, V.; Cheatham, S.; Chekanov, S.; Chekulaev, S. V.; Chelkov, G. A.; Chen, H.; Chen, S.; Chen, T.; Chen, X.; Cheng, S.; Cheplakov, A.; Chepurnov, V. F.; Cherkaoui El Moursli, R.; Tcherniatine, V.; Chesneanu, D.; Cheu, E.; Cheung, S. L.; Chevalier, L.; Chevallier, F.; Chiarella, V.; Chiefari, G.; Chikovani, L.; Childers, J. T.; Chilingarov, A.; Chiodini, G.; Chizhov, M.; Choudalakis, G.; Chouridou, S.; Chren, D.; Christidi, I. A.; Christov, A.; Chromek-Burckhart, D.; Chu, M. L.; Chudoba, J.; Ciapetti, G.; Ciftci, A. K.; Ciftci, R.; Cinca, D.; Cindro, V.; Ciobotaru, M. D.; Ciocca, C.; Ciocio, A.; Cirilli, M.; Citterio, M.; Clark, A.; Cleland, W.; Clemens, J. C.; Clement, B.; Clement, C.; Clements, D.; Coadou, Y.; Cobal, M.; Coccaro, A.; Cochran, J.; Coelli, S.; Coggeshall, J.; Cogneras, E.; Cojocaru, C. D.; Colas, J.; Cole, B.; Colijn, A. P.; Collard, C.; Collins, N. J.; Collins-Tooth, C.; Collot, J.; Colon, G.; Coluccia, R.; Conde Muiño, P.; Coniavitis, E.; Consonni, M.; Constantinescu, S.; Conta, C.; Conventi, F.; Cook, J.; Cooke, M.; Cooper, B. D.; Cooper-Sarkar, A. M.; Cooper-Smith, N. J.; Copic, K.; Cornelissen, T.; Corradi, M.; Corriveau, F.; Corso-Radu, A.; Cortes-Gonzalez, A.; Cortiana, G.; Costa, G.; Costa, M. J.; Costanzo, D.; Costin, T.; Côté, D.; Coura Torres, R.; Courneyea, L.; Cowan, G.; Cowden, C.; Cox, B. E.; Cranmer, K.; Cranshaw, J.; Cristinziani, M.; Crosetti, G.; Crupi, R.; Crépé-Renaudin, S.; Cuenca Almenar, C.; Cuhadar Donszelmann, T.; Curatolo, M.; Curtis, C. J.; Cwetanski, P.; Czyczula, Z.; D'Auria, S.; D'Onofrio, M.; D'Orazio, A.; da Silva, P. V. M.; da Via, C.; Dabrowski, W.; Dai, T.; Dallapiccola, C.; Dallison, S. J.; Daly, C. H.; Dam, M.; Danielsson, H. O.; Dannheim, D.; Dao, V.; Darbo, G.; Darlea, G. L.; Davey, W.; Davidek, T.; Davidson, N.; Davidson, R.; Davison, A. R.; Dawson, I.; Dawson, J. W.; Daya, R. K.; de, K.; de Asmundis, R.; de Castro, S.; de Castro Faria Salgado, P. E.; de Cecco, S.; de Graat, J.; de Groot, N.; de Jong, P.; de La Cruz-Burelo, E.; de La Taille, C.; de Mora, L.; de Oliveira Branco, M.; de Pedis, D.; de Salvo, A.; de Sanctis, U.; de Santo, A.; de Vivie de Regie, J. B.; de Zorzi, G.; Dean, S.; Deberg, H.; Dedes, G.; Dedovich, D. V.; Defay, P. O.; Degenhardt, J.; Dehchar, M.; Del Papa, C.; Del Peso, J.; Del Prete, T.; Dell'Acqua, A.; Dell'Asta, L.; Della Pietra, M.; Della Volpe, D.; Delmastro, M.; Delruelle, N.; Delsart, P. A.; Deluca, C.; Demers, S.; Demichev, M.; Demirkoz, B.; Deng, J.; Deng, W.; Denisov, S. P.; Dennis, C.; Derkaoui, J. E.; Derue, F.; Dervan, P.; Desch, K.; Deviveiros, P. O.; Dewhurst, A.; Dewilde, B.; Dhaliwal, S.; Dhullipudi, R.; di Ciaccio, A.; di Ciaccio, L.; di Domenico, A.; di Girolamo, A.; di Girolamo, B.; di Luise, S.; di Mattia, A.; di Nardo, R.; di Simone, A.; di Sipio, R.; Diaz, M. A.; Diblen, F.; Diehl, E. B.; Dietrich, J.; Diglio, S.; Dindar Yagci, K.; Dingfelder, D. J.; Dionisi, C.; Dita, P.; Dita, S.; Dittus, F.; Djama, F.; Djilkibaev, R.; Djobava, T.; Do Vale, M. A. B.; Do Valle Wemans, A.; Dobbs, M.; Dobos, D.; Dobson, E.; Dobson, M.; Dodd, J.; Dogan, O. B.; Doherty, T.; Doi, Y.; Dolejsi, J.; Dolenc, I.; Dolezal, Z.; Dolgoshein, B. A.; Dohmae, T.; Donega, M.; Donini, J.; Dopke, J.; Doria, A.; Dos Anjos, A.; Dotti, A.; Dova, M. T.; Doxiadis, A.; Doyle, A. T.; Drasal, Z.; Driouichi, C.; Dris, M.; Dubbert, J.; Duchovni, E.; Duckeck, G.; Dudarev, A.; Dudziak, F.; Dührssen, M.; Duflot, L.; Dufour, M.-A.; Dunford, M.; Duperrin, A.; Duran Yildiz, H.; Dushkin, A.; Duxfield, R.; Dwuznik, M.; Düren, M.; Ebenstein, W. L.; Ebke, J.; Eckert, S.; Eckweiler, S.; Edmonds, K.; Edwards, C. A.; Eerola, P.; Egorov, K.; Ehrenfeld, W.; Ehrich, T.; Eifert, T.; Eigen, G.; Einsweiler, K.; Eisenhandler, E.; Ekelof, T.; El Kacimi, M.; Ellert, M.; Elles, S.; Ellinghaus, F.; Ellis, K.; Ellis, N.; Elmsheuser, J.; Elsing, M.; Ely, R.; Emeliyanov, D.; Engelmann, R.; Engl, A.; Epp, B.; Eppig, A.; Epshteyn, V. S.; Ereditato, A.; Eriksson, D.; Ermoline, I.; Ernst, J.; Ernst, M.; Ernwein, J.; Errede, D.; Errede, S.; Ertel, E.; Escalier, M.; Escobar, C.; Espinal Curull, X.; Esposito, B.; Etienne, F.; Etienvre, A. I.; Etzion, E.; Evans, H.; Fabbri, L.; Fabre, C.; Faccioli, P.; Facius, K.; Fakhrutdinov, R. M.; Falciano, S.; Falou, A. C.; Fang, Y.; Fanti, M.; Farbin, A.; Farilla, A.; Farley, J.; Farooque, T.; Farrington, S. M.; Farthouat, P.; Fassi, F.; Fassnacht, P.; Fassouliotis, D.; Fatholahzadeh, B.; Fayard, L.; Fayette, F.; Febbraro, R.; Federic, P.; Fedin, O. L.; Fedorko, I.; Fedorko, W.; Feligioni, L.; Felzmann, C. U.; Feng, C.; Feng, E. J.; Fenyuk, A. B.; Ferencei, J.; Ferland, J.; Fernandes, B.; Fernando, W.; Ferrag, S.; Ferrando, J.; Ferrari, A.; Ferrari, P.; Ferrari, R.; Ferrer, A.; Ferrer, M. L.; Ferrere, D.; Ferretti, C.; Fiascaris, M.; Fiedler, F.; Filipčič, A.; Filippas, A.; Filthaut, F.; Fincke-Keeler, M.; Fiolhais, M. C. N.; Fiorini, L.; Firan, A.; Fischer, G.; Fisher, M. J.; Flechl, M.; Fleck, I.; Fleckner, J.; Fleischmann, P.; Fleischmann, S.; Flick, T.; Flores Castillo, L. R.; Flowerdew, M. J.; Föhlisch, F.; Fokitis, M.; Fonseca Martin, T.; Forbush, D. A.; Formica, A.; Forti, A.; Fortin, D.; Foster, J. M.; Fournier, D.; Foussat, A.; Fowler, A. J.; Fowler, K.; Fox, H.; Francavilla, P.; Franchino, S.; Francis, D.; Franklin, M.; Franz, S.; Fraternali, M.; Fratina, S.; Freestone, J.; French, S. T.; Froeschl, R.; Froidevaux, D.; Frost, J. A.; Fukunaga, C.; Fullana Torregrosa, E.; Fuster, J.; Gabaldon, C.; Gabizon, O.; Gadfort, T.; Gadomski, S.; Gagliardi, G.; Gagnon, P.; Galea, C.; Gallas, E. J.; Gallas, M. V.; Gallop, B. J.; Gallus, P.; Galyaev, E.; Gan, K. K.; Gao, Y. S.; Gaponenko, A.; Garcia-Sciveres, M.; García, C.; García Navarro, J. E.; Gardner, R. W.; Garelli, N.; Garitaonandia, H.; Garonne, V.; Gatti, C.; Gaudio, G.; Gaumer, O.; Gauzzi, P.; Gavrilenko, I. L.; Gay, C.; Gaycken, G.; Gayde, J.-C.; Gazis, E. N.; Ge, P.; Gee, C. N. P.; Geich-Gimbel, Ch.; Gellerstedt, K.; Gemme, C.; Genest, M. H.; Gentile, S.; Georgatos, F.; George, S.; Gerlach, P.; Gershon, A.; Geweniger, C.; Ghazlane, H.; Ghez, P.; Ghodbane, N.; Giacobbe, B.; Giagu, S.; Giakoumopoulou, V.; Giangiobbe, V.; Gianotti, F.; Gibbard, B.; Gibson, A.; Gibson, S. M.; Gilbert, L. M.; Gilchriese, M.; Gilewsky, V.; Gillberg, D.; Gillman, A. R.; Gingrich, D. M.; Ginzburg, J.; Giokaris, N.; Giordani, M. P.; Giordano, R.; Giovannini, P.; Giraud, P. F.; Girtler, P.; Giugni, D.; Giusti, P.; Gjelsten, B. K.; Gladilin, L. K.; Glasman, C.; Glazov, A.; Glitza, K. W.; Glonti, G. L.; Godfrey, J.; Godlewski, J.; Goebel, M.; Göpfert, T.; Goeringer, C.; Gössling, C.; Göttfert, T.; Goggi, V.; Goldfarb, S.; Goldin, D.; Golling, T.; Gollub, N. P.; Gomes, A.; Gomez Fajardo, L. S.; Gonçalo, R.; Gonella, L.; Gong, C.; González de La Hoz, S.; Gonzalez Silva, M. L.; Gonzalez-Sevilla, S.; Goodson, J. J.; Goossens, L.; Gorbounov, P. A.; Gordon, H. A.; Gorelov, I.; Gorfine, G.; Gorini, B.; Gorini, E.; Gorišek, A.; Gornicki, E.; Goryachev, S. V.; Goryachev, V. N.; Gosdzik, B.; Gosselink, M.; Gostkin, M. I.; Gough Eschrich, I.; Gouighri, M.; Goujdami, D.; Goulette, M. P.; Goussiou, A. G.; Goy, C.; Grabowska-Bold, I.; Grafström, P.; Grahn, K.-J.; Granado Cardoso, L.; Grancagnolo, F.; Grancagnolo, S.; Grassi, V.; Gratchev, V.; Grau, N.; Gray, H. M.; Gray, J. A.; Graziani, E.; Green, B.; Greenshaw, T.; Greenwood, Z. D.; Gregor, I. M.; Grenier, P.; Griesmayer, E.; Griffiths, J.; Grigalashvili, N.; Grillo, A. A.; Grimm, K.; Grinstein, S.; Grishkevich, Y. V.; Groer, L. S.; Grognuz, J.; Groh, M.; Groll, M.; Gross, E.; Grosse-Knetter, J.; Groth-Jensen, J.; Grybel, K.; Guarino, V. J.; Guicheney, C.; Guida, A.; Guillemin, T.; Guler, H.; Gunther, J.; Guo, B.; Gupta, A.; Gusakov, Y.; Gutierrez, A.; Gutierrez, P.; Guttman, N.; Gutzwiller, O.; Guyot, C.; Gwenlan, C.; Gwilliam, C. B.; Haas, A.; Haas, S.; Haber, C.; Hackenburg, R.; Hadavand, H. K.; Hadley, D. R.; Haefner, P.; Härtel, R.; Hajduk, Z.; Hakobyan, H.; Haller, J.; Hamacher, K.; Hamilton, A.; Hamilton, S.; Han, H.; Han, L.; Hanagaki, K.; Hance, M.; Handel, C.; Hanke, P.; Hansen, J. R.; Hansen, J. B.; Hansen, J. D.; Hansen, P. H.; Hansl-Kozanecka, T.; Hansson, P.; Hara, K.; Hare, G. A.; Harenberg, T.; Harrington, R. D.; Harris, O. B.; Harris, O. M.; Harrison, K.; Hartert, J.; Hartjes, F.; Haruyama, T.; Harvey, A.; Hasegawa, S.; Hasegawa, Y.; Hashemi, K.; Hassani, S.; Hatch, M.; Haug, F.; Haug, S.; Hauschild, M.; Hauser, R.; Havranek, M.; Hawkes, C. M.; Hawkings, R. J.; Hawkins, D.; Hayakawa, T.; Hayward, H. S.; Haywood, S. J.; He, M.; Head, S. J.; Hedberg, V.; Heelan, L.; Heim, S.; Heinemann, B.; Heisterkamp, S.; Helary, L.; Heller, M.; Hellman, S.; Helsens, C.; Hemperek, T.; Henderson, R. C. W.; Henke, M.; Henrichs, A.; Correia, A. M. Henriques; Henrot-Versille, S.; Hensel, C.; Henß, T.; Hershenhorn, A. D.; Herten, G.; Hertenberger, R.; Hervas, L.; Hessey, N. P.; Hidvegi, A.; Higón-Rodriguez, E.; Hill, D.; Hill, J. C.; Hiller, K. H.; Hillier, S. J.; Hinchliffe, I.; Hirose, M.; Hirsch, F.; Hobbs, J.; Hod, N.; Hodgkinson, M. C.; Hodgson, P.; Hoecker, A.; Hoeferkamp, M. R.; Hoffman, J.; Hoffmann, D.; Hohlfeld, M.; Holmgren, S. O.; Holy, T.; Holzbauer, J. L.; Homma, Y.; Homola, P.; Horazdovsky, T.; Hori, T.; Horn, C.; Horner, S.; Horvat, S.; Hostachy, J.-Y.; Hou, S.; Houlden, M. A.; Hoummada, A.; Howe, T.; Hrivnac, J.; Hryn'ova, T.; Hsu, P. J.; Hsu, S.-C.; Huang, G. S.; Hubacek, Z.; Hubaut, F.; Huegging, F.; Hughes, E. W.; Hughes, G.; Hughes-Jones, R. E.; Hurst, P.; Hurwitz, M.; Husemann, U.; Huseynov, N.; Huston, J.; Huth, J.; Iacobucci, G.; Iakovidis, G.; Ibragimov, I.; Iconomidou-Fayard, L.; Idarraga, J.; Iengo, P.; Igonkina, O.; Ikegami, Y.; Ikeno, M.; Ilchenko, Y.; Iliadis, D.; Ilyushenka, Y.; Imori, M.; Ince, T.; Ioannou, P.; Iodice, M.; Irles Quiles, A.; Ishikawa, A.; Ishino, M.; Ishmukhametov, R.; Isobe, T.; Issakov, V.; Issever, C.; Istin, S.; Itoh, Y.; Ivashin, A. V.; Iwanski, W.; Iwasaki, H.; Izen, J. M.; Izzo, V.; Jackson, J. N.; Jackson, P.; Jaekel, M.; Jahoda, M.; Jain, V.; Jakobs, K.; Jakobsen, S.; Jakubek, J.; Jana, D.; Jansen, E.; Jantsch, A.; Janus, M.; Jared, R. C.; Jarlskog, G.; Jarron, P.; Jeanty, L.; Jelen, K.; Jen-La Plante, I.; Jenni, P.; Jez, P.; Jézéquel, S.; Ji, W.; Jia, J.; Jiang, Y.; Jimenez Belenguer, M.; Jin, G.; Jin, S.; Jinnouchi, O.; Joffe, D.; Johansen, M.; Johansson, K. E.; Johansson, P.; Johnert, S.; Johns, K. A.; Jon-And, K.; Jones, G.; Jones, R. W. L.; Jones, T. W.; Jones, T. J.; Jonsson, O.; Joos, D.; Joram, C.; Jorge, P. M.; Juranek, V.; Jussel, P.; Kabachenko, V. V.; Kabana, S.; Kaci, M.; Kaczmarska, A.; Kado, M.; Kagan, H.; Kagan, M.; Kaiser, S.; Kajomovitz, E.; Kalinovskaya, L. V.; Kalinowski, A.; Kama, S.; Kanaya, N.; Kaneda, M.; Kantserov, V. A.; Kanzaki, J.; Kaplan, B.; Kapliy, A.; Kaplon, J.; Karagounis, M.; Karagoz Unel, M.; Kartvelishvili, V.; Karyukhin, A. N.; Kashif, L.; Kasmi, A.; Kass, R. D.; Kastanas, A.; Kastoryano, M.; Kataoka, M.; Kataoka, Y.; Katsoufis, E.; Katzy, J.; Kaushik, V.; Kawagoe, K.; Kawamoto, T.; Kawamura, G.; Kayl, M. S.; Kayumov, F.; Kazanin, V. A.; Kazarinov, M. Y.; Kazi, S. I.; Keates, J. R.; Keeler, R.; Keener, P. T.; Kehoe, R.; Keil, M.; Kekelidze, G. D.; Kelly, M.; Kennedy, J.; Kenyon, M.; Kepka, O.; Kerschen, N.; Kerševan, B. P.; Kersten, S.; Kessoku, K.; Khakzad, M.; Khalil-Zada, F.; Khandanyan, H.; Khanov, A.; Kharchenko, D.; Khodinov, A.; Kholodenko, A. G.; Khomich, A.; Khoriauli, G.; Khovanskiy, N.; Khovanskiy, V.; Khramov, E.; Khubua, J.; Kilvington, G.; Kim, H.; Kim, M. S.; Kim, P. C.; Kim, S. H.; Kind, O.; Kind, P.; King, B. T.; Kirk, J.; Kirsch, G. P.; Kirsch, L. E.; Kiryunin, A. E.; Kisielewska, D.; Kittelmann, T.; Kiyamura, H.; Kladiva, E.; Klein, M.; Klein, U.; Kleinknecht, K.; Klemetti, M.; Klier, A.; Klimentov, A.; Klingenberg, R.; Klinkby, E. B.; Klioutchnikova, T.; Klok, P. F.; Klous, S.; Kluge, E.-E.; Kluge, T.; Kluit, P.; Klute, M.; Kluth, S.; Knecht, N. S.; Kneringer, E.; Ko, B. R.; Kobayashi, T.; Kobel, M.; Koblitz, B.; Kocian, M.; Kocnar, A.; Kodys, P.; Köneke, K.; König, A. C.; Köpke, L.; Koetsveld, F.; Koevesarki, P.; Koffas, T.; Koffeman, E.; Kohn, F.; Kohout, Z.; Kohriki, T.; Kokott, T.; Kolanoski, H.; Kolesnikov, V.; Koletsou, I.; Koll, J.; Kollar, D.; Kolos, S.; Kolya, S. D.; Komar, A. A.; Komaragiri, J. R.; Kondo, T.; Kono, T.; Kononov, A. I.; Konoplich, R.; Konovalov, S. P.; Konstantinidis, N.; Koperny, S.; Korcyl, K.; Kordas, K.; Koreshev, V.; Korn, A.; Korolkov, I.; Korolkova, E. V.; Korotkov, V. A.; Kortner, O.; Kostka, P.; Kostyukhin, V. V.; Kotamäki, M. J.; Kotov, S.; Kotov, V. M.; Kotov, K. Y.; Koupilova, Z.; Kourkoumelis, C.; Koutsman, A.; Kowalewski, R.; Kowalski, H.; Kowalski, T. Z.; Kozanecki, W.; Kozhin, A. S.; Kral, V.; Kramarenko, V. A.; Kramberger, G.; Krasny, M. W.; Krasznahorkay, A.; Kreisel, A.; Krejci, F.; Krepouri, A.; Kretzschmar, J.; Krieger, P.; Krobath, G.; Kroeninger, K.; Kroha, H.; Kroll, J.; Kroseberg, J.; Krstic, J.; Kruchonak, U.; Krüger, H.; Krumshteyn, Z. V.; Kubota, T.; Kuehn, S.; Kugel, A.; Kuhl, T.; Kuhn, D.; Kukhtin, V.; Kulchitsky, Y.; Kuleshov, S.; Kummer, C.; Kuna, M.; Kupco, A.; Kurashige, H.; Kurata, M.; Kurchaninov, L. L.; Kurochkin, Y. A.; Kus, V.; Kuykendall, W.; Kuznetsova, E.; Kvasnicka, O.; Kwee, R.; La Rosa, M.; La Rotonda, L.; Labarga, L.; Labbe, J.; Lacasta, C.; Lacava, F.; Lacker, H.; Lacour, D.; Lacuesta, V. R.; Ladygin, E.; Lafaye, R.; Laforge, B.; Lagouri, T.; Lai, S.; Lamanna, M.; Lampen, C. L.; Lampl, W.; Lancon, E.; Landgraf, U.; Landon, M. P. J.; Lane, J. L.; Lankford, A. J.; Lanni, F.; Lantzsch, K.; Lanza, A.; Laplace, S.; Lapoire, C.; Laporte, J. F.; Lari, T.; Larionov, A. V.; Larner, A.; Lasseur, C.; Lassnig, M.; Laurelli, P.; Lavrijsen, W.; Laycock, P.; Lazarev, A. B.; Lazzaro, A.; Le Dortz, O.; Le Guirriec, E.; Le Maner, C.; Le Menedeu, E.; Le Vine, M.; Leahu, M.; Lebedev, A.; Lebel, C.; Lecompte, T.; Ledroit-Guillon, F.; Lee, H.; Lee, J. S. H.; Lee, S. C.; Lefebvre, M.; Legendre, M.; Legeyt, B. C.; Legger, F.; Leggett, C.; Lehmacher, M.; Lehmann Miotto, G.; Lei, X.; Leitner, R.; Lelas, D.; Lellouch, D.; Lellouch, J.; Leltchouk, M.; Lendermann, V.; Leney, K. J. C.; Lenz, T.; Lenzen, G.; Lenzi, B.; Leonhardt, K.; Leroy, C.; Lessard, J.-R.; Lester, C. G.; Leung Fook Cheong, A.; Levêque, J.; Levin, D.; Levinson, L. J.; Levitski, M. S.; Levonian, S.; Lewandowska, M.; Leyton, M.; Li, H.; Li, J.; Li, S.; Li, X.; Liang, Z.; Liang, Z.; Liberti, B.; Lichard, P.; Lichtnecker, M.; Lie, K.; Liebig, W.; Liko, D.; Lilley, J. N.; Lim, H.; Limosani, A.; Limper, M.; Lin, S. C.; Lindsay, S. W.; Linhart, V.; Linnemann, J. T.; Liolios, A.; Lipeles, E.; Lipinsky, L.; Lipniacka, A.; Liss, T. M.; Lissauer, D.; Litke, A. M.; Liu, C.; Liu, D.; Liu, H.; Liu, J. B.; Liu, M.; Liu, S.; Liu, T.; Liu, Y.; Livan, M.; Lleres, A.; Lloyd, S. L.; Lobodzinska, E.; Loch, P.; Lockman, W. S.; Lockwitz, S.; Loddenkoetter, T.; Loebinger, F. K.; Loginov, A.; Loh, C. W.; Lohse, T.; Lohwasser, K.; Lokajicek, M.; Loken, J.; Lopes, L.; Lopez Mateos, D.; Losada, M.; Loscutoff, P.; Losty, M. J.; Lou, X.; Lounis, A.; Loureiro, K. F.; Lovas, L.; Love, J.; Love, P.; Lowe, A. J.; Lu, F.; Lu, J.; Lubatti, H. J.; Luci, C.; Lucotte, A.; Ludwig, A.; Ludwig, D.; Ludwig, I.; Ludwig, J.; Luehring, F.; Luisa, L.; Lumb, D.; Luminari, L.; Lund, E.; Lund-Jensen, B.; Lundberg, B.; Lundberg, J.; Lundquist, J.; Lutz, G.; Lynn, D.; Lys, J.; Lytken, E.; Ma, H.; Ma, L. L.; Maccarrone, G.; Macchiolo, A.; Maček, B.; Miguens, J. Machado; Mackeprang, R.; Madaras, R. J.; Mader, W. F.; Maenner, R.; Maeno, T.; Mättig, P.; Mättig, S.; Magalhaes Martins, P. J.; Magradze, E.; Magrath, C. A.; Mahalalel, Y.; Mahboubi, K.; Mahmood, A.; Mahout, G.; Maiani, C.; Maidantchik, C.; Maio, A.; Majewski, S.; Makida, Y.; Makouski, M.; Makovec, N.; Malecki, Pa.; Malecki, P.; Maleev, V. P.; Malek, F.; Mallik, U.; Malon, D.; Maltezos, S.; Malyshev, V.; Malyukov, S.; Mambelli, M.; Mameghani, R.; Mamuzic, J.; Manabe, A.; Mandelli, L.; Mandić, I.; Mandrysch, R.; Maneira, J.; Mangeard, P. S.; Manjavidze, I. D.; Manousakis-Katsikakis, A.; Mansoulie, B.; Mapelli, A.; Mapelli, L.; March, L.; Marchand, J. F.; Marchese, F.; Marcisovsky, M.; Marino, C. P.; Marques, C. N.; Marroquim, F.; Marshall, R.; Marshall, Z.; Martens, F. K.; Marti I Garcia, S.; Martin, A. J.; Martin, A. J.; Martin, B.; Martin, B.; Martin, F. F.; Martin, J. P.; Martin, T. A.; Martin Dit Latour, B.; Martinez, M.; Martinez Outschoorn, V.; Martini, A.; Martynenko, V.; Martyniuk, A. C.; Maruyama, T.; Marzano, F.; Marzin, A.; Masetti, L.; Mashimo, T.; Mashinistov, R.; Masik, J.; Maslennikov, A. L.; Massaro, G.; Massol, N.; Mastroberardino, A.; Masubuchi, T.; Mathes, M.; Matricon, P.; Matsumoto, H.; Matsunaga, H.; Matsushita, T.; Mattravers, C.; Maxfield, S. J.; May, E. N.; Mayne, A.; Mazini, R.; Mazur, M.; Mazzanti, M.; Mazzanti, P.; Mc Donald, J.; Mc Kee, S. P.; McCarn, A.; McCarthy, R. L.; McCubbin, N. A.; McFarlane, K. W.; McGlone, H.; McHedlidze, G.; McLaren, R. A.; McMahon, S. J.; McMahon, T. R.; McPherson, R. A.; Meade, A.; Mechnich, J.; Mechtel, M.; Medinnis, M.; Meera-Lebbai, R.; Meguro, T. M.; Mehdiyev, R.; Mehlhase, S.; Mehta, A.; Meier, K.; Meirose, B.; Melamed-Katz, A.; Mellado Garcia, B. R.; Meng, Z.; Menke, S.; Meoni, E.; Merkl, D.; Mermod, P.; Merola, L.; Meroni, C.; Merritt, F. S.; Messina, A. M.; Messmer, I.; Metcalfe, J.; Mete, A. S.; Meyer, J.-P.; Meyer, J.; Meyer, T. C.; Meyer, W. T.; Miao, J.; Micu, L.; Middleton, R. P.; Migas, S.; Mijović, L.; Mikenberg, G.; Mikuž, M.; Miller, D. W.; Mills, W. J.; Mills, C. M.; Milov, A.; Milstead, D. A.; Minaenko, A. A.; Miñano, M.; Minashvili, I. A.; Mincer, A. I.; Mindur, B.; Mineev, M.; Mir, L. M.; Mirabelli, G.; Misawa, S.; Miscetti, S.; Misiejuk, A.; Mitrevski, J.; Mitsou, V. A.; Miyagawa, P. S.; Mjörnmark, J. U.; Mladenov, D.; Moa, T.; Mockett, P.; Moed, S.; Moeller, V.; Mönig, K.; Möser, N.; Mohn, B.; Mohr, W.; Mohrdieck-Möck, S.; Moles-Valls, R.; Molina-Perez, J.; Moloney, G.; Monk, J.; Monnier, E.; Montesano, S.; Monticelli, F.; Moore, R. W.; Herrera, C. Mora; Moraes, A.; Morais, A.; Morel, J.; Morello, G.; Moreno, D.; Moreno Llácer, M.; Morettini, P.; Morii, M.; Morley, A. K.; Mornacchi, G.; Morozov, S. V.; Morris, J. D.; Moser, H. G.; Mosidze, M.; Moss, J.; Mount, R.; Mountricha, E.; Mouraviev, S. V.; Moyse, E. J. W.; Mudrinic, M.; Mueller, F.; Mueller, J.; Mueller, K.; Müller, T. A.; Muenstermann, D.; Muir, A.; Murillo Garcia, R.; Murray, W. J.; Mussche, I.; Musto, E.; Myagkov, A. G.; Myska, M.; Nadal, J.; Nagai, K.; Nagano, K.; Nagasaka, Y.; Nairz, A. M.; Nakamura, K.; Nakano, I.; Nakatsuka, H.; Nanava, G.; Napier, A.; Nash, M.; Nation, N. R.; Nattermann, T.; Naumann, T.; Navarro, G.; Nderitu, S. K.; Neal, H. A.; Nebot, E.; Nechaeva, P.; Negri, A.; Negri, G.; Nelson, A.; Nelson, T. K.; Nemecek, S.; Nemethy, P.; Nepomuceno, A. A.; Nessi, M.; Neubauer, M. S.; Neusiedl, A.; Neves, R. N.; Nevski, P.; Newcomer, F. M.; Nicholson, C.; Nickerson, R. B.; Nicolaidou, R.; Nicolas, L.; Nicoletti, G.; Niedercorn, F.; Nielsen, J.; Nikiforov, A.; Nikolaev, K.; Nikolic-Audit, I.; Nikolopoulos, K.; Nilsen, H.; Nilsson, P.; Nisati, A.; Nishiyama, T.; Nisius, R.; Nodulman, L.; Nomachi, M.; Nomidis, I.; Nomoto, H.; Nordberg, M.; Nordkvist, B.; Notz, D.; Novakova, J.; Nozaki, M.; Nožička, M.; Nugent, I. M.; Nuncio-Quiroz, A.-E.; Nunes Hanninger, G.; Nunnemann, T.; Nurse, E.; O'Neil, D. C.; O'Shea, V.; Oakham, F. G.; Oberlack, H.; Ochi, A.; Oda, S.; Odaka, S.; Odier, J.; Odino, G. A.; Ogren, H.; Oh, S. H.; Ohm, C. C.; Ohshima, T.; Ohshita, H.; Ohsugi, T.; Okada, S.; Okawa, H.; Okumura, Y.; Olcese, M.; Olchevski, A. G.; Oliveira, M.; Oliveira Damazio, D.; Oliver, J.; Oliver Garcia, E.; Olivito, D.; Olszewski, A.; Olszowska, J.; Omachi, C.; Onofre, A.; Onyisi, P. U. E.; Oram, C. J.; Ordonez, G.; Oreglia, M. J.; Oren, Y.; Orestano, D.; Orlov, I.; Oropeza Barrera, C.; Orr, R. S.; Ortega, E. O.; Osculati, B.; Osuna, C.; Otec, R.; P Ottersbach, J.; Ould-Saada, F.; Ouraou, A.; Ouyang, Q.; Owen, M.; Owen, S.; Ozcan, V. E.; Ozone, K.; Ozturk, N.; Pacheco Pages, A.; Padhi, S.; Padilla Aranda, C.; Paganis, E.; Pahl, C.; Paige, F.; Pajchel, K.; Pal, A.; Palestini, S.; Pallin, D.; Palma, A.; Palmer, J. D.; Pan, Y. B.; Panagiotopoulou, E.; Panes, B.; Panikashvili, N.; Panitkin, S.; Pantea, D.; Panuskova, M.; Paolone, V.; Papadopoulou, Th. D.; Park, S. J.; Park, W.; Parker, M. A.; Parker, S. I.; Parodi, F.; Parsons, J. A.; Parzefall, U.; Pasqualucci, E.; Passardi, G.; Passeri, A.; Pastore, F.; Pastore, Fr.; Pásztor, G.; Pataraia, S.; Pater, J. R.; Patricelli, S.; Patwa, A.; Pauly, T.; Peak, L. S.; Pecsy, M.; Pedraza Morales, M. I.; Peleganchuk, S. V.; Peng, H.; Penson, A.; Penwell, J.; Perantoni, M.; Perez, K.; Perez Codina, E.; Pérez García-Estañ, M. T.; Perez Reale, V.; Perini, L.; Pernegger, H.; Perrino, R.; Perrodo, P.; Persembe, S.; Perus, P.; Peshekhonov, V. D.; Petersen, B. A.; Petersen, J.; Petersen, T. C.; Petit, E.; Petridou, C.; Petrolo, E.; Petrucci, F.; Petschull, D.; Petteni, M.; Pezoa, R.; Pfeifer, B.; Phan, A.; Phillips, A. W.; Piacquadio, G.; Piccinini, M.; Piegaia, R.; Pilcher, J. E.; Pilkington, A. D.; Pina, J.; Pinamonti, M.; Pinfold, J. L.; Ping, J.; Pinto, B.; Pirotte, O.; Pizio, C.; Placakyte, R.; Plamondon, M.; Plano, W. G.; Pleier, M.-A.; Poblaguev, A.; Poddar, S.; Podlyski, F.; Poffenberger, P.; Poggioli, L.; Pohl, M.; Polci, F.; Polesello, G.; Policicchio, A.; Polini, A.; Poll, J.; Polychronakos, V.; Pomarede, D. M.; Pomeroy, D.; Pommès, K.; Pontecorvo, L.; Pope, B. G.; Popovic, D. S.; Poppleton, A.; Popule, J.; Portell Bueso, X.; Porter, R.; Pospelov, G. E.; Pospichal, P.; Pospisil, S.; Potekhin, M.; Potrap, I. N.; Potter, C. J.; Potter, C. T.; Potter, K. P.; Poulard, G.; Poveda, J.; Prabhu, R.; Pralavorio, P.; Prasad, S.; Pravahan, R.; Preda, T.; Pretzl, K.; Pribyl, L.; Price, D.; Price, L. E.; Prichard, P. M.; Prieur, D.; Primavera, M.; Prokofiev, K.; Prokoshin, F.; Protopopescu, S.; Proudfoot, J.; Prudent, X.; Przysiezniak, H.; Psoroulas, S.; Ptacek, E.; Puigdengoles, C.; Purdham, J.; Purohit, M.; Puzo, P.; Pylypchenko, Y.; Qi, M.; Qian, J.; Qian, W.; Qian, Z.; Qin, Z.; Qing, D.; Quadt, A.; Quarrie, D. R.; Quayle, W. B.; Quinonez, F.; Raas, M.; Radeka, V.; Radescu, V.; Radics, B.; Rador, T.; Ragusa, F.; Rahal, G.; Rahimi, A. M.; Rahm, D.; Rajagopalan, S.; Rammes, M.; Ratoff, P. N.; Rauscher, F.; Rauter, E.; Raymond, M.; Read, A. L.; Rebuzzi, D. M.; Redelbach, A.; Redlinger, G.; Reece, R.; Reeves, K.; Reinherz-Aronis, E.; Reinsch, A.; Reisinger, I.; Reljic, D.; Rembser, C.; Ren, Z. L.; Renkel, P.; Rescia, S.; Rescigno, M.; Resconi, S.; Resende, B.; Reznicek, P.; Rezvani, R.; Richards, A.; Richards, R. A.; Richter, D.; Richter, R.; Richter-Was, E.; Ridel, M.; Rieke, S.; Rijpstra, M.; Rijssenbeek, M.; Rimoldi, A.; Rinaldi, L.; Rios, R. R.; Riu, I.; Rivoltella, G.; Rizatdinova, F.; Rizvi, E. R.; Roa Romero, D. A.; Robertson, S. H.; Robichaud-Veronneau, A.; Robinson, D.; Robinson, M.; Robson, A.; Rocha de Lima, J. G.; Roda, C.; Rodriguez, D.; Rodriguez Garcia, Y.; Roe, S.; Røhne, O.; Rojo, V.; Rolli, S.; Romaniouk, A.; Romanov, V. M.; Romeo, G.; Romero Maltrana, D.; Roos, L.; Ros, E.; Rosati, S.; Rosenbaum, G. A.; Rosenberg, E. I.; Rosselet, L.; Rossi, L. P.; Rotaru, M.; Rothberg, J.; Rottländer, I.; Rousseau, D.; Royon, C. R.; Rozanov, A.; Rozen, Y.; Ruan, X.; Ruckert, B.; Ruckstuhl, N.; Rud, V. I.; Rudolph, G.; Rühr, F.; Ruggieri, F.; Ruiz-Martinez, A.; Rumyantsev, L.; Rusakovich, N. A.; Rutherfoord, J. P.; Ruwiedel, C.; Ruzicka, P.; Ryabov, Y. F.; Ryadovikov, V.; Ryan, P.; Rybkin, G.; Rzaeva, S.; Saavedra, A. F.; Sadrozinski, H. F.-W.; Sadykov, R.; Sakamoto, H.; Salamanna, G.; Salamon, A.; Saleem, M.; Salihagic, D.; Salnikov, A.; Salt, J.; Salvachua Ferrando, B. M.; Salvatore, D.; Salvatore, F.; Salvucci, A.; Salzburger, A.; Sampsonidis, D.; Samset, B. H.; Sanchis Lozano, M. A.; Sandaker, H.; Sander, H. G.; Sanders, M. P.; Sandhoff, M.; Sandstroem, R.; Sandvoss, S.; Sankey, D. P. C.; Sanny, B.; Sansoni, A.; Santamarina Rios, C.; Santi, L.; Santoni, C.; Santonico, R.; Santos, D.; Santos, J.; Saraiva, J. G.; Sarangi, T.; Sarkisyan-Grinbaum, E.; Sarri, F.; Sasaki, O.; Sasaki, T.; Sasao, N.; Satsounkevitch, I.; Sauvage, G.; Savard, P.; Savine, A. Y.; Savinov, V.; Sawyer, L.; Saxon, D. H.; Says, L. P.; Sbarra, C.; Sbrizzi, A.; Scannicchio, D. A.; Schaarschmidt, J.; Schacht, P.; Schäfer, U.; Schaetzel, S.; Schaffer, A. C.; Schaile, D.; Schamberger, R. D.; Schamov, A. G.; Schegelsky, V. A.; Scheirich, D.; Schernau, M.; Scherzer, M. I.; Schiavi, C.; Schieck, J.; Schioppa, M.; Schlenker, S.; Schlereth, J. L.; Schmid, P.; Schmidt, M. P.; Schmieden, K.; Schmitt, C.; Schmitz, M.; Schott, M.; Schouten, D.; Schovancova, J.; Schram, M.; Schreiner, A.; Schroeder, C.; Schroer, N.; Schroers, M.; Schuler, G.; Schultes, J.; Schultz-Coulon, H.-C.; Schumacher, J.; Schumacher, M.; Schumm, B. A.; Schune, Ph.; Schwanenberger, C.; Schwartzman, A.; Schwemling, Ph.; Schwienhorst, R.; Schwierz, R.; Schwindling, J.; Scott, W. G.; Searcy, J.; Sedykh, E.; Segura, E.; Seidel, S. C.; Seiden, A.; Seifert, F.; Seixas, J. M.; Sekhniaidze, G.; Seliverstov, D. M.; Sellden, B.; Seman, M.; Semprini-Cesari, N.; Serfon, C.; Serin, L.; Seuster, R.; Severini, H.; Sevior, M. E.; Sfyrla, A.; Shamim, M.; Shan, L. Y.; Shank, J. T.; Shao, Q. T.; Shapiro, M.; Shatalov, P. B.; Shaver, L.; Shaw, C.; Shaw, K.; Sherman, D.; Sherwood, P.; Shibata, A.; Shimojima, M.; Shin, T.; Shmeleva, A.; Shochet, M. J.; Shupe, M. A.; Sicho, P.; Sidoti, A.; Siebel, A.; Siegert, F.; Siegrist, J.; Sijacki, Dj.; Silbert, O.; Silva, J.; Silver, Y.; Silverstein, D.; Silverstein, S. B.; Simak, V.; Simic, Lj.; Simion, S.; Simmons, B.; Simonyan, M.; Sinervo, P.; Sinev, N. B.; Sipica, V.; Siragusa, G.; Sisakyan, A. N.; Sivoklokov, S. Yu.; Sjoelin, J.; Sjursen, T. B.; Skubic, P.; Skvorodnev, N.; Slater, M.; Slavicek, T.; Sliwa, K.; Sloper, J.; Sluka, T.; Smakhtin, V.; Smirnov, S. Yu.; Smirnov, Y.; Smirnova, L. N.; Smirnova, O.; Smith, B. C.; Smith, D.; Smith, K. M.; Smizanska, M.; Smolek, K.; Snesarev, A. A.; Snow, S. W.; Snow, J.; Snuverink, J.; Snyder, S.; Soares, M.; Sobie, R.; Sodomka, J.; Soffer, A.; Solans, C. A.; Solar, M.; Solfaroli Camillocci, E.; Solodkov, A. A.; Solovyanov, O. V.; Soluk, R.; Sondericker, J.; Sopko, V.; Sopko, B.; Sosebee, M.; Sosnovtsev, V. V.; Sospedra Suay, L.; Soukharev, A.; Spagnolo, S.; Spanò, F.; Speckmayer, P.; Spencer, E.; Spighi, R.; Spigo, G.; Spila, F.; Spiwoks, R.; Spousta, M.; Spreitzer, T.; Spurlock, B.; Denis, R. D. St.; Stahl, T.; Stamen, R.; Stancu, S. N.; Stanecka, E.; Stanek, R. W.; Stanescu, C.; Stapnes, S.; Starchenko, E. A.; Stark, J.; Staroba, P.; Starovoitov, P.; Stastny, J.; Staude, A.; Stavina, P.; Stavropoulos, G.; Steinbach, P.; Steinberg, P.; Stekl, I.; Stelzer, B.; Stelzer, H. J.; Stelzer-Chilton, O.; Stenzel, H.; Stevenson, K.; Stewart, G.; Stockton, M. C.; Stoerig, K.; Stoicea, G.; Stonjek, S.; Strachota, P.; Stradling, A.; Straessner, A.; Strandberg, J.; Strandberg, S.; Strandlie, A.; Strauss, M.; Strizenec, P.; Ströhmer, R.; Strom, D. M.; Strong, J. A.; Stroynowski, R.; Strube, J.; Stugu, B.; Stumer, I.; Soh, D. A.; Su, D.; Suchkov, S. I.; Sugaya, Y.; Sugimoto, T.; Suhr, C.; Suk, M.; Sulin, V. V.; Sultansoy, S.; Sumida, T.; Sun, X.; Sundermann, J. E.; Suruliz, K.; Sushkov, S.; Susinno, G.; Sutton, M. R.; Suzuki, T.; Suzuki, Y.; Sviridov, Yu. M.; Sykora, I.; Sykora, T.; Szymocha, T.; Sánchez, J.; Ta, D.; Tackmann, K.; Taffard, A.; Tafirout, R.; Taga, A.; Takahashi, Y.; Takai, H.; Takashima, R.; Takeda, H.; Takeshita, T.; Talby, M.; Talyshev, A.; Tamsett, M. C.; Tanaka, J.; Tanaka, R.; Tanaka, S.; Tanaka, S.; Tappern, G. P.; Tapprogge, S.; Tardif, D.; Tarem, S.; Tarrade, F.; Tartarelli, G. F.; Tas, P.; Tasevsky, M.; Tassi, E.; Taylor, C.; Taylor, F. E.; Taylor, G. N.; Taylor, R. P.; Taylor, W.; Teixeira-Dias, P.; Ten Kate, H.; Teng, P. K.; Terada, S.; Terashi, K.; Terron, J.; Terwort, M.; Testa, M.; Teuscher, R. J.; Tevlin, C. M.; Thadome, J.; Thananuwong, R.; Thioye, M.; Thoma, S.; Thomas, J. P.; Thomas, T. L.; Thompson, E. N.; Thompson, P. D.; Thompson, P. D.; Thompson, R. J.; Thompson, A. S.; Thomson, E.; Thun, R. P.; Tic, T.; Tikhomirov, V. O.; Tikhonov, Y. A.; Timmermans, C. J. W. P.; Tipton, P.; Tique Aires Viegas, F. J.; Tisserant, S.; Tobias, J.; Toczek, B.; Todorov, T.; Todorova-Nova, S.; Toggerson, B.; Tojo, J.; Tokár, S.; Tokushuku, K.; Tollefson, K.; Tomasek, L.; Tomasek, M.; Tomasz, F.; Tomoto, M.; Tompkins, D.; Tompkins, L.; Toms, K.; Tong, G.; Tonoyan, A.; Topfel, C.; Topilin, N. D.; Torrence, E.; Torró Pastor, E.; Toth, J.; Touchard, F.; Tovey, D. R.; Tovey, S. N.; Trefzger, T.; Tremblet, L.; Tricoli, A.; Trigger, I. M.; Trincaz-Duvoid, S.; Trinh, T. N.; Tripiana, M. F.; Triplett, N.; Trivedi, A.; Trocmé, B.; Troncon, C.; Trzupek, A.; Tsarouchas, C.; Tseng, J. C.-L.; Tsiafis, I.; Tsiakiris, M.; Tsiareshka, P. V.; Tsionou, D.; Tsipolitis, G.; Tsiskaridze, V.; Tskhadadze, E. G.; Tsukerman, I. I.; Tsulaia, V.; Tsung, J.-W.; Tsuno, S.; Tsybychev, D.; Turala, M.; Turecek, D.; Turk Cakir, I.; Turlay, E.; Tuts, P. M.; Twomey, M. S.; Tylmad, M.; Tyndel, M.; Tzanakos, G.; Uchida, K.; Ueda, I.; Uhlenbrock, M.; Uhrmacher, M.; Ukegawa, F.; Unal, G.; Underwood, D. G.; Undrus, A.; Unel, G.; Unno, Y.; Urbaniec, D.; Urkovsky, E.; Urquijo, P.; Urrejola, P.; Usai, G.; Uslenghi, M.; Vacavant, L.; Vacek, V.; Vachon, B.; Vahsen, S.; Valenta, J.; Valente, P.; Valentinetti, S.; Valkar, S.; Valladolid Gallego, E.; Vallecorsa, S.; Valls Ferrer, J. A.; van Berg, R.; van der Graaf, H.; van der Kraaij, E.; van der Poel, E.; van der Ster, D.; van Eldik, N.; van Gemmeren, P.; van Kesteren, Z.; van Vulpen, I.; Vandelli, W.; Vandoni, G.; Vaniachine, A.; Vankov, P.; Vannucci, F.; Varela Rodriguez, F.; Vari, R.; Varnes, E. W.; Varouchas, D.; Vartapetian, A.; Varvell, K. E.; Vasilyeva, L.; Vassilakopoulos, V. I.; Vazeille, F.; Vegni, G.; Veillet, J. J.; Vellidis, C.; Veloso, F.; Veness, R.; Veneziano, S.; Ventura, A.; Ventura, D.; Venturi, M.; Venturi, N.; Vercesi, V.; Verducci, M.; Verkerke, W.; Vermeulen, J. C.; Vetterli, M. C.; Vichou, I.; Vickey, T.; Viehhauser, G. H. A.; Villa, M.; Villani, E. G.; Villaplana Perez, M.; Villate, J.; Vilucchi, E.; Vincter, M. G.; Vinek, E.; Vinogradov, V. B.; Viret, S.; Virzi, J.; Vitale, A.; Vitells, O. V.; Vivarelli, I.; Vives Vaques, F.; Vlachos, S.; Vlasak, M.; Vlasov, N.; Vogt, H.; Vokac, P.; Volpi, M.; Volpini, G.; von der Schmitt, H.; von Loeben, J.; von Radziewski, H.; von Toerne, E.; Vorobel, V.; Vorobiev, A. P.; Vorwerk, V.; Vos, M.; Voss, R.; Voss, T. T.; Vossebeld, J. H.; Vranjes, N.; Vranjes Milosavljevic, M.; Vrba, V.; Vreeswijk, M.; Vu Anh, T.; Vudragovic, D.; Vuillermet, R.; Vukotic, I.; Wagner, P.; Wahlen, H.; Walbersloh, J.; Walder, J.; Walker, R.; Walkowiak, W.; Wall, R.; Wang, C.; Wang, H.; Wang, J.; Wang, J. C.; Wang, S. M.; Ward, C. P.; Warsinsky, M.; Wastie, R.; Watkins, P. M.; Watson, A. T.; Watson, M. F.; Watts, G.; Watts, S.; Waugh, A. T.; Waugh, B. M.; Webel, M.; Weber, J.; Weber, M. D.; Weber, M.; Weber, M. S.; Weber, P.; Weidberg, A. R.; Weingarten, J.; Weiser, C.; Wellenstein, H.; Wells, P. S.; Wen, M.; Wenaus, T.; Wendler, S.; Wengler, T.; Wenig, S.; Wermes, N.; Werner, M.; Werner, P.; Werth, M.; Werthenbach, U.; Wessels, M.; Whalen, K.; Wheeler-Ellis, S. J.; Whitaker, S. P.; White, A.; White, M. J.; White, S.; Whiteson, D.; Whittington, D.; Wicek, F.; Wicke, D.; Wickens, F. J.; Wiedenmann, W.; Wielers, M.; Wienemann, P.; Wiglesworth, C.; Wiik, L. A. M.; Wildauer, A.; Wildt, M. A.; Wilhelm, I.; Wilkens, H. G.; Williams, E.; Williams, H. H.; Willis, W.; Willocq, S.; Wilson, J. A.; Wilson, M. G.; Wilson, A.; Wingerter-Seez, I.; Winklmeier, F.; Wittgen, M.; Wolter, M. W.; Wolters, H.; Wosiek, B. K.; Wotschack, J.; Woudstra, M. J.; Wraight, K.; Wright, C.; Wright, D.; Wrona, B.; Wu, S. L.; Wu, X.; Wulf, E.; Xella, S.; Xie, S.; Xie, Y.; Xu, D.; Xu, N.; Yamada, M.; Yamamoto, A.; Yamamoto, S.; Yamamura, T.; Yamanaka, K.; Yamaoka, J.; Yamazaki, T.; Yamazaki, Y.; Yan, Z.; Yang, H.; Yang, U. K.; Yang, Y.; Yang, Z.; Yao, W.-M.; Yao, Y.; Yasu, Y.; Ye, J.; Ye, S.; Yilmaz, M.; Yoosoofmiya, R.; Yorita, K.; Yoshida, R.; Young, C.; Youssef, S. P.; Yu, D.; Yu, J.; Yu, M.; Yu, X.; Yuan, J.; Yuan, L.; Yurkewicz, A.; Zaidan, R.; Zaitsev, A. M.; Zajacova, Z.; Zambrano, V.; Zanello, L.; Zarzhitsky, P.; Zaytsev, A.; Zeitnitz, C.; Zeller, M.; Zema, P. F.; Zemla, A.; Zendler, C.; Zenin, O.; Zenis, T.; Zenonos, Z.; Zenz, S.; Zerwas, D.; Zevi Della Porta, G.; Zhan, Z.; Zhang, H.; Zhang, J.; Zhang, Q.; Zhang, X.; Zhao, L.; Zhao, T.; Zhao, Z.; Zhemchugov, A.; Zheng, S.; Zhong, J.; Zhou, B.; Zhou, N.; Zhou, Y.; Zhu, C. G.; Zhu, H.; Zhu, Y.; Zhuang, X.; Zhuravlov, V.; Zilka, B.; Zimmermann, R.; Zimmermann, S.; Zimmermann, S.; Ziolkowski, M.; Zitoun, R.; Živković, L.; Zmouchko, V. V.; Zobernig, G.; Zoccoli, A.; Zur Nedden, M.; Zutshi, V.


