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Sample records for area hybrid photodiodes

  1. Development of large area hybrid photodiodes for the LHCb ring imaging Cherenkov detectors

    CERN Document Server

    Braem, André; Dulinski, W; Filthaut, Frank; Go, A; Joram, C; Lion, G; Séguinot, Jacques; Weilhammer, Peter; Wicht, P; Ypsilantis, Thomas

    1999-01-01

    We report on the development of large area hybrid photodiodes (HPD) which are one of the proposed photodetectors for the RICH counters of the LHCb experiment. The HPD's consist of a cylindrical vacuum envelope of 127 mm diameter capped with a spherical borosilicate UV- glass entrance window. Focusing electrodes demagnify the image on a silicon detector of 50 mm diameter comprising 2048 pads with a surface of 1 mm/sup 2/ each. The analogue readout electronics is integrated in the vacuum tube. As an intermediate step a HPD with a UV sensitive CsI photocathode has been produced which allowed to verify the electron optics of the HPD. A large UHV evaporation plant for the production of HPD's with visible light transmissive bialkali photocathodes (K/sub 2/CsSb) has been built and successfully operated. The evaporation process is optimized for maximum quantum efficiency and life time of the photocathodes. A cold indium sealing technique developed for a minimum thermal load of the photocathode and the silicon sensor ...

  2. Cherenkov rings from aerogel detected by four large-area hybrid photodiodes

    CERN Document Server

    Bellunato, T F; Buzykaev, A R; Calvi, M; Chesi, Enrico Guido; Danilyuk, A F; Easo, S; Jolly, S; Joram, C; Kravchenko, E A; Liko, D; Matteuzzi, C; Musy, M; Negri, P; Neufeld, N; Onuchin, A P; Séguinot, Jacques; Wotton, S

    2003-01-01

    We report on the results obtained using thick samples of silica aerogel as radiators for a Ring Imaging Cherenkov counter. Four large-diameter hybrid photodiodes with 2048 channels have been used as photon detectors. Pions and protons with momenta ranging from 6 to 10 GeV/c were separated and identified. The number of photoelectrons and the radius of the Cherenkov rings together with the Cherenkov angle resolution were measured. A comparison with a simulation program based on GEANT4 is discussed.

  3. Development of large area hybrid photodiodes for the LHCb ring imaging Cherenkov detectors

    International Nuclear Information System (INIS)

    The authors report on the development of large area hybrid photo diodes (HPD) which are one of the proposed photodetectors for the RICH counters of the LHCb experiment. The HPD's consist of a cylindrical vacuum envelope of 127 mm diameter capped with a spherical vacuum envelope of 127 mm diameter capped with a spherical borosilicate UV-glass entrance window. Focusing electrodes demagnify the image on a silicon detector of 50 mm diameter comprising 2048 pads with a surface of 1 mm2 each. The analogue readout electronics is integrated in the vacuum tube. As an intermediate step a HPD with a UV sensitive CsI photocathode has been produced which allowed to verify the electron optics of the HPD. A large UHV evaporation plant for the production of HPD's with visible light transmissive bialkali photocathodes (K2CsSb) has been built and successfully operated. The evaporation process is optimized for maximum quantum efficiency and life time of the photocathodes. A cold Indium sealing technique developed for a minimum thermal load of the photocathode and the silicon sensor has proven to provide excellent vacuum tightness

  4. Development of large area hybrid photodiodes for the LHCb ring imaging Cherenkov detectors

    CERN Document Server

    Chesi, Enrico Guido; Go, A; Joram, C; Séguinot, Jacques; Ypsilantis, Thomas; Ypsilantis, Thomas

    1998-01-01

    98-037 We report on the development of large area hybrid photo diodes (HPD) which are one of the proposed photodetectors for the RICH counters of the LHCb experiment. The HPD's consist of a cylindrical vacuum envelope of 127 mm diameter capped with a spherical borosilicate UV-glass entrance window. Focusing electrodes demagnify the image on a silicon detector of 50~mm diameter comprising 2048 pads with a surface of 1~mm$^2$ each. The analogue readout electronics is integrated in the vacuum tube. As an intermediate step a HPD with a UV sensitive CsI photocathode has been produced which allowed to verify the electron optics of the HPD. A large UHV evaporation plant for the production of HPD's with visible light transmittive bialkali photocathodes (K$_2$CsSb) has been built and successfully operated. The evaporation process is optimized for maximum quantum efficiency and life time of the photocathodes. A cold Indium sealing technique developed for a minimum thermal load of the photocathode and the silicon sensor...

  5. Spatial Non-uniformity Measurements of Large Area Silicon Photodiodes

    OpenAIRE

    DURAK, Murat; SAMADOV, Farhad; TÜRKOĞLU, A. Kamuran

    2002-01-01

    Accurate determination of the responsivity of silicon photodiodes are highly desired in photometry. The change of responsivity over the surface, the so-called spatial non-uniformity, effects power measurements especially in photodiodes with large active areas. To study this effect, first an intensity-stabilized laser source-optics has been established. A purpose-built step-motor controlled two axis micro mechanical stage has been designed to scan the photodiode surface. In this stu...

  6. Crosstalk properties of the CMS HCAL hybrid photodiode

    CERN Document Server

    Cushman, P B; Pearson, N; Elias, J; Freeman, J; Green, D; Los, S; Ronzhin, A

    2003-01-01

    The requirements of large dynamic range, 40 MHz readout and 4T magnetic field of the CMS Hadronic calorimeter have led to the development of a custom Hybrid PhotoDiode (HPD). In the last 5 years many improvements have been made in cooperation with DEP B.V. Delft Electronische Producten, Roden, Netherlands. and Canberra Semiconductor N.V., Olen, Belgium. to the basic HPD concept to improve the performance. A 200-mum thick 19-channel PIN diode array with various surface treatments has been developed to ensure fast pulse behavior and low optical and capacitive crosstalk.

  7. The Pad HPD: A highly segmented hybrid photodiode

    International Nuclear Information System (INIS)

    Hybrid Photodiodes (HPD, also referred to as Hybrid Photo Detectors) represent one of the most promising options for high granularity single photon detection. We report about the development of the Pad HPD, a 5-inch device with a bialkali photocathode and encapsulated analog electronics for the readout of the 2048 channels. The design of the Pad HPD, which was optimised for the use in the RICH detectors of LHCb, comprises many features required for medical imaging applications. Several HPDs have been fabricated in a dedicated UHV facility at CERN. We briefly summarise the fabrication process and the excellent performance figures obtained in a lab set-up and with Cherenkov radiators in test beams. Emphasis is put on the performance increase which resulted from recent minor design changes

  8. Low-temperature performance of a large area avalanche photodiode

    International Nuclear Information System (INIS)

    A Large Area Avalanche Photodiode was studied, aiming to access its performance as light detector at low temperatures, down to -80 deg. C. The excess noise factor, F, was measured and found to be approximately independent of the temperature. A linear dependence of F on the APD gain with a slope of 0.00239±0.00008 was observed for gains >100. The detection of low intensity light pulses, producing only a few primary electron-hole pairs in the photodiode, is reported

  9. SIMULATION OF AVALANCHE PHOTODIODE CONSTRUCTION WITH GUARD AREAS

    Directory of Open Access Journals (Sweden)

    N. N. Koritko

    2015-04-01

    Full Text Available Construction and breakdown voltage of avalanche photodiode with Read diode structure was simulated by computer. It was shown that the guard area construction composed of the metal electrode and guard rings influences on the electrical quantities of n+-p junction breakdown region.

  10. Hybrid UV Imager Containing Face-Up AlGaN/GaN Photodiodes

    Science.gov (United States)

    Zheng, Xinyu; Pain, Bedabrata

    2005-01-01

    A proposed hybrid ultraviolet (UV) image sensor would comprise a planar membrane array of face-up AlGaN/GaN photodiodes integrated with a complementary metal oxide/semiconductor (CMOS) readout-circuit chip. Each pixel in the hybrid image sensor would contain a UV photodiode on the AlGaN/GaN membrane, metal oxide/semiconductor field-effect transistor (MOSFET) readout circuitry on the CMOS chip underneath the photodiode, and a metal via connection between the photodiode and the readout circuitry (see figure). The proposed sensor design would offer all the advantages of comparable prior CMOS active-pixel sensors and AlGaN UV detectors while overcoming some of the limitations of prior (AlGaN/sapphire)/CMOS hybrid image sensors that have been designed and fabricated according to the methodology of flip-chip integration. AlGaN is a nearly ideal UV-detector material because its bandgap is wide and adjustable and it offers the potential to attain extremely low dark current. Integration of AlGaN with CMOS is necessary because at present there are no practical means of realizing readout circuitry in the AlGaN/GaN material system, whereas the means of realizing readout circuitry in CMOS are well established. In one variant of the flip-chip approach to integration, an AlGaN chip on a sapphire substrate is inverted (flipped) and then bump-bonded to a CMOS readout circuit chip; this variant results in poor quantum efficiency. In another variant of the flip-chip approach, an AlGaN chip on a crystalline AlN substrate would be bonded to a CMOS readout circuit chip; this variant is expected to result in narrow spectral response, which would be undesirable in many applications. Two other major disadvantages of flip-chip integration are large pixel size (a consequence of the need to devote sufficient area to each bump bond) and severe restriction on the photodetector structure. The membrane array of AlGaN/GaN photodiodes and the CMOS readout circuit for the proposed image sensor would

  11. Results obtained using a 61-pixel Hybrid Photodiode scintillation camera

    International Nuclear Information System (INIS)

    In this paper, the performance characteristics of a small prototype gamma-camera system based on the use of the recently developed Multi-pixel Hybrid Photodiode (M-HPD) are described. A compact read-out system has been developed to record the signals from all 61 pixels in the device. Single photo-electrons can be detected in each pixel. This provides an excellent means for calibrating the signal detected in each pixel in terms of the number of photo-electrons. The position-resolution of the detector has been measured as a function of the number of photo-electrons by using a finely collimated beam of light. The spatial resolution (FWHM) was measured to be 0.5 mm for a signal level of 100 photo-electrons. The M-HPD has also been used in a miniature Anger-camera system to locate the position of interaction of gamma-ray photons in a scintillator. The light-pool generated by each event in a continuous scintillation crystal is spread in the 2mm thick entrance window of the M-HPD so that the photo-electron cloud is detected by a small cluster of anode pixels. The light-spread information has been measured and is compared with optical Monte Carlo simulations

  12. Characterization of new hexagonal large area Geiger Avalanche Photodiodes

    International Nuclear Information System (INIS)

    Photomultipliers (PMTs) are the standard detector for construction of the current generation of imaging Atmospheric Cherenkov Telescopes (IACTs). Despite impressive improvements in QE and reliability in the last years, these devices suffer from the limitation of being unable to operate in the partially illuminated sky (during full or partial moon periods) as the excess light leads to a significant increase in the rate of ageing of the devices themselves and consequently limit the life of the camera. A viable alternative is the large area Geiger-mode avalanche photodiodes (G-APDs also known as Silicon Photomultipliers or SiPMs) that are commercially available from different producers in various types and dimensions. The sufficiency of the maturity of this technology for application to Cherenkov Astronomy has already been demonstrated by the FACT telescope. One of the camera designs under study for the 4 m Davies Cotton Telescope foresees the utilization of a large area G-APDs coupled to non imaging light concentrators. In collaboration with Hamamatsu and deriving from their current technology, we have designed a new hexagonal shaped large area G-APD HEX S12516 which when coupled to a Winston cone of 24 degrees cutting angle allows for a pixel angular resolution of 0.25 degrees for a f/D 1.4 telescope with a diameter of 4 m. The device, available in 2 different cell size configurations (50 μm and 100 μm), is divided into 4 different channels powered in common cathode mode. A temperature sensor was included for a better temperature evaluation in the characterization phase. The first 3 prototypes were fully characterized and the results are compared to the larger area devices commercially available such as the S10985-050C (2x2 array of 3x3 mm2 G-APDs). The photo-detection efficiency is measured applying the Poisson statistics method using pulsed LED at 7 different wavelengths from 355 to 670 nm and for different bias over-voltages (Vov). Optical crosstalk and after

  13. Performance of a prototype RICH detector using hybrid photo-diodes

    CERN Document Server

    Albrecht, E; Bibby, J H; Brook, N H; Duane, A; French, M; Gibson, V; Giles, R; Halley, A W; Harnew, N; John, M; Miller, D G; O'Shea, V; Teixeira-Dias, P; Smale, N J; Websdale, David M; Wilkinson, G R; Wotton, S A

    2001-01-01

    A prototype Ring-Imaging Cherenkov detector has been operated in a charged particle test beam, Cherenkov photons are imaged onto a plane of hybrid photo-diode detectors. The geometrical arrangement of the prototype and data-taking conditions are described. An analysis of the detector performance, using silica aerogel, air and C/sub 4/F/sub 10/ gas radiators, is presented. The photon yields and observed Cherenkov angle resolutions are found to be in good agreement with Monte Carlo simulation and satisfy the requirements of the RICH 1 detector in the LHCb experiment. (14 refs).

  14. Performance of a prototype RICH detector using hybrid photo-diodes

    CERN Document Server

    Albrecht, E; Billy, J H; Brook, N H; Duane, A; French, M; Gibson, V; Giles, R; Halley, A W; Harnew, N; John, M; Miller, D G; O'Shea, V; Teixeira-Dias, P; Smale, N J; Websdale, D M; Wilkinson, G; Wotton, S A

    2001-01-01

    A prototype Ring-Imaging Cherenkov detector has been operated in a charged particle test beam. Cherenkov photons are imaged onto a plane of hybrid photo-diode detectors. The geometrical arrangement of the prototype and data-taking conditions are described. An analysis of the detector performance, using silica aerogel, air and C4F10 gas radiators, is presented. The photon yields and observed angle resolutions are found to be in good agreement with Monte Carlo simulation and satisfy the requirements of the RICH-1 detector in the LHCb experiment.

  15. A liquid-helium cooled large-area silicon PIN photodiode X-ray detector

    International Nuclear Information System (INIS)

    An X-ray detector using a liquid-helium cooled large-area silicon PIN photodiode has been developed along with a tailor-made charge sensitive preamplifier whose first-stage JFET has been cooled. The operating temperature of the JFET has been varied separately and optimized. The X- and γ-ray energy spectra for an 241Am source have been measured with the photodiode operated at 13 K. An energy resolution of 1.60 keV (FWHM) has been obtained for 60-keV γ rays and 1.30 keV (FWHM) for the pulser. The energy threshold could be set as low as 3 keV. It has been shown that a silicon PIN photodiode serves as a low-cost excellent X-ray detector which covers a large area at 13 K. (orig.)

  16. On the use of single large-area photodiodes in scintillation counters

    International Nuclear Information System (INIS)

    The compilation of this review was originally intended to assess the possibility of using photodiode-based scintillation counters in fluorescence EXAFS (or FLEXAFS) systems as a low-cost alternative to photomultiplier-based counters. The X-ray energies encountered in FLEXAFS experiments range from a few keV to a few tens of keV, and detectors are required to have some energy resolution and/or high count-rate capability in order to optimize the quality of data collected. The results presented in the reviewed literature imply strongly that photodiodes do not compete successfully with photomultipliers in scintillation counting systems for X-ray energies below the order of 100keV, at least at the present stage of photodiode technology. Nevertheless it is likely that there are other applications requiring X-ray detectors for which a photodiode-based scintillation counter may be perfectly adequate, and it is therefore felt that such a review is still useful. In addition, large-area single photodiodes have much to offer as X-ray detectors in their own right, and several of the considerations regarding their use in scintillation counters are highly relevant to this application. (author)

  17. A liquid-helium cooled large-area silicon PIN photodiode x-ray detector

    OpenAIRE

    Inoue, Yoshizumi; Moriyama, Shigetaka; Hara, Hideyuki; Minowa, Makoto; Shimokoshi, Fumio

    1995-01-01

    An x-ray detector using a liquid-helium cooled large-area silicon PIN photodiode has been developed along with a tailor-made charge sensitive preamplifier whose first-stage JFET has been cooled. The operating temperature of the JFET has been varied separately and optimized. The x- and $\\gamma$-ray energy spectra for an \

  18. Problems and solutions in high-rate multichannel hybrid photodiode design The CMS experience

    CERN Document Server

    Cushman, P B

    2002-01-01

    The unique conditions of the CMS experiment (4 T magnetic field, restricted access, high neutron radiation, and 25-ns bunch-crossings) necessitated the development of a new type of high-rate multichannel hybrid photodiode for the tile/fiber hadronic calorimeter. New complexities arose in the push toward high-rate operation, necessitating design changes in the diode structure and surface treatment. The product is now capable of high-rate operation with low crosstalk and leakage current. Lifetime studies of high-voltage behavior, total charge, and irradiation have shown that the tubes will survive the ten years of CMS running with only a few percent change in gain and manageable leakage current rise. (13 refs).

  19. Behaviour of large-area avalanche photodiodes under intense magnetic fields for VUV- visible- and X-ray photon detection

    International Nuclear Information System (INIS)

    The behaviour of large-area avalanche photodiodes for X-rays, visible and vacuum-ultra-violet (VUV) light detection in magnetic fields up to 5 T is described. For X-rays and visible light detection, the photodiode pulse amplitude and energy resolution were unaffected from 0 to 5 T, demonstrating the insensitivity of this type of detector to strong magnetic fields. For VUV light detection, however, the photodiode relative pulse amplitude decreases with increasing magnetic field intensity reaching a reduction of about 24% at 5 T, and the energy resolution degrades noticeably with increasing magnetic field

  20. Uniformity Measurements Across the Area of the CMS ECAL Avalanche Photodiodes

    CERN Document Server

    Godinovic, Nikola; Soric, Ivica; Antunovic, Zeljko; Dzelalija, Mile; Deiters, Konrad; Ingram, Quentin; Renker, Dieter; Musienko, Yuri

    2004-01-01

    The photodetectors which will read out the scintillation light generated in the lead tungstate crystals in the barrel part of the CMS electromagnetic calorimeter are avalanche photodiodes (APDs). Scanning the APD's active area with a collimated light spot, the spatial uniformity of their quantum efficiency and gain has been measured at four different operating gains. Details of the APD surface structure are examined by scanning with a fine light spot. These details help to explain the difference between the bias voltage for a given gain when the full APD area is illuminated and when only the central part is illuminated.

  1. Performance of a large area avalanche photodiode in a liquid xenon ionization and scintillation chamber

    OpenAIRE

    Ni, K.; Aprile, E.; Day, D.; Giboni, K L; Lopes, J. A. M.; Majewski, P.; Yamashita, M

    2005-01-01

    Scintillation light produced in liquid xenon (LXe) by alpha particles, electrons and gamma-rays was detected with a large area avalanche photodiode (LAAPD) immersed in the liquid. The alpha scintillation yield was measured as a function of applied electric field. We estimate the quantum efficiency of the LAAPD to be 45%. The best energy resolution from the light measurement at zero electric field is 7.5%([sigma]) for 976 keV internal conversion electrons from 207Bi and 2.6%([sigma]) for 5.5 M...

  2. Performance of a Large Area Avalanche Photodiode in a Liquid Xenon Ionization and Scintillation Chamber

    CERN Document Server

    Ni, K; Day, D; Giboni, K L; Lopes, J A M; Majewski, P; Yamashita, M

    2005-01-01

    Scintillation light produced in liquid xenon (LXe) by alpha particles, electrons and gamma-rays was detected with a large area avalanche photodiode (LAAPD) immersed in the liquid. The alpha scintillation yield was measured as a function of applied electric field. We estimate the quantum efficiency of the LAAPD to be 45%. The best energy resolution from the light measurement at zero electric field is 7.5%(sigma) for 976 keV internal conversion electrons from Bi-207 and 2.6%(sigma) for 5.5 MeV alpha particles from Am-241. The detector used for these measurements was also operated as a gridded ionization chamber to measure the charge yield. We confirm that using a LAAPD in LXe does not introduce impurities which inhibit the drifting of free electrons.

  3. Organic-inorganic hybrid inverted photodiode with planar heterojunction for achieving low dark current and high detectivity

    Science.gov (United States)

    Ha, JaeUn; Yoon, Seongwon; Lee, Jong-Soo; Chung, Dae Sung

    2016-03-01

    In this study, the strategy of using an organic-inorganic hybrid planar heterojunction consisting of polymeric semiconductors and inorganic nanocrystals is introduced to realize a high-performance hybrid photodiode (HPD) with low dark current and high detectivity. To prevent undesired charge injection under the reverse bias condition, which is the major dark current source of the photodiode, a well-defined planar heterojunction is strategically constructed via smart solution process techniques. The optimized HPD renders a low dark current of ˜10-5 mA cm-2 at -5 V and ˜10-6 mA cm-2 at -1 V, as well as a high detectivity ˜1012 Jones across the entire visible wavelength range. Furthermore, excellent photocurrent stability is demonstrated under continuous light exposure. We believe that the solution-processed planar heterojunction with inverted structure can be an attractive alternative diode structure for fabricating high-performance HPDs, which usually suffer from high dark current issues.

  4. Study of large area Hamamatsu avalanche photodiode in a γ-ray scintillation detector

    International Nuclear Information System (INIS)

    We have carried out study of a large area (10x10mm2), reverse-type avalanche photodiode (APD) recently developed by Hamamatsu photonics. It has low dark current of 3nA at room temperature, and the gain stability was almost the same as prototypical APDs reported in our previous paper. We studied the performance as a γ-ray detector with four scintillators, CsI(Tl), BGO, GSO(Ce), and YAP(Ce) crystals. For example we obtained the best energy resolution of 4.9±0.2% (FWHM) for 662keV γ-rays, as measured with a 10x10x10mm3 CsI(Tl) crystal. The minimum detectable energy was as low as 10keV at 20-bar C and 3.1keV at -20-bar C. Thanks to its large effective area, this APD can effectively read out photons from larger size scintillators. When coupling to a 300x48mm2 BGO plate of 3mm thickness, an FWHM energy resolution of 20.9±0.2% was obtained for 662keV γ-rays, with the minimum detectable energy of about 60keV at -150C. These results suggest that our prototype APD can be a promising device for various applications replacing traditional PMTs such as use in space for Japan's future X-ray astronomy mission NeXT

  5. Large area avalanche photodiodes in scintillation and X-rays detection

    CERN Document Server

    Moszynski, M; Kapusta, M; Balcerzyk, M

    2002-01-01

    The presented paper summarizes our earlier studies on application of beveled-edge Large Area Avalanche Photodiodes (LAAPDs) in gamma-rays scintillation detection. LAAPDs, due to their high quantum efficiency and low excess noise factor allow for better statistical accuracy of the signal as compared to photomultipliers. The device dark noise contribution significantly affects energy resolution only for gamma-rays with energy below 50 keV. Notably better or comparable energy resolutions to those observed with a XP2020Q photomultiplier were obtained with the LAAPDs for a number of different scintillators. Particularly, the recorded energy resolutions of 4.3+-0.2% and 4.8+-0.14% measured with YAP and CsI(Tl) crystals, respectively, for the 662 keV gamma-peak from a sup 1 sup 3 sup 7 Cs source belong to the best observed ever with these scintillation detectors. Results of the study of timing with fast scintillators coupled to the LAAPD showed subnanosecond time resolution of 570+-30 ps for sup 6 sup 0 Co gamma-ray...

  6. Large Area Avalanche Photodiodes in X-rays and scintillation detection

    International Nuclear Information System (INIS)

    The performance of 10 and 16 mm diameter beveled edge Large Area Avalanche Photodiodes (LAAPD) was studied in X-rays and scintillation detection. A good linearity of the LAAPD response to X-rays was observed up to energies of about 20 keV. The ratio of the APD gain for X-rays and light pulses remained constant (within 1%) for both the 5.9 and 16.6 keV photopeaks in the APD gain range up to 100. This allowed for use of soft X-rays as an accurate reference in APD scintillation detection study. The study covered measurements of the number of generated e-h pairs and energy resolution for several scintillators. Particularly, the energy resolution of 4.8±0.2% was measured with a small CsI(Tl) crystal for 662 keV γ-rays from a 137Cs source and 4.3±0.2% with YAP:Ce. The measured energy resolutions were comparable or better than those measured with a photomultiplier

  7. Magnetic field effects on large area avalanche photodiodes at cryogenic temperatures

    International Nuclear Information System (INIS)

    We present results for detection of X-rays by large area avalanche photodiodes (APDs) in strong magnetic fields and at cryogenic temperatures. Whereas at room temperature we observe essentially no effects on the response, at cryogenic temperature we observe significant distortion when the magnetic field is in the plane of the APD surface (and thus perpendicular to the electric field in the APD). At all temperatures, effects are minor when the magnetic field is normal to the APD surface (and thus parallel to the electric field in the APD). We performed measurements of the response of an APD to illumination by X-rays in fields between 0 and 4.6 T, for temperatures between 77 and 250 K. Measurements were performed using 241Am and 55Fe sources, and 1.5 keV X-rays produced by aluminum fluorescence. The data indicate that the effects are associated with those X-rays that are absorbed in the drift region of the APD.

  8. Large area avalanche photodiodes in scintillation and X-rays detection

    International Nuclear Information System (INIS)

    The presented paper summarizes our earlier studies on application of beveled-edge Large Area Avalanche Photodiodes (LAAPDs) in γ-rays scintillation detection. LAAPDs, due to their high quantum efficiency and low excess noise factor allow for better statistical accuracy of the signal as compared to photomultipliers. The device dark noise contribution significantly affects energy resolution only for γ-rays with energy below 50 keV. Notably better or comparable energy resolutions to those observed with a XP2020Q photomultiplier were obtained with the LAAPDs for a number of different scintillators. Particularly, the recorded energy resolutions of 4.3±0.2% and 4.8±0.14% measured with YAP and CsI(Tl) crystals, respectively, for the 662 keV γ-peak from a 137Cs source belong to the best observed ever with these scintillation detectors. Results of the study of timing with fast scintillators coupled to the LAAPD showed subnanosecond time resolution of 570±30 ps for 60Co γ-rays detected in LSO crystal. The response of LAAPD to X-rays and factors limiting energy resolution have been discussed too

  9. Response of large area avalanche photodiodes to low energy x rays

    International Nuclear Information System (INIS)

    For an experiment to study neutron radiative beta-decay, we operated large area avalanche photodiodes (APDs) near liquid nitrogen temperature to detect x rays with energies between 0.2 keV and 20 keV. Whereas there are numerous reports of x ray spectrometry using APDs at energies above 1 keV, operation near liquid nitrogen temperature allowed us to reach a nominal threshold of 0.1 keV. However, due to the short penetration depth of x rays below 1 keV, the pulse height spectrum of the APD become complex. We studied the response using monochromatic x ray beams and employed phenomenological fits of the pulse height spectrum to model the measurement of a continuum spectrum from a synchrotron. In addition, the measured pulse height spectrum was modelled using a profile for the variation in efficiency of collection of photoelectrons with depth into the APD. The best results are obtained with the collection efficiency model.

  10. Low-Noise Large-Area Photoreceivers with Low Capacitance Photodiodes

    Science.gov (United States)

    Joshi, Abhay M. (Inventor); Datta, Shubhashish (Inventor)

    2013-01-01

    A quad photoreceiver includes a low capacitance quad InGaAs p-i-n photodiode structure formed on an InP (100) substrate. The photodiode includes a substrate providing a buffer layer having a metal contact on its bottom portion serving as a common cathode for receiving a bias voltage, and successive layers deposited on its top portion, the first layer being drift layer, the second being an absorption layer, the third being a cap layer divided into four quarter pie shaped sections spaced apart, with metal contacts being deposited on outermost top portions of each section to provide output terminals, the top portions being active regions for detecting light. Four transimpedance amplifiers have input terminals electrically connected to individual output terminals of each p-i-n photodiode.

  11. Hybrid AlGaN-SiC Avalanche Photodiode for Deep-UV Photon Detection

    Science.gov (United States)

    Aslam, Shahid; Herrero, Federico A.; Sigwarth, John; Goldsman, Neil; Akturk, Akin

    2010-01-01

    The proposed device is capable of counting ultraviolet (UV) photons, is compatible for inclusion into space instruments, and has applications as deep- UV detectors for calibration systems, curing systems, and crack detection. The device is based on a Separate Absorption and Charge Multiplication (SACM) structure. It is based on aluminum gallium nitride (AlGaN) absorber on a silicon carbide APD (avalanche photodiode). The AlGaN layer absorbs incident UV photons and injects photogenerated carriers into an underlying SiC APD that is operated in Geiger mode and provides current multiplication via avalanche breakdown. The solid-state detector is capable of sensing 100-to-365-nanometer wavelength radiation at a flux level as low as 6 photons/pixel/s. Advantages include, visible-light blindness, operation in harsh environments (e.g., high temperatures), deep-UV detection response, high gain, and Geiger mode operation at low voltage. Furthermore, the device can also be designed in array formats, e.g., linear arrays or 2D arrays (micropixels inside a superpixel).

  12. InP-Based Waveguide Triple Transit Region Photodiodes for Hybrid Integration with Passive Optical Silica Waveguides

    Directory of Open Access Journals (Sweden)

    Vitaly Rymanov

    2015-12-01

    Full Text Available We report on a novel InP-based 1.55 μm waveguide triple transit region photodiode (TTR-PD structure for hybrid integration with passive optical silica waveguides. Using the beam propagation method, numerical analyses reveal that, for evanescent optical coupling between a passive silica waveguide and the InP-based waveguide TTR-PD, a coupling efficiency of about 90% can be obtained. In addition to that, an absorption of about 50% is simulated within a TTR-PD length of 30 µm. For fabricated TTR-PD chips, a polarization dependent loss (PDL of less than 0.9 dB is achieved within the complete optical C-band. At the operational wavelength of 1.55 µm, a reasonable PDL of 0.73 dB is measured. The DC responsivity and the RF responsivity are achieved on the order of 0.52 A/W and 0.24 A/W, respectively. Further, a 3 dB bandwidth of 132 GHz is experimentally demonstrated and high output-power levels exceeding 0 dBm are obtained. Even at the 3 dB cut-off frequency, no saturation effects occur at a photocurrent of 15.5 mA and an RF output power of −4.6 dBm is achieved. In addition to the numerical and experimental achievements, we propose a scheme for a hybrid-integrated InP/silicon-based photonic millimeter wave transmitter.

  13. An evaluation of the new compact hybrid photodiodes R7110U-07/40 from Hamamatsu in high-speed light detection mode

    CERN Document Server

    Mirzoyan, R; Lorenz, E

    2000-01-01

    The main parameters of hybrid photodiodes (HPD) are constantly improving. In the new 20 mm diameter HPDs from Hamamatsu an avalanche diode (AD) serves as anode. Due to high gain of the used ADs the HPDs show a total gain of 6-8x10 sup 4 at nominal HV. This allows one to use HPDs with very fast low-noise voltage amplifiers and to detect fast pulses (down to the single photoelectron level) with very good amplitude resolution. Of special interest are HPDs of the type R7110U-40 with GaAsP photocathode which provide a quantum efficiency of approx 40% in maximum at approx 500 nm. Results on the evaluation of the above-mentioned HPDs and their comparison with HPDs from INTEVAC will be presented.

  14. An evaluation of the new compact hybrid photodiodes R7110U-07/40 from Hamamatsu in high-speed light detection mode

    International Nuclear Information System (INIS)

    The main parameters of hybrid photodiodes (HPD) are constantly improving. In the new 20 mm diameter HPDs from Hamamatsu an avalanche diode (AD) serves as anode. Due to high gain of the used ADs the HPDs show a total gain of 6-8x104 at nominal HV. This allows one to use HPDs with very fast low-noise voltage amplifiers and to detect fast pulses (down to the single photoelectron level) with very good amplitude resolution. Of special interest are HPDs of the type R7110U-40 with GaAsP photocathode which provide a quantum efficiency of ∼40% in maximum at ∼500 nm. Results on the evaluation of the above-mentioned HPDs and their comparison with HPDs from INTEVAC will be presented

  15. Energy resolution and light yield non-proportionality of pure NaI scintillator studied with large area avalanche photodiodes at liquid nitrogen temperatures

    CERN Document Server

    Moszynski, M; Kapusta, M; Szawlowski, M; Klamra, W; Schotanus, P

    2002-01-01

    The pure NaI crystal has been studied using a Large Area Avalanche Photodiode (LAAPD) at near liquid nitrogen (LN sub 2) temperatures. The study showed a high light output of 44 000+-4000 photons/MeV (ph/MeV), the energy resolution of 5.9+-0.2% for 661.6 keV gamma-rays from a sup 1 sup 3 sup 7 Cs source and a good proportionality of the light yield versus gamma-ray energy. It has been shown also that a cooled LAAPD is an excellent photodetector to study scintillators at near LN sub 2 temperatures.

  16. Energy resolution and light yield non-proportionality of pure NaI scintillator studied with large area avalanche photodiodes at liquid nitrogen temperatures

    International Nuclear Information System (INIS)

    The pure NaI crystal has been studied using a Large Area Avalanche Photodiode (LAAPD) at near liquid nitrogen (LN2) temperatures. The study showed a high light output of 44 000±4000 photons/MeV (ph/MeV), the energy resolution of 5.9±0.2% for 661.6 keV γ-rays from a 137Cs source and a good proportionality of the light yield versus γ-ray energy. It has been shown also that a cooled LAAPD is an excellent photodetector to study scintillators at near LN2 temperatures

  17. Investigation of avalanche photodiodes

    International Nuclear Information System (INIS)

    Some characteristics and performances of a set of nine Hamamatsu avalanche photodiodes have been investigated. These APDs have equipped a small 3x3 PbWO4 crystal matrix in X3 beam during the summer of 1995. This note summarizes the main results of this work. An electromagnetic calorimeter with a high resolution is necessary to search for the Higgs if it has a mass between 80 and 160 GeV. A PbWO4 crystal option has been chosen by the CMS collaboration to achieve this task. The light is collected and converted into an electric charge by an Avalanche Photodiode (APD) followed by a fast preamplifier. The advantage of the APDs is that they are not sensitive to the strong magnetic field when compared to photomultipliers and they are a small nuclear counter effect when compared to PIN diodes. In this study, we have tested nine low capacitance Hamamatsu APDs (S5345) received in spring, 1995 with an area of 0.2 cm2. We have measured the capacitance and dark current for each APD. The gain measurements have also been done with gamma sources, continuous and pulsed light. The gain sensitivity versus bias and temperature have also been investigated succinctly. (author). 8 refs., 16 figs., 1 tab

  18. Investigation of avalanche photodiodes

    Energy Technology Data Exchange (ETDEWEB)

    Si Mohand, D.; Benhammou, Y.; Depasse, P.; Goyot, M.; Ille, B.; Linard, E.; Martin, F.; Musienko, Y.

    1996-06-01

    Some characteristics and performances of a set of nine Hamamatsu avalanche photodiodes have been investigated. These APDs have equipped a small 3x3 PbWO{sub 4} crystal matrix in X3 beam during the summer of 1995. This note summarizes the main results of this work. An electromagnetic calorimeter with a high resolution is necessary to search for the Higgs if it has a mass between 80 and 160 GeV. A PbWO{sub 4} crystal option has been chosen by the CMS collaboration to achieve this task. The light is collected and converted into an electric charge by an Avalanche Photodiode (APD) followed by a fast preamplifier. The advantage of the APDs is that they are not sensitive to the strong magnetic field when compared to photomultipliers and they are a small nuclear counter effect when compared to PIN diodes. In this study, we have tested nine low capacitance Hamamatsu APDs (S5345) received in spring, 1995 with an area of 0.2 cm{sup 2}. We have measured the capacitance and dark current for each APD. The gain measurements have also been done with gamma sources, continuous and pulsed light. The gain sensitivity versus bias and temperature have also been investigated succinctly. (author). 8 refs., 16 figs., 1 tab.

  19. Design of a large-area CsI(Tl) photo-diode array for explosives detection by neutron-activation gamma-ray spectroscopy

    International Nuclear Information System (INIS)

    A design for a large area, position-sensitive gamma-ray spectrometer for use in imaging explosive materials is described. The design has been optimised for use in the energy range from 2 to 12 MeV. At 5 MeV, the spectral resolution of each CsI(Tl)-photodiode pixel is better than 3% FWHM. The multi-element detector system, when used in conjunction with a coded-aperture mask, is able to provide a 'multi-colour' image of the scene when illuminated by a neutron source. The feasibility of using such a system to identify the unique elemental composition and location of the explosive materials is discussed

  20. High Efficiency UV Photodiodes fabricated on p-type Substrate

    NARCIS (Netherlands)

    Ramachandra Rao, P.; Milosavljevic, S.; Kroth, U.; Laubis, C.; Nihtianov, S.

    2014-01-01

    Newly developed “pure-boron” photodiodes, with high sensitivity and stability in the whole ultraviolet range (UV), are described. The main purpose of this work is to create and characterize a large-area UV photodiode, representing a structure of a pixel in a backside illuminated CMOS image sensor, f

  1. Gallium-based avalanche photodiode optical crosstalk

    Science.gov (United States)

    Blazej, Josef; Prochazka, Ivan; Hamal, Karel; Sopko, Bruno; Chren, Dominik

    2006-11-01

    Solid-state single photon detectors based on avalanche photodiode are getting more attention in various areas of applied physics: optical sensors, quantum key distribution, optical ranging and Lidar, time-resolved spectroscopy, X-ray laser diagnostics, and turbid media imaging. Avalanche photodiodes specifically designed for single photon counting semiconductor avalanche structures have been developed on the basis of various materials: Si, Ge, GaP, GaAsP, and InGaP/InGaAs at the Czech Technical University in Prague during the last 20 years. They have been tailored for numerous applications. Trends in demand are focused on detection array construction recently. Even extremely small arrays containing a few cells are of great importance for users. Electrical crosstalk between individual gating and quenching circuits and optical crosstalk between individual detecting cells are serious limitation for array design and performance. Optical crosstalk is caused by the parasitic light emission of the avalanche which accompanies the photon detection process. We have studied in detail the optical emission of the avalanche photon counting structure in the silicon- and gallium-based photodiodes. The timing properties and spectral distribution of the emitted light have been measured for different operating conditions to quantify optical crosstalk. We conclude that optical crosstalk is an inherent property of avalanche photodiode operated in Geiger mode. The only way to minimize optical crosstalk in avalanche photodiode array is to build active quenching circuit with minimum response time.

  2. A silicon drift photodiode

    Energy Technology Data Exchange (ETDEWEB)

    Avset, B.S.; Evensen, L.; Ellison, J.A.; Hall, G.; Roe, S.; Wheadon, R.; Hansen, T.E.

    1989-02-01

    A low capacitance photodiode based on the principle of the solid state drift chamber has been constructed and tested. The device is based on a cellular design with an anode at the centre of each of five cells allowing electrons liberated by ionisation to drift up to 1mm to the read out strip. Results on the performance of the detector, including leakage current, capacitance and drift properties, are presented and compared with simulations.

  3. Development of Active Pixel Photodiode Sensors for Gamma Camera Application

    CERN Document Server

    Salahuddin, Nur Sultan; Heruseto, Brahmantyo; Parmentier, Michel

    2011-01-01

    We designed new photodiodes sensors including current mirror amplifiers. These photodiodes have been fabricated using a CMOS 0.6 micrometers process from Austria Micro System (AMS). The Photodiode areas are respectiveley 1mm x 1mm and 0.4mm x 0.4mm with fill factor 98 % and total chip area is 2 square millimetres. The sensor pixels show a logarithmic response in illumination and are capable of detecting very low blue light (less than 0.5 lux) . These results allow to use our sensor in new Gamma Camera solid-state concept.

  4. Implementation of area optimized Floating Point Units in Hybrid FPGA

    Directory of Open Access Journals (Sweden)

    Ankit Kumar Kusumakar#1 , Utsav Malviya

    2013-05-01

    Full Text Available The “Implementation of area optimized Floating Point Unit in Hybrid FPGA” is gradually replacing the conventional slower FPUs which have lower speed while computing complex calculations includes Digital Signal Processing. Existing FPGA devices are not optimized for floating-point computations, and for this reason, floating-point operators consume a significant amount of FPGA resources. I will try to implement area optimized FPU on a hybrid Field Programmable Gate Arrays (FPGAs with new feature division, multiplication and addition which is designed with VHDL, synthesized using Xilinx ISE 9.2i Webpack, simulated using ModelSim simulator and then implemented on Xilinx Virtex 2E FPGA.

  5. Inkjet-printed organic photodiodes

    International Nuclear Information System (INIS)

    Inkjet-printed organic photodiodes are reported, which eliminate the need for photodiode patterning as compared to other solution-based fabrication techniques. Both interlayer and bulk heterojunction ink formulations are optimized to fabricate diodes with low dark currents of 2 μA/cm2 and high external quantum efficiencies of 68.5% at - 5 V reverse bias. The current-voltage characteristics of the printed devices are competitive with photodiodes fabricated with established solution based technologies, such as spray-coating or blading. A comparison of photodiodes fabricated with a variety of solution processes showed that dark current densities are not related to microscale bulk heterojunction roughness.

  6. The research of controller area network on hybrid electrical vehicle

    Institute of Scientific and Technical Information of China (English)

    Wu Hongxing; Song Liwei; Kou Baoquan; Cheng Shukang

    2006-01-01

    It is of increasing importance to design and implement vehicle networks for transferring information between electrical control units on Hybrid Electrical Vehicle (HEV). This paper presents a scheme of using Controller Area Network (CAN) technology to realize communication and datasharing between the electrical units on the HEV. The principle and communication protocol of Electrical Control Units (ECU) CAN node are introduced. By considering different sensitivity of the devices to the latency of data transportation, a new design procedure is proposed for the purpose of simplifying network codes and wiring harness, reducing assembly space and weight, improving assembly efficiency, and enhancing fault-diagnose in auto networks.

  7. Fast silicon drift photodiodes free from bias connections on the light entering side

    CERN Document Server

    Castoldi, A; Gatti, E; Holl, P; Rehak, P

    2000-01-01

    A new type of silicon drift photodiode intended to be coupled to large area scintillators is described. The diodes have a relatively large area (1 cm sup 2) and a short maximal drift time (300 ns). They operate without requiring any external electrical connection at the side of the photodiode coupled to the scintillating crystal. These new photodiodes have almost identical ring structures on both sides with individual rings being at linearly increasing potentials providing the required high electric drift field. A new feature of the presented photodiodes is a small modification of the electrode structure near the signal collecting anode. It allows a full depletion of the photodiode and the highest drift field. Advantages and drawbacks of this kind of photodiodes are described.

  8. A Novel Ring Shaped Photodiode for Reflectance Pulse Oximetry in Wireless Applications

    DEFF Research Database (Denmark)

    Duun, Sune; Haahr, Rasmus Grønbek; Birkelund, Karen;

    2007-01-01

    photodiode has an inner-outer radius of 3.29 -4.07 mm and an area of 18 mm2 , however, photodiodes with ring center radii ranging from 2.8 -4.9 mm have been fabricated. Using the pulse oxymetry sensor photoplethysmograms clearly showing the cardiovascular cycle are recorded. An on-chip integrated Au...

  9. Silicon Geiger mode avalanche photodiodes

    Institute of Scientific and Technical Information of China (English)

    M. Mazzillo; S. Billotta; G. Bonanno; A. Campisi; L. Cosentino; P. Finocchiaro; F. Musumeci; S.Privitera; S. Tudisco; G. Condorelli; D. Sanfilippo; G. Fallica; E. Sciacca; S. Aurite; S. Lombardo; E. Rlmini; M. Belluso

    2007-01-01

    In this letter we present the results regarding the electrical and optical characterization of Geiger mode silicon avalanche photodiodes (GMAP) fabricated by silicon standard planar technology. Low dark count rates, negligible afterpulsing effects,good timing resolution and high quantum detection efficiency in all the visible range have been measured. The very good electro-optical performances of our photodiodes make them attractive for the fabrication of arrays with a large number of GMAP to be used both in the commercial and the scientific fields, as telecommunications and nuclear medical imaging.

  10. Hybrid methodology for hourly global radiation forecasting in Mediterranean area

    CERN Document Server

    Voyant, Cyril; Paoli, Christophe; Nivet, Marie Laure

    2012-01-01

    The renewable energies prediction and particularly global radiation forecasting is a challenge studied by a growing number of research teams. This paper proposes an original technique to model the insolation time series based on combining Artificial Neural Network (ANN) and Auto-Regressive and Moving Average (ARMA) model. While ANN by its non-linear nature is effective to predict cloudy days, ARMA techniques are more dedicated to sunny days without cloud occurrences. Thus, three hybrids models are suggested: the first proposes simply to use ARMA for 6 months in spring and summer and to use an optimized ANN for the other part of the year; the second model is equivalent to the first but with a seasonal learning; the last model depends on the error occurred the previous hour. These models were used to forecast the hourly global radiation for five places in Mediterranean area. The forecasting performance was compared among several models: the 3 above mentioned models, the best ANN and ARMA for each location. In t...

  11. High quantum efficiency annular backside silicon photodiodes for reflectance pulse oximetry in wearable wireless body sensors

    DEFF Research Database (Denmark)

    Duun, Sune Bro; Haahr, Rasmus Grønbek; Hansen, Ole;

    2010-01-01

    The development of annular photodiodes for use in a reflectance pulse oximetry sensor is presented. Wearable and wireless body sensor systems for long-term monitoring require sensors that minimize power consumption. We have fabricated large area 2D ring-shaped silicon photodiodes optimized for...... minimizing the optical power needed in reflectance pulse oximetry. To simplify packaging, backside photodiodes are made which are compatible with assembly using surface mounting technology without pre-packaging. Quantum efficiencies up to 95% and area-specific noise equivalent powers down to 30 fW Hz(-1....../2) cm(-1) are achieved. The photodiodes are incorporated into a wireless pulse oximetry sensor system embedded in an adhesive patch presented elsewhere as 'The Electronic Patch'. The annular photodiodes are fabricated using two masked diffusions of first boron and subsequently phosphor. The surface is...

  12. Intermodal parametric gain of degenerate four wave mixing in large mode area hybrid photonic crystal fibers

    OpenAIRE

    Petersen, Sidsel Rübner; Lægsgaard, Jesper; Alkeskjold, Thomas Tanggaard

    2013-01-01

    Intermodal degenerate four wave mixing (FWM) is investigated numerically in large mode area hybrid photonic crystal fibers. The dispersion is controlled independently of core size, and thus allows for power scaling of the FWM process.

  13. Intermodal parametric gain of degenerate four wave mixing in large mode area hybrid photonic crystal fibers

    DEFF Research Database (Denmark)

    Petersen, Sidsel Rübner; Lægsgaard, Jesper; Alkeskjold, Thomas Tanggaard

    2013-01-01

    Intermodal degenerate four wave mixing (FWM) is investigated numerically in large mode area hybrid photonic crystal fibers. The dispersion is controlled independently of core size, and thus allows for power scaling of the FWM process.......Intermodal degenerate four wave mixing (FWM) is investigated numerically in large mode area hybrid photonic crystal fibers. The dispersion is controlled independently of core size, and thus allows for power scaling of the FWM process....

  14. Novel vertical silicon photodiodes based on salicided polysilicon trenched contacts

    International Nuclear Information System (INIS)

    The classical concept of silicon photodiodes comprises of a planar design characterized by heavily doped emitters. Such geometry has low collection efficiency of the photons absorbed close to the surface. An alternative, promising, approach is to use a vertical design. Nevertheless, realization of such design is technologically challenged, hence hardly explored. Herein, a novel type of silicon photodiodes, based on salicided polysilicon trenched contacts, is presented. These contacts can be prepared up to 10 μm in depth, without showing any leakage current associated with the increase in the contact area. Consequently, the trenched photodiodes revealed better performance than no-trench photodiodes. A simple two dimensional model was developed, allowing to estimate the conditions under which a vertical design has the potential to have better performance than that of a planar design. At large, the deeper the trench is, the better is the vertical design relative to the planar (up to 10 μm for silicon). The vertical design is more advantageous for materials characterized by short diffusion lengths of the carriers. Salicided polysilicon trenched contacts open new opportunities for the design of solar cells and image sensors. For example, these contacts may passivate high contact area buried contacts, by virtue of the conformity of polysilicon interlayer, thus lowering the via resistance induced recombination enhancement effect

  15. Utilization of photodiodes for ionizing radiation dosimetry

    International Nuclear Information System (INIS)

    The behaviour of silicon photodiodes as detector, for gama and x-ray dosimetry is discussed. Measurements were realized with photodiodes operating in the photovoltaic mode, the current produzed was detected in the eletrometer constructed in the DEN/UFPE. The results obtained showed that the photodiode response is linear with the dose and that variation of 40 degrees in the incidence angule of the radiation caused a variation of 5% in the dose determination. (author)

  16. Ultraviolet avalanche photodiodes

    Science.gov (United States)

    McClintock, Ryan; Razeghi, Manijeh

    2015-08-01

    The III-Nitride material system is rapidly maturing; having proved itself as a material for LEDs and laser, and now finding use in the area of UV photodetectors. However, many UV applications are still dominated by the use of photomultiplier tubes (PMT). PMTs are capable of obtaining very high sensitivity using internal electron multiplication gain (typically ~106). It is highly desirable to develop a compact semiconductor-based photodetector capable of realizing this level of sensitivity. In principle, this can be obtained in III-Nitrides by taking advantage of avalanche multiplication under high electric fields - typically 2.7 MV/cm, which with proper design can correspond to an external reverse bias of less than 100 volts. In this talk, we review the current state-of-the-art in III-Nitride solar- and visible-blind APDs, and present our latest results on GaN APDs grown on both conventional sapphire and low dislocation density free-standing c- and m-plane GaN substrates. Leakage current, gain, and single photon detection efficiency (SPDE) of these APDs were compared. The spectral response and Geiger-mode photon counting performance of UV APDs are studied under low photon fluxes, with single photon detection capabilities as much as 30% being demonstrated in smaller devices. Geiger-mode operation conditions are optimized for enhanced SPDE.

  17. Avalanche photodiodes now and possible developments

    International Nuclear Information System (INIS)

    Avalanche Photodiodes (APDs) are now out of their infancy and are used in large numbers in the electromagnetic calorimeter of CMS where they have to stand the extremely hostile environment of LHC. This type--with smaller sensitive area and arranged in monolithic arrays--is an excellent candidate for the read out of scintillating crystals in medical imaging and a PET scanner operates already successfully since more than 3 years. We present the properties of the device used in CMS and possible improvements of the structure, which could open the door for new applications. Operating APDs at low temperatures or in Geiger mode will allow single photon counting and in future they could replace photomultiplier tubes

  18. Avalanche photodiodes now and possible developments

    CERN Document Server

    Britvitch, I; Ingram, Q; Kuznetsov, A; Musienko, Y; Renker, D; Reucroft, S; Sakhelashvili, T M; Swain, J

    2004-01-01

    Avalanche Photodiodes (APDs) are now out of their infancy and are used in large numbers in the electromagnetic calorimeter of CMS where they have to stand the extremely hostile environment of LHC. This type - with smaller sensitive area and arranged in monolithic arrays - is an excellent candidate for the read out of scintillating crystals in medical imaging and a PET scanner operates already successfully since more than 3 years. We present the properties of the device used in CMS and possible improvements of the structure, which could open the door for new applications. Operating APDs at low temperatures or in Geiger mode will allow single photon counting and in future they could replace photomultiplier tubes.

  19. Development of high gain photodiode array based on commercial CMOS process

    International Nuclear Information System (INIS)

    Developing photodiodes in commercial CMOS process and integrating it with readout electronics without any process modification involves formidable challenges. Due to low resistivity of the wafer used in commercial CMOS process, the junction capacitance per area of the PN junction is quite large thereby limiting the size of the active area of the photodiode leading to degradation in high speed response. On the contrary, the sensitivity and quantum efficiency of the optical detector tends to improve with increase in active area of the detector. The major challenge in designing high gain photodiode in sub micron CMOS technology is to avoid the premature perimeter edge breakdown or the soft breakdown. This paper reports two different design approaches of high gain photodiode arrays in commercial 0.35 um CMOS technology and HV CMOS process

  20. Substitution of photomultiplier tubes by photodiodes

    International Nuclear Information System (INIS)

    The application of Si semiconductors, either of the conventional or the avalanche type, as light amplifiers in radiation detection, has been studied aiming the substitution of photomultiplier (PM) tubes by photodiodes. The objective of this work is to compare the response of photodiodes and PM tubes when coupled to scintillation crystals. A Hamamatsu Si photodiode, model S 1337-66 B Q, was coupled to a Harshaw NaI (TI) scintillation crystal of window diameter equal to 25,4 mm. Its performance was evaluated by specially designed associated electronics, compatible with the photodiode characteristics. X-ray beams from 30 to 111 KeV were used to determine the response and the repeatability of the scintillator-photodiode and the scintillator-PM tube systems. The repeatability was found to be within 0,27% for the photodiode and 0,57% for the PM tube. This work confirmed that photodiodes can be used as light amplifiers, provided their characteristics, such as light spectrum response, are considered. It also shows that further studies are necessary in order to identify the applications in radiation detection where PM tubes might be replaced by photodiodes. (author)

  1. Note: Effect of photodiode aluminum cathode frame on spectral sensitivity in the soft x-ray energy band

    Science.gov (United States)

    McGarry, M. B.; Franz, P.; Den Hartog, D. J.; Goetz, J. A.; Johnson, J.

    2014-09-01

    Silicon photodiodes used for soft x-ray detection typically have a thin metal electrode partially covering the active area of the photodiode, which subtly alters the spectral sensitivity of the photodiode. As a specific example, AXUV4BST photodiodes from International Radiation Detectors have a 1.0 μm thick aluminum frame covering 19% of the active area of the photodiode, which attenuates the measured x-ray signal below ˜6 keV. This effect has a small systematic impact on the electron temperature calculated from measurements of soft x-ray bremsstrahlung emission from a high-temperature plasma. Although the systematic error introduced by the aluminum frame is only a few percent in typical experimental conditions on the Madison Symmetric Torus, it may be more significant for other instruments that use similar detectors.

  2. Tailoring the parametric gain in large mode area hybrid photonic crystal fibers

    DEFF Research Database (Denmark)

    Petersen, Sidsel Rübner; Lægsgaard, Jesper; Alkeskjold, Thomas Tanggaard

    2013-01-01

    The spectral width of parametric gain peaks due to degenerate four-wave mixing is investigated numerically in large-mode-area hybrid photonic crystal fibers. The width is varied for a maintained pump wavelength and gain maximum position by tailoring the dispersion.......The spectral width of parametric gain peaks due to degenerate four-wave mixing is investigated numerically in large-mode-area hybrid photonic crystal fibers. The width is varied for a maintained pump wavelength and gain maximum position by tailoring the dispersion....

  3. Test of micropixel avalanche photodiodes

    International Nuclear Information System (INIS)

    The micropixel avalanche photodiode (MAPD) is a novel photodetector with a multipixel intrinsic structure on the common silicon substrate. The typical size of each pixel is 20-30 μm and the density is about 103 mm-2. Each pixel works on the common load in the Geiger mode, where the discharge is limited by an individual quenching resistor (negative feedback like in the gas Geiger counter) included in each pixel feeding chain located on the common substrate. In the Geiger mode one can get an amplification factor for a single photoelectron at the level of 106 at room temperature. Measurements of gain, photon detection efficiency, one-photoelectron resolution, noise and dark current for different types of MAPD were performed and compared

  4. Photodiodes based on fullerene semiconductor

    Energy Technology Data Exchange (ETDEWEB)

    Voz, C. [Micro and Nano Technology Group (MNT), Departament Enginyeria Electronica, Universitat Politecnica Catalunya, c/ Jordi Girona 1-3 Campus Nord C4, 08034-Barcelona (Spain)], E-mail: cvoz@eel.upc.edu; Puigdollers, J. [Micro and Nano Technology Group (MNT), Departament Enginyeria Electronica, Universitat Politecnica Catalunya, c/ Jordi Girona 1-3 Campus Nord C4, 08034-Barcelona (Spain); Cheylan, S. [ICFO- Institut de Ciencies Fotoniques, Mediterranean Technology Park, Av. del Canal Olimpic s/n, 08860-Castelldefels (Spain); Fonrodona, M.; Stella, M.; Andreu, J. [Solar Energy Group, Departament Fisica Aplicada i Optica, Universitat de Barcelona, Avda. Diagonal 647, 08028-Barcelona (Spain); Alcubilla, R. [Micro and Nano Technology Group (MNT), Departament Enginyeria Electronica, Universitat Politecnica Catalunya, c/ Jordi Girona 1-3 Campus Nord C4, 08034-Barcelona (Spain)

    2007-07-16

    Fullerene thin films have been deposited by thermal evaporation on glass substrates at room temperature. A comprehensive optical characterization was performed, including low-level optical absorption measured by photothermal deflection spectroscopy. The optical absorption spectrum reveals a direct bandgap of 2.3 eV and absorption bands at 2.8 and 3.6 eV, which are related to the creation of charge-transfer excitons. Various photodiodes on indium-tin-oxide coated glass substrates were also fabricated, using different metallic contacts in order to compare their respective electrical characteristics. The influence of a poly(3,4-ethylenedioxythiophene) poly(styrenesulfonate) buffer layer between the indium-tin-oxide electrode and the fullerene semiconductor is also demonstrated. These results are discussed in terms of the workfunction for each electrode. Finally, the behaviour of the external quantum efficiency is analyzed for the whole wavelength spectrum.

  5. High quantum efficiency annular backside silicon photodiodes for reflectance pulse oximetry in wearable wireless body sensors

    International Nuclear Information System (INIS)

    The development of annular photodiodes for use in a reflectance pulse oximetry sensor is presented. Wearable and wireless body sensor systems for long-term monitoring require sensors that minimize power consumption. We have fabricated large area 2D ring-shaped silicon photodiodes optimized for minimizing the optical power needed in reflectance pulse oximetry. To simplify packaging, backside photodiodes are made which are compatible with assembly using surface mounting technology without pre-packaging. Quantum efficiencies up to 95% and area-specific noise equivalent powers down to 30 fW Hz-1/2 cm-1 are achieved. The photodiodes are incorporated into a wireless pulse oximetry sensor system embedded in an adhesive patch presented elsewhere as 'The Electronic Patch'. The annular photodiodes are fabricated using two masked diffusions of first boron and subsequently phosphor. The surface is passivated with a layer of silicon nitride also serving as an optical filter. As the final process, after metallization, a hole in the center of the photodiode is etched using deep reactive ion etch.

  6. Response of commercial photodiodes for application in alpha spectrometry

    International Nuclear Information System (INIS)

    The use of semiconductor detector for ionizing radiations spectrometry and dosimetry has been growing in the last years due to its characteristics of fast response, good efficiency for unit of volume and excellent resolution. Since the working principle of a semiconductor detector is identical to that of the semiconductor junctions of commercial electronic devices, a study was carried out on the PIN-photodiodes response, aiming at set up an alpha spectrometry system of low cost and easy acquisition. The tested components have the following characteristics: active area varying between 13.2 and 25 mm2, window of thickness equal or lower than 57 mg/cm2, depletion area with depth ranging from 10 to 300 μm and junction capacitance of 16 to 20 pF.Am-241, Cm-244, U-233 and Np-237 alpha sources produced by electrodeposition were used to evaluate the response of the devices as a function of the radiation energy. The results have shown a linear response of the photodiodes with the incident alpha particle energy. The resolution varied from 1.6% to 0.45% and the better detection efficiency found was about 7.2. The low cost of the photodiodes and the excellent results obtained at room temperature make such components very attractive for teaching purposes for environmental monitoring. (author)

  7. Large-mode-area hybrid photonic crystal fiber amplifier at 1178 nm

    DEFF Research Database (Denmark)

    Petersen, Sidsel Rübner; Chen, Mingchen; Shirakawa, Akira; Olausson, Christina Bjarnal Thulin; Alkeskjold, Thomas Tanggaard; Lægsgaard, Jesper

    2015-01-01

    Amplification of 1178 nm light is demonstrated in a large-mode-area single-mode ytterbium-doped hybrid photonic crystal fiber, relying on distributed spectral filtering of spontaneous emission at shorter wavelengths. An output power of 53 W is achieved with 29 dB suppression of parasitic lasing...

  8. X-ray spectrometry with Si photodiodes

    International Nuclear Information System (INIS)

    This work envisages the development of a high resolution electromagnetic radiation spectrometry system, based on the use of low cost commercial silicon photodiodes (Siemens SFH00206 and Hamamatsu S2506-02). In order to improve the performance of these photodiodes for high resolution X-ray spectrometry, a cooling system using Peltier cells was developed to decrease the temperature of both photodiode and preamplifier's FET. The best values of the resolution for the 59.5 keV 241 Am γ-ray line, at 9 deg C, were found to be 2.10 keV and 1.82 keV for the Siemens SFH00206 and Hamamatsu S250602 photodiodes respectively. (author)

  9. Electromagnetic radiation spectrometer with Si photodiodes

    International Nuclear Information System (INIS)

    This work envisages the development of a high resolution electromagnetic radiation spectrometry system, based on the use of low cost commercial silicon photodiodes (Siemens SFH00206 and Hamamatsu S2506-02). In order to improve the performance of these photodiodes for high resolution x-ray spectrometry, a cooling system using Peltier cells was developed to decrease the temperature of both photodiode and preamplifier's FET. The best values of the resolution for the 59,5 keV 241Am γ-ray line, at 9 deg C, were found to be 2,10 keV and 1,82 keV for the Siemens SFH00206 and Hamamatsu S2506-02 photodiodes respectively. (author)

  10. Hybrid Wavelength Routed and Optical Packet Switched Ring Networks for the Metropolitan Area Network

    DEFF Research Database (Denmark)

    Nord, Martin

    Increased data traffic in the metropolitan area network calls for new network architectures. This paper evaluates optical ring architectures based on optical packet switching, wavelength routing, and hybrid combinations of the two concepts. The evaluation includes overall throughput and fairness...... aspects in both uniform and unbalanced traffic scenarios, for both Poisson and bursty input traffic. Simulations show a trade-off between performance and complexity. Whilst the static wavelength routed optical network is a good solutions for uniform traffic, the proposed hybrid architectures are more...

