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Sample records for area hybrid photodiodes

  1. Crosstalk properties of the CMS HCAL hybrid photodiode

    CERN Document Server

    Cushman, P B; Pearson, N; Elias, J; Freeman, J; Green, D; Los, S; Ronzhin, A

    2003-01-01

    The requirements of large dynamic range, 40 MHz readout and 4T magnetic field of the CMS Hadronic calorimeter have led to the development of a custom Hybrid PhotoDiode (HPD). In the last 5 years many improvements have been made in cooperation with DEP B.V. Delft Electronische Producten, Roden, Netherlands. and Canberra Semiconductor N.V., Olen, Belgium. to the basic HPD concept to improve the performance. A 200-mum thick 19-channel PIN diode array with various surface treatments has been developed to ensure fast pulse behavior and low optical and capacitive crosstalk.

  2. Hybrid UV Imager Containing Face-Up AlGaN/GaN Photodiodes

    Science.gov (United States)

    Zheng, Xinyu; Pain, Bedabrata

    2005-01-01

    A proposed hybrid ultraviolet (UV) image sensor would comprise a planar membrane array of face-up AlGaN/GaN photodiodes integrated with a complementary metal oxide/semiconductor (CMOS) readout-circuit chip. Each pixel in the hybrid image sensor would contain a UV photodiode on the AlGaN/GaN membrane, metal oxide/semiconductor field-effect transistor (MOSFET) readout circuitry on the CMOS chip underneath the photodiode, and a metal via connection between the photodiode and the readout circuitry (see figure). The proposed sensor design would offer all the advantages of comparable prior CMOS active-pixel sensors and AlGaN UV detectors while overcoming some of the limitations of prior (AlGaN/sapphire)/CMOS hybrid image sensors that have been designed and fabricated according to the methodology of flip-chip integration. AlGaN is a nearly ideal UV-detector material because its bandgap is wide and adjustable and it offers the potential to attain extremely low dark current. Integration of AlGaN with CMOS is necessary because at present there are no practical means of realizing readout circuitry in the AlGaN/GaN material system, whereas the means of realizing readout circuitry in CMOS are well established. In one variant of the flip-chip approach to integration, an AlGaN chip on a sapphire substrate is inverted (flipped) and then bump-bonded to a CMOS readout circuit chip; this variant results in poor quantum efficiency. In another variant of the flip-chip approach, an AlGaN chip on a crystalline AlN substrate would be bonded to a CMOS readout circuit chip; this variant is expected to result in narrow spectral response, which would be undesirable in many applications. Two other major disadvantages of flip-chip integration are large pixel size (a consequence of the need to devote sufficient area to each bump bond) and severe restriction on the photodetector structure. The membrane array of AlGaN/GaN photodiodes and the CMOS readout circuit for the proposed image sensor would

  3. A liquid-helium cooled large-area silicon PIN photodiode X-ray detector

    International Nuclear Information System (INIS)

    An X-ray detector using a liquid-helium cooled large-area silicon PIN photodiode has been developed along with a tailor-made charge sensitive preamplifier whose first-stage JFET has been cooled. The operating temperature of the JFET has been varied separately and optimized. The X- and γ-ray energy spectra for an 241Am source have been measured with the photodiode operated at 13 K. An energy resolution of 1.60 keV (FWHM) has been obtained for 60-keV γ rays and 1.30 keV (FWHM) for the pulser. The energy threshold could be set as low as 3 keV. It has been shown that a silicon PIN photodiode serves as a low-cost excellent X-ray detector which covers a large area at 13 K. (orig.)

  4. On the use of single large-area photodiodes in scintillation counters

    International Nuclear Information System (INIS)

    The compilation of this review was originally intended to assess the possibility of using photodiode-based scintillation counters in fluorescence EXAFS (or FLEXAFS) systems as a low-cost alternative to photomultiplier-based counters. The X-ray energies encountered in FLEXAFS experiments range from a few keV to a few tens of keV, and detectors are required to have some energy resolution and/or high count-rate capability in order to optimize the quality of data collected. The results presented in the reviewed literature imply strongly that photodiodes do not compete successfully with photomultipliers in scintillation counting systems for X-ray energies below the order of 100keV, at least at the present stage of photodiode technology. Nevertheless it is likely that there are other applications requiring X-ray detectors for which a photodiode-based scintillation counter may be perfectly adequate, and it is therefore felt that such a review is still useful. In addition, large-area single photodiodes have much to offer as X-ray detectors in their own right, and several of the considerations regarding their use in scintillation counters are highly relevant to this application. (author)

  5. Problems and solutions in high-rate multichannel hybrid photodiode design The CMS experience

    CERN Document Server

    Cushman, P B

    2002-01-01

    The unique conditions of the CMS experiment (4 T magnetic field, restricted access, high neutron radiation, and 25-ns bunch-crossings) necessitated the development of a new type of high-rate multichannel hybrid photodiode for the tile/fiber hadronic calorimeter. New complexities arose in the push toward high-rate operation, necessitating design changes in the diode structure and surface treatment. The product is now capable of high-rate operation with low crosstalk and leakage current. Lifetime studies of high-voltage behavior, total charge, and irradiation have shown that the tubes will survive the ten years of CMS running with only a few percent change in gain and manageable leakage current rise. (13 refs).

  6. Behaviour of large-area avalanche photodiodes under intense magnetic fields for VUV- visible- and X-ray photon detection

    International Nuclear Information System (INIS)

    The behaviour of large-area avalanche photodiodes for X-rays, visible and vacuum-ultra-violet (VUV) light detection in magnetic fields up to 5 T is described. For X-rays and visible light detection, the photodiode pulse amplitude and energy resolution were unaffected from 0 to 5 T, demonstrating the insensitivity of this type of detector to strong magnetic fields. For VUV light detection, however, the photodiode relative pulse amplitude decreases with increasing magnetic field intensity reaching a reduction of about 24% at 5 T, and the energy resolution degrades noticeably with increasing magnetic field

  7. Uniformity Measurements Across the Area of the CMS ECAL Avalanche Photodiodes

    CERN Document Server

    Godinovic, Nikola; Soric, Ivica; Antunovic, Zeljko; Dzelalija, Mile; Deiters, Konrad; Ingram, Quentin; Renker, Dieter; Musienko, Yuri

    2004-01-01

    The photodetectors which will read out the scintillation light generated in the lead tungstate crystals in the barrel part of the CMS electromagnetic calorimeter are avalanche photodiodes (APDs). Scanning the APD's active area with a collimated light spot, the spatial uniformity of their quantum efficiency and gain has been measured at four different operating gains. Details of the APD surface structure are examined by scanning with a fine light spot. These details help to explain the difference between the bias voltage for a given gain when the full APD area is illuminated and when only the central part is illuminated.

  8. ZnO(N)-Spiro-MeOTAD hybrid photodiode: an efficient self-powered fast-response UV (visible) photosensor

    Science.gov (United States)

    Game, Onkar; Singh, Upendra; Kumari, Tanya; Banpurkar, Arun; Ogale, Satishchandra

    2013-12-01

    Organic-inorganic hybrid photo-detectors with a self-sufficient mode of operation represent a research area of great current interest. In most efficient photodetectors and optoelectronic devices compound semiconductors containing toxic elements such as Cd, As, Te, S, Se etc. are used and these are also expensive. Hence there is also a rapidly growing interest in replacing these with environmentally friendly and earth-abundant materials. Herein, we report a facile solution-processed fabrication of a self-powered organic-inorganic hybrid photodetector using n-type oriented ZnO nanorods and p-type Spiro-MeOTAD semiconductor. ZnO is eco-friendly and earth-abundant, and Spiro-MeOTAD is non-hazardous. We show that the latter has far less toxicity than the toxic elements stated above. This visible blind UV photodetector shows high sensitivity (102) and a UV/visible rejection ratio of 300. It also exhibits fast response times of τrise ~ 200 μs and τfall ~ 950 μs. Importantly, with a small modification of nitrogen incorporation in ZnO one can also realize a highly-sensitive self-powered visible light photodetector with at least 1000% (or higher) improvements in quality factors (photocurrent/sensitivity/response time) as compared to previously reported organic-inorganic hybrid photo-detectors based on metal-chalcogenides (CdS-PANI or CuInSe2-P3HT). Interestingly, the broadband sensitivity of such N:ZnO-Spiro-MeOTAD photodiode enables sensing of low intensity (~28 μW cm-2) ambient white light with a high photocurrent density of 120 nA cm-2 making it an efficient ambient white light detector.Organic-inorganic hybrid photo-detectors with a self-sufficient mode of operation represent a research area of great current interest. In most efficient photodetectors and optoelectronic devices compound semiconductors containing toxic elements such as Cd, As, Te, S, Se etc. are used and these are also expensive. Hence there is also a rapidly growing interest in replacing these with

  9. Performance of a Large Area Avalanche Photodiode in a Liquid Xenon Ionization and Scintillation Chamber

    CERN Document Server

    Ni, K; Day, D; Giboni, K L; Lopes, J A M; Majewski, P; Yamashita, M

    2005-01-01

    Scintillation light produced in liquid xenon (LXe) by alpha particles, electrons and gamma-rays was detected with a large area avalanche photodiode (LAAPD) immersed in the liquid. The alpha scintillation yield was measured as a function of applied electric field. We estimate the quantum efficiency of the LAAPD to be 45%. The best energy resolution from the light measurement at zero electric field is 7.5%(sigma) for 976 keV internal conversion electrons from Bi-207 and 2.6%(sigma) for 5.5 MeV alpha particles from Am-241. The detector used for these measurements was also operated as a gridded ionization chamber to measure the charge yield. We confirm that using a LAAPD in LXe does not introduce impurities which inhibit the drifting of free electrons.

  10. Response of large area avalanche photodiodes to low energy x rays

    Energy Technology Data Exchange (ETDEWEB)

    Gentile, T. R. [Stop 8461, National Institute of Standards and Technology, Gaithersburg, Maryland 20899 (United States); Bales, M. [University of Michigan, Ann Arbor, Michigan 48104 (United States); Arp, U. [Stop 8410, National Institute of Standards and Technology, Gaithersburg, Maryland 20899 (United States); Dong, B. [Sotera Defense Solutions, Inc., Brookhaven National Laboratory, Upton, New York 11973 (United States); Farrell, R. [RMD Inc., Watertown, Massachusetts 02472 (United States)

    2012-05-15

    For an experiment to study neutron radiative beta-decay, we operated large area avalanche photodiodes (APDs) near liquid nitrogen temperature to detect x rays with energies between 0.2 keV and 20 keV. Whereas there are numerous reports of x ray spectrometry using APDs at energies above 1 keV, operation near liquid nitrogen temperature allowed us to reach a nominal threshold of 0.1 keV. However, due to the short penetration depth of x rays below 1 keV, the pulse height spectrum of the APD become complex. We studied the response using monochromatic x ray beams and employed phenomenological fits of the pulse height spectrum to model the measurement of a continuum spectrum from a synchrotron. In addition, the measured pulse height spectrum was modelled using a profile for the variation in efficiency of collection of photoelectrons with depth into the APD. The best results are obtained with the collection efficiency model.

  11. Low-Noise Large-Area Photoreceivers with Low Capacitance Photodiodes

    Science.gov (United States)

    Joshi, Abhay M. (Inventor); Datta, Shubhashish (Inventor)

    2013-01-01

    A quad photoreceiver includes a low capacitance quad InGaAs p-i-n photodiode structure formed on an InP (100) substrate. The photodiode includes a substrate providing a buffer layer having a metal contact on its bottom portion serving as a common cathode for receiving a bias voltage, and successive layers deposited on its top portion, the first layer being drift layer, the second being an absorption layer, the third being a cap layer divided into four quarter pie shaped sections spaced apart, with metal contacts being deposited on outermost top portions of each section to provide output terminals, the top portions being active regions for detecting light. Four transimpedance amplifiers have input terminals electrically connected to individual output terminals of each p-i-n photodiode.

  12. Hybrid organic-inorganic composites for applications in Vis-NIR photodiodes

    Science.gov (United States)

    Luszczynska, Beata; Szymanski, Marek Z.

    2015-10-01

    Active layers of bulk heterojunction are extensively studied because of their great potential for application in low-cost optoelectronic devices like photovoiltaic cells and photodiodes. The performance of such devices is strongly influenced by the formed nanostructures which determine the transport ability of the organic composite. We investigated the charge carrier transport properties of two organic composites: poly(3-hexyothiophene) (P3HT) with (6,6)-phenyl-C60-butyric acid methyl ester (60PCBM)and poly(triarylamine) (PTTA) blended with 60PCBM. The optimised organic blend was used as a matrix material for Cu-In-Se nanocrystals. Adding Cu-In-Se nanocrystals to a P3HT/60PCBM bulk heterojunction leads to a significant improvement of the maximum external quantum efficiency of the investigated system from 48% to 70% (at wavelength 520 nm).

  13. Hybrid AlGaN-SiC Avalanche Photodiode for Deep-UV Photon Detection

    Science.gov (United States)

    Aslam, Shahid; Herrero, Federico A.; Sigwarth, John; Goldsman, Neil; Akturk, Akin

    2010-01-01

    The proposed device is capable of counting ultraviolet (UV) photons, is compatible for inclusion into space instruments, and has applications as deep- UV detectors for calibration systems, curing systems, and crack detection. The device is based on a Separate Absorption and Charge Multiplication (SACM) structure. It is based on aluminum gallium nitride (AlGaN) absorber on a silicon carbide APD (avalanche photodiode). The AlGaN layer absorbs incident UV photons and injects photogenerated carriers into an underlying SiC APD that is operated in Geiger mode and provides current multiplication via avalanche breakdown. The solid-state detector is capable of sensing 100-to-365-nanometer wavelength radiation at a flux level as low as 6 photons/pixel/s. Advantages include, visible-light blindness, operation in harsh environments (e.g., high temperatures), deep-UV detection response, high gain, and Geiger mode operation at low voltage. Furthermore, the device can also be designed in array formats, e.g., linear arrays or 2D arrays (micropixels inside a superpixel).

  14. Energy resolution and light yield non-proportionality of ZnSe Te scintillator studied by large area avalanche photodiodes and photomultipliers

    CERN Document Server

    Balcerzyk, M; Moszynski, M; Kapusta, M; Szawlowski, M

    2002-01-01

    The ZnSe : Te scintillator has been studied by means of a photomultiplier with an extended bialkali photocathode, a large area avalanche photodiode (LAAPD) and a PIN photodiode. The light output was determined to be 28 300+-1700 photons/MeV. Results indicate good proportionality for light output versus gamma-ray energy. Measurements of the 662 keV gamma-ray energy spectrum recorded using a LAAPD resulted in an energy resolution of 5.4+-0.3%. Based on these results, an intrinsic energy resolution of 3.3+-0.7% has been calculated.

  15. An evaluation of the new compact hybrid photodiodes R7110U-07/40 from Hamamatsu in high-speed light detection mode

    International Nuclear Information System (INIS)

    The main parameters of hybrid photodiodes (HPD) are constantly improving. In the new 20 mm diameter HPDs from Hamamatsu an avalanche diode (AD) serves as anode. Due to high gain of the used ADs the HPDs show a total gain of 6-8x104 at nominal HV. This allows one to use HPDs with very fast low-noise voltage amplifiers and to detect fast pulses (down to the single photoelectron level) with very good amplitude resolution. Of special interest are HPDs of the type R7110U-40 with GaAsP photocathode which provide a quantum efficiency of ∼40% in maximum at ∼500 nm. Results on the evaluation of the above-mentioned HPDs and their comparison with HPDs from INTEVAC will be presented

  16. Readout of a LaCl sub 3 (Ce sup 3 sup +) scintillation crystal with a large area avalanche photodiode

    CERN Document Server

    Allier, C P; Dorenbos, P; Hollander, R W; Eijk, C W E; Kraemer, K W; Güdel, H U

    2002-01-01

    A high-resolution gamma-ray detector consisting of an 8 mm diameter and 5 mm thick LaCl sub 3 (Ce sup 3 sup +) scintillation crystal coupled to a 16 mm diameter APD from Advanced Photonix Inc is presented. The energy resolution R obtained at 662 keV is about 3.7% (full-width at half maximum). The low intrinsic resolution of about 2%, the high light yield of the crystal (46 000+-5000 photons per MeV) and the high quantum efficiency of the avalanche photodiode make this gamma-ray detector an excellent choice for applications were a high energy resolution is required.

  17. High Efficiency UV Photodiodes fabricated on p-type Substrate

    NARCIS (Netherlands)

    Ramachandra Rao, P.; Milosavljevic, S.; Kroth, U.; Laubis, C.; Nihtianov, S.

    2014-01-01

    Newly developed “pure-boron” photodiodes, with high sensitivity and stability in the whole ultraviolet range (UV), are described. The main purpose of this work is to create and characterize a large-area UV photodiode, representing a structure of a pixel in a backside illuminated CMOS image sensor, f

  18. Gallium-based avalanche photodiode optical crosstalk

    Science.gov (United States)

    Blazej, Josef; Prochazka, Ivan; Hamal, Karel; Sopko, Bruno; Chren, Dominik

    2006-11-01

    Solid-state single photon detectors based on avalanche photodiode are getting more attention in various areas of applied physics: optical sensors, quantum key distribution, optical ranging and Lidar, time-resolved spectroscopy, X-ray laser diagnostics, and turbid media imaging. Avalanche photodiodes specifically designed for single photon counting semiconductor avalanche structures have been developed on the basis of various materials: Si, Ge, GaP, GaAsP, and InGaP/InGaAs at the Czech Technical University in Prague during the last 20 years. They have been tailored for numerous applications. Trends in demand are focused on detection array construction recently. Even extremely small arrays containing a few cells are of great importance for users. Electrical crosstalk between individual gating and quenching circuits and optical crosstalk between individual detecting cells are serious limitation for array design and performance. Optical crosstalk is caused by the parasitic light emission of the avalanche which accompanies the photon detection process. We have studied in detail the optical emission of the avalanche photon counting structure in the silicon- and gallium-based photodiodes. The timing properties and spectral distribution of the emitted light have been measured for different operating conditions to quantify optical crosstalk. We conclude that optical crosstalk is an inherent property of avalanche photodiode operated in Geiger mode. The only way to minimize optical crosstalk in avalanche photodiode array is to build active quenching circuit with minimum response time.

  19. A silicon drift photodiode

    Energy Technology Data Exchange (ETDEWEB)

    Avset, B.S.; Evensen, L.; Ellison, J.A.; Hall, G.; Roe, S.; Wheadon, R.; Hansen, T.E.

    1989-02-01

    A low capacitance photodiode based on the principle of the solid state drift chamber has been constructed and tested. The device is based on a cellular design with an anode at the centre of each of five cells allowing electrons liberated by ionisation to drift up to 1mm to the read out strip. Results on the performance of the detector, including leakage current, capacitance and drift properties, are presented and compared with simulations.

  20. Inkjet-printed organic photodiodes

    International Nuclear Information System (INIS)

    Inkjet-printed organic photodiodes are reported, which eliminate the need for photodiode patterning as compared to other solution-based fabrication techniques. Both interlayer and bulk heterojunction ink formulations are optimized to fabricate diodes with low dark currents of 2 μA/cm2 and high external quantum efficiencies of 68.5% at - 5 V reverse bias. The current-voltage characteristics of the printed devices are competitive with photodiodes fabricated with established solution based technologies, such as spray-coating or blading. A comparison of photodiodes fabricated with a variety of solution processes showed that dark current densities are not related to microscale bulk heterojunction roughness.

  1. Characterization and identification of the chemical constituents from tartary buckwheat (Fagopyrum tataricum Gaertn) by high performance liquid chromatography/photodiode array detector/linear ion trap FTICR hybrid mass spectrometry.

    Science.gov (United States)

    Ren, Qiang; Wu, Caisheng; Ren, Yan; Zhang, Jinlan

    2013-02-15

    In recent years tartary buckwheat has become popular healthful food due to its antioxidant, antidiabetic and antitumor activities. However, its chemical constituents have not yet been fully characterized and identified. In this paper, a novel high performance liquid chromatography coupled with photodiode array detector and linear ion trap FTICR hybrid mass spectrometry (HPLC-PDA/LTQ-FTICRMS) method was established to characterize and identify a total of 36 compounds by a single run. The retention time, maximum UV absorption wavelength, accurate mass weight and characteristic fragment ions were collected on line. To confirm the structures, 11 compounds were isolated and identified by MS and NMR experiments. 1, 3, 6, 6'-tetra-feruloyl sucrose named taroside was a new phenlypropanoid glycoside, together with 3, 6-di-p-coumaroyl-1, 6'-di-feruloyl sucrose, 1, 6, 6'-tri-feruloyl-3-p-coumaroyl sucrose, N-trans-feruloyltyramine and quercetin-3-O-[β-D-xyloxyl-(1→2)-α-L-rhamnoside] were isolated for the first time from the Fagopyrum species. The research enriched the chemical information of tartary buckwheat.

  2. Fast silicon drift photodiodes free from bias connections on the light entering side

    CERN Document Server

    Castoldi, A; Gatti, E; Holl, P; Rehak, P

    2000-01-01

    A new type of silicon drift photodiode intended to be coupled to large area scintillators is described. The diodes have a relatively large area (1 cm sup 2) and a short maximal drift time (300 ns). They operate without requiring any external electrical connection at the side of the photodiode coupled to the scintillating crystal. These new photodiodes have almost identical ring structures on both sides with individual rings being at linearly increasing potentials providing the required high electric drift field. A new feature of the presented photodiodes is a small modification of the electrode structure near the signal collecting anode. It allows a full depletion of the photodiode and the highest drift field. Advantages and drawbacks of this kind of photodiodes are described.

  3. The research of controller area network on hybrid electrical vehicle

    Institute of Scientific and Technical Information of China (English)

    Wu Hongxing; Song Liwei; Kou Baoquan; Cheng Shukang

    2006-01-01

    It is of increasing importance to design and implement vehicle networks for transferring information between electrical control units on Hybrid Electrical Vehicle (HEV). This paper presents a scheme of using Controller Area Network (CAN) technology to realize communication and datasharing between the electrical units on the HEV. The principle and communication protocol of Electrical Control Units (ECU) CAN node are introduced. By considering different sensitivity of the devices to the latency of data transportation, a new design procedure is proposed for the purpose of simplifying network codes and wiring harness, reducing assembly space and weight, improving assembly efficiency, and enhancing fault-diagnose in auto networks.

  4. Contribution of generation-recombination processes at inner interface of MBE-grown Hg1-xCdxTe heterostucture to dark current of small active area photodiode

    Science.gov (United States)

    Chekanova, Galina V.; Drugova, Albina A.; Kholodnov, Viacheslav; Nikitin, Mikhail S.

    2009-09-01

    Multilayer heterostructures of Hg1-xCdxTe alloy grown by Molecular Beam Epitaxy (MBE) on large size alternative substrates Si, GaAs and Ge are considered as one of productive alternative materials for issue of large format photovoltaic (PV) infrared (IR) focal plane arrays. However reaching of ultimate performance of small-pitched photodiode's (PD) covering spectral range from 8 to 12 μm depends on electronic properties of both individual layers and heterostructure interfaces. Due to small thickness of heterostructure layers, interfaces are located close to active regions of p-n junction and hence generation-recombination processes at interfaces will contribute to value of current flowing through junction. As usual measured dark current value of small-sized PD is higher than estimated from calculation and cannot be explained by discrepancy between real and estimated charge carriers concentration in absorption layers where p-n junction is formed. Objective of the present work was to calculate the contribution of recombination of charge carriers via electronic states on nearby inner interface to dark current of Hg1-xCdxTe LWIR PD (λco equals to 9.5-10.3 μm at Top=77 K) and its variation with absorption layer parameters and compare it to measured data on small-pitched arrays. We have concluded previously that at high recombination rate dark current can grow in orders of value.

  5. High quantum efficiency annular backside silicon photodiodes for reflectance pulse oximetry in wearable wireless body sensors

    DEFF Research Database (Denmark)

    Duun, Sune Bro; Haahr, Rasmus Grønbek; Hansen, Ole;

    2010-01-01

    The development of annular photodiodes for use in a reflectance pulse oximetry sensor is presented. Wearable and wireless body sensor systems for long-term monitoring require sensors that minimize power consumption. We have fabricated large area 2D ring-shaped silicon photodiodes optimized...

  6. Silicon Geiger mode avalanche photodiodes

    Institute of Scientific and Technical Information of China (English)

    M. Mazzillo; S. Billotta; G. Bonanno; A. Campisi; L. Cosentino; P. Finocchiaro; F. Musumeci; S.Privitera; S. Tudisco; G. Condorelli; D. Sanfilippo; G. Fallica; E. Sciacca; S. Aurite; S. Lombardo; E. Rlmini; M. Belluso

    2007-01-01

    In this letter we present the results regarding the electrical and optical characterization of Geiger mode silicon avalanche photodiodes (GMAP) fabricated by silicon standard planar technology. Low dark count rates, negligible afterpulsing effects,good timing resolution and high quantum detection efficiency in all the visible range have been measured. The very good electro-optical performances of our photodiodes make them attractive for the fabrication of arrays with a large number of GMAP to be used both in the commercial and the scientific fields, as telecommunications and nuclear medical imaging.

  7. Small Signal Circuit Model of Double Photodiodes

    Institute of Scientific and Technical Information of China (English)

    HAN Jian-zhong; Ni Guo-qiang; MAO Lu-hong

    2004-01-01

    The transmission delay of photogenerated carriers in a CMOS-process-compatible double photodiode (DPD) is analyzed by using device simulation. The DPD small signal equivalent circuit model which includes transmission delay of photogenerated carriers is given. From analysis on the frequency domain of the circuit model the device has two poles. One has the relationship with junction capacitance and the DPD's load,the other with the depth and the doping concentration of the N-well in the DPD. Different depth of the Nwell and different area of the DPDs with bandwidth were compared. The analysis results are important to design the high speed DPDs.

  8. Hybrid methodology for hourly global radiation forecasting in Mediterranean area

    CERN Document Server

    Voyant, Cyril; Paoli, Christophe; Nivet, Marie Laure

    2012-01-01

    The renewable energies prediction and particularly global radiation forecasting is a challenge studied by a growing number of research teams. This paper proposes an original technique to model the insolation time series based on combining Artificial Neural Network (ANN) and Auto-Regressive and Moving Average (ARMA) model. While ANN by its non-linear nature is effective to predict cloudy days, ARMA techniques are more dedicated to sunny days without cloud occurrences. Thus, three hybrids models are suggested: the first proposes simply to use ARMA for 6 months in spring and summer and to use an optimized ANN for the other part of the year; the second model is equivalent to the first but with a seasonal learning; the last model depends on the error occurred the previous hour. These models were used to forecast the hourly global radiation for five places in Mediterranean area. The forecasting performance was compared among several models: the 3 above mentioned models, the best ANN and ARMA for each location. In t...

  9. Symmetric two-coordinate photodiode

    Directory of Open Access Journals (Sweden)

    Dobrovolskiy Yu. G.

    2008-12-01

    Full Text Available The two-coordinate photodiode is developed and explored on the longitudinal photoeffect, which allows to get the coordinate descriptions symmetric on the steepness and longitudinal resistance great exactness. It was shown, that the best type of the coordinate description is observed in the case of scanning by the optical probe on the central part of the photosensitive element. The ways of improvement of steepness and linear of its coordinate description were analyzed.

  10. Novel vertical silicon photodiodes based on salicided polysilicon trenched contacts

    International Nuclear Information System (INIS)

    The classical concept of silicon photodiodes comprises of a planar design characterized by heavily doped emitters. Such geometry has low collection efficiency of the photons absorbed close to the surface. An alternative, promising, approach is to use a vertical design. Nevertheless, realization of such design is technologically challenged, hence hardly explored. Herein, a novel type of silicon photodiodes, based on salicided polysilicon trenched contacts, is presented. These contacts can be prepared up to 10 μm in depth, without showing any leakage current associated with the increase in the contact area. Consequently, the trenched photodiodes revealed better performance than no-trench photodiodes. A simple two dimensional model was developed, allowing to estimate the conditions under which a vertical design has the potential to have better performance than that of a planar design. At large, the deeper the trench is, the better is the vertical design relative to the planar (up to 10 μm for silicon). The vertical design is more advantageous for materials characterized by short diffusion lengths of the carriers. Salicided polysilicon trenched contacts open new opportunities for the design of solar cells and image sensors. For example, these contacts may passivate high contact area buried contacts, by virtue of the conformity of polysilicon interlayer, thus lowering the via resistance induced recombination enhancement effect

  11. Novel vertical silicon photodiodes based on salicided polysilicon trenched contacts

    Energy Technology Data Exchange (ETDEWEB)

    Kaminski, Yelena [Department of Chemical Engineering, Technion, Haifa (Israel); TowerJazz Ltd. Migdal Haemek (Israel); Shauly, Eitan [TowerJazz Ltd. Migdal Haemek (Israel); Paz, Yaron, E-mail: paz@tx.technion.ac.il [Department of Chemical Engineering, Technion, Haifa (Israel)

    2015-12-07

    The classical concept of silicon photodiodes comprises of a planar design characterized by heavily doped emitters. Such geometry has low collection efficiency of the photons absorbed close to the surface. An alternative, promising, approach is to use a vertical design. Nevertheless, realization of such design is technologically challenged, hence hardly explored. Herein, a novel type of silicon photodiodes, based on salicided polysilicon trenched contacts, is presented. These contacts can be prepared up to 10 μm in depth, without showing any leakage current associated with the increase in the contact area. Consequently, the trenched photodiodes revealed better performance than no-trench photodiodes. A simple two dimensional model was developed, allowing to estimate the conditions under which a vertical design has the potential to have better performance than that of a planar design. At large, the deeper the trench is, the better is the vertical design relative to the planar (up to 10 μm for silicon). The vertical design is more advantageous for materials characterized by short diffusion lengths of the carriers. Salicided polysilicon trenched contacts open new opportunities for the design of solar cells and image sensors. For example, these contacts may passivate high contact area buried contacts, by virtue of the conformity of polysilicon interlayer, thus lowering the via resistance induced recombination enhancement effect.

  12. Utilization of photodiodes for ionizing radiation dosimetry

    International Nuclear Information System (INIS)

    The behaviour of silicon photodiodes as detector, for gama and x-ray dosimetry is discussed. Measurements were realized with photodiodes operating in the photovoltaic mode, the current produzed was detected in the eletrometer constructed in the DEN/UFPE. The results obtained showed that the photodiode response is linear with the dose and that variation of 40 degrees in the incidence angule of the radiation caused a variation of 5% in the dose determination. (author)

  13. Development of high gain photodiode array based on commercial CMOS process

    International Nuclear Information System (INIS)

    Developing photodiodes in commercial CMOS process and integrating it with readout electronics without any process modification involves formidable challenges. Due to low resistivity of the wafer used in commercial CMOS process, the junction capacitance per area of the PN junction is quite large thereby limiting the size of the active area of the photodiode leading to degradation in high speed response. On the contrary, the sensitivity and quantum efficiency of the optical detector tends to improve with increase in active area of the detector. The major challenge in designing high gain photodiode in sub micron CMOS technology is to avoid the premature perimeter edge breakdown or the soft breakdown. This paper reports two different design approaches of high gain photodiode arrays in commercial 0.35 um CMOS technology and HV CMOS process

  14. Intermodal parametric gain of degenerate four wave mixing in large mode area hybrid photonic crystal fibers

    OpenAIRE

    Petersen, Sidsel Rübner; Lægsgaard, Jesper; Alkeskjold, Thomas Tanggaard

    2013-01-01

    Intermodal degenerate four wave mixing (FWM) is investigated numerically in large mode area hybrid photonic crystal fibers. The dispersion is controlled independently of core size, and thus allows for power scaling of the FWM process.

  15. Intermodal parametric gain of degenerate four wave mixing in large mode area hybrid photonic crystal fibers

    DEFF Research Database (Denmark)

    Petersen, Sidsel Rübner; Lægsgaard, Jesper; Alkeskjold, Thomas Tanggaard

    2013-01-01

    Intermodal degenerate four wave mixing (FWM) is investigated numerically in large mode area hybrid photonic crystal fibers. The dispersion is controlled independently of core size, and thus allows for power scaling of the FWM process.......Intermodal degenerate four wave mixing (FWM) is investigated numerically in large mode area hybrid photonic crystal fibers. The dispersion is controlled independently of core size, and thus allows for power scaling of the FWM process....

  16. Photodiodes based on fullerene semiconductor

    Energy Technology Data Exchange (ETDEWEB)

    Voz, C. [Micro and Nano Technology Group (MNT), Departament Enginyeria Electronica, Universitat Politecnica Catalunya, c/ Jordi Girona 1-3 Campus Nord C4, 08034-Barcelona (Spain)], E-mail: cvoz@eel.upc.edu; Puigdollers, J. [Micro and Nano Technology Group (MNT), Departament Enginyeria Electronica, Universitat Politecnica Catalunya, c/ Jordi Girona 1-3 Campus Nord C4, 08034-Barcelona (Spain); Cheylan, S. [ICFO- Institut de Ciencies Fotoniques, Mediterranean Technology Park, Av. del Canal Olimpic s/n, 08860-Castelldefels (Spain); Fonrodona, M.; Stella, M.; Andreu, J. [Solar Energy Group, Departament Fisica Aplicada i Optica, Universitat de Barcelona, Avda. Diagonal 647, 08028-Barcelona (Spain); Alcubilla, R. [Micro and Nano Technology Group (MNT), Departament Enginyeria Electronica, Universitat Politecnica Catalunya, c/ Jordi Girona 1-3 Campus Nord C4, 08034-Barcelona (Spain)

    2007-07-16

    Fullerene thin films have been deposited by thermal evaporation on glass substrates at room temperature. A comprehensive optical characterization was performed, including low-level optical absorption measured by photothermal deflection spectroscopy. The optical absorption spectrum reveals a direct bandgap of 2.3 eV and absorption bands at 2.8 and 3.6 eV, which are related to the creation of charge-transfer excitons. Various photodiodes on indium-tin-oxide coated glass substrates were also fabricated, using different metallic contacts in order to compare their respective electrical characteristics. The influence of a poly(3,4-ethylenedioxythiophene) poly(styrenesulfonate) buffer layer between the indium-tin-oxide electrode and the fullerene semiconductor is also demonstrated. These results are discussed in terms of the workfunction for each electrode. Finally, the behaviour of the external quantum efficiency is analyzed for the whole wavelength spectrum.

  17. A protected area influences genotype-specific survival and the structure of a Canis hybrid zone.

    Science.gov (United States)

    Benson, John F; Patterson, Brent R; Mahoney, Peter J

    2014-02-01

    It is widely recognized that protected areas can strongly influence ecological systems and that hybridization is an important conservation issue. However, previous studies have not explicitly considered the influence of protected areas on hybridization dynamics. Eastern wolves are a species of special concern and their distribution is largely restricted to a protected population in Algonquin Provincial Park (APP), Ontario, Canada, where they are the numerically dominant canid. We studied intrinsic and extrinsic factors influencing survival and cause-specific mortality of hybrid and parental canids in the three-species hybrid zone between eastern wolves, eastern coyotes, and gray wolves in and adjacent to APP. Mortality risk for eastern wolves in areas adjacent to APP was significantly higher than for other sympatric Canis types outside of APP, and for eastern wolves and other canids within APP. Outside of APP, the annual mortality rate of all canids by harvest (24%) was higher than for other causes of death (4-7%). Furthermore, eastern wolves (hazard ratio = 3.5) and nonresidents (transients and dispersing animals, hazard ratio = 2.7) were more likely to die from harvest relative to other Canis types and residents, respectively. Thus, eastern wolves dispersing from APP were especially vulnerable to harvest mortality. For residents, eastern wolf survival was more negatively influenced by increased road density than for other Canis types, further highlighting the sensitivity of eastern wolves to human disturbance. A cycle of dispersal from APP followed by high rates of mortality and hybridization appears to maintain eastern wolves at low density adjacent to APP, limiting the potential for expansion beyond the protected area. However, high survival and numerical dominance of eastern wolves within APP suggest that protected areas can allow rare hybridizing species to persist even if their demographic performance is compromised and barriers to hybridization are largely

  18. Response of commercial photodiodes for application in alpha spectrometry

    International Nuclear Information System (INIS)

    The use of semiconductor detector for ionizing radiations spectrometry and dosimetry has been growing in the last years due to its characteristics of fast response, good efficiency for unit of volume and excellent resolution. Since the working principle of a semiconductor detector is identical to that of the semiconductor junctions of commercial electronic devices, a study was carried out on the PIN-photodiodes response, aiming at set up an alpha spectrometry system of low cost and easy acquisition. The tested components have the following characteristics: active area varying between 13.2 and 25 mm2, window of thickness equal or lower than 57 mg/cm2, depletion area with depth ranging from 10 to 300 μm and junction capacitance of 16 to 20 pF.Am-241, Cm-244, U-233 and Np-237 alpha sources produced by electrodeposition were used to evaluate the response of the devices as a function of the radiation energy. The results have shown a linear response of the photodiodes with the incident alpha particle energy. The resolution varied from 1.6% to 0.45% and the better detection efficiency found was about 7.2. The low cost of the photodiodes and the excellent results obtained at room temperature make such components very attractive for teaching purposes for environmental monitoring. (author)

  19. X-ray spectrometry with Si photodiodes

    International Nuclear Information System (INIS)

    This work envisages the development of a high resolution electromagnetic radiation spectrometry system, based on the use of low cost commercial silicon photodiodes (Siemens SFH00206 and Hamamatsu S2506-02). In order to improve the performance of these photodiodes for high resolution X-ray spectrometry, a cooling system using Peltier cells was developed to decrease the temperature of both photodiode and preamplifier's FET. The best values of the resolution for the 59.5 keV 241 Am γ-ray line, at 9 deg C, were found to be 2.10 keV and 1.82 keV for the Siemens SFH00206 and Hamamatsu S250602 photodiodes respectively. (author)

  20. Electromagnetic radiation spectrometer with Si photodiodes

    International Nuclear Information System (INIS)

    This work envisages the development of a high resolution electromagnetic radiation spectrometry system, based on the use of low cost commercial silicon photodiodes (Siemens SFH00206 and Hamamatsu S2506-02). In order to improve the performance of these photodiodes for high resolution x-ray spectrometry, a cooling system using Peltier cells was developed to decrease the temperature of both photodiode and preamplifier's FET. The best values of the resolution for the 59,5 keV 241Am γ-ray line, at 9 deg C, were found to be 2,10 keV and 1,82 keV for the Siemens SFH00206 and Hamamatsu S2506-02 photodiodes respectively. (author)

  1. Comparison of pulse height spectra on CsI(T1)/PIN photodiode radiation detector due to surface encapsulant

    Energy Technology Data Exchange (ETDEWEB)

    Kim, Han Soo; Ha, Jang Ho; Jeong, Man Hee; Kim, Young Soo; Kim, Dong Jin; Cho, Woo Jin; Choi, Hyo Jeong [Korea Atomic Energy Research Institute, Seoul (Korea, Republic of); Cho, Seung Yeon [Environmental Health Center, Yonsei University, Seoul (Korea, Republic of)

    2014-04-15

    Scintillation crystal converts the energy deposited by an X-ray or gamma ray to light. Usually this scintillation light is collected, converted to electrons and amplified by an photomultiplier tube (PMT). The PMT has the drawbacks of being bulky and requiring a high voltage (HV) to operate it. This scinitllation light can also be collected in a solid state photo-detector, such as a silicon PIN photodiode and an avanlanche photodiode. PIN photodiode, which have 10 mm X 10 mm{sup 2} active area, were fabricated with anti-reflective coating and match with CsI(Tl) scintillator. In this study, radiation reasonabilities were compared with and without surface encapsulant epoxy. Silicon PIN Photodiodes were fabricated with AR coating. To match with CsI(Tl) scintillator, surface encapsulant was applied on the PIN photodiodes. Leakage currents for all the PIN photodiodes show several nA up to 100 V. The pulse height spectra and comparison of the CsI(Tl)PIN photodiode in case of surface encapsulation on PIN photodiode will be presented at the conference.

  2. Integrating an electrically active colloidal quantum dot photodiode with a graphene phototransistor

    Science.gov (United States)

    Nikitskiy, Ivan; Goossens, Stijn; Kufer, Dominik; Lasanta, Tania; Navickaite, Gabriele; Koppens, Frank H. L.; Konstantatos, Gerasimos

    2016-06-01

    The realization of low-cost photodetectors with high sensitivity, high quantum efficiency, high gain and fast photoresponse in the visible and short-wave infrared remains one of the challenges in optoelectronics. Two classes of photodetectors that have been developed are photodiodes and phototransistors, each of them with specific drawbacks. Here we merge both types into a hybrid photodetector device by integrating a colloidal quantum dot photodiode atop a graphene phototransistor. Our hybrid detector overcomes the limitations of a phototransistor in terms of speed, quantum efficiency and linear dynamic range. We report quantum efficiencies in excess of 70%, gain of 105 and linear dynamic range of 110 dB and 3 dB bandwidth of 1.5 kHz. This constitutes a demonstration of an optoelectronically active device integrated directly atop graphene and paves the way towards a generation of flexible highly performing hybrid two-dimensional (2D)/0D optoelectronics.

  3. Large-mode-area hybrid photonic crystal fiber amplifier at 1178 nm

    DEFF Research Database (Denmark)

    Petersen, Sidsel Rübner; Chen, Mingchen; Shirakawa, Akira;

    2015-01-01

    Amplification of 1178 nm light is demonstrated in a large-mode-area single-mode ytterbium-doped hybrid photonic crystal fiber, relying on distributed spectral filtering of spontaneous emission at shorter wavelengths. An output power of 53 W is achieved with 29 dB suppression of parasitic lasing...

  4. Sustainable electricity generation by solar pv/diesel hybrid system without storage for off grids areas

    Science.gov (United States)

    Azoumah, Y.; Yamegueu, D.; Py, X.

    2012-02-01

    Access to energy is known as a key issue for poverty reduction. The electrification rate of sub Saharan countries is one of the lowest among the developing countries. However this part of the world has natural energy resources that could help raising its access to energy, then its economic development. An original "flexy energy" concept of hybrid solar pv/diesel/biofuel power plant, without battery storage, is developed in order to not only make access to energy possible for rural and peri-urban populations in Africa (by reducing the electricity generation cost) but also to make the electricity production sustainable in these areas. Some experimental results conducted on this concept prototype show that the sizing of a pv/diesel hybrid system by taking into account the solar radiation and the load/demand profile of a typical area may lead the diesel generator to operate near its optimal point (70-90 % of its nominal power). Results also show that for a reliability of a PV/diesel hybrid system, the rated power of the diesel generator should be equal to the peak load. By the way, it has been verified through this study that the functioning of a pv/Diesel hybrid system is efficient for higher load and higher solar radiation.

  5. Effect of temperature on silicon PIN photodiode radiation detector

    Energy Technology Data Exchange (ETDEWEB)

    Kim, Han Soo; Jeong, Man Hee; Kim, Young Soo; HA, Jang Ho [Korea Atomic Energy Research Institute, Daejeon (Korea, Republic of); Cho, Seong Yeon [Yonsei University, Wonju (Korea, Republic of)

    2014-03-15

    One of the noise sources of a semiconductor radiation detector is thermal noise, which degrades the performance, such as the energy resolution and unexpected random pulse signals. In this study, PIN photodiode radiation detectors, with different active areas were designed and fabricated for an experimental comparison of the energy resolutions for different temperatures and capacitances by using a Ba-133 calibration gamma-ray source. The experimental temperature was approximately in the range from -7 to 24 .deg. C and was controlled by using a peltier device. The design considerations and the electrical characteristics, such as the I-V and the C-V characteristics, are also addressed.

  6. Design and characterization of avalanche photodiodes in submicron CMOS technologies

    Science.gov (United States)

    Pancheri, L.; Bendib, T.; Dalla Betta, G.-F.; Stoppa, D.

    2014-03-01

    The fabrication of Avalanche Photodiodes (APDs) in CMOS processes can be exploited in several application domains, including telecommunications, time-resolved optical detection and scintillation detection. CMOS integration allows the realization of systems with a high degree of parallelization which are competitive with hybrid solutions in terms of cost and complexity. In this work, we present a linear-mode APD fabricated in a 0.15μm process, and report its gain and noise characterization. The experimental observations can be accurately predicted using Hayat dead-space noise model. Device simulations based on dead-space model are then used to discuss the current status and the perspectives for the integration of high-performance low-noise devices in standard CMOS processes.

  7. Frequency conversion through spontaneous degenerate four wave mixing in large mode area hybrid photonic crystal fibers

    DEFF Research Database (Denmark)

    Petersen, Sidsel Rübner; Alkeskjold, Thomas Tanggaard; Olausson, Christina Bjarnal Thulin;

    2014-01-01

    Frequency conversion through spontaneous degenerate four wave mixing (FWM) is investigated in large mode area hybrid photonic crystal fibers. Different FWM processes are observed, phasematching between fiber modes of orthogonal polarization, intermodal phasematching across bandgaps, and intramodal...... phasematching within the same transmission band as the one containing the pump laser. Furthermore first and second order Raman scattering is observed. The interplay between the different FWM processes and Raman scattering are investigated....

  8. Hybrid Wavelength Routed and Optical Packet Switched Ring Networks for the Metropolitan Area Network

    OpenAIRE

    Nord, Martin

    2005-01-01

    Increased data traffic in the metropolitan area network calls for new network architectures. This paper evaluates optical ring architectures based on optical packet switching, wavelength routing, and hybrid combinations of the two concepts. The evaluation includes overall throughput and fairness aspects in both uniform and unbalanced traffic scenarios, for both Poisson and bursty input traffic. Simulations show a trade-off between performance and complexity. Whilst the static wavelength route...

  9. Photodiode and photomultiplier areal sensitivity anomalies

    Science.gov (United States)

    Youngbluth, O., Jr.

    1977-01-01

    Several silicon photodiodes and photomultipliers were tested to determine signal variations as a light spot was scanned over the photosensitive surface of these detectors. Qualitative and quantitative data is presented to demonstrate the areal sensitivity anomalies. These anomalies are related back to the fabrication techniques of the manufacturers.

  10. 4H-SiC Schottky photodiodes for ultraviolet flame detection

    Science.gov (United States)

    Mazzillo, M.; Sciuto, A.

    2015-10-01

    In the last few years silicon carbide (SiC) has emerged as an appropriate material for the detection of very low ultraviolet photon fluxes even at elevated temperatures. In this paper we report on the electro-optical characteristics of large area interdigit Ni2Si/4H-SiC photodiodes in TO metal can package with a suitable molded cap quartz window with high transmission in the ultraviolet wavelength range. The detectors have been tested for the detection of the ultraviolet component of the yellow flame emitted by a small candle, showing good sensitivity for very weak photon fluxes notwithstanding the linear operation condition of the photodiodes.

  11. Tri-generation based hybrid power plant scheduling for renewable resources rich area with energy storage

    International Nuclear Information System (INIS)

    Highlights: • Involves scheduling of the tri-generation based hybrid power plant. • Utilization of renewable energy through energy storage is discussed. • Benefits of the proposed model are illustrated. • Energy efficient and environmental friendly dispatch is analyzed. • Modeled scheduling problem is applicable to any fuel enriched area. - Abstract: Solving power system scheduling is crucial to ensure smooth operations of the electric power industry. Effective utilization of available conventional and renewable energy sources (RES) by tri-generation and with the aid of energy storage facilities (ESF) can ensure clean and energy efficient power generation. Such power generation can play an important role in countries, like Saudi Arabia, where abundant fossil fuels (FF) and renewable energy sources (RES) are available. Hence, effective modeling of such hybrid power systems scheduling is essential in such countries based on the available fuel resources. The intent of this paper is to present a simple model for tri-generation based hybrid power system scheduling for energy resources rich area in presence of ESF, to ensure optimum fuel utilization and minimum pollutant emissions while meeting the power demand. This research points an effective operation strategy which ensure a clean and energy efficient power scheduling by exploiting available energy resources effectively. Hence, it has an important role in current and future power generation. In order to illustrate the benefits of the presented approach a clean and energy efficient hybrid power supply scheme for King Saud University (KSU), Saudi Arabia, is proposed and analyzed here. Results show that the proposed approach is very suitable for KSU since adequate solar power is available during its peak demand periods

  12. Modeling And Simulation As The Basis For Hybridity In The Graphic Discipline Learning/Teaching Area

    Directory of Open Access Journals (Sweden)

    Jana Žiljak Vujić

    2009-01-01

    Full Text Available Only some fifteen years have passed since the scientific graphics discipline was established. In the transition period from the College of Graphics to «Integrated Graphic Technology Studies» to the contemporary Faculty of Graphics Arts with the University in Zagreb, three main periods of development can be noted: digital printing, computer prepress and automatic procedures in postpress packaging production. Computer technology has enabled a change in the methodology of teaching graphics technology and studying it on the level of secondary and higher education. The task has been set to create tools for simulating printing processes in order to master the program through a hybrid system consisting of methods that are separate in relation to one another: learning with the help of digital models and checking in the actual real system. We are setting a hybrid project for teaching because the overall acquired knowledge is the result of completely different methods. The first method is on the free programs level functioning without consequences. Everything remains as a record in the knowledge database that can be analyzed, statistically processed and repeated with new parameter values of the system being researched. The second method uses the actual real system where the results are in proving the value of new knowledge and this is something that encourages and stimulates new cycles of hybrid behavior in mastering programs. This is the area where individual learning incurs. The hybrid method allows the possibility of studying actual situations on a computer model, proving it on an actual real model and entering the area of learning envisaging future development.

  13. Modeling and Simulation as the Basis for Hybridity in the Graphic Discipline Learning/Teaching Area

    Directory of Open Access Journals (Sweden)

    Vilko Ziljak

    2009-11-01

    Full Text Available Only some fifteen years have passed since the scientific graphics discipline was established. In the transition period from the College of Graphics to «Integrated Graphic Technology Studies» to the contemporary Faculty of Graphics Arts with the University in Zagreb, three main periods of development can be noted: digital printing, computer prepress and automatic procedures in postpress packaging production. Computer technology has enabled a change in the methodology of teaching graphics technology and studying it on the level of secondary and higher education. The task has been set to create tools for simulating printing processes in order to master the program through a hybrid system consisting of methods that are separate in relation to one another: learning with the help of digital models and checking in the actual real system.  We are setting a hybrid project for teaching because the overall acquired knowledge is the result of completely different methods. The first method is on the free programs level functioning without consequences. Everything remains as a record in the knowledge database that can be analyzed, statistically processed and repeated with new parameter values of the system being researched. The second method uses the actual real system where the results are in proving the value of new knowledge and this is something that encourages and stimulates new cycles of hybrid behavior in mastering programs. This is the area where individual learning incurs. The hybrid method allows the possibility of studying actual situations on a computer model, proving it on an actual real model and entering the area of learning envisaging future development.

  14. Performance of new Micro-pixel Avalanche Photodiodes from Zecotek Photonics

    Energy Technology Data Exchange (ETDEWEB)

    Sadygov, Z. [Institute of Physics, Javid Ave. 33, AZ 1143 Baku (Azerbaijan); Zecotek Photonics Inc., Vancouver, BC V6T 1Z3 (Canada); Joint Institute for Nuclear Research, 141980 Dubna (Russian Federation)], E-mail: zsadygov@physics.ab.az; Zerrouk, A.F.; Ariffin, A.; Khorev, S.; Sasam, J. [Zecotek Photonics Inc., Vancouver, BC V6T 1Z3 (Canada); Zhezher, V.; Anphimov, N. [Joint Institute for Nuclear Research, 141980 Dubna (Russian Federation); Dovlatov, A.; Musaev, M.; Muxtarov, R.; Safarov, N. [Institute of Physics, Javid Ave. 33, AZ 1143 Baku (Azerbaijan)

    2009-10-21

    Two new types of Micro-pixel Avalanche Photodiodes (MAPD) with sensitive area 3x3 mm{sup 2} and pixel densities of 15 000 and 40 000/mm{sup 2}, respectively, were designed and produced by Zecotek Photonics, Inc. Design and operation principles of these devices are described in this work. Measurement results of basic parameters are given as well.

  15. Bio-inspired nano-photodiode for Low Light, High Resolution and crosstalk-free CMOS image sensing

    KAUST Repository

    Saffih, Faycal

    2011-05-01

    Previous attempts have been devoted to mimic biological vision intelligence at the architectural system level. In this paper, a novel imitation of biological visual system intelligence is suggested, at the device level with the introduction of novel photodiode morphology. The proposed bio-inspired nanorod photodiode puts the depletion region length on the path of the incident photon instead of on its width, as the case is with the planar photodiodes. The depletion region has a revolving volume to increase the photodiode responsivity, and thus its photosensitivity. In addition, it can virtually boost the pixel fill factor (FF) above the 100% classical limit due to decoupling of its vertical sensing area from its limited planar circuitry area. Furthermore, the suggested nanorod photodiode photosensitivity is analytically proven to be higher than that of the planar photodiode. We also show semi-empirically that the responsivity of the suggested device varies linearly with its height; this important feature has been confirmed using Sentaurus simulation. The proposed nano-photorod is believed to meet the increasingly stringent High-Resolution-Low-Light (HRLL) detection requirements of the camera-phone and biomedical imaging markets. © 2011 IEEE.

  16. Study of hybrid power system potential to power agricultural water pump in mountain area

    Science.gov (United States)

    Syuhada, Ahmad; Mubarak, Amir Zaki; Maulana, M. Ilham

    2016-03-01

    As industry and Indonesian economy grow fast, there are a lot of agricultural land has changed into housing and industrial land. This causes the agricultural land moves to mountain area. In mountainous agricultural area, farmers use the water resources of small rivers in the groove of the mountain to irrigate the farmland. Farmers use their power to lift up water from the river to their land which causes inefectivity in the work of the farmers. Farmers who have capital utilize pump to raise water to their land. The only way to use pump in mountain area is by using fuel energy as there is no electricity, and the fuel price in mountain area is very expensive. Based on those reasons it is wise to consider the exploration of renewable energy available in the area such as solar energy, wind energy and hybrid energy. This study analyses the potential of the application of hybrid power plant, which is the combination of solar and wind energy, to power agricultural pump. In this research, the data of wind speed and solar radiation are collected from the measurement of BMKG SMPK Plus Sare. Related to the solar energy, the photovoltaic output power calculation is 193 W with duration of irradiation of 5 hours/day. While for the wind energy, the output power of the wind turbine is 459.84 W with blade diameter of 3 m and blow duration of 7 hours/day. The power of the pump is 558 W with 8 hours of usage, and the water capacity is 2.520 liters/hour for farmland with the area of 15 ha. Based on the analysis result, the designed system will generate electricity of 3.210 kW/year with initial investment of US 14,938.

  17. Performance of a-Si:H photodiode technology-based advanced CMOS active pixel sensor imagers

    Science.gov (United States)

    Theil, Jeremy A.; Haddad, Homayoon; Snyder, Rick D.; Zelman, Mike; Hula, David; Lindahl, Kirk A.

    2001-12-01

    Amorphous silicon photodiode technology is a very attractive option for image array integrated circuits because it enables large die-size reduction and higher light collection efficiency than c-Si arrays. The concept behind the technology is to place the photosensing element directly above the rest of the circuit, thus eliminating the need to make areal tradeoffs between photodiode and pixel circuit. We have developed an photodiode array technology that is fully compatible with a 0.35 um CMOS process to produce image sensors arrays with 10-bit dynamic range that are 30% smaller than comparable c-Si photodiode arrays. The work presented here will discuss performance issues and solutions to lend itself to cost-effective high-volume manufacturing. The various methods of interconnection of the diode to the array and their advantages will be presented. The effect of doped layer thickness and concentration on quantum efficiency, and the effect of a-Si:H defect concentration on diode performance will be discussed. The photodiode dark leakage current density is about 80 pA/cm2, and its absolute quantum efficiency peaks about 85% at 550 nm. These sensors have 50% higher sensitivity, and 2x lower dark current when compared to bulk silicon sensors of the same design. The cell utilizes a 3 FET design, but allows for 100% photodiode area due to the elevated nature of the design. The VGA (640 X 480), array demonstrated here uses common intrinsic and p-type contact layers, and makes reliable contact to those layers by use of a monolithic transparent conductor strap tied to vias in the interconnect.

  18. Delay-area trade-off for MPRM circuits based on hybrid discrete particle swarm optimization

    Institute of Scientific and Technical Information of China (English)

    Jiang Zhidi; Wang Zhenhai; Wang Pengjun

    2013-01-01

    Polarity optimization for mixed polarity Reed-Muller (MPRM) circuits is a combinatorial issue.Based on the study on discrete particle swarm optimization (DPSO) and mixed polarity,the corresponding relation between particle and mixed polarity is established,and the delay-area trade-off of large-scale MPRM circuits is proposed.Firstly,mutation operation and elitist strategy in genetic algorithm are incorporated into DPSO to further develop a hybrid DPSO (HDPSO).Then the best polarity for delay and area trade-off is searched for large-scale MPRM circuits by combining the HDPSO and a delay estimation model.Finally,the proposed algorithm is testified by MCNC Benchmarks.Experimental results show that HDPSO achieves a better convergence than DPSO in terms of search capability for large-scale MPRM circuits.

  19. Degenerate four wave mixing in large mode area hybrid photonic crystal fibers.

    Science.gov (United States)

    Petersen, Sidsel R; Alkeskjold, Thomas T; Lægsgaard, Jesper

    2013-07-29

    Spontaneous degenerate four wave mixing (FWM) is investigated in large mode area hybrid photonic crystal fibers, in which photonic bandgap guidance and index guidance is combined. Calculations show the parametric gain is maximum on the edge of a photonic bandgap, for a large range of pump wavelengths. The FWM products are observed on the edges of a transmission band experimentally, in good agreement with the numerical results. Thereby the bandedges can be used to control the spectral positions of FWM products through a proper fiber design. The parametric gain control combined with a large mode area fiber design potentially allows for power scaling of light at wavelengths not easily accessible with e.g. rare earth ions. PMID:23938682

  20. Degenerate four wave mixing in large mode area hybrid photonic crystal fibers

    DEFF Research Database (Denmark)

    Petersen, Sidsel Rübner; Alkeskjold, Thomas Tanggaard; Lægsgaard, Jesper

    2013-01-01

    Spontaneous degenerate four wave mixing (FWM) is investigated in large mode area hybrid photonic crystal fibers, in which photonic bandgap guidance and index guidance is combined. Calculations show the parametric gain is maximum on the edge of a photonic bandgap, for a large range of pump...... wavelengths. The FWM products are observed on the edges of a transmission band experimentally, in good agreement with the numerical results. Thereby the bandedges can be used to control the spectral positions of FWM products through a proper fiber design. The parametric gain control combined with a large mode...... area fiber design potentially allows for power scaling of light at wavelengths not easily accessible with e.g. rare earth ions....

  1. Silicon photodiode as the two-color detector

    Science.gov (United States)

    Ponomarev, D. B.; Zakharenko, V. A.

    2015-11-01

    This paper describes a silicon photodiode as the two-color photodetector. The work of one photodiode in two spectral ranges is achieved due to the changes of the spectral sensitivity of the photodiodes in the transition from photodiode mode for photovoltaic in the short circuit mode. On the basis of silicon photodiode FD-256 the layout of the spectral ratio pyrometer was assembled and the results of theoretical calculations was confirmed experimentally. The calculated dependences of the coefficient of error of the spectral ratio pyrometer from temperature reverse voltage 10 and 100 V was presented. The calculated dependence of the instrumental error and the assessment of methodological errors of the proposed photodetector spectral ratio was done. According to the results of the presented research was set the task of development photodiode detectors which change the spectral sensitivity depending on the applied voltage.

  2. Differences of silicon photodiode spectral reflectance among the same batch

    Institute of Scientific and Technical Information of China (English)

    A.L.Mu(n)oz Zurita; J.Campos Acosta; A.Pons Aglio; A.Shcherbakov

    2008-01-01

    Photodiode's reflectance plays an important role regarding the relation between responsivity and the incident flux. In this work we analyze how the spectral reflectance changes among photodiodes from the same manufacturer and batch and how the reflectance of three standard photodiodes has drifted during six years. The results show that the reflectance changes from diode to diode within the same batch and also show th.at the reflectance ofphotodiodes changes on time. This ageing is spectrally dependent.

  3. Nano-multiplication region avalanche photodiodes and arrays

    Science.gov (United States)

    Zheng, Xinyu (Inventor); Pain, Bedabrata (Inventor); Cunningham, Thomas J. (Inventor)

    2011-01-01

    An avalanche photodiode with a nano-scale reach-through structure comprising n-doped and p-doped regions, formed on a silicon island on an insulator, so that the avalanche photodiode may be electrically isolated from other circuitry on other silicon islands on the same silicon chip as the avalanche photodiode. For some embodiments, multiplied holes generated by an avalanche reduces the electric field in the depletion region of the n-doped and p-doped regions to bring about self-quenching of the avalanche photodiode. Other embodiments are described and claimed.

  4. A Hybrid Surface Energy Balance Approach for Large Scale Evapotranspiration Estimation and Prediction in Agricultural Areas

    Science.gov (United States)

    Neale, C. M.; Vinukollu, R. K.; Chavez, J. L.

    2005-05-01

    Over the last few years, several surface energy balance methods for the estimation of latent heat fluxes from remotely sensed satellite imagery have been introduced and/or refined. These models have shown the ability of obtaining seasonal spatially distributed evapotranspiration fluxes at various scales and over large areas. In the arid western United States, water managers are challenged in balancing the high consumptive use of irrigated agriculture with competing urban and ecological uses of fresh water. Water managers from Irrigation Districts and Federal Agencies such as the US Bureau of Reclamation have a need for improved operational tools for the prediction of evapotranspiration and irrigation water demand on a five to ten day timeframe. The paper will present a hybrid model that couples the surface energy balance approach with a simple empirical reflectance-based crop coefficient model, for estimation and prediction of evapotranspiration over large agricultural areas. The model is applied to a rain-fed intensively cultivated agricultural area, close to Ames, Iowa during the summer of 2002. The satellite, airborne and ground fluxes were collected during the SMACEX 02 experiment. The model is run in both simulation and prediction mode and the derived latent heat fluxes are compared spatially and temporally to aircraft derived fluxes from the USU airborne system and ground measured fluxes at thirteen eddy covariance stations, using appropriate upwind footprint source area functions.

  5. Investigation of a photon counting avalanche photodiode from Hamamatsu photonics

    Science.gov (United States)

    Britvitch, I.; Musienko, Y.; Renker, D.

    2006-11-01

    Multi-cell avalanche photodiodes (APDs) operating in Geiger mode have been shown to be a very promising alternative to photomultiplier tubes for the detection of single photons at room temperature. Like a photomultiplier they have high gain and a fast rise time and they are insensitive to pickup. Beyond it they operate in high magnetic fields, are compact and need a relatively low bias voltage. It is expected that the MOS production technique makes them cheap. Recently PSI and Hamamatsu Photonics worked together for the development of a radiation-hard APD for CMS ECAL and had very good success. The development continued based on a similar design for a photon counting multielement Geiger-mode APD with an area of 1×1 mm 2. The properties of this device have been measured and will be reported.

  6. Investigation of a photon counting avalanche photodiode from Hamamatsu photonics

    Energy Technology Data Exchange (ETDEWEB)

    Britvitch, I. [ETH Zuerich (Switzerland); Musienko, Y. [Northeastern University, Boston (United States); Renker, D. [Paul Scherrer Institute, Villigen PSI, 5232 Villigen (Switzerland)]. E-mail: dieter.renker@psi.ch

    2006-11-01

    Multi-cell avalanche photodiodes (APDs) operating in Geiger mode have been shown to be a very promising alternative to photomultiplier tubes for the detection of single photons at room temperature. Like a photomultiplier they have high gain and a fast rise time and they are insensitive to pickup. Beyond it they operate in high magnetic fields, are compact and need a relatively low bias voltage. It is expected that the MOS production technique makes them cheap. Recently PSI and Hamamatsu Photonics worked together for the development of a radiation-hard APD for CMS ECAL and had very good success. The development continued based on a similar design for a photon counting multielement Geiger-mode APD with an area of 1x1 mm{sup 2}. The properties of this device have been measured and will be reported.

