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Sample records for applications thin film

  1. Thin film device applications

    CERN Document Server

    Kaur, Inderjeet

    1983-01-01

    Two-dimensional materials created ab initio by the process of condensation of atoms, molecules, or ions, called thin films, have unique properties significantly different from the corresponding bulk materials as a result of their physical dimensions, geometry, nonequilibrium microstructure, and metallurgy. Further, these characteristic features of thin films can be drasti­ cally modified and tailored to obtain the desired and required physical characteristics. These features form the basis of development of a host of extraordinary active and passive thin film device applications in the last two decades. On the one extreme, these applications are in the submicron dimensions in such areas as very large scale integration (VLSI), Josephson junction quantum interference devices, magnetic bubbles, and integrated optics. On the other extreme, large-area thin films are being used as selective coatings for solar thermal conversion, solar cells for photovoltaic conver­ sion, and protection and passivating layers. Ind...

  2. Thin films for emerging applications v.16

    CERN Document Server

    Francombe, Maurice H

    1992-01-01

    Following in the long-standing tradition of excellence established by this serial, this volume provides a focused look at contemporary applications. High Tc superconducting thin films are discussed in terms of ion beam and sputtering deposition, vacuum evaporation, laser ablation, MOCVD, and other deposition processes in addition to their ultimate applications. Detailed treatment is also given to permanent magnet thin films, lateral diffusion and electromigration in metallic thin films, and fracture and cracking phenomena in thin films adhering to high-elongation substrates.

  3. MOF thin films: existing and future applications.

    Science.gov (United States)

    Shekhah, O; Liu, J; Fischer, R A; Wöll, Ch

    2011-02-01

    The applications and potentials of thin film coatings of metal-organic frameworks (MOFs) supported on various substrates are discussed in this critical review. Because the demand for fabricating such porous coatings is rather obvious, in the past years several synthesis schemes have been developed for the preparation of thin porous MOF films. Interestingly, although this is an emerging field seeing a rapid development a number of different applications on MOF films were either already demonstrated or have been proposed. This review focuses on the fabrication of continuous, thin porous films, either supported on solid substrates or as free-standing membranes. The availability of such two-dimensional types of porous coatings opened the door for a number of new perspectives for functionalizing surfaces. Also for the porous materials themselves, the availability of a solid support to which the MOF-films are rigidly (in a mechanical sense) anchored provides access to applications not available for the typical MOF powders with particle sizes of a few μm. We will also address some of the potential and applications of thin films in different fields like luminescence, QCM-based sensors, optoelectronics, gas separation and catalysis. A separate chapter has been devoted to the delamination of MOF thin films and discusses the potential to use them as free-standing membranes or as nano-containers. The review also demonstrates the possibility of using MOF thin films as model systems for detailed studies on MOF-related phenomena, e.g. adsorption and diffusion of small molecules into MOFs as well as the formation mechanism of MOFs (101 references).

  4. Beryllium thin films for resistor applications

    Science.gov (United States)

    Fiet, O.

    1972-01-01

    Beryllium thin films have a protective oxidation resistant property at high temperature and high recrystallization temperature. However, the experimental film has very low temperature coefficient of resistance.

  5. Optical thin films and coatings from materials to applications

    CERN Document Server

    Flory, Francois

    2013-01-01

    Optical coatings, including mirrors, anti-reflection coatings, beam splitters, and filters, are an integral part of most modern optical systems. This book provides an overview of thin film materials, the properties, design and manufacture of optical coatings and their use across a variety of application areas.$bOptical coatings, including mirrors, anti-reflection coatings, beam splitters, and filters, are an integral part of most modern optical systems. Optical thin films and coatings provides an overview of thin film materials, the properties, design and manufacture of optical coatings and their use across a variety of application areas. Part one explores the design and manufacture of optical coatings. Part two highlights unconventional features of optical thin films including scattering properties of random structures in thin films, optical properties of thin film materials at short wavelengths, thermal properties and colour effects. Part three focusses on novel materials for optical thin films and coatings...

  6. Polycystalline silicon thin films for electronic applications

    Energy Technology Data Exchange (ETDEWEB)

    Jaeger, Christian Claus

    2012-01-15

    with an activation energy of E{sub A}{sup poly-Si}=1.1 eV. By long-lasting tempering or a short high-temperature step finally the stable layer configuration substrate/Al+Si islands(hillocks)/poly-Si can be reached (E{sub A}{sup hillocks}=2.4 eV). The further main topic of this thesis is the study of the applicability of the poly-silicon layers fabricated by means of the ALILE and R-ALILE process for electronic applications. First thin-film transistors were studied. Additionally thin-film solar cells with microcrystalline silicon as absorber material on polycrystalline R-ALILE seed layers were fabricated. Finally the suitedness of the fabricated poly-silicon layers for crytographic applications were studied.

  7. Nanocoatings and ultra-thin films technologies and applications

    CERN Document Server

    Tiginyanu, Ion

    2011-01-01

    Gives a comprehensive account of the developments of nanocoatings and ultra-thin films. This book covers the fundamentals, processes of deposition and characterisation of nanocoatings, as well as the applications. It is suitable for the glass and glazing, automotive, electronics, aerospace, construction and biomedical industries in particular.$bCoatings are used for a wide range of applications, from anti-fogging coatings for glass through to corrosion control in the aerospace and automotive industries. Nanocoatings and ultra-thin films provides an up-to-date review of the fundamentals, processes of deposition, characterisation and applications of nanocoatings. Part one covers technologies used in the creation and analysis of thin films, including chapters on current and advanced coating technologies in industry, nanostructured thin films from amphiphilic molecules, chemical and physical vapour deposition methods and methods for analysing nanocoatings and ultra-thin films. Part two focuses on the applications...

  8. Stabilized thin film heterostructure for electrochemical applications

    DEFF Research Database (Denmark)

    2015-01-01

    The invention provides a method for the formation of a thin film multi-layered heterostructure upon a substrate, said method comprising the steps of: a. providing a substrate; b. depositing a buffer layer upon said substrate, said buffer layer being a layer of stable ionic conductor (B); c. depos...

  9. Assembly and Applications of Carbon Nanotube Thin Films

    Institute of Scientific and Technical Information of China (English)

    Hongwei ZHU; Bingqing WEI

    2008-01-01

    The ultimate goal of current research on carbon nanotubes (CNTs) is to make breakthroughs that advance nanotechnological applications of bulk CNT materials. Especially, there has been growing interest in CNT thin films because of their unique and usually enhanced properties and tremendous potential as components for use in nano-electronic and nano-mechanical device applications or as structural elements in various devices. If a synthetic or a post processing method can produce high yield of nanotube thin films, these structures will provide tremendous potential for fundamental research on these devices. This review will address the synthesis, the post processing and the device applications of self-assembled nanotube thin films.

  10. Thin-film organic photonics molecular layer deposition and applications

    CERN Document Server

    Yoshimura, Tetsuzo

    2011-01-01

    Among the many atomic/molecular assembling techniques used to develop artificial materials, molecular layer deposition (MLD) continues to receive special attention as the next-generation growth technique for organic thin-film materials used in photonics and electronics. Thin-Film Organic Photonics: Molecular Layer Deposition and Applications describes how photonic/electronic properties of thin films can be improved through MLD, which enables precise control of atomic and molecular arrangements to construct a wire network that achieves ""three-dimensional growth"". MLD facilitates dot-by-dot--o

  11. Metallic glass thin films for potential biomedical applications.

    Science.gov (United States)

    Kaushik, Neelam; Sharma, Parmanand; Ahadian, Samad; Khademhosseini, Ali; Takahashi, Masaharu; Makino, Akihiro; Tanaka, Shuji; Esashi, Masayoshi

    2014-10-01

    We introduce metallic glass thin films (TiCuNi) as biocompatible materials for biomedical applications. TiCuNi metallic glass thin films were deposited on the Si substrate and their structural, surface, and mechanical properties were investigated. The fabricated films showed good biocompatibility upon exposure to muscle cells. Also, they exhibited an average roughness of films was shown to be free from Ni and mainly composed of a thin titanium oxide layer, which resulted in the high surface biocompatibility. In particular, there was no cytotoxicity effect of metallic glass films on the C2C12 myoblasts and the cells were able to proliferate well on these substrates. Low cost, viscoelastic behavior, patternability, high electrical conductivity, and the capability to coat various materials (e.g., nonbiocompatible materials) make TiCuNi as an attractive material for biomedical applications.

  12. Thin Films for Advanced Glazing Applications

    Directory of Open Access Journals (Sweden)

    Ann-Louise Anderson

    2016-09-01

    Full Text Available Functional thin films provide many opportunities for advanced glazing systems. This can be achieved by adding additional functionalities such as self-cleaning or power generation, or alternately by providing energy demand reduction through the management or modulation of solar heat gain or blackbody radiation using spectrally selective films or chromogenic materials. Self-cleaning materials have been generating increasing interest for the past two decades. They may be based on hydrophobic or hydrophilic systems and are often inspired by nature, for example hydrophobic systems based on mimicking the lotus leaf. These materials help to maintain the aesthetic properties of the building, help to maintain a comfortable working environment and in the case of photocatalytic materials, may provide external pollutant remediation. Power generation through window coatings is a relatively new idea and is based around the use of semi-transparent solar cells as windows. In this fashion, energy can be generated whilst also absorbing some solar heat. There is also the possibility, in the case of dye sensitized solar cells, to tune the coloration of the window that provides unheralded external aesthetic possibilities. Materials and coatings for energy demand reduction is highly desirable in an increasingly energy intensive world. We discuss new developments with low emissivity coatings as the need to replace scarce indium becomes more apparent. We go on to discuss thermochromic systems based on vanadium dioxide films. Such systems are dynamic in nature and present a more sophisticated and potentially more beneficial approach to reducing energy demand than static systems such as low emissivity and solar control coatings. The ability to be able to tune some of the material parameters in order to optimize the film performance for a given climate provides exciting opportunities for future technologies. In this article, we review recent progress and challenges in

  13. Photonic thin film fabrication and characterization for display applications

    Science.gov (United States)

    Sun, Xiaowei

    In this thesis, the fabrication and characterization of various kinds of thin films useful for display applications are discussed. The fabrication technique used was mainly pulsed laser deposition, sputtering was also used to fabricate ITO films on glass. In-situ resistance measurement was used to characterize the initial growth of ITO thin films on glass. It was found that at a growth temperature of 150°C or above, ITO grows via a 2D layer by layer growth mechanism with a conductive critical thickness of about one lattice constant. With the growth temperature of less than 150°C, the films grow via a 3D growth mode. The growth mode transition also coincides with the amorphous to poly transition. In this thesis, a novel pulsed laser deposition technique called liquid target pulsed laser deposition was reported. It was used to fabricate GaN thin films from a gallium liquid. Liquid target pulsed laser deposition, to a certain extent, overcomes the target deterioration, target rotation, and splashing problems compared to traditional solid target pulsed laser deposition. Reasonably good crystal quality GaN thin films were fabricated on various substrates of quartz, silicon, and sapphire with a thin layer of ZnO buffer. Epitaxially grown GaN films were fabricated on ZnO buffered sapphire at an elevated substrate temperature. We studied the optical properties of epitaxially grown ZnO thin film on sapphire by photoluminescence measurement and variable angle spectroscopic ellipsometry. The bandgap, at room temperature and at 10K, and the refractive index of ZnO on sapphire were obtained. Phosphor thin film is an important topic in display application for color representation. In this thesis, we report the fabrication of red, green and blue primary color silicate phosphor thin films on silicon and silicon dioxide covered silicon substrates by pulsed laser deposition. By annealing at 800°C--1000°C, reasonably good purity red, green and blue photoluminescence were obtained

  14. Crystalline, highly oriented MOF thin film: the fabrication and application.

    Science.gov (United States)

    Fu, Zhihua; Xu, Gang

    2016-10-24

    The thin film of metal-organic frameworks (MOFs) is a rapidly developing research area which has tremendous potential applications in many fields. One of the major challenges in this area is to fabricate MOF thin film with good crystallinity, high orientation and well-controlled thickness. In order to address this challenge, different appealing approaches have been studied intensively. Among various oriented MOF films, many efforts have also been devoted to developing novel properties and broad applications, such as in gas separator, thermoelectric, storage medium and photovoltaics. As a result, there has been a large demand for fundamental studies that can provide guidance and experimental data for further applications. In this account, we intend to present an overview of current synthetic methods for fabricating oriented crystalline MOF thin film and bring some updated applications. We give our perspective on the background, preparation and applications that led to the developments in this area and discuss the opportunities and challenges of using crystalline, highly oriented MOF thin film.

  15. Characterization of Sucrose Thin Films for Biomedical Applications

    Directory of Open Access Journals (Sweden)

    S. L. Iconaru

    2011-01-01

    Full Text Available Sucrose is a natural osmolyte accumulated in the cells of organisms as they adapt to environmental stress. In vitro sucrose increases protein stability and forces partially unfolded structures to refold. Thin films of sucrose (C12H22O11 were deposited on thin cut glass substrates by the thermal evaporation technique (P∼10−5 torr. Characteristics of thin films were put into evidence by Fourier Transform Infrared Spectroscopy (FTIR, X-ray Photoelectron Spectroscopy (XPS, scanning electron microscopy (SEM, and differential thermal analysis and thermal gravimetric analysis (TG/DTA. The experimental results confirm a uniform deposition of an adherent layer. In this paper we present a part of the characteristics of sucrose thin films deposited on glass in medium vacuum conditions, as a part of a culture medium for osteoblast cells. Osteoblast cells were used to determine proliferation, viability, and cytotoxicity interactions with sucrose powder and sucrose thin films. The osteoblast cells have been provided from the American Type Culture Collection (ATCC Centre. The outcome of this study demonstrated the effectiveness of sucrose thin films as a possible nontoxic agent for biomedical applications.

  16. Growth of oxide thin films for optical gas sensor applications

    Energy Technology Data Exchange (ETDEWEB)

    Caiteanu, D. [Lasers Department, Institute of Atomic Physics, P.O. Box MG 36, 76900 Bucharest V (Romania); Gyoergy, E. [Lasers Department, Institute of Atomic Physics, P.O. Box MG 36, 76900 Bucharest V (Romania)]. E-mail: eniko@ifin.nipne.ro; Grigorescu, S. [Lasers Department, Institute of Atomic Physics, P.O. Box MG 36, 76900 Bucharest V (Romania); Mihailescu, I.N. [Lasers Department, Institute of Atomic Physics, P.O. Box MG 36, 76900 Bucharest V (Romania); Prodan, G. [University ' Ovidius' of Constanta, Mamaia Bd., 124, Constanta 900527 (Romania); Ciupina, V. [University ' Ovidius' of Constanta, Mamaia Bd., 124, Constanta 900527 (Romania)

    2006-04-30

    Tungsten trioxide and titanium dioxide thin films were synthesised by pulsed laser deposition. We used for irradiations of oxide targets an UV KrF* ({lambda} = 248 nm, {tau} {sub FWHM} {approx_equal} 20 ns, {nu} = 2 Hz) excimer laser source, at 2 J/cm{sup 2} incident fluence value. The experiments were performed in low oxygen pressure. The (0 0 1) SiO{sub 2} substrates were heated during the thin film deposition process at temperature values within the 300-500 deg. Crange. The structure and crystalline status of the obtained oxide thin films were investigated by high resolution transmission electron microscopy. Our analyses show that the films are composed by nanoparticles with average diameters from a few to a few tens of nm. Moreover, the films deposited at substrate temperatures higher than 300 deg. Care crystalline. The tungsten trioxide films consist of a mixture of triclinic and monoclinic phases, while the titanium dioxide films structure corresponds to the tetragonal anatase phase. The oxide films average transmittance in the visible-infrared spectral range is higher than 80%, which makes them suitable for sensor applications.

  17. Nanostructured thin films for icephobic applications

    Science.gov (United States)

    Noormohammed, Saleema

    Icing on surfaces such as cables or high voltage insulators often leads to severe safety issues such as power outages in cold winter conditions. Conventional methods used to avoid such icing problems include mechanical deicing where the ice is scraped or broken and chemical deicing where deicers such as ethylene glycol are used. These methods have their own disadvantages of being destructive, expensive and time consuming. A better approach would be to prevent ice from forming in the first place by producing coating materials that are icephobic. Superhydrophobic surfaces, which demonstrate high water-repellency due to the negligible contact area of water with those surfaces, are also expected to minimize the contact area of ice. A low dielectric constant surface is also expected to reduce the adhesion of ice due to the screening of mirror charges, thereby eliminating one of the strongest interaction forces---the electrostatic forces of attraction at the ice-surface interface. In the present research work, both concepts were studied by producing superhydrophobic nanorough low-epsilon dielectric surfaces on aluminum or alumina substrates. Superhydrophobic properties were achieved on surfaces of aluminum or alumina by creating a certain nanoroughness using chemical methods followed by a low surface energy coating of rf-sputtered Teflon or fluoroalkyl-silane (FAS-17) providing a water contact angle greater than 160°. The same behavior is reported even when the nanorough substrates were coated with dielectric thin films of ZnO (lower epsilon) or TiO 2, (higher epsilon). It is found that the superhydrophobic nanorough low surface energy surfaces are also icephobic and the presence of a low dielectric constant surface coating of Teflon (lowest epsilon; epsilon = 2) allows a considerable reduction of the ice adhesion strength even on non-nanotextured surfaces where ice would stick. The superhydrophobic nanorough low-epsilon surfaces also demonstrate morphological and

  18. Determination of Selected Material Properties of Castable Thin Film Polyimides for Applications in Solar Thermal Propulsion

    Science.gov (United States)

    Paxton, James P.

    1994-04-01

    Partial contents; This Study will, WHat is a thin film?, An application of Thin Film polyimides, Typical Solar Thermal Rocket Configuration, Benefits of 6FDA +APB Thin Films, Design Parameters for Articles constructed with thin film polyimides, theory, thin film test apparatus, unlaxial test appartus, toggle grip design, computer test panel, experimental procedure, Modulus of Elasticity results, Coefficient of Thermal Expansion results, Conclusions and Recommendations, Acknowledgement.

  19. Thin Film & Deposition Systems (Windows)

    Data.gov (United States)

    Federal Laboratory Consortium — Coating Lab: Contains chambers for growing thin film window coatings. Plasma Applications Coating Lab: Contains chambers for growing thin film window coatings. Solar...

  20. Thin Film & Deposition Systems (Windows)

    Data.gov (United States)

    Federal Laboratory Consortium — Coating Lab: Contains chambers for growing thin film window coatings. Plasma Applications Coating Lab: Contains chambers for growing thin film window coatings. Solar...

  1. Sputter deposited Terfenol-D thin films for multiferroic applications

    Directory of Open Access Journals (Sweden)

    K. P. Mohanchandra

    2015-09-01

    Full Text Available In this paper, we study the sputter deposition and crystallization process to produce high quality Terfenol-D thin film (100 nm with surface roughness below 1.5 nm. The Terfenol-D thin film was produced using DC magnetron sputtering technique with various sputtering parameters and two different crystallization methods, i.e. substrate heating and post-annealing. Several characterization techniques including WDS, XRD, TEM, AFM, SQUID and MOKE were used to determine the physical and magnetic properties of the Terfenol-D films. TEM studies reveal that the film deposited on the heated substrate has large grains grown along the film thickness producing undesirable surface roughness while the film crystallized by post-annealing method shows uniformly distributed small grains producing a smooth surface. The Terfenol-D film was also deposited onto (011 cut PMN-PT single crystal substrate. With the application of an electric field the film exhibited a 1553 Oe change in coercivity with an estimated saturation magnetostriction of λs = 910 x 10−6.

  2. Sputter deposited Terfenol-D thin films for multiferroic applications

    Science.gov (United States)

    Mohanchandra, K. P.; Prikhodko, S. V.; Wetzlar, K. P.; Sun, W. Y.; Nordeen, P.; Carman, G. P.

    2015-09-01

    In this paper, we study the sputter deposition and crystallization process to produce high quality Terfenol-D thin film (100 nm) with surface roughness below 1.5 nm. The Terfenol-D thin film was produced using DC magnetron sputtering technique with various sputtering parameters and two different crystallization methods, i.e. substrate heating and post-annealing. Several characterization techniques including WDS, XRD, TEM, AFM, SQUID and MOKE were used to determine the physical and magnetic properties of the Terfenol-D films. TEM studies reveal that the film deposited on the heated substrate has large grains grown along the film thickness producing undesirable surface roughness while the film crystallized by post-annealing method shows uniformly distributed small grains producing a smooth surface. The Terfenol-D film was also deposited onto (011) cut PMN-PT single crystal substrate. With the application of an electric field the film exhibited a 1553 Oe change in coercivity with an estimated saturation magnetostriction of λs = 910 x 10-6.

  3. Transparent amorphous zinc oxide thin films for NLO applications

    Science.gov (United States)

    Zawadzka, A.; Płóciennik, P.; Strzelecki, J.; Sahraoui, B.

    2014-11-01

    This review focuses on the growth and optical properties of amorphous zinc oxide (ZnO) thin films. A high quality ZnO films fabricated by dip-coating (sol-gel) method were grown on quartz and glass substrates at temperature equal to 350 K. The amorphous nature of the films was verified by X-ray diffraction. Atomic Force Microscopy was used to evaluate the surface morphology of the films. The optical characteristics of amorphous thin films have been investigated in the spectral range 190-1100 nm. Measurement of the polarized optical properties was shows a high transmissivity (80-99%) and low absorptivity (<5%) in the visible and near infrared regions at different angles of incidence. Linear optical properties were investigated by classic and Time-Resolved Photoluminescence (TRPL) measurements. Photoluminescence spectrum exhibits a strong ultraviolet emission while the visible emission is very weak. An innovative TRPL technique has enabled the measurement of the photoluminescence decay time as a function of temperature. TRPL measurements reveal a multiexponential decay behavior typical for amorphous thin films. Second and third harmonic generation measurements were performed by means of the rotational Maker fringe technique using Nd:YAG laser at 1064 nm in picosecond regime for investigations of the nonlinear optical properties. The obtained values of second and third order nonlinear susceptibilities were found to be high enough for the potential applications in the optical switching devices based on refractive index changes. Presented spectra confirm high structural and optical quality of the investigated zinc oxide thin films.

  4. Low temperature aluminum nitride thin films for sensory applications

    Science.gov (United States)

    Yarar, E.; Hrkac, V.; Zamponi, C.; Piorra, A.; Kienle, L.; Quandt, E.

    2016-07-01

    A low-temperature sputter deposition process for the synthesis of aluminum nitride (AlN) thin films that is attractive for applications with a limited temperature budget is presented. Influence of the reactive gas concentration, plasma treatment of the nucleation surface and film thickness on the microstructural, piezoelectric and dielectric properties of AlN is investigated. An improved crystal quality with respect to the increased film thickness was observed; where full width at half maximum (FWHM) of the AlN films decreased from 2.88 ± 0.16° down to 1.25 ± 0.07° and the effective longitudinal piezoelectric coefficient (d33,f) increased from 2.30 ± 0.32 pm/V up to 5.57 ± 0.34 pm/V for film thicknesses in the range of 30 nm to 2 μm. Dielectric loss angle (tan δ) decreased from 0.626% ± 0.005% to 0.025% ± 0.011% for the same thickness range. The average relative permittivity (ɛr) was calculated as 10.4 ± 0.05. An almost constant transversal piezoelectric coefficient (|e31,f|) of 1.39 ± 0.01 C/m2 was measured for samples in the range of 0.5 μm to 2 μm. Transmission electron microscopy (TEM) investigations performed on thin (100 nm) and thick (1.6 μm) films revealed an (002) oriented AlN nucleation and growth starting directly from the AlN-Pt interface independent of the film thickness and exhibit comparable quality with the state-of-the-art AlN thin films sputtered at much higher substrate temperatures.

  5. Carbon Nanotube Thin Film Transistors for Flat Panel Display Application.

    Science.gov (United States)

    Liang, Xuelei; Xia, Jiye; Dong, Guodong; Tian, Boyuan; Peng, Lianmao

    2016-12-01

    Carbon nanotubes (CNTs) are promising materials for both high performance transistors for high speed computing and thin film transistors for macroelectronics, which can provide more functions at low cost. Among macroelectronics applications, carbon nanotube thin film transistors (CNT-TFT) are expected to be used soon for backplanes in flat panel displays (FPDs) due to their superior performance. In this paper, we review the challenges of CNT-TFT technology for FPD applications. The device performance of state-of-the-art CNT-TFTs are compared with the requirements of TFTs for FPDs. Compatibility of the fabrication processes of CNT-TFTs and current TFT technologies are critically examined. Though CNT-TFT technology is not yet ready for backplane production line of FPDs, the challenges can be overcome by close collaboration between research institutes and FPD manufacturers in the short term.

  6. WFL: Microwave Applications of Thin Ferroelectric Films

    Science.gov (United States)

    Romanofsky, Robert

    2013-01-01

    We have developed a family of tunable microwave circuits, operating from X- through Ka-band, based on laser ablated BaxSr1-xTiO films on lanthanum aluminate and magnesium oxide substrates. Circuits include voltage controlled oscillators, filters, phase shifters and antennas. A review of the basic theory of operation of these devices will be presented along with measured performance. Emphasis has been on low-loss phase shifters to enable a new phased array architecture. The critical role of phase shifter loss and transient response in reflectarray antennas will be discussed. The Ferroelectric Reflectarray Critical Components Space Experiment was launched on the penultimate Space Shuttle, STS-134, in May of 2011. It included a bank of ferroelectric phase shifters with two different stoichiometries as well as ancillary electronics. The experiment package and status will be reported. In addition, unusual results of a Van der Pauw measurement involving a ferroelectric film grown on buffered high resisitivity silicon will be discussed.

  7. Thin-film voltammetry and its analytical applications: a review.

    Science.gov (United States)

    Tian, Huihui; Li, Yunchao; Shao, Huibo; Yu, Hua-Zhong

    2015-01-15

    Electrochemical reactions at the interfaces of immiscible electrolyte solutions (ITIES) are of fundamental importance in the fields of chemical, biological and pharmaceutical sciences. Four-electrode cell setup, scanning electrochemical microscopy (SECM) and thin-film voltammetry are the three most frequently used methods for studying the electrochemical processes at these interfaces. The principle, experimental design, advantages and challenges of the three methods are described and compared. The thin-film voltammetry is highlighted for its simplicity in experimental operation and kinetic data analysis. Its versatile analytical applications are discussed in detail, including the study of redox properties of hydrophobic compounds, evaluation of interfacial electron transfer kinetics, synthesis of nanoparticles/nanostructures, and illustration of cross-membrane ion transport phenomena.

  8. Carbon Nanotubes for Thin Film Transistor: Fabrication, Properties, and Applications

    Directory of Open Access Journals (Sweden)

    Yucui Wu

    2013-01-01

    Full Text Available We review the present status of single-walled carbon nanotubes (SWCNTs for their production and purification technologies, as well as the fabrication and properties of single-walled carbon nanotube thin film transistors (SWCNT-TFTs. The most popular SWCNT growth method is chemical vapor deposition (CVD, including plasma-enhanced chemical vapor deposition (PECVD, floating catalyst chemical vapor deposition (FCCVD, and thermal CVD. Carbon nanotubes (CNTs used to fabricate thin film transistors are sorted by electrical breakdown, density gradient ultracentrifugation, or gel-based separation. The technologies of applying CNT random networks to work as the channels of SWCNT-TFTs are also reviewed. Excellent work from global researchers has been benchmarked and analyzed. The unique properties of SWCNT-TFTs have been reviewed. Besides, the promising applications of SWCNT-TFTs have been explored. Finally, the key issues to be solved in future have been summarized.

  9. Thin film coated submicron gratings: theory, design, fabrication and application

    Energy Technology Data Exchange (ETDEWEB)

    Heine, C.

    1996-12-31

    The realization of new applications of submicron grating structures requires efficient theoretical methods and elaborate fabrication techniques. In this work rigorous diffraction theory for one-dimensional gratings has been investigated and optimization techniques, based on methods used in thin film optics, have been developed. Submicron gratings embossed in polycarbonate have been fabricated and characterized. This includes transmission measurements which are in good agreement with theoretical calculations. Designs for a wide range of optical filters, which lead to improved optical and mechanical properties, are presented. This has been demonstrated for broadband antireflection structures for solar energy applications, based on MgF{sub 2}-coated gratings. (author) figs., tabs., refs.

  10. Studies on thin film materials on acrylics for optical applications

    Indian Academy of Sciences (India)

    K Narasimha Rao

    2003-02-01

    Deposition of durable thin film coatings by vacuum evaporation on acrylic substrates for optical applications is a challenging job. Films crack upon deposition due to internal stresses and leads to performance degradation. In this investigation, we report the preparation and characterization of single and multi-layer films of TiO2, CeO2, Substance2 (E Merck, Germany), Al2O3, SiO2 and MgF2 by electron beam evaporation on both glass and PMMA substrates. Optical micrographs taken on single layer films deposited on PMMA substrates did not reveal any cracks. Cracks in films were observed on PMMA substrates when the substrate temperature exceeded 80°C. Antireflection coatings of 3 and 4 layers have been deposited and characterized. Antireflection coatings made on PMMA substrate using Substance2 (H2) and SiO2 combination showed very fine cracks when observed under microscope. Optical performance of the coatings has been explained with the help of optical micrographs.

  11. Nanoscale Thin Film Electrolytes for Clean Energy Applications

    Energy Technology Data Exchange (ETDEWEB)

    Nandasiri, Manjula I.; Sanghavi, Rahul P.; Kuchibhatla, Satyanarayana V N T; Thevuthasan, Suntharampillai

    2012-02-01

    Ceria and zirconia based systems can be used as electrolytes to develop solid oxide fuel cells for clean energy production and to prevent air pollution by developing efficient, reliable oxygen sensors. In this study, we have used oxygen plasma assisted molecular beam epitaxy (OPA-MBE) to grow samaria doped ceria (SDC), to understand the role of dopant concentration and geometry of the films towards the ionic conduction in these thin films. We have also discussed the Gd doped CeO2 (GDC) and Gd stabilized ZrO2 (GSZ) multi-layer thin films to investigate the effect of interfacial phenomena on the ionic conductivity of these hetero-structures. We found the optimum concentration to be 15 mol % SmO1.5, for achieving lowest electrical resistance in SDC thin films. The electrical resistance decreases with the increase in film thickness up to 200 nm. The results demonstrate the usefulness of this study towards establishing an optimum dopant concentration and choosing an appropriate thin film thickness to ameliorate the conductance of the SDC material system. Furthermore, we have explored the conductivity of highly oriented GDC and GSZ multi-layer thin films, wherein the conductivity increased with an increase in the number of layers. The extended defects and lattice strain near the interfaces increase the density of oxygen vacancies, which leads to enhanced ionic conductivity in multi-layer thin films.

  12. Thin-film ferroelectric materials and their applications

    Science.gov (United States)

    Martin, Lane W.; Rappe, Andrew M.

    2016-11-01

    Ferroelectric materials, because of their robust spontaneous electrical polarization, are widely used in various applications. Recent advances in modelling, synthesis and characterization techniques are spurring unprecedented advances in the study of these materials. In this Review, we focus on thin-film ferroelectric materials and, in particular, on the possibility of controlling their properties through the application of strain engineering in conventional and unconventional ways. We explore how the study of ferroelectric materials has expanded our understanding of fundamental effects, enabled the discovery of novel phases and physics, and allowed unprecedented control of materials properties. We discuss several exciting possibilities for the development of new devices, including those in electronic, thermal and photovoltaic applications, and transduction sensors and actuators. We conclude with a brief survey of the different directions that the field may expand to over the coming years.

  13. PEDOT:PSS thin film for photovoltaic application

    Directory of Open Access Journals (Sweden)

    J. Weszka

    2013-08-01

    Full Text Available Purpose: The aim of this paper was to investigate changes in surface morphology and optical parameters of thin films of poly(3,4-ethylenedioxythiophene poly(styrenesulfonate (PEDOT:PSS. Thin films were prepared using spin coating method. Design/methodology/approach: The thin films of PEDOT:PSS was investigate by Raman scattering technique in Raman spectrometer. The changes in surface topography were observed with the atomic force microscope AFM XE-100. The results of roughness have been prepared in the software XEI Park Systems. The measurement of optical parameter was performed using spectrometer UV/VIS and spectroscopic ellipsometer. Findings: Results and their analysis allow to conclude that the PEDOT:PSS solution concentration and spin speed, an important factor in spin coating technology, have a significant influence on surface morphology and optical reflection of thin films. Practical implications: Knowledge about the sol gel PEDOT:PSS optical parameters and the possibility of obtaining a uniform thin films show that it can be good material for photovoltaic and optoelectronic devices. Originality/value: The paper presents some researches of PEDOT:PSS thin films deposited by spin coating method on glass substrate

  14. Thin films growth parameters in MAPLE; application to fibrinogen

    Energy Technology Data Exchange (ETDEWEB)

    Jelinek, M [Institute of Physics ASCR, Na Slovance 2, 182 21Prague 8 (Czech Republic); Cristescu, R [Institute of Physics ASCR, Na Slovance 2, 182 21Prague 8 (Czech Republic); Kocourek, T [Institute of Physics ASCR, Na Slovance 2, 182 21Prague 8 (Czech Republic); Vorlicek, V [Institute of Physics ASCR, Na Slovance 2, 182 21Prague 8 (Czech Republic); Remsa, J [Institute of Physics ASCR, Na Slovance 2, 182 21Prague 8 (Czech Republic); Stamatin, L [Longhin Scarlat Dermato-Venerologic Hospital, Bucharest (Romania); Mihaiescu, D [University of Agriculture Sciences and Veterinary Medicine, 59 Marasti, Bucharest (Romania); Stamatin, I [University of Bucharest, Faculty of Physics, PO Box MG-11, 3Nano-SAE, Bucharest-Magurele (Romania); Mihailescu, I N [National Institute for Laser, Plasma and Radiation Physics, MG-36, RO-77125, Bucharest (Romania); Chrisey, D B [Naval Research Laboratory, Code 6851 Washington, DC 20375 (United States)

    2007-04-15

    Increasingly requirements on the thin film quality of functionalized materials are efficiently met by a novel laser processing technique - Matrix Assisted Pulsed Laser Evaporation (MAPLE). Examples of deposition conditions and main features characteristic to film growth rate of MAPLE-fabricated organic materials are summarized. MAPLE experimental results are compared with ones corresponding to the classical Pulsed Laser Deposition (PLD). In particular, the results of investigation of MAPLE-deposited fibrinogen blood protein thin films using a KrF* excimer laser and characterized by FTIR and Raman spectrometry are reported.

  15. Thin-Film Microtransformer for High Frequency Power Applications

    Directory of Open Access Journals (Sweden)

    Dinulovic Dragan

    2014-07-01

    Full Text Available This paper describes a development of a microtransformer device fabricated using thin film technology. The device is designed for higher switching frequencies beyond to 50 MHz power applications. A especially by the microtransformer is a design, which allows wide flexibility of a device by choosing a different values of an inductance and of a windings ratio. The microtransformer device is integrated on silicon substrate consisting of a closed magnetic core and six coils. Both, primary and secondary device side consist three coils. Therefore, this design allows using of a device for different switching frequencies. As a magnetic material for transformer core a permalloy NiFe45/55 was chosen.

  16. Thin film metal-oxides

    CERN Document Server

    Ramanathan, Shriram

    2009-01-01

    Presents an account of the fundamental structure-property relations in oxide thin films. This title discusses the functional properties of thin film oxides in the context of applications in the electronics and renewable energy technologies.

  17. Rare Earth Oxide Thin Films

    CERN Document Server

    Fanciulli, Marco

    2007-01-01

    Thin rare earth (RE) oxide films are emerging materials for microelectronic, nanoelectronic, and spintronic applications. The state-of-the-art of thin film deposition techniques as well as the structural, physical, chemical, and electrical properties of thin RE oxide films and of their interface with semiconducting substrates are discussed. The aim is to identify proper methodologies for the development of RE oxides thin films and to evaluate their effectiveness as innovative materials in different applications.

  18. Characterisation of Pb thin films prepared by the nanosecond pulsed laser deposition technique for photocathode application

    OpenAIRE

    Lorusso, Antonella; Gontad, F.; Broitman, Esteban; Chiadroni, E.; Perrone, Walter

    2015-01-01

    Pb thin films were prepared by the nanosecond pulsed laser deposition technique on Si (100) and polycrystalline Nb substrates for photocathode application. As the photoemission performances of a cathode are strongly affected by its surface characteristics, the Pb films were grown at different substrate temperatures with the aim of modifying the morphology and structure of thin films. An evident morphological modification in the deposited films with the formation of spherical grains at higher ...

  19. Interference effects in the sum frequency generation spectra of thin organic films. II: Applications to different thin-film systems.

    Science.gov (United States)

    Tong, Yujin; Zhao, Yanbao; Li, Na; Ma, Yunsheng; Osawa, Masatoshi; Davies, Paul B; Ye, Shen

    2010-07-21

    In this paper, the results of the modeling calculations carried out for predicting the interference effects expected in the sum frequency generation (SFG) spectra of a specific thin-layer system, described in the accompanying paper, are tested by comparing them with the experimental spectra obtained for a real thin-layer film comprising an organic monolayer/variable thickness dielectric layer/gold substrate. In this system, two contributions to the SFG spectra arise, a resonant contribution from the organic film and a nonresonant contribution from the gold substrate. The modeling calculations are in excellent agreement with the experimental spectra over a wide range of thicknesses and for different polarization combinations. The introduction of another resonant monolayer adjacent to the gold substrate and with the molecules having a reverse orientation has a significant affect on the spectral shapes which is predicted. If a dielectric substrate such as CaF(2) is used instead of a gold substrate, only the spectral intensities vary with the film thickness but not the spectral shapes. The counterpropagating beam geometry will change both the thickness dependent spectral shapes and the intensity of different vibrational modes in comparison with a copropagating geometry. The influences of these experimental factors, i.e., the molecular orientational structure in the thin film, the nature of the substrate, and the selected incident beam geometry, on the experimental SFG spectra are quantitatively predicted by the calculations. The thickness effects on the signals from a SFG active monolayer contained in a thin liquid-layer cell of the type frequently used for in situ electrochemical measurements is also discussed. The modeling calculation is also valid for application to other thin-film systems comprising more than two resonant SFG active interfaces by appropriate choice of optical geometries and relevant optical properties.

  20. Synthesis and characterization of copper antimony tin sulphide thin films for solar cell applications

    Science.gov (United States)

    Ali, N.; Hussain, A.; Ahmed, R.; Wan Shamsuri, W. N.; Fu, Y. Q.

    2016-12-01

    Low price thin film modules based on Copper antimony tin sulphide (CATS) are introduced for solar harvesting to compete for the already developed compound semiconductors. Here, CATS thin films were deposited on soda lime glass by thermal evaporation technique followed by a rapid thermal annealing in an argon atmosphere. From Our XRD analysis, it was revealed that the annealed samples were poly-crystalline and their crystallinity was improved with increasing annealing temperature. The constituent elements and their corresponding chemical states were identified using X-ray photoelectron spectroscopy. The obtained optical band gap of 1.4 eV for CATS thin film is found nearly equal to GaAs - one of the highly efficient thin film material for solar cell technology. Furthermore, our observed good optical absorbance and low transmittance for the annealed CATS thin films in the visible region of light spectrum assured the aptness of the CATS thin films for solar cell applications.

  1. Microwave plasma: its characteristics and applications in thin film technology

    Energy Technology Data Exchange (ETDEWEB)

    Musil, J.

    Microwave plasmas differ significantly from other plasmas, exhibit many interesting properties and so offer new possibilities for the plasma processing of thin films. Plasma properties strongly depend on the conditions and methods used to excite the gas. Due to the existence of a direct connection between the properties of plasma-prepared thin films and plasma micro-parameters a perfect knowledge of the plasma generation is a basic requirement for mastering a plasma deposition process. Therefore, different methods of generating microwave isotropic and anisotropic plasmas are discussed. Special attention is devoted to the mechanisms of plasma excitation and to the generation of a dense and homogeneous plasma in thin film technology are also presented.

  2. Thin-film metal hydrides for solar energy applications

    Energy Technology Data Exchange (ETDEWEB)

    Mongstad, Trygve Tveiteraas

    2012-11-01

    Thin-film metal hydrides may become important solar energy materials in the future. This thesis demonstrates interesting material properties of metal hydride films, relevant for applications as semiconducting materials for photovoltaic (PV) solar cells and for regulation of light using smart window technology.The work presented here has comprised an experimental study, focusing on three different materials: Magnesium hydride (MgH2), magnesium nickel hydride (Mg2NiH4) and yttrium hydride (YHx). Reactive sputter deposition was used to prepare the metal hydride film samples.This synthesis method is relatively uncommon for metal hydrides. Here,the first demonstration of reactive sputtering synthesis for YHx and Mg2NiH4 is given. Different challenges in forming singlephase, pure metal hydrides were identified: MgH2 could not be deposited without 3-16% metallic Mg present in the films, and YHx was found to react strong-ly to oxygen (O) during the deposition process. On the other hand, Mg2NiH4 films formed easily and apparently without major metallic clusters and with low O content.Mg2NiH4 is a semiconductor with an optical band gap that is suitable for PV solar cells. This study has showed that films with promising electrical and optical properties can be synthesized using reactive cosputtering of Mg and Ni. Using optical methods, the band gap for the as deposited samples was estimated to 1.54-1.76 eV, depending on the Mg-Ni composition. The asdeposited films were amorphous or nano-crystalline, but could be crystallized into the high-temperature fcc structure of Mg2NiH4 using heat treatment at 523 K. The band gap of the crystalline films was 2.1-2.2 eV, depending on the composition.A pronounced photochromic reaction to visible and UV light was observed for transparent yttrium hydride (T-YHx) samples. The optical transmission was reduced when the samples were illuminated, and the original optical transmission was restored when the samples were kept under dark conditions

  3. Application of clustering global optimization to thin film design problems.

    Science.gov (United States)

    Lemarchand, Fabien

    2014-03-10

    Refinement techniques usually calculate an optimized local solution, which is strongly dependent on the initial formula used for the thin film design. In the present study, a clustering global optimization method is used which can iteratively change this initial formula, thereby progressing further than in the case of local optimization techniques. A wide panel of local solutions is found using this procedure, resulting in a large range of optical thicknesses. The efficiency of this technique is illustrated by two thin film design problems, in particular an infrared antireflection coating, and a solar-selective absorber coating.

  4. Applications of thin carbon coatings and films in injection molding

    Science.gov (United States)

    Cabrera, Eusebio Duarte

    In this research, the technical feasibility of two novel applications of thin carbon coatings is demonstrated. The first application consists of using thin carbon coatings on molds for molding ultra-thin plastic parts (coated nanoparticle thin films or nanopapers to create a conductive top layer. During this research, the technical feasibility of a new approach was proven which provides injection molding of ultra-thin parts at lower pressures, without the need of fast heating/fast cooling or other expensive mold modification. An in-house developed procedure by other members of our group, was employed for coating the mold surface using chemical vapor deposition (CVD) resulting in a graphene coating with carbide bonding to the mold surface. The coating resulted in a significant decrease of surface friction and consequently easiness of flow when compared to their uncoated counterparts. Thermoplastic polymers and their composites are a very attractive alternative but are hindered by the non-conductive nature of polymers. There are two general approaches used to date to achieve EMI shielding for plastic products. One is to spray a conductive metal coating onto the plastic surface forming a layer that must maintain its shielding effectiveness (SE), and its adhesion to the plastic throughout the expected life of the product. However, metal coatings add undesirable weight and tend to corrode over time. Furthermore, scratching the coating may create shielding failure; therefore, a protective topcoat may be required. The other approach is to use polymer composites filled with conductive fillers such as carbon black (CB), carbon nanofiber (CNF), and carbon nanotube (CNT). While conductive fillers may increase the electrical conductivity of polymer composites, the loading of such fillers often cannot reach a high level (coated nanoparticle thin films or nanopapers to create a conductive top layer. For many years, in-mold coating (IMC) has been commercially applied to Sheet

  5. Investigation on Silicon Thin Film Solar Cells

    Institute of Scientific and Technical Information of China (English)

    2003-01-01

    The preparation, current status and trends are investigated for silicon thin film solar cells. The advantages and disadvantages of amorphous silicon thin film, polycrystalline silicon thin film and mono-crystalline silicon thin film solar cells are compared. The future development trends are pointed out. It is found that polycrystalline silicon thin film solar cells will be more promising for application with great potential.

  6. Biomimetic thin film synthesis

    Energy Technology Data Exchange (ETDEWEB)

    Graff, G.L.; Campbell, A.A.; Gordon, N.R.

    1995-05-01

    The purpose of this program is to develop a new process for forming thin film coatings and to demonstrate that the biomimetic thin film technology developed at PNL is useful for industrial applications. In the biomimetic process, mineral deposition from aqueous solution is controlled by organic functional groups attached to the underlying substrate surface. The coatings process is simple, benign, inexpensive, energy efficient, and particularly suited for temperature sensitive substrate materials (such as polymers). In addition, biomimetic thin films can be deposited uniformly on complex shaped and porous substrates providing a unique capability over more traditional line-of-sight methods.

  7. Pulsed laser deposited Al-doped ZnO thin films for optical applications

    Directory of Open Access Journals (Sweden)

    Gurpreet Kaur

    2015-02-01

    Full Text Available Highly transparent and conducting Al-doped ZnO (Al:ZnO thin films were grown on glass substrates using pulsed laser deposition technique. The profound effect of film thickness on the structural, optical and electrical properties of Al:ZnO thin films was observed. The X-ray diffraction depicts c-axis, plane (002 oriented thin films with hexagonal wurtzite crystal structure. Al-doping in ZnO introduces a compressive stress in the films which increase with the film thickness. AFM images reveal the columnar grain formation with low surface roughness. The versatile optical properties of Al:ZnO thin films are important for applications such as transparent electromagnetic interference (EMI shielding materials and solar cells. The obtained optical band gap (3.2–3.08 eV was found to be less than pure ZnO (3.37 eV films. The lowering in the band gap in Al:ZnO thin films could be attributed to band edge bending phenomena. The photoluminescence spectra gives sharp visible emission peaks, enables Al:ZnO thin films for light emitting devices (LEDs applications. The current–voltage (I–V measurements show the ohmic behavior of the films with resistivity (ρ~10−3 Ω cm.

  8. Characterisation of Pb thin films prepared by the nanosecond pulsed laser deposition technique for photocathode application

    Energy Technology Data Exchange (ETDEWEB)

    Lorusso, A., E-mail: antonella.lorusso@le.infn.it [Dipartimento di Matematica e Fisica “E. De Giorgi” and Istituto Nazionale di Fisica Nucleare, Università del Salento, Lecce 73100 (Italy); Gontad, F. [Dipartimento di Matematica e Fisica “E. De Giorgi” and Istituto Nazionale di Fisica Nucleare, Università del Salento, Lecce 73100 (Italy); Broitman, E. [Department of Physics, Chemistry and Biology (IFM), Linköping University, Linköping SE-581 83 (Sweden); Chiadroni, E. [Laboratori Nazionali di Frascati, Istituto Nazionale di Fisica Nucleare, Frascati 00044 (Italy); Perrone, A. [Dipartimento di Matematica e Fisica “E. De Giorgi” and Istituto Nazionale di Fisica Nucleare, Università del Salento, Lecce 73100 (Italy)

    2015-03-31

    Pb thin films were prepared by the nanosecond pulsed laser deposition technique on Si (100) and polycrystalline Nb substrates for photocathode application. As the photoemission performances of a cathode are strongly affected by its surface characteristics, the Pb films were grown at different substrate temperatures with the aim of modifying the morphology and structure of thin films. An evident morphological modification in the deposited films with the formation of spherical grains at higher temperatures has been observed. X-ray diffraction measurements showed that a preferred orientation of Pb (111) normal to the substrate was achieved at 30 °C while the Pb (200) plane became strongly pronounced with the increase in the substrate temperature. Finally, a Pb thin film deposited on Nb substrate at 30 °C and tested as the photocathode showed interesting results for the application of such a device in superconducting radio frequency guns. - Highlights: • Pb thin films obtained by the nanosecond pulsed laser deposition technique at different substrate temperature. • The substrate temperature modifies the morphology and structure of Pb films. • Pb thin film was deposited at room temperature for photocathode application. • The Pb thin film photocathode was tested and the quantum efficiency of the device improved after laser cleaning treatment of the film surface.

  9. Multifunctional thin film surface

    Energy Technology Data Exchange (ETDEWEB)

    Brozik, Susan M.; Harper, Jason C.; Polsky, Ronen; Wheeler, David R.; Arango, Dulce C.; Dirk, Shawn M.

    2015-10-13

    A thin film with multiple binding functionality can be prepared on an electrode surface via consecutive electroreduction of two or more aryl-onium salts with different functional groups. This versatile and simple method for forming multifunctional surfaces provides an effective means for immobilization of diverse molecules at close proximities. The multifunctional thin film has applications in bioelectronics, molecular electronics, clinical diagnostics, and chemical and biological sensing.

  10. Sputtered Modified Barium Titanate for Thin-Film Capacitor Applications

    Directory of Open Access Journals (Sweden)

    Robert Mamazza

    2012-04-01

    Full Text Available New apparatus and a new process for the sputter deposition of modified barium titanate thin-films were developed. Films were deposited at temperatures up to 900 °C from a Ba0.96Ca0.04Ti0.82Zr0.18O3 (BCZTO target directly onto Si, Ni and Pt surfaces and characterized by X-ray diffraction (XRD, scanning electron microscopy (SEM and X-ray photoelectron spectroscopy (XPS. Film texture and crystallinity were found to depend on both deposition temperature and substrate: above 600 °C, the as-deposited films consisted of well-facetted crystallites with the cubic perovskite structure. A strongly textured Pt (111 underlayer enhanced the (001 orientation of BCZTO films deposited at 900 °C, 10 mtorr pressure and 10% oxygen in argon. Similar films deposited onto a Pt (111 textured film at 700 °C and directly onto (100 Si wafers showed relatively larger (011 and diminished intensity (00ℓ diffraction peaks. Sputter ambients containing oxygen caused the Ni underlayers to oxidize even at 700 °C: Raising the process temperature produced more diffraction peaks of NiO with increased intensities. Thin-film capacitors were fabricated using ~500 nm thick BCZTO dielectrics and both Pt and Ni top and bottom electrodes. Small signal capacitance measurements were carried out to determine capacitance and parallel resistance at low frequencies and from these data, the relative permittivity (er and resistivity (r of the dielectric films were calculated; values ranged from ~50 to >2,000, and from ~104 to ~1010 Ω∙cm, respectively.

  11. Thin films for material engineering

    Science.gov (United States)

    Wasa, Kiyotaka

    2016-07-01

    Thin films are defined as two-dimensional materials formed by condensing one by one atomic/molecular/ionic species of matter in contrast to bulk three-dimensional sintered ceramics. They are grown through atomic collisional chemical reaction on a substrate surface. Thin film growth processes are fascinating for developing innovative exotic materials. On the basis of my long research on sputtering deposition, this paper firstly describes the kinetic energy effect of sputtered adatoms on thin film growth and discusses on a possibility of room-temperature growth of cubic diamond crystallites and the perovskite thin films of binary compound PbTiO3. Secondly, high-performance sputtered ferroelectric thin films with extraordinary excellent crystallinity compatible with MBE deposited thin films are described in relation to a possible application for thin-film MEMS. Finally, the present thin-film technologies are discussed in terms of a future material science and engineering.

  12. Thin As-Se-Sb Films as Potential Medium for Optics and Sensor Application

    Science.gov (United States)

    Ilcheva, Vania; Boev, V.; Petkova, T.; Petkov, Plamen; Petkov, Emil; Socol, G.; Mihailescu, I. N.

    Thin films have been deposited onto quartz substrates by the pulsed laser deposition (PLD) method from the corresponding glassy bulk As-Se-Sb chalcogenide materials. Photoinduced changes have been observed after illumination of the films with a Xe lamp. The transmission spectra of the thin films have been measured before and after irradiation and the optical constants have been derived by the Swanepoel method. The results suggest feasible applications of these materials for waveguide-sensors.

  13. Diamond thin films: giving biomedical applications a new shine.

    Science.gov (United States)

    Nistor, P A; May, P W

    2017-09-01

    Progress made in the last two decades in chemical vapour deposition technology has enabled the production of inexpensive, high-quality coatings made from diamond to become a scientific and commercial reality. Two properties of diamond make it a highly desirable candidate material for biomedical applications: first, it is bioinert, meaning that there is minimal immune response when diamond is implanted into the body, and second, its electrical conductivity can be altered in a controlled manner, from insulating to near-metallic. In vitro, diamond can be used as a substrate upon which a range of biological cells can be cultured. In vivo, diamond thin films have been proposed as coatings for implants and prostheses. Here, we review a large body of data regarding the use of diamond substrates for in vitro cell culture. We also detail more recent work exploring diamond-coated implants with the main targets being bone and neural tissue. We conclude that diamond emerges as one of the major new biomaterials of the twenty-first century that could shape the way medical treatment will be performed, especially when invasive procedures are required. © 2017 The Authors.

  14. Applications of thin-film sandwich crystallization platforms

    Energy Technology Data Exchange (ETDEWEB)

    Axford, Danny, E-mail: danny.axford@diamond.ac.uk; Aller, Pierre; Sanchez-Weatherby, Juan; Sandy, James [Diamond Light Source, Harwell Oxford, Didcot OX11 0DE (United Kingdom)

    2016-03-24

    Crystallization via sandwiches of thin polymer films is presented and discussed. Examples are shown of protein crystallization in, and data collection from, solutions sandwiched between thin polymer films using vapour-diffusion and batch methods. The crystallization platform is optimal for both visualization and in situ data collection, with the need for traditional harvesting being eliminated. In wells constructed from the thinnest plastic and with a minimum of aqueous liquid, flash-cooling to 100 K is possible without significant ice formation and without any degradation in crystal quality. The approach is simple; it utilizes low-cost consumables but yields high-quality data with minimal sample intervention and, with the very low levels of background X-ray scatter that are observed, is optimal for microcrystals.

  15. PZT thin film deposition techniques, properties and its application in ultrasonic MEMS sensors: a review

    Science.gov (United States)

    Shilpa, G. D.; Sreelakshmi, K.; Ananthaprasad, M. G.

    2016-09-01

    This paper describes an overview of the state of art in PbZrxTi1-xO3 (PZT)ferroelectric thin films and its applications in Micro Electro Mechanical Systems (MEMS). First, the deposition techniques and then the important properties of PZT films such as surface morphology polarization and ferroelectric properties are reviewed. Two major deposition techniques such as sol-gel and Magnetron sputtering are given and compared for the film surface morphology and ferroelectric properties. Finally, the application of PZT thin film in MEMS ultrasonic sensors is discussed.

  16. Rapid Recrystallization of Semiconductor Thin Films for Photovoltaic Applications

    Science.gov (United States)

    Mooney, George David

    Photovoltaics promise to be an important source of energy for the future. Unlike fossil fuels, this resource is clean and virtually unlimited. Although the technology is developed, photovoltaics are not used widely because the costs are not yet competitive with fossil fuels. One of the most promising materials for use in photovoltaic devices is thin film polycrystalline CuInSe _2. This material holds the current energy conversion efficiency record for a polycrystalline thin film material. The techniques used to produce these devices, however, have features undesirable for mass production such as highly toxic gases and lengthy thermal anneals. The goal of this work was to explore new, safe methods of fabricating device quality CuInSe_2. Fundamental characterization techniques showed the properties of the co-deposited films subjected to Rapid Thermal Processing (RTP) to be comparable, and in some cases superior, to films grown by more conventional methods. Characterization included structural and phase studies by X-ray diffraction analysis, investigation of optical properties and electronic band structures by reflection and transmission spectroscopy, studies of composition and modeling the dynamics of film growth during the process by electron probe for microanalysis, and the effects of the process on grain growth and morphology by scanning electron microscopy. Rapid thermal processing of vacuum co-deposited Cu, In, and Se subjects films to a heating by radiation using tungsten quartz lamps. Using this method, we successfully fabricated photovoltaic device quality CuInSe_2 using post-deposition processing times of less than two minutes. All processing was carried out in an inert argon atmosphere. Films processed by this method were nearly single phase CuInSe_2 with the expected chalcopyrite structure (tetragonal symmetry) and the expected lattice parameters. The optical spectroscopy showed a distinct, direct valence to conduction band transition of 1.0 eV and a spin

  17. Thin Films

    Directory of Open Access Journals (Sweden)

    M. Benmouss

    2003-01-01

    the optical absorption are consistent with the film color changes. Finally, the optical and electrochromic properties of the films prepared by this method are compared with those of our sputtered films already studied and with other works.

  18. Handbook of thin film technology

    CERN Document Server

    Frey, Hartmut

    2015-01-01

    “Handbook of Thin Film Technology” covers all aspects of coatings preparation, characterization and applications. Different deposition techniques based on vacuum and plasma processes are presented. Methods of surface and thin film analysis including coating thickness, structural, optical, electrical, mechanical and magnetic properties of films are detailed described. The several applications of thin coatings and a special chapter focusing on nanoparticle-based films can be found in this handbook. A complete reference for students and professionals interested in the science and technology of thin films.

  19. Properties and practical application of thin CeOx films

    Directory of Open Access Journals (Sweden)

    Maksimchuk N. V.

    2010-10-01

    Full Text Available The properties of CeOx films produced by various methods have been investigated. According to the comparative analisys “metallic mirror oxidation” method allows to produce films with significantly better characteristics than the «explosive evaporation» method. Though the latter method yields higher photosensitivity of CeOx films and structures on their base. In the process the optimal value of the substrate temperature was determined. Obtained data expand the CeOx application potential in microelectronic sensor sphere.

  20. Fish gelatin thin film standards for biological application of PIXE

    Science.gov (United States)

    Manuel, Jack E.; Rout, Bibhudutta; Szilasi, Szabolcs Z.; Bohara, Gyanendra; Deaton, James; Luyombya, Henry; Briski, Karen P.; Glass, Gary A.

    2014-08-01

    There exists a critical need to understand the flow and accumulation of metallic ions, both naturally occurring and those introduced to biological systems. In this paper the results of fabricating thin film elemental biological standards containing nearly any combination of trace elements in a protein matrix are presented. Because it is capable of high elemental sensitivity, particle induced X-ray emission spectrometry (PIXE) is an excellent candidate for in situ analysis of biological tissues. Additionally, the utilization of microbeam PIXE allows the determination of elemental concentrations in and around biological cells. However, obtaining elemental reference standards with the same matrix constituents as brain tissue is difficult. An excellent choice for simulating brain-like tissue is Norland® photoengraving glue which is derived from fish skin. Fish glue is water soluble, liquid at room temperature, and resistant to dilute acid. It can also be formed into a thin membrane which dries into a durable, self-supporting film. Elements of interest are introduced to the fish glue in precise volumetric additions of well quantified atomic absorption standard solutions. In this study GeoPIXE analysis package is used to quantify elements intrinsic to the fish glue as well as trace amounts of manganese added to the sample. Elastic (non-Rutherford) backscattered spectroscopy (EBS) and the 1.734 MeV proton-on-carbon 12C(p,p)12C resonance is used for a normalization scheme of the PIXE spectra to account for any discrepancies in X-ray production arising from thickness variation of the prepared standards. It is demonstrated that greater additions of the atomic absorption standard cause a viscosity reduction of the liquid fish glue resulting in thinner films but the film thickness can be monitored by using simultaneous PIXE and EBS proton data acquisition.

  1. Solution-Processed Rare-Earth Oxide Thin Films for Alternative Gate Dielectric Application.

    Science.gov (United States)

    Zhuang, Jiaqing; Sun, Qi-Jun; Zhou, Ye; Han, Su-Ting; Zhou, Li; Yan, Yan; Peng, Haiyan; Venkatesh, Shishir; Wu, Wei; Li, Robert K Y; Roy, V A L

    2016-11-16

    Previous investigations on rare-earth oxides (REOs) reveal their high possibility as dielectric films in electronic devices, while complicated physical methods impede their developments and applications. Herein, we report a facile route to fabricate 16 REOs thin insulating films through a general solution process and their applications in low-voltage thin-film transistors as dielectrics. The formation and properties of REOs thin films are analyzed by atomic force microscopy (AFM), X-ray diffraction (XRD), spectroscopic ellipsometry, water contact angle measurement, X-ray photoemission spectroscopy (XPS), and electrical characterizations, respectively. Ultrasmooth, amorphous, and hydrophilic REO films with thickness around 10 nm have been obtained through a combined spin-coating and postannealing method. The compositional analysis results reveal the formation of RE hydrocarbonates on the surface and silicates at the interface of REOs films annealed on Si substrate. The dielectric properties of REO films are investigated by characterizing capacitors with a Si/Ln2O3/Au (Ln = La, Gd, and Er) structure. The observed low leakage current densities and large areal capacitances indicate these REO films can be employed as alternative gate dielectrics in transistors. Thus, we have successfully fabricated a series of low-voltage organic thin-film transistors based on such sol-gel derived REO films to demonstrate their application in electronics. The optimization of REOs dielectrics in transistors through further surface modification has also been studied. The current study provides a simple solution process approach to fabricate varieties of REOs insulating films, and the results reveal their promising applications as alternative gate dielectrics in thin-film transistors.

  2. FePt Thin Films: Fundamentals and Applications

    NARCIS (Netherlands)

    Lodder, J.C.; Nguyen, L.T.

    2005-01-01

    Recently, high magnetic anisotropy materials have received much attention to meet the demands of applications in the field of information technologies (Magnetic Films: Anisotropy). For example, in magnetic recording, as the bit size is reduced to nano dimension, material with high Ku value is needed

  3. Optical and structural properties of sputtered CdS films for thin film solar cell applications

    Energy Technology Data Exchange (ETDEWEB)

    Kim, Donguk [School of Electronic and Electrical Engineering, Sungkyunkwan University, Cheoncheon-dong 300, Jangan-gu, Suwon 440-746 (Korea, Republic of); Park, Young [High-Speed Railroad Infrastructure System Research Team, Korea Railroad Research Institute, Uiwang 437-757 (Korea, Republic of); Kim, Minha [School of Electronic and Electrical Engineering, Sungkyunkwan University, Cheoncheon-dong 300, Jangan-gu, Suwon 440-746 (Korea, Republic of); Choi, Youngkwan [Water Facility Research Center, K-water, 125, 1689 Beon-gil, Yuseong-daero, Yuseong-gu, Daejeon 305-730 (Korea, Republic of); Park, Yong Seob [Department of Photoelectronics Information, Chosun College of Science and Technology, Gwangju (Korea, Republic of); Lee, Jaehyoeng, E-mail: jaehyeong@skku.edu [School of Electronic and Electrical Engineering, Sungkyunkwan University, Cheoncheon-dong 300, Jangan-gu, Suwon 440-746 (Korea, Republic of)

    2015-09-15

    Graphical abstract: Photo current–voltage curves (a) and the quantum efficiency (QE) (b) for the solar cell with CdS film grown at 300 °C. - Highlights: • CdS thin films were grown by a RF magnetron sputtering method. • Influence of growth temperature on the properties of CdS films was investigated. • At higher T{sub g}, the crystallinity of the films improved and the grains enlarged. • CdS/CdTe solar cells with efficiencies of 9.41% were prepared at 300 °C. - Abstract: CdS thin films were prepared by radio frequency magnetron sputtering at various temperatures. The effects of growth temperature on crystallinity, surface morphology and optical properties of the films were characterized with X-ray diffraction (XRD), field emission scanning electron microscopy (FESEM), Raman spectra, UV–visible spectrophotometry, and photoluminescence (PL) spectra. As the growth temperature was increased, the crystallinity of the sputtered CdS films was improved and the grains were enlarged. The characteristics of CdS/CdTe thin film solar cell appeared to be significantly influenced by the growth temperature of the CdS films. Thin film CdS/CdTe solar cells with efficiencies of 9.41% were prepared at a growth temperature of 300 °C.

  4. Multilevel organization in hybrid thin films for optoelectronic applications.

    Science.gov (United States)

    Vohra, Varun; Bolognesi, Alberto; Calzaferri, Gion; Botta, Chiara

    2009-10-20

    In this work we report two simple approaches to prepare hybrid thin films displaying a high concentration of zeolite crystals that could be used as active layers in optoelectronic devices. In the first approach, in order to organize nanodimensional zeolite crystals of 40 nm diameter in an electroactive environment, we chemically modify their external surface and play on the hydrophilic/hydrophobic forces. We obtain inorganic nanocrystals that self-organize in honeycomb electroluminescent polymer structures obtained by breath figure formation. The different functionalizations of the zeolite surface result in different organizations inside the cavities of the polymeric structure. The second approach involving soft-litography techniques allows one to arrange single dye-loaded zeolite L crystals of 800 nm of length by mechanical loading into the nanocavities of a conjugated polymer. Both techniques result in the formation of thin hybrid films displaying three levels of organization: organization of the dye molecules inside the zeolite nanochannels, organization of the zeolite crystals inside the polymer cavities, and micro- or nanostructuration of the polymer.

  5. Thin-film Solar Cells for Space Applications

    Science.gov (United States)

    Lush, Gregory B.

    2003-01-01

    The proposed work supports MURED goals by fostering research and development activities at Fisk and UTEP which contribute substantially to NASA's mission, preparing faculty and students at Fisk and UTEP to successfully participate in the conventional, competitive research and education process, and increasing the number of students to successfully complete degrees in NASA related fields. The project also addresses directly a core need of NASA for space power and is consistent with the Core Responsibilities of the John Glenn Space Center. Current orbital missions are limited by radiation from high energy particles trapped in the Van Allen Belt because that solar radiation degrades cell performance by damaging the crystalline lattice. Some potential orbits have been inaccessible because the radiation is too severe. Thin-film solar cells, if they can be adapted for use in the unfriendly space environment, could open new orbits to satellites by providing a radiation hard source of power. The manned mission to Mars requires photovoltaic devices for both the trip there and as a power supply on the surface. Solar arrays using thin films offer a low power/weight ratio solution that provides reliable photovoltaic power.

  6. Characterization of MAPLE deposited WO3 thin films for electrochromic applications

    Science.gov (United States)

    Boyadjiev, S. I.; Stefan, N.; Szilágyi, I. M.; Mihailescu, N.; Visan, A.; Mihailescu, I. N.; Stan, G. E.; Besleaga, C.; Iliev, M. T.; Gesheva, K. A.

    2017-01-01

    Tungsten trioxide (WO3) is a widely studied material for electrochromic applications. The structure, morphology and optical properties of WO3 thin films, grown by matrix assisted pulsed laser evaporation (MAPLE) from monoclinic WO3 nano-sized particles, were investigated for their possible application as electrochromic layers. A KrF* excimer (λ=248 nm, ζFWHM=25 ns) laser source was used in all experiments. The MAPLE deposited WO3 thin films were studied by atomic force microscopy (AFM), grazing incidence X-ray diffraction (GIXRD) and Fourier transform infrared spectroscopy (FTIR). Cyclic voltammetry measurements were also performed, and the coloring and bleaching were observed. The morpho-structural investigations disclosed the synthesis of single-phase monoclinic WO3 films consisting of crystalline nano-grains embedded in an amorphous matrix. All thin films showed good electrochromic properties, thus validating application of the MAPLE deposition technique for the further development of electrochromic devices.

  7. EDTA-Decorated Nanostructured ZnO/CdS Thin Films for Oxygen Gas Sensing Applications

    Science.gov (United States)

    Arunraja, L.; Thirumoorthy, P.; Karthik, A.; Rajendran, V.; Edwinpaul, L.

    2016-08-01

    ZnO/CdS and ZnO/CdS-EDTA nanostructured thin films were prepared on a glass substrate using spin-coating and used for oxygen gas sensor applications. The structural properties of both ZnO/CdS and ZnO/CdS-EDTA nanostructured composites were comparatively characterized. The nanostructure thin film was found in a hexagonal structure with an average crystallite size reduced from 77 nm to 29 nm due to the influence of the EDTA. The optical absorption, photo luminescence, functional groups and surface morphology of the nanostructured thin films were comprehensively investigated. Oxygen was suitably tailored to verify the sensor response over a concentration range of 10-50 ppm at room temperature. Thus, the sensor studies reveal that the performance, response, and recovery time were enhanced in ZnO/CdS-EDTA nanostructured thin film compared with ZnO/CdS.

  8. Evaluation of thin-film solar cell temperature coefficients for space applications

    Energy Technology Data Exchange (ETDEWEB)

    Liu, Simon H.; Simburger, Edward J.; Matsumoto, James; Garcia, Alexander; Ross, Jasen; Nocerino, John [Aerospace Corp., Los Angeles, CA (United States)

    2005-07-01

    At present, commercially available thin-film photovoltaic cells are evaluated for terrestrial applications. To apply thin-film photovoltaic cells for space applications, the assessment of the solar cell performance must be conducted in simulated space conditions. We investigated the temperature coefficients of the I-V characteristics of thin-film amorphous silicon (a-Si) solar cells manufactured by Uni-Solar and Iowa Thin Film Technologies, and CuInGaSe{sub 2} (CIGS) solar cells manufactured by MicroSat Systems with simulated space solar radiation. The temperature coefficient of the thin-film solar cells between temperatures of 15 and 100 deg C was measured with a temperature-controlled vacuum plate. The vacuum plate ensures maximum thermal contact between the plate and the solar cell as well as reducing the thermal gradient in the solar cell. The vacuum plate also serves as a thermal reservoir that provides temperature stability during the performance evaluation when the solar cell is exposed to simulated sunlight radiation. An X-25 sunlight simulator calibrated for AMO conditions provides the necessary radiation in performance characterization of the thin-film solar cell. The I-V characteristics of the solar cell were obtained at various temperatures to gain a thorough knowledge of the cell's performance at different temperatures. (Author)

  9. Characterization of novel BaZnSnO thin films by solution process and applications in thin film transistors

    Energy Technology Data Exchange (ETDEWEB)

    Li, Jun, E-mail: lijun_yt@163.com [School of Material Science and Engineering, Shanghai University, Jiading, Shanghai 201800 (China); Key Laboratory of Advanced Display and System Applications, Ministry of Education, Shanghai University, Shanghai 200072 (China); Huang, Chuan-Xin [School of Material Science and Engineering, Shanghai University, Jiading, Shanghai 201800 (China); Zhang, Jian-Hua, E-mail: jhzhang@staff.shu.edu.cn [Key Laboratory of Advanced Display and System Applications, Ministry of Education, Shanghai University, Shanghai 200072 (China); Zhu, Wen-Qing; Jiang, Xue-Yin [School of Material Science and Engineering, Shanghai University, Jiading, Shanghai 201800 (China); Zhang, Zhi-Lin [School of Material Science and Engineering, Shanghai University, Jiading, Shanghai 201800 (China); Key Laboratory of Advanced Display and System Applications, Ministry of Education, Shanghai University, Shanghai 200072 (China)

    2015-08-15

    Graphical abstract: This work reports the Ba content on thin film transistor based on a novel BaZnSnO semiconductor using solution process. - Highlights: • No reports about BaZnSnO thin film using solution process. • BaZnSnO thin film transistor (TFT) was firstly fabricated. • BaZnSnO-TFT shows a acceptable performace. • Influence of Ba content on BaZnSnO-TFT. - Abstract: A novel BaZnSnO semiconductor is fabricated using solution process and the influence of Ba addition on the structure, the chemical state of oxygen and electrical performance of BaZnSnO thin films are investigated. A high performance BaZnSnO-based thin film transistor with 15 mol% Ba is obtained, showing a saturation mobility of 1.94 cm{sup 2}/V s, a threshold voltage of 3.6 V, an on/off current ratio of 6.2 × 10{sup 6}, a subthreshold swing of 0.94 V/decade, and a good bias stability. Transistors with solution processed BaZnSnO films are promising candidates for the development of future large-area, low-cost and high-performance electronic devices.