  11. Extraction of handwritten areas from colored image of bank checks by an hybrid method

    CERN Document Server

    Haboubi, Sofiene

    2011-01-01

    One of the first step in the realization of an automatic system of check recognition is the extraction of the handwritten area. We propose in this paper an hybrid method to extract these areas. This method is based on digit recognition by Fourier descriptors and different steps of colored image processing . It requires the bank recognition of its code which is located in the check marking band as well as the handwritten color recognition by the method of difference of histograms. The areas extraction is then carried out by the use of some mathematical morphology tools.

  12. Sustainable electricity generation by solar pv/diesel hybrid system without storage for off grids areas

    Science.gov (United States)

    Azoumah, Y.; Yamegueu, D.; Py, X.

    2012-02-01

    Access to energy is known as a key issue for poverty reduction. The electrification rate of sub Saharan countries is one of the lowest among the developing countries. However this part of the world has natural energy resources that could help raising its access to energy, then its economic development. An original "flexy energy" concept of hybrid solar pv/diesel/biofuel power plant, without battery storage, is developed in order to not only make access to energy possible for rural and peri-urban populations in Africa (by reducing the electricity generation cost) but also to make the electricity production sustainable in these areas. Some experimental results conducted on this concept prototype show that the sizing of a pv/diesel hybrid system by taking into account the solar radiation and the load/demand profile of a typical area may lead the diesel generator to operate near its optimal point (70-90 % of its nominal power). Results also show that for a reliability of a PV/diesel hybrid system, the rated power of the diesel generator should be equal to the peak load. By the way, it has been verified through this study that the functioning of a pv/Diesel hybrid system is efficient for higher load and higher solar radiation.

  13. Sustainable electricity generation by solar pv/diesel hybrid system without storage for off grids areas

    International Nuclear Information System (INIS)

    Access to energy is known as a key issue for poverty reduction. The electrification rate of sub Saharan countries is one of the lowest among the developing countries. However this part of the world has natural energy resources that could help raising its access to energy, then its economic development. An original 'flexy energy' concept of hybrid solar pv/diesel/biofuel power plant, without battery storage, is developed in order to not only make access to energy possible for rural and peri-urban populations in Africa (by reducing the electricity generation cost) but also to make the electricity production sustainable in these areas. Some experimental results conducted on this concept prototype show that the sizing of a pv/diesel hybrid system by taking into account the solar radiation and the load/demand profile of a typical area may lead the diesel generator to operate near its optimal point (70-90 % of its nominal power). Results also show that for a reliability of a PV/diesel hybrid system, the rated power of the diesel generator should be equal to the peak load. By the way, it has been verified through this study that the functioning of a pv/Diesel hybrid system is efficient for higher load and higher solar radiation.

  14. Frequency conversion through spontaneous degenerate four wave mixing in large mode area hybrid photonic crystal fibers

    DEFF Research Database (Denmark)

    Petersen, Sidsel Rübner; Alkeskjold, Thomas Tanggaard; Olausson, Christina Bjarnal Thulin;

    2014-01-01

    Frequency conversion through spontaneous degenerate four wave mixing (FWM) is investigated in large mode area hybrid photonic crystal fibers. Different FWM processes are observed, phasematching between fiber modes of orthogonal polarization, intermodal phasematching across bandgaps, and intramodal...... phasematching within the same transmission band as the one containing the pump laser. Furthermore first and second order Raman scattering is observed. The interplay between the different FWM processes and Raman scattering are investigated....

  15. Hybrid Wavelength Routed and Optical Packet Switched Ring Networks for the Metropolitan Area Network

    OpenAIRE

    Nord, Martin

    2005-01-01

    Increased data traffic in the metropolitan area network calls for new network architectures. This paper evaluates optical ring architectures based on optical packet switching, wavelength routing, and hybrid combinations of the two concepts. The evaluation includes overall throughput and fairness aspects in both uniform and unbalanced traffic scenarios, for both Poisson and bursty input traffic. Simulations show a trade-off between performance and complexity. Whilst the static wavelength route...

  16. Effect of temperature on silicon PIN photodiode radiation detector

    Energy Technology Data Exchange (ETDEWEB)

    Kim, Han Soo; Jeong, Man Hee; Kim, Young Soo; HA, Jang Ho [Korea Atomic Energy Research Institute, Daejeon (Korea, Republic of); Cho, Seong Yeon [Yonsei University, Wonju (Korea, Republic of)

    2014-03-15

    One of the noise sources of a semiconductor radiation detector is thermal noise, which degrades the performance, such as the energy resolution and unexpected random pulse signals. In this study, PIN photodiode radiation detectors, with different active areas were designed and fabricated for an experimental comparison of the energy resolutions for different temperatures and capacitances by using a Ba-133 calibration gamma-ray source. The experimental temperature was approximately in the range from -7 to 24 .deg. C and was controlled by using a peltier device. The design considerations and the electrical characteristics, such as the I-V and the C-V characteristics, are also addressed.

  17. Low-energy X-ray and gamma spectrometry using silicon photodiodes

    International Nuclear Information System (INIS)

    The use of semiconductor detectors for radiation detection has increased in recent years due to advantages they present in comparison to other types of detectors. As the working principle of commercially available photodiodes is similar to the semiconductor detector, this study was carried out to evaluate the use of Si photodiodes for low energy x-ray and gamma spectrometry. The photodiodes investigated were SFH-205, SFH-206, BPW-34 and XRA-50 which have the following characteristics: active area of 0,07 cm2 and 0,25 cm2, thickness of the depletion ranging from 100 to 200 μm and junction capacitance of 72 pF. The photodiode was polarized with a reverse bias and connected to a charge sensitive pre-amplifier, followed by a amplifier and multichannel pulse analyzer. Standard radiation source used in this experiment were 241 Am, 109 Cd, 57 Co and 133 Ba. The X-ray fluorescence of lead and silver were also measured through K- and L-lines. All the measurements were made with the photodiodes at room temperature.The results show that the responses of the photodiodes very linear by the x-ray energy and that the energy resolution in FWHM varied between 1.9 keV and 4.4 keV for peaks corresponding to 11.9 keV to 59 keV. The BPW-34 showed the best energy resolution and the lower dark current. The full-energy peak efficiency was also determined and it was observed that the peak efficiency decreases rapidly above 50 keV. The resolution and efficiency are similar to the values obtained with other semiconductor detectors, evidencing that the photodiodes used in that study can be used as a good performance detector for low energy X-ray and gamma spectrometry. (author)

  18. Design and characterization of avalanche photodiodes in submicron CMOS technologies

    Science.gov (United States)

    Pancheri, L.; Bendib, T.; Dalla Betta, G.-F.; Stoppa, D.

    2014-03-01

    The fabrication of Avalanche Photodiodes (APDs) in CMOS processes can be exploited in several application domains, including telecommunications, time-resolved optical detection and scintillation detection. CMOS integration allows the realization of systems with a high degree of parallelization which are competitive with hybrid solutions in terms of cost and complexity. In this work, we present a linear-mode APD fabricated in a 0.15μm process, and report its gain and noise characterization. The experimental observations can be accurately predicted using Hayat dead-space noise model. Device simulations based on dead-space model are then used to discuss the current status and the perspectives for the integration of high-performance low-noise devices in standard CMOS processes.

  19. Tri-generation based hybrid power plant scheduling for renewable resources rich area with energy storage

    International Nuclear Information System (INIS)

    Highlights: • Involves scheduling of the tri-generation based hybrid power plant. • Utilization of renewable energy through energy storage is discussed. • Benefits of the proposed model are illustrated. • Energy efficient and environmental friendly dispatch is analyzed. • Modeled scheduling problem is applicable to any fuel enriched area. - Abstract: Solving power system scheduling is crucial to ensure smooth operations of the electric power industry. Effective utilization of available conventional and renewable energy sources (RES) by tri-generation and with the aid of energy storage facilities (ESF) can ensure clean and energy efficient power generation. Such power generation can play an important role in countries, like Saudi Arabia, where abundant fossil fuels (FF) and renewable energy sources (RES) are available. Hence, effective modeling of such hybrid power systems scheduling is essential in such countries based on the available fuel resources. The intent of this paper is to present a simple model for tri-generation based hybrid power system scheduling for energy resources rich area in presence of ESF, to ensure optimum fuel utilization and minimum pollutant emissions while meeting the power demand. This research points an effective operation strategy which ensure a clean and energy efficient power scheduling by exploiting available energy resources effectively. Hence, it has an important role in current and future power generation. In order to illustrate the benefits of the presented approach a clean and energy efficient hybrid power supply scheme for King Saud University (KSU), Saudi Arabia, is proposed and analyzed here. Results show that the proposed approach is very suitable for KSU since adequate solar power is available during its peak demand periods

  20. Modeling And Simulation As The Basis For Hybridity In The Graphic Discipline Learning/Teaching Area

    Directory of Open Access Journals (Sweden)

    Jana Žiljak Vujić

    2009-01-01

    Full Text Available Only some fifteen years have passed since the scientific graphics discipline was established. In the transition period from the College of Graphics to «Integrated Graphic Technology Studies» to the contemporary Faculty of Graphics Arts with the University in Zagreb, three main periods of development can be noted: digital printing, computer prepress and automatic procedures in postpress packaging production. Computer technology has enabled a change in the methodology of teaching graphics technology and studying it on the level of secondary and higher education. The task has been set to create tools for simulating printing processes in order to master the program through a hybrid system consisting of methods that are separate in relation to one another: learning with the help of digital models and checking in the actual real system. We are setting a hybrid project for teaching because the overall acquired knowledge is the result of completely different methods. The first method is on the free programs level functioning without consequences. Everything remains as a record in the knowledge database that can be analyzed, statistically processed and repeated with new parameter values of the system being researched. The second method uses the actual real system where the results are in proving the value of new knowledge and this is something that encourages and stimulates new cycles of hybrid behavior in mastering programs. This is the area where individual learning incurs. The hybrid method allows the possibility of studying actual situations on a computer model, proving it on an actual real model and entering the area of learning envisaging future development.

  1. Modeling and Simulation as the Basis for Hybridity in the Graphic Discipline Learning/Teaching Area

    Directory of Open Access Journals (Sweden)

    Vilko Ziljak

    2009-11-01

    Full Text Available Only some fifteen years have passed since the scientific graphics discipline was established. In the transition period from the College of Graphics to «Integrated Graphic Technology Studies» to the contemporary Faculty of Graphics Arts with the University in Zagreb, three main periods of development can be noted: digital printing, computer prepress and automatic procedures in postpress packaging production. Computer technology has enabled a change in the methodology of teaching graphics technology and studying it on the level of secondary and higher education. The task has been set to create tools for simulating printing processes in order to master the program through a hybrid system consisting of methods that are separate in relation to one another: learning with the help of digital models and checking in the actual real system.  We are setting a hybrid project for teaching because the overall acquired knowledge is the result of completely different methods. The first method is on the free programs level functioning without consequences. Everything remains as a record in the knowledge database that can be analyzed, statistically processed and repeated with new parameter values of the system being researched. The second method uses the actual real system where the results are in proving the value of new knowledge and this is something that encourages and stimulates new cycles of hybrid behavior in mastering programs. This is the area where individual learning incurs. The hybrid method allows the possibility of studying actual situations on a computer model, proving it on an actual real model and entering the area of learning envisaging future development.

  2. Photodiode and photomultiplier areal sensitivity anomalies

    Science.gov (United States)

    Youngbluth, O., Jr.

    1977-01-01

    Several silicon photodiodes and photomultipliers were tested to determine signal variations as a light spot was scanned over the photosensitive surface of these detectors. Qualitative and quantitative data is presented to demonstrate the areal sensitivity anomalies. These anomalies are related back to the fabrication techniques of the manufacturers.

  3. Study of hybrid power system potential to power agricultural water pump in mountain area

    Science.gov (United States)

    Syuhada, Ahmad; Mubarak, Amir Zaki; Maulana, M. Ilham

    2016-03-01

    As industry and Indonesian economy grow fast, there are a lot of agricultural land has changed into housing and industrial land. This causes the agricultural land moves to mountain area. In mountainous agricultural area, farmers use the water resources of small rivers in the groove of the mountain to irrigate the farmland. Farmers use their power to lift up water from the river to their land which causes inefectivity in the work of the farmers. Farmers who have capital utilize pump to raise water to their land. The only way to use pump in mountain area is by using fuel energy as there is no electricity, and the fuel price in mountain area is very expensive. Based on those reasons it is wise to consider the exploration of renewable energy available in the area such as solar energy, wind energy and hybrid energy. This study analyses the potential of the application of hybrid power plant, which is the combination of solar and wind energy, to power agricultural pump. In this research, the data of wind speed and solar radiation are collected from the measurement of BMKG SMPK Plus Sare. Related to the solar energy, the photovoltaic output power calculation is 193 W with duration of irradiation of 5 hours/day. While for the wind energy, the output power of the wind turbine is 459.84 W with blade diameter of 3 m and blow duration of 7 hours/day. The power of the pump is 558 W with 8 hours of usage, and the water capacity is 2.520 liters/hour for farmland with the area of 15 ha. Based on the analysis result, the designed system will generate electricity of 3.210 kW/year with initial investment of US 14,938.

  4. 4H-SiC Schottky photodiodes for ultraviolet flame detection

    Science.gov (United States)

    Mazzillo, M.; Sciuto, A.

    2015-10-01

    In the last few years silicon carbide (SiC) has emerged as an appropriate material for the detection of very low ultraviolet photon fluxes even at elevated temperatures. In this paper we report on the electro-optical characteristics of large area interdigit Ni2Si/4H-SiC photodiodes in TO metal can package with a suitable molded cap quartz window with high transmission in the ultraviolet wavelength range. The detectors have been tested for the detection of the ultraviolet component of the yellow flame emitted by a small candle, showing good sensitivity for very weak photon fluxes notwithstanding the linear operation condition of the photodiodes.

  5. Performance of new Micro-pixel Avalanche Photodiodes from Zecotek Photonics

    Energy Technology Data Exchange (ETDEWEB)

    Sadygov, Z. [Institute of Physics, Javid Ave. 33, AZ 1143 Baku (Azerbaijan); Zecotek Photonics Inc., Vancouver, BC V6T 1Z3 (Canada); Joint Institute for Nuclear Research, 141980 Dubna (Russian Federation)], E-mail: zsadygov@physics.ab.az; Zerrouk, A.F.; Ariffin, A.; Khorev, S.; Sasam, J. [Zecotek Photonics Inc., Vancouver, BC V6T 1Z3 (Canada); Zhezher, V.; Anphimov, N. [Joint Institute for Nuclear Research, 141980 Dubna (Russian Federation); Dovlatov, A.; Musaev, M.; Muxtarov, R.; Safarov, N. [Institute of Physics, Javid Ave. 33, AZ 1143 Baku (Azerbaijan)

    2009-10-21

    Two new types of Micro-pixel Avalanche Photodiodes (MAPD) with sensitive area 3x3 mm{sup 2} and pixel densities of 15 000 and 40 000/mm{sup 2}, respectively, were designed and produced by Zecotek Photonics, Inc. Design and operation principles of these devices are described in this work. Measurement results of basic parameters are given as well.

  6. Bio-inspired nano-photodiode for Low Light, High Resolution and crosstalk-free CMOS image sensing

    KAUST Repository

    Saffih, Faycal

    2011-05-01

    Previous attempts have been devoted to mimic biological vision intelligence at the architectural system level. In this paper, a novel imitation of biological visual system intelligence is suggested, at the device level with the introduction of novel photodiode morphology. The proposed bio-inspired nanorod photodiode puts the depletion region length on the path of the incident photon instead of on its width, as the case is with the planar photodiodes. The depletion region has a revolving volume to increase the photodiode responsivity, and thus its photosensitivity. In addition, it can virtually boost the pixel fill factor (FF) above the 100% classical limit due to decoupling of its vertical sensing area from its limited planar circuitry area. Furthermore, the suggested nanorod photodiode photosensitivity is analytically proven to be higher than that of the planar photodiode. We also show semi-empirically that the responsivity of the suggested device varies linearly with its height; this important feature has been confirmed using Sentaurus simulation. The proposed nano-photorod is believed to meet the increasingly stringent High-Resolution-Low-Light (HRLL) detection requirements of the camera-phone and biomedical imaging markets. © 2011 IEEE.

  7. Delay-area trade-off for MPRM circuits based on hybrid discrete particle swarm optimization

    Institute of Scientific and Technical Information of China (English)

    Jiang Zhidi; Wang Zhenhai; Wang Pengjun

    2013-01-01

    Polarity optimization for mixed polarity Reed-Muller (MPRM) circuits is a combinatorial issue.Based on the study on discrete particle swarm optimization (DPSO) and mixed polarity,the corresponding relation between particle and mixed polarity is established,and the delay-area trade-off of large-scale MPRM circuits is proposed.Firstly,mutation operation and elitist strategy in genetic algorithm are incorporated into DPSO to further develop a hybrid DPSO (HDPSO).Then the best polarity for delay and area trade-off is searched for large-scale MPRM circuits by combining the HDPSO and a delay estimation model.Finally,the proposed algorithm is testified by MCNC Benchmarks.Experimental results show that HDPSO achieves a better convergence than DPSO in terms of search capability for large-scale MPRM circuits.

  8. Delay-area trade-off for MPRM circuits based on hybrid discrete particle swarm optimization

    International Nuclear Information System (INIS)

    Polarity optimization for mixed polarity Reed—Muller (MPRM) circuits is a combinatorial issue. Based on the study on discrete particle swarm optimization (DPSO) and mixed polarity, the corresponding relation between particle and mixed polarity is established, and the delay-area trade-off of large-scale MPRM circuits is proposed. Firstly, mutation operation and elitist strategy in genetic algorithm are incorporated into DPSO to further develop a hybrid DPSO (HDPSO). Then the best polarity for delay and area trade-off is searched for large-scale MPRM circuits by combining the HDPSO and a delay estimation model. Finally, the proposed algorithm is testified by MCNC Benchmarks. Experimental results show that HDPSO achieves a better convergence than DPSO in terms of search capability for large-scale MPRM circuits. (semiconductor integrated circuits)

  9. Degenerate four wave mixing in large mode area hybrid photonic crystal fibers

    DEFF Research Database (Denmark)

    Petersen, Sidsel Rübner; Alkeskjold, Thomas Tanggaard; Lægsgaard, Jesper

    2013-01-01

    Spontaneous degenerate four wave mixing (FWM) is investigated in large mode area hybrid photonic crystal fibers, in which photonic bandgap guidance and index guidance is combined. Calculations show the parametric gain is maximum on the edge of a photonic bandgap, for a large range of pump...... wavelengths. The FWM products are observed on the edges of a transmission band experimentally, in good agreement with the numerical results. Thereby the bandedges can be used to control the spectral positions of FWM products through a proper fiber design. The parametric gain control combined with a large mode...... area fiber design potentially allows for power scaling of light at wavelengths not easily accessible with e.g. rare earth ions....

  10. Degenerate four wave mixing in large mode area hybrid photonic crystal fibers.

    Science.gov (United States)

    Petersen, Sidsel R; Alkeskjold, Thomas T; Lægsgaard, Jesper

    2013-07-29

    Spontaneous degenerate four wave mixing (FWM) is investigated in large mode area hybrid photonic crystal fibers, in which photonic bandgap guidance and index guidance is combined. Calculations show the parametric gain is maximum on the edge of a photonic bandgap, for a large range of pump wavelengths. The FWM products are observed on the edges of a transmission band experimentally, in good agreement with the numerical results. Thereby the bandedges can be used to control the spectral positions of FWM products through a proper fiber design. The parametric gain control combined with a large mode area fiber design potentially allows for power scaling of light at wavelengths not easily accessible with e.g. rare earth ions. PMID:23938682

  11. Fabrication of large-area arrays of hybrid nanostructures on polymer-derived chemically patterned surfaces

    Science.gov (United States)

    Liu, Xiaoying; Nepal, Dhriti; Biswas, Sushmita; Park, Kyoungweon; Vaia, Richard; Nealey, Paul; Air Force Research Laboratories Collaboration; University of Chicago Team

    2014-03-01

    The precise placement and assembly of nanoparticles (NPs) into large-area nanostructure arrays will allow for the design and implementation of advanced nanoscale devices for applications in fields such as quantum computing, optical sensing, superlenses, photocatalysis, photovoltaics, and non-linear optics. Our work is focused on using chemically nanopatterned surfaces to fabricate arrays of hybrid nanostructures with each component of the building block at well-defined positions. The precise chemical contrast patterns with densities and resolution of features created using standard tools of lithography, polymer self-assembly, and surface functionalization allow for control of position and interparticle spacing through selective surface-particle and particle-particle interactions. We have demonstrated the assembly of NPs, including metallic NPs and semiconductor quantum dots, into arrays of hybrid structures with various geometries, such as monomers, dimers, quatrefoils, stripes, and chains. We have developed protocols to fabricate NP arrays over a variety of substrates, which allows for the design and characterization of optical and electronic nanostructures and devices to meet the requirements of various technological applications.

  12. The large-area hybrid-optics CLAS12 RICH detector: Tests of innovative components

    Energy Technology Data Exchange (ETDEWEB)

    Contalbrigo, M., E-mail: contalbrigo@fe.infn.it [INFN Sezione di Ferrara and University of Ferrara (Italy); Baltzell, N. [Argonne National Laboratory, IL (United States); Benmokhtar, F. [Christopher Newport University, VA (United States); Duquesne University, PA (United States); Barion, L. [INFN Sezione di Ferrara and University of Ferrara (Italy); Cisbani, E. [INFN Sezione di Roma – Gruppo Collega to Sanità (Italy); Italian National Institute of Health (Italy); El Alaoui, A. [Universidad Tecnica Federico Santa Maria, Valparaiso (Chile); Argonne National Laboratory, IL (United States); Hafidi, K. [Argonne National Laboratory, IL (United States); Hoek, M. [Glasgow University (United Kingdom); J. Gutenberg Universität, Mainz (Germany); Kubarovsky, V. [Thomas Jefferson National Laboratory, VA (United States); Lagamba, L. [INFN Sezione di Bari, University of Bari (Italy); Lucherini, V. [INFN Laboratori Nazionali di Frascati (Italy); Malaguti, R. [INFN Sezione di Ferrara and University of Ferrara (Italy); Mirazita, M. [INFN Laboratori Nazionali di Frascati (Italy); Montgomery, R. [Glasgow University (United Kingdom); INFN Laboratori Nazionali di Frascati (Italy); Movsisyan, A. [INFN Sezione di Ferrara and University of Ferrara (Italy); Musico, P. [INFN Sezione di Genova (Italy); Orecchini, D.; Orlandi, A. [INFN Laboratori Nazionali di Frascati (Italy); Pappalardo, L.L. [INFN Sezione di Ferrara and University of Ferrara (Italy); Pereira, S. [INFN Laboratori Nazionali di Frascati (Italy); and others

    2014-12-01

    A large area ring-imaging Cherenkov detector has been designed to provide clean hadron identification capability in the momentum range from 3 GeV/c to 8 GeV/c for the CLAS12 experiments at the upgraded 12 GeV continuous electron beam accelerator facility of Jefferson Lab to study the 3D nucleon structure in the yet poorly explored valence region by deep-inelastic scattering, and to perform precision measurements in hadronization and hadron spectroscopy. The adopted solution foresees a novel hybrid optics design based on an aerogel radiator, composite mirrors and densely packed and highly segmented photon detectors. Cherenkov light will either be imaged directly (forward tracks) or after two mirror reflections (large angle tracks). The preliminary results of individual detector component tests and of the prototype performance at test-beams are reported here. - Highlights: • A novel hybrid-optics configuration was proven to work with a large RICH prototype. • Innovative RICH components were studied both in laboratory tests and test-beams. • Aerogel of large Rayleigh scattering length at n=1.05 was characterized. • Novel vs commercially available multi-anode photomultipliers were compared. • The response of SiPM matrices to Cherenkov light was tested at various temperatures.

  13. RESPONSE OF CORN HYBRIDS ON TWO SOIL TYPES OF SLATINA PODRAVINA AREA

    Directory of Open Access Journals (Sweden)

    Manda Antunović

    2002-06-01

    Full Text Available Ten corn hybrids were grown on two soil types of Drava Valley in Slatina area (alluvial soil and pseudogley during two growing seasons (1998 and 1999. The field trials were sown by pneumatic sowing machine in four replicates (exp. plot 14 m2. Planned plant density (PPD depends on the hybrids and it was 71428, 63493 or 58310 plants/ha. Grain yields were calculated on 14% moisture and 90% realization of PPD basis. The earleaf at beginning of silking stage was taken for chemical analysis. The total amount of N was determined by Kjeldahl procedure, while P and K in corn leaves samples were measured by ICP-AES technique after their microwave digestion using concentrated HNO3+H2O2. Mobile fraction of these elements in soils was also determined by ICP-AES technique after their extraction by ammonium acetate-EDTA. Alluvial soil is neutral reaction and contains considerable higher levels of total and mobile fractions of calcium, magnesium and phosphorus, as well as lower levels of potassium in comparison with pseudogley. The growing seasons 1998 and 1999 were favourable for corn growing under conditions of the eastern Croatia. In both year of testing, corn yields on acid soil were about 25% lower in comparison with alluvial soil. The yields of individual hybrids (2-year means were from 10.40 to 12.35 t/ha The higher yields (2-year means on alluvial soil were found by 3 hybrids (OsSK554, OsSK458 and OsSK568exp.: mean 14,01 t/ha, OsSK332, OsSK444, OsSK458exp found Yields above 10 t/ha on acid soil were found by four corn hybrids (OsSK 332, OsSK 444,OsSK458 and OsSK490exp. : mean 10,84 t/ha. Significant influences of growing season on ear-leaf composition were found for N and K, while P concentrations were similar in both years of testing. The higher concentrations of N and K, as well as the lower P concentrations were found in leaves when corn was grown on alluvial soil (means 3.75 and 3.56% N, 2.44 and 2.62% K, 0.344 and 0.327% P, for alluvial soil and

  14. Hybrid multiphase CFD simulation for liquid-liquid interfacial area prediction in annular centrifugal contactors

    Energy Technology Data Exchange (ETDEWEB)

    Wardle, K.E. [Chemical Sciences and Engineering Division, Argonne National Laboratory, Argonne, IL 60439 (United States)

    2013-07-01

    Liquid-liquid contacting equipment used in solvent extraction processes has the dual purpose of mixing and separating two immiscible fluids. Consequently, such devices inherently encompass a wide variety of multiphase flow regimes. A hybrid multiphase computational fluid dynamics (CFD) solver which combines the Eulerian multi-fluid method with VOF (volume of fluid) sharp interface capturing has been developed for application to annular centrifugal contactors. This solver has been extended to enable prediction of mean droplet size and liquid-liquid interfacial area through a single moment population balance method. Simulations of liquid-liquid mixing in a simplified geometry and a model annular centrifugal contactor are reported with droplet breakup/coalescence models being calibrated versus available experimental data. Quantitative comparison is made for two different housing vane geometries and it is found that the predicted droplet size is significantly smaller for vane geometries which result in higher annular liquid holdup.

  15. Hybrid multiphase CFD simulation for liquid-liquid interfacial area prediction in annular centrifugal contactors

    International Nuclear Information System (INIS)

    Liquid-liquid contacting equipment used in solvent extraction processes has the dual purpose of mixing and separating two immiscible fluids. Consequently, such devices inherently encompass a wide variety of multiphase flow regimes. A hybrid multiphase computational fluid dynamics (CFD) solver which combines the Eulerian multi-fluid method with VOF (volume of fluid) sharp interface capturing has been developed for application to annular centrifugal contactors. This solver has been extended to enable prediction of mean droplet size and liquid-liquid interfacial area through a single moment population balance method. Simulations of liquid-liquid mixing in a simplified geometry and a model annular centrifugal contactor are reported with droplet breakup/coalescence models being calibrated versus available experimental data. Quantitative comparison is made for two different housing vane geometries and it is found that the predicted droplet size is significantly smaller for vane geometries which result in higher annular liquid holdup

  16. Silicon photodiode as the two-color detector

    Science.gov (United States)

    Ponomarev, D. B.; Zakharenko, V. A.

    2015-11-01

    This paper describes a silicon photodiode as the two-color photodetector. The work of one photodiode in two spectral ranges is achieved due to the changes of the spectral sensitivity of the photodiodes in the transition from photodiode mode for photovoltaic in the short circuit mode. On the basis of silicon photodiode FD-256 the layout of the spectral ratio pyrometer was assembled and the results of theoretical calculations was confirmed experimentally. The calculated dependences of the coefficient of error of the spectral ratio pyrometer from temperature reverse voltage 10 and 100 V was presented. The calculated dependence of the instrumental error and the assessment of methodological errors of the proposed photodetector spectral ratio was done. According to the results of the presented research was set the task of development photodiode detectors which change the spectral sensitivity depending on the applied voltage.

  17. Status of the development of large area photon detectors based on THGEMs and hybrid MPGD architectures for Cherenkov imaging applications

    Science.gov (United States)

    Alexeev, M.; Birsa, R.; Bradamante, F.; Bressan, A.; Büchele, M.; Chiosso, M.; Ciliberti, P.; Torre, S. Dalla; Dasgupta, S.; Denisov, O.; Duic, V.; Finger, M.; Finger, M.; Fischer, H.; Giorgi, M.; Gobbo, B.; Gregori, M.; Herrmann, F.; Königsmann, K.; Levorato, S.; Maggiora, A.; Martin, A.; Menon, G.; Steiger, K.; Novy, J.; Panzieri, D.; Pereira, F. A.; Santos, C. A.; Sbrizzai, G.; Schiavon, P.; Schopferer, S.; Slunecka, M.; Sozzi, F.; Steiger, L.; Sulc, M.; Takekawa, S.; Tessarotto, F.; Veloso, J. F. C. A.; Makke, N.

    2016-07-01

    We report about the development status of large area gaseous single photon detectors based on a novel hybrid concept for RICH applications. The hybrid concept combines Thick Gaseous Electron Multipliers (THGEMs) coupled to CsI, working as a photon sensitive pre-amplification stage, and Micromegas, as a multiplication stage. The most recent achievements within the research and development programme consist in the assembly and study of 300 × 300mm2 hybrid photon detectors, the optimization of front-end electronics, and engineering towards large area detectors. Hybrid detectors with an active area of 300 × 300mm2 have been successfully operated in laboratory conditions and at a CERN PS T10 test beam, achieving effective gains in the order of 105 and good time resolution (σ = 7 ns); APV25 front-end chips have been coupled to the detector resulting in noise levels lower than 1000 electrons; the production and characterization of 300 × 600mm2 THGEMs is ongoing. A set of hybrid detectors with 600 × 600mm2 active area is envisaged to upgrade COMPASS RICH-1 at CERN in 2016.

  18. Nano-multiplication region avalanche photodiodes and arrays

    Science.gov (United States)

    Zheng, Xinyu (Inventor); Pain, Bedabrata (Inventor); Cunningham, Thomas J. (Inventor)

    2011-01-01

    An avalanche photodiode with a nano-scale reach-through structure comprising n-doped and p-doped regions, formed on a silicon island on an insulator, so that the avalanche photodiode may be electrically isolated from other circuitry on other silicon islands on the same silicon chip as the avalanche photodiode. For some embodiments, multiplied holes generated by an avalanche reduces the electric field in the depletion region of the n-doped and p-doped regions to bring about self-quenching of the avalanche photodiode. Other embodiments are described and claimed.

  19. Investigation of a photon counting avalanche photodiode from Hamamatsu photonics

    Science.gov (United States)

    Britvitch, I.; Musienko, Y.; Renker, D.

    2006-11-01

    Multi-cell avalanche photodiodes (APDs) operating in Geiger mode have been shown to be a very promising alternative to photomultiplier tubes for the detection of single photons at room temperature. Like a photomultiplier they have high gain and a fast rise time and they are insensitive to pickup. Beyond it they operate in high magnetic fields, are compact and need a relatively low bias voltage. It is expected that the MOS production technique makes them cheap. Recently PSI and Hamamatsu Photonics worked together for the development of a radiation-hard APD for CMS ECAL and had very good success. The development continued based on a similar design for a photon counting multielement Geiger-mode APD with an area of 1×1 mm 2. The properties of this device have been measured and will be reported.

  20. Investigation of a photon counting avalanche photodiode from Hamamatsu photonics

    Energy Technology Data Exchange (ETDEWEB)

    Britvitch, I. [ETH Zuerich (Switzerland); Musienko, Y. [Northeastern University, Boston (United States); Renker, D. [Paul Scherrer Institute, Villigen PSI, 5232 Villigen (Switzerland)]. E-mail: dieter.renker@psi.ch

    2006-11-01

    Multi-cell avalanche photodiodes (APDs) operating in Geiger mode have been shown to be a very promising alternative to photomultiplier tubes for the detection of single photons at room temperature. Like a photomultiplier they have high gain and a fast rise time and they are insensitive to pickup. Beyond it they operate in high magnetic fields, are compact and need a relatively low bias voltage. It is expected that the MOS production technique makes them cheap. Recently PSI and Hamamatsu Photonics worked together for the development of a radiation-hard APD for CMS ECAL and had very good success. The development continued based on a similar design for a photon counting multielement Geiger-mode APD with an area of 1x1 mm{sup 2}. The properties of this device have been measured and will be reported.

  1. Investigation of a photon counting avalanche photodiode from Hamamatsu photonics

    International Nuclear Information System (INIS)

    Multi-cell avalanche photodiodes (APDs) operating in Geiger mode have been shown to be a very promising alternative to photomultiplier tubes for the detection of single photons at room temperature. Like a photomultiplier they have high gain and a fast rise time and they are insensitive to pickup. Beyond it they operate in high magnetic fields, are compact and need a relatively low bias voltage. It is expected that the MOS production technique makes them cheap. Recently PSI and Hamamatsu Photonics worked together for the development of a radiation-hard APD for CMS ECAL and had very good success. The development continued based on a similar design for a photon counting multielement Geiger-mode APD with an area of 1x1 mm2. The properties of this device have been measured and will be reported

  2. Evaluation of lattice mismatched InGaAs layers and photodiode arrays by scanning photoluminescence

    International Nuclear Information System (INIS)

    The development of photodetectors and photodiode arrays with spectral response up to 2.5 μm is important for space applications and optical fiber communication. Lattice mismatched InGaAs/InP heterostructures appear promising for such applications. However, the quality and the uniformity of lattice mismatched InGaAs layers are extremely sensitive to process conditions and must be carefully controlled. The authors have shown recently that room temperature scanning photoluminescence (SPL) measurements allow us to reveal in a fast non-invasive way a large number of defects and non-uniformities in such layers. The objective of this paper is to study in detail the correlation between the results of the SPL measurements and the electrical characteristics of completed PIN photodiodes. Linear arrays of PIN photodiodes (30 μm x 60 μm) were manufactured in planar technology using Zn diffusion into InP/InGaAs/InP/InP heterostructures grown by MOCVD. SPL measurements (room temperature, 1 μm resolution) were performed after the epitaxy and in the active area of the completed photodiodes. As obtained results were compared with electrical characteristics of the devices (I-V, DLTS)

  3. Electrical crosstalk in front-illuminated photodiode array with different guard ring designs for medical CT applications

    International Nuclear Information System (INIS)

    This paper presents electrical crosstalk studies on front-illuminated photodiode arrays for medical computed tomography (CT) applications. Crosstalk is an important factor to the system noise and image quality. The electrical crosstalk depends on silicon substrate properties and photodiode structures. The photodiode samples employed in this paper are planar processed on high-resistivity n-type silicon substrate, resulting in a p+/n-/n+ diode structure. Two types of guard ring structures are designed and applied to the same geometry of two-dimensional photodiode arrays. One structure is an n guard ring in the gap area between pixels, and the other structure is an additional p+ guard ring around each pixel together with the n guard ring. A 10 μm light spot with wavelength of 525 nm is used to scan across the surface of the photodiode array in the electrical crosstalk measurements. The electrical currents of two neighbor pixels are measured and the results are compared between two guard ring designs. The design with the p+ guard ring structure gives better electrical crosstalk suppression. Moreover, the measurement results show much smaller influence on surrounding pixels with the p+ guard ring structure in the case of disconnected pixel. Besides the electrical crosstalk, the light sensitivity within the gap area is also discussed between two guard ring designs.

  4. Electrical crosstalk in front-illuminated photodiode array with different guard ring designs for medical CT applications

    Energy Technology Data Exchange (ETDEWEB)

    Ji Fan [Detection Technology Inc., Espoo (Finland); Helsinki University of Technology, Espoo (Finland)], E-mail: ji.fan@deetee.com; Juntunen, Mikko; Hietanen, Iiro [Detection Technology Inc., Espoo (Finland)

    2009-08-01

    This paper presents electrical crosstalk studies on front-illuminated photodiode arrays for medical computed tomography (CT) applications. Crosstalk is an important factor to the system noise and image quality. The electrical crosstalk depends on silicon substrate properties and photodiode structures. The photodiode samples employed in this paper are planar processed on high-resistivity n-type silicon substrate, resulting in a p+/n-/n+ diode structure. Two types of guard ring structures are designed and applied to the same geometry of two-dimensional photodiode arrays. One structure is an n guard ring in the gap area between pixels, and the other structure is an additional p+ guard ring around each pixel together with the n guard ring. A 10 {mu}m light spot with wavelength of 525 nm is used to scan across the surface of the photodiode array in the electrical crosstalk measurements. The electrical currents of two neighbor pixels are measured and the results are compared between two guard ring designs. The design with the p+ guard ring structure gives better electrical crosstalk suppression. Moreover, the measurement results show much smaller influence on surrounding pixels with the p+ guard ring structure in the case of disconnected pixel. Besides the electrical crosstalk, the light sensitivity within the gap area is also discussed between two guard ring designs.

  5. Reproductive effects in hybrid sparrow from a polluted area in Tunisia: Oxidative damage and altered testicular histomorphology.

    Science.gov (United States)

    Amri, Nahed; Hammouda, Abdessalem; Rahmouni, Fatma; Chokri, Med Ali; Chaabane, Rim; Selmi, Slaheddine; Rebai, Tarek; Badraoui, Riadh

    2016-07-01

    Air pollution is a threat for human health and wildlife. The aim of this study is to assess the pathophysiological changes and the oxidative-antioxidative status in testicular tissues of 40 Hybrid sparrows collected from four areas in Gabès city, one of the most polluted areas in Tunisia. The testis histopathological analysis revealed alterations in birds from Ghannouche, the polluted area. The thiobarbituric acid reactive substance (TBARS) levels were higher in testis of birds from the contaminated site compared to less polluted areas indicating oxidative damage to membrane lipids. Antioxidant enzyme activities (superoxide dismutase and catalase) were lower in testis sparrows from the polluted site compared with the reference site, suggesting deficiency of the antioxidant system to compensate for oxidative stress. Overall, our results suggest that the hybrid sparrow offers a suitable model for biomonitoring programs of atmosphere pollutants and the selected biomarkers could be useful tool to evaluate pollution impacts in living organisms. PMID:27039245

  6. Combined performance of photodiode matrices with electron-optical converters

    International Nuclear Information System (INIS)

    As applied to plasma diagnostics using the methods of laser scattering, a necessity to use an electron-optical converter aheat of photodiode matrices is pointed out. Investigation results of the MF-16 integrated photodiode matrix performance in combination with various electron-optical convertes are presented. The possibility to use the system for recording weak pulse optical signals is shown

  7. Photodiode based dosemeter for patient dose monitoring

    International Nuclear Information System (INIS)

    This work describes the performance of a dosemeter, based on a photodiode device, compared to an ionization chamber for on-line dose monitoring applied to the patient during radiotherapy procedures. The dosemeter is constituted by two photodiodes, connected without polarisation to a digital current integrator. The dosemeter was tested in a water phantom and 60Co gamma ray. The depth dose distribution and the variation response with depth of the dosemeter were obtained. The results were compared to those obtained with a secondary standard, take as reference dosemeter. The response of this dosemeter had a deviation of 0,7 % from the ion chamber performance in water phantom measurement. The response variation with depth was less than 1 %. This is better than 8 % of diodes, determined by other authors. The developed device can substitute ion chambers in some routine absorbed dose to water measurements, with advantage of low cost and robust form. It has better performance than diodes, for given dose for patient. (author)

  8. Biogas/photovoltaic hybrid power system for decentralized energy supply of rural areas

    International Nuclear Information System (INIS)

    Biomasses created from natural resources such as firewood, charcoal and forest crops are still the main source of energy in many communities in the developing countries of the world. The absence of modern techniques, in terms of energy conversion and the lack of resource planning, places a great burden on the environment, not only in terms of deforestation but the polluting residual emissions created by the burning of such fuels. Even in some developed countries, it is possible to find rural areas that have no access to the conventional national electrical grid. The lack of this facility is detrimental to the social and economic development of any country or community. Renewable energy systems have been used in many cases to mitigate these problems. The present paper introduces the concept of an alternative Hybrid Power System configuration that combines photovoltaic modules and digesters fuelled by goat manure as the basis for rural sustainable development. Attention is drawn to the Northeast Region of Brazil, one of the largest semi-arid regions in a single country. The regional conditions of Northeast of Brazil are not unique, suggesting that other countries of a similar nature would benefit from the same energy system.

  9. Double junction photodiode for X-ray CMOS sensor IC

    International Nuclear Information System (INIS)

    A CMOS compatible P+/Nwell/Psub double junction photodiode pixel was proposed, which can efficiently detect fluorescence from CsI(Tl) scintillation in an X-ray sensor. Photoelectric and spectral responses of P+/Nwell, Nwell/Psub and P+/Nwell/Psub photodiodes were analyzed and modeled. Simulation results show P+/Nwell/Psub photodiode has larger photocurrent than P+/Nwell photodiode and Nwell/Psub photodiode, and its spectral response is more in accordance with CsI(Tl) fluorescence spectrum. Improved P+/Nwell/Psub photodiode detecting CsI(Tl) fluorescence was designed in CSMC 0.5 μm CMOS process, CTIA (capacitive transimpedance amplifier) architecture was used to readout photocurrent signal. CMOS X-ray sensor IC prototype contains 8 × 8 pixel array and pixel pitch is 100 × 100 μm2. Testing results show the dark current of the improved P+/Nwell/Psub photodiode (6.5 pA) is less than that of P+/Nwell and P+/Nwell/Psub photodiodes (13 pA and 11 pA respectively). The sensitivity of P+/Nwell/Psub photodiode is about 20 pA/lux under white LED. The spectrum response of P+/Nwell/Psub photodiode ranges from 400 nm to 800 nm with a peak at 532 nm, which is in accordance with the fluorescence spectrum of CsI(Tl) in an indirect X-ray sensor. Preliminary testing results show the sensitivity of X-ray sensor IC under Cu target X-ray is about 0.21 V·m2/W or 5097e−/pixel @ 8.05 keV considering the pixel size, integration time and average energy of X-ray photons. (semiconductor devices)

  10. Wedge hybrid plasmonic THz waveguide with long propagation length and ultra-small deep-subwavelength mode area.

    Science.gov (United States)

    Gui, Chengcheng; Wang, Jian

    2015-01-01

    We present a novel design of wedge hybrid plasmonic terahertz (THz) waveguide consisting of a silicon (Si) nanowire cylinder above a triangular gold wedge with surrounded high-density polyethylene as cladding. It features long propagation length and ultra-small deep-subwavelength mode confinement. The mode properties of wedge hybrid plasmonic THz waveguide are comprehensively characterized in terms of propagation length (L), normalized mode area (Aeff/A0), figure of merit (FoM), and chromatic dispersion (D). The designed wedge hybrid plasmonic THz waveguide enables an ultra-small deep-subwavelength mode area which is more than one-order of magnitude smaller compared to previous rectangular one. When choosing the diameter of Si nanowire cylinder, a smaller diameter (e.g. 10 μm) is preferred to achieve longer L and higher FoM, while a larger diameter (e.g. 60 μm) is favorable to obtain smaller Aeff/A0 and higher FoM. We further study the impacts of possible practical fabrication errors on the mode properties. The simulated results of propagation length and normalized mode area show that the proposed wedge hybrid plasmonic THz waveguide is tolerant to practical fabrication errors in geometry parameters such as misalignment in the horizontal direction, variation of wedge tip angle, and variation of wedge tip curvature radius. PMID:26155782

  11. Hybrid Broadband Ground-Motion Simulation Using Scenario Earthquakes for the Istanbul Area

    KAUST Repository

    Reshi, Owais A.

    2016-04-13

    Seismic design, analysis and retrofitting of structures demand an intensive assessment of potential ground motions in seismically active regions. Peak ground motions and frequency content of seismic excitations effectively influence the behavior of structures. In regions of sparse ground motion records, ground-motion simulations provide the synthetic seismic records, which not only provide insight into the mechanisms of earthquakes but also help in improving some aspects of earthquake engineering. Broadband ground-motion simulation methods typically utilize physics-based modeling of source and path effects at low frequencies coupled with high frequency semi-stochastic methods. I apply the hybrid simulation method by Mai et al. (2010) to model several scenario earthquakes in the Marmara Sea, an area of high seismic hazard. Simulated ground motions were generated at 75 stations using systematically calibrated model parameters. The region-specific source, path and site model parameters were calibrated by simulating a w4.1 Marmara Sea earthquake that occurred on November 16, 2015 on the fault segment in the vicinity of Istanbul. The calibrated parameters were then used to simulate the scenario earthquakes with magnitudes w6.0, w6.25, w6.5 and w6.75 over the Marmara Sea fault. Effects of fault geometry, hypocenter location, slip distribution and rupture propagation were thoroughly studied to understand variability in ground motions. A rigorous analysis of waveforms reveal that these parameters are critical for determining the behavior of ground motions especially in the near-field. Comparison of simulated ground motion intensities with ground-motion prediction quations indicates the need of development of the region-specific ground-motion prediction equation for Istanbul area. Peak ground motion maps are presented to illustrate the shaking in the Istanbul area due to the scenario earthquakes. The southern part of Istanbul including Princes Islands show high amplitudes

  12. Investigation of charge collection in a Silicon PIN photodiode

    International Nuclear Information System (INIS)

    Complete text of publication follows. Ion Beam Induced Charge (IBIC) imaging with a 2 MeV He+ microbeam has been used to investigate spectroscopic features and charge transport properties of a Hamamatsu S1223 silicon PIN photodiode. Pulse height spectra were collected with high lateral resolution at different reverse bias values between 0 V and -100 V. Pulse height maps and median energy maps were generated to observe the spatial variations of charge collection properties. Absolute charge collection efficiency (CCE) was calculated along a line including the edge structure of the photodiode. The central sensitive area of the pin diode was found to be very homogeneous without any incomplete charge collection regions, which is of great importance for the applications of pin diodes for radiation spectroscopy. The absolute charge collection efficiency profile calculated through a line shows a broad plateau close to 94 % CCE and an exponential decrease where the electric field is absent. However, low energy satellite peaks and other structures in the spectra were found. For the identification of their origin a narrow, 50 μm wide boundary region was selected which comprised a narrow 7.5 μm wide strip of the central region, a 18 μm wide edge protection region next to it and a 24 μm wide strip from the outermost protection ring. Spectra at different biases taken here are shown in the figure. At zero bias there is only one peak at about 2000 keV. These counts originate from the central region, where CCE is close to 100 %. To the left of this peak two 'truncated shelf' regions are seen, separated by a valley with a tiny peak sitting in it. With increasing bias these structures shift to the right (higher amplitudes), their 'widths' shrink and beginning from the right (highest energy) side they steadily transform into peaks (above 10 V and 60 V for the right and left shelf regions, respectively). This behaviour can be understood by the particular edge protection structure

  13. A high-speed avalanche photodiode

    International Nuclear Information System (INIS)

    High-speed avalanche photodiodes are widely used in optical communication systems. Nowadays, separate absorption charge and multiplication structure is widely adopted. In this article, a structure with higher speed than separate absorption charge and multiplication structure is reported. Besides the traditional absorption layer, charge layer and multiplication layer, this structure introduces an additional charge layer and transit layer and thus can be referred to as separate absorption, charge, multiplication, charge and transit structure. The introduction of the new charge layer and transit layer brings additional freedom in device structure design. The benefit of this structure is that the carrier transit time and device capacitance can be reduced independently, thus the 3 dB bandwidth could be improved by more than 50% in contrast to the separate absorption charge and multiplication structure with the same size. (semiconductor devices)

  14. Avalanche photodiodes for the CMS detector

    CERN Document Server

    Deiters, K; Ingram, Q; Nicol, S; Musienko, I; Patel, B; Renker, D; Reucroft, S; Rusack, R W; Sakhelashvili, T M; Singovsky, A V; Swain, J D; Vikas, P

    2000-01-01

    The CERN LHC experiment CMS has selected for the readout of the barrel crystal calorimeter a 5*5 mm/sup 2/ avalanche photodiode (APD) manufactured by Hamamatsu Photonics. In the detector we will equip each crystal with two APDs for a total of 122400 diodes. As the calorimeter will be almost completely inaccessible during the life of the detector, the assurance that they will survive with a high probability in the intense radiation field is an essential part of the of the APD qualification process. In this paper the properties of the APD selected will be described, as well as the procedures we have developed to assure their radiation hardness and reliability. (2 refs).

  15. Alpha particles spectrometer with photodiode PIN

    International Nuclear Information System (INIS)

    The radiation propagates in form of electromagnetic waves or corpuscular radiation; if the radiation energy causes ionization in environment that crosses it is considered ionizing radiation. To detect radiation several detectors types are used, if the radiation are alpha particles are used detectors proportional type or trace elements. In this work the design results, construction and tests of an alpha particles spectrometer are presented, which was designed starting from a photodiode PIN type. The system design was simulated with a code for electronic circuits. With results of simulation phase was constructed the electronic phase that is coupled to a multichannel analyzer. The resulting electronic is evaluated analyzing the electronic circuit performance before an alphas triple source and alpha radiation that produce two smoke detectors of domestic use. On the tests phase we find that the system allows obtain, in a multichannel, the pulses height spectrum, with which we calibrate the system. (Author)

  16. Diamond photodiodes for x-ray application

    Energy Technology Data Exchange (ETDEWEB)

    Distel, James R [Los Alamos National Laboratory; Smedley, John [BNL; Keister, Jeffrey W [BNL; Muller, Erik [STONY BROOK UNIV.; Jordan - Sweet, Jean [WATSON RESEARCH CENTER; Bohon, Jen [CASE WESTERN RESERVE UNIV.; Dong, Bin [NON LANL

    2009-01-01

    Single crystal high purity CVD diamonds have been metallized and calibrated as photodiodes at the National Synchrotron Light Source (NSLS). Current mode responsivity measurements have been made over a wide range (0.2-28 keV) of photon energies across several beamlines. Linear response has been achieved over ten orders of magnitude of incident flux, along with uniform spatial response. A simple model of responsivity has been used to describe the results, yielding a value of 13.3 {+-} 0.5 eV for the mean pair creation energy. The responsivity vs. photon energy data show a dip for photon energies near the carbon edge (284 eV), indicating incomplete charge collection for carriers created less than one micron from the metallized layer.

  17. A hybrid variational ensemble data assimilation for the HIgh Resolution Limited Area Model (HIRLAM)

    OpenAIRE

    N. Gustafsson; J. Bojarova; O. Vignes

    2014-01-01

    A hybrid variational ensemble data assimilation has been developed on top of the HIRLAM variational data assimilation. It provides the possibility of applying a flow-dependent background error covariance model during the data assimilation at the same time as full rank characteristics of the variational data assimilation are preserved. The hybrid formulation is based on an augmentation of the assimilation control variable with localised weights to be assigned to a set of ense...

  18. CMOS array of photodiodes with electronic processing for 3D optical reconstruction

    Science.gov (United States)

    Hornero, Gemma; Montane, Enric; Chapinal, Genis; Moreno, Mauricio; Herms, Atila

    2001-04-01

    It is well known that laser time-of-flight (TOF) and optical triangulation are the most useful optical techniques for distance measurements. The first one is more suitable for large distances, since for short range of distances high modulation frequencies of laser diodes (©200-500MHz) are needed. For these ranges, optical triangulation is simpler, as it is only necessary to read the projection of the laser point over a linear optical sensor without any laser modulation. Laser triangulation is based on the rotation of the object. This motion shifts the projected point over the linear sensor, resulting on 3D information, by means of the whole readout of the linear sensor in each angle position. On the other hand, a hybrid method of triangulation and TOF can be implemented. In this case, a synchronized scanning of a laser beam over the object results in different arrival times of light to each pixel. The 3D information is carried by these delays. Only a single readout of the linear sensor is needed. In this work we present the design of two different linear arrays of photodiodes in CMOS technology, the first one based on the Optical triangulation measurement and the second one based in this hybrid method (TFO). In contrast to PSD (Position Sensitive Device) and CCDs, CMOS technology can include, on the same chip, photodiodes, control and processing electronics, that in the other cases should be implemented with external microcontrollers.

  19. Characterization of Al0.8Ga0.2As geiger photodiode

    Science.gov (United States)

    Chen, X. J.; Ren, Min; Chen, Yaojia; Johnson, E. B.; Campbell, Joe C.; Christian, James F.

    2015-08-01

    Solid-state photomultipliers (SSPM) are high gain photodetectors composed of Geiger photodiodes (GPD) operating above device breakdown voltage. In scintillation based radiation detection applications, SSPMs fabricated using silicon (SiPMs, MPPCs, etc) provide a compact, low cost alternative to photomultiplier tubes (PMTs), however, the high dark count rate due to its low band-gap (1.1eV) limits the signal-to-noise performance as the silicon SSPM is scaled to large areas. SSPMs fabricated in materials with a larger band-gap have the potential to surmount the performance limitations experienced by silicon. AlGaAs is a material that provides a bandgap from 1.55eV to 2.13 eV, depending on Al concentration. Using high Al concentration AlGaAs to engineer a wideband- gap (>2eV) SSPM is very desirable in terms of reducing dark noise, which promises better signal-to-noise performances when large detector areas is needed. This work describes the development of Geiger photodiodes (GPDs), the individual elements of a SSPM, fabricated in AlGaAs with 80% Al concentration. We present the design of the GPDs, the fabrication process, along with characterization data of fabricated GPD samples. To the best of our knowledge, we have demonstrated for the first time, a passively quenched Geiger photodiode in Al0.8Ga0.2As.

  20. Modular design for narrow scintillating cells with MRS photodiodes in strong magnetic field for ILC detector

    Science.gov (United States)

    Beznosko, D.; Blazey, G.; Dyshkant, A.; Rykalin, V.; Schellpffer, J.; Zutshi, V.

    2006-08-01

    The experimental results for the narrow scintillating elements with effective area about 20 cm 2 are reported. The elements were formed from the single piece of scintillator and were read out via wavelength shifting (WLS) fibers with the Metal/Resistor/Semiconductor (MRS) photodiodes on both ends of each fiber. The count rates were obtained using radioactive source 90Sr, with threshold at about three photoelectrons in each channel and quad coincidences (double coincidences between sensors on each fiber and double coincidences between two neighboring fibers). The formation of the cells from the piece of scintillator by using grooves is discussed, and their performances were tested using the radioactive source by measuring the photomutiplier current using the same WLS fiber. Because effective cell area can be readily enlarged or reduced, this module may be used as an active element for calorimeter or muon system for the design of the future electron-positron linear collider detector. Experimental verification of the performance of the MRS photodiode in a strong magnetic field of 9 T, and the impact a magnet quench at 9.5 T are reported. The measurement method used is described. The results confirm the expectations that the MRS photodiode is insensitive to a strong magnetic field and therefore applicable to calorimetry in the presence of magnetic field. The overall result is of high importance for large multi-channel systems.

  1. SiC Avalanche Photodiodes and Arrays Project

    Data.gov (United States)

    National Aeronautics and Space Administration — Aymont Technology, Inc. (Aymont) will demonstrate the feasibility of SiC p-i-n avalanche photodiodes (APD) arrays. Aymont will demonstrate 4 x 4 arrays of 2 mm2...

  2. A concept for a hadron calorimeter with photodiode readout

    International Nuclear Information System (INIS)

    A concept for a hadron calorimeter will be described. The calorimeter is a scintillator sandwich type with WLS-bars and photodiode readout. Emphasis is put on compactness, high stability, easy fabrication, and safety. (orig.)

  3. The performance of commercial photodiodes for dosimetry in mammography

    International Nuclear Information System (INIS)

    This paper reports the results of an investigation carried out to determine the suitability of using a commercially available photodiode for dosimetry in mammography thereby providing a low cost dosemeter with a direct reading of the radiation dose. A mammographic X-ray generator (Siemens Mammomat 1000) with tube potential in the 23-30 kV range and a constant potential X-ray generator (Pantak) with a W/Mo anode/filter combination were used in this study. The results showed that the photodiode response is highly linear within mammographic dose ranges and that the energy dependence was <3% at tube potentials of 25-30 kV. Good agreement was observed between the incident air kerma measured with both the photodiode and the ionization chamber. These results show the viability of using the photodiode as a dosemeter system in mammography. (authors)

  4. Photodiode Circuit Macro-model for SPICE Simulation

    Institute of Scientific and Technical Information of China (English)

    2006-01-01

    An accurate photodiode circuit macro-model is proposed for SPICE simulation. The definition and implementation of the macro-model is based on carrier stationary continuity equation. In this macro-model, the photodiode is a device of three pins, one for light intensity input and the other two for photocurrent output, which represent the relationship between photocurrent and incident light. The validity of the proposed macro-model is demonstrated with its PSPICE simulation result compared with reported experimental data.

  5. Design and optimization of evanescently coupled waveguide photodiodes

    International Nuclear Information System (INIS)

    We present the design and optimization of evanescently coupled waveguide photodiodes (EC-WPDs) based on the coupling modes theory and the beam propagation method. Efficient focalization of the optical power in the absorber is achieved by an appropriate choice of index matching layers of EC-WPDs. Numerical simulation shows that high-speed (40 GHz), high quantum efficiency (81%) and high linearity photodiodes can be achieved, and EC-WPDs are promising devices for future optical communication systems. (semiconductor devices)

  6. Infrared vertically-illuminated photodiode for chip alignment feedback

    CERN Document Server

    Alloatti, Luca

    2016-01-01

    We report on vertically-illuminated photodiodes fabricated in the GlobalFoundries 45nm 12SOI node and on a packaging concept for optically-interconnected chips. The photodiodes are responsive at 1180 nm, a wavelength currently used in chip-to-chip communications. They have further a wide field-of-view which enables chip-to-board positional feedback in chip-board assemblies. Monolithic integration enables on-chip processing of the positional data.

  7. Automated characterization of single-photon avalanche photodiode

    OpenAIRE

    Aina Mardhiyah M. Ghazali; Audun Nystad Bugge; Sebastien Sauge; Vadim Makarov

    2012-01-01

    We report an automated characterization of a single-photon detector based on commercial silicon avalanche photodiode (PerkinElmer C30902SH). The photodiode is characterized by I-V curves at different illumination levels (darkness, 10 pW and 10 µW), dark count rate and photon detection efficiency at different bias voltages. The automated characterization routine is implemented in C++ running on a Linux computer. ABSTRAK: Kami melaporkan pencirian pengesan foton tunggal secara automatik b...

  8. Optimal generation and reserve dispatch in a multi-area competitive market using a hybrid direct search method

    International Nuclear Information System (INIS)

    With restructuring of the power industry, competitive bidding for energy and ancillary services are increasingly recognized as an important part of electricity markets. It is desirable to optimize not only the generator's bid prices for energy and for providing minimized ancillary services but also the transmission congestion costs. In this paper, a hybrid approach of combining sequential dispatch with a direct search method is developed to deal with the multi-product and multi-area electricity market dispatch problem. The hybrid direct search method (HDSM) incorporates sequential dispatch into the direct search method to facilitate economic sharing of generation and reserve across areas and to minimize the total market cost in a multi-area competitive electricity market. The effects of tie line congestion and area spinning reserve requirement are also consistently reflected in the marginal price in each area. Numerical experiments are included to understand the various constraints in the market cost analysis and to provide valuable information for market participants in a pool oriented electricity market

  9. [Wastewater Quantity and Quality Fluctuation Characteristics of Typical Area of Hybrid Sewage System].

    Science.gov (United States)

    Cheng, Xun; Zhang, Ming-kai; Liu, Yan-chen; Shi, Han-chang

    2016-05-15

    The inflow and infiltration problems cause large fluctuation in wastewater quantity and quality in hybrid sewage system. This seriously challenges the operation and management of sewage system. A multi-point on-line simultaneous monitoring system was established in a typical hybrid sewage system. The key characteristic parameters and their variation features under different circumstances were studied. The result indicated that the daily variation rule was obvious and appeared synchronous among multiple points at normal water level under dry weather flow, but there was no synchronization in conductivity variation among multiple points at high water level under dry weather flow. The statistical distribution range of water level and conductivity was significantly impacted by the seasonal rainfall change under dry weather. The statistical distribution ranges of water level variation rate and conductivity variation rate in specific time were significantly impacted by the rainfall. The response features of water level and conductivity to rainfall intensity and pattern were significantly different under different circumstances. The response sensitivity of conductivity was higher than water level at normal water level and lower at high water level. The database which could support the optimization of operation and management in the hybrid sewage system was proposed based on the distribution law of wastewater quality and quantity fluctuation under dry and wet weather, as well as the variation rate features of wastewater quality and quantity during rainfall obtained using the multi-point on-line simultaneous monitoring system. PMID:27506039

  10. Metropolitian area network services comprised of virtual local area networks running over hybrid fiber-coax and asynchronous transfer mode technologies

    Science.gov (United States)

    Biedron, William S.