    The ATLAS liquid argon calorimeter has been operating continuously since August 2006. At this time, only part of the calorimeter was readout, but since the beginning of 2008, all calorimeter cells have been connected to the ATLAS readout system in preparation for LHC collisions. This paper gives an overview of the liquid argon calorimeter performance measured in situ with random triggers, calibration data, cosmic muons, and LHC beam splash events. Results on the detector operation, timing performance, electronics noise, and gain stability are presented. High energy deposits from radiative cosmic muons and beam splash events allow to check the intrinsic constant term of the energy resolution. The uniformity of the electromagnetic barrel calorimeter response along η (averaged over φ) is measured at the percent level using minimum ionizing cosmic muons. Finally, studies of electromagnetic showers from radiative muons have been used to cross-check the Monte Carlo simulation. The performance results obtained using the ATLAS readout, data acquisition, and reconstruction software indicate that the liquid argon calorimeter is well-prepared for collisions at the dawn of the LHC era.

  5. Metal surface nitriding by laser induced plasma (United States)

    Thomann, A. L.; Boulmer-Leborgne, C.; Andreazza-Vignolle, C.; Andreazza, P.; Hermann, J.; Blondiaux, G.


    We study a nitriding technique of metals by means of laser induced plasma. The synthesized layers are composed of a nitrogen concentration gradient over several μm depth, and are expected to be useful for tribological applications with no adhesion problem. The nitriding method is tested on the synthesis of titanium nitride which is a well-known compound, obtained at present by many deposition and diffusion techniques. In the method of interest, a laser beam is focused on a titanium target in a nitrogen atmosphere, leading to the creation of a plasma over the metal surface. In order to understand the layer formation, it is necessary to characterize the plasma as well as the surface that it has been in contact with. Progressive nitrogen incorporation in the titanium lattice and TiN synthesis are studied by characterizing samples prepared with increasing laser shot number (100-4000). The role of the laser wavelength is also inspected by comparing layers obtained with two kinds of pulsed lasers: a transversal-excited-atmospheric-pressure-CO2 laser (λ=10.6 μm) and a XeCl excimer laser (λ=308 nm). Simulations of the target temperature rise under laser irradiation are performed, which evidence differences in the initial laser/material interaction (material heated thickness, heating time duration, etc.) depending on the laser features (wavelength and pulse time duration). Results from plasma characterization also point out that the plasma composition and propagation mode depend on the laser wavelength. Correlation of these results with those obtained from layer analyses shows at first the important role played by the plasma in the nitrogen incorporation. Its presence is necessary and allows N2 dissociation and a better energy coupling with the target. Second, it appears that the nitrogen diffusion governs the nitriding process. The study of the metal nitriding efficiency, depending on the laser used, allows us to explain the differences observed in the layer features

  6. K-Ar age of young volcanic rocks and excess argon--Binary mixing model and quantitative study of excess argon effect

    Institute of Scientific and Technical Information of China (English)


    A binary mixing model for excess argon is suggested in the note. According to this model and the data of excess argon component obtained in our experiment , a quantitative study of the effect of excess argon on real K-Ar age of young volcanic rocks is done. The result indicates that the effect of 5% excess argon component in samples on K-Ar age of the samples more than 2 Ma is less than 7.36% and can lead K-Ar age of 0.5 Ma samples to increase by 32.4%, while 1% excess argon component leads K-Ar age of 0.5 Ma samples to increase by 6.26%. Therefore, when pre-processed excess argon component is ≤1%, K-Ar age of the samples more than 0.5 Ma should be credible. On this basis we suggest a principal opinion for evaluation of previous K-Ar dating results and propose that the matrix is used to determine K-Ar age of young volcanic rocks. For the samples less than 0.2 Ma, in the case of high excess argon content, even if only 1% excess argon component exists in their matrix, it can also greatly affect their K-A age. Thus it must be careful to treat the dating result.

  7. Nitriding behavior of Ni and Ni-based binary alloys

    Energy Technology Data Exchange (ETDEWEB)

    Fonovic, Matej


    Gaseous nitriding is a prominent thermochemical surface treatment process which can improve various properties of metallic materials such as mechanical, tribological and/or corrosion properties. This process is predominantly performed by applying NH{sub 3}+H{sub 2} containing gas atmospheres serving as the nitrogen donating medium at temperatures between 673 K and 873 K (400 C and 600 C). NH{sub 3} decomposes at the surface of the metallic specimen and nitrogen diffuses into the surface adjacent region of the specimen whereas hydrogen remains in the gas atmosphere. One of the most important parameters characterizing a gaseous nitriding process is the so-called nitriding potential (r{sub N}) which determines the chemical potential of nitrogen provided by the gas phase. The nitriding potential is defined as r{sub N} = p{sub NH{sub 3}}/p{sub H{sub 2}{sup 3/2}} where p{sub NH{sub 3}} and p{sub H{sub 2}} are the partial pressures of the NH{sub 3} and H{sub 2} in the nitriding atmosphere. In contrast with nitriding of α-Fe where the nitriding potential is usually in the range between 0.01 and 1 atm{sup -1/2}, nitriding of Ni and Ni-based alloys requires employing nitriding potentials higher than 100 atm{sup -1/2} and even up to ∞ (nitriding in pure NH{sub 3} atmosphere). This behavior is compatible with decreased thermodynamic stability of the 3d-metal nitrides with increasing atomic number. Depending on the nitriding conditions (temperature, nitriding potential and treatment time), different phases are formed at the surface of the Ni-based alloys. By applying very high nitriding potential, formation of hexagonal Ni{sub 3}N at the surface of the specimen (known as external nitriding) leads to the development of a compound layer, which may improve tribological properties. Underneath the Ni{sub 3}N compound layer, two possibilities exist: (i) alloying element precipitation within the nitrided zone (known as internal nitriding) and/or (ii) development of metastable and

  8. Liquid flow cells having graphene on nitride for microscopy

    Energy Technology Data Exchange (ETDEWEB)

    Adiga, Vivekananda P.; Dunn, Gabriel; Zettl, Alexander K.; Alivisatos, A. Paul


    This disclosure provides systems, methods, and apparatus related to liquid flow cells for microscopy. In one aspect, a device includes a substrate having a first and a second oxide layer disposed on surfaces of the substrate. A first and a second nitride layer are disposed on the first and second oxide layers, respectively. A cavity is defined in the first oxide layer, the first nitride layer, and the substrate, with the cavity including a third nitride layer disposed on walls of the substrate and the second oxide layer that define the cavity. A channel is defined in the second oxide layer. An inlet port and an outlet port are defined in the second nitride layer and in fluid communication with the channel. A plurality of viewports is defined in the second nitride layer. A first graphene sheet is disposed on the second nitride layer covering the plurality of viewports.

  9. The Study of Plasma Nitriding of AISI304 Stainless Steel

    Institute of Scientific and Technical Information of China (English)

    WANG Liang; JI Shi-jun; GAO Yu-zhou; SUN Jun-cai


    This paper presents results on the plasma nitriding of AISI 304 stainless steel at different temperatures in NH 3 gas. The working pressure was 100~200 Pa and the discharge voltage was 700~800V. The phase of nitrided layer formed on the surface was confirmed by X-ray diffraction. The hardness of the samples was measured by using a Vickers microhardness tester with the load of 50g. After nitriding at about 400 ℃ for two hours a nitrided layer consisting of single γN phase with thickness of 5μm was obtained. Microhardness measurements showed significant increase in the hardness from 240 HV (for untreated samples) up to 950 HV (for nitrided samples at temperature of 420℃). The phase composition, the thickness, the microstructure and the surface topography of the nitrided layer as well as its properties depend essentially on the process parameters.

  10. Examination of Plasma Nitriding Microstructure with Addition of Rare Earths

    Institute of Scientific and Technical Information of China (English)



    Medium-carbon alloy steel was plasma nitrided with rare earths La,Ce and Nd into the nitriding chamber respectively.The nitriding layer microstructures with and without rare earths were compared using optical microscope,normal SEM and high resolution SEM,as well as TEM.It was found that the extent of the influence on plasma nitriding varies with different contents of rare earth.The effect of plasma nitriding is benefit from adding of Ce or Nd.The formation of hard and brittle phase Fe2-3N can be prevented and the butterfly-like structure can be improved by adding Ce or Nd.However,pure La may prevent the diffusion of nitrogen and the formation of iron nitride,and reduce the depth of diffusion layer.

  11. Dynamic Multiaxial Response of a Hot-Pressed Aluminum Nitride (United States)


    Dynamic Multiaxial Response of a Hot-Pressed Aluminum Nitride by Guangli Hu, C. Q. Chen, K. T. Ramesh, and J. W. McCauley ARL-RP-0487...Laboratory Aberdeen Proving Ground, MD 21005-5066 ARL-RP-0487 June 2014 Dynamic Multiaxial Response of a Hot-Pressed Aluminum Nitride...3. DATES COVERED (From - To) January 2010–January 2013 4. TITLE AND SUBTITLE Dynamic Multiaxial Response of a Hot-Pressed Aluminum Nitride 5a

  12. Wide-bandgap III-Nitride based Second Harmonic Generation (United States)


    Box 12211 Research Triangle Park, NC 27709-2211 nonlinear optics, gallium nitride , quasi-phase matching, lateral polar structures REPORT...meeting for UV Second Harmonic Generation in Aluminum Gallium Nitride semiconductors M. Hoffmann, et al, 2013 Best student paper award at the European...Materials Research Society meeting for Point defect reduction via UV illumination during growth of Aluminum Gallium Nitride Semiconductors Received

  13. Temporal evolution of electron beam generated Argon plasma in pasotron device (United States)

    Khandelwal, Neha; Pal, U. N.; Prakash, Ram; Choyal, Y.


    The plasma- assisted slow wave oscillator (PASOTRON) is a high power microwave source in which the electron beam in the interaction region is confined by the background plasma. The plasma is generated by impact ionization of background gas with the electron beam. A model has been developed for temporal evolution of Argon plasma in pasotron device. In this model, we consider electron beam of energy E interacting with Argon gas. The resulting ionization creates quasi neutral argon plasma composed of argon Ar atoms, singly ionized ions Ar+1and electrons having energy from 0 to E. Electron impact excitation, ionization, radiative decay, radiative recombination and three body recombination processes are considered in this model. Population of ground and excited states of argon atom, ground state of argon ion as well as the population of electron energy groups is calculated by solving time dependent rate equations. Temporal evolution of electron beam generated plasma is given.

  14. EXAFS investigation of low temperature nitrided stainless steel

    DEFF Research Database (Denmark)

    Oddershede, Jette; Christiansen, Thomas; Ståhl, Kenny


    Low temperature nitrided stainless steel AISI 316 flakes were investigated with EXAFS and X-ray diffraction analysis. The stainless steel flakes were transformed into a mixture of nitrogen expanded austenite and nitride phases. Two treatments were carried out yielding different overall nitrogen...... contents: (1) nitriding in pure NH3 and (2)nitriding in pure NH3 followed by reduction in H2. The majority of the Cr atoms in the stainless steel after treatment 1 and 2 was associated with a nitrogen–chromium bond distance comparable to that of the chemical compound CrN. The possibility of the occurrence...

  15. Comparative infrared study of silicon and germanium nitrides (United States)

    Baraton, M. I.; Marchand, R.; Quintard, P.


    Silicon and germanium nitride (Si 3N 4 and Ge 3N 4) are isomorphic compounds. They have been studied in the β-phase which crystallises in the hexagonal system. The space group is P6 3/m (C 6h2). The IR transmission spectra of these two nitrides are very similar but the absorption frequencies of germanium nitride are shifted to the lower values in comparison with silicon nitride. We noted that the atomic mass effect is the only cause of this shift for the streching modes but not for the bending modes.

  16. Synthesis of Uranium nitride powders using metal uranium powders

    Energy Technology Data Exchange (ETDEWEB)

    Yang, Jae Ho; Kim, Dong Joo; Oh, Jang Soo; Rhee, Young Woo; Kim, Jong Hun; Kim, Keon Sik [Korea Atomic Energy Research Institute, Daejeon (Korea, Republic of)


    Uranium nitride (UN) is a potential fuel material for advanced nuclear reactors because of their high fuel density, high thermal conductivity, high melting temperature, and considerable breeding capability in LWRs. Uranium nitride powders can be fabricated by a carbothermic reduction of the oxide powders, or the nitriding of metal uranium. The carbothermic reduction has an advantage in the production of fine powders. However it has many drawbacks such as an inevitable engagement of impurities, process burden, and difficulties in reusing of expensive N{sup 15} gas. Manufacturing concerns issued in the carbothermic reduction process can be solved by changing the starting materials from oxide powder to metals. However, in nitriding process of metal, it is difficult to obtain fine nitride powders because metal uranium is usually fabricated in the form of bulk ingots. In this study, a simple reaction method was tested to fabricate uranium nitride powders directly from uranium metal powders. We fabricated uranium metal spherical powder and flake using a centrifugal atomization method. The nitride powders were obtained by thermal treating those metal particles under nitrogen containing gas. We investigated the phase and morphology evolutions of powders during the nitriding process. A phase analysis of nitride powders was also a part of the present work.

  17. Effects of argon gas flow rate and guide shell on oxygen concentration in Czochralski silicon growth

    Institute of Scientific and Technical Information of China (English)


    φ200 mm silicon single crystals were grown in the φ450 mm hot zone of a Czochralski (CZ) furnace. By modifying the pattern and the velocity of the argon flow, the silicon single crystals with different oxygen concentrations were obtained. Through numerical simulation, the velocity of the argon gas flow was plotted for the first time. The experiment results were analyzed and the optimum condition of the argon flow with the lowest oxygen concentration was obtained.

  18. Thermodynamic ground states of platinum metal nitrides

    Energy Technology Data Exchange (ETDEWEB)

    Aberg, D; Sadigh, B; Crowhurst, J; Goncharov, A


    We have systematically studied the thermodynamic stabilities of various phases of the nitrides of the platinum metal elements using density functional theory. We show that for the nitrides of Rh, Pd, Ir and Pt two new crystal structures, in which the metal ions occupy simple tetragonal lattice sites, have lower formation enthalpies at ambient conditions than any previously proposed structures. The region of stability can extend up to 17 GPa for PtN{sub 2}. Furthermore, we show that according to calculations using the local density approximation, these new compounds are also thermodynamically stable at ambient pressure and thus may be the ground state phases for these materials. We further discuss the fact that the local density and generalized gradient approximations predict different values of the absolute formation enthalpies as well different relative stabilities between simple tetragonal and the pyrite or marcasite structures.

  19. Sheath Characteristic in ECR Plasma Nitriding

    Institute of Scientific and Technical Information of China (English)


    The sheath plasma characteristics changing with the negative bias applied to the substrate during electron cyclotron resonance plasma nitriding are studied. The sheath characteristics obtained by a Langmuir single probe and an ion energy analyzer show that when the negative bias applied to the substrate is increasing, the most probable energy of ions in the sheath and the full width of half maximum of ions energy distribution increase, the thickness of the sheath also increases, whereas the saturation current of ion decreases. It has been found from the optical emission spectrum that there are strong lines of N2 and N2+. Based on our experiment results the mechanism of plasma nitriding is discussed.

  20. Thermodynamics, kinetics and process control of nitriding

    DEFF Research Database (Denmark)

    Mittemeijer, Eric J.; Somers, Marcel A. J.


    As a prerequisite for the predictability of properties obtained by a nitriding treatment of iron based workpieces, the relation between the process parameters and the composition and structure of the surface layer produced must be known. At present, even the description of thermodynamic equilibrium...... of pure Fe-N phases has not been fully achieved. It is shown that taking into account the ordering of nitrogen in the epsilon and gamma' iron nitride phases leads to an improved understanding of the Fe-N phase diagram. Although consideration of thermodynamics indicates the state the system strives for...... of the International Federation for Heat Treatment and Surface Engineering held in Brighton, UK on 1-5 September 1996. (C) 1997 The Institute of Materials....

  1. Aluminum Reduction and Nitridation of Bauxite

    Institute of Scientific and Technical Information of China (English)

    ZHANG Zhikuan; ZHANG Dianwei; XU Enxia; HOU Xinmei; DONG Yanling


    The application of bauxite with low Al2O3 content has been studied in this paper and β-SiAlON has been obtained from two kinds of bauxites (Al203 content 68.08 mass% and 46.30 mass% respectively) by aluminum reduction and nitridation method.The sequence of reactions has been studied using thermal analysis (TG-DTA),X-ray diffraction (XRD) analysis and scanning electron microscopy (SEM) with EDS.Compared with carbon thermal reduction and nitridation of aluminosilicates employed presently,the reaction in the system of bauxite-Al-N2 occurs at lower temperature.β-SiAlON appears as one of the main products from 1573K and exists' stably in the range of the present experimental temperature.The microstructure of β-SiAlON obtained at 1773 K is short column with 5-10μm observed by SEM.

  2. Group-III Nitride Field Emitters (United States)

    Bensaoula, Abdelhak; Berishev, Igor


    Field-emission devices (cold cathodes) having low electron affinities can be fabricated through lattice-mismatched epitaxial growth of nitrides of elements from group III of the periodic table. Field emission of electrons from solid surfaces is typically utilized in vacuum microelectronic devices, including some display devices. The present field-emission devices and the method of fabricating them were developed to satisfy needs to reduce the cost of fabricating field emitters, make them compatible with established techniques for deposition of and on silicon, and enable monolithic integration of field emitters with silicon-based driving circuitry. In fabricating a device of this type, one deposits a nitride of one or more group-III elements on a substrate of (111) silicon or other suitable material. One example of a suitable deposition process is chemical vapor deposition in a reactor that contains plasma generated by use of electron cyclotron resonance. Under properly chosen growth conditions, the large mismatch between the crystal lattices of the substrate and the nitride causes strains to accumulate in the growing nitride film, such that the associated stresses cause the film to crack. The cracks lie in planes parallel to the direction of growth, so that the growing nitride film becomes divided into microscopic growing single-crystal columns. The outer ends of the fully-grown columns can serve as field-emission tips. By virtue of their chemical compositions and crystalline structures, the columns have low work functions and high electrical conductivities, both of which are desirable for field emission of electrons. From examination of transmission electron micrographs of a prototype device, the average column width was determined to be about 100 nm and the sharpness of the tips was determined to be characterized by a dimension somewhat less than 100 nm. The areal density of the columns was found to about 5 x 10(exp 9)/sq cm . about 4 to 5 orders of magnitude

  3. Numerical investigation of sputtering power effect on nano-tribological properties of tantalum-nitride film using molecular dynamics simulation (United States)

    Firouzabadi, S. S.; Dehghani, K.; Naderi, M.; Mahboubi, F.


    In the present work, surface profile of tantalum-nitride films, deposited with different sputtering power is analyzed using atomic force microscopy (AFM) in order to find out the effect of sputtering power density on the surface properties. In this regard, micron size tantalum nitride films were deposited using reactive magnetron sputtering system with sputtering power density of 1.5-3 W/cm2 in argon environment mixed with nitrogen. The process was then simulated numerically using molecular dynamics simulation (MD) and Morse interatomic potential in order to study the mechanism of surface roughness variation with sputtering power. According to experimental results, with increasing the sputtering power density from 1.5 to 3, the surface roughness decreased at first followed by an increase. The reason of this behavior was investigated using MD simulation. In this regard, the effect of sputtering power was attributed into two different phenomena: (i) the deposition rate and (ii) the incident-atom energy. Simulation was performed at different deposition rates from 33 to 666 atoms/ps and different sputtered atom energies from .31 to 7.67 eV. It is found that increasing the incident-atom energy causes the atoms to move along the surface and reduces the surface roughness. In contrast, increasing the deposition rate restricted the surface mobility of atoms and roughened the surface. It is also indicated that an increase in the sputtering power cannot increase the adatoms kinetic energy continuously and so the surface diffusion of atoms. Therefore, there is an optimum value for minimum roughness of surface in sputter deposition of tantalum-nitride films which is in agreement with simulation findings.

  4. New nanoforms of carbon and boron nitride

    Energy Technology Data Exchange (ETDEWEB)

    Pokropivny, V V [Institute for Problems of Materials Science of National Academy of Sciences of Ukraine (Ukraine); Ivanovskii, A L [Institute of Solid State Chemistry, Urals Branch of the Russian Academy of Sciences, Ekaterinburg (Russian Federation)], e-mail:


    Data on new carbon nanostructures including those based on fullerenes, nanotubes as well monolithic diamond-like nanoparticles, nanofibres, various nanocomposites, etc., published in the last decade are generalised. The experimental and theoretical data on their atomic and electronic structures, the nature of chemical bonds and physicochemical properties are discussed. These data are compared with the results obtained in studies of nanoforms of boron nitride, an isoelectronic analogue of carbon. Potential fields of applications of the new nanostructures are considered.

  5. New nanoforms of carbon and boron nitride (United States)

    Pokropivny, V. V.; Ivanovskii, A. L.


    Data on new carbon nanostructures including those based on fullerenes, nanotubes as well monolithic diamond-like nanoparticles, nanofibres, various nanocomposites, etc., published in the last decade are generalised. The experimental and theoretical data on their atomic and electronic structures, the nature of chemical bonds and physicochemical properties are discussed. These data are compared with the results obtained in studies of nanoforms of boron nitride, an isoelectronic analogue of carbon. Potential fields of applications of the new nanostructures are considered.

  6. Formation and Structure of Boron Nitride Nanotubes

    Institute of Scientific and Technical Information of China (English)

    Jiang ZHANG; Zongquan LI; Jin XU


    Boron nitride (BN) nanotubes were simply synthesized by heating well-mixed boric acid, urea and iron nitrate powders at 1000℃. A small amount of BN nanowires was also obtained in the resultants. The morphological and structural characters of the BN nanostructures were studied using transmission electron microscopy. Other novel BN nanostructures, such as Y-junction nanotubes and bamboo-like nanotubes, were simultaneously observed. The growth mechanism of the BN nanotubes was discussed briefly.

  7. Amorphous Carbon-Boron Nitride Nanotube Hybrids (United States)

    Kim, Jae Woo (Inventor); Siochi, Emilie J. (Inventor); Wise, Kristopher E. (Inventor); Lin, Yi (Inventor); Connell, John (Inventor)


    A method for joining or repairing boron nitride nanotubes (BNNTs). In joining BNNTs, the nanotube structure is modified with amorphous carbon deposited by controlled electron beam irradiation to form well bonded hybrid a-C/BNNT structures. In repairing BNNTs, the damaged site of the nanotube structure is modified with amorphous carbon deposited by controlled electron beam irradiation to form well bonded hybrid a-C/BNNT structures at the damage site.

  8. Silicon Nitride Antireflection Coatings for Photovoltaic Cells (United States)

    Johnson, C.; Wydeven, T.; Donohoe, K.


    Chemical-vapor deposition adapted to yield graded index of refraction. Silicon nitride deposited in layers, refractive index of which decreases with distance away from cell/coating interface. Changing index of refraction allows adjustment of spectral transmittance for wavelengths which cell is most effective at converting light to electric current. Average conversion efficiency of solar cells increased from 8.84 percent to 12.63 percent.

  9. Oxygen radical functionalization of boron nitride nanosheets


    MAY, PETER; Coleman, Jonathan; MCGOVERN, IGNATIUS; GOUNKO, IOURI; Satti, Amro


    PUBLISHED The covalent chemical functionalization of exfoliated hexagonal boron-nitride nanosheets (BNNSs) is achieved by the solution phase oxygen radical functionalization of boron atoms in the h-BN lattice. This involves a two-step procedure to initially covalently graft alkoxy groups to boron atoms and the subsequent hydrolytic defunctionalisation of the groups to yield hydroxyl-functionalized BNNSs (OH-BNNSs). Characterization of the functionalized-BNNSs using HR-TEM, Raman, UV-Vis, F...

  10. Silicon Nitride Balls For Cryogenic Bearings (United States)

    Butner, Myles F.; Ng, Lillian W.


    Resistance to wear greater than that of 440C steel. Experiments show lives of ball bearings immersed in liquid nitrogen or liquid oxygen increased significantly when 440C steel balls (running on 440C steel races) replaced by balls of silicon nitride. Developed for use at high temperatures, where lubrication poor or nonexistent. Best wear life of any bearing tested to date and ball material spalls without fracturing. Plans for future tests call for use of liquid oxygen as working fluid.

  11. Influence of argon laser curing on resin bond strength. (United States)

    Hinoura, K; Miyazaki, M; Onose, H


    Light cured resin composites are usually cured with halogen lamps whose light output decreases with time and distance to the resin surface. This study compared bond strengths of resins to tooth structure cured with either an argon laser or a conventional halogen light. The enamel and dentin of bovine incisors were ground on the buccal surface with wet #600 grit SiC paper. A 4 x 2 mm mold was placed on the tooth surface and Scotchbond 2/Silux and Clearfil Photobond/Photo Clearfil A were placed into the molds and cured using a Quick Light or an argon laser for exposure times of 10, 20, and 30 seconds, and distances of 0.0, 0.5, 1.0, and 1.5 mm from the resin surface. The intensity of the Quick Light was measured as 510 mW/cm2 at 470 +/- 15 nm and the intensity of the argon laser was adjusted to 510 mW/cm2 before curing. Shear bond tests at a crosshead speed of 1.0 mm/min were performed after 24 hours of storage in water. The bond strengths obtained with the halogen lamp and the laser were not significantly different at the same exposure times and at 0.0 or 0.5 mm from the resin surface. The laser cured bond strengths did not decrease with increasing distance whereas there was a significant decrease in halogen bond strengths at distances greater than 0.5 mm for both resins. The use of the laser might provide a clinical advantage in cases where the curing light source cannot be brought into proximity to the surface of the resin.

  12. Wetting and infiltration of nitride bonded silicon nitride by liquid silicon (United States)

    Schneider, V.; Reimann, C.; Friedrich, J.


    Nitride bonded silicon nitride (NBSN) is a promising crucible material for the repeated use in the directional solidification of multicrystalline (mc) silicon ingots for photovoltaic applications. Due to wetting and infiltration, however, silicon nitride in its initial state does not offer the desired reusability. In this work the sessile drop method is used to systematically study the wetting and infiltration behavior of NBSN after applying different oxidation procedures. It is found that the wetting of the NBSN crucible by liquid silicon can be prevented by the oxidation of the geometrical surface. The infiltration of liquid silicon into the porous crucible can be suppressed by oxygen enrichment within the volume of the NBSN, i.e. at the pore walls of the crucibles. The realized reusability of the NBSN is demonstrated by reusing a NBSN crucible six times for the directional solidification of undoped multicrystalline silicon ingots.

  13. Effects of argon flow on impurities transport in a directional solidification furnace for silicon solar cells (United States)

    Li, Zaoyang; Liu, Lijun; Ma, Wencheng; Kakimoto, Koichi


    A global simulation including coupled oxygen and carbon transport was carried out to study the argon flow effects on the impurities transport in a directional solidification furnace for silicon solar cells. The simulation is based on a fully coupled calculation of the thermal and flow fields in a furnace including argon gas flow and melt convection. Five chemical reactions are considered in the impurity transport model. The effects of both the argon flow rate and the furnace pressure were examined. It was found that the argon flow has an important effect on the silicon melt convection, which will further influence the evaporation characteristic of SiO at the melt free surface. The amount of SiO carried away by the argon flow increases with increase in the argon flow rate while the CO gas can be prevented from being transported to the melt free surface. There exists a peak value for the concentration of impurities in the furnace chamber regarding argon flow rate due to the correlation among SiO evaporated, reacted and taken away. The pressure also influences the impurity transport in the furnace by modifying the pattern of argon flow. The numerical results demonstrate a method to control the oxygen and carbon transport in a directional solidification furnace by adjusting the argon flow rate and the furnace pressure.

  14. Fusion bonding of silicon nitride surfaces

    DEFF Research Database (Denmark)

    Reck, Kasper; Østergaard, Christian; Thomsen, Erik Vilain


    While silicon nitride surfaces are widely used in many micro electrical mechanical system devices, e.g. for chemical passivation, electrical isolation or environmental protection, studies on fusion bonding of two silicon nitride surfaces (Si3N4–Si3N4 bonding) are very few and highly application...... specific. Often fusion bonding of silicon nitride surfaces to silicon or silicon dioxide to silicon surfaces is preferred, though Si3N4–Si3N4 bonding is indeed possible and practical for many devices as will be shown in this paper. We present an overview of existing knowledge on Si3N4–Si3N4 bonding and new...... results on bonding of thin and thick Si3N4 layers. The new results include high temperature bonding without any pretreatment, along with improved bonding ability achieved by thermal oxidation and chemical pretreatment. The bonded wafers include both unprocessed and processed wafers with a total silicon...

  15. Gallium nitride based logpile photonic crystals. (United States)

    Subramania, Ganapathi; Li, Qiming; Lee, Yun-Ju; Figiel, Jeffrey J; Wang, George T; Fischer, Arthur J


    We demonstrate a nine-layer logpile three-dimensional photonic crystal (3DPC) composed of single crystalline gallium nitride (GaN) nanorods, ∼100 nm in size with lattice constants of 260, 280, and 300 nm with photonic band gap in the visible region. This unique GaN structure is created through a combined approach of a layer-by-layer template fabrication technique and selective metal organic chemical vapor deposition (MOCVD). These GaN 3DPC exhibit a stacking direction band gap characterized by strong optical reflectance between 380 and 500 nm. By introducing a "line-defect" cavity in the fifth (middle) layer of the 3DPC, a localized transmission mode with a quality factor of 25-30 is also observed within the photonic band gap. The realization of a group III nitride 3DPC with uniform features and a band gap at wavelengths in the visible region is an important step toward realizing complete control of the electromagnetic environment for group III nitride based optoelectronic devices.

  16. Kinetic modeling of the Townsend breakdown in argon (United States)

    Macheret, S. O.; Shneider, M. N.


    Kinetic modeling of the Townsend breakdown in argon was performed in the "forward-back" approximation. The kinetic model was found to adequately describe the left branch of the Paschen curve, and the important role of ionization by fast ions and atoms near the cathode, as well as the increase in secondary emission coefficient in strong electric fields described in the literature, was confirmed. The modeling also showed that the electron energy distribution function develops a beam of high-energy electrons and that the runaway effect, i.e., the monotonic increase of the mean electron energy with the distance from the cathode, occurs at the left branch of the Paschen curve.

  17. Large Area Pico-second Photodetectors (LAPPD) in Liquid Argon (United States)

    Dharmapalan, Ranjan; Lappd Collaboration


    The Large Area Pico-second Photodetector (LAPPD) project has recently produced the first working devices with a small form factor and pico-second timing resolution. A number of current and proposed neutrino and dark matter experiments use liquid argon as a detector medium. A flat photodetector with excellent timing resolution will help with background suppression and improve the overall sensitivity of the experiment. We present the research done and some preliminary results to customize the LAPPD devices to work in a cryogenic environment. Argonne National Laboratory (LDRD) and DOE.

  18. Optical fiber read-out for liquid argon scintillation light

    CERN Document Server

    Csáthy, J Janicskó; Kratz, J; Schönert, S; Wiesinger, Ch


    In this paper we describe the performance of a light detector for Ar scintillation light made of wavelength-shifting (WLS) fibers connected to Silicon-Photomultipliers (SiPM). The setup was conceived to be used as anti-Compton veto for high purity germanium (HPGe) detectors operated directly in liquid Argon (LAr). Background suppression efficiencies for different radioactive sources were measured in a test cryostat with about 800 kg LAr. This work was part of the R\\&D effort for the GERDA experiment.

  19. Dimerization of argon and the properties of its small clusters (United States)

    Titov, S. V.; Serov, S. A.; Ostrovskii, G. M.


    Statistical thermodynamic means are used to study the bound state of a small cluster AN (2 ≤ N ≤ 5) of Lennard-Jones particles in a spherical cavity. The statistical sum is calculated by the Monte Carlo method. For the dimer, integration is reduced to quadratures. The integration region contains only phase space points corresponding to the bound cluster state. Dimerization constant 2A = A2 is calculated via the probability of finding a molecule in the bound state using the example of argon.

  20. The abundances of neon, sulfur, and argon in planetary nebulae (United States)

    Beck, S. C.; Lacy, J. H.; Townes, C. H.; Aller, L. H.; Geballe, T. R.; Baas, F.


    New infrared observations of Ne II, Ar III, and S IV are used in optical observations of other ionization states of the considered elements to evaluate the abundances of neon, argon, and sulfur in 18 planetary nebulae. Attention is also given to one or more of the infrared lines in 18 other nebulae. It is pointed out that S IV was detected in approximately 90% of the observed objects, while Ar III was found in about 80%, and Ne II in roughly one-third. It is noted that optical observations typically include only a limited region of the nebula, while the infrared measurements frequently involve integration over the entire nebular image.

  1. Liquid Argon TPC Signal Formation, Signal Processing and Hit Reconstruction

    Energy Technology Data Exchange (ETDEWEB)

    Baller, Bruce [Fermilab


    This document describes the early stage of the reconstruction chain that was developed for the ArgoNeuT and MicroBooNE experiments at Fermilab. These experiments study accelerator neutrino interactions that occur in a Liquid Argon Time Projection Chamber. Reconstructing the properties of particles produced in these interactions requires knowledge of the micro-physics processes that affect the creation and transport of ionization electrons to the readout system. A wire signal deconvolution technique was developed to convert wire signals to a standard form for hit reconstruction, to remove artifacts in the electronics chain and to remove coherent noise.

  2. Electrical and spectroscopic characterization of a surgical argon plasma discharge (United States)

    Keller, Sandra; Bibinov, Nikita; Neugebauer, Alexander; Awakowicz, Peter


    For electrosurgical procedures, the argon plasma coagulation (APC) discharge is a well-established atmospheric-pressure plasma tool for thermal haemostasis and devitalization of biological tissue. To characterize this plasma source, voltage-current measurements, microphotography, optical emission spectroscopy and numerical simulation are applied. Two discharge modes are established during the operation of the APC plasma source. A short transient spark discharge is ignited within the positive half period of the applied high voltage after a streamer channel connects the APC probe and the counter-electrode. During the second phase, which continues under negative high voltage, a glow discharge is stabilized in the plasma channel.

  3. Study of a Novel Concept for a Liquid Argon Calorimeter \

    CERN Multimedia


    % RD33 \\\\ \\\\ The development of a fast, highly granular and compact electromagnetic liquid argon calorimeter prototype is proposed as a generic R\\&D project for a novel concept of calorimetry in proton-proton and electron-positron collider detectors: the $^{\\prime$Thin Gap Turbine$^{\\prime}$ (TGT). The TGT calorimeter has a modular construction, is flexible in its longitudinal and transverse granularity, and offers a uniform energy response and resolution, independent of the production angle of incident particles. An important aspect of the project is the development of fast, radiation-hard front-end electronics which is operating in the cold.

  4. Control of Defects in Aluminum Gallium Nitride ((Al)GaN) Films on Grown Aluminum Nitride (AlN) Substrates (United States)


    like HEMTs . A nanolayer of AlGaN over GaN provides extra 2DEG charge density because of the piezoelectric effect of the AlGaN layer. The higher...Control of Defects in Aluminum Gallium Nitride ((Al) GaN ) Films on Grown Aluminum Nitride (AlN) Substrates by Iskander G. Batyrev, Chi-Chin Wu...Aluminum Gallium Nitride ((Al) GaN ) Films on Grown Aluminum Nitride (AlN) Substrates Iskander G. Batyrev and N. Scott Weingarten Weapons and

  5. Development of compound layer of iron (carbo)nitrides during nitriding of steel

    DEFF Research Database (Denmark)

    Ratajski, J.; Tacikowski, J.; Somers, Marcel A.J.


    The composition and phase constitution of a compound layer developing during gaseous nitriding was investigated at 853 K for three commercial steels (AISI 120, 4340 and 1090) and Armco iron. The compound layers were characterised by light optical microscopy, X-ray diffraction and electron probe...... microanalysis. The formation of the compound layer occurs along two distinct sequences: alpha-gamma prime-epsilon and/or alpha(theta)-epsilon2-gamma prime-epsilon1. The preferred sequence depends mainly on the chemical composition of steel and on the nitriding potential....

  6. Monte Carlo simulation of electron back diffusion in argon (United States)

    Radmilović, M.; Stojanović, V.; Petrović, Z. Lj.


    Monte Carlo simulation was applied to study the back-diffusion of electrons in argon at low and moderate values of E/N from 10Td to 10 kTd. Simulations were performed for gaps of 1 cm and for pressures corresponding to the breakdown voltages taken from experimental Paschen curves. Effects of inelastic collisions, ionization, reflection of electrons and anisotropic scattering as well as anisotropic initial and reflected angular distributions of electrons were included. A complete and detailed set of electron scattering cross sections that describes well electron transport in argon was used. We found a very good agreement of the results of simulations with the experimental data for well defined initial conditions, and with several models available in the literature.(A.V. Phelps and Z.LJ. Petrović), Plasma Sources Sci. Tehnol. 8, R21 (1999). While effect of reflection may be large, for realistic values of reflection coefficient and for realistic secondary electron productions the effect may be neglected for the accuracy required in gas discharge modeling.