  10. Study of NbC thin films for soft X-ray multilayer applications

    Energy Technology Data Exchange (ETDEWEB)

    Singh, Amol, E-mail: amolphy@rrcat.gov.in, E-mail: rrcat.amol@gmail.com; Modi, Mohammed H.; Lodha, G. S. [Indus Synchrotrons Utilization Division, Raja Ramanna Centre for Advanced Technology, Indore-452013 (India); Rajput, Parasmani; Jha, S. N. [Atomic & Molecular Physics Division, Bhabha Atomic Research Centre, Trombay, Mumbai-400085 (India)

    2015-06-24

    Compound materials are being used in soft x-ray and Extreme ultraviolet (EUV) optics applications. Structural properties of compound materials changes drastically when ultrathin films are formed from bulk material. Structural properties need to be investigated to determine the suitability of compound materials in soft x-ray multilayer applications. In the present study Niobium carbide (NbC) thin films were deposited using ion beam sputtering of an NbC target on Si (100) substrate. Thickness roughness and film mass density was determined from the X-ray reflectivity (XRR) data. XRR data revealed that the film mass density was increasing with increase in film thickness. For 500Ǻ thick film, mass density of 6.85 g/cm{sup 3}, close to bulk density was found. Rms roughness for all the films was less than 10Å. Local structure of NbC thin films was determined from EXAFS measurements. The EXAFS data showed an increase in Nb-C and Nb-(C)-Nb peak ratio approaches towards bulk NbC with increasing thickness of NbC. From the present study, NbC thin films were found suitable for actual use in soft x-ray multilayer applications.

  11. Study of NbC thin films for soft X-ray multilayer applications

    Science.gov (United States)

    Singh, Amol; Modi, Mohammed. H.; Rajput, Parasmani; Jha, S. N.; Lodha, G. S.

    2015-06-01

    Compound materials are being used in soft x-ray and Extreme ultraviolet (EUV) optics applications. Structural properties of compound materials changes drastically when ultrathin films are formed from bulk material. Structural properties need to be investigated to determine the suitability of compound materials in soft x-ray multilayer applications. In the present study Niobium carbide (NbC) thin films were deposited using ion beam sputtering of an NbC target on Si (100) substrate. Thickness roughness and film mass density was determined from the X-ray reflectivity (XRR) data. XRR data revealed that the film mass density was increasing with increase in film thickness. For 500Å thick film, mass density of 6.85 g/cm3, close to bulk density was found. Rms roughness for all the films was less than 10Å. Local structure of NbC thin films was determined from EXAFS measurements. The EXAFS data showed an increase in Nb-C and Nb-(C)-Nb peak ratio approaches towards bulk NbC with increasing thickness of NbC. From the present study, NbC thin films were found suitable for actual use in soft x-ray multilayer applications.

  12. Applications of thin-film sandwich crystallization platforms.

    Science.gov (United States)

    Axford, Danny; Aller, Pierre; Sanchez-Weatherby, Juan; Sandy, James

    2016-04-01

    Examples are shown of protein crystallization in, and data collection from, solutions sandwiched between thin polymer films using vapour-diffusion and batch methods. The crystallization platform is optimal for both visualization and in situ data collection, with the need for traditional harvesting being eliminated. In wells constructed from the thinnest plastic and with a minimum of aqueous liquid, flash-cooling to 100 K is possible without significant ice formation and without any degradation in crystal quality. The approach is simple; it utilizes low-cost consumables but yields high-quality data with minimal sample intervention and, with the very low levels of background X-ray scatter that are observed, is optimal for microcrystals.

  13. Application of positrons to the study of thin technological films

    CERN Document Server

    Nathwani, M

    2001-01-01

    Positron Doppler broadening experiments using variable-energy positron beams with positron implantation energy range 0-25 keV and 0-30 keV, respectively, have been performed on a selection of thin technological films. By measuring the spectrum of the 511 keV annihilation gamma-rays photopeak the profile of the Doppler broadening of the photopeak, due to the motion of the annihilating positron-electron pair, can be analysed. Varying the incident positron energy enables the positron t$ probe a sample at different depths which makes it possible to study samples by analysing the Doppler broadening of the photopeak as a function of positron depth. The Doppler broadening experiments on gallium nitride films with different crystallographic orientations revealed distortions in the Doppler broadened profile at low energies. The distortions were identified to be a consequence of significant para-positronium annihilation taking place near the sample surface. A parameter based on the proportion of positrons trapped at an...

  14. Effective material parameter retrieval for thin sheets: theory and application to graphene, thin silver films, and single-layer metamaterials

    CERN Document Server

    Tassin, Philippe; Soukoulis, Costas M; 10.1016/j.physb.2012.01.119

    2012-01-01

    An important tool in the field of metamaterials is the extraction of effective material parameters from simulated or measured scattering parameters of a sample. Here we discuss a retrieval method for thin-film structures that can be approximated by a two-dimensional scattering sheet. We determine the effective sheet conductivity from the scattering parameters and we point out the importance of the magnetic sheet current to avoid an overdetermined inversion problem. Subsequently, we present two applications of the sheet retrieval method. First, we determine the effective sheet conductivity of thin silver films and we compare the resulting conductivities with the sheet conductivity of graphene. Second, we apply the method to a cut-wire metamaterial with an electric dipole resonance. The method is valid for thin-film structures such as two-dimensional metamaterials and frequency-selective surfaces and can be easily generalized for anisotropic or chiral media.

  15. Effective material parameter retrieval for thin sheets: theory and application to graphene, thin silver films, and single-layer metamaterials

    Energy Technology Data Exchange (ETDEWEB)

    Tassin, Philippe; Koschny, Thomas; Soukoulis, Costas

    2012-01-30

    An important tool in the field of metamaterials is the extraction of effective material parameters from simulated or measured scattering parameters of a sample. Here we discuss a retrieval method for thin-film structures that can be approximated by a two-dimensional scattering sheet. We determine the effective sheet conductivity from the scattering parameters and we point out the importance of the magnetic sheet current to avoid an overdetermined inversion problem. Subsequently, we present two applications of the sheet retrieval method. First, we determine the effective sheet conductivity of thin silver films and we compare the resulting conductivities with the sheet conductivity of graphene. Second, we apply the method to a cut-wire metamaterial with an electric dipole resonance. The method is valid for thin-film structures such as two-dimensional metamaterials and frequency-selective surfaces and can be easily generalized for anisotropic or chiral media.

  16. Effective material parameter retrieval for thin sheets: Theory and application to graphene, thin silver films, and single-layer metamaterials

    Energy Technology Data Exchange (ETDEWEB)

    Tassin, Philippe, E-mail: tassin@ameslab.gov [Ames Laboratory - U.S. DOE and Department of Physics and Astronomy, Iowa State University, Ames, IA 50011 (United States); Koschny, Thomas, E-mail: koschny@ameslab.gov [Ames Laboratory - U.S. DOE and Department of Physics and Astronomy, Iowa State University, Ames, IA 50011 (United States); Soukoulis, Costas M., E-mail: soukoulis@ameslab.gov [Ames Laboratory - U.S. DOE and Department of Physics and Astronomy, Iowa State University, Ames, IA 50011 (United States); Institute of Electronic Structure and Lasers (IESL), FORTH, 71110 Heraklion, Crete (Greece)

    2012-10-15

    An important tool in the field of metamaterials is the extraction of effective material parameters from simulated or measured scattering parameters of a sample. Here we discuss a retrieval method for thin-film structures that can be approximated by a two-dimensional scattering sheet. We determine the effective sheet conductivity from the scattering parameters and we point out the importance of the magnetic sheet current to avoid an overdetermined inversion problem. Subsequently, we present two applications of the sheet retrieval method. First, we determine the effective sheet conductivity of thin silver films and we compare the resulting conductivities with the sheet conductivity of graphene. Second, we apply the method to a cut-wire metamaterial with an electric dipole resonance. The method is valid for thin-film structures such as two-dimensional metamaterials and frequency-selective surfaces and can be easily generalized for anisotropic or chiral media.

  17. Application of sub-micrometer patterned permalloy thin film in tunable radio frequency inductors

    Energy Technology Data Exchange (ETDEWEB)

    Rahman, B.M. Farid; Divan, Ralu; Rosenmann, Daniel; Wang, Tengxing; Peng, Yujia; Wang, Guoan

    2015-01-01

    Electrical tunable meander line inductor using coplanar waveguide structures with patterned permalloy (Py) thin film has been designed and implemented in this paper. High resistivity Si substrate is used to reduce the dielectric loss from the substrate. Inductor is implemented with a 60 nm thick Py deposited and patterned on top of the gold meander line, and Py film is patterned with dimension of 440 nm 10 lm to create the shape anisotropy field, which in turn increases the FMR frequency. Compared to a regular meanderline inductor without the application of sub-micrometer patterned Py thin film, the inductance density has been increased to 20% for the implemented inductor with patterned Py. Measured FMR frequency of the patterned Py is 4.51 GHz without the application of any external magnetic field. This has enabled the inductor application in the practical circuit boards, where the large external magnet is unavailable. Inductance tunability of the implemented inductor is demonstrated by applying a DC current. Applied DC current creates a magnetic field along the hard axis of the patterned Py thin film, which changes the magnetic moment of the thin film and thus, decreases the inductance of the line. Measured results show that the inductance density of the inductor can be varied 5% by applying 300 mA DC current, larger inductance tunability is achievable by increasing the thickness of Py film. VC 2015 AIP Publishing LLC. [http://dx.doi.org/10.1063/1.4918766

  18. Selective inorganic thin films

    Energy Technology Data Exchange (ETDEWEB)

    Phillips, M.L.F.; Weisenbach, L.A.; Anderson, M.T. [Sandia National Laboratories, Albuquerque, NM (United States)] [and others

    1995-05-01

    This project is developing inorganic thin films as membranes for gas separation applications, and as discriminating coatings for liquid-phase chemical sensors. Our goal is to synthesize these coatings with tailored porosity and surface chemistry on porous substrates and on acoustic and optical sensors. Molecular sieve films offer the possibility of performing separations involving hydrogen, air, and natural gas constituents at elevated temperatures with very high separation factors. We are focusing on improving permeability and molecular sieve properties of crystalline zeolitic membranes made by hydrothermally reacting layered multicomponent sol-gel films deposited on mesoporous substrates. We also used acoustic plate mode (APM) oscillator and surface plasmon resonance (SPR) sensor elements as substrates for sol-gel films, and have both used these modified sensors to determine physical properties of the films and have determined the sensitivity and selectivity of these sensors to aqueous chemical species.

  19. Optical band gap tuning of Sb-Se thin films for xerographic based applications

    Science.gov (United States)

    Kaur, Ramandeep; Singh, Palwinder; Singh, Kulwinder; Kumar, Akshay; Thakur, Anup

    2016-10-01

    In the present paper we have studied the effect of Sb addition on the optical band gap tuning of thermally evaporated SbxSe100-x (x = 0, 5, 20, 50 and 60) thin films. The structural investigations revealed that all thin films were amorphous in nature. Transmission spectrum was taken in the range 400-2500 nm shows that all films are highly transparent in the near infrared region. The fundamental absorption edge shifts towards longer wavelength with Sb incorporation. The optical band gap decreases with addition of antimony in a-Se thin films. A good correlation has been drawn between experimentally estimated and theoretically calculated optical band gap. The decrease in optical band gap of thin films has been explained using chemical bond approach and density of states model. Decrease in optical band gap with Sb addition increases the concentration of electron deep traps which increases the X-ray sensitivity of Sb-Se thin films. Thus by tuning the optical band gap of Sb-Se alloy, it could be utilized for xerographic based applications.

  20. Ellipsometric Characterization of Thin Films from Multicomponent Chalcogenide Glasses for Application in Modern Optical Devices

    Directory of Open Access Journals (Sweden)

    R. Todorov

    2013-01-01

    Full Text Available A review is given on the application of the reflectance ellipsometry for optical characterization of bulk materials and thin films with thickness between λ/20 and 2λ (at λ=632.8 nm. The knowledge of the optical constants (refractive index, n, and extinction coefficient, k of thin films is of a great importance from the point of view of modelling and controlling the manufacture of various optical elements, such as waveguides, diffraction gratings, and microlenses. The presented results concern the optical properties of thin films from multicomponent chalcogenide glasses on the base of As2S3 and GeS2 determined by multiple-angle-of-incidence ellipsometry and regarded as a function of the composition and thickness. The homogeneity of the films is verified by applying single-angle calculations at different angles. Due to decomposition of the bulk glass during thermal evaporation, an optical inhomogeneity of the thin As (Ge-S-Bi(Tl films is observed. The profile of n in depth of thin As-S-Tl (Bi films was investigated by evaporation of discrete layers. It is demonstrated that homogenous layers from the previous compounds with controlled composition can be deposited by coevaporation of As2S3 and metals or their compounds (Bi, Tl, In2S3.

  1. High Performance Infrared Plasmonic Metamaterial Absorbers and Their Applications to Thin-film Sensing

    KAUST Repository

    Yue, Weisheng

    2016-04-07

    Plasmonic metamaterial absorbers (PMAs) have attracted considerable attention for developing various sensing devices. In this work, we design, fabricate and characterize PMAs of different geometrical shapes operating in mid-infrared frequencies, and explore the applications of the PMAs as sensor for thin films. The PMAs, consisting of metal-insulator-metal stacks with patterned gold nanostructured surfaces (resonators), demonstrated high absorption efficiency (87 to 98 %) of electromagnetic waves in the infrared regime. The position and efficiency of resonance absorption are dependent on the shape of the resonators. Furthermore, the resonance wavelength of PMAs was sensitive to the thin film coated on the surface of the PMAs, which was tested using aluminum oxide (Al2O3) as the film. With increase of the Al2O3 thickness, the position of resonance absorption shifted to longer wavelengths. The dependence of the resonant wavelength on thin film thickness makes PMAs a suitable candidate as a sensor for thin films. Using this sensing strategy, PMAs have potential as a new method for thin film detection and in situ monitoring of surface reactions. © 2016 Springer Science+Business Media New York

  2. Review on thin-film transistor technology, its applications, and possible new applications to biological cells

    Science.gov (United States)

    Tixier-Mita, Agnès; Ihida, Satoshi; Ségard, Bertrand-David; Cathcart, Grant A.; Takahashi, Takuya; Fujita, Hiroyuki; Toshiyoshi, Hiroshi

    2016-04-01

    This paper presents a review on state-of-the-art of thin-film transistor (TFT) technology and its wide range of applications, not only in liquid crystal displays (TFT-LCDs), but also in sensing devices. The history of the evolution of the technology is first given. Then the standard applications of TFT-LCDs, and X-ray detectors, followed by state-of-the-art applications in the field of chemical and biochemical sensing are presented. TFT technology allows the fabrication of dense arrays of independent and transparent microelectrodes on large glass substrates. The potential of these devices as electrical substrates for biological cell applications is then described. The possibility of using TFT array substrates as new tools for electrical experiments on biological cells has been investigated for the first time by our group. Dielectrophoresis experiments and impedance measurements on yeast cells are presented here. Their promising results open the door towards new applications of TFT technology.

  3. Flexible piezoelectric thin-film energy harvesters and nanosensors for biomedical applications.

    Science.gov (United States)

    Hwang, Geon-Tae; Byun, Myunghwan; Jeong, Chang Kyu; Lee, Keon Jae

    2015-04-02

    The use of inorganic-based flexible piezoelectric thin films for biomedical applications has been actively reported due to their advantages of highly piezoelectric, pliable, slim, lightweight, and biocompatible properties. The piezoelectric thin films on plastic substrates can convert ambient mechanical energy into electric signals, even responding to tiny movements on corrugated surfaces of internal organs and nanoscale biomechanical vibrations caused by acoustic waves. These inherent properties of flexible piezoelectric thin films enable to develop not only self-powered energy harvesters for eliminating batteries of bio-implantable medical devices but also sensitive nanosensors for in vivo diagnosis/therapy systems. This paper provides recent progresses of flexible piezoelectric thin-film harvesters and nanosensors for use in biomedical fields. First, developments of flexible piezoelectric energy-harvesting devices by using high-quality perovskite thin film and innovative flexible fabrication processes are addressed. Second, their biomedical applications are investigated, including self-powered cardiac pacemaker, acoustic nanosensor for biomimetic artificial hair cells, in vivo energy harvester driven by organ movements, and mechanical sensor for detecting nanoscale cellular deflections. At the end, future perspective of a self-powered flexible biomedical system is also briefly discussed with relation to the latest advancements of flexible electronics. © 2014 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  4. Thin film processes II

    CERN Document Server

    Kern, Werner

    1991-01-01

    This sequel to the 1978 classic, Thin Film Processes, gives a clear, practical exposition of important thin film deposition and etching processes that have not yet been adequately reviewed. It discusses selected processes in tutorial overviews with implementation guide lines and an introduction to the literature. Though edited to stand alone, when taken together, Thin Film Processes II and its predecessor present a thorough grounding in modern thin film techniques.Key Features* Provides an all-new sequel to the 1978 classic, Thin Film Processes* Introduces new topics, and sever

  5. Pyrolyzed thin film carbon

    Science.gov (United States)

    Tai, Yu-Chong (Inventor); Liger, Matthieu (Inventor); Harder, Theodore (Inventor); Konishi, Satoshi (Inventor); Miserendino, Scott (Inventor)

    2010-01-01

    A method of making carbon thin films comprises depositing a catalyst on a substrate, depositing a hydrocarbon in contact with the catalyst and pyrolyzing the hydrocarbon. A method of controlling a carbon thin film density comprises etching a cavity into a substrate, depositing a hydrocarbon into the cavity, and pyrolyzing the hydrocarbon while in the cavity to form a carbon thin film. Controlling a carbon thin film density is achieved by changing the volume of the cavity. Methods of making carbon containing patterned structures are also provided. Carbon thin films and carbon containing patterned structures can be used in NEMS, MEMS, liquid chromatography, and sensor devices.

  6. High index glass thin film processing for photonics and photovoltaic (PV) applications

    Science.gov (United States)

    Ogbuu, Okechukwu Anthony

    To favorably compete with fossil-fuel technology, the greatest challenge for thin film solar-cells is to improve efficiency and reduce material cost. Thickness scaling to thin film reduces material cost but affects the light absorption in the cells; therefore a concept that traps incident photons and increases its optical path length is needed to boost absorption in thin film solar cells. One approach is the integration of low symmetric gratings (LSG), using high index material, on either the front-side or backside of 30 um thin c-Si cells. In this study, Multicomponent TeO2--Bi2O 3--ZnO (TBZ) glass thin films were prepared using RF magnetron sputtering under different oxygen flow rates. The influences of oxygen flow rate on the structural and optical properties of the resulting thin films were investigated. The structural origin of the optical property variation was studied using X-ray diffraction, X-ray photoelectron spectroscopy, Raman Spectroscopy, and transmission electron microscopy. The results indicate that TBZ glass thin film is a suitable material for front side LSG material photovoltaic and photonics applications due to their amorphous nature, high refractive index (n > 2), broad band optical transparency window, low processing temperature. We developed a simple maskless method to pattern sputtered tellurite based glass thin films using unconventional agarose hydrogel mediated wet etching. Conventional wet etching process, while claiming low cost and high throughput, suffers from reproducibility and pattern fidelity issues due to the isotropic nature of wet chemical etching when applied to glasses and polymers. This method overcomes these challenges by using an agarose hydrogel stamp to mediate a conformal etching process. In our maskless method, agarose hydrogel stamps are patterned following a standard soft lithography and replica molding process from micropatterned masters and soaked in a chemical etchant. The micro-scale features on the stamp are

  7. Coherent thermal radiation in thin films and its application in the emissivity design of multilayer films

    Institute of Scientific and Technical Information of China (English)

    LIANG XinGang; HAN MaoHua

    2007-01-01

    The Infrared transmission spectra of a 0.54-μm-thick Ge film and a 20-μm-thick Si film were experimentally measured.As the incident radiation was in the wavelength range from 1.5 μm to 10 μm,the Ge film demonstrated a strongly spectral coherence.However,thermal radiation of the Ge film was found to be spatially incoherent due to its extreme thinness.The Si film exhibited significantly spectral and spatial coherence.The results confirmed that thermal radiation of a monolayer film could be coherent spectrally and spatially if the film thickness was comparable with the wavelength.The optical characteristic matrix method was applied to calculate the transmission spectra of the Si and Ge film,and the results agreed well with the measurements.This method was further used to analyze two multilayer films composed of five low emissive layers.Their emissivities were found to be highly emissive at a certain zenith angle,and the emissive peak could be controlled by careful selection of film thickness.

  8. Synthesis of aluminum nitride thin films and their potential applications in solid state thermoluminescence dosimeters

    Energy Technology Data Exchange (ETDEWEB)

    Choudhary, R.K., E-mail: rupeshkr@barc.gov.in [Materials Processing Division, Bhabha Atomic Research Centre, Mumbai 400085 (India); Soni, A. [Radiological Physics and Advisory Division, Bhabha Atomic Research Centre, Mumbai 400085 (India); Mishra, P. [Materials Processing Division, Bhabha Atomic Research Centre, Mumbai 400085 (India); Mishra, D.R.; Kulkarni, M.S. [Radiological Physics and Advisory Division, Bhabha Atomic Research Centre, Mumbai 400085 (India)

    2014-11-15

    In this work, aluminum nitride thin films were deposited on Si (1 1 1) substrate by magnetron sputtering. The obtained film was studied for thermoluminescence after irradiating it to various doses of γ-rays. Thermoluminescence measurement showed photon emission at an irradiation dose of 100 Gy or higher. Deconvolution of the experimental glow curve indicated that recombination centers in AlN were present below 2 eV trap depth. Irradiated AlN films showed less than 2% fading of TL signals on storage for 1 month in dark conditions and for the same period, light induced fading was also less than 4%. A linear variation of integrated thermoluminescence counts with absorbed dose has been observed up to an irradiation dose of 10 kGy. The deposited film was also characterized by grazing incidence X-ray diffraction, atomic force microscopy and secondary ion mass spectroscopy. Grazing incidence X-ray diffraction measurement of the obtained film has shown formation of polycrystalline wurtzite AlN having preferred orientation along (1 0 0) plane. Secondary ion mass spectroscopy analysis revealed the presence of oxygen in the film. - Highlights: • TL emission in sputter deposited AlN thin films when irradiated to gamma rays. • Linear dose–response up to 10 kGy irradiation dose. • Negligible fading of TL signals on storage. • Nominal light induced TL fading. • AlN thin films found potentially suitable for high dose dosimetry applications.

  9. Zinc oxide thin films and nanostructures for optoelectronic applications

    Science.gov (United States)

    Yun, Juhyung

    The objective of this research focuses on investigating optical, electrical, and structural properties of Al doped ZnO (AZO) and developing novel approaches to demonstrate and improve the photovoltaics and photodetectors by introducing AZO nanoscaled structures. ZnO has been widely studied for optoelectronic applications such as light emitting diodes, lasers and photodiodes covering the ultraviolet spectrum because of its wide and direct bandgap and high exciton binding energy. In this research, aluminum doped ZnO films were grown by a dual beam sputtering method which is a combination of RF sputtered ZnO and DC sputtered Al. Various approaches were applied to characterize its optical, electrical and structural modulation in terms of growth parameters and doping parameters. As an n-type dopant, Al doping was controlled from 5x016 to 5x0 20 cm-3 maintaining visible transparency with a wider transparency as Al increased, and high mobility ( 2 ˜ 14 cm2/V.s). For the optoelectric applications, a ZnO/Si heterojunction was demonstrated and studied regarding Al doping effects on the anisotype and isotype junction. An unlikely conventional photovoltaic structure suggested the ZnO/Si solar cell to be advantageous in terms of low cost fabrication process -- low temperature, no diffusion, and large area processing. In this structure, AZO plays a role as a transparent current spreading layer and rectifying junction with silicon (Si). Furthermore, by introducing metal nanostructures inside of the AZO film, light harvesting was enhanced because of plasmonic and light scattering effects ensuring minimized electrical and optical loss within the AZO. To improve photovoltaic performance, a transparent and conductive nanolens array was embedded on ITO film and employed on a conventional Si solar cell using large scale nanoimprint method. The proposed structure provides superior optical transparency beyond 700 nm of wavelength and omnidirectional broadband low reflectivity as well as

  10. Synthesis and Characterization of Potentiostatically Electrodeposited Tungsten Oxide Thin Films for Smart Window Application

    Science.gov (United States)

    More, A. J.; Patil, R. S.; Dalavi, D. S.; Suryawanshi, M. P.; Burungale, V. V.; Kim, J. H.; Patil, P. S.

    2017-02-01

    Tungsten oxide (WO3) thin films have been synthesized using electrodeposition in potentiostatic mode and the effect of different deposition potentials on their structural, morphological, optical, and electrochromic (EC) properties investigated. The deposition potential versus saturated calomel electrode (SCE) was varied from -0.35 V to -0.50 V in steps of -0.05 V for 20 min each. The electrodeposited WO3 thin films were characterized using x-ray diffraction analysis, micro-Raman spectroscopy, field-emission scanning electron microscopy, and ultraviolet-visible (UV-Vis) spectrophotometry, revealing amorphous nature with nanograins having average size from 40 nm to 60 nm. The EC performance of the WO3 thin films exhibited response times of 1.35 s for bleaching ( t b) and 3.1 s for coloration ( t c) with excellent reversibility of 64.36%. The highest coloration efficiency of the electrodeposited WO3 thin films was found to be 87.95 cm2/C. The electrochemical reversibility and stability of the WO3 thin films obtained in this study make them promising for use in smart window applications.

  11. Transparent conductive zinc oxide basics and applications in thin film solar cells

    CERN Document Server

    Klein, Andreas; Rech, Bernd

    2008-01-01

    Zinc oxide (ZnO) belongs to the class of transparent conducting oxides which can be used as transparent electrodes in electronic devices or heated windows. In this book the material properties of, the deposition technologies for, and applications of zinc oxide in thin film solar cells are described in a comprehensive manner. Structural, morphological, optical and electronic properties of ZnO are treated in this review. The editors and authors of this book are specialists in deposition, analysis and fabrication of thin-film solar cells and especially of ZnO. This book is intended as an overview and a data collection for students, engineers and scientist.

  12. Magnetic properties of electroplated nano/microgranular NiFe thin films for rf application

    NARCIS (Netherlands)

    Zhuang, Y.; Vroubel, M.; Rejaei, B.; Burghartz, J.N.; Attenborough, K.

    2005-01-01

    A granular NiFe thin film with large in-plane magnetic anisotropy and high ferromagnetic-resonance frequency developed for radio-frequency integrated circuit (IC) applications is presented. During the deposition, three-dimensional (3D) growth occurs, yielding NiFe grains (ϕ ∼ 1.0 μm). Nanonuclei (ϕ

  13. Review of thin film solar cell technology and applications for ultra-light spacecraft solar arrays

    Science.gov (United States)

    Landis, Geoffrey A.

    1991-01-01

    Developments in thin-film amorphous and polycrystalline photovoltaic cells are reviewed and discussed with a view to potential applications in space. Two important figures of merit are discussed: efficiency (i.e., what fraction of the incident solar energy is converted to electricity), and specific power (power to weight ratio).

  14. Global Dynamics of Shaft Lines Rotating in Surrounding Fluids Application to Thin Fluid Films

    Directory of Open Access Journals (Sweden)

    David Lornage

    2004-01-01

    a disc and a thin-walled shaft mounted on a hydrodynamic bearing. The second is intended for studying a more realistic structure composed of a shaft and a wheel coupled with a fluid film between the wheel and a casing. These applications make it possible to identify trends related to fluid effects and couplings between the flexible structural parts.

  15. Ferroelectric Thin Films Basic Properties and Device Physics for Memory Applications

    CERN Document Server

    Okuyama, Masanori

    2005-01-01

    Ferroelectric thin films continue to attract much attention due to their developing, diverse applications in memory devices, FeRAM, infrared sensors, piezoelectric sensors and actuators. This book, aimed at students, researchers and developers, gives detailed information about the basic properties of these materials and the associated device physics. All authors are acknowledged experts in the field.

  16. Thin films that consist of CuO mesocrystal nanosheets: an application of microbial-mineralization-inspired approaches to thin-film formation.

    Science.gov (United States)

    Ikeda, Tatsuya; Oaki, Yuya; Imai, Hiroaki

    2013-09-01

    Thin films of copper oxides can be synthesized on substrates by using approaches that are inspired by microbial mineralization processes. In nature, precipitates of manganese and iron oxides with controlled oxidation states and crystal phases are produced through biomineralization by microorganisms. We have previously reported microbial-mineralization-inspired approaches that are comprised of direct and intermediate routes for the controlled syntheses of transition-metal oxides. Herein, these approaches are applied to the thin-film formation and coating of copper oxides and a related compound with controlled crystal phases and morphologies. Thin films of CuO, Cu2O, and Cu2(OH)3Cl were selectively synthesized by using direct or intermediate routes. Notably, CuO mesocrystal nanosheets formed a thin film over the whole of the substrate. The resultant CuO mesocrystal nanosheets showed enhanced properties for the electrochemical detection of dopamine. This study shows the potential applicability of microbial-mineralization-inspired approaches to thin-film coatings.

  17. Effects of neutral particle beam on nano-crystalline silicon thin films, with application to thin film transistor backplane for flexible active matrix organic light emitting diodes

    Energy Technology Data Exchange (ETDEWEB)

    Jang, Jin Nyoung; Song, Byoung Chul; Lee, Dong Hyeok [Dept. of Display and Semiconductor Physics, Korea University, Chungnam (Korea, Republic of); Yoo, Suk Jae; Lee, Bonju [National Fusion Research Institute, 52, Yuseong-Gu, Deajeon, 305-333 (Korea, Republic of); Hong, MunPyo, E-mail: goodmoon@korea.ac.kr [Dept. of Display and Semiconductor Physics, Korea University, Chungnam (Korea, Republic of)

    2011-08-01

    A novel deposition process for nano-crystalline silicon (nc-Si) thin films was developed using neutral beam assisted chemical vapor deposition (NBaCVD) technology for the application of the thin film transistor (TFT) backplane of flexible active matrix organic light emitting diode (AMOLED). During the formation of a nc-Si thin film, the energetic particles enhance nano-sized crystalline rather microcrystalline Si in thin films. Neutral Particle Beam (NPB) affects the crystallinity in two ways: (1) NPB energy enhances nano-crystallinity through kinetic energy transfer and chemical annealing, and (2) heavier NPB (such as Ar) induces damage and amorphization through energetic particle impinging. Nc-Si thin film properties effectively can be changed by the reflector bias. As increase of NPB energy limits growing the crystalline, the performance of TFT supports this NPB behavior. The results of nc-Si TFT by NBaCVD demonstrate the technical potentials of neutral beam based processes for achieving high stability and reduced leakage in TFT backplanes for AMOLEDs.

  18. Tungsten-doped vanadium dioxide thin films on borosilicate glass for smart window application

    Energy Technology Data Exchange (ETDEWEB)

    Huang, Zhangli, E-mail: zligthuang@foxmail.com [Wuhan National Laboratory for Optoelectronics, Huazhong University of Science and Technology, Wuhan 430074 (China); School of Optical and Electronic Information, Huazhong University of Science and Technology, Wuhan 430074 (China); Chen, Changhong, E-mail: ch_chen@hust.edu.cn [Wuhan National Laboratory for Optoelectronics, Huazhong University of Science and Technology, Wuhan 430074 (China); Lv, Chaohong; Chen, Sihai [Wuhan National Laboratory for Optoelectronics, Huazhong University of Science and Technology, Wuhan 430074 (China)

    2013-07-05

    Highlights: ► Tungsten-doped VO{sub 2} (W–VO{sub 2}) films with different annealing conditions were fabricated. ► W-VO{sub 2} films were found to exhibit a semiconductor-metal transition at 34 °C. ► The W atoms have been successfully doped into VO{sub 2} film and exist as W{sup 6+} in the films. ► W-VO{sub 2} films possess excellent infrared switching efficiency, i.e. 33%. -- Abstract: Tungsten-doped VO{sub 2} (W–VO{sub 2}) thin films with low metal–semiconductor transition temperature (T{sub t}) of 34 °C were grown on borosilicate glass substrates by reactive ion beam sputtering at room-temperature (RT) followed by a post annealing process. In order to investigate the thermal process effect, four samples S1–S4 were annealed at different temperatures of 490, 530, 570 and 610 °C, respectively. X-ray photoelectron spectroscope and Raman measurements demonstrate that the tungsten atoms have been successfully doped into VO{sub 2} films. Unlike VO{sub 2} thin films which should be annealed at critical temperature, well crystallized W–VO{sub 2} films can be annealed in a wide temperature range, i.e. 530–570 °C, as revealed by both electrical and optical property investigations. Besides, the infrared (IR) transmittance measured below/above T{sub t} illustrates that W–VO{sub 2} films possess excellent switching efficiency, i.e. 33% at 2500 nm for S3. Above all, the near RT phase transition, RT deposition, easy control of annealing process and high IR switching efficiency make the W–VO{sub 2} thin film a promising material for application of smart windows.

  19. Recent Progress Towards Space Applications Of Thin Film Solar Cells- The German Joint Project 'Flexible CIGSE Thin Film Solar Cells For Space Flight' And OOV

    Science.gov (United States)

    Brunner, Sebastian; Zajac, Kai; Nadler, Michael; Seifart, Klaus; Kaufmann, Christian A.; Caballero, Raquel; Schock, Hans-Werner; Hartmann, Lars; Otte, Karten; Rahm, Andreas; Scheit, Christian; Zachmann, Hendrick; Kessler, Friedrich; Wurz, Roland; Schulke, Peter

    2011-10-01

    A group of partners from an academic and industrial background are developing a flexible Cu(In,Ga)Se2 (CIGSe) thin film solar cell technology on a polyimide substrate that aims to be a future alternative to current rigid solar cell technologies for space applications. In particular on missions with high radiation volumes, the superior tolerance of chalcopyrite based thin film solar cell (TFSC) technologies with respect to electron and proton radiation, when compared to the established Si- or III-V based technologies, can be advantageous. Of all thin film technologies, those based on CIGSe have the highest potential to reach attractive photovoltaic conversion efficiencies and combine these with low weight in order to realize high power densities on solar cell and generator level. The use of a flexible substrate ensures a high packing density. A working demonstrator is scheduled for flight this year.

  20. Mission Applicability and Benefits of Thin-Film Integrated Power Generation and Energy Storage

    Science.gov (United States)

    Hoffman, David; Raffaelle, Ryne P.; Landis, Geoffrey A.; Hepp, Aloysius F.

    2001-01-01

    This paper discusses the space mission applicability and benefits of a thin-film integrated power generation and energy storage device, i.e., an "Integrated Power Source" or IPS. The characteristics of an IPS that combines thin-film photo-voltaic power generation with thin-film energy storage are described. Mission concepts for a thin-film IPS as a spacecraft main electrical power system, as a decentralized or distributed power source and as an uninterruptible power supply are discussed. For two specific missions, preliminary sizing of an IPS as a main power system is performed and benefits are assessed. IPS developmental challenges that need to be overcome in order to realize the benefits of an IPS are examined. Based on this preliminary assessment, it is concluded that the most likely and beneficial application of an IPS will be as the main power system on a very small "nanosatellite," or in specialized applications serving as a decentralized or distributed power source or uninterruptible power supply.

  1. Novel aspect in grain size control of nanocrystalline diamond film for thin film waveguide mode resonance sensor application.

    Science.gov (United States)

    Lee, Hak-Joo; Lee, Kyeong-Seok; Cho, Jung-Min; Lee, Taek-Sung; Kim, Inho; Jeong, Doo Seok; Lee, Wook-Seong

    2013-11-27

    Nanocrystalline diamond (NCD) thin film growth was systematically investigated for application for the thin film waveguide mode resonance sensor. The NCD thin film was grown on the Si wafer or on the SiO2-coated sapphire substrate using the hot filament chemical vapor deposition (HFCVD). The structural/optical properties of the samples were characterized by the high-resolution scanning electron microscopy (HRSEM), high-resolution transmission electron microscopy (HRTEM), energy dispersive X-ray spectroscopy (EDS), near edge X-ray absorption fine structure (NEXAFS), X-ray diffraction (XRD), and ultraviolet-visible (UV-vis) spectroscopy. The waveguide modes of the NCD layer were studied by prism coupler technique using laser (wavelength: 632.8 nm) with varying incident angle. A novel aspect was disclosed in the grain size dependence on the growth temperature at the relatively low methane concentration in the precursor gas, which was important for optical property: the grain size increased with decreasing growth temperature, which was contrary to the conventional knowledge prevailing in the microcrystalline diamond (MCD) domain. We have provided discussions to reconcile such observation. An optical waveguide mode resonance was demonstrated in the visible region using the microstructure-controlled transparent NCD thin film waveguide, which provided a strong potential for the waveguide mode resonance sensor applications.

  2. Application of well characterized e - beam evaporated WSe2 thin films in Schottky Barrier diodes

    Science.gov (United States)

    Patel, Mayurkumar M.

    The studies of semiconductor thin films and their junctions such as metal semiconductor junctions (Schottky Barriers) have received much attention due to their applications in various electronic and optoelectronic devices including high frequency switching device, Schottky barrier devices, solar cells etc. But, realization of any electronic device using a combination of bulk and thin film or all bulk or all thin film components essentially requires metallization of metal contacts for electrical signals to flow into and out of the device. Thus junction between two metals and metal-semiconductor is an integral part of the device without which communication to the external circuit components would not be possible. In this reference stable metalsemiconductor contacts of ohmic as well as rectifying nature are very much important from technological point of view. In both cases preparation of reliable and efficient metal contacts with high yield and stability is challenging task for devices operating at high frequencies when packing density is increased by many fold. Thus, the behavior of metal-semiconductor contacts at microscopic scale may be explored for the development of future technology. The subject matter of such contacts is well documented in many books with review of developments in the recent past. Earlier devices were prepared on the bulk elemental semiconductors as an active region which was then followed by crystalline/amorphous compound semiconductors in bulk as well as thin film forms like Solar cells, p-n junction diodes, Schottky barrier devices etc. in recent past. Normally bulk crystalline'or amorphous substrate is used to support device structure made from crystalline/amorphous bulk and thin film. However, to the best of author's knowledge no attempts have been made to study the devices prepared by depositing semiconductor thin film with thin metal film supported by a by a non-conducting glass substrate. For this purpose, studies were carried out on

  3. Study on Preparation of High-k Organic-Inorganic Thin Film for Organic-Inorganic Thin Film Transistor Gate Dielectric Application

    Science.gov (United States)

    Lee, Wen-Hsi; Liu, Chao-Te; Lee, Ying-Chieh

    2012-06-01

    A simple solution-based deposition technique combined with spin-coating is a plausible way to prepare ultra-thin organic-inorganic nanocomposite films. In this study, we describe the spin-coating deposition of a colloidal nanoparticle suspension to obtain an ultra-thin organic-inorganic composite film as a gate insulator for organic thin film transistor (O-TFT) application. To obtain a homogenous organic-inorganic composite film, well-dispersed TiO2 nanoparticles in γ-butyrolactone and polyimide are important; therefore, several dispersants were assessed on the basis of the measurement of the rheological behavior of slurries. The thickness of the organic-inorganic composite film is mainly determined by the speed of spin-coating and viscosity of slurries. An approximately 4000-Å-thick nanocomposite film with homogeneous distribution of TiO2 nanoparticles in polyimide and low roughness was obtained after curing at 200 °C, resulting in a low leakage current density of the nano-composite film, when less than 2 vol % TiO2 nanoparticles were well dispersed in polyimide slurry. The dielectric constant of the organic-inorganic nanocomposite increases with increasing TiO2 content in polyimide, being situated in the range between 4 and 5.

  4. Synthesis of Tantalum-Doped Tin Oxide Thin Films by Magnetron Sputtering for Photovoltaic Applications

    Science.gov (United States)

    Nguyen, Ngoc Minh; Luu, Manh Quynh; Nguyen, Minh Hieu; Nguyen, Duy Thien; Bui, Van Diep; Truong, Thanh Tu; Pham, Van Thanh; Nguyen-Tran, Thuat

    2017-06-01

    Tantalum-doped tin oxide transparent conductive thin films were deposited on glass substrates by radio frequency and direct current reactive magnetron co-sputtering methods in an argon and oxygen environment. Optimization of the thin films for photovoltaic applications was performed using a dimensionless figure of merit by combining electrical and transparency properties. The optimized thin film showed a weight-averaged transmittance of 83%, a band gap value of 3.2 eV, resistivity of 5.2 × 10-3 Ω cm, and bulk carrier concentration of 1.2 × 1020 cm-3. The lowest resistivity among all films was 2.1 × 10-3 Ω cm, corresponding to a weight-averaged transmittance of 62%. The optimized deposition condition was carried out by co-sputtering on heated substrates at 270°C. Thin films deposited under this optimized condition were applied for our perovskite solar cells, and demonstrated promising power conversion efficiency.

  5. Synthesis of Tantalum-Doped Tin Oxide Thin Films by Magnetron Sputtering for Photovoltaic Applications

    Science.gov (United States)

    Nguyen, Ngoc Minh; Luu, Manh Quynh; Nguyen, Minh Hieu; Nguyen, Duy Thien; Bui, Van Diep; Truong, Thanh Tu; Pham, Van Thanh; Nguyen-Tran, Thuat

    2017-01-01

    Tantalum-doped tin oxide transparent conductive thin films were deposited on glass substrates by radio frequency and direct current reactive magnetron co-sputtering methods in an argon and oxygen environment. Optimization of the thin films for photovoltaic applications was performed using a dimensionless figure of merit by combining electrical and transparency properties. The optimized thin film showed a weight-averaged transmittance of 83%, a band gap value of 3.2 eV, resistivity of 5.2 × 10-3 Ω cm, and bulk carrier concentration of 1.2 × 1020 cm-3. The lowest resistivity among all films was 2.1 × 10-3 Ω cm, corresponding to a weight-averaged transmittance of 62%. The optimized deposition condition was carried out by co-sputtering on heated substrates at 270°C. Thin films deposited under this optimized condition were applied for our perovskite solar cells, and demonstrated promising power conversion efficiency.

  6. Chiral atomically thin films

    Science.gov (United States)

    Kim, Cheol-Joo; Sánchez-Castillo, A.; Ziegler, Zack; Ogawa, Yui; Noguez, Cecilia; Park, Jiwoong

    2016-06-01

    Chiral materials possess left- and right-handed counterparts linked by mirror symmetry. These materials are useful for advanced applications in polarization optics, stereochemistry and spintronics. In particular, the realization of spatially uniform chiral films with atomic-scale control of their handedness could provide a powerful means for developing nanodevices with novel chiral properties. However, previous approaches based on natural or grown films, or arrays of fabricated building blocks, could not offer a direct means to program intrinsic chiral properties of the film on the atomic scale. Here, we report a chiral stacking approach, where two-dimensional materials are positioned layer-by-layer with precise control of the interlayer rotation (θ) and polarity, resulting in tunable chiral properties of the final stack. Using this method, we produce left- and right-handed bilayer graphene, that is, a two-atom-thick chiral film. The film displays one of the highest intrinsic ellipticity values (6.5 deg μm-1) ever reported, and a remarkably strong circular dichroism (CD) with the peak energy and sign tuned by θ and polarity. We show that these chiral properties originate from the large in-plane magnetic moment associated with the interlayer optical transition. Furthermore, we show that we can program the chiral properties of atomically thin films layer-by-layer by producing three-layer graphene films with structurally controlled CD spectra.

  7. Superhydrophilic graphene-loaded TiO2 thin film for self-cleaning applications.

    Science.gov (United States)

    Anandan, Srinivasan; Rao, Tata Narasinga; Sathish, Marappan; Rangappa, Dinesh; Honma, Itaru; Miyauchi, Masahiro

    2013-01-01

    We develop a simple approach to fabricate graphene-loaded TiO(2) thin films on glass substrates by the spin-coating technique. Our graphene-loaded TiO(2) films were highly conductive and transparent and showed enhanced photocatalytic activities. More significantly, graphene/TiO(2) films displayed superhydrophilicity within a short time even under a white fluorescent light bulb, as compared to a pure TiO(2) film. The enhanced photocatalytic activity of graphene/TiO(2) films is attributed to its efficient charge separation, owing to electrons injection from the conduction band of TiO(2) to graphene. The electroconductivity of the graphene-loaded TiO(2) thin film also contributes to the self-cleaning function by its antifouling effect against particulate contaminants. The present study reveals the ability of graphene as a low cost cocatalyst instead of expensive noble metals (Pt, Pd), and further shows its capability for the application of self-cleaning coatings with transparency. The promising characteristics of (inexpensive, transparent, conductive, superhydrophilic, and highly photocatalytically active) graphene-loaded TiO(2) films may have the potential use in various indoor applications.

  8. Sputter deposition and characterization of lithium cobalt oxide thin films and their applications in thin-film rechargeable lithium batteries

    Energy Technology Data Exchange (ETDEWEB)

    Wang, B.; Bates, J.B.; Luck, C.F.; Sales, B.C.; Zuhr, R.A. [Oak Ridge National Lab., TN (United States); Robertson, J.D. [Kentucky Univ., Lexington, KY (United States). Dept. of Chemistry

    1996-01-01

    Li Co oxide thin films were deposited by rf magnetron sputtering of a LiCoO{sub 2} target in a 3:1 Ar/O{sub 2} mixture gas. From proton-induced gamma-ray emission analysis and Rutherford backscattering spectrometry, the average composition of these films was determined to be Li{sub 1.15}CoO{sub 2.16}. X-ray powder diffraction patterns of films annealed in air at 500-700 C were consistent with regular rhombohedral structure of crystalline LiCoO{sub 2}. Discharge curves of thin film lithium cells with amoprohous LiCoO{sub 2} showed no obvious structural transition between 4.2 and 1.5 V. Shape of discharge curves of cells with polycrystalline cathodes were consistent with a two-phase voltage plateau at {similar_to}3.9 V with a relatively large capacity and two additional smaller plateaus at higher voltages. Cells with the 700 C annealed cathodes showed a capacity loss of {similar_to} after 1000 cycles between 4.2 and 3.0 V.

  9. Application of Thin-Film Thermocouples to Localized Heat Transfer Measurements

    Science.gov (United States)

    Lepicovsky, J.; Bruckner, R. J.; Smith, F. A.

    1995-01-01

    The paper describes a proof-of-concept experiment on thin-film thermocouples used for localized heat transfer measurements applicable to experiments on hot parts of turbine engines. The paper has three main parts. The first part describes the thin-film sensors and manufacturing procedures. Attention is paid to connections between thin-film thermocouples and lead wires, which has been a source of problems in the past. The second part addresses the test arrangement and facility used for the heat transfer measurements modeling the conditions for upcoming warm turbine tests at NASA LeRC. The paper stresses the advantages of a modular approach to the test rig design. Finally, we present the results of bulk and local heat flow rate measurements, as well as overall heat transfer coefficients obtained from measurements in a narrow passage with an aspect ratio of 11.8. The comparison of bulk and local heat flow rates confirms applicability of thin-film thermocouples to upcoming warm turbine tests.

  10. Dispersion-model-free determination of optical constants: application to materials for organic thin film devices.

    Science.gov (United States)

    Flämmich, Michael; Danz, Norbert; Michaelis, Dirk; Bräuer, Andreas; Gather, Malte C; Kremer, Jonas H-W M; Meerholz, Klaus

    2009-03-10

    We describe a method to determine the refractive index and extinction coefficient of thin film materials without prior knowledge of the film thickness and without the assumption of a dispersion model. A straightforward back calculation to the optical parameters can be performed starting from simple measurements of reflection and transmission spectra of a 100-250 nm thick supported film. The exact film thickness is found simultaneously by fulfilling the intrinsic demand of continuity of the refractive index as a function of wavelength. If both the layer and the substrate are homogeneous and isotropic media with plane and parallel interfaces, effects like surface roughness, scattering, or thickness inhomogeneities can be neglected. Then, the accuracy of the measurement is approximately 10(-2) and 10(-3) for the refractive index and the extinction coefficient, respectively. The error of the thin film thickness determination is well below 1 nm. Thus this technique is well suited to determine the input parameters for optical simulations of organic thin film devices, such as organic light-emitting diodes (OLEDs) or organic photovoltaic (OPV) cells. We apply the method to the electroluminescent polymer poly(2,5-dioctyl-p-phenylene vinylene) (PDO-PPV) and show its applicability by comparing the measured and calculated reflection and transmission spectra of OLED stacks with up to five layers.

  11. Deposition of Low Stress Silicon Nitride Thin Film and Its Application in Surface Micromachining Device Structures

    Directory of Open Access Journals (Sweden)

    Beirong Zheng

    2013-01-01

    Full Text Available Surface machining processes are responsible for creating microstructures that reside near the surfaces of a substrate and are characterized by the fabrication of micromechanical structures from deposited thin films. These films can be selectively removed to build three-dimensional structures whose functionality typically requires that they should be freed from the planar substrate. Silicon nitride thin film is one of these important materials. In this paper, by adjusting the SiH2Cl2/NH3 gaseous ratio, low stress silicon nitride (LS SiN is deposited by the low pressure chemical vapor deposition (LPCVD process. The internal stress generally in 135 MPa has been detected using an FLX-2320 film stress tester. Based on the wide application in surface micromachining devices, the mechanical properties of LS SiN are measured by nanoindentation, giving the value of Young’s modulus of 224 GPa and the hardness of 22.5 GPa, respectively. Dry etching and wet etching are utilized to fabricate the LS SiN thin film for structural layers. The etching rate compared with normal Si3N4 film by LPCVD is demonstrated for silicon chip manufacture.

  12. Ultra-Thin Films for Opto-Electronic Applications

    Science.gov (United States)

    2007-11-02

    oxidative addition step [TM ] = trans-metallation step - (or disproportionation step) •Zi._-_ [RE ] = reductive elimination step Ph "f >, Br Pn Fý...on the other hand, results in films with conductivities that are considerably lower. The iodine doped films were rapidly dedoped in air. It suggest...that poly(thiophene) has large ionization potential and that the dopant has not fully penetrated the multilayer structure or that iodine only forms a

  13. Low temperature deposition of silver sulfide thin films by AACVD for gas sensor application

    Energy Technology Data Exchange (ETDEWEB)

    Hussain, Syed Tajammul, E-mail: dr_tajammul@yahoo.ca [National Centre for Physics, Quaid-i-azam University, Islamabad (Pakistan); Bakar, Shahzad Abu [National Centre for Physics, Quaid-i-azam University, Islamabad (Pakistan); Department of Chemistry, Quaid-e-azam University, Islamabad (Pakistan); Saima, BiBi; Muhammad, Bakhtiar [Department of Chemistry, Hazara University, Mansehra (Pakistan)

    2012-10-01

    Highlights: Black-Right-Pointing-Pointer Silver sulfide thin films were deposited by aerosol assisted chemical vapor deposition from a single source precursor [Ag(S{sub 2}CN (C{sub 2}H{sub 5}){sub 2}){sub 3}]{sub 2} (1). Black-Right-Pointing-Pointer The precursor (1), prepared in high yield by simple reported chemical procedure, was characterized and undergoes facile decomposition at 400 Degree-Sign C. Black-Right-Pointing-Pointer The deposited thin films were characterized by SEM, EDX and XRD which suggests the formation of impurity-free mesoporous Ag{sub 2}S, with well defined particles evenly distributed in the range of 0.3-0.5 {mu}m. Black-Right-Pointing-Pointer The optical bandgap energy of the thin film was estimated, and it is about 1.33 eV. Black-Right-Pointing-Pointer The thin films were investigated for the gas sensor applications. - Abstract: Crack free Ag{sub 2}S thin films were deposited on glass substrates by aerosol assisted chemical vapor deposition (AACVD) using [Ag(S{sub 2}CN (C{sub 2}H{sub 5}){sub 2}){sub 3}]{sub 2} (1) as a precursor. Thin films were deposited from solution of methanol at 400 Degree-Sign C and characterized by X-ray diffraction (XRD), UV-vis spectroscopy, scanning electron microscopy (SEM), and energy dispersive X-ray (EDX) analysis. SEM image of thin film showed well-defined and porous surface morphology with an average particle size of 0.3-0.5 {mu}m. Optical band gaps energy of 1.33 eV was estimated for Ag{sub 2}S thin film, by extrapolating the linear part of the Tauc plot recorded at room temperature. The gas sensing characteristics of the novel gas sensors based on Ag{sub 2}S were investigated for the detection carbon monoxide. The effect of operating temperature and change in gas concentration on the performance of carbon monoxide were investigated. The sensing mechanism of sensor was discussed.

  14. Spinodal dewetting of thin films

    Science.gov (United States)

    Jaiswal, Prabhat K.; Puri, S.

    2009-01-01

    Stable thin liquid films are of various scientific and technological applications, e.g., in optical coating, painting technologies, coating thin wires and fibers, lubricants, adhesives, etc. However, the instabilities in a thin film may lead to rupture, hole formation, and other morphological changes which amplify the nonuniformity in the thin film [1]. This morphological evolution in an unstable thin film is generally known as `dewetting' [2]. There have recently been a number of theoretical and experimental studies on dewetting in thin films [3-6]. The process of `spinodal dewetting' comes into the category of a general class of phenomena, spinodal decomposition [7]. The pattern formation taking place during dewetting can also be of great importance in nanotechnology, e.g., for preparing quantum dots [8], nanorings [9], etc. We numerically solve the nonlinear two-dimensional thin film equation [2] for a thin liquid film subjected to the long range van der Waals attraction and short range Born repulsion. The simulation results for the temporal evolution of domains and height profile along diagonal direction of the lattice show the `hills and valleys' short of structures which is the typical morphology obtained during the spinodal dewetting [10]. We obtain the dynamical correlation function and structure factor showing the existence of a characteristic length scale in the system at late time. We give the scaling arguments for the length scale of the drops to be proportional to t1/3 which is in agreement with our numerical results for the domain growth.

  15. Thin films of metal-organic compounds and metal nanoparticle-embedded polymers for nonlinear optical applications

    Indian Academy of Sciences (India)

    S Philip Anthony; Shatabdi Porel; D Narayana Rao; T P Radhakrishnan

    2005-11-01

    Thin films based on two very different metal-organic systems are developed and some nonlinear optical applications are explored. A family of zinc complexes which form perfectly polar assemblies in their crystalline state are found to organize as uniaxially oriented crystallites in vapor deposited thin films on glass substrate. Optical second harmonic generation from these films is investigated. A simple protocol is developed for the in-situ fabrication of highly monodisperse silver nanoparticles in a polymer film matrix. The methodology can be used to produce free-standing films. Optical limiting capability of the nanoparticle-embedded polymer film is demonstrated.

  16. Research on the optimum hydrogenated silicon thin films for application in solar cells

    Institute of Scientific and Technical Information of China (English)

    Lei Qing-Song; Wu Zhi-Meng; Geng Xin-Hua; Zhao Ying; Sun Jian; Xi Jian-Ping

    2006-01-01

    Hydrogenated silicon (Si:H) thin films for application in solar cells were deposited by using very high frequency plasma enhanced chemical vapour deposition (VHF PECVD) at a substrate temperature of about 170 ℃. The electrical,structural, and optical properties of the films were investigated. The deposited films were then applied as i-layers for p-i-n single junction solar cells. The current-voltage (Ⅰ - Ⅴ) characteristics of the cells were measured before and after the light soaking. The results suggest that the films deposited near the transition region have an optimum properties for application in solar cells. The cell with an i-layer prepared near the transition region shows the best stable performance.

  17. Study of two different thin film coating methods in transmission laser micro-joining of thin Ti-film coated glass and polyimide for biomedical applications.

    Science.gov (United States)

    Sultana, T; Georgiev, G L; Baird, R J; Auner, G W; Newaz, G; Patwa, R; Herfurth, H J

    2009-07-01

    Biomedical devices and implants require precision joining for hermetic sealing which can be achieved with low power lasers. The effect of two different thin metal film coating methods was studied in transmission laser micro-joints of titanium-coated glass and polyimide. The coating methods were cathodic arc physical vapor deposition (CA-PVD) and electron beam evaporation (EB-PVD). Titanium-coated glass joined to polyimide film can have neural electrode application. The improvement of the joint quality will be essential for robust performance of the device. Low power fiber laser (wave length = 1100 nm) was used for transmission laser micro-joining of thin titanium (Ti) film (approximately 200 nm) coated Pyrex borosilicate 7740 glass wafer (0.5 mm thick) and polyimide (Imidex) film (0.2 mm thick). Ti film acts as the coupling agent in the joining process. The Ti film deposition rate in the CA-PVD was 5-10 A/s and in the EB-PVD 1.5 A/s. The laser joint strength was measured by a lap shear test, the Ti film surfaces were analyzed by atomic force microscopy (AFM) and the lap shear tested joints were analyzed by optical microscopy and scanning electron microscopy (SEM). The film properties and the failure modes of the joints were correlated to joint strength. The CA-PVD produced around 4 times stronger laser joints than EB-PVD. The adhesion of the Ti film on glass by CA-PVD is better than that of the EB-PVD method. This is likely to be due to a higher film deposition rate and consequently higher adhesion or sticking coefficient for the CA-PVD particles arriving on the substrate compared to that of the EB-PVD film. EB-PVD shows poor laser bonding properties due to the development of thermal hotspots which occurs from film decohesion.

  18. Dielectric relaxation of barium strontium titanate and application to thin films for DRAM capacitors

    Science.gov (United States)

    Baniecki, John David

    expression, and BSTO thin film electrical characteristics, the charge loss due to dielectric relaxation is estimated to be 6--12% of the initial charge stored on the capacitor plates for MOCVD BSTO thin films with Pt electrodes after a post top electrode anneal in oxygen. In contrast, it is shown that the charge loss due to steady state leakage is only 0.0125--0.125% of the initial charge stored on the capacitor plates. Charge retention is shown to depend strongly on the annealing conditions. Annealing MOCVD BSTO thin films with Pt electrodes in forming gas (95% Ar 5% H2) increases charge loss due to dielectric relaxation to as much as 60%. Ion implantation is used to dope BSTO thin films with Mn. X-ray diffraction and transmission electron microscopy (TEM) shows ion implantation significantly damages the film leaving only short-range order, but post-implant annealing heals the damage. Capacitance recovery after post-implant annealing is as high as 94% for 15 nm BSTO films. At low implant doses, the Mn doped films have substantially lower leakage (up to a factor of ten lower) and only slightly higher relaxation currents and dielectric loss indicating that ion implantation may be a potentially viable way of introducing dopants into high dielectric constant thin films for future DRAM applications.

  19. Characterization of chemical bath deposited buffer layers for thin film solar cell applications

    Energy Technology Data Exchange (ETDEWEB)

    Dwyer, D.; Efstathiadis, H.; Haldar, P. [College of Nanoscale Science and Engineering, University at Albany - State University of New York, 257 Fuller Rd., Albany, NY 12203 (United States); Sun, R. [Angstrom Sun Technologies Inc., 33 Nagog Park, Acton, MA 01720 (United States)

    2010-10-15

    Cadmium sulfide (CdS), indium sulfide (In{sub 2}S{sub 3}) and zinc sulfide (ZnS) thin films have been deposited by chemical bath deposition (CBD) for buffer layer applications in Cu-chalcopyrite-based thin film solar cells. Films were characterized by scanning electron microscopy (SEM), UV-Vis transmission, X-ray photoelectron spectroscopy (XPS), grazing-incidence X-ray diffraction (GIXRD), and spectroscopic ellipsometry. Results indicate CdS can be deposited with low oxygen content and high light transmission over 245-1700 nm. CBD-ZnS and CBD-InS both exhibit 5-10% less light transmission than CdS in the same thickness range. In terms of light transmission and degree of impurities CdS appears to be a better buffer material than CBD-ZnS or CBD-InS. (Abstract Copyright [2010], Wiley Periodicals, Inc.)

  20. Ceramic Composite Thin Films

    Science.gov (United States)

    Ruoff, Rodney S. (Inventor); Stankovich, Sasha (Inventor); Dikin, Dmitriy A. (Inventor); Nguyen, SonBinh T. (Inventor)

    2013-01-01

    A ceramic composite thin film or layer includes individual graphene oxide and/or electrically conductive graphene sheets dispersed in a ceramic (e.g. silica) matrix. The thin film or layer can be electrically conductive film or layer depending the amount of graphene sheets present. The composite films or layers are transparent, chemically inert and compatible with both glass and hydrophilic SiOx/silicon substrates. The composite film or layer can be produced by making a suspension of graphene oxide sheet fragments, introducing a silica-precursor or silica to the suspension to form a sol, depositing the sol on a substrate as thin film or layer, at least partially reducing the graphene oxide sheets to conductive graphene sheets, and thermally consolidating the thin film or layer to form a silica matrix in which the graphene oxide and/or graphene sheets are dispersed.

  1. Microfabrication and Performance of Annealed NiTi Shape Memory Thin Films by Sputtering for Microdevice Applications

    Institute of Scientific and Technical Information of China (English)

    GONG Feng-fei.

    2004-01-01

    The microfabrication and performance NiTi shape memory thin films for microdevice applications were studied by microfabrication processes, which were compatible with those of microelectronics fabrication processes. The sputter-deposition conditions, patterning process, and annealing conditions were investigated. The B2 crystal structures of the thin films can be obtained by annealing at 525℃ for 30min. The results from x-ray photoemission spectroscopy indicated that the atomic concentration in the surface of the annealed thin films with preferred structures is comparable with those of the as-deposited films.

  2. Solution processed silver sulfide thin films for filament memory applications

    Science.gov (United States)

    Yin, Shong

    Filament Memories based on resistive switching have been attracting attention in recent years as a potential replacement for flash memory in CMOS technology and as a potential candidate memory for low-cost, large-area electronics. These memories operate at low voltages with fast switching speeds. These devices are based on ionic conduction through an electrolyte layer and differ fundamentally in operation from conventional flash memory, which is based on the field effect transistor. To facilitate development of this technology, effects of film structure on ionic and electronic conducting properties and the filament formation processes must be studied. In this work, silver sulfide, a mixed ionic-electronic conductor, is used as a model material for studying the solution processing of filament memories, and to study the impact of film structure on conducting and switching properties. Three different solution processing methods are investigated for depositing silver sulfide: sulfidation of elemental silver films, and sintering of two types of silver sulfide nanoparticles. Effects of nanoparticle sintering conditions on electrolyte structured and mixed conducting properties are investigated by a combination of X-ray diffraction, electrical impedance spectroscopy and thermo-gravimetric analysis. Impact of forming voltage and time on filament morphology is examined to provide an overall view of the impact of electrical and material parameters on device operation.

  3. Industrialization of Hot Wire Chemical Vapor Deposition for thin film applications

    Energy Technology Data Exchange (ETDEWEB)

    Schropp, R.E.I., E-mail: r.e.i.schropp@tue.nl

    2015-11-30

    The consequences of implementing a Hot Wire Chemical Vapor Deposition (HWCVD) chamber into an existing in-line or roll-to-roll reactor are described. The hardware and operation of the HWCVD production reactor is compared to that of existing roll-to-roll reactors based on Plasma Enhanced Chemical Vapor Deposition. The most important consequences are the technical consequences and the economic consequences, which are both discussed. The technical consequences are adaptations needed to the hardware and to the processing sequences due to the different interaction of the HWCVD process with the substrate and already deposited layers. The economic consequences are the reduced investments in radio frequency (RF) supplies and RF components. This is partially offset by investments that have to be made in higher capacity pumping systems. The most mature applications of HWCVD are moisture barrier coatings for thin film flexible devices such as Organic Light Emitting Diodes and Organic Photovoltaics, and passivation layers for multicrystalline Si solar cells, high mobility field effect transistors, and silicon heterojunction cells (also known as heterojunction cells with intrinsic thin film layers). Another example is the use of Si in thin film photovoltaics. The cost perspective per unit of thin film photovoltaic product using HWCVD is estimated at 0.07 €/Wp for the Si thin film component. - Highlights: • Review of consequences of implementing Hot Wire CVD into a manufacturing plant • Aspects of scaling up to large area and continuous manufacturing are discussed • Economic advantage of introducing a HWCVD process in a production system is estimated • Using HWCVD, the cost for the Si layers in photovoltaic products is 0.08 €/Wp.

  4. Quaternary Cu2ZnSnSe4 thin films for solar cells applications

    OpenAIRE

    Zoppi, Guillaume; Forbes, Ian; Miles, Robert; Dale, Phillip; Scragg, Jonathan; Peter, Laurence

    2009-01-01

    Polycrystalline thin films of Cu2ZnSnSe4 (CZTSe) were produced by selenisation of Cu(Zn,Sn) magnetron sputtered metallic precursors for solar cell applications. The p-type CZTSe absorber films were found to crystallize in the stannite structure (a = 5.684 Ã… and c = 11.353 Ã…) with an electronic bandgap of 0.9 eV. Solar cells with the structure were fabricated with device efficiencies up to 3.2%.

  5. Low temperature NbSi thin film thermometers on Silicon Nitride membranes for bolometer applications

    Energy Technology Data Exchange (ETDEWEB)

    Camus, Ph. E-mail: camus@csnsm.in2p3.fr; Berge, L.; Dumoulin, L.; Marnieros, S.; Torre, J.P

    2000-04-07

    We report the design of amorphous NbSi thin film bolometer thermometers on Silicon Nitride membranes. Due to the low-thermal conductivity of Si{sub 3}N{sub 4}, this material has several applications in millimeter wavelength bolometers and microcalorimetry. Compared to NTD-Ge thermometers, similar sensitivities are obtained with a 50 times lesser volume. The smallest realized films have a rectangular surface (100x400 {mu}m{sup 2}) and are 100 nm thick. Optimization of the thermometer shape, NbSi composition and electrical material contact is discussed. The goal of this development is to manufacture a complete array of bolometers by photolithography techniques.

  6. Nonlinear optical thin films

    Science.gov (United States)

    Leslie, Thomas M.

    1993-01-01

    A focused approach to development and evaluation of organic polymer films for use in optoelectronics is presented. The issues and challenges that are addressed include: (1) material synthesis, purification, and the tailoring of the material properties; (2) deposition of uniform thin films by a variety of methods; (3) characterization of material physical properties (thermal, electrical, optical, and electro-optical); and (4) device fabrication and testing. Photonic materials, devices, and systems were identified as critical technology areas by the Department of Commerce and the Department of Defense. This approach offers strong integration of basic material issues through engineering applications by the development of materials that can be exploited as the active unit in a variety of polymeric thin film devices. Improved materials were developed with unprecedented purity and stability. The absorptive properties can be tailored and controlled to provide significant improvement in propagation losses and nonlinear performance. Furthermore, the materials were incorporated into polymers that are highly compatible with fabrication and patterning processes for integrated optical devices and circuits. By simultaneously addressing the issues of materials development and characterization, keeping device design and fabrication in mind, many obstacles were overcome for implementation of these polymeric materials and devices into systems. We intend to considerably improve the upper use temperature, poling stability, and compatibility with silicon based devices. The principal device application that was targeted is a linear electro-optic modulation etalon. Organic polymers need to be properly designed and coupled with existing integrated circuit technology to create new photonic devices for optical communication, image processing, other laser applications such as harmonic generation, and eventually optical computing. The progression from microscopic sample to a suitable film

  7. Controlling the morphology of thin titania films for applications in hybrid solar cells

    Energy Technology Data Exchange (ETDEWEB)

    Rawolle, Monika; Ruderer, Matthias A.; Prams, Stefan; Zhong, Qi; Mueller-Buschbaum, Peter [TU Muenchen, Physik-Department LS E13, Garching (Germany); Memesa, Mine; Gutmann, Jochen S. [Max-Planck Institute for Polymer Research, Mainz (Germany)

    2010-07-01

    Nanostructured thin films of titania have a variety of applications. For applications in photovoltaics a high absorption coefficient and a large surface area are desirable. A sponge structure is a promising morphology for titania to meet these demands. Block copolymers can be used in a good-poor solvent pair induced phase separation process coupled with sol-gel chemistry to create structured titania films in a reproducible way. We use the amphiphilic diblock copolymer Poly(dimethyl siloxane)-block-methyl methacrylate poly(ethylene oxide)[PDMS-b-MA(PEO)] as templating agent. Different well defined mixing procedures of sol-gel components (Tetrahydrofuran, 2-Propanol, HCl and titania precursor in addition to the PDMS-b-MA(PEO)) of same weight fractions result in small changes in the morphology of the film. The thin films are prepared via spin-coating on silicon substrates. The surface structure is studied with SEM. Information on the morphology in the volume of the film is gained from GISAXS. The layer thickness and structure are studied with XRR, the optical properties with UV/Vis spectroscopy.

  8. Exploring the potential of semiconducting BaSi2 for thin-film solar cell applications

    Science.gov (United States)

    Suemasu, Takashi; Usami, Noritaka

    2017-01-01

    Semiconducting barium disilicide (BaSi2), which is composed of earth-abundant elements, has attractive features for thin-film solar cell applications. Both a large absorption coefficient comparable to copper indium gallium diselenide and a minority-carrier diffusion length much larger than the grain size of BaSi2 can be used to improve solar cell properties. In this review article, we explore the potential of semiconducting BaSi2 film for thin-film solar cell applications. We start by describing its crystal and energy band structure, followed by discussing thin-film growth techniques and the optical and electrical properties of BaSi2 films. We use a first-principles calculation based on density-functional theory to calculate the position of the Fermi level to predict the carrier type of impurity-doped BaSi2 films using either a group 13 or 15 element, and compare the calculated results with the experimental ones. Special attention was paid to the minority-carrier properties, such as minority-carrier lifetime, minority-carrier diffusion length, and surface passivation. The potential variations across the grain boundaries measured by Kelvin-probe force microscopy allowed us to detect a larger minority-carrier diffusion length in BaSi2 on Si(1 1 1) compared with BaSi2 on Si(0 0 1). Finally, we demonstrate the operation of p-BaSi2/n-Si heterojunction solar cells and discuss prospects for future development.

  9. Thin film conductive polymer for microactuator and micromuscle applications

    Energy Technology Data Exchange (ETDEWEB)

    Lee, A.P.; Hong, K.; Trevino, J.; Northrup, M.A.

    1994-04-14

    Conductive polymer/polyimide bimorphic microcantilevers have been actuated vertically (out-of-plane) upon the volumetric changes induced by electrochemical doping of the polymer. The microcantilevers that are 200-500 {mu}m in length and 50-100 {mu}m in width can be fully extended from a circularly-curled geometry, and thus generate more than 100 {mu}m displacement. Dynamically the microcantilevers have been driven as fast as 1.2 Hz and the polymer was stable for over a week stored in air and light. Residual stresses in the polymer film is estimated to be as high as 254 MPa, and actuation stresses are as high as 50 MPa.

  10. Applications of Cubic MgZnO Thin Films in Metal-Insulator-Silicon Structures

    Institute of Scientific and Technical Information of China (English)

    LIANG Jun; WU Hui-Zhen; LAO Yan-Feng; QIU Dong-Jiang; CHEN Nai-Bo; XU Tian-Ning

    2004-01-01

    @@ Cubic Mgo.55Zno.45O thin film alloys have been deposited on Si substrates at low growth temperature. The topography of the cross section of the epitaxial film by scanning electronic microscope demonstrates good mor phology and high interfacial quality. The high (001) orientation and wide band-gap (Eg > 5.5 eV) of the cubic Mgo.55Zno.45 O thin films accord with the guidelines for metal-insulator-silicon (MIS) device applications. Using the cubic ternary thin films as insulators, MIS structures have been fabricated. The capacitance-voltage measurements show the flat band voltage shift VFB of11.8 V and mobile ion density Dmc of 5.57 × 1010 cm-2 for the MIS structure. Leakage current density as low as ~ 10-7 A/cm2 is obtained at E = 700 kV/cm by the currentvoltage measurements. These unique structural and electrical properties of the fabricated MIS devices indicate that cubic MgZnO materials could become a new candidate for high-κ dielectrics used in silicon integrated circuit technologies.

  11. Azaisoindigo conjugated polymers for high performance n-type and ambipolar thin film transistor applications

    KAUST Repository

    Yue, Wan

    2016-09-28

    Two new alternating copolymers, PAIIDBT and PAIIDSe have been prepared by incorporating a highly electron deficient azaisoindigo core. The molecular structure and packing of the monomer is determined from the single crystal X-ray diffraction. Both polymers exhibit high EAs and highly planar polymer backbones. When polymers are used as the semiconducting channel for solution-processed thin film transistor application, good properties are observed. A–A type PAIIDBT exhibits unipolar electron mobility as high as 1.0 cm2 V−1 s−1, D–A type PAIIDSe exhibits ambipolar charge transport behavior with predominately electron mobility up to 0.5 cm2 V−1 s−1 and hole mobility to 0.2 cm2 V−1 s−1. The robustness of the extracted mobility values are also commented on in detail. Molecular orientation, thin film morphology and energetic disorder of both polymers are systematically investigated.