  7. Learning strategies used by undergraduate and postgraduate students in hybrid courses in the area of health.

    Science.gov (United States)

    Peixoto, Henry Maia; Peixoto, Mariana Maia; Alves, Elioenai Dornelles

    2012-01-01

    This study aimed to investigate the learning habits and strategies of undergraduate and post-graduate students matriculated in hybrid courses in the area of healthcare at a Brazilian university. 220 graduate students were invited to participate in the research, of whom 67.27% accepted. An exploratory methodology was utilized, which analyzed quantitative data collected by a structured instrument. A similarity may be observed between undergraduate and postgraduate students concerning the majority of education habits and learning strategies, such as the large proportion of those who read more than half of the course content and of those who preferred to study alone, as well as in the high use of the majority of strategies evaluated. It is concluded that both the groups present appropriate study habits and satisfactorily used the learning strategies investigated.

  8. Hybrid multiphase CFD simulation for liquid-liquid interfacial area prediction in annular centrifugal contactors

    International Nuclear Information System (INIS)

    Liquid-liquid contacting equipment used in solvent extraction processes has the dual purpose of mixing and separating two immiscible fluids. Consequently, such devices inherently encompass a wide variety of multiphase flow regimes. A hybrid multiphase computational fluid dynamics (CFD) solver which combines the Eulerian multi-fluid method with VOF (volume of fluid) sharp interface capturing has been developed for application to annular centrifugal contactors. This solver has been extended to enable prediction of mean droplet size and liquid-liquid interfacial area through a single moment population balance method. Simulations of liquid-liquid mixing in a simplified geometry and a model annular centrifugal contactor are reported with droplet breakup/coalescence models being calibrated versus available experimental data. Quantitative comparison is made for two different housing vane geometries and it is found that the predicted droplet size is significantly smaller for vane geometries which result in higher annular liquid holdup

  9. Hybrid multiphase CFD simulation for liquid-liquid interfacial area prediction in annular centrifugal contactors

    Energy Technology Data Exchange (ETDEWEB)

    Wardle, K.E. [Chemical Sciences and Engineering Division, Argonne National Laboratory, Argonne, IL 60439 (United States)

    2013-07-01

    Liquid-liquid contacting equipment used in solvent extraction processes has the dual purpose of mixing and separating two immiscible fluids. Consequently, such devices inherently encompass a wide variety of multiphase flow regimes. A hybrid multiphase computational fluid dynamics (CFD) solver which combines the Eulerian multi-fluid method with VOF (volume of fluid) sharp interface capturing has been developed for application to annular centrifugal contactors. This solver has been extended to enable prediction of mean droplet size and liquid-liquid interfacial area through a single moment population balance method. Simulations of liquid-liquid mixing in a simplified geometry and a model annular centrifugal contactor are reported with droplet breakup/coalescence models being calibrated versus available experimental data. Quantitative comparison is made for two different housing vane geometries and it is found that the predicted droplet size is significantly smaller for vane geometries which result in higher annular liquid holdup.

  10. Status of the development of large area photon detectors based on THGEMs and hybrid MPGD architectures for Cherenkov imaging applications

    Science.gov (United States)

    Alexeev, M.; Birsa, R.; Bradamante, F.; Bressan, A.; Büchele, M.; Chiosso, M.; Ciliberti, P.; Torre, S. Dalla; Dasgupta, S.; Denisov, O.; Duic, V.; Finger, M.; Finger, M.; Fischer, H.; Giorgi, M.; Gobbo, B.; Gregori, M.; Herrmann, F.; Königsmann, K.; Levorato, S.; Maggiora, A.; Martin, A.; Menon, G.; Steiger, K.; Novy, J.; Panzieri, D.; Pereira, F. A.; Santos, C. A.; Sbrizzai, G.; Schiavon, P.; Schopferer, S.; Slunecka, M.; Sozzi, F.; Steiger, L.; Sulc, M.; Takekawa, S.; Tessarotto, F.; Veloso, J. F. C. A.; Makke, N.

    2016-07-01

    We report about the development status of large area gaseous single photon detectors based on a novel hybrid concept for RICH applications. The hybrid concept combines Thick Gaseous Electron Multipliers (THGEMs) coupled to CsI, working as a photon sensitive pre-amplification stage, and Micromegas, as a multiplication stage. The most recent achievements within the research and development programme consist in the assembly and study of 300 × 300mm2 hybrid photon detectors, the optimization of front-end electronics, and engineering towards large area detectors. Hybrid detectors with an active area of 300 × 300mm2 have been successfully operated in laboratory conditions and at a CERN PS T10 test beam, achieving effective gains in the order of 105 and good time resolution (σ = 7 ns); APV25 front-end chips have been coupled to the detector resulting in noise levels lower than 1000 electrons; the production and characterization of 300 × 600mm2 THGEMs is ongoing. A set of hybrid detectors with 600 × 600mm2 active area is envisaged to upgrade COMPASS RICH-1 at CERN in 2016.

  11. Combined performance of photodiode matrices with electron-optical converters

    International Nuclear Information System (INIS)

    As applied to plasma diagnostics using the methods of laser scattering, a necessity to use an electron-optical converter aheat of photodiode matrices is pointed out. Investigation results of the MF-16 integrated photodiode matrix performance in combination with various electron-optical convertes are presented. The possibility to use the system for recording weak pulse optical signals is shown

  12. A high-speed avalanche photodiode

    International Nuclear Information System (INIS)

    High-speed avalanche photodiodes are widely used in optical communication systems. Nowadays, separate absorption charge and multiplication structure is widely adopted. In this article, a structure with higher speed than separate absorption charge and multiplication structure is reported. Besides the traditional absorption layer, charge layer and multiplication layer, this structure introduces an additional charge layer and transit layer and thus can be referred to as separate absorption, charge, multiplication, charge and transit structure. The introduction of the new charge layer and transit layer brings additional freedom in device structure design. The benefit of this structure is that the carrier transit time and device capacitance can be reduced independently, thus the 3 dB bandwidth could be improved by more than 50% in contrast to the separate absorption charge and multiplication structure with the same size. (semiconductor devices)

  13. Avalanche photodiodes for the CMS detector

    CERN Document Server

    Deiters, K; Ingram, Q; Nicol, S; Musienko, I; Patel, B; Renker, D; Reucroft, S; Rusack, R W; Sakhelashvili, T M; Singovsky, A V; Swain, J D; Vikas, P

    2000-01-01

    The CERN LHC experiment CMS has selected for the readout of the barrel crystal calorimeter a 5*5 mm/sup 2/ avalanche photodiode (APD) manufactured by Hamamatsu Photonics. In the detector we will equip each crystal with two APDs for a total of 122400 diodes. As the calorimeter will be almost completely inaccessible during the life of the detector, the assurance that they will survive with a high probability in the intense radiation field is an essential part of the of the APD qualification process. In this paper the properties of the APD selected will be described, as well as the procedures we have developed to assure their radiation hardness and reliability. (2 refs).

  14. Hybrid ARQ Error-Controlling Scheme for Robust and Efficient Transmission of UWB Body Area Networks

    Science.gov (United States)

    Suzuki, Haruka; Hernandez, Marco; Kohno, Ryuji

    This paper presents hybrid type-II automatic repeat request (H-ARQ) for wireless wearable body area networks (BANs) based on ultra wideband (UWB) technology. The proposed model is based on three schemes, namely, high rate optimized rate compatible punctured convolutional codes (HRO-RCPC), Reed Solomon (RS) invertible codes and their concatenation. Forward error correction (FEC) coding is combined with simple cyclic redundancy check (CRC) error detection. The performance is investigated for two channels: CM3 (on-body to on-body) and CM4 (on-body to a gateway) scenarios of the IEEE802.15.6 BAN channel models for BANs. It is shown that the improvement in performance in terms of throughput and error protection robustness is very significant. Thus, the proposed H-ARQ schemes can be employed and optimized to suit medical and non-medical applications. In particular we propose the use of FEC coding for non-medical applications as those require less stringent quality of service (QoS), while the incremental redundancy and ARQ configuration is utilized only for medical applications. Thus, higher QoS is guaranteed for medical application of BANs while allowing coexistence with non-medical applications.

  15. Wide area measurement system for smart grid applications involving hybrid energy sources

    Energy Technology Data Exchange (ETDEWEB)

    Amin, Mahmoud M.; Moussa, Heba B.; Mohammed, Osama A. [Florida International University, Energy Systems Research Laboratory, Department of Electrical and Computer Engineering, Miami, FL (United States)

    2012-03-15

    This paper presents a model and experimental verification for a complete scenario of a proposed wide area measurement system (WAMS) based on synchronized phasor measurement units (PMUs). The proposed system is feasible for hybrid smart ac/dc power networks; such as grid-connected PV-power plants. The purpose is to increase the overall system reliability for all power stages via significant dependence on WAMS as distributed intelligence agents with improved monitoring, protection, and control capabilities of the power networks. The developed system is simulated in the Matlab/Simulink environment. The system was tested under two different cases; normal operation and fault state. Furthermore, the proposed WAMS was experimentally validated with results obtained from a reduced scale setup which built and tested in the laboratory based on the Hardware-in-the-loop concept. It was verified that the power system status can be easily monitored and controlled in real time by using the measured bus data in real time. This improves the overall system reliability and avoids cascaded blackout during fault occurrence. The simulation and experimental results confirm the validity of the proposed WAMS technology for smart grid applications. (orig.)

  16. Wedge hybrid plasmonic THz waveguide with long propagation length and ultra-small deep-subwavelength mode area.

    Science.gov (United States)

    Gui, Chengcheng; Wang, Jian

    2015-01-01

    We present a novel design of wedge hybrid plasmonic terahertz (THz) waveguide consisting of a silicon (Si) nanowire cylinder above a triangular gold wedge with surrounded high-density polyethylene as cladding. It features long propagation length and ultra-small deep-subwavelength mode confinement. The mode properties of wedge hybrid plasmonic THz waveguide are comprehensively characterized in terms of propagation length (L), normalized mode area (Aeff/A0), figure of merit (FoM), and chromatic dispersion (D). The designed wedge hybrid plasmonic THz waveguide enables an ultra-small deep-subwavelength mode area which is more than one-order of magnitude smaller compared to previous rectangular one. When choosing the diameter of Si nanowire cylinder, a smaller diameter (e.g. 10 μm) is preferred to achieve longer L and higher FoM, while a larger diameter (e.g. 60 μm) is favorable to obtain smaller Aeff/A0 and higher FoM. We further study the impacts of possible practical fabrication errors on the mode properties. The simulated results of propagation length and normalized mode area show that the proposed wedge hybrid plasmonic THz waveguide is tolerant to practical fabrication errors in geometry parameters such as misalignment in the horizontal direction, variation of wedge tip angle, and variation of wedge tip curvature radius. PMID:26155782

  17. Hybrid Broadband Ground-Motion Simulation Using Scenario Earthquakes for the Istanbul Area

    KAUST Repository

    Reshi, Owais A.

    2016-04-13

    Seismic design, analysis and retrofitting of structures demand an intensive assessment of potential ground motions in seismically active regions. Peak ground motions and frequency content of seismic excitations effectively influence the behavior of structures. In regions of sparse ground motion records, ground-motion simulations provide the synthetic seismic records, which not only provide insight into the mechanisms of earthquakes but also help in improving some aspects of earthquake engineering. Broadband ground-motion simulation methods typically utilize physics-based modeling of source and path effects at low frequencies coupled with high frequency semi-stochastic methods. I apply the hybrid simulation method by Mai et al. (2010) to model several scenario earthquakes in the Marmara Sea, an area of high seismic hazard. Simulated ground motions were generated at 75 stations using systematically calibrated model parameters. The region-specific source, path and site model parameters were calibrated by simulating a w4.1 Marmara Sea earthquake that occurred on November 16, 2015 on the fault segment in the vicinity of Istanbul. The calibrated parameters were then used to simulate the scenario earthquakes with magnitudes w6.0, w6.25, w6.5 and w6.75 over the Marmara Sea fault. Effects of fault geometry, hypocenter location, slip distribution and rupture propagation were thoroughly studied to understand variability in ground motions. A rigorous analysis of waveforms reveal that these parameters are critical for determining the behavior of ground motions especially in the near-field. Comparison of simulated ground motion intensities with ground-motion prediction quations indicates the need of development of the region-specific ground-motion prediction equation for Istanbul area. Peak ground motion maps are presented to illustrate the shaking in the Istanbul area due to the scenario earthquakes. The southern part of Istanbul including Princes Islands show high amplitudes

  18. X-ray imager using solution processed organic transistor arrays and bulk heterojunction photodiodes on thin, flexible plastic substrate

    NARCIS (Netherlands)

    Gelinck, G.H.; Kumar, A.; Moet, D.; Steen, J.L. van der; Shafique, U.; Malinowski, P.E.; Myny, K.; Rand, B.P.; Simon, M.; Rütten, W.; Douglas, A.; Jorritsma, J.; Heremans, P.L.; Andriessen, H.A.J.M.

    2013-01-01

    We describe the fabrication and characterization of large-area active-matrix X-ray/photodetector array of high quality using organic photodiodes and organic transistors. All layers with the exception of the electrodes are solution processed. Because it is processed on a very thin plastic substrate o

  19. CMOS array of photodiodes with electronic processing for 3D optical reconstruction

    Science.gov (United States)

    Hornero, Gemma; Montane, Enric; Chapinal, Genis; Moreno, Mauricio; Herms, Atila

    2001-04-01

    It is well known that laser time-of-flight (TOF) and optical triangulation are the most useful optical techniques for distance measurements. The first one is more suitable for large distances, since for short range of distances high modulation frequencies of laser diodes (©200-500MHz) are needed. For these ranges, optical triangulation is simpler, as it is only necessary to read the projection of the laser point over a linear optical sensor without any laser modulation. Laser triangulation is based on the rotation of the object. This motion shifts the projected point over the linear sensor, resulting on 3D information, by means of the whole readout of the linear sensor in each angle position. On the other hand, a hybrid method of triangulation and TOF can be implemented. In this case, a synchronized scanning of a laser beam over the object results in different arrival times of light to each pixel. The 3D information is carried by these delays. Only a single readout of the linear sensor is needed. In this work we present the design of two different linear arrays of photodiodes in CMOS technology, the first one based on the Optical triangulation measurement and the second one based in this hybrid method (TFO). In contrast to PSD (Position Sensitive Device) and CCDs, CMOS technology can include, on the same chip, photodiodes, control and processing electronics, that in the other cases should be implemented with external microcontrollers.

  20. Characterization of Al0.8Ga0.2As geiger photodiode

    Science.gov (United States)

    Chen, X. J.; Ren, Min; Chen, Yaojia; Johnson, E. B.; Campbell, Joe C.; Christian, James F.

    2015-08-01

    Solid-state photomultipliers (SSPM) are high gain photodetectors composed of Geiger photodiodes (GPD) operating above device breakdown voltage. In scintillation based radiation detection applications, SSPMs fabricated using silicon (SiPMs, MPPCs, etc) provide a compact, low cost alternative to photomultiplier tubes (PMTs), however, the high dark count rate due to its low band-gap (1.1eV) limits the signal-to-noise performance as the silicon SSPM is scaled to large areas. SSPMs fabricated in materials with a larger band-gap have the potential to surmount the performance limitations experienced by silicon. AlGaAs is a material that provides a bandgap from 1.55eV to 2.13 eV, depending on Al concentration. Using high Al concentration AlGaAs to engineer a wideband- gap (>2eV) SSPM is very desirable in terms of reducing dark noise, which promises better signal-to-noise performances when large detector areas is needed. This work describes the development of Geiger photodiodes (GPDs), the individual elements of a SSPM, fabricated in AlGaAs with 80% Al concentration. We present the design of the GPDs, the fabrication process, along with characterization data of fabricated GPD samples. To the best of our knowledge, we have demonstrated for the first time, a passively quenched Geiger photodiode in Al0.8Ga0.2As.

  1. Modular design for narrow scintillating cells with MRS photodiodes in strong magnetic field for ILC detector

    Science.gov (United States)

    Beznosko, D.; Blazey, G.; Dyshkant, A.; Rykalin, V.; Schellpffer, J.; Zutshi, V.

    2006-08-01

    The experimental results for the narrow scintillating elements with effective area about 20 cm 2 are reported. The elements were formed from the single piece of scintillator and were read out via wavelength shifting (WLS) fibers with the Metal/Resistor/Semiconductor (MRS) photodiodes on both ends of each fiber. The count rates were obtained using radioactive source 90Sr, with threshold at about three photoelectrons in each channel and quad coincidences (double coincidences between sensors on each fiber and double coincidences between two neighboring fibers). The formation of the cells from the piece of scintillator by using grooves is discussed, and their performances were tested using the radioactive source by measuring the photomutiplier current using the same WLS fiber. Because effective cell area can be readily enlarged or reduced, this module may be used as an active element for calorimeter or muon system for the design of the future electron-positron linear collider detector. Experimental verification of the performance of the MRS photodiode in a strong magnetic field of 9 T, and the impact a magnet quench at 9.5 T are reported. The measurement method used is described. The results confirm the expectations that the MRS photodiode is insensitive to a strong magnetic field and therefore applicable to calorimetry in the presence of magnetic field. The overall result is of high importance for large multi-channel systems.

  2. A hybrid variational-ensemble data assimilation scheme with systematic error correction for limited-area ocean models

    Science.gov (United States)

    Oddo, Paolo; Storto, Andrea; Dobricic, Srdjan; Russo, Aniello; Lewis, Craig; Onken, Reiner; Coelho, Emanuel

    2016-10-01

    A hybrid variational-ensemble data assimilation scheme to estimate the vertical and horizontal parts of the background error covariance matrix for an ocean variational data assimilation system is presented and tested in a limited-area ocean model implemented in the western Mediterranean Sea. An extensive data set collected during the Recognized Environmental Picture Experiments conducted in June 2014 by the Centre for Maritime Research and Experimentation has been used for assimilation and validation. The hybrid scheme is used to both correct the systematic error introduced in the system from the external forcing (initialisation, lateral and surface open boundary conditions) and model parameterisation, and improve the representation of small-scale errors in the background error covariance matrix. An ensemble system is run offline for further use in the hybrid scheme, generated through perturbation of assimilated observations. Results of four different experiments have been compared. The reference experiment uses the classical stationary formulation of the background error covariance matrix and has no systematic error correction. The other three experiments account for, or not, systematic error correction and hybrid background error covariance matrix combining the static and the ensemble-derived errors of the day. Results show that the hybrid scheme when used in conjunction with the systematic error correction reduces the mean absolute error of temperature and salinity misfit by 55 and 42 % respectively, versus statistics arising from standard climatological covariances without systematic error correction.

  3. SiC Avalanche Photodiodes and Arrays Project

    Data.gov (United States)

    National Aeronautics and Space Administration — Aymont Technology, Inc. (Aymont) will demonstrate the feasibility of SiC p-i-n avalanche photodiodes (APD) arrays. Aymont will demonstrate 4 x 4 arrays of 2 mm2...

  4. A concept for a hadron calorimeter with photodiode readout

    International Nuclear Information System (INIS)

    A concept for a hadron calorimeter will be described. The calorimeter is a scintillator sandwich type with WLS-bars and photodiode readout. Emphasis is put on compactness, high stability, easy fabrication, and safety. (orig.)

  5. Design and optimization of evanescently coupled waveguide photodiodes

    Institute of Scientific and Technical Information of China (English)

    Yao Chen; Cheng Yuanbing; Wu Jian; Xu Kun; Qiu Jifang; Zhao Lingjuan; Wang Wei; Lin Jintong

    2011-01-01

    We present the design and optimization of evanescently coupled waveguide photodiodes (EC-WPDs) based on the coupling modes theory and the beam propagation method.Efficient focalization of the optical power in the absorber is achieved by an appropriate choice of index matching layers of EC-WPDs.Numerical simulation shows that high-speed (40 GHz),high quantum efficiency (81%) and high linearity photodiodes can be achieved,and EC-WPDs are promising devices for future optical communication systems.

  6. Infrared vertically-illuminated photodiode for chip alignment feedback

    Science.gov (United States)

    Alloatti, L.; Ram, R. J.

    2016-08-01

    We report on vertically-illuminated photodiodes fabricated in the GlobalFoundries 45nm 12SOI node and on a packaging concept for optically-interconnected chips. The photodiodes are responsive at 1180 nm -a wavelength currently used in chip-to-chip communications. They have further a wide field-of-view which enables chip-to-board positional feedback in chip-board assemblies. Monolithic integration enables on-chip processing of the positional data.

  7. Infrared vertically-illuminated photodiode for chip alignment feedback

    CERN Document Server

    Alloatti, Luca

    2016-01-01

    We report on vertically-illuminated photodiodes fabricated in the GlobalFoundries 45nm 12SOI node and on a packaging concept for optically-interconnected chips. The photodiodes are responsive at 1180 nm, a wavelength currently used in chip-to-chip communications. They have further a wide field-of-view which enables chip-to-board positional feedback in chip-board assemblies. Monolithic integration enables on-chip processing of the positional data.

  8. Photodiode Circuit Macro-model for SPICE Simulation

    Institute of Scientific and Technical Information of China (English)

    2006-01-01

    An accurate photodiode circuit macro-model is proposed for SPICE simulation. The definition and implementation of the macro-model is based on carrier stationary continuity equation. In this macro-model, the photodiode is a device of three pins, one for light intensity input and the other two for photocurrent output, which represent the relationship between photocurrent and incident light. The validity of the proposed macro-model is demonstrated with its PSPICE simulation result compared with reported experimental data.

  9. A hybrid variational ensemble data assimilation for the HIgh Resolution Limited Area Model (HIRLAM)

    OpenAIRE

    N. Gustafsson; J. Bojarova; O. Vignes

    2014-01-01

    A hybrid variational ensemble data assimilation has been developed on top of the HIRLAM variational data assimilation. It provides the possibility of applying a flow-dependent background error covariance model during the data assimilation at the same time as full rank characteristics of the variational data assimilation are preserved. The hybrid formulation is based on an augmentation of the assimilation control variable with localised weights to be assigned to a set of ense...

  10. Development of a gamma dosimeter using a photodiode

    International Nuclear Information System (INIS)

    In the last years, the application of semiconductor detectors in radiation spectroscopy and dosimetry has increased. Silicon diodes have found utility in radiation dosimetry principally because a diode produces a current approximately 18000 times larger than of an ionization chamber of an equal sensitive volume. As the characteristics of the semiconductor detectors are the same as the common photodiode, a gamma dosimeter using this type of electronic component was developed. The photodiode SFH206 operating in photovoltaic mode was used. An electrometric unit was constructed to measure the current generated in this detector. The results obtained showed: the response of the photodiode was linear with the dose and that variation of 40 degrees in the incidence angle of the radiation caused a variation of 5% in the dose determination; the response reproducibility of the photodiode was studied, and the results showed that the variation coefficient is smaller than 0,02%; the small dimension of the silicon photodiode recommend its use as a gamma dosimeter for medical applications. (author). 19 refs, 32 figs, 1 tab

  11. Photocurrent enhancement of HgTe quantum dot photodiodes by plasmonic gold nanorod structures.

    Science.gov (United States)

    Chen, Mengyu; Shao, Lei; Kershaw, Stephen V; Yu, Hui; Wang, Jianfang; Rogach, Andrey L; Zhao, Ni

    2014-08-26

    The near-field effects of noble metal nanoparticles can be utilized to enhance the performance of inorganic/organic photosensing devices, such as solar cells and photodetectors. In this work, we developed a well-controlled fabrication strategy to incorporate Au nanostructures into HgTe quantum dot (QD)/ZnO heterojunction photodiode photodetectors. Through an electrostatic immobilization and dry transfer protocol, a layer of Au nanorods with uniform distribution and controllable density is embedded at different depths in the ZnO layer for systematic comparison. More than 80 and 240% increments of average short-circuit current density (Jsc) are observed in the devices with Au nanorods covered by ∼7.5 and ∼4.5 nm ZnO layers, respectively. A periodic finite-difference time-domain (FDTD) simulation model is developed to analyze the depth-dependent property and confirm the mechanism of plasmon-enhanced light absorption in the QD layer. The wavelength-dependent external quantum efficiency spectra suggest that the exciton dissociation and charge extraction efficiencies are also enhanced by the Au nanorods, likely due to local electric field effects. The photodetection performance of the photodiodes is characterized, and the results show that the plasmonic structure improves the overall infrared detectivity of the HgTe QD photodetectors without affecting their temporal response. Our fabrication strategy and theoretical and experimental findings provide useful insight into the applications of metal nanostructures to enhance the performance of organic/inorganic hybrid optoelectronic devices. PMID:25020202

  12. [Wastewater Quantity and Quality Fluctuation Characteristics of Typical Area of Hybrid Sewage System].

    Science.gov (United States)

    Cheng, Xun; Zhang, Ming-kai; Liu, Yan-chen; Shi, Han-chang

    2016-05-15

    The inflow and infiltration problems cause large fluctuation in wastewater quantity and quality in hybrid sewage system. This seriously challenges the operation and management of sewage system. A multi-point on-line simultaneous monitoring system was established in a typical hybrid sewage system. The key characteristic parameters and their variation features under different circumstances were studied. The result indicated that the daily variation rule was obvious and appeared synchronous among multiple points at normal water level under dry weather flow, but there was no synchronization in conductivity variation among multiple points at high water level under dry weather flow. The statistical distribution range of water level and conductivity was significantly impacted by the seasonal rainfall change under dry weather. The statistical distribution ranges of water level variation rate and conductivity variation rate in specific time were significantly impacted by the rainfall. The response features of water level and conductivity to rainfall intensity and pattern were significantly different under different circumstances. The response sensitivity of conductivity was higher than water level at normal water level and lower at high water level. The database which could support the optimization of operation and management in the hybrid sewage system was proposed based on the distribution law of wastewater quality and quantity fluctuation under dry and wet weather, as well as the variation rate features of wastewater quality and quantity during rainfall obtained using the multi-point on-line simultaneous monitoring system. PMID:27506039

  13. Metropolitian area network services comprised of virtual local area networks running over hybrid fiber-coax and asynchronous transfer mode technologies

    Science.gov (United States)

    Biedron, William S.

    1995-11-01

    Since 1990 there has been a rapid increase in the demand for communication services, especially local and wide area network (LAN/WAN) oriented services. With the introduction of the DFB laser transmitter, hybrid-fiber-coax (HFC) cable plant designs, ATM transport technologies and rf modems, new LAN/WAN services can now be defined and marketed to residential and business customers over existing cable TV systems. The term metropolitan area network (MAN) can be used to describe this overall network. This paper discusses the technical components needed to provision these services as well as provides some perspectives on integration issues. Architecture at the headend and in the backbone is discussed, as well as specific service definitions and the technology issues associated with each. The TCP/IP protocol is suggested as a primary protocol to be used throughout the MAN.

  14. The Technical and Economic Study of Solar-Wind Hybrid Energy System in Coastal Area of Chittagong, Bangladesh

    Directory of Open Access Journals (Sweden)

    Shuvankar Podder

    2015-01-01

    Full Text Available The size optimization and economic evaluation of the solar-wind hybrid renewable energy system (RES to meet the electricity demand of 276 kWh/day with 40 kW peak load have been determined in this study. The load data has been collected from the motels situated in the coastal areas of Patenga, Chittagong. RES in standalone as well as grid connected mode have been considered. The optimal system configurations have been determined based on systems net present cost (NPC and cost of per unit energy (COE. A standalone solar-wind-battery hybrid system is feasible and economically comparable to the present cost of diesel based power plant if 8% annual capacity shortage is allowed. Grid tied solar-wind hybrid system, where more than 70% electricity contribution is from RES, is economically comparable to present grid electricity price. Moreover, grid tied RES results in more than 60% reduction in greenhouse gases emission compared to the conventional grid. Sensitivity analysis has been performed in this study to determine the effect of capital cost variation or renewable resources variation on the system economy. Simulation result of sensitivity analysis has showed that 20% reduction of installation cost results in nearly 9%–12% reductions in cost of per unit energy.

  15. PbS colloidal quantum dot photodiodes for SWIR detection

    OpenAIRE

    Heves, Emre; Gürbüz, Yaşar; Gurbuz, Yasar

    2012-01-01

    In this work, PbS colloidal quantum dot based photodiodes are realized compatible for the integration on ROIC's. Schottky photodiode architecture is selected for its fast response and moderate sensitivity. The device is formed from Indium tin oxide (ITO) anode, the photosensitive PbS layer and a schottky contact formed of titanium and gold. Pinhole-free uniform PbS quantum dots film achieved by optimized layer by layer spin coating process. Solid-state ligand change procedure applied during f...

  16. Low-energy X-ray and gamma spectrometry using silicon photodiodes; Espectrometria de raios X e gama de baixa energia utilizando fotodiodos de silicio

    Energy Technology Data Exchange (ETDEWEB)

    Silva, Iran Jose Oliveira da

    2000-08-01

    The use of semiconductor detectors for radiation detection has increased in recent years due to advantages they present in comparison to other types of detectors. As the working principle of commercially available photodiodes is similar to the semiconductor detector, this study was carried out to evaluate the use of Si photodiodes for low energy x-ray and gamma spectrometry. The photodiodes investigated were SFH-205, SFH-206, BPW-34 and XRA-50 which have the following characteristics: active area of 0,07 cm{sup 2} and 0,25 cm{sup 2}, thickness of the depletion ranging from 100 to 200 {mu}m and junction capacitance of 72 pF. The photodiode was polarized with a reverse bias and connected to a charge sensitive pre-amplifier, followed by a amplifier and multichannel pulse analyzer. Standard radiation source used in this experiment were {sup 241} Am, {sup 109} Cd, {sup 57} Co and {sup 133} Ba. The X-ray fluorescence of lead and silver were also measured through K- and L-lines. All the measurements were made with the photodiodes at room temperature.The results show that the responses of the photodiodes very linear by the x-ray energy and that the energy resolution in FWHM varied between 1.9 keV and 4.4 keV for peaks corresponding to 11.9 keV to 59 keV. The BPW-34 showed the best energy resolution and the lower dark current. The full-energy peak efficiency was also determined and it was observed that the peak efficiency decreases rapidly above 50 keV. The resolution and efficiency are similar to the values obtained with other semiconductor detectors, evidencing that the photodiodes used in that study can be used as a good performance detector for low energy X-ray and gamma spectrometry. (author)

  17. PbS colloidal quantum dot photodiodes for low-cost SWIR sensing

    Science.gov (United States)

    Klem, Ethan J. D.; Gregory, Chris; Temple, Dorota; Lewis, Jay

    2015-06-01

    RTI has developed a photodiode technology based on solution-processed PbS colloidal quantum dots (CQD). These devices are capable of providing low-cost, high performance detection across the Vis-SWIR spectral range. At the core of this technology is a heterojunction diode structure fabricated using techniques well suited to wafer-scale fabrication, such as spin coating and thermal evaporation. This enables RTI's CQD diodes to be processed at room temperature directly on top of read-out integrated circuits (ROIC), without the need for the hybridization step required by traditional SWIR detectors. Additionally, the CQD diodes can be fabricated on ROICs designed for other detector material systems, effectively allowing rapid prototype demonstrations of CQD focal plane arrays at low cost and on a wide range of pixel pitches and array sizes.

  18. Independently accessed back-to-back HgCdTe photodiodes: A new dual-band infrared detector

    Science.gov (United States)

    Reine, M. B.; Norton, P. W.; Starr, R.; Weiler, M. H.; Kestigian, M.; Musicant, B. L.; Mitra, P.; Schimert, T.; Case, F. C.; Bhat, Lb.; Ehsani, H.; Rao, V.

    1995-05-01

    We report the first data for a new two-color HgCdTe infrared detector for use in large dual-band infrared focal plane arrays (IRFPAs). Referred to as the independently accessed back-to-back photodiode structure, this novel dual-band HgCdTe detector provides independent electrical access to each of two spatially collocated back-to-back HgCdTe photodiodes so that true simultaneous and independent detection of medium wavelength (MW, 3-5 μm) and long wavelength (LW, 8-12 μm) infrared radiation can be accomplished. This new dual-band detector is directly compatible with standard backside-illuminated bump-interconnected hybrid HgCdTe IRFPA technology. It is capable of high fill factor, and allows high quantum efficiency and BLIP sensitivity to be realized in both the MW and LW photodiodes. We report data that demonstrate experimentally the key features of this new dual-band detector. These arrays have a unit cell size of 100 x 100 μm2, and were fabricated from a four-layer p-n-N-P HgCdTe film grown in situ by metalorganic chemical vapor deposition on a CdZnTe substrate. At 80K, the MW detector cutoff wavelength is 4.5 μm and the LW detector cutoff wavelength is 8.0 μm. Spectral crosstalk is less than 3%. Data confirm that the MW and LW photodiodes are electrically and radiometrically independent.

  19. AIR QUALITY MANAGEMENT STRATEGIES IN URBAN AREAS: EFFECTS OF INTRODUCING HYBRID CARS IN MADRID AND BARCELONA METROPOLITAN AREAS (SPAIN)

    OpenAIRE

    Gonçalves, Maria; Guerrero, Pedro Jiménez; Baldasano, José M.

    2008-01-01

    Abstract: On-road traffic represents the largest source of pollutants’ emissions in urban areas. In southern Mediterranean countries exceedances of the NO2 and PM10 European air quality targets are observed in urban environments. Moreover the budget of urban emissions contributes to the emissions of O3 precursors (mainly NOx) in a region where the concentration of photochemical pollutants still remains a problem especially during summertime. Air quality modeling, used as a management...

  20. BiCMOS-integrated photodiode exploiting drift enhancement

    Science.gov (United States)

    Swoboda, Robert; Schneider-Hornstein, Kerstin; Wille, Holger; Langguth, Gernot; Zimmermann, Horst

    2014-08-01

    A vertical pin photodiode with a thick intrinsic layer is integrated in a 0.5-μm BiCMOS process. The reverse bias of the photodiode can be increased far above the circuit supply voltage, enabling a high-drift velocity. Therefore, a highly efficient and very fast photodiode is achieved. Rise/fall times down to 94 ps/141 ps at a bias of 17 V were measured for a wavelength of 660 nm. The bandwidth was increased from 1.1 GHz at 3 V to 2.9 GHz at 17 V due to the drift enhancement. A quantum efficiency of 85% with a 660-nm light was verified. The technological measures to avoid negative effects on an NPN transistor due to the Kirk effect caused by the low-doped I-layer epitaxy are described. With a high-energy collector implant, the NPN transit frequency is held above 20 GHz. CMOS devices are unaffected. This photodiode is suitable for a wide variety of high-sensitivity optical sensor applications, for optical communications, for fiber-in-the-home applications, and for optical interconnects.

  1. Fundamental Characteristics of a Pinned Photodiode CMOS Pixels

    NARCIS (Netherlands)

    Xu, Y.

    2015-01-01

    This thesis gives an insightful analysis of the pinned photodiode 4T CMOS pixel from three different aspects. Firstly, from the charge accumulated aspect, the PPD full well capacity and related parameters of influence are investigated such as the pinning voltage, and transfer gate potential barrier.

  2. Properties of the avalanche photodiodes for the CMS electromagnetic calorimeter

    CERN Document Server

    Deiters, K; Musienko, Yu V; Nicol, S; Patel, P; Renker, D; Reucroft, S; Rusack, R W; Sakhelashvili, T M; Swain, J D; Vikas, P

    2000-01-01

    The electromagnetic calorimeter of the CMS experiment at CERN's Large Hadron Collider will use 122400 avalanche photodiodes from Hamamatsu Photonics. The design of this APD type is the result of a long R&D program performed by Hamamatsu photonics and the CMS Collaboration. The APD parameters including the behavior under irradiation are discussed in view of our application. (4 refs).

  3. Intuitionistic hybrid logic

    DEFF Research Database (Denmark)

    Braüner, Torben

    2011-01-01

    Intuitionistic hybrid logic is hybrid modal logic over an intuitionistic logic basis instead of a classical logical basis. In this short paper we introduce intuitionistic hybrid logic and we give a survey of work in the area....

  4. Photosynthetic characteristics of three varieties of Lilium "Oriental Hybrids" in the central areas of Yunnan Province,China

    Institute of Scientific and Technical Information of China (English)

    Wei CHANG; Shuyun LI; Hong HU; Yayu FAN

    2008-01-01

    To understand the ecophysiological adapta-tion of Lilium "Oriental Hybrids", which are grown for their commercial bulbs, the gas exchange, leaf N and chlorophyll content of the three varieties were investigated in the central areas of the Yunnan Province. Among the three varieties, light-saturated photosynthetic rate at ambient CO2 (Amax) of Tiber was the highest, while that of Siberia was the lowest. The difference in the Amax was related to the carboxylation efficiency (CE), leaf mass per unit area and leaf N content per mass, which indicated that their photosynthetic capacity was influenced by the activity and/or the quantity of Rubisco. The three vari-eties had lower photosynthetic saturation points and pho-tosynthetic compensation points, but the photosynthetic rates were not decreased up to 2000 μmol.m-2s-1 of the light intensity. This indicates that the three varieties had broad adaptability to light intensity. There were signifi-cant differences in the photosynthetic optimum temper-ature among the three varieties. Siberia had the highest photosynthetic optimum temperature (25.5℃-34.9℃), and is likely to grow well in warm areas. Sorbonne had the lowest photosynthetic optimum temperature (19.3℃-25.6℃), and its growth is favored in cool areas. Tiber can maintain a high photosynthetic rate within a wide range of temperature. Therefore, Tiber is the most suitable variety for the climate in the central areas of the Yunnan Province, China.

  5. Hybrid microelectronic technology

    Science.gov (United States)

    Moran, P.

    Various areas of hybrid microelectronic technology are discussed. The topics addressed include: basic thick film processing, thick film pastes and substrates, add-on components and attachment methods, thin film processing, and design of thick film hybrid circuits. Also considered are: packaging hybrid circuits, automating the production of hybrid circuits, application of hybrid techniques, customer's view of hybrid technology, and quality control and assurance in hybrid circuit production.

  6. Linear array of photodiodes to track a human speaker for video recording

    Science.gov (United States)

    DeTone, D.; Neal, H.; Lougheed, R.

    2012-12-01

    Communication and collaboration using stored digital media has garnered more interest by many areas of business, government and education in recent years. This is due primarily to improvements in the quality of cameras and speed of computers. An advantage of digital media is that it can serve as an effective alternative when physical interaction is not possible. Video recordings that allow for viewers to discern a presenter's facial features, lips and hand motions are more effective than videos that do not. To attain this, one must maintain a video capture in which the speaker occupies a significant portion of the captured pixels. However, camera operators are costly, and often do an imperfect job of tracking presenters in unrehearsed situations. This creates motivation for a robust, automated system that directs a video camera to follow a presenter as he or she walks anywhere in the front of a lecture hall or large conference room. Such a system is presented. The system consists of a commercial, off-the-shelf pan/tilt/zoom (PTZ) color video camera, a necklace of infrared LEDs and a linear photodiode array detector. Electronic output from the photodiode array is processed to generate the location of the LED necklace, which is worn by a human speaker. The computer controls the video camera movements to record video of the speaker. The speaker's vertical position and depth are assumed to remain relatively constant- the video camera is sent only panning (horizontal) movement commands. The LED necklace is flashed at 70Hz at a 50% duty cycle to provide noise-filtering capability. The benefit to using a photodiode array versus a standard video camera is its higher frame rate (4kHz vs. 60Hz). The higher frame rate allows for the filtering of infrared noise such as sunlight and indoor lighting-a capability absent from other tracking technologies. The system has been tested in a large lecture hall and is shown to be effective.

  7. Novel radiation detectors based on multi pixels avalanche photodiodes: their status and perspectives of application

    International Nuclear Information System (INIS)

    Full text: Different versions of silicon avalanche photodiodes (APD), as well as new multi pixel avalanche photodiodes (MAPD) have been discussed widely during the last decade as an advanced photon counter for various applications. The sensitive area of a MAPD contains a matrix of independent micro-pixels with individual passive elements, which are created on a common silicon wafer. The individual passive elements provide local suppression of the avalanche process and discharge each micro-pixel to a common conducting or metal electrode. The advanced properties of a MAPD are connected with a local negative feedback (LNF) effect, which result in a local self-suppression of the avalanche gain due to individual passive elements with necessary resistivity and capacitance and, consequently, significantly reduces the influence of crystal non-uniformities on the characteristics of the avalanche multiplication process. The LNF effect is achieved by forming a specific matrix in the multilayer silicon structure which ensures a localisation of the avalanche processes and limits them in frames of independent micro-regions of 3-50 m in size, depending of the MAPD design. Thus, the micro-pixel structure in a MAPD results in a unique combination of high signal amplification and uniform avalanche multiplication over the entire sensitive area of the device. Each pixel has a sandwich like structure like a metal-resistive layer-semiconductor (MRS). This device is made in a very simple technology and it may demonstrate very good parameters in the red and near infrared regions of spectrum.

  8. Hybridization of Southern Hemisphere blue whale subspecies and a sympatric area off Antarctica: impacts of whaling or climate change?

    Science.gov (United States)

    Attard, Catherine R M; Beheregaray, Luciano B; Jenner, K Curt S; Gill, Peter C; Jenner, Micheline-Nicole; Morrice, Margaret G; Robertson, Kelly M; Möller, Luciana M

    2012-12-01

    Understanding the degree of genetic exchange between subspecies and populations is vital for the appropriate management of endangered species. Blue whales (Balaenoptera musculus) have two recognized Southern Hemisphere subspecies that show differences in geographic distribution, morphology, vocalizations and genetics. During the austral summer feeding season, the Antarctic blue whale (B. m. intermedia) is found in polar waters and the pygmy blue whale (B. m. brevicauda) in temperate waters. Here, we genetically analyzed samples collected during the feeding season to report on several cases of hybridization between the two recognized blue whale Southern Hemisphere subspecies in a previously unconfirmed sympatric area off Antarctica. This means the pygmy blue whales using waters off Antarctica may migrate and then breed during the austral winter with the Antarctic subspecies. Alternatively, the subspecies may interbreed off Antarctica outside the expected austral winter breeding season. The genetically estimated recent migration rates from the pygmy to Antarctic subspecies were greater than estimates of evolutionary migration rates and previous estimates based on morphology of whaling catches. This discrepancy may be due to differences in the methods or an increase in the proportion of pygmy blue whales off Antarctica within the last four decades. Potential causes for the latter are whaling, anthropogenic climate change or a combination of these and may have led to hybridization between the subspecies. Our findings challenge the current knowledge about the breeding behaviour of the world's largest animal and provide key information that can be incorporated into management and conservation practices for this endangered species. PMID:23137299

  9. Study and design of a hybrid wind-diesel-compressed air energy storage system for remote areas

    Energy Technology Data Exchange (ETDEWEB)

    Ibrahim, H.; Dimitrova, M. [Wind Energy TechnoCentre, 51 Chemin de la mine, C.P. 1300, Murdochville, Quebec (Canada); Wind Energy Research Laboratory (WERL), Universite du Quebec a Rimouski, 300, allee des Ursulines, Quebec (Canada); Anti-icing Materials International Laboratory (AMIL), Universite du Quebec a Chicoutimi, 555, boulevard de l' Universite, Quebec (Canada); Younes, R. [Wind Energy Research Laboratory (WERL), Universite du Quebec a Rimouski, 300, allee des Ursulines, Quebec (Canada); 3M Laboratory - Faculty of Engineering, Lebanese University, Beirut (Lebanon); Ilinca, A. [Wind Energy Research Laboratory (WERL), Universite du Quebec a Rimouski, 300, allee des Ursulines, Quebec (Canada); Perron, J. [Anti-icing Materials International Laboratory (AMIL), Universite du Quebec a Chicoutimi, 555, boulevard de l' Universite, Quebec (Canada)

    2010-05-15

    Remote areas around the world predominantly rely on diesel-powered generators for their electricity supply, a relatively expensive and inefficient technology that is responsible for the emission of 1.2 million tons of greenhouse gas (GHG) annually, only in Canada. Wind-diesel hybrid systems (WDS) with various penetration rates have been experimented to reduce diesel consumption of the generators. After having experimented wind-diesel hybrid systems (WDS) that used various penetration rates, we turned our focus to that the re-engineering of existing diesel power plants can be achieved most efficiently, in terms of cost and diesel consumption, through the introduction of high penetration wind systems combined with compressed air energy storage (CAES). This article compares the available technical alternatives to supercharge the diesel that was used in this high penetration wind-diesel system with compressed air storage (WDCAS), in order to identify the one that optimizes its cost and performances. The technical characteristics and performances of the best candidate technology are subsequently assessed at different working regimes in order to evaluate the varying effects on the system. Finally, a specific WDCAS system with diesel engine downsizing is explored. This proposed design, that requires the repowering of existing facilities, leads to heightened diesel power output, increased engine lifetime and efficiency and to the reduction of fuel consumption and GHG emissions, in addition to savings on maintenance and replacement cost. (author)

  10. Study and design of a hybrid wind-diesel-compressed air energy storage system for remote areas

    International Nuclear Information System (INIS)

    Remote areas around the world predominantly rely on diesel-powered generators for their electricity supply, a relatively expensive and inefficient technology that is responsible for the emission of 1.2 million tons of greenhouse gas (GHG) annually, only in Canada . Wind-diesel hybrid systems (WDS) with various penetration rates have been experimented to reduce diesel consumption of the generators. After having experimented wind-diesel hybrid systems (WDS) that used various penetration rates, we turned our focus to that the re-engineering of existing diesel power plants can be achieved most efficiently, in terms of cost and diesel consumption, through the introduction of high penetration wind systems combined with compressed air energy storage (CAES). This article compares the available technical alternatives to supercharge the diesel that was used in this high penetration wind-diesel system with compressed air storage (WDCAS), in order to identify the one that optimizes its cost and performances. The technical characteristics and performances of the best candidate technology are subsequently assessed at different working regimes in order to evaluate the varying effects on the system. Finally, a specific WDCAS system with diesel engine downsizing is explored. This proposed design, that requires the repowering of existing facilities, leads to heightened diesel power output, increased engine lifetime and efficiency and to the reduction of fuel consumption and GHG emissions, in addition to savings on maintenance and replacement cost.

  11. Performance of hybrid photon detector prototypes with 80% active area for the RICH counters of LHCb

    CERN Document Server

    Albrecht, E; Barber, G J; Bibby, J H; Campbell, M; Duane, A; Gys, Thierry; Montenegro, J; Piedigrossi, D; Schomaker, R; Snoeys, W; Wotton, S A; Wyllie, Ken H

    2000-01-01

    We report on the ongoing work towards a hybrid photon detector with integrated Si pixel readout for the ring imaging Cherenkov detectors of the LHCb experiment at the Large Hadron Collider at CERN. The photon detector is based on an electrostatically focussed image intensifier tube geometry where the image is de-magnified by a factor of ~5. The anode consists of a silicon pixel array, bump-bonded to a binary readout chip with matching pixel electronics. The performance of full-scale prototypes equipped with 61-pixel anodes and external analogue readout is presented. The average signal-to-noise ratio is ~11 with a peaking time of 1.2 mu s. The tube active-to-total surface ratio is 81.7%, which meets the LHCb requirements. The spatial precision is measured to be better than 90 mu m. A cluster of three such tubes has been installed in the LHCb RICH 1 prototype where Cherenkov gas rings have been successfully detected. Progress towards the encapsulation of new pixel electronics into a tube is also reported. In pa...

  12. Hybrid environmental robot: a tool for monitoring gas on flooded area; Robo ambiental hibrido: utilizacao como ferramenta para monitoramento de gases em areas alagadas

    Energy Technology Data Exchange (ETDEWEB)

    Goes, Emerson de; Cerqueira, Romulo Curty; Reis, Ney Robinson S. [PETROBRAS, Rio de Janeiro, RJ (Brazil)

    2008-07-01

    The impoundment of rivers for power generation leads to flooding of vast areas of land vegetation. Most submerged plants, die and enter into decomposition, releasing CO2 (carbon dioxide), CH4 (methane gas) into the air for many years. Scientists from around the world seek to clarify the processes to which these gases are submitted and their contributions to the process of global warming. Estimates suggest that the re-use of methane that passes through the turbines of these power plants could increase their energy potential by 75% and reduce their emissions of these gases by 65%, reducing their impact on global warming and resulting in carbon credits. To check the feasibility of using new processes and technologies to generate energy that recycles this biogas, operations for monitoring these biogases become routine tasks. The frequency is such that the exposure of humans to the risks of gas combustion, inherent to scenarios where these operations take place, becomes unacceptable. This motivates the use of robots in this activity. This paper presents the multi-mission platform Hybrid Environmental Robot, named 'Chico Mendes', as a tool for tracking gas emission and specially designed for flooded forest areas.

  13. Quantitative Analysis of Spectral Impacts on Silicon Photodiode Radiometers: Preprint

    Energy Technology Data Exchange (ETDEWEB)

    Myers, D. R.

    2011-04-01

    Inexpensive broadband pyranometers with silicon photodiode detectors have a non-uniform spectral response over the spectral range of 300-1100 nm. The response region includes only about 70% to 75% of the total energy in the terrestrial solar spectral distribution from 300 nm to 4000 nm. The solar spectrum constantly changes with solar position and atmospheric conditions. Relative spectral distributions of diffuse hemispherical irradiance sky radiation and total global hemispherical irradiance are drastically different. This analysis convolves a typical photodiode response with SMARTS 2.9.5 spectral model spectra for different sites and atmospheric conditions. Differences in solar component spectra lead to differences on the order of 2% in global hemispherical and 5% or more in diffuse hemispherical irradiances from silicon radiometers. The result is that errors of more than 7% can occur in the computation of direct normal irradiance from global hemispherical irradiance and diffuse hemispherical irradiance using these radiometers.

  14. Application of avalanche photodiodes for the measurement of actinides by alpha liquid scintillation counting

    International Nuclear Information System (INIS)

    Alpha emitters analysis using liquid scintillation spectroscopy is often used when sensitivity and fast samples preparation are the important points. A more extensive use of this technique is until now limited by its poor resolution compared to alpha particle spectroscopy with semiconductor detectors. To improve the resolution and thus promote this method for the measurement of actinides in environment, we have tested silicon avalanche photodiodes (APD) as new detectors for scintillation photons. The set-up consists of a large area avalanche photodiode (16 mm diameter) coupled to a thin vial containing alpha-emitters within a liquid scintillation cocktail. After optimization of several parameters like bias voltage, temperature, counting geometry and composition of the scintillating cocktail, energy resolutions have been found to be better than those obtained with standard photomultiplier tubes (PMT): 5% (200 keV FWHM) for 232Th and 4.2% (240 keV FWHM) for 236Pu. Our results show that the improvement is due to less fluctuations associated with light collection since the spatial response of APDs is more uniform than that of PMTs. The expected gain on quantum efficiency (80% for APDs instead of 25% for PMTs) is nullified by a corresponding increase on electronic noise and excess noise factor. Significant better results are foreseen by using green scintillators (450 - 550 nm wavelengths region) with larger Stokes-shift and blue-enhanced APDs which reach their maximum quantum efficiency in this region. (author)

  15. CsI(Tl) with photodiodes for identifying subsurface radionuclide contamination

    International Nuclear Information System (INIS)

    At the US Department of Energy's Hanford Site near Richland, Washington, underground radioactive contamination exists as the result of leaks, spills, and intentional disposal of waste products from plutonium-production operations. Characterizing these contaminants in preparation for environmental remediation is a major effort now in progress. In this paper, a cylindrical (15 x 61 mm) CsI(Tl) scintillation detector with two side-mounted photodiodes has been developed to collect spectral gamma-ray data in subsurface contaminated formations at the U.S. Department of Energy's Hanford Site. It operates inside small-diameter, thick-wall steel pipes pushed into the ground to depths up to 20 m by a cone penetrometer. The detector provides a rugged, efficient, magnetic-field-insensitive means for identifying gamma-ray-emitting contaminants (mainly 137Cs and 60Co). Mounting two 3 x 30-mm photodiodes end-to-end on a flat area along the detector's side provides efficient light collection over the length of the detector

  16. Signal and Noise Properties of Position-Sensitive Avalanche Photodiodes

    OpenAIRE

    Yang, Yongfeng; Wu, Yibao; Farrell, Richard; Dokhale, Purushottam A.; Shah, Kanai S.; Cherry, Simon R.

    2011-01-01

    After many years of development, position-sensitive avalanche photodiodes (PSAPDs) are now being incorporated into a range of scintillation detector systems, including those used in high-resolution small-animal PET and PET/MR scanners. In this work, the signal, noise, signal-to-noise ratio (SNR), flood histogram and timing resolution were measured for lutetium oxyorthosilicate (LSO) scintillator arrays coupled to PSAPDs ranging in size from 10–20 mm, and the optimum bias voltage and working t...

  17. Simulation of neutron radiation effects in silicon avalanche photodiodes

    OpenAIRE

    Osborne, Mark David

    2000-01-01

    This thesis was submitted for the degree of Doctor of Philosophy and awarded by Brunel University. A new one-dimensional device simulation package developed for the simulation of neutron radiatiol! effects in silicon avalanche photodiodes is described. The software uses a finite difference technique to solve the time-independent semiconductor equations across a user specified structure. Impact ionisation and illumination are included, allowing accurate simulation with minimal assumptions a...

  18. Numerical simulation of neutron radiation effects in avalanche photodiodes

    OpenAIRE

    Osborne, M.; Hobson, PR; Watts, SJ

    2000-01-01

    A new one-dimensional (1-D) device model developed for the simulation of neutron radiation effects in silicon avalanche photodiodes is described. The model uses a finite difference technique to solve the time-independent semiconductor equations across a user specified structure. The model includes impact ionization and illumination allowing accurate simulation with minimal assumptions. The effect of neutron radiation damage is incorporated via the introduction of deep acceptor levels subject ...

  19. A New Positioning Algorithm for Position-Sensitive Avalanche Photodiodes

    OpenAIRE

    Zhang, Jin; Olcott, Peter D.; Levin, Craig S

    2007-01-01

    We are using a novel position sensitive avalanche photodiode (PSAPD) for the construction of a high resolution positron emission tomography (PET) camera. Up to now most researchers working with PSAPDs have been using an Anger-like positioning algorithm involving the four corner readout signals of the PSAPD. This algorithm yields a significant non-linear spatial “pin-cushion” distortion in raw crystal positioning histograms. In this paper, we report an improved positioning algorithm, which com...

  20. Investigation of avalanche photodiodes radiation hardness for baryonic matter studies

    International Nuclear Information System (INIS)

    Modern avalanche photodiodes (APDs) with high gain are good device candidates for light readout from detectors applied in relativistic heavy-ion collision experiments. The results of the investigations of the APDs properties from Zecotek, Ketek, and Hamamatsu manufacturers after irradiation using secondary neutrons from U120M cyclotron facility at NPI of ASCR in Rez are presented. The results of the investigations can be used for the design of the detectors for the experiments at NICA and FAIR

  1. Radiation hard avalanche photodiodes for the CMS detector

    CERN Document Server

    Antunovic, Z; Deiters, K; Godinovic, N; Ingram, Q; Kuznetsov, A; Musienko, Y; Puljak, I; Renker, D; Reucroft, S; Rusack, R; Sakhelashvili, T M; Singovsky, A V; Soric, I; Swain, J

    2005-01-01

    The avalanche photodiodes, developed by Hamamatsu Photonics in collaboration with CMS, which are to be used to read out the lead tungstate crystals in the barrel part of the CMS electromagnetic calorimeter, are described. The procedures taken to ensure their long-term reliability in the radiation environment expected in CMS are outlined, as well as the studies made to verify the very high reliability required.

  2. Radiation Hard Avalanche Photo-Diodes for the CMS detector

    CERN Document Server

    Antunovic, Z; Deiters, K; Godinovic, N; Ingram, Q; Kuznetsov, A; Musienko, Y; Puljak, I; Reucroft, S; Rusack, R W; Sakhelashvili, T M; Singovsky, A V; Soric, I; Swain, J D

    2003-01-01

    The avalanche photo-diodes, developed by Hamamatsu Photonics in collaboration with CMS, which are to be used to read out the lead tungstate crystals in the barrel part of the CMS electromagnetic calorimeter, are described. The procedures taken to ensure their long term reliability in the radiation environment expected in CMS are outlined, as well as the studies made to verify the very high reliability required.

  3. Investigation of avalanche photodiodes radiation hardness for baryonic matter studies

    CERN Document Server

    Kushpil, V; Ladygin, V P; Kugler, A; Kushpil, S; Svoboda, O; Tlustý, P

    2015-01-01

    Modern avalanche photodiodes (APDs) with high gain are good device candidates for light readout from detectors applied in relativistic heavy ion collisions experiments. The results of the investigations of the APDs properties from Zecotek, Ketek and Hamamatsu manufacturers after irradiation using secondary neutrons from cyclotron facility U120M at NPI of ASCR in \\v{R}e\\v{z} are presented. The results of the investigations can be used for the design of the detectors for the experiments at NICA and FAIR.

  4. Time performances of a scintillator-photodiode system

    International Nuclear Information System (INIS)

    Time characteristics of the system with surface-barrier photodiode are investigated by calculations on the example of photodiodes made of semiconductor with electron conductivity. The forms of charge pulses of scintillator-surface-barrier photodiode system are obtained at different values of the relation of scintillator luminescence time constant to the time of electron flight and holes. It is shown, that the charge pulse form of the system with surface-barrier photodiode is determined by silicon specific resistance and the constant of the scintillator luminescence time. The pulse form also depends on the diode side, where scintillator optical coupling is carried out: either from the side of golden contact or back contact side. The time of charge pulse increasing is determined by luminescence time for great constants of the scintillator luminescence time. Besides, an essential difference is observed in the time of pulse increasing in the case of generating nonequilibrium carriers by photons of scintillations and in the case of uniform generation by the depth of sensitive region. It is noted, that during generating the current carriers from the side of back contact a time delay from generation moment up to the moment of pulse occurrence, is observed. It is explained by the fact, that nonequilibrium carriers are generated in this case in the region of weak field intensity, and therefore the rate of their movement is inessential. The value of the potential slightly changes with the coordinate change in this region, i.e. the charge on a collecting electrode is not practically guided up to a certain moment of time during the movement of nonequilibrium carriers

  5. Radiation effects in ultraviolet sensitive SiC photodiodes

    International Nuclear Information System (INIS)

    We tested SiC photodiodes with Co-60 gamma rays up to a total dose of 22 Mrad(SiC) and 32 MeV protons up to a fluence of 9 x 1012 cm-2. They showed a decrease in sensitivity of about 50% at a dose of 1 Mrad. The same decrease or somewhat less was observed during proton irradiations when the fluence is converted to an applied dose. (authors)

  6. Novel micropixel avalanche photodiodes (MAPD) with superhigh pixel density

    International Nuclear Information System (INIS)

    In many detectors based on scintillators the photomultiplier tubes (PMTs) are used as photodetectors. At present photodiodes are finding wide application. Solid state photodetectors allow operation in strong magnetic fields that are often present in applications, e.g., some calorimeters operating near magnets, combined PET and MRT, etc. The photon detection efficiency (PDE) of photodiodes may reach values a few times higher than that of PMTs. Also, they are rigid, compact and have relatively low operating voltage. In the last few years Micropixel Avalanche PhotoDiodes (MAPDs) have been developed and started to be used. The MAPD combines a lot of advantages of semiconductor photodetectors and has a high gain, which is close to that of the PMT. Yet, they have some disadvantages, and one of them is a limited dynamic range that corresponds to a total number of pixels. The novel deep microwell MAPD with high pixel density produced by Zecotek Company partially avoids this disadvantage. In this paper characteristics of these photodetectors are presented in comparison with the PMT characteristics. The results refer to measurements of the gain, PDE, cross-talks, photon counting and applications: beam test results of two different 'Shashlyk' EM calorimeters for COMPASS (CERN) and NICA-MPD (JINR) with the MAPD readout and a possibility of using the MAPD in PET

  7. Vertically illuminated TW-UTC photodiodes for terahertz generation

    Science.gov (United States)

    Barrientos Z., Claudio M.; Calle G., Victor H.; Alvarez, Jaime A.; Mena, F. Patricio; Vukusic, Josip; Stake, Jan; Michael, Ernest A.

    2012-09-01

    More efficient and powerful continuous-wave photonic mixers as terahertz sources are motivated by the need of more versatile local oscillators for submillimeter/terahertz receiver systems. Uni-Travelling Carrier (UTC) photodiodes are very prospective candidates for reaching this objective, but so far only have been reported as lumped-elements or as edge-illuminated optical-waveguide travelling-wave (TW) devices. To overcome the associated power limitations of those implementations, we are developing a novel implementation of the UTC photodiodes which combines a travelingwave photomixer with vertical velocity-matched illumination in a distributed structure. In this implementation called velocity-matched travelling-wave uni-travelling carrier photodiode, it is possible to obtain in-situ velocity matching of the beat-fringes of the two angled laser beams with the submm/THz-wave on the stripline. In this way, minimum frequency roll-off is achieved by tuning the angle between the two laser beams. A first design of these TW-UTC PDs from our Terahertz Photonics Laboratory at University of Chile has been micro-fabricated at the MC2 cleanroom facility at Chalmers Technical University.

  8. Pilot solar hybrid power station in rural area, Rompin, Pahang, Malaysia

    International Nuclear Information System (INIS)

    Malaysia has considerable number of widely deployed small rural area. These hamlets are very much associated with Orang Asli residents. They get their source of energy by candle or kerosene light while some richer community can afford a generator set. The usual or normal system using solar as a source for electricity at rural area is standalone system for each house. As for this project, a pilot centralized solar power station will be the source of electricity to light up the fifteen houses at Kampung Denai, Rompin, Pahang, Malaysia. This system will be the first ever built for the orang asli settlement at Pahang. The objectives of this project are to design and install the solar power station at remote location and to develop standard design of stand-alone solar power station suitable for Malaysia. Orang Asli residents at Kampung Denai was chosen because there is a school for the Orang Asli children. Moreover, the remote communities are living in stratification, which makes electrical wiring easier. Furthermore, the remote area is far from the last transmission line and cumbersome to bring diesel through the rough and unpredictable land road. The main domestic energy is for residential purposes (e.g. small lighting unit, radio, television, video, etc). The generator capacity is 18.6 kW. The solar sizing was done both for the home and school appliances at Kampung Denai. The maximum demand measured was 4195.35 kW. The pilot centralized solar power station consists of 10 kW photovoltaic panels, 10 kW inverter, 150 kWh battery and other balance of system. A generator set with capacity of 12.5 kVA is installed for back up and during monsoon season. This paper will present status of the system, operational and maintenance issues, load profile of the solar power station and economics and system design of the whole system

  9. Use of silicon photodiode optically connected to scintillator in measurement of gamma dose rates

    Energy Technology Data Exchange (ETDEWEB)

    Gilar, O. (Tesla, Premysleni (Czechoslovakia). Vyzkumny Ustav Pristroju Jaderne Techniky); Petr, I. (Ceske Vysoke Uceni Technicke, Prague (Czechoslovakia). Fakulta Jaderna a Fysikalne Inzenyrska)

    1984-06-01

    Contributing to the signal which is produced in the photodiode by direct interaction with radiation may also be light photons produced by scintillation in the scintillator which is in optical contact with the photodiode. The scintillator/photodiode combination may increase sensitivity in comparison with the photodiode alone. The energy dependence of the detector will change according to the scintillator material and size. The configuration is described of a detector with CsI(Tl) scintillator. The detector is suitable for medium and large dose rates, the limiting factor for measuring small dose rates is the intensity of the photodiode dark current and its temperature dependence. A higher sensitivity of the designed detector configuration may be achieved by selecting a scintillator with a more suitable emission spectrum or by technological modifications of the photodiode.

  10. On possibilities of application of Miller formula for determination of parameters of Micropixel Avalanche Photodiodes

    CERN Document Server

    Sadygov, Z; Akhmedov, G; Akhmedov, F; Mukhtarov, R; Sadygov, A; Titov, A; Zhezher, V

    2014-01-01

    Miller formula modified to take into account voltage drop on serial resistor of an avalanche photodiode is considered. It is proven by experimental data that modified Miller formula can describe operation of both regular and micropixel avalanche photodiodes with good enough precision. It is shown that operation parameters of the devices can be determined using a linear extrapolation of the voltage-current curve for both regular avalanche photodiode and the one operating in Geiger mode.

  11. Guided-wave photodiode using through-absorber quantum-well-intermixing and methods thereof

    Energy Technology Data Exchange (ETDEWEB)

    Skogen, Erik J.