  7. Converging of Argon Cluster Ion Beams with a Glass Capillary (United States)

    Shoji, Kazuhiro; Iuchi, Kensuke; Izumi, Motoki; Moritani, Kousuke; Inui, Norio; Mochiji, Kozo

    We have investigated the converging behavior of argon gas cluster ion beam passed through a glass capillary. The gas cluster ions are attractive as a projectile for SIMS from the view point of minimization of the damages. The cluster ion beam of 5 keV consisting of 500˜3000 argon atoms was injected in the capillary. The inner diameters of the capillary at the inlet and outlet were 0.8 mm and 9.6˜140 μm, respectively. Ion current from the outlet of the all the capillaries were detected. We obtained the converging factor of 2˜7, which depended on the incident ion current. The kinetic energy of the incident ions was found to be reduced by 20˜30% by passing through the capillary. Contrary, the velocity of the ions was not changed. These facts suggest that the cluster becomes 20˜30% smaller in mass by passing through the capillary. As far as we know, this is the first report on the study of the converging of cluster ions by using a glass capillary.

  8. Vertical III-nitride thin-film power diode

    Energy Technology Data Exchange (ETDEWEB)

    Wierer, Jr., Jonathan; Fischer, Arthur J.; Allerman, Andrew A.


    A vertical III-nitride thin-film power diode can hold off high voltages (kV's) when operated under reverse bias. The III-nitride device layers can be grown on a wider bandgap template layer and growth substrate, which can be removed by laser lift-off of the epitaxial device layers grown thereon.

  9. Low temperature gaseous nitriding and carburising of stainless steel

    DEFF Research Database (Denmark)

    Christiansen, Thomas; Somers, Marcel A.J.


    The response of various austenitic and duplex stainless steel grades to low temperature gaseous nitriding and carburising was investigated. Gaseous nitriding was performed in ammonia/hydrogen mixtures at temperatures ,723 K; gaseous carburising was carried out in carbon monoxide/hydrogen mixtures...

  10. New amorphous interface for precipitate nitrides in steel

    DEFF Research Database (Denmark)

    Danielsen, Hilmar Kjartansson; Kadkhodazadeh, Shima; Grumsen, Flemming Bjerg;


    during electron beam exposure. The amorphous shells were observed around Ta- and Nb-based nitrides, which are considered to have a high interfacial energy with the ferrite matrix. They were not observed around V-based nitrides which have a Baker–Nutting relationship with low-misfit to the matrix....

  11. Modeling the kinetics of the nitriding and nitrocarburizing of iron

    DEFF Research Database (Denmark)

    Somers, Marcel A. J.; Mittemeijer, Eric J.


    The growth kinetics of the iron-nitride compound layer during nitriding and nitrocarburizing of pure iron has been investigated for various temperatures and various combinations of imposed nitrogen and carbon activities. The results indicate that no local equilibrium occurs at the gas/solid inter...

  12. Phase diagrams and synthesis of cubic boron nitride

    CERN Document Server

    Turkevich, V Z


    On the basis of phase equilibria, the lowest temperatures, T sub m sub i sub n , above which at high pressures cubic boron nitride crystallization from melt solution is allowable in terms of thermodynamics have been found for a number of systems that include boron nitride.

  13. Nitrogen ion irradiation of Au(110) : formation of gold nitride

    NARCIS (Netherlands)

    Šiller, L.; Hunt, M.R.C.; Brown, J.W.; Coquel, J-M.; Rudolf, P.


    Often metal nitrides posses unique properties for applications, such as great hardness, high melting points, chemical stability, novel electrical and magnetic properties. One route to the formation of metal nitride films is through ion irradiation of metal surfaces. In this report, the results of ir

  14. Continuous and discontinuous precipitation in Fe-1 at.%Cr-1 at.%Mo alloy upon nitriding; crystal structure and composition of ternary nitrides (United States)

    Steiner, Tobias; Ramudu Meka, Sai; Rheingans, Bastian; Bischoff, Ewald; Waldenmaier, Thomas; Yeli, Guma; Martin, Tomas L.; Bagot, Paul A. J.; Moody, Michael P.; Mittemeijer, Eric J.


    The internal nitriding response of a ternary Fe-1 at.%Cr-1 at.%Mo alloy, which serves as a model alloy for many CrMo-based steels, was investigated. The nitrides developing upon nitriding were characterised by X-ray diffraction, scanning electron microscopy, electron probe microanalysis, transmission electron microscopy and atom probe tomography. The developed nitrides were shown to be (metastable) ternary mixed nitrides, which exhibit complex morphological, compositional and structural transformations as a function of nitriding time. Analogous to nitrided binary Fe-Cr and Fe-Mo alloys, in ternary Fe-Cr-Mo alloys initially continuous precipitation of fine, coherent, cubic, NaCl-type nitride platelets, here with the composition (Cr½,Mo½)N¾, occurs, with the broad faces of the platelets parallel to the {1 0 0}α-Fe lattice planes. These nitrides undergo a discontinuous precipitation reaction upon prolonged nitriding leading to the development of lamellae of a novel, hexagonal CrMoN2 nitride along {1 1 0}α-Fe lattice planes, and of spherical cubic, NaCl-type (Cr,Mo)Nx nitride particles within the ferrite lamellae. The observed structural and compositional changes of the ternary nitrides have been attributed to the thermodynamic and kinetic constraints for the internal precipitation of (misfitting) nitrides in the ferrite matrix.

  15. Epitaxial aluminum nitride tunnel barriers grown by nitridation with a plasma source

    NARCIS (Netherlands)

    Zijlstra, T.; Lodewijk, C.F.J.; Vercruyssen, N.; Tichelaar, F.D.; Loudkov, D.N.; Klapwijk, T.M.


    High critical current-density (10 to 420 kA/cm2) superconductor-insulator-superconductor tunnel junctions with aluminum nitride barriers have been realized using a remote nitrogen plasma from an inductively coupled plasma source operated in a pressure range of 10−3–10−1 mbar. We find a much better r

  16. Low Temperature Gaseous Nitriding of a Stainless Steel Containing Strong Nitride Formers

    DEFF Research Database (Denmark)

    Fernandes, Frederico Augusto Pires; Christiansen, Thomas Lundin; Somers, Marcel A. J.

    Low temperature thermochemical surface hardening of the precipitation hardening austenitic stainless steel A286 in solution treated state was investigated. A286 contains, besides high amounts of Cr, also substantial amounts of strong nitride formers as Ti, Al and V. It is shown that simultaneous ...

  17. Towards a liquid Argon TPC without evacuation filling of a 6$m^3$ vessel with argon gas from air to ppm impurities concentration through flushing

    CERN Document Server

    Curioni, A; Gendotti, A; Knecht, L; Lussi, D; Marchionni, A; Natterer, G; Resnati, F; Rubbia, A; Coleman, J; Lewis, M; Mavrokoridis, K; McCormick, K; Touramanis, C


    In this paper we present a successful experimental test of filling a volume of 6 $m^3$ with argon gas, starting from normal ambient air and reducing the impurities content down to few parts per million (ppm) oxygen equivalent. This level of contamination was directly monitored measuring the slow component of the scintillation light of the Ar gas, which is sensitive to $all$ sources of impurities affecting directly the argon scintillation.

  18. Ful distil ation argon producing crud argon column on operating experience%全精馏制氩粗氩塔操作经验浅谈

    Institute of Scientific and Technical Information of China (English)



    This paper briefly introduces the ful distil ation argon recovery process in the crude argon column in air separation system of cooling,heating and put some matters needing attention in use.%简要介绍了全精馏制氩过程中粗氩塔在空分系统降温、升温及投用中的一些注意事项。

  19. Design of nitride semiconductors for solar energy conversion

    Energy Technology Data Exchange (ETDEWEB)

    Zakutayev, Andriy


    Nitride semiconductors are a promising class of materials for solar energy conversion applications, such as photovoltaic and photoelectrochemical cells. Nitrides can have better solar absorption and electrical transport properties than the more widely studied oxides, as well as the potential for better scalability than other pnictides or chalcogenides. In addition, nitrides are also relatively unexplored compared to other chemistries, so they provide a great opportunity for new materials discovery. This paper reviews the recent advances in the design of novel semiconducting nitrides for solar energy conversion technologies. Both binary and multinary nitrides are discussed, with a range of metal chemistries (Cu3N, ZnSnN2, Sn3N4, etc.) and crystal structures (delafossite, perovskite, spinel, etc.), including a brief overview of wurtzite III-N materials and devices. The current scientific challenges and promising future directions in the field are also highlighted.

  20. Facile Solid-State Synthesis Route to Metal Nitride Nanoparticles

    Institute of Scientific and Technical Information of China (English)

    Yinxiao DU; Ming LEI; Hui YANG


    By a facile and efficient solid-state reaction route using an organic reagent cyanamide (CN2H2) as a precursor with another one being metal oxides, we successfully synthesized seven technologically important metal nitrides including cubic VN, CrN, NbN, hexagonal GaN, AIN, BN, and WN at moderate temperatures. The experimental results show that cyanamide (CN2H2) is a powerfully reducing and nitridizing reagent and the metal oxides are completely converted into the corresponding nitride nanoparticles at lower temperatures than that reported in the conventional methods. It is found that CN2H2 can exhibit some interesting condensation processes, and the final products, highly active carbon nitride species, play a crucial role in the reducing and nitridizing processes.

  1. Safety Assessment of Boron Nitride as Used in Cosmetics. (United States)

    Fiume, Monice M; Bergfeld, Wilma F; Belsito, Donald V; Hill, Ronald A; Klaassen, Curtis D; Liebler, Daniel C; Marks, James G; Shank, Ronald C; Slaga, Thomas J; Snyder, Paul W; Andersen, F Alan


    The Cosmetic Ingredient Review Expert Panel (Panel) assessed the safety of boron nitride which functions in cosmetics as a slip modifier (ie, it has a lubricating effect). Boron nitride is an inorganic compound with a crystalline form that can be hexagonal, spherical, or cubic; the hexagonal form is presumed to be used in cosmetics. The highest reported concentration of use of boron nitride is 25% in eye shadow formulations. Although boron nitride nanotubes are produced, boron nitride is not listed as a nanomaterial used in cosmetic formulations. The Panel reviewed available chemistry, animal data, and clinical data and concluded that this ingredient is safe in the present practices of use and concentration in cosmetic formulations.

  2. Local Heating with Lithographically Fabricated Plasmonic Titanium Nitride Nanoparticles

    DEFF Research Database (Denmark)

    Guler, Urcan; Ndukaife, Justus C.; Naik, Gururaj V.;


    Titanium nitride is considered a promising alternative plasmonic material and is known to exhibit localized surface plasmon resonances within the near-infrared biological transparency window. Here, local heating efficiencies of disk-shaped nanoparticles made of titanium nitride and gold are compa......Titanium nitride is considered a promising alternative plasmonic material and is known to exhibit localized surface plasmon resonances within the near-infrared biological transparency window. Here, local heating efficiencies of disk-shaped nanoparticles made of titanium nitride and gold...... are compared in the visible and near-infrared regions numerically and experimentally with samples fabricated using e-beam lithography. Results show that plasmonic titanium nitride nanodisks are efficient local heat sources and outperform gold nanodisks in the biological transparency window, dispensing the need...... for complex particle geometries....

  3. Gaseous Nitriding Process of Surface Nanocrystallized (SNCed) Steel

    Institute of Scientific and Technical Information of China (English)


    The behavior of gaseous nitriding on the surface nanocrystallized (SNCed) steel was investigated. The mild steel discs were SNCed on one side by using the method of ultrasonic shot peening. The opposite side of the discs maintained the original coarse-grained condition. The gaseous nitriding was subsequently carried out at three different temperatures:460, 500 and 560℃. The compound layer growth and diffusion behavior were then studied. It was revealed that SNC pretreatment greatly enhances both diffusion coefficient D and surface reaction rate. As a result, nitriding time could be reduced to the half. It was also found that the growth of compound layer with nitriding time conformed with parabolic relationship from the start of nitriding process in the SNCed samples.

  4. Study of electron recombination in liquid argon with the ICARUS TPC

    Energy Technology Data Exchange (ETDEWEB)

    Amoruso, S.; Antonello, M.; Aprili, P.; Arneodo, F.; Badertscher, A.; Baiboussinov, B.; Baldo Ceolin, M.; Battistoni, G.; Bekman, B.; Benetti, P.; Bischofberger, M.; Borio di Tigliole, A.; Brunetti, R.; Bruzzese, R.; Bueno, A.; Buzzanca, M.; Calligarich, E.; Campanelli, M.; Carbonara, F.; Carpanese, C.; Cavalli, D.; Cavanna, F.; Cennini, P.; Centro, S.; Cesana, A.; Chen, C.; Chen, D.; Chen, D.B.; Chen, Y.; Cieslik, K.; Cline, D.; Cocco, A.G.; Dai, Z.; De Vecchi, C.; Dabrowska, A.; Di Cicco, A.; Dolfini, R.; Ereditato, A.; Felcini, M.; Ferrari, A.; Ferri, F.; Fiorillo, G.; Galli, S.; Ge, Y.; Gibin, D.; Gigli Berzolari, A.; Gil-Botella, I.; Graczyk, K.; Grandi, L.; Guglielmi, A.; He, K.; Holeczek, J.; Huang, X.; Juszczak, C.; Kielczewska, D.; Kisiel, J.; Kozlowski, T.; Laffranchi, M.; Lagoda, J.; Li, Z.; Lu, F.; Ma, J.; Mangano, G.; Markiewicz, M.; Martinez de la Ossa, A.; Matthey, C.; Mauri, F.; Meng, G.; Messina, M.; Montanari, C.; Muraro, S.; Navas-Concha, S.; Otwinowski, S.; Ouyang, Q.; Palamara, O.; Pascoli, D.; Periale, L.; Piano Mortari, G.B.; Piazzoli, A.; Picchi, P.; Pietropaolo, F.; Polopek, W.; Rancati, T.; Rappoldi, A.; Raselli, G.L.; Rico, J.; Rondio, E.; Rossella, M.; Rubbia, A.; Rubbia, C.; Sala, P.R. E-mail:; Santorelli, R.; Scannicchio, D.; Segreto, E.; Seo, Y.; Sergiampietri, F.; Sobczyk, J.; Spinelli, N.; Stepaniak, J.; Sulej, R.; Szarska, M.; Szeptycka, M.; Terrani, M.; Velotta, R.; Ventura, S.; Vignoli, C.; Wang, H.; Wang, X.; Woo, J.; Xu, G.; Xu, Z.; Zalewska, A.; Zhang, C.; Zhang, Q.; Zhen, S.; Zipper, W


    Electron recombination in liquid argon (LAr) is studied by means of charged particle tracks collected in various ICARUS liquid argon TPC prototypes. The dependence of the recombination on the particle stopping power has been fitted with a Birks functional dependence. The simulation of the process of electron recombination in Monte Carlo calculations is discussed. A quantitative comparison with previously published data is carried out.

  5. High-pressure gas hydrates of argon: compositions and equations of state. (United States)

    Manakov, Andrey Yu; Ogienko, Andrey G; Tkacz, Marek; Lipkowski, Janusz; Stoporev, Andrey S; Kutaev, Nikolay V


    Volume changes corresponding to transitions between different phases of high-pressure argon gas hydrates were studied with a piston-cylinder apparatus at room temperature. Combination of these data with the data taken from the literature allowed us to obtain self-consistent set of data concerning the equations of state and compositions of the high-pressure hydrates of argon.

  6. Teeming stream protection using an argon shroud during casting of steel ingots (United States)

    Zhang, Chao-jie; Bao, Yan-ping; Wang, Min; Zhang, Le-chen


    Two kinds of argon shroud protection devices with two different basic structures were designed and investigated. Industrial experiments and numerical simulations were used to examine the protection effect, and the mechanism of air entrapment during the casting of steel ingots was analyzed. The influence of the structure of the argon shroud protection device on the protection effect was investigated. An argon shroud protection device mounted to the nozzle holder on the bottom of the ladle does not provide a good protection effect because air can easily flow into the teeming system and cause reoxidation of molten steel during teeming. By contrast, an argon shroud protection device seated on the top of the central trumpet provides an excellent protection effect, where air has little chance of flowing into the teeming system during casting. The feasibilities of the argon shroud protection devices are discussed.

  7. Management of Liver Cancer Argon-helium Knife Therapy with Functional Computer Tomography Perfusion Imaging. (United States)

    Wang, Hongbo; Shu, Shengjie; Li, Jinping; Jiang, Huijie


    The objective of this study was to observe the change in blood perfusion of liver cancer following argon-helium knife treatment with functional computer tomography perfusion imaging. Twenty-seven patients with primary liver cancer treated with argon-helium knife and were included in this study. Plain computer tomography (CT) and computer tomography perfusion (CTP) imaging were conducted in all patients before and after treatment. Perfusion parameters including blood flows, blood volume, hepatic artery perfusion fraction, hepatic artery perfusion, and hepatic portal venous perfusion were used for evaluating therapeutic effect. All parameters in liver cancer were significantly decreased after argon-helium knife treatment (p liver tissue, but other parameters kept constant. CT perfusion imaging is able to detect decrease in blood perfusion of liver cancer post-argon-helium knife therapy. Therefore, CTP imaging would play an important role for liver cancer management followed argon-helium knife therapy.

  8. Characteristics of atmospheric-pressure, radio-frequency glow discharges operated with argon added ethanol (United States)

    Sun, Wen-Ting; Li, Guo; Li, He-Ping; Bao, Cheng-Yu; Wang, Hua-Bo; Zeng, Shi; Gao, Xing; Luo, Hui-Ying


    Rf, atmospheric-pressure glow discharge (APGD) plasmas with bare metal electrodes have promising prospects in the fields of plasma-aided etching, thin film deposition, disinfection and sterilization, etc. In this paper, the discharge characteristics are presented for the rf APGD plasmas generated with pure argon or argon-ethanol mixture as the plasma-forming gas and using water-cooled, bare copper electrodes. The experimental results show that the breakdown voltage can be reduced significantly when a small amount of ethanol is added into argon, probably due to the fact that the Penning ionization process is involved, and a pure α-mode discharge can be produced more easily with the help of ethanol. The uniformity of the rf APGDs of pure argon or argon-ethanol mixtures using bare metallic electrodes is identified with the aid of the intensified charge coupled device images.

  9. Studies of Organometallic Precursors to Aluminum Nitride (United States)


    adduct undergoes thermal decomposition to a series of intermediate R33Al +NH + R3Al :N~H- + -++ AiN + 3R1I (where at CH3, CAH, C09g, etc.) The...which the initially formed Lewis acid/base adduct undergoes thermal decomposition to a series of Intermediate altylaluminum-amide and -imide species...SIOPPLEM.ENTARY NOTATION to be publ ished in Mats. Res. Soc. Syinp. Proc. (19F86) -IL RU SBR _ Aluminum nitride, organomnetallic precutsors,imcl C7Se1

  10. Magnesium doping of boron nitride nanotubes (United States)

    Legg, Robert; Jordan, Kevin


    A method to fabricate boron nitride nanotubes incorporating magnesium diboride in their structure. In a first embodiment, magnesium wire is introduced into a reaction feed bundle during a BNNT fabrication process. In a second embodiment, magnesium in powder form is mixed into a nitrogen gas flow during the BNNT fabrication process. MgB.sub.2 yarn may be used for superconducting applications and, in that capacity, has considerably less susceptibility to stress and has considerably better thermal conductivity than these conventional materials when compared to both conventional low and high temperature superconducting materials.

  11. Method for exfoliation of hexagonal boron nitride (United States)

    Lin, Yi (Inventor); Connell, John W. (Inventor)


    A new method is disclosed for the exfoliation of hexagonal boron nitride into mono- and few-layered nanosheets (or nanoplatelets, nanomesh, nanoribbons). The method does not necessarily require high temperature or vacuum, but uses commercially available h-BN powders (or those derived from these materials, bulk crystals) and only requires wet chemical processing. The method is facile, cost efficient, and scalable. The resultant exfoliated h-BN is dispersible in an organic solvent or water thus amenable for solution processing for unique microelectronic or composite applications.

  12. Fe nanowire encapsulated in boron nitride nanotubes (United States)

    Koi, Naruhiro; Oku, Takeo; Nishijima, Masahiko


    Boron nitride (BN) nanotubes, nanohorns, nanocoils were synthesized by annealing Fe 4N and B powders at 1000 °C for 1 h in nitrogen gas atmosphere. Especially, Fe-filled BN nanotubes were produced, and investigated by high-resolution electron microscopy, high-angle annular dark-field scanning transmission electron microscopy, electron diffraction and energy dispersive X-ray spectroscopy, which indicates that the [110] of Fe is parallel to the BN nanotube axis. Formation mechanism of Fe-filled BN nanotube was speculated based on these results.

  13. Silicon nitride film for solar cells

    Energy Technology Data Exchange (ETDEWEB)

    El amrani, A.; Menous, I.; Mahiou, L.; Touati, A.; Lefgoum, A. [Silicon Technology Unit. 2, Boulevard Frantz Fanon, BP 140 Alger-7 Merveilles, 16200 Algiers (Algeria); Tadjine, R. [Advanced Technologies Development Centre, Cite 20 Aout 1656, Baba hassen, Algiers (Algeria)


    In this work, our aim was to determine the deposition parameters leading to optimal optical properties of Silicon nitride (SiN) film for photovoltaic application. The deposition was performed in an industrial pulsed direct-PECVD using a gas mixture of NH{sub 3}/SiH{sub 4}. After defining the optimum deposition parameters, we have chemically evaluated the film quality in BOE solution. Plasma removal of the optimized SiN films from multicrystalline 4-in solar cells allows highlighting and estimating the emitter passivation and ARC effects on the solar cell electrical performance. (author)

  14. Nitride Semiconductors Handbook on Materials and Devices

    CERN Document Server

    Ruterana, Pierre; Neugebauer, Jörg


    Semiconductor components based on silicon have been used in a wide range of applications for some time now. These elemental semiconductors are now well researched and technologically well developed. In the meantime the focus has switched to a new group of materials: ceramic semiconductors based on nitrides are currently the subject of research due to their optical and electronic characteristics. They open up new industrial possibilities in the field of photosensors, as light sources or as electronic components. This collection of review articles provides a systematic and in-depth overview of t

  15. Kinetic modeling of the Townsend breakdown in argon

    Energy Technology Data Exchange (ETDEWEB)

    Macheret, S. O.; Shneider, M. N. [Department of Mechanical and Aerospace Engineering, Princeton University, D-414 Engineering Quadrangle, Princeton, New Jersey 08544 (United States)


    Kinetic modeling of the Townsend breakdown in argon was performed in the “forward-back” approximation. The kinetic model was found to adequately describe the left branch of the Paschen curve, and the important role of ionization by fast ions and atoms near the cathode, as well as the increase in secondary emission coefficient in strong electric fields described in the literature, was confirmed. The modeling also showed that the electron energy distribution function develops a beam of high-energy electrons and that the runaway effect, i.e., the monotonic increase of the mean electron energy with the distance from the cathode, occurs at the left branch of the Paschen curve.

  16. Grid pattern Argon Laser photocoagulation for diabetic diffuse macular edema

    Directory of Open Access Journals (Sweden)

    Karkhane R


    Full Text Available Purpose: to determine the effect of Grid pattern laser photocoagulation on diabetic diffuse macular edema with assessment of visual outcome. Patients & Methods: The author reviewed the medical records of 84 eyes of 62 patients with diabetic diffuse macular edema treated with Grid pattern green Argon laser photocoagulation in Farabi Eye Hospital between the years 1992-1995, the follow-up period was 16-48 months (average 24.55±6.42, median 28 mounths. Results: Visual acuity was improved in 11.9%; unchanged in 65.4% and worsened in 22.7% of eyes. Conclusion: In assessing long-term visual outcome, Grid laser photocoagulation is an effective modality in maintaining or improving visual acuity.

  17. A Thermodynamic Model for Argon Plasma Kernel Formation

    Directory of Open Access Journals (Sweden)

    James Keck


    Full Text Available Plasma kernel formation of argon is studied experimentally and theoretically. The experiments have been performed in a constant volume cylindrical vessel located in a shadowgraph system. The experiments have been done in constant pressure. The energy of plasma is supplied by an ignition system through two electrodes located in the vessel. The experiments have been done with two different spark energies to study the effect of input energy on kernel growth and its properties. A thermodynamic model employing mass and energy balance was developed to predict the experimental data. The agreement between experiments and model prediction is very good. The effect of various parameters such as initial temperature, initial radius of the kernel, and the radiation energy loss have been investigated and it has been concluded that initial condition is very important on formation and expansion of the kernel.

  18. Uranium (III) precipitation in molten chloride by wet argon sparging (United States)

    Vigier, Jean-François; Laplace, Annabelle; Renard, Catherine; Miguirditchian, Manuel; Abraham, Francis


    In the context of pyrochemical processes for nuclear fuel treatment, the precipitation of uranium (III) in molten salt LiCl-CaCl2 (30-70 mol%) at 705 °C is studied. First, this molten chloride is characterized with the determination of the water dissociation constant. With a value of 10-4.0, the salt has oxoacid properties. Then, the uranium (III) precipitation using wet argon sparging is studied. The salt is prepared using UCl3 precursor. At the end of the precipitation, the salt is totally free of solubilized uranium. The main part is converted into UO2 powder but some uranium is lost during the process due to the volatility of uranium chloride. The main impurity of the resulting powder is calcium. The consequences of oxidative and reductive conditions on precipitation are studied. Finally, coprecipitation of uranium (III) and neodymium (III) is studied, showing a higher sensitivity of uranium (III) than neodymium (III) to precipitation.

  19. Photodegradation Mechanisms of Tetraphenyl Butadiene Coatings for Liquid Argon Detectors

    CERN Document Server

    Jones, B J P; Conrad, J M; Pla-Dalmau, A


    We report on studies of degradation mechanisms of tetraphenyl butadiene (TPB) coatings of the type used in neutrino and dark matter liquid argon experiments. Using gas chromatography coupled to mass spectrometry we have detected the ultraviolet-blocking impurity benzophenone (BP). We monitored the drop in performance and increase of benzophenone concentration in TPB plates with exposure to ultraviolet (UV) light, and demonstrate the correlation between these two variables. Based on the presence and initially exponential increase in the concentration of benzophenone observed, we propose that TPB degradation is a free radical-mediated photooxidation reaction, which is subsequently confirmed by displaying delayed degradation using a free radical inhibitor. Finally we show that the performance of wavelength-shifting coatings of the type envisioned for the LBNE experiment can be improved by 10-20%, with significantly delayed UV degradation, by using a 20% admixture of 4-tert-Butylcatechol.

  20. Image Segmentation in Liquid Argon Time Projection Chamber Detector

    CERN Document Server

    Płoński, Piotr; Sulej, Robert; Zaremba, Krzysztof


    The Liquid Argon Time Projection Chamber (LAr-TPC) detectors provide excellent imaging and particle identification ability for studying neutrinos. An efficient and automatic reconstruction procedures are required to exploit potential of this imaging technology. Herein, a novel method for segmentation of images from LAr-TPC detectors is presented. The proposed approach computes a feature descriptor for each pixel in the image, which characterizes amplitude distribution in pixel and its neighbourhood. The supervised classifier is employed to distinguish between pixels representing particle's track and noise. The classifier is trained and evaluated on the hand-labeled dataset. The proposed approach can be a preprocessing step for reconstructing algorithms working directly on detector images.

  1. Thermal decomposition of yttrium(III) hexanoate in argon

    DEFF Research Database (Denmark)

    Grivel, Jean-Claude; Suarez Guevara, Maria Josefina; Attique, Fahmida;


    The thermal decomposition of yttrium(III) hexanoate (Y(C5H11CO2)3)·xH2O in argon was studied by means of thermogravimetry, differential thermal analysis, IR-spectroscopy, X-ray diffraction at a laboratory Cu-tube source and in-situ experiments at a synchrotron radiation source as well as hot...... into Y2O2CO3 with release of CO2 and 6-undecanone between 280°C and 490°C. A side reaction appears to yield elemental carbon and volatile decane (C10H22). Y2O2CO3 is converted to Y2O3 with release of CO2 between 500°C and 975°C....

  2. Electron Neutrino Classification in Liquid Argon Time Projection Chamber Detector

    CERN Document Server

    Płoński, Piotr; Sulej, Robert; Zaremba, Krzysztof


    Neutrinos are one of the least known elementary particles. The detection of neutrinos is an extremely difficult task since they are affected only by weak sub-atomic force or gravity. Therefore large detectors are constructed to reveal neutrino's properties. Among them the Liquid Argon Time Projection Chamber (LAr-TPC) detectors provide excellent imaging and particle identification ability for studying neutrinos. The computerized methods for automatic reconstruction and identification of particles are needed to fully exploit the potential of the LAr-TPC technique. Herein, the novel method for electron neutrino classification is presented. The method constructs a feature descriptor from images of observed event. It characterizes the signal distribution propagated from vertex of interest, where the particle interacts with the detector medium. The classifier is learned with a constructed feature descriptor to decide whether the images represent the electron neutrino or cascade produced by photons. The proposed ap...

  3. The liquid argon TPC for the ICARUS experiment

    CERN Document Server

    Arneodo, F


    The ICARUS project aims at the realisation of a large liquid argon TPC to be run at the Underground Laboratories of Gran Sasso in Italy. An intense R&D; activity has put on firm grounds this new detector technology and experimentally confirmed its feasibility on a few ton scale. Based on these solid achievements, the collaboration is now confident of being able to build and safely operate a multi-kton detector. The reseach program of the experiment involves the systematic study of a wide spectrum of physical phenomena covering many orders of magnitude in the energy deposited in the detector: from the few MeV of solar neutrino interactions, to the about one GeV of the proton decay and atmospheric neutrinos, up to the higher energies of neutrinos from accelerators.

  4. Development of membrane cryostats for large liquid argon neutrino detectors

    CERN Document Server

    Montanari, D; Gendotti, A; Geynisman, M; Hentschel, S; Loew, T; Mladenov, D; Montanari, C; Murphy, S; Nessi, M; Norris, B; Noto, F; Rubbia, A; Sharma, R; Smargianaki, D; Stewart, J; Vignoli, C; Wilson, P; Wu, S


    A new collaboration is being formed to develop a multi-kiloton Long-Baseline neutrino experiment that will be located at the Surf Underground Research Facility (SURF) in Lead, SD. In the present design, the detector will be located inside cryostats filled with 68,400 ton of ultrapure liquid argon (less than 100 parts per trillion of oxygen equivalent contamination). To qualify the membrane technology for future very large-scale and underground implementations, a strong prototyping effort is ongoing: several smaller detectors of growing size with associated cryostats and cryogenic systems will be designed and built at Fermilab and CERN. They will take physics data and test different detector elements, filtration systems, design options and installation procedures. In addition, a 35 ton prototype is already operational at Fermilab and will take data with single-phase detector in early 2016. After the prototyping phase, the multi-kton detector will be constructed. After commissioning, it will detect and study ne...

  5. Nanotextured Shrink Wrap Superhydrophobic Surfaces by Argon Plasma Etching

    Directory of Open Access Journals (Sweden)

    Jolie M. Nokes


    Full Text Available We present a rapid, simple, and scalable approach to achieve superhydrophobic (SH substrates directly in commodity shrink wrap film utilizing Argon (Ar plasma. Ar plasma treatment creates a stiff skin layer on the surface of the shrink film. When the film shrinks, the mismatch in stiffness between the stiff skin layer and bulk shrink film causes the formation of multiscale hierarchical wrinkles with nano-textured features. Scanning electron microscopy (SEM images confirm the presence of these biomimetic structures. Contact angle (CA and contact angle hysteresis (CAH measurements, respectively, defined as values greater than 150° and less than 10°, verified the SH nature of the substrates. Furthermore, we demonstrate the ability to reliably pattern hydrophilic regions onto the SH substrates, allowing precise capture and detection of proteins in urine. Finally, we achieved self-driven microfluidics via patterning contrasting superhydrophilic microchannels on the SH Ar substrates to induce flow for biosensing.

  6. The ATLAS liquid Argon calorimeters read-out system

    CERN Document Server

    Blondel, A; Fayard, L; La Marra, D; Léger, A; Matricon, P; Perrot, G; Poggioli, L; Prast, J; Riu, I; Simion, S


    The calorimetry of the ATLAS experiment takes advantage of different detectors based on the liquid Argon (LAr) technology. Signals from the LAr calorimeters are processed by various stages before being delivered to the Data Acquisition system. The calorimeter cell signals are received by the front-end boards, which digitize a predetermined number of samples of the bipolar waveform and sends them to the Read-Out Driver (ROD) boards. The ROD board receives triggered data from 1028 calorimeter cells, and determines the precise energy and timing of the signals by processing the discrete samplings of the pulse. In addition, it formats the digital stream for the following elements of the DAQ chain, and performs monitoring. The architecture and functionality of the ATLAS LAr ROD board are discussed, along with the final design of the Processing Unit boards housing the Digital Signal Processors (DSP). (9 refs).

  7. Large area liquid argon detectors for interrogation systems

    Energy Technology Data Exchange (ETDEWEB)

    Gary, Charles; Kane, Steve; Firestone, Murray I.; Smith, Gregory [Adelphi Technology LLC, Purdue Technology Center, 5225 Exploration Drive, Indianapolis, IN 46241 (United States); Gozani, Tsahi; Brown, Craig; Kwong, John; King, Michael J. [Rapiscan Laboratories, 520 Almanor Avenue, Sunnyvale, CA 94085 (United States); Nikkel, James A.; McKinsey, Dan [Physics Department, Yale University, New Haven, CT 06520 (United States)


    Measurements of the efficiency, pulse shape, and energy and time resolution of liquid argon (LAr) detectors are presented. Liquefied noble gas-based (LNbG) detectors have been developed for the detection of dark matter and neutrinoless double-beta decay. However, the same qualities that make LNbG detectors ideal for these applications, namely their size, cost, efficiency, pulse shape discrimination and resolution, make them promising for portal screening and the detection of Special Nuclear Materials (SNM). Two 18-liter prototype detectors were designed, fabricated, and tested, one with pure LAr and the other doped with liquid Xe (LArXe). The LArXe detector presented the better time and energy resolution of 3.3 ns and 20% at 662 KeV, respectively. The total efficiency of the detector was measured to be 35% with 4.5% of the total photons detected in the photopeak.

  8. Flush-mounted probe diagnostics for argon glow discharge plasma

    Energy Technology Data Exchange (ETDEWEB)

    Xu, Liang, E-mail:; Cao, Jinxiang; Liu, Yu; Wang, Jian; Du, Yinchang; Zheng, Zhe; Zhang, Xiao; Wang, Pi [Department of Modern Physics, University of Science and Technology of China, Hefei, Anhui 230026 (China); Zhang, Jin; Li, Xiao; Qin, Yongqiang; Zhao, Liang [Science and Technology on Space Physics Laboratory, Beijing 100076 (China)


    A comparison is made between plasma parameters measured by a flush-mounted probe (FP) and a cylindrical probe (CP) in argon glow discharge plasma. Parameters compared include the space potential, the plasma density, and the effective electron temperature. It is found that the ion density determined by the FP agrees well with the electron density determined by the CP in the quasi-neutral plasma to better than 10%. Moreover, the space potential and effective electron temperature calculated from electron energy distribution function measured by the FP is consistent with that measured by the CP over the operated discharge current and pressure ranges. These results present the FP can be used as a reliable diagnostic tool in the stable laboratory plasma and also be anticipated to be applied in other complicated plasmas, such as tokamaks, the region of boundary-layer, and so on.

  9. Argon plasma coagulation for treatment of hemorrhagic radiation gastroduodenitis

    Energy Technology Data Exchange (ETDEWEB)

    Maekawa, Shu-Ji; Aoyama, Nobuo; Shirasaka, Daisuke; Inoue, Takashi; Kuroda, Kohei; Ebara, Shigeyuki; Tamura, Takao; Miyamoto, Masaki; Kasuga, Masato [Kobe Univ. (Japan). Graduate School of Medicine


    A 79-year-old man who had received radiotherapy for portal vein thrombosis due to hepatocellular carcinoma (HCC) 5 months earlier, showed progressive anemia and melena. Endoscopy on admission revealed diffuse bleeding from multiple telangiectasias on the anterior wall of the antrum and bulbus. We treated this patient with a new non-contact hemostatic method: the argon plasma coagulator (APC). The melena stopped after the first session and the hemoglobin level remained stable for 7 months. No delayed complications have been observed. Gastrointestinal bleeding from chronic radiation gastroduodenitis is rarely reported compared with radiation proctitis. This case demonstrates that APC is effective for hemostasis of diffuse bleeding from radiation gastroduodenitis, just as for radiation protitis. (author)

  10. Studies on argon collisions with smooth and rough tungsten surfaces. (United States)

    Ozhgibesov, M S; Leu, T S; Cheng, C H; Utkin, A V


    The aim of this work is to investigate argon scattering behaviors on the smooth and rough tungsten surfaces. Current work deals with numerical simulation of nanoscale heat transfer process accompanying with rarefied gas-solid substrate interactions using molecular dynamics (MD) method. Taking into account that this method is very time consuming, MD simulation using CUDA capable Graphic Cards is implemented. The results found that imperfection of the surface significantly influences on gas atom's momentum change upon collision. However, the energy exchange rate remains unchanged regardless to the surface roughness. This finding is in contrast with the results in extant literatures. We believed the results found in this paper are important for both numerical and theoretical analyses of rarefied gas flow in micro- and nano-systems where the choice of boundary conditions significantly influences flow.

  11. Argon plasma immersion ion implantation of polystyrene films

    Energy Technology Data Exchange (ETDEWEB)

    Kondyurin, A. [Applied and Plasma Physics, School of Physics (A28), University of Sydney, New South Wales 2006 (Australia)], E-mail:; Gan, B.K.; Bilek, M.M.M.; McKenzie, D.R.; Mizuno, K. [Applied and Plasma Physics, School of Physics (A28), University of Sydney, New South Wales 2006 (Australia); Wuhrer, R. [Microstructural Analysis Unit, University of Technology Sydney, P.O. Box 123, Broadway, NSW 2007 (Australia)


    Plasma immersion ion implantation (PIII), using bias voltages of 5, 10, 15 and 20 kV in an argon plasma and fluences in the range of 2 x 10{sup 14}-2 x 10{sup 16} ions/cm{sup 2}, was applied to 100 nm polystyrene films coated on silicon wafer substrates. The etching kinetics and structural changes induced in the polystyrene films were investigated with ellipsometry, Raman and FTIR spectroscopies, optical and scanning electron microscopies, atomic force microscopy and contact angle measurements. Effects such as carbonisation, oxidation and cross-linking were observed and their dependence on the applied bias voltage is reported. Variations in the etching rate during the PIII process and its relationship to carbonisation of the modified surface layer are explored.

  12. Photoionisation studies of homogeneous argon and krypton clusters using TPEPICO

    Energy Technology Data Exchange (ETDEWEB)

    Kamke, W.; Vries, J. de; Krauss, J.; Kaiser, E.; Kamke, B.; Hertel, I.V. (Freiburg Univ. (Germany, F.R.). Fakultaet fuer Physik)


    The photoionisation threshold region of homogeneous argon and krypton clusters Ar{sub n} and Kr{sub n} for n up to 24 formed in a free jet expansion has been studied in detail, using the threshold photoelectron photoion coincidence (TPEPICO) time of flight technique. Measurements performed at a variety of different expansion conditions (nozzle temperature and stagnation pressure) demonstrate that fragmentation of larger clusters contributes substantially to the shape of the TPEPICO spectra even for the smallest clusters and at all photon energies higher than about 200 meV to 400 meV above the ionisation threshold. The determination of ionisation potentials for these cluster ions is discussed and careful estimates are given and compared with recent theoretical values. (orig.).

  13. Hard and low friction nitride coatings and methods for forming the same (United States)

    Erdemir, Ali; Urgen, Mustafa; Cakir, Ali Fuat; Eryilmaz, Osman Levent; Kazmanli, Kursat; Keles, Ozgul


    An improved coating material possessing super-hard and low friction properties and a method for forming the same. The improved coating material includes the use of a noble metal or soft metal homogeneously distributed within a hard nitride material. The addition of small amounts of such metals into nitrides such as molybdenum nitride, titanium nitride, and chromium nitride results in as much as increasing of the hardness of the material as well as decreasing the friction coefficient and increasing the oxidation resistance.

  14. Ammonia Decomposition over Bimetallic Nitrides Supported on γ-Al2O3

    Institute of Scientific and Technical Information of China (English)

    Chun Shan LU; Xiao Nian LI; Yi Feng ZHU; Hua Zhang LIU; Chun Hui ZHOU


    A series of monometallic nitrides and bimetallic nitrides were prepared by temperature-programmed reaction with NH3. The effects of Co, Ni and Fe additives and the synergic action between Fe, Co, Ni and Mo on the ammonia decomposition activity were investigated. TPR-MS, XRD were also carried out to obtain better insight into the structure of the bimetallic nitride. The results of ammonia decomposition activity show that bimetallic nitrides are more active than monometallic nitrides or bimetallic oxides.

  15. Spectroscopic studies of cryogenic fluids: Benzene in argon and helium (United States)

    Nowak, R.; Bernstein, E. R.


    Energy shifts and bandwidths of the 610 vibronic feature of the 1B2u←1A1g optical absorption spectrum of benzene dissolved in supercritical argon and helium, and in liquid argon are reported as a function of pressure, temperature, and density. Benzene/Ar solutions display red shifts of the 610 transition with increasing density but the dependence is found to be nonlinear at high densities. Benzene/He solutions evidence blue shifts of the 610 transition as a function of increasing density which also becomes nonlinear at high densities. Only small spectral shifts are recorded if the density is kept constant and pressure and temperature are varied simultaneously. In addition, a small density independent temperature effect on the transition energy shift is identified. Experimental results are compared to dielectric (Onsager-Böttcher and Wertheim) and quantum statistical mechanical (Schweizer-Chandler) theories of solvent effects on solute absorption energy. Reasonably good agreement between experiment and theory is found only for the benzene/Ar system at relatively low densities. The theory fails to predict energy shifts for both the benzene/He and high density benzene/Ar systems. This result is different from the findings for the benzene/N2 and benzene/C3H8 solutions and can be interpreted qualitatively in terms of competition between dispersive attractive and repulsive interactions as a function of density. The failure of the theory to describe these transition energy shifts is attributed to the omission of explicit repulsive interactions terms in the theoretical models employed.

  16. Atmospheric dispersion of argon-41 from anuclear research reactor: measurement and modeling of plume geometry and gamma radiation field

    DEFF Research Database (Denmark)

    Lauritzen, Bent; Astrup, Poul; Drews, Martin


    An atmospheric dispersion experiment was conducted using a visible tracer along with the routine release of argon-41 from the BR1 research reactor in Mol, Belgium. Simultaneous measurements of plume geometry and radiation fields for argon-41 decay were performed as well as measurements of the argon...

  17. Microstructure and Properties of Plasma Source Nitrided AISI 316 Austenitic Stainless Steel (United States)

    Li, G. Y.; Lei, M. K.


    Plasma source nitriding is a relatively new nitriding technology which can overcome those inherent shortcomings associated with conventional direct current plasma nitriding technology such as the arcing surface damage, the edging effect and the hollow cathode effect. There is considerable study on the properties of nitrided samples for laboratorial scale plasma source nitriding system; however, little information has been reported on the industrial-scale plasma source nitriding system. In this work, AISI 316 austenitic stainless steel samples were nitrided by an industrial-scale plasma source nitriding system at various nitriding temperatures (350, 400, 450 and 500 °C) with a floating potential. A high-nitrogen face-centered-cubic phase (γN) formed on the surface of nitrided sample surface. As the nitriding temperature was increased, the γN phase layer thickness increased, varying from 1.5 μm for the lowest nitriding temperature of 350 °C, to 30 μm for the highest nitriding temperature of 500 °C. The maximum Vickers microhardness of the γN phase layer with a peak nitrogen concentration of 20 at.% is about HV 0.1 N 15.1 GPa at the nitriding temperature of 450 °C. The wear and corrosion experimental results demonstrated that the γN phase was formed on the surface of AISI 316 austenitic stainless steel by plasma source nitriding, which exhibits not only high wear resistance, but also good pitting corrosion resistance.

  18. Anti corrosion layer for stainless steel in molten carbonate fuel cell - comprises phase vapour deposition of titanium nitride, aluminium nitride or chromium nitride layer then oxidising layer in molten carbonate electrolyte

    DEFF Research Database (Denmark)


    Forming an anticorrosion protective layer on a stainless steel surface used in a molten carbonate fuel cell (MCFC) - comprises the phase vapour deposition (PVD) of a layer comprising at least one of titanium nitride, aluminium nitride or chromium nitride and then forming a protective layer in situ...