  12. Chromium doped TiO2 sputtered thin films synthesis, physical investigations and applications

    CERN Document Server

    Hajjaji, Anouar; Gaidi, Mounir; Bessais, Brahim; El Khakani, My Ali

    2014-01-01

    This book presents co-sputtered processes ways to produce chrome doped TiO2 thin films onto various substrates such as quartz, silicon and porous silicon. Emphasis is given on the link between the experimental preparation and physical characterization in terms of Cr content. Moreover, the structural, optical and optoelectronic investigations are emphasized throughout. The book explores the potencial applications of devices based on Cr doped TiO2 thin films as gas sensors and in photocatalysis and in the photovoltaic industry. Also, this book provides extensive leads into research literature, and each chapter contains details which aim to develop awareness of the subject and the methods used. The content presented here will be useful for graduate students as well as researchers in materials science, physics, chemistry and engineering.

  13. Application of rapid thermal processing on SiNx thin film to solar cells

    Institute of Scientific and Technical Information of China (English)

    Youjie LI; Peiqing LUO; Zhibin ZHOU; Rongqiang CUI; Jianhua HUANG; Jingxiao WANG

    2008-01-01

    Rapid thermal processing (RTP) of SiNx thin films from PECVD with low temperature was investigated. A special processing condition of this technique which could greatly increase the minority lifetime was found in the experiments. The processing mechanism and the application of the technique to silicon solar cells fabrication were dis-cussed. A main achievement is an increase of the minority lifetime in silicon wafer with SiNx thin film by about 200% after the RTP was reached. PC-1D simulation results exhibit an enhancement of the efficiency of the solar cell by 0.42% coming from the minority lifetime improvement. The same experiment was also conducted with P-diffusion silicon wafers, but the increment of minority lifetime is just about 55%. It could be expected to improve the solar cell efficiency if it would be used in silicon solar cells fabrication with the combination of laser firing contact technique.

  14. Ultra thin hydro-films based on lactose-crosslinked fish gelatin for wound healing applications.

    Science.gov (United States)

    Etxabide, Alaitz; Vairo, Claudia; Santos-Vizcaino, Edorta; Guerrero, Pedro; Pedraz, Jose Luis; Igartua, Manoli; de la Caba, Koro; Hernandez, Rosa Maria

    2017-09-15

    This study focuses on the development and characterization of an ultra thin hydro-film based on lactose-mediated crosslinking of fish gelatin by Maillard reaction. Lactose results in the only efficient crosslinker able to produce resistant to handling hydro-films when compared to conventional crosslinkers such as glutaraldehyde or genipin (tested at 25 and 37°C in phosphate buffer saline solution (PBS)).The disappearance of the peak related to the N-containing groups (XPS) and the images obtained by SEM and AFM demonstrate the highly ordered nano-scaled structure of lactose-crosslinked gelatin, confirming the crosslinking efficiency. This dressing presents high hydrophilicity and mild occlusivity, as shown by the swelling curve (max swelling at 5min) and by the occlusion factor of 25.17±0.99%, respectively. It demonstrates high stability to hydrolysis or cell-mediated degradation. Moreover, ISO 10993-5:2009 biocompatibility assay results in undetectable cytotoxicity effects. Spreading, adhesion and proliferation assays confirm the excellent adaptability of the cells onto the hydro-film surface without invading the dressing. Finally, the hydro-film enables the controlled delivery of therapeutic factors, such as the epidermal growth factor (EGF). This study demonstrates that lactose-mediated crosslinking is able to produce ultra thin gelatin hydro-films with suitable properties for biomedical applications, such as wound healing. Copyright © 2017 Elsevier B.V. All rights reserved.

  15. Recent advances in ZnO nanostructures and thin films for biosensor applications: Review

    Energy Technology Data Exchange (ETDEWEB)

    Arya, Sunil K., E-mail: sunilarya333@gmail.com [Bioelectronics Program, Institute of Microelectronics, A-Star 11 Science Park Road, Singapore Science Park II, Singapore 117685 (Singapore); Saha, Shibu [Department of Physics and Astrophysics, University of Delhi, Delhi 110007 (India); Ramirez-Vick, Jaime E. [Engineering Science and Materials Department, University of Puerto Rico, Mayaguez, PR 00681 (United States); Gupta, Vinay [Department of Physics and Astrophysics, University of Delhi, Delhi 110007 (India); Bhansali, Shekhar [Department of Electrical and Computer Engineering, Florida International University, Miami, FL (United States); Singh, Surinder P., E-mail: singh.uprm@gmail.com [National Physical Laboratory, Dr K.S. Krishnan Marg, New Delhi 110012 (India)

    2012-08-06

    Graphical abstract: ZnO nanostructures have shown binding of biomolecules in desired orientation with improved conformation and high biological activity, resulting in enhanced sensing characteristics. Furthermore, their compatibility with complementary metal oxide semiconductor technology for constructing integrated circuits makes them suitable candidate for future small integrated biosensor devices. This review highlights various approaches to synthesize ZnO nanostructures and thin films, and their applications in biosensor technology. Highlights: Black-Right-Pointing-Pointer This review highlights various approaches to synthesize ZnO nanostructures and thin films. Black-Right-Pointing-Pointer Article highlights the importance of ZnO nanostructures as biosensor matrix. Black-Right-Pointing-Pointer Article highlights the advances in various biosensors based on ZnO nanostructures. Black-Right-Pointing-Pointer Article describes the potential of ZnO based biosensor for new generation healthcare devices. - Abstract: Biosensors have shown great potential for health care and environmental monitoring. The performance of biosensors depends on their components, among which the matrix material, i.e., the layer between the recognition layer of biomolecule and transducer, plays a crucial role in defining the stability, sensitivity and shelf-life of a biosensor. Recently, zinc oxide (ZnO) nanostructures and thin films have attracted much interest as materials for biosensors due to their biocompatibility, chemical stability, high isoelectric point, electrochemical activity, high electron mobility, ease of synthesis by diverse methods and high surface-to-volume ratio. ZnO nanostructures have shown the binding of biomolecules in desired orientations with improved conformation and high biological activity, resulting in enhanced sensing characteristics. Furthermore, compatibility with complementary metal oxide semiconductor technology for constructing integrated circuits makes Zn

  16. YIG: Bi2O3 Nanocomposite Thin Films for Magnetooptic and Microwave Applications

    Directory of Open Access Journals (Sweden)

    M. Nur-E-Alam

    2015-01-01

    Full Text Available Y3Fe5O12-Bi2O3 composite thin films are deposited onto Gd3Ga5O12 (GGG substrates and their annealing crystallization regimes are optimized (in terms of both process temperatures and durations to obtain high-quality thin film layers possessing magnetic properties attractive for a range of technological applications. The amount of bismuth oxide content introduced into these nanocomposite-type films is controlled by adjusting the RF power densities applied to both Y3Fe5O12 and Bi2O3 sputtering targets during the cosputtering deposition processes. The measured material properties of oven-annealed YIG-Bi2O3 films indicate that cosputtering of YIG-Bi2O3 composites can provide the flexibility of application-specific YIG layers fabrication of interest for several existing, emerging, and also frontier technologies. Experimental results demonstrate large specific Faraday rotation (of more than 1°/µm at 532 nm, achieved simultaneously with low optical losses in the visible range and very narrow peak-to-peak ferromagnetic resonance linewidth of around ΔHpp= 6.1 Oe at 9.77 GHz.

  17. Mn doped nanostucture ZnO thin film for photo sensor and gas sensor application

    Science.gov (United States)

    Mahajan, Sandip V.; Upadhye, Deepak S.; Shaikh, Shahid U.; Birajadar, Ravikiran B.; Siddiqui, Farha Y.; Ghule, Anil V.; Sharma, Ramphal

    2013-02-01

    Mn doped nanostructure ZnO thin film prepared by soft chemically route method. ZnO thin films were deposited on glass substrate by successive ionic layer adsorption and reaction technique (SILAR). After deposit ZnO thin film dipped in MnSO4 solution for 1 min. The optical properties as absorbance were determined using UV-Spectrophotometer and band gap was also calculated. The Structural properties were studied by XRD. The improvement in gas sensing properties was found to enhance after doping of Mn on ZnO thin film. The Photo Sensor nature was calculated by I-V characteristics.

  18. Synthesis and Characterization of Magnetite/Carbon Nanocomposite Thin Films for Electrochemical Applications

    Institute of Scientific and Technical Information of China (English)

    Suh Cem Pang; Wai Hwa Khoh; Suk Fun Chin

    2011-01-01

    Stable colloidal suspension of magnetite/starch nanocomposite was prepared by a facile and aqueous-based chemical precipitation method, Magnetite/carbon nanocomposite thin films were subsequently formed upon carbonization of the starch component by heat treatment under controlled conditions. The initial content of native sago starch as the carbon source was found to affect the microstructure and electrochemical properties of the resulted magnetite/carbon nanocomposite thin films, A specific capacitance of 124 F/g was achieved for the magnetite/carbon nanocomposite thin films as compared to that of 82 F/g for pure magnetite thin films in Na2SO4 aqueous electrolyte.

  19. Preparation and characterization of superconductor thin films for application in printed circuit boards

    Energy Technology Data Exchange (ETDEWEB)

    Souza, G.A.; Carvalho, C.L.; Torsoni, G.B.; Rodrigues, V.D.; Souza, E.J.; Zadorosny, R. [UNESP, Ilha Solteira, SP (Brazil). Fac. de Engenharia. Grupo de Desenvolvimento e Aplicacoes de Materiais (GDAM)

    2011-07-01

    Full text: Since the discovery of high temperature superconductors (HTS) many studies have been performed, in terms to discover new materials with higher critical temperature and its potential applications. Technological advances have induced to use superconductor materials in the development of new devices that have higher processing speed, storage capacity and are miniaturized, what may imply in great evolution in the electronic area. Thinking about that advances and looking to supply some requirements, this work proposed to prepare a printed circuit board (PCB) with a superconductor thin film using an inexpensive and conventional photographic method. This work was divided in two steps: synthesis of the precursor solution and film preparation for superconductor printed circuit. In the preparation of superconductor thin film was considered to use the 2223 phase of the BSCCO system, which has been doped with Pb (BPSCCO) for stabilizing the same, and it presents a critical temperature around 110 K. This film was prepared from a precursor solution based on similar method developed by M. P. Pechini. The printed circuit was created by the photographic method of heat transfer which consisted of creation a circuit layout, with different dimensions and printed on photo paper (Epson S041140). The layout was transferred to the FR4 printed copper clad laminate was made with the household clothes iron. The precursor solution was deposited on Si substrate by spin-coating. The control of film thickness was performed by the deposition number that in this case was done five subsequent depositions to obtain an ideal thickness. Between each deposition the film was submitted to calcinations in order to eliminate organic matter. After that the film was submitted a heat treatment around 820 deg C / 5 minutes to obtain the expected superconducting phase and coupling and the grain growth. Film characterizations were made using optical microscopy, XRD and EDX, to check the dimensions and

  20. Deoxyribonucleic acid-based hybrid thin films for potential application as high energy density capacitors

    Science.gov (United States)

    Joyce, Donna M.; Venkat, Narayanan; Ouchen, Fahima; Singh, Kristi M.; Smith, Steven R.; Grabowski, Christopher A.; Terry Murray, P.; Grote, James G.

    2014-03-01

    Deoxyribonucleic acid (DNA) based hybrid films incorporating sol-gel-derived ceramics have shown strong promise as insulating dielectrics for high voltage capacitor applications. Our studies of DNA-CTMA (cetyltrimethylammonium) complex/sol-gel ceramic hybrid thin film devices have demonstrated reproducibility and stability in temperature- and frequency-dependent dielectric properties with dielectric constant k ˜ 5.0 (1 kHz), as well as reliability in DC voltage breakdown measurements, attaining values consistently in the range of 300-350 V/μm. The electrical/dielectric characteristics of DNA-CTMA films with sol-gel-derived ceramics were examined to determine the critical energy storage parameters such as voltage breakdown and dielectric constant.

  1. Non-Evaporable Getter Thin Film Coatings for Vacuum Applications

    CERN Document Server

    Prodromides, A E

    2002-01-01

    Getters are solid materials capable of chemisorbing gas molecules on their surface: getters are chemical pumps. They are widely used for a variety of applications such as in particle accelerators, vacuum tubes, field-emission display (FED), inert gas purification systems, H2 plasma purification, hydrogen species recycling as in the Tokamak Fusion Test Reactor. Among the different Non-Evaporable Getter (NEG) materials tested, the TiZrV alloys have the lowest activation temperature. For this reason, the TiZrV coatings were the object of this work. In particular, the aim of this investigation was to understand how to optimise three important properties of TiZrV coatings: to achieve the lowest possible activation temperature (Ta), and to obtain the highest pumping speed and surface pumping capacity. This objective is important in the context of the Large Hadron Collider (LHC) accelerator, since, before this work, the understanding and the knowledge of the TiZrV coatings properties were insufficient to adopt it fo...

  2. Organic-inorganic Hybrids Towards the Preparation of Nanoporous Composite Thin Films for Microelectronic Application

    Institute of Scientific and Technical Information of China (English)

    2002-01-01

    Silicon containing materials have traditionally been used in microelectronic fabrication. Semiconductor devices often have one or more arrays of patterned interconnect levels that serve to electrically couple the individual circuit elements forming an integrated circuit. These interconnect levels are typically separated by an insulating or dielectric film. Previously, a silicon oxide film was the most commonly used material for such dielectric films having dielectric constants(k) near 4. 0. However, as the feature size is continuously scaling down, the relatively high k of such silicon oxide films became inadequate to provide efficient electrical insulation. As such, there has been an increasing market demand for materials with even lower dielectric constant for Interlayer Dielectric (ILD) applications, yet retaining thermal and mechanical integrity. We wish to report here our investigations on the preparation of ultra-low k ILD materials using a sacrificial approach whereby organic groups are burnt out to generate low k porous ORMOSIL films. We have been able to prepare a variety of organically modified silicone resins leading to highly microporous thin films, exhibiting ultra-low k from 1.80 to 2.87, and good to high modulus, 1.5 to 5.5 Gpa. Structure property influences on porosity, dielectric constant and modulus will be discussed.

  3. Zinc sulfide thin films deposited by RF reactive sputtering for photovoltaic applications

    Energy Technology Data Exchange (ETDEWEB)

    Shao Lexi; Chang, K.-H.; Hwang, H.-L

    2003-05-15

    Zinc sulfide (ZnS) thin films with nano-scale grains of about 50 nm were deposited on glass substrates at a substrate temperature of 200 deg. C via RF reactive sputtering by using zinc plate target and hydrogen sulfide gas. The structure, compositions, electrical and optical characteristics of the deposited films were investigated for the photovoltaic device applications. All films showed a near stoichiometric composition as indicated in their AES data. Distinct single crystalline phase with preferential orientation along the (0 0 0 1) plane of wurtzite or the (1 1 1) plane of zinc blende (ZB) was revealed in their X-ray diffraction (XRD) patterns, and the spacing of the planes are well matched to those of (1 1 2) plane of the chalcopyrite CuInS{sub 2} (CIS). UV-Vis measurement showed that the films had more than 65% transmittance in the wavelength larger than 350 nm, and the fundamental absorption edge shifted to shorter wavelength with the increase of sulfur incorporated in the films, which corresponds to an increase in the energy band gap ranging from 3.59 to 3.72 eV. It was found that ZnS films are suitable for use as the buffer layer of the CIS solar cells, and it is the viable alternative for replacing CdS in the photovoltaic cell structure.

  4. Surface-area-controlled synthesis of porous TiO2 thin films for gas-sensing applications

    Science.gov (United States)

    Park, Jae Young; Kim, Ho-hyoung; Rana, Dolly; Jamwal, Deepika; Katoch, Akash

    2017-03-01

    Surface-area-controlled porous TiO2 thin films were prepared via a simple sol–gel chemical route, and their gas-sensing properties were thoroughly investigated in the presence of typical oxidizing NO2 gas. The surface area of TiO2 thin films was controlled by developing porous TiO2 networked by means of controlling the TiO2-to-TTIP (titanium isopropoxide, C12H28O4Ti) molar ratio, where TiO2 nanoparticles of size ∼20 nm were used. The sensor’s response was found to depend on the surface area of the TiO2 thin films. The porous TiO2 thin-film sensor with greater surface area was more sensitive than those of TiO2 thin films with lesser surface area. The improved sensing ability was ascribed to the porous network formed within the thin films by TiO2 sol. Our results show that surface area is a key parameter for obtaining superior gas-sensing performance; this provides important guidelines for preparing and using porous thin films for gas-sensing applications.

  5. Surface-area-controlled synthesis of porous TiO2 thin films for gas-sensing applications.

    Science.gov (United States)

    Park, Jae Young; Kim, Ho-Hyoung; Rana, Dolly; Jamwal, Deepika; Katoch, Akash

    2017-03-03

    Surface-area-controlled porous TiO2 thin films were prepared via a simple sol-gel chemical route, and their gas-sensing properties were thoroughly investigated in the presence of typical oxidizing NO2 gas. The surface area of TiO2 thin films was controlled by developing porous TiO2 networked by means of controlling the TiO2-to-TTIP (titanium isopropoxide, C12H28O4Ti) molar ratio, where TiO2 nanoparticles of size ∼20 nm were used. The sensor's response was found to depend on the surface area of the TiO2 thin films. The porous TiO2 thin-film sensor with greater surface area was more sensitive than those of TiO2 thin films with lesser surface area. The improved sensing ability was ascribed to the porous network formed within the thin films by TiO2 sol. Our results show that surface area is a key parameter for obtaining superior gas-sensing performance; this provides important guidelines for preparing and using porous thin films for gas-sensing applications.

  6. CVD of polymeric thin films: applications in sensors, biotechnology, microelectronics/organic electronics, microfluidics, MEMS, composites and membranes.

    Science.gov (United States)

    Ozaydin-Ince, Gozde; Coclite, Anna Maria; Gleason, Karen K

    2012-01-01

    Polymers with their tunable functionalities offer the ability to rationally design micro- and nano-engineered materials. Their synthesis as thin films have significant advantages due to the reduced amounts of materials used, faster processing times and the ability to modify the surface while preserving the structural properties of the bulk. Furthermore, their low cost, ease of fabrication and the ability to be easily integrated into processing lines, make them attractive alternatives to their inorganic thin film counterparts. Chemical vapor deposition (CVD) as a polymer thin-film deposition technique offers a versatile platform for fabrication of a wide range of polymer thin films preserving all the functionalities. Solventless, vapor-phase deposition enable the integration of polymer thin films or nanostructures into micro- and nanodevices for improved performance. In this review, CVD of functional polymer thin films and the polymerization mechanisms are introduced. The properties of the polymer thin films that determine their behavior are discussed and their technological advances and applications are reviewed.

  7. Development of Nb and Alternative Material Thin Films Tailored for SRF Applications

    Energy Technology Data Exchange (ETDEWEB)

    Valente-Feliciano, A -M; Reece, C E; Spradlin, J K; Xiao, B; Zhao, X; Gu, Diefeng; Baumgart, Helmut; Beringer, Douglas; Lukaszew, Rosa

    2011-09-01

    Over the years, Nb/Cu technology, despite its shortcomings due to the commonly used magnetron sputtering, has positioned itself as an alternative route for the future of superconducting structures used in accelerators. Recently, significant progress has been made in the development of energetic vacuum deposition techniques, showing promise for the production of thin films tailored for SRF applications. JLab is pursuing energetic condensation deposition via techniques such as Electron Cyclotron Resonance and High Power Impulse Magnetron Sputtering. As part of this project, the influence of the deposition energy on the material and RF properties of the Nb thin film is investigated with the characterization of their surface, structure, superconducting properties and RF response. It has been shown that the film RRR can be tuned from single digits to values greater than 400. This paper presents results on surface impedance measurements correlated with surface and material characterization for Nb films produced on various substrates, monocrystalline and polycrystalline as well as amorphous. A progress report on work on NbTiN and AlN based multilayer structures will also be presented.

  8. Mechanical integrity and adhesion of thin films for applications in electronics packaging and cell biology

    Energy Technology Data Exchange (ETDEWEB)

    Duan Jin; Wan Kaitak; Chian Kermsin

    2003-01-22

    A new theoretical model was developed for a pull-off adhesion test using an axisymmetric flat punch and a rectangular flat punch adhered to a thin polymer film interface. An elastic solution was derived to portray the mechanical integrity of the thin film. A mechanical energy release rate was calculated numerically. As the punch was pulled away from the adhered film, the film deformed under mixed bending and stretching. Both stiffness and thickness of the film were allowed to vary. The derived solid-film 'pull-off' events sharply contrast with the abrupt pull-off in solid-solid adhesion as predicted by the classical JKR theory.

  9. Thin-film forces in pseudoemulsion films

    Energy Technology Data Exchange (ETDEWEB)

    Bergeron, V.; Radke, C.J. [California Univ., Berkeley, CA (United States). Dept. of Chemical Engineering]|[Lawrence Berkeley Lab., CA (United States)

    1991-06-01

    Use of foam for enhanced oil recovery (EOR) has shown recent success in steam-flooding field applications. Foam can also provide an effective barrier against gas coning in thin oil zones. Both of these applications stem from the unique mobility-control properties a stable foam possesses when it exists in porous media. Unfortunately, oil has a major destabilizing effect on foam. Therefore, it is important for EOR applications to understand how oil destroys foam. Studies all indicate that stabilization of the pseudoemulsion film is critical to maintain foam stability in the presence of oil. Hence, to aid in design of surfactant formulations for foam insensitivity to oil the authors pursue direct measurement of the thin-film or disjoining forces that stabilize pseudoemulsion films. Experimental procedures and preliminary results are described.

  10. High-frequency applications of high-temperature superconductor thin films

    Science.gov (United States)

    Klein, N.

    2002-10-01

    High-temperature superconducting thin films offer unique properties which can be utilized for a variety of high-frequency device applications in many areas related to the strongly progressing market of information technology. One important property is an exceptionally low level of microwave absorption at temperatures attainable with low power cryocoolers. This unique property has initiated the development of various novel type of microwave devices and commercialized subsystems with special emphasis on application in advanced microwave communication systems. The second important achievement related to efforts in oxide thin and multilayer technology was the reproducible fabrication of low-noise Josephson junctions in high-temperature superconducting thin films. As a consequence of this achievement, several novel nonlinear high-frequency devices, most of them exploiting the unique features of the ac Josephson effect, have been developed and found to exhibit challenging properties to be utilized in basic metrology and Terahertz technology. On the longer timescale, the achievements in integrated high-temperature superconductor circuit technology may offer a strong potential for the development of digital devices with possible clock frequencies in the range of 100 GHz.

  11. Fully Integrated Applications of Thin Films on Low Temperature Cofired Ceramic (LTCC)

    Energy Technology Data Exchange (ETDEWEB)

    Ambrose Wolf; Ken Peterson; Matt O' Keefe; Wayne Huebner; Bill Kuhn

    2012-04-19

    Thin film multilayers have previously been introduced on multilayer low temperature cofired ceramic (LTCC), as well as initial thin film capacitors on LTCC. The ruggedness of a multipurpose Ti-Cu-Pt-Au stack for connectivity and RF conductivity has continued to benefit fabrication and reliability in state of-the-art modules, while the capacitors have followed the traditional Metal-Insulator-Metal (MIM) style. The full integration of thin film passives with thin film connectivity traces is presented. Certain passives, such as capacitors, require specifically tailored and separately patterned thin film (multi-)layers, including a dielectric. Different capacitance values are achieved by variation of both the insulator layer thickness and the active area of the capacitor. Other passives, such as filters, require only the conductor - a single thin film multilayer. This can be patterned from the same connectivity thin film material (Ti-Cu-Pt-Au), or a specially tailored thin film material (e.g. Ti-Cu-Au) can be deposited. Both versions are described, including process and integration details. Examples are discussed, ranging from patterning for maximum tolerances, to space and performance-optimized designs. Cross-sectional issues associated with integration are also highlighted in the discussion.

  12. Conductive polymer/fullerene blend thin films with honeycomb framework for transparent photovoltaic application

    Energy Technology Data Exchange (ETDEWEB)

    Cotlet, Mircea; Wang, Hsing-Lin; Tsai, Hsinhan; Xu, Zhihua

    2015-04-21

    Optoelectronic devices and thin-film semiconductor compositions and methods for making same are disclosed. The methods provide for the synthesis of the disclosed composition. The thin-film semiconductor compositions disclosed herein have a unique configuration that exhibits efficient photo-induced charge transfer and high transparency to visible light.

  13. Transition metal oxide thin films for nonvolatile resistive random access memory applications

    National Research Council Canada - National Science Library

    BAO, Dinghua

    2009-01-01

    .... This paper briefly reviews the status and new progress on binary transition metal oxide thin film materials such as NiO, TiO2, ZrO2, ZnO, and their multilayered thin films and metal nanocomposite...

  14. Surface and Thin Film Analysis A Compendium of Principles, Instrumentation, and Applications

    CERN Document Server

    Friedbacher, Gernot

    2011-01-01

    Surveying and comparing all techniques relevant for practical applications in surface and thin film analysis, this second edition of a bestseller is a vital guide to this hot topic in nano- and surface technology. This new book has been revised and updated and is divided into four parts - electron, ion, and photon detection, as well as scanning probe microscopy. New chapters have been added to cover such techniques as SNOM, FIM, atom probe (AP),and sum frequency generation (SFG). Appendices with a summary and comparison of techniques and a list of equipment suppliers make this book a rapid ref

  15. Amorphous Hydrogenated Carbon-Nitrogen Alloy Thin Films for Solar Cell Application

    Institute of Scientific and Technical Information of China (English)

    ZHOU Zhi-Bin; DING Zheng-Ming; PANG Qian-Jun; CUI Rong-Qiang

    2001-01-01

    Amorphous hydrogenated carbon-nitrogen alloy (a-CNx :H) thin films have been deposited on silicon substratesby improved dc magnetron sputtering from a graphite target in nitrogen and hydrogen gas discharging. Thefilms are investigated by using Raman spectroscopy, x-ray photoelectron spectroscopy, spectral ellipsometer and electron spin resonance techniques. The optimized process condition for solar cell application is discussed. Thephotovoltaic property of a-CNx:H/silicon heterojunctions can be improved by the adjustment of the pressureratio of hydrogen to nitrogen and unbalanced magnetic field intensity. Open-circuit voltage and short-circuitcurrent reach 300mV and 5.52 Ma/cm2, respectively.

  16. Iridium thin films deposited via pulsed laser deposition for future applications as transition-edge sensors

    Energy Technology Data Exchange (ETDEWEB)

    Galeazzi, M. E-mail: galeazzi@physics.miami.edu; Chen, C.; Cohn, J.L.; Gundersen, J.O

    2004-03-11

    The University of Miami has recently started developing and studying high-resolution microcalorimeters operating near 100 mK for X-ray and particle physics and astrophysics. These detectors will be based on Transition Edge Sensors technology fabricated using iridium thin films deposited via the Pulsed Laser Deposition technique. We report here the preliminary result of the room temperature characterization of the Ir thin films, and an overview of future plans to use the films as transition edge sensors.

  17. Deposition and characterization of titanium dioxide and hafnium dioxide thin films for high dielectric applications

    Science.gov (United States)

    Yoon, Meeyoung

    The industry's demand for higher integrated circuit density and performance has forced the gate dielectric layer thickness to decrease rapidly. The use of conventional SiO2 films as gate oxide is reaching its limit due to the rapid increase in tunneling current. Therefore, a need for a high dielectric material to produce large oxide capacitance and low leakage current has emerged. Metal-oxides such as titanium dioxide (TiO2) and hafnium dioxide (HfO2) are attractive candidates for gate dielectrics due to their electrical and physical properties suitable for high dielectric applications. MOCVD of TiO2 using titanium isopropoxide (TTIP) precursor on p-type Si(100) has been studied. Insertion of a TiO x buffer layer, formed by depositing metallic Ti followed by oxidation, at the TiO2/Si interface has reduced the carbon contamination in the TiO2 film. Elemental Ti films, analyzed by in-situ AES, were found to grow according to Stranski-Krastanov mode on Si(100). Carbon-free, stoichiometric TiO2 films were successfully produced on Si(100) without any parasitic SiO2 layers at the TiO 2/Si interface. Electron-beam deposition of HfO2 films on Si(100) has also been investigated in this work. HfO2 films are formed by depositing elemental Hf on Si(100) and then oxidizing it either in O2 or O 3. XPS results reveal that with oxidation Hf(4f) peak shifts +3.45eV with 02 and +3.65eV with O3 oxidation. LEED and AFM studies show that the initially ordered crystalline Hf becomes disordered after oxidation. The thermodynamic stability of HfO2 films on Si has been studied using a unique test-bed structure of Hf/O3/Si. Post-Oxidation of Layer Deposition (POLD) has been employed to produce HfO2 films with a desired thickness. XPS results indicate that stoichiometric HfO 2 films were successfully produced using the POLD process. The investigation of the growth and thin film properties of TiO 2 and HfO2 using oxygen and ozone has laid a foundation for the application of these metal

  18. Effect of Ag doping on opto-electrical properties of CdS thin films for solar cell applications

    Energy Technology Data Exchange (ETDEWEB)

    Nazir, Adnan, E-mail: adnan.nazir@iit.it [Istituto Italiano di Tecnologia, Via Morego 30, I-16163 Genova (Italy); School of Chemical and Materials Engineering, National University of Sciences and Technology, Islamabad (Pakistan); Toma, Andrea [Istituto Italiano di Tecnologia, Via Morego 30, I-16163 Genova (Italy); Shah, Nazar Abbas [Department of Physics, COMSATS Institute of Information Technology, Islamabad (Pakistan); Panaro, Simone [Istituto Italiano di Tecnologia, Via Morego 30, I-16163 Genova (Italy); Butt, Sajid [Department of Materials Science and Engineering, Institute of Space Technology (IST), Islamabad 44000 (Pakistan); School of Chemical and Materials Engineering, National University of Sciences and Technology, Islamabad (Pakistan); Sagar, Rizwan ur Rehman [Department of Physics, COMSATS Institute of Information Technology, Islamabad (Pakistan); Raja, Waseem [Istituto Italiano di Tecnologia, Via Morego 30, I-16163 Genova (Italy); Rasool, Kamran [Micro and Nano Devices Group, Department of Metallurgy and Materials Engineering Pakistan, Institute of Engineering and Applied Sciences (PIEAS), P.O. Nilore, Islamabad 45650 (Pakistan); Maqsood, Asghari [Department of Physics, Air University, Islamabad (Pakistan)

    2014-10-01

    Highlights: • Polycrystalline CdS thin films are fabricated by means of Close Spaced Sublimation technique. • Ag is doped by simple ion-exchange technique in order to reduce resistivity of CdS thin films. • Remarkable reduction in resistivity without introducing many transparency losses. - Abstract: Cadmium sulfide (CdS) polycrystalline thin films of different thicknesses (ranging from 370 nm to 750 nm) were fabricated on corning glass substrates using Close Spaced Sublimation (CSS) technique. Optical and electrical investigation revealed that CdS thin films show an appreciable transparency (50–70% transmission) in visible range and a highly resistive behavior (10{sup 6} Ω cm). Samples were doped by silver (Ag) at different concentrations, using ion exchange technique, in order to reduce the resistivity of CdS thin films and to improve their efficiency as a window layer for solar cell application. The doping of Ag in pure CdS thin films resulted into an increase of surface roughness and a decrease both in electrical resistivity and in transparency. By optimizing annealing parameters, we were able to properly control the optical properties of the present system. In fact, the Ag doping of pure CdS films has led to a decrease of the sample resistivity by three orders of magnitude (10{sup 3} Ω cm) against a 20% cut in optical transmission.

  19. Ultrafast Pulsed-Laser Applications for Semiconductor Thin Film Deposition and Graphite Photoexfoliation

    Science.gov (United States)

    Oraiqat, Ibrahim Malek

    This thesis focuses on the application of ultrafast lasers in nanomaterial synthesis. Two techniques are investigated: Ultrafast Pulsed Laser Deposition (UFPLD) of semiconductor nanoparticle thin films and ultrafast laser scanning for the photoexfoliation of graphite to synthesize graphene. The importance of the work is its demonstration that the process of making nanoparticles with ultrafast lasers is extremely versatile and can be applied to practically any material and substrate. Moreover, the process is scalable to large areas: by scanning the laser with appropriate optics it is possible to coat square meters of materials (e.g., battery electrodes) quickly and inexpensively with nanoparticles. With UFPLD we have shown there is a nanoparticle size dependence on the laser fluence and the optical emission spectrum of the plume can be used to determine a fluence that favors smaller nanoparticles, in the range of 10-20 nm diameter and 3-5 nm in height. We have also demonstrated there are two structural types of particles: amorphous and crystalline, as verified with XRD and Raman spectroscopy. When deposited as a coating, the nanoparticles can behave as a quasi-continuous thin film with very promising carrier mobilities, 5-52 cm2/Vs, substantially higher than for other spray-coated thin film technologies and orders of magnitude larger than those of colloidal quantum dot (QD) films. Scanning an ultrafast laser over the surface of graphite was shown to produce both filamentary structures and sheets which are semi-transparent to the secondary-electron beam in SEM. These sheets resemble layers of graphene produced by exfoliation. An ultrafast laser "printing" configuration was also identified by coating a thin, transparent substrate with graphite particles and irradiating the back of the film for a forward transfer of material onto a receiving substrate. A promising application of laser-irradiated graphene coatings was investigated, namely to improve the charge

  20. Low thermal budget rapid thermal annealing of hydrogenated PECVD silicon thin films for photovoltaic applications

    Energy Technology Data Exchange (ETDEWEB)

    El-Gohary, H.G.; Farrokh-Baroughi, M.; Sivoththaman, S. [Waterloo Univ., ON (Canada). Dept. of Electrical and Computer Engineering

    2006-07-01

    The photovoltaic (PV) market is currently dominated by crystalline silicon solar cells, having a market share of more than 84 per cent. Half of the total price of the PV modules is attributed to the cost of silicon base materials. This paper presented a new approach towards low cost solar cell technologies. In particular, it presented a low temperature plasma enhanced chemical vapor deposition (PECVD) technique for emitter realization. The technique improves the junction quality by a medium temperature low thermal budget rapid thermal annealing (RTA) technique. The many advantages that RTA has for silicon processing was discussed with reference to rapid thermal processing (RTP) used for annealing low temperature deposited silicon thin films. Some of the attractive features of RTP include low cost, minimum overall thermal budget, low power consumption and high throughput. For all the annealed samples in this study which were deposited without hydrogen dilution, 90 per cent of the surface was full of pits caused mainly by hydrogen evolution from the films. It was suggested that high hydrogen dilution can enhance the film quality and reduce the number and size of pits for device applications, particularly for the solar cell applications. However, it was concluded that the growth mechanism of 91 per cent and 99 per cent hydrogen dilution on c-Si and glass substrates using the same process conditions are different and may lead to quasiepitaxial growth mechanism for the films deposited on the crystalline wafers. 21 tabs., 3 tabs., 9 figs.

  1. Deposition of Y thin films by nanosecond UV pulsed laser ablation for photocathode application

    Energy Technology Data Exchange (ETDEWEB)

    Lorusso, A. [Università del Salento, Dipartimento di Matematica e Fisica “E. De Giorgi”, 73100 Lecce (Italy); Istituto Nazionale di Fisica Nucleare-Lecce, 73100 Lecce (Italy); Anni, M. [Università del Salento, Dipartimento di Matematica e Fisica “E. De Giorgi”, 73100 Lecce (Italy); Caricato, A.P. [Università del Salento, Dipartimento di Matematica e Fisica “E. De Giorgi”, 73100 Lecce (Italy); Istituto Nazionale di Fisica Nucleare-Lecce, 73100 Lecce (Italy); Gontad, F., E-mail: francisco.gontad@le.infn.it [Università del Salento, Dipartimento di Matematica e Fisica “E. De Giorgi”, 73100 Lecce (Italy); Istituto Nazionale di Fisica Nucleare-Lecce, 73100 Lecce (Italy); Perulli, A. [Università del Salento, Dipartimento di Matematica e Fisica “E. De Giorgi”, 73100 Lecce (Italy); Taurino, A. [National Research Council, Institute for Microelectronics & Microsystems, 73100 Lecce (Italy); Perrone, A. [Università del Salento, Dipartimento di Matematica e Fisica “E. De Giorgi”, 73100 Lecce (Italy); Istituto Nazionale di Fisica Nucleare-Lecce, 73100 Lecce (Italy); Chiadroni, E. [Laboratori Nazionali di Frascati, Istituto Nazionale di Fisica Nucleare, 00044 Frascati (Italy)

    2016-03-31

    In this work, yttrium (Y) thin films have been deposited on Si (100) substrates by the pulsed laser deposition technique. Ex-situ morphological, structural and optical characterisations of such films have been performed by scanning electron microscopy, X-ray diffractometry, atomic force microscopy and ellipsometry. Polycrystalline films with a thickness of 1.2 μm, homogenous with a root mean square roughness of about 2 nm, were obtained by optimised laser irradiation conditions. Despite the relatively high thickness, the films resulted very adherent to the substrates. The high quality of such thin films is important to the synthesis of metallic photocathodes based on Y thin film, which could be used as electron sources of high photoemission performance in radio-frequency guns. - Highlights: • Pulsed laser deposition of Yttrium thin films is investigated. • 1.2 μm thick films were deposited with very low RMS roughness. • The Y thin films were very adherent to the Si substrate • Optical characterisation showed a very high absorption coefficient for the films.

  2. Magnetoelectric thin films for electrically controlled exchange bias in spintronic applications

    Science.gov (United States)

    He, Xi; Sahoo, Sarbeswar; Polisetty, Srinivas; Wang, Yi; Mukherjee, Tathagata; Binek, Christian

    2007-03-01

    Epitaxial (111) oriented thin films of magnetoelectric (ME) Cr2O3 are grown by MBE. These films are the key component of Cr2O3(111)/(Co/Pt)3 heterostructures allowing for electrically controlled exchange bias (EB) and novel spintronic applications [1]. Pure voltage control of magnetic configurations in TMR-type devices is proposed as an alternative to current-induced switching. Basic effects of electrically controlled EB and its ME switching are studied by magnetometry and polar Kerr rotation. Exchange coupling between the ME antiferromagnet Cr2O3 and the ferromagnetic CoPt multilayer gives rise to perpendicular EB. The latter is controlled by axial electric fields inducing excess magnetization at the interface which controlls the EB field. Recently, the sign of the EB field has been tuned via a field cooling procedure where a Cr2O3(111) bulk/(Co/Pt)3 system is exposed to either parallel or antiparallel axial magnetic and electric fields [2]. Here we study this ME switching effect in an all thin film heterostructure. [1] Ch.Binek, B.Doudin, J. Phys. Condens. Matter 17, L39 (2005). [2] P.Borisov et al., Phys. Rev. Lett. 94, 117203 (2005).

  3. Development of polyelectrolyte multilayer thin film composite membrane for water desalination application

    KAUST Repository

    Fadhillah, F.

    2013-06-01

    Thin film composite membranes were fabricated via spin assisted layer by layer (SA-LbL) assembly by depositing alternate layers of poly(allyl amine hydrochloride) (PAH) and poly(acrylic acid) (PAA) on a polysulfone (PSF) ultrafiltration membrane as support. The suitability of these membranes for potential water purification applications was explored by testing the stability of the deposited thin films and their permeation characteristic using cross-flow permeation cell. Permeation test conducted at a pressure of 40bar, temperature of 25°C, pH of 6 and feed water concentration of 2000ppm NaCl demonstrated that the PAH/PAA multilayer film deposited on polysulfone support remained stable and intact under long-term test conditions. The 120 bilayers of PAH/PAA membrane tested at the above condition showed flux of 15L/m2.h and salt rejection of 65%. The membrane performance evaluation also revealed that SA-LbL PAH/PAA membrane follows the characteristics of the solution diffusion membrane. © 2013 Elsevier B.V.

  4. Thin-film metal hydrides.

    Science.gov (United States)

    Remhof, Arndt; Borgschulte, Andreas

    2008-12-01

    The goal of the medieval alchemist, the chemical transformation of common metals into nobel metals, will forever be a dream. However, key characteristics of metals, such as their electronic band structure and, consequently, their electric, magnetic and optical properties, can be tailored by controlled hydrogen doping. Due to their morphology and well-defined geometry with flat, coplanar surfaces/interfaces, novel phenomena may be observed in thin films. Prominent examples are the eye-catching hydrogen switchable mirror effect, the visualization of solid-state diffusion and the formation of complex surface morphologies. Thin films do not suffer as much from embrittlement and/or decrepitation as bulk materials, allowing the study of cyclic absorption and desorption. Therefore, thin-metal hydride films are used as model systems to study metal-insulator transitions, for high throughput combinatorial research or they may be used as indicator layers to study hydrogen diffusion. They can be found in technological applications as hydrogen sensors, in electrochromic and thermochromic devices. In this review, we discuss the effect of hydrogen loading of thin niobium and yttrium films as archetypical examples of a transition metal and a rare earth metal, respectively. Our focus thereby lies on the hydrogen induced changes of the electronic structure and the morphology of the thin films, their optical properties, the visualization and the control of hydrogen diffusion and on the study of surface phenomena and catalysis.

  5. A convenient electrolytic assembly of graphene-MOF composite thin film and its photoanodic application

    Science.gov (United States)

    Kaur, Rajnish; Kim, Ki-Hyun; Deep, Akash

    2017-02-01

    In the recent past, the metal organic frameworks (MOFs) have been recognized as attractive photosensitizer materials due to their hierarchically ordered structures and attractive light-harvesting characteristics. In this work, we report the application of a graphene-MOF composite as a potential photosensitizer material in dye-sensitized solar cells (DSSCs). A thin film of graphene-MOF hybrid composite was electrochemically assembled on a TiO2/FTO substrate and the different characteristics of the prepared film were investigated. This novel photoanode material hybrid structure demonstrated the potency of an alternative solid-state DSSC configuration. The 2.2% observed power conversion efficiency of the above graphene-MOF composite is a good basis for the further development of graphene-MOF composite-based photoanodes.

  6. Metal Oxide Thin Film Growth by Laser Ablation and Its Applications in High Surface Area Photoanodes

    Science.gov (United States)

    Ghosh, Rudresh

    Thin films are widely used in various applications, including but not limited to simple reflective coatings for mirrors, electrodes for lithium batteries, conducting substrates for electronic circuits, gas sensors and solar cells. As the scope of their applications has widened over the years so has the need to obtain different structural motifs for thin films. A large variety of fabrication techniques are commonly employed to obtain these structures. Pulsed laser deposition (PLD) can be used to obtain films varying from extremely compact and only a few angstroms thick to micron thick porous structures. In this dissertation I introduce a model for predicting different structures as a function of laser parameters and deposition environments in a pulsed laser deposition system. This is followed by a comparison of simulated and experimentally obtained structures. I then use this model to obtain tailored structures suited for individual applications. One of the unique structures obtained using the PLD consists of vertically-aligned structures with nanoparticles as their building blocks. I investigate the superiority of this unique structure over random nanoparticle networks as photoanodes for titanium dioxide (TiO 2)-based dye-sensitized solar cells (DSSC). UV-Vis studies show that there is a 1.4 x enhancement of surface area for PLD-TiO2 photoanodes compared to the best sol-gel films. PLD-TiO2 incident photon to current efficiency (IPCE) values are comparable to 3 x thicker sol-gel films and nearly 92% absorbed photon to current efficiency (APCE) values have been observed for optimized structures. I also examine the suitability of PLD-synthesized niobium oxide (Nb2O5) and tantalum-doped titanium oxide (Ta: TiO2) as photoanode materials. For optimized PLD-Nb2 O5 based DSSCs IPCE values up to 40%, APCE values around 90% and power conversion efficiency of 2.41% were obtained. DSSCs made of PLD-Ta:TiO2 show enhanced photocurrents as well photo efficiency over those based

  7. Molecularly thin fluoro-polymeric nanolubricant films: tribology, rheology, morphology, and applications.

    Science.gov (United States)

    Chung, Pil Seung; Jhon, Myung S; Choi, Hyoung Jin

    2016-03-21

    Molecularly thin perfluoropolyether (PFPE) has been used extensively as a high-performance lubricant in various applications and, more importantly, on carbon overcoats to enhance the reliability and lubrication of micro-/nanoelectro-mechanical systems, where the tribological performance caused by its molecular architecture is a critical issue, as are its physical properties and rheological characteristics. This Highlight addresses recent trends in the development of fluoro-polymeric lubricant films with regard to their tribology, rheology, and physio-chemical properties as they relate to heat-assisted magnetic recording. Nanorheology has been employed to examine the dynamic response of nonfunctional and functional PFPEs, while the viscoelastic properties of nanoscale PFPE films and the relaxation processes as a function of molecular structure and end-group functionality were analyzed experimentally; furthermore, the characteristics of binary blends were reported.

  8. Hybrid nanostructured thin-films by PLD for enhanced field emission performance for radiation micro-nano dosimetry applications

    Energy Technology Data Exchange (ETDEWEB)

    Manikandan, E., E-mail: maniphysics@gmail.com [UNESCO-UNISA AFNET in Nanosciences/Nanotechnology, College of Graduate Studies, University of South Africa, Muckleneuk Ridge, PO Box 392, Pretoria (South Africa); Nanosciences African Network (NANOAFNET), Materials Research Department, iThemba LABS–National Research Foundation (NRF), 1 Old Faure Road, Somerset West, PO Box 722, Western Cape (South Africa); Materials Science Group (MSG), Indira Gandhi Centre for Atomic Research (IGCAR), Kalpakkam 603102 (India); Corrosion Science and Technology Group, Indira Gandhi Centre for Atomic Research (IGCAR), Kalpakkam 603102 (India); Sree Balaji Medical College & Hospital (SBMCH), Bharath University, Chrompet, Chennai 600044 (India); Kennedy, J. [UNESCO-UNISA AFNET in Nanosciences/Nanotechnology, College of Graduate Studies, University of South Africa, Muckleneuk Ridge, PO Box 392, Pretoria (South Africa); Nanosciences African Network (NANOAFNET), Materials Research Department, iThemba LABS–National Research Foundation (NRF), 1 Old Faure Road, Somerset West, PO Box 722, Western Cape (South Africa); The MacDiarmid Institute for Advanced Materials and Nanotechnology (New Zealand); Kavitha, G. [UNESCO-UNISA AFNET in Nanosciences/Nanotechnology, College of Graduate Studies, University of South Africa, Muckleneuk Ridge, PO Box 392, Pretoria (South Africa); Nanosciences African Network (NANOAFNET), Materials Research Department, iThemba LABS–National Research Foundation (NRF), 1 Old Faure Road, Somerset West, PO Box 722, Western Cape (South Africa); PG& Research Dept of Physics, AM Jain College Affiliated to University of Madras, Chennai 600114 (India); and others

    2015-10-25

    We report the observation of hybrid nanostructured thin-films such as diamond-like carbon (DLC) signature on the ZnO epitaxial thin-films grown onto the device silicon/quartz substrate by reactive pulsed laser deposition (r-PLD) under the argon–oxygen (Ar|O{sub 2}) ambient at 573 K. Undoped and Carbon (C) doped epitaxial ZnO thin-film layer formation is revealed by the accelerator based ion-beam analysis (IBA) technique of resonant Rutherford backscattering spectrometry (RRBS), glancing-incidence X-ray diffraction (GIXRD) pattern, micro-Raman spectroscopy (μ-RS) and field-emission (F-E) studies. The RRBS and GIXRD results show the deposition of epitaxial thin-films containing C into ZnO. The μ-RS technique is a standard nondestructive tool (NDT) for the characterization of crystalline, nano-crystalline, and amorphous carbons (a-C). As grown ZnO and C-doped ZnO thin-films μ-RS result reveal the doping effect of C-impurities that appear in the form of DLC evident from Raman peaks at 1357 and 1575 cm{sup −1} along with a wurtzite structure peak at 438 cm{sup −1} with E{sub 2}(h) phonon of ZnO. The electron transport F-E result shows the hybrid thin-films has high conductivity than the un-doped film. Fabricated hybrid nanostructured thin-films materials could be very useful for the emerging applications of micro-nano dosimetry. - Highlights: • Observation of hybrid nanostructured diamond-like carbon (DLC) on ZnO epitaxial thin-films at 573 K. • Carbon doped epitaxial ZnO thin-film layer formation is revealed by RRBS, Micro-Raman. • Field-emission (F-E) study. • DLC formation evident from Raman peaks at 1357 and 1575 cm{sup −1} along with a wurtzite structure peak of ZnO. • The electron transport F-E result shows the hybrid thin-film has high conductivity than the undoped thin-film.

  9. Drying of thin colloidal films

    Science.gov (United States)

    Routh, Alexander F.

    2013-04-01

    When thin films of colloidal fluids are dried, a range of transitions are observed and the final film profile is found to depend on the processes that occur during the drying step. This article describes the drying process, initially concentrating on the various transitions. Particles are seen to initially consolidate at the edge of a drying droplet, the so-called coffee-ring effect. Flow is seen to be from the centre of the drop towards the edge and a front of close-packed particles passes horizontally across the film. Just behind the particle front the now solid film often displays cracks and finally the film is observed to de-wet. These various transitions are explained, with particular reference to the capillary pressure which forms in the solidified region of the film. The reasons for cracking in thin films is explored as well as various methods to minimize its effect. Methods to obtain stratified coatings through a single application are considered for a one-dimensional drying problem and this is then extended to two-dimensional films. Different evaporative models are described, including the physical reason for enhanced evaporation at the edge of droplets. The various scenarios when evaporation is found to be uniform across a drying film are then explained. Finally different experimental techniques for examining the drying step are mentioned and the article ends with suggested areas that warrant further study.

  10. Facile Synthesis of Novel Nanostructured MnO2Thin Films and Their Application in Supercapacitors

    Directory of Open Access Journals (Sweden)

    Xia H

    2009-01-01

    Full Text Available Abstract Nanostructured α-MnO2thin films with different morphologies are grown on the platinum substrates by a facile solution method without any assistance of template or surfactant. Microstructural characterization reveals that morphology evolution from dandelion-like spheres to nanoflakes of the as-grown MnO2is controlled by synthesis temperature. The capacitive behavior of the MnO2thin films with different morphologies are studied by cyclic voltammetry. The α-MnO2thin films composed of dandelion-like spheres exhibit high specific capacitance, good rate capability, and excellent long-term cycling stability.

  11. Grazing Incidence Small Angle X-Ray Scattering: Technique and Application to Discontinuous Thin Films

    Science.gov (United States)

    Levine, Joanne Rachel

    1990-01-01

    During the early stages of thin film growth in many thin film-substrate systems, adsorbate atoms form discrete three-dimensional islands, typically 10 A to 150 A in size. In order to study these islands, surface sensitive small angle x-ray scattering has been done for the first time by using a grazing incidence geometry (GISAXS). In this method, the substrate is aligned for total external reflection and the islands produce small angle scattering from the refracted beam crossing the substrate surface. The motivation for developing the GISAXS technique is the advantages GISAXS offers. First, because GISAXS works in reflection, there are no substrate thickness restrictions. Second, there is no sample conductivity requirement. Third, there are no x-ray beam induced sample changes. Finally, the x-ray beam samples all of the islands in the beam path simultaneously. In order to examine thin films in situ with GISAXS, an ultra-high vacuum chamber has been built which can be attached to a rotating anode or synchrotron x-ray source. This chamber is equipped with a pair of beryllium windows, a metal evaporator, a sample heater, and a precision rotary sample holder feedthrough. The GISAXS technique was applied to a model system of gold islands on glass substrates. The glass provides high reflectivity and gold provides strong atomic number contrast. For as-deposited films from 5 A to 15 A in average thickness, average island sizes, heights, and preferred island spacings, and the island surface roughness were determined. From the results of low temperature (< 375^circK) post-deposition annealing experiments, a model was developed which explains the observed slow time-dependence of post-deposition island growth in terms of overlapping diffusion fields and mass transfer by island mobility. The activation energy for this process was determined to be 0.49 eV. These GISAXS results were supplemented with transmission electron micrographs of and grazing incidence wide angle x

  12. Fabrication and characterizations of thin film metallic glasses: Antibacterial property and durability study for medical application

    Energy Technology Data Exchange (ETDEWEB)

    Chu, Jinn P., E-mail: jpchu@mail.ntust.edu.tw [Dept. of Materials Science and Engineering, National Taiwan University of Science and Technology, Taipei 10607, Taiwan (China); Liu, Tz-Yah; Li, Chia-Lin; Wang, Chen-Hao [Dept. of Materials Science and Engineering, National Taiwan University of Science and Technology, Taipei 10607, Taiwan (China); Jang, Jason S.C. [Dept. of Mechanical Engineering, National Taiwan Central University, Jhongli 32001, Taiwan (China); Chen, Ming-Jen; Chang, Shih-Hsin; Huang, Wen-Chien [Mackay Memorial Hospital, Taipei 10449, Taiwan (China)

    2014-06-30

    Metallic glasses with the disordered atomic structure have unique properties of high strength, high toughness, good corrosion and abrasion resistances. These materials are thus potentially useful for medical application. In this work, we evaluate the antibacterial property and durability of materials sputter-coated with Zr-based (Zr{sub 53}Cu{sub 33}Al{sub 9}Ta{sub 5}) and Cu-based (Cu{sub 48}Zr{sub 42}Ti{sub 4}Al{sub 6}) thin film metallic glasses (TFMGs). Good adhesive coating of Zr-based TFMG on the dermatome gives rise to blade sharpness improvement of ∼ 27%, substantial surface roughness reduction of ∼ 66% and smoother incised wound on the pig skin. As compared to 48.8° on the bare Si wafer, the water contact angles of 119.5° and 106.6° for Zr- and Cu-based TFMGs, respectively, reveal the hydrophobic characteristic of the coated surfaces. The bacterial adhesion of Escherichia coli and Staphylococcus aureus to both Zr- and Cu-based TFMGs is hindered to different extents. - Highlights: • Thin film metallic glass (TFMG) coatings are evaluated for medical application. • Good adhesive TFMG on the dermatome yields blade sharpness improvement of ∼ 27%. • A reduction of ∼ 66% in surface roughness is observed after coating with TFMG. • Water contact angle measurement reveals the hydrophobic characteristic for TFMGs. • Bacterial adhesion of E. coli and S. aureus to TFMGs is hindered.

  13. ZnO thin films and nanostructures for emerging optoelectronic applications

    Science.gov (United States)

    Rogers, D. J.; Teherani, F. H.; Sandana, V. E.; Razeghi, M.

    2010-02-01

    ZnO-based thin films and nanostructures grown by PLD for various emerging optoelectronic applications. AZO thin films are currently displacing ITO for many TCO applications due to recent improvements in attainable AZO conductivity combined with processing, cost and toxicity advantages. Advances in the channel mobilities and Id on/off ratios in ZnO-based TTFTs have opened up the potential for use as a replacement for a-Si in AM-OLED and AM-LCD screens. Angular-dependent specular reflection measurements of self-forming, moth-eye-like, nanostructure arrays grown by PLD were seen to have growth of InGaN-based solar cells on cheap substrates. The green gap in InGaN-based LEDs was combated by substituting low Ts PLD n-ZnO for MOCVD n-GaN in inverted hybrid heterojunctions. This approach maintained the integrity of the InGaN MQWs and gave LEDs with green emission at just over 510 nm. Hybrid n-ZnO/p-GaN heterojunctions were also seen to have the potential for UV (375 nm) EL, characteristic of ZnO NBE emission. This suggests that there was significant hole injection into the ZnO and that such LEDs could profit from the relatively high exciton binding energy of ZnO.

  14. Thin film superfluid optomechanics

    CERN Document Server

    Baker, Christopher G; McAuslan, David L; Sachkou, Yauhen; He, Xin; Bowen, Warwick P

    2016-01-01

    Excitations in superfluid helium represent attractive mechanical degrees of freedom for cavity optomechanics schemes. Here we numerically and analytically investigate the properties of optomechanical resonators formed by thin films of superfluid $^4$He covering micrometer-scale whispering gallery mode cavities. We predict that through proper optimization of the interaction between film and optical field, large optomechanical coupling rates $g_0>2\\pi \\times 100$ kHz and single photon cooperativities $C_0>10$ are achievable. Our analytical model reveals the unconventional behaviour of these thin films, such as thicker and heavier films exhibiting smaller effective mass and larger zero point motion. The optomechanical system outlined here provides access to unusual regimes such as $g_0>\\Omega_M$ and opens the prospect of laser cooling a liquid into its quantum ground state.

  15. Thin film ceramic thermocouples

    Science.gov (United States)

    Gregory, Otto (Inventor); Fralick, Gustave (Inventor); Wrbanek, John (Inventor); You, Tao (Inventor)

    2011-01-01

    A thin film ceramic thermocouple (10) having two ceramic thermocouple (12, 14) that are in contact with each other in at least on point to form a junction, and wherein each element was prepared in a different oxygen/nitrogen/argon plasma. Since each element is prepared under different plasma conditions, they have different electrical conductivity and different charge carrier concentration. The thin film thermocouple (10) can be transparent. A versatile ceramic sensor system having an RTD heat flux sensor can be combined with a thermocouple and a strain sensor to yield a multifunctional ceramic sensor array. The transparent ceramic temperature sensor that could ultimately be used for calibration of optical sensors.

  16. Biomimetic thin film deposition

    Science.gov (United States)

    Rieke, P. C.; Campbell, A. A.; Tarasevich, B. J.; Fryxell, G. E.; Bentjen, S. B.

    1991-04-01

    Surfaces derivatized with organic functional groups were used to promote the deposition of thin films of inorganic minerals. These derivatized surfaces were designed to mimic the nucleation proteins that control mineral deposition during formation of bone, shell, and other hard tissues in living organisms. By the use of derivatized substrates control was obtained over the phase of mineral deposited, the orientation of the crystal lattice and the location of deposition. These features are of considerable importance in many technically important thin films, coatings, and composite materials. Methods of derivatizing surfaces are considered and examples of controlled mineral deposition are presented.

  17. Multifunctional nature of UV-irradiated nanocrystalline anatase thin films for biomedical applications.

    Science.gov (United States)

    Rupp, F; Haupt, M; Klostermann, H; Kim, H-S; Eichler, M; Peetsch, A; Scheideler, L; Doering, C; Oehr, C; Wendel, H P; Sinn, S; Decker, E; von Ohle, C; Geis-Gerstorfer, J

    2010-12-01

    Anatase is known to decompose organic material by photocatalysis and to enhance surface wettability once irradiated by ultraviolet (UV) light. In this study, pulse magnetron-sputtered anatase thin films were investigated for their suitability with respect to specific biomedical applications, namely superhydrophilic and biofilm degrading implant surfaces. UV-induced hydrophilicity was quantified by static and dynamic contact angle analysis. Photocatalytic protein decomposition was analyzed by quartz crystal microbalance with dissipation. The surfaces were characterized by X-ray diffraction, atomic force microscopy, scanning electron microscopy and X-ray photoelectron spectroscopy. The radical formation on anatase, responsible for photocatalytic effects, was analyzed by electron spin resonance spectroscopy. Results have shown that the nanocrystalline anatase films, in contrast to reference titanium surfaces, were sensitive to UV irradiation and showed rapid switching towards superhydrophilicity. The observed decrease in carbon adsorbents and the increase in the fraction of surface hydroxyl groups upon UV irradiation might contribute to this hydrophilic behavior. UV irradiation of anatase pre-conditioned with albumin protein layers induces the photocatalytic decomposition of these model biofilms. The observed degradation is mainly caused by hydroxyl radicals. It is concluded that nanocrystalline anatase films offer different functions at implant interfaces, e.g. bedside hydrophilization of anatase-coated implants for improved osseointegration or the in situ decomposition of conditioning films forming the basal layer of biofilms in the oral cavity.

  18. Nanostructured Thin Film Synthesis by Aerosol Chemical Vapor Deposition for Energy Storage Applications

    Science.gov (United States)

    Chadha, Tandeep S.

    Renewable energy sources offer a viable solution to the growing energy demand while mitigating concerns for greenhouse gas emissions and climate change. This has led to a tremendous momentum towards solar and wind-based energy harvesting technologies driving efficiencies higher and costs lower. However, the intermittent nature of these energy sources necessitates energy storage technologies, which remain the Achilles heel in meeting the renewable energy goals. This dissertation focusses on two approaches for addressing the needs of energy storage: first, targeting direct solar to fuel conversion via photoelectrochemical water-splitting and second, improving the performance of current rechargeable batteries by developing new electrode architectures and synthesis processes. The aerosol chemical vapor deposition (ACVD) process has emerged as a promising single-step approach for nanostructured thin film synthesis directly on substrates. The relationship between the morphology and the operating parameters in the process is complex. In this work, a simulation based approach has been developed to understand the relationship and acquire the ability of predicting the morphology. These controlled nanostructured morphologies of TiO2 , compounded with gold nanoparticles of various shapes, are used for solar water-splitting applications. Tuning of light absorption in the visible-light range along with reduced electron-hole recombination in the composite structures has been demonstrated. The ACVD process is further extended to a novel single-step synthesis of nanostructured TiO2 electrodes directly on the current collector for applications as anodes in lithium-ion batteries, mainly for electric vehicles and hybrid electric vehicles. The effect of morphology of the nanostructures has been investigated via experimental studies and electrochemical transport modelling. Results demonstrate the exceptional performance of the single crystal one-dimensional nanostructures over granular

  19. L10-Ordered Thin Films with High Perpendicular Magnetic Anisotropy for STT-MRAM Applications

    Science.gov (United States)

    Huang, Efrem Yuan-Fu

    The objective of the research conducted herein was to develop L10-ordered materials and thin film stack structures with high perpendicular magnetic anisotropy (PMA) for spin-transfertorque magnetoresistive random access memory (STT-MRAM) applications. A systematic approach was taken in this dissertation, culminating in exchange coupled L1 0-FePt and L10- MnAl heterogeneous structures showing great promise for developing perpendicular magnetic tunnel junctions (pMTJs) with both high thermal stability and low critical switching current. First, using MgO underlayers on Si substrates, sputtered MnAl films were systematically optimized, ultimately producing a Si substrate/MgO (20 nm)/MnAl (30)/Ta (5) film stack with a high degree of ordering and large PMA. Next, noting the incompatibility of insulating MgO underlayers with industrial-scale CMOS processes, attention was turned to using conductive underlayers. TiN was found to excel at promoting growth of L10-MnAl, with optimized films showing improved magnetic properties over those fabricated on MgO underlayers. The use of different post-annealing processes was then studied as an alternative to in situ annealing. Rapid thermal annealing (RTA) was found to produce PMA in films at lower annealing temperatures than tube furnace annealing, but tube furnace annealing produced films with higher maximum PMA than RTA. While annealed samples had lower surface roughness than those ordered by high in situ deposition temperatures, relying solely on annealing to achieve L10-ordering resulted drastically reduced PMA. Finally, heterogeneous L10-ordered FePt/MgO/MnAl film stacks were explored for pMTJs. Film stacks with MgO barrier layers thinner than 2 nm showed significant interdiffusion between the FePt and MnAl, while film stacks with thicker MgO barrier layers exhibited good ordering and high PMA in both the FePt and MnAl films. It is believed that this limitation is caused by the roughness of the underlying FePt, which was thicker

  20. Structure-property relationships in the design, assembly and applications of polyelectrolyte multilayer thin films

    Science.gov (United States)

    Rmaile, Hassan H.

    Ultrathin films consisting of an alternating sequence of positively and negatively charged polyelectrolytes have been prepared by means of the electrostatic layer-by-layer sequential assembly technique. To augment their typical applications in the water treatment, personal care as well as the pulp and paper industry, the structure and the design of these polyelectrolytes were tailored synthetically to satisfy the requirements of different types of applications. Some were used for surface modifications, hydrophobic and hydrophilic coatings, corrosion protection, conducting and biocompatible surfaces. Others were found to be very efficient for membrane and chromatographic applications. The ease with which these multilayer coatings can be constructed, their robustness and stability make them very good candidates for industrial applications. The dissertation focuses mainly on the structure-property relationships of these polyelectrolytes and their corresponding thin films. Various polyelectrolytes were synthesized or modified in a strategic approach and gave novel and promising properties. Some of them exhibited permeabilities that were higher than any membranes reported in the literature. Also, some are potentially very useful for designing drug delivery systems such as tablets or encapsulations since they were shown to control the permeability of sample drugs and vitamins very efficiently based on their sensitivity to pH changes. Other synthesized polyelectrolytes proved to be very effective in preventing protein adsorption or promoting cell growth and differentiation. Some systems were very useful as robust stationary phases for simple chiral separations in capillary electrochromatography. Along with modifications and improvements, the approach might one day be applied commercially for chiral separations using high performance liquid chromatography and replace currently used stationary phases. Last but not least, the potential for these polyelectrolytes and their

  1. Influence of thickness on physical properties of vacuum evaporated polycrystalline CdTe thin films for solar cell applications

    Science.gov (United States)

    Chander, Subhash; Dhaka, M. S.

    2016-02-01

    This paper presents the influence of thickness on physical properties of polycrystalline CdTe thin films. The thin films of thickness 450 nm, 650 nm and 850 nm were deposited employing thermal vacuum evaporation technique on glass and indium tin oxide (ITO) coated glass substrates. The physical properties of these as-grown thin films were investigated employing the X-ray diffraction (XRD), source meter, UV-Vis spectrophotometer, scanning electron microscopy (SEM) coupled with energy dispersive spectroscopy (EDS). The structural analysis reveals that the films have zinc-blende cubic structure and polycrystalline in nature with preferred orientation (111). The structural parameters like lattice constant, interplanar spacing, grain size, strain, dislocation density and number of crystallites per unit area are calculated. The average grain size and optical band gap are found in the range 15.16-21.22 nm and 1.44-1.63 eV respectively and observed to decrease with thickness. The current-voltage characteristics show that the electrical conductivity is observed to decrease with thickness. The surface morphology shows that films are free from crystal defects like pin holes and voids as well as homogeneous and uniform. The EDS patterns show the presence of cadmium and tellurium elements in the as grown films. The experimental results reveal that the film thickness plays significant role on the physical properties of as-grown CdTe thin films and higher thickness may be used as absorber layer to solar cells applications.

  2. TiO(2)/LiCl-based nanostructured thin film for humidity sensor applications.

    Science.gov (United States)

    Buvailo, Andrii I; Xing, Yangjun; Hines, Jacqueline; Dollahon, Norman; Borguet, Eric

    2011-02-01

    A simple and straightforward method of depositing nanostructured thin films, based on LiCl-doped TiO(2), on glass and LiNbO(3) sensor substrates is demonstrated. A spin-coating technique is employed to transfer a polymer-assisted precursor solution onto substrate surfaces, followed by annealing at 520°C to remove organic components and drive nanostructure formation. The sensor material obtained consists of coin-shaped nanoparticles several hundred nanometers in diameter and less than 50 nm thick. The average thickness of the film was estimated by atomic force microscopy (AFM) to be 140 nm. Humidity sensing properties of the nanostructured material and sensor response times were studied using conductometric and surface acoustic wave (SAW) sensor techniques, revealing reversible signals with good reproducibility and fast response times of about 0.75 s. The applicability of this nanostructured film for construction of rapid humidity sensors was demonstrated. Compared with known complex and expensive methods of synthesizing sophisticated nanostructures for sensor applications, such as physical vapor deposition (PVD) and chemical vapor deposition (CVD), this work presents a relatively simple and inexpensive technique to produce SAW humidity sensor devices with competitive performance characteristics.

  3. Synthesis of polypyrrole thin film by SILAR method for supercapacitor application

    Science.gov (United States)

    Patil, B. H.; Shinde, S. S.; Lokhande, C. D.

    2013-06-01

    In the present work, polypyrrole (PPY) thin films were synthesized by simple and inexpensive successive ionic layer adsorption and reaction (SILAR) method using ammonium peroxidisulphate as an oxidant. The prepared PPY thin films were characterized using UV-VIS, SEM and cyclic voltammetry studies. From the UV-VIS spectrum optical band gap of 1.9 eV was observed. The SEM reveals the nanostructured morphology of PPY thin film. The specific capacitance (SC) of the PPY electrode was calculated using cyclic voltammetry technique. A high specific capacitance of 736 Fg-1 was obtained within the potential range of -0.4 to +0.6 V/SCE in 1M H2SO4 electrolyte. Hence, the PPY thin film is found to be suitable electrode material for redox supercapacitor.

  4. ZnO Thin Films Deposited on Textile Material Substrates for Biomedical Applications

    Science.gov (United States)

    Duta, L.; Popescu, A. C.; Dorcioman, G.; Mihailescu, I. N.; Stan, G. E.; Zgura, I.; Enculescu, I.; Dumitrescu, I.

    We report on the coating with ZnO adherent thin films of cotton woven fabrics by Pulsed laser deposition technique in order to obtain innovative textile materials, presenting protective effects against UV radiations and antifungal action.

  5. NMR characterization of thin films

    Science.gov (United States)

    Gerald, II, Rex E.; Klingler, Robert J.; Rathke, Jerome W.; Diaz, Rocio; Vukovic, Lela

    2008-11-25

    A method, apparatus, and system for characterizing thin film materials. The method, apparatus, and system includes a container for receiving a starting material, applying a gravitational force, a magnetic force, and an electric force or combinations thereof to at least the starting material, forming a thin film material, sensing an NMR signal from the thin film material and analyzing the NMR signal to characterize the thin film of material.

  6. TOF-SIMS analysis: Application to ultra-thin AWA film on magnetic head

    Institute of Scientific and Technical Information of China (English)

    2001-01-01

    F-containing polymer was coated on the magnetic head of hard disc drive (HDD) as theultra-thin (<20(?)) film of anti-wetting agent (AWA). A static TOF-SIMS method has been applied tomeasuring the thickness and coating uniformity of the ultra-thin film. TOF- SIMS is also used tostudy the micro-tribology and transfer of lubricant between the magnetic head and media interface.

  7. Aluminum nitride thin film based acoustic wave sensors for biosensing applications

    Science.gov (United States)

    Xu, Jianzeng

    In recent years, SAW devices have drawn enormous interest from the analytical assay and sensing business, especially in the biosensing area where highly sensitive, cost efficient and miniaturized sensors are in urgent needs. This dissertation focuses on the development of AIN thin film based SAW devices suitable for biosensing applications. AIN thin films have been synthesized on different orientations of sapphire substrates by a plasma source molecular beam epitaxy system. Surface and structural characterization techniques have been applied to investigate the film quality and the results show that high quality c-plane AIN was epitaxially grown on both c-plane and a-plane sapphire substrates. Complete process flows have been developed for the fabrication of SAW delay line and resonator devices. Important electrical parameters such as the insertion loss, bandwidth, and impedance have been measured to assist the design optimization and derivation the phase velocity, electromechanical coupling coefficient, and temperature coefficient of frequency. On both c-plane and a-plane sapphire substrates, the SAW phase velocities (˜5700 m/s) and electromechanical coupling coefficients (˜0.3%) have been thoroughly mapped out with respect to the propagation direction and film thickness to wavelength ratio. The data are of practical importance for designing AIN-based SAW devices. A higher velocity (>6000 m/s) shear horizontal SAW mode has been discovered only at isolated propagating directions. This mode is especially suitable for aqueous biosensing due to its weak energy coupling to liquid. Much stronger response of the SH-SAW mode has been detected on the c-plane AIN on a-plane sapphire structure than on the c-plane AIN on c-plane sapphire structure, which could be attributed to large anisotropy in a-plane sapphire substrate. Linear frequency-temperature relationship has also been observed for both modes. We further quantify the mass sensitivity of the SAW and SH-SAW by

  8. Structural and morphological properties of metallic thin films grown by pulsed laser deposition for photocathode application

    Science.gov (United States)

    Lorusso, A.; Gontad, F.; Caricato, A. P.; Chiadroni, E.; Broitman, E.; Perrone, A.

    2016-03-01

    In this work yttrium and lead thin films have been deposited by pulsed laser deposition technique and characterized by ex situ different diagnostic methods. All the films were adherent to the substrates and revealed a polycrystalline structure. Y films were uniform with a very low roughness and droplet density, while Pb thin films were characterized by a grain morphology with a relatively high roughness and droplet density. Such metallic materials are studied because they are proposed as a good alternative to copper and niobium photocathodes which are generally used in radiofrequency and superconducting radiofrequency guns, respectively. The photoemission performances of the photocathodes based on Y and Pb thin films have been also studied and discussed.