    2016-10-25

    The present invention includes a high-speed, high-saturation power detector (e.g., a photodiode) compatible with a relatively simple monolithic integration process. In particular embodiments, the photodiode includes an intrinsic bulk absorption region, which is grown above a main waveguide core including a number of quantum wells (QWs) that are used as the active region of a phase modulator. The invention also includes methods of fabricating integrated photodiode and waveguide assemblies using a monolithic, simplified process.

  12. Characterization methods for silicon photodiode and silicon sub-surface properties

    OpenAIRE

    Haapalinna, Atte

    2004-01-01

    This thesis considers the characterization of silicon photodiode and the applications of silicon photodiodes in precision metrology, and some aspects of the silicon material characterizations. Such material characterizations are required in the process of semiconductor device manufacturing, one example of which is the silicon photodiode manufacturing. The motivation for the research on radiometry reported in this thesis has been the development of optical metrology at the Helsinki Univers...

  13. High power high linearity waveguide photodiodes : measurement, modeling, and characterization for analog optical links

    OpenAIRE

    Draa, Meredith Nicole

    2010-01-01

    As analog optical links continue to mature and fulfill communication needs, the requirements for output power and linearity continue to be a main focus. The receiver end of a link is a limiting factor for such applications, and therefore photodiode research continues to be at the forefront of these issues. In order to compete, photodiodes need to be able to maintain high bandwidth, high power and high linearity simultaneously. The study of photodiodes for analog links has focused on linearity...

  14. Solution-based PbS photodiodes, integrable on ROIC, for SWIR detector applications

    OpenAIRE

    Heves, Emre; Öztürk, Cem; Ozturk, Cem; Özgüz, Volkan Hüsnü; Ozguz, Volkan Husnu; Gürbüz, Yaşar; Gurbuz, Yasar

    2013-01-01

    Photodiodes, based on PbS colloidal quantum dots (CQD), are realized on both silicon substrates and the replicas of the read-out integrated circuits (ROICs) to demonstrate the first, fully integrated focal plane arrays. Careful optimization of PbS CQD film formation and ligand exchange process, together with optimized process steps, resulted in high performance, monolithically integrable photodiodes. High quantum efficiencies of 32% are achieved for photodiodes on Si substrates and high respo...

  15. Studies of neutron irradiation of avalanche photodiodes using sup 2 sup 5 sup 2 Cf

    CERN Document Server

    Musienko, Y; Ruuska, D; Swain, J D

    2000-01-01

    Results on the radiation hardness of photodiodes to fast neutrons are presented. Four photodiodes (three avalanche photodiodes from two manufacturers, and one PIN photodiode) were exposed to neutrons from a sup 2 sup 5 sup 2 Cf source at Oak Ridge National Laboratory. The effects of this radiation on many parameters such as gain, intrinsic dark current, quantum efficiency, noise, capacitance, and voltage and temperature coefficients of the gain for these devices for fluences up to approx 2x10 sup 1 sup 3 neutrons/cm sup 2 are shown and discussed. While degradation of APDs occurred during neutron irradiation, they remained photosensitive devices with gain.

  16. A Novel Photodiode for Reflectance Pulse Oximetry in low-power applications

    DEFF Research Database (Denmark)

    Haahr, Rasmus Grønbek; Duun, Sune; Birkelund, Karen;

    2007-01-01

    The amount of light collected is crucial for low-power applications of pulse oximetry. In this work a novel ring-shaped backside photodiode has been developed for a wearable reflectance pulse oximeter. The photodiode is proven to work with a dual LED with wavelengths of 660 nm and 940 nm. For the......The amount of light collected is crucial for low-power applications of pulse oximetry. In this work a novel ring-shaped backside photodiode has been developed for a wearable reflectance pulse oximeter. The photodiode is proven to work with a dual LED with wavelengths of 660 nm and 940 nm...

  17. Combination of a silicon photodiode and a scintillator as a dose rate detector

    Energy Technology Data Exchange (ETDEWEB)

    Gilar, O. (Tesla, Premysleni (Czechoslovakia). Vyzkumny Ustav Pristroju Jaderne Techniky); Petr, I. (Ceske Vysoke Uceni Technicke, Prague (Czechoslovakia). Fakulta Jaderna a Fysikalne Inzenyrska)

    1985-03-16

    The combination of a silicon photodiode adjacent to a CsI(Tl) scintillator as a detector of ..gamma..-rays is described. Theoretical conclusions are verified by an experiment and prove that the photodiode absorption spectrum as well as the quantum efficiency can be varied by an appropriate photodiode technology. The contribution of scintillation photons emitted by the CsI(Tl) scintillator in the photon field can enhance the total photocurrent more than an order of magnitude compared to the current response of the photodiode alone, placed in a photon field of equal exposure rate.

  18. 3D integration of Geiger-mode avalanche photodiodes aimed to very high fill-factor pixels for future linear colliders 

    CERN Document Server

    Vilella, E; Dieguez, A

    2013-01-01

    This paper presents an analysis of the maximum achievable fill-factor by a pixel detector of Geiger-mode avalanche photodiodes with the Chartered 130 nm/Tezzaron 3D process. The analysis shows that fillfactors between 66% and 96% can be obtained with different array architectures and a time-gated readout circuit of minimum area. The maximum fill-factor is achieved when the two-layer vertical stack is used to overlap the non-sensitive areas of one layer with the sensitive areas of the other one. Moreover, different sensor areas are used to further increase the fill-factor. A chip containing a pixel detector of the Geigermode avalanche photodiodes and aimed to future linear colliders has been designed with the Chartered 130 nm/Tezzaron 3D process to increase the fill-factor.

  19. ESTIMATION OF DROUGHT TOLERANCE OF LOCAL AND PIONEER TOP COMERCIAL CORN HYBRIDS TESTED IN DIFFERENT PEDO-CLIMATIC AREAS FROM SOUTH OF ROMANIA

    OpenAIRE

    Anghelus FIERBINTEANU; Marina UBERTI; Gabriela VALSAN; Valentin MANDACHE; Alexandru CHIPER; Gabriela-Mariana STOICA; Viorel DINCA

    2012-01-01

    The purpose of the study was the estimation of the behavior of top commercial corn hybrids tested in 5 different pedo-climatic areas from drought tolerance perspective. The study was carried out in 2009, 2010 and 2011 in 5locations: Valu lui Traian,Constanta county; Sarichioi, Tulcea county; Fundulea, Calaraşi county; Cazasu, Brăila county and Caracal Olt county. These locations were selected as being representative for corn crop. Eight corn hybrids (F475M, Olt, Paltin, F376 from Fundulea In...

  20. Epitaxial InGaAsP/InP photodiode for registration of InP scintillation

    Science.gov (United States)

    Luryi, S.; Kastalsky, A.; Gouzman, M.; Lifshitz, N.; Semyonov, O.; Stanacevic, M.; Subashiev, A.; Kuzminsky, V.; Cheng, W.; Smagin, V.; Chen, Z.; Abeles, J. H.; Chan, W. K.; Shellenbarger, Z. A.

    2010-10-01

    Operation of semiconductor scintillators requires optically tight integration of the photoreceiver system on the surface of the scintillator slab. We have implemented an efficient and fast quaternary InGaAsP pin photodiode, epitaxially grown on the surface of an InP scintillator wafer and sensitive to InP luminescence. The diode is characterized by an extremely low room-temperature dark current, about 1 nA/cm2 at the reverse bias of 2 V. The low leakage makes possible a sensitive readout circuitry even though the diode has a large area (1×1 mm2) and therefore large capacitance (50 pF). Results of electrical, optical and radiation testing of the diodes are presented. Detection of individual α-particles and γ-photons is demonstrated.

  1. InAlAs/InGaAs avalanche photodiode arrays for free space optical communication.

    Science.gov (United States)

    Ferraro, Mike S; Clark, William R; Rabinovich, William S; Mahon, Rita; Murphy, James L; Goetz, Peter G; Thomas, Linda M; Burris, Harris R; Moore, Christopher I; Waters, William D; Vaccaro, Kenneth; Krejca, Brian D

    2015-11-01

    In free space optical communication, photodetectors serve not only as communications receivers but also as position sensitive detectors (PSDs) for pointing, tracking, and stabilization. Typically, two separate detectors are utilized to perform these tasks, but recent advances in the fabrication and development of large-area, low-noise avalanche photodiode (APD) arrays have enabled these devices to be used both as PSDs and as communications receivers. This combined functionality allows for more flexibility and simplicity in optical system design without sacrificing the sensitivity and bandwidth performance of smaller, single-element data receivers. This work presents the development of APD arrays rated for bandwidths beyond 1 GHz with measured carrier ionization ratios of approximately 0.2 at moderate APD gains. We discuss the fabrication and characterization of three types of APD arrays along with their performance as high-speed photodetectors. PMID:26560607

  2. Hard disk drive based microsecond x-ray chopper for characterization of ionization chambers and photodiodes

    Science.gov (United States)

    Müller, O.; Lützenkirchen-Hecht, D.; Frahm, R.

    2015-03-01

    A fast X-ray chopper capable of producing ms long X-ray pulses with a typical rise time of few μs was realized. It is ideally suited to investigate the temporal response of X-ray detectors with response times of the order of μs to ms, in particular, any kind of ionization chambers and large area photo diodes. The drive mechanism consists of a brushless DC motor and driver electronics from a common hard disk drive, keeping the cost at an absolute minimum. Due to its simple construction and small dimensions, this chopper operates at home lab based X-ray tubes and synchrotron radiation sources as well. The dynamics of the most important detectors used in time resolved X-ray absorption spectroscopy, namely, ionization chambers and Passivated Implanted Planar Silicon photodiodes, were investigated in detail. The results emphasize the applicability of this X-ray chopper.

  3. Hard disk drive based microsecond x-ray chopper for characterization of ionization chambers and photodiodes

    Energy Technology Data Exchange (ETDEWEB)

    Müller, O., E-mail: o.mueller@uni-wuppertal.de; Lützenkirchen-Hecht, D.; Frahm, R. [Bergische Universität Wuppertal, Gaußstraße 20, Wuppertal 42119 (Germany)

    2015-03-15

    A fast X-ray chopper capable of producing ms long X-ray pulses with a typical rise time of few μs was realized. It is ideally suited to investigate the temporal response of X-ray detectors with response times of the order of μs to ms, in particular, any kind of ionization chambers and large area photo diodes. The drive mechanism consists of a brushless DC motor and driver electronics from a common hard disk drive, keeping the cost at an absolute minimum. Due to its simple construction and small dimensions, this chopper operates at home lab based X-ray tubes and synchrotron radiation sources as well. The dynamics of the most important detectors used in time resolved X-ray absorption spectroscopy, namely, ionization chambers and Passivated Implanted Planar Silicon photodiodes, were investigated in detail. The results emphasize the applicability of this X-ray chopper.

  4. Identification of radiation induced dark current sources in pinned photodiode CMOS image sensors

    International Nuclear Information System (INIS)

    This paper presents an investigation of Total Ionizing Dose (TID) induced dark current sources in Pinned Photodiodes (PPD) CMOS Image Sensors based on pixel design variations. The influence of several layout parameters is studied. Only one parameter is changed at a time enabling the direct evaluation of its contribution to the observed device degradation. By this approach, the origin of radiation induced dark current in PPD is localized on the pixel layout. The PPD peripheral shallow trench isolation does not seem to play a role in the degradation. The PPD area and a transfer gate contribution independent of the pixel dimensions appear to be the main sources of the TID induced dark current increase. This study also demonstrates that applying a negative voltage on the transfer gate during integration strongly reduces the radiation induced dark current. (authors)

  5. Breakdown voltage in thin III-V avalanche photodiodes

    Science.gov (United States)

    Saleh, Mohammad A.; Hayat, Majeed M.; Kwon, Oh-Hyun; Holmes, Archie L.; Campbell, Joe C.; Saleh, Bahaa E. A.; Teich, Malvin C.

    2001-12-01

    The dead-space multiplication theory of Hayat and Saleh [J. Lightwave Technol. 10, 1415 (1992)], in conjunction with the multiplication-width-independent ionization-coefficient model developed by Saleh et al. [IEEE Trans. Electron Devices 47, 625 (2000)], are shown to accurately predict breakdown voltages for thin avalanche photodiodes of GaAs, InP, In0.52Al0.48As, and Al0.2Ga0.8As, over a broad range of device widths. The breakdown voltage is determined from the analytical expression for the impulse-response-function decay rate.

  6. Laser and photodiode environmental evaluation for the Versatile Link project

    CERN Document Server

    Troska, Jan; Detraz, S; Olanterä, L; Stejskal, P; Sigaud, C; Soos, C; Vasey, F

    2013-01-01

    We summarize the results obtained in a series of radiation tests of candidate laser and photodiode components for use in the Versatile Transceiver (VTRx), the front-end component of the Versatile Link. We have carried out radiation testing at a full spectrum of sources (neutrons, pions, gammas) and can now compare the results and show that the range of components that meet the radiation tolerance requirements is rather large. In addition, devices have been operated in a high magnetic field to qualify them for use in (HL-) LHC detectors.

  7. Correcting for accidental correlations in saturated avalanche photodiodes

    CERN Document Server

    Grieve, James A; Tang, Zhongkan; Ling, Alexander

    2015-01-01

    In this paper we present a high-level numerical model for estimating rates of accidental correlations between a pair of passively quenched Geiger mode avalanche photodiodes operating in the saturated regime. By considering the recovery time of both the diodes and the detection circuit we introduce the concept of an "effective duty cycle" and show that it may be estimated by numeric simulation. The impact of effective duty cycle on the observed accidental rate is examined and we demonstrate that the updated model leads to an improved correction factor in actual experiments. This will improve the signal-to-noise ratio in applications depending on correlation measurements.

  8. Displacement damage effects in pinned photodiode CMOS image sensors

    International Nuclear Information System (INIS)

    This paper investigates the effects of displacement damage in Pinned Photodiode (PPD) CMOS Image Sensors (CIS) using proton and neutron irradiations. The DDD ranges from 12 TeV/g to 1.2 * 106 TeV/g. Particle fluence up to 5 * 1014 n.cm-2 is investigated to observe electro-optic degradation in harsh environments. The dark current is also investigated and it would appear that it is possible to use the dark current spectroscopy in PPD CIS. The dark current random telegraph signal is also observed and characterized using the maximum transition amplitude. (authors)

  9. Double Screening Tests of the CMS ECAL Avalanche Photodiodes

    CERN Document Server

    Deiters, Konrad; Renker, Dieter; Sakhelashvili, Tariel; Britvitch, Ilia; Kuznetsov, Andrey; Musienko, Yuri; Singovsky, Alexander

    2005-01-01

    Specially developed avalanche photo-diodes (APDs) will be used to measure the light from the 61,200 lead tungstate crystals in the barrel part of the CMS electromagnetic calorimeter. To ensure the reliability over the lifetime of the detector, every APD is screened by irradiation and burn-in before it is accepted for CMS. As part of the establishment of the screening procedure and to determine its effectiveness, a large number of APDs were screened twice. The results of these tests suggest that the required reliability will be achieved.

  10. Innovative Detection System of Ochratoxin A by Thin Film Photodiodes

    OpenAIRE

    Riccardo Scipinotti; Alessandra Ricelli; Augusto Nascetti; Corrado Fanelli; Gianpiero de Cesare; Domenico Caputo

    2007-01-01

    In this work we present, for the first time, a rapid, compact and innovative method for detection of Ochratoxin A (OTA) based on hydrogenated amorphous silicon (a-Si:H) sensors. 2 μl of acidified toluene containing OTA at different concentrations were spotted on the silica side of a High Performance Thin Layer Cromatography plate and aligned with a a-Si:H p-i-n photodiode deposited by Plasma Enhanced Chemical Vapor Deposition on a different glass substrate. As an UV radiation excites the myco...

  11. Development of a testbed for flexible a-Si:H photodiode sensing arrays

    Science.gov (United States)

    Dominguez, Alfonso; Kunnen, George; Vetrano, Michael; Smith, Joseph; Marrs, Michael; Allee, David R.

    2013-05-01

    Large area, flexible sensing arrays for imaging, biochemical sensing and radiation detection are now possible with the development of flexible active matrix display technology. In particular, large-area flexible imaging arrays can provide considerable advancement in defense and security industries because of their inherent low manufacturing costs and physical plasticity that allows for increased adaptability to non-planar mounting surfaces. For example, a flexible array of photodetectors and lenslets formed into a cylinder could image simultaneously with a 360 degree view without the need for expensive bulky optics or a gimbaled mount. Here we report the design and development of a scalable 16x16 pixel testbed for flexible sensor arrays using commercial-off-the-shelf (COTS) parts and demonstrate the capture of a shadow image with an array of photodiodes and active pixel sensors on a plastic substrate. The image capture system makes use of an array of low-noise, InGaZnO active pixel amplifiers to detect changes in current in 2.4 μm-thick reverse-biased a-Si:H PIN diodes. A thorough characterization of the responsivity, detectivity, and optical gain of an a- Si:H photodiode is also provided. At the back end, analog capture circuitry progressively scans the array and constructs an image based on the electrical activity in each pixel. The use of correlated-double-sampling to remove fixed pattern noise is shown to significantly improve spatial resolution due to process variations. The testbed can be readily adapted for the development of neutron, alpha-particle, or X-ray detection arrays given an appropriate conversion layer.

  12. A Novel Ring Shaped Photodiode for Reflectance Pulse Oximetry in Wireless Applications

    DEFF Research Database (Denmark)

    Duun, Sune; Haahr, Rasmus Grønbek; Birkelund, Karen;

    2007-01-01

    We present a pulse oximeter for use in home-care applications in a sticking patch with integrated electronics. The core in the pulse oximeter is a large ring shaped backside silicon pn photodiode placed around a Ledtronics dual LED with wavelengths of 660 nm and 940 nm. The concentric photodiode...

  13. Performance Analysis of Si-Based Ultra-Shallow Junction Photodiodes for UV Radiation Detection

    NARCIS (Netherlands)

    Shi, L.

    2013-01-01

    This thesis presents a performance investigation of newly-developed ultra-shallow junction photodiodes (PureB-diodes) for ultraviolet (UV) radiation detection. The photodiodes are fabricated by pure boron chemical vapor deposition (PureB CVD) technology, which can provide nanometer-thin boron cappin

  14. Study on the formation of current characteristics of a silicon photodiode with rectifying barriers

    Directory of Open Access Journals (Sweden)

    Karimov A. V.

    2013-02-01

    Full Text Available The article presents the results of studies on silicon photodiode double-barrier structure with back-to-back rectifying junctions «metal — semiconductor» in the photodiode and photovoltaic modes. Such structures are of interest for the development of input devices for weak optical signals.

  15. Fast microprogrammed fields sensing with photodiode matrix array

    International Nuclear Information System (INIS)

    For higher speed image processing, it is better to output solely lines that store information and to skip the others than to read out all the pixels and then to select out large store of video data. In order to have the two-dimensional spectroscopic measurments timeresolved, the principle of video data reduction was realized by means of modular camera with photodiode matrix. A Reticon matrix array of 256 x 256 photodiodes with access and reset switches as well as x and y readout shift registers on chip has been chosen. Camera control and programmed row clock operation, as well as remote programming and transfer of control words to the camera is described. The analogue video data that are controlled by this system are converted by a 10 MHz A/D converter into 12 bit-words. Using a very rapid accumulation device, a programmed number of digitized pixel data of the same row but of different neighbouring columns can be added on-line. This will limit the volume of data and raise the signal-to-noise ratio but decrease the local resolution

  16. Linearity of P-N junction photodiodes under pulsed irradiation

    CERN Document Server

    Stuik, R

    2002-01-01

    The dependence of the sensitivity on the radiation pulse length for a P-N junction photodiode has been investigated over an extended range of pulse lengths, from 170 ns to 1.2 ms. The power incident on the diode surface was varied between 1.6 and 118 mW. A novel method was used to generate the light pulses with variable length, while keeping the temporal pulse shape and the intensity constant. The method consists of using a rotating mirror in combination with a DC light source, in our case at 633 and 532 nm. In this way, the pulse shape only depends on the geometry of the setup, with the pulse length solely determined by the rotation frequency of the mirror. No further calibration is needed for determination of the pulse intensity and shape. Accuracies obtained are better than 2%, mainly determined by instabilities in the setup. The sensitivity of an IRD AXUV-100 photodiode was studied, both with and without a reverse bias voltage applied. At unbiased conditions and irradiation levels well below the saturatio...

  17. Modeling Scintillator-photodiodes As Detectors For Megavoltage Computed Tomography

    CERN Document Server

    Monajemi, T T

    2004-01-01

    The imaging characteristics of a cadmium tungstate, CdWO 4, detector was modeled and measured in 1.25 MeV and 6 MV beams. The detector includes eight CdWO4 crystals, each 2.75 x 8 x 10 mm 3, bonded together and in contact with sixteen silicon photodiodes such that, each crystal covers two photodiodes. The characteristics investigated are the frequency dependent modulation transfer function, MTF (f), noise power spectrum, NPS (f), and detective quantum efficiency, DQE (f). The tools used in modeling these characteristics include the Monte Carlo simulation codes, EGSnrc and DETECT2000, for high energy and optical photons, respectively. The DQE of the detector was found to be approximately constant at 26% and 19% for 1.25 MeV and 6 MV photons up to a spatial frequency of 0.16 cycles/mm, respectively. Due to pulse to pulse fluctuations in the output of the linear accelerator, the NPS(f) and DQE(f) were not verified experimentally in a 6 MV beam.

  18. Metal-diamond semiconductor interface and photodiode application

    International Nuclear Information System (INIS)

    Carrier transport mechanism at p-diamond/metal interfaces are studied by analyzing dependencies of specific contact resistance (ρc) on measurement temperature and acceptor concentration (NA). A variety of metals, such as Ti, Mo, Cr (carbide-forming metals), Pd, and Co (carbon-soluble metals), are deposited on boron-doped polycrystalline diamond layers, and the ρc values are measured by a transmission line method. Thermal annealing which produces metallurgical reactions between diamond and metal reduces Schottky barrier heights of the contact metals to a constant value. It is found that use of a metal compound which does not react with diamond at elevated temperatures is the key to develop the thermally stable Schottky contact material for p-diamond. Along this guideline, we test the suitability of tungsten carbide (WC) and hafnium nitride (HfN) as thermally stable Schottky contacts to develop a thermally stable, deep-ultraviolet (DUV) photodiode using a boron-doped homoepitaxial p-diamond epilayer. Thermal annealing at 500 deg. C improves the rectifying current-voltage characteristics of the photodiode, resulting in the excellent thermal stability. The discrimination ratio between DUV and visible light is measured to be as large as 106 at a reverse bias voltage as small as 2 V, and it remains almost constant after annealing at 500 deg. C for 5 h. Metal carbide and nitride contacts for diamond are thus useful for developing a thermally stable diamond DUV photodetector

  19. A Rule-Based Energy Management Strategy for a Plug-in Hybrid School Bus Based on a Controller Area Network Bus

    OpenAIRE

    Jiankun Peng; Hao Fan; Hongwen He; Deng Pan

    2015-01-01

    This paper presents a rule-based energy management strategy for a plug-in hybrid school bus (PHSB). In order to verify the effectiveness and rationality of the proposed energy management strategy, the powertrain and control models were built with MATLAB/Simulink. The PHSB powertrain model includes an engine model, ISG (integrated started and generator) model, drive motor model, power battery packs model, driver model, and vehicle longitudinal dynamics model. To evaluate the controller area ne...

  20. Effect of Fabric Cover and Pore Area Distribution of Carbon/Stainless Steel/Polypropylene Hybrid Yarn-Woven Fabric on Electromagnetic Shielding Effectiveness

    Science.gov (United States)

    Krishnasamy, Jagatheesan; Ramasamy, Alagirusamy; Das, Apurba; Basu, Ananjan

    2016-06-01

    The electromagnetic shielding behavior of fabrics woven with carbon/stainless steel/polypropylene (C/SS/PP) hybrid yarns were investigated in the frequency range of 300 kHz to 1.5 GHz. This study mainly emphasizes the electromagnetic shielding behavior of C/SS/PP hybrid yarn fabric and the effect of different fabric parameters such as pick density, fabric architecture and number of fabric layers on shielding effectiveness (SE) of fabrics with C/SS/PP hybrid yarns. The SE of fabric samples were tested by a vector network analyzer using a coaxial transmission line tester. In addition, surface images of different fabric structures were examined to appreciate the effect of yarn floats on the shielding behavior of fabrics. From the SE test, it was observed that an increase in pick density increases the SE of C/SS/PP hybrid yarn fabric due to addition of carbon and SS content in the fabric. Besides, the fabric cover and pore area distribution are also changed for varying pick densities. Essentially, a fabric's architecture plays an important role in the fabric cover and pore area distribution. The one-end float (1/1 plain) fabric of 6.3 ppcm provides higher shielding of 88.44 dB than a 4-end (4/1 twill) or 7-end float (8-end satin) fabrics of 6.3 ppcm. Moreover, an increase in the number of fabric layers also improves the SE of fabrics. The developed C/SS/PP hybrid yarn fabric can be used for shielding wireless transmissions, radar transmissions and for shielding panels.

  1. Load Frequency Control of a Two-Area Thermal-Hybrid Power System Using a Novel Quasi-Opposition Harmony Search Algorithm

    Science.gov (United States)

    Mahto, Tarkeshwar; Mukherjee, V.

    2016-09-01

    In the present work, a two-area thermal-hybrid interconnected power system, consisting of a thermal unit in one area and a hybrid wind-diesel unit in other area is considered. Capacitive energy storage (CES) and CES with static synchronous series compensator (SSSC) are connected to the studied two-area model to compensate for varying load demand, intermittent output power and area frequency oscillation. A novel quasi-opposition harmony search (QOHS) algorithm is proposed and applied to tune the various tunable parameters of the studied power system model. Simulation study reveals that inclusion of CES unit in both the areas yields superb damping performance for frequency and tie-line power deviation. From the simulation results it is further revealed that inclusion of SSSC is not viable from both technical as well as economical point of view as no considerable improvement in transient performance is noted with its inclusion in the tie-line of the studied power system model. The results presented in this paper demonstrate the potential of the proposed QOHS algorithm and show its effectiveness and robustness for solving frequency and power drift problems of the studied power systems. Binary coded genetic algorithm is taken for sake of comparison.

  2. Si/Ge photodiodes for coherent and analog communication

    Science.gov (United States)

    Piels, Molly

    High-speed photodiodes have diverse applications in wireless and fiber communications. They can be used as output stages for antenna systems as well as receivers for fiber optic networks. Silicon is an attractive substrate material for photonic components for a number of reasons. Low cost manufacturing in CMOS fabrication facilities, low material loss at telecommunications wavelengths, and relatively simple co-packaging with electronics are all driving interest in silicon photonic devices. Since silicon does not absorb light at telecommunications wavelengths, photodetector fabrication requires the integration of either III-V materials or germanium. Recent work on germanium photodetectors has focused on low-capacitance devices suitable for integration with silicon electronics. These devices have excellent bandwidth and efficiency, but have not been designed for the levels of photocurrent required by coherent and analog systems. This thesis explores the design, fabrication, and measurement of photodetectors fabricated on silicon with germanium absorbing regions for high speed and high power performance. There are numerous design trade-offs between speed, efficiency, and output power. Designing for high bandwidth favors small devices for low capacitance. Small devices require abrupt absorption profiles for good efficiency, but design for high output power favors large devices with dilute absorption. The absorption profile can be controlled by the absorber layer thickness, but this will also affect the bandwidth and power handling. This work quantifies the trade-offs between high speed, high efficiency, and high power design. Intrinsic region thickness and absorption profile are identified as the most important design variables. For PIN structures, the absorption profile and intrinsic region thickness are both functions of the Ge thickness, but in uni-traveling carrier (UTC) structures the absorption profile and intrinsic region can be designed independently. This

  3. Economic Feasibility of Stand-Alone Wind Energy Hybrid with Bioenergy from Anaerobic Digestion for Electrification of Remote Area of Pakistan

    Directory of Open Access Journals (Sweden)

    Abdur Raheem

    2015-02-01

    Full Text Available Hybrid Renewable Energy systems (HRES are gaining importance throughout the world because of the finite sources of oil and gas reservoirs. These have the great ability in the production of electrical energy and cleaning the environment. It is difficult to get grid electricity in the remote areas where no infrastructure exists. The utilization of renewable sources is the ultimate solution for the generation of electricity. In this paper, the economic modeling of Hybrid system consisting of Wind/biomass is explored for the remote area ‘Jangiah’ of Balochistan province, Pakistan. Anaerobic Digestion of biomass is used to get biogas. This source is used to complement the uncertainties in the wind production. Homer is used to simulate the hybrid model. Economic analysis is performed to get the net present value (NPV and cost of energy. It is observed that wind/biomass alone is capable to meet the demand of community which consumes 60 kW peak daily along with the storage backup. This system is the most economical with COE equal to 0.118 US$/kWh following the hybrid biomass/wind/diesel system with COE 0.202 US$/kWh. The sensitivity analysis is carried out and shows that the proposed system is sensitive to the prices of fossil fuel and project lifespan. The net present value increases as the lifetime of the project increases from 15 years to 30 years. It can also be concluded that if the price of the diesel drops below 0.8 US$/liter, the traditional system using fossil fuels will become the most suitable system for the generation of electricity in remote areas.

  4. Model of single-electron performance of micropixel avalanche photodiodes

    CERN Document Server

    Sadygov, Z; Akhmedov, G; Akhmedov, F; Khorev, S; Mukhtarov, R; Sadigov, A; Sidelev, A; Titov, A; Zerrouk, F; Zhezher, V

    2014-01-01

    An approximate iterative model of avalanche process in a pixel of micropixel avalanche photodiode initiated by a single photoelectron is presented. The model describes development of the avalanche process in time, taking into account change of electric field within the depleted region caused by internal discharge and external recharge currents. Conclusions obtained as a result of modelling are compared with experimental data. Simulations show that typical durations of the front and rear edges of the discharge current have the same magnitude of less than 50 ps. The front of the external recharge current has the same duration, however duration of the rear edge depends on value of the quenching micro-resistor. It was found that effective capacitance of the pixel calculated as the slope of linear dependence of the pulse charge on bias voltage exceeds its real capacitance by a factor of two.

  5. Correcting for accidental correlations in saturated avalanche photodiodes.

    Science.gov (United States)

    Grieve, J A; Chandrasekara, R; Tang, Z; Cheng, C; Ling, A

    2016-02-22

    In this paper we present a general method for estimating rates of accidental coincidence between a pair of single photon detectors operated within their saturation regimes. By folding the effects of recovery time of both detectors and the detection circuit into an "effective duty cycle" we are able to accomodate complex recovery behaviour at high event rates. As an example, we provide a detailed high-level model for the behaviour of passively quenched avalanche photodiodes, and demonstrate effective background subtraction at rates commonly associated with detector saturation. We show that by post-processing using the updated model, we observe an improvement in polarization correlation visibility from 88.7% to 96.9% in our experimental dataset. This technique will be useful in improving the signal-to-noise ratio in applications which depend on coincidence measurements, especially in situations where rapid changes in flux may cause detector saturation. PMID:26907016

  6. Characterization of midwave infrared InSb avalanche photodiode

    Science.gov (United States)

    Abautret, J.; Perez, J. P.; Evirgen, A.; Rothman, J.; Cordat, A.; Christol, P.

    2015-06-01

    This paper focuses on the InSb material potential for the elaboration of Avalanche Photodiodes (APD) for high performance infrared imaging applications, both in passive or active mode. The first InSb electron-APD structure was grown by molecular beam epitaxy, processed and electrically characterized. The device performances are at the state of the art for the InSb epi-diode technology, with a dark current density J(-50 mV) = 32 nA/cm2 at 77 K. Then, a pure electron injection was performed, and an avalanche gain, increasing exponentially, was observed with a gain value near 3 at -4 V at 77 K. The Okuto-Crowell model was used to determine the electron ionization coefficient α(E) in InSb, and the InSb gain behavior is compared with the one of InAs and MCT APDs.

  7. Avalanche photodiode based time-of-flight mass spectrometry

    Energy Technology Data Exchange (ETDEWEB)

    Ogasawara, Keiichi, E-mail: kogasawara@swri.edu; Livi, Stefano A.; Desai, Mihir I.; Ebert, Robert W.; McComas, David J.; Walther, Brandon C. [Southwest Research Institute, 6220 Culebra Road, San Antonio, Texas 78238 (United States)

    2015-08-15

    This study reports on the performance of Avalanche Photodiodes (APDs) as a timing detector for ion Time-of-Flight (TOF) mass spectroscopy. We found that the fast signal carrier speed in a reach-through type APD enables an extremely short timescale response with a mass or energy independent <2 ns rise time for <200 keV ions (1−40 AMU) under proper bias voltage operations. When combined with a microchannel plate to detect start electron signals from an ultra-thin carbon foil, the APD comprises a novel TOF system that successfully operates with a <0.8 ns intrinsic timing resolution even using commercial off-the-shelf constant-fraction discriminators. By replacing conventional total-energy detectors in the TOF-Energy system, APDs offer significant power and mass savings or an anti-coincidence background rejection capability in future space instrumentation.

  8. Systematic afterpulsing-estimation algorithms for gated avalanche photodiodes

    CERN Document Server

    Wiechers, Carlos; Muñiz-Sánchez, Oscar R; Yépiz, Pablo Daniel; Arredondo-Santos, Alejandro; Hirsch, Jorge G; U'Ren, Alfred B

    2016-01-01

    We present a method designed to efficiently extract optical signals from InGaAs avalanche photodiodes (APDs) operated in gated mode. In particular, our method permits an estimation of the fraction of counts which actually results from the signal being measured, as opposed to being produced by noise mechanisms, specifically by afterpulsing. Our method in principle allows the use of InGaAs APDs at high detection efficiencies, with the full operation bandwidth, either with or without resorting to the application of a dead time. As we show below, our method can be used in configurations where afterpulsing exceeds the genuine signal by orders of magnitude, even near saturation. The algorithms which we have developed are suitable to be used either in real-time processing of raw detection probabilities or in post-processing applications, after a calibration step has been performed. The algorithms which we propose here can complement technologies designed for the reduction of afterpulsing.

  9. Detection of charged particles through a photodiode: design and analysis

    International Nuclear Information System (INIS)

    This project develops and construct an charge particle detector mean a pin photodiode array, design and analysis using a silicon pin Fotodiodo that generally is used to detect visible light, its good efficiency, size compact and reduced cost specifically allows to its use in the radiation monitoring and alpha particle detection. Here, so much, appears the design of the system of detection like its characterization for alpha particles where one is reported as alpha energy resolution and detection efficiency. The equipment used in the development of work consists of alpha particle a triple source composed of Am-241, Pu-239 and Cm-244 with 5,55 KBq as total activity, Maestro 32 software made by ORTEC, a multi-channel card Triumph from ORTEC and one low activity electroplated uranium sample. (Author)

  10. Innovative Detection System of Ochratoxin A by Thin Film Photodiodes

    Science.gov (United States)

    Caputo, Domenico; de Cesare, Giampiero; Fanelli, Corrado; Nascetti, Augusto; Ricelli, Alessandra; Scipinotti, Riccardo

    2007-01-01

    In this work we present, for the first time, a rapid, compact and innovative method for detection of Ochratoxin A (OTA) based on hydrogenated amorphous silicon (a-Si:H) sensors. 2 μl of acidified toluene containing OTA at different concentrations were spotted on the silica side of a High Performance Thin Layer Cromatography plate and aligned with a a-Si:H p-i-n photodiode deposited by Plasma Enhanced Chemical Vapor Deposition on a different glass substrate. As an UV radiation excites the mycotoxin, the re-emitted light is detected by the a-Si:H sensor. Results show a very good linearity between OTA concentration and the sensor photocurrent over almost three orders of magnitude. The minimum detected OTA concentration is equal to 0.1ng, showing that the presented system has the potential for a low cost system suitable for the early detection of toxins in foods.

  11. Innovative Detection System of Ochratoxin A by Thin Film Photodiodes

    Directory of Open Access Journals (Sweden)

    Riccardo Scipinotti

    2007-07-01

    Full Text Available In this work we present, for the first time, a rapid, compact and innovativemethod for detection of Ochratoxin A (OTA based on hydrogenated amorphous silicon (a-Si:H sensors. 2 μl of acidified toluene containing OTA at different concentrations werespotted on the silica side of a High Performance Thin Layer Cromatography plate andaligned with a a-Si:H p-i-n photodiode deposited by Plasma Enhanced Chemical VaporDeposition on a different glass substrate. As an UV radiation excites the mycotoxin, the re-emitted light is detected by the a-Si:H sensor. Results show a very good linearity betweenOTA concentration and the sensor photocurrent over almost three orders of magnitude. Theminimum detected OTA concentration is equal to 0.1ng, showing that the presented systemhas the potential for a low cost system suitable for the early detection of toxins in foods.

  12. X-ray detection with a scintillating YAP-window hybrid photomultiplier tube

    CERN Document Server

    D'Ambrosio, C; Leutz, H; Puertolas, D; Rosso, E

    2000-01-01

    A YAP(YAlO/sub 3/:Ce)-scintillating window, coated on its inner surface with an S20-photocathode, seals a cross-focusing hybrid photomultiplier tube (HPMT) equipped with a small p-i-n anode of 2-mm diameter. This new radiation detector separates X-ray lines down to about 2-keV peak energy from the HPMT noise. Its detection efficiency for high gamma energies depends on the YAP-window thickness and amounts to about 18% attenuation at 400-keV energy in the present version. Competitive radiation detectors like Si photodiodes and Si drift chambers are discussed and compared to our prototype, with particular attention given to their energy resolution and noise performance, which limits their active area considerably. (19 refs).

  13. Combined detectors of charged particles based on zinc selenide scintillators and silicon photodiodes

    CERN Document Server

    Ryzhikov, V D; Starzhinskij, N G

    2001-01-01

    combined detectors of charged particles are described based on zinc selenide (Zn Se(Te)) crystals,silicon photodiodes and charges-sensitive amplifiers. Zn Se(Te) scintillators are characterized by high alpha to beta ratio (approx 1.0), good scintillation efficiency (up to 22%),and high radiation stability (up to 100 Mrad),together with good spectral matching with silicon PIN photodiodes. The signal coming from the photodiode in the two modes (photoreceiver and semiconductor detector) differ in the amplitude values and pulse duration, which opens new possibilities for development and application of such combined detectors.

  14. The photodiode of UV-range on the basis of ZnSe

    Directory of Open Access Journals (Sweden)

    Perevertailo V. L.

    2010-03-01

    Full Text Available The construction and technology of Shottky photodiode on the basis of ZnSe, sensible in the ultraviolet region of spectrum are considered. Researches of electrophysical and photo-electric descriptions of photodiodes of Shottky Nі–ZnSe(Te,O–Іn are conducted and it is shown, that they can be applied in devices for radiometry and dissymmetry UV radiations in the ranges UVA, UVB and UVC. Comparison of parameters of developed UV photodiodes based on ZnSe with analogues showed that small capacitance and low value of dark current is their substantial difference of other ones.

  15. High performance x-ray imaging detectors on foil using solution-processed organic photodiodes with extremely low dark leakage current (Presentation Recording)

    Science.gov (United States)

    Kumar, Abhishek; Moet, Date; van der Steen, Jan Laurens; van Breemen, Albert; Shanmugam, Santhosh; Gilot, Jan; Andriessen, Ronn; Simon, Matthias; Ruetten, Walter; Douglas, Alexander; Raaijmakers, Rob; Malinowski, Pawel E.; Myny, Kris; Gelinck, Gerwin

    2015-10-01

    High performance X-ray imaging detectors on foil using solution-processed organic photodiodes with extremely low dark leakage current Abhishek Kumara, Date Moeta, Albert van Breemena, Santhosh Shanmugama, Jan-Laurens van der Steena, Jan Gilota, Ronn Andriessena, Matthias Simonb, Walter Ruettenb, Alexander U. Douglasb, Rob Raaijmakersc, Pawel E. Malinowskid, Kris Mynyd and Gerwin H. Gelincka,e a. Holst Centre/TNO, High Tech Campus 31, Eindhoven 5656 AE, The Netherlands b. Philips Research, High Tech Campus 34, 5656 AE Eindhoven, The Netherlands c. Philips Healthcare, Veenpluis 6-8, 5684 PC Best, The Netherlands d. Department of Large Area Electronics, imec vzw, Kapeldreef 75, Leuven B3001, Belgium e. Applied Physics Department, TU Eindhoven, Eindhoven, The Netherlands We demonstrate high performance X-ray imaging detectors on foil suitable for medical grade X-ray imaging applications. The detectors are based on solution-processed organic photodiodes forming bulk-heterojunctions from photovoltaic donor and acceptor blend. The organic photodiodes are deposited using an industrially compatible slot die coating technique with end of line processing temperature below 100°C. These photodiodes have extremely low dark leakage current density of 10-7 mA/cm2 at -2V bias with very high yield and have peak absorption around 550 nm wavelength. We combine these organic photodiodes with high mobility metal oxide semiconductor based thin film transistor arrays with high pixel resolution of 200ppi on thin plastic substrate. When combined with a typical CsI(TI) scintillator material on top, they are well suited for low dose X-ray imaging applications. The optical crosstalk is insignificant upto resolution of 200 ppi despite the fact that the photodiode layer is one continuous layer and is non-pixelated. Low processing temperatures are another key advantage since they can be fabricated on plastic substrate. This implies that we can make X-ray detectors on flexible foil. Those

  16. A Proposal for CO2 Abatement in Urban Areas: The UDR1–Lethe© Turbo-Hybrid Vehicle

    Directory of Open Access Journals (Sweden)

    Max Lora

    2011-03-01

    Full Text Available For years the interest of the University of Roma 1 (UDR1 research group has been focused on the development of a Hybrid Series vehicle (called Lethe©, different from standard ones, thanks to the use of a Gas Turbine (GT set as a thermal engine. The reason for this choice resides in the opportunity to reduce weight and dimensions, in comparison to a traditional Internal Combustion Engine. It’s currently not possible to use the GT engine set directly for the vehicle traction, so the UDR1 HS configuration only shows the GT set connected with the electric generator. The result is that the traction is purely electric. The resulting engine configuration is commonly described as a Hybrid Series Plug In. Several previous studies have been carried out, and this research has allowed us to define the correct ratio (Degree of Hybridization between the installed power of the battery pack and that of the GT electric generator which simultaneously guarantee the main life for the battery package and the capacity of the vehicle to complete a common mission without lack of energy or stopping. This article reports the final step of the research: once all data has been calculated, how to “hybridize” a commercial city car, passenger sedan or any other vehicle.

  17. GaN-Based, Low-Voltage Avalanche Photodiodes for Robust and Compact UV Imagers Project

    Data.gov (United States)

    National Aeronautics and Space Administration — This Phase I SBIR program is directed toward the development of a novel low-voltage (~10V) AlGaN-based multi-quantum well (MQW) avalanche photodiode (APD) on...

  18. The properties of ITE's silicon avalanche photodiodes within the spectral range used in scintillation detection

    CERN Document Server

    Wegrzecka, I

    1999-01-01

    The design and properties of 3 mm silicon avalanche photodiodes developed at ITE are presented. Their performance parameters within the spectral range applicable in scintillation detection (400-700 nm) are discussed and compared to those for near infrared radiation.

  19. Characterization of a Photodiode Coupled with a Si Nanowire-FET on a Plastic Substrate

    Directory of Open Access Journals (Sweden)

    Kiyeol Kwak

    2010-10-01

    Full Text Available In this study, a laterally coupled device composed of a photodiode and a Si nanowires-field-effect transistor (NWs-FET is constructed on a plastic substrate and the coupled device is characterized. The photodiode is made of p-type Si NWs and an n-type ZnO film. The Si NWs-FET is connected electrically to the photodiode in order to enhance the latter’s photocurrent efficiency by adjusting the gate voltage of the FET. When the FET is switched on by biasing a gate voltage of −9 V, the photocurrent efficiency of the photodiode is three times higher than that when the FET is switched off by biasing a gate voltage of 0 V.

  20. InGaAs p-i-n Photodiodes for Microwave Applications

    OpenAIRE

    Malyshev, Sergei; Chizh, A.; Andrievski, Vatslav

    2004-01-01

    The experimental and theoretical study of the surface-illuminated InGaAs p-i-n photodiodes for such microwave applications as photonic microwave generation, optical control of microwave circuits and optoelectronic mixing is presented.

  1. AN INVESTIGATION ON PHOTODIODE SWITCHING TIMES FOR PULSED HIGH RADIANT POWERS

    Directory of Open Access Journals (Sweden)

    Erdem ÖZÜTÜRK

    2004-02-01

    Full Text Available In many applications the light impinging on photodiode surface is pulsed. The change in parameter values in the equivalent circuit of photodiode is important if the amplitude of light pulses are large. In this situation, the change of parameter values with the amplitude of light pulse is nonlinear. Because of this, the nonlinear model of photodiode has been used in this search. By the reasons of photoconductive operation mode is a fast operation, the photoconductive circuit has been examined. In this study, according to the nonlinear behavior of photodiode at pulsed high radiant powers the changes of switching times have been investigated by using SPICE program and the changing of switching times with increasing radiant power has been showed.

  2. Characterization of Power-to-Phase Conversion in High-Speed P-I-N Photodiodes

    CERN Document Server

    Taylor, J; Hati, A; Nelson, C; Quinlan, F; Joshi, A; Diddams, S

    2011-01-01

    Fluctuations of the optical power incident on a photodiode can be converted into phase fluctuations of the resulting electronic signal due to nonlinear saturation in the semiconductor. This impacts overall timing stability (phase noise) of microwave signals generated from a photodetected optical pulse train. In this paper, we describe and utilize techniques to characterize this conversion of amplitude noise to phase noise for several high-speed (>10 GHz) InGaAs P-I-N photodiodes operated at 900 nm. We focus on the impact of this effect on the photonic generation of low phase noise 10 GHz microwave signals and show that a combination of low laser amplitude noise, appropriate photodiode design, and optimum average photocurrent is required to achieve phase noise at or below -100 dBc/Hz at 1 Hz offset a 10 GHz carrier. In some photodiodes we find specific photocurrents where the power-to-phase conversion factor is observed to go to zero.

  3. Investigation of the avalanche photodiodes for the CMS electromagnetic calorimeter operated at high gain

    CERN Document Server

    Deiters, K; Godinovic, N; Ingram, Q; Longo, E; Montecchi, M; Musienko, Yu V; Nicol, S; Patel, B; Renker, D; Reucroft, S; Rusack, R W; Sakhelashvili, T M; Singovsky, A V; Soric, I; Swain, J D; Vikas, P

    2001-01-01

    Avalanche photodiodes (APD) with improved characteristics were developed by Hamamatsu Photonics for the electromagnetic calorimeter of the CMS experiment. This report presents measurements of the latest generation of APDs, which are capable to operate at high gains (~2000). (5 refs).

  4. Single Photon Sensitive HgCdTe Avalanche Photodiode Detector (APD) Project

    Data.gov (United States)

    National Aeronautics and Space Administration — A linear mode HgCdT electron-initiated avalanche photodiode (EAPD) capable of 1570nm photon detection efficiency (PDE) at >10 MHz will be developed. The Phase I...

  5. Optimal management of compressed air energy storage in a hybrid wind-pneumatic-diesel system for remote area's power generation

    International Nuclear Information System (INIS)

    Electricity in Canadian remote areas is, historically, produced using Diesel generators. Its total production cost is very high not only due to inherent cost of fuel but also due to transportation and maintenance costs. Moreover, the use of fossil fuels is a significant source of greenhouse gas emissions. Hybrid systems that combine wind turbines and diesel generators reduce fuel consumption, operational cost and pollution. Adding a storage element to this hybrid system increases the penetration level of renewable sources, i.e. the percentage of renewable energy in the overall production, and further improves fuel savings. Among all energy storage techniques, CAES (compressed air energy storage) has several advantages to be combined with hybrid WDS (wind-diesel systems), due to its low cost, high power density and reliability. In a previous work, we have exposed and have evaluated a new technique to transform the existing Diesel engine to a HPCE (hybrid pneumatic combustion engine), able to operate as a bi-source engine (compressed air and fuel). Based on ideal cycle modeling, we provided a first estimation of the annual fuel economy obtained with this multi-hybrid system (WDS–HPCE). As a continuity to this work, we will compare, in this article, several strategies of management of the CAES. We will demonstrate that one of these strategies that uses an algorithm based on wind speed forecast, is the most efficient. We will, also, provide an evaluation of the fuel economy generated by the WDS–HPCE, as a function of the wind power penetration ratio, the air-storage capacity, and the average wind speed on site. - Highlights: • We model thermodynamic cycle of a new hybrid pneumatic combustion engine. • we evaluate all ratios of pneumatic power to fuel power and select two highlighted. • we calculate maps of fuel and air consumption for the highlighted strategies. • We evaluate fuel consumption for each strategy and for a combination between both. • we get

  6. Low dark count geiger mode avalanche photodiodes fabricated in conventional CMOS technologies

    OpenAIRE

    Vilella Figueras, Eva; Arbat Casas, Anna; Alonso Casanovas, Oscar; Comerma Montells, Albert; Trenado, J.; Vilà i Arbonès, Anna Maria; Casanova Mohr, Raimon; Garrido Beltrán, Lluís; Diéguez Barrientos, Àngel

    2011-01-01

    Avalanche photodiodes operated in the Geiger mode present very high intrinsic gain and fast time response, which make the sensor an ideal option for those applications in which detectors with high sensitivity and velocity are required. Moreover, they are compatible with conventional CMOS technologies, allowing sensor and front-end electronics integration within the pixel cell. Despite these excellent qualities, the photodiode suffers from high intrinsic noise, which degrades the performance o...

  7. Rad Tolerant CMOS Image Sensor Based on Hole Collection 4T Pixel Pinned Photodiode

    OpenAIRE

    Place, Sébastien; Carrere, Jean-Pierre; Allegret, Stephane; Magnan, Pierre; Goiffon, Vincent; Roy, François

    2012-01-01

    1.4μm pixel pitch CMOS Image sensors based on hole collection pinned photodiode (HPD) have been irradiated with 60Co source. The HPD sensors exhibit much lower dark current degradation than equivalent commercial sensors using an Electron collection Pinned Photodiode (EPD). This hardness improvement is mainly attributed to carrier accumulation near the interfaces induced by the generated positive charges in dielectrics. The pre-eminence of this image sensor based on hole collection pinned phot...

  8. Soft X-ray detection and photon counting spectroscopy with commercial 4H-SiC Schottky photodiodes

    Science.gov (United States)

    Zhao, S.; Gohil, T.; Lioliou, G.; Barnett, A. M.

    2016-09-01

    The results of electrical characterisation and X-ray detection measurements of two different active area (0.06 mm2 and 0.5 mm2) commercial 4H-SiC Schottky photodiodes at room temperature are reported. The devices exhibited low dark currents (less than 10 pA) even at a high electric field strengths (403 kV/cm for 0.06 mm2 diodes; 227 kV/cm for 0.5 mm2 diodes). The results of the X-ray measurements indicate that the diodes can be used as photon counting spectroscopic X-ray detectors with modest energy resolutions: FWHM at 5.9 keV of 1.8 keV and 3.3 keV, for the 0.06 mm2 and 0.5 mm2 devices, respectively. Noise analysis of the photodiodes coupled to a custom low noise charge sensitive preamplifier is also presented.

  9. Nano-Multiplication-Region Avalanche Photodiodes and Arrays

    Science.gov (United States)

    Zheng, Xinyu; Pain, Bedabrata; Cunningham, Thomas

    2008-01-01

    Nano-multiplication-region avalanche photodiodes (NAPDs), and imaging arrays of NAPDs integrated with complementary metal oxide/semiconductor (CMOS) active-pixel-sensor integrated circuitry, are being developed for applications in which there are requirements for high-sensitivity (including photoncounting) detection and imaging at wavelengths from about 250 to 950 nm. With respect to sensitivity and to such other characteristics as speed, geometric array format, radiation hardness, power demand of associated circuitry, size, weight, and robustness, NAPDs and arrays thereof are expected to be superior to prior photodetectors and arrays including CMOS active-pixel sensors (APSs), charge-coupled devices (CCDs), traditional APDs, and microchannelplate/ CCD combinations. Figure 1 depicts a conceptual NAPD array, integrated with APS circuitry, fabricated on a thick silicon-on-insulator wafer (SOI). Figure 2 presents selected aspects of the structure of a typical single pixel, which would include a metal oxide/semiconductor field-effect transistor (MOSFET) integrated with the NAPD. The NAPDs would reside in silicon islands formed on the buried oxide (BOX) layer of the SOI wafer. The silicon islands would be surrounded by oxide-filled insulation trenches, which, together with the BOX layer, would constitute an oxide embedding structure. There would be two kinds of silicon islands: NAPD islands for the NAPDs and MOSFET islands for in-pixel and global CMOS circuits. Typically, the silicon islands would be made between 5 and 10 m thick, but, if necessary, the thickness could be chosen outside this range. The side walls of the silicon islands would be heavily doped with electron-acceptor impurities (p+-doped) to form anodes for the photodiodes and guard layers for the MOSFETs. A nanoscale reach-through structure at the front (top in the figures) central position of each NAPD island would contain the APD multiplication region. Typically, the reach-through structure would be

  10. Remobilization of granitoid rocks through mafic recharge: evidence from basalt-trachyte mingling and hybridization in the Manori-Gorai area, Mumbai, Deccan Traps

    Science.gov (United States)

    Zellmer, Georg F.; Sheth, Hetu C.; Iizuka, Yoshiyuki; Lai, Yi-Jen

    2012-01-01

    Products of contrasting mingled magmas are widespread in volcanoes and intrusions. Subvolcanic trachyte intrusions hosting mafic enclaves crop out in the Manori-Gorai area of Mumbai in the Deccan Traps. The petrogenetic processes that produced these rocks are investigated here with field data, petrography, mineral chemistry, and whole rock major, trace, and Pb isotope chemistry. Local hybridization has occurred and has produced intermediate rocks such as a trachyandesitic dyke. Feldspar crystals have complex textures and an unusually wide range in chemical composition. Crystals from the trachytes cover the alkali feldspar compositional range and include plagioclase crystals with anorthite contents up to An47. Crystals from the mafic enclaves are dominated by plagioclase An72-90, but contain inclusions of orthoclase and other feldspars covering the entire compositional range sampled in the trachytes. Feldspars from the hybridized trachyandesitic dyke yield mineral compositions of An80-86, An47-54, Ab94-99, Or45-60, and Or96-98, all sampled within individual phenocrysts. We show that these compositional features are consistent with partial melting of granitoid rocks by influx of mafic magmas, followed by magma mixing and hybridization of the partial melts with the mafic melts, which broadly explains the observed bulk rock major and trace element variations. However, heterogeneities in Pb isotopic compositions of trachytes are observed on the scale of individual outcrops, likely reflecting initial variations in the isotopic compositions of the involved source rocks. The combined data point to one or more shallow-level trachytic magma chambers disturbed by multiple injections of trachytic, porphyritic alkali basaltic, and variably hybridized magmas.

  11. Design of HgCdTe heterojunction photodiodes on Si substrate

    Science.gov (United States)

    Zhang, P.; Ye, Z. H.; Chen, Y. Y.; Lin, C.; Hu, X. N.; Ding, R. J.; He, L.

    2014-05-01

    An innovative heterojunction photodiode structure in HgCdTe-on-Si long-wavelength (LW) infrared focal plane array (IRFPA) detector is investigated in this paper. The quantum efficiency and the photoresponse of devices have been numerically simulated, using Crosslight Technology Computer Aided Design (TCAD) software. Simulation results indicate that in contrast to the p+-on-n homojunction photodiode, the heterojunction photodiode effectively suppresses the crosstalk between adjacent pixels and interface recombination between HgCdTe active region and buffer layer on Si substrate. And in the range of the LW-band, the quantum efficiency of the heterojunction photodiode increases by 35.5%. Furthermore, the heterojunction photodiode acquires the narrow-band response spectrum desired in the application of the LW IRFPA detectors as the p+-on-n homojunction photodiode with the optical filter. Finally, the smaller bulk resistance of its heavily doped N-type layer ensures the uniformity of the pixel series resistance in the large format IRFPAs.

  12. Readout circuitry for continuous high-rate photon detection with arrays of InP Geiger-mode avalanche photodiodes

    Science.gov (United States)

    Frechette, Jonathan; Grossmann, Peter J.; Busacker, David E.; Jordy, George J.; Duerr, Erik K.; McIntosh, K. Alexander; Oakley, Douglas C.; Bailey, Robert J.; Ruff, Albert C.; Brattain, Michael A.; Funk, Joseph E.; MacDonald, Jason G.; Verghese, Simon

    2012-06-01

    An asynchronous readout integrated circuit (ROIC) has been developed for hybridization to a 32x32 array of single-photon sensitive avalanche photodiodes (APDs). The asynchronous ROIC is capable of simultaneous detection and readout of photon times of arrival, with no array blind time. Each pixel in the array is independently operated by a finite state machine that actively quenches an APD upon a photon detection event, and re-biases the device into Geiger mode after a programmable hold-off time. While an individual APD is in hold-off mode, other elements in the array are biased and available to detect photons. This approach enables high pixel refresh frequency (PRF), making the device suitable for applications including optical communications and frequency-agile ladar. A built-in electronic shutter that de-biases the whole array allows the detector to operate in a gated mode or allows for detection to be temporarily disabled. On-chip data reduction reduces the high bandwidth requirements of simultaneous detection and readout. Additional features include programmable single-pixel disable, region of interest processing, and programmable output data rates. State-based on-chip clock gating reduces overall power draw. ROIC operation has been demonstrated with hybridized InP APDs sensitive to 1.06-μm and 1.55-μm wavelength, and fully packaged focal plane arrays (FPAs) have been assembled and characterized.

  13. A New Positioning Algorithm for Position-Sensitive Avalanche Photodiodes.

    Science.gov (United States)

    Zhang, Jin; Olcott, Peter D; Levin, Craig S

    2007-06-01

    We are using a novel position sensitive avalanche photodiode (PSAPD) for the construction of a high resolution positron emission tomography (PET) camera. Up to now most researchers working with PSAPDs have been using an Anger-like positioning algorithm involving the four corner readout signals of the PSAPD. This algorithm yields a significant non-linear spatial "pin-cushion" distortion in raw crystal positioning histograms. In this paper, we report an improved positioning algorithm, which combines two diagonal corner signals of the PSAPD followed by a 45° rotation to determine the X or Y position of the interaction. We present flood positioning histogram data generated with the old and new positioning algorithms using a 3 × 4 array of 2 × 2 × 3 mm(3) and a 3 × 8 array of 1 × 1 × 3 mm(3) of LSO crystals coupled to 8 × 8 mm(2) PSAPDs. This new algorithm significantly reduces the pin-cushion distortion in raw flood histogram image. PMID:24307743

  14. Measurement of Radiation - Light Field Congruence using a Photodiode Array

    Science.gov (United States)

    Balderson, Michael J.

    Improved treatment techniques in radiation therapy provide incentive to reduce treatment margins, thereby increasing the necessity for more accurate geometrical setup of the linear accelerator and accompanying components. In this thesis, we describe the development of a novel device that enables precise and automated measurement of radiation-light field congruence of medical linear accelerators for the purpose of improving setup accuracy, and standardizing repeated quality control activities. The device consists of a silicon photodiode array, an evaluation board, a data acquisition card, and a laptop. Using the device, we show that the radiation-light field congruence for both 6 and 15 MV beams is within 2 mm on a Varian Clinac 21 EX medical linear accelerator. Because measurements are automated, ambiguities resulting from observer variability are removed, greatly improving the reproducibility of measurements over time and across observers. We expect the device to be useful in providing consistent measurements on linear accelerators used for stereotactic radiosurgery, during the commissioning of new linear accelerators, and as an alternative to film or other commercially available devices for performing monthly or annual quality control checks.

  15. ASIC Readout Circuit Architecture for Large Geiger Photodiode Arrays

    Science.gov (United States)

    Vasile, Stefan; Lipson, Jerold

    2012-01-01

    The objective of this work was to develop a new class of readout integrated circuit (ROIC) arrays to be operated with Geiger avalanche photodiode (GPD) arrays, by integrating multiple functions at the pixel level (smart-pixel or active pixel technology) in 250-nm CMOS (complementary metal oxide semiconductor) processes. In order to pack a maximum of functions within a minimum pixel size, the ROIC array is a full, custom application-specific integrated circuit (ASIC) design using a mixed-signal CMOS process with compact primitive layout cells. The ROIC array was processed to allow assembly in bump-bonding technology with photon-counting infrared detector arrays into 3-D imaging cameras (LADAR). The ROIC architecture was designed to work with either common- anode Si GPD arrays or common-cathode InGaAs GPD arrays. The current ROIC pixel design is hardwired prior to processing one of the two GPD array configurations, and it has the provision to allow soft reconfiguration to either array (to be implemented into the next ROIC array generation). The ROIC pixel architecture implements the Geiger avalanche quenching, bias, reset, and time to digital conversion (TDC) functions in full-digital design, and uses time domain over-sampling (vernier) to allow high temporal resolution at low clock rates, increased data yield, and improved utilization of the laser beam.

  16. High Response in a Tellurium-Supersaturated Silicon Photodiode

    Science.gov (United States)

    Wang, Xi-Yuan; Huang, Yong-Guang; Liu, De-Wei; Zhu, Xiao-Ning; Zhu, Hong-Liang

    2013-03-01

    Single crystalline silicon supersaturated with tellurium are formed by ion implantation followed by excimer nanosecond pulsed laser melting (PLM). The lattice damaged by ion implantation is restored during the PLM process, and dopants are effectively activated. The hyperdoped layer exhibits high and broad optical absorption from 400 to 2500nm. The n+ p photodiodes fabricated from these materials show high response (6.9A/W at 1000nm) with reverse bias 12 V at room temperature. The corresponding cut-off wavelength is 1258nm. The amount of gain and extended cut-off wavelength both increase with increasing reverse bias voltage; above 100% external quantum efficiency is observed even at a reverse bias of 1 V. The cut-off wavelength with 0 V bias is shorter than the commercial silicon detector. This implies that the Burstein-Moss shift is due to hyperdoping. The amount of the extended cut-off wavelength increases with increasing reverse bias voltage, suggesting existence of the Franz—Keldysh effect.

  17. Interaction of Avalanche Photodiodes (APDs Devices With Thermal Irradiation Environments

    Directory of Open Access Journals (Sweden)

    Ahmed Nabih Zaki Rashed

    2012-04-01

    Full Text Available This paper has been examined the high temperature irradiation variations testing in order to be used to determine avalanche photodiode lifetime, even though APD failure mechanisms are more sensitive to increases in current density. As a measured parameter of degradation, the current density is of great significance when searching for failure modes in APD. Raising the current density however, is not really indicative of lifetime since it is more likely a situation to be avoided than one that simulates normal lifetime degradation. The reliability of semiconductor detectors is very dependent on the degradation modes. This paper has investigated deeply some of the degradation performance and capabilities of typical APDs currently used in many communication and sensing systems over wide range of the affecting parameters. APDs are used in systems that require coherent and often single mode light such as high data rate communications and sensing applications. APDs are an attractive receiver choice for photon-starved (low signal applications, because their internal gain mechanism can improve signal to noise ratio. An optical receiver must also be appropriate for the laser wavelength being used. The near infrared is the preferred wavelength regime for deep space optical communications largely due to the wavelengths of available laser technologies that meet the optical power requirements of a deep space optical link

  18. Characterization of midwave infrared InSb avalanche photodiode

    Energy Technology Data Exchange (ETDEWEB)

    Abautret, J., E-mail: johan.abautret@ies.univ-montp2.fr; Evirgen, A. [Université Montpellier, IES, UMR 5214, F-34095 Montpellier (France); CNRS, IES, UMR 5214, F-34095 Montpellier (France); SOFRADIR, BP 21, 38113 Veurey-Voroize (France); Perez, J. P.; Christol, P. [Université Montpellier, IES, UMR 5214, F-34095 Montpellier (France); CNRS, IES, UMR 5214, F-34095 Montpellier (France); Rothman, J. [CEA-LETI, 17 rue des Martyrs, 38054 Grenoble Cedex 9 (France); Cordat, A. [SOFRADIR, BP 21, 38113 Veurey-Voroize (France)

    2015-06-28

    This paper focuses on the InSb material potential for the elaboration of Avalanche Photodiodes (APD) for high performance infrared imaging applications, both in passive or active mode. The first InSb electron-APD structure was grown by molecular beam epitaxy, processed and electrically characterized. The device performances are at the state of the art for the InSb epi-diode technology, with a dark current density J(−50 mV) = 32 nA/cm{sup 2} at 77 K. Then, a pure electron injection was performed, and an avalanche gain, increasing exponentially, was observed with a gain value near 3 at −4 V at 77 K. The Okuto–Crowell model was used to determine the electron ionization coefficient α(E) in InSb, and the InSb gain behavior is compared with the one of InAs and MCT APDs.