  19. Investigation of surface properties of high temperature nitrided titanium alloys

    Directory of Open Access Journals (Sweden)

    E. Koyuncu


    Full Text Available Purpose: The purpose of paper is to investigate surface properties of high temperature nitrided titanium alloys.Design/methodology/approach: In this study, surface modification of Ti6Al4V titanium alloy was made at various temperatures by plasma nitriding process. Plasma nitriding treatment was performed in 80% N2-20% H2 gas mixture, for treatment times of 2-15 h at the temperatures of 700-1000°C. Surface properties of plasma nitrided Ti6Al4V alloy were examined by metallographic inspection, X-Ray diffraction and Vickers hardness.Findings: Two layers were determined by optic inspection on the samples that were called the compound and diffusion layers. Compound layer contain TiN and Ti2N nitrides, XRD results support in this formations. Maximum hardness was obtained at 10h treatment time and 1000°C treatment temperature. Micro hardness tests showed that hardness properties of the nitrided samples depend on treatment time and temperature.Practical implications: Titanium and its alloys have very attractive properties for many industries. But using of titanium and its alloys is of very low in mechanical engineering applications because of poor tribological properties.Originality/value: The nitriding of titanium alloy surfaces using plasma processes has already reached the industrial application stage in the biomedical field.

  20. Characterization of plasma nitrided layers produced on sintered iron

    Directory of Open Access Journals (Sweden)

    Marcos Alves Fontes


    Full Text Available Plasma nitriding is a thermo-physical-chemical treatment process, which promotes surface hardening, caused by interstitial diffusion of atomic nitrogen into metallic alloys. In this work, this process was employed in the surface modification of a sintered ferrous alloy. Scanning electron microscopy (SEM, X-ray diffraction (XRD analyses, and wear and microhardness tests were performed on the samples submitted to ferrox treatment and plasma nitriding carried out under different conditions of time and temperature. The results showed that the nitride layer thickness is higher for all nitrided samples than for ferrox treated samples, and this layer thickness increases with nitriding time and temperature, and temperature is a more significant variable. The XRD analysis showed that the nitrided layer, for all samples, near the surface consists in a mixture of γ′-Fe4N and ɛ-Fe3N phases. Both wear resistance and microhardness increase with nitriding time and temperature, and temperature influences both the characteristics the most.

  1. Modelling the effect of arbitrary P-T-t histories on argon diffusion in minerals using the MacArgon program for the Apple Macintosh (United States)

    Lister, Gordon S.; Baldwin, Suzanne L.


    Argon diffusion in mineral grains has been numerically modelled using P-T-t histories that may be relevant to multiply metamorphosed orogenic terranes and for rocks that have resided at high ambient temperatures in the Earth's crust for long durations. The MacArgon program generates argon concentration profiles in minerals assuming argon loss occurs via volume diffusion. It can be run on an Apple Macintosh computer, with arbitrary P-T-t histories used as input. Finite-difference equations are used in the calculation of 40Ar∗ concentration profiles across individual diffusion domains. The associated MacSpectrometer generates model spectra after a P-T-t history has been specified. The form of model {40Ar }/{39Ar } apparent age spectra suggests that considerable caution needs to be exercised in the use of the closure temperature concept and in the interpretation of the significance of plateaux observed in many {40Ar }/{39Ar } apparent age spectra, particularly in cases involving metamorphic rocks, where complex P-T-t histories might apply. Although modelled spectra cannot be directly compared to experimentally determined {40Ar }/{39Ar } age spectra, especially when hydrous phases are involved or in cases where loss of argon has not occurred via volume diffusion, they do provide insight into theoretically expected age spectra for samples that have experienced complex P-T-t histories. MacArgon can be obtained by e-mail from MacArgon with enquiries to

  2. Cubic III-nitrides: potential photonic materials (United States)

    Onabe, K.; Sanorpim, S.; Kato, H.; Kakuda, M.; Nakamura, T.; Nakamura, K.; Kuboya, S.; Katayama, R.


    The growth and characterization of some cubic III-nitride films on suitable cubic substrates have been done, namely, c- GaN on GaAs by MOVPE, c-GaN and c-AlGaN on MgO by RF-MBE, and c-InN and c-InGaN (In-rich) on YSZ by RFMBE. This series of study has been much focused on the cubic-phase purity as dependent on the respective growth conditions and resulting electrical and optical properties. For c-GaN and c-InN films, a cubic-phase purity higher than 95% is attained in spite of the metastable nature of the cubic III-nitrides. However, for c-AlGaN and c-InGaN films, the cubic-phase purity is rapidly degraded with significant incorporation of the hexagonal phase through stacking faults on cubic {111} faces which may be exposed on the roughened growing or substrate surface. It has been shown that the electron mobilities in c-GaN and c-AlGaN films are much related to phase purity.

  3. Preparation and Instability of Nanocrystalline Cuprous Nitride. (United States)

    Reichert, Malinda D; White, Miles A; Thompson, Michelle J; Miller, Gordon J; Vela, Javier


    Low-dimensional cuprous nitride (Cu3N) was synthesized by nitridation (ammonolysis) of cuprous oxide (Cu2O) nanocrystals using either ammonia (NH3) or urea (H2NCONH2) as the nitrogen source. The resulting nanocrystalline Cu3N spontaneously decomposes to nanocrystalline CuO in the presence of both water and oxygen from air at room temperature. Ammonia was produced in 60% chemical yield during Cu3N decomposition, as measured using the colorimetric indophenol method. Because Cu3N decomposition requires H2O and produces substoichiometric amounts of NH3, we conclude that this reaction proceeds through a complex stoichiometry that involves the concomitant release of both N2 and NH3. This is a thermodynamically unfavorable outcome, strongly indicating that H2O (and thus NH3 production) facilitate the kinetics of the reaction by lowering the energy barrier for Cu3N decomposition. The three different Cu2O, Cu3N, and CuO nanocrystalline phases were characterized by a combination of optical absorption, powder X-ray diffraction, transmission electron microscopy, and electronic density of states obtained from electronic structure calculations on the bulk solids. The relative ease of interconversion between these interesting and inexpensive materials bears possible implications for catalytic and optoelectronic applications.

  4. Structure refinement for tantalum nitrides nanocrystals with various morphologies

    Energy Technology Data Exchange (ETDEWEB)

    Liu, Lianyun [School of Metallurgical and Ecological Engineering, University of Science and Technology Beijing, 30 Xue Yuan Road, Haidian District, Beijing 100083 (China); School of Science, Beijing Jiaotong University, 3 Shang Yuan Cun, Haidian District, Beijing 100044 (China); Huang, Kai; Hou, Jungang [School of Metallurgical and Ecological Engineering, University of Science and Technology Beijing, 30 Xue Yuan Road, Haidian District, Beijing 100083 (China); Zhu, Hongmin, E-mail: [School of Metallurgical and Ecological Engineering, University of Science and Technology Beijing, 30 Xue Yuan Road, Haidian District, Beijing 100083 (China)


    Graphical abstract: Tantalum nitrides nanocrystals with various phases and morphologies for the first time have been synthesized through homogenous sodium reduction under low temperature with the subsequent annealing process under high vacuum. Highlights: ► The spherical TaN, cuboidal TaN{sub 0.83} and TaN{sub 0.5} nanocrystals have been synthesized through homogenous sodium reduction under low temperature with the subsequent annealing process under high vacuum. ► The crystal structures of different tantalum nitrides were determined by Rietveld refinement on the X-ray diffraction data and the examinations of electron microcopies. ► The specific surface area of the tantalum nitrides powders was around 10 m{sup 2} g{sup −1}. ► Tantalum nitrides powders could be suitable for capacitor with high specific capacitance. -- Abstract: Tantalum nitrides (TaN{sub x}) nanocrystals with different phase and morphology have been synthesized through homogenous sodium reduction under low temperature with the subsequent annealing process under high vacuum. The crystal structures of tantalum nitrides were determined by Rietveld refinement based on the X-ray diffraction data. The morphologies of various tantalum nitrides nanocrystals in high quality were analyzed through the electron microcopies examinations. The spherical TaN nanoparticles, cuboidal TaN{sub 0.83} and TaN{sub 0.5} nanocrystals have been selectively prepared at different annealing temperatures. In addition, the specific surface areas of the tantalum nitrides nanocrystals measured by BET method were around 9.87–11.64 m{sup 2} g{sup −1}, indicating that such nano-sized tantalum nitrides could be suitable for capacitor with high specific capacitance.

  5. Tissue gas and blood analyses of human subjects breathing 80% argon and 20% oxygen (United States)

    Horrigan, D. J.; Wells, C. H.; Guest, M. M.; Hart, G. B.; Goodpasture, J. E.


    Eight human volunteers, individually studied in a hyperbaric chamber, breathed: (1) air at 1 ATA; (2) 80% argon and 20% oxygen at 1 ATA for 30 min; (3) air at 1 ATA for 30 min; (4) 100% O2 at 1 ATA for 30 min; (5) air at 1 ATA for 30 min; (6) 100% O2 at 2 ATA for 60 min; and (7) 80% argon and 20% oxygen at 1 ATA for 30 min. Oxygen, carbon dioxide, nitrogen, and argon tensions were measured in muscle and subcutaneous tissue by mass spectroscopic analyses. Venous blood obtained at regular intervals was analyzed for coagulation and fibrinolytic factors. Inert gas narcosis was not observed. After breathing argon for 30 min, muscle argon tensions were almost three times the subcutaneous tensions. Argon wash-in mirrored nitrogen wash-out. Argon wash-in and wash-out had no effect on tissue PO2 or PCO2. Coagulation and fibrinolytic changes usually associated with vascular bubbles were absent.

  6. Preparation of Ultra-fine Aluminum Nitride in Thermal Plasma

    Institute of Scientific and Technical Information of China (English)

    漆继红; 罗义文; 印永祥; 代晓雁


    Ultra-fine aluminum nitride has been synthesized by the evaporation of aluminum powder at atmospheric-pressure nitrogen plasma in a hot-wall reactor. The average size of aluminum nitride particle is 0.11μm measured by scanning electric mirror (SEM), and the purity is at least over 90% evaluated by X-Ray diffraction (XRD). The conversion of Al powder to aluminum nitride is strongly depended on the injection of NH3. Typical experimental parameters such as the feed rate of raw material, the flow rate of ammonia and the position of injecting aluminum powder into the reactor are given.

  7. High efficiency III-nitride light-emitting diodes (United States)

    Crawford, Mary; Koleske, Daniel; Cho, Jaehee; Zhu, Di; Noemaun, Ahmed; Schubert, Martin F; Schubert, E. Fred


    Tailored doping of barrier layers enables balancing of the radiative recombination among the multiple-quantum-wells in III-Nitride light-emitting diodes. This tailored doping enables more symmetric carrier transport and uniform carrier distribution which help to reduce electron leakage and thus reduce the efficiency droop in high-power III-Nitride LEDs. Mitigation of the efficiency droop in III-Nitride LEDs may enable the pervasive market penetration of solid-state-lighting technologies in high-power lighting and illumination.

  8. Conductive and robust nitride buffer layers on biaxially textured substrates (United States)

    Sankar, Sambasivan [Chicago, IL; Goyal, Amit [Knoxville, TN; Barnett, Scott A [Evanston, IL; Kim, Ilwon [Skokie, IL; Kroeger, Donald M [Knoxville, TN


    The present invention relates to epitaxial, electrically conducting and mechanically robust, cubic nitride buffer layers deposited epitaxially on biaxially textured substrates such as metals and alloys. The invention comprises of a biaxially textured substrate with epitaxial layers of nitrides. The invention also discloses a method to form such epitaxial layers using a high rate deposition method as well as without the use of forming gases. The invention further comprises epitaxial layers of oxides on the biaxially textured nitride layer. In some embodiments the article further comprises electromagnetic devices which may have superconducting properties.

  9. Preparation of carbon-nitride bulk samples in the presence of seed carbon-nitride films

    Energy Technology Data Exchange (ETDEWEB)

    Kim, J. I. [Korea University of Technology and Education, Chonan (Korea, Republic of); Zorov, N. B. [Moscow State University, Moscow (Russian Federation)


    A procedure was developed for preparing bulk carbon-nitride crystals from polymeric alpha-C{sub 3}N{sub 4.2} at high pressure and high temperature in the presence of seeds of crystalline carbon-nitride films prepared by using a high-voltage discharge plasma combined with pulsed laser ablation of a graphite target. The samples were evaluated by using X-ray photoelectron spectroscopy (XPS), infrared (IR) spectroscopy, Auger electron spectroscopy (AES), secondary-ion mass spectrometry (SIMS), scanning electron microscopy (SEM) and X-ray diffraction (XRD). Notably, XPS studies of the film composition before and after thermobaric treatments demonstrated that the nitrogen composition in the alpha-C{sub 3}N{sub 4.2} material, which initially contained more than 58 % nitrogen, decreased during the annealing process and reached a common, stable composition of approx 45 %. The thermobaric experiments were performed at 10 - 77 kbar and 350 - 1200 .deg. C.

  10. Wetting and evaporation of argon nanodroplets on smooth and rough substrates: Molecular dynamics simulations (United States)

    Li, Qun; Wang, Baohe; Chen, Yonggang; Zhao, Zongchang


    Wetting and evaporation behaviors of argon nanodroplets on smooth and rough substrates are studied using molecular dynamics simulations. Effects of interaction energy between solid and argon atoms on wetting and evaporation and differences between nanodroplets on smooth and rough substrates have been investigated. The results show that for both smooth and rough substrates, as the interaction energy between solid and argon atoms increases, the contact angle and total evaporation increase. For rough substrates, the variations of contact angle and contact radius during evaporation progress are much more complex and the total evaporation is much larger than that of smooth substrates.

  11. Surface compositional changes in GaAs subjected to argon plasma treatment

    Energy Technology Data Exchange (ETDEWEB)

    Surdu-Bob, C.C.; Sullivan, J.L.; Saied, S.O.; Layberry, R.; Aflori, M


    X-ray photoelectron spectroscopy (XPS) has been employed to study surface compositional changes in GaAs (1 0 0) subjected to argon plasma treatment. The experimental results have been explained in terms of predicted argon ion energies, measured ion densities and etch rates. A model is proposed for the processes taking place at the surface of GaAs in terms of segregation, sputtering and surface relaxation. Stopping and range of ions in matter (SRIM) code has also been employedan aid to identification of the mechanisms responsible for the compositional changes. Argon plasma treatment induced surface oxidation at very low energies and sputtering and surface damage with increasing energy.

  12. Cryogenic System for the Test Facilities of the ATLAS Liquid Argon Calorimeter Modules

    CERN Document Server

    Bremer, J; Chalifour, M; Haug, F; Passardi, Giorgio; Tischhauser, Johann


    To perform cold tests on the different modules of the ATLAS liquid argon calorimeter, a cryogenic system has been constructed and is now operated at the CERN North Experimental Area. Three different test cryostats will house the modules, which can also be exposed to particle beams for calibration purposes. The three cryostats share a common liquid argon and liquid nitrogen distribution system. The system is rather complex since it has to allow operations of the three cryostats at the same time. Liquid nitrogen is used as cold source for both the cool-down of the cryostats and for normal operation of the cryostats filled with liquid argon.

  13. High Temperature Oxidation of Boron Nitride. Part 1; Monolithic Boron Nitride (United States)

    Jacobson, Nathan; Farmer, Serene; Moore, Arthur; Sayir, Haluk


    High temperature oxidation of monolithic boron nitride (BN) is examined. Hot pressed BN and both low and high density CVD BN were studied. It is shown that oxidation rates are quite sensitive to microstructural factors such as orientation, porosity, and degree of crystallinity. In addition small amounts of water vapor lead to volatilization of the B2O3 oxide as H(x)B(y)O(z). For these reasons, very different oxidation kinetics were observed for each type of BN.

  14. EDITORIAL: Non-polar and semipolar nitride semiconductors Non-polar and semipolar nitride semiconductors (United States)

    Han, Jung; Kneissl, Michael


    Throughout the history of group-III-nitride materials and devices, scientific breakthroughs and technological advances have gone hand-in-hand. In the late 1980s and early 1990s, the discovery of the nucleation of smooth (0001) GaN films on c-plane sapphire and the activation of p-dopants in GaN led very quickly to the realization of high-brightness blue and green LEDs, followed by the first demonstration of GaN-based violet laser diodes in the mid 1990s. Today, blue InGaN LEDs boast record external quantum efficiencies exceeding 80% and the emission wavelength of the InGaN-based laser diode has been pushed into the green spectral range. Although these tremenduous advances have already spurred multi-billion dollar industries, there are still a number of scientific questions and technological issues that are unanswered. One key challenge is related to the polar nature of the III-nitride wurtzite crystal. Until a decade ago all research activities had almost exclusively concentrated on (0001)-oriented polar GaN layers and heterostructures. Although the device characteristics seem excellent, the strong polarization fields at GaN heterointerfaces can lead to a significant deterioration of the device performance. Triggered by the first demonstration non-polar GaN quantum wells grown on LiAlO2 by Waltereit and colleagues in 2000, impressive advances in the area of non-polar and semipolar nitride semiconductors and devices have been achieved. Today, a large variety of heterostructures free of polarization fields and exhibiting exceptional electronic and optical properties have been demonstrated, and the fundamental understanding of polar, semipolar and non-polar nitrides has made significant leaps forward. The contributions in this Semiconductor Science and Technology special issue on non-polar and semipolar nitride semiconductors provide an impressive and up-to-date cross-section of all areas of research and device physics in this field. The articles cover a wide range of

  15. Plasma nitriding monitoring reactor: A model reactor for studying plasma nitriding processes using an active screen (United States)

    Hamann, S.; Börner, K.; Burlacov, I.; Spies, H.-J.; Strämke, M.; Strämke, S.; Röpcke, J.


    A laboratory scale plasma nitriding monitoring reactor (PLANIMOR) has been designed to study the basics of active screen plasma nitriding (ASPN) processes. PLANIMOR consists of a tube reactor vessel, made of borosilicate glass, enabling optical emission spectroscopy (OES) and infrared absorption spectroscopy. The linear setup of the electrode system of the reactor has the advantages to apply the diagnostic approaches on each part of the plasma process, separately. Furthermore, possible changes of the electrical field and of the heat generation, as they could appear in down-scaled cylindrical ASPN reactors, are avoided. PLANIMOR has been used for the nitriding of steel samples, achieving similar results as in an industrial scale ASPN reactor. A compact spectrometer using an external cavity quantum cascade laser combined with an optical multi-pass cell has been applied for the detection of molecular reaction products. This allowed the determination of the concentrations of four stable molecular species (CH4, C2H2, HCN, and NH3). With the help of OES, the rotational temperature of the screen plasma could be determined.

  16. Microstructure and Hardness of High Temperature Gas Nitrided AISI 420 Martensitic Stainless Steel

    Directory of Open Access Journals (Sweden)

    Ibrahim Nor Nurulhuda Md.


    Full Text Available This study examined the microstructure and hardness of as-received and nitrided AISI 420 martensitic stainless steels. High temperature gas nitriding was employed to treat the steels at 1200°C for one hour and four hours using nitrogen gas, followed by furnace cooled. Chromium nitride and iron nitride were formed and concentrated at the outmost surface area of the steels since this region contained the highest concentration of nitrogen. The grain size enlarged at the interior region of the nitrided steels due to nitriding at temperature above the recrystallization temperature of the steel and followed by slow cooling. The nitrided steels produced higher surface hardness compared to as-received steel due to the presence of nitrogen and the precipitation of nitrides. Harder steel was produced when nitriding at four hours compared to one hour since more nitrogen permeated into the steel.

  17. Numerical and experimental study of transferred arcs in argon

    Energy Technology Data Exchange (ETDEWEB)

    Bini, R [Department of Mechanical Engineering, Politecnico di Milano, Via Bonardi 9, 20133 Milan (Italy); Monno, M [Department of Mechanical Engineering, Politecnico di Milano, Via Bonardi 9, 20133 Milan (Italy); Boulos, M I [Centre de Recherche en Energie, Plasma et Electrochimie (CREPE), Department de Genie Chimique Universite de Sherbrooke, 2500 Boul. Universite, Sherbrooke, J1K1R2 (Canada)


    The bidimensional model of the electric arc is enhanced with the plasma-electrodes interaction to predict the properties and the energy distribution of an argon arc operating with current intensities between 100 and 200 A and electrode gaps of 10 and 20 mm. An adaptive numerical insulation is applied to the cathode, to properly simulate its thermionic emission mechanism and overcome the dependence on empirical distributions of the current density at its tip. The numerical results are quantitatively compared with the data obtained from calorimetric and spectroscopical measurements, performed on a device which generates a transferred arc between a water cooled copper anode and a thoriated tungsten cathode enclosed in a stainless steel chamber. The calculation of the heat fluxes towards the electrodes permits to determine the amount of power delivered to each component of the arc system (the anode, the cathode assembly and the chamber) and to evaluate the overall efficiency of the process for different configurations. The agreement between theory and data, over the range of parameters investigated, is sensible both in the temperature profiles and in the energy distributions. In such configurations, the conduction from the hot gas is the most relevant term in the overall heat transferred to the anode, but it is the electron transfer which rules the heat transfer in the arc attachment zone. The arc attachment radius is also dependent on the process parameters and increases with the arc current (from approximately 5 mm at 100 A to 7 mm at 200 A) and the arc length. However the maximum heat flux reached on the axis decreases increasing the gap between the electrodes, although more power is delivered to the anode due to the radial spreading of the plasma. A 10 mm 200 A argon arc releases to the anode about 2.6 kW, which corresponds to 75% of the total arc power available. If the arc is extended to 20 mm the power transferred rises by nearly 350 W, but the overall

  18. Pair distribution functions of silicon/silicon nitride interfaces (United States)

    Cao, Deng; Bachlechner, Martina E.


    Using molecular dynamics simulations, we investigate different mechanical and structural properties of the silicon/silicon nitride interface. One way to characterize the structure as tensile strain is applied parallel to the interface is to calculate pair distribution functions for specific atom types. The pair distribution function gives the probability of finding a pair of atoms a distance r apart, relative to the probability expected for a completely random distribution at the same density. The pair distribution functions for bulk silicon nitride reflect the fracture of the silicon nitride film at about 8 % and the fact that the centerpiece of the silicon nitride film returns to its original structure after fracture. The pair distribution functions for interface silicon atoms reveal the formation of bonds for originally unbound atom pairs, which is indicative of the interstitial-vacancy defect that causes failure in silicon.

  19. Bond Angles in the Crystalline Silicon/Silicon Nitride Interface (United States)

    Leonard, Robert H.; Bachlechner, Martina E.


    Silicon nitride deposited on a silicon substrate has major applications in both dielectric layers in microelectronics and as antireflection and passivation coatings in photovoltaic applications. Molecular dynamic simulations are performed to investigate the influence of temperature and rate of externally applied strain on the structural and mechanical properties of the silicon/silicon nitride interface. Bond-angles between various atom types in the system are used to find and understand more about the mechanisms leading to the failure of the crystal. Ideally in crystalline silicon nitride, bond angles of 109.5 occur when a silicon atom is at the vertex and 120 angles occur when a nitrogen atom is at the vertex. The comparison of the calculated angles to the ideal values give information on the mechanisms of failure in silicon/silicon nitride system.

  20. Thermal Effect of Ceramic Nanofiller Aluminium Nitride on Polyethylene Properties

    Directory of Open Access Journals (Sweden)

    Omer Bin Sohail


    Full Text Available Ethylene polymerization was done to form polyethylene nano-composite with nanoaluminum nitride using zirconocene catalysts. Results show that the catalytic activity is maximum at a filler loading of 15 mg nanoaluminum nitride. Differential scanning calorimeter (DSC and X-ray diffraction (XRD results show that percentage crystallinity was also marginally higher at this amount of filler. Thermal behavior of polyethylene nanocomposites (0, 15, 30, and 45 mg was studied by DSC and thermal gravimetric analyzer (TGA. Morphology of the component with 15 mg aluminium nitride is more fibrous as compared to 0 mg aluminium nitride and higher filler loading as shown by SEM images. In order to understand combustibility behavior, tests were performed on microcalorimeter. Its results showed decrease in combustibility in polyethylene nanocomposites as the filler loading increases.

  1. Physics of wurtzite nitrides and oxides passport to devices

    CERN Document Server

    Gil, Bernard


    This book gives a survey of the current state of the art of a special class of nitrides semiconductors, Wurtzite Nitride and Oxide Semiconductors. It includes properties, growth and applications. Research in the area of nitrides semiconductors is still booming although some basic materials sciences issues were solved already about 20 years ago. With the advent of modern technologies and the successful growth of nitride substrates, these materials currently experience a second birth. Advanced new applications like light-emitters, including UV operating LEDs, normally on and normally off high frequency operating transistors are expected. With progress in clean room technology, advanced photonic and quantum optic applications are envisioned in a close future. This area of research is fascinating for researchers and students in materials science, electrical engineering, chemistry, electronics, physics and biophysics. This book aims to be the ad-hoc instrument to this active field of research.

  2. Ellipsometric study of silicon nitride on gallium arsenide (United States)

    Alterovitz, S. A.; Bu-Abbud, G. H.; Woollam, J. A.; Liu, D.; Chung, Y.; Langer, D.


    A method for optimizing the sensitivity of ellipsometric measurements for thin dielectric films on semiconductors is described in simple physical terms. The technique is demonstrated for the case of sputtered silicon nitride films on gallium arsenide.

  3. Plasma-nitriding of tantalum at relatively low temperature

    Institute of Scientific and Technical Information of China (English)

    ZHANG Deyuan; LIN Qin; ZHAO Haomin; FEI Qinyong; GENG Man


    The combined quadratic orthogonal regression method of experiment design was employed to explore the effects of process parameters of plasma nitriding of tantalum such as total pressure, temperature and original hydrogen molar fraction on the hardness, roughness and structure of nitriding surfaces. The regression equations of hardness, roughness and structure were given according to the results of regression and statistic analysis. And the diffusion activation energy of nitrogen in tantalum on plasma nitriding conditions was calculated according to the experimental data of hardness of plasma-nitriding of tantalum vs time and temperature. The diffusion activation energy calculated belongs to (155.49 + 10.51)kJ/mol (783-983 K).

  4. Room temperature synthesis of biodiesel using sulfonated graphitic carbon nitride (United States)

    Baig, R. B. Nasir; Verma, Sanny; Nadagouda, Mallikarjuna N.; Varma, Rajender S.


    Sulfonation of graphitic carbon nitride (g-CN) affords a polar and strongly acidic catalyst, Sg-CN, which displays unprecedented reactivity and selectivity in biodiesel synthesis and esterification reactions at room temperature.

  5. Room temperature synthesis of biodiesel using sulfonated graphitic carbon nitride (United States)

    Sulfonation of graphitic carbon nitride (g-CN) affords a polar and strongly acidic catalyst, Sg-CN, which displays unprecedented reactivity and selectivity in biodiesel synthesis and esterification reactions at room temperature.

  6. Microcavity effects in the photoluminescence of hydrogenated amorphous silicon nitride (United States)

    Serpenguzel, Ali; Aydinli, Atilla; Bek, Alpan


    Fabry-Perot microcavities are used for the alteration of photoluminescence in hydrogenated amorphous silicon nitride grown with and without ammonia. The photoluminescence is red-near-infrared for the samples grown without ammonia, and blue-green for the samples grown with ammonia. In the Fabry- Perot microcavities, the amplitude of the photoluminescence is enhanced, while its linewidth is reduced with respect to the bulk hydrogenated amorphous silicon nitride. The microcavity was realized by a metallic back mirror and a hydrogenated amorphous silicon nitride--air or a metallic front mirror. The transmittance, reflectance, and absorbance spectra were also measured and calculated. The calculated spectra agree well with the experimental spectra. The hydrogenated amorphous silicon nitride microcavity has potential for becoming a versatile silicon based optoelectronic device such as a color flat panel display, a resonant cavity enhanced light emitting diode, or a laser.

  7. CRITICAL ASSESSMENT: Gallium nitride based visible light emitting diodes


    Oliver, Rachel A.


    This is the author accepted manuscript. It is currently under an indefinite embargo pending publication by Maney Publishing. Solid state lighting based on light-emitting diodes (LEDs) is a technology with the potential to drastically reduce energy usage, made possible by the development of gallium nitride and its alloys. However, the nitride materials family exhibits high defect densities and, in the equilibrium wurtzite crystal phase, large piezo-electric and polarisation fields arising a...

  8. Study on Titanium Nitride Film Modified for Intraocular Lens

    Institute of Scientific and Technical Information of China (English)


    Objective:To study the characteristics of the intraocular lens using ion beam sputtering depositing titanium nitride thin film on the intraocular lens(IOLs).Methods:To deposite titanium nitride thin film on the top of intraocular lens by ion beam sputtering depositing.We analyzed the surface morphology of intraocular lens through SEM and AFM.We detected intraocular lens resolution through the measurement of intraocular lens.Biocompatibility of intraocular lens is preliminary evaluated in this test.Results:T...

  9. Synthesis and Characterization of Hexagonal Boron Nitride (h- BN) Films (United States)


    Synthesis 1. Diborane- ammonia (B2H6-NH3- gases): Early results with these precursors were published in 2012. 5 Briefly, LPCVD growth of h-BN in a hot-wall...Approved for public release; distribution is unlimited. Synthesis and Characterization of Hexagonal Boron Nitride (h- BN) Films. The views, opinions and...1 ABSTRACT Number of Papers published in peer-reviewed journals: Synthesis and Characterization of Hexagonal Boron Nitride (h-BN) Films. Report Title

  10. Corrosion behavior of tantalum and its nitride in alkali solution

    Institute of Scientific and Technical Information of China (English)

    ZHANG Deyuan; LIN Qin; FEI Qinyong; ZHAO Haomin; KANG Guangyu; GENG Man


    The corrosion behavior of tantalum and its nitrides in stirring NaOH solutions was researched by potenfiostatic method, cyclic voltammetry and XPS. The results showed that the corrosion products were composed of Ta2O5 and NaTaO3.The corrosion reaction formula of tantalum and its nitrides was written according to cyclic volt-ampere curves. The electric charge transfer coefficient and the electric charge transfer number were calculated.

  11. Infrared Dielectric Properties of Low-stress Silicon Nitride (United States)

    Cataldo, Giuseppe; Beall, James A.; Cho, Hsiao-Mei; McAndrew, Brendan; Niemack, Michael D.; Wollack, Edward J.


    Silicon nitride thin films play an important role in the realization of sensors, filters, and high-performance circuits. Estimates of the dielectric function in the far- and mid-IR regime are derived from the observed transmittance spectra for a commonly employed low-stress silicon nitride formulation. The experimental, modeling, and numerical methods used to extract the dielectric parameters with an accuracy of approximately 4% are presented.

  12. Nitrogen Atom Transfer From High Valent Iron Nitrides

    Energy Technology Data Exchange (ETDEWEB)

    Johnson, Michael D. [New Mexico State Univ., Las Cruces, NM (United States); Smith, Jeremy M. [Indiana Univ., Bloomington, IN (United States)


    This report describes the synthesis and reactions of high valent iron nitrides. Organonitrogen compounds such as aziridines are useful species for organic synthesis, but there are few efficient methods for their synthesis. Using iron nitrides to catalytically access these species may allow for their synthesis in an energy-and atom-efficient manner. We have developed a new ligand framework to achieve these goals as well as providing a method for inducing previously unknown reactivity.

  13. Apparatus for the production of boron nitride nanotubes (United States)

    Smith, Michael W; Jordan, Kevin


    An apparatus for the large scale production of boron nitride nanotubes comprising; a pressure chamber containing; a continuously fed boron containing target; a source of thermal energy preferably a focused laser beam; a cooled condenser; a source of pressurized nitrogen gas; and a mechanism for extracting boron nitride nanotubes that are condensed on or in the area of the cooled condenser from the pressure chamber.

  14. Oxidation Protection of Uranium Nitride Fuel using Liquid Phase Sintering

    Energy Technology Data Exchange (ETDEWEB)

    Dr. Paul A. Lessing


    Two methods are proposed to increase the oxidation resistance of uranium nitride (UN) nuclear fuel. These paths are: (1) Addition of USi{sub x} (e.g. U3Si2) to UN nitride powder, followed by liquid phase sintering, and (2) 'alloying' UN nitride with various compounds (followed by densification via Spark Plasma Sintering or Liquid Phase Sintering) that will greatly increase oxidation resistance. The advantages (high thermal conductivity, very high melting point, and high density) of nitride fuel have long been recognized. The sodium cooled BR-10 reactor in Russia operated for 18 years on uranium nitride fuel (UN was used as the driver fuel for two core loads). However, the potential advantages (large power up-grade, increased cycle lengths, possible high burn-ups) as a Light Water Reactor (LWR) fuel are offset by uranium nitride's extremely low oxidation resistance (UN powders oxidize in air and UN pellets decompose in hot water). Innovative research is proposed to solve this problem and thereby provide an accident tolerant LWR fuel that would resist water leaks and high temperature steam oxidation/spalling during an accident. It is proposed that we investigate two methods to increase the oxidation resistance of UN: (1) Addition of USi{sub x} (e.g. U{sub 3}Si{sub 2}) to UN nitride powder, followed by liquid phase sintering, and (2) 'alloying' UN nitride with compounds (followed by densification via Spark Plasma Sintering) that will greatly increase oxidation resistance.

  15. Optical studies of cubic III-nitride structures



    The properties of cubic nitrides grown by molecular beam epitaxy (MBE) on GaAs (001) have been studied using optical and electrical techniques. The aim of these studies was the improvement of the growth techniques in order to improve the quality of grown nitrides intended for bulk substrate and optoelectronic device applications. We have also characterised hexagonal nanocolumn structures incorporating indium. Firstly, bulk films of cubic AlxGa1-xN with aluminium fractions (x) spanning the ...

  16. Colloidal Plasmonic Titanium Nitride Nanoparticles: Properties and Applications

    CERN Document Server

    Guler, Urcan; Kildishev, Alexander V; Boltasseva, Alexandra; Shalaev, Vladimir M


    Optical properties of colloidal plasmonic titanium nitride nanoparticles are examined with an eye on their photothermal via transmission electron microscopy and optical transmittance measurements. Single crystal titanium nitride cubic nanoparticles with an average size of 50 nm exhibit plasmon resonance in the biological transparency window. With dimensions optimized for efficient cellular uptake, the nanoparticles demonstrate a high photothermal conversion efficiency. A self-passivating native oxide at the surface of the nanoparticles provides an additional degree of freedom for surface functionalization.

  17. Platinum group metal nitrides and carbides: synthesis, properties and simulation

    Energy Technology Data Exchange (ETDEWEB)

    Ivanovskii, Alexander L [Institute of Solid State Chemistry, Urals Branch of the Russian Academy of Sciences, Ekaterinburg (Russian Federation)


    Experimental and theoretical data on new compounds, nitrides and carbides of the platinum group 4d and 5d metals (ruthenium, rhodium, palladium, osmium, iridium, platinum), published over the past five years are summarized. The extreme mechanical properties of platinoid nitrides and carbides, i.e., their high strength and low compressibility, are noted. The prospects of further studies and the scope of application of these compounds are discussed.

  18. Performance of chromium nitride based coatings under plastic processing conditions


    Cunha, l.; Andritschky, M.; Pischow, K.; Wang, Z.(Institute of High Energy Physics, Beijing, China); Zarychta, A.; Miranda, A. S.; A.M. Cunha


    Chromium nitride based coatings were produced in the form of monolithic and multilayer coatings, by DC and RF reactive magnetron sputtering. These coatings were deposited onto stainless steel and tool steel substrates. Chromium nitride coatings have;proved to be wear and corrosion resistant. The combination of these characteristics was necessary to protect surfaces during plastic processing. In order to select the best coatings, some mechanical and tribological tests were performed. Har...

  19. Quantum emission from hexagonal boron nitride monolayers (United States)

    Tran, Toan Trong; Bray, Kerem; Ford, Michael J.; Toth, Milos; Aharonovich, Igor


    Artificial atomic systems in solids are widely considered the leading physical system for a variety of quantum technologies, including quantum communications, computing and metrology. To date, however, room-temperature quantum emitters have only been observed in wide-bandgap semiconductors such as diamond and silicon carbide, nanocrystal quantum dots, and most recently in carbon nanotubes. Single-photon emission from two-dimensional materials has been reported, but only at cryogenic temperatures. Here, we demonstrate room-temperature, polarized and ultrabright single-photon emission from a colour centre in two-dimensional hexagonal boron nitride. Density functional theory calculations indicate that vacancy-related defects are a probable source of the emission. Our results demonstrate the unprecedented potential of van der Waals crystals for large-scale nanophotonics and quantum information processing.

  20. Thermal tuners on a Silicon Nitride platform

    CERN Document Server

    Pérez, Daniel; Baños, Rocío; Doménech, José David; Sánchez, Ana M; Cirera, Josep M; Mas, Roser; Sánchez, Javier; Durán, Sara; Pardo, Emilio; Domínguez, Carlos; Pastor, Daniel; Capmany, José; Muñoz, Pascual


    In this paper, the design trade-offs for the implementation of small footprint thermal tuners on silicon nitride are presented, and explored through measurements and supporting simulations of a photonic chip based on Mach-Zehnder Interferometers. Firstly, the electrical properties of the tuners are assessed, showing a compromise between compactness and deterioration. Secondly, the different variables involved in the thermal efficiency, switching power and heater dimensions, are analysed. Finally, with focus on exploring the limits of this compact tuners with regards to on chip component density, the thermal-cross talk is also investigated. Tuners with footprint of 270x5 {\\mu}m 2 and switching power of 350 mW are reported, with thermal-cross talk, in terms of induced phase change in adjacent devices of less than one order of magnitude at distances over 20 {\\mu}m. Paths for the improvement of thermal efficiency, power consumption and resilience of the devices are also outlined

  1. Nonlinear electronic transport behavior in Indium Nitride

    Energy Technology Data Exchange (ETDEWEB)

    Rodrigues, Cloves G., E-mail: [Departamento de Fisica, Pontificia Universidade Catolica de Goias, CP 86, 74605-010 Goiania, Goias (Brazil)


    A theoretical study on the nonlinear transport of electrons and of the nonequilibrium temperature in n-doped Indium Nitride under influence of moderate to high electric fields (in this nonlinear domain) is presented. It is based on a nonlinear quantum kinetic theory which provides a description of the dissipative phenomena developing in the system. The electric current and the mobility in the steady state are obtained, and their dependence on the electric field strength and on the concentration (that is, a mobility dependent nonlinearly on field and concentration) is obtained and analyzed. -- Highlights: Black-Right-Pointing-Pointer We have reported on the topic of nonlinear transport (electron mobility) in n-doped InN. Black-Right-Pointing-Pointer The results evidence the presence of two distinctive regimes. Black-Right-Pointing-Pointer The dependence of the mobility on the electric field is manifested through of the relaxation times.

  2. Cathodoluminescence spectra of gallium nitride nanorods. (United States)

    Tsai, Chia-Chang; Li, Guan-Hua; Lin, Yuan-Ting; Chang, Ching-Wen; Wadekar, Paritosh; Chen, Quark Yung-Sung; Rigutti, Lorenzo; Tchernycheva, Maria; Julien, François Henri; Tu, Li-Wei


    Gallium nitride [GaN] nanorods grown on a Si(111) substrate at 720°C via plasma-assisted molecular beam epitaxy were studied by field-emission electron microscopy and cathodoluminescence [CL]. The surface topography and optical properties of the GaN nanorod cluster and single GaN nanorod were measured and discussed. The defect-related CL spectra of GaN nanorods and their dependence on temperature were investigated. The CL spectra along the length of the individual GaN nanorod were also studied. The results reveal that the 3.2-eV peak comes from the structural defect at the interface between the GaN nanorod and Si substrate. The surface state emission of the single GaN nanorod is stronger as the diameter of the GaN nanorod becomes smaller due to an increased surface-to-volume ratio.

  3. Thickness dependent thermal conductivity of gallium nitride (United States)

    Ziade, Elbara; Yang, Jia; Brummer, Gordie; Nothern, Denis; Moustakas, Theodore; Schmidt, Aaron J.


    As the size of gallium nitride (GaN) transistors is reduced in order to reach higher operating frequencies, heat dissipation becomes the critical bottleneck in device performance and longevity. Despite the importance of characterizing the physics governing the thermal transport in thin GaN films, the literature is far from conclusive. In this letter, we report measurements of thermal conductivity in a GaN film with thickness ranging from 15-1000 nm grown on 4H-SiC without a transition layer. Additionally, we measure the thermal conductivity in the GaN film when it is 1 μm-thick in the temperature range of 300 < T < 600 K and use a phonon transport model to explain the thermal conductivity in this film.

  4. Laser ablation of molecular carbon nitride compounds

    Energy Technology Data Exchange (ETDEWEB)

    Fischer, D., E-mail: [Max Planck Institute for Solid State Research, Heisenbergstr. 1, 70569 Stuttgart (Germany); Schwinghammer, K. [Max Planck Institute for Solid State Research, Heisenbergstr. 1, 70569 Stuttgart (Germany); Department of Chemistry, University of Munich, LMU, Butenandtstr. 5-13, 81377 Munich (Germany); Nanosystems Initiative Munich (NIM) and Center for Nanoscience (CeNS), 80799 Munich (Germany); Sondermann, C. [Max Planck Institute for Solid State Research, Heisenbergstr. 1, 70569 Stuttgart (Germany); Department of Chemistry, University of Munich, LMU, Butenandtstr. 5-13, 81377 Munich (Germany); Lau, V.W.; Mannhart, J. [Max Planck Institute for Solid State Research, Heisenbergstr. 1, 70569 Stuttgart (Germany); Lotsch, B.V. [Max Planck Institute for Solid State Research, Heisenbergstr. 1, 70569 Stuttgart (Germany); Department of Chemistry, University of Munich, LMU, Butenandtstr. 5-13, 81377 Munich (Germany); Nanosystems Initiative Munich (NIM) and Center for Nanoscience (CeNS), 80799 Munich (Germany)


    We present a method for the preparation of thin films on sapphire substrates of the carbon nitride precursors dicyandiamide (C{sub 2}N{sub 4}H{sub 4}), melamine (C{sub 3}N{sub 6}H{sub 6}), and melem (C{sub 6}N{sub 10}H{sub 6}), using the femtosecond-pulsed laser deposition technique (femto-PLD) at different temperatures. The depositions were carried out under high vacuum with a femtosecond-pulsed laser. The focused laser beam is scanned on the surface of a rotating target consisting of the pelletized compounds. The resulting polycrystalline, opaque films were characterized by X-ray powder diffraction, infrared, Raman, and X-ray photoelectron spectroscopy, photoluminescence, SEM, and MALDI-TOF mass spectrometry measurements. The crystal structures and optical/spectroscopic results of the obtained rough films largely match those of the bulk materials.

  5. Carbon nitride frameworks and dense crystalline polymorphs (United States)

    Pickard, Chris J.; Salamat, Ashkan; Bojdys, Michael J.; Needs, Richard J.; McMillan, Paul F.


    We used ab initio random structure searching (AIRSS) to investigate polymorphism in C3N4 carbon nitride as a function of pressure. Our calculations reveal new framework structures, including a particularly stable chiral polymorph of space group P 43212 containing mixed s p2 and s p3 bonding, that we have produced experimentally and recovered to ambient conditions. As pressure is increased a sequence of structures with fully s p3 -bonded C atoms and three-fold-coordinated N atoms is predicted, culminating in a dense P n m a phase above 250 GPa. Beyond 650 GPa we find that C3N4 becomes unstable to decomposition into diamond and pyrite-structured CN2.

  6. Mechanical Hysteresis of Hexagonal Boron Nitride

    Institute of Scientific and Technical Information of China (English)

    ZHOU Aiguo; LI Haoran


    Hexagonal boron nitride (h-BN) is an important structural material with layered microstructure.Because of the plastic anisotropy,this material shows obvious mechanical hysteresis (nonlinear elastic deformation).There are hysteretic loops at the cyclical load-unload stress-strain curves of h-BN.Consequently,two hot-pressed h-BN cylinders with different textures were studied.The mechanical hysteresis is heavily texture-dependent.The area of hysteretic loop is linearly related with the square of loading stresslevel.Two minor loops attached on the hysteretic loops with the same extreme stresses have congruent shapes.It can be concluded that the mechanical hysteresis of h-BN can he explained by a Kink Nonlinear Elastic model developed from the study of a ternary carbide Ti3SiC2.

  7. Boron Nitride Nanotube: Synthesis and Applications (United States)

    Tiano, Amanda L.; Park, Cheol; Lee, Joseph W.; Luong, Hoa H.; Gibbons, Luke J.; Chu, Sang-Hyon; Applin, Samantha I.; Gnoffo, Peter; Lowther, Sharon; Kim, Hyun Jung; Danehy, Paul M.; Inman, Jennifer A.; Jones, Stephen B.; Kang, Jin Ho; Sauti, Godfrey; Thibeault, Sheila A.; Yamakov, Vesselin; Wise, Kristopher E.; Su, Ji; Fay, Catharine C.