  9. Zapping thin film transistors

    NARCIS (Netherlands)

    Golo-Tosic, N.; Kuper, F.G.; Mouthaan, A.J.

    2002-01-01

    It was expected that hydrogenated amorphous silicon thin film transistors (alpha-Si:H TFTs) behave similarly to crystalline silicon transistors under electrostatic discharge (ESD) stress. It will be disproved in this paper. This knowledge is necessary in the design of the transistors used in a ESD

  10. Research on the Piezoelectric Properties of AlN Thin Films for MEMS Applications

    Directory of Open Access Journals (Sweden)

    Meng Zhang

    2015-09-01

    Full Text Available In this paper, the piezoelectric coefficient d33 of AlN thin films for MEMS applications was studied by the piezoresponse force microscopy (PFM measurement and finite element method (FEM simulation. Both the sample without a top electrode and another with a top electrode were measured by PFM to characterize the piezoelectric property effectively. To obtain the numerical solution, an equivalent model of the PFM measurement system was established based on theoretical analysis. The simulation results for two samples revealed the effective measurement value d33-test should be smaller than the intrinsic value d33 due to the clamping effect of the substrate and non-ideal electric field distribution. Their influences to the measurement results were studied systematically. By comparing the experimental results with the simulation results, an experimental model linking the actual piezoelectric coefficient d33 with the measurement results d33-test was given under this testing configuration. A novel and effective approach was presented to eliminate the influences of substrate clamping and non-ideal electric field distribution and extract the actual value d33 of AlN thin films.

  11. Electron beam deposition and characterization of thin film Ti-Ni for shape memory applications

    Institute of Scientific and Technical Information of China (English)

    NOH Hae-Yong; JEE Kwang-Koo; LEE Kyu-Hwan; LEE Young-Kook

    2006-01-01

    Thin film of Ti-Ni alloy has a potential to perform the microactuation functions required in the microelectromechanical system (MEMS).It is essential, however, to have good uniformity in both chemical composition and thickness to realize its full potential as an active component of MEMS devices.Electron beam evaporation technique was employed in this study to fabricate the thin films of Ti-Ni alloy on different substrates.The targets used for the evaporation were first prepared by electron beam melting.The uniformity of composition and microstructure of the thin films were characterized by electron probe microanalysis (EPMA), Auger electron spectroscopy (AES), X-ray diffraction (XRD), scanning electron microscopy (SEM), atomic force microscopy (AFM) and transmission electron microscopy (TEM).The mechanical property of the thin films was evaluated by the nano-indentation test.The martensitic transformation temperature was measured by differential scanning calorimetry (DSC).It is confirmed that the chemical composition of deposited thin films is identical to that of the target materials.Furthermore, results from depth profiling of the chemical composition variation reveal that the electron beam evaporation process yields better compositional homogeneity than other conventional methods such as sputtering and thermal evaporation.Microstructural observation by TEM shows that nanometer size precipitates are preferentially distributed along the grain boundaries of a few micron size grains.The hardness and elastic modulus of thin films decreases with an increase in Ti contents.

  12. Characteristics of ITO films with oxygen plasma treatment for thin film solar cell applications

    Energy Technology Data Exchange (ETDEWEB)

    Park, Yong Seob [Department of Photoelectronics Information, Chosun College of Science and Technology, Gwangju (Korea, Republic of); Kim, Eungkwon [Digital Broadcasting Examination, Korean Intellectual Property Office, Daejeon, Suwon 440-746 (Korea, Republic of); Hong, Byungyou [School of Electronic and Electrical Engineering, Sungkyunkwan University, Cheoncheon-dong, 300, Jangan-gu, Suwon 440-746 (Korea, Republic of); Lee, Jaehyoeng, E-mail: jaehyeong@skku.edu [School of Electronic and Electrical Engineering, Sungkyunkwan University, Cheoncheon-dong, 300, Jangan-gu, Suwon 440-746 (Korea, Republic of)

    2013-12-15

    Graphical abstract: The effect of O{sub 2} plasma treatment on the surface and the work function of ITO films. - Highlights: • ITO films were prepared on the glass substrate by RF magnetron sputtering method. • Effects of O{sub 2} plasma treatment on the properties of ITO films were investigated. • The work function of ITO film was changed from 4.67 to 5.66 eV by plasma treatment. - Abstract: The influence of oxygen plasma treatment on the electro-optical and structural properties of indium-tin-oxide films deposited by radio frequency magnetron sputtering method were investigated. The films were exposed at different O{sub 2} plasma powers and for various durations by using the plasma enhanced chemical vapor deposition (PECVD) system. The resistivity of the ITO films was almost constant, regardless of the plasma treatment conditions. Although the optical transmittance of ITO films was little changed by the plasma power, the prolonged treatment slightly increased the transmittance. The work function of ITO film was changed from 4.67 eV to 5.66 eV at the plasma treatment conditions of 300 W and 60 min.

  13. Shielding superconductors with thin films

    CERN Document Server

    Posen, Sam; Catelani, Gianluigi; Liepe, Matthias U; Sethna, James P

    2015-01-01

    Determining the optimal arrangement of superconducting layers to withstand large amplitude AC magnetic fields is important for certain applications such as superconducting radiofrequency cavities. In this paper, we evaluate the shielding potential of the superconducting film/insulating film/superconductor (SIS') structure, a configuration that could provide benefits in screening large AC magnetic fields. After establishing that for high frequency magnetic fields, flux penetration must be avoided, the superheating field of the structure is calculated in the London limit both numerically and, for thin films, analytically. For intermediate film thicknesses and realistic material parameters we also solve numerically the Ginzburg-Landau equations. It is shown that a small enhancement of the superheating field is possible, on the order of a few percent, for the SIS' structure relative to a bulk superconductor of the film material, if the materials and thicknesses are chosen appropriately.

  14. Study of composite thin films for applications in high density data storage

    Science.gov (United States)

    Yuan, Hua

    ---oxide volume fraction and sputtering pressure. The latter affects grain size and grain segregation through surface-diffusion modification and the self-shadowing effect. The composite Ru + oxide interlayers were found to have various microstructures under various sputtering conditions. Four characteristic microstructure zones can be identified as a function of oxide volume fraction and sputtering pressure---"percolated" (A), "maze" (T), "granular" (B) and "embedded" (C), based on which, a new structural zone model (SZM) is established for composite thin films. The granular microstructure of zone B is of particular interest for recording media application. The grain size of interlayers is a strong function of pressure, oxide species and oxide volume fraction. Magnetic layers grown on top of these interlayers were found to be significantly affected by the interlayer microstructure. One-to-one grain epitaxial growth is very difficult to achieve when the grain size is too small. As a result, the magnetic properties of smaller grain size magnetic layers deteriorate due to poor growth. This presents a huge challenge to high areal density magnetic recording media. A novel approach of Ar-ion etched Ru seedlayer, which can improve epitaxy between interlayer and magnetic layer is proposed. This method produces interlayer thin films of: (1) smaller grain size and higher nucleation density due to both a rougher seedlayer surface and an oxide addition in the interlayer; (2) good (00.2) texture due to the growth on top of the low pressure deposited Ru seedlayer; (3) dome-shape grain morphology due to the high pressure deposition. Therefore, a significant Ru grain size reduction with enhanced granular morphology and improved grain-to-grain epitaxy with the magnetic layer was achieved. High resolution transmission electron microscopy (TEM) techniques, such as, electron energy loss spectroscopy (EELS), energy-filtered TEM (EFTEM), energy-dispersive X-ray spectroscopy (EDS) and mapping, and high

  15. Nanostructured thin films and coatings functional properties

    CERN Document Server

    Zhang, Sam

    2010-01-01

    The second volume in ""The Handbook of Nanostructured Thin Films and Coatings"" set, this book focuses on functional properties, including optical, electronic, and electrical properties, as well as related devices and applications. It explores the large-scale fabrication of functional thin films with nanoarchitecture via chemical routes, the fabrication and characterization of SiC nanostructured/nanocomposite films, and low-dimensional nanocomposite fabrication and applications. The book also presents the properties of sol-gel-derived nanostructured thin films as well as silicon nanocrystals e

  16. Ultrasonic Spray Pyrolysis Deposited Copper Sulphide Thin Films for Solar Cell Applications

    Directory of Open Access Journals (Sweden)

    Y. E. Firat

    2017-01-01

    Full Text Available Polycrystalline copper sulphide (CuxS thin films were grown by ultrasonic spray pyrolysis method using aqueous solutions of copper chloride and thiourea without any complexing agent at various substrate temperatures of 240, 280, and 320°C. The films were characterized for their structural, optical, and electrical properties by X-ray diffraction (XRD, scanning electron microscopy (SEM, energy dispersive analysis of X-rays (EDAX, atomic force microscopy (AFM, contact angle (CA, optical absorption, and current-voltage (I-V measurements. The XRD analysis showed that the films had single or mixed phase polycrystalline nature with a hexagonal covellite and cubic digenite structure. The crystalline phase of the films changed depending on the substrate temperature. The optical band gaps (Eg of thin films were 2.07 eV (CuS, 2.50 eV (Cu1.765S, and 2.28 eV (Cu1.765S–Cu2S. AFM results indicated that the films had spherical nanosized particles well adhered to the substrate. Contact angle measurements showed that the thin films had hydrophobic nature. Hall effect measurements of all the deposited CuxS thin films demonstrated them to be of p-type conductivity, and the current-voltage (I-V dark curves exhibited linear variation.

  17. Development of molecular precursors for deposition of indium sulphide thin film electrodes for photoelectrochemical applications.

    Science.gov (United States)

    Ehsan, Muhammad Ali; Peiris, T A Nirmal; Wijayantha, K G Upul; Olmstead, Marilyn M; Arifin, Zainudin; Mazhar, Muhammad; Lo, K M; McKee, Vickie

    2013-08-14

    Symmetrical and unsymmetrical dithiocarbamato pyridine solvated and non-solvated complexes of indium(III) with the general formula [In(S2CNRR')3]·n(py) [where py = pyridine; R,R' = Cy, n = 2 (1); R,R' = (i)Pr, n = 1.5 (2); NRR' = Pip, n = 0.5 (3) and R = Bz, R' = Me, n = 0 (4)] have been synthesized. The compositions, structures and properties of these complexes have been studied by means of microanalysis, IR and (1)H-NMR spectroscopy, X-ray single crystal and thermogravimetric (TG/DTG) analyses. The applicability of these complexes as single source precursors (SSPs) for the deposition of β-In2S3 thin films on fluorine-doped SnO2 (FTO) coated conducting glass substrates by aerosol-assisted chemical vapour deposition (AACVD) at temperatures of 300, 350 and 400 °C is studied. All films have been characterized by powder X-ray diffraction (PXRD) and energy dispersive X-ray analysis (EDX) for the detection of phase and stoichiometry of the deposit. Scanning electron microscopy (SEM) studies reveal that precursors (1)-(4), irrespective of different metal ligand design, generate comparable morphologies of β-In2S3 thin films at different temperatures. Direct band gap energies of 2.2 eV have been estimated from the UV-vis spectroscopy for the β-In2S3 films fabricated from precursors (1) and (4). The photoelectrochemical (PEC) properties of β-In2S3 were confirmed by recording the current-voltage plots under light and dark conditions. The plots showed anodic photocurrent densities of 1.25 and 0.65 mA cm(-2) at 0.23 V vs. Ag/AgCl for the β-In2S3 films made at 400 and 350 °C from the precursors (1) and (4), respectively. The photoelectrochemical performance indicates that the newly synthesised precursors are highly useful in fabricating β-In2S3 electrodes for solar energy harvesting and optoelectronic application.

  18. Transparent Al+3 doped MgO thin films for functional applications

    Science.gov (United States)

    Maiti, Payel; Sekhar Das, Pradip; Bhattacharya, Manjima; Mukherjee, Smita; Saha, Biswajit; Mullick, Awadesh Kumar; Mukhopadhyay, Anoop Kumar

    2017-08-01

    The present work reports the utilization of a relatively simple, cost effective sol-gel technique based route to synthesize highly transparent, spin coated 4.1 at% Al+3 doped MgO thin films on quartz substrates. The films were characterized by XRD, XPS, Raman spectroscopy, and SIMS techniques. The microstructures were characterized by FESEM and TEM while the nanomechanical properties were assessed by the nanoindentation technique. Finally the optical transmittance was measured by UV-vis technique. The x-ray diffraction (XRD) study suggests the crystal facet (2 0 0) of MgO lattice to be distorted after incorporation of Al+3 into MgO lattice. From FESEM the doped films were found to have a dense microstructure with a crystallite size of about 20 nm as revealed by the TEM studies. Nanoindentation measurements indicated drastic increase of elastic modulus for the Al+3 doped MgO thin films by ~73% compared to that of the pristine MgO thin films along with retaining the nanohardness at ~8 GPa. The transmittance of Al+3 doped MgO thin films in the visible range was significantly higher (~99%) than that of pristine MgO (~90%) thin films. The films also had a relatively higher refractive index of about 1.45 as evaluated from the optical properties. The enhanced transmittance as well as the improved elastic modulus of Al+3 doped MgO thin films suggest its promising candidature in magnetic memory devices and as buffer layers of solar cells.

  19. Fabrication of nanostructured Al-doped ZnO thin film for methane sensing applications

    Science.gov (United States)

    Shafura, A. K.; Sin, N. D. Md.; Azhar, N. E. I.; Saurdi, I.; Uzer, M.; Mamat, M. H.; Shuhaimi, A.; Alrokayan, Salman A. H.; Khan, Haseeb A.; Rusop, M.

    2016-07-01

    CH4 gas sensor was fabricated using spin-coating method of the nanostructured ZnO thin film. Effect of annealing temperature on the electrical and structural properties of the film was investigated. Dense nanostructured ZnO film are obtained at higher annealing temperature. The optimal condition of annealing temperature is 500°C which has conductivity and sensitivity value of 3.3 × 10-3 S/cm and 11.5%, respectively.

  20. Solution processed Cu2SnS3 thin films for visible and infrared photodetector applications

    Directory of Open Access Journals (Sweden)

    Sandra Dias

    2016-02-01

    Full Text Available The Cu2SnS3 thin films were deposited using an economic, solution processible, spin coating technique. The films were found to possess a tetragonal crystal structure using X-ray diffraction. The film morphology and the particle size were determined using scanning electron microscopy. The various planes in the crystal were observed using transmission electron microscopy. The optimum band gap of 1.23 eV and a high absorption coefficient of 104 cm−1 corroborate its application as a photoactive material. The visible and infrared (IR photo response was studied for various illumination intensities. The current increased by one order from a dark current of 0.31 μA to a current of 1.78 μA at 1.05 suns and 8.7 μA under 477.7 mW/cm2 IR illumination intensity, at 3 V applied bias. The responsivity, sensitivity, external quantum efficiency and specific detectivity were found to be 10.93 mA/W, 5.74, 2.47% and 3.47 × 1010 Jones respectively at 1.05 suns and 16.32 mA/W, 27.16, 2.53% and 5.10 × 1010 Jones respectively at 477.7 mW/cm2 IR illumination. The transient photoresponse was measured both for visible and IR illuminations.

  1. Laser-Scribed Photo-thermal Reduction of Graphene-Oxide for Thin Film Sensor Applications

    OpenAIRE

    Kazemzadeh, Rouzbeh

    2015-01-01

    In this thesis, a cost effective, simple and fast method of reduction of Graphene Oxide thin film is proposed. Graphene oxide is a non-conductive material intrinsically and one of the techniques to convert it to conductive material is using laser beam to remove oxygen groups from its surface, in other words, to reduce it. Laser parameters must be optimized for an effective and successful reduction. Thin film of non-conductive Graphene oxide is converted into conductive thin layer by fast lase...

  2. Laser beam diffraction at the edge of a film and application to thin film metrology.

    Science.gov (United States)

    Do, P A; Touaibia, M; Haché, A

    2013-08-20

    The thickness change of a film is measured optically using self-interference of a single laser beam incident at the edge of the film. Theory suggests that when a half-plane phase shift is applied to a Gaussian laser beam, interference fringes appear in the near and far field, in which position varies with the amount of phase shift. By measuring fringe pattern displacement, we demonstrate detection of thickness changes in chitosan films induced by temperature rises of a few degrees centigrade. With a laser at 543 nm, the minimum detectable thickness change is 0.8 nm in ideal conditions (quarter wave films), corresponding with a phase shift of 0.02 rad, and the minimum detectable film thickness is ∼30  nm. Potential use for surface temperature measurements is discussed.

  3. Structural, optical and electrical characterization of vacuum-evaporated nanocrystalline CdSe thin films for photosensor applications

    Energy Technology Data Exchange (ETDEWEB)

    Kumar, Vipin; Sharma, D.K.; Sharma, Kapil [Krishna Institute of Engineering and Technology, Department of Physics, Ghaziabad (India); Dwivedi, D.K. [M.M.M University of Technology, Department of Physics, Gorakhpur (India)

    2016-11-15

    II-VI nanocrystalline semiconductors offer a wide range of applications in electronics, optoelectronics and photonics. Thin films of CdSe were deposited onto ultra-clean glass substrates by vacuum evaporation method. The as-deposited films were annealed in vacuum at 350 K. The structural, elemental, morphological, optical and electrical investigations of annealed films were carried out. The X-ray diffraction pattern of the films shows that films were polycrystalline in nature having hexagonal structure with preferential orientation of grains along (002) plane. SEM image indicates that the films were uniform and well covered to the glass substrate. EDAX analysis confirms the stoichiometric composition of the film. Raman spectra were used to observe the characteristic vibrational modes of CdSe. The energy band gap of these films was obtained by absorption spectra. The films were found to have a direct type of transition of band gap occurring at 1.75 eV. The dark electrical conductivity and photoconductivity reveals that the films were semiconducting in nature indicating the suitability of these films for photosensor applications. The Hall effect measurement reveals that the films have n-type electrical conductivity. (orig.)

  4. Structural, optical and electrical characterization of vacuum-evaporated nanocrystalline CdSe thin films for photosensor applications

    Science.gov (United States)

    Kumar, Vipin; Sharma, D. K.; Sharma, Kapil; Dwivedi, D. K.

    2016-11-01

    II-VI nanocrystalline semiconductors offer a wide range of applications in electronics, optoelectronics and photonics. Thin films of CdSe were deposited onto ultra-clean glass substrates by vacuum evaporation method. The as-deposited films were annealed in vacuum at 350 K. The structural, elemental, morphological, optical and electrical investigations of annealed films were carried out. The X-ray diffraction pattern of the films shows that films were polycrystalline in nature having hexagonal structure with preferential orientation of grains along (002) plane. SEM image indicates that the films were uniform and well covered to the glass substrate. EDAX analysis confirms the stoichiometric composition of the film. Raman spectra were used to observe the characteristic vibrational modes of CdSe. The energy band gap of these films was obtained by absorption spectra. The films were found to have a direct type of transition of band gap occurring at 1.75 eV. The dark electrical conductivity and photoconductivity reveals that the films were semiconducting in nature indicating the suitability of these films for photosensor applications. The Hall effect measurement reveals that the films have n-type electrical conductivity.

  5. Deposition and Characterization of Al:ZnO Thin Films for Optoelectronic Applications

    Science.gov (United States)

    Pandey, R. K.; Mishra, Swati; Bajpai, P. K.

    2016-11-01

    Transparent aluminum-doped zinc oxide (Al:ZnO) thin films have been successfully synthesized on silicon substrates at room temperature using a sol-gel spin-coating method. The structural and optical properties and surface morphology of the synthesized films were characterized using x-ray diffraction (XRD) analysis, ultraviolet-visible (UV-Vis) spectroscopy, Fourier-transform infrared (FTIR) spectroscopy, micro-Raman spectroscopy, and atomic force microscopy (AFM). The prepared Al:ZnO retained the hexagonal wurtzite structure of ZnO. FTIR and Raman spectra clearly revealed a major peak at 437 cm-1, associated with the ZnO bond. UV-Vis spectra showed that the Al:ZnO films were transparent from the near-ultraviolet to near-infrared region. The effect of film thickness on the physical and optical properties of the Al:ZnO thin films for 2.0 at.% aluminum concentration was investigated. Measurements revealed that the film transparency, optical energy bandgap, Urbach energy, extinction coefficient, and porosity varied with the film thickness. The energy bandgap values for the prepared thin films increased in the range of 3.18 eV to 3.2 eV with increasing film thickness.

  6. The Influence of Platinum Dopant on the Characteristics of SnO2Thin Film for Gas Sensor Application

    Directory of Open Access Journals (Sweden)

    T. Sujitno

    2006-07-01

    Full Text Available Doping of platinum on tin dioxide (SnO2 thin film for gas sensor application has been carried out using ion implantation techniques. The SnO2 thin film has been deposited using dc sputtering method at the conditions; operating pressure 5x10-2 torr, anode-cathode voltage 2.0 kV, substrate temperature 2000C and deposition time one hour. While the Pt ion implantation process were carried out at energy 60 keV and ion doses were varied. From scanning electron microscope (SEM observation, it was found that SnO2:Pt thin film which was deposited by those parameters has a fine morphology with the grain size of thin film was in order of 0.7 – 1.0 μm and thickness 4.16 μm. From crystal structure analysis using XRD it was observed that the crystal planes of SnO2:Pt were (110, (101, (200, (211, (300, and (112 . From energy dispersive X-rays analysis (EDX coupled with SEM, it was found that the chemical composition of SnO2:Pt thin film were 66.12%-at O, 1.23 %-at Si, 0.12 %-at Pt and 32.53 %-at Sn. It was also found that the influence of platinum dopant on SnO2 thin film can reduce significantly the resistance of thin film and from response time and sensitivities measurement showed that for every dose variation for different tested gas has a different respons time and sensitivities (no a specific pattern

  7. [Spectral emissivity of thin films].

    Science.gov (United States)

    Zhong, D

    2001-02-01

    In this paper, the contribution of multiple reflections in thin film to the spectral emissivity of thin films of low absorption is discussed. The expression of emissivity of thin films derived here is related to the thin film thickness d and the optical constants n(lambda) and k(lambda). It is shown that in the special case d-->infinity the emissivity of thin films is equivalent to that of the bulk material. Realistic numerical and more precise general numerical results for the dependence of the emissivity on d, n(lambda) and k(lambda) are given.

  8. TiO 2 Thin Films Prepared via Adsorptive Self-Assembly for Self-Cleaning Applications

    KAUST Repository

    Xi, Baojuan

    2012-02-22

    Low-cost controllable solution-based processes for preparation of titanium oxide (TiO 2) thin films are highly desirable, because of many important applications of this oxide in catalytic decomposition of volatile organic compounds, advanced oxidation processes for wastewater and bactericidal treatments, self-cleaning window glass for green intelligent buildings, dye-sensitized solar cells, solid-state semiconductor metal-oxide solar cells, self-cleaning glass for photovoltaic devices, and general heterogeneous photocatalysis for fine chemicals etc. In this work, we develop a solution-based adsorptive self-assembly approach to fabricate anatase TiO 2 thin films on different glass substrates such as simple plane glass and patterned glass at variable compositions (normal soda lime glass or solar-grade borofloat glass). By tuning the number of process cycles (i.e., adsorption-then-heating) of TiO 2 colloidal suspension, we could facilely prepare large-area TiO 2 films at a desired thickness and with uniform crystallite morphology. Moreover, our as-prepared nanostructured TiO 2 thin films on glass substrates do not cause deterioration in optical transmission of glass; instead, they improve optical performance of commercial solar cells over a wide range of incident angles of light. Our as-prepared anatase TiO 2 thin films also display superhydrophilicity and excellent photocatalytic activity for self-cleaning application. For example, our investigation of photocatalytic degradation of methyl orange indicates that these thin films are indeed highly effective, in comparison to other commercial TiO 2 thin films under identical testing conditions. © 2012 American Chemical Society.

  9. TiO2 thin films prepared via adsorptive self-assembly for self-cleaning applications.

    Science.gov (United States)

    Xi, Baojuan; Verma, Lalit Kumar; Li, Jing; Bhatia, Charanjit Singh; Danner, Aaron James; Yang, Hyunsoo; Zeng, Hua Chun

    2012-02-01

    Low-cost controllable solution-based processes for preparation of titanium oxide (TiO(2)) thin films are highly desirable, because of many important applications of this oxide in catalytic decomposition of volatile organic compounds, advanced oxidation processes for wastewater and bactericidal treatments, self-cleaning window glass for green intelligent buildings, dye-sensitized solar cells, solid-state semiconductor metal-oxide solar cells, self-cleaning glass for photovoltaic devices, and general heterogeneous photocatalysis for fine chemicals etc. In this work, we develop a solution-based adsorptive self-assembly approach to fabricate anatase TiO(2) thin films on different glass substrates such as simple plane glass and patterned glass at variable compositions (normal soda lime glass or solar-grade borofloat glass). By tuning the number of process cycles (i.e., adsorption-then-heating) of TiO(2) colloidal suspension, we could facilely prepare large-area TiO(2) films at a desired thickness and with uniform crystallite morphology. Moreover, our as-prepared nanostructured TiO(2) thin films on glass substrates do not cause deterioration in optical transmission of glass; instead, they improve optical performance of commercial solar cells over a wide range of incident angles of light. Our as-prepared anatase TiO(2) thin films also display superhydrophilicity and excellent photocatalytic activity for self-cleaning application. For example, our investigation of photocatalytic degradation of methyl orange indicates that these thin films are indeed highly effective, in comparison to other commercial TiO(2) thin films under identical testing conditions.

  10. Thin liquid films dewetting and polymer flow

    CERN Document Server

    Blossey, Ralf

    2012-01-01

    This book is a treatise on the thermodynamic and dynamic properties of thin liquid films at solid surfaces and, in particular, their rupture instabilities. For the quantitative study of these phenomena, polymer thin films haven proven to be an invaluable experimental model system.   What is it that makes thin film instabilities special and interesting, warranting a whole book? There are several answers to this. Firstly, thin polymeric films have an important range of applications, and with the increase in the number of technologies available to produce and to study them, this range is likely to expand. An understanding of their instabilities is therefore of practical relevance for the design of such films.   Secondly, thin liquid films are an interdisciplinary research topic. Interdisciplinary research is surely not an end to itself, but in this case it leads to a fairly heterogeneous community of theoretical and experimental physicists, engineers, physical chemists, mathematicians and others working on the...

  11. A stochastic model of solid state thin film deposition: Application to chalcopyrite growth

    Directory of Open Access Journals (Sweden)

    Robert J. Lovelett

    2016-04-01

    Full Text Available Developing high fidelity quantitative models of solid state reaction systems can be challenging, especially in deposition systems where, in addition to the multiple competing processes occurring simultaneously, the solid interacts with its atmosphere. In this work, we develop a model for the growth of a thin solid film where species from the atmosphere adsorb, diffuse, and react with the film. The model is mesoscale and describes an entire film with thickness on the order of microns. Because it is stochastic, the model allows us to examine inhomogeneities and agglomerations that would be impossible to characterize with deterministic methods. We demonstrate the modeling approach with the example of chalcopyrite Cu(InGa(SeS2 thin film growth via precursor reaction, which is a common industrial method for fabricating thin film photovoltaic modules. The model is used to understand how and why through-film variation in the composition of Cu(InGa(SeS2 thin films arises and persists. We believe that the model will be valuable as an effective quantitative description of many other materials systems used in semiconductors, energy storage, and other fast-growing industries.

  12. Thin-Film Metamaterials called Sculptured Thin Films

    CERN Document Server

    Lakhtakia, Akhlesh

    2010-01-01

    Morphology and performance are conjointed attributes of metamaterials, of which sculptured thin films (STFs) are examples. STFs are assemblies of nanowires that can be fabricated from many different materials, typically via physical vapor deposition onto rotating substrates. The curvilinear--nanowire morphology of STFs is determined by the substrate motions during fabrication. The optical properties, especially, can be tailored by varying the morphology of STFs. In many cases prototype devices have been fabricated for various optical, thermal, chemical, and biological applications.

  13. Thin film superconductor magnetic bearings

    Science.gov (United States)

    Weinberger, Bernard R.

    1995-12-26

    A superconductor magnetic bearing includes a shaft (10) that is subject to a load (L) and rotatable around an axis of rotation, a magnet (12) mounted to the shaft, and a stator (14) in proximity to the shaft. The stator (14) has a superconductor thin film assembly (16) positioned to interact with the magnet (12) to produce a levitation force on the shaft (10) that supports the load (L). The thin film assembly (16) includes at least two superconductor thin films (18) and at least one substrate (20). Each thin film (18) is positioned on a substrate (20) and all the thin films are positioned such that an applied magnetic field from the magnet (12) passes through all the thin films. A similar bearing in which the thin film assembly (16) is mounted on the shaft (10) and the magnet (12) is part of the stator (14) also can be constructed.

  14. Properties of thin film thermoelectric materials: application to sensors using the Seebeck effect

    Energy Technology Data Exchange (ETDEWEB)

    Boyer, A.; Cisse, E. (CEM, Sciences et Techniques du Languedoc, 34 - Montpellier (France))

    1992-03-30

    The main thermoelectric properties, i.e. Seebeck coefficient {alpha}, electrical resistivity, {rho}, thermal conductivity K and the coefficient Z of the thermoelectric merit, are determined for narrow-gap V{sub 2}VI{sub 3} semiconductors and semimetals. Variations in {alpha}, K and {rho} depending on the thickness e of the thin film are also measured. The essential technical characteristics such as the sensitivity S{sub f} to flux, the time constant {tau} and the noise equivalent power of a wide-band radiation detector are modelled acording to the adapted thermal conductance eK. The most significant results concerning specific applications are described. Knowledge of these data is useful for the production of sensors based on the Seebeck effect, such as thermocouples, thermopiles, radiation detectors, hyperfrequency power sensors and electrical converters. (orig.).

  15. Electronic characterisation and computer modelling of thin film materials and devices for optoelectronic applications

    CERN Document Server

    Zollondz, J

    2001-01-01

    lock-in techniques. A comparison was made of the two-beam photogating experiment, with a single beam current-voltage measurement, which is also influenced by trapped space charge, as indicators of defect distributions. It was found that the photogating measurement is a more accurate indicator of the distribution of space charge, and hence defects, within a device. Application of the photogating effect in a colour detector is introduced and detector structure proposed. The simple structure and the thin film technique of a-Si:H deposition suggests the possibility of a low cost photodetector with high colour resolution. Double beam collection efficiency measurements have been carried out on hydrogenated amorphous silicon p-i-n devices. Apparent collection efficiencies higher than unity were observed, and explained by a process identified as photogating, in which a low intensity weakly absorbed probe beam modulates the photocurrent produced by a high intensity strongly absorbed bias beam. Computer simulations wer...

  16. Symplectic Exact Solution for Stokes Flow in the Thin Film Coating Applications

    Directory of Open Access Journals (Sweden)

    Yan Wang

    2014-01-01

    Full Text Available The symplectic analytical method is introduced to solve the problem of the stokes flow in the thin film coating applications. Based on the variational principle, the Lagrangian function of the stokes flow is established. By using the Legendre transformation, the dual variables of velocities and the Hamiltonian function are derived. Considering velocities and stresses as the basic variables, the equations of stokes flow problems are transformed into Hamiltonian system. The method of separation of variables and expansion of eigenfunctions are developed to solve the governing equations in Hamiltonian system, and the analytical solutions of the stokes flow are obtained. Several numerical simulations are carried out to verify the analytical solutions in the present study and discuss the effects of the driven lids of the square cavity on the dynamic behavior of the flow structure.

  17. A review of production methods of carbon nanotube and graphene thin films for electrothermal applications

    Science.gov (United States)

    Janas, D.; Koziol, K. K.

    2014-02-01

    Electrothermal materials transform electric energy into heat due to the Joule effect. To date, resistive wires made of heavy metal alloys have primarily been used as the heat source in many appliances surrounding us. Recent discoveries in the field of carbon nanostructures revealed that they can offer a spectrum of advantages over the traditional materials. We review the production methods of thin films composed of carbon nanotubes or graphene and depict how they can be used as conductive coatings for electrothermal applications. We screen all reports from the field up to now and highlight the features of designed nanoheaters. A particular focus is placed on the analysis of general findings of how to tune their electrothermal properties, why carbon nanostructure devices operate the way they do and in what aspects they are superior to the currently available materials on the market.

  18. Interfacial effects in oxide-polymer laminar composite thin film dielectrics for capacitor applications

    Science.gov (United States)

    Tewari, Pratyush

    Continuous increase in the density of active components on microelectronic chip/circuit board requires development of new capacitors with smaller size, weight and cost. Miniaturization in the size of capacitors demands development of high energy density dielectric materials, which are the core of parallel plate capacitors. Nano composite dielectrics comprising high polarizibility oxide fillers randomly dispersed in high breakdown strength polymer matrix are considered as a potential high energy density materials for capacitor applications. Large interfacial volume, generated due to introduction of nano fillers in polymer matrix, might have significant positive contribution towards energy storage in nano composites. However, percolation issues associated with nano fillers and generation of large interfacial volume in nano composites, where complex electric field distribution overlaps with interfacialy modified polymer lead to unclear understanding of polymer-filler interfacial interactions in nano composites. Hence, in the current work laminar composite double layered dielectric structures, which provide relatively simple local field distribution at the interface and ideal series connectivity between oxide and polymer, are used as a model system to understand polymer-oxide interfacial interactions. Interfacial effects are reported for both low permittivity (SiO2-Parylene C) and medium permittivity (ZrO2-P(VDF-TrFE)) laminar composite dielectrics. Pyrolytic vapor decomposition polymerization process was used to grow Parylene C thin films on gold and thermally grown SiO2 surfaces. Enhancement in crystallite dimension with post deposition annealing treatments of Parylene C thin films was found to reduce dielectric loss tangent and hence enhance its dielectric properties. Electric field and temperature dependant leakage current analysis suggested hopping as dominant conduction mechanism in Parylene C thin films. Parylene C thin films in laminar composites showed

  19. The preparation, processing and properties of thin and thick films for microelectric applications

    Science.gov (United States)

    Bagley, B. G.; Greene, L. H.; Barboux, P.; Tarascon, J. M.; Venkatesan, T.

    High-Tc thin and thick films of YBa2Cu2O(7-y) and thick films based on the Bi-Sr-Ca-Cu and Tl-Ba-Ca-Cu systems were prepared and their properties investigated. It was found that YB2Cu3O(7-y) thin films prepared at temperatures up to 400 C, have amorphous structures, and those prepared in the 400-650 C region exhibit polyphase microstructure, due to the rapid crystallization kinetics of the competing phases. Methods for bipassing the 'forbidden' temperature region are described. Preparation of YBa2Cu2O(7-y) thick films was achieved via an aqueous sol-gel technique. Bi-Sr-Ca-Cu- and Tl-Ba-Ca-Cu-based thick films were prepared via the decomposition of glycerol-based solutions containing nitrates of the elements.

  20. A novel chemical synthesis and characterization of Mn 3O 4 thin films for supercapacitor application

    Science.gov (United States)

    Dubal, D. P.; Dhawale, D. S.; Salunkhe, R. R.; Pawar, S. M.; Lokhande, C. D.

    2010-05-01

    Mn 3O 4 thin films have been prepared by novel chemical successive ionic layer adsorption and reaction (SILAR) method. Further these films were characterized for their structural, morphological and optical properties by means of X-ray diffraction (XRD), Fourier transform infrared spectrum (FTIR), field emission scanning electron microscopy (FESEM), wettability test and optical absorption studies. The XRD pattern showed that the Mn 3O 4 films exhibit tetragonal hausmannite structure. Formation of manganese oxide compound was confirmed from FTIR studies. The optical absorption showed existence of direct optical band gap of energy 2.30 eV. Mn 3O 4 film surface showed hydrophilic nature with water contact angle of 55°. The supercapacitive properties of Mn 3O 4 thin film investigated in 1 M Na 2SO 4 electrolyte showed maximum supercapacitance of 314 F g -1 at scan rate 5 mV s -1.

  1. Layered TiO2: PVK nano-composite thin films for photovoltaic applications. TiO2: PVK nano-composite thin films.

    Science.gov (United States)

    Kaune, G; Wang, W; Metwalli, E; Ruderer, M; Rossner, R; Roth, S V; Müller-Buschbaum, P

    2008-01-01

    The influence of the solvent used for spin-coating on the homogeneity of poly(N-vinylcarbazole) (PVK) films is investigated. Homogenous films are obtained only by the use of toluene, solution in tetrahydrofuran (THF) and chloroform results in radially oriented inhomogeneities and films prepared by use of N-methylpyrrolidone and dimethylacetamide show particle formation during spin-coating. Layered nano-composite thin films are prepared by spin-coating a PVK film on top of a nano-structured titanium dioxide ( TiO2) layer. The TiO2 thin films are prepared by a sol-gel process using an amphiphilic copolymer as structure-directing agent. Structural characterisation of the TiO2 :PVK nano-composite films is done by field emission scanning electron microscopy (FESEM) and grazing-incidence small-angle scattering (GISAXS). Bare TiO2 films are probed for comparison. Light is basically only absorbed in the ultraviolet regime and absorption slightly increases upon addition of PVK, which makes the layered TiO2 :PVK nano-composite thin films good candidates for UV photovoltaic devices. Furthermore, absorption remains stable over a period of several days.

  2. Carbon Superatom Thin Films

    Energy Technology Data Exchange (ETDEWEB)

    Canning, A. [Cray Research, PSE, EPFL, 1015 Lausanne (Switzerland); Canning, A.; Galli, G. [Institut Romand de Recherche Numerique en Physique des Materiaux (IRRMA), IN-Ecublens, 1015 Lausanne (Switzerland); Kim, J. [Department of Physics, The Ohio State University, Columbus, Ohio 43210 (United States)

    1997-06-01

    We report on quantum molecular dynamics simulations of C{sub 28} deposition on a semiconducting surface. Our results show that under certain deposition conditions C{sub 28} {close_quote}s act as building blocks on a nanometer scale to form a thin film of nearly defect-free molecules. The C{sub 28} {close_quote}s behave as carbon superatoms, with the majority of them being threefold or fourfold coordinated, similar to carbon atoms in amorphous systems. The microscopic structure of the deposited film supports recent suggestions about the stability of a new form of carbon, the hyperdiamond solid. {copyright} {ital 1997} {ital The American Physical Society}

  3. Synthesis of ALD zinc oxide and thin film materials optimization for UV photodetector applications

    Science.gov (United States)

    Tapily, Kandabara Nouhoum

    Zinc oxide (ZnO) is a direct, wide bandgap semiconductor material. It is thermodynamically stable in the wurtzite structure at ambient temperature conditions. ZnO has very interesting optical and electrical properties and is a suitable candidate for numerous optoelectronic applications such as solar cells, LEDs and UV-photodetectors. ZnO is a naturally n-type semiconductor. Due to the lack of reproducible p-type ZnO, achieving good homojunction ZnO-based photodiodes such as UV-photodetectors remains a challenge. Meanwhile, heterojunction structures of ZnO with p-type substrates such as SiC, GaN, NiO, AlGaN, Si etc. are used; however, those heterojunction diodes suffer from low efficiencies. ZnO is an n-type material with numerous intrinsic defect levels responsible for the electrical and optical behaviors. Presently, there is no clear consensus about the origin of those defects. In this work, ZnO was synthesized by atomic layer deposition (ALD). ALD is a novel deposition technique suitable for nanotechnology engineering that provides unique features such as precise control of ZnO thin film with atomic resolution, high uniformity, good conformity and high aspect ratio. Using this novel deposition technique, the ALD ZnO deposition process was developed and optimized using diethyl zinc as the precursor for zinc and water vapor as the oxygen source. In order to optimize the film quality for use in electronic applications, the physical, mechanical and electrical properties were investigated. The structural and mechanical properties of the ALD ZnO thin films were investigated by X-ray diffraction (XRD), transmission electron microscopy (TEM), atomic force microscopy (AFM), scanning electron microscopy (SEM), spectroscopic Ellipsometry, X-ray photoelectron spectroscopy (XPS), Raman spectroscopy, UV-VIS absorption and nanoindentation. The electrical characterizations were performed using C-V, I-V, DLTS, Hall Effect, and four-point probe. The intrinsic defects responsible

  4. MOCVD ZnO/Screen Printed Ag Back Reflector for Flexible Thin Film Silicon Solar Cell Application

    OpenAIRE

    Amornrat Limmanee; Patipan Krudtad; Sasiwimon Songtrai; Suttinan Jaroensathainchok; Taweewat Krajangsang; Jaran Sritharathikhun; Kobsak Sriprapha

    2014-01-01

    We have prepared Ag back electrode by screen printing technique and developed MOCVD ZnO/screen printed Ag back reflector for flexible thin film silicon solar cell application. A discontinuity and poor contact interface between the MOCVD ZnO and screen printed Ag layers caused poor open circuit voltage (Voc) and low fill factor (FF); however, an insertion of a thin sputtered ZnO layer at the interface could solve this problem. The n type hydrogenated amorphous silicon (a-Si:H) film is preferab...

  5. F and Ti doped silicate nanocomposite thin films for antimicrobial and easy clean applications.

    Science.gov (United States)

    Seo, YongSeong; Son, You-Hwan; Kim, Dae-Jin; Cho, Won-Je; Raj, C Justin; HyunYu, Kook

    2014-12-01

    Titanium isopropoxide (TIPO), tetraethyl orthosilicate (TEOS) and Fluoroalkylsilane (FAS) silane precursor were employed to coat transparent thin film on the glass substrate and these effectively prevents pollution on the glass from microorganisms. The each nanocomposition film was prepared by sol-gel method, the solution of nanocomposite was coated by spin coater with 1200 rpm for 30 sec and cured by thermal at 100 degrees C on glass which surface treated with Piranha solution. The nanocomposite films with highly self cleaning efficacy were fabricated and studied for various molar compositions of TEOS, TIPO and FAS. TEOS/TIPO film in glass substrate shows an optical transparency over 90% up to 30 mol% of TIPO in TEOS/TIPO composite films and also FAS incorporated up to 4 mol% onto TEOS/TIPO films. The anti-microbial efficiency of the nanocomposite film was improved 30% when it was exposed under UV light radiation than that in ambient condition.

  6. Superlattice Multinanolayered Thin Films of SiO2/SiO2 + Ge for Thermoelectric Device Applications

    Science.gov (United States)

    2013-04-05

    REPORT Superlattice multinanolayered thin films of SiO2/SiO2 + Ge for thermoelectric device applications 14. ABSTRACT 16. SECURITY CLASSIFICATION OF...used as a physical vapor deposition ( PVD ) system since we have used only two electron guns to evaporate the crucibles without any gas assistance. The

  7. Growth and surface characterization of TiNbZr thin films deposited by magnetron sputtering for biomedical applications

    Energy Technology Data Exchange (ETDEWEB)

    Tallarico, D.A. [Federal University of Sao Carlos, Materials Science and Engineering Graduation Program, Via Washington Luis km 235, CEP 13565-905 Sao Carlos, SP (Brazil); Gobbi, A.L. [Brazilian Nanotechnology National Laboratory, Rua Giuseppe Máximo Scolfaro 10.000, CEP 13083-100 Campinas, SP (Brazil); Paulin Filho, P.I. [Federal University of Sao Carlos, Department of Materials Engineering, Via Washington Luis km 235, CEP 13565-905 Sao Carlos, SP (Brazil); Maia da Costa, M.E.H. [Pontifical Catholic University of Rio de Janeiro, Department of Physics, CEP 22451-900 Rio de Janeiro, RJ (Brazil); Nascente, P.A.P., E-mail: nascente@ufscar.br [Federal University of Sao Carlos, Department of Materials Engineering, Via Washington Luis km 235, CEP 13565-905 Sao Carlos, SP (Brazil)

    2014-10-01

    Low modulus of elasticity and the presence of non-toxic elements are important criteria for the development of materials for implant applications. Low modulus Ti alloys can be developed by designing β-Ti alloys containing non-toxic alloying elements such as Nb and Zr. Actually, most of the metallic implants are produced with stainless steel (SS) because it has adequate bulk properties to be used as biomaterials for orthopedic or dental implants and is less expensive than Ti and its alloys, but it is less biocompatible than them. The coating of this SS implants with Ti alloy thin films may be one alternative to improve the biomaterial properties at a relatively low cost. Sputtering is a physical deposition technique that allows the formation of nanostructured thin films. Nanostructured surfaces are interesting when it comes to the bone/implant interface due to the fact that both the surface and the bone have nanoscale particle sizes and similar mechanical properties. TiNbZr thin films were deposited on both Si(111) and stainless steel (SS) substrates. The TiNbZr/Si(111) film was used as a model system, while the TiNbZr/SS film might improve the biocompatibility and extend the life time of stainless steel implants. The morphology, chemical composition, Young's modulus, and hardness of the films were analyzed by atomic force microscopy (AFM), X-ray photoelectron spectroscopy (XPS), energy-dispersive X-ray spectroscopy (EDS), and nanoindentation. - Highlights: • TiNbZr thin films were deposited on Si(111) and stainless steel (SS). • Their Young's modulus differences are within 5.3% and hardness 1.7%. • TiNbZr/SS film chemical composition remained almost constant with depth. • TiNbZr films presented nanostructured grains and low roughness for substrates. • TiNbZr/SS film hardness was about 100% greater than the SS substrate hardness.

  8. Biomimetic thin film deposition

    Energy Technology Data Exchange (ETDEWEB)

    Rieke, P.R.; Graff, G.E.; Campbell, A.A.; Bunker, B.C.; Baskaran, S.; Song, L.; Tarasevich, B.J.; Fryxell, G.E.

    1995-09-01

    Biological mineral deposition for the formation of bone, mollusk shell and other hard tissues provides materials scientists with illustrative materials processing strategies. This presentation will review the key features of biomineralization and how these features can be of technical importance. We have adapted existing knowledge of biomineralization to develop a unique method of depositing inorganic thin films and coating. Our approach to thin film deposition is to modify substrate surfaces to imitate the proteins found in nature that are responsible for controlling mineral deposition. These biomimetic surfaces control the nucleation and growth of the mineral from a supersaturated aqueous solution. This has many processing advantages including simple processing equipment, environmentally benign reagents, uniform coating of highly complex shapes, and enhanced adherence of coating. Many different types of metal oxide, hydroxide, sulfide and phosphate materials with useful mechanical, optical, electronic and biomedical properties can be deposited.

  9. Thin film processes

    CERN Document Server

    Vossen, John L

    1978-01-01

    Remarkable advances have been made in recent years in the science and technology of thin film processes for deposition and etching. It is the purpose of this book to bring together tutorial reviews of selected filmdeposition and etching processes from a process viewpoint. Emphasis is placed on the practical use of the processes to provide working guidelines for their implementation, a guide to the literature, and an overview of each process.

  10. Fabrication and nanoindentation properties of TiN/NiTi thin films and their applications in electrochemical sensing.

    Science.gov (United States)

    Kumar, Ashvani; Singh, Devendra; Goyal, Rajendra N; Kaur, Davinder

    2009-05-15

    Nanocrystalline TiN/NiTi thin films have been grown on silicon substrate by dc magnetron sputtering to improve the corrosion and mechanical properties of NiTi based shape memory alloys without sacrificing the phase transformation effect. Interestingly, the preferential orientation of the TiN films was observed to change from (1 1 1) to (2 0 0) with change in nature of sputtering gas from 70% Ar+30% N(2) to 100% N(2). In present study the influence of crystallographic orientation of TiN on mechanical and corrosion properties of TiN/NiTi thin films was investigated. TiN (2 0 0)/NiTi films were found to exhibit high hardness, high elastic modulus, and thereby better wear resistance as compared to pure NiTi and TiN (1 1 1)/NiTi films. Electrochemical test revealed that TiN coated NiTi film exhibits better corrosion resistance in 1M NaCl solution as compared to uncoated NiTi film. The application of TiN/NiTi films in the electrochemical sensing of dopamine, which has a critical physiological importance in Parkinson's disease, has been demonstrated. A comparison of voltammetric response of dopamine at silicon based electrodes modified with different nanocrystalline coatings indicated that these films catalyze the oxidation of dopamine.

  11. Growth and characterization of MMA/SiO2 hybrid low- thin films for interlayer dielectric applications

    Indian Academy of Sciences (India)

    Bhavana N Joshi; M A More; A M Mahajan

    2010-06-01

    The methylmethacrylate (MMA) incorporated SiO2 thin films having low dielectric constant ( = 2.97) were deposited successfully to realize new interlayer material for the enhancement of electrical performance of on-chip wiring in very large scale integrated (VLSI) circuits. We have successfully incorporated MMA monomer and eliminated the polymerization step to lower the dielectric constant of deposited thin film. The presence of peak of C=C bond in Fourier transform infrared (FTIR) spectra and carbon peak in energy dispersive (EDAX) spectra confirms the incorporation of carbon in the film due to MMA. The concentration of MMA has great impact on the peak area and full width at half maxima (FWHM) of the Si–O–Si bond, which decreases the density by low atomic weight elements and consequently decreases the dielectric constant. The surface morphology analysed by scanning electron microscopic (SEM) image shows excellent uniformity of the film. The refractive index of 1.31 was measured by ellipsometer for 0.5 ml MMA concentration film. These deposited thin films having low refractive index and dielectric constant are widely applicable for the optical interconnects and interlayer applications in integrated optical circuits and VLSI circuits.

  12. Thin film interconnect processes

    Science.gov (United States)

    Malik, Farid

    Interconnects and associated photolithography and etching processes play a dominant role in the feature shrinkage of electronic devices. Most interconnects are fabricated by use of thin film processing techniques. Planarization of dielectrics and novel metal deposition methods are the focus of current investigations. Spin-on glass, polyimides, etch-back, bias-sputtered quartz, and plasma-enhanced conformal films are being used to obtain planarized dielectrics over which metal films can be reliably deposited. Recent trends have been towards chemical vapor depositions of metals and refractory metal silicides. Interconnects of the future will be used in conjunction with planarized dielectric layers. Reliability of devices will depend to a large extent on the quality of the interconnects.

  13. Growth and characterization of CdS thin films on polymer substrates for photovoltaic applications.

    Science.gov (United States)

    Park, Yongseob; Kim, Eung Kwon; Lee, Suho; Lee, Jaehyeong

    2014-05-01

    In this work, cadmium sulfide (CdS) films were deposited on flexible polymer substrates such as polycarbonate (PC) and polyethylene terephthalate (PET). The r.f. magnetron sputtering, which is cost-effective scalable technique, was used for the film deposition. The structural and optical properties of the films grown at different sputtering pressures were investigated. When the CdS film was deposited at lower pressure, the crystallinity and the preferred orientation toward c-axis in hexagonal phase was improved. However, the optical transmittance was reduced as the sputtering pressure was decreased. Compared with the glass substrate, CdS films grown on polymer substrates were exhibited some wore structural and optical characteristics. CdTe thin film solar cell applied to sputtered CdS as a window layer showed a maximum efficiency of 11.6%.

  14. Properties of ordered titanium templates covered with Au thin films for SERS applications

    Science.gov (United States)

    Grochowska, Katarzyna; Siuzdak, Katarzyna; Sokołowski, Michał; Karczewski, Jakub; Szkoda, Mariusz; Śliwiński, Gerard

    2016-12-01

    Currently, roughened metal nanostructures are widely studied as highly sensitive Raman scattering substrates that show application potential in biochemistry, food safety or medical diagnostic. In this work the structural properties and the enhancement effect due to surface enhanced Raman scattering (SERS) of highly ordered nano-patterned titanium templates covered with thin (5-20 nm) gold films are reported. The templates are formed by preparation of a dense structure of TiO2 nanotubes on a flat Ti surface (2 × 2 cm2) and their subsequent etching down to the substrate. SEM images reveal the formation of honeycomb nanostructures with the cavity diameter of 80 nm. Due to the strongly inhomogeneous distribution of the electromagnetic field in the vicinity of the Au film discontinuities the measured average enhancement factor (107-108) is markedly higher than observed for bare Ti templates. The enhancement factor and Raman signal intensity can be optimized by adjusting the process conditions and thickness of the deposited Au layer. Results confirm that the obtained structures can be used in surface enhanced sensing.

  15. Improved Adhesion of Gold Thin Films Evaporated on Polymer Resin: Applications for Sensing Surfaces and MEMS

    Directory of Open Access Journals (Sweden)

    Behrang Moazzez

    2013-05-01

    Full Text Available We present and analyze a method to improve the morphology and mechanical properties of gold thin films for use in optical sensors or other settings where good adhesion of gold to a substrate is of importance and where controlled topography/roughness is key. To improve the adhesion of thermally evaporated gold thin films, we introduce a gold deposition step on SU-8 photoresist prior to UV exposure but after the pre-bake step of SU-8 processing. Shrinkage and distribution of residual stresses, which occur during cross-linking of the SU-8 polymer layer in the post-exposure baking step, are responsible for the higher adhesion of the top gold film to the post-deposition cured SU-8 sublayer. The SU-8 underlayer can also be used to tune the resulting gold film morphology. Our promoter-free protocol is easily integrated with existing sensor microfabrication processes.

  16. WO{sub 3} thin film based multiple sensor array for electronic nose application

    Energy Technology Data Exchange (ETDEWEB)

    Ramgir, Niranjan S., E-mail: niranjanpr@yahoo.com, E-mail: deepakcct1991@gmail.com; Goyal, C. P.; Datta, N.; Kaur, M.; Debnath, A. K.; Aswal, D. K.; Gupta, S. K. [Thin Film Devices Section, Technical Physics Division, Bhabha Atomic Research Centre, Mumbai–400085 (India); Goyal, Deepak, E-mail: niranjanpr@yahoo.com, E-mail: deepakcct1991@gmail.com [Thin Film Devices Section, Technical Physics Division, Bhabha Atomic Research Centre, Mumbai–400085 (India); Centre for Converging Technologies, University of Rajasthan, Jaipur-302004 (India)

    2015-06-24

    Multiple sensor array comprising 16 x 2 sensing elements were realized using RF sputtered WO{sub 3} thin films. The sensor films were modified with a thin layer of sensitizers namely Au, Ni, Cu, Al, Pd, Ti, Pt. The resulting sensor array were tested for their response towards different gases namely H{sub 2}S, NH{sub 3}, NO and C{sub 2}H{sub 5}OH. The sensor response values measured from the response curves indicates that the sensor array generates a unique signature pattern (bar chart) for the gases. The sensor response values can be used to get both qualitative and quantitative information about the gas.

  17. Zinc-Based Semiconductors/Polymer Thin Films Junction for Photovoltaic Application

    OpenAIRE

    Souad Al-bat’hi; K. A. Buhari; Latiff, M. I.

    2012-01-01

    Thin films of ZnO and ZnTe semiconductors were deposited on ITO conducting glass substrates by sputtering and electrodeposition techniques, respectively. On the other hand, thin films of ion conducting solid polymer electrolyte were prepared by solution cast technique. The polymer is a blend of 50 wt% polyethylene oxide and 50 wt% chitosan. To provide redox couple (I−/I3−), the polymer was complexed with ammonium iodide NH4I with addition of few crystals of iodine I2. Ammonium iodide NH4I was...

  18. Zinc-Based Semiconductors/Polymer Thin Films Junction for Photovoltaic Application

    OpenAIRE

    Souad Al-bat’hi; K. A. Buhari; M. I. Latiff

    2012-01-01

    Thin films of ZnO and ZnTe semiconductors were deposited on ITO conducting glass substrates by sputtering and electrodeposition techniques, respectively. On the other hand, thin films of ion conducting solid polymer electrolyte were prepared by solution cast technique. The polymer is a blend of 50 wt% polyethylene oxide and 50 wt% chitosan. To provide redox couple (I−/I3−), the polymer was complexed with ammonium iodide NH4I with addition of few crystals of iodine I2. Ammonium iodide NH4I was...

  19. Solution-Processing of Chalcogenide Nanoparticles and Thin Films for Photovoltaic Applications

    OpenAIRE

    Carreté, Àlex

    2015-01-01

    [eng] Thin film solar cells based on direct band gap semiconductors have attracted much research during last decades. Thin film technologies are currently commercial and display record power conversion efficiencies up to 20% at the laboratory scale. However, typical direct band gap semiconductors, CdTe and CuIn1-xGaxS2 (CIGS), content scarce and/or toxic elements such as In, Ga or Cd. An alternative to these materials is Cu2ZnSnS4 (CZTS), formed by abundant and non toxic elements. CZTS i...

  20. A monolithic thin film electrochromic window

    Energy Technology Data Exchange (ETDEWEB)

    Goldner, R.B.; Arntz, F.O.; Berera, G.; Haas, T.E.; Wong, K.K. (Tufts Univ., Medford, MA (United States). Electro-Optics Technology Center); Wei, G. (Mobil Solar Energy Corp., Billerica, MA (United States)); Yu, P.C. (PPG Industries, Inc., Monroeville, PA (United States))

    1991-01-01

    Three closely related thin film solid state ionic devices that are potentially important for applications are: electrochromic smart windows, high energy density thin film rechargeable batteries, and thin film electrochemical sensors. Each usually has at least on mixed ion/electron conductor, an electron-blocking ion conductor, and an ion-blocking electron conductor, and many of the technical issues associated with thin film solid state ionics are common to all three devices. Since the electrochromic window has the added technical requirement of electrically-controlled optical modulation, (over the solar spectrum), and since research at the authors' institution has focused primarily on the window structure, this paper will address the electrochromic window, and particularly a monolithic variable reflectivity electrochromic window, as an illustrative example of some of the challenges and opportunities that are confronting the thin film solid state ionics community. 33 refs.

  1. A monolithic thin film electrochromic window

    Energy Technology Data Exchange (ETDEWEB)

    Goldner, R.B.; Arntz, F.O.; Berera, G.; Haas, T.E.; Wong, K.K. [Tufts Univ., Medford, MA (United States). Electro-Optics Technology Center; Wei, G. [Mobil Solar Energy Corp., Billerica, MA (United States); Yu, P.C. [PPG Industries, Inc., Monroeville, PA (United States)

    1991-12-31

    Three closely related thin film solid state ionic devices that are potentially important for applications are: electrochromic smart windows, high energy density thin film rechargeable batteries, and thin film electrochemical sensors. Each usually has at least on mixed ion/electron conductor, an electron-blocking ion conductor, and an ion-blocking electron conductor, and many of the technical issues associated with thin film solid state ionics are common to all three devices. Since the electrochromic window has the added technical requirement of electrically-controlled optical modulation, (over the solar spectrum), and since research at the authors` institution has focused primarily on the window structure, this paper will address the electrochromic window, and particularly a monolithic variable reflectivity electrochromic window, as an illustrative example of some of the challenges and opportunities that are confronting the thin film solid state ionics community. 33 refs.

  2. Fabrication of Yttria stabilized zirconia thin films on poroussubstrates for fuel cell applications

    Energy Technology Data Exchange (ETDEWEB)

    Leming, Andres [Univ. of California, Berkeley, CA (United States)

    2003-06-16

    A process for the deposition of yttria stabilized zirconia (YSZ) films, on porous substrates, has been developed. These films have possible applications as electrolyte membranes in fuel cells. The films were deposited from colloidal suspensions through the vacuum infiltration technique. Films were deposited on both fully sintered and partially sintered substrates. A critical cracking thickness for the films was identified and strategies are presented to overcome this barrier. Green film density was also examined, and a method for improving green density by changing suspension pH and surfactant was developed. A dependence of film density on film thickness was observed, and materials interactions are suggested as a possible cause. Non-shorted YSZ films were obtained on co-fired substrates, and a cathode supported solid oxide fuel cell was constructed and characterized.

  3. Development of CdSe thin films for application in electronic devices

    OpenAIRE

    Olusola, O. I.; O. K. Echendu; Dharmadasa, I

    2015-01-01

    Thin films of cadmium selenide (CdSe) have been deposited on fluorine-doped tin oxide (FTO)-coated glass using potentiostatic electrodeposition method. The suitable range of deposition potentials for the formation of stoichiometric layer of CdSe was established using cyclic voltammograms. The films have been characterised using X-ray diffraction (XRD), Raman spectroscopy, optical absorption, scanning electron microscopy, atomic force microscopy and photo-electrochemical (PEC) cell techniques....

  4. Investigation of resistive switching in barium strontium titanate thin films for memory applications

    Energy Technology Data Exchange (ETDEWEB)

    Shen, Wan

    2010-11-17

    Resistive random access memory (RRAM) has attracted much attention due to its low power consumption, high speed operation, non-readout disturbance and high density integration potential and is regarded as one of the most promising candidates for the next generation non-volatile memory. The resistive switching behavior of Mn-doped BaSrTiO{sub 3} (BST) thin films with different crystalline properties was investigated within this dissertation. The laser fluence dependence was checked in order to optimize the RRAM properties. Although the film epitaxial quality was improved by reducing the laser energy during deposition process, the yields fluctuated and only 3% RRAM devices with highest epitaxial quality of BST film shows resistive switching behavior instead of 67% for the samples with worse film quality. It gives a clue that the best thin film quality does not result in the best switching performance, and it is a clear evidence of the importance of the defects to obtain resistive switching phenomena. The bipolar resistive switching behavior was studied with epitaxial BST thin films on SRO/STO. Compared to Pt top electrode, the yield, endurance and reliability were strongly improved for the samples with W top electrode. Whereas the samples with Pt top electrode show a fast drop of the resistance for both high and low resistance states, the devices with W top electrode can be switched for 10{sup 4} times without any obvious degradation. The resistance degradation for devices with Pt top electrode may result from the diffusion of oxygen along the Pt grain boundaries during cycling whereas for W top electrode the reversible oxidation and reduction of a WO{sub x} layer, present at the interface between W top electrode and BST film, attributes to the improved switching property. The transition from bipolar to unipolar resistive switching in polycrystalline BST thin films was observed. A forming process which induces a metallic low resistance state is prerequisite for the

  5. High-energy ion treatments of amorphous As40Se60 thin films for optical applications

    Directory of Open Access Journals (Sweden)

    Rashmi Chauhan

    2014-06-01

    Full Text Available The treatment of 100 MeV Ag swift-heavy ion (SHI irradiation with five different fluences (3×1010, 1×1011, 3×1011, 1×1012, and 3×1012 ions/cm2 was used to design optical and structural properties of amorphous (a- As40Se60 chalcogenide thin films. Swanepoel method was applied on transmission measurements to determine the changes in optical bandgap, Tauc parameter and linear optical parameters, i.e., linear optical absorption, extinction coefficient and linear refractive index. Dispersion of the material was determined by Wemple–DiDomenico relation. Changes in nonlinear optical parameters of third-order optical susceptibility and nonlinear refractive index were determined using semi-empirical relations. Changes in surface morphology of the films were investigated using SEM observation, which indicated that fluence 3×1012 ions/cm2 was upper threshold limit for these films for ion treatment. It is observed that optical bandgap reduces from 1.76 eV to 1.64 eV, and nonlinear refractive index increases from 1.31×10−10 [esu] to 1.74×10−10 [esu]. Linear refractive index initially increases from 2.80 to 3.52 (for fluence 3×1010 ions/cm2 and then keeps decreasing. The observed changes in optical properties upon irradiation were explained in terms of structural rearrangements by Raman measurement. The study was compiled with the previous literature to propose SHI as an effective optical engineering technique to achieve desired changes according to the need of optical/photonic applications.

  6. Synthesis of Ag-TiO2 composite nano thin film for antimicrobial application.

    Science.gov (United States)

    Yu, Binyu; Leung, Kar Man; Guo, Qiuquan; Lau, Woon Ming; Yang, Jun

    2011-03-18

    TiO2 photocatalysts have been found to kill cancer cells, bacteria and viruses under mild UV illumination, which offers numerous potential applications. On the other hand, Ag has long been proved as a good antibacterial material as well. The advantage of Ag-TiO2 nanocomposite is to expand the nanomaterial's antibacterial function to a broader range of working conditions. In this study neat TiO2 and Ag-TiO2 composite nanofilms were successfully prepared on silicon wafer via the sol-gel method by the spin-coating technique. The as-prepared composite Ag-TiO2 and TiO2 films with different silver content were characterized by scanning electron microscopy (SEM), atomic force microscopy (AFM), x-ray diffraction (XRD) and x-ray photoelectron spectroscopy (XPS) to determine the topologies, microstructures and chemical compositions, respectively. It was found that the silver nanoparticles were uniformly distributed and strongly attached to the mesoporous TiO2 matrix. The morphology of the composite film could be controlled by simply tuning the molar ratio of the silver nitrate aqueous solution. XPS results confirmed that the Ag was in the Ag(0) state. The antimicrobial effect of the synthesized nanofilms was carried out against gram-negative bacteria (Escherichia coli ATCC 29425) by using an 8 W UV lamp with a constant relative intensity of 0.6 mW cm(-2) and in the dark respectively. The synthesized Ag-TiO2 thin films showed enhanced bactericidal activities compared to the neat TiO2 nanofilm both in the dark and under UV illumination.

  7. High-energy ion treatments of amorphous As40Se60 thin films for optical applications

    Institute of Scientific and Technical Information of China (English)

    Rashmi Chauhan; Arvind Tripathi; Krishna Kant Srivastava

    2014-01-01

    The treatment of 100 MeV Ag swift-heavy ion (SHI) irradiation with five different fluences (3 ? 1010, 1 ? 1011, 3 ? 1011, 1 ? 1012, and 3 ? 1012 ions/cm2) was used to design optical and structural properties of amorphous (a-) As40Se60 chalcogenide thin films. Swanepoel method was applied on transmission measurements to determine the changes in optical bandgap, Tauc parameter and linear optical parameters, i.e., linear optical absorption, extinction coefficient and linear refractive index. Dispersion of the material was determined by Wemple-DiDomenico relation. Changes in nonlinear optical parameters of third-order optical susceptibility and nonlinear refractive index were determined using semi-empirical relations. Changes in surface morphology of the films were investigated using SEM observation, which indicated that fluence 3 ? 1012 ions/cm2 was upper threshold limit for these films for ion treatment. It is observed that optical bandgap reduces from 1.76 eV to 1.64 eV, and nonlinear refractive index increases from 1.31 ? 10 ? 10 [esu] to 1.74 ? 10 ? 10 [esu]. Linear refractive index initially increases from 2.80 to 3.52 (for fluence 3 ? 1010 ions/cm2) and then keeps decreasing. The observed changes in optical properties upon irradiation were explained in terms of structural rearrangements by Raman measurement. The study was compiled with the previous literature to propose SHI as an effective optical engineering technique to achieve desired changes according to the need of optical/photonic applications.

  8. Synthesis of Ag-TiO2 composite nano thin film for antimicrobial application

    Science.gov (United States)

    Yu, Binyu; Leung, Kar Man; Guo, Qiuquan; Lau, Woon Ming; Yang, Jun

    2011-03-01

    TiO2 photocatalysts have been found to kill cancer cells, bacteria and viruses under mild UV illumination, which offers numerous potential applications. On the other hand, Ag has long been proved as a good antibacterial material as well. The advantage of Ag-TiO2 nanocomposite is to expand the nanomaterial's antibacterial function to a broader range of working conditions. In this study neat TiO2 and Ag-TiO2 composite nanofilms were successfully prepared on silicon wafer via the sol-gel method by the spin-coating technique. The as-prepared composite Ag-TiO2 and TiO2 films with different silver content were characterized by scanning electron microscopy (SEM), atomic force microscopy (AFM), x-ray diffraction (XRD) and x-ray photoelectron spectroscopy (XPS) to determine the topologies, microstructures and chemical compositions, respectively. It was found that the silver nanoparticles were uniformly distributed and strongly attached to the mesoporous TiO2 matrix. The morphology of the composite film could be controlled by simply tuning the molar ratio of the silver nitrate aqueous solution. XPS results confirmed that the Ag was in the Ag0 state. The antimicrobial effect of the synthesized nanofilms was carried out against gram-negative bacteria (Escherichia coli ATCC 29425) by using an 8 W UV lamp with a constant relative intensity of 0.6 mW cm - 2 and in the dark respectively. The synthesized Ag-TiO2 thin films showed enhanced bactericidal activities compared to the neat TiO2 nanofilm both in the dark and under UV illumination.

  9. Measurement of effective piezoelectric coefficients of PZT thin films for energy harvesting application with interdigitated electrodes.

    Science.gov (United States)

    Chidambaram, Nachiappan; Mazzalai, Andrea; Muralt, Paul

    2012-08-01

    Interdigitated electrode (IDE) systems with lead zirconate titanate (PZT) thin films play an increasingly important role for two reasons: first, such a configuration generates higher voltages than parallel plate capacitor-type electrode (PPE) structures, and second, the application of an electric field leads to a compressive stress component in addition to the overall stress state, unlike a PPE structure, which results in tensile stress component. Because ceramics tend to crack at relatively moderate tensile stresses, this means that IDEs have a lower risk of cracking than PPEs. For these reasons, IDE systems are ideal for energy harvesting of vibration energy, and for actuators. Systematic investigations of PZT films with IDE systems have not yet been undertaken. In this work, we present results on the evaluation of the in-plane piezoelectric coefficients with IDE systems. Additionally, we also propose a simple and measurable figure of merit (FOM) to analyze and evaluate the relevant piezoelectric parameter for harvesting efficiency without the need to fabricate the energy harvesting device. Idealized effective coefficients e(IDE) and h(IDE) are derived, showing its composite nature with about one-third contribution of the transverse effect, and about two-thirds contribution of the longitudinal effect in the case of a PZT film deposited on a (100)-oriented silicon wafer with the in-plane electric field along one of the Si directions. Randomly oriented 1-μm-thick PZT 53/47 film deposited by a sol-gel technique, was evaluated and yielded an effective coefficient e(IDE) of 15 C·m(-2). Our FOM is the product between effective e and h coefficient representing twice the electrical energy density stored in the piezoelectric film per unit strain deformation (both for IDE and PPE systems). Assuming homogeneous fields between the fingers, and neglecting the contribution from below the electrode fingers, the FOM for IDE structures with larger electrode gap is derived to be

  10. MOCVD ZnO/Screen Printed Ag Back Reflector for Flexible Thin Film Silicon Solar Cell Application

    Directory of Open Access Journals (Sweden)

    Amornrat Limmanee

    2014-01-01

    Full Text Available We have prepared Ag back electrode by screen printing technique and developed MOCVD ZnO/screen printed Ag back reflector for flexible thin film silicon solar cell application. A discontinuity and poor contact interface between the MOCVD ZnO and screen printed Ag layers caused poor open circuit voltage (Voc and low fill factor (FF; however, an insertion of a thin sputtered ZnO layer at the interface could solve this problem. The n type hydrogenated amorphous silicon (a-Si:H film is preferable for the deposition on the surface of MOCVD ZnO film rather than the microcrystalline film due to its less sensitivity to textured surface, and this allowed an improvement in the FF. The n-i-p flexible amorphous silicon solar cell using the MOCVD ZnO/screen printed Ag back reflector showed an initial efficiency of 6.2% with Voc=0.86 V, Jsc=12.4 mA/cm2, and FF = 0.58 (1 cm2. The identical quantum efficiency and comparable performance to the cells using conventional sputtered Ag back electrode have verified the potential of the MOCVD ZnO/screen printed Ag back reflector and possible opportunity to use the screen printed Ag thick film for flexible thin film silicon solar cells.

  11. PbS Thin Films for Photovoltaic Applications Obtained by Non-Traditional Chemical Bath Deposition

    OpenAIRE

    2015-01-01

    To optimize cost-efficiency relation for thin film solar cells, we explore the recently developed versions of chemical deposition of semiconductor films, together with classic CBD (Chemical Bath Deposition): SILAR (Successive Ionic Layer Adsorption and Reaction) and PCBD (Photo Chemical Bath Deposition), all of them ammonia-free and ecologically friendly. The films of CdS and PbS were made, and experimental solar cells with CdS window layer and PbS absorber elaborated. We found that band gap ...