    1995-11-01

    Since 1990 there has been a rapid increase in the demand for communication services, especially local and wide area network (LAN/WAN) oriented services. With the introduction of the DFB laser transmitter, hybrid-fiber-coax (HFC) cable plant designs, ATM transport technologies and rf modems, new LAN/WAN services can now be defined and marketed to residential and business customers over existing cable TV systems. The term metropolitan area network (MAN) can be used to describe this overall network. This paper discusses the technical components needed to provision these services as well as provides some perspectives on integration issues. Architecture at the headend and in the backbone is discussed, as well as specific service definitions and the technology issues associated with each. The TCP/IP protocol is suggested as a primary protocol to be used throughout the MAN.

  11. The Technical and Economic Study of Solar-Wind Hybrid Energy System in Coastal Area of Chittagong, Bangladesh

    Directory of Open Access Journals (Sweden)

    Shuvankar Podder

    2015-01-01

    Full Text Available The size optimization and economic evaluation of the solar-wind hybrid renewable energy system (RES to meet the electricity demand of 276 kWh/day with 40 kW peak load have been determined in this study. The load data has been collected from the motels situated in the coastal areas of Patenga, Chittagong. RES in standalone as well as grid connected mode have been considered. The optimal system configurations have been determined based on systems net present cost (NPC and cost of per unit energy (COE. A standalone solar-wind-battery hybrid system is feasible and economically comparable to the present cost of diesel based power plant if 8% annual capacity shortage is allowed. Grid tied solar-wind hybrid system, where more than 70% electricity contribution is from RES, is economically comparable to present grid electricity price. Moreover, grid tied RES results in more than 60% reduction in greenhouse gases emission compared to the conventional grid. Sensitivity analysis has been performed in this study to determine the effect of capital cost variation or renewable resources variation on the system economy. Simulation result of sensitivity analysis has showed that 20% reduction of installation cost results in nearly 9%–12% reductions in cost of per unit energy.

  12. Hybrid Terrestrial-Satellite DVB/IP Infrastructure in Overlay Constellations for Triple-Play Services Access in Rural Areas

    Directory of Open Access Journals (Sweden)

    A. Bourdena

    2010-01-01

    Full Text Available This paper discusses the convergence of digital broadcasting and Internet technologies, by elaborating on the design, implementation, and performance evaluation of a hybrid terrestrial/satellite networking infrastructure, enabling triple-play services access in rural areas. At local/district level, the paper proposes the exploitation of DVB-T platforms in regenerative configurations for creating terrestrial DVB/IP backhaul between the core backbone (in urban areas and a number of intermediate communication nodes distributed within the DVB-T broadcasting footprint (in rural areas. In this way, triple play services that are available at the core backbone, are transferred via the regenerative DVB-T/IP backhaul to the entire district and can be accessed by rural users via the corresponding intermediate node. On the other hand, at regional/national level, the paper proposes the exploitation of a satellite interactive digital video broadcasting platform (DVB S2/RCS as an overlay network that interconnects the regenerative DVB-T/IP platforms, as well as individual users, and services providers, to each other. Performance of the proposed hybrid terrestrial/satellite networking environment is validated through experimental tests that were conducted under real transmission/reception conditions (for the terrestrial segment and via simulation experiments (for the satellite segment at a prototype network infrastructure.

  13. Rapid production of large-area deep sub-wavelength hybrid structures by femtosecond laser light-field tailoring

    Energy Technology Data Exchange (ETDEWEB)

    Wang, Lei; Chen, Qi-Dai, E-mail: chenqd@jlu.edu.cn, E-mail: hbsun@jlu.edu.cn; Yang, Rui; Xu, Bin-Bin; Wang, Hai-Yu [State Key Laboratory on Integrated Optoelectronics, College of Electronic Science and Engineering, Jilin University, 2699 Qianjin Street, Changchun 130012 (China); Yang, Hai; Huo, Cheng-Song; Tu, Hai-Ling [General Research Institute for Nonferrous Metals, Beijing 100088 (China); Sun, Hong-Bo, E-mail: chenqd@jlu.edu.cn, E-mail: hbsun@jlu.edu.cn [State Key Laboratory on Integrated Optoelectronics, College of Electronic Science and Engineering, Jilin University, 2699 Qianjin Street, Changchun 130012 (China); College of Physics, Jilin University, 119 Jiefang Road, Changchun 130023 (China)

    2014-01-20

    The goal of creation of large-area deep sub-wavelength nanostructures by femtosecond laser irradiation onto various materials is being hindered by the limited coherence length. Here, we report solution of the problem by light field tailoring of the incident beam with a phase mask, which serves generation of wavelets. Direct interference between the wavelets, here the first-order diffracted beams, and interference between a wavelet and its induced waves such as surface plasmon polariton are responsible for creation of microgratings and superimposed nanogratings, respectively. The principle of wavelets interference enables extension of uniformly induced hybrid structures containing deep sub-wavelength nanofeatures to macro-dimension.

  14. AIR QUALITY MANAGEMENT STRATEGIES IN URBAN AREAS: EFFECTS OF INTRODUCING HYBRID CARS IN MADRID AND BARCELONA METROPOLITAN AREAS (SPAIN)

    OpenAIRE

    Gonçalves, Maria; Guerrero, Pedro Jiménez; Baldasano, José M.

    2008-01-01

    Abstract: On-road traffic represents the largest source of pollutants’ emissions in urban areas. In southern Mediterranean countries exceedances of the NO2 and PM10 European air quality targets are observed in urban environments. Moreover the budget of urban emissions contributes to the emissions of O3 precursors (mainly NOx) in a region where the concentration of photochemical pollutants still remains a problem especially during summertime. Air quality modeling, used as a management...

  15. Development of a gamma dosimeter using a photodiode

    International Nuclear Information System (INIS)

    In the last years, the application of semiconductor detectors in radiation spectroscopy and dosimetry has increased. Silicon diodes have found utility in radiation dosimetry principally because a diode produces a current approximately 18000 times larger than of an ionization chamber of an equal sensitive volume. As the characteristics of the semiconductor detectors are the same as the common photodiode, a gamma dosimeter using this type of electronic component was developed. The photodiode SFH206 operating in photovoltaic mode was used. An electrometric unit was constructed to measure the current generated in this detector. The results obtained showed: the response of the photodiode was linear with the dose and that variation of 40 degrees in the incidence angle of the radiation caused a variation of 5% in the dose determination; the response reproducibility of the photodiode was studied, and the results showed that the variation coefficient is smaller than 0,02%; the small dimension of the silicon photodiode recommend its use as a gamma dosimeter for medical applications. (author). 19 refs, 32 figs, 1 tab

  16. Photocurrent enhancement of HgTe quantum dot photodiodes by plasmonic gold nanorod structures.

    Science.gov (United States)

    Chen, Mengyu; Shao, Lei; Kershaw, Stephen V; Yu, Hui; Wang, Jianfang; Rogach, Andrey L; Zhao, Ni

    2014-08-26

    The near-field effects of noble metal nanoparticles can be utilized to enhance the performance of inorganic/organic photosensing devices, such as solar cells and photodetectors. In this work, we developed a well-controlled fabrication strategy to incorporate Au nanostructures into HgTe quantum dot (QD)/ZnO heterojunction photodiode photodetectors. Through an electrostatic immobilization and dry transfer protocol, a layer of Au nanorods with uniform distribution and controllable density is embedded at different depths in the ZnO layer for systematic comparison. More than 80 and 240% increments of average short-circuit current density (Jsc) are observed in the devices with Au nanorods covered by ∼7.5 and ∼4.5 nm ZnO layers, respectively. A periodic finite-difference time-domain (FDTD) simulation model is developed to analyze the depth-dependent property and confirm the mechanism of plasmon-enhanced light absorption in the QD layer. The wavelength-dependent external quantum efficiency spectra suggest that the exciton dissociation and charge extraction efficiencies are also enhanced by the Au nanorods, likely due to local electric field effects. The photodetection performance of the photodiodes is characterized, and the results show that the plasmonic structure improves the overall infrared detectivity of the HgTe QD photodetectors without affecting their temporal response. Our fabrication strategy and theoretical and experimental findings provide useful insight into the applications of metal nanostructures to enhance the performance of organic/inorganic hybrid optoelectronic devices. PMID:25020202

  17. A Hybrid and Secure Priority-Guaranteed MAC Protocol for Wireless Body Area Network

    OpenAIRE

    Sana Ullah; Muhammad Imran; Mohammed Alnuem

    2014-01-01

    This paper introduces a hybrid and secure MAC protocol (PMAC) for WBAN. The PMAC protocol uses two contention access periods (CAPs) for accommodating normal and life-critical traffic and one contention-free period (CFP) for accommodating large amount of data packets. The priority-guaranteed CSMA/CA procedure is used in the CAP period, where different priorities are assigned to WBAN nodes by adjusting the backoff window size. In addition, a set of security keys is used to prevent illegal acces...

  18. Screen printing and chip flipping techniques for large area hybrid pixel detectors bonding

    International Nuclear Information System (INIS)

    In the last few years hybrid silicon pixel detectors came to use in high energy physics. One of the most serious problems is the realization of detectors and read out electronics interconnection at high density and low cost. For the upgrade in the forward direction of the DELPHI silicon vertex detector, it has been successfully carried out the bonding of pixel detectors to VLSI read out chips by means of conductive glue screen printing followed by a precise chip flipping procedure. The measured missing contact rate is (0.05±0.03)%. (orig.)

  19. Photosynthetic characteristics of three varieties of Lilium "Oriental Hybrids" in the central areas of Yunnan Province,China

    Institute of Scientific and Technical Information of China (English)

    Wei CHANG; Shuyun LI; Hong HU; Yayu FAN

    2008-01-01

    To understand the ecophysiological adapta-tion of Lilium "Oriental Hybrids", which are grown for their commercial bulbs, the gas exchange, leaf N and chlorophyll content of the three varieties were investigated in the central areas of the Yunnan Province. Among the three varieties, light-saturated photosynthetic rate at ambient CO2 (Amax) of Tiber was the highest, while that of Siberia was the lowest. The difference in the Amax was related to the carboxylation efficiency (CE), leaf mass per unit area and leaf N content per mass, which indicated that their photosynthetic capacity was influenced by the activity and/or the quantity of Rubisco. The three vari-eties had lower photosynthetic saturation points and pho-tosynthetic compensation points, but the photosynthetic rates were not decreased up to 2000 μmol.m-2s-1 of the light intensity. This indicates that the three varieties had broad adaptability to light intensity. There were signifi-cant differences in the photosynthetic optimum temper-ature among the three varieties. Siberia had the highest photosynthetic optimum temperature (25.5℃-34.9℃), and is likely to grow well in warm areas. Sorbonne had the lowest photosynthetic optimum temperature (19.3℃-25.6℃), and its growth is favored in cool areas. Tiber can maintain a high photosynthetic rate within a wide range of temperature. Therefore, Tiber is the most suitable variety for the climate in the central areas of the Yunnan Province, China.

  20. PbS colloidal quantum dot photodiodes for SWIR detection

    OpenAIRE

    Heves, Emre; Gürbüz, Yaşar; Gurbuz, Yasar

    2012-01-01

    In this work, PbS colloidal quantum dot based photodiodes are realized compatible for the integration on ROIC's. Schottky photodiode architecture is selected for its fast response and moderate sensitivity. The device is formed from Indium tin oxide (ITO) anode, the photosensitive PbS layer and a schottky contact formed of titanium and gold. Pinhole-free uniform PbS quantum dots film achieved by optimized layer by layer spin coating process. Solid-state ligand change procedure applied during f...

  1. Gain and noise in very high gain avalanche photodiodes: Theory and experiment

    International Nuclear Information System (INIS)

    Large area silicon avalanche photodiodes (APDs) have been fabricated with maximum avalanche gains exceeding 10,000 and excellent signal to noise ratios. A model of device performance has been developed in which previously developed general expressions are numerically integrated using actual fabrication parameters. The gain, statistical fluctuations in the gain, electronic noise, and total peak broadening have been computed using this model. The results are in good agreement with measurements. The parameter keff was found to be 7.2 x 10-4, allowing a high signal to noise ratio at gains of several thousand

  2. Hybrid expert system for decision supporting in the medical area: complexity and cognitive computing.

    Science.gov (United States)

    Brasil, L M; de Azevedo, F M; Barreto, J M

    2001-09-01

    This paper proposes a hybrid expert system (HES) to minimise some complexity problems pervasive to the artificial intelligence such as: the knowledge elicitation process, known as the bottleneck of expert systems; the model choice for knowledge representation to code human reasoning; the number of neurons in the hidden layer and the topology used in the connectionist approach; the difficulty to obtain the explanation on how the network arrived to a conclusion. Two algorithms applied to developing of HES are also suggested. One of them is used to train the fuzzy neural network and the other to obtain explanations on how the fuzzy neural network attained a conclusion. To overcome these difficulties the cognitive computing was integrated to the developed system. A case study is presented (e.g. epileptic crisis) with the problem definition and simulations. Results are also discussed. PMID:11518662

  3. Low-energy X-ray and gamma spectrometry using silicon photodiodes; Espectrometria de raios X e gama de baixa energia utilizando fotodiodos de silicio

    Energy Technology Data Exchange (ETDEWEB)

    Silva, Iran Jose Oliveira da

    2000-08-01

    The use of semiconductor detectors for radiation detection has increased in recent years due to advantages they present in comparison to other types of detectors. As the working principle of commercially available photodiodes is similar to the semiconductor detector, this study was carried out to evaluate the use of Si photodiodes for low energy x-ray and gamma spectrometry. The photodiodes investigated were SFH-205, SFH-206, BPW-34 and XRA-50 which have the following characteristics: active area of 0,07 cm{sup 2} and 0,25 cm{sup 2}, thickness of the depletion ranging from 100 to 200 {mu}m and junction capacitance of 72 pF. The photodiode was polarized with a reverse bias and connected to a charge sensitive pre-amplifier, followed by a amplifier and multichannel pulse analyzer. Standard radiation source used in this experiment were {sup 241} Am, {sup 109} Cd, {sup 57} Co and {sup 133} Ba. The X-ray fluorescence of lead and silver were also measured through K- and L-lines. All the measurements were made with the photodiodes at room temperature.The results show that the responses of the photodiodes very linear by the x-ray energy and that the energy resolution in FWHM varied between 1.9 keV and 4.4 keV for peaks corresponding to 11.9 keV to 59 keV. The BPW-34 showed the best energy resolution and the lower dark current. The full-energy peak efficiency was also determined and it was observed that the peak efficiency decreases rapidly above 50 keV. The resolution and efficiency are similar to the values obtained with other semiconductor detectors, evidencing that the photodiodes used in that study can be used as a good performance detector for low energy X-ray and gamma spectrometry. (author)

  4. PbS colloidal quantum dot photodiodes for low-cost SWIR sensing

    Science.gov (United States)

    Klem, Ethan J. D.; Gregory, Chris; Temple, Dorota; Lewis, Jay

    2015-06-01

    RTI has developed a photodiode technology based on solution-processed PbS colloidal quantum dots (CQD). These devices are capable of providing low-cost, high performance detection across the Vis-SWIR spectral range. At the core of this technology is a heterojunction diode structure fabricated using techniques well suited to wafer-scale fabrication, such as spin coating and thermal evaporation. This enables RTI's CQD diodes to be processed at room temperature directly on top of read-out integrated circuits (ROIC), without the need for the hybridization step required by traditional SWIR detectors. Additionally, the CQD diodes can be fabricated on ROICs designed for other detector material systems, effectively allowing rapid prototype demonstrations of CQD focal plane arrays at low cost and on a wide range of pixel pitches and array sizes.

  5. Independently accessed back-to-back HgCdTe photodiodes: A new dual-band infrared detector

    Science.gov (United States)

    Reine, M. B.; Norton, P. W.; Starr, R.; Weiler, M. H.; Kestigian, M.; Musicant, B. L.; Mitra, P.; Schimert, T.; Case, F. C.; Bhat, Lb.; Ehsani, H.; Rao, V.

    1995-05-01

    We report the first data for a new two-color HgCdTe infrared detector for use in large dual-band infrared focal plane arrays (IRFPAs). Referred to as the independently accessed back-to-back photodiode structure, this novel dual-band HgCdTe detector provides independent electrical access to each of two spatially collocated back-to-back HgCdTe photodiodes so that true simultaneous and independent detection of medium wavelength (MW, 3-5 μm) and long wavelength (LW, 8-12 μm) infrared radiation can be accomplished. This new dual-band detector is directly compatible with standard backside-illuminated bump-interconnected hybrid HgCdTe IRFPA technology. It is capable of high fill factor, and allows high quantum efficiency and BLIP sensitivity to be realized in both the MW and LW photodiodes. We report data that demonstrate experimentally the key features of this new dual-band detector. These arrays have a unit cell size of 100 x 100 μm2, and were fabricated from a four-layer p-n-N-P HgCdTe film grown in situ by metalorganic chemical vapor deposition on a CdZnTe substrate. At 80K, the MW detector cutoff wavelength is 4.5 μm and the LW detector cutoff wavelength is 8.0 μm. Spectral crosstalk is less than 3%. Data confirm that the MW and LW photodiodes are electrically and radiometrically independent.

  6. Intuitionistic hybrid logic

    DEFF Research Database (Denmark)

    Braüner, Torben

    2011-01-01

    Intuitionistic hybrid logic is hybrid modal logic over an intuitionistic logic basis instead of a classical logical basis. In this short paper we introduce intuitionistic hybrid logic and we give a survey of work in the area.......Intuitionistic hybrid logic is hybrid modal logic over an intuitionistic logic basis instead of a classical logical basis. In this short paper we introduce intuitionistic hybrid logic and we give a survey of work in the area....

  7. Hybridization of Southern Hemisphere blue whale subspecies and a sympatric area off Antarctica: impacts of whaling or climate change?

    Science.gov (United States)

    Attard, Catherine R M; Beheregaray, Luciano B; Jenner, K Curt S; Gill, Peter C; Jenner, Micheline-Nicole; Morrice, Margaret G; Robertson, Kelly M; Möller, Luciana M

    2012-12-01

    Understanding the degree of genetic exchange between subspecies and populations is vital for the appropriate management of endangered species. Blue whales (Balaenoptera musculus) have two recognized Southern Hemisphere subspecies that show differences in geographic distribution, morphology, vocalizations and genetics. During the austral summer feeding season, the Antarctic blue whale (B. m. intermedia) is found in polar waters and the pygmy blue whale (B. m. brevicauda) in temperate waters. Here, we genetically analyzed samples collected during the feeding season to report on several cases of hybridization between the two recognized blue whale Southern Hemisphere subspecies in a previously unconfirmed sympatric area off Antarctica. This means the pygmy blue whales using waters off Antarctica may migrate and then breed during the austral winter with the Antarctic subspecies. Alternatively, the subspecies may interbreed off Antarctica outside the expected austral winter breeding season. The genetically estimated recent migration rates from the pygmy to Antarctic subspecies were greater than estimates of evolutionary migration rates and previous estimates based on morphology of whaling catches. This discrepancy may be due to differences in the methods or an increase in the proportion of pygmy blue whales off Antarctica within the last four decades. Potential causes for the latter are whaling, anthropogenic climate change or a combination of these and may have led to hybridization between the subspecies. Our findings challenge the current knowledge about the breeding behaviour of the world's largest animal and provide key information that can be incorporated into management and conservation practices for this endangered species. PMID:23137299

  8. Study and design of a hybrid wind-diesel-compressed air energy storage system for remote areas

    International Nuclear Information System (INIS)

    Remote areas around the world predominantly rely on diesel-powered generators for their electricity supply, a relatively expensive and inefficient technology that is responsible for the emission of 1.2 million tons of greenhouse gas (GHG) annually, only in Canada . Wind-diesel hybrid systems (WDS) with various penetration rates have been experimented to reduce diesel consumption of the generators. After having experimented wind-diesel hybrid systems (WDS) that used various penetration rates, we turned our focus to that the re-engineering of existing diesel power plants can be achieved most efficiently, in terms of cost and diesel consumption, through the introduction of high penetration wind systems combined with compressed air energy storage (CAES). This article compares the available technical alternatives to supercharge the diesel that was used in this high penetration wind-diesel system with compressed air storage (WDCAS), in order to identify the one that optimizes its cost and performances. The technical characteristics and performances of the best candidate technology are subsequently assessed at different working regimes in order to evaluate the varying effects on the system. Finally, a specific WDCAS system with diesel engine downsizing is explored. This proposed design, that requires the repowering of existing facilities, leads to heightened diesel power output, increased engine lifetime and efficiency and to the reduction of fuel consumption and GHG emissions, in addition to savings on maintenance and replacement cost.

  9. Performance of hybrid photon detector prototypes with 80% active area for the RICH counters of LHCb

    CERN Document Server

    Albrecht, E; Barber, G J; Bibby, J H; Campbell, M; Duane, A; Gys, Thierry; Montenegro, J; Piedigrossi, D; Schomaker, R; Snoeys, W; Wotton, S A; Wyllie, Ken H

    2000-01-01

    We report on the ongoing work towards a hybrid photon detector with integrated Si pixel readout for the ring imaging Cherenkov detectors of the LHCb experiment at the Large Hadron Collider at CERN. The photon detector is based on an electrostatically focussed image intensifier tube geometry where the image is de-magnified by a factor of ~5. The anode consists of a silicon pixel array, bump-bonded to a binary readout chip with matching pixel electronics. The performance of full-scale prototypes equipped with 61-pixel anodes and external analogue readout is presented. The average signal-to-noise ratio is ~11 with a peaking time of 1.2 mu s. The tube active-to-total surface ratio is 81.7%, which meets the LHCb requirements. The spatial precision is measured to be better than 90 mu m. A cluster of three such tubes has been installed in the LHCb RICH 1 prototype where Cherenkov gas rings have been successfully detected. Progress towards the encapsulation of new pixel electronics into a tube is also reported. In pa...

  10. Properties of the avalanche photodiodes for the CMS electromagnetic calorimeter

    International Nuclear Information System (INIS)

    The electromagnetic calorimeter of the CMS experiment at CERN's Large Hadron Collider will use 122 400 Avalanche Photodiodes from Hamamatsu Photonics. The design of this APD type is the result of a long R and D program performed by Hamamatsu Photonics and the CMS collaboration. The APD parameters including the behavior under irradiation are discussed in view of our application

  11. Properties of the avalanche photodiodes for the CMS electromagnetic calorimeter

    CERN Document Server

    Deiters, K; Musienko, Yu V; Nicol, S; Patel, P; Renker, D; Reucroft, S; Rusack, R W; Sakhelashvili, T M; Swain, J D; Vikas, P

    2000-01-01

    The electromagnetic calorimeter of the CMS experiment at CERN's Large Hadron Collider will use 122400 avalanche photodiodes from Hamamatsu Photonics. The design of this APD type is the result of a long R&D program performed by Hamamatsu photonics and the CMS Collaboration. The APD parameters including the behavior under irradiation are discussed in view of our application. (4 refs).

  12. Automated Characterization of Single-Photon Avalanche Photodiode

    Directory of Open Access Journals (Sweden)

    Aina Mardhiyah M. Ghazali

    2012-01-01

    Full Text Available We report an automated characterization of a single-photon detector based on commercial silicon avalanche photodiode (PerkinElmer C30902SH. The photodiode is characterized by I-V curves at different illumination levels (darkness, 10 pW and 10 µW, dark count rate and photon detection efficiency at different bias voltages. The automated characterization routine is implemented in C++ running on a Linux computer. ABSTRAK: Kami melaporkan pencirian pengesan foton tunggal secara automatik berdasarkan kepada diod foto runtuhan silikon (silicon avalanche photodiode (PerkinElmer C30902SH komersial. Pencirian  diod foto adalah berdasarkan kepada plot arus-voltan (I-V pada tahap pencahayaan yang berbeza (kelam - tanpa cahaya, 10pW, dan 10µW, kadar bacaan latar belakang, kecekapan pengesanan foton pada voltan picuan yang berbeza. Pengaturcaraan C++ digunakan di dalam rutin pencirian automatik melalui komputer dengan sistem pengendalian LINUX.KEYWORDS: avalanche photodiode (APD; single photon detector; photon counting; experiment automation

  13. Optical fibers and avalanche photodiodes for scintillator counters

    International Nuclear Information System (INIS)

    Fine hodoscopes can be made of new scintillating optical fibers and one half inch end-on PMT's. An avalanche photodiode with small size and immunity to magnetic fields remains as a tempting new device to be proven as a photodetector for the fibers

  14. Monolithic optical gates based on integration of evanescently-coupled uni-traveling-carrier photodiodes and electroabsorption modulators

    International Nuclear Information System (INIS)

    We report on chip-scale optical gates based on the integration of evanescent waveguide unitraveling-carrier photodiodes (EC-UTC-PDs) and intra-step quantum well electroabsorption modulators (IQW-EAMs) on n-InP substrates. These devices exhibit simultaneously 2.1 GHz and −6.2 dB RF-gain at 21 GHz with a 450 Ω thin-film resistor and a bypass capacitor integrated on a chip. (classical areas of phenomenology)

  15. Area-efficient nonvolatile carry chain based on pass-transistor/atom-switch hybrid logic

    Science.gov (United States)

    Bai, Xu; Tsuji, Yukihide; Sakamoto, Toshitsugu; Morioka, Ayuka; Miyamura, Makoto; Tada, Munehiro; Banno, Naoki; Okamoto, Koichiro; Iguchi, Noriyuki; Hada, Hiromitsu

    2016-04-01

    For the first time, an area-efficient nonvolatile carry chain combining look-up tables and a pass-transistor-logic-based adder is newly developed using complementary atom switches without additional CMOS circuits. A proposed tristate switch composed of three pairs of complementary atom switches selects one of “0”, “1”, and the “carry_in” signal as the input of a common multiplexer for both a look-up table and an adder. The developed nonvolatile carry chain achieves the reductions of 20% area, 17% delay, and 17% power consumption, respectively, in comparison with a conventional nonvolatile carry chain using dedicated CMOS gates.

  16. Hybrid environmental robot: a tool for monitoring gas on flooded area; Robo ambiental hibrido: utilizacao como ferramenta para monitoramento de gases em areas alagadas

    Energy Technology Data Exchange (ETDEWEB)

    Goes, Emerson de; Cerqueira, Romulo Curty; Reis, Ney Robinson S. [PETROBRAS, Rio de Janeiro, RJ (Brazil)

    2008-07-01

    The impoundment of rivers for power generation leads to flooding of vast areas of land vegetation. Most submerged plants, die and enter into decomposition, releasing CO2 (carbon dioxide), CH4 (methane gas) into the air for many years. Scientists from around the world seek to clarify the processes to which these gases are submitted and their contributions to the process of global warming. Estimates suggest that the re-use of methane that passes through the turbines of these power plants could increase their energy potential by 75% and reduce their emissions of these gases by 65%, reducing their impact on global warming and resulting in carbon credits. To check the feasibility of using new processes and technologies to generate energy that recycles this biogas, operations for monitoring these biogases become routine tasks. The frequency is such that the exposure of humans to the risks of gas combustion, inherent to scenarios where these operations take place, becomes unacceptable. This motivates the use of robots in this activity. This paper presents the multi-mission platform Hybrid Environmental Robot, named 'Chico Mendes', as a tool for tracking gas emission and specially designed for flooded forest areas.

  17. Linear array of photodiodes to track a human speaker for video recording

    International Nuclear Information System (INIS)

    Communication and collaboration using stored digital media has garnered more interest by many areas of business, government and education in recent years. This is due primarily to improvements in the quality of cameras and speed of computers. An advantage of digital media is that it can serve as an effective alternative when physical interaction is not possible. Video recordings that allow for viewers to discern a presenter's facial features, lips and hand motions are more effective than videos that do not. To attain this, one must maintain a video capture in which the speaker occupies a significant portion of the captured pixels. However, camera operators are costly, and often do an imperfect job of tracking presenters in unrehearsed situations. This creates motivation for a robust, automated system that directs a video camera to follow a presenter as he or she walks anywhere in the front of a lecture hall or large conference room. Such a system is presented. The system consists of a commercial, off-the-shelf pan/tilt/zoom (PTZ) color video camera, a necklace of infrared LEDs and a linear photodiode array detector. Electronic output from the photodiode array is processed to generate the location of the LED necklace, which is worn by a human speaker. The computer controls the video camera movements to record video of the speaker. The speaker's vertical position and depth are assumed to remain relatively constant– the video camera is sent only panning (horizontal) movement commands. The LED necklace is flashed at 70Hz at a 50% duty cycle to provide noise-filtering capability. The benefit to using a photodiode array versus a standard video camera is its higher frame rate (4kHz vs. 60Hz). The higher frame rate allows for the filtering of infrared noise such as sunlight and indoor lighting–a capability absent from other tracking technologies. The system has been tested in a large lecture hall and is shown to be effective.

  18. Linear array of photodiodes to track a human speaker for video recording

    Science.gov (United States)

    DeTone, D.; Neal, H.; Lougheed, R.

    2012-12-01

    Communication and collaboration using stored digital media has garnered more interest by many areas of business, government and education in recent years. This is due primarily to improvements in the quality of cameras and speed of computers. An advantage of digital media is that it can serve as an effective alternative when physical interaction is not possible. Video recordings that allow for viewers to discern a presenter's facial features, lips and hand motions are more effective than videos that do not. To attain this, one must maintain a video capture in which the speaker occupies a significant portion of the captured pixels. However, camera operators are costly, and often do an imperfect job of tracking presenters in unrehearsed situations. This creates motivation for a robust, automated system that directs a video camera to follow a presenter as he or she walks anywhere in the front of a lecture hall or large conference room. Such a system is presented. The system consists of a commercial, off-the-shelf pan/tilt/zoom (PTZ) color video camera, a necklace of infrared LEDs and a linear photodiode array detector. Electronic output from the photodiode array is processed to generate the location of the LED necklace, which is worn by a human speaker. The computer controls the video camera movements to record video of the speaker. The speaker's vertical position and depth are assumed to remain relatively constant- the video camera is sent only panning (horizontal) movement commands. The LED necklace is flashed at 70Hz at a 50% duty cycle to provide noise-filtering capability. The benefit to using a photodiode array versus a standard video camera is its higher frame rate (4kHz vs. 60Hz). The higher frame rate allows for the filtering of infrared noise such as sunlight and indoor lighting-a capability absent from other tracking technologies. The system has been tested in a large lecture hall and is shown to be effective.

  19. Novel radiation detectors based on multi pixels avalanche photodiodes: their status and perspectives of application

    International Nuclear Information System (INIS)

    Full text: Different versions of silicon avalanche photodiodes (APD), as well as new multi pixel avalanche photodiodes (MAPD) have been discussed widely during the last decade as an advanced photon counter for various applications. The sensitive area of a MAPD contains a matrix of independent micro-pixels with individual passive elements, which are created on a common silicon wafer. The individual passive elements provide local suppression of the avalanche process and discharge each micro-pixel to a common conducting or metal electrode. The advanced properties of a MAPD are connected with a local negative feedback (LNF) effect, which result in a local self-suppression of the avalanche gain due to individual passive elements with necessary resistivity and capacitance and, consequently, significantly reduces the influence of crystal non-uniformities on the characteristics of the avalanche multiplication process. The LNF effect is achieved by forming a specific matrix in the multilayer silicon structure which ensures a localisation of the avalanche processes and limits them in frames of independent micro-regions of 3-50 m in size, depending of the MAPD design. Thus, the micro-pixel structure in a MAPD results in a unique combination of high signal amplification and uniform avalanche multiplication over the entire sensitive area of the device. Each pixel has a sandwich like structure like a metal-resistive layer-semiconductor (MRS). This device is made in a very simple technology and it may demonstrate very good parameters in the red and near infrared regions of spectrum.

  20. A hybrid 802.16/802.11 network architecture for a United States coastal area network

    Science.gov (United States)

    Burbank, Jack L.; Kasch, William T.; Andrusenko, Julia; Haberman, Brian K.; Nichols, Robert; Zheng, Harold

    2007-04-01

    This paper presents a concept for a United States Coastal Area Network (U-SCAN) that is comprised of IEEE 802.11, 802.16, and satellite communications technologies. The Office of Naval Research (ONR) on behalf of the National Oceanographic Partnership Program (NOPP) has tasked The Johns Hopkins University Applied Physics Laboratory (JHU/APL) to perform an architectural study into the establishment of a United States Coastal Area Network (U-SCAN). The goal of this study is to define a wireless network architecture that can be deployed to enable contiguous coastal area network coverage for scientific, commercial, and homeland security (e.g. Coast Guard) applications within the United States Exclusive Economic Zone (EEZ), in a manner that is flexible, manageable, and affordable. The JHU/APL study will ultimately provide recommendations to NOPP regarding potential network architectures and technologies that could provide the desired capability, with a particular focus on commercial (both existing and emerging) technologies. This paper presents the envisioned U-SCAN architecture, and presents the envisioned technical capabilities and shortcomings of the component candidate technologies.

  1. Pilot solar hybrid power station in rural area, Rompin, Pahang, Malaysia

    International Nuclear Information System (INIS)

    Malaysia has considerable number of widely deployed small rural area. These hamlets are very much associated with Orang Asli residents. They get their source of energy by candle or kerosene light while some richer community can afford a generator set. The usual or normal system using solar as a source for electricity at rural area is standalone system for each house. As for this project, a pilot centralized solar power station will be the source of electricity to light up the fifteen houses at Kampung Denai, Rompin, Pahang, Malaysia. This system will be the first ever built for the orang asli settlement at Pahang. The objectives of this project are to design and install the solar power station at remote location and to develop standard design of stand-alone solar power station suitable for Malaysia. Orang Asli residents at Kampung Denai was chosen because there is a school for the Orang Asli children. Moreover, the remote communities are living in stratification, which makes electrical wiring easier. Furthermore, the remote area is far from the last transmission line and cumbersome to bring diesel through the rough and unpredictable land road. The main domestic energy is for residential purposes (e.g. small lighting unit, radio, television, video, etc). The generator capacity is 18.6 kW. The solar sizing was done both for the home and school appliances at Kampung Denai. The maximum demand measured was 4195.35 kW. The pilot centralized solar power station consists of 10 kW photovoltaic panels, 10 kW inverter, 150 kWh battery and other balance of system. A generator set with capacity of 12.5 kVA is installed for back up and during monsoon season. This paper will present status of the system, operational and maintenance issues, load profile of the solar power station and economics and system design of the whole system

  2. Energy-efficient hybrid system for Wireless Body Area Network Applications

    OpenAIRE

    Ghamari, Mohammad; Janko, Balazs; Sherratt, Simon; Harwin, William

    2014-01-01

    Wireless Body Area Networks (WBANs) consist of a number of miniaturized wearable or implanted sensor nodes that are employed to monitor vital parameters of a patient over long duration of time. These sensors capture physiological data and wirelessly transfer the collected data to a local base station in order to be further processed. Almost all of these body sensors are expected to have low data-rate and to run on a battery. Since recharging or replacing the battery is not a simple task speci...

  3. Application of avalanche photodiodes for the measurement of actinides by alpha liquid scintillation counting

    International Nuclear Information System (INIS)

    Alpha emitters analysis using liquid scintillation spectroscopy is often used when sensitivity and fast samples preparation are the important points. A more extensive use of this technique is until now limited by its poor resolution compared to alpha particle spectroscopy with semiconductor detectors. To improve the resolution and thus promote this method for the measurement of actinides in environment, we have tested silicon avalanche photodiodes (APD) as new detectors for scintillation photons. The set-up consists of a large area avalanche photodiode (16 mm diameter) coupled to a thin vial containing alpha-emitters within a liquid scintillation cocktail. After optimization of several parameters like bias voltage, temperature, counting geometry and composition of the scintillating cocktail, energy resolutions have been found to be better than those obtained with standard photomultiplier tubes (PMT): 5% (200 keV FWHM) for 232Th and 4.2% (240 keV FWHM) for 236Pu. Our results show that the improvement is due to less fluctuations associated with light collection since the spatial response of APDs is more uniform than that of PMTs. The expected gain on quantum efficiency (80% for APDs instead of 25% for PMTs) is nullified by a corresponding increase on electronic noise and excess noise factor. Significant better results are foreseen by using green scintillators (450 - 550 nm wavelengths region) with larger Stokes-shift and blue-enhanced APDs which reach their maximum quantum efficiency in this region. (author)

  4. Design, fabrication and physical analysis of TiN/AlN deep UV photodiodes

    International Nuclear Information System (INIS)

    Deep-ultraviolet solar-blind photodiodes based on high-quality AlN films grown on sapphire substrates with a metal-semiconductor-metal configuration were simulated and fabricated. The Schottky contact is based on TiN metallization. The material is characterized by the micro-Raman spectroscopy and x-ray diffraction technique. The detector presents an extremely low dark current of 100 fA at -100 V dc bias for large device area as high as 3.1 mm2. It also exhibits a rejection ratio between 180 and 300 nm of three orders of magnitude with a very sharp cut-off wavelength at 203 nm (∼6.1 eV). The simulation to optimize the photodiode topology is based on a 2D energy-balance model using the COMSOL (registered) software. Simulation performed for different spacing for a given bias between electrodes show that a compromise must be found between the dark current and the responsivity for the optimization of the device performance. The measurement results are in good agreement with the model predictions.

  5. Design, fabrication and physical analysis of TiN/AlN deep UV photodiodes

    Energy Technology Data Exchange (ETDEWEB)

    Barkad, H A; Soltani, A; Mattalah, M; Gerbedoen, J-C; Rousseau, M; De Jaeger, J-C [IEMN, UMR-CNRS 8520, Avenue Poincare, Universite de Lille1, 59652 Villeneuve d' Ascq (France); BenMoussa, A [Royal Observatory of Belgium (ROB, STCE), Circular 3, B-1180 Brussels (Belgium); Mortet, V; Haenen, K [Institute for Materials Research, Hasselt University, Wetenschapark 1, B-3590 Diepenbeek, Belgium IMEC vzw, Division IMOMEC, Wetenschapark 1, B-3590 Diepenbeek (Belgium); Benbakhti, B [DEEE, Rankine Building, Oakfield Avenue. University of Glasgow, G12 8LT Glasgow, Scotland (United Kingdom); Moreau, M [LASIR, USTL, C5, BP 69, 59652 Villeneuve d' Ascq Cedex (France); Dupuis, R [CCS-SECE, Georgia Institute of Technology, 777 Atlantic Drive NW, Atlanta, GA 30332-0250 (United States); Ougazzaden, A, E-mail: ali.soltani@iemn.univ-lille1.f [Georgia Tech-Lorraine (GTL), UMI 2958 GT-CNRS, 2-3 rue Marconi, 57070 Metz (France)

    2010-11-24

    Deep-ultraviolet solar-blind photodiodes based on high-quality AlN films grown on sapphire substrates with a metal-semiconductor-metal configuration were simulated and fabricated. The Schottky contact is based on TiN metallization. The material is characterized by the micro-Raman spectroscopy and x-ray diffraction technique. The detector presents an extremely low dark current of 100 fA at -100 V dc bias for large device area as high as 3.1 mm{sup 2}. It also exhibits a rejection ratio between 180 and 300 nm of three orders of magnitude with a very sharp cut-off wavelength at 203 nm ({approx}6.1 eV). The simulation to optimize the photodiode topology is based on a 2D energy-balance model using the COMSOL (registered) software. Simulation performed for different spacing for a given bias between electrodes show that a compromise must be found between the dark current and the responsivity for the optimization of the device performance. The measurement results are in good agreement with the model predictions.

  6. CsI(Tl) with photodiodes for identifying subsurface radionuclide contamination

    International Nuclear Information System (INIS)

    At the US Department of Energy's Hanford Site near Richland, Washington, underground radioactive contamination exists as the result of leaks, spills, and intentional disposal of waste products from plutonium-production operations. Characterizing these contaminants in preparation for environmental remediation is a major effort now in progress. In this paper, a cylindrical (15 x 61 mm) CsI(Tl) scintillation detector with two side-mounted photodiodes has been developed to collect spectral gamma-ray data in subsurface contaminated formations at the U.S. Department of Energy's Hanford Site. It operates inside small-diameter, thick-wall steel pipes pushed into the ground to depths up to 20 m by a cone penetrometer. The detector provides a rugged, efficient, magnetic-field-insensitive means for identifying gamma-ray-emitting contaminants (mainly 137Cs and 60Co). Mounting two 3 x 30-mm photodiodes end-to-end on a flat area along the detector's side provides efficient light collection over the length of the detector

  7. The hybrid photonic planar integrated receiver with a polymer optical waveguide

    Science.gov (United States)

    Busek, Karel; Jerábek, Vitezslav; Armas Arciniega, Julio; Prajzler, Václav

    2008-11-01

    This article describes design of the photonic receiver composed of the system polymer planar waveguides, InGaAs p-i-n photodiode and integrated HBT amplifier on a low loss composite substrate. The photonic receiver was the main part of the hybrid integrated microwave optoelectronic transceiver TRx (transciever TRx) for the optical networks PON (passive optical networks) with FTTH (fiber-to-the-home) topology. In this article are presented the research results of threedimensional field between output facet of a optical waveguide and p-i-n photodiode. In terms of our research, there was optimized the optical coupling among the facet waveguide and pi-n photodiode and the electrical coupling among p-i-n photodiode and input of HBT amplifier. The hybrid planar lightwave circuit (PLC) of the transceiver TRx will be composed from a two parts - polymer optical waveguide including VHGT filter section and a optoelectronic microwave section.

  8. Radiation hard avalanche photodiodes for the CMS detector

    International Nuclear Information System (INIS)

    The avalanche photodiodes, developed by Hamamatsu Photonics in collaboration with CMS, which are to be used to read out the lead tungstate crystals in the barrel part of the CMS electromagnetic calorimeter, are described. The procedures taken to ensure their long-term reliability in the radiation environment expected in CMS are outlined, as well as the studies made to verify the very high reliability required

  9. Simulation of neutron radiation effects in silicon avalanche photodiodes

    OpenAIRE

    Osborne, Mark David

    2000-01-01

    This thesis was submitted for the degree of Doctor of Philosophy and awarded by Brunel University. A new one-dimensional device simulation package developed for the simulation of neutron radiatiol! effects in silicon avalanche photodiodes is described. The software uses a finite difference technique to solve the time-independent semiconductor equations across a user specified structure. Impact ionisation and illumination are included, allowing accurate simulation with minimal assumptions a...

  10. Numerical simulation of neutron radiation effects in avalanche photodiodes

    OpenAIRE

    Osborne, M.; Hobson, PR; Watts, SJ

    2000-01-01

    A new one-dimensional (1-D) device model developed for the simulation of neutron radiation effects in silicon avalanche photodiodes is described. The model uses a finite difference technique to solve the time-independent semiconductor equations across a user specified structure. The model includes impact ionization and illumination allowing accurate simulation with minimal assumptions. The effect of neutron radiation damage is incorporated via the introduction of deep acceptor levels subject ...

  11. Radiation Hard Avalanche Photo-Diodes for the CMS detector

    CERN Document Server

    Antunovic, Z; Deiters, K; Godinovic, N; Ingram, Q; Kuznetsov, A; Musienko, Y; Puljak, I; Reucroft, S; Rusack, R W; Sakhelashvili, T M; Singovsky, A V; Soric, I; Swain, J D

    2003-01-01

    The avalanche photo-diodes, developed by Hamamatsu Photonics in collaboration with CMS, which are to be used to read out the lead tungstate crystals in the barrel part of the CMS electromagnetic calorimeter, are described. The procedures taken to ensure their long term reliability in the radiation environment expected in CMS are outlined, as well as the studies made to verify the very high reliability required.

  12. Radiation hard avalanche photodiodes for the CMS detector

    CERN Document Server

    Antunovic, Z; Deiters, K; Godinovic, N; Ingram, Q; Kuznetsov, A; Musienko, Y; Puljak, I; Renker, D; Reucroft, S; Rusack, R; Sakhelashvili, T M; Singovsky, A V; Soric, I; Swain, J

    2005-01-01

    The avalanche photodiodes, developed by Hamamatsu Photonics in collaboration with CMS, which are to be used to read out the lead tungstate crystals in the barrel part of the CMS electromagnetic calorimeter, are described. The procedures taken to ensure their long-term reliability in the radiation environment expected in CMS are outlined, as well as the studies made to verify the very high reliability required.

  13. Time performances of a scintillator-photodiode system

    International Nuclear Information System (INIS)

    Time characteristics of the system with surface-barrier photodiode are investigated by calculations on the example of photodiodes made of semiconductor with electron conductivity. The forms of charge pulses of scintillator-surface-barrier photodiode system are obtained at different values of the relation of scintillator luminescence time constant to the time of electron flight and holes. It is shown, that the charge pulse form of the system with surface-barrier photodiode is determined by silicon specific resistance and the constant of the scintillator luminescence time. The pulse form also depends on the diode side, where scintillator optical coupling is carried out: either from the side of golden contact or back contact side. The time of charge pulse increasing is determined by luminescence time for great constants of the scintillator luminescence time. Besides, an essential difference is observed in the time of pulse increasing in the case of generating nonequilibrium carriers by photons of scintillations and in the case of uniform generation by the depth of sensitive region. It is noted, that during generating the current carriers from the side of back contact a time delay from generation moment up to the moment of pulse occurrence, is observed. It is explained by the fact, that nonequilibrium carriers are generated in this case in the region of weak field intensity, and therefore the rate of their movement is inessential. The value of the potential slightly changes with the coordinate change in this region, i.e. the charge on a collecting electrode is not practically guided up to a certain moment of time during the movement of nonequilibrium carriers

  14. A New Positioning Algorithm for Position-Sensitive Avalanche Photodiodes

    OpenAIRE

    Zhang, Jin; Olcott, Peter D.; Levin, Craig S

    2007-01-01

    We are using a novel position sensitive avalanche photodiode (PSAPD) for the construction of a high resolution positron emission tomography (PET) camera. Up to now most researchers working with PSAPDs have been using an Anger-like positioning algorithm involving the four corner readout signals of the PSAPD. This algorithm yields a significant non-linear spatial “pin-cushion” distortion in raw crystal positioning histograms. In this paper, we report an improved positioning algorithm, which com...

  15. Radiation effects in ultraviolet sensitive SiC photodiodes

    International Nuclear Information System (INIS)

    We tested SiC photodiodes with Co-60 gamma rays up to a total dose of 22 Mrad(SiC) and 32 MeV protons up to a fluence of 9 x 1012 cm-2. They showed a decrease in sensitivity of about 50% at a dose of 1 Mrad. The same decrease or somewhat less was observed during proton irradiations when the fluence is converted to an applied dose. (authors)

  16. Investigation of avalanche photodiodes radiation hardness for baryonic matter studies

    International Nuclear Information System (INIS)

    Modern avalanche photodiodes (APDs) with high gain are good device candidates for light readout from detectors applied in relativistic heavy-ion collision experiments. The results of the investigations of the APDs properties from Zecotek, Ketek, and Hamamatsu manufacturers after irradiation using secondary neutrons from U120M cyclotron facility at NPI of ASCR in Rez are presented. The results of the investigations can be used for the design of the detectors for the experiments at NICA and FAIR

  17. Avalanche photodiodes as large dynamic range detectors for synchrotron radiation

    International Nuclear Information System (INIS)

    We investigated silicon-based avalanche photodiodes (APDs) as X-ray detectors in terms of their linearity, maximum counting rates, and dynamic range with 8.4 keV synchrotron radiation. Measurements resulted in counting rates that extend from the APD's noise level of 10-2 Hz to saturation counting rates in excess of 108 Hz. In addition, by monitoring the APD's noise level and photon counting efficiency between synchrotron bursts, we demonstrate nine orders of magnitude dynamic range. ((orig.))

  18. Signal and Noise Properties of Position-Sensitive Avalanche Photodiodes

    OpenAIRE

    Yang, Yongfeng; Wu, Yibao; Farrell, Richard; Dokhale, Purushottam A.; Shah, Kanai S.; Cherry, Simon R.

    2011-01-01

    After many years of development, position-sensitive avalanche photodiodes (PSAPDs) are now being incorporated into a range of scintillation detector systems, including those used in high-resolution small-animal PET and PET/MR scanners. In this work, the signal, noise, signal-to-noise ratio (SNR), flood histogram and timing resolution were measured for lutetium oxyorthosilicate (LSO) scintillator arrays coupled to PSAPDs ranging in size from 10–20 mm, and the optimum bias voltage and working t...

  19. Photodiode read-out of CsI (Tl) scintillators

    International Nuclear Information System (INIS)

    The photodiode read-out of CsI(Tl) scintillator detectors up to a size of 100 cm3 was examined and developed further. In preparatory measurements with a combination of small crystals (≅ 3 cm3) and photodiodes with active surfaces of 1 cm2, γ spectra could be recorded, whose energy resolution (4.4% at 1.3 MeV) is not exceeded by any other scintillation detector. In order to improve the resolution when using CsI(Tl) crystals with a volume greater than 30 cm3, wavelength correctors were produced and tested. This target was not reached with the crystal dimensions used. Based on these measurements, one suspects that with even larger scintillators, one can expect an improvement of energy resolution compared to the direct read-out. It was also shown that it is possible, even at low energies (< 10 MeV) to identify γ radiation, neutrons and charged particles (p, d, t, α) by analysis of the time course of the photodiode signal. (orig./HP)

  20. Novel micropixel avalanche photodiodes (MAPD) with superhigh pixel density

    International Nuclear Information System (INIS)

    In many detectors based on scintillators the photomultiplier tubes (PMTs) are used as photodetectors. At present photodiodes are finding wide application. Solid state photodetectors allow operation in strong magnetic fields that are often present in applications, e.g., some calorimeters operating near magnets, combined PET and MRT, etc. The photon detection efficiency (PDE) of photodiodes may reach values a few times higher than that of PMTs. Also, they are rigid, compact and have relatively low operating voltage. In the last few years Micropixel Avalanche PhotoDiodes (MAPDs) have been developed and started to be used. The MAPD combines a lot of advantages of semiconductor photodetectors and has a high gain, which is close to that of the PMT. Yet, they have some disadvantages, and one of them is a limited dynamic range that corresponds to a total number of pixels. The novel deep microwell MAPD with high pixel density produced by Zecotek Company partially avoids this disadvantage. In this paper characteristics of these photodetectors are presented in comparison with the PMT characteristics. The results refer to measurements of the gain, PDE, cross-talks, photon counting and applications: beam test results of two different 'Shashlyk' EM calorimeters for COMPASS (CERN) and NICA-MPD (JINR) with the MAPD readout and a possibility of using the MAPD in PET

  1. Development and performance of a deep-diffused, planar construction avalanche photodiode

    CERN Document Server

    Gramsch, E; Ferrer, J

    2002-01-01

    A deep-diffused, large-area avalanche photodiode (APD) without bevel has been designed and built for use in low-light level applications. 2 and 3 mm diameter active area APDs have been built using standard planar technology for silicon devices, and a gain of 6 is obtained at 1300 V. The dark current is dependent on external voltage and it is only 50 to 80 nA below breakdown, which is much lower than standard bevel edge devices. The energy resolution of a sup 1 sup 3 sup 7 Cs source with an APD coupled to a CsI (Tl) scintillator was 14.5%. We have also performed simulations of the gain and breakdown voltage that correlate well with the results. (Author)

  2. ESTIMATION OF DROUGHT TOLERANCE OF LOCAL AND PIONEER TOP COMERCIAL CORN HYBRIDS TESTED IN DIFFERENT PEDO-CLIMATIC AREAS FROM SOUTH OF ROMANIA

    OpenAIRE

    Anghelus FIERBINTEANU; Marina UBERTI; Gabriela VALSAN; Valentin MANDACHE; Alexandru CHIPER; Gabriela-Mariana STOICA; Viorel DINCA

    2012-01-01

    The purpose of the study was the estimation of the behavior of top commercial corn hybrids tested in 5 different pedo-climatic areas from drought tolerance perspective. The study was carried out in 2009, 2010 and 2011 in 5locations: Valu lui Traian,Constanta county; Sarichioi, Tulcea county; Fundulea, Calaraşi county; Cazasu, Brăila county and Caracal Olt county. These locations were selected as being representative for corn crop. Eight corn hybrids (F475M, Olt, Paltin, F376 from Fundulea In...

  3. Characterization methods for silicon photodiode and silicon sub-surface properties

    OpenAIRE

    Haapalinna, Atte

    2004-01-01

    This thesis considers the characterization of silicon photodiode and the applications of silicon photodiodes in precision metrology, and some aspects of the silicon material characterizations. Such material characterizations are required in the process of semiconductor device manufacturing, one example of which is the silicon photodiode manufacturing. The motivation for the research on radiometry reported in this thesis has been the development of optical metrology at the Helsinki Univers...

  4. On possibilities of application of Miller formula for determination of parameters of Micropixel Avalanche Photodiodes

    CERN Document Server

    Sadygov, Z; Akhmedov, G; Akhmedov, F; Mukhtarov, R; Sadygov, A; Titov, A; Zhezher, V

    2014-01-01

    Miller formula modified to take into account voltage drop on serial resistor of an avalanche photodiode is considered. It is proven by experimental data that modified Miller formula can describe operation of both regular and micropixel avalanche photodiodes with good enough precision. It is shown that operation parameters of the devices can be determined using a linear extrapolation of the voltage-current curve for both regular avalanche photodiode and the one operating in Geiger mode.

  5. High power high linearity waveguide photodiodes : measurement, modeling, and characterization for analog optical links

    OpenAIRE

    Draa, Meredith Nicole

    2010-01-01

    As analog optical links continue to mature and fulfill communication needs, the requirements for output power and linearity continue to be a main focus. The receiver end of a link is a limiting factor for such applications, and therefore photodiode research continues to be at the forefront of these issues. In order to compete, photodiodes need to be able to maintain high bandwidth, high power and high linearity simultaneously. The study of photodiodes for analog links has focused on linearity...

  6. Solution-based PbS photodiodes, integrable on ROIC, for SWIR detector applications

    OpenAIRE

    Heves, Emre; Öztürk, Cem; Ozturk, Cem; Özgüz, Volkan Hüsnü; Ozguz, Volkan Husnu; Gürbüz, Yaşar; Gurbuz, Yasar

    2013-01-01

    Photodiodes, based on PbS colloidal quantum dots (CQD), are realized on both silicon substrates and the replicas of the read-out integrated circuits (ROICs) to demonstrate the first, fully integrated focal plane arrays. Careful optimization of PbS CQD film formation and ligand exchange process, together with optimized process steps, resulted in high performance, monolithically integrable photodiodes. High quantum efficiencies of 32% are achieved for photodiodes on Si substrates and high respo...

  7. 3D integration of Geiger-mode avalanche photodiodes aimed to very high fill-factor pixels for future linear colliders 

    CERN Document Server

    Vilella, E; Dieguez, A

    2013-01-01

    This paper presents an analysis of the maximum achievable fill-factor by a pixel detector of Geiger-mode avalanche photodiodes with the Chartered 130 nm/Tezzaron 3D process. The analysis shows that fillfactors between 66% and 96% can be obtained with different array architectures and a time-gated readout circuit of minimum area. The maximum fill-factor is achieved when the two-layer vertical stack is used to overlap the non-sensitive areas of one layer with the sensitive areas of the other one. Moreover, different sensor areas are used to further increase the fill-factor. A chip containing a pixel detector of the Geigermode avalanche photodiodes and aimed to future linear colliders has been designed with the Chartered 130 nm/Tezzaron 3D process to increase the fill-factor.

  8. Characterization of avalanche photodiodes (APDs) for the electromagnetic calorimeter in the ALICE experiment

    International Nuclear Information System (INIS)

    The Electromagnetic Calorimeter (EMCal) of the ALICE experiment at LHC will extensively make use of avalanche photodiodes (APDs) for the readout of scintillation light. The large sensitive area, high quantum efficiency and low dark current make this type of photosensors well-suited for the EMCal requirements. A testing activity is currently in progress in order to characterize the main properties of these APDs and find the best working conditions. Fundamental tasks are the individual test of all APDs after presetting their nominal gain via the bias control and the study of APD gain coefficients as a function of the applied bias voltage and temperature. An overview of the adopted procedure will be presented, together with a description of preliminary results obtained on a first sample of APDs during the testing activity.

  9. Hard disk drive based microsecond x-ray chopper for characterization of ionization chambers and photodiodes

    International Nuclear Information System (INIS)

    A fast X-ray chopper capable of producing ms long X-ray pulses with a typical rise time of few μs was realized. It is ideally suited to investigate the temporal response of X-ray detectors with response times of the order of μs to ms, in particular, any kind of ionization chambers and large area photo diodes. The drive mechanism consists of a brushless DC motor and driver electronics from a common hard disk drive, keeping the cost at an absolute minimum. Due to its simple construction and small dimensions, this chopper operates at home lab based X-ray tubes and synchrotron radiation sources as well. The dynamics of the most important detectors used in time resolved X-ray absorption spectroscopy, namely, ionization chambers and Passivated Implanted Planar Silicon photodiodes, were investigated in detail. The results emphasize the applicability of this X-ray chopper

  10. Identification of radiation induced dark current sources in pinned photodiode CMOS image sensors

    International Nuclear Information System (INIS)

    This paper presents an investigation of Total Ionizing Dose (TID) induced dark current sources in Pinned Photodiodes (PPD) CMOS Image Sensors based on pixel design variations. The influence of several layout parameters is studied. Only one parameter is changed at a time enabling the direct evaluation of its contribution to the observed device degradation. By this approach, the origin of radiation induced dark current in PPD is localized on the pixel layout. The PPD peripheral shallow trench isolation does not seem to play a role in the degradation. The PPD area and a transfer gate contribution independent of the pixel dimensions appear to be the main sources of the TID induced dark current increase. This study also demonstrates that applying a negative voltage on the transfer gate during integration strongly reduces the radiation induced dark current. (authors)

  11. Hard disk drive based microsecond x-ray chopper for characterization of ionization chambers and photodiodes

    Energy Technology Data Exchange (ETDEWEB)

    Müller, O., E-mail: o.mueller@uni-wuppertal.de; Lützenkirchen-Hecht, D.; Frahm, R. [Bergische Universität Wuppertal, Gaußstraße 20, Wuppertal 42119 (Germany)

    2015-03-15

    A fast X-ray chopper capable of producing ms long X-ray pulses with a typical rise time of few μs was realized. It is ideally suited to investigate the temporal response of X-ray detectors with response times of the order of μs to ms, in particular, any kind of ionization chambers and large area photo diodes. The drive mechanism consists of a brushless DC motor and driver electronics from a common hard disk drive, keeping the cost at an absolute minimum. Due to its simple construction and small dimensions, this chopper operates at home lab based X-ray tubes and synchrotron radiation sources as well. The dynamics of the most important detectors used in time resolved X-ray absorption spectroscopy, namely, ionization chambers and Passivated Implanted Planar Silicon photodiodes, were investigated in detail. The results emphasize the applicability of this X-ray chopper.

  12. Hard disk drive based microsecond x-ray chopper for characterization of ionization chambers and photodiodes

    Science.gov (United States)

    Müller, O.; Lützenkirchen-Hecht, D.; Frahm, R.

    2015-03-01

    A fast X-ray chopper capable of producing ms long X-ray pulses with a typical rise time of few μs was realized. It is ideally suited to investigate the temporal response of X-ray detectors with response times of the order of μs to ms, in particular, any kind of ionization chambers and large area photo diodes. The drive mechanism consists of a brushless DC motor and driver electronics from a common hard disk drive, keeping the cost at an absolute minimum. Due to its simple construction and small dimensions, this chopper operates at home lab based X-ray tubes and synchrotron radiation sources as well. The dynamics of the most important detectors used in time resolved X-ray absorption spectroscopy, namely, ionization chambers and Passivated Implanted Planar Silicon photodiodes, were investigated in detail. The results emphasize the applicability of this X-ray chopper.

  13. Design of scintillation counter read-out by silicon photodiode

    International Nuclear Information System (INIS)

    Comparing Silicon Photodiode (SPD) with Photomultiplier (PMT), the former, even though no inner multiplication, still has been used to replace the latter for its small size, allowing compact arrangement, high quantum efficiency and no need of high voltage to be supplied. Besides, it is able to work in strong magnetic field. How to design a scintillation counter read-out by SPD including selection of SPD and optimization of working condition of SPD and how to match SPD with scintillators and how to design or select a preamplifier to read-out SPD's signals according to various experiments are presented

  14. 400-ps time resolution with a passively quenched avalanche photodiode.

    Science.gov (United States)

    Grayson, T P; Wang, L J

    1993-06-01

    Avalanche photodiodes (APD's) operated in a single-photon-counting Geiger mode are becoming attractive alternatives to photomultiplier tubes for low-light-level detection and signal timing. By paying careful attention to the design and construction of a simple APD passive quenching circuit to reduce stray capacitances, we directly measured a time resolution of 410 ps FWHM for a commercial APD. A more detailed data analysis shows the actual time resolution to be ~ 390 ps FWHM. This is believed to be the most accurate time response for such a simple, inexpensive, and widely available device achieved to date. PMID:20829894

  15. Double screening tests of the CMS ECAL avalanche photodiodes

    International Nuclear Information System (INIS)

    Specially developed avalanche photodiodes (APDs) will be used to measure the light from the 61,200 lead tungstate crystals in the barrel part of the CMS electromagnetic calorimeter. To ensure the reliability over the lifetime of the detector, every APD is screened by irradiation and burn-in before it is accepted for CMS. As part of the establishment of the screening procedure and to determine its effectiveness, a large number of APDs were screened twice. The results of these tests suggest that the required reliability will be achieved

  16. Double Screening Tests of the CMS ECAL Avalanche Photodiodes

    CERN Document Server

    Deiters, Konrad; Renker, Dieter; Sakhelashvili, Tariel; Britvitch, Ilia; Kuznetsov, Andrey; Musienko, Yuri; Singovsky, Alexander

    2005-01-01

    Specially developed avalanche photo-diodes (APDs) will be used to measure the light from the 61,200 lead tungstate crystals in the barrel part of the CMS electromagnetic calorimeter. To ensure the reliability over the lifetime of the detector, every APD is screened by irradiation and burn-in before it is accepted for CMS. As part of the establishment of the screening procedure and to determine its effectiveness, a large number of APDs were screened twice. The results of these tests suggest that the required reliability will be achieved.