    Scientists have predicted that carbon's immediate neighbors on the periodic chart, boron and nitrogen, may also form perfect nanotubes, since the advent of carbon nanotubes (CNTs) in 1991. First proposed then synthesized by researchers at UC Berkeley in the mid 1990's, the boron nitride nanotube (BNNT) has proven very difficult to make until now. Herein we provide an update on a catalyst-free method for synthesizing highly crystalline, small diameter BNNTs with a high aspect ratio using a high power laser under a high pressure and high temperature environment first discovered jointly by NASA/NIA JSA. Progress in purification methods, dispersion studies, BNNT mat and composite formation, and modeling and diagnostics will also be presented. The white BNNTs offer extraordinary properties including neutron radiation shielding, piezoelectricity, thermal oxidative stability (> 800 C in air), mechanical strength, and toughness. The characteristics of the novel BNNTs and BNNT polymer composites and their potential applications are discussed.

  8. Pure and doped boron nitride nanotubes

    Directory of Open Access Journals (Sweden)

    M. Terrones


    Full Text Available More than ten years ago, it was suggested theoretically that boron nitride (BN nanotubes could be produced. Soon after, various reports on their synthesis appeared and a new area of nanotube science was born. This review aims to cover the latest advances related to the synthesis of BN nanotubes. We show that these tubes can now be produced in larger amounts and, in particular, that the chemistry of BN tubes appears to be very important to the production of reinforced composites with insulating characteristics. From the theoretical standpoint, we also show that (BN-C heteronanotubes could have important implications for nanoelectronics. We believe that BN nanotubes (pure and doped could be used in the fabrication of novel devices in which pure carbon nanotubes do not perform very efficiently.

  9. Aluminum nitride for heatspreading in RF IC's (United States)

    La Spina, L.; Iborra, E.; Schellevis, H.; Clement, M.; Olivares, J.; Nanver, L. K.


    To reduce the electrothermal instabilities in silicon-on-glass high-frequency bipolar devices, the integration of thin-film aluminum nitride as a heatspreader is studied. The AlN is deposited by reactive sputtering and this material is shown to fulfill all the requirements for actively draining heat from RF IC's, i.e., it has good process compatibility, sufficiently high thermal conductivity and good electrical isolation also at high frequencies. The residual stress and the piezoelectric character of the material, both of which can be detrimental for the present application, are minimized by a suitable choice of deposition conditions including variable biasing of the substrate in a multistep deposition cycle. Films of AlN as thick as 4 μm are successfully integrated in RF silicon-on-glass bipolar junction transistors that display a reduction of more than 70% in the value of the thermal resistance.

  10. Oxygen radical functionalization of boron nitride nanosheets. (United States)

    Sainsbury, Toby; Satti, Amro; May, Peter; Wang, Zhiming; McGovern, Ignatius; Gun'ko, Yurii K; Coleman, Jonathan


    The covalent chemical functionalization of exfoliated hexagonal boron-nitride nanosheets (BNNSs) is achieved by the solution-phase oxygen radical functionalization of boron atoms in the h-BN lattice. This involves a two-step procedure to initially covalently graft alkoxy groups to boron atoms and the subsequent hydrolytic defunctionalization of the groups to yield hydroxyl-functionalized BNNSs (OH-BNNSs). Characterization of the functionalized-BNNSs using HR-TEM, Raman, UV-vis, FTIR, NMR, and TGA was performed to investigate both the structure of the BNNSs and the covalent functionalization methodology. OH-BNNSs were used to prepare polymer nanocomposites and their mechanical properties analyzed. The influence of the functional groups grafted to the surface of the BNNSs is investigated by demonstrating the impact on mechanical properties of both noncovalent and covalent bonding at the interface between the nanofiller and polymer matrixes.

  11. CEMS of nitride coatings in agressive environments

    Energy Technology Data Exchange (ETDEWEB)

    Hanzel, D. [University of Ljubljana, J. Stefan Institute (Slovenia); Agudelo, A.C.; Gancedo, J.R. [Instituto de Quimica-Fisica ' Rocasolano' , CSIC (Spain); Lakatos-Varsanyi, M. [Eoetvoes University, Department of Physical Chemistry (Hungary); Marco, J.F. [Instituto de Quimica-Fisica ' Rocasolano' , CSIC (Spain)


    The corrosion properties of single layered TiN and CrN films have been compared to bi-layered and multi-layered Ti/TiN films. XPS has showed that in humid SO{sub 2} atmosphere the best corrosion properties have been achieved by a multi-layered Ti/TiN coating. Cyclic voltammetry in acetate buffer has been applied to measure the porousity and corrosion resistance of coatings. The best results have been achieved by multi-layered Ti/TiN and CrN films. Conversion electron Moessbauer spectroscopy has been used to study the changes in the interface Fe/TiN during thermal treatment in UHV. It has been shown that the amount of iron nitrides in the interface increases with increasing temperature.

  12. Multifractal characteristics of titanium nitride thin films

    Directory of Open Access Journals (Sweden)

    Ţălu Ştefan


    Full Text Available The study presents a multi-scale microstructural characterization of three-dimensional (3-D micro-textured surface of titanium nitride (TiN thin films prepared by reactive DC magnetron sputtering in correlation with substrate temperature variation. Topographical characterization of the surfaces, obtained by atomic force microscopy (AFM analysis, was realized by an innovative multifractal method which may be applied for AFM data. The surface micromorphology demonstrates that the multifractal geometry of TiN thin films can be characterized at nanometer scale by the generalized dimensions Dq and the singularity spectrum f(α. Furthermore, to improve the 3-D surface characterization according with ISO 25178-2:2012, the most relevant 3-D surface roughness parameters were calculated. To quantify the 3-D nanostructure surface of TiN thin films a multifractal approach was developed and validated, which can be used for the characterization of topographical changes due to the substrate temperature variation.

  13. Optical processes in dilute nitrides Semiconductors; Alloys

    CERN Document Server

    Potter, R J


    This thesis is concerned with the narrow bandgap semiconductor alloys known as dilute nitrides. The initial part of this project was concerned with characterisation of chemical beam epitaxy (CBE) grown samples so that growth techniques could be refined. Early samples show evidence of structural/compositional disorder resulting from the large miscibility gap induced by nitrogen. Non-equilibrium growth was employed to overcome this, eventually resulting in improved material. In the second part of this project, steady-state and time-resolved photoluminescence, along with photomodulated reflectance were employed to investigate the optical properties of molecular beam epitaxy (MBE) grown GalnNAs, GaNAs and InGaAs quantum wells (QWs). Low temperature results show evidence of carrier localization, which was interpreted in terms of structural/compositional fluctuations induced by the nitrogen incorporation. Poor photoluminescence efficiency and rapid decay of emission kinetics indicate the presence of strong non-radi...

  14. Synthesis of reduced carbon nitride at the reduction by hydroquinone of water-soluble carbon nitride oxide (g-C{sub 3}N{sub 4})O

    Energy Technology Data Exchange (ETDEWEB)

    Kharlamov, Alexey [Frantsevich Institute for Problems of Materials Science of NASU, Krzhyzhanovsky St. 3, 03680 Kiev (Ukraine); Bondarenko, Marina, E-mail: [Frantsevich Institute for Problems of Materials Science of NASU, Krzhyzhanovsky St. 3, 03680 Kiev (Ukraine); Kharlamova, Ganna [Taras Shevchenko National University of Kiev, Volodymyrs' ka St. 64, 01601 Kiev (Ukraine); Fomenko, Veniamin [Frantsevich Institute for Problems of Materials Science of NASU, Krzhyzhanovsky St. 3, 03680 Kiev (Ukraine)


    For the first time at the reduction by hydroquinone of water-soluble carbon nitride oxide (g-C{sub 3}N{sub 4})O reduced carbon nitride (or reduced multi-layer azagraphene) is obtained. It is differed from usually synthesized carbon nitride by a significantly large (on 0.09 nm) interplanar distance is. At the same time, the chemical bonds between atoms in a heteroatomic plane of reduced carbon nitride correspond to the bonds in a synthesized g-C{sub 3}N{sub 4}. The samples of water-soluble carbon nitride oxide were synthesized under the special reactionary conditions of a pyrolysis of melamine and urea. We believe that reduced carbon nitride consists of weakly connected carbon-nitrogen monosheets (azagraphene sheets) as well as reduced (from graphene oxide) graphene contains weakly connected graphene sheets. - Graphical abstract: XRD pattern and schematic atomic model of one layer of reduced carbon nitride, carbon nitride oxide and synthesized carbon nitride. For the first time at the reduction by hydroquinone of the water-soluble carbon nitride oxide (g-C{sub 3}N{sub 4})O is obtained the reduced carbon nitride (or reduced multi-layer azagraphene). Display Omitted - Highlights: • First the reduced carbon nitride (RCN) at the reduction of the carbon nitride oxide was obtained. • Water-soluble carbon nitride oxide was reduced by hydroquinone. • The chemical bonds in a heteroatomic plane of RCN correspond to the bonds in a synthesized g-C{sub 3}N{sub 4}. • Reduced carbon nitride consists of poorly connected heteroatomic azagraphene layers.

  15. Gallium Nitride Schottky betavoltaic nuclear batteries

    Energy Technology Data Exchange (ETDEWEB)

    Lu Min, E-mail: [Su zhou Institute of Nano-technology and Nano-bionics, CAS, Su zhou 215125 (China); Zhang Guoguang [China Institute of Atomic Energy, Beijing 102413 (China); Fu Kai; Yu Guohao [Su zhou Institute of Nano-technology and Nano-bionics, CAS, Su zhou 215125 (China); Su Dan; Hu Jifeng [China Institute of Atomic Energy, Beijing 102413 (China)


    Research highlights: {yields} Gallium Nitride nuclear batteries with Ni-63 are demonstrated for the first time. {yields} Open circuit voltage of 0.1 V and conversion efficiency of 0.32% have been obtained. {yields} The limited performance is due to thin effective energy deposition layer. {yields} The output power is expected to greatly increase with growing thick GaN films. -- Abstract: Gallium Nitride (GaN) Schottky betavoltaic nuclear batteries (GNBB) are demonstrated in our work for the first time. GaN films are grown on sapphire substrates by metalorganic chemical vapor deposition (MOCVD), and then GaN Schottky diodes are fabricated by normal micro-fabrication process. Nickel with mass number of 63 ({sup 63}Ni), which emits {beta} particles, is loaded on the GaN Schottky diodes to achieve GNBB. X-ray diffraction (XRD) and photoluminescence (PL) are carried out to investigate the crystal quality for the GaN films as grown. Current-voltage (I-V) characteristics shows that the GaN Schottky diodes are not jet broken down at -200 V due to consummate fabrication processes, and the open circuit voltage of the GNBB is 0.1 V and the short circuit current density is 1.2 nA cm{sup -2}. The limited performance of the GNBB is due to thin effective energy deposition layer, which is only 206 nm to absorb very small partial energy of the {beta} particles because of the relatively high dislocation density and carrier concentration. However, the conversion efficiency of 0.32% and charge collection efficiency (CCE) of 29% for the GNBB have been obtained. Therefore, the output power of the GNBB are expected to greatly increase with growing high quality thick GaN films.

  16. Performance of the Signal Vacuum Cables of the Liquid Argon Calorimeter Endcap Cryostat Signal Feedthroughs

    CERN Document Server

    Axen, D A; Dowling, A; Dowling, A S; Fincke-Keeler, M; Hodges, T; Holness, F; Ince, T; Keeler, Richard K; Langstaf, R; Lefebvre, M; Lenckowski, M; Lindner, J; MacDonald, R; McDonald, R; Muzzeral, E; Poffenberger, P R; Van Uytven, J; Vowles, G; Wiggins, W


    This note presents of brief summary of the design specification and the performance under test of the signal vacuum cables which are used in the signal feedthroughs of the ATLAS liquid argon calorimeter endcap cryostats.

  17. Simulations of argon accident scenarios in the ATLAS experimental cavern a safety analysis

    CERN Document Server

    Balda, F


    Some characteristic accidents in the ATLAS experimental cavern (UX15) are simulated by means of STAR-CD, a code using the "Finite-Volume" method. These accidents involve different liquid argon leaks from the barrel cryostat of the detector, thus causing the dispersion of the argon into the Muon Chamber region and the evaporation of the liquid. The subsequent temperature gradients and distribution of argon concentrations, as well as their evolution in time are simulated and discussed, with the purpose of analysing the dangers related to asphyxiation and to contact with cryogenic fluids for the working personnel. A summary of the theory that stands behind the code is also given. In order to validate the models, an experimental test on a liquid argon spill performed earlier is simulated, showing that the program is able to output reliable results. At the end, some safety-related recommendations are listed.

  18. Microwave Spectrum and Molecular Structure of the ARGON-CIS-1,2-DICHLOROETHYLENE Complex (United States)

    Marshall, Mark D.; Leung, Helen O.; Nelson, Craig J.; Yoon, Leonard H.


    The non-planar molecular structure of the complex formed between the argon atom and cis-1,2-dichloroethylene is determined via analysis of its microwave spectrum. Spectra of the 35Cl and 37Cl isotopologues are observed in natural abundance and the nuclear quadrupole splitting due to the two chlorine nuclei is fully resolved. In addition, the complete quadrupole coupling tensor for the cis-1,2-dichloroethylene molecule, including the single non-zero off-diagonal element, has been determined. Unlike the argon-cis-1,2-difluoroethylene and the argon-vinyl chloride complexes, tunneling between the two equivalent non-planar configurations of argon-cis-1,2-dichloroethylene is not observed.

  19. Self-assembled heterogeneous argon/neon core-shell clusters studied by photoelectron spectroscopy. (United States)

    Lundwall, M; Pokapanich, W; Bergersen, H; Lindblad, A; Rander, T; Ohrwall, G; Tchaplyguine, M; Barth, S; Hergenhahn, U; Svensson, S; Björneholm, O


    Clusters formed by a coexpansion process of argon and neon have been studied using synchrotron radiation. Electrons from interatomic Coulombic decay as well as ultraviolet and x-ray photoelectron spectroscopy were used to determine the heterogeneous nature of the clusters and the cluster structure. Binary clusters of argon and neon produced by coexpansion are shown to exhibit a core-shell structure placing argon in the core and neon in the outer shells. Furthermore, the authors show that 2 ML of neon on the argon core is sufficient for neon valence band formation resembling the neon solid. For 1 ML of neon the authors observe a bandwidth narrowing to about half of the bulk value.

  20. Facile synthesis of efficient photocatalytic tantalum nitride nanoparticles

    Energy Technology Data Exchange (ETDEWEB)

    Wang, Zheng; Wang, Jiangting; Hou, Jungang; Huang, Kai; Jiao, Shuqiang [School of Metallurgical and Ecological Engineering, University of Science and Technology Beijing, Beijing 100083 (China); Zhu, Hongmin, E-mail: [School of Metallurgical and Ecological Engineering, University of Science and Technology Beijing, Beijing 100083 (China)


    Graphical abstract: Tantalum nitride nanoparticles as a visible-light-driven photocatalyst prepared by a novel homogeneously chemical reduction of tantalum pentachloride using sodium in liquid ammonia and the morphologies, visible-light photocatalytic properties and stability of tantalum nitride nanoparticles were investigated. Highlights: ► Tantalum nitride nanoparticles have been prepared by a homogeneously chemical reduction. ► The crystal structure of tantalum nitride was determined by Rietveld refinement and XRD patterns. ► The Tantalum nitride nanoparticle size was in the range of 20–50 nm. ► Much high photocatalytic activities of Ta{sub 3}N{sub 5} nanoparticles were obtained under visible-light irradiation. -- Abstract: Tantalum nitride nanoparticles, as visible-light photocatalysts were synthesized by a two-step homogeneously chemical reduction without any polymers and templates. The well-crystallized Ta{sub 3}N{sub 5} nanoparticles with a range of 20–50 nm in size have been characterized by a number of techniques, such as XRD, XPS, SEM, TEM, BET and UV–Vis spectrum. Most importantly, the Ta{sub 3}N{sub 5} nanoparticles with good stability exhibited higher photooxidation activities in the water splitting and degradation of methylene blue under visible light irradiation than bulk Ta{sub 3}N{sub 5} particles and commercial P25 TiO{sub 2}, demonstrating that Ta{sub 3}N{sub 5} nanoparticle is a promising candidate as a visible-light photocatalyst.

  1. Free electron lifetime achievements in Liquid Argon Imaging TPC

    CERN Document Server

    Baibussinov, B; Calligarich, E; Centro, S; Cieslik, K; Farnese, C; Fava, A; Gibin, D; Guglielmi, A; Meng, G; Pietropaolo, F; Rubbia, C; Varanini, F; Ventura, S


    A key feature for the success of the Liquid Argon TPC technology is the industrial purification against electro-negative impurities, especially Oxygen and Nitrogen remnants, which have to be initially and continuously kept at an exceptional purity. New purification techniques have been applied to a 120 litres LAr-TPC test facility in the INFN-LNL laboratory. Through-going muon tracks have been used to monitor the LAr purity. The short path length used (30 cm) is compensated by the high accuracy in the observation of the specific ionization of cosmic rays muons at sea level. A free electron lifetime of (21.4+7.3-4.3) ms, namely > 15.8 ms at 90 % C.L. has been observed under stable conditions over several weeks, corresponding to about 15 ppt (part per trillion) of Oxygen equivalent. At 500 V/cm, where the electron speed is approximately of 1.5 mm/us, the free electron lifetime >15 ms corresponds to an attenuation <15 % for a drift path of 5 m, opening the way to reliable operation of LAr TPC for exceptionall...

  2. Ab interno sclerostomy with a high-powered argon endolaser. (United States)

    Jaffe, G J; Williams, G A; Mieler, W F; Radius, R L


    We used a high-energy argon blue-green laser (15-W maximum power output) to create full-thickness sclerostomies from the region of the anterior chamber angle to the subconjunctival space in pigmented rabbits using an ab interno approach. One to four laser pulses delivered through a 300-micron noncontact fiberoptic probe produced patent sclerostomies in all 20 eyes treated using 0.1-second pulse duration and 5 to 14 W of power. No intraoperative complications were encountered. Intraocular pressure, measured in 12 animals, decreased an average of 12 mm Hg in the treated eye relative to the fellow eye on the first postoperative day. The drop in intraocular pressure was associated with formation of a functioning filtration bleb. Intraocular pressure returned to preoperative levels in ten of 12 (83%) of the animals by the fourth postoperative day, and there was an associated flattening of the filtration bleb. Histologic and radioautographic analysis indicated that the effect of the laser was focal. Tissue damage and cellular proliferative response were limited to within approximately 200 micron of the wound margin.

  3. Using History To Teach Scientific Method: The Case of Argon (United States)

    Giunta, Carmen J.


    The history of science is full of stories that exhibit scientific methodology to an exemplary degree. Such stories can be vehicles for the teaching of scientific thought to non-science majors in general-education science courses, particularly if they do not involve much technical background and are told in ordinary language. This paper illustrates the kind of lessons that can be gleaned from such stories by examining the discovery of argon, an episode replete with examples of how scientists pursue knowledge. Lord Rayleigh's use of multiple methods to determine the density of nitrogen; his persistent tracking down of a small but real anomaly in those measurements; his and William Ramsay's eventual realization that the anomaly was due to a previously unknown but relatively plentiful component of the atmosphere, an inert, monatomic gas; and Ramsay's subsequent successful search for other members of the inert gas family all illustrate the scientific approach to knowledge. This story can be presented to students in Rayleigh's words, annotated to supply background material and to pose questions.

  4. Liquid argon scintillation light studies in LArIAT

    Energy Technology Data Exchange (ETDEWEB)

    Kryczynski, Pawel [Fermilab


    The LArIAT experiment is using its Liquid Argon Time Projection Chamber (LArTPC) in the second run of data-taking at the Fermilab Test Beam Facility. The goal of the experiment is to study the response of LArTPCs to charged particles of energies relevant for planned neutrino experiments. In addition, it will help to develop and evaluate the performance of the simulation, analysis, and reconstruction software used in other LAr neutrino experiments. Particles from a tertiary beam detected by LArIAT (mainly protons, pions and muons) are identified using a set of beamline detectors, including Wire Chambers, Time of Flight counters and Cherenkov counters, as well as a simplified sampling detector used to detect muons. In its effort towards augmenting LArTPC technology for other neutrino experiments, LArIAT also takes advantage of the scintillating capabilities of LAr and is testing the possibility of using the light signal to help reconstruct calorimetric information and particle ID. In this report, we present results from these studies of the scintillation light signal to evaluate detector performance and calorimetry.

  5. TPEPICO studies near ionization threshold of argon and krypton clusters

    Energy Technology Data Exchange (ETDEWEB)

    Krauss, J.; Vries, J. de; Steger, H.; Kaiser, E.; Kamke, B.; Kamke, W. (Freiburg Univ. (Germany, F.R.). Fakultaet fuer Physik Freiburg Univ. (Germany, F.R.). Freiburger Materialforschungszentrum)


    Single photon ionization of argon- and krypton clusters has been studied in the region between threshold and the ionization potential of the corresponding atom. Synchrotron radiation from the electron storage ring BESSY is used to ionize the clusters; threshold-photoelectron-photoion-coincidence (TPEPICO)-time-of-flight technique is used to detect ions correlated with the emission of zero-kinetic-energy-electrons. The spectra of the clusters in the range of n=2 to 15 are discussed in view of the extensive fragmentation taking place in these systems. In order to characterize the properties of the clusters a method using scaling laws is applied. The principles and the deduction of Hagena's scaling parameter {Gamma}{sup *} are briefly reviewed. Using {Gamma}{sup *} an experimentally derived mean cluster size for molecular beams can be assigned. This allows one to clearly demonstrate the systematic variations of the measured spectra due to cluster fragmentation. As a general feature it is observed that, in the range studied, the peak in the measured ionization rate for a cluster ion (fragment) of a given size shifts to higher photon energies as the mean cluster size is increased. (orig.).

  6. Nonthermal atmospheric argon plasma jet effects on Escherichia coli biomacromolecules. (United States)

    Hosseinzadeh Colagar, Abasalt; Memariani, Hamed; Sohbatzadeh, Farshad; Valinataj Omran, Azadeh


    Nonthermal atmospheric plasma jet, a promising technology based on ionized gas at low temperatures, can be applied for disinfection of contaminated surfaces. In this study, Escherichia coli cells and their macromolecules were exposed to the nonthermal atmospheric argon plasma jet for different time durations. Total protein, genomic DNA, and malondialdehyde (MDA) levels of E. coli were assessed by sodium dodecyl sulfate-polyacrylamide gel electrophoresis and silver staining; agarose gel electrophoresis; and measurement of absorbance at 534 nm, respectively. After exposure, the spectroscopic results of liquid samples indicated that the survival reduction of E. coli can reach to 100 % in an exposure time of 600 s. Moreover, inactivation zones of E. coli, DNA degradation, and MDA levels were significantly increased. Additionally, banding patterns of total protein were changed and amino acid concentrations increased following ninhydrin test. The experimental results suggest that the nonthermal plasma could serve as an effective instrument for both sterilizing E. coli and degrading macromolecules from the surface of the objects being sterilized.

  7. Influence of low energy argon plasma treatment on the moisture barrier performance of hot wire-CVD grown SiNx multilayers (United States)

    Majee, Subimal; Fátima Cerqueira, Maria; Tondelier, Denis; Geffroy, Bernard; Bonnassieux, Yvan; Alpuim, Pedro; Bourée, Jean Eric


    The reliability and stability are key issues for the commercial utilization of organic photovoltaic devices based on flexible polymer substrates. To increase the shelf-lifetime of these devices, transparent moisture barriers of silicon nitride (SiNx) films are deposited at low temperature by hot wire CVD (HW-CVD) process. Instead of the conventional route based on organic/inorganic hybrid structures, this work defines a new route consisting in depositing multilayer stacks of SiNx thin films, each single layer being treated by argon plasma. The plasma treatment allows creating smoother surface and surface atom rearrangement. We define a critical thickness of the single layer film and focus our attention on the effect of increasing the number of SiNx single-layers on the barrier properties. A water vapor transmission rate (WVTR) of 2 × 10-4 g/(m2·day) is reported for SiNx multilayer stack and a physical interpretation of the plasma treatment effect is given.

  8. Thick c-BN films deposited by radio frequency magnetron sputtering in argon/nitrogen gas mixture with additional hydrogen gas (United States)

    Zhao, Yan; Gao, Wei; Xu, Bo; Li, Ying-Ai; Li, Hong-Dong; Gu, Guang-Rui; Yin, Hong


    The excellent physical and chemical properties of cubic boron nitride (c-BN) film make it a promising candidate for various industry applications. However, the c-BN film thickness restricts its practical applications in many cases. Thus, it is indispensable to develop an economic, simple and environment-friend way to synthesize high-quality thick, stable c-BN films. High-cubic-content BN films are prepared on silicon (100) substrates by radio frequency (RF) magnetron sputtering from an h-BN target at low substrate temperature. Adhesions of the c-BN films are greatly improved by adding hydrogen to the argon/nitrogen gas mixture, allowing the deposition of a film up to 5-μm thick. The compositions and the microstructure morphologies of the c-BN films grown at different substrate temperatures are systematically investigated with respect to the ratio of H2 gas content to total working gas. In addition, a primary mechanism for the deposition of thick c-BN film is proposed. Project supported by the National Natural Science Foundation of China (Grant Nos. 51572105, 61504046, and 51272224), the Scientific Research Foundation for the Returned Overseas Chinese Scholars, State Education Ministry, China, the Development and Reform Commission of Jilin Province, China (Grant No. 2015Y050), and the Scientific Research Foundation for the Returned Overseas of Jilin Province, China.

  9. Electrical properties of InGaN thin films grown by RF sputtering at different temperatures, varying nitrogen and argon partial pressure ratios (United States)

    Jakkala, Pratheesh; Kordesch, Martin E.


    Indium gallium nitride (InGaN) thin films of varying indium (In) and gallium (Ga) compositions have been fabricated on aluminosilicate glass and silicon (111) substrates using RF magnetron sputtering method at different growth temperatures, varied from 35 °C to 450 °C. Argon (Ar) and nitrogen (N2) are used as Inert and reactive gases respectively. Keeping the total pressure of gas mixture constant, partial pressures of N2 and Ar gases are varied. Ratio of Ar partial pressure to total pressure in the gas mixture is varied from 0 to 0.75. In this study, we present electrical properties of these InGaN thin films. Resistivity values of 2.6 × 10-5 to 1.68 × 10-2 Ω.cm, mobility values of 0.119 to 45.2 cm2/V.s, conductivity values of 0.595 × 103 to 37.3 × 103 mho/cm and bulk carrier concentration values -1020 to -1022/m3 are recorded that are measured through Hall-effect measurement technique.

  10. Configurational Entropy,Diffusivity and Potential Energy Landscape in Liquid Argon

    Institute of Scientific and Technical Information of China (English)

    DUAN Yong-Ping; MA Cong-Xiao; LI Jia-Yun; LI Cong; WANG Dan; LI Mei-Li; SUN Min-Hua


    The configurational entropy, diffusion coefficient, dynamics and thermodynamics fragility indices of liquid argon are calculated using molecular dynamics simulations at two densities. The relationship between dynamics and thermodynamics properties is studied. The diffusion coefficient depends linearly on configurational entropy, which is consistent with the hypothesis of Adam-Gibbs. The consistence of dynamics and thermodynamics fragility indices demonstrates that dynamical behaviour is governed by thermodynamics behaviour in glass transition of liquid argon.

  11. Effect of Ginkgo biloba on the lesions induced by retinal argon laser photocoagulation in rabbits

    Energy Technology Data Exchange (ETDEWEB)

    Clairambault, P.; Pairault, C.; Droy-Lefaix, M.T.; Magnier, B.; Magnier, M.


    In rabbits, retinal argon laser photocoagulation disrupts the arrangement of cell layers and produces interstitial edema. Photochemical and thermal energy is released with production of free oxygenated radicals that are responsible for destruction of cell membranes. Retinal argon laser photocoagulation in rabbits was used as a pharmacologic model to evaluate the protective effect of EGB 761 against membrane lesions and edema. As a strong free radicals scavengers, EGB 761 confirms its protective action on cells membranes and its anti-edema effect.

  12. Detection of scintillation light in coincidence with ionizing tracks in a liquid argon time projection chamber

    CERN Document Server

    Cennini, P; Rubbia, Carlo; Sergiampietri, F; Bueno, A G; Campanelli, M; Goudsmit, P; Rubbia, André; Periale, L; Suzuki, S; Chen, C; Chen, Y; He, K; Huang, X; Li, Z; Lu, F; Ma, J; Xu, G; Xu, Z; Zhang, C; Zhang, Q; Zheng, S; Cavanna, F; Mazza, D; Piano Mortari, G; Petrera, S; Rossi, C; Mannocchi, G; Picchi, P; Arneodo, F; De Mitri, I; Palamara, O; Cavalli, D; Ferrari, A; Sala, P R; Borio di Tigliole, A A; Cesana, A; Terrani, M; Zavattari, C; Baibusinov, S; Bettini, A; Carpanese, C; Centro, Sandro; Favaretto, D; Pascoli, D; Pepato, Adriano; Pietropaolo, F; Ventura, Sandro; Benetti, P; Calligarich, E; Campo, S; Coco, S; Dolfini, R; Ghedi, B; Gigli-Berzolari, A; Mauri, F; Mazzone, L; Montanari, C; Piazzoli, A; Rappoldi, A; Raselli, G L; Rebuzzi, D; Rossella, M; Scannicchio, D A; Torre, P; Vignoli, C; Cline, D; Otwinowski, S; Wang, H; Woo, J


    A system to detect light from liquid argon scintillation has been implemented in a small, ICARUS-like, liquid argon time projection chamber. The system, which uses a VUV-sensitive photomultiplier to collect the light, has recorded many ionizing tracks from cosmic-rays in coincidence with scintillation signals. Our measurements demonstrate that scintillation light detection can provide an effective method for absolute time measurement of events and eventually a useful trigger signal. (19 refs).

  13. Optically Forbidden Excitations of 3s Electron of Argon by Fast Electron Impact

    Institute of Scientific and Technical Information of China (English)

    朱林繁; 成华东; 刘小井; 田鹏; 苑震生; 李文斌; 徐克尊


    The electron energy loss spectrum of argon in the energy region of 24.5-30.5eV was measured at 2.5 keV impact energy. The line profile parameters of the optically forbidden excitations of 3s-1ns (n = 4-6) and 3s-1nd (n = 3-7) of argon, I.e.,Eγ,Г,q and p,were determined.

  14. Installation of signal feedthroughs on an ATLAS liquid-argon calorimeter end-cap cryostat

    CERN Multimedia

    Maximilien Brice


    The liquid-argon calorimeters used for hadronic energy measurements in the end-cap regions of the ATLAS detector are housed in cryostats to maintain the argon at the very low temperature required. The cryostats are equipped with signal feedthroughs, through which pass the electrical lines carrying signals from the calorimeters. Photos 01, 02, 03: Installation of the signal feedthroughs on the first of the two end-cap cryostats.

  15. The prospect of uranium nitride (UN) and mixed nitride fuel (UN-PuN) for pressurized water reactor (United States)

    Syarifah, Ratna Dewi; Suud, Zaki


    Design study of small Pressurized Water Reactors (PWRs) core loaded with uranium nitride fuel (UN) and mixed nitride fuel (UN-PuN), Pa-231 as burnable poison, and Americium has been performed. Pa-231 known as actinide material, have large capture cross section and can be converted into fissile material that can be utilized to reduce excess reactivity. Americium is one of minor actinides with long half life. The objective of adding americium is to decrease nuclear spent fuel in the world. The neutronic analysis results show that mixed nitride fuel have k-inf greater than uranium nitride fuel. It is caused by the addition of Pu-239 in mixed nitride fuel. In fuel fraction analysis, for uranium nitride fuel, the optimum volume fractions are 45% fuel fraction, 10% cladding and 45% moderator. In case of UN-PuN fuel, the optimum volume fractions are 30% fuel fraction, 10% cladding and 60% coolant/ moderator. The addition of Pa-231 as burnable poison for UN fuel, enrichment U-235 5%, with Pa-231 1.6% has k-inf more than one and excess reactivity of 14.45%. And for mixed nitride fuel, the lowest value of reactivity swing is when enrichment (U-235+Pu) 8% with Pa-231 0.4%, the excess reactivity value 13,76%. The fuel pin analyze for the addition of Americium, the excess reactivity value is lower than before, because Americium absorb the neutron. For UN fuel, enrichment U-235 8%, Pa-231 1.6% and Am 0.5%, the excess reactivity is 4.86%. And for mixed nitride fuel, when enrichment (U-235+Pu) 13%, Pa-231 0.4% and Am 0.1%, the excess reactivity is 11.94%. For core configuration, it is better to use heterogeneous than homogeneous core configuration, because the radial power distribution is better.

  16. Nanostructures based in boro nitride thin films deposited by PLD onto Si/Si{sub 3}N{sub 4}/DLC substrate

    Energy Technology Data Exchange (ETDEWEB)

    Roman, W S; Riascos, H [Grupo Plasma, Laser y Aplicaciones, Universidad Tecnologica de Pereira (Colombia); Caicedo, J C [Grupo de PelIculas Delgadas, Universidad del Valle, Cali (Colombia); Ospina, R [Laboratorio de Plasma, Universidad Nacional de Colombia, sede Manizales (Colombia); Tirado-MejIa, L, E-mail: [Laboratorio de Optoelectronica, Universidad del Quindio (Colombia)


    Diamond-like carbon and boron nitride were deposited like nanostructered bilayer on Si/Si{sub 3}N{sub 4} substrate, both with (100) crystallographic orientation, these films were deposited through pulsed laser technique (Nd: YAG: 8 Jcm{sup -2}, 9ns). Graphite (99.99%) and boron nitride (99.99%) targets used to growth the films in argon atmosphere. The thicknesses of bilayer were determined with a perfilometer, active vibration modes were analyzed using infrared spectroscopy (FTIR), finding bands associated around 1400 cm{sup -1} for B - N bonding and bands around 1700 cm{sup -1} associated with C=C stretching vibrations of non-conjugated alkenes and azometinic groups, respectively. The crystallites of thin films were analyzed using X-ray diffraction (XRD) and determinated the h-BN (0002), alpha-Si{sub 3}N{sub 4} (101) phases. The aim of this study is to relate the dependence on physical and chemical characteristics of the system Si/Si{sub 3}N{sub 4}/DLC/BN with gas pressure adjusted at the 1.33, 2.67 and 5.33 Pa values.

  17. Results from the first use of low radioactivity argon in a dark matter search (United States)

    Agnes, P.; Agostino, L.; Albuquerque, I. F. M.; Alexander, T.; Alton, A. K.; Arisaka, K.; Back, H. O.; Baldin, B.; Biery, K.; Bonfini, G.; Bossa, M.; Bottino, B.; Brigatti, A.; Brodsky, J.; Budano, F.; Bussino, S.; Cadeddu, M.; Cadonati, L.; Cadoni, M.; Calaprice, F.; Canci, N.; Candela, A.; Cao, H.; Cariello, M.; Carlini, M.; Catalanotti, S.; Cavalcante, P.; Chepurnov, A.; Cocco, A. G.; Covone, G.; Crippa, L.; D'Angelo, D.; D'Incecco, M.; Davini, S.; De Cecco, S.; De Deo, M.; De Vincenzi, M.; Derbin, A.; Devoto, A.; Di Eusanio, F.; Di Pietro, G.; Edkins, E.; Empl, A.; Fan, A.; Fiorillo, G.; Fomenko, K.; Forster, G.; Franco, D.; Gabriele, F.; Galbiati, C.; Giganti, C.; Goretti, A. M.; Granato, F.; Grandi, L.; Gromov, M.; Guan, M.; Guardincerri, Y.; Hackett, B. R.; Herner, K.; Hungerford, E. V.; Ianni, Al.; Ianni, An.; James, I.; Jollet, C.; Keeter, K.; Kendziora, C. L.; Kobychev, V.; Koh, G.; Korablev, D.; Korga, G.; Kubankin, A.; Li, X.; Lissia, M.; Lombardi, P.; Luitz, S.; Ma, Y.; Machulin, I. N.; Mandarano, A.; Mari, S. M.; Maricic, J.; Marini, L.; Martoff, C. J.; Meregaglia, A.; Meyers, P. D.; Miletic, T.; Milincic, R.; Montanari, D.; Monte, A.; Montuschi, M.; Monzani, M.; Mosteiro, P.; Mount, B. J.; Muratova, V. N.; Musico, P.; Napolitano, J.; Nelson, A.; Odrowski, S.; Orsini, M.; Ortica, F.; Pagani, L.; Pallavicini, M.; Pantic, E.; Parmeggiano, S.; Pelczar, K.; Pelliccia, N.; Perasso, S.; Pocar, A.; Pordes, S.; Pugachev, D. A.; Qian, H.; Randle, K.; Ranucci, G.; Razeto, A.; Reinhold, B.; Renshaw, A. L.; Romani, A.; Rossi, B.; Rossi, N.; Rountree, D.; Sablone, D.; Saggese, P.; Saldanha, R.; Sands, W.; Sangiorgio, S.; Savarese, C.; Segreto, E.; Semenov, D. A.; Shields, E.; Singh, P. N.; Skorokhvatov, M. D.; Smirnov, O.; Sotnikov, A.; Stanford, C.; Suvorov, Y.; Tartaglia, R.; Tatarowicz, J.; Testera, G.; Tonazzo, A.; Trinchese, P.; Unzhakov, E. V.; Vishneva, A.; Vogelaar, B.; Wada, M.; Walker, S.; Wang, H.; Wang, Y.; Watson, A. W.; Westerdale, S.; Wilhelmi, J.; Wojcik, M. M.; Xiang, X.; Xu, J.; Yang, C.; Yoo, J.; Zavatarelli, S.; Zec, A.; Zhong, W.; Zhu, C.; Zuzel, G.; DarkSide Collaboration


    Liquid argon is a bright scintillator with potent particle identification properties, making it an attractive target for direct-detection dark matter searches. The DarkSide-50 dark matter search here reports the first WIMP search results obtained using a target of low-radioactivity argon. DarkSide-50 is a dark matter detector, using a two-phase liquid argon time projection chamber, located at the Laboratori Nazionali del Gran Sasso. The underground argon is shown to contain 39Ar at a level reduced by a factor (1.4 ±0.2 )×103 relative to atmospheric argon. We report a background-free null result from (2616 ±43 ) kg d of data, accumulated over 70.9 live days. When combined with our previous search using an atmospheric argon, the 90% C.L. upper limit on the WIMP-nucleon spin-independent cross section, based on zero events found in the WIMP search regions, is 2.0 ×10-44 cm2 (8.6 ×10-44 cm2 , 8.0 ×10-43 cm2 ) for a WIMP mass of 100 GeV /c2 (1 TeV /c2 , 10 TeV /c2 ).

  18. Low radioactivity argon dark matter search results from the DarkSide-50 experiment

    CERN Document Server

    Agnes, P; Albuquerque, I F M; Alexander, T; Alton, A K; Arisaka, K; Back, H O; Baldin, B; Biery, K; Bonfini, G; Bossa, M; Bottino, B; Brigatti, A; Brodsky, J; Budano, F; Bussino, S; Cadeddu, M; Cadonati, L; Cadoni, M; Calaprice, F; Canci, N; Candela, A; Cao, H; Cariello, M; Carlini, M; Catalanotti, S; Cavalcante, P; Chepurnov, A; Cocco, A G; Covone, G; Crippa, L; D'Angelo, D; D'Incecco, M; Davini, S; De Cecco, S; De Deo, M; De Vincenzi, M; Derbin, A; Devoto, 25 A; Di Eusanio, F; Di Pietro, G; Edkins, E; Empl, A; Fan, A; Fiorillo, G; Fomenko, K; Forster, G; Franco, D; Gabriele, F; Galbiati, C; Giganti, C; Goretti, A M; Granato, F; Grandi, L; Gromov, M; Guan, M; Guardincerri, Y; Hackett, B R; Herner, K; Hungerford, E V; Ianni, Al; Ianni, An; James, I; Jollet, C; Keeter, K; Kendziora, C L; Kobychev, V; Koh, G; Korablev, D; Korga, G; Kubankin, A; Li, X; Lissia, M; Lombardi, P; Luitz, S; Ma, Y; Machulin, I N; Mandarano, A; Mari, S M; Maricic, J; Marini, L; Martoff, C J; Meregaglia, A; Meyers, P D; Miletic, T; Milincic, R; Montanari, D; Monte, A; Montuschi, M; Monzani, M; Mosteiro, P; Mount, B J; Muratova, V N; Musico, P; Napolitano, J; Nelson, A; Odrowski, S; Orsini, M; Ortica, F; Pagani, L; Pallavicini, M; Pantic, E; Parmeggiano, S; Pelczar, K; Pelliccia, N; Perasso, S; Pocar, A; Pordes, S; Pugachev, D A; Qian, H; Randle, K; Ranucci, G; Razeto, A; Reinhold, B; Renshaw, A L; Romani, A; Rossi, B; Rossi, N; Rountree, D; Sablone, D; Saggese, P; Saldanha, R; Sands, W; Sangiorgio, S; Savarese, C; Segreto, E; Semenov, D A; Shields, E; Singh, P N; Skorokhvatov, M D; Smallcomb, M; Smirnov, O; Sotnikov, A; Stanford, C; Suvorov, Y; Tartaglia, R; Tatarowicz, J; Testera, G; Tonazzo, A; Trinchese, P; Unzhakov, E V; Vishneva, A; Vogelaar, B; Wada, M; Walker, S; Wang, H; Wang, Y; Watson, A W; Westerdale, S; Wilhelmi, J; Wojcik, M M; Xiang, X; Xu, J; Yang, C; Yoo, J; Zavatarelli, S; Zec, A; Zhong, W; Zhu, C; Zuzel, G


    The DarkSide-50 dark matter search reports the first results obtained using a target of low-radioactivity argon extracted from underground sources. The experiment is located at the Laboratori Nazionali del Gran Sasso and uses a two-phase time projection chamber as a detector. A total of 155 kg of low radioactivity argon has been obtained, and we have determined that underground argon is depleted in Ar-39 by a factor (1.4 +- 0.2) x 10^3 relative to atmospheric argon. The underground argon was also found to contain (2.05 +- 0.13) mBq/kg of Kr-85. We found no evidence for dark matter in the form of WIMPs in 70.9 live-days of data with a fiducial mass of (36.9 +- 0.6) kg. When combined with our preceding search with an atmospheric argon target, we set a 90 % C.L. upper limit on the WIMP-nucleon spin-independent cross section of 2.0 x 10^-44 cm^2 (8.6 x 10^-44 cm^2, 8.0 x 10^-43 cm^2 ) for a WIMP mass of 100 GeV/c^2 (1 TeV/c^2 , 10 TeV/c^2 ).

  19. Condensed argon isentropic compression with ultrahigh magnetic field pressure: Experimental design. Post-shot report

    Energy Technology Data Exchange (ETDEWEB)

    Bykov, A.I.; Boriskov, G.V.; Dolotenko, M.I. [All-Russian Research Inst. of Experimental Physics, Sarov (Russian Federation)] [and others


    This report continues the series of work devoted to experimental study of a high-dense condensed argon state. Remember that according to work of Kwon et. al., hexagonal close-packed structure is profitable in terms of energy rather than face-centered argon structure (stable with zero pressure). What is most interesting and intriguing here is the issue of possible argon metallization, when it is compressed up to the densities more than 9.17 g/cm{sup 3}. In the experiment of 1995 (the arrangement and data are described in a cited reference) the authors recorded appearance of conductivity in argon, which is non-conductive in the initial state, when it is compressed more than a factor of four. The peak value of argon specific conductivity recorded in this experiment did not exceed 10 (Ohm x cm){sup {minus}1}. This value of conductivity is characteristic of semiconductors, but not metals, which have 10{sup 4} (Ohm x cm){sup {minus}1}. At this stage of the work the main attention is paid to recording of argon conductive state and studying the possibilities of multiframed radiography of the sample in the compressed state.