  12. Magnetron sputtered Cu{sub 3}N/NiTiCu shape memory thin film heterostructures for MEMS applications

    Energy Technology Data Exchange (ETDEWEB)

    Kaur, Navjot; Choudhary, Nitin [Indian Institute of Technology Roorkee, Roorkee, Functional Nanomaterials Research Lab, Department of Physics and Centre of Nanotechnology (India); Goyal, Rajendra N. [Indian Institute of Technology, Roorkee, Department of Chemistry (India); Viladkar, S. [Indian Institute of Technology Roorkee, Roorkee, Functional Nanomaterials Research Lab, Department of Physics and Centre of Nanotechnology (India); Matai, I.; Gopinath, P. [Indian Institute of Technology, Roorkee, Centre for Nanotechnology (India); Chockalingam, S. [Indian Institute of Technology, Guwahati, Department of Biotechnology (India); Kaur, Davinder, E-mail: dkaurfph@iitr.ernet.in [Indian Institute of Technology Roorkee, Roorkee, Functional Nanomaterials Research Lab, Department of Physics and Centre of Nanotechnology (India)

    2013-03-15

    In the present study, for the first time, Cu{sub 3}N/NiTiCu/Si heterostructures were successfully grown using magnetron sputtering technique. Nanocrystalline copper nitride (Cu{sub 3}N with thickness {approx}200 nm) thin films and copper nanodots were subsequently deposited on the surface of 2-{mu}m-thick NiTiCu shape memory thin films in order to improve the surface corrosion and nickel release properties of NiTiCu thin films. Interestingly, the phase transformation from martensite phase to austenite phase has been observed in Cu{sub 3}N/NiTiCu heterostructures with corresponding change in texture and surface morphology of top Cu{sub 3}N films. Field emission scanning electron microscopy and atomic force microscope images of the heterostructures reveals the formation of 20-nm-sized copper nanodots on NiTiCu surface at higher deposition temperature (450 Degree-Sign C) of Cu{sub 3}N. Cu{sub 3}N passivated NiTiCu films possess low corrosion current density with higher corrosion potential and, therefore, better corrosion resistance as compared to pure NiTiCu films. The concentration of Ni released from the Cu{sub 3}N/NiTiCu samples was observed to be much less than that of pure NiTiCu film. It can be reduced to the factor of about one-ninth after the surface passivation resulting in smooth, homogeneous and highly corrosion resistant surface. The antibacterial and cytotoxicity of pure and Cu{sub 3}N coated NiTiCu thin films were investigated through green fluorescent protein expressing E. coli bacteria and human embryonic kidney cells. The results show the strong antibacterial property and non cytotoxicity of Cu{sub 3}N/NiTiCu heterostructure. This work is of immense technological importance due to variety of BioMEMS applications.

  13. Centrifugation-based Purification of Emerging Low-dimensional Materials and Their Thin-film Applications

    Science.gov (United States)

    Seo, Jung Woo

    Polydispersity in low-dimensional materials offers many interesting challenges and properties. In particular, the one- and two-dimensional carbon allotropes such as carbon nanotubes and graphene have demonstrated exquisite optoelectronic properties that are highly sensitive to their physical structures, where subtle variations in diameter and thickness render them with significantly different electronic band structures. Thus, the carbon nanomaterials have been the subject of extensive studies that address their polydispersity issues. Among these, solution-phase, buoyant density-based methods such as density gradient ultracentrifugation have been widely utilized to enrich subpopulations of carbon nanotubes and graphene with narrow distribution in diameter and thickness, enabling their applications in various next-generation thin-film devices. In this thesis, I present further advancement of centrifugation-based processing methods for emerging low-dimensional materials through systematic utilization of previously explored surfactant systems, development of novel surfactant types, and study of correlation between the chemical structure of surfactants and the dispersion and optoelectronic properties of the nanomaterials. First, I employ an iterative density gradient ultracentrifugation with a combination of anionic surfactants and addition of excess counter-ions to achieve isolation of novel diameter species of semiconducting single-walled carbon nanotubes. The purification of carbon nanotubes with simultaneous, ultrahigh-purity refinement in electronic type and diameter distribution leads to collaborative studies on heat distribution characteristics and diameter-dependent direct current and radio frequency performances in monodisperse carbon nanotube thin-film transistors. Next, I develop the use of non-ionic polymeric surfactants for centrifugation-based processes. Specifically, I utilize polypropylene and polyethylene oxide-based block copolymers with density

  14. Photoconductivity of thin organic films

    Science.gov (United States)

    Tkachenko, Nikolai V.; Chukharev, Vladimir; Kaplas, Petra; Tolkki, Antti; Efimov, Alexander; Haring, Kimmo; Viheriälä, Jukka; Niemi, Tapio; Lemmetyinen, Helge

    2010-04-01

    Thin organic films were deposited on silicon oxide surfaces with golden interdigitated electrodes (interelectrode gap was 2 μm), and the film resistivities were measured in dark and under white light illumination. The compounds selected for the measurements include molecules widely used in solar cell applications, such as polythiophene ( PHT), fullerene ( C60), pyrelene tetracarboxylic diimide ( PTCDI) and copper phthalocyanine ( CuPc), as well as molecules potentially interesting for photovoltaic applications, e.g. porphyrin-fullerene dyads. The films were deposited using thermal evaporation (e.g. for C60 and CuPc films), spin coating for PHT, and Langmuir-Schaeffer for the layer-by-layer deposition of porphyrin-fullerene dyads. The most conducting materials in the series are films of PHT and CuPc with resistivities 1.2 × 10 3 Ω m and 3 × 10 4 Ω m, respectively. Under light illumination resistivity of all films decreases, with the strongest light effect observed for PTCDI, for which resistivity decreases by 100 times, from 3.2 × 10 8 Ω m in dark to 3.1 × 10 6 Ω m under the light.

  15. Photoconductivity of thin organic films

    Energy Technology Data Exchange (ETDEWEB)

    Tkachenko, Nikolai V. [Department of Chemistry and Bioengineering, Tampere University of Technology, P.O. Box 541, FIN-33101 Tampere (Finland); Chukharev, Vladimir, E-mail: Vladimir.Chukharev@tut.fi [Department of Chemistry and Bioengineering, Tampere University of Technology, P.O. Box 541, FIN-33101 Tampere (Finland); Kaplas, Petra; Tolkki, Antti; Efimov, Alexander [Department of Chemistry and Bioengineering, Tampere University of Technology, P.O. Box 541, FIN-33101 Tampere (Finland); Haring, Kimmo; Viheriaelae, Jukka; Niemi, Tapio [Optoelectronics Research Centre, Tampere University of Technology, P.O. Box 692, FIN-33101 Tampere (Finland); Lemmetyinen, Helge [Department of Chemistry and Bioengineering, Tampere University of Technology, P.O. Box 541, FIN-33101 Tampere (Finland)

    2010-04-01

    Thin organic films were deposited on silicon oxide surfaces with golden interdigitated electrodes (interelectrode gap was 2 {mu}m), and the film resistivities were measured in dark and under white light illumination. The compounds selected for the measurements include molecules widely used in solar cell applications, such as polythiophene (PHT), fullerene (C{sub 60}), pyrelene tetracarboxylic diimide (PTCDI) and copper phthalocyanine (CuPc), as well as molecules potentially interesting for photovoltaic applications, e.g. porphyrin-fullerene dyads. The films were deposited using thermal evaporation (e.g. for C{sub 60} and CuPc films), spin coating for PHT, and Langmuir-Schaeffer for the layer-by-layer deposition of porphyrin-fullerene dyads. The most conducting materials in the series are films of PHT and CuPc with resistivities 1.2 x 10{sup 3} {Omega} m and 3 x 10{sup 4} {Omega} m, respectively. Under light illumination resistivity of all films decreases, with the strongest light effect observed for PTCDI, for which resistivity decreases by 100 times, from 3.2 x 10{sup 8} {Omega} m in dark to 3.1 x 10{sup 6} {Omega} m under the light.

  16. Flexible thin film magnetoimpedance sensors

    Energy Technology Data Exchange (ETDEWEB)

    Kurlyandskaya, G.V., E-mail: galina@we.lc.ehu.es [Universidad del País Vasco, UPV/EHU, Departamento de Electricidad y Electrónica, P.O. Box 644, Bilbao 48080 (Spain); Ural Federal University, Laboratory of Magnetic sensoric, Lenin Ave. 51, 620083 Ekaterinburg (Russian Federation); Fernández, E. [BCMaterials UPV-EHU, Vizcaya Science and Technology Park, 48160 Derio (Spain); Svalov, A. [Universidad del País Vasco, UPV/EHU, Departamento de Electricidad y Electrónica, P.O. Box 644, Bilbao 48080 (Spain); Ural Federal University, Laboratory of Magnetic sensoric, Lenin Ave. 51, 620083 Ekaterinburg (Russian Federation); Burgoa Beitia, A. [Universidad del País Vasco, UPV/EHU, Departamento de Electricidad y Electrónica, P.O. Box 644, Bilbao 48080 (Spain); García-Arribas, A. [Universidad del País Vasco, UPV/EHU, Departamento de Electricidad y Electrónica, P.O. Box 644, Bilbao 48080 (Spain); BCMaterials UPV-EHU, Vizcaya Science and Technology Park, 48160 Derio (Spain); Larrañaga, A. [SGIker, Servicios Generales de Investigación, Universidad del País Vasco (UPV/EHU), 48080 Bilbao (Spain)

    2016-10-01

    Magnetically soft thin film deposited onto polymer substrates is an attractive option for flexible electronics including magnetoimpedance (MI) applications. MI FeNi/Ti based thin film sensitive elements were designed and prepared using the sputtering technique by deposition onto rigid and flexible substrates at different deposition rates. Their structure, magnetic properties and MI were comparatively analyzed. The main structural features were sufficiently accurately reproduced in the case of deposition onto cyclo olefine polymer substrates compared to glass substrates for the same conditions. Although for the best condition (28 nm/min rate) of the deposition onto polymer a significant reduction of the MI field sensitivity was found satisfactory for sensor applications sensitivity: 45%/Oe was obtained for a frequency of 60 MHz. - Highlights: • [FeNi/Ti]{sub 3}/Cu/[FeNi/Ti]{sub 3} films were prepared by sputtering at different deposition rates. • Polymer substrates insure sufficiently accurate reproducibility of the film structure. • High deposition rate of 28 nm/min insures the highest values of the magnetoimpedance sensitivity. • Deposition onto polymer results in the satisfactory magnetoimpedance sensitivity of 45%/Oe.

  17. Low Loss Sol-Gel TiO2 Thin Films for Waveguiding Applications

    Directory of Open Access Journals (Sweden)

    Alexis Fischer

    2013-03-01

    Full Text Available TiO2 thin films were synthesized by sol-gel process: titanium tetraisopropoxide (TTIP was dissolved in isopropanol, and then hydrolyzed by adding a water/isopropanol mixture with a controlled hydrolysis ratio. The as prepared sol was deposited by “dip-coating” on a glass substrate with a controlled withdrawal speed. The obtained films were annealed at 350 and 500 °C (2 h. The morphological properties of the prepared films were analyzed by Scanning Electron Microscopy (SEM and Atomic Force Microscopy (AFM. The optical waveguiding properties of TiO2 films were investigated for both annealing temperature using m-lines spectroscopy. The refractive indices and the film thickness were determined from the measured effective indices. The results show that the synthesized planar waveguides are multimodes and demonstrate low propagation losses of 0.5 and 0.8 dB/cm for annealing temperature 350 and 500 °C, respectively.

  18. Plasmonic modes in thin films: quo vadis?

    Directory of Open Access Journals (Sweden)

    Antonio ePolitano

    2014-07-01

    Full Text Available Herein, we discuss the status and the prospect of plasmonic modes in thin films. Plasmons are collective longitudinal modes of charge fluctuation in metal samples excited by an external electric field. Surface plasmons (SPs are waves that propagate along the surface of a conductor with applications in magneto-optic data storage, optics, microscopy, and catalysis. In thin films the electronic response is influenced by electron quantum confinement. Confined electrons modify the dynamical screening processes at the film/substrate interface by introducing novel properties with potential applications and, moreover, they affect both the dispersion relation of SP frequency and the damping processes of the SP.Recent calculations indicate the emergence of acoustic surface plasmons (ASP in Ag thin films exhibiting quantum well states and in graphene films. The slope of the dispersion of ASP decreases with film thickness. We also discuss open issues in research on plasmonic modes in graphene/metal interfaes.

  19. Crystalline Molybdenum Oxide Thin-Films for Application as Interfacial Layers in Optoelectronic Devices

    DEFF Research Database (Denmark)

    Fernandes Cauduro, André Luis; dos Reis, Roberto; Chen, Gong

    2017-01-01

    The ability to control the interfacial properties in metal-oxide thin films through surface defect engineering is vital to fine-tune their optoelectronic properties and thus their integration in novel optoelectronic devices. This is exemplified in photovoltaic devices based on organic, inorganic...

  20. Flexible diamond-like carbon thin film coated rubbers: fundamentals and applications

    NARCIS (Netherlands)

    Pei, Y.T.

    2015-01-01

    Dynamic rubber seals are major sources of friction of lubrication systems and bearings, which may take up to 75% of the total friction. The solution we present is to coat rubbers with diamond-like carbon (DLC) thin film, by which the coefficient of friction is reduced to less than one tenth. Coating

  1. Flexible diamond-like carbon thin film coated on rubbers: fundamentals and applications

    NARCIS (Netherlands)

    Pei, Yutao

    2015-01-01

    Dynamic rubber seals are the major source of friction in lubrication systems and bearings, which may take up to 70% of the total friction. Our solution is to coat rubbers with flexible diamond-like carbon (DLC) thin film by which the coefficient of friction is reduced from above 1.5 to below 0.15. C

  2. Crystalline Molybdenum Oxide Thin-Films for Application as Interfacial Layers in Optoelectronic Devices

    DEFF Research Database (Denmark)

    Fernandes Cauduro, André Luis; dos Reis, Roberto; Chen, Gong

    2017-01-01

    The ability to control the interfacial properties in metal-oxide thin films through surface defect engineering is vital to fine-tune their optoelectronic properties and thus their integration in novel optoelectronic devices. This is exemplified in photovoltaic devices based on organic, inorganic...

  3. Thin phosphatidylcholine films as background surfaces with further possibilities of functionalization for biomedical applications

    NARCIS (Netherlands)

    Tauk, Lara; Thami, Thierry; Ferez, Lynda; Kocer, Armagan; Janot, Jean-Marc; Dejardin, Philippe

    2013-01-01

    Non-specific adsorption is a crucial problem in the biomedical field. To produce surfaces avoiding this phenomenon, we functionalized thin (7-180 nm) poly(methylhydrosiloxane) (PMHS) network films at room temperature (approximate to 20 degrees C) with phospholipids(PL)bearing a phosphorylcholine hea

  4. Polymers for opto-electronic applications: structure and morphology of thin films and their interfaces

    NARCIS (Netherlands)

    van Hutten, P F; Krasnikov, V.V.; Hadziioannou, G

    2001-01-01

    Organic-organic and metal-organic interfaces are explored. The influence of the morphology of thin films of MEH-phenylene-vinylene oligomer (OPV5):C60 blends on their photovoltaic characteristics is demonstrated. An interdigitating structure is considered to be favorable for efficient operation. The

  5. Growth, Properties and Applications of Mo Ox Thin-Films Deposited by Reactive Sputtering

    DEFF Research Database (Denmark)

    Fernandes Cauduro, André Luis

    Transition metal-oxide (TMOs) thin-films are commonly used in optoelectronic devices such as in photovoltaics and light emitting diodes, using both organic, inorganic and hybrid technologies. In such devices, TMOs typically act as an interfacial layer, where its functionality is to facilitate hol...

  6. Ferroelectric Thin-Film Capacitors and Piezoelectric Switches for Mobile Communication Applications

    NARCIS (Netherlands)

    Klee, Mareike; van Esch, Harry; Keur, Wilco; Kumar, Biju; van Leuken-Peters, Linda; Liu, Jin; Mauczok, Rüdiger; Neumann, Kai; Reimann, Klaus; Renders, Christel; Roest, Aarnoud L.; Tiggelman, M.P.J.; de Wild, Marco; Wunnicke, Olaf; Zhao, Jing

    2009-01-01

    Thin-film ferroelectric capacitors have been integrated with resistors and active functions such as ESD protection into small, miniaturized modules, which enable a board space saving of up to 80%. With the optimum materials and processes, integrated capacitors with capacitance densities of up to 100

  7. Superhydrophilic surface treatment for thin film NiTi vascular applications

    Energy Technology Data Exchange (ETDEWEB)

    Chun, Youngjae, E-mail: yjchun@ucla.edu [Department of Mechanical and Aerospace Engineering, University of California, Los Angeles, 32-135, Engineering IV, Los Angeles, CA 90095 (United States); Levi, Daniel S., E-mail: dlevi@ucla.edu [Pediatric Cardiology, Mattel Children' s Hospital, UCLA, B2-427, 10833 Le Conte Avenue, Los Angeles, CA 90095-1743 (United States); Mohanchandra, K.P., E-mail: kpmohan@seas.ucla.edu [Department of Mechanical and Aerospace Engineering, University of California, Los Angeles, 32-135, Engineering IV, Los Angeles, CA 90095 (United States); Carman, Gregory P., E-mail: carman@seas.ucla.edu [Department of Mechanical and Aerospace Engineering, University of California, Los Angeles, 38-137M, Engineering IV, Los Angeles, CA 90095 (United States)

    2009-10-15

    A variety of surface treatment methods were evaluated to modify the hydrophilic nature of thin film nitinol (NiTi). It has been suggested that increasing hydrophilicity reduces the prevalence of platelet adhesion and thrombosis in the vascular system. In this study, thin film NiTi was treated with three pretreatments cleaning, buffered oxide etchant (BOE), and BOE/nitric acid (HNO{sub 3}), followed by one surface treatment. The three surface treatment studied were UV irradiation, thermal treatment, or hydrogen peroxide. Two surface treatments, i.e., thermal at 600 deg. C for 30 min and 30% hydrogen peroxide treatment for 15 h, produced superhydrophilic surfaces, i.e., wetting angle = 0 deg. However, the superhydrophilic surface produced by the thermal treatment also embrittled the thin film due to the relative thickness of the oxide grown. Long term studies in air showed that all surface treatments trend toward hydrophobic natures. However, storage of the surface treated thin film NiTi in Deionized (DI) water preserved even the superhydrophilic surfaces indefinitely.

  8. Modeling of wide-area thin-film metal-semiconductor-metal photodetectors for LIDAR applications

    Science.gov (United States)

    Glinz, Andreas P.; Morrison, Charles B.; Zhu, Zheng

    1998-07-01

    We report calculations of the collection current of interdigitated InGaAs metal-semiconductor-metal photodetectors. We show how interdigital spacing and thickness of the semiconductor layer influence the collection current. Both front and back illumination of devices carried on thin film membranes by means of epitaxial liftoff are examined.

  9. Thin film barium strontium titanate capacitors for tunable RF front-end applications

    NARCIS (Netherlands)

    Tiggelman, Markus Petrus Josephus

    2009-01-01

    In this thesis, the results of intensive electrical characterization, modeling and the design of hardware with thin film tunable capacitors, i.e., dielectric varactors, has been presented and discussed. Especially the quality factor Q and the tuning ratio of the tunable capacitors have been studied

  10. Deposition and optical properties of optimised ZnS/Ag/ZnS thin films for energy saving applications

    Energy Technology Data Exchange (ETDEWEB)

    Leftheriotis, G.; Yianoulis, P.; Patrikios, D. [Patras Univ. (Greece). Dept. of Physics

    1997-08-28

    Dielectric/Metal/Dielectric (D/M/D) thin films deposited on glass offer the possibility of significant energy savings in buildings and can find other applications as components of advanced materials design. In an effort to reduce the complexity and cost of production of D/M/D films, physical vapour deposition was used for the laboratory manufacture of ZnS/Ag/ZnS films on glass. ZnS was used because of its high refractive index, ease of deposition and low cost; Ag was used because of its low absorption in the visible spectrum. The films produced were of good quality, with luminous transmittance as high as 83.9%, IR reflectance above 90% and total hemispherical emittance equal to 6%. The ZnS layers were found not only to antireflect the Ag layer, but also to stabilise the ZnS/Ag/ZnS film, improve its adherence on glass and increase the film thermal resistance up to 240 C. A multipurpose computational optics tool based on the characteristic matrix formulation has been developed for the design and optimisation of the D/M/D films: The optimum thickness of each dielectric layer required to maximise the film luminous transmittance for a given metal layer thickness was established. The optical properties of the films designed were also predicted and the most suitable materials were identified. The optical properties of the films produced were measured and were found to compare favourably with the theoretical predictions. (orig.) 29 refs.

  11. Substrate dependent physical properties of evaporated CdO thin films for optoelectronic applications

    Energy Technology Data Exchange (ETDEWEB)

    Purohit, Anuradha; Chander, S.; Patel, S.L. [Department of Physics, Mohanlal Sukhadia University, Udaipur-313001 (India); Rangra, K.J. [Sensors and Transducers Group, CSIR-CEERI, Pilani-333031 (India); Dhaka, M.S., E-mail: msdhaka75@yahoo.co.in [Department of Physics, Mohanlal Sukhadia University, Udaipur-313001 (India)

    2017-06-15

    Highlights: • Substrate dependent physical properties of CdO thin films are carried out. • XRD patterns reveal that the films have cubic structure of space group Fm3m. • Optical direct band gap is found to vary with the substrates. • SEM images show that the films are compact and homogeneous. • I–V characteristics show ohmic behavior of the deposited CdO films. - Abstract: In this study, CdO thin films were grown by e-beam evaporation technique on glass, indium tin oxide (ITO), fluorine-doped tin oxide (FTO) and silicon (Si) wafer. The deposited films were analyzed by X-ray diffraction (XRD), UV–Vis spectrophotometer, scanning electron microscopy, energy dispersive spectroscopy (EDS) and source meter (current–voltage) for structural, optical, surface morphological, elemental and electrical analysis, respectively. The films have single phase of cubic structure (space group Fm3m) with (200) preferred orientation. The structural parameters viz. inter-planar spacing, grain size, lattice constant, internal strain and dislocation density are calculated and found to vary with the nature of the substrates. The optical band gap was found in the range 2.24–3.95 eV and strongly dependents on the substrates. The SEM analysis shows that the films are compact, homogeneous and have granular structure without any defects like pin holes and cracks. The EDS spectra confirmed the presence of cadmium (Cd) and oxygen (O) in the films deposited on different substrates. The current–voltage characteristics of the films show ohmic behavior.

  12. Latest improvements in microbolometer thin film packaging: paving the way for low-cost consumer applications

    Science.gov (United States)

    Yon, J. J.; Dumont, G.; Goudon, V.; Becker, S.; Arnaud, A.; Cortial, S.; Tisse, C. L.

    2014-06-01

    Silicon-based vacuum packaging is a key enabling technology for achieving affordable uncooled Infrared Focal Plane Arrays (IRFPA) required by a promising mass market that shows momentum for some extensive consumer applications, such as automotive driving assistance, smart presence localization and building management. Among the various approaches studied worldwide, CEA, LETI in partnership with ULIS is committed to the development of a unique technology referred to as PLP (Pixel Level Packaging). In this PLP technology, each bolometer pixel is sealed under vacuum using a transparent thin film deposition on wafer. PLP operates as an array of hermetic micro caps above the focal plane, each enclosing a single microbolometer. In continuation of our on-going studies on PLP for regular QVGA IRFPAs, this paper emphasizes on the innate scalability of the technology which was successfully demonstrated through the development of an 80 × 80 pixel IRFPA. The relevance of the technology with regard to the two formats is discussed, considering both performance and cost issues. We show that the suboptimal fill factor inherent to the PLP arrangement is not so critical when considering smaller arrays preferably fitted for consumer applications. The discussion is supported with the electro-optical performance measurements of the PLP-based 80×80 demonstrator.

  13. Inverter Circuits Using ZnO Nanoparticle Based Thin-Film Transistors for Flexible Electronic Applications

    Directory of Open Access Journals (Sweden)

    Fábio F. Vidor

    2016-08-01

    Full Text Available Innovative systems exploring the flexibility and the transparency of modern semiconducting materials are being widely researched by the scientific community and by several companies. For a low-cost production and large surface area applications, thin-film transistors (TFTs are the key elements driving the system currents. In order to maintain a cost efficient integration process, solution based materials are used as they show an outstanding tradeoff between cost and system complexity. In this paper, we discuss the integration process of ZnO nanoparticle TFTs using a high-k resin as gate dielectric. The performance in dependence on the transistor structure has been investigated, and inverted staggered setups depict an improved performance over the coplanar device increasing both the field-effect mobility and the ION/IOFF ratio. Aiming at the evaluation of the TFT characteristics for digital circuit applications, inverter circuits using a load TFT in the pull-up network and an active TFT in the pull-down network were integrated. The inverters show reasonable switching characteristics and V/V gains. Conjointly, the influence of the geometry ratio and the supply voltage on the devices have been analyzed. Moreover, as all integration steps are suitable to polymeric templates, the fabrication process is fully compatible to flexible substrates.

  14. Sputter deposition of thin film MIM capacitors on LTCC substrates for RF bypass and filtering applications

    Energy Technology Data Exchange (ETDEWEB)

    Murray, Jack [Missouri University of Science and Technology; O' Keefe, Matthew J. [Missouri University of Science and Technology; Wilder, Kristina [Missouri University of Science and Technology; Eatinger, Ryan [Kansas State University; Kuhn, William [Kansas State University; Krueger, Daniel S. [Honeywell Federal Manufacturing & Technologies; Wolf, J. Ambrose [Honeywell Federal Manufacturing & Technologies

    2011-08-31

    Thin film capacitors for RF bypass and filtering applications were sputter deposited onto low temperature co-fired ceramic (LTCC) substrates. The capacitors were configured in a metal-insulator-metal (MIM) design featuring 200 nm thick Al electrodes and a 300 nm thick Al{sub 2}O{sub 3} dielectric layer, with dimensions varied between ~150x150 μm and ~750x750 μm. DC current-voltage measurements (E ≤ 5 MV/cm) coupled with impedance analysis (≤15 MHz) was used to characterize the resulting devices. More than 90% of the devices functioned as capacitors with high DC resistance (>20 MΩ) and low loss (tan δ <0.1). A second set of capacitors were made under the same experimental conditions with device geometries optimized for high frequency (≥200 MHz) applications. These capacitors featured temperature coefficient of capacitance (TCC) values between 500 and 1000 ppm/°C as well as low loss and high self-resonant frequency performance (ESR <0.6 Ohms at self-resonance of 5.7 GHz for 82 pF). Capacitance and loss values were comparable between the capacitor structures of similar areas at the different frequency regimes.

  15. Manganese oxide thin films deposited by SILAR method for supercapacitor application

    Science.gov (United States)

    Jadhav, P. R.; Shinde, V. V.; Navathe, G. J.; Karanjkar, M. M.; Patil, P. S.

    2013-06-01

    The amorphous MnO2 thin films were prepared by simple and inexpensive successive ionic layer adsorption and reaction (SILAR) method. The prepared thin films were characterized by means of X-ray diffraction (XRD), Fourier transform infrared spectroscopy (FT-IR) and scanning electron microscopy (SEM). The electrochemical study was carried out by cyclic voltammetry in 1 M Na2SO4 electrolyte. The films showed the maximum specific capacitance of 243 F.g-1 at the scan rate of 10 mV.s-1. It is observed that two distinct peaks occurs in cyclic voltammogram during charging and discharging which correspond to the electrochemical oxidation and reduction reaction and different oxidation states of the Mn as Mn2+ and Mn3+. Further, the increase in specific capacitance is observed with the increase in the precursor concentration.

  16. Structure, physical properties, and applications of SrRuO3 thin films

    Energy Technology Data Exchange (ETDEWEB)

    Siemons, Wolter [ORNL; Koster, Gertjan [University of Twente, Enschede, Netherlands; Rijnders, Guus [MESA+ University of Twente, Enschede, Netherlands; Klein, Lior [Institute of Nanotechnology Bar-Ilan University, Ramat-Gan, Israel; Dodge, J. Steven [Simon Fraser University, Canada; Eom, Professor Chang-Beom [University of Wisconsin, Madison; Blank, Dave H. A. [University of Twente, Enschede, Netherlands; Beasley, Malcolm R [Stanford University

    2012-01-01

    SrRuO{sub 3} is endowed with three remarkable features. First, it is a moderately correlated material that exhibits several novel physical properties; second, it permits the epitaxial growth of essentially single-crystal films; and third, because it is a good conductor, it has attracted interest as a conducting layer in epitaxial heterostructures with a variety of functional oxides. In this review, the present state of knowledge of SrRuO{sub 3} thin films is summarized. Their role as a model system for studying magnetism and electron transport characterized by intermediate electron correlation and large magnetocrystalline anisotropy is demonstrated. The materials science of SrRuO{sub 3} thin film growth is reviewed, and its relationship to electronic, magnetic, and other physical properties is discussed. Finally, it is argued that, despite all that has been learned, a comprehensive understanding of SrRuO{sub 3} is still lacking and challenges remain.

  17. Thin phosphatidylcholine films as background surfaces with further possibilities of functionalization for biomedical applications.

    Science.gov (United States)

    Tauk, Lara; Thami, Thierry; Ferez, Lynda; Kocer, Armagan; Janot, Jean-Marc; Déjardin, Philippe

    2013-01-01

    Non-specific adsorption is a crucial problem in the biomedical field. To produce surfaces avoiding this phenomenon, we functionalized thin (7-180 nm) poly(methylhydrosiloxane) (PMHS) network films at room temperature (≈20°C) with phospholipids (PL) bearing a phosphorylcholine head. Regardless of their mode of preparation (casting or immersion), all surfaces appeared to be very hydrophilic with a captive air-bubble contact angle stabilized around 40°. The thin films were protein-repellent in phosphate saline buffer pH 7.4 according to analysis by normal scanning confocal fluorescence. Neither was any adsorption or spreading of l-α-phosphatidylcholine liposomes on such films observed. In addition, amino functional groups could be easily attached to the surface remaining available for further functionalization.

  18. Thermochromic VO2 thin films deposited by magnetron sputtering for smart window applications

    Science.gov (United States)

    Fortier, Jean-Philippe

    "Smart" windows are a perfect innovative example of technology that reduces our energy dependence and our impact on the environment while saving on the economical point of view. With the use of vanadium dioxide (VO2), a thermochromic compound, and this, as a thin coating, it would in fact be possible to control the sun's transmission of infrared light (heat) as a function of the surrounding environment temperature. In other words, its optical behavior would allow a more effective management of heat exchanges between a living venue and the outdoor environment. However, this type of window is still in a developmental stage. First, the oxide's deposition is not simple in nature. Based on a conventional deposition technique called magnetron sputtering mainly used in the fenestration industry, several factors such as the oxygen concentration and the substrate temperature during deposition can affect the coating's thermochromic behavior, and this, by changing its composition and crystallinity. Other control parameters such as the deposition rate, the pressure in the sputtering chamber and the choice of substrate may also modify the film microstructure, thereby varying its optical and electrical properties. In addition, several issues still persist as to its commercial application. For starters, the material's structural transition, related to the change of its optical properties, only occurs around 68°C. In addition, its low transparency and natural greenish colour are not visually appealing. Then, to this day, the deposition temperature required to crystallize and form the thermochromic oxide remains an obstacle for a possible large-scale application. Ultimately, although the material's change in temperature has been shown to be advantageous in situations of varying climate, the existing corrective solutions to these issues generate a deterioration of the thermochromic behavior. With no practical expertise on the material, this project was undertaken with certain

  19. Sol-gel synthesis and characterization of undoped and Al-doped ZnO thin films for memristive application

    Directory of Open Access Journals (Sweden)

    Dawit G. Ayana

    2016-11-01

    Full Text Available The Sol-gel route is a versatile method to fabricate multi-layer, dense and homogeneous ZnO thin films with a controlled thickness and defects for a memristive application. In this work, sol-gel derived multi-layer undoped and Al-doped ZnO thin films were prepared by a spin-coating technique on SiO2/Ti/Pt and silica glass substrates. The effect of both Al doping and curing conditions on the structural and morphological features of ZnO films was investigated by complementary techniques, including electron microscopy, atomic force microscopy, X-ray photoelectron spectroscopy, micro-Raman spectroscopy, and X-ray diffraction analysis. Electrical measurements were performed on SiO2/Ti/Pt/ZnO/Pt(dishes and SiO2/Ti/Pt/ZnO(Al/Pt(dishes fabricated memristive cells and preliminary current-voltage curves were acquired.

  20. Sol-gel synthesis and characterization of undoped and Al-doped ZnO thin films for memristive application

    Science.gov (United States)

    Ayana, Dawit G.; Prusakova, Valentina; Collini, Cristian; Nardi, Marco V.; Tatti, Roberta; Bortolotti, Mauro; Lorenzelli, Leandro; Chiappini, Andrea; Chiasera, Alessandro; Ferrari, Maurizio; Lunelli, Lorenzo; Dirè, Sandra

    2016-11-01

    The Sol-gel route is a versatile method to fabricate multi-layer, dense and homogeneous ZnO thin films with a controlled thickness and defects for a memristive application. In this work, sol-gel derived multi-layer undoped and Al-doped ZnO thin films were prepared by a spin-coating technique on SiO2/Ti/Pt and silica glass substrates. The effect of both Al doping and curing conditions on the structural and morphological features of ZnO films was investigated by complementary techniques, including electron microscopy, atomic force microscopy, X-ray photoelectron spectroscopy, micro-Raman spectroscopy, and X-ray diffraction analysis. Electrical measurements were performed on SiO2/Ti/Pt/ZnO/Pt(dishes) and SiO2/Ti/Pt/ZnO(Al)/Pt(dishes) fabricated memristive cells and preliminary current-voltage curves were acquired.

  1. The optical properties and applications of AlN thin films prepared by a helicon sputtering system

    CERN Document Server

    Chiu, W Y; Kao, H L; Jeng, E S; Chen, J S; Jaing, C C

    2002-01-01

    AlN thin films were grown on SiO sub 2 /Si and quartz substrates using a helicon sputtering system. The dependence of film quality on growth parameters, such as total sputtering pressure, substrate temperature, and nitrogen concentration has been studied. There is a good correlation of thin film crystallinity addressed by x-ray diffraction (XRD) and spectroscopic ellipsometer. The optimized films exhibit highly oriented, with only (002) peak shown in a theta-2 theta scan XRD pattern, and extremely smooth surface with rms roughness of 2 Aa. The extinction coefficient of the film was 4x10 sup - sup 4 , which is lower than that of AlN films grown by conventional sputtering. Double-layer antireflection (DLAR) coating using AlN and Al sub 3 O sub 3 grown on quartz has been demonstrated. The transmittance of DLAR was high as 96% compared to 93% of bare substrates with the measurement error less than 0.2%. AlN films prepared by Helicon sputtering thus are potential for optical application.

  2. Host thin films incorporating nanoparticles

    Science.gov (United States)

    Qureshi, Uzma

    The focus of this research project was the investigation of the functional properties of thin films that incorporate a secondary nanoparticulate phase. In particular to assess if the secondary nanoparticulate material enhanced a functional property of the coating on glass. In order to achieve this, new thin film deposition methods were developed, namely use of nanopowder precursors, an aerosol assisted transport technique and an aerosol into atmospheric pressure chemical vapour deposition system. Aerosol assisted chemical vapour deposition (AACVD) was used to deposit 8 series of thin films on glass. Five different nanoparticles silver, gold, ceria, tungsten oxide and zinc oxide were tested and shown to successfully deposit thin films incorporating nanoparticles within a host matrix. Silver nanoparticles were synthesised and doped within a titania film by AACVD. This improved solar control properties. A unique aerosol assisted chemical vapour deposition (AACVD) into atmospheric pressure chemical vapour deposition (APCVD) system was used to deposit films of Au nanoparticles and thin films of gold nanoparticles incorporated within a host titania matrix. Incorporation of high refractive index contrast metal oxide particles within a host film altered the film colour. The key goal was to test the potential of nanopowder forms and transfer the suspended nanopowder via an aerosol to a substrate in order to deposit a thin film. Discrete tungsten oxide nanoparticles or ceria nanoparticles within a titanium dioxide thin film enhanced the self-cleaning and photo-induced super-hydrophilicity. The nanopowder precursor study was extended by deposition of zinc oxide thin films incorporating Au nanoparticles and also ZnO films deposited from a ZnO nanopowder precursor. Incorporation of Au nanoparticles within a VO: host matrix improved the thermochromic response, optical and colour properties. Composite VC/TiC and Au nanoparticle/V02/Ti02 thin films displayed three useful

  3. A novel synthesis of tin oxide thin films by the sol-gel process for optoelectronic applications

    Energy Technology Data Exchange (ETDEWEB)

    Marikkannan, M. [Department of Materials Science, School of Chemistry, Madurai Kamaraj University, Tamilnadu, Madurai-625021 (India); Vishnukanthan, V. [Department of Physics, Centre for Materials Science and Nanotechnology, University of Oslo, P.O. Box 1126 Blindern, N-0318 Oslo (Norway); Vijayshankar, A. [Department of Physics and Technology, University of Bergen, Allegaten 55, N-5007, Bergen (Norway); Mayandi, J., E-mail: jeyanthinath@yahoo.co.in [Department of Materials Science, School of Chemistry, Madurai Kamaraj University, Tamilnadu, Madurai-625021 (India); Department of Materials Science and Engineering, Michigan Technological University (United States); Pearce, J. M., E-mail: pearce@mtu.edu [Department of Materials Science and Engineering, Michigan Technological University (United States); Department of Electrical and Computer Engineering, Michigan Technological University (United States)

    2015-02-15

    A novel and simple chemical method based on sol-gel processing was proposed to deposit metastable orthorhombic tin oxide (SnOx) thin films on glass substrates at room temperature. The resultant samples are labeled according to the solvents used: ethanol (SnO-EtOH), isopropanol (SnO-IPA) and methanol (SnO-MeOH). The variations in the structural, morphological and optical properties of the thin films deposited using different solvents were characterized by X-ray diffraction, atomic force microscopy, Raman spectroscopy, Fourier transform infrared (FTIR) spectroscopy, UV-vis spectroscopy and photoluminescence (PL) analysis. The XRD patterns confirm that all the films, irrespective of the solvents used for preparation, were polycrystalline in nature and contained a mixed phases of tin (II) oxide and tin (IV) oxide in a metastable orthorhombic crystal structure. FTIR spectra confirmed the presence of Sn=O and Sn-O in all of the samples. PL spectra showed a violet emission band centered at 380 nm (3.25 eV) for all of the solvents. The UV-vis spectra indicated a maximum absorption band shown at 332 nm and the highest average transmittance around 97% was observed for the SnO-IPA and SnO-MeOH thin film samples. The AFM results show variations in the grain size with solvent. The structural and optical properties of the SnO thin films indicate that this method of fabricating tin oxide is promising and that future work is warranted to analyze the electrical properties of the films in order to determine the viability of these films for various transparent conducting oxide applications.

  4. A novel synthesis of tin oxide thin films by the sol-gel process for optoelectronic applications

    Directory of Open Access Journals (Sweden)

    M. Marikkannan

    2015-02-01

    Full Text Available A novel and simple chemical method based on sol-gel processing was proposed to deposit metastable orthorhombic tin oxide (SnOx thin films on glass substrates at room temperature. The resultant samples are labeled according to the solvents used: ethanol (SnO-EtOH, isopropanol (SnO-IPA and methanol (SnO-MeOH. The variations in the structural, morphological and optical properties of the thin films deposited using different solvents were characterized by X-ray diffraction, atomic force microscopy, Raman spectroscopy, Fourier transform infrared (FTIR spectroscopy, UV-vis spectroscopy and photoluminescence (PL analysis. The XRD patterns confirm that all the films, irrespective of the solvents used for preparation, were polycrystalline in nature and contained a mixed phases of tin (II oxide and tin (IV oxide in a metastable orthorhombic crystal structure. FTIR spectra confirmed the presence of Sn=O and Sn-O in all of the samples. PL spectra showed a violet emission band centered at 380 nm (3.25 eV for all of the solvents. The UV-vis spectra indicated a maximum absorption band shown at 332 nm and the highest average transmittance around 97% was observed for the SnO-IPA and SnO-MeOH thin film samples. The AFM results show variations in the grain size with solvent. The structural and optical properties of the SnO thin films indicate that this method of fabricating tin oxide is promising and that future work is warranted to analyze the electrical properties of the films in order to determine the viability of these films for various transparent conducting oxide applications.

  5. An investigation of flow-limited field-injection electrostatic spraying (FFESS) and its applications to thin film deposition

    Science.gov (United States)

    Singh, Ravindra Pratap

    Electrostatic spraying is the process of controlled disruption of a liquid surface due to excess surface charge density. The technique has found applications in a wide range of fields from agricultural sprays to fuel injectors to colloidal thrusters for space vehicle propulsion. Over the past 20 years, the technique has been intensely studied in material processing for synthesis of ceramic and metal powders, nanoparticles and thin films. The importance of the technique lies in its simple setup, high deposition efficiency, and ambient atmosphere operation. In conventional electrostatic spraying (CESS), one uses a conducting nozzle to charge the liquid, mostly by induction charging. CESS is therefore restricted to the single jet mode of spraying which occurs at low spray currents. It lacks stability and reproducibility in the high current, multiple jet regime, which can generate much finer sprays. In flow-limited field-injection electrostatic spraying (FFESS), one uses a field-injection electrode to stably and controllably inject higher currents into the liquid, a la Fowler-Nordheim, using an otherwise insulating nozzle. This way, it is possible to stably electrospray in the multiple jet mode. In addition to producing much finer sprays, the multi-jet mode atomizes liquids at higher rates, and spreads the spray over a wider region and more uniformly than single jet sprays, thus paving way for large-area uniform thin film deposition. A simple yet comprehensive theory is formulated to describe the multi jet formation. The theory, which is based on the energy minimization principle, takes into account, for the first time, the interactions between charged jets which leads to saturation in the number of jets at high spray currents. The possibility of using an array of nozzles to obtain uniform large-area high-throughput thin film deposition is also investigated. A large number of FFESS nozzles with alternating positive and negative polarities arranged in a periodic 2

  6. Thin nanostructured crystalline TiO{sub 2} films and their applications in solar cells

    Energy Technology Data Exchange (ETDEWEB)

    Cheng Yajun

    2007-06-15

    Research on thin nanostructured crystalline TiO{sub 2} films has attracted considerable interests because of their intriguing physical properties and potential applications in photovoltaics. Nanostructured TiO{sub 2} film plays an important role in the TiO{sub 2} based dye-sensitized solar cells because they act as a substrate for the adsorption of dye molecules and a matrix for the transportation of electrons as well. Thus they can influence the solar cell performance significantly. Consequently, the control of the morphology including the shape, size and size distribution of the TiO{sub 2} nanostructures is critical to tune and optimize the performance of the solar cells. To control the TiO{sub 2} morphology, a strategy using amphiphilic block copolymer as templating agent coupled with sol-gel chemistry has been applied. Especially, a good-poor solvent pair induced phase separation process has been developed to guide the microphase separation behavior of the block copolymers. The amphiphilic block copolymers used include polystyrene-block-poly (ethylene oxide) (PS-b-PEO), poly (methyl methacrylate)-block-poly (ethylene oxide) (PMMA-b-PEO), and poly (ethylene oxide)-block-polystyrene-block-poly (ethylene oxide) (PEO-b-PS-b-PEO). The block copolymer undergoes a good-poor-solvent pair induced phase separation in a mixed solution of 1, 4-dioxane or N, N-dimethyl formamide (DMF), concentrated hydrochloric acid (HCl) and Titanium tetraisopropoxide (TTIP). Specifically, in the system of PS-b-PEO, a morphology phase diagram of the inorganic-copolymer composite films was mapped by adjusting the weight fractions among 1, 4-dioxane, HCl, and TTIP in solution. The amorphous TiO{sub 2} within the titania-block copolymer composite films was crystallized by calcination at temperatures above 400 C, where the organic block copolymer was simultaneously burned away. This strategy is further extended to other amphiphilic block copolymers of PMMA-b-PEO and PEO-b-PS-b-PEO, where the

  7. The development of Tl-2212 based superconducting thin films for microwave applications

    CERN Document Server

    Hyland, D M C

    2001-01-01

    This thesis attempts to develop the understanding of the two-stage ex-situ processing of Tl sub 2 Ba sub 2 CaCu sub 2 O (Tl-2212) thin films on LaAlO sub 3 substrates. Initially a thallium-free precursor film is deposited by sputtering, this is then annealed in a sealed crucible containing a thallium source to produce the final crystalline film. An investigation into the correlation of physical characteristics of the films with their microwave properties is presented. High reproducibility of processing was achieved for 1cm sup 2 size films with measured R sub s < 0.5m OMEGA. Strong dependence of the microwave properties was found with film thickness and growth morphology of the crystalline film. A good correlation of R sub s was seen with defect density, greater numbers of defects giving higher R sub s values. Problems were encountered in scaling up the process to fabricate 2-inch diameter films, initially limited by the increased defect density associated with a larger surface area. Additionally when usin...

  8. Investigations on nonlinear optical properties of electron beam treated Gd:ZnO thin films for photonic device applications

    Science.gov (United States)

    Spoorthi, K.; Pramodini, S.; Kityk, I. V.; Abd-Lefdil, M.; Sekkati, M.; El Fakir, A.; Rao, Ashok; Sanjeev, Ganesh; Poornesh, P.

    2017-06-01

    In this article, we report the third-order nonlinear optical properties of electron beam irradiated gadolinium-doped zinc oxide (GZO) thin films prepared using the spray pyrolysis deposition technique. GZO thin films were treated with an electron beam from a variable energy microtron accelerator at dose rates ranging from 1-5 kGy. Nonlinear optical measurements were conducted by employing the single beam Z-scan technique. A continuous wave He-Ne laser operating at 633 nm was used as the source of excitation. Closed aperture Z-scan results reveal that the films exhibit self-defocusing nonlinearity. Open aperture Z-scan results exhibit a switching over phenomena of reverse saturable absorption to saturable absorption for thin film irradiated at 3 kGy, indicating the influence of electron beams on optical nonlinearity. The significant change in third-order nonlinear optical susceptibility χ (3) ranging from 2.14  ×  10-3 to 3.12  ×  10-3 esu is attributed to the effect of electron beam irradiation. The study shows that the nonlinear coefficients of GZO films can be tuned by electron beams for use in nonlinear optical device applications.

  9. Sn-doped ZnO nanocrystalline thin films with enhanced linear and nonlinear optical properties for optoelectronic applications

    Science.gov (United States)

    Ganesh, V.; Yahia, I. S.; AlFaify, S.; Shkir, Mohd.

    2017-01-01

    In the current work, nanocrystalline undoped and Sn doped ZnO thin films with different doping concentrations (1, 3, 5, 7 at%) have been deposited on glass substrate by low cost spin coating technique. The strong effect of Sn doping on structural, morphological, optical, nonlinear properties have been observed. X-ray diffraction study revealed that all the thin films are preferentially grown along (002) plane. The crystallite size is found to be increased with increasing the concentration of Sn, similar behavior was observed by atomic force microscopy analysis. Optical study shows that the prepared thin films are highly transparent. The direct optical band gap was calculate and found to be 3.16, 3.20, 3.22, 3.34, 3.18 eV for pure and doped films respectively. The refractive index, linear susceptibility, nonlinear absorption coefficient, nonlinear susceptibility and nonlinear refractive index were calculated. Furthermore, the third order nonlinear optical properties are investigated using Z-scan technique and their values are found to be -3.75×10-8 cm2/W, -3.76×10-3 cm/W and 0.65×10-3 esu for 7% Sn doped ZnO, respectively. There is a good correlation between theoretical and experimental third order nonlinear properties and higher values shows that the deposited films are may be applied in nonlinear optical applications.

  10. Argon plasma inductively coupled plasma reactive ion etching study for smooth sidewall thin film lithium niobate waveguide application

    Science.gov (United States)

    Ulliac, G.; Calero, V.; Ndao, A.; Baida, F. I.; Bernal, M.-P.

    2016-03-01

    Lithium Niobate (LN) exhibits unique physical properties such as remarkable electro-optical coefficients and it is thus an excellent material for a wide range of fields like optic communications, lasers, nonlinear optical applications, electric field optical sensors etc. In order to further enhance the optical device performance and to be competitive with silicon photonics, sub-micrometric thickness lithium niobate films are crucial. A big step has been achieved with the development of LN thin films by using smart cut technology and wafer bonding and these films are nowadays available in the market. However, it is a challenge to obtain the requirements of the high quality thin LN film waveguide. In this letter, we show smooth ridge waveguides fabricated on 700 nm thickness thin film lithium niobate (TFLN). The fabrication has been done by developing and optimizing three steps of the technological process, the mask fabrication, the plasma etching, and a final cleaning wet etching step in order to remove the lithium niobate redeposition on the side walls. We have obtained single mode propagation with light overall losses of only 5 dB/cm.

  11. First Thin Film Festival

    Science.gov (United States)

    Samson, Philippe

    2005-05-01

    The constant evolution of the satellite market is asking for better technical performances and reliability for a reduced cost. Solar array is in front line of this challenge. This can be achieved by present technologies progressive improvement in cost reduction or by technological breakthrough. To reach an effective End Of Live performance100 W/kg of solar array is not so easy, even if you suppose that the mass of everything is nothing! Thin film cells are potential candidate to contribute to this challenge with certain confidence level and consequent development plan validation and qualification on ground and flight. Based on a strong flight heritage in flexible Solar Array design, the work has allowed in these last years, to pave the way on road map of thin film technologies . This is encouraged by ESA on many technological contracts put in concurrent engineering. CISG was selected cell and their strategy of design, contributions and results will be presented. Trade-off results and Design to Cost solutions will discussed. Main technical drivers, system design constraints, market access, key technologies needed will be detailed in this paper and the resulting road-map and development plan will be presented.

  12. Pulsed laser deposition of chromium-doped zinc selenide thin films for mid-infrared applications

    Science.gov (United States)

    Williams, J. E.; Camata, R. P.; Fedorov, V. V.; Mirov, S. B.

    2008-05-01

    We have grown Cr doped ZnSe thin films by pulsed laser deposition on GaAs, sapphire and Si substrates through KrF excimer laser ablation of hot-pressed targets containing appropriate stoichiometric mixtures of Zn, Se, and Cr species and hot-pressed ceramic targets made of ZnSe and CrSe powders in vacuum and in an He background environment (10-4 Torr). Deposited films were analyzed using X-ray diffraction to determine crystallinity and energy dispersive X-ray fluorescence to confirm Cr incorporation into the films. Photoluminescence measurements on the films show intracenter Cr2+ emission in the technologically important 2 2.6 μm spectral range.

  13. PbS Thin Films for Photovoltaic Applications Obtained by Non-Traditional Chemical Bath Deposition

    Directory of Open Access Journals (Sweden)

    Pérez-García Claudia Elena

    2015-01-01

    Full Text Available To optimize cost-efficiency relation for thin film solar cells, we explore the recently developed versions of chemical deposition of semiconductor films, together with classic CBD (Chemical Bath Deposition: SILAR (Successive Ionic Layer Adsorption and Reaction and PCBD (Photo Chemical Bath Deposition, all of them ammonia-free and ecologically friendly. The films of CdS and PbS were made, and experimental solar cells with CdS window layer and PbS absorber elaborated. We found that band gap of PbS films can be monitored by deposition process due to porosity-induced quantum confinement which depends on the parameters of the process. We expect that the techniques employed can be successfully used for production of optoelectronic devices.

  14. Zinc-Based Semiconductors/Polymer Thin Films Junction for Photovoltaic Application

    Directory of Open Access Journals (Sweden)

    Souad Al-bat’hi

    2012-01-01

    Full Text Available Thin films of ZnO and ZnTe semiconductors were deposited on ITO conducting glass substrates by sputtering and electrodeposition techniques, respectively. On the other hand, thin films of ion conducting solid polymer electrolyte were prepared by solution cast technique. The polymer is a blend of 50 wt% polyethylene oxide and 50 wt% chitosan. To provide redox couple (I−/I3−, the polymer was complexed with ammonium iodide NH4I with addition of few crystals of iodine I2. Ammonium iodide NH4I was added to the solution in different amounts (wt% weight ratios to supply the charge carriers for the polymer electrolytes. The highest ionic conductivity of the polymer electrolyte was 1.18×10−5 S cm−1 at room temperature. Structural and optical properties of the semiconductor thin films were characterized by X-ray diffractometer and UV-Vis spectrophotometer. The XRD shows crystalline structures for both ZnO and ZnTe thin films. The UV-Vis shows direct energy gaps EZnO of 3.1 eV and EZnTe of 2.2 eV. The polymer film was sandwiched between the ZnO and ZnTe semiconductors to form ITO/ZnO/polymer/ZnTe/ITO double-junction photovoltaic cell, and the photovoltaic properties were studied. The highest open-circuit voltage oc, short-circuit current density sc, and fill factor FF of the fabricated cells are 0.5 V, 55 μA cm−2, and 27%, respectively.

  15. Highly stretchable wrinkled gold thin film wires

    Science.gov (United States)

    Kim, Joshua; Park, Sun-Jun; Nguyen, Thao; Chu, Michael; Pegan, Jonathan D.; Khine, Michelle

    2016-02-01

    With the growing prominence of wearable electronic technology, there is a need to improve the mechanical reliability of electronics for more demanding applications. Conductive wires represent a vital component present in all electronics. Unlike traditional planar and rigid electronics, these new wearable electrical components must conform to curvilinear surfaces, stretch with the body, and remain unobtrusive and low profile. In this paper, the piezoresistive response of shrink induced wrinkled gold thin films under strain demonstrates robust conductive performance in excess of 200% strain. Importantly, the wrinkled metallic thin films displayed negligible change in resistance of up to 100% strain. The wrinkled metallic wires exhibited consistent performance after repetitive strain. Importantly, these wrinkled thin films are inexpensive to fabricate and are compatible with roll to roll manufacturing processes. We propose that these wrinkled metal thin film wires are an attractive alternative to conventional wires for wearable applications.

  16. Highly stretchable wrinkled gold thin film wires

    Energy Technology Data Exchange (ETDEWEB)

    Kim, Joshua, E-mail: joshuk7@uci.edu; Park, Sun-Jun; Nguyen, Thao [Department of Chemical Engineering and Materials Science, University of California, Irvine, California 92697 (United States); Chu, Michael [Department of Biomedical Engineering, University of California, Irvine, California 92697 (United States); Pegan, Jonathan D. [Department of Materials and Manufacturing Technology, University of California, Irvine, California 92697 (United States); Khine, Michelle, E-mail: mkhine@uci.edu [Department of Chemical Engineering and Materials Science, University of California, Irvine, California 92697 (United States); Department of Biomedical Engineering, University of California, Irvine, California 92697 (United States)

    2016-02-08

    With the growing prominence of wearable electronic technology, there is a need to improve the mechanical reliability of electronics for more demanding applications. Conductive wires represent a vital component present in all electronics. Unlike traditional planar and rigid electronics, these new wearable electrical components must conform to curvilinear surfaces, stretch with the body, and remain unobtrusive and low profile. In this paper, the piezoresistive response of shrink induced wrinkled gold thin films under strain demonstrates robust conductive performance in excess of 200% strain. Importantly, the wrinkled metallic thin films displayed negligible change in resistance of up to 100% strain. The wrinkled metallic wires exhibited consistent performance after repetitive strain. Importantly, these wrinkled thin films are inexpensive to fabricate and are compatible with roll to roll manufacturing processes. We propose that these wrinkled metal thin film wires are an attractive alternative to conventional wires for wearable applications.

  17. Study of Thermal properties of VO2 and multilayer VO2 thin films for application in Thermal Switches

    Science.gov (United States)

    Zhu, Gaohua

    Ultrafast nature of the phase transition near room temperature in VO2 makes it attractive material for applications in electronics and optical devices however utilization of corresponding drastic change in thermo-physical properties are rarely reported. In this study we investigate thermal and electronic properties of VO2 thin films on various substrates across the transition temperature to seek possibility of utilizing VO2 based thermal switches for applications in thermal devices. In addition, the interfacial heat transfer in VO2/metal multilayer thin film is mediated by phonons at low temperature, and when temperature is elevated beyond phase transition temperature, the interface thermal conductance is mediated mainly by both phons and electrons. VO2-multilayers approach is studied to utilize the switching interface thermal conductance in order to obtain higher thermal conductivity switch ratio than what can be achieved in intrinsic VO2. Thermal conductivities and interface thermal conductance of VO2 and VO2 multilayer thin films are measured using the time-domain thermoreflectance (TDTR) method. We will discuss interplay of phononic and electronic component to thermal conductivity in the light of Wiedemann-Franz law across the metal to insulator state of VO2 films.

  18. Wavy channel Thin Film Transistor for area efficient, high performance and low power applications

    KAUST Repository

    Hanna, Amir

    2014-06-01

    We report a new Thin Film Transistor (TFT) architecture that allows expansion of the device width using wavy (continuous without separation) fin features - termed as wavy channel (WC) architecture. This architecture allows expansion of transistor width in a direction perpendicular to the substrate, thus not consuming extra chip area, achieving area efficiency. The devices have shown for a 13% increase in the device width resulting in a maximum 2.4x increase in \\'ON\\' current value of the WCTFT, when compared to planar devices consuming the same chip area, while using atomic layer deposition based zinc oxide (ZnO) as the channel material. The WCTFT devices also maintain similar \\'OFF\\' current value, similar to 100 pA, when compared to planar devices, thus not compromising on power consumption for performance which usually happens with larger width devices. This work offers a pragmatic opportunity to use WCTFTs as backplane circuitry for large-area high-resolution display applications without any limitation any TFT materials.

  19. Material characteristics of perovskite manganese oxide thin films for bolometric applications

    Energy Technology Data Exchange (ETDEWEB)

    Goyal, A.; Rajeswari, M.; Shreekala, R.; Lofland, S.E.; Bhagat, S.M.; Boettcher, T.; Kwon, C.; Ramesh, R.; Venkatesan, T. [Center for Superconductivity Research, Department of Physics, University of Maryland, College Park, Maryland 20742 (United States)

    1997-10-01

    We are optimizing thin films of perovskite manganese oxides for bolometric applications. We have studied the relevant material characteristics of several members of this family namely, La{sub 0.7}Ba{sub 0.3}MnO{sub 3}, La{sub 0.7}Sr{sub 0.3}MnO{sub 3}, La{sub 0.7}Ca{sub 0.3}MnO{sub 3}, and Nd{sub 0.7}Sr{sub 0.3}MnO{sub 3}. Here, we discuss issues related to the choice of material, the influence of deposition parameters, and postdeposition heat treatments on the relevant characteristics such as the resistivity-peak temperature (T{sub p}) and the temperature coefficient of resistance (TCR). For a given material, a higher peak temperature implies a larger temperature coefficient of resistance. In contrast, on comparing different material systems, the TCR tends to decrease as T{sub p} increases. {copyright} {ital 1997 American Institute of Physics.}

  20. Wide-area thin film metal-semiconductor-metal photodetectors for lidar applications

    Science.gov (United States)

    Morrison, Charles B.; Glinz, Andreas P.; Zhu, Zheng; Bechtel, James H.; Frimel, Steven M.; Roenker, Kenneth P.

    1998-04-01

    Novel interdigitated metal-semiconductor-metal structures offer new approaches for the development of broad-area, high-speed photodetectors to be used in optical free space communications and light detection and ranging applications. Inherent advantages include: lower capacitance than typical p-i-n structures, a wide dynamic range, and ease of fabrication. We have constructed broad area metal- semiconductor-metal photodetectors (MSM-PDs) by means of epitaxial liftoff and grafting technologies. Two computer models have been used to examine the effects of design parameters on the performance of broad-area, high-speed MSM- PD devices. The first model indicates that inverting the membrane so that the electrodes are placed between the non- conducting host substrate and the semiconductor material improves the signal-to-noise ration of the device, expanding its dynamic range. This model suggests that processing of the backside of the semiconductor material with antireflection coatings further improves device performance. Carrier collection behavior described by the second model suggests new electrode configurations for improved high speed operation which can only be applied to an inverted MSM-PD carried on a thin film membrane. A number of different fully passivated large area MSM-PD configurations have been fabricated and tested. Initial dark current data are compared favorably to published results.

  1. Thin Film Inorganic Electrochemical Systems.

    Science.gov (United States)

    1995-07-01

    determined that thin film cathodes of LiCoO2 can be readily performed by either spray pyrolysis or spin coating . These cathodes are electrochemically...active. We have also determined that thin film anodes of Li4Ti5O12 can be prepared by spray pyrolysis or spin coating . These anodes are also

  2. Thin-film solar cell

    NARCIS (Netherlands)

    Metselaar, J.W.; Kuznetsov, V.I.

    1998-01-01

    The invention relates to a thin-film solar cell provided with at least one p-i-n junction comprising at least one p-i junction which is at an angle alpha with that surface of the thin-film solar cell which collects light during operation and at least one i-n junction which is at an angle beta with

  3. Chemical synthesis of Fe{sub 2}O{sub 3} thin films for supercapacitor application

    Energy Technology Data Exchange (ETDEWEB)

    Kulal, P.M.; Dubal, D.P.; Lokhande, C.D. [Holography and Material Research Laboratory, Department of Physics, Shivaji University, Kolhapur 416004, M.S. (India); Fulari, V.J., E-mail: vijayfulari@gmail.com [Holography and Material Research Laboratory, Department of Physics, Shivaji University, Kolhapur 416004, M.S. (India)

    2011-02-03

    Research highlights: > Simple chemical synthesis of Fe{sub 2}O{sub 3}. > Formation of amorphous and hydrous Fe{sub 2}O{sub 3}. > Potential candidate for supercapacitors. - Abstract: Fe{sub 2}O{sub 3} thin films have been prepared by novel chemical successive ionic layer adsorption and reaction (SILAR) method. Further these films were characterized for their structural, morphological and optical properties by means of X-ray diffraction (XRD), Fourier transform infrared (FTIR) spectrum, scanning electron microscopy (SEM), wettability test and optical absorption studies. The XRD pattern showed that the Fe{sub 2}O{sub 3} films exhibit amorphous in nature. Formation of iron oxide compound was confirmed from FTIR studies. The optical absorption showed existence of direct optical band gap of energy 2.2 eV. Fe{sub 2}O{sub 3} film surface showed superhydrophilic nature with water contact angle less than 10{sup o}. The supercapacitive properties of Fe{sub 2}O{sub 3} thin film investigated in 1 M NaOH electrolyte showed supercapacitance of 178 F g{sup -1} at scan rate 5 mV/s.

  4. Recent trends in preparation and application of carbon nanotube-graphene hybrid thin films

    Science.gov (United States)

    Thanh Dang, Van; Dung Nguyen, Duc; Thanh Cao, Thi; Le, Phuoc Huu; Tran, Dai Lam; Phan, Ngoc Minh; Chuc Nguyen, Van

    2016-09-01

    The combination of one-dimensional (1D) carbon nanotubes (CNTs) and two-dimensional (2D) graphene materials to generate three-dimensional (3D) carbon nanotube-graphene hybrid thin films (CNGHTFs) has attracted great attention owing to their intriguing properties via the synergistic effects of these two materials on their electrical, optical, and electrochemical properties in comparison with their individual components. This review aims to provide a brief introduction of recent trends in preparation methodologies and some outstanding applications of CNGHTFs. It contains two main scientific subjects. The first of these is the research on preparation techniques of CNGHTFs, including reduction agent-assisted mechanical blending of reduced graphene oxide (rGO) and CNTs, hybridization methods for layer-by-layer (LBL) assembly of CNTs and rGO sheets, multi-step methods using combinations of a solution and chemical vapor deposition (CVD) processing, one-step growth of CNGHTFs by the CVD method, and modified CVD methods via thermal deposition of carbon source on catalyst surfaces. The advantages and disadvantages of the preparation methods of CNGHTFs are presented and discussed in detail. The second scientific subject of the review is the research on some outstanding applications of CNGHTFs in various research fields, including transparent conductors, electron field emitters, field-effect transistors, biosensors and supercapacitors. In most cases, the CNGHTFs showed superior performances than those of the pristine GO/graphene or CNT materials. Therefore, the CNGHTFs exhibit as high-potential materials for various practical applications. Opportunites and challenges in the fields are also presented.

  5. Sol-Gel Deposited Porogen Based Porous Low-k Thin Films for Interlayer Dielectric Application in ULSI Circuits

    Directory of Open Access Journals (Sweden)

    Yogesh S. Mhaisagar

    2012-10-01

    Full Text Available Porous SiO2 low-k thin films with low dielectric constant were successfully deposited by sol-gel spin-coating technique. The films were deposited by using Tertaethylorthosilicate (TEOS as a precursor solution and HF was used as an acid catalyst solution. The Tween80 with different volumetric concentrations i.e. 0.0 ml, 0.5 ml and 0.7 ml was used as a pore generator to lower the dielectric constant of the films by introducing the porosity in the films matrix. The thickness and refractive index (RI of low-k thin films have been measured by Ellipsometer. The refractive index and thickness of the films observed to be decreasing with increase in Tween80 concentration. The chemical bonding structures of films were analyzed by using Fourier transform infrared spectroscopy (FT-IR spectroscopy and the stretching, bending and rocking peaks appear at 1077 cm – 1, 967  cm – 1, 447  cm – 1 respectively confirm the formation of Si-O-Si network. The RIs of the films deposited at 0 ml, 0.5 ml and at 0.7 ml of Tween80 concentration are found to be 1.34, 1.26, and 1.20 respectively. Based on RI values of the films, the porosity percentage, density and dielectric constant have been calculated by standard formulation method. The increase in porosity percentage of films from 3 % to 55 % with increase in Tween80 concentration reveals that, the most of the hydroxyl group and porogen get evaporated and form more voids in the films. This increase in porosity percentage causes to lower the dielectric constant of films and was found to be 2.26 at the 0.7 ml of Tween80 concentration. Such porogen based low dialectic constant thin films can be suitable for interlayer dielectric (ILD applications in ULSI circuits.

  6. Thin solid-lubricant films in space

    Science.gov (United States)

    Roberts, E. W.

    Low-friction films of thickness as low as 1 micron, created through sputter-deposition of low shear strength materials, are required in spacecraft applications requiring low power dissipation, such as cryogenic devices, and low torque noise, such as precision-pointing mechanisms. Due to their thinness, these coatings can be applied to high precision-machined tribological components without compromising their functional accuracy. Attention is here given to the cases of thin solid films for ball bearings, gears, and journal bearings.

  7. Chromium and Ruthenium-Doped Zinc Oxide Thin Films for Propane Sensing Applications

    Science.gov (United States)

    Gómez-Pozos, Heberto; González-Vidal, José Luis; Torres, Gonzalo Alberto; Rodríguez-Baez, Jorge; Maldonado, Arturo; de la Luz Olvera, María; Acosta, Dwight Roberto; Avendaño-Alejo, Maximino; Castañeda, Luis

    2013-01-01

    Chromium and ruthenium-doped zinc oxide (ZnO:Cr) and (ZnO:Ru) thin solid films were deposited on soda-lime glass substrates by the sol-gel dip-coating method. A 0.6 M solution of zinc acetate dihydrate dissolved in 2-methoxyethanol and monoethanolamine was used as basic solution. Chromium (III) acetylacetonate and Ruthenium (III) trichloride were used as doping sources. The Ru incorporation and its distribution profile into the films were proved by the SIMS technique. The morphology and structure of the films were studied by SEM microscopy and X-ray diffraction measurements, respectively. The SEM images show porous surfaces covered by small grains with different grain size, depending on the doping element, and the immersions number into the doping solutions. The sensing properties of ZnO:Cr and ZnO:Ru films in a propane (C3H8) atmosphere, as a function of the immersions number in the doping solution, have been studied in the present work. The highest sensitivity values were obtained for films doped from five immersions, 5.8 and 900, for ZnO:Cr and ZnO:Ru films, respectively. In order to evidence the catalytic effect of the chromium (Cr) and ruthenium (Ru), the sensing characteristics of undoped ZnO films are reported as well. PMID:23482091

  8. Chromium and Ruthenium-Doped Zinc Oxide Thin Films for Propane Sensing Applications

    Directory of Open Access Journals (Sweden)

    Maximino Avendaño-Alejo

    2013-03-01

    Full Text Available Chromium and ruthenium-doped zinc oxide (ZnO:Cr and (ZnO:Ru thin solid films were deposited on soda-lime glass substrates by the sol-gel dip-coating method. A 0.6 M solution of zinc acetate dihydrate dissolved in 2-methoxyethanol and monoethanolamine was used as basic solution. Chromium (III acetylacetonate and Ruthenium (III trichloride were used as doping sources. The Ru incorporation and its distribution profile into the films were proved by the SIMS technique. The morphology and structure of the films were studied by SEM microscopy and X-ray diffraction measurements, respectively. The SEM images show porous surfaces covered by small grains with different grain size, depending on the doping element, and the immersions number into the doping solutions. The sensing properties of ZnO:Cr and ZnO:Ru films in a propane (C3H8 atmosphere, as a function of the immersions number in the doping solution, have been studied in the present work. The highest sensitivity values were obtained for films doped from five immersions, 5.8 and 900, for ZnO:Cr and ZnO:Ru films, respectively. In order to evidence the catalytic effect of the chromium (Cr and ruthenium (Ru, the sensing characteristics of undoped ZnO films are reported as well.

  9. Sol-gel-derived lead-magnesium-niobium titanate thin films for ultrahigh-value capacitor applications

    Energy Technology Data Exchange (ETDEWEB)

    Copuroglu, M; O' Brien, S; Winfield, R [Tyndall National Institute, Advanced Materials and Surfaces Group, Lee Maltings, Prospect Row, Cork (Ireland); Malic, B; Kuznik, B; Kosec, M [Jozef Stefan Institute, Electronic Ceramics Department, Jamova 39, 1000 Ljubljana (Slovenia); Zhu, X; Defay, E, E-mail: mehmet.copuroglu@tyndall.i [CEA, LETI, MINATEC, 17 Rue des Martyrs, F38054 Grenoble Cedex 9 (France)

    2010-02-15

    A Pb(Mg{sub 0.33}Nb{sub 0.67}){sub 0.65}Ti{sub 0.35}O{sub 3} material system was synthesized by the sol-gel method; thin films were deposited via the spin-coating technique, and processed using the rapid thermal annealing. Effects of preparation parameters, such as annealing temperature and atmosphere, on the phase composition, microstructure and electrical properties were identified. Morphologically uniform and crack-free films were obtained. Among the obtained films, the highest k value was found to be 1425 for the 380 nm thick film that was annealed at 750 deg. C in O{sub 2} indicating the suitability of this material system for ultrahigh-value capacitor applications.

  10. Thermal annealing and magnetic anisotropy of NiFe thin films on n{sup +}-Si for spintronic device applications

    Energy Technology Data Exchange (ETDEWEB)

    Lu, Q.H. [School of Physical Science and Technology, Lanzhou University, Lanzhou 730000 (China); Department of Physics, Semiconductor Photonics Research Center, Xiamen University, Xiamen 361005, People’s Republic of China (China); Gansu Key Laboratory of Sensor and Sensor Technology, Institute of Sensor Technology, Gansu Academy of Science, Lanzhou 730000 (China); Huang, R. [Department of Physics, Semiconductor Photonics Research Center, Xiamen University, Xiamen 361005, People’s Republic of China (China); Wang, L.S. [Department of Materials Science and Engineering, College of Materials, Xiamen University, Xiamen 361005 (China); Wu, Z.G., E-mail: zgwu@lzu.edu.cn [School of Physical Science and Technology, Lanzhou University, Lanzhou 730000 (China); Li, C., E-mail: lich@xmu.edu.cn [Department of Physics, Semiconductor Photonics Research Center, Xiamen University, Xiamen 361005, People’s Republic of China (China); Luo, Q. [Department of Materials Science and Engineering, College of Materials, Xiamen University, Xiamen 361005 (China); Zuo, S.Y. [School of Physical Science and Technology, Lanzhou University, Lanzhou 730000 (China); Li, J. [Department of Physics, Semiconductor Photonics Research Center, Xiamen University, Xiamen 361005, People’s Republic of China (China); Peng, D.L. [Department of Materials Science and Engineering, College of Materials, Xiamen University, Xiamen 361005 (China); Han, G.L. [Gansu Key Laboratory of Sensor and Sensor Technology, Institute of Sensor Technology, Gansu Academy of Science, Lanzhou 730000 (China); Yan, P.X. [School of Physical Science and Technology, Lanzhou University, Lanzhou 730000 (China)

    2015-11-15

    To ensure that the magnetic metal electrodes can meet the requirements of the spin injection, NiFe films prepared both on HfO{sub 2} dielectric layer and n{sup +}-Si directly by sputtering deposition, and treated by conventional furnace annealing and/or high vacuum magnetic field annealing were investigated. It was found that thermal annealing at 250 °C improved the crystalline quality and reduced surface roughness of the NiFe films, thus enhancing its saturation magnetization intensity. The 100 nm thick NiFe films had too large coercive force and saturation magnetization intensity in vertical direction to meet the requirements of Hanle curve detection. While, 30 nm thick NiFe films showed paramagnetic hysteresis loops in vertical direction, and the magnetization intensity of the sample after annealing at 250 °C for 30 min was less than 2% to the parallel when the external magnetic field was given between ±10 Oe. This was preferred to Hanle curve detection. The thin HfO{sub 2} dielectric layer between metal and Si partially suppressed the diffusion of Ni in NiFe into Si substrate and formation of NiSi, greatly enhancing the saturation magnetization intensity of the Al/NiFe/HfO{sub 2}/Si sample by thermal annealing. Those results suggest that Al/NiFe/HfO{sub 2}/Si structure, from the point view of magnetic electrodes, would be suitable for spin injection and detection applications. - Highlights: • The saturation magnetization intensity of NiFe thin-film was enhanced by thermal annealing. • A paramagnetic hysteresis loop of NiFe thin-film was observed in vertical direction. • The thin HfO{sub 2} dielectric layer between NiFe and Si partially suppressed the diffusion of Ni into Si.