  17. Correcting for accidental correlations in saturated avalanche photodiodes

    CERN Document Server

    Grieve, James A; Tang, Zhongkan; Ling, Alexander

    2015-01-01

    In this paper we present a high-level numerical model for estimating rates of accidental correlations between a pair of passively quenched Geiger mode avalanche photodiodes operating in the saturated regime. By considering the recovery time of both the diodes and the detection circuit we introduce the concept of an "effective duty cycle" and show that it may be estimated by numeric simulation. The impact of effective duty cycle on the observed accidental rate is examined and we demonstrate that the updated model leads to an improved correction factor in actual experiments. This will improve the signal-to-noise ratio in applications depending on correlation measurements.

  18. Laser and photodiode environmental evaluation for the Versatile Link project

    CERN Document Server

    Troska, Jan; Detraz, S; Olanterä, L; Stejskal, P; Sigaud, C; Soos, C; Vasey, F

    2013-01-01

    We summarize the results obtained in a series of radiation tests of candidate laser and photodiode components for use in the Versatile Transceiver (VTRx), the front-end component of the Versatile Link. We have carried out radiation testing at a full spectrum of sources (neutrons, pions, gammas) and can now compare the results and show that the range of components that meet the radiation tolerance requirements is rather large. In addition, devices have been operated in a high magnetic field to qualify them for use in (HL-) LHC detectors.

  19. Displacement damage effects in pinned photodiode CMOS image sensors

    International Nuclear Information System (INIS)

    This paper investigates the effects of displacement damage in Pinned Photodiode (PPD) CMOS Image Sensors (CIS) using proton and neutron irradiations. The DDD ranges from 12 TeV/g to 1.2 * 106 TeV/g. Particle fluence up to 5 * 1014 n.cm-2 is investigated to observe electro-optic degradation in harsh environments. The dark current is also investigated and it would appear that it is possible to use the dark current spectroscopy in PPD CIS. The dark current random telegraph signal is also observed and characterized using the maximum transition amplitude. (authors)

  20. High resolution alpha spectroscopy with low cost photodiodes

    International Nuclear Information System (INIS)

    Energy resolution for α-spectra comparable to that from good quality surface barrier detectors has been obtained with inexpensive commercial silicon photodiodes. Using a low noise charge-sensitive preamplifier, an alpha energy resolution of less than 15 keV (fwhm) was achieved for 5.486 MeV α-particles from 241Am; this performance enables fine structure peaks to be clearly observed for 239Pu, 241Am, and 244Cm in a mixed α-source. The energy response was found to be highly linear and stable over long periods of operation. Results for other radiations are also briefly described. (orig.)

  1. Breakdown voltage in thin III-V avalanche photodiodes

    Science.gov (United States)

    Saleh, Mohammad A.; Hayat, Majeed M.; Kwon, Oh-Hyun; Holmes, Archie L.; Campbell, Joe C.; Saleh, Bahaa E. A.; Teich, Malvin C.

    2001-12-01

    The dead-space multiplication theory of Hayat and Saleh [J. Lightwave Technol. 10, 1415 (1992)], in conjunction with the multiplication-width-independent ionization-coefficient model developed by Saleh et al. [IEEE Trans. Electron Devices 47, 625 (2000)], are shown to accurately predict breakdown voltages for thin avalanche photodiodes of GaAs, InP, In0.52Al0.48As, and Al0.2Ga0.8As, over a broad range of device widths. The breakdown voltage is determined from the analytical expression for the impulse-response-function decay rate.

  2. Innovative Detection System of Ochratoxin A by Thin Film Photodiodes

    OpenAIRE

    Riccardo Scipinotti; Alessandra Ricelli; Augusto Nascetti; Corrado Fanelli; Gianpiero de Cesare; Domenico Caputo

    2007-01-01

    In this work we present, for the first time, a rapid, compact and innovative method for detection of Ochratoxin A (OTA) based on hydrogenated amorphous silicon (a-Si:H) sensors. 2 μl of acidified toluene containing OTA at different concentrations were spotted on the silica side of a High Performance Thin Layer Cromatography plate and aligned with a a-Si:H p-i-n photodiode deposited by Plasma Enhanced Chemical Vapor Deposition on a different glass substrate. As an UV radiation excites the myco...

  3. A new hybrid pneumatic combustion engine to improve fuel consumption of wind–Diesel power system for non-interconnected areas

    International Nuclear Information System (INIS)

    Highlights: ► We model thermodynamic ideal cycle of a new hybrid pneumaticcombustion engine. ► We optimize commands of all modes and calculate maps of fuel and air consumption. ► We evaluate fuel economy for Wind–Diesel system function of tank volume and wind penetration. ► We find up to 10% of fuel economy i.e. 80 t/year with 100% wind penetration. ► Fuel economy increases with wind penetration and with volume but has asymptotic value. -- Abstract: This paper presents an evaluation of an optimized Hybrid Pneumatic-Combustion Engine (HPCE) concept that permits reducing fuel consumption for electricity production in non-interconnected remote areas, originally equipped with hybrid Wind–Diesel System (WDS). Up to now, most of the studies on the pneumatic hybridization of Internal Combustion Engines (ICE) have dealt with two-stroke pure pneumatic mode. The few studies that have dealt with hybrid pneumatic-combustion four-stroke mode require adding a supplementary valve to charge compressed air in the combustion chamber. This modification means that a new cylinder head should be fabricated. Moreover, those studies focus on spark ignition engines and are not yet validated for Diesel engines. Present HPCE is capable of making a Diesel engine operate under two-stroke pneumatic motor mode, two-stroke pneumatic pump mode and four-stroke hybrid mode, without needing an additional valve in the combustion chamber. This fact constitutes this study’s strength and innovation. The evaluation of the concept is based on ideal thermodynamic cycle modeling. The optimized valve actuation timings for all modes lead to generic maps that are independent of the engine size. The fuel economy is calculated for a known site during a whole year, function of the air storage volume and the wind power penetration rate.

  4. A Rule-Based Energy Management Strategy for a Plug-in Hybrid School Bus Based on a Controller Area Network Bus

    OpenAIRE

    Jiankun Peng; Hao Fan; Hongwen He; Deng Pan

    2015-01-01

    This paper presents a rule-based energy management strategy for a plug-in hybrid school bus (PHSB). In order to verify the effectiveness and rationality of the proposed energy management strategy, the powertrain and control models were built with MATLAB/Simulink. The PHSB powertrain model includes an engine model, ISG (integrated started and generator) model, drive motor model, power battery packs model, driver model, and vehicle longitudinal dynamics model. To evaluate the controller area ne...

  5. Effect of Fabric Cover and Pore Area Distribution of Carbon/Stainless Steel/Polypropylene Hybrid Yarn-Woven Fabric on Electromagnetic Shielding Effectiveness

    Science.gov (United States)

    Krishnasamy, Jagatheesan; Ramasamy, Alagirusamy; Das, Apurba; Basu, Ananjan

    2016-06-01

    The electromagnetic shielding behavior of fabrics woven with carbon/stainless steel/polypropylene (C/SS/PP) hybrid yarns were investigated in the frequency range of 300 kHz to 1.5 GHz. This study mainly emphasizes the electromagnetic shielding behavior of C/SS/PP hybrid yarn fabric and the effect of different fabric parameters such as pick density, fabric architecture and number of fabric layers on shielding effectiveness (SE) of fabrics with C/SS/PP hybrid yarns. The SE of fabric samples were tested by a vector network analyzer using a coaxial transmission line tester. In addition, surface images of different fabric structures were examined to appreciate the effect of yarn floats on the shielding behavior of fabrics. From the SE test, it was observed that an increase in pick density increases the SE of C/SS/PP hybrid yarn fabric due to addition of carbon and SS content in the fabric. Besides, the fabric cover and pore area distribution are also changed for varying pick densities. Essentially, a fabric's architecture plays an important role in the fabric cover and pore area distribution. The one-end float (1/1 plain) fabric of 6.3 ppcm provides higher shielding of 88.44 dB than a 4-end (4/1 twill) or 7-end float (8-end satin) fabrics of 6.3 ppcm. Moreover, an increase in the number of fabric layers also improves the SE of fabrics. The developed C/SS/PP hybrid yarn fabric can be used for shielding wireless transmissions, radar transmissions and for shielding panels.

  6. Hybrid photodetector for single-molecule spectroscopy and microscopy

    OpenAIRE

    Michalet, X.; Cheng, Adrian; Antelman, Joshua; Suyama, Motohiro; Arisaka, Katsushi; Weiss, Shimon

    2008-01-01

    We report benchmark tests of a new single-photon counting detector based on a GaAsP photocathode and an electron-bombarded avalanche photodiode developed by Hamamatsu Photonics. We compare its performance with those of standard Geiger-mode avalanche photodiodes. We show its advantages for FCS due to the absence of after-pulsing and for fluorescence lifetime measurements due to its excellent time resolution. Its large sensitive area also greatly simplifies setup alignment. Its spectral sensiti...

  7. High-contrast X-ray micro-tomography of low attenuation samples using large area hybrid semiconductor pixel detector array of 10×5 Timepix chips

    International Nuclear Information System (INIS)

    State-of-the-art hybrid pixel semiconductor detectors provide excellent imaging properties such as unlimited dynamic range, high spatial resolution, high frame rate and energy sensitivity. Nevertheless, a limitation in the use of these devices for imaging has been the small sensitive area of a few square centimetres. In the field of microtomography we make use of a large area pixel detector assembled from 50 Timepix edgeless chips providing fully sensitive area of 14.3×7.15 cm2. We have successfully demonstrated that the enlargement of the sensitive area enables high-quality tomographic measurements of whole objects with high geometrical magnification without any significant degradation in resulting reconstructions related to the chip tilling and edgeless sensor technology properties. The technique of micro-tomography with the newly developed large area detector is applied for samples formed by low attenuation, low contrast materials such a seed from Phacelia tanacetifolia, a charcoalified wood sample and a beeswax seal sample

  8. High-contrast X-ray micro-tomography of low attenuation samples using large area hybrid semiconductor pixel detector array of 10 × 5 Timepix chips

    Science.gov (United States)

    Karch, J.; Krejci, F.; Bartl, B.; Dudak, J.; Kuba, J.; Kvacek, J.; Zemlicka, J.

    2016-01-01

    State-of-the-art hybrid pixel semiconductor detectors provide excellent imaging properties such as unlimited dynamic range, high spatial resolution, high frame rate and energy sensitivity. Nevertheless, a limitation in the use of these devices for imaging has been the small sensitive area of a few square centimetres. In the field of microtomography we make use of a large area pixel detector assembled from 50 Timepix edgeless chips providing fully sensitive area of 14.3 × 7.15 cm2. We have successfully demonstrated that the enlargement of the sensitive area enables high-quality tomographic measurements of whole objects with high geometrical magnification without any significant degradation in resulting reconstructions related to the chip tilling and edgeless sensor technology properties. The technique of micro-tomography with the newly developed large area detector is applied for samples formed by low attenuation, low contrast materials such a seed from Phacelia tanacetifolia, a charcoalified wood sample and a beeswax seal sample.

  9. Study on the formation of current characteristics of a silicon photodiode with rectifying barriers

    Directory of Open Access Journals (Sweden)

    Karimov A. V.

    2013-02-01

    Full Text Available The article presents the results of studies on silicon photodiode double-barrier structure with back-to-back rectifying junctions «metal — semiconductor» in the photodiode and photovoltaic modes. Such structures are of interest for the development of input devices for weak optical signals.

  10. A Novel Photodiode for Reflectance Pulse Oximetry in low-power applications

    DEFF Research Database (Denmark)

    Haahr, Rasmus Grønbek; Duun, Sune; Birkelund, Karen;

    2007-01-01

    The amount of light collected is crucial for low-power applications of pulse oximetry. In this work a novel ring-shaped backside photodiode has been developed for a wearable reflectance pulse oximeter. The photodiode is proven to work with a dual LED with wavelengths of 660 nm and 940 nm. For the...

  11. Performance Analysis of Si-Based Ultra-Shallow Junction Photodiodes for UV Radiation Detection

    NARCIS (Netherlands)

    Shi, L.

    2013-01-01

    This thesis presents a performance investigation of newly-developed ultra-shallow junction photodiodes (PureB-diodes) for ultraviolet (UV) radiation detection. The photodiodes are fabricated by pure boron chemical vapor deposition (PureB CVD) technology, which can provide nanometer-thin boron cappin

  12. PIN photo-diodes as radiation detectors in accelerator applications

    International Nuclear Information System (INIS)

    We have been using PIN photo-diodes originally suited for light detection as radiation detectors in several applications: photon monitoring in X-ray machines in industrial and medical applications, X-ray spectroscopy for identification of radioactive materials and XRF, and charged particle spectroscopy. The versatility of these devices as radiation detectors has led us to apply it in several accelerator experiments. This work presents an overview of the results obtained in several experiments: the measurement of charged particles up to 12 MeV in a Tandem accelerator, the measurement of the Bremstralung radiation obtained in an experimental electron accelerator in the range from 70 keV to 470 keV, the direct measurement of the intensity of the electron beam; also the application of PIN photo-diodes in the measurement of the intensity of photons in lineal accelerators used in radiotherapy up to 18 MeV. The front end conditioning electronics associated with the detectors is also described for every application: low noise charge sensitive preamplifiers and current amplifiers are used. The PIN diodes are a good choice for radiation detection in several accelerator applications with the advantage of a good position resolution due to its small size, good sensitivity for different radiation fields and low cost, and can be used to build a wide variety of detection systems around accelerator experiments. (author)

  13. Performance limitations of InGaAs photodiodes

    Science.gov (United States)

    Rogalski, Antoni

    1999-04-01

    The carrier lifetimes in InxGa1-xAs (InGaAs) ternary alloys for radiative and Auger recombination are calculated for temperature 300 K in the short wavelength range 1.5 recycling, an order of magnitude enhancements in the radiative lifetimes over those obtained from the standard van Roosbroeck and Shockley expression, has been assumed. The possible Auger recombination mechanisms (CHCC, CHLH and CHSH processes) in direct-gap semiconductors are investigated. In n-type and p-type materials the carrier lifetimes are similar. It is clearly shown that in the range of low doping concentration, the carrier lifetime is determined by radiative recombination. For n-type material in the range of higher doping level, a competition between radiative and CHCC processes take place; instead for p-type materials the most effective channel of Auger mechanisms is the CHSH process. A special attention has been put on discussion of the carrier lifetimes in both types of In0.53Ga0.47As materials. Consequence of enhancement in the radiative lifetime leads to higher ultimate performance of photodiodes. The performance (RoA product) of heterostructure InGaAs photovoltaic devices are analyzed. Both the n-on-p (with p-type active region) as well as p-on- n (with n-type active region) are considered. Finally, theoretically predicted performance of InGaAs photodiodes are compared with experimental data reported by other authors.

  14. Linearity of P-N junction photodiodes under pulsed irradiation

    CERN Document Server

    Stuik, R

    2002-01-01

    The dependence of the sensitivity on the radiation pulse length for a P-N junction photodiode has been investigated over an extended range of pulse lengths, from 170 ns to 1.2 ms. The power incident on the diode surface was varied between 1.6 and 118 mW. A novel method was used to generate the light pulses with variable length, while keeping the temporal pulse shape and the intensity constant. The method consists of using a rotating mirror in combination with a DC light source, in our case at 633 and 532 nm. In this way, the pulse shape only depends on the geometry of the setup, with the pulse length solely determined by the rotation frequency of the mirror. No further calibration is needed for determination of the pulse intensity and shape. Accuracies obtained are better than 2%, mainly determined by instabilities in the setup. The sensitivity of an IRD AXUV-100 photodiode was studied, both with and without a reverse bias voltage applied. At unbiased conditions and irradiation levels well below the saturatio...

  15. Modeling Scintillator-photodiodes As Detectors For Megavoltage Computed Tomography

    CERN Document Server

    Monajemi, T T

    2004-01-01

    The imaging characteristics of a cadmium tungstate, CdWO 4, detector was modeled and measured in 1.25 MeV and 6 MV beams. The detector includes eight CdWO4 crystals, each 2.75 x 8 x 10 mm 3, bonded together and in contact with sixteen silicon photodiodes such that, each crystal covers two photodiodes. The characteristics investigated are the frequency dependent modulation transfer function, MTF (f), noise power spectrum, NPS (f), and detective quantum efficiency, DQE (f). The tools used in modeling these characteristics include the Monte Carlo simulation codes, EGSnrc and DETECT2000, for high energy and optical photons, respectively. The DQE of the detector was found to be approximately constant at 26% and 19% for 1.25 MeV and 6 MV photons up to a spatial frequency of 0.16 cycles/mm, respectively. Due to pulse to pulse fluctuations in the output of the linear accelerator, the NPS(f) and DQE(f) were not verified experimentally in a 6 MV beam.

  16. Fast microprogrammed fields sensing with photodiode matrix array

    International Nuclear Information System (INIS)

    For higher speed image processing, it is better to output solely lines that store information and to skip the others than to read out all the pixels and then to select out large store of video data. In order to have the two-dimensional spectroscopic measurments timeresolved, the principle of video data reduction was realized by means of modular camera with photodiode matrix. A Reticon matrix array of 256 x 256 photodiodes with access and reset switches as well as x and y readout shift registers on chip has been chosen. Camera control and programmed row clock operation, as well as remote programming and transfer of control words to the camera is described. The analogue video data that are controlled by this system are converted by a 10 MHz A/D converter into 12 bit-words. Using a very rapid accumulation device, a programmed number of digitized pixel data of the same row but of different neighbouring columns can be added on-line. This will limit the volume of data and raise the signal-to-noise ratio but decrease the local resolution

  17. Metal-diamond semiconductor interface and photodiode application

    International Nuclear Information System (INIS)

    Carrier transport mechanism at p-diamond/metal interfaces are studied by analyzing dependencies of specific contact resistance (ρc) on measurement temperature and acceptor concentration (NA). A variety of metals, such as Ti, Mo, Cr (carbide-forming metals), Pd, and Co (carbon-soluble metals), are deposited on boron-doped polycrystalline diamond layers, and the ρc values are measured by a transmission line method. Thermal annealing which produces metallurgical reactions between diamond and metal reduces Schottky barrier heights of the contact metals to a constant value. It is found that use of a metal compound which does not react with diamond at elevated temperatures is the key to develop the thermally stable Schottky contact material for p-diamond. Along this guideline, we test the suitability of tungsten carbide (WC) and hafnium nitride (HfN) as thermally stable Schottky contacts to develop a thermally stable, deep-ultraviolet (DUV) photodiode using a boron-doped homoepitaxial p-diamond epilayer. Thermal annealing at 500 deg. C improves the rectifying current-voltage characteristics of the photodiode, resulting in the excellent thermal stability. The discrimination ratio between DUV and visible light is measured to be as large as 106 at a reverse bias voltage as small as 2 V, and it remains almost constant after annealing at 500 deg. C for 5 h. Metal carbide and nitride contacts for diamond are thus useful for developing a thermally stable diamond DUV photodetector

  18. A protein biosensor using Geiger mode avalanche photodiodes

    International Nuclear Information System (INIS)

    A compact optical sensor specifically designed for protein detection is introduced in this work. The sensor takes advantage of avalanche photodiode's ultra-high sensitivity when operated in Geiger mode and is capable of detecting and quantifying very low light levels down to the single photons. The sensor has been tested with a luciferase gene reporter molecule detection system in Escherichia coli samples. The luciferase production is monitored via the APD and the luminescence amount detected is directly proportional to the amount of protein being produced. This reporter system will allow us to elucidate specific sources of proteins and to monitor the dynamics of protein activity within the cell in a real-time setting. The significant increase of photodiode breakdowns after the samples are applied to the sensor is the mechanism of detecting the bioluminescence. The degree of increase can be used to estimate the quantity of protein molecules. The sensor is packaged in a Teflon lightproof container to form a compact detection system

  19. Double-Layer Silicon PIN Photodiode X-Ray Detector for a Future X-ray Timing Mission

    OpenAIRE

    Feng, Hua; Kaaret, Philip; Andersson, Hans

    2006-01-01

    A double-layer silicon detector consisting of two 500micron-thick silicon PIN photodiodes with independent readouts was mounted in a vacuum chamber and tested with X-ray sources. The detector is sensitive from 1-30 keV with an effective area of 6 mm^2. The detector performs best at -35 C with an energy resolution of 220 eV (FWHM, full width at half maximum) at 5.9 keV, and is able to operate at room temperature, +25 C, with moderate resolution around 760 eV (FWHM). The response of the top lay...

  20. Recent progress of avalanche photodiodes in high-resolution X-rays and Gamma-rays detection

    OpenAIRE

    Kataoka, J; Saito, T; Kuramoto, Y.; Ikagawa, T.; Yatsu, Y.; Kotoku, J.; Arimoto, M.; Kawai, N.; Ishikawa, Y.; Kawabata, N.

    2006-01-01

    We have studied the performance of large area avalanche photodiodes (APDs) recently developed by Hamamatsu Photonics K.K, in high-resolution X-rays and Gamma-rays detections. We show that reach-through APD can be an excellent soft X-ray detector operating at room temperature or moderately cooled environment. We obtain the best energy resolution ever achieved with APDs, 6.4 % for 5.9 keV X-rays, and obtain the energy threshold as low as 0.5 keV measured at -20deg. Thanks to its fast timing res...

  1. Economic Feasibility of Stand-Alone Wind Energy Hybrid with Bioenergy from Anaerobic Digestion for Electrification of Remote Area of Pakistan

    Directory of Open Access Journals (Sweden)

    Abdur Raheem

    2015-02-01

    Full Text Available Hybrid Renewable Energy systems (HRES are gaining importance throughout the world because of the finite sources of oil and gas reservoirs. These have the great ability in the production of electrical energy and cleaning the environment. It is difficult to get grid electricity in the remote areas where no infrastructure exists. The utilization of renewable sources is the ultimate solution for the generation of electricity. In this paper, the economic modeling of Hybrid system consisting of Wind/biomass is explored for the remote area ‘Jangiah’ of Balochistan province, Pakistan. Anaerobic Digestion of biomass is used to get biogas. This source is used to complement the uncertainties in the wind production. Homer is used to simulate the hybrid model. Economic analysis is performed to get the net present value (NPV and cost of energy. It is observed that wind/biomass alone is capable to meet the demand of community which consumes 60 kW peak daily along with the storage backup. This system is the most economical with COE equal to 0.118 US$/kWh following the hybrid biomass/wind/diesel system with COE 0.202 US$/kWh. The sensitivity analysis is carried out and shows that the proposed system is sensitive to the prices of fossil fuel and project lifespan. The net present value increases as the lifetime of the project increases from 15 years to 30 years. It can also be concluded that if the price of the diesel drops below 0.8 US$/liter, the traditional system using fossil fuels will become the most suitable system for the generation of electricity in remote areas.

  2. A Ring-shaped photodiode designed for use in a reflectance pulse oximetry sensor in wireless health monitoring applications

    DEFF Research Database (Denmark)

    Duun, Sune; Haahr, Rasmus Grønbek; Birkelund, Karen;

    2010-01-01

    We report a photodiode for use in a reflectance pulse oximeter for use in autonomous and low-power homecare applications. The novelty of the reflectance pulse oximeter is a large ring shaped backside silicon pn photodiode. The ring-shaped photodiode gives optimal gathering of light and thereby en...

  3. A hybrid WDM/OCDMA ring with a dynamic add/drop function based on Fourier code for local area networks.

    Science.gov (United States)

    Choi, Yong-Kyu; Hosoya, Kenta; Lee, Chung Ghiu; Hanawa, Masanori; Park, Chang-Soo

    2011-03-28

    We propose and experimentally demonstrate a hybrid WDM/OCDMA ring with a dynamic add/drop function based on Fourier code for local area networks. Dynamic function is implemented by mechanically tuning the Fourier encoder/decoder for optical code division multiple access (OCDMA) encoding/decoding. Wavelength division multiplexing (WDM) is utilized for node assignment and 4-chip Fourier code recovers the matched signal from the codes. For an optical source well adapted to WDM channels and its short optical pulse generation, reflective semiconductor optical amplifiers (RSOAs) are used with a fiber Bragg grating (FBG) and gain-switched. To demonstrate we experimentally investigated a two-node hybrid WDM/OCDMA ring with a 4-chip Fourier encoder/decoder fabricated by cascading four FBGs with the bit error rate (BER) of <10(-9) for the node span of 10.64 km at 1.25 Gb/s. PMID:21451649

  4. Si/Ge photodiodes for coherent and analog communication

    Science.gov (United States)

    Piels, Molly

    High-speed photodiodes have diverse applications in wireless and fiber communications. They can be used as output stages for antenna systems as well as receivers for fiber optic networks. Silicon is an attractive substrate material for photonic components for a number of reasons. Low cost manufacturing in CMOS fabrication facilities, low material loss at telecommunications wavelengths, and relatively simple co-packaging with electronics are all driving interest in silicon photonic devices. Since silicon does not absorb light at telecommunications wavelengths, photodetector fabrication requires the integration of either III-V materials or germanium. Recent work on germanium photodetectors has focused on low-capacitance devices suitable for integration with silicon electronics. These devices have excellent bandwidth and efficiency, but have not been designed for the levels of photocurrent required by coherent and analog systems. This thesis explores the design, fabrication, and measurement of photodetectors fabricated on silicon with germanium absorbing regions for high speed and high power performance. There are numerous design trade-offs between speed, efficiency, and output power. Designing for high bandwidth favors small devices for low capacitance. Small devices require abrupt absorption profiles for good efficiency, but design for high output power favors large devices with dilute absorption. The absorption profile can be controlled by the absorber layer thickness, but this will also affect the bandwidth and power handling. This work quantifies the trade-offs between high speed, high efficiency, and high power design. Intrinsic region thickness and absorption profile are identified as the most important design variables. For PIN structures, the absorption profile and intrinsic region thickness are both functions of the Ge thickness, but in uni-traveling carrier (UTC) structures the absorption profile and intrinsic region can be designed independently. This

  5. X-ray detection with a scintillating YAP-window hybrid photomultiplier tube

    CERN Document Server

    D'Ambrosio, C; Leutz, H; Puertolas, D; Rosso, E

    2000-01-01

    A YAP(YAlO/sub 3/:Ce)-scintillating window, coated on its inner surface with an S20-photocathode, seals a cross-focusing hybrid photomultiplier tube (HPMT) equipped with a small p-i-n anode of 2-mm diameter. This new radiation detector separates X-ray lines down to about 2-keV peak energy from the HPMT noise. Its detection efficiency for high gamma energies depends on the YAP-window thickness and amounts to about 18% attenuation at 400-keV energy in the present version. Competitive radiation detectors like Si photodiodes and Si drift chambers are discussed and compared to our prototype, with particular attention given to their energy resolution and noise performance, which limits their active area considerably. (19 refs).

  6. Detection of charged particles through a photodiode: design and analysis

    International Nuclear Information System (INIS)

    This project develops and construct an charge particle detector mean a pin photodiode array, design and analysis using a silicon pin Fotodiodo that generally is used to detect visible light, its good efficiency, size compact and reduced cost specifically allows to its use in the radiation monitoring and alpha particle detection. Here, so much, appears the design of the system of detection like its characterization for alpha particles where one is reported as alpha energy resolution and detection efficiency. The equipment used in the development of work consists of alpha particle a triple source composed of Am-241, Pu-239 and Cm-244 with 5,55 KBq as total activity, Maestro 32 software made by ORTEC, a multi-channel card Triumph from ORTEC and one low activity electroplated uranium sample. (Author)

  7. Systematic afterpulsing-estimation algorithms for gated avalanche photodiodes

    CERN Document Server

    Wiechers, Carlos; Muñiz-Sánchez, Oscar R; Yépiz, Pablo Daniel; Arredondo-Santos, Alejandro; Hirsch, Jorge G; U'Ren, Alfred B

    2016-01-01

    We present a method designed to efficiently extract optical signals from InGaAs avalanche photodiodes (APDs) operated in gated mode. In particular, our method permits an estimation of the fraction of counts which actually results from the signal being measured, as opposed to being produced by noise mechanisms, specifically by afterpulsing. Our method in principle allows the use of InGaAs APDs at high detection efficiencies, with the full operation bandwidth, either with or without resorting to the application of a dead time. As we show below, our method can be used in configurations where afterpulsing exceeds the genuine signal by orders of magnitude, even near saturation. The algorithms which we have developed are suitable to be used either in real-time processing of raw detection probabilities or in post-processing applications, after a calibration step has been performed. The algorithms which we propose here can complement technologies designed for the reduction of afterpulsing.

  8. Studies of avalanche photodiodes for scintillating fibre tracking readout

    International Nuclear Information System (INIS)

    Avalanche Photodiodes (APDs) operating in ''Geiger Mode'' have been studied in a fibre tracking readout environment. A fast recharge circuit has been developed for high rate data taking, and results obtained from a model fibre tracker in the test beam at Brookhaven National Laboratory are presented. A high rate calibrated light source has been developed using a commercially available laser diode and has been used to measure the efficiency of the devices. The transmission of the light from a 1mm fibre onto a 0.5mm diameter APD surface has been identified as the main problem in the use of these particular devices for scintillating fibre tracking in the Superconducting Supercollider environment. Solutions to this problem are proposed

  9. Model of single-electron performance of micropixel avalanche photodiodes

    CERN Document Server

    Sadygov, Z; Akhmedov, G; Akhmedov, F; Khorev, S; Mukhtarov, R; Sadigov, A; Sidelev, A; Titov, A; Zerrouk, F; Zhezher, V

    2014-01-01

    An approximate iterative model of avalanche process in a pixel of micropixel avalanche photodiode initiated by a single photoelectron is presented. The model describes development of the avalanche process in time, taking into account change of electric field within the depleted region caused by internal discharge and external recharge currents. Conclusions obtained as a result of modelling are compared with experimental data. Simulations show that typical durations of the front and rear edges of the discharge current have the same magnitude of less than 50 ps. The front of the external recharge current has the same duration, however duration of the rear edge depends on value of the quenching micro-resistor. It was found that effective capacitance of the pixel calculated as the slope of linear dependence of the pulse charge on bias voltage exceeds its real capacitance by a factor of two.

  10. Innovative Detection System of Ochratoxin A by Thin Film Photodiodes

    Science.gov (United States)

    Caputo, Domenico; de Cesare, Giampiero; Fanelli, Corrado; Nascetti, Augusto; Ricelli, Alessandra; Scipinotti, Riccardo

    2007-01-01

    In this work we present, for the first time, a rapid, compact and innovative method for detection of Ochratoxin A (OTA) based on hydrogenated amorphous silicon (a-Si:H) sensors. 2 μl of acidified toluene containing OTA at different concentrations were spotted on the silica side of a High Performance Thin Layer Cromatography plate and aligned with a a-Si:H p-i-n photodiode deposited by Plasma Enhanced Chemical Vapor Deposition on a different glass substrate. As an UV radiation excites the mycotoxin, the re-emitted light is detected by the a-Si:H sensor. Results show a very good linearity between OTA concentration and the sensor photocurrent over almost three orders of magnitude. The minimum detected OTA concentration is equal to 0.1ng, showing that the presented system has the potential for a low cost system suitable for the early detection of toxins in foods.

  11. Innovative Detection System of Ochratoxin A by Thin Film Photodiodes

    Directory of Open Access Journals (Sweden)

    Riccardo Scipinotti

    2007-07-01

    Full Text Available In this work we present, for the first time, a rapid, compact and innovativemethod for detection of Ochratoxin A (OTA based on hydrogenated amorphous silicon (a-Si:H sensors. 2 μl of acidified toluene containing OTA at different concentrations werespotted on the silica side of a High Performance Thin Layer Cromatography plate andaligned with a a-Si:H p-i-n photodiode deposited by Plasma Enhanced Chemical VaporDeposition on a different glass substrate. As an UV radiation excites the mycotoxin, the re-emitted light is detected by the a-Si:H sensor. Results show a very good linearity betweenOTA concentration and the sensor photocurrent over almost three orders of magnitude. Theminimum detected OTA concentration is equal to 0.1ng, showing that the presented systemhas the potential for a low cost system suitable for the early detection of toxins in foods.

  12. A Proposal for CO2 Abatement in Urban Areas: The UDR1–Lethe© Turbo-Hybrid Vehicle

    Directory of Open Access Journals (Sweden)

    Max Lora

    2011-03-01

    Full Text Available For years the interest of the University of Roma 1 (UDR1 research group has been focused on the development of a Hybrid Series vehicle (called Lethe©, different from standard ones, thanks to the use of a Gas Turbine (GT set as a thermal engine. The reason for this choice resides in the opportunity to reduce weight and dimensions, in comparison to a traditional Internal Combustion Engine. It’s currently not possible to use the GT engine set directly for the vehicle traction, so the UDR1 HS configuration only shows the GT set connected with the electric generator. The result is that the traction is purely electric. The resulting engine configuration is commonly described as a Hybrid Series Plug In. Several previous studies have been carried out, and this research has allowed us to define the correct ratio (Degree of Hybridization between the installed power of the battery pack and that of the GT electric generator which simultaneously guarantee the main life for the battery package and the capacity of the vehicle to complete a common mission without lack of energy or stopping. This article reports the final step of the research: once all data has been calculated, how to “hybridize” a commercial city car, passenger sedan or any other vehicle.

  13. Optimal management of compressed air energy storage in a hybrid wind-pneumatic-diesel system for remote area's power generation

    International Nuclear Information System (INIS)

    Electricity in Canadian remote areas is, historically, produced using Diesel generators. Its total production cost is very high not only due to inherent cost of fuel but also due to transportation and maintenance costs. Moreover, the use of fossil fuels is a significant source of greenhouse gas emissions. Hybrid systems that combine wind turbines and diesel generators reduce fuel consumption, operational cost and pollution. Adding a storage element to this hybrid system increases the penetration level of renewable sources, i.e. the percentage of renewable energy in the overall production, and further improves fuel savings. Among all energy storage techniques, CAES (compressed air energy storage) has several advantages to be combined with hybrid WDS (wind-diesel systems), due to its low cost, high power density and reliability. In a previous work, we have exposed and have evaluated a new technique to transform the existing Diesel engine to a HPCE (hybrid pneumatic combustion engine), able to operate as a bi-source engine (compressed air and fuel). Based on ideal cycle modeling, we provided a first estimation of the annual fuel economy obtained with this multi-hybrid system (WDS–HPCE). As a continuity to this work, we will compare, in this article, several strategies of management of the CAES. We will demonstrate that one of these strategies that uses an algorithm based on wind speed forecast, is the most efficient. We will, also, provide an evaluation of the fuel economy generated by the WDS–HPCE, as a function of the wind power penetration ratio, the air-storage capacity, and the average wind speed on site. - Highlights: • We model thermodynamic cycle of a new hybrid pneumatic combustion engine. • we evaluate all ratios of pneumatic power to fuel power and select two highlighted. • we calculate maps of fuel and air consumption for the highlighted strategies. • We evaluate fuel consumption for each strategy and for a combination between both. • we get

  14. The photodiode of UV-range on the basis of ZnSe

    Directory of Open Access Journals (Sweden)

    Perevertailo V. L.

    2010-03-01

    Full Text Available The construction and technology of Shottky photodiode on the basis of ZnSe, sensible in the ultraviolet region of spectrum are considered. Researches of electrophysical and photo-electric descriptions of photodiodes of Shottky Nі–ZnSe(Te,O–Іn are conducted and it is shown, that they can be applied in devices for radiometry and dissymmetry UV radiations in the ranges UVA, UVB and UVC. Comparison of parameters of developed UV photodiodes based on ZnSe with analogues showed that small capacitance and low value of dark current is their substantial difference of other ones.

  15. Remobilization of granitoid rocks through mafic recharge: evidence from basalt-trachyte mingling and hybridization in the Manori-Gorai area, Mumbai, Deccan Traps

    Science.gov (United States)

    Zellmer, Georg F.; Sheth, Hetu C.; Iizuka, Yoshiyuki; Lai, Yi-Jen

    2012-01-01

    Products of contrasting mingled magmas are widespread in volcanoes and intrusions. Subvolcanic trachyte intrusions hosting mafic enclaves crop out in the Manori-Gorai area of Mumbai in the Deccan Traps. The petrogenetic processes that produced these rocks are investigated here with field data, petrography, mineral chemistry, and whole rock major, trace, and Pb isotope chemistry. Local hybridization has occurred and has produced intermediate rocks such as a trachyandesitic dyke. Feldspar crystals have complex textures and an unusually wide range in chemical composition. Crystals from the trachytes cover the alkali feldspar compositional range and include plagioclase crystals with anorthite contents up to An47. Crystals from the mafic enclaves are dominated by plagioclase An72-90, but contain inclusions of orthoclase and other feldspars covering the entire compositional range sampled in the trachytes. Feldspars from the hybridized trachyandesitic dyke yield mineral compositions of An80-86, An47-54, Ab94-99, Or45-60, and Or96-98, all sampled within individual phenocrysts. We show that these compositional features are consistent with partial melting of granitoid rocks by influx of mafic magmas, followed by magma mixing and hybridization of the partial melts with the mafic melts, which broadly explains the observed bulk rock major and trace element variations. However, heterogeneities in Pb isotopic compositions of trachytes are observed on the scale of individual outcrops, likely reflecting initial variations in the isotopic compositions of the involved source rocks. The combined data point to one or more shallow-level trachytic magma chambers disturbed by multiple injections of trachytic, porphyritic alkali basaltic, and variably hybridized magmas.

  16. High performance x-ray imaging detectors on foil using solution-processed organic photodiodes with extremely low dark leakage current (Presentation Recording)

    Science.gov (United States)

    Kumar, Abhishek; Moet, Date; van der Steen, Jan Laurens; van Breemen, Albert; Shanmugam, Santhosh; Gilot, Jan; Andriessen, Ronn; Simon, Matthias; Ruetten, Walter; Douglas, Alexander; Raaijmakers, Rob; Malinowski, Pawel E.; Myny, Kris; Gelinck, Gerwin

    2015-10-01

    High performance X-ray imaging detectors on foil using solution-processed organic photodiodes with extremely low dark leakage current Abhishek Kumara, Date Moeta, Albert van Breemena, Santhosh Shanmugama, Jan-Laurens van der Steena, Jan Gilota, Ronn Andriessena, Matthias Simonb, Walter Ruettenb, Alexander U. Douglasb, Rob Raaijmakersc, Pawel E. Malinowskid, Kris Mynyd and Gerwin H. Gelincka,e a. Holst Centre/TNO, High Tech Campus 31, Eindhoven 5656 AE, The Netherlands b. Philips Research, High Tech Campus 34, 5656 AE Eindhoven, The Netherlands c. Philips Healthcare, Veenpluis 6-8, 5684 PC Best, The Netherlands d. Department of Large Area Electronics, imec vzw, Kapeldreef 75, Leuven B3001, Belgium e. Applied Physics Department, TU Eindhoven, Eindhoven, The Netherlands We demonstrate high performance X-ray imaging detectors on foil suitable for medical grade X-ray imaging applications. The detectors are based on solution-processed organic photodiodes forming bulk-heterojunctions from photovoltaic donor and acceptor blend. The organic photodiodes are deposited using an industrially compatible slot die coating technique with end of line processing temperature below 100°C. These photodiodes have extremely low dark leakage current density of 10-7 mA/cm2 at -2V bias with very high yield and have peak absorption around 550 nm wavelength. We combine these organic photodiodes with high mobility metal oxide semiconductor based thin film transistor arrays with high pixel resolution of 200ppi on thin plastic substrate. When combined with a typical CsI(TI) scintillator material on top, they are well suited for low dose X-ray imaging applications. The optical crosstalk is insignificant upto resolution of 200 ppi despite the fact that the photodiode layer is one continuous layer and is non-pixelated. Low processing temperatures are another key advantage since they can be fabricated on plastic substrate. This implies that we can make X-ray detectors on flexible foil. Those

  17. GaN-Based, Low-Voltage Avalanche Photodiodes for Robust and Compact UV Imagers Project

    Data.gov (United States)

    National Aeronautics and Space Administration — This Phase I SBIR program is directed toward the development of a novel low-voltage (~10V) AlGaN-based multi-quantum well (MQW) avalanche photodiode (APD) on...

  18. Single Photon Sensitive HgCdTe Avalanche Photodiode Detector (APD) Project

    Data.gov (United States)

    National Aeronautics and Space Administration — A linear mode HgCdT electron-initiated avalanche photodiode (EAPD) capable of 1570nm photon detection efficiency (PDE) at >10 MHz will be developed. The Phase I...

  19. Characterization of Power-to-Phase Conversion in High-Speed P-I-N Photodiodes

    CERN Document Server

    Taylor, J; Hati, A; Nelson, C; Quinlan, F; Joshi, A; Diddams, S

    2011-01-01

    Fluctuations of the optical power incident on a photodiode can be converted into phase fluctuations of the resulting electronic signal due to nonlinear saturation in the semiconductor. This impacts overall timing stability (phase noise) of microwave signals generated from a photodetected optical pulse train. In this paper, we describe and utilize techniques to characterize this conversion of amplitude noise to phase noise for several high-speed (>10 GHz) InGaAs P-I-N photodiodes operated at 900 nm. We focus on the impact of this effect on the photonic generation of low phase noise 10 GHz microwave signals and show that a combination of low laser amplitude noise, appropriate photodiode design, and optimum average photocurrent is required to achieve phase noise at or below -100 dBc/Hz at 1 Hz offset a 10 GHz carrier. In some photodiodes we find specific photocurrents where the power-to-phase conversion factor is observed to go to zero.

  20. InGaAs p-i-n Photodiodes for Microwave Applications

    OpenAIRE

    Malyshev, Sergei; Chizh, A.; Andrievski, Vatslav

    2004-01-01

    The experimental and theoretical study of the surface-illuminated InGaAs p-i-n photodiodes for such microwave applications as photonic microwave generation, optical control of microwave circuits and optoelectronic mixing is presented.

  1. CsI(Tl)-photodiode detectors for gamma-ray spectroscopy

    CERN Document Server

    Fioretto, E; Viesti, G; Cinausero, M; Zuin, L; Fabris, D; Lunardon, M; Nebbia, G; Prete, G

    2000-01-01

    We report on the performances of CsI(Tl)-photodiode detectors for gamma-ray spectroscopy applications. Light output yield and energy resolution have been measured for different crystals and read-out configurations.

  2. Investigation of the avalanche photodiodes for the CMS electromagnetic calorimeter operated at high gain

    CERN Document Server

    Deiters, K; Godinovic, N; Ingram, Q; Longo, E; Montecchi, M; Musienko, Yu V; Nicol, S; Patel, B; Renker, D; Reucroft, S; Rusack, R W; Sakhelashvili, T M; Singovsky, A V; Soric, I; Swain, J D; Vikas, P

    2001-01-01

    Avalanche photodiodes (APD) with improved characteristics were developed by Hamamatsu Photonics for the electromagnetic calorimeter of the CMS experiment. This report presents measurements of the latest generation of APDs, which are capable to operate at high gains (~2000). (5 refs).

  3. Comparison of Spectral responsibility on Silicon PIN Photodiode Radiation Detectors due to Surface Encapsulation

    International Nuclear Information System (INIS)

    A Si PIN photodiode shows good performance to detect low energy X-ray and charged particles. Relatively high energy gamma-ray detection can be available when matched with an appropriate scintillator such as CsI(Tl). In this study, various encapsulations were applied on a fabricated Si PIN photodiode, and spectral responsibilities were compared to achieve a better quantum efficiency. Spectral responsibilities in the range of 300 nm to 550 nm are important to the PIN photodiode when it is applied to match with scintillators since the emission wavelength of most scintillators fall into this range. Application of appropriate encapsulation on the photodiode surface is necessary with the view of its rigidity and performance deterioration. A specific comparison with respect to the encapsulation methods will be presented at the conference since these results are currently being measured

  4. Improved two-dimensional responsivity physical model of a CMOS UV and blue-extended photodiode

    International Nuclear Information System (INIS)

    A CMOS UV and blue-extended photodiode is presented and fabricated for light detection in the ultraviolet/blue spectral range. An octagon homocentric ring-shaped geometry is used to improve the ultraviolet responsivity and suppress edge breakdown. This paper has established a two-dimensional responsivity physical model for the presented photodiode and given some numerical analyses. The dead layer effect, which is caused by the high-doping effects and boron redistribution, is considered when analyzing the distribution of the current of the proposed UV and blue-extended photodiode. In the dead layer, the boron doping profile decreases towards the surface. Simulated results illustrate that the responsivity in the UV range is obviously decreased by the effect of the dead layer, while it is not affected in the visible and near-infrared part of the spectrum. The presented photodiode is fabricated and the silicon tested results are given, which agree well with the simulated ones. (semiconductor devices)

  5. Electroless plating of noble metal nanoparticles for improved performance of silicon photodiodes via surface plasmon resonance

    Energy Technology Data Exchange (ETDEWEB)

    Blackwood, D.J.; Khoo, S.M. [Department of Materials Science and Engineering, National University of Singapore, 9 Engineering Drive 1, Singapore 117576 (Singapore)

    2010-07-15

    Surface plasmon resonance from noble metal nanoparticles is a promising way to improve the efficiencies of silicon based photodiodes and solar cells. Electroless plating is an extremely simple technique for producing such metallic nanoparticles. It is found that the deposition of gold on Si photodiodes occurs as chains that drastically reduce the photodiodes conversion efficiency. However, silver deposits as nano-islands that are efficient SPR centers, which improve the performance of Si photodiodes in the visible region; as measured by both IPCE and I-V curves. The greatest improvement observed was a 3.5% increase in J{sub sc} under solar irradiation. Although this improvement is lost upon annealing it can be regained by a further treatment in acidified HAuCl{sub 4}. Possible explanations for these latter two behaviors are proposed. (author)

  6. AN INVESTIGATION ON PHOTODIODE SWITCHING TIMES FOR PULSED HIGH RADIANT POWERS

    Directory of Open Access Journals (Sweden)

    Erdem ÖZÜTÜRK

    2004-02-01

    Full Text Available In many applications the light impinging on photodiode surface is pulsed. The change in parameter values in the equivalent circuit of photodiode is important if the amplitude of light pulses are large. In this situation, the change of parameter values with the amplitude of light pulse is nonlinear. Because of this, the nonlinear model of photodiode has been used in this search. By the reasons of photoconductive operation mode is a fast operation, the photoconductive circuit has been examined. In this study, according to the nonlinear behavior of photodiode at pulsed high radiant powers the changes of switching times have been investigated by using SPICE program and the changing of switching times with increasing radiant power has been showed.

  7. Plant Type and Its Effects on Canopy Structure at Heading Stage in Various Ecological Areas for a Two-line Hybrid Rice Combination, Liangyoupeijiu

    Institute of Scientific and Technical Information of China (English)

    LU Chuan-gen; HU Ning; YAO Ke-min; XIA Shi-jian; QI Qing-ming

    2010-01-01

    A two-line hybrid rice combination, Liangyoupeijiu, was used to estimate several factors of plant type, and environmental models for these factors at the heading stage were established using the data of eight ecological experimental sites in 2006 and 2007. According to climatic data from 1951 to 2005, the differences in those factors and their effects on plant canopy were analyzed for four rice cropping areas in China, including South China, the middle-lower reaches of the Yangtze River, Sichuan Basin, and river valley in Yunnan, China. The thickness of leaf layer (the distance from pulvinus of the third leaf from the top to the tip of flag leaf) and distribution of leaf area could be used as candidate indices for the plant type of a rice canopy.

  8. Large Area Nano-transfer Printing of Sub-50-nm Metal Nanostructures Using Low-cost Semi-flexible Hybrid Templates.

    Science.gov (United States)

    Nagel, Robin D; Haeberle, Tobias; Schmidt, Morten; Lugli, Paolo; Scarpa, Giuseppe

    2016-12-01

    In this work, we present a method for printing metal micro- and nanopatterns down to sub-50-nm feature sizes using replicated, defect-tolerant stamps made out of OrmoStamp®; material. The relevant parameters for a successful transfer over large areas were investigated and yields above 99 % have been achieved. Comparing our results to conventional nano-transfer printing using PDMS stamps, we find that the more rigid hybrid polymer used here prevents unintended transfer from interspaces between structures of large distance due to roof collapse and deformation of nano-sized structures due to lateral collapse. Yet, our stamps are flexible enough to ensure intimate contact with the underlying substrate over large areas even in the presence of defect particles. Additionally, the presented patterning technique is resist-, solvent-, and chemical-free and is therefore ideally suited for applications in organic nanoelectronics where standard nanostructuring methods can harm or destroy the organic material. PMID:26976429

  9. Awake craniotomy for cortical language mapping and resection of an arteriovenous malformation adjacent to eloquent areas under general anesthesia — A hybrid approach

    Directory of Open Access Journals (Sweden)

    Pree Nimmannitya

    2015-12-01

    Full Text Available Surgery of arteriovenous malformation (AVM is sometimes challenging and carries a high risk of morbidity, especially when the AVM is located in an eloquent area of the brain. Unlike gliomas, awake craniotomy has not been widely used for resection of AVM. The authors present a case of an AVM in the left frontal lobe which was successfully removed with the aid of awake craniotomy with cortical language mapping. In conclusion, awake craniotomy for functional cortical mapping is beneficial for AVM resection, especially when the lesion is located in or adjacent to eloquent areas of the brain. A hybrid approach with functional mapping in the awake condition and AVM resection under general anesthesia may be useful in selected cases. Furthermore, en bloc resection with the nidus embedded in the brain parenchyma may be a useful means of removal to reduce operation time and intraoperative blood loss if there is no apparent functional cortex surrounding the AVM, as in the present case.

  10. Large Area Nano-transfer Printing of Sub-50-nm Metal Nanostructures Using Low-cost Semi-flexible Hybrid Templates

    Science.gov (United States)

    Nagel, Robin D.; Haeberle, Tobias; Schmidt, Morten; Lugli, Paolo; Scarpa, Giuseppe

    2016-03-01

    In this work, we present a method for printing metal micro- and nanopatterns down to sub-50-nm feature sizes using replicated, defect-tolerant stamps made out of OrmoStamp®; material. The relevant parameters for a successful transfer over large areas were investigated and yields above 99 % have been achieved. Comparing our results to conventional nano-transfer printing using PDMS stamps, we find that the more rigid hybrid polymer used here prevents unintended transfer from interspaces between structures of large distance due to roof collapse and deformation of nano-sized structures due to lateral collapse. Yet, our stamps are flexible enough to ensure intimate contact with the underlying substrate over large areas even in the presence of defect particles. Additionally, the presented patterning technique is resist-, solvent-, and chemical-free and is therefore ideally suited for applications in organic nanoelectronics where standard nanostructuring methods can harm or destroy the organic material.

  11. High quality MgB2 thick films and large-area films fabricated by hybrid physical chemical vapor deposition with a pocket heater

    Science.gov (United States)

    Wang, S. F.; Chen, Ke; Lee, C.-H.; Soukiassian, A.; Lamborn, D. R.; DeFrain, R.; Redwing, J. M.; Li, Qi; Schlom, D. G.; Xi, X. X.

    2008-08-01

    A hybrid physical-chemical vapor deposition process using a pocket heater was developed for the growth of high quality epitaxial large-area MgB2 thin films and c-axis textured MgB2 thick films. This technique is able to independently control the substrate and Mg source temperatures and maintain sufficient Mg overpressure to ensure phase stability. The two-inch large-area MgB2 thin films showed uniform superconducting properties with the superconducting transition temperature Tc of about 40 K, residual resistivity ratio (RRR) of about 10, and critical current density Jc of about 107 A cm-2 (0 T, 5 K). The thick films (~10 µm) on sapphire substrates showed a maximum Tc of 40 K and RRR of 15, and a Jc of 1.6 × 106 A cm-2 at low applied magnetic fields even at 20 K. High quality thick films also have been obtained on metal substrates.

  12. Low dark count geiger mode avalanche photodiodes fabricated in conventional CMOS technologies

    OpenAIRE

    Vilella Figueras, Eva; Arbat Casas, Anna; Alonso Casanovas, Oscar; Comerma Montells, Albert; Trenado, J.; Vilà i Arbonès, Anna Maria; Casanova Mohr, Raimon; Garrido Beltrán, Lluís; Diéguez Barrientos, Àngel

    2011-01-01

    Avalanche photodiodes operated in the Geiger mode present very high intrinsic gain and fast time response, which make the sensor an ideal option for those applications in which detectors with high sensitivity and velocity are required. Moreover, they are compatible with conventional CMOS technologies, allowing sensor and front-end electronics integration within the pixel cell. Despite these excellent qualities, the photodiode suffers from high intrinsic noise, which degrades the performance o...

  13. Rad Tolerant CMOS Image Sensor Based on Hole Collection 4T Pixel Pinned Photodiode

    OpenAIRE

    Place, Sébastien; Carrere, Jean-Pierre; Allegret, Stephane; Magnan, Pierre; Goiffon, Vincent; Roy, François

    2012-01-01

    1.4μm pixel pitch CMOS Image sensors based on hole collection pinned photodiode (HPD) have been irradiated with 60Co source. The HPD sensors exhibit much lower dark current degradation than equivalent commercial sensors using an Electron collection Pinned Photodiode (EPD). This hardness improvement is mainly attributed to carrier accumulation near the interfaces induced by the generated positive charges in dielectrics. The pre-eminence of this image sensor based on hole collection pinned phot...

  14. New alpha particle counter based on micro-pixel avalanche photodiode

    International Nuclear Information System (INIS)

    Full text : The main goal of this work is study of possibility to detect alpha particles with micro-pixel avalanche photodiode which has very thin active volume. The obtained results show that alpha detectors based on the micro-pixel avalanche photodiodes can be used as alpha particle counter in many experiments : public security, radioactive contamination monitoring in various environments and detection of charged particles from nuclear reactions

  15. Soft X-ray detection and photon counting spectroscopy with commercial 4H-SiC Schottky photodiodes

    Science.gov (United States)

    Zhao, S.; Gohil, T.; Lioliou, G.; Barnett, A. M.

    2016-09-01

    The results of electrical characterisation and X-ray detection measurements of two different active area (0.06 mm2 and 0.5 mm2) commercial 4H-SiC Schottky photodiodes at room temperature are reported. The devices exhibited low dark currents (less than 10 pA) even at a high electric field strengths (403 kV/cm for 0.06 mm2 diodes; 227 kV/cm for 0.5 mm2 diodes). The results of the X-ray measurements indicate that the diodes can be used as photon counting spectroscopic X-ray detectors with modest energy resolutions: FWHM at 5.9 keV of 1.8 keV and 3.3 keV, for the 0.06 mm2 and 0.5 mm2 devices, respectively. Noise analysis of the photodiodes coupled to a custom low noise charge sensitive preamplifier is also presented.

  16. Nano-Multiplication-Region Avalanche Photodiodes and Arrays

    Science.gov (United States)

    Zheng, Xinyu; Pain, Bedabrata; Cunningham, Thomas

    2008-01-01

    Nano-multiplication-region avalanche photodiodes (NAPDs), and imaging arrays of NAPDs integrated with complementary metal oxide/semiconductor (CMOS) active-pixel-sensor integrated circuitry, are being developed for applications in which there are requirements for high-sensitivity (including photoncounting) detection and imaging at wavelengths from about 250 to 950 nm. With respect to sensitivity and to such other characteristics as speed, geometric array format, radiation hardness, power demand of associated circuitry, size, weight, and robustness, NAPDs and arrays thereof are expected to be superior to prior photodetectors and arrays including CMOS active-pixel sensors (APSs), charge-coupled devices (CCDs), traditional APDs, and microchannelplate/ CCD combinations. Figure 1 depicts a conceptual NAPD array, integrated with APS circuitry, fabricated on a thick silicon-on-insulator wafer (SOI). Figure 2 presents selected aspects of the structure of a typical single pixel, which would include a metal oxide/semiconductor field-effect transistor (MOSFET) integrated with the NAPD. The NAPDs would reside in silicon islands formed on the buried oxide (BOX) layer of the SOI wafer. The silicon islands would be surrounded by oxide-filled insulation trenches, which, together with the BOX layer, would constitute an oxide embedding structure. There would be two kinds of silicon islands: NAPD islands for the NAPDs and MOSFET islands for in-pixel and global CMOS circuits. Typically, the silicon islands would be made between 5 and 10 m thick, but, if necessary, the thickness could be chosen outside this range. The side walls of the silicon islands would be heavily doped with electron-acceptor impurities (p+-doped) to form anodes for the photodiodes and guard layers for the MOSFETs. A nanoscale reach-through structure at the front (top in the figures) central position of each NAPD island would contain the APD multiplication region. Typically, the reach-through structure would be

  17. Prioritization of strategies for protected area management with local people using the hybrid SWOT-AHP analysis: the case of Kakum conservation area, Ghana

    Directory of Open Access Journals (Sweden)

    Raphael Foli Fiagbomeh

    2015-05-01

    Full Text Available The contribution of protected areas towards conservation and protection of biodiversity cannot be over emphasized. Likewise, the dependence of local communities on forest and natural resources cannot be overlooked. Hence for the long term viability of forest reserves and wildlife protected area, the relationship of local people living close to these areas are of key importance if conflict of use can be mitigated. Admittedly, decision-making with respect to forest resource use and protection are complex due to the multiple interests of the major stakeholders. Stakeholder involvement in the planning, management and policy analysis can help resolve conflicts, and increase the commitment of local people to support conservation of protected areas. In this paper, we employ the SWOT-AHP methodology, with the aid of the Priority Estimation Tool (PriEsT, to evaluate and prioritize three management strategies for the Kakum conservation area in Ghana, as a means to facilitate conservation while ensuring benefits to local people. Considering the management objectives of the conservation area, seventeen SWOT sub-factors were identified and used in rating the three alternative management strategies. Among the strength sub-factors, enforcement of protection regulations (S4 is the most important. Similarly, limited funds for patrolling and outreach programs (W3, local people’s interest in alternative livelihood (O4 and the presence of illegal activities (T3 are the most important weakness, opportunity and threat sub-factors respectively. The management strategy “institute village committees to support monitoring and protection of resources” (A1 has the highest priority rating, indicating that management authorities must pay more attention to collaborative management. We propose that to improve on protected area management in Ghana, more management strategy studies must be conducted. However, these studies may apply the fuzzy AHP technique since it is

  18. Readout circuitry for continuous high-rate photon detection with arrays of InP Geiger-mode avalanche photodiodes

    Science.gov (United States)

    Frechette, Jonathan; Grossmann, Peter J.; Busacker, David E.; Jordy, George J.; Duerr, Erik K.; McIntosh, K. Alexander; Oakley, Douglas C.; Bailey, Robert J.; Ruff, Albert C.; Brattain, Michael A.; Funk, Joseph E.; MacDonald, Jason G.; Verghese, Simon

    2012-06-01

    An asynchronous readout integrated circuit (ROIC) has been developed for hybridization to a 32x32 array of single-photon sensitive avalanche photodiodes (APDs). The asynchronous ROIC is capable of simultaneous detection and readout of photon times of arrival, with no array blind time. Each pixel in the array is independently operated by a finite state machine that actively quenches an APD upon a photon detection event, and re-biases the device into Geiger mode after a programmable hold-off time. While an individual APD is in hold-off mode, other elements in the array are biased and available to detect photons. This approach enables high pixel refresh frequency (PRF), making the device suitable for applications including optical communications and frequency-agile ladar. A built-in electronic shutter that de-biases the whole array allows the detector to operate in a gated mode or allows for detection to be temporarily disabled. On-chip data reduction reduces the high bandwidth requirements of simultaneous detection and readout. Additional features include programmable single-pixel disable, region of interest processing, and programmable output data rates. State-based on-chip clock gating reduces overall power draw. ROIC operation has been demonstrated with hybridized InP APDs sensitive to 1.06-μm and 1.55-μm wavelength, and fully packaged focal plane arrays (FPAs) have been assembled and characterized.

  19. Design of HgCdTe heterojunction photodiodes on Si substrate

    Science.gov (United States)

    Zhang, P.; Ye, Z. H.; Chen, Y. Y.; Lin, C.; Hu, X. N.; Ding, R. J.; He, L.

    2014-05-01

    An innovative heterojunction photodiode structure in HgCdTe-on-Si long-wavelength (LW) infrared focal plane array (IRFPA) detector is investigated in this paper. The quantum efficiency and the photoresponse of devices have been numerically simulated, using Crosslight Technology Computer Aided Design (TCAD) software. Simulation results indicate that in contrast to the p+-on-n homojunction photodiode, the heterojunction photodiode effectively suppresses the crosstalk between adjacent pixels and interface recombination between HgCdTe active region and buffer layer on Si substrate. And in the range of the LW-band, the quantum efficiency of the heterojunction photodiode increases by 35.5%. Furthermore, the heterojunction photodiode acquires the narrow-band response spectrum desired in the application of the LW IRFPA detectors as the p+-on-n homojunction photodiode with the optical filter. Finally, the smaller bulk resistance of its heavily doped N-type layer ensures the uniformity of the pixel series resistance in the large format IRFPAs.