  20. Generation and Characteristics of IV-VI transition Metal Nitride and Carbide Nanoparticles using a Reactive Mesoporous Carbon Nitride

    KAUST Repository

    Alhajri, Nawal Saad


    Interstitial nitrides and carbides of early transition metals in groups IV–VI exhibit platinum-like electronic structures, which make them promising candidates to replace noble metals in various catalytic reactions. Herein, we present the preparation and characterization of nano-sized transition metal nitries and carbides of groups IV–VI (Ti, V, Nb, Ta, Cr, Mo, and W) using mesoporous graphitic carbon nitride (mpg-C3N4), which not only provides confined spaces for restricting primary particle size but also acts as a chemical source of nitrogen and carbon. We studied the reactivity of the metals with the template under N2 flow at 1023 K while keeping the weight ratio of metal to template constant at unity. The produced nanoparticles were characterized by powder X-ray diffraction, CHN elemental analysis, nitrogen sorption, X-ray photoelectron spectroscopy, and transmission electron microscopy. The results show that Ti, V, Nb, Ta, and Cr form nitride phases with face centered cubic structure, whereas Mo and W forme carbides with hexagonal structures. The tendency to form nitride or carbide obeys the free formation energy of the transition metal nitrides and carbides. This method offers the potential to prepare the desired size, shape and phase of transition metal nitrides and carbides that are suitable for a specific reaction, which is the chief objective of materials chemistry.

  1. Influence of Additive Gas on Electrical and Optical Characteristics of Non-equilibrium Atmospheric Pressure Argon Plasma Jet%Influence of Additive Gas on Electrical and Optical Characteristics of Non-equilibrium Atmospheric Pressure Argon Plasma Jet

    Institute of Scientific and Technical Information of China (English)

    费小猛; Shin-ichi KURODA; Yuki KONDO; Tamio MORI; Katsuhiko HOSOI


    Electrical and optical properties of an argon plasma jet were characterized. In particular, effects of an additive gas, namely nitrogen or oxygen, on these properties were studied in detail. The plasma jet was found to be of a glow-like discharge, which scarcely changed upon the injection of an additive gas, either directly or through a glass capillary. Optical emission spectroscopy characterization revealed that excited argon atoms were the predominant active species in this plasma jet. Metastable argon atoms were highly quenched, and N2(C3yIu) became the main energy carrier following nitrogen injection. When oxygen was added to the afterglow zone through a glass capillary, no significant quenching effect was observed and the number of oxygen atoms decreased with the increase in oxygen concentration. Finally, to demonstrate an application of this plasma jet, a high-density polyethylene surface was treated with argon, argon/nitrogen, and argon/oxygen plasmas.

  2. Alternating current electrical properties of Argon plasma treated jute

    Directory of Open Access Journals (Sweden)

    Md. Masroor Anwer


    Full Text Available Low temperature plasma (LTP treatment, a kind of environment friendly surface modification technique, was applied to biodegradable and environment friendly jute fibre with the use of nonpolymerizing gas, namely argon, at various discharge power levels and exposure times with a definite flow rate. Scanning electron microscopy (SEM microphotographs reveal that the roughness of the fibre surfaces increases with the increase of discharge power and exposure time. This is caused due to the bombardment of high energetic ions on the fibre surface and the fibres become sputtered. The capacitance and the electrical conductance of raw and LTP treated jute fibre were measured as a function of frequency at room temperature. The dielectric constant, conductivity, dielectric loss-tangent and the surface morphology of raw and LTP treated jute as a function of frequency were studied at room temperature. It was observed that for all the samples the dielectric constant almost constant at lower frequencies and then decreases gradually in the high frequency region. In addition, dielectric constant increases with the increase of plasma treatment time as well as discharge power. It is also observed for all the samples that the conductivity increases as the frequency increases with a lower slope in the low frequency region and with a higher slope in the higher frequency region. In addition, the conductivity decreases with the increase of plasma exposure time as well as discharge power. The conductivity increases with frequency due to the hopping mechanism of electrons. The dependence of the dielectric loss-tangent with frequency at different treatment times and discharge powers for all the jute samples show small relaxation peaks in the very low frequency region. The dielectric loss-tangent decreases with the increase of both plasma treatment time and discharge power. In addition, the relaxation peaks are shifted to the higher frequency region as the plasma treatment

  3. Scintillation light from cosmic-ray muons in liquid argon

    Energy Technology Data Exchange (ETDEWEB)

    Whittington, Denver Wade [Indiana Univ., Bloomington, IN (United States). Physics Dept.; Mufson, S. [Indiana Univ., Bloomington, IN (United States). Astronomy Dept.; Howard, B. [Indiana Univ., Bloomington, IN (United States). Physics Dept.


    This paper reports the results of an experiment to directly measure the time-resolved scintillation signal from the passage of cosmic-ray muons through liquid argon. Scintillation light from these muons is of value to studies of weakly-interacting particles in neutrino experiments and dark matter searches. The experiment was carried out at the TallBo dewar facility at Fermilab using prototype light guide detectors and electronics developed for the Deep Underground Neutrino Experiment. Two models are presented for the time structure of the scintillation light, a phenomenological model and a physically-motivated model. Both models find tT = 1:52 ms for the decay time constant of the Ar 2 triplet state. These models also show that the identification of the “early” light fraction in the phenomenological model, FE 25% of the signal, with the total light from singlet decays is an underestimate. The total fraction of singlet light is FS 36%, where the increase over FE is from singlet light emitted by the wavelength shifter through processes with long decay constants. The models were further used to compute the experimental particle identification parameter Fprompt, the fraction of light coming in a short time window after the trigger compared with the light in the total recorded waveform. The models reproduce quite well the typical experimental value 0.3 found by dark matter and double b-decay experiments, which suggests this parameter provides a robust metric for discriminating electrons and muons from more heavily ionizing particles.

  4. Imitators of plutonium and americium in a mixed uranium- plutonium nitride fuel (United States)

    Nikitin, S. N.; Shornikov, D. P.; Tarasov, B. A.; Baranov, V. G.; Burlakova, M. A.


    Uranium nitride and mix uranium nitride (U-Pu)N is most popular nuclear fuel for Russian Fast Breeder Reactor. The works in hot cells associated with the radiation exposure of personnel and methodological difficulties. To know the main physical-chemical properties of uranium-plutonium nitride it necessary research to hot cells. In this paper, based on an assessment of physicochemical and thermodynamic properties of selected simulators Pu and Am. Analogues of Pu is are Ce and Y, and analogues Am - Dy. The technique of obtaining a model nitride fuel based on lanthanides nitrides and UN. Hydrogenation-dehydrogenation- nitration method of derived powders nitrides uranium, cerium, yttrium and dysprosium, held their mixing, pressing and sintering, the samples obtained model nitride fuel with plutonium and americium imitation. According to the results of structural studies have shown that all the samples are solid solution nitrides rare earth (REE) elements in UN.

  5. First principles calculations of interstitial and lamellar rhenium nitrides

    Energy Technology Data Exchange (ETDEWEB)

    Soto, G., E-mail: [Universidad Nacional Autonoma de Mexico, Centro de Nanociencias y Nanotecnologia, Km 107 Carretera Tijuana-Ensenada, Ensenada Baja California (Mexico); Tiznado, H.; Reyes, A.; Cruz, W. de la [Universidad Nacional Autonoma de Mexico, Centro de Nanociencias y Nanotecnologia, Km 107 Carretera Tijuana-Ensenada, Ensenada Baja California (Mexico)


    Highlights: Black-Right-Pointing-Pointer The possible structures of rhenium nitride as a function of composition are analyzed. Black-Right-Pointing-Pointer The alloying energy is favorable for rhenium nitride in lamellar arrangements. Black-Right-Pointing-Pointer The structures produced by magnetron sputtering are metastable variations. Black-Right-Pointing-Pointer The structures produced by high-pressure high-temperature are stable configurations. Black-Right-Pointing-Pointer The lamellar structures are a new category of interstitial dissolutions. - Abstract: We report here a systematic first principles study of two classes of variable-composition rhenium nitride: i, interstitial rhenium nitride as a solid solution and ii, rhenium nitride in lamellar structures. The compounds in class i are cubic and hexagonal close-packed rhenium phases, with nitrogen in the octahedral and tetrahedral interstices of the metal, and they are formed without changes to the structure, except for slight distortions of the unit cells. In the compounds in class ii, by contrast, the nitrogen inclusion provokes stacking faults in the parent metal structure. These faults create trigonal-prismatic sites where the nitrogen residence is energetically favored. This second class of compounds produces lamellar structures, where the nitrogen lamellas are inserted among multiple rhenium layers. The Re{sub 3}N and Re{sub 2}N phases produced recently by high-temperature and high-pressure synthesis belong to this class. The ratio of the nitrogen layers to the rhenium layers is given by the composition. While the first principle calculations point to higher stability for the lamellar structures as opposed to the interstitial phases, the experimental evidence presented here demonstrates that the interstitial classes are synthesizable by plasma methods. We conclude that rhenium nitrides possess polymorphism and that the two-dimensional lamellar structures might represent an emerging class of materials

  6. Synthesis of gallium nitride nanostructures by nitridation of electrochemically deposited gallium oxide on silicon substrate. (United States)

    Ghazali, Norizzawati Mohd; Yasui, Kanji; Hashim, Abdul Manaf


    Gallium nitride (GaN) nanostructures were successfully synthesized by the nitridation of the electrochemically deposited gallium oxide (Ga2O3) through the utilization of a so-called ammoniating process. Ga2O3 nanostructures were firstly deposited on Si substrate by a simple two-terminal electrochemical technique at a constant current density of 0.15 A/cm(2) using a mixture of Ga2O3, HCl, NH4OH and H2O for 2 h. Then, the deposited Ga2O3 sample was ammoniated in a horizontal quartz tube single zone furnace at various ammoniating times and temperatures. The complete nitridation of Ga2O3 nanostructures at temperatures of 850°C and below was not observed even the ammoniating time was kept up to 45 min. After the ammoniating process at temperature of 900°C for 15 min, several prominent diffraction peaks correspond to hexagonal GaN (h-GaN) planes were detected, while no diffraction peak of Ga2O3 structure was detected, suggesting a complete transformation of Ga2O3 to GaN. Thus, temperature seems to be a key parameter in a nitridation process where the deoxidization rate of Ga2O3 to generate gaseous Ga2O increase with temperature. The growth mechanism for the transformation of Ga2O3 to GaN was proposed and discussed. It was found that a complete transformation can not be realized without a complete deoxidization of Ga2O3. A significant change of morphological structures takes place after a complete transformation of Ga2O3 to GaN where the original nanorod structures of Ga2O3 diminish, and a new nanowire-like GaN structures appear. These results show that the presented method seems to be promising in producing high-quality h-GaN nanostructures on Si.

  7. Effect of variation of silicon nitride passivation layer on electron irradiated aluminum gallium nitride/gallium nitride HEMT structures (United States)

    Jackson, Helen C.

    Silicon nitride passivation on AlGaNGaN heterojunction devices can improve performance by reducing electron traps at the surface. This research studies the effect of displacement damage caused by 1 MeV electron irradiation as a function of the variation of passivation layer thickness and heterostructure layer variation on AlGaN/GaN HEMTs. The effects of passivation layer thickness are investigated at thicknesses of 0, 20, 50 and 120 nanometers on AlGaNGaN test structures with either an AlN nucleation layer or a GaN cap structures which are then measured before and immediately after 1.0 MeV electron irradiation at fluences of 1016 cm-2. Hall system measurements are used to observe changes in mobility, carrier concentration and conductivity as a function of Si3N4 thickness. Models are developed that relate the device structure and passivation layer under 1 MeV radiation to the observed changes to the measured photoluminescence and deep level transient spectroscopy. A software model is developed to determine the production rate of defects from primary 1 MeV electrons that can be used for other energies and materials. The presence of either a 50 or 120 nm Si 3N4 passivation layer preserves the channel current for both and appears to be optimal for radiation hardness.

  8. Corrosion resistance of zirconium oxynitride coatings deposited via DC unbalanced magnetron sputtering and spray pyrolysis-nitriding

    Energy Technology Data Exchange (ETDEWEB)

    Cubillos, G.I., E-mail: [Department of Chemistry, Group of Materials and Chemical Processes, Universidad Nacional de Colombia, Av. Cra. 30 No 45-03, Bogotá (Colombia); Bethencourt, M., E-mail: [Department of Materials Science, Metallurgy Engineering and Inorganic Chemistry, International Campus of Excellence of the Sea - CEI-MAR, University of Cadiz, Avda. República Saharaui s/n, 11510 Puerto Real, Cádiz (Spain); Olaya, J.J., E-mail: [Faculty of Engineering, Group of Materials and Chemical Processes, Universidad Nacional de Colombia, Av. Cra. 30 No 45-03, Bogotá (Colombia)


    Highlights: • New ZrO{sub x}N{sub y} films were deposited on stainless steel 316L using PSY-N and UBMS. • ZrO{sub x}N{sub y} rhombohedral polycrystalline film grew with PSY-N. • Zr{sub 2}ON{sub 2} crystalline structures, mostly oriented along the (2 2 2) plane, grew with UBMS. • Layers improved corrosion behavior in NaCl media, especially those deposited by UBMS. - Abstract: ZrO{sub x}N{sub y}/ZrO{sub 2} thin films were deposited on stainless steel using two different methods: ultrasonic spray pyrolysis-nitriding (SPY-N) and the DC unbalanced magnetron sputtering technique (UBMS). Using the first method, ZrO{sub 2} was initially deposited and subsequently nitrided in an anhydrous ammonia atmosphere at 1023 K at atmospheric pressure. For UBMS, the film was deposited in an atmosphere of air/argon with a Φair/ΦAr flow ratio of 3.0. Structural analysis was carried out through X-ray diffraction (XRD), and morphological analysis was done through scanning electron microscopy (SEM) and atomic force microscopy (AFM). Chemical analysis was carried out using X-ray photoelectron spectroscopy (XPS). ZrO{sub x}N{sub y} rhombohedral polycrystalline film was produced with spray pyrolysis-nitriding, whereas using the UBMS technique, the oxynitride films grew with cubic Zr{sub 2}ON{sub 2} crystalline structures preferentially oriented along the (2 2 2) plane. Upon chemical analysis of the surface, the coatings exhibited spectral lines of Zr3d, O1s, and N1s, characteristic of zirconium oxynitride/zirconia. SEM analysis showed the homogeneity of the films, and AFM showed morphological differences according to the deposition technique of the coatings. Zirconium oxynitride films enhanced the stainless steel's resistance to corrosion using both techniques. The protective efficacy was evaluated using electrochemical techniques based on linear polarization (LP). The results indicated that the layers provide good resistance to corrosion when exposed to chloride

  9. Evanescent field phase shifting in a silicon nitride waveguide using a coupled silicon slab

    DEFF Research Database (Denmark)

    Jensen, Asger Sellerup; Oxenløwe, Leif Katsuo; Green, William M. J.


    An approach for electrical modulation of low-loss silicon nitride waveguides is proposed, using a silicon nitride waveguide evanescently loaded with a thin silicon slab. The thermooptic phase-shift characteristics are investigated in a racetrack resonator configuration.......An approach for electrical modulation of low-loss silicon nitride waveguides is proposed, using a silicon nitride waveguide evanescently loaded with a thin silicon slab. The thermooptic phase-shift characteristics are investigated in a racetrack resonator configuration....

  10. DFT Studies on Electronic Structures of Boro-Nitride-Carbon Nanotubes

    Institute of Scientific and Technical Information of China (English)

    YAN Ming; HUANG Chun-Hui


    In this paper, the configurations of Boro-Nitride-Carbon nanotubes with BNC2 composition were optimized by ROHF method. According to the density functional theory, the electronic structures of Boro-Nitride-Carbon nanotubes were calculated by DFT/ROB3LYP method. By analyzing the energy gap, density of electronic state and bonding maps of atoms, the conductive properties of Boro-Nitride-Carbon nanotubes were obtained, and compared with those of carbon nanotubes and other Boro-Nitride nanotubes.

  11. Electroless plating of thin gold films directly onto silicon nitride thin films and into micropores. (United States)

    Whelan, Julie C; Karawdeniya, Buddini Iroshika; Bandara, Y M Nuwan D Y; Velleco, Brian D; Masterson, Caitlin M; Dwyer, Jason R


    A method to directly electrolessly plate silicon-rich silicon nitride with thin gold films was developed and characterized. Films with thicknesses plating free-standing ultrathin silicon nitride membranes, and we successfully plated the interior walls of micropore arrays in 200 nm thick silicon nitride membranes. The method is thus amenable to coating planar, curved, and line-of-sight-obscured silicon nitride surfaces.

  12. Technical assistance for development of thermally conductive nitride filler for epoxy molding compounds

    Energy Technology Data Exchange (ETDEWEB)

    Ryu, Ho Jin; Song, Kee Chan; Jung, In Ha


    Technical assistance was carried out to develop nitride filler for thermally conductive epoxy molding compounds. Carbothermal reduction method was used to fabricate silicon nitride powder from mixtures of silica and graphite powders. Microstructure and crystal structure were observed by using scanning electron microscopy and x-ray diffraction technique. Thermal properties of epoxy molding compounds containing silicon nitride were measured by using laser flash method. Fabrication process of silicon nitride nanowire was developed and was applied to a patent.

  13. Discovery of underground argon with low level of radioactive 39Ar and possible applications to WIMP dark matter detectors

    CERN Document Server

    Galbiati, C


    We report on the first measurement of 39Ar in argon from underground natural gas reservoirs. The gas stored in the US National Helium Reserve was found to contain a low level of 39Ar. The ratio of 39Ar to stable argon was found to be <=4x10-17 (84% C.L.), less than 5% the value in atmospheric argon (39Ar/Ar=8x10-16). The total quantity of argon currently stored in the National Helium Reserve is estimated at 1000 tons. 39Ar represents one of the most important backgrounds in argon detectors for WIMP dark matter searches. The findings reported demonstrate the possibility of constructing large multi-ton argon detectors with low radioactivity suitable for WIMP dark matter searches.

  14. Turbostratic boron nitride coated on high-surface area metal oxide templates

    DEFF Research Database (Denmark)

    Klitgaard, Søren Kegnæs; Egeblad, Kresten; Brorson, M.


    Boron nitride coatings on high-surface area MgAl2O4 and Al2O3 have been synthesized and characterized by transmission electron microscopy and by X-ray powder diffraction. The metal oxide templates were coated with boron nitride using a simple nitridation in a flow of ammonia starting from ammonium...

  15. Imaging Gallium Nitride High Electron Mobility Transistors to Identify Point Defects (United States)


    REPORT TYPE AND DATES COVERED Master’s Thesis 4. TITLE AND SUBTITLE IMAGING GALLIUM NITRIDE HIGH ELECTRON MOBILITY TRANSISTORS TO IDENTIFY...Identification of these trends will assist in the improvement of gallium nitride HEMT fabrication processes leading to the development of more...reliable devices. 14. SUBJECT TERMS Electron microscopy, Gallium Nitride (GaN), high electron mobility transistor (HEMT

  16. Corrosion behaviour of the 42CrMo4 Steel Nitrided by Plasma


    Okba Belahssen; Abdelouahed Chala; Said Benramache


    This paper presents corrosion behaviour of alloy 42CrMo4 steel nitrided by plasma. Different samples were tested: untreated and plasma nitrided samples. The corrosion behaviour was evaluated by electrochemical techniques (potentiodynamic curves and electrochemical impedance spectroscopy). The corrosion tests were carried out in acid chloride solution 1M. The best corrosion protection was observed for samples nitrided.

  17. Corrosion behaviour of the 42CrMo4 Steel Nitrided by Plasma

    Directory of Open Access Journals (Sweden)

    Okba Belahssen


    Full Text Available This paper presents corrosion behaviour of alloy 42CrMo4 steel nitrided by plasma. Different samples were tested: untreated and plasma nitrided samples. The corrosion behaviour was evaluated by electrochemical techniques (potentiodynamic curves and electrochemical impedance spectroscopy. The corrosion tests were carried out in acid chloride solution 1M. The best corrosion protection was observed for samples nitrided.

  18. Performance analysis of nitride alternative plasmonic materials for localized surface plasmon applications

    DEFF Research Database (Denmark)

    Guler, U.; Naik, G. V.; Boltasseva, Alexandra


    . Titanium nitride and zirconium nitride, which were recently suggested as alternative plasmonic materials in the visible and near-infrared ranges, are compared to the performance of gold. In contrast to the results from quasistatic methods, both nitride materials are very good alternatives to the usual...

  19. Effective Duration of Gas Nitriding Process on AISI 316L for the Formation of a Desired Thickness of Surface Nitrided Layer

    Directory of Open Access Journals (Sweden)

    Mahmoud Hassan R. S.


    Full Text Available High temperature gas nitriding performed on AISI 316L at the temperature of 1200°C. The microstructure of treated AISI 316L samples were observed to identify the formation of the microstructure of nitrided surface layer. The grain size of austenite tends to be enlarged when the nitriding time increases, but the austenite single phase structure is maintained even after the long-time solution nitriding. Using microhardness testing, the hardness values drop to the center of the samples. The increase in surface hardness is due to the high nitrogen concentration at or near the surface. At 245HV, the graph of the effective duration of nitriding process was plotted to achieve the maximum depth of nitrogen diffuse under the surface. Using Sigma Plot software best fit lines of the experimental result found and plotted to find out effective duration of nitriding equation as Y=1.9491(1-0.7947x, where Y is the thickness of nitrided layer below the surface and X is duration of nitriding process. Based on this equation, the duration of gas nitriding process can be estimated to produce desired thickness of nitrided layer.

  20. Two-dimensional gallium nitride realized via graphene encapsulation (United States)

    Al Balushi, Zakaria Y.; Wang, Ke; Ghosh, Ram Krishna; Vilá, Rafael A.; Eichfeld, Sarah M.; Caldwell, Joshua D.; Qin, Xiaoye; Lin, Yu-Chuan; Desario, Paul A.; Stone, Greg; Subramanian, Shruti; Paul, Dennis F.; Wallace, Robert M.; Datta, Suman; Redwing, Joan M.; Robinson, Joshua A.


    The spectrum of two-dimensional (2D) and layered materials `beyond graphene’ offers a remarkable platform to study new phenomena in condensed matter physics. Among these materials, layered hexagonal boron nitride (hBN), with its wide bandgap energy (~5.0-6.0 eV), has clearly established that 2D nitrides are key to advancing 2D devices. A gap, however, remains between the theoretical prediction of 2D nitrides `beyond hBN’ and experimental realization of such structures. Here we demonstrate the synthesis of 2D gallium nitride (GaN) via a migration-enhanced encapsulated growth (MEEG) technique utilizing epitaxial graphene. We theoretically predict and experimentally validate that the atomic structure of 2D GaN grown via MEEG is notably different from reported theory. Moreover, we establish that graphene plays a critical role in stabilizing the direct-bandgap (nearly 5.0 eV), 2D buckled structure. Our results provide a foundation for discovery and stabilization of 2D nitrides that are difficult to prepare via traditional synthesis.

  1. Alumimun nitride piezoelectric NEMS resonators and switches (United States)

    Piazza, G.


    A major challenge associated with the demonstration of high frequency and fast NanoElectroMechanical Systems (NEMS) components is the ability to efficiently transduce the nanomechanical device. This work presents noteworthy opportunities associated with the scaling of piezoelectric aluminum nitride (AlN) films from the micro to the nano realm and their application to the making of efficient NEMS resonators and switches that can be directly interfaced with conventional electronics. Experimental data showing NEMS AlN resonators (250 nm thick with lateral features as small as 300 nm) vibrating at record-high frequencies approaching 10 GHz with Qs close to 500 are presented. These NEMS resonators could be employed as sensors to tag analyte concentrations that reach the part per trillion levels or for frequency synthesis and filtering in ultra-compact microwave transceivers. 100 nm thick AlN films have been used to fabricate NEMS actuators for mechanical computing applications. Experimental data confirming that bimorph nanopiezo- actuators have the same piezoelectric properties of microscale counterparts and can be adopted for the implementation of mechanical logic elements are presented.

  2. Fully CMOS-compatible titanium nitride nanoantennas (United States)

    Briggs, Justin A.; Naik, Gururaj V.; Petach, Trevor A.; Baum, Brian K.; Goldhaber-Gordon, David; Dionne, Jennifer A.


    CMOS-compatible fabrication of plasmonic materials and devices will accelerate the development of integrated nanophotonics for information processing applications. Using low-temperature plasma-enhanced atomic layer deposition (PEALD), we develop a recipe for fully CMOS-compatible titanium nitride (TiN) that is plasmonic in the visible and near infrared. Films are grown on silicon, silicon dioxide, and epitaxially on magnesium oxide substrates. By optimizing the plasma exposure per growth cycle during PEALD, carbon and oxygen contamination are reduced, lowering undesirable loss. We use electron beam lithography to pattern TiN nanopillars with varying diameters on silicon in large-area arrays. In the first reported single-particle measurements on plasmonic TiN, we demonstrate size-tunable darkfield scattering spectroscopy in the visible and near infrared regimes. The optical properties of this CMOS-compatible material, combined with its high melting temperature and mechanical durability, comprise a step towards fully CMOS-integrated nanophotonic information processing.

  3. Preparation of graphitic carbon nitride by electrodeposition

    Institute of Scientific and Technical Information of China (English)

    LI Chao; CAO Chuanbao; ZHU Hesun


    The CNx thin film was deposited on Si(100) substrate from a saturated acetone solution of cyanuric trichloride and melamine (cyanuric trichloride/melamine=1︰1.5) at room temperature. X-ray diffraction (XRD) results showed that the diffraction peaks in the pattern coincided well with those of graphite-like carbon nitride calculated in the literature. The lattice constants (a=4.79 A, c=6.90 A) for g-C3N4 matched with those of ab initio calculations (a=4.74 A, c=6.72 A) quite well. X-ray photoelectron spectroscopy (XPS) measurements indicated that the elements in the deposited films were mostly of C and N (N/C=0.75), and N (400.00 eV) bonded with C (287.72 eV) in the form of six-member C3N3 ring. The peaks at 800 cm-1, 1310 cm-1 and 1610 cm-1 in the Fourier transform infrared (FTIR) spectrum indicated that triazine ring existed in the product. These results demonstrated that crystalline g-C3N4 was obtained in the CNx film.

  4. Ceramic processing of boron nitride insulators

    Energy Technology Data Exchange (ETDEWEB)

    Morgan, C. S.; McCulloch, R. W.


    Fuel pin simulators (FPS) are the prime elements of several test facilities at the Oak Ridge National Laboratory (ORNL). These experimental facilities are used to conduct out-of-reactor thermal-hydraulic and mechanical interaction safety tests for both light-water and breeder reactor programs. The FPS units simulate the geometry, heat flux profiles, and operational capabilities of a reactor core element under steady-state and transient conditions. They are subjected to temperatures as high as 1600/sup 0/C (2900/sup 0/F) and power levels as high as 57.5 kW/m (17.5 kW/ft) as well as severe thermal stresses during transient tests. The insulating material in the narrow annulus between the heating coil and the FPS sheath is subjected to very rigorous conditions. Accuracy of the reactor safety test information and validity of the test data depend on the heat flux uniformity under all test conditions and on the reliable operation of all fuel pin simulators and their internal thermocouples. Boron nitride (BN), because of its high degree of chemical inertness combined with its relatively unique properties of high thermal conductivity and low electrical conductivity, is the most suitable insulating material for FPS. The important BN properties, thermal conductivity and electrical resistance, are strongly influenced by crystallite orientation and by impurities. The article describes new BN powder processing techniques, which optimize these properties.

  5. Polymeric photocatalysts based on graphitic carbon nitride. (United States)

    Cao, Shaowen; Low, Jingxiang; Yu, Jiaguo; Jaroniec, Mietek


    Semiconductor-based photocatalysis is considered to be an attractive way for solving the worldwide energy shortage and environmental pollution issues. Since the pioneering work in 2009 on graphitic carbon nitride (g-C3N4) for visible-light photocatalytic water splitting, g-C3N4 -based photocatalysis has become a very hot research topic. This review summarizes the recent progress regarding the design and preparation of g-C3N4 -based photocatalysts, including the fabrication and nanostructure design of pristine g-C3N4 , bandgap engineering through atomic-level doping and molecular-level modification, and the preparation of g-C3N4 -based semiconductor composites. Also, the photo-catalytic applications of g-C3N4 -based photocatalysts in the fields of water splitting, CO2 reduction, pollutant degradation, organic syntheses, and bacterial disinfection are reviewed, with emphasis on photocatalysis promoted by carbon materials, non-noble-metal cocatalysts, and Z-scheme heterojunctions. Finally, the concluding remarks are presented and some perspectives regarding the future development of g-C3N4 -based photocatalysts are highlighted.

  6. Hexagonal boron-nitride nanomesh magnets (United States)

    Ohata, C.; Tagami, R.; Nakanishi, Y.; Iwaki, R.; Nomura, K.; Haruyama, J.


    The formation of magnetic and spintronic devices using two-dimensional (2D) atom-thin layers has attracted attention. Ferromagnetisms (FMs) arising from zigzag-type atomic structure of edges of 2D atom-thin materials have been experimentally observed in graphene nanoribbons, hydrogen (H)-terminated graphene nanomeshes (NMs), and few-layer oxygen (O)-terminated black phosphorus NMs. Herein, we report room-temperature edge FM in few-layer hexagonal boron-nitride (hBN) NMs. O-terminated hBNNMs annealed at 500 °C show the largest FM, while it completely disappears in H-terminated hBNNMs. When hBNNMs are annealed at other temperatures, amplitude of the FM significantly decreases. These are highly in contrast to the case of graphene NMs but similar to the cases of black phosphorus NM and suggest that the hybridization of the O atoms with B(N) dangling bonds of zigzag pore edges, formed at the 500 °C annealing, strongly contribute to this edge FM. Room-temperature FM realizable only by exposing hBNNMs into air opens the way for high-efficiency 2D flexible magnetic and spintronic devices without the use of rare magnetic elements.

  7. Hyperbolic phonon polaritons in hexagonal boron nitride (United States)

    Dai, Siyuan


    Uniaxial materials whose axial and tangential permittivities have opposite signs are referred to as indefinite or hyperbolic media. While hyperbolic responses are normally achieved with metamaterials, hexagonal boron nitride (hBN) naturally possesses this property due to the anisotropic phonons in the mid-infrared. Using scattering-type scanning near-field optical microscopy, we studied polaritonic phenomena in hBN. We performed infrared nano-imaging of highly confined and low-loss hyperbolic phonon polaritons in hBN. The polariton wavelength was shown to be governed by the hBN thickness according to a linear law persisting down to few atomic layers [Science, 343, 1125-1129 (2014)]. Additionally, we carried out the modification of hyperbolic response in heterostructures comprised of a mononlayer graphene deposited on hBN. Electrostatic gating of the top graphene layer allows for the modification of wavelength and intensity of hyperbolic phonon polaritons in bulk hBN. The physics of the modification originates from the plasmon-phonon coupling in the hyperbolic medium. Furthermore, we demonstrated the ``hyperlens'' for subdiffractional imaging and focusing using a slab of hBN.

  8. Fluorescent lighting with aluminum nitride phosphors

    Energy Technology Data Exchange (ETDEWEB)

    Cherepy, Nerine J.; Payne, Stephen A.; Seeley, Zachary M.; Srivastava, Alok M.


    A fluorescent lamp includes a glass envelope; at least two electrodes connected to the glass envelope; mercury vapor and an inert gas within the glass envelope; and a phosphor within the glass envelope, wherein the phosphor blend includes aluminum nitride. The phosphor may be a wurtzite (hexagonal) crystalline structure Al.sub.(1-x)M.sub.xN phosphor, where M may be drawn from beryllium, magnesium, calcium, strontium, barium, zinc, scandium, yttrium, lanthanum, cerium, praseodymium, europium, gadolinium, terbium, ytterbium, bismuth, manganese, silicon, germanium, tin, boron, or gallium is synthesized to include dopants to control its luminescence under ultraviolet excitation. The disclosed Al.sub.(1-x)M.sub.xN:Mn phosphor provides bright orange-red emission, comparable in efficiency and spectrum to that of the standard orange-red phosphor used in fluorescent lighting, Y.sub.2O.sub.3:Eu. Furthermore, it offers excellent lumen maintenance in a fluorescent lamp, and does not utilize "critical rare earths," minimizing sensitivity to fluctuating market prices for the rare earth elements.

  9. Nonlinear Refractory Plasmonics with Titanium Nitride Nanoantennas. (United States)

    Gui, Lili; Bagheri, Shahin; Strohfeldt, Nikolai; Hentschel, Mario; Zgrabik, Christine M; Metzger, Bernd; Linnenbank, Heiko; Hu, Evelyn L; Giessen, Harald


    Titanium nitride (TiN) is a novel refractory plasmonic material which can sustain high temperatures and exhibits large optical nonlinearities, potentially opening the door for high-power nonlinear plasmonic applications. We fabricate TiN nanoantenna arrays with plasmonic resonances tunable in the range of about 950-1050 nm by changing the antenna length. We present second-harmonic (SH) spectroscopy of TiN nanoantenna arrays, which is analyzed using a nonlinear oscillator model with a wavelength-dependent second-order response from the material itself. Furthermore, characterization of the robustness upon strong laser illumination confirms that the TiN antennas are able to endure laser irradiation with high peak intensity up to 15 GW/cm(2) without changing their optical properties and their physical appearance. They outperform gold antennas by one order of magnitude regarding laser power sustainability. Thus, TiN nanoantennas could serve as promising candidates for high-power/high-temperature applications such as coherent nonlinear converters and local heat sources on the nanoscale.

  10. Porous Boron Nitride with Tunable Pore Size. (United States)

    Dai, Jun; Wu, Xiaojun; Yang, Jinlong; Zeng, Xiao Cheng


    On the basis of a global structural search and first-principles calculations, we predict two types of porous boron-nitride (BN) networks that can be built up with zigzag BN nanoribbons (BNNRs). The BNNRs are either directly connected with puckered B (N) atoms at the edge (type I) or connected with sp(3)-bonded BN chains (type II). Besides mechanical stability, these materials are predicted to be thermally stable at 1000 K. The porous BN materials entail large surface areas, ranging from 2800 to 4800 m(2)/g. In particular, type-II BN material with relatively large pores is highly favorable for hydrogen storage because the computed hydrogen adsorption energy (-0.18 eV) is very close to the optimal adsorption energy (-0.15 eV) suggested for reversible hydrogen storage at room temperature. Moreover, the type-II materials are semiconductors with width-dependent direct bandgaps, rendering the type-II BN materials promising not only for hydrogen storage but also for optoelectronic and photonic applications.

  11. Boron Nitride Nanostructures: Fabrication, Functionalization and Applications. (United States)

    Yin, Jun; Li, Jidong; Hang, Yang; Yu, Jin; Tai, Guoan; Li, Xuemei; Zhang, Zhuhua; Guo, Wanlin


    Boron nitride (BN) structures are featured by their excellent thermal and chemical stability and unique electronic and optical properties. However, the lack of controlled synthesis of quality samples and the electrically insulating property largely prevent realizing the full potential of BN nanostructures. A comprehensive overview of the current status of the synthesis of two-dimensional hexagonal BN sheets, three dimensional porous hexagonal BN materials and BN-involved heterostructures is provided, highlighting the advantages of different synthetic methods. In addition, structural characterization, functionalizations and prospective applications of hexagonal BN sheets are intensively discussed. One-dimensional BN nanoribbons and nanotubes are then discussed in terms of structure, fabrication and functionality. In particular, the existing routes in pursuit of tunable electronic and magnetic properties in various BN structures are surveyed, calling upon synergetic experimental and theoretical efforts to address the challenges for pioneering the applications of BN into functional devices. Finally, the progress in BN superstructures and novel B/N nanostructures is also briefly introduced.

  12. Nanoscale optical properties of indium gallium nitride/gallium nitride nanodisk-in-rod heterostructures. (United States)

    Zhou, Xiang; Lu, Ming-Yen; Lu, Yu-Jung; Jones, Eric J; Gwo, Shangjr; Gradečak, Silvija


    III-nitride based nanorods and nanowires offer great potential for optoelectronic applications such as light emitting diodes or nanolasers. We report nanoscale optical studies of InGaN/GaN nanodisk-in-rod heterostructures to quantify uniformity of light emission on the ensemble level, as well as the emission characteristics from individual InGaN nanodisks. Despite the high overall luminescence efficiency, spectral and intensity inhomogeneities were observed and directly correlated to the compositional variations among nanodisks and to the presence of structural defect, respectively. Observed light quenching is correlated to type I1 stacking faults in InGaN nanodisks, and the mechanisms for stacking fault induced nonradiative recombinations are discussed in the context of band structure around stacking faults and Fermi level pinning at nanorod surfaces. Our results highlight the importance of controlling III-nitride nanostructure growths to further reduce defect formation and ensure compositional homogeneity for optoelectronic devices with high efficiencies and desirable spectrum response.

  13. High quality single atomic layer deposition of hexagonal boron nitride on single crystalline Rh(111) four-inch wafers

    Energy Technology Data Exchange (ETDEWEB)

    Hemmi, A.; Bernard, C.; Cun, H.; Roth, S.; Klöckner, M.; Kälin, T.; Osterwalder, J.; Greber, T., E-mail: [Physik-Institut, Universität Zürich, CH-8057 Zürich (Switzerland); Weinl, M.; Gsell, S.; Schreck, M. [Institut für Physik, Universität Augsburg, D-86135 Augsburg (Germany)


    The setup of an apparatus for chemical vapor deposition (CVD) of hexagonal boron nitride (h-BN) and its characterization on four-inch wafers in ultra high vacuum (UHV) environment is reported. It provides well-controlled preparation conditions, such as oxygen and argon plasma assisted cleaning and high temperature annealing. In situ characterization of a wafer is accomplished with target current spectroscopy. A piezo motor driven x-y stage allows measurements with a step size of 1 nm on the complete wafer. To benchmark the system performance, we investigated the growth of single layer h-BN on epitaxial Rh(111) thin films. A thorough analysis of the wafer was performed after cutting in atmosphere by low energy electron diffraction, scanning tunneling microscopy, and ultraviolet and X-ray photoelectron spectroscopies. The apparatus is located in a clean room environment and delivers high quality single layers of h-BN and thus grants access to large area UHV processed surfaces, which had been hitherto restricted to expensive, small area single crystal substrates. The facility is versatile enough for customization to other UHV-CVD processes, e.g., graphene on four-inch wafers.

  14. Carbothermic synthesis of 820 μm uranium nitride kernels: Literature review, thermodynamics, analysis, and related experiments

    Energy Technology Data Exchange (ETDEWEB)

    Lindemer, T.B. [Harbach Engineering and Solutions, Dayton, OH 45458 (United States); Voit, S.L.; Silva, C.M.; Besmann, T.M. [Oak Ridge National Laboratory, P.O. Box 2008, Oak Ridge, TN 37831-6223 (United States); Hunt, R.D., E-mail: [Oak Ridge National Laboratory, P.O. Box 2008, Oak Ridge, TN 37831-6223 (United States)


    The US Department of Energy is developing a new nuclear fuel that would be less susceptible to ruptures during a loss-of-coolant accident. The fuel would consist of tristructural isotropic coated particles with uranium nitride (UN) kernels with diameters near 825 μm. This effort explores factors involved in the conversion of uranium oxide–carbon microspheres into UN kernels. An analysis of previous studies with sufficient experimental details is provided. Thermodynamic calculations were made to predict pressures of carbon monoxide and other relevant gases for several reactions that can be involved in the conversion of uranium oxides and carbides into UN. Uranium oxide–carbon microspheres were heated in a microbalance with an attached mass spectrometer to determine details of calcining and carbothermic conversion in argon, nitrogen, and vacuum. A model was derived from experiments on the vacuum conversion to uranium oxide–carbide kernels. UN-containing kernels were fabricated using this vacuum conversion as part of the overall process. Carbonitride kernels of ∼89% of theoretical density were produced along with several observations concerning the different stages of the process.

  15. Fast-imaging and spectroscopic analysis of atmospheric argon streamers for large gap arc breakdown (United States)

    Pachuilo, Michael; Stefani, Francis; Bengtson, Roger; Raja, Laxminarayan


    A non-equilibrium plasma source has been developed to assist in the low-voltage arc breakdown of large electrode gaps. The source consists of a dielectric embedded wire helically wound around a confining cylindrical quartz chamber. Annular electrodes cap the ends of the quartz chamber. An argon feed gas is used to provide a uniform environment and exhausts to ambient atmospheric conditions. A negative polarity 50 kV trigger pulse is applied to the embedded trigger wire to initiate the arc breakdown. Application of the trigger pulse produces a localized coronal discharges along the inner surface of the quartz tube. The corona provides seed electrons through which streamers propagate from one of the main discharge electrode along the quartz surface until it reaches the opposite electrode to bridge the gap. Once the gap is bridged a spark over occurs and robust arc discharge is formed in the chamber volume. Fast imaging of the streamer propagation establishes its velocity in the range of ~ 100 km/s. Spectroscopy of the streamer discharge in atmospheric argon has been conducted and electron temperature and number density estimated from a collision radiative model. Argon spectrum is dominated by neutral argon lines in the 650--950 nm range, and singly ionized argon lines are observed in the ultra-violet to near UV (300--400 nm). Research was performed in connection with AFOSR Contract FA9550-11-1-0062.

  16. Argon laser versus erbium:YAG laser in the treatment of xanthelasma palpebrarum (United States)

    Abdelkader, Mona; Alashry, Shereen Ezzelregal


    Background Xanthelasma palpebrarum is the most common of the xanthomas with asymptomatic, symmetrical, bilateral, soft, yellow, polygonal papules around the eyelids. Though it is a benign lesion causing no functional disturbance, it is esthetically annoying. The surgical laser offers an extremely elegant and powerful solution to this problem. Objective To evaluate the effectiveness of erbium:YAG and argon lasers in the treatment of xanthelasma lesions. Patients and methods Forty patients were included in the study. Twenty patients (15 patients were bilateral with 30 eyes either in the upper or lower lid and 5 patients were unilateral) were treated with erbium:YAG laser. Another 20 patients (10 patients were bilateral with 20 eyes and 10 patients were unilateral) were treated with argon laser. Results In the majority of treated patients (either treated with erbium:YAG or argon laser), xanthelasma lesions were completely disappeared or significantly decreased in size. Two patients showed pigmentary changes in the form of hypopigmentation with erbium:YAG laser (one case), another case showed hyperpigmentation. No intraoperative complication was observed. No significant scar or recurrence was observed. Conclusion Argon laser in xanthelasma is an easy, effective, and safe method of treatment for small lesions and YAG laser is more better for large lesions than argon laser. PMID:25892929

  17. Effects of oxygen concentration on atmospheric pressure dielectric barrier discharge in Argon-Oxygen Mixture (United States)

    Li, Xuechun; Li, Dian; Wang, Younian


    A dielectric barrier discharge (DBD) can generate a low-temperature plasma easily at atmospheric pressure and has been investigated for applications in trials in cancer therapy, sterilization, air pollution control, etc. It has been confirmed that reactive oxygen species (ROS) play a key role in the processes. In this work, we use a fluid model to simulate the plasma characteristics for DBD in argon-oxygen mixture. The effects of oxygen concentration on the plasma characteristics have been discussed. The evolution mechanism of ROS has been systematically analyzed. It was found that the ground state oxygen atoms and oxygen molecular ions are the dominated oxygen species under the considered oxygen concentrations. With the oxygen concentration increasing, the densities of electrons, argon atomic ions, resonance state argon atoms, metastable state argon atoms and excited state argon atoms all show a trend of decline. The oxygen molecular ions density is high and little influenced by the oxygen concentration. Ground state oxygen atoms density tends to increase before falling. The ozone density increases significantly. Increasing the oxygen concentration, the discharge mode begins to change gradually from the glow discharge mode to Townsend discharge mode. Project supported by the National Natural Science Foundation of China (Grant No. 11175034).

  18. Measurement of the attenuation length of argon scintillation light in the ArDM LAr TPC

    CERN Document Server

    Calvo, J; Crivelli, P; Daniel, M; DiLuise, S; Gendotti, A; Horikawa, S; Molina-Bueno, L; Montes, B; Mu, W; Murphy, S; Natterer, G; Ngyuen, K; Periale, L; Quan, Y; Radics, B; Regenfus, C; Romero, L; Rubbia, A; Santorelli, R; Sergiampietri, F; Viant, T; Wu, S


    We report on a measurement of the attenuation length for the scintillation light in the tonne size liquid argon target of the ArDM dark matter experiment. The data was recorded in the first underground operation of the experiment in single-phase operational mode. The results were achieved by comparing the light yield spectra from 39-Ar and 83m-Kr to a description of the ArDM setup with a model of full light ray tracing. A relatively low value close to 0.5 m was found for the attenuation length of the liquid argon bulk to its own scintillation light. We interpret this result as a presence of optically active impurities in the liquid argon which are not filtered by the installed purification systems. We also present analyses of the argon gas employed for the filling and discuss cross sections in the vacuum ultraviolet of various molecules in respect to purity requirements in the context of large liquid argon installations.