  19. Continuous Holdup Measurements with Silicon P-I-N Photodiodes

    Energy Technology Data Exchange (ETDEWEB)

    Bell, Z.W.; Oberer, R.B.; Williams, J.A.; Smith, D.E.; Paulus, M.J.

    2002-05-01

    We report on the behavior of silicon P-I-N photodiodes used to perform holdup measurements on plumbing. These detectors differ from traditional scintillation detectors in that no high-voltage is required, no scintillator is used (gamma and X rays are converted directly by the diode), and they are considerably more compact. Although the small size of the diodes means they are not nearly as efficient as scintillation detectors, the diodes' size does mean that a detector module, including one or more diodes, pulse shaping electronics, analog-to-digital converter, embedded microprocessor, and digital interface can be realized in a package (excluding shielding) the size of a pocket calculator. This small size, coupled with only low-voltage power requirement, completely solid-state realization, and internal control functions allows these detectors to be strategically deployed on a permanent basis, thereby reducing or eliminating the need for manual holdup measurements. In this paper, we report on the measurement of gamma and X rays from {sup 235}U and {sup 238}U contained in steel pipe. We describe the features of the spectra, the electronics of the device and show how a network of them may be used to improve estimates of inventory in holdup.

  20. Integration of Hybrid PV/Wind Generation System Using Fuzzy MPPT in Grid Connected System for Remote Area

    Directory of Open Access Journals (Sweden)

    Soedibyo

    2016-01-01

    Full Text Available Photovoltaic and wind are renewable energy resources that widely used and grow rapidly in fulfilling electricity demand. Powers from both technologies depend on sunlight intensity and wind speed. For small scale power generation, DC voltage from both technologies is low and requires step-up converter to raise DC voltage ratio before converted into AC voltage. To optimize this system, step-up converter must have high ratio and efficiency to a distance of wide voltage input. This paper proposed an operation simulation and arrangement of DC-DC converter along with DC-AC from hybrid source PV-Wind which integrated to grid utilities without using storage device. High Gain Integrated Cascade Boost (HGICB is DC-DC converter that has quadratic voltage ratio and used in this research. Then DC link connected to Voltage Source Inverter (VSI which interconnected with utility grid and controlled by current control method. The total installed capacity of hybrid source is 4.4 kW. Wind turbine uses PMSG along with full bridge rectifier. To maximize and stabilize the generated power, MPPT fuzzy is used. Result from the simulation shows that converter capable to maintain maximum power whether from PV and wind turbine which canalized to utility grid in various irradiation condition, wind speed, and grid load alteration.

  1. Awake craniotomy for cortical language mapping and resection of an arteriovenous malformation adjacent to eloquent areas under general anesthesia — A hybrid approach

    Directory of Open Access Journals (Sweden)

    Pree Nimmannitya

    2015-12-01

    Full Text Available Surgery of arteriovenous malformation (AVM is sometimes challenging and carries a high risk of morbidity, especially when the AVM is located in an eloquent area of the brain. Unlike gliomas, awake craniotomy has not been widely used for resection of AVM. The authors present a case of an AVM in the left frontal lobe which was successfully removed with the aid of awake craniotomy with cortical language mapping. In conclusion, awake craniotomy for functional cortical mapping is beneficial for AVM resection, especially when the lesion is located in or adjacent to eloquent areas of the brain. A hybrid approach with functional mapping in the awake condition and AVM resection under general anesthesia may be useful in selected cases. Furthermore, en bloc resection with the nidus embedded in the brain parenchyma may be a useful means of removal to reduce operation time and intraoperative blood loss if there is no apparent functional cortex surrounding the AVM, as in the present case.

  2. Large Area Nano-transfer Printing of Sub-50-nm Metal Nanostructures Using Low-cost Semi-flexible Hybrid Templates.

    Science.gov (United States)

    Nagel, Robin D; Haeberle, Tobias; Schmidt, Morten; Lugli, Paolo; Scarpa, Giuseppe

    2016-12-01

    In this work, we present a method for printing metal micro- and nanopatterns down to sub-50-nm feature sizes using replicated, defect-tolerant stamps made out of OrmoStamp®; material. The relevant parameters for a successful transfer over large areas were investigated and yields above 99 % have been achieved. Comparing our results to conventional nano-transfer printing using PDMS stamps, we find that the more rigid hybrid polymer used here prevents unintended transfer from interspaces between structures of large distance due to roof collapse and deformation of nano-sized structures due to lateral collapse. Yet, our stamps are flexible enough to ensure intimate contact with the underlying substrate over large areas even in the presence of defect particles. Additionally, the presented patterning technique is resist-, solvent-, and chemical-free and is therefore ideally suited for applications in organic nanoelectronics where standard nanostructuring methods can harm or destroy the organic material. PMID:26976429

  3. Plant Type and Its Effects on Canopy Structure at Heading Stage in Various Ecological Areas for a Two-line Hybrid Rice Combination, Liangyoupeijiu

    Institute of Scientific and Technical Information of China (English)

    LU Chuan-gen; HU Ning; YAO Ke-min; XIA Shi-jian; QI Qing-ming

    2010-01-01

    A two-line hybrid rice combination, Liangyoupeijiu, was used to estimate several factors of plant type, and environmental models for these factors at the heading stage were established using the data of eight ecological experimental sites in 2006 and 2007. According to climatic data from 1951 to 2005, the differences in those factors and their effects on plant canopy were analyzed for four rice cropping areas in China, including South China, the middle-lower reaches of the Yangtze River, Sichuan Basin, and river valley in Yunnan, China. The thickness of leaf layer (the distance from pulvinus of the third leaf from the top to the tip of flag leaf) and distribution of leaf area could be used as candidate indices for the plant type of a rice canopy.

  4. Large Area Nano-transfer Printing of Sub-50-nm Metal Nanostructures Using Low-cost Semi-flexible Hybrid Templates

    Science.gov (United States)

    Nagel, Robin D.; Haeberle, Tobias; Schmidt, Morten; Lugli, Paolo; Scarpa, Giuseppe

    2016-03-01

    In this work, we present a method for printing metal micro- and nanopatterns down to sub-50-nm feature sizes using replicated, defect-tolerant stamps made out of OrmoStamp®; material. The relevant parameters for a successful transfer over large areas were investigated and yields above 99 % have been achieved. Comparing our results to conventional nano-transfer printing using PDMS stamps, we find that the more rigid hybrid polymer used here prevents unintended transfer from interspaces between structures of large distance due to roof collapse and deformation of nano-sized structures due to lateral collapse. Yet, our stamps are flexible enough to ensure intimate contact with the underlying substrate over large areas even in the presence of defect particles. Additionally, the presented patterning technique is resist-, solvent-, and chemical-free and is therefore ideally suited for applications in organic nanoelectronics where standard nanostructuring methods can harm or destroy the organic material.

  5. Photodiode read-out of the ALICE photon spectrometer $PbWO_{4}$ crystals

    CERN Document Server

    Man'ko, V I; Sibiryak, Yu; Volkov, M; Klovning, A; Maeland, O A; Odland, O H; Rongved, R; Skaali, B

    1999-01-01

    Proposal of abstract for LEB99, Snowmass, Colorado, 20-24 September 1999The PHOton Spectrometer of the ALICE experiment is an electromagnetic calorimeter of high granularity consisting of 17280 lead-tungstate (PWO) crystals of dimensions 22x22x180 mm3, read out by large-area PIN-diodes with very low-noise front-end electronics. The crystal assembly is operated at -25C to increase the PWO light yield. A 16.1x17.1 mm2 photodiode, optimized for the PWO emissio spectrum at 400-500 nm, has been developed. The 20x20 mm2 preamplifier PCB is attached to the back side of the diode ceramic frame. The charge sensitive preamplifier is built in discrete logic with two input JFETs for optimum matching with the ~150pF PIN-diode. A prototype shaper has been designed and built in discrete logic. For a detector matrix of 64 units the measured ENCs are between 450-550e at -25C. Beam tests demonstrate that the required energy resolution is reached.Summary:The PHOton Spectrometer of the ALICE experiment is an electromagnetic calo...

  6. Organic Photodiodes: The Future of Full Color Detection and Image Sensing.

    Science.gov (United States)

    Jansen-van Vuuren, Ross D; Armin, Ardalan; Pandey, Ajay K; Burn, Paul L; Meredith, Paul

    2016-06-01

    Major growth in the image sensor market is largely as a result of the expansion of digital imaging into cameras, whether stand-alone or integrated within smart cellular phones or automotive vehicles. Applications in biomedicine, education, environmental monitoring, optical communications, pharmaceutics and machine vision are also driving the development of imaging technologies. Organic photodiodes (OPDs) are now being investigated for existing imaging technologies, as their properties make them interesting candidates for these applications. OPDs offer cheaper processing methods, devices that are light, flexible and compatible with large (or small) areas, and the ability to tune the photophysical and optoelectronic properties - both at a material and device level. Although the concept of OPDs has been around for some time, it is only relatively recently that significant progress has been made, with their performance now reaching the point that they are beginning to rival their inorganic counterparts in a number of performance criteria including the linear dynamic range, detectivity, and color selectivity. This review covers the progress made in the OPD field, describing their development as well as the challenges and opportunities. PMID:27111541

  7. Hybrid MOS-PN photodiode with positive feedback for pulse-modulation imaging.

    Science.gov (United States)

    Sallin, Denis; Koukab, Adil; Kayal, Maher

    2014-06-16

    A new type of CMOS compatible photodetector, exhibiting intrinsic light-to-time conversion, is proposed. Its main objective is to start the time-to-digital conversion directly at its output, thereby avoiding the cumbersome analog processing. The operation starts with an internal charge integration, followed by a positive feedback, and a sharp switching-current. The device, consisting of a deeply depleted MOS structure controlling the conduction of a forward-based PN diode, is presented and its operation explained. TCAD simulations are used to show the effects of semiconductor parameters and bias conditions. The photodetector and its detection circuit are designed and fabricated in a 0.18µm CMOS process. Measurements of this new device under different biasing and illumination conditions show highly promising properties in terms of linearity, internal gain, and noise performances.

  8. Prioritization of strategies for protected area management with local people using the hybrid SWOT-AHP analysis: the case of Kakum conservation area, Ghana

    Directory of Open Access Journals (Sweden)

    Raphael Foli Fiagbomeh

    2015-05-01

    Full Text Available The contribution of protected areas towards conservation and protection of biodiversity cannot be over emphasized. Likewise, the dependence of local communities on forest and natural resources cannot be overlooked. Hence for the long term viability of forest reserves and wildlife protected area, the relationship of local people living close to these areas are of key importance if conflict of use can be mitigated. Admittedly, decision-making with respect to forest resource use and protection are complex due to the multiple interests of the major stakeholders. Stakeholder involvement in the planning, management and policy analysis can help resolve conflicts, and increase the commitment of local people to support conservation of protected areas. In this paper, we employ the SWOT-AHP methodology, with the aid of the Priority Estimation Tool (PriEsT, to evaluate and prioritize three management strategies for the Kakum conservation area in Ghana, as a means to facilitate conservation while ensuring benefits to local people. Considering the management objectives of the conservation area, seventeen SWOT sub-factors were identified and used in rating the three alternative management strategies. Among the strength sub-factors, enforcement of protection regulations (S4 is the most important. Similarly, limited funds for patrolling and outreach programs (W3, local people’s interest in alternative livelihood (O4 and the presence of illegal activities (T3 are the most important weakness, opportunity and threat sub-factors respectively. The management strategy “institute village committees to support monitoring and protection of resources” (A1 has the highest priority rating, indicating that management authorities must pay more attention to collaborative management. We propose that to improve on protected area management in Ghana, more management strategy studies must be conducted. However, these studies may apply the fuzzy AHP technique since it is

  9. Advanced active quenching circuits for single-photon avalanche photodiodes

    Science.gov (United States)

    Stipčević, M.; Christensen, B. G.; Kwiat, P. G.; Gauthier, D. J.

    2016-05-01

    Commercial photon-counting modules, often based on actively quenched solid-state avalanche photodiode sensors, are used in wide variety of applications. Manufacturers characterize their detectors by specifying a small set of parameters, such as detection efficiency, dead time, dark counts rate, afterpulsing probability and single photon arrival time resolution (jitter), however they usually do not specify the conditions under which these parameters are constant or present a sufficient description. In this work, we present an in-depth analysis of the active quenching process and identify intrinsic limitations and engineering challenges. Based on that, we investigate the range of validity of the typical parameters used by two commercial detectors. We identify an additional set of imperfections that must be specified in order to sufficiently characterize the behavior of single-photon counting detectors in realistic applications. The additional imperfections include rate-dependence of the dead time, jitter, detection delay shift, and "twilighting." Also, the temporal distribution of afterpulsing and various artifacts of the electronics are important. We find that these additional non-ideal behaviors can lead to unexpected effects or strong deterioration of the system's performance. Specifically, we discuss implications of these new findings in a few applications in which single-photon detectors play a major role: the security of a quantum cryptographic protocol, the quality of single-photon-based random number generators and a few other applications. Finally, we describe an example of an optimized avalanche quenching circuit for a high-rate quantum key distribution system based on time-bin entangled photons.

  10. Wavelength-band-tuning photodiodes by using various metallic nanoparticles.

    Science.gov (United States)

    Hwang, J D; Chan, Y D; Chou, T C

    2015-11-20

    Wavelength-band tuning was easily achieved in this work by depositing various metallic nanoparticles (NPs) on silicon p-n junction photodiodes (PDs). The normalization spectrum of the PDs deposited with gold (Au) NPs reveals a high-wavelength pass characteristic; the PDs with silver (Ag) NPs coating behave as a low-wavelength pass, and the PDs with Au/Ag bimetallic NPs appear as a band-wavelength pass PD with a full width at half maximum of 450 ∼ 630 nm. The issue of wavelength-band tuning is due to the different plasmonic resonance wavelengths associated with various metallic NPs. The extinction plot shows the Au NPs have a longer resonant wavelength of about 545 nm, leading to the incident light with a wavelength near or longer than 545 nm scattered by the Au NPs, hence a high-wavelength pass PD. The PDs with Ag NPs, due to the Ag NPs, exhibit a short resonant wavelength of 430 nm, and the short-wavelength incident light is absorbed near the silicon (Si) surface, where the Ag NPs is atop it. The shorter-wavelength incident light is enhanced by the plasmonic resonance of Ag NPs, making a low-wavelength PD. The Au/Ag NPs presents a resonant wavelength of 500 nm between the Au and Ag NPs. For the incident light with a wavelength close to 500 nm, a constructive interference causes a substantial increase in the local electromagnetic field, hence leading to a band-wavelength pass PD.

  11. Current-mode CMOS hybrid image sensor

    Science.gov (United States)

    Benyhesan, Mohammad Kassim

    Digital imaging is growing rapidly making Complimentary Metal-Oxide-Semi conductor (CMOS) image sensor-based cameras indispensable in many modern life devices like cell phones, surveillance devices, personal computers, and tablets. For various purposes wireless portable image systems are widely deployed in many indoor and outdoor places such as hospitals, urban areas, streets, highways, forests, mountains, and towers. However, the increased demand on high-resolution image sensors and improved processing features is expected to increase the power consumption of the CMOS sensor-based camera systems. Increased power consumption translates into a reduced battery life-time. The increased power consumption might not be a problem if there is access to a nearby charging station. On the other hand, the problem arises if the image sensor is located in widely spread areas, unfavorable to human intervention, and difficult to reach. Given the limitation of energy sources available for wireless CMOS image sensor, an energy harvesting technique presents a viable solution to extend the sensor life-time. Energy can be harvested from the sun light or the artificial light surrounding the sensor itself. In this thesis, we propose a current-mode CMOS hybrid image sensor capable of energy harvesting and image capture. The proposed sensor is based on a hybrid pixel that can be programmed to perform the task of an image sensor and the task of a solar cell to harvest energy. The basic idea is to design a pixel that can be configured to exploit its internal photodiode to perform two functions: image sensing and energy harvesting. As a proof of concept a 40 x 40 array of hybrid pixels has been designed and fabricated in a standard 0.5 microm CMOS process. Measurement results show that up to 39 microW of power can be harvested from the array under 130 Klux condition with an energy efficiency of 220 nJ /pixel /frame. The proposed image sensor is a current-mode image sensor which has several

  12. A room temperature LSO/PIN photodiode PET detector module that measures depth of interaction

    International Nuclear Information System (INIS)

    The authors present measurements of a 4 element PET detector module that uses a 2 x 2 array of 3 mm square PIN photodiodes to both measure the depth of interaction (DOI) and identify the crystal of interaction. Each photodiode is coupled to one end of a 3 x 3 x 25 mm LSO crystal, with the opposite ends of all 4 crystals attached to a single PMT that provides a timing signal and initial energy discrimination. Each LSO crystal is coated with a ''lossy'' reflector, so the ratio of light detected in the photodiode and PMT depends on the position of interaction in the crystal, and is used to determine this position on an event by event basis. This module is operated at +25 C with a photodiode amplifier peaking time of 2 micros. When excited by a collimated beam of 511 keV photons at the photodiode end of the module (i.e. closest to the patient), the DOI resolution is 4 mm fwhm and the crystal of interaction is identified correctly 95% of the time. When excited at the opposite end of the module, the DOI resolution is 13 mm fwhm and the crystal of interaction is identified correctly 73% of the time. The channel to channel variations in performance are minimal

  13. Three hydrogenated amorphous silicon photodiodes stacked for an above integrated circuit colour sensor

    Energy Technology Data Exchange (ETDEWEB)

    Gidon, Pierre; Giffard, Benoit; Moussy, Norbert; Parrein, Pascale; Poupinet, Ludovic [CEA-LETI, MINATEC, CEA-Grenoble, 17 rue des Martyrs, 38054 Grenoble Cedex 9 (France)

    2010-03-15

    We present theoretical simulation and experimental results of a new colour pixel structure. This pixel catches the light in three stacked amorphous silicon photodiodes encompassed between transparent electrodes. The optical structure has been simulated for signal optimisation. The thickness of each stacked layer is chosen in order to absorb the maximum of light and the three signals allow to linearly calculate the CIE colour coordinates 1 with minimum error and noise. The whole process is compatible with an above integrated circuit (IC) approach. Each photodiode is an n-i-p structure. For optical reason, the upper diode must be controlled down to 25 nm thickness. The first test pixel structure allows a good recovering of colour coordinates. The measured absorption spectrum of each photodiode is in good agreement with our simulations. This specific stack with three photodiodes per pixel totalises two times more signal than an above IC pixel under a standard Bayer pattern 2,3. In each square of this GretagMacbeth chart is the reference colour on the right and the experimentally measured colour on the left with three amorphous silicon photodiodes per pixel. (Abstract Copyright [2010], Wiley Periodicals, Inc.)

  14. Gamma-ray spectroscopy using CsI and silicon Pine photodiodes

    Energy Technology Data Exchange (ETDEWEB)

    Jeon, Taehoon; Jeong, Sungyeop; Kwon, Soocheon [Sungwoo E and T, Seoul (Korea, Republic of)

    2010-07-01

    The Finger generally uses two detector modules which are parallel for each other. They are all scintillator coupled photodiode detectors and the thickness of coupled photodiode detectors and the thickness of each scintillator is designed to absorb about 80% of radiations entering the scintillator. In order to acquire more detail information and reduce the error of measuring the ratio, the sensitivity of each detector should be improved. In this study, we proposed a new idea to increase the sensitivity of each detector by using two parallel detector modules for gamma-ray radiography. The aim of this work was to evaluate the ability of the new detector to improve the signal to noise ration, and to establish the methodology for counting in the new detector module with coincidence spectroscopy circuit. For this purpose, we optimized the scintillator thickness for {sup 60}Co by the Monte Carlo simulation code and the characteristics of operation and noise tests were accomplished after Scintillator coupling. We fabricated the Pine photodiode coupled with crystal for the Finger. We performed experiments and analyzed the results concentrating on the characteristics of signal and noise with Pine photodiode and CSR to detect high energy gamma and dominant factors to minimize system noise were capacitance than dark current of photodiode. As a result of measurement using the two parallel detector modules in this study, the sensitivity was considerably improved. We proved that our detector system is reliable for Finger.

  15. Rapid Genotyping of the Human Renin (REN Gene by the LightCycler® Instrument: Identification of Unexpected Nucleotide Substitutions within the Selected Hybridization Probe Area

    Directory of Open Access Journals (Sweden)

    Line Wee

    2010-01-01

    Full Text Available Preeclampsia is a serious disorder affecting nearly 3% of all in the Western world. It is associated with hypertension and proteinuria, and several lines of evidence suggest that the renin-angiotensin system (RAS may be involved in the development of hypertension at different stages of a preeclamptic pregnancy. In this study, we developed rapid genotyping assays on the LightCycler® instrument to allow the detection of genetic variants in the renin gene (REN that may predispose to preeclampsia. The method is based on real-time PCR and allele-specific hybridization probes, followed by fluorescent melting curve analysis to expose a change in melting temperature (Tm. Ninety-two mother-father-child triads (n=276 from preeclamptic pregnancies were genotyped for three haplotype-tagging single nucleotide polymorphisms (htSNPs in REN. All three htSNPs (rs5705, rs1464816 and rs3795575 were successfully genotyped. Furthermore, two unexpected nucleotide substitutions (rs11571084 and rs61757041 were identified within the selected hybridization probe area of rs1464816 and rs3795575 due to aberrant melting peaks. In conclusion, genotyping on the LightCycler® instrument proved to be rapid and highly reproducible. The ability to uncover additional nucleotide substitutions is particularly important in that it allows the identification of potentially etiological variants that might otherwise be overlooked by other genotyping methods.

  16. Online management of lithium-ion battery based on time-triggered controller area network for fuel-cell hybrid vehicle applications

    Science.gov (United States)

    Li, Xiangjun; Li, Jianqiu; Xu, Liangfei; Ouyang, Minggao; Han, Xuebing; Lu, Languang; Lin, Chengtao

    This paper introduces a state of charge (SOC) estimation algorithm that was implemented for an automotive lithium-ion battery system used in fuel-cell hybrid vehicles (FCHVs). The proposed online control strategy for the lithium-ion battery, based on the Ah current integration method and time-triggered controller area network (TTCAN), incorporates a signal filter and adaptive modifying concepts to estimate the Li 2MnO 4 battery SOC in a timely manner. To verify the effectiveness of the proposed control algorithm, road test experimentation was conducted with an FCHV using the proposed SOC estimation algorithm. It was confirmed that the control technique can be used to effectively manage the lithium-ion battery and conveniently estimate the SOC.

  17. An absorption detection approach for multiplexed capillary electrophoresis using a linear photodiode array.

    Science.gov (United States)

    Gong, X; Yeung, E S

    1999-11-01

    A novel absorption detection method for highly multiplexed capillary electrophoresis is presented for zone electrophoresis and for micellar electrokinetic chromatography. The approach involves the use of a linear photodiode array on which a capillary array is imaged by a camera lens. Either a tungsten lamp or a mercury lamp can be used as the light source such that all common wavelengths for absorption detection are accessible by simply interchanging narrow-band filters. Each capillary spans several diodes in the photodiode array for absorption measurements. Over 100 densely packed capillaries can be monitored by a single photodiode array element with 1024 diodes. The detection limit for rhodamine 6G for each capillary in the multiplexed array is ∼1.8 × 10(-)(8) M injected (S/N = 2). The cross-talk between adjacent capillaries is less than 0.2%. Simultaneous analysis of 96 samples is demonstrated. PMID:21662842

  18. Fast, Deep-Record-Length, Fiber-Coupled Photodiode Imaging Array for Plasma Diagnostics

    Science.gov (United States)

    Brockington, Samuel; Case, Andrew; Witherspoon, F. Douglas

    2015-11-01

    HyperV Technologies has been developing an imaging diagnostic comprised of an array of fast, low-cost, long-record-length, fiber-optically-coupled photodiode channels to investigate plasma dynamics and other fast, bright events. By coupling an imaging fiber bundle to a bank of amplified photodiode channels, imagers and streak imagers can be constructed. By interfacing analog photodiode systems directly to commercial analog-to-digital converters and modern memory chips, a scalable solution for 100 to 1000 pixel systems with 14 bit resolution and record-lengths of 128k frames has been developed. HyperV is applying these techniques to construct a prototype 1000 Pixel framing camera with up to 100 Msamples/sec rate and 10 to 14 bit depth. Preliminary experimental results as well as future plans will be discussed. Work supported by USDOE Phase 2 SBIR Grant DE-SC0009492.

  19. Reverse current reduction of Ge photodiodes on Si without post-growth annealing Invited Paper

    Institute of Scientific and Technical Information of China (English)

    Sungbong Park; Shinya Takita; Yasuhiko; Ishikawa; Jiro Osaka; Kazumi Wada

    2009-01-01

    A new approach to reduce the reverse current of Ge pin photodiodes on Si is presented, in which an i-Si layer is inserted between Ge and top Si layers to reduce the electric field in the Ge layer. Without post- growth annealing, the reverse current density is reduced to ~10 mA/cm2 at -1 V, i.e., over one order of magnitude lower than that of the reference photodiode without i-Si layer. However, the responsivity of the photodiodes is not severely compromised. This lowered-reverse-current is explained by band-pinning at the i-Si/i-Ge interface. Barrier lowering mechanism induced by E-field is also discussed. The presented "non-thermal" approach to reduce reverse current should accelerate electronics-photonics convergence by using Ge on the Si complementary metal oxide semiconductor (CMOS) platform.

  20. Study of commercial Si-PIN photodiode as an x-ray detector

    International Nuclear Information System (INIS)

    Two commercial Si-PIN photodiode were evaluated as a low cost X-ray detector in conjunction with forward biased FET preamplifiers. Evaluation was done at room temperature and at a temperature of about -10degC using X-ray spectroscopy amplifier with 241Am radio active source. The results shows 700 eV full width at half maximum for 241Am γ-ray (59.5 keV) with S5821-02 from Hamamatsu Photonics at low temperature and 800 eV with S1722-02 at the same conditions. The S1722-02 photodiode showed almost flat response up to 20 keV X-ray energy. The improvement of photodiode and FET cooling system and proper selection of FET will be expected to show better resolution. (author)

  1. High-performance evanescently-coupled uni-traveling-carrier photodiodes

    Institute of Scientific and Technical Information of China (English)

    Zhang Yun-Xiao; Liao Zai-Yi; Wang Wei

    2009-01-01

    A new evanescently-coupled uni-traveling-carrier photodiode (EC-UTC PD) based on a multimode diluted waveguide (MDW) structure is fabricated, analysed and characterized. Optical and electrical characteristics of the device are investigated. The excellent characteristics are demonstrated such as a responsivity of 0.36 A/W, a bandwidth of 11.5 GHz and a small-signal 1-dB compression current greater than 18 mA at 10 GHz. The saturation current is significantly improved compared with those of similar evanescently-coupled pin photodiodes. The radio frequency (RF)bandwidth can be further improved by eliminating RF losses induced by the cables, the probe and the bias tee between the photodiode and the spectrum analyzer.

  2. Studies Supporting PMT Characterization for the IceCube Collaboration: Precise Photodiode Calibration

    CERN Document Server

    Van De Pontseele, Wouter

    2015-01-01

    A laboratory set-up has been developed to more precisely measure the DOM optical sensitivity as a function of angle and wavelength. DOMs are calibrated in water using a broad beam of light whose intensity is measured with a NIST calibrated photodiode. This study will refine the current knowledge of the IceCube response and lay a foundation for future precision upgrades to the detector. Good understanding of the photodiode readout is indispensable for the DOM calibration. Corrections to the photodiode measurements due to the amplifier circuit were investigated. To accomplish this, a general software structure has been added to the existing framework. Because the set of parameters in the source sector is still growing, modularity and a high level of automation were important objectives. The software features a large array of graphical tools to intercept problems at low level while the analysis can be easily adapted to the needs of foreseeable situations.

  3. Development of Fuses for Protection of Geiger-Mode Avalanche Photodiode Arrays

    Science.gov (United States)

    Grzesik, Michael; Bailey, Robert; Mahan, Joe; Ampe, Jim

    2015-11-01

    Current-limiting fuses composed of Ti/Al/Ni were developed for use in Geiger-mode avalanche photodiode arrays for each individual pixel in the array. The fuses were designed to burn out at ˜4.5 × 10-3 A and maintain post-burnout leakage currents less than 10-7 A at 70 V sustained for several minutes. Experimental fuse data are presented and successful incorporation of the fuses into a 256 × 64 pixel InP-based Geiger-mode avalanche photodiode array is reported.

  4. A near infrared organic photodiode with gain at low bias voltage

    Energy Technology Data Exchange (ETDEWEB)

    Campbell, Ian H [Los Alamos National Laboratory; Crone, Brian K [Los Alamos National Laboratory

    2009-01-01

    We demonstrate an organic photodiode with near infrared optical response out to about 1100 run with a gain of {approx}10 at 1000 run under 5V reverse bias. The diodes employ a soluble naphthalocyanine with a peak absorption coefficient of {approx}10{sup 5} cm{sup -1} at 1000 nm. In contrast to most organic photodiodes, no exciton dissociating material is used. At zero bias, the diodes are inefficient with an external quantum efficiency of {approx} 10{sup -2}. In reverse bias, large gain occurs and is linear with bias voltage above 4V. The observed gain is consistent with a photoconductive gain mechanism.

  5. Comparative Study of Gamma Radiation Effects on Solar Cells, Photodiodes, and Phototransistors

    Directory of Open Access Journals (Sweden)

    Dejan Nikolić

    2013-01-01

    Full Text Available This paper presents the behavior of various optoelectronic devices after gamma irradiation. A number of PIN photodiodes, phototransistors, and solar panels have been exposed to gamma irradiation. Several types of photodiodes and phototransistors were used in the experiment. I-V characteristics (current dependance on voltage of these devices have been measured before and after irradiation. The process of annealing has also been observed. A comparative analysis of measurement results has been performed in order to determine the reliability of optoelectronic devices in radiation environments.

  6. Hybrid and electric low-noise cars cause an increase in traffic accidents involving vulnerable road users in urban areas.

    Science.gov (United States)

    Brand, Stephan; Petri, Maximilian; Haas, Philipp; Krettek, Christian; Haasper, Carl

    2013-01-01

    Due to resource scarcity, the number of low-noise and electric cars is expected to increase rapidly. The frequent use of these cars will lead to a significant reduction of traffic related noise and pollution. On the other hand, due to the adaption and conditioning of vulnerable road users the number of traffic accidents involving pedestrians and bicyclists is postulated to increase as well. Children, older people with reduced eyesight and the blind are especially reliant on a combination of acoustic and visual warning signals with approaching or accelerating vehicles. This is even more evident in urban areas where the engine sound is the dominating sound up to 30 kph (kilometres per hour). Above this, tyre-road interaction is the main cause of traffic noise. With the missing typical engine sound a new sound design is necessary to prevent traffic accidents in urban areas. Drivers should not be able to switch the sound generator off. PMID:23083396

  7. Hybrid and electric low-noise cars cause an increase in traffic accidents involving vulnerable road users in urban areas.

    Science.gov (United States)

    Brand, Stephan; Petri, Maximilian; Haas, Philipp; Krettek, Christian; Haasper, Carl

    2013-01-01

    Due to resource scarcity, the number of low-noise and electric cars is expected to increase rapidly. The frequent use of these cars will lead to a significant reduction of traffic related noise and pollution. On the other hand, due to the adaption and conditioning of vulnerable road users the number of traffic accidents involving pedestrians and bicyclists is postulated to increase as well. Children, older people with reduced eyesight and the blind are especially reliant on a combination of acoustic and visual warning signals with approaching or accelerating vehicles. This is even more evident in urban areas where the engine sound is the dominating sound up to 30 kph (kilometres per hour). Above this, tyre-road interaction is the main cause of traffic noise. With the missing typical engine sound a new sound design is necessary to prevent traffic accidents in urban areas. Drivers should not be able to switch the sound generator off.

  8. Dark Current Reduction of P3HT-Based Organic Photodiode Using a Ytterbium Fluoride Buffer Layer in Electron Transport

    CERN Document Server

    Lim, Seong Bin; Kim, Ki Tae; Oh, Se Young

    2016-01-01

    Photodiodes are widely used to convert lights into electrical signals. The conventional silicon (Si) based photodiodes boast high photoelectric conversion efficiency and detectivity. However, in general, inorganic-based photodiodes have low visible wavelength sensitivity due to their infrared wavelength absorption. Recently, electrical conducting polymer-based photodiodes have received significant attention due to their flexibility, low cost of production and high sensitivity of visible wavelength ranges. In the present work, we fabricated an organic photodiode (OPD) consisting of ITO/ NiOx/ P3HT:PC60BM/ YbF3/ Al. In the OPD, a yitterbium fluoride (YbF3) buffer layer was used as the electron transport layer. The OPD was analyzed for its optical-electrical measurements, including J-V characteristics, detectivity and dynamic characteristics. We have investigated the physical effects of the YbF3 buffer layer on the performance of OPD such as its carrier extraction, leakage current and ohmic characteristics.

  9. Investigation of CMOS photodiodes integrated on an ASIC by a 0.5-µm analog CMOS process

    Science.gov (United States)

    Luo, H.; Ricklefs, U.; Hillmer, H.

    2010-04-01

    The characteristics of photodiodes integrated on CMOS ASICs depend on wavelength of radiation, structure of the photodiode itself and the parameters of the process of production. In this paper, the influence of the structure of integrated CMOS photodiodes produced in a standard 0.5 μm mixed signal CMOS process on the sensitivity is described. These photodiodes are used as image sensor elements arranged in an array for noncontact optoelectronic measurements. Models of integrated photodiodes distinguish the lateral and the vertical region of the photodiodes. The standard 0.5 μm CMOS process offers three types of pn-junctions: n+/p-substrate, p+/n-well and n-well/p-substrate. Based on our previous research and on the results from other authors the p+/n-well is chosen due to its better sensitivity and isolation against other structures. The local sensitivity is measured with a scanning setup by applying a diffraction limited spot spot of light on the surface of the diodes. Independent of the wavelength of radiation the charge carriers are generated mainly in the lateral region and not - as expected - in the vertical region. The maximum value of the local sensitivity is found in photodiodes with subdivided p+ regions showing a distance of 1.5 μm between these regions in the space between these two adjacent p+ regions. This local sensitivity is three times smaller than that of a reference PIN photodiode. According to this result, the new photodiodes will be constructed with optimized geometries. All examined structures of this type of photodiodes show a maximal spectral sensitivity in the range of 650 nm - 700 nm.

  10. Human mixed infections of Leishmania spp. and Leishmania-Trypanosoma cruzi in a sub Andean Bolivian area: identification by polymerase chain reaction/hybridization and isoenzyme

    Directory of Open Access Journals (Sweden)

    B Bastrenta

    2003-03-01

    Full Text Available Parasites belonging to Leishmania braziliensis, Leishmania donovani, Leishmania mexicana complexes and Trypanosoma cruzi (clones 20 and 39 were searched in blood, lesions and strains collected from 28 patients with active cutaneous leishmaniasis and one patient with visceral leishmaniasis. PCR-hybridization with specific probes of Leishmania complexes (L. braziliensis, L. donovani and L. mexicana and T. cruzi clones was applied to the different DNA samples. Over 29 patients, 8 (27.6% presented a mixed infection Leishmania complex species, 17 (58.6% a mixed infection Leishmania-T. cruzi, and 4 (13.8% a multi Leishmania-T. cruzi infection. Several patients were infected by the two Bolivian major clones 20 and 39 of T. cruzi (44.8%. The L. braziliensis complex was more frequently detected in lesions than in blood and a reverse result was observed for L. mexicana complex. The polymerase chain reaction-hybridization design offers new arguments supporting the idea of an underestimated rate of visceral leishmanisis in Bolivia. Parasites were isolated by culture from the blood of two patients and lesions of 10 patients. The UPGMA (unweighted pair-group method with arithmetic averages dendrogram computed from Jaccard's distances obtained from 11 isoenzyme loci data confirmed the presence of the three Leishmania complexes and undoubtedly identified human infections by L. (V. braziliensis, L. (L. chagasi and L. (L. mexicana species. Additional evidence of parasite mixtures was visualized through mixed isoenzyme profiles, L. (V. braziliensis-L. (L. mexicana and Leishmania spp.-T. cruzi.The epidemiological profile in the studied area appeared more complex than currently known. This is the first report of parasitological evidence of Bolivian patients with trypanosomatidae multi infections and consequences on the diseases' control and patient treatments are discussed.

  11. High quality MgB{sub 2} thick films and large-area films fabricated by hybrid physical-chemical vapor deposition with a pocket heater

    Energy Technology Data Exchange (ETDEWEB)

    Wang, S F; Chen, Ke; Li, Qi; Xi, X X [Department of Physics, Pennsylvania State University, University Park, PA 16802 (United States); Lee, C-H; Soukiassian, A; DeFrain, R; Redwing, J M; Schlom, D G [Department of Materials Science and Engineering, Pennsylvania State University, University Park, PA 16802 (United States); Lamborn, D R [Department of Chemical Engineering, Pennsylvania State University, University Park, PA 16802 (United States)], E-mail: suw16@psu.edu

    2008-08-15

    A hybrid physical-chemical vapor deposition process using a pocket heater was developed for the growth of high quality epitaxial large-area MgB{sub 2} thin films and c-axis textured MgB{sub 2} thick films. This technique is able to independently control the substrate and Mg source temperatures and maintain sufficient Mg overpressure to ensure phase stability. The two-inch large-area MgB{sub 2} thin films showed uniform superconducting properties with the superconducting transition temperature T{sub c} of about 40 K, residual resistivity ratio (RRR) of about 10, and critical current density J{sub c} of about 10{sup 7} A cm{sup -2} (0 T, 5 K). The thick films ({approx}10 {mu}m) on sapphire substrates showed a maximum T{sub c} of 40 K and RRR of 15, and a J{sub c} of 1.6 x 10{sup 6} A cm{sup -2} at low applied magnetic fields even at 20 K. High quality thick films also have been obtained on metal substrates.

  12. Scintillation light read-out by thin photodiodes in silicon wells

    CERN Document Server

    Allier, C P; Sarro, P M; Eijk, C W E

    2000-01-01

    Several applications of X-ray and gamma ray imaging detectors, e.g. in medical diagnostics, require millimeter or sub-millimeter spatial resolution and good energy resolution. In order to achieve such features we have proposed a new type of camera, which takes advantage of micromachining technology. It consists of an array of scintillator crystals encapsulated in silicon wells with photodiodes at the bottom. Several parameters of the photodiode need to be optimised: uniformity and efficiency of the light detection, gain, electronic noise and breakdown voltage. In order to evaluate these parameters we have processed 3x3 arrays of 1.8 mm sup 2 , approx 10 mu m thick photodiodes using (1 0 0) wafers etched in a KOH solution. Their optical response at 675 nm wavelength is comparable to that of a 500 mu m thick silicon PIN diode. Their low light detection efficiency is compensated by internal amplification. Several scintillator materials have been positioned in the wells on top of the thin photodiodes, i.e. a 200 ...

  13. Geiger-Mode Avalanche Photodiode Arrays Integrated to All-Digital CMOS Circuits

    Science.gov (United States)

    Aull, Brian

    2016-01-01

    This article reviews MIT Lincoln Laboratory's work over the past 20 years to develop photon-sensitive image sensors based on arrays of silicon Geiger-mode avalanche photodiodes. Integration of these detectors to all-digital CMOS readout circuits enable exquisitely sensitive solid-state imagers for lidar, wavefront sensing, and passive imaging. PMID:27070609

  14. Photoionization of Trapped Carriers in Avalanche Photodiodes to Reduce Afterpulsing During Geiger-Mode Photon Counting

    Science.gov (United States)

    Krainak, Michael A.

    2005-01-01

    We reduced the afterpulsing probability by a factor of five in a Geiger-mode photon-counting InGaAs avalanche photodiode by using sub-band-gap (lambda = 1.95 micron) laser diode illumination, which we believe photoionizes the trapped carriers.

  15. Geiger-Mode Avalanche Photodiode Arrays Integrated to All-Digital CMOS Circuits

    OpenAIRE

    Brian Aull

    2016-01-01

    This article reviews MIT Lincoln Laboratory's work over the past 20 years to develop photon-sensitive image sensors based on arrays of silicon Geiger-mode avalanche photodiodes. Integration of these detectors to all-digital CMOS readout circuits enable exquisitely sensitive solid-state imagers for lidar, wavefront sensing, and passive imaging.

  16. Elimination or minimisation of optoelectronic crosstalk between photodiodes and electronic devices in OEIC on Si

    NARCIS (Netherlands)

    Zhou, M.-J.; Holleman, J.; Wallinga, H.

    1994-01-01

    The optoelectronic crosstalk between photodiodes and electronic devices is observed and investigated in OEICs based on silicon. Results show that the phenomenon is closely related to the diffusion of minority carriers, generated by photon absorption. The crosstalk can be eliminated or minimised by e

  17. HPLC-photodiode array detection analysis of curcuminoids in Curcuma species indigenous to Indonesia

    NARCIS (Netherlands)

    Bos, Rein; Windono, Tri; Woerdenbag, Herman J.; Boersma, Ykelien L.; Koulman, Albert; Kayser, Oliver

    2007-01-01

    An optimized HPLC method with photodiode array detection was developed and applied to analyse the curcuminoids curcumin, demethoxycurcumin, and bis-demethoxycurcumin in rhizomes of Curcuma mangga Val &. v. Zijp, C. heyneana Val. & v. Zijp, C. aeruginosa Roxb. and C. soloensis Val. (Zingiberaceae), i

  18. High-speed optical receivers with integrated photodiode in nanoscale CMOS

    CERN Document Server

    Tavernier, Filip

    2011-01-01

    This book describes the design of optical receivers that use the most economical integration technology, while enabling performance that is typically only found in very expensive devices. To achieve this, all necessary functionality, from light detection to digital output, is integrated on a single piece of silicon. All building blocks are thoroughly discussed, including photodiodes, transimpedance amplifiers, equalizers and post amplifiers.

  19. Geiger-Mode Avalanche Photodiode Arrays Integrated to All-Digital CMOS Circuits

    Directory of Open Access Journals (Sweden)

    Brian Aull

    2016-04-01

    Full Text Available This article reviews MIT Lincoln Laboratory's work over the past 20 years to develop photon-sensitive image sensors based on arrays of silicon Geiger-mode avalanche photodiodes. Integration of these detectors to all-digital CMOS readout circuits enable exquisitely sensitive solid-state imagers for lidar, wavefront sensing, and passive imaging.

  20. Geiger-Mode Avalanche Photodiode Arrays Integrated to All-Digital CMOS Circuits.

    Science.gov (United States)

    Aull, Brian

    2016-01-01

    This article reviews MIT Lincoln Laboratory's work over the past 20 years to develop photon-sensitive image sensors based on arrays of silicon Geiger-mode avalanche photodiodes. Integration of these detectors to all-digital CMOS readout circuits enable exquisitely sensitive solid-state imagers for lidar, wavefront sensing, and passive imaging. PMID:27070609

  1. Experimental analysis of a novel and low-cost pin photodiode dosimetry system for diagnostic radiology

    Science.gov (United States)

    Nazififard, Mohammad; Suh, Kune Y.; Mahmoudieh, Afshin

    2016-07-01

    Silicon PIN photodiode has recently found broad and exciting applications in the ionizing radiation dosimetry. In this study a compact and novel dosimetry system using a commercially available PIN photodiode (BPW34) has been experimentally tested for diagnostic radiology. The system was evaluated with clinical beams routinely used for diagnostic radiology and calibrated using a secondary reference standard. Measured dose with PIN photodiode (Air Kerma) varied from 10 to 430 μGy for tube voltages from 40 to 100 kVp and tube current from 0.4 to 40 mAs. The minimum detectable organ dose was estimated to be 10 μGy with 20% uncertainty. Results showed a linear correlation between the PIN photodiode readout and dose measured with standard dosimeters spanning doses received. The present dosimetry system having advantages of suitable sensitivity with immediate readout of dose values, low cost, and portability could be used as an alternative to passive dosimetry system such as thermoluminescent dosimeter for dose measurements in diagnostic radiology.

  2. On The Pixel Level Estimation of Pinning Voltage, Pinned Photodiode Capacitance and Transfer Gate Channel Potential

    OpenAIRE

    Goiffon, Vincent; Michelot, Julien; Magnan, Pierre; Estribeau, Magali; Marcelot, Olivier; Cervantes, Paola; Pelamatti, Alice; Martin-Gonthier, Philippe

    2013-01-01

    The pinning voltage extraction method proposed by Tan et al. is analyzed to clarify its benefits and limitations. It is demonstrated that this simple measurement can bring much more useful information than the pinning voltage, such as the pinned photodiode capacitance and the transfer gate channel potential. Objective criteria to compare the pinning voltage on different devices are also discussed.

  3. Investigation of dark current random telegraph signal in pinned photodiode CMOS image sensors

    OpenAIRE

    Goiffon, Vincent; Virmontois, Cédric; Magnan, Pierre

    2011-01-01

    The characteristics of Dark Current Random Telegraph Signal (DC-RTS), observed in Pinned PhotoDiode (PPD) CMOS Image Sensors (CIS), are investigated thanks to a dedicated analysis tool. Our results demonstrate, for the first time in PPD CIS, that this DC-RTS is due to meta-stable oxide interface SRH generation centers located in the transfer gate depletion region.

  4. A new circuit model of HgCdTe photodiode for SPICE simulation of integrated IRFPA

    Science.gov (United States)

    Saxena, Raghvendra Sahai; Saini, Navneet Kaur; Bhan, R. K.; Sharma, R. K.

    2014-11-01

    We propose a novel sub circuit model to simulate HgCdTe infrared photodiodes in a circuit simulator, like PSPICE. We have used two diodes of opposite polarity in parallel to represent the forward biased and the reverse biased behavior of an HgCdTe photodiode separately. We also connected a resistor in parallel with them to represent the ohmic shunt and a constant current source to represent photocurrent. We show that by adjusting the parameters in standard diode models and the resistor and current values, we could actually fit the measured data of our various HgCdTe photodiodes having different characteristics. This is a very efficient model that can be used for simulation of readout integrated circuit (ROIC) for HgCdTe IR photodiode arrays. This model also allows circuit level Monte Carlo simulation on a complete IRFPA at a single circuit simulator platform to estimate the non-uniformity for given processes of HgCdTe device fabrication and Si ROIC fabrication.

  5. High-sensitivity high-stability silicon photodiodes for DUV, VUV and EUV spectral ranges

    NARCIS (Netherlands)

    Shi, L.; Nihtianov, S.; Scholze, F.; Gottwald, A.; Nanver, L.K.

    2011-01-01

    In this paper, the optical and electrical performance of a newly developed silicon photodiode based on pure boron CVD technology (PureB-diodes) is introduced. Due to their extremely shallow p-n junction, with the depletion zone starting only a few nanometers below the surf ce, and nm-thin pure-boron

  6. Passivation of MBE grown InGaSb/InAs superlattice photodiodes

    Science.gov (United States)

    Hill, Cory J.; Keo, Sam S.; Mumolo, Jason M.; Gunapala, Sarath D.

    2005-01-01

    We have performed wet chemical passivation tests on InGaSb/InAs superlattice photodiode structures grown molecular beam epitaxy. The details of the devices growth and characterization as well as the results of chemical passivation involving RuCl3 and H2SO4 with SiO2 dielectric depositions are presented.

  7. Antibody levels against GLURP R2, MSP1 block 2 hybrid and AS202.11 and the risk of malaria in children living in hyperendemic (Burkina Faso) and hypo-endemic (Ghana) areas

    DEFF Research Database (Denmark)

    Adu, Bright; Cherif, Mariama K; Bosomprah, Samuel;

    2016-01-01

    with increased risk of malaria (HR 1.29; 95 % CI 1.01-1.65, p = 0.04). CONCLUSION: These findings support further development of GLURP R2 and MSP1 block 2 hybrid, perhaps as a fusion vaccine antigen targeting malaria blood stage that can be deployed in areas of varying transmission intensity....

  8. An InP/Si heterojunction photodiode fabricated by self-aligned corrugated epitaxial lateral overgrowth

    Energy Technology Data Exchange (ETDEWEB)

    Sun, Y. T., E-mail: yasun@kth.se; Omanakuttan, G.; Lourdudoss, S. [Laboratory of Semiconductor Materials, Department of Materials and Nano Physics, School of Information and Communication Technology, KTH-Royal Institute of Technology, Electrum 229, Kista S-164 40 (Sweden)

    2015-05-25

    An n-InP/p-Si heterojunction photodiode fabricated by corrugated epitaxial lateral overgrowth (CELOG) method is presented. N-InP/p-Si heterojunction has been achieved from a suitable pattern containing circular shaped openings in a triangular lattice on the InP seed layer on p-Si substrate and subsequent CELOG of completely coalesced n-InP. To avoid current path through the seed layer in the final photodiode, semi-insulating InP:Fe was grown with adequate thickness prior to n-InP growth in a low pressure hydride vapor phase epitaxy reactor. The n-InP/p-Si heterointerface was analyzed by scanning electron microscopy and Raman spectroscopy. Room temperature cross-sectional photoluminescence (PL) mapping illustrates the defect reduction effect in InP grown on Si by CELOG method. The InP PL intensity measured above the InP/Si heterojunction is comparable to that of InP grown on a native planar substrate indicating low interface defect density of CELOG InP despite of 8% lattice mismatch with Si. The processed n-InP/p-Si heterojunction photodiodes show diode characteristics from the current-voltage (I-V) measurements with a dark current density of 0.324 mA/cm{sup 2} at a reverse voltage of −1 V. Under the illumination of AM1.5 conditions, the InP/Si heterojunction photodiode exhibited photovoltaic effect with an open circuit voltage of 180 mV, a short circuit current density of 1.89 mA/cm{sup 2}, an external quantum efficiency of 4.3%, and an internal quantum efficiency of 6.4%. This demonstration of epitaxially grown InP/Si heterojunction photodiode will open the door for low cost and high efficiency solar cells and photonic integration of III-Vs on silicon.

  9. Nano- and micro-structured silicon for hybrid near-infrared photodetectors

    Science.gov (United States)

    Äńerek, V.; Głowacki, E. D.; Bednorz, M.; Demchyshyn, S.; Sariciftci, N. S.; Ivanda, M.

    2016-05-01

    Structuring surface and bulk of crystalline silicon on different length scales can significantly alter its properties and possibly improve the performance of opto-electronic devices and sensors based on silicon. Different dominant feature scales are responsible for modification of some of electronic and optical properties of silicon. Several easily reproducible chemical methods for facile structuring of silicon on nano and micro-scales, based on both electroless and anodic etching of silicon in hydrofluoric acid based etchants, and chemical anisotropic etching of silicon in basic environments, are presented. We show how successive micro and nano structuring creates hierarchical silicon surfaces, which can be used to simultaneously exploit the advantages of both structuring feature length scales. Finally, we demonstrate a large increase in photocurrent obtained from a hybrid structured silicon/organic near-infrared photodetector. Improved silicon/6,6'-dibromoindigo hybrid photodiodes were prepared by nano- and micro-structuring the silicon part of the heterojunction by wet chemical etching methods. Photocurrent and spectral responsivity were improved in comparison to planar diodes by up to two orders of magnitude by optimization of the silicon structuring process. We show that the improvement in photocurrent is not due to the increase in surface area or light trapping.

  10. Video-speed detection of the absolute position of a light point on a large-area photodetector based on luminescent waveguides.

    Science.gov (United States)

    Koeppe, Robert; Neulinger, Anton; Bartu, Petr; Bauer, S

    2010-02-01

    A large-area photosensor is presented that uses the coupling of light into the planar waveguide mode of a polycarbonate foil by luminescent dyes to extend the active area of silicon photodiodes attached to the surface of the foil in a regular pattern. The photodiode signal is directly related to the distance between the point where light is coupled into the foil and the photodiode, thus enabling a precise recovery of the position of a localized light signal hitting the foil. We present a large-area device that can trace the movement of a light point generated by a laser pointer hitting its surface. PMID:20174049

  11. Study on hybrid ground-coupled heat pump system for air-conditioning in hot-weather areas like Hong Kong

    International Nuclear Information System (INIS)

    The ground-coupled heat pump (GCHP) system is becoming attractive for air-conditioning in some moderate-weather regions due to its high energy efficiency and reliable operation capability. However, when the technology is used in buildings where there is only cooling load in hot-weather areas like Hong Kong, the heat rejected into the ground by the GCHP systems will accumulate around the ground heat exchangers (GHE). This heat accumulation will result in degradation of system performance and increment of system operating costs. This problem can be resolved by using the hybrid ground-coupled heat pump (HGCHP) system, which uses supplemental heat rejecters to reject the accumulated heat. This paper presents a practical hourly simulation model of the HGCHP system by modeling the heat transfer process of the system's main components. The computer program based on this hourly simulation model can be used to calculate the hour-by-hour operation data of the HGCHP system. As a case study, both a HGCHP system and a traditional GCHP system are designed for a hypothetic private residential building located in Hong Kong, and the economic comparisons are conducted between these two types of systems. The simulation results show that the HGCHP system can effectively solve the heat accumulation problem and reduce both the initial costs and operating costs of the air-conditioning system in the building.

  12. Optimization and Analysis of a Hybrid Energy Storage System in a Small-Scale Standalone Microgrid for Remote Area Power Supply (RAPS

    Directory of Open Access Journals (Sweden)

    Fengbing Li

    2015-05-01

    Full Text Available The analysis and application of hybrid energy storage systems (HESSs in small-scale standalone microgrids for remote area power supply (RAPS has received extensive attention. This application mode has its own characteristics which must be considered but have not been considered in the existing research. To reflect the common satisfaction of load demands and maximize the utilization of renewable energy in a standalone microgrid, a new index named effective rate of energy storage system (ESS is proposed. To reflect the true work state of supercapacitor ESS (SC-ESS, the second-level data of field measurements is used in calculation and analysis. To further enhance the operational performance of the HESS, a coordinated control strategy based on state cooperation is adopted. To get a more reasonable and more credible HESS optimization model, the comparison of existing models and proposed model with different considerations on cost and life is provided. In addition, a comparative analysis of technical and economic characteristics improvements is presented for different ESS application schemes in practical projects.

  13. A Rule-Based Energy Management Strategy for a Plug-in Hybrid School Bus Based on a Controller Area Network Bus

    Directory of Open Access Journals (Sweden)

    Jiankun Peng

    2015-06-01

    Full Text Available This paper presents a rule-based energy management strategy for a plug-in hybrid school bus (PHSB. In order to verify the effectiveness and rationality of the proposed energy management strategy, the powertrain and control models were built with MATLAB/Simulink. The PHSB powertrain model includes an engine model, ISG (integrated started and generator model, drive motor model, power battery packs model, driver model, and vehicle longitudinal dynamics model. To evaluate the controller area network (CAN bus performance features such as the bus load, signal hysteresis, and to verify the reliability and real-time performance of the CAN bus multi-node control method, a co-simulation platform was built with CANoe and MATLAB/Simulink. The co-simulation results show that the control strategy can meet the requirements of the PHSB’s dynamic performance. Meanwhile, the charge-depleting mode (CD and charge-sustaining mode (CS can switch between each other and maintain a state-of-charge (SoC of around 30%, indicating that the energy management strategy effectively extends the working period of the CD mode and improves the fuel economy further. The energy consumption per 100 km includes 13.7 L diesel and 10.5 kW·h electricity with an initial SoC of 75%. The CANoe simulation results show that the bus communication performs well without error frames.

  14. HgCdTe Infrared Avalanche Photodiode Single Photon Detector Arrays for the LIST and Other Decadal Missions Project

    Data.gov (United States)

    National Aeronautics and Space Administration — Develop a HgCdTe avalanche photodiode (APD)  SWIR/IR linear mode photon counting (LMPC) array detector system in support of the LIST lidar. Provide a new type...

  15. High-Speed Radiation Tolerant Avalanche Photodiodes Based on InGaN for Space Altimeter Systems Project

    Data.gov (United States)

    National Aeronautics and Space Administration — High-performance, radiation-tolerant detectors are required for the time-of-flight laser based rangefinders. Avalanche photodiodes (APDs) are conventionally chosen...

  16. Photoelectric characteristics of an inverse U-shape buried doping design for crosstalk suppression in pinned photodiodes

    Institute of Scientific and Technical Information of China (English)

    Cao Chen; Zhang Bing; Li Xin; Wu Longsheng; Wang Junfeng

    2014-01-01

    A design of an inverse U-shape buried doping in a pinned photodiode (PPD) of CMOS image sensors is proposed for electrical crosstalk suppression between adjacent pixels.The architecture achieves no extra fill factor consumption,and proper built-in electric fields can be established according to the doping gradient created by the injections of the extremely low P-type doping buried regions in the epitaxial layer,causing the excess electrons to easily drift back to the photosensitive area rarely with a diffusion probability; the overall junction capacitance and photosensitive area extensions for a full well capacity (FWC) and internal quantum efficiency (IQE) improving are achieved by the injection of a buried N-type doping.By considering the image lag issue,the process parameters of all the injections have been precisely optimized.Optical simulation results based on the finite difference time domain method show that compared to the conventional PPD,the electrical crosstalk rate of the proposed architecture can be decreased by 60%-80% at an incident wavelength beyond 450 nm,IQE can be clearly improved at an incident wavelength between 400 and 600 nm,and the FWC can be enhanced by 107.5%.Furthermore,the image lag performance is sustained to a perfect low level.The present study provides important guidance on the design of ultra high resolution image sensors.

  17. Photoelectric characteristics of an inverse U-shape buried doping design for crosstalk suppression in pinned photodiodes

    International Nuclear Information System (INIS)

    A design of an inverse U-shape buried doping in a pinned photodiode (PPD) of CMOS image sensors is proposed for electrical crosstalk suppression between adjacent pixels. The architecture achieves no extra fill factor consumption, and proper built-in electric fields can be established according to the doping gradient created by the injections of the extremely low P-type doping buried regions in the epitaxial layer, causing the excess electrons to easily drift back to the photosensitive area rarely with a diffusion probability; the overall junction capacitance and photosensitive area extensions for a full well capacity (FWC) and internal quantum efficiency (IQE) improving are achieved by the injection of a buried N-type doping. By considering the image lag issue, the process parameters of all the injections have been precisely optimized. Optical simulation results based on the finite difference time domain method show that compared to the conventional PPD, the electrical crosstalk rate of the proposed architecture can be decreased by 60%–80% at an incident wavelength beyond 450 nm, IQE can be clearly improved at an incident wavelength between 400 and 600 nm, and the FWC can be enhanced by 107.5%. Furthermore, the image lag performance is sustained to a perfect low level. The present study provides important guidance on the design of ultra high resolution image sensors. (semiconductor devices)

  18. Lithography-Free, Low-Cost Method for Improving Photodiode Performance by Etching Silicon Nanocones as Antireflection Layer

    CERN Document Server

    Jiang, Jing; Lin, Jiahao; Liu, Gang Logan

    2016-01-01

    A three-step process has been demonstrated to improve the performance of photodiode by creating nanocone forest on the surface of photodiode as an antireflection layer. This high-throughput, low-cost process has been shown to decrease the reflectivity by 66.1%, enhance the quantum efficiency by 27%, and increase the responsivity by 25.7%. This low-cost manufacture process can be applied to increase the responsivity of silicon based photonic devices.

  19. The photodiode array camera: A new method for acquiring airtrack data

    Science.gov (United States)

    Butler, Crispin O.; Bergeron, David

    1994-05-01

    A linear photodiode array mounted in a camera body provides an excellent means of acquiring position-time information for gliders moving on an airtrack. Based on the output of a 512 photodiode array, a computer calculates positions of two gliders simultaneously with a resolution of 10 μm and accuracy of 400 μm along the full length of a 2 m airtrack. Motions lasting up to 5 min can be acquired at rates of 50 positions per second. The resulting data can be interpreted with the aid of spreadsheets and graphing programs. Setup, calibration, and operation of the apparatus are simple enough that students can design and perform their own mechanics experiments.

  20. Commercially available Geiger mode single-photon avalanche photodiode with a very low afterpulsing probability

    CERN Document Server

    Stipčević, Mario

    2015-01-01

    Afterpulsing is one of the main technological flaws present in photon counting detectors based on solid-state semiconductor avalanche photodiodes operated in Geiger mode. Level of afterpulsing depends mainly on type of the semiconductor, doping concentrations and temperature and presents an additional source of noise, along with dark counts. Unlike dark counts which appear randomly in time, aterpulses and are time-correlated with the previous detections. For measurements that rely on timing information afterpulsing can create fake signals and diminish the sensitivity. In this work we test a novel broadband sensitive APD that was designed for sub-Geiger avalanche gain operation. We find that this APD, which has a reach-through geometry typical of single-photon detection photodiodes, can also operate in Geiger mode with usable detection sensitivity and acceptable dark counts level while exhibiting uniquely low afterpulsing. The afterpulsing of tested samples was systematically less than 0.05 percent at 10V exce...

  1. Ageing tests of radiation damaged lasers and photodiodes for the CMS experiment at CERN

    CERN Document Server

    Gill, K; Batten, J; Cervelli, G; Grabit, R; Jensen, F; Troska, Jan K; Vasey, F

    2000-01-01

    The effects of thermally accelerated ageing in irradiated and unirradiated 1310 nm InGaAsP edge-emitting lasers and InGaAs p-i-n photodiodes are presented. 40 lasers (20 irradiated) and 30 photodiodes (19 irradiated) were aged for 4000 hours at 80 degrees C. Periodic measurements were made of laser threshold and efficiency, and p-i-n leakage current and photocurrent. There were no sudden failures and there was very little wearout related degradation in either unirradiated or irradiated sample groups. The results suggest that the tested devices have a sufficiently long lifetime to operate for at least 10 years inside the Compact Muon Solenoid experiment despite being exposed to a harsh radiation environment. (19 refs).

  2. A low cost X-ray imaging device based on BPW-34 Si-PIN photodiode

    Science.gov (United States)

    Emirhan, E.; Bayrak, A.; Yücel, E. Barlas; Yücel, M.; Ozben, C. S.

    2016-05-01

    A low cost X-ray imaging device based on BPW-34 silicon PIN photodiode was designed and produced. X-rays were produced from a CEI OX/70-P dental tube using a custom made ±30 kV power supply. A charge sensitive preamplifier and a shaping amplifier were built for the amplification of small signals produced by photons in the depletion layer of Si-PIN photodiode. A two dimensional position control unit was used for moving the detector in small steps to measure the intensity of X-rays absorbed in the object to be imaged. An Aessent AES220B FPGA module was used for transferring the image data to a computer via USB. Images of various samples were obtained with acceptable image quality despite of the low cost of the device.