  20. Characterization of midwave infrared InSb avalanche photodiode

    International Nuclear Information System (INIS)

    This paper focuses on the InSb material potential for the elaboration of Avalanche Photodiodes (APD) for high performance infrared imaging applications, both in passive or active mode. The first InSb electron-APD structure was grown by molecular beam epitaxy, processed and electrically characterized. The device performances are at the state of the art for the InSb epi-diode technology, with a dark current density J(−50 mV) = 32 nA/cm2 at 77 K. Then, a pure electron injection was performed, and an avalanche gain, increasing exponentially, was observed with a gain value near 3 at −4 V at 77 K. The Okuto–Crowell model was used to determine the electron ionization coefficient α(E) in InSb, and the InSb gain behavior is compared with the one of InAs and MCT APDs

  1. Interaction of Avalanche Photodiodes (APDs Devices With Thermal Irradiation Environments

    Directory of Open Access Journals (Sweden)

    Ahmed Nabih Zaki Rashed

    2012-04-01

    Full Text Available This paper has been examined the high temperature irradiation variations testing in order to be used to determine avalanche photodiode lifetime, even though APD failure mechanisms are more sensitive to increases in current density. As a measured parameter of degradation, the current density is of great significance when searching for failure modes in APD. Raising the current density however, is not really indicative of lifetime since it is more likely a situation to be avoided than one that simulates normal lifetime degradation. The reliability of semiconductor detectors is very dependent on the degradation modes. This paper has investigated deeply some of the degradation performance and capabilities of typical APDs currently used in many communication and sensing systems over wide range of the affecting parameters. APDs are used in systems that require coherent and often single mode light such as high data rate communications and sensing applications. APDs are an attractive receiver choice for photon-starved (low signal applications, because their internal gain mechanism can improve signal to noise ratio. An optical receiver must also be appropriate for the laser wavelength being used. The near infrared is the preferred wavelength regime for deep space optical communications largely due to the wavelengths of available laser technologies that meet the optical power requirements of a deep space optical link

  2. Characterization of midwave infrared InSb avalanche photodiode

    Energy Technology Data Exchange (ETDEWEB)

    Abautret, J., E-mail: johan.abautret@ies.univ-montp2.fr; Evirgen, A. [Université Montpellier, IES, UMR 5214, F-34095 Montpellier (France); CNRS, IES, UMR 5214, F-34095 Montpellier (France); SOFRADIR, BP 21, 38113 Veurey-Voroize (France); Perez, J. P.; Christol, P. [Université Montpellier, IES, UMR 5214, F-34095 Montpellier (France); CNRS, IES, UMR 5214, F-34095 Montpellier (France); Rothman, J. [CEA-LETI, 17 rue des Martyrs, 38054 Grenoble Cedex 9 (France); Cordat, A. [SOFRADIR, BP 21, 38113 Veurey-Voroize (France)

    2015-06-28

    This paper focuses on the InSb material potential for the elaboration of Avalanche Photodiodes (APD) for high performance infrared imaging applications, both in passive or active mode. The first InSb electron-APD structure was grown by molecular beam epitaxy, processed and electrically characterized. The device performances are at the state of the art for the InSb epi-diode technology, with a dark current density J(−50 mV) = 32 nA/cm{sup 2} at 77 K. Then, a pure electron injection was performed, and an avalanche gain, increasing exponentially, was observed with a gain value near 3 at −4 V at 77 K. The Okuto–Crowell model was used to determine the electron ionization coefficient α(E) in InSb, and the InSb gain behavior is compared with the one of InAs and MCT APDs.

  3. Measurement of Radiation - Light Field Congruence using a Photodiode Array

    Science.gov (United States)

    Balderson, Michael J.

    Improved treatment techniques in radiation therapy provide incentive to reduce treatment margins, thereby increasing the necessity for more accurate geometrical setup of the linear accelerator and accompanying components. In this thesis, we describe the development of a novel device that enables precise and automated measurement of radiation-light field congruence of medical linear accelerators for the purpose of improving setup accuracy, and standardizing repeated quality control activities. The device consists of a silicon photodiode array, an evaluation board, a data acquisition card, and a laptop. Using the device, we show that the radiation-light field congruence for both 6 and 15 MV beams is within 2 mm on a Varian Clinac 21 EX medical linear accelerator. Because measurements are automated, ambiguities resulting from observer variability are removed, greatly improving the reproducibility of measurements over time and across observers. We expect the device to be useful in providing consistent measurements on linear accelerators used for stereotactic radiosurgery, during the commissioning of new linear accelerators, and as an alternative to film or other commercially available devices for performing monthly or annual quality control checks.

  4. ASIC Readout Circuit Architecture for Large Geiger Photodiode Arrays

    Science.gov (United States)

    Vasile, Stefan; Lipson, Jerold

    2012-01-01

    The objective of this work was to develop a new class of readout integrated circuit (ROIC) arrays to be operated with Geiger avalanche photodiode (GPD) arrays, by integrating multiple functions at the pixel level (smart-pixel or active pixel technology) in 250-nm CMOS (complementary metal oxide semiconductor) processes. In order to pack a maximum of functions within a minimum pixel size, the ROIC array is a full, custom application-specific integrated circuit (ASIC) design using a mixed-signal CMOS process with compact primitive layout cells. The ROIC array was processed to allow assembly in bump-bonding technology with photon-counting infrared detector arrays into 3-D imaging cameras (LADAR). The ROIC architecture was designed to work with either common- anode Si GPD arrays or common-cathode InGaAs GPD arrays. The current ROIC pixel design is hardwired prior to processing one of the two GPD array configurations, and it has the provision to allow soft reconfiguration to either array (to be implemented into the next ROIC array generation). The ROIC pixel architecture implements the Geiger avalanche quenching, bias, reset, and time to digital conversion (TDC) functions in full-digital design, and uses time domain over-sampling (vernier) to allow high temporal resolution at low clock rates, increased data yield, and improved utilization of the laser beam.

  5. Continuous Holdup Measurements with Silicon P-I-N Photodiodes

    Energy Technology Data Exchange (ETDEWEB)

    Bell, Z.W.; Oberer, R.B.; Williams, J.A.; Smith, D.E.; Paulus, M.J.

    2002-05-01

    We report on the behavior of silicon P-I-N photodiodes used to perform holdup measurements on plumbing. These detectors differ from traditional scintillation detectors in that no high-voltage is required, no scintillator is used (gamma and X rays are converted directly by the diode), and they are considerably more compact. Although the small size of the diodes means they are not nearly as efficient as scintillation detectors, the diodes' size does mean that a detector module, including one or more diodes, pulse shaping electronics, analog-to-digital converter, embedded microprocessor, and digital interface can be realized in a package (excluding shielding) the size of a pocket calculator. This small size, coupled with only low-voltage power requirement, completely solid-state realization, and internal control functions allows these detectors to be strategically deployed on a permanent basis, thereby reducing or eliminating the need for manual holdup measurements. In this paper, we report on the measurement of gamma and X rays from {sup 235}U and {sup 238}U contained in steel pipe. We describe the features of the spectra, the electronics of the device and show how a network of them may be used to improve estimates of inventory in holdup.

  6. Rapid Genotyping of the Human Renin (REN Gene by the LightCycler® Instrument: Identification of Unexpected Nucleotide Substitutions within the Selected Hybridization Probe Area

    Directory of Open Access Journals (Sweden)

    Line Wee

    2010-01-01

    Full Text Available Preeclampsia is a serious disorder affecting nearly 3% of all in the Western world. It is associated with hypertension and proteinuria, and several lines of evidence suggest that the renin-angiotensin system (RAS may be involved in the development of hypertension at different stages of a preeclamptic pregnancy. In this study, we developed rapid genotyping assays on the LightCycler® instrument to allow the detection of genetic variants in the renin gene (REN that may predispose to preeclampsia. The method is based on real-time PCR and allele-specific hybridization probes, followed by fluorescent melting curve analysis to expose a change in melting temperature (Tm. Ninety-two mother-father-child triads (n=276 from preeclamptic pregnancies were genotyped for three haplotype-tagging single nucleotide polymorphisms (htSNPs in REN. All three htSNPs (rs5705, rs1464816 and rs3795575 were successfully genotyped. Furthermore, two unexpected nucleotide substitutions (rs11571084 and rs61757041 were identified within the selected hybridization probe area of rs1464816 and rs3795575 due to aberrant melting peaks. In conclusion, genotyping on the LightCycler® instrument proved to be rapid and highly reproducible. The ability to uncover additional nucleotide substitutions is particularly important in that it allows the identification of potentially etiological variants that might otherwise be overlooked by other genotyping methods.

  7. Photodiode read-out of the ALICE photon spectrometer $PbWO_{4}$ crystals

    CERN Document Server

    Man'ko, V I; Sibiryak, Yu; Volkov, M; Klovning, A; Maeland, O A; Odland, O H; Rongved, R; Skaali, B

    1999-01-01

    Proposal of abstract for LEB99, Snowmass, Colorado, 20-24 September 1999The PHOton Spectrometer of the ALICE experiment is an electromagnetic calorimeter of high granularity consisting of 17280 lead-tungstate (PWO) crystals of dimensions 22x22x180 mm3, read out by large-area PIN-diodes with very low-noise front-end electronics. The crystal assembly is operated at -25C to increase the PWO light yield. A 16.1x17.1 mm2 photodiode, optimized for the PWO emissio spectrum at 400-500 nm, has been developed. The 20x20 mm2 preamplifier PCB is attached to the back side of the diode ceramic frame. The charge sensitive preamplifier is built in discrete logic with two input JFETs for optimum matching with the ~150pF PIN-diode. A prototype shaper has been designed and built in discrete logic. For a detector matrix of 64 units the measured ENCs are between 450-550e at -25C. Beam tests demonstrate that the required energy resolution is reached.Summary:The PHOton Spectrometer of the ALICE experiment is an electromagnetic calo...

  8. Organic Photodiodes: The Future of Full Color Detection and Image Sensing.

    Science.gov (United States)

    Jansen-van Vuuren, Ross D; Armin, Ardalan; Pandey, Ajay K; Burn, Paul L; Meredith, Paul

    2016-06-01

    Major growth in the image sensor market is largely as a result of the expansion of digital imaging into cameras, whether stand-alone or integrated within smart cellular phones or automotive vehicles. Applications in biomedicine, education, environmental monitoring, optical communications, pharmaceutics and machine vision are also driving the development of imaging technologies. Organic photodiodes (OPDs) are now being investigated for existing imaging technologies, as their properties make them interesting candidates for these applications. OPDs offer cheaper processing methods, devices that are light, flexible and compatible with large (or small) areas, and the ability to tune the photophysical and optoelectronic properties - both at a material and device level. Although the concept of OPDs has been around for some time, it is only relatively recently that significant progress has been made, with their performance now reaching the point that they are beginning to rival their inorganic counterparts in a number of performance criteria including the linear dynamic range, detectivity, and color selectivity. This review covers the progress made in the OPD field, describing their development as well as the challenges and opportunities. PMID:27111541

  9. The evolutionary history of the Arabidopsis lyrata complex: a hybrid in the amphi-Beringian area closes a large distribution gap and builds up a genetic barrier

    Directory of Open Access Journals (Sweden)

    Koch Marcus A

    2010-04-01

    Full Text Available Abstract Background The genomes of higher plants are, on the majority, polyploid, and hybridisation is more frequent in plants than in animals. Both polyploidisation and hybridisation contribute to increased variability within species, and may transfer adaptations between species in a changing environment. Studying these aspects of evolution within a diversified species complex could help to clarify overall spatial and temporal patterns of plant speciation. The Arabidopsis lyrata complex, which is closely related to the model plant Arabidopsis thaliana, is a perennial, outcrossing, herbaceous species complex with a circumpolar distribution in the Northern Hemisphere as well as a disjunct Central European distribution in relictual habitats. This species complex comprises three species and four subspecies, mainly diploids but also several tetraploids, including one natural hybrid. The complex is ecologically, but not fully geographically, separated from members of the closely related species complex of Arabidopsis halleri, and the evolutionary histories of both species compexes have largely been influenced by Pleistocene climate oscillations. Results Using DNA sequence data from the nuclear encoded cytosolic phosphoglucoisomerase and Internal Transcribed Spacers 1 and 2 of the ribosomal DNA, as well as the trnL/F region from the chloroplast genome, we unravelled the phylogeography of the various taxonomic units of the A. lyrata complex. We demonstrate the existence of two major gene pools in Central Europe and Northern America. These two major gene pools are constructed from different taxonomic units. We also confirmed that A. kamchatica is the allotetraploid hybrid between A. lyrata and A. halleri, occupying the amphi-Beringian area in Eastern Asia and Northern America. This species closes the large distribution gap of the various other A. lyrata segregates. Furthermore, we revealed a threefold independent allopolyploid origin of this hybrid

  10. Energy and exergy analyses on a novel hybrid solar heating, cooling and power generation system for remote areas

    International Nuclear Information System (INIS)

    In this study, a small scale hybrid solar heating, chilling and power generation system, including parabolic trough solar collector with cavity receiver, a helical screw expander and silica gel-water adsorption chiller, etc., was proposed and extensively investigated. The system has the merits of effecting the power generation cycle at lower temperature level with solar energy more efficiently and can provide both thermal energy and power for remote off-grid regions. A case study was carried out to evaluate an annual energy and exergy efficiency of the system under the climate of northwestern region of China. It is found that both the main energy and exergy loss take place at the parabolic trough collector, amount to 36.2% and 70.4%, respectively. Also found is that the studied system can have a higher solar energy conversion efficiency than the conventional solar thermal power generation system alone. The energy efficiency can be increased to 58.0% from 10.2%, and the exergy efficiency can be increased to 15.2% from 12.5%. Moreover, the economical analysis in terms of cost and payback period (PP) has been carried out. The study reveals that the proposed system the PP of the proposed system is about 18 years under present energy price conditions. The sensitivity analysis shows that if the interest rate decreases to 3% or energy price increase by 50%, PP will be less than 10 years.

  11. Energy and exergy analyses on a novel hybrid solar heating, cooling and power generation system for remote areas

    International Nuclear Information System (INIS)

    In this study, a small scale hybrid solar heating, chilling and power generation system, including parabolic trough solar collector with cavity receiver, a helical screw expander and silica gel-water adsorption chiller, etc., was proposed and extensively investigated. The system has the merits of effecting the power generation cycle at lower temperature level with solar energy more efficiently and can provide both thermal energy and power for remote off-grid regions. A case study was carried out to evaluate an annual energy and exergy efficiency of the system under the climate of northwestern region of China. It is found that both the main energy and exergy loss take place at the parabolic trough collector, amount to 36.2% and 70.4%, respectively. Also found is that the studied system can have a higher solar energy conversion efficiency than the conventional solar thermal power generation system alone. The energy efficiency can be increased to 58.0% from 10.2%, and the exergy efficiency can be increased to 15.2% from 12.5%. Moreover, the economical analysis in terms of cost and payback period (PP) has been carried out. The study reveals that the proposed system the PP of the proposed system is about 18 years under present energy price conditions. The sensitivity analysis shows that if the interest rate decreases to 3% or energy price increase by 50%, PP will be less than 10 years. (author)

  12. Current-mode CMOS hybrid image sensor

    Science.gov (United States)

    Benyhesan, Mohammad Kassim

    Digital imaging is growing rapidly making Complimentary Metal-Oxide-Semi conductor (CMOS) image sensor-based cameras indispensable in many modern life devices like cell phones, surveillance devices, personal computers, and tablets. For various purposes wireless portable image systems are widely deployed in many indoor and outdoor places such as hospitals, urban areas, streets, highways, forests, mountains, and towers. However, the increased demand on high-resolution image sensors and improved processing features is expected to increase the power consumption of the CMOS sensor-based camera systems. Increased power consumption translates into a reduced battery life-time. The increased power consumption might not be a problem if there is access to a nearby charging station. On the other hand, the problem arises if the image sensor is located in widely spread areas, unfavorable to human intervention, and difficult to reach. Given the limitation of energy sources available for wireless CMOS image sensor, an energy harvesting technique presents a viable solution to extend the sensor life-time. Energy can be harvested from the sun light or the artificial light surrounding the sensor itself. In this thesis, we propose a current-mode CMOS hybrid image sensor capable of energy harvesting and image capture. The proposed sensor is based on a hybrid pixel that can be programmed to perform the task of an image sensor and the task of a solar cell to harvest energy. The basic idea is to design a pixel that can be configured to exploit its internal photodiode to perform two functions: image sensing and energy harvesting. As a proof of concept a 40 x 40 array of hybrid pixels has been designed and fabricated in a standard 0.5 microm CMOS process. Measurement results show that up to 39 microW of power can be harvested from the array under 130 Klux condition with an energy efficiency of 220 nJ /pixel /frame. The proposed image sensor is a current-mode image sensor which has several

  13. Advanced active quenching circuits for single-photon avalanche photodiodes

    Science.gov (United States)

    Stipčević, M.; Christensen, B. G.; Kwiat, P. G.; Gauthier, D. J.

    2016-05-01

    Commercial photon-counting modules, often based on actively quenched solid-state avalanche photodiode sensors, are used in wide variety of applications. Manufacturers characterize their detectors by specifying a small set of parameters, such as detection efficiency, dead time, dark counts rate, afterpulsing probability and single photon arrival time resolution (jitter), however they usually do not specify the conditions under which these parameters are constant or present a sufficient description. In this work, we present an in-depth analysis of the active quenching process and identify intrinsic limitations and engineering challenges. Based on that, we investigate the range of validity of the typical parameters used by two commercial detectors. We identify an additional set of imperfections that must be specified in order to sufficiently characterize the behavior of single-photon counting detectors in realistic applications. The additional imperfections include rate-dependence of the dead time, jitter, detection delay shift, and "twilighting." Also, the temporal distribution of afterpulsing and various artifacts of the electronics are important. We find that these additional non-ideal behaviors can lead to unexpected effects or strong deterioration of the system's performance. Specifically, we discuss implications of these new findings in a few applications in which single-photon detectors play a major role: the security of a quantum cryptographic protocol, the quality of single-photon-based random number generators and a few other applications. Finally, we describe an example of an optimized avalanche quenching circuit for a high-rate quantum key distribution system based on time-bin entangled photons.

  14. Hybrid and electric low-noise cars cause an increase in traffic accidents involving vulnerable road users in urban areas.

    Science.gov (United States)

    Brand, Stephan; Petri, Maximilian; Haas, Philipp; Krettek, Christian; Haasper, Carl

    2013-01-01

    Due to resource scarcity, the number of low-noise and electric cars is expected to increase rapidly. The frequent use of these cars will lead to a significant reduction of traffic related noise and pollution. On the other hand, due to the adaption and conditioning of vulnerable road users the number of traffic accidents involving pedestrians and bicyclists is postulated to increase as well. Children, older people with reduced eyesight and the blind are especially reliant on a combination of acoustic and visual warning signals with approaching or accelerating vehicles. This is even more evident in urban areas where the engine sound is the dominating sound up to 30 kph (kilometres per hour). Above this, tyre-road interaction is the main cause of traffic noise. With the missing typical engine sound a new sound design is necessary to prevent traffic accidents in urban areas. Drivers should not be able to switch the sound generator off. PMID:23083396

  15. A room temperature LSO/PIN photodiode PET detector module that measures depth of interaction

    International Nuclear Information System (INIS)

    The authors present measurements of a 4 element PET detector module that uses a 2 x 2 array of 3 mm square PIN photodiodes to both measure the depth of interaction (DOI) and identify the crystal of interaction. Each photodiode is coupled to one end of a 3 x 3 x 25 mm LSO crystal, with the opposite ends of all 4 crystals attached to a single PMT that provides a timing signal and initial energy discrimination. Each LSO crystal is coated with a ''lossy'' reflector, so the ratio of light detected in the photodiode and PMT depends on the position of interaction in the crystal, and is used to determine this position on an event by event basis. This module is operated at +25 C with a photodiode amplifier peaking time of 2 micros. When excited by a collimated beam of 511 keV photons at the photodiode end of the module (i.e. closest to the patient), the DOI resolution is 4 mm fwhm and the crystal of interaction is identified correctly 95% of the time. When excited at the opposite end of the module, the DOI resolution is 13 mm fwhm and the crystal of interaction is identified correctly 73% of the time. The channel to channel variations in performance are minimal

  16. Gamma-ray spectroscopy using CsI and silicon Pine photodiodes

    Energy Technology Data Exchange (ETDEWEB)

    Jeon, Taehoon; Jeong, Sungyeop; Kwon, Soocheon [Sungwoo E and T, Seoul (Korea, Republic of)

    2010-07-01

    The Finger generally uses two detector modules which are parallel for each other. They are all scintillator coupled photodiode detectors and the thickness of coupled photodiode detectors and the thickness of each scintillator is designed to absorb about 80% of radiations entering the scintillator. In order to acquire more detail information and reduce the error of measuring the ratio, the sensitivity of each detector should be improved. In this study, we proposed a new idea to increase the sensitivity of each detector by using two parallel detector modules for gamma-ray radiography. The aim of this work was to evaluate the ability of the new detector to improve the signal to noise ration, and to establish the methodology for counting in the new detector module with coincidence spectroscopy circuit. For this purpose, we optimized the scintillator thickness for {sup 60}Co by the Monte Carlo simulation code and the characteristics of operation and noise tests were accomplished after Scintillator coupling. We fabricated the Pine photodiode coupled with crystal for the Finger. We performed experiments and analyzed the results concentrating on the characteristics of signal and noise with Pine photodiode and CSR to detect high energy gamma and dominant factors to minimize system noise were capacitance than dark current of photodiode. As a result of measurement using the two parallel detector modules in this study, the sensitivity was considerably improved. We proved that our detector system is reliable for Finger.

  17. 64-element photodiode array for scintillation detection of x-rays

    Science.gov (United States)

    Wegrzecki, Maciej; Wolski, Dariusz; Bar, Jan; Budzyński, Tadeusz; Chłopik, Arkadiusz; Grabiec, Piotr; Kłos, Helena; Panas, Andrzej; Piotrowski, Tadeusz; Słysz, Wojciech; Stolarski, Maciej; Szmigiel, Dariusz; Wegrzecka, Iwona; Zaborowski, Michał

    2014-08-01

    The paper presents the design, technology and parameters of a new, silicon 64-element linear photodiode array developed at the Institute of Electron Technology (ITE) for the detection of scintillations emitted by CsI scintillators (λ≈550 nm). The arrays are used in a device for examining the content of containers at border crossings under development at the National Centre for Nuclear Research. Two arrays connected with a scintillator block (128 CsI scintillators) form a 128-channel detection module. The array consists of 64 epiplanar photodiode structures (5.1 × 7.2 mm) and a 5.3 mm module. p+-ν-n+ photodiode structures are optimised for the detection of radiation of λ≈ 550 nm wavelength with no voltage applied (photovoltaic mode). The structures are mounted on an epoxy-glass laminate substrate, copper-clad on both sides, on which connections with a common anode and separate cathode leads are located. The photosensitive surface of photodiodes is covered with a special silicone gel, which protects photodiodes against the mechanical impact of scintillators

  18. Scintillator counters with multi-pixel avalanche photodiode readout for the ND280 detector of the T2K experiment

    International Nuclear Information System (INIS)

    The Tokai-to-Kamioka (T2K) experiment is a second generation long baseline neutrino oscillation experiment which aims at a sensitive search for νe appearance. The main design features of the T2K near neutrino detectors located at 280m from the target are presented, and the scintillator counters are described. The counters are readout via WLS fibers embedded into S-shaped grooves in the scintillator from both ends by multi-pixel avalanche photodiodes operating in a limited Geiger mode. Operating principles and results of tests of photosensors with a sensitive area of 1mm2 are presented. A time resolution of 1.75ns, a spatial resolution of 9.9-12.4cm, and a detection efficiency for minimum ionizing particles of more than 99% were obtained for scintillator detectors in a beam test

  19. Study of avalanche photodiodes for soft X-ray detection below 20keV

    International Nuclear Information System (INIS)

    The performance of the large area reach-through avalanche photodiode (APD), manufactured by Hamamatsu Photonics, K.K. as a high resolution X-ray detector is presented. The mentioned APD has an area of 3mm, a fast time response for signal carrier collection and its thick depletion layer of 130μm shows a potential to be used as an effective X-ray absorber below 20keV. Having a capacitance of ∼10pF and a low dark current of 5nA for a gain of 15, at room temperature, this APD had demonstrated one of the best energy resolutions within this kind of devices: 6.4% (FWHM) for 5.9keV photons with a minimum detectable energy of 0.3keV, measured at -20 deg. C. The experiments for the timing property were made in a synchrotron beam facility using an 8keV X-ray beam; the reached count rate was above 108 counts/s, corresponding to a very short dead time of 4.5ns/pulse. In order to test the radiation hardness of the APD, the device was irradiated at a Ring Cyclotron Facility with a 53.5MeV proton beam. The total dose was of 11.3krad and no fatal damage was found in the APD, although the dark current of the APD had shown an increase of one order of magnitude. Finally, the obtained results allow us to affirm that the reach-through APD has the potential to become an excellent X-ray detector, especially in the space mission application

  20. Study of avalanche photodiodes for soft X-ray detection below 20 keV

    Science.gov (United States)

    Yatsu, Y.; Kuramoto, Y.; Kataoka, J.; Kotoku, J.; Saito, T.; Ikagawa, T.; Sato, R.; Kawai, N.; Kishimoto, S.; Mori, K.; Kamae, T.; Ishikawa, Y.; Kawabata, N.

    2006-08-01

    The performance of the large area reach-through avalanche photodiode (APD), manufactured by Hamamatsu Photonics, K.K. as a high resolution X-ray detector is presented. The mentioned APD has an area of 3 mm ∅, a fast time response for signal carrier collection and its thick depletion layer of 130 μm shows a potential to be used as an effective X-ray absorber below 20 keV. Having a capacitance of ˜10 pF and a low dark current of 5 nA for a gain of 15, at room temperature, this APD had demonstrated one of the best energy resolutions within this kind of devices: 6.4% (FWHM) for 5.9 keV photons with a minimum detectable energy of 0.3 keV, measured at -20C. The experiments for the timing property were made in a synchrotron beam facility using an 8 keV X-ray beam; the reached count rate was above 108 counts/s, corresponding to a very short dead time of 4.5 ns/pulse. In order to test the radiation hardness of the APD, the device was irradiated at a Ring Cyclotron Facility with a 53.5 MeV proton beam. The total dose was of 11.3 krad and no fatal damage was found in the APD, although the dark current of the APD had shown an increase of one order of magnitude. Finally, the obtained results allow us to affirm that the reach-through APD has the potential to become an excellent X-ray detector, especially in the space mission application.

  1. High quality MgB2 thick films and large-area films fabricated by hybrid physical-chemical vapor deposition with a pocket heater

    International Nuclear Information System (INIS)

    A hybrid physical-chemical vapor deposition process using a pocket heater was developed for the growth of high quality epitaxial large-area MgB2 thin films and c-axis textured MgB2 thick films. This technique is able to independently control the substrate and Mg source temperatures and maintain sufficient Mg overpressure to ensure phase stability. The two-inch large-area MgB2 thin films showed uniform superconducting properties with the superconducting transition temperature Tc of about 40 K, residual resistivity ratio (RRR) of about 10, and critical current density Jc of about 107 A cm-2 (0 T, 5 K). The thick films (∼10 μm) on sapphire substrates showed a maximum Tc of 40 K and RRR of 15, and a Jc of 1.6 x 106 A cm-2 at low applied magnetic fields even at 20 K. High quality thick films also have been obtained on metal substrates

  2. High quality MgB{sub 2} thick films and large-area films fabricated by hybrid physical-chemical vapor deposition with a pocket heater

    Energy Technology Data Exchange (ETDEWEB)

    Wang, S F; Chen, Ke; Li, Qi; Xi, X X [Department of Physics, Pennsylvania State University, University Park, PA 16802 (United States); Lee, C-H; Soukiassian, A; DeFrain, R; Redwing, J M; Schlom, D G [Department of Materials Science and Engineering, Pennsylvania State University, University Park, PA 16802 (United States); Lamborn, D R [Department of Chemical Engineering, Pennsylvania State University, University Park, PA 16802 (United States)], E-mail: suw16@psu.edu

    2008-08-15

    A hybrid physical-chemical vapor deposition process using a pocket heater was developed for the growth of high quality epitaxial large-area MgB{sub 2} thin films and c-axis textured MgB{sub 2} thick films. This technique is able to independently control the substrate and Mg source temperatures and maintain sufficient Mg overpressure to ensure phase stability. The two-inch large-area MgB{sub 2} thin films showed uniform superconducting properties with the superconducting transition temperature T{sub c} of about 40 K, residual resistivity ratio (RRR) of about 10, and critical current density J{sub c} of about 10{sup 7} A cm{sup -2} (0 T, 5 K). The thick films ({approx}10 {mu}m) on sapphire substrates showed a maximum T{sub c} of 40 K and RRR of 15, and a J{sub c} of 1.6 x 10{sup 6} A cm{sup -2} at low applied magnetic fields even at 20 K. High quality thick films also have been obtained on metal substrates.

  3. Comparative Tests of Temperature Effects on the Performance of Gan and Sic Photodiodes

    Directory of Open Access Journals (Sweden)

    Ćwirko Joanna

    2015-03-01

    Full Text Available The paper presents a study of the performance of some selected UV detectors. Unlike many similar works, the obtained data refer to commercial photodiodes (not only to detector materials. The main task of the research was to determine the influence of the operating temperature and annealing on the detector spectral responsiveness. A comparison of the results obtained for the photodiodes made of GaN and SiC was also performed. Although both kinds of detectors can work at high temperatures for a long time, some modification of their properties was observed. However, for GaN and SiC photodiodes, this modification has a substantially different nature. It is very important for some applications, e.g. fire alarms and a military equipment.

  4. Reverse current reduction of Ge photodiodes on Si without post-growth annealing Invited Paper

    Institute of Scientific and Technical Information of China (English)

    Sungbong Park; Shinya Takita; Yasuhiko; Ishikawa; Jiro Osaka; Kazumi Wada

    2009-01-01

    A new approach to reduce the reverse current of Ge pin photodiodes on Si is presented, in which an i-Si layer is inserted between Ge and top Si layers to reduce the electric field in the Ge layer. Without post- growth annealing, the reverse current density is reduced to ~10 mA/cm2 at -1 V, i.e., over one order of magnitude lower than that of the reference photodiode without i-Si layer. However, the responsivity of the photodiodes is not severely compromised. This lowered-reverse-current is explained by band-pinning at the i-Si/i-Ge interface. Barrier lowering mechanism induced by E-field is also discussed. The presented "non-thermal" approach to reduce reverse current should accelerate electronics-photonics convergence by using Ge on the Si complementary metal oxide semiconductor (CMOS) platform.

  5. Indium phosphide-based monolithically integrated PIN waveguide photodiode readout for resonant cantilever sensors

    International Nuclear Information System (INIS)

    An integrated photodiode displacement readout scheme for a microelectromechanical cantilever waveguide resonator sensing platform is presented. III-V semiconductors are used to enable the monolithic integration of passive waveguides with active optical components. This work builds upon previously demonstrated results by measuring the displacement of cantilever waveguide resonators with on-chip waveguide PIN photodiodes. The on-chip integration of the readout provides an additional 70% improvement in mass sensitivity compared to off-chip photodetector designs due to measurement stability and minimized coupling loss. In addition to increased measurement stability, reduced packaging complexity is achieved due to the simplicity of the readout design. We have fabricated cantilever waveguides with integrated photodetectors and experimentally characterized these cantilever sensors with monolithically integrated PIN photodiodes.

  6. Study of commercial Si-PIN photodiode as an x-ray detector

    International Nuclear Information System (INIS)

    Two commercial Si-PIN photodiode were evaluated as a low cost X-ray detector in conjunction with forward biased FET preamplifiers. Evaluation was done at room temperature and at a temperature of about -10degC using X-ray spectroscopy amplifier with 241Am radio active source. The results shows 700 eV full width at half maximum for 241Am γ-ray (59.5 keV) with S5821-02 from Hamamatsu Photonics at low temperature and 800 eV with S1722-02 at the same conditions. The S1722-02 photodiode showed almost flat response up to 20 keV X-ray energy. The improvement of photodiode and FET cooling system and proper selection of FET will be expected to show better resolution. (author)

  7. Studies Supporting PMT Characterization for the IceCube Collaboration: Precise Photodiode Calibration

    CERN Document Server

    Van De Pontseele, Wouter

    2015-01-01

    A laboratory set-up has been developed to more precisely measure the DOM optical sensitivity as a function of angle and wavelength. DOMs are calibrated in water using a broad beam of light whose intensity is measured with a NIST calibrated photodiode. This study will refine the current knowledge of the IceCube response and lay a foundation for future precision upgrades to the detector. Good understanding of the photodiode readout is indispensable for the DOM calibration. Corrections to the photodiode measurements due to the amplifier circuit were investigated. To accomplish this, a general software structure has been added to the existing framework. Because the set of parameters in the source sector is still growing, modularity and a high level of automation were important objectives. The software features a large array of graphical tools to intercept problems at low level while the analysis can be easily adapted to the needs of foreseeable situations.

  8. Fast, Deep-Record-Length, Fiber-Coupled Photodiode Imaging Array for Plasma Diagnostics

    Science.gov (United States)

    Brockington, Samuel; Case, Andrew; Witherspoon, F. Douglas

    2015-11-01

    HyperV Technologies has been developing an imaging diagnostic comprised of an array of fast, low-cost, long-record-length, fiber-optically-coupled photodiode channels to investigate plasma dynamics and other fast, bright events. By coupling an imaging fiber bundle to a bank of amplified photodiode channels, imagers and streak imagers can be constructed. By interfacing analog photodiode systems directly to commercial analog-to-digital converters and modern memory chips, a scalable solution for 100 to 1000 pixel systems with 14 bit resolution and record-lengths of 128k frames has been developed. HyperV is applying these techniques to construct a prototype 1000 Pixel framing camera with up to 100 Msamples/sec rate and 10 to 14 bit depth. Preliminary experimental results as well as future plans will be discussed. Work supported by USDOE Phase 2 SBIR Grant DE-SC0009492.

  9. A 10MHz Fiber-Coupled Photodiode Imaging Array for Plasma Diagnostics

    Science.gov (United States)

    Brockington, Samuel; Case, Andrew; Witherspoon, F. Douglas

    2013-10-01

    HyperV Technologies has been developing an imaging diagnostic comprised of arrays of fast, low-cost, long-record-length, fiber-optically-coupled photodiode channels to investigate plasma dynamics and other fast, bright events. By coupling an imaging fiber bundle to a bank of amplified photodiode channels, imagers and streak imagers of 100 to 10,000 pixels can be constructed. By interfacing analog photodiode systems directly to commercial analog to digital convertors and modern memory chips, a prototype pixel with an extremely deep record length (128 k points at 40 Msamples/s) has been achieved for a 10 bit resolution system with signal bandwidths of at least 10 MHz. Progress on a prototype 100 Pixel streak camera employing this technique is discussed along with preliminary experimental results and plans for a 10,000 pixel imager. Work supported by USDOE Phase 1 SBIR Grant DE-SC0009492.

  10. Photoelectric conversion characteristics of c-Se-based thin-film photodiodes in imaging device

    Science.gov (United States)

    Imura, S.; Kikuchi, K.; Miyakawa, K.; Ohtake, H.; Kubota, M.

    2015-06-01

    Herein, we report the use of high-efficiency crystalline-selenium-based (c-Se-based) thin-film heterojunction photodiodes in imaging devices. As a novel experiment, we use an image pickup tube with a photoelectric conversion layer consisting of n-gallium oxide (Ga2O3)/p-c-Se heterojunction photodiodes to obtain high-resolution images at a relatively low applied voltage. We reduce the thickness of the Ga2O3 layer to expand the depletion layer into the c-Se layer at a lower applied voltage. In addition, Sn-doping of the Ga2O3 layer effectively increases the carrier concentration, thereby allowing the photodiode to operate at lower voltage.

  11. Design studies for a PET detector module using a PIN photodiode to measure depth of interaction

    International Nuclear Information System (INIS)

    The authors present design studies of a multi-layer PET detector module that uses an 8x8 array of 3 mm square PIN photodiodes to both identify the crystal of interaction and measure the depth of interaction. Each photodiodes coupled to one end of a 3x3x30 mm BGO crystal, with the opposite ends of 64 such crystals attached to a single 1 inch square photomultiplier tube that provides a timing signal and energy discrimination. Each BGO crystal is coated with a lossy reflector, so the ratio of light detected in the photodiode and photomultiplier tube depends on the interaction depth in the crystal, and is used to determine this depth of interaction on an event by event basis. A test module with one 3x3x30 mm BGO crystal, one 3 mm square PIN photodiode, and one photomultiplier tube is operated at -20 C with an amplifier peaking time of 4 μs, and a depth of interaction resolution of 5 to 8 mm fwhm measured. Simulations predict that this virtually eliminates radial elongation in a 60 cm diameter BGO tomograph. The photodiode signal corresponding to 511 keV energy deposit varies linearly with excitation position, ranging from 1,250 electrons (e-) at the end closest to the photodiode to 520 e- at the opposite end. The electronic noise is a position independent 330 e- fwhm, so the signal to noise ratio is sufficient to reliably identify the crystal of interaction in a 64 element module

  12. Application of PIN photodiodes on the detection of X-rays generated in an electron accelerator

    International Nuclear Information System (INIS)

    PIN photodiodes are used in a novel application for the determination, within the energy range from 90 to 485 keV, of the intensity of X-rays generated by an experimental electron accelerator. An easily assembled X-ray monitor has been built with a low-cost PIN photodiode and operational amplifiers. The output voltage signal obtained from this device can be related to the electron beam current and the accelerating voltage of the accelerator in order to estimate the dose rate delivered by bremsstrahlung.

  13. Impact des états de gap sur les performances des photodiodes organiques

    OpenAIRE

    Bouthinon, Benjamin,

    2014-01-01

    Produites sur des substrats de grande dimension grâce aux technologies d'impression, les photodiodes organiques suscitent un intérêt grandissant pour leurs applications prometteuses dans le domaine de l'imagerie médicale, des interfaces hommes-machines et les grands instruments. Ces photodiodes (dont les performances tendent à concurrencer celles en silicium amorphe), présentent de nombreux avantages : simplicité du procédé d'impression, faible coût d'investissement, souplesse du substrat et ...

  14. Development of Fuses for Protection of Geiger-Mode Avalanche Photodiode Arrays

    Science.gov (United States)

    Grzesik, Michael; Bailey, Robert; Mahan, Joe; Ampe, Jim

    2015-11-01

    Current-limiting fuses composed of Ti/Al/Ni were developed for use in Geiger-mode avalanche photodiode arrays for each individual pixel in the array. The fuses were designed to burn out at ˜4.5 × 10-3 A and maintain post-burnout leakage currents less than 10-7 A at 70 V sustained for several minutes. Experimental fuse data are presented and successful incorporation of the fuses into a 256 × 64 pixel InP-based Geiger-mode avalanche photodiode array is reported.

  15. A near infrared organic photodiode with gain at low bias voltage

    Energy Technology Data Exchange (ETDEWEB)

    Campbell, Ian H [Los Alamos National Laboratory; Crone, Brian K [Los Alamos National Laboratory

    2009-01-01

    We demonstrate an organic photodiode with near infrared optical response out to about 1100 run with a gain of {approx}10 at 1000 run under 5V reverse bias. The diodes employ a soluble naphthalocyanine with a peak absorption coefficient of {approx}10{sup 5} cm{sup -1} at 1000 nm. In contrast to most organic photodiodes, no exciton dissociating material is used. At zero bias, the diodes are inefficient with an external quantum efficiency of {approx} 10{sup -2}. In reverse bias, large gain occurs and is linear with bias voltage above 4V. The observed gain is consistent with a photoconductive gain mechanism.

  16. Ultra compact 45 GHz CMOS compatible Germanium waveguide photodiode with low dark current.

    Science.gov (United States)

    DeRose, Christopher T; Trotter, Douglas C; Zortman, William A; Starbuck, Andrew L; Fisher, Moz; Watts, Michael R; Davids, Paul S

    2011-12-01

    We present a compact 1.3 × 4 μm2 Germanium waveguide photodiode, integrated in a CMOS compatible silicon photonics process flow. This photodiode has a best-in-class 3 dB cutoff frequency of 45 GHz, responsivity of 0.8 A/W and dark current of 3 nA. The low intrinsic capacitance of this device may enable the elimination of transimpedance amplifiers in future optical data communication receivers, creating ultra low power consumption optical communications. PMID:22273883

  17. Scintillator detectors with long WLS fibers and multi-pixel photodiodes

    CERN Document Server

    Mineev, O; Musienko, Yu; Polyansky, I; Yershov, N

    2011-01-01

    We have studied the possibility of using Geiger mode multi-pixel photodiodes to read out long scintillator bars with a single wavelength-shifting fiber embedded along the bar. This detector configuration can be used in large volume detectors in future long baseline neutrino oscillation experiments. Prototype bars of 0.7 cm thickness and different widths have been produced and tested using two types of multi-pixel photodiodes: MRS APD (CPTA, Moscow) and MPPC (Hamamatsu). A minimum light yield of 7.2 p.e./MeV was obtained for a 4 cm wide bar.

  18. Comparative Study of Gamma Radiation Effects on Solar Cells, Photodiodes, and Phototransistors

    Directory of Open Access Journals (Sweden)

    Dejan Nikolić

    2013-01-01

    Full Text Available This paper presents the behavior of various optoelectronic devices after gamma irradiation. A number of PIN photodiodes, phototransistors, and solar panels have been exposed to gamma irradiation. Several types of photodiodes and phototransistors were used in the experiment. I-V characteristics (current dependance on voltage of these devices have been measured before and after irradiation. The process of annealing has also been observed. A comparative analysis of measurement results has been performed in order to determine the reliability of optoelectronic devices in radiation environments.

  19. A ZnS-Si hetero-junction photodiode for short wavelength photon detection

    International Nuclear Information System (INIS)

    In this work, we have developed a Zinc sulfide-Silicon (ZnS-Si) hetero-junction photodiode structure that has very high quantum efficiency for photons of wavelength in the region from 340 to 800 nm. This structure is suitable for scintillating crystals used in particle physics experiments, emit light in the wavelength region of 400-550 nm. The signal generation process has been performed in a well-defined device geometry by a Monte Carlo simulation code written in Fortran. Based on this work, we offer a new photodiode structure for scintillation lights detection

  20. 3D integration of Geiger-mode avalanche photodiodes aimed to very high fill-factor pixels for future linear colliders

    International Nuclear Information System (INIS)

    This paper presents an analysis of the maximum achievable fill-factor by a pixel detector of Geiger-mode avalanche photodiodes with the Chartered 130 nm/Tezzaron 3D process. The analysis shows that fill-factors between 66% and 96% can be obtained with different array architectures and a time-gated readout circuit of minimum area. The maximum fill-factor is achieved when the two-layer vertical stack is used to overlap the non-sensitive areas of one layer with the sensitive areas of the other one. Moreover, different sensor areas are used to further increase the fill-factor. A chip containing a pixel detector of the Geiger-mode avalanche photodiodes and aimed to future linear colliders has been designed with the Chartered 130 nm/Tezzaron 3D process to increase the fill-factor. -- Highlights: •GAPD pixel detectors present a low detection efficiency due to a reduced fill-factor. •3D-ICs are proposed as a solution to increase the fill-factor of GAPD detectors. •The maximum achievable fill-factor by a GAPD detector in a 3D-IC process is analyzed. •Fill-factors between 66% and 96% can be obtained with different array architectures. •The array is operated in a time-gated mode to reduce the expected sensor noise

  1. Dark Current Reduction of P3HT-Based Organic Photodiode Using a Ytterbium Fluoride Buffer Layer in Electron Transport

    CERN Document Server

    Lim, Seong Bin; Kim, Ki Tae; Oh, Se Young

    2016-01-01

    Photodiodes are widely used to convert lights into electrical signals. The conventional silicon (Si) based photodiodes boast high photoelectric conversion efficiency and detectivity. However, in general, inorganic-based photodiodes have low visible wavelength sensitivity due to their infrared wavelength absorption. Recently, electrical conducting polymer-based photodiodes have received significant attention due to their flexibility, low cost of production and high sensitivity of visible wavelength ranges. In the present work, we fabricated an organic photodiode (OPD) consisting of ITO/ NiOx/ P3HT:PC60BM/ YbF3/ Al. In the OPD, a yitterbium fluoride (YbF3) buffer layer was used as the electron transport layer. The OPD was analyzed for its optical-electrical measurements, including J-V characteristics, detectivity and dynamic characteristics. We have investigated the physical effects of the YbF3 buffer layer on the performance of OPD such as its carrier extraction, leakage current and ohmic characteristics.

  2. Hybrid photodetector for single-molecule spectroscopy and microscopy

    Science.gov (United States)

    Michalet, X.; Cheng, Adrian; Antelman, Joshua; Suyama, Motohiro; Arisaka, Katsushi; Weiss, Shimon

    2008-02-01

    We report benchmark tests of a new single-photon counting detector based on a GaAsP photocathode and an electron-bombarded avalanche photodiode developed by Hamamatsu Photonics. We compare its performance with those of standard Geiger-mode avalanche photodiodes. We show its advantages for FCS due to the absence of after-pulsing and for fluorescence lifetime measurements due to its excellent time resolution. Its large sensitive area also greatly simplifies setup alignment. Its spectral sensitivity being similar to that of recently introduced CMOS SPADs, this new detector could become a valuable tool for single-molecule fluorescence measurements, as well as for many other applications.

  3. Study on hybrid ground-coupled heat pump system for air-conditioning in hot-weather areas like Hong Kong

    International Nuclear Information System (INIS)

    The ground-coupled heat pump (GCHP) system is becoming attractive for air-conditioning in some moderate-weather regions due to its high energy efficiency and reliable operation capability. However, when the technology is used in buildings where there is only cooling load in hot-weather areas like Hong Kong, the heat rejected into the ground by the GCHP systems will accumulate around the ground heat exchangers (GHE). This heat accumulation will result in degradation of system performance and increment of system operating costs. This problem can be resolved by using the hybrid ground-coupled heat pump (HGCHP) system, which uses supplemental heat rejecters to reject the accumulated heat. This paper presents a practical hourly simulation model of the HGCHP system by modeling the heat transfer process of the system's main components. The computer program based on this hourly simulation model can be used to calculate the hour-by-hour operation data of the HGCHP system. As a case study, both a HGCHP system and a traditional GCHP system are designed for a hypothetic private residential building located in Hong Kong, and the economic comparisons are conducted between these two types of systems. The simulation results show that the HGCHP system can effectively solve the heat accumulation problem and reduce both the initial costs and operating costs of the air-conditioning system in the building.

  4. A Rule-Based Energy Management Strategy for a Plug-in Hybrid School Bus Based on a Controller Area Network Bus

    Directory of Open Access Journals (Sweden)

    Jiankun Peng

    2015-06-01

    Full Text Available This paper presents a rule-based energy management strategy for a plug-in hybrid school bus (PHSB. In order to verify the effectiveness and rationality of the proposed energy management strategy, the powertrain and control models were built with MATLAB/Simulink. The PHSB powertrain model includes an engine model, ISG (integrated started and generator model, drive motor model, power battery packs model, driver model, and vehicle longitudinal dynamics model. To evaluate the controller area network (CAN bus performance features such as the bus load, signal hysteresis, and to verify the reliability and real-time performance of the CAN bus multi-node control method, a co-simulation platform was built with CANoe and MATLAB/Simulink. The co-simulation results show that the control strategy can meet the requirements of the PHSB’s dynamic performance. Meanwhile, the charge-depleting mode (CD and charge-sustaining mode (CS can switch between each other and maintain a state-of-charge (SoC of around 30%, indicating that the energy management strategy effectively extends the working period of the CD mode and improves the fuel economy further. The energy consumption per 100 km includes 13.7 L diesel and 10.5 kW·h electricity with an initial SoC of 75%. The CANoe simulation results show that the bus communication performs well without error frames.

  5. Optimization and Analysis of a Hybrid Energy Storage System in a Small-Scale Standalone Microgrid for Remote Area Power Supply (RAPS

    Directory of Open Access Journals (Sweden)

    Fengbing Li

    2015-05-01

    Full Text Available The analysis and application of hybrid energy storage systems (HESSs in small-scale standalone microgrids for remote area power supply (RAPS has received extensive attention. This application mode has its own characteristics which must be considered but have not been considered in the existing research. To reflect the common satisfaction of load demands and maximize the utilization of renewable energy in a standalone microgrid, a new index named effective rate of energy storage system (ESS is proposed. To reflect the true work state of supercapacitor ESS (SC-ESS, the second-level data of field measurements is used in calculation and analysis. To further enhance the operational performance of the HESS, a coordinated control strategy based on state cooperation is adopted. To get a more reasonable and more credible HESS optimization model, the comparison of existing models and proposed model with different considerations on cost and life is provided. In addition, a comparative analysis of technical and economic characteristics improvements is presented for different ESS application schemes in practical projects.

  6. In situ hybridization on the change of m1 receptor mRNA in different brain areas of aged rats and the effect of Yin tonic Zhimu studied

    International Nuclear Information System (INIS)

    The change of gene expression of m1 receptors in different brain areas of aged rats and the effects of water extract of the Yin tonic Zhimu and its active principle ZMS was studied. In situ hybridization using 35S-labelled m1 and m2 probes and analysis of the autoradiographs using a computerized image-analyzer was selected. The grain density of m1 mRNA in striatum was significantly lowered in old rats as compared with young rats (decreased by 12.26 +- 3.60, P<0.01). Long-term oral administration of ZMS, the active principle of Yin tonic Zhimu but not the water extraction of Zhimu, elevated the m1 mRNA in striatum of aged rats (increased by 15.71 +- 3.27, P<0.01). Neither significant change of the grain density of m1 mRNA in old rats nor significant effect of Zhimu or ZMS was observed in cerebral cortex and hippocampus. The m1 mRNA level in striatum is decreased in aged rats and ZMS is able to elevate it

  7. Elimination or minimisation of optoelectronic crosstalk between photodiodes and electronic devices in OEIC on Si

    NARCIS (Netherlands)

    Zhou, M.-J.; Holleman, J.; Wallinga, H.

    1994-01-01

    The optoelectronic crosstalk between photodiodes and electronic devices is observed and investigated in OEICs based on silicon. Results show that the phenomenon is closely related to the diffusion of minority carriers, generated by photon absorption. The crosstalk can be eliminated or minimised by e

  8. Behavioral electromagnetic models of high‐speed p‐i‐n photodiodes

    DEFF Research Database (Denmark)

    Jiang, Chenhui; Krozer, Viktor; Johansen, Tom Keinicke;

    2011-01-01

    This article presents a methodology for developing small‐signal behavioral electromagnetic (EM) models of p‐i‐n photodiodes (PDs) for high‐speed applications. The EM model includes RC bandwidth limitation effect and transit‐time effect. The model is capable of accurately modeling arbitrary complex...

  9. Photoionization of Trapped Carriers in Avalanche Photodiodes to Reduce Afterpulsing During Geiger-Mode Photon Counting

    Science.gov (United States)

    Krainak, Michael A.

    2005-01-01

    We reduced the afterpulsing probability by a factor of five in a Geiger-mode photon-counting InGaAs avalanche photodiode by using sub-band-gap (lambda = 1.95 micron) laser diode illumination, which we believe photoionizes the trapped carriers.

  10. Geiger-Mode Avalanche Photodiode Arrays Integrated to All-Digital CMOS Circuits

    OpenAIRE

    Brian Aull

    2016-01-01

    This article reviews MIT Lincoln Laboratory's work over the past 20 years to develop photon-sensitive image sensors based on arrays of silicon Geiger-mode avalanche photodiodes. Integration of these detectors to all-digital CMOS readout circuits enable exquisitely sensitive solid-state imagers for lidar, wavefront sensing, and passive imaging.

  11. Geiger-Mode Avalanche Photodiode Arrays Integrated to All-Digital CMOS Circuits

    Science.gov (United States)

    Aull, Brian

    2016-01-01

    This article reviews MIT Lincoln Laboratory's work over the past 20 years to develop photon-sensitive image sensors based on arrays of silicon Geiger-mode avalanche photodiodes. Integration of these detectors to all-digital CMOS readout circuits enable exquisitely sensitive solid-state imagers for lidar, wavefront sensing, and passive imaging. PMID:27070609

  12. Experimental analysis of a novel and low-cost pin photodiode dosimetry system for diagnostic radiology

    Science.gov (United States)

    Nazififard, Mohammad; Suh, Kune Y.; Mahmoudieh, Afshin

    2016-07-01

    Silicon PIN photodiode has recently found broad and exciting applications in the ionizing radiation dosimetry. In this study a compact and novel dosimetry system using a commercially available PIN photodiode (BPW34) has been experimentally tested for diagnostic radiology. The system was evaluated with clinical beams routinely used for diagnostic radiology and calibrated using a secondary reference standard. Measured dose with PIN photodiode (Air Kerma) varied from 10 to 430 μGy for tube voltages from 40 to 100 kVp and tube current from 0.4 to 40 mAs. The minimum detectable organ dose was estimated to be 10 μGy with 20% uncertainty. Results showed a linear correlation between the PIN photodiode readout and dose measured with standard dosimeters spanning doses received. The present dosimetry system having advantages of suitable sensitivity with immediate readout of dose values, low cost, and portability could be used as an alternative to passive dosimetry system such as thermoluminescent dosimeter for dose measurements in diagnostic radiology.

  13. HPLC-photodiode array detection analysis of curcuminoids in Curcuma species indigenous to Indonesia

    NARCIS (Netherlands)

    Bos, Rein; Windono, Tri; Woerdenbag, Herman J.; Boersma, Ykelien L.; Koulman, Albert; Kayser, Oliver

    2007-01-01

    An optimized HPLC method with photodiode array detection was developed and applied to analyse the curcuminoids curcumin, demethoxycurcumin, and bis-demethoxycurcumin in rhizomes of Curcuma mangga Val &. v. Zijp, C. heyneana Val. & v. Zijp, C. aeruginosa Roxb. and C. soloensis Val. (Zingiberaceae), i

  14. Scintillation light read-out by thin photodiodes in silicon wells

    CERN Document Server

    Allier, C P; Sarro, P M; Eijk, C W E

    2000-01-01

    Several applications of X-ray and gamma ray imaging detectors, e.g. in medical diagnostics, require millimeter or sub-millimeter spatial resolution and good energy resolution. In order to achieve such features we have proposed a new type of camera, which takes advantage of micromachining technology. It consists of an array of scintillator crystals encapsulated in silicon wells with photodiodes at the bottom. Several parameters of the photodiode need to be optimised: uniformity and efficiency of the light detection, gain, electronic noise and breakdown voltage. In order to evaluate these parameters we have processed 3x3 arrays of 1.8 mm sup 2 , approx 10 mu m thick photodiodes using (1 0 0) wafers etched in a KOH solution. Their optical response at 675 nm wavelength is comparable to that of a 500 mu m thick silicon PIN diode. Their low light detection efficiency is compensated by internal amplification. Several scintillator materials have been positioned in the wells on top of the thin photodiodes, i.e. a 200 ...

  15. On The Pixel Level Estimation of Pinning Voltage, Pinned Photodiode Capacitance and Transfer Gate Channel Potential

    OpenAIRE

    Goiffon, Vincent; Michelot, Julien; Magnan, Pierre; Estribeau, Magali; Marcelot, Olivier; Cervantes, Paola; Pelamatti, Alice; Martin-Gonthier, Philippe

    2013-01-01

    The pinning voltage extraction method proposed by Tan et al. is analyzed to clarify its benefits and limitations. It is demonstrated that this simple measurement can bring much more useful information than the pinning voltage, such as the pinned photodiode capacitance and the transfer gate channel potential. Objective criteria to compare the pinning voltage on different devices are also discussed.

  16. Geiger-Mode Avalanche Photodiode Arrays Integrated to All-Digital CMOS Circuits.

    Science.gov (United States)

    Aull, Brian

    2016-01-01

    This article reviews MIT Lincoln Laboratory's work over the past 20 years to develop photon-sensitive image sensors based on arrays of silicon Geiger-mode avalanche photodiodes. Integration of these detectors to all-digital CMOS readout circuits enable exquisitely sensitive solid-state imagers for lidar, wavefront sensing, and passive imaging. PMID:27070609

  17. Investigation of dark current random telegraph signal in pinned photodiode CMOS image sensors

    OpenAIRE

    Goiffon, Vincent; Virmontois, Cédric; Magnan, Pierre

    2011-01-01

    The characteristics of Dark Current Random Telegraph Signal (DC-RTS), observed in Pinned PhotoDiode (PPD) CMOS Image Sensors (CIS), are investigated thanks to a dedicated analysis tool. Our results demonstrate, for the first time in PPD CIS, that this DC-RTS is due to meta-stable oxide interface SRH generation centers located in the transfer gate depletion region.

  18. Geiger-Mode Avalanche Photodiode Arrays Integrated to All-Digital CMOS Circuits

    Directory of Open Access Journals (Sweden)

    Brian Aull

    2016-04-01

    Full Text Available This article reviews MIT Lincoln Laboratory's work over the past 20 years to develop photon-sensitive image sensors based on arrays of silicon Geiger-mode avalanche photodiodes. Integration of these detectors to all-digital CMOS readout circuits enable exquisitely sensitive solid-state imagers for lidar, wavefront sensing, and passive imaging.

  19. Fabrication and performance of intrinsic germanium photodiodes. [for atmospheric IR spectroscopy

    Science.gov (United States)

    Beiting, E. J., III; Feldman, P. D.

    1977-01-01

    The paper presents fabrication details for an intrinsic germanium photodiode developed for study of atmospheric constituents, the airglow and auroras in the 1-2 micron spectral range. Attention is given to cutting of the single crystal, spreading of the lithium dispersion, sputtering of a gold coating, and surface passivation. A wavelength response curve is presented.

  20. High-sensitivity high-stability silicon photodiodes for DUV, VUV and EUV spectral ranges

    NARCIS (Netherlands)

    Shi, L.; Nihtianov, S.; Scholze, F.; Gottwald, A.; Nanver, L.K.

    2011-01-01

    In this paper, the optical and electrical performance of a newly developed silicon photodiode based on pure boron CVD technology (PureB-diodes) is introduced. Due to their extremely shallow p-n junction, with the depletion zone starting only a few nanometers below the surf ce, and nm-thin pure-boron

  1. Passivation of MBE grown InGaSb/InAs superlattice photodiodes

    Science.gov (United States)

    Hill, Cory J.; Keo, Sam S.; Mumolo, Jason M.; Gunapala, Sarath D.

    2005-01-01

    We have performed wet chemical passivation tests on InGaSb/InAs superlattice photodiode structures grown molecular beam epitaxy. The details of the devices growth and characterization as well as the results of chemical passivation involving RuCl3 and H2SO4 with SiO2 dielectric depositions are presented.

  2. High-speed optical receivers with integrated photodiode in nanoscale CMOS

    CERN Document Server

    Tavernier, Filip

    2011-01-01

    This book describes the design of optical receivers that use the most economical integration technology, while enabling performance that is typically only found in very expensive devices. To achieve this, all necessary functionality, from light detection to digital output, is integrated on a single piece of silicon. All building blocks are thoroughly discussed, including photodiodes, transimpedance amplifiers, equalizers and post amplifiers.

  3. The development of photo-diode dosimeter (PD-2000) for the diagnostic x-ray energy

    International Nuclear Information System (INIS)

    It was produced radiation dosimeter used photo-diodes for which ionization by x-ray was applied and evaluated the value of utility in clinics as compared with ion-chamber. The result obtained were as follows: Comparison of ion-chamber with photo-diode dosimeter's x-ray output by the change of x-ray tube voltage and the ratio of ion-chamber to diode was 0.96 ∼ 1.02 which was not affected by x-ray beam quality. The ratio of ion-chamber to diode was 0.96 by change of tube current and 0.97 by change of exposure time that is not affected by x-ray quantity. The ratio of ion-chamber to diode was 0.97 ∼ 1.04 by thickness and 0.93 ∼ 1.10 by radiation field that is little affected by second ray quantity. Reproducibility of photo-diode dosimeter was 0.011 (CV) and it is a good result. Photo-diode dosimeter was affected by the surface angle of detector over 30 degrees. Produced dosimeter was small, light, and meets good result compared with ionization chamber. It was expected come into wide use in clinic

  4. A new circuit model of HgCdTe photodiode for SPICE simulation of integrated IRFPA

    Science.gov (United States)

    Saxena, Raghvendra Sahai; Saini, Navneet Kaur; Bhan, R. K.; Sharma, R. K.

    2014-11-01

    We propose a novel sub circuit model to simulate HgCdTe infrared photodiodes in a circuit simulator, like PSPICE. We have used two diodes of opposite polarity in parallel to represent the forward biased and the reverse biased behavior of an HgCdTe photodiode separately. We also connected a resistor in parallel with them to represent the ohmic shunt and a constant current source to represent photocurrent. We show that by adjusting the parameters in standard diode models and the resistor and current values, we could actually fit the measured data of our various HgCdTe photodiodes having different characteristics. This is a very efficient model that can be used for simulation of readout integrated circuit (ROIC) for HgCdTe IR photodiode arrays. This model also allows circuit level Monte Carlo simulation on a complete IRFPA at a single circuit simulator platform to estimate the non-uniformity for given processes of HgCdTe device fabrication and Si ROIC fabrication.

  5. Video-speed detection of the absolute position of a light point on a large-area photodetector based on luminescent waveguides.