  19. Study of an Atmospheric Pressure Plasma Jet of Argon Generated by Column Dielectric Barrier Discharge (United States)

    Nur, M.; Kinandana, A. W.; Winarto, P.; Muhlisin, Z.; Nasrudin


    An atmospheric of argon plasma jet was generated by using column dielectric barrier discharge has been investigated. In this study, argon gas was passed through the capillary column by regulating the flow rate of gas. This atmospheric pressure plasma jet (APPJ) was generated by a sinusoidal AC high voltage in the range of 0.4 kV to 10 kV and at frequencies of 15 kHz and 26 kHz. APPJ has been produced with flow rate of argon gas from 1 litter/min - 10 litters/min. The electric current has been taken with variation of voltage and each interval argon gas flow rate of 1 litter/min. The results show that electric current increase linearly and then it trends to saturation condition by the increasing of applied voltage. We found also that the length of the plasma jet increase by augmenting of applied voltage both for frequencies of 15 kHz and 26 kHz. Furthermore, our results show that length of plasma jet optimum for flow rate of argon gas of 2 litters/minute. In addition, we obtained that the larger applied voltage, the greater the temperature of the plasma jet.

  20. Prediction of the thermophysical properties of pure neon, pure argon, and the binary mixtures neon-argon and argon-krypton by Monte Carlo simulation using ab initio potentials. (United States)

    Nasrabad, A E; Laghaei, R; Deiters, U K


    Gibbs ensemble Monte Carlo simulations were used to test the ability of intermolecular pair potentials derived ab initio from quantum mechanical principles, enhanced by Axilrod-Teller triple-dipole interactions, to predict the vapor-liquid phase equilibria of pure neon, pure argon, and the binary mixtures neon-argon and argon-krypton. The interaction potentials for Ne-Ne, Ar-Ar, Kr-Kr, and Ne-Ar were taken from literature; for Ar-Kr a different potential has been developed. In all cases the quantum mechanical calculations had been carried out with the coupled-cluster approach [CCSD(T) level of theory] and with correlation consistent basis sets; furthermore an extrapolation scheme had been applied to obtain the basis set limit of the interaction energies. The ab initio pair potentials as well as the thermodynamic data based on them are found to be in excellent agreement with experimental data; the only exception is neon. It is shown, however, that in this case the deviations can be quantitatively explained by quantum effects. The interaction potentials that have been developed permit quantitative predictions of high-pressure phase equilibria of noble-gas mixtures.

  1. Elastic properties of indium nitrides grown on sapphire substrates determined by nano-indentation: In comparison with other nitrides

    Directory of Open Access Journals (Sweden)

    Ichiro Yonenaga


    Full Text Available The hardness of wurtzite indium nitride (α-InN films of 0.5 to 4 μm in thickness was measured by the nano-indentation method at room temperature. After investigation of crystalline quality by x-ray diffraction, the hardness and Young’s modulus were determined to be 8.8 ± 0.4 and 184 ± 5 GPa, respectively, for the In (0001- and N ( 000 1 ̄ -growth faces of InN films. The bulk and shear moduli were then derived to be 99 ± 3 and 77 ± 2 GPa, respectively. The Poisson’s ratio was evaluated to be 0.17 ± 0.03. The results were examined comprehensively in comparison with previously reported data of InN as well as those of other nitrides of aluminum nitride and gallium nitride. The underlying physical process determining the moduli and hardness was examined in terms of atomic bonding and dislocation energy of the nitrides and wurtzite zinc oxide.

  2. Electronic Biosensors Based on III-Nitride Semiconductors. (United States)

    Kirste, Ronny; Rohrbaugh, Nathaniel; Bryan, Isaac; Bryan, Zachary; Collazo, Ramon; Ivanisevic, Albena


    We review recent advances of AlGaN/GaN high-electron-mobility transistor (HEMT)-based electronic biosensors. We discuss properties and fabrication of III-nitride-based biosensors. Because of their superior biocompatibility and aqueous stability, GaN-based devices are ready to be implemented as next-generation biosensors. We review surface properties, cleaning, and passivation as well as different pathways toward functionalization, and critically analyze III-nitride-based biosensors demonstrated in the literature, including those detecting DNA, bacteria, cancer antibodies, and toxins. We also discuss the high potential of these biosensors for monitoring living cardiac, fibroblast, and nerve cells. Finally, we report on current developments of covalent chemical functionalization of III-nitride devices. Our review concludes with a short outlook on future challenges and projected implementation directions of GaN-based HEMT biosensors.

  3. Low-Temperature Nitriding by Means of SMAT

    Institute of Scientific and Technical Information of China (English)

    W.P. Tong; H.W. Zhang; N.R. Tao; Z.B. Wang; J. Lu; K. Lu


    The microstructure in the surface layer of iron and steel samples can be refined at the nanometer scale by means of a surface mechanical attrition treatment (SMAT) that generates repetitive severe plastic deformation to the surface layer.The subsequent nitriding kinetics of the as-treated samples with the nanostructured surface layer is greatly enhanced so that the nitriding temperatures can be reduce to 300 ~ 400 ℃ regions. This enhanced processing method demonstrates both the technological significance of nanomaterials in advancing the traditional processing techniques, and provides a new approach for selective surface reactions in solids. This article reviews the present state of the art in this field. The microstructure and properties of SMAT samples nitrided will be summarized. Further considerations of the development and applications of this new technique will also be presented.

  4. Experimental core electron density of cubic boron nitride

    DEFF Research Database (Denmark)

    Wahlberg, Nanna; Bindzus, Niels; Bjerg, Lasse;

    Experimental core electron density of cubic boron nitride Nanna Wahlberg*, Niels Bindzus*, Lasse Bjerg*, Jacob Becker*, and Bo B. Iversen* *Aarhus University, Department of Chemistry, CMC, Langelandsgade 140, 8000 Århus, Denmark The resent progress in powder diffraction provides data of quality...... beyond multipolar modeling of the valence density. As was recently shown in a benchmark study of diamond by Bindzus et al.1 The next step is to investigate more complicated chemical bonding motives, to determine the effect of bonding on the core density. Cubic boron nitride2 lends itself as a perfect...... candidate because of its many similarities with diamond: bonding pattern in the extended network structure, hardness, and the quality of the crystallites.3 However, some degree ionic interaction is a part of the bonding in boron nitride, which is not present in diamond. By investigating the core density...

  5. Thermally grown thin nitride films as a gate dielectric

    CERN Document Server

    Shin, H C; Hwang, T K; Lee, K R


    High-quality very thin films ( <=6 nm) of silicon nitride were thermally grown in ammonia atmosphere with an IR (Infrared) gold image furnace. As-grown nitride film was analyzed using AES(Auger Emission Spectroscopy). Using MIS (Metal-Insulator-Semiconductor) devices, the growth rate was calculated using CV (Capacitance-Voltage) measurements and various electrical characteristics were obtained using CV, IV (Current-Voltage), trapping, time-dependent breakdown, high-field stress, constant current injection stress and dielectric breakdown techniques. These characteristics showed that very thin thermal silicon nitride films can be used as gate dielectrics for future highly scaled-down ULSI (Ultra Large Scale Integrated) devices, especially for EEPROM (Electrically Erasable and Programmable ROM)'s.

  6. Transition Metal Nitrides for Electrocatalytic Energy Conversion: Opportunities and Challenges. (United States)

    Xie, Junfeng; Xie, Yi


    Electrocatalytic energy conversion has been considered as one of the most efficient and promising pathways for realizing energy storage and energy utilization in modern society. To improve electrocatalytic reactions, specific catalysts are needed to lower the overpotential. In the search for efficient alternatives to noble metal catalysts, transition metal nitrides have attracted considerable interest due to their high catalytic activity and unique electronic structure. Over the past few decades, numerous nitride-based catalysts have been explored with respect to their ability to drive various electrocatalytic reactions, such as the hydrogen evolution reaction and the oxygen evolution reaction to achieve water splitting and the oxygen reduction reaction coupled with the methanol oxidation reaction to construct fuel cells or rechargeable Li-O2 batteries. This Minireview provides a brief overview of recent progress on electrocatalysts based on transition metal nitrides, and outlines the current challenges and future opportunities.

  7. Nanoparticle plasmonics: going practical with transition metal nitrides

    Directory of Open Access Journals (Sweden)

    Urcan Guler


    Full Text Available Promising designs and experimental realizations of devices with unusual properties in the field of plasmonics have attracted a great deal of attention over the past few decades. However, the high expectations for realized technology products have not been met so far. The main complication is the absence of robust, high performance, low cost plasmonic materials that can be easily integrated into already established technologies such as microelectronics. This review provides a brief discussion on alternative plasmonic materials for localized surface plasmon applications and focuses on transition metal nitrides, in particular, titanium nitride, which has recently been shown to be a high performance refractory plasmonic material that could replace and even outperform gold in various plasmonic devices. As a material compatible with biological environments and the semiconductor industry, titanium nitride possesses superior properties compared to noble metals such as high temperature durability, chemical stability, corrosion resistance, low cost and mechanical hardness.

  8. Active Control of Nitride Plasmonic Dispersion in the Far Infrared.

    Energy Technology Data Exchange (ETDEWEB)

    Shaner, Eric A.; Dyer, Gregory Conrad; Seng, William Francis; Bethke, Donald Thomas; Grine, Albert Dario,; Baca, Albert G.; Allerman, Andrew A.


    We investigate plasmonic structures in nitride-based materials for far-infrared (IR) applications. The two dimensional electron gas (2DEG) in the GaN/AlGaN material system, much like metal- dielectric structures, is a patternable plasmonic medium. However, it also permits for direct tunability via an applied voltage. While there have been proof-of-principle demonstrations of plasma excitations in nitride 2DEGs, exploration of the potential of this material system has thus far been limited. We recently demonstrated coherent phenomena such as the formation of plasmonic crystals, strong coupling of tunable crystal defects to a plasmonic crystal, and electromagnetically induced transparency in GaAs/AlGaAs 2DEGs at sub-THz frequencies. In this project, we explore whether these effects can be realized in nitride 2DEG materials above 1 THz and at temperatures exceeding 77 K.

  9. Synthesis of reduced carbon nitride at the reduction by hydroquinone of water-soluble carbon nitride oxide (g-C3N4)O (United States)

    Kharlamov, Alexey; Bondarenko, Marina; Kharlamova, Ganna; Fomenko, Veniamin


    For the first time at the reduction by hydroquinone of water-soluble carbon nitride oxide (g-C3N4)O reduced carbon nitride (or reduced multi-layer azagraphene) is obtained. It is differed from usually synthesized carbon nitride by a significantly large (on 0.09 nm) interplanar distance is. At the same time, the chemical bonds between atoms in a heteroatomic plane of reduced carbon nitride correspond to the bonds in a synthesized g-C3N4. The samples of water-soluble carbon nitride oxide were synthesized under the special reactionary conditions of a pyrolysis of melamine and urea. We believe that reduced carbon nitride consists of weakly connected carbon-nitrogen monosheets (azagraphene sheets) as well as reduced (from graphene oxide) graphene contains weakly connected graphene sheets.

  10. Effect of Plasma Nitriding Parameters on the Wear Resistance of Alloy Inconel 718 (United States)

    Kovací, Halim; Ghahramanzadeh ASL, Hojjat; Albayrak, Çigdem; Alsaran, Akgün; Çelik, Ayhan


    The effect of the temperature and duration of plasma nitriding on the microstructure and friction and wear parameters of Inconel 718 nickel alloy is investigated. The process of plasma nitriding is conducted in a nitrogen-hydrogen gaseous mixture at a temperature of 400, 500 and 600°C for 1 and 4 h. The modulus of elasticity of the nitrided layer, the micro- and nanohardness, the surface roughness, the friction factor and the wear resistance of the alloy are determined prior to and after the nitriding. The optimum nitriding regime providing the best tribological characteristics is determined.

  11. Compressive creep of silicon nitride with additives; Fluencia por compressao de nitreto de silicio aditivado

    Energy Technology Data Exchange (ETDEWEB)

    Shibuya, Newton Hissao; Cavalcanti, Celso Berilo Cidade; Piorino Neto, Francisco; Silva, Vitor Alexandre da; Silva, Cosme Roberto Moreira da [Centro Tecnico Aeroespacial (CTA), Sao Jose dos Campos, SP (Brazil). Inst. de Aeronautica e Espaco


    Manufacturing of engine and turbine components made of silicon nitride based ceramics requires knowledge of thermochemical properties such as resistance to compressive creep. In order to characterize this property a compressive creep apparatus was assembled at AMR/IAE/CTA, able to work at 1450 deg C in a continuous mode. Test pieces were prepared from mixtures of silicon nitride with rare earth carbonate and aluminium nitride. These test pieces were pressureless sintered at 1750 deg C for 30 minutes under nitrogen atmosphere. Experiments showed that rare earth carbonate and aluminium nitride are suitable additives for silicon nitride. (author) 1 fig., 2 tabs.

  12. Lateral electrochemical etching of III-nitride materials for microfabrication

    Energy Technology Data Exchange (ETDEWEB)

    Han, Jung


    Conductivity-selective lateral etching of III-nitride materials is described. Methods and structures for making vertical cavity surface emitting lasers with distributed Bragg reflectors via electrochemical etching are described. Layer-selective, lateral electrochemical etching of multi-layer stacks is employed to form semiconductor/air DBR structures adjacent active multiple quantum well regions of the lasers. The electrochemical etching techniques are suitable for high-volume production of lasers and other III-nitride devices, such as lasers, HEMT transistors, power transistors, MEMs structures, and LEDs.

  13. Inter-layer potential for hexagonal boron nitride (United States)

    Leven, Itai; Azuri, Ido; Kronik, Leeor; Hod, Oded


    A new interlayer force-field for layered hexagonal boron nitride (h-BN) based structures is presented. The force-field contains three terms representing the interlayer attraction due to dispersive interactions, repulsion due to anisotropic overlaps of electron clouds, and monopolar electrostatic interactions. With appropriate parameterization, the potential is able to simultaneously capture well the binding and lateral sliding energies of planar h-BN based dimer systems as well as the interlayer telescoping and rotation of double walled boron-nitride nanotubes of different crystallographic orientations. The new potential thus allows for the accurate and efficient modeling and simulation of large-scale h-BN based layered structures.

  14. Communication: Water on hexagonal boron nitride from diffusion Monte Carlo

    Energy Technology Data Exchange (ETDEWEB)

    Al-Hamdani, Yasmine S.; Ma, Ming; Michaelides, Angelos, E-mail: [Thomas Young Centre and London Centre for Nanotechnology, 17–19 Gordon Street, London WC1H 0AH (United Kingdom); Department of Chemistry, University College London, 20 Gordon Street, London WC1H 0AJ (United Kingdom); Alfè, Dario [Thomas Young Centre and London Centre for Nanotechnology, 17–19 Gordon Street, London WC1H 0AH (United Kingdom); Department of Earth Sciences, University College London, Gower Street, London WC1E 6BT (United Kingdom); Lilienfeld, O. Anatole von [Institute of Physical Chemistry and National Center for Computational Design and Discovery of Novel Materials, Department of Chemistry, University of Basel, Klingelbergstrasse 80, CH-4056 Basel (Switzerland); Argonne Leadership Computing Facility, Argonne National Laboratories, 9700 S. Cass Avenue Argonne, Lemont, Illinois 60439 (United States)


    Despite a recent flurry of experimental and simulation studies, an accurate estimate of the interaction strength of water molecules with hexagonal boron nitride is lacking. Here, we report quantum Monte Carlo results for the adsorption of a water monomer on a periodic hexagonal boron nitride sheet, which yield a water monomer interaction energy of −84 ± 5 meV. We use the results to evaluate the performance of several widely used density functional theory (DFT) exchange correlation functionals and find that they all deviate substantially. Differences in interaction energies between different adsorption sites are however better reproduced by DFT.


    Energy Technology Data Exchange (ETDEWEB)

    Bartlett, Neil; Biagioni, R.N.; McQuillan, B.W.; Robertson, A.S.; Thompson, A.C


    Graphite is oxidized by O{sub 2}{sup +} AsF{sub 6}{sup -} and by OsF{sub 6} to give first-stage graphite salts C{sub 8}{sup +} MF{sub 6}{sup -} and S{sub 2}O{sub 6}F{sub 2} oxidizes both graphite and boron nitride to yield the salts C{sub 12}{sup +} SO{sub 3}F{sup -} and (BN){sub 4}{sup +} SO{sub 3}F{sup -}, the latter being the first example of a first-stage boron nitride salt.

  16. Structure, Mechanics and Synthesis of Nanoscale Carbon and Boron Nitride (United States)

    Rinaldo, Steven G.

    This thesis is divided into two parts. In Part I, we examine the properties of thin sheets of carbon and boron nitride. We begin with an introduction to the theory of elastic sheets, where the stretching and bending modes are considered in detail. The coupling between stretching and bending modes is thought to play a crucial role in the thermodynamic stability of atomically-thin 2D sheets such as graphene. In Chapter 2, we begin by looking at the fabrication of suspended, atomically thin sheets of graphene. We then study their mechanical resonances which are read via an optical transduction technique. The frequency of the resonators was found to depend on their temperature, as was their quality factor. We conclude by offering some interpretations of the data in terms of the stretching and bending modes of graphene. In Chapter 3, we look briefly at the fabrication of thin sheets of carbon and boron nitride nanotubes. We examine the structure of the sheets using transmission and scanning electron microscopy (TEM and SEM, respectively). We then show a technique by which one can make sheets suspended over a trench with adjustable supports. Finally, DC measurements of the resistivity of the sheets in the temperature range 600 -- 1400 C are presented. In Chapter 4, we study the folding of few-layer graphene oxide, graphene and boron nitride into 3D aerogel monoliths. The properties of graphene oxide are first considered, after which the structure of graphene and boron nitride aerogels is examined using TEM and SEM. Some models for their structure are proposed. In Part II, we look at synthesis techniques for boron nitride (BN). In Chapter 5, we study the conversion of carbon structures of boron nitride via the application of carbothermal reduction of boron oxide followed by nitridation. We apply the conversion to a wide variety of morphologies, including aerogels, carbon fibers and nanotubes, and highly oriented pyrolytic graphite. In the latter chapters, we look at the

  17. Colloidal Plasmonic Titanium Nitride Nanoparticles: Properties and Applications

    Directory of Open Access Journals (Sweden)

    Guler Urcan


    Full Text Available Optical properties of colloidal plasmonic titanium nitride nanoparticles are examined with an eye on their photothermal and photocatalytic applications via transmission electron microscopy and optical transmittance measurements. Single crystal titanium nitride cubic nanoparticles with an average size of 50 nm, which was found to be the optimum size for cellular uptake with gold nanoparticles [1], exhibit plasmon resonance in the biological transparency window and demonstrate a high absorption efficiency. A self-passivating native oxide at the surface of the nanoparticles provides an additional degree of freedom for surface functionalization. The titanium oxide shell surrounding the plasmonic core can create new opportunities for photocatalytic applications.

  18. Synthesis and Optimization of the Sintering Kinetics of Actinide Nitrides

    Energy Technology Data Exchange (ETDEWEB)

    Drryl P. Butt; Brian Jaques


    Research conducted for this NERI project has advanced the understanding and feasibility of nitride nuclear fuel processing. In order to perform this research, necessary laboratory infrastructure was developed; including basic facilities and experimental equipment. Notable accomplishments from this project include: the synthesis of uranium, dysprosium, and cerium nitrides using a novel, low-cost mechanical method at room temperature; the synthesis of phase pure UN, DyN, and CeN using thermal methods; and the sintering of UN and (Ux, Dy1-x)N (0.7 ≤ X ≤ 1) pellets from phase pure powder that was synthesized in the Advanced Materials Laboratory at Boise State University.

  19. Neutron detection using boron gallium nitride semiconductor material


    Katsuhiro Atsumi; Yoku Inoue; Hidenori Mimura; Toru Aoki; Takayuki Nakano


    In this study, we developed a new neutron-detection device using a boron gallium nitride (BGaN) semiconductor in which the B atom acts as a neutron converter. BGaN and gallium nitride (GaN) samples were grown by metal organic vapor phase epitaxy, and their radiation detection properties were evaluated. GaN exhibited good sensitivity to α-rays but poor sensitivity to γ-rays. Moreover, we confirmed that electrons were generated in the depletion layer under neutron irradiation. This resulted in ...

  20. Nitriding and Nitrocarburizing; Current Status and Future Challenges

    DEFF Research Database (Denmark)

    Somers, Marcel A. J.

    in a compound layer consisting of iron (carbo-)nitrides and a diffusion zone, consisting of a dispersion of alloying element nitrides in ferrite. The compound layer provides beneficial tribological and corrosion performance, while the diffusion zone is responsible for improved fatigue performance. Furthermore......, aspects of low temperature surface hardening of stainless steels in a gaseous environment will be addressed. Here, the developed case consists of expanded austenite and/or expanded martensite, which essentially is a super saturated solid solution of nitrogen/carbon in austenite/martensite. The current...

  1. Argon: Systematic Review on Neuro- and Organoprotective Properties of an “Inert” Gas

    Directory of Open Access Journals (Sweden)

    Anke Höllig


    Full Text Available Argon belongs to the group of noble gases, which are regarded as chemically inert. Astonishingly some of these gases exert biological properties and during the last decades more and more reports demonstrated neuroprotective and organoprotective effects. Recent studies predominately use in vivo or in vitro models for ischemic pathologies to investigate the effect of argon treatment. Promising data has been published concerning pathologies like cerebral ischemia, traumatic brain injury and hypoxic ischemic encephalopathy. However, models applied and administration of the therapeutic gas vary. Here we provide a systematic review to summarize the available data on argon’s neuro- and organoprotective effects and discuss its possible mechanism of action. We aim to provide a summary to allow further studies with a more homogeneous setting to investigate possible clinical applications of argon.

  2. Surface modification of poly (vinyl chloride) by long-distance and direct argon RF plasma

    Institute of Scientific and Technical Information of China (English)


    This paper reports the effects of long- distance and direct argon radio frequency (RF) plasma surface treatment on polyvinyl chloride (PVC) films in terms of changes in surface wettability and surface chemistry. The surface properties are characterized by the water contact angle measurement, X-ray photoelectron spectroscopy (XPS) and scanning electron microscopy (SEM). The mechanism is further analyzed and the role of all kinds of active species, e.g. electrons, ions and free radicals involved in plasma surface modification is further evaluated. Results show that the long-distance and direct RF plasma treatments modify the PVC surface in morphology and composition, and both modifications cause surface oxidation of PVC films, in the forming of functional groups enhancing polymer wettability. The effect of the long-distance argon RF plasma is more notable. This suggests that long-distance argon RF plasma could restrain the ion and electron eroding effect and enhance free radical reaction.

  3. The WArP Experiment: A Double-Phase Argon Detector for Dark Matter Searches

    Directory of Open Access Journals (Sweden)

    Andrea Zani


    Full Text Available Cryogenic noble liquids emerged in the previous decade as one of the best media to perform WIMP dark matter searches, in particular due to the possibility to scale detector volumes to multiton sizes. The WArP experiment was then developed as one of the first to implement the idea of coupling Argon in liquid and gas phase, in order to discriminate β/γ-interactions from nuclear recoils and then achieve reliable background rejection. Since its construction, other projects spawned, employing Argon and Xenon and following its steps. The WArP 100l detector was assembled in 2008 at the Gran Sasso National Laboratories (LNGS, as the final step of a years-long R&D programme, aimed at characterising the technology of Argon in double phase for dark matter detection. Though it never actually performed a physics run, a technical run was taken in 2011, to characterise the detector response.

  4. Coherent and incoherent Thomson scattering on an argon/hydrogen microwave plasma torch with transient behaviour (United States)

    Obrusník, A.; Synek, P.; Hübner, S.; van der Mullen, J. J. A. M.; Zajíčková, L.; Nijdam, S.


    A new method of processing time-integrated coherent Thomson scattering spectra is presented, which provides not only the electron density and temperature but also information about the transient behaviour of the plasma. Therefore, it is an alternative to single-shot Thomson scattering measurements as long as the scattering is coherent. The method is applied to a microwave plasma torch operating in argon or a mixture of argon with hydrogen at atmospheric pressure. Electron densities up to 8\\cdot {{10}21} m-3 (ionization degree above 10-3) were observed, which is more than two times higher than presented in earlier works on comparable discharges. Additionally, a parametric study with respect to the argon/hydrogen ratio and the input power was carried out and the results are discussed together with earlier Stark broadening measurements on the same plasma.

  5. First measurement of surface nuclear recoil background for argon dark matter searches

    CERN Document Server

    Xu, Jingke; Westerdale, Shawn; Calaprice, Frank; Wright, Alexander; Shi, Zhiming


    One major background in direct searches for weakly interacting massive particles (WIMPs) comes from the deposition of radon progeny on detector surfaces. The most dangerous surface background is the $^{206}$Pb recoils produced by $^{210}$Po decays. In this letter, we report the first characterization of this background in liquid argon. The scintillation signal of low energy Pb recoils is measured to be highly quenched in argon, and we estimate that the 103keV $^{206}$Pb recoil background will produce a signal equal to that of a ~5keV (30keV) electron recoil ($^{40}$Ar recoil). In addition, we demonstrate that this dangerous $^{210}$Po surface background can be suppressed by a factor of ~100 or higher using pulse shape discrimination methods, which can make argon dark matter detectors near background-free and enhance their potential for discovery of medium- and high-mass WIMPs. We also discuss the impact on other low background experiments.

  6. Producing 30 Tons of Underground Argon for the Next Generation Dark Matter Detector (United States)

    Alexander, Thomas; DarkSide Collaboration Collaboration


    The DarkSide-20k experiment seeks to collect and purify 10s of tons of argon gas derived from the Doe Canyon CO2 well in southwestern Colorado, which has been shown to have a 39 Ar concentration of 0.73% of that found in argon collected from the atmosphere. Building upon the work of the DarkSide-50 collaboration, the DarkSide-20k experiment is building and installing a plant capable of producing 100 kg/day of 99.9% pure argon from the same underground source. To achieve this rate, the next generation plant (named Urania) will need to be able to mitigate minor contaminants in the well gas that hampered the previous generation plant. In this talk we will describe the new extraction plant, the identification of the minor contaminates, and how these contaminates are being mitigated.

  7. Time Passes - Argon Isotopes as Tracers of Fluids in the Earth's Crust (United States)

    Kelley, Simon P.


    Recent experimental measurements of noble gas solubility in silicate minerals (e.g. Jackson et al. 2013, 2015) means that we can begin to explore the use of noble gas partition between minerals and fluids to understand their residence and transport in the Earth's crust. One starting point for this exploration is the distribution of noble gases and halogens in crustal fluids which was reviewed by Kendrick and Burnard (2013). In particular, K&B (2013) noted that time is a key parameter in understanding noble gas tracers in crustal processes; yielding information such as the residence time of water in a reservoir based on 4He acquired from aquifer rocks, and the 40Ar/39Ar age of fluid inclusions based on trapped fluid and minerals in quartz. Argon isotope variations in natural systems have been measured during studies of 40Ar/39Ar ages to quantify the rates and timescales of crustal processes. There are also studies of fluids in similar rocks, notably in fluid inclusions, providing the opportunity to quantify the variations in the crust. Partition of argon between mineral phases under conditions of varying fluid availability can be compared in systems where 40Ar/39Ar measurements indicate the preservation of non-radiogenic argon (both excess and atmospheric) in the minerals. Rather than a simple picture of radiogenic argon contents increasing with crustal age, and gradual depletion of atmospheric argon in deeper fluids, what emerges is a sometimes dynamic and sometimes static system in different zones of the crust. While it can be shown that the hydrous fluid in sandstone reservoirs contained excess argon, analyses of authigenic minerals rarely exhibit 40Ar/39Ar ages in excess of the growth age. In this scenario, the incompatible nature of argon means that the fluid acts as an effective infinite reservoir and radiogenic argon dominates the potassium rich authigenic minerals. The controls on noble gas distribution are also well illustrated by deep crustal rocks such as

  8. Atomistic-Continuum Hybrid Simulation of Heat Transfer between Argon Flow and Copper Plates

    CERN Document Server

    Mao, Yijin; Chen, C L


    A simulation work aiming to study heat transfer coefficient between argon fluid flow and copper plate is carried out based on atomistic-continuum hybrid method. Navier-Stokes equations for continuum domain are solved through the Pressure Implicit with Splitting of Operators (PISO) algorithm, and the atom evolution in molecular domain is solved through the Verlet algorithm. The solver is validated by solving Couette flow and heat conduction problems. With both momentum and energy coupling method applied, simulations on convection of argon flows between two parallel plates are performed. The top plate is kept as a constant velocity and has higher temperature, while the lower one, which is modeled with FCC copper lattices, is also fixed but has lower temperature. It is found that, heat transfer between argon fluid flow and copper plate in this situation is much higher than that at macroscopic when the flow is fully developed.

  9. Ionic Wind Phenomenon and Charge Carrier Mobility in Very High Density Argon Corona Discharge Plasma (United States)

    Nur, M.; Bonifaci, N.; Denat, A.


    Wind ions phenomenon has been observed in the high density argon corona discharge plasma. Corona discharge plasma was produced by point to plane electrodes and high voltage DC. Light emission from the recombination process was observed visually. The light emission proper follow the electric field lines that occur between point and plane electrodes. By using saturation current, the mobilities of non-thermal electrons and ions have been obtained in argon gas and liquid with variation of density from 2,5 1021 to 2 1022 cm-3. In the case of ions, we found that the behaviour of the apparent mobility inversely proportional to the density or follow the Langevin variation law. For non-thermal electron, mobility decreases and approximately follows a variation of Langevin type until the density <= 0,25 the critical density of argon.

  10. Melting of "non-magic" argon clusters and extrapolation to the bulk limit (United States)

    Senn, Florian; Wiebke, Jonas; Schumann, Ole; Gohr, Sebastian; Schwerdtfeger, Peter; Pahl, Elke


    The melting of argon clusters ArN is investigated by applying a parallel-tempering Monte Carlo algorithm for all cluster sizes in the range from 55 to 309 atoms. Extrapolation to the bulk gives a melting temperature of 85.9 K in good agreement with the previous value of 88.9 K using only Mackay icosahedral clusters for the extrapolation [E. Pahl, F. Calvo, L. Koči, and P. Schwerdtfeger, "Accurate melting temperatures for neon and argon from ab initio Monte Carlo simulations," Angew. Chem., Int. Ed. 47, 8207 (2008)]. Our results for argon demonstrate that for the extrapolation to the bulk one does not have to restrict to magic number cluster sizes in order to obtain good estimates for the bulk melting temperature. However, the extrapolation to the bulk remains a problem, especially for the systematic selection of suitable cluster sizes.

  11. The Role of Carbides in Formation of Surface Layer on Steel X153CrMoV12 Due to Low-Pressure Nitriding (Vacuum Nitriding) (United States)

    Januszewicz, B.; Wołowiec, E.; Kula, P.


    The mechanism of formation of surface layer on steel X153CrMoV12 in the process of vacuum nitriding (low-pressure nitriding) in a universal vacuum furnace in an atmosphere of dissociated ammonia at a pressure of 30 × 102 Pa (30 mbar) is studied by the methods of light microscopy and measurement of microhardness. The chemical composition of the nitrided layers is determined.

  12. ZeroFlow - new, environmentally friendly method of controlled gas nitriding used for selected car parts (United States)

    Kowalska, J.; Małdziński, L.


    This article presents new method of controlled gas nitriding called ZeroFlow, which is used for nitriding of selected car parts, such as crankshafts, camshafts, piston rings, poppet valve springs and discs, piston pins or nozzles for unit injectors. This article will discuss the essence of controlled gas nitriding process, with an emphasis on the influence of process parameters on results of nitriding process. This information are the basis to understand the issue of the kinetics of nitrided layer growth, and as it follows - for its practical application in designing, regulation and control of nitriding processes using simulation models (simulator of the kinetics of nitrided layer growth). This article will also present the simulator of the kinetics of nitrided layer growth, which supports nitriding using ZeroFlow method - through the use of simulator layers are obtained in the shortest possible time, which is connected with the lowest energy consumption; therefore, nitriding process using ZeroFlow method and simulator of the kinetics of nitrided layer growth is both economical and environmentally friendly.

  13. Graphitic carbon nitride based nanocomposites: a review. (United States)

    Zhao, Zaiwang; Sun, Yanjuan; Dong, Fan


    Graphitic carbon nitride (g-C(3)N(4)), as an intriguing earth-abundant visible light photocatalyst, possesses a unique two-dimensional structure, excellent chemical stability and tunable electronic structure. Pure g-C(3)N(4) suffers from rapid recombination of photo-generated electron-hole pairs resulting in low photocatalytic activity. Because of the unique electronic structure, the g-C(3)N(4) could act as an eminent candidate for coupling with various functional materials to enhance the performance. According to the discrepancies in the photocatalytic mechanism and process, six primary systems of g-C(3)N(4)-based nanocomposites can be classified and summarized: namely, the g-C(3)N(4) based metal-free heterojunction, the g-C(3)N(4)/single metal oxide (metal sulfide) heterojunction, g-C(3)N(4)/composite oxide, the g-C(3)N(4)/halide heterojunction, g-C(3)N(4)/noble metal heterostructures, and the g-C(3)N(4) based complex system. Apart from the depiction of the fabrication methods, heterojunction structure and multifunctional application of the g-C(3)N(4)-based nanocomposites, we emphasize and elaborate on the underlying mechanisms in the photocatalytic activity enhancement of g-C(3)N(4)-based nanocomposites. The unique functions of the p-n junction (semiconductor/semiconductor heterostructures), the Schottky junction (metal/semiconductor heterostructures), the surface plasmon resonance (SPR) effect, photosensitization, superconductivity, etc. are utilized in the photocatalytic processes. Furthermore, the enhanced performance of g-C(3)N(4)-based nanocomposites has been widely employed in environmental and energetic applications such as photocatalytic degradation of pollutants, photocatalytic hydrogen generation, carbon dioxide reduction, disinfection, and supercapacitors. This critical review ends with a summary and some perspectives on the challenges and new directions in exploring g-C(3)N(4)-based advanced nanomaterials.

  14. Elastic Properties of Several Silicon Nitride Films

    Energy Technology Data Exchange (ETDEWEB)

    Liu, X.; Metcalf, T. H.; Wang, Q.; Photiadis, D. M.


    We have measured the internal friction (Q{sup -1}) of amorphous silicon nitride (a-SiN{sub x}) films prepared by a variety of methods, including low-pressure chemical-vapor deposition (LPCVD), plasma-enhanced chemical-vapor deposition (PECVD), and hot-wire chemical-vapor deposition (HWCVD) from 0.5 K to room temperature. The measurements are made by depositing the films onto extremely high-Q silicon double paddle oscillator substrates with a resonant frequency of {approx}5500 Hz. We find the elastic properties of these a-SiN{sub x} films resemble those of amorphous silicon (a-Si) films, demonstrating considerable variation which depends on the film growth methods and post deposition annealing. The internal friction for most of the films shows a broad temperature-independent plateau below 30 K, characteristic of amorphous solids. The values of Q{sup -1}, however, vary from film to film in this plateau region by more than one order of magnitude. This has been observed in tetrehedrally covalent-bonded amorphous thin films, like a-Si, a-Ge, and a-C. The PECVD films have the highest Q{sup -1} just like a normal amorphous solid, while LPCVD films have an internal friction more than one order of magnitude lower. All the films show a reduction of Q{sup -1} after annealing at 800 C, even for the LPCVD films which were prepared at 850 C. This can be viewed as a reduction of structural disorder.

  15. Drift time measurement in the ATLAS liquid argon electromagnetic calorimeter using cosmic muons

    DEFF Research Database (Denmark)

    Aad..[], G.; Dam, Mogens; Hansen, Jørgen Beck


    The ionization signals in the liquid argon of the ATLAS electromagnetic calorimeter are studied in detail using cosmic muons. In particular, the drift time of the ionization electrons is measured and used to assess the intrinsic uniformity of the calorimeter gaps and estimate its impact on the co......The ionization signals in the liquid argon of the ATLAS electromagnetic calorimeter are studied in detail using cosmic muons. In particular, the drift time of the ionization electrons is measured and used to assess the intrinsic uniformity of the calorimeter gaps and estimate its impact...

  16. Influence the loading effect on modification of PET film and fiber by Argon Plasma (United States)

    Vasilkin, D. P.; Shikova, T. G.; Titov, V. A.; Smirnov, S. A.; Kuzmicheva, L. A.


    Poly(ethylene terepthalate) films and fabrics were modified by low-pressure argon plasma at different area of samples been treated. Contact angles for water and glycerol were measured and surface energy was calculated for film surface characterization. Height of water capillary rise was measured for fabric. The changes in chemical structure of surface layer were analyzed by ATR-FTIR method. Influence of sample area on non-homogeneity of plasma modification was shown. Some experiments were performed with polypropylene treatment in flowing plasma afterglow to confirm the reactions of oxygen active species originated from gas products of poly(ethylene terepthalate) etching in argon plasma.

  17. Research of On-line Analytical Method of Trace Oxygen and Water in Argon

    Institute of Scientific and Technical Information of China (English)


    Metal sodium has an active chemical quality. When it is used as a coolant in a fast neutron reactor, it must be protected by a cover gas argon for safety operation of the reactor. But oxygen and water in argon can produce chemical reaction with sodium. Then sodium hydroxide, sodium oxide and hydrogen can be produced. This will be harmful to the safety operation of reactor. The purpose of controlling a level of impurity in the cover gas is for controlling a level of impurity in sodium. The research is to find an on-line determining method and a sampling system to monitor

  18. Pulse Compression by Filamentation in Argon with an Acoustic Optical Programmable Dispersive Filter for Predispersion Compensation

    Institute of Scientific and Technical Information of China (English)

    CHEN Xiao-Wei; JIANG Yong-Liang; LENG Yu-Xin; LIU Jun; GE Xiao-Chun; LI Ru-Xin; XU Zhi-Zhan


    @@ We have experimentally demonstrated pulses 0.4 mJ in duration smaller than 12 fs with an excellent spatial beam profile by self-guided propagation in argon. The original 52fs pulses from the chirped pulsed amplification laser system are first precompressed to 32 fs by inserting an acoustic optical programmable dispersive filter instrument into the laser system for spectrum reshaping and dispersion compensation, and the pulse spectrum is subsequently broadened by filamentation in an argon cell. By using chirped mirrors for post-dispersion compensation, the pulses are successfully compressed to smaller than 12fs.

  19. Experimental Measurement for Shock Velocity-Mass Velocity Relationship of Liquid Argon Up to 46 GPa

    Institute of Scientific and Technical Information of China (English)

    孟川民; 施尚春; 董石; 杨向东; 谭华; 经福谦


    Shock properties of liquid argon were measured in the shock pressure up to 46 GPa by employing the two-stage light gas gun. Liquid nitrogen was used as coolant liquid. The cryogenic target system has been improved to compare with the previous work. Shock velocities were measured with self-shorting electrical probes. Impactor velocities were measured with an electrical-magnetic induction system. Mass velocities were obtained by mean of shock impedance matching method. The experimental data shows that the slope of experimental Hugoniot curve of liquid argon begins to decrease above 30 GPa.

  20. Inner-shell Annihilation of Positrons in Argon, Iron and Copper Atoms

    CERN Document Server

    Abdel-Raouf, M A; El-Bakry, S Y


    The annihilation parameters of positrons with electrons in different shells of Argon, Iron and Copper atoms are calculated below the positronium (Ps) formation thresholds. Quite accurate ab initio calculations of the bound state wavefunctions of Argon, Iron and Copper orbitals are obtained from Cowan computer code. A least-squares variational method (LSVM) is used for determining the wavefunction of the positrons. The program is employed for calculating the s-wave partial cross sections of positrons scattered by Iron and Copper atoms. Our results of the effective charge are compared with available experimental and theoretical ones. --

  1. Evolution of precipitate in nickel-base alloy 718 irradiated with argon ions at elevated temperature (United States)

    Jin, Shuoxue; Luo, Fengfeng; Ma, Shuli; Chen, Jihong; Li, Tiecheng; Tang, Rui; Guo, Liping


    Alloy 718 is a nickel-base superalloy whose strength derives from γ'(Ni3(Al,Ti)) and γ″(Ni3Nb) precipitates. The evolution of the precipitates in alloy 718 irradiated with argon ions at elevated temperature were examined via transmission electron microscopy. Selected-area electron diffraction indicated superlattice spots disappeared after argon ion irradiation, which showing that the ordered structure of the γ' and γ″ precipitates became disordered. The size of the precipitates became smaller with the irradiation dose increasing at 290 °C.

  2. Intermolecular interaction potentials of methane-argon complex calculated using LDA approaches

    Institute of Scientific and Technical Information of China (English)

    Bai Yu-Lin; Chen Xiang-Rong; Zhou Xiao-Lin; Yang Xiang-Dong; Wang Hai-Yan


    The intermolecular interaction potential for methane-argon complex is calculated by local density approximation (LDA) approaches. The calculated potential has a minimum when the intermolecular distance of methane-argon complex is 6.75 a.u.; the corresponding depth of the potential is 0.0163eV which has good agreement with experimental data. We also have made a nonlinear fitting of our results for the Lennard-Jones (12-6) potential function and obtain that V(R) = 143794365.332/R12 - 3032.093/R6 (R in a.u. and V(R) in eV).

  3. Compact cryogenic source of periodic hydrogen and argon droplet beams for relativistic laser-plasma generation

    Energy Technology Data Exchange (ETDEWEB)

    Fraga, R. A. Costa; Kalinin, A.; Kuehnel, M.; Schottelius, A. [Institut fuer Kernphysik, J. W. Goethe-Universitaet, Max-von-Laue-Str. 1, 60438 Frankfurt am Main (Germany); Hochhaus, D. C.; Neumayer, P. [EMMI Extreme Matter Institute and Research Division, GSI Helmholtzzentrum fuer Schwerionenforschung, Planckstr. 1, 64291 Darmstadt (Germany); FIAS Frankfurt Institute for Advanced Studies, J. W. Goethe-Universitaet, Ruth-Moufang-Str. 1, 60438 Frankfurt am Main (Germany); Polz, J. [Institut fuer Optik und Quantenelektronik, Max-Wien-Platz 1, 07743 Jena (Germany); Kaluza, M. C. [Institut fuer Optik und Quantenelektronik, Max-Wien-Platz 1, 07743 Jena (Germany); Helmholtz-Institut Jena, Froebelstieg 3, 07743 Jena (Germany); Grisenti, R. E. [Institut fuer Kernphysik, J. W. Goethe-Universitaet, Max-von-Laue-Str. 1, 60438 Frankfurt am Main (Germany); GSI Helmholtzzentrum fuer Schwerionenforschung, Planckstr. 1, 64291 Darmstadt (Germany)


    We present a cryogenic source of periodic streams of micrometer-sized hydrogen and argon droplets as ideal mass-limited target systems for fundamental intense laser-driven plasma applications. The highly compact design combined with a high temporal and spatial droplet stability makes our injector ideally suited for experiments using state-of-the-art high-power lasers in which a precise synchronization between the laser pulses and the droplets is mandatory. We show this by irradiating argon droplets with multi-terawatt pulses.