  3. Surface passivation of GaInAsSb photodiodes with thioacetamide

    Energy Technology Data Exchange (ETDEWEB)

    Salesse, A.; Joullie, A.; Chevrier, F.; Cuminal, Y.; Ferblantier, G.; Christol, P. [Institut d' Electronique du Sud (IES-CEM2), UMR CNRS 5507, Case 067, Universite Montpellier 2, 34 095 Montpellier Cedex 05 (France); Calas, P. [UMR CNRS 5073 CHIMIE, Case 017, Universite Montpellier 2, 34 095 Montpellier Cedex 05 (France); Nieto, J. [Instituto de Investigacion en Comunicacion Optica (IICO), Universidad Autonoma de San Luis Potosi, Alvaro Obregon 64, San Luis Potosi (Mexico)

    2007-04-15

    AlGaAsSb/GaInAsSb heterojunction mesa photodiodes having 2.2 {mu}m cutoff wavelength, grown by MBE on (p) GaSb substrates, have been passivated using thioacetamide CH{sub 4}CSNH{sub 2} and ammonium sulphide (NH{sub 4}){sub 2}S. Superior characteristics were obtained from devices processed with thioacetamide in acid medium (pH=2.4). At room temperature the surface leakage currents were suppressed, and the photodiodes showed R{sub 0}A product as high as 16 {omega}cm{sup 2} and detectivity D{sup *}(2 {mu}m,0 V){proportional_to}10{sup 10} cmHz{sup 1/2}W{sup -1}. A model explaining sulfuration mechanisms with thioacetamide and (NH{sub 4}){sub 2}S is proposed. (copyright 2007 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  4. A Scintillating Fiber Dosimeter for Radiology and Brachytherapy with photodiode readout

    CERN Document Server

    Rêgo, Florbela; Abreu, Maria da Conceição

    2011-01-01

    Purpose: For more than a decade that plastic optical fiber based dosimeters have been developed for medical applications. The feasibility of dosimeters using optical fibers that are almost Cherenkov light free has been demonstrated in some prototypes, particularly suitable for photon high-energy beams. In the energy range up to a few hundred keV, where the production of Cherenkov light by secondary electrons is negligible or small, the largest source of background are the fluorescence mechanisms. Methods: In recent years our group has developed an optical fiber dosimeter with photodiode readout named DosFib, which has small energy dependence in the range below 100 keV relevant for radiology. Photodiodes are robust photodetectors, presenting good stability over time and enough sensitivity to allow the use of an electrometer as a measuring device without extra electronics. Results: In-vitro tests using a High Dose Rate 192Ir source have demonstrated its suitability for brachytherapy applications using this impo...

  5. Frequency dependence of junction capacitance of BPW34 and BPW41 p-i-n photodiodes

    Indian Academy of Sciences (India)

    Habibe Bayhan; Şadan Özden

    2007-04-01

    This article investigates the frequency dependence of small-signal capacitance of silicon BPW34 and BPW41 (Vishay) p-i-n photodiodes. We show that the capacitance-frequency characteristics of these photodiodes are well-described by the Schibli and Milnes model. The activation energy and the concentration of the dominant trap levels detected in BPW34 and BPW41 are 280{330 meV and 1.1 × 1012 - 1.2 × 1012 cm-3, respectively. According to the high-frequency - measurements, the impurity concentrations are determined to be about 5.3 × 1012 and 1.9 × 1013 cm-3 in BPW41 and BPW34, respectively using the method of / (-2) vs. .

  6. 冷凉区覆膜谷子不同杂交种产量构成及水分利用效率%The Yield Components and WUE of Mulched Millet Hybrids in Cold Areas

    Institute of Scientific and Technical Information of China (English)

    王伟; 李佳; 郭剑; 樊修武

    2012-01-01

    The comparitive test of different genotype hybrids millet under the condition of polythene mulch in cold area with annually accumulated temperature of 2 600 ℃ in Shanxi was done and the results showed that there were significant differences of total yield among millet varieties. The rate of fertile tillers of hybrid millet Zhang 3, hybrid millet Zhang 5 and hybrid millet Zhang 10 were the highest, as well as the better total yield. The average tiller of a basic seeding of hybrid millet Zhang 5 was 3.82, the seed ratio of hybrid millet Zhang 3 was as high as 81%, and there was certain relationship between the rate of fertile tillers and harvest index. The WUE of hybrid millet Zhang 5 and hybrid millet Zhang 10 were 11.72, 11.77 kg/(mm·hm2) respectively. It proved that hybrids millet cultivation could never bring about the soil moisture shortage.%在山西冷凉区(年活动积温2 600℃)地膜覆盖条件下,对谷子不同基因型杂交种进行了对比试验.结果表明:不同品种之间的产量结果差异显著,张杂谷3号、张杂谷5号与张杂谷10号的分蘖成穗较高,产量处于较高水平;张杂谷5号的1个基本苗成穗3.82个,张杂谷3号出籽率达81%;分蘖成穗与收获指数具有一定的相关性;张杂谷5号、张杂谷10号水分利用效率(WUE)分别达11.72,11.77 kg/(mm ·hm2),说明种植谷子杂交种不会引起土壤水分的亏缺.

  7. Direct X-Ray Response Of Charge-Coupled Devices And Photodiode Linear Arrays

    Science.gov (United States)

    Launspach, J.; Bourgade, J. L.; Cavailler, C.; de Mascureau, J.; Mens, A.; Sauneuf, R.

    1986-08-01

    For x-ray calibration of detectors used on laser created plasma experiments we have developed and characterized two kinds of sources : classical continuous x-ray sources operating at 1.8 keV and 5.4 keV and a pulsed source obtained by modifying a plasma Focus device. Calibration data for x-ray Charge - Coupled Devices (CCD) and photodiode linear array cameras are presented.

  8. Avoiding sensor blindness in Geiger mode avalanche photodiode arrays fabricated in a conventional CMOS process

    OpenAIRE

    Vilella Figueras, Eva; Diéguez Barrientos, Àngel

    2011-01-01

    The need to move forward in the knowledge of the subatomic world has stimulated the development of new particle colliders. However, the objectives of the next generation of colliders sets unprecedented challenges to the detector performance. The purpose of this contribution is to present a bidimensional array based on avalanche photodiodes operated in the Geiger mode to track high energy particles in future linear colliders. The bidimensional array can function in a gated mode to reduce the p...

  9. Silicon Geiger-mode avalanche photodiode arrays for photon-starved imaging

    Science.gov (United States)

    Aull, Brian F.

    2015-05-01

    Geiger-mode avalanche photodiodes (GMAPDs) are capable of detecting single photons. They can be operated to directly trigger all-digital circuits, so that detection events are digitally counted or time stamped in each pixel. An imager based on an array of GMAPDs therefore has zero readout noise, enabling quantum-limited sensitivity for photon-starved imaging applications. In this review, we discuss devices developed for 3D imaging, wavefront sensing, and passive imaging.

  10. Vacuum photodiode detectors for soft x-ray ITER plasma tomography

    Science.gov (United States)

    Gott, Yu. V.; Stepanenko, M. M.

    2005-07-01

    A special type of vacuum photodiode detector (VPD) for x-ray tomography of (ITER) plasma is described. Laboratory experiments demonstrate that VPD has high sensitivity to thermal x-rays and low sensitivity to hard gamma rays and neutrons. It was shown that in ITER environment the signal due to thermal x-rays will surpass the background signal by more than a factor of 100.

  11. Spectral and angular dependence of photodiode response to soft X-rays

    International Nuclear Information System (INIS)

    Planar arrays of photodiode detectors for soft X-ray tomography on magnetic fusion devices have become very popular. They are economic and allow very compact camera designs. Unlike X-ray cameras based on single element detectors placed on a semicircle around the pinhole, the angle of incidence is different for each diode of such an array. Since uniformity of response is crucial for tomography we have investigated the effect and ways to compensate for it. (author) 3 figs., 9 refs

  12. Vacuum photodiode detectors for soft x-ray ITER plasma tomography

    International Nuclear Information System (INIS)

    A special type of vacuum photodiode detector (VPD) for x-ray tomography of (ITER) plasma is described. Laboratory experiments demonstrate that VPD has high sensitivity to thermal x-rays and low sensitivity to hard gamma rays and neutrons. It was shown that in ITER environment the signal due to thermal x-rays will surpass the background signal by more than a factor of 100

  13. X-ray multi-energy radiography with scintillator-photodiode detectors

    OpenAIRE

    Naydenov, S. V.; Ryzhikov, V. D.; B.V. Grinyov; Lisetskaya, E. K.; Opolonin, A. D.; Kozin, D. N.

    2002-01-01

    For reconstruction of the spatial structure of many-component objects, it is proposed to use multi-radiography with detection of X-ray by combined detector arrays using detectors of ``scintillator-photodiode'' type. A theoretical model has been developed of multi-energy radiography for thickness measurements of multi-layered systems and systems with defects. Experimental studies of the sensitivity, output signal of various inspection systems based on scintillators $ZnSe(Te)$ and $CsI(Tl)$, an...

  14. Novel approach to improve reliable color recognition in a-Si:H photodiodes

    Science.gov (United States)

    Watty, Krystian; Bablich, Andreas; Seibel, Konstantin; Merfort, Christian; Böhm, Markus

    2012-06-01

    Optical detection is an often used technique for recognition of potentially dangerous materials. Hydrogenated amorphous silicon (a-Si:H) technology provides an inexpensive alternative material compared to crystalline silicon for being used in photonic devices operating in the visible spectrum. Further materials' key benefits are the high light absorption, the voltage-tunable spectral sensitivity and the high space efficiency. Present research efforts concentrate on the determination of the color information in a-Si:H photodiodes. This work presents an approach to improve color recognition of a-Si:H photodiodes by modifying the layer sequence. The maximum of the spectral response (SR) of a single i-layer a-Si:H photodiode can be shifted by varying its bias voltage. In this case, the shift is not more than some nanometers. Precise color recognition requires different SR maxima (e.g. RGB-model). One possibility to accomplish a separation of the SR is to engineer the bandgap; another idea, which is presented here, is based on a layer sequence modification. Normally, the SR at higher reverse bias voltages, with the maximum at longer wavelengths, encloses that at lower voltages. Splitting the SR leads to an improvement of color recognition and is achieved by depositing an additional interior anode. The SR maximum shift amounts to 100nm, from 570nm by contacting the interior anode, to 670nm at the top anode. Furthermore, the curves are clearly split. The presented approach should lead to a tunable multi-spectral photodiode for high quality color recognition. Such a diode can be used in photonic devices, e.g. for safety and security applications.

  15. PIN Photodiodes for Radiation Monitoring and Protection in the BaBar Silicon Vertex Tracker

    OpenAIRE

    Babar Collaboration; T.I. Meyer

    2000-01-01

    We discuss the design, implementation and performance of the radiation monitoring and protection system used by the Silicon Vertex Tracker (SVT) in the BaBar detector. Using 12 reverse-biased PIN photodiodes mounted around the beampipe near the IP, we are able to provide instantaneous radiation dose rates, absorbed dose integrals, and active protection that aborts the circulating beams in the PEP-II storage ring when radiation levels exceed user-defined thresholds. The system has reliably pro...

  16. Estimation and Modeling of the Full Well Capacity in Pinned Photodiode CMOS Image Sensors

    OpenAIRE

    Pelamatti, Alice; Goiffon, Vincent; Estribeau, Magali; Cervantes, Paola; Magnan, Pierre

    2013-01-01

    This letter presents a simple analytical model for the evaluation of the full well capacity (FWC) of pinned photodiode (PPD) CMOS image sensors depending on the operating conditions and on the pixel parameters. While in the literature and technical documentations FWC values are generally presented as fixed values independent of the operating conditions, this letter demonstrates that the PPD charge handling capability is strongly dependent on the photon flux.

  17. Radiation tests of photodiodes for the ATLAS SCT and PIXEL opto- links

    CERN Document Server

    Hou, L S; Lee, S C; Su, D S; Teng, P K

    2005-01-01

    In previous research, epitaxial Si PIN photodiodes produced by Centronic which will be used in the ATLAS semiconductor tracker have been irradiated with 1 MeV neutrons and 24 GeV protons with fluences up to an equivalent of $10^{15}$ 1 MeV neutrons (1,2) . In this work 30 MeV proton beams were used to irradiate Centronic and Truelight epitaxial Si PIN diodes with accumulated fluences of up to 2.1 multiplied by $10^{14}$-30 MeV p $cm^{-2}$, an equivalent of 5.7 multiplied by $10^{14} cm^{-2}$ 1 MeV neutrons, to reach the pixel radiation environment. The responsivity was measured with different levels of fluence in order to study the responsivity behaviour of two different types of photodiodes. The responsivity behaviour of these two photodiodes was similar: a linear degradation at large fluences, greater than $10^{14}$ 30 MeV p $cm^{-2}$, but with different slopes. The response of the Centronic PIN diode showed a degradation to 73% after a proton fluence of $10^{13}$ p $cm^{-2}$ of 30 MeV and a linear degradat...

  18. Slow-light effect in a silicon photonic crystal waveguide as a sub-bandgap photodiode.

    Science.gov (United States)

    Terada, Yosuke; Miyasaka, Kenji; Ito, Hiroyuki; Baba, Toshihiko

    2016-01-15

    We demonstrate a Si sub-bandgap photodiode in a photonic crystal slow-light waveguide that operates at telecom wavelengths and can be fabricated using a Ge-free, standard Si-photonics CMOS process. In photodiodes based on absorption via mid-bandgap states, the slow-light enhancement enables performance that is well balanced among high responsivity, low dark current, high speed, wide working spectrum, and CMOS-process compatibility, all of which are otherwise difficult to achieve simultaneously. Owing to the slow-light effect and supplemental gain at a high reverse bias, the photodiode shows a responsivity of 0.15  A/W with a low dark current of 40 nA, which is attributed to no particular processes such as ion implantation and excess exposure of the Si surface. The maximum responsivity was 0.36  A/W. The modest gain allows for sufficient frequency bandwidth to observe an eye opening at up to 30  Gb/s. PMID:26766696

  19. Flicker noise in high-speed p-i-n photodiodes

    CERN Document Server

    Rubiola, E; Yu, N; Maleki, L; Rubiola, Enrico; Salik, Ertan; Yu, Nan; Maleki, Lute

    2005-01-01

    The microwave signal at the output of a photodiode that detects a modulated optical beam contains the phase noise phi(t) and the amplitude noise alpha(t) of the detector. Beside the white noise, which is well understood, the spectral densities S_phi(f) and S_alpha(f) show flicker noise, proportional to 1/f. We report on the measurement of the phase and amplitude noise of high-speed p-i-n photodiodes. The main result is that the flicker coefficient of the samples is approximately 1E-12 rad^2/Hz (-120dB) for phase noise, and approximately 1E-12 Hz^-1 (-120dB) for amplitude noise. These values could be observed only after solving a number of experimental problems and in a protected environment. By contrast, in ordinary conditions insufficient EMI isolation, and also insufficient mechanical isolation, are responsible for additional noise to be taken in. This suggests that if package and EMC are revisited, applications can take the full benefit from the surprisingly low noise of the p-i-n photodiodes.

  20. Radiation effects in pinned photodiode CMOS image sensors: pixel performance degradation due to total ionizing dose

    International Nuclear Information System (INIS)

    Several Pinned Photodiode (PPD) CMOS Image Sensors (CIS) are designed, manufactured, characterized and exposed biased to ionizing radiation up to 10 kGy(SiO2). In addition to the usually reported dark current increase and quantum efficiency drop at short wavelengths, several original radiation effects are shown: an increase of the pinning voltage, a decrease of the buried photodiode full well capacity, a large change in charge transfer efficiency, the creation of a large number of Total Ionizing Dose (TID) induced Dark Current Random Telegraph Signal (DC-RTS) centers active in the photodiode (even when the Transfer Gate (TG) is accumulated) and the complete depletion of the Pre-Metal Dielectric (PMD) interface at the highest TID leading to a large dark current and the loss of control of the TG on the dark current. The proposed mechanisms at the origin of these degradations are discussed. It is also demonstrated that biasing (i.e., operating) the PPD CIS during irradiation does not enhance the degradations compared to sensors grounded during irradiation. (authors)

  1. Intensity influence on Gaussian beam laser based measurements using quadrant photodiodes.

    Science.gov (United States)

    Panduputra, Yohannes; Ng, Tuck Wah; Neild, Adrian; Robinson, Michael

    2010-07-01

    In many measurement applications using quadrant photodiodes, the signal is normally obtained from integrated devices incorporating current-to-voltage amplifiers that provide the necessary difference outputs with amplification. Quadrant photodiodes permit two-axis laser beam size and beam deflection determination. We show here that photodiode saturation, nonlinear characteristics of amplifying circuits, and voltage clipping features meant to prevent the output of a circuit from exceeding a predetermined voltage level to distort applied waveforms, play a significant role in measurement at low and high intensity levels, respectively. These two factors conspire to underestimate laser beam size measurement. A best-fit computation of the size versus power trend was found to permit satisfactory estimation of the beam size as well as the optimal laser power to be used. The intensity of light was also found to strongly affect the sensitivity of beam deflection measurements, in which a correction based on best-fit computation was deficient. In this case, calibration steps would be needed when light levels changed. PMID:20648132

  2. HgCdTe e-avalanche photodiode detector arrays

    OpenAIRE

    Anand Singh; Shukla, A. K.; Ravinder Pal

    2015-01-01

    Initial results on the MWIR e-APD detector arrays with 30 μm pitch fabricated on LPE grown compositionally graded p-HgCdTe epilayers are presented. High dynamic resistance times active area (R0A) product 2 × 106 Ω-cm2, low dark current density 4 nA/cm2 and high gain 5500 at -8 V were achieved in the n+-υ-p+ HgCdTe e-APD at 80 K. LPE based HgCdTe e-APD development makes this technology amenable for adoption in the foundries established for the conventional HgCdTe photovoltaic detector arrays w...

  3. Progress in MBE grown type-II superlattice photodiodes

    Science.gov (United States)

    Hill, Cory J.; Li, Jian V.; Mumolo, Jason M.; Gunapala, Sarath D.

    2006-01-01

    We report on the status of GaSb/InAs type-II superlattice diodes grown and fabricated at the Jet Propulsion Laboratory designed for infrared absorption in the 8-12(mu)m range. Recent devices have produced detectivities as high as 8x10 to the tenth power Jones with a differential resistance-area product greater than 6 Ohmcm(sup 2) at 80K with a long wavelength cutoff of approximately 12(mu)m. The measured quantum efficiency of these front-side illuminated devices is close to 30% in the 10-11(mu)m range without antireflection coatings.

  4. A novel surface-enhanced Raman spectroscopy substrate based on a large area of MoS2 and Ag nanoparticles hybrid system

    Science.gov (United States)

    Chen, P. X.; Qiu, H. W.; Xu, S. C.; Liu, X. Y.; Li, Z.; Hu, L. T.; Li, C. H.; Guo, J.; Jiang, S. Z.; Huo, Y. Y.

    2016-07-01

    Few layers MoS2 were directly synthesized on Ag nanoparticles (AgNPs) by thermal decomposion method to fabricate a MoS2/AgNPs hybrid system for surface-enhanced Raman scattering (SERS). The MoS2/AgNPs hybrid system shows high performance in terms of sensitivity, signal-to-noise ratio, reproducibility and stability. The minimum detected concentration from MoS2/AgNPs hybrid system for R6 G can reach 10-9 M, which is one order of magnitude lower than that from AgNPs system. The hybrid system shows the reasonable linear response between the Raman intensity and concentration that R2 is reached to 0.988. The maximum deviations of SERS intensities from 20 positions of the SERS substrate are less than 13%. Besides, the hybrid system has a good stability, the Raman intensity only drop by 20% in a month. This work can provide a basis for the fabrication of novel SERS substrates.

  5. Measurements of patient chest dose for multi-slice X-ray CT examinations using PIN photodiode dosimeters

    International Nuclear Information System (INIS)

    Organ and tissue doses delivered during chest CT examinations were measured as a function of scanning parameters including tube current, slice thickness, and pitch of the multi-slice CT scanner. Measurements were carried out by using a chest dosimetry phantom that incorporated lung and vertebra models, and by putting PIN photodiode dosimeters into the phantom at sites of the esophagus or stomach, lung, bone marrow, and skin. Absorbed doses at each site in the phantom measured for a constant scan area indicated that these values could be precisely calculated from the value obtained at any scanning parameter by using inverse proportionality of dose to pitch and the data of x-ray intensity as a function of tube current and slice thickness measured for the CT scanner used. Relative dose at each site was found to be constant regardless of the scanning parameters, indicating that the dose value at each site could be calculated from that measured at only one point in the phantom. Effective doses and effective dose equivalents were estimated from organ or tissue doses for chest CT examinations, and were found to be 1.5 to 3 times larger than the average values of effective dose equivalent appearing in the literature. (author)

  6. Recent progress of avalanche photodiodes in high-resolution X-rays and Gamma-rays detection

    CERN Document Server

    Kataoka, J; Kuramoto, Y; Ikagawa, T; Yatsu, Y; Kotoku, J; Arimoto, M; Kawai, N; Ishikawa, Y; Kawabata, N

    2005-01-01

    We have studied the performance of large area avalanche photodiodes (APDs) recently developed by Hamamatsu Photonics K.K, in high-resolution X-rays and Gamma-rays detections. We show that reach-through APD can be an excellent soft X-ray detector operating at room temperature or moderately cooled environment. We obtain the best energy resolution ever achieved with APDs, 6.4 % for 5.9 keV X-rays, and obtain the energy threshold as low as 0.5 keV measured at -20deg. Thanks to its fast timing response, signal carriers in the APD device are collected within a short time interval of 1.9 nsec (FWHM). This type of APDs can therefore be used as a low-energy, high-counting particle monitor onboard the forthcoming Pico-satellite Cute1.7. As a scintillation photon detector, reverse-type APDs have a good advantage of reducing the dark noise significantly. The best FWHM energy resolutions of 9.4+-0.3 % and 4.9+-0.2 % were obtained for 59.5 keV and 662 keV Gamma-rays, respectively, as measured with a CsI(Tl) crystal. Combin...

  7. Comparative study of various pixel photodiodes for digital radiography: junction structure, corner shape and noble window opening

    Energy Technology Data Exchange (ETDEWEB)

    Kang, Dong-Uk; Cho, Min-Sik; Lee, Dae-Hee; Yoo, Hyun-Jun; Kim, Myung-Soo; Bae, Jun-Hyung; Kim, Hyoung-Taek; Kim, Jong-Yul; Kim, Hyun-Duk; Cho, Gyu-Seong [Korea Advanced Institute of Science and Technology, Daejeon (Korea, Republic of)

    2012-05-15

    Recently, large-size 3-transistors (3-Tr) active pixel complementary metal-oxide silicon (CMOS) image sensors have been being used for medium-size digital X-ray radiography, such as dental computed tomography (CT), mammography and nondestructive testing (NDT) for consumer products. We designed and fabricated 50 μm x 50 μm 3-Tr test pixels having a pixel photodiode with various structures and shapes by using the TSMC 0.25-m standard CMOS process to compare their optical characteristics. The pixel photodiode output was continuously sampled while a test pixel was continuously illuminated by using 550-nm light at a constant intensity. The measurement was repeated 300 times for each test pixel to obtain reliable results on the mean and the variance of the pixel output at each sampling time. The sampling rate was 50 kHz, and the reset period was 200 msec. To estimate the conversion gain, we used the mean-variance method. From the measured results, the n-well/p-substrate photodiode, among 3 photodiode structures available in a standard CMOS process, showed the best performance at a low illumination equivalent to the typical X-ray signal range. The quantum efficiencies of the n+/p-well, n-well/p-substrate, and n+/p-substrate photodiodes were 18.5%, 62.1%, and 51.5%, respectively. From a comparison of pixels with rounded and rectangular corners, we found that a rounded corner structure could reduce the dark current in large-size pixels. A pixel with four rounded corners showed a reduced dark current of about 200 fA compared to a pixel with four rectangular corners in our pixel sample size. Photodiodes with round p-implant openings showed about 5% higher dark current, but about 34% higher sensitivities, than the conventional photodiodes.

  8. Comparative study of various pixel photodiodes for digital radiography: Junction structure, corner shape and noble window opening

    Science.gov (United States)

    Kang, Dong-Uk; Cho, Minsik; Lee, Dae Hee; Yoo, Hyunjun; Kim, Myung Soo; Bae, Jun Hyung; Kim, Hyoungtaek; Kim, Jongyul; Kim, Hyunduk; Cho, Gyuseong

    2012-05-01

    Recently, large-size 3-transistors (3-Tr) active pixel complementary metal-oxide silicon (CMOS) image sensors have been being used for medium-size digital X-ray radiography, such as dental computed tomography (CT), mammography and nondestructive testing (NDT) for consumer products. We designed and fabricated 50 µm × 50 µm 3-Tr test pixels having a pixel photodiode with various structures and shapes by using the TSMC 0.25-m standard CMOS process to compare their optical characteristics. The pixel photodiode output was continuously sampled while a test pixel was continuously illuminated by using 550-nm light at a constant intensity. The measurement was repeated 300 times for each test pixel to obtain reliable results on the mean and the variance of the pixel output at each sampling time. The sampling rate was 50 kHz, and the reset period was 200 msec. To estimate the conversion gain, we used the mean-variance method. From the measured results, the n-well/p-substrate photodiode, among 3 photodiode structures available in a standard CMOS process, showed the best performance at a low illumination equivalent to the typical X-ray signal range. The quantum efficiencies of the n+/p-well, n-well/p-substrate, and n+/p-substrate photodiodes were 18.5%, 62.1%, and 51.5%, respectively. From a comparison of pixels with rounded and rectangular corners, we found that a rounded corner structure could reduce the dark current in large-size pixels. A pixel with four rounded corners showed a reduced dark current of about 200fA compared to a pixel with four rectangular corners in our pixel sample size. Photodiodes with round p-implant openings showed about 5% higher dark current, but about 34% higher sensitivities, than the conventional photodiodes.

  9. Structural aspects and porosity features of nano-size high surface area alumina-silica mixed oxide catalyst generated through hybrid sol-gel route

    Energy Technology Data Exchange (ETDEWEB)

    Padmaja, P. [Ceramic Technology Division, Regional Research Laboratory (CSIR), Trivandrum 695019, Kerala (India)]. E-mail: padmavasudev@yahoo.com; Warrier, K.G.K. [Ceramic Technology Division, Regional Research Laboratory (CSIR), Trivandrum 695019, Kerala (India)]. E-mail: kgk_warrier@yahoo.com; Padmanabhan, M. [School of Chemical Sciences, Mahatma Gandhi University, Kottayam 686560, Kerala (India); Wunderlich, W. [Graduate School of Engineering, Nagoya Institute of Technology, 466-8555 Nagoya (Japan); Berry, F.J. [Department of Chemistry, Open University, Walton Hall, Milton Keynes MK7 6AA (United Kingdom); Mortimer, M. [Department of Chemistry, Open University, Walton Hall, Milton Keynes MK7 6AA (United Kingdom); Creamer, N.J. [Department of Chemistry, Open University, Walton Hall, Milton Keynes MK7 6AA (United Kingdom)

    2006-01-10

    Alumina-silica mixed oxide nano-catalyst materials with compositions 83.6 wt.% Al{sub 2}O{sub 3}-16.4 wt.% SiO{sub 2} (3Al{sub 2}O{sub 3}.1SiO{sub 2}), 71.82 wt.% Al{sub 2}O{sub 3}-28.18 wt.% SiO{sub 2} (3Al{sub 2}O{sub 3}.2SiO{sub 2}), 62.84 wt.% Al{sub 2}O{sub 3}-37.16 wt.% SiO{sub 2} (3Al{sub 2}O{sub 3}.3SiO{sub 2}) and 56.03 wt.% Al{sub 2}O{sub 3}-43.97 wt.% SiO{sub 2} (3Al{sub 2}O{sub 3}.4SiO{sub 2}) have been prepared by a hybrid sol-gel technique using boehmite as the precursor for alumina and tetraethoxysilane as that for silica. The bonding characteristics and coordination features around Al and Si in the mixed oxide catalysts have been studied using FTIR and {sup 27}Al MAS NMR after calcination at 400 deg. C which is the temperature region where cross-condensation is seen to take place. A high BET specific surface area of 287 m{sup 2} g{sup -1} is obtained for 3Al{sub 2}O{sub 3}.1SiO{sub 2} mixed oxide composition. The porosity features are further established by BET adsorption isotherms and pore size distribution analysis. The temperature-programmed desorption studies showed more surface active sites for the silica-rich composition, suggesting enhanced catalytic potential. The TEM features of the mixed oxides showed a homogeneous distribution of alumina and silica phases with particle sizes in the nano-range. The low silica-containing mixed oxide showed a needle-like morphology with a high aspect ratio of 1:50 and {approx}10 nm particle size while the silica-rich composition had particle size in a wide range ({approx}20-75 nm)

  10. Ultra-fast time-correlated single photon counting avalanche photodiodes for time-domain non-contact fluorescence diffuse optical tomography

    Science.gov (United States)

    Robichaud, Vincent; Lapointe, Éric; Bérubé-Lauzière, Yves

    2007-06-01

    Recent advances in the design and fabrication of avalanche photodiodes (APDs) and quenching circuits for timecorrelated single photon counting (TCSPC) have made available detectors with timing resolutions comparable to microchannel plate photomultiplier tubes (MCP-PMTs). The latter, were until recently the best TCSPC detectors in terms of temporal resolution (standard electronics fabrication processes in a near future. This will contribute to further decrease their price and ease their integration in complex multi-channel detection systems, as required in diuse optical imaging (DOI) and tomography (DOT). We present, to our knowledge for the first time, results which demonstrate that, despite their small sensitive area, TCSPC APDs can be used in time-domain (TD) DOT and more generally in TD DOI. With appropriate optical design of the detection channel, our experiments show that it is possible to obtain comparable measurements with APDs as with PMTs.

  11. Extremely Efficient Multiple Electron-hole Pair Generation in Carbon Nanotube Photodiodes

    Science.gov (United States)

    Gabor, Nathaniel

    2010-03-01

    The efficient generation of multiple electron-hole (e-h) pairs from a single photon could improve the efficiency of photovoltaic solar cells beyond standard thermodynamic limits [1] and has been the focus of much recent work in semiconductor nanomaterials [2,3]. In single walled carbon nanotubes (SWNTs), the small Fermi velocity and low dielectric constant suggests that electron-electron interactions are very strong and that high-energy carriers should efficiently generate e-h pairs. Here, I will discuss observations of highly efficient generation of e-h pairs due to impact excitation in SWNT p-n junction photodiodes [4]. To investigate optoelectronic transport properties of individual SWNT photodiodes, we focus a laser beam over the device while monitoring the electronic characteristics. Optical excitation into the second electronic subband E22 ˜ 2 EGAP leads to striking photocurrent steps in the device I-VSD characteristics that occur at voltage intervals of the band gap energy EGAP/ e. Spatially and spectrally resolved photocurrent combined with temperature-dependent studies suggest that these steps result from efficient generation of multiple e-h pairs from a single hot E22 carrier. We conclude that in the SWNT photodiode, a single photon with energy greater than 2EGAP is converted into multiple e-h pairs, leading to enhanced photocurrent and increased photo-conversion efficiency. [1] W. Shockley, and H. J. Queisser, Journal of Applied Physics 32, 510 (1961). [2] R. D. Schaller, and V. I. Klimov, Physical Review Letters 92 (18), 186601 (2004). [3] R. J. Ellingson, et al, Nano Letters, 5 (5), 865-871 (2005). [4] Nathaniel M. Gabor, Zhaohui Zhong, Ken Bosnick, Jiwoong Park, and Paul McEuen, Science, 325, 1367 (2009).

  12. Improved X-ray detection and particle identification with avalanche photodiodes

    CERN Document Server

    Diepold, Marc; Machado, Jorge; Amaro, Pedro; Abdou-Ahmed, Marwan; Amaro, Fernando D; Antognini, Aldo; Biraben, François; Chen, Tzu-Ling; Covita, Daniel S; Dax, Andreas J; Franke, Beatrice; Galtier, Sandrine; Gouvea, Andrea L; Götzfried, Johannes; Graf, Thomas; Hänsch, Theodor W; Hildebrandt, Malte; Indelicato, Paul; Julien, Lucile; Kirch, Klaus; Knecht, Andreas; Kottmann, Franz; Krauth, Julian J; Liu, Yi-Wei; Monteiro, Cristina M B; Mulhauser, Françoise; Naar, Boris; Nebel, Tobias; Nez, François; Santos, José Paulo; Santos, Joaquim M F dos; Schuhmann, Karsten; Szabo, Csilla I; Taqqu, David; Veloso, João F C A; Voss, Andreas; Weichelt, Birgit; Pohl, Randolf

    2015-01-01

    Avalanche photodiodes are commonly used as detectors for low energy x-rays. In this work we report on a fitting technique used to account for different detector responses resulting from photo absorption in the various APD layers. The use of this technique results in an improvement of the energy resolution at 8.2 keV by up to a factor of 2, and corrects the timing information by up to 25 ns to account for space dependent electron drift time. In addition, this waveform analysis is used for particle identification, e.g. to distinguish between x-rays and MeV electrons in our experiment.

  13. Comparison of Diffused and Implanted InSb pn-photodiodes Performance

    OpenAIRE

    Asadollahi, Ali

    2011-01-01

    In this project, two different methods for fabrication of InSb p-n photodiodes were compared. Ion implantation with Mg as a standard way to fabricate InSb p-n diodes was compared to in-diffusion of zinc atoms from the gas phase using a metal organic vapor phase epitaxy (MOVPE) system. The application of this method to the InSb system has not been previously reported. A Monte-Carlo-based simulation program (SRIM: Stopping and Range of Ions in Matter) was utilized to simulate and extract doses ...

  14. Generation efficiency of single-photon current pulses in the Geiger mode of silicon avalanche photodiodes

    International Nuclear Information System (INIS)

    Statistical fluctuations of the avalanche's multiplication efficiency were studied as applied to the single-photon (Geiger) mode of avalanche photodiodes. The distribution function of partial multiplication factors with an anomalously wide (of the order of the average) dispersion was obtained. Expressions for partial feedback factors were derived in terms of the average gain and the corresponding dependences on the diode's overvoltage were calculated. Final expressions for the photon-electric pulse's conversion were derived by averaging corresponding formulas over the coordinate of initiating photoelectron generation using the functions of optical photon absorption in silicon.

  15. Vacuum photodiode detectors for broadband vacuum ultraviolet detection in the Saha Institute of Nuclear Physics Tokamak

    Science.gov (United States)

    Rao, C. V. S.; Shankara Joisa, Y.; Hansalia, C. J.; Hui, Amit K.; Paul, Ratan; Ranjan, Prabhat

    1997-02-01

    We report on the application of the vacuum photodiode to detect vacuum ultraviolet (VUV) radiation emitted from the Saha Institute of Nuclear Physics (SINP) Tokamak. It is simple to fabricate and provides broadband spectral response in the VUV and ultrasoft x ray (10 eV-1 keV). In our design, a stainless steel photocathode is used, which has a response identical to tungsten in the wavelength range 100-1200 Å. Its surface is passivated, to minimize contamination and monolayer deposition, by electropolishing it. Some representative experimental results illustrating the range of applicability are presented with special emphasis on its performance in disruptive shots.

  16. Resilience of gated avalanche photodiodes against bright illumination attacks in quantum cryptography

    CERN Document Server

    Yuan, Z L; Shields, A J; 10.1063/1.3597221

    2011-01-01

    Semiconductor avalanche photodiodes (APDs) are commonly used for single photon detection in quantum key distribution. Recently, many attacks using bright illumination have been proposed to manipulate gated InGaAs APDs. In order to devise effective counter-measures, careful analysis of these attacks must be carried out to distinguish between incorrect operation and genuine loopholes. Here, we show that correctly-operated, gated APDs are immune to continuous-wave illumination attacks, while monitoring the photocurrent for anomalously high values is a straightforward counter-measure against attacks using temporally tailored light.

  17. Ge-Based Spin-Photodiodes for Room-Temperature Integrated Detection of Photon Helicity

    KAUST Repository

    Rinaldi, Christian

    2012-05-02

    Spin-photodiodes based on Fe/MgO/Ge(001) heterostructures are reported. These devices perform the room-temperature integrated electrical detection of the spin polarization of a photocurrent generated by circularly polarized photons with a wavelength of 1300 nm, for light pulses with intensity I 0 down to 200 μW. A forward and reverse-biased average photocurrent variation of 5.9% is measured for the complete reversal of the incident light helicity. Copyright © 2012 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  18. X-ray multi-energy radiography with "scintillator-photodiode" detectors

    CERN Document Server

    Ryzhikov, V D; Grinyov, B V; Lisetskaya, E K; Opolonin, A D; Kozin, D N

    2002-01-01

    For reconstruction of the spatial structure of many-component objects, it is proposed to use multi-radiography with detection of X-ray by combined detector arrays using detectors of ``scintillator-photodiode'' type. A theoretical model has been developed of multi-energy radiography for thickness measurements of multi-layered systems and systems with defects. Experimental studies of the sensitivity, output signal of various inspection systems based on scintillators $ZnSe(Te)$ and $CsI(Tl)$, and object image reconstruction (with organics and non-ogranics materials singled out) have been carried out.

  19. 10μm thin transmissive photodiode produced by ALBA Synchrotron and IMB-CNM-CSIC

    Science.gov (United States)

    Cruz, C.; Jover-Manas, G.; Matilla, O.; Avila, J.; Juanhuix, J.; Pellegrini, G.; Quirion, D.; Rodriguez, J.

    2015-03-01

    Thin silicon photodiodes are common X-ray beam diagnosis devices at synchrotron facilities. Here we present a new device featuring an extremely thin layer that allows X-ray transmission over 90% for energies above 10 keV. The diode has a radiation-hard silicon junction with silicon dioxide passivation and a protective entrance window. These outstanding features make this device suited for diagnostic applications in X-ray synchrotron beamlines. Hereby preliminary results of X-ray transmission, responsivity and uniformity are presented.

  20. [Study on UV-visible DOAS system based on photodiode array (PDA)].

    Science.gov (United States)

    Qin, Min; Xie, Pin-hua; Liu, Jian-guo; Liu, Wen-qing; Fang, Wu; Lu, Fan; Li, Ang; Lu, Yi-huai; Wei, Qing-nong; Dou, Ke

    2005-09-01

    A long-path differential optical absorption spectroscopy (DOAS) system is introduced. A photodiode array is employed as the detector to replace the complicated SD detector which consists of a PMT and a slotted disk. The properties of the detector and the spectrometer unit such as offset, dark current, noise, linearity, resolution, and wavelength range were measured. This system was also tested to measure SO2 and NO2 in the atmosphere. The detection limits of this system for SO2, and NO2 over a 713 m light path were determined. PMID:16379291

  1. Opto-chemical sensors based on integrated ring-shaped organic photodiodes: progress and applications

    Science.gov (United States)

    Mayr, Torsten; Abel, Tobias; Ungerböck, Birgit; Sagmeister, Martin; Charwat, Verena; Ertl, Peter; Kraker, Elke; Köstler, Stefan; Tschepp, Andreas; Lamprecht, Bernhard

    2012-10-01

    The recent advances on a monolithically integrated sensor platform based on ring-shaped organic photo detectors are presented. Various sensing chemistries based on luminescence for the detection of a number of parameters such as oxygen, carbon dioxide, humidity and pH in gaseous and/or liquid phase were investigated and optimized to the requirements of the sensor platform. Aiming on practical application, the need and methods to reference luminescence signals are evaluated including two wavelength rationing and lifetime measurements. Finally, we will discuss potential applications of the platform and present a micro-fluidic chip containing an array of integrated sensor spots and organic photodiodes.

  2. X-ray detection with a linear silicon photo-diode array

    Energy Technology Data Exchange (ETDEWEB)

    Zutavern, F.; Aton, T.; Franck, C; Schnatterly, S.

    1982-01-01

    A phosphor-coated silicon photo-diode array has been used as the detector in an ultra-high vacuum, soft X-ray emission spectrograph. In developing this detection system, measurements on a bare array, a phosphor coated array, and a phosphor coated photo-multiplier tube were made at the Synchrotron Ultraviolet Radiation Facility (SURF), NBS, Washington, D.C. The results of these measurements and the performance of this detection system will be discussed. These results will then be extrapolated into the X-ray energy range used by crystallographers.

  3. Properties of the most recent avalanche photodiodes for the CMS electromagnetic calorimeter

    CERN Document Server

    Deiters, K; Nicol, S; Patel, B; Renker, D; Reucroft, S; Rusack, R W; Sakhelashvili, T M; Swain, J D; Vikas, P

    2000-01-01

    Avalanche photodiodes (APDs) with improved characteristics are being developed by Hamamatsu Photonics for the electromagnetic calorimeter of the CMS experiment. More than 30 prototypes have been made and investigated during the last 3 years in a development program, that showed significant progress. The parameters of the most recent APDs including the long-term stability and the effect of high radiation levels with a neutron fluence of 2*10/sup 13/ n/cm/sup 2/ have been studied and are presented. (4 refs).

  4. A photodiode-based neutral particle bolometer for characterizing charge-exchanged fast-ion behavior

    Energy Technology Data Exchange (ETDEWEB)

    Clary, R.; Smirnov, A.; Dettrick, S.; Knapp, K.; Korepanov, S.; Ruskov, E. [Tri Alpha Energy, Inc., Rancho Santa Margarita, California 92688 (United States); Heidbrink, W. W.; Zhu, Y. [University of California-Irvine, Irvine, California 92697 (United States)

    2012-10-15

    A neutral particle bolometer (NPB) has been designed and implemented on Tri Alpha Energy's C-2 device in order to spatially and temporally resolve the charge-exchange losses of fast-ion populations originating from neutral beam injection into field-reversed configuration plasmas. This instrument employs a silicon photodiode as the detection device with an integrated tungsten filter coating to reduce sensitivity to light radiation. Here we discuss the technical aspects and calibration of the NPB, and report typical NPB measurement results of wall recycling effects on fast-ion losses.

  5. A photodiode-based neutral particle bolometer for characterizing charge-exchanged fast-ion behavior.

    Science.gov (United States)

    Clary, R; Smirnov, A; Dettrick, S; Knapp, K; Korepanov, S; Ruskov, E; Heidbrink, W W; Zhu, Y

    2012-10-01

    A neutral particle bolometer (NPB) has been designed and implemented on Tri Alpha Energy's C-2 device in order to spatially and temporally resolve the charge-exchange losses of fast-ion populations originating from neutral beam injection into field-reversed configuration plasmas. This instrument employs a silicon photodiode as the detection device with an integrated tungsten filter coating to reduce sensitivity to light radiation. Here we discuss the technical aspects and calibration of the NPB, and report typical NPB measurement results of wall recycling effects on fast-ion losses. PMID:23126887

  6. Behavioral electromagnetic models of high‐speed p‐i‐n photodiodes

    DEFF Research Database (Denmark)

    Jiang, Chenhui; Krozer, Viktor; Johansen, Tom Keinicke;

    2011-01-01

    This article presents a methodology for developing small‐signal behavioral electromagnetic (EM) models of p‐i‐n photodiodes (PDs) for high‐speed applications. The EM model includes RC bandwidth limitation effect and transit‐time effect. The model is capable of accurately modeling arbitrary complex...... parasitics of PD chips. It can be used to predict the optical‐to‐electrical (O/E) response of PDs with various p‐i‐n junction structures in the frequency domain at the behavioral level. Compared to equivalent circuit models, EM models avoid developing complicated circuit network to represent complex chip...

  7. Results from a test of a Cu-scintillator calorimeter module with photodiode readout

    International Nuclear Information System (INIS)

    A calorimeter module of 17 radiation lengths depth has been built. Wavelength shifter (WLS) bars coupled to rectangular silicon photodiodes (PD's) are use as readout. Considerations in the design of the WLS bars, with particular emphasis on optimising the efficiency for PD readout, are discussed. The energy resolution for electrons has been determined to be about 9%/√E between 2 and 50 GeV. The response to hadrons is presented and the prospects for the construction of a full-sized hadron calorimeter are discussed. (orig.)

  8. Far-infrared electroluminescence characteristics of an Si-based photodiode under a forward DC bias current

    International Nuclear Information System (INIS)

    At room temperature, the bias dependence of a far-infrared electroluminescence image of a photodiode is investigated in the dark condition. The results show that the electroluminescence image can be used to detect defects in the photodiode. Additionally, it is found that the electroluminescence intensity has a power law dependence on the dc bias current. The photodiode ideality factor could be obtained by a fitting a relationship between the electroluminescence intensity and the bias current. The device defect levels will be easily determined according to the infrared image and the extracted ideality factor value. This work is of guiding significance for current solar cell testing and research. (condensed matter: electronic structure, electrical, magnetic, and optical properties)

  9. Far-infrared electroluminescence characteristics of an Si-based photodiode under a forward DC bias current

    Institute of Scientific and Technical Information of China (English)

    Xiao Wen-Bo; He Xing-Dao; Zhang Zhi-Min; Gao Yi-Qing; Liu Jiang-Tao

    2012-01-01

    At room temperature,the bias dependence of a far-infrared electroluminescence image of a photodiode is investigated in the dark condition.The results show that the electroluminescence image can be used to detect defects in the photodiode.Additionally,it is found that the electroluminescence intensity has a power law dependence on the dc bias current.The photodiode ideality factor could be obtained by a fitting a relationship between the electroluminescence intensity and the bias current.The device defect levels will be easily determined according to the infrared image and the extracted ideality factor value.This work is of guiding significance for current solar cell testing and research.

  10. Electrical and Photoconductivity Properties of Al/CdFe2O4/p-Si/Al Photodiode

    Directory of Open Access Journals (Sweden)

    Mehmet Çavaş

    2016-01-01

    Full Text Available In the present study, we have investigated the effects of illumination intensity on the optical and electrical characteristics of the Al/CdFe2O4/p-Si/Al photodiode. A thin film of CdFe2O4 was fabricated using the sol-gel spin coating method that allows good thickness control and low-cost manufacturing as compared to alternative techniques. The current-voltage (I-V of the Al/CdFe2O4/p-Si/Al photodiode was measured in the dark and under different illumination intensities. The photocurrent increased with higher luminous intensity and its sensitivity has a strong dependence on the reverse bias rising from 1.08⁎10-7 A under dark conditions to 6.11⁎10-4 A at 100 mW/cm2 of illumination. The parameters of the photodiode such as ideality factor and barrier height were calculated using the thermionic emission model. The ideality factor of the Al/CdFe2O4/p-Si/Al photodiode was found to be 4.4. The barrier height was found to be 0.88 eV. The capacitance-voltage (C-V characteristics measured at different frequencies have strongly varied with frequency, decreasing with frequency. Consequently, the resulting interface density (Dit value of the Al/CdFe2O4/p-Si/Al photodiode also decreased with higher frequency. Similarly, the fitted series resistance of the Al/CdFe2O4/p-Si/Al photodiode has declined with higher frequency.

  11. An iterative method applied to optimize the design of PIN photodiodes for enhanced radiation tolerance and maximum light response

    Energy Technology Data Exchange (ETDEWEB)

    Cedola, A.P., E-mail: ariel.cedola@ing.unlp.edu.a [Grupo de Estudio de Materiales y Dispositivos Electronicos (GEMyDE), Dpto. Electrotecnia, Facultad de Ingenieria, Universidad Nacional de La Plata, 48 y 116, C.C. 91, La Plata 1900, Buenos Aires (Argentina); Cappelletti, M.A. [Grupo de Estudio de Materiales y Dispositivos Electronicos (GEMyDE), Dpto. Electrotecnia, Facultad de Ingenieria, Universidad Nacional de La Plata, 48 y 116, C.C. 91, La Plata 1900, Buenos Aires (Argentina); Casas, G. [Grupo de Estudio de Materiales y Dispositivos Electronicos (GEMyDE), Dpto. Electrotecnia, Facultad de Ingenieria, Universidad Nacional de La Plata, 48 y 116, C.C. 91, La Plata 1900, Buenos Aires (Argentina); Universidad Nacional de Quilmes, Roque Saenz Pena 352, Bernal 1876, Buenos Aires (Argentina); Peltzer y Blanca, E.L. [Grupo de Estudio de Materiales y Dispositivos Electronicos (GEMyDE), Dpto. Electrotecnia, Facultad de Ingenieria, Universidad Nacional de La Plata, 48 y 116, C.C. 91, La Plata 1900, Buenos Aires (Argentina); Instituto de Fisica de Liquidos y Sistemas Biologicos (IFLYSIB), CONICET - UNLP - CIC, La Plata 1900, Buenos Aires (Argentina)

    2011-02-11

    An iterative method based on numerical simulations was developed to enhance the proton radiation tolerance and the responsivity of Si PIN photodiodes. The method allows to calculate the optimal values of the intrinsic layer thickness and the incident light wavelength, in function of the light intensity and the maximum proton fluence to be supported by the device. These results minimize the effects of radiation on the total reverse current of the photodiode and maximize its response to light. The implementation of the method is useful in the design of devices whose operation point should not suffer variations due to radiation.

  12. A Ring-shaped photodiode designed for use in a reflectance pulse oximetry sensor in wireless health monitoring applications

    DEFF Research Database (Denmark)

    Duun, Sune; Haahr, Rasmus Grønbek; Birkelund, Karen;

    2010-01-01

    enable very low light-emitting diode (LED) driving currents for the pulse oximeter. The photodiode also have a two layer SiO2/SiN interference filter yielding 98% transmission at the measuring wavelengths, 660 nm and 940 nm, and suppressing other wavelengths down to 50% transmission. The photodiode has...... is demonstrated to work in a laboratory setup with a Ledtronics dual LED with wavelengths of 660 and 940 nm. Using this setup photoplethysmograms which clearly show the cardiovascular cycle have been recorded. The sensor is shown to work very well with low currents of less than 10 mA....

  13. Interplanetary space weather effects on Lunar Reconnaissance Orbiter avalanche photodiode performance

    Science.gov (United States)

    Clements, E. B.; Carlton, A. K.; Joyce, C. J.; Schwadron, N. A.; Spence, H. E.; Sun, X.; Cahoy, K.

    2016-05-01

    Space weather is a major concern for radiation-sensitive space systems, particularly for interplanetary missions, which operate outside of the protection of Earth's magnetic field. We examine and quantify the effects of space weather on silicon avalanche photodiodes (SiAPDs), which are used for interplanetary laser altimeters and communications systems and can be sensitive to even low levels of radiation (less than 50 cGy). While ground-based radiation testing has been performed on avalanche photodiode (APDs) for space missions, in-space measurements of SiAPD response to interplanetary space weather have not been previously reported. We compare noise data from the Lunar Reconnaissance Orbiter (LRO) Lunar Orbiter Laser Altimeter (LOLA) SiAPDs with radiation measurements from the onboard Cosmic Ray Telescope for the Effects of Radiation (CRaTER) instrument. We did not find any evidence to support radiation as the cause of changes in detector threshold voltage during radiation storms, both for transient detector noise and long-term average detector noise, suggesting that the approximately 1.3 cm thick shielding (a combination of titanium and beryllium) of the LOLA detectors is sufficient for SiAPDs on interplanetary missions with radiation environments similar to what the LRO experienced (559 cGy of radiation over 4 years).

  14. Development of Gated Pinned Avalanche Photodiode Pixels for High-Speed Low-Light Imaging

    Directory of Open Access Journals (Sweden)

    Tomislav Resetar

    2016-08-01

    Full Text Available This work explores the benefits of linear-mode avalanche photodiodes (APDs in high-speed CMOS imaging as compared to different approaches present in literature. Analysis of APDs biased below their breakdown voltage employed in single-photon counting mode is also discussed, showing a potentially interesting alternative to existing Geiger-mode APDs. An overview of the recently presented gated pinned avalanche photodiode pixel concept is provided, as well as the first experimental results on a 8 × 16 pixel test array. Full feasibility of the proposed pixel concept is not demonstrated; however, informative data is obtained from the sensor operating under −32 V substrate bias and clearly exhibiting wavelength-dependent gain in frontside illumination. The readout of the chip designed in standard 130 nm CMOS technology shows no dependence on the high-voltage bias. Readout noise level of 15 e - rms, full well capacity of 8000 e - , and the conversion gain of 75 µV / e - are extracted from the photon-transfer measurements. The gain characteristics of the avalanche junction are characterized on separate test diodes showing a multiplication factor of 1.6 for red light in frontside illumination.

  15. Development of Gated Pinned Avalanche Photodiode Pixels for High-Speed Low-Light Imaging.

    Science.gov (United States)

    Resetar, Tomislav; De Munck, Koen; Haspeslagh, Luc; Rosmeulen, Maarten; Süss, Andreas; Puers, Robert; Van Hoof, Chris

    2016-01-01

    This work explores the benefits of linear-mode avalanche photodiodes (APDs) in high-speed CMOS imaging as compared to different approaches present in literature. Analysis of APDs biased below their breakdown voltage employed in single-photon counting mode is also discussed, showing a potentially interesting alternative to existing Geiger-mode APDs. An overview of the recently presented gated pinned avalanche photodiode pixel concept is provided, as well as the first experimental results on a 8 × 16 pixel test array. Full feasibility of the proposed pixel concept is not demonstrated; however, informative data is obtained from the sensor operating under -32 V substrate bias and clearly exhibiting wavelength-dependent gain in frontside illumination. The readout of the chip designed in standard 130 nm CMOS technology shows no dependence on the high-voltage bias. Readout noise level of 15 e - rms, full well capacity of 8000 e - , and the conversion gain of 75 µV / e - are extracted from the photon-transfer measurements. The gain characteristics of the avalanche junction are characterized on separate test diodes showing a multiplication factor of 1.6 for red light in frontside illumination. PMID:27537882

  16. Photodiode-based cutting interruption sensor for near-infrared lasers.

    Science.gov (United States)

    Adelmann, B; Schleier, M; Neumeier, B; Hellmann, R

    2016-03-01

    We report on a photodiode-based sensor system to detect cutting interruptions during laser cutting with a fiber laser. An InGaAs diode records the thermal radiation from the process zone with a ring mirror and optical filter arrangement mounted between a collimation unit and a cutting head. The photodiode current is digitalized with a sample rate of 20 kHz and filtered with a Chebyshev Type I filter. From the measured signal during the piercing, a threshold value is calculated. When the diode signal exceeds this threshold during cutting, a cutting interruption is indicated. This method is applied to sensor signals from cutting mild steel, stainless steel, and aluminum, as well as different material thicknesses and also laser flame cutting, showing the possibility to detect cutting interruptions in a broad variety of applications. In a series of 83 incomplete cuts, every cutting interruption is successfully detected (alpha error of 0%), while no cutting interruption is reported in 266 complete cuts (beta error of 0%). With this remarkable high detection rate and low error rate, the possibility to work with different materials and thicknesses in combination with the easy mounting of the sensor unit also to existing cutting machines highlight the enormous potential for this sensor system in industrial applications.

  17. High-speed imaging and wavefront sensing with an infrared avalanche photodiode array

    CERN Document Server

    Baranec, Christoph; Riddle, Reed; Hall, Donald; Jacobson, Shane; Law, Nicholas M; Chun, Mark

    2015-01-01

    Infrared avalanche photodiode arrays represent a panacea for many branches of astronomy by enabling extremely low-noise, high-speed and even photon-counting measurements at near-infrared wavelengths. We recently demonstrated the use of an early engineering-grade infrared avalanche photodiode array that achieves a correlated double sampling read noise of 0.73 e- in the lab, and a total noise of 2.52 e- on sky, and supports simultaneous high-speed imaging and tip-tilt wavefront sensing with the Robo-AO visible-light laser adaptive optics system at the Palomar Observatory 1.5-m telescope. We report here on the improved image quality achieved simultaneously at visible and infrared wavelengths by using the array as part of an image stabilization control-loop with adaptive-optics sharpened guide stars. We also discuss a newly enabled survey of nearby late M-dwarf multiplicity as well as future uses of this technology in other adaptive optics and high-contrast imaging applications.

  18. Reversed Three-Dimensional Visible Light Indoor Positioning Utilizing Annular Receivers with Multi-Photodiodes.

    Science.gov (United States)

    Xu, Yinfan; Zhao, Jiaqi; Shi, Jianyang; Chi, Nan

    2016-01-01

    Exploiting the increasingly wide use of light emitting diodes (LEDs) lighting, in this paper we propose a reversed indoor positioning system (IPS) based on LED visible light communication (VLC) in order to improve indoor positioning accuracy. Unlike other VLC positioning systems, we employ two annular receivers with multi-photodiodes installed on the ceiling to locate the persons who carry LEDs. The basic idea is using multi-photodiodes to calculate the angle while using the received signal strength (RSS) method to calculate the distance. The experiment results show that the effective positioning range of the proposed system is 1.8 m when the distance between two receivers is 1.2 m. Moreover, a positioning error less than 0.2 m can be achieved under the condition that the radius of the PIN circle is between 0.16 m and 0.2 m, and the distance of the transmitter-receiver plane is less than 1.8 m, which will be effective in practice. PMID:27509504

  19. Reversed Three-Dimensional Visible Light Indoor Positioning Utilizing Annular Receivers with Multi-Photodiodes

    Directory of Open Access Journals (Sweden)

    Yinfan Xu

    2016-08-01

    Full Text Available Exploiting the increasingly wide use of light emitting diodes (LEDs lighting, in this paper we propose a reversed indoor positioning system (IPS based on LED visible light communication (VLC in order to improve indoor positioning accuracy. Unlike other VLC positioning systems, we employ two annular receivers with multi-photodiodes installed on the ceiling to locate the persons who carry LEDs. The basic idea is using multi-photodiodes to calculate the angle while using the received signal strength (RSS method to calculate the distance. The experiment results show that the effective positioning range of the proposed system is 1.8 m when the distance between two receivers is 1.2 m. Moreover, a positioning error less than 0.2 m can be achieved under the condition that the radius of the PIN circle is between 0.16 m and 0.2 m, and the distance of the transmitter-receiver plane is less than 1.8 m, which will be effective in practice.

  20. Enabling accurate photodiode detection of multiple optical traps by spatial filtering

    Science.gov (United States)

    Ott, Dino; Reihani, S. Nader S.; Oddershede, Lene B.

    2014-09-01

    Dual and multiple beam optical tweezers allow for advanced trapping geometries beyond single traps, however, these increased manipulation capabilities, usually complicate the detection of position and force. The accuracy of position and force measurements is often compromised by crosstalk between the detected signals, this crosstalk leading to a systematic error on the measured forces and distances. In dual-beam optical trapping setups, the two traps are typically orthogonal polarized and crosstalk can be minimized by inserting polarization optics in front of the detector, however, this method is not perfect because of the de-polarization of the trapping beam introduced by the required high numerical aperture optics. Moreover, the restriction to two orthogonal polarisation states limits the number of detectable traps to two. Here, we present an easy-to-implement simple method to efficiently eliminate cross-talk in dual beam setups.1 The technique is based on spatial filtering and is highly compatible with standard back-focal-plane photodiode based detection. The reported method significantly improves the accuracy of force-distance measurements, e.g., of single molecules, hence providing much more scientific value for the experimental efforts. Furthermore, it opens the possibility for fast and simultaneous photodiode based detection of multiple holographically generated optical traps.

  1. Photon-counting monolithic avalanche photodiode arrays for the super collider

    International Nuclear Information System (INIS)

    In fiber tracking, calorimetry, and other high energy and nuclear physics experiments, the need arises to detect an optical signal consisting of a few photons (in some cases a single photoelectron) with a detector insensitive to magnetic fields. Previous attempts to detect a single photoelectron have involved avalanche photodiodes (APDs) operated in the Geiger mode, the visible light photon counter, and a photomultiplier tube with an APD as the anode. In this paper it is demonstrated that silicon APDs, biased below the breakdown voltage, can be used to detect a signal of a few photons with conventional pulse counting circuitry at room temperature. Moderate cooling, it is further argued, could make it possible to detect a single photoelectron. Monolithic arrays of silicon avalanche photodiodes fabricated by Radiation Monitoring Devices, Inc. (RMD) were evaluated for possible use in the Super Collider detector systems. Measurements on 3 element x 3 element (2 mm pitch) APD arrays, using pulse counting circuitry with a charge sensitive amplifier (CSA) and a Gaussian filter, are reported and found to conform to a simple noise model. The model is used to obtain the optimal operating point. Experimental results are described in Section II, modeling results in Section III, and the conclusions are summarized in Section IV

  2. Accelerated aging tests of radiation damaged lasers and photodiodes for the CMS tracker optical links

    CERN Document Server

    Gill, K; Batten, J; Cervelli, G; Grabit, R; Jensen, F; Troska, Jan K; Vasey, F

    1999-01-01

    The combined effects of radiation damage and accelerated ageing in COTS lasers and p-i-n photodiodes are presented. Large numbers of these devices are employed in future High Energy Physics experiments and it is vital that these devices are confirmed to be sufficiently robust in terms of both radiation resistance and reliability. Forty 1310 nm InGaAsP edge-emitting lasers (20 irradiated) and 30 InGaAs p- i-n photodiodes (19 irradiated) were aged for 4000 hours at 80 degrees C with periodic measurements made of laser threshold and efficiency, in addition to p-i-n leakage current and photocurrent. There were no sudden failures and there was very little wearout- related degradation in either unirradiated or irradiated sample groups. The results suggest that the tested devices have a sufficiently long lifetime to operate for at least 10 years inside the Compact Muon Solenoid experiment despite being exposed to a harsh radiation environment. (13 refs).

  3. Modelling and measurement of the absolute level of power radiated by antenna integrated THz UTC photodiodes.

    Science.gov (United States)

    Natrella, Michele; Liu, Chin-Pang; Graham, Chris; van Dijk, Frederic; Liu, Huiyun; Renaud, Cyril C; Seeds, Alwyn J

    2016-05-30

    We determine the output impedance of uni-travelling carrier (UTC) photodiodes at frequencies up to 400 GHz by performing, for the first time, 3D full-wave modelling of detailed UTC photodiode structures. In addition, we demonstrate the importance of the UTC impedance evaluation, by using it in the prediction of the absolute power radiated by an antenna integrated UTC, over a broad frequency range and confirming the predictions by experimental measurements up to 185 GHz. This is done by means of 3D full-wave modelling and is only possible since the source (UTC) to antenna impedance match is properly taken into account. We also show that, when the UTC-to-antenna coupling efficiency is modelled using the classical junction-capacitance/series-resistance concept, calculated and measured levels of absolute radiated power are in substantial disagreement, and the maximum radiated power is overestimated by a factor of almost 7 dB. The ability to calculate the absolute emitted power correctly enables the radiated power to be maximised through optimisation of the UTC-to-antenna impedance match.

  4. Modelling and measurement of the absolute level of power radiated by antenna integrated THz UTC photodiodes.

    Science.gov (United States)

    Natrella, Michele; Liu, Chin-Pang; Graham, Chris; van Dijk, Frederic; Liu, Huiyun; Renaud, Cyril C; Seeds, Alwyn J

    2016-05-30

    We determine the output impedance of uni-travelling carrier (UTC) photodiodes at frequencies up to 400 GHz by performing, for the first time, 3D full-wave modelling of detailed UTC photodiode structures. In addition, we demonstrate the importance of the UTC impedance evaluation, by using it in the prediction of the absolute power radiated by an antenna integrated UTC, over a broad frequency range and confirming the predictions by experimental measurements up to 185 GHz. This is done by means of 3D full-wave modelling and is only possible since the source (UTC) to antenna impedance match is properly taken into account. We also show that, when the UTC-to-antenna coupling efficiency is modelled using the classical junction-capacitance/series-resistance concept, calculated and measured levels of absolute radiated power are in substantial disagreement, and the maximum radiated power is overestimated by a factor of almost 7 dB. The ability to calculate the absolute emitted power correctly enables the radiated power to be maximised through optimisation of the UTC-to-antenna impedance match. PMID:27410104

  5. Magnetic resonance in films and photodiodes based on poly-(phenyl-phenylene-vinylene)

    Science.gov (United States)

    Dyakonov, V.; Rösler, G.; Schwoerer, M.; Blumstengel, S.; Lüders, K.

    1996-02-01

    Films of poly-(2-phenyl-1,4-phenylene-vinylene) (PPPV) and photodiodes with PPPV as an active layer were studied by optically (ODMR) and electrically (EDMR) detected electron-spin resonance (ESR). Two different signals were observed in ODMR: enhancement of the photoluminescence (PL) at g=2.01 due to recombination of the photogenerated polarons (s=1/2), and a half-field enhancement signal, attributed to the fusion of triplet excitons. Both processes lead to the formation of singlet excitons. The spectral dependence of the s=1/2 signal follows the low energy part of the PL spectrum, indicating that delayed recombination of distant polarons is influenced by ESR, whereas the cw PL contains both prompt and delayed contributions. The linewidth and the intensity of the ODMR signal depend on the PL excitation intensity. Both effects are due to a decrease of the recombination lifetime of the polaron pairs at higher intensities. The relative decrease of the short-circuit photocurrent ISC through a PPPV photodiode by ESR saturation is due to recombination of nonthermalized, nongeminate excess charge polarons in the active layer of the device. This effect is at least two orders of magnitude stronger than the enhancement of total PL at the same temperature. This feature is found to be common for conjugated polymers investigated so far, and reflects the fact that the total photogenerated ISC is spin dependent, whereas ODMR selects only the nongeminate portion of recombining species in the sample.