    Science.gov (United States)

    Koeppe, Robert; Neulinger, Anton; Bartu, Petr; Bauer, S

    2010-02-01

    A large-area photosensor is presented that uses the coupling of light into the planar waveguide mode of a polycarbonate foil by luminescent dyes to extend the active area of silicon photodiodes attached to the surface of the foil in a regular pattern. The photodiode signal is directly related to the distance between the point where light is coupled into the foil and the photodiode, thus enabling a precise recovery of the position of a localized light signal hitting the foil. We present a large-area device that can trace the movement of a light point generated by a laser pointer hitting its surface. PMID:20174049

  6. 冷凉区覆膜谷子不同杂交种产量构成及水分利用效率%The Yield Components and WUE of Mulched Millet Hybrids in Cold Areas

    Institute of Scientific and Technical Information of China (English)

    王伟; 李佳; 郭剑; 樊修武

    2012-01-01

    The comparitive test of different genotype hybrids millet under the condition of polythene mulch in cold area with annually accumulated temperature of 2 600 ℃ in Shanxi was done and the results showed that there were significant differences of total yield among millet varieties. The rate of fertile tillers of hybrid millet Zhang 3, hybrid millet Zhang 5 and hybrid millet Zhang 10 were the highest, as well as the better total yield. The average tiller of a basic seeding of hybrid millet Zhang 5 was 3.82, the seed ratio of hybrid millet Zhang 3 was as high as 81%, and there was certain relationship between the rate of fertile tillers and harvest index. The WUE of hybrid millet Zhang 5 and hybrid millet Zhang 10 were 11.72, 11.77 kg/(mm·hm2) respectively. It proved that hybrids millet cultivation could never bring about the soil moisture shortage.%在山西冷凉区(年活动积温2 600℃)地膜覆盖条件下,对谷子不同基因型杂交种进行了对比试验.结果表明:不同品种之间的产量结果差异显著,张杂谷3号、张杂谷5号与张杂谷10号的分蘖成穗较高,产量处于较高水平;张杂谷5号的1个基本苗成穗3.82个,张杂谷3号出籽率达81%;分蘖成穗与收获指数具有一定的相关性;张杂谷5号、张杂谷10号水分利用效率(WUE)分别达11.72,11.77 kg/(mm ·hm2),说明种植谷子杂交种不会引起土壤水分的亏缺.

  7. Removal Natural Organic Matter (NOM) in Peat Water from Wetland Area by Coagulation-Ultrafiltration Hybrid Process with Pretreatment Two-Stage Coagulation

    OpenAIRE

    Mahmud Mahmud; Chairul Abdi; Badaruddin Mu'min

    2013-01-01

    The primary problem encountered in the application of membrane technology was membrane fouling. During this time, hybrid process by coagulation-ultrafiltration in drinking water treatment that has been conducted by some research, using by one-stage coagulation. The goal of this research was to investigate the effect of two-stage coagulation as a pretreatment towards performance of the coagulation-ultrafiltration hybrid process for removal NOM in the peat water. Coagulation process, either wit...

  8. Radiation profile measurements for edge transport barrier discharges in Compact Helical System using AXUV photodiode arrays

    International Nuclear Information System (INIS)

    The formation of edge transport barrier (ETB) has recently been found in Compact Helical System (CHS) plasmas heated by co-injected neutral beam injection (NBI) with strong gas puffing. This regime is characterized by the appearance of the steep gradient of the electron density near the edge following the abrupt drop of hydrogen Balmer alpha (Hα) line intensity. In addition to single channel pyroelectric detector as a conventional bolometer, we have employed unfiltered absolute extreme ultraviolet (AXUV) photodiode arrays as a simple and low-cost diagnostic to investigate spatial and temporal variations of radiation emissivity in the ETB discharges. A compact mounting module for a 20 channel AXUV photodiode array including an in-vacuum preamplifier for immediate current-voltage conversion has successfully been designed and fabricated. Two identical modules installed in the upper and lower viewports provide 40 lines of sight covering the inboard and outboard sides within the horizontally elongated cross section of the CHS plasma with wide viewing angle. Although spectral uniformity of the detector sensitivity of the AXUV photodiode is unsatisfied for photon energies lower than 200 eV, it has been confirmed that the signals of AXUV photodiode and pyroelectric detector in the ETB discharges show roughly the same behavior except for the very beginning and end of the discharges. The results of the measurements in typical ETB discharges show that the signals of all the channels of the AXUV photodiode arrays begin to increase more rapidly at the moment of the transition than before. The rate of the increase is larger for the edge viewing chords than for the center viewing ones, which indicates the flattening of the radiation profile following the change in the electron density profile after the formation of the ETB. However, the signals for the edge chords tend to saturate after several tens of milliseconds, while they still continue to increase for the central chords

  9. High-Speed Radiation Tolerant Avalanche Photodiodes Based on InGaN for Space Altimeter Systems Project

    Data.gov (United States)

    National Aeronautics and Space Administration — High-performance, radiation-tolerant detectors are required for the time-of-flight laser based rangefinders. Avalanche photodiodes (APDs) are conventionally chosen...

  10. Photoelectric characteristics of an inverse U-shape buried doping design for crosstalk suppression in pinned photodiodes

    International Nuclear Information System (INIS)

    A design of an inverse U-shape buried doping in a pinned photodiode (PPD) of CMOS image sensors is proposed for electrical crosstalk suppression between adjacent pixels. The architecture achieves no extra fill factor consumption, and proper built-in electric fields can be established according to the doping gradient created by the injections of the extremely low P-type doping buried regions in the epitaxial layer, causing the excess electrons to easily drift back to the photosensitive area rarely with a diffusion probability; the overall junction capacitance and photosensitive area extensions for a full well capacity (FWC) and internal quantum efficiency (IQE) improving are achieved by the injection of a buried N-type doping. By considering the image lag issue, the process parameters of all the injections have been precisely optimized. Optical simulation results based on the finite difference time domain method show that compared to the conventional PPD, the electrical crosstalk rate of the proposed architecture can be decreased by 60%–80% at an incident wavelength beyond 450 nm, IQE can be clearly improved at an incident wavelength between 400 and 600 nm, and the FWC can be enhanced by 107.5%. Furthermore, the image lag performance is sustained to a perfect low level. The present study provides important guidance on the design of ultra high resolution image sensors. (semiconductor devices)

  11. Lithography-Free, Low-Cost Method for Improving Photodiode Performance by Etching Silicon Nanocones as Antireflection Layer

    CERN Document Server

    Jiang, Jing; Lin, Jiahao; Liu, Gang Logan

    2016-01-01

    A three-step process has been demonstrated to improve the performance of photodiode by creating nanocone forest on the surface of photodiode as an antireflection layer. This high-throughput, low-cost process has been shown to decrease the reflectivity by 66.1%, enhance the quantum efficiency by 27%, and increase the responsivity by 25.7%. This low-cost manufacture process can be applied to increase the responsivity of silicon based photonic devices.

  12. Pinch-off voltage modeling for CMOS image pixels with a pinned photodiode structure

    International Nuclear Information System (INIS)

    A novel analytical model of pinch-off voltage for CMOS image pixels with a pinned photodiode structure is proposed. The derived model takes account of the gradient doping distributions in the N buried layer due to the impurity compensation formed by manufacturing processes; the impurity distribution characteristics of two boundary PN junctions located in the region for particular spectrum response of a pinned photodiode are quantitative analyzed. By solving Poisson's equation in vertical barrier regions, the relationships between the pinch-off voltage and the corresponding process parameters such as peak doping concentration, N type width and doping concentration gradient of the N buried layer are established. Test results have shown that the derived model features the variations of the pinch-off voltage versus the process implant conditions more accurately than the traditional model. The research conclusions in this paper provide theoretical evidence for evaluating the pinch-off voltage design. (semiconductor devices)

  13. A Scintillating Fiber Dosimeter for Radiology and Brachytherapy with photodiode readout

    CERN Document Server

    Rêgo, Florbela; Abreu, Maria da Conceição

    2011-01-01

    Purpose: For more than a decade that plastic optical fiber based dosimeters have been developed for medical applications. The feasibility of dosimeters using optical fibers that are almost Cherenkov light free has been demonstrated in some prototypes, particularly suitable for photon high-energy beams. In the energy range up to a few hundred keV, where the production of Cherenkov light by secondary electrons is negligible or small, the largest source of background are the fluorescence mechanisms. Methods: In recent years our group has developed an optical fiber dosimeter with photodiode readout named DosFib, which has small energy dependence in the range below 100 keV relevant for radiology. Photodiodes are robust photodetectors, presenting good stability over time and enough sensitivity to allow the use of an electrometer as a measuring device without extra electronics. Results: In-vitro tests using a High Dose Rate 192Ir source have demonstrated its suitability for brachytherapy applications using this impo...

  14. Response of a SiC Photodiode to Extreme Ultraviolet through Visible Radiation

    International Nuclear Information System (INIS)

    The responsivity of a type 6H-SiC photodiode in the 1.5-400 nm wavelength range was measured using synchrotron radiation. The responsivity was 0.20 A/W at 270 nm and was less than 0.10 A/W in the extreme ultraviolet (EUV) region. The responsivity was calculated using a proven optical model that accounted for the reflection and absorption of the incident radiation and the variation of the charge collection efficiency (CCE) with depth into the device. The CCE was determined from the responsivity measured in the 200-400 nm wavelength range. By use of this CCE and the effective pair creation energy (7.2 eV) determined from x-ray absorption measurements, the EUV responsivity was accurately modeled with no free parameters. The measured visible-light sensitivity, although low compared with that of a silicon photodiode, was surprisingly high for this wide bandgap semiconductor

  15. Surface passivation of GaInAsSb photodiodes with thioacetamide

    Energy Technology Data Exchange (ETDEWEB)

    Salesse, A.; Joullie, A.; Chevrier, F.; Cuminal, Y.; Ferblantier, G.; Christol, P. [Institut d' Electronique du Sud (IES-CEM2), UMR CNRS 5507, Case 067, Universite Montpellier 2, 34 095 Montpellier Cedex 05 (France); Calas, P. [UMR CNRS 5073 CHIMIE, Case 017, Universite Montpellier 2, 34 095 Montpellier Cedex 05 (France); Nieto, J. [Instituto de Investigacion en Comunicacion Optica (IICO), Universidad Autonoma de San Luis Potosi, Alvaro Obregon 64, San Luis Potosi (Mexico)

    2007-04-15

    AlGaAsSb/GaInAsSb heterojunction mesa photodiodes having 2.2 {mu}m cutoff wavelength, grown by MBE on (p) GaSb substrates, have been passivated using thioacetamide CH{sub 4}CSNH{sub 2} and ammonium sulphide (NH{sub 4}){sub 2}S. Superior characteristics were obtained from devices processed with thioacetamide in acid medium (pH=2.4). At room temperature the surface leakage currents were suppressed, and the photodiodes showed R{sub 0}A product as high as 16 {omega}cm{sup 2} and detectivity D{sup *}(2 {mu}m,0 V){proportional_to}10{sup 10} cmHz{sup 1/2}W{sup -1}. A model explaining sulfuration mechanisms with thioacetamide and (NH{sub 4}){sub 2}S is proposed. (copyright 2007 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  16. A low cost X-ray imaging device based on BPW-34 Si-PIN photodiode

    Science.gov (United States)

    Emirhan, E.; Bayrak, A.; Yücel, E. Barlas; Yücel, M.; Ozben, C. S.

    2016-05-01

    A low cost X-ray imaging device based on BPW-34 silicon PIN photodiode was designed and produced. X-rays were produced from a CEI OX/70-P dental tube using a custom made ±30 kV power supply. A charge sensitive preamplifier and a shaping amplifier were built for the amplification of small signals produced by photons in the depletion layer of Si-PIN photodiode. A two dimensional position control unit was used for moving the detector in small steps to measure the intensity of X-rays absorbed in the object to be imaged. An Aessent AES220B FPGA module was used for transferring the image data to a computer via USB. Images of various samples were obtained with acceptable image quality despite of the low cost of the device.

  17. Commercially available Geiger mode single-photon avalanche photodiode with a very low afterpulsing probability

    CERN Document Server

    Stipčević, Mario

    2015-01-01

    Afterpulsing is one of the main technological flaws present in photon counting detectors based on solid-state semiconductor avalanche photodiodes operated in Geiger mode. Level of afterpulsing depends mainly on type of the semiconductor, doping concentrations and temperature and presents an additional source of noise, along with dark counts. Unlike dark counts which appear randomly in time, aterpulses and are time-correlated with the previous detections. For measurements that rely on timing information afterpulsing can create fake signals and diminish the sensitivity. In this work we test a novel broadband sensitive APD that was designed for sub-Geiger avalanche gain operation. We find that this APD, which has a reach-through geometry typical of single-photon detection photodiodes, can also operate in Geiger mode with usable detection sensitivity and acceptable dark counts level while exhibiting uniquely low afterpulsing. The afterpulsing of tested samples was systematically less than 0.05 percent at 10V exce...

  18. Frequency dependence of junction capacitance of BPW34 and BPW41 p-i-n photodiodes

    Indian Academy of Sciences (India)

    Habibe Bayhan; Şadan Özden

    2007-04-01

    This article investigates the frequency dependence of small-signal capacitance of silicon BPW34 and BPW41 (Vishay) p-i-n photodiodes. We show that the capacitance-frequency characteristics of these photodiodes are well-described by the Schibli and Milnes model. The activation energy and the concentration of the dominant trap levels detected in BPW34 and BPW41 are 280{330 meV and 1.1 × 1012 - 1.2 × 1012 cm-3, respectively. According to the high-frequency - measurements, the impurity concentrations are determined to be about 5.3 × 1012 and 1.9 × 1013 cm-3 in BPW41 and BPW34, respectively using the method of / (-2) vs. .

  19. An auto-ranging photodiode preamplifier with 114 dB dynamic range

    International Nuclear Information System (INIS)

    In many applications, the charge input from a photodiode sensor must be digitized to a high resolution, for example, in x-ray imaging devices. A low noise photodiode preamplifier integrated circuit with auto-ranging gain capability has been designed, fabricated, and tested. When connected to a 25 pF input capacitance, the four-channel device has an input referred noise below 0.5 fC, which is just 3 dB above the minimum kTC noise. The preamp chip is designed to handle a full-scale charge input of 210 pC and has a 114 dB dynamic range. The device achieves a linearity specification of 0.01% of input reading ±0.25 ppm of full scale with a sample period of 1 ms. The chip consumes 135 mW and is 5.8 mm x 7.4 mm in size

  20. Low-noise extended-frequency response with cooled silicon photodiodes

    Science.gov (United States)

    Neiswander, R. S.; Plews, G. S.

    1975-01-01

    It is shown that a substantial reduction in internal noise generated by the photodiode and the preamplifier can be produced by a modest cooling of the components and by optimization of preamplifier design. With this reduction the silicon detectors can, in the SNR range of 5 or greater, produce better performance than photon-noise-limited photomultipliers. The circuit noise and frequency response model suggested by Goranson and Skipper (1974) is expanded to include the effects of frequency dependent FET voltage noise and FET load resistance noise. The modeling of the photodiode and preamplifier is described and the noise characteristics of a 0.01 Hz to 100 kHz bandwidth detector/amplifier channel are evaluated.

  1. A3B5 photodiode sensors for low-temperature pyrometry

    Science.gov (United States)

    Sotnikova, Galina Y.; Aleksandrov, Sergey E.; Gavrilov, Gennadiy A.

    2011-05-01

    Mid-infrared immersion lens photodiodes developed at the Ioffe Institute have high spectral selectivity (λmax/▵λ~0.1...0.15) at different wavelengths -2.9, 3.3, 4.2 and 4.7 microns, the response time (up to 10-9s) and detectivity (D* ~ 109-1011, (cm√Hz)/W) being significantly higher than those of currently known detectors of thermal radiation[1].The analysis of the transfer function of the temperature sensors based on A3B5 photodiodes has shown that they permit implementing the methods of color and two-color pyrometry providing a significant decrease of the methodical error in optical temperature measurements associated with unknown values of object surface emissivity and uncontrollable changes in the environment transmission.

  2. Three advanced designs of micro-pixel avalanche photodiodes: Their present status, maximum possibilities and limitations

    International Nuclear Information System (INIS)

    Novel types of micro-pixel avalanche photodiodes (MAPDs) and their principle of performance are analyzed. The first design contains a common silicon wafer on which a matrix of independent p-n junctions (micro-pixels) with individual surface resistors are created. The individual resistors provide a local suppression of the avalanche process and discharge each micro-pixel to a common metal grid (electrode). The second design is an avalanche photodiode with independent micro-pixels in which the local suppression of the avalanche process is carried out due to the limited conductivity of individual surface drift channels formed along the silicon-silicon oxide boundary. This design is considered as a prototype for a future super-fast avalanche CCD matrix capable to work in a single-photon detection mode. The third design contains a matrix of deep buried multilayer pixels with an individual suppression of the avalanche process in independent vertical channels

  3. Design and realization of a facility for the characterization of Silicon Avalanche PhotoDiodes

    International Nuclear Information System (INIS)

    We present the design, construction, and performance of a facility for the characterization of Silicon Avalanche Photodiodes in the operating temperature range between −2°C and 25°C. The system can simultaneously measure up to 24 photo-detectors, in a completely automatic way, within one day of operations. The measured data for each sensor are: the internal gain as a function of the bias voltage and temperature, the gain variation with respect to the bias voltage, and the dark current as a function of the gain. The systematic uncertainties have been evaluated during the commissioning of the system to be of the order of 1%. This paper describes in detail the facility design and layout, and the procedure employed to characterize the sensors. The results obtained from the measurement of the 380 Avalanche Photodiodes of the CLAS12-Forward Tagger calorimeter detector are then reported, as the first example of the massive usage of the facility

  4. Design and realization of a facility for the characterization of Silicon Avalanche PhotoDiodes

    CERN Document Server

    Celentano, Andrea; De Vita, Raffaella; Fegan, Stuart; Mini, Giuseppe; Nobili, Gianni; Ottonello, Giacomo; Parodi, Franco; Rizzo, Alessandro; Zonta, Irene

    2015-01-01

    We present the design, construction, and performance of a facility for the characterization of Silicon Avalanche Photodiodes in the operating temperature range between -2 $^\\circ$C and 25 $^\\circ$C. The system can simultaneously measure up to 24 photo-detectors, in a completely automatic way, within one day of operations. The measured data for each sensor are: the internal gain as a function of the bias voltage and temperature, the gain variation with respect to the bias voltage, and the dark current as a function of the gain. The systematic uncertainties have been evaluated during the commissioning of the system to be of the order of 1%. This paper describes in detail the facility design and layout, and the procedure employed to characterize the sensors. The results obtained from the measurement of the 380 Avalanche Photodiodes of the CLAS12-Forward Tagger calorimeter detector are then reported, as the first example of the massive usage of the facility.

  5. Ageing tests of radiation damaged lasers and photodiodes for the CMS experiment at CERN

    CERN Document Server

    Gill, K; Batten, J; Cervelli, G; Grabit, R; Jensen, F; Troska, Jan K; Vasey, F

    2000-01-01

    The effects of thermally accelerated ageing in irradiated and unirradiated 1310 nm InGaAsP edge-emitting lasers and InGaAs p-i-n photodiodes are presented. 40 lasers (20 irradiated) and 30 photodiodes (19 irradiated) were aged for 4000 hours at 80 degrees C. Periodic measurements were made of laser threshold and efficiency, and p-i-n leakage current and photocurrent. There were no sudden failures and there was very little wearout related degradation in either unirradiated or irradiated sample groups. The results suggest that the tested devices have a sufficiently long lifetime to operate for at least 10 years inside the Compact Muon Solenoid experiment despite being exposed to a harsh radiation environment. (19 refs).

  6. A novel surface-enhanced Raman spectroscopy substrate based on a large area of MoS2 and Ag nanoparticles hybrid system

    Science.gov (United States)

    Chen, P. X.; Qiu, H. W.; Xu, S. C.; Liu, X. Y.; Li, Z.; Hu, L. T.; Li, C. H.; Guo, J.; Jiang, S. Z.; Huo, Y. Y.

    2016-07-01

    Few layers MoS2 were directly synthesized on Ag nanoparticles (AgNPs) by thermal decomposion method to fabricate a MoS2/AgNPs hybrid system for surface-enhanced Raman scattering (SERS). The MoS2/AgNPs hybrid system shows high performance in terms of sensitivity, signal-to-noise ratio, reproducibility and stability. The minimum detected concentration from MoS2/AgNPs hybrid system for R6 G can reach 10-9 M, which is one order of magnitude lower than that from AgNPs system. The hybrid system shows the reasonable linear response between the Raman intensity and concentration that R2 is reached to 0.988. The maximum deviations of SERS intensities from 20 positions of the SERS substrate are less than 13%. Besides, the hybrid system has a good stability, the Raman intensity only drop by 20% in a month. This work can provide a basis for the fabrication of novel SERS substrates.

  7. A prototype high-resolution animal positron tomograph with avalanche photodiode arrays and LSO crystals

    International Nuclear Information System (INIS)

    To fully utilize positron emission tomography (PET) as a non-invasive tool for tissue characterization, dedicated instrumentation is being developed which is specially suited for imaging mice and rats. Semiconductor detectors, such as avalanche photodiodes (APDs), may offer an alternative to photomultiplier tubes for the readout of scintillation crystals. Since the scintillation characteristics of lutetium oxyorthosilicate (LSO) are well matched to APDs, the combination of LSO and APDs seems favourable, and the goal of this study was to build a positron tomograph with LSO-APD modules to prove the feasibility of such an approach. A prototype PET scanner based on APD readout of small, individual LSO crystals was developed for tracer studies in mice and rats. The tomograph consists of two sectors (86 mm distance), each comprising three LSO-APD modules, which can be rotated for the acquisition of complete projections. In each module, small LSO crystals (3.7 x 3.7 x 12 mm3) are individually coupled to one channel within matrices containing 2 x 8 square APDs (2.6 x 2.6 mm2 sensitive area per channel). The list-mode data are reconstructed with a penalized weighted least squares algorithm which includes the spatially dependent line spread function of the tomograph. Basic performance parameters were measured with phantoms and first experiments with rats and mice were conducted to introduce this methodology for biomedical imaging. The reconstructed field of view covers 68 mm, which is 80% of the total detector diameter. Image resolution was shown to be 2.4 mm within the whole reconstructed field of view. Using a lower energy threshold of 450 keV, the system sensitivity was 350 Hz/MBq for a line source in air in the centre of the field of view. In a water-filled cylinder of 4.6 cm diameter, the scatter fraction at the centre of the field of view was 16% (450 keV threshold). The count rate was linear up to 700 coincidence counts per second. In vivo studies of anaesthetized

  8. Recent progress in high gain InAs avalanche photodiodes (Presentation Recording)

    Science.gov (United States)

    Bank, Seth; Maddox, Scott J.; Sun, Wenlu; Nair, Hari P.; Campbell, Joe C.

    2015-08-01

    InAs possesses nearly ideal material properties for the fabrication of near- and mid-infrared avalanche photodiodes (APDs), which result in strong electron-initiated impact ionization and negligible hole-initiated impact ionization [1]. Consequently, InAs multiplication regions exhibit several appealing characteristics, including extremely low excess noise factors and bandwidth independent of gain [2], [3]. These properties make InAs APDs attractive for a number of near- and mid-infrared sensing applications including remote gas sensing, light detection and ranging (LIDAR), and both active and passive imaging. Here, we discuss our recent advances in the growth and fabrication of high gain, low noise InAs APDs. Devices yielded room temperature multiplication gains >300, with much reduced (~10x) lower dark current densities. We will also discuss a likely key contributor to our current performance limitations: silicon diffusion into the intrinsic (multiplication) region from the underlying n-type layer during growth. Future work will focus on increasing the intrinsic region thickness, targeting gains >1000. This work was supported by the Army Research Office (W911NF-10-1-0391). [1] A. R. J. Marshall, C. H. Tan, M. J. Steer, and J. P. R. David, "Electron dominated impact ionization and avalanche gain characteristics in InAs photodiodes," Applied Physics Letters, vol. 93, p. 111107, 2008. [2] A. R. J. Marshall, A. Krysa, S. Zhang, A. S. Idris, S. Xie, J. P. R. David, and C. H. Tan, "High gain InAs avalanche photodiodes," in 6th EMRS DTC Technical Conference, Edinburgh, Scotland, UK, 2009. [3] S. J. Maddox, W. Sun, Z. Lu, H. P. Nair, J. C. Campbell, and S. R. Bank, "Enhanced low-noise gain from InAs avalanche photodiodes with reduced dark current and background doping," Applied Physics Letters, vol. 101, no. 15, pp. 151124-151124-3, Oct. 2012.

  9. X-ray multi-energy radiography with scintillator-photodiode detectors

    OpenAIRE

    Naydenov, S. V.; Ryzhikov, V. D.; B.V. Grinyov; Lisetskaya, E. K.; Opolonin, A. D.; Kozin, D. N.

    2002-01-01

    For reconstruction of the spatial structure of many-component objects, it is proposed to use multi-radiography with detection of X-ray by combined detector arrays using detectors of ``scintillator-photodiode'' type. A theoretical model has been developed of multi-energy radiography for thickness measurements of multi-layered systems and systems with defects. Experimental studies of the sensitivity, output signal of various inspection systems based on scintillators $ZnSe(Te)$ and $CsI(Tl)$, an...

  10. Vacuum photodiode detectors for soft x-ray ITER plasma tomography

    Science.gov (United States)

    Gott, Yu. V.; Stepanenko, M. M.

    2005-07-01

    A special type of vacuum photodiode detector (VPD) for x-ray tomography of (ITER) plasma is described. Laboratory experiments demonstrate that VPD has high sensitivity to thermal x-rays and low sensitivity to hard gamma rays and neutrons. It was shown that in ITER environment the signal due to thermal x-rays will surpass the background signal by more than a factor of 100.

  11. Spectral and angular dependence of photodiode response to soft X-rays

    International Nuclear Information System (INIS)

    Planar arrays of photodiode detectors for soft X-ray tomography on magnetic fusion devices have become very popular. They are economic and allow very compact camera designs. Unlike X-ray cameras based on single element detectors placed on a semicircle around the pinhole, the angle of incidence is different for each diode of such an array. Since uniformity of response is crucial for tomography we have investigated the effect and ways to compensate for it. (author) 3 figs., 9 refs

  12. Vacuum photodiode detectors for soft x-ray ITER plasma tomography

    International Nuclear Information System (INIS)

    A special type of vacuum photodiode detector (VPD) for x-ray tomography of (ITER) plasma is described. Laboratory experiments demonstrate that VPD has high sensitivity to thermal x-rays and low sensitivity to hard gamma rays and neutrons. It was shown that in ITER environment the signal due to thermal x-rays will surpass the background signal by more than a factor of 100

  13. Silicon Geiger-mode avalanche photodiode arrays for photon-starved imaging

    Science.gov (United States)

    Aull, Brian F.

    2015-05-01

    Geiger-mode avalanche photodiodes (GMAPDs) are capable of detecting single photons. They can be operated to directly trigger all-digital circuits, so that detection events are digitally counted or time stamped in each pixel. An imager based on an array of GMAPDs therefore has zero readout noise, enabling quantum-limited sensitivity for photon-starved imaging applications. In this review, we discuss devices developed for 3D imaging, wavefront sensing, and passive imaging.

  14. Avoiding sensor blindness in Geiger mode avalanche photodiode arrays fabricated in a conventional CMOS process

    OpenAIRE

    Vilella Figueras, Eva; Diéguez Barrientos, Àngel

    2011-01-01

    The need to move forward in the knowledge of the subatomic world has stimulated the development of new particle colliders. However, the objectives of the next generation of colliders sets unprecedented challenges to the detector performance. The purpose of this contribution is to present a bidimensional array based on avalanche photodiodes operated in the Geiger mode to track high energy particles in future linear colliders. The bidimensional array can function in a gated mode to reduce the p...

  15. Multi-energy radiography on the basis of 'scintillator-photodiode' detectors

    Energy Technology Data Exchange (ETDEWEB)

    Ryzhikov, V.D.; Naydenov, S.V. E-mail: naydenov@isc.kharkov.com; Grinyov, B.V.; Lisetskaya, E.K.; Kozin, D.N.; Opolonin, A.D.; Starzhinskiy, N.G

    2003-06-01

    For reconstruction of the spatial structure and thicknesses of complex objects and materials, it is proposed to use multi-radiography with detection of X-ray or gamma-radiation by combined detector arrays of 'scintillator-photodiode' type. Experimental studies have been carried out of the energy dependence of sensitivity of dual-energy inspection systems based on scintillators ZnSe(Te) and CsI(Tl)

  16. Estimation and Modeling of the Full Well Capacity in Pinned Photodiode CMOS Image Sensors

    OpenAIRE

    Pelamatti, Alice; Goiffon, Vincent; Estribeau, Magali; Cervantes, Paola; Magnan, Pierre

    2013-01-01

    This letter presents a simple analytical model for the evaluation of the full well capacity (FWC) of pinned photodiode (PPD) CMOS image sensors depending on the operating conditions and on the pixel parameters. While in the literature and technical documentations FWC values are generally presented as fixed values independent of the operating conditions, this letter demonstrates that the PPD charge handling capability is strongly dependent on the photon flux.

  17. Novel approach to improve reliable color recognition in a-Si:H photodiodes

    Science.gov (United States)

    Watty, Krystian; Bablich, Andreas; Seibel, Konstantin; Merfort, Christian; Böhm, Markus

    2012-06-01

    Optical detection is an often used technique for recognition of potentially dangerous materials. Hydrogenated amorphous silicon (a-Si:H) technology provides an inexpensive alternative material compared to crystalline silicon for being used in photonic devices operating in the visible spectrum. Further materials' key benefits are the high light absorption, the voltage-tunable spectral sensitivity and the high space efficiency. Present research efforts concentrate on the determination of the color information in a-Si:H photodiodes. This work presents an approach to improve color recognition of a-Si:H photodiodes by modifying the layer sequence. The maximum of the spectral response (SR) of a single i-layer a-Si:H photodiode can be shifted by varying its bias voltage. In this case, the shift is not more than some nanometers. Precise color recognition requires different SR maxima (e.g. RGB-model). One possibility to accomplish a separation of the SR is to engineer the bandgap; another idea, which is presented here, is based on a layer sequence modification. Normally, the SR at higher reverse bias voltages, with the maximum at longer wavelengths, encloses that at lower voltages. Splitting the SR leads to an improvement of color recognition and is achieved by depositing an additional interior anode. The SR maximum shift amounts to 100nm, from 570nm by contacting the interior anode, to 670nm at the top anode. Furthermore, the curves are clearly split. The presented approach should lead to a tunable multi-spectral photodiode for high quality color recognition. Such a diode can be used in photonic devices, e.g. for safety and security applications.

  18. PIN Photodiodes for Radiation Monitoring and Protection in the BaBar Silicon Vertex Tracker

    OpenAIRE

    Babar Collaboration; T.I. Meyer

    2000-01-01

    We discuss the design, implementation and performance of the radiation monitoring and protection system used by the Silicon Vertex Tracker (SVT) in the BaBar detector. Using 12 reverse-biased PIN photodiodes mounted around the beampipe near the IP, we are able to provide instantaneous radiation dose rates, absorbed dose integrals, and active protection that aborts the circulating beams in the PEP-II storage ring when radiation levels exceed user-defined thresholds. The system has reliably pro...

  19. Resonant cavity enhanced InGaAs photodiodes for high speed detection of 1.55 μm infrared radiation

    Science.gov (United States)

    Kaniewski, J.; Muszalski, J.; Pawluczyk, J.; Piotrowski, J.

    2005-05-01

    Resonant cavity enhanced photodetectors are promising candidates for applications in high-speed optical communications due to their high quantum efficiency and large bandwidth. This is a consequence of placing the thin absorber of the photodetector inside a Fabry-Perot microcavity so the absorption could be enhanced by recycling the photons with resonance wavelength. The performance of uncooled resonant cavity enhanced InGaAs/InAlAs photovoltaic devices operating near 1.55 μm has been studied both theoretically and experimentally. The analyses include two different types of structures with cavity end mirrors made of semiconducting and metallic reflectors as well as semiconducting and hybrid (dielectric Si3N4/SiO2 + metal) Bragg reflectors. Optimization of the device design includes: absorption layer thickness, position of absorption layer within the cavity and number of layers in distributed Bragg reflectors. Dependence of absorption on wavelength and incidence angle are discussed. Various issues related to applications of resonance cavity enhanced photodiodes in optical systems are considered. Practical devices with metallic and hybrid mirrors were fabricated by molecular beam epitaxy and by microwave-compatible processing. A properly designed device of this type has potential for subpicosecond response time.

  20. Performance of a PET detector module utilizing an array of silicon photodiodes to identify the crystal of interaction

    International Nuclear Information System (INIS)

    The authors initial performance results for a new multi-layer PET detector module consisting of an array of 3 mm square by 30 mm deep BGO crystals coupled on one end to a single photomultiplier tube and on the opposite end to an array of 3 mm square silicon photodiodes. The photomultiplier tube provides an accurate timing pulse and energy discrimination for all the crystals in the module, while the silicon photodiodes identify the crystal of interaction. When a single BGO crystal at +25 C is excited with 511 keV photons, the authors measure a photodiode signal centered at 700 electrons (e-) with noise of 375 e- fwhm. When a four crystal/photodiode module is excited with a collimated line source of 511 keV photons, the crystal of interaction is correctly identified 82% of the time. The misidentification rate can be greatly reduced and an 8 x 8 crystal/photodiode module constructed by using thicker depletion layer photodiodes or cooling to 0 C

  1. Slow-light effect in a silicon photonic crystal waveguide as a sub-bandgap photodiode.

    Science.gov (United States)

    Terada, Yosuke; Miyasaka, Kenji; Ito, Hiroyuki; Baba, Toshihiko

    2016-01-15

    We demonstrate a Si sub-bandgap photodiode in a photonic crystal slow-light waveguide that operates at telecom wavelengths and can be fabricated using a Ge-free, standard Si-photonics CMOS process. In photodiodes based on absorption via mid-bandgap states, the slow-light enhancement enables performance that is well balanced among high responsivity, low dark current, high speed, wide working spectrum, and CMOS-process compatibility, all of which are otherwise difficult to achieve simultaneously. Owing to the slow-light effect and supplemental gain at a high reverse bias, the photodiode shows a responsivity of 0.15  A/W with a low dark current of 40 nA, which is attributed to no particular processes such as ion implantation and excess exposure of the Si surface. The maximum responsivity was 0.36  A/W. The modest gain allows for sufficient frequency bandwidth to observe an eye opening at up to 30  Gb/s. PMID:26766696

  2. 'Scintillator-photodiode' detectors for scanning introscopy with high-spatial resolution

    Energy Technology Data Exchange (ETDEWEB)

    Ryzhikov, V. E-mail: vlada@isc.kharkov; Kozin, D.; Grinyov, B.; Lysetskaya, E.; Katrunov, K.; Kvyatnitskaya, V.; Chernikov, V

    2003-06-01

    The improvement of spatial resolution, together with reducing the dose load upon the tested object and making the scanning time shorter, is an essential aim in designing new radiographic systems. In this paper, we consider a possibility to use 'scintillator-photodiode' detectors in radiographic systems in order to obtain resolution better than 1 line pair per mm (detector array pitch less than 1 mm). A possibility is considered to use various types of scintillators (CsI(Tl), CdWO{sub 4}, ZnSe(Te)), various kinds of scintillation elements (separate scintillation elements, scintillation monoplates, plates made of a small-crystalline scintillator and a binding substance) with differently treated surfaces, different binders, reflective coatings, photoconverters (photodiode or photodiode+amplifier+commutator in one housing). It has been shown that ZnSe(Te) scintillators are preferable for detectors of X-ray and low-energy gamma-radiation (20-100 keV) with array pitch as small as 0.2 mm. CsI(Tl) should be used for 70-200 keV energies (0.4 mm pitch), CdWO{sub 4} crystals--for 0.3-10 MeV energies (pitch 0.4 mm)

  3. Radiation effects in pinned photodiode CMOS image sensors: pixel performance degradation due to total ionizing dose

    International Nuclear Information System (INIS)

    Several Pinned Photodiode (PPD) CMOS Image Sensors (CIS) are designed, manufactured, characterized and exposed biased to ionizing radiation up to 10 kGy(SiO2). In addition to the usually reported dark current increase and quantum efficiency drop at short wavelengths, several original radiation effects are shown: an increase of the pinning voltage, a decrease of the buried photodiode full well capacity, a large change in charge transfer efficiency, the creation of a large number of Total Ionizing Dose (TID) induced Dark Current Random Telegraph Signal (DC-RTS) centers active in the photodiode (even when the Transfer Gate (TG) is accumulated) and the complete depletion of the Pre-Metal Dielectric (PMD) interface at the highest TID leading to a large dark current and the loss of control of the TG on the dark current. The proposed mechanisms at the origin of these degradations are discussed. It is also demonstrated that biasing (i.e., operating) the PPD CIS during irradiation does not enhance the degradations compared to sensors grounded during irradiation. (authors)

  4. Passive and hybrid solar energy usage in inner cities with densely built-up areas. Research and demonstration project Luetzowstrasse 5, Berlin-Tiergarten. Passive und hybride Solarenergienutzung im innerstaedtischen verdichteten Wohnungsbau. Forschungs- und Demonstrationsprojekt Luetzowstrasse 5, Berlin-Tiergarten

    Energy Technology Data Exchange (ETDEWEB)

    Schreck, H.; Hillmann, G.; Nagel, J.; Gueldenberg, M.; Kempchen, P.; Loehnert, G. (Institut fuer Bau-, Umwelt- und Solarforschung GmbH, Berlin (Germany)); Erhorn, H.; Stricker, R.; Reiss, J. (Fraunhofer-Institut fuer Bauphysik, Stuttgart (Germany)); Le Marie, A.; Grimme, F.W. (Forschungszentrum Juelich GmbH (Germany). Projekttraeger Biologie, Energie, Oekologie (BEO))

    1991-01-01

    A large residential house in Berlin was redeveloped as part of the research project 'German Cooperation in IEA Task VIII' 'Passive and Hybrid solar low energy buildings'. Combination of active and passive systems and their integration into energy saving building methods are and important aspect. Mechanical and electronic systems helped to develop optimised energy-efficient components. The building was subjected to measurements for two years. The combination of systems were compared with a reference flat in the same house that did not have passive and hybrid systems. The average consumption of the solar flats is 40% of those built conventionally. User behaviour has proved to be an essential factor of energy consumption. More intensive information could lead to further savings. (BWI).

  5. Performance degradation of Si pin photodiodes, used as particle detectors, under 2 MeV proton irradiation

    International Nuclear Information System (INIS)

    Complete text of publication follows. Nowadays high quality Si pin photodiodes are cheap and reliable alternatives to nuclear semiconductor detectors for a wide range of application, especially for charged particle detection. Normal silicon with low oxygen content, however, is known as having low radiation tolerance. Therefore, the performance degradation of Hamamatsu S-5821 diodes has been investigated as a function of fluence for a series of ions. Selected areas of a photodiode were irradiated with various fluences of 2 MeV protons in the range of 1 x 109 - 5 x 1011 ion/cm2 without applying any bias. In order to investigate the impact of the irradiation on the particle detection response of the diode the radiation induced changes were measured with IBIC mapping using also 2 MeV protons in a wide range of reverse bias, from 0 to 100 V in logarithmic steps. The major influence of the irradiation is the decrease of the charge collection efficiency (CCE), i.e. the shift of the spectral peak position towards lower energies, and the increase of the dispersion of CCE, i.e. the widening of the spectral peaks, in other words the increase of the FWHM values, Δ. Since within the irradiated regions these quantities show strong position dependence due to boundary effect, the evaluation of the experimental data was restricted to the central homogenous parts. Quantitative empirical relationships above 10 V bias for the radiation induced contributions to the CCE and FWHM have been deduced as follows [1]: δ(CCE)rad = (-3.3 ± 0.5) x 10-13 Φ[cm-2]/U[V] Δrad[keV ] = (4 ± 1.5) x 10-5 √Φ[cm-2]/U[V] These contributions add linearly to irradiation free CCE, and quadratically to FWHM values, respectively. Since the effect of the irradiation - both on CCE and FWHM - is inversely proportional to the applied bias voltage, it can be significantly reduced by applying the possible highest bias without breakdown or increase of electrical noises due to increased leakage current. In this

  6. HgCdTe e-avalanche photodiode detector arrays

    OpenAIRE

    Anand Singh; Shukla, A. K.; Ravinder Pal

    2015-01-01

    Initial results on the MWIR e-APD detector arrays with 30 μm pitch fabricated on LPE grown compositionally graded p-HgCdTe epilayers are presented. High dynamic resistance times active area (R0A) product 2 × 106 Ω-cm2, low dark current density 4 nA/cm2 and high gain 5500 at -8 V were achieved in the n+-υ-p+ HgCdTe e-APD at 80 K. LPE based HgCdTe e-APD development makes this technology amenable for adoption in the foundries established for the conventional HgCdTe photovoltaic detector arrays w...

  7. Progress in MBE grown type-II superlattice photodiodes

    Science.gov (United States)

    Hill, Cory J.; Li, Jian V.; Mumolo, Jason M.; Gunapala, Sarath D.

    2006-01-01

    We report on the status of GaSb/InAs type-II superlattice diodes grown and fabricated at the Jet Propulsion Laboratory designed for infrared absorption in the 8-12(mu)m range. Recent devices have produced detectivities as high as 8x10 to the tenth power Jones with a differential resistance-area product greater than 6 Ohmcm(sup 2) at 80K with a long wavelength cutoff of approximately 12(mu)m. The measured quantum efficiency of these front-side illuminated devices is close to 30% in the 10-11(mu)m range without antireflection coatings.

  8. Feasibility study of silicon PN photodiodes as X-ray intensity monitors for high flux X-ray beam with synchrotron radiation

    CERN Document Server

    Sato, K

    1999-01-01

    The basic properties of silicon PN photodiodes as X-ray detectors with synchrotron radiation and their application to XAFS measurements have been investigated. The effects of diffraction peaks due to the crystalline structure of the photodiodes have been eliminated by mounting the scintillators on the photodiodes; (1) CsI(Tl) crystal as a X-ray total absorption detection medium and (2) plastic scintillator as a non-crystalline solid state X-ray detection medium. An accurate comparison between XAFS signals detected by ionization chambers and silicon PN photodiodes is presented. It is shown that good quality XAFS measurements with silicon PN photodiodes are possible by eliminating the diffraction effects with scintillator photodiode configurations.

  9. Feasibility study of silicon PN photodiodes as X-ray intensity monitors for high flux X-ray beam with synchrotron radiation

    International Nuclear Information System (INIS)

    The basic properties of silicon PN photodiodes as X-ray detectors with synchrotron radiation and their application to XAFS measurements have been investigated. The effects of diffraction peaks due to the crystalline structure of the photodiodes have been eliminated by mounting the scintillators on the photodiodes; (1) CsI(Tl) crystal as a X-ray total absorption detection medium and (2) plastic scintillator as a non-crystalline solid state X-ray detection medium. An accurate comparison between XAFS signals detected by ionization chambers and silicon PN photodiodes is presented. It is shown that good quality XAFS measurements with silicon PN photodiodes are possible by eliminating the diffraction effects with scintillator photodiode configurations

  10. Recent progress of avalanche photodiodes in high-resolution X-rays and Gamma-rays detection

    CERN Document Server

    Kataoka, J; Kuramoto, Y; Ikagawa, T; Yatsu, Y; Kotoku, J; Arimoto, M; Kawai, N; Ishikawa, Y; Kawabata, N

    2005-01-01

    We have studied the performance of large area avalanche photodiodes (APDs) recently developed by Hamamatsu Photonics K.K, in high-resolution X-rays and Gamma-rays detections. We show that reach-through APD can be an excellent soft X-ray detector operating at room temperature or moderately cooled environment. We obtain the best energy resolution ever achieved with APDs, 6.4 % for 5.9 keV X-rays, and obtain the energy threshold as low as 0.5 keV measured at -20deg. Thanks to its fast timing response, signal carriers in the APD device are collected within a short time interval of 1.9 nsec (FWHM). This type of APDs can therefore be used as a low-energy, high-counting particle monitor onboard the forthcoming Pico-satellite Cute1.7. As a scintillation photon detector, reverse-type APDs have a good advantage of reducing the dark noise significantly. The best FWHM energy resolutions of 9.4+-0.3 % and 4.9+-0.2 % were obtained for 59.5 keV and 662 keV Gamma-rays, respectively, as measured with a CsI(Tl) crystal. Combin...

  11. Measurements of patient chest dose for multi-slice X-ray CT examinations using PIN photodiode dosimeters

    International Nuclear Information System (INIS)

    Organ and tissue doses delivered during chest CT examinations were measured as a function of scanning parameters including tube current, slice thickness, and pitch of the multi-slice CT scanner. Measurements were carried out by using a chest dosimetry phantom that incorporated lung and vertebra models, and by putting PIN photodiode dosimeters into the phantom at sites of the esophagus or stomach, lung, bone marrow, and skin. Absorbed doses at each site in the phantom measured for a constant scan area indicated that these values could be precisely calculated from the value obtained at any scanning parameter by using inverse proportionality of dose to pitch and the data of x-ray intensity as a function of tube current and slice thickness measured for the CT scanner used. Relative dose at each site was found to be constant regardless of the scanning parameters, indicating that the dose value at each site could be calculated from that measured at only one point in the phantom. Effective doses and effective dose equivalents were estimated from organ or tissue doses for chest CT examinations, and were found to be 1.5 to 3 times larger than the average values of effective dose equivalent appearing in the literature. (author)

  12. The growth of CdHgTe on GaAs and fabrication of high-quality photodiodes

    International Nuclear Information System (INIS)

    The use of metal organic vapor phase epitaxy (MOVPE) for the growth of device quality CdHgTe (MCT) on GaAs has been studied extensively. This is the first report of diode formation by mercury diffusion in the MOVPE grown material. It is also the first report of medium-wavelength infrared (MWIR) photodiodes made in the material. The effect of altering the cadmium to tellurium alkyl ratios on the growth of a CdTe buffer on (100) and (111)GaAs was investigated. For every alkyl ratio used, it was possible to grow (111) or (100)CdTe on (100)GaAs. (100)CdTe/(100)GaAs samples exhibited very sharp, well-defined photoluminescence spectra and x-ray rocking curve full width half-maximum (FWHM) peaks of 2) over a large area (25x25 mm2). FWHMs of 80--90 arc s are routinely achieved for (100)MCT layers. Linear diode arrays have been fabricated with 77 K R0A values typically of 3x103 Ω cm2 for 7.5 μm cutoff. The detectivity of a 5.5 μm cutoff diode was 1.5x1011 cm Hz1/2 W-1 at 77 K, and 1.3x1010 cm Hz1/2 W-1 at 193 K. This is comparable to the performance obtained with the best traveling heater method devices

  13. Comparative study of various pixel photodiodes for digital radiography: junction structure, corner shape and noble window opening

    International Nuclear Information System (INIS)

    Recently, large-size 3-transistors (3-Tr) active pixel complementary metal-oxide silicon (CMOS) image sensors have been being used for medium-size digital X-ray radiography, such as dental computed tomography (CT), mammography and nondestructive testing (NDT) for consumer products. We designed and fabricated 50 μm x 50 μm 3-Tr test pixels having a pixel photodiode with various structures and shapes by using the TSMC 0.25-m standard CMOS process to compare their optical characteristics. The pixel photodiode output was continuously sampled while a test pixel was continuously illuminated by using 550-nm light at a constant intensity. The measurement was repeated 300 times for each test pixel to obtain reliable results on the mean and the variance of the pixel output at each sampling time. The sampling rate was 50 kHz, and the reset period was 200 msec. To estimate the conversion gain, we used the mean-variance method. From the measured results, the n-well/p-substrate photodiode, among 3 photodiode structures available in a standard CMOS process, showed the best performance at a low illumination equivalent to the typical X-ray signal range. The quantum efficiencies of the n+/p-well, n-well/p-substrate, and n+/p-substrate photodiodes were 18.5%, 62.1%, and 51.5%, respectively. From a comparison of pixels with rounded and rectangular corners, we found that a rounded corner structure could reduce the dark current in large-size pixels. A pixel with four rounded corners showed a reduced dark current of about 200 fA compared to a pixel with four rectangular corners in our pixel sample size. Photodiodes with round p-implant openings showed about 5% higher dark current, but about 34% higher sensitivities, than the conventional photodiodes.

  14. Comparative study of various pixel photodiodes for digital radiography: Junction structure, corner shape and noble window opening

    Science.gov (United States)

    Kang, Dong-Uk; Cho, Minsik; Lee, Dae Hee; Yoo, Hyunjun; Kim, Myung Soo; Bae, Jun Hyung; Kim, Hyoungtaek; Kim, Jongyul; Kim, Hyunduk; Cho, Gyuseong

    2012-05-01

    Recently, large-size 3-transistors (3-Tr) active pixel complementary metal-oxide silicon (CMOS) image sensors have been being used for medium-size digital X-ray radiography, such as dental computed tomography (CT), mammography and nondestructive testing (NDT) for consumer products. We designed and fabricated 50 µm × 50 µm 3-Tr test pixels having a pixel photodiode with various structures and shapes by using the TSMC 0.25-m standard CMOS process to compare their optical characteristics. The pixel photodiode output was continuously sampled while a test pixel was continuously illuminated by using 550-nm light at a constant intensity. The measurement was repeated 300 times for each test pixel to obtain reliable results on the mean and the variance of the pixel output at each sampling time. The sampling rate was 50 kHz, and the reset period was 200 msec. To estimate the conversion gain, we used the mean-variance method. From the measured results, the n-well/p-substrate photodiode, among 3 photodiode structures available in a standard CMOS process, showed the best performance at a low illumination equivalent to the typical X-ray signal range. The quantum efficiencies of the n+/p-well, n-well/p-substrate, and n+/p-substrate photodiodes were 18.5%, 62.1%, and 51.5%, respectively. From a comparison of pixels with rounded and rectangular corners, we found that a rounded corner structure could reduce the dark current in large-size pixels. A pixel with four rounded corners showed a reduced dark current of about 200fA compared to a pixel with four rectangular corners in our pixel sample size. Photodiodes with round p-implant openings showed about 5% higher dark current, but about 34% higher sensitivities, than the conventional photodiodes.

  15. Comparative study of various pixel photodiodes for digital radiography: junction structure, corner shape and noble window opening

    Energy Technology Data Exchange (ETDEWEB)

    Kang, Dong-Uk; Cho, Min-Sik; Lee, Dae-Hee; Yoo, Hyun-Jun; Kim, Myung-Soo; Bae, Jun-Hyung; Kim, Hyoung-Taek; Kim, Jong-Yul; Kim, Hyun-Duk; Cho, Gyu-Seong [Korea Advanced Institute of Science and Technology, Daejeon (Korea, Republic of)

    2012-05-15

    Recently, large-size 3-transistors (3-Tr) active pixel complementary metal-oxide silicon (CMOS) image sensors have been being used for medium-size digital X-ray radiography, such as dental computed tomography (CT), mammography and nondestructive testing (NDT) for consumer products. We designed and fabricated 50 μm x 50 μm 3-Tr test pixels having a pixel photodiode with various structures and shapes by using the TSMC 0.25-m standard CMOS process to compare their optical characteristics. The pixel photodiode output was continuously sampled while a test pixel was continuously illuminated by using 550-nm light at a constant intensity. The measurement was repeated 300 times for each test pixel to obtain reliable results on the mean and the variance of the pixel output at each sampling time. The sampling rate was 50 kHz, and the reset period was 200 msec. To estimate the conversion gain, we used the mean-variance method. From the measured results, the n-well/p-substrate photodiode, among 3 photodiode structures available in a standard CMOS process, showed the best performance at a low illumination equivalent to the typical X-ray signal range. The quantum efficiencies of the n+/p-well, n-well/p-substrate, and n+/p-substrate photodiodes were 18.5%, 62.1%, and 51.5%, respectively. From a comparison of pixels with rounded and rectangular corners, we found that a rounded corner structure could reduce the dark current in large-size pixels. A pixel with four rounded corners showed a reduced dark current of about 200 fA compared to a pixel with four rectangular corners in our pixel sample size. Photodiodes with round p-implant openings showed about 5% higher dark current, but about 34% higher sensitivities, than the conventional photodiodes.

  16. A Monolithically Integrated InP-Based HBT and p-i-n Photodiode Using New Stack-Shared Layer Scheme

    OpenAIRE

    Kim, Moonjung; Cha, Jung-Ho; Shin, Seong-Ho; Jeon, Soo-Kun; Kim, Jaeho; Kwon, Young-Se

    2003-01-01

    New stack-shared layer scheme has been developed to integrate monolithically InP-based heterojunction bipolar transistor (HBT)and p-i-n photodiode.In this layer scheme,a p + -and intrinsic InGaAs layers for a photodiode were stacked on n + -InP emitter layer, which is shared as both emitter contact layer for an HBT and n-type contact layer for a photodiode.The fabricated HBTs demonstrated excellent high-speed characteristics of f T =108 GHz and f max =300 GHz.The photodiode,formed with an und...

  17. Quantitative analysis of flavonols, flavones, and flavanones in fruits, vegetables and beverages by high-performance liquid chromatography with photo-diode array and mass spectrometric detection

    DEFF Research Database (Denmark)

    Justesen, U.; Knuthsen, Pia; Leth, Torben

    1998-01-01

    A high-performance liquid chromatographic (HPLC) separation method viith photo-diode array (PDA) and mass spectrometric (MS) detection was developed to determine and quantify flavonols, flavones, and flavanones in fruits, vegetables and beverages. The compounds were analysed as aglycones, obtained...... after acid hydrolysis of freeze-dried food material. Identification was based on retention time, UV and mass spectra by comparison with commercial standards, and the UV peak areas were used for quantitation of the flavonoid contents. Examples of HPLC-MS analyses of orange pulp, tomato, and apple are...... presented. The method has been used to screen foods on the Danish market, and the contents of flavones, flavonols, and flavanones were measured. (C) 1998 Elsevier Science B.V....

  18. State-of-the-art performance of GaAlAs/GaAs avalanche photodiodes

    Science.gov (United States)

    Law, H. D.; Nakano, K.; Tomasetta, L. R.

    1979-01-01

    Ga(0.15)Al(0.85)As/GaAs avalanche photodiodes have been successfully fabricated. The performance of these detectors is characterized by a rise time of less than 35 ps, an external quantum efficiency with an antireflection coating of 95% at 0.53 microns, and a microwave optical gain of 42 dB. The dark current density is in the low range (10 to the minus A/sq cm) at one-half the breakdown voltages, and rises to 0.0001 A/sq cm at 42 dB optical gain.

  19. Lung inhomogeneity effect in the radiotherapy treatments using the BPW-34 photodiode detector

    International Nuclear Information System (INIS)

    The presence, in the radiation field, of regions with composition and/or differing from soft tissue may significantly affect the tumoral dose distribution in radiotherapy treatments. The effect of the lung on the dose distribution in the near by tissues was studied with high energy rays cγ of 60 Co and 10 MV, 6 MV - X-ray) and using a BPW-34 photodiode as a detector. The results obtained showed that the tumoral dose is reduced in the region anterior to the lung, due to backscattering reduction, whereas it is enhanced beyond the lung due to the lower attenuation in the inhomogeneity. (author). 36 refs, 11 figs, 12 tabs

  20. Comparison of Diffused and Implanted InSb pn-photodiodes Performance

    OpenAIRE

    Asadollahi, Ali

    2011-01-01

    In this project, two different methods for fabrication of InSb p-n photodiodes were compared. Ion implantation with Mg as a standard way to fabricate InSb p-n diodes was compared to in-diffusion of zinc atoms from the gas phase using a metal organic vapor phase epitaxy (MOVPE) system. The application of this method to the InSb system has not been previously reported. A Monte-Carlo-based simulation program (SRIM: Stopping and Range of Ions in Matter) was utilized to simulate and extract doses ...

  1. Gigacount/second photon detection with InGaAs avalanche photodiodes

    CERN Document Server

    Patel, K A; Sharpe, A W; Yuan, Z L; Penty, R V; Shields, A J

    2012-01-01

    We demonstrate high count rate single photon detection at telecom wavelengths using a thermoelectrically-cooled semiconductor diode. Our device consists of a single InGaAs avalanche photodiode driven by a 2 GHz gating frequency signal and coupled to a tuneable self-differencing circuit for enhanced detection sensitivity. We find the count rate is linear with the photon flux in the single photon detection regime over approximately four orders of magnitude, and saturates at 1 gigacount/s at high photon fluxes. This result highlights promising potential for APDs in high bit rate quantum information applications.

  2. X-ray multi-energy radiography with "scintillator-photodiode" detectors

    CERN Document Server

    Ryzhikov, V D; Grinyov, B V; Lisetskaya, E K; Opolonin, A D; Kozin, D N

    2002-01-01

    For reconstruction of the spatial structure of many-component objects, it is proposed to use multi-radiography with detection of X-ray by combined detector arrays using detectors of ``scintillator-photodiode'' type. A theoretical model has been developed of multi-energy radiography for thickness measurements of multi-layered systems and systems with defects. Experimental studies of the sensitivity, output signal of various inspection systems based on scintillators $ZnSe(Te)$ and $CsI(Tl)$, and object image reconstruction (with organics and non-ogranics materials singled out) have been carried out.

  3. Generation efficiency of single-photon current pulses in the Geiger mode of silicon avalanche photodiodes

    International Nuclear Information System (INIS)

    Statistical fluctuations of the avalanche's multiplication efficiency were studied as applied to the single-photon (Geiger) mode of avalanche photodiodes. The distribution function of partial multiplication factors with an anomalously wide (of the order of the average) dispersion was obtained. Expressions for partial feedback factors were derived in terms of the average gain and the corresponding dependences on the diode's overvoltage were calculated. Final expressions for the photon-electric pulse's conversion were derived by averaging corresponding formulas over the coordinate of initiating photoelectron generation using the functions of optical photon absorption in silicon.

  4. Properties of the most recent avalanche photodiodes for the CMS electromagnetic calorimeter

    CERN Document Server

    Deiters, K; Nicol, S; Patel, B; Renker, D; Reucroft, S; Rusack, R W; Sakhelashvili, T M; Swain, J D; Vikas, P

    2000-01-01

    Avalanche photodiodes (APDs) with improved characteristics are being developed by Hamamatsu Photonics for the electromagnetic calorimeter of the CMS experiment. More than 30 prototypes have been made and investigated during the last 3 years in a development program, that showed significant progress. The parameters of the most recent APDs including the long-term stability and the effect of high radiation levels with a neutron fluence of 2*10/sup 13/ n/cm/sup 2/ have been studied and are presented. (4 refs).

  5. Vacuum photodiode detectors for broadband vacuum ultraviolet detection in the Saha Institute of Nuclear Physics Tokamak

    Science.gov (United States)

    Rao, C. V. S.; Shankara Joisa, Y.; Hansalia, C. J.; Hui, Amit K.; Paul, Ratan; Ranjan, Prabhat

    1997-02-01

    We report on the application of the vacuum photodiode to detect vacuum ultraviolet (VUV) radiation emitted from the Saha Institute of Nuclear Physics (SINP) Tokamak. It is simple to fabricate and provides broadband spectral response in the VUV and ultrasoft x ray (10 eV-1 keV). In our design, a stainless steel photocathode is used, which has a response identical to tungsten in the wavelength range 100-1200 Å. Its surface is passivated, to minimize contamination and monolayer deposition, by electropolishing it. Some representative experimental results illustrating the range of applicability are presented with special emphasis on its performance in disruptive shots.

  6. Results from a test of a Cu-scintillator calorimeter module with photodiode readout

    International Nuclear Information System (INIS)

    A calorimeter module of 17 radiation lengths depth has been built. Wavelength shifter (WLS) bars coupled to rectangular silicon photodiodes (PD's) are use as readout. Considerations in the design of the WLS bars, with particular emphasis on optimising the efficiency for PD readout, are discussed. The energy resolution for electrons has been determined to be about 9%/√E between 2 and 50 GeV. The response to hadrons is presented and the prospects for the construction of a full-sized hadron calorimeter are discussed. (orig.)

  7. [Study on UV-visible DOAS system based on photodiode array (PDA)].

    Science.gov (United States)

    Qin, Min; Xie, Pin-hua; Liu, Jian-guo; Liu, Wen-qing; Fang, Wu; Lu, Fan; Li, Ang; Lu, Yi-huai; Wei, Qing-nong; Dou, Ke

    2005-09-01

    A long-path differential optical absorption spectroscopy (DOAS) system is introduced. A photodiode array is employed as the detector to replace the complicated SD detector which consists of a PMT and a slotted disk. The properties of the detector and the spectrometer unit such as offset, dark current, noise, linearity, resolution, and wavelength range were measured. This system was also tested to measure SO2 and NO2 in the atmosphere. The detection limits of this system for SO2, and NO2 over a 713 m light path were determined. PMID:16379291

  8. Improved X-ray detection and particle identification with avalanche photodiodes

    CERN Document Server

    Diepold, Marc; Machado, Jorge; Amaro, Pedro; Abdou-Ahmed, Marwan; Amaro, Fernando D; Antognini, Aldo; Biraben, François; Chen, Tzu-Ling; Covita, Daniel S; Dax, Andreas J; Franke, Beatrice; Galtier, Sandrine; Gouvea, Andrea L; Götzfried, Johannes; Graf, Thomas; Hänsch, Theodor W; Hildebrandt, Malte; Indelicato, Paul; Julien, Lucile; Kirch, Klaus; Knecht, Andreas; Kottmann, Franz; Krauth, Julian J; Liu, Yi-Wei; Monteiro, Cristina M B; Mulhauser, Françoise; Naar, Boris; Nebel, Tobias; Nez, François; Santos, José Paulo; Santos, Joaquim M F dos; Schuhmann, Karsten; Szabo, Csilla I; Taqqu, David; Veloso, João F C A; Voss, Andreas; Weichelt, Birgit; Pohl, Randolf

    2015-01-01

    Avalanche photodiodes are commonly used as detectors for low energy x-rays. In this work we report on a fitting technique used to account for different detector responses resulting from photo absorption in the various APD layers. The use of this technique results in an improvement of the energy resolution at 8.2 keV by up to a factor of 2, and corrects the timing information by up to 25 ns to account for space dependent electron drift time. In addition, this waveform analysis is used for particle identification, e.g. to distinguish between x-rays and MeV electrons in our experiment.