  11. Optical and grain boundary potential characteristics of sulfurized BiFeO3 thin films for photovoltaic applications.

    Science.gov (United States)

    Lee, Seung Min; Cho, Yong Soo

    2016-04-01

    Sulfurized BiFeO3 (BFO) thin films have been investigated with the purpose of reducing their band gap for photovoltaic applications. A strong dependence of the degree of sulfurization on the structure and optical properties of the BFO thin films was observed. The sulfurization process substantially reduced the optical band gap from 2.83 eV for the reference sample to ∼1.90 eV in a sample sulfurized at 200 °C, a temperature at which the BFO phase was still dominant. The existence of the secondary Bi2S3 phase was found to be initiated from the film surface and became dominant at higher temperatures. XPS analysis suggests potential Bi-Fe(iii)-Fe(ii)-S-O compounds as a result of the change of the oxidation state of Fe with the progress of sulfurization. The sulfurized BFO film exhibited relatively higher positively charged grain boundaries than the reference film, suggesting its improved applicability in photovoltaic devices.

  12. Synthesis and characterization thin films of conductive polymer (PANI) for optoelectronic device application

    Science.gov (United States)

    Jarad, Amer N.; Ibrahim, Kamarulazizi; Ahmed, Nasser M.

    2016-07-01

    In this work we report preparation and investigation of structural and optical properties of polyaniline conducting polymer. By using sol-gel in spin coating technique to synthesize thin films of conducting polymer polyaniline (PANI). Conducting polymer polyaniline was synthesized by the chemical oxidative polymerization of aniline monomers. The thin films were characterized by technique: Hall effect, High Resolution X-ray diffraction (HR-XRD), Fourier transform infrared (FTIR) spectroscopy, Field emission scanning electron microscopy (FE-SEM), and UV-vis spectroscopy. Polyaniline conductive polymer exhibit amorphous nature as confirmed by HR-XRD. The presence of characteristic bonds of polyaniline was observed from FTIR spectroscopy technique. Electrical and optical properties revealed that (p-type) conductivity PANI with room temperature, the conductivity was 6.289×10-5 (Ω.cm)-1, with tow of absorption peak at 426,805 nm has been attributed due to quantized size of polyaniline conducting polymer.

  13. SILAR deposited TiO2 thin film for supercapacitor application

    Science.gov (United States)

    Deshmukh, P. R.; Lokhande, C. D.

    2013-06-01

    The paper presents the synthesis and characterization of Titanium dioxide (TiO2) thin films prepared by the simple and low cost successive ionic layer adsorption and reaction (SILAR) method. The TiO2 thin films are characterized by scanning electron microscopy (SEM), FT-IR, FT-Raman and UV-VIS spectroscopy techniques. The SEM study of TiO2 shows the cracked morphology on the substrate surface. The characteristic peaks of TiO2 are observed in the FT-IR and FT-Raman studies. The optical study shows band gap of 3.3 eV. The cyclic voltammetry study shows the specific capacitance of 16 F.g-1.

  14. The Electrical Characteristics of Aluminium Doped Zinc Oxide Thin Film for Humidity Sensor Applications

    Directory of Open Access Journals (Sweden)

    N. D. Md Sin

    2011-01-01

    Full Text Available The electrical characteristics of aluminum (Al doped zinc oxide (ZnO thin film for high sensitivity humidity sensors are presented. The effects of Al doping concentration at 0∼0.6 at % on the Al doped ZnO thin film properties were investigated using current-voltage measurement. The optical and structural properties were characterized using photoluminescence (PL, scanning emission microscope (SEM, and X-ray diffraction (XRD. Parameter 0.6 at % Aluminum doped show high sensitivity and suitable for humidity sensor. PL show an emissions band with two peaks centered at about 380 nm (ultra-violet (UV and 600 nm (green in a room temperature. The length of the nanorods increases as the doping concentration increases. XRD results show the intensity of the (002 peak decreased with the increasing of doping concentration.

  15. Synthesis and characterization thin films of conductive polymer (PANI) for optoelectronic device application

    Energy Technology Data Exchange (ETDEWEB)

    Jarad, Amer N., E-mail: amer78malay@yahoo.com.my; Ibrahim, Kamarulazizi, E-mail: kamarul@usm.my; Ahmed, Nasser M., E-mail: nas-tiji@yahoo.com [Nano-optoelectronic Research and Technology Laboratory School of physics, University of Sains Malaysia, 11800 Pulau Pinang (Malaysia)

    2016-07-06

    In this work we report preparation and investigation of structural and optical properties of polyaniline conducting polymer. By using sol-gel in spin coating technique to synthesize thin films of conducting polymer polyaniline (PANI). Conducting polymer polyaniline was synthesized by the chemical oxidative polymerization of aniline monomers. The thin films were characterized by technique: Hall effect, High Resolution X-ray diffraction (HR-XRD), Fourier transform infrared (FTIR) spectroscopy, Field emission scanning electron microscopy (FE-SEM), and UV-vis spectroscopy. Polyaniline conductive polymer exhibit amorphous nature as confirmed by HR-XRD. The presence of characteristic bonds of polyaniline was observed from FTIR spectroscopy technique. Electrical and optical properties revealed that (p-type) conductivity PANI with room temperature, the conductivity was 6.289×10{sup −5} (Ω.cm){sup −1}, with tow of absorption peak at 426,805 nm has been attributed due to quantized size of polyaniline conducting polymer.

  16. Polymorphous silicon thin films produced in dusty plasmas: application to solar cells

    Energy Technology Data Exchange (ETDEWEB)

    Roca i Cabarrocas, Pere; Chaabane, N; Kharchenko, A V; Tchakarov, S [Laboratoire de Physique des Interfaces et des Couches Minces (UMR 7647), Ecole Polytechnique, 91128 Palaiseau Cedex (France)

    2004-12-01

    We summarize our current understanding of the optimization of PIN solar cells produced by plasma enhanced chemical vapour deposition from silane-hydrogen mixtures. To increase the deposition rate, the discharge is operated under plasma conditions close to powder formation, where silicon nanocrystals contribute to the deposition of so-called polymorphous silicon thin films. We show that the increase in deposition rate can be achieved via an accurate control of the plasma parameters. However, this also results in a highly defective interface in the solar cells due to the bombardment of the P-layer by positively charged nanocrystals during the deposition of the I-layer. We show that decreasing the ion energy by increasing the total pressure or by using silane-helium mixtures allows us to increase both the deposition rate and the solar cells efficiency, as required for cost effective thin film photovoltaics.

  17. Polymorphous silicon thin films produced in dusty plasmas: application to solar cells

    Science.gov (United States)

    Cabarrocas, Pere Roca i.; Chaâbane, N.; Kharchenko, A. V.; Tchakarov, S.

    2004-12-01

    We summarize our current understanding of the optimization of PIN solar cells produced by plasma enhanced chemical vapour deposition from silane hydrogen mixtures. To increase the deposition rate, the discharge is operated under plasma conditions close to powder formation, where silicon nanocrystals contribute to the deposition of so-called polymorphous silicon thin films. We show that the increase in deposition rate can be achieved via an accurate control of the plasma parameters. However, this also results in a highly defective interface in the solar cells due to the bombardment of the P-layer by positively charged nanocrystals during the deposition of the I-layer. We show that decreasing the ion energy by increasing the total pressure or by using silane helium mixtures allows us to increase both the deposition rate and the solar cells efficiency, as required for cost effective thin film photovoltaics.

  18. Fabrication of (110)-one-axis-oriented perovskite-type oxide thin films and their application to buffer layer

    Science.gov (United States)

    Sato, Tomoya; Ichinose, Daichi; Kimura, Junichi; Inoue, Takaaki; Mimura, Takanori; Funakubo, Hiroshi; Uchiyama, Kiyoshi

    2016-10-01

    BaCe0.9Y0.1O3-δ (BCYO) and SrZr0.8Y0.2O3-δ (SZYO) thin films of perovskite-type oxides were deposited on (111)Pt/TiO x /SiO2/(100)Si substrates. X-ray diffraction patterns showed that the (110)-oriented BCYO and SZYO thin films were grown on (111)Pt/Si substrates directly without using any buffer layers. Thin films of SrRuO3 (SRO), a conductive perovskite-type oxide, were also deposited on those films and highly (110)-oriented SRO thin films were obtained. We believe that this (110)-oriented SRO works as a buffer layer to deposit (110)-oriented perovskite-type ferroelectric oxide thin films as well as a bottom electrode and can modify the ferroelectric properties of the oxide thin films by controlling their crystallographic orientations.

  19. New Application of the (G′/G-Expansion Method for Thin Film Equations

    Directory of Open Access Journals (Sweden)

    Wafaa M. Taha

    2013-01-01

    Full Text Available The (G′/G-expansion method is used for the first time to find traveling wave solutions for thin film equations, where it is found that the related balance numbers are not the usual positive integers. The closed-form solution obtained via this method is in good agreement with the previously obtained solutions of other researchers. It is also noted that, for appropriate parameters, new solitary waves solutions are found.

  20. Injection Laser Using Rare Earth Doped GaN Thin Films for Visible and Infrared Applications

    Science.gov (United States)

    2010-05-01

    spectra from GaN:Mg thin films with different (a) Mg temperature, (b) Ga temperature and (c) growth temperature. Fig 4.1 Ga flux ( BEP ) measured at...measurements. The measured value is called beam epitaxy pressure ( BEP ), exponentially proportional to the effusion source temperature. A Leybold...On the other hand, Ga flux can be measured as beam - 59 - equivalent pressure ( BEP ) by manipulator ion gauge and is exponentially proportional to

  1. Effect of RF power and gas flow ratio on the growth and morphology of the PECVD SiC thin films for MEMS applications

    Indian Academy of Sciences (India)

    Bhavana Peri; Bikash Borah; Raj Kishora Dash

    2015-08-01

    Low-temperature plasma enhanced chemical vapour deposition (PECVD) deposited silicon carbide (SiC) thin films are promising materials for the development of high-temperature working microelectromechanical system (MEMS) owing to their excellent mechanical properties, non-corrosive nature and ability to withstand high temperature. However, the surface roughness of such thin films is the main obstacle to achieve thicker thin films for MEMS applications as the surface becomes more rougher with the increase in the thickness of PECVD SiC thin films. Therefore, in this present study, thicker SiC thin films were deposited by PECVD process by using CH4 and SiH4 as the precursor gases in the presence of Ar as the carrier gas and two process parameters, i.e., radio frequency (RF) power with mixed frequency condition and flow ratio of silane to methane were varied by keeping the temperature and pressure constant to investigate the influence of these parameters on the growth rate, surface roughness and morphology of SiC thin films. It was observed that both the RF power (with the mixed frequency condition) and flow ratio of SiH4/CH4 can control the growth rate, surface roughness and morphology of the PECVD SiC thin films. Higher the carbon content in the thin films the surface became more smoother, whereas the surface became for rougher by increasing the RF power.

  2. Scanning probe microscopy: instrumentation and applications on thin films and magnetic multilayers.

    Science.gov (United States)

    Karoutsos, Vagelis

    2009-12-01

    In this article we present a review on instrumentation and the modes of operation of a scanning probe microscope. In detail, we review the main techniques of Scanning Probe Microscopy (SPM), which are Scanning Tunneling Microscopy (STM) and Atomic Force Microscopy (AFM), focusing our attention on the latter one. The AFM instrument provides information on the roughness and grain size of thin films. As an example we review recent results on two metallic thin film systems: thin Ag films deposited on glass, and Ni/Pt compositionally modulated multilayers deposited on glass, Si, and polyimide substrates. To show the validity of the grain size measurements, we compare the data with the ones resulting from X-ray diffraction (XRD) measurements. We show that the AFM results are reliable for grain diameters as small as 14 nm, which is approximately comparable to the tip radius. Finally, we deal with Magnetic Force Microscopy (MFM) results on Co/Pt and Co/Au multilayers. We observe perpendicularly magnetized domains. The domain configurations are correlated to the magnetization hysteresis curves.

  3. Metallic substrate materials for thin film oxygen transport membranes for application in a fossil power plant

    Energy Technology Data Exchange (ETDEWEB)

    Xing, Y.; Baumann, S.; Sebold, D.; Meulenberg, W.A.; Stoever, D. [Forschungszentrum Juelich GmbH (DE). Inst. fuer Energieforschung (IEF) - IEF-1 Materials Synthesis and Processing

    2010-07-01

    La{sub 0.58}Sr{sub 0.4}CO{sub 0.2}Fe{sub 0.8}O{sub 3-{delta}} (LSCF58428) and Ba{sub 0.5}Sr{sub 0.5}CO{sub 0.8}Fe{sub 3-{delta}} (BSCF5582) exhibit high oxygen permeability due to their high ionic and electronic conductivity. For this reason they are under discussion for application in oxygen transport membranes (OTMs) in zero-emission power plants using oxyfuel technology. A thin film membrane which can increase the oxygen flux is beneficial and a structural substrate is required. Two types of Ni-base alloys were studied as substrate material candidates with a number of advantages, such as high strength, high temperature stability, easy joining and similar thermal expansion coefficient to the selected perovskite materials. Chemical compositions and thermal expansion coefficients of Ni-base alloys were measured in this study. LSCF58428 and BSCF5582 layers were screen printed on Ni-based alloys and co-fired at high temperature in air. The microstructure and element analysis of samples were characterized by scanning electron microscopy (SEM and EDX). A Ni-base alloy, MCrAlY, with a high Al content was the most suitable substrate material, and showed better chemical compatibility with perovskite materials at high temperature than Hastelloy X, which is a chromia-forming Ni-base alloy. A reaction occurred between Sr in the perovskite and the alumina surface layers on MCr-AlY. However, the reaction zone did not increase in thickness during medium-term annealing at 800 C in air. Hence, it is expected that this reaction will not prevent the application of MCr-AlY as a substrate material. (orig.)

  4. V{sub 2}O{sub 5} thin film deposition for application in organic solar cells

    Energy Technology Data Exchange (ETDEWEB)

    Arbab, Elhadi A.A.; Mola, Genene Tessema [University of KwaZulu-Natal, School of Chemistry and Physics, Pietermaritzburg Campus, Private Bag X01, Scottsville (South Africa)

    2016-04-15

    Vanadium pentoxide V{sub 2}O{sub 5} films were fabricated by way of electrochemical deposition technique for application as hole transport buffer layer in organic solar cell. A thin and uniform V{sub 2}O{sub 5} films were successfully deposited on indium tin oxide-coated glass substrate. The characterization of surface morphology and optical properties of the deposition suggest that the films are suitable for photovoltaic application. Organic solar cell fabricated using V{sub 2}O{sub 5} as hole transport buffer layer showed better devices performance and environmental stability than those devices fabricated with PEDOT:PSS. In an ambient device preparation condition, the power conversion efficiency increases by nearly 80 % compared with PEDOT:PSS-based devices. The devices lifetime using V{sub 2}O{sub 5} buffer layer has improved by a factor of 10 over those devices with PEDOT:PSS. (orig.)

  5. Polyimide Aerogel Thin Films

    Science.gov (United States)

    Meador, Mary Ann; Guo, Haiquan

    2012-01-01

    Polyimide aerogels have been crosslinked through multifunctional amines. This invention builds on "Polyimide Aerogels With Three-Dimensional Cross-Linked Structure," and may be considered as a continuation of that invention, which results in a polyimide aerogel with a flexible, formable form. Gels formed from polyamic acid solutions, end-capped with anhydrides, and cross-linked with the multifunctional amines, are chemically imidized and dried using supercritical CO2 extraction to give aerogels having density around 0.1 to 0.3 g/cubic cm. The aerogels are 80 to 95% porous, and have high surface areas (200 to 600 sq m/g) and low thermal conductivity (as low as 14 mW/m-K at room temperature). Notably, the cross-linked polyimide aerogels have higher modulus than polymer-reinforced silica aerogels of similar density, and can be fabricated as both monoliths and thin films.

  6. Nano-composite thermochromic thin films and their application in energy-efficient glazing

    Energy Technology Data Exchange (ETDEWEB)

    Saeli, Manfredi [Universita degli Studi di Palermo - Dipartimento di Progetto e Costruzione Edilizia (DPCE), Viale delle Scienze, 90128 Palermo (Italy); Piccirillo, Clara; Parkin, Ivan P.; Binions, Russell [University College London - Department of Chemistry - Christopher Ingold Laboratories, 20 Gordon Street, WC1H 0AJ London (United Kingdom); Ridley, Ian [Barlett School of Graduate Studies, University College London, Wates House, 22 Gordon Street, WC1H 0QB London (United Kingdom)

    2010-02-15

    A hybrid atmospheric pressure and aerosol-assisted chemical vapour deposition strategy is presented as a facile route for the production of vanadium dioxide nano-composite thin films. The effect of the inclusion of gold nanoparticles and the use of a surfactant molecule, tetraoctylammonium bromide, is discussed. The films were fully characterised using a wide variety of techniques, including scanning electron microscopy, X-ray diffraction, X-ray photoelectron spectroscopy and UV/vis/NIR spectroscopy. It is shown that micro-structural changes brought about by careful control of film growth conditions, and/or the use of surfactant, lead to an enhancement of thermochromic properties. Gold nanoparticle incorporation leads to a significant change in the colour of the films from a yellow-brown colour to a variety of greens and blues depending on the gold nanoparticle concentration. The films become more reflective in the infra-red with increased gold nanoparticle incorporation. Optical data are used in energy modelling studies to elucidate the film potential as an energy-saving coating in architectural glazing. The energy modelling results suggest that for warmer climates the thermochromic nano-composites investigated here lead to significant energy savings when compared with plain glass and other standard industry products. (author)

  7. Integration of BaxSr1-xTiO3 thin film for DRAM application

    Science.gov (United States)

    Kashihara, Keiichiro; Okudaira, Tomonori; Tsunemine, Yoshikazu; Ohno, Yoshikazu; Itoh, Hiromi; Nishimura, Tadashi; Hirayama, Makoto; Horikawa, Tsuyoshi; Shibano, Teruo; Horie, Kazuo

    1995-09-01

    This paper presents a newly developed process technology to integrate the BaxSr1-xTiO3(BST) thin film prepared by an rf magnetron sputtering. Evaluations of the integrated BST capacitors on a test element group (TEG) structure revealed some of key issues for a successful integration. A two-step sputtering method comprising the first step to form a nucleation layer and the second step to form the main part of the BST film was found to be useful for preventing the dielectric properties of the integrated BST thin film from the degradation. A careful control of the shape of the lower structures such as the edge of the bottom electrode or the poly Si plug of the storage node turned to be indispensable to obtain the reliable capacitor and this recommends the extensive use of the process that can provide a flush surface such as the Chemical Mechanical Polishing (CMP) in the future integration. The interlevel dielectrics over the BST capacitor was shown to seriously affect the leakage characteristics and an undoped SiO2 film was most suitable for the integrity, implying the needs for another planarization technique instead of the glass reflow. Finally, a preliminary evaluation of the reliability and the normal bit function of a 4 Mbits DRAM, made of fully flat BST stacked capacitors, demonstrated the utility of the developed integration technology.

  8. Antireflective downconversion ZnO:Er3+,Yb3+ thin film for Si solar cell applications

    Science.gov (United States)

    Elleuch, R.; Salhi, R.; Deschanvres, J.-L.; Maalej, R.

    2015-02-01

    Hexagonal wurtzite phased ZnO:Er3+/Yb3+ thin films with various Yb concentrations were deposited on Si(111) substrate by Aerosol Assisted Chemical Vapor Deposition process. Post-annealed films at 1000 °C in air atmosphere showed a crystallinity enhancement. Yb3+ (4F7/2 → 4F5/2) 1000 nm emission increased with the increase of Yb3+ concentration emanating from an Er-Yb energy transfer. The reflectance percentage of 12% was achieved in the [250-1000 nm] range, and the refractive index of 1.97 was obtained for 632 nm wavelength. These results suggest that the (3 mol. % Er, 9 mol. % Yb) codoped film is a highly efficient antireflective downconversion layer for enhancing Si solar cell efficiency.

  9. Ferromagnetic MnGaN thin films with perpendicular magnetic anisotropy for spintronics applications

    Science.gov (United States)

    Lee, Hwachol; Sukegawa, Hiroaki; Liu, Jun; Ohkubo, Tadakatsu; Kasai, Shinya; Mitani, Seiji; Hono, Kazuhiro

    2015-07-01

    Perpendicularly magnetized flat thin films of antiperovskite Mn67Ga24N9 were grown on an MgO(001) substrate by reactive sputtering using an argon/1% nitrogen gas mixture and a Mn70Ga30 target. The films showed a saturation magnetization of 80 -100 kA/m, an effective perpendicular magnetic anisotropy (PMA) energy of 0.1-0.2 MJ/m3, and a Curie temperature of 660-740 K. Upon increasing the N composition, the films transformed from ferromagnetic to antiferromagnetic as expected in the stoichiometric Mn3GaN phase. Point contact Andreev reflection spectroscopy revealed that the ferromagnetic MnGaN has a current spin polarization of 57%, which is comparable to D022-MnGa. These findings suggest that MnGaN is a promising PMA layer for future spintronics devices.

  10. Thin film fuel cell electrodes.

    Science.gov (United States)

    Asher, W. J.; Batzold, J. S.

    1972-01-01

    Earlier work shows that fuel cell electrodes prepared by sputtering thin films of platinum on porous vycor substrates avoid diffusion limitations even at high current densities. The presented study shows that the specific activity of sputtered platinum is not unusually high. Performance limitations are found to be controlled by physical processes, even at low loadings. Catalyst activity is strongly influenced by platinum sputtering parameters, which seemingly change the surface area of the catalyst layer. The use of porous nickel as a substrate shows that pore size of the substrate is an important parameter. It is noted that electrode performance increases with increasing loading for catalyst layers up to two microns thick, thus showing the physical properties of the sputtered layer to be different from platinum foil. Electrode performance is also sensitive to changing differential pressure across the electrode. The application of sputtered catalyst layers to fuel cell matrices for the purpose of obtaining thin total cells appears feasible.

  11. Investigations on laser printing of microcapacitors using poly (methyl methacrylate) dielectric thin films for organic electronics applications

    Science.gov (United States)

    Constantinescu, Catalin; Rapp, Ludovic; Delaporte, Philippe; Alloncle, Anne-Patricia

    2016-06-01

    Thin solid pixels made of Ag/PMMA stacks have been fabricated by laser-induced forward transfer (LIFT), to be tested as thin film microcapacitors in organic electronics applications. The square-shaped laser-printed pixels have a lateral size of ∼350 μm, and the thickness of the dielectric film was varied between 100 and 1500 nm. The pixels were deposited on electrode structures made by LIFT printing of silver nanoparticles ink and paste. Optimal printing conditions led to the fabrication of microcapacitors with typical capacitance in the pF range, tuned by changing the properties of the multilayered structure (e.g. pixel size and/or thickness of the dielectric). Their stability was also investigated over time. We discuss on the morphological and electrical properties of such laser-printed structures, with respect to the impact resistance of the polymer and its suitability for the LIFT process.

  12. Glass-modified stress waves for adhesion measurement of ultra thin films for device applications

    Science.gov (United States)

    Gupta, Vijay; Kireev, Vassili; Tian, Jun; Yoshida, Hiroshi; Akahoshi, Haruo

    2003-08-01

    Laser-generated stress wave profiles with rarefaction shocks (almost zero post-peak decay times) have been uncovered in different types of glasses and presented in this communication. The rise time of the pulses was found to increase with their amplitude, with values reaching as high as 50 ns. This is in contrast to measurements in other brittle crystalline solids where pulses with rise times of 1 -2 ns and post-peak decay times of 16 -20 ns were recorded. The formation of rarefaction shock is attributed to the increased compressibility of glasses with increasing pressures. This was demonstrated using a one-dimensional nonlinear elastic wave propagation model in which the wave speed was taken as a function of particle velocity. The technological importance of these pulses in measuring the tensile strength of very thin film interfaces is demonstrated by using a previously developed laser spallation experiment in which a laser-generated compressive stress pulse in the substrate reflects into a tensile wave from the free surface of the film and pries off its interface at a threshold amplitude. Because of the rarefaction shock, glass-modified waves allow generation of substantially higher interfacial tensile stress amplitudes compared with those with finite post-peak decay profiles. Thus, for the first time, tensile strengths of very strong and ultra thin film interfaces can be measured. Results presented here indicate that interfaces of 185-nm-thick films, and with strengths as high as 2.7 GPa, can be measured. Thus, an important advance has been made that should allow material optimization of ultra thin layer systems that may form the basis of future MEMS-based microelectronic, mechanical and clinical devices.

  13. Chemical vapor deposition and characterization of polysilanes polymer based thin films and their applications in compound semiconductors and silicon devices

    Science.gov (United States)

    Oulachgar, El Hassane

    As the semiconductors industry is moving toward nanodevices, there is growing need to develop new materials and thin films deposition processes which could enable strict control of the atomic composition and structure of thin film materials in order to achieve precise control on their electrical and optical properties. The accurate control of thin film characteristics will become increasingly important as the miniaturization of semiconductor devices continue. There is no doubt that chemical synthesis of new materials and their self assembly will play a major role in the design and fabrication of next generation semiconductor devices. The objective of this work is to investigate the chemical vapor deposition (CVD) process of thin film using a polymeric precursor as a source material. This process offers many advantages including low deposition cost, hazard free working environment, and most importantly the ability to customize the polymer source material through polymer synthesis and polymer functionalization. The combination between polymer synthesis and CVD process will enable the design of new generation of complex thin film materials with a wide range of improved chemical, mechanical, electrical and optical properties which cannot be easily achieved through conventional CVD processes based on gases and small molecule precursors. In this thesis we mainly focused on polysilanes polymers and more specifically poly(dimethylsilanes). The interest in these polymers is motivated by their distinctive electronic and photonic properties which are attributed to the delocalization of the sigma-electron along the Si-Si backbone chain. These characteristics make polysilane polymers very promising in a broad range of applications as a dielectric, a semiconductor and a conductor. The polymer-based CVD process could be eventually extended to other polymer source materials such as polygermanes, as well as and a variety of other inorganic and hybrid organic-inorganic polymers

  14. Advanced properties of Al-doped ZnO films with a seed layer approach for industrial thin film photovoltaic application

    Energy Technology Data Exchange (ETDEWEB)

    Dewald, Wilma, E-mail: wilma.dewald@ist.fraunhofer.de [Fraunhofer Institute for Surface Engineering and Thin Films IST, Bienroder Weg 54E, 38108 Braunschweig (Germany); Sittinger, Volker; Szyszka, Bernd [Fraunhofer Institute for Surface Engineering and Thin Films IST, Bienroder Weg 54E, 38108 Braunschweig (Germany); Säuberlich, Frank; Stannowski, Bernd [Sontor GmbH, OT Thalheim, Sonnenallee 7-11, 06766 Bitterfeld-Wolfen (Germany); Köhl, Dominik; Ries, Patrick; Wuttig, Matthias [I. Physikalisches Institut (IA), RWTH Aachen, Sommerfeldstraße 14, 52074 Aachen (Germany)

    2013-05-01

    Currently sputtered Al-doped ZnO films are transferred to industry for the application in thin film silicon solar modules. These films are known to easily form light trapping structures upon etching which are necessary for absorbers with low absorbance such as μc-Si. Up to now the best structures for high efficiency thin film silicon solar cells were obtained by low rate radio frequency (r.f.) sputtering of ceramic targets. However, for industrial application a high rate process is essential. Therefore a seed layer approach was developed to increase the deposition rate while keeping the desired etch morphology and electrical properties. Aluminum doped ZnO films were deposited dynamically by direct current (d.c.) magnetron sputtering from a ceramic ZnO:Al{sub 2}O{sub 3} target (1 wt.%) onto an additional seed layer prepared by r.f. sputtering. ZnO:Al films were investigated with respect to their optical and electrical properties as well as the morphology created after etching for a-Si/μc-Si solar cells. Additionally atomic force microscopy, scanning electron microscopy, X-ray diffraction and Hall measurements were performed, comparing purely r.f. or d.c. sputtered films with d.c. sputtered films on seed layers. With the seed layer approach it was possible to deposit ZnO:Al films with a visual transmittance of 83.5%, resistivity of 295 μΩ cm, electron mobility of 48.9 cm{sup 2}/Vs and electron density of 4.3 · 10{sup 20} cm{sup −3} from a ceramic target at 330 °C. Etch morphologies with 1 μm lateral structure size were achieved. - Highlights: ► Seed layer approach for dynamic sputter deposition of enhanced quality ZnO:Al. ► A thin radio frequency sputtered ZnO:Al layer assists film nucleation on glass. ► Electron mobility was increased up to 49 cm{sup 2}/Vs due to quasi-epitaxial film growth. ► Etch morphology exhibits 1 μm wide craters for light trapping in solar cells. ► The concept was transferred to a seed layer sputtered with direct current.

  15. Sol-gel PZT and Mn-doped PZT thin films for pyroelectric applications

    Energy Technology Data Exchange (ETDEWEB)

    Zhang, Q. [Advanced Materials Group, School of Industrial and Manufactory Science, Cranfield University, Beds (United Kingdom)]. E-mail: q.zhang@cranfield.ac.uk; Whatmore, R.W. [Advanced Materials Group, School of Industrial and Manufactory Science, Cranfield University, Beds (United Kingdom)

    2001-08-07

    Thin films of ferroelectric lead zirconate titanate (PbZr{sub 0.3}Ti{sub 0.7}O{sub 3} PZT30/70) and manganese-doped lead zirconate titanate ((Pb(Zr{sub 0.3}Ti{sub 0.7}){sub 1-x}Mn{sub x})O{sub 3}, where x=0.01, PM01ZT30/70; and x=0.03, PM03ZT30/70) have been prepared using sol-gel processing techniques. These materials can be used as the pyroelectric thin films in uncooled infrared detectors. The thin films were prepared via a sol-gel route based on a hybrid solvent of methanol and ethanol with acetic acid, ethanolamine and ethylene glycol as additives. The final solution is non-moisture sensitive and stable. Films deposited on Pt/Ti/SiO{sub 2}/Si substrates and annealed on a hot plate at 500-530{sup 0}C for a few minutes were seen to fully crystallize into the required perovskite phase and showed excellent ferroelectric behaviour, demonstrated by reproducible hysteresis loops (P{sub r}=33-37 {mu}C cm{sup -2}, Ec(+)=70-100 kV cm{sup -1}, Ec(-)=-170 to -140 kV cm{sup -1}). The pyroelectric coefficient (p) was measured using the Byer-Roundy method. At 20 deg. C, p was 2.11x10{sup -4} C m{sup -2} K{sup -1} for PZT30/70, 3.00x10{sup -4} C m{sup -2} K{sup -1} for PM01ZT30/70 and 2.40x10{sup -4} C m{sup -2} K{sup -1} for PM03ZT30/70 thin films. The detectivity figure-of-merit (F{sub D}) was 1.07x10{sup -5} Pa{sup -0.5} for PZT30/70, 3.07x10{sup -5} Pa{sup -0.5} for PM01ZT30/70 and 1.07x10{sup -5} Pa{sup -0.5} for PM03ZT30/70. These figures compare well with values reported previously. (author)

  16. Application of optical 3D measurement on thin film buckling to estimate interfacial toughness

    Science.gov (United States)

    Jia, H. K.; Wang, S. B.; Li, L. A.; Wang, Z. Y.; Goudeau, P.

    2014-03-01

    The shape-from-focus (SFF) method has been widely studied as a passive depth recovery and 3D reconstruction method for digital images. An important step in SFF is the calculation of the focus level for different points in an image by using a focus measure. In this work, an image entropy-based focus measure is introduced into the SFF method to measure the 3D buckling morphology of an aluminum film on a polymethylmethacrylate (PMMA) substrate at a micro scale. Spontaneous film wrinkles and telephone-cord wrinkles are investigated after the deposition of a 300 nm thick aluminum film onto the PMMA substrate. Spontaneous buckling is driven by the highly compressive stress generated in the Al film during the deposition process. The interfacial toughness between metal films and substrates is an important parameter for the reliability of the film/substrate system. The height profiles of different sections across the telephone-cord wrinkle can be considered a straight-sided model with uniform width and height or a pinned circular model that has a delamination region characterized by a sequence of connected sectors. Furthermore, the telephone-cord geometry of the thin film can be used to calculate interfacial toughness. The instability of the finite element model is introduced to fit the buckling morphology obtained by SFF. The interfacial toughness is determined to be 0.203 J/m2 at a 70.4° phase angle from the straight-sided model and 0.105 J/m2 at 76.9° from the pinned circular model.

  17. Nano-vanadium oxide thin films in mixed phase for microbolometer applications

    Energy Technology Data Exchange (ETDEWEB)

    Subrahmanyam, A; Bharat Kumar Reddy, Y [Department of Physics, Indian Institute of Technology Madras, Chennai 600036 (India); Nagendra, C L [LEOS, ISRO, Peenya Industrial Estate, Bangalore 560060 (India)], E-mail: manu@iitm.ac.in

    2008-10-07

    Among the several phases of vanadium oxide, mixed phases of VO{sub 2} and V{sub 2}O{sub 5} are preferred for uncooled micro-bolometers with low noise. The aim of this investigation is to achieve mixed phase VO{sub 2} and V{sub 2}O{sub 5} thin films with nanometre grain sizes and high temperature coefficient of resistance (TCR). Since the phase depends upon the oxygen reactivity, these vanadium oxide thin films are prepared by reactive electron beam evaporation at different oxygen flow rates and substrate temperatures. The mixed phases have been evaluated through x-ray diffraction and x-ray photo emission studies. The temperature dependence of resistance has shown that the films grown at 473 K with 2.8 x 10{sup -5} mbar chamber pressure of oxygen (VO{sub 2} : V{sub 2}O{sub 5} ratio of 36 : 64) have the highest TCR of -3.2 K{sup -1} with a reasonable low resistance (120 {omega}/square)

  18. Dispersion model for optical thin films applicable in wide spectral range

    Science.gov (United States)

    Franta, Daniel; Nečas, David; Ohlídal, Ivan; Giglia, Angelo

    2015-09-01

    In the optics industry thin film systems are used to construct various interference devices such as antireflective coatings, high-reflectance mirrors, beam splitters and filters. The optical characterization of complex optical systems can not be performed by measurements only in the short spectral range in which the interference devices will be employed because the measured data do not contain sufficient information about all relevant parameters of these systems. The characterization of film materials requires the extension of the spectral range of the measurements to the IR region containing phonon absorption and to the UV region containing the electronic excitations. However, this leads to necessity of a dispersion model suitable for the description of the dielectric response in the wide spectral range. Such model must respect the physical conditions following from theory of dispersion, particularly Kramers-Kronig relations and integrability imposed by sum rules. This work presents the construction of a universal dispersion model composed from individual contributions representing both electronic and phonon excitations. The efficiency of presented model is given by the fact that all the contributions are described by analytical expressions. It is shown that the model is suitable for precise modeling of spectral dependencies of optical constants of a broad class of materials used in the optical industry for thin film systems such as MgF2, SiO2, Al2O3, HfO2, Ta2O5 and TiO2 in the spectral range from far IR to vacuum UV.

  19. Use of the shape memory polymer polystyrene in the creation of thin film stretchable sensors for wearable applications

    Science.gov (United States)

    Van Volkinburg, Kyle R.; Nguyen, Thao; Pegan, Jonathan D.; Khine, Michelle; Washington, Gregory N.

    2016-04-01

    The shape memory polymer polystyrene (PS) has been used to create complex hierarchical wrinkling in the fabrication of stretchable thin film bimetallic sensors ideal for wearable based gesture monitoring applications. The film has been bonded to the elastomer polydimethylsiloxane (PDMS) and operates as a strain gauge under the general notion of geometric piezoresistivity. The film was subject to tensile, cyclic, and step loading conditions in order to characterize its dynamic behavior. To measure the joint angle of the metacarpophalangeal (MCP) joint on the right index finger, the sensor was adhered to a fitted golf glove above said joint and a motion study was conducted. At maximum joint angle the sensor experienced roughly 23.5% strain. From the study it was found that two simple curves, one while the finger was in flexion and the other while the finger was in extension, were able to predict the joint angle from measured voltage with an average error of 2.99 degrees.

  20. Crystalline thin films: The electrochemical atomic layer deposition (ECALD) view

    CSIR Research Space (South Africa)

    Modibedi, M

    2011-09-01

    Full Text Available Electrochemical atomic layer deposition technique is selected as one of the methods to prepare thin films for various applications, including electrocatalytic materials and compound....

  1. Solution-based Syntheses of Iron Pyrite Thin Films for Photovoltaic and Protein Foot-printing Applications

    Science.gov (United States)

    El Makkaoui, Mohammed

    Iron pyrite (cubic FeS2) is a non-toxic, earth abundant semiconductor possessing a set of excellent optical/electronic properties for serving as an absorber layer in PV devices. Additionally, pyrite is a very efficient hydroxyl radical generator via Fenton chemistry and has shown promise in oxidative protein and DNA foot-printing application. The main focus of this thesis is on fabricating phase and elementally pure iron pyrite thin films using a solution-based approach that employs hydrazine as a solvent. A precursor ink is formed at room temperature by mixing elemental iron and sulfur in anhydrous hydrazine and then deposited on Mo-coated glass substrates, via spin coating, to yield amorphous iron sulfide films that are then annealed in H2S (340°C) and sulfur gas (≤ 500 °C) to form uniform, polycrystalline and phase pure pyrite films with densely packed grains. This approach is likely to yield the most elementally pure pyrite thin films made to date, through a very simple and scalable process. The ink has shown to be very sensitive to environmental conditions and has a very short shelf life (˜1 day). Additionally, the film microstructure is greatly influenced by the S:Fe concentration ratio that when tuned to 3:1, yielded uniform, robust and optically flat iron sulfide thin films with an optimal thickness (˜320 nm) for PV application. The results however were not reproducible, mainly due to failure in applying multiple layers without compromising film morphology. Thinner (films, on the other hand, are reproducibly produced, but are too thin to be employed in PV devices. Direct annealing in sulfur gas at 475°C for 4 hours, bypassing the > 12 hour H2S annealing step, yielded phase pure pyrite films, with good morphology, at lower processing time and annealing temperatures (polymer laminates for protein foot-printing application in collaboration with the Brenowitz lab at the Albert Einstein College of Medicine and the Khine lab at the University of California

  2. Thin copper oxide films prepared by ion beam sputtering with subsequent thermal oxidation: Application in chemiresistors

    Science.gov (United States)

    Horak, P.; Bejsovec, V.; Vacik, J.; Lavrentiev, V.; Vrnata, M.; Kormunda, M.; Danis, S.

    2016-12-01

    Copper oxide films were prepared by thermal oxidation of thin Cu films deposited on substrates by ion beam sputtering. The subsequent oxidation was achieved in the temperature range of 200 °C-600 °C with time of treatment from 1 to 7 h (with a 1-h step) in a furnace open to air. At temperatures 250 °C-600 °C, the dominant phase formed was CuO, while at 200 °C mainly the Cu2O phase was identified. However, the oxidation at 200 °C led to a more complicated composition - in the depth Cu2O phase was observed, though in the near-surface layer the CuO dominant phase was found with a significant presence of Cu(OH)2. A limited amount of Cu2O was also found in samples annealed at 600 °C. The sheet resistance RS of the as-deposited Cu sample was 2.22 Ω/□, after gradual annealing RS was measured in the range 2.64 MΩ/□-2.45 GΩ/□. The highest RS values were obtained after annealing at 300 °C and 350 °C, respectively. Oxygen depth distribution was studied using the 16O(α,α) nuclear reaction with the resonance at energy 3032 keV. It was confirmed that the higher oxidation degree of copper is located in the near-surface region. Preliminary tests of the copper oxide films as an active layer of a chemiresistor were also performed. Hydrogen and methanol vapours, with a concentration of 1000 ppm, were detected by the sensor at an operating temperature of 300 °C and 350 °C, respectively. The response of the sensors, pointed at the p-type conductivity, was improved by the addition of thin Pd or Au catalytic films to the oxidic film surface. Pd-covered films showed an increased response to hydrogen at 300 °C, while Au-covered films were more sensitive to methanol vapours at 350 °C.

  3. Waveguide evanescent field fluorescence microscopy: Thin film fluorescence intensities and its application in cell biology

    Science.gov (United States)

    Hassanzadeh, Abdollah; Nitsche, Michael; Mittler, Silvia; Armstrong, Souzan; Dixon, Jeff; Langbein, Uwe

    2008-06-01

    We demonstrate an inexpensive alternative to total internal reflection fluorescence microscopy. A method for imaging ultrathin films and living cells located on waveguides—illuminated with their evanescent fields—is introduced. An extensive analysis of ion-exchanged waveguides focusing on their application as microscopy substrates for studying interfacial phenomena is presented. Experimental results are in excellent agreement with the simulations. As an application osteoblasts (bone matrix forming cells) and ultrathin Langmuir-Blodgett films were imaged. The fluorescence intensity has been used to determine the cell attachment.

  4. Photopatternable nano-composite (SU-8/ZnO) thin films for piezo-electric applications

    Science.gov (United States)

    Kandpal, Manoj; Sharan, Chandrashekhar; Poddar, Pankaj; Prashanthi, K.; Apte, Prakash R.; Ramgopal Rao, V.

    2012-09-01

    Photo-curable nanocomposite material was formulated by embedding ZnO nanoparticles into a SU-8 matrix and studied for its piezoelectric properties for low cost fabrication of self-powered nanodevices. The piezoelectric coefficient of ZnO nanoparticles was observed to be ranging between 15 and 23 pm/V, which is the highest reported. These experimental studies support the recent theoretical predictions where the piezoelectric coefficients in ZnO nanoparticles were found to be higher compared to the thin films because of the surface relaxation induced volume reductions in the nanometer scale. The photo-curable property of these polymer composite films is exploited to demonstrate fabrication of a micro-cantilever test structure.

  5. High-energy ion treatments of amorphous As40Se60 thin films for optical applications

    OpenAIRE

    Rashmi Chauhan; Arvind Tripathi; Krishna Kant Srivastava

    2014-01-01

    The treatment of 100 MeV Ag swift-heavy ion (SHI) irradiation with five different fluences (3×1010, 1×1011, 3×1011, 1×1012, and 3×1012 ions/cm2) was used to design optical and structural properties of amorphous (a-) As40Se60 chalcogenide thin films. Swanepoel method was applied on transmission measurements to determine the changes in optical bandgap, Tauc parameter and linear optical parameters, i.e., linear optical absorption, extinction coefficient and linear refractive index. Dispersion of...

  6. High-energy ion treatments of amorphous As40Se60 thin films for optical applications

    OpenAIRE

    Chauhan, Rashmi; Tripathi, Arvind; Srivastava, Krishna Kant

    2014-01-01

    The treatment of 100 MeV Ag swift-heavy ion (SHI) irradiation with five different fluences (3×1010, 1×1011, 3×1011, 1×1012, and 3×1012 ions/cm2) was used to design optical and structural properties of amorphous (a-) As40Se60 chalcogenide thin films. Swanepoel method was applied on transmission measurements to determine the changes in optical bandgap, Tauc parameter and linear optical parameters, i.e., linear optical absorption, extinction coefficient and linear refractive index. Dispersion of...

  7. Development of high damage threshold multilayer thin film beam combiner for laser application

    Science.gov (United States)

    Nand, Mangla; Babita, Jena, S.; Tokas, R. B.; Rajput, P.; Mukharjee, C.; Thakur, S.; Jha, S. N.; Sahoo, N. K.

    2016-05-01

    A polarized wavelength multiplexer with high laser induced damage threshold has been developed to combine two laser beam of high peak power in the visible region. The present wavelength multiplexer is a multilayer thin film device deposited by reactive electron beam evaporation. The developed device is capable of combining two p-polarized laser beams of peak power density of 1.7 GW/cm2 at an angle of incidence of 45°. High transmission (T> 90%) in high pass region and high reflection (R> 99%) in stop band region have been achieved.

  8. Synthesis and characterization of azo-containing organometallic thin films for all optical switching applications

    Science.gov (United States)

    Gatri, R.; Fillaut, J.-L.; Mysliwiec, J.; Szukalski, A.; Bartkiewicz, S.; El-Ouazzani, H.; Guezguez, I.; Khammar, F.; Sahraoui, B.

    2012-05-01

    Novel photoresponsive materials based on azo-containing bifunctional ruthenium-acetylides have been synthesized. All optical switching based on the Optical Kerr Effect in the organometallic thin films based on ruthenium(II) acetylides containing an azobenzene moiety as a photochromic unit in the main pi-conjugated system dispersed in a poly(methyl methacrylate) matrix has been observed. The excitation beam was delivered from a picosecond laser at wavelength 532 nm while dynamics of induced sample birefringence was probed by a non-absorbed linearly polarized beam of cw He-Ne laser (632.8 nm). The influence of ruthenium part on dynamics of molecular motions has been shown.

  9. Amorphous thin films for solar cell application. Final technical report, March 15, 1979-February 29, 1980

    Energy Technology Data Exchange (ETDEWEB)

    Jonath, A D; Anderson, W W; Crowley, J L; MacMillan, H F; Junga, F A; Knudsen, J F; Monahan, K M; Thornton, J A

    1980-03-01

    Magnetron sputtering, a deposition method in which magnetic confinement of a plasma encourages high deposition rates at low working gas partial pressures, is under investigation in this program as a candidate production technology for large-scale manufacture of high-efficiency, thin-film amorphous silicon solar photovoltaic cells. The approach uses two dc magnetron geometries: (1) a low-cost planar magnetron (PM) system for exploratory and detailed examination of deposition parameter space; and (2) a cylindrical magnetron (CM) system, scalable to production sizes, for deposition of homogeneous films over large areas. Detailed descriptions of these two systems are included. During this first-year effort, amorphous silicon films and device structures were sputtered in both PM and CM systems under a wide range of deposition conditions (i.e., T/sub s/, P/sub Ar/, P/sub H/sub 2//) using both doped and undoped sputter targets. Measured electrical and optical film properties indicate that control over a wide range of conductivity, photoconductivity, conductivity activation energy, and optical and infrared absorption behavior is achievable. Multiple depositions to fabricate simple MIS device structures and simultaneously to deposit monitor samples of individual constituent layers have been successful. Other program highlights are: (1) deposition rates as great as 1500 A/min were achieved in high-power dc magnetron operation at practical substrate-target spacings; (2) p-type and n-type a-Si:H consistently deposited from p- and n-type targets, respectively; (3) demonstrated correlation of argon and hydrogen partial pressure variations with optical, electronic, and structural properties of magnetron-sputtered a-Si:H films; and (4) initial depositions have achieved properties comparable to those in films made by rf sputtering and glow-discharge methods.

  10. Influence of solution viscosity on hydrothermally grown ZnO thin films for DSSC applications

    Science.gov (United States)

    Marimuthu, T.; Anandhan, N.; Thangamuthu, R.; Surya, S.

    2016-10-01

    Zinc oxide (ZnO) nanowire arrays (NWAs) were grown onto zinc oxide-titanium dioxide (ZnO-TiO2) seeded fluorine doped tin oxide (FTO) conductive substrate by hydrothermal technique. X-ray diffraction (XRD) patterns depict that ZnO thin films are preferentially oriented along the (002) plane with hexagonal wurtzite structure. Viscosity measurements reveal that viscosity of the solutions linearly increases as the concentrations of the polyvinyl alcohol (PVA) increase in the growth solution. Field emission scanning electron microscope (FE-SEM) images show that the NWAs are vertically grown to seeded FTO substrate with hexagonal structure, and the growth of NWAs decreases as the concentration of the PVA increases. Stylus profilometer and atomic force microscopic (AFM) studies predict that the thickness and roughness of the films decrease with increasing the PVA concentrations. The NWAs prepared at 0.1% of PVA exhibits a lower transmittance and higher absorbance than that of the other films. The band gap of the optimized films prepared at 0.0 and 0.1% of PVA is found to be 3.270 and 3.268 eV, respectively. The photo to current conversion efficiency of the DSSC based on photoanodes prepared at 0.0 and 0.1% of PVA exhibits about 0.64 and 0.82%, respectively. Electrochemical impedance spectra reveal that the DSSC based on photoanode prepared at 0.1% of PVA has the highest charge transfer recombination resistance.

  11. Structural, optical and electrical properties of tin oxide thin films for application as a wide band gap semiconductor

    Energy Technology Data Exchange (ETDEWEB)

    Sethi, Riti; Ahmad, Shabir; Aziz, Anver; Siddiqui, Azher Majid, E-mail: amsiddiqui@jmi.ac.in [Department of Physics, Jamia Millia Islamia, New Delhi-110025 (India)

    2015-08-28

    Tin oxide (SnO) thin films were synthesized using thermal evaporation technique. Ultra pure metallic tin was deposited on glass substrates using thermal evaporator under high vacuum. The thickness of the tin deposited films was kept at 100nm. Subsequently, the as-deposited tin films were annealed under oxygen environment for a period of 3hrs to obtain tin oxide films. To analyse the suitability of the synthesized tin oxide films as a wide band gap semiconductor, various properties were studied. Structural parameters were studied using XRD and SEM-EDX. The optical properties were studied using UV-Vis Spectrophotometry and the electrical parameters were calculated using the Hall-setup. XRD and SEM confirmed the formation of SnO phase. Uniform texture of the film can be seen through the SEM images. Presence of traces of unoxidised Sn has also been confirmed through the XRD spectra. The band gap calculated was around 3.6eV and the optical transparency around 50%. The higher value of band gap and lower value of optical transparency can be attributed to the presence of unoxidised Sn. The values of resistivity and mobility as measured by the Hall setup were 78Ωcm and 2.92cm{sup 2}/Vs respectively. The reasonable optical and electrical parameters make SnO a suitable candidate for optoelectronic and electronic device applications.

  12. Property control of expanding thermal plasma deposited textured zinc oxide with focus on thin film solar cell applications

    Energy Technology Data Exchange (ETDEWEB)

    Groenen, R. [Eindhoven University of Technology, Department of Applied Physics, P.O. Box 513, 5600 MB Eindhoven (Netherlands); Loeffler, J. [Utrecht University, Debye Institute, SID-Physics of Devices, P.O. Box 80000, 3508 TA Utrecht (Netherlands); Linden, J.L. [TNO TPD, Division Models and Processes, P.O. Box 595, 5600 AN Eindhoven (Netherlands); Schropp, R.E.I. [Utrecht University, Debye Institute, SID-Physics of Devices, P.O. Box 80000, 3508 TA Utrecht (Netherlands); Sanden, M.C.M. van de [Eindhoven University of Technology, Department of Applied Physics, P.O. Box 513, 5600 MB Eindhoven (Netherlands)]. E-mail: m.c.m.v.d.sanden@tue.nl

    2005-12-01

    Property control of expanding thermal plasma deposited textured zinc oxide is demonstrated considering intrinsic, i.e. bulk, and extrinsic transparent conducting oxide quality relevant for application in thin film amorphous silicon pin solar cells. Particularly the interdependence of electrical conductivity, film composition and film morphology, i.e. structure, feature shape and roughness of the surface, is addressed. Control of film composition is mainly governed by plasma production and gas phase chemistry inherently inducing a significant contribution to film morphology, whereas control of film morphology solely is governed by near-substrate conditions. Especially the ratio of zinc to oxygen and the reactor chamber pressure appear to be determinative in obtaining zinc oxide exhibiting the appropriate intrinsic and extrinsic quality, i.e. a high electrical conductivity, a high transmittance, a textured rough surface morphology and a strong hydrogen plasma resistance. The solar cell performance of appropriate undoped and aluminium doped textured zinc oxide inherently obtained during deposition is comparable with respect to Asahi U-type fluorine-doped tin oxide.

  13. Highly conductive boron doped micro/nanocrystalline silicon thin films deposited by VHF-PECVD for solar cell applications

    Energy Technology Data Exchange (ETDEWEB)

    Juneja, Sucheta; Sudhakar, S., E-mail: sudhakars@nplindia.org; Gope, Jhuma; Lodhi, Kalpana; Sharma, Mansi; Kumar, Sushil

    2015-09-15

    Graphical abstract: AFM images of boron doped micro/nanocrystalline silicon films at different diborane gas flow. - Highlights: • High deposition rate of 10 Å/s was achieved for boron doped silicon films. • Wide range of optical band gap from 1.32 eV to 1.84 eV observed for the deposited films. - Abstract: Boron doped hydrogenated micro/nanocrystalline silicon (μc/nc-Si:H) thin films have been deposited by plasma enhanced chemical vapor deposition technique (PECVD) using silane (SiH{sub 4}) diluted in argon. Diborane (B{sub 2}H{sub 6}) was used as the dopant gas and deposition was carried out at substrate temperature of 200 °C. The diborane flow (F{sub B}) varied in the range 0.00–0.30. Here, we report the effects of B{sub 2}H{sub 6} doping on electronic, optical and structural properties of hydrogenated micro/nanocrystalline silicon films. The structural properties were analyzed by atomic force microscopy (AFM) and X-ray diffraction (XRD). The doped micro/nano crystalline silicon films presented a crystallographic orientation preferentially in the (1 1 1) and (2 2 0) plane. We resolve the deposition parameters that lead to the formation of p-type micro/nanocrystalline silicon thin films with very high value of conductivity and lower optical band gap. Correlations between structural and electrical properties were also studied. Based on temperature dependent conductivity measurements, it has been observed that the room temperature dark conductivity varies in the range 1.45 × 10{sup −4} Ω{sup −1} cm{sup −1} to 2.02 Ω{sup −1} cm{sup −1} for the B-doped films. Meanwhile, the corresponding value of activation energies decreased to 0.06 eV for the B-doped films, which indicates the doped μc/nc-Si films with high conductivity can be achieved and these films prove to be a very good candidate for application in amorphous and micro/nano crystalline silicon solar cells as a p-type window layer.

  14. Selective inorganic thin films

    Energy Technology Data Exchange (ETDEWEB)

    Phillips, M.L.F.; Pohl, P.I.; Brinker, C.J. [Sandia National Labs., Albuquerque, NM (United States)

    1997-04-01

    Separating light gases using membranes is a technology area for which there exists opportunities for significant energy savings. Examples of industrial needs for gas separation include hydrogen recovery, natural gas purification, and dehydration. A membrane capable of separating H{sub 2} from other gases at high temperatures could recover hydrogen from refinery waste streams, and facilitate catalytic dehydrogenation and the water gas shift (CO + H{sub 2}O {yields} H{sub 2} + CO{sub 2}) reaction. Natural gas purification requires separating CH{sub 4} from mixtures with CO{sub 2}, H{sub 2}S, H{sub 2}O, and higher alkanes. A dehydrating membrane would remove water vapor from gas streams in which water is a byproduct or a contaminant, such as refrigeration systems. Molecular sieve films offer the possibility of performing separations involving hydrogen, natural gas constituents, and water vapor at elevated temperatures with very high separation factors. It is in applications such as these that the authors expect inorganic molecular sieve membranes to compete most effectively with current gas separation technologies. Cryogenic separations are very energy intensive. Polymer membranes do not have the thermal stability appropriate for high temperature hydrogen recovery, and tend to swell in the presence of hydrocarbon natural gas constituents. The authors goal is to develop a family of microporous oxide films that offer permeability and selectivity exceeding those of polymer membranes, allowing gas membranes to compete with cryogenic and adsorption technologies for large-scale gas separation applications.

  15. Thin-film solar cell

    NARCIS (Netherlands)

    Metselaar, J.W.; Kuznetsov, V.I.

    1998-01-01

    The invention relates to a thin-film solar cell provided with at least one p-i-n junction comprising at least one p-i junction which is at an angle alpha with that surface of the thin-film solar cell which collects light during operation and at least one i-n junction which is at an angle beta with t

  16. Thin-film solar cell

    NARCIS (Netherlands)

    Metselaar, J.W.; Kuznetsov, V.I.

    1998-01-01

    The invention relates to a thin-film solar cell provided with at least one p-i-n junction comprising at least one p-i junction which is at an angle alpha with that surface of the thin-film solar cell which collects light during operation and at least one i-n junction which is at an angle beta with t

  17. Nanostructured Zn and ZnO nanowire thin films for mechanical and self-cleaning applications

    Science.gov (United States)

    Shaik, Ummar Pasha; Purkayastha, Debarun Dhar; Krishna, M. Ghanashyam; Madhurima, V.

    2015-03-01

    Nanostructured Zn metal films were deposited by thermal evaporation, on borosilicate glass, Quartz, sapphire, lanthanum aluminate and yttria stabilized zirconia substrates. The as-deposited films are nanocrystalline and show a morphology that consists of triangular nanosheets. The films are hydrophobic with contact angles between 102° and 120° with hardness and Young's modulus between 0.15-0.8 GPa and 18-300 GPa, respectively. Thermal annealing of the films at 500 °C results only in partial oxidation of Zn to ZnO, which indicates good oxidation resistance. Annealing also causes transformation of the Zn nanosheets into ZnO nanowires that are polycrystalline in nature. The ZnO nanowires are superhydrophobic with contact angles between 159° and 162°, contact angle hysteresis between 5° and 10° and exhibit a reversible superhydrophobic-hydrophilic transition under UV irradiation. The nanowires are much softer than the as-deposited Zn metal films, with hardness between 0.02 and 0.4 GPa and Young's modulus between 3 and 35 GPa. The current study thus demonstrates a simple process for fabrication of nanostructured Zn metal films followed by a one-step transformation to nanowires with properties that will be very attractive for mechanical and self-cleaning applications.

  18. Electrical and thermal properties of polycrystalline Si thin films with phononic crystal nanopatterning for thermoelectric applications

    Energy Technology Data Exchange (ETDEWEB)

    Nomura, Masahiro, E-mail: nomura@iis.u-tokyo.ac.jp [Institute of Industrial Science, The University of Tokyo, Tokyo 153–8505 (Japan); Institute for Nano Quantum Information Electronics, The University of Tokyo, Tokyo 153–8505 (Japan); Department of Microsystems Engineering (IMTEK), University of Freiburg, Freiburg 79110 (Germany); Kage, Yuta [Institute of Industrial Science, The University of Tokyo, Tokyo 153–8505 (Japan); Müller, David; Moser, Dominik; Paul, Oliver [Department of Microsystems Engineering (IMTEK), University of Freiburg, Freiburg 79110 (Germany)

    2015-06-01

    Electrical and thermal properties of polycrystalline Si thin films with two-dimensional phononic patterning were investigated at room temperature. Electrical and thermal conductivities for the phononic crystal nanostructures with a variety of radii of the circular holes were measured to systematically investigate the impact of the nanopatterning. The concept of phonon-glass and electron-crystal is valid in the investigated electron and phonon transport systems with the neck size of 80 nm. The thermal conductivity is more sensitive than the electrical conductivity to the nanopatterning due to the longer mean free path of the thermal phonons than that of the charge carriers. The values of the figure of merit ZT were 0.065 and 0.035, and the enhancement factors were 2 and 4 for the p-doped and n-doped phononic crystals compared to the unpatterned thin films, respectively, when the characteristic size of the phononic crystal nanostructure is below 100 nm. The greater enhancement factor of ZT for the n-doped sample seems to result from the strong phonon scattering by heavy phosphorus atoms at the grain boundaries.

  19. Study of Optical and Electrical Properties of Organic Thin Films for Photovoltaic Applications

    Directory of Open Access Journals (Sweden)

    Jan Pospisil

    2015-09-01

    Full Text Available The paper deals with the study of optical, electrical and dielectric properties of thin film organic materials suitable for the preparation of optoelectronic devices (e.g. photodiodes, phototransistors, photovoltaic cells. As active layers palladium phthalocyanine (PdPc[t-Bu]4, fullerene (acceptor material, PCBM and their mixture (9:5 mass % were used. Thin films were prepared by two methods: by spin coating (Chemat technology Spin Coater and by material inkjet printing (Dimatix Materials Printer DMP-2800. UV-VIS spectroscopy and ellipsometry were used to study the optical properties. The paper also presents results of electrical and dielectric measurements. We found out that the properties of all structures prepared by spin coating depend on the rotational speed of spin coater, on the mode of solution casting (static, dynamic and in the case of material inkjet printing they are too much influenced by the substrate. Samples prepared on the substrate at 60 °C showed a photovoltaic effect with fill factor about 0.25 and the conversion efficiency about 0.2 %.DOI: http://dx.doi.org/10.5755/j01.ms.21.3.7278

  20. Study of Optical and Electrical Properties of Organic Thin Films for Photovoltaic Applications

    Directory of Open Access Journals (Sweden)

    Jan Pospisil

    2015-09-01

    Full Text Available The paper deals with the study of optical, electrical and dielectric properties of thin film organic materials suitable for the preparation of optoelectronic devices (e.g. photodiodes, phototransistors, photovoltaic cells. As active layers palladium phthalocyanine (PdPc[t-Bu]4, fullerene (acceptor material, PCBM and their mixture (9:5 mass % were used. Thin films were prepared by two methods: by spin coating (Chemat technology Spin Coater and by material inkjet printing (Dimatix Materials Printer DMP-2800. UV-VIS spectroscopy and ellipsometry were used to study the optical properties. The paper also presents results of electrical and dielectric measurements. We found out that the properties of all structures prepared by spin coating depend on the rotational speed of spin coater, on the mode of solution casting (static, dynamic and in the case of material inkjet printing they are too much influenced by the substrate. Samples prepared on the substrate at 60 °C showed a photovoltaic effect with fill factor about 0.25 and the conversion efficiency about 0.2 %.DOI: http://dx.doi.org/10.5755/j01.ms.21.3.7278

  1. Organic/Inorganic Nano-hybrids with High Dielectric Constant for Organic Thin Film Transistor Applications

    Science.gov (United States)

    Yu, Yang-Yen; Jiang, Ai-Hua; Lee, Wen-Ya

    2016-11-01

    The organic material soluble polyimide (PI) and organic-inorganic hybrid PI-barium titanate (BaTiO3) nanoparticle dielectric materials (IBX, where X is the concentration of BaTiO3 nanoparticles in a PI matrix) were successfully synthesized through a sol-gel process. The effects of various BaTiO3 contents on the hybrid film performance and performance optimization were investigated. Furthermore, pentacene-based organic thin film transistors (OTFTs) with PI-BaTiO3/polymethylmethacrylate or cyclic olefin copolymer (COC)-modified gate dielectrics were fabricated and examined. The hybrid materials showed effective dispersion of BaTiO3 nanoparticles in the PI matrix and favorable thermal properties. X-ray diffraction patterns revealed that the BaTiO3 nanoparticles had a perovskite structure. The hybrid films exhibited high formability and planarity. The IBX hybrid dielectric films exhibited tunable insulating properties such as the dielectric constant value and capacitance in ranges of 4.0-8.6 and 9.2-17.5 nF cm-2, respectively. Adding the modified layer caused the decrease of dielectric constant values and capacitances. The modified dielectric layer without cross-linking displayed a hydrophobic surface. The electrical characteristics of the pentacene-based OTFTs were enhanced after the surface modification. The optimal condition for the dielectric layer was 10 wt% hybrid film with the COC-modified layer; moreover, the device exhibited a threshold voltage of 0.12 V, field-effect mobility of 4.32 × 10-1 cm2 V-1 s-1, and on/off current of 8.4 × 107.

  2. Size effects in thin films

    CERN Document Server

    Tellier, CR; Siddall, G

    1982-01-01

    A complete and comprehensive study of transport phenomena in thin continuous metal films, this book reviews work carried out on external-surface and grain-boundary electron scattering and proposes new theoretical equations for transport properties of these films. It presents a complete theoretical view of the field, and considers imperfection and impurity effects.

  3. Thin film corrosion. Final report

    Energy Technology Data Exchange (ETDEWEB)

    Raut, M.K.

    1980-06-01

    Corrosion of chromium/gold (Cr/Au) thin films during photolithography, prebond etching, and cleaning was evaluated. Vapors of chromium etchant, tantalum nitride etchant, and especially gold etchant were found to corrosively attack chromium/gold films. A palladium metal barrier between the gold and chromium layers was found to reduce the corrosion from gold etchant.

  4. Methods of making non-covalently bonded carbon-titania nanocomposite thin films and applications of the same

    Energy Technology Data Exchange (ETDEWEB)

    Liang, Yu Teng; Vijayan, Baiju K.; Gray, Kimberly A.; Hersam, Mark C.

    2016-07-19

    In one aspect, a method of making non-covalently bonded carbon-titania nanocomposite thin films includes: forming a carbon-based ink; forming a titania (TiO.sub.2) solution; blade-coating a mechanical mixture of the carbon-based ink and the titania solution onto a substrate; and annealing the blade-coated substrate at a first temperature for a first period of time to obtain the carbon-based titania nanocomposite thin films. In certain embodiments, the carbon-based titania nanocomposite thin films may include solvent-exfoliated graphene titania (SEG-TiO.sub.2) nanocomposite thin films, or single walled carbon nanotube titania (SWCNT-TiO.sub.2) nanocomposite thin films.

  5. Use of optical spacers to enhance infrared Mueller ellipsometry sensitivity: application to the characterization of organic thin films.

    Science.gov (United States)

    Ndong, Gerald; Lizana, Angel; Garcia-Caurel, Enric; Paret, Valerie; Melizzi, Géraldine; Cattelan, Denis; Pelissier, Bernard; Tortai, Jean-Hervé

    2016-04-20

    Mueller ellipsometry in the mid-infrared (IR) spectral range can be used to obtain information about chemical composition through the vibrational spectra of samples. In the case of very thin films (thin film made of a known material which is between the substrate and the layer of interest. We show that, when the thickness of the two layers fulfills a given condition, the spectral features due to vibrational absorptions are enhanced. We explain the enhancement effect in terms of the Airy formula. The theoretical discussion is illustrated with two examples. We analyzed polystyrene thin films deposited on silicon wafers. Some of the wafers were covered by a thin film of thermal silicon dioxide (SiO2), which was used as a spacer. The results show the suitability of the proposed technique to overcome the lack of sensitivity in ellipsometric measurements when it comes to working with either very thin films or materials with low absorption.

  6. Development of thin-film photo-bioreactor and its application to outdoor culture of microalgae.

    Science.gov (United States)

    Yoo, Jae Jun; Choi, Seung Phill; Kim, Jaoon Y H; Chang, Won Seok; Sim, Sang Jun

    2013-06-01

    Photosynthetic microalgae have received much attention as a microbial source of diverse useful biomaterials through CO(2) fixation and various types of photo-bioreactors have been developed for efficient microalgal cultivation. Herein, we developed a novel thin-film photo-bioreactor, which was made of cast polypropylene film, considering outdoor mass cultivation. To develop optimal design of photo-bioreactor, we tested performance of three shapes of thin-film photo-bioreactors (flat, horizontal and vertical tubular shapes) and various parts in the bioreactor. Collectively, vertical tubular bioreactor with H/D ratio 6:1 and cylindrical stainless steel spargers showed the most outstanding performance. Furthermore, the photo-bioreactor was successfully applied to the cultivation of other microalgae such as Chlamydomonas reinhardtii and Chlorella vulgaris. The scalability of photo-bioreactor was confirmed by gradually increasing culture volume from 4 to 25 L and the biomass productivity of each reactor was quite consistent (0.05-0.07 g/L/day) during the cultivation of H. pluvialis under indoor and outdoor conditions. Especially, we also achieved dry cell weight of 4.64 g/L and astaxanthin yield of 218.16 mg/L through long-term cultivation (100 days) under outdoor condition in 15 L photo-bioreactor using Haematococcus pluvialis, which means that the astaxanthin yield from outdoor cultivation is equal or superior to that obtained from controlled indoor condition. Therefore, these results indicate that we can apply this approach to development of optimal photo-bioreactor for the large-scale culture of microalgae and production of useful biomaterials under outdoor condition.

  7. Impact of low temperature annealing on structural, optical, electrical and morphological properties of ZnO thin films grown by RF sputtering for photovoltaic applications

    Science.gov (United States)

    Purohit, Anuradha; Chander, S.; Sharma, Anshu; Nehra, S. P.; Dhaka, M. S.

    2015-11-01

    This paper presents effect of low temperature annealing on the physical properties of ZnO thin films for photovoltaic applications. The thin films of thickness 50 nm were grown on glass and indium tin oxide (ITO) coated glass substrates employing radio frequency magnetron sputtering technique followed by thermal annealing within low temperature range 150-450 °C. These as-grown and annealed films were subjected to the X-ray diffraction (XRD), UV-Vis spectrophotometer, source meter and scanning electron microscopy (SEM) for structural, optical, electrical and surface morphological analysis respectively. The compositional analysis of the as-grown ZnO film was also carried out using energy dispersive spectroscopy (EDS). The XRD patterns reveal that the films have wurtzite structure of hexagonal phase with preferred orientation (1 0 0) and polycrystalline in nature. The crystallographic and optical parameters are calculated and discussed in detail. The optical band gap was found in the range 3.30-3.52 eV and observed to decrease with annealing temperature except 150 °C. The current-voltage characteristics show that the films exhibit approximately ohmic behavior. The SEM studies show that the films are uniform, homogeneous and free from crystal defects and voids. The experimental results reveal that ZnO thin films may be used as alternative materials for eco-friendly buffer layer to the thin film solar cell applications.

  8. Thin Film Deposition Techniques (PVD)

    Science.gov (United States)

    Steinbeiss, E.

    The most interesting materials for spin electronic devices are thin films of magnetic transition metals and magnetic perovskites, mainly the doped La-manganites [1] as well as several oxides and metals for passivating and contacting the magnetic films. The most suitable methods for the preparation of such films are the physical vapor deposition methods (PVD). Therefore this report will be restricted to these deposition methods.

  9. Epitaxial Ni-Mn-Ga-Co thin films on PMN-PT substrates for multicaloric applications

    Energy Technology Data Exchange (ETDEWEB)

    Schleicher, B., E-mail: b.schleicher@ifw-dresden.de; Niemann, R.; Schultz, L.; Fähler, S. [IFW Dresden, Institute for Metallic Materials, P.O. Box 270116, D-01171 Dresden (Germany); TU Dresden, Institute for Solid State Physics, D-01062 Dresden (Germany); Diestel, A.; Hühne, R. [IFW Dresden, Institute for Metallic Materials, P.O. Box 270116, D-01171 Dresden (Germany)

    2015-08-07

    Multicaloric stacks consisting of a magnetocaloric film on a piezoelectric substrate promise improved caloric properties as the transition temperature can be controlled by both magnetic and electric fields. We present epitaxially grown magnetocaloric Ni-Mn-Ga-Co thin films on ferroelectric Pb(Mg{sub 1/3}Nb{sub 2/3}){sub 0.72}Ti{sub 0.28}O{sub 3} substrates. Structure and microstructure of two samples, being in the austenitic and martensitic state at room temperature, are investigated by X-ray diffraction in two- and four-circle geometry and by atomic force microscopy. In addition, high temperature magnetometry was performed on the latter sample. The combination of these methods allows separating the influence of epitaxial growth and martensitic transformation. A preferential alignment of twin boundaries is observed already in the as-deposited state, which indicates the presence of prestress, without applying an electric field to the substrate. A temperature-magnetic field phase diagram is presented, which demonstrates the inverse magnetocaloric effect of the epitaxial Ni-Mn-Ga-Co film.