  6. Noise Temperature Characteristics and Gain-control of Avalanche Photodiodes for Laser Radar

    Institute of Scientific and Technical Information of China (English)

    CAI Xi-ping; SHANG Hong-Bo; BAI Ji-yuan; YANG Shuang; WANG Li-na

    2008-01-01

    Avalanche photodiodes(APDs) are promising light sensors with high quantum efficiency and low noise. It has been extensively used in radiation detection, laser radar and other weak signal detection fields. Unlike other photodiodes, APD is a very sensitive light detector with very high internal gain. The basic theory shows that the gain of APD is related to the temperature. The internal gain fluctuates with the variation of temperature. Investigated was the influence of the variation of the gain induced by the fluctuation of temperature on the output from APD for a very weak laser pulse input in laser radar. An active reverse-biased voltage compensation method is used to stabilize the gain of APD. An APD model is setup to simulate the detection of light pulse signal. The avalanche process, various noises and temperature's effect are all included in the model. Our results show that for the detection of weak light signal such as in laser radar, even a very small fluctuation of temperature could cause a great effect on APD's gain. The results show that the signal-to-noise ratio of the APD's output could be improved effectively with the active gain-control system.

  7. Design and evaluation of a 2D array PIN photodiode bump bonded to readout IC for the low energy x-ray detector.

    Science.gov (United States)

    Yuk, Sunwoo; Park, Shin-Woong; Yi, Yun

    2006-01-01

    A 2D array radiation sensor, consisting of an array of PIN photodiodes bump bonded to readout integrated circuit (IC), has been developed for operation with low energy X-rays. The PIN photodiode array and readout IC for this system have been fabricated. The main performance measurements are the following: a few pA-scale leakage current, 350 pF junction capacitance, 30 microm-depth depletion layer and a 250 microm intrinsic layer at zero bias. This PIN photodiode array and readout IC were fabricated using a PIN photodiode process and standard 0.35 microm CMOS technology, respectively. The readout circuit is operated from a 3.3 V single power supply. Finally, a 2D array radiation sensor has been developed using bump bonding between the PIN photodiode and the readout electronics. PMID:17946079

  8. Removal Natural Organic Matter (NOM in Peat Water from Wetland Area by Coagulation-Ultrafiltration Hybrid Process with Pretreatment Two-Stage Coagulation

    Directory of Open Access Journals (Sweden)

    Mahmud Mahmud

    2013-11-01

    Full Text Available The primary problem encountered in the application of membrane technology was membrane fouling. During this time, hybrid process by coagulation-ultrafiltration in drinking water treatment that has been conducted by some research, using by one-stage coagulation. The goal of this research was to investigate the effect of two-stage coagulation as a pretreatment towards performance of the coagulation-ultrafiltration hybrid process for removal NOM in the peat water. Coagulation process, either with the one-stage or two-stage coagulation was very good in removing charge hydrophilic fraction, i.e. more than 98%. NOM fractions of the peat water, from the most easily removed by the two-stage coagulation and one-stage coagulation process was charged hydrophilic>strongly hydrophobic>weakly hydrophobic>neutral hydrophilic. The two-stage coagulation process could removed UV254 and colors with a little better than the one-stage coagulation at the optimum coagulant dose. Neutral hydrophilic fraction of peat water NOM was the most influential fraction of UF membrane fouling. The two-stage coagulation process better in removing the neutral hidrophilic fraction, while removing of the charged hydrophilic, strongly hydrophobic and weakly hydrophobic similar to the one-stage coagulation. Hybrid process by pretreatment with two-stage coagulation, beside can increased removal efficiency of UV254 and color, also can reduced fouling rate of the ultrafiltration membraneIt must not exceed 250 words, contains a brief summary of the text, covering the whole manuscript without being too elaborate on every section. Avoid any abbreviation, unless it is a common knowledge or has been previously stated.

  9. Mechanical and thermal design of hybrid blankets

    International Nuclear Information System (INIS)

    The thermal and mechanical aspects of hybrid reactor blanket design considerations are discussed. This paper is intended as a companion to that of J. D. Lee of Lawrence Livermore Laboratory on the nuclear aspects of hybrid reactor blanket design. The major design characteristics of hybrid reactor blankets are discussed with emphasis on the areas of difference between hybrid reactors and standard fusion or fission reactors. Specific examples are used to illustrate the design tradeoffs and choices that must be made in hybrid reactor design. These examples are drawn from the work on the Mirror Hybrid Reactor

  10. Optimization of a guard ring structure in Geiger-mode avalanche photodiodes fabricated at National NanoFab Center

    Science.gov (United States)

    Lim, K. T.; Kim, H.; Cho, M.; Kim, Y.; Kim, C.; Kim, M.; Lee, D.; Kang, D.; Yoo, H.; Park, K.; Sul, W. S.; Cho, G.

    2016-01-01

    A typical Geiger-mode avalanche photodiode (G-APD) contains a guard ring that protects the structure from having an edge breakdown due to the lowering of electric fields at junction curvatures. In this contribution, G-APDs with a virtual guard ring (vGR) merged with n-type diffused guard ring (nGR) in various sizes were studied to find the optimal design for G-APDs fabricated at National NanoFab Center (NNFC) . The sensors were fabricated via a customized CMOS process with a micro-cell size of 65× 65 μm2 on a 200 mm p-type epitaxial layer wafer. I-V characteristic curves for proposed structures were measured on a wafer-level with an auto probing system and plotted together to compare their performance. A vGR width of 1.5 μm and a nGR width of 1.5 μm with an overlapping between vGR and nGR of 1.5 μm showed the lowest leakage current before the breakdown voltage while suppressing the edge breakdown. Furthermore, the current level of the lowest-leakage-current structure was as low as that of only vGR with a width of 2.0 μm, indicating that the structure is also area efficient. Based on these results, the design with vGR, nGR, and OL with width of 1.5 μm is determined to be the optimal structure for G-APDs fabricated at NNFC.

  11. Application of the hybrid approach to the benchmark dose of urinary cadmium as the reference level for renal effects in cadmium polluted and non-polluted areas in Japan

    Energy Technology Data Exchange (ETDEWEB)

    Suwazono, Yasushi, E-mail: suwa@faculty.chiba-u.jp [Department of Occupational and Environmental Medicine, Graduate School of Medicine, Chiba University, 1-8-1 Inohana, Chuoku, Chiba 260-8670 (Japan); Nogawa, Kazuhiro; Uetani, Mirei [Department of Occupational and Environmental Medicine, Graduate School of Medicine, Chiba University, 1-8-1 Inohana, Chuoku, Chiba 260-8670 (Japan); Nakada, Satoru [Safety and Health Organization, Chiba University, 1-33 Yayoicho, Inageku, Chiba 263-8522 (Japan); Kido, Teruhiko [Department of Community Health Nursing, Kanazawa University School of Health Sciences, 5-11-80 Kodatsuno, Kanazawa, Ishikawa 920-0942 (Japan); Nakagawa, Hideaki [Department of Epidemiology and Public Health, Kanazawa Medical University, 1-1 Daigaku, Uchnada, Ishikawa 920-0293 (Japan)

    2011-02-15

    Objectives: The aim of this study was to evaluate the reference level of urinary cadmium (Cd) that caused renal effects. An updated hybrid approach was used to estimate the benchmark doses (BMDs) and their 95% lower confidence limits (BMDL) in subjects with a wide range of exposure to Cd. Methods: The total number of subjects was 1509 (650 men and 859 women) in non-polluted areas and 3103 (1397 men and 1706 women) in the environmentally exposed Kakehashi river basin. We measured urinary cadmium (U-Cd) as a marker of long-term exposure, and {beta}2-microglobulin ({beta}2-MG) as a marker of renal effects. The BMD and BMDL that corresponded to an additional risk (BMR) of 5% were calculated with background risk at zero exposure set at 5%. Results: The U-Cd BMDL for {beta}2-MG was 3.5 {mu}g/g creatinine in men and 3.7 {mu}g/g creatinine in women. Conclusions: The BMDL values for a wide range of U-Cd were generally within the range of values measured in non-polluted areas in Japan. This indicated that the hybrid approach is a robust method for different ranges of cadmium exposure. The present results may contribute further to recent discussions on health risk assessment of Cd exposure.

  12. Application of the hybrid approach to the benchmark dose of urinary cadmium as the reference level for renal effects in cadmium polluted and non-polluted areas in Japan

    International Nuclear Information System (INIS)

    Objectives: The aim of this study was to evaluate the reference level of urinary cadmium (Cd) that caused renal effects. An updated hybrid approach was used to estimate the benchmark doses (BMDs) and their 95% lower confidence limits (BMDL) in subjects with a wide range of exposure to Cd. Methods: The total number of subjects was 1509 (650 men and 859 women) in non-polluted areas and 3103 (1397 men and 1706 women) in the environmentally exposed Kakehashi river basin. We measured urinary cadmium (U-Cd) as a marker of long-term exposure, and β2-microglobulin (β2-MG) as a marker of renal effects. The BMD and BMDL that corresponded to an additional risk (BMR) of 5% were calculated with background risk at zero exposure set at 5%. Results: The U-Cd BMDL for β2-MG was 3.5 μg/g creatinine in men and 3.7 μg/g creatinine in women. Conclusions: The BMDL values for a wide range of U-Cd were generally within the range of values measured in non-polluted areas in Japan. This indicated that the hybrid approach is a robust method for different ranges of cadmium exposure. The present results may contribute further to recent discussions on health risk assessment of Cd exposure.

  13. Analysis of taxines in Taxus plant material and cell cultures by hplc photodiode array and hplc-electrospray mass spectrometry

    NARCIS (Netherlands)

    Theodoridis, G.; Laskaris, G.; Rozendaal, E.L.M.; Verpoorte, R.

    2001-01-01

    A semi-purified Taxus baccata needles extract was analysed by RP-HPLC. More than 18 taxines and cinnamates were detected by photodiode array detection and LC-MS, 10 of them being positively identified. Furthermore, 10-deacetyl baccatin III (paclitaxel's main precursor) and other taxanes were also fo

  14. Optical performance of B-layer ultra-shallow-junction silicon photodiodes in the VUV spectral range

    NARCIS (Netherlands)

    Shi, L.; Sarubbi, F.; Nanver, L.K.; Kroth, U.; Gottwald, A.; Nihtianov, S.

    2010-01-01

    In recent work, a novel silicon-based photodiode technology was reported to be suitable for producing radiation detectors for 193 nm deep-ultraviolet light and for the extreme-ultraviolet (EUV) spectral range. The devices were developed and fabricated at the Delft Institute of Microsystems and Nanoe

  15. A primary standard of optical power based on induced-junction silicon photodiodes operated at room temperature

    Science.gov (United States)

    Dönsberg, Timo; Sildoja, Meelis; Manoocheri, Farshid; Merimaa, Mikko; Petroff, Leo; Ikonen, Erkki

    2014-06-01

    We present the design and construction of a new compact room temperature predictable quantum efficient detector (PQED). It consists of two custom-made induced-junction photodiodes mounted in a wedge trap configuration and a window aligned at Brewster's angle for high transmission of p polarized light. The window can also be removed, in which case a dry nitrogen flow system is utilized to prevent dust contamination of the photodiodes. Measurements of individual detectors at the wavelength of 488 nm indicate that reflectance and spectral responsivity are consistent within 4 ppm and 13 ppm peak-to-peak variation, respectively, and agree with the predicted values. The spatial non-uniformity of the responsivity of the PQED is an order of magnitude lower than that of single photodiodes. The internal quantum efficiency of the photodiodes is concluded to be spatially uniform within 50 ppm. These measurement results—together with the responsivity predictable by fundamental laws of physics—provide evidence that the room temperature PQED may replace the cryogenic radiometer as a primary standard of optical power in the visible wavelength range of 380 nm to 780 nm.

  16. Al0.52In0.48P avalanche photodiodes for soft X-ray spectroscopy

    International Nuclear Information System (INIS)

    The performance of Al0.52In0.48P avalanche photodiodes was assessed as soft X-ray detectors at room temperature. The effect of the avalanche gain improved the energy resolution and an energy resolution (FWHM) of 682 eV is reported for 5.9 keV X-rays

  17. Hybrid photonic chip interferometer for embedded metrology

    Science.gov (United States)

    Kumar, P.; Martin, H.; Maxwell, G.; Jiang, X.

    2014-03-01

    Embedded metrology is the provision of metrology on the manufacturing platform, enabling measurement without the removal of the work piece. Providing closer integration of metrology upon the manufacturing platform can lead to the better control and increased throughput. In this work we present the development of a high precision hybrid optical chip interferometer metrology device. The complete metrology sensor system is structured into two parts; optical chip and optical probe. The hybrid optical chip interferometer is based on a silica-on-silicon etched integrated-optic motherboard containing waveguide structures and evanescent couplers. Upon the motherboard, electro-optic components such as photodiodes and a semiconductor gain block are mounted and bonded to provide the required functionality. The key structure in the device is a tunable laser module based upon an external-cavity diode laser (ECDL). Within the cavity is a multi-layer thin film filter which is rotated to select the longitudinal mode at which the laser operates. An optical probe, which uses a blazed diffracting grating and collimating objective lens, focuses light of different wavelengths laterally over the measurand. Incident laser light is then tuned in wavelength time to effectively sweep an `optical stylus' over the surface. Wavelength scanning and rapid phase shifting can then retrieve the path length change and thus the surface height. We give an overview of the overall design of the final hybrid photonic chip interferometer, constituent components, device integration and packaging as well as experimental test results from the current version now under evaluation.

  18. Hybrid Metaheuristics

    CERN Document Server

    2013-01-01

    The main goal of this book is to provide a state of the art of hybrid metaheuristics. The book provides a complete background that enables readers to design and implement hybrid metaheuristics to solve complex optimization problems (continuous/discrete, mono-objective/multi-objective, optimization under uncertainty) in a diverse range of application domains. Readers learn to solve large scale problems quickly and efficiently combining metaheuristics with complementary metaheuristics, mathematical programming, constraint programming and machine learning. Numerous real-world examples of problems and solutions demonstrate how hybrid metaheuristics are applied in such fields as networks, logistics and transportation, bio-medical, engineering design, scheduling.

  19. High range precision laser radar system using a Pockels cell and a quadrant photodiode

    Science.gov (United States)

    Jo, Sungeun; Kong, Hong Jin; Bang, Hyochoong; Kim, Jae-Wan; Jeon, Byoung Goo

    2016-05-01

    We have proposed and demonstrated a novel technique to measure distance with high range precision. To meet the stringent requirements of a variety of applications, range precision is an important specification for laser radar systems. Range precision in conventional laser radar systems is limited by several factors, namely laser pulse width, the bandwidth of a detector, the timing resolution of the time to digital converter, shot noise and timing jitters generated by electronics. The proposed laser radar system adopts a Pockels cell and a quadrant photodiode and only measures the energy of a laser pulse to obtain range so that the effect of those factors is reduced in comparison to conventional systems. In the proposed system, the measured range precision was 5.7 mm with 100 laser pulses. The proposed method is expected to be an alternative method for laser radar system requiring high range precision in many applications.

  20. Radiation effects induced in pin photodiodes by 40- and 85-MeV protons

    Science.gov (United States)

    Becher, J.; Kernell, R. L.; Reft, C. S.

    1985-01-01

    PIN photodiodes were bombarded with 40- and 85-MeV protons to a fluence of 1.5 x 10 to the 11th power p/sq cm, and the resulting change in spectral response in the near infrared was determined. The photocurrent, dark current and pulse amplitude were measured as a function of proton fluence. Changes in these three measured properties are discussed in terms of changes in the diode's spectral response, minority carrier diffusion length and depletion width. A simple model of induced radiation effects is presented which is in good agreement with the experimental results. The model assumes that incident protons produce charged defects within the depletion region simulating donor type impurities.

  1. Study of X-ray emission from plasma focus device using vacuum photodiode

    Science.gov (United States)

    Talukdar, N.; Borthakur, T. K.; Neog, N. K.

    2013-10-01

    A newly fabricated vacuum photodiode (VPD) is used to measure time resolved X-ray emission and electron temperature from plasma focus device operated in hydrogen medium. The VPD signals are compared with the PIN diode signal and observed to be of similar in nature. The acquired signals from VPD are deduced to measure electron temperature and X-ray radiated power for four different anode tips (cylindrical, diverging, oval and converging). The electron temperatures are found to be 0.64, 1.5, 0.60 and 0.55 keV for cylindrical, diverging, oval and converging anode tips respectively in hydrogen plasma. The X-ray radiated powers are observed to be varying with respect to the shape of the anode tips and it is found highest in case of converging tip and lowest for the diverging one. Results indicate that VPD could efficiently be employed as an X-ray diagnostics in plasma focus device.

  2. PIN photodiodes irradiated with 40- and 85-MeV protons

    Science.gov (United States)

    Reft, C. S.; Becher, J.; Kernell, R. L.

    1985-01-01

    PIN photodiodes were bombarded with 40- and 85-MeV protons to a fluence of 1.5 x 10 to the 11th p/sq cm, and the resulting change in spectral response in the near infrared was determined. The photocurrent, dark current, and pulse amplitude were measured as a function of proton fluence. Changes in these three measured properties are discussed in terms of changes in the diode's spectral response, minority carrier diffusion length, and depletion width. A simple model of induced radiation effects is presented which is in good agreement with the experimental results. The model assumes that incident protons produce charged defects within the depletion region simulating donor type impurities.

  3. Application of tomographic imaging to photodiode arrays in large helical device

    Science.gov (United States)

    Liu, Y.; Tamura, N.; Peterson, B. J.; Iwama, N.; LHD Experimental Group

    2006-10-01

    Two 20-channel absolute x-ray ultraviolet photodiode (AXUVD) cameras are being used on the large helical device for measuring the two-dimensional radiation distribution. The local radiation emissivity is obtained by inverting the measured brightnesses with linear (Tikhonov-Phillips) or nonlinear (maximum entropy) regularization methods. The most important features of these improved methods are the capability of reconstructing radiation distributions without any symmetry assumptions, built-in smoothing, and useful reconstructions with relatively few detector channels. Together with improvements in the analysis method, the current AXUVD system makes it possible to obtain radiation emissivity images of various localized radiative phenomena, such as radiation collapse or transport of impurities injected into the plasma.

  4. A method to precisely identify the afterpulses when using the S9717 avalanche photodiode

    Science.gov (United States)

    Rusu, Alexandru; Rusu, Lucian

    2015-12-01

    The detection ratio of an avalanche photodiode (APD) biased in Geiger-mode increases versus the excess voltage; the afterpulsing rate increases too. The last one can be reduced by inserting an artificial dead time and accepting a lower measuring top rate. So, in order to tune a single-photon detector system, it is necessary to exactly identify afterpulses and measure their rate; the experimental results are presented. When using the S9717 APD in Geiger-mode, the cathode to ground voltage waveform reveals the existence of a particular sequence of pulses: a usual one followed, within 1μs, by a least one appearing to have been generated for negative excess voltage values. All these characteristics are the signature of the afterpulsing generation. Based on this observation, we were able to precisely measure the afterpulsing rate.

  5. Pixelated Geiger-Mode Avalanche Photo-Diode Characterization through Dark Current Measurement

    CERN Document Server

    Amaudruz, Pierre-André; Gilhully, Colleen; Goertzen, Andrew; James, Lloyd; Kozlowski, Piotr; Retière, Fabrice; Shams, Ehsan; Sossi, Vesna; Stortz, Greg; Thiessen, Jonathan D; Thompson, Christopher J

    2013-01-01

    PIXELATED geiger-mode avalanche photodiodes(PPDs), often called silicon photomultipliers (SiPMs) are emerging as an excellent replacement for traditional photomultiplier tubes (PMTs) in a variety of detectors, especially those for subatomic physics experiments, which requires extensive test and operation procedures in order to achieve uniform responses from all the devices. In this paper, we show for two PPD brands, Hamamatsu MPPC and SensL SPM, that the dark noise rate, breakdown voltage and rate of correlated avalanches can be inferred from the sole measure of dark current as a function of operating voltage, hence greatly simplifying the characterization procedure. We introduce a custom electronics system that allows measurement for many devices concurrently, hence allowing rapid testing and monitoring of many devices at low cost. Finally, we show that the dark current of Hamamastu Multi-Pixel Photon Counter (MPPC) is rather independent of temperature at constant operating voltage, hence the current measure...

  6. A method to precisely identify the afterpulses when using the S9717 avalanche photodiode

    Energy Technology Data Exchange (ETDEWEB)

    Rusu, Alexandru, E-mail: alrusu@nipne.ro; Rusu, Lucian [“Horia Hulubei” National Institute for Physics and Nuclear Engineering, Reactorului Street, No. 34, City Măgurele, jud. Ilfov, POB 077125 (Romania)

    2015-12-07

    The detection ratio of an avalanche photodiode (APD) biased in Geiger-mode increases versus the excess voltage; the afterpulsing rate increases too. The last one can be reduced by inserting an artificial dead time and accepting a lower measuring top rate. So, in order to tune a single-photon detector system, it is necessary to exactly identify afterpulses and measure their rate; the experimental results are presented. When using the S9717 APD in Geiger-mode, the cathode to ground voltage waveform reveals the existence of a particular sequence of pulses: a usual one followed, within 1μs, by a least one appearing to have been generated for negative excess voltage values. All these characteristics are the signature of the afterpulsing generation. Based on this observation, we were able to precisely measure the afterpulsing rate.

  7. Practical photon number detection with electric field-modulated silicon avalanche photodiodes.

    Science.gov (United States)

    Thomas, O; Yuan, Z L; Shields, A J

    2012-01-01

    Low-noise single-photon detection is a prerequisite for quantum information processing using photonic qubits. In particular, detectors that are able to accurately resolve the number of photons in an incident light pulse will find application in functions such as quantum teleportation and linear optics quantum computing. More generally, such a detector will allow the advantages of quantum light detection to be extended to stronger optical signals, permitting optical measurements limited only by fluctuations in the photon number of the source. Here we demonstrate a practical high-speed device, which allows the signals arising from multiple photon-induced avalanches to be precisely discriminated. We use a type of silicon avalanche photodiode in which the lateral electric field profile is strongly modulated in order to realize a spatially multiplexed detector. Clearly discerned multiphoton signals are obtained by applying sub-nanosecond voltage gates in order to restrict the detector current. PMID:22273682

  8. Avalanche photodiode with high responsivity in 0.35 μm CMOS

    Science.gov (United States)

    Gaberl, Wolfgang; Schneider-Hornstein, Kerstin; Enne, Reinhard; Steindl, Bernhard; Zimmermann, Horst

    2014-04-01

    The presented linear mode avalanche photodiode (APD) uses the standard layers and process steps available in the 0.35-μm Si bulk CMOS process. Due to a low-doped epitaxial layer with a resistivity of 664 Ω cm, a deep intrinsic zone is realized to enable a large depleted absorption region at already moderate bias voltages and therefore ensures a high low-voltage responsivity. In combination with avalanche gain at high bias voltages, this leads to an overall responsivity of 1.7×105 A/W at 1.1 nW optical input power and 670-nm wavelength. The maximum achieved avalanche gain was 4.94×105. The maximum -3 dB frequency of 700 MHz was measured at a reverse bias voltage of 30 V and an optical input power of 14.7 μW.

  9. Numerical analysis of single photon detection avalanche photodiodes operated in the Geiger mode

    Science.gov (United States)

    Sugihara, K.; Yagyu, E.; Tokuda, Y.

    2006-06-01

    For a wide range of the thicknesses of the charge and the multiplication layers, detection efficiency and dark count probability are numerically investigated for GaInAs/InP single photon detection avalanche photodiodes (APD's) which are operated in the Geiger mode. Breakdown probability and dark currents are calculated to evaluate detection efficiency and dark count probability. The result shows that dark count probability can be significantly reduced by increasing the thickness of the charge layer, whereas detection efficiency is expected to decline steeply at some thickness of the charge layer. Moreover, increasing the thickness of the multiplication layer does not continue to reduce dark count probability, which increases when the multiplication layer is thicker than a critical thickness. Finally, we show a design guideline of single photon detection APD's with higher detection efficiency and lower dark count probability.

  10. A cooled avalanche photodiode detector for X-ray magnetic diffraction experiments

    CERN Document Server

    Kishimoto, S; Ito, M

    2001-01-01

    A cooled avalanche photodiode (APD) detector was developed for X-ray magnetic diffraction experiments. A stack of four silicon APDs was cooled down to 243 K by a thermoelectric cooler. The energy widths of 0.89 and 1.55 keV (FWHM) were obtained for 8.05 keV X-rays at 1x10 sup 6 s sup - sup 1 and for 16.53 keV X-rays at 2x10 sup 6 s sup - sup 1 , respectively. Test measurements of X-ray magnetic diffraction were executed using a terbium single crystal and white synchrotron radiation. A peak width of (1 0 3) reflection (5.4 keV) was roughly three times wider than that with a high-purity germanium detector.

  11. Analysis of genetically modified organisms by pyrosequencing on a portable photodiode-based bioluminescence sequencer.

    Science.gov (United States)

    Song, Qinxin; Wei, Guijiang; Zhou, Guohua

    2014-07-01

    A portable bioluminescence analyser for detecting the DNA sequence of genetically modified organisms (GMOs) was developed by using a photodiode (PD) array. Pyrosequencing on eight genes (zSSIIb, Bt11 and Bt176 gene of genetically modified maize; Lectin, 35S-CTP4, CP4EPSPS, CaMV35S promoter and NOS terminator of the genetically modified Roundup ready soya) was successfully detected with this instrument. The corresponding limit of detection (LOD) was 0.01% with 35 PCR cycles. The maize and soya available from three different provenances in China were detected. The results indicate that pyrosequencing using the small size of the detector is a simple, inexpensive, and reliable way in a farm/field test of GMO analysis. PMID:24518318

  12. Measurement-based characterization of multipixel avalanche photodiodes for scintillating detectors

    CERN Document Server

    Dziewiecki, M

    2012-01-01

    Multipixel avalanche photodiodes (MAPD) are recently gaining popularity in high energy physics experiments as an attractive replacement for photomultiplier tubes, which have been extensively used for many years as a part of various scintillating detectors. Their low price, small dimensions and another features facilitating their use (like mechanical shock resistance, magnetic field immunity or moderate supply voltage) make the MAPDs a good choice for commercial use as well, what is reflected in growing number of producers as well as MAPD models available on the market. This dissertation presents Author’s experience with MAPD measurements and modelling, gained during his work on the T2K (Tokai-to-Kamioka) long-baseline neutrino experiment, carried out by an international collaboration in Japan. First, operation principle of the MAPD, definitions of various parameters and measurement methods are discussed. Then, a device for large-scale MAPD measurements and related data processing methods are described. Fina...

  13. Germanium-tin multiple quantum well on silicon avalanche photodiode for photodetection at two micron wavelength

    Science.gov (United States)

    Dong, Yuan; Wang, Wei; Lee, Shuh Ying; Lei, Dian; Gong, Xiao; Khai Loke, Wan; Yoon, Soon-Fatt; Liang, Gengchiau; Yeo, Yee-Chia

    2016-09-01

    We report the demonstration of a germanium-tin multiple quantum well (Ge0.9Sn0.1 MQW)-on-Si avalanche photodiode (APD) for light detection near the 2 μm wavelength range. The measured spectral response covers wavelengths from 1510 to 2003 nm. An optical responsivity of 0.33 A W-1 is achieved at 2003 nm due to the internal avalanche gain. In addition, a thermal coefficient of breakdown voltage is extracted to be 0.053% K-1 based on the temperature-dependent dark current measurement. As compared to the traditional 2 μm wavelength APDs, the Si-based APD is promising for its small excess noise factor, less stringent demand on temperature stability, and its compatibility with silicon technology.

  14. Spray coated indium-tin-oxide-free organic photodiodes with PEDOT:PSS anodes

    Directory of Open Access Journals (Sweden)

    Morten Schmidt

    2014-10-01

    Full Text Available In this paper we report on Indium Tin Oxide (ITO-free spray coated organic photodiodes with an active layer consisting of a poly(3-hexylthiophen (P3HT and [6,6]-phenyl-C61-butyric acid methyl ester (PCBM blend and patterned poly(3,4-ethylenedioxythiophene:poly(styrenesulfonate (PEDOT:PSS electrodes. External quantum efficiency and current voltage characteristics under illuminated and dark conditions as well as cut-off frequencies for devices with varying active and hole conducting layer thicknesses were measured in order to characterize the fabricated devices. 60% quantum efficiency as well as nearly four orders of magnitude on-off ratios have been achieved. Those values are comparable with standard ITO devices.

  15. Measurement of charge transfer potential barrier in pinned photodiode CMOS image sensors

    Science.gov (United States)

    Chen, Cao; Bing, Zhang; Junfeng, Wang; Longsheng, Wu

    2016-05-01

    The charge transfer potential barrier (CTPB) formed beneath the transfer gate causes a noticeable image lag issue in pinned photodiode (PPD) CMOS image sensors (CIS), and is difficult to measure straightforwardly since it is embedded inside the device. From an understanding of the CTPB formation mechanism, we report on an alternative method to feasibly measure the CTPB height by performing a linear extrapolation coupled with a horizontal left-shift on the sensor photoresponse curve under the steady-state illumination. The theoretical study was performed in detail on the principle of the proposed method. Application of the measurements on a prototype PPD-CIS chip with an array of 160 × 160 pixels is demonstrated. Such a method intends to shine new light on the guidance for the lag-free and high-speed sensors optimization based on PPD devices. Project supported by the National Defense Pre-Research Foundation of China (No. 51311050301095).

  16. All-solution based device engineering of multilayer polymeric photodiodes: Minimizing dark current

    Science.gov (United States)

    Keivanidis, Panagiotis E.; Khong, Siong-Hee; Ho, Peter K. H.; Greenham, Neil C.; Friend, Richard H.

    2009-04-01

    We present photodiodes fabricated with several layers of semiconducting polymers, designed to show low dark current under reverse bias operation. Dark current minimization is achieved through the presence of additional polymer layers that reduce charge carrier injection in reverse bias, when in contact with the device electrodes. All polymer layers are deposited via spin coating and are photocross-linked for allowing further polymer layer deposition, by using a bis-fluorinated phenyl-azide photocross-linking agent. Dark current density values as low as 40 pA/mm2 are achieved with a corresponding external quantum efficiency (EQE) of 20% at a reverse bias of -0.5 V when an electron-blocking layer is used. Dark current is further reduced when both an electron- and a hole-blocking layer are used but the EQE falls significantly.

  17. Mechanisms of the degradation of Schottky-barrier photodiodes based on ZnS single crystals

    Energy Technology Data Exchange (ETDEWEB)

    Korsunska, N. E.; Shulga, E. P.; Stara, T. R., E-mail: stara-t@ukr.net; Litvin, P. M.; Bondarenko, V. A. [National Academy of Sciences of Ukraine, Lashkarev Institute of Semiconductor Physics (Ukraine)

    2016-01-15

    The effect of ultraviolet (UV) illumination on the electrical and spectral characteristics of Schottky-barrier photodiodes based on ZnS single crystals is studied. It is found that irradiation deteriorates their photosensitivity and changes the current–voltage and capacitance–voltage characteristics and the surface profile of the blocking electrode. It is shown that the main reason for a decrease in the photosensitivity of the diodes is the photoinduced drift of mobile donors in the electric field of the barrier. This drift depends on the crystallographic orientation of the surface being irradiated. Another photoinduced process observed in the diodes is photolysis of the ZnS crystal. This process mainly determines the change in the electrical characteristics of the diodes and in the surface profile of the electrode at an insignificant change in the photosensitivity.

  18. Switching characteristic and capacitance analysis of a-Si:H pinpin photodiodes for visible range telecommunications

    Science.gov (United States)

    Fantoni, A.; Fernandes, M.; Louro, P.; Vieira, M.

    2016-05-01

    The device under study is an a-SiC:H/a-Si:H pinpin photodiodes produced by PECVD (Plasma Enhanced Chemical Vapour Deposition) and has a structure that consists of a p-i'(a-SiC:H)-n/p-i(a-Si:H)-n heterostructure with low conductivity doped layers. This device structure has been demonstrated useful in optical communications that use the WDM technique to encode multiple signals in the visible light range. We present in this work experimental results about C-V measurements of the device under complex conditions of illumination. Also it is presented an analysis based on the transient response of the device when illuminated by a pulsed light, with and without optical bias superposition. Rising and decaying times of the collected photocurrent will be outlined under the different conditions. A simulation study outlines the role played by each pin substructure on the response speed and gives some hint on the possible optimization of this device.

  19. Plasmonic field confinement for separate absorption-multiplication in InGaAs nanopillar avalanche photodiodes

    Science.gov (United States)

    Farrell, Alan C.; Senanayake, Pradeep; Hung, Chung-Hong; El-Howayek, Georges; Rajagopal, Abhejit; Currie, Marc; Hayat, Majeed M.; Huffaker, Diana L.

    2015-12-01

    Avalanche photodiodes (APDs) are essential components in quantum key distribution systems and active imaging systems requiring both ultrafast response time to measure photon time of flight and high gain to detect low photon flux. The internal gain of an APD can improve system signal-to-noise ratio (SNR). Excess noise is typically kept low through the selection of material with intrinsically low excess noise, using separate-absorption-multiplication (SAM) heterostructures, or taking advantage of the dead-space effect using thin multiplication regions. In this work we demonstrate the first measurement of excess noise and gain-bandwidth product in III-V nanopillars exhibiting substantially lower excess noise factors compared to bulk and gain-bandwidth products greater than 200 GHz. The nanopillar optical antenna avalanche detector (NOAAD) architecture is utilized for spatially separating the absorption region from the avalanche region via the NOA resulting in single carrier injection without the use of a traditional SAM heterostructure.

  20. Alpha particles spectrometer with photodiode PIN; Espectrometro de particulas alfa con fotodiodo PIN

    Energy Technology Data Exchange (ETDEWEB)

    Chacon R, A.; Hernandez V, R.; Hernandez D, V. M.; Vega C, H. R. [Universidad Autonoma de Zacatecas, Unidades Academicas de Estudios Nucleares e Ingenieria Electrica, Calle Cipres No. 10, Fracc. La Penuela, 09869 Zacatecas (Mexico); Ramirez G, J. [Instituto Nacional de Estadistica Geografia e Informatica, Direccion General de Innovacion y Tecnologia de Informacion, Av. Heroes de Nacozari Sur 2301, Fracc. Jardines del Parque, 20276 Aguascalientes (Mexico)], e-mail: achruiz@hotmail.com

    2009-10-15

    The radiation propagates in form of electromagnetic waves or corpuscular radiation; if the radiation energy causes ionization in environment that crosses it is considered ionizing radiation. To detect radiation several detectors types are used, if the radiation are alpha particles are used detectors proportional type or trace elements. In this work the design results, construction and tests of an alpha particles spectrometer are presented, which was designed starting from a photodiode PIN type. The system design was simulated with a code for electronic circuits. With results of simulation phase was constructed the electronic phase that is coupled to a multichannel analyzer. The resulting electronic is evaluated analyzing the electronic circuit performance before an alphas triple source and alpha radiation that produce two smoke detectors of domestic use. On the tests phase we find that the system allows obtain, in a multichannel, the pulses height spectrum, with which we calibrate the system. (Author)

  1. Spray coated indium-tin-oxide-free organic photodiodes with PEDOT:PSS anodes

    Energy Technology Data Exchange (ETDEWEB)

    Schmidt, Morten, E-mail: morten.schmidt@nano.ei.tum.de; Falco, Aniello; Loch, Marius; Lugli, Paolo; Scarpa, Giuseppe [Institute for Nanoelectronics, Technical University of Munich, Arcisstr. 21, 80333 Munich (Germany)

    2014-10-15

    In this paper we report on Indium Tin Oxide (ITO)-free spray coated organic photodiodes with an active layer consisting of a poly(3-hexylthiophen) (P3HT) and [6,6]-phenyl-C61-butyric acid methyl ester (PCBM) blend and patterned poly(3,4-ethylenedioxythiophene):poly(styrenesulfonate) (PEDOT:PSS) electrodes. External quantum efficiency and current voltage characteristics under illuminated and dark conditions as well as cut-off frequencies for devices with varying active and hole conducting layer thicknesses were measured in order to characterize the fabricated devices. 60% quantum efficiency as well as nearly four orders of magnitude on-off ratios have been achieved. Those values are comparable with standard ITO devices.

  2. Germanium-tin multiple quantum well on silicon avalanche photodiode for photodetection at two micron wavelength

    Science.gov (United States)

    Dong, Yuan; Wang, Wei; Lee, Shuh Ying; Lei, Dian; Gong, Xiao; Khai Loke, Wan; Yoon, Soon-Fatt; Liang, Gengchiau; Yeo, Yee-Chia

    2016-09-01

    We report the demonstration of a germanium-tin multiple quantum well (Ge0.9Sn0.1 MQW)-on-Si avalanche photodiode (APD) for light detection near the 2 μm wavelength range. The measured spectral response covers wavelengths from 1510 to 2003 nm. An optical responsivity of 0.33 A W‑1 is achieved at 2003 nm due to the internal avalanche gain. In addition, a thermal coefficient of breakdown voltage is extracted to be 0.053% K‑1 based on the temperature-dependent dark current measurement. As compared to the traditional 2 μm wavelength APDs, the Si-based APD is promising for its small excess noise factor, less stringent demand on temperature stability, and its compatibility with silicon technology.

  3. Characterization of total ionizing dose damage in COTS pinned photodiode CMOS image sensors

    Science.gov (United States)

    Wang, Zujun; Ma, Wuying; Huang, Shaoyan; Yao, Zhibin; Liu, Minbo; He, Baoping; Liu, Jing; Sheng, Jiangkun; Xue, Yuan

    2016-03-01

    The characterization of total ionizing dose (TID) damage in COTS pinned photodiode (PPD) CMOS image sensors (CISs) is investigated. The radiation experiments are carried out at a 60Co γ-ray source. The CISs are produced by 0.18-μm CMOS technology and the pixel architecture is 8T global shutter pixel with correlated double sampling (CDS) based on a 4T PPD front end. The parameters of CISs such as temporal domain, spatial domain, and spectral domain are measured at the CIS test system as the EMVA 1288 standard before and after irradiation. The dark current, random noise, dark signal non-uniformity (DSNU), photo response non-uniformity (PRNU), overall system gain, saturation output, dynamic range (DR), signal to noise ratio (SNR), quantum efficiency (QE), and responsivity versus the TID are reported. The behaviors of the tested CISs show remarkable degradations after radiation. The degradation mechanisms of CISs induced by TID damage are also analyzed.

  4. Application of PN and avalanche silicon photodiodes to low-level optical

    Science.gov (United States)

    Eppeldauer, G.; Schaefer, A. R.

    1988-01-01

    New approaches to the discovery of other planetary systems require very sensitive and stable detection techniques in order to succeed. Two methods in particular, the astrometric and the photometric methods, require this. To begin understanding the problems and limitations of solid state detectors regarding this application, preliminary experiments were performed at the National Bureau of Standards and a low light level detector characterization facility was built. This facility is briefly described, and the results of tests conducted in it are outlined. A breadboard photometer that was used to obtain stellar brightness ratio precision data is described. The design principles of PN and avalanche silicon photodiodes based on low light level measuring circuits are discussed.

  5. High-performance SWIR sensing from colloidal quantum dot photodiode arrays

    Science.gov (United States)

    Klem, Ethan; Lewis, Jay; Gregory, Chris; Cunningham, Garry; Temple, Dorota; D'Souza, Arvind; Robinson, Ernest; Wijewarnasuriya, P. S.; Dhar, Nibir

    2013-09-01

    RTI has demonstrated a novel photodiode technology based on IR-absorbing solution-processed PbS colloidal quantum dots (CQD) that can overcome the high cost, limited spectral response, and challenges in the reduction in pixel size associated with InGaAs focal plane arrays. The most significant advantage of the CQD technology is ease of fabrication. The devices can be fabricated directly onto the ROIC substrate at low temperatures compatible with CMOS, and arrays can be fabricated at wafer scale. Further, device performance is not expected to degrade significantly with reduced pixel size. We present results for upward-looking detectors fabricated on Si substrates with sensitivity from the UV to ~1.7 μm, compare these results to InGaAs detectors, and present measurements of the CQD detectors temperature dependent dark current.

  6. Damage Induced by Neutron Radiation on Output Characteristics of Solar Cells, Photodiodes, and Phototransistors

    Directory of Open Access Journals (Sweden)

    Biljana Simić

    2013-01-01

    Full Text Available This study investigates the effects of neutron radiation on I-V characteristics (current dependance on voltage of commercial optoelectronic devices (silicon photodiodes, phototransistors, and solar panels. Current-voltage characteristics of the samples were measured at room temperature before and after irradiation. The diodes were irradiated using Am-Be neutron source with neutron emission of 2.7×106 n/s. The results showed a decrease in photocurrent for all samples which could be due to the existence of neutron-induced displacement defects introduced into the semiconductor lattice. The process of annealing has also been observed. A comparative analysis of measurement results has been performed in order to determine the reliability of optoelectronic devices in radiation environments.

  7. Analysis of genetically modified organisms by pyrosequencing on a portable photodiode-based bioluminescence sequencer.

    Science.gov (United States)

    Song, Qinxin; Wei, Guijiang; Zhou, Guohua

    2014-07-01

    A portable bioluminescence analyser for detecting the DNA sequence of genetically modified organisms (GMOs) was developed by using a photodiode (PD) array. Pyrosequencing on eight genes (zSSIIb, Bt11 and Bt176 gene of genetically modified maize; Lectin, 35S-CTP4, CP4EPSPS, CaMV35S promoter and NOS terminator of the genetically modified Roundup ready soya) was successfully detected with this instrument. The corresponding limit of detection (LOD) was 0.01% with 35 PCR cycles. The maize and soya available from three different provenances in China were detected. The results indicate that pyrosequencing using the small size of the detector is a simple, inexpensive, and reliable way in a farm/field test of GMO analysis.

  8. p-Cu2O-shell/n-TiO2-nanowire-core heterostucture photodiodes

    Directory of Open Access Journals (Sweden)

    Hsueh Ting-Jen

    2011-01-01

    Full Text Available Abstract This study reports the deposition of cuprous oxide [Cu2O] onto titanium dioxide [TiO2] nanowires [NWs] prepared on TiO2/glass templates. The average length and average diameter of these thermally oxidized and evaporated TiO2 NWs are 0.1 to 0.4 μm and 30 to 100 nm, respectively. The deposited Cu2O fills gaps between the TiO2 NWs with good step coverage to form nanoshells surrounding the TiO2 cores. The p-Cu2O/n-TiO2 NW heterostructure exhibits a rectifying behavior with a sharp turn-on at approximately 0.9 V. Furthermore, the fabricated p-Cu2O-shell/n-TiO2-nanowire-core photodiodes exhibit reasonably large photocurrent-to-dark-current contrast ratios and fast responses.

  9. Hybrid Ant Colony Optimization for Real-World Delivery Problems Based on Real Time and Predicted Traffic in Wide Area Road Network

    Directory of Open Access Journals (Sweden)

    Junichi Ochiai

    2014-02-01

    Full Text Available This paper presents a solution to real-world delive ry problems for home delivery services where a large number of roads exist in cities and the tra ffic on the roads rapidly changes with time. The methodology for finding the shortest-travel-tim e tour includes a hybrid meta-heuristic that combines ant colony optimization with Dijkstra’s al gorithm, a search technique that uses both real-time traffic and predicted traffic, and a way to use a real-world road map and measured traffic in Japan. Experimental results using a map of central Tokyo and historical traffic data indicate that the proposed method can find a better solution than conventional methods.

  10. Dislocations as a Noise Source in LWIR HgCdTe Photodiodes

    Science.gov (United States)

    Jóźwikowski, Krzysztof; Jóźwikowska, Alina; Martyniuk, Andrzej

    2016-10-01

    The effect of dislocation on the 1/ f noise current in long-wavelength infrared (LWIR) reverse biased HgCdTe photodiodes working at liquid nitrogen (LN) temperature was analyzed theoretically by using a phenomenological model of dislocations as an additional Shockley-Read-Hall (SRH) generation-recombination (G-R) channel in heterostructure. Numerical analysis was involved to solve the set of transport equations in order to find a steady state values of physical parameters of the heterostructure. Next, the set of transport equations for fluctuations (TEFF) was formulated and solved to obtain the spectral densities (SD) of the fluctuations of electrical potential, quasi-Fermi levels, and temperature. The SD of mobility fluctuations, shot G-R noise, and thermal noise were also taken into account in TEFF. Additional expressions for SD of 1/ f fluctuations of the G-R processes were derived. Numerical values of the SD of noise current were compared with the experimental results of Johnson et al. Theoretical analysis has shown that the dislocations increase the G-R processes and this way cause the growth of G-R dark current. Despite the fact that dislocations increase both shot G-R noise and 1/ f G-R noise, the main cause of 1/ f current noise in LN cooled LWIR photodiodes are fluctuations of the carriers mobility determined by 1/ f fluctuations of relaxation times. As the noise current is proportional to the total diode current, growth of G-R dark current caused by dislocations leads to the growth of noise current.

  11. Linear mode photon counting with the noiseless gain HgCdTe e-avalanche photodiode

    Science.gov (United States)

    Beck, Jeffrey D.; Scritchfield, Richard; Mitra, Pradip; Sullivan, William W.; Gleckler, Anthony D.; Strittmatter, Robert; Martin, Robert J.

    2014-08-01

    A linear mode photon counting focal plane array using HgCdTe mid-wave infrared (MWIR) cutoff electron initiated avalanche photodiodes (e-APDs) has been designed, fabricated, and characterized. The broad spectral range (0.4 to 4.3 μm) is unique among photon counters, making this a "first of its kind" system spanning the visible to the MWIR. The low excess noise [F(M)≈1] of the e-APDs allows for robust photon detection while operating at a stable linear avalanche gain in the range of 500-1000. The readout integrated circuit (ROIC) design included a very high gain-bandwidth product resistive transimpedance amplifier (3×1013 Ω-Hz) and a 4 ns output digital pulse width comparator. The ROIC had 16 high-bandwidth analogs and 16 low-voltage differential signaling digital outputs. The 2×8 array was integrated into an LN2 Dewar with a custom leadless chip carrier and daughter board design that preserved high-bandwidth analog and digital signal integrity. The 2×8 e-APD arrays were fabricated on 4.3 μm cutoff HgCdTe and operated at 84 K. The measured dark currents were approximately 1 pA at 13 V bias where the measured avalanche photodiode gain was 500. This translates to a predicted dark current induced dark count rate of less than 20 KHz. Single photon detection was achieved with a photon pulse signal-to-noise ratio of 13.7 above the amplifier noise floor. A photon detection efficiency of 50% was measured at a photon background limited false event rate of about 1 MHz. The measured jitter was in the range of 550-800 ps. The demonstrated minimum time between distinguishable events was less than 10 ns.

  12. Cross-Species Hybridization with Fusarium verticillioides Microarrays Reveals New Insights into Fusarium fujikuroi Nitrogen Regulation and the Role of AreA and NMR

    Science.gov (United States)

    In filamentous fungi, the GATA-type transcription factor AreA plays a major role in transcriptional activation of genes needed to utilize poor nitrogen sources. Previously we have shown that in Fusarium fujikuroi AreA also controls genes involved in biosynthesis of nitrogen-free secondary metabolit...

  13. Hybrid intermediaries

    OpenAIRE

    Cetorelli, Nicola

    2014-01-01

    I introduce the concept of hybrid intermediaries: financial conglomerates that control a multiplicity of entity types active in the "assembly line" process of modern financial intermediation, a system that has become known as shadow banking. The complex bank holding companies of today are the best example of hybrid intermediaries, but I argue that financial firms from the "nonbank" space can just as easily evolve into conglomerates with similar organizational structure, thus acquiring the cap...

  14. 青岛地区国外油葵杂交种夏播比较试验%Contrast Test of Oil Sunflower Hybrids Introduced from Foreign Sown in Summer in Qingdao Areas

    Institute of Scientific and Technical Information of China (English)

    王瑞英; 黄婷婷; 刘炳禄; 盖红梅; 刘淑芹

    2011-01-01

    以澳大利亚油葵杂交种S31为对照,种植观察引自西班牙、印度的9个油葵杂交种的生育期、田间生育性状、产量及葵花籽性状.结果表明,引自印度的Surx Kiran与surgaKiran具有较高的葵花籽与籽仁产量,并且具有较好的田间表现与较短的生育期,因而可以在青岛地区夏播条件下进一步示范种植.%With S31, an oil sunflower hybrid introduced from Australia as the control, 9 oil sunflower hybrids from Spain and India were sown in summer to study the growth period, growth character in field, yield and achene character. The results showed that Surx Kiran and Surga Kiran introduced from India had higher a-chene and kernel yields, better field performance and shorter growth period. So they were suitable to sown in summer in Qingdao areas.

  15. Reliable solution processed planar perovskite hybrid solar cells with large-area uniformity by chloroform soaking and spin rinsing induced surface precipitation

    International Nuclear Information System (INIS)

    A solvent soaking and rinsing method, in which the solvent was allowed to soak all over the surface followed by a spinning for solvent draining, was found to produce perovskite layers with high uniformity on a centimeter scale and with much improved reliability. Besides the enhanced crystallinity and surface morphology due to the rinsing induced surface precipitation that constrains the grain growth underneath in the precursor films, large-area uniformity with film thickness determined exclusively by the rotational speed of rinsing spinning for solvent draining was observed. With chloroform as rinsing solvent, highly uniform and mirror-like perovskite layers of area as large as 8 cm × 8 cm were produced and highly uniform planar perovskite solar cells with power conversion efficiency of 10.6 ± 0.2% as well as much prolonged lifetime were obtained. The high uniformity and reliability observed with this solvent soaking and rinsing method were ascribed to the low viscosity of chloroform as well as its feasibility of mixing with the solvent used in the precursor solution. Moreover, since the surface precipitation forms before the solvent draining, this solvent soaking and rinsing method may be adapted to spinless process and be compatible with large-area and continuous production. With the large-area uniformity and reliability for the resultant perovskite layers, this chloroform soaking and rinsing approach may thus be promising for the mass production and commercialization of large-area perovskite solar cells

  16. Hybrid artificial intelligence approach based on neural fuzzy inference model and metaheuristic optimization for flood susceptibilitgy modeling in a high-frequency tropical cyclone area using GIS

    Science.gov (United States)

    Tien Bui, Dieu; Pradhan, Biswajeet; Nampak, Haleh; Bui, Quang-Thanh; Tran, Quynh-An; Nguyen, Quoc-Phi

    2016-09-01

    This paper proposes a new artificial intelligence approach based on neural fuzzy inference system and metaheuristic optimization for flood susceptibility modeling, namely MONF. In the new approach, the neural fuzzy inference system was used to create an initial flood susceptibility model and then the model was optimized using two metaheuristic algorithms, Evolutionary Genetic and Particle Swarm Optimization. A high-frequency tropical cyclone area of the Tuong Duong district in Central Vietnam was used as a case study. First, a GIS database for the study area was constructed. The database that includes 76 historical flood inundated areas and ten flood influencing factors was used to develop and validate the proposed model. Root Mean Square Error (RMSE), Mean Absolute Error (MAE), Receiver Operating Characteristic (ROC) curve, and area under the ROC curve (AUC) were used to assess the model performance and its prediction capability. Experimental results showed that the proposed model has high performance on both the training (RMSE = 0.306, MAE = 0.094, AUC = 0.962) and validation dataset (RMSE = 0.362, MAE = 0.130, AUC = 0.911). The usability of the proposed model was evaluated by comparing with those obtained from state-of-the art benchmark soft computing techniques such as J48 Decision Tree, Random Forest, Multi-layer Perceptron Neural Network, Support Vector Machine, and Adaptive Neuro Fuzzy Inference System. The results show that the proposed MONF model outperforms the above benchmark models; we conclude that the MONF model is a new alternative tool that should be used in flood susceptibility mapping. The result in this study is useful for planners and decision makers for sustainable management of flood-prone areas.

  17. Hybride betongkonstruksjoner

    OpenAIRE

    Bjerve, Tor Øystein

    2010-01-01

    Denne oppgaven tar for seg beregning og testing av hybride betongkonstruksjoner. Den inneholder også beskrivelse av materialtester. Bjelkene som testes er tenkt å være utsnitt av dekkekonstruksjoner. Konstruksjonene skal bestå av et lag fiberarmert lettbetong, som er tenkt å opptre som en prefabrikert betongforskaling, samt en påstøp som kan fungere som ferdig gulv.I teoridelen av oppgaven er det sett på utfordringer og fordeler ved å benytte hybride konstruksjoner. I tillegg er beregningsvei...

  18. InAs/InAsSb Avalanche Photodiode (APD) for applicaions in long-wavelength infrared region

    Institute of Scientific and Technical Information of China (English)

    P.K.Maurya; H.Agarwal; A.Singh; P.Chakrabarti

    2008-01-01

    A generic numerical model of a long-wavelength Avalanche Photodiode (APD) based on narrow bandgap semiconductor InAsSb on lnAs substrate is reported for the first time. This model has been applied for theoretical characterization of a proposed N+ InAS/P-InAsSb avalanche photodiode structure for possible application in 2-5 μm wavelength region. The parameters such as gain, excess noise factor and their trade-offwith variation of doping concentration and bias voltage have been estimated for the APD taking into account history-dependent theory of avalanche multiplication process. The LWIR APD is expected to find application in optical gas sensor and in future generation of optical communication system.

  19. Wavelength-selective ultraviolet (Mg,Zn)O photodiodes: Tuning of parallel composition gradients with oxygen pressure

    Science.gov (United States)

    Zhang, Zhipeng; von Wenckstern, Holger; Lenzner, Jörg; Grundmann, Marius

    2016-06-01

    We report on ultraviolet photodiodes with integrated optical filter based on the wurtzite (Mg,Zn)O thin films. Tuning of the bandgap of filter and active layers was realized by employing a continuous composition spread approach relying on the ablation of a single segmented target in pulsed-laser deposition. Filter and active layers of the device were deposited on opposite sides of a sapphire substrate with nearly parallel compositional gradients. Ensure that for each sample position the bandgap of the filter layer blocking the high energy radiation is higher than that of the active layer. Different oxygen pressures during the two depositions runs. The absorption edge is tuned over 360 meV and the spectral bandwidth of photodiodes is typically 100 meV and as low as 50 meV.

  20. A test beam set-up for the characterization of the Geiger-mode avalanche photodiode technology for particle tracking

    CERN Document Server

    Vilella, A; Trenado, J; Vila, A; Casanova, R; Vos, M; Garrido, L; Dieguez, A

    2012-01-01

    It is well known that avalanche photodiodes operated in the Geiger mode above the breakdown voltage offer a virtually infinite gain and time accuracy in the picosecond range that can be used for single photon detection. However, their performance in particle detection still remains unexplored. In this contribution, we are going to expose different steps that we have taken in order to prove the efficiency of the Geiger mode avalanche photodiodes in the aforementioned field. In particular, we will present a setup for the characterization of these sensors in a test beam. The expected results of the test beam at DESY and CERN have been simulated with Geant4 and will also be exposed.

  1. A PMT-like high gain avalanche photodiode based on GaN/AlN periodical stacked structure

    CERN Document Server

    Zheng, Ji-yuan; Yang, Di; Yu, Jia-dong; Meng, Xiao; E, Yan-xiong; Wu, Chao; Hao, Zhi-biao; Sun, Chang-zheng; Xiong, Bing; Luo, Yi; Han, Yan-jian; Wang, Jian; Li, Hong-tao; Brault, Julien; Matta, Samuel; Khalfioui, Mohamed Al; Yan, Jian-chang; Wei, Tong-bo; Zhang, Yun; Wang, Jun-xi

    2016-01-01

    Avalanche photodiode (APD) has been intensively investigated as a promising candidate to replace photomultiplier tubes (PMT) for weak light detection. However, in conventional APDs, a large portion of carrier energy drawn from the electric field is thermalized, and the multiplication efficiencies of electron and hole are low and close. In order to achieve high gain, the device should work under breakdown bias, where carrier multiplication proceeds bi-directionally to form a positive feedback multiplication circle. However, breakdown is hard to control, in practice, APDs should work under Geiger mode as a compromise between sustainable detection and high gain. The complexity of system seriously restricts the application. Here, we demonstrate an avalanche photodiode holding high gain without breakdown, which means no quenching circuit is needed for sustainable detection. The device is based on a GaN/AlN periodically-stacked-structure (PSS), wherein electron holds much higher efficiency than hole to draw energy ...

  2. Dark-current characteristics of GaN-based UV avalanche photodiodes

    Science.gov (United States)

    Xu, Jintong; Chang, Chao; Li, Xiangyang

    2015-04-01

    For UV detecting, it needs high ratio of signal to noise, which means high responsibility and low noise. GaN-based avalanche photodiodes can provide a high internal photocurrent gain. In this paper, we report the testing and characterization of GaN based thin film materials, optimization design of device structure, the device etching and passivation technology, and the photoelectric characteristics of the devices. Also, uniformity of the device was obtained. The relationship between dark current and material quality or device processes was the focus of this study. GaN based material with high aluminum components have high density defects. Scanning electron microscope, cathodoluminescence spectra, X-ray double crystal diffraction and transmission spectroscopy testing were employed to evaluate the quality of GaN-based material. It shows that patterned sapphire substrate or thick AlN buffer layer is more effective to get high quality materials. GaN-based materials have larger hole ionization coefficient, so back incident structure were adopted to maximize the hole-derived multiplication course and it was helped to get a smaller multiplication noise. The device with separate absorption and multiplication regions is also prospective to reduce the avalanche noise. According to AlGaN based material characteristics and actual device fabrication, device structure was optimized further. Low physical damage inductively coupled plasma (ICP) etching method was used to etch mesa and wet etching method was employed to treat mesa damage. Silica is passivation material of device mesa. For solar-blind ultraviolet device, it is necessary to adopt a wider bandgap material than AlGaN material. The current-voltage characteristics under reverse bias were measured in darkness and under UV illumination. The distribution of dark current and response of different devices was obtained. In short, for GaN-based UV avalanche photodiode, dark current was related to high density dislocation of

  3. Development of novel technologies to enhance performance and reliability of III-Nitride avalanche photodiodes

    Science.gov (United States)

    Suvarna, Puneet Harischandra

    Solar-blind ultraviolet avalanche photodiodes are an enabling technology for applications in the fields of astronomy, communication, missile warning systems, biological agent detection and particle physics research. Avalanche photodiodes (APDs) are capable of detecting low-intensity light with high quantum efficiency and signal-to-noise ratio without the need for external amplification. The properties of III-N materials (GaN and AlGaN) are promising for UV photodetectors that are highly efficient, radiation-hard and capable of visible-blind or solar-blind operation without the need for external filters. However, the realization of reliable and high performance III-N APDs and imaging arrays has several technological challenges. The high price and lack of availability of bulk III-N substrates necessitates the growth of III-Ns on lattice mismatched substrates leading to a high density of dislocations in the material that can cause high leakage currents, noise and premature breakdown in APDs. The etched sidewalls of III-N APDs and high electric fields at contact edges are also detrimental to APD performance and reliability. In this work, novel technologies have been developed and implemented that address the issues of performance and reliability in III-Nitride based APDs. To address the issue of extended defects in the bulk of the material, a novel pulsed MOCVD process was developed for the growth of AlGaN. This process enables growth of high crystal quality AlxGa1-xN with excellent control over composition, doping and thickness. The process has also been adapted for the growth of high quality III-N materials on silicon substrate for devices such as high electron mobility transistors (HEMTs). A novel post-growth defect isolation technique is also discussed that can isolate the impact of conductive defects from devices. A new sidewall passivation technique using atomic layer deposition (ALD) of dielectric materials was developed for III-N APDs that is effective in

  4. Low area 4-bit 5 MS/s flash-type digitizer for hybrid-pixel detectors - Design study in 180 nm and 40 nm CMOS

    Science.gov (United States)

    Otfinowski, Piotr; Grybos, Pawel

    2015-11-01

    We report on the design of a 4-bit flash ADC with dynamic offset correction dedicated to measurement systems based on a pixel architecture. The presented converter was manufactured in two CMOS technologies: widespread and economical 180 nm and modern 40 nm process. The designs are optimized for the lowest area occupancy resulting in chip areas of 160×55 μm2 and 35×25 μm2. The experimental results indicate integral nonlinearity of +0.35/-0.21 LSB and +0.28/-0.25 LSB and power consumption of 52 μW and 17 μW at 5 MS/s for the prototypes in 180 nm and 40 nm technologies respectively.

  5. Evaluating photovoltaic/energy storage/diesel hybrid power systems for remote area power supplies in the Amazon region of Peru

    International Nuclear Information System (INIS)

    In June 1997, an international memorandum of understanding was signed between the Ministry of Energy and Mines (MEM) in Peru, the Solar Energy Industries Association (SEIA) and the International Lead Zinc Research Organization (ILZRO). This agreement seeks to evaluate the potential for remote area power supplies (RAPS) for electrification of rural villages in the Amazon region. This study, funded by ILZRO, was the first major activity conducted under the aegis of this agreement. The objective of this study was to conduct a preliminary engineering design and feasibility study to assess the potential for Remote Area Power Supplies (RAPS) in the Amazon Region of Peru. This paper presents the results of this preliminary engineering study. (author)

  6. Thermal imager based on the array light sensor device of 128×128 CdHgTe-photodiodes

    OpenAIRE

    Reva V. P.; Golenkov A. G.; Zabudskiy V. V.; Korinets S. V.; Tsybriy Z. F.; Gumenjuk-Sichevska J. V.; Bunchuk S. G.; Apatskaya M. V.; Lysiuk I. А.; Smoliy М. I.

    2010-01-01

    The results of investigation of developed thermal imager for middle (3—5 µm) infrared region are presented and its applications features are discussed. The thermal imager consists of cooled to 80 K 128×128 diodes focal plane array on the base of cadmium–mercury–telluride compound and cryostat with temperature checking system. The photodiode array is bonded with readout device (silicon focal processor) via indium microcontacts. The measured average value of noise equivalent temperature differe...

  7. Simultaneous determination of 20 food additives by high performance liquid chromatography with photo-diode array detector

    Institute of Scientific and Technical Information of China (English)

    Kang Ma; Ya Nan Yang; Xiao Xiong Jiang; Min Zhao; Ye Qiang Cai

    2012-01-01

    An efficient and accurate analytical method was developed for the simultaneous determination of 20 synthetic food additives,including three sweeteners,seven food colorants,nine synthetic preservatives and caffeine,by high performance liquid chromatography (HPLC) with photodiode array detector (PDA).This method permits the detection of food additives at very low concentrations (0.005-0.150 μg/mL).The applicability was verified by the determination of food additives present in various foodstuffs.