  9. Resilience of gated avalanche photodiodes against bright illumination attacks in quantum cryptography

    CERN Document Server

    Yuan, Z L; Shields, A J; 10.1063/1.3597221

    2011-01-01

    Semiconductor avalanche photodiodes (APDs) are commonly used for single photon detection in quantum key distribution. Recently, many attacks using bright illumination have been proposed to manipulate gated InGaAs APDs. In order to devise effective counter-measures, careful analysis of these attacks must be carried out to distinguish between incorrect operation and genuine loopholes. Here, we show that correctly-operated, gated APDs are immune to continuous-wave illumination attacks, while monitoring the photocurrent for anomalously high values is a straightforward counter-measure against attacks using temporally tailored light.

  10. Ge-Based Spin-Photodiodes for Room-Temperature Integrated Detection of Photon Helicity

    KAUST Repository

    Rinaldi, Christian

    2012-05-02

    Spin-photodiodes based on Fe/MgO/Ge(001) heterostructures are reported. These devices perform the room-temperature integrated electrical detection of the spin polarization of a photocurrent generated by circularly polarized photons with a wavelength of 1300 nm, for light pulses with intensity I 0 down to 200 μW. A forward and reverse-biased average photocurrent variation of 5.9% is measured for the complete reversal of the incident light helicity. Copyright © 2012 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  11. A photodiode-based neutral particle bolometer for characterizing charge-exchanged fast-ion behavior

    Energy Technology Data Exchange (ETDEWEB)

    Clary, R.; Smirnov, A.; Dettrick, S.; Knapp, K.; Korepanov, S.; Ruskov, E. [Tri Alpha Energy, Inc., Rancho Santa Margarita, California 92688 (United States); Heidbrink, W. W.; Zhu, Y. [University of California-Irvine, Irvine, California 92697 (United States)

    2012-10-15

    A neutral particle bolometer (NPB) has been designed and implemented on Tri Alpha Energy's C-2 device in order to spatially and temporally resolve the charge-exchange losses of fast-ion populations originating from neutral beam injection into field-reversed configuration plasmas. This instrument employs a silicon photodiode as the detection device with an integrated tungsten filter coating to reduce sensitivity to light radiation. Here we discuss the technical aspects and calibration of the NPB, and report typical NPB measurement results of wall recycling effects on fast-ion losses.

  12. A photodiode-based neutral particle bolometer for characterizing charge-exchanged fast-ion behavior.

    Science.gov (United States)

    Clary, R; Smirnov, A; Dettrick, S; Knapp, K; Korepanov, S; Ruskov, E; Heidbrink, W W; Zhu, Y

    2012-10-01

    A neutral particle bolometer (NPB) has been designed and implemented on Tri Alpha Energy's C-2 device in order to spatially and temporally resolve the charge-exchange losses of fast-ion populations originating from neutral beam injection into field-reversed configuration plasmas. This instrument employs a silicon photodiode as the detection device with an integrated tungsten filter coating to reduce sensitivity to light radiation. Here we discuss the technical aspects and calibration of the NPB, and report typical NPB measurement results of wall recycling effects on fast-ion losses. PMID:23126887

  13. Removal Natural Organic Matter (NOM in Peat Water from Wetland Area by Coagulation-Ultrafiltration Hybrid Process with Pretreatment Two-Stage Coagulation

    Directory of Open Access Journals (Sweden)

    Mahmud Mahmud

    2013-11-01

    Full Text Available The primary problem encountered in the application of membrane technology was membrane fouling. During this time, hybrid process by coagulation-ultrafiltration in drinking water treatment that has been conducted by some research, using by one-stage coagulation. The goal of this research was to investigate the effect of two-stage coagulation as a pretreatment towards performance of the coagulation-ultrafiltration hybrid process for removal NOM in the peat water. Coagulation process, either with the one-stage or two-stage coagulation was very good in removing charge hydrophilic fraction, i.e. more than 98%. NOM fractions of the peat water, from the most easily removed by the two-stage coagulation and one-stage coagulation process was charged hydrophilic>strongly hydrophobic>weakly hydrophobic>neutral hydrophilic. The two-stage coagulation process could removed UV254 and colors with a little better than the one-stage coagulation at the optimum coagulant dose. Neutral hydrophilic fraction of peat water NOM was the most influential fraction of UF membrane fouling. The two-stage coagulation process better in removing the neutral hidrophilic fraction, while removing of the charged hydrophilic, strongly hydrophobic and weakly hydrophobic similar to the one-stage coagulation. Hybrid process by pretreatment with two-stage coagulation, beside can increased removal efficiency of UV254 and color, also can reduced fouling rate of the ultrafiltration membraneIt must not exceed 250 words, contains a brief summary of the text, covering the whole manuscript without being too elaborate on every section. Avoid any abbreviation, unless it is a common knowledge or has been previously stated.

  14. Far-infrared electroluminescence characteristics of an Si-based photodiode under a forward DC bias current

    Institute of Scientific and Technical Information of China (English)

    Xiao Wen-Bo; He Xing-Dao; Zhang Zhi-Min; Gao Yi-Qing; Liu Jiang-Tao

    2012-01-01

    At room temperature,the bias dependence of a far-infrared electroluminescence image of a photodiode is investigated in the dark condition.The results show that the electroluminescence image can be used to detect defects in the photodiode.Additionally,it is found that the electroluminescence intensity has a power law dependence on the dc bias current.The photodiode ideality factor could be obtained by a fitting a relationship between the electroluminescence intensity and the bias current.The device defect levels will be easily determined according to the infrared image and the extracted ideality factor value.This work is of guiding significance for current solar cell testing and research.

  15. Far-infrared electroluminescence characteristics of an Si-based photodiode under a forward DC bias current

    International Nuclear Information System (INIS)

    At room temperature, the bias dependence of a far-infrared electroluminescence image of a photodiode is investigated in the dark condition. The results show that the electroluminescence image can be used to detect defects in the photodiode. Additionally, it is found that the electroluminescence intensity has a power law dependence on the dc bias current. The photodiode ideality factor could be obtained by a fitting a relationship between the electroluminescence intensity and the bias current. The device defect levels will be easily determined according to the infrared image and the extracted ideality factor value. This work is of guiding significance for current solar cell testing and research. (condensed matter: electronic structure, electrical, magnetic, and optical properties)

  16. Mechanical and thermal design of hybrid blankets

    International Nuclear Information System (INIS)

    The thermal and mechanical aspects of hybrid reactor blanket design considerations are discussed. This paper is intended as a companion to that of J. D. Lee of Lawrence Livermore Laboratory on the nuclear aspects of hybrid reactor blanket design. The major design characteristics of hybrid reactor blankets are discussed with emphasis on the areas of difference between hybrid reactors and standard fusion or fission reactors. Specific examples are used to illustrate the design tradeoffs and choices that must be made in hybrid reactor design. These examples are drawn from the work on the Mirror Hybrid Reactor

  17. Application of the hybrid approach to the benchmark dose of urinary cadmium as the reference level for renal effects in cadmium polluted and non-polluted areas in Japan

    Energy Technology Data Exchange (ETDEWEB)

    Suwazono, Yasushi, E-mail: suwa@faculty.chiba-u.jp [Department of Occupational and Environmental Medicine, Graduate School of Medicine, Chiba University, 1-8-1 Inohana, Chuoku, Chiba 260-8670 (Japan); Nogawa, Kazuhiro; Uetani, Mirei [Department of Occupational and Environmental Medicine, Graduate School of Medicine, Chiba University, 1-8-1 Inohana, Chuoku, Chiba 260-8670 (Japan); Nakada, Satoru [Safety and Health Organization, Chiba University, 1-33 Yayoicho, Inageku, Chiba 263-8522 (Japan); Kido, Teruhiko [Department of Community Health Nursing, Kanazawa University School of Health Sciences, 5-11-80 Kodatsuno, Kanazawa, Ishikawa 920-0942 (Japan); Nakagawa, Hideaki [Department of Epidemiology and Public Health, Kanazawa Medical University, 1-1 Daigaku, Uchnada, Ishikawa 920-0293 (Japan)

    2011-02-15

    Objectives: The aim of this study was to evaluate the reference level of urinary cadmium (Cd) that caused renal effects. An updated hybrid approach was used to estimate the benchmark doses (BMDs) and their 95% lower confidence limits (BMDL) in subjects with a wide range of exposure to Cd. Methods: The total number of subjects was 1509 (650 men and 859 women) in non-polluted areas and 3103 (1397 men and 1706 women) in the environmentally exposed Kakehashi river basin. We measured urinary cadmium (U-Cd) as a marker of long-term exposure, and {beta}2-microglobulin ({beta}2-MG) as a marker of renal effects. The BMD and BMDL that corresponded to an additional risk (BMR) of 5% were calculated with background risk at zero exposure set at 5%. Results: The U-Cd BMDL for {beta}2-MG was 3.5 {mu}g/g creatinine in men and 3.7 {mu}g/g creatinine in women. Conclusions: The BMDL values for a wide range of U-Cd were generally within the range of values measured in non-polluted areas in Japan. This indicated that the hybrid approach is a robust method for different ranges of cadmium exposure. The present results may contribute further to recent discussions on health risk assessment of Cd exposure.

  18. Application of the hybrid approach to the benchmark dose of urinary cadmium as the reference level for renal effects in cadmium polluted and non-polluted areas in Japan

    International Nuclear Information System (INIS)

    Objectives: The aim of this study was to evaluate the reference level of urinary cadmium (Cd) that caused renal effects. An updated hybrid approach was used to estimate the benchmark doses (BMDs) and their 95% lower confidence limits (BMDL) in subjects with a wide range of exposure to Cd. Methods: The total number of subjects was 1509 (650 men and 859 women) in non-polluted areas and 3103 (1397 men and 1706 women) in the environmentally exposed Kakehashi river basin. We measured urinary cadmium (U-Cd) as a marker of long-term exposure, and β2-microglobulin (β2-MG) as a marker of renal effects. The BMD and BMDL that corresponded to an additional risk (BMR) of 5% were calculated with background risk at zero exposure set at 5%. Results: The U-Cd BMDL for β2-MG was 3.5 μg/g creatinine in men and 3.7 μg/g creatinine in women. Conclusions: The BMDL values for a wide range of U-Cd were generally within the range of values measured in non-polluted areas in Japan. This indicated that the hybrid approach is a robust method for different ranges of cadmium exposure. The present results may contribute further to recent discussions on health risk assessment of Cd exposure.

  19. High-speed imaging and wavefront sensing with an infrared avalanche photodiode array

    CERN Document Server

    Baranec, Christoph; Riddle, Reed; Hall, Donald; Jacobson, Shane; Law, Nicholas M; Chun, Mark

    2015-01-01

    Infrared avalanche photodiode arrays represent a panacea for many branches of astronomy by enabling extremely low-noise, high-speed and even photon-counting measurements at near-infrared wavelengths. We recently demonstrated the use of an early engineering-grade infrared avalanche photodiode array that achieves a correlated double sampling read noise of 0.73 e- in the lab, and a total noise of 2.52 e- on sky, and supports simultaneous high-speed imaging and tip-tilt wavefront sensing with the Robo-AO visible-light laser adaptive optics system at the Palomar Observatory 1.5-m telescope. We report here on the improved image quality achieved simultaneously at visible and infrared wavelengths by using the array as part of an image stabilization control-loop with adaptive-optics sharpened guide stars. We also discuss a newly enabled survey of nearby late M-dwarf multiplicity as well as future uses of this technology in other adaptive optics and high-contrast imaging applications.

  20. Light emitting diode, photodiode-based fluorescence detection system for DNA analysis with microchip electrophoresis.

    Science.gov (United States)

    Hall, Gordon H; Glerum, D Moira; Backhouse, Christopher J

    2016-02-01

    Electrophoretic separation of fluorescently end-labeled DNA after a PCR serves as a gold standard in genetic diagnostics. Because of their size and cost, instruments for this type of analysis have had limited market uptake, particularly for point-of-care applications. This might be changed through a higher level of system integration and lower instrument costs that can be realized through the use of LEDs for excitation and photodiodes for detection--if they provide sufficient sensitivity. Here, we demonstrate an optimized microchip electrophoresis instrument using polymeric fluidic chips with fluorescence detection of end-labeled DNA with a LOD of 0.15 nM of Alexa Fluor 532. This represents orders of magnitude improvement over previously reported instruments of this type. We demonstrate the system with an electrophoretic separation of two PCR products and their respective primers. We believe that this is the first LED-induced fluorescence microchip electrophoresis system with photodiode-based detection that could be used for standard applications of PCR and electrophoresis. PMID:26412502

  1. Development of Gated Pinned Avalanche Photodiode Pixels for High-Speed Low-Light Imaging

    Directory of Open Access Journals (Sweden)

    Tomislav Resetar

    2016-08-01

    Full Text Available This work explores the benefits of linear-mode avalanche photodiodes (APDs in high-speed CMOS imaging as compared to different approaches present in literature. Analysis of APDs biased below their breakdown voltage employed in single-photon counting mode is also discussed, showing a potentially interesting alternative to existing Geiger-mode APDs. An overview of the recently presented gated pinned avalanche photodiode pixel concept is provided, as well as the first experimental results on a 8 × 16 pixel test array. Full feasibility of the proposed pixel concept is not demonstrated; however, informative data is obtained from the sensor operating under −32 V substrate bias and clearly exhibiting wavelength-dependent gain in frontside illumination. The readout of the chip designed in standard 130 nm CMOS technology shows no dependence on the high-voltage bias. Readout noise level of 15 e - rms, full well capacity of 8000 e - , and the conversion gain of 75 µV / e - are extracted from the photon-transfer measurements. The gain characteristics of the avalanche junction are characterized on separate test diodes showing a multiplication factor of 1.6 for red light in frontside illumination.

  2. Development of Gated Pinned Avalanche Photodiode Pixels for High-Speed Low-Light Imaging.

    Science.gov (United States)

    Resetar, Tomislav; De Munck, Koen; Haspeslagh, Luc; Rosmeulen, Maarten; Süss, Andreas; Puers, Robert; Van Hoof, Chris

    2016-01-01

    This work explores the benefits of linear-mode avalanche photodiodes (APDs) in high-speed CMOS imaging as compared to different approaches present in literature. Analysis of APDs biased below their breakdown voltage employed in single-photon counting mode is also discussed, showing a potentially interesting alternative to existing Geiger-mode APDs. An overview of the recently presented gated pinned avalanche photodiode pixel concept is provided, as well as the first experimental results on a 8 × 16 pixel test array. Full feasibility of the proposed pixel concept is not demonstrated; however, informative data is obtained from the sensor operating under -32 V substrate bias and clearly exhibiting wavelength-dependent gain in frontside illumination. The readout of the chip designed in standard 130 nm CMOS technology shows no dependence on the high-voltage bias. Readout noise level of 15 e - rms, full well capacity of 8000 e - , and the conversion gain of 75 µV / e - are extracted from the photon-transfer measurements. The gain characteristics of the avalanche junction are characterized on separate test diodes showing a multiplication factor of 1.6 for red light in frontside illumination. PMID:27537882

  3. Interplanetary space weather effects on Lunar Reconnaissance Orbiter avalanche photodiode performance

    Science.gov (United States)

    Clements, E. B.; Carlton, A. K.; Joyce, C. J.; Schwadron, N. A.; Spence, H. E.; Sun, X.; Cahoy, K.

    2016-05-01

    Space weather is a major concern for radiation-sensitive space systems, particularly for interplanetary missions, which operate outside of the protection of Earth's magnetic field. We examine and quantify the effects of space weather on silicon avalanche photodiodes (SiAPDs), which are used for interplanetary laser altimeters and communications systems and can be sensitive to even low levels of radiation (less than 50 cGy). While ground-based radiation testing has been performed on avalanche photodiode (APDs) for space missions, in-space measurements of SiAPD response to interplanetary space weather have not been previously reported. We compare noise data from the Lunar Reconnaissance Orbiter (LRO) Lunar Orbiter Laser Altimeter (LOLA) SiAPDs with radiation measurements from the onboard Cosmic Ray Telescope for the Effects of Radiation (CRaTER) instrument. We did not find any evidence to support radiation as the cause of changes in detector threshold voltage during radiation storms, both for transient detector noise and long-term average detector noise, suggesting that the approximately 1.3 cm thick shielding (a combination of titanium and beryllium) of the LOLA detectors is sufficient for SiAPDs on interplanetary missions with radiation environments similar to what the LRO experienced (559 cGy of radiation over 4 years).

  4. Ge on Si waveguide-integrated photodiodes for high speed and low power receivers

    Science.gov (United States)

    Virot, Léopold; Vivien, Laurent; Hartmann, Jean Michel; Fédéli, Jean-Marc; Marris-Morini, Delphine; Cassan, Eric; Baudot, Charles; Boeuf, Frédéric

    2013-05-01

    Development of fast silicon photonics integrated circuit is mainly driven by the reduction of the power consumption. As a result, photodetectors with high efficiency, high speed and low dark current are needed to reduce the global link consumption. Germanium is now considered as the ideal candidate for fully integrated receivers based on SOI substrate and CMOS-like processes. We report on low power and high speed waveguide-integrated Ge photodetectors. Butt coupled lateral PIN structure photodiodes have been fabricated by Germanium selective growth and ion implantation at the end of silicon waveguide. Three types of photodiodes are reported, with dark current as low as 6nA at 1V reverse bias, optical bandwidth over 40GHz at zero bias and responsivity up to 0.8A/W at a wavelength of 1550nm. Such devices are suitable for data rate over 40Gbps and can be easily integrated with other photonic devices to fabricate wafer scale integrated circuits for datacom and telecom applications.

  5. Photon-counting monolithic avalanche photodiode arrays for the super collider

    International Nuclear Information System (INIS)

    In fiber tracking, calorimetry, and other high energy and nuclear physics experiments, the need arises to detect an optical signal consisting of a few photons (in some cases a single photoelectron) with a detector insensitive to magnetic fields. Previous attempts to detect a single photoelectron have involved avalanche photodiodes (APDs) operated in the Geiger mode, the visible light photon counter, and a photomultiplier tube with an APD as the anode. In this paper it is demonstrated that silicon APDs, biased below the breakdown voltage, can be used to detect a signal of a few photons with conventional pulse counting circuitry at room temperature. Moderate cooling, it is further argued, could make it possible to detect a single photoelectron. Monolithic arrays of silicon avalanche photodiodes fabricated by Radiation Monitoring Devices, Inc. (RMD) were evaluated for possible use in the Super Collider detector systems. Measurements on 3 element x 3 element (2 mm pitch) APD arrays, using pulse counting circuitry with a charge sensitive amplifier (CSA) and a Gaussian filter, are reported and found to conform to a simple noise model. The model is used to obtain the optimal operating point. Experimental results are described in Section II, modeling results in Section III, and the conclusions are summarized in Section IV

  6. Modelling and measurement of the absolute level of power radiated by antenna integrated THz UTC photodiodes.

    Science.gov (United States)

    Natrella, Michele; Liu, Chin-Pang; Graham, Chris; van Dijk, Frederic; Liu, Huiyun; Renaud, Cyril C; Seeds, Alwyn J

    2016-05-30

    We determine the output impedance of uni-travelling carrier (UTC) photodiodes at frequencies up to 400 GHz by performing, for the first time, 3D full-wave modelling of detailed UTC photodiode structures. In addition, we demonstrate the importance of the UTC impedance evaluation, by using it in the prediction of the absolute power radiated by an antenna integrated UTC, over a broad frequency range and confirming the predictions by experimental measurements up to 185 GHz. This is done by means of 3D full-wave modelling and is only possible since the source (UTC) to antenna impedance match is properly taken into account. We also show that, when the UTC-to-antenna coupling efficiency is modelled using the classical junction-capacitance/series-resistance concept, calculated and measured levels of absolute radiated power are in substantial disagreement, and the maximum radiated power is overestimated by a factor of almost 7 dB. The ability to calculate the absolute emitted power correctly enables the radiated power to be maximised through optimisation of the UTC-to-antenna impedance match. PMID:27410104

  7. Enabling accurate photodiode detection of multiple optical traps by spatial filtering

    Science.gov (United States)

    Ott, Dino; Reihani, S. Nader S.; Oddershede, Lene B.

    2014-09-01

    Dual and multiple beam optical tweezers allow for advanced trapping geometries beyond single traps, however, these increased manipulation capabilities, usually complicate the detection of position and force. The accuracy of position and force measurements is often compromised by crosstalk between the detected signals, this crosstalk leading to a systematic error on the measured forces and distances. In dual-beam optical trapping setups, the two traps are typically orthogonal polarized and crosstalk can be minimized by inserting polarization optics in front of the detector, however, this method is not perfect because of the de-polarization of the trapping beam introduced by the required high numerical aperture optics. Moreover, the restriction to two orthogonal polarisation states limits the number of detectable traps to two. Here, we present an easy-to-implement simple method to efficiently eliminate cross-talk in dual beam setups.1 The technique is based on spatial filtering and is highly compatible with standard back-focal-plane photodiode based detection. The reported method significantly improves the accuracy of force-distance measurements, e.g., of single molecules, hence providing much more scientific value for the experimental efforts. Furthermore, it opens the possibility for fast and simultaneous photodiode based detection of multiple holographically generated optical traps.

  8. Narrowband light detection via internal quantum efficiency manipulation of organic photodiodes.

    Science.gov (United States)

    Armin, Ardalan; Jansen-van Vuuren, Ross D; Kopidakis, Nikos; Burn, Paul L; Meredith, Paul

    2015-01-01

    Spectrally selective light detection is vital for full-colour and near-infrared (NIR) imaging and machine vision. This is not possible with traditional broadband-absorbing inorganic semiconductors without input filtering, and is yet to be achieved for narrowband absorbing organic semiconductors. We demonstrate the first sub-100 nm full-width-at-half-maximum visible-blind red and NIR photodetectors with state-of-the-art performance across critical response metrics. These devices are based on organic photodiodes with optically thick junctions. Paradoxically, we use broadband-absorbing organic semiconductors and utilize the electro-optical properties of the junction to create the narrowest NIR-band photoresponses yet demonstrated. In this context, these photodiodes outperform the encumbent technology (input filtered inorganic semiconductor diodes) and emerging technologies such as narrow absorber organic semiconductors or quantum nanocrystals. The design concept allows for response tuning and is generic for other spectral windows. Furthermore, it is material-agnostic and applicable to other disordered and polycrystalline semiconductors. PMID:25721323

  9. Measurement of 222Rn diffusion through sandy soil with solar cells photodiodes as the detector

    International Nuclear Information System (INIS)

    An experimental system was developed to study the diffusion rate of radon (222Rn) gas through porous media as a function of soil porosity/grain size and soil water content. Columns with different grain sizes, soil water content and soil depths were used. The system used solar cells photodiodes as alpha (α) detectors. This new detector is highly efficient and low cost compared to other known detectors. Soil water content was found to be the most dominant factor affecting the 222Rn diffusion rate. A maximum diffusion rate value of (6.5 ± 0.07) × 10−6 m2/s was found in dry conditions. The minimum diffusion value of less than (3.9 ± 0.14) × 10−7 m2/s was found in 2% soil water content. The experimental results were compared with theoretical calculations done with the “GREEN equation”. Two discrepancies were observed: the time to equilibrium state in the measurements was longer compare to the calculated values and the α count rates were lower in the experiment compared with the theoretical calculations. These results can be explained by the differences in the system geometry. - Highlights: ► A new experimental system was developed to study the diffusion rate of radon gas. ► Developing a new prototype of alpha detector based on solar photodiodes. ► Measuring radon diffusion rates and as a function of soil parameters.

  10. 3D avalanche multiplication in Si-Ge lateral avalanche photodiodes

    Science.gov (United States)

    Jamil, Erum; Hayat, Majeed M.; Davids, Paul S.; Camacho, Ryan M.

    2016-05-01

    Si-Ge lateral avalanche photodiodes (Si-Ge LAPDs) are promising devices for single photon detection, but they also have technology challenges. Si-Ge LAPDs are CMOS compatible and capable of detecting photons near the 1550 nm telecommunications bands. However, the Si-Ge LAPD exhibits a unique avalanche multiplication process in silicon, where the electrons and holes follow curved paths in three-dimensional space. Traditional models for the analysis of the avalanche multiplication process assume one-dimensional paths for the carriers that undergo the chains of impact ionizations; therefore, they are not suitable for analyzing the avalanche properties of Si-Ge LAPDs. In this paper, the statistics of the avalanche process in the Si-Ge LAPD are modeled analytically using a method that was recently developed by our group for understanding the avalanche multiplication in nanopillar, core-shell GaAs avalanche photodiodes, for which the electric field is non-uniform in magnitude and direction. Specifically, the calculated mean avalanche gain and the excess noise are presented for the Si-Ge LAPD device. It is also shown that the avalanche characteristics depend upon the specific avalanche path taken by the carrier, which depends, in turn, on the lateral location where each photon is absorbed in the Ge absorber. This property can be exploited to achieve reduced excess noise as well as wavelength-sensitive single-photon detection.

  11. Accelerated aging tests of radiation damaged lasers and photodiodes for the CMS tracker optical links

    CERN Document Server

    Gill, K; Batten, J; Cervelli, G; Grabit, R; Jensen, F; Troska, Jan K; Vasey, F

    1999-01-01

    The combined effects of radiation damage and accelerated ageing in COTS lasers and p-i-n photodiodes are presented. Large numbers of these devices are employed in future High Energy Physics experiments and it is vital that these devices are confirmed to be sufficiently robust in terms of both radiation resistance and reliability. Forty 1310 nm InGaAsP edge-emitting lasers (20 irradiated) and 30 InGaAs p- i-n photodiodes (19 irradiated) were aged for 4000 hours at 80 degrees C with periodic measurements made of laser threshold and efficiency, in addition to p-i-n leakage current and photocurrent. There were no sudden failures and there was very little wearout- related degradation in either unirradiated or irradiated sample groups. The results suggest that the tested devices have a sufficiently long lifetime to operate for at least 10 years inside the Compact Muon Solenoid experiment despite being exposed to a harsh radiation environment. (13 refs).

  12. Noise Temperature Characteristics and Gain-control of Avalanche Photodiodes for Laser Radar

    Institute of Scientific and Technical Information of China (English)

    CAI Xi-ping; SHANG Hong-Bo; BAI Ji-yuan; YANG Shuang; WANG Li-na

    2008-01-01

    Avalanche photodiodes(APDs) are promising light sensors with high quantum efficiency and low noise. It has been extensively used in radiation detection, laser radar and other weak signal detection fields. Unlike other photodiodes, APD is a very sensitive light detector with very high internal gain. The basic theory shows that the gain of APD is related to the temperature. The internal gain fluctuates with the variation of temperature. Investigated was the influence of the variation of the gain induced by the fluctuation of temperature on the output from APD for a very weak laser pulse input in laser radar. An active reverse-biased voltage compensation method is used to stabilize the gain of APD. An APD model is setup to simulate the detection of light pulse signal. The avalanche process, various noises and temperature's effect are all included in the model. Our results show that for the detection of weak light signal such as in laser radar, even a very small fluctuation of temperature could cause a great effect on APD's gain. The results show that the signal-to-noise ratio of the APD's output could be improved effectively with the active gain-control system.

  13. Design and evaluation of a 2D array PIN photodiode bump bonded to readout IC for the low energy x-ray detector.

    Science.gov (United States)

    Yuk, Sunwoo; Park, Shin-Woong; Yi, Yun

    2006-01-01

    A 2D array radiation sensor, consisting of an array of PIN photodiodes bump bonded to readout integrated circuit (IC), has been developed for operation with low energy X-rays. The PIN photodiode array and readout IC for this system have been fabricated. The main performance measurements are the following: a few pA-scale leakage current, 350 pF junction capacitance, 30 microm-depth depletion layer and a 250 microm intrinsic layer at zero bias. This PIN photodiode array and readout IC were fabricated using a PIN photodiode process and standard 0.35 microm CMOS technology, respectively. The readout circuit is operated from a 3.3 V single power supply. Finally, a 2D array radiation sensor has been developed using bump bonding between the PIN photodiode and the readout electronics. PMID:17946079

  14. Hybrid Ant Colony Optimization for Real-World Delivery Problems Based on Real Time and Predicted Traffic in Wide Area Road Network

    Directory of Open Access Journals (Sweden)

    Junichi Ochiai

    2014-02-01

    Full Text Available This paper presents a solution to real-world delive ry problems for home delivery services where a large number of roads exist in cities and the tra ffic on the roads rapidly changes with time. The methodology for finding the shortest-travel-tim e tour includes a hybrid meta-heuristic that combines ant colony optimization with Dijkstra’s al gorithm, a search technique that uses both real-time traffic and predicted traffic, and a way to use a real-world road map and measured traffic in Japan. Experimental results using a map of central Tokyo and historical traffic data indicate that the proposed method can find a better solution than conventional methods.

  15. Optimization of a guard ring structure in Geiger-mode avalanche photodiodes fabricated at National NanoFab Center

    Science.gov (United States)

    Lim, K. T.; Kim, H.; Cho, M.; Kim, Y.; Kim, C.; Kim, M.; Lee, D.; Kang, D.; Yoo, H.; Park, K.; Sul, W. S.; Cho, G.

    2016-01-01

    A typical Geiger-mode avalanche photodiode (G-APD) contains a guard ring that protects the structure from having an edge breakdown due to the lowering of electric fields at junction curvatures. In this contribution, G-APDs with a virtual guard ring (vGR) merged with n-type diffused guard ring (nGR) in various sizes were studied to find the optimal design for G-APDs fabricated at National NanoFab Center (NNFC) . The sensors were fabricated via a customized CMOS process with a micro-cell size of 65× 65 μm2 on a 200 mm p-type epitaxial layer wafer. I-V characteristic curves for proposed structures were measured on a wafer-level with an auto probing system and plotted together to compare their performance. A vGR width of 1.5 μm and a nGR width of 1.5 μm with an overlapping between vGR and nGR of 1.5 μm showed the lowest leakage current before the breakdown voltage while suppressing the edge breakdown. Furthermore, the current level of the lowest-leakage-current structure was as low as that of only vGR with a width of 2.0 μm, indicating that the structure is also area efficient. Based on these results, the design with vGR, nGR, and OL with width of 1.5 μm is determined to be the optimal structure for G-APDs fabricated at NNFC.

  16. Recent progress of avalanche photodiodes in high-resolution X-rays and γ-rays detection

    International Nuclear Information System (INIS)

    We have studied the performance of large area avalanche photodiodes (APDs) recently developed by Hamamatsu Photonics K.K, in high-resolution X-rays and γ-rays detections. We show that reach-through APD can be an excellent soft X-ray detector operating at room temperature or moderately cooled environment. We obtain the best energy resolution ever achieved with APDs, 6.4% for 5.9keV X-rays, and obtain the energy threshold as low as 0.5keV measured at -20-bar C. Thanks to its fast timing response, signal carriers in the APD device are collected within a short time interval of 1.9ns (FWHM). This type of APDs can therefore be used as a low-energy, high-counting particle monitor onboard the forthcoming Pico-satellite Cute1.7. As a scintillation photon detector, reverse-type APDs have a good advantage of reducing the dark noise significantly. The best FWHM energy resolutions of 9.4±0.3% and 4.9±0.2% were obtained for 59.5 and 662keV γ-rays, respectively, as measured with a CsI(Tl) crystal. Combination of APDs with various other scintillators (BGO, GSO, and YAP) also showed better results than that obtained with a photomultiplier tube (PMT). These results suggest that APD could be a promising device for replacing traditional PMT usage in some applications. In particular 2-dim APD array, which we present in this paper, will be a promising device for a wide-band X-ray and γ-ray imaging detector in future space research and nuclear medicine

  17. Optimization of a guard ring structure in Geiger-mode avalanche photodiodes fabricated at National NanoFab Center

    International Nuclear Information System (INIS)

    A typical Geiger-mode avalanche photodiode (G-APD) contains a guard ring that protects the structure from having an edge breakdown due to the lowering of electric fields at junction curvatures. In this contribution, G-APDs with a virtual guard ring (vGR) merged with n-type diffused guard ring (nGR) in various sizes were studied to find the optimal design for G-APDs fabricated at National NanoFab Center (NNFC) . The sensors were fabricated via a customized CMOS process with a micro-cell size of 65×65μm2 on a 200 mm p-type epitaxial layer wafer. I-V characteristic curves for proposed structures were measured on a wafer-level with an auto probing system and plotted together to compare their performance. A vGR width of 1.5 μm and a nGR width of 1.5 μm with an overlapping between vGR and nGR of 1.5 μm showed the lowest leakage current before the breakdown voltage while suppressing the edge breakdown. Furthermore, the current level of the lowest-leakage-current structure was as low as that of only vGR with a width of 2.0 μm, indicating that the structure is also area efficient. Based on these results, the design with vGR, nGR, and OL with width of 1.5 μm is determined to be the optimal structure for G-APDs fabricated at NNFC

  18. Hybrid Metaheuristics

    CERN Document Server

    2013-01-01

    The main goal of this book is to provide a state of the art of hybrid metaheuristics. The book provides a complete background that enables readers to design and implement hybrid metaheuristics to solve complex optimization problems (continuous/discrete, mono-objective/multi-objective, optimization under uncertainty) in a diverse range of application domains. Readers learn to solve large scale problems quickly and efficiently combining metaheuristics with complementary metaheuristics, mathematical programming, constraint programming and machine learning. Numerous real-world examples of problems and solutions demonstrate how hybrid metaheuristics are applied in such fields as networks, logistics and transportation, bio-medical, engineering design, scheduling.

  19. Hybrid photonic chip interferometer for embedded metrology

    Science.gov (United States)

    Kumar, P.; Martin, H.; Maxwell, G.; Jiang, X.

    2014-03-01

    Embedded metrology is the provision of metrology on the manufacturing platform, enabling measurement without the removal of the work piece. Providing closer integration of metrology upon the manufacturing platform can lead to the better control and increased throughput. In this work we present the development of a high precision hybrid optical chip interferometer metrology device. The complete metrology sensor system is structured into two parts; optical chip and optical probe. The hybrid optical chip interferometer is based on a silica-on-silicon etched integrated-optic motherboard containing waveguide structures and evanescent couplers. Upon the motherboard, electro-optic components such as photodiodes and a semiconductor gain block are mounted and bonded to provide the required functionality. The key structure in the device is a tunable laser module based upon an external-cavity diode laser (ECDL). Within the cavity is a multi-layer thin film filter which is rotated to select the longitudinal mode at which the laser operates. An optical probe, which uses a blazed diffracting grating and collimating objective lens, focuses light of different wavelengths laterally over the measurand. Incident laser light is then tuned in wavelength time to effectively sweep an `optical stylus' over the surface. Wavelength scanning and rapid phase shifting can then retrieve the path length change and thus the surface height. We give an overview of the overall design of the final hybrid photonic chip interferometer, constituent components, device integration and packaging as well as experimental test results from the current version now under evaluation.

  20. Hybrid intermediaries

    OpenAIRE

    Cetorelli, Nicola

    2014-01-01

    I introduce the concept of hybrid intermediaries: financial conglomerates that control a multiplicity of entity types active in the "assembly line" process of modern financial intermediation, a system that has become known as shadow banking. The complex bank holding companies of today are the best example of hybrid intermediaries, but I argue that financial firms from the "nonbank" space can just as easily evolve into conglomerates with similar organizational structure, thus acquiring the cap...

  1. Analysis of taxines in Taxus plant material and cell cultures by hplc photodiode array and hplc-electrospray mass spectrometry

    NARCIS (Netherlands)

    Theodoridis, G.; Laskaris, G.; Rozendaal, E.L.M.; Verpoorte, R.

    2001-01-01

    A semi-purified Taxus baccata needles extract was analysed by RP-HPLC. More than 18 taxines and cinnamates were detected by photodiode array detection and LC-MS, 10 of them being positively identified. Furthermore, 10-deacetyl baccatin III (paclitaxel's main precursor) and other taxanes were also fo

  2. A primary standard of optical power based on induced-junction silicon photodiodes operated at room temperature

    Science.gov (United States)

    Dönsberg, Timo; Sildoja, Meelis; Manoocheri, Farshid; Merimaa, Mikko; Petroff, Leo; Ikonen, Erkki

    2014-06-01

    We present the design and construction of a new compact room temperature predictable quantum efficient detector (PQED). It consists of two custom-made induced-junction photodiodes mounted in a wedge trap configuration and a window aligned at Brewster's angle for high transmission of p polarized light. The window can also be removed, in which case a dry nitrogen flow system is utilized to prevent dust contamination of the photodiodes. Measurements of individual detectors at the wavelength of 488 nm indicate that reflectance and spectral responsivity are consistent within 4 ppm and 13 ppm peak-to-peak variation, respectively, and agree with the predicted values. The spatial non-uniformity of the responsivity of the PQED is an order of magnitude lower than that of single photodiodes. The internal quantum efficiency of the photodiodes is concluded to be spatially uniform within 50 ppm. These measurement results—together with the responsivity predictable by fundamental laws of physics—provide evidence that the room temperature PQED may replace the cryogenic radiometer as a primary standard of optical power in the visible wavelength range of 380 nm to 780 nm.

  3. Optical performance of B-layer ultra-shallow-junction silicon photodiodes in the VUV spectral range

    NARCIS (Netherlands)

    Shi, L.; Sarubbi, F.; Nanver, L.K.; Kroth, U.; Gottwald, A.; Nihtianov, S.

    2010-01-01

    In recent work, a novel silicon-based photodiode technology was reported to be suitable for producing radiation detectors for 193 nm deep-ultraviolet light and for the extreme-ultraviolet (EUV) spectral range. The devices were developed and fabricated at the Delft Institute of Microsystems and Nanoe

  4. Al0.52In0.48P avalanche photodiodes for soft X-ray spectroscopy

    International Nuclear Information System (INIS)

    The performance of Al0.52In0.48P avalanche photodiodes was assessed as soft X-ray detectors at room temperature. The effect of the avalanche gain improved the energy resolution and an energy resolution (FWHM) of 682 eV is reported for 5.9 keV X-rays

  5. CsI(T1) scintillators read by photodiodes as detectors of charged particles and heavy ions at intermediate energy

    International Nuclear Information System (INIS)

    The response of a small CsI(T1) crystal coupled to silicon photodiode to light particles and heavy ions has been investigated using proton, alpha and oxigen beams up to 25 MeV/n. The use of these detectors in nuclear physics experiments with intermediate energy heavy-ion beams is envisaged

  6. Avoiding sensor blindness in Geiger mode avalanche photodiode arrays fabricated in a conventional CMOS process

    Science.gov (United States)

    Vilella, E.; Diéguez, A.

    2011-12-01

    The need to move forward in the knowledge of the subatomic world has stimulated the development of new particle colliders. However, the objectives of the next generation of colliders sets unprecedented challenges to the detector performance. The purpose of this contribution is to present a bidimensional array based on avalanche photodiodes operated in the Geiger mode to track high energy particles in future linear colliders. The bidimensional array can function in a gated mode to reduce the probability to detect noise counts interfering with real events. Low reverse overvoltages are used to lessen the dark count rate. Experimental results demonstrate that the prototype fabricated with a standard HV-CMOS process presents an increased efficiency and avoids sensor blindness by applying the proposed techniques.

  7. Practical photon number detection with electric field-modulated silicon avalanche photodiodes.

    Science.gov (United States)

    Thomas, O; Yuan, Z L; Shields, A J

    2012-01-01

    Low-noise single-photon detection is a prerequisite for quantum information processing using photonic qubits. In particular, detectors that are able to accurately resolve the number of photons in an incident light pulse will find application in functions such as quantum teleportation and linear optics quantum computing. More generally, such a detector will allow the advantages of quantum light detection to be extended to stronger optical signals, permitting optical measurements limited only by fluctuations in the photon number of the source. Here we demonstrate a practical high-speed device, which allows the signals arising from multiple photon-induced avalanches to be precisely discriminated. We use a type of silicon avalanche photodiode in which the lateral electric field profile is strongly modulated in order to realize a spatially multiplexed detector. Clearly discerned multiphoton signals are obtained by applying sub-nanosecond voltage gates in order to restrict the detector current. PMID:22273682

  8. Radiation damages of InGaAs photodiodes by high-temperature electron irradiation

    International Nuclear Information System (INIS)

    Results are presented of a detailed study of the effects of high-temperature 2-MeV electron irradiation on the performance degradation of InGaAs photodiodes. The macroscopic device performance will be correlated with the radiation-induced defects, observed by DLTS. It was found that the dark current increases after irradiation, while the photo current decreases. After irradiation, one majority electron capture level with (Ec-0.37 eV) was induced in the n-InGaAs layer, while no minority hole traps were found. Additionally, the degradation of the device performance and the introduction rate of the lattice defects decrease with increasing irradiation temperature. For a 300 deg. C irradiation, the reduction of the photo current is only 40% of the starting value. This result suggests that the creation and recovery of the radiation damage proceeds simultaneously at high temperatures

  9. Photodiode-based sensor for flame sensing and combustion-process monitoring.

    Science.gov (United States)

    Arias, Luis; Torres, Sergio; Sbarbaro, Daniel; Farias, Oscar

    2008-10-10

    A nonintrusive low-cost sensor based on silicon photodiode detectors has been designed to analyze the formation and behavior of excited CH(*) and C(2)(*) radicals in the combustion process by sensing the spectral emission of hydrocarbon flames. The sensor was validated by performing two sets of experiments for both nonconfined and confined flames. For a nonconfined oil flame, the sensor responses for the axial intensity were highly correlated with the measurements obtained with a radiometer. For confined gas flames the ratio between the signal corresponding to C(2)(*) and CH(*) was successfully correlated with the CO pollutant emissions and the combustion efficiency. These results give additional insight on how to prevent an incomplete combustion using spectral information. The fast response, the nonintrusive character, and the instantaneous measurement of the needed spectral information makes the proposed optical sensor a key element in the development of advanced control strategies for combustion processes. PMID:18846197

  10. Germanium-tin multiple quantum well on silicon avalanche photodiode for photodetection at two micron wavelength

    Science.gov (United States)

    Dong, Yuan; Wang, Wei; Lee, Shuh Ying; Lei, Dian; Gong, Xiao; Khai Loke, Wan; Yoon, Soon-Fatt; Liang, Gengchiau; Yeo, Yee-Chia

    2016-09-01

    We report the demonstration of a germanium-tin multiple quantum well (Ge0.9Sn0.1 MQW)-on-Si avalanche photodiode (APD) for light detection near the 2 μm wavelength range. The measured spectral response covers wavelengths from 1510 to 2003 nm. An optical responsivity of 0.33 A W‑1 is achieved at 2003 nm due to the internal avalanche gain. In addition, a thermal coefficient of breakdown voltage is extracted to be 0.053% K‑1 based on the temperature-dependent dark current measurement. As compared to the traditional 2 μm wavelength APDs, the Si-based APD is promising for its small excess noise factor, less stringent demand on temperature stability, and its compatibility with silicon technology.

  11. Scintillator-photodiode type detectors for multi-energy scanning introscopy

    CERN Document Server

    Ryzhikov, V D; Kozin, D N; Lisetskaya, E K; Opolonin, A D; Svishch, V M; Kulik, T V

    2002-01-01

    Results of experimental studies of detector arrays S-PD (scintillator-photodiode) and PRD (scintillator-photoreceiving device) used for X-ray digital radiography have shown that there exist further possibilities to increase spatial resolution of this system up to 2-3 line pairs per mm. Theoretical analysis and experimental studies show that the two-energy detection method not only allows one to detect organics on the background of metal, but also substantially increases (by 3-5 times) the detection ability of the system as a whole, especially if parameters of the S-PD pair are optimized, in particular, when ZnSe(Te) is used in the low-energy circuit. A possibility to distinguish, in principle, between substances with insignificant differences in atomic number has been theoretically proven -- by transition to multi-energy radiography. 3D-imaging has been realized using S-PD detector arrays.

  12. Measurement-based characterization of multipixel avalanche photodiodes for scintillating detectors

    CERN Document Server

    Dziewiecki, M

    2012-01-01

    Multipixel avalanche photodiodes (MAPD) are recently gaining popularity in high energy physics experiments as an attractive replacement for photomultiplier tubes, which have been extensively used for many years as a part of various scintillating detectors. Their low price, small dimensions and another features facilitating their use (like mechanical shock resistance, magnetic field immunity or moderate supply voltage) make the MAPDs a good choice for commercial use as well, what is reflected in growing number of producers as well as MAPD models available on the market. This dissertation presents Author’s experience with MAPD measurements and modelling, gained during his work on the T2K (Tokai-to-Kamioka) long-baseline neutrino experiment, carried out by an international collaboration in Japan. First, operation principle of the MAPD, definitions of various parameters and measurement methods are discussed. Then, a device for large-scale MAPD measurements and related data processing methods are described. Fina...

  13. Plasmonic field confinement for separate absorption-multiplication in InGaAs nanopillar avalanche photodiodes

    Science.gov (United States)

    Farrell, Alan C.; Senanayake, Pradeep; Hung, Chung-Hong; El-Howayek, Georges; Rajagopal, Abhejit; Currie, Marc; Hayat, Majeed M.; Huffaker, Diana L.

    2015-12-01

    Avalanche photodiodes (APDs) are essential components in quantum key distribution systems and active imaging systems requiring both ultrafast response time to measure photon time of flight and high gain to detect low photon flux. The internal gain of an APD can improve system signal-to-noise ratio (SNR). Excess noise is typically kept low through the selection of material with intrinsically low excess noise, using separate-absorption-multiplication (SAM) heterostructures, or taking advantage of the dead-space effect using thin multiplication regions. In this work we demonstrate the first measurement of excess noise and gain-bandwidth product in III-V nanopillars exhibiting substantially lower excess noise factors compared to bulk and gain-bandwidth products greater than 200 GHz. The nanopillar optical antenna avalanche detector (NOAAD) architecture is utilized for spatially separating the absorption region from the avalanche region via the NOA resulting in single carrier injection without the use of a traditional SAM heterostructure.

  14. Avalanche photodiodes operating parameter optimization for the Frascati Tokamak Upgrade Thomson scattering system

    International Nuclear Information System (INIS)

    Measured figures (linearity, avalanche gain, frequency response, and noise) of the avalanche photodiodes (APD) detectors used on the FTU Thomson scattering system (FTU-TS) are reported. This investigation on the APD figures is motivated by the necessity of knowing their values over a wide range of input signals, and also of checking the validity of McIntyre model of APD noise, since using this model the experimental signal-to-noise ratio is calculated. From the noise analysis, a method of optimization of the detection system sensitivity is derived, leading to the optimization of the signal-to-noise ratio over the entire FTU-TS system. copyright 1997 American Institute of Physics

  15. Speed optimized linear-mode high-voltage CMOS avalanche photodiodes with high responsivity.

    Science.gov (United States)

    Enne, R; Steindl, B; Zimmermann, H

    2015-10-01

    Two different speed optimized avalanche photodiodes (APDs) fabricated in a 0.35 μm standard high-voltage (HV) complementary metal-oxide-semiconductor (CMOS) process with a high unamplified responsivity (avalanche gain M=1) of 0.41 A/W at 670 nm are presented. These APDs differ regarding the effective doping of the deep p well (90% and 75%), using lateral well modulation doping. Compared to the -3  dB bandwidth of the unmodulated APD with 100% doping (850 MHz), this optimization leads to an improved bandwidth of 1.02 and 1.25 GHz for the 75% APD and 90% APD, respectively, both at a gain of M=50. PMID:26421541

  16. Mechanisms of the degradation of Schottky-barrier photodiodes based on ZnS single crystals

    Energy Technology Data Exchange (ETDEWEB)

    Korsunska, N. E.; Shulga, E. P.; Stara, T. R., E-mail: stara-t@ukr.net; Litvin, P. M.; Bondarenko, V. A. [National Academy of Sciences of Ukraine, Lashkarev Institute of Semiconductor Physics (Ukraine)

    2016-01-15

    The effect of ultraviolet (UV) illumination on the electrical and spectral characteristics of Schottky-barrier photodiodes based on ZnS single crystals is studied. It is found that irradiation deteriorates their photosensitivity and changes the current–voltage and capacitance–voltage characteristics and the surface profile of the blocking electrode. It is shown that the main reason for a decrease in the photosensitivity of the diodes is the photoinduced drift of mobile donors in the electric field of the barrier. This drift depends on the crystallographic orientation of the surface being irradiated. Another photoinduced process observed in the diodes is photolysis of the ZnS crystal. This process mainly determines the change in the electrical characteristics of the diodes and in the surface profile of the electrode at an insignificant change in the photosensitivity.

  17. A method to precisely identify the afterpulses when using the S9717 avalanche photodiode

    Science.gov (United States)

    Rusu, Alexandru; Rusu, Lucian

    2015-12-01

    The detection ratio of an avalanche photodiode (APD) biased in Geiger-mode increases versus the excess voltage; the afterpulsing rate increases too. The last one can be reduced by inserting an artificial dead time and accepting a lower measuring top rate. So, in order to tune a single-photon detector system, it is necessary to exactly identify afterpulses and measure their rate; the experimental results are presented. When using the S9717 APD in Geiger-mode, the cathode to ground voltage waveform reveals the existence of a particular sequence of pulses: a usual one followed, within 1μs, by a least one appearing to have been generated for negative excess voltage values. All these characteristics are the signature of the afterpulsing generation. Based on this observation, we were able to precisely measure the afterpulsing rate.

  18. Pixelated Geiger-Mode Avalanche Photo-Diode Characterization through Dark Current Measurement

    CERN Document Server

    Amaudruz, Pierre-André; Gilhully, Colleen; Goertzen, Andrew; James, Lloyd; Kozlowski, Piotr; Retière, Fabrice; Shams, Ehsan; Sossi, Vesna; Stortz, Greg; Thiessen, Jonathan D; Thompson, Christopher J

    2013-01-01

    PIXELATED geiger-mode avalanche photodiodes(PPDs), often called silicon photomultipliers (SiPMs) are emerging as an excellent replacement for traditional photomultiplier tubes (PMTs) in a variety of detectors, especially those for subatomic physics experiments, which requires extensive test and operation procedures in order to achieve uniform responses from all the devices. In this paper, we show for two PPD brands, Hamamatsu MPPC and SensL SPM, that the dark noise rate, breakdown voltage and rate of correlated avalanches can be inferred from the sole measure of dark current as a function of operating voltage, hence greatly simplifying the characterization procedure. We introduce a custom electronics system that allows measurement for many devices concurrently, hence allowing rapid testing and monitoring of many devices at low cost. Finally, we show that the dark current of Hamamastu Multi-Pixel Photon Counter (MPPC) is rather independent of temperature at constant operating voltage, hence the current measure...

  19. A method to precisely identify the afterpulses when using the S9717 avalanche photodiode

    Energy Technology Data Exchange (ETDEWEB)

    Rusu, Alexandru, E-mail: alrusu@nipne.ro; Rusu, Lucian [“Horia Hulubei” National Institute for Physics and Nuclear Engineering, Reactorului Street, No. 34, City Măgurele, jud. Ilfov, POB 077125 (Romania)

    2015-12-07

    The detection ratio of an avalanche photodiode (APD) biased in Geiger-mode increases versus the excess voltage; the afterpulsing rate increases too. The last one can be reduced by inserting an artificial dead time and accepting a lower measuring top rate. So, in order to tune a single-photon detector system, it is necessary to exactly identify afterpulses and measure their rate; the experimental results are presented. When using the S9717 APD in Geiger-mode, the cathode to ground voltage waveform reveals the existence of a particular sequence of pulses: a usual one followed, within 1μs, by a least one appearing to have been generated for negative excess voltage values. All these characteristics are the signature of the afterpulsing generation. Based on this observation, we were able to precisely measure the afterpulsing rate.

  20. Analysis of genetically modified organisms by pyrosequencing on a portable photodiode-based bioluminescence sequencer.

    Science.gov (United States)

    Song, Qinxin; Wei, Guijiang; Zhou, Guohua

    2014-07-01

    A portable bioluminescence analyser for detecting the DNA sequence of genetically modified organisms (GMOs) was developed by using a photodiode (PD) array. Pyrosequencing on eight genes (zSSIIb, Bt11 and Bt176 gene of genetically modified maize; Lectin, 35S-CTP4, CP4EPSPS, CaMV35S promoter and NOS terminator of the genetically modified Roundup ready soya) was successfully detected with this instrument. The corresponding limit of detection (LOD) was 0.01% with 35 PCR cycles. The maize and soya available from three different provenances in China were detected. The results indicate that pyrosequencing using the small size of the detector is a simple, inexpensive, and reliable way in a farm/field test of GMO analysis. PMID:24518318

  1. Spray coated indium-tin-oxide-free organic photodiodes with PEDOT:PSS anodes

    Directory of Open Access Journals (Sweden)

    Morten Schmidt

    2014-10-01

    Full Text Available In this paper we report on Indium Tin Oxide (ITO-free spray coated organic photodiodes with an active layer consisting of a poly(3-hexylthiophen (P3HT and [6,6]-phenyl-C61-butyric acid methyl ester (PCBM blend and patterned poly(3,4-ethylenedioxythiophene:poly(styrenesulfonate (PEDOT:PSS electrodes. External quantum efficiency and current voltage characteristics under illuminated and dark conditions as well as cut-off frequencies for devices with varying active and hole conducting layer thicknesses were measured in order to characterize the fabricated devices. 60% quantum efficiency as well as nearly four orders of magnitude on-off ratios have been achieved. Those values are comparable with standard ITO devices.

  2. Measurement of charge transfer potential barrier in pinned photodiode CMOS image sensors

    Science.gov (United States)

    Chen, Cao; Bing, Zhang; Junfeng, Wang; Longsheng, Wu

    2016-05-01

    The charge transfer potential barrier (CTPB) formed beneath the transfer gate causes a noticeable image lag issue in pinned photodiode (PPD) CMOS image sensors (CIS), and is difficult to measure straightforwardly since it is embedded inside the device. From an understanding of the CTPB formation mechanism, we report on an alternative method to feasibly measure the CTPB height by performing a linear extrapolation coupled with a horizontal left-shift on the sensor photoresponse curve under the steady-state illumination. The theoretical study was performed in detail on the principle of the proposed method. Application of the measurements on a prototype PPD-CIS chip with an array of 160 × 160 pixels is demonstrated. Such a method intends to shine new light on the guidance for the lag-free and high-speed sensors optimization based on PPD devices. Project supported by the National Defense Pre-Research Foundation of China (No. 51311050301095).

  3. Alpha particles spectrometer with photodiode PIN; Espectrometro de particulas alfa con fotodiodo PIN

    Energy Technology Data Exchange (ETDEWEB)

    Chacon R, A.; Hernandez V, R.; Hernandez D, V. M.; Vega C, H. R. [Universidad Autonoma de Zacatecas, Unidades Academicas de Estudios Nucleares e Ingenieria Electrica, Calle Cipres No. 10, Fracc. La Penuela, 09869 Zacatecas (Mexico); Ramirez G, J. [Instituto Nacional de Estadistica Geografia e Informatica, Direccion General de Innovacion y Tecnologia de Informacion, Av. Heroes de Nacozari Sur 2301, Fracc. Jardines del Parque, 20276 Aguascalientes (Mexico)], e-mail: achruiz@hotmail.com

    2009-10-15

    The radiation propagates in form of electromagnetic waves or corpuscular radiation; if the radiation energy causes ionization in environment that crosses it is considered ionizing radiation. To detect radiation several detectors types are used, if the radiation are alpha particles are used detectors proportional type or trace elements. In this work the design results, construction and tests of an alpha particles spectrometer are presented, which was designed starting from a photodiode PIN type. The system design was simulated with a code for electronic circuits. With results of simulation phase was constructed the electronic phase that is coupled to a multichannel analyzer. The resulting electronic is evaluated analyzing the electronic circuit performance before an alphas triple source and alpha radiation that produce two smoke detectors of domestic use. On the tests phase we find that the system allows obtain, in a multichannel, the pulses height spectrum, with which we calibrate the system. (Author)

  4. Characterization of total ionizing dose damage in COTS pinned photodiode CMOS image sensors

    Science.gov (United States)

    Wang, Zujun; Ma, Wuying; Huang, Shaoyan; Yao, Zhibin; Liu, Minbo; He, Baoping; Liu, Jing; Sheng, Jiangkun; Xue, Yuan

    2016-03-01

    The characterization of total ionizing dose (TID) damage in COTS pinned photodiode (PPD) CMOS image sensors (CISs) is investigated. The radiation experiments are carried out at a 60Co γ-ray source. The CISs are produced by 0.18-μm CMOS technology and the pixel architecture is 8T global shutter pixel with correlated double sampling (CDS) based on a 4T PPD front end. The parameters of CISs such as temporal domain, spatial domain, and spectral domain are measured at the CIS test system as the EMVA 1288 standard before and after irradiation. The dark current, random noise, dark signal non-uniformity (DSNU), photo response non-uniformity (PRNU), overall system gain, saturation output, dynamic range (DR), signal to noise ratio (SNR), quantum efficiency (QE), and responsivity versus the TID are reported. The behaviors of the tested CISs show remarkable degradations after radiation. The degradation mechanisms of CISs induced by TID damage are also analyzed.

  5. All-solution based device engineering of multilayer polymeric photodiodes: Minimizing dark current

    Science.gov (United States)

    Keivanidis, Panagiotis E.; Khong, Siong-Hee; Ho, Peter K. H.; Greenham, Neil C.; Friend, Richard H.

    2009-04-01

    We present photodiodes fabricated with several layers of semiconducting polymers, designed to show low dark current under reverse bias operation. Dark current minimization is achieved through the presence of additional polymer layers that reduce charge carrier injection in reverse bias, when in contact with the device electrodes. All polymer layers are deposited via spin coating and are photocross-linked for allowing further polymer layer deposition, by using a bis-fluorinated phenyl-azide photocross-linking agent. Dark current density values as low as 40 pA/mm2 are achieved with a corresponding external quantum efficiency (EQE) of 20% at a reverse bias of -0.5 V when an electron-blocking layer is used. Dark current is further reduced when both an electron- and a hole-blocking layer are used but the EQE falls significantly.

  6. A cooled avalanche photodiode detector for X-ray magnetic diffraction experiments

    CERN Document Server

    Kishimoto, S; Ito, M

    2001-01-01

    A cooled avalanche photodiode (APD) detector was developed for X-ray magnetic diffraction experiments. A stack of four silicon APDs was cooled down to 243 K by a thermoelectric cooler. The energy widths of 0.89 and 1.55 keV (FWHM) were obtained for 8.05 keV X-rays at 1x10 sup 6 s sup - sup 1 and for 16.53 keV X-rays at 2x10 sup 6 s sup - sup 1 , respectively. Test measurements of X-ray magnetic diffraction were executed using a terbium single crystal and white synchrotron radiation. A peak width of (1 0 3) reflection (5.4 keV) was roughly three times wider than that with a high-purity germanium detector.

  7. Numerical analysis of single photon detection avalanche photodiodes operated in the Geiger mode

    Science.gov (United States)

    Sugihara, K.; Yagyu, E.; Tokuda, Y.

    2006-06-01

    For a wide range of the thicknesses of the charge and the multiplication layers, detection efficiency and dark count probability are numerically investigated for GaInAs/InP single photon detection avalanche photodiodes (APD's) which are operated in the Geiger mode. Breakdown probability and dark currents are calculated to evaluate detection efficiency and dark count probability. The result shows that dark count probability can be significantly reduced by increasing the thickness of the charge layer, whereas detection efficiency is expected to decline steeply at some thickness of the charge layer. Moreover, increasing the thickness of the multiplication layer does not continue to reduce dark count probability, which increases when the multiplication layer is thicker than a critical thickness. Finally, we show a design guideline of single photon detection APD's with higher detection efficiency and lower dark count probability.

  8. p-Cu2O-shell/n-TiO2-nanowire-core heterostucture photodiodes

    Directory of Open Access Journals (Sweden)

    Hsueh Ting-Jen

    2011-01-01

    Full Text Available Abstract This study reports the deposition of cuprous oxide [Cu2O] onto titanium dioxide [TiO2] nanowires [NWs] prepared on TiO2/glass templates. The average length and average diameter of these thermally oxidized and evaporated TiO2 NWs are 0.1 to 0.4 μm and 30 to 100 nm, respectively. The deposited Cu2O fills gaps between the TiO2 NWs with good step coverage to form nanoshells surrounding the TiO2 cores. The p-Cu2O/n-TiO2 NW heterostructure exhibits a rectifying behavior with a sharp turn-on at approximately 0.9 V. Furthermore, the fabricated p-Cu2O-shell/n-TiO2-nanowire-core photodiodes exhibit reasonably large photocurrent-to-dark-current contrast ratios and fast responses.