  4. Performance of the Electronic Readout of the ATLAS Liquid Argon Calorimeters

    CERN Document Server

    Abreu, H; Aleksa, M; Aperio Bella, L; Archambault, JP; Arfaoui, S; Arnaez, O; Auge, E; Aurousseau, M; Bahinipati, S; Ban, J; Banfi, D; Barajas, A; Barillari, T; Bazan, A; Bellachia, F; Beloborodova, O; Benchekroun, D; Benslama, K; Berger, N; Berghaus, F; Bernat, P; Bernier, R; Besson, N; Binet, S; Blanchard, JB; Blondel, A; Bobrovnikov, V; Bohner, O; Boonekamp, M; Bordoni, S; Bouchel, M; Bourdarios, C; Bozzone, A; Braun, HM; Breton, D; Brettel, H; Brooijmans, G; Caputo, R; Carli, T; Carminati, L; Caughron, S; Cavalleri, P; Cavalli, D; Chareyre, E; Chase, RL; Chekulaev, SV; Chen, H; Cheplakov, A; Chiche, R; Citterio, M; Cojocaru, C; Colas, J; Collard, C; Collot, J; Consonni, M; Cooke, M; Copic, K; Costa, GC; Courneyea, L; Cuisy, D; Cwienk, WD; Damazio, D; Dannheim, D; De Cecco, S; De La Broise, X; De La Taille, C; de Vivie, JB; Debennerot, B; Delagnes, E; Delmastro, M; Derue, F; Dhaliwal, S; Di Ciaccio, L; Doan, O; Dudziak, F; Duflot, L; Dumont-Dayot, N; Dzahini, D; Elles, S; Ertel, E; Escalier, M; Etienvre, AI; Falleau, I; Fanti, M; Farooque, T; Favre, P; Fayard, Louis; Fent, J; Ferencei, J; Fischer, A; Fournier, D; Fournier, L; Fras, M; Froeschl, R; Gadfort, T; Gallin-Martel, ML; Gibson, A; Gillberg, D; Gingrich, DM; Göpfert, T; Goodson, J; Gouighri, M; Goy, C; Grassi, V; Gray, J; Guillemin, T; Guo, B; Habring, J; Handel, C; Heelan, L; Heintz, H; Helary, L; Henrot-Versille, S; Hervas, L; Hobbs, J; Hoffman, J; Hostachy, JY; Hoummada, A; Hrivnac, J; Hrynova, T; Hubaut, F; Huber, J; Iconomidou-Fayard, L; Iengo, P; Imbert, P; Ishmukhametov, R; Jantsch, A; Javadov, N; Jezequel, S; Jimenez Belenguer, M; Ju, XY; Kado, M; Kalinowski, A; Kar, D; Karev, A; Katsanos, I; Kazarinov, M; Kerschen, N; Kierstead, J; Kim, MS; Kiryunin, A; Kladiva, E; Knecht, N; Kobel, M; Koletsou, I; König, S; Krieger, P; Kukhtin, V; Kuna, M; Kurchaninov, L; Labbe, J; Lacour, D; Ladygin, E; Lafaye, R; Laforge, B; Lamarra, D; Lampl, W; Lanni, F; Laplace, S; Laskus, H; Le Coguie, A; Le Dortz, O; Le Maner, C; Lechowski, M; Lee, SC; Lefebvre, M; Leonhardt, K; Lethiec, L; Leveque, J; Liang, Z; Liu, C; Liu, T; Liu, Y; Loch, P; Lu, J; Ma, H; Mader, W; Majewski, S; Makovec, N; Makowiecki, D; Mandelli, L; Mangeard, PS; Mansoulie, B; Marchand, JF; Marchiori, G; Martin, D; Martin-Chassard, G; Martin dit Latour, B; Marzin, A; Maslennikov, A; Massol, N; Matricon, P; Maximov, D; Mazzanti, M; McCarthy, T; McPherson, R; Menke, S; Meyer, JP; Ming, Y; Monnier, E; Mooshofer, P; Neganov, A; Niedercorn, F; Nikolic-Audit, I; Nugent, IM; Oakham, G; Oberlack, H; Ocariz, J; Odier, J; Oram, CJ; Orlov, I; Orr, R; Parsons, JA; Peleganchuk, S; Penson, A; Perini, L; Perrodo, P; Perrot, G; Perus, A; Petit, E; Pisarev, I; Plamondon, M; Poffenberger, P; Poggioli, L; Pospelov, G; Pralavorio, P; Prast, J; Prudent, X; Przysiezniak, H; Puzo, P; Quentin, M; Radeka, V; Rajagopalan, S; Rauter, E; Reimann, O; Rescia, S; Resende, B; Richer, JP; Ridel, M; Rios, R; Roos, L; Rosenbaum, G; Rosenzweig, H; Rossetto, O; Roudil, W; Rousseau, D; Ruan, X; Rudert, A; Rusakovich, N; Rusquart, P; Rutherfoord, J; Sauvage, G; Savine, A; Schaarschmidt, J; Schacht, P; Schaffer, A; Schram, M; Schwemling, P; Seguin Moreau, N; Seifert, F; Serin, L; Seuster, R; Shalyugin, A; Shupe, M; Simion, S; Sinervo, P; Sippach, W; Skovpen, K; Sliwa, R; Soukharev, A; Spano, F; Stavina, P; Straessner, A; Strizenec, P; Stroynowski, R; Talyshev, A; Tapprogge, S; Tarrade, F; Tartarelli, GF; Teuscher, R; Tikhonov, Yu; Tocut, V; Tompkins, D; Thompson, P; Tisserant, S; Todorov, T; Tomasz, F; Trincaz-Duvoid, S; Trinh, Thi N; Trochet, S; Trocme, B; Tschann-Grimm, K; Tsionou, D; Ueno, R; Unal, G; Urbaniec, D; Usov, Y; Voss, K; Veillet, JJ; Vincter, M; Vogt, S; Weng, Z; Whalen, K; Wicek, F; Wilkens, H; Wingerter-Seez, I; Wulf, E; Yang, Z; Ye, J; Yuan, L; Yurkewicz, A; Zarzhitsky, P; Zerwas, D; Zhang, H; Zhang, L; Zhou, N; Zimmer, J; Zitoun, R; Zivkovic, L


    The ATLAS detector has been designed for operation at the Large Hadron Collider at CERN. ATLAS includes electromagnetic and hadronic liquid argon calorimeters, with almost 200,000 channels of data that must be sampled at the LHC bunch crossing frequency of 40 MHz. The calorimeter electronics calibration and readout are performed by custom electronics developed specifically for these purposes. This paper describes the system performance of the ATLAS liquid argon calibration and readout electronics, including noise, energy and time resolution, and long term stability, with data taken mainly from full-system calibration runs performed after installation of the system in the ATLAS detector hall at CERN.

  5. Attosecond time delay in valence photoionization and photorecombination of argon: a TDLDA study

    CERN Document Server

    Magrakvelidze, Maia; Dixit, Gopal; Ivanov, Misha; Chakraborty, Himadri S


    We determine and analyze the quantum phases and time delays in photoionization and photorecombination of valence 3p and 3s electrons of argon using the Kohn-Sham local density functional approach. The time-dependent local density approximation (TDLDA) is used to account for the electron correlation. Resulting attosecond Wigner-Smith time delays show excellent agreements with two recent independent experiments on argon that measured the relative 3s-3p time delay in photoionization [Physical Review Letters {\\bf 106}, 143002 (2011)] and the delay in 3p photorecombination [Physical Review Letters {\\bf 112}, 153002 (2014)

  6. Heat Transfer During Evaporation of Cesium From Graphite Surface in an Argon Environment

    Directory of Open Access Journals (Sweden)

    Bespala Evgeny


    Full Text Available The article focuses on discussion of problem of graphite radioactive waste formation and accumulation. It is shown that irradiated nuclear graphite being inalienable part of uranium-graphite reactor may contain fission and activation products. Much attention is given to the process of formation of radioactive cesium on the graphite element surface. It is described a process of plasma decontamination of irradiated graphite in inert argon atmosphere. Quasi-one mathematical model is offered, it describes heat transfer process in graphite-cesium-argon system. Article shows results of calculation of temperature field inside the unit cell. Authors determined the factors which influence on temperature change.

  7. Ablation of Barrett’s esophagus using the second-generation argon plasma coagulation

    Institute of Scientific and Technical Information of China (English)


    Objective To investigate the efficacy and safety of the second-generation argon plasma coagulation (VIO APC) in ablation of Barrett’s esophagus. Methods Eighteen patients with Barrett’s esophagus (12 males, median age of 55 years, median length of 2.1 cm,1 low-grade dysplasia, 13 cases of short segment Barrett’s esophagus) received VIO APC, which was performed at a power setting of 40W and argon gas flow at 1.5-2.0 L/min, "forced" mode, in 1-3 sessions (mean 1.3). All the patients received treatment with hi...

  8. A 20-Liter Test Stand with Gas Purification for Liquid Argon Research

    CERN Document Server

    Li, Yichen; Tang, Wei; Joshi, Jyoti; Qian, Xin; Diwan, Milind; Kettell, Steve; Morse, William; Rao, Triveni; Stewart, James; Tsang, Thomas; Zhang, Lige


    We describe the design of a 20-liter test stand constructed to study fundamental properties of liquid argon (LAr). This system utilizes a simple, cost-effective gas argon (GAr) purification to achieve ultra-high purity, which is necessary to study electron transport properties in LAr. An electron drift stack with up to 25 cm length is constructed to study electron drift, diffusion, and attachment at various electric fields. A gold photocathode and a pulsed laser are used as a bright electron source. The operational performance of this system is reported.

  9. Episodic growth of Mt. Shasta, CA, documented by argon geochronology (United States)

    Calvert, A. T.; Christiansen, R. L.


    eruptive focus shifted 1.5 km north (Misery Hill) between 50-35 ka, erupting silicic andesite and mafic dacite onto all sectors of the volcano. Flank vents directly south and north erupted domes and lavas 20-15 ka. At ~11 ka a voluminous episode began with the subplinian Red Banks pumice followed shortly by Shastina andesite/dacite lavas, domes, and pyroclastic flows, and soon after by Black Butte flank dacites. Existing 14C geochronology, and stratigraphic studies of the deposits show no eruptive breaks and constrain the episode to have lasted less than a few hundred years. Subsequent Holocene eruptions all issued from the modern summit (Hotlum cone), producing at least 10 large lava flows directed toward the NE sector, along with pyroclastic and debris flows, and a summit dome. Preliminary argon geochronology in progress dates summit lavas at 8.8, 5.8 and 4.7 ka.

  10. ArgonCube: a novel, fully-modular approach for the realization of large-mass liquid argon TPC neutrino detectors

    CERN Document Server

    Amsler, C; Asaadi, J; Auger, M; Barbato, F; Bay, F; Bishai, M; Bleiner, D; Borgschulte, A; Bremer, J; Cavus, E; Chen, H; De Geronimo, G; Ereditato, A; Fleming, B; Goldi, D; Hanni, R; Kose, U; Kreslo, I; La Mattina, F; Lanni, F; Lissauer, D; Luthi, M; Lutz, P; Marchionni, A; Mladenov, D; Nessi, M; Noto, F; Palamara, O; Raaf, J L; Radeka, V; Rudolph Von Rohr, Ch; Smargianaki, D; Soderberg, M; Strauss, Th; Weber, M; Yu, B; Zeller, G P; Zeyrek, M; CERN. Geneva. SPS and PS Experiments Committee; SPSC


    The Liquid Argon Time Projection Chamber is a prime candidate detector for future neutrino oscillation physics experiments, underground neutrino observatories and proton decay searches. A large international project based on this technology is currently being considered at the future LBNF facility in the United States on the very large mass scale of 40 kton. In this document, following the long standing R&D work conducted over the last years in several laboratories in Europe and in the United States, we intend to propose a novel Liquid Argon TPC approach based on a fully-modular, innovative design, the ArgonCube. The related R&D work will proceed along two main directions; one aimed at on the assessment of the proposed modular detector design, the other on the exploitation of new signal readout methods. Such a strategy will provide high performance while being cost-effective and robust at the same time. According to our plans, we will firstly realize a detector prototype hosted in a cryostat that is a...

  11. Numerical Simulation of the Thermal Conductivity of Thermal Insulation Pipe by Vacuum and High Pressure Argon Pre-filled

    Institute of Scientific and Technical Information of China (English)


    [Abstract]By analyzing the insulation effect of argon-filled tubing and vacuum-insulated tubing before and after hydrogen permeation respectively, a conclusion can be drawn that the insulated tubing filled with high pressure argon is better than the vacuum insulated tubing considering the lifetime and heat insulation effect.

  12. Microwave Spectra and Molecular Structures of 2-CHLORO-1,1-DIFLUOROETHYLENE and its Complex with Argon (United States)

    Messinger, Joseph P.; Knowlton, Gregory S.; Sundheim, Kathryn M.; Leung, Helen O.; Marshall, Mark D.


    Chirped-pulse and Balle-Flygare spectrometers are used to obtain Fourier transform microwave spectra of 2-chloro-1,1-difluoroethylene and its complex with argon from 5.5 to 21.0 GHz, allowing for the geometries of both species to be determined. A total of six isotopologues are observed each for the monomer and dimer, including the most abundant species, the singly-substituted ^{37}Cl and two singly-substituted ^{13}C isotopologues in natural abundance, and deuterated versions of both the ^{35}Cl and ^{37}Cl species using an isotopically enriched sample. Similar to the previously studied argon-haloethylene complexes, the argon shows a preference for close contact with heavier atoms. Tunneling of the argon between two equivalent non-planar structures, similar to that in argon-cis-1,2-difluoroethylene, is not observed in this complex.

  13. Crystallographic phases and magnetic properties of iron nitride films

    Energy Technology Data Exchange (ETDEWEB)

    Li, Guo-Ke [Department of Physics, Hebei Advanced Thin Films Laboratory, Hebei Normal University, Shijiazhuang 050024 (China); Department of Mathematics and Physics, Shijiazhuang Tiedao University, Shijiazhuang 050043 (China); Liu, Yan; Zhao, Rui-Bin [Department of Physics, Hebei Advanced Thin Films Laboratory, Hebei Normal University, Shijiazhuang 050024 (China); Shen, Jun-Jie [Department of Mathematics and Physics, Shijiazhuang Tiedao University, Shijiazhuang 050043 (China); Wang, Shang; Shan, Pu-Jia; Zhen, Cong-Mian [Department of Physics, Hebei Advanced Thin Films Laboratory, Hebei Normal University, Shijiazhuang 050024 (China); Hou, Deng-Lu, E-mail: [Department of Physics, Hebei Advanced Thin Films Laboratory, Hebei Normal University, Shijiazhuang 050024 (China)


    Iron nitride films, including single phase films of α-FeN (expanded bcc Fe), γ′-Fe{sub 4}N, ε-Fe{sub 3−x}N (0 ≤ x ≤ 1), and γ″-FeN, were sputtered onto AlN buffered glass substrates. It was found possible to control the phases in the films merely by changing the nitrogen partial pressure during deposition. The magnetization decreased with increased nitrogen concentration and dropped to zero when the N:Fe ratio was above 0.5. The experimental results, along with spin polarized band calculations, have been used to discuss and analyze the magnetic properties of iron nitrides. It has been demonstrated that in addition to influencing the lattice constant of the various iron nitrides, the nearest N atoms have a significant influence on the exchange splitting of the Fe atoms. Due to the hybridization of Fe-3d and N-2p states, the magnetic moment of Fe atoms decreases with an increase in the number of nearest neighbor nitrogen atoms. - Highlights: • Single phase γ′-Fe{sub 4}N, ε-Fe{sub 3−x}N, and γ″-FeN films were obtained using dc sputtering. • The phases in iron nitride films can be controlled by the nitrogen partial pressure. • The nearest N neighbors have a significant influence on the exchange splitting of Fe.

  14. Development of high-thermal-conductivity silicon nitride ceramics

    Directory of Open Access Journals (Sweden)

    You Zhou


    Full Text Available Silicon nitride (Si3N4 with high thermal conductivity has emerged as one of the most promising substrate materials for the next-generation power devices. This paper gives an overview on recent developments in preparing high-thermal-conductivity Si3N4 by a sintering of reaction-bonded silicon nitride (SRBSN method. Due to the reduction of lattice oxygen content, the SRBSN ceramics could attain substantially higher thermal conductivities than the Si3N4 ceramics prepared by the conventional gas-pressure sintering of silicon nitride (SSN method. Thermal conductivity could further be improved through increasing the β/α phase ratio during nitridation and enhancing grain growth during post-sintering. Studies on fracture resistance behaviors of the SRBSN ceramics revealed that they possessed high fracture toughness and exhibited obvious R-curve behaviors. Using the SRBSN method, a Si3N4 with a record-high thermal conductivity of 177 Wm−1K−1 and a fracture toughness of 11.2 MPa m1/2 was developed. Studies on the influences of two typical metallic impurity elements, Fe and Al, on thermal conductivities of the SRBSN ceramics revealed that the tolerable content limits for the two impurities were different. While 1 wt% of impurity Fe hardly degraded thermal conductivity, only 0.01 wt% of Al caused large decrease in thermal conductivity.

  15. Dispersion engineering silicon nitride waveguides for broadband nonlinear frequency conversion

    NARCIS (Netherlands)

    Epping, J.P.


    In this thesis, we investigated nonlinear frequency conversion of optical wavelengths using integrated silicon nitride (Si3N4) waveguides. Two nonlinear conversion schemes were considered: seeded four-wave mixing and supercontinuum generation. The first—seeded four-wave mixing—is investigated by a n

  16. Stress in and texture of PVD deposited metal nitride films

    NARCIS (Netherlands)

    Machunze, R.


    Thin metal nitride films deposited by Physical Vapor Deposition (PVD) are used amongst many other applications as wear protective coatings in tool industry or as diffusion barriers in integrated circuit technology. Typically these films exhibit a residual in-plane stress when deposited onto rigid su

  17. Microstructural Characterization of Low Temperature Gas Nitrided Martensitic Stainless Steel

    DEFF Research Database (Denmark)

    Fernandes, Frederico Augusto Pires; Christiansen, Thomas Lundin; Somers, Marcel A. J.


    The present work presents microstructural investigations of the surface zone of low temperature gas nitrided precipitation hardening martensitic stainless steel AISI 630. Grazing incidence X-ray diffraction was applied to investigate the present phases after successive removal of very thin sections...

  18. Proportional control valves integrated in silicon nitride surface channel technology

    NARCIS (Netherlands)

    Groen, Maarten S.; Groenesteijn, Jarno; Meutstege, Esken; Brookhuis, Robert A.; Brouwer, Dannis M.; Lötters, Joost C.; Wiegerink, Remco J.


    We have designed and realized two types of proportional microcontrol valves in a silicon nitride surface channel technology process. This enables on-die integration of flow controllers with other surface channel devices, such as pressure sensors or thermal or Coriolis-based (mass) flow sensors, to o

  19. Gallium Nitride MMICs for mm-Wave Power Operation

    NARCIS (Netherlands)

    Quay, R.; Maroldt, S.; Haupt, C.; Heijningen, M. van; Tessmann, A.


    In this paper a Gallium Nitride MMIC technology for high-power amplifiers between 27 GHz and 101 GHz based on 150 nm- and 100 nm-gate technologies is presented. The GaN HEMT MMICs are designed using coplanar waveguide transmission-line-technology on 3-inch semi-insulating SiC substrates. The measure

  20. Advances and directions of ion nitriding/carburizing (United States)

    Spalvins, Talivaldis


    Ion nitriding and carburizing are plasma activated thermodynamic processes for the production of case hardened surface layers not only for ferrous materials, but also for an increasing number of nonferrous metals. When the treatment variables are properly controlled, the use of nitrogenous or carbonaceous glow discharge medium offers great flexibility in tailoring surface/near-surface properties independently of the bulk properties. The ion nitriding process has reached a high level of maturity and has gained wide industrial acceptance, while the more recently introduced ion carburizing process is rapidly gaining industrial acceptance. The current status of plasma mass transfer mechanisms into the surface regarding the formation of compound and diffusion layers in ion nitriding and carbon build-up ion carburizing is reviewed. In addition, the recent developments in design and construction of advanced equipment for obtaining optimized and controlled case/core properties is summarized. Also, new developments and trends such as duplex plasma treatments and alternatives to dc diode nitriding are highlighted.

  1. Thermionic field emission in gold nitride Schottky nanodiodes (United States)

    Spyropoulos-Antonakakis, N.; Sarantopoulou, E.; Kollia, Z.; Samardžija, Z.; Kobe, S.; Cefalas, A. C.


    We report on the thermionic field emission and charge transport properties of gold nitride nanodomains grown by pulsed laser deposition with a molecular fluorine laser at 157 nm. The nanodomains are sandwiched between the metallic tip of a conductive atomic force microscope and a thin gold layer forming thus a metal-semiconductor-metal junction. Although the limited existing data in the literature indicate that gold nitride was synthesized previously with low efficiency, poor stability, and metallic character; in this work, it is shown that gold nitride nanodomains exhibit semiconducting behavior and the metal-semiconductor-metal contact can be modeled with the back-to-back Schottky barrier model. From the experimental I-V curves, the main charge carrier transport process is found to be thermionic field emission via electron tunneling. The rectifying, near symmetric and asymmetric current response of nanocontacts is related to the effective contact area of the gold nitride nanodomains with the metals. A lower limit for the majority charge carriers concentration at the boundaries of nanodomains is also established using the full depletion approximation, as nanodomains with thickness as low as 6 nm were found to be conductive. Current rectification and charge memory effects are also observed in "quite small" conductive nanodomains (6-10 nm) due to stored charges. Indeed, charges near the surface are identified as inversion domains in the phase shift mapping performed with electrostatic force microscopy and are attributed to charge trapping at the boundaries of the nanodomains.


    Energy Technology Data Exchange (ETDEWEB)

    N. Badi; D. Starikov; C. Boney; A. Bensaoula; D. Johnstone


    This project fabricates long-life boron nitride/boron oxynitride thin film -based capacitors for advanced SiC power electronics with a broad operating temperature range using a physical vapor deposition (PVD) technique. The use of vapor deposition provides for precise control and quality material formation.

  3. Tailor-made functionalization of silicon nitride surfaces

    NARCIS (Netherlands)

    Arafat, A.; Schroën, C.G.P.H.; Smet, de L.C.P.M.; Sudhölter, E.J.R.; Zuilhof, H.


    This communication presents the first functionalization of a hydrogen-terminated silicon-rich silicon nitride (Si3Nx) surface with a well-defined, covalently attached organic monolayer. Properties of the resulting monolayers are monitored by measurement of the static water contact angle, X-ray photo

  4. Methods for improved growth of group III nitride buffer layers (United States)

    Melnik, Yurity; Chen, Lu; Kojiri, Hidehiro


    Methods are disclosed for growing high crystal quality group III-nitride epitaxial layers with advanced multiple buffer layer techniques. In an embodiment, a method includes forming group III-nitride buffer layers that contain aluminum on suitable substrate in a processing chamber of a hydride vapor phase epitaxy processing system. A hydrogen halide or halogen gas is flowing into the growth zone during deposition of buffer layers to suppress homogeneous particle formation. Some combinations of low temperature buffers that contain aluminum (e.g., AlN, AlGaN) and high temperature buffers that contain aluminum (e.g., AlN, AlGaN) may be used to improve crystal quality and morphology of subsequently grown group III-nitride epitaxial layers. The buffer may be deposited on the substrate, or on the surface of another buffer. The additional buffer layers may be added as interlayers in group III-nitride layers (e.g., GaN, AlGaN, AlN).

  5. Synthesis of hexagonal boron nitride graphene-like few layers (United States)

    Yuan, S.; Toury, B.; Journet, C.; Brioude, A.


    Self-standing highly crystallized hexagonal boron nitride (h-BN) mono-, bi- and few-layers have been obtained for the first time via the Polymer Derived Ceramics (PDCs) route by adding lithium nitride (Li3N) micropowders to liquid-state polyborazylene (PBN). Incorporation of Li3N as a crystallization promoter allows the onset of crystallization of h-BN at a lower temperature (1200 °C) than under classical conditions (1800 °C). The hexagonal structure was confirmed by both electron and X-ray diffraction.Self-standing highly crystallized hexagonal boron nitride (h-BN) mono-, bi- and few-layers have been obtained for the first time via the Polymer Derived Ceramics (PDCs) route by adding lithium nitride (Li3N) micropowders to liquid-state polyborazylene (PBN). Incorporation of Li3N as a crystallization promoter allows the onset of crystallization of h-BN at a lower temperature (1200 °C) than under classical conditions (1800 °C). The hexagonal structure was confirmed by both electron and X-ray diffraction. Electronic supplementary information (ESI) available: See DOI: 10.1039/c4nr01017e

  6. Heterostructures for Increased Quantum Efficiency in Nitride LEDs

    Energy Technology Data Exchange (ETDEWEB)

    Davis, Robert F. [Carnegie Mellon Univ., Pittsburgh, PA (United States)


    Task 1. Development of an advanced LED simulator useful for the design of efficient nitride-based devices. Simulator will contain graphical interface software that can be used to specify the device structure, the material parameters, the operating conditions and the desired output results. Task 2. Theoretical and experimental investigations regarding the influence on the microstructure, defect concentration, mechanical stress and strain and IQE of controlled changes in the chemistry and process route of deposition of the buffer layer underlying the active region of nitride-based blue- and greenemitting LEDs. Task 3. Theoretical and experimental investigations regarding the influence on the physical properties including polarization and IQE of controlled changes in the geometry, chemistry, defect density, and microstructure of components in the active region of nitride-based blue- and green-emitting LEDs. Task 4. Theoretical and experimental investigations regarding the influence on IQE of novel heterostructure designs to funnel carriers into the active region for enhanced recombination efficiency and elimination of diffusion beyond this region. Task 5. Theoretical and experimental investigations regarding the influence of enhanced p-type doping on the chemical, electrical, and microstructural characteristics of the acceptor-doped layers, the hole injection levels at Ohmic contacts, the specific contact resistivity and the IQE of nitride-based blue- and green-emitting LEDs. Development and optical and electrical characterization of reflective Ohmic contacts to n- and p-type GaN films.

  7. III-nitride grown on freestanding GaN nanostructures

    Energy Technology Data Exchange (ETDEWEB)

    Wang, Yongjin; Zhu, Hongbo [Institute of Communication Technology, Nanjing University of Posts and Telecommunications, Nanjing, Jiang-Su 210003 (China); Hu, Fangren; Hane, Kazuhiro [Department of Nanomechanics, Tohoku University, Sendai 980-8579 (Japan)


    We report here the epitaxial growth of III-nitride on the freestanding GaN nanostructures by molecular beam epitaxy growth. Various GaN nanostructures are defined by electron beam lithography and realized on GaN-on-silicon substrate by fast atom beam etching. Silicon substrate beneath GaN nanostructures is removed from the backside to form the freestanding GaN slab, and the epitaxial growth of III-nitride by MBE is performed on the prepared GaN template. The selective growth takes place with the assistance of GaN nanostructures and generates hexagonal III-nitride pyramids. Thin epitaxial structures, depending on the shape and the size of GaN nanostructure, can produce the promising optical performance. This work opens the way to combine silicon micromachining with the epitaxial growth of III-nitride by MBE on GaN-on-silicon substrate for further integrated optics (copyright 2012 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  8. Bond length variation in hydronitride molecules and nitride crystals (United States)

    Buterakos, L. A.; Gibbs, G. V.; Boisen, M. B.


    Bond lengths calculated for the coordination polyhedra in hydronitride molecules match average values observed for XN bonds involving main group X-cations in nitride crystals to within ˜0.04 Å. As suggested for oxide and sulfide molecules and crystals, the forces that determine the average bond lengths recorded for coordinated polyhedra in hydronitride molecules and nitride crystals appear to be governed in large part by the atoms that comprise the polyhedra and those that induce local charge balance. The forces exerted on the coordinated polyhedra by other parts of the structure seem to play a small if not an insignificant role in governing bond length variations. Bonded radii for the nitride ion obtained from theoretical electron density maps calculated for the molecules increase linearly with bond length as observed for nitride crystals with the rock salt structure. Promolecule radii calculated for the molecules correlate with bonded and ionic radii, indicating that the electron density distributions in hydronitride molecules possess a significant atomic component, despite bond type.

  9. Bone tissue response to plasma-nitrided titanium implant surfaces

    Directory of Open Access Journals (Sweden)

    Emanuela Prado FERRAZ


    Full Text Available A current goal of dental implant research is the development of titanium (Ti surfaces to improve osseointegration. Plasma nitriding treatments generate surfaces that favor osteoblast differentiation, a key event to the process of osteogenesis. Based on this, it is possible to hypothesize that plasma-nitrided Ti implants may positively impact osseointegration. Objective The aim of this study was to evaluate the in vivo bone response to Ti surfaces modified by plasma-nitriding treatments. Material and Methods Surface treatments consisted of 20% N2 and 80% H2, 450°C and 1.5 mbar during 1 h for planar and 3 h for hollow cathode. Untreated surface was used as control. Ten implants of each surface were placed into rabbit tibiae and 6 weeks post-implantation they were harvested for histological and histomorphometric analyses. Results Bone formation was observed in contact with all implants without statistically significant differences among the evaluated surfaces in terms of bone-to-implant contact, bone area between threads, and bone area within the mirror area. Conclusion Our results indicate that plasma nitriding treatments generate Ti implants that induce similar bone response to the untreated ones. Thus, as these treatments improve the physico-chemical properties of Ti without affecting its biocompatibility, they could be combined with modifications that favor bone formation in order to develop new implant surfaces.

  10. Continuous Fiber Ceramic Composite (CFCC) Program: Gaseous Nitridation

    Energy Technology Data Exchange (ETDEWEB)

    R. Suplinskas G. DiBona; W. Grant


    Textron has developed a mature process for the fabrication of continuous fiber ceramic composite (CFCC) tubes for application in the aluminum processing and casting industry. The major milestones in this project are System Composition; Matrix Formulation; Preform Fabrication; Nitridation; Material Characterization; Component Evaluation

  11. Nitride RCLEDs grown by MBE for POF applications

    Energy Technology Data Exchange (ETDEWEB)

    Calle, F.; Naranjo, F.B.; Fernandez, S.; Sanchez-Garcia, M.A.; Calleja, E.; Munoz, E. [ISOM and Departamento de Ingenieria Electronica, ETSI de Telecomunicacion, Universidad Politecnica de Madrid, Ciudad Universitaria, 28040 Madrid (Spain)


    Data links by means of plastic optical fibres (POF) demand efficient light emitting diodes (LEDs) at 510 nm, the most promising candidate being nitride-based resonant-cavity LEDs (RCLEDs). These devices include InGaN/GaN multiple-quantum-well (MQW) structures, and GaN/AlGaN distributed Bragg reflectors. Molecular beam epitaxy (MBE) offers some advantages for the fabrication of nitride RCLEDs, like high In incorporation in the active region, and control of the interface quality in the mirror. The main steps in the development of nitride-based RCLEDs using radio-frequency plasma-assisted MBE are addressed, with emphasis in a) p-type doping of GaN by MBE; b) the optimisation of growth, the design and characterisation of AlGaN/GaN stacks for a reflector in the micro-cavity; and c) the growth of InGaN layers, InGaN/GaN MQWs, and conventional InGaN LEDs, which are studied by structural, electrical and optical techniques. The design and fabrication of nitride RCLEDs, which satisfy spectral and thermal specifications for POF applications, are finally described. (Abstract Copyright[2002], Wiley Periodicals, Inc.)

  12. Compositional analysis of silicon oxide/silicon nitride thin films

    Directory of Open Access Journals (Sweden)

    Meziani Samir


    Full Text Available Hydrogen, amorphous silicon nitride (SiNx:H abbreviated SiNx films were grown on multicrystalline silicon (mc-Si substrate by plasma enhanced chemical vapour deposition (PECVD in parallel configuration using NH3/SiH4 gas mixtures. The mc-Si wafers were taken from the same column of Si cast ingot. After the deposition process, the layers were oxidized (thermal oxidation in dry oxygen ambient environment at 950 °C to get oxide/nitride (ON structure. Secondary ion mass spectroscopy (SIMS, Rutherford backscattering spectroscopy (RBS, Auger electron spectroscopy (AES and energy dispersive X-ray analysis (EDX were employed for analyzing quantitatively the chemical composition and stoichiometry in the oxide-nitride stacked films. The effect of annealing temperature on the chemical composition of ON structure has been investigated. Some species, O, N, Si were redistributed in this structure during the thermal oxidation of SiNx. Indeed, oxygen diffused to the nitride layer into Si2O2N during dry oxidation.

  13. Ex vivo and in vivo neuroprotection induced by argon when given after an excitotoxic or ischemic insult.

    Directory of Open Access Journals (Sweden)

    Hélène N David

    Full Text Available In vitro studies have well established the neuroprotective action of the noble gas argon. However, only limited data from in vivo models are available, and particularly whether postexcitotoxic or postischemic argon can provide neuroprotection in vivo still remains to be demonstrated. Here, we investigated the possible neuroprotective effect of postexcitotoxic-postischemic argon both ex vivo in acute brain slices subjected to ischemia in the form of oxygen and glucose deprivation (OGD, and in vivo in rats subjected to an intrastriatal injection of N-methyl-D-aspartate (NMDA or to the occlusion of middle-cerebral artery (MCAO. We show that postexcitotoxic-postischemic argon reduces OGD-induced cell injury in brain slices, and further reduces NMDA-induced brain damage and MCAO-induced cortical brain damage in rats. Contrasting with its beneficial effect at the cortical level, we show that postischemic argon increases MCAO-induced subcortical brain damage and provides no improvement of neurologic outcome as compared to control animals. These results extend previous data on the neuroprotective action of argon. Particularly, taken together with previous in vivo data that have shown that intraischemic argon has neuroprotective action at both the cortical and subcortical level, our findings on postischemic argon suggest that this noble gas could be administered during but not after ischemia, i.e. before but not after reperfusion has occurred, in order to provide cortical neuroprotection and to avoid increasing subcortical brain damage. Also, the effects of argon are discussed as regards to the oxygen-like chemical, pharmacological, and physical properties of argon.

  14. MEMS Aluminum Nitride Technology for Inertial Sensors (United States)

    Vigevani, Gabriele


    The design and fabrication of MEMS Inertial Sensors (both accelerometers and gyroscopes) made of Aluminum Nitride (AlN) is described in this dissertation. The goal of this work is to design and fabricate inertial sensors based on c-axis oriented AlN polycrystalline thin films. AlN is a post-CMOS compatible piezoelectric material widely used for acoustic resonators, such Bulk Acoustic Wave (BAW) and Lamb Wave Resonators (LWR). In this work we develop the design techniques necessary to obtain inertial sensors with AlN thin film technology. Being able to use AlN as structural material for both acoustic wave resonator and sensing elements is key to achieve the three level integration of RF-MEMS components, sensing elements and CMOS in the same chip. Using AlN as integration platform is particularly suitable for large consumer emerging markets where production costs are the major factor that determine a product success. In order to achieve a platform integration, the first part of this work focuses on the fabrication process: starting from the fabrication technology used for LWR devices, this work shows that by slightly modifying some of the fabrication steps it is possible to obtain MEMS accelerometers and gyroscopes with the same structural layers used for LWR. In the second part of this work, an extensive analysis, performed with analytical and Finite Element Models (FEM), is developed for beam and ring based structures. These models are of great importance as they provide tools to understand the physics of lateral piezoelectric beam actuation and the major limitations of this technology. Based on the models developed for beam based resonators, we propose two designs for Double Ended Tuning Fork (DETF) based accelerometers. In the last part of the dissertation, we show the experimental results and the measurements performed on actual devices. As this work shows analytically and experimentally, there are some fundamental constraints that limit the ultimate sensitivity

  15. Nitridation of Nb surface by nanosecond and femtosecond laser pulses

    Energy Technology Data Exchange (ETDEWEB)

    Farha, Ashraf Hassan [Department of Electrical and Computer Engineering and the Applied Research Center, Old Dominion University, Norfolk, VA 23529 (United States); Department of Physics, Faculty of Science, Ain Shams University, Cairo 11566 (Egypt); Ozkendir, Osman Murat [Tarsus Technology Faculty, Mersin University, Tarsus 33480 (Turkey); Koroglu, Ulas; Ufuktepe, Yüksel [Department of Physics, Cukurova University, Adana 01330 (Turkey); Elsayed-Ali, Hani E., E-mail: [Department of Electrical and Computer Engineering and the Applied Research Center, Old Dominion University, Norfolk, VA 23529 (United States)


    Highlights: • Laser nitridation of niobium is performed with nanosecond and femtosecond pulses. • Formation of NbN{sub x} with mixed α, β and δ phases was observed. • For femtosecond laser processed samples, laser induced ripple patterns oriented parallel to the beam polarization were formed. • X-ray absorption near edge structure show formation of Nb{sub 2}O{sub 5} on the surface of the samples. - Abstract: Niobium nitride samples were prepared by laser nitridation in a reactive nitrogen gas environment at room temperature using a Q-switched Nd:YAG nanosecond laser and a Ti:sapphire femtosecond laser. The effects of laser fluence on the formed phase, surface morphology, and electronic properties of the NbN{sub x} were investigated. The samples were prepared at different nanosecond laser fluences up to 5.0 ± 0.8 J/cm{sup 2} at fixed nitrogen pressure of ∼2.7 × 10{sup 4} Pa formed NbN{sub x} with mainly the cubic δ-NbN phase. Femtosecond laser nitrided samples were prepared using laser fluences up to 1.3 ± 0.3 mJ/cm{sup 2} at ∼4.0 × 10{sup 4} Pa nitrogen pressure. Laser induced ripple patterns oriented parallel to the beam polarization were formed with spacing that increases with the laser fluence. To achieve a laser-nitrided surface with desired crystal orientation the laser fulence is an important parameter that needs to be properly adjusted.

  16. Liquid argon dielectric breakdown studies with the MicroBooNE purification system

    Energy Technology Data Exchange (ETDEWEB)

    Acciarri, R.; Carls, B.; James, C.; Johnson, B.; Jostlein, H.; Lockwitz, S.; Lundberg, B.; Raaf, J. L.; Rameika, R.; Rebel, B.; Zeller, G. P.; Zuckerbrot, M.


    The proliferation of liquid argon time projection chamber detectors makes the characterization of the dielectric properties of liquid argon a critical task. To improve understanding of these properties, a systematic study of the breakdown electric field in liquid argon was conducted using a dedicated cryostat connected to the MicroBooNE cryogenic system at Fermilab. An electrode sphere-plate geometry was implemented using spheres with diameters of 1.3 mm, 5.0 mm, and 76 mm. The MicroBooNE cryogenic system allowed measurements to be taken at a variety of electronegative contamination levels ranging from a few parts-per-million to tens of parts-per-trillion. The cathode-anode distance was varied from 0.1 mm to 2.5 cm. The results demonstrate a geometric dependence of the electric field strength at breakdown. This study is the first time that the dependence of the breakdown field on stressed cathode area has been shown for liquid argon.

  17. Test beam results of a stereo preshower integrated in the liquid argon accordion calorimeter

    CERN Document Server

    Davis, R; Greenious, G; Kitching, P; Olsen, B; Pinfold, James L; Rodning, N L; Boos, E; Zhautykov, B O; Aubert, Bernard; Bazan, A; Beaugiraud, B; Boniface, J; Colas, Jacques; Eynard, G; Jézéquel, S; Le Flour, T; Linossier, O; Nicoleau, S; Sauvage, G; Thion, J; Van den Plas, D; Wingerter-Seez, I; Zitoun, R; Zolnierowski, Y; Chmeissani, M; Fernández, E; Garrido, L; Martínez, M; Padilla, C; Citterio, M; Gordon, H A; Lissauer, D; Ma, H; Makowiecki, D S; Radeka, V; Rahm, David Charles; Rescia, S; Stephani, D; Takai, H; Baisin, L; Berset, J C; Chevalley, J L; Gianotti, F; Gildemeister, O; Marin, C P; Nessi, Marzio; Poggioli, Luc; Richter, W; Vuillemin, V; Baze, J M; Delagnes, E; Gosset, L G; Lavocat, P; Lottin, J P; Mansoulié, B; Meyer, J P; Renardy, J F; Schwindling, J; Simion, S; Taguet, J P; Teiger, J; Walter, C; Collot, J; de Saintignon, P; Hostachy, J Y; Mahout, G; Barreiro, F; Del Peso, J; García, J; Hervás, L; Labarga, L; Romero, P; Scheel, C V; Chekhtman, A; Cousinou, M C; Dargent, P; Dinkespiler, B; Etienne, F; Fassnacht, P; Fouchez, D; Martin, L; Miotto, A; Monnier, E; Nagy, E; Olivetto, C; Tisserant, S; Battistoni, G; Camin, D V; Cavalli, D; Costa, G; Cozzi, L; Fedyakin, N N; Ferrari, A; Mandelli, L; Mazzanti, M; Perini, L; Resconi, S; Sala, P R; Beaudoin, G; Depommier, P; León-Florián, E; Leroy, C; Roy, P; Augé, E; Breton, D; Chase, Robert L; Chollet, J C; de La Taille, C; Fayard, Louis; Fournier, D; González, J; Hrisoho, A T; Jacquier, Y; Merkel, B; Nikolic, I A; Noppe, J M; Parrour, G; Pétroff, P; Puzo, P; Richer, J P; Schaffer, A C; Seguin-Moreau, N; Serin, L; Tisserand, V; Veillet, J J; Vichou, I; Canton, B; David, J; Genat, J F; Imbault, D; Le Dortz, O; Savoy-Navarro, Aurore; Schwemling, P; Eek, L O; Lund-Jensen, B; Söderqvist, J; Astbury, Alan; Keeler, Richard K; Lefebvre, M; Robertson, S; White, J


    This paper describes the construction of an integrated preshower within the RD3 liquid argon accordion calorimeter. It has a stereo view which enables the measurement of two transverse coordinates. The prototype was tested at CERN with electrons, photons and muons to validate its capability to work at LHC ( Energy resolution, impact point resolution, angular resolution, $\\pi^o$/$\\gamma$ rejection ).

  18. Low energy (e,2e) ionization of Argon in the equal energy sharing geometry

    CERN Document Server

    Mazevet, S; Langlois, J M; Tweed, R J; Robaux, O; Tannous, C; Fakhreddine, K


    Quantum Defect theory is a well established theoretical concept in modern spectroscopy. We show that this approach is useful in electron impact ionization problems where state of the art theoretical methods are presently restricted mostly to simple atomic targets. For the well documented Argon ionization case in equal energy sharing geometry the approach suggested leads to significant improvements compared to previous calculations.

  19. Removal of Pendant Groups of Vinyl Polymers by Argon Plasma Treatment

    NARCIS (Netherlands)

    Groenewoud, L.M.H.; Terlingen, J.G.A.; Engbers, G.H.M.; Feijen, J.


    Poly(acrylic acid) (PAAc) and poly(vinyl chloride) (PVC) were treated with an argon plasma to create unsaturated bonds at the surface. By use of X-ray photoelectron spectroscopy and Fourier transform infrared measurements, it was shown that the pendant groups of these polymers are removed by the arg

  20. Effect of Low Electric Fields on Alpha Scintillation Light Yield in Liquid Argon

    CERN Document Server

    Agnes, P; Alexander, T; Alton, A K; Asner, D M; Back, H O; Baldin, B; Biery, K; Bocci, V; Bonfini, G; Bonivento, W; Bossa, M; Bottino, B; Brigatti, A; Brodsky, J; Budano, F; Bussino, S; Cadeddu, M; Cadoni, M; Calaprice, F; Canci, N; Candela, A; Caravati, M; Cariello, M; Carlini, M; Catalanotti, S; Cavalcante, P; Chepurnov, A; Cicalò, C; Cocco, A G; Covone, G; D'Angelo, D; D'Incecco, M; Davini, S; De Cecco, S; De Deo, M; De Vincenzi, M; Derbin, A; Devoto, A; Di Eusanio, F; Di Pietro, G; Dionisi, C; Edkins, E; Empl, A; Fan, A; Fiorillo, G; Fomenko, K; Forster, G; Franco, D; Gabriele, F; Galbiati, C; Giagu, S; Giganti, C; Giovanetti, G K; Goretti, A M; Granato, F; Gromov, M; Guan, M; Guardincerri, Y; Hackett, B R; Herner, K; Hughes, D; Humble, P; Hungerford, E V; Ianni, A; James, I; Johnson, T N; Jollet, C; Keeter, K; Kendziora, C L; Koh, G; Korablev, D; Korga, G; Kubankin, A; Li, X; Lissia, M; Loer, B; Lombardi, P; Longo, G; Ma, Y; Machulin, I N; Mandarano, A; Mari, S M; Maricic, J; Marini, L; Martoff, C J; Meregaglia, A; Meyers, P D; Milincic, R; Miller, J D; Montanari, D; Monte, A; Mount, B J; Muratova, V N; Musico, P; Napolitano, J; Agasson, A Navrer; Odrowski, S; Oleinik, A; Orsini, M; Ortica, F; Pagani, L; Pallavicini, M; Pantic, E; Parmeggiano, S; Pelczar, K; Pelliccia, N; Pocar, A; Pordes, S; Pugachev, D A; Qian, H; Randle, K; Ranucci, G; Razeti, M; Razeto, A; Reinhold, B; Renshaw, A L; Rescigno, M; Riffard, Q; Romani, A; Rossi, B; Rossi, N; Rountree, D; Sablone, D; Saggese, P; Sands, W; Savarese, C; Schlitzer, B; Segreto, E; Semenov, D A; Shields, E; Singh, P N; Skorokhvatov, M D; Smirnov, O; Sotnikov, A; Stanford, C; Suvorov, Y; Tartaglia, R; Tatarowicz, J; Testera, G; Tonazzo, A; Trinchese, P; Unzhakov, E V; Verducci, M; Vishneva, A; Vogelaar, B; Wada, M; Walker, S; Wang, H; Wang, Y; Watson, A W; Westerdale, S; Wilhelmi, J; Wojcik, M M; Xiang, X; Xiao, X; Xu, J; Yang, C; Zhong, W; Zhu, C; Zuzel, G


    Measurements were made of scintillation light yield of alpha particles from the $^{222}$Rn decay chain within the DarkSide-50 liquid argon time projection chamber. The light yield was found to increase as the applied electric field increased, with alphas in a 200 V/cm electric field exhibiting a $\\sim$2% increase in light yield compared to alphas in no field.