  10. Epitaxial Ni-Mn-Ga-Co thin films on PMN-PT substrates for multicaloric applications

    Science.gov (United States)

    Schleicher, B.; Niemann, R.; Diestel, A.; Hühne, R.; Schultz, L.; Fähler, S.

    2015-08-01

    Multicaloric stacks consisting of a magnetocaloric film on a piezoelectric substrate promise improved caloric properties as the transition temperature can be controlled by both magnetic and electric fields. We present epitaxially grown magnetocaloric Ni-Mn-Ga-Co thin films on ferroelectric Pb(Mg1/3Nb2/3)0.72Ti0.28O3 substrates. Structure and microstructure of two samples, being in the austenitic and martensitic state at room temperature, are investigated by X-ray diffraction in two- and four-circle geometry and by atomic force microscopy. In addition, high temperature magnetometry was performed on the latter sample. The combination of these methods allows separating the influence of epitaxial growth and martensitic transformation. A preferential alignment of twin boundaries is observed already in the as-deposited state, which indicates the presence of prestress, without applying an electric field to the substrate. A temperature-magnetic field phase diagram is presented, which demonstrates the inverse magnetocaloric effect of the epitaxial Ni-Mn-Ga-Co film.

  11. Dip coated nanocrystalline CdZnS thin films for solar cell application

    Energy Technology Data Exchange (ETDEWEB)

    Dongre, J. K., E-mail: jk-dongre@yahoo.com; Chaturvedi, Mahim; Patil, Yuvraj; Sharma, Sandhya; Jain, U. K. [Government Autonomous Post Graduate College Chhindwara, 480001 (India)

    2015-07-31

    Nanocrystalline cadmium sulfide (CdS) and zinc cadmium sulfide (ZnCdS) thin films have been grown via simple and low cost dip coating technique. The prepared films are characterized by X-ray diffraction (XRD), atomic force microscopic (AFM) and UV-VIS spectrophotometer techniques to reveal their structural, morphological and optical properties. XRD shows that both samples grown have zinc blende structure. The grain size is calculated as 6.2 and 8 nm using Scherrer’s formula. The band gap value of CdS and CdZnS film is estimated to be 2.58 and 2.69 eV respectively by UV-vis spectroscopy. Photoelectrochemical (PEC) investigations are carried out using cell configuration as n-CdZnS/(1M NaOH + 1M Na2S + 1M S)/C. The photovoltaic output characteristic is used to calculate fill-factor (FF) and solar conversion efficiency (η)

  12. Research on C3N4 Superhard Compound Thin Film and Its Application

    Institute of Scientific and Technical Information of China (English)

    Wu Da-wei; Peng Li-li; Lu Ning; Peng You-gui

    2003-01-01

    By combination of DC reactive magnetron sputtering with multiple arcplating, the alternating C3 N4/TiN compound film is deposited onto HSS. The core level binding energy and the contents of carbon and nitrogen are characterized by X-ray photoelectron spectrum. X-ray diffraction(XRD) shows that compound thin film contains hard crystalline phases of α-C3N4 and β-C3N4. The Knoop microhardness in the load range of 50.5-54.1 GPa is measured. According to acoustic emission scratch test, the critical load values for the coatings on HSS substrates are in the range of 40-80 N. The metal coated with C3N4/TiN compound films has a great improvement in the resistance against corrosion. Many tests show that such a coating has a very high wearability. Compared with the uncoated and TiN coated tools, the C3N4/TiN coated tools have a much longer cutting life.

  13. Ferromagnetic MnGaN thin films with perpendicular magnetic anisotropy for spintronics applications

    Energy Technology Data Exchange (ETDEWEB)

    Lee, Hwachol; Sukegawa, Hiroaki, E-mail: sukegawa.hiroaki@nims.go.jp; Ohkubo, Tadakatsu; Kasai, Shinya [National Institute for Materials Science (NIMS), 1-2-1 Sengen, Tsukuba 305-0047 (Japan); Liu, Jun; Mitani, Seiji; Hono, Kazuhiro [National Institute for Materials Science (NIMS), 1-2-1 Sengen, Tsukuba 305-0047 (Japan); Graduate School of Pure and Applied Sciences, University of Tsukuba, Tsukuba 305-8577 (Japan)

    2015-07-20

    Perpendicularly magnetized flat thin films of antiperovskite Mn{sub 67}Ga{sub 24}N{sub 9} were grown on an MgO(001) substrate by reactive sputtering using an argon/1% nitrogen gas mixture and a Mn{sub 70}Ga{sub 30} target. The films showed a saturation magnetization of 80 –100 kA/m, an effective perpendicular magnetic anisotropy (PMA) energy of 0.1–0.2 MJ/m{sup 3}, and a Curie temperature of 660–740 K. Upon increasing the N composition, the films transformed from ferromagnetic to antiferromagnetic as expected in the stoichiometric Mn{sub 3}GaN phase. Point contact Andreev reflection spectroscopy revealed that the ferromagnetic MnGaN has a current spin polarization of 57%, which is comparable to D0{sub 22}-MnGa. These findings suggest that MnGaN is a promising PMA layer for future spintronics devices.

  14. Thin films of arylenevinylene oligomers prepared by MAPLE for applications in non-linear optics

    Energy Technology Data Exchange (ETDEWEB)

    Stanculescu, A., E-mail: sanca@infim.ro [National Institute of Materials Physics, Optics and Spectroscopy Laboratory, 105 bis Atomistilor Street, P.O. Box MG-7, Bucharest-Magurele 077125 (Romania); Vacareanu, L.; Grigoras, M. [P. Poni' Institute of Macromolecular Chemistry, 41 A Gr. Ghica Voda Alley, 700487 Iasi (Romania); Socol, M. [National Institute of Materials Physics, Optics and Spectroscopy Laboratory, 105 bis Atomistilor Street, P.O. Box MG-7, Bucharest-Magurele 077125 (Romania); Socol, G. [National Institute for Laser, Plasma and Radiation Physics, Str. Atomistilor, Nr. 409, P.O. Box MG-36, Magurele, Bucharest 077125 (Romania); Stanculescu, F. [Faculty of Physics, University of Bucharest, Str. Atomistilor nr.405, P.O. Box MG-11, Bucharest-Magurele 077125 (Romania); Preda, N.; Matei, E. [National Institute of Materials Physics, Optics and Spectroscopy Laboratory, 105 bis Atomistilor Street, P.O. Box MG-7, Bucharest-Magurele 077125 (Romania); Ionita, I. [Faculty of Physics, University of Bucharest, Str. Atomistilor nr.405, P.O. Box MG-11, Bucharest-Magurele 077125 (Romania); Girtan, M. [Laboratoire de Photonique d' Angers, Universite d' Angers, 2, Bd. Lavoisier, 49045 Angers (France); Mihailescu, I.N. [National Institute for Laser, Plasma and Radiation Physics, Str. Atomistilor, Nr. 409, P.O. Box MG-36, Magurele, Bucharest 077125 (Romania)

    2011-04-01

    This paper discusses two arylenevinylene oligomers with optical nonlinear properties. Their trans molecular structure was confirmed by Fourier Transform Infrared Spectroscopy and Nuclear Magnetic Resonance. Second Harmonic Generation and two-photon fluorescence have been observed on Matrix Assisted Pulsed Laser Evaporation-deposited thin films. We have seen two local maxima in UV-Vis spectra and a red shift of the photoluminescence peak for carbazole-based oligomer, which can be correlated with a higher conformational flexibility and with strong polarization interactions in the solid state. Scanning Electron Microscopy and Atomic Force Microscopy images have revealed a grainy morphology of the film deposited on titanium and a higher roughness for carbazole-based oligomer. Second harmonic measurements have shown nearly equal values of the second-order nonlinear optical coefficient for the triphenylamine and carbazole-based oligomers for P{sub laser} < 100 mW. z-Scan and x-scan representations of the carbazole-based oligomer film have shown strong two-photon fluorescence intensity inside the sample confirming a volume process, and a strong second harmonic at the surface of the sample determined by the surface morphology.

  15. Thin film CdTe based neutron detectors with high thermal neutron efficiency and gamma rejection for security applications

    Science.gov (United States)

    Smith, L.; Murphy, J. W.; Kim, J.; Rozhdestvenskyy, S.; Mejia, I.; Park, H.; Allee, D. R.; Quevedo-Lopez, M.; Gnade, B.

    2016-12-01

    Solid-state neutron detectors offer an alternative to 3He based detectors, but suffer from limited neutron efficiencies that make their use in security applications impractical. Solid-state neutron detectors based on single crystal silicon also have relatively high gamma-ray efficiencies that lead to false positives. Thin film polycrystalline CdTe based detectors require less complex processing with significantly lower gamma-ray efficiencies. Advanced geometries can also be implemented to achieve high thermal neutron efficiencies competitive with silicon based technology. This study evaluates these strategies by simulation and experimentation and demonstrates an approach to achieve >10% intrinsic efficiency with <10-6 gamma-ray efficiency.

  16. Effect of Annealing on the Properties of Antimony Telluride Thin Films and Their Applications in CdTe Solar Cells

    OpenAIRE

    Zhouling Wang; Yu Hu; Wei Li; Guanggen Zeng; Lianghuan Feng; Jingquan Zhang; Lili Wu; Jingjing Gao

    2014-01-01

    Antimony telluride alloy thin films were deposited at room temperature by using the vacuum coevaporation method. The films were annealed at different temperatures in N2 ambient, and then the compositional, structural, and electrical properties of antimony telluride thin films were characterized by X-ray fluorescence, X-ray diffraction, differential thermal analysis, and Hall measurements. The results indicate that single phase antimony telluride existed when the annealing temperature was high...

  17. Nanostructured Zn and ZnO nanowire thin films for mechanical and self-cleaning applications

    Energy Technology Data Exchange (ETDEWEB)

    Shaik, Ummar Pasha [Advanced Centre of Research in High Energy Materials, University of Hyderabad, Prof. C R Rao Road, Gachibowli, Hyderabad 500046 (India); Purkayastha, Debarun Dhar, E-mail: ddebarun@yahoo.com [Department of Physics, National Institute of Technology Nagaland, Chumukedima, Dimapur 797103 (India); Krishna, M. Ghanashyam [Advanced Centre of Research in High Energy Materials, University of Hyderabad, Prof. C R Rao Road, Gachibowli, Hyderabad 500046 (India); School of Physics, University of Hyderabad, Prof. C R Rao Road, Gachibowli, Hyderabad 500046 (India); Madhurima, V. [Department of Physics, Central University of Tamil Nadu, Thiruvarur 610004 (India)

    2015-03-01

    Highlights: • Zn metal films were deposited by thermal evaporation, on various substrates. • Upon annealing Zn there is transformation of the Zn nanosheets into ZnO nanowires. • ZnO nanowires are superhydrophobic and exhibit wetting transition on UV exposure. • ZnO will be useful in self-cleaning, mechanical and oxidation resistance surfaces. - Abstract: Nanostructured Zn metal films were deposited by thermal evaporation, on borosilicate glass, Quartz, sapphire, lanthanum aluminate and yttria stabilized zirconia substrates. The as-deposited films are nanocrystalline and show a morphology that consists of triangular nanosheets. The films are hydrophobic with contact angles between 102° and 120° with hardness and Young's modulus between 0.15–0.8 GPa and 18–300 GPa, respectively. Thermal annealing of the films at 500 °C results only in partial oxidation of Zn to ZnO, which indicates good oxidation resistance. Annealing also causes transformation of the Zn nanosheets into ZnO nanowires that are polycrystalline in nature. The ZnO nanowires are superhydrophobic with contact angles between 159° and 162°, contact angle hysteresis between 5° and 10° and exhibit a reversible superhydrophobic–hydrophilic transition under UV irradiation. The nanowires are much softer than the as-deposited Zn metal films, with hardness between 0.02 and 0.4 GPa and Young's modulus between 3 and 35 GPa. The current study thus demonstrates a simple process for fabrication of nanostructured Zn metal films followed by a one-step transformation to nanowires with properties that will be very attractive for mechanical and self-cleaning applications.

  18. Magnetowetting of Ferrofluidic Thin Liquid Films

    Science.gov (United States)

    Tenneti, Srinivas; Subramanian, Sri Ganesh; Chakraborty, Monojit; Soni, Gaurav; Dasgupta, Sunando

    2017-03-01

    An extended meniscus of a ferrofluid solution on a silicon surface is subjected to axisymmetric, non-uniform magnetic field resulting in significant forward movement of the thin liquid film. Image analyzing interferometry is used for accurate measurement of the film thickness profile, which in turn, is used to determine the instantaneous slope and the curvature of the moving film. The recorded video, depicting the motion of the film in the Lagrangian frame of reference, is analyzed frame by frame, eliciting accurate information about the velocity and acceleration of the film at any instant of time. The application of the magnetic field has resulted in unique changes of the film profile in terms of significant non-uniform increase in the local film curvature. This was further analyzed by developing a model, taking into account the effect of changes in the magnetic and shape-dependent interfacial force fields.

  19. Ultrafast nonlinear optical properties of thin-solid DNA film and their application as a saturable absorber in femtosecond mode-locked fiber laser

    Science.gov (United States)

    Khazaeinezhad, Reza; Hosseinzadeh Kassani, Sahar; Paulson, Bjorn; Jeong, Hwanseong; Gwak, Jiyoon; Rotermund, Fabian; Yeom, Dong-Il; Oh, Kyunghwan

    2017-01-01

    A new extraordinary application of deoxyribonucleic acid (DNA) thin-solid-film was experimentally explored in the field of ultrafast nonlinear photonics. Optical transmission was investigated in both linear and nonlinear regimes for two types of DNA thin-solid-films made from DNA in aqueous solution and DNA-cetyltrimethylammonium chloride (CTMA) in an organic solvent. Z-scan measurements revealed a high third-order nonlinearity with n2 exceeding 10-9 at a wavelength of 1570 nm, for a nonlinarity about five orders of magnitude larger than that of silica. We also demonstrated ultrafast saturable absorption (SA) with a modulation depth of 0.43%. DNA thin solid films were successfully deposited on a side-polished optical fiber, providing an efficient evanescent wave interaction. We built an organic-inorganic hybrid all-fiber ring laser using DNA film as an ultrafast SA and using Erbium-doped fiber as an efficient optical gain medium. Stable transform-limited femtosecond soliton pulses were generated with full width half maxima of 417 fs for DNA and 323 fs for DNA-CTMA thin-solid-film SAs. The average output power was 4.20 mW for DNA and 5.46 mW for DNA-CTMA. Detailed conditions for DNA solid film preparation, dispersion control in the laser cavity and subsequent characteristics of soliton pulses are discussed, to confirm unique nonlinear optical applications of DNA thin-solid-film.

  20. Thin film bioreactors in space

    Science.gov (United States)

    Hughes-Fulford, M.; Scheld, H. W.

    1989-01-01

    Studies from the Skylab, SL-3 and D-1 missions have demonstrated that biological organisms grown in microgravity have changes in basic cellular functions such as DNA, mRNA and protein synthesis, cytoskeleton synthesis, glucose utilization, and cellular differentiation. Since microgravity could affect prokaryotic and eukaryotic cells at a subcellular and molecular level, space offers an opportunity to learn more about basic biological systems with one inmportant variable removed. The thin film bioreactor will facilitate the handling of fluids in microgravity, under constant temperature and will allow multiple samples of cells to be grown with variable conditions. Studies on cell cultures grown in microgravity would make it possible to identify and quantify changes in basic biological function in microgravity which are needed to develop new applications of orbital research and future biotechnology.

  1. Thin film bioreactors in space

    Science.gov (United States)

    Hughes-Fulford, M.; Scheld, H. W.

    Studies from the Skylab, SL-3 and D-1 missions have demonstrated that biological organisms grown in microgravity have changes in basic cellular functions such as DNA, mRNA and protein synthesis, cytoskeleton synthesis, glucose utilization and cellular differentiation. Since microgravity could affect prokaryotic and eukaryotic cells at a subcellular and molecular level, space offers us an opportunity to learn more about basic biological systems with one important variable removed. The thin film bioreactor will facilitate the handling of fluids in microgravity, under constant temperature and will allow multiple samples of cells to be grown with variable conditions. Studies on cell cultures grown in microgravity would enable us to identify and quantify changes in basic biological function in microgravity which are needed to develop new applications of orbital research and future biotechnology.

  2. Investigations on laser printing of microcapacitors using poly (methyl methacrylate) dielectric thin films for organic electronics applications

    Energy Technology Data Exchange (ETDEWEB)

    Constantinescu, Catalin, E-mail: constantinescu@lp3.univ-mrs.fr; Rapp, Ludovic, E-mail: rapp@lp3.univ-mrs.fr; Delaporte, Philippe; Alloncle, Anne-Patricia, E-mail: alloncle@lp3.univ-mrs.fr

    2016-06-30

    Graphical abstract: - Highlights: • Laser-induced transfer is used for the printing of multilayered microcapacitors. • The dielectric film is made of PMMA, and the electrodes are made of Ag. • We discuss on the properties of the polymer vs. the LIFT printing. • The structure and electrical properties of the capacitors are emphasized. - Abstract: Thin solid pixels made of Ag/PMMA stacks have been fabricated by laser-induced forward transfer (LIFT), to be tested as thin film microcapacitors in organic electronics applications. The square-shaped laser-printed pixels have a lateral size of ∼350 μm, and the thickness of the dielectric film was varied between 100 and 1500 nm. The pixels were deposited on electrode structures made by LIFT printing of silver nanoparticles ink and paste. Optimal printing conditions led to the fabrication of microcapacitors with typical capacitance in the pF range, tuned by changing the properties of the multilayered structure (e.g. pixel size and/or thickness of the dielectric). Their stability was also investigated over time. We discuss on the morphological and electrical properties of such laser-printed structures, with respect to the impact resistance of the polymer and its suitability for the LIFT process.

  3. Sputtered of ZnO:Al thin Films for Application in Photovoltaic Solar Cells

    Directory of Open Access Journals (Sweden)

    Sona Flickyngerova

    2008-01-01

    Full Text Available High transparent and conductive, aluminium - doped zinc oxide thin films (ZnO:Al, were prepared by radio –frequency (RF diode sputtering from ZnO+2 wt. % Al2O3 target on Eutal glass substrates. Surfaces of the samples weretreated by various technological steps during preparation. The ion bombardment and the substrate temperature modified theirstructure, surface morphology, electrical and optical parameters. In this work we present changes between samples preparedat room temperature (RT and at 200°C, between samples on ion etched substrate and non-modified substrate, and effect ofion etching of the sample surface. We measured transmittance, resistivity and microroughness by AFM on all samples.

  4. Current Approach in Surface Plasmons for Thin Film and Wire Array Solar Cell Applications

    Directory of Open Access Journals (Sweden)

    Keya Zhou

    2015-07-01

    Full Text Available Surface plasmons, which exist along the interface of a metal and a dielectric, have been proposed as an efficient alternative method for light trapping in solar cells during the past ten years. With unique properties such as superior light scattering, optical trapping, guide mode coupling, near field concentration, and hot-electron generation, metallic nanoparticles or nanostructures can be tailored to a certain geometric design to enhance solar cell conversion efficiency and to reduce the material costs. In this article, we review current approaches on different kinds of solar cells, such as crystalline silicon (c-Si and amorphous silicon (a-Si thin film solar cells, organic solar cells, nanowire array solar cells, and single nanowire solar cells.

  5. Dyadic Green’s functions of thin films: Applications within plasmonic solar cells

    DEFF Research Database (Denmark)

    Jung, Jesper; Søndergaard, Thomas; Pedersen, Thomas Garm;

    2011-01-01

    Optimization and design of silicon solar cells by exploiting light scattering frommetal nanoparticles to increase the efficiency is addressed in the small particle limit from a fundamental point of view via the dyadic Green’s function formulation. Based on the dyadic Green’s function (Green....... The theoretical approach is used to analyze realistic configurations for plasmon-assisted silicon solar cells. We show that by embedding metal nanoscatterers in a thin film with a high refractive index (rutile TiO2 with n ≈ 2.5) on top of the silicon, the fraction of scattered light that couples into the solar...... cell can become larger than 96%, and an optical path length enhancement of more than 100 can be achieved....

  6. Handbook of thin film deposition processes and techniques principles, methods, equipment and applications

    CERN Document Server

    Seshan, Krishna

    2002-01-01

    New second edition of the popular book on deposition (first edition by Klaus Schruegraf) for engineers, technicians, and plant personnel in the semiconductor and related industries. This book traces the technology behind the spectacular growth in the silicon semiconductor industry and the continued trend in miniaturization over the last 20 years. This growth has been fueled in large part by improved thin film deposition techniques and the development of highly specialized equipment to enable this deposition. The book includes much cutting-edge material. Entirely new chapters on contamination and contamination control describe the basics and the issues-as feature sizes shrink to sub-micron dimensions, cleanliness and particle elimination has to keep pace. A new chapter on metrology explains the growth of sophisticated, automatic tools capable of measuring thickness and spacing of sub-micron dimensions. The book also covers PVD, laser and e-beam assisted deposition, MBE, and ion beam methods to bring together a...

  7. Interest of Polyelectrolyte Multilayer thin Films in Tissue Engineering:Application to Vascular Allograft

    Institute of Scientific and Technical Information of China (English)

    Halima KERDJOUDJ; Cedric BOURA; Vanessa MOBY; Dominique DUMAS; Luc MARCHAL; Jean-Claude VOEGEL; Jean-Fran(c)ois STOLTZ; Patrick MENU

    2005-01-01

    @@ 1 Introduction Obstructive atherosclerosis vascular disease remains one of the greatest public health threats in the world. Surgical treatment to replace diseased blood vessels is usually done using major human allografts (veins or arteries) or synthetic prosthesis ( PTFE, Dacron). However, these substitutes have not a good pateney, because of the lack of endothelial cells (ECs) layer, which prevents thrombus formation. The challenge of tissue engineering vessels is to build-up blood/substitute interface near native vessels.In order to improve ECs adhesion, it is necessary to precoat the intra-luminal vessel. Recently, a new surface modification technique arose, based on the alternate adsorption of oppositely charged polyelectrolytes. Our objective was to favour the endothelialization of the cryo-preserved allografts, treated with a thin polyelectrolyte multilayered film, made of PSS (poly (sodium-4-styrenesulfonate) ) or PAH (poly (allylamine hydrochloride) ).

  8. Current Approach in Surface Plasmons for Thin Film and Wire Array Solar Cell Applications.

    Science.gov (United States)

    Zhou, Keya; Guo, Zhongyi; Liu, Shutian; Lee, Jung-Ho

    2015-07-22

    Surface plasmons, which exist along the interface of a metal and a dielectric, have been proposed as an efficient alternative method for light trapping in solar cells during the past ten years. With unique properties such as superior light scattering, optical trapping, guide mode coupling, near field concentration, and hot-electron generation, metallic nanoparticles or nanostructures can be tailored to a certain geometric design to enhance solar cell conversion efficiency and to reduce the material costs. In this article, we review current approaches on different kinds of solar cells, such as crystalline silicon (c-Si) and amorphous silicon (a-Si) thin film solar cells, organic solar cells, nanowire array solar cells, and single nanowire solar cells.

  9. Electrical properties and surface morphology of electron beam evaporated p-type silicon thin films on polyethylene terephthalate for solar cells applications

    Energy Technology Data Exchange (ETDEWEB)

    Ang, P. C.; Ibrahim, K.; Pakhuruddin, M. Z. [Nano-Optoelectronics Research and Technology Laboratory, School of Physics, Universiti Sains Malaysia, Minden 11800 Penang (Malaysia)

    2015-04-24

    One way to realize low-cost thin film silicon (Si) solar cells fabrication is by depositing the films with high-deposition rate and manufacturing-compatible electron beam (e-beam) evaporation onto inexpensive foreign substrates such as glass or plastic. Most of the ongoing research is reported on e-beam evaporation of Si films on glass substrates to make polycrystalline solar cells but works combining both e-beam evaporation and plastic substrates are still scarce in the literature. This paper studies electrical properties and surface morphology of 1 µm electron beam evaporated Al-doped p-type silicon thin films on textured polyethylene terephthalate (PET) substrate for application as an absorber layer in solar cells. In this work, Si thin films with different doping concentrations (including an undoped reference) are prepared by e-beam evaporation. Energy dispersion X-ray (EDX) showed that the Si films are uniformly doped by Al dopant atoms. With increased Al/Si ratio, doping concentration increased while both resistivity and carrier mobility of the films showed opposite relationships. Root mean square (RMS) surface roughness increased. Overall, the Al-doped Si film with Al/Si ratio of 2% (doping concentration = 1.57×10{sup 16} atoms/cm{sup 3}) has been found to provide the optimum properties of a p-type absorber layer for fabrication of thin film Si solar cells on PET substrate.

  10. Ultra-Thin Films of Poly(acrylic acid/Silver Nanocomposite Coatings for Antimicrobial Applications

    Directory of Open Access Journals (Sweden)

    Alaa Fahmy

    2016-01-01

    Full Text Available In this work not only colloids of poly(acrylic acid (PAA embedded with silver nanoparticles (Ag-NPs but thin films (10 nm also were deposited using electrospray deposition technique (ESD. A mixture of sodium borohydride (NaBH4 and ascorbic acid (AA were utilized to reduce the silver ions to generate Ag-NPs in the PAA matrix. Moreover, sodium tricitrate was used to stabilize the prepared colloids. The obtained colloids and films were characterized using UV-visible, transmission electron microscopy (TEM. UV-Vis results reveal that an absorption peak at 425 nm was observed in presence of PAA-AgNO3-AA-citrate-NaBH4. This peak is attributed to the well-known surface plasmon resonance of the silver bound in Ag-NPs, while the reduction was rendering and/or inhibiting in absence of the AA and citrate. FTIR spectroscopy was used to study the mechanism of the reaction process of silver nitrate with PAA. TEM images showed the well dispersion of Ag-NPs in the PAA matrix with average particle size of 8 nm. The antimicrobial studies showed that the Ag-NPs embedded in the PAA matrix have proven to have a significant antimicrobial activity against E. coli, B. subtilis, and C. albicans.

  11. Application of surface plasmon polaritons in the laser ablation and characterisation of thin aluminium films

    Science.gov (United States)

    Cairns, G. F.; McNeill, D. A.; Dawson, P.

    1999-06-01

    Surface modification of thin aluminium films is both produced and characterised by exciting surface plasmon polaritons in an attenuated total reflection geometry: silica prism/aluminium/ aluminium oxide system. The modification is performed, under ambient conditions, by exposure to a low fluence (pulse of radiation from an excimer laser at wavelength 248 nm. Pre- and post-ablation characterisation of samples is performed at a centre wavelength of 250 nm by using a xenon lamp and optical filtration. Modelling of the characteristic reflectance-angle curves from areas exposed to the laser shows both an increased oxide thickness and the presence of an optically absorbing cermet layer, a region of mixed metal and oxide, between the aluminium and the aluminium oxide. Analysis of the results suggests that the interfacial aluminium/oxide region supporting the surface mode is ablated by means of a non-thermal, bond-breaking mechanism leading to further surface oxide formation and a progressively less complete oxidation process for a finite distance into the aluminium film. However, the ablation is frustrated in the sense that there is little or no net loss of aluminium from the system.

  12. Nanostructuring of thin Au films deposited on ordered Ti templates for applications in SERS

    Science.gov (United States)

    Grochowska, Katarzyna; Siuzdak, Katarzyna; Macewicz, Łukasz; Skiba, Franciszek; Szkoda, Mariusz; Karczewski, Jakub; Burczyk, Łukasz; Śliwiński, Gerard

    2017-10-01

    In this work the results on thermal nanostructuring of the Au films on Ti templates as well as morphology and optical properties of the obtained structures are reported. The bimetal nanostructures are fabricated in a multi-step process. First, the titania nanotubes are produced on the surface of Ti foil by anodization in an ethylene glycol-water solution containing fluoride ions. This is followed by chemical etching in oxalic acid and results in a highly ordered dimpled surface. Subsequently, thin gold films (5-20 nm) are deposited onto prepared Ti substrates by magnetron sputtering. The as-prepared layers are then dewetted by the UV nanosecond laser pulses or alternatively in the furnace (temperature laser annealing and continuous thermal treatment in furnace can lead to the creation of NPs inside every Ti dimple and result in uniform coating of the whole area of structured templates. The size and localization of NPs obtained via both dewetting processes as well as their shape can be tuned by the annealing time and the laser processing parameters and also by initial thickness of Au layer and presence of the dimples themselves in the substrate. Results confirm that the prepared material can be used as substrate for SERS (Surface Enhanced Raman Spectroscopy).

  13. Optical Constants of Cadmium Telluride Thin Film

    Science.gov (United States)

    Nithyakalyani, P.; Pandiaraman, M.; Pannir, P.; Sanjeeviraja, C.; Soundararajan, N.

    2008-04-01

    Cadmium Telluride (CdTe) is II-VI direct band gap semiconductor compound with potential application in Solar Energy conversion process. CdTe thin film of thickness 220 mn was prepared by thermal evaporation technique at a high vacuum better than 10-5 m.bar on well cleaned glass substrates of dimensions (l cm×3 cm). The transmittance spectrum and the reflectance spectrum of the prepared CdTc thin film was recorded using UV-Vis Spectrophotometer in the wavelength range between 300 nm and 900 nm. These spectral data were analyzed and the optical band and optical constants of CdTe Thin film have been determined by adopting suitable relations. The optical band gap of CdTe thin film is found to be 1.56 eV and this value is also agreeing with the published works of CdTe thin film prepared by various techniques. The absorption coefficient (α) has been higher than 106 cm-1. The Refractive index (n) and the Extinction Coefficient (k) are found to be varying from 3.0 to 4.0 and 0.1 Cm-1 to 0.5 Cm-1 respectively by varying the energy from l.0 eV to 4.0 eV. These results are also compared with the literature.

  14. Polydopamine-modified nanocrystalline diamond thin films as a platform for bio-sensing applications

    Energy Technology Data Exchange (ETDEWEB)

    Pop-Georgievski, Ognen, E-mail: georgievski@imc.cas.cz [Institute of Macromolecular Chemistry, Academy of Sciences of the Czech Republic, Heyrovsky sq. 2, 16206 Prague 6 (Czech Republic); Neykova, Neda, E-mail: neykova@fzu.cz [Institute of Physics, Academy of Sciences of the Czech Republic, Cukrovarnicka 10, 16253 Prague 6 (Czech Republic); Czech Technical University in Prague, Faculty of Nuclear Sciences and Physical Engineering Trojanova 13, 120 00 Prague 2 (Czech Republic); Proks, Vladimir [Institute of Macromolecular Chemistry, Academy of Sciences of the Czech Republic, Heyrovsky sq. 2, 16206 Prague 6 (Czech Republic); Houdkova, Jana; Ukraintsev, Egor; Zemek, Josef; Kromka, Alexander [Institute of Physics, Academy of Sciences of the Czech Republic, Cukrovarnicka 10, 16253 Prague 6 (Czech Republic); Rypaček, František [Institute of Macromolecular Chemistry, Academy of Sciences of the Czech Republic, Heyrovsky sq. 2, 16206 Prague 6 (Czech Republic)

    2013-09-30

    Diamond exhibits good biocompatibility and a large electrochemical potential window, and thus, it is particularly suitable for bio-functionalization and bio-sensing. Modification of the diamond surface can be achieved through mussel-inspired surface chemistry based on polydopamine (PDA) while maintaining the intrinsic properties of the surface. We present a comparative study on the polymerization/deposition of PDA from an aqueous solution of dopamine on hydrogen- (H) and oxygen- (O) terminated nanocrystalline diamond films (NCD). The dopamine polymerization/deposition was performed under mild conditions, which resulted in a confluent PDA layer. A detailed investigation of the growth kinetics of the PDA film on H- and O-terminated NCD substrates was performed using spectroscopic ellipsometry. The chemical composition, the functional group distribution, the surface topography and the wetting properties of the adherent PDA films were evaluated using X-ray photoelectron spectroscopy, atomic force microscopy and water contact angle goniometry, respectively. According to the results, a PDA layer can be used as a platform for future bio-functionalization and/or optical bio-sensing applications. - Highlights: ► Nanocrystalline diamond (NCD) was modified through polydopamine (PDA) chemistry. ► PDA's growth kinetics on H- and O-terminated NCD films were investigated. ► The growth kinetics and composition of PDA were independent of the NCD termination.

  15. The optical characterization of organometallic complex thin films by spectroscopic ellipsometry and photovoltaic diode application

    Energy Technology Data Exchange (ETDEWEB)

    Özaydın, C. [Batman University, Engineering Faculty, Department of Computer Eng., Batman (Turkey); Güllü, Ö., E-mail: omergullu@gmail.com [Batman University, Science and Art Faculty, Department of Physics, Batman (Turkey); Pakma, O. [Batman University, Science and Art Faculty, Department of Physics, Batman (Turkey); Ilhan, S. [Siirt University, Science and Art Faculty, Department of Chemistry, Siirt (Turkey); Akkılıç, K. [Dicle University, Education Faculty, Department of Physics Education, Diyarbakır (Turkey)

    2016-05-15

    Highlights: • Optical properties and thickness of the A novel organometallic complex (OMC) film were investigated by spectroscopic ellipsometry (SE). • Au/OMC/n-Si metal/interlayer/semiconductor (MIS) diode has been fabricated • This paper presents the I–V analysis of Au/OMC/n-Si MIS diode. • Current–voltage and photovoltaic properties of the diode were investigated. - Abstract: In this work, organometallic complex (OMC) films have been deposited onto glass or silicon substrates by spin coating technique and their photovoltaic application potential has been investigated. Optical properties and thickness of the film have been investigated by spectroscopic ellipsometry (SE). Also, transmittance spectrum has been taken by UV/vis spectrophotometer. The optical method has been used to determine the band gap value of the films. Also, Au/OMC/n-Si metal/interlayer/semiconductor (MIS) diode has been fabricated. Current–voltage and photovoltaic properties of the structure were investigated. The ideality factor (n) and barrier height (Φ{sub b}) values of the diode were found to be 2.89 and 0.79 eV, respectively. The device shows photovoltaic behavior with a maximum open-circuit voltage of 396 mV and a short circuit current of 33.8 μA under 300 W light.

  16. Residual stress mapping by micro X-ray diffraction: Application to the study of thin film buckling

    Science.gov (United States)

    Goudeau, P.; Villain, P.; Tamura, N.; Celestre, R. S.; Padmore, H.

    2002-07-01

    Thin films deposited by Physical Vapour Deposition techniques on substrates generally exhibit large residual stresses which may be responsible of spontaneous detachment of the film from its substrate and in the case of compressive stresses, thin film buckling. Although these effects are undesirable for future applications, one may take benefit of it for thin film mechanical properties investigation. Since the 80's, a lot of theoretical works have been done to develop mechanical models with the aim to get a better understanding of driven mechanisms giving rise to this phenomenon and thus to propose solutions to avoid such problems. Nevertheless, only a few experimental works have been done on this subject to support these theoretical results and nothing concerning local stress/strain measurement mainly because of the small dimension of the buckling (few tenth μm). This paper deals with the application of micro beam x-ray diffraction available on synchrotron radiation sources for stress/strain mapping analysis of gold thin film buckling. Les films minces déposés par des techniques de dépôt physique sous vide sur substrats présentent généralement des contraintes résiduelles très élevées qui peuvent être responsables du délaminage spontané du film et dans le cas de contraintes de compression, de l'apparition de cloques. Bien que ces décollements soient indésirables pour les applications technologiques futures, ils peuvent être mis à profit pour analyser les propriétés mécaniques locales dans ces systèmes. Depuis le début des années 80, un grand nombre d'études théoriques ont permis de développer des modèles dans le soucis de mieux comprendre ces phénomènes de flambage. Néanmoins, la validation de ces modèles repose sur une confrontation avec des études expérimentales qui demeurent jusqu'à présent très rares. Ainsi, les champs de déformations associés à ces structures de décollements n'ont pas été déterminés du fait

  17. Birefringent non-polarizing thin film design

    Institute of Scientific and Technical Information of China (English)

    QI Hongji; HONG Ruijin; HE Hongbo; SHAO Jianda; FAN Zhengxiu

    2005-01-01

    In this paper, 2×2 characteristic matrices of uniaxially anisotropic thin film for extraordinary and ordinary wave are deduced at oblique incidence. Furthermore, the reflectance and transmittance of thin films are calculated separately for two polarizations, which provide a new concept for designing non-polarizing thin films at oblique incidence. Besides, using the multilayer birefringent thin films, non-polarizing designs, such as beam splitter thin film at single wavelength, edge filter and antireflection thin film over visible spectral region are obtained at oblique incidence.

  18. Thin film chemical sensors based on chalcogenide glasses for ''electronic tongue'' application

    Energy Technology Data Exchange (ETDEWEB)

    Mourzina, Yu.; Legin, A.V.; Vlasov, Yu.G. [Sankt-Peterburgskij Univ., St. Petersburg (Russian Federation). Kafedra Khimii; Schoening, M.J. [Forschungszentrum Juelich GmbH (Germany). Abt. Sicherheit und Strahlenschutz]|[Univ. of Applied Sciences Aachen, Juelich (Germany); Schubert, J.; Zander, W.; Lueth, H. [Forschungszentrum Juelich GmbH (Germany). Abt. Sicherheit und Strahlenschutz

    2001-07-01

    A novel thin film preparation method, a pulsed laser deposition (PLD) technique, has been used in the present investigation to realise thin film chalcogenide layers for chemical sensor membranes. This technique is compatible with silicon technology and was aimed at fabrication of primary devices for analytical microsystems for the needs of fast analysis and in-situ measurements. The combination of the new type of the potentiometric thin film sensor array based on chalcogenide glass materials and artificial neural network for the experimental data processing is also presented. (orig.)

  19. Micromotors using magnetostrictive thin films

    Science.gov (United States)

    Claeyssen, Frank; Le Letty, Ronan; Barillot, Francois; Betz, Jochen; MacKay, Ken; Givord, Dominique; Bouchilloux, Philippe

    1998-07-01

    This study deals with a micromotor based on the use of magnetostrictive thin films. This motor belongs to the category of the Standing Wave Ultrasonic Motors. The active part of the motor is the rotor, which is a 100 micrometers thick ring vibrating in a flexural mode. Teeth (300 micrometers high) are placed on special positions of the rotor and produce an oblique motion which can induce the relative motion of any object in contact with them. The magnetic excitation field is radial and uses the transverse coupling of the 4 micrometers thick magnetostrictive film. The film, deposited by sputtering on the ring, consists of layers of different rare-earth/iron alloys and was developed during a European Brite-Euram project. The finite element technique was used in order to design a prototype of the motor and to optimize the active rotor and the energizer coil. The prototype we built delivered a speed of 30 turns per minute with a torque of 2 (mu) N.m (without prestress applied on the rotor). Our experimental results show that the performance of this motor could easily be increased by a factor of 5. The main advantage of this motor is the fact that it is remotely powered and controlled. The excitation coil, which provides both power and control, can be placed away from the active rotor. Moreover, the rotor is completely wireless and is not connected to its support or to any other part. It is interesting to note that it would not be possible to build this type of motor using piezoelectric technology. Medical applications of magnetostrictive micromotors could be found for internal microdistributors of medication (the coil staying outside the body). Other applications include remote control micropositioning, micropositioning of optical components, and for the actuation of systems such as valves, electrical switches, and relays.

  20. Amorphous silicon for thin-film transistors

    NARCIS (Netherlands)

    Schropp, Rudolf Emmanuel Isidore

    1987-01-01

    Hydrogenated amorphous silicon (a-Si:H) has considerable potential as a semiconducting material for large-area photoelectric and photovoltaic applications. Moreover, a-Si:H thin-film transistors (TFT’s) are very well suited as switching devices in addressable liquid crystal display panels and addres

  1. Domains in Ferroic Crystals and Thin Films

    CERN Document Server

    Tagantsev, Alexander K; Fousek, Jan

    2010-01-01

    Domains in Ferroic Crystals and Thin Films presents experimental findings and theoretical understanding of ferroic (non-magnetic) domains developed during the past 60 years. It addresses the situation by looking specifically at bulk crystals and thin films, with a particular focus on recently-developed microelectronic applications and methods for observation of domains with techniques such as scanning force microscopy, polarized light microscopy, scanning optical microscopy, electron microscopy, and surface decorating techniques. Domains in Ferroic Crystals and Thin Films covers a large area of material properties and effects connected with static and dynamic properties of domains, which are extremely relevant to materials referred to as ferroics. In most solid state physics books, one large group of ferroics is customarily covered: those in which magnetic properties play a dominant role. Numerous books are specifically devoted to magnetic ferroics and cover a wide spectrum of magnetic domain phenomena. In co...

  2. Recrystallization method to selenization of thin-film Cu(In,Ga)Se.sub.2 for semiconductor device applications

    Science.gov (United States)

    Albin, David S.; Carapella, Jeffrey J.; Tuttle, John R.; Contreras, Miguel A.; Gabor, Andrew M.; Noufi, Rommel; Tennant, Andrew L.

    1995-07-25

    A process for fabricating slightly Cu-poor thin-films of Cu(In,Ga)Se.sub.2 on a substrate for semiconductor device applications includes the steps of forming initially a slightly Cu-rich, phase separated, mixture of Cu(In,Ga)Se.sub.2 :Cu.sub.x Se on the substrate in solid form followed by exposure of the Cu(In,Ga)Se.sub.2 :Cu.sub.x Se solid mixture to an overpressure of Se vapor and (In,Ga) vapor for deposition on the Cu(In,Ga)Se.sub.2 :Cu.sub.x Se solid mixture while simultaneously increasing the temperature of the solid mixture toward a recrystallization temperature (about 550.degree. C.) at which Cu(In,Ga)Se.sub.2 is solid and Cu.sub.x Se is liquid. The (In,Ga) flux is terminated while the Se overpressure flux and the recrystallization temperature are maintained to recrystallize the Cu.sub.x Se with the (In, Ga) that was deposited during the temperature transition and with the Se vapor to form the thin-film of slightly Cu-poor Cu.sub.x (In,Ga).sub.y Se.sub.z. The initial Cu-rich, phase separated large grain mixture of Cu(In,Ga)Se.sub.2 :Cu.sub.x Se can be made by sequentially depositing or co-depositing the metal precursors, Cu and (In, Ga), on the substrate at room temperature, ramping up the thin-film temperature in the presence of Se overpressure to a moderate anneal temperature (about 450.degree. C.) and holding that temperature and the Se overpressure for an annealing period. A nonselenizing, low temperature anneal at about 100.degree. C. can also be used to homogenize the precursors on the substrates before the selenizing, moderate temperature anneal.

  3. C ion-implanted TiO2 thin film for photocatalytic applications

    Science.gov (United States)

    Impellizzeri, G.; Scuderi, V.; Romano, L.; Napolitani, E.; Sanz, R.; Carles, R.; Privitera, V.

    2015-03-01

    Third-generation TiO2 photocatalysts were prepared by implantation of C+ ions into 110 nm thick TiO2 films. An accurate structural investigation was performed by Rutherford backscattering spectrometry, secondary ion mass spectrometry, X-ray diffraction, Raman-luminescence spectroscopy, and UV/VIS optical characterization. The C doping locally modified the TiO2 pure films, lowering the band-gap energy from 3.3 eV to a value of 1.8 eV, making the material sensitive to visible light. The synthesized materials are photocatalytically active in the degradation of organic compounds in water under both UV and visible light irradiation, without the help of any additional thermal treatment. These results increase the understanding of the C-doped titanium dioxide, helpful for future environmental applications.

  4. Characterization of optical thin films for applications at 10.6 μm

    Science.gov (United States)

    Kaspar, Martin; Pfefferkorn, R.; Ramm, Juergen

    1990-08-01

    Electron beam evaporation and ion assisted deposition have been used to prepare BaF2, LaF3 and HoF3 single layers. These fluorides were chosen as low index materials for laser applications at 10.6 Lm. The films were characterized by Rutherford backscattering (RBS), x-ray diffraction, scanning electron microscopy (SEM), stress measurement, laser calorimetry, and spectrophotometry. The influence of substrate temperature, deposition rate, ion energy, and ion to molecule arrival ratio on film growth was analysed and related to the optical properties. Although each material reacts differently to the deposition parameters, ion assisted deposition leads to an increase of the absorption loss at the laser wavelength for all three materials.

  5. Characterization of W-Ti-O thin films for application in photovoltaics

    Science.gov (United States)

    Christmas, Amanda P.

    Photovoltaic (PV) devices consist of the conversion of light energy into electricity. Nearly all PV technologies employ transparent conducting oxides (TCO) as an integral part of the de-vice structure so that the light can reach the semiconductor. The predominant transparent conducting oxide (TCO) that is currently being used in industry is indium tin oxide (ITO). However, Indium (In) is high in cost and becoming scarce in the world. This work is focused towards Titanium doped Tungsten oxide (WO3) for TCO application. The ultimate goal is making novel, cheaper, and efficient TCOs based on W-Ti-O films. Titanium will enhance the conductivity of the film. In addition, Ti is more abundant than In thus leading to low-cost TCO. Ti-doped WO3 (W-Ti-O) films were grown by co-sputter deposition onto silicon, Si (100), and optical grade quartz wafers. Co-sputtering of Ti and W metal targets was per-formed in a wide growth temperature range (room temperature (RT)-500 °C). The Ti sputter-ing power varied from 50 watts-100 watts in order to gain an understanding of the Ti effect. The structure and optical properties were characterized by the X-ray diffraction (XRD), scan-ning electron microscopy (SEM) and the spectrophotometry measurements. The films are op-tically transparent and a correlation between the growth conditions and optical properties is derived. The XRD results show W-Ti-O films grown at RT are amorphous and the films crys-tallize at 200°C. A decrease in the peak intensity implies that the crystallinity decreases with an increase in titanium (Ti) along with a phase change at higher substrate growth tempera-tures. The optical results show the transparency of the films is well above 80%. The energy band gap decreases from 4.0 eV to 3.9 eV with an increase in substrate temperature and in-creases from 3.85 eV to 3.95 eV with an increase of Ti. These results meet the criteria of two essential TCO parameters.

  6. Thin films under chemical stress

    Energy Technology Data Exchange (ETDEWEB)

    1991-01-01

    The goal of work on this project has been develop a set of experimental tools to allow investigators interested in transport, binding, and segregation phenomena in composite thin film structures to study these phenomena in situ. Work to-date has focuses on combining novel spatially-directed optical excitation phenomena, e.g. waveguide eigenmodes in thin dielectric slabs, surface plasmon excitations at metal-dielectric interfaces, with standard spectroscopies to understand dynamic processes in thin films and at interfaces. There have been two main scientific thrusts in the work and an additional technical project. In one thrust we have sought to develop experimental tools which will allow us to understand the chemical and physical changes which take place when thin polymer films are placed under chemical stress. In principle this stress may occur because the film is being swelled by a penetrant entrained in solvent, because interfacial reactions are occurring at one or more boundaries within the film structure, or because some component of the film is responding to an external stimulus (e.g. pH, temperature, electric field, or radiation). However all work to-date has focused on obtaining a clearer understanding penetrant transport phenomena. The other thrust has addressed the kinetics of adsorption of model n-alkanoic acids from organic solvents. Both of these thrusts are important within the context of our long-term goal of understanding the behavior of composite structures, composed of thin organic polymer films interspersed with Langmuir-Blodgett (LB) and self-assembled monolayers. In addition there has been a good deal of work to develop the local technical capability to fabricate grating couplers for optical waveguide excitation. This work, which is subsidiary to the main scientific goals of the project, has been successfully completed and will be detailed as well. 41 refs., 10 figs.

  7. Thin Film Electrodes for Rare Event Detectors

    Science.gov (United States)

    Odgers, Kelly; Brown, Ethan; Lewis, Kim; Giordano, Mike; Freedberg, Jennifer

    2017-01-01

    In detectors for rare physics processes, such as neutrinoless double beta decay and dark matter, high sensitivity requires careful reduction of backgrounds due to radioimpurities in detector components. Ultra pure cylindrical resistors are being created through thin film depositions onto high purity substrates, such as quartz glass or sapphire. By using ultra clean materials and depositing very small quantities in the films, low radioactivity electrodes are produced. A new characterization process for cylindrical film resistors has been developed through analytic construction of an analogue to the Van Der Pauw technique commonly used for determining sheet resistance on a planar sample. This technique has been used to characterize high purity cylindrical resistors ranging from several ohms to several tera-ohms for applications in rare event detectors. The technique and results of cylindrical thin film resistor characterization will be presented.

  8. Inorganic and Organic Solution-Processed Thin Film Devices

    Institute of Scientific and Technical Information of China (English)

    Morteza Eslamian

    2017-01-01

    Thin films and thin film devices have a ubiquitous presence in numerous conventional and emerging tech-nologies. This is because of the recent advances in nanotechnology, the development of functional and smart materials, conducting polymers, molecular semiconductors, carbon nanotubes, and graphene, and the employment of unique prop-erties of thin films and ultrathin films, such as high surface area, controlled nanostructure for effective charge transfer, and special physical and chemical properties, to develop new thin film devices. This paper is therefore intended to provide a concise critical review and research directions on most thin film devices, including thin film transistors, data storage memory, solar cells, organic light-emitting diodes, thermoelectric devices, smart materials, sensors, and actuators. The thin film devices may consist of organic, inorganic, and composite thin layers, and share similar functionality, properties, and fabrication routes. Therefore, due to the multidisciplinary nature of thin film devices, knowledge and advances already made in one area may be applicable to other similar areas. Owing to the importance of developing low-cost, scalable, and vacuum-free fabrication routes, this paper focuses on thin film devices that may be processed and deposited from solution.

  9. Thin-film solar cell

    OpenAIRE

    Metselaar, J.W.; Kuznetsov, V. I.

    1998-01-01

    The invention relates to a thin-film solar cell provided with at least one p-i-n junction comprising at least one p-i junction which is at an angle alpha with that surface of the thin-film solar cell which collects light during operation and at least one i-n junction which is at an angle beta with the light-collecting surface. In this context, the relationships 45 < alpha < 135 degrees and 45 < beta < 135 degrees apply. The invention also relates to a panel provided with a plurality of such t...

  10. Thin-film solar cell

    OpenAIRE

    Metselaar, J.W.; V. I. Kuznetsov

    1998-01-01

    The invention relates to a thin-film solar cell provided with at least one p-i-n junction comprising at least one p-i junction which is at an angle alpha with that surface of the thin-film solar cell which collects light during operation and at least one i-n junction which is at an angle beta with the light-collecting surface. In this context, the relationships 45 < alpha < 135 degrees and 45 < beta < 135 degrees apply. The invention also relates to a panel provided with a plurality of such t...

  11. Poly(ester sulphonic acid) coated mercury thin film electrodes: characterization and application in batch injection analysis stripping voltammetry of heavy metal ions.

    Science.gov (United States)

    Brett, C M; Fungaro, D A

    2000-01-10

    Mercury-thin film electrodes coated with a thin film of poly(ester sulphonic acid) (PESA) have been investigated for application in the analysis of trace heavy metals by square wave anodic stripping voltammetry using the batch injection analysis (BIA) technique. Different polymer dispersion concentrations in water/acetone mixed solvent are investigated and are characterised by electrochemical impedance measurements on glassy carbon and on mercury film electrodes. The influence of electrolyte anion, acetate or nitrate, on polymer film properties is demonstrated, acetate buffer being shown to be preferable for stripping voltammetry applications. Although stripping currents are between 30 and 70% less at the coated than at bare mercury thin film electrodes, the influence of model surfactants on stripping response is shown to be very small. The effect of the composition of the modifier film dispersion on calibration plots is shown; however, detection limits of around 5 nM are found for all modified electrodes tested. This coated electrode is an alternative to Nafion-coated mercury thin film electrodes for the analysis of trace metals in complex matrices, particularly useful when there is a high concentration of non-ionic detergents.

  12. Ultrahigh-Performance Cu2ZnSnS4 Thin Film and Its Application in Microscale Thin-Film Lithium-Ion Battery: Comparison with SnO2.

    Science.gov (United States)

    Lin, Jie; Guo, Jianlai; Liu, Chang; Guo, Hang

    2016-12-21

    To develop a high-performance anode for thin-film lithium-ion batteries (TFBs, with a total thickness on the scale of micrometers), a Cu2ZnSnS4 (CZTS) thin film is fabricated by magnetron sputtering and exhibits an ultrahigh performance of 950 mAh g(-1) even after 500 cycles, which is the highest among the reported CZTS for lithium storage so far. The characterization and electrochemical tests reveal that the thin-film structure and additional reactions both contribute to the excellent properties. Furthermore, the microscale TFBs with effective footprints of 0.52 mm(2) utilizing the CZTS thin film as anode are manufactured by microfabrication techniques, showing superior capability than the analogous TFBs with the SnO2 thin film as anode. This work demonstrates the advantages of exploiting thin-film electrodes and novel materials into micropower sources by electronic manufacture methods.

  13. Low-Temperature Growth of Indium Oxide Thin Film by Plasma-Enhanced Atomic Layer Deposition Using Liquid Dimethyl(N-ethoxy-2,2-dimethylpropanamido)indium for High-Mobility Thin Film Transistor Application.

    Science.gov (United States)

    Kim, Hyo Yeon; Jung, Eun Ae; Mun, Geumbi; Agbenyeke, Raphael E; Park, Bo Keun; Park, Jin-Seong; Son, Seung Uk; Jeon, Dong Ju; Park, Sang-Hee Ko; Chung, Taek-Mo; Han, Jeong Hwan

    2016-10-12

    Low-temperature growth of In2O3 films was demonstrated at 70-250 °C by plasma-enhanced atomic layer deposition (PEALD) using a newly synthesized liquid indium precursor, dimethyl(N-ethoxy-2,2-dimethylcarboxylicpropanamide)indium (Me2In(EDPA)), and O2 plasma for application to high-mobility thin film transistors. Self-limiting In2O3 PEALD growth was observed with a saturated growth rate of approximately 0.053 nm/cycle in an ALD temperature window of 90-180 °C. As-deposited In2O3 films showed negligible residual impurity, film densities as high as 6.64-7.16 g/cm(3), smooth surface morphology with a root-mean-square (RMS) roughness of approximately 0.2 nm, and semiconducting level carrier concentrations of 10(17)-10(18) cm(-3). Ultrathin In2O3 channel-based thin film transistors (TFTs) were fabricated in a coplanar bottom gate structure, and their electrical performances were evaluated. Because of the excellent quality of In2O3 films, superior electronic switching performances were achieved with high field effect mobilities of 28-30 and 16-19 cm(2)/V·s in the linear and saturation regimes, respectively. Furthermore, the fabricated TFTs showed excellent gate control characteristics in terms of subthreshold swing, hysteresis, and on/off current ratio. The low-temperature PEALD process for high-quality In2O3 films using the developed novel In precursor can be widely used in a variety of applications such as microelectronics, displays, energy devices, and sensors, especially at temperatures compatible with organic substrates.

  14. LiCoO2 and SnO2 Thin Film Electrodes for Lithium-Ion Battery Applications

    Science.gov (United States)

    Maranchi, Jeffrey P.; Hepp, Aloysius F.; Kumta, Prashant N.

    2004-01-01

    There is an increasing need for small dimension, ultra-lightweight, portable power supplies due to the miniaturization of consumer electronic devices. Rechargeable thin film lithium-ion batteries have the potential to fulfill the growing demands for micro-energy storage devices. However, rechargeable battery technology and fabrication processes have not kept paced with the advances made in device technology. Economical fabrication methods lending excellent microstructural and compositional control in the thin film battery electrodes have yet to be fully developed. In this study, spin coating has been used to demonstrate the flexibility of the approach to produce both anode (SnO2) and cathode (LiCoO2) thin films. Results on the microstructure crystal structure and electrochemical properties of the thin film electrodes are described and discussed.

  15. Chemical bath deposited (CBD) CuO thin films on n-silicon substrate for electronic and optical applications: Impact of growth time

    Science.gov (United States)

    Sultana, Jenifar; Paul, Somdatta; Karmakar, Anupam; Yi, Ren; Dalapati, Goutam Kumar; Chattopadhyay, Sanatan

    2017-10-01

    Thin film of p-type cupric oxide (p-CuO) is grown on silicon (n-Si) substrate by using chemical bath deposition (CBD) technique and a precise control of thickness from 60 nm to 178 nm has been achieved. The structural properties and stoichiometric composition of the grown films are observed to depend significantly on the growth time. The chemical composition, optical properties, and structural quality are investigated in detail by employing XRD, ellipsometric measurements and SEM images. Also, the elemental composition and the oxidation states of Cu and O in the grown samples have been studied in detail by XPS measurements. Thin film of 110 nm thicknesses exhibited the best performance in terms of crystal quality, refractive index, dielectric constant, band-gap, and optical properties. The study suggests synthesis route for developing high quality CuO thin film using CBD method for electronic and optical applications.

  16. Impact of thermal annealing on physical properties of vacuum evaporated polycrystalline CdTe thin films for solar cell applications

    Science.gov (United States)

    Chander, Subhash; Dhaka, M. S.

    2016-06-01

    A study on impact of post-deposition thermal annealing on the physical properties of CdTe thin films is undertaken in this paper. The thin films of thickness 500 nm were grown on ITO and glass substrates employing thermal vacuum evaporation followed by post-deposition thermal annealing in air atmosphere within low temperature range 150-350 °C. These films were subjected to the XRD, UV-Vis NIR spectrophotometer, source meter, SEM coupled with EDS and AFM for structural, optical, electrical and surface topographical analysis respectively. The diffraction patterns reveal that the films are having zinc-blende cubic structure with preferred orientation along (111) and polycrystalline in nature. The crystallographic parameters are calculated and discussed in detail. The optical band gap is found in the range 1.48-1.64 eV and observed to decrease with thermal annealing. The current-voltage characteristics show that the CdTe films exhibit linear ohmic behavior. The SEM studies show that the as-grown films are homogeneous, uniform and free from defects. The AFM studies reveal that the surface roughness of films is observed to increase with annealing. The experimental results reveal that the thermal annealing has significant impact on the physical properties of CdTe thin films and may be used as absorber layer to the CdTe/CdS thin films solar cells.

  17. Extraordinary Hall effect in thin magnetic films and its potential for sensors, memories and magnetic logic applications

    Science.gov (United States)

    Moritz, J.; Rodmacq, B.; Auffret, S.; Dieny, B.

    2008-07-01

    We investigate the potential of the extraordinary Hall effect (EHE) in magnetic thin films with out-of-plane anisotropy for sensors, memories or logic applications. The scalability of EHE at decreasing lateral dimension has been first explored. In order for EHE to provide output voltage compatible with CMOS technology, it is shown that the longitudinal resistivity of the magnetic material must be considerably increased at decreasing size while keeping a large Hall angle. Then the EHE properties of various classes of materials with out-of-plane anisotropy ((Co/Pt) multilayers, FePt ordered alloys, rare-earth/transition metal alloys, CoSiOx and CoPtSiOx heterogeneous composites) are measured and compared in order to evaluate their potential for the envisioned applications. It is concluded that while EHE can readily be used for large devices (size > micrometres), no materials are yet available which offer suitable scalability towards the 22 nm microelectronic node.

  18. Synthesis of Acenaphthyl and Phenanthrene Based Fused-Aromatic Thienopyrazine Co-Polymers for Photovoltaic and Thin Film Transistor Applications

    KAUST Repository

    Mondal, Rajib

    2009-08-11

    Dithiophene and fluorene co-polymers containing fused aromatic thieno[3,4-b]pyrazine moieties were synthesized for organic thin film transistor (OTFT) and organic photovoltaic (OPV) applications. Suzuki and Stille polycondensation reactions were used for the polymerization. The band gap (Eg) of the polymers was tuned in the range of 1.15-1.6 eV to match the solar spectrum. Density functional theory calculations were carried out to rationalize the low band gaps. These polymers showed field effect mobility (μ) as high as 0.2 cm2/(V.s) with an on/off ratio as high as 106 in OTFT devices. Interestingly, one polymer in this class also showed ambipolar charge transport. Power conversion efficiency (PCE) up to 1.3% was achieved in bulk heterojunction solar cells, indicating that these materials are promising for OPV applications. © 2009 American Chemical Society.

  19. Physics of thin films advances in research and development

    CERN Document Server

    Hass, Georg; Vossen, John L

    2013-01-01

    Physics of Thin Films: Advances in Research and Development, Volume 12 reviews advances that have been made in research and development concerning the physics of thin films. This volume covers a wide range of preparative approaches, physics phenomena, and applications related to thin films. This book is comprised of four chapters and begins with a discussion on metal coatings and protective layers for front surface mirrors used at various angles of incidence from the ultraviolet to the far infrared. Thin-film materials and deposition conditions suitable for minimizing reflectance changes with

  20. Unipolar resistive switching characteristics and scaling behaviors in La2Mo2O9 thin films for nonvolatile memory applications

    Science.gov (United States)

    Hu, L.; Lin, G. T.; Luo, X.; Wei, R. H.; Zhu, X. B.; Song, W. H.; Dai, J. M.; Sun, Y. P.

    2016-12-01

    La2Mo2O9 (LMO) thin films have been deposited on Pt/Ti/SiO2/Si substrates by pulsed laser deposition and the resistive switching (RS) characteristics of the Au/LMO/Pt devices has been investigated. The Au/LMO/Pt devices show excellent unipolar RS characteristics with high resistance ratio between high resistance state and low resistance state (LRS), good endurance, and retention performances. The results of temperature dependence of resistance and x-ray photoelectron spectroscopy suggest that the observed RS characteristics can be explained by the formation and rupture of conducting filaments composed of oxygen vacancies. Furthermore, the plot of the reset current (IR) as a function of the third harmonic coefficient (B0) caused by Joule heating during the reset process shows scaling behavior with a power law of I R ∝ B0 - δ . The IR and reset power (PR) can also be scaled to the resistance in LRS (R0), i.e., I R ( P R ) ∝ R0 - α ( β ) . The observed scaling behaviors indicate the importance of the Joule heating for the RS characteristics of Au/LMO/Pt devices. These results demonstrate the potential application of LMO thin film in a nonvolatile memory device.

  1. Laser transmission welding of polylactide to aluminium thin films for applications in the food-packaging industry

    Science.gov (United States)

    Pagano, Nunziante; Campana, Giampaolo; Fiorini, Maurizio; Morelli, Raffaele

    2017-06-01

    Laser transmission welding is a suitable technology to join thin films of similar or dissimilar materials without any addition of chemical solvents or adhesives. This process represents a very important opportunity in the case of packaging applications (for example in food and pharmaceutical sectors) where the realisation of strong welds by avoiding the contact between the thermal source and the processed materials and, furthermore, without using any third material that could contaminate the contents, is reliable and relevant. The aim of this paper is to prove the feasibility of the laser transmission welding of polylactide to aluminium thin films by means of laser transmission welding through the use of a low power pulsed wave fibre laser. Laser joint samples were realised, analysed by optical microscopy to reveal possible defects and to evaluate the weld width and tested to measure the mechanical tensile strength. An accurate relationship between the joint quality and both the welding speed and the k-factor, which represents the delivered energy per unit length and affects the bonding mechanism at the interface, was determined. The achieved feasibility area is extremely narrow and possible only for the higher value of the average power. The joint tensile strength was proven to be in a proportional relationship with the effective bonded area and reached satisfactory values.

  2. Magnetically actuated peel test for thin films

    Energy Technology Data Exchange (ETDEWEB)

    Ostrowicki, G.T.; Sitaraman, S.K., E-mail: suresh.sitaraman@me.gatech.edu

    2012-03-30

    Delamination along thin film interfaces is a prevalent failure mechanism in microelectronic, photonic, microelectromechanical systems, and other engineering applications. Current interfacial fracture test techniques specific to thin films are limited by either sophisticated mechanical fixturing, physical contact near the crack tip, or complicated stress fields. Moreover, these techniques are generally not suitable for investigating fatigue crack propagation under cyclical loading. Thus, a fixtureless and noncontact experimental test technique with potential for fatigue loading is proposed and implemented to study interfacial fracture toughness for thin film systems. The proposed test incorporates permanent magnets surface mounted onto micro-fabricated released thin film structures. An applied external magnetic field induces noncontact loading to initiate delamination along the interface between the thin film and underlying substrate. Characterization of the critical peel force and peel angle is accomplished through in situ deflection measurements, from which the fracture toughness can be inferred. The test method was used to obtain interfacial fracture strength of 0.8-1.9 J/m{sup 2} for 1.5-1.7 {mu}m electroplated copper on natively oxidized silicon substrates. - Highlights: Black-Right-Pointing-Pointer Non-contact magnetic actuation test for interfacial fracture characterization. Black-Right-Pointing-Pointer Applied load is determined through voltage applied to the driving electromagnet. Black-Right-Pointing-Pointer Displacement and delamination propagation is measured using an optical profiler. Black-Right-Pointing-Pointer Critical peel force and peel angle is measured for electroplated Cu thin-film on Si. Black-Right-Pointing-Pointer The measured interfacial fracture energy of Cu/Si interface is 0.8-1.9 J/m{sup 2}.

  3. Fabrication of Cu2Zn(Sn,Si)S4 thin films using a two-step method for solar cell applications

    Science.gov (United States)

    Xu, Jiaxiong; Liu, Yaqun; Yang, Yuanzheng

    2016-09-01

    To explore Cu2ZnSnS4-based materials for solar cell applications, for the first time, Cu2Zn(Sn,Si)S4 thin films were fabricated using a two-step method that consists of sputtering and post-sulfurization. The films were characterized and then incorporated into solar cells. X-ray diffraction and Raman spectroscopy revealed the formation of Cu2Zn(Sn,Si)S4 structure with traces of a secondary phase after sulfurization treatments. The degree of sulfurization was enhanced as the temperature was increased. In addition, these techniques revealed that there was no silicon or silicide phase present. The Si/Sn atomic ratio was 0.04-0.10. The thin films exhibited Cu-poor and Zn-rich characteristics and high absorption coefficients. The direct optical band gap of the thin films ranged between 1.42 and 1.52 eV. Heterojunction solar cells (glass/Mo/Cu2Zn(Sn,Si)S4/CdS/i-ZnO/ZnO:Al/Al) were fabricated and exhibited the highest conversion efficiency of 0.427%. This study showed the feasibilities of fabricating Cu2Zn(Sn,Si)S4 thin films by a two-step method and using Cu2Zn(Sn,Si)S4 thin films as an absorber layer within a solar cell.

  4. Tailoring electronic structure of polyazomethines thin films

    Directory of Open Access Journals (Sweden)

    J. Weszka

    2010-09-01

    Full Text Available Purpose: The aim of this work is to show how electronic properties of polyazomethine thin films deposited by chemical vapor deposition method (CVD can be tailored by manipulating technological parameters of pristine films preparation as well as modifying them while the as-prepared films put into iodine atmosphere.Design/methodology/approach: The recent achievements in the field of designing and preparation methods to be used while preparing polymer photovoltaic solar cells or optoelectronic devices.Findings: The method used allow for pure pristine polymer thin films to be prtepared without any unintentional doping taking place during prepoaration methods. This is a method based on polycondensation process, where polymer chain developing is running directly due to chemical reaction between molecules of bifunctional monomers. The method applied to prepare thin films of polyazomethines takes advantage of monomer transporting by mreans of neutral transport agent as pure argon is.Research limitations/implications: The main disadvantage of alternately conjugated polymers seems to be quite low mobility of charge carrier that is expected to be a consequence of their backbone being built up of sp2 hybridized carbon and nitrogen atoms. Varying technological conditions towards increasing reagents mass transport to the substrate is expected to give such polyazomethine thin films organization that phenylene rin stacking can result in special π electron systems rather than linear ones as it is the case.Originality/value: Our results supply with original possibilities which can be useful in ooking for good polymer materials for optoelectronic and photovoltaic applications. These results have been gained on polyazomethine thin films but their being isoelectronic counterpart to widely used poly p-phenylene vinylene may be very convenient to develop high efficiency polymer solar cells

  5. Application of Response Surface Methodology in Development of Sirolimus Liposomes Prepared by Thin Film Hydration Technique

    Directory of Open Access Journals (Sweden)

    Saeed Ghanbarzadeh

    2013-04-01

    Full Text Available Introduction: The present investigation was aimed to optimize the formulating process of sirolimus liposomes by thin film hydration method. Methods: In this study, a 32 factorial design method was used to investigate the influence of two independent variables in the preparation of sirolimus liposomes. The dipalmitoylphosphatidylcholine (DPPC /Cholesterol (Chol and dioleoyl phosphoethanolamine(DOPE /DPPC molar ratios were selected as the independent variables. Particle size (PS and Encapsulation Efficiency (EE % were selected as the dependent variables. To separate the un-encapsulated drug, dialysis method was used. Drug analysis was performed with a validated RP-HPLC method. Results: Using response surface methodology and based on the coefficient values obtained for independent variables in the regression equations, it was clear that the DPPC/Chol molar ratio was the major contributing variable in particle size and EE %. The use of a statistical approach allowed us to see individual and/or interaction effects of influencing parameters in order to obtain liposomes with desired properties and to determine the optimum experimental conditions that lead to the enhancement of characteristics. In the prediction of PS and EE % values, the average percent errors are found to be as 3.59 and 4.09%. This value is sufficiently low to confirm the high predictive power of model. Conclusion: Experimental results show that the observed responses were in close agreement with the predicted values and this demonstrates the reliability of the optimization procedure in prediction of PS and EE % in sirolimus liposomes preparation.

  6. Thin Film Differential Photosensor for Reduction of Temperature Effects in Lab-on-Chip Applications.

    Science.gov (United States)

    de Cesare, Giampiero; Carpentiero, Matteo; Nascetti, Augusto; Caputo, Domenico

    2016-02-20

    This paper presents a thin film structure suitable for low-level radiation measurements in lab-on-chip systems that are subject to thermal treatments of the analyte and/or to large temperature variations. The device is the series connection of two amorphous silicon/amorphous silicon carbide heterojunctions designed to perform differential current measurements. The two diodes experience the same temperature, while only one is exposed to the incident radiation. Under these conditions, temperature and light are the common and differential mode signals, respectively. A proper electrical connection reads the differential current of the two diodes (ideally the photocurrent) as the output signal. The experimental characterization shows the benefits of the differential structure in minimizing the temperature effects with respect to a single diode operation. In particular, when the temperature varies from 23 to 50 °C, the proposed device shows a common mode rejection ratio up to 24 dB and reduces of a factor of three the error in detecting very low-intensity light signals.

  7. Significant Enhancement in the Conductivity of Al-Doped Zinc Oxide thin Films for TCO Application

    Science.gov (United States)

    Mohite, R. M.; Ansari, J. N.; Roy, A. S.; Kothawale, R. R.

    2016-03-01

    Nanostructured Al-doped Zinc oxide (ZnO) thin films were deposited on glass substrate by chemical bath deposition (CBD) using aqueous zinc nitrate solution and subjected for different characterizations. Effect of Al3+ substitution on the properties of ZnO annealed at 400∘C was studied by XRD and UV-Vis for structural studies, SEM and TEM for surface morphology and DC four probe resistivity measurements for electrical properties. Al3+ substitution does not influence the morphology and well-known peaks related to wurtzite structure of ZnO. Electron microscopy (SEM and TEM) confirms rod shaped Al-doped ZnO nanocrystals with average width of 50nm. The optical band gap determined by UV-Visible spectroscopy was found to be in the range 3.37eV to 3.44eV. An EPR spectrum of AZO reveals peak at g=1.96 is due to shallow donors Zn interstitial. The DC electrical resistivity measurements of Al-doped ZnO show a minimum resistivity of 3.77×10-2Ω-cm. Therefore, these samples have potential use in n-type window layer in optoelectronic devices, organic solar cells, photonic crystals, photo-detectors, light emitting diodes (LEDs), gas sensors and chemical sensors.