  9. Infra-red photodiodes in Hg1-xCdxTe grown by OMVPE

    International Nuclear Information System (INIS)

    Hg1-xCdxTe layers, grown by the organometallic vapor phase epitaxy (OMVPE), are p-type with carrier concentrations around 4 x 1016/cm3 due to the Group II vacancies in them. Following a Hg saturated anneal at 220 degrees C, these layers became n-type with carrier concentrations around 4 x 1014/cm3. In order to fabricate p-n junction diodes, Hg1-xCdxTe layers were grown with a 0.5-0.8 μm thick CdTe cap. By opening windows in this CdTe cap, the underlying Hg1-xCdxTe layer was annealed in a selective manner, thus forming planar p-n junctions. The CdTe cap, which is used as the diffusion barrier for Hg during the selective anneal, also served as the junction passivant for the photodiodes. Details of device fabrication and characterization are presented in this paper

  10. High-performance SWIR sensing from colloidal quantum dot photodiode arrays

    Science.gov (United States)

    Klem, Ethan; Lewis, Jay; Gregory, Chris; Cunningham, Garry; Temple, Dorota; D'Souza, Arvind; Robinson, Ernest; Wijewarnasuriya, P. S.; Dhar, Nibir

    2013-09-01

    RTI has demonstrated a novel photodiode technology based on IR-absorbing solution-processed PbS colloidal quantum dots (CQD) that can overcome the high cost, limited spectral response, and challenges in the reduction in pixel size associated with InGaAs focal plane arrays. The most significant advantage of the CQD technology is ease of fabrication. The devices can be fabricated directly onto the ROIC substrate at low temperatures compatible with CMOS, and arrays can be fabricated at wafer scale. Further, device performance is not expected to degrade significantly with reduced pixel size. We present results for upward-looking detectors fabricated on Si substrates with sensitivity from the UV to ~1.7 μm, compare these results to InGaAs detectors, and present measurements of the CQD detectors temperature dependent dark current.

  11. High range precision laser radar system using a Pockels cell and a quadrant photodiode

    Science.gov (United States)

    Jo, Sungeun; Kong, Hong Jin; Bang, Hyochoong; Kim, Jae-Wan; Jeon, Byoung Goo

    2016-05-01

    We have proposed and demonstrated a novel technique to measure distance with high range precision. To meet the stringent requirements of a variety of applications, range precision is an important specification for laser radar systems. Range precision in conventional laser radar systems is limited by several factors, namely laser pulse width, the bandwidth of a detector, the timing resolution of the time to digital converter, shot noise and timing jitters generated by electronics. The proposed laser radar system adopts a Pockels cell and a quadrant photodiode and only measures the energy of a laser pulse to obtain range so that the effect of those factors is reduced in comparison to conventional systems. In the proposed system, the measured range precision was 5.7 mm with 100 laser pulses. The proposed method is expected to be an alternative method for laser radar system requiring high range precision in many applications.

  12. Ge/Si heterojunction photodiodes fabricated by low temperature wafer bonding.

    Science.gov (United States)

    Gity, Farzan; Daly, Aidan; Snyder, Bradley; Peters, Frank H; Hayes, John; Colinge, Cindy; Morrison, Alan P; Corbett, Brian

    2013-07-15

    We report on the photoresponse of an asymmetrically doped p(-)-Ge/n(+)-Si heterojunction photodiode fabricated by wafer bonding. Responsivities in excess of 1 A/W at 1.55 μm are measured with a 5.4 μm thick Ge layer under surface-normal illumination. Capacitance-voltage measurements show that the interfacial band structure is dependent on both temperature and light level, moving from depletion of holes at -50 °C to accumulation at 20 °C. Interface traps filled by photo-generated and thermally-generated carriers are shown to play a crucial role. Their filling alters the potential barrier height at the interface leading to increased flow of dark current and the above unity responsivity. PMID:23938577

  13. Reliable solution processed planar perovskite hybrid solar cells with large-area uniformity by chloroform soaking and spin rinsing induced surface precipitation

    International Nuclear Information System (INIS)

    A solvent soaking and rinsing method, in which the solvent was allowed to soak all over the surface followed by a spinning for solvent draining, was found to produce perovskite layers with high uniformity on a centimeter scale and with much improved reliability. Besides the enhanced crystallinity and surface morphology due to the rinsing induced surface precipitation that constrains the grain growth underneath in the precursor films, large-area uniformity with film thickness determined exclusively by the rotational speed of rinsing spinning for solvent draining was observed. With chloroform as rinsing solvent, highly uniform and mirror-like perovskite layers of area as large as 8 cm × 8 cm were produced and highly uniform planar perovskite solar cells with power conversion efficiency of 10.6 ± 0.2% as well as much prolonged lifetime were obtained. The high uniformity and reliability observed with this solvent soaking and rinsing method were ascribed to the low viscosity of chloroform as well as its feasibility of mixing with the solvent used in the precursor solution. Moreover, since the surface precipitation forms before the solvent draining, this solvent soaking and rinsing method may be adapted to spinless process and be compatible with large-area and continuous production. With the large-area uniformity and reliability for the resultant perovskite layers, this chloroform soaking and rinsing approach may thus be promising for the mass production and commercialization of large-area perovskite solar cells

  14. III-V strain layer superlattice based band engineered avalanche photodiodes (Presentation Recording)

    Science.gov (United States)

    Ghosh, Sid

    2015-08-01

    Laser detection and ranging (LADAR)-based systems operating in the Near Infrared (NIR) and Short Wave Infrared (SWIR) have become popular optical sensors for remote sensing, medical, and environmental applications. Sophisticated laser-based radar and weapon systems used for long-range military and astronomical applications need to detect, recognize, and track a variety of targets under a wide spectrum of atmospheric conditions. Infrared APDs play an important role in LADAR systems by integrating the detection and gain stages in a single device. Robust silicon-APDs are limited to visible and very near infrared region ( 3um) infrared photon detection applications. Recently, various research groups (including Ghosh et. al.) have reported SWIR and MWIR HgCdTe APDs on CdZnTe and Si substrates. However, HgCdTe APDs suffer from low breakdown fields due to material defects, and excess noise increases significantly at high electric fields. During the past decade, InAs/GaSb Strain Layer Superlattice (SLS) material system has emerged as a potential material for the entire infrared spectrum because of relatively easier growth, comparable absorption coefficients, lower tunneling currents and longer Auger lifetimes resulting in enhanced detectivities (D*). Band engineering in type II SLS allows us to engineer avalanche properties of electrons and holes. This is a great advantage over bulk InGaAs and HgCdTe APDs where engineering avalanche properties is not possible. The talk will discuss the evolution of superlattice based avalanche photodiodes and some of the recent results on the work being done at Raytheon on SWIR avalanche photodiodes.

  15. Linear mode photon counting with the noiseless gain HgCdTe e-avalanche photodiode

    Science.gov (United States)

    Beck, Jeffrey D.; Scritchfield, Richard; Mitra, Pradip; Sullivan, William W.; Gleckler, Anthony D.; Strittmatter, Robert; Martin, Robert J.

    2014-08-01

    A linear mode photon counting focal plane array using HgCdTe mid-wave infrared (MWIR) cutoff electron initiated avalanche photodiodes (e-APDs) has been designed, fabricated, and characterized. The broad spectral range (0.4 to 4.3 μm) is unique among photon counters, making this a "first of its kind" system spanning the visible to the MWIR. The low excess noise [F(M)≈1] of the e-APDs allows for robust photon detection while operating at a stable linear avalanche gain in the range of 500-1000. The readout integrated circuit (ROIC) design included a very high gain-bandwidth product resistive transimpedance amplifier (3×1013 Ω-Hz) and a 4 ns output digital pulse width comparator. The ROIC had 16 high-bandwidth analogs and 16 low-voltage differential signaling digital outputs. The 2×8 array was integrated into an LN2 Dewar with a custom leadless chip carrier and daughter board design that preserved high-bandwidth analog and digital signal integrity. The 2×8 e-APD arrays were fabricated on 4.3 μm cutoff HgCdTe and operated at 84 K. The measured dark currents were approximately 1 pA at 13 V bias where the measured avalanche photodiode gain was 500. This translates to a predicted dark current induced dark count rate of less than 20 KHz. Single photon detection was achieved with a photon pulse signal-to-noise ratio of 13.7 above the amplifier noise floor. A photon detection efficiency of 50% was measured at a photon background limited false event rate of about 1 MHz. The measured jitter was in the range of 550-800 ps. The demonstrated minimum time between distinguishable events was less than 10 ns.

  16. Hybrid artificial intelligence approach based on neural fuzzy inference model and metaheuristic optimization for flood susceptibilitgy modeling in a high-frequency tropical cyclone area using GIS

    Science.gov (United States)

    Tien Bui, Dieu; Pradhan, Biswajeet; Nampak, Haleh; Bui, Quang-Thanh; Tran, Quynh-An; Nguyen, Quoc-Phi

    2016-09-01

    This paper proposes a new artificial intelligence approach based on neural fuzzy inference system and metaheuristic optimization for flood susceptibility modeling, namely MONF. In the new approach, the neural fuzzy inference system was used to create an initial flood susceptibility model and then the model was optimized using two metaheuristic algorithms, Evolutionary Genetic and Particle Swarm Optimization. A high-frequency tropical cyclone area of the Tuong Duong district in Central Vietnam was used as a case study. First, a GIS database for the study area was constructed. The database that includes 76 historical flood inundated areas and ten flood influencing factors was used to develop and validate the proposed model. Root Mean Square Error (RMSE), Mean Absolute Error (MAE), Receiver Operating Characteristic (ROC) curve, and area under the ROC curve (AUC) were used to assess the model performance and its prediction capability. Experimental results showed that the proposed model has high performance on both the training (RMSE = 0.306, MAE = 0.094, AUC = 0.962) and validation dataset (RMSE = 0.362, MAE = 0.130, AUC = 0.911). The usability of the proposed model was evaluated by comparing with those obtained from state-of-the art benchmark soft computing techniques such as J48 Decision Tree, Random Forest, Multi-layer Perceptron Neural Network, Support Vector Machine, and Adaptive Neuro Fuzzy Inference System. The results show that the proposed MONF model outperforms the above benchmark models; we conclude that the MONF model is a new alternative tool that should be used in flood susceptibility mapping. The result in this study is useful for planners and decision makers for sustainable management of flood-prone areas.

  17. Smart hybrid rotary damper

    Science.gov (United States)

    Yang, C. S. Walter; DesRoches, Reginald

    2014-03-01

    This paper develops a smart hybrid rotary damper using a re-centering smart shape memory alloy (SMA) material as well as conventional energy-dissipating metallic plates that are easy to be replaced. The ends of the SMA and steel plates are inserted in the hinge. When the damper rotates, all the plates bend, providing energy dissipating and recentering characteristics. Such smart hybrid rotary dampers can be installed in structures to mitigate structural responses and to re-center automatically. The damaged energy-dissipating plates can be easily replaced promptly after an external excitation, reducing repair time and costs. An OpenSEES model of a smart hybrid rotary was established and calibrated to reproduce the realistic behavior measured from a full-scale experimental test. Furthermore, the seismic performance of a 3-story moment resisting model building with smart hybrid rotary dampers designed for downtown Los Angeles was also evaluated in the OpenSEES structural analysis software. Such a smart moment resisting frame exhibits perfect residual roof displacement, 0.006", extremely smaller than 18.04" for the conventional moment resisting frame subjected to a 2500 year return period ground motion for the downtown LA area (an amplified factor of 1.15 on Kobe earthquake). The smart hybrid rotary dampers are also applied into an eccentric braced steel frame, which combines a moment frame system and a bracing system. The results illustrate that adding smart hybrid rotaries in this braced system not only completely restores the building after an external excitation, but also significantly reduces peak interstory drifts.

  18. Evaluating photovoltaic/energy storage/diesel hybrid power systems for remote area power supplies in the Amazon region of Peru

    International Nuclear Information System (INIS)

    In June 1997, an international memorandum of understanding was signed between the Ministry of Energy and Mines (MEM) in Peru, the Solar Energy Industries Association (SEIA) and the International Lead Zinc Research Organization (ILZRO). This agreement seeks to evaluate the potential for remote area power supplies (RAPS) for electrification of rural villages in the Amazon region. This study, funded by ILZRO, was the first major activity conducted under the aegis of this agreement. The objective of this study was to conduct a preliminary engineering design and feasibility study to assess the potential for Remote Area Power Supplies (RAPS) in the Amazon Region of Peru. This paper presents the results of this preliminary engineering study. (author)

  19. Low area 4-bit 5 MS/s flash-type digitizer for hybrid-pixel detectors - Design study in 180 nm and 40 nm CMOS

    Science.gov (United States)

    Otfinowski, Piotr; Grybos, Pawel

    2015-11-01

    We report on the design of a 4-bit flash ADC with dynamic offset correction dedicated to measurement systems based on a pixel architecture. The presented converter was manufactured in two CMOS technologies: widespread and economical 180 nm and modern 40 nm process. The designs are optimized for the lowest area occupancy resulting in chip areas of 160×55 μm2 and 35×25 μm2. The experimental results indicate integral nonlinearity of +0.35/-0.21 LSB and +0.28/-0.25 LSB and power consumption of 52 μW and 17 μW at 5 MS/s for the prototypes in 180 nm and 40 nm technologies respectively.

  20. Hybride betongkonstruksjoner

    OpenAIRE

    Bjerve, Tor Øystein

    2010-01-01

    Denne oppgaven tar for seg beregning og testing av hybride betongkonstruksjoner. Den inneholder også beskrivelse av materialtester. Bjelkene som testes er tenkt å være utsnitt av dekkekonstruksjoner. Konstruksjonene skal bestå av et lag fiberarmert lettbetong, som er tenkt å opptre som en prefabrikert betongforskaling, samt en påstøp som kan fungere som ferdig gulv.I teoridelen av oppgaven er det sett på utfordringer og fordeler ved å benytte hybride konstruksjoner. I tillegg er beregningsvei...

  1. Flare Hybrids

    OpenAIRE

    M. Tomczak; Dubieniecki, P.

    2015-01-01

    Svestka (Solar Phys. 1989, 121, 399) on the basis of the Solar Maximum Mission observations introduced a new class of flares, the so-called flare hybrids. When they start, they look as typical compact flares (phase 1), but later on they look like flares with arcades of magnetic loops (phase 2). We summarize the features of flare hybrids in soft and hard X-rays as well as in extreme-ultraviolet; these allow us to distinguish them from other flares. Additional energy release or long plasma cool...

  2. 不同地区种植的‘张杂谷6号’营养成分差异分析%Differences Analysis of Nutritional Components in Different Planting Areas of Hybrid Millet-6

    Institute of Scientific and Technical Information of China (English)

    李珊珊; 张爱霞; 王桂荣; 邱风仓; 张新仕; 王慧军

    2012-01-01

    为了探究优质谷子生产区域,立足指导区域生产工作,以‘张杂谷6号’为材料,采用规范化标准实验法将其种植于宁夏固原、内蒙古赤峰、甘肃秦安、河北张家口4个春谷区域,并用营养检测国标法对其样品的营养物质进行测定与分析,研究各营养成分差异的原因及品质.结果表明,‘张杂谷6号’的蛋白质、脂肪、水分、灰分、粗纤维、矿物质、碳水化合物含量皆因地区气候、土壤等差异而呈现显著差异(P<0.05).与其他谷物比较研究结果表明,‘张杂谷6号’矿物质含量普遍高于玉米、小麦、大米,其中以铁(8.11 mg/100 g)、镁(111.41 mg/100 g)、硒(0.10 mg/1 00 g)、锌(2.87 mg/100 g)含量最为丰富.‘张杂谷6号’营养较丰富,各营养成分因种植区域等差异而呈现显著差异,其中内蒙古赤峰、宁夏固原地区作为区域定位较适宜其种植及品种推广.%In order to explore the high quality millet production area, based on the guidance of the working in production area, for samples with hybrid millet-6, it had been planted for standardization in Guyuan (Ningxia Province), Chifeng (Inner Mongolia), Qin'an (Gansu Province), Zhangjiakou (Hebei Province) these four spring millet area. Results showed that, protein, fat, moisture, ash, crude fiber, mineral and carbohydrate contents present significant differences by reasons about the situation of climates and soil in different areas (P<0.05). The comparative study on other grains showed that, mineral content of hybrid millet-6 was generally higher than corn, wheat and rice, especially iron (8.11 mg/100 g), magnesium (111.41 mg/100 g), selenium (0.10 mg/100 g) and zinc (2.87 mg/100 g) was the most abundant in it. Hybrid millet-6 was rich of nutrition, various kinds of nutrients significant differences reason for the differences of planting areas, Guyuan (Ningxia Province) and Chifeng (Inner Mongolia) was suitable for planting it, and suitable

  3. Hybrid Qualifications

    DEFF Research Database (Denmark)

    has turned out as a major focus of European education and training policies and certainly is a crucial principle underlying the European Qualifications Framework (EQF). In this context, «hybrid qualifications» (HQ) may be seen as an interesting approach to tackle these challenges as they serve «two...

  4. Synthesis of hollow silica nanosphere with high accessible surface area and their hybridization with carbon matrix for drastic enhancement of electrochemical property

    International Nuclear Information System (INIS)

    Highlights: • Hollow silica nanosphere with large void space and high surface area is synthesized. • Carbon was doped into silica layer through glucose solution and resulting carbon/silica composite drastically enhanced electrochemical property. • Combination of core–shell–corona micelle template and doping method could be a new platform for developing functional materials. - Abstract: Hollow silica nanospheres with high accessible surface area have been synthesized by using core–shell–corona polymeric micelle of poly (styrene-b-2-vinyle pyridine-b-ethylene oxide) (PS45k-PVP26k-PEO82k) as a template. The size of the template polymeric micelle depends on the pH of the solution, i.e. ≈100 nm at pH 7 whereas ≈300 nm at pH 4. The enlarged size of the micelle is possibly due to the protonation of the PVP block, which also serves as reaction sites for silica precursor. The size of the obtained silica nanosphere measured with transmission electron microscope (TEM) is around ≈70 nm and shell thickness is ≈20 nm. Fourier transformed infrared spectroscopy (FTIR) data confirms that the polymer template is completely removed during calcination. Conductive carbon is doped into the silica nanosphere through glucose solution followed by hydrothermal treatment and pyrolysis. It is found that the electrochemical performance and stability of the silica nanosphere is dramatically enhanced after carbon doping. The combined strategy of the core–shell–corona micelle as template and carbon doping could represent a new platform for the researchers to develop functional nanomaterials

  5. Synthesis of hollow silica nanosphere with high accessible surface area and their hybridization with carbon matrix for drastic enhancement of electrochemical property

    Energy Technology Data Exchange (ETDEWEB)

    Alam, Mohammad Mydul; Yamahana, Haruki [Department of Chemistry, Faculty of Science and Engineering, Saga University, 1 Honjo-machi, Saga 840-8502 (Japan); Bastakoti, Bishnu Prasad [World Premier International (WPI) Research Center for Materials Nanoarchitectonics (MANA), National Institute for Materials Science - NIMS, 1-1 Namiki, Tsukuba, Ibaraki 305-0044 (Japan); Luitel, Hom Nath; Zhao, Wenwen [Department of Chemistry, Faculty of Science and Engineering, Saga University, 1 Honjo-machi, Saga 840-8502 (Japan); Yamauchi, Yusuke [World Premier International (WPI) Research Center for Materials Nanoarchitectonics (MANA), National Institute for Materials Science - NIMS, 1-1 Namiki, Tsukuba, Ibaraki 305-0044 (Japan); Department of Nanoscience and Nanoengineering, Faculty of Science and Engineering, Waseda University, 3-4-1 Okubo, Shinjuku, Tokyo 169-8555 (Japan); Watari, Takanori; Noguchi, Hideyuki [Department of Chemistry, Faculty of Science and Engineering, Saga University, 1 Honjo-machi, Saga 840-8502 (Japan); Nakashima, Kenichi, E-mail: nakashik@cc.saga-u.ac.jp [Department of Chemistry, Faculty of Science and Engineering, Saga University, 1 Honjo-machi, Saga 840-8502 (Japan)

    2014-09-30

    Highlights: • Hollow silica nanosphere with large void space and high surface area is synthesized. • Carbon was doped into silica layer through glucose solution and resulting carbon/silica composite drastically enhanced electrochemical property. • Combination of core–shell–corona micelle template and doping method could be a new platform for developing functional materials. - Abstract: Hollow silica nanospheres with high accessible surface area have been synthesized by using core–shell–corona polymeric micelle of poly (styrene-b-2-vinyle pyridine-b-ethylene oxide) (PS45k-PVP26k-PEO82k) as a template. The size of the template polymeric micelle depends on the pH of the solution, i.e. ≈100 nm at pH 7 whereas ≈300 nm at pH 4. The enlarged size of the micelle is possibly due to the protonation of the PVP block, which also serves as reaction sites for silica precursor. The size of the obtained silica nanosphere measured with transmission electron microscope (TEM) is around ≈70 nm and shell thickness is ≈20 nm. Fourier transformed infrared spectroscopy (FTIR) data confirms that the polymer template is completely removed during calcination. Conductive carbon is doped into the silica nanosphere through glucose solution followed by hydrothermal treatment and pyrolysis. It is found that the electrochemical performance and stability of the silica nanosphere is dramatically enhanced after carbon doping. The combined strategy of the core–shell–corona micelle as template and carbon doping could represent a new platform for the researchers to develop functional nanomaterials.

  6. High performance CaS solar-blind ultraviolet photodiodes fabricated by seed-layer-assisted growth

    International Nuclear Information System (INIS)

    CaS, with a direct bandgap of 5.38 eV, is expected to be a strong candidate as the active-layer of high performance solar-blind UV photodiodes that have important applications in both civilian and military sectors. Here, we report that a seed-layer-assisted growth approach via molecular beam epitaxy can result in high crystalline quality rocksalt CaS thin films on zincblende GaAs substrates. The Au/CaS/GaAs solar-blind photodiodes demonstrated , more than five orders in its visible rejection power, a photoresponse of 36.8 mA/w at zero bias and a corresponding quantum efficiency as high as 19% at 235 nm

  7. A PMT-like high gain avalanche photodiode based on GaN/AlN periodical stacked structure

    CERN Document Server

    Zheng, Ji-yuan; Yang, Di; Yu, Jia-dong; Meng, Xiao; E, Yan-xiong; Wu, Chao; Hao, Zhi-biao; Sun, Chang-zheng; Xiong, Bing; Luo, Yi; Han, Yan-jian; Wang, Jian; Li, Hong-tao; Brault, Julien; Matta, Samuel; Khalfioui, Mohamed Al; Yan, Jian-chang; Wei, Tong-bo; Zhang, Yun; Wang, Jun-xi

    2016-01-01

    Avalanche photodiode (APD) has been intensively investigated as a promising candidate to replace photomultiplier tubes (PMT) for weak light detection. However, in conventional APDs, a large portion of carrier energy drawn from the electric field is thermalized, and the multiplication efficiencies of electron and hole are low and close. In order to achieve high gain, the device should work under breakdown bias, where carrier multiplication proceeds bi-directionally to form a positive feedback multiplication circle. However, breakdown is hard to control, in practice, APDs should work under Geiger mode as a compromise between sustainable detection and high gain. The complexity of system seriously restricts the application. Here, we demonstrate an avalanche photodiode holding high gain without breakdown, which means no quenching circuit is needed for sustainable detection. The device is based on a GaN/AlN periodically-stacked-structure (PSS), wherein electron holds much higher efficiency than hole to draw energy ...

  8. Wavelength-selective ultraviolet (Mg,Zn)O photodiodes: Tuning of parallel composition gradients with oxygen pressure

    Science.gov (United States)

    Zhang, Zhipeng; von Wenckstern, Holger; Lenzner, Jörg; Grundmann, Marius

    2016-06-01

    We report on ultraviolet photodiodes with integrated optical filter based on the wurtzite (Mg,Zn)O thin films. Tuning of the bandgap of filter and active layers was realized by employing a continuous composition spread approach relying on the ablation of a single segmented target in pulsed-laser deposition. Filter and active layers of the device were deposited on opposite sides of a sapphire substrate with nearly parallel compositional gradients. Ensure that for each sample position the bandgap of the filter layer blocking the high energy radiation is higher than that of the active layer. Different oxygen pressures during the two depositions runs. The absorption edge is tuned over 360 meV and the spectral bandwidth of photodiodes is typically 100 meV and as low as 50 meV.

  9. A test beam set-up for the characterization of the Geiger-mode avalanche photodiode technology for particle tracking

    CERN Document Server

    Vilella, A; Trenado, J; Vila, A; Casanova, R; Vos, M; Garrido, L; Dieguez, A

    2012-01-01

    It is well known that avalanche photodiodes operated in the Geiger mode above the breakdown voltage offer a virtually infinite gain and time accuracy in the picosecond range that can be used for single photon detection. However, their performance in particle detection still remains unexplored. In this contribution, we are going to expose different steps that we have taken in order to prove the efficiency of the Geiger mode avalanche photodiodes in the aforementioned field. In particular, we will present a setup for the characterization of these sensors in a test beam. The expected results of the test beam at DESY and CERN have been simulated with Geant4 and will also be exposed.

  10. A discrete scintillation camera module using silicon photodiode readout of CsI(Tl) crystals for breast cancer imaging

    International Nuclear Information System (INIS)

    The authors characterize a 3 x 4 element imaging array consisting of 3 x 3 x 5 mm3 CsI(Tl) scintillator crystals individually read out by 3 x 3 mm2 PIN silicon photodiodes. The array is a prototype for larger modules for use in single photon breast cancer imaging. The photodiode output signals are amplified with a 16 channel custom IC (99mTc. Array pixels demonstrate an average room temperature energy resolution of 10.7 ± 0.6% fwhm for these 140 keV gamma rays. The authors observe an intrinsic spatial resolution of 3.3 mm fwhm for a 2.5 mm diameter 57Co beam on the face of the crystal array, and a system resolution of 5.9 mm fwhm for a 2 mm diameter uncollimated 99mTc source viewed through a high resolution hexagonal hole collimator at an imaging distance of 5 cm

  11. Infrared and visible thermoluminescence signals of Tm-doped CaF2 measured by a semiconductor photodiode

    International Nuclear Information System (INIS)

    This brief note presents preliminary results of tests using a semiconductor photodiode in a reader for thermoluminescent dosimetry. CaF2 TLD detectors doped with 0.35% Tm were used, annealed in the usual way as for clinical neutron dosimetry, and irradiated with a Co60 unit having a dose rate of 0.2387 Gy min-1. Correction for infra-red sensitivity of the photodiode is discussed and results of tests for dose dependence of glow peak amplitudes from 100 and 1500C peaks presented. For a signal to noise ratio of 10 from the 1500 peak there was a minimal detectable doe of 37 mGy for the visible and 2.4 mGy for the infrared glow curve of the TLD 300 detectors used in this study. (U.K.)

  12. High performance CaS solar-blind ultraviolet photodiodes fabricated by seed-layer-assisted growth

    Energy Technology Data Exchange (ETDEWEB)

    He, Qing Lin; Lai, Ying Hoi; Sou, Iam Keong, E-mail: phiksou@ust.hk [Nano Science and Nano Technology Program, The Hong Kong University of Science and Technology, Hong Kong (China); Department of Physics and William Mong Institute of Nano Science and Technology, The Hong Kong University of Science and Technology, Hong Kong (China); Liu, Yi; Beltjens, Emeline; Qi, Jie [Department of Physics and William Mong Institute of Nano Science and Technology, The Hong Kong University of Science and Technology, Hong Kong (China)

    2015-11-02

    CaS, with a direct bandgap of 5.38 eV, is expected to be a strong candidate as the active-layer of high performance solar-blind UV photodiodes that have important applications in both civilian and military sectors. Here, we report that a seed-layer-assisted growth approach via molecular beam epitaxy can result in high crystalline quality rocksalt CaS thin films on zincblende GaAs substrates. The Au/CaS/GaAs solar-blind photodiodes demonstrated , more than five orders in its visible rejection power, a photoresponse of 36.8 mA/w at zero bias and a corresponding quantum efficiency as high as 19% at 235 nm.

  13. Development of novel technologies to enhance performance and reliability of III-Nitride avalanche photodiodes

    Science.gov (United States)

    Suvarna, Puneet Harischandra

    Solar-blind ultraviolet avalanche photodiodes are an enabling technology for applications in the fields of astronomy, communication, missile warning systems, biological agent detection and particle physics research. Avalanche photodiodes (APDs) are capable of detecting low-intensity light with high quantum efficiency and signal-to-noise ratio without the need for external amplification. The properties of III-N materials (GaN and AlGaN) are promising for UV photodetectors that are highly efficient, radiation-hard and capable of visible-blind or solar-blind operation without the need for external filters. However, the realization of reliable and high performance III-N APDs and imaging arrays has several technological challenges. The high price and lack of availability of bulk III-N substrates necessitates the growth of III-Ns on lattice mismatched substrates leading to a high density of dislocations in the material that can cause high leakage currents, noise and premature breakdown in APDs. The etched sidewalls of III-N APDs and high electric fields at contact edges are also detrimental to APD performance and reliability. In this work, novel technologies have been developed and implemented that address the issues of performance and reliability in III-Nitride based APDs. To address the issue of extended defects in the bulk of the material, a novel pulsed MOCVD process was developed for the growth of AlGaN. This process enables growth of high crystal quality AlxGa1-xN with excellent control over composition, doping and thickness. The process has also been adapted for the growth of high quality III-N materials on silicon substrate for devices such as high electron mobility transistors (HEMTs). A novel post-growth defect isolation technique is also discussed that can isolate the impact of conductive defects from devices. A new sidewall passivation technique using atomic layer deposition (ALD) of dielectric materials was developed for III-N APDs that is effective in

  14. Impact of a New Highly Sensitive HgCdTe Avalanche Photodiode Detector on Receiver Performance for the CO2 Sounder Lidar for the ASCENDS Mission

    Science.gov (United States)

    Sun, X.; Abshire, J. B.

    2013-12-01

    NASA Goddard Space Flight Center (GSFC) is currently developing a CO2 lidar as a candidate for the NASA's planned ASCENDS mission under the support of Earth Science Technology Office (ESTO) Instrument Incubator Program (IIP). As part of this work we have demonstrated new type of lower noise HgCdTe avalanche photodiode (APD) multi-element detector for the lidar receiver. This significantly improves the receiver sensitivity, lower the laser power, and reduce the receiver telescope size compared to InGaAs photomultiplier tubes (PMT) and APDs currently used. The HgCdTe APD arrays were designed and manufactured by DRS Technologies, Reconnaissance, Surveillance and Target Acquisition (RSTA) Division, which combines their mature HgCdTe APD detector in a hybrid package with a new custom cryogenic silicon preamplifier. The new detectors were specially designed for our airborne CO2 lidar and operate at ~ 77K inside a turn-key closed-cycle cooler. The detector has 80 μm square pixels in a 4x4 array, and >70% fill factor and was custom designed to match the optics of our airborne and eventually space-based CO2 lidar. The initial results of evaluating the detector at NASA GSFC showed the HgCdTe APD assembly has a quantum efficiency of ~90% near 1550-nm, >500 APD gain, 8-10 MHz electrical bandwidth, and an average noise equivalent power of Technology (ACT) program. DRS RSTA will use a new higher speed preamplifier and reduce the input capacitance to further reduce the noise and achieve linear mode photon counting performance.

  15. Thermal imager based on the array light sensor device of 128×128 CdHgTe-photodiodes

    OpenAIRE

    Reva V. P.; Golenkov A. G.; Zabudskiy V. V.; Korinets S. V.; Tsybriy Z. F.; Gumenjuk-Sichevska J. V.; Bunchuk S. G.; Apatskaya M. V.; Lysiuk I. А.; Smoliy М. I.

    2010-01-01

    The results of investigation of developed thermal imager for middle (3—5 µm) infrared region are presented and its applications features are discussed. The thermal imager consists of cooled to 80 K 128×128 diodes focal plane array on the base of cadmium–mercury–telluride compound and cryostat with temperature checking system. The photodiode array is bonded with readout device (silicon focal processor) via indium microcontacts. The measured average value of noise equivalent temperature differe...

  16. Improvements of the wavelength shifter-photodiode light readout technique for applications in the field of particle calorimetry

    International Nuclear Information System (INIS)

    For a group of calorimeters scintillators are used as active medium. The task of this thesis consisted in the attempt of the readout with photodiodes in combination with wavelength shifters. It suceeded to double by means of a two-dye-component wavelength shifters in connection with the scintillator SCNS 38 the signal efficiency against the hitherto best commercially available wavelength shifter Y7. The study of impurity effects reemissions etc. was supported and supplemented by a Monte Carlo simulation program. Hereby it was shown that the theoretically reachable maximal collection efficiency lies away yet by a factor 2. After performance of many single studies and improvements using this readout technique a test calorimeter was constructed and tested. Hereby the ability of the procedure was proved. A noise equivalent to 35 MeV was measured. The signal yield per GeV deposed energy extends to 25000 sample electrons. The signal-to-noise ratio in the observation of cosmic muons was 9:1. Furthermore possibilities for the improvement of the photodiode quantum yield in the short-wave range below 450 nm was studied which was reached either by a special design of the p-layer of the photodiode or by adding of a wavelength shifter. In the latter procedure simultaneously a simple measuring method resulted for the determination of the quantum yield of a wavelength shifter in the maximum of its extinction which can yield at a suitable light source an accuracy of approx.=2%. Also for fully active calorimeters the application, i.e. the addition of a wavelength shifter is suited for the enhancement of the readout efficiency against simple photodiode readout. In a measurement with NaI(Tl) an improvement by a factor 3 was reached. (orig./HSI)

  17. Radiation hardness investigation of avalanche photodiodes for the Projectile Spectator Detector readout at the Compressed Baryonic Matter experiment

    Czech Academy of Sciences Publication Activity Database

    Kushpil, Vasilij; Mikhaylov, Vasily; Kushpil, Svetlana; Tlustý, Pavel; Svoboda, Ondřej; Kugler, Andrej

    2015-01-01

    Roč. 787, JUL (2015), s. 117-120. ISSN 0168-9002 R&D Projects: GA MŠk LG12007; GA MŠk LG14004; GA MŠk(CZ) LM2011019 Institutional support: RVO:61389005 Keywords : avalanche photodiodes * single protons detection * radiation hardness * neutron irradiation tests * compressed Baryonic Matter experiment * Projectile Spectator Detector Subject RIV: BG - Nuclear, Atomic and Molecular Physics, Colliders Impact factor: 1.216, year: 2014

  18. High-optical-power handling InGaAs photodiodes and balanced receivers for high-spurious free dynamic range (SFDR) analog photonic links

    Science.gov (United States)

    Joshi, Abhay M.; Wang, Xinde; Mohr, Dan; Becker, Donald; Patil, Ravikiran

    2004-08-01

    We have developed 20 mA or higher photocurrent handling InGaAs photodiodes with 20 GHz bandwidth, and 10 mA or higher photocurrent handling InGaAs photodiodes with >40 GHz bandwidth. These photodiodes have been thoroughly tested for reliability including Bellcore GR 468 standard and are built to ISO 9001:2000 Quality Management System. These Dual-depletion InGaAs/InP photodiodes are surface illuminated and yet handle such large photocurrent due to advanced band-gap engineering. They have broad wavelength coverage from 800 nm to 1700 nm, and thus can be used at several wavelengths such as 850 nm, 1064 nm, 1310 nm, 1550 nm, and 1620 nm. Furthermore, they exhibit very low Polarization Dependence Loss of 0.05dB typical to 0.1dB maximum. Using above high current handling photodiodes, we have developed classical Push-Pull pair balanced photoreceivers for the 2 to 18 GHz EW system. These balanced photoreceivers boost the Spurious Free Dynamic Range (SFDR) by almost 3 dB by eliminating the laser RIN noise. Future research calls for designing an Avalanche Photodiode Balanced Pair to boost the SFDR even further by additional 3 dB. These devices are a key enabling technology in meeting the SFDR requirements for several DoD systems.

  19. Parasitic effect of photodiode made of layers grown under HBT on frequency performance of InP/InGaAs HBT in OEIC

    International Nuclear Information System (INIS)

    High speed and high sensitivity p-i-n/HBT photoreceivers were implemented using an optoelectronic integration technology, where the p-i-n InP/InGaAs waveguide photodiode and InP/InGaAs HBTs are made from vertically stacked epitaxial layers on a semi-insulating InP substrate. The parasitic effects of the photodiode on the microwave performance of HBT are investigated, these being encountered in optoelectronic integrated circuits where the photodiode layers are grown under the InP/InGaAs HBT layers. We estimated a HBT unit current gain cut-off frequency fT of 82 GHz and the maximum oscillation frequency fmax of 64 GHz in the OEIC wafer with HBT on the photodiode layers at an emitter-collector voltage Vce of 1 V and a collector current Ic of 20 mA. These values represent 20 %-degraded rf performance, due to the parasitic junction capacitance of the p-i-n photodiode layer placed at the bottom of the HBT, compared with the values, fT of 107 GHz and fmax of 88 GHz, of the OEIC wafer with the photodiode on HBT.

  20. Investigation of the performance of alpha particle counting and alpha-gamma discrimination by pulse shape with micro-pixel avalanche photodiode

    International Nuclear Information System (INIS)

    Being capable measuring small lights gives possibility to use micro-pixel avalanche photodiodes with scintillators. It is shown two prototypes to use micro-pixel avalanche photodiodes with and without scintillators as alpha and gamma counters in this paper. First prototype is to use two micro-pixel avalanche photodiodes. One for detecting alpha particles and closer to it, the second one with a thin plastic scintillator for detecting gamma rays. Second prototype is called two-layers configuration in which it is used only one micro-pixel avalanche photodiode, but two scntillators with different decay times. One can distinquish alpha particle and gamma ray events by using pulse shape discrimination techniques in the two-layer configuration. In this work an alpha particle and gamma ray counting performance of micro-pixel avalanche photodiodes without scintillators and its combination of plastic and BGO+ plastic scintillators was investigated. Obtained results showed the detection performance of the micro-pixel avalanche photodiodes in combination with plastic scintillator was about the same as conventional semiconductor detectors

  1. Determination of the electron-hole pair creation energy for semiconductors from the spectral responsivity of photodiodes

    CERN Document Server

    Scholze, F; Kuschnerus, P; Rabus, H; Richter, M; Ulm, G

    2000-01-01

    Ionizing radiation can be detected by the measurement of the charge carriers produced in a detector. The improved semiconductor technology now allows detectors operating near the physical limits of the detector materials to be designed. The mean energy required for producing an electron-hole pair, W, is a material property of the semiconductor. Here, the determination of W from the spectral responsivity of photodiodes is demonstrated. Using spectrally dispersed synchrotron radiation, different types of semiconductor photodiodes have been examined in the UV-, VUV-, and soft X-ray spectral range. Their spectral responsivity was determined with relative uncertainties between 0.4% and 1% using a cryogenic electrical-substitution radiometer as primary detector standard. Results are presented for silicon n-on-p junction photodiodes and for GaAsP/Au Schottky diodes at room temperature. The investigations for silicon covered the complete spectral range from 3 to 1500 eV, yielding a constant value W=(3.66+-0.03) eV fo...

  2. Full well capacity and quantum efficiency optimization for small size backside illuminated CMOS image pixels with a new photodiode structure

    International Nuclear Information System (INIS)

    To improve the full well capacity (FWC) of a small size backside illuminated (BSI) CMOS image sensor (CIS), the effect of photodiode capacitance (CPD) on FWC is studied, and a reformed pinned photodiode (PPD) structure is proposed. Two procedures are implemented for the optimization. The first is to form a varying doping concentration and depth stretched new N region, which is implemented by an additional higher-energy and lower-dose N type implant beneath the original N region. The FWC of this structure is increased by extending the side wall junctions in the substrate. Secondly, in order to help the enlarged well capacity achieve full depletion, two step P-type implants with different implant energies are introduced to form a P-type insertion region in the interior of the stretched N region. This vertical inserted P region guarantees that the proposed new PD structure achieves full depletion in the reset period. The simulation results show that the FWC can be improved from 1289e− to 6390e−, and this improvement does not sacrifice any image lag performance. Additionally, quantum efficiency (QE) is enhanced in the full wavelength range, especially 6.3% at 520 nm wavelength. This technique can not only be used in such BSI structures, but also adopted in an FSI pixel with any photodiode-type readout scheme. (semiconductor devices)

  3. Gamma-ray detection with an UV-enhanced photodiode and scintillation crystals emitting at short wavelengths

    Energy Technology Data Exchange (ETDEWEB)

    Johansen, G.A. [Bergen Univ. (Norway). Dept. of Phys., Appl. Phys. and Technol.; Froeyen, S. [Bergen Univ. (Norway). Dept. of Phys., Appl. Phys. and Technol.; Hansen, T.-E. [A/S Microelectronics (AME), Horten (Norway)

    1997-03-01

    A low-noise ion implanted photodiode with high spectral response in the deep blue/UV region has been tested as read-out device for scintillation crystals with matching emission spectra (YAP(Ce), GSO(Ce), BGO and CsI(Tl)). This gamma-ray detector concept is attractive in many industrial applications where compactness, reliability and ambient temperature operation are important. The results show that the amount of detected scintillation light energy falls rapidly off as the wavelength of the scintillation light decreases. It is concluded that the dynamic spectral response of the photodiode, due to increasing carrier collection times, is considerably less than the DC response at short wavelengths. The diode is not useful in pulse mode operation with scintillation crystals emitting at wavelengths below about 400 nm. For read-out of CsI(Tl) with 661.6 keV gamma-radiation, however, the photodiode concept shows better energy resolution (7.1%) than other detectors. (orig.).

  4. Gamma-ray detection with an UV-enhanced photodiode and scintillation crystals emitting at short wavelengths

    International Nuclear Information System (INIS)

    A low-noise ion implanted photodiode with high spectral response in the deep blue/UV region has been tested as read-out device for scintillation crystals with matching emission spectra (YAP(Ce), GSO(Ce), BGO and CsI(Tl)). This gamma-ray detector concept is attractive in many industrial applications where compactness, reliability and ambient temperature operation are important. The results show that the amount of detected scintillation light energy falls rapidly off as the wavelength of the scintillation light decreases. It is concluded that the dynamic spectral response of the photodiode, due to increasing carrier collection times, is considerably less than the DC response at short wavelengths. The diode is not useful in pulse mode operation with scintillation crystals emitting at wavelengths below about 400 nm. For read-out of CsI(Tl) with 661.6 keV gamma-radiation, however, the photodiode concept shows better energy resolution (7.1%) than other detectors. (orig.)

  5. Radiation hardness investigation of avalanche photodiodes for the Projectile Spectator Detector readout at the Compressed Baryonic Matter experiment

    International Nuclear Information System (INIS)

    In this paper, we discuss results of avalanche photodiodes radiation tests for Projectile Spectator Detector at future Compressed Baryonic Matter experiment. The tests were carried out in Nuclear Physics Institute of ASCR in Řež using the cyclotron facility. Secondary neutron beam was used for irradiation because the main radiation damage in the Projectile Spectator Detector is caused by neutrons. Two types of the avalanche photodiodes from Zecotek and Ketek manufacturers were investigated. Special attention was given to the noise investigation and self-annealing after the irradiation. We have irradiated two Ketek PM3375 diodes with equivalent dose for 1 MeV neutrons equal to 2.5±0.2×1012 n/cm2, and single Zecotek MAPD-3N diode with equivalent dose for 1 MeV neutrons equal to 3.4±0.2×1012 n/cm2. All the types of the diodes have shown an increasing level of the noise after the irradiation. From that we can conclude that those avalanche photodiodes are not able to detect single photons anymore due to high noise levels

  6. Synthesis of hollow silica nanosphere with high accessible surface area and their hybridization with carbon matrix for drastic enhancement of electrochemical property

    Science.gov (United States)

    Alam, Mohammad Mydul; Yamahana, Haruki; Bastakoti, Bishnu Prasad; Luitel, Hom Nath; Zhao, Wenwen; Yamauchi, Yusuke; Watari, Takanori; Noguchi, Hideyuki; Nakashima, Kenichi

    2014-09-01

    Hollow silica nanospheres with high accessible surface area have been synthesized by using core-shell-corona polymeric micelle of poly (styrene-b-2-vinyle pyridine-b-ethylene oxide) (PS45k-PVP26k-PEO82k) as a template. The size of the template polymeric micelle depends on the pH of the solution, i.e. ≈100 nm at pH 7 whereas ≈300 nm at pH 4. The enlarged size of the micelle is possibly due to the protonation of the PVP block, which also serves as reaction sites for silica precursor. The size of the obtained silica nanosphere measured with transmission electron microscope (TEM) is around ≈70 nm and shell thickness is ≈20 nm. Fourier transformed infrared spectroscopy (FTIR) data confirms that the polymer template is completely removed during calcination. Conductive carbon is doped into the silica nanosphere through glucose solution followed by hydrothermal treatment and pyrolysis. It is found that the electrochemical performance and stability of the silica nanosphere is dramatically enhanced after carbon doping. The combined strategy of the core-shell-corona micelle as template and carbon doping could represent a new platform for the researchers to develop functional nanomaterials.

  7. 3D NANOTUBE FIELD EFFECT TRANSISTORS FOR HYBRID HIGH-PERFORMANCE AND LOW-POWER OPERATION WITH HIGH CHIP-AREA EFFICIENCY

    KAUST Repository

    Fahad, Hossain M.

    2014-03-01

    scaling on silicon, the amount of current generated per device has to be increased while keeping short channel effects and off-state leakage at bay. The objective of this doctoral thesis is the investigation of an innovative vertical silicon based architecture called the silicon nanotube field effect transistor (Si NTFET). This topology incorporates a dual inner/outer core/shell gate stack strategy to control the volume inversion properties in a hollow silicon 1D quasi-nanotube under a tight electrostatic configuration. Together with vertically aligned source and drain, the Si NTFET is capable of very high on-state performance (drive current) in an area-efficient configuration as opposed to arrays of gate-all-around nanowires, while maintaining leakage characteristics similar to a single nanowire. Such a device architecture offsets the need of device arraying that is needed with fin and nanowire architectures. Extensive simulations are used to validate the potential benefits of Si NTFETs over GAA NWFETs on a variety of platforms such as conventional MOSFETs, tunnel FETs, junction-less FETs. This thesis demonstrates a novel CMOS compatible process flow to fabricate vertical nanotube transistors that offer a variety of advantages such as lithography-independent gate length definition, integration of epitaxially grown silicon nanotubes with spacer based gate dielectrics and abrupt in-situ doped source/drain junctions. Experimental measurement data will showcase the various materials and processing challenges in fabricating these devices. Finally, an extension of this work to topologically transformed wavy channel FinFETs is also demonstrated keeping in line with the theme of area efficient high-performance electronics.

  8. A comparison of avalanche photodiode and photomultiplier tube detectors for flow cytometry

    Science.gov (United States)

    Lawrence, William G.; Varadi, Gyula; Entine, Gerald; Podniesinski, Edward; Wallace, Paul K.

    2008-02-01

    Commercial flow cytometers use photomultiplier tubes (PMTs) for fluorescence detection. These detectors have high linear gain and broad dynamic range, but have limited sensitivity in the red and near infrared spectral regions. We present a comparison of avalanche photodiodes (APDs) and PMTs as detectors in flow cytometry instruments, and demonstrate improved sensitivity and resolution in the red and near infrared spectral regions using the APD. The relative performance of the PMT and APD were evaluated by simultaneously measuring the mean fluorescence intensity and coefficient of variation for emission from light emitting diode pulses, flow cytometry test beads, and fluorescently labeled cells. The relative signal to noise performance of the APD and PMT was evaluated over the 500 nm to 1050 nm wavelength range using pulsed light emitting diode light sources. While APDs have higher quantum efficiency but lower internal gain than PMTs, with appropriate external amplification the APD has signal to noise response that is comparable to PMTs in the 500 nm to 650 nm range and improved response in the 650 nm to 850 nm range The data demonstrates that the APD had performance comparable to the PMT in the spectral region between 500 to 650 nm and improved performance in the range of 650 to 1000 nm, where the PMT performance is quite poor. CD4 positive lymphocyte populations were easily identified in normal human blood both by APD and PMT using phycoerythrin labeled antibodies. In contrast, only the APD detector could resolve CD4 positive populations using 800 nm Quantum dot labeled antibodies.

  9. Characterization of GaAs mesa photodiodes with X-ray and γ-ray photons

    Energy Technology Data Exchange (ETDEWEB)

    Barnett, A.M., E-mail: a.barnett@sussex.ac.uk

    2014-08-21

    Results characterizing the performance of prototype thin (3 µm i layer) GaAs p{sup +}–i–n{sup +} mesa photodiodes (one 200 µm diameter and one 400 µm diameter device) are presented showing the spectral performance of the devices at photon energies from 4.95 keV (V Kα{sub 1} X-ray fluorescence) to 59.5 keV ({sup 241}Am γ-ray emission). The devices were operated uncooled at +33.3 °C. The energy resolution (full width half maximum) was measured to vary from 780 eV at 4.95 keV to 950 eV at 59.5 keV for the 200 µm diameter diode, and from 1.08 keV at 4.95 keV to 1.33 keV at 59.5 keV for the 400 µm diameter diode. The increased broadening of FWHM with increasing photon energy was found to be greater than can be explained by the expected energy dependence of the Fano noise, but the peak charge output from the devices varied linearly (R{sup 2}{sub 200} {sub µm}=0.99998, R{sup 2}{sub 400} {sub µm}=0.999998) with incident photon energy.

  10. Update on Linear Mode Photon Counting with the HgCdTe Linear Mode Avalanche Photodiode

    Science.gov (United States)

    Beck, Jeffrey D.; Kinch, Mike; Sun, Xiaoli

    2014-01-01

    The behavior of the gain-voltage characteristic of the mid-wavelength infrared cutoff HgCdTe linear mode avalanche photodiode (e-APD) is discussed both experimentally and theoretically as a function of the width of the multiplication region. Data are shown that demonstrate a strong dependence of the gain at a given bias voltage on the width of the n- gain region. Geometrical and fundamental theoretical models are examined to explain this behavior. The geometrical model takes into account the gain-dependent optical fill factor of the cylindrical APD. The theoretical model is based on the ballistic ionization model being developed for the HgCdTe APD. It is concluded that the fundamental theoretical explanation is the dominant effect. A model is developed that combines both the geometrical and fundamental effects. The model also takes into account the effect of the varying multiplication width in the low bias region of the gain-voltage curve. It is concluded that the lower than expected gain seen in the first 2 × 8 HgCdTe linear mode photon counting APD arrays, and higher excess noise factor, was very likely due to the larger than typical multiplication region length in the photon counting APD pixel design. The implications of these effects on device photon counting performance are discussed.

  11. Progress in the use of avalanche photodiodes for readout for calorimeters

    International Nuclear Information System (INIS)

    During the past year the Superconducting Super Collider Tracking Group has progressed from acquisition of its first avalanche photodiode (APD) to installation of a 96-channel array of the devices. The work was motivated by the desire to learn how to use APDs as the sensitive elements in a fiber tracking detector, moderated by the presence of limited resources and the absence of activity within groups outside the SSC Laboratory on such a project. We chose, therefore, to team up with an ongoing research effort which intended to evaluate both pre-shower and shower-maximum detectors and various means of sensing the light produced. The pre-shower detector is made of layers of scintillating fibers similar to a fiber tracker. The shower-maximum detector uses optical fibers to transmit the light from scintillating plates to the readout devices. Our contribution has been to develop the APD array for use in this test from concept to operation. Currently, the equipment is installed in Fermilab's MP beamline awaiting delivery to the final 36 APDs and exposure to the beam. 9 refs., 18 figs

  12. Performance Analysis of OCDMA Based on AND Detection in FTTH Access Network Using PIN & APD Photodiodes

    Science.gov (United States)

    Aldouri, Muthana; Aljunid, S. A.; Ahmad, R. Badlishah; Fadhil, Hilal A.

    2011-06-01

    In order to comprise between PIN photo detector and avalanche photodiodes in a system used double weight (DW) code to be a performance of the optical spectrum CDMA in FTTH network with point-to-multi-point (P2MP) application. The performance of PIN against APD is compared through simulation by using opt system software version 7. In this paper we used two networks designed as follows one used PIN photo detector and the second using APD photo diode, both two system using with and without erbium doped fiber amplifier (EDFA). It is found that APD photo diode in this system is better than PIN photo detector for all simulation results. The conversion used a Mach-Zehnder interferometer (MZI) wavelength converter. Also we are study, the proposing a detection scheme known as AND subtraction detection technique implemented with fiber Bragg Grating (FBG) act as encoder and decoder. This FBG is used to encode and decode the spectral amplitude coding namely double weight (DW) code in Optical Code Division Multiple Access (OCDMA). The performances are characterized through bit error rate (BER) and bit rate (BR) also the received power at various bit rate.

  13. An Active Gain-control System for Avalanche Photo-Diodes under Moderate Temperature Variations

    CERN Document Server

    Kataoka, J; Ikagawa, T; Kotoku, J; Kuramoto, Y; Tsubuku, Y; Saitô, T; Yatsu, Y; Kawai, N; Ishikawa, Y; Kawabata, N

    2006-01-01

    Avalanche photodiodes (APDs) are promising light sensor for various fields of experimental physics. It has been argued, however, that variation of APD gain with temperature could be a serious problem preventing APDs from replacing traditional photomultiplier tubes (PMTs) in some applications. Here we develop an active gain-control system to keep the APD gain stable under moderate temperature variations. As a performance demonstration of the proposed system, we have tested the response of a scintillation photon detector consisting of a 5x5 mm^2 reverse-type APD optically coupled with a CsI(Tl) crystal. We show that the APD gain was successfully controlled under a temperature variation of DT = 20deg, within a time-cycle of 6000 sec. The best FWHM energy resolution of 6.1+-0.2 % was obtained for 662 keV gamma-rays, and the energy threshold was as low as 6.5 keV, by integrating data from +20deg - 0deg cycles. The corresponding values for -20deg - 0deg cycles were 6.9+-0.2 % and 5.2 keV, respectively. These result...

  14. Relative calibration of photodiodes in the soft-x-ray spectral range

    International Nuclear Information System (INIS)

    A method of obtaining a relative calibration of Si photodiodes for the spectral range of soft x rays (1--30 keV) is presented. A simple mathematical model of the p-n diode is adopted which allows the response to be described in terms of a small set of parameters. The diffusion length as well as the thickness of a dead layer below the front surface of the diodes are obtained from measurements of angular dependences of the photoinduced current. It is shown that a precise characterization of the diode response and an accurate relative calibration can be obtained using this method. However, it was found that the presence of a dead layer a few tenths of a micrometer thick can pose severe restrictions on the use of planar diode arrays in x-ray tomography systems where uniformity of response is crucial. The method has been applied to the diode arrays equipping the x-ray tomography system built for the TCV tokamak, a magnetic fusion research device. copyright 1995 American Institute of Physics

  15. Single-Photon-Sensitive HgCdTe Avalanche Photodiode Detector

    Science.gov (United States)

    Huntington, Andrew

    2013-01-01

    The purpose of this program was to develop single-photon-sensitive short-wavelength infrared (SWIR) and mid-wavelength infrared (MWIR) avalanche photodiode (APD) receivers based on linear-mode HgCdTe APDs, for application by NASA in light detection and ranging (lidar) sensors. Linear-mode photon-counting APDs are desired for lidar because they have a shorter pixel dead time than Geiger APDs, and can detect sequential pulse returns from multiple objects that are closely spaced in range. Linear-mode APDs can also measure photon number, which Geiger APDs cannot, adding an extra dimension to lidar scene data for multi-photon returns. High-gain APDs with low multiplication noise are required for efficient linear-mode detection of single photons because of APD gain statistics -- a low-excess-noise APD will generate detectible current pulses from single photon input at a much higher rate of occurrence than will a noisy APD operated at the same average gain. MWIR and LWIR electron-avalanche HgCdTe APDs have been shown to operate in linear mode at high average avalanche gain (M > 1000) without excess multiplication noise (F = 1), and are therefore very good candidates for linear-mode photon counting. However, detectors fashioned from these narrow-bandgap alloys require aggressive cooling to control thermal dark current. Wider-bandgap SWIR HgCdTe APDs were investigated in this program as a strategy to reduce detector cooling requirements.

  16. Simultaneous multi-element atomic absorption system using photodiode array detector

    International Nuclear Information System (INIS)

    A photodiode array (PDA) detector-multichannel analyser (MCA) system has been coupled to a flame and a graphite furnace atomiser and tested for simultaneous multielement atomic absorption analysis. Multielement hollow cathode lamps (HCL) are used as light source. Spectral lines are dispersed through a spectrograph with triple gratings and detected by a 25.4 mm PDA detector consisting of 1024 elements. The optical MCA system is capable of recording multiple spectra spanned by the spectrograph/PDA. The transmitted intensity spectra obtained for the standard and analyte solutions during flame or graphite furnace atomisation are converted to absorbance spectra using the MCA software provided. Results from the comparison studies show that the linear range and sensitivities for Ni-Co-Fe and Cu-Cr obtained from the simultaneous measurements are within the same order of magnitudes as those from conventional single element determinations using photomultiplier tube detection. The study also shows that non-atomic absorption can be readily corrected by a two-line method where non-atomic absorption lines can be chosen from the spectra recorded simultaneously. The proposed system has been evaluated for the determination of trace elements using NBS standard reference water SRM 1643b

  17. High-speed bridge circuit for InGaAs avalanche photodiode single-photon detector

    Science.gov (United States)

    Hashimoto, Hirofumi; Tomita, Akihisa; Okamoto, Atsushi

    2014-02-01

    Because of low power consumption and small footprint, avalanche photodiodes (APD) have been commonly applied to photon detection. Recently, high speed quantum communication has been demonstrated for high bit-rate quantum key distribution. For the high speed quantum communication, photon detectors should operate at GHz-clock frequencies. We propose balanced detection circuits for GHz-clock operation of InGaAs-APD photon detectors. The balanced single photon detector operates with sinusoidal wave gating. The sinusoidal wave appearing in the output is removed by the subtraction from APD signal without sharp band-elimination filters. Omission of the sharp filters removes the constraint on the operating frequency of the single photon detector. We present two designs, one works with two identical APDs, the other with one APD and a low-pass filter. The sinusoidal gating enables to eliminate the gating noise even with the simple configuration of the latter design. We demonstrated the balanced single photon detector operating with 1.020GHz clock at 233 K, 193 K, and 186.5 K. The dark count probability was 4.0 x 10-4 counts/pulse with the quantum efficiency of 10% at 233K, and 1.6 x 10-4 counts/pulse at 186.5 K. These results were obtained with easily available APDs (NR8300FP-C.C, RENESASS) originally developed for optical time-domain reflectmeters.

  18. High-resolution detection of 100 keV electrons using avalanche photodiodes

    Science.gov (United States)

    Ogasawara, K.; Hirahara, M.; Miyake, W.; Kasahara, S.; Takashima, T.; Asamura, K.; Saito, Y.; Mukai, T.

    2008-08-01

    With two electron beam sources, we have tested two new Hamamatsu [Hamamatsu Photonics K.K., Shizuoka, Japan ] avalanche photodiodes (APDs) of spl 3988 and spl 6098 to detect electron beams up to 100 keV. Though our previous results showed the effectiveness and the advantage of an APD to measure 2-40 keV electrons, its upper limit was not high enough to detect so-called medium-energy electrons. In addition to the limitation of its detectable range, the response at different energies was also not linear. These newly developed APDs, which have thicker depletion-layers, provide full coverage of this missing range along with a good linearity. The depletion-layer thickness was increased to 140 μm for both APDs, the dead-layer of spl 3988 became 10 times thicker than that of spl 6098. The thin-surface dead-layer and thick depletion-layer of spl 6098 allows the detection of electrons from 3 keV up to 100 keV with a good linearity and with an excellent energy resolution of 4 keV at 100-keV electrons. The wide dynamic range from 3 keV to 100 keV of those APDs will increase their appeal in detecting electrons for space plasma research.

  19. Measurement of bunch length in Indus-1 storage ring using fast photodiode

    International Nuclear Information System (INIS)

    The length of electron bunches in a storage ring is an important parameter for both synchrotron radiation users and accelerator physicists. Several methods are used for measurements of bunch length using electronic and optical instruments. We have measured temporal profile of synchrotron radiation emitted from dipole magnet of Indus-1 by using fast photodiode. Bunch length is calculated by assuming gaussian profile for the particles inside bunch. The results show that bunch length is increasing with the decrease of gap voltage of RF cavity. These measurements were carried out at low beam current; at high voltage results are in close agreement with theory and the values estimated using ZAP code. In the second experiment, the results show that bunch length increases with the increase of beam current inside the bunch, and above threshold current, it follows Chao-Gareyte scaling law. The longitudinal broadband impedance for Indus-1 SRS was estimated using Keil-Schnell criterion and results were compared with theoretical estimated values using ZAP code.

  20. Characterization of total ionizing dose damage in COTS pinned photodiode CMOS image sensors

    Directory of Open Access Journals (Sweden)

    Zujun Wang

    2016-03-01

    Full Text Available The characterization of total ionizing dose (TID damage in COTS pinned photodiode (PPD CMOS image sensors (CISs is investigated. The radiation experiments are carried out at a 60Co γ-ray source. The CISs are produced by 0.18-μm CMOS technology and the pixel architecture is 8T global shutter pixel with correlated double sampling (CDS based on a 4T PPD front end. The parameters of CISs such as temporal domain, spatial domain, and spectral domain are measured at the CIS test system as the EMVA 1288 standard before and after irradiation. The dark current, random noise, dark signal non-uniformity (DSNU, photo response non-uniformity (PRNU, overall system gain, saturation output, dynamic range (DR, signal to noise ratio (SNR, quantum efficiency (QE, and responsivity versus the TID are reported. The behaviors of the tested CISs show remarkable degradations after radiation. The degradation mechanisms of CISs induced by TID damage are also analyzed.