  8. 不同地区种植的‘张杂谷6号’营养成分差异分析%Differences Analysis of Nutritional Components in Different Planting Areas of Hybrid Millet-6

    Institute of Scientific and Technical Information of China (English)

    李珊珊; 张爱霞; 王桂荣; 邱风仓; 张新仕; 王慧军

    2012-01-01

    为了探究优质谷子生产区域,立足指导区域生产工作,以‘张杂谷6号’为材料,采用规范化标准实验法将其种植于宁夏固原、内蒙古赤峰、甘肃秦安、河北张家口4个春谷区域,并用营养检测国标法对其样品的营养物质进行测定与分析,研究各营养成分差异的原因及品质.结果表明,‘张杂谷6号’的蛋白质、脂肪、水分、灰分、粗纤维、矿物质、碳水化合物含量皆因地区气候、土壤等差异而呈现显著差异(P<0.05).与其他谷物比较研究结果表明,‘张杂谷6号’矿物质含量普遍高于玉米、小麦、大米,其中以铁(8.11 mg/100 g)、镁(111.41 mg/100 g)、硒(0.10 mg/1 00 g)、锌(2.87 mg/100 g)含量最为丰富.‘张杂谷6号’营养较丰富,各营养成分因种植区域等差异而呈现显著差异,其中内蒙古赤峰、宁夏固原地区作为区域定位较适宜其种植及品种推广.%In order to explore the high quality millet production area, based on the guidance of the working in production area, for samples with hybrid millet-6, it had been planted for standardization in Guyuan (Ningxia Province), Chifeng (Inner Mongolia), Qin'an (Gansu Province), Zhangjiakou (Hebei Province) these four spring millet area. Results showed that, protein, fat, moisture, ash, crude fiber, mineral and carbohydrate contents present significant differences by reasons about the situation of climates and soil in different areas (P<0.05). The comparative study on other grains showed that, mineral content of hybrid millet-6 was generally higher than corn, wheat and rice, especially iron (8.11 mg/100 g), magnesium (111.41 mg/100 g), selenium (0.10 mg/100 g) and zinc (2.87 mg/100 g) was the most abundant in it. Hybrid millet-6 was rich of nutrition, various kinds of nutrients significant differences reason for the differences of planting areas, Guyuan (Ningxia Province) and Chifeng (Inner Mongolia) was suitable for planting it, and suitable

  9. Radiation hardness investigation of avalanche photodiodes for the Projectile Spectator Detector readout at the Compressed Baryonic Matter experiment

    International Nuclear Information System (INIS)

    In this paper, we discuss results of avalanche photodiodes radiation tests for Projectile Spectator Detector at future Compressed Baryonic Matter experiment. The tests were carried out in Nuclear Physics Institute of ASCR in Řež using the cyclotron facility. Secondary neutron beam was used for irradiation because the main radiation damage in the Projectile Spectator Detector is caused by neutrons. Two types of the avalanche photodiodes from Zecotek and Ketek manufacturers were investigated. Special attention was given to the noise investigation and self-annealing after the irradiation. We have irradiated two Ketek PM3375 diodes with equivalent dose for 1 MeV neutrons equal to 2.5±0.2×1012 n/cm2, and single Zecotek MAPD-3N diode with equivalent dose for 1 MeV neutrons equal to 3.4±0.2×1012 n/cm2. All the types of the diodes have shown an increasing level of the noise after the irradiation. From that we can conclude that those avalanche photodiodes are not able to detect single photons anymore due to high noise levels

  10. Gamma-ray detection with an UV-enhanced photodiode and scintillation crystals emitting at short wavelengths

    Energy Technology Data Exchange (ETDEWEB)

    Johansen, G.A. [Bergen Univ. (Norway). Dept. of Phys., Appl. Phys. and Technol.; Froeyen, S. [Bergen Univ. (Norway). Dept. of Phys., Appl. Phys. and Technol.; Hansen, T.-E. [A/S Microelectronics (AME), Horten (Norway)

    1997-03-01

    A low-noise ion implanted photodiode with high spectral response in the deep blue/UV region has been tested as read-out device for scintillation crystals with matching emission spectra (YAP(Ce), GSO(Ce), BGO and CsI(Tl)). This gamma-ray detector concept is attractive in many industrial applications where compactness, reliability and ambient temperature operation are important. The results show that the amount of detected scintillation light energy falls rapidly off as the wavelength of the scintillation light decreases. It is concluded that the dynamic spectral response of the photodiode, due to increasing carrier collection times, is considerably less than the DC response at short wavelengths. The diode is not useful in pulse mode operation with scintillation crystals emitting at wavelengths below about 400 nm. For read-out of CsI(Tl) with 661.6 keV gamma-radiation, however, the photodiode concept shows better energy resolution (7.1%) than other detectors. (orig.).

  11. Gamma-ray detection with an UV-enhanced photodiode and scintillation crystals emitting at short wavelengths

    International Nuclear Information System (INIS)

    A low-noise ion implanted photodiode with high spectral response in the deep blue/UV region has been tested as read-out device for scintillation crystals with matching emission spectra (YAP(Ce), GSO(Ce), BGO and CsI(Tl)). This gamma-ray detector concept is attractive in many industrial applications where compactness, reliability and ambient temperature operation are important. The results show that the amount of detected scintillation light energy falls rapidly off as the wavelength of the scintillation light decreases. It is concluded that the dynamic spectral response of the photodiode, due to increasing carrier collection times, is considerably less than the DC response at short wavelengths. The diode is not useful in pulse mode operation with scintillation crystals emitting at wavelengths below about 400 nm. For read-out of CsI(Tl) with 661.6 keV gamma-radiation, however, the photodiode concept shows better energy resolution (7.1%) than other detectors. (orig.)

  12. Hybrid Qualifications

    DEFF Research Database (Denmark)

    has turned out as a major focus of European education and training policies and certainly is a crucial principle underlying the European Qualifications Framework (EQF). In this context, «hybrid qualifications» (HQ) may be seen as an interesting approach to tackle these challenges as they serve «two...

  13. High-speed bridge circuit for InGaAs avalanche photodiode single-photon detector

    Science.gov (United States)

    Hashimoto, Hirofumi; Tomita, Akihisa; Okamoto, Atsushi

    2014-02-01

    Because of low power consumption and small footprint, avalanche photodiodes (APD) have been commonly applied to photon detection. Recently, high speed quantum communication has been demonstrated for high bit-rate quantum key distribution. For the high speed quantum communication, photon detectors should operate at GHz-clock frequencies. We propose balanced detection circuits for GHz-clock operation of InGaAs-APD photon detectors. The balanced single photon detector operates with sinusoidal wave gating. The sinusoidal wave appearing in the output is removed by the subtraction from APD signal without sharp band-elimination filters. Omission of the sharp filters removes the constraint on the operating frequency of the single photon detector. We present two designs, one works with two identical APDs, the other with one APD and a low-pass filter. The sinusoidal gating enables to eliminate the gating noise even with the simple configuration of the latter design. We demonstrated the balanced single photon detector operating with 1.020GHz clock at 233 K, 193 K, and 186.5 K. The dark count probability was 4.0 x 10-4 counts/pulse with the quantum efficiency of 10% at 233K, and 1.6 x 10-4 counts/pulse at 186.5 K. These results were obtained with easily available APDs (NR8300FP-C.C, RENESASS) originally developed for optical time-domain reflectmeters.

  14. Update on Linear Mode Photon Counting with the HgCdTe Linear Mode Avalanche Photodiode

    Science.gov (United States)

    Beck, Jeffrey D.; Kinch, Mike; Sun, Xiaoli

    2014-01-01

    The behavior of the gain-voltage characteristic of the mid-wavelength infrared cutoff HgCdTe linear mode avalanche photodiode (e-APD) is discussed both experimentally and theoretically as a function of the width of the multiplication region. Data are shown that demonstrate a strong dependence of the gain at a given bias voltage on the width of the n- gain region. Geometrical and fundamental theoretical models are examined to explain this behavior. The geometrical model takes into account the gain-dependent optical fill factor of the cylindrical APD. The theoretical model is based on the ballistic ionization model being developed for the HgCdTe APD. It is concluded that the fundamental theoretical explanation is the dominant effect. A model is developed that combines both the geometrical and fundamental effects. The model also takes into account the effect of the varying multiplication width in the low bias region of the gain-voltage curve. It is concluded that the lower than expected gain seen in the first 2 × 8 HgCdTe linear mode photon counting APD arrays, and higher excess noise factor, was very likely due to the larger than typical multiplication region length in the photon counting APD pixel design. The implications of these effects on device photon counting performance are discussed.

  15. High-speed detection at two micrometres with monolithic silicon photodiodes

    Science.gov (United States)

    Ackert, Jason J.; Thomson, David J.; Shen, Li; Peacock, Anna C.; Jessop, Paul E.; Reed, Graham T.; Mashanovich, Goran Z.; Knights, Andrew P.

    2015-06-01

    With continued steep growth in the volume of data transmitted over optical networks there is a widely recognized need for more sophisticated photonics technologies to forestall a ‘capacity crunch’. A promising solution is to open new spectral regions at wavelengths near 2 μm and to exploit the long-wavelength transmission and amplification capabilities of hollow-core photonic-bandgap fibres and the recently available thulium-doped fibre amplifiers. To date, photodetector devices for this window have largely relied on III-V materials or, where the benefits of integration with silicon photonics are sought, GeSn alloys, which have been demonstrated thus far with only limited utility. Here, we describe a silicon photodiode operating at 20 Gbit s-1 in this wavelength region. The detector is compatible with standard silicon processing and is integrated directly with silicon-on-insulator waveguides, which suggests future utility in silicon-based mid-infrared integrated optics for applications in communications.

  16. Radiation Detection Measurements with a New 'Buried Junction' Silicon Avalanche Photodiode

    CERN Document Server

    Lecomte, R; Rouleau, D; Dautet, H; McIntyre, R J; McSween, D; Webb, P

    1999-01-01

    An improved version of a recently developed 'Buried Junction' avalanche photodiode (APD), designed for use with scintillators, is described and characterized. This device, also called the 'Reverse APD', is designed to have a wide depletion layer and thus low capacitance, but to have high gain only for e-h pairs generated within the first few microns of the depletion layer. Thus it has high gain for light from scintillators emitting in the 400-600 nm range, with relatively low dark current noise and it is relatively insensitive to minimum ionizing particles (MIPs). An additional feature is that the metallurgical junction is at the back of the wafer, leaving the front surface free to be coupled to a scintillator without fear of junction contamination. The modifications made in this device, as compared with the earlier diode, have resulted in a lower excess noise factor, lower dark current, and much-reduced trapping. The electrical and optical characteristics of this device are described and measurements of ener...

  17. Photodiode Based on CdO Thin Films as Electron Transport Layer

    Science.gov (United States)

    Soylu, M.; Kader, H. S.

    2016-08-01

    Cadmium oxide (CdO) thin films were synthesized by the sol-gel method. The films were analyzed by means of XRD, AFM, and UV/Vis spectrophotometry. X-ray diffraction patterns confirm that the films are formed from CdO with cubic crystal structure and consist of nano-particles. The energy gap of the prepared film was found to be 2.29 eV. The current-voltage (I-V) characteristics of the CdO/p-Si heterojunction were examined in the dark and under different illumination intensities. The heterojunction showed high rectifying behavior and a strong photoresponse. Main electrical parameters of the photodiode such as series and shunt resistances (R s and R sh), saturation current I 0, and photocurrent I ph, were extracted considering a single diode equivalent circuit of a photovoltaic cell. Results indicate that the application of CdO thin films as an electron transport layer on p-Si acts as a photodetector in the field of the UV/visible.

  18. Single-Photon-Sensitive HgCdTe Avalanche Photodiode Detector

    Science.gov (United States)

    Huntington, Andrew

    2013-01-01

    The purpose of this program was to develop single-photon-sensitive short-wavelength infrared (SWIR) and mid-wavelength infrared (MWIR) avalanche photodiode (APD) receivers based on linear-mode HgCdTe APDs, for application by NASA in light detection and ranging (lidar) sensors. Linear-mode photon-counting APDs are desired for lidar because they have a shorter pixel dead time than Geiger APDs, and can detect sequential pulse returns from multiple objects that are closely spaced in range. Linear-mode APDs can also measure photon number, which Geiger APDs cannot, adding an extra dimension to lidar scene data for multi-photon returns. High-gain APDs with low multiplication noise are required for efficient linear-mode detection of single photons because of APD gain statistics -- a low-excess-noise APD will generate detectible current pulses from single photon input at a much higher rate of occurrence than will a noisy APD operated at the same average gain. MWIR and LWIR electron-avalanche HgCdTe APDs have been shown to operate in linear mode at high average avalanche gain (M > 1000) without excess multiplication noise (F = 1), and are therefore very good candidates for linear-mode photon counting. However, detectors fashioned from these narrow-bandgap alloys require aggressive cooling to control thermal dark current. Wider-bandgap SWIR HgCdTe APDs were investigated in this program as a strategy to reduce detector cooling requirements.

  19. Relative calibration of photodiodes in the soft-x-ray spectral range

    International Nuclear Information System (INIS)

    A method of obtaining a relative calibration of Si photodiodes for the spectral range of soft x rays (1--30 keV) is presented. A simple mathematical model of the p-n diode is adopted which allows the response to be described in terms of a small set of parameters. The diffusion length as well as the thickness of a dead layer below the front surface of the diodes are obtained from measurements of angular dependences of the photoinduced current. It is shown that a precise characterization of the diode response and an accurate relative calibration can be obtained using this method. However, it was found that the presence of a dead layer a few tenths of a micrometer thick can pose severe restrictions on the use of planar diode arrays in x-ray tomography systems where uniformity of response is crucial. The method has been applied to the diode arrays equipping the x-ray tomography system built for the TCV tokamak, a magnetic fusion research device. copyright 1995 American Institute of Physics

  20. Measurement of bunch length in Indus-1 storage ring using fast photodiode

    Energy Technology Data Exchange (ETDEWEB)

    Garg, Akash Deep; Nathwani, R. K.; Holikatti, A. C.; Kumar Karnewar, Akhilesh; Tyagi, Y.; Yadav, S.; Puntambekar, T. A.; Navathe, C. P. [Beam Diagnostics Section, Raja Ramanna Centre for Advanced Technology, Indore 452013 (India)

    2012-11-15

    The length of electron bunches in a storage ring is an important parameter for both synchrotron radiation users and accelerator physicists. Several methods are used for measurements of bunch length using electronic and optical instruments. We have measured temporal profile of synchrotron radiation emitted from dipole magnet of Indus-1 by using fast photodiode. Bunch length is calculated by assuming gaussian profile for the particles inside bunch. The results show that bunch length is increasing with the decrease of gap voltage of RF cavity. These measurements were carried out at low beam current; at high voltage results are in close agreement with theory and the values estimated using ZAP code. In the second experiment, the results show that bunch length increases with the increase of beam current inside the bunch, and above threshold current, it follows Chao-Gareyte scaling law. The longitudinal broadband impedance for Indus-1 SRS was estimated using Keil-Schnell criterion and results were compared with theoretical estimated values using ZAP code.

  1. A bismuth germanate-avalanche photodiode module designed for use in high resolution positron emission tomography

    International Nuclear Information System (INIS)

    A light-tight, hermetically sealed module for use in high resolution positron emission tomography systems is described. The module has external dimensions 3.8 x 13.2 x 33 mm and contains two 3 x 5 x 20 Bismuth Germanate (BGO) scintillators, each with its own 3 x 3 mm silicon avalanche photodiode. When stacked, the vertical packing fraction is 80%. As measured with a 137Cs (662 keV) source, the typical energy resolution is 20% at 220C, reducing to 16% at 00C. The single detector time resolution for the 22Na gamma at 511 keV is typically less 20 ns at 220C, reducing to less than 15 ns at 00C. Further cooling does not improve the performance since the emission time of light from BGO increases at lower temperature. Preliminary results with Gadolinium Orthosilicate show similar energy resolution, better timing resolution (under 10 ns), but as is known, a slightly poorer photofraction and stopping power

  2. Ultrafast dual-drifting layer uni-traveling carrier photodiode with high saturation current.

    Science.gov (United States)

    Li, Jin; Xiong, Bing; Luo, Yi; Sun, Changzheng; Wang, Jian; Hao, Zhibiao; Han, Yanjun; Wang, Lai; Li, Hongtao

    2016-04-18

    A novel backside-illuminated mesa-structure dual-drifting layer (DDL) uni-traveling-carrier photodiode (UTC-PD) is reported to demonstrate high-power performance at sub-THz frequencies. The DDL structure consists of a velocity overshoot layer and a velocity saturation layer, formed by inserting a 20 nm p-type cliff layer into the thick depletion region. In the overshoot layer, photo-generated electrons drift at overshoot velocity under the carefully designed electric field profile, thus resulting in a short electron transit time. The saturation layer serves as a voltage sacrificing layer to enable high bias voltage operation, which leads to alleviated load voltage swing effect, as well as improved saturation performance. Our DDL UTC-PD exhibits a 3-dB bandwidth of 106 GHz with a responsivity of 0.17 A/W under a wide bias voltage range from 4 to 8 V. The photocurrent reaches up to 28 mA, corresponding to an output power of 7.3 dBm at 105 GHz. PMID:27137280

  3. Characterization of GaAs mesa photodiodes with X-ray and γ-ray photons

    Energy Technology Data Exchange (ETDEWEB)

    Barnett, A.M., E-mail: a.barnett@sussex.ac.uk

    2014-08-21

    Results characterizing the performance of prototype thin (3 µm i layer) GaAs p{sup +}–i–n{sup +} mesa photodiodes (one 200 µm diameter and one 400 µm diameter device) are presented showing the spectral performance of the devices at photon energies from 4.95 keV (V Kα{sub 1} X-ray fluorescence) to 59.5 keV ({sup 241}Am γ-ray emission). The devices were operated uncooled at +33.3 °C. The energy resolution (full width half maximum) was measured to vary from 780 eV at 4.95 keV to 950 eV at 59.5 keV for the 200 µm diameter diode, and from 1.08 keV at 4.95 keV to 1.33 keV at 59.5 keV for the 400 µm diameter diode. The increased broadening of FWHM with increasing photon energy was found to be greater than can be explained by the expected energy dependence of the Fano noise, but the peak charge output from the devices varied linearly (R{sup 2}{sub 200} {sub µm}=0.99998, R{sup 2}{sub 400} {sub µm}=0.999998) with incident photon energy.

  4. Characterization of total ionizing dose damage in COTS pinned photodiode CMOS image sensors

    Directory of Open Access Journals (Sweden)

    Zujun Wang

    2016-03-01

    Full Text Available The characterization of total ionizing dose (TID damage in COTS pinned photodiode (PPD CMOS image sensors (CISs is investigated. The radiation experiments are carried out at a 60Co γ-ray source. The CISs are produced by 0.18-μm CMOS technology and the pixel architecture is 8T global shutter pixel with correlated double sampling (CDS based on a 4T PPD front end. The parameters of CISs such as temporal domain, spatial domain, and spectral domain are measured at the CIS test system as the EMVA 1288 standard before and after irradiation. The dark current, random noise, dark signal non-uniformity (DSNU, photo response non-uniformity (PRNU, overall system gain, saturation output, dynamic range (DR, signal to noise ratio (SNR, quantum efficiency (QE, and responsivity versus the TID are reported. The behaviors of the tested CISs show remarkable degradations after radiation. The degradation mechanisms of CISs induced by TID damage are also analyzed.

  5. Photodiode Based on CdO Thin Films as Electron Transport Layer

    Science.gov (United States)

    Soylu, M.; Kader, H. S.

    2016-11-01

    Cadmium oxide (CdO) thin films were synthesized by the sol-gel method. The films were analyzed by means of XRD, AFM, and UV/Vis spectrophotometry. X-ray diffraction patterns confirm that the films are formed from CdO with cubic crystal structure and consist of nano-particles. The energy gap of the prepared film was found to be 2.29 eV. The current-voltage ( I- V) characteristics of the CdO/ p-Si heterojunction were examined in the dark and under different illumination intensities. The heterojunction showed high rectifying behavior and a strong photoresponse. Main electrical parameters of the photodiode such as series and shunt resistances ( R s and R sh), saturation current I 0, and photocurrent I ph, were extracted considering a single diode equivalent circuit of a photovoltaic cell. Results indicate that the application of CdO thin films as an electron transport layer on p-Si acts as a photodetector in the field of the UV/visible.

  6. Progress in the use of avalanche photodiodes for readout for calorimeters

    International Nuclear Information System (INIS)

    During the past year the Superconducting Super Collider Tracking Group has progressed from acquisition of its first avalanche photodiode (APD) to installation of a 96-channel array of the devices. The work was motivated by the desire to learn how to use APDs as the sensitive elements in a fiber tracking detector, moderated by the presence of limited resources and the absence of activity within groups outside the SSC Laboratory on such a project. We chose, therefore, to team up with an ongoing research effort which intended to evaluate both pre-shower and shower-maximum detectors and various means of sensing the light produced. The pre-shower detector is made of layers of scintillating fibers similar to a fiber tracker. The shower-maximum detector uses optical fibers to transmit the light from scintillating plates to the readout devices. Our contribution has been to develop the APD array for use in this test from concept to operation. Currently, the equipment is installed in Fermilab's MP beamline awaiting delivery to the final 36 APDs and exposure to the beam. 9 refs., 18 figs

  7. Optoelectronic characterization of Au/Ni/n-AlGaN photodiodes after annealing at different temperatures

    Energy Technology Data Exchange (ETDEWEB)

    Ngoepe, P.N.M., E-mail: phuti.ngoepe@up.ac.za [Department of Physics, University of Pretoria, Pretoria 0002 (South Africa); Meyer, W.E.; Diale, M.; Auret, F.D.; Schalkwyk, L. van [Department of Physics, University of Pretoria, Pretoria 0002 (South Africa)

    2012-05-15

    The optoelectronic characteristics of Ni/Au Schottky photodiodes based on Al{sub 0.35}Ga{sub 0.65}N were investigated. The transmission of the Ni (50 A)/Au (50 A) layer was determined by evaporating it on a quartz substrate. As evaporated, the transmission coefficient in the 200-350 nm wavelength range was found to be 43 to 48%. Annealing at temperatures of up to 400 Degree-Sign C did not influence the transmission coefficient. After annealing at 500 Degree-Sign C, the transmission coefficient increased from 50 to 68% over the 200-350 nm range. The reverse bias current was optimised in terms of annealing temperature and was found to be as low as 1.94 Multiplication-Sign 10{sup -13} A after annealing at 400 Degree-Sign C for a 0.6 mm diameter contact. The Schottky barrier heights increased with annealing temperature reaching as high as 1.46 and 1.89 eV for I-V and C-V measurements, respectively. The quantum efficiency was measured to be 20.5% and the responsivity reached its peak of 0.046 A/W at 275 nm. The cut-off wavelength was 292 nm.

  8. Supercritical fluid chromatography with photodiode array detection for pesticide analysis in papaya and avocado samples.

    Science.gov (United States)

    Pano-Farias, Norma S; Ceballos-Magaña, Silvia G; Gonzalez, Jorge; Jurado, José M; Muñiz-Valencia, Roberto

    2015-04-01

    To improve the analysis of pesticides in complex food matrices with economic importance, alternative chromatographic techniques, such as supercritical fluid chromatography, can be used. Supercritical fluid chromatography has barely been applied for pesticide analysis in food matrices. In this paper, an analytical method using supercritical fluid chromatography coupled to a photodiode array detection has been established for the first time for the quantification of pesticides in papaya and avocado. The extraction of methyl parathion, atrazine, ametryn, carbofuran, and carbaryl was performed through the quick, easy, cheap, effective, rugged, and safe methodology. The method was validated using papaya and avocado samples. For papaya, the correlation coefficient values were higher than 0.99; limits of detection and quantification ranged from 130-380 and 220-640 μg/kg, respectively; recovery values ranged from 72.8-94.6%; precision was lower than 3%. For avocado, limit of detection values were ˂450 μg/kg; precision was lower than 11%; recoveries ranged from 50.0-94.2%. Method feasibility was tested for lime, banana, mango, and melon samples. Our results demonstrate that the proposed method is applicable to methyl parathion, atrazine, ametryn, and carbaryl, toxics pesticides used worldwide. The methodology presented in this work could be applicable to other fruits. PMID:25641906

  9. Analysis of ependymal ciliary beat pattern and beat frequency using high speed imaging: comparison with the photomultiplier and photodiode methods

    Directory of Open Access Journals (Sweden)

    O'Callaghan Chris

    2012-06-01

    Full Text Available Abstract Background The aim of this study was to compare beat frequency measurements of ependymal cilia made by digital high speed imaging to those obtained using the photomultiplier and modified photodiode techniques. Using high speed video analysis the relationship of the power and recover strokes was also determined. Methods Ciliated strips of ependyma attached to slices from the brain of Wistar rats were incubated at 30°C and observed using a ×50 water immersion lens. Ciliary beat frequency was measured using each of the three techniques: the high speed video, photodiode and photomultiplier. Readings were repeated after 30 minutes incubation at 37°C. Ependymal cilia were observed in slow motion and the precise movement of cilia during the recovery stroke relative to the path travelled during the power stroke was measured. Results The mean (95% confidence intervals beat frequencies determined by the high speed video, photomultiplier and photodiode at 30°C were 27.7 (26.6 to 28.8, 25.5 (24.4 to 26.6 and 20.8 (20.4 to 21.3 Hz, respectively. The mean (95% confidence intervals beat frequencies determined by the high speed video, photomultiplier and photodiode at 37°C were 36.4 (34 to 39.5, 38.4 (36.8 to 39.9 and 18.8 (16.9 to 20.5 Hz. The inter and intra observer reliability for measurement of ciliary beat frequency was 3.8% and 1%, respectively. Ependymal cilia were observed to move in a planar fashion during the power and recovery strokes with a maximum deviation to the right of the midline of 12.1(11.8 to 13.0° during the power stroke and 12.6(11.6 to 13.6° to the left of the midline during the recovery stroke. Conclusion The photodiode technique greatly underestimates ciliary beat frequency and should not be used to measure ependymal ciliary beat frequency at the temperatures studied. Ciliary beat frequency from the high speed video and photomultiplier techniques cannot be used interchangeably. Ependymal cilia had minimal deviation to

  10. HyMaP: A hybrid magnitude-phase approach to unsupervised segmentation of tumor areas in breast cancer histology images

    Directory of Open Access Journals (Sweden)

    Adnan M Khan

    2013-01-01

    Full Text Available Background: Segmentation of areas containing tumor cells in standard H&E histopathology images of breast (and several other tissues is a key task for computer-assisted assessment and grading of histopathology slides. Good segmentation of tumor regions is also vital for automated scoring of immunohistochemical stained slides to restrict the scoring or analysis to areas containing tumor cells only and avoid potentially misleading results from analysis of stromal regions. Furthermore, detection of mitotic cells is critical for calculating key measures such as mitotic index; a key criteria for grading several types of cancers including breast cancer. We show that tumor segmentation can allow detection and quantification of mitotic cells from the standard H&E slides with a high degree of accuracy without need for special stains, in turn making the whole process more cost-effective. Method: Based on the tissue morphology, breast histology image contents can be divided into four regions: Tumor, Hypocellular Stroma (HypoCS, Hypercellular Stroma (HyperCS, and tissue fat (Background. Background is removed during the preprocessing stage on the basis of color thresholding, while HypoCS and HyperCS regions are segmented by calculating features using magnitude and phase spectra in the frequency domain, respectively, and performing unsupervised segmentation on these features. Results: All images in the database were hand segmented by two expert pathologists. The algorithms considered here are evaluated on three pixel-wise accuracy measures: precision, recall, and F1-Score. The segmentation results obtained by combining HypoCS and HyperCS yield high F1-Score of 0.86 and 0.89 with re-spect to the ground truth. Conclusions: In this paper, we show that segmentation of breast histopathology image into hypocellular stroma and hypercellular stroma can be achieved using magnitude and phase spectra in the frequency domain. The segmentation leads to demarcation of tumor

  11. Synthesis of hollow silica nanosphere with high accessible surface area and their hybridization with carbon matrix for drastic enhancement of electrochemical property

    Energy Technology Data Exchange (ETDEWEB)

    Alam, Mohammad Mydul; Yamahana, Haruki [Department of Chemistry, Faculty of Science and Engineering, Saga University, 1 Honjo-machi, Saga 840-8502 (Japan); Bastakoti, Bishnu Prasad [World Premier International (WPI) Research Center for Materials Nanoarchitectonics (MANA), National Institute for Materials Science - NIMS, 1-1 Namiki, Tsukuba, Ibaraki 305-0044 (Japan); Luitel, Hom Nath; Zhao, Wenwen [Department of Chemistry, Faculty of Science and Engineering, Saga University, 1 Honjo-machi, Saga 840-8502 (Japan); Yamauchi, Yusuke [World Premier International (WPI) Research Center for Materials Nanoarchitectonics (MANA), National Institute for Materials Science - NIMS, 1-1 Namiki, Tsukuba, Ibaraki 305-0044 (Japan); Department of Nanoscience and Nanoengineering, Faculty of Science and Engineering, Waseda University, 3-4-1 Okubo, Shinjuku, Tokyo 169-8555 (Japan); Watari, Takanori; Noguchi, Hideyuki [Department of Chemistry, Faculty of Science and Engineering, Saga University, 1 Honjo-machi, Saga 840-8502 (Japan); Nakashima, Kenichi, E-mail: nakashik@cc.saga-u.ac.jp [Department of Chemistry, Faculty of Science and Engineering, Saga University, 1 Honjo-machi, Saga 840-8502 (Japan)

    2014-09-30

    Highlights: • Hollow silica nanosphere with large void space and high surface area is synthesized. • Carbon was doped into silica layer through glucose solution and resulting carbon/silica composite drastically enhanced electrochemical property. • Combination of core–shell–corona micelle template and doping method could be a new platform for developing functional materials. - Abstract: Hollow silica nanospheres with high accessible surface area have been synthesized by using core–shell–corona polymeric micelle of poly (styrene-b-2-vinyle pyridine-b-ethylene oxide) (PS45k-PVP26k-PEO82k) as a template. The size of the template polymeric micelle depends on the pH of the solution, i.e. ≈100 nm at pH 7 whereas ≈300 nm at pH 4. The enlarged size of the micelle is possibly due to the protonation of the PVP block, which also serves as reaction sites for silica precursor. The size of the obtained silica nanosphere measured with transmission electron microscope (TEM) is around ≈70 nm and shell thickness is ≈20 nm. Fourier transformed infrared spectroscopy (FTIR) data confirms that the polymer template is completely removed during calcination. Conductive carbon is doped into the silica nanosphere through glucose solution followed by hydrothermal treatment and pyrolysis. It is found that the electrochemical performance and stability of the silica nanosphere is dramatically enhanced after carbon doping. The combined strategy of the core–shell–corona micelle as template and carbon doping could represent a new platform for the researchers to develop functional nanomaterials.

  12. Characterization of a CsI(Tl) array coupled to avalanche photodiodes for the Barrel of the CALIFA calorimeter at the NEPTUN tagged gamma beam facility

    Science.gov (United States)

    Gascón, M.; Schnorrenberger, L.; Pietras, B.; Álvarez-Pol, H.; Cortina-Gil, D.; Díaz Fernández, P.; Duran, I.; Glorius, J.; González, D.; Perez-Loureiro, D.; Pietralla, N.; Savran, D.; Sonnabend, K.

    2013-10-01

    Among the variety of crystal calorimeters recently designed for several physics facilities, CALIFA (CALorimeter for In-Flight emitted gAmmas and light-charged particles) has especially demanding requirements since it must perform within a very complicated energy domain (gamma-ray energies from 0.1 to 20 MeV and up to 300 MeV protons). As part of the R&D program for the Barrel section of CALIFA, a reduced geometry prototype was constructed. This prototype consisted of a 3 × 5 array of CsI(Tl) crystals of varying dimensions, coupled to large area avalanche photodiodes. Here reported are the details regarding the construction of the prototype and the experimental results obtained at the NEPTUN tagged gamma beam facility, reconstructing gamma energies up to 10 MeV. Dedicated Monte Carlo simulations of the setup were also performed, enabling a deeper understanding of the experimental data. The experimental results demonstrate the effectiveness of the reconstruction method and helped to establish the most suitable crystal geometry to be employed within the forthcoming calorimeter.

  13. Performance assessment of simulated 3D laser images using Geiger-mode avalanche photo-diode: tests on simple synthetic scenarios

    Science.gov (United States)

    Coyac, Antoine; Hespel, Laurent; Riviere, Nicolas; Briottet, Xavier

    2015-10-01

    In the past few decades, laser imaging has demonstrated its potential in delivering accurate range images of objects or scenes, even at long range or under bad weather conditions (rain, fog, day and night vision). We note great improvements in the conception and development of single and multi infrared sensors, concerning embedability, circuitry reading capacity, or pixel resolution and sensitivity, allowing a wide diversity of applications (i.e. enhanced vision, long distance target detection and reconnaissance, 3D DSM generation). Unfortunately, it is often difficult to dispose of all the instruments to compare their performance for a given application. Laser imaging simulation has shown to be an interesting alternative to acquire real data, offering a higher flexibility to perform this sensors comparison, plus being time and cost efficient. In this paper, we present a 3D laser imaging end-to-end simulator using a focal plane array with Geiger mode detection, named LANGDOC. This work aims to highlight the interest and capability of this new generation of photo-diodes arrays, especially for airborne mapping and surveillance of high risk areas.

  14. Antioxidant activity evaluation and HPLC-photodiode array/MS polyphenols analysis of pomegranate juice from selected italian cultivars: A comparative study.

    Science.gov (United States)

    Fanali, Chiara; Belluomo, Maria Giovanna; Cirilli, Marco; Cristofori, Valerio; Zecchini, Maurizio; Cacciola, Francesco; Russo, Marina; Muleo, Rosario; Dugo, Laura

    2016-07-01

    Chemical composition of pomegranate juice can vary due to cultivar, area of cultivation, ripening, climate, and other variables. This study investigates the polyphenolic composition and antioxidant activity of juices obtained from six old Italian pomegranate cultivars. Fruit accessions physicochemical characteristics were determined. Total polyphenols content (TPC), anthocyanin content (TAC) and proanthocyanidin content (TPAC) were measured in the juice samples. Phenolic bioactive molecules were analyzed by HPLC-photodiode array (PDA)/ESI-MS in all the pomegranate juices. In total, seven nonanthocyanidinic and six anthocyanidinic compounds were identified. The six anthocyanins were found in all juices although at different amounts. These results were correlated with antioxidant activity measured by three different chemical assays: 2,2 diphenyl-1-picrylhydrazyl (DPPH(•) ) scavenging activity assay, Trolox equivalent antioxidant capacity (TEAC) method and ferric reducing-antioxidant power (FRAP) assay. Pomegranate juices obtained by six different varieties show variable polyphenolic content and antioxidant activity. The antioxidant capacity methods used have shown variable sensitivity, supporting the hypothesis that different methods for the assessment of antioxidant capacity of food compounds are indeed necessary, due to complexity of sample composition and assay chemical mechanism and sensitivity. Juices from Italian pomegranate show good levels of polyphenols content and antioxidant activity making them potential candidates for employment in the food industry. PMID:26814700

  15. Fingerprint analysis of Hibiscus mutabilis L. leaves based on ultra performance liquid chromatography with photodiode array detector combined with similarity analysis and hierarchical clustering analysis methods

    Directory of Open Access Journals (Sweden)

    Xianrui Liang

    2013-01-01

    Full Text Available Background: A method for chemical fingerprint analysis of Hibiscus mutabilis L. leaves was developed based on ultra performance liquid chromatography with photodiode array detector (UPLC-PAD combined with similarity analysis (SA and hierarchical clustering analysis (HCA. Materials and Methods: 10 batches of Hibiscus mutabilis L. leaves samples were collected from different regions of China. UPLC-PAD was employed to collect chemical fingerprints of Hibiscus mutabilis L. leaves. Results: The relative standard deviations (RSDs of the relative retention times (RRT and relative peak areas (RPA of 10 characteristic peaks (one of them was identified as rutin in precision, repeatability and stability test were less than 3%, and the method of fingerprint analysis was validated to be suitable for the Hibiscus mutabilis L. leaves. Conclusions: The chromatographic fingerprints showed abundant diversity of chemical constituents qualitatively in the 10 batches of Hibiscus mutabilis L. leaves samples from different locations by similarity analysis on basis of calculating the correlation coefficients between each two fingerprints. Moreover, the HCA method clustered the samples into four classes, and the HCA dendrogram showed the close or distant relations among the 10 samples, which was consistent to the SA result to some extent.

  16. Time-resolved non-contact fluorescence diffuse optical tomography measurements with ultra-fast time-correlated single photon counting avalanche photodiodes

    Science.gov (United States)

    Bérubé-Lauzière, Yves; Robichaud, Vincent; Lapointe, Éric

    2007-07-01

    The design and fabrication of time-correlated single photon counting (TCSPC) avalanche photodiodes (APDs) and associated quenching circuits have made significant progresses in recent years. APDs with temporal resolutions comparable to microchannel plate photomultiplier tubes (MCP-PMTs) are now available. MCP-PMTs were until these progresses the best TCSPC detectors with timing resolutions down to 30ps. APDs can now achieve these resolutions at a fraction of the cost. Work is under way to make the manufacturing of TCSPC APDs compatible with standard electronics fabrication practices. This should allow to further reduce their cost and render them easier to integrate in complex multi-channel TCSPC electronics, as needed in diffuse optical tomography (DOT) systems. Even if their sensitive area is much smaller than that of the ubiquitous PMT used in TCSPC, we show that with appropriate selection of optical components, TCSPC APDs can be used in time-domain DOT. To support this, we present experimental data and calculations clearly demonstrating that comparable measurements can be obtained with APDs and PMTs. We are, to our knowledge, the first group using APDs in TD DOT, in particular in non-contact TD fluorescence DOT.

  17. Hybrid integrated metro ring node subsystem on a chip

    Science.gov (United States)

    Gerhardt, Reinald; Fujita, Junichiro; Radojevic, Antonije M.; Zhuromskyy, Oleksandr; Eldada, Louay A.

    2003-07-01

    We report on a hybrid integrated metro ring node subsystem on a chip that consists of an array of four independent reconfigurable optical add-drop circuits, each with power monitoring and automatic load balancing, and supporting shared and dedicated protection protocols in two-fiber metro ring optical networks. The four-channel metro ring node chip has polymeric optical waveguiding circuitry, thermally actuated with heaters consisting of resistive strips of metal. Photodiode arrays are flip-chip mounted on top of 45° mirrors cut in the waveguides of optical power taps. The mirrors are fabricated by Excimer laser ablation of the polymer followed by smoothing and metalization. The non-integrated implementation of a metro ring node uses 48 discrete elements, namely 8 1×2 switches, 8 2×2 switches, 8 VOAs, 12 taps, and 12 photodiodes. The proposed integrated solution is an exemplary embodiment of the benefits of optoelectronic integration as it provides, when compared to the discrete solution, significant cost reduction, space savings, lower electrical power consumption, higher reliability (fewer devices, runs cooler), and fewer board-level fiber interconnects.

  18. The Power of Hybridization

    CERN Document Server

    CERN. Geneva

    2011-01-01

    Programming languages always seem to do some things well but not others: Python punts when it comes to user interfaces, Java’s artificial complexity prevents rapid development and produces tangles, and it will be awhile before we see benefits from C++ concurrency work. The cognitive load of languages and their blind spots increases the cost of experimentation, impeding your ability to fail fast and iterate. If you use a single language to solve your problem, you are binding yourself to the worldview limitations and the mistakes made by the creator of that language. Consider increasing your wiggle room by crossing language boundaries, complementing a language that is powerful in one area with a different language powerful in another. Language hybridization can speed development to quickly discover your real problems, giving you more time to fix them. After making a case for hybridizing your thinking in general, I will present a number of simple examples; first showing the benefits of using other languages...

  19. 3D NANOTUBE FIELD EFFECT TRANSISTORS FOR HYBRID HIGH-PERFORMANCE AND LOW-POWER OPERATION WITH HIGH CHIP-AREA EFFICIENCY

    KAUST Repository

    Fahad, Hossain M.

    2014-03-01

    scaling on silicon, the amount of current generated per device has to be increased while keeping short channel effects and off-state leakage at bay. The objective of this doctoral thesis is the investigation of an innovative vertical silicon based architecture called the silicon nanotube field effect transistor (Si NTFET). This topology incorporates a dual inner/outer core/shell gate stack strategy to control the volume inversion properties in a hollow silicon 1D quasi-nanotube under a tight electrostatic configuration. Together with vertically aligned source and drain, the Si NTFET is capable of very high on-state performance (drive current) in an area-efficient configuration as opposed to arrays of gate-all-around nanowires, while maintaining leakage characteristics similar to a single nanowire. Such a device architecture offsets the need of device arraying that is needed with fin and nanowire architectures. Extensive simulations are used to validate the potential benefits of Si NTFETs over GAA NWFETs on a variety of platforms such as conventional MOSFETs, tunnel FETs, junction-less FETs. This thesis demonstrates a novel CMOS compatible process flow to fabricate vertical nanotube transistors that offer a variety of advantages such as lithography-independent gate length definition, integration of epitaxially grown silicon nanotubes with spacer based gate dielectrics and abrupt in-situ doped source/drain junctions. Experimental measurement data will showcase the various materials and processing challenges in fabricating these devices. Finally, an extension of this work to topologically transformed wavy channel FinFETs is also demonstrated keeping in line with the theme of area efficient high-performance electronics.

  20. Characterization of Large Area APDs for the EXO-200 Detector

    Energy Technology Data Exchange (ETDEWEB)

    Neilson, R.; LePort, F.; Pocar, A.; /Stanford U., Phys. Dept.; Kumar, K.; /Massachusetts U., Amherst; Odian, A.; Prescott, C.Y.; /SLAC; Tenev, V.; /Stanford U., Phys. Dept.; Ackerman, N.; /SLAC; Akimov, D.; /Moscow, ITEP; Auger, M.; /Bern U., LHEP; Benitez-Medina, C.; /Colorado State U.; Breidenbach, M.; /SLAC; Burenkov, A.; /Moscow, ITEP; Conley, R.; /SLAC; Cook, S.; /Colorado State U.; deVoe, R.; Dolinski, M.J.; /Stanford U., Phys. Dept.; Fairbank, W., Jr.; /Colorado State U.; Farine, J.; /Laurentian U.; Fierlinger, P.; Flatt, B.; /Stanford U., Phys. Dept. /Bern U., LHEP /Stanford U., Phys. Dept. /Maryland U. /Colorado State U. /Laurentian U. /Carleton U. /SLAC /Maryland U. /Moscow, ITEP /Alabama U. /SLAC /Colorado State U. /Stanford U., Phys. Dept. /Alabama U. /Stanford U., Phys. Dept. /Alabama U. /SLAC /Carleton U. /SLAC /Maryland U. /Moscow, ITEP /Carleton U. /Stanford U., Phys. Dept. /Bern U., LHEP /SLAC /Laurentian U. /SLAC /Maryland U.

    2011-12-02

    EXO-200 uses 468 large area avalanche photodiodes (LAAPDs) for detection of scintillation light in an ultra-low-background liquid xenon (LXe) detector. We describe initial measurements of dark noise, gain and response to xenon scintillation light of LAAPDs at temperatures from room temperature to 169 K - the temperature of liquid xenon. We also describe the individual characterization of more than 800 LAAPDs for selective installation in the EXO-200 detector.

  1. Hybrid RRM Architecture for Future Wireless Networks

    DEFF Research Database (Denmark)

    Tragos, Elias; Mihovska, Albena D.; Mino, Emilio;

    2007-01-01

    and wide area respectively. The aim of this paper is twofold: first, it presents an architectural solution for scalable and hybrid radio resource management to efficiently integrate the different WINNER modes; second, it proposes a hybrid handover mechanism to exploit the availability of the different...

  2. Reduction of the dark current in a P3HT-based organic photodiode with a ytterbium-fluoride buffer layer for electron transport

    Science.gov (United States)

    Lim, Seong Bin; Ji, Chan Hyuk; Kim, Kee Tae; Oh, Se Young

    2016-08-01

    Photodiodes are widely used to convert light into electrical signals. The conventional silicon (Si) based photodiodes boast high photoelectric conversion efficiency and detectivity. However, in general, inorganic-based photodiodes have low sensitivity at visible wavelengths due to their absorption of infrared wavelengths. Recently, electrical conducting polymer-based photodiodes have received significant attention due to their flexibility, low cost of production and high sensitivity at visible wavelength ranges. In the present work, we fabricated an organic photodiode (OPD) with a consisting of ITO/ NiO x / P3HT:PC60BM/ YbF3/Al structure. In the OPD, a yitterbium fluoride (YbF3) buffer layer was used as the electron transport layer. The OPD was analyzed by using optical-electrical measurements to determine its J-V, detectivity, and dynamic characteristics. We investigated the physical effects of the YbF3 buffer layer on the performance of OPD such as its carrier extraction, leakage current and ohmic characteristics.

  3. A novel type heterojunction photodiodes formed junctions of Au/LiZnSnO and LiZnSnO/p-Si in series

    Energy Technology Data Exchange (ETDEWEB)

    Aydin, H. [Department of Metallurgical and Materials Science, Faculty of Engineering, Tunceli University, Tunceli (Turkey); Tataroğlu, A. [Department of Physics, Faculty of Science, Gazi University, Ankara (Turkey); Al-Ghamdi, Ahmed A. [Department of Physics, Faculty of Science, King Abdulaziz University, Jeddah (Saudi Arabia); Yakuphanoglu, F., E-mail: fyhanoglu@firat.edu.tr [Department of Metallurgical and Materials Science, Faculty of Engineering, Tunceli University, Tunceli (Turkey); Department of Physics, Faculty of Science, King Abdulaziz University, Jeddah (Saudi Arabia); El-Tantawy, Farid [Department of Physics, Faculty of Science, Suez Canal University, Ismailia (Egypt); Farooq, W.A. [Physics and Astronomy Department, College of Science, King Saud University, Riyadh (Saudi Arabia)

    2015-03-15

    Highlights: • Lithium–zinc–tin–oxide thin films were prepared by sol gel method. • The Au/LiZnSnO/p-Si/Al photodiodes were fabricated using a LZTO layer grown on p-Si. • The photodiodes with Li-doped ZTO interfacial layer exhibited a better device performance. - Abstract: Lithium–zinc–tin–oxide thin films were prepared by sol gel method. The structural and optical properties of the films were investigated. The optical band gaps of the LiZnSnO films were found to be 3.78 eV for 0 at.% Li, 3.77 eV for 1 at.% Li, 3.87 eV for 3 at.% Li and 3.85 eV for 5 at.% Li, respectively. Au/LiZnSnO/p-Si/Al photodiodes were fabricated using a lithium–zinc–tin–oxide (LZTO, Li–Zn–Sn–O) layer grown on p-Si semiconductor. The electrical characteristics of the photodiodes were analyzed by current–voltage, capacitance–voltage and conductance–voltage measurements. The reverse current of the diodes increases with both the increasing illumination intensity and Li content. It was found that the Li-doped ZTO photodiodes exhibited a better device performance than those with an undoped ZTO.

  4. Hybrid Qualifications

    DEFF Research Database (Denmark)

    has turned out as a major focus of European education and training policies and certainly is a crucial principle underlying the European Qualifications Framework (EQF). In this context, «hybrid qualifications» (HQ) may be seen as an interesting approach to tackle these challenges as they serve «two...... masters», i.e. by producing skills for the labour market and enabling individuals to progress more or less directly to higher education. The specific focus of this book is placed on conditions, structures and processes which help to combine VET with qualifications leading into higher education...

  5. A discrete scintillation camera module using silicon photodiode readout of CsI(Tl) crystals for breast cancer imaging

    Energy Technology Data Exchange (ETDEWEB)

    Gruber, G.J.; Moses, W.W.; Derenzo, S.E.; Wang, N.W.; Beuville, E.; Ho, M.H. [Lawrence Berkeley National Lab., CA (United States)

    1998-06-01

    The authors characterize a 3 x 4 element imaging array consisting of 3 x 3 x 5 mm{sup 3} CsI(Tl) scintillator crystals individually read out by 3 x 3 mm{sup 2} PIN silicon photodiodes. The array is a prototype for larger modules for use in single photon breast cancer imaging. The photodiode output signals are amplified with a 16 channel custom IC (< 3 mm on a side), after which a ``Winner Take All`` (WTA) custom IC identifies the crystal of interaction based on relative signal amplitudes. The compact nature of these readout electronics will simplify the construction of larger imaging arrays. The photodiodes were developed for low leakage current ({approximately} 50 pA) and yield a total electronic noise of 390 e- full width at half maximum (fwhm) at a shaping time of 8 {micro}s, with signal levels of 6,600 e- for the 140 keV emissions of {sup 99m}Tc. Array pixels demonstrate an average room temperature energy resolution of 10.7 {+-} 0.6% fwhm for these 140 keV gamma rays. The authors observe an intrinsic spatial resolution of 3.3 mm fwhm for a 2.5 mm diameter {sup 57}Co beam on the face of the crystal array, and a system resolution of 5.9 mm fwhm for a 2 mm diameter uncollimated {sup 99m}Tc source viewed through a high resolution hexagonal hole collimator at an imaging distance of 5 cm.

  6. High-resolution dynamic CT scanner based on a variable-zoom XRII and a linear photodiode array

    Science.gov (United States)

    Drangova, Maria; Holdsworth, David W.; Fenster, Aaron

    1993-09-01

    We have developed a CT scanner with high temporal and spatial resolution which can be used to acquire dynamic images of objects undergoing periodic motion. Our system comprises of an x-ray image intensifier (XRII) optically coupled to a linear photo-diode array (PDA) camera. The XRII has been modified to vary electronically the magnification of the image continuously over fields-of-view (FOV) ranging between 8 and 24 cm, and thus increasing the resolution from 1.4 mm-1 to 3.8 mm-1. In this way, we can select a magnification which maximizes the image resolution for a given object.

  7. Thermal imager based on the array light sensor device of 128×128 CdHgTe-photodiodes

    Directory of Open Access Journals (Sweden)

    Reva V. P.

    2010-08-01

    Full Text Available The results of investigation of developed thermal imager for middle (3—5 µm infrared region are presented and its applications features are discussed. The thermal imager consists of cooled to 80 K 128×128 diodes focal plane array on the base of cadmium–mercury–telluride compound and cryostat with temperature checking system. The photodiode array is bonded with readout device (silicon focal processor via indium microcontacts. The measured average value of noise equivalent temperature difference was NETD= 20±4 mK (background radiation temperature T = 300 K, field of view 2θ = 180°, the cooled diaphragm was not used.

  8. Development of a (Hg, Cd)Te photodiode detector, Phase 2. [for 10.6 micron spectral region

    Science.gov (United States)

    1972-01-01

    High speed sensitive (Hg,Cd)Te photodiode detectors operating in the 77 to 90 K temperature range have been developed for the 10.6 micron spectral region. P-N junctions formed by impurity (gold) diffusion in p-type (Hg, Cd) Te have been investigated. It is shown that the bandwidth and quantum efficiency of a diode are a constant for a fixed ratio of mobility/lifetime ratio of minority carriers. The minority carrier mobility and lifetime uniquely determine the bandwidth and quantum efficiency and indicate the shallow n on p (Hg,Cd) Te diodes are preferable as high performance, high frequency devices.

  9. Tuning of Detection Wavelength in a Resonant-Cavity-Enhanced Quantum-Dot-Embedded Photodiode by Changing Detection Angle

    Institute of Scientific and Technical Information of China (English)

    ZHANG Hao; ZHU Hui; ZHENG Hou-Zhi; XU Ping; PENG Hong-Ling; TAN Ping-Heng; YANG Fu-Hua; NI Hai-Qiao; ZENG Yu-Xin; GAN Hua-Dong

    2005-01-01

    @@ We have Fabricated a resonant-cavity-enhanced photodiode (RCE-PD) with InGaAs quantum dots (QDs) as an active medium. This sort of QD-embedded RCE-PD is capable of a peak external quantum efficiency of 32%and responsivity of 0.27 A/W at 1.058 μm with a full width at half maximum (FWHM) of 5nm. Angle-resolved photocurrent response eventually proves that with the detection angle changing from 0° to 60°, the peak-current wavelength shifts towards the short wavelength side by 37nm, while the quantum efficiency remains larger than 15%.

  10. A novel camera type for very high energy gamma-ray astronomy based on Geiger-mode avalanche photodiodes

    CERN Document Server

    Anderhub, H; Biland, A; Boller, A; Braun, I; Bretz, T; Commichau, S; Commichau, V; Dorner, D; Gendotti, A; Grimm, O; von Gunten, H; Hildebrand, D; Horisberger, U; Krähenbühl, T; Kranich, D; Lorenz, E; Lustermann, W; Mannheim, K; Neise, D; Pauss, F; Renker, D; Rhode, W; Rissi, M; Röser, U; Rollke, S; Stark, L S; Stucki, J -P; Viertel, G; Vogler, P; Weitzel, Q

    2009-01-01

    Geiger-mode avalanche photodiodes (G-APD) are promising new sensors for light detection in atmospheric Cherenkov telescopes. In this paper, the design and commissioning of a 36-pixel G-APD prototype camera is presented. The data acquisition is based on the Domino Ring Sampling (DRS2) chip. A sub-nanosecond time resolution has been achieved. Cosmic-ray induced air showers have been recorded using an imaging mirror setup, in a self-triggered mode. This is the first time that such measurements have been carried out with a complete G-APD camera.

  11. A design for a linear array PIN photodiode for use in a Computed mammo-Tomography (CmT) system

    Energy Technology Data Exchange (ETDEWEB)

    Park, Shin-Woong [Department of Electronics and Information Engineering, Korea University, 1.5ka Anam-dong, Sungbuk-gu, Seoul 136-701 (Korea, Republic of); Yuk, Sunwoo [Department of Electronics and Control, Korea Orthopedics and Rehabilitation Engineering Center, 47-3, Gusan-dong, Bupyung-gu, Incheon 403-712 (Korea, Republic of); Park, Jung-Byung [DRGEM Corporation, 6th Floor Research Institute, Asan Medical Center, Pungnap-2dong, Songpa-gu, Seoul 138-736 (Korea, Republic of); Yi, Yun [Department of Electronics and Information Engineering, Korea University, 1.5ka Anam-dong, Sungbuk-gu, Seoul 136-701 (Korea, Republic of)], E-mail: yunyi@korea.ac.kr

    2009-10-21

    A p-i-n (PIN) photodiode has been used in a solid-state detector for X-ray detection as a photosensor of visible light from the scintillator. The most sensitive material used as low-energy X-ray detector in the mammography system is a Gd{sub 2}O{sub 2}S (GOS). As the light from GOS having a short wavelength in the range of 450-700 nm (peak at 510 nm) is absorbed within a very shallow layer near the surface of photodiode before arriving at depletion region and does not contribute to the signal. For designing the PIN photodiode, it is important to make p-layer as shallow as possible. In order to achieve shallow junction, the optimum conditions of ion implantation such as thickness of SiO{sub 2} oxide barrier, tilting angle of the wafer with respect to incident ion beam, and annealing conditions, have been determined using simulation results. The penetration depths are about 2 {mu}m for 510 nm, and 7 {mu}m for 700 nm. It is necessary for adequate depletion depth (about 10 {mu}m) to acquire the entire incident light. So far, wafers of {>=}1000 and {>=}150 {omega} cm resistivity were chosen, which offer about 15 and 6 {mu}m depletion depth, respectively. The pixel pitch of photodiode is 0.4 mmx3.0 mm and one module has 64 channels in linear array. Depth of the active p-layer is under 0.3 {mu}m in zero bias. Measured leakage currents under 10 pA/mm{sup 2} for both diodes and junction capacitances are 16 and 29 pF/mm{sup 2} in zero bias for the diodes of {>=}150 and {>=}1000 {omega} cm resistivity, respectively. The breast phantom, which was scanned by the Computed mammo-Tomography (CmT) system with two different detector modules and the data acquisition system, was developed. Little differences for distinct light absorption were shown in the three-dimensional images acquired in this study.

  12. A novel camera type for very high energy gamma-ray astronomy based on Geiger-mode avalanche photodiodes

    Energy Technology Data Exchange (ETDEWEB)

    Anderhub, H; Biland, A; Boller, A; Braun, I; Commichau, S; Commichau, V; Dorner, D; Gendotti, A; Grimm, O; Gunten, H von; Hildebrand, D; Horisberger, U; Kraehenbuehl, T; Kranich, D; Lorenz, E; Lustermann, W [Institute for Particle Physics, ETH Zurich, Schafmattstr. 20, 8093 Zurich (Switzerland); Backes, M; Neise, D [TU Dortmund University, Otto-Hahn-Str. 4, 44227 Dortmund (Germany); Bretz, T; Mannheim, K [University of Wuerzburg Am Hubland, 97074 Wuerzburg (Germany)], E-mail: qweitzel@phys.ethz.ch (and others)

    2009-10-15

    Geiger-mode avalanche photodiodes (G-APD) are promising new sensors for light detection in atmospheric Cherenkov telescopes. In this paper, the design and commissioning of a 36-pixel G-APD prototype camera is presented. The data acquisition is based on the Domino Ring Sampling (DRS2) chip. A sub-nanosecond time resolution has been achieved. Cosmic-ray induced air showers have been recorded using an imaging mirror setup, in a self-triggered mode. This is the first time that such measurements have been carried out with a complete G-APD camera.

  13. Hybrid Propulsion Technology Program

    Science.gov (United States)

    Jensen, G. E.; Holzman, A. L.

    1990-01-01

    Future launch systems of the United States will require improvements in booster safety, reliability, and cost. In order to increase payload capabilities, performance improvements are also desirable. The hybrid rocket motor (HRM) offers the potential for improvements in all of these areas. The designs are presented for two sizes of hybrid boosters, a large 4.57 m (180 in.) diameter booster duplicating the Advanced Solid Rocket Motor (ASRM) vacuum thrust-time profile and smaller 2.44 m (96 in.), one-quater thrust level booster. The large booster would be used in tandem, while eight small boosters would be used to achieve the same total thrust. These preliminary designs were generated as part of the NASA Hybrid Propulsion Technology Program. This program is the first phase of an eventual three-phaes program culminating in the demonstration of a large subscale engine. The initial trade and sizing studies resulted in preferred motor diameters, operating pressures, nozzle geometry, and fuel grain systems for both the large and small boosters. The data were then used for specific performance predictions in terms of payload and the definition and selection of the requirements for the major components: the oxidizer feed system, nozzle, and thrust vector system. All of the parametric studies were performed using realistic fuel regression models based upon specific experimental data.

  14. Printed hybrid systems

    Science.gov (United States)

    Karioja, Pentti; Mäkinen, Jukka-Tapani; Keränen, Kimmo; Aikio, Janne; Alajoki, Teemu; Jaakola, Tuomo; Koponen, Matti; Keränen, Antti; Heikkinen, Mikko; Tuomikoski, Markus; Suhonen, Riikka; Hakalahti, Leena; Kopola, Pälvi; Hast, Jukka; Liedert, Ralf; Hiltunen, Jussi; Masuda, Noriyuki; Kemppainen, Antti; Rönkä, Kari; Korhonen, Raimo

    2012-04-01

    This paper presents research activities carried out at VTT Technical Research Centre of Finland in the field of hybrid integration of optics, electronics and mechanics. Main focus area in our research is the manufacturing of electronic modules and product structures with printed electronics, film-over-molding and polymer sheet lamination technologies and the goal is in the next generation of smart systems utilizing monolithic polymer packages. The combination of manufacturing technologies such as roll-to-roll -printing, injection molding and traditional component assembly is called Printed Hybrid Systems (PHS). Several demonstrator structures have been made, which show the potential of polymer packaging technology. One demonstrator example is a laminated structure with embedded LED chips. Element thickness is only 0.3mm and the flexible stack of foils can be bent in two directions after assembly process and was shaped curved using heat and pressure. The combination of printed flexible circuit boards and injection molding has also been demonstrated with several functional modules. The demonstrators illustrate the potential of origami electronics, which can be cut and folded to 3D shapes. It shows that several manufacturing process steps can be eliminated by Printed Hybrid Systems technology. The main benefits of this combination are small size, ruggedness and conformality. The devices are ideally suited for medical applications as the sensitive electronic components are well protected inside the plastic and the structures can be cleaned easily due to the fact that they have no joints or seams that can accumulate dirt or bacteria.

  15. Continuity Controlled Hybrid Automata

    OpenAIRE

    Bergstra, J.A.; Middelburg, C. A.

    2004-01-01

    We investigate the connections between the process algebra for hybrid systems of Bergstra and Middelburg and the formalism of hybrid automata of Henzinger et al. We give interpretations of hybrid automata in the process algebra for hybrid systems and compare them with the standard interpretation of hybrid automata as timed transition systems. We also relate the synchronized product operator on hybrid automata to the parallel composition operator of the process algebra. It turns out that the f...

  16. Hybrid Rice for Dry Regions

    Institute of Scientific and Technical Information of China (English)

    2005-01-01

    Luo Lijun, director of the Shanghai Agrobiological Gene Center, recently announced that Hanyou No. 3 - a genetically modified rice capable of producing high yields in dry areas - has been developed at the center.The hybrid yields 7,571 kilograms per hectare, about the same as ordinary rice.

  17. Alternative Spectral Photoresponse in a p-Cu2ZnSnS4/n-GaN Heterojunction Photodiode by Modulating Applied Voltage.

    Science.gov (United States)

    Yang, Gang; Li, Yong-Feng; Yao, Bin; Ding, Zhan-Hui; Deng, Rui; Fang, Xuan; Wei, Zhi-Peng

    2015-08-01

    We report alternative visible and ultraviolet light response spectra in a p-Cu2ZnSnS4 (p-CZTS)/n-GaN heterojunction photodiode. A CZTS film was deposited on an n-GaN/sapphire substrate using a magnetron sputtering method. Current-voltage characteristic of the p-CZTS/n-GaN heterojunction photodiode showed a good rectifying behavior. The spectral response measurements indicate that the response wavelength of the photodiode can be tuned from ultraviolet to visible regions via applying zero and reverse bias. A band alignment at the interface of the p-CZTS/n-GaN heterojunction was proposed to interpret the spectral response of the device. PMID:26182428

  18. Visible-blind ultraviolet photodiode fabricated by UV oxidation of metallic zinc on p-Si

    Energy Technology Data Exchange (ETDEWEB)

    Zhang, Dongyuan; Uchida, Kazuo; Nozaki, Shinji, E-mail: nozaki@ee.uec.ac.jp [Graduate School of Informatics and Engineering, The University of Electro-Communications, Chofu-shi, Tokyo 182-8585 (Japan)

    2015-09-07

    A UV photodiode fabricated by the UV oxidation of a metallic zinc thin film on p-Si has manifested unique photoresponse characteristics. The electron concentration found by the Hall measurement was 3 × 10{sup 16 }cm{sup −3}, and such a low electron concentration resulted in a low visible photoluminescence. UV illumination enhances the oxidation at low temperatures and decreases the concentration of the oxygen vacancies. The I-V characteristic showed a good rectification with a four-order magnitude difference in the forward and reverse currents at 2 V, and its linear and frequency independent C{sup −2}–V characteristic confirmed an abrupt pn junction. The photoresponse showed a visible blindness with a responsivity ratio of UV and visible light as high as 100. Such a visible-blind photoresponse was attributed to the optimum thickness of the SiO{sub 2} formed on the Si surface during the UV oxidation at 400 °C. A lower potential barrier to holes at the ZnO/SiO{sub 2} interface facilitates Fowler-Nordheim tunneling of the photo-generated holes during the UV illumination, while a higher potential barrier to electrons efficiently blocks transport of the photo-generated electrons to the ZnO during the visible light illumination. The presence of oxide resulted in a slow photoresponse to the turn-on and off of the UV light. A detailed analysis is presented to understand how the photo-generated carriers contribute step by step to the photocurrent. In addition to the slow photoresponse associated with the SiO{sub 2} interfacial layer, the decay of the photocurrent was found extremely slow after turn-off of the UV light. Such a slow decay of the photocurrent is referred to as a persistent photoconductivity, which is caused by metastable deep levels. It is hypothesized that Zn vacancies form such a deep level, and that the photo-generated electrons need to overcome a thermal-energy barrier for capture. The ZnO film by the UV oxidation at 400 °C was found

  19. Photodiode radiation hardness, lyman-alpha emitting galaxies and photon detection in liquid argon neutrino detectors

    Science.gov (United States)

    Baptista, Brian

    My dissertation is comprised of three projects: 1) studies of Lyman-alpha Emitting galaxies (LAEs), 2) radiation hardness studies of InGaAs photodiodes (PDs), and 3) scintillation photon detection in liquid argon (LAr) neutrino detectors. I began work on the project that has now become WFIRST, developing a science case that would use WFIRST after launch for the observation of LAEs. The radiation hardness of PDs was as an effort to support the WFIRST calibration team. When WFIRST was significantly delayed, I joined an R&D effort that applied my skills to work on photon detection in LAr neutrino detectors. I report results on a broadband selection method developed to detect high equivalent width (EW) LAEs. Using photometry from the CFHT-Legacy Survey Deep 2 and 3 fields, I have spectroscopically confirmed 63 z=2.5-3.5 LAEs using the WIYN/Hydra spectrograph. Using UV continuum-fitting techniques I computed properties such as EWs, internal reddening and star formation rates. 62 of my LAEs show evidence to be normal dust-free LAEs. Second, I present an investigation into the effects of ionizing proton radiation on commercial off-the-shelf InGaAs PDs. I developed a monochromator-based test apparatus that utilized NIST-calibrated reference PDs. I tested the PDs for changes to their dark current, relative responsivity as a function of wavelength, and absolute responsivity. I irradiated the test PDs using 30, 52, and 98 MeV protons at the IU Cyclotron Facility. I found the InGaAs PDs showed increased dark current as the fluence increased with no evidence of broadband response degradation at the fluences expected at an L2 orbit and a 10-year mission lifetime. Finally, I detail my efforts on technology development of both optical detector technologies and waveshifting light guide construction for LAr vacuum UV scintillation light. Cryogenic neutrino detectors use photon detection for both accelerator based science and for SNe neutrino detection and proton decay. I have

  20. Visible-blind ultraviolet photodiode fabricated by UV oxidation of metallic zinc on p-Si

    International Nuclear Information System (INIS)

    A UV photodiode fabricated by the UV oxidation of a metallic zinc thin film on p-Si has manifested unique photoresponse characteristics. The electron concentration found by the Hall measurement was 3 × 1016 cm−3, and such a low electron concentration resulted in a low visible photoluminescence. UV illumination enhances the oxidation at low temperatures and decreases the concentration of the oxygen vacancies. The I-V characteristic showed a good rectification with a four-order magnitude difference in the forward and reverse currents at 2 V, and its linear and frequency independent C−2–V characteristic confirmed an abrupt pn junction. The photoresponse showed a visible blindness with a responsivity ratio of UV and visible light as high as 100. Such a visible-blind photoresponse was attributed to the optimum thickness of the SiO2 formed on the Si surface during the UV oxidation at 400 °C. A lower potential barrier to holes at the ZnO/SiO2 interface facilitates Fowler-Nordheim tunneling of the photo-generated holes during the UV illumination, while a higher potential barrier to electrons efficiently blocks transport of the photo-generated electrons to the ZnO during the visible light illumination. The presence of oxide resulted in a slow photoresponse to the turn-on and off of the UV light. A detailed analysis is presented to understand how the photo-generated carriers contribute step by step to the photocurrent. In addition to the slow photoresponse associated with the SiO2 interfacial layer, the decay of the photocurrent was found extremely slow after turn-off of the UV light. Such a slow decay of the photocurrent is referred to as a persistent photoconductivity, which is caused by metastable deep levels. It is hypothesized that Zn vacancies form such a deep level, and that the photo-generated electrons need to overcome a thermal-energy barrier for capture. The ZnO film by the UV oxidation at 400 °C was found to be rich in oxygen and deficient in

  1. Direct gap Ge1-ySny alloys: Fabrication and design of mid-IR photodiodes

    Science.gov (United States)

    Senaratne, C. L.; Wallace, P. M.; Gallagher, J. D.; Sims, P. E.; Kouvetakis, J.; Menéndez, J.