  8. Anodized Nanoporous Titania Thin Films for Dental Application: Structure’ Effect on Corrosion Behavior

    Directory of Open Access Journals (Sweden)

    A. Boucheham

    2016-06-01

    Full Text Available Nanostructured Titania layers formed on the surface of titanium and titanium alloys by anodic oxidation play an important role in the enhancement of their biocompatibility and osseointegration in the human body. For this purpose, we aimed to study in the current work the structural and electrochemical properties of amorphous and crystallized nanostructured TiO2 thin films elaborated on Ti6Al4V substrate by electrochemical anodization in fluoride ions (F– containing electrolyte at 10 V during 15 min and heat treated in air at 550 °C for 2 h. The morphology, chemical composition and phase composition of synthesized layers were investigated using field emission scanning electron microscopy (FE-SEM and X-ray diffraction (XRD. The corrosion resistance improvement of both as-anodized and annealed titania layers was evaluated in 0.9 wt. % NaCl solution with pH = 6.4 at room temperature by means of open circuit potential (Eoc,potentiodynamic polarization (PDYN and electrochemical impedance spectroscopy (EIS.

  9. Engineered smart substrate with embedded patterned permalloy thin film for radio frequency applications

    Science.gov (United States)

    Peng, Yujia; Rahman, B. M. Farid; Wang, Tengxing; Nowrin, Chamok; Ali, Mohammod; Wang, Guoan

    2015-05-01

    Multifunctional and frequency-agile devices are promising components that satisfy multiple standards of modern wireless communication system. This paper provides a unique method to develop tunable RF components based on engineered smart substrate where the smart substrate contain patterned Permalloy (Py) thin film on high-resistivity silicon. The permeability of Py can be adjusted by changing the DC current, thus allowing tunable RF circuits and components. Single or multi-layer patterns can be developed. To demonstrate tunability of the smart substrate, a frequency reconfigurable patch antenna was fabricated on Liquid Crystal Polymer substrate and bonded to the proposed smart substrate. The patch antenna was tested, which revealed that the center frequency of operation could be tuned from 2.38 GHz to 2.43 GHz by changing the DC current from 0 mA to 500 mA. Similarly, a transmission line based phase shifter was also fabricated on another smart substrate, which showed that the phase shifter could provide continuous 90° phase shift from 2.35 GHz to 2.15 GHz under different DC current bias conditions.

  10. A novel method for computing effective diffusivity: Application to helium implanted α-Fe thin films

    Energy Technology Data Exchange (ETDEWEB)

    Dunn, Aaron [George W. Woodruff School of Mechanical Engineering, Georgia Institute of Technology, UMI 2958 Georgia Tech CNRS, 57070 Metz (France); Agudo-Merida, Laura; Martin-Bragado, Ignacio [IMDEA Materials Institute, C/ Eric Kandel, 2, Tecnogetafe, 28906 Getafe, Madrid (Spain); McPhie, Mathieu; Cherkaoui, Mohammed [George W. Woodruff School of Mechanical Engineering, Georgia Institute of Technology, UMI 2958 Georgia Tech CNRS, 57070 Metz (France); Capolungo, Laurent, E-mail: laurent.capolungo@me.gatech.edu [George W. Woodruff School of Mechanical Engineering, Georgia Institute of Technology, UMI 2958 Georgia Tech CNRS, 57070 Metz (France)

    2014-05-01

    The effective diffusivity of helium in thin iron films is quantified using spatially resolved stochastic cluster dynamics and object kinetic Monte Carlo simulations. The roles of total displacement dose (in DPA), damage rate, helium to DPA ratio, layer thickness, and damage type (cascade damage vs Frenkel pair implantation) on effective He diffusivity are investigated. Helium diffusivity is found to decrease with increasing total damage and decreasing damage rate. Arrhenius plots show strongly increased helium diffusivity at high temperatures, high total implantation, and low implantation rates due to decreased vacancy and vacancy cluster concentrations. At low temperatures, effective diffusivity is weakly dependent on foil thickness while at high temperatures, narrower foils prevent defect accumulation by releasing all defects at the free surfaces. Helium to DPA ratio is not shown to strongly change helium diffusivity in the range of irradiation conditions simulated. Frenkel pair implantation is shown to cause higher effective diffusivity and more complex diffusion mechanisms than cascade implantation. The results of these simulations indicate that the differences in damage rates between implantation experiments and fission or fusion environments may result in differences in the final microstructure.

  11. Fundamentals of photoelectric effects in molecular electronic thin film devices: applications to bacteriorhodopsin-based devices.

    Science.gov (United States)

    Hong, F T

    1995-01-01

    This tutorial lecture focuses on the fundamental mechanistic aspects of light-induced charge movements in pigment-containing membranes. The topic is relevant to molecular electronics because many prototypes optoelectronic devices are configured as pigment-containing thin films. We use reconstituted bacteriorhodopsin membranes as an example to illustrate the underlying principle of measurements and data interpretation. Bacteriorhodopsin, a light-driven proton pump, is the only protein component in the purple membrane of Halobacterium halobium. It resembles the visual pigment rhodopsin chemically but performs the function of photosynthesis. Bacteriorhodopsin thus offers an unprecedented opportunity for us to compare the visual photoreceptor and the photosynthetic apparatus from a mechanistic point of view. Bacteriorhodopsin, well known for its exceptional chemical and mechanical stability, is also a popular advanced biomaterial for molecular device construction. The tutorial approaches the subject from two angles. First, the fundamental photoelectric properties are exploited for device construction. Second, basic design principles for photosensors and photon energy converters can be elucidated via 'reverse engineering'. The concept of molecular intelligence and the principle of biomimetic science are discussed.

  12. Thin Film Differential Photosensor for Reduction of Temperature Effects in Lab-on-Chip Applications

    Science.gov (United States)

    de Cesare, Giampiero; Carpentiero, Matteo; Nascetti, Augusto; Caputo, Domenico

    2016-01-01

    This paper presents a thin film structure suitable for low-level radiation measurements in lab-on-chip systems that are subject to thermal treatments of the analyte and/or to large temperature variations. The device is the series connection of two amorphous silicon/amorphous silicon carbide heterojunctions designed to perform differential current measurements. The two diodes experience the same temperature, while only one is exposed to the incident radiation. Under these conditions, temperature and light are the common and differential mode signals, respectively. A proper electrical connection reads the differential current of the two diodes (ideally the photocurrent) as the output signal. The experimental characterization shows the benefits of the differential structure in minimizing the temperature effects with respect to a single diode operation. In particular, when the temperature varies from 23 to 50 °C, the proposed device shows a common mode rejection ratio up to 24 dB and reduces of a factor of three the error in detecting very low-intensity light signals. PMID:26907292

  13. Applicability of diffusive gradients in thin films for measuring Mn in soils and freshwater sediments.

    Science.gov (United States)

    Mundus, Simon; Tandy, Susan; Cheng, Hao; Lombi, Enzo; Husted, Søren; Holm, Peter E; Zhang, Hao

    2011-12-01

    Manganese (Mn) is an essential plant nutrient, receiving increased attention due to significant deficiency problems in modern crop production. In aquatic sediments, Mn plays an important role in controlling the mobility of other elements due to its high redox sensitivity. Diffusive gradients in thin films (DGT) is recognized as one of the most promising techniques to assess plant availability of nutrients in soils and mobility in sediments. However, the appropriate conditions where DGT can be used to measure Mn in soils and sediments have not been thoroughly investigated. We deployed DGTs in soil, sediment, and solution to investigate the effect of pH and competition from Ca and Fe ions. We found that by using DGT it is possible to accurately measure Mn in soils at pH levels and Ca and Fe concentrations resembling those of normal and fertile agricultural soils. However, in acid soils at pH below 5.5, Mn measurements might be biased due to potential competition effects caused by Ca. Soil deployments showed that changes in soil redox conditions were closely reflected by the DGT based Mn measurements. This might enable a novel approach of using DGT to predict Mn mobility and plant availability in soils. In reducing aquatic sediments, high concentrations of ferrous ions can displace Mn from the resin-gel of the DGT device. We found this to be a significant problem with longer deployment times.

  14. Thin Film Research. Volume 1

    Science.gov (United States)

    1985-05-30

    1928), and later by Coper, Frommer and Zocher (1931), followed. From that time, when thin film technology was in its early stages of evolution, we...personal communication (1983). Cau, Marcel, Comtes Rendues 186, 1293 (1928). Coper, H. K., Frommer , L., and Zocher, H., Ztschr. Elektrochem. 37, 571

  15. Single-crystal-like, c-axis oriented BaTiO3 thin films with high-performance on flexible metal templates for ferroelectric applications

    Science.gov (United States)

    Shin, Junsoo; Goyal, Amit; Jesse, Stephen; Kim, Dae Ho

    2009-06-01

    Epitaxial, c-axis oriented BaTiO3 thin films were deposited using pulsed laser ablation on flexible, polycrystalline Ni alloy tape with biaxially textured oxide buffer multilayers. The high quality of epitaxial BaTiO3 thin films with P4mm group symmetry was confirmed by x-ray diffraction. The microscopic ferroelectric domain structure and the piezoelectric domain switching in these films were confirmed via spatially resolved piezoresponse mapping and local hysteresis loops. Macroscopic measurements demonstrate that the films have well-saturated hysteresis loops with a high remanent polarization of ˜11.5 μC/cm2. Such high-quality, single-crystal-like BaTiO3 films on low-cost, polycrystalline, flexible Ni alloy substrates are attractive for applications in flexible lead-free ferroelectric devices.

  16. Ferroelectric Thin Film Development

    Science.gov (United States)

    2003-12-10

    less. The film temper- ature is monitored by thermocouple sensors. Process gases pass through the chamber during the process. An advantage of RTP is the...semiconductor InSe ,” J. Appl. Phys., vol. 86, pp. 5687–5691, November 1999. 37. R. Mollers and R. Memming Ber. Bunsenges. Phys. Chem., vol. 76, 1972. 38. M

  17. Polycrystalline BiFeO3 thin film synthesized via sol-gel assisted spin coating technique for photosensitive application

    Science.gov (United States)

    Bogle, K. A.; Narwade, R. D.; Phatangare, A. B.; Dahiwale, S. S.; Mahabole, M. P.; Khairnar, R. S.

    2016-05-01

    We are reporting photosensitivity property of BiFeO3 thin film under optical illumination. The thin film used for photosensitivity work was fabricated via sol-gel assisted spin coating technique. I-V measurements on the Cu/BiFeO3/Al structure under dark condition show a good rectifying property and show dramatic blue shit in threshold voltage under optical illumination. The microstructure, morphology and elemental analysis of the films were characterized by using XRD, UV-Vis, FTIR, SEM and EDS.

  18. Synthesis and characterization of porous structured ZnO thin film for dye sensitized solar cell applications

    Energy Technology Data Exchange (ETDEWEB)

    Marimuthu, T.; Anandhan, N., E-mail: anandhan-kn@rediffmail.com; Mummoorthi, M. [School of Physics, Alagappa University, Karaikudi – 630 003 (India); Dharuman, V. [Department of Bioelectronics and Biosensors, Alagappa University, Karaikudi – 630 003 (India)

    2016-05-23

    Zinc oxide (ZnO) and zinc oxide/eosin yellow (ZnO/EY) thin films were potentiostatically deposited onto fluorine doped tin oxide (FTO) glass substrate. Effect of eosin yellow dye on structural, morphological and optical properties was studied. X-ray diffraction patterns, micro Raman spectra and photoluminescence (PL) spectra reveal hexagonal wurtzite structure with less atomic defects in 101 plane orientation of the ZnO/EY film. Scanning electron microscopy (SEM) images show flower for ZnO and porous like structure for ZnO/EY thin film, respectively. DSSC was constructed and evaluated by measuring the current density verses voltage curve.

  19. Epitaxial growth of CdTe oriented thin films, infrared characterization and possible applications to photo-voltaic cells

    OpenAIRE

    Gerbaux, X.; Pianelli, A.; Hadni, A.; Jeanniard, C.; Strimer, P.

    1980-01-01

    The growth of CdTe oriented thin films by the ENSH method - i.e. Epitaxial Nucleation in Sub-microscopic Holes of an intermediate layer closely applied on a bulk single crystal — has been recently described. The CdTe films are generally difficult to detach from the bulk crystal. However free films are needed to study the infrared transmission in the spectral region of high absorption. To get them, the vitreous or amorphous thin intermediate layers are substituted by quite soluble an oriented ...

  20. Synthesis and characterization of porous structured ZnO thin film for dye sensitized solar cell applications

    Science.gov (United States)

    Marimuthu, T.; Anandhan, N.; Mummoorthi, M.; Dharuman, V.

    2016-05-01

    Zinc oxide (ZnO) and zinc oxide/eosin yellow (ZnO/EY) thin films were potentiostatically deposited onto fluorine doped tin oxide (FTO) glass substrate. Effect of eosin yellow dye on structural, morphological and optical properties was studied. X-ray diffraction patterns, micro Raman spectra and photoluminescence (PL) spectra reveal hexagonal wurtzite structure with less atomic defects in 101 plane orientation of the ZnO/EY film. Scanning electron microscopy (SEM) images show flower for ZnO and porous like structure for ZnO/EY thin film, respectively. DSSC was constructed and evaluated by measuring the current density verses voltage curve.

  1. Ternary compound thin film solar cells

    Science.gov (United States)

    Kazmerski, L. L.

    1975-01-01

    A group of ternary compound semiconductor (I-III-VI2) thin films for future applications in photovoltaic devices is proposed. The consideration of these materials (CuInSe2, CuInTe2 and especially CuInS2) for long range device development is emphasized. Much of the activity to date has been concerned with the growth and properties of CuInX2 films. X-ray and electron diffraction analyses, Hall mobility and coefficient, resistivity and carrier concentration variations with substrate and film temperature as well as grain size data have been determined. Both p- and n-type films of CuInS2 and CuInSe2 have been produced. Single and double source deposition techniques have been utilized. Some data have been recorded for annealed films.

  2. Hafnium germanosilicate thin films for gate and capacitor dielectric applications: thermal stability studies

    Science.gov (United States)

    Addepalli, Swarna; Sivasubramani, Prasanna; El-Bouanani, Mohamed; Kim, Moon; Gnade, Bruce; Wallace, Robert

    2003-03-01

    The use of SiO_2-GeO2 mixtures in gate and capacitor dielectric applications is hampered by the inherent thermodynamic instability of germanium oxide. Studies to date have confirmed that germanium oxide is readily converted to elemental germanium [1,2]. In sharp contrast, germanium oxide is known to form stable compounds with transition metal oxides such as hafnium oxide (hafnium germanate, HfGeO_4) [3]. Thus, the incorporation of hafnium in SiO_2-GeO2 may be expected to enhance the thermal stability of germanium oxide via Hf-O-Ge bond formation. In addition, the introduction of a transition metal would simultaneously enhance the capacitance of the dielectric thereby permitting a thicker dielectric which reduces leakage current [4]. In this study, the thermal stability of PVD-grown hafnium germanosilicate (HfGeSiO) films was investigated. XPS, HR-TEM, C-V and I-V results of films after deposition and subsequent annealing treatments will be presented. The results indicate that the presence or formation of elemental germanium drastically affects the stability of the HfGeSiO films. This work is supported by DARPA through SPAWAR Grant No. N66001-00-1-8928, and the Texas Advanced Technology Program. References: [1] W. S. Liu, J .S. Chen, M.-A. Nicolet, V. Arbet-Engels, K. L. Wang, Journal of Applied Physics, 72, 4444 (1992), and, Applied Physics Letters, 62, 3321 (1993) [2] W. S. Liu, M. -A. Nicolet, H. -H. Park, B. -H. Koak, J. -W. Lee, Journal of Applied Physics, 78, 2631 (1995) [3] P. M. Lambert, Inorganic Chemistry, 37, 1352 (1998) [4] G. D. Wilk, R. M. Wallace and J. M. Anthony, Journal of Applied Physics, 89, 5243 (2001)

  3. Structural and magnetic properties of Ni78Fe22 thin films sandwiched between low-softening-point glasses and application in spin devices

    Science.gov (United States)

    Misawa, Takahiro; Mori, Sumito; Komine, Takashi; Fujioka, Masaya; Nishii, Junji; Kaiju, Hideo

    2016-12-01

    We investigate the structural and magnetic properties of Ni78Fe22 thin films sandwiched between low-softening-point (LSP) glasses, which can be used in spin quantum cross (SQC) devices utilizing stray magnetic fields generated from magnetic thin-film edges. We also calculate the stray magnetic field generated between the two edges of Ni78Fe22 thin-film electrodes in SQC devices and discuss the applicability to spin-filter devices. Using the established fabrication technique, we successfully demonstrate the formation of LSP-glass/Ni78Fe22/LSP-glass structures with smooth and clear interfaces. The coercivity of the Ni78Fe22 thin films is enhanced from 0.9 to 103 Oe by increasing the applied pressure from 0 to 1.0 MPa in the thermal pressing process. According to the random anisotropy model, the enhancement of the coercivity is attributed to the increase in the crystal grain size. The stray magnetic field is also uniformly generated from the Ni78Fe22 thin-film edge in the direction perpendicular to the cross section of the LSP-glass/Ni78Fe22/LSP-glass structures. Theoretical calculation reveals that a high stray field of approximately 5 kOe is generated when the distance between two edges of the Ni78Fe22 thin-film electrodes is less than 5 nm and the thickness of Ni78Fe22 is greater than 20 nm. These experimental and calculation results indicate that Ni78Fe22 thin films sandwiched between LSP glasses are useful as electrodes for SQC devices, serving as spin-filter devices.

  4. Efficient application of nano-TiO2 thin films in the photocatalytic removal of Alizarin Yellow from aqueous solutions

    Science.gov (United States)

    Tiwari, Diwakar; Lalhriatpuia, C.; Lalhmunsiama; Lee, Seung-Mok; Kong, Sung-Ho

    2015-10-01

    The aim of this investigation is to obtain thin films of nano-TiO2 on a borosilicate glass substrate using sol-gel template method. The thin film was immobilized with and without polyethylene glycol as filler media and annealed at 500 °C. Further, thin films were characterized by the IR, XRD, XRF and XPS analytical methods. The surface morphology of these films was obtained by the FE-SEM images and the BET specific surface area and pore sizes were obtained. The nano-TiO2 was, perhaps, formed a nanopillar onto the substrate. The thin films were successfully employed in the photocatalytic degradation of Alizarin Yellow (AY), an azo dye, from aqueous solutions using the UV-light irradiation under batch reactor operations. Various physico-chemical parametric studies, viz., effect of pH, Alizarin Yellow concentration and interfering ions were studied to deduce the mechanism involved in photocatalytic degradation of this pollutant. The time dependence degradation of Alizarin Yellow was provided to demonstrate the kinetics of degradation of this pollutant from aqueous solutions. It was observed that the degradation of Alizarin Yellow followed pseudo-first-order rate kinetics. Study was further extended with total organic carbon measurement using TOC analyser to demonstrate an apparent mineralization of Alizarin Yellow from aqueous solutions. The presence of several interfering ions or even rad OH scavengers suppressed the photo-catalytic action of thin films in AY degradation from aqueous solutions.

  5. Effect of Annealing on the Properties of Antimony Telluride Thin Films and Their Applications in CdTe Solar Cells

    Directory of Open Access Journals (Sweden)

    Zhouling Wang

    2014-01-01

    Full Text Available Antimony telluride alloy thin films were deposited at room temperature by using the vacuum coevaporation method. The films were annealed at different temperatures in N2 ambient, and then the compositional, structural, and electrical properties of antimony telluride thin films were characterized by X-ray fluorescence, X-ray diffraction, differential thermal analysis, and Hall measurements. The results indicate that single phase antimony telluride existed when the annealing temperature was higher than 488 K. All thin films exhibited p-type conductivity with high carrier concentrations. Cell performance was greatly improved when the antimony telluride thin films were used as the back contact layer for CdTe thin film solar cells. The dark current voltage and capacitance voltage measurements were performed to investigate the formation of the back contacts for the cells with or without Sb2Te3 buffer layers. CdTe solar cells with the buffer layers can reduce the series resistance and eliminate the reverse junction between CdTe and metal electrodes.

  6. Deposition and characterization of CuInS2 thin films deposited over copper thin films

    Science.gov (United States)

    Thomas, Titu; Kumar, K. Rajeev; Kartha, C. Sudha; Vijayakumar, K. P.

    2015-06-01

    Simple, cost effective and versatile spray pyrolysis method is effectively combined with vacuum evaporation for the deposition of CuIns2 thin films for photovoltaic applications. In the present study In2s3 was spray deposited over vacuum evaporated Cu thin films and Cu was allowed to diffuse in to the In2S3 layer to form CuInS2. To analyse the dependence of precursor volume on the formation of CuInS2 films structural, electrical and morphological analzes are carried out. Successful deposition of CuInS2thin films with good crystallinity and morphology with considerably low resistivity is reported in this paper.

  7. Chemical synthesis of α-La{sub 2}S{sub 3} thin film as an advanced electrode material for supercapacitor application

    Energy Technology Data Exchange (ETDEWEB)

    Patil, S.J.; Kumbhar, V.S.; Patil, B.H.; Bulakhe, R.N.; Lokhande, C.D., E-mail: l_chandrakant@yahoo.com

    2014-10-25

    Highlights: • The simple, chemical method used for synthesis of lanthanum sulphide thin films. • The lanthanum sulphide thin film surface exhibited porous microstructure. • The lanthanum sulphide thin film electrode is used for supercapacitor application. - Abstract: α-La{sub 2}S{sub 3} thin films have been synthesized for the first time by successive ionic layer adsorption and reaction (SILAR) method and used for supercapacitor application. These films are characterized for crystal structure, surface morphology and wettability studies using X-ray diffraction (XRD), Fourier Transform-Raman (FT-Raman) spectroscopy, scanning electron microscopy (SEM) and contact angle measurements. The electrochemical supercapacitive performance of α-La{sub 2}S{sub 3} electrode is evaluated by cyclic voltammetry (CV), galvanostatic charge discharge (GCD) and electrochemical impedance spectroscopy (EIS) techniques. From the electrochemical study, it is seen that α-La{sub 2}S{sub 3} electrode delivers high specific capacitance of 256 F g{sup −1} at scan rate of 5 mV s{sup −1} with cycling stability of 85% over 1000 cycles. Such La{sub 2}S{sub 3} electrode has great application in supercapacitor device for energy storage.

  8. Synthesis of nanostructured CuInS{sub 2} thin films and their application in dye-sensitized solar cells

    Energy Technology Data Exchange (ETDEWEB)

    Zhao, Yu; Zhuang, Mixue; Liu, Zhen; Wei, Aixiang [Guangdong University of Technology, Guangdong Provincial Key Laboratory of Functional Soft Condensed Matter, School of Material and Energy, Guangzhou (China); Luo, Fazhi [Guangdong University of Technology, Guangdong Provincial Key Laboratory of Functional Soft Condensed Matter, School of Material and Energy, Guangzhou (China); The Fifth Electronics Research Institute of Ministry of Industry and Information Technology, Guangzhou (China); Liu, Jun [Guangdong University of Technology, Guangdong Provincial Key Laboratory of Functional Soft Condensed Matter, School of Material and Energy, Guangzhou (China); Zhejiang University, State Key Lab of Silicon Materials, Hangzhou (China)

    2016-03-15

    CuInS{sub 2} (CIS) nanostructure thin films were successfully synthesized on FTO conductive glass substrates by solvothermal method. It is found that the surface morphology and microstructure of CIS thin films can be tailored by simply adjusting the concentration of oxalic acid. CIS nanostructure films with texture of ''nanosheet array'' and ''flower-like microsphere'' were obtained and used as Pt-free counter electrode for dye-sensitized solar cells (DSSCs). The nanosheet array CIS was found to have a better electrocatalytic activity than the flower-like microsphere one. DSSCs based on nanosheet array CIS thin film counter electrode show conversion efficiency of 3.33 %, which is comparable to the Pt-catalyzed DSSCs. The easy synthesis, low cost, morphology tunable and excellent electrocatalytic property may make the CuInS{sub 2} nanostructure competitive as counter electrode in DSSCs. (orig.)

  9. Structural and Optical Properties of Sputtered Cadmium Telluride Thin Films Deposited on Flexible Substrates for Photovoltaic Applications.

    Science.gov (United States)

    Song, Woochang; Lee, Kiwon; Kim, Donguk; Lee, Jaehyeong

    2016-05-01

    Cadmium telluride (CdTe) is a photovoltaic technology based on the use of thin films of CdTe to absorb and convert sunlight into electricity. In this paper, polycrystalline CdTe thin films were deposited using radio frequency magnetron sputtering onto flexible substrates including polyimide and molybdenum foil. The structural and optical properties of the films grown at various sputtering pressures were investigated using X-ray diffraction (XRD), field-emission scanning electron microscope (FE-SEM), and UV/Nis/NIR spectrophotometry. The sputtering pressure was found to have significant effects on the structural properties, including crystallinity, preferential orientation, and microstructure. Deterioration of the optical properties of CdTe thin films were observed at high sputtering pressure.

  10. Tuning of undoped ZnO thin film via plasma enhanced atomic layer deposition and its application for an inverted polymer solar cell

    Directory of Open Access Journals (Sweden)

    Mi-jin Jin

    2013-10-01

    Full Text Available We studied the tuning of structural and optical properties of ZnO thin film and its correlation to the efficiency of inverted solar cell using plasma-enhanced atomic layer deposition (PEALD. The sequential injection of DEZn and O2 plasma was employed for the plasma-enhanced atomic layer deposition of ZnO thin film. As the growth temperature of ZnO film was increased from 100 °C to 300 °C, the crystallinity of ZnO film was improved from amorphous to highly ordered (002 direction ploy-crystal due to self crystallization. Increasing oxygen plasma time in PEALD process also introduces growing of hexagonal wurtzite phase of ZnO nanocrystal. Excess of oxygen plasma time induces enhanced deep level emission band (500 ∼ 700 nm in photoluminescence due to Zn vacancies and other defects. The evolution of structural and optical properties of PEALD ZnO films also involves in change of electrical conductivity by 3 orders of magnitude. The highly tunable PEALD ZnO thin films were employed as the electron conductive layers in inverted polymer solar cells. Our study indicates that both structural and optical properties rather than electrical conductivities of ZnO films play more important role for the effective charge collection in photovoltaic device operation. The ability to tune the materials properties of undoped ZnO films via PEALD should extend their functionality over the wide range of advanced electronic applications.

  11. Preparation and characterization of thin ferromagnetic CrO{sub 2} films for applications in magnetoelectronics

    Energy Technology Data Exchange (ETDEWEB)

    Rabe, M. E-mail: rabe@physik.rwth-aachen.de; Dressen, J.; Dahmen, D.; Pommer, J.; Stahl, H.; Ruediger, U.; Guentherodt, G.; Senz, S.; Hesse, D

    2000-03-01

    The theoretically predicted high spin polarization of half-metallic ferromagnets like CrO{sub 2} and NiMnSb make them to promising materials for magnetoelectronic applications. Highly textured CrO{sub 2} films have been prepared by chemical vapor deposition and molecular beam epitaxy. The temperature-dependent magnetotransport data has been correlated with electronic properties of CrO{sub 2}. Over a wide temperature range (150-330 K) the resistivity follows a T{sup 2} behaviour, consistent with electron-electron scattering. Near the Curie temperature of CrO{sub 2} no metal-insulator transition, a magnetoresistance of -7% (B=9 T) and an enhancement of the resistance due to electron-magnon scattering are observed.

  12. VO2 thin films synthesis for collaborators and various applications.

    Energy Technology Data Exchange (ETDEWEB)

    Johnson, Raegan Lynn [Sandia National Laboratories (SNL-NM), Albuquerque, NM (United States); Clem, Paul G. [Sandia National Laboratories (SNL-NM), Albuquerque, NM (United States)

    2016-11-01

    Vanadium dioxide (VO2) is an attractive material for a variety of applications due to its metal-to-insulator transition (MIT) observed at modest temperatures. This transition takes VO2 from its low temperature insulating monoclinic phase to a high temperature (above 68°C) metallic rutile phase. This transition gives rise to a change in resistivity up to 5 orders of magnitude and a change in complex refractive index (especially at IR wavelengths), which is of interest for radar circuit protection and tunable control of infrared signature. Recently, collaborations have been initiated between CINT scientists and external university programs. The Enhanced Surveillance funds help fund this work which enabled synthesis of VO2 films for several collaborations with internal and external researchers.

  13. Multiferroic oxide thin films and heterostructures

    Science.gov (United States)

    Lu, Chengliang; Hu, Weijin; Tian, Yufeng; Wu, Tom

    2015-06-01

    Multiferroic materials promise a tantalizing perspective of novel applications in next-generation electronic, memory, and energy harvesting technologies, and at the same time they also represent a grand scientific challenge on understanding complex solid state systems with strong correlations between multiple degrees of freedom. In this review, we highlight the opportunities and obstacles in growing multiferroic thin films with chemical and structural integrity and integrating them in functional devices. Besides the magnetoelectric effect, multiferroics exhibit excellent resistant switching and photovoltaic properties, and there are plenty opportunities for them to integrate with other ferromagnetic and superconducting materials. The challenges include, but not limited, defect-related leakage in thin films, weak magnetism, and poor control on interface coupling. Although our focuses are Bi-based perovskites and rare earth manganites, the insights are also applicable to other multiferroic materials. We will also review some examples of multiferroic applications in spintronics, memory, and photovoltaic devices.

  14. Multiferroic oxide thin films and heterostructures

    Energy Technology Data Exchange (ETDEWEB)

    Lu, Chengliang, E-mail: cllu@mail.hust.edu.cn, E-mail: Tao.Wu@kaust.edu.sa [School of Physics and Wuhan National High Magnetic Field Center, Huazhong University of Science and Technology, Wuhan 430074 (China); Hu, Weijin; Wu, Tom, E-mail: cllu@mail.hust.edu.cn, E-mail: Tao.Wu@kaust.edu.sa [Physical Sciences and Engineering Division, King Abdullah University of Science and Technology (KAUST), Thuwal 23955-6900 (Saudi Arabia); Tian, Yufeng [School of Physics, Shandong University, Jinan 250100 (China)

    2015-06-15

    Multiferroic materials promise a tantalizing perspective of novel applications in next-generation electronic, memory, and energy harvesting technologies, and at the same time they also represent a grand scientific challenge on understanding complex solid state systems with strong correlations between multiple degrees of freedom. In this review, we highlight the opportunities and obstacles in growing multiferroic thin films with chemical and structural integrity and integrating them in functional devices. Besides the magnetoelectric effect, multiferroics exhibit excellent resistant switching and photovoltaic properties, and there are plenty opportunities for them to integrate with other ferromagnetic and superconducting materials. The challenges include, but not limited, defect-related leakage in thin films, weak magnetism, and poor control on interface coupling. Although our focuses are Bi-based perovskites and rare earth manganites, the insights are also applicable to other multiferroic materials. We will also review some examples of multiferroic applications in spintronics, memory, and photovoltaic devices.

  15. Multiferroic oxide thin films and heterostructures

    KAUST Repository

    Lu, Chengliang

    2015-05-26

    Multiferroic materials promise a tantalizing perspective of novel applications in next-generation electronic, memory, and energy harvesting technologies, and at the same time they also represent a grand scientific challenge on understanding complex solid state systems with strong correlations between multiple degrees of freedom. In this review, we highlight the opportunities and obstacles in growing multiferroic thin films with chemical and structural integrity and integrating them in functional devices. Besides the magnetoelectric effect, multiferroics exhibit excellent resistant switching and photovoltaic properties, and there are plenty opportunities for them to integrate with other ferromagnetic and superconducting materials. The challenges include, but not limited, defect-related leakage in thin films, weak magnetism, and poor control on interface coupling. Although our focuses are Bi-based perovskites and rare earth manganites, the insights are also applicable to other multiferroic materials. We will also review some examples of multiferroic applications in spintronics, memory, and photovoltaic devices.

  16. Simulation of Thin Film Thermocouple for High Temperature Measurement Applicable to Missiles

    Directory of Open Access Journals (Sweden)

    Manoj Kumar Sonker

    2015-09-01

    Full Text Available Thermocouples have been extensively used for the measurement of temperature since the advent of seebeck effect. Numerous sensors have been developed for temperature measurement, yet measurement of high temperature flowing fluid has been a challenging task. For the measurement of static temperature the measuring device should travel with the fluid at the same speed without disturbing the flow, which is quite unrealistic. So indirect determination of static temperature of flowing fluid is done by using thermocouple exposed into the flowing fluid. Other sensors available for high temperature measurement may lead to problems like resistance in the flow path of fluid which changes the structural dynamics. Thin film thermocouple (TFTC based on W-W26Re for super high temperature measurement has been investigated which can be used in missiles for surface temperature measurement of nozzle and rocket interior surface. TFTC does not cause disruption in the flow path with maintaining structural integrity. The W-W26Re thermocouple offers advantage of higher seebeck coefficient at high temperature i.e. above 750 K, and usability in vacuum, inert and hydrogen atmosphere. Zirconia Fiber has been proposed as insulation protection material over thermocouple. Modelling and simulation of the TFTC for the temperature range 300 K - 2900 K has been presented. FEA model using PDE has been presented to implement heat equation, current balance  quation, Gauss theorem and Neumann boundary condition. The expected voltage production on exposed temperature gradient has been studied.

  17. Thin-film growth and patterning techniques for small molecular organic compounds used in optoelectronic device applications.

    Science.gov (United States)

    Biswas, Shaurjo; Shalev, Olga; Shtein, Max

    2013-01-01

    Rapid advances in research and development in organic electronics have resulted in many exciting discoveries and applications, including organic light-emitting devices for information display and illumination, solar cells, photodetectors, chemosensors, and logic. Organic optoelectronic materials are broadly classified as polymeric or small molecular. For the latter category, solvent-free deposition techniques are generally preferred to form well-defined interfaces and improve device performance. This article reviews several deposition and patterning methods for small molecular thin films and devices, including organic molecular beam deposition, vacuum thermal evaporation, organic vapor phase deposition, and organic vapor jet printing, and compares them to several other methods that have been proposed recently. We hope this review provides a compact but informative summary of the state of the art in organic device processing and addresses the various techniques' governing physical principles.

  18. Mechanisms of Low-Temperature Nitridation Technology on a TaN Thin Film Resistor for Temperature Sensor Applications.

    Science.gov (United States)

    Chen, Huey-Ru; Chen, Ying-Chung; Chang, Ting-Chang; Chang, Kuan-Chang; Tsai, Tsung-Ming; Chu, Tian-Jian; Shih, Chih-Cheng; Chuang, Nai-Chuan; Wang, Kao-Yuan

    2016-12-01

    In this letter, we propose a novel low-temperature nitridation technology on a tantalum nitride (TaN) thin film resistor (TFR) through supercritical carbon dioxide (SCCO2) treatment for temperature sensor applications. We also found that the sensitivity of temperature of the TaN TFR was improved about 10.2 %, which can be demonstrated from measurement of temperature coefficient of resistance (TCR). In order to understand the mechanism of SCCO2 nitridation on the TaN TFR, the carrier conduction mechanism of the device was analyzed through current fitting. The current conduction mechanism of the TaN TFR changes from hopping to a Schottky emission after the low-temperature SCCO2 nitridation treatment. A model of vacancy passivation in TaN grains with nitrogen and by SCCO2 nitridation treatment is eventually proposed to increase the isolation ability in TaN TFR, which causes the transfer of current conduction mechanisms.

  19. Device Process and Circuit Application Interaction for Harsh Electronics: Hf-In-Zn-O Thin Film Transistors as an Example

    KAUST Repository

    Ho, Chih-Hsiang

    2017-06-27

    The effects of Hf content on the radiation hardness of Hf-In-Zn-O thin-film transistors (HIZO TFTs) and HIZO TFTbased circuits are systemically examined. The evaluated circuits, including current-starved ring oscillator, energy harvesting and RF circuits are essential for space electronic systems. It is shown that HIZO TFTs with low Hf concentration have better initial performance while TFTs with high Hf concentration are more stable against radiation. On the other hand, for circuit application, the stable HIZO TFTs are not necessarily preferred for all circuits. The work demonstrates that understanding the device-circuit interactions is necessary for device optimization and circuit reliability improvements for harsh electronic systems.

  20. MISSE 5 Thin Films Space Exposure Experiment

    Science.gov (United States)

    Harvey, Gale A.; Kinard, William H.; Jones, James L.

    2007-01-01

    The Materials International Space Station Experiment (MISSE) is a set of space exposure experiments using the International Space Station (ISS) as the flight platform. MISSE 5 is a co-operative endeavor by NASA-LaRC, United Stated Naval Academy, Naval Center for Space Technology (NCST), NASA-GRC, NASA-MSFC, Boeing, AZ Technology, MURE, and Team Cooperative. The primary experiment is performance measurement and monitoring of high performance solar cells for U.S. Navy research and development. A secondary experiment is the telemetry of this data to ground stations. A third experiment is the measurement of low-Earth-orbit (LEO) low-Sun-exposure space effects on thin film materials. Thin films can provide extremely efficacious thermal control, designation, and propulsion functions in space to name a few applications. Solar ultraviolet radiation and atomic oxygen are major degradation mechanisms in LEO. This paper is an engineering report of the MISSE 5 thm films 13 months space exposure experiment.

  1. Optical and Electrical Properties of the Different Magnetron Sputter Power 300°C Deposited -ZnO Thin Films and Applications in p-i-n -Si:H Thin-Film Solar Cells

    Directory of Open Access Journals (Sweden)

    Fang-Hsing Wang

    2013-01-01

    Full Text Available A compound of ZnO with 3 wt% Ga2O3 (ZnO : Ga2O3 = 97 : 3 in wt%, GZO was sintered at C as a target. The GZO thin films were deposited on glass using a radio frequency magnetron sputtering system at C by changing the deposition power from 50 W to 150 W. The effects of deposition power on the crystallization size, lattice constant (c, resistivity, carrier concentration, carrier mobility, and optical transmission rate of the GZO thin films were studied. The blue shift in the transmission spectrum of the GZO thin films was found to change with the variations of the carrier concentration because of the Burstein-Moss shifting effect. The variations in the optical band gap ( value of the GZO thin films were evaluated from the plots of , revealing that the measured value decreased with increasing deposition power. As compared with the results deposited at room temperature by Gong et al., (2010 the C deposited GZO thin films had apparent blue shift in the transmission spectrum and larger value. For the deposited GZO thin films, both the carrier concentration and mobility linearly decreased and the resistivity linearly increased with increasing deposition power. The prepared GZO thin films were also used as transparent electrodes to fabricate the amorphous silicon thin-film solar cells, and their properties were also measured.

  2. Thin blend films of cellulose and polyacrylonitrile

    Science.gov (United States)

    Lu, Rui; Zhang, Xin; Mao, Yimin; Briber, Robert; Wang, Howard

    Cellulose is the most abundant renewable, biocompatible and biodegradable natural polymer. Cellulose exhibits excellent chemical and mechanical stability, which makes it useful for applications such as construction, filtration, bio-scaffolding and packaging. To further expand the potential applications of cellulose materials, their alloying with synthetic polymers has been investigated. In this study, thin films of cotton linter cellulose (CLC) and polyacrylonitrile (PAN) blends with various compositions spanning the entire range from neat CLC to neat PAN were spun cast on silicon wafers from common solutions in dimethyl sulfoxide / ionic liquid mixtures. The morphologies of thin films were characterized using optical microscopy, atomic force microscopy, scanning electron microscopy and X-ray reflectivity. Morphologies of as-cast films are highly sensitive to the film preparation conditions; they vary from featureless smooth films to self-organized ordered nano-patterns to hierarchical structures spanning over multiple length scales from nanometers to tens of microns. By selectively removing the PAN-rich phase, the structures of blend films were studied to gain insights in their very high stability in hot water, acid and salt solutions.

  3. Atomic Structure Control of Silica Thin Films on Pt(111)

    KAUST Repository

    Crampton, Andrew S

    2015-05-27

    Metal oxide thin films grown on metal single crystals are commonly used to model heterogeneous catalyst supports. The structure and properties of thin silicon dioxide films grown on metal single crystals have only recently been thoroughly characterized and their spectral properties well established. We report the successful growth of a three- dimensional, vitreous silicon dioxide thin film on the Pt(111) surface and reproduce the closed bilayer structure previously reported. The confirmation of the three dimensional nature of the film is unequivocally shown by the infrared absorption band at 1252 cm−1. Temperature programmed desorption was used to show that this three-dimensional thin film covers the Pt(111) surface to such an extent that its application as a catalyst support for clusters/nanoparticles is possible. The growth of a three-dimensional film was seen to be directly correlated with the amount of oxygen present on the surface after the silicon evaporation process. This excess of oxygen is tentatively attributed to atomic oxygen being generated in the evaporator. The identification of atomic oxygen as a necessary building block for the formation of a three-dimensional thin film opens up new possibilities for thin film growth on metal supports, whereby simply changing the type of oxygen enables thin films with different atomic structures to be synthesized. This is a novel approach to tune the synthesis parameters of thin films to grow a specific structure and expands the options for modeling common amorphous silica supports under ultra high vacuum conditions.

  4. Soft Magnetic Thin Films FeCoHfO for High-Frequency Noise Suppression Applications

    Institute of Scientific and Technical Information of China (English)

    LU Guang-Duo; ZHANG Huai-Wu; TANG Xiao-Li

    2010-01-01

    @@ A series of FeCoHfO films were fabricated by dc magnetron reactive sputtering at varying partial pressure of oxygen(Po2)from 0 to 11.7%,and the electrical and magnetic properties of films have been studied.It is shown that optimal Fe43.29 Co19.51 Hf7.49O29.71 films with desired properties can be obtained when the films were prepared under Po2 = 5.1%.

  5. Optical and Morphological Studies of Thermally Evaporated PTCDI-C8 Thin Films for Organic Solar Cell Applications

    Directory of Open Access Journals (Sweden)

    Ronak Rahimi

    2013-01-01

    Full Text Available PTCDI-C8 due to its relatively high photosensitivity and high electron mobility has attracted much attention in organic semiconductor devices. In this work, thin films of PTCDI-C8 with different thicknesses were deposited on silicon substrates with native silicon dioxide using a vacuum thermal evaporator. Several material characterization techniques have been utilized to evaluate the structure, morphology, and optical properties of these films. Their optical constants (refractive index and extinction coefficient have been extracted from the spectroscopic ellipsometry (SE. X-ray reflectivity (XRR and atomic force microscopy (AFM were employed to determine the morphology and structure as well as the thickness and roughness of the PTCDI-C8 thin films. These films revealed a high degree of structural ordering within the layers. All the experimental measurements were performed under ambient conditions. PTCDI-C8 films have shown to endure ambient condition which allows pots-deposition characterization.

  6. An investigation on linear and non-linear optical constants of nano-spherical CuPc thin films for optoelectronic applications

    Energy Technology Data Exchange (ETDEWEB)

    Yahia, I.S. [Nano-Science & Semiconductor Labs, Metallurgical Lab., Department of Physics, Faculty of Education, Ain Shams University, Roxy, Cairo (Egypt); Advanced Functional Materials & Optoelectronic Laboratory (AFMOL), Department of Physics, Faculty of Science, King Khalid University, P.O. Box 9004, Abha (Saudi Arabia); Ganesh, V. [Advanced Functional Materials & Optoelectronic Laboratory (AFMOL), Department of Physics, Faculty of Science, King Khalid University, P.O. Box 9004, Abha (Saudi Arabia); Shkir, M., E-mail: shkirphysics@gmail.com [Advanced Functional Materials & Optoelectronic Laboratory (AFMOL), Department of Physics, Faculty of Science, King Khalid University, P.O. Box 9004, Abha (Saudi Arabia); AlFaify, S. [Advanced Functional Materials & Optoelectronic Laboratory (AFMOL), Department of Physics, Faculty of Science, King Khalid University, P.O. Box 9004, Abha (Saudi Arabia); Zahran, H.Y. [Nano-Science & Semiconductor Labs, Metallurgical Lab., Department of Physics, Faculty of Education, Ain Shams University, Roxy, Cairo (Egypt); Advanced Functional Materials & Optoelectronic Laboratory (AFMOL), Department of Physics, Faculty of Science, King Khalid University, P.O. Box 9004, Abha (Saudi Arabia); Algarni, H. [Advanced Functional Materials & Optoelectronic Laboratory (AFMOL), Department of Physics, Faculty of Science, King Khalid University, P.O. Box 9004, Abha (Saudi Arabia); Abutalib, M.M.; Al-Ghamdi, Attieh A. [Centre of Nanotechnology, Physics Department-Faculty of Science-AL Faisaliah Campus, King Abdulaziz University, Jeddah (Saudi Arabia); El-Naggar, A.M.; AlBassam, A.M. [Research Chair of Exploitation of Renewable Energy Applications in Saudi Arabia, Physics & Astronomy Dept., College of Science, King Saud University, P.O. Box 2455, Riyadh 11451 (Saudi Arabia)

    2016-09-01

    In the current work, the authors present the systematic study on linear and nonlinear optical properties of Copper-phathalocyanine thin film deposited by thermal evaporation system for the first time. The thickness of the prepared thin film was measured and found to be ~300 nm. X-ray diffraction and AFM study confirms that the prepared thin film possess good quality. The orientation of the grown thin film is found to be along (100). UV–vis-NIR study shows that the deposited thin film is highly transparent (>80%) in the wavelength range of 700–2500 nm. Further, the recorded optical data was used to determine the various linear and nonlinear optical parameters. The calculated value of refractive index is found to be in the range of 0.4–1.0. The direct and indirect band gap value is found to be 2.9 and 3.25 eV, respectively. The value of linear and nonlinear susceptibilities is found to be in order of 10{sup −12}. The higher value of linear and nonlinear parameters makes it suitable for optoelectronic applications.

  7. Applicability of X-ray fluorescence spectroscopy as method to determine thickness and composition of stacks of metal thin films: A comparison with imaging and profilometry

    NARCIS (Netherlands)

    Vrielink, J.A.M.; Tiggelaar, R.M.; Gardeniers, J.G.E.; Lefferts, L.

    2012-01-01

    In this work the applicability of X-ray fluorescence spectroscopy (XRF) for fast, accurate and non-destructive determination of the thickness of a variety of single-layer and multi-layer metal thin films deposited on glass and silicon is investigated. Data obtained with XRF is compared with informat

  8. Photonic sintering via flash white light combined with deep UV and NIR for SrTiO3 thin film vibration touch panel applications

    Science.gov (United States)

    Hwang, Hyun-Jun; Lim, Soo-Chul; Ok, Kyung-Chul; Park, Jin-Seong; Kim, Hak-Sung

    2016-12-01

    An ultra-high speed photonic sintering method consisting of flash white light (FWL) combined with near infrared (NIR) and deep UV light irradiations was developed to fabricate a SrTiO3 (STO) thin film for application in electro-vibration touch panels. The STO thin film was sintered on PEN by FWL irradiation at room temperature under ambient conditions, which is a dramatically simple and ultrahigh speed fabrication process compared to the conventional high temperature (600 °C-900 °C) thermal sintering process. The effects of the FWL irradiation conditions (energy density, pulse numbers, and pulse duration) on the dielectric constant of the sintered STO thin films were evaluated. Furthermore, the effects of NIR and deep UV irradiation during the FWL sintering process were also investigated.

  9. Structure, morphology and Raman and optical spectroscopic analysis of In1-xCuxP thin films grown by MOCVD technique for solar cell applications

    Science.gov (United States)

    Alshahrie, Ahmed; Juodkazis, S.; Al-Ghamdi, A. A.; Hafez, M.; Bronstein, L. M.

    2017-10-01

    Nanocrystalline In1-xCuxP thin films (0 ≤ x ≤ 0.5) have been deposited on quartz substrates by a Metal-Organic Chemical Vapor Deposition (MOCVD) technique. The effect of the copper ion content on the structural crystal lattice, morphology and optical behavior of the InP thin films was assessed using X-ray diffraction, scanning electron microscopy, atomic force microscopy, Raman spectroscopy and spectrophotometry. All films exhibited a crystalline cubic zinc blende structure, inferring the solubility of the Cu atoms in the InP crystal structure. The XRD patterns demonstrated that the inclusion of Cu atoms into the InP films forced the nanoparticles in the films to grow along the (1 1 1) direction. The AFM topography showed that the Cu ions reduce the surface roughness of deposited films. The Raman spectra of the deposited films contain the first and second order anti-stoke ΓTO, ΓLO, ΧLO + ΧTO, 2ΓTO, and ΓLO + ΓTO bands which are characteristic of the InP crystalline structure. The intensities of these bands decreased with increasing the content of the Cu atoms in the InP crystals implying the creation of a stacking fault density in the InP crystal structure. The In1-xCuxP thin films have shown high optical transparency of 90%. An increase of the optical band gap from 1.38 eV to 1.6 eV was assigned to the increase of the amount of Cu ions in the InP films. The In0.5Cu0.5P thin film exhibited remarkable optical conductivity with very low dissipation factor which makes it a promising buffer window for solar energy applications.

  10. Synthesis of Neutral SiO/TiO Hydrosol and Its Application as Antireflective Self-Cleaning Thin Film

    Directory of Open Access Journals (Sweden)

    Chiahung Huang

    2012-01-01

    Full Text Available A neutral SiO2/TiO2 composite hydrosol was prepared by a coprecipitation-peptization method using titanium tetrachloride and silicon dioxide hydrosol as precursors. It is not only an antireflective self-cleaning coating material but also an environmental-benign material. Even heated at 700°C for 5 minutes in the tempering process, the as-prepared SiO2/TiO2 thin film still demonstrated antireflection and photocatalytic self-cleaning effect. The SiO2/TiO2 thin film increased near 2% of transmittance; however, the TiO2 thin film decreased 5% of transmittance at least. In addition to antireflection, the SiO2/TiO2 thin film decomposed the surface coated oleic acid under ultraviolet light and showed superhydrophilicity under dark for two days. The SiO2/TiO2 thin film also showed good photocatalytic degradation of methylene blue. With these antireflection, persistent superhydrophilicity, and photocatalytic self-cleaning effects, this prepared neutral SiO2/TiO2 hydrosol would be a good coating material for tempered glass and other building materials.

  11. Room temperature ferroelectricity in continuous croconic acid thin films

    Energy Technology Data Exchange (ETDEWEB)

    Jiang, Xuanyuan; Lu, Haidong; Yin, Yuewei; Ahmadi, Zahra; Costa, Paulo S. [Department of Physics and Astronomy, University of Nebraska, Lincoln, Nebraska 68588 (United States); Zhang, Xiaozhe [Department of Physics and Astronomy, University of Nebraska, Lincoln, Nebraska 68588 (United States); Department of Physics, Xi' an Jiaotong University, Xi' an 710049 (China); Wang, Xiao; Yu, Le; Cheng, Xuemei [Department of Physics, Bryn Mawr College, Bryn Mawr, Pennsylvania 19010 (United States); DiChiara, Anthony D. [Advanced Photon Source, Argonne National Laboratory, Argonne, Illinois 60439 (United States); Gruverman, Alexei, E-mail: alexei-gruverman@unl.edu, E-mail: a.enders@me.com, E-mail: xiaoshan.xu@unl.edu; Enders, Axel, E-mail: alexei-gruverman@unl.edu, E-mail: a.enders@me.com, E-mail: xiaoshan.xu@unl.edu; Xu, Xiaoshan, E-mail: alexei-gruverman@unl.edu, E-mail: a.enders@me.com, E-mail: xiaoshan.xu@unl.edu [Department of Physics and Astronomy, University of Nebraska, Lincoln, Nebraska 68588 (United States); Nebraska Center for Materials and Nanoscience, University of Nebraska, Lincoln, Nebraska 68588 (United States)

    2016-09-05

    Ferroelectricity at room temperature has been demonstrated in nanometer-thin quasi 2D croconic acid thin films, by the polarization hysteresis loop measurements in macroscopic capacitor geometry, along with observation and manipulation of the nanoscale domain structure by piezoresponse force microscopy. The fabrication of continuous thin films of the hydrogen-bonded croconic acid was achieved by the suppression of the thermal decomposition using low evaporation temperatures in high vacuum, combined with growth conditions far from thermal equilibrium. For nominal coverages ≥20 nm, quasi 2D and polycrystalline films, with an average grain size of 50–100 nm and 3.5 nm roughness, can be obtained. Spontaneous ferroelectric domain structures of the thin films have been observed and appear to correlate with the grain patterns. The application of this solvent-free growth protocol may be a key to the development of flexible organic ferroelectric thin films for electronic applications.

  12. Chemical gas sensor application of open-pore mesoporous thin films based on integrated optical polarimetric interferometry.

    Science.gov (United States)

    Qi, Zhi-Mei; Honma, Itaru; Zhou, Haoshen

    2006-02-15

    Chemical gas sensors that employ integrated optical polarimetric interferometry were fabricated by the sol-gel synthesis of transparent mesoporous thin films of TiO2-P2O5 nanocomposite on tapered layers of TiO2 sputtered on tin-diffused glass waveguides. Atomic force microscopy images of the mesoporous thin film clearly show the open pore mouths on the film surface that favor rapid diffusion and adsorption of gas-phase analytes within the entire film. Adsorption of gas and vapor induces changes (Deltan) in the refractive index of the mesoporous thin film that lead to shifts in the phase difference between the fundamental transverse electric and magnetic modes simultaneously excited in the glass waveguide via single-beam incidence. Upon exposure to NH3 gas at concentrations as low as 100 ppb in dry air at room temperature, the sensor exhibits a reversible change in the phase difference with the response and recovery times of less than 60 and 90 s, respectively. It is unexpected that the sensor is unresponsive to either NO2 or C6H6 vapor, leading to a somewhat selective sensitivity to NH3. Determination of Deltan was carried out with a combination of the experimental results and the theoretical calculations. The sensor design represents a novel, effective, and easily accessible approach to mesoporous thin-film-based integrated optical chemical sensors.

  13. AgSbSe{sub 2} and AgSb(S,Se){sub 2} thin films for photovoltaic applications

    Energy Technology Data Exchange (ETDEWEB)

    Garza, J.G. [Facultad de Ingenieria Mecanica y Electrica, Universidad Autonoma de Nuevo Leon, San Nicolas de los Garza, Nuevo Leon (Mexico); Shaji, S. [Facultad de Ingenieria Mecanica y Electrica, Universidad Autonoma de Nuevo Leon, San Nicolas de los Garza, Nuevo Leon (Mexico); Facultad de Ingenieria Mecanica y Electrica, CIIDIT - Universidad Autonoma de Nuevo Leon, Apodaca, Nuevo Leon (Mexico); Rodriguez, A.C.; Das Roy, T.K. [Facultad de Ingenieria Mecanica y Electrica, Universidad Autonoma de Nuevo Leon, San Nicolas de los Garza, Nuevo Leon (Mexico); Krishnan, B., E-mail: kbindu_k@yahoo.com [Facultad de Ingenieria Mecanica y Electrica, Universidad Autonoma de Nuevo Leon, San Nicolas de los Garza, Nuevo Leon (Mexico); Facultad de Ingenieria Mecanica y Electrica, CIIDIT - Universidad Autonoma de Nuevo Leon, Apodaca, Nuevo Leon (Mexico)

    2011-10-01

    Silver antimony selenide (AgSbSe{sub 2}) thin films were prepared by heating sequentially deposited multilayers of antimony sulphide (Sb{sub 2}S{sub 3}), silver selenide (Ag{sub 2}Se), selenium (Se) and silver (Ag). Sb{sub 2}S{sub 3} thin film was prepared from a chemical bath containing SbCl{sub 3} and Na{sub 2}S{sub 2}O{sub 3}, Ag{sub 2}Se from a solution containing AgNO{sub 3} and Na{sub 2}SeSO{sub 3} and Se thin films from an acidified solution of Na{sub 2}SeSO{sub 3}, at room temperature on glass substrates. Ag thin film was deposited by thermal evaporation. The annealing temperature was 350 deg. C in vacuum (10{sup -3} Torr) for 1 h. X-ray diffraction analysis showed that the thin films formed were polycrystalline AgSbSe{sub 2} or AgSb(S,Se){sub 2} depending on selenium content in the precursor films. Morphology and elemental analysis of these films were done using scanning electron microscopy and energy dispersive X-ray spectroscopy. Optical band gap was evaluated from the UV-visible absorption spectra of these films. Electrical characterizations were done using Hall effect and photocurrent measurements. A photovoltaic structure: glass/ITO/CdS/AgSbSe{sub 2}/Al was formed, in which CdS was deposited by chemical bath deposition. J-V characteristics of this structure showed V{sub oc} = 435 mV and J{sub sc} = 0.08 mA/cm{sup 2} under illumination using a tungsten halogen lamp. Preparation of a photovoltaic structure using AgSbSe{sub 2} as an absorber material by a non-toxic selenization process is achieved.

  14. Polycrystalline thin films : A review

    Energy Technology Data Exchange (ETDEWEB)

    Valvoda, V. [Charles Univ., Prague (Czech Republic). Faculty of Mathematics and Physics

    1996-09-01

    Polycrystalline thin films can be described in terms of grain morphology and in terms of their packing by the Thornton`s zone model as a function of temperature of deposition and as a function of energy of deposited atoms. Grain size and preferred grain orientation (texture) can be determined by X-ray diffraction (XRD) methods. A review of XRD analytical methods of texture analysis is given with main attention paid to simple empirical functions used for texture description and for structure analysis by joint texture refinement. To illustrate the methods of detailed structure analysis of thin polycrystalline films, examples of multilayers are used with the aim to show experiments and data evaluation to determine layer thickness, periodicity, interface roughness, lattice spacing, strain and the size of diffraction coherent volumes. The methods of low angle and high angle XRD are described and discussed with respect to their complementary information content.

  15. Thin films of soft matter

    CERN Document Server

    Kalliadasis, Serafim

    2007-01-01

    A detailed overview and comprehensive analysis of the main theoretical and experimental advances on free surface thin film and jet flows of soft matter is given. At the theoretical front the book outlines the basic equations and boundary conditions and the derivation of low-dimensional models for the evolution of the free surface. Such models include long-wave expansions and equations of the boundary layer type and are analyzed via linear stability analysis, weakly nonlinear theories and strongly nonlinear analysis including construction of stationary periodic and solitary wave and similarity solutions. At the experimental front a variety of very recent experimental developments is outlined and the link between theory and experiments is illustrated. Such experiments include spreading drops and bubbles, imbibitions, singularity formation at interfaces and experimental characterization of thin films using atomic force microscopy, ellipsometry and contact angle measurements and analysis of patterns using Minkows...

  16. Flexible superconducting Nb transmission lines on thin film polyimide for quantum computing applications

    Science.gov (United States)

    Tuckerman, David B.; Hamilton, Michael C.; Reilly, David J.; Bai, Rujun; Hernandez, George A.; Hornibrook, John M.; Sellers, John A.; Ellis, Charles D.

    2016-08-01

    We describe progress and initial results achieved towards the goal of developing integrated multi-conductor arrays of shielded controlled-impedance flexible superconducting transmission lines with ultra-miniature cross sections and wide bandwidths (dc to >10 GHz) over meter-scale lengths. Intended primarily for use in future scaled-up quantum computing systems, such flexible thin-film niobium/polyimide ribbon cables could provide a physically compact and ultra-low thermal conductance alternative to the rapidly increasing number of discrete coaxial cables that are currently used by quantum computing experimentalists to transmit signals between the several low-temperature stages (from ˜4 K down to ˜20 mK) of a dilution refrigerator. We have concluded that these structures are technically feasible to fabricate, and so far they have exhibited acceptable thermo-mechanical reliability. S-parameter results are presented for individual 2-metal layer Nb microstrip structures having 50 Ω characteristic impedance; lengths ranging from 50 to 550 mm were successfully fabricated. Solderable pads at the end terminations allowed testing using conventional rf connectors. Weakly coupled open-circuit microstrip resonators provided a sensitive measure of the overall transmission line loss as a function of frequency, temperature, and power. Two common microelectronic-grade polyimide dielectrics, one conventional and the other photo-definable (PI-2611 and HD-4100, respectively) were compared. Our most striking result, not previously reported to our knowledge, was that the dielectric loss tangents of both polyimides, over frequencies from 1 to 20 GHz, are remarkably low at deep cryogenic temperatures, typically 100× smaller than corresponding room temperature values. This enables fairly long-distance (meter-scale) transmission of microwave signals without excessive attenuation, and also permits usefully high rf power levels to be transmitted without creating excessive dielectric

  17. Structural and physical properties of tin oxide thin films for optoelectronic applications

    Science.gov (United States)

    Lin, Su-Shia; Tsai, Yung-Shiang; Bai, Kai-Ren

    2016-09-01

    Tin oxide films were deposited on glass substrates by RF magnetron sputtering. At a lower sputtering pressure, the tin oxide film comprised nanocrystalline orthorhombic SnO with a (110) orientation, greater p-type conductivity and better hydrophobicity. Increasing substrate temperature resulted in the coexistence of nanocrystalline orthorhombic SnO and tetragonal SnO2 in the deposited film, favoring hydrophilicity, changing the p-type conductivity to n-type conductivity, and reducing resistivity. As the sputtering pressure or substrate temperature increased, the tin oxide film exhibited a lower surface roughness, a larger optical energy gap, and higher optical transmission.

  18. Nonlinear optical microscopy for imaging thin films and surfaces

    Energy Technology Data Exchange (ETDEWEB)

    Smilowitz, L.B.; McBranch, D.W.; Robinson, J.M.

    1995-03-01

    We have used the inherent surface sensitivity of second harmonic generation to develop an instrument for nonlinear optical microscopy of surfaces and interfaces. We have demonstrated the use of several nonlinear optical responses for imaging thin films. The second harmonic response of a thin film of C{sub 60} has been used to image patterned films. Two photon absorption light induced fluorescence has been used to image patterned thin films of Rhodamine 6G. Applications of nonlinear optical microscopy include the imaging of charge injection and photoinduced charge transfer between layers in semiconductor heterojunction devices as well as across membranes in biological systems.

  19. Peculiarities of spin reorientation in a thin YIG film.

    Energy Technology Data Exchange (ETDEWEB)

    Bazaliy, Ya. B.; Tsymbal, L. T.; Linnik, A. I.; Dan' shin, N. K.; Izotov, A. I.; Wigen, P. E.

    2002-06-28

    The issue of magnetic orientation transitions in thin films combines interesting physics and importance for applications. We study the magnetic transition and phase diagram of a 0.1{micro}m thick (YLaGd){sub 3}(FeGa){sub 5}O{sub 12} films grown on GGG substrate by liquid phase epitaxy. Observed transitions are compared with those in BiGa:TmIG thin films, studied in previous work by one of the authors. A general picture of orientation transitions in thin films of substituted YIG is discussed.

  20. Peculiarities of spin reorientation in a thin YIG film

    Energy Technology Data Exchange (ETDEWEB)

    Bazaliy, Ya.B.; Tsymbal, L.T.; Linnik, A.I.; Dan' shin, N.K.; Izotov, A.I.; Wigen, P.E

    2003-05-01

    The issue of magnetic orientation transitions in thin films combines interesting physics and importance for applications. We study the magnetic transition and phase diagram of a 0.1 {mu}m thick (YLaGd){sub 3}(FeGa){sub 5}O{sub 12} films grown on GGG substrate by liquid phase epitaxy. Observed transitions are compared with those in BiGa:TmIG thin films, studied in previous work by one of the authors. A general picture of orientation transitions in thin films of substituted YIG is discussed.

  1. Formation of single-walled carbon nanotube thin films enriched with semiconducting nanotubes and their application in photoelectrochemical devices.

    Science.gov (United States)

    Wei, Li; Tezuka, Noriyasu; Umeyama, Tomokazu; Imahori, Hiroshi; Chen, Yuan

    2011-04-01

    Single-walled carbon nanotube (SWCNT) thin films, containing a high-density of semiconducting nanotubes, were obtained by a gel-centrifugation method. The agarose gel concentration and centrifugation force were optimized to achieve high semiconducting and metallic nanotube separation efficiency at 0.1 wt% agarose gel and 18,000g. The thickness of SWCNT films can be precisely controlled from 65 to 260 nm with adjustable transparency. These SWCNT films were applied in photoelectrochemical devices. Photocurrents generated by semiconducting SWCNT enriched films are 15-35% higher than those by unsorted SWCNT films. This is because of reducing exciton recombination channels as a result of the removal of metallic nanotubes. Thinner films generate higher photocurrents because charge carriers have less chances going in metallic nanotubes for recombination, before they can reach electrodes. Developing more scalable and selective methods for high purity semiconducting SWCNTs is important to further improve the photocurrent generation efficiency by using SWCNT-based photoelectrochemical devices.

  2. PbS nanosculptured thin film for phase retarder, anti-reflective, excellent absorber, polarizer and sensor applications.

    Science.gov (United States)

    Chaudhary, Ashok; Klebanov, Matvey; Abdulhalim, Ibrahim

    2015-11-20

    Lead-sulphide (PbS) nanosculptured thin film (nSTF) is prepared using a glancing angle deposition (GLAD) technique and the physical vapour deposition (PVD) process. The morphology of the GLAD films clearly shows that an anisotropic structure is obtained and is composed of micro-sheets with sharp top edges (a few tens of nanometres tip width). Due to this anisotropy, optical birefringence is induced in the nSTF as well as linear dichroism. The structural and optical properties of the PbS nSTF have been characterized by scanning electron microscopy, atomic force microscopy, Raman spectroscopy and transmission measurements. The Raman spectra of PbS nSTF exhibit sharp peaks representative of vibrations in nano-crystalline PbS. Due to the absorption of PbS the nSTF is found to act as a linear polarizer with good extinction and contrast in the near infra-red range. Due to its porosity this nSTF also has the ability to sense fluids, which we demonstrate using ethanol-water solution at different concentrations. The combination of these effects in PbS nSTF is believed to constitute a prime candidate for many desirable device applications in different aspects with the low cost of production in large areas.

  3. Data storage applications based on LiCoO{sub 2} thin films grown on Al{sub 2}O{sub 3} and Si substrates

    Energy Technology Data Exchange (ETDEWEB)

    Svoukis, E., E-mail: svoukis.efthymios@ucy.ac.cy [Nanotechnology Research Unit & Department of Mechanical and Manufacturing Engineering, University of Cyprus, 75 Kallipoleos Av., 1678 Nicosia (Cyprus); Mihailescu, C.N. [Nanotechnology Research Unit & Department of Mechanical and Manufacturing Engineering, University of Cyprus, 75 Kallipoleos Av., 1678 Nicosia (Cyprus); National Institute for Laser, Plasma and Radiation Physics, 409 Atomistilor Street, P.O. Box MG-36, 077125 Magurele (Romania); Mai, V.H. [CEA, LIST, 91191 Gif sur Yvette Cedex (France); Schneegans, O. [Laboratoire Génie Electrique et Electronique de Paris, UMR 8507 of CNRS, UPMC and Paris-Sud Universities, Supélec, 91192 Gif sur Yvette Cedex (France); Breza, K.; Lioutas, C. [Department of Physics, Aristotle University of Thessaloniki, 54124 Thessaloniki (Greece); Giapintzakis, J., E-mail: giapintz@ucy.ac.cy [Nanotechnology Research Unit & Department of Mechanical and Manufacturing Engineering, University of Cyprus, 75 Kallipoleos Av., 1678 Nicosia (Cyprus)

    2016-09-15

    Highlights: • LiCoO{sub 2} thin films are shown to be potential candidates for data storage applications. • High quality LiCoO{sub 2} thin films have been grown by PLD on (0 0 0 1) Al{sub 2}O{sub 3} and (111) Si substrates. • Epitaxial relations have been determined for LiCoO{sub 2}/Al{sub 2}O{sub 3} with high resolution X-ray diffraction (in-plane and out-of-plane configurations). • Surface resistance modification have been obtained by the application of an external bias voltage. • A mechanism for the surface resistance modifications is presented. - Abstract: In this study, LiCoO{sub 2} thin films were investigated for data storage applications based on scanning probe mediated approaches. LiCoO{sub 2}, compared to other materials proposed for scanning probe mediated nanoscale patterning, is highly stable and exhibits reversible electrochemical surface modifications. LiCoO{sub 2} thin films have been grown by pulsed laser deposition on Al{sub 2}O{sub 3} and Si substrates over a range of deposition temperatures. The crystal structure and the microstructure of the films has been inferred through in- and out-of-plane X-ray diffraction studies and high-resolution transmission electron microscopy, respectively. The influence of the film deposition temperature on the surface electrical properties of the LiCoO{sub 2} films is discussed along with the relevant mechanism of surface resistance modification.

  4. A novel synthesis of tin oxide thin films by the sol-gel process for optoelectronic applications

    OpenAIRE

    M. Marikkannan; V. Vishnukanthan; A. Vijayshankar; Mayandi, J.; Pearce, J M

    2015-01-01

    A novel and simple chemical method based on sol-gel processing was proposed to deposit metastable orthorhombic tin oxide (SnOx) thin films on glass substrates at room temperature. The resultant samples are labeled according to the solvents used: ethanol (SnO-EtOH), isopropanol (SnO-IPA) and methanol (SnO-MeOH). The variations in the structural, morphological and optical properties of the thin films deposited using different solvents were characterized by X-ray diffraction, atomic force micros...

  5. A novel fluorinated Eu(III) β-diketone complex as thin film for optical device applications

    Science.gov (United States)

    de Sá, Gilberto F.; Alves, Severino, Jr.; da Silva, Blenio J. P.; da Silva, Eronides F., Jr.

    1998-11-01

    We discuss the synthesis and spectroscopic characteristics of a thin film (˜30-90 nm) based on lanthanide europium (III) complexes as the emitter layers, to shift the UV portion of light spectrum into the visible region. The complex presents high quantum efficiency (˜65%), is highly volatile and thermodynamically stable. In addition, the thin film is used as an alternative antireflection coating on a silicon solar cell, allowing for an improvement of about 21% on cell efficiency. The high absorption and luminescence properties in the UV-visible region and its compatibility with device fabrication processes make this material of great potential for use in advanced optical device technologies.

  6. Cathodoluminescence degradation of PLD thin films

    Science.gov (United States)

    Swart, H. C.; Coetsee, E.; Terblans, J. J.; Ntwaeaborwa, O. M.; Nsimama, P. D.; Dejene, F. B.; Dolo, J. J.

    2010-12-01

    The cathodoluminescence (CL) intensities of Y2SiO5:Ce3+, Gd2O2S:Tb3+ and SrAl2O4:Eu2+,Dy3+ phosphor thin films that were grown by pulsed laser deposition (PLD) were investigated for possible application in low voltage field emission displays (FEDs) and other infrastructure applications. Several process parameters (background gas, laser fluence, base pressure, substrate temperature, etc.) were changed during the deposition of the thin films. Atomic force microscopy (AFM) was used to determine the surface roughness and particle size of the different films. The layers consist of agglomerated nanoparticle structures. Samples with good light emission were selected for the electron degradation studies. Auger electron spectroscopy (AES) and CL spectroscopy were used to monitor changes in the surface chemical composition and luminous efficiency of the thin films. AES and CL spectroscopy were done with 2 keV energy electrons. Measurements were done at 1×10-6 Torr oxygen pressure. The formation of different oxide layers during electron bombardment was confirmed with X-ray photoelectron spectroscopy (XPS). New non-luminescent layers that formed during electron bombardment were responsible for the degradation in light intensity. The adventitious C was removed from the surface in all three cases as volatile gas species, which is consistent with the electron stimulated surface chemical reaction (ESSCR) model. For Y2SiO5:Ce3+ a luminescent SiO2 layer formed during the electron bombardment. Gd2O3 and SrO thin films formed on the surfaces of Gd2O2S:Tb3+ and SrAl2O4:Eu2+,Dy3+, respectively, due to ESSCRs.

  7. Large Area Thin Film Silicon: Synergy between Displays and Solar Cells

    NARCIS (Netherlands)

    Schropp, R.E.I.

    2012-01-01

    Thin-film silicon technology has changed our society, owing to the rapid advance of its two major application fields in communication (thin-film displays) and sustainable energy (thin-film solar cells). Throughout its development, advances in these application fields have always benefitted each othe

  8. CdS quantum dots sensitized Cu doped ZnO nanostructured thin films for solar cell applications

    Science.gov (United States)

    Poornima, K.; Gopala Krishnan, K.; Lalitha, B.; Raja, M.

    2015-07-01

    ZnO nanorods and Cu doped ZnO nanorods thin films have been prepared by simple hydrothermal method. CdS quantum dots are sensitized with Cu doped ZnO nanorod thin films using successive ionic layer adsorption and reaction (SILAR) method. The X-ray diffraction study reveals that ZnO nanorods, and CdS quantum dot sensitized Cu doped ZnO nanorods exhibit hexagonal structure. The scanning electron microscope image shows the presence of ZnO nanorods. The avera