    2016-07-01

    Chemical vapor deposition methods were developed, using stoichiometric reactions of specialty Ge3H8 and SnD4 hydrides, to fabricate Ge1-ySny photodiodes with very high Sn concentrations in the 12%-16% range. A unique aspect of this approach is the compatible reactivity of the compounds at ultra-low temperatures, allowing efficient control and systematic tuning of the alloy composition beyond the direct gap threshold. This crucial property allows the formation of thick supersaturated layers with device-quality material properties. Diodes with composition up to 14% Sn were initially produced on Ge-buffered Si(100) featuring previously optimized n-Ge/i-Ge1-ySny/p-Ge1-zSnz type structures with a single defected interface. The devices exhibited sizable electroluminescence and good rectifying behavior as evidenced by the low dark currents in the I-V measurements. The formation of working diodes with higher Sn content up to 16% Sn was implemented by using more advanced n-Ge1-xSnx/i-Ge1-ySny/p-Ge1-zSnz architectures incorporating Ge1-xSnx intermediate layers (x ˜ 12% Sn) that served to mitigate the lattice mismatch with the Ge platform. This yielded fully coherent diode interfaces devoid of strain relaxation defects. The electrical measurements in this case revealed a sharp increase in reverse-bias dark currents by almost two orders of magnitude, in spite of the comparable crystallinity of the active layers. This observation is attributed to the enhancement of band-to-band tunneling when all the diode layers consist of direct gap materials and thus has implications for the design of light emitting diodes and lasers operating at desirable mid-IR wavelengths. Possible ways to engineer these diode characteristics and improve carrier confinement involve the incorporation of new barrier materials, in particular, ternary Ge1-x-ySixSny alloys. The possibility of achieving type-I structures using binary and ternary alloy combinations is discussed in detail, taking into account

  2. Hybridization in a warmer world.

    Science.gov (United States)

    Chunco, Amanda J

    2014-05-01

    Climate change is profoundly affecting the evolutionary trajectory of individual species and ecological communities, in part through the creation of novel species assemblages. How climate change will influence competitive interactions has been an active area of research. Far less attention, however, has been given to altered reproductive interactions. Yet, reproductive interactions between formerly isolated species are inevitable as populations shift geographically and temporally as a result of climate change, potentially resulting in introgression, speciation, or even extinction. The susceptibility of hybridization rates to anthropogenic disturbance was first recognized in the 1930s. To date, work on anthropogenically mediated hybridization has focused primarily on either physical habitat disturbance or species invasion. Here, I review recent literature on hybridization to identify how ecological responses to climate change will increase the likelihood of hybridization via the dissolution of species barriers maintained by habitat, time, or behavior. Using this literature, I identify several cases where novel hybrid zones have recently formed, likely as a result of changing climate. Future research should focus on identifying areas and taxonomic groups where reproductive species interactions are most likely to be influenced by climate change. Furthermore, a better understanding of the evolutionary consequences of climate-mediated secondary contact is urgently needed. Paradoxically, hybridization is both a major conservation concern and an important source of novel genetic and phenotypic variation. Hybridization may therefore both contribute to increasing rates of extinction and stimulate the creation of novel phenotypes that will speed adaptation to novel climates. Predicting which result will occur following secondary contact will be an important contribution to conservation for many species.

  3. Numerical simulation of temperature field and thermal stress field in silicon-based positive-intrinsic-negative photodiode irradiated by multipulsed millisecond laser

    Science.gov (United States)

    Wei, Zhi; Jin, Guangyong; Tan, Yong; Zhao, Hongyu

    2015-10-01

    Laser induced morphological damage have been observed in silicon-based positive-intrinsic-negative photodiode. This paper adopted the methods of the theoretical calculation and finite element numerical simulation to model, then solved the temperature field and thermal stress field in silicon-based positive-intrinsic-negative photodiode irradiated by multipulsed millisecond laser, and researched the features and laws of the temperature field and thermal stress field. As for the thermal-mechanical problem of multipulsed millisecond laser irradiating silicon-based positive-intrinsic-negative photodiode, based on Fourier heat conduction and thermoelasticity theories, we established a two-dimensional axisymmetric mathematical model .Then adopted finite element method to simulate the transient temperature field and thermal stress field. The temperature dependences of the material parameters and the absorption coefficient were taken into account in the calculation. The results indicated that there was the heat accumulation effect when multipulsed millisecond laser irradiating silicon-based positive-intrinsic-negative photodiode. The morphological damage threshold were obtained numerically. The evolution of temperature at the central point of the top surface, the temperature distribution along the radial direction in the end of laser irradiation and the temperature distribution along the axial direction in the end of laser irradiation were considered. Meanwhile, the radial stress, hoop stress, axial stress on the top surface and the R=500μm axis were also considered. The results showed that the morphological damage threshold decreased with the increased of the pulse number. The results of this study have reference significance of researching the thermal and thermal stress effect evolution's features when multipulsed millisecond laser irradiating silicon-based positive-intrinsic-negative photodiode, then revealing the mechanism of interactions between millisecond laser and

  4. Hybridized tetraquarks

    Science.gov (United States)

    Esposito, A.; Pilloni, A.; Polosa, A. D.

    2016-07-01

    We propose a new interpretation of the neutral and charged X , Z exotic hadron resonances. Hybridized-tetraquarks are neither purely compact tetraquark states nor bound or loosely bound molecules but rather a manifestation of the interplay between the two. While meson molecules need a negative or zero binding energy, its counterpart for h-tetraquarks is required to be positive. The formation mechanism of this new class of hadrons is inspired by that of Feshbach metastable states in atomic physics. The recent claim of an exotic resonance in the Bs0 π± channel by the D0 Collaboration and the negative result presented subsequently by the LHCb Collaboration are understood in this scheme, together with a considerable portion of available data on X , Z particles. Considerations on a state with the same quantum numbers as the X (5568) are also made.

  5. Hybridized tetraquarks

    Directory of Open Access Journals (Sweden)

    A. Esposito

    2016-07-01

    Full Text Available We propose a new interpretation of the neutral and charged X,Z exotic hadron resonances. Hybridized-tetraquarks are neither purely compact tetraquark states nor bound or loosely bound molecules but rather a manifestation of the interplay between the two. While meson molecules need a negative or zero binding energy, its counterpart for h-tetraquarks is required to be positive. The formation mechanism of this new class of hadrons is inspired by that of Feshbach metastable states in atomic physics. The recent claim of an exotic resonance in the Bs0π± channel by the D0 Collaboration and the negative result presented subsequently by the LHCb Collaboration are understood in this scheme, together with a considerable portion of available data on X,Z particles. Considerations on a state with the same quantum numbers as the X(5568 are also made.

  6. Amplitude to phase conversion of InGaAs pin photo-diodes for femtosecond lasers microwave signal generation

    CERN Document Server

    Zhang, W; Lours, M; Seidelin, S; Santarelli, G; Coq, Y Le

    2011-01-01

    When a photo-diode is illuminated by a pulse train from a femtosecond laser, it generates microwaves components at the harmonics of the repetition rate within its bandwidth. The phase of these components (relative to the optical pulse train) is known to be dependent on the optical energy per pulse. We present an experimental study of this dependence in InGaAs pin photo-diodes illuminated with ultra-short pulses generated by an Erbium-doped fiber based femtosecond laser. The energy to phase dependence is measured over a large range of impinging pulse energies near and above saturation for two typical detectors, commonly used in optical frequency metrology with femtosecond laser based optical frequency combs. When scanning the optical pulse energy, the coefficient which relates phase variations to energy variations is found to alternate between positive and negative values, with many (for high harmonics of the repetition rate) vanishing points. By operating the system near one of these vanishing points, the typ...

  7. A compact, discrete CsI(Tl) scintillator/Si photodiode gamma camera for breast cancer imaging

    Energy Technology Data Exchange (ETDEWEB)

    Gruber, Gregory J.

    2000-12-01

    Recent clinical evaluations of scintimammography (radionuclide breast imaging) are promising and suggest that this modality may prove a valuable complement to X-ray mammography and traditional breast cancer detection and diagnosis techniques. Scintimammography, however, typically has difficulty revealing tumors that are less than 1 cm in diameter, are located in the medial part of the breast, or are located in the axillary nodes. These shortcomings may in part be due to the use of large, conventional Anger cameras not optimized for breast imaging. In this thesis I present compact single photon camera technology designed specifically for scintimammography which strives to alleviate some of these limitations by allowing better and closer access to sites of possible breast tumors. Specific applications are outlined. The design is modular, thus a camera of the desired size and geometry can be constructed from an array (or arrays) of individual modules and a parallel hole lead collimator for directional information. Each module consists of: (1) an array of 64 discrete, optically-isolated CsI(Tl) scintillator crystals 3 x 3 x 5 mm{sup 3} in size, (2) an array of 64 low-noise Si PIN photodiodes matched 1-to-1 to the scintillator crystals, (3) an application-specific integrated circuit (ASIC) that amplifies the 64 photodiode signals and selects the signal with the largest amplitude, and (4) connectors and hardware for interfacing the module with a motherboard, thereby allowing straightforward computer control of all individual modules within a camera.

  8. A test beam setup for the characterization of the Geiger-mode avalanche photodiode technology for particle tracking

    Energy Technology Data Exchange (ETDEWEB)

    Vilella, E., E-mail: evilella@el.ub.es [Department of Electronics, University of Barcelona (UB), C/Marti i Franques 1, 08028 Barcelona (Spain); Alonso, O. [Department of Electronics, University of Barcelona (UB), C/Marti i Franques 1, 08028 Barcelona (Spain); Trenado, J. [Department of Structure and Constituents of Matter, University of Barcelona (UB), C/Marti i Franques 1, 08028 Barcelona (Spain); Vila, A.; Casanova, R. [Department of Electronics, University of Barcelona (UB), C/Marti i Franques 1, 08028 Barcelona (Spain); Vos, M. [Instituto de Fisica Corpuscular (IFIC), C/Catedratico Jose Beltran 2, 46980 Paterna (Spain); Garrido, L. [Department of Structure and Constituents of Matter, University of Barcelona (UB), C/Marti i Franques 1, 08028 Barcelona (Spain); Dieguez, A. [Department of Electronics, University of Barcelona (UB), C/Marti i Franques 1, 08028 Barcelona (Spain)

    2012-12-01

    It is well known that avalanche photodiodes operated in the Geiger mode above the breakdown voltage offer a virtually infinite gain and time accuracy in the picosecond range that can be used for single photon detection. However, their performance in particle detection still remains unexplored. In this contribution, we are going to expose different steps that we have taken in order to prove the efficiency of the Geiger mode avalanche photodiodes in the aforementioned field. In particular, we will present a setup for the characterization of these sensors in a test beam. The expected results of the test beam at DESY and CERN have been simulated with Geant4 and will also be exposed. -- Highlights: Black-Right-Pointing-Pointer A Setup for characterization of the GAPD technology in a test beam is presented. Black-Right-Pointing-Pointer Two test beams at DESY (6 GeV) and CERN (120 GeV) are already planned at current time. Black-Right-Pointing-Pointer A GAPD array has been designed and fabricated to fit the test beam requirements. Black-Right-Pointing-Pointer We have prepared a test beam setup to minimize the particle multiscattering. Black-Right-Pointing-Pointer The Expected results at DESY and CERN have been simulated with Geant4.

  9. Autocorrelation measurement of femtosecond laser pulses based on two-photon absorption in GaP photodiode

    Energy Technology Data Exchange (ETDEWEB)

    Chong, E. Z.; Watson, T. F.; Festy, F., E-mail: frederic.festy@kcl.ac.uk [Biomaterials, Biomimetics and Biophotonics Division, King' s College London—Dental Institute, SE1 9RT London (United Kingdom)

    2014-08-11

    Semiconductor materials which exhibit two-photon absorption characteristic within a spectral region of interest can be useful in building an ultra-compact interferometric autocorrelator. In this paper, we report on the evidence of a nonlinear absorption process in GaP photodiodes which was exploited to measure the temporal profile of femtosecond Ti:sapphire laser pulses with a tunable peak wavelength above 680 nm. The two-photon mediated conductivity measurements were performed at an average laser power of less than a few tenths of milliwatts. Its suitability as a single detector in a broadband autocorrelator setup was assessed by investigating the nonlinear spectral sensitivity bandwidth of a GaP photodiode. The highly favourable nonlinear response was found to cover the entire tuning range of our Ti:sapphire laser and can potentially be extended to wavelengths below 680 nm. We also demonstrated the flexibility of GaP in determining the optimum compensation value of the group delay dispersion required to restore the positively chirped pulses inherent in our experimental optical system to the shortest pulse width possible. With the rise in the popularity of nonlinear microscopy, the broad two-photon response of GaP and the simplicity of this technique can provide an alternative way of measuring the excitation laser pulse duration at the focal point of any microscopy systems.

  10. Filter-free integrated sensor array based on luminescence and absorbance measurements using ring-shaped organic photodiodes.

    Science.gov (United States)

    Abel, Tobias; Sagmeister, Martin; Lamprecht, Bernhard; Kraker, Elke; Köstler, Stefan; Ungerböck, Birgit; Mayr, Torsten

    2012-12-01

    An optical waveguiding sensor array featuring monolithically integrated organic photodiodes as integrated photo-detector, which simplifies the readout system by minimizing the required parts, is presented. The necessity of any optical filters becomes redundant due to the proposed platform geometry, which discriminates between excitation light and sensing signal. The sensor array is capable of measuring luminescence or absorption, and both sensing geometries are based on the identical substrate. It is demonstrated that background light is virtually non-existent. All sensing and waveguide layers, as well as in- and out-coupling elements are assembled by conventional screen-printing techniques. Organic photodiodes are integrated by layer-by-layer vacuum deposition onto glass or common polymer foils. The universal and simple applicability of this sensor chip is demonstrated by sensing schemes for four different analytes. Relative humidity, oxygen, and carbon dioxide are measured in gas phase using luminescence-based sensor schemes; the latter two analytes are also measured by absorbance-based sensor schemes. Furthermore, oxygen and pH in aqueous media were enabled. The consistency of calibration characteristics extending over different sensor chips is verified.

  11. A compact, discrete CsI(Tl) scintillator/Si photodiode gamma camera for breast cancer imaging

    International Nuclear Information System (INIS)

    Recent clinical evaluations of scintimammography (radionuclide breast imaging) are promising and suggest that this modality may prove a valuable complement to X-ray mammography and traditional breast cancer detection and diagnosis techniques. Scintimammography, however, typically has difficulty revealing tumors that are less than 1 cm in diameter, are located in the medial part of the breast, or are located in the axillary nodes. These shortcomings may in part be due to the use of large, conventional Anger cameras not optimized for breast imaging. In this thesis I present compact single photon camera technology designed specifically for scintimammography which strives to alleviate some of these limitations by allowing better and closer access to sites of possible breast tumors. Specific applications are outlined. The design is modular, thus a camera of the desired size and geometry can be constructed from an array (or arrays) of individual modules and a parallel hole lead collimator for directional information. Each module consists of: (1) an array of 64 discrete, optically-isolated CsI(Tl) scintillator crystals 3 x 3 x 5 mm3 in size, (2) an array of 64 low-noise Si PIN photodiodes matched 1-to-1 to the scintillator crystals, (3) an application-specific integrated circuit (ASIC) that amplifies the 64 photodiode signals and selects the signal with the largest amplitude, and (4) connectors and hardware for interfacing the module with a motherboard, thereby allowing straightforward computer control of all individual modules within a camera

  12. Continuity Controlled Hybrid Automata

    NARCIS (Netherlands)

    Bergstra, J.A.; Middelburg, C.A.

    2004-01-01

    We investigate the connections between the process algebra for hybrid systems of Bergstra and Middelburg and the formalism of hybrid automata of Henzinger et al. We give interpretations of hybrid automata in the process algebra for hybrid systems and compare them with the standard interpretation of

  13. Continuity controlled Hybrid Automata

    NARCIS (Netherlands)

    Bergstra, J.A.; Middelburg, C.A.

    2008-01-01

    We investigate the connections between the process algebra for hybrid systems of Bergstra and Middelburg and the formalism of hybrid automata of Henzinger et al. We give interpretations of hybrid automata in the process algebra for hybrid systems and compare them with the standard interpretation of

  14. Development of high performance Avalanche Photodiodes and dedicated analog systems for HXI/SGD detectors onboard the Astro-H mission

    International Nuclear Information System (INIS)

    Hard X-ray Imager and Soft Gamma-ray Detector are being developed as onboard instruments for the Astro-H mission, which is scheduled for launch in 2014. In both detectors, BGO scintillators play key roles in achieving high sensitivity in low Earth orbit (LEO), by generating active veto signals to reject cosmic-ray events and gamma-ray backgrounds from radio-activated detector materials. In order to maximize background rejection power, it is also important to minimize the energy threshold of this shield. As a readout sensor of weak scintillation light from a number of BGO crystals in a complicated detector system, high performance, reverse-type Avalanche Photodiodes (APDs), with an effective area of 10×10mm2 are being employed, instead of bulky photomultiplier tubes (PMTs).Another advantage of using APDs is their low power consumption, although the relatively low gain of APDs (compared to conventional PMTs) requires dedicated analog circuits for noise suppression. In this paper, we report on the development and performance of APD detectors specifically designed for the Astro-H mission. In addition to APD performance, various environmental tests, including radiation hardness and qualification thermal cycling, will be described in detail. Moreover, a dedicated charge sensitive amplifier and analog filters are newly developed and tested here to optimize the performance of APDs to activate fast veto signals within a few μs from the BGO trigger. We will also report on overall performance testing of a prototype BGO detector system that mimics the data acquisition system onboard Astro-H.

  15. Differential Hybrid Games

    OpenAIRE

    Platzer, André

    2015-01-01

    This article introduces differential hybrid games, which combine differential games with hybrid games. In both kinds of games, two players interact with continuous dynamics. The difference is that hybrid games also provide all the features of hybrid systems and discrete games, but only deterministic differential equations. Differential games, instead, provide differential equations with continuous-time game input by both players, but not the luxury of hybrid games, such as mode switches and d...

  16. The Trace Analysis of DEET in Water using an On-line Preconcentration Column and Liquid Chromatography with UV Photodiode Array Detection

    Science.gov (United States)

    A method for the detection of trace levels of N,N-diethyl-m-toluamide (DEET) in water is discussed. The method utilizes an on-line preconcentration column in series with high performance liquid chromatography (HPLC) and UV photodiode array detection. DEET, a common insect repel...

  17. Description of the Role of Shot Noise in Spectroscopic Absorption and Emission Measurements with Photodiode and Photomultiplier Tube Detectors: Information for an Instrumental Analysis Course

    Science.gov (United States)

    McClain, Robert L.; Wright, John C.

    2014-01-01

    A description of shot noise and the role it plays in absorption and emission measurements using photodiode and photomultiplier tube detection systems is presented. This description includes derivations of useful forms of the shot noise equation based on Poisson counting statistics. This approach can deepen student understanding of a fundamental…

  18. Fabrication of PureGaB Ge-on-Si photodiodes for well-controlled 100-pA-level dark currents

    NARCIS (Netherlands)

    Sammak, A.; Aminian, M.; Qi, L.; De Boer, W.B.; Charbon, E.; Nanver, L.K.

    2014-01-01

    The selective epitaxial growth of Ge-on-Si followed by in-situ deposition of a nm-thin Ga/B layer stack (PureGaB) has previously been shown to be a robust CMOS-compatible process for fabrication of Ge-on-Si photodiodes. In this paper, strategies to improve the control and reproducibility of PureGaB

  19. Quantitative analysis of flavonols, flavones, and flavanones in fruits, vegetables and beverages by high-performance liquid chromatography with photo-diode array and mass spectrometric detection

    DEFF Research Database (Denmark)

    Justesen, U.; Knuthsen, Pia; Leth, Torben

    1998-01-01

    A high-performance liquid chromatographic (HPLC) separation method viith photo-diode array (PDA) and mass spectrometric (MS) detection was developed to determine and quantify flavonols, flavones, and flavanones in fruits, vegetables and beverages. The compounds were analysed as aglycones, obtained...

  20. Analysis of frequency response of high power MUTC photodiodes based on photocurrent-dependent equivalent circuit model.

    Science.gov (United States)

    Li, Jin; Xiong, Bing; Sun, Changzheng; Miao, Di; Luo, Yi

    2015-08-24

    A back-illuminated mesa-structure InGaAs/InP modified uni-traveling-carrier photodiode (MUTC-PD) is fabricated and its frequency response is investigated. A bandwidth of 40 GHz and a saturation photocurrent up to 33 mA are demonstrated. A photocurrent-dependent equivalent circuit model is proposed to analyze the frequency response of the high power MUTC-PDs. The influences of the space-charge screening, self-induced electric field and over-shoot effects are discussed in detail based on the model. Fitted curves obtained from the simple equivalent circuit model are found to be in good agreement with the data measured under different bias voltages and photocurrents.

  1. Analysis and modeling of optical crosstalk in InP-based Geiger-mode avalanche photodiode FPAs

    Science.gov (United States)

    Chau, Quan; Jiang, Xudong; Itzler, Mark A.; Entwistle, Mark; Piccione, Brian; Owens, Mark; Slomkowski, Krystyna

    2015-05-01

    Optical crosstalk is a major factor limiting the performance of Geiger-mode avalanche photodiode (GmAPD) focal plane arrays (FPAs). This is especially true for arrays with increased pixel density and broader spectral operation. We have performed extensive experimental and theoretical investigations on the crosstalk effects in InP-based GmAPD FPAs for both 1.06-μm and 1.55-μm applications. Mechanisms responsible for intrinsic dark counts are Poisson processes, and their inter-arrival time distribution is an exponential function. In FPAs, intrinsic dark counts and cross talk events coexist, and the inter-arrival time distribution deviates from purely exponential behavior. From both experimental data and computer simulations, we show the dependence of this deviation on the crosstalk probability. The spatial characteristics of crosstalk are also demonstrated. From the temporal and spatial distribution of crosstalk, an efficient algorithm to identify and quantify crosstalk is introduced.

  2. Detection of charged particles through a photodiode: design and analysis; Deteccion de particulas cargadas mediante un fotodiodo: diseno y analisis

    Energy Technology Data Exchange (ETDEWEB)

    Angoli, A.; Quirino, L.L.; Hernandez, V.M.; Lopez del R, H.; Mireles, F.; Davila, J.I.; Rios, C.; Pinedo, J.L. [UAEN, UAZ, 98000 Zacatecas (Mexico)]. e-mail: toono4@hotmail.com

    2006-07-01

    This project develops and construct an charge particle detector mean a pin photodiode array, design and analysis using a silicon pin Fotodiodo that generally is used to detect visible light, its good efficiency, size compact and reduced cost specifically allows to its use in the radiation monitoring and alpha particle detection. Here, so much, appears the design of the system of detection like its characterization for alpha particles where one is reported as alpha energy resolution and detection efficiency. The equipment used in the development of work consists of alpha particle a triple source composed of Am-241, Pu-239 and Cm-244 with 5,55 KBq as total activity, Maestro 32 software made by ORTEC, a multi-channel card Triumph from ORTEC and one low activity electroplated uranium sample. (Author)

  3. The device for the poloidal profile measurement of H sub(α)-line emission by photodiode and its calibration

    International Nuclear Information System (INIS)

    The device for the poloidal profile measurement of H sub(α)-line emission has been equipped by photodiode (S1225-5BQ by HAMAMATSU PHOTONICS K.K.) and operational amplifier. The absolute efficiency was calibrated by using He-Ne laser. The device is constructed by 44 channels. The fast type of 8 channels is for the monitor of pellet abration profile. The slow type of 36 channels is for the poloidal profile measurement of H sub(α)-line emission from JFT-2M plasma. The rise time of the fast type and the slow type is about 2.8 μsec and about 350 μsec, respectively. The absolute efficiency of the fast type and the slow type is 72.7 V/mW and 18.2 V/μW, respectively. (author)

  4. Active quench and reset integrated circuit with novel hold-off time control logic for Geiger-mode avalanche photodiodes.

    Science.gov (United States)

    Deng, Shijie; Morrison, Alan P

    2012-09-15

    This Letter presents an active quench-and-reset circuit for Geiger-mode avalanche photodiodes (GM-APDs). The integrated circuit was fabricated using a conventional 0.35 μm complementary metal oxide semiconductor process. Experimental results show that the circuit is capable of linearly setting the hold-off time from several nanoseconds to microseconds with a resolution of 6.5 ns. This allows the selection of the optimal afterpulse-free hold-off time for the GM-APD via external digital inputs or additional signal processing circuitry. Moreover, this circuit resets the APD automatically following the end of the hold-off period, thus simplifying the control for the end user. Results also show that a minimum dead time of 28.4 ns is achieved, demonstrating a saturated photon-counting rate of 35.2 Mcounts/s.

  5. Particle discriminator for the identification of light charged particles with CsI(Tl) scintillator + PIN photodiode detector

    International Nuclear Information System (INIS)

    A particle discriminator exploiting the ballistic deficit effect for pulse shape discrimination has been developed for CsI(Tl) scintillator + PIN photodiode charged-particle detectors. The method is theoretically investigated and it is shown that the figure of merit of the particle separation is mainly governed by the absolute value of the differential quotient of the rise time dependent ballistic deficit. As the actual particle discriminator contains shaping amplifiers, baseline restorer, pile-up rejector and analog-to-digital converters, it directly accepts signals from a charge-sensitive preamplifier, and its outputs deliver the type and the energy of the particles in the form of eight-bit digital codes. The performance of the particle discriminator is characterised by the figure-of-merit measured as a function of the particle energy. (orig.)

  6. Low-cost SWIR sensors: advancing the performance of ROIC-integrated colloidal quantum dot photodiode arrays

    Science.gov (United States)

    Klem, Ethan J. D.; Lewis, Jay; Gregory, Chris; Temple, Dorota; Wijewarnasuriya, Priyalal S.; Dhar, Nibir

    2014-06-01

    RTI has developed a novel photodiode technology based on solution-processed PbS colloidal quantum dots (CQD) capable of providing low-cost, high performance detection across the Vis-SWIR spectral range. The most significant advantages of the CQD technology are ease of fabrication, small pixel size, and extended wavelength range. The devices are fabricated directly onto the ROIC substrate at low temperatures compatible with CMOS, and arrays can be fabricated at wafer scale. We will discuss recent advances in device architecture and processing that result in measured dark currents of 15 nA/cm2 at room temperature and enhanced SWIR responsivity from the UV to ~1.7 μm, compare these results to InGaAs detectors, and present measurements of the CQD detectors temperature dependent dark current.

  7. ZnMgO-based UV photodiodes: a comparison of films grown by spray pyrolysis and MBE

    Science.gov (United States)

    Hierro, A.; Tabares, G.; Lopez-Ponce, M.; Ulloa, J. M.; Kurtz, A.; Muñoz, E.; Marín-Borrás, V.; Muñoz-Sanjose, V.; Chauveau, J. M.

    2016-02-01

    Detecting the UV part of the spectrum is fundamental for a wide range of applications where ZnMgO has the potential to play a central role. The shortest achievable wavelength is a function of the Mg content in the films, which in turn is dependent on the growth technique. Moreover, increasing Mg contents lead to an electrical compensation of the films, which directly affects the responsivity of the photodetectors. In addition, the metal-semiconductor interface and the presence of grain boundaries have a direct impact on the responsivity through different gain mechanisms. In this work, we review the development of ZnMgO UV Schottky photodiodes using molecular beam epitaxy and spray pyrolysis, and we analyze and compare the physical mechanisms underlying the photodetector behavior.

  8. Ratiometric, filter-free optical sensor based on a complementary metal oxide semiconductor buried double junction photodiode.

    Science.gov (United States)

    Yung, Ka Yi; Zhan, Zhiyong; Titus, Albert H; Baker, Gary A; Bright, Frank V

    2015-07-16

    We report a complementary metal oxide semiconductor integrated circuit (CMOS IC) with a buried double junction (BDJ) photodiode that (i) provides a real-time output signal that is related to the intensity ratio at two emission wavelengths and (ii) simultaneously eliminates the need for an optical filter to block Rayleigh scatter. We demonstrate the BDJ platform performance for gaseous NH3 and aqueous pH detection. We also compare the BDJ performance to parallel results obtained by using a slew scanned fluorimeter (SSF). The BDJ results are functionally equivalent to the SSF results without the need for any wavelength filtering or monochromators and the BDJ platform is not prone to errors associated with source intensity fluctuations or sensor signal drift.

  9. New design of InGaAs guided-mode resonance photodiode for SWIR low dark current imaging

    Science.gov (United States)

    Verdun, Michaël.; Portier, Benjamin; Jaworowicz, Katarzyna; Jaeck, Julien; Dupuis, Christophe; Haidar, Riad; Pardo, Fabrice; Pelouard, Jean-Luc

    2016-04-01

    We investigate a full-dielectric guided mode resonant photodiode. It has been designed to enhance the absorption by excitation of several resonances in the SWIR domain. The device consists of an InP/InGaAs/InP P-i-N heterojunction containing an active layer as thin as 90 nm on top of a subwavelength lamellar grating and a gold mirror. We successfully compared the electro-optical characterizations of individual pixels with electro-magnetic simulations. In particular, we observe near perfect collection of the photo-carriers and external quantum efficiency (EQE) of up to 71% around 1.55 μm. Moreover, compared with InGaAs resonator state-of-the-art detector, we show a broader spectral response in the 1.2-1.7 μm range, thus paving the way for SWIR low dark current imaging.

  10. Photoconducting and photocapacitance properties of Al/p-CuNiO{sub 2}-on-p-Si isotype heterojunction photodiode

    Energy Technology Data Exchange (ETDEWEB)

    Elsayed, I.A. [Physics Department, College of Science and Humanitarian Studies, Salman bin Abdulaziz University (Saudi Arabia); Physics Department, Faculty of Science, Damietta University (Egypt); Çavaş, Mehmet [Department of Mechatronics, Faculty of Technology, Firat University, Elazig (Turkey); Gupta, R. [Department of Chemistry, Pittsburg State University, Pittsburg, KS 66762 (United States); Fahmy, T. [Physics Department, College of Science and Humanitarian Studies, Salman bin Abdulaziz University (Saudi Arabia); Polymer Research Group, Physics Department, Faculty of Science, Mansoura University (Egypt); Al-Ghamdi, Ahmed A. [Department of Physics, Faculty of Science, King Abdulaziz University, Jeddah 21589 (Saudi Arabia); Yakuphanoglu, F., E-mail: fyhan@hotmail.com [Department of Physics, Faculty of Science, King Abdulaziz University, Jeddah 21589 (Saudi Arabia); Physics Department, Faculty of Science, Firat University, Elazig (Turkey)

    2015-07-25

    Highlights: • The CuNiO{sub 2} thin film was prepared by sol gel method. • The diode has a high photosensitivity value of 1.02 × 10{sup 3} under 100 mW/cm{sup 2}. • Al/p-Si/CuNiO{sub 2}/Al can used in optoelectronic device applications. - Abstract: Thin film of CuNiO{sub 2} was prepared by sol gel method to fabricate a photodiode. The surface morphology of the CuNiO{sub 2} thin film was investigated by atomic force microscopy (AFM). AFM results indicated that CuNiO{sub 2} film was formed from the nanoparticles and the average size of the nanoparticles was about 115 nm. The optical band gap of CuNiO{sub 2} film was calculated using optical data and was found to be about 2.4 eV. A photodiode having a structure of Al/p-Si/CuNiO{sub 2}/Al was prepared. The electronic parameters such as ideality factor and barrier height of the diode were determined and were obtained to be 8.23 and 0.82 eV, respectively. The interface states properties of the Al/p-Si/CuNiO{sub 2}/Al diode was performed using capacitance–voltage and conductance–voltage characteristics. The series resistance of the Al/p-Si/CuNiO{sub 2}/Al photo diode was observed to be decreasing with increasing frequency. The diode exhibited a photoconducting behavior with a high photosensitivity value of 1.02 × 10{sup 3} under 100 mW/cm{sup 2}. The obtained results indicate that Al/p-Si/CuNiO{sub 2}/Al can used in optoelectronic device applications.

  11. Participation to the study of the electromagnetic calorimeter calibration for the CMS experiment and to the study of avalanche photodiodes; Participation a l'etude de la calibration du calorimetre electromagnetique de l'experience CMS et a l'etude de photodiodes a avalanche

    Energy Technology Data Exchange (ETDEWEB)

    Da Ponte Puill, V

    1999-12-13

    The electromagnetic calorimeter CMS (Compact Muon Solenoid) has been chosen to study the Higgs boson production. This calorimeter will be constituted of more than 80000 lead tungstate scintillating crystals radiation resistant. Photodiodes have been especially optimized to detect the scintillating light of these crystals: avalanche photodiodes (APD). This thesis includes two separate parts. A first part deals with the APD submitted to high rate of radiations and tested in the Ulysse reactor of the Cea. The second part deals with the calorimeter calibration. (A.L.B.)

  12. Hybrid rocket propulsion

    Science.gov (United States)

    Holzman, Allen L.

    1993-01-01

    Topics addressed are: (1) comparison of the theoretical impulses; (2) comparison of the density-specific impulses; (3) general propulsion system features comparison; (4) hybrid systems, booster applications; and (5) hybrid systems, upper stage propulsion applications.

  13. Hybrid Management in Hospitals

    DEFF Research Database (Denmark)

    Byrkjeflot, Haldor; Jespersen, Peter Kragh

    2010-01-01

    Artiklen indeholder et litteraturbaseret studium af ledelsesformer i sygehuse, hvor sundhedsfaglig ledelse og generel ledelse mikses til hybride ledelsesformer......Artiklen indeholder et litteraturbaseret studium af ledelsesformer i sygehuse, hvor sundhedsfaglig ledelse og generel ledelse mikses til hybride ledelsesformer...

  14. From hybrid swarms to swarms of hybrids

    Science.gov (United States)

    The introgression of modern humans (Homo sapiens) with Neanderthals 40,000 YBP after a half-million years of separation, may have led to the best example of a hybrid swarm on earth. Modern trade and transportation in support of the human hybrids has continued to introduce additional species, genotyp...

  15. RESEARCHES ON THE VEGETATION PERIOD OF SOME MAIZE HYBRIDS ASESSED BY THE NUMBER OF LEAVES

    Directory of Open Access Journals (Sweden)

    IVONA DAVID

    2013-12-01

    Full Text Available For to define more accurately the precocity group of some maize hybrids depending on vegetation conditions from maize growing area, different researches analyzed the number of leaves as invariable factor dependent on hybrid. In this writing we offer dates about number of leaves for ten maize hybrids cultivated in experimental field from Varieties Testing Centre, Targoviste. Differences between hybrids were clearly and for this reason we can classify these hybrids in two precocity groups (medium early or late.

  16. Resin Catalyst Hybrids

    Institute of Scientific and Technical Information of China (English)

    S. Asaoka

    2005-01-01

    @@ 1Introduction: What are resin catalyst hybrids? There are typically two types of resin catalyst. One is acidic resin which representative is polystyrene sulfonic acid. The other is basic resin which is availed as metal complex support. The objective items of this study on resin catalyst are consisting of pellet hybrid, equilibrium hybrid and function hybrid of acid and base,as shown in Fig. 1[1-5].

  17. Mesoscale hybrid calibration artifact

    Science.gov (United States)

    Tran, Hy D.; Claudet, Andre A.; Oliver, Andrew D.

    2010-09-07

    A mesoscale calibration artifact, also called a hybrid artifact, suitable for hybrid dimensional measurement and the method for make the artifact. The hybrid artifact has structural characteristics that make it suitable for dimensional measurement in both vision-based systems and touch-probe-based systems. The hybrid artifact employs the intersection of bulk-micromachined planes to fabricate edges that are sharp to the nanometer level and intersecting planes with crystal-lattice-defined angles.

  18. Polymer waveguide based hybrid opto-electric integration technology

    Science.gov (United States)

    Mao, Jinbin; Deng, Lingling; Jiang, Xiyan; Ren, Rong; Zhai, Yumeng; Wang, Jin

    2014-10-01

    While monolithic integration especially based on InP appears to be quite an expensive solution for optical devices, hybrid integration solutions using cheaper material platforms are considered powerful competitors because of the high freedom of design, yield optimization and relative cost-efficiency. Among them, the polymer planar-lightwave circuit (PLC) technology is regarded attractive as polymer offers the potential of fairly simple and low-cost fabrication, and of low-cost packaging. In our work, polymer PLC was fabricated by using the standard reactive ion etching (RIE) technique, while other active and passive devices can be integrated on the polymer PLC platform. Exemplary polymer waveguide devices was a 13-channel arrayed waveguide grating (AWG) chip, where the central channel cross-talk was below -30dB and the polarization dependent frequency shift was mitigated by inserting a half wave plate. An optical 900 hybrid was also realized with one 2×4 multi-mode interferometer (MMI). The excess insertion losses are below 4dB for the C-band, while the transmission imbalance is below 1.2dB. When such an optical hybrid was integrated vertically with mesa-type photodiodes, the responsivity of the individual PD was around 0.06 A/W, while the 3 dB bandwidth reaches 24 ~ 27 GHz, which is sufficient for 100Gbit/s receivers. Another example of the hybrid integration was to couple the polymer waveguides to fiber by applying fiber grooves, whose typical loss value was 0.2 dB per-facet over a broad spectral range from 1200-1600 nm.

  19. Hybrid quantum information processing

    Energy Technology Data Exchange (ETDEWEB)

    Furusawa, Akira [Department of Applied Physics, School of Engineering, The University of Tokyo (Japan)

    2014-12-04

    I will briefly explain the definition and advantage of hybrid quantum information processing, which is hybridization of qubit and continuous-variable technologies. The final goal would be realization of universal gate sets both for qubit and continuous-variable quantum information processing with the hybrid technologies. For that purpose, qubit teleportation with a continuousvariable teleporter is one of the most important ingredients.

  20. Hybrid quantum information processing

    Science.gov (United States)

    Furusawa, Akira

    2014-12-01

    I will briefly explain the definition and advantage of hybrid quantum information processing, which is hybridization of qubit and continuous-variable technologies. The final goal would be realization of universal gate sets both for qubit and continuous-variable quantum information processing with the hybrid technologies. For that purpose, qubit teleportation with a continuousvariable teleporter is one of the most important ingredients.

  1. Hybridization and extinction.

    Science.gov (United States)

    Todesco, Marco; Pascual, Mariana A; Owens, Gregory L; Ostevik, Katherine L; Moyers, Brook T; Hübner, Sariel; Heredia, Sylvia M; Hahn, Min A; Caseys, Celine; Bock, Dan G; Rieseberg, Loren H

    2016-08-01

    Hybridization may drive rare taxa to extinction through genetic swamping, where the rare form is replaced by hybrids, or by demographic swamping, where population growth rates are reduced due to the wasteful production of maladaptive hybrids. Conversely, hybridization may rescue the viability of small, inbred populations. Understanding the factors that contribute to destructive versus constructive outcomes of hybridization is key to managing conservation concerns. Here, we survey the literature for studies of hybridization and extinction to identify the ecological, evolutionary, and genetic factors that critically affect extinction risk through hybridization. We find that while extinction risk is highly situation dependent, genetic swamping is much more frequent than demographic swamping. In addition, human involvement is associated with increased risk and high reproductive isolation with reduced risk. Although climate change is predicted to increase the risk of hybridization-induced extinction, we find little empirical support for this prediction. Similarly, theoretical and experimental studies imply that genetic rescue through hybridization may be equally or more probable than demographic swamping, but our literature survey failed to support this claim. We conclude that halting the introduction of hybridization-prone exotics and restoring mature and diverse habitats that are resistant to hybrid establishment should be management priorities. PMID:27468307

  2. Spoof Plasmon Hybridization

    CERN Document Server

    Zhang, Jingjing; Luo, Yu; Shen, Xiaopeng; Maier, Stefan A; Cui, Tie Jun

    2016-01-01

    Plasmon hybridization between closely spaced nanoparticles yields new hybrid modes not found in individual constituents, allowing for the engineering of resonance properties and field enhancement capabilities of metallic nanostructure. Experimental verifications of plasmon hybridization have been thus far mostly limited to optical frequencies, as metals cannot support surface plasmons at longer wavelengths. Here, we introduce the concept of 'spoof plasmon hybridization' in highly conductive metal structures and investigate experimentally the interaction of localized surface plasmon resonances (LSPR) in adjacent metal disks corrugated with subwavelength spiral patterns. We show that the hybridization results in the splitting of spoof plasmon modes into bonding and antibonding resonances analogous to molecular orbital rule and plasmonic hybridization in optical spectrum. These hybrid modes can be manipulated to produce enormous field enhancements (larger than 5000) by tuning the separation between disks or alte...

  3. Infrared to visible image up-conversion using optically addressed spatial light modulator utilizing liquid crystal and InGaAs photodiodes

    Energy Technology Data Exchange (ETDEWEB)

    Solodar, A., E-mail: asisolodar@gmail.com; Arun Kumar, T.; Sarusi, G.; Abdulhalim, I. [Department of Electro-Optics Engineering and The Ilse Katz Institute for Nanoscale Science and Technology, Ben Gurion University of the Negev, Beer Sheva 84105 (Israel)

    2016-01-11

    Combination of InGaAs/InP heterojunction photodetector with nematic liquid crystal (LC) as the electro-optic modulating material for optically addressed spatial light modulator for short wavelength infra-red (SWIR) to visible light image conversion was designed, fabricated, and tested. The photodetector layer is composed of 640 × 512 photodiodes array based on heterojunction InP/InGaAs having 15 μm pitch on InP substrate and with backside illumination architecture. The photodiodes exhibit extremely low, dark current at room temperature, with optimum photo-response in the SWIR region. The photocurrent generated in the heterojunction, due to the SWIR photons absorption, is drifted to the surface of the InP, thus modulating the electric field distribution which modifies the orientation of the LC molecules. This device can be attractive for SWIR to visible image upconversion, such as for uncooled night vision goggles under low ambient light conditions.

  4. About opportunity of development of photo-diodes capable to work at 2326 sm-1 from carbon black filled polystyrene

    International Nuclear Information System (INIS)

    Full text: In essential progress in nano-electronics have resulted works connected with creation of active components of electronic engineering from cluster forms of carbon (CFC). For example, physical principles of reception of transistor effect from an individual molecule fullerene C60 are already discussed, results of development of photo-diodes from system poly-thiophene - fullerene C60 also are submitted. CFC usually synthesize separately. However, our researches have shown an opportunity of compulsory formation of some part of agglomerates of carbon black in final and intermediate products fullerene C60 during preparation of composites of polystyrene (PS) at filling by its usual amorphous carbon black. Roentgenograms of initial composites, i.e. carbon black and PS, had only amorphous pieces, without what or crystal peaks whereas the roentgenogram of a composite had set of new peaks connected with crystallization. Calculations have shown conformity to within 1-2 % of size of inter plane distance of the most intensive peak in the roentgenogram of a composite 0.3599 nm with that distance for radius of molecule C60 which makes 0.357 nm. IR-spectra of a composite with such strips of absorption as: 1434; 1174; 500 and 1650; 1577 sm-1 practically confirm presence of unary and double communications between atoms of carbon, characteristic for molecule C60. The inter plane distance under the roentgenogram of a composite equal 0.33588 nm to within 1-2 % corresponds to literary size of interlayer distance in such microtube equal 0.34 nm. Actually the technology of preparation applied by us in the given work, has resulted in formation multilayered in structure of this material. It agrees to data ESR of spectroscopy in a boundary layer of a composite ions H3O2 , and H5O2 are formed or donor-acceptor complexes, or with weak communication, for example, (H2O)2 or with strong communication, for example. Results dielectric, ESR and IR-spectroscopy allow to count possible

  5. Conception d'un circuit d'etouffement pour photodiodes a avalanche en mode geiger pour integration heterogene 3d

    Science.gov (United States)

    Boisvert, Alexandre

    Le Groupe de Recherche en Appareillage Medical de Sherbrooke (GRAMS) travaille actuellement sur un programme de recherche portant sur des photodiodes a avalanche mono-photoniques (PAMP) operees en mode Geiger en vue d'une application a la tomographie d'emission par positrons (TEP). Pour operer dans ce mode; la PAMP, ou SPAD selon l'acronyme anglais (Single Photon Avalanche Diode), requiert un circuit d'etouffement (CE) pour, d'une part, arreter l'avalanche pouvant causer sa destruction et, d'autre part. la reinitialiser en mode d'attente d'un nouveau photon. Le role de ce CE comprend egalement une electronique de communication vers les etages de traitement avance de signaux. La performance temporelle optimale du CE est realisee lorsqu'il est juxtapose a la PAMP. Cependant, cela entraine une reduction de la surface photosensible ; un element crucial en imagerie. L'integration 3D, a base d'interconnexions verticales, offre une solution elegante et performante a cette problematique par l'empilement de circuits integres possedant differentes fonctions (PAMP, CE et traitement avance de signaux). Dans l'approche proposee, des circuits d'etouffement de 50 pm x 50 pm realises sur une technologie CMOS 130 mn 3D Tezzaron, contenant chacun 112 transistors, sont matrices afin de correspondre a une matrice de PAMP localisee sur une couche electronique superieure. Chaque circuit d'etouffement possede une gigue temporelle de 7,47 ps RMS selon des simulations faites avec le logiciel Cadence. Le CE a la flexibilite d'ajuster les temps d'etouffement et de recharge pour la PAMP tout en presentant une faible consommation de puissance (~ 0,33 mW a 33 Mcps). La conception du PAMP necessite de supporter des tensions superieures aux 3,3 V de la technologie. Pour repondre a ce probleme, des transistors a drain etendu (DEMOS) ont ete realises. En raison de retards de production par Ies fabricants, les circuits n'ont pu etre testes physiquement par des mesures. Les resultats de ce memoire

  6. Development of long-wavelength avalanche photodiodes and vertical-cavity lasers for epitaxial integration as a vertical-cavity photon number amplifier

    Science.gov (United States)

    Huntington, Andrew Sumika

    The goal of this research was to develop technology for building a vertical-geometry photon number amplifier (vertical PNA) that operates at a wavelength in the low-absorption window for optical fibers near 1.55 mum. An optical amplifier of this design would provide electrically-tappable low-noise polarization-independent optical amplification of laser pulses and serve as a stepping stone toward development of a tunable amplifying wavelength converter. The vertical PNA design consists of a multiple active region (MAR) VCSEL integrated with an avalanche photodiode of the separate absorption, charge, and multiplication layer design (SACM APD): the VCSEL is intended to operate continuous wave (CW), modulated by the APD. Both components were selected for their high gain: in excess of 10 electrons out per photon in for the APD, and slightly more than 1 photon out per electron in for the MAR VCSEL under ideal circumstances. In working toward the vertical PNA, significant technical challenges were addressed: (1) Development of a long-wavelength MAR VCSEL capable of high-temperature CW operation. Although this goal was never achieved, efforts directed to this end resulted in an investigation of basic material science issues that are vital to future improvements of the device. Better DBR and active region designs were developed, the overall thermal impedance of the structure was reduced significantly, a rudimentary optical aperture compatible with InP-based materials was tested, and loss estimates for the device were put on solid ground. (2) Development of a low-noise SACM APD capable of modulating the MAR VCSEL at high speed. Here the vital relationships between growth conditions, material quality, and APD performance were established. Other achievements include demonstration of highly uniform arrays of these devices, extremely low-noise operation, and the largest area long-wavelength APDs ever reported. (3) Successful demonstration of the epitaxial integration of these

  7. Analysis of lichen substances including triterpenoids by high performance liquid chromatography with a differential refractive index detector and a photodiode array detector

    Institute of Scientific and Technical Information of China (English)

    Hikari SATO; Kojiro HARA; Masashi KOMINE; Yoshikazu YAMAMOTO

    2011-01-01

    A new method for analysis of lichen triterpenoids was established using high performance liquid chromatography with the combination of a differential refractive index detector (RID) and a photodiode array detector (PDA).It is proved that this method was convenient to detect and identify aromatic and aliphatic lichen substances; it enabled quantitative analysis of substances having no or less absorption of ultraviolet rays such as triterpenoids.In addition,they can be measured in high accuracy compared with the TLC method.

  8. High-responsivity vertical-illumination Si/Ge uni-traveling-carrier photodiodes based on silicon-on-insulator substrate

    OpenAIRE

    Chong Li; ChunLai Xue; Zhi Liu; Hui Cong; Buwen Cheng; Zonghai Hu; Xia Guo; Wuming Liu

    2016-01-01

    Si/Ge uni-traveling carrier photodiodes exhibit higher output current when space-charge effect is overcome and the thermal effects is suppressed. High current is beneficial for increasing the dynamic range of various microwave photonic systems and simplifying high-bit-rate digital receivers in many applications. From the point of view of packaging, detectors with vertical-illumination configuration can be easily handled by pick-and-place tools and are a popular choice for making photo-receive...

  9. First Avalanche-photodiode camera test (FACT): A novel camera using G-APDs for the observation of very high-energy {gamma}-rays with Cherenkov telescopes

    Energy Technology Data Exchange (ETDEWEB)

    Braun, I. [ETH Zurich, CH-8093 Zurich (Switzerland); Commichau, S.C. [ETH Zurich, CH-8093 Zurich (Switzerland)], E-mail: commichau@phys.ethz.ch; Rissi, M. [ETH Zurich, CH-8093 Zurich (Switzerland); Backes, M. [Dortmund University of Technology, D-44221 Dortmund (Germany); Biland, A. [ETH Zurich, CH-8093 Zurich (Switzerland); Bretz, T. [University of Wuerzburg, D-97074 Wuerzburg (Germany); Britvitch, I.; Commichau, V.; Gunten, H. von; Hildebrand, D.; Horisberger, U.; Kranich, D. [ETH Zurich, CH-8093 Zurich (Switzerland); Lorenz, E. [ETH Zurich, CH-8093 Zurich (Switzerland); Max-Planck-Institut fuer Physik, D-80805 Muenchen (Germany); Lustermann, W. [ETH Zurich, CH-8093 Zurich (Switzerland); Mannheim, K. [University of Wuerzburg, D-97074 Wuerzburg (Germany); Neise, D. [Dortmund University of Technology, D-44221 Dortmund (Germany); Pauss, F. [ETH Zurich, CH-8093 Zurich (Switzerland); Pohl, M. [University of Geneva, CH-1211 Geneva (Switzerland); Renker, D. [Paul Scherrer Institut (PSI) Villigen, CH-5232 Villigen (Switzerland); Rhode, W. [Dortmund University of Technology, D-44221 Dortmund (Germany)] (and others)

    2009-10-21

    We present a project for a novel camera using Geiger-mode Avalanche Photodiodes (G-APDs), to be installed in a small telescope (former HEGRA CT3) on the MAGIC site in La Palma (Canary Island, Spain). This novel type of semiconductor photon detector provides several superior features compared to conventional photomultiplier tubes (PMTs). The most promising one is a much higher Photon Detection Efficiency.

  10. Reducing DMU fuel consumption by means of hybrid energy storage

    OpenAIRE

    Dittus, Holger; Hülsebusch, Dirk; Ungethüm, Jörg

    2011-01-01

    Purpose: This paper discusses a hybrid energy storage concept and its control strategy for hydro-mechanical DMUs. The hybrid energy storage consists of double layer capacitors and batteries. The new concept aims on reducing fuel consumption and avoiding unhealthy emissions during idling in station area. Methods: Development of a hybrid propulsion concept and control strategy requires adequate methods for modeling system behavior. The simulation environment Dymola is ...

  11. Split-gene system for hybrid wheat seed production

    OpenAIRE

    Kempe, Katja; Rubtsova, Myroslava; Gils, Mario

    2014-01-01

    Global food security demands the development of new technologies to increase and secure cereal production on finite arable land without increasing water and fertilizer use. Although the use of heterosis through hybrid breeding has produced tremendous economic benefits in worldwide crop production, less than 1% of the global wheat area is planted with hybrids. One of the greatest bottlenecks in breeding hybrid wheat is the lack of an efficient sterility system to block self-pollination. This r...

  12. High-responsivity vertical-illumination Si/Ge uni-traveling-carrier photodiodes based on silicon-on-insulator substrate

    Science.gov (United States)

    Li, Chong; Xue, Chunlai; Liu, Zhi; Cong, Hui; Cheng, Buwen; Hu, Zonghai; Guo, Xia; Liu, Wuming

    2016-06-01

    Si/Ge uni-traveling carrier photodiodes exhibit higher output current when space-charge effect is overcome and the thermal effects is suppressed. High current is beneficial for increasing the dynamic range of various microwave photonic systems and simplifying high-bit-rate digital receivers in many applications. From the point of view of packaging, detectors with vertical-illumination configuration can be easily handled by pick-and-place tools and are a popular choice for making photo-receiver modules. However, vertical-illumination Si/Ge uni-traveling carrier (UTC) devices suffer from inter-constraint between high speed and high responsivity. Here, we report a high responsivity vertical-illumination Si/Ge UTC photodiode based on a silicon-on-insulator substrate. When the transmission of the monolayer anti-reflection coating was maximum, the maximum absorption efficiency of the devices was 1.45 times greater than the silicon substrate owing to constructive interference. The Si/Ge UTC photodiode had a dominant responsivity at 1550 nm of 0.18 A/W, a 50% improvement even with a 25% thinner Ge absorption layer.

  13. High-responsivity vertical-illumination Si/Ge uni-traveling-carrier photodiodes based on silicon-on-insulator substrate

    CERN Document Server

    Li, Chong; Liu, Zhi; Cong, Hui; Cheng, Buwen; Guo, Xia; Liu, Wuming

    2015-01-01

    Si/Ge uni-traveling carrier photodiodes exhibit higher output current when space-charge effects are overcome and thermal effects are suppressed, which is highly beneficial for increasing the dynamic range of various microwave photonic systems and simplifying high-bit-rate digital receivers in different applications. From the point of view of packaging, detectors with vertical-illumination configuration can be easily handled by pick-and-place tools and are a popular choice for making photo-receiver modules. However, vertical-illumination Si/Ge uni-traveling carrier (UTC) devices suffer from inter-constraint between high speed and high responsivity. Here, we report a high responsivity vertical-illumination Si/Ge UTC photodiode based on a silicon-on-insulator substrate. The maximum absorption efficiency of the devices was 2.4 times greater than the silicon substrate owing to constructive interference. The Si/Ge UTC photodiode was successfully fabricated and had a dominant responsivity at 1550 nm of 0.18 A/W, a 5...

  14. Hybrid dynamical systems observation and control

    CERN Document Server

    Defoort, Michael

    2015-01-01

    This book is a collection of contributions defining the state of current knowledge and new trends in hybrid systems – systems involving both continuous dynamics and discrete events – as described by the work of several well-known groups of researchers. Hybrid Dynamical Systems presents theoretical advances in such areas as diagnosability, observability and stabilization for various classes of system. Continuous and discrete state estimation and self-triggering control of nonlinear systems are advanced. The text employs various methods, among them, high-order sliding modes, Takagi–Sugeno representation and sampled-data switching to achieve its ends. The many applications of hybrid systems from power converters to computer science are not forgotten; studies of flexible-joint robotic arms and – as representative biological systems – the behaviour of the human heart and vasculature, demonstrate the wide-ranging practical significance of control in hybrid systems. The cross-disciplinary origins of study ...

  15. S 400 BlueHYBRID. First hybrid vehicle with Li-ion technology; S 400 BlueHYBRID. Erstes Hybridfahrzeug mit Li-Ionen-Technologie

    Energy Technology Data Exchange (ETDEWEB)

    Vollrath, Oliver; Armstrong, Neil; Schenk, Juergen; Bitsche, Otmar; Lamm, Arnold [Daimler AG, Stuttgart (Germany)

    2009-07-01

    Mercedes Benz advances the electrification of the drive strand in all performance classes and in all models from the start-stop system till to the full hybrid. Thereby, the S 400 BlueHYBRID presents the first Mercedes-Benz hybrid. Equipped with the characteristics of a start-stop system, with a recovery of the brake energy and with an electrical support of the drive, this hybrid obtains a saving of the consumption of approximately 20 %. By means of the design of the components and by means of the selection of a standard installation size, all hybrid-specific construction units in the vehicle porch could be arranged. Here, a special role comes to the used battery technology, since it became possible to arrange the hybrid battery in the size and the building area of a conventional starter battery accordingly.

  16. Flexible planar microfluidic chip employing a light emitting diode and a PIN-photodiode for portable flow cytometers.

    Science.gov (United States)

    Kettlitz, Siegfried W; Valouch, Sebastian; Sittel, Wiebke; Lemmer, Uli

    2012-01-01

    Detection of fluorescence particles is a key method of flow cytometry. We evaluate the performance of a design for a microfluidic fluorescence particle detection device. Due to the planar design with low layer thicknesses, we avoid optical components such as lenses or dichroic mirrors and substitute them with a shadow mask and colored film filters. A commercially available LED is used as the light source and a PIN-photodiode as detector. This design approach reduces component cost and power consumption and enables supplying the device with power from a standard USB port. From evaluation of this design, we obtain a maximum particle detection frequency of up to 600 particles per second at a sensitivity of better than 4.7 × 10(5) MESF (molecules of equivalent soluble fluorochrome) measured with particles for FITC sensitivity calibration. Lowering the flow rate increases the instrument sensitivity by an order of magnitude enabling the detection of particles with 4.5 × 10(4) MESF. PMID:22086498

  17. Ge/graded-SiGe multiplication layers for low-voltage and low-noise Ge avalanche photodiodes on Si

    Science.gov (United States)

    Miyasaka, Yuji; Hiraki, Tatsurou; Okazaki, Kota; Takeda, Kotaro; Tsuchizawa, Tai; Yamada, Koji; Wada, Kazumi; Ishikawa, Yasuhiko

    2016-04-01

    A new structure is examined for low-voltage and low-noise Ge-based avalanche photodiodes (APDs) on Si, where a Ge/graded-SiGe heterostructure is used as the multiplication layer of a separate-absorption-carrier-multiplication structure. The Ge/SiGe heterojunction multiplication layer is theoretically shown to be useful for preferentially enhancing impact ionization for photogenerated holes injected from the Ge optical-absorption layer via the graded SiGe, reflecting the valence band discontinuity at the Ge/SiGe interface. This property is effective not only for the reduction of operation voltage/electric field strength in Ge-based APDs but also for the reduction of excess noise resulting from the ratio of the ionization coefficients between electrons and holes being far from unity. Such Ge/graded-SiGe heterostructures are successfully fabricated by ultrahigh-vacuum chemical vapor deposition. Preliminary pin diodes having a Ge/graded-SiGe multiplication layer act reasonably as photodetectors, showing a multiplication gain larger than those for diodes without the Ge/SiGe heterojunction.

  18. CsI(Tl) photon detector with PIN photodiode readout for a K submu sub 3 T-violation experiment

    CERN Document Server

    Dementyev, D V; Ivashkin, A P; Khabibullin, M M; Khotyantsev, A N; Kudenko, Yu G; Mineev, O V; Aoki, M; Imazato, J; Kuno, Y; Baker, T; Blecher, M; Depommier, P; Hasinoff, M D; Igarashi, Y; Ikeda, T; MacDonald, J A; Mindas, C R; Rangacharyulu, C; Shimizu, S; Yokoi, T

    2000-01-01

    The pi sup 0 detector constructed for the T-violation search experiment E246 at KEK is described. It consists of 768 CsI(Tl) crystals with PIN photodiode readout. The crystals are assembled in a tight barrel with holes for muons entering the magnetic spectrometer. The design and performance of the calorimeter are presented. The average light yield of 11000 p.e./MeV and average equivalent noise level of 63 keV (bench test) were obtained for the CsI(Tl) modules used in the calorimeter. The coherent noise was found to be about 11 keV per a module. A readout electronics has been specifically developed for the high counting rate environment of the experiment. A pi sup 0 invariant mass resolution of 9.9 MeV (sigma) was obtained for the whole detector, including regions around the muon holes. A time resolution of 3.8 ns (rms) was achieved in the photon energy range of 10-200 MeV.

  19. Pulse oximeter using a gain-modulated avalanche photodiode operated in a pseudo lock-in light detection mode

    Science.gov (United States)

    Miyata, Tsuyoshi; Iwata, Tetsuo; Araki, Tsutomu

    2006-01-01

    We propose a reflection-type pulse oximeter, which employs two pairs of a light-emitting diode (LED) and a gated avalanche photodiode (APD). One LED is a red one with an emission wavelength λ = 635 nm and the other is a near-infrared one with that λ = 945 nm, which are both driven with a pulse mode at a frequency f (=10 kHz). Superposition of a transistor-transistor-logic (TTL) gate pulse on a direct-current (dc) bias, which is set so as not exceeding the breakdown voltage of each APD, makes the APD work in a gain-enhanced operation mode. Each APD is gated at a frequency 2f (=20 kHz) and its output signal is fed into a laboratory-made lock-in amplifier that works in synchronous with the pulse modulation signal of each LED at a frequency f (=10 kHz). A combination of the gated APD and the lock-in like signal detection scheme is useful for the reflection-type pulse oximeter thanks to the capability of detecting a weak signal against a large background (BG) light.

  20. Monolithically integrated avalanche photodiode receiver in 0.35 μm bipolar complementary metal oxide semiconductor

    Science.gov (United States)

    Jukić, Tomislav; Steindl, Bernhard; Enne, Reinhard; Zimmermann, Horst

    2015-11-01

    We present the first optoelectronic integrated bipolar complementary metal oxide semiconductor (BiCMOS) receiver chip with an avalanche photodiode (APD). A large 200-μm-diameter APD connected to a high-speed transimpedance amplifier designed for a 2-Gbps optical wireless communication system is proposed. The complete chip was realized in a 0.35-μm silicon BiCMOS technology. Due to the thick intrinsic zone and multiplication gain, the responsivity of the APD reaches a value of up to 120 A/W for a wavelength of 675 nm. Furthermore, the capacitance of the APD is <500 fF for reverse bias voltages above 18 V. The receiver has a supply voltage of 3.3 V with a current consumption of 76 mA. The delivered 50-Ω single-ended output swing is 550 mVpp and the overall transimpedance is 260 kΩ with 1.02-GHz bandwidth. The achieved data rate is 2 Gbps with a sensitivity of -30.3 dBm at a bit error rate <10